Bi2Sr2CaCu2O8
###Comment on "High Field Quasiparticle Tunneling in Bi_2Sr_2CaCu_2O_{8+δ} : Negative Magnetoresistance in the Superconducting State" (N.Morozov et al, Phys.Rev. Lett. 84,1784 (2000))|V. N. Zavaritsky,M. Springford,A. S. Alexandrov###
(88, 96)
Comment on High Field Quasiparticle Tunneling in Bi2Sr2CaCu2O8  Negative Magnetoresistance in the Superconducting State (N.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.06666666666666667,0,0,0,0,0,0,0,0,0.13333333333333333,0,0,0,0,0,0,0,0,0.13333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 84, ',', 4]

N
###Comment on "High Field Quasiparticle Tunneling in Bi_2Sr_2CaCu_2O_{8+δ} : Negative Magnetoresistance in the Superconducting State" (N.Morozov et al, Phys.Rev. Lett. 84,1784 (2000))|V. N. Zavaritsky,M. Springford,A. S. Alexandrov###
(112, 112)
Comment on High Field Quasiparticle Tunneling in Bi2Sr2CaCu2O8  Negative Magnetoresistance in the Superconducting State (N.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 84, ',', 4]

Pr1.85Ce0.15CuO4
###c-Axis longitudinal magnetoresistance of the electron-doped superconductor Pr1.85Ce0.15CuO4|W. Yu,B. Liang,R. L. Greene###
(197, 203)
c<missing VAR>-Axis longitudinal magnetoresistance of the electron-doped superconductor Pr1.85Ce0.15CuO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.02142857142857143,0.2642857142857143,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pr1.85Ce0.15CuO4
###c-Axis longitudinal magnetoresistance of the electron-doped superconductor Pr1.85Ce0.15CuO4|W. Yu,B. Liang,R. L. Greene###
(229, 235)
 We report c<missing VAR>-axis resistivity and longitudinal magnetoresistance measurementsof superconducting Pr1.85Ce0.15CuO4 single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.02142857142857143,0.2642857142857143,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###c-Axis longitudinal magnetoresistance of the electron-doped superconductor Pr1.85Ce0.15CuO4|W. Yu,B. Liang,R. L. Greene###
(242, 242)
 In the temperature range13K<T<missing VAR><32K, a negative magnetoresistance is observed at fields just above Hc2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###c-Axis longitudinal magnetoresistance of the electron-doped superconductor Pr1.85Ce0.15CuO4|W. Yu,B. Liang,R. L. Greene###
(252, 252)
 In the temperature range13K<T<missing VAR><32K, a negative magnetoresistance is observed at fields just above Hc2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###c-Axis longitudinal magnetoresistance of the electron-doped superconductor Pr1.85Ce0.15CuO4|W. Yu,B. Liang,R. L. Greene###
(257, 257)
 In the temperature range13K<T<missing VAR><32K, a negative magnetoresistance is observed at fields just above Hc2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###c-Axis longitudinal magnetoresistance of the electron-doped superconductor Pr1.85Ce0.15CuO4|W. Yu,B. Liang,R. L. Greene###
(309, 309)
 At lower temperatures (T<missing VAR><13K), a differentmagnetoresistance behavior and a resistivity upturn are observed, whose originis still unknown.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###c-Axis longitudinal magnetoresistance of the electron-doped superconductor Pr1.85Ce0.15CuO4|W. Yu,B. Liang,R. L. Greene###
(319, 319)
 At lower temperatures (T<missing VAR><13K), a differentmagnetoresistance behavior and a resistivity upturn are observed, whose originis still unknown.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/MgO/Si
###Local magnetoresistance in Fe/MgO/Si lateral spin valve at room temperature|Tomoyuki Sasaki,Toshio Suzuki,Yuichiro Ando,Hayato Koike,Tohru Oikawa,Yoshishige Suzuki,Masashi Shiraishi###
(371, 376)
Local magnetoresistance in Fe/MgO/Si lateral spin valve at room temperature.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[40.0, 1.6, 'nm', 2],[99.0, 0.0057, 'ohm', 3]

MgO
###Local magnetoresistance in Fe/MgO/Si lateral spin valve at room temperature|Tomoyuki Sasaki,Toshio Suzuki,Yuichiro Ando,Hayato Koike,Tohru Oikawa,Yoshishige Suzuki,Masashi Shiraishi###
(420, 421)
By employing 1.6 nm-thick MgO tunnel barrier, spin injection efficiency isincreased, resulting in large non-local magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 1.6, 'nm', 0],[54.0, 0.0057, 'ohm', 1]

As
###Local magnetoresistance in Fe/MgO/Si lateral spin valve at room temperature|Tomoyuki Sasaki,Toshio Suzuki,Yuichiro Ando,Hayato Koike,Tohru Oikawa,Yoshishige Suzuki,Masashi Shiraishi###
(485, 485)
As a result, a clear rectangle signal is observed in local magnetoresistancemeasurement even at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 1.6, 'nm', 2],[10.0, 0.0057, 'ohm', 1]

Al/Ge/Al
###Large rectification magnetoresistance in nonmagnetic Al/Ge/Al heterojunctions|Kun Zhang,Huan-huan Li,Peter Grünberg,Qiang Li,Sheng-tao Ye,Yu-feng Tian,Shi-shen Yan,Zhao-jun Lin,Shi-shou Kang,Yan-xue Chen,Guo-lei Liu,Liang-mo Mei###
(579, 583)
Large rectification magnetoresistance in nonmagnetic Al/Ge/Al heterojunctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[200.0, 250, '%', 3],[233.0, 70, '%', 3]

Al/Ge
###Large rectification magnetoresistance in nonmagnetic Al/Ge/Al heterojunctions|Kun Zhang,Huan-huan Li,Peter Grünberg,Qiang Li,Sheng-tao Ye,Yu-feng Tian,Shi-shen Yan,Zhao-jun Lin,Shi-shou Kang,Yan-xue Chen,Guo-lei Liu,Liang-mo Mei###
(703, 705)
 Being different from the well known various magnetoresistance effects,here we report a brand new large magnetoresistance that can be regarded asrectification magnetoresistance the application of a pure small sinusoidalalternating-current to the nonmagnetic Al/Ge Schottky heterojunctions cangenerate a significant direct-current voltage, and this rectification voltagestrongly varies with the external magnetic field.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[78.0, 250, '%', 1],[111.0, 70, '%', 1]

Al/Ge
###Large rectification magnetoresistance in nonmagnetic Al/Ge/Al heterojunctions|Kun Zhang,Huan-huan Li,Peter Grünberg,Qiang Li,Sheng-tao Ye,Yu-feng Tian,Shi-shen Yan,Zhao-jun Lin,Shi-shou Kang,Yan-xue Chen,Guo-lei Liu,Liang-mo Mei###
(766, 768)
 We find that therectification magnetoresistance in Al/Ge Schottky heterojunctions is as largeas 250% at room temperature, which is greatly enhanced as compared with theconventional magnetoresistance of 70%.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[15.0, 250, '%', 0],[48.0, 70, '%', 0]

Ge
###Large rectification magnetoresistance in nonmagnetic Al/Ge/Al heterojunctions|Kun Zhang,Huan-huan Li,Peter Grünberg,Qiang Li,Sheng-tao Ye,Yu-feng Tian,Shi-shen Yan,Zhao-jun Lin,Shi-shou Kang,Yan-xue Chen,Guo-lei Liu,Liang-mo Mei###
(845, 845)
 The findings of rectificationmagnetoresistance open the way to the new nonmagnetic Ge-based spintronicsdevices of large rectification magnetoresistance at ambient temperature underthe alternating-current due to the simultaneous implementation of therectification and magnetoresistance in the same devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 250, '%', 1],[29.0, 70, '%', 1]

GaAs/AlGaAs
###Non-monotonic magnetic field and density dependence of in-plane magnetoresistance in dilute two-dimensional holes in GaAs/AlGaAs|H. Noh,Jongsoo Yoon,D. C. Tsui,M. Shayegan###
(949, 954)
Non-monotonic magnetic field and density dependence of in-plane magnetoresistance in dilute two-dimensional holes in GaAs/AlGaAs.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[137.0, 0, ',', 3]

K
###Non-monotonic magnetic field and density dependence of in-plane magnetoresistance in dilute two-dimensional holes in GaAs/AlGaAs|H. Noh,Jongsoo Yoon,D. C. Tsui,M. Shayegan###
(969, 969)
 We studied low temperature (T50mK) in-plane magnetoresistance of a dilutetwo-dimensional hole system in GaAs/AlGaAs heterostructure that exhibits anapparent metal-insulator transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 0, ',', 2]

GaAs/AlGaAs
###Non-monotonic magnetic field and density dependence of in-plane magnetoresistance in dilute two-dimensional holes in GaAs/AlGaAs|H. Noh,Jongsoo Yoon,D. C. Tsui,M. Shayegan###
(995, 1000)
 We studied low temperature (T50mK) in-plane magnetoresistance of a dilutetwo-dimensional hole system in GaAs/AlGaAs heterostructure that exhibits anapparent metal-insulator transition.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[91.0, 0, ',', 2]

B
###Non-monotonic magnetic field and density dependence of in-plane magnetoresistance in dilute two-dimensional holes in GaAs/AlGaAs|H. Noh,Jongsoo Yoon,D. C. Tsui,M. Shayegan###
(1049, 1049)
 We found an anisotropic magnetoresistance,which changes dramatically at high in-plane fields (Bparallelagt5T) asthe hole density is varied.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 0, ',', 1]

At
###Non-monotonic magnetic field and density dependence of in-plane magnetoresistance in dilute two-dimensional holes in GaAs/AlGaAs|H. Noh,Jongsoo Yoon,D. C. Tsui,M. Shayegan###
(1070, 1070)
 At high densities where the system behaves metallicat Bparallel0, the transverse magnetoresistance is larger than thelongitudinal magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 0, ',', 0]

B
###Non-monotonic magnetic field and density dependence of in-plane magnetoresistance in dilute two-dimensional holes in GaAs/AlGaAs|H. Noh,Jongsoo Yoon,D. C. Tsui,M. Shayegan###
(1089, 1089)
 At high densities where the system behaves metallicat Bparallel0, the transverse magnetoresistance is larger than thelongitudinal magnetoresistance.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 0, ',', 0]

Fe
###Tunneling magnetoresistance in ensembles of ferromagnetic granules with exchange interaction and random easy axes of magnetic anisotropy|Y. M. Beltukov,V. I. Kozub,A. V. Shumilin,N. P. Stepina###
(1409, 1409)
 Our theory agrees with measurements ofmagnetoresistance in ensembles of Fe granules in SiCxNy matrix.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Tunneling magnetoresistance in ensembles of ferromagnetic granules with exchange interaction and random easy axes of magnetic anisotropy|Y. M. Beltukov,V. I. Kozub,A. V. Shumilin,N. P. Stepina###
(1415, 1415)
 Our theory agrees with measurements ofmagnetoresistance in ensembles of Fe granules in SiCxNy matrix.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cd3As2
###Negative magnetoresistance due to conductivity fluctuations in films of the topological semimetal Cd3As2|Timo Schumann,Manik Goyal,David A. Kealhofer,Susanne Stemmer###
(1454, 1457)
Negative magnetoresistance due to conductivity fluctuations in films of the topological semimetal Cd3As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cd3As2
###Negative magnetoresistance due to conductivity fluctuations in films of the topological semimetal Cd3As2|Timo Schumann,Manik Goyal,David A. Kealhofer,Susanne Stemmer###
(1606, 1609)
 Here, we reporton magnetotransport measurements performed on epitaxial thin films of Cd3As2, athree-dimensional Dirac semimetal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Comment on: Weak Anisotropy and Disorder Dependence of the In-Plane Magnetoresistance in High-Mobility (100) Si Inversion Layers|V. T. Dolgopolov,A. Gold###
(1962, 1962)
Comment on Weak Anisotropy and Disorder Dependence of the In-Plane Magnetoresistance in High-Mobility (100) Si Inversion Layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Comment on: Weak Anisotropy and Disorder Dependence of the In-Plane Magnetoresistance in High-Mobility (100) Si Inversion Layers|V. T. Dolgopolov,A. Gold###
(1978, 1978)
Comment on Weak Anisotropy and Disorder Dependence of the In-Plane Magnetoresistance in High-Mobility (100) Si Inversion Layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Comment on: Weak Anisotropy and Disorder Dependence of the In-Plane Magnetoresistance in High-Mobility (100) Si Inversion Layers|V. T. Dolgopolov,A. Gold###
(2003, 2003)
 Comment on Weak Anisotropy and Disorder Dependence of the In-PlaneMagnetoresistance in High-Mobility (100) Si Inversion Layers<missing PERIOD>
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Comment on: Weak Anisotropy and Disorder Dependence of the In-Plane Magnetoresistance in High-Mobility (100) Si Inversion Layers|V. T. Dolgopolov,A. Gold###
(2020, 2020)
 Comment on Weak Anisotropy and Disorder Dependence of the In-PlaneMagnetoresistance in High-Mobility (100) Si Inversion Layers<missing PERIOD>
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###The Influence of Magnetic Domain Walls on Longitudinal and Transverse Magnetoresistance in Tensile Strained (Ga,Mn)As Epilayers|G. Xiang,N. Samarth###
(2264, 2264)
The Influence of Magnetic Domain Walls on Longitudinal and Transverse Magnetoresistance in Tensile Strained (Ga,Mn)As Epilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###The Influence of Magnetic Domain Walls on Longitudinal and Transverse Magnetoresistance in Tensile Strained (Ga,Mn)As Epilayers|G. Xiang,N. Samarth###
(2266, 2266)
The Influence of Magnetic Domain Walls on Longitudinal and Transverse Magnetoresistance in Tensile Strained (Ga,Mn)As Epilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###The Influence of Magnetic Domain Walls on Longitudinal and Transverse Magnetoresistance in Tensile Strained (Ga,Mn)As Epilayers|G. Xiang,N. Samarth###
(2268, 2268)
The Influence of Magnetic Domain Walls on Longitudinal and Transverse Magnetoresistance in Tensile Strained (Ga,Mn)As Epilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###The Influence of Magnetic Domain Walls on Longitudinal and Transverse Magnetoresistance in Tensile Strained (Ga,Mn)As Epilayers|G. Xiang,N. Samarth###
(2299, 2299)
 We present a theoretical analysis of recent experimental measurements ofmagnetoresistance in (Ga,Mn)As epilayers with perpendicular magneticanisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###The Influence of Magnetic Domain Walls on Longitudinal and Transverse Magnetoresistance in Tensile Strained (Ga,Mn)As Epilayers|G. Xiang,N. Samarth###
(2301, 2301)
 We present a theoretical analysis of recent experimental measurements ofmagnetoresistance in (Ga,Mn)As epilayers with perpendicular magneticanisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###The Influence of Magnetic Domain Walls on Longitudinal and Transverse Magnetoresistance in Tensile Strained (Ga,Mn)As Epilayers|G. Xiang,N. Samarth###
(2303, 2303)
 We present a theoretical analysis of recent experimental measurements ofmagnetoresistance in (Ga,Mn)As epilayers with perpendicular magneticanisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

DyNiBi
###Giant magnetoresistance and extraordinary magnetoresistance in inhomogeneous semiconducting DyNiBi|Frederick Casper,Claudia Felser###
(2461, 2463)
Giant magnetoresistance and extraordinary magnetoresistance in inhomogeneous semiconducting DyNiBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 200, 'K', 1]

DyNiBi
###Giant magnetoresistance and extraordinary magnetoresistance in inhomogeneous semiconducting DyNiBi|Frederick Casper,Claudia Felser###
(2476, 2478)
 The semiconducting half-Heulser compound DyNiBi shows a negative giantmagnetoresistance (GMR) below 200 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 200, 'K', 0]

At
###Giant magnetoresistance and extraordinary magnetoresistance in inhomogeneous semiconducting DyNiBi|Frederick Casper,Claudia Felser###
(2560, 2560)
 At lowtemperature, a positive magnetoresistance is found, which can be suppressed byhigh fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 200, 'K', 2]

In
###Magnetoresistance in a High Mobility Two-Dimensional Electron Gas|L. Bockhorn,P. Barthold,D. Schuh,W. Wegscheider,R. J. Haug###
(2652, 2652)
 In a high mobility two-dimensional electron gas (2DEG) in a GaAs/AlGaAsquantum well we observe a strong magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 300, '%', 1]

GaAs/AlGaAs
###Magnetoresistance in a High Mobility Two-Dimensional Electron Gas|L. Bockhorn,P. Barthold,D. Schuh,W. Wegscheider,R. J. Haug###
(2679, 2684)
 In a high mobility two-dimensional electron gas (2DEG) in a GaAs/AlGaAsquantum well we observe a strong magnetoresistance.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[52.0, 300, '%', 1]

In
###Magnetoresistance in a High Mobility Two-Dimensional Electron Gas|L. Bockhorn,P. Barthold,D. Schuh,W. Wegscheider,R. J. Haug###
(2702, 2702)
 In lowering the electrondensity the magnetoresistance gets more pronounced and reaches values of morethan 300%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 300, '%', 0]

GaAs/MnAs
###Measurement and simulation of anisotropic magnetoresistance in single GaAs/MnAs core/shell nanowires|J. Liang,J. Wang,A. Paul,B. J. Cooley,D. W. Rench,N. S. Dellas,S. E. Mohney,R. Engel-Herbert,N. Samarth###
(2833, 2837)
Measurement and simulation of anisotropic magnetoresistance in single GaAs/MnAs core/shell nanowires.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

GaAs/MnAs
###Measurement and simulation of anisotropic magnetoresistance in single GaAs/MnAs core/shell nanowires|J. Liang,J. Wang,A. Paul,B. J. Cooley,D. W. Rench,N. S. Dellas,S. E. Mohney,R. Engel-Herbert,N. Samarth###
(2875, 2879)
 We report four probe measurements of the low field magnetoresistance insingle core/shell GaAs/MnAs nanowires synthesized by molecular beam epitaxy,demonstrating clear signatures of anisotropic magnetoresistance that track thefield-dependent magnetization.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

GaAs
###Measurement and simulation of anisotropic magnetoresistance in single GaAs/MnAs core/shell nanowires|J. Liang,J. Wang,A. Paul,B. J. Cooley,D. W. Rench,N. S. Dellas,S. E. Mohney,R. Engel-Herbert,N. Samarth###
(2975, 2976)
 A comparison with micromagnetic simulationsreveals that the principal characteristics of the magnetoresistance data can beunambiguously attributed to the nanowire segments with a zinc blende GaAs core.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###The level shifting induced negative magnetoresistance in the nearest-neighbor hopping conduction|X. R. Wang,S. C. Ma,X. C. Xie###
(3142, 3142)
 At a small separationwe find a negative magnetoresistance at low temperatures and it changes over toa positive value as temperature increases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 80, '%', 2]

Tc
###Chemical Tuning of Positive and Negative Magnetoresistances, and Superconductivity in 1222-type Ruthenocuprates|A. C. Mclaughlin,L. Begg,C. Harrow,S. A. J. Kimber,F. Sher,J. P. Attfield###
(3339, 3339)
 High-Tc materials have applications such assuperconducting magnets for MRI and NMR, and magnetoresistive materials mayfind use in magnetic sensors and spintronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Chemical Tuning of Positive and Negative Magnetoresistances, and Superconductivity in 1222-type Ruthenocuprates|A. C. Mclaughlin,L. Begg,C. Harrow,S. A. J. Kimber,F. Sher,J. P. Attfield###
(3360, 3360)
 High-Tc materials have applications such assuperconducting magnets for MRI and NMR, and magnetoresistive materials mayfind use in magnetic sensors and spintronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Chemical Tuning of Positive and Negative Magnetoresistances, and Superconductivity in 1222-type Ruthenocuprates|A. C. Mclaughlin,L. Begg,C. Harrow,S. A. J. Kimber,F. Sher,J. P. Attfield###
(3364, 3364)
 High-Tc materials have applications such assuperconducting magnets for MRI and NMR, and magnetoresistive materials mayfind use in magnetic sensors and spintronic devices.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr2
###Chemical Tuning of Positive and Negative Magnetoresistances, and Superconductivity in 1222-type Ruthenocuprates|A. C. Mclaughlin,L. Begg,C. Harrow,S. A. J. Kimber,F. Sher,J. P. Attfield###
(3411, 3412)
 Here we report chemicaldoping studies of RuSr2(R<missing VAR>2-x<missing VAR>Cex)Cu2O10-d ruthenocuprates which show that asingle oxide system can be tuned between superconductivity at high hole dopingsand varied magnetoresistive properties at low doping levels.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu2O10-d
###Chemical Tuning of Positive and Negative Magnetoresistances, and Superconductivity in 1222-type Ruthenocuprates|A. C. Mclaughlin,L. Begg,C. Harrow,S. A. J. Kimber,F. Sher,J. P. Attfield###
(3420, 3425)
 Here we report chemicaldoping studies of RuSr2(R<missing VAR>2-x<missing VAR>Cex)Cu2O10-d ruthenocuprates which show that asingle oxide system can be tuned between superconductivity at high hole dopingsand varied magnetoresistive properties at low doping levels.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

RuSr2
###Chemical Tuning of Positive and Negative Magnetoresistances, and Superconductivity in 1222-type Ruthenocuprates|A. C. Mclaughlin,L. Begg,C. Harrow,S. A. J. Kimber,F. Sher,J. P. Attfield###
(3508, 3510)
 A robust variationof negative magnetoresistance with hole concentration is found in theRuSr2R<missing VAR>1.8-x<missing VAR>Y0.2CexCu2O10-d series, while RuSr2R<missing VAR>1.1Ce0.9Cu2O10-d materials showan unprecedented crossover from negative to positive magnetoresistance withrare earth (R) ion radius.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Y0.2
###Chemical Tuning of Positive and Negative Magnetoresistances, and Superconductivity in 1222-type Ruthenocuprates|A. C. Mclaughlin,L. Begg,C. Harrow,S. A. J. Kimber,F. Sher,J. P. Attfield###
(3515, 3516)
 A robust variationof negative magnetoresistance with hole concentration is found in theRuSr2R<missing VAR>1.8-x<missing VAR>Y0.2CexCu2O10-d series, while RuSr2R<missing VAR>1.1Ce0.9Cu2O10-d materials showan unprecedented crossover from negative to positive magnetoresistance withrare earth (R) ion radius.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu2O10-d
###Chemical Tuning of Positive and Negative Magnetoresistances, and Superconductivity in 1222-type Ruthenocuprates|A. C. Mclaughlin,L. Begg,C. Harrow,S. A. J. Kimber,F. Sher,J. P. Attfield###
(3518, 3523)
 A robust variationof negative magnetoresistance with hole concentration is found in theRuSr2R<missing VAR>1.8-x<missing VAR>Y0.2CexCu2O10-d series, while RuSr2R<missing VAR>1.1Ce0.9Cu2O10-d materials showan unprecedented crossover from negative to positive magnetoresistance withrare earth (R) ion radius.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

RuSr2
###Chemical Tuning of Positive and Negative Magnetoresistances, and Superconductivity in 1222-type Ruthenocuprates|A. C. Mclaughlin,L. Begg,C. Harrow,S. A. J. Kimber,F. Sher,J. P. Attfield###
(3530, 3532)
 A robust variationof negative magnetoresistance with hole concentration is found in theRuSr2R<missing VAR>1.8-x<missing VAR>Y0.2CexCu2O10-d series, while RuSr2R<missing VAR>1.1Ce0.9Cu2O10-d materials showan unprecedented crossover from negative to positive magnetoresistance withrare earth (R) ion radius.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ce0.9Cu2O10-d
###Chemical Tuning of Positive and Negative Magnetoresistances, and Superconductivity in 1222-type Ruthenocuprates|A. C. Mclaughlin,L. Begg,C. Harrow,S. A. J. Kimber,F. Sher,J. P. Attfield###
(3535, 3542)
 A robust variationof negative magnetoresistance with hole concentration is found in theRuSr2R<missing VAR>1.8-x<missing VAR>Y0.2CexCu2O10-d series, while RuSr2R<missing VAR>1.1Ce0.9Cu2O10-d materials showan unprecedented crossover from negative to positive magnetoresistance withrare earth (R) ion radius.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

WTe2
###The Effect of Dopants on the Magnetoresistance of WTe2|Steven Flynn,Mazhar Ali,R. J. Cava###
(4094, 4096)
The Effect of Dopants on the Magnetoresistance of WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 1, '%', 3],[131.0, 1.2, 'with', 3]

WTe2
###The Effect of Dopants on the Magnetoresistance of WTe2|Steven Flynn,Mazhar Ali,R. J. Cava###
(4120, 4122)
 Elucidating the nature of the large, non-saturating magnetoresistance in WTe2is a significant step in functionalizing this phenomenon for applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 1, '%', 2],[105.0, 1.2, 'with', 2]

Mo
###The Effect of Dopants on the Magnetoresistance of WTe2|Steven Flynn,Mazhar Ali,R. J. Cava###
(4150, 4150)
Here, Mo, Re, and Ta doped WTe2 are compared to determine whether isovalent andaliovalent substitutions have different effects on the large magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 1, '%', 1],[77.0, 1.2, 'with', 1]

Re
###The Effect of Dopants on the Magnetoresistance of WTe2|Steven Flynn,Mazhar Ali,R. J. Cava###
(4153, 4153)
Here, Mo, Re, and Ta doped WTe2 are compared to determine whether isovalent andaliovalent substitutions have different effects on the large magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 1, '%', 1],[74.0, 1.2, 'with', 1]

Ta
###The Effect of Dopants on the Magnetoresistance of WTe2|Steven Flynn,Mazhar Ali,R. J. Cava###
(4158, 4158)
Here, Mo, Re, and Ta doped WTe2 are compared to determine whether isovalent andaliovalent substitutions have different effects on the large magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 1, '%', 1],[69.0, 1.2, 'with', 1]

WTe2
###The Effect of Dopants on the Magnetoresistance of WTe2|Steven Flynn,Mazhar Ali,R. J. Cava###
(4162, 4164)
Here, Mo, Re, and Ta doped WTe2 are compared to determine whether isovalent andaliovalent substitutions have different effects on the large magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 1, '%', 1],[63.0, 1.2, 'with', 1]

WTe2
###The Effect of Dopants on the Magnetoresistance of WTe2|Steven Flynn,Mazhar Ali,R. J. Cava###
(4325, 4327)
The apparent increased sensitivity of the magnetoresistive effect to aliovalentdoping over simple isoelectronic disorder supports the conclusion that thelarge magnetoresistance in WTe2 arises from interactions between balanced holeand electron populations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 1, '%', 1],[98.0, 1.2, 'with', 1]

SrZnSb2
###Large linear magnetoresistance and magnetothermopower in layered SrZnSb$_2$|Kefeng Wang,C. Petrovic###
(4611, 4614)
Large linear magnetoresistance and magnetothermopower in layered SrZnSb2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 300, '%', 1],[22.0, 9, 'T', 1]

K
###Large linear magnetoresistance and magnetothermopower in layered SrZnSb$_2$|Kefeng Wang,C. Petrovic###
(4645, 4645)
 We report the large linear magnetoresistance (sim 300% in 9 T field at 2K) and magnetothermopower in layered SrZnSb2 crystal withquasi-two-dimensional Sb layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 300, '%', 0],[9.0, 9, 'T', 0]

SrZnSb2
###Large linear magnetoresistance and magnetothermopower in layered SrZnSb$_2$|Kefeng Wang,C. Petrovic###
(4656, 4659)
 We report the large linear magnetoresistance (sim 300% in 9 T field at 2K) and magnetothermopower in layered SrZnSb2 crystal withquasi-two-dimensional Sb layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 300, '%', 0],[20.0, 9, 'T', 0]

Sb
###Large linear magnetoresistance and magnetothermopower in layered SrZnSb$_2$|Kefeng Wang,C. Petrovic###
(4672, 4672)
 We report the large linear magnetoresistance (sim 300% in 9 T field at 2K) and magnetothermopower in layered SrZnSb2 crystal withquasi-two-dimensional Sb layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 300, '%', 0],[36.0, 9, 'T', 0]

(SOC)
###Rashba-Edelstein Magnetoresistance in Metallic Heterostructure|Hiroyasu Nakayama,Yusuke Kanno,Hongyu An,Takaharu Tashiro,Satoshi Haku,Akiyo Nomura,Kazuya Ando###
(4857, 4861)
 We report the observation of magnetoresistance originating from Rashbaspin-orbit coupling (SOC) in a metallic heterostructure the Rashba-Edelstein(RE) magnetoresistance.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi/Ag/CoFeB
###Rashba-Edelstein Magnetoresistance in Metallic Heterostructure|Hiroyasu Nakayama,Yusuke Kanno,Hongyu An,Takaharu Tashiro,Satoshi Haku,Akiyo Nomura,Kazuya Ando###
(4918, 4924)
 We show that the simultaneous action of the direct andinverse RE effects in a Bi/Ag/CoFeB trilayer couples current-induced spinaccumulation to the electric resistance.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

SOC
###Rashba-Edelstein Magnetoresistance in Metallic Heterostructure|Hiroyasu Nakayama,Yusuke Kanno,Hongyu An,Takaharu Tashiro,Satoshi Haku,Akiyo Nomura,Kazuya Ando###
(4992, 4994)
 The electric resistance changes withthe magnetic-field angle, reminiscent of the spin Hall magnetoresistance,despite the fact that bulk SOC is not responsible for the magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe3Sn2
###Robust magnetotransport in disordered ferromagnetic kagome layers with quantum anomalous Hall effect|Koji Kobayashi,Masaki Takagaki,Kentaro Nomura###
(5175, 5178)
Fe3Sn2, Co3Sn2S2, and Mn3Sn), which show the quantumanomalous Hall effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co3Sn2S2
###Robust magnetotransport in disordered ferromagnetic kagome layers with quantum anomalous Hall effect|Koji Kobayashi,Masaki Takagaki,Kentaro Nomura###
(5181, 5186)
Fe3Sn2, Co3Sn2S2, and Mn3Sn), which show the quantumanomalous Hall effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sn
###Robust magnetotransport in disordered ferromagnetic kagome layers with quantum anomalous Hall effect|Koji Kobayashi,Masaki Takagaki,Kentaro Nomura###
(5193, 5193)
Fe3Sn2, Co3Sn2S2, and Mn3Sn), which show the quantumanomalous Hall effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Spin-induced anomalous magnetoresistance at the (100) surface of hydrogen-terminated diamond|Yamaguchi Takahide,Yosuke Sasama,Masashi Tanaka,Hiroyuki Takeya,Yoshihiko Takano,Taisuke Kageura,Hiroshi Kawarada###
(5430, 5430)
 Unexpectedly, theobserved magnetoresistance is positive within the range of 2<T<missing VAR><10 K and -7<B<7T<missing VAR>, in striking contrast to the negative magnetoresistance previously detectedfor similar devices with (111)-oriented diamond surfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 2, '<', 0],[4.0, -7, '<', 0]

B
###Spin-induced anomalous magnetoresistance at the (100) surface of hydrogen-terminated diamond|Yamaguchi Takahide,Yosuke Sasama,Masashi Tanaka,Hiroyuki Takeya,Yoshihiko Takano,Taisuke Kageura,Hiroshi Kawarada###
(5437, 5437)
 Unexpectedly, theobserved magnetoresistance is positive within the range of 2<T<missing VAR><10 K and -7<B<7T<missing VAR>, in striking contrast to the negative magnetoresistance previously detectedfor similar devices with (111)-oriented diamond surfaces.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 2, '<', 0],[3.0, -7, '<', 0]

(B)
###Spin-induced anomalous magnetoresistance at the (100) surface of hydrogen-terminated diamond|Yamaguchi Takahide,Yosuke Sasama,Masashi Tanaka,Hiroyuki Takeya,Yoshihiko Takano,Taisuke Kageura,Hiroshi Kawarada###
(5577, 5579)
 Furthermore we find1) magnetoresistance is orders of magnitude larger than that of the classicalorbital magnetoresistance; 2) magnetoresistance is nearly independent of thedirection of the applied magnetic field; 3) for the in-plane field, themagnetoresistance ratio defined as [rho(B)-rho(0)]/rho(0) follows a universalfunction of B/T<missing VAR>.
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 2, '<', 1],[143.0, -7, '<', 1]

B
###Spin-induced anomalous magnetoresistance at the (100) surface of hydrogen-terminated diamond|Yamaguchi Takahide,Yosuke Sasama,Masashi Tanaka,Hiroyuki Takeya,Yoshihiko Takano,Taisuke Kageura,Hiroshi Kawarada###
(5603, 5603)
 Furthermore we find1) magnetoresistance is orders of magnitude larger than that of the classicalorbital magnetoresistance; 2) magnetoresistance is nearly independent of thedirection of the applied magnetic field; 3) for the in-plane field, themagnetoresistance ratio defined as [rho(B)-rho(0)]/rho(0) follows a universalfunction of B/T<missing VAR>.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 2, '<', 1],[169.0, -7, '<', 1]

In
###Extremely large magnetoresistance in few-layer graphene/boron-nitride heterostructures|Kalon Gopinadhan,Young Jun Shin,Rashid Jalil,Thirumalai Venkatesan,Andre K. Geim,Antonio H. Castro Neto,Hyunsoo Yang###
(6306, 6306)
 In addition, ourresults demonstrate that graphene heterostructures may be promising formagnetic field sensing applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[176.0, 2, ',', 3],[174.0, 0, '%', 3],[170.0, 400, 'K', 3],[153.0, 90, ',', 3],[151.0, 0, '%', 3],[147.0, 9, 'T', 3],[144.0, 300, 'K', 3]

In
###Impurity and dispersion effects on the linear magnetoresistance in the quantum limit|Shuai Li,Hai-Zhou Lu,X. C. Xie###
(6444, 6444)
 In thequantum limit where only the lowest Landau band is occupied, a quantum linearmagnetoresistance was believed to be the signature of the Weyl fermions with 3Dlinear dispersion.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 3, 'D', 0]

Ta/YI
###Investigation of Magnetic Proximity Effect inTa/YIG Bilayer Hall Bar Structure|Yumeng Yang,Baolei Wu,Kui Yao,Santiranjan Shannigrahi,Baoyu Zong,Yihong Wu###
(6782, 6785)
Investigation of Magnetic Proximity Effect inTa/YIG<missing VAR> Bilayer Hall Bar Structure.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[205.0, 4, 'K', 4]

In
###Investigation of Magnetic Proximity Effect inTa/YIG Bilayer Hall Bar Structure|Yumeng Yang,Baolei Wu,Kui Yao,Santiranjan Shannigrahi,Baoyu Zong,Yihong Wu###
(6797, 6797)
 In this work, the investigation of magnetic proximity effect was extended toTa which has been reported to have a negative spin Hall angle.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[193.0, 4, 'K', 3]

Ta
###Investigation of Magnetic Proximity Effect inTa/YIG Bilayer Hall Bar Structure|Yumeng Yang,Baolei Wu,Kui Yao,Santiranjan Shannigrahi,Baoyu Zong,Yihong Wu###
(6823, 6823)
 In this work, the investigation of magnetic proximity effect was extended toTa which has been reported to have a negative spin Hall angle.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 4, 'K', 3]

Pt/YI
###Investigation of Magnetic Proximity Effect inTa/YIG Bilayer Hall Bar Structure|Yumeng Yang,Baolei Wu,Kui Yao,Santiranjan Shannigrahi,Baoyu Zong,Yihong Wu###
(6938, 6941)
 The size of the MRratio observed (10-5) and its magnetization direction dependence are similarto that reported in Pt/YIG<missing VAR>, both of which can be explained by the spin Hallmagnetoresistance theory.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[49.0, 4, 'K', 1]

CrAs
###Quasilinear quantum magnetoresistance in pressure-induced nonsymmorphic superconductor CrAs|Q. Niu,W. C. Yu,K. Y. Yip,Z. L. Lim,H. Kotegawa,E. Matsuoka,H. Sugawara,H. Tou,Y. Yanase,Swee K. Goh###
(7105, 7106)
Quasilinear quantum magnetoresistance in pressure-induced nonsymmorphic superconductor CrAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[256.0, 14, 'T', 6]

In
###Quasilinear quantum magnetoresistance in pressure-induced nonsymmorphic superconductor CrAs|Q. Niu,W. C. Yu,K. Y. Yip,Z. L. Lim,H. Kotegawa,E. Matsuoka,H. Sugawara,H. Tou,Y. Yanase,Swee K. Goh###
(7109, 7109)
 In conventional metals, modification of electron trajectories under magneticfield gives rise to a magnetoresistance that varies quadratically at low field,followed by a saturation at high field for closed orbits on the Fermi surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[253.0, 14, 'T', 5]

CrAs
###Quasilinear quantum magnetoresistance in pressure-induced nonsymmorphic superconductor CrAs|Q. Niu,W. C. Yu,K. Y. Yip,Z. L. Lim,H. Kotegawa,E. Matsuoka,H. Sugawara,H. Tou,Y. Yanase,Swee K. Goh###
(7295, 7296)
 The strongly correlated helimagnet CrAsundergoes a quantum phase transition to a nonmagnetic superconductor underpressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 14, 'T', 1]

B
###Intrinsic Magnetoresistance in Three-Dimensional Dirac Materials|Huan-Wen Wang,Bo Fu,Shun-Qing Shen###
(7542, 7542)
 Here we present a quantum theory ofintrinsic magnetoresistance for three-dimensional Dirac fermions at a finiteand uniform magnetic field B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Intrinsic Magnetoresistance in Three-Dimensional Dirac Materials|Huan-Wen Wang,Bo Fu,Shun-Qing Shen###
(7545, 7545)
 In a semiclassical regime, it is shown that thelongitudinal magnetoresistance is negative and quadratic of a weak field Bwhile the in-plane transverse magnetoresistance is positive and quadratic of B.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Intrinsic Magnetoresistance in Three-Dimensional Dirac Materials|Huan-Wen Wang,Bo Fu,Shun-Qing Shen###
(7585, 7585)
 In a semiclassical regime, it is shown that thelongitudinal magnetoresistance is negative and quadratic of a weak field Bwhile the in-plane transverse magnetoresistance is positive and quadratic of B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Intrinsic Magnetoresistance in Three-Dimensional Dirac Materials|Huan-Wen Wang,Bo Fu,Shun-Qing Shen###
(7610, 7610)
 In a semiclassical regime, it is shown that thelongitudinal magnetoresistance is negative and quadratic of a weak field Bwhile the in-plane transverse magnetoresistance is positive and quadratic of B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Intrinsic Magnetoresistance in Three-Dimensional Dirac Materials|Huan-Wen Wang,Bo Fu,Shun-Qing Shen###
(7711, 7711)
 In the quantum oscillation regime a formula for the phase shift inShubnikov-de Hass oscillation is present as a function of the mobility and themagnetic field, which is useful for experimental data analysis.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeRh
###Tunneling anisotropic magnetoresistance driven by magnetic phase transition|X. Z. Chen,J. F. Feng,Z. C. Wang,J. Zhang,X. Y. Zhong,C. Song,L. Jin,B. Zhang,F. Li,M. Jiang,Y. Z. Tan,X. J. Zhou,G. Y. Shi,X. F. Zhou,X. D. Han,S. C. Mao,Y. H. Chen,X. F. Han,F. Pan###
(7936, 7937)
 Here we reportan alternative approach to obtaining tunneling anisotropic magnetoresistance inalfa-FeRh-based junctions driven by the magnetic phase transition of alfa-FeRhand resultantly large variation of the density of states in the vicinity of MgOtunneling barrier, referred to as phase transition tunneling anisotropicmagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 20, '%', 1]

FeRh
###Tunneling anisotropic magnetoresistance driven by magnetic phase transition|X. Z. Chen,J. F. Feng,Z. C. Wang,J. Zhang,X. Y. Zhong,C. Song,L. Jin,B. Zhang,F. Li,M. Jiang,Y. Z. Tan,X. J. Zhou,G. Y. Shi,X. F. Zhou,X. D. Han,S. C. Mao,Y. H. Chen,X. F. Han,F. Pan###
(7959, 7960)
 Here we reportan alternative approach to obtaining tunneling anisotropic magnetoresistance inalfa-FeRh-based junctions driven by the magnetic phase transition of alfa-FeRhand resultantly large variation of the density of states in the vicinity of MgOtunneling barrier, referred to as phase transition tunneling anisotropicmagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 20, '%', 1]

MgO
###Tunneling anisotropic magnetoresistance driven by magnetic phase transition|X. Z. Chen,J. F. Feng,Z. C. Wang,J. Zhang,X. Y. Zhong,C. Song,L. Jin,B. Zhang,F. Li,M. Jiang,Y. Z. Tan,X. J. Zhou,G. Y. Shi,X. F. Zhou,X. D. Han,S. C. Mao,Y. H. Chen,X. F. Han,F. Pan###
(7989, 7990)
 Here we reportan alternative approach to obtaining tunneling anisotropic magnetoresistance inalfa-FeRh-based junctions driven by the magnetic phase transition of alfa-FeRhand resultantly large variation of the density of states in the vicinity of MgOtunneling barrier, referred to as phase transition tunneling anisotropicmagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 20, '%', 1]

FeRh
###Tunneling anisotropic magnetoresistance driven by magnetic phase transition|X. Z. Chen,J. F. Feng,Z. C. Wang,J. Zhang,X. Y. Zhong,C. Song,L. Jin,B. Zhang,F. Li,M. Jiang,Y. Z. Tan,X. J. Zhou,G. Y. Shi,X. F. Zhou,X. D. Han,S. C. Mao,Y. H. Chen,X. F. Han,F. Pan###
(8028, 8029)
 The junctions with only one alfa-FeRh magnetic electrodeshow a magnetoresistance ratio up to 20% at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 20, '%', 0]

FeRh/MgO
###Tunneling anisotropic magnetoresistance driven by magnetic phase transition|X. Z. Chen,J. F. Feng,Z. C. Wang,J. Zhang,X. Y. Zhong,C. Song,L. Jin,B. Zhang,F. Li,M. Jiang,Y. Z. Tan,X. J. Zhou,G. Y. Shi,X. F. Zhou,X. D. Han,S. C. Mao,Y. H. Chen,X. F. Han,F. Pan###
(8102, 8106)
 Both the polarityand magnitude of the phase transition tunneling anisotropic magnetoresistancecan be modulated by interfacial engineering at the alfa-FeRh/MgO interface.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[54.0, 20, '%', 1]

NiFe/Pt
###Disentangle magnon magnetoresistance from anisotropic and spin Hall magnetoresistance in NiFe/Pt bilayers|Yanjun Xu,Yumeng Yang,Ziyan Luo,Yihong Wu###
(8181, 8184)
Disentangle magnon magnetoresistance from anisotropic and spin Hall magnetoresistance in NiFe/Pt bilayers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[122.0, 3, 'phi', 3],[190.0, 3, 'phi', 4]

NiFe/Pt
###Disentangle magnon magnetoresistance from anisotropic and spin Hall magnetoresistance in NiFe/Pt bilayers|Yanjun Xu,Yumeng Yang,Ziyan Luo,Yihong Wu###
(8212, 8215)
 We conducted a systematic angular dependence study of nonlinearmagnetoresistance in NiFe/Pt bilayers at variable temperature and field usingthe Wheatstone bridge method.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[91.0, 3, 'phi', 2],[159.0, 3, 'phi', 3]

NiFe/Pt
###Disentangle magnon magnetoresistance from anisotropic and spin Hall magnetoresistance in NiFe/Pt bilayers|Yanjun Xu,Yumeng Yang,Ziyan Luo,Yihong Wu###
(8431, 8434)
 Thephenomenological model developed is able to account for the experimentalresults for both NiFe/Pt and NiFe/Ta samples with different layer thicknesses.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[125.0, 3, 'phi', 2],[57.0, 3, 'phi', 1]

NiFe/Ta
###Disentangle magnon magnetoresistance from anisotropic and spin Hall magnetoresistance in NiFe/Pt bilayers|Yanjun Xu,Yumeng Yang,Ziyan Luo,Yihong Wu###
(8438, 8441)
 Thephenomenological model developed is able to account for the experimentalresults for both NiFe/Pt and NiFe/Ta samples with different layer thicknesses.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[132.0, 3, 'phi', 2],[64.0, 3, 'phi', 1]

Ru2Sn3
###Linear nonsaturating magnetoresistance in the Nowotny chimney ladder compound Ru$_2$Sn$_3$|Beilun Wu,Víctor Barrena,Federico Mompeán,Mar García-Hernández,Hermann Suderow,Isabel Guillamón###
(8526, 8529)
Linear nonsaturating magnetoresistance in the Nowotny chimney ladder compound Ru2Sn3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 20, 'T', 2],[104.0, 5, 'T', 4],[125.0, 20, 'T', 4]

Ru2Sn3
###Linear nonsaturating magnetoresistance in the Nowotny chimney ladder compound Ru$_2$Sn$_3$|Beilun Wu,Víctor Barrena,Federico Mompeán,Mar García-Hernández,Hermann Suderow,Isabel Guillamón###
(8563, 8566)
 We present magnetoresistivity measurements in high-quality single crystals ofthe Nowotny chimney ladder compound Ru2Sn3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 20, 'T', 1],[67.0, 5, 'T', 3],[88.0, 20, 'T', 3]

Ru2Sn3
###Linear nonsaturating magnetoresistance in the Nowotny chimney ladder compound Ru$_2$Sn$_3$|Beilun Wu,Víctor Barrena,Federico Mompeán,Mar García-Hernández,Hermann Suderow,Isabel Guillamón###
(8797, 8800)
 We discuss the relevance of electron-electroninteractions under magnetic fields and aspects of the topologically nontrivialproperties expected in Ru2Sn3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[210.0, 20, 'T', 5],[164.0, 5, 'T', 3],[143.0, 20, 'T', 3]

LaVO3
###Signatures of Chiral Anomaly in the Magnetoresistance of a Quasi-3-Dimensional Electron Gas at the Interface of LaVO$_3$ and KTaO$_3$|Harsha Silotia,Anamika Kumari,Anshu Gupta,Joydip De,Santanu Kumar Pal,Ruchi Tomar,S. Chakraverty###
(8847, 8850)
Signatures of Chiral Anomaly in the Magnetoresistance of a Quasi-3-Dimensional Electron Gas at the Interface of LaVO3 and KTaO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[190.0, 30, 'nm', 3]

KTaO3
###Signatures of Chiral Anomaly in the Magnetoresistance of a Quasi-3-Dimensional Electron Gas at the Interface of LaVO$_3$ and KTaO$_3$|Harsha Silotia,Anamika Kumari,Anshu Gupta,Joydip De,Santanu Kumar Pal,Ruchi Tomar,S. Chakraverty###
(8854, 8857)
Signatures of Chiral Anomaly in the Magnetoresistance of a Quasi-3-Dimensional Electron Gas at the Interface of LaVO3 and KTaO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[183.0, 30, 'nm', 3]

In
###Signatures of Chiral Anomaly in the Magnetoresistance of a Quasi-3-Dimensional Electron Gas at the Interface of LaVO$_3$ and KTaO$_3$|Harsha Silotia,Anamika Kumari,Anshu Gupta,Joydip De,Santanu Kumar Pal,Ruchi Tomar,S. Chakraverty###
(8860, 8860)
 In a Dirac semimetal charges flow between two Weyl nodes when electric andmagnetic fields (BE) are parallel to each other manifesting interestingphysical properties such as negative longitudinal magnetoresistance, planarHall effect and anisotropic magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[180.0, 30, 'nm', 2]

B
###Signatures of Chiral Anomaly in the Magnetoresistance of a Quasi-3-Dimensional Electron Gas at the Interface of LaVO$_3$ and KTaO$_3$|Harsha Silotia,Anamika Kumari,Anshu Gupta,Joydip De,Santanu Kumar Pal,Ruchi Tomar,S. Chakraverty###
(8892, 8892)
 In a Dirac semimetal charges flow between two Weyl nodes when electric andmagnetic fields (BE) are parallel to each other manifesting interestingphysical properties such as negative longitudinal magnetoresistance, planarHall effect and anisotropic magnetoresistance.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 30, 'nm', 2]

B
###Signatures of Chiral Anomaly in the Magnetoresistance of a Quasi-3-Dimensional Electron Gas at the Interface of LaVO$_3$ and KTaO$_3$|Harsha Silotia,Anamika Kumari,Anshu Gupta,Joydip De,Santanu Kumar Pal,Ruchi Tomar,S. Chakraverty###
(8981, 8981)
 We observe a co-existence ofweak antilocalization with large negative longitudinal magnetoresistance and anunusual Hall resistance with (BE) configuration, at the conducting interfaceof LaVO3 and KTaO3.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 30, 'nm', 1]

LaVO3
###Signatures of Chiral Anomaly in the Magnetoresistance of a Quasi-3-Dimensional Electron Gas at the Interface of LaVO$_3$ and KTaO$_3$|Harsha Silotia,Anamika Kumari,Anshu Gupta,Joydip De,Santanu Kumar Pal,Ruchi Tomar,S. Chakraverty###
(8999, 9002)
 We observe a co-existence ofweak antilocalization with large negative longitudinal magnetoresistance and anunusual Hall resistance with (BE) configuration, at the conducting interfaceof LaVO3 and KTaO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 30, 'nm', 1]

KTaO3
###Signatures of Chiral Anomaly in the Magnetoresistance of a Quasi-3-Dimensional Electron Gas at the Interface of LaVO$_3$ and KTaO$_3$|Harsha Silotia,Anamika Kumari,Anshu Gupta,Joydip De,Santanu Kumar Pal,Ruchi Tomar,S. Chakraverty###
(9006, 9009)
 We observe a co-existence ofweak antilocalization with large negative longitudinal magnetoresistance and anunusual Hall resistance with (BE) configuration, at the conducting interfaceof LaVO3 and KTaO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 30, 'nm', 1]

B
###Signatures of Chiral Anomaly in the Magnetoresistance of a Quasi-3-Dimensional Electron Gas at the Interface of LaVO$_3$ and KTaO$_3$|Harsha Silotia,Anamika Kumari,Anshu Gupta,Joydip De,Santanu Kumar Pal,Ruchi Tomar,S. Chakraverty###
(9108, 9108)
 Both planar Halleffect and anisotropic magnetoresistance exhibit oscillatory behaviour as afunction of the angle between E<missing VAR> and B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 30, 'nm', 1]

In
###New Mechanism of Magnetoresistance in Bulk Semiconductors: Boundary Condition Effects|G. Gonzalez de la Cruz,Yu. G. Gurevich,V. V. Prosentsov###
(9317, 9317)
 In particular,even when the relaxation time is independent of the electron energy,magnetoresistance is not vanish.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(PC)
###Ballistic versus diffusive magnetoresistance of a magnetic point contact|L. R. Tagirov,B. P. Vodopyanov,K. B. Efetov###
(9778, 9781)
 The quasiclassical theory of a nanosize point contacts (PC) between twoferromagnets is developed.
Featurization successful!
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PC
###Ballistic versus diffusive magnetoresistance of a magnetic point contact|L. R. Tagirov,B. P. Vodopyanov,K. B. Efetov###
(9807, 9808)
 The maximum available magnetoresistance values in PCare calculated for ballistic versus diffusive transport through the area of acontact.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Ballistic versus diffusive magnetoresistance of a magnetic point contact|L. R. Tagirov,B. P. Vodopyanov,K. B. Efetov###
(9839, 9839)
 In the ballistic regime the magnetoresistance in excess of fewhundreds percents is obtained for the iron-group ferromagnets.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PC
###Ballistic versus diffusive magnetoresistance of a magnetic point contact|L. R. Tagirov,B. P. Vodopyanov,K. B. Efetov###
(9900, 9901)
 The necessaryconditions for realization of so large magnetoresistance in PC, and theexperimental results by Garcia et al are discussed<missing PERIOD>
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Model for a Macroscopically Disordered Conductor with an Exactly Linear High-Field Magnetoresistance|Vishwesha Guttal,David Stroud###
(10069, 10069)
 At other compositions, an effectivemedium calculation leads to a saturating magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###Non-collinear Spin Valve Effect in Ferromagnetic Semiconductor Trilayers|G. Xiang,B. L. Sheu,M. Zhu,P. Schiffer,N. Samarth###
(10180, 10180)
 We report the observation of the spin valve effect in(Ga,Mn)As/p<missing VAR>-GaAs/(Ga,Mn)As trilayer devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Non-collinear Spin Valve Effect in Ferromagnetic Semiconductor Trilayers|G. Xiang,B. L. Sheu,M. Zhu,P. Schiffer,N. Samarth###
(10182, 10182)
 We report the observation of the spin valve effect in(Ga,Mn)As/p<missing VAR>-GaAs/(Ga,Mn)As trilayer devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Non-collinear Spin Valve Effect in Ferromagnetic Semiconductor Trilayers|G. Xiang,B. L. Sheu,M. Zhu,P. Schiffer,N. Samarth###
(10184, 10184)
 We report the observation of the spin valve effect in(Ga,Mn)As/p<missing VAR>-GaAs/(Ga,Mn)As trilayer devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###Non-collinear Spin Valve Effect in Ferromagnetic Semiconductor Trilayers|G. Xiang,B. L. Sheu,M. Zhu,P. Schiffer,N. Samarth###
(10192, 10192)
 We report the observation of the spin valve effect in(Ga,Mn)As/p<missing VAR>-GaAs/(Ga,Mn)As trilayer devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Non-collinear Spin Valve Effect in Ferromagnetic Semiconductor Trilayers|G. Xiang,B. L. Sheu,M. Zhu,P. Schiffer,N. Samarth###
(10194, 10194)
 We report the observation of the spin valve effect in(Ga,Mn)As/p<missing VAR>-GaAs/(Ga,Mn)As trilayer devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Non-collinear Spin Valve Effect in Ferromagnetic Semiconductor Trilayers|G. Xiang,B. L. Sheu,M. Zhu,P. Schiffer,N. Samarth###
(10196, 10196)
 We report the observation of the spin valve effect in(Ga,Mn)As/p<missing VAR>-GaAs/(Ga,Mn)As trilayer devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co/Al2O3/NiFe
###Room temperature tunneling anisotropic and collinear magnetoresistance|A. N. Grigorenko,K. S. Novoselov,D. J. Mapps###
(10381, 10389)
 We report a room temperature tunneling anisotropic magnetoresistance inCo/Al2O3/NiFe junctions containing magnetic electrodes oxidized prior toforming the Al2O3 layer.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Al2O3
###Room temperature tunneling anisotropic and collinear magnetoresistance|A. N. Grigorenko,K. S. Novoselov,D. J. Mapps###
(10410, 10413)
 We report a room temperature tunneling anisotropic magnetoresistance inCo/Al2O3/NiFe junctions containing magnetic electrodes oxidized prior toforming the Al2O3 layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(MnAs)
###Quasi-reversible Magnetoresistance in Exchange Spring Tunnel Junctions|M. Zhu,M. J. Wilson,P. Mitra,P. Schiffer,N. Samarth###
(10609, 10612)
 We report a large, quasi-reversible tunnel magnetoresistance inexchange-biased ferromagnetic semiconductor tunnel junctions wherein a softferromagnetic semiconductor (gma) is exchange coupled to a hard ferromagneticmetal (MnAs).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###The effects of spin-spin interactions on magnetoresistance in disordered organic semiconductors|N. J. Harmon,M. E. Flatté###
(10864, 10864)
 In addition we report newmagnetoresistive behavior that critically depends upon the amount of anisotropyin the dipolar interaction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi
###Two-Fold-Symmetric Magnetoresistance in Single Crystals of Tetragonal BiCh2-Based Superconductor LaO0.5F0.5BiSSe|Kazuhisa Hoshi,Motoi Kimata,Yosuke Goto,Tatsuma D Matsuda,Yoshikazu Mizuguchi###
(11137, 11137)
Two-Fold-Symmetric Magnetoresistance in Single Crystals of Tetragonal BiCh2-Based Superconductor LaO0.5F0.5BiSSe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaO0.5F0.5BiSSe
###Two-Fold-Symmetric Magnetoresistance in Single Crystals of Tetragonal BiCh2-Based Superconductor LaO0.5F0.5BiSSe|Kazuhisa Hoshi,Motoi Kimata,Yosuke Goto,Tatsuma D Matsuda,Yoshikazu Mizuguchi###
(11145, 11152)
Two-Fold-Symmetric Magnetoresistance in Single Crystals of Tetragonal BiCh2-Based Superconductor LaO0.5F0.5BiSSe.
Featurization terminated normally.
0,0,0,0,0,0,0,0.1,0.1,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi
###Two-Fold-Symmetric Magnetoresistance in Single Crystals of Tetragonal BiCh2-Based Superconductor LaO0.5F0.5BiSSe|Kazuhisa Hoshi,Motoi Kimata,Yosuke Goto,Tatsuma D Matsuda,Yoshikazu Mizuguchi###
(11190, 11190)
 We have investigated the in-plane anisotropy of the c<missing VAR>-axis magnetoresistancefor single crystals of a BiCh2-based superconductor LaO0.5F0.5BiSSe underin-plane magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaO0.5F0.5BiSSe
###Two-Fold-Symmetric Magnetoresistance in Single Crystals of Tetragonal BiCh2-Based Superconductor LaO0.5F0.5BiSSe|Kazuhisa Hoshi,Motoi Kimata,Yosuke Goto,Tatsuma D Matsuda,Yoshikazu Mizuguchi###
(11198, 11205)
 We have investigated the in-plane anisotropy of the c<missing VAR>-axis magnetoresistancefor single crystals of a BiCh2-based superconductor LaO0.5F0.5BiSSe underin-plane magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0.1,0.1,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaO0.5F0.5BiSSe
###Two-Fold-Symmetric Magnetoresistance in Single Crystals of Tetragonal BiCh2-Based Superconductor LaO0.5F0.5BiSSe|Kazuhisa Hoshi,Motoi Kimata,Yosuke Goto,Tatsuma D Matsuda,Yoshikazu Mizuguchi###
(11250, 11257)
 We observed two-fold symmetry in the c<missing VAR>-axismagnetoresistance in the ab-plane of LaO0.5F0.5BiSSe while the crystalpossessed a tetragonal square plane with four-fold symmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0.1,0.1,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Magnetic field dependent variable range hopping behaviour in resistivity at low temperatures in polycrystalline colossal magnetoresistive manganites: evidence of spin polarised tunnelling|P. Raychaudhuri,P. Taneja,S. Sarkar,A. K. Nigam,P. Ayyub,R. Pinto###
(11431, 11431)
 It has been observed that the low temperature magnetoresistance behaviour inpolycrystalline colossal magnetoresistive (CMR) manganites differ significantlyfrom the single crystals.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magnetic field dependent variable range hopping behaviour in resistivity at low temperatures in polycrystalline colossal magnetoresistive manganites: evidence of spin polarised tunnelling|P. Raychaudhuri,P. Taneja,S. Sarkar,A. K. Nigam,P. Ayyub,R. Pinto###
(11536, 11536)
 In this paper we show the existence of avariable range hopping behaviour in resistivity at low temperatures inpolycrystalline CMR samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Magnetic field dependent variable range hopping behaviour in resistivity at low temperatures in polycrystalline colossal magnetoresistive manganites: evidence of spin polarised tunnelling|P. Raychaudhuri,P. Taneja,S. Sarkar,A. K. Nigam,P. Ayyub,R. Pinto###
(11578, 11578)
 In this paper we show the existence of avariable range hopping behaviour in resistivity at low temperatures inpolycrystalline CMR samples.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

RuO2
###Magetoresistance of RuO_2-based resistance thermometers below 0.3 K|Michio Watanabe,Masashi Morishita,Youiti Ootuka###
(11649, 11651)
Magetoresistance of RuO2-based resistance thermometers below 0.3 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 0.3, 'K', 0],[45.0, 0.05, 'K', 1],[48.0, 0.3, 'K', 1],[59.0, 8, 'T', 1],[72.0, 0.5, 'T', 2],[162.0, 50, 'mK', 4],[199.0, 15, 'mK', 5],[227.0, 15, 'mK', 6]

RuO2
###Magetoresistance of RuO_2-based resistance thermometers below 0.3 K|Michio Watanabe,Masashi Morishita,Youiti Ootuka###
(11675, 11677)
 We have determined the magnetoresistance of RuO2-based resistors (ScientificInstruments R<missing VAR>O-600) between 0.05 K and 0.3 K in magnetic fields up to 8 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 0.3, 'K', 1],[19.0, 0.05, 'K', 0],[22.0, 0.3, 'K', 0],[33.0, 8, 'T', 0],[46.0, 0.5, 'T', 1],[136.0, 50, 'mK', 3],[173.0, 15, 'mK', 4],[201.0, 15, 'mK', 5]

O
###Magetoresistance of RuO_2-based resistance thermometers below 0.3 K|Michio Watanabe,Masashi Morishita,Youiti Ootuka###
(11690, 11690)
 We have determined the magnetoresistance of RuO2-based resistors (ScientificInstruments R<missing VAR>O-600) between 0.05 K and 0.3 K in magnetic fields up to 8 T.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 0.3, 'K', 1],[6.0, 0.05, 'K', 0],[9.0, 0.3, 'K', 0],[20.0, 8, 'T', 0],[33.0, 0.5, 'T', 1],[123.0, 50, 'mK', 3],[160.0, 15, 'mK', 4],[188.0, 15, 'mK', 5]

CeRhSn2
###Magnetic Transition in the Kondo Lattice System CeRhSn2|Z. Hossain,L. C. Gupta,C. Geibel###
(11903, 11906)
Magnetic Transition in the Kondo Lattice System CeRhSn2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0.5,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 4, 'K', 1]

CeRhSn2
###Magnetic Transition in the Kondo Lattice System CeRhSn2|Z. Hossain,L. C. Gupta,C. Geibel###
(11936, 11939)
 Our resistivity, magnetoresistance, magnetization and specific heat dataprovide unambiguous evidence that CeRhSn2 is a Kondo lattice system whichundergoes magnetic transition below 4 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0.5,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 4, 'K', 0]

In
###Switching Current vs. Magnetoresistance in Magnetic Multilayer Nanopillars|S. Urazhdin,Norman O. Birge,W. P. Pratt Jr.,J. Bass###
(12132, 12132)
 In all cases, we find an approximately linear dependencebetween magnetoresistance and inverse switching current.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Negative Magnetoresistance in (In,Mn)As|S. J. May,A. J. Blattner,B. W. Wessels###
(12226, 12226)
Negative Magnetoresistance in (In,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 5, 'to', 2],[64.0, 300, 'K', 2],[81.0, 90, 'ohm', 3],[86.0, 0.05, 'ohm', 3],[125.0, 17, 'K', 5],[142.0, 5, 'K', 5]

Mn
###Negative Magnetoresistance in (In,Mn)As|S. J. May,A. J. Blattner,B. W. Wessels###
(12228, 12228)
Negative Magnetoresistance in (In,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 5, 'to', 2],[62.0, 300, 'K', 2],[79.0, 90, 'ohm', 3],[84.0, 0.05, 'ohm', 3],[123.0, 17, 'K', 5],[140.0, 5, 'K', 5]

As
###Negative Magnetoresistance in (In,Mn)As|S. J. May,A. J. Blattner,B. W. Wessels###
(12230, 12230)
Negative Magnetoresistance in (In,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 5, 'to', 2],[60.0, 300, 'K', 2],[77.0, 90, 'ohm', 3],[82.0, 0.05, 'ohm', 3],[121.0, 17, 'K', 5],[138.0, 5, 'K', 5]

In0.95Mn0.05As
###Negative Magnetoresistance in (In,Mn)As|S. J. May,A. J. Blattner,B. W. Wessels###
(12243, 12247)
 The magnetotransport properties of an In0.95Mn0.05As thin film grown bymetal-organic vapor phase epitaxy were measured.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.025,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.475,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 5, 'to', 1],[43.0, 300, 'K', 1],[60.0, 90, 'ohm', 2],[65.0, 0.05, 'ohm', 2],[104.0, 17, 'K', 4],[121.0, 5, 'K', 4]

As
###Magnetoresistance of atomic-scale electromigrated nickel nanocontacts|Z. K. Keane,L. H. Yu,D. Natelson###
(12536, 12536)
 As junction size is decreased to the singlechannel limit, conventional anisotropic magnetoresistance (AMR) increases inmagnitude, approaching the size expected for tunneling magnetoresistance (TMR)upon tunnel junction formation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin-dependent Quantum Interference in Single-Wall Carbon Nanotubes with Ferromagnetic Contacts|H. T. Man,I. J. W. Wever,A. F. Morpurgo###
(12734, 12734)
 In the linear regime the spin-induced magnetoresistance oscillateswith gate voltage in quantitative agreement with calculations based on aLandauer-Buttiker model for independent electrons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Spin-dependent Quantum Interference in Single-Wall Carbon Nanotubes with Ferromagnetic Contacts|H. T. Man,I. J. W. Wever,A. F. Morpurgo###
(12848, 12848)
 At higher bias, the spin-induced magnetoresistance disappears becauseof a sharp decrease in the effective spin-polarization injected from theferromagnetic electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Transport in Magnetic Nanoparticles Super-Lattices : Coulomb Blockade, Hysteresis and Magnetic Field Induced Switching|Reasmey P. Tan,Julian Carrey,Celine Desvaux,Jeremie Grisolia,Philippe Renaud,Bruno Chaudret,Marc Respaud###
(12958, 12958)
 We report on magnetotransport measurements on millimetric super-lattices ofCo-Fe nanoparticles surrounded by an organic layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 10, 'K', 3],[140.0, 1.8, 'K', 4]

Fe
###Transport in Magnetic Nanoparticles Super-Lattices : Coulomb Blockade, Hysteresis and Magnetic Field Induced Switching|Reasmey P. Tan,Julian Carrey,Celine Desvaux,Jeremie Grisolia,Philippe Renaud,Bruno Chaudret,Marc Respaud###
(12960, 12960)
 We report on magnetotransport measurements on millimetric super-lattices ofCo-Fe nanoparticles surrounded by an organic layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 10, 'K', 3],[138.0, 1.8, 'K', 4]

At
###Transport in Magnetic Nanoparticles Super-Lattices : Coulomb Blockade, Hysteresis and Magnetic Field Induced Switching|Reasmey P. Tan,Julian Carrey,Celine Desvaux,Jeremie Grisolia,Philippe Renaud,Bruno Chaudret,Marc Respaud###
(12975, 12975)
 At low temperature, thetransition between the Coulomb blockade and the conductive regime becomesabrupt and hysteretic.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 10, 'K', 2],[123.0, 1.8, 'K', 3]

CoFe
###High-field and low field magnetoresistance of CoFe nanoparticles elaborated by organometallic chemistry|Reasmey P. Tan,Julian Carrey,Marc Respaud,Celine Desvaux,Philippe Renaud,Bruno Chaudret###
(13147, 13148)
High-field and low field magnetoresistance of CoFe nanoparticles elaborated by organometallic chemistry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 10, 'K', 5],[162.0, 1.6, 'K', 7]

CoFe
###High-field and low field magnetoresistance of CoFe nanoparticles elaborated by organometallic chemistry|Reasmey P. Tan,Julian Carrey,Marc Respaud,Celine Desvaux,Philippe Renaud,Bruno Chaudret###
(13173, 13174)
 We report on magnetotransport measurements on CoFe nanoparticles surroundedby an insulating organic layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 10, 'K', 4],[136.0, 1.6, 'K', 6]

At
###High-field and low field magnetoresistance of CoFe nanoparticles elaborated by organometallic chemistry|Reasmey P. Tan,Julian Carrey,Marc Respaud,Celine Desvaux,Philippe Renaud,Bruno Chaudret###
(13309, 13309)
 At 1.6 K, this high-field magnetoresistancevanishes and an inverse low field tunnelling magnetoresistance is observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 10, 'K', 2],[1.0, 1.6, 'K', 0]

In
###Asymmetric Bias Dependence in Double Spin Filter Tunnel Junctions|G. X. Miao,J. S. Moodera###
(13370, 13370)
 In double spin filter (SF) tunnel junctions, the spin information isgenerated and analyzed purely from the SF effect with nonmagnetic electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(SF)
###Asymmetric Bias Dependence in Double Spin Filter Tunnel Junctions|G. X. Miao,J. S. Moodera###
(13378, 13381)
 In double spin filter (SF) tunnel junctions, the spin information isgenerated and analyzed purely from the SF effect with nonmagnetic electrodes.
Featurization successful!
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SF
###Asymmetric Bias Dependence in Double Spin Filter Tunnel Junctions|G. X. Miao,J. S. Moodera###
(13409, 13410)
 In double spin filter (SF) tunnel junctions, the spin information isgenerated and analyzed purely from the SF effect with nonmagnetic electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Asymmetric Bias Dependence in Double Spin Filter Tunnel Junctions|G. X. Miao,J. S. Moodera###
(13422, 13422)
In this article we numerically evaluate the bias dependence ofmagnetoresistance in such tunnel junctions (nonmagnetic metal / SF /nonmagnetic insulator / SF / nonmagnetic metal), particularly in cases whendifferent SF materials are utilized.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SF
###Asymmetric Bias Dependence in Double Spin Filter Tunnel Junctions|G. X. Miao,J. S. Moodera###
(13460, 13461)
In this article we numerically evaluate the bias dependence ofmagnetoresistance in such tunnel junctions (nonmagnetic metal / SF /nonmagnetic insulator / SF / nonmagnetic metal), particularly in cases whendifferent SF materials are utilized.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SF
###Asymmetric Bias Dependence in Double Spin Filter Tunnel Junctions|G. X. Miao,J. S. Moodera###
(13472, 13473)
In this article we numerically evaluate the bias dependence ofmagnetoresistance in such tunnel junctions (nonmagnetic metal / SF /nonmagnetic insulator / SF / nonmagnetic metal), particularly in cases whendifferent SF materials are utilized.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SF
###Asymmetric Bias Dependence in Double Spin Filter Tunnel Junctions|G. X. Miao,J. S. Moodera###
(13494, 13495)
In this article we numerically evaluate the bias dependence ofmagnetoresistance in such tunnel junctions (nonmagnetic metal / SF /nonmagnetic insulator / SF / nonmagnetic metal), particularly in cases whendifferent SF materials are utilized.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WKB
###Asymmetric Bias Dependence in Double Spin Filter Tunnel Junctions|G. X. Miao,J. S. Moodera###
(13535, 13537)
 A large magnetoresistance withnonmonotonic and asymmetric bias dependence is expected within the frame of WKBapproximation.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni80Fe20
###Magnetotransport effects of ultrathin Ni80Fe20 films probed in-situ|Stephen Krzyk,Alexander von Schmidsfeld,Mathias Kläui,Ulrich Rüdiger###
(13624, 13627)
Magnetotransport effects of ultrathin Ni80Fe20 films probed in-situ.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 12, 'nm', 1]

(Ni80Fe20)
###Magnetotransport effects of ultrathin Ni80Fe20 films probed in-situ|Stephen Krzyk,Alexander von Schmidsfeld,Mathias Kläui,Ulrich Rüdiger###
(13652, 13657)
 We have investigated the magnetoresistance of Permalloy (Ni80Fe20) films withthicknesses ranging from a single monolayer to 12 nm, grown on Al2O3, MgO andSiO2 substrates.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 12, 'nm', 0]

Al2O3
###Magnetotransport effects of ultrathin Ni80Fe20 films probed in-situ|Stephen Krzyk,Alexander von Schmidsfeld,Mathias Kläui,Ulrich Rüdiger###
(13684, 13687)
 We have investigated the magnetoresistance of Permalloy (Ni80Fe20) films withthicknesses ranging from a single monolayer to 12 nm, grown on Al2O3, MgO andSiO2 substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 12, 'nm', 0]

MgO
###Magnetotransport effects of ultrathin Ni80Fe20 films probed in-situ|Stephen Krzyk,Alexander von Schmidsfeld,Mathias Kläui,Ulrich Rüdiger###
(13690, 13691)
 We have investigated the magnetoresistance of Permalloy (Ni80Fe20) films withthicknesses ranging from a single monolayer to 12 nm, grown on Al2O3, MgO andSiO2 substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 12, 'nm', 0]

SiO2
###Magnetotransport effects of ultrathin Ni80Fe20 films probed in-situ|Stephen Krzyk,Alexander von Schmidsfeld,Mathias Kläui,Ulrich Rüdiger###
(13696, 13698)
 We have investigated the magnetoresistance of Permalloy (Ni80Fe20) films withthicknesses ranging from a single monolayer to 12 nm, grown on Al2O3, MgO andSiO2 substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 12, 'nm', 0]

UHV
###Magnetotransport effects of ultrathin Ni80Fe20 films probed in-situ|Stephen Krzyk,Alexander von Schmidsfeld,Mathias Kläui,Ulrich Rüdiger###
(13726, 13728)
 Growth and transport measurements were carried out undercryogenic conditions in UHV.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[49.0, 12, 'nm', 1]

SiO2
###Magnetotransport effects of ultrathin Ni80Fe20 films probed in-situ|Stephen Krzyk,Alexander von Schmidsfeld,Mathias Kläui,Ulrich Rüdiger###
(14037, 14039)
 We attribute this to an increasingly pronounced island growth andslower percolation process of Permalloy when comparing growth on SiO2, MgO andAl2O3 substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[360.0, 12, 'nm', 7]

MgO
###Magnetotransport effects of ultrathin Ni80Fe20 films probed in-situ|Stephen Krzyk,Alexander von Schmidsfeld,Mathias Kläui,Ulrich Rüdiger###
(14042, 14043)
 We attribute this to an increasingly pronounced island growth andslower percolation process of Permalloy when comparing growth on SiO2, MgO andAl2O3 substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[365.0, 12, 'nm', 7]

Al2O3
###Magnetotransport effects of ultrathin Ni80Fe20 films probed in-situ|Stephen Krzyk,Alexander von Schmidsfeld,Mathias Kläui,Ulrich Rüdiger###
(14048, 14051)
 We attribute this to an increasingly pronounced island growth andslower percolation process of Permalloy when comparing growth on SiO2, MgO andAl2O3 substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[371.0, 12, 'nm', 7]

SiO2
###Magnetotransport effects of ultrathin Ni80Fe20 films probed in-situ|Stephen Krzyk,Alexander von Schmidsfeld,Mathias Kläui,Ulrich Rüdiger###
(14094, 14096)
 The different growth characteristics result in a markedlyearlier onset of both tunneling magnetoresistance and anisotropicmagnetoresistance for SiO2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[417.0, 12, 'nm', 8]

Al2O3
###Magnetotransport effects of ultrathin Ni80Fe20 films probed in-situ|Stephen Krzyk,Alexander von Schmidsfeld,Mathias Kläui,Ulrich Rüdiger###
(14101, 14104)
 For Al2O3 in particular the growth mode results ina structure of the film containing two different contributions to theferromagnetism which lead to two distinct coercive fields in the high thicknessregime.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[424.0, 12, 'nm', 9]

Ni
###Absence of weak antilocalization in ferromagnetic films|Noa Kurzweil,Eugene Kogan,Aviad Frydman###
(14474, 14474)
 We present magnetoresistance measurements performed on ultrathin films ofamorphous Ni and Fe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Absence of weak antilocalization in ferromagnetic films|Noa Kurzweil,Eugene Kogan,Aviad Frydman###
(14478, 14478)
 We present magnetoresistance measurements performed on ultrathin films ofamorphous Ni and Fe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Absence of weak antilocalization in ferromagnetic films|Noa Kurzweil,Eugene Kogan,Aviad Frydman###
(14481, 14481)
 In these films the Curie temperature drops to zero atsmall thickness, making it possible to study the effect of ferromagnetism onlocalization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Absence of weak antilocalization in ferromagnetic films|Noa Kurzweil,Eugene Kogan,Aviad Frydman###
(14589, 14589)
 As thefilms become ferromagnetic the magnetoresistance changes sign and becomesnegative.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Semiclassical theory of magnetoresistance in positionally-disordered organic semiconductors|N. J. Harmon,M. E. Flatté###
(14816, 14816)
 In other regimes, themagnetoresistance can be straightforwardly evaluated numerically.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFe
###Light controlled magnetoresistance and magnetic field controlled photoresistance in CoFe film deposited on BiFeO3|B. Kundys,C. Meny,M. R. J. Gibbs,V. Da Costa,M. Viret,M. Acosta,D. Colson,B. Doudin###
(14965, 14966)
Light controlled magnetoresistance and magnetic field controlled photoresistance in CoFe film deposited on BiFeO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BiFeO3
###Light controlled magnetoresistance and magnetic field controlled photoresistance in CoFe film deposited on BiFeO3|B. Kundys,C. Meny,M. R. J. Gibbs,V. Da Costa,M. Viret,M. Acosta,D. Colson,B. Doudin###
(14974, 14977)
Light controlled magnetoresistance and magnetic field controlled photoresistance in CoFe film deposited on BiFeO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFe
###Light controlled magnetoresistance and magnetic field controlled photoresistance in CoFe film deposited on BiFeO3|B. Kundys,C. Meny,M. R. J. Gibbs,V. Da Costa,M. Viret,M. Acosta,D. Colson,B. Doudin###
(15007, 15008)
 We present a magnetoresistive-photoresistive device based on the interactionof a piezomagnetic CoFe thin film with a photostrictive BiFeO3 substrate thatundergoes light-induced strain.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BiFeO3
###Light controlled magnetoresistance and magnetic field controlled photoresistance in CoFe film deposited on BiFeO3|B. Kundys,C. Meny,M. R. J. Gibbs,V. Da Costa,M. Viret,M. Acosta,D. Colson,B. Doudin###
(15020, 15023)
 We present a magnetoresistive-photoresistive device based on the interactionof a piezomagnetic CoFe thin film with a photostrictive BiFeO3 substrate thatundergoes light-induced strain.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFe
###Light controlled magnetoresistance and magnetic field controlled photoresistance in CoFe film deposited on BiFeO3|B. Kundys,C. Meny,M. R. J. Gibbs,V. Da Costa,M. Viret,M. Acosta,D. Colson,B. Doudin###
(15058, 15059)
 The magnitude of the resistance andmagnetoresistance in the CoFe film can be controlled by the wavelength of theincident light on the BiFeO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BiFeO3
###Light controlled magnetoresistance and magnetic field controlled photoresistance in CoFe film deposited on BiFeO3|B. Kundys,C. Meny,M. R. J. Gibbs,V. Da Costa,M. Viret,M. Acosta,D. Colson,B. Doudin###
(15088, 15091)
 The magnitude of the resistance andmagnetoresistance in the CoFe film can be controlled by the wavelength of theincident light on the BiFeO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFe
###Light controlled magnetoresistance and magnetic field controlled photoresistance in CoFe film deposited on BiFeO3|B. Kundys,C. Meny,M. R. J. Gibbs,V. Da Costa,M. Viret,M. Acosta,D. Colson,B. Doudin###
(15139, 15140)
 Moreover, a light-induced decrease in anisotropicmagnetoresistance is detected due to an additional magnetoelastic contributionto magnetic anisotropy of the CoFe film.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs/AlGaAs
###Combined study of microwave-power/linear-polarization dependence of the microwave-radiation-induced magnetoresistance oscillations in GaAs/AlGaAs devices|Tianyu Ye,Han-Chun Liu,W. Wegscheider,R. G. Mani###
(15495, 15500)
Combined study of microwave-power/linear-polarization dependence of the microwave-radiation-induced magnetoresistance oscillations in GaAs/AlGaAs devices.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

GaAs/AlGaAs
###Combined study of microwave-power/linear-polarization dependence of the microwave-radiation-induced magnetoresistance oscillations in GaAs/AlGaAs devices|Tianyu Ye,Han-Chun Liu,W. Wegscheider,R. G. Mani###
(15555, 15560)
 We report the results of a combined microwave polarization-dependence andpower-dependence study of the microwave-radiation-induced magnetoresistanceoscillations in high mobility GaAs/AlGaAs heterostructure devices at liquidhelium temperatures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Bi2Te3
###Magnetoresistance from broken spin helicity|D. P. Leusink,R. G. J. Smits,P. Ngabonziza,X. L. Wang,S. Wiedmann,U. Zeitler,A. Brinkman###
(16067, 16070)
Here, we observe a large magnetoresistance in the conducting bulk state ofBi2Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Hanle Magnetoresistance in Thin Metal Films with Strong Spin-Orbit Coupling|Saül Vélez,Vitaly N. Golovach,Amilcar Bedoya-Pinto,Miren Isasa,Edurne Sagasta,Mikel Abadia,Celia Rogero,Luis E. Hueso,F. Sebastian Bergeret,Fèlix Casanova###
(16330, 16330)
 We report measurements of a new type of magnetoresistance in Pt and Ta thinfilms.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 99, ',', 1]

Ta
###Hanle Magnetoresistance in Thin Metal Films with Strong Spin-Orbit Coupling|Saül Vélez,Vitaly N. Golovach,Amilcar Bedoya-Pinto,Miren Isasa,Edurne Sagasta,Mikel Abadia,Celia Rogero,Luis E. Hueso,F. Sebastian Bergeret,Fèlix Casanova###
(16334, 16334)
 We report measurements of a new type of magnetoresistance in Pt and Ta thinfilms.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 99, ',', 1]

P
###Hanle Magnetoresistance in Thin Metal Films with Strong Spin-Orbit Coupling|Saül Vélez,Vitaly N. Golovach,Amilcar Bedoya-Pinto,Miren Isasa,Edurne Sagasta,Mikel Abadia,Celia Rogero,Luis E. Hueso,F. Sebastian Bergeret,Fèlix Casanova###
(16421, 16421)
 The spin accumulation created at the surfaces of the film by the spinHall effect decreases in a magnetic field because of the Hanle effect,resulting in an increase of the electrical resistance as predicted by Dyakonov[PRL 99, 126601 (2007)].
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 99, ',', 0]

Pt/Y3Fe5O12
###Hanle Magnetoresistance in Thin Metal Films with Strong Spin-Orbit Coupling|Saül Vélez,Vitaly N. Golovach,Amilcar Bedoya-Pinto,Miren Isasa,Edurne Sagasta,Mikel Abadia,Celia Rogero,Luis E. Hueso,F. Sebastian Bergeret,Fèlix Casanova###
(16465, 16472)
 The angular dependence of this magnetoresistanceresembles the recently discovered spin Hall magnetoresistance in Pt/Y3Fe5O12bilayers, although the presence of a ferromagnetic insulator is not required.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[40.0, 99, ',', 1]

GaAs/AlGaAs
###Comparative study of microwave radiation-induced magnetoresistive oscillations induced by circularly- and linearly- polarized photo-excitation|Tianyu Ye,Han-Chun Liu,Zhuo Wang,W. Wegscheider,Ramesh G. Mani###
(16630, 16635)
 A comparative study of the radiation-induced magnetoresistance oscillationsin the high mobility GaAs/AlGaAs heterostructure two dimensional electronsystem (2DES) under linearly- and circularlypolarized microwave excitationindicates a profound difference in the response observed upon rotating themicrowave launcher for the two cases, although circularly polarized microwaveradiation induced magnetoresistance oscillations observed at low magneticfields are similar to the oscillations observed with linearly polarizedradiation.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

S
###Comparative study of microwave radiation-induced magnetoresistive oscillations induced by circularly- and linearly- polarized photo-excitation|Tianyu Ye,Han-Chun Liu,Zhuo Wang,W. Wegscheider,Ramesh G. Mani###
(16652, 16652)
 A comparative study of the radiation-induced magnetoresistance oscillationsin the high mobility GaAs/AlGaAs heterostructure two dimensional electronsystem (2DES) under linearly- and circularlypolarized microwave excitationindicates a profound difference in the response observed upon rotating themicrowave launcher for the two cases, although circularly polarized microwaveradiation induced magnetoresistance oscillations observed at low magneticfields are similar to the oscillations observed with linearly polarizedradiation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Spintronic Functionalities in Multiferroic Oxide-based Heterostructures|I. Fina,X. Martí###
(16926, 16926)
 As aresult, a fruitful research field has emerged contemporaneously with theconsolidation of spintronic.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cd3As2
###Negative Magnetoresistance in Dirac Semimetal Cd3As2|Hui Li,Hongtao He,Hai-Zhou Lu,Huachen Zhang,Hongchao Liu,Rong Ma,Zhiyong Fan,Shun-Qing Shen,Jiannong Wang###
(17337, 17340)
Negative Magnetoresistance in Dirac Semimetal Cd3As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[249.0, 66, '%', 5],[253.0, 50, 'K', 5],[369.0, 300, 'K', 7],[372.0, 2.2, 'x', 7],[381.0, 50, 'K', 7],[473.0, 1670, '%', 10],[484.0, 2, 'K', 10]

Cd3As2
###Negative Magnetoresistance in Dirac Semimetal Cd3As2|Hui Li,Hongtao He,Hai-Zhou Lu,Huachen Zhang,Hongchao Liu,Rong Ma,Zhiyong Fan,Shun-Qing Shen,Jiannong Wang###
(17451, 17454)
 Recent experiments reveal that Cd3As2, a Diractopological semimetal, has the record-high mobility and exhibits positivelinear magnetoresistance in the orthogonal magnetic and electric fieldconfiguration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 66, '%', 2],[139.0, 50, 'K', 2],[255.0, 300, 'K', 4],[258.0, 2.2, 'x', 4],[267.0, 50, 'K', 4],[359.0, 1670, '%', 7],[370.0, 2, 'K', 7]

Cd3As2
###Negative Magnetoresistance in Dirac Semimetal Cd3As2|Hui Li,Hongtao He,Hai-Zhou Lu,Huachen Zhang,Hongchao Liu,Rong Ma,Zhiyong Fan,Shun-Qing Shen,Jiannong Wang###
(17559, 17562)
 Here, we report theobservation of the negative magnetoresistance in Cd3As2 microribbons in theparallel magnetic and electric field configuration as large as 66% at 50 K andeven visible at room temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 66, '%', 0],[31.0, 50, 'K', 0],[147.0, 300, 'K', 2],[150.0, 2.2, 'x', 2],[159.0, 50, 'K', 2],[251.0, 1670, '%', 5],[262.0, 2, 'K', 5]

Cd3As2
###Negative Magnetoresistance in Dirac Semimetal Cd3As2|Hui Li,Hongtao He,Hai-Zhou Lu,Huachen Zhang,Hongchao Liu,Rong Ma,Zhiyong Fan,Shun-Qing Shen,Jiannong Wang###
(17677, 17680)
 We have found that carrierdensities of our Cd3As2 samples obey an Arrheniuss<missing VAR> law, decreasing from3.0x<missing VAR>1017 cm-3 at 300 K to 2.2x1016 cm-3 below 50 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 66, '%', 2],[84.0, 50, 'K', 2],[29.0, 300, 'K', 0],[32.0, 2.2, 'x', 0],[41.0, 50, 'K', 0],[133.0, 1670, '%', 3],[144.0, 2, 'K', 3]

ZrSiS
###Extremely large and significantly anisotropic magnetoresistance in ZrSiS single crystals|Yang-Yang Lv,Bin-Bin Zhang,Xiao Li,Shu-Hua Yao,Y. B. Chen,Jian Zhou,Shan-Tao Zhang,Ming-Hui Lu,Yan-Feng Chen###
(17879, 17881)
Extremely large and significantly anisotropic magnetoresistance in ZrSiS single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 2, 'K', 2],[95.0, 9, 'T', 2]

WTe2
###Extremely large and significantly anisotropic magnetoresistance in ZrSiS single crystals|Yang-Yang Lv,Bin-Bin Zhang,Xiao Li,Shu-Hua Yao,Y. B. Chen,Jian Zhou,Shan-Tao Zhang,Ming-Hui Lu,Yan-Feng Chen###
(17913, 17915)
 Recently, the extremely large magnetoresistance observed in transition metaltelluride, like WTe2, attracted much attention because of the potentialapplications in magnetic sensor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 2, 'K', 1],[61.0, 9, 'T', 1]

ZrSiS
###Extremely large and significantly anisotropic magnetoresistance in ZrSiS single crystals|Yang-Yang Lv,Bin-Bin Zhang,Xiao Li,Shu-Hua Yao,Y. B. Chen,Jian Zhou,Shan-Tao Zhang,Ming-Hui Lu,Yan-Feng Chen###
(17991, 17993)
 Here we report the observation of extremelylarge magnetoresistance as 3.0times104 % measured at 2 K and 9 T magneticfield aligned along [001]-ZrSiS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 2, 'K', 0],[15.0, 9, 'T', 0]

ZrSiS
###Extremely large and significantly anisotropic magnetoresistance in ZrSiS single crystals|Yang-Yang Lv,Bin-Bin Zhang,Xiao Li,Shu-Hua Yao,Y. B. Chen,Jian Zhou,Shan-Tao Zhang,Ming-Hui Lu,Yan-Feng Chen###
(18045, 18047)
 The significant magnetoresistance change(1.4times104 %) can be obtained when the magnetic field is titled from[001] to [011]-ZrSiS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 2, 'K', 1],[69.0, 9, 'T', 1]

ZrSiS
###Extremely large and significantly anisotropic magnetoresistance in ZrSiS single crystals|Yang-Yang Lv,Bin-Bin Zhang,Xiao Li,Shu-Hua Yao,Y. B. Chen,Jian Zhou,Shan-Tao Zhang,Ming-Hui Lu,Yan-Feng Chen###
(18060, 18062)
 These abnormal magnetoresistance behaviors in ZrSiS canbe understood by electron-hole compensation and the open orbital of Fermisurface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 2, 'K', 2],[84.0, 9, 'T', 2]

ZrSiS
###Extremely large and significantly anisotropic magnetoresistance in ZrSiS single crystals|Yang-Yang Lv,Bin-Bin Zhang,Xiao Li,Shu-Hua Yao,Y. B. Chen,Jian Zhou,Shan-Tao Zhang,Ming-Hui Lu,Yan-Feng Chen###
(18109, 18111)
 Because of these superior MR properties, ZrSiS may be used in thenovel magnetic sensors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 2, 'K', 3],[133.0, 9, 'T', 3]

In
###Valley-Contrasting Orbital Magnetic Moment Induced Negative Magnetoresistance|Hailong Zhou,Cong Xiao,Qian Niu###
(18291, 18291)
 In particular, giant negativemagnetoresistance is achieved after one of the two valleys is depleted by themagnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi1.5Sb0.5Te1.8Se1.2/CoFe
###Anisotropic magnetoresistance in topological insulator Bi1.5Sb0.5Te1.8Se1.2/CoFe heterostructures|B. Xia,P. Ren,Azat Sulaev,Z. P. Li,P. Liu,Z. L. Dong,L. Wang###
(18395, 18405)
Anisotropic magnetoresistance in topological insulator Bi1.5Sb0.5Te1.8Se1.2/CoFe heterostructures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Bi1.5Sb0.5Te1.8Se1.2/CoFe
###Anisotropic magnetoresistance in topological insulator Bi1.5Sb0.5Te1.8Se1.2/CoFe heterostructures|B. Xia,P. Ren,Azat Sulaev,Z. P. Li,P. Liu,Z. L. Dong,L. Wang###
(18511, 18521)
 Here, we report a novel in-plane anisotropicmagnetoresistance in topological insulator Bi1.5Sb0.5Te1.8Se1.2/CoFeheterostructures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Bi1.5Sb0.5Te1.8Se1.2/CoFe
###Anisotropic magnetoresistance in topological insulator Bi1.5Sb0.5Te1.8Se1.2/CoFe heterostructures|B. Xia,P. Ren,Azat Sulaev,Z. P. Li,P. Liu,Z. L. Dong,L. Wang###
(18547, 18557)
 To explain the novel effect, we propose that theBi1.5Sb0.5Te1.8Se1.2/CoFe heterostructure forms a spin-valve or Giantmagnetoresistance device due to spin-momentum locking.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Bi1.5Sb0.5Te1.8Se1.2/CoFe
###Anisotropic magnetoresistance in topological insulator Bi1.5Sb0.5Te1.8Se1.2/CoFe heterostructures|B. Xia,P. Ren,Azat Sulaev,Z. P. Li,P. Liu,Z. L. Dong,L. Wang###
(18623, 18633)
 The novel in-planeanisotropic magnetoresistance can be explained as a Giant magnetoresistanceeffect of the Bi1.5Sb0.5Te1.8Se1.2/CoFe heterostructures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Au
###Anomalous Hall-like transverse magnetoresistance in Au thin films on Y$_3$Fe$_5$O$_{12}$|Tobias Kosub,Saül Vélez,Juan M. Gomez-Perez,Luis E. Hueso,Jürgen Faßbender,Fèlix Casanova,Denys Makarov###
(18658, 18658)
Anomalous Hall-like transverse magnetoresistance in Au thin films on Y3Fe5O12.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Y3Fe5O12
###Anomalous Hall-like transverse magnetoresistance in Au thin films on Y$_3$Fe$_5$O$_{12}$|Tobias Kosub,Saül Vélez,Juan M. Gomez-Perez,Luis E. Hueso,Jürgen Faßbender,Fèlix Casanova,Denys Makarov###
(18666, 18671)
Anomalous Hall-like transverse magnetoresistance in Au thin films on Y3Fe5O12.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Anomalous Hall-like transverse magnetoresistance in Au thin films on Y$_3$Fe$_5$O$_{12}$|Tobias Kosub,Saül Vélez,Juan M. Gomez-Perez,Luis E. Hueso,Jürgen Faßbender,Fèlix Casanova,Denys Makarov###
(18729, 18729)
 In this work, longitudinal andtransverse magnetoresistances are measured in a pure gold thin film on theferrimagnetic insulator Y3Fe5O12 (Yttrium Iron Garnet, YIG).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Y3Fe5O12
###Anomalous Hall-like transverse magnetoresistance in Au thin films on Y$_3$Fe$_5$O$_{12}$|Tobias Kosub,Saül Vélez,Juan M. Gomez-Perez,Luis E. Hueso,Jürgen Faßbender,Fèlix Casanova,Denys Makarov###
(18770, 18775)
 In this work, longitudinal andtransverse magnetoresistances are measured in a pure gold thin film on theferrimagnetic insulator Y3Fe5O12 (Yttrium Iron Garnet, YIG).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YI
###Anomalous Hall-like transverse magnetoresistance in Au thin films on Y$_3$Fe$_5$O$_{12}$|Tobias Kosub,Saül Vélez,Juan M. Gomez-Perez,Luis E. Hueso,Jürgen Faßbender,Fèlix Casanova,Denys Makarov###
(18785, 18786)
 In this work, longitudinal andtransverse magnetoresistances are measured in a pure gold thin film on theferrimagnetic insulator Y3Fe5O12 (Yttrium Iron Garnet, YIG).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YI
###Anomalous Hall-like transverse magnetoresistance in Au thin films on Y$_3$Fe$_5$O$_{12}$|Tobias Kosub,Saül Vélez,Juan M. Gomez-Perez,Luis E. Hueso,Jürgen Faßbender,Fèlix Casanova,Denys Makarov###
(18821, 18822)
 We showthat both the longitudinal and transverse magnetoresistances havequantitatively consistent scaling in YIG<missing VAR>/Au and in a YIG<missing VAR>/Pt reference systemwhen applying the Spin Hall magnetoresistance framework.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Au
###Anomalous Hall-like transverse magnetoresistance in Au thin films on Y$_3$Fe$_5$O$_{12}$|Tobias Kosub,Saül Vélez,Juan M. Gomez-Perez,Luis E. Hueso,Jürgen Faßbender,Fèlix Casanova,Denys Makarov###
(18825, 18825)
 We showthat both the longitudinal and transverse magnetoresistances havequantitatively consistent scaling in YIG<missing VAR>/Au and in a YIG<missing VAR>/Pt reference systemwhen applying the Spin Hall magnetoresistance framework.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YI
###Anomalous Hall-like transverse magnetoresistance in Au thin films on Y$_3$Fe$_5$O$_{12}$|Tobias Kosub,Saül Vélez,Juan M. Gomez-Perez,Luis E. Hueso,Jürgen Faßbender,Fèlix Casanova,Denys Makarov###
(18833, 18834)
 We showthat both the longitudinal and transverse magnetoresistances havequantitatively consistent scaling in YIG<missing VAR>/Au and in a YIG<missing VAR>/Pt reference systemwhen applying the Spin Hall magnetoresistance framework.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Anomalous Hall-like transverse magnetoresistance in Au thin films on Y$_3$Fe$_5$O$_{12}$|Tobias Kosub,Saül Vélez,Juan M. Gomez-Perez,Luis E. Hueso,Jürgen Faßbender,Fèlix Casanova,Denys Makarov###
(18837, 18837)
 We showthat both the longitudinal and transverse magnetoresistances havequantitatively consistent scaling in YIG<missing VAR>/Au and in a YIG<missing VAR>/Pt reference systemwhen applying the Spin Hall magnetoresistance framework.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

No
###Anomalous Hall-like transverse magnetoresistance in Au thin films on Y$_3$Fe$_5$O$_{12}$|Tobias Kosub,Saül Vélez,Juan M. Gomez-Perez,Luis E. Hueso,Jürgen Faßbender,Fèlix Casanova,Denys Makarov###
(18859, 18859)
 No contribution of ananomalous Hall effect due to the magnetic proximity effect is evident.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0
Abstract does not contain any numbers.

CuCo
###Microstructural Changes Influencing the Magnetoresistive Behavior of Bulk Nanocrystalline Materials|Stefan Wurster,Martin Stueckler,Lukas Weissitsch,Timo Mueller,Andrea Bachmaier###
(19043, 19044)
 Thermally treated CuComaterials show larger giant magnetoresistance after annealing for 1 h at 300C,while for CuFe this annealing temperature is too high and decreases themagnetoresistive properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 1, 'h', 0],[21.0, 300, 'C', 0]

CuFe
###Microstructural Changes Influencing the Magnetoresistive Behavior of Bulk Nanocrystalline Materials|Stefan Wurster,Martin Stueckler,Lukas Weissitsch,Timo Mueller,Andrea Bachmaier###
(19073, 19074)
 Thermally treated CuComaterials show larger giant magnetoresistance after annealing for 1 h at 300C,while for CuFe this annealing temperature is too high and decreases themagnetoresistive properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 1, 'h', 0],[8.0, 300, 'C', 0]

TaS3
###Activated and quantum creep of the charge-density waves in magnetic field in {\it o}-TaS$_3$|I. A. Cohn,S. V. Zaitsev-Zotov###
(19445, 19447)
Activated and quantum creep of the charge-density waves in magnetic field in it o<missing VAR>-TaS3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TaS3
###Activated and quantum creep of the charge-density waves in magnetic field in {\it o}-TaS$_3$|I. A. Cohn,S. V. Zaitsev-Zotov###
(19485, 19487)
 We demonstrate that magnetoresistance of creeping charge-density waves in thequasi-one dimensional conductor it o<missing VAR>-TaS3 changes its character from anegative parabolic at T<missing VAR>gtrsim 10 K where it obeys 1/T<missing VAR>2 law to a weaklytemperature dependent negative nearly linear one at lower temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Activated and quantum creep of the charge-density waves in magnetic field in {\it o}-TaS$_3$|I. A. Cohn,S. V. Zaitsev-Zotov###
(19511, 19511)
 We demonstrate that magnetoresistance of creeping charge-density waves in thequasi-one dimensional conductor it o<missing VAR>-TaS3 changes its character from anegative parabolic at T<missing VAR>gtrsim 10 K where it obeys 1/T<missing VAR>2 law to a weaklytemperature dependent negative nearly linear one at lower temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Activated and quantum creep of the charge-density waves in magnetic field in {\it o}-TaS$_3$|I. A. Cohn,S. V. Zaitsev-Zotov###
(19586, 19586)
 Thedominant contribution into the negative parabolic magnetoresistance comes frommagnetic field induced splitting of the CD<missing VAR>W order parameter.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Activated and quantum creep of the charge-density waves in magnetic field in {\it o}-TaS$_3$|I. A. Cohn,S. V. Zaitsev-Zotov###
(19588, 19588)
 Thedominant contribution into the negative parabolic magnetoresistance comes frommagnetic field induced splitting of the CD<missing VAR>W order parameter.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Activated and quantum creep of the charge-density waves in magnetic field in {\it o}-TaS$_3$|I. A. Cohn,S. V. Zaitsev-Zotov###
(19608, 19608)
 The linearmagnetoresistance arises due to CD<missing VAR>W quantum interference similar to thescenario of negative linear magnetoresistance in single-electron systems.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Activated and quantum creep of the charge-density waves in magnetic field in {\it o}-TaS$_3$|I. A. Cohn,S. V. Zaitsev-Zotov###
(19610, 19610)
 The linearmagnetoresistance arises due to CD<missing VAR>W quantum interference similar to thescenario of negative linear magnetoresistance in single-electron systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si/SiGe
###Coexistence of Weak Localization and a Metallic Phase in Si/SiGe Quantum Wells|V. Senz,T. Heinzel,T. Ihn,K. Ensslin,G. Dehlinger,D. Gruetzmacher,U. Gennser###
(19668, 19671)
Coexistence of Weak Localization and a Metallic Phase in Si/SiGe Quantum Wells.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Si/SiGe
###Coexistence of Weak Localization and a Metallic Phase in Si/SiGe Quantum Wells|V. Senz,T. Heinzel,T. Ihn,K. Ensslin,G. Dehlinger,D. Gruetzmacher,U. Gennser###
(19688, 19691)
 Magnetoresistivity measurements on p<missing VAR>-type Si/SiGe quantum wells reveal thecoexistence of a metallic behavior and weak localization.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

In
###Coexistence of Weak Localization and a Metallic Phase in Si/SiGe Quantum Wells|V. Senz,T. Heinzel,T. Ihn,K. Ensslin,G. Dehlinger,D. Gruetzmacher,U. Gennser###
(19761, 19761)
 In the insulating phase, a positivemagnetoresistivity emerges close to B0, possibly related to spin-orbitinteractions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B0
###Coexistence of Weak Localization and a Metallic Phase in Si/SiGe Quantum Wells|V. Senz,T. Heinzel,T. Ihn,K. Ensslin,G. Dehlinger,D. Gruetzmacher,U. Gennser###
(19783, 19784)
 In the insulating phase, a positivemagnetoresistivity emerges close to B0, possibly related to spin-orbitinteractions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###A possible role of D^- band in hopping conductivity and metal-insulator transition in 2D structures|V. I. Kozub,N. V. Agrinskaya,S. I. Khondaker,I. Shlimak###
(19938, 19938)
 Experimental studies of hopping magnetoresistance forSi delta doped GaAs/AlGaAs heterostructure give additional evidences for themodel.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 2, 'D', 3],[54.0, 2, 'D', 2]

GaAs/AlGaAs
###A possible role of D^- band in hopping conductivity and metal-insulator transition in 2D structures|V. I. Kozub,N. V. Agrinskaya,S. I. Khondaker,I. Shlimak###
(19944, 19949)
 Experimental studies of hopping magnetoresistance forSi delta doped GaAs/AlGaAs heterostructure give additional evidences for themodel.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[107.0, 2, 'D', 3],[60.0, 2, 'D', 2]

O
###Comment on "Magnetoresistance and differential conductance in mutliwalled carbon nanotubes"|C. Schonenberger,A. Bachtold###
(19998, 19998)
 Jeong-O Lee et al.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 61, ',', 3]

B
###Comment on "Magnetoresistance and differential conductance in mutliwalled carbon nanotubes"|C. Schonenberger,A. Bachtold###
(20014, 20014)
 B, 61, R<missing VAR>16 362 (2000)] reportedmagnetoresistance and differential conductance measurements of multiwalledcarbon nanotubes.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 61, ',', 0]

GaMnAs
###Anisotropic Magnetoresistance in GaMnAs films|K. Y. Wang,K. W. Edmonds,R. P. Campion,L. X. Zhao,A. C. Neumann,C. T. Foxon,B. L. Gallagher,P. C. Main###
(20301, 20303)
Anisotropic Magnetoresistance in GaMnAs films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga1-x
###Anisotropic Magnetoresistance in GaMnAs films|K. Y. Wang,K. W. Edmonds,R. P. Campion,L. X. Zhao,A. C. Neumann,C. T. Foxon,B. L. Gallagher,P. C. Main###
(20320, 20323)
 The magnetoresistance in a series of Ga1-xMnxAs samples with 0.2 < x<missing VAR> < 0.8have been measured for three mutually orthogonal orientations of the externalmagnetic field.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

As
###Anisotropic Magnetoresistance in GaMnAs films|K. Y. Wang,K. W. Edmonds,R. P. Campion,L. X. Zhao,A. C. Neumann,C. T. Foxon,B. L. Gallagher,P. C. Main###
(20325, 20325)
 The magnetoresistance in a series of Ga1-xMnxAs samples with 0.2 < x<missing VAR> < 0.8have been measured for three mutually orthogonal orientations of the externalmagnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Anisotropic Magnetoresistance in GaMnAs films|K. Y. Wang,K. W. Edmonds,R. P. Campion,L. X. Zhao,A. C. Neumann,C. T. Foxon,B. L. Gallagher,P. C. Main###
(20387, 20387)
 The anisotropy magnetoresistance decreases with increasing ofthe Mn content, which means that the magnetic disorder or defects scatteringincreases with increasing of Mn content.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Anisotropic Magnetoresistance in GaMnAs films|K. Y. Wang,K. W. Edmonds,R. P. Campion,L. X. Zhao,A. C. Neumann,C. T. Foxon,B. L. Gallagher,P. C. Main###
(20419, 20419)
 The anisotropy magnetoresistance decreases with increasing ofthe Mn content, which means that the magnetic disorder or defects scatteringincreases with increasing of Mn content.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Anisotropic Magnetoresistance in GaMnAs films|K. Y. Wang,K. W. Edmonds,R. P. Campion,L. X. Zhao,A. C. Neumann,C. T. Foxon,B. L. Gallagher,P. C. Main###
(20445, 20445)
 And also the magneto-crystallineanisotropy increases with increasing of Mn concentration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Anomalous Low-Field Classical Magnetoresistance in Two Dimensions|Alexander Dmitriev,Michel Dyakonov,Remi Jullien###
(20511, 20511)
 At lowmagnetic fields, we find for the first time a negative magnetoresistanceproportional to B.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Anomalous Low-Field Classical Magnetoresistance in Two Dimensions|Alexander Dmitriev,Michel Dyakonov,Remi Jullien###
(20544, 20544)
 At lowmagnetic fields, we find for the first time a negative magnetoresistanceproportional to B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Linear in-plane magnetoconductance and spin susceptibility of a 2D electron gas on a vicinal silicon surface|Y. Y. Proskuryakov,Z. D. Kvon,A. K. Savchenko###
(20634, 20634)
 In this work we have studied the parallel magnetoresistance of a 2DEG near avicinal silicon surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 2, 'D', 1],[21.0, 2, 'DEG', 0]

B
###Linear in-plane magnetoconductance and spin susceptibility of a 2D electron gas on a vicinal silicon surface|Y. Y. Proskuryakov,Z. D. Kvon,A. K. Savchenko###
(20693, 20693)
 An unusual, linear magnetoconductance is observed inthe fields up to B  15 T<missing VAR>, which we explain by the effect of spin olarizationon impurity scattering.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 2, 'D', 2],[38.0, 2, 'DEG', 1]

EuB6
###Magnetic polarons and magnetoresistance in EuB6|M. J. Calderon,L. G. L. Wegener,P. B. Littlewood###
(20913, 20915)
Magnetic polarons and magnetoresistance in EuB6.
Featurization terminated normally.
0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuB6
###Magnetic polarons and magnetoresistance in EuB6|M. J. Calderon,L. G. L. Wegener,P. B. Littlewood###
(20918, 20920)
 EuB6 is a low carrier density ferromagnet which exhibits largemagnetoresistance, positive or negative depending on temperature.
Featurization terminated normally.
0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuB6
###Magnetic polarons and magnetoresistance in EuB6|M. J. Calderon,L. G. L. Wegener,P. B. Littlewood###
(21013, 21015)
 We find that the fact thatEuB6 is a semimetal has to be taken into account to explain its electronicproperties, including magnetic polarons and magnetoresistance.
Featurization terminated normally.
0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs/InGaAs/GaAs
###Antilocalization and spin-orbit coupling in hole strained GaAs/InGaAs/GaAs quantum well heterostructures|G. M. Minkov,A. A. Sherstobitov,A. V. Germanenko,O. E. Rut,V. A. Larionova,B. N. Zvonkov###
(21082, 21090)
Antilocalization and spin-orbit coupling in hole strained GaAs/InGaAs/GaAs quantum well heterostructures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

F
###Interlayer Aharonov-Bohm interference in tilted magnetic fields in quasi-one-dimensional layered conductors|Benjamin K. Cooper,Victor M. Yakovenko###
(21279, 21279)
 Different types of angular magnetoresistance oscillations inquasi-one-dimensional layered materials, such as organic conductors (TMTSF)2X<missing VAR>,are explained in terms of Aharonov-Bohm interference in interlayer electrontunneling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###Interlayer exchange coupling in (Ga,Mn)As based multilayers|A. D. Giddings,T. Jungwirth,B. L. Gallagher###
(21886, 21886)
Interlayer exchange coupling in (Ga,Mn)As based multilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Interlayer exchange coupling in (Ga,Mn)As based multilayers|A. D. Giddings,T. Jungwirth,B. L. Gallagher###
(21888, 21888)
Interlayer exchange coupling in (Ga,Mn)As based multilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Interlayer exchange coupling in (Ga,Mn)As based multilayers|A. D. Giddings,T. Jungwirth,B. L. Gallagher###
(21890, 21890)
Interlayer exchange coupling in (Ga,Mn)As based multilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Interlayer exchange coupling in (Ga,Mn)As based multilayers|A. D. Giddings,T. Jungwirth,B. L. Gallagher###
(21949, 21949)
 In this work we use a mean-field theory of carrier inducedferromagnetism to explore possible (Ga,Mn)As based multilayer structures thatmight yield antiferromagnetic coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###Interlayer exchange coupling in (Ga,Mn)As based multilayers|A. D. Giddings,T. Jungwirth,B. L. Gallagher###
(21983, 21983)
 In this work we use a mean-field theory of carrier inducedferromagnetism to explore possible (Ga,Mn)As based multilayer structures thatmight yield antiferromagnetic coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Interlayer exchange coupling in (Ga,Mn)As based multilayers|A. D. Giddings,T. Jungwirth,B. L. Gallagher###
(21985, 21985)
 In this work we use a mean-field theory of carrier inducedferromagnetism to explore possible (Ga,Mn)As based multilayer structures thatmight yield antiferromagnetic coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Interlayer exchange coupling in (Ga,Mn)As based multilayers|A. D. Giddings,T. Jungwirth,B. L. Gallagher###
(21987, 21987)
 In this work we use a mean-field theory of carrier inducedferromagnetism to explore possible (Ga,Mn)As based multilayer structures thatmight yield antiferromagnetic coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La2Cu0.97Li0.03O4
###Skyrmions in a Doped Antiferromagnet|I. Raicevic,Dragana Popovic,C. Panagopoulos,L. Benfatto,M. B. Silva Neto,E. S. Choi,T. Sasagawa###
(22209, 22216)
 Magnetization and magnetoresistance have been measured in insulatingantiferromagnetic La2Cu0.97Li0.03O4 over a wide range oftemperatures, magnetic fields, and field orientations.
Featurization terminated normally.
0,0,0.004285714285714286,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Galvanomagnetic effects in graphene|I. I. Boiko###
(22370, 22370)
 In gated, exactly monopolar graphene effect ofmagnetoresistivity vanishes; here Hall-constant does not involve any relaxationcharacteristic in contrast to result obtained for popular method of relaxationtime approximation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaAlO3
###Anomalous magneto-transport at the superconducting interface between LaAlO3 and SrTiO3|M. Sachs,D. Rakhmilevitch,M. Ben Shalom,S. Shefler,A. Palevski,Y. Dagan###
(22460, 22463)
Anomalous magneto-transport at the superconducting interface between LaAlO3 and SrTiO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 8, 'unit', 1],[79.0, 30, 'K', 2]

SrTiO3
###Anomalous magneto-transport at the superconducting interface between LaAlO3 and SrTiO3|M. Sachs,D. Rakhmilevitch,M. Ben Shalom,S. Shefler,A. Palevski,Y. Dagan###
(22467, 22470)
Anomalous magneto-transport at the superconducting interface between LaAlO3 and SrTiO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 8, 'unit', 1],[72.0, 30, 'K', 2]

LaAlO3
###Anomalous magneto-transport at the superconducting interface between LaAlO3 and SrTiO3|M. Sachs,D. Rakhmilevitch,M. Ben Shalom,S. Shefler,A. Palevski,Y. Dagan###
(22507, 22510)
 The magnetoresistance as a function of temperature and field for atomicallyflat interfaces between 8 unit cells of LaAlO3 and SrTiO3 is reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 8, 'unit', 0],[32.0, 30, 'K', 1]

SrTiO3
###Anomalous magneto-transport at the superconducting interface between LaAlO3 and SrTiO3|M. Sachs,D. Rakhmilevitch,M. Ben Shalom,S. Shefler,A. Palevski,Y. Dagan###
(22514, 22517)
 The magnetoresistance as a function of temperature and field for atomicallyflat interfaces between 8 unit cells of LaAlO3 and SrTiO3 is reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 8, 'unit', 0],[25.0, 30, 'K', 1]

As
###Interference oscillations of microwave photoresistance in double quantum wells|S. Wiedmann,G. M. Gusev,O. E. Raichev,T. E. Lamas,A. K. Bakarov,J. C. Portal###
(22696, 22696)
 As a consequence, the magnetoresistance demonstrates theinterference of magneto-intersubband oscillations and conventional microwave-induced resistance oscillations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nb
###Abnormal magnetoresistance behavior in Nb thin film with rectangular antidot lattice|W. J. Zhang,S. K. He,B. H. Li,F. Cheng,B. Xu,Z. C. Wen,W. H. Cao,X. F. Han,S. P. Zhao,X. G. Qiu###
(22753, 22753)
Abnormal magnetoresistance behavior in Nb thin film with rectangular antidot lattice.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nb
###Abnormal magnetoresistance behavior in Nb thin film with rectangular antidot lattice|W. J. Zhang,S. K. He,B. H. Li,F. Cheng,B. Xu,Z. C. Wen,W. H. Cao,X. F. Han,S. P. Zhao,X. G. Qiu###
(22782, 22782)
 Abnormal magnetoresistance behavior is found in superconducting Nb filmsperforated with rectangular arrays of antidots (holes).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magnetoresistance from Fermi Surface Topology|Sheng Nan Zhang,Quan Sheng Wu,Yi Liu,Oleg V. Yazyev###
(23013, 23013)
 In this work, we investigate the transversemagnetoresistance of materials by combining the Fermi surfaces calculated fromfirst principles with the Boltzmann transport theory approach relying on thesemiclassical model and the relaxation time approximation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WP2
###Magnetoresistance from Fermi Surface Topology|Sheng Nan Zhang,Quan Sheng Wu,Yi Liu,Oleg V. Yazyev###
(23273, 23275)
 We then address in detail magnetotransport inthree representative materials (i) copper, a prototypical nearly free-electronmetal characterized by the open Fermi surface that results in an intricateangular magnetoresistance, (ii) bismuth, a topologically trivial semimetal inwhich very large magnetoresistance is known to result from charge-carriercompensation, and (iii) tungsten diphosphide WP2, a recently discovered type-IIWeyl semimetal that holds the record of magnetoresistance in compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Magnetoresistance from Fermi Surface Topology|Sheng Nan Zhang,Quan Sheng Wu,Yi Liu,Oleg V. Yazyev###
(23286, 23287)
 We then address in detail magnetotransport inthree representative materials (i) copper, a prototypical nearly free-electronmetal characterized by the open Fermi surface that results in an intricateangular magnetoresistance, (ii) bismuth, a topologically trivial semimetal inwhich very large magnetoresistance is known to result from charge-carriercompensation, and (iii) tungsten diphosphide WP2, a recently discovered type-IIWeyl semimetal that holds the record of magnetoresistance in compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magnetoresistance from Fermi Surface Topology|Sheng Nan Zhang,Quan Sheng Wu,Yi Liu,Oleg V. Yazyev###
(23311, 23311)
 In allthree cases our calculations show excellent agreement with both the fielddependence of magnetoresistance and its anisotropy measured at lowtemperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi
###Negative Magnetoresistance in Granular Bi - HTSC with Trapped Magnetic Fields|A. A. Sukhanov,V. I. Omelchenko###
(23481, 23481)
Negative Magnetoresistance in Granular Bi - HT<missing VAR>SC with Trapped Magnetic Fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Negative Magnetoresistance in Granular Bi - HTSC with Trapped Magnetic Fields|A. A. Sukhanov,V. I. Omelchenko###
(23485, 23485)
Negative Magnetoresistance in Granular Bi - HT<missing VAR>SC with Trapped Magnetic Fields.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SC
###Negative Magnetoresistance in Granular Bi - HTSC with Trapped Magnetic Fields|A. A. Sukhanov,V. I. Omelchenko###
(23487, 23488)
Negative Magnetoresistance in Granular Bi - HT<missing VAR>SC with Trapped Magnetic Fields.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi
###Negative Magnetoresistance in Granular Bi - HTSC with Trapped Magnetic Fields|A. A. Sukhanov,V. I. Omelchenko###
(23507, 23507)
 Magnetoresistive properties of granular Bi-based HT<missing VAR>SC with trapped magneticfields are investigated in the temperature region near superconductingtransition .
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Negative Magnetoresistance in Granular Bi - HTSC with Trapped Magnetic Fields|A. A. Sukhanov,V. I. Omelchenko###
(23511, 23511)
 Magnetoresistive properties of granular Bi-based HT<missing VAR>SC with trapped magneticfields are investigated in the temperature region near superconductingtransition .
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SC
###Negative Magnetoresistance in Granular Bi - HTSC with Trapped Magnetic Fields|A. A. Sukhanov,V. I. Omelchenko###
(23513, 23514)
 Magnetoresistive properties of granular Bi-based HT<missing VAR>SC with trapped magneticfields are investigated in the temperature region near superconductingtransition .
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFe
###3000 % high-field magnetoresistance in super-lattices of CoFe nanoparticles|Reasmey P. Tan,Julian Carrey,Marc Respaud,Celine Desvaux,Philippe Renaud,Bruno Chaudret###
(23774, 23775)
3000 % high-field magnetoresistance in super-lattices of CoFe nanoparticles.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 10, 'K', 3],[136.0, 3, 'd', 4],[200.0, 1.8, 'K', 6]

CoFe
###3000 % high-field magnetoresistance in super-lattices of CoFe nanoparticles|Reasmey P. Tan,Julian Carrey,Marc Respaud,Celine Desvaux,Philippe Renaud,Bruno Chaudret###
(23803, 23804)
 We report on magnetotransport measurements on millimetre-large super-latticesof CoFe nanoparticles surrounded by an organic layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 10, 'K', 2],[107.0, 3, 'd', 3],[171.0, 1.8, 'K', 5]

In
###Linear magnetoresistance in commercial n-type silicon due to inhomogeneous doping|Nicholas Porter,Christopher Marrows###
(24418, 24418)
 In fact, most observations match the semiclassical prediction of amagnetoresistance that is quadratic at low fields before saturating.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[238.0, 8, 'T', 3],[254.0, 35, 'K', 3]

InSb
###Linear magnetoresistance in commercial n-type silicon due to inhomogeneous doping|Nicholas Porter,Christopher Marrows###
(24499, 24500)
 However, anon-saturating linear magnetoresistance has been observed in exoticsemiconductors such as silver chalcogenides, lightly-doped InSb, N-doped InAs,MnAs-GaAs composites, PrFeAsO, and epitaxial graphene.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 8, 'T', 2],[172.0, 35, 'K', 2]

N
###Linear magnetoresistance in commercial n-type silicon due to inhomogeneous doping|Nicholas Porter,Christopher Marrows###
(24503, 24503)
 However, anon-saturating linear magnetoresistance has been observed in exoticsemiconductors such as silver chalcogenides, lightly-doped InSb, N-doped InAs,MnAs-GaAs composites, PrFeAsO, and epitaxial graphene.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 8, 'T', 2],[169.0, 35, 'K', 2]

InAs
###Linear magnetoresistance in commercial n-type silicon due to inhomogeneous doping|Nicholas Porter,Christopher Marrows###
(24507, 24508)
 However, anon-saturating linear magnetoresistance has been observed in exoticsemiconductors such as silver chalcogenides, lightly-doped InSb, N-doped InAs,MnAs-GaAs composites, PrFeAsO, and epitaxial graphene.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 8, 'T', 2],[164.0, 35, 'K', 2]

MnAs
###Linear magnetoresistance in commercial n-type silicon due to inhomogeneous doping|Nicholas Porter,Christopher Marrows###
(24512, 24513)
 However, anon-saturating linear magnetoresistance has been observed in exoticsemiconductors such as silver chalcogenides, lightly-doped InSb, N-doped InAs,MnAs-GaAs composites, PrFeAsO, and epitaxial graphene.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 8, 'T', 2],[159.0, 35, 'K', 2]

GaAs
###Linear magnetoresistance in commercial n-type silicon due to inhomogeneous doping|Nicholas Porter,Christopher Marrows###
(24515, 24516)
 However, anon-saturating linear magnetoresistance has been observed in exoticsemiconductors such as silver chalcogenides, lightly-doped InSb, N-doped InAs,MnAs-GaAs composites, PrFeAsO, and epitaxial graphene.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 8, 'T', 2],[156.0, 35, 'K', 2]

PrFeAsO
###Linear magnetoresistance in commercial n-type silicon due to inhomogeneous doping|Nicholas Porter,Christopher Marrows###
(24521, 24524)
 However, anon-saturating linear magnetoresistance has been observed in exoticsemiconductors such as silver chalcogenides, lightly-doped InSb, N-doped InAs,MnAs-GaAs composites, PrFeAsO, and epitaxial graphene.
Featurization terminated normally.
0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 8, 'T', 2],[148.0, 35, 'K', 2]

Si
###Linear magnetoresistance in commercial n-type silicon due to inhomogeneous doping|Nicholas Porter,Christopher Marrows###
(24714, 24714)
 This physical picture may well offer insights into the largemagnetoresistances recently observed in n<missing VAR>-type and p<missing VAR>-type Si in the non-ohmicregime.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 8, 'T', 1],[42.0, 35, 'K', 1]

TaS3
###Anisotropic magnetoresistance of charge-density wave in $o$-TaS$_3$|Katsuhiko Inagaki,Toru Matsuura,Masakatsu Tsubota,Shinya Uji,Tatsuya Honma,Satoshi Tanda###
(24752, 24754)
Anisotropic magnetoresistance of charge-density wave in o<missing VAR>-TaS3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 4.2, 'K', 1],[52.0, 5.2, 'T', 1]

C
###Anisotropic magnetoresistance of charge-density wave in $o$-TaS$_3$|Katsuhiko Inagaki,Toru Matsuura,Masakatsu Tsubota,Shinya Uji,Tatsuya Honma,Satoshi Tanda###
(24776, 24776)
 We report the magnetoresistance of a charge-density wave (CD<missing VAR>W) in o<missing VAR>-TaS3whiskers at 4.2 K under a magnetic field up to 5.2 T.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 4.2, 'K', 0],[30.0, 5.2, 'T', 0]

W
###Anisotropic magnetoresistance of charge-density wave in $o$-TaS$_3$|Katsuhiko Inagaki,Toru Matsuura,Masakatsu Tsubota,Shinya Uji,Tatsuya Honma,Satoshi Tanda###
(24778, 24778)
 We report the magnetoresistance of a charge-density wave (CD<missing VAR>W) in o<missing VAR>-TaS3whiskers at 4.2 K under a magnetic field up to 5.2 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 4.2, 'K', 0],[28.0, 5.2, 'T', 0]

TaS3
###Anisotropic magnetoresistance of charge-density wave in $o$-TaS$_3$|Katsuhiko Inagaki,Toru Matsuura,Masakatsu Tsubota,Shinya Uji,Tatsuya Honma,Satoshi Tanda###
(24785, 24787)
 We report the magnetoresistance of a charge-density wave (CD<missing VAR>W) in o<missing VAR>-TaS3whiskers at 4.2 K under a magnetic field up to 5.2 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 4.2, 'K', 0],[19.0, 5.2, 'T', 0]

C
###Anisotropic magnetoresistance of charge-density wave in $o$-TaS$_3$|Katsuhiko Inagaki,Toru Matsuura,Masakatsu Tsubota,Shinya Uji,Tatsuya Honma,Satoshi Tanda###
(24957, 24957)
 The observed anisotropy maycome from difference in interchain coupling of adjacent CD<missing VAR>Ws along the a- andb<missing VAR>-axes.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 4.2, 'K', 4],[151.0, 5.2, 'T', 4]

C
###Anisotropic magnetoresistance of charge-density wave in $o$-TaS$_3$|Katsuhiko Inagaki,Toru Matsuura,Masakatsu Tsubota,Shinya Uji,Tatsuya Honma,Satoshi Tanda###
(24999, 24999)
 Comparison of the anisotropy to the scanning tunneling microscopeimage of CD<missing VAR>Ws allows us to provide a simple picture to explain themagnetoresistance in terms of delocalization of quantum interference of CD<missing VAR>Wsextending over the b-c plane.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[206.0, 4.2, 'K', 5],[193.0, 5.2, 'T', 5]

C
###Anisotropic magnetoresistance of charge-density wave in $o$-TaS$_3$|Katsuhiko Inagaki,Toru Matsuura,Masakatsu Tsubota,Shinya Uji,Tatsuya Honma,Satoshi Tanda###
(25042, 25042)
 Comparison of the anisotropy to the scanning tunneling microscopeimage of CD<missing VAR>Ws allows us to provide a simple picture to explain themagnetoresistance in terms of delocalization of quantum interference of CD<missing VAR>Wsextending over the b-c plane.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[249.0, 4.2, 'K', 5],[236.0, 5.2, 'T', 5]

WTe2
###Anisotropic Magnetotransport and Exotic Longitudinal Linear Magnetoresistance in WTe2 Crystals|Yanfei Zhao,Haiwen Liu,Jiaqiang Yan,Wei An,Jun Liu,Xi Zhang,Hua Jiang,Qing Li,Yong Wang,Xin-Zheng Li,David Mandrus,X. C. Xie,Minghu Pan,Jian Wang###
(25084, 25086)
Anisotropic Magnetotransport and Exotic Longitudinal Linear Magnetoresistance in WTe2 Crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[195.0, 1200, '%', 4],[206.0, 2, 'K', 4]

WTe2
###Anisotropic Magnetotransport and Exotic Longitudinal Linear Magnetoresistance in WTe2 Crystals|Yanfei Zhao,Haiwen Liu,Jiaqiang Yan,Wei An,Jun Liu,Xi Zhang,Hua Jiang,Qing Li,Yong Wang,Xin-Zheng Li,David Mandrus,X. C. Xie,Minghu Pan,Jian Wang###
(25091, 25093)
 WTe2 semimetal, as a typical layered transition-metal dichalcogenide, hasrecently attracted much attention due to the extremely large, non-saturatingparabolic magnetoresistance in perpendicular field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 1200, '%', 3],[199.0, 2, 'K', 3]

WTe2
###Anisotropic Magnetotransport and Exotic Longitudinal Linear Magnetoresistance in WTe2 Crystals|Yanfei Zhao,Haiwen Liu,Jiaqiang Yan,Wei An,Jun Liu,Xi Zhang,Hua Jiang,Qing Li,Yong Wang,Xin-Zheng Li,David Mandrus,X. C. Xie,Minghu Pan,Jian Wang###
(25181, 25183)
 Here, we report asystematic study of the angular dependence of the magnetoresistance in WTe2single crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 1200, '%', 2],[109.0, 2, 'K', 2]

WTe2
###Anisotropic Magnetotransport and Exotic Longitudinal Linear Magnetoresistance in WTe2 Crystals|Yanfei Zhao,Haiwen Liu,Jiaqiang Yan,Wei An,Jun Liu,Xi Zhang,Hua Jiang,Qing Li,Yong Wang,Xin-Zheng Li,David Mandrus,X. C. Xie,Minghu Pan,Jian Wang###
(25258, 25260)
Surprisingly, when the applied field is parallel to the tungsten chains ofWTe2, an exotic large longitudinal linear magnetoresistance as high as 1200% at15 T<missing VAR> and 2 K is identified.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 1200, '%', 0],[32.0, 2, 'K', 0]

YSb
###Origin of the Extremely Large Magnetoresistance in the Semimetal YSb|J. Xu,N. J. Ghimire,J. S. Jiang,Z. L. Xiao,A. S. Botana,Y. L. Wang,Y. Hao,J. E. Pearson,W. K. Kwok###
(25452, 25453)
Origin of the Extremely Large Magnetoresistance in the Semimetal YSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YSb
###Origin of the Extremely Large Magnetoresistance in the Semimetal YSb|J. Xu,N. J. Ghimire,J. S. Jiang,Z. L. Xiao,A. S. Botana,Y. L. Wang,Y. Hao,J. E. Pearson,W. K. Kwok###
(25535, 25536)
 Recent spectroscopic experiments, however, reveal that YSb withnon-saturating magnetoresistance is uncompensated, questioning the e-hcompensation scenario for XMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Origin of the Extremely Large Magnetoresistance in the Semimetal YSb|J. Xu,N. J. Ghimire,J. S. Jiang,Z. L. Xiao,A. S. Botana,Y. L. Wang,Y. Hao,J. E. Pearson,W. K. Kwok###
(25599, 25599)
 Here we demonstrate with magnetoresistivity andangle dependent Shubnikov - de Haas (SdH) quantum oscillation measurements thatYSb does have nearly perfect e-h compensation, with a density ratio of 0.95for electrons and holes.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YSb
###Origin of the Extremely Large Magnetoresistance in the Semimetal YSb|J. Xu,N. J. Ghimire,J. S. Jiang,Z. L. Xiao,A. S. Botana,Y. L. Wang,Y. Hao,J. E. Pearson,W. K. Kwok###
(25611, 25612)
 Here we demonstrate with magnetoresistivity andangle dependent Shubnikov - de Haas (SdH) quantum oscillation measurements thatYSb does have nearly perfect e-h compensation, with a density ratio of 0.95for electrons and holes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Origin of the Extremely Large Magnetoresistance in the Semimetal YSb|J. Xu,N. J. Ghimire,J. S. Jiang,Z. L. Xiao,A. S. Botana,Y. L. Wang,Y. Hao,J. E. Pearson,W. K. Kwok###
(25677, 25677)
 The density and mobility anisotropy of the chargecarriers revealed in the SdH experiments allow us to quantitatively describethe magnetoresistance with an anisotropic multi-band model that includescontributions from all Fermi pockets.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Ir2O7
###Possible Scale Invariant Linear Magnetoresistance in Pyrochlore Iridates Bi$_2$Ir$_2$O$_7$|Jiun-Haw Chu,Jian Liu,Han Zhang,Kyle Noordhoek,Scott. C. Riggs,Maxwell Shapiro,Claudy Ryan Serero,Di Yi,M. Melissa,S. J. Suresha,C. Frontera,E. Arenholz,Ashvin Vishwanath,Xavi Marti,I. R. Fisher,R. Ramesh###
(26162, 26167)
Possible Scale Invariant Linear Magnetoresistance in Pyrochlore Iridates Bi2Ir2O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6363636363636364,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 35, 'Tesla', 2]

Bi2Ir2O7
###Possible Scale Invariant Linear Magnetoresistance in Pyrochlore Iridates Bi$_2$Ir$_2$O$_7$|Jiun-Haw Chu,Jian Liu,Han Zhang,Kyle Noordhoek,Scott. C. Riggs,Maxwell Shapiro,Claudy Ryan Serero,Di Yi,M. Melissa,S. J. Suresha,C. Frontera,E. Arenholz,Ashvin Vishwanath,Xavi Marti,I. R. Fisher,R. Ramesh###
(26209, 26214)
 We report the observation of a linear magnetoresistance in single crystalsand epitaxial thin films of the pyrochlore iridate Bi2Ir2O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6363636363636364,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 35, 'Tesla', 1]

As
###Possible Scale Invariant Linear Magnetoresistance in Pyrochlore Iridates Bi$_2$Ir$_2$O$_7$|Jiun-Haw Chu,Jian Liu,Han Zhang,Kyle Noordhoek,Scott. C. Riggs,Maxwell Shapiro,Claudy Ryan Serero,Di Yi,M. Melissa,S. J. Suresha,C. Frontera,E. Arenholz,Ashvin Vishwanath,Xavi Marti,I. R. Fisher,R. Ramesh###
(26256, 26256)
 As temperature increases, the linearfield dependence gradually evolves to a quadratic field dependence.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 35, 'Tesla', 1]

Bi2Ir2O7
###Possible Scale Invariant Linear Magnetoresistance in Pyrochlore Iridates Bi$_2$Ir$_2$O$_7$|Jiun-Haw Chu,Jian Liu,Han Zhang,Kyle Noordhoek,Scott. C. Riggs,Maxwell Shapiro,Claudy Ryan Serero,Di Yi,M. Melissa,S. J. Suresha,C. Frontera,E. Arenholz,Ashvin Vishwanath,Xavi Marti,I. R. Fisher,R. Ramesh###
(26304, 26309)
 Thetemperature and field dependence of magnetoresistance of Bi2Ir2O7bears strikingly resemblance to the scale invariant magnetoresistance observedin the strange metal phase in high Tc cuprates.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6363636363636364,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 35, 'Tesla', 2]

Tc
###Possible Scale Invariant Linear Magnetoresistance in Pyrochlore Iridates Bi$_2$Ir$_2$O$_7$|Jiun-Haw Chu,Jian Liu,Han Zhang,Kyle Noordhoek,Scott. C. Riggs,Maxwell Shapiro,Claudy Ryan Serero,Di Yi,M. Melissa,S. J. Suresha,C. Frontera,E. Arenholz,Ashvin Vishwanath,Xavi Marti,I. R. Fisher,R. Ramesh###
(26345, 26345)
 Thetemperature and field dependence of magnetoresistance of Bi2Ir2O7bears strikingly resemblance to the scale invariant magnetoresistance observedin the strange metal phase in high Tc cuprates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 35, 'Tesla', 2]

Bi2Ir2O7
###Possible Scale Invariant Linear Magnetoresistance in Pyrochlore Iridates Bi$_2$Ir$_2$O$_7$|Jiun-Haw Chu,Jian Liu,Han Zhang,Kyle Noordhoek,Scott. C. Riggs,Maxwell Shapiro,Claudy Ryan Serero,Di Yi,M. Melissa,S. J. Suresha,C. Frontera,E. Arenholz,Ashvin Vishwanath,Xavi Marti,I. R. Fisher,R. Ramesh###
(26362, 26367)
 However, the residualresistivity of Bi2Ir2O7 is more than two orders of magnitude higherthan the curpates.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6363636363636364,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 35, 'Tesla', 3]

In
###Giant Current-Perpendicular-to-Plane Magnetoresistance in Multilayer Graphene as Grown on Nickel|S. C. Bodepudi,A. P. Singh,Sandipan Pramanik###
(26521, 26521)
 In this work we report a novelcurrent-perpendicular-to-plane magnetoresistance effect in multilayer grapheneas grown on a catalytic nickel surface by chemical vapor deposition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 4, '%', 1],[110.0, 2, 'D', 2]

I
###Giant Current-Perpendicular-to-Plane Magnetoresistance in Multilayer Graphene as Grown on Nickel|S. C. Bodepudi,A. P. Singh,Sandipan Pramanik###
(26740, 26740)
 The observed magnetoresistance is extremely high ascompared to other known materials systems for similar temperature and fieldrange and can be qualitatively explained within the framework of interlayermagnetoresistance (ILMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 4, '%', 2],[109.0, 2, 'D', 1]

In
###Tunneling Magnetoresistance in Junctions Composed of Ferromagnets and Time-Reversal Invariant Topological Superconductors|Zhongbo Yan,Shaolong Wan###
(26810, 26810)
 In this work, we show that tunnelingmagnetoresistance can also emerge in junctions composed of ferromagnets andtime-reversal invariant topological superconductors without spin-rotationsymmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Se3
###Large linear magnetoresistance from neutral defects in Bi$_2$Se$_3$|Devendra Kumar,Archana Lakhani###
(27149, 27152)
Large linear magnetoresistance from neutral defects in Bi2Se3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 4, 'T', 3],[195.0, 3, 'D', 5]

Bi2Se3
###Large linear magnetoresistance from neutral defects in Bi$_2$Se$_3$|Devendra Kumar,Archana Lakhani###
(27159, 27162)
 The chalcogenide Bi2Se3 can attain the three dimensional (3D) Diracsemimetal state under the influence of strain and microstrain.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 4, 'T', 2],[185.0, 3, 'D', 4]

Bi2Se3
###Large linear magnetoresistance from neutral defects in Bi$_2$Se$_3$|Devendra Kumar,Archana Lakhani###
(27226, 27229)
 Here we reportthe presnece of large linear magnetoresistance in such a Bi2Se3 crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 4, 'T', 1],[118.0, 3, 'D', 3]

S
###Gate-tunable large magnetoresistance in an all-semiconductor spin-transistor-like device|Martin Oltscher,Franz Eberle,Thomas Kuczmik,Andreas Bayer,Dieter Schuh,Dominique Bougeard,Mariusz Ciorga,Dieter Weiss###
(27534, 27534)
 A large spin-dependent and electric field-tunable magnetoresistance of atwo-dimensional electron system (2DES) is a key ingredient for the realizationof many novel concepts for spin-based electronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 2, 'DES', 2],[167.0, 80, '%', 2]

(SC)
###Gate-tunable large magnetoresistance in an all-semiconductor spin-transistor-like device|Martin Oltscher,Franz Eberle,Thomas Kuczmik,Andreas Bayer,Dieter Schuh,Dominique Bougeard,Mariusz Ciorga,Dieter Weiss###
(27599, 27602)
 The lowmagnetoresistance observed during the last decades in devices with lateralsemiconducting (SC) transport channels between ferromagnetic (FM) source (S)and drain (D) contacts has been the main obstacle for realizing spin fieldeffect transistor proposals.
Featurization successful!
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 2, 'DES', 1],[99.0, 80, '%', 1]

F
###Gate-tunable large magnetoresistance in an all-semiconductor spin-transistor-like device|Martin Oltscher,Franz Eberle,Thomas Kuczmik,Andreas Bayer,Dieter Schuh,Dominique Bougeard,Mariusz Ciorga,Dieter Weiss###
(27613, 27613)
 The lowmagnetoresistance observed during the last decades in devices with lateralsemiconducting (SC) transport channels between ferromagnetic (FM) source (S)and drain (D) contacts has been the main obstacle for realizing spin fieldeffect transistor proposals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 2, 'DES', 1],[88.0, 80, '%', 1]

(S)
###Gate-tunable large magnetoresistance in an all-semiconductor spin-transistor-like device|Martin Oltscher,Franz Eberle,Thomas Kuczmik,Andreas Bayer,Dieter Schuh,Dominique Bougeard,Mariusz Ciorga,Dieter Weiss###
(27619, 27621)
 The lowmagnetoresistance observed during the last decades in devices with lateralsemiconducting (SC) transport channels between ferromagnetic (FM) source (S)and drain (D) contacts has been the main obstacle for realizing spin fieldeffect transistor proposals.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 2, 'DES', 1],[80.0, 80, '%', 1]

F
###Gate-tunable large magnetoresistance in an all-semiconductor spin-transistor-like device|Martin Oltscher,Franz Eberle,Thomas Kuczmik,Andreas Bayer,Dieter Schuh,Dominique Bougeard,Mariusz Ciorga,Dieter Weiss###
(27755, 27755)
The large magnetoresistance is due to finite electric field effects at theFM<missing VAR>/SC interface, which boost spin-to-charge conversion.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 2, 'DES', 1],[54.0, 80, '%', 1]

SC
###Gate-tunable large magnetoresistance in an all-semiconductor spin-transistor-like device|Martin Oltscher,Franz Eberle,Thomas Kuczmik,Andreas Bayer,Dieter Schuh,Dominique Bougeard,Mariusz Ciorga,Dieter Weiss###
(27758, 27759)
The large magnetoresistance is due to finite electric field effects at theFM<missing VAR>/SC interface, which boost spin-to-charge conversion.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 2, 'DES', 1],[57.0, 80, '%', 1]

LaAlO3/SrTiO3
###Interfacial Rashba magnetoresistance of two-dimensional electron gas at LaAlO$_3$/SrTiO$_3$ interface|Kulothungasagaran Narayanapillai,Gyungchoon Go,Rajagopalan Ramaswamy,Kalon Gopinadhan,Dongwook Go,Hyun-Woo Lee,Thirumalai Venkatesan,Kyung-Jin Lee,Hyunsoo Yang###
(27854, 27862)
Interfacial Rashba magnetoresistance of two-dimensional electron gas at LaAlO3/SrTiO3 interface.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

LaAlO3/SrTiO3
###Interfacial Rashba magnetoresistance of two-dimensional electron gas at LaAlO$_3$/SrTiO$_3$ interface|Kulothungasagaran Narayanapillai,Gyungchoon Go,Rajagopalan Ramaswamy,Kalon Gopinadhan,Dongwook Go,Hyun-Woo Lee,Thirumalai Venkatesan,Kyung-Jin Lee,Hyunsoo Yang###
(27894, 27902)
 We report the angular dependence of magnetoresistance in two-dimensionalelectron gas at LaAlO3/SrTiO3 interface.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Sr2IrO4
###Revealing Controllable Anisotropic Magnetoresistance in Spin Orbit Coupled Antiferromagnet Sr2IrO4|Chengliang Lu,Bin Gao,Haowen Wang,Wei Wang,Songliu Yuan,Shuai Dong,Jun-Ming Liu###
(28159, 28163)
Revealing Controllable Anisotropic Magnetoresistance in Spin Orbit Coupled Antiferromagnet Sr2IrO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr2IrO4/SrTiO3
###Revealing Controllable Anisotropic Magnetoresistance in Spin Orbit Coupled Antiferromagnet Sr2IrO4|Chengliang Lu,Bin Gao,Haowen Wang,Wei Wang,Songliu Yuan,Shuai Dong,Jun-Ming Liu###
(28313, 28322)
 Here we demonstrate magnetic fielddriven contour rotation of the fourfold anisotropic magnetoresistance in bareantiferromagnetic Sr2IrO4/SrTiO3 (001) thin films hosting a strong spin-orbitcoupling induced Jeff1/2 Mott state.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Ir
###Revealing Controllable Anisotropic Magnetoresistance in Spin Orbit Coupled Antiferromagnet Sr2IrO4|Chengliang Lu,Bin Gao,Haowen Wang,Wei Wang,Songliu Yuan,Shuai Dong,Jun-Ming Liu###
(28404, 28404)
 Through first principles calculations, theband-gap engineering due to rotation of the Ir isospins is revealed to beresponsible for these emergent phenomena, different from the traditionalscenario where relatively more conductive state was obtained usually whenmagnetic field was applied along the magnetic easy axis.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoSi2
###Extreme magnetoresistance induced by Zeeman effect-driven electron-hole compensation and topological protection in MoSi$_2$|M. Matin,R. Mondal,N. Barman,A. Thamizhavel,S. K. Dhar###
(28567, 28569)
Extreme magnetoresistance induced by Zeeman effect-driven electron-hole compensation and topological protection in MoSi2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 2, 'K', 3],[155.0, 14, 'T', 3]

MoSi2
###Extreme magnetoresistance induced by Zeeman effect-driven electron-hole compensation and topological protection in MoSi$_2$|M. Matin,R. Mondal,N. Barman,A. Thamizhavel,S. K. Dhar###
(28694, 28696)
 Here, we present a single crystal studyon MoSi2, which exhibits extremely large magnetoresistance, approachingalmost 107 % at 2 K and 14 T magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 2, 'K', 0],[28.0, 14, 'T', 0]

MoSi2
###Extreme magnetoresistance induced by Zeeman effect-driven electron-hole compensation and topological protection in MoSi$_2$|M. Matin,R. Mondal,N. Barman,A. Thamizhavel,S. K. Dhar###
(28752, 28754)
 It is found that theelectron-hole compensation level in MoSi2 evolves with magnetic field, whichis resulted from strong Zeeman effect, and found beneficial in boosting thelarge non-saturating magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 2, 'K', 1],[28.0, 14, 'T', 1]

MoSi2
###Extreme magnetoresistance induced by Zeeman effect-driven electron-hole compensation and topological protection in MoSi$_2$|M. Matin,R. Mondal,N. Barman,A. Thamizhavel,S. K. Dhar###
(28902, 28904)
 The ultra-large carrier mobility of the topologically protectedcharge carriers reinforces the magnetoresistance of MoSi2 to an unprecedentedlarge value.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 2, 'K', 3],[178.0, 14, 'T', 3]

In
###Hopping magneto-transport via nonzero orbital momentum states and organic magnetoresistance|Alexandre S. Alexandrov,Valentin A. Dediu,Victor V. Kabanov###
(29231, 29231)
 In hopping magnetoresistance of doped insulators, an applied magnetic fieldshrinks the electron (hole) s<missing VAR>-wave function of a donor or an acceptor and thisreduces the overlap between hopping sites resulting in the positivemagnetoresistance quadratic in a weak magnetic field, B.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[170.0, 0, ',', 2]

B
###Hopping magneto-transport via nonzero orbital momentum states and organic magnetoresistance|Alexandre S. Alexandrov,Valentin A. Dediu,Victor V. Kabanov###
(29322, 29322)
 In hopping magnetoresistance of doped insulators, an applied magnetic fieldshrinks the electron (hole) s<missing VAR>-wave function of a donor or an acceptor and thisreduces the overlap between hopping sites resulting in the positivemagnetoresistance quadratic in a weak magnetic field, B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 0, ',', 2]

B
###Hopping magneto-transport via nonzero orbital momentum states and organic magnetoresistance|Alexandre S. Alexandrov,Valentin A. Dediu,Victor V. Kabanov###
(29483, 29483)
 This together with amagnetic-field dependence of injection/ionization rates results in a negativeweak-field magnetoresistance, which is linear in B when the orbital degeneracyis lifted.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 0, ',', 1]

O
###Hopping magneto-transport via nonzero orbital momentum states and organic magnetoresistance|Alexandre S. Alexandrov,Valentin A. Dediu,Victor V. Kabanov###
(29537, 29537)
 The theory provides a possible explanation of a large low-fieldmagnetoresistance in disordered pi-conjugated organic materials (OMAR).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 0, ',', 2]

In
###Magnetoresistance in relativistic hydrodynamics without anomalies|Andrew Baumgartner,Andreas Karch,Andrew Lucas###
(29710, 29710)
 In contrast with a Galilean-invariant fluid,the resistivity tensor of a dirty relativistic fluid exhibits similar angulardependence to negative magnetoresistance, even when the constitutive relationsand momentum relaxation rate are isotropic.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin Hall Magnetoresistance in Metallic Bilayers with In-plane Magnetized Ferromagnets|Łukasz Karwacki,Krzysztof Grochot,Stanisław Łazarski,Witold Skowroński,Jarosław Kanak,Wiesław Powroźnik,Józef Barnaś,Feliks Stobiecki,Tomasz Stobiecki###
(30539, 30539)
Spin Hall Magnetoresistance in Metallic Bilayers with In-plane Magnetized Ferromagnets.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin Hall Magnetoresistance in Metallic Bilayers with In-plane Magnetized Ferromagnets|Łukasz Karwacki,Krzysztof Grochot,Stanisław Łazarski,Witold Skowroński,Jarosław Kanak,Wiesław Powroźnik,Józef Barnaś,Feliks Stobiecki,Tomasz Stobiecki###
(30569, 30569)
 We revisit the theory and experiment on spin Hall magnetoresistance (SMR) inbilayers consisting of a heavy metal (H) coupled to in-plane magnetizedferromagnetic metal (F), and determine contributions to the magnetoresistancedue to SMR and anisotropic magnetoresistance (AMR) in four different bilayersystems W/textCo20textFe60textB20, W/Co,textCo20textFe60textB20/Pt, and Co/Pt.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(H)
###Spin Hall Magnetoresistance in Metallic Bilayers with In-plane Magnetized Ferromagnets|Łukasz Karwacki,Krzysztof Grochot,Stanisław Łazarski,Witold Skowroński,Jarosław Kanak,Wiesław Powroźnik,Józef Barnaś,Feliks Stobiecki,Tomasz Stobiecki###
(30589, 30591)
 We revisit the theory and experiment on spin Hall magnetoresistance (SMR) inbilayers consisting of a heavy metal (H) coupled to in-plane magnetizedferromagnetic metal (F), and determine contributions to the magnetoresistancedue to SMR and anisotropic magnetoresistance (AMR) in four different bilayersystems W/textCo20textFe60textB20, W/Co,textCo20textFe60textB20/Pt, and Co/Pt.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(F)
###Spin Hall Magnetoresistance in Metallic Bilayers with In-plane Magnetized Ferromagnets|Łukasz Karwacki,Krzysztof Grochot,Stanisław Łazarski,Witold Skowroński,Jarosław Kanak,Wiesław Powroźnik,Józef Barnaś,Feliks Stobiecki,Tomasz Stobiecki###
(30608, 30610)
 We revisit the theory and experiment on spin Hall magnetoresistance (SMR) inbilayers consisting of a heavy metal (H) coupled to in-plane magnetizedferromagnetic metal (F), and determine contributions to the magnetoresistancedue to SMR and anisotropic magnetoresistance (AMR) in four different bilayersystems W/textCo20textFe60textB20, W/Co,textCo20textFe60textB20/Pt, and Co/Pt.
Featurization successful!
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin Hall Magnetoresistance in Metallic Bilayers with In-plane Magnetized Ferromagnets|Łukasz Karwacki,Krzysztof Grochot,Stanisław Łazarski,Witold Skowroński,Jarosław Kanak,Wiesław Powroźnik,Józef Barnaś,Feliks Stobiecki,Tomasz Stobiecki###
(30630, 30630)
 We revisit the theory and experiment on spin Hall magnetoresistance (SMR) inbilayers consisting of a heavy metal (H) coupled to in-plane magnetizedferromagnetic metal (F), and determine contributions to the magnetoresistancedue to SMR and anisotropic magnetoresistance (AMR) in four different bilayersystems W/textCo20textFe60textB20, W/Co,textCo20textFe60textB20/Pt, and Co/Pt.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Spin Hall Magnetoresistance in Metallic Bilayers with In-plane Magnetized Ferromagnets|Łukasz Karwacki,Krzysztof Grochot,Stanisław Łazarski,Witold Skowroński,Jarosław Kanak,Wiesław Powroźnik,Józef Barnaś,Feliks Stobiecki,Tomasz Stobiecki###
(30657, 30657)
 We revisit the theory and experiment on spin Hall magnetoresistance (SMR) inbilayers consisting of a heavy metal (H) coupled to in-plane magnetizedferromagnetic metal (F), and determine contributions to the magnetoresistancedue to SMR and anisotropic magnetoresistance (AMR) in four different bilayersystems W/textCo20textFe60textB20, W/Co,textCo20textFe60textB20/Pt, and Co/Pt.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co20
###Spin Hall Magnetoresistance in Metallic Bilayers with In-plane Magnetized Ferromagnets|Łukasz Karwacki,Krzysztof Grochot,Stanisław Łazarski,Witold Skowroński,Jarosław Kanak,Wiesław Powroźnik,Józef Barnaś,Feliks Stobiecki,Tomasz Stobiecki###
(30660, 30661)
 We revisit the theory and experiment on spin Hall magnetoresistance (SMR) inbilayers consisting of a heavy metal (H) coupled to in-plane magnetizedferromagnetic metal (F), and determine contributions to the magnetoresistancedue to SMR and anisotropic magnetoresistance (AMR) in four different bilayersystems W/textCo20textFe60textB20, W/Co,textCo20textFe60textB20/Pt, and Co/Pt.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe60
###Spin Hall Magnetoresistance in Metallic Bilayers with In-plane Magnetized Ferromagnets|Łukasz Karwacki,Krzysztof Grochot,Stanisław Łazarski,Witold Skowroński,Jarosław Kanak,Wiesław Powroźnik,Józef Barnaś,Feliks Stobiecki,Tomasz Stobiecki###
(30663, 30664)
 We revisit the theory and experiment on spin Hall magnetoresistance (SMR) inbilayers consisting of a heavy metal (H) coupled to in-plane magnetizedferromagnetic metal (F), and determine contributions to the magnetoresistancedue to SMR and anisotropic magnetoresistance (AMR) in four different bilayersystems W/textCo20textFe60textB20, W/Co,textCo20textFe60textB20/Pt, and Co/Pt.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B20
###Spin Hall Magnetoresistance in Metallic Bilayers with In-plane Magnetized Ferromagnets|Łukasz Karwacki,Krzysztof Grochot,Stanisław Łazarski,Witold Skowroński,Jarosław Kanak,Wiesław Powroźnik,Józef Barnaś,Feliks Stobiecki,Tomasz Stobiecki###
(30666, 30667)
 We revisit the theory and experiment on spin Hall magnetoresistance (SMR) inbilayers consisting of a heavy metal (H) coupled to in-plane magnetizedferromagnetic metal (F), and determine contributions to the magnetoresistancedue to SMR and anisotropic magnetoresistance (AMR) in four different bilayersystems W/textCo20textFe60textB20, W/Co,textCo20textFe60textB20/Pt, and Co/Pt.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W/Co
###Spin Hall Magnetoresistance in Metallic Bilayers with In-plane Magnetized Ferromagnets|Łukasz Karwacki,Krzysztof Grochot,Stanisław Łazarski,Witold Skowroński,Jarosław Kanak,Wiesław Powroźnik,Józef Barnaś,Feliks Stobiecki,Tomasz Stobiecki###
(30670, 30672)
 We revisit the theory and experiment on spin Hall magnetoresistance (SMR) inbilayers consisting of a heavy metal (H) coupled to in-plane magnetizedferromagnetic metal (F), and determine contributions to the magnetoresistancedue to SMR and anisotropic magnetoresistance (AMR) in four different bilayersystems W/textCo20textFe60textB20, W/Co,textCo20textFe60textB20/Pt, and Co/Pt.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Co20
###Spin Hall Magnetoresistance in Metallic Bilayers with In-plane Magnetized Ferromagnets|Łukasz Karwacki,Krzysztof Grochot,Stanisław Łazarski,Witold Skowroński,Jarosław Kanak,Wiesław Powroźnik,Józef Barnaś,Feliks Stobiecki,Tomasz Stobiecki###
(30677, 30678)
 We revisit the theory and experiment on spin Hall magnetoresistance (SMR) inbilayers consisting of a heavy metal (H) coupled to in-plane magnetizedferromagnetic metal (F), and determine contributions to the magnetoresistancedue to SMR and anisotropic magnetoresistance (AMR) in four different bilayersystems W/textCo20textFe60textB20, W/Co,textCo20textFe60textB20/Pt, and Co/Pt.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe60
###Spin Hall Magnetoresistance in Metallic Bilayers with In-plane Magnetized Ferromagnets|Łukasz Karwacki,Krzysztof Grochot,Stanisław Łazarski,Witold Skowroński,Jarosław Kanak,Wiesław Powroźnik,Józef Barnaś,Feliks Stobiecki,Tomasz Stobiecki###
(30680, 30681)
 We revisit the theory and experiment on spin Hall magnetoresistance (SMR) inbilayers consisting of a heavy metal (H) coupled to in-plane magnetizedferromagnetic metal (F), and determine contributions to the magnetoresistancedue to SMR and anisotropic magnetoresistance (AMR) in four different bilayersystems W/textCo20textFe60textB20, W/Co,textCo20textFe60textB20/Pt, and Co/Pt.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B20/Pt
###Spin Hall Magnetoresistance in Metallic Bilayers with In-plane Magnetized Ferromagnets|Łukasz Karwacki,Krzysztof Grochot,Stanisław Łazarski,Witold Skowroński,Jarosław Kanak,Wiesław Powroźnik,Józef Barnaś,Feliks Stobiecki,Tomasz Stobiecki###
(30683, 30686)
 We revisit the theory and experiment on spin Hall magnetoresistance (SMR) inbilayers consisting of a heavy metal (H) coupled to in-plane magnetizedferromagnetic metal (F), and determine contributions to the magnetoresistancedue to SMR and anisotropic magnetoresistance (AMR) in four different bilayersystems W/textCo20textFe60textB20, W/Co,textCo20textFe60textB20/Pt, and Co/Pt.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Co/Pt
###Spin Hall Magnetoresistance in Metallic Bilayers with In-plane Magnetized Ferromagnets|Łukasz Karwacki,Krzysztof Grochot,Stanisław Łazarski,Witold Skowroński,Jarosław Kanak,Wiesław Powroźnik,Józef Barnaś,Feliks Stobiecki,Tomasz Stobiecki###
(30691, 30693)
 We revisit the theory and experiment on spin Hall magnetoresistance (SMR) inbilayers consisting of a heavy metal (H) coupled to in-plane magnetizedferromagnetic metal (F), and determine contributions to the magnetoresistancedue to SMR and anisotropic magnetoresistance (AMR) in four different bilayersystems W/textCo20textFe60textB20, W/Co,textCo20textFe60textB20/Pt, and Co/Pt.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

PtBi2
###Huge linear magnetoresistance due to open orbits in $γ$-PtBi$_2$|Beilun Wu,Víctor Barrena,Hermann Suderow,Isabel Guillamón###
(30860, 30862)
Huge linear magnetoresistance due to open orbits in -PtBi2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PtBi2
###Huge linear magnetoresistance due to open orbits in $γ$-PtBi$_2$|Beilun Wu,Víctor Barrena,Hermann Suderow,Isabel Guillamón###
(31016, 31018)
 Here we present a systematic study of themagnetoresistance in single-crystal gamma-PtBi2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Huge linear magnetoresistance due to open orbits in $γ$-PtBi$_2$|Beilun Wu,Víctor Barrena,Hermann Suderow,Isabel Guillamón###
(31082, 31082)
 In between, there is one specific angle where themagnetoresistance is perfectly linear with the magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PtBi2
###Huge linear magnetoresistance due to open orbits in $γ$-PtBi$_2$|Beilun Wu,Víctor Barrena,Hermann Suderow,Isabel Guillamón###
(31169, 31171)
 We show that thelinear dependence of the nonsaturating magnetoresistance is due to theformation of open orbits in the Fermi surface of gamma-PtBi2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Anomalous linear magnetoresistance in high quality crystalline lead thin films|Yi Liu,Yue Tang,Ziqiao Wang,Chaofei Liu,Cheng Chen,Jian Wang###
(31293, 31293)
 In this paper, we show that thecrystalline interfacial striped incommensurate layer can increase the qualityof the lead films and significantly enhance the magnitude of magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaAlO3/SrTiO3
###Anisotropic magnetotransport in LaAlO$_3$/SrTiO$_3$ nanostructures|M. S. Prasad,G. Schmidt###
(31537, 31545)
Anisotropic magnetotransport in LaAlO3/SrTiO3 nanostructures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

LaAlO3/SrTiO3
###Anisotropic magnetotransport in LaAlO$_3$/SrTiO$_3$ nanostructures|M. S. Prasad,G. Schmidt###
(31575, 31583)
 A number of recent studies indicate that the charge conduction of theLaAlO3/SrTiO3 interface at low temperature is confined to filaments whichare linked to structural domain walls in the SrTiO3 with drasticconsequences for example for the temperature dependence of local transportproperties.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

SrTiO3
###Anisotropic magnetotransport in LaAlO$_3$/SrTiO$_3$ nanostructures|M. S. Prasad,G. Schmidt###
(31620, 31623)
 A number of recent studies indicate that the charge conduction of theLaAlO3/SrTiO3 interface at low temperature is confined to filaments whichare linked to structural domain walls in the SrTiO3 with drasticconsequences for example for the temperature dependence of local transportproperties.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Anisotropic magnetotransport in LaAlO$_3$/SrTiO$_3$ nanostructures|M. S. Prasad,G. Schmidt###
(31770, 31770)
 Warming up nanostructures above the structural phasetransition temperature (105K) results in the significant change in MR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Anisotropic magnetotransport in LaAlO$_3$/SrTiO$_3$ nanostructures|M. S. Prasad,G. Schmidt###
(31893, 31896)
 The results suggest thatdomain walls that are differently oriented with respect to the surface exhibitdifferent respective magnetoresistance and the total magnetoresistance is aresult of a random domain wall pattern formed during the structural phasetransition in the SrTiO3 at cool down.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Intervalley Tunneling and Crossover from the Positive to Negative Interlayer Magnetoresistance in Quasi-Two-Dimensional Dirac Fermion System with or without Mass Gap|Takao Morinari###
(32127, 32127)
 As aspecific system, we consider alphaI under high pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Intervalley Tunneling and Crossover from the Positive to Negative Interlayer Magnetoresistance in Quasi-Two-Dimensional Dirac Fermion System with or without Mass Gap|Takao Morinari###
(32142, 32142)
 As aspecific system, we consider alphaI under high pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Topological linear magnetoresistivity and thermoconductivity induced by noncentrosymmetric Berry curvature|Min-Xue Yang,Hai-Dong Li,Wei Luo,Bingfeng Miao,Wei Chen,D. Y. Xing###
(32401, 32401)
 In thiswork, based on the semiclassical Boltzmann formalism and the symmetry analysis,we show that the noncentrosymmetric distribution of the Berry curvaturegenerally results in linear magnetoresistivity and thermoconductivity bothexhibiting the B-scaling behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 2, 'D', 1],[114.0, 3, 'D', 1]

B
###Topological linear magnetoresistivity and thermoconductivity induced by noncentrosymmetric Berry curvature|Min-Xue Yang,Hai-Dong Li,Wei Luo,Bingfeng Miao,Wei Chen,D. Y. Xing###
(32473, 32473)
 In thiswork, based on the semiclassical Boltzmann formalism and the symmetry analysis,we show that the noncentrosymmetric distribution of the Berry curvaturegenerally results in linear magnetoresistivity and thermoconductivity bothexhibiting the B-scaling behavior.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 2, 'D', 1],[42.0, 3, 'D', 1]

MnBi2Te4
###Topological linear magnetoresistivity and thermoconductivity induced by noncentrosymmetric Berry curvature|Min-Xue Yang,Hai-Dong Li,Wei Luo,Bingfeng Miao,Wei Chen,D. Y. Xing###
(32504, 32508)
 We then study such kind of topologicallinear magnetoresistivity in the 2D MnBi2Te4 flakes and the 3Dspin-orbit-coupled electron gas, the former showing good agreement with theexperimental observations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 2, 'D', 0],[7.0, 3, 'D', 0]

YI
###Non-local magnetoresistance in YIG/Pt nanostructures|Sebastian T. B. Goennenwein,Richard Schlitz,Matthias Pernpeintner,Matthias Althammer,Rudolf Gross,Hans Huebl###
(32667, 32668)
Non-local magnetoresistance in YIG<missing VAR>/Pt nanostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[170.0, 100, 'nm', 3]

Pt
###Non-local magnetoresistance in YIG/Pt nanostructures|Sebastian T. B. Goennenwein,Richard Schlitz,Matthias Pernpeintner,Matthias Althammer,Rudolf Gross,Hans Huebl###
(32671, 32671)
Non-local magnetoresistance in YIG<missing VAR>/Pt nanostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 100, 'nm', 3]

Pt
###Non-local magnetoresistance in YIG/Pt nanostructures|Sebastian T. B. Goennenwein,Richard Schlitz,Matthias Pernpeintner,Matthias Althammer,Rudolf Gross,Hans Huebl###
(32696, 32696)
 We study the local and non-local magnetoresistance of thin Pt stripsdeposited onto yttrium iron garnet.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 100, 'nm', 2]

Pt
###Non-local magnetoresistance in YIG/Pt nanostructures|Sebastian T. B. Goennenwein,Richard Schlitz,Matthias Pernpeintner,Matthias Althammer,Rudolf Gross,Hans Huebl###
(32740, 32740)
 The local magnetoresistive response,inferred from the voltage drop measured along one given Pt strip uponcurrent-biasing it, shows the characteristic magnetization orientationdependence of the spin Hall magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 100, 'nm', 1]

Pt
###Non-local magnetoresistance in YIG/Pt nanostructures|Sebastian T. B. Goennenwein,Richard Schlitz,Matthias Pernpeintner,Matthias Althammer,Rudolf Gross,Hans Huebl###
(32809, 32809)
 We simultaneously also recordthe non-local voltage appearing along a second, electrically isolated, Ptstrip, separated from the current carrying one by a gap of a few 100 nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 100, 'nm', 0]

In
###Non-local magnetoresistance in YIG/Pt nanostructures|Sebastian T. B. Goennenwein,Richard Schlitz,Matthias Pernpeintner,Matthias Althammer,Rudolf Gross,Hans Huebl###
(32997, 32997)
 In particular, the non-local magnetoresistancevanishes at liquid Helium temperatures, while the spin Hall magnetoresistanceprevails.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[159.0, 100, 'nm', 4]

CoPtCr
###Magnetotransport properties of granular oxide-segregated CoPtCr films for applications in future magnetic memory technology|Morgan Williamson,Maxim Tsoi,Pin-Wei Huang,Ganping Ju,Cheng Wang###
(33056, 33058)
Magnetotransport properties of granular oxide-segregated CoPtCr films for applications in future magnetic memory technology.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[248.0, 50, ',', 3]

CoPtCr
###Magnetotransport properties of granular oxide-segregated CoPtCr films for applications in future magnetic memory technology|Morgan Williamson,Maxim Tsoi,Pin-Wei Huang,Ganping Ju,Cheng Wang###
(33089, 33091)
 Magnetotransport properties of granular oxide-segregated CoPtCr films werestudied on both macroscopic and microscopic length scales by performing bulkand point-contact magnetoresistance measurements, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[215.0, 50, ',', 2]

CoPtCr
###Magnetotransport properties of granular oxide-segregated CoPtCr films for applications in future magnetic memory technology|Morgan Williamson,Maxim Tsoi,Pin-Wei Huang,Ganping Ju,Cheng Wang###
(33341, 33343)
The observed magnetorestive effect could be attributed to a tunnelmagnetoresistance between CoPtCr grains with different coercivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 50, ',', 1]

Bi2Te3
###Spin-dependent scattering induced negative magnetoresistance in topological insulator Bi2Te3 nanowires|Biplab Bhattacharyya,Bahadur Singh,R. P. Aloysius,Reena Yadav,Chenliang Su,Hsin Lin,S. Auluck,Anurag Gupta,T. D. Senguttuvan,Sudhir Husale###
(33470, 33473)
Spin-dependent scattering induced negative magnetoresistance in topological insulator Bi2Te3 nanowires.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, -22, '%', 4],[155.0, 8, 'T', 4],[372.0, 3, 'D', 8],[399.0, 3, 'D', 8]

Bi2Te3
###Spin-dependent scattering induced negative magnetoresistance in topological insulator Bi2Te3 nanowires|Biplab Bhattacharyya,Bahadur Singh,R. P. Aloysius,Reena Yadav,Chenliang Su,Hsin Lin,S. Auluck,Anurag Gupta,T. D. Senguttuvan,Sudhir Husale###
(33540, 33543)
 Here, we report an experimentalobservation of the temperature dependent negative magnetoresistance in Bi2Te3topological insulator (T<missing VAR>I) nanowires at ultralow temperatures (20 m<missing VAR>K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, -22, '%', 2],[85.0, 8, 'T', 2],[302.0, 3, 'D', 6],[329.0, 3, 'D', 6]

I
###Spin-dependent scattering induced negative magnetoresistance in topological insulator Bi2Te3 nanowires|Biplab Bhattacharyya,Bahadur Singh,R. P. Aloysius,Reena Yadav,Chenliang Su,Hsin Lin,S. Auluck,Anurag Gupta,T. D. Senguttuvan,Sudhir Husale###
(33552, 33552)
 Here, we report an experimentalobservation of the temperature dependent negative magnetoresistance in Bi2Te3topological insulator (T<missing VAR>I) nanowires at ultralow temperatures (20 m<missing VAR>K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, -22, '%', 2],[76.0, 8, 'T', 2],[293.0, 3, 'D', 6],[320.0, 3, 'D', 6]

K
###Spin-dependent scattering induced negative magnetoresistance in topological insulator Bi2Te3 nanowires|Biplab Bhattacharyya,Bahadur Singh,R. P. Aloysius,Reena Yadav,Chenliang Su,Hsin Lin,S. Auluck,Anurag Gupta,T. D. Senguttuvan,Sudhir Husale###
(33567, 33567)
 Here, we report an experimentalobservation of the temperature dependent negative magnetoresistance in Bi2Te3topological insulator (T<missing VAR>I) nanowires at ultralow temperatures (20 m<missing VAR>K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, -22, '%', 2],[61.0, 8, 'T', 2],[278.0, 3, 'D', 6],[305.0, 3, 'D', 6]

Ga
###Spin-dependent scattering induced negative magnetoresistance in topological insulator Bi2Te3 nanowires|Biplab Bhattacharyya,Bahadur Singh,R. P. Aloysius,Reena Yadav,Chenliang Su,Hsin Lin,S. Auluck,Anurag Gupta,T. D. Senguttuvan,Sudhir Husale###
(33721, 33721)
 Based on thefirst-principles calculations within a density functional theory framework, wedemonstrate that disorder (substitutional) by Ga ion milling process, which isused to fabricate nanowires, induces local magnetic moments in Bi2Te3 crystalthat can lead to spin-dependent scattering of surface and bulk electrons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, -22, '%', 2],[93.0, 8, 'T', 2],[124.0, 3, 'D', 2],[151.0, 3, 'D', 2]

Bi2Te3
###Spin-dependent scattering induced negative magnetoresistance in topological insulator Bi2Te3 nanowires|Biplab Bhattacharyya,Bahadur Singh,R. P. Aloysius,Reena Yadav,Chenliang Su,Hsin Lin,S. Auluck,Anurag Gupta,T. D. Senguttuvan,Sudhir Husale###
(33754, 33757)
 Based on thefirst-principles calculations within a density functional theory framework, wedemonstrate that disorder (substitutional) by Ga ion milling process, which isused to fabricate nanowires, induces local magnetic moments in Bi2Te3 crystalthat can lead to spin-dependent scattering of surface and bulk electrons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, -22, '%', 2],[126.0, 8, 'T', 2],[88.0, 3, 'D', 2],[115.0, 3, 'D', 2]

LaSrCuO
###Orbital Magnetoresistance in the LaSrCuO System|F. F. Balakirev,I. E. Trofimov,S. Guha,Marta Z. Cieplak,P. Lindenfeld###
(33893, 33896)
Orbital Magnetoresistance in the LaSrCuO System.
Featurization terminated normally.
0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 0.048, 'to', 1],[74.0, 0.275, ',', 1],[143.0, 0.15, 'above', 2],[146.0, 80, 'K', 2]

Sr
###Orbital Magnetoresistance in the LaSrCuO System|F. F. Balakirev,I. E. Trofimov,S. Guha,Marta Z. Cieplak,P. Lindenfeld###
(33948, 33948)
 Measurements of resistivity, Hall effect, and magnetoresistance have beenmade on seven c<missing VAR>-axis oriented thin-film specimens of La(2-x)Sr(x)CuO(4) withvalues of x<missing VAR> from 0.048 to 0.275, and one specimen that also contains Nd.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 0.048, 'to', 0],[22.0, 0.275, ',', 0],[91.0, 0.15, 'above', 1],[94.0, 80, 'K', 1]

Nd
###Orbital Magnetoresistance in the LaSrCuO System|F. F. Balakirev,I. E. Trofimov,S. Guha,Marta Z. Cieplak,P. Lindenfeld###
(33985, 33985)
 Measurements of resistivity, Hall effect, and magnetoresistance have beenmade on seven c<missing VAR>-axis oriented thin-film specimens of La(2-x)Sr(x)CuO(4) withvalues of x<missing VAR> from 0.048 to 0.275, and one specimen that also contains Nd.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 0.048, 'to', 0],[15.0, 0.275, ',', 0],[54.0, 0.15, 'above', 1],[57.0, 80, 'K', 1]

Bi
###Evidence of Vortices on the Insulating Side of the Superconductor-Insulator Transition|N. Markovic,A. M. Mack,G. Martinez-Arizala,C. Christiansen,A. M. Goldman###
(34385, 34385)
 The magnetoresistance of ultrathin insulating films of Bi has been studiedwith magnetic fields applied parallel and perpendicular to the plane of thesample.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Evidence of Vortices on the Insulating Side of the Superconductor-Insulator Transition|N. Markovic,A. M. Mack,G. Martinez-Arizala,C. Christiansen,A. M. Goldman###
(34455, 34455)
 As film thicknesses increase,the magnetoresistance becomes positive, and a difference between valuesmeasured in perpendicular and parallel fields appears, which is a linearfunction of the magnetic field and is positive.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.7Sr0.3MnO3
###Spin polarized tunneling in the half-metallic ferromagnet La0.7Sr0.3MnO3: experiment and theory|P. Raychaudhuri,K. Sheshadri,P. Taneja,S. Bandyopadhyay,P. Ayyub,A. K. Nigam,R. Pinto###
(34608, 34614)
Spin polarized tunneling in the half-metallic ferromagnet La0.7Sr0.3MnO3 experiment and theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.7Sr0.3MnO3
###Spin polarized tunneling in the half-metallic ferromagnet La0.7Sr0.3MnO3: experiment and theory|P. Raychaudhuri,K. Sheshadri,P. Taneja,S. Bandyopadhyay,P. Ayyub,A. K. Nigam,R. Pinto###
(34786, 34792)
 We apply this model to our experimental data on thehalf metallic ferromagnet La0.7Sr0.3MnO3, and find that the theoreticalpredictions agree quite well with the observed dependence of the spin polarizedMR on the spontaneous magnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GdNi
###The magnetoresistance in GdNi: Magnetic-polaronic-like effect near Curie temperature and low temperature sign reversal|R. Mallik,E. V. Sampathkumaran,P. L. Paulose,V. Nagarajan###
(34857, 34858)
The magnetoresistance in GdNi Magnetic-polaronic-like effect near Curie temperature and low temperature sign reversal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 4.2, 'to', 1],[60.0, 300, 'K', 1],[92.0, 70, 'K', 2],[115.0, 80, 'kOe', 2],[126.0, 150, 'K', 2],[141.0, -20, '%', 2],[215.0, 12, 'K', 4]

GdNi
###The magnetoresistance in GdNi: Magnetic-polaronic-like effect near Curie temperature and low temperature sign reversal|R. Mallik,E. V. Sampathkumaran,P. L. Paulose,V. Nagarajan###
(34905, 34906)
 The results of magnetoresistance (Delta rho /rho)measurements in GdNi,in the temperature range 4.2 to 300 K are reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 4.2, 'to', 0],[12.0, 300, 'K', 0],[44.0, 70, 'K', 1],[67.0, 80, 'kOe', 1],[78.0, 150, 'K', 1],[93.0, -20, '%', 1],[167.0, 12, 'K', 3]

Tc
###The magnetoresistance in GdNi: Magnetic-polaronic-like effect near Curie temperature and low temperature sign reversal|R. Mallik,E. V. Sampathkumaran,P. L. Paulose,V. Nagarajan###
(34949, 34949)
 The sign of Delta rho/rho  above the Curie temperature (Tc 70 K) is negative and its magnitude ina magnetic field of 80kOe grows with decreasing temperature below 150 K with apeak value of about -20% at Tc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 4.2, 'to', 1],[31.0, 300, 'K', 1],[1.0, 70, 'K', 0],[24.0, 80, 'kOe', 0],[35.0, 150, 'K', 0],[50.0, -20, '%', 0],[124.0, 12, 'K', 2]

Tc
###The magnetoresistance in GdNi: Magnetic-polaronic-like effect near Curie temperature and low temperature sign reversal|R. Mallik,E. V. Sampathkumaran,P. L. Paulose,V. Nagarajan###
(35005, 35005)
 The sign of Delta rho/rho  above the Curie temperature (Tc 70 K) is negative and its magnitude ina magnetic field of 80kOe grows with decreasing temperature below 150 K with apeak value of about -20% at Tc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 4.2, 'to', 1],[87.0, 300, 'K', 1],[55.0, 70, 'K', 0],[32.0, 80, 'kOe', 0],[21.0, 150, 'K', 0],[6.0, -20, '%', 0],[68.0, 12, 'K', 2]

Gd
###The magnetoresistance in GdNi: Magnetic-polaronic-like effect near Curie temperature and low temperature sign reversal|R. Mallik,E. V. Sampathkumaran,P. L. Paulose,V. Nagarajan###
(35060, 35060)
 These features, qualitatively resembling thosein giant magnetoresistance systems (manganates), are attributed to theformation of some kind of magnetic polarons induced by Gd.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 4.2, 'to', 2],[142.0, 300, 'K', 2],[110.0, 70, 'K', 1],[87.0, 80, 'kOe', 1],[76.0, 150, 'K', 1],[61.0, -20, '%', 1],[13.0, 12, 'K', 1]

In
###Magnetic Domain Walls in Double Exchange Materials|Luis Brey###
(35163, 35163)
 In the doubleexchange model the stiffness has two terms the kinetic energy and the Hartreeterm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, -2, '%', 4]

CPP
###Spin dependent scattering of a domain-wall of controlled size|J. -E. Wegrowe,A. Comment,Y. Jaccard,J. -Ph. Ansermet,N. M. Dempsey,J-P. Nozieres###
(35387, 35389)
 Magnetoresistance measurements in the CPP geometry have been performed onsingle electrodeposited Co nanowires exchange biased on one side by a sputteredamorphous GdCo layer.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Spin dependent scattering of a domain-wall of controlled size|J. -E. Wegrowe,A. Comment,Y. Jaccard,J. -Ph. Ansermet,N. M. Dempsey,J-P. Nozieres###
(35406, 35406)
 Magnetoresistance measurements in the CPP geometry have been performed onsingle electrodeposited Co nanowires exchange biased on one side by a sputteredamorphous GdCo layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GdCo
###Spin dependent scattering of a domain-wall of controlled size|J. -E. Wegrowe,A. Comment,Y. Jaccard,J. -Ph. Ansermet,N. M. Dempsey,J-P. Nozieres###
(35429, 35430)
 Magnetoresistance measurements in the CPP geometry have been performed onsingle electrodeposited Co nanowires exchange biased on one side by a sputteredamorphous GdCo layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Spin dependent scattering of a domain-wall of controlled size|J. -E. Wegrowe,A. Comment,Y. Jaccard,J. -Ph. Ansermet,N. M. Dempsey,J-P. Nozieres###
(35460, 35460)
 This geometry allows the stabilization of a single domainwall in the Co wire, the thickness of which can be controlled by an externalmagnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Spin dependent scattering of a domain-wall of controlled size|J. -E. Wegrowe,A. Comment,Y. Jaccard,J. -Ph. Ansermet,N. M. Dempsey,J-P. Nozieres###
(35510, 35510)
 Comparing magnetization, resistivity, and magnetoresistancestudies of single Co nanowires, of GdCo layers, and of the coupled system,gives evidence for an additional contribution to the magnetoresistance when thedomain wall is compressed by a magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GdCo
###Spin dependent scattering of a domain-wall of controlled size|J. -E. Wegrowe,A. Comment,Y. Jaccard,J. -Ph. Ansermet,N. M. Dempsey,J-P. Nozieres###
(35517, 35518)
 Comparing magnetization, resistivity, and magnetoresistancestudies of single Co nanowires, of GdCo layers, and of the coupled system,gives evidence for an additional contribution to the magnetoresistance when thedomain wall is compressed by a magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Analysis of negative magnetoresistance. Statistics of closed paths. II. Experiment|G. M. Minkov,S. A. Negashev,O. E. Rut,A. V. Germanenko,O. I. Khrykin,V. I. Shashkin,V. M. Danil'tsev###
(35652, 35653)
 II.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 2, 'D', 2],[171.0, 2, 'D', 5]

Bi2Sr2Ca0.8Y0.2Cu2O8
###Negative in-plane and out-of-plane magnetoresistivities in optimally doped Bi2Sr2Ca0.8Y0.2Cu2O8+d single crystal|D. Thopart,A. Wahl,A. Maignan,Ch. Simon###
(35921, 35932)
Negative in-plane and out-of-plane magnetoresistivities in optimally doped Bi2Sr2Ca0.8Y0.2Cu2O8d<missing VAR> single crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.05333333333333334,0,0,0,0,0,0,0,0,0.13333333333333333,0,0,0,0,0,0,0,0,0.13333333333333333,0.013333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Sr2Ca0.8Y0.2Cu2O8
###Negative in-plane and out-of-plane magnetoresistivities in optimally doped Bi2Sr2Ca0.8Y0.2Cu2O8+d single crystal|D. Thopart,A. Wahl,A. Maignan,Ch. Simon###
(35981, 35992)
 Both the in-plane and out-of-plane magnetoresistivities have been measured inthe normal state of an optimally doped Bi2Sr2Ca0.8Y0.2Cu2O8d<missing VAR> single crystalwith a magnetic field applied parallel and perpendicular to the CuO2 planes.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.05333333333333334,0,0,0,0,0,0,0,0,0.13333333333333333,0,0,0,0,0,0,0,0,0.13333333333333333,0.013333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CuO2
###Negative in-plane and out-of-plane magnetoresistivities in optimally doped Bi2Sr2Ca0.8Y0.2Cu2O8+d single crystal|D. Thopart,A. Wahl,A. Maignan,Ch. Simon###
(36020, 36022)
 Both the in-plane and out-of-plane magnetoresistivities have been measured inthe normal state of an optimally doped Bi2Sr2Ca0.8Y0.2Cu2O8d<missing VAR> single crystalwith a magnetic field applied parallel and perpendicular to the CuO2 planes.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###Negative in-plane and out-of-plane magnetoresistivities in optimally doped Bi2Sr2Ca0.8Y0.2Cu2O8+d single crystal|D. Thopart,A. Wahl,A. Maignan,Ch. Simon###
(36081, 36081)
  Whatever the magnetic field and the current directions are, a negativemagnetoresistivity is obtained over a wide range of temperature above thecritical temperature Tc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

AlGaAs/GaAs
###Response of the two-dimensional electron gas of AlGaAs/GaAs heterostructures to parallel magnetic field|V. S. Khrapai,E. V. Deviatov,A. A. Shashkin,V. T. Dolgopolov###
(36166, 36171)
Response of the two-dimensional electron gas of AlGaAs/GaAs heterostructures to parallel magnetic field.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

AlGaAs/GaAs
###Response of the two-dimensional electron gas of AlGaAs/GaAs heterostructures to parallel magnetic field|V. S. Khrapai,E. V. Deviatov,A. A. Shashkin,V. T. Dolgopolov###
(36209, 36214)
 We study the transport properties of the two-dimensional electron gas inAlGaAs/GaAs heterostructures in parallel to the interface magnetic fields atlow temperatures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

At
###Response of the two-dimensional electron gas of AlGaAs/GaAs heterostructures to parallel magnetic field|V. S. Khrapai,E. V. Deviatov,A. A. Shashkin,V. T. Dolgopolov###
(36305, 36305)
 At low electron densities(ns< 5times 1010 cm-2) the experimental data can be describedadequately within spin-related approach while at high ns themagnetoresistance mechanism changes as inferred from ns-independence of thenormalized magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###C-axis negative magnetoresistance and upper critical field of Bi2Sr2CaCu2O8|V. N. Zavaritsky,M. Springford,A. S. Alexandrov###
(36400, 36400)
C-axis negative magnetoresistance and upper critical field of Bi2Sr2CaCu2O8.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 50, 'T', 1]

Bi2Sr2CaCu2O8
###C-axis negative magnetoresistance and upper critical field of Bi2Sr2CaCu2O8|V. N. Zavaritsky,M. Springford,A. S. Alexandrov###
(36418, 36426)
C-axis negative magnetoresistance and upper critical field of Bi2Sr2CaCu2O8.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.06666666666666667,0,0,0,0,0,0,0,0,0.13333333333333333,0,0,0,0,0,0,0,0,0.13333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 50, 'T', 1]

BSCCO
###C-axis negative magnetoresistance and upper critical field of Bi2Sr2CaCu2O8|V. N. Zavaritsky,M. Springford,A. S. Alexandrov###
(36454, 36458)
 The out-of-plane resistance and the resistive upper critical field ofBSCCO-2212 single crystals with Tc91-93 K have been measured in magneticfields up to 50 T over a wide temperature range.
Featurization terminated normally.
0,0,0,0,0.2,0.4,0,0.2,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 50, 'T', 0]

Tc91
###C-axis negative magnetoresistance and upper critical field of Bi2Sr2CaCu2O8|V. N. Zavaritsky,M. Springford,A. S. Alexandrov###
(36468, 36469)
 The out-of-plane resistance and the resistive upper critical field ofBSCCO-2212 single crystals with Tc91-93 K have been measured in magneticfields up to 50 T over a wide temperature range.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 50, 'T', 0]

K
###C-axis negative magnetoresistance and upper critical field of Bi2Sr2CaCu2O8|V. N. Zavaritsky,M. Springford,A. S. Alexandrov###
(36473, 36473)
 The out-of-plane resistance and the resistive upper critical field ofBSCCO-2212 single crystals with Tc91-93 K have been measured in magneticfields up to 50 T over a wide temperature range.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 50, 'T', 0]

Ni
###Magnetoresistance of single-domain ferromagnetic particles|J. Aumentado,V. Chandrasekhar###
(36896, 36896)
 We have performed magnetoresistance measurements on single-domain, submicronelliptical Ni particles using nonmagnetic probes in a four probe geometry atliquid helium temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 15, 'percent', 3]

In
###Magnetoresistance of single-domain ferromagnetic particles|J. Aumentado,V. Chandrasekhar###
(36926, 36926)
 In the smallest particles, the magnetoresistanceshows sharp jumps which are associated with the switching of individualdomains.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 15, 'percent', 2]

Fe/V
###Interlayer exchange coupling and giant magnetoresistance in Fe/V (001) superlattices|A. Broddefalk,R. Mathieu,P. Nordblad,P. Blomqvist,R. Wäppling,J. Lu,E. Olsson###
(37091, 37093)
Interlayer exchange coupling and giant magnetoresistance in Fe/V (001) superlattices.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[106.0, 13, 'atomic', 3],[137.0, 2, 'monolayers', 3],[166.0, 6, 'monolayers', 4],[193.0, 13, 'monolayers', 4]

Fe/V
###Interlayer exchange coupling and giant magnetoresistance in Fe/V (001) superlattices|A. Broddefalk,R. Mathieu,P. Nordblad,P. Blomqvist,R. Wäppling,J. Lu,E. Olsson###
(37112, 37114)
 Magnetization and magnetoresistivity studies of Fe/V (001) superlattices arereported.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[85.0, 13, 'atomic', 2],[116.0, 2, 'monolayers', 2],[145.0, 6, 'monolayers', 3],[172.0, 13, 'monolayers', 3]

B
###Coherent vs incoherent interlayer transport in layered metals|J. Wosnitza,J. Hagel,J. S. Qualls,J. S. Brooks,E. Balthes,D. Schweitzer,J. A. Schlueter,U. Geiser,J. Mohtasham,R. W. Winter,G. L. Gard###
(37404, 37404)
 For kappa-(BEDT-TTF)2I3 we find awell-resolved peak in the angle-dependent magnetoresistance at Theta 90circ (field parallel to the layers).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 2, 'D', 2]

F
###Coherent vs incoherent interlayer transport in layered metals|J. Wosnitza,J. Hagel,J. S. Qualls,J. S. Brooks,E. Balthes,D. Schweitzer,J. A. Schlueter,U. Geiser,J. Mohtasham,R. W. Winter,G. L. Gard###
(37411, 37411)
 For kappa-(BEDT-TTF)2I3 we find awell-resolved peak in the angle-dependent magnetoresistance at Theta 90circ (field parallel to the layers).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 2, 'D', 2]

I3
###Coherent vs incoherent interlayer transport in layered metals|J. Wosnitza,J. Hagel,J. S. Qualls,J. S. Brooks,E. Balthes,D. Schweitzer,J. A. Schlueter,U. Geiser,J. Mohtasham,R. W. Winter,G. L. Gard###
(37414, 37415)
 For kappa-(BEDT-TTF)2I3 we find awell-resolved peak in the angle-dependent magnetoresistance at Theta 90circ (field parallel to the layers).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 2, 'D', 2]

B
###Coherent vs incoherent interlayer transport in layered metals|J. Wosnitza,J. Hagel,J. S. Qualls,J. S. Brooks,E. Balthes,D. Schweitzer,J. A. Schlueter,U. Geiser,J. Mohtasham,R. W. Winter,G. L. Gard###
(37497, 37497)
 This clear-cut proof for the coherentnature of the interlayer transport is absent forbeta-(BEDT-TTF)2SF5CH2CF2SO3.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 2, 'D', 1]

F
###Coherent vs incoherent interlayer transport in layered metals|J. Wosnitza,J. Hagel,J. S. Qualls,J. S. Brooks,E. Balthes,D. Schweitzer,J. A. Schlueter,U. Geiser,J. Mohtasham,R. W. Winter,G. L. Gard###
(37504, 37504)
 This clear-cut proof for the coherentnature of the interlayer transport is absent forbeta-(BEDT-TTF)2SF5CH2CF2SO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 2, 'D', 1]

SF5CH2CF2SO3
###Coherent vs incoherent interlayer transport in layered metals|J. Wosnitza,J. Hagel,J. S. Qualls,J. S. Brooks,E. Balthes,D. Schweitzer,J. A. Schlueter,U. Geiser,J. Mohtasham,R. W. Winter,G. L. Gard###
(37507, 37518)
 This clear-cut proof for the coherentnature of the interlayer transport is absent forbeta-(BEDT-TTF)2SF5CH2CF2SO3.
Featurization terminated normally.
0.125,0,0,0,0,0.125,0,0.1875,0.4375,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 2, 'D', 1]

La
###A comparative study of the magnetic and magnetotransport properties between a metallic (x=0.6) and a semiconducting (x=0.2) member of the solid solution LaNixCo1-xO3|J. Androulakis,N. Katsarakis,Z. Viskadourakis,J. Giapintzakis###
(37619, 37619)
A comparative study of the magnetic and magnetotransport properties between a metallic (x<missing VAR>0.6) and a semiconducting (x<missing VAR>0.2) member of the solid solution LaNixCo1-xO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 0.2, ',', 1]

Co1-xO3
###A comparative study of the magnetic and magnetotransport properties between a metallic (x=0.6) and a semiconducting (x=0.2) member of the solid solution LaNixCo1-xO3|J. Androulakis,N. Katsarakis,Z. Viskadourakis,J. Giapintzakis###
(37621, 37626)
A comparative study of the magnetic and magnetotransport properties between a metallic (x<missing VAR>0.6) and a semiconducting (x<missing VAR>0.2) member of the solid solution LaNixCo1-xO3.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[56.0, 0.2, ',', 1]

La
###A comparative study of the magnetic and magnetotransport properties between a metallic (x=0.6) and a semiconducting (x=0.2) member of the solid solution LaNixCo1-xO3|J. Androulakis,N. Katsarakis,Z. Viskadourakis,J. Giapintzakis###
(37670, 37670)
 We present a comparative study of both the magnetic and magnetotransportproperties for two members of the perovskite solid solution LaNixCo1-xO3(x<missing VAR>0.2, 0.6) located on opposite sides of the chemically inducedmetal-to-insulator transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 0.2, ',', 0]

Co1-xO3
###A comparative study of the magnetic and magnetotransport properties between a metallic (x=0.6) and a semiconducting (x=0.2) member of the solid solution LaNixCo1-xO3|J. Androulakis,N. Katsarakis,Z. Viskadourakis,J. Giapintzakis###
(37672, 37677)
 We present a comparative study of both the magnetic and magnetotransportproperties for two members of the perovskite solid solution LaNixCo1-xO3(x<missing VAR>0.2, 0.6) located on opposite sides of the chemically inducedmetal-to-insulator transition.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[5.0, 0.2, ',', 0]

LaNi0.6Co0.4O3
###A comparative study of the magnetic and magnetotransport properties between a metallic (x=0.6) and a semiconducting (x=0.2) member of the solid solution LaNixCo1-xO3|J. Androulakis,N. Katsarakis,Z. Viskadourakis,J. Giapintzakis###
(37714, 37720)
 LaNi0.6Co0.4O3 exhibits metallic behavior andsmall but negative magnetoresistance, whereas LaNi0.2Co0.8O3 exhibitssemiconducting behavior and giant negative magnetoresistance at lowtemperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08,0.12,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 0.2, ',', 1]

LaNi0.2Co0.8O3
###A comparative study of the magnetic and magnetotransport properties between a metallic (x=0.6) and a semiconducting (x=0.2) member of the solid solution LaNixCo1-xO3|J. Androulakis,N. Katsarakis,Z. Viskadourakis,J. Giapintzakis###
(37742, 37748)
 LaNi0.6Co0.4O3 exhibits metallic behavior andsmall but negative magnetoresistance, whereas LaNi0.2Co0.8O3 exhibitssemiconducting behavior and giant negative magnetoresistance at lowtemperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16,0.04,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 0.2, ',', 1]

B
###Magnetoresistance of a 2D electron gas caused by electron interactions in the transition from the diffusive to the ballistic regime|L. Li,Y. Y. Proskuryakov,A. K. Savchenko,E. H. Linfield,D. A. Ritchie###
(38167, 38167)
 On a high-mobility 2D electron gas we have observed, in strong magneticfields (omegac<missing VAR> tau > 1), a parabolic negative magnetoresistance caused byelectron-electron interactions in the regime of k<missing VAR>B T<missing VAR> tau / hbar  1, whichis the transition from the diffusive to the ballistic regime.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 2, 'D', 1],[62.0, 2, 'D', 0],[11.0, 1, ',', 0]

Ni
###Magnetoresistance through spin polarized p-states|Nikos Papanikolaou###
(38346, 38346)
 We present a theoretical study of the ballistic magnetoresistance in Nicontacts using first-principles, atomistic electronic-structure calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magnetoresistance through spin polarized p-states|Nikos Papanikolaou###
(38368, 38368)
In particular we investigate the role of defects in the contact region in orderto explain the recently observed spectacular magnetoresistance ratio.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

InSb
###Unconventional magnetoresistance in long InSb nanowires|S. V. Zaitsev-Zotov,Yu. A. Kumzerov,Yu. A. Firsov,P. Monceau###
(38541, 38542)
Unconventional magnetoresistance in long InSb nanowires.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 5, 'nm', 1],[47.0, 1, 'mm', 1],[64.0, 300, 'K', 1],[154.0, 20, '%', 3]

InSb
###Unconventional magnetoresistance in long InSb nanowires|S. V. Zaitsev-Zotov,Yu. A. Kumzerov,Yu. A. Firsov,P. Monceau###
(38564, 38565)
 Magnetoresistance in long correlated nanowires of degenerate semiconductorInSb in asbestos matrix (wire diameter of around 5 nm, length 0.1 - 1 mm) isstudied over temperature range 2.3 - 300 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 5, 'nm', 0],[24.0, 1, 'mm', 0],[41.0, 300, 'K', 0],[131.0, 20, '%', 2]

At
###Unconventional magnetoresistance in long InSb nanowires|S. V. Zaitsev-Zotov,Yu. A. Kumzerov,Yu. A. Firsov,P. Monceau###
(38609, 38609)
 At zero magnetic field the electricconduction G<missing VAR> and the current-voltage characteristics of such wires obey thepower laws G<missing VAR>propto T<missing VAR>alpha, Ipropto Vbeta, expected forone-dimensional electron systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 5, 'nm', 1],[20.0, 1, 'mm', 1],[3.0, 300, 'K', 1],[87.0, 20, '%', 1]

I
###Unconventional magnetoresistance in long InSb nanowires|S. V. Zaitsev-Zotov,Yu. A. Kumzerov,Yu. A. Firsov,P. Monceau###
(38658, 38658)
 At zero magnetic field the electricconduction G<missing VAR> and the current-voltage characteristics of such wires obey thepower laws G<missing VAR>propto T<missing VAR>alpha, Ipropto Vbeta, expected forone-dimensional electron systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 5, 'nm', 1],[69.0, 1, 'mm', 1],[52.0, 300, 'K', 1],[38.0, 20, '%', 1]

V
###Unconventional magnetoresistance in long InSb nanowires|S. V. Zaitsev-Zotov,Yu. A. Kumzerov,Yu. A. Firsov,P. Monceau###
(38661, 38661)
 At zero magnetic field the electricconduction G<missing VAR> and the current-voltage characteristics of such wires obey thepower laws G<missing VAR>propto T<missing VAR>alpha, Ipropto Vbeta, expected forone-dimensional electron systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 5, 'nm', 1],[72.0, 1, 'mm', 1],[55.0, 300, 'K', 1],[35.0, 20, '%', 1]

H10
###Unconventional magnetoresistance in long InSb nanowires|S. V. Zaitsev-Zotov,Yu. A. Kumzerov,Yu. A. Firsov,P. Monceau###
(38714, 38715)
 The effect of magnetic field corresponds to a20% growth of the exponents alpha, beta at H10 T<missing VAR>.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 5, 'nm', 2],[125.0, 1, 'mm', 2],[108.0, 300, 'K', 2],[18.0, 20, '%', 0]

Ga
###Very large magnetoresistance in lateral ferromagnetic (Ga,Mn)As wires with nanoconstrictions|C. Ruester,T. Borzenko,C. Gould,G. Schmidt,L. W. Molenkamp,X. Liu,T. J. Wojtowicz,J. K. Furdyna,Z. G. Yu,M. E. Flatte###
(38790, 38790)
Very large magnetoresistance in lateral ferromagnetic (Ga,Mn)As wires with nanoconstrictions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 8, '%', 4]

Mn
###Very large magnetoresistance in lateral ferromagnetic (Ga,Mn)As wires with nanoconstrictions|C. Ruester,T. Borzenko,C. Gould,G. Schmidt,L. W. Molenkamp,X. Liu,T. J. Wojtowicz,J. K. Furdyna,Z. G. Yu,M. E. Flatte###
(38792, 38792)
Very large magnetoresistance in lateral ferromagnetic (Ga,Mn)As wires with nanoconstrictions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 8, '%', 4]

As
###Very large magnetoresistance in lateral ferromagnetic (Ga,Mn)As wires with nanoconstrictions|C. Ruester,T. Borzenko,C. Gould,G. Schmidt,L. W. Molenkamp,X. Liu,T. J. Wojtowicz,J. K. Furdyna,Z. G. Yu,M. E. Flatte###
(38794, 38794)
Very large magnetoresistance in lateral ferromagnetic (Ga,Mn)As wires with nanoconstrictions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 8, '%', 4]

Ga
###Very large magnetoresistance in lateral ferromagnetic (Ga,Mn)As wires with nanoconstrictions|C. Ruester,T. Borzenko,C. Gould,G. Schmidt,L. W. Molenkamp,X. Liu,T. J. Wojtowicz,J. K. Furdyna,Z. G. Yu,M. E. Flatte###
(38810, 38810)
 We have fabricated (Ga,Mn)As nanostructures in which domain walls can bepinned by sub-10 nm constrictions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 8, '%', 3]

Mn
###Very large magnetoresistance in lateral ferromagnetic (Ga,Mn)As wires with nanoconstrictions|C. Ruester,T. Borzenko,C. Gould,G. Schmidt,L. W. Molenkamp,X. Liu,T. J. Wojtowicz,J. K. Furdyna,Z. G. Yu,M. E. Flatte###
(38812, 38812)
 We have fabricated (Ga,Mn)As nanostructures in which domain walls can bepinned by sub-10 nm constrictions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 8, '%', 3]

As
###Very large magnetoresistance in lateral ferromagnetic (Ga,Mn)As wires with nanoconstrictions|C. Ruester,T. Borzenko,C. Gould,G. Schmidt,L. W. Molenkamp,X. Liu,T. J. Wojtowicz,J. K. Furdyna,Z. G. Yu,M. E. Flatte###
(38814, 38814)
 We have fabricated (Ga,Mn)As nanostructures in which domain walls can bepinned by sub-10 nm constrictions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 8, '%', 3]

In
###Very large magnetoresistance in lateral ferromagnetic (Ga,Mn)As wires with nanoconstrictions|C. Ruester,T. Borzenko,C. Gould,G. Schmidt,L. W. Molenkamp,X. Liu,T. J. Wojtowicz,J. K. Furdyna,Z. G. Yu,M. E. Flatte###
(38953, 38953)
 Insamples where, due to depletion at the constriction, a tunnel barrier isformed, we observe a magnetoresistance of up to 2000 %.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 8, '%', 1]

Pr1.85Ce0.15CuO4
###Fourfold oscillations and anomalous magnetic irreversibility of magnetoresistance in the non-metallic regime of Pr1.85Ce0.15CuO4|P. Fournier,M. -E. Gosselin,S. Savard,J. Renaud,I. Hetel,P. Richard,G. Riou###
(39041, 39047)
Fourfold oscillations and anomalous magnetic irreversibility of magnetoresistance in the non-metallic regime of Pr1.85Ce0.15CuO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.02142857142857143,0.2642857142857143,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Weak localization and antilocalization in semiconducting polymer sandwich devices|Ö. Mermer,M. Wohlgenannt,G. Veeraraghavan,T. L. Francis###
(39310, 39310)
 We have performed magnetoresistance measurements on polyfluorene sandwichdevices in weak magnetic fields as a function of applied voltage, devicetemperature (10K to 300K), film thickness and electrode materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 300, 'K', 0]

F
###Spin injection across magnetic/non-magnetic interfaces with finite magnetic layers|Alexander Khaetskii,J. Carlos Egues,Daniel Loss,Charles Gould,Georg Schmidt,Laurens W. Molenkamp###
(39526, 39526)
 We have reconsidered the problem of spin injection acrossferromagnet/non-magnetic-semiconductor (FM<missing VAR>/NM<missing VAR>S) anddilute-magnetic-semiconductor/non-magnetic-semiconductor interfaces, forstructures with textitfinite magnetic layers (FM<missing VAR> or DMS).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Spin injection across magnetic/non-magnetic interfaces with finite magnetic layers|Alexander Khaetskii,J. Carlos Egues,Daniel Loss,Charles Gould,Georg Schmidt,Laurens W. Molenkamp###
(39529, 39529)
 We have reconsidered the problem of spin injection acrossferromagnet/non-magnetic-semiconductor (FM<missing VAR>/NM<missing VAR>S) anddilute-magnetic-semiconductor/non-magnetic-semiconductor interfaces, forstructures with textitfinite magnetic layers (FM<missing VAR> or DMS).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin injection across magnetic/non-magnetic interfaces with finite magnetic layers|Alexander Khaetskii,J. Carlos Egues,Daniel Loss,Charles Gould,Georg Schmidt,Laurens W. Molenkamp###
(39531, 39531)
 We have reconsidered the problem of spin injection acrossferromagnet/non-magnetic-semiconductor (FM<missing VAR>/NM<missing VAR>S) anddilute-magnetic-semiconductor/non-magnetic-semiconductor interfaces, forstructures with textitfinite magnetic layers (FM<missing VAR> or DMS).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Spin injection across magnetic/non-magnetic interfaces with finite magnetic layers|Alexander Khaetskii,J. Carlos Egues,Daniel Loss,Charles Gould,Georg Schmidt,Laurens W. Molenkamp###
(39567, 39567)
 We have reconsidered the problem of spin injection acrossferromagnet/non-magnetic-semiconductor (FM<missing VAR>/NM<missing VAR>S) anddilute-magnetic-semiconductor/non-magnetic-semiconductor interfaces, forstructures with textitfinite magnetic layers (FM<missing VAR> or DMS).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin injection across magnetic/non-magnetic interfaces with finite magnetic layers|Alexander Khaetskii,J. Carlos Egues,Daniel Loss,Charles Gould,Georg Schmidt,Laurens W. Molenkamp###
(39574, 39574)
 We have reconsidered the problem of spin injection acrossferromagnet/non-magnetic-semiconductor (FM<missing VAR>/NM<missing VAR>S) anddilute-magnetic-semiconductor/non-magnetic-semiconductor interfaces, forstructures with textitfinite magnetic layers (FM<missing VAR> or DMS).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin injection across magnetic/non-magnetic interfaces with finite magnetic layers|Alexander Khaetskii,J. Carlos Egues,Daniel Loss,Charles Gould,Georg Schmidt,Laurens W. Molenkamp###
(39693, 39693)
 In a limitedparameter range, our formulas predict a strong d<missing VAR> dependence arising from themagnetic contacts in systems where their magnetoresistances are sizable.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CuCrZrS4
###Large negative magnetoresistance in thiospinel CuCrZrS4|Takao Furubayashi,Hiroyuki Suzuki,Nami Kobayashi,Shoichi Nagata###
(39763, 39767)
Large negative magnetoresistance in thiospinel CuCrZrS4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 100, 'K', 4],[188.0, 80, 'at', 4],[189.0, 16, 'K', 4]

CuCrZrS4
###Large negative magnetoresistance in thiospinel CuCrZrS4|Takao Furubayashi,Hiroyuki Suzuki,Nami Kobayashi,Shoichi Nagata###
(39793, 39797)
 We report on large negative magnetoresistance observed in ferromagneticthiospinel compound CuCrZrS4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 100, 'K', 3],[158.0, 80, 'at', 3],[159.0, 16, 'K', 3]

H
###Large negative magnetoresistance in thiospinel CuCrZrS4|Takao Furubayashi,Hiroyuki Suzuki,Nami Kobayashi,Shoichi Nagata###
(39922, 39922)
 Magnetoresistance ratio rho (T<missing VAR>,0)/rho(T<missing VAR>,H) is1.5 at 100 K for H90 k<missing VAR>Oe and increases divergently with decreasing temperaturereaching 80 at 16 K.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 100, 'K', 0],[33.0, 80, 'at', 0],[34.0, 16, 'K', 0]

H90
###Large negative magnetoresistance in thiospinel CuCrZrS4|Takao Furubayashi,Hiroyuki Suzuki,Nami Kobayashi,Shoichi Nagata###
(39935, 39936)
 Magnetoresistance ratio rho (T<missing VAR>,0)/rho(T<missing VAR>,H) is1.5 at 100 K for H90 k<missing VAR>Oe and increases divergently with decreasing temperaturereaching 80 at 16 K.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 100, 'K', 0],[19.0, 80, 'at', 0],[20.0, 16, 'K', 0]

La1.99Sr0.01CuO4
###Weak ferromagnetism of La_{1.99}Sr_{0.01}CuO_4 thin films: evidence for removal of corrugation in CuO_2 plane by epitaxial strain|I. Tsukada###
(40237, 40243)
Weak ferromagnetism of La1.99Sr0.01CuO4 thin films evidence for removal of corrugation in CuO2 plane by epitaxial strain.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0.0014285714285714286,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2842857142857143,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CuO2
###Weak ferromagnetism of La_{1.99}Sr_{0.01}CuO_4 thin films: evidence for removal of corrugation in CuO_2 plane by epitaxial strain|I. Tsukada###
(40261, 40263)
Weak ferromagnetism of La1.99Sr0.01CuO4 thin films evidence for removal of corrugation in CuO2 plane by epitaxial strain.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La1.99Sr0.01CuO4
###Weak ferromagnetism of La_{1.99}Sr_{0.01}CuO_4 thin films: evidence for removal of corrugation in CuO_2 plane by epitaxial strain|I. Tsukada###
(40282, 40288)
 The weak ferromagnetism of La1.99Sr0.01CuO4 epitaxial thin films isinvestigated using magnetoresistance measurement.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0.0014285714285714286,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2842857142857143,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O3
###Weak ferromagnetism of La_{1.99}Sr_{0.01}CuO_4 thin films: evidence for removal of corrugation in CuO_2 plane by epitaxial strain|I. Tsukada###
(40350, 40351)
 While a steplike negativemagnetoresistance associated with the weak ferromagnetic transition is clearlyobserved in the films grown on YAlO3(001), it is notably suppressed in thefilms grown on SrTiO3(100) and(LaAlO3)0.3(SrAl0.5Ta0.5O3)0.7(100), and almost disappears infilms grown on LaSrAlO4(001).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O3
###Weak ferromagnetism of La_{1.99}Sr_{0.01}CuO_4 thin films: evidence for removal of corrugation in CuO_2 plane by epitaxial strain|I. Tsukada###
(40378, 40379)
 While a steplike negativemagnetoresistance associated with the weak ferromagnetic transition is clearlyobserved in the films grown on YAlO3(001), it is notably suppressed in thefilms grown on SrTiO3(100) and(LaAlO3)0.3(SrAl0.5Ta0.5O3)0.7(100), and almost disappears infilms grown on LaSrAlO4(001).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(LaAlO3)0.3
###Weak ferromagnetism of La_{1.99}Sr_{0.01}CuO_4 thin films: evidence for removal of corrugation in CuO_2 plane by epitaxial strain|I. Tsukada###
(40387, 40393)
 While a steplike negativemagnetoresistance associated with the weak ferromagnetic transition is clearlyobserved in the films grown on YAlO3(001), it is notably suppressed in thefilms grown on SrTiO3(100) and(LaAlO3)0.3(SrAl0.5Ta0.5O3)0.7(100), and almost disappears infilms grown on LaSrAlO4(001).
Featurization successful!
0,0,0,0,0,0,0,0.6,0,0,0,0,0.19999999999999998,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.19999999999999998,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(SrAl0.5Ta0.5O3)0.7
###Weak ferromagnetism of La_{1.99}Sr_{0.01}CuO_4 thin films: evidence for removal of corrugation in CuO_2 plane by epitaxial strain|I. Tsukada###
(40394, 40403)
 While a steplike negativemagnetoresistance associated with the weak ferromagnetic transition is clearlyobserved in the films grown on YAlO3(001), it is notably suppressed in thefilms grown on SrTiO3(100) and(LaAlO3)0.3(SrAl0.5Ta0.5O3)0.7(100), and almost disappears infilms grown on LaSrAlO4(001).
Featurization successful!
0,0,0,0,0,0,0,0.6,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O4
###Weak ferromagnetism of La_{1.99}Sr_{0.01}CuO_4 thin films: evidence for removal of corrugation in CuO_2 plane by epitaxial strain|I. Tsukada###
(40427, 40428)
 While a steplike negativemagnetoresistance associated with the weak ferromagnetic transition is clearlyobserved in the films grown on YAlO3(001), it is notably suppressed in thefilms grown on SrTiO3(100) and(LaAlO3)0.3(SrAl0.5Ta0.5O3)0.7(100), and almost disappears infilms grown on LaSrAlO4(001).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CuO2
###Weak ferromagnetism of La_{1.99}Sr_{0.01}CuO_4 thin films: evidence for removal of corrugation in CuO_2 plane by epitaxial strain|I. Tsukada###
(40457, 40459)
 The strong suppression of the steplikemagnetoresistance provides evidence that the CuO2 planes are much lesscorrugated in thin films grown on tetragonal substrates, particularly onLaSrAlO4(001), than in bulk crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O4
###Weak ferromagnetism of La_{1.99}Sr_{0.01}CuO_4 thin films: evidence for removal of corrugation in CuO_2 plane by epitaxial strain|I. Tsukada###
(40495, 40496)
 The strong suppression of the steplikemagnetoresistance provides evidence that the CuO2 planes are much lesscorrugated in thin films grown on tetragonal substrates, particularly onLaSrAlO4(001), than in bulk crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YBCO
###Magnetoresistance of Junctions made of Underdoped YBCO Separated by a Ga-doped YBCO Barrier|L. Shkedy,G. Koren,E. Polturak###
(40531, 40534)
Magnetoresistance of Junctions made of Underdoped YBCO Separated by a Ga-doped YBCO Barrier.
Featurization terminated normally.
0,0,0,0,0.25,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###Magnetoresistance of Junctions made of Underdoped YBCO Separated by a Ga-doped YBCO Barrier|L. Shkedy,G. Koren,E. Polturak###
(40542, 40542)
Magnetoresistance of Junctions made of Underdoped YBCO Separated by a Ga-doped YBCO Barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YBCO
###Magnetoresistance of Junctions made of Underdoped YBCO Separated by a Ga-doped YBCO Barrier|L. Shkedy,G. Koren,E. Polturak###
(40546, 40549)
Magnetoresistance of Junctions made of Underdoped YBCO Separated by a Ga-doped YBCO Barrier.
Featurization terminated normally.
0,0,0,0,0.25,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(SNS)
###Magnetoresistance of Junctions made of Underdoped YBCO Separated by a Ga-doped YBCO Barrier|L. Shkedy,G. Koren,E. Polturak###
(40575, 40579)
 We report magnetoresistance measurements of ramp typesuperconductor-normal-superconductor (SNS) junctions.
Featurization successful!
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YBa2Cu3O
###Magnetoresistance of Junctions made of Underdoped YBCO Separated by a Ga-doped YBCO Barrier|L. Shkedy,G. Koren,E. Polturak###
(40595, 40600)
 The junctions consist ofunderdoped YBa2Cu3Oy<missing VAR> (YBCO) electrodes separated by a barrier ofYBa2Cu2.6Ga0.4Oy<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(YBCO)
###Magnetoresistance of Junctions made of Underdoped YBCO Separated by a Ga-doped YBCO Barrier|L. Shkedy,G. Koren,E. Polturak###
(40603, 40608)
 The junctions consist ofunderdoped YBa2Cu3Oy<missing VAR> (YBCO) electrodes separated by a barrier ofYBa2Cu2.6Ga0.4Oy<missing VAR>.
Featurization successful!
0,0,0,0,0.25,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YBa2Cu2.6Ga0.4O
###Magnetoresistance of Junctions made of Underdoped YBCO Separated by a Ga-doped YBCO Barrier|L. Shkedy,G. Koren,E. Polturak###
(40623, 40630)
 The junctions consist ofunderdoped YBa2Cu3Oy<missing VAR> (YBCO) electrodes separated by a barrier ofYBa2Cu2.6Ga0.4Oy<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.37142857142857144,0,0.05714285714285715,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YBCO/N/YBCO
###Magnetoresistance of Junctions made of Underdoped YBCO Separated by a Ga-doped YBCO Barrier|L. Shkedy,G. Koren,E. Polturak###
(40702, 40712)
 Our results indicate that inunderdoped YBCO/N/YBCO SNS structures, the proximity effect does not exhibitthe anomalously long range found in optimally doped YBCO structures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

SNS
###Magnetoresistance of Junctions made of Underdoped YBCO Separated by a Ga-doped YBCO Barrier|L. Shkedy,G. Koren,E. Polturak###
(40714, 40716)
 Our results indicate that inunderdoped YBCO/N/YBCO SNS structures, the proximity effect does not exhibitthe anomalously long range found in optimally doped YBCO structures.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YBCO
###Magnetoresistance of Junctions made of Underdoped YBCO Separated by a Ga-doped YBCO Barrier|L. Shkedy,G. Koren,E. Polturak###
(40750, 40753)
 Our results indicate that inunderdoped YBCO/N/YBCO SNS structures, the proximity effect does not exhibitthe anomalously long range found in optimally doped YBCO structures.
Featurization terminated normally.
0,0,0,0,0.25,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YBCO
###Magnetoresistance of Junctions made of Underdoped YBCO Separated by a Ga-doped YBCO Barrier|L. Shkedy,G. Koren,E. Polturak###
(40790, 40793)
 From ourdata we obtain the diffusion coefficient and relaxation time of quasiparticlesin underdoped YBCO.
Featurization terminated normally.
0,0,0,0,0.25,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.67Sr0.33MnO3/Nd0.67Sr0.33MnO3
###Giant enhancement of room temperature magnetoresistance in La_{0.67}Sr_{0.33}MnO_{3}/Nd_{0.67}Sr_{0.33}MnO_{3} multilayers|Soumik Mukhopadhyay,I. Das###
(40818, 40832)
Giant enhancement of room temperature magnetoresistance in La0.67Sr0.33MnO3/Nd0.67Sr0.33MnO3 multilayers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[148.0, 150, '%', 2],[154.0, 270, 'K', 2],[197.0, 15, '%', 2]

C
###Giant enhancement of room temperature magnetoresistance in La_{0.67}Sr_{0.33}MnO_{3}/Nd_{0.67}Sr_{0.33}MnO_{3} multilayers|Soumik Mukhopadhyay,I. Das###
(40849, 40849)
 The metal-insulator transition temperature in CMR manganites has been alteredand brought close to the room temperature by preparingLa0.67Sr0.33MnO3 (LSMO)/ Nd0.67Sr0.33MnO3 (NSM<missing VAR>O)multilayers with ultra thin individual layers of LSMO and NSM<missing VAR>O.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 150, '%', 1],[137.0, 270, 'K', 1],[180.0, 15, '%', 1]

La0.67Sr0.33MnO3
###Giant enhancement of room temperature magnetoresistance in La_{0.67}Sr_{0.33}MnO_{3}/Nd_{0.67}Sr_{0.33}MnO_{3} multilayers|Soumik Mukhopadhyay,I. Das###
(40881, 40887)
 The metal-insulator transition temperature in CMR manganites has been alteredand brought close to the room temperature by preparingLa0.67Sr0.33MnO3 (LSMO)/ Nd0.67Sr0.33MnO3 (NSM<missing VAR>O)multilayers with ultra thin individual layers of LSMO and NSM<missing VAR>O.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.066,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.134,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 150, '%', 1],[99.0, 270, 'K', 1],[142.0, 15, '%', 1]

O
###Giant enhancement of room temperature magnetoresistance in La_{0.67}Sr_{0.33}MnO_{3}/Nd_{0.67}Sr_{0.33}MnO_{3} multilayers|Soumik Mukhopadhyay,I. Das###
(40893, 40893)
 The metal-insulator transition temperature in CMR manganites has been alteredand brought close to the room temperature by preparingLa0.67Sr0.33MnO3 (LSMO)/ Nd0.67Sr0.33MnO3 (NSM<missing VAR>O)multilayers with ultra thin individual layers of LSMO and NSM<missing VAR>O.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 150, '%', 1],[93.0, 270, 'K', 1],[136.0, 15, '%', 1]

Nd0.67Sr0.33MnO3
###Giant enhancement of room temperature magnetoresistance in La_{0.67}Sr_{0.33}MnO_{3}/Nd_{0.67}Sr_{0.33}MnO_{3} multilayers|Soumik Mukhopadhyay,I. Das###
(40897, 40903)
 The metal-insulator transition temperature in CMR manganites has been alteredand brought close to the room temperature by preparingLa0.67Sr0.33MnO3 (LSMO)/ Nd0.67Sr0.33MnO3 (NSM<missing VAR>O)multilayers with ultra thin individual layers of LSMO and NSM<missing VAR>O.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.066,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.134,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 150, '%', 1],[83.0, 270, 'K', 1],[126.0, 15, '%', 1]

NS
###Giant enhancement of room temperature magnetoresistance in La_{0.67}Sr_{0.33}MnO_{3}/Nd_{0.67}Sr_{0.33}MnO_{3} multilayers|Soumik Mukhopadhyay,I. Das###
(40906, 40907)
 The metal-insulator transition temperature in CMR manganites has been alteredand brought close to the room temperature by preparingLa0.67Sr0.33MnO3 (LSMO)/ Nd0.67Sr0.33MnO3 (NSM<missing VAR>O)multilayers with ultra thin individual layers of LSMO and NSM<missing VAR>O.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 150, '%', 1],[79.0, 270, 'K', 1],[122.0, 15, '%', 1]

O
###Giant enhancement of room temperature magnetoresistance in La_{0.67}Sr_{0.33}MnO_{3}/Nd_{0.67}Sr_{0.33}MnO_{3} multilayers|Soumik Mukhopadhyay,I. Das###
(40909, 40909)
 The metal-insulator transition temperature in CMR manganites has been alteredand brought close to the room temperature by preparingLa0.67Sr0.33MnO3 (LSMO)/ Nd0.67Sr0.33MnO3 (NSM<missing VAR>O)multilayers with ultra thin individual layers of LSMO and NSM<missing VAR>O.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 150, '%', 1],[77.0, 270, 'K', 1],[120.0, 15, '%', 1]

O
###Giant enhancement of room temperature magnetoresistance in La_{0.67}Sr_{0.33}MnO_{3}/Nd_{0.67}Sr_{0.33}MnO_{3} multilayers|Soumik Mukhopadhyay,I. Das###
(40930, 40930)
 The metal-insulator transition temperature in CMR manganites has been alteredand brought close to the room temperature by preparingLa0.67Sr0.33MnO3 (LSMO)/ Nd0.67Sr0.33MnO3 (NSM<missing VAR>O)multilayers with ultra thin individual layers of LSMO and NSM<missing VAR>O.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 150, '%', 1],[56.0, 270, 'K', 1],[99.0, 15, '%', 1]

NS
###Giant enhancement of room temperature magnetoresistance in La_{0.67}Sr_{0.33}MnO_{3}/Nd_{0.67}Sr_{0.33}MnO_{3} multilayers|Soumik Mukhopadhyay,I. Das###
(40934, 40935)
 The metal-insulator transition temperature in CMR manganites has been alteredand brought close to the room temperature by preparingLa0.67Sr0.33MnO3 (LSMO)/ Nd0.67Sr0.33MnO3 (NSM<missing VAR>O)multilayers with ultra thin individual layers of LSMO and NSM<missing VAR>O.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 150, '%', 1],[51.0, 270, 'K', 1],[94.0, 15, '%', 1]

O
###Giant enhancement of room temperature magnetoresistance in La_{0.67}Sr_{0.33}MnO_{3}/Nd_{0.67}Sr_{0.33}MnO_{3} multilayers|Soumik Mukhopadhyay,I. Das###
(40937, 40937)
 The metal-insulator transition temperature in CMR manganites has been alteredand brought close to the room temperature by preparingLa0.67Sr0.33MnO3 (LSMO)/ Nd0.67Sr0.33MnO3 (NSM<missing VAR>O)multilayers with ultra thin individual layers of LSMO and NSM<missing VAR>O.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 150, '%', 1],[49.0, 270, 'K', 1],[92.0, 15, '%', 1]

O/NS
###Giant enhancement of room temperature magnetoresistance in La_{0.67}Sr_{0.33}MnO_{3}/Nd_{0.67}Sr_{0.33}MnO_{3} multilayers|Soumik Mukhopadhyay,I. Das###
(40945, 40948)
 The LSMO/NSM<missing VAR>Omultilayers with ultra thin individual layers of thickness of about 10AAexhibits 150% magnetoresistance at 270 K whereas LSMO/NSM<missing VAR>O multilayers withmoderate individual layer thickness of about 40AA each exhibits a mere 15%magnetoresistance at the same temperature.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[32.0, 150, '%', 0],[38.0, 270, 'K', 0],[81.0, 15, '%', 0]

O
###Giant enhancement of room temperature magnetoresistance in La_{0.67}Sr_{0.33}MnO_{3}/Nd_{0.67}Sr_{0.33}MnO_{3} multilayers|Soumik Mukhopadhyay,I. Das###
(40950, 40950)
 The LSMO/NSM<missing VAR>Omultilayers with ultra thin individual layers of thickness of about 10AAexhibits 150% magnetoresistance at 270 K whereas LSMO/NSM<missing VAR>O multilayers withmoderate individual layer thickness of about 40AA each exhibits a mere 15%magnetoresistance at the same temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 150, '%', 0],[36.0, 270, 'K', 0],[79.0, 15, '%', 0]

O/NS
###Giant enhancement of room temperature magnetoresistance in La_{0.67}Sr_{0.33}MnO_{3}/Nd_{0.67}Sr_{0.33}MnO_{3} multilayers|Soumik Mukhopadhyay,I. Das###
(40993, 40996)
 The LSMO/NSM<missing VAR>Omultilayers with ultra thin individual layers of thickness of about 10AAexhibits 150% magnetoresistance at 270 K whereas LSMO/NSM<missing VAR>O multilayers withmoderate individual layer thickness of about 40AA each exhibits a mere 15%magnetoresistance at the same temperature.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[13.0, 150, '%', 0],[7.0, 270, 'K', 0],[33.0, 15, '%', 0]

O
###Giant enhancement of room temperature magnetoresistance in La_{0.67}Sr_{0.33}MnO_{3}/Nd_{0.67}Sr_{0.33}MnO_{3} multilayers|Soumik Mukhopadhyay,I. Das###
(40998, 40998)
 The LSMO/NSM<missing VAR>Omultilayers with ultra thin individual layers of thickness of about 10AAexhibits 150% magnetoresistance at 270 K whereas LSMO/NSM<missing VAR>O multilayers withmoderate individual layer thickness of about 40AA each exhibits a mere 15%magnetoresistance at the same temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 150, '%', 0],[12.0, 270, 'K', 0],[31.0, 15, '%', 0]

ZnSe
###Resonant tunneling magnetoresistance in epitaxial metal-semiconductor heterostructures|J. Varalda,A. J. A. de Oliveira,D. H. Mosca,J. -M. George,M. Eddrief,M. Marangolo,V. H. Etgens###
(41143, 41144)
 We report on resonant tunneling magnetoresistance via localized statesthrough a ZnSe semiconducting barrier which can reverse the sign of theeffective spin polarization of tunneling electrons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/ZnSe/Fe
###Resonant tunneling magnetoresistance in epitaxial metal-semiconductor heterostructures|J. Varalda,A. J. A. de Oliveira,D. H. Mosca,J. -M. George,M. Eddrief,M. Marangolo,V. H. Etgens###
(41185, 41190)
 Experiments performed onFe/ZnSe/Fe planar junctions have shown that positive, negative or even itssign-reversible magnetoresistance can be obtained, depending on the biasvoltage, the energy of localized states in the ZnSe barrier and spatialsymmetry.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

ZnSe
###Resonant tunneling magnetoresistance in epitaxial metal-semiconductor heterostructures|J. Varalda,A. J. A. de Oliveira,D. H. Mosca,J. -M. George,M. Eddrief,M. Marangolo,V. H. Etgens###
(41253, 41254)
 Experiments performed onFe/ZnSe/Fe planar junctions have shown that positive, negative or even itssign-reversible magnetoresistance can be obtained, depending on the biasvoltage, the energy of localized states in the ZnSe barrier and spatialsymmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Low temperature magnetoresistance of dirty thin films and quantum wires near a parallel-field-tuned superconducting quantum phase transition|N. Shah,A. V. Lopatin,V. M. Vinokur###
(41514, 41514)
 In the quantum regime, which essentiallyshows a zero-temperature-like behavior we find a negative magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFe
###Anomalous magnetoresistance behavior of CoFe nano-oxide spin valves at low temperatures|J. Ventura,J. B. Sousa,M. A. Salgueiro da Silva,P. P. Freitas,A. Veloso###
(41607, 41608)
Anomalous magnetoresistance behavior of CoFe nano-oxide spin valves at low temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 300, 'to', 1],[82.0, 20, 'K', 1]

CoFe
###Anomalous magnetoresistance behavior of CoFe nano-oxide spin valves at low temperatures|J. Ventura,J. B. Sousa,M. A. Salgueiro da Silva,P. P. Freitas,A. Veloso###
(41635, 41636)
 We report magnetoresistance curves of CoFe nano-oxide specular spin valves ofMnIr/CoFe/nano-oxidized CoFe/CoFe/Cu/CoFe/nano-oxidized CoFe/Ta at differenttemperatures from 300 to 20 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 300, 'to', 0],[54.0, 20, 'K', 0]

MnIr/CoFe
###Anomalous magnetoresistance behavior of CoFe nano-oxide spin valves at low temperatures|J. Ventura,J. B. Sousa,M. A. Salgueiro da Silva,P. P. Freitas,A. Veloso###
(41651, 41655)
 We report magnetoresistance curves of CoFe nano-oxide specular spin valves ofMnIr/CoFe/nano-oxidized CoFe/CoFe/Cu/CoFe/nano-oxidized CoFe/Ta at differenttemperatures from 300 to 20 K.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[34.0, 300, 'to', 0],[35.0, 20, 'K', 0]

CoFe/CoFe/Cu/CoFe
###Anomalous magnetoresistance behavior of CoFe nano-oxide spin valves at low temperatures|J. Ventura,J. B. Sousa,M. A. Salgueiro da Silva,P. P. Freitas,A. Veloso###
(41661, 41670)
 We report magnetoresistance curves of CoFe nano-oxide specular spin valves ofMnIr/CoFe/nano-oxidized CoFe/CoFe/Cu/CoFe/nano-oxidized CoFe/Ta at differenttemperatures from 300 to 20 K.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[19.0, 300, 'to', 0],[20.0, 20, 'K', 0]

CoFe/Ta
###Anomalous magnetoresistance behavior of CoFe nano-oxide spin valves at low temperatures|J. Ventura,J. B. Sousa,M. A. Salgueiro da Silva,P. P. Freitas,A. Veloso###
(41676, 41679)
 We report magnetoresistance curves of CoFe nano-oxide specular spin valves ofMnIr/CoFe/nano-oxidized CoFe/CoFe/Cu/CoFe/nano-oxidized CoFe/Ta at differenttemperatures from 300 to 20 K.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[10.0, 300, 'to', 0],[11.0, 20, 'K', 0]

Si
###Low density spin-polarized transport in 2D semiconductor structures: The enigma of temperature dependent magnetoresistance of Si MOSFETs in an in-plane applied magnetic field|S. Das Sarma,E. H. Hwang###
(41882, 41882)
Low density spin-polarized transport in 2D semiconductor structures The enigma of temperature dependent magnetoresistance of Si M<missing VAR>OSFE<missing VAR>Ts in an in-plane applied magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 2, 'D', 0],[31.0, 2, 'D', 1],[139.0, 2, 'D', 2]

OSF
###Low density spin-polarized transport in 2D semiconductor structures: The enigma of temperature dependent magnetoresistance of Si MOSFETs in an in-plane applied magnetic field|S. Das Sarma,E. H. Hwang###
(41885, 41887)
Low density spin-polarized transport in 2D semiconductor structures The enigma of temperature dependent magnetoresistance of Si M<missing VAR>OSFE<missing VAR>Ts in an in-plane applied magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 2, 'D', 0],[26.0, 2, 'D', 1],[134.0, 2, 'D', 2]

Si
###Low density spin-polarized transport in 2D semiconductor structures: The enigma of temperature dependent magnetoresistance of Si MOSFETs in an in-plane applied magnetic field|S. Das Sarma,E. H. Hwang###
(41944, 41944)
 The temperature dependence of 2D magnetoresistance in an applied in-planemagnetic field is theoretically considered for electrons in Si M<missing VAR>OSFE<missing VAR>Ts withinthe screening theory for long-range charged impurity scattering limited carriertransport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 2, 'D', 1],[31.0, 2, 'D', 0],[77.0, 2, 'D', 1]

OSF
###Low density spin-polarized transport in 2D semiconductor structures: The enigma of temperature dependent magnetoresistance of Si MOSFETs in an in-plane applied magnetic field|S. Das Sarma,E. H. Hwang###
(41947, 41949)
 The temperature dependence of 2D magnetoresistance in an applied in-planemagnetic field is theoretically considered for electrons in Si M<missing VAR>OSFE<missing VAR>Ts withinthe screening theory for long-range charged impurity scattering limited carriertransport.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 2, 'D', 1],[34.0, 2, 'D', 0],[72.0, 2, 'D', 1]

In
###Low density spin-polarized transport in 2D semiconductor structures: The enigma of temperature dependent magnetoresistance of Si MOSFETs in an in-plane applied magnetic field|S. Das Sarma,E. H. Hwang###
(41982, 41982)
 In agreement with recent experimental observations we find anessentially temperature independent magnetoresistivity for carrier densitieswell into the 2D metallic regime due to the field-induced lifting of spin and,perhaps, valley degeneracies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 2, 'D', 2],[69.0, 2, 'D', 1],[39.0, 2, 'D', 0]

In
###Low density spin-polarized transport in 2D semiconductor structures: The enigma of temperature dependent magnetoresistance of Si MOSFETs in an in-plane applied magnetic field|S. Das Sarma,E. H. Hwang###
(42055, 42055)
 In particular the metallic temperature dependenceof the ballistic magnetoresistance is strongly suppressed around thezero-temperature critical magnetic field (Bs) for full spin-polarization,with the metallic temperature dependence strongest at B0, weakest around Bsim Bs<missing VAR>, and intermediate at B gg Bs<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[193.0, 2, 'D', 3],[142.0, 2, 'D', 2],[34.0, 2, 'D', 1]

B
###Low density spin-polarized transport in 2D semiconductor structures: The enigma of temperature dependent magnetoresistance of Si MOSFETs in an in-plane applied magnetic field|S. Das Sarma,E. H. Hwang###
(42098, 42098)
 In particular the metallic temperature dependenceof the ballistic magnetoresistance is strongly suppressed around thezero-temperature critical magnetic field (Bs) for full spin-polarization,with the metallic temperature dependence strongest at B0, weakest around Bsim Bs<missing VAR>, and intermediate at B gg Bs<missing VAR>.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[236.0, 2, 'D', 3],[185.0, 2, 'D', 2],[77.0, 2, 'D', 1]

B0
###Low density spin-polarized transport in 2D semiconductor structures: The enigma of temperature dependent magnetoresistance of Si MOSFETs in an in-plane applied magnetic field|S. Das Sarma,E. H. Hwang###
(42126, 42127)
 In particular the metallic temperature dependenceof the ballistic magnetoresistance is strongly suppressed around thezero-temperature critical magnetic field (Bs) for full spin-polarization,with the metallic temperature dependence strongest at B0, weakest around Bsim Bs<missing VAR>, and intermediate at B gg Bs<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[264.0, 2, 'D', 3],[213.0, 2, 'D', 2],[105.0, 2, 'D', 1]

B
###Low density spin-polarized transport in 2D semiconductor structures: The enigma of temperature dependent magnetoresistance of Si MOSFETs in an in-plane applied magnetic field|S. Das Sarma,E. H. Hwang###
(42134, 42134)
 In particular the metallic temperature dependenceof the ballistic magnetoresistance is strongly suppressed around thezero-temperature critical magnetic field (Bs) for full spin-polarization,with the metallic temperature dependence strongest at B0, weakest around Bsim Bs<missing VAR>, and intermediate at B gg Bs<missing VAR>.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[272.0, 2, 'D', 3],[221.0, 2, 'D', 2],[113.0, 2, 'D', 1]

B
###Low density spin-polarized transport in 2D semiconductor structures: The enigma of temperature dependent magnetoresistance of Si MOSFETs in an in-plane applied magnetic field|S. Das Sarma,E. H. Hwang###
(42139, 42139)
 In particular the metallic temperature dependenceof the ballistic magnetoresistance is strongly suppressed around thezero-temperature critical magnetic field (Bs) for full spin-polarization,with the metallic temperature dependence strongest at B0, weakest around Bsim Bs<missing VAR>, and intermediate at B gg Bs<missing VAR>.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[277.0, 2, 'D', 3],[226.0, 2, 'D', 2],[118.0, 2, 'D', 1]

B
###Low density spin-polarized transport in 2D semiconductor structures: The enigma of temperature dependent magnetoresistance of Si MOSFETs in an in-plane applied magnetic field|S. Das Sarma,E. H. Hwang###
(42149, 42149)
 In particular the metallic temperature dependenceof the ballistic magnetoresistance is strongly suppressed around thezero-temperature critical magnetic field (Bs) for full spin-polarization,with the metallic temperature dependence strongest at B0, weakest around Bsim Bs<missing VAR>, and intermediate at B gg Bs<missing VAR>.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[287.0, 2, 'D', 3],[236.0, 2, 'D', 2],[128.0, 2, 'D', 1]

B
###Low density spin-polarized transport in 2D semiconductor structures: The enigma of temperature dependent magnetoresistance of Si MOSFETs in an in-plane applied magnetic field|S. Das Sarma,E. H. Hwang###
(42153, 42153)
 In particular the metallic temperature dependenceof the ballistic magnetoresistance is strongly suppressed around thezero-temperature critical magnetic field (Bs) for full spin-polarization,with the metallic temperature dependence strongest at B0, weakest around Bsim Bs<missing VAR>, and intermediate at B gg Bs<missing VAR>.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[291.0, 2, 'D', 3],[240.0, 2, 'D', 2],[132.0, 2, 'D', 1]

O
###A room-temperature polymeric spin-valve|Sayani Majumdar,Himadri S. Majumdar,Reino Laiho,Ronald Osterbacka###
(42435, 42435)
 We report giant magnetoresistance up to 150 percent at low bias current andlow temperature as well as room temperature magnetoresistance in polymericspin-valves having the structure LSMO/conjugated polymer/Co.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 150, 'percent', 0]

Co
###A room-temperature polymeric spin-valve|Sayani Majumdar,Himadri S. Majumdar,Reino Laiho,Ronald Osterbacka###
(42441, 42441)
 We report giant magnetoresistance up to 150 percent at low bias current andlow temperature as well as room temperature magnetoresistance in polymericspin-valves having the structure LSMO/conjugated polymer/Co.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 150, 'percent', 0]

P3H
###A room-temperature polymeric spin-valve|Sayani Majumdar,Himadri S. Majumdar,Reino Laiho,Ronald Osterbacka###
(42458, 42460)
 The conjugatedpolymers, regiorandom and regioregular P3HT<missing VAR> were used as the spacer materials.
Featurization terminated normally.
0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 150, 'percent', 1]

GaAs/AlGaAs
###Magnetoresistance oscillations in GaAs/AlGaAs superlattices subject to in-plane magnetic fields|L. Smrčka,P. Vašek,P. Svoboda,N. A. Goncharuk,O. Pacherová,Yu. Krupko,Y. Sheikin###
(42619, 42624)
Magnetoresistance oscillations in GaAs/AlGaAs superlattices subject to in-plane magnetic fields.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[54.0, 3, 'D', 1]

GaAs/AlGaAs
###Magnetoresistance oscillations in GaAs/AlGaAs superlattices subject to in-plane magnetic fields|L. Smrčka,P. Vašek,P. Svoboda,N. A. Goncharuk,O. Pacherová,Yu. Krupko,Y. Sheikin###
(42649, 42654)
 The MBE-grown GaAs/AlGaAs superlattice with Si-doped barriers has been usedto study a 3D-2D<missing VAR> transition under the influence of the in-plane component ofapplied magnetic field.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[24.0, 3, 'D', 0]

Si
###Magnetoresistance oscillations in GaAs/AlGaAs superlattices subject to in-plane magnetic fields|L. Smrčka,P. Vašek,P. Svoboda,N. A. Goncharuk,O. Pacherová,Yu. Krupko,Y. Sheikin###
(42660, 42660)
 The MBE-grown GaAs/AlGaAs superlattice with Si-doped barriers has been usedto study a 3D-2D<missing VAR> transition under the influence of the in-plane component ofapplied magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 3, 'D', 0]

OS
###Magnetoresistance oscillations in GaAs/AlGaAs superlattices subject to in-plane magnetic fields|L. Smrčka,P. Vašek,P. Svoboda,N. A. Goncharuk,O. Pacherová,Yu. Krupko,Y. Sheikin###
(42837, 42838)
 Positions of van Hovesingularities in the D<missing VAR>OS agree excellently with magnetoresistance oscillations,confirming that the model describes adequately the magnetoresistance ofstrongly coupled semiconductor superlattices.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[159.0, 3, 'D', 3]

UPt3
###Magnetoresistance of UPt3|T. M. Lippman,J. P. Davis,H. Choi,J. Pollanen,W. P. Halperin###
(43363, 43365)
Magnetoresistance of UPt3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0
[29.0, 9, 'T', 1],[195.0, 5, 'K', 4]

UPt3
###Magnetoresistance of UPt3|T. M. Lippman,J. P. Davis,H. Choi,J. Pollanen,W. P. Halperin###
(43406, 43408)
 We have performed measurements of the temperature dependence of themagnetoresistance up to 9 T in bulk single crystals of UPt3 with the magneticfield along the b<missing VAR> axis, the easy magnetization axis.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0
[12.0, 9, 'T', 0],[152.0, 5, 'K', 3]

GaAs/AlGaAs
###Illumination-induced changes of the Fermi surface topology in three-dimensional superlattices|N. A. Goncharuk,L. Smrcka,P. Svoboda,P. Vasek,J. Kucera,Yu. Krupko,W. Wegscheider###
(43645, 43650)
 The magnetoresistance of the MBE-grown GaAs/AlGaAs superlattice with Si-dopedbarriers has been measured in tilted magnetic fields in the as-grown state, andafter brief illumination by a red-light diode at low temperature, T<missing VAR> isapproximately 0.3 K.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[70.0, 0.3, 'K', 0],[182.0, 2, 'D', 2]

Si
###Illumination-induced changes of the Fermi surface topology in three-dimensional superlattices|N. A. Goncharuk,L. Smrcka,P. Svoboda,P. Vasek,J. Kucera,Yu. Krupko,W. Wegscheider###
(43656, 43656)
 The magnetoresistance of the MBE-grown GaAs/AlGaAs superlattice with Si-dopedbarriers has been measured in tilted magnetic fields in the as-grown state, andafter brief illumination by a red-light diode at low temperature, T<missing VAR> isapproximately 0.3 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 0.3, 'K', 0],[176.0, 2, 'D', 2]

In
###Giant magnetoresistance in nanoscale ferromagnetic heterocontacts|A. N. Useinov,R. G. Deminov,L. R. Tagirov,G. Pan###
(44021, 44021)
In heterocontacts the magnetoresistance effect turned out to be not onlynegative, as usual, but can be positive as well.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HOP
###Size Effects in the Magnetoresistance of Graphite: Absence of Magnetoresistance in Micrometer size Samples|J. C. González,M. Muñoz,N. García,J. Barzola-Quiquia,D. Spoddig,K. Schindler,P. Esquinazi###
(44375, 44377)
 We present a study of the magnetoresistance of highly oriented pyrolyticgraphite (HOPG) as a function of the sample size.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La
###Nonresonant microwave absorption in epitaxial La-Sr-Mn-O films and its relation to colossal magnetoresistance|M. Golosovsky,P. Monod,P. K. Muduli,R. C. Budhani,L. Mechin,P. Perna###
(44588, 44588)
Nonresonant microwave absorption in epitaxial La-Sr-Mn-O films and its relation to colossal magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr
###Nonresonant microwave absorption in epitaxial La-Sr-Mn-O films and its relation to colossal magnetoresistance|M. Golosovsky,P. Monod,P. K. Muduli,R. C. Budhani,L. Mechin,P. Perna###
(44590, 44590)
Nonresonant microwave absorption in epitaxial La-Sr-Mn-O films and its relation to colossal magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Nonresonant microwave absorption in epitaxial La-Sr-Mn-O films and its relation to colossal magnetoresistance|M. Golosovsky,P. Monod,P. K. Muduli,R. C. Budhani,L. Mechin,P. Perna###
(44592, 44592)
Nonresonant microwave absorption in epitaxial La-Sr-Mn-O films and its relation to colossal magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Nonresonant microwave absorption in epitaxial La-Sr-Mn-O films and its relation to colossal magnetoresistance|M. Golosovsky,P. Monod,P. K. Muduli,R. C. Budhani,L. Mechin,P. Perna###
(44594, 44594)
Nonresonant microwave absorption in epitaxial La-Sr-Mn-O films and its relation to colossal magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.7Sr0.3MnO3
###Nonresonant microwave absorption in epitaxial La-Sr-Mn-O films and its relation to colossal magnetoresistance|M. Golosovsky,P. Monod,P. K. Muduli,R. C. Budhani,L. Mechin,P. Perna###
(44636, 44642)
 We study magnetic-field-dependent nonresonant microwave absorption anddispersion in thin La0.7Sr0.3MnO3 films and show that itoriginates from the colossal magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ar
###Electric Field Tuned Dimensional Crossover in Ar-Irradiated SrTiO3|J. H. Ngai,Y. Segal,F. J. Walker,S. Ismail-Beigi,K. Le Hur,C. H. Ahn###
(44816, 44816)
Electric Field Tuned Dimensional Crossover in Ar-Irradiated SrTiO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 3, 'to', 5]

SrTiO3
###Electric Field Tuned Dimensional Crossover in Ar-Irradiated SrTiO3|J. H. Ngai,Y. Segal,F. J. Walker,S. Ismail-Beigi,K. Le Hur,C. H. Ahn###
(44820, 44823)
Electric Field Tuned Dimensional Crossover in Ar-Irradiated SrTiO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 3, 'to', 5]

Ar
###Electric Field Tuned Dimensional Crossover in Ar-Irradiated SrTiO3|J. H. Ngai,Y. Segal,F. J. Walker,S. Ismail-Beigi,K. Le Hur,C. H. Ahn###
(44840, 44840)
 We present low temperature magnetoresistance measurements of Ar-irradiatedSrTiO3 under an applied electrostatic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 3, 'to', 4]

SrTiO3
###Electric Field Tuned Dimensional Crossover in Ar-Irradiated SrTiO3|J. H. Ngai,Y. Segal,F. J. Walker,S. Ismail-Beigi,K. Le Hur,C. H. Ahn###
(44845, 44848)
 We present low temperature magnetoresistance measurements of Ar-irradiatedSrTiO3 under an applied electrostatic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 3, 'to', 4]

SrTiO3
###Electric Field Tuned Dimensional Crossover in Ar-Irradiated SrTiO3|J. H. Ngai,Y. Segal,F. J. Walker,S. Ismail-Beigi,K. Le Hur,C. H. Ahn###
(45028, 45031)
 The crossover from 3 to 2-dimensional transport arises from amodulation in the carrier confinement, which is enhanced by the electric fielddependent dielectric constant of SrTiO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 3, 'to', 0]

La0.7Sr0.3MnO3
###Influence of length and measurement geometry on magnetoimpedance in La0.7Sr0.3MnO3|A. Rebello,R. Mahendiran###
(45092, 45098)
Influence of length and measurement geometry on magnetoimpedance in La0.7Sr0.3MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 47, '%', 1],[45.0, 100, 'mT', 1]

La0.7Sr0.3MnO3
###Influence of length and measurement geometry on magnetoimpedance in La0.7Sr0.3MnO3|A. Rebello,R. Mahendiran###
(45119, 45125)
 We show that ac magnetoresistance at room temperature in La0.7Sr0.3MnO3 isextremely high ( 47% in H  100 mT, f<missing VAR>  3-5 M<missing VAR>Hz), and magnetic fielddependence of reactance exhibits a double peak behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 47, '%', 0],[18.0, 100, 'mT', 0]

H
###Influence of length and measurement geometry on magnetoimpedance in La0.7Sr0.3MnO3|A. Rebello,R. Mahendiran###
(45141, 45141)
 We show that ac magnetoresistance at room temperature in La0.7Sr0.3MnO3 isextremely high ( 47% in H  100 mT, f<missing VAR>  3-5 M<missing VAR>Hz), and magnetic fielddependence of reactance exhibits a double peak behavior.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 47, '%', 0],[2.0, 100, 'mT', 0]

CoFe/NiCu/CoFe
###Exchange coupling and magnetoresistance in CoFe/NiCu/CoFe spin-valves near the Curie point of the spacer|S. Andersson,V. Korenivski###
(45337, 45344)
Exchange coupling and magnetoresistance in CoFe/NiCu/CoFe spin-valves near the Curie point of the spacer.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Ni
###Exchange coupling and magnetoresistance in CoFe/NiCu/CoFe spin-valves near the Curie point of the spacer|S. Andersson,V. Korenivski###
(45394, 45394)
 Thermal control of exchange coupling between two strongly ferromagneticlayers through a weakly ferromagnetic Ni-Cu spacer and the associatedmagnetoresistance is investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Exchange coupling and magnetoresistance in CoFe/NiCu/CoFe spin-valves near the Curie point of the spacer|S. Andersson,V. Korenivski###
(45396, 45396)
 Thermal control of exchange coupling between two strongly ferromagneticlayers through a weakly ferromagnetic Ni-Cu spacer and the associatedmagnetoresistance is investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Exchange coupling and magnetoresistance in CoFe/NiCu/CoFe spin-valves near the Curie point of the spacer|S. Andersson,V. Korenivski###
(45527, 45527)
 It is shown that the giant magnetoresistance vanishes due to a strongreduction of the mean free path in the spacer at above 30 % Ni concentration-- before the onset of ferromagnetism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Theory of acoustic-phonon assisted magnetotransport in 2D electron systems at large filling factors|O. E. Raichev###
(45755, 45756)
 The magnetoresistance is calculated for[001]-grown GaAs quantum wells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 2, 'D', 3]

MnAs
###Universal Properties of Linear Magnetoresistance in Strongly Disordered Semiconductors|H. G. Johnson,S. P. Bennett,R. Barua,L. H Lewis,D. Heiman###
(45969, 45970)
 By investigating adisordered MnAs-GaAs composite material, it is found that the magnitude of thelinear magnetoresistance (LMR) is numerically equal to the carrier mobilityover a wide range and is independent of carrier density.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Universal Properties of Linear Magnetoresistance in Strongly Disordered Semiconductors|H. G. Johnson,S. P. Bennett,R. Barua,L. H Lewis,D. Heiman###
(45972, 45973)
 By investigating adisordered MnAs-GaAs composite material, it is found that the magnitude of thelinear magnetoresistance (LMR) is numerically equal to the carrier mobilityover a wide range and is independent of carrier density.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ba1.2Rh8O16
###Dominant role of impurity scattering over crystalline anisotropy for magnetotransport properties in the quasi-1D Hollandite Ba1.2Rh8O16|Alain Pautrat,Wataru Kobayashi###
(46195, 46200)
Dominant role of impurity scattering over crystalline anisotropy for magnetotransport properties in the quasi-1D<missing VAR> Hollandite Ba1.2Rh8O16.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6349206349206349,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.31746031746031744,0,0,0,0,0,0,0,0,0,0,0.047619047619047616,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[239.0, 3, 'D', 6]

Ba1.2Rh8O16
###Dominant role of impurity scattering over crystalline anisotropy for magnetotransport properties in the quasi-1D Hollandite Ba1.2Rh8O16|Alain Pautrat,Wataru Kobayashi###
(46241, 46246)
 Angular magnetotransport measurements have been performed to tackle theorigin of the magnetoresistance in the quasi-1D<missing VAR> Hollandite Ba1.2Rh8O16.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6349206349206349,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.31746031746031744,0,0,0,0,0,0,0,0,0,0,0.047619047619047616,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[193.0, 3, 'D', 5]

Co2FeAl
###Magnetic microstructure and magnetotransport in Co2FeAl Heusler compound thin films|Mathias Weiler,Franz D. Czeschka,Inga-Mareen Imort,Günter Reiss,Andy Thomas,Georg Woltersdorf,Rudolf Gross,Sebastian T. B. Goennenwein###
(46467, 46470)
Magnetic microstructure and magnetotransport in Co2FeAl Heusler compound thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OK
###Magnetic microstructure and magnetotransport in Co2FeAl Heusler compound thin films|Mathias Weiler,Franz D. Czeschka,Inga-Mareen Imort,Günter Reiss,Andy Thomas,Georg Woltersdorf,Rudolf Gross,Sebastian T. B. Goennenwein###
(46508, 46509)
 We correlate simultaneously recorded magnetotransport and spatially resolvedmagneto optical Kerr effect (M<missing VAR>OKE) data in Co2FeAl Heusler compound thin filmsmicropatterned into Hall bars.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co2FeAl
###Magnetic microstructure and magnetotransport in Co2FeAl Heusler compound thin films|Mathias Weiler,Franz D. Czeschka,Inga-Mareen Imort,Günter Reiss,Andy Thomas,Georg Woltersdorf,Rudolf Gross,Sebastian T. B. Goennenwein###
(46517, 46520)
 We correlate simultaneously recorded magnetotransport and spatially resolvedmagneto optical Kerr effect (M<missing VAR>OKE) data in Co2FeAl Heusler compound thin filmsmicropatterned into Hall bars.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OK
###Magnetic microstructure and magnetotransport in Co2FeAl Heusler compound thin films|Mathias Weiler,Franz D. Czeschka,Inga-Mareen Imort,Günter Reiss,Andy Thomas,Georg Woltersdorf,Rudolf Gross,Sebastian T. B. Goennenwein###
(46545, 46546)
 Room temperature M<missing VAR>OKE<missing VAR> images reveal thenucleation and propagation of domains in an externally applied magnetic fieldand are used to extract a macrospin corresponding to the mean magnetizationdirection in the Hall bar.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Experimental observation of an enhanced anisotropic magnetoresistance in non-local configuration|Daniel Rüffer,Franz D. Czeschka,Rudolf Gross,Sebastian T. B. Goennenwein###
(46755, 46755)
 We compare non-local magnetoresistance measurements in multi-terminal Ninanostructures with corresponding local experiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Experimental observation of an enhanced anisotropic magnetoresistance in non-local configuration|Daniel Rüffer,Franz D. Czeschka,Rudolf Gross,Sebastian T. B. Goennenwein###
(46769, 46769)
 In both configurations,the measured voltages show the characteristic features of anisotropicmagnetoresistance (AMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.7Ca0.3MnO3
###Effect of Interface Induced Exchange Fields on Cuprate-Manganite Spin Switches|Yaohua Liu,C. Visani,N. M. Nemes,M. R. Fitzsimmons,L. Y. Zhu,J. Tornos,M. Zhernenkov,A. Hoffmann,C. Leon,J. Santamaria,S. G. E. te Velthuis###
(47043, 47049)
 We examine the anomalous inverse spin switch behavior inLa0.7Ca0.3MnO3 (LCMO)/YBa2Cu3O7-delta (YBCO)/LCMOtrilayers by combined transport studies and polarized neutron reflectometry.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Effect of Interface Induced Exchange Fields on Cuprate-Manganite Spin Switches|Yaohua Liu,C. Visani,N. M. Nemes,M. R. Fitzsimmons,L. Y. Zhu,J. Tornos,M. Zhernenkov,A. Hoffmann,C. Leon,J. Santamaria,S. G. E. te Velthuis###
(47055, 47055)
 We examine the anomalous inverse spin switch behavior inLa0.7Ca0.3MnO3 (LCMO)/YBa2Cu3O7-delta (YBCO)/LCMOtrilayers by combined transport studies and polarized neutron reflectometry.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YBa2Cu3O7
###Effect of Interface Induced Exchange Fields on Cuprate-Manganite Spin Switches|Yaohua Liu,C. Visani,N. M. Nemes,M. R. Fitzsimmons,L. Y. Zhu,J. Tornos,M. Zhernenkov,A. Hoffmann,C. Leon,J. Santamaria,S. G. E. te Velthuis###
(47058, 47064)
 We examine the anomalous inverse spin switch behavior inLa0.7Ca0.3MnO3 (LCMO)/YBa2Cu3O7-delta (YBCO)/LCMOtrilayers by combined transport studies and polarized neutron reflectometry.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5384615384615384,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23076923076923078,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15384615384615385,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(YBCO)
###Effect of Interface Induced Exchange Fields on Cuprate-Manganite Spin Switches|Yaohua Liu,C. Visani,N. M. Nemes,M. R. Fitzsimmons,L. Y. Zhu,J. Tornos,M. Zhernenkov,A. Hoffmann,C. Leon,J. Santamaria,S. G. E. te Velthuis###
(47068, 47073)
 We examine the anomalous inverse spin switch behavior inLa0.7Ca0.3MnO3 (LCMO)/YBa2Cu3O7-delta (YBCO)/LCMOtrilayers by combined transport studies and polarized neutron reflectometry.
Featurization successful!
0,0,0,0,0.25,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Effect of Interface Induced Exchange Fields on Cuprate-Manganite Spin Switches|Yaohua Liu,C. Visani,N. M. Nemes,M. R. Fitzsimmons,L. Y. Zhu,J. Tornos,M. Zhernenkov,A. Hoffmann,C. Leon,J. Santamaria,S. G. E. te Velthuis###
(47078, 47078)
 We examine the anomalous inverse spin switch behavior inLa0.7Ca0.3MnO3 (LCMO)/YBa2Cu3O7-delta (YBCO)/LCMOtrilayers by combined transport studies and polarized neutron reflectometry.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Effect of Interface Induced Exchange Fields on Cuprate-Manganite Spin Switches|Yaohua Liu,C. Visani,N. M. Nemes,M. R. Fitzsimmons,L. Y. Zhu,J. Tornos,M. Zhernenkov,A. Hoffmann,C. Leon,J. Santamaria,S. G. E. te Velthuis###
(47163, 47163)
Measuring magnetization profiles and magnetoresistance in an in-plane rotatingmagnetic field, we prove that, contrary to many accepted theoretical scenarios,the relative orientation between the two LCMOs<missing VAR> magnetizations is notsufficient to determine the magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YBCO
###Effect of Interface Induced Exchange Fields on Cuprate-Manganite Spin Switches|Yaohua Liu,C. Visani,N. M. Nemes,M. R. Fitzsimmons,L. Y. Zhu,J. Tornos,M. Zhernenkov,A. Hoffmann,C. Leon,J. Santamaria,S. G. E. te Velthuis###
(47240, 47243)
 Rather the field dependence ofmagnetoresistance is explained by the interplay between the applied magneticfield and the (exponential tail of the) induced exchange field in YBCO, thelatter originating from the electronic reconstruction at the LCMO/YBCOinterfaces.
Featurization terminated normally.
0,0,0,0,0.25,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O/YBCO
###Effect of Interface Induced Exchange Fields on Cuprate-Manganite Spin Switches|Yaohua Liu,C. Visani,N. M. Nemes,M. R. Fitzsimmons,L. Y. Zhu,J. Tornos,M. Zhernenkov,A. Hoffmann,C. Leon,J. Santamaria,S. G. E. te Velthuis###
(47268, 47273)
 Rather the field dependence ofmagnetoresistance is explained by the interplay between the applied magneticfield and the (exponential tail of the) induced exchange field in YBCO, thelatter originating from the electronic reconstruction at the LCMO/YBCOinterfaces.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

VC
###Influence of linearly polarized radiation on magnetoresistance in irradiated two-dimensional electron systems|Jesus Inarrea###
(47531, 47532)
 VC 2012 American Instituteof Physics<missing PERIOD>
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[1.0, 2012, 'American', 0]

UCoGe
###High-field moment polarization in the ferromagnetic superconductor UCoGe|W. Knafo,T. D. Matsuda,D. Aoki,F. Hardy,G. W. Scheerer,G. Ballon,M. Nardone,A. Zitouni,C. Meingast,J. Flouquet###
(47566, 47568)
High-field moment polarization in the ferromagnetic superconductor UCoGe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[46.0, 60, 'T', 1],[53.0, 1.5, 'to', 1],[54.0, 80, 'K', 1],[226.0, 12, 'T', 4]

UCoGe
###High-field moment polarization in the ferromagnetic superconductor UCoGe|W. Knafo,T. D. Matsuda,D. Aoki,F. Hardy,G. W. Scheerer,G. Ballon,M. Nardone,A. Zitouni,C. Meingast,J. Flouquet###
(47594, 47596)
 We report magnetization and magnetoresistivity measurements on theisostructural ferromagnetic superconductors UCoGe and URhGe in magnetic fieldsup to 60 T and temperatures from 1.5 to 80 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[18.0, 60, 'T', 0],[25.0, 1.5, 'to', 0],[26.0, 80, 'K', 0],[198.0, 12, 'T', 3]

URhGe
###High-field moment polarization in the ferromagnetic superconductor UCoGe|W. Knafo,T. D. Matsuda,D. Aoki,F. Hardy,G. W. Scheerer,G. Ballon,M. Nardone,A. Zitouni,C. Meingast,J. Flouquet###
(47600, 47602)
 We report magnetization and magnetoresistivity measurements on theisostructural ferromagnetic superconductors UCoGe and URhGe in magnetic fieldsup to 60 T and temperatures from 1.5 to 80 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[12.0, 60, 'T', 0],[19.0, 1.5, 'to', 0],[20.0, 80, 'K', 0],[192.0, 12, 'T', 3]

At
###High-field moment polarization in the ferromagnetic superconductor UCoGe|W. Knafo,T. D. Matsuda,D. Aoki,F. Hardy,G. W. Scheerer,G. Ballon,M. Nardone,A. Zitouni,C. Meingast,J. Flouquet###
(47625, 47625)
 At low-temperature, a momentpolarization in UCoGe in a field mu0mathbfHparallelmathbfb<missing VAR> of around50 T<missing VAR> leads to well-defined anomalies in both magnetization andmagnetoresistivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 60, 'T', 1],[4.0, 1.5, 'to', 1],[3.0, 80, 'K', 1],[169.0, 12, 'T', 2]

UCoGe
###High-field moment polarization in the ferromagnetic superconductor UCoGe|W. Knafo,T. D. Matsuda,D. Aoki,F. Hardy,G. W. Scheerer,G. Ballon,M. Nardone,A. Zitouni,C. Meingast,J. Flouquet###
(47641, 47643)
 At low-temperature, a momentpolarization in UCoGe in a field mu0mathbfHparallelmathbfb<missing VAR> of around50 T<missing VAR> leads to well-defined anomalies in both magnetization andmagnetoresistivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[27.0, 60, 'T', 1],[20.0, 1.5, 'to', 1],[19.0, 80, 'K', 1],[151.0, 12, 'T', 2]

H
###High-field moment polarization in the ferromagnetic superconductor UCoGe|W. Knafo,T. D. Matsuda,D. Aoki,F. Hardy,G. W. Scheerer,G. Ballon,M. Nardone,A. Zitouni,C. Meingast,J. Flouquet###
(47654, 47654)
 At low-temperature, a momentpolarization in UCoGe in a field mu0mathbfHparallelmathbfb<missing VAR> of around50 T<missing VAR> leads to well-defined anomalies in both magnetization andmagnetoresistivity.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 60, 'T', 1],[33.0, 1.5, 'to', 1],[32.0, 80, 'K', 1],[140.0, 12, 'T', 2]

K
###High-field moment polarization in the ferromagnetic superconductor UCoGe|W. Knafo,T. D. Matsuda,D. Aoki,F. Hardy,G. W. Scheerer,G. Ballon,M. Nardone,A. Zitouni,C. Meingast,J. Flouquet###
(47708, 47708)
 These anomalies vanish in temperatures higher than 30-40 K,where maxima in the magnetic susceptibility and the field-induced variation ofthe magnetoresistivity are found.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 60, 'T', 2],[87.0, 1.5, 'to', 2],[86.0, 80, 'K', 2],[86.0, 12, 'T', 1]

UCoGe
###High-field moment polarization in the ferromagnetic superconductor UCoGe|W. Knafo,T. D. Matsuda,D. Aoki,F. Hardy,G. W. Scheerer,G. Ballon,M. Nardone,A. Zitouni,C. Meingast,J. Flouquet###
(47756, 47758)
 A comparison is made between UCoGe and URhGe,where a moment reorientation in a magnetic fieldmu0mathbfHparallelmathbfb<missing VAR> of 12 T leads to field-induced reentrantsuperconductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[142.0, 60, 'T', 3],[135.0, 1.5, 'to', 3],[134.0, 80, 'K', 3],[36.0, 12, 'T', 0]

URhGe
###High-field moment polarization in the ferromagnetic superconductor UCoGe|W. Knafo,T. D. Matsuda,D. Aoki,F. Hardy,G. W. Scheerer,G. Ballon,M. Nardone,A. Zitouni,C. Meingast,J. Flouquet###
(47762, 47764)
 A comparison is made between UCoGe and URhGe,where a moment reorientation in a magnetic fieldmu0mathbfHparallelmathbfb<missing VAR> of 12 T leads to field-induced reentrantsuperconductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[148.0, 60, 'T', 3],[141.0, 1.5, 'to', 3],[140.0, 80, 'K', 3],[30.0, 12, 'T', 0]

H
###High-field moment polarization in the ferromagnetic superconductor UCoGe|W. Knafo,T. D. Matsuda,D. Aoki,F. Hardy,G. W. Scheerer,G. Ballon,M. Nardone,A. Zitouni,C. Meingast,J. Flouquet###
(47788, 47788)
 A comparison is made between UCoGe and URhGe,where a moment reorientation in a magnetic fieldmu0mathbfHparallelmathbfb<missing VAR> of 12 T leads to field-induced reentrantsuperconductivity.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[174.0, 60, 'T', 3],[167.0, 1.5, 'to', 3],[166.0, 80, 'K', 3],[6.0, 12, 'T', 0]

Bi2Se3
###Emerging Weak Localization Effects on Topological Insulator-Insulating Ferromagnet (Bi_2Se_3-EuS) Interface|Qi I. Yang,Merav Dolev,Li Zhang,Jinfeng Zhao,Alexander D. Fried,Elizabeth Schemm,Min Liu,Alexander Palevski,Ann F. Marshall,Subhash H. Risbud,Aharon Kapitulnik###
(47837, 47840)
Emerging Weak Localization Effects on Topological Insulator-Insulating Ferromagnet (Bi2Se3-EuS) Interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Emerging Weak Localization Effects on Topological Insulator-Insulating Ferromagnet (Bi_2Se_3-EuS) Interface|Qi I. Yang,Merav Dolev,Li Zhang,Jinfeng Zhao,Alexander D. Fried,Elizabeth Schemm,Min Liu,Alexander Palevski,Ann F. Marshall,Subhash H. Risbud,Aharon Kapitulnik###
(47843, 47843)
Emerging Weak Localization Effects on Topological Insulator-Insulating Ferromagnet (Bi2Se3-EuS) Interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Se3
###Emerging Weak Localization Effects on Topological Insulator-Insulating Ferromagnet (Bi_2Se_3-EuS) Interface|Qi I. Yang,Merav Dolev,Li Zhang,Jinfeng Zhao,Alexander D. Fried,Elizabeth Schemm,Min Liu,Alexander Palevski,Ann F. Marshall,Subhash H. Risbud,Aharon Kapitulnik###
(47859, 47862)
 Thin films of topological insulator Bi2Se3 were deposited directly oninsulating ferromagnetic EuS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuS
###Emerging Weak Localization Effects on Topological Insulator-Insulating Ferromagnet (Bi_2Se_3-EuS) Interface|Qi I. Yang,Merav Dolev,Li Zhang,Jinfeng Zhao,Alexander D. Fried,Elizabeth Schemm,Min Liu,Alexander Palevski,Ann F. Marshall,Subhash H. Risbud,Aharon Kapitulnik###
(47877, 47878)
 Thin films of topological insulator Bi2Se3 were deposited directly oninsulating ferromagnetic EuS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Emerging Weak Localization Effects on Topological Insulator-Insulating Ferromagnet (Bi_2Se_3-EuS) Interface|Qi I. Yang,Merav Dolev,Li Zhang,Jinfeng Zhao,Alexander D. Fried,Elizabeth Schemm,Min Liu,Alexander Palevski,Ann F. Marshall,Subhash H. Risbud,Aharon Kapitulnik###
(47910, 47910)
 Unusual negative magnetoresistance was observednear the zero field below the Curie temperature (T<missing VAR>C), resembling the weaklocalization effect; whereas the usual positive magnetoresistance was recoveredabove T<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Emerging Weak Localization Effects on Topological Insulator-Insulating Ferromagnet (Bi_2Se_3-EuS) Interface|Qi I. Yang,Merav Dolev,Li Zhang,Jinfeng Zhao,Alexander D. Fried,Elizabeth Schemm,Min Liu,Alexander Palevski,Ann F. Marshall,Subhash H. Risbud,Aharon Kapitulnik###
(47944, 47944)
 Unusual negative magnetoresistance was observednear the zero field below the Curie temperature (T<missing VAR>C), resembling the weaklocalization effect; whereas the usual positive magnetoresistance was recoveredabove T<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Se3
###Emerging Weak Localization Effects on Topological Insulator-Insulating Ferromagnet (Bi_2Se_3-EuS) Interface|Qi I. Yang,Merav Dolev,Li Zhang,Jinfeng Zhao,Alexander D. Fried,Elizabeth Schemm,Min Liu,Alexander Palevski,Ann F. Marshall,Subhash H. Risbud,Aharon Kapitulnik###
(47961, 47964)
 Such negative magnetoresistance was only observed for Bi2Se3layers thinner than t<missing VAR>4nm, when its top and bottom surfaces are coupled.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Interface-induced magnetism in perovskite quantum wells|Clayton A. Jackson,Susanne Stemmer###
(48126, 48129)
 We investigate the angular dependence of the magnetoresistance of thin (< 1nm), metallic SrTiO3 quantum wells epitaxially embedded in insulating,ferrimagnetic GdTiO3 and insulating, antiferromagnetic SmTiO3, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GdTiO3
###Interface-induced magnetism in perovskite quantum wells|Clayton A. Jackson,Susanne Stemmer###
(48147, 48150)
 We investigate the angular dependence of the magnetoresistance of thin (< 1nm), metallic SrTiO3 quantum wells epitaxially embedded in insulating,ferrimagnetic GdTiO3 and insulating, antiferromagnetic SmTiO3, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SmTiO3
###Interface-induced magnetism in perovskite quantum wells|Clayton A. Jackson,Susanne Stemmer###
(48159, 48162)
 We investigate the angular dependence of the magnetoresistance of thin (< 1nm), metallic SrTiO3 quantum wells epitaxially embedded in insulating,ferrimagnetic GdTiO3 and insulating, antiferromagnetic SmTiO3, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Interface-induced magnetism in perovskite quantum wells|Clayton A. Jackson,Susanne Stemmer###
(48171, 48174)
The SrTiO3 quantum wells contain a high density of mobile electrons (7x<missing VAR>1014cm-2).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GdTiO3
###Interface-induced magnetism in perovskite quantum wells|Clayton A. Jackson,Susanne Stemmer###
(48232, 48235)
 We show that the longitudinal and transverse magnetoresistance in thestructures with GdTiO3 are consistent with anisotropic magnetoresistance, andthus indicative of induced ferromagnetism in the SrTiO3, rather than anonequilibrium proximity effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Interface-induced magnetism in perovskite quantum wells|Clayton A. Jackson,Susanne Stemmer###
(48265, 48268)
 We show that the longitudinal and transverse magnetoresistance in thestructures with GdTiO3 are consistent with anisotropic magnetoresistance, andthus indicative of induced ferromagnetism in the SrTiO3, rather than anonequilibrium proximity effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SmTiO3
###Interface-induced magnetism in perovskite quantum wells|Clayton A. Jackson,Susanne Stemmer###
(48298, 48301)
 Comparison with the structures withantiferromagnetic SmTiO3 shows that the properties of thin SrTiO3 quantum wellscan be tuned to obtain magnetic states that do not exist in the bulk material.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Interface-induced magnetism in perovskite quantum wells|Clayton A. Jackson,Susanne Stemmer###
(48315, 48318)
 Comparison with the structures withantiferromagnetic SmTiO3 shows that the properties of thin SrTiO3 quantum wellscan be tuned to obtain magnetic states that do not exist in the bulk material.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Electronic structure basis for the titanic magnetoresistance in WTe$_2$|I. Pletikosić,Mazhar N. Ali,A. Fedorov,R. J. Cava,T. Valla###
(48618, 48620)
Electronic structure basis for the titanic magnetoresistance in WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Electronic structure basis for the titanic magnetoresistance in WTe$_2$|I. Pletikosić,Mazhar N. Ali,A. Fedorov,R. J. Cava,T. Valla###
(48851, 48853)
 A changein the Fermi surface with temperature was found and a high-density-of-statesband that may take over conduction at higher temperatures and cause theobserved turn-on behavior of the magnetoresistance in WTe2 was identified.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Anomalous Quantum Transport Properties in Semimetallic Black Phosphorus|Kazuto Akiba,Astushi Miyake,Yuichi Akahama,Kazuyuki Matsubayashi,Yoshiya Uwatoko,Hayato Arai,Yuki Fuseya,Masashi Tokunaga###
(49123, 49123)
 In the semiconducting states at pressuresbelow 0.71 GPa, the magnetoresistance shows periodic oscillations, which can beascribed to the magneto-phonon resonance that is characteristic of highmobility semiconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 0.71, 'GPa', 0],[72.0, 1.64, 'GPa', 1]

In
###Anomalous Quantum Transport Properties in Semimetallic Black Phosphorus|Kazuto Akiba,Astushi Miyake,Yuichi Akahama,Kazuyuki Matsubayashi,Yoshiya Uwatoko,Hayato Arai,Yuki Fuseya,Masashi Tokunaga###
(49186, 49186)
 In the metallic state above 1.64 GPa, the bothtransverse and longitudinal magnetoresistance show titanic increase withexhibiting superposed Shubnikov-de Haas oscillations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 0.71, 'GPa', 1],[9.0, 1.64, 'GPa', 0]

BiSbTeSe2
###Defect induced negative magnetoresistance and surface state immunity in topological insulator BiSbTeSe2|Karan Banerjee,Jaesung Son,Praveen Deorani,Peng Ren,Lan Wang,Hyunsoo Yang###
(49328, 49332)
Defect induced negative magnetoresistance and surface state immunity in topological insulator BiSbTeSe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BiSbTeSe2
###Defect induced negative magnetoresistance and surface state immunity in topological insulator BiSbTeSe2|Karan Banerjee,Jaesung Son,Praveen Deorani,Peng Ren,Lan Wang,Hyunsoo Yang###
(49413, 49417)
 We find that theintroduction of defects results in the appearance of a negative contribution tomagnetoresistance in the topological insulator BiSbTeSe2, at temperatures below50 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Defect induced negative magnetoresistance and surface state immunity in topological insulator BiSbTeSe2|Karan Banerjee,Jaesung Son,Praveen Deorani,Peng Ren,Lan Wang,Hyunsoo Yang###
(49429, 49429)
 We find that theintroduction of defects results in the appearance of a negative contribution tomagnetoresistance in the topological insulator BiSbTeSe2, at temperatures below50 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin Hall Magnetoresistance in a Canted Ferrimagnet|Kathrin Ganzhorn,Joseph Barker,Richard Schlitz,Matthias Althammer,Stephan Geprägs,Hans Huebl,Benjamin A. Piot,Rudolf Gross,Gerrit E. W. Bauer,Sebastian T. B. Goennenwein###
(49615, 49615)
 Inthe collinear magnetic phase, in which the sublattice magnetic moments are allaligned along the same axis, we observe the conventional spin Hallmagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin Hall Magnetoresistance in a Canted Ferrimagnet|Kathrin Ganzhorn,Joseph Barker,Richard Schlitz,Matthias Althammer,Stephan Geprägs,Hans Huebl,Benjamin A. Piot,Rudolf Gross,Gerrit E. W. Bauer,Sebastian T. B. Goennenwein###
(49671, 49671)
 In contrast, in the canted phase, the magnetoresistancechanges sign.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Magnetoresistance in organic semiconductors: including pair correlations in the kinetic equations for hopping transport|A. V. Shumilin,V. V. Kabanov,V. I. Dediu###
(50410, 50410)
 At low applied voltagesthe equations can be reduced to effective resistor network that generalizes theMiller-Abrahams network and includes the effect of spin relaxation on thesystem resistivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B0
###High magnetoresistance at room temperature in p-i-n graphene nanoribbons due to band-to-band tunneling effects|Gengchiau Liang,S. Bala kumar,M. B. A. Jalil,S. G. Tan###
(50682, 50683)
 The current at B0T<missing VAR> is greatly decreased while the current atB>0T<missing VAR> is relatively large due to the band-to-band tunneling effects, resultingin a high magnetoresistance ratio, even at room-temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###High magnetoresistance at room temperature in p-i-n graphene nanoribbons due to band-to-band tunneling effects|Gengchiau Liang,S. Bala kumar,M. B. A. Jalil,S. G. Tan###
(50701, 50701)
 The current at B0T<missing VAR> is greatly decreased while the current atB>0T<missing VAR> is relatively large due to the band-to-band tunneling effects, resultingin a high magnetoresistance ratio, even at room-temperature.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Spin Hall Magnetoimpedance|Johannes Lotze,Hans Huebl,Rudolf Gross,Sebastian T. B. Goennenwein###
(50906, 50906)
 While usually the D<missing VAR>C electrical resistance of the bilayer ismeasured as a function of the magnetization orientation in the magneticinsulator, we here present magnetoimpedance measurements using bias currentswith frequencies up to several G<missing VAR>Hz.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 4, 'GHz', 1],[174.0, 40, 'ps', 2]

B
###Effect of Interlayer Spin-Flip Tunneling for Interlayer Magnetoresistance in Multilayer Massless Dirac Fermion Systems|Kenji Kubo,Takao Morinari###
(51162, 51162)
 We investigate the effect of the interlayer spin-flip tunneling for theinterlayer magnetoresistance under magnetic fields in alpha-(BEDT-TTF)2I3,which is a multilayer massless Dirac fermion system under pressure.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Effect of Interlayer Spin-Flip Tunneling for Interlayer Magnetoresistance in Multilayer Massless Dirac Fermion Systems|Kenji Kubo,Takao Morinari###
(51169, 51169)
 We investigate the effect of the interlayer spin-flip tunneling for theinterlayer magnetoresistance under magnetic fields in alpha-(BEDT-TTF)2I3,which is a multilayer massless Dirac fermion system under pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I3
###Effect of Interlayer Spin-Flip Tunneling for Interlayer Magnetoresistance in Multilayer Massless Dirac Fermion Systems|Kenji Kubo,Takao Morinari###
(51172, 51173)
 We investigate the effect of the interlayer spin-flip tunneling for theinterlayer magnetoresistance under magnetic fields in alpha-(BEDT-TTF)2I3,which is a multilayer massless Dirac fermion system under pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaBi
###Observation of pseudo two dimensional electron transport in the rock salt type topological semimetal LaBi|Nitesh Kumar,Chandra Shekhar,Shu-Chun Wu,Inge Leermakers,Olga Young,Uli Zeitler,Binghai Yan,Claudia Felser###
(51373, 51374)
Observation of pseudo two dimensional electron transport in the rock salt type topological semimetal LaBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Observation of pseudo two dimensional electron transport in the rock salt type topological semimetal LaBi|Nitesh Kumar,Chandra Shekhar,Shu-Chun Wu,Inge Leermakers,Olga Young,Uli Zeitler,Binghai Yan,Claudia Felser###
(51417, 51417)
 In LaBi, a semimetal with aband inversion equivalent to a topological insulator, we observe surface statelike behavior in the magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaBi
###Observation of pseudo two dimensional electron transport in the rock salt type topological semimetal LaBi|Nitesh Kumar,Chandra Shekhar,Shu-Chun Wu,Inge Leermakers,Olga Young,Uli Zeitler,Binghai Yan,Claudia Felser###
(51419, 51420)
 In LaBi, a semimetal with aband inversion equivalent to a topological insulator, we observe surface statelike behavior in the magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Observation of pseudo two dimensional electron transport in the rock salt type topological semimetal LaBi|Nitesh Kumar,Chandra Shekhar,Shu-Chun Wu,Inge Leermakers,Olga Young,Uli Zeitler,Binghai Yan,Claudia Felser###
(51544, 51544)
 As aconsequence, the magnetoresistance exhibits strong anisotropy with largeamplitude ( 105 %).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbSrTiO3
###Colossal Magnetoresistance Manganites and Related Prototype Devices|Yukuai Liu,Yuewei Yin,Xiaoguang Li###
(51664, 51668)
 We review colossal magnetoresistance in single phase manganites, as relatedto the field sensitive spin charge interactions and phase separation; therectifying property and negative/positive magnetoresistance inmanganite/NbSrTiO3 pn junctions in relation to the special interfaceelectronic structure; magnetoelectric coupling in manganite/ferroelectricstructures that takes advantage of strain, carrier density, and magnetic fieldsensitivity; tunneling magnetoresistance in tunnel junctions with dielectric,ferroelectric, and organic semiconductor spacers using the fully spin polarizednature of manganites; and the effect of particle size on magnetic properties inmanganite nanoparticles<missing PERIOD>
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La1-x
###Polaronic correlations and phonon renormalization in La1-xSrxMnO3 (x = 0.2, 0.3)|M. Maschek,J. -P. Castellan,D. Lamago,D. Reznik,F. Weber###
(52082, 52085)
Polaronic correlations and phonon renormalization in La1-xSrxMnO3 (x<missing VAR>  0.2, 0.3).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[10.0, 0.2, ',', 0]

MnO3
###Polaronic correlations and phonon renormalization in La1-xSrxMnO3 (x = 0.2, 0.3)|M. Maschek,J. -P. Castellan,D. Lamago,D. Reznik,F. Weber###
(52087, 52089)
Polaronic correlations and phonon renormalization in La1-xSrxMnO3 (x<missing VAR>  0.2, 0.3).
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 0.2, ',', 0]

La0.7Sr0.3MnO3
###Polaronic correlations and phonon renormalization in La1-xSrxMnO3 (x = 0.2, 0.3)|M. Maschek,J. -P. Castellan,D. Lamago,D. Reznik,F. Weber###
(52149, 52155)
 Weshowed that in La0.7Sr0.3MnO3 the phonon renormalization is strong, despite itsrelatively small magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 0.2, ',', 2]

La0.8Sr0.2MnO3
###Polaronic correlations and phonon renormalization in La1-xSrxMnO3 (x = 0.2, 0.3)|M. Maschek,J. -P. Castellan,D. Lamago,D. Reznik,F. Weber###
(52216, 52222)
 Here, we report results of a similarinelastic neutron scattering investigation of a closely related compound,La0.8Sr0.2MnO3, where the magnetoresistance is enhanced.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.04,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 0.2, ',', 3]

C
###Polaronic correlations and phonon renormalization in La1-xSrxMnO3 (x = 0.2, 0.3)|M. Maschek,J. -P. Castellan,D. Lamago,D. Reznik,F. Weber###
(52251, 52251)
 We find similar phononrenormalization and dynamic CE<missing VAR>-type polaron correlations as in La0.7Sr0.3MnO3.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 0.2, ',', 4]

La0.7Sr0.3MnO3
###Polaronic correlations and phonon renormalization in La1-xSrxMnO3 (x = 0.2, 0.3)|M. Maschek,J. -P. Castellan,D. Lamago,D. Reznik,F. Weber###
(52264, 52270)
 We find similar phononrenormalization and dynamic CE<missing VAR>-type polaron correlations as in La0.7Sr0.3MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 0.2, ',', 4]

C
###Polaronic correlations and phonon renormalization in La1-xSrxMnO3 (x = 0.2, 0.3)|M. Maschek,J. -P. Castellan,D. Lamago,D. Reznik,F. Weber###
(52322, 52322)
However, quantitative comparison of the results for the two samples shows thatonly polaron lifetime is well correlated with the strength of the CMR.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[227.0, 0.2, ',', 5]

Nb
###Evolution of the magnetoresistance lineshape with temperature and electric field across Nb-doped SrTiO$_3$ interface|A. Das,S. T. Jousma,A. Majumdar,T. Banerjee###
(52357, 52357)
Evolution of the magnetoresistance lineshape with temperature and electric field across Nb-doped SrTiO3 interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Evolution of the magnetoresistance lineshape with temperature and electric field across Nb-doped SrTiO$_3$ interface|A. Das,S. T. Jousma,A. Majumdar,T. Banerjee###
(52361, 52364)
Evolution of the magnetoresistance lineshape with temperature and electric field across Nb-doped SrTiO3 interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni/AlO
###Evolution of the magnetoresistance lineshape with temperature and electric field across Nb-doped SrTiO$_3$ interface|A. Das,S. T. Jousma,A. Majumdar,T. Banerjee###
(52406, 52409)
 We report on the temperature and electric field driven evolution of themagnetoresistance lineshape at an interface between Ni/AlOx<missing VAR> and Nb-dopedSrTiO3.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Nb
###Evolution of the magnetoresistance lineshape with temperature and electric field across Nb-doped SrTiO$_3$ interface|A. Das,S. T. Jousma,A. Majumdar,T. Banerjee###
(52414, 52414)
 We report on the temperature and electric field driven evolution of themagnetoresistance lineshape at an interface between Ni/AlOx<missing VAR> and Nb-dopedSrTiO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Evolution of the magnetoresistance lineshape with temperature and electric field across Nb-doped SrTiO$_3$ interface|A. Das,S. T. Jousma,A. Majumdar,T. Banerjee###
(52419, 52422)
 We report on the temperature and electric field driven evolution of themagnetoresistance lineshape at an interface between Ni/AlOx<missing VAR> and Nb-dopedSrTiO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

VCF
###Voltage induced control and magnetoresistance of noncollinear frustrated magnets|A. Kalitsov,M. Chshiev,B. Canals,C. Lacroix###
(52748, 52750)
 Thevoltage induced control of noncollinear frustrated materials (VCFM) can be seenas a way to intrinsic control of colossal magnetoresistance (CMR) and is thebulk material counterpart of spin transfer torque concept used to control giantmagnetoresistance in layered spin-valve structures.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Voltage induced control and magnetoresistance of noncollinear frustrated magnets|A. Kalitsov,M. Chshiev,B. Canals,C. Lacroix###
(52780, 52780)
 Thevoltage induced control of noncollinear frustrated materials (VCFM) can be seenas a way to intrinsic control of colossal magnetoresistance (CMR) and is thebulk material counterpart of spin transfer torque concept used to control giantmagnetoresistance in layered spin-valve structures.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YPtBi
###Superconductivity in the topological semimetal YPtBi|Nicholas P. Butch,P. Syers,Kevin Kirshenbaum,Andrew P. Hope,Johnpierre Paglione###
(52848, 52850)
Superconductivity in the topological semimetal YPtBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 0.77, 'K', 1],[57.0, 1.5, 'T', 1],[109.0, 2, 'x', 2]

YPtBi
###Superconductivity in the topological semimetal YPtBi|Nicholas P. Butch,P. Syers,Kevin Kirshenbaum,Andrew P. Hope,Johnpierre Paglione###
(52863, 52865)
 The noncentrosymmetric Half Heusler compound YPtBi exhibits superconductivitybelow a critical temperature Tc  0.77 K with a zero-temperature uppercritical field Hc<missing VAR>2(0)  1.5 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 0.77, 'K', 0],[42.0, 1.5, 'T', 0],[94.0, 2, 'x', 1]

H
###Superconductivity in the topological semimetal YPtBi|Nicholas P. Butch,P. Syers,Kevin Kirshenbaum,Andrew P. Hope,Johnpierre Paglione###
(52900, 52900)
 The noncentrosymmetric Half Heusler compound YPtBi exhibits superconductivitybelow a critical temperature Tc  0.77 K with a zero-temperature uppercritical field Hc<missing VAR>2(0)  1.5 T.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 0.77, 'K', 0],[7.0, 1.5, 'T', 0],[59.0, 2, 'x', 1]

YPtBi
###Superconductivity in the topological semimetal YPtBi|Nicholas P. Butch,P. Syers,Kevin Kirshenbaum,Andrew P. Hope,Johnpierre Paglione###
(53058, 53060)
 The combination of noncentrosymmetry andstrong spin-orbit coupling in YPtBi presents a promising platform for theinvestigation of topological superconductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 0.77, 'K', 4],[151.0, 1.5, 'T', 4],[99.0, 2, 'x', 3]

Bi2Se3
###Weak Localization Effects as Evidence for Bulk Quantization in Thin Films Bi2Se3|Li Zhang,Merav Dolev,Qi I. Yang,Robert H. Hammond,Bo Zhou,Alexander Palevski,Yulin Chen,Aharon Kapitulnik###
(53114, 53117)
Weak Localization Effects as Evidence for Bulk Quantization in Thin Films Bi2Se3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 2, 'D', 2]

Bi2Se3
###Weak Localization Effects as Evidence for Bulk Quantization in Thin Films Bi2Se3|Li Zhang,Merav Dolev,Qi I. Yang,Robert H. Hammond,Bo Zhou,Alexander Palevski,Yulin Chen,Aharon Kapitulnik###
(53186, 53189)
Here we present magnetoresistance measurements in ultra thin films of thetopological insulator Bi2Se3, and show that in the 2D quantum limit, in whichthe topological insulator bulk becomes quantized, an additional negativemagnetoresistance feature appears.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 2, 'D', 0]

PrMnAsO0.95F0.05
###Absence of Colossal Magnetoresistance in the Oxypnictide PrMnAsO0.95F0.05|Eve. J. Wildman,Falak Sher,Abbie. C. Mclaughlin###
(53345, 53351)
Absence of Colossal Magnetoresistance in the Oxypnictide PrMnAsO0.95F0.05.
Featurization terminated normally.
0,0,0,0,0,0,0,0.2375,0.0125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 3, 'K', 2],[131.0, 35, 'K', 4],[219.0, 35, 'K', 5],[255.0, 4, 'f', 6]

Mn
###Absence of Colossal Magnetoresistance in the Oxypnictide PrMnAsO0.95F0.05|Eve. J. Wildman,Falak Sher,Abbie. C. Mclaughlin###
(53381, 53381)
 We have recently reported a new mechanism of colossal magnetoresistance inelectron doped Mn oxypnictides NdMnAsO1-xFx.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 3, 'K', 1],[101.0, 35, 'K', 3],[189.0, 35, 'K', 4],[225.0, 4, 'f', 5]

NdMnAsO1-x
###Absence of Colossal Magnetoresistance in the Oxypnictide PrMnAsO0.95F0.05|Eve. J. Wildman,Falak Sher,Abbie. C. Mclaughlin###
(53385, 53391)
 We have recently reported a new mechanism of colossal magnetoresistance inelectron doped Mn oxypnictides NdMnAsO1-xFx.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[19.0, 3, 'K', 1],[91.0, 35, 'K', 3],[179.0, 35, 'K', 4],[215.0, 4, 'f', 5]

Nd
###Absence of Colossal Magnetoresistance in the Oxypnictide PrMnAsO0.95F0.05|Eve. J. Wildman,Falak Sher,Abbie. C. Mclaughlin###
(53431, 53431)
 Here we show that upon replacing Nd for Pr,the CMR is surprisingly no longer present.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 3, 'K', 1],[51.0, 35, 'K', 1],[139.0, 35, 'K', 2],[175.0, 4, 'f', 3]

Pr
###Absence of Colossal Magnetoresistance in the Oxypnictide PrMnAsO0.95F0.05|Eve. J. Wildman,Falak Sher,Abbie. C. Mclaughlin###
(53435, 53435)
 Here we show that upon replacing Nd for Pr,the CMR is surprisingly no longer present.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 3, 'K', 1],[47.0, 35, 'K', 1],[135.0, 35, 'K', 2],[171.0, 4, 'f', 3]

C
###Absence of Colossal Magnetoresistance in the Oxypnictide PrMnAsO0.95F0.05|Eve. J. Wildman,Falak Sher,Abbie. C. Mclaughlin###
(53441, 53441)
 Here we show that upon replacing Nd for Pr,the CMR is surprisingly no longer present.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 3, 'K', 1],[41.0, 35, 'K', 1],[129.0, 35, 'K', 2],[165.0, 4, 'f', 3]

PrMnAsO0.95F0.05
###Absence of Colossal Magnetoresistance in the Oxypnictide PrMnAsO0.95F0.05|Eve. J. Wildman,Falak Sher,Abbie. C. Mclaughlin###
(53473, 53479)
 Instead a sizeable negativemagnetoresistance is observed for PrMnAsO0.95F0.05 below 35 K (MR7T<missing VAR> (12 K) -13.4 percent for PrMnAsO0.9F0.05.
Featurization terminated normally.
0,0,0,0,0,0,0,0.2375,0.0125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 3, 'K', 2],[3.0, 35, 'K', 0],[91.0, 35, 'K', 1],[127.0, 4, 'f', 2]

K
###Absence of Colossal Magnetoresistance in the Oxypnictide PrMnAsO0.95F0.05|Eve. J. Wildman,Falak Sher,Abbie. C. Mclaughlin###
(53493, 53493)
 Instead a sizeable negativemagnetoresistance is observed for PrMnAsO0.95F0.05 below 35 K (MR7T<missing VAR> (12 K) -13.4 percent for PrMnAsO0.9F0.05.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 3, 'K', 2],[11.0, 35, 'K', 0],[77.0, 35, 'K', 1],[113.0, 4, 'f', 2]

PrMnAsO0.9F0.05
###Absence of Colossal Magnetoresistance in the Oxypnictide PrMnAsO0.95F0.05|Eve. J. Wildman,Falak Sher,Abbie. C. Mclaughlin###
(53505, 53511)
 Instead a sizeable negativemagnetoresistance is observed for PrMnAsO0.95F0.05 below 35 K (MR7T<missing VAR> (12 K) -13.4 percent for PrMnAsO0.9F0.05.
Featurization terminated normally.
0,0,0,0,0,0,0,0.2278481012658228,0.012658227848101267,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25316455696202533,0,0,0,0,0,0,0,0.25316455696202533,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25316455696202533,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 3, 'K', 2],[23.0, 35, 'K', 0],[59.0, 35, 'K', 1],[95.0, 4, 'f', 2]

PrMnAsO0.95F0.05
###Absence of Colossal Magnetoresistance in the Oxypnictide PrMnAsO0.95F0.05|Eve. J. Wildman,Falak Sher,Abbie. C. Mclaughlin###
(53535, 53541)
 A detailed neutron and synchrotron X<missing VAR>-raydiffraction study of PrMnAsO0.95F0.05 has been performed, which shows that astructural transition, Ts, occurs at 35 K from tetragonal P4/nmm toorthorhombic Pmmn symmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0.2375,0.0125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 3, 'K', 3],[53.0, 35, 'K', 1],[29.0, 35, 'K', 0],[65.0, 4, 'f', 1]

P4
###Absence of Colossal Magnetoresistance in the Oxypnictide PrMnAsO0.95F0.05|Eve. J. Wildman,Falak Sher,Abbie. C. Mclaughlin###
(53576, 53577)
 A detailed neutron and synchrotron X<missing VAR>-raydiffraction study of PrMnAsO0.95F0.05 has been performed, which shows that astructural transition, Ts, occurs at 35 K from tetragonal P4/nmm toorthorhombic Pmmn symmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 3, 'K', 3],[94.0, 35, 'K', 1],[6.0, 35, 'K', 0],[29.0, 4, 'f', 1]

Pr
###Absence of Colossal Magnetoresistance in the Oxypnictide PrMnAsO0.95F0.05|Eve. J. Wildman,Falak Sher,Abbie. C. Mclaughlin###
(53605, 53605)
 The structural transition is driven by the Pr 4felectrons degrees of freedom.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[195.0, 3, 'K', 4],[123.0, 35, 'K', 2],[35.0, 35, 'K', 1],[1.0, 4, 'f', 0]

Fe
###Large Magnetoresistance at Room Temperature in Ferromagnet/Topological Insulator Contacts|Sarmita Majumder,Samaresh Guchhait,Rik Dey,Leonard Franklin Register,Sanjay K. Banerjee###
(53669, 53669)
 We report magnetoresistance for current flow through iron/topologicalinsulator (Fe/T<missing VAR>I) and Fe/evaporated-oxide/T<missing VAR>I contacts when a magnetic field isused to initially orient the magnetic alignment of the incorporatedferromagnetic Fe bar, at temperatures ranging from 100 K to room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 100, 'K', 0]

I
###Large Magnetoresistance at Room Temperature in Ferromagnet/Topological Insulator Contacts|Sarmita Majumder,Samaresh Guchhait,Rik Dey,Leonard Franklin Register,Sanjay K. Banerjee###
(53672, 53672)
 We report magnetoresistance for current flow through iron/topologicalinsulator (Fe/T<missing VAR>I) and Fe/evaporated-oxide/T<missing VAR>I contacts when a magnetic field isused to initially orient the magnetic alignment of the incorporatedferromagnetic Fe bar, at temperatures ranging from 100 K to room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 100, 'K', 0]

Fe
###Large Magnetoresistance at Room Temperature in Ferromagnet/Topological Insulator Contacts|Sarmita Majumder,Samaresh Guchhait,Rik Dey,Leonard Franklin Register,Sanjay K. Banerjee###
(53677, 53677)
 We report magnetoresistance for current flow through iron/topologicalinsulator (Fe/T<missing VAR>I) and Fe/evaporated-oxide/T<missing VAR>I contacts when a magnetic field isused to initially orient the magnetic alignment of the incorporatedferromagnetic Fe bar, at temperatures ranging from 100 K to room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 100, 'K', 0]

I
###Large Magnetoresistance at Room Temperature in Ferromagnet/Topological Insulator Contacts|Sarmita Majumder,Samaresh Guchhait,Rik Dey,Leonard Franklin Register,Sanjay K. Banerjee###
(53684, 53684)
 We report magnetoresistance for current flow through iron/topologicalinsulator (Fe/T<missing VAR>I) and Fe/evaporated-oxide/T<missing VAR>I contacts when a magnetic field isused to initially orient the magnetic alignment of the incorporatedferromagnetic Fe bar, at temperatures ranging from 100 K to room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 100, 'K', 0]

Fe
###Large Magnetoresistance at Room Temperature in Ferromagnet/Topological Insulator Contacts|Sarmita Majumder,Samaresh Guchhait,Rik Dey,Leonard Franklin Register,Sanjay K. Banerjee###
(53722, 53722)
 We report magnetoresistance for current flow through iron/topologicalinsulator (Fe/T<missing VAR>I) and Fe/evaporated-oxide/T<missing VAR>I contacts when a magnetic field isused to initially orient the magnetic alignment of the incorporatedferromagnetic Fe bar, at temperatures ranging from 100 K to room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 100, 'K', 0]

Fe
###Large Magnetoresistance at Room Temperature in Ferromagnet/Topological Insulator Contacts|Sarmita Majumder,Samaresh Guchhait,Rik Dey,Leonard Franklin Register,Sanjay K. Banerjee###
(53764, 53764)
This magnetoresistance is associated with the relative orientation of the Febar magnetization and spin-polarization of electrons moving on the surface ofthe T<missing VAR>I with helical spin-momentum locking.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 100, 'K', 1]

I
###Large Magnetoresistance at Room Temperature in Ferromagnet/Topological Insulator Contacts|Sarmita Majumder,Samaresh Guchhait,Rik Dey,Leonard Franklin Register,Sanjay K. Banerjee###
(53795, 53795)
This magnetoresistance is associated with the relative orientation of the Febar magnetization and spin-polarization of electrons moving on the surface ofthe T<missing VAR>I with helical spin-momentum locking.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 100, 'K', 1]

C
###Linear magnetoresistance in the charge density wave state of quasi-two-dimensional rare-earth tritellurides|Alexander A. Sinchenko,Pavel D. Grigoriev,Pascal Lejay,Pierre Monceau###
(53905, 53905)
 We report measurements of the magnetoresistance in the charge density wave(CD<missing VAR>W) state of rare-earth tritellurides, namely TbTe3 and HoTe3.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Linear magnetoresistance in the charge density wave state of quasi-two-dimensional rare-earth tritellurides|Alexander A. Sinchenko,Pavel D. Grigoriev,Pascal Lejay,Pierre Monceau###
(53907, 53907)
 We report measurements of the magnetoresistance in the charge density wave(CD<missing VAR>W) state of rare-earth tritellurides, namely TbTe3 and HoTe3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TbTe3
###Linear magnetoresistance in the charge density wave state of quasi-two-dimensional rare-earth tritellurides|Alexander A. Sinchenko,Pavel D. Grigoriev,Pascal Lejay,Pierre Monceau###
(53923, 53925)
 We report measurements of the magnetoresistance in the charge density wave(CD<missing VAR>W) state of rare-earth tritellurides, namely TbTe3 and HoTe3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HoTe3
###Linear magnetoresistance in the charge density wave state of quasi-two-dimensional rare-earth tritellurides|Alexander A. Sinchenko,Pavel D. Grigoriev,Pascal Lejay,Pierre Monceau###
(53929, 53931)
 We report measurements of the magnetoresistance in the charge density wave(CD<missing VAR>W) state of rare-earth tritellurides, namely TbTe3 and HoTe3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Linear magnetoresistance in the charge density wave state of quasi-two-dimensional rare-earth tritellurides|Alexander A. Sinchenko,Pavel D. Grigoriev,Pascal Lejay,Pierre Monceau###
(53978, 53978)
 Themagnetic field dependence of magnetoresistance exhibits a temperature dependentcrossover between a conventional quadratic law at high T<missing VAR> and low B and anunusual linear dependence at low T<missing VAR> and high B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Linear magnetoresistance in the charge density wave state of quasi-two-dimensional rare-earth tritellurides|Alexander A. Sinchenko,Pavel D. Grigoriev,Pascal Lejay,Pierre Monceau###
(54001, 54001)
 Themagnetic field dependence of magnetoresistance exhibits a temperature dependentcrossover between a conventional quadratic law at high T<missing VAR> and low B and anunusual linear dependence at low T<missing VAR> and high B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Linear magnetoresistance in the charge density wave state of quasi-two-dimensional rare-earth tritellurides|Alexander A. Sinchenko,Pavel D. Grigoriev,Pascal Lejay,Pierre Monceau###
(54046, 54046)
 We present a quite generalmodel to explain the linear magnetoresistance taking into account the strongscattering of quasiparticles on CD<missing VAR>W fluctuations in the vicinity of hot spotsof the Fermi surface (FS) where the FS reconstruction is the strongest.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Linear magnetoresistance in the charge density wave state of quasi-two-dimensional rare-earth tritellurides|Alexander A. Sinchenko,Pavel D. Grigoriev,Pascal Lejay,Pierre Monceau###
(54048, 54048)
 We present a quite generalmodel to explain the linear magnetoresistance taking into account the strongscattering of quasiparticles on CD<missing VAR>W fluctuations in the vicinity of hot spotsof the Fermi surface (FS) where the FS reconstruction is the strongest.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(FS)
###Linear magnetoresistance in the charge density wave state of quasi-two-dimensional rare-earth tritellurides|Alexander A. Sinchenko,Pavel D. Grigoriev,Pascal Lejay,Pierre Monceau###
(54073, 54076)
 We present a quite generalmodel to explain the linear magnetoresistance taking into account the strongscattering of quasiparticles on CD<missing VAR>W fluctuations in the vicinity of hot spotsof the Fermi surface (FS) where the FS reconstruction is the strongest.
Featurization successful!
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FS
###Linear magnetoresistance in the charge density wave state of quasi-two-dimensional rare-earth tritellurides|Alexander A. Sinchenko,Pavel D. Grigoriev,Pascal Lejay,Pierre Monceau###
(54082, 54083)
 We present a quite generalmodel to explain the linear magnetoresistance taking into account the strongscattering of quasiparticles on CD<missing VAR>W fluctuations in the vicinity of hot spotsof the Fermi surface (FS) where the FS reconstruction is the strongest.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###Metal-insulator transition and giant anisotropic magnetoresistance in ultra thin (Ga,Mn)As|R. R. Gareev,A. Petukhov,M. Schlapps,M. Doeppe,J. Sadowski,M. Sperl,W. Wegscheider###
(54123, 54123)
Metal-insulator transition and giant anisotropic magnetoresistance in ultra thin (Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 5, 'nm', 1],[151.0, 50, '%', 2]

Mn
###Metal-insulator transition and giant anisotropic magnetoresistance in ultra thin (Ga,Mn)As|R. R. Gareev,A. Petukhov,M. Schlapps,M. Doeppe,J. Sadowski,M. Sperl,W. Wegscheider###
(54125, 54125)
Metal-insulator transition and giant anisotropic magnetoresistance in ultra thin (Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 5, 'nm', 1],[149.0, 50, '%', 2]

As
###Metal-insulator transition and giant anisotropic magnetoresistance in ultra thin (Ga,Mn)As|R. R. Gareev,A. Petukhov,M. Schlapps,M. Doeppe,J. Sadowski,M. Sperl,W. Wegscheider###
(54127, 54127)
Metal-insulator transition and giant anisotropic magnetoresistance in ultra thin (Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 5, 'nm', 1],[147.0, 50, '%', 2]

Ga0.95Mn0.05As
###Metal-insulator transition and giant anisotropic magnetoresistance in ultra thin (Ga,Mn)As|R. R. Gareev,A. Petukhov,M. Schlapps,M. Doeppe,J. Sadowski,M. Sperl,W. Wegscheider###
(54142, 54146)
 MBE-grown, 5 nm-thick annealed Ga0.95Mn0.05As films with Tc90K demonstratetransition from metallic to insulating state below To10K, where sheetresistances Rshh/e2 and both longitudinal Rxx and transverse Rxy componentsbecome comparable.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.025,0,0,0,0,0,0.475,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 5, 'nm', 0],[128.0, 50, '%', 1]

Tc90K
###Metal-insulator transition and giant anisotropic magnetoresistance in ultra thin (Ga,Mn)As|R. R. Gareev,A. Petukhov,M. Schlapps,M. Doeppe,J. Sadowski,M. Sperl,W. Wegscheider###
(54152, 54154)
 MBE-grown, 5 nm-thick annealed Ga0.95Mn0.05As films with Tc90K demonstratetransition from metallic to insulating state below To10K, where sheetresistances Rshh/e2 and both longitudinal Rxx and transverse Rxy componentsbecome comparable.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.01098901098901099,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.989010989010989,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 5, 'nm', 0],[120.0, 50, '%', 1]

K
###Metal-insulator transition and giant anisotropic magnetoresistance in ultra thin (Ga,Mn)As|R. R. Gareev,A. Petukhov,M. Schlapps,M. Doeppe,J. Sadowski,M. Sperl,W. Wegscheider###
(54175, 54175)
 MBE-grown, 5 nm-thick annealed Ga0.95Mn0.05As films with Tc90K demonstratetransition from metallic to insulating state below To10K, where sheetresistances Rshh/e2 and both longitudinal Rxx and transverse Rxy componentsbecome comparable.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 5, 'nm', 0],[99.0, 50, '%', 1]

K
###Metal-insulator transition and giant anisotropic magnetoresistance in ultra thin (Ga,Mn)As|R. R. Gareev,A. Petukhov,M. Schlapps,M. Doeppe,J. Sadowski,M. Sperl,W. Wegscheider###
(54285, 54285)
 Below metal-insulator transition we found giant anisotropicmagnetoresistance (GAMR), which depends on orientation of magnetization tocrystallographic axes and manifests itself in positive magnetoresistance near50% for Rxx at T<missing VAR>1.7K, H//[110] crystallographic direction and parallel tocurrent in contrast to smaller and negative magnetoresistance for H//direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 5, 'nm', 1],[11.0, 50, '%', 0]

H
###Metal-insulator transition and giant anisotropic magnetoresistance in ultra thin (Ga,Mn)As|R. R. Gareev,A. Petukhov,M. Schlapps,M. Doeppe,J. Sadowski,M. Sperl,W. Wegscheider###
(54288, 54288)
 Below metal-insulator transition we found giant anisotropicmagnetoresistance (GAMR), which depends on orientation of magnetization tocrystallographic axes and manifests itself in positive magnetoresistance near50% for Rxx at T<missing VAR>1.7K, H//[110] crystallographic direction and parallel tocurrent in contrast to smaller and negative magnetoresistance for H//direction.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 5, 'nm', 1],[14.0, 50, '%', 0]

H
###Metal-insulator transition and giant anisotropic magnetoresistance in ultra thin (Ga,Mn)As|R. R. Gareev,A. Petukhov,M. Schlapps,M. Doeppe,J. Sadowski,M. Sperl,W. Wegscheider###
(54324, 54324)
 Below metal-insulator transition we found giant anisotropicmagnetoresistance (GAMR), which depends on orientation of magnetization tocrystallographic axes and manifests itself in positive magnetoresistance near50% for Rxx at T<missing VAR>1.7K, H//[110] crystallographic direction and parallel tocurrent in contrast to smaller and negative magnetoresistance for H//direction.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 5, 'nm', 1],[50.0, 50, '%', 0]

CoPd
###Impact of tunnel barrier strength on magnetoresistance in carbon nanotubes|Caitlin Morgan,Maciej Misiorny,Dominik Metten,Sebastian Heedt,Thomas Schäpers,Claus M. Schneider,Carola Meyer###
(54433, 54434)
 We investigate magnetoresistance in spin valves involving CoPd-contactedcarbon nanotubes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[191.0, 1.1, ',', 4]

Ge
###Heavily $n$-doped Ge: low-temperature magnetoresistance properties|A. Ferreira da Silva,M. A. Toloza Sandoval,A. Levine,E. Levinson,H. Boudinov,B. E. Sernelius###
(54675, 54675)
Heavily n<missing VAR>-doped Ge low-temperature magnetoresistance properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YSi
###Linear unsaturated magnetoresistance in YSi single crystal|Vikas Saini,Souvik Sasmal,Ruta Kulkarni,Arumugam Thamizhavel###
(55121, 55122)
Linear unsaturated magnetoresistance in YSi single crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YSi
###Linear unsaturated magnetoresistance in YSi single crystal|Vikas Saini,Souvik Sasmal,Ruta Kulkarni,Arumugam Thamizhavel###
(55206, 55207)
Here, we performed electrical transport measurements, in zero and appliedmagnetic fields, on the YSi single crystal along all three principalcrystallographic directions of the orthorhombic crystal structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Linear unsaturated magnetoresistance in YSi single crystal|Vikas Saini,Souvik Sasmal,Ruta Kulkarni,Arumugam Thamizhavel###
(55240, 55240)
 ForIparallel[001] and Hparallel[100] direction above approx 10T<missing VAR>,mobility fluctuation driven linear magnetoresistance is observed without anysign of saturation up to 14T<missing VAR> magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Linear unsaturated magnetoresistance in YSi single crystal|Vikas Saini,Souvik Sasmal,Ruta Kulkarni,Arumugam Thamizhavel###
(55248, 55248)
 ForIparallel[001] and Hparallel[100] direction above approx 10T<missing VAR>,mobility fluctuation driven linear magnetoresistance is observed without anysign of saturation up to 14T<missing VAR> magnetic field.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YSi
###Linear unsaturated magnetoresistance in YSi single crystal|Vikas Saini,Souvik Sasmal,Ruta Kulkarni,Arumugam Thamizhavel###
(55366, 55367)
 Kohler ruleviolation is observed in this system and Hall data signifies multiple chargecarriers in YSi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Magnetoresistance and Scaling Laws in Type-II Weyl Semimetal WP_2|V. Nagpal,K. S. Jat,S. Patnaik###
(55390, 55391)
Magnetoresistance and Scaling Laws in Type-II Weyl Semimetal WP2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WP2
###Magnetoresistance and Scaling Laws in Type-II Weyl Semimetal WP_2|V. Nagpal,K. S. Jat,S. Patnaik###
(55397, 55399)
Magnetoresistance and Scaling Laws in Type-II Weyl Semimetal WP2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Magnetoresistance and Scaling Laws in Type-II Weyl Semimetal WP_2|V. Nagpal,K. S. Jat,S. Patnaik###
(55505, 55506)
 Here, we study the magneto-transport properties of type-II WeylSemimetal WP2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WP2
###Magnetoresistance and Scaling Laws in Type-II Weyl Semimetal WP_2|V. Nagpal,K. S. Jat,S. Patnaik###
(55513, 55515)
 Here, we study the magneto-transport properties of type-II WeylSemimetal WP2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgAl2O4
###Enhanced magnetoresistance in perpendicular magnetic tunneling junctions with MgAl2O4 barrier|Pravin Khanal,Bowei Zhou,Magda Andrade,Christopher Mastrangelo,Ali Habiboglu,Arthur Enriquez,Daulton Fox,Kennedy Warrilow,Wei-Gang Wang###
(55627, 55631)
Enhanced magnetoresistance in perpendicular magnetic tunneling junctions with MgAl2O4 barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0.14285714285714285,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 2.25, 'mJ', 3],[122.0, 400, 'C', 3],[134.0, 60, '%', 4],[191.0, 1, 'V', 5]

MgAl2O4
###Enhanced magnetoresistance in perpendicular magnetic tunneling junctions with MgAl2O4 barrier|Pravin Khanal,Bowei Zhou,Magda Andrade,Christopher Mastrangelo,Ali Habiboglu,Arthur Enriquez,Daulton Fox,Kennedy Warrilow,Wei-Gang Wang###
(55646, 55650)
 Perpendicular magnetic tunnel junction with MgAl2O4 barrier is investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0.14285714285714285,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 2.25, 'mJ', 2],[103.0, 400, 'C', 2],[115.0, 60, '%', 3],[172.0, 1, 'V', 4]

F
###Enhanced magnetoresistance in perpendicular magnetic tunneling junctions with MgAl2O4 barrier|Pravin Khanal,Bowei Zhou,Magda Andrade,Christopher Mastrangelo,Ali Habiboglu,Arthur Enriquez,Daulton Fox,Kennedy Warrilow,Wei-Gang Wang###
(55671, 55671)
It is found that reactive R<missing VAR>F sputtering with O2 is essential to obtain strongperpendicular magnetic anisotropy and large tunneling magnetoresistance inMgAl2O4-based junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 2.25, 'mJ', 1],[82.0, 400, 'C', 1],[94.0, 60, '%', 2],[151.0, 1, 'V', 3]

O2
###Enhanced magnetoresistance in perpendicular magnetic tunneling junctions with MgAl2O4 barrier|Pravin Khanal,Bowei Zhou,Magda Andrade,Christopher Mastrangelo,Ali Habiboglu,Arthur Enriquez,Daulton Fox,Kennedy Warrilow,Wei-Gang Wang###
(55677, 55678)
It is found that reactive R<missing VAR>F sputtering with O2 is essential to obtain strongperpendicular magnetic anisotropy and large tunneling magnetoresistance inMgAl2O4-based junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 2.25, 'mJ', 1],[75.0, 400, 'C', 1],[87.0, 60, '%', 2],[144.0, 1, 'V', 3]

MgAl2O4
###Enhanced magnetoresistance in perpendicular magnetic tunneling junctions with MgAl2O4 barrier|Pravin Khanal,Bowei Zhou,Magda Andrade,Christopher Mastrangelo,Ali Habiboglu,Arthur Enriquez,Daulton Fox,Kennedy Warrilow,Wei-Gang Wang###
(55708, 55712)
It is found that reactive R<missing VAR>F sputtering with O2 is essential to obtain strongperpendicular magnetic anisotropy and large tunneling magnetoresistance inMgAl2O4-based junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0.14285714285714285,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 2.25, 'mJ', 1],[41.0, 400, 'C', 1],[53.0, 60, '%', 2],[110.0, 1, 'V', 3]

MgO
###Enhanced magnetoresistance in perpendicular magnetic tunneling junctions with MgAl2O4 barrier|Pravin Khanal,Bowei Zhou,Magda Andrade,Christopher Mastrangelo,Ali Habiboglu,Arthur Enriquez,Daulton Fox,Kennedy Warrilow,Wei-Gang Wang###
(55840, 55841)
 The Vhalf, biasvoltage at which tunneling magnetoresistance drops to half of the zero-biasvalue, is found to be about 1V, which is substantially higher than that ofMgO-based junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 2.25, 'mJ', 2],[87.0, 400, 'C', 2],[75.0, 60, '%', 1],[18.0, 1, 'V', 0]

Co2FeAl
###Impact of Boron doping to the tunneling magnetoresistance of Heusler alloy Co2FeAl|Ali Habiboglu,Yash Chandak,Pravin Khanal,Bowei Zhou,Carter Eckel,Jacob Cutshall Kennedy Warrilow,John O'Brien,John R. Schaibley,Brian J. Leroy,Wei-Gang Wang###
(56151, 56154)
Impact of Boron doping to the tunneling magnetoresistance of Heusler alloy Co2FeAl.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co2FeAl
###Impact of Boron doping to the tunneling magnetoresistance of Heusler alloy Co2FeAl|Ali Habiboglu,Yash Chandak,Pravin Khanal,Bowei Zhou,Carter Eckel,Jacob Cutshall Kennedy Warrilow,John O'Brien,John R. Schaibley,Brian J. Leroy,Wei-Gang Wang###
(56199, 56202)
 Here junctions withCo2FeAl as a ferromagnetic electrode are fabricated by room temperaturesputtering on Si/SiO2 substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si/SiO2
###Impact of Boron doping to the tunneling magnetoresistance of Heusler alloy Co2FeAl|Ali Habiboglu,Yash Chandak,Pravin Khanal,Bowei Zhou,Carter Eckel,Jacob Cutshall Kennedy Warrilow,John O'Brien,John R. Schaibley,Brian J. Leroy,Wei-Gang Wang###
(56227, 56231)
 Here junctions withCo2FeAl as a ferromagnetic electrode are fabricated by room temperaturesputtering on Si/SiO2 substrates.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Co2FeAl
###Impact of Boron doping to the tunneling magnetoresistance of Heusler alloy Co2FeAl|Ali Habiboglu,Yash Chandak,Pravin Khanal,Bowei Zhou,Carter Eckel,Jacob Cutshall Kennedy Warrilow,John O'Brien,John R. Schaibley,Brian J. Leroy,Wei-Gang Wang###
(56246, 56249)
 The doping of Boron in Co2FeAl is found tohave a large positive impact on the structural, magnetic and transportproperties of the junctions, with a reduced interfacial roughness andsubstantial improved tunneling magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Quasi-linear magnetoresistance in an almost 2D band structure|A. J. Schofield,J. R. Cooper###
(56571, 56571)
 The appearance of anew dimensionless scale, delta4t<missing VAR>perp/epsilonF, allows the possibility of anew region at intermediate fields where the magnetoresistance is linear inapplied magnetic field for currents flowing along the unixial direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 2, 'D', 2]

In
###Quasi-linear magnetoresistance in an almost 2D band structure|A. J. Schofield,J. R. Cooper###
(56653, 56653)
 In the limitof large anisotropy (small delta), corresponding to a quasi-two-dimensionalmetal made up of weakly coupled layers, we obtain an analytic expression forthe magnetoresistance valid for all magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 2, 'D', 4]

Sr2RuO4
###Quasi-linear magnetoresistance in an almost 2D band structure|A. J. Schofield,J. R. Cooper###
(56765, 56769)
 We test our analyticresults numerically and we compare our expressions with the c<missing VAR>-axismagnetoresistance of Sr2RuO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[263.0, 2, 'D', 5]

V3
###Spin flip scattering in magnetic junctions|F. Guinea###
(56949, 56950)
 ii) Magnon assisted tunneling reduces themagnetoresistance as T<missing VAR>3/2, and leads to a non ohmic contribution to theresistance which goes as V3/2, iii) Surface antiferromagnetic magnons,which may appear if the interface has different magnetic properties from thebulk, gives rise to T<missing VAR>2 and V2 contributions to the magnetoresistance andresistance, respectively, and, iv) Coulomb blockade effects may enhance themagnetoresistance, when transport is dominated by cotunneling processes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 2, ',', 0],[2.0, 2, ',', 0]

V2
###Spin flip scattering in magnetic junctions|F. Guinea###
(57005, 57006)
 ii) Magnon assisted tunneling reduces themagnetoresistance as T<missing VAR>3/2, and leads to a non ohmic contribution to theresistance which goes as V3/2, iii) Surface antiferromagnetic magnons,which may appear if the interface has different magnetic properties from thebulk, gives rise to T<missing VAR>2 and V2 contributions to the magnetoresistance andresistance, respectively, and, iv) Coulomb blockade effects may enhance themagnetoresistance, when transport is dominated by cotunneling processes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 2, ',', 0],[53.0, 2, ',', 0]

C
###A phenomenological model for magnetoresistance in granular polycrystalline colossal magnetoresistive materials: the role of spin polarised tunnelling at the grain boundaries|P. Raychaudhuri,T. K. Nath,A. K. Nigam,R. Pinto###
(57143, 57143)
 It has been observed that in bulk and polycrystalline thin films of collossalmagnetoresistive (CMR) materials the magnetoresistance follows a differentbehaviour compared to single crystals or single crystalline films below theferromagnetic transition temperature Tc.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###A phenomenological model for magnetoresistance in granular polycrystalline colossal magnetoresistive materials: the role of spin polarised tunnelling at the grain boundaries|P. Raychaudhuri,T. K. Nath,A. K. Nigam,R. Pinto###
(57190, 57190)
 It has been observed that in bulk and polycrystalline thin films of collossalmagnetoresistive (CMR) materials the magnetoresistance follows a differentbehaviour compared to single crystals or single crystalline films below theferromagnetic transition temperature Tc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###A phenomenological model for magnetoresistance in granular polycrystalline colossal magnetoresistive materials: the role of spin polarised tunnelling at the grain boundaries|P. Raychaudhuri,T. K. Nath,A. K. Nigam,R. Pinto###
(57193, 57193)
 In this paper we develop aphenomenological model to explain the magnetic field dependence of resistancein granular CMR materials taking into account the spin polarised tunnelling atthe grain boundaries.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###A phenomenological model for magnetoresistance in granular polycrystalline colossal magnetoresistive materials: the role of spin polarised tunnelling at the grain boundaries|P. Raychaudhuri,T. K. Nath,A. K. Nigam,R. Pinto###
(57231, 57231)
 In this paper we develop aphenomenological model to explain the magnetic field dependence of resistancein granular CMR materials taking into account the spin polarised tunnelling atthe grain boundaries.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.55Ho0.15Sr0.3MnO3
###A phenomenological model for magnetoresistance in granular polycrystalline colossal magnetoresistive materials: the role of spin polarised tunnelling at the grain boundaries|P. Raychaudhuri,T. K. Nath,A. K. Nigam,R. Pinto###
(57282, 57290)
 The model has been fitted to two systems, namely,La0.55Ho0.15Sr0.3MnO3 and La1.8Y0.5Ca0.7Mn2O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.11000000000000001,0,0,0,0,0,0,0,0,0,0.03,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La1.8Y0.5Ca0.7Mn2O7
###A phenomenological model for magnetoresistance in granular polycrystalline colossal magnetoresistive materials: the role of spin polarised tunnelling at the grain boundaries|P. Raychaudhuri,T. K. Nath,A. K. Nigam,R. Pinto###
(57294, 57303)
 The model has been fitted to two systems, namely,La0.55Ho0.15Sr0.3MnO3 and La1.8Y0.5Ca0.7Mn2O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0.05833333333333333,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.041666666666666664,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.55Ho0.15Sr0.3MnO3
###A phenomenological model for magnetoresistance in granular polycrystalline colossal magnetoresistive materials: the role of spin polarised tunnelling at the grain boundaries|P. Raychaudhuri,T. K. Nath,A. K. Nigam,R. Pinto###
(57326, 57334)
 From the fitted result we haveseparated out, in La0.55Ho0.15Sr0.3MnO3, the intrinsic contribution from theintergranular contribution to the magnetoresistance coming from spin polarisedtunnelling at the grain boundaries.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.11000000000000001,0,0,0,0,0,0,0,0,0,0.03,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.55Ho0.15Sr0.3MnO3
###A phenomenological model for magnetoresistance in granular polycrystalline colossal magnetoresistive materials: the role of spin polarised tunnelling at the grain boundaries|P. Raychaudhuri,T. K. Nath,A. K. Nigam,R. Pinto###
(57410, 57418)
 It is observed that the temperaturedependence of the intrinsic contribution to the magnetoresistance inLa0.55Ho0.15Sr0.3MnO3 follows the prediction of double exchange model for allvalues of field.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.11000000000000001,0,0,0,0,0,0,0,0,0,0.03,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La2
###An ordered stack of spin valves in a layered magnetoresistive perovskite|T. G. Perring,G. Aeppli,T. Kimura,Y. Tokura,M. A. Adams###
(57483, 57484)
 The layered compound La2-2x<missing VAR>Sr12x<missing VAR>Mn2O7 (x<missing VAR>0.3) consists of bilayers ofmetallic MnO2 sheets separated by insulating material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[171.0, 1.5, 'Tesla', 2]

Sr12
###An ordered stack of spin valves in a layered magnetoresistive perovskite|T. G. Perring,G. Aeppli,T. Kimura,Y. Tokura,M. A. Adams###
(57488, 57490)
 The layered compound La2-2x<missing VAR>Sr12x<missing VAR>Mn2O7 (x<missing VAR>0.3) consists of bilayers ofmetallic MnO2 sheets separated by insulating material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 1.5, 'Tesla', 2]

Mn2O7
###An ordered stack of spin valves in a layered magnetoresistive perovskite|T. G. Perring,G. Aeppli,T. Kimura,Y. Tokura,M. A. Adams###
(57492, 57495)
 The layered compound La2-2x<missing VAR>Sr12x<missing VAR>Mn2O7 (x<missing VAR>0.3) consists of bilayers ofmetallic MnO2 sheets separated by insulating material.
Featurization terminated normally.
0,0,0,0,0,0,0,0.7777777777777778,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 1.5, 'Tesla', 2]

MnO2
###An ordered stack of spin valves in a layered magnetoresistive perovskite|T. G. Perring,G. Aeppli,T. Kimura,Y. Tokura,M. A. Adams###
(57513, 57515)
 The layered compound La2-2x<missing VAR>Sr12x<missing VAR>Mn2O7 (x<missing VAR>0.3) consists of bilayers ofmetallic MnO2 sheets separated by insulating material.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 1.5, 'Tesla', 2]

C90
###An ordered stack of spin valves in a layered magnetoresistive perovskite|T. G. Perring,G. Aeppli,T. Kimura,Y. Tokura,M. A. Adams###
(57563, 57564)
 The compound exhibitsmarkedly anisotropic magnetoresistance at temperatures well below thethree-dimensional magnetic ordering temperature T<missing VAR>C90 K in addition to colossalmagnetoresistance around T<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 1.5, 'Tesla', 1]

K
###An ordered stack of spin valves in a layered magnetoresistive perovskite|T. G. Perring,G. Aeppli,T. Kimura,Y. Tokura,M. A. Adams###
(57566, 57566)
 The compound exhibitsmarkedly anisotropic magnetoresistance at temperatures well below thethree-dimensional magnetic ordering temperature T<missing VAR>C90 K in addition to colossalmagnetoresistance around T<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 1.5, 'Tesla', 1]

C
###An ordered stack of spin valves in a layered magnetoresistive perovskite|T. G. Perring,G. Aeppli,T. Kimura,Y. Tokura,M. A. Adams###
(57582, 57582)
 The compound exhibitsmarkedly anisotropic magnetoresistance at temperatures well below thethree-dimensional magnetic ordering temperature T<missing VAR>C90 K in addition to colossalmagnetoresistance around T<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 1.5, 'Tesla', 1]

La0.55Ho0.15Sr0.3MnO3
###The effect of the total density of states at Fermi level on spin polarised tunnelling in granular La0.55Ho0.15Sr0.3MnO3|P. Raychaudhuri,A. K. Nigam,R. Pinto,Sujeet Chaudhary,S. B. Roy###
(57832, 57840)
The effect of the total density of states at Fermi level on spin polarised tunnelling in granular La0.55Ho0.15Sr0.3MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.11000000000000001,0,0,0,0,0,0,0,0,0,0.03,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 255, 'K', 2]

La0.55Ho0.15Sr0.3MnO3
###The effect of the total density of states at Fermi level on spin polarised tunnelling in granular La0.55Ho0.15Sr0.3MnO3|P. Raychaudhuri,A. K. Nigam,R. Pinto,Sujeet Chaudhary,S. B. Roy###
(57882, 57890)
 We study the spin polarised tunnelling mechanism through magnetisation andmagnetoresistance in the granular polycrystalline colossal magnetoresistivemanganite, La0.55Ho0.15Sr0.3MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.11000000000000001,0,0,0,0,0,0,0,0,0,0.03,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 255, 'K', 1]

(Tc)
###The effect of the total density of states at Fermi level on spin polarised tunnelling in granular La0.55Ho0.15Sr0.3MnO3|P. Raychaudhuri,A. K. Nigam,R. Pinto,Sujeet Chaudhary,S. B. Roy###
(57908, 57910)
 This system has a ferromagnetic transitiontemperature (Tc) of 255 K associated with a metal-insulator transition aroundthe same temperature.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 255, 'K', 0]

La0.7Sr0.3MnO3
###The effect of the total density of states at Fermi level on spin polarised tunnelling in granular La0.55Ho0.15Sr0.3MnO3|P. Raychaudhuri,A. K. Nigam,R. Pinto,Sujeet Chaudhary,S. B. Roy###
(58032, 58038)
 We discuss the significance of our results within the realm of amodel recently proposed by us to explain the spin polarised tunnelling ingranular La0.7Sr0.3MnO3, in the light of the recent finding by A.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 255, 'K', 2]

YBa2Cu3O6
###Ando, Lavrov, and Segawa Reply|Yoichi Ando,A. N. Lavrov,Kouji Segawa###
(58186, 58192)
 [cond-mat/0005275] on ourarticle, Magnetoresistance Anomalies in AntiferromagneticYBa2Cu3O6x<missing VAR> Fingerprints of Charged Stripes [cond-mat/9905071, Phys.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 9905071, ',', 0],[29.0, 83, ',', 3]

Y1-xGd
###Anomalous magnetotransport in (Y$_{1-x}$Gd$_{x}$)Co$_{2}$ alloys: interplay of disorder and itinerant metamagnetism|A. T. Burkov,A. Yu. Zyuzin,T. Nakama,K. Yagasaki###
(58558, 58562)
Anomalous magnetotransport in (Y1-xGdx)Co2 alloys interplay of disorder and itinerant metamagnetism.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

Co2
###Anomalous magnetotransport in (Y$_{1-x}$Gd$_{x}$)Co$_{2}$ alloys: interplay of disorder and itinerant metamagnetism|A. T. Burkov,A. Yu. Zyuzin,T. Nakama,K. Yagasaki###
(58565, 58566)
Anomalous magnetotransport in (Y1-xGdx)Co2 alloys interplay of disorder and itinerant metamagnetism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Y1-xGd
###Anomalous magnetotransport in (Y$_{1-x}$Gd$_{x}$)Co$_{2}$ alloys: interplay of disorder and itinerant metamagnetism|A. T. Burkov,A. Yu. Zyuzin,T. Nakama,K. Yagasaki###
(58645, 58649)
 New mechanism of magnetoresistivity in itinerant metamagnets with astructural disorder is introduced basing on analysis of experimental results onmagnetoresistivity, susceptibility, and magnetization of structurallydisordered alloys (Y1-xGdx)Co2.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

Co2
###Anomalous magnetotransport in (Y$_{1-x}$Gd$_{x}$)Co$_{2}$ alloys: interplay of disorder and itinerant metamagnetism|A. T. Burkov,A. Yu. Zyuzin,T. Nakama,K. Yagasaki###
(58652, 58653)
 New mechanism of magnetoresistivity in itinerant metamagnets with astructural disorder is introduced basing on analysis of experimental results onmagnetoresistivity, susceptibility, and magnetization of structurallydisordered alloys (Y1-xGdx)Co2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Anomalous magnetotransport in (Y$_{1-x}$Gd$_{x}$)Co$_{2}$ alloys: interplay of disorder and itinerant metamagnetism|A. T. Burkov,A. Yu. Zyuzin,T. Nakama,K. Yagasaki###
(58656, 58656)
 In this series, YCo2 is anenhanced Pauli paramagnet, whereas GdCo2 is a ferrimagnet (T<missing VAR>rm c<missing VAR>400K) with Gd sublattice coupled antiferromagnetically to the itinerant Co-3d<missing VAR>electrons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YCo2
###Anomalous magnetotransport in (Y$_{1-x}$Gd$_{x}$)Co$_{2}$ alloys: interplay of disorder and itinerant metamagnetism|A. T. Burkov,A. Yu. Zyuzin,T. Nakama,K. Yagasaki###
(58663, 58665)
 In this series, YCo2 is anenhanced Pauli paramagnet, whereas GdCo2 is a ferrimagnet (T<missing VAR>rm c<missing VAR>400K) with Gd sublattice coupled antiferromagnetically to the itinerant Co-3d<missing VAR>electrons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GdCo2
###Anomalous magnetotransport in (Y$_{1-x}$Gd$_{x}$)Co$_{2}$ alloys: interplay of disorder and itinerant metamagnetism|A. T. Burkov,A. Yu. Zyuzin,T. Nakama,K. Yagasaki###
(58681, 58683)
 In this series, YCo2 is anenhanced Pauli paramagnet, whereas GdCo2 is a ferrimagnet (T<missing VAR>rm c<missing VAR>400K) with Gd sublattice coupled antiferromagnetically to the itinerant Co-3d<missing VAR>electrons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Anomalous magnetotransport in (Y$_{1-x}$Gd$_{x}$)Co$_{2}$ alloys: interplay of disorder and itinerant metamagnetism|A. T. Burkov,A. Yu. Zyuzin,T. Nakama,K. Yagasaki###
(58699, 58699)
 In this series, YCo2 is anenhanced Pauli paramagnet, whereas GdCo2 is a ferrimagnet (T<missing VAR>rm c<missing VAR>400K) with Gd sublattice coupled antiferromagnetically to the itinerant Co-3d<missing VAR>electrons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Gd
###Anomalous magnetotransport in (Y$_{1-x}$Gd$_{x}$)Co$_{2}$ alloys: interplay of disorder and itinerant metamagnetism|A. T. Burkov,A. Yu. Zyuzin,T. Nakama,K. Yagasaki###
(58704, 58704)
 In this series, YCo2 is anenhanced Pauli paramagnet, whereas GdCo2 is a ferrimagnet (T<missing VAR>rm c<missing VAR>400K) with Gd sublattice coupled antiferromagnetically to the itinerant Co-3d<missing VAR>electrons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Anomalous magnetotransport in (Y$_{1-x}$Gd$_{x}$)Co$_{2}$ alloys: interplay of disorder and itinerant metamagnetism|A. T. Burkov,A. Yu. Zyuzin,T. Nakama,K. Yagasaki###
(58718, 58718)
 In this series, YCo2 is anenhanced Pauli paramagnet, whereas GdCo2 is a ferrimagnet (T<missing VAR>rm c<missing VAR>400K) with Gd sublattice coupled antiferromagnetically to the itinerant Co-3d<missing VAR>electrons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Anomalous magnetotransport in (Y$_{1-x}$Gd$_{x}$)Co$_{2}$ alloys: interplay of disorder and itinerant metamagnetism|A. T. Burkov,A. Yu. Zyuzin,T. Nakama,K. Yagasaki###
(58824, 58824)
 We show that this unusual feature is linked toa combination of structural disorder and metamagnetic instability of itinerantCo-3d<missing VAR> electrons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N(S)
###Comment on: "Current-voltage characteristics and zero-resistance state in 2DEG"|M. V. Cheremisin###
(58915, 58918)
 We demonstrate that N(S)-shape current-voltage characteristics proposed toexplain zero-resistance state in Corbino(Hall bar) geometry 2DEG(cond-mat/0302063, cond-mat/0303530) cannot account essential features ofradiation-induced magnetoresistance oscillations experiments.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 2, 'DEG', 1],[33.0, 2, 'DEG', 0],[41.0, 302063, ',', 0]

La2-x
###High field magnetoresistivity of epitaxial La2-xSrxCuO4 thin films|J. Vanacken,L. Weckhuysen,T. Wambecq,P. Wagner,V. V. Moshchalkov###
(59009, 59012)
High field magnetoresistivity of epitaxial La2-xSrxCuO4 thin films.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

CuO4
###High field magnetoresistivity of epitaxial La2-xSrxCuO4 thin films|J. Vanacken,L. Weckhuysen,T. Wambecq,P. Wagner,V. V. Moshchalkov###
(59014, 59016)
High field magnetoresistivity of epitaxial La2-xSrxCuO4 thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La2-x
###High field magnetoresistivity of epitaxial La2-xSrxCuO4 thin films|J. Vanacken,L. Weckhuysen,T. Wambecq,P. Wagner,V. V. Moshchalkov###
(59060, 59063)
 A large positive magnetoresistivity (up to tens of percents) is observed inboth underdoped and overdoped superconducting La2-xSrxCuO4 epitaxial thin filmsat temperatures far above the superconducting critical temperature Tc.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

CuO4
###High field magnetoresistivity of epitaxial La2-xSrxCuO4 thin films|J. Vanacken,L. Weckhuysen,T. Wambecq,P. Wagner,V. V. Moshchalkov###
(59065, 59067)
 A large positive magnetoresistivity (up to tens of percents) is observed inboth underdoped and overdoped superconducting La2-xSrxCuO4 epitaxial thin filmsat temperatures far above the superconducting critical temperature Tc.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###High field magnetoresistivity of epitaxial La2-xSrxCuO4 thin films|J. Vanacken,L. Weckhuysen,T. Wambecq,P. Wagner,V. V. Moshchalkov###
(59092, 59092)
 A large positive magnetoresistivity (up to tens of percents) is observed inboth underdoped and overdoped superconducting La2-xSrxCuO4 epitaxial thin filmsat temperatures far above the superconducting critical temperature Tc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###High field magnetoresistivity of epitaxial La2-xSrxCuO4 thin films|J. Vanacken,L. Weckhuysen,T. Wambecq,P. Wagner,V. V. Moshchalkov###
(59113, 59113)
 For theunderdoped samples, this magnetoresistance far above Tc cannot be described bythe Kohler rule and we believe it is to be attributed to the influence ofsuperconducting fluctuations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###High field magnetoresistivity of epitaxial La2-xSrxCuO4 thin films|J. Vanacken,L. Weckhuysen,T. Wambecq,P. Wagner,V. V. Moshchalkov###
(59160, 59160)
 In the underdoped regime, the largemagnetoresistance is only present when at low temperatures superconductivityoccurs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###High field magnetoresistivity of epitaxial La2-xSrxCuO4 thin films|J. Vanacken,L. Weckhuysen,T. Wambecq,P. Wagner,V. V. Moshchalkov###
(59218, 59218)
 The strong magnetoresistivity, which persists even at temperatures farabove Tc, can be related to the pairs forming eventually the superconductingstate below Tc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###High field magnetoresistivity of epitaxial La2-xSrxCuO4 thin films|J. Vanacken,L. Weckhuysen,T. Wambecq,P. Wagner,V. V. Moshchalkov###
(59246, 59246)
 The strong magnetoresistivity, which persists even at temperatures farabove Tc, can be related to the pairs forming eventually the superconductingstate below Tc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###High field magnetoresistivity of epitaxial La2-xSrxCuO4 thin films|J. Vanacken,L. Weckhuysen,T. Wambecq,P. Wagner,V. V. Moshchalkov###
(59303, 59303)
 Our observations support the idea of a close relation betweenthe pseudogap and the superconducting gap and provide new indications for thepresence of pairs above Tc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Ballistic magnetoresistance in nickel single-atom conductors|Matthew R. Sullivan,Douglas A. Boehm,Daniel A. Ateya,Susan Z. Hua,Harsh Deep Chopra###
(59336, 59336)
 Large ballistic magnetoresistance (BMR) has been measured in Ni single-atomconductors electrodeposited between microfabricated thin films.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Ballistic magnetoresistance in nickel single-atom conductors|Matthew R. Sullivan,Douglas A. Boehm,Daniel A. Ateya,Susan Z. Hua,Harsh Deep Chopra###
(59349, 59349)
 Large ballistic magnetoresistance (BMR) has been measured in Ni single-atomconductors electrodeposited between microfabricated thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Ballistic magnetoresistance in nickel single-atom conductors|Matthew R. Sullivan,Douglas A. Boehm,Daniel A. Ateya,Susan Z. Hua,Harsh Deep Chopra###
(59391, 59391)
 Thesemeasurements irrefutably eliminate any magnetostriction related artifacts inthe BMR effect.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La1-x
###Low temperature charge ordering versus grain boundary effects in polycrystalline La1-xCaxMnO3 manganites|E. Rozenberg###
(59426, 59429)
Low temperature charge ordering versus grain boundary effects in polycrystalline La1-xCaxMnO3 manganites.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

MnO3
###Low temperature charge ordering versus grain boundary effects in polycrystalline La1-xCaxMnO3 manganites|E. Rozenberg###
(59431, 59433)
Low temperature charge ordering versus grain boundary effects in polycrystalline La1-xCaxMnO3 manganites.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Low temperature charge ordering versus grain boundary effects in polycrystalline La1-xCaxMnO3 manganites|E. Rozenberg###
(59438, 59438)
 In this communication the enhancement of low temperature magnetoresistance inpolycrystalline La1-xCaxMnO3 manganites is discussed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La1-x
###Low temperature charge ordering versus grain boundary effects in polycrystalline La1-xCaxMnO3 manganites|E. Rozenberg###
(59461, 59464)
 In this communication the enhancement of low temperature magnetoresistance inpolycrystalline La1-xCaxMnO3 manganites is discussed.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

MnO3
###Low temperature charge ordering versus grain boundary effects in polycrystalline La1-xCaxMnO3 manganites|E. Rozenberg###
(59466, 59468)
 In this communication the enhancement of low temperature magnetoresistance inpolycrystalline La1-xCaxMnO3 manganites is discussed.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Large magnetoresistance in $π$-conjugated semiconductor thin film devices|Ö. Mermer,G. Veeraraghavan,T. L. Francis,Y. Sheng,D. T. Nguyen,M. Wohlgenannt,A. Köhler,M. K. Al-Suti,M. S. Khan###
(59662, 59662)
 The measurementswere performed at different temperatures, ranging from 10K to 300K, and atmagnetic fields, B < 100mT.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 10, 'K', 0],[13.0, 300, 'K', 0],[3.0, 100, 'mT', 0],[26.0, 10, '%', 1],[30.0, 300, 'K', 1],[33.0, 10, 'mT', 1]

H
###Large linear magnetoresistivity in strongly inhomogeneous planar and layered systems|S. A. Bulgadaev,F. V. Kusmartsev###
(59955, 59955)
 These expressions allow to describe themagnetoresistance of various inhomogeneous media at arbitrary concentrationsx<missing VAR> and magnetic fields H.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Large linear magnetoresistivity in strongly inhomogeneous planar and layered systems|S. A. Bulgadaev,F. V. Kusmartsev###
(60004, 60004)
 The corresponding plots of the x<missing VAR>- and H-dependencies ofR(x,H) are represented for various values, respectively, of magnetic fieldand concentrations at some values of inhomogeneity parameter.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Large linear magnetoresistivity in strongly inhomogeneous planar and layered systems|S. A. Bulgadaev,F. V. Kusmartsev###
(60015, 60015)
 The corresponding plots of the x<missing VAR>- and H-dependencies ofR(x,H) are represented for various values, respectively, of magnetic fieldand concentrations at some values of inhomogeneity parameter.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ag2
###Large linear magnetoresistivity in strongly inhomogeneous planar and layered systems|S. A. Bulgadaev,F. V. Kusmartsev###
(60094, 60095)
 The obtainedresults show a remarkable similarity with the existing experimental data onlinear magnetoresistance in silver chalcogenides Ag2deltaSe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Se
###Large linear magnetoresistivity in strongly inhomogeneous planar and layered systems|S. A. Bulgadaev,F. V. Kusmartsev###
(60097, 60097)
 The obtainedresults show a remarkable similarity with the existing experimental data onlinear magnetoresistance in silver chalcogenides Ag2deltaSe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeSb2
###Colossal Positive Magnetoresistance in a Doped Nearly Magnetic Semiconductor|Rongwei Hu,K. J. Thomas,Y. Lee,T. Vogt,E. S. Choi,V. F. Mitrovic,R. P. Hermann,F. Grandjean,P. C. Canfield,J. W. Kim,A. I. Goldman,C. Petrovic###
(60545, 60547)
 We report on a positive colossal magnetoresistance (MR) induced bymetallization of FeSb2, a nearly magnetic or Kondo semiconductor with 3dions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 3, 'd', 0]

InSb
###Weak field magnetoresistance of narrow-gap semiconductors InSb|R. Yang,G. L. Yu,Yanhui Zhang,P. P. Chen###
(60973, 60974)
Weak field magnetoresistance of narrow-gap semiconductors InSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

InSb
###Weak field magnetoresistance of narrow-gap semiconductors InSb|R. Yang,G. L. Yu,Yanhui Zhang,P. P. Chen###
(60983, 60984)
 The magnetoresistance of InSb has been intensively investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

InSb
###Weak field magnetoresistance of narrow-gap semiconductors InSb|R. Yang,G. L. Yu,Yanhui Zhang,P. P. Chen###
(61018, 61019)
 Theexperiments we perform here focus on weak field magnetoresistance of InSb thinfilm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

InSb
###Weak field magnetoresistance of narrow-gap semiconductors InSb|R. Yang,G. L. Yu,Yanhui Zhang,P. P. Chen###
(61037, 61038)
 We investigate the magnetoresistance of InSb films in perpendicular,tilted as well as parallel magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

InSb
###Weak field magnetoresistance of narrow-gap semiconductors InSb|R. Yang,G. L. Yu,Yanhui Zhang,P. P. Chen###
(61086, 61087)
 Our results verify the previousobservations concerning weak localization effect in InSb thin film.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

InSb
###Weak field magnetoresistance of narrow-gap semiconductors InSb|R. Yang,G. L. Yu,Yanhui Zhang,P. P. Chen###
(61114, 61115)
 Moreover,we systematically study the anisotropy of magnetoresistance of InSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

InSb
###Weak field magnetoresistance of narrow-gap semiconductors InSb|R. Yang,G. L. Yu,Yanhui Zhang,P. P. Chen###
(61154, 61155)
 We findthat the existence of in-plane field can effectively suppress the weaklocalization effect of InSb film.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B2
###Linear magnetoresistivity in the ternary AM2B2 and A3Rh8B6 phases (A = Ca, Sr; M = Rh, Ir)|Hiroyuki Takeya,Mohammed ElMassalami###
(61287, 61288)
Linear magnetoresistivity in the ternary AM<missing VAR>2B2 and A3Rh8B6 phases (A  Ca, Sr; M<missing VAR>  Rh, Ir).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 1.8, '<', 1],[98.0, 0, '<', 1],[213.0, 1200, '%', 4]

Rh8B6
###Linear magnetoresistivity in the ternary AM2B2 and A3Rh8B6 phases (A = Ca, Sr; M = Rh, Ir)|Hiroyuki Takeya,Mohammed ElMassalami###
(61294, 61297)
Linear magnetoresistivity in the ternary AM<missing VAR>2B2 and A3Rh8B6 phases (A  Ca, Sr; M<missing VAR>  Rh, Ir).
Featurization terminated normally.
0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 1.8, '<', 1],[89.0, 0, '<', 1],[204.0, 1200, '%', 4]

Ca
###Linear magnetoresistivity in the ternary AM2B2 and A3Rh8B6 phases (A = Ca, Sr; M = Rh, Ir)|Hiroyuki Takeya,Mohammed ElMassalami###
(61305, 61305)
Linear magnetoresistivity in the ternary AM<missing VAR>2B2 and A3Rh8B6 phases (A  Ca, Sr; M<missing VAR>  Rh, Ir).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 1.8, '<', 1],[81.0, 0, '<', 1],[196.0, 1200, '%', 4]

Sr
###Linear magnetoresistivity in the ternary AM2B2 and A3Rh8B6 phases (A = Ca, Sr; M = Rh, Ir)|Hiroyuki Takeya,Mohammed ElMassalami###
(61308, 61308)
Linear magnetoresistivity in the ternary AM<missing VAR>2B2 and A3Rh8B6 phases (A  Ca, Sr; M<missing VAR>  Rh, Ir).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 1.8, '<', 1],[78.0, 0, '<', 1],[193.0, 1200, '%', 4]

Rh
###Linear magnetoresistivity in the ternary AM2B2 and A3Rh8B6 phases (A = Ca, Sr; M = Rh, Ir)|Hiroyuki Takeya,Mohammed ElMassalami###
(61314, 61314)
Linear magnetoresistivity in the ternary AM<missing VAR>2B2 and A3Rh8B6 phases (A  Ca, Sr; M<missing VAR>  Rh, Ir).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 1.8, '<', 1],[72.0, 0, '<', 1],[187.0, 1200, '%', 4]

Ir
###Linear magnetoresistivity in the ternary AM2B2 and A3Rh8B6 phases (A = Ca, Sr; M = Rh, Ir)|Hiroyuki Takeya,Mohammed ElMassalami###
(61317, 61317)
Linear magnetoresistivity in the ternary AM<missing VAR>2B2 and A3Rh8B6 phases (A  Ca, Sr; M<missing VAR>  Rh, Ir).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 1.8, '<', 1],[69.0, 0, '<', 1],[184.0, 1200, '%', 4]

B2
###Linear magnetoresistivity in the ternary AM2B2 and A3Rh8B6 phases (A = Ca, Sr; M = Rh, Ir)|Hiroyuki Takeya,Mohammed ElMassalami###
(61336, 61337)
 We studied the magnetoresistivity of the AM<missing VAR>2B2 and A3Rh8B6 (A  Ca, Sr; M<missing VAR> Rh, Ir) compounds within the ranges 1.8<T<missing VAR><300 K and 0<H<50 k<missing VAR>Oe.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 1.8, '<', 0],[49.0, 0, '<', 0],[164.0, 1200, '%', 3]

Rh8B6
###Linear magnetoresistivity in the ternary AM2B2 and A3Rh8B6 phases (A = Ca, Sr; M = Rh, Ir)|Hiroyuki Takeya,Mohammed ElMassalami###
(61343, 61346)
 We studied the magnetoresistivity of the AM<missing VAR>2B2 and A3Rh8B6 (A  Ca, Sr; M<missing VAR> Rh, Ir) compounds within the ranges 1.8<T<missing VAR><300 K and 0<H<50 k<missing VAR>Oe.
Featurization terminated normally.
0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 1.8, '<', 0],[40.0, 0, '<', 0],[155.0, 1200, '%', 3]

Ca
###Linear magnetoresistivity in the ternary AM2B2 and A3Rh8B6 phases (A = Ca, Sr; M = Rh, Ir)|Hiroyuki Takeya,Mohammed ElMassalami###
(61352, 61352)
 We studied the magnetoresistivity of the AM<missing VAR>2B2 and A3Rh8B6 (A  Ca, Sr; M<missing VAR> Rh, Ir) compounds within the ranges 1.8<T<missing VAR><300 K and 0<H<50 k<missing VAR>Oe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 1.8, '<', 0],[34.0, 0, '<', 0],[149.0, 1200, '%', 3]

Sr
###Linear magnetoresistivity in the ternary AM2B2 and A3Rh8B6 phases (A = Ca, Sr; M = Rh, Ir)|Hiroyuki Takeya,Mohammed ElMassalami###
(61355, 61355)
 We studied the magnetoresistivity of the AM<missing VAR>2B2 and A3Rh8B6 (A  Ca, Sr; M<missing VAR> Rh, Ir) compounds within the ranges 1.8<T<missing VAR><300 K and 0<H<50 k<missing VAR>Oe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 1.8, '<', 0],[31.0, 0, '<', 0],[146.0, 1200, '%', 3]

Rh
###Linear magnetoresistivity in the ternary AM2B2 and A3Rh8B6 phases (A = Ca, Sr; M = Rh, Ir)|Hiroyuki Takeya,Mohammed ElMassalami###
(61362, 61362)
 We studied the magnetoresistivity of the AM<missing VAR>2B2 and A3Rh8B6 (A  Ca, Sr; M<missing VAR> Rh, Ir) compounds within the ranges 1.8<T<missing VAR><300 K and 0<H<50 k<missing VAR>Oe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 1.8, '<', 0],[24.0, 0, '<', 0],[139.0, 1200, '%', 3]

Ir
###Linear magnetoresistivity in the ternary AM2B2 and A3Rh8B6 phases (A = Ca, Sr; M = Rh, Ir)|Hiroyuki Takeya,Mohammed ElMassalami###
(61365, 61365)
 We studied the magnetoresistivity of the AM<missing VAR>2B2 and A3Rh8B6 (A  Ca, Sr; M<missing VAR> Rh, Ir) compounds within the ranges 1.8<T<missing VAR><300 K and 0<H<50 k<missing VAR>Oe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 1.8, '<', 0],[21.0, 0, '<', 0],[136.0, 1200, '%', 3]

K
###Linear magnetoresistivity in the ternary AM2B2 and A3Rh8B6 phases (A = Ca, Sr; M = Rh, Ir)|Hiroyuki Takeya,Mohammed ElMassalami###
(61382, 61382)
 We studied the magnetoresistivity of the AM<missing VAR>2B2 and A3Rh8B6 (A  Ca, Sr; M<missing VAR> Rh, Ir) compounds within the ranges 1.8<T<missing VAR><300 K and 0<H<50 k<missing VAR>Oe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 1.8, '<', 0],[4.0, 0, '<', 0],[119.0, 1200, '%', 3]

H
###Linear magnetoresistivity in the ternary AM2B2 and A3Rh8B6 phases (A = Ca, Sr; M = Rh, Ir)|Hiroyuki Takeya,Mohammed ElMassalami###
(61388, 61388)
 We studied the magnetoresistivity of the AM<missing VAR>2B2 and A3Rh8B6 (A  Ca, Sr; M<missing VAR> Rh, Ir) compounds within the ranges 1.8<T<missing VAR><300 K and 0<H<50 k<missing VAR>Oe.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 1.8, '<', 0],[2.0, 0, '<', 0],[113.0, 1200, '%', 3]

H
###Linear magnetoresistivity in the ternary AM2B2 and A3Rh8B6 phases (A = Ca, Sr; M = Rh, Ir)|Hiroyuki Takeya,Mohammed ElMassalami###
(61449, 61449)
 A positive, nonsaturating, and dominantlylinear-in-H magnetoresistivity was observed in all samples, including the oneswith a superconducting ground state.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 1.8, '<', 2],[63.0, 0, '<', 2],[52.0, 1200, '%', 1]

(H)
###Linear magnetoresistivity in the ternary AM2B2 and A3Rh8B6 phases (A = Ca, Sr; M = Rh, Ir)|Hiroyuki Takeya,Mohammed ElMassalami###
(61487, 61489)
 Such DeltarhoT<missing VAR>(H)/rhoT<missing VAR>(0),reaching 1200% in favorable cases, was found to be much stronger for the AM<missing VAR>2B2compounds and to decrease with temperature as well as when Ca is replaced bySr, or Rh is replaced by Ir.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 1.8, '<', 3],[101.0, 0, '<', 3],[12.0, 1200, '%', 0]

B2
###Linear magnetoresistivity in the ternary AM2B2 and A3Rh8B6 phases (A = Ca, Sr; M = Rh, Ir)|Hiroyuki Takeya,Mohammed ElMassalami###
(61530, 61531)
 Such DeltarhoT<missing VAR>(H)/rhoT<missing VAR>(0),reaching 1200% in favorable cases, was found to be much stronger for the AM<missing VAR>2B2compounds and to decrease with temperature as well as when Ca is replaced bySr, or Rh is replaced by Ir.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 1.8, '<', 3],[144.0, 0, '<', 3],[29.0, 1200, '%', 0]

Ca
###Linear magnetoresistivity in the ternary AM2B2 and A3Rh8B6 phases (A = Ca, Sr; M = Rh, Ir)|Hiroyuki Takeya,Mohammed ElMassalami###
(61554, 61554)
 Such DeltarhoT<missing VAR>(H)/rhoT<missing VAR>(0),reaching 1200% in favorable cases, was found to be much stronger for the AM<missing VAR>2B2compounds and to decrease with temperature as well as when Ca is replaced bySr, or Rh is replaced by Ir.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 1.8, '<', 3],[168.0, 0, '<', 3],[53.0, 1200, '%', 0]

Sr
###Linear magnetoresistivity in the ternary AM2B2 and A3Rh8B6 phases (A = Ca, Sr; M = Rh, Ir)|Hiroyuki Takeya,Mohammed ElMassalami###
(61563, 61563)
 Such DeltarhoT<missing VAR>(H)/rhoT<missing VAR>(0),reaching 1200% in favorable cases, was found to be much stronger for the AM<missing VAR>2B2compounds and to decrease with temperature as well as when Ca is replaced bySr, or Rh is replaced by Ir.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[187.0, 1.8, '<', 3],[177.0, 0, '<', 3],[62.0, 1200, '%', 0]

Rh
###Linear magnetoresistivity in the ternary AM2B2 and A3Rh8B6 phases (A = Ca, Sr; M = Rh, Ir)|Hiroyuki Takeya,Mohammed ElMassalami###
(61568, 61568)
 Such DeltarhoT<missing VAR>(H)/rhoT<missing VAR>(0),reaching 1200% in favorable cases, was found to be much stronger for the AM<missing VAR>2B2compounds and to decrease with temperature as well as when Ca is replaced bySr, or Rh is replaced by Ir.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[192.0, 1.8, '<', 3],[182.0, 0, '<', 3],[67.0, 1200, '%', 0]

Ir
###Linear magnetoresistivity in the ternary AM2B2 and A3Rh8B6 phases (A = Ca, Sr; M = Rh, Ir)|Hiroyuki Takeya,Mohammed ElMassalami###
(61576, 61576)
 Such DeltarhoT<missing VAR>(H)/rhoT<missing VAR>(0),reaching 1200% in favorable cases, was found to be much stronger for the AM<missing VAR>2B2compounds and to decrease with temperature as well as when Ca is replaced bySr, or Rh is replaced by Ir.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[200.0, 1.8, '<', 3],[190.0, 0, '<', 3],[75.0, 1200, '%', 0]

SrMnBi2
###Quantum transport of two-dimensional Dirac fermions in SrMnBi2|Kefeng Wang,D. Graf,Hechang Lei,S. W. Tozer,C. Petrovic###
(61655, 61658)
Quantum transport of two-dimensional Dirac fermions in SrMnBi2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[267.0, 2, 'D', 7],[325.0, 2, 'D', 7]

SrMnBi2
###Quantum transport of two-dimensional Dirac fermions in SrMnBi2|Kefeng Wang,D. Graf,Hechang Lei,S. W. Tozer,C. Petrovic###
(61675, 61678)
 We report two-dimensional quantum transport in SrMnBi2 single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[247.0, 2, 'D', 6],[305.0, 2, 'D', 6]

B
###Quantum transport of two-dimensional Dirac fermions in SrMnBi2|Kefeng Wang,D. Graf,Hechang Lei,S. W. Tozer,C. Petrovic###
(61758, 61758)
 The transverse magnetoresistance exhibits a crossover at acritical field B from semiclassical weak-field B2 dependence to thehigh-field linear-field dependence.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 2, 'D', 4],[225.0, 2, 'D', 4]

B2
###Quantum transport of two-dimensional Dirac fermions in SrMnBi2|Kefeng Wang,D. Graf,Hechang Lei,S. W. Tozer,C. Petrovic###
(61768, 61769)
 The transverse magnetoresistance exhibits a crossover at acritical field B from semiclassical weak-field B2 dependence to thehigh-field linear-field dependence.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 2, 'D', 4],[214.0, 2, 'D', 4]

B
###Quantum transport of two-dimensional Dirac fermions in SrMnBi2|Kefeng Wang,D. Graf,Hechang Lei,S. W. Tozer,C. Petrovic###
(61807, 61807)
 With increase in the temperature, thecritical field B increases and the temperature dependence of Bsatisfies quadratic behavior which is attributed to the Landau level splittingof the linear energy dispersion.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 2, 'D', 3],[176.0, 2, 'D', 3]

B
###Quantum transport of two-dimensional Dirac fermions in SrMnBi2|Kefeng Wang,D. Graf,Hechang Lei,S. W. Tozer,C. Petrovic###
(61821, 61821)
 With increase in the temperature, thecritical field B increases and the temperature dependence of Bsatisfies quadratic behavior which is attributed to the Landau level splittingof the linear energy dispersion.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 2, 'D', 3],[162.0, 2, 'D', 3]

SrMnBi2
###Quantum transport of two-dimensional Dirac fermions in SrMnBi2|Kefeng Wang,D. Graf,Hechang Lei,S. W. Tozer,C. Petrovic###
(61935, 61938)
Our results illustrate the dominant 2D Dirac fermion states in SrMnBi2 andimply that bulk crystals with Bi square nets can be used to study lowdimensional electronic transport commonly found in 2D materials like graphene.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 2, 'D', 0],[45.0, 2, 'D', 0]

Bi
###Quantum transport of two-dimensional Dirac fermions in SrMnBi2|Kefeng Wang,D. Graf,Hechang Lei,S. W. Tozer,C. Petrovic###
(61953, 61953)
Our results illustrate the dominant 2D Dirac fermion states in SrMnBi2 andimply that bulk crystals with Bi square nets can be used to study lowdimensional electronic transport commonly found in 2D materials like graphene.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 2, 'D', 0],[30.0, 2, 'D', 0]

Fe/Cr
###Anomalous Magnetoresistance in Fibonacci Multilayers|L. D. Machado,C. G. Bezerra,M. A. Correa,C. Chesman,J. E. Pearson,A. Hoffmann###
(62108, 62110)
 Using parameters for Fe/Cr multilayers, four terms wereincluded in our description of the magnetic energy Zeeman, cubic anisotropy,bilinear and biquadratic couplings.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

V
###Negative Magnetoresistance and Spin Filtering of Spin-Coupled Diiron-Oxo Clusters|Rui-Ning Wang,Jorge H. Rodriguez,Wu-Ming Liu###
(62832, 62832)
 Applied biases lower than 0.3V, in conjunction with sulfur anchoring, induce a negative magnetoresistancedue to lowering of the anchor-scatterer tunneling barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 6000, '%', 1]

In
###Negative Magnetoresistance and Spin Filtering of Spin-Coupled Diiron-Oxo Clusters|Rui-Ning Wang,Jorge H. Rodriguez,Wu-Ming Liu###
(62874, 62874)
 In addition, thediiron-oxo cluster displays nearly perfect spin filtering for parallelalignment of the iron magnetic moments due to energetic proximity, relative tothe Fermi level, of its highest occupied molecular orbitals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 6000, '%', 2]

O/S
###Giant negative magnetoresistance driven by spin-orbit coupling at the LAO/STO interface|M. Diez,A. M. R. V. L. Monteiro,G. Mattoni,E. Cobanera,T. Hyart,E. Mulazimoglu,N. Bovenzi,C. W. J. Beenakker,A. D. Caviglia###
(62979, 62981)
Giant negative magnetoresistance driven by spin-orbit coupling at the L<missing VAR>AO/ST<missing VAR>O interface.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[84.0, 70, '%', 2]

O
###Giant negative magnetoresistance driven by spin-orbit coupling at the LAO/STO interface|M. Diez,A. M. R. V. L. Monteiro,G. Mattoni,E. Cobanera,T. Hyart,E. Mulazimoglu,N. Bovenzi,C. W. J. Beenakker,A. D. Caviglia###
(62983, 62983)
Giant negative magnetoresistance driven by spin-orbit coupling at the L<missing VAR>AO/ST<missing VAR>O interface.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 70, '%', 2]

O/S
###Giant negative magnetoresistance driven by spin-orbit coupling at the LAO/STO interface|M. Diez,A. M. R. V. L. Monteiro,G. Mattoni,E. Cobanera,T. Hyart,E. Mulazimoglu,N. Bovenzi,C. W. J. Beenakker,A. D. Caviglia###
(62992, 62994)
 The L<missing VAR>AO/ST<missing VAR>O interface hosts a two-dimensional electron system that isunusually sensitive to the application of an in-plane magnetic field.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[71.0, 70, '%', 1]

O
###Giant negative magnetoresistance driven by spin-orbit coupling at the LAO/STO interface|M. Diez,A. M. R. V. L. Monteiro,G. Mattoni,E. Cobanera,T. Hyart,E. Mulazimoglu,N. Bovenzi,C. W. J. Beenakker,A. D. Caviglia###
(62996, 62996)
 The L<missing VAR>AO/ST<missing VAR>O interface hosts a two-dimensional electron system that isunusually sensitive to the application of an in-plane magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 70, '%', 1]

K
###Giant negative magnetoresistance driven by spin-orbit coupling at the LAO/STO interface|M. Diez,A. M. R. V. L. Monteiro,G. Mattoni,E. Cobanera,T. Hyart,E. Mulazimoglu,N. Bovenzi,C. W. J. Beenakker,A. D. Caviglia###
(63150, 63150)
 Here we report on experiments over a broad temperature range,showing the persistence of the magnetoresistance up to the 20K range ---indicative of a single-particle mechanism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 70, '%', 1]

WTe2
###Drastic pressure effect on the extremely large magnetoresistance in WTe2: quantum oscillation study|P. L. Cai,J. Hu,L. P. He,J. Pan,X. C. Hong,Z. Zhang,J. Zhang,J. Wei,Z. Q. Mao,S. Y. Li###
(63333, 63335)
Drastic pressure effect on the extremely large magnetoresistance in WTe2 quantum oscillation study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 0.3, 'K', 4],[177.0, 5, '%', 4],[194.0, 3, '%', 4],[198.0, 23.6, 'kbar', 4]

WTe2
###Drastic pressure effect on the extremely large magnetoresistance in WTe2: quantum oscillation study|P. L. Cai,J. Hu,L. P. He,J. Pan,X. C. Hong,Z. Zhang,J. Zhang,J. Wei,Z. Q. Mao,S. Y. Li###
(63375, 63377)
 The quantum oscillations of the magnetoresistance under ambient and highpressure have been studied for WTe2 single crystals, in which extremelylarge magnetoresistance was discovered recently.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 0.3, 'K', 3],[135.0, 5, '%', 3],[152.0, 3, '%', 3],[156.0, 23.6, 'kbar', 3]

At
###Drastic pressure effect on the extremely large magnetoresistance in WTe2: quantum oscillation study|P. L. Cai,J. Hu,L. P. He,J. Pan,X. C. Hong,Z. Zhang,J. Zhang,J. Wei,Z. Q. Mao,S. Y. Li###
(63484, 63484)
 At 0.3 K and in 14.5T<missing VAR>, the magnetoresistance decreases drastically from 1.25 times 105%under ambient pressure to 7.47 times 103% under 23.6 kbar, which islikely caused by the relative change of Fermi surfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[1.0, 0.3, 'K', 0],[28.0, 5, '%', 0],[45.0, 3, '%', 0],[49.0, 23.6, 'kbar', 0]

WTe2
###Drastic pressure effect on the extremely large magnetoresistance in WTe2: quantum oscillation study|P. L. Cai,J. Hu,L. P. He,J. Pan,X. C. Hong,Z. Zhang,J. Zhang,J. Wei,Z. Q. Mao,S. Y. Li###
(63610, 63612)
 These results supportthe scenario that the perfect balance between the electron and hole populationsis the origin of the extremely large magnetoresistance in WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 0.3, 'K', 1],[98.0, 5, '%', 1],[81.0, 3, '%', 1],[77.0, 23.6, 'kbar', 1]

In
###Fourier transform analysis of irradiated Weiss oscillations|Jesús Iñarrea,Gloria Platero###
(63683, 63683)
  In our proposal the magnetoresistance of a unidirectional spatial periodicpotential (superlattice), is modulated by microwave radiation due to aninterference effect between both, space and time-dependent potentials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FF
###Fourier transform analysis of irradiated Weiss oscillations|Jesús Iñarrea,Gloria Platero###
(63938, 63939)
 % We firststudy the FFT<missing VAR> of the system for each potential individually.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FF
###Fourier transform analysis of irradiated Weiss oscillations|Jesús Iñarrea,Gloria Platero###
(63968, 63969)
 Then we studyjointly the FFT<missing VAR> of the system when the two types of potentials aresimultaneously acting.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ta4Pd3Te16
###Quasi-linear magnetoresistance and the violation of Kohler's rule in the quasi-one-dimensional Ta$_4$Pd$_3$Te$_{16}$ superconductor|Xiaofeng Xu,W. H. Jiao,N. Zhou,Y. Guo,Y. K. Li,Jianhui Dai,Z. Q. Lin,Y. J. Liu,Zengwei Zhu,Xin Lu,H. Q. Yuan,Guanghan Cao###
(64035, 64040)
Quasi-linear magnetoresistance and the violation of Kohlers<missing VAR> rule in the quasi-one-dimensional Ta4Pd3Te16 superconductor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13043478260869565,0,0,0,0,0,0.6956521739130435,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.17391304347826086,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 1, 'over', 2],[146.0, 50, 'tesla', 3]

Ta4Pd3Te16
###Quasi-linear magnetoresistance and the violation of Kohler's rule in the quasi-one-dimensional Ta$_4$Pd$_3$Te$_{16}$ superconductor|Xiaofeng Xu,W. H. Jiao,N. Zhou,Y. Guo,Y. K. Li,Jianhui Dai,Z. Q. Lin,Y. J. Liu,Zengwei Zhu,Xin Lu,H. Q. Yuan,Guanghan Cao###
(64086, 64091)
 We report on the quasi-linear in field intrachain magnetoresistance in thenormal state of a quasi-one-dimensional superconductor Ta4Pd3Te16(Tcsim4.6 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13043478260869565,0,0,0,0,0,0.6956521739130435,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.17391304347826086,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 1, 'over', 1],[95.0, 50, 'tesla', 2]

K
###Quasi-linear magnetoresistance and the violation of Kohler's rule in the quasi-one-dimensional Ta$_4$Pd$_3$Te$_{16}$ superconductor|Xiaofeng Xu,W. H. Jiao,N. Zhou,Y. Guo,Y. K. Li,Jianhui Dai,Z. Q. Lin,Y. J. Liu,Zengwei Zhu,Xin Lu,H. Q. Yuan,Guanghan Cao###
(64100, 64100)
 We report on the quasi-linear in field intrachain magnetoresistance in thenormal state of a quasi-one-dimensional superconductor Ta4Pd3Te16(Tcsim4.6 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 1, 'over', 1],[86.0, 50, 'tesla', 2]

B
###Quasi-linear magnetoresistance and the violation of Kohler's rule in the quasi-one-dimensional Ta$_4$Pd$_3$Te$_{16}$ superconductor|Xiaofeng Xu,W. H. Jiao,N. Zhou,Y. Guo,Y. K. Li,Jianhui Dai,Z. Q. Lin,Y. J. Liu,Zengwei Zhu,Xin Lu,H. Q. Yuan,Guanghan Cao###
(64137, 64137)
 Both the longitudinal and transverse in-chainmagnetoresistance shows a power-law dependence, DeltarhoproptoBalpha, with the exponent alpha close to 1 over a widetemperature and field range.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 1, 'over', 0],[49.0, 50, 'tesla', 1]

Ta4Pd3Te16
###Quasi-linear magnetoresistance and the violation of Kohler's rule in the quasi-one-dimensional Ta$_4$Pd$_3$Te$_{16}$ superconductor|Xiaofeng Xu,W. H. Jiao,N. Zhou,Y. Guo,Y. K. Li,Jianhui Dai,Z. Q. Lin,Y. J. Liu,Zengwei Zhu,Xin Lu,H. Q. Yuan,Guanghan Cao###
(64202, 64207)
 The linear magnetoresistance observed inTa4Pd3Te16 is found to be overall inconsistent with theinterpretations based on the Dirac fermions in the quantum limit, chargeconductivity fluctuations as well as quantum electron-electron interference.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13043478260869565,0,0,0,0,0,0.6956521739130435,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.17391304347826086,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 1, 'over', 2],[16.0, 50, 'tesla', 1]

Pt/YI
###Effect of Quantum Tunneling on Spin Hall Magnetoresistance|Seulgi Ok,Wei Chen,Manfred Sigrist,Dirk Manske###
(64452, 64455)
 We present a formalism that simultaneously incorporates the effect of quantumtunneling and spin diffusion on spin Hall magnetoresistance observed in normalmetal/ferromagnetic insulator bilayers (such as Pt/YIG) and normalmetal/ferromagnetic metal bilayers (such as Pt/Co), in which the angle ofmagnetization influences the magnetoresistance of the normal metal.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Co
###Effect of Quantum Tunneling on Spin Hall Magnetoresistance|Seulgi Ok,Wei Chen,Manfred Sigrist,Dirk Manske###
(64479, 64479)
 We present a formalism that simultaneously incorporates the effect of quantumtunneling and spin diffusion on spin Hall magnetoresistance observed in normalmetal/ferromagnetic insulator bilayers (such as Pt/YIG) and normalmetal/ferromagnetic metal bilayers (such as Pt/Co), in which the angle ofmagnetization influences the magnetoresistance of the normal metal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Effect of Quantum Tunneling on Spin Hall Magnetoresistance|Seulgi Ok,Wei Chen,Manfred Sigrist,Dirk Manske###
(64511, 64511)
 In thenormal metal side the spin diffusion is known to affect the landscape of thespin accumulation caused by spin Hall effect and subsequently themagnetoresistance, while on the ferromagnet side the quantum tunneling effectis detrimental to the interface spin current which also affects the spinaccumulation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TaAs2
###Hidden Weyl Points in Centrosymmetric Paramagnetic Metals|Dominik Gresch,QuanSheng Wu,Georg W. Winkler,Alexey A. Soluyanov###
(64729, 64731)
 The transition metal dipnictides TaAs2 , TaSb2 , NbAs2 and NbSb2 haverecently sparked interest for exhibiting giant magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TaSb2
###Hidden Weyl Points in Centrosymmetric Paramagnetic Metals|Dominik Gresch,QuanSheng Wu,Georg W. Winkler,Alexey A. Soluyanov###
(64735, 64737)
 The transition metal dipnictides TaAs2 , TaSb2 , NbAs2 and NbSb2 haverecently sparked interest for exhibiting giant magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbAs2
###Hidden Weyl Points in Centrosymmetric Paramagnetic Metals|Dominik Gresch,QuanSheng Wu,Georg W. Winkler,Alexey A. Soluyanov###
(64741, 64743)
 The transition metal dipnictides TaAs2 , TaSb2 , NbAs2 and NbSb2 haverecently sparked interest for exhibiting giant magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbSb2
###Hidden Weyl Points in Centrosymmetric Paramagnetic Metals|Dominik Gresch,QuanSheng Wu,Georg W. Winkler,Alexey A. Soluyanov###
(64747, 64749)
 The transition metal dipnictides TaAs2 , TaSb2 , NbAs2 and NbSb2 haverecently sparked interest for exhibiting giant magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Hidden Weyl Points in Centrosymmetric Paramagnetic Metals|Dominik Gresch,QuanSheng Wu,Georg W. Winkler,Alexey A. Soluyanov###
(64860, 64860)
 In the absence ofmagnetic field, we find that the materials are weak topological insulators,which is in agreement with previous studies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Hidden Weyl Points in Centrosymmetric Paramagnetic Metals|Dominik Gresch,QuanSheng Wu,Georg W. Winkler,Alexey A. Soluyanov###
(64931, 64932)
 When the magnetic field isapplied, we find that type-II Weyl points form.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TaAs2
###Hidden Weyl Points in Centrosymmetric Paramagnetic Metals|Dominik Gresch,QuanSheng Wu,Georg W. Winkler,Alexey A. Soluyanov###
(64979, 64981)
 This result is found first froma symmetry argument, and then numerically for a k.p model of TaAs2 and atight-binding model of NbSb2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbSb2
###Hidden Weyl Points in Centrosymmetric Paramagnetic Metals|Dominik Gresch,QuanSheng Wu,Georg W. Winkler,Alexey A. Soluyanov###
(64996, 64998)
 This result is found first froma symmetry argument, and then numerically for a k.p model of TaAs2 and atight-binding model of NbSb2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Spin Hall magnetoresistance in antiferromagnet/heavy-metal heterostructures|Johanna Fischer,Olena Gomonay,Richard Schlitz,Kathrin Ganzhorn,Nynke Vlietstra,Matthias Althammer,Hans Huebl,Matthias Opel,Rudolf Gross,Sebastian T. B. Goennenwein,Stephan Geprägs###
(65377, 65377)
 We investigate the spin Hall magnetoresistance in thin film bilayerheterostructures of the heavy metal Pt and the antiferromagnetic insulator NiO.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiO
###Spin Hall magnetoresistance in antiferromagnet/heavy-metal heterostructures|Johanna Fischer,Olena Gomonay,Richard Schlitz,Kathrin Ganzhorn,Nynke Vlietstra,Matthias Althammer,Hans Huebl,Matthias Opel,Rudolf Gross,Sebastian T. B. Goennenwein,Stephan Geprägs###
(65387, 65388)
 We investigate the spin Hall magnetoresistance in thin film bilayerheterostructures of the heavy metal Pt and the antiferromagnetic insulator NiO.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiO
###Spin Hall magnetoresistance in antiferromagnet/heavy-metal heterostructures|Johanna Fischer,Olena Gomonay,Richard Schlitz,Kathrin Ganzhorn,Nynke Vlietstra,Matthias Althammer,Hans Huebl,Matthias Opel,Rudolf Gross,Sebastian T. B. Goennenwein,Stephan Geprägs###
(65414, 65415)
While rotating an external magnetic field in the easy plane of NiO, we recordthe longitudinal and the transverse resistivity of the Pt layer and observe anamplitude modulation consistent with the spin Hall magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Spin Hall magnetoresistance in antiferromagnet/heavy-metal heterostructures|Johanna Fischer,Olena Gomonay,Richard Schlitz,Kathrin Ganzhorn,Nynke Vlietstra,Matthias Althammer,Hans Huebl,Matthias Opel,Rudolf Gross,Sebastian T. B. Goennenwein,Stephan Geprägs###
(65439, 65439)
While rotating an external magnetic field in the easy plane of NiO, we recordthe longitudinal and the transverse resistivity of the Pt layer and observe anamplitude modulation consistent with the spin Hall magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin Hall magnetoresistance in antiferromagnet/heavy-metal heterostructures|Johanna Fischer,Olena Gomonay,Richard Schlitz,Kathrin Ganzhorn,Nynke Vlietstra,Matthias Althammer,Hans Huebl,Matthias Opel,Rudolf Gross,Sebastian T. B. Goennenwein,Stephan Geprägs###
(65467, 65467)
 Incomparison to Pt on collinear ferrimagnets, the modulation is phase shifted by90deg and its amplitude strongly increases with the magnitude of themagnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Spin Hall magnetoresistance in antiferromagnet/heavy-metal heterostructures|Johanna Fischer,Olena Gomonay,Richard Schlitz,Kathrin Ganzhorn,Nynke Vlietstra,Matthias Althammer,Hans Huebl,Matthias Opel,Rudolf Gross,Sebastian T. B. Goennenwein,Stephan Geprägs###
(65474, 65474)
 Incomparison to Pt on collinear ferrimagnets, the modulation is phase shifted by90deg and its amplitude strongly increases with the magnitude of themagnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HoRhGe
###Change in the order of magnetic transition in HoRhGe as probed by magnetoresistance and magnetocaloric studies|Sachin B. Gupta,K. G. Suresh,A. K. Nigam###
(65712, 65714)
Change in the order of magnetic transition in HoRhGe as probed by magnetoresistance and magnetocaloric studies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 5.5, 'K', 2],[82.0, 2, 'K', 2],[99.0, 25, '%', 3],[116.0, 50, 'kOe', 3],[123.0, 2, 'K', 4],[159.0, 12, '%', 4],[297.0, 50, 'kOe', 7]

HoRhGe
###Change in the order of magnetic transition in HoRhGe as probed by magnetoresistance and magnetocaloric studies|Sachin B. Gupta,K. G. Suresh,A. K. Nigam###
(65743, 65745)
 Magnetoresistance and magnetocaloric properties of polycrystalline HoRhGehave been studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 5.5, 'K', 1],[51.0, 2, 'K', 1],[68.0, 25, '%', 2],[85.0, 50, 'kOe', 2],[92.0, 2, 'K', 3],[128.0, 12, '%', 3],[266.0, 50, 'kOe', 6]

N
###Change in the order of magnetic transition in HoRhGe as probed by magnetoresistance and magnetocaloric studies|Sachin B. Gupta,K. G. Suresh,A. K. Nigam###
(65774, 65774)
 This compound orders antiferromagnetically with a Neeltemperature (T<missing VAR>N) of 5.5 K and undergoes a first order metamagnetic transitionat 2 K.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 5.5, 'K', 0],[22.0, 2, 'K', 0],[39.0, 25, '%', 1],[56.0, 50, 'kOe', 1],[63.0, 2, 'K', 2],[99.0, 12, '%', 2],[237.0, 50, 'kOe', 5]

N
###Change in the order of magnetic transition in HoRhGe as probed by magnetoresistance and magnetocaloric studies|Sachin B. Gupta,K. G. Suresh,A. K. Nigam###
(65819, 65819)
 It shows a large negative magnetoresistance of 25% at T<missing VAR>N, for a fieldof 50 kOe.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 5.5, 'K', 1],[23.0, 2, 'K', 1],[6.0, 25, '%', 0],[11.0, 50, 'kOe', 0],[18.0, 2, 'K', 1],[54.0, 12, '%', 1],[192.0, 50, 'kOe', 4]

S
###Change in the order of magnetic transition in HoRhGe as probed by magnetoresistance and magnetocaloric studies|Sachin B. Gupta,K. G. Suresh,A. K. Nigam###
(65981, 65981)
 The value of magnetic entropy change (-DeltaSM) is found to be11.1 J<missing VAR>/kg K for a field change of 50 kOe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[203.0, 5.5, 'K', 5],[185.0, 2, 'K', 5],[168.0, 25, '%', 4],[151.0, 50, 'kOe', 4],[144.0, 2, 'K', 3],[108.0, 12, '%', 3],[30.0, 50, 'kOe', 0]

K
###Change in the order of magnetic transition in HoRhGe as probed by magnetoresistance and magnetocaloric studies|Sachin B. Gupta,K. G. Suresh,A. K. Nigam###
(66000, 66000)
 The value of magnetic entropy change (-DeltaSM) is found to be11.1 J<missing VAR>/kg K for a field change of 50 kOe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[222.0, 5.5, 'K', 5],[204.0, 2, 'K', 5],[187.0, 25, '%', 4],[170.0, 50, 'kOe', 4],[163.0, 2, 'K', 3],[127.0, 12, '%', 3],[11.0, 50, 'kOe', 0]

B
###Aharonov-Bohm effect and giant magnetoresistance in graphene nanoribbon rings|Viet-Hung Nguyen,Yann-Michel Niquet,Philippe Dollfus###
(66108, 66108)
 We report a numerical study on Aharonov-Bohm (AB) effect and giantmagnetoresistance in rectangular rings made of graphene nanoribbons (G<missing VAR>NRs).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Aharonov-Bohm effect and giant magnetoresistance in graphene nanoribbon rings|Viet-Hung Nguyen,Yann-Michel Niquet,Philippe Dollfus###
(66136, 66136)
 We report a numerical study on Aharonov-Bohm (AB) effect and giantmagnetoresistance in rectangular rings made of graphene nanoribbons (G<missing VAR>NRs).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Aharonov-Bohm effect and giant magnetoresistance in graphene nanoribbon rings|Viet-Hung Nguyen,Yann-Michel Niquet,Philippe Dollfus###
(66171, 66171)
 Weshow that in low energy regime where only the first subband of contact G<missing VAR>NRscontributes to the transport, the transmission probability can be stronglymodulated, i.e.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Aharonov-Bohm effect and giant magnetoresistance in graphene nanoribbon rings|Viet-Hung Nguyen,Yann-Michel Niquet,Philippe Dollfus###
(66237, 66237)
 On this basis, strong AB oscillations with giant negativemagnetoresistance can be achieved at room temperature.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Aharonov-Bohm effect and giant magnetoresistance in graphene nanoribbon rings|Viet-Hung Nguyen,Yann-Michel Niquet,Philippe Dollfus###
(66302, 66302)
 The magnetoresistancereaches thousands % in perfect GNR rings and a few hundred % with edgedisordered G<missing VAR>NRs.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Aharonov-Bohm effect and giant magnetoresistance in graphene nanoribbon rings|Viet-Hung Nguyen,Yann-Michel Niquet,Philippe Dollfus###
(66352, 66352)
 Our study hence provides guidelines for further investigations ofthe AB interference and to obtain high magnetoresistance in graphene devices.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbSe2
###Vortex crossing, trapping and pinning in superconducting nanowires of a NbSe$_2$ two-dimensional crystal|Shaun A. Mills,Jacob J. Wisser,Chenyi Shen,Zhuan Xu,Ying Liu###
(66402, 66404)
Vortex crossing, trapping and pinning in superconducting nanowires of a NbSe2 two-dimensional crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[192.0, 1, ',', 4],[310.0, 2, 'D', 5]

II
###Vortex crossing, trapping and pinning in superconducting nanowires of a NbSe$_2$ two-dimensional crystal|Shaun A. Mills,Jacob J. Wisser,Chenyi Shen,Zhuan Xu,Ying Liu###
(66432, 66433)
 Nanowires of two-dimensional (2D) crystals of type-II superconductor NbSe2prepared by electron-beam lithography were studied, focusing on the effect ofthe motion of Abrikosov vortices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 1, ',', 3],[281.0, 2, 'D', 4]

NbSe2
###Vortex crossing, trapping and pinning in superconducting nanowires of a NbSe$_2$ two-dimensional crystal|Shaun A. Mills,Jacob J. Wisser,Chenyi Shen,Zhuan Xu,Ying Liu###
(66437, 66439)
 Nanowires of two-dimensional (2D) crystals of type-II superconductor NbSe2prepared by electron-beam lithography were studied, focusing on the effect ofthe motion of Abrikosov vortices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 1, ',', 3],[275.0, 2, 'D', 4]

H
###Vortex crossing, trapping and pinning in superconducting nanowires of a NbSe$_2$ two-dimensional crystal|Shaun A. Mills,Jacob J. Wisser,Chenyi Shen,Zhuan Xu,Ying Liu###
(66594, 66594)
 Above thelower critical field, Hc<missing VAR>1, the crossing rate is also influenced byvortices trapped by sample boundaries or pinning centers, leading tosample-specific magnetoresistance patterns.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 1, ',', 0],[120.0, 2, 'D', 1]

CrO2
###Features of Low Temperature Tunnel Magnetoresistance in Pressed Powder of Chromium Dioxide|V. A. Horielyi,N. V. Dalakova,E. Yu. Beliayev###
(66786, 66788)
 Resistive and magnetoresistive properties of two samples of compacted powdersof ferromagnetic half-metal CrO2 with shape anisotropy of nanoparticles werestudied.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 300, 'nm', 1]

CrO2
###Features of Low Temperature Tunnel Magnetoresistance in Pressed Powder of Chromium Dioxide|V. A. Horielyi,N. V. Dalakova,E. Yu. Beliayev###
(66887, 66889)
 One of the samples has been made of compacted powder of pureCrO2, while another sample has been prepared from a substitution solidsolution Cr1-xFex<missing VAR>O2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 300, 'nm', 1]

Cr1-xFe
###Features of Low Temperature Tunnel Magnetoresistance in Pressed Powder of Chromium Dioxide|V. A. Horielyi,N. V. Dalakova,E. Yu. Beliayev###
(66915, 66919)
 One of the samples has been made of compacted powder of pureCrO2, while another sample has been prepared from a substitution solidsolution Cr1-xFex<missing VAR>O2.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[56.0, 300, 'nm', 1]

O2
###Features of Low Temperature Tunnel Magnetoresistance in Pressed Powder of Chromium Dioxide|V. A. Horielyi,N. V. Dalakova,E. Yu. Beliayev###
(66921, 66922)
 One of the samples has been made of compacted powder of pureCrO2, while another sample has been prepared from a substitution solidsolution Cr1-xFex<missing VAR>O2.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 300, 'nm', 1]

Fe
###Features of Low Temperature Tunnel Magnetoresistance in Pressed Powder of Chromium Dioxide|V. A. Horielyi,N. V. Dalakova,E. Yu. Beliayev###
(66948, 66948)
 The aim of this work was to study the effect ofFe impurity on the value of tunnel resistance and tunnel magnetoresistance forcompacted CrO2 powders.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 300, 'nm', 2]

CrO2
###Features of Low Temperature Tunnel Magnetoresistance in Pressed Powder of Chromium Dioxide|V. A. Horielyi,N. V. Dalakova,E. Yu. Beliayev###
(66975, 66977)
 The aim of this work was to study the effect ofFe impurity on the value of tunnel resistance and tunnel magnetoresistance forcompacted CrO2 powders.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 300, 'nm', 2]

Fe
###Features of Low Temperature Tunnel Magnetoresistance in Pressed Powder of Chromium Dioxide|V. A. Horielyi,N. V. Dalakova,E. Yu. Beliayev###
(66996, 66996)
 It was found that the addition of Fe impurity leadsto an increase in the coercive force of the powder and reduce the tunnelmagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 300, 'nm', 3]

Fe
###Features of Low Temperature Tunnel Magnetoresistance in Pressed Powder of Chromium Dioxide|V. A. Horielyi,N. V. Dalakova,E. Yu. Beliayev###
(67049, 67049)
 We assume resonant tunneling mechanism on the Fe impurities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[190.0, 300, 'nm', 4]

SmB6
###Magnetoresistance evidence on surface state and field-dependent bulk gap in Kondo insulator SmB6|F. Chen,C. Shang,Z. Jin,D. Zhao,Y. P. Wu,Z. J. Xiang,Z. C. Xia,A. F. Wang,X. G. Luo,T. Wu,X. H. Chen###
(67147, 67149)
Magnetoresistance evidence on surface state and field-dependent bulk gap in Kondo insulator SmB6.
Featurization terminated normally.
0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 55, 'Tesla', 2],[122.0, 5, 'K', 3],[171.0, 5, 'K', 4],[226.0, 196, 'T', 5]

SmB6
###Magnetoresistance evidence on surface state and field-dependent bulk gap in Kondo insulator SmB6|F. Chen,C. Shang,Z. Jin,D. Zhao,Y. P. Wu,Z. J. Xiang,Z. C. Xia,A. F. Wang,X. G. Luo,T. Wu,X. H. Chen###
(67174, 67176)
 Recently, the resistance saturation at low temperature in Kondo insulatorSmB6, a long-standing puzzle in condensed matter physics, was proposed tooriginate from topological surface state.
Featurization terminated normally.
0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 55, 'Tesla', 1],[95.0, 5, 'K', 2],[144.0, 5, 'K', 3],[199.0, 196, 'T', 4]

SmB6
###Magnetoresistance evidence on surface state and field-dependent bulk gap in Kondo insulator SmB6|F. Chen,C. Shang,Z. Jin,D. Zhao,Y. P. Wu,Z. J. Xiang,Z. C. Xia,A. F. Wang,X. G. Luo,T. Wu,X. H. Chen###
(67229, 67231)
 Here,we systematically studied themagnetoresistance of SmB6 at low temperature up to 55 Tesla.
Featurization terminated normally.
0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 55, 'Tesla', 0],[40.0, 5, 'K', 1],[89.0, 5, 'K', 2],[144.0, 196, 'T', 3]

SmB6
###Magnetoresistance evidence on surface state and field-dependent bulk gap in Kondo insulator SmB6|F. Chen,C. Shang,Z. Jin,D. Zhao,Y. P. Wu,Z. J. Xiang,Z. C. Xia,A. F. Wang,X. G. Luo,T. Wu,X. H. Chen###
(67430, 67432)
 Our results give a consistentpicture to understand the low-temperature transport behavior in SmB6,consistent with topological Kondo insulator scenario.
Featurization terminated normally.
0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 55, 'Tesla', 4],[159.0, 5, 'K', 3],[110.0, 5, 'K', 2],[55.0, 196, 'T', 1]

C
###Linear magnetoresistance in metals: guiding center diffusion in a smooth random potential|Justin C. W. Song,Gil Refael,Patrick A. Lee###
(67494, 67494)
 We predict that guiding center (G<missing VAR>C) diffusion yields a linear andnon-saturating (transverse) magnetoresistance in 3D metals.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 3, 'D', 0]

B
###Linear magnetoresistance in metals: guiding center diffusion in a smooth random potential|Justin C. W. Song,Gil Refael,Patrick A. Lee###
(67631, 67631)
 Underthese conditions, orbits with small momenta along magnetic field B aresqueezed and dominate the transverse conductivity.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 3, 'D', 2]

C
###Linear magnetoresistance in metals: guiding center diffusion in a smooth random potential|Justin C. W. Song,Gil Refael,Patrick A. Lee###
(67707, 67707)
 We argue that magnetoresistance fromG<missing VAR>C diffusion explains the recently observed giant linear magnetoresistance in3D<missing VAR> Dirac materials.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 3, 'D', 4]

WTe2
###Magnetoresistance and Quantum Oscillations of an Electrostatically Tuned Semimetal-to-Metal Transition in Ultra-Thin WTe2|Valla Fatemi,Quinn D. Gibson,Kenji Watanabe,Takashi Taniguchi,Robert J. Cava,Pablo Jarillo-Herrero###
(67774, 67776)
Magnetoresistance and Quantum Oscillations of an Electrostatically Tuned Semimetal-to-Metal Transition in Ultra-Thin WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 2, 'D', 2]

WTe
###Magnetoresistance and Quantum Oscillations of an Electrostatically Tuned Semimetal-to-Metal Transition in Ultra-Thin WTe2|Valla Fatemi,Quinn D. Gibson,Kenji Watanabe,Takashi Taniguchi,Robert J. Cava,Pablo Jarillo-Herrero###
(67808, 67809)
 We report on electronic transport measurements of electrostatically gatednano-devices of the semimetal WTetextsubscript2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 2, 'D', 1]

At
###Magnetoresistance and Quantum Oscillations of an Electrostatically Tuned Semimetal-to-Metal Transition in Ultra-Thin WTe2|Valla Fatemi,Quinn D. Gibson,Kenji Watanabe,Takashi Taniguchi,Robert J. Cava,Pablo Jarillo-Herrero###
(67852, 67852)
 At low temperatures, we find that a large magnetoresistance can beturned on and off by electrostatically doping the system between a semimetallicstate and an electron-only metallic state, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 2, 'D', 1]

WTe2
###The study on quantum material WTe2|Xing-Chen Pan,Xuefeng Wang,Fengqi Song,Baigeng Wang###
(68120, 68122)
The study on quantum material WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###The study on quantum material WTe2|Xing-Chen Pan,Xuefeng Wang,Fengqi Song,Baigeng Wang###
(68125, 68127)
 WTe2 and its sister alloys have attracted tremendous attentions recent yearsdue to the large non-saturating magnetoresistance and topological non-trivialproperties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PrV2Al20
###Giant Anisotropic Magnetoresistance due to Purely Orbital Rearrangement in the Quadrupolar Heavy Fermion Superconductor PrV$_2$Al$_{20}$|Yasuyuki Shimura,Qiu Zhang,Bin Zeng,Daniel Rhodes,Rico Uwe Schonemann,Masaki Tsujimoto,Yosuke Matsumoto,Akito Sakai,Toshiro Sakakibara,Koji Araki,Wenkai Zheng,Qiong Zhou,Luis Balicas,Satoru Nakatsuji###
(68241, 68245)
Giant Anisotropic Magnetoresistance due to Purely Orbital Rearrangement in the Quadrupolar Heavy Fermion Superconductor PrV2Al20.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.8695652173913043,0,0,0,0,0,0,0,0,0,0.08695652173913043,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.043478260869565216,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 31.4, 'T', 2],[120.0, 0.7, 'K', 2],[152.0, 12, 'T', 3],[173.0, 12, 'T', 3]

In
###Giant Anisotropic Magnetoresistance due to Purely Orbital Rearrangement in the Quadrupolar Heavy Fermion Superconductor PrV$_2$Al$_{20}$|Yasuyuki Shimura,Qiu Zhang,Bin Zeng,Daniel Rhodes,Rico Uwe Schonemann,Masaki Tsujimoto,Yosuke Matsumoto,Akito Sakai,Toshiro Sakakibara,Koji Araki,Wenkai Zheng,Qiong Zhou,Luis Balicas,Satoru Nakatsuji###
(68290, 68290)
 In particular, wemeasured the magnetoresistance under fields up to 31.4 T in the cubic Pr-basedheavy fermion superconductor PrV2Al20 with a non-magnetic Gamma 3doublet ground state, exhibiting antiferro-quadrupole ordering below 0.7 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 31.4, 'T', 0],[75.0, 0.7, 'K', 0],[107.0, 12, 'T', 1],[128.0, 12, 'T', 1]

Pr
###Giant Anisotropic Magnetoresistance due to Purely Orbital Rearrangement in the Quadrupolar Heavy Fermion Superconductor PrV$_2$Al$_{20}$|Yasuyuki Shimura,Qiu Zhang,Bin Zeng,Daniel Rhodes,Rico Uwe Schonemann,Masaki Tsujimoto,Yosuke Matsumoto,Akito Sakai,Toshiro Sakakibara,Koji Araki,Wenkai Zheng,Qiong Zhou,Luis Balicas,Satoru Nakatsuji###
(68319, 68319)
 In particular, wemeasured the magnetoresistance under fields up to 31.4 T in the cubic Pr-basedheavy fermion superconductor PrV2Al20 with a non-magnetic Gamma 3doublet ground state, exhibiting antiferro-quadrupole ordering below 0.7 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 31.4, 'T', 0],[46.0, 0.7, 'K', 0],[78.0, 12, 'T', 1],[99.0, 12, 'T', 1]

PrV2Al20
###Giant Anisotropic Magnetoresistance due to Purely Orbital Rearrangement in the Quadrupolar Heavy Fermion Superconductor PrV$_2$Al$_{20}$|Yasuyuki Shimura,Qiu Zhang,Bin Zeng,Daniel Rhodes,Rico Uwe Schonemann,Masaki Tsujimoto,Yosuke Matsumoto,Akito Sakai,Toshiro Sakakibara,Koji Araki,Wenkai Zheng,Qiong Zhou,Luis Balicas,Satoru Nakatsuji###
(68330, 68334)
 In particular, wemeasured the magnetoresistance under fields up to 31.4 T in the cubic Pr-basedheavy fermion superconductor PrV2Al20 with a non-magnetic Gamma 3doublet ground state, exhibiting antiferro-quadrupole ordering below 0.7 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.8695652173913043,0,0,0,0,0,0,0,0,0,0.08695652173913043,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.043478260869565216,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 31.4, 'T', 0],[31.0, 0.7, 'K', 0],[63.0, 12, 'T', 1],[84.0, 12, 'T', 1]

Ga
###Giant and Linear Magnetoresistance in Liquid Metals at Ambient Temperature|Xiaolin Wang,Feixiang Xiang,David Cortie,Zengji Yue,Zhi Li,Zhidong Zhang,Lina Sang###
(69057, 69057)
 Here we reportnon-saturating magnetoresistance discovered in the liquid state of threemetals Ga, Ga-In-Sn and Bi-Pb-Sn-In alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 2500, '%', 1]

Ga
###Giant and Linear Magnetoresistance in Liquid Metals at Ambient Temperature|Xiaolin Wang,Feixiang Xiang,David Cortie,Zengji Yue,Zhi Li,Zhidong Zhang,Lina Sang###
(69060, 69060)
 Here we reportnon-saturating magnetoresistance discovered in the liquid state of threemetals Ga, Ga-In-Sn and Bi-Pb-Sn-In alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 2500, '%', 1]

In
###Giant and Linear Magnetoresistance in Liquid Metals at Ambient Temperature|Xiaolin Wang,Feixiang Xiang,David Cortie,Zengji Yue,Zhi Li,Zhidong Zhang,Lina Sang###
(69062, 69062)
 Here we reportnon-saturating magnetoresistance discovered in the liquid state of threemetals Ga, Ga-In-Sn and Bi-Pb-Sn-In alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 2500, '%', 1]

Sn
###Giant and Linear Magnetoresistance in Liquid Metals at Ambient Temperature|Xiaolin Wang,Feixiang Xiang,David Cortie,Zengji Yue,Zhi Li,Zhidong Zhang,Lina Sang###
(69064, 69064)
 Here we reportnon-saturating magnetoresistance discovered in the liquid state of threemetals Ga, Ga-In-Sn and Bi-Pb-Sn-In alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 2500, '%', 1]

Bi
###Giant and Linear Magnetoresistance in Liquid Metals at Ambient Temperature|Xiaolin Wang,Feixiang Xiang,David Cortie,Zengji Yue,Zhi Li,Zhidong Zhang,Lina Sang###
(69068, 69068)
 Here we reportnon-saturating magnetoresistance discovered in the liquid state of threemetals Ga, Ga-In-Sn and Bi-Pb-Sn-In alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 2500, '%', 1]

Pb
###Giant and Linear Magnetoresistance in Liquid Metals at Ambient Temperature|Xiaolin Wang,Feixiang Xiang,David Cortie,Zengji Yue,Zhi Li,Zhidong Zhang,Lina Sang###
(69070, 69070)
 Here we reportnon-saturating magnetoresistance discovered in the liquid state of threemetals Ga, Ga-In-Sn and Bi-Pb-Sn-In alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 2500, '%', 1]

Sn
###Giant and Linear Magnetoresistance in Liquid Metals at Ambient Temperature|Xiaolin Wang,Feixiang Xiang,David Cortie,Zengji Yue,Zhi Li,Zhidong Zhang,Lina Sang###
(69072, 69072)
 Here we reportnon-saturating magnetoresistance discovered in the liquid state of threemetals Ga, Ga-In-Sn and Bi-Pb-Sn-In alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 2500, '%', 1]

In
###Giant and Linear Magnetoresistance in Liquid Metals at Ambient Temperature|Xiaolin Wang,Feixiang Xiang,David Cortie,Zengji Yue,Zhi Li,Zhidong Zhang,Lina Sang###
(69074, 69074)
 Here we reportnon-saturating magnetoresistance discovered in the liquid state of threemetals Ga, Ga-In-Sn and Bi-Pb-Sn-In alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 2500, '%', 1]

CoFeB
###Observation of spin-orbit magnetoresistance in CoFeB/heavy metal/MgO with existence of both spin Hall effect and Edelstein effect|Haoran Ni,Shuangfeng Li,Qihan Zhang,Jiguang Yao,Yongwei Cui,Xiaolong Fan,Desheng Xue###
(69239, 69241)
Observation of spin-orbit magnetoresistance in CoFeB/heavy metal/MgO with existence of both spin Hall effect and Edelstein effect.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[218.0, 2, 'nm', 3]

MgO
###Observation of spin-orbit magnetoresistance in CoFeB/heavy metal/MgO with existence of both spin Hall effect and Edelstein effect|Haoran Ni,Shuangfeng Li,Qihan Zhang,Jiguang Yao,Yongwei Cui,Xiaolong Fan,Desheng Xue###
(69247, 69248)
Observation of spin-orbit magnetoresistance in CoFeB/heavy metal/MgO with existence of both spin Hall effect and Edelstein effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[211.0, 2, 'nm', 3]

In
###Observation of spin-orbit magnetoresistance in CoFeB/heavy metal/MgO with existence of both spin Hall effect and Edelstein effect|Haoran Ni,Shuangfeng Li,Qihan Zhang,Jiguang Yao,Yongwei Cui,Xiaolong Fan,Desheng Xue###
(69271, 69271)
 In this paper, we report the observation of spin-orbit magnetoresistance(SOMR) in ferromagnetic metal/heavy metal/MgO system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 2, 'nm', 2]

SO
###Observation of spin-orbit magnetoresistance in CoFeB/heavy metal/MgO with existence of both spin Hall effect and Edelstein effect|Haoran Ni,Shuangfeng Li,Qihan Zhang,Jiguang Yao,Yongwei Cui,Xiaolong Fan,Desheng Xue###
(69296, 69297)
 In this paper, we report the observation of spin-orbit magnetoresistance(SOMR) in ferromagnetic metal/heavy metal/MgO system.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 2, 'nm', 2]

MgO
###Observation of spin-orbit magnetoresistance in CoFeB/heavy metal/MgO with existence of both spin Hall effect and Edelstein effect|Haoran Ni,Shuangfeng Li,Qihan Zhang,Jiguang Yao,Yongwei Cui,Xiaolong Fan,Desheng Xue###
(69312, 69313)
 In this paper, we report the observation of spin-orbit magnetoresistance(SOMR) in ferromagnetic metal/heavy metal/MgO system.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 2, 'nm', 2]

H
###Observation of spin-orbit magnetoresistance in CoFeB/heavy metal/MgO with existence of both spin Hall effect and Edelstein effect|Haoran Ni,Shuangfeng Li,Qihan Zhang,Jiguang Yao,Yongwei Cui,Xiaolong Fan,Desheng Xue###
(69346, 69346)
 We measure themagnetoresistance as the function of the thickness of heavy metal (HM) forCoFeB/HM<missing VAR>/MgO and CoFeB/HM<missing VAR> films where HM<missing VAR>  Pt and Ta.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 2, 'nm', 1]

CoFeB/H
###Observation of spin-orbit magnetoresistance in CoFeB/heavy metal/MgO with existence of both spin Hall effect and Edelstein effect|Haoran Ni,Shuangfeng Li,Qihan Zhang,Jiguang Yao,Yongwei Cui,Xiaolong Fan,Desheng Xue###
(69353, 69357)
 We measure themagnetoresistance as the function of the thickness of heavy metal (HM) forCoFeB/HM<missing VAR>/MgO and CoFeB/HM<missing VAR> films where HM<missing VAR>  Pt and Ta.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[102.0, 2, 'nm', 1]

MgO
###Observation of spin-orbit magnetoresistance in CoFeB/heavy metal/MgO with existence of both spin Hall effect and Edelstein effect|Haoran Ni,Shuangfeng Li,Qihan Zhang,Jiguang Yao,Yongwei Cui,Xiaolong Fan,Desheng Xue###
(69360, 69361)
 We measure themagnetoresistance as the function of the thickness of heavy metal (HM) forCoFeB/HM<missing VAR>/MgO and CoFeB/HM<missing VAR> films where HM<missing VAR>  Pt and Ta.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 2, 'nm', 1]

CoFeB/H
###Observation of spin-orbit magnetoresistance in CoFeB/heavy metal/MgO with existence of both spin Hall effect and Edelstein effect|Haoran Ni,Shuangfeng Li,Qihan Zhang,Jiguang Yao,Yongwei Cui,Xiaolong Fan,Desheng Xue###
(69365, 69369)
 We measure themagnetoresistance as the function of the thickness of heavy metal (HM) forCoFeB/HM<missing VAR>/MgO and CoFeB/HM<missing VAR> films where HM<missing VAR>  Pt and Ta.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[90.0, 2, 'nm', 1]

H
###Observation of spin-orbit magnetoresistance in CoFeB/heavy metal/MgO with existence of both spin Hall effect and Edelstein effect|Haoran Ni,Shuangfeng Li,Qihan Zhang,Jiguang Yao,Yongwei Cui,Xiaolong Fan,Desheng Xue###
(69376, 69376)
 We measure themagnetoresistance as the function of the thickness of heavy metal (HM) forCoFeB/HM<missing VAR>/MgO and CoFeB/HM<missing VAR> films where HM<missing VAR>  Pt and Ta.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 2, 'nm', 1]

Pt
###Observation of spin-orbit magnetoresistance in CoFeB/heavy metal/MgO with existence of both spin Hall effect and Edelstein effect|Haoran Ni,Shuangfeng Li,Qihan Zhang,Jiguang Yao,Yongwei Cui,Xiaolong Fan,Desheng Xue###
(69380, 69380)
 We measure themagnetoresistance as the function of the thickness of heavy metal (HM) forCoFeB/HM<missing VAR>/MgO and CoFeB/HM<missing VAR> films where HM<missing VAR>  Pt and Ta.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 2, 'nm', 1]

Ta
###Observation of spin-orbit magnetoresistance in CoFeB/heavy metal/MgO with existence of both spin Hall effect and Edelstein effect|Haoran Ni,Shuangfeng Li,Qihan Zhang,Jiguang Yao,Yongwei Cui,Xiaolong Fan,Desheng Xue###
(69384, 69384)
 We measure themagnetoresistance as the function of the thickness of heavy metal (HM) forCoFeB/HM<missing VAR>/MgO and CoFeB/HM<missing VAR> films where HM<missing VAR>  Pt and Ta.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 2, 'nm', 1]

S
###Observation of spin-orbit magnetoresistance in CoFeB/heavy metal/MgO with existence of both spin Hall effect and Edelstein effect|Haoran Ni,Shuangfeng Li,Qihan Zhang,Jiguang Yao,Yongwei Cui,Xiaolong Fan,Desheng Xue###
(69401, 69401)
 Besides the conventionalspin Hall magnetoresistance (SMR) peak, the evidence of the SOMR is indicatedby another peak of the MR ratio when the thickness of HM<missing VAR> is around 1  2 nm forCoFeB/HM<missing VAR>/MgO films, which is absent for CoFeB/HM<missing VAR> films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 2, 'nm', 0]

SO
###Observation of spin-orbit magnetoresistance in CoFeB/heavy metal/MgO with existence of both spin Hall effect and Edelstein effect|Haoran Ni,Shuangfeng Li,Qihan Zhang,Jiguang Yao,Yongwei Cui,Xiaolong Fan,Desheng Xue###
(69417, 69418)
 Besides the conventionalspin Hall magnetoresistance (SMR) peak, the evidence of the SOMR is indicatedby another peak of the MR ratio when the thickness of HM<missing VAR> is around 1  2 nm forCoFeB/HM<missing VAR>/MgO films, which is absent for CoFeB/HM<missing VAR> films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 2, 'nm', 0]

H
###Observation of spin-orbit magnetoresistance in CoFeB/heavy metal/MgO with existence of both spin Hall effect and Edelstein effect|Haoran Ni,Shuangfeng Li,Qihan Zhang,Jiguang Yao,Yongwei Cui,Xiaolong Fan,Desheng Xue###
(69450, 69450)
 Besides the conventionalspin Hall magnetoresistance (SMR) peak, the evidence of the SOMR is indicatedby another peak of the MR ratio when the thickness of HM<missing VAR> is around 1  2 nm forCoFeB/HM<missing VAR>/MgO films, which is absent for CoFeB/HM<missing VAR> films.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 2, 'nm', 0]

CoFeB/H
###Observation of spin-orbit magnetoresistance in CoFeB/heavy metal/MgO with existence of both spin Hall effect and Edelstein effect|Haoran Ni,Shuangfeng Li,Qihan Zhang,Jiguang Yao,Yongwei Cui,Xiaolong Fan,Desheng Xue###
(69464, 69468)
 Besides the conventionalspin Hall magnetoresistance (SMR) peak, the evidence of the SOMR is indicatedby another peak of the MR ratio when the thickness of HM<missing VAR> is around 1  2 nm forCoFeB/HM<missing VAR>/MgO films, which is absent for CoFeB/HM<missing VAR> films.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[5.0, 2, 'nm', 0]

MgO
###Observation of spin-orbit magnetoresistance in CoFeB/heavy metal/MgO with existence of both spin Hall effect and Edelstein effect|Haoran Ni,Shuangfeng Li,Qihan Zhang,Jiguang Yao,Yongwei Cui,Xiaolong Fan,Desheng Xue###
(69471, 69472)
 Besides the conventionalspin Hall magnetoresistance (SMR) peak, the evidence of the SOMR is indicatedby another peak of the MR ratio when the thickness of HM<missing VAR> is around 1  2 nm forCoFeB/HM<missing VAR>/MgO films, which is absent for CoFeB/HM<missing VAR> films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 2, 'nm', 0]

CoFeB/H
###Observation of spin-orbit magnetoresistance in CoFeB/heavy metal/MgO with existence of both spin Hall effect and Edelstein effect|Haoran Ni,Shuangfeng Li,Qihan Zhang,Jiguang Yao,Yongwei Cui,Xiaolong Fan,Desheng Xue###
(69485, 69489)
 Besides the conventionalspin Hall magnetoresistance (SMR) peak, the evidence of the SOMR is indicatedby another peak of the MR ratio when the thickness of HM<missing VAR> is around 1  2 nm forCoFeB/HM<missing VAR>/MgO films, which is absent for CoFeB/HM<missing VAR> films.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[26.0, 2, 'nm', 0]

SO
###Observation of spin-orbit magnetoresistance in CoFeB/heavy metal/MgO with existence of both spin Hall effect and Edelstein effect|Haoran Ni,Shuangfeng Li,Qihan Zhang,Jiguang Yao,Yongwei Cui,Xiaolong Fan,Desheng Xue###
(69501, 69502)
 We speculate the SOMRobserved in our experiment originates from the spin-orbit coupling at theHM<missing VAR>/MgO interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 2, 'nm', 1]

H
###Observation of spin-orbit magnetoresistance in CoFeB/heavy metal/MgO with existence of both spin Hall effect and Edelstein effect|Haoran Ni,Shuangfeng Li,Qihan Zhang,Jiguang Yao,Yongwei Cui,Xiaolong Fan,Desheng Xue###
(69532, 69532)
 We speculate the SOMRobserved in our experiment originates from the spin-orbit coupling at theHM<missing VAR>/MgO interface.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 2, 'nm', 1]

MgO
###Observation of spin-orbit magnetoresistance in CoFeB/heavy metal/MgO with existence of both spin Hall effect and Edelstein effect|Haoran Ni,Shuangfeng Li,Qihan Zhang,Jiguang Yao,Yongwei Cui,Xiaolong Fan,Desheng Xue###
(69535, 69536)
 We speculate the SOMRobserved in our experiment originates from the spin-orbit coupling at theHM<missing VAR>/MgO interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 2, 'nm', 1]

GaMnAs
###Comment on "Weak localization in GaMnAs: evidence of impurity band transport" by L. P. Rokhinson et. al. (Phys. Rev. B, 76, 161201 R; arXivCond-mat:0707.2416)|N. V. Agrinskaya,V. I. Kozub###
(69658, 69660)
Comment on Weak localization in GaMnAs evidence of impurity band transport by L<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 76, ',', 6],[40.0, 161201, 'R', 6],[78.0, 3, 'K', 7],[116.0, 3.4, 'K', 7]

P
###Comment on "Weak localization in GaMnAs: evidence of impurity band transport" by L. P. Rokhinson et. al. (Phys. Rev. B, 76, 161201 R; arXivCond-mat:0707.2416)|N. V. Agrinskaya,V. I. Kozub###
(69677, 69677)
 P.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 76, ',', 5],[23.0, 161201, 'R', 5],[61.0, 3, 'K', 6],[99.0, 3.4, 'K', 6]

B
###Comment on "Weak localization in GaMnAs: evidence of impurity band transport" by L. P. Rokhinson et. al. (Phys. Rev. B, 76, 161201 R; arXivCond-mat:0707.2416)|N. V. Agrinskaya,V. I. Kozub###
(69695, 69695)
 B, 76, 161201 R; arXivCond-mat0707.2416).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 76, ',', 0],[5.0, 161201, 'R', 0],[43.0, 3, 'K', 1],[81.0, 3.4, 'K', 1]

In
###Comment on "Weak localization in GaMnAs: evidence of impurity band transport" by L. P. Rokhinson et. al. (Phys. Rev. B, 76, 161201 R; arXivCond-mat:0707.2416)|N. V. Agrinskaya,V. I. Kozub###
(69767, 69767)
 We suggest that negative magnetoresistance in small magnetic fields attemperatures lower than 3 K reported in the paper under discussion may berelated to superconducting transition in In leads (with Tc  3.4 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 76, ',', 1],[67.0, 161201, 'R', 1],[29.0, 3, 'K', 0],[9.0, 3.4, 'K', 0]

Tc
###Comment on "Weak localization in GaMnAs: evidence of impurity band transport" by L. P. Rokhinson et. al. (Phys. Rev. B, 76, 161201 R; arXivCond-mat:0707.2416)|N. V. Agrinskaya,V. I. Kozub###
(69774, 69774)
 We suggest that negative magnetoresistance in small magnetic fields attemperatures lower than 3 K reported in the paper under discussion may berelated to superconducting transition in In leads (with Tc  3.4 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 76, ',', 1],[74.0, 161201, 'R', 1],[36.0, 3, 'K', 0],[2.0, 3.4, 'K', 0]

NiO
###Spin transport in antiferromagnetic NiO and magnetoresistance in Y$_3$Fe$_5$O$_{12}$/NiO/Pt structures|Yu-Ming Hung,Christian Hahn,Houchen Chang,Mingzhong Wu,Hendrik Ohldag,Andrew D. Kent###
(70177, 70178)
Spin transport in antiferromagnetic NiO and magnetoresistance in Y3Fe5O12/NiO/Pt structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[312.0, 4, 'nm', 6]

Y3Fe5O12/NiO/Pt
###Spin transport in antiferromagnetic NiO and magnetoresistance in Y$_3$Fe$_5$O$_{12}$/NiO/Pt structures|Yu-Ming Hung,Christian Hahn,Houchen Chang,Mingzhong Wu,Hendrik Ohldag,Andrew D. Kent###
(70186, 70196)
Spin transport in antiferromagnetic NiO and magnetoresistance in Y3Fe5O12/NiO/Pt structures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[294.0, 4, 'nm', 6]

YI
###Spin transport in antiferromagnetic NiO and magnetoresistance in Y$_3$Fe$_5$O$_{12}$/NiO/Pt structures|Yu-Ming Hung,Christian Hahn,Houchen Chang,Mingzhong Wu,Hendrik Ohldag,Andrew D. Kent###
(70225, 70226)
 We have studied spin transport and magnetoresistance in yttrium iron garnet(YIG)/NiO/Pt trilayers with varied NiO thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[264.0, 4, 'nm', 5]

NiO/Pt
###Spin transport in antiferromagnetic NiO and magnetoresistance in Y$_3$Fe$_5$O$_{12}$/NiO/Pt structures|Yu-Ming Hung,Christian Hahn,Houchen Chang,Mingzhong Wu,Hendrik Ohldag,Andrew D. Kent###
(70230, 70233)
 We have studied spin transport and magnetoresistance in yttrium iron garnet(YIG)/NiO/Pt trilayers with varied NiO thickness.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[257.0, 4, 'nm', 5]

NiO
###Spin transport in antiferromagnetic NiO and magnetoresistance in Y$_3$Fe$_5$O$_{12}$/NiO/Pt structures|Yu-Ming Hung,Christian Hahn,Houchen Chang,Mingzhong Wu,Hendrik Ohldag,Andrew D. Kent###
(70241, 70242)
 We have studied spin transport and magnetoresistance in yttrium iron garnet(YIG)/NiO/Pt trilayers with varied NiO thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[248.0, 4, 'nm', 5]

NiO
###Spin transport in antiferromagnetic NiO and magnetoresistance in Y$_3$Fe$_5$O$_{12}$/NiO/Pt structures|Yu-Ming Hung,Christian Hahn,Houchen Chang,Mingzhong Wu,Hendrik Ohldag,Andrew D. Kent###
(70260, 70261)
 To characterize the spintransport through NiO we excite ferromagnetic resonance in YIG<missing VAR> with a microwavefrequency magnetic field and detect the voltage associated with the inversespin-Hall effect (ISHE) in the Pt layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[229.0, 4, 'nm', 4]

YI
###Spin transport in antiferromagnetic NiO and magnetoresistance in Y$_3$Fe$_5$O$_{12}$/NiO/Pt structures|Yu-Ming Hung,Christian Hahn,Houchen Chang,Mingzhong Wu,Hendrik Ohldag,Andrew D. Kent###
(70273, 70274)
 To characterize the spintransport through NiO we excite ferromagnetic resonance in YIG<missing VAR> with a microwavefrequency magnetic field and detect the voltage associated with the inversespin-Hall effect (ISHE) in the Pt layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[216.0, 4, 'nm', 4]

ISH
###Spin transport in antiferromagnetic NiO and magnetoresistance in Y$_3$Fe$_5$O$_{12}$/NiO/Pt structures|Yu-Ming Hung,Christian Hahn,Houchen Chang,Mingzhong Wu,Hendrik Ohldag,Andrew D. Kent###
(70314, 70316)
 To characterize the spintransport through NiO we excite ferromagnetic resonance in YIG<missing VAR> with a microwavefrequency magnetic field and detect the voltage associated with the inversespin-Hall effect (ISHE) in the Pt layer.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[174.0, 4, 'nm', 4]

Pt
###Spin transport in antiferromagnetic NiO and magnetoresistance in Y$_3$Fe$_5$O$_{12}$/NiO/Pt structures|Yu-Ming Hung,Christian Hahn,Houchen Chang,Mingzhong Wu,Hendrik Ohldag,Andrew D. Kent###
(70324, 70324)
 To characterize the spintransport through NiO we excite ferromagnetic resonance in YIG<missing VAR> with a microwavefrequency magnetic field and detect the voltage associated with the inversespin-Hall effect (ISHE) in the Pt layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 4, 'nm', 4]

ISH
###Spin transport in antiferromagnetic NiO and magnetoresistance in Y$_3$Fe$_5$O$_{12}$/NiO/Pt structures|Yu-Ming Hung,Christian Hahn,Houchen Chang,Mingzhong Wu,Hendrik Ohldag,Andrew D. Kent###
(70331, 70333)
 The ISHE<missing VAR> signal is found to decayexponentially with the NiO thickness with a characteristic decay length of 3.9nm.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 4, 'nm', 3]

NiO
###Spin transport in antiferromagnetic NiO and magnetoresistance in Y$_3$Fe$_5$O$_{12}$/NiO/Pt structures|Yu-Ming Hung,Christian Hahn,Houchen Chang,Mingzhong Wu,Hendrik Ohldag,Andrew D. Kent###
(70353, 70354)
 The ISHE<missing VAR> signal is found to decayexponentially with the NiO thickness with a characteristic decay length of 3.9nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 4, 'nm', 3]

S
###Spin transport in antiferromagnetic NiO and magnetoresistance in Y$_3$Fe$_5$O$_{12}$/NiO/Pt structures|Yu-Ming Hung,Christian Hahn,Houchen Chang,Mingzhong Wu,Hendrik Ohldag,Andrew D. Kent###
(70424, 70424)
 Thesymmetry of the magnetoresistive response is consistent with spin-Hallmagnetoresistance (SMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 4, 'nm', 1]

ISH
###Spin transport in antiferromagnetic NiO and magnetoresistance in Y$_3$Fe$_5$O$_{12}$/NiO/Pt structures|Yu-Ming Hung,Christian Hahn,Houchen Chang,Mingzhong Wu,Hendrik Ohldag,Andrew D. Kent###
(70441, 70443)
 However, in contrast to the ISHE<missing VAR> response, as the NiOthickness increases the SMR signal goes towards zero abruptly at a NiOthickness of simeq 4 nm, highlighting the different length scales associatedwith the spin-transport in NiO and SMR in such trilayers.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 4, 'nm', 0]

NiO
###Spin transport in antiferromagnetic NiO and magnetoresistance in Y$_3$Fe$_5$O$_{12}$/NiO/Pt structures|Yu-Ming Hung,Christian Hahn,Houchen Chang,Mingzhong Wu,Hendrik Ohldag,Andrew D. Kent###
(70453, 70454)
 However, in contrast to the ISHE<missing VAR> response, as the NiOthickness increases the SMR signal goes towards zero abruptly at a NiOthickness of simeq 4 nm, highlighting the different length scales associatedwith the spin-transport in NiO and SMR in such trilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 4, 'nm', 0]

S
###Spin transport in antiferromagnetic NiO and magnetoresistance in Y$_3$Fe$_5$O$_{12}$/NiO/Pt structures|Yu-Ming Hung,Christian Hahn,Houchen Chang,Mingzhong Wu,Hendrik Ohldag,Andrew D. Kent###
(70463, 70463)
 However, in contrast to the ISHE<missing VAR> response, as the NiOthickness increases the SMR signal goes towards zero abruptly at a NiOthickness of simeq 4 nm, highlighting the different length scales associatedwith the spin-transport in NiO and SMR in such trilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 4, 'nm', 0]

NiO
###Spin transport in antiferromagnetic NiO and magnetoresistance in Y$_3$Fe$_5$O$_{12}$/NiO/Pt structures|Yu-Ming Hung,Christian Hahn,Houchen Chang,Mingzhong Wu,Hendrik Ohldag,Andrew D. Kent###
(70481, 70482)
 However, in contrast to the ISHE<missing VAR> response, as the NiOthickness increases the SMR signal goes towards zero abruptly at a NiOthickness of simeq 4 nm, highlighting the different length scales associatedwith the spin-transport in NiO and SMR in such trilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 4, 'nm', 0]

NiO
###Spin transport in antiferromagnetic NiO and magnetoresistance in Y$_3$Fe$_5$O$_{12}$/NiO/Pt structures|Yu-Ming Hung,Christian Hahn,Houchen Chang,Mingzhong Wu,Hendrik Ohldag,Andrew D. Kent###
(70516, 70517)
 However, in contrast to the ISHE<missing VAR> response, as the NiOthickness increases the SMR signal goes towards zero abruptly at a NiOthickness of simeq 4 nm, highlighting the different length scales associatedwith the spin-transport in NiO and SMR in such trilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 4, 'nm', 0]

S
###Spin transport in antiferromagnetic NiO and magnetoresistance in Y$_3$Fe$_5$O$_{12}$/NiO/Pt structures|Yu-Ming Hung,Christian Hahn,Houchen Chang,Mingzhong Wu,Hendrik Ohldag,Andrew D. Kent###
(70521, 70521)
 However, in contrast to the ISHE<missing VAR> response, as the NiOthickness increases the SMR signal goes towards zero abruptly at a NiOthickness of simeq 4 nm, highlighting the different length scales associatedwith the spin-transport in NiO and SMR in such trilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 4, 'nm', 0]

In
###Nonmonotonic magnetoresistance of a two-dimensional viscous electron-hole fluid in a confined geometry|P. S. Alekseev,A. P. Dmitriev,I. V. Gornyi,V. Yu. Kachorovskii,B. N. Narozhny,M. Titov###
(70613, 70613)
 In a confinedgeometry (e.g.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Nonmonotonic magnetoresistance of a two-dimensional viscous electron-hole fluid in a confined geometry|P. S. Alekseev,A. P. Dmitriev,I. V. Gornyi,V. Yu. Kachorovskii,B. N. Narozhny,M. Titov###
(70690, 70690)
 Intwo-component systems near charge neutrality the hydrodynamic flow of chargecarriers is strongly affected by the mutual friction between the twoconstituents.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Nonmonotonic magnetoresistance of a two-dimensional viscous electron-hole fluid in a confined geometry|P. S. Alekseev,A. P. Dmitriev,I. V. Gornyi,V. Yu. Kachorovskii,B. N. Narozhny,M. Titov###
(70742, 70742)
 At low fields, the magnetoresistance is negative, however at highfields the interplay between electron-hole scattering, recombination, andviscosity results in a dramatic change of the flow profile themagnetoresistance changes its sign and eventually becomes linear in very highfields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cd3As2
###Giant anisotropic magnetoresistance and planar Hall effect in the Dirac semimetal Cd3As2|Hui Li,Huanwen Wang,Hongtao He,Jiannong Wang,Shun-Qing Shen###
(70907, 70910)
Giant anisotropic magnetoresistance and planar Hall effect in the Dirac semimetal Cd3As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, -68, '%', 3],[132.0, 2, 'K', 3],[135.0, 10, 'T', 3]

Cd3As2
###Giant anisotropic magnetoresistance and planar Hall effect in the Dirac semimetal Cd3As2|Hui Li,Huanwen Wang,Hongtao He,Jiannong Wang,Shun-Qing Shen###
(70984, 70987)
 Here, we report experimental observations in the Diracsemimetal Cd3As2 of giant anisotropic magnetoresistance and its transverseversion, called the planar Hall effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, -68, '%', 1],[55.0, 2, 'K', 1],[58.0, 10, 'T', 1]

WTe2
###Non-stoichiometry effects on the extreme magnetoresistance in Weyl semimetal WTe2|J. X. Gong,J. Yang,M. Ge,Y. J. Wang,D. D. Liang,L. Luo,X. Yan,W. L. Zhen,S. R. Weng,L. Pi,C. J. Zhang,W. K. Zhu###
(71214, 71216)
Non-stoichiometry effects on the extreme magnetoresistance in Weyl semimetal WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Non-stoichiometry effects on the extreme magnetoresistance in Weyl semimetal WTe2|J. X. Gong,J. Yang,M. Ge,Y. J. Wang,D. D. Liang,L. Luo,X. Yan,W. L. Zhen,S. R. Weng,L. Pi,C. J. Zhang,W. K. Zhu###
(71248, 71250)
 Non-stoichiometry effect on the extreme magnetoresistance is systematicallyinvestigated for the Weyl semimetal WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Te
###Non-stoichiometry effects on the extreme magnetoresistance in Weyl semimetal WTe2|J. X. Gong,J. Yang,M. Ge,Y. J. Wang,D. D. Liang,L. Luo,X. Yan,W. L. Zhen,S. R. Weng,L. Pi,C. J. Zhang,W. K. Zhu###
(71287, 71287)
 Magnetoresistance and Hallresistivity are measured for the as-grown samples with a slight difference inTe vacancies and the annealed samples with increased Te vacancies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Te
###Non-stoichiometry effects on the extreme magnetoresistance in Weyl semimetal WTe2|J. X. Gong,J. Yang,M. Ge,Y. J. Wang,D. D. Liang,L. Luo,X. Yan,W. L. Zhen,S. R. Weng,L. Pi,C. J. Zhang,W. K. Zhu###
(71303, 71303)
 Magnetoresistance and Hallresistivity are measured for the as-grown samples with a slight difference inTe vacancies and the annealed samples with increased Te vacancies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Non-stoichiometry effects on the extreme magnetoresistance in Weyl semimetal WTe2|J. X. Gong,J. Yang,M. Ge,Y. J. Wang,D. D. Liang,L. Luo,X. Yan,W. L. Zhen,S. R. Weng,L. Pi,C. J. Zhang,W. K. Zhu###
(71467, 71469)
 Thus, compensation effect and ultrahigh mobilityare probably the main driving force of the extreme magnetoresistance in WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La2-xCe
###Anomalous normal state magnetotransport in an electron-doped cuprate|Nicholas R. Poniatowski,Tarapada Sarkar,Richard L. Greene###
(71880, 71884)
 We report magnetoresistance and Hall angle measurements of the electron-dopedcuprate La2-xCex<missing VAR>CuO4 over a wide range of dopings from x<missing VAR>  0.08 -0.17.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[32.0, 100, 'K', 1]

CuO4
###Anomalous normal state magnetotransport in an electron-doped cuprate|Nicholas R. Poniatowski,Tarapada Sarkar,Richard L. Greene###
(71886, 71888)
 We report magnetoresistance and Hall angle measurements of the electron-dopedcuprate La2-xCex<missing VAR>CuO4 over a wide range of dopings from x<missing VAR>  0.08 -0.17.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 100, 'K', 1]

H3
###Anomalous normal state magnetotransport in an electron-doped cuprate|Nicholas R. Poniatowski,Tarapada Sarkar,Richard L. Greene###
(71929, 71930)
 Above 100 K, we find an unconventional sim H3/2 magnetic fielddependence of the magnetoresistance observed in all samples doped within thesuperconducting dome.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 100, 'K', 0]

H
###Anomalous normal state magnetotransport in an electron-doped cuprate|Nicholas R. Poniatowski,Tarapada Sarkar,Richard L. Greene###
(72112, 72112)
 We also find a strongdoping dependence of the Hall angle with an unconventional temperaturedependence of cot thetaH sim T<missing VAR>4 (T<missing VAR>2.5) for samples doped below(above) the Fermi surface reconstruction doping x<missing VAR>textFSR<missing VAR>  0.14.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[196.0, 100, 'K', 3]

FS
###Anomalous normal state magnetotransport in an electron-doped cuprate|Nicholas R. Poniatowski,Tarapada Sarkar,Richard L. Greene###
(72149, 72150)
 We also find a strongdoping dependence of the Hall angle with an unconventional temperaturedependence of cot thetaH sim T<missing VAR>4 (T<missing VAR>2.5) for samples doped below(above) the Fermi surface reconstruction doping x<missing VAR>textFSR<missing VAR>  0.14.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[233.0, 100, 'K', 3]

H
###Theory of unidirectional spin Hall magnetoresistance in heavy-metal/ferromagnetic-metal bilayers|Steven S. -L. Zhang,Giovanni Vignale###
(72226, 72226)
 Recent experiments have revealed nonlinear features of the magnetoresistancein metallic bilayers consisting of a heavy-metal (HM) and a ferromagnetic metal(FM).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Theory of unidirectional spin Hall magnetoresistance in heavy-metal/ferromagnetic-metal bilayers|Steven S. -L. Zhang,Giovanni Vignale###
(72240, 72240)
 Recent experiments have revealed nonlinear features of the magnetoresistancein metallic bilayers consisting of a heavy-metal (HM) and a ferromagnetic metal(FM).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Theory of unidirectional spin Hall magnetoresistance in heavy-metal/ferromagnetic-metal bilayers|Steven S. -L. Zhang,Giovanni Vignale###
(72340, 72340)
 We attribute such nonlinear transport behavior to thespin-polarization dependence of the electron mobility in the FM<missing VAR> layer acting inconcert with the spin accumulation induced in that layer by the spin Hallcurrent originating in the bulk of the HM<missing VAR> layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Theory of unidirectional spin Hall magnetoresistance in heavy-metal/ferromagnetic-metal bilayers|Steven S. -L. Zhang,Giovanni Vignale###
(72391, 72391)
 We attribute such nonlinear transport behavior to thespin-polarization dependence of the electron mobility in the FM<missing VAR> layer acting inconcert with the spin accumulation induced in that layer by the spin Hallcurrent originating in the bulk of the HM<missing VAR> layer.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SH
###Theory of unidirectional spin Hall magnetoresistance in heavy-metal/ferromagnetic-metal bilayers|Steven S. -L. Zhang,Giovanni Vignale###
(72464, 72465)
 An explicit expression for thenonlinear magnetoresistance is derived based on a simple drift-diffusion model,which shows that the nonlinear magnetoresistance appears at the first order ofspin Hall angle (SHA), and changes sign when the current is reversed, inagreement with the experimental observations.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(La0.3Sr0.7)
###Low temperature magnetoresistance of (111) (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)/SrTiO$_3$|V. V. Bal,Z. Huang,K. Han,Ariando,T. Venkatesan,V. Chandrasekhar###
(72564, 72569)
Low temperature magnetoresistance of (111) (La0.3Sr0.7)(Al0.65Ta0.35)/SrTiO3.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(Al0.65Ta0.35)
###Low temperature magnetoresistance of (111) (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)/SrTiO$_3$|V. V. Bal,Z. Huang,K. Han,Ariando,T. Venkatesan,V. Chandrasekhar###
(72570, 72575)
Low temperature magnetoresistance of (111) (La0.3Sr0.7)(Al0.65Ta0.35)/SrTiO3.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0.65,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.35,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Low temperature magnetoresistance of (111) (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)/SrTiO$_3$|V. V. Bal,Z. Huang,K. Han,Ariando,T. Venkatesan,V. Chandrasekhar###
(72577, 72580)
Low temperature magnetoresistance of (111) (La0.3Sr0.7)(Al0.65Ta0.35)/SrTiO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Low temperature magnetoresistance of (111) (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)/SrTiO$_3$|V. V. Bal,Z. Huang,K. Han,Ariando,T. Venkatesan,V. Chandrasekhar###
(72595, 72598)
 The two dimensional conducting interfaces in SrTiO3-based systems areknown to show a variety of coexisting and competing phenomena in a complexphase space.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Low temperature magnetoresistance of (111) (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)/SrTiO$_3$|V. V. Bal,Z. Huang,K. Han,Ariando,T. Venkatesan,V. Chandrasekhar###
(72747, 72750)
 Here we reviewall the phenomena that can contribute to transport in SrTiO3-basedconducting interfaces at low temperatures, and discuss possible ways todistinguish between various phenomena.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(La0.3Sr0.7)
###Low temperature magnetoresistance of (111) (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)/SrTiO$_3$|V. V. Bal,Z. Huang,K. Han,Ariando,T. Venkatesan,V. Chandrasekhar###
(72812, 72817)
 We apply this analysis to themagnetoresistance data of (111) oriented(La0.3Sr0.7)(Al0.65Ta0.35)/ST<missing VAR>O (L<missing VAR>SAT<missing VAR>/ST<missing VAR>O) heterostructuresin perpendicular field, and find an excess negative magnetoresistancecontribution which cannot be explained by weak localization alone.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(Al0.65Ta0.35)
###Low temperature magnetoresistance of (111) (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)/SrTiO$_3$|V. V. Bal,Z. Huang,K. Han,Ariando,T. Venkatesan,V. Chandrasekhar###
(72818, 72823)
 We apply this analysis to themagnetoresistance data of (111) oriented(La0.3Sr0.7)(Al0.65Ta0.35)/ST<missing VAR>O (L<missing VAR>SAT<missing VAR>/ST<missing VAR>O) heterostructuresin perpendicular field, and find an excess negative magnetoresistancecontribution which cannot be explained by weak localization alone.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0.65,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.35,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Low temperature magnetoresistance of (111) (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)/SrTiO$_3$|V. V. Bal,Z. Huang,K. Han,Ariando,T. Venkatesan,V. Chandrasekhar###
(72825, 72825)
 We apply this analysis to themagnetoresistance data of (111) oriented(La0.3Sr0.7)(Al0.65Ta0.35)/ST<missing VAR>O (L<missing VAR>SAT<missing VAR>/ST<missing VAR>O) heterostructuresin perpendicular field, and find an excess negative magnetoresistancecontribution which cannot be explained by weak localization alone.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Low temperature magnetoresistance of (111) (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)/SrTiO$_3$|V. V. Bal,Z. Huang,K. Han,Ariando,T. Venkatesan,V. Chandrasekhar###
(72827, 72827)
 We apply this analysis to themagnetoresistance data of (111) oriented(La0.3Sr0.7)(Al0.65Ta0.35)/ST<missing VAR>O (L<missing VAR>SAT<missing VAR>/ST<missing VAR>O) heterostructuresin perpendicular field, and find an excess negative magnetoresistancecontribution which cannot be explained by weak localization alone.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Low temperature magnetoresistance of (111) (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)/SrTiO$_3$|V. V. Bal,Z. Huang,K. Han,Ariando,T. Venkatesan,V. Chandrasekhar###
(72831, 72831)
 We apply this analysis to themagnetoresistance data of (111) oriented(La0.3Sr0.7)(Al0.65Ta0.35)/ST<missing VAR>O (L<missing VAR>SAT<missing VAR>/ST<missing VAR>O) heterostructuresin perpendicular field, and find an excess negative magnetoresistancecontribution which cannot be explained by weak localization alone.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Low temperature magnetoresistance of (111) (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)/SrTiO$_3$|V. V. Bal,Z. Huang,K. Han,Ariando,T. Venkatesan,V. Chandrasekhar###
(72835, 72835)
 We apply this analysis to themagnetoresistance data of (111) oriented(La0.3Sr0.7)(Al0.65Ta0.35)/ST<missing VAR>O (L<missing VAR>SAT<missing VAR>/ST<missing VAR>O) heterostructuresin perpendicular field, and find an excess negative magnetoresistancecontribution which cannot be explained by weak localization alone.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Low temperature magnetoresistance of (111) (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)/SrTiO$_3$|V. V. Bal,Z. Huang,K. Han,Ariando,T. Venkatesan,V. Chandrasekhar###
(72837, 72837)
 We apply this analysis to themagnetoresistance data of (111) oriented(La0.3Sr0.7)(Al0.65Ta0.35)/ST<missing VAR>O (L<missing VAR>SAT<missing VAR>/ST<missing VAR>O) heterostructuresin perpendicular field, and find an excess negative magnetoresistancecontribution which cannot be explained by weak localization alone.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Anomalous Hall magnetoresistance in a ferromagnet|Yumeng Yang,Ziyan Luo,Haijun Wu,Yanjun Xu,Run-Wei Li,Stephen J. Pennycook,Shufeng Zhang,Yihong Wu###
(73012, 73012)
 In addition to charge, theanomalous Hall effect also leads to spin accumulation at the surfacesperpendicular to both the current and magnetization direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[219.0, 0.17, 'to', 2],[220.0, 0.65, 'and', 2]

Fe1-x
###Anomalous Hall magnetoresistance in a ferromagnet|Yumeng Yang,Ziyan Luo,Haijun Wu,Yanjun Xu,Run-Wei Li,Stephen J. Pennycook,Shufeng Zhang,Yihong Wu###
(73196, 73199)
 The anomalous Hall magnetoresistance isobserved in four types of samples co-sputtered (Fe1-xMnx)0.6Pt0.4, Fe1-xMnxand Pt multilayer, Fe1-xMnx with x<missing VAR>  0.17 to 0.65 and Fe, and analyzed usingthe drift-diffusion model.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[32.0, 0.17, 'to', 0],[33.0, 0.65, 'and', 0]

Pt0.4
###Anomalous Hall magnetoresistance in a ferromagnet|Yumeng Yang,Ziyan Luo,Haijun Wu,Yanjun Xu,Run-Wei Li,Stephen J. Pennycook,Shufeng Zhang,Yihong Wu###
(73203, 73204)
 The anomalous Hall magnetoresistance isobserved in four types of samples co-sputtered (Fe1-xMnx)0.6Pt0.4, Fe1-xMnxand Pt multilayer, Fe1-xMnx with x<missing VAR>  0.17 to 0.65 and Fe, and analyzed usingthe drift-diffusion model.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 0.17, 'to', 0],[28.0, 0.65, 'and', 0]

Fe1-x
###Anomalous Hall magnetoresistance in a ferromagnet|Yumeng Yang,Ziyan Luo,Haijun Wu,Yanjun Xu,Run-Wei Li,Stephen J. Pennycook,Shufeng Zhang,Yihong Wu###
(73207, 73210)
 The anomalous Hall magnetoresistance isobserved in four types of samples co-sputtered (Fe1-xMnx)0.6Pt0.4, Fe1-xMnxand Pt multilayer, Fe1-xMnx with x<missing VAR>  0.17 to 0.65 and Fe, and analyzed usingthe drift-diffusion model.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[21.0, 0.17, 'to', 0],[22.0, 0.65, 'and', 0]

Pt
###Anomalous Hall magnetoresistance in a ferromagnet|Yumeng Yang,Ziyan Luo,Haijun Wu,Yanjun Xu,Run-Wei Li,Stephen J. Pennycook,Shufeng Zhang,Yihong Wu###
(73216, 73216)
 The anomalous Hall magnetoresistance isobserved in four types of samples co-sputtered (Fe1-xMnx)0.6Pt0.4, Fe1-xMnxand Pt multilayer, Fe1-xMnx with x<missing VAR>  0.17 to 0.65 and Fe, and analyzed usingthe drift-diffusion model.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 0.17, 'to', 0],[16.0, 0.65, 'and', 0]

Fe1-x
###Anomalous Hall magnetoresistance in a ferromagnet|Yumeng Yang,Ziyan Luo,Haijun Wu,Yanjun Xu,Run-Wei Li,Stephen J. Pennycook,Shufeng Zhang,Yihong Wu###
(73221, 73224)
 The anomalous Hall magnetoresistance isobserved in four types of samples co-sputtered (Fe1-xMnx)0.6Pt0.4, Fe1-xMnxand Pt multilayer, Fe1-xMnx with x<missing VAR>  0.17 to 0.65 and Fe, and analyzed usingthe drift-diffusion model.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[7.0, 0.17, 'to', 0],[8.0, 0.65, 'and', 0]

Fe
###Anomalous Hall magnetoresistance in a ferromagnet|Yumeng Yang,Ziyan Luo,Haijun Wu,Yanjun Xu,Run-Wei Li,Stephen J. Pennycook,Shufeng Zhang,Yihong Wu###
(73234, 73234)
 The anomalous Hall magnetoresistance isobserved in four types of samples co-sputtered (Fe1-xMnx)0.6Pt0.4, Fe1-xMnxand Pt multilayer, Fe1-xMnx with x<missing VAR>  0.17 to 0.65 and Fe, and analyzed usingthe drift-diffusion model.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 0.17, 'to', 0],[2.0, 0.65, 'and', 0]

ScSb
###Extremely large magnetoresistance and the complete determination of the Fermi surface topology in the semimetal ScSb|Y. J. Hu,E. I. Paredes Aulestia,K. F. Tse,C. N. Kuo,J. Y. Zhu,C. S. Lue,K. T. Lai,Swee K. Goh###
(73336, 73337)
Extremely large magnetoresistance and the complete determination of the Fermi surface topology in the semimetal ScSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 2, 'K', 2],[61.0, 14, 'T', 2]

ScSb
###Extremely large magnetoresistance and the complete determination of the Fermi surface topology in the semimetal ScSb|Y. J. Hu,E. I. Paredes Aulestia,K. F. Tse,C. N. Kuo,J. Y. Zhu,C. S. Lue,K. T. Lai,Swee K. Goh###
(73350, 73351)
 We report the magnetoresistance of ScSb, which is a semimetal with a simplerocksalt-type structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 2, 'K', 1],[47.0, 14, 'T', 1]

ScSb
###Extremely large magnetoresistance and the complete determination of the Fermi surface topology in the semimetal ScSb|Y. J. Hu,E. I. Paredes Aulestia,K. F. Tse,C. N. Kuo,J. Y. Zhu,C. S. Lue,K. T. Lai,Swee K. Goh###
(73559, 73560)
 The electron concentration (n) and the hole concentration (p) areextracted from our analysis, which indicate that ScSb is a nearly compensatedsemimetal with n/papprox0.93.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 2, 'K', 2],[161.0, 14, 'T', 2]

ScSb
###Extremely large magnetoresistance and the complete determination of the Fermi surface topology in the semimetal ScSb|Y. J. Hu,E. I. Paredes Aulestia,K. F. Tse,C. N. Kuo,J. Y. Zhu,C. S. Lue,K. T. Lai,Swee K. Goh###
(73616, 73617)
 The calculated band structure indicates theabsence of a band inversion, and the large magnetoresistance in ScSb can beattributed to the nearly perfect compensation of electrons and holes, despitethe existence of the additional hole pocket.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[221.0, 2, 'K', 3],[218.0, 14, 'T', 3]

In
###Sign of viscous magnetoresistance in electron fluids|Ipsita Mandal,Andrew Lucas###
(73686, 73686)
 In sufficiently clean metals, it is possible for electrons to collectivelyflow as a viscous fluid at finite temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CeBi
###Magnetization governed magnetoresistance anisotropy in topological semimetal CeBi|Yang-Yang Lyu,Fei Han,Zhi-Li Xiao,Jing Xu,Yong-Lei Wang,Hua-Bing Wang,Jin-Ke Bao,Duck Young Chung,Mingda Li,Ivar Martin,Ulrich Welp,Mercouri G. Kanatzidis,Wai-Kwong Kwok###
(73978, 73979)
Magnetization governed magnetoresistance anisotropy in topological semimetal CeBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 4, 'f', 3]

CeBi
###Magnetization governed magnetoresistance anisotropy in topological semimetal CeBi|Yang-Yang Lyu,Fei Han,Zhi-Li Xiao,Jing Xu,Yong-Lei Wang,Hua-Bing Wang,Jin-Ke Bao,Duck Young Chung,Mingda Li,Ivar Martin,Ulrich Welp,Mercouri G. Kanatzidis,Wai-Kwong Kwok###
(74080, 74081)
 Here, we report on themagnetoresistance anisotropy of topological semimetal CeBi, which has tunablemagnetic structures arising from localized Ce 4f electrons and exhibits bothnegative and positive magnetoresistances, depending on the temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 4, 'f', 0]

Ce
###Magnetization governed magnetoresistance anisotropy in topological semimetal CeBi|Yang-Yang Lyu,Fei Han,Zhi-Li Xiao,Jing Xu,Yong-Lei Wang,Hua-Bing Wang,Jin-Ke Bao,Duck Young Chung,Mingda Li,Ivar Martin,Ulrich Welp,Mercouri G. Kanatzidis,Wai-Kwong Kwok###
(74101, 74101)
 Here, we report on themagnetoresistance anisotropy of topological semimetal CeBi, which has tunablemagnetic structures arising from localized Ce 4f electrons and exhibits bothnegative and positive magnetoresistances, depending on the temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[1.0, 4, 'f', 0]

CeBi
###Magnetization governed magnetoresistance anisotropy in topological semimetal CeBi|Yang-Yang Lyu,Fei Han,Zhi-Li Xiao,Jing Xu,Yong-Lei Wang,Hua-Bing Wang,Jin-Ke Bao,Duck Young Chung,Mingda Li,Ivar Martin,Ulrich Welp,Mercouri G. Kanatzidis,Wai-Kwong Kwok###
(74266, 74267)
 The results reveal the strong interaction betweenconduction electrons and magnetization in CeBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 4, 'f', 2]

ZrSiS
###Origin of the butterfly magnetoresistance in ZrSiS|J. A. Voerman,L. Mulder,J. C. de Boer,Y. Huang,L. M. Schoop,Chuan Li,A. Brinkman###
(74346, 74348)
Origin of the butterfly magnetoresistance in ZrSiS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZrSiS
###Origin of the butterfly magnetoresistance in ZrSiS|J. A. Voerman,L. Mulder,J. C. de Boer,Y. Huang,L. M. Schoop,Chuan Li,A. Brinkman###
(74351, 74353)
 ZrSiS has been identified as a topological material made from non-toxic andearth-abundant elements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZrSiS
###Origin of the butterfly magnetoresistance in ZrSiS|J. A. Voerman,L. Mulder,J. C. de Boer,Y. Huang,L. M. Schoop,Chuan Li,A. Brinkman###
(74609, 74611)
 Although the link betweenthe butterfly magnetoresistance and the Berry phase remains uncertain, thetopological nature of ZrSiS is confirmed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Microscopic theory of OMAR based on kinetic equations for quantum spin correlations|A. V. Shumilin###
(74632, 74632)
Microscopic theory of OMAR based on kinetic equations for quantum spin correlations.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Microscopic theory of OMAR based on kinetic equations for quantum spin correlations|A. V. Shumilin###
(74742, 74742)
 The approach is applied to the problem of thebipolaron mechanism of organic magnetoresistance (OMAR) in the limit of largeHubbard energy and small applied electric field.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H2
###Microscopic theory of OMAR based on kinetic equations for quantum spin correlations|A. V. Shumilin###
(74900, 74901)
 Different model systems with identicalhyperfine interaction but different statistics of electron hops lead todifferent lineshapes of magnetoresistance including the two empirical lawsH2/(H2  H02) and H2/(H  H0)2 that are commonly used to fitexperimental results.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H02
###Microscopic theory of OMAR based on kinetic equations for quantum spin correlations|A. V. Shumilin###
(74904, 74906)
 Different model systems with identicalhyperfine interaction but different statistics of electron hops lead todifferent lineshapes of magnetoresistance including the two empirical lawsH2/(H2  H02) and H2/(H  H0)2 that are commonly used to fitexperimental results.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Microscopic theory of OMAR based on kinetic equations for quantum spin correlations|A. V. Shumilin###
(74915, 74915)
 Different model systems with identicalhyperfine interaction but different statistics of electron hops lead todifferent lineshapes of magnetoresistance including the two empirical lawsH2/(H2  H02) and H2/(H  H0)2 that are commonly used to fitexperimental results.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H0
###Microscopic theory of OMAR based on kinetic equations for quantum spin correlations|A. V. Shumilin###
(74918, 74919)
 Different model systems with identicalhyperfine interaction but different statistics of electron hops lead todifferent lineshapes of magnetoresistance including the two empirical lawsH2/(H2  H02) and H2/(H  H0)2 that are commonly used to fitexperimental results.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ag2Se
###Theory for the negative longitudinal magnetoresistance in the quantum limit of Kramers Weyl semimetals|Bo Wan,Frank Schindler,Ke Wang,Kai Wu,Xiangang Wan,Titus Neupert,Hai-Zhou Lu###
(75392, 75394)
 Recently, anegative magnetoresistance has been observed in the quantum limit ofbeta-Ag2Se, where only one band of Landau levels is occupied in a strongmagnetic field parallel to the applied current.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ag2Se
###Theory for the negative longitudinal magnetoresistance in the quantum limit of Kramers Weyl semimetals|Bo Wan,Frank Schindler,Ke Wang,Kai Wu,Xiangang Wan,Titus Neupert,Hai-Zhou Lu###
(75439, 75441)
 beta-Ag2Se is a materialthat host a Kramers Weyl cone with band degeneracy near the Fermi energy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ag2Se
###Theory for the negative longitudinal magnetoresistance in the quantum limit of Kramers Weyl semimetals|Bo Wan,Frank Schindler,Ke Wang,Kai Wu,Xiangang Wan,Titus Neupert,Hai-Zhou Lu###
(75675, 75677)
 Wefind that it requires screened Coulomb scattering potentials between electronsand impurities, which is naturally the case in beta-Ag2Se.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Quasi-isotropic orbital magnetoresistance in lightly doped SrTiO$_{3}$|Clément Collignon,Yudai Awashima,Ravi,Xiao Lin,Carl Willem Rischau,Anissa Acheche,Baptiste Vignolle,Cyril Proust,Yuki Fuseya,Kamran Behnia,Benoît Fauqué###
(75702, 75705)
Quasi-isotropic orbital magnetoresistance in lightly doped SrTiO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3-x
###Quasi-isotropic orbital magnetoresistance in lightly doped SrTiO$_{3}$|Clément Collignon,Yudai Awashima,Ravi,Xiao Lin,Carl Willem Rischau,Anissa Acheche,Baptiste Vignolle,Cyril Proust,Yuki Fuseya,Kamran Behnia,Benoît Fauqué###
(75794, 75799)
 Here we report on the observation of a large and non saturatingmagnetoresistance in lightly doped SrTiO3-x independent of the relativeorientation of current and magnetic field.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

CrSBr
###Hidden low-temperature magnetic order revealed through magnetotransport in monolayer CrSBr|Evan J. Telford,Avalon H. Dismukes,Raymond L. Dudley,Ren A. Wiscons,Kihong Lee,Jessica Yu,Sara Shabani,Allen Scheie,Kenji Watanabe,Takashi Taniguchi,Di Xiao,Abhay N. Pasupathy,Colin Nuckolls,Xiaoyang Zhu,Cory R. Dean,Xavier Roy###
(76031, 76033)
Hidden low-temperature magnetic order revealed through magnetotransport in monolayer CrSBr.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CrI3
###Hidden low-temperature magnetic order revealed through magnetotransport in monolayer CrSBr|Evan J. Telford,Avalon H. Dismukes,Raymond L. Dudley,Ren A. Wiscons,Kihong Lee,Jessica Yu,Sara Shabani,Allen Scheie,Kenji Watanabe,Takashi Taniguchi,Di Xiao,Abhay N. Pasupathy,Colin Nuckolls,Xiaoyang Zhu,Cory R. Dean,Xavier Roy###
(76124, 76126)
Compared to bulk crystals, two-dimensional magnetic semiconductors have greatertunability, as illustrated by the gate modulation of magnetism in exfoliatedCrI3 and Cr2Ge2Te6, but their electrically insulating propertieslimit their utility in devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr2Ge2Te6
###Hidden low-temperature magnetic order revealed through magnetotransport in monolayer CrSBr|Evan J. Telford,Avalon H. Dismukes,Raymond L. Dudley,Ren A. Wiscons,Kihong Lee,Jessica Yu,Sara Shabani,Allen Scheie,Kenji Watanabe,Takashi Taniguchi,Di Xiao,Abhay N. Pasupathy,Colin Nuckolls,Xiaoyang Zhu,Cory R. Dean,Xavier Roy###
(76130, 76135)
Compared to bulk crystals, two-dimensional magnetic semiconductors have greatertunability, as illustrated by the gate modulation of magnetism in exfoliatedCrI3 and Cr2Ge2Te6, but their electrically insulating propertieslimit their utility in devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CrSBr
###Hidden low-temperature magnetic order revealed through magnetotransport in monolayer CrSBr|Evan J. Telford,Avalon H. Dismukes,Raymond L. Dudley,Ren A. Wiscons,Kihong Lee,Jessica Yu,Sara Shabani,Allen Scheie,Kenji Watanabe,Takashi Taniguchi,Di Xiao,Abhay N. Pasupathy,Colin Nuckolls,Xiaoyang Zhu,Cory R. Dean,Xavier Roy###
(76191, 76193)
 Here we report the simultaneous electrostaticand magnetic control of electronic transport in atomically-thin CrSBr, anA-type antiferromagnetic semiconductor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CrSBr
###Hidden low-temperature magnetic order revealed through magnetotransport in monolayer CrSBr|Evan J. Telford,Avalon H. Dismukes,Raymond L. Dudley,Ren A. Wiscons,Kihong Lee,Jessica Yu,Sara Shabani,Allen Scheie,Kenji Watanabe,Takashi Taniguchi,Di Xiao,Abhay N. Pasupathy,Colin Nuckolls,Xiaoyang Zhu,Cory R. Dean,Xavier Roy###
(76270, 76272)
Conversely, magnetoresistance of the ferromagnetic monolayer CrSBr vanishesbelow the Curie temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaBi
###First-principles study on the electron-phonon coupling and magnetoresistance of LaBi under pressure|Jian-Feng Zhang,Peng-Jie Guo,Miao Gao,Kai Liu,Zhong-Yi Lu###
(76421, 76422)
First-principles study on the electron-phonon coupling and magnetoresistance of LaBi under pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 0, 'to', 3],[128.0, 18, 'GPa', 3]

LaBi
###First-principles study on the electron-phonon coupling and magnetoresistance of LaBi under pressure|Jian-Feng Zhang,Peng-Jie Guo,Miao Gao,Kai Liu,Zhong-Yi Lu###
(76445, 76446)
 The extremely large magnetoresistance (XMR) material LaBi was reported tobecome superconducting under pressure accompanying with suppressedmagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 0, 'to', 2],[104.0, 18, 'GPa', 2]

LaBi
###First-principles study on the electron-phonon coupling and magnetoresistance of LaBi under pressure|Jian-Feng Zhang,Peng-Jie Guo,Miao Gao,Kai Liu,Zhong-Yi Lu###
(76537, 76538)
 By usingfirst-principles electronic structure calculations in combination with asemiclassical model, we have studied the electron-phonon coupling andmagnetoresistance of LaBi in the pressure range from 0 to 18 GPa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 0, 'to', 0],[12.0, 18, 'GPa', 0]

LaBi
###First-principles study on the electron-phonon coupling and magnetoresistance of LaBi under pressure|Jian-Feng Zhang,Peng-Jie Guo,Miao Gao,Kai Liu,Zhong-Yi Lu###
(76562, 76563)
 Ourcalculations show that LaBi undergoes a structural phase transition from aface-centered cubic lattice to a primitive tetragonal lattice at sim7 G<missing VAR>Pa,verifying previous experimental results.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 0, 'to', 1],[12.0, 18, 'GPa', 1]

Pa
###First-principles study on the electron-phonon coupling and magnetoresistance of LaBi under pressure|Jian-Feng Zhang,Peng-Jie Guo,Miao Gao,Kai Liu,Zhong-Yi Lu###
(76604, 76604)
 Ourcalculations show that LaBi undergoes a structural phase transition from aface-centered cubic lattice to a primitive tetragonal lattice at sim7 G<missing VAR>Pa,verifying previous experimental results.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 0, 'to', 1],[54.0, 18, 'GPa', 1]

LaBi
###First-principles study on the electron-phonon coupling and magnetoresistance of LaBi under pressure|Jian-Feng Zhang,Peng-Jie Guo,Miao Gao,Kai Liu,Zhong-Yi Lu###
(76620, 76621)
 Meanwhile, LaBi remains topologicallynontrivial across the structural transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 0, 'to', 2],[70.0, 18, 'GPa', 2]

LaBi
###First-principles study on the electron-phonon coupling and magnetoresistance of LaBi under pressure|Jian-Feng Zhang,Peng-Jie Guo,Miao Gao,Kai Liu,Zhong-Yi Lu###
(76692, 76693)
 Under all pressures that we havestudied, the phonon-mediated mechanism based on the weak electron-phononcoupling cannot account for the observed superconductivity in LaBi, and thecalculated magnetoresistance for LaBi does not show a suppression.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 0, 'to', 3],[142.0, 18, 'GPa', 3]

LaBi
###First-principles study on the electron-phonon coupling and magnetoresistance of LaBi under pressure|Jian-Feng Zhang,Peng-Jie Guo,Miao Gao,Kai Liu,Zhong-Yi Lu###
(76707, 76708)
 Under all pressures that we havestudied, the phonon-mediated mechanism based on the weak electron-phononcoupling cannot account for the observed superconductivity in LaBi, and thecalculated magnetoresistance for LaBi does not show a suppression.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 0, 'to', 3],[157.0, 18, 'GPa', 3]

Bi
###First-principles study on the electron-phonon coupling and magnetoresistance of LaBi under pressure|Jian-Feng Zhang,Peng-Jie Guo,Miao Gao,Kai Liu,Zhong-Yi Lu###
(76753, 76753)
 The distinctdifference between our calculations and experimental observations suggestseither the existence of extra Bi impurities in the real LaBi compound or thepossibility of other unknown mechanism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[204.0, 0, 'to', 4],[203.0, 18, 'GPa', 4]

LaBi
###First-principles study on the electron-phonon coupling and magnetoresistance of LaBi under pressure|Jian-Feng Zhang,Peng-Jie Guo,Miao Gao,Kai Liu,Zhong-Yi Lu###
(76763, 76764)
 The distinctdifference between our calculations and experimental observations suggestseither the existence of extra Bi impurities in the real LaBi compound or thepossibility of other unknown mechanism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[214.0, 0, 'to', 4],[213.0, 18, 'GPa', 4]

V1
###Large Magnetoresistance and Weak Antilocalization in V1-delta Sb2 Single Crystal|Yong Zhang,Xinliang Huang,Wenshuai Gao,Xiangde Zhu,Li Pi###
(76804, 76805)
Large Magnetoresistance and Weak Antilocalization in V1-delta Sb2 Single Crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 477, '%', 3],[152.0, 12, 'T', 3],[158.0, 1.8, 'K', 3],[288.0, 3, 'D', 5]

Sb2
###Large Magnetoresistance and Weak Antilocalization in V1-delta Sb2 Single Crystal|Yong Zhang,Xinliang Huang,Wenshuai Gao,Xiangde Zhu,Li Pi###
(76809, 76810)
Large Magnetoresistance and Weak Antilocalization in V1-delta Sb2 Single Crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 477, '%', 3],[147.0, 12, 'T', 3],[153.0, 1.8, 'K', 3],[283.0, 3, 'D', 5]

In
###Large Magnetoresistance and Weak Antilocalization in V1-delta Sb2 Single Crystal|Yong Zhang,Xinliang Huang,Wenshuai Gao,Xiangde Zhu,Li Pi###
(76876, 76876)
 Inthis paper, we have successfully grown the high-quality V1-deltaSb2 singlecrystals by Sb flux method and investigated their electronic transportproperties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 477, '%', 1],[81.0, 12, 'T', 1],[87.0, 1.8, 'K', 1],[217.0, 3, 'D', 3]

V1
###Large Magnetoresistance and Weak Antilocalization in V1-delta Sb2 Single Crystal|Yong Zhang,Xinliang Huang,Wenshuai Gao,Xiangde Zhu,Li Pi###
(76898, 76899)
 Inthis paper, we have successfully grown the high-quality V1-deltaSb2 singlecrystals by Sb flux method and investigated their electronic transportproperties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 477, '%', 1],[58.0, 12, 'T', 1],[64.0, 1.8, 'K', 1],[194.0, 3, 'D', 3]

Sb2
###Large Magnetoresistance and Weak Antilocalization in V1-delta Sb2 Single Crystal|Yong Zhang,Xinliang Huang,Wenshuai Gao,Xiangde Zhu,Li Pi###
(76902, 76903)
 Inthis paper, we have successfully grown the high-quality V1-deltaSb2 singlecrystals by Sb flux method and investigated their electronic transportproperties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 477, '%', 1],[54.0, 12, 'T', 1],[60.0, 1.8, 'K', 1],[190.0, 3, 'D', 3]

Sb
###Large Magnetoresistance and Weak Antilocalization in V1-delta Sb2 Single Crystal|Yong Zhang,Xinliang Huang,Wenshuai Gao,Xiangde Zhu,Li Pi###
(76912, 76912)
 Inthis paper, we have successfully grown the high-quality V1-deltaSb2 singlecrystals by Sb flux method and investigated their electronic transportproperties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 477, '%', 1],[45.0, 12, 'T', 1],[51.0, 1.8, 'K', 1],[181.0, 3, 'D', 3]

W
###Large Magnetoresistance and Weak Antilocalization in V1-delta Sb2 Single Crystal|Yong Zhang,Xinliang Huang,Wenshuai Gao,Xiangde Zhu,Li Pi###
(77036, 77036)
 Notably, themagnetoresistance showed a cusp-like feature at the low magnetic fields andsuch feature weakened gradually as the temperature increased, which indicatedthe presence of weak antilocalization effect (WAL).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 477, '%', 1],[79.0, 12, 'T', 1],[73.0, 1.8, 'K', 1],[57.0, 3, 'D', 1]

W
###Large Magnetoresistance and Weak Antilocalization in V1-delta Sb2 Single Crystal|Yong Zhang,Xinliang Huang,Wenshuai Gao,Xiangde Zhu,Li Pi###
(77084, 77084)
 The angle-dependentmagnetoconductance and the ultra-large prefactor alpha extracted from theHikami-Larkin-Nagaoka equation revealed that the WAL<missing VAR> effect is a 3D bulk effectoriginated from the three-dimensional bulk spin-orbital coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 477, '%', 2],[127.0, 12, 'T', 2],[121.0, 1.8, 'K', 2],[9.0, 3, 'D', 0]

KTaO3
###Large positive magnetoresistance in photocarrier doping potassium tantalites in the extreme quantum limit|Ruishu Yang,Dingbang Wang,Yang Zhao,Shuanhu Wang,Kexin Jin###
(77172, 77175)
 We report on a high-field magnetotransport study of KTaO3 single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 360, 'nm', 2],[106.0, 10, 'K', 3],[122.0, 12, 'T', 3],[157.0, 433, '%', 3]

KTaO3
###Large positive magnetoresistance in photocarrier doping potassium tantalites in the extreme quantum limit|Ruishu Yang,Dingbang Wang,Yang Zhao,Shuanhu Wang,Kexin Jin###
(77310, 77313)
 When cooled down to 10 K andsubjected to a magnetic field of 12 T, the value of magnetoresistance of KTaO3(100) is increased by as much as 433%.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 360, 'nm', 1],[29.0, 10, 'K', 0],[13.0, 12, 'T', 0],[19.0, 433, '%', 0]

In
###Large positive magnetoresistance in photocarrier doping potassium tantalites in the extreme quantum limit|Ruishu Yang,Dingbang Wang,Yang Zhao,Shuanhu Wang,Kexin Jin###
(77374, 77374)
 In this state, aquantum magnetoresistance is produced.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 360, 'nm', 3],[93.0, 10, 'K', 2],[77.0, 12, 'T', 2],[42.0, 433, '%', 2]

HgTe
###Bilinear magnetoresistance in HgTe topological insulator: opposite signs at opposite interfaces demonstrated by gate control|Yu Fu,Jing Li,Jules Papin,Paul Noel,Salvatore Teresi,Maxen Cosset-Cheneau,Cecile Grezes,Thomas Guillet,Candice Thomas,Yann-Michel Niquet,Philippe Ballet,Tristan Meunier,Jean-Philippe Attane,Albert Fert,Laurent Vila###
(77462, 77463)
Bilinear magnetoresistance in HgTe topological insulator opposite signs at opposite interfaces demonstrated by gate control.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[261.0, 1, 'T', 5]

I
###Bilinear magnetoresistance in HgTe topological insulator: opposite signs at opposite interfaces demonstrated by gate control|Yu Fu,Jing Li,Jules Papin,Paul Noel,Salvatore Teresi,Maxen Cosset-Cheneau,Cecile Grezes,Thomas Guillet,Candice Thomas,Yann-Michel Niquet,Philippe Ballet,Tristan Meunier,Jean-Philippe Attane,Albert Fert,Laurent Vila###
(77504, 77504)
 Spin-orbit effects appearing in topological insulators (T<missing VAR>I) and at Rashbainterfaces are currently revolutionizing how we can manipulate spins and haveled to several newly discovered effects, from spin-charge interconversion andspin-orbit torques to novel magnetoresistance phenomena.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[220.0, 1, 'T', 4]

In
###Bilinear magnetoresistance in HgTe topological insulator: opposite signs at opposite interfaces demonstrated by gate control|Yu Fu,Jing Li,Jules Papin,Paul Noel,Salvatore Teresi,Maxen Cosset-Cheneau,Cecile Grezes,Thomas Guillet,Candice Thomas,Yann-Michel Niquet,Philippe Ballet,Tristan Meunier,Jean-Philippe Attane,Albert Fert,Laurent Vila###
(77576, 77576)
 In particular, apuzzling magnetoresistance has been evidenced, bilinear in electric andmagnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 1, 'T', 3]

B
###Bilinear magnetoresistance in HgTe topological insulator: opposite signs at opposite interfaces demonstrated by gate control|Yu Fu,Jing Li,Jules Papin,Paul Noel,Salvatore Teresi,Maxen Cosset-Cheneau,Cecile Grezes,Thomas Guillet,Candice Thomas,Yann-Michel Niquet,Philippe Ballet,Tristan Meunier,Jean-Philippe Attane,Albert Fert,Laurent Vila###
(77628, 77628)
 Here, we report the observation of bilinear magnetoresistance(BMR) in strained HgTe, a prototypical T<missing VAR>I.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 1, 'T', 2]

HgTe
###Bilinear magnetoresistance in HgTe topological insulator: opposite signs at opposite interfaces demonstrated by gate control|Yu Fu,Jing Li,Jules Papin,Paul Noel,Salvatore Teresi,Maxen Cosset-Cheneau,Cecile Grezes,Thomas Guillet,Candice Thomas,Yann-Michel Niquet,Philippe Ballet,Tristan Meunier,Jean-Philippe Attane,Albert Fert,Laurent Vila###
(77637, 77638)
 Here, we report the observation of bilinear magnetoresistance(BMR) in strained HgTe, a prototypical T<missing VAR>I.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 1, 'T', 2]

I
###Bilinear magnetoresistance in HgTe topological insulator: opposite signs at opposite interfaces demonstrated by gate control|Yu Fu,Jing Li,Jules Papin,Paul Noel,Salvatore Teresi,Maxen Cosset-Cheneau,Cecile Grezes,Thomas Guillet,Candice Thomas,Yann-Michel Niquet,Philippe Ballet,Tristan Meunier,Jean-Philippe Attane,Albert Fert,Laurent Vila###
(77646, 77646)
 Here, we report the observation of bilinear magnetoresistance(BMR) in strained HgTe, a prototypical T<missing VAR>I.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 1, 'T', 2]

B
###Bilinear magnetoresistance in HgTe topological insulator: opposite signs at opposite interfaces demonstrated by gate control|Yu Fu,Jing Li,Jules Papin,Paul Noel,Salvatore Teresi,Maxen Cosset-Cheneau,Cecile Grezes,Thomas Guillet,Candice Thomas,Yann-Michel Niquet,Philippe Ballet,Tristan Meunier,Jean-Philippe Attane,Albert Fert,Laurent Vila###
(77670, 77670)
 We show that both the amplitude andsign of this BMR can be tuned by controlling, with an electric gate, therelative proportions of the opposite contributions of opposite surfaces.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 1, 'T', 1]

At
###Bilinear magnetoresistance in HgTe topological insulator: opposite signs at opposite interfaces demonstrated by gate control|Yu Fu,Jing Li,Jules Papin,Paul Noel,Salvatore Teresi,Maxen Cosset-Cheneau,Cecile Grezes,Thomas Guillet,Candice Thomas,Yann-Michel Niquet,Philippe Ballet,Tristan Meunier,Jean-Philippe Attane,Albert Fert,Laurent Vila###
(77716, 77716)
 Atmagnetic fields of 1 T, the magnetoresistance is of the order of 1 % and has alarger figure of merit than previously measured T<missing VAR>Is.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 1, 'T', 0]

I
###Bilinear magnetoresistance in HgTe topological insulator: opposite signs at opposite interfaces demonstrated by gate control|Yu Fu,Jing Li,Jules Papin,Paul Noel,Salvatore Teresi,Maxen Cosset-Cheneau,Cecile Grezes,Thomas Guillet,Candice Thomas,Yann-Michel Niquet,Philippe Ballet,Tristan Meunier,Jean-Philippe Attane,Albert Fert,Laurent Vila###
(77809, 77809)
 This phenomenon,unique to T<missing VAR>I, offers novel opportunities to tune their electrical response forspintronics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 1, 'T', 2]

TaFe1.25Te3
###Anisotropic magnetotransport in the layered antiferromagnet TaFe$_{1.25}$Te$_3$|Rajeswari Roy Chowdhury,Samik DuttaGupta,Chandan Patra,Anshu Kataria,Shunsuke Fukami,Ravi Prakash Singh###
(77854, 77858)
Anisotropic magnetotransport in the layered antiferromagnet TaFe1.25Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23809523809523808,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.19047619047619047,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Anisotropic magnetotransport in the layered antiferromagnet TaFe$_{1.25}$Te$_3$|Rajeswari Roy Chowdhury,Samik DuttaGupta,Chandan Patra,Anshu Kataria,Shunsuke Fukami,Ravi Prakash Singh###
(77923, 77923)
 Layeredantiferromagnets (AFMs) exhibiting interesting magnetic structures, can serveas an attractive starting point to establish novel functionalities down to thetwo-dimensional limit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Anisotropic magnetotransport in the layered antiferromagnet TaFe$_{1.25}$Te$_3$|Rajeswari Roy Chowdhury,Samik DuttaGupta,Chandan Patra,Anshu Kataria,Shunsuke Fukami,Ravi Prakash Singh###
(77973, 77973)
 In this work, we explore the magnetoresistive propertiesof the spin-ladder AFM<missing VAR> TaFe1.25Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Anisotropic magnetotransport in the layered antiferromagnet TaFe$_{1.25}$Te$_3$|Rajeswari Roy Chowdhury,Samik DuttaGupta,Chandan Patra,Anshu Kataria,Shunsuke Fukami,Ravi Prakash Singh###
(78000, 78000)
 In this work, we explore the magnetoresistive propertiesof the spin-ladder AFM<missing VAR> TaFe1.25Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TaFe1.25Te3
###Anisotropic magnetotransport in the layered antiferromagnet TaFe$_{1.25}$Te$_3$|Rajeswari Roy Chowdhury,Samik DuttaGupta,Chandan Patra,Anshu Kataria,Shunsuke Fukami,Ravi Prakash Singh###
(78003, 78007)
 In this work, we explore the magnetoresistive propertiesof the spin-ladder AFM<missing VAR> TaFe1.25Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23809523809523808,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.19047619047619047,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Anisotropic magnetotransport in the layered antiferromagnet TaFe$_{1.25}$Te$_3$|Rajeswari Roy Chowdhury,Samik DuttaGupta,Chandan Patra,Anshu Kataria,Shunsuke Fukami,Ravi Prakash Singh###
(78046, 78046)
 Magnetization studies reveal ananisotropic magnetic behavior resulting in the stabilization of a spin-flopconfiguration for H perp (10-1) plane (i.e.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Anisotropic magnetotransport in the layered antiferromagnet TaFe$_{1.25}$Te$_3$|Rajeswari Roy Chowdhury,Samik DuttaGupta,Chandan Patra,Anshu Kataria,Shunsuke Fukami,Ravi Prakash Singh###
(78115, 78115)
 A significant anisotropic enhancement of magnetoresistancewhen H perp (10-1) plane compared to H parallel (10-1) directions hasbeen observed.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Anisotropic magnetotransport in the layered antiferromagnet TaFe$_{1.25}$Te$_3$|Rajeswari Roy Chowdhury,Samik DuttaGupta,Chandan Patra,Anshu Kataria,Shunsuke Fukami,Ravi Prakash Singh###
(78131, 78131)
 A significant anisotropic enhancement of magnetoresistancewhen H perp (10-1) plane compared to H parallel (10-1) directions hasbeen observed.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Anisotropic magnetotransport in the layered antiferromagnet TaFe$_{1.25}$Te$_3$|Rajeswari Roy Chowdhury,Samik DuttaGupta,Chandan Patra,Anshu Kataria,Shunsuke Fukami,Ravi Prakash Singh###
(78181, 78181)
 The present results deepen our understanding of themagnetoresistive properties of low-dimensional layered AFMs, and point towardsthe possibility of utilizing these novel material systems for antiferromagneticspintronics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###The out-of-plane magnetoresistance in a Van der Waals thin film of WTe2|Y. S. Liu,H. Xiao,C. Zhang,C. W. Zhang,Y. G. Shi,T. Hu,C. M. Schneider###
(78250, 78252)
The out-of-plane magnetoresistance in a Van der Waals thin film of WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###The out-of-plane magnetoresistance in a Van der Waals thin film of WTe2|Y. S. Liu,H. Xiao,C. Zhang,C. W. Zhang,Y. G. Shi,T. Hu,C. M. Schneider###
(78286, 78288)
 We report the magneto-transport measurements of thin film devices of thetopological Weyl semimetal WTe2 with the applied current along and vertical tothe in-plane directions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###The out-of-plane magnetoresistance in a Van der Waals thin film of WTe2|Y. S. Liu,H. Xiao,C. Zhang,C. W. Zhang,Y. G. Shi,T. Hu,C. M. Schneider###
(78341, 78343)
 The device is composed of a Van der Waals thin film ofWTe2 sandwiched between top and bottom Au electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Au
###The out-of-plane magnetoresistance in a Van der Waals thin film of WTe2|Y. S. Liu,H. Xiao,C. Zhang,C. W. Zhang,Y. G. Shi,T. Hu,C. M. Schneider###
(78355, 78355)
 The device is composed of a Van der Waals thin film ofWTe2 sandwiched between top and bottom Au electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###The out-of-plane magnetoresistance in a Van der Waals thin film of WTe2|Y. S. Liu,H. Xiao,C. Zhang,C. W. Zhang,Y. G. Shi,T. Hu,C. M. Schneider###
(78359, 78359)
At low temperatures, wefound a large unsaturated in-plane magnetoresistance and a saturatedout-of-plane magnetoresistance when the external magnetic fields are appliedperpendicular to the plane.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###The out-of-plane magnetoresistance in a Van der Waals thin film of WTe2|Y. S. Liu,H. Xiao,C. Zhang,C. W. Zhang,Y. G. Shi,T. Hu,C. M. Schneider###
(78511, 78513)
Our work provides newinsight into the origin of the unsaturated magnetoresistance in WTe2 and mayinspire non-planar engineering to reach higher integration in spintronics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt3Sn
###Robust negative longitudinal magnetoresistance and spin-orbit torque in sputtered Pt3Sn topological semimetal|Delin Zhang,Wei Jiang,Hwanhui Yun,Onri Jay Benally,Thomas Peterson,Zach Cresswell,Yihong Fan,Yang Lv,Guichuan Yu,Javier Garcia Barriocanal,Przemyslaw Swatek,K. Andre Mkhoyan,Tony Low,Jian-Ping Wang###
(78569, 78571)
Robust negative longitudinal magnetoresistance and spin-orbit torque in sputtered Pt3Sn topological semimetal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt3Sn
###Robust negative longitudinal magnetoresistance and spin-orbit torque in sputtered Pt3Sn topological semimetal|Delin Zhang,Wei Jiang,Hwanhui Yun,Onri Jay Benally,Thomas Peterson,Zach Cresswell,Yihong Fan,Yang Lv,Guichuan Yu,Javier Garcia Barriocanal,Przemyslaw Swatek,K. Andre Mkhoyan,Tony Low,Jian-Ping Wang###
(78665, 78667)
 Here, we fabricatehighly-ordered metallic Pt3Sn and Pt3SnxFe1-x thin films via sputteringtechnology.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt3
###Robust negative longitudinal magnetoresistance and spin-orbit torque in sputtered Pt3Sn topological semimetal|Delin Zhang,Wei Jiang,Hwanhui Yun,Onri Jay Benally,Thomas Peterson,Zach Cresswell,Yihong Fan,Yang Lv,Guichuan Yu,Javier Garcia Barriocanal,Przemyslaw Swatek,K. Andre Mkhoyan,Tony Low,Jian-Ping Wang###
(78671, 78672)
 Here, we fabricatehighly-ordered metallic Pt3Sn and Pt3SnxFe1-x thin films via sputteringtechnology.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe1-x
###Robust negative longitudinal magnetoresistance and spin-orbit torque in sputtered Pt3Sn topological semimetal|Delin Zhang,Wei Jiang,Hwanhui Yun,Onri Jay Benally,Thomas Peterson,Zach Cresswell,Yihong Fan,Yang Lv,Guichuan Yu,Javier Garcia Barriocanal,Przemyslaw Swatek,K. Andre Mkhoyan,Tony Low,Jian-Ping Wang###
(78674, 78677)
 Here, we fabricatehighly-ordered metallic Pt3Sn and Pt3SnxFe1-x thin films via sputteringtechnology.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

Pt3Sn
###Robust negative longitudinal magnetoresistance and spin-orbit torque in sputtered Pt3Sn topological semimetal|Delin Zhang,Wei Jiang,Hwanhui Yun,Onri Jay Benally,Thomas Peterson,Zach Cresswell,Yihong Fan,Yang Lv,Guichuan Yu,Javier Garcia Barriocanal,Przemyslaw Swatek,K. Andre Mkhoyan,Tony Low,Jian-Ping Wang###
(78743, 78745)
 Systematic angular dependence (both in-plane and out-of-plane)study of magnetoresistance presents surprisingly robust quadratic and linearnegative longitudinal magnetoresistance features for Pt3Sn and Pt3SnxFe1-x,respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt3
###Robust negative longitudinal magnetoresistance and spin-orbit torque in sputtered Pt3Sn topological semimetal|Delin Zhang,Wei Jiang,Hwanhui Yun,Onri Jay Benally,Thomas Peterson,Zach Cresswell,Yihong Fan,Yang Lv,Guichuan Yu,Javier Garcia Barriocanal,Przemyslaw Swatek,K. Andre Mkhoyan,Tony Low,Jian-Ping Wang###
(78749, 78750)
 Systematic angular dependence (both in-plane and out-of-plane)study of magnetoresistance presents surprisingly robust quadratic and linearnegative longitudinal magnetoresistance features for Pt3Sn and Pt3SnxFe1-x,respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe1-x
###Robust negative longitudinal magnetoresistance and spin-orbit torque in sputtered Pt3Sn topological semimetal|Delin Zhang,Wei Jiang,Hwanhui Yun,Onri Jay Benally,Thomas Peterson,Zach Cresswell,Yihong Fan,Yang Lv,Guichuan Yu,Javier Garcia Barriocanal,Przemyslaw Swatek,K. Andre Mkhoyan,Tony Low,Jian-Ping Wang###
(78752, 78755)
 Systematic angular dependence (both in-plane and out-of-plane)study of magnetoresistance presents surprisingly robust quadratic and linearnegative longitudinal magnetoresistance features for Pt3Sn and Pt3SnxFe1-x,respectively.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

II
###Robust negative longitudinal magnetoresistance and spin-orbit torque in sputtered Pt3Sn topological semimetal|Delin Zhang,Wei Jiang,Hwanhui Yun,Onri Jay Benally,Thomas Peterson,Zach Cresswell,Yihong Fan,Yang Lv,Guichuan Yu,Javier Garcia Barriocanal,Przemyslaw Swatek,K. Andre Mkhoyan,Tony Low,Jian-Ping Wang###
(78783, 78784)
 We attribute the anomalous negative longitudinalmagnetoresistance to the type-II Dirac semimetal phase (pristine Pt3Sn) and/orthe formation of tunable Weyl semimetal phases through symmetry breakingprocesses, such as magnetic-atom doping, as confirmed by first-principlescalculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sn
###Robust negative longitudinal magnetoresistance and spin-orbit torque in sputtered Pt3Sn topological semimetal|Delin Zhang,Wei Jiang,Hwanhui Yun,Onri Jay Benally,Thomas Peterson,Zach Cresswell,Yihong Fan,Yang Lv,Guichuan Yu,Javier Garcia Barriocanal,Przemyslaw Swatek,K. Andre Mkhoyan,Tony Low,Jian-Ping Wang###
(78797, 78797)
 We attribute the anomalous negative longitudinalmagnetoresistance to the type-II Dirac semimetal phase (pristine Pt3Sn) and/orthe formation of tunable Weyl semimetal phases through symmetry breakingprocesses, such as magnetic-atom doping, as confirmed by first-principlescalculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt3Sn
###Robust negative longitudinal magnetoresistance and spin-orbit torque in sputtered Pt3Sn topological semimetal|Delin Zhang,Wei Jiang,Hwanhui Yun,Onri Jay Benally,Thomas Peterson,Zach Cresswell,Yihong Fan,Yang Lv,Guichuan Yu,Javier Garcia Barriocanal,Przemyslaw Swatek,K. Andre Mkhoyan,Tony Low,Jian-Ping Wang###
(78857, 78859)
 Furthermore, Pt3Sn and Pt3SnxFe1-x show the promising performancefor facilitating the development of advanced spin-orbit torque devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt3
###Robust negative longitudinal magnetoresistance and spin-orbit torque in sputtered Pt3Sn topological semimetal|Delin Zhang,Wei Jiang,Hwanhui Yun,Onri Jay Benally,Thomas Peterson,Zach Cresswell,Yihong Fan,Yang Lv,Guichuan Yu,Javier Garcia Barriocanal,Przemyslaw Swatek,K. Andre Mkhoyan,Tony Low,Jian-Ping Wang###
(78863, 78864)
 Furthermore, Pt3Sn and Pt3SnxFe1-x show the promising performancefor facilitating the development of advanced spin-orbit torque devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe1-x
###Robust negative longitudinal magnetoresistance and spin-orbit torque in sputtered Pt3Sn topological semimetal|Delin Zhang,Wei Jiang,Hwanhui Yun,Onri Jay Benally,Thomas Peterson,Zach Cresswell,Yihong Fan,Yang Lv,Guichuan Yu,Javier Garcia Barriocanal,Przemyslaw Swatek,K. Andre Mkhoyan,Tony Low,Jian-Ping Wang###
(78866, 78869)
 Furthermore, Pt3Sn and Pt3SnxFe1-x show the promising performancefor facilitating the development of advanced spin-orbit torque devices.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

At
###Paramagnons, weak disorder and positive giant magnetoresistance|George Kastrinakis###
(78977, 78977)
 At low temperature and for finite spin scattering in a weakly disorderedmetal, for a certain value, predicted from our theory, of thematerial-dependent paramagnon interaction, the total conductivity becomeshighly sensitive to the orbital effects of a finite magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Paramagnons, weak disorder and positive giant magnetoresistance|George Kastrinakis###
(79069, 79069)
 As aconsequence, positive giant magnetoresistance and giant corrections to the Hallcoefficient arise.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magnetoresistance of Two-Dimensional Fermions in a Random Magnetic Field|D. V. Khveshchenko###
(79218, 79218)
 Inthe regime relevant for the problem of the half filled Landau level theperturbative Born approximation fails and we develop a new method of solvingthe Boltzmann equation beyond the relaxation time approximation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magnetoresistance of Two-Dimensional Fermions in a Random Magnetic Field|D. V. Khveshchenko###
(79290, 79290)
 In absence ofinteractions, electron density modulations, in-plane fields, and Fermi surfaceanisotropy we obtain a quadratic negative magnetoresistance in the weak fieldlimit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbSe3
###Collective charge density wave motion through an ensemble of Aharonov-Bohm rings|M. I. Visscher,B. Rejaei###
(79899, 79901)
 This isconsistent with recent experiments on NbSe3 in presence of columnar defects[Phys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 78, ',', 3]

UCu3.5Pd1.5
###Weak magnetoresistance of disordered heavy fermion systems|A. Chattopadhyay,M. Jarrell,H. R. Krishnamurthy,H. K. Ng,J. Sarrao,Z. Fisk###
(79968, 79972)
 We compare the magnetoresistance of UCu3.5Pd1.5 with calculationsdone within the disordered heavy fermion framework of Miranda et al.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Weak magnetoresistance of disordered heavy fermion systems|A. Chattopadhyay,M. Jarrell,H. R. Krishnamurthy,H. K. Ng,J. Sarrao,Z. Fisk###
(80067, 80067)
 In contrast, thermodynamic quantitieshave a strong field dependence.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Ballistic electron transport through magnetic domain walls|Jeroen B. A. N. van Hoof,Kees M. Schep,Arne Brataas,Gerrit E. W. Bauer,Paul J. Kelly###
(80389, 80389)
 Electron transport limited by the rotating exchange-potential of domain wallsis calculated in the ballistic limit for the itinerant ferromagnets Fe, Co, andNi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Ballistic electron transport through magnetic domain walls|Jeroen B. A. N. van Hoof,Kees M. Schep,Arne Brataas,Gerrit E. W. Bauer,Paul J. Kelly###
(80392, 80392)
 Electron transport limited by the rotating exchange-potential of domain wallsis calculated in the ballistic limit for the itinerant ferromagnets Fe, Co, andNi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Ballistic electron transport through magnetic domain walls|Jeroen B. A. N. van Hoof,Kees M. Schep,Arne Brataas,Gerrit E. W. Bauer,Paul J. Kelly###
(80398, 80398)
 Electron transport limited by the rotating exchange-potential of domain wallsis calculated in the ballistic limit for the itinerant ferromagnets Fe, Co, andNi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(B)
###Strong magnetoresistance induced by long-range disorder|A. D. Mirlin,J. Wilke,F. Evers,D. G. Polyakov,P. Woelfle###
(80755, 80757)
 We calculate the semiclassical magnetoresistivity rhoxx(B) ofnon-interacting fermions in two dimensions moving in a weak and smoothlyvarying random potential or random magnetic field.
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(B)
###Strong magnetoresistance induced by long-range disorder|A. D. Mirlin,J. Wilke,F. Evers,D. G. Polyakov,P. Woelfle###
(80882, 80884)
 The effect is especiallypronounced in the case of a random magnetic field where rhoxx(B) becomesparametrically much larger than its B0 value.
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B0
###Strong magnetoresistance induced by long-range disorder|A. D. Mirlin,J. Wilke,F. Evers,D. G. Polyakov,P. Woelfle###
(80899, 80900)
 The effect is especiallypronounced in the case of a random magnetic field where rhoxx(B) becomesparametrically much larger than its B0 value.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La1.2Sr1.8Mn2O7
###Charge melting and polaron collapse in $La_{1.2}Sr_{1.8}Mn_{2}O_{7}$|L. Vasiliu-Doloc,S. Rosenkranz,R. Osborn,S. K. Sinha,J. W. Lynn,J. Mesot,O. H. Seeck,G. Preosti,A. J. Fedro,J. F. Mitchell###
(80925, 80932)
Charge melting and polaron collapse in La1.2Sr1.8Mn2O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.09999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Charge melting and polaron collapse in $La_{1.2}Sr_{1.8}Mn_{2}O_{7}$|L. Vasiliu-Doloc,S. Rosenkranz,R. Osborn,S. K. Sinha,J. W. Lynn,J. Mesot,O. H. Seeck,G. Preosti,A. J. Fedro,J. F. Mitchell###
(81056, 81056)
 The melting of thecharge ordering as we cool through T<missing VAR>C occurs with the collapse of thequasi-static polaron scattering, and provides important new insights into therelation of polarons to colossal magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Large Magnetoresistance Ratio in Ferromagnetic Single-Electron Transistors in the Strong Tunneling Regime|X. H. Wang,A. Brataas###
(81258, 81258)
 In theopposite limit, when the thermal energy is larger than the charging energy, themagnetoresistance ratio is only slightly enhanced.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Magnetoresistance of a two-dimensional electron gas in a parallel magnetic field|V. T. Dolgopolov,A. Gold###
(81497, 81497)
 The theory is in qualitativeagreement with recent experimental results found for Si inversion layers and Siquantum wells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Magnetoresistance of a two-dimensional electron gas in a parallel magnetic field|V. T. Dolgopolov,A. Gold###
(81505, 81505)
 The theory is in qualitativeagreement with recent experimental results found for Si inversion layers and Siquantum wells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

AuFe
###Low Temperature Anomaly in Mesoscopic Kondo Wires|Pritiraj Mohanty,Richard A. Webb###
(81565, 81566)
 We report the observation of an anomalous magnetoresistance in extremelydilute quasi-one-dimensional AuFe wires at low temperatures, along with ahysteretic background at low fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ag/Fe/Ag
###Giant Magnetoresistance at the Interface of Iron Thin Films|J. Balogh,L. F. Kiss,A. Halbritter,I. Kézsmárki,G. Mihály###
(81725, 81729)
 Ag/Fe/Ag and Cr/Fe/Cr trilayers with a single 25 nm thick ferromagneticlayer exhibit giant magnetoresistance (GMR) type behavior.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Cr/Fe/Cr
###Giant Magnetoresistance at the Interface of Iron Thin Films|J. Balogh,L. F. Kiss,A. Halbritter,I. Kézsmárki,G. Mihály###
(81733, 81737)
 Ag/Fe/Ag and Cr/Fe/Cr trilayers with a single 25 nm thick ferromagneticlayer exhibit giant magnetoresistance (GMR) type behavior.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

B12
###Giant Magnetoresistance at the Interface of Iron Thin Films|J. Balogh,L. F. Kiss,A. Halbritter,I. Kézsmárki,G. Mihály###
(81815, 81816)
 The resistancedecreases for parallel and transversal magnetic field alignements with aLangevin-type magnetic field dependence up to B12 T<missing VAR>.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/Ag
###Giant Magnetoresistance at the Interface of Iron Thin Films|J. Balogh,L. F. Kiss,A. Halbritter,I. Kézsmárki,G. Mihály###
(81845, 81847)
 Results on Fe/Ag multilayers arealso interpreted in terms of a granular interface magnetoresistance.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

B
###Electronic Structure of Novel Cation-Radical Salts in High Magnetic Fields|J. S. Brooks,L. Balicas,K. Storr,B. H. Ward,S. Uji,T. Terashima,C. Terakura,J. A. Schlueter,R. W. Winter,J. Mohtasham,G. L. Gard,G. C. Papavassiliou,M. Tokumoto###
(81940, 81940)
 Two organic conducting materials, where unusual aspects of their compositionplay important roles, are explored beta-(BEDT-TTF)2SF5X<missing VAR>SO3 which exhibitssuperconductivity, or a metal-insulator transition (for X<missing VAR>CH2CF2 or CHFrespectively), and tau-(P-S, S -DMEDT-TTF)2 (AuBr2) (AuBr2)y<missing VAR> which exhibits alarge, hysteretic, negative magnetoresistance.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Electronic Structure of Novel Cation-Radical Salts in High Magnetic Fields|J. S. Brooks,L. Balicas,K. Storr,B. H. Ward,S. Uji,T. Terashima,C. Terakura,J. A. Schlueter,R. W. Winter,J. Mohtasham,G. L. Gard,G. C. Papavassiliou,M. Tokumoto###
(81947, 81947)
 Two organic conducting materials, where unusual aspects of their compositionplay important roles, are explored beta-(BEDT-TTF)2SF5X<missing VAR>SO3 which exhibitssuperconductivity, or a metal-insulator transition (for X<missing VAR>CH2CF2 or CHFrespectively), and tau-(P-S, S -DMEDT-TTF)2 (AuBr2) (AuBr2)y<missing VAR> which exhibits alarge, hysteretic, negative magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SF5
###Electronic Structure of Novel Cation-Radical Salts in High Magnetic Fields|J. S. Brooks,L. Balicas,K. Storr,B. H. Ward,S. Uji,T. Terashima,C. Terakura,J. A. Schlueter,R. W. Winter,J. Mohtasham,G. L. Gard,G. C. Papavassiliou,M. Tokumoto###
(81950, 81952)
 Two organic conducting materials, where unusual aspects of their compositionplay important roles, are explored beta-(BEDT-TTF)2SF5X<missing VAR>SO3 which exhibitssuperconductivity, or a metal-insulator transition (for X<missing VAR>CH2CF2 or CHFrespectively), and tau-(P-S, S -DMEDT-TTF)2 (AuBr2) (AuBr2)y<missing VAR> which exhibits alarge, hysteretic, negative magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO3
###Electronic Structure of Novel Cation-Radical Salts in High Magnetic Fields|J. S. Brooks,L. Balicas,K. Storr,B. H. Ward,S. Uji,T. Terashima,C. Terakura,J. A. Schlueter,R. W. Winter,J. Mohtasham,G. L. Gard,G. C. Papavassiliou,M. Tokumoto###
(81954, 81956)
 Two organic conducting materials, where unusual aspects of their compositionplay important roles, are explored beta-(BEDT-TTF)2SF5X<missing VAR>SO3 which exhibitssuperconductivity, or a metal-insulator transition (for X<missing VAR>CH2CF2 or CHFrespectively), and tau-(P-S, S -DMEDT-TTF)2 (AuBr2) (AuBr2)y<missing VAR> which exhibits alarge, hysteretic, negative magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CH2CF2
###Electronic Structure of Novel Cation-Radical Salts in High Magnetic Fields|J. S. Brooks,L. Balicas,K. Storr,B. H. Ward,S. Uji,T. Terashima,C. Terakura,J. A. Schlueter,R. W. Winter,J. Mohtasham,G. L. Gard,G. C. Papavassiliou,M. Tokumoto###
(81980, 81985)
 Two organic conducting materials, where unusual aspects of their compositionplay important roles, are explored beta-(BEDT-TTF)2SF5X<missing VAR>SO3 which exhibitssuperconductivity, or a metal-insulator transition (for X<missing VAR>CH2CF2 or CHFrespectively), and tau-(P-S, S -DMEDT-TTF)2 (AuBr2) (AuBr2)y<missing VAR> which exhibits alarge, hysteretic, negative magnetoresistance.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CHF
###Electronic Structure of Novel Cation-Radical Salts in High Magnetic Fields|J. S. Brooks,L. Balicas,K. Storr,B. H. Ward,S. Uji,T. Terashima,C. Terakura,J. A. Schlueter,R. W. Winter,J. Mohtasham,G. L. Gard,G. C. Papavassiliou,M. Tokumoto###
(81989, 81991)
 Two organic conducting materials, where unusual aspects of their compositionplay important roles, are explored beta-(BEDT-TTF)2SF5X<missing VAR>SO3 which exhibitssuperconductivity, or a metal-insulator transition (for X<missing VAR>CH2CF2 or CHFrespectively), and tau-(P-S, S -DMEDT-TTF)2 (AuBr2) (AuBr2)y<missing VAR> which exhibits alarge, hysteretic, negative magnetoresistance.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Electronic Structure of Novel Cation-Radical Salts in High Magnetic Fields|J. S. Brooks,L. Balicas,K. Storr,B. H. Ward,S. Uji,T. Terashima,C. Terakura,J. A. Schlueter,R. W. Winter,J. Mohtasham,G. L. Gard,G. C. Papavassiliou,M. Tokumoto###
(82003, 82003)
 Two organic conducting materials, where unusual aspects of their compositionplay important roles, are explored beta-(BEDT-TTF)2SF5X<missing VAR>SO3 which exhibitssuperconductivity, or a metal-insulator transition (for X<missing VAR>CH2CF2 or CHFrespectively), and tau-(P-S, S -DMEDT-TTF)2 (AuBr2) (AuBr2)y<missing VAR> which exhibits alarge, hysteretic, negative magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Electronic Structure of Novel Cation-Radical Salts in High Magnetic Fields|J. S. Brooks,L. Balicas,K. Storr,B. H. Ward,S. Uji,T. Terashima,C. Terakura,J. A. Schlueter,R. W. Winter,J. Mohtasham,G. L. Gard,G. C. Papavassiliou,M. Tokumoto###
(82005, 82005)
 Two organic conducting materials, where unusual aspects of their compositionplay important roles, are explored beta-(BEDT-TTF)2SF5X<missing VAR>SO3 which exhibitssuperconductivity, or a metal-insulator transition (for X<missing VAR>CH2CF2 or CHFrespectively), and tau-(P-S, S -DMEDT-TTF)2 (AuBr2) (AuBr2)y<missing VAR> which exhibits alarge, hysteretic, negative magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Electronic Structure of Novel Cation-Radical Salts in High Magnetic Fields|J. S. Brooks,L. Balicas,K. Storr,B. H. Ward,S. Uji,T. Terashima,C. Terakura,J. A. Schlueter,R. W. Winter,J. Mohtasham,G. L. Gard,G. C. Papavassiliou,M. Tokumoto###
(82008, 82008)
 Two organic conducting materials, where unusual aspects of their compositionplay important roles, are explored beta-(BEDT-TTF)2SF5X<missing VAR>SO3 which exhibitssuperconductivity, or a metal-insulator transition (for X<missing VAR>CH2CF2 or CHFrespectively), and tau-(P-S, S -DMEDT-TTF)2 (AuBr2) (AuBr2)y<missing VAR> which exhibits alarge, hysteretic, negative magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Electronic Structure of Novel Cation-Radical Salts in High Magnetic Fields|J. S. Brooks,L. Balicas,K. Storr,B. H. Ward,S. Uji,T. Terashima,C. Terakura,J. A. Schlueter,R. W. Winter,J. Mohtasham,G. L. Gard,G. C. Papavassiliou,M. Tokumoto###
(82019, 82019)
 Two organic conducting materials, where unusual aspects of their compositionplay important roles, are explored beta-(BEDT-TTF)2SF5X<missing VAR>SO3 which exhibitssuperconductivity, or a metal-insulator transition (for X<missing VAR>CH2CF2 or CHFrespectively), and tau-(P-S, S -DMEDT-TTF)2 (AuBr2) (AuBr2)y<missing VAR> which exhibits alarge, hysteretic, negative magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(AuBr2)
###Electronic Structure of Novel Cation-Radical Salts in High Magnetic Fields|J. S. Brooks,L. Balicas,K. Storr,B. H. Ward,S. Uji,T. Terashima,C. Terakura,J. A. Schlueter,R. W. Winter,J. Mohtasham,G. L. Gard,G. C. Papavassiliou,M. Tokumoto###
(82023, 82027)
 Two organic conducting materials, where unusual aspects of their compositionplay important roles, are explored beta-(BEDT-TTF)2SF5X<missing VAR>SO3 which exhibitssuperconductivity, or a metal-insulator transition (for X<missing VAR>CH2CF2 or CHFrespectively), and tau-(P-S, S -DMEDT-TTF)2 (AuBr2) (AuBr2)y<missing VAR> which exhibits alarge, hysteretic, negative magnetoresistance.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(AuBr2)
###Electronic Structure of Novel Cation-Radical Salts in High Magnetic Fields|J. S. Brooks,L. Balicas,K. Storr,B. H. Ward,S. Uji,T. Terashima,C. Terakura,J. A. Schlueter,R. W. Winter,J. Mohtasham,G. L. Gard,G. C. Papavassiliou,M. Tokumoto###
(82029, 82033)
 Two organic conducting materials, where unusual aspects of their compositionplay important roles, are explored beta-(BEDT-TTF)2SF5X<missing VAR>SO3 which exhibitssuperconductivity, or a metal-insulator transition (for X<missing VAR>CH2CF2 or CHFrespectively), and tau-(P-S, S -DMEDT-TTF)2 (AuBr2) (AuBr2)y<missing VAR> which exhibits alarge, hysteretic, negative magnetoresistance.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(B)
###Quasiclassical negative magnetoresistance of a 2D electron gas: interplay of strong scatterers and smooth disorder|A. D. Mirlin,D. G. Polyakov,F. Evers,P. Woelfle###
(82273, 82275)
 Wedemonstrate that the combination of the two types of disorder induces a novelmechanism leading to a strong negative magnetoresistance, followed by thesaturation of the magnetoresistivity rhoxx(B) at a value determinedsolely by the smooth disorder.
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 2, 'D', 2]

Fe
###Enhanced Granular Magnetoresistance due to Ferromagnetic Layers|J. Balogh,M. Csontos,D. Kaptas,G. Mihaly###
(82529, 82529)
 Giant magnetoresistance (GMR) of sequentially evaporated Fe-Ag structureshave been investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ag
###Enhanced Granular Magnetoresistance due to Ferromagnetic Layers|J. Balogh,M. Csontos,D. Kaptas,G. Mihaly###
(82531, 82531)
 Giant magnetoresistance (GMR) of sequentially evaporated Fe-Ag structureshave been investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Zener Tunneling Between Landau Orbits in a High-Mobility Two-Dimensional Electron Gas|C. L. Yang,J. Zhang,R. R. Du,J. A. Simmons,J. L. Reno###
(82857, 82858)
 A remarkable oscillation effect in weakfield magnetoresistance has been observed in high-mobility 2DEGs inGaAs-AlGa0.3As0.7 heterostructures, and can be well explained by theZener mechanism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 2, 'DEGs', 0]

AlGa0.3As0.7
###Zener Tunneling Between Landau Orbits in a High-Mobility Two-Dimensional Electron Gas|C. L. Yang,J. Zhang,R. R. Du,J. A. Simmons,J. L. Reno###
(82860, 82864)
 A remarkable oscillation effect in weakfield magnetoresistance has been observed in high-mobility 2DEGs inGaAs-AlGa0.3As0.7 heterostructures, and can be well explained by theZener mechanism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0.35,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 2, 'DEGs', 0]

Ni
###Ballistic Magnetoresitance over 4000% at Room Temperature in Ni-Ni Electrodeposited Nanocontacts|Hai Wang,H. Cheng,N. Garcia###
(83317, 83317)
Ballistic Magnetoresitance over 4000% at Room Temperature in Ni-Ni Electrodeposited Nanocontacts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 4000, '%', 0],[23.0, 4000, '%', 1],[83.0, 400, '%', 2]

Ni
###Ballistic Magnetoresitance over 4000% at Room Temperature in Ni-Ni Electrodeposited Nanocontacts|Hai Wang,H. Cheng,N. Garcia###
(83319, 83319)
Ballistic Magnetoresitance over 4000% at Room Temperature in Ni-Ni Electrodeposited Nanocontacts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 4000, '%', 0],[21.0, 4000, '%', 1],[81.0, 400, '%', 2]

Ni
###Ballistic Magnetoresitance over 4000% at Room Temperature in Ni-Ni Electrodeposited Nanocontacts|Hai Wang,H. Cheng,N. Garcia###
(83350, 83350)
 This paper reports ballistic magnetoresistance values over 4000% measured inelectrodeposited Ni-Ni nanocontacts with T<missing VAR> geometry previously developed .
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 4000, '%', 1],[10.0, 4000, '%', 0],[50.0, 400, '%', 1]

Ni
###Ballistic Magnetoresitance over 4000% at Room Temperature in Ni-Ni Electrodeposited Nanocontacts|Hai Wang,H. Cheng,N. Garcia###
(83352, 83352)
 This paper reports ballistic magnetoresistance values over 4000% measured inelectrodeposited Ni-Ni nanocontacts with T<missing VAR> geometry previously developed .
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 4000, '%', 1],[12.0, 4000, '%', 0],[48.0, 400, '%', 1]

La0.7Sr0.3MnO3/SrTiO3
###Stoner-Wohlfart model applied to bicrystal magnetoresistance hysteresis|R. Gunnarsson,M. Hanson,C. Dubourdieu###
(84208, 84219)
 Moreover, we show that it is necessary to include biaxialmagnetocrystalline anisotropy to fully describe the grain boundarymagnetoresistance in La0.7Sr0.3MnO3/SrTiO3 bicrystal tunneljunctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Ga
###Large tunneling anisotropic magnetoresistance in (Ga,Mn)As nanoconstrictions|A. D. Giddings,M. N. Khalid,J. Wunderlich,S. Yasin,R. P. Campion,K. W. Edmonds,J. Sinova,T. Jungwirth,K. Ito,K. Y. Wang,D. Williams,B. L. Gallagher,C. T. Foxon###
(84248, 84248)
Large tunneling anisotropic magnetoresistance in (Ga,Mn)As nanoconstrictions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Large tunneling anisotropic magnetoresistance in (Ga,Mn)As nanoconstrictions|A. D. Giddings,M. N. Khalid,J. Wunderlich,S. Yasin,R. P. Campion,K. W. Edmonds,J. Sinova,T. Jungwirth,K. Ito,K. Y. Wang,D. Williams,B. L. Gallagher,C. T. Foxon###
(84250, 84250)
Large tunneling anisotropic magnetoresistance in (Ga,Mn)As nanoconstrictions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Large tunneling anisotropic magnetoresistance in (Ga,Mn)As nanoconstrictions|A. D. Giddings,M. N. Khalid,J. Wunderlich,S. Yasin,R. P. Campion,K. W. Edmonds,J. Sinova,T. Jungwirth,K. Ito,K. Y. Wang,D. Williams,B. L. Gallagher,C. T. Foxon###
(84252, 84252)
Large tunneling anisotropic magnetoresistance in (Ga,Mn)As nanoconstrictions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###Large tunneling anisotropic magnetoresistance in (Ga,Mn)As nanoconstrictions|A. D. Giddings,M. N. Khalid,J. Wunderlich,S. Yasin,R. P. Campion,K. W. Edmonds,J. Sinova,T. Jungwirth,K. Ito,K. Y. Wang,D. Williams,B. L. Gallagher,C. T. Foxon###
(84286, 84286)
 We report a large tunneling anisotropic magnetoresistance (TAMR) in a thin(Ga,Mn)As epilayer with lateral nanoconstrictions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Large tunneling anisotropic magnetoresistance in (Ga,Mn)As nanoconstrictions|A. D. Giddings,M. N. Khalid,J. Wunderlich,S. Yasin,R. P. Campion,K. W. Edmonds,J. Sinova,T. Jungwirth,K. Ito,K. Y. Wang,D. Williams,B. L. Gallagher,C. T. Foxon###
(84288, 84288)
 We report a large tunneling anisotropic magnetoresistance (TAMR) in a thin(Ga,Mn)As epilayer with lateral nanoconstrictions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Large tunneling anisotropic magnetoresistance in (Ga,Mn)As nanoconstrictions|A. D. Giddings,M. N. Khalid,J. Wunderlich,S. Yasin,R. P. Campion,K. W. Edmonds,J. Sinova,T. Jungwirth,K. Ito,K. Y. Wang,D. Williams,B. L. Gallagher,C. T. Foxon###
(84290, 84290)
 We report a large tunneling anisotropic magnetoresistance (TAMR) in a thin(Ga,Mn)As epilayer with lateral nanoconstrictions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magnetoresistance of mesoscopic granular ferromagnets|A. Y. Dokow H. Vilchik,A. Frydman###
(84571, 84571)
 In addition, the evolution of the magnetoresistance curve as theintergrain distance decreases is qualitatively different than that of largesamples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###Spin-dependent tunneling in modulated structures of (Ga,Mn)As|P. Sankowski,P. Kacman,J. A. Majewski,T. Dietl###
(85226, 85226)
Spin-dependent tunneling in modulated structures of (Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Spin-dependent tunneling in modulated structures of (Ga,Mn)As|P. Sankowski,P. Kacman,J. A. Majewski,T. Dietl###
(85228, 85228)
Spin-dependent tunneling in modulated structures of (Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Spin-dependent tunneling in modulated structures of (Ga,Mn)As|P. Sankowski,P. Kacman,J. A. Majewski,T. Dietl###
(85230, 85230)
Spin-dependent tunneling in modulated structures of (Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Spin-dependent tunneling in modulated structures of (Ga,Mn)As|P. Sankowski,P. Kacman,J. A. Majewski,T. Dietl###
(85263, 85263)
 A model of coherent tunneling, which combines multi-orbital tight-bindingapproximation with Landauer-Buttiker formalism, is developed and applied toall-semiconductor heterostructures containing (Ga,Mn)As ferromagnetic layers.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###Spin-dependent tunneling in modulated structures of (Ga,Mn)As|P. Sankowski,P. Kacman,J. A. Majewski,T. Dietl###
(85289, 85289)
 A model of coherent tunneling, which combines multi-orbital tight-bindingapproximation with Landauer-Buttiker formalism, is developed and applied toall-semiconductor heterostructures containing (Ga,Mn)As ferromagnetic layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Spin-dependent tunneling in modulated structures of (Ga,Mn)As|P. Sankowski,P. Kacman,J. A. Majewski,T. Dietl###
(85291, 85291)
 A model of coherent tunneling, which combines multi-orbital tight-bindingapproximation with Landauer-Buttiker formalism, is developed and applied toall-semiconductor heterostructures containing (Ga,Mn)As ferromagnetic layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Spin-dependent tunneling in modulated structures of (Ga,Mn)As|P. Sankowski,P. Kacman,J. A. Majewski,T. Dietl###
(85293, 85293)
 A model of coherent tunneling, which combines multi-orbital tight-bindingapproximation with Landauer-Buttiker formalism, is developed and applied toall-semiconductor heterostructures containing (Ga,Mn)As ferromagnetic layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La2-xSr
###Negative Hopping Magnetoresistance and Dimensional Crossover in Lightly Doped Cuprate Superconductors|Valeri N. Kotov,Oleg P. Sushkov,M. B. Silva Neto,L. Benfatto,A. H. Castro Neto###
(85471, 85475)
 We show that, due to the weak ferromagnetism of La2-xSrx<missing VAR>CuO4, anexternal magnetic field leads to a dimensional crossover 2D to 3D for thein-plane transport.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[25.0, 2, 'D', 0],[28.0, 3, 'D', 0]

CuO4
###Negative Hopping Magnetoresistance and Dimensional Crossover in Lightly Doped Cuprate Superconductors|Valeri N. Kotov,Oleg P. Sushkov,M. B. Silva Neto,L. Benfatto,A. H. Castro Neto###
(85477, 85479)
 We show that, due to the weak ferromagnetism of La2-xSrx<missing VAR>CuO4, anexternal magnetic field leads to a dimensional crossover 2D to 3D for thein-plane transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 2, 'D', 0],[24.0, 3, 'D', 0]

N
###Negative Hopping Magnetoresistance and Dimensional Crossover in Lightly Doped Cuprate Superconductors|Valeri N. Kotov,Oleg P. Sushkov,M. B. Silva Neto,L. Benfatto,A. H. Castro Neto###
(85596, 85596)
 This mechanism quantitatively explains puzzlingexperimental data on the negative magnetoresistance in the Neel phase ofLa2-xSrx<missing VAR>CuO4.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 2, 'D', 2],[93.0, 3, 'D', 2]

La2-xSr
###Negative Hopping Magnetoresistance and Dimensional Crossover in Lightly Doped Cuprate Superconductors|Valeri N. Kotov,Oleg P. Sushkov,M. B. Silva Neto,L. Benfatto,A. H. Castro Neto###
(85604, 85608)
 This mechanism quantitatively explains puzzlingexperimental data on the negative magnetoresistance in the Neel phase ofLa2-xSrx<missing VAR>CuO4.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[104.0, 2, 'D', 2],[101.0, 3, 'D', 2]

CuO4
###Negative Hopping Magnetoresistance and Dimensional Crossover in Lightly Doped Cuprate Superconductors|Valeri N. Kotov,Oleg P. Sushkov,M. B. Silva Neto,L. Benfatto,A. H. Castro Neto###
(85610, 85612)
 This mechanism quantitatively explains puzzlingexperimental data on the negative magnetoresistance in the Neel phase ofLa2-xSrx<missing VAR>CuO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 2, 'D', 2],[107.0, 3, 'D', 2]

Fe
###Room-temperature magnetoresistance switching of Py thin films induced by Fe-nanoparticles grown by STM-assisted CVD|Jens Mueller,Steffen Wirth,Stephan von Molnar###
(85835, 85835)
Room-temperature magnetoresistance switching of Py thin films induced by Fe-nanoparticles grown by STM-assisted CVD<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Room-temperature magnetoresistance switching of Py thin films induced by Fe-nanoparticles grown by STM-assisted CVD|Jens Mueller,Steffen Wirth,Stephan von Molnar###
(85843, 85843)
Room-temperature magnetoresistance switching of Py thin films induced by Fe-nanoparticles grown by STM-assisted CVD<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CV
###Room-temperature magnetoresistance switching of Py thin films induced by Fe-nanoparticles grown by STM-assisted CVD|Jens Mueller,Steffen Wirth,Stephan von Molnar###
(85849, 85850)
Room-temperature magnetoresistance switching of Py thin films induced by Fe-nanoparticles grown by STM-assisted CVD<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Room-temperature magnetoresistance switching of Py thin films induced by Fe-nanoparticles grown by STM-assisted CVD|Jens Mueller,Steffen Wirth,Stephan von Molnar###
(85858, 85858)
 Arrays of Fe-nanoparticles grown by STM-assited CVD<missing VAR> have been placed on topof a narrow stripe of Py.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Room-temperature magnetoresistance switching of Py thin films induced by Fe-nanoparticles grown by STM-assisted CVD|Jens Mueller,Steffen Wirth,Stephan von Molnar###
(85866, 85866)
 Arrays of Fe-nanoparticles grown by STM-assited CVD<missing VAR> have been placed on topof a narrow stripe of Py.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CV
###Room-temperature magnetoresistance switching of Py thin films induced by Fe-nanoparticles grown by STM-assisted CVD|Jens Mueller,Steffen Wirth,Stephan von Molnar###
(85872, 85873)
 Arrays of Fe-nanoparticles grown by STM-assited CVD<missing VAR> have been placed on topof a narrow stripe of Py.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###(Ga,Mn)As based superlattices and the search for antiferromagnetic interlayer coupling|A. D. Giddings,T. Jungwirth,B. L. Gallagher###
(86028, 86028)
(Ga,Mn)As based superlattices and the search for antiferromagnetic interlayer coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###(Ga,Mn)As based superlattices and the search for antiferromagnetic interlayer coupling|A. D. Giddings,T. Jungwirth,B. L. Gallagher###
(86030, 86030)
(Ga,Mn)As based superlattices and the search for antiferromagnetic interlayer coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###(Ga,Mn)As based superlattices and the search for antiferromagnetic interlayer coupling|A. D. Giddings,T. Jungwirth,B. L. Gallagher###
(86032, 86032)
(Ga,Mn)As based superlattices and the search for antiferromagnetic interlayer coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###(Ga,Mn)As based superlattices and the search for antiferromagnetic interlayer coupling|A. D. Giddings,T. Jungwirth,B. L. Gallagher###
(86111, 86111)
 In this paper we use a mean-field theory of carrier inducedferromagnetism to explore the multidimensional parameter space available in(Ga,Mn)As based superlattice systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###(Ga,Mn)As based superlattices and the search for antiferromagnetic interlayer coupling|A. D. Giddings,T. Jungwirth,B. L. Gallagher###
(86156, 86156)
 In this paper we use a mean-field theory of carrier inducedferromagnetism to explore the multidimensional parameter space available in(Ga,Mn)As based superlattice systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###(Ga,Mn)As based superlattices and the search for antiferromagnetic interlayer coupling|A. D. Giddings,T. Jungwirth,B. L. Gallagher###
(86158, 86158)
 In this paper we use a mean-field theory of carrier inducedferromagnetism to explore the multidimensional parameter space available in(Ga,Mn)As based superlattice systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###(Ga,Mn)As based superlattices and the search for antiferromagnetic interlayer coupling|A. D. Giddings,T. Jungwirth,B. L. Gallagher###
(86160, 86160)
 In this paper we use a mean-field theory of carrier inducedferromagnetism to explore the multidimensional parameter space available in(Ga,Mn)As based superlattice systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Higher order terms in the geometric resonance of open orbits in unidirectional lateral superlattices|Akira Endo,Yasuhiro Iye###
(86300, 86300)
Magnetoresistance oscillations periodic in 1/B, analogous to the well-knowncommensurability oscillations but orders of magnitude smaller both in magnitudeand in the magnetic-field scale, have been observed superposed on the low-fieldpositive magnetoresistance.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Higher order terms in the geometric resonance of open orbits in unidirectional lateral superlattices|Akira Endo,Yasuhiro Iye###
(86378, 86378)
 The periodicity in 1/B can be interpreted in termsof higher order resonances.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Evidence for Two-Dimensional Spin-Glass Ordering in Submonolayer Fe Films on Cleaved InAs Surfaces|Toshimitsu Mochizuki,Ryuichi Masutomi,Tohru Okamoto###
(86426, 86426)
Evidence for Two-Dimensional Spin-Glass Ordering in Submonolayer Fe Films on Cleaved InAs Surfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 1.7, 'K', 2],[136.0, 0.42, 'monolayer', 2]

InAs
###Evidence for Two-Dimensional Spin-Glass Ordering in Submonolayer Fe Films on Cleaved InAs Surfaces|Toshimitsu Mochizuki,Ryuichi Masutomi,Tohru Okamoto###
(86434, 86435)
Evidence for Two-Dimensional Spin-Glass Ordering in Submonolayer Fe Films on Cleaved InAs Surfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 1.7, 'K', 2],[127.0, 0.42, 'monolayer', 2]

Fe
###Evidence for Two-Dimensional Spin-Glass Ordering in Submonolayer Fe Films on Cleaved InAs Surfaces|Toshimitsu Mochizuki,Ryuichi Masutomi,Tohru Okamoto###
(86483, 86483)
 Magnetotransport measurements have been performed on two-dimensional electrongases formed at InAs(110) surfaces covered with a submonolayer of Fe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 1.7, 'K', 1],[79.0, 0.42, 'monolayer', 1]

Fe
###Evidence for Two-Dimensional Spin-Glass Ordering in Submonolayer Fe Films on Cleaved InAs Surfaces|Toshimitsu Mochizuki,Ryuichi Masutomi,Tohru Okamoto###
(86586, 86586)
 These features areassociated with spin-glass ordering in the Fe film.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 1.7, 'K', 1],[24.0, 0.42, 'monolayer', 1]

B
###Effects of the Zero-Mode Landau Level on Inter-Layer Magnetoresistance in Multilayer Massless Dirac Fermion Systems|N. Tajima,S. Sugawara,R. Kato,Y. Nishio,K. Kajita###
(86668, 86668)
 We report on the experimental results of interlayer magnetoresistance inmultilayer massless Dirac fermion system alpha-(BEDT-TTF)2I3 underhydrostatic pressure and its interpretation.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Effects of the Zero-Mode Landau Level on Inter-Layer Magnetoresistance in Multilayer Massless Dirac Fermion Systems|N. Tajima,S. Sugawara,R. Kato,Y. Nishio,K. Kajita###
(86675, 86675)
 We report on the experimental results of interlayer magnetoresistance inmultilayer massless Dirac fermion system alpha-(BEDT-TTF)2I3 underhydrostatic pressure and its interpretation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I3
###Effects of the Zero-Mode Landau Level on Inter-Layer Magnetoresistance in Multilayer Massless Dirac Fermion Systems|N. Tajima,S. Sugawara,R. Kato,Y. Nishio,K. Kajita###
(86678, 86679)
 We report on the experimental results of interlayer magnetoresistance inmultilayer massless Dirac fermion system alpha-(BEDT-TTF)2I3 underhydrostatic pressure and its interpretation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr
###Cr-doping effect on the orbital fluctuation of heavily doped Nd1-xSrxMnO3 (x ~ 0.625)|R. Tasaki,S. Fukushima,M. Akaki,D. Akahoshi,H. Kuwahara###
(86819, 86819)
Cr-doping effect on the orbital fluctuation of heavily doped Nd1-xSrxMnO3 (x<missing VAR>  0.625).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 3, 'z', 1],[169.0, 0.05, ',', 2],[219.0, 0.05, ',', 3]

Nd1-x
###Cr-doping effect on the orbital fluctuation of heavily doped Nd1-xSrxMnO3 (x ~ 0.625)|R. Tasaki,S. Fukushima,M. Akaki,D. Akahoshi,H. Kuwahara###
(86839, 86842)
Cr-doping effect on the orbital fluctuation of heavily doped Nd1-xSrxMnO3 (x<missing VAR>  0.625).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[58.0, 3, 'z', 1],[146.0, 0.05, ',', 2],[196.0, 0.05, ',', 3]

MnO3
###Cr-doping effect on the orbital fluctuation of heavily doped Nd1-xSrxMnO3 (x ~ 0.625)|R. Tasaki,S. Fukushima,M. Akaki,D. Akahoshi,H. Kuwahara###
(86844, 86846)
Cr-doping effect on the orbital fluctuation of heavily doped Nd1-xSrxMnO3 (x<missing VAR>  0.625).
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 3, 'z', 1],[142.0, 0.05, ',', 2],[192.0, 0.05, ',', 3]

Cr
###Cr-doping effect on the orbital fluctuation of heavily doped Nd1-xSrxMnO3 (x ~ 0.625)|R. Tasaki,S. Fukushima,M. Akaki,D. Akahoshi,H. Kuwahara###
(86864, 86864)
 We have investigated the Cr-doping effect of Nd0.375Sr0.625MnO3 near thephase boundary between the x<missing VAR>2-y<missing VAR>2 and 3z2-r<missing VAR>2 orbital ordered states, where aferromagnetic correlation and concomitant large magnetoresistance are observedowing to orbital fluctuation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 3, 'z', 0],[124.0, 0.05, ',', 1],[174.0, 0.05, ',', 2]

Nd0.375Sr0.625MnO3
###Cr-doping effect on the orbital fluctuation of heavily doped Nd1-xSrxMnO3 (x ~ 0.625)|R. Tasaki,S. Fukushima,M. Akaki,D. Akahoshi,H. Kuwahara###
(86872, 86878)
 We have investigated the Cr-doping effect of Nd0.375Sr0.625MnO3 near thephase boundary between the x<missing VAR>2-y<missing VAR>2 and 3z2-r<missing VAR>2 orbital ordered states, where aferromagnetic correlation and concomitant large magnetoresistance are observedowing to orbital fluctuation.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.075,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 3, 'z', 0],[110.0, 0.05, ',', 1],[160.0, 0.05, ',', 2]

Cr
###Cr-doping effect on the orbital fluctuation of heavily doped Nd1-xSrxMnO3 (x ~ 0.625)|R. Tasaki,S. Fukushima,M. Akaki,D. Akahoshi,H. Kuwahara###
(86944, 86944)
 Cr-doping steeply suppresses the ferromagneticcorrelation and magnetoresistance in Nd0.375Sr0.625Mn1-yCryO3 with 0 < y<missing VAR> <0.05, while they reappear in 0.05 < y<missing VAR> < 0.10.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 3, 'z', 1],[44.0, 0.05, ',', 0],[94.0, 0.05, ',', 1]

Nd0.375Sr0.625Mn1-y
###Cr-doping effect on the orbital fluctuation of heavily doped Nd1-xSrxMnO3 (x ~ 0.625)|R. Tasaki,S. Fukushima,M. Akaki,D. Akahoshi,H. Kuwahara###
(86965, 86972)
 Cr-doping steeply suppresses the ferromagneticcorrelation and magnetoresistance in Nd0.375Sr0.625Mn1-yCryO3 with 0 < y<missing VAR> <0.05, while they reappear in 0.05 < y<missing VAR> < 0.10.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[65.0, 3, 'z', 1],[16.0, 0.05, ',', 0],[66.0, 0.05, ',', 1]

O3
###Cr-doping effect on the orbital fluctuation of heavily doped Nd1-xSrxMnO3 (x ~ 0.625)|R. Tasaki,S. Fukushima,M. Akaki,D. Akahoshi,H. Kuwahara###
(86974, 86975)
 Cr-doping steeply suppresses the ferromagneticcorrelation and magnetoresistance in Nd0.375Sr0.625Mn1-yCryO3 with 0 < y<missing VAR> <0.05, while they reappear in 0.05 < y<missing VAR> < 0.10.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 3, 'z', 1],[13.0, 0.05, ',', 0],[63.0, 0.05, ',', 1]

GeMn
###Magnetization driven metal - insulator transition in strongly disordered Ge:Mn magnetic semiconductors|O. Riss,A. Gerber,I. Ya. Korenblit,A. Suslov,M. Passacantando,L. Ottaviano###
(87295, 87296)
Magnetization driven metal - insulator transition in strongly disordered GeMn magnetic semiconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GeMn
###Magnetization driven metal - insulator transition in strongly disordered Ge:Mn magnetic semiconductors|O. Riss,A. Gerber,I. Ya. Korenblit,A. Suslov,M. Passacantando,L. Ottaviano###
(87330, 87331)
 We report on the temperature and field driven metal-insulator transition indisordered GeMn magnetic semiconductors accompanied by magnetic ordering,magnetoresistance reaching thousands of percents and suppression of theextraordinary Hall effect by a magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GeMn
###Magnetization driven metal - insulator transition in strongly disordered Ge:Mn magnetic semiconductors|O. Riss,A. Gerber,I. Ya. Korenblit,A. Suslov,M. Passacantando,L. Ottaviano###
(87470, 87471)
 We argue that the strong magnetic disorderleads to localization of charge carriers and is the origin of the unusualproperties of GeMn alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co/Ag/Co/Gd
###Giant magnetic broadening of ferromagnetic resonance in a GMR Co/Ag/Co/Gd quadlayer|Sezen Demirtas,Ali R. Koymen,Myron B. Salamon###
(87706, 87712)
Giant magnetic broadening of ferromagnetic resonance in a GMR Co/Ag/Co/Gd quadlayer.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Co
###Giant magnetic broadening of ferromagnetic resonance in a GMR Co/Ag/Co/Gd quadlayer|Sezen Demirtas,Ali R. Koymen,Myron B. Salamon###
(87784, 87784)
 We employ the antiferromagnetic coupling between Co and Gdto provide a spontaneous change from parallel to antiparallel alignment of twoCo films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Gd
###Giant magnetic broadening of ferromagnetic resonance in a GMR Co/Ag/Co/Gd quadlayer|Sezen Demirtas,Ali R. Koymen,Myron B. Salamon###
(87788, 87788)
 We employ the antiferromagnetic coupling between Co and Gdto provide a spontaneous change from parallel to antiparallel alignment of twoCo films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Giant magnetic broadening of ferromagnetic resonance in a GMR Co/Ag/Co/Gd quadlayer|Sezen Demirtas,Ali R. Koymen,Myron B. Salamon###
(87816, 87816)
 We employ the antiferromagnetic coupling between Co and Gdto provide a spontaneous change from parallel to antiparallel alignment of twoCo films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(Sb2Te3)
###Diameter Dependence of the Transport Properties of Antimony Telluride Nanowires|Y. M. Zuev,J. S. Lee,C. Galloy,H. Park,P. Kim###
(87929, 87934)
 We report measurements of electronic, thermoelectric, and galvanomagneticproperties of individual single crystal antimony telluride (Sb2Te3) nanowireswith diameters in the range of 20-100 nm.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 110, 'uV', 1],[93.0, 300, 'K', 1]

P
###Diameter Dependence of the Transport Properties of Antimony Telluride Nanowires|Y. M. Zuev,J. S. Lee,C. Galloy,H. Park,P. Kim###
(87974, 87974)
 Temperature dependent resistivity andthermoelectric power (TEP) measurements indicate hole dominant diffusivethermoelectric generation, with an enhancement of the TEP for smaller diameterwires up to 110 uV/K at T<missing VAR>  300 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 110, 'uV', 0],[53.0, 300, 'K', 0]

P
###Diameter Dependence of the Transport Properties of Antimony Telluride Nanowires|Y. M. Zuev,J. S. Lee,C. Galloy,H. Park,P. Kim###
(88005, 88005)
 Temperature dependent resistivity andthermoelectric power (TEP) measurements indicate hole dominant diffusivethermoelectric generation, with an enhancement of the TEP for smaller diameterwires up to 110 uV/K at T<missing VAR>  300 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 110, 'uV', 0],[22.0, 300, 'K', 0]

K
###Diameter Dependence of the Transport Properties of Antimony Telluride Nanowires|Y. M. Zuev,J. S. Lee,C. Galloy,H. Park,P. Kim###
(88021, 88021)
 Temperature dependent resistivity andthermoelectric power (TEP) measurements indicate hole dominant diffusivethermoelectric generation, with an enhancement of the TEP for smaller diameterwires up to 110 uV/K at T<missing VAR>  300 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 110, 'uV', 0],[6.0, 300, 'K', 0]

Ga
###Local spin valve effect in lateral (Ga,Mn)As/GaAs spin Esaki diode devices|Mariusz Ciorga,Christian Wolf,Andreas Einwanger,Martin Utz,Dieter Schuh,Dieter Weiss###
(88106, 88106)
Local spin valve effect in lateral (Ga,Mn)As/GaAs spin Esaki diode devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 30, 'Ohm', 3]

Mn
###Local spin valve effect in lateral (Ga,Mn)As/GaAs spin Esaki diode devices|Mariusz Ciorga,Christian Wolf,Andreas Einwanger,Martin Utz,Dieter Schuh,Dieter Weiss###
(88108, 88108)
Local spin valve effect in lateral (Ga,Mn)As/GaAs spin Esaki diode devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 30, 'Ohm', 3]

As/GaAs
###Local spin valve effect in lateral (Ga,Mn)As/GaAs spin Esaki diode devices|Mariusz Ciorga,Christian Wolf,Andreas Einwanger,Martin Utz,Dieter Schuh,Dieter Weiss###
(88110, 88113)
Local spin valve effect in lateral (Ga,Mn)As/GaAs spin Esaki diode devices.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[159.0, 30, 'Ohm', 3]

Ga
###Local spin valve effect in lateral (Ga,Mn)As/GaAs spin Esaki diode devices|Mariusz Ciorga,Christian Wolf,Andreas Einwanger,Martin Utz,Dieter Schuh,Dieter Weiss###
(88170, 88170)
 We report on a local spin valve effect observed unambiguously in lateralall-semiconductor all-electrical spin injection devices, employingp<missing VAR>-(Ga,Mn)As/n<missing VAR>-GaAs Esaki diode structures as spin aligning contacts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 30, 'Ohm', 2]

Mn
###Local spin valve effect in lateral (Ga,Mn)As/GaAs spin Esaki diode devices|Mariusz Ciorga,Christian Wolf,Andreas Einwanger,Martin Utz,Dieter Schuh,Dieter Weiss###
(88172, 88172)
 We report on a local spin valve effect observed unambiguously in lateralall-semiconductor all-electrical spin injection devices, employingp<missing VAR>-(Ga,Mn)As/n<missing VAR>-GaAs Esaki diode structures as spin aligning contacts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 30, 'Ohm', 2]

As
###Local spin valve effect in lateral (Ga,Mn)As/GaAs spin Esaki diode devices|Mariusz Ciorga,Christian Wolf,Andreas Einwanger,Martin Utz,Dieter Schuh,Dieter Weiss###
(88174, 88174)
 We report on a local spin valve effect observed unambiguously in lateralall-semiconductor all-electrical spin injection devices, employingp<missing VAR>-(Ga,Mn)As/n<missing VAR>-GaAs Esaki diode structures as spin aligning contacts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 30, 'Ohm', 2]

GaAs
###Local spin valve effect in lateral (Ga,Mn)As/GaAs spin Esaki diode devices|Mariusz Ciorga,Christian Wolf,Andreas Einwanger,Martin Utz,Dieter Schuh,Dieter Weiss###
(88178, 88179)
 We report on a local spin valve effect observed unambiguously in lateralall-semiconductor all-electrical spin injection devices, employingp<missing VAR>-(Ga,Mn)As/n<missing VAR>-GaAs Esaki diode structures as spin aligning contacts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 30, 'Ohm', 2]

(Ge)
###Electrical spin injection and transport in Germanium|Yi Zhou,Wei Han,Li-Te Chang,Faxian Xiu,Minsheng Wang,Michael Oehme,Inga A. Fischer,Joerg Schulze,Roland. K. Kawakami,Kang L. Wang###
(88355, 88357)
 We report the first experimental demonstration of electrical spin injection,transport and detection in bulk germanium (Ge).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 225, 'K', 1]

Ge
###Electrical spin injection and transport in Germanium|Yi Zhou,Wei Han,Li-Te Chang,Faxian Xiu,Minsheng Wang,Michael Oehme,Inga A. Fischer,Joerg Schulze,Roland. K. Kawakami,Kang L. Wang###
(88375, 88375)
 The non-local magnetoresistancein n<missing VAR>-type Ge is observable up to 225K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 225, 'K', 0]

Ge
###Electrical spin injection and transport in Germanium|Yi Zhou,Wei Han,Li-Te Chang,Faxian Xiu,Minsheng Wang,Michael Oehme,Inga A. Fischer,Joerg Schulze,Roland. K. Kawakami,Kang L. Wang###
(88412, 88412)
 Our results indicate that the spinrelaxation rate in the n<missing VAR>-type Ge is closely related to the momentum scatteringrate, which is consistent with the predicted Elliot-Yafet spin relaxationmechanism for Ge.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 225, 'K', 1]

Ge
###Electrical spin injection and transport in Germanium|Yi Zhou,Wei Han,Li-Te Chang,Faxian Xiu,Minsheng Wang,Michael Oehme,Inga A. Fischer,Joerg Schulze,Roland. K. Kawakami,Kang L. Wang###
(88457, 88457)
 Our results indicate that the spinrelaxation rate in the n<missing VAR>-type Ge is closely related to the momentum scatteringrate, which is consistent with the predicted Elliot-Yafet spin relaxationmechanism for Ge.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 225, 'K', 1]

Ge
###Electrical spin injection and transport in Germanium|Yi Zhou,Wei Han,Li-Te Chang,Faxian Xiu,Minsheng Wang,Michael Oehme,Inga A. Fischer,Joerg Schulze,Roland. K. Kawakami,Kang L. Wang###
(88489, 88489)
 The bias dependence of the nonlocal magnetoresistance and thespin lifetime in n<missing VAR>-type Ge is also investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 225, 'K', 2]

In
###Chiral Anomaly and Classical Negative Magnetoresistance of Weyl Metals|D. T. Son,B. Z. Spivak###
(88620, 88620)
 In this casethe system can support a new type of plasma waves.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(NiFe)
###Observation of magnetocapacitance in ferromagnetic nanowires|Kulothungasagaran Narayanapillai,Mahdi Jamali,Hyunsoo Yang###
(88745, 88748)
 The authors have investigated magnetic domain wall induced capacitancevariation as a tool for the detection of magnetic reversal in magneticnanowires for in-plane (NiFe) and out-of-plane (Co/Pd) magnetizationconfigurations.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pd
###Observation of magnetocapacitance in ferromagnetic nanowires|Kulothungasagaran Narayanapillai,Mahdi Jamali,Hyunsoo Yang###
(88761, 88761)
 The authors have investigated magnetic domain wall induced capacitancevariation as a tool for the detection of magnetic reversal in magneticnanowires for in-plane (NiFe) and out-of-plane (Co/Pd) magnetizationconfigurations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Interaction effects and transport properties of Pt capped Co nanoparticles|A. Ludwig,L. Agudo,G. Eggeler,A. Ludwig,A. D. Wieck,O. Petracic###
(88877, 88877)
Interaction effects and transport properties of Pt capped Co nanoparticles.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Interaction effects and transport properties of Pt capped Co nanoparticles|A. Ludwig,L. Agudo,G. Eggeler,A. Ludwig,A. D. Wieck,O. Petracic###
(88881, 88881)
Interaction effects and transport properties of Pt capped Co nanoparticles.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Interaction effects and transport properties of Pt capped Co nanoparticles|A. Ludwig,L. Agudo,G. Eggeler,A. Ludwig,A. D. Wieck,O. Petracic###
(88902, 88902)
 We studied the magnetic and transport properties of Co nanoparticles (NPs)being capped with varying amounts of Pt.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Interaction effects and transport properties of Pt capped Co nanoparticles|A. Ludwig,L. Agudo,G. Eggeler,A. Ludwig,A. D. Wieck,O. Petracic###
(88907, 88907)
 We studied the magnetic and transport properties of Co nanoparticles (NPs)being capped with varying amounts of Pt.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Interaction effects and transport properties of Pt capped Co nanoparticles|A. Ludwig,L. Agudo,G. Eggeler,A. Ludwig,A. D. Wieck,O. Petracic###
(88924, 88924)
 We studied the magnetic and transport properties of Co nanoparticles (NPs)being capped with varying amounts of Pt.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Interaction effects and transport properties of Pt capped Co nanoparticles|A. Ludwig,L. Agudo,G. Eggeler,A. Ludwig,A. D. Wieck,O. Petracic###
(88967, 88967)
 Beside field and temperature dependentmagnetization measurements we performed delta-M<missing VAR> measurements to study themagnetic interactions between the Co NPs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Interaction effects and transport properties of Pt capped Co nanoparticles|A. Ludwig,L. Agudo,G. Eggeler,A. Ludwig,A. D. Wieck,O. Petracic###
(88969, 88969)
 Beside field and temperature dependentmagnetization measurements we performed delta-M<missing VAR> measurements to study themagnetic interactions between the Co NPs.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Interaction effects and transport properties of Pt capped Co nanoparticles|A. Ludwig,L. Agudo,G. Eggeler,A. Ludwig,A. D. Wieck,O. Petracic###
(89009, 89009)
 We observe a transition fromdemagnetizing towards magnetizing interactions between the particles for anincreasing amount of Pt capping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PtY3Fe5O12
###Spin Hall Magnetoresistance Induced by a Non-Equilibrium Proximity Effect|H. Nakayama,M. Althammer,Y. -T. Chen,K. Uchida,Y. Kajiwara,D. Kikuchi,T. Ohtani,S. Geprägs,M. Opel,S. Takahashi,R. Gross,G. E. W. Bauer,S. T. B. Goennenwein,E. Saitoh###
(89077, 89083)
 We report anisotropic magnetoresistance in PtY3Fe5O12 bilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23809523809523808,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.047619047619047616,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin Hall Magnetoresistance Induced by a Non-Equilibrium Proximity Effect|H. Nakayama,M. Althammer,Y. -T. Chen,K. Uchida,Y. Kajiwara,D. Kikuchi,T. Ohtani,S. Geprägs,M. Opel,S. Takahashi,R. Gross,G. E. W. Bauer,S. T. B. Goennenwein,E. Saitoh###
(89088, 89088)
 In spite ofY3Fe5O12 being a very good electrical insulator, the resistance of the Pt layerreflects its magnetization direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Y3Fe5O12
###Spin Hall Magnetoresistance Induced by a Non-Equilibrium Proximity Effect|H. Nakayama,M. Althammer,Y. -T. Chen,K. Uchida,Y. Kajiwara,D. Kikuchi,T. Ohtani,S. Geprägs,M. Opel,S. Takahashi,R. Gross,G. E. W. Bauer,S. T. B. Goennenwein,E. Saitoh###
(89095, 89100)
 In spite ofY3Fe5O12 being a very good electrical insulator, the resistance of the Pt layerreflects its magnetization direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Spin Hall Magnetoresistance Induced by a Non-Equilibrium Proximity Effect|H. Nakayama,M. Althammer,Y. -T. Chen,K. Uchida,Y. Kajiwara,D. Kikuchi,T. Ohtani,S. Geprägs,M. Opel,S. Takahashi,R. Gross,G. E. W. Bauer,S. T. B. Goennenwein,E. Saitoh###
(89123, 89123)
 In spite ofY3Fe5O12 being a very good electrical insulator, the resistance of the Pt layerreflects its magnetization direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Spin Hall Magnetoresistance Induced by a Non-Equilibrium Proximity Effect|H. Nakayama,M. Althammer,Y. -T. Chen,K. Uchida,Y. Kajiwara,D. Kikuchi,T. Ohtani,S. Geprägs,M. Opel,S. Takahashi,R. Gross,G. E. W. Bauer,S. T. B. Goennenwein,E. Saitoh###
(89149, 89149)
 The effect persists even when a Cu layeris inserted between Pt and Y3Fe5O12, excluding the contribution of inducedequilibrium magnetization at the interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Spin Hall Magnetoresistance Induced by a Non-Equilibrium Proximity Effect|H. Nakayama,M. Althammer,Y. -T. Chen,K. Uchida,Y. Kajiwara,D. Kikuchi,T. Ohtani,S. Geprägs,M. Opel,S. Takahashi,R. Gross,G. E. W. Bauer,S. T. B. Goennenwein,E. Saitoh###
(89160, 89160)
 The effect persists even when a Cu layeris inserted between Pt and Y3Fe5O12, excluding the contribution of inducedequilibrium magnetization at the interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Y3Fe5O12
###Spin Hall Magnetoresistance Induced by a Non-Equilibrium Proximity Effect|H. Nakayama,M. Althammer,Y. -T. Chen,K. Uchida,Y. Kajiwara,D. Kikuchi,T. Ohtani,S. Geprägs,M. Opel,S. Takahashi,R. Gross,G. E. W. Bauer,S. T. B. Goennenwein,E. Saitoh###
(89164, 89169)
 The effect persists even when a Cu layeris inserted between Pt and Y3Fe5O12, excluding the contribution of inducedequilibrium magnetization at the interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Giant magnetoresistance for ensembles of ferromagnetic granules in variable range hopping conductivity regime|V. I. Kozub,A. V. Shumilin###
(89365, 89365)
It is shown that the resulting magnetoresistance can be significantly largerthan the standard giant magnetoresistance in Fe-N-Fe-N.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Giant magnetoresistance for ensembles of ferromagnetic granules in variable range hopping conductivity regime|V. I. Kozub,A. V. Shumilin###
(89367, 89367)
It is shown that the resulting magnetoresistance can be significantly largerthan the standard giant magnetoresistance in Fe-N-Fe-N.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Giant magnetoresistance for ensembles of ferromagnetic granules in variable range hopping conductivity regime|V. I. Kozub,A. V. Shumilin###
(89369, 89369)
It is shown that the resulting magnetoresistance can be significantly largerthan the standard giant magnetoresistance in Fe-N-Fe-N.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Giant magnetoresistance for ensembles of ferromagnetic granules in variable range hopping conductivity regime|V. I. Kozub,A. V. Shumilin###
(89371, 89371)
It is shown that the resulting magnetoresistance can be significantly largerthan the standard giant magnetoresistance in Fe-N-Fe-N.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs/AlGaAs
###Linear polarization study of microwave-radiation-induced magnetoresistance oscillations: Comparison of power dependence to theory|Tianyu Ye,Jesus Inarrea,W. Wegscheider,R. G. Mani###
(89903, 89908)
 We present an experimental study of the microwave power and the linearpolarization angle dependence of the microwave-induced magnetoresistanceoscillations in the high-mobility GaAs/AlGaAs two-dimensional electron system.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

GdNiC2
###Field induced suppression of charge density wave in GdNiC$_2$|Kamil K. Kolincio,Karolina Górnicka,Michał J. Winiarski,Judyta Strychalska - Nowak,Tomasz Klimczuk###
(90058, 90061)
Field induced suppression of charge density wave in GdNiC2.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 20, 'K', 2]

GdNiC2
###Field induced suppression of charge density wave in GdNiC$_2$|Kamil K. Kolincio,Karolina Górnicka,Michał J. Winiarski,Judyta Strychalska - Nowak,Tomasz Klimczuk###
(90091, 90094)
 We report the specific heat, magnetic, magnetotransport and galvanomagneticproperties of polycrystalline GdNiC2.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 20, 'K', 1]

In
###Field induced suppression of charge density wave in GdNiC$_2$|Kamil K. Kolincio,Karolina Górnicka,Michał J. Winiarski,Judyta Strychalska - Nowak,Tomasz Klimczuk###
(90097, 90097)
 In the intermediate temperature regionabove T<missing VAR>N  20 K, we observe large negative magnetoresistance due to Zeemansplitting of the electronic bands and partial destruction of a charge densitywave ground state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 20, 'K', 0]

N
###Field induced suppression of charge density wave in GdNiC$_2$|Kamil K. Kolincio,Karolina Górnicka,Michał J. Winiarski,Judyta Strychalska - Nowak,Tomasz Klimczuk###
(90111, 90111)
 In the intermediate temperature regionabove T<missing VAR>N  20 K, we observe large negative magnetoresistance due to Zeemansplitting of the electronic bands and partial destruction of a charge densitywave ground state.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 20, 'K', 0]

C
###Field induced suppression of charge density wave in GdNiC$_2$|Kamil K. Kolincio,Karolina Górnicka,Michał J. Winiarski,Judyta Strychalska - Nowak,Tomasz Klimczuk###
(90225, 90225)
 Our magnetoresistance and Hall measurements show that at lowtemperatures a magnetic field induced transformation from antiferromagneticorder to a metamagnetic phase results in the partial suppression of the CD<missing VAR>W.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 20, 'K', 1]

W
###Field induced suppression of charge density wave in GdNiC$_2$|Kamil K. Kolincio,Karolina Górnicka,Michał J. Winiarski,Judyta Strychalska - Nowak,Tomasz Klimczuk###
(90227, 90227)
 Our magnetoresistance and Hall measurements show that at lowtemperatures a magnetic field induced transformation from antiferromagneticorder to a metamagnetic phase results in the partial suppression of the CD<missing VAR>W.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 20, 'K', 1]

In
###Magnetoresistance in an electronic cavity coupled to one-dimensional systems|Chengyu Yan,Sanjeev Kumar,Patrick See,Ian Farrer,David Ritchie,J. P. Griffiths,G. A. C. Jones,Michael Pepper###
(90446, 90446)
 In this work, we performed magnetoresistance measurement in a hybrid systemconsisting of an arc-shaped quantum point contact (Q<missing VAR>PC) and a flat, rectangularQ<missing VAR>PC, both of which together form an electronic cavity between them.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Magnetoresistance in an electronic cavity coupled to one-dimensional systems|Chengyu Yan,Sanjeev Kumar,Patrick See,Ian Farrer,David Ritchie,J. P. Griffiths,G. A. C. Jones,Michael Pepper###
(90489, 90489)
 In this work, we performed magnetoresistance measurement in a hybrid systemconsisting of an arc-shaped quantum point contact (Q<missing VAR>PC) and a flat, rectangularQ<missing VAR>PC, both of which together form an electronic cavity between them.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PC
###Magnetoresistance in an electronic cavity coupled to one-dimensional systems|Chengyu Yan,Sanjeev Kumar,Patrick See,Ian Farrer,David Ritchie,J. P. Griffiths,G. A. C. Jones,Michael Pepper###
(90503, 90504)
 In this work, we performed magnetoresistance measurement in a hybrid systemconsisting of an arc-shaped quantum point contact (Q<missing VAR>PC) and a flat, rectangularQ<missing VAR>PC, both of which together form an electronic cavity between them.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PC
###Magnetoresistance in an electronic cavity coupled to one-dimensional systems|Chengyu Yan,Sanjeev Kumar,Patrick See,Ian Farrer,David Ritchie,J. P. Griffiths,G. A. C. Jones,Michael Pepper###
(90573, 90574)
 The resultshighlight a transition between collimation-induced resistance dip to amagnetoresistance peak as the strength of coupling between the Q<missing VAR>PC and theelectronic cavity was increased.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(GaSb)2
###Spin-polarized electron transport in the high-pressure ferromagnetic phases (GaSb)$_2$M (M=Cr,Mn)|A. A. Pronin,M. V. Kondrin,V. R. Gizatullin,O. A. Sazanova,A. G. Lyapin,S. V. Popova###
(91016, 91020)
Spin-polarized electron transport in the high-pressure ferromagnetic phases (GaSb)2M<missing VAR> (M<missing VAR>Cr,Mn).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr
###Spin-polarized electron transport in the high-pressure ferromagnetic phases (GaSb)$_2$M (M=Cr,Mn)|A. A. Pronin,M. V. Kondrin,V. R. Gizatullin,O. A. Sazanova,A. G. Lyapin,S. V. Popova###
(91025, 91025)
Spin-polarized electron transport in the high-pressure ferromagnetic phases (GaSb)2M<missing VAR> (M<missing VAR>Cr,Mn).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Spin-polarized electron transport in the high-pressure ferromagnetic phases (GaSb)$_2$M (M=Cr,Mn)|A. A. Pronin,M. V. Kondrin,V. R. Gizatullin,O. A. Sazanova,A. G. Lyapin,S. V. Popova###
(91027, 91027)
Spin-polarized electron transport in the high-pressure ferromagnetic phases (GaSb)2M<missing VAR> (M<missing VAR>Cr,Mn).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(GaSb)2
###Spin-polarized electron transport in the high-pressure ferromagnetic phases (GaSb)$_2$M (M=Cr,Mn)|A. A. Pronin,M. V. Kondrin,V. R. Gizatullin,O. A. Sazanova,A. G. Lyapin,S. V. Popova###
(91056, 91060)
 For the first time magnetrotransport of the ferromagnetic high-pressurephases of (GaSb)2M<missing VAR> (M<missing VAR>Cr,Mn) was measured.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr
###Spin-polarized electron transport in the high-pressure ferromagnetic phases (GaSb)$_2$M (M=Cr,Mn)|A. A. Pronin,M. V. Kondrin,V. R. Gizatullin,O. A. Sazanova,A. G. Lyapin,S. V. Popova###
(91065, 91065)
 For the first time magnetrotransport of the ferromagnetic high-pressurephases of (GaSb)2M<missing VAR> (M<missing VAR>Cr,Mn) was measured.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Spin-polarized electron transport in the high-pressure ferromagnetic phases (GaSb)$_2$M (M=Cr,Mn)|A. A. Pronin,M. V. Kondrin,V. R. Gizatullin,O. A. Sazanova,A. G. Lyapin,S. V. Popova###
(91067, 91067)
 For the first time magnetrotransport of the ferromagnetic high-pressurephases of (GaSb)2M<missing VAR> (M<missing VAR>Cr,Mn) was measured.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Insulator/metal phase transition and colossal magnetoresistance in holographic model|Rong-Gen Cai,Run-Qiu Yang###
(91264, 91264)
 Within massive gravity, we construct a gravity dual for insulator/metal phasetransition and colossal magnetoresistance (CMR) effect found in some manganeseoxides materials.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Insulator/metal phase transition and colossal magnetoresistance in holographic model|Rong-Gen Cai,Run-Qiu Yang###
(91285, 91285)
 In heavy graviton limit, a remarkablemagnetic-field-sensitive D<missing VAR>C resistivity peak appears at the Curie temperature,where an insulator/metal phase transition happens and the magnetoresistance isscaled with the square of field-induced magnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Insulator/metal phase transition and colossal magnetoresistance in holographic model|Rong-Gen Cai,Run-Qiu Yang###
(91306, 91306)
 In heavy graviton limit, a remarkablemagnetic-field-sensitive D<missing VAR>C resistivity peak appears at the Curie temperature,where an insulator/metal phase transition happens and the magnetoresistance isscaled with the square of field-induced magnetization.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cd3As2
###Magnetotransport in Dirac metals: chiral magnetic effect and quantum oscillations|Gustavo M. Monteiro,Alexander G. Abanov,Dmitri E. Kharzeev###
(91595, 91598)
 We discuss the relevance of obtained results torecent measurements on rm Cd3As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO/EuS
###Spin- and Symmetry-Filtering Combined Tunnel Magnetoresistance through Epitaxial MgO/EuS Tunnel Barriers|Zhiwei Gao,Yihang Yang,Fen Liu,Qian Xue,Guo-Xing Miao###
(91628, 91632)
Spin- and Symmetry-Filtering Combined Tunnel Magnetoresistance through Epitaxial MgO/EuS Tunnel Barriers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[55.0, 64, '%', 2],[59.0, 4.2, 'K', 2]

FeCo/MgO/EuS
###Spin- and Symmetry-Filtering Combined Tunnel Magnetoresistance through Epitaxial MgO/EuS Tunnel Barriers|Zhiwei Gao,Yihang Yang,Fen Liu,Qian Xue,Guo-Xing Miao###
(91653, 91660)
 We created epitaxial magnetic tunnel junctions of FeCo/MgO/EuS on MgObuffered Si (100).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[27.0, 64, '%', 1],[31.0, 4.2, 'K', 1]

MgO
###Spin- and Symmetry-Filtering Combined Tunnel Magnetoresistance through Epitaxial MgO/EuS Tunnel Barriers|Zhiwei Gao,Yihang Yang,Fen Liu,Qian Xue,Guo-Xing Miao###
(91664, 91665)
 We created epitaxial magnetic tunnel junctions of FeCo/MgO/EuS on MgObuffered Si (100).
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 64, '%', 1],[26.0, 4.2, 'K', 1]

Si
###Spin- and Symmetry-Filtering Combined Tunnel Magnetoresistance through Epitaxial MgO/EuS Tunnel Barriers|Zhiwei Gao,Yihang Yang,Fen Liu,Qian Xue,Guo-Xing Miao###
(91670, 91670)
 We created epitaxial magnetic tunnel junctions of FeCo/MgO/EuS on MgObuffered Si (100).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 64, '%', 1],[21.0, 4.2, 'K', 1]

MgO
###Spin- and Symmetry-Filtering Combined Tunnel Magnetoresistance through Epitaxial MgO/EuS Tunnel Barriers|Zhiwei Gao,Yihang Yang,Fen Liu,Qian Xue,Guo-Xing Miao###
(91713, 91714)
 Anunexpected fast drop of magnetoresistance was recorded for MgO thickness above1 nm, which is attributed to the forced nonspecular conductance across the EuSconduction band minimum located at the X<missing VAR> point, rather than the desired Delta1conductance centered around the Gamma point.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 64, '%', 1],[22.0, 4.2, 'K', 1]

EuS
###Spin- and Symmetry-Filtering Combined Tunnel Magnetoresistance through Epitaxial MgO/EuS Tunnel Barriers|Zhiwei Gao,Yihang Yang,Fen Liu,Qian Xue,Guo-Xing Miao###
(91746, 91747)
 Anunexpected fast drop of magnetoresistance was recorded for MgO thickness above1 nm, which is attributed to the forced nonspecular conductance across the EuSconduction band minimum located at the X<missing VAR> point, rather than the desired Delta1conductance centered around the Gamma point.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 64, '%', 1],[55.0, 4.2, 'K', 1]

MoTe2
###Origin of magnetoresistance suppression in thin $γ$-MoTe$_2$|Shazhou Zhong,Archana Tiwari,George Nichols,Fangchu Chen,Xuan Luo,Yuping Sun,Adam W. Tsen###
(91813, 91815)
Origin of magnetoresistance suppression in thin -MoTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Origin of magnetoresistance suppression in thin $γ$-MoTe$_2$|Shazhou Zhong,Archana Tiwari,George Nichols,Fangchu Chen,Xuan Luo,Yuping Sun,Adam W. Tsen###
(91870, 91871)
 We use both classical magnetotransport and quantum oscillation measurementsto study the thickness evolution of the extremely large magnetoresistance (XMR)material and type-II Weyl semimetal candidate, gamma-MoTe2, protectedfrom oxidation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoTe2
###Origin of magnetoresistance suppression in thin $γ$-MoTe$_2$|Shazhou Zhong,Archana Tiwari,George Nichols,Fangchu Chen,Xuan Luo,Yuping Sun,Adam W. Tsen###
(91882, 91884)
 We use both classical magnetotransport and quantum oscillation measurementsto study the thickness evolution of the extremely large magnetoresistance (XMR)material and type-II Weyl semimetal candidate, gamma-MoTe2, protectedfrom oxidation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Quantizing momentum transport in bilayer graphene|Muhammad Imran###
(92043, 92043)
 In quantizing magnetic field the momentum current passesthrough the guiding centers of cyclotron orbits.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Quantizing momentum transport in bilayer graphene|Muhammad Imran###
(92075, 92075)
 In this study we derive thequantized Hall viscosity of bilayer graphene that is the next topologicalfeature after the quantum Hall effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Gigantic negative magnetoresistance of nanoheterostructures described by the Fivaz model|P. V. Gorskyi###
(92264, 92264)
 In sodoing, in the Fivaz model it becomes apparent to a larger extent than in thecase of a parabolic, though anisotropic, conduction band.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Transport in indium-decorated graphene|U. Chandni,Erik A. Henriksen,J. P. Eisenstein###
(92503, 92503)
 Notably, a positivemagnetoresistance is observed over a wide density range after In doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(Pt)
###Gate-Controlled Magnetoresistance of a Paramagnetic Insulator|Platinum Interface|L. Liang,J. Shan,Q. H. Chen,J. M. Lu,G. R. Blake,T. T. M. Palstra,G. E. W. Bauer,B. J. van Wees,J. T. Ye###
(92782, 92784)
 We report an electric field-induced in-plane magnetoresistance of anatomically flat paramagnetic insulatorplatinum (Pt) interface at lowtemperatures with an ionic liquid gate.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnSi
###Electronic transport in high magnetic fields of thin film MnSi|Nico Steinki,David Schroeter,Niels Wächter,Dirk Menzel,Hans Werner Schumacher,Ilya Sheikin,Stefan Süllow###
(92920, 92921)
Electronic transport in high magnetic fields of thin film MnSi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnSi
###Electronic transport in high magnetic fields of thin film MnSi|Nico Steinki,David Schroeter,Niels Wächter,Dirk Menzel,Hans Werner Schumacher,Ilya Sheikin,Stefan Süllow###
(92944, 92945)
 We present a study of the magnetoresistivity of thin film MnSi in highmagnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnSi
###Electronic transport in high magnetic fields of thin film MnSi|Nico Steinki,David Schroeter,Niels Wächter,Dirk Menzel,Hans Werner Schumacher,Ilya Sheikin,Stefan Süllow###
(93085, 93086)
 We propose that these reflect adifference of the spin fluctuation spectra in thin film and bulk material MnSi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F/N/F
###Understanding spintronics in F/N/F structures through a mechanical analogy|Ya. B. Bazaliy###
(93103, 93107)
Understanding spintronics in F/N/F structures through a mechanical analogy.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

In
###Understanding spintronics in F/N/F structures through a mechanical analogy|Ya. B. Bazaliy###
(93205, 93205)
 In particular,it provides an understanding of the sign-changing behavior of spin torque inasymmetric F/N/F spin valves.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F/N/F
###Understanding spintronics in F/N/F structures through a mechanical analogy|Ya. B. Bazaliy###
(93240, 93244)
 In particular,it provides an understanding of the sign-changing behavior of spin torque inasymmetric F/N/F spin valves.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

N
###Understanding spintronics in F/N/F structures through a mechanical analogy|Ya. B. Bazaliy###
(93293, 93293)
 It further helps to uncover the physical reasonbehind the singular behavior of spin magnetoresistance in devices withultra-thin N-layers.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Positive magnetoresistance induced by hydrodynamic fluctuations in chiral media|Noriyuki Sogabe,Naoki Yamamoto,Yi Yin###
(93536, 93536)
 We analyze the combined effects of hydrodynamic fluctuations and chiralmagnetic effect (CME) for a chiral medium in the presence of a backgroundmagnetic field.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Positive magnetoresistance induced by hydrodynamic fluctuations in chiral media|Noriyuki Sogabe,Naoki Yamamoto,Yi Yin###
(93603, 93603)
 Based on the recently developed non-equilibrium effective fieldtheory, we show fluctuations give rise to a CME-related positive contributionto magnetoresistance, while the early studies without accounting for thefluctuations find a CME-related negative magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Positive magnetoresistance induced by hydrodynamic fluctuations in chiral media|Noriyuki Sogabe,Naoki Yamamoto,Yi Yin###
(93642, 93642)
 Based on the recently developed non-equilibrium effective fieldtheory, we show fluctuations give rise to a CME-related positive contributionto magnetoresistance, while the early studies without accounting for thefluctuations find a CME-related negative magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Positive magnetoresistance induced by hydrodynamic fluctuations in chiral media|Noriyuki Sogabe,Naoki Yamamoto,Yi Yin###
(93653, 93653)
 At zero axialrelaxation rate, the fluctuations contribute to the transverse conductivity inaddition to the longitudinal one.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZnTe
###Spin-polarized transport in magnetic tunnel junctions with ZnTe barriers|W. G. Wang,C. Ni,A. Ozbay,L. R. Shah,X. Fan,X. M. Kou,E. R. Nowak,J. Q. Xiao###
(93912, 93913)
Spin-polarized transport in magnetic tunnel junctions with ZnTe barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZnTe
###Spin-polarized transport in magnetic tunnel junctions with ZnTe barriers|W. G. Wang,C. Ni,A. Ozbay,L. R. Shah,X. Fan,X. M. Kou,E. R. Nowak,J. Q. Xiao###
(93934, 93935)
 Magnetic tunnel junctions with wide band gap semiconductor ZnTe barrier werefabricated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/ZnTe/Fe
###Spin-polarized transport in magnetic tunnel junctions with ZnTe barriers|W. G. Wang,C. Ni,A. Ozbay,L. R. Shah,X. Fan,X. M. Kou,E. R. Nowak,J. Q. Xiao###
(93970, 93975)
 A very low barrier height and sizable magnetoresistance wereobserved in the Fe/ZnTe/Fe junctions at room temperature.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

I
###Spin-polarized transport in magnetic tunnel junctions with ZnTe barriers|W. G. Wang,C. Ni,A. Ozbay,L. R. Shah,X. Fan,X. M. Kou,E. R. Nowak,J. Q. Xiao###
(93990, 93990)
 The nonlinear I-Vcharacteristic curve confirmed the observed magnetoresistance is due tospin-dependent tunneling effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Spin-polarized transport in magnetic tunnel junctions with ZnTe barriers|W. G. Wang,C. Ni,A. Ozbay,L. R. Shah,X. Fan,X. M. Kou,E. R. Nowak,J. Q. Xiao###
(93992, 93992)
 The nonlinear I-Vcharacteristic curve confirmed the observed magnetoresistance is due tospin-dependent tunneling effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Mean-free path effects in magnetoresistance of ferromagnetic nanocontacts|A. N. Useinov,L. R. Tagirov,R. G. Deminov,Y. Zhou,G. Pan###
(94515, 94515)
 The trial calculations of themagnetoresistance with material parameters close to those for the Mumetal-Niheterocontacts agree satisfactorily with the available experimental data.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/GaAs/Fe
###Anisotropic tunneling magnetoresistance and tunneling anisotropic magnetoresistance: spin-orbit coupling in magnetic tunnel junctions|Alex Matos-Abiague,Jaroslav Fabian###
(94989, 94994)
 Modelcalculations for Fe/GaAs/Fe tunnel junctions are presented.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

SiO2(Co)/GaAs
###Giant magnetoresistance in semiconductor / granular film heterostructures with cobalt nanoparticles|L. V. Lutsev,A. I. Stognij,N. N. Novitskii###
(95106, 95114)
 We have studied the electron transport in SiO2(Co)/GaAs andSiO2(Co)/Si heterostructures, where the SiO2(Co) structure is thegranular SiO2 film with Co nanoparticles.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[196.0, 71, 'at', 4],[257.0, 4, '%', 6]

SiO2(Co)/Si
###Giant magnetoresistance in semiconductor / granular film heterostructures with cobalt nanoparticles|L. V. Lutsev,A. I. Stognij,N. N. Novitskii###
(95119, 95126)
 We have studied the electron transport in SiO2(Co)/GaAs andSiO2(Co)/Si heterostructures, where the SiO2(Co) structure is thegranular SiO2 film with Co nanoparticles.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[184.0, 71, 'at', 4],[245.0, 4, '%', 6]

SiO2(Co)
###Giant magnetoresistance in semiconductor / granular film heterostructures with cobalt nanoparticles|L. V. Lutsev,A. I. Stognij,N. N. Novitskii###
(95135, 95140)
 We have studied the electron transport in SiO2(Co)/GaAs andSiO2(Co)/Si heterostructures, where the SiO2(Co) structure is thegranular SiO2 film with Co nanoparticles.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[170.0, 71, 'at', 4],[231.0, 4, '%', 6]

SiO2
###Giant magnetoresistance in semiconductor / granular film heterostructures with cobalt nanoparticles|L. V. Lutsev,A. I. Stognij,N. N. Novitskii###
(95151, 95153)
 We have studied the electron transport in SiO2(Co)/GaAs andSiO2(Co)/Si heterostructures, where the SiO2(Co) structure is thegranular SiO2 film with Co nanoparticles.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 71, 'at', 4],[218.0, 4, '%', 6]

Co
###Giant magnetoresistance in semiconductor / granular film heterostructures with cobalt nanoparticles|L. V. Lutsev,A. I. Stognij,N. N. Novitskii###
(95159, 95159)
 We have studied the electron transport in SiO2(Co)/GaAs andSiO2(Co)/Si heterostructures, where the SiO2(Co) structure is thegranular SiO2 film with Co nanoparticles.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 71, 'at', 4],[212.0, 4, '%', 6]

In
###Giant magnetoresistance in semiconductor / granular film heterostructures with cobalt nanoparticles|L. V. Lutsev,A. I. Stognij,N. N. Novitskii###
(95164, 95164)
 In SiO2(Co)/GaAsheterostructures giant magnetoresistance effect is observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 71, 'at', 3],[207.0, 4, '%', 5]

SiO2(Co)/GaAs
###Giant magnetoresistance in semiconductor / granular film heterostructures with cobalt nanoparticles|L. V. Lutsev,A. I. Stognij,N. N. Novitskii###
(95166, 95174)
 In SiO2(Co)/GaAsheterostructures giant magnetoresistance effect is observed.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[136.0, 71, 'at', 3],[197.0, 4, '%', 5]

GaAs
###Giant magnetoresistance in semiconductor / granular film heterostructures with cobalt nanoparticles|L. V. Lutsev,A. I. Stognij,N. N. Novitskii###
(95228, 95229)
 The effect haspositive values, is expressed, when electrons are injected from the granularfilm into the GaAs semiconductor, and has the temperature-peak type character.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 71, 'at', 2],[142.0, 4, '%', 4]

Co
###Giant magnetoresistance in semiconductor / granular film heterostructures with cobalt nanoparticles|L. V. Lutsev,A. I. Stognij,N. N. Novitskii###
(95268, 95268)
The temperature location of the effect depends on the Co concentration and canbe shifted by the applied electrical field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 71, 'at', 1],[103.0, 4, '%', 3]

SiO2(Co)/GaAs
###Giant magnetoresistance in semiconductor / granular film heterostructures with cobalt nanoparticles|L. V. Lutsev,A. I. Stognij,N. N. Novitskii###
(95296, 95304)
 For the SiO2(Co)/GaAsheterostructure with 71 at.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[6.0, 71, 'at', 0],[67.0, 4, '%', 2]

Co
###Giant magnetoresistance in semiconductor / granular film heterostructures with cobalt nanoparticles|L. V. Lutsev,A. I. Stognij,N. N. Novitskii###
(95314, 95314)
 Co the magnetoresistance reaches 1000 (105 %)at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 71, 'at', 1],[57.0, 4, '%', 1]

SiO2(Co)/Si
###Giant magnetoresistance in semiconductor / granular film heterostructures with cobalt nanoparticles|L. V. Lutsev,A. I. Stognij,N. N. Novitskii###
(95348, 95355)
 On the contrary, for SiO2(Co)/Si heterostructuresmagnetoresistance values are very small (4%) and for SiO2(Co) films themagnetoresistance has an opposite value.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[38.0, 71, 'at', 2],[16.0, 4, '%', 0]

SiO2(Co)
###Giant magnetoresistance in semiconductor / granular film heterostructures with cobalt nanoparticles|L. V. Lutsev,A. I. Stognij,N. N. Novitskii###
(95379, 95384)
 On the contrary, for SiO2(Co)/Si heterostructuresmagnetoresistance values are very small (4%) and for SiO2(Co) films themagnetoresistance has an opposite value.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 71, 'at', 2],[8.0, 4, '%', 0]

SiO2(Co)/GaAs
###Giant magnetoresistance in semiconductor / granular film heterostructures with cobalt nanoparticles|L. V. Lutsev,A. I. Stognij,N. N. Novitskii###
(95417, 95425)
 High values of the magnetoresistanceeffect in SiO2(Co)/GaAs heterostructures have been explained bymagnetic-field-controlled process of impact ionization in the vicinity of thespin-dependent potential barrier formed in the semiconductor near theinterface.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[107.0, 71, 'at', 3],[46.0, 4, '%', 1]

Co
###Giant magnetoresistance in semiconductor / granular film heterostructures with cobalt nanoparticles|L. V. Lutsev,A. I. Stognij,N. N. Novitskii###
(95631, 95631)
 Thespin-dependent potential barrier is due to the exchange interaction betweenelectrons in the accumulation electron layer in the semiconductor andd<missing VAR>-electrons of Co.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[321.0, 71, 'at', 6],[260.0, 4, '%', 4]

In
###Magnetoconductivity in Weyl semimetals: Effect of chemical potential and temperature|Xiao Xiao,K. T. Law,P. A. Lee###
(95703, 95703)
 In the presenceof the charged impurities, the linear magnetoresistance can happen when thecharge carriers are mainly from the zeroth (n<missing VAR>0) Landau level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[251.0, 1.0, 'a', 5],[327.0, 2.0, 'In', 5]

B
###Magnetoconductivity in Weyl semimetals: Effect of chemical potential and temperature|Xiao Xiao,K. T. Law,P. A. Lee###
(95929, 95929)
 Our analysis indicates thatthe deviation from the linear magnetoresistance is mainly due to the deviationof the longitudinal conductivity from the 1/B behavior.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 1.0, 'a', 1],[101.0, 2.0, 'In', 1]

B
###Magnetoconductivity in Weyl semimetals: Effect of chemical potential and temperature|Xiao Xiao,K. T. Law,P. A. Lee###
(96048, 96048)
 We found twoimportant features of the self-energy approximation 1. a dramatic jump ofsigmaxx, when the n<missing VAR>1 Landau level begins to contribute chargecarriers, which is the beginning point of the middle-field regime, whendecreasing the external magnetic field from high field; 2. In the low-fieldregime sigmaxx shows a B-5/3 behavior and results themagnetoresistance rhoxx to show a B1/3 behavior.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 1.0, 'a', 0],[18.0, 2.0, 'In', 0]

B1
###Magnetoconductivity in Weyl semimetals: Effect of chemical potential and temperature|Xiao Xiao,K. T. Law,P. A. Lee###
(96074, 96075)
 We found twoimportant features of the self-energy approximation 1. a dramatic jump ofsigmaxx, when the n<missing VAR>1 Landau level begins to contribute chargecarriers, which is the beginning point of the middle-field regime, whendecreasing the external magnetic field from high field; 2. In the low-fieldregime sigmaxx shows a B-5/3 behavior and results themagnetoresistance rhoxx to show a B1/3 behavior.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 1.0, 'a', 0],[44.0, 2.0, 'In', 0]

Eu0.99La0.01TiO3
###Colossal magnetoresistance over a wide temperature range in Eu0.99La0.01TiO3|Km Rubi,R. Mahendiran###
(96183, 96189)
Colossal magnetoresistance over a wide temperature range in Eu0.99La0.01TiO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.002,0,0,0,0,0,0.198,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 2.5, 'K', 3],[96.0, 1, '%', 3],[181.0, 2.5, 'K', 5],[198.0, 6, 'kOe', 5],[217.0, 7, 'T', 5],[224.0, 50, 'K', 6],[262.0, 7, 'T', 6],[273.0, 4, 'f', 7],[326.0, 4, 'f', 7],[344.0, 3, 'd', 7]

EuTiO3
###Colossal magnetoresistance over a wide temperature range in Eu0.99La0.01TiO3|Km Rubi,R. Mahendiran###
(96215, 96218)
 We report occurrence of large magnetoresistance in lightly dopedantiferromagnetic paraelectric EuTiO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 2.5, 'K', 2],[67.0, 1, '%', 2],[152.0, 2.5, 'K', 4],[169.0, 6, 'kOe', 4],[188.0, 7, 'T', 4],[195.0, 50, 'K', 5],[233.0, 7, 'T', 5],[244.0, 4, 'f', 6],[297.0, 4, 'f', 6],[315.0, 3, 'd', 6]

TiO3
###Colossal magnetoresistance over a wide temperature range in Eu0.99La0.01TiO3|Km Rubi,R. Mahendiran###
(96238, 96240)
 Reports of magnetoresistance inrare-earth titanates (R<missing VAR>TiO3 oxides) are very scarce because they are highlyinsulating at low temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 2.5, 'K', 1],[45.0, 1, '%', 1],[130.0, 2.5, 'K', 3],[147.0, 6, 'kOe', 3],[166.0, 7, 'T', 3],[173.0, 50, 'K', 4],[211.0, 7, 'T', 4],[222.0, 4, 'f', 5],[275.0, 4, 'f', 5],[293.0, 3, 'd', 5]

EuTiO3
###Colossal magnetoresistance over a wide temperature range in Eu0.99La0.01TiO3|Km Rubi,R. Mahendiran###
(96269, 96272)
 EuTiO3 is an insulator at 2.5 K and 1% La3substitution for Eu2 lowers the resistivity over five orders of magnitude at2.5 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 2.5, 'K', 0],[13.0, 1, '%', 0],[98.0, 2.5, 'K', 2],[115.0, 6, 'kOe', 2],[134.0, 7, 'T', 2],[141.0, 50, 'K', 3],[179.0, 7, 'T', 3],[190.0, 4, 'f', 4],[243.0, 4, 'f', 4],[261.0, 3, 'd', 4]

La3
###Colossal magnetoresistance over a wide temperature range in Eu0.99La0.01TiO3|Km Rubi,R. Mahendiran###
(96288, 96289)
 EuTiO3 is an insulator at 2.5 K and 1% La3substitution for Eu2 lowers the resistivity over five orders of magnitude at2.5 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 2.5, 'K', 0],[3.0, 1, '%', 0],[81.0, 2.5, 'K', 2],[98.0, 6, 'kOe', 2],[117.0, 7, 'T', 2],[124.0, 50, 'K', 3],[162.0, 7, 'T', 3],[173.0, 4, 'f', 4],[226.0, 4, 'f', 4],[244.0, 3, 'd', 4]

Eu2
###Colossal magnetoresistance over a wide temperature range in Eu0.99La0.01TiO3|Km Rubi,R. Mahendiran###
(96296, 96297)
 EuTiO3 is an insulator at 2.5 K and 1% La3substitution for Eu2 lowers the resistivity over five orders of magnitude at2.5 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 2.5, 'K', 0],[11.0, 1, '%', 0],[73.0, 2.5, 'K', 2],[90.0, 6, 'kOe', 2],[109.0, 7, 'T', 2],[116.0, 50, 'K', 3],[154.0, 7, 'T', 3],[165.0, 4, 'f', 4],[218.0, 4, 'f', 4],[236.0, 3, 'd', 4]

K
###Colossal magnetoresistance over a wide temperature range in Eu0.99La0.01TiO3|Km Rubi,R. Mahendiran###
(96320, 96320)
 EuTiO3 is an insulator at 2.5 K and 1% La3substitution for Eu2 lowers the resistivity over five orders of magnitude at2.5 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 2.5, 'K', 0],[35.0, 1, '%', 0],[50.0, 2.5, 'K', 2],[67.0, 6, 'kOe', 2],[86.0, 7, 'T', 2],[93.0, 50, 'K', 3],[131.0, 7, 'T', 3],[142.0, 4, 'f', 4],[195.0, 4, 'f', 4],[213.0, 3, 'd', 4]

Eu0.99La0.01TiO3
###Colossal magnetoresistance over a wide temperature range in Eu0.99La0.01TiO3|Km Rubi,R. Mahendiran###
(96331, 96337)
 It is shown that Eu0.99La0.01TiO3 which is antiferromagnetic below T<missing VAR>5.43 K shows large magnetoresistance over a wide temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.002,0,0,0,0,0,0.198,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 2.5, 'K', 1],[46.0, 1, '%', 1],[33.0, 2.5, 'K', 1],[50.0, 6, 'kOe', 1],[69.0, 7, 'T', 1],[76.0, 50, 'K', 2],[114.0, 7, 'T', 2],[125.0, 4, 'f', 3],[178.0, 4, 'f', 3],[196.0, 3, 'd', 3]

K
###Colossal magnetoresistance over a wide temperature range in Eu0.99La0.01TiO3|Km Rubi,R. Mahendiran###
(96352, 96352)
 It is shown that Eu0.99La0.01TiO3 which is antiferromagnetic below T<missing VAR>5.43 K shows large magnetoresistance over a wide temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 2.5, 'K', 1],[67.0, 1, '%', 1],[18.0, 2.5, 'K', 1],[35.0, 6, 'kOe', 1],[54.0, 7, 'T', 1],[61.0, 50, 'K', 2],[99.0, 7, 'T', 2],[110.0, 4, 'f', 3],[163.0, 4, 'f', 3],[181.0, 3, 'd', 3]

At
###Colossal magnetoresistance over a wide temperature range in Eu0.99La0.01TiO3|Km Rubi,R. Mahendiran###
(96369, 96369)
 At 2.5 K,magnetoresistance is -42 % for H  6 kOe and it increases to -75 % for H  7 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 2.5, 'K', 2],[84.0, 1, '%', 2],[1.0, 2.5, 'K', 0],[18.0, 6, 'kOe', 0],[37.0, 7, 'T', 0],[44.0, 50, 'K', 1],[82.0, 7, 'T', 1],[93.0, 4, 'f', 2],[146.0, 4, 'f', 2],[164.0, 3, 'd', 2]

H
###Colossal magnetoresistance over a wide temperature range in Eu0.99La0.01TiO3|Km Rubi,R. Mahendiran###
(96385, 96385)
 At 2.5 K,magnetoresistance is -42 % for H  6 kOe and it increases to -75 % for H  7 T.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 2.5, 'K', 2],[100.0, 1, '%', 2],[15.0, 2.5, 'K', 0],[2.0, 6, 'kOe', 0],[21.0, 7, 'T', 0],[28.0, 50, 'K', 1],[66.0, 7, 'T', 1],[77.0, 4, 'f', 2],[130.0, 4, 'f', 2],[148.0, 3, 'd', 2]

H
###Colossal magnetoresistance over a wide temperature range in Eu0.99La0.01TiO3|Km Rubi,R. Mahendiran###
(96404, 96404)
 At 2.5 K,magnetoresistance is -42 % for H  6 kOe and it increases to -75 % for H  7 T.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 2.5, 'K', 2],[119.0, 1, '%', 2],[34.0, 2.5, 'K', 0],[17.0, 6, 'kOe', 0],[2.0, 7, 'T', 0],[9.0, 50, 'K', 1],[47.0, 7, 'T', 1],[58.0, 4, 'f', 2],[111.0, 4, 'f', 2],[129.0, 3, 'd', 2]

H
###Colossal magnetoresistance over a wide temperature range in Eu0.99La0.01TiO3|Km Rubi,R. Mahendiran###
(96449, 96449)
Even at 50 K which is ten times higher than Neel temperature, magnetoresistanceis very significant (-20 % for H  7 T).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[168.0, 2.5, 'K', 3],[164.0, 1, '%', 3],[79.0, 2.5, 'K', 1],[62.0, 6, 'kOe', 1],[43.0, 7, 'T', 1],[36.0, 50, 'K', 0],[2.0, 7, 'T', 0],[13.0, 4, 'f', 1],[66.0, 4, 'f', 1],[84.0, 3, 'd', 1]

Eu2
###Colossal magnetoresistance over a wide temperature range in Eu0.99La0.01TiO3|Km Rubi,R. Mahendiran###
(96468, 96469)
 It is suggested that 4f spins on Eu2ion is strongly exchange coupled to doped electron in Ti-3d<missing VAR> band via f-dinteration and field-induced suppression of 4f spin fluctuations decreasespin-disorder scattering experienced by 3d electrons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[187.0, 2.5, 'K', 4],[183.0, 1, '%', 4],[98.0, 2.5, 'K', 2],[81.0, 6, 'kOe', 2],[62.0, 7, 'T', 2],[55.0, 50, 'K', 1],[17.0, 7, 'T', 1],[6.0, 4, 'f', 0],[46.0, 4, 'f', 0],[64.0, 3, 'd', 0]

Ti
###Colossal magnetoresistance over a wide temperature range in Eu0.99La0.01TiO3|Km Rubi,R. Mahendiran###
(96490, 96490)
 It is suggested that 4f spins on Eu2ion is strongly exchange coupled to doped electron in Ti-3d<missing VAR> band via f-dinteration and field-induced suppression of 4f spin fluctuations decreasespin-disorder scattering experienced by 3d electrons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[209.0, 2.5, 'K', 4],[205.0, 1, '%', 4],[120.0, 2.5, 'K', 2],[103.0, 6, 'kOe', 2],[84.0, 7, 'T', 2],[77.0, 50, 'K', 1],[39.0, 7, 'T', 1],[28.0, 4, 'f', 0],[25.0, 4, 'f', 0],[43.0, 3, 'd', 0]

In
###Colossal magnetoresistance over a wide temperature range in Eu0.99La0.01TiO3|Km Rubi,R. Mahendiran###
(96538, 96538)
 In view of our results,it will be interesting to investigate magnetoresistance of other rare earthtitanates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[257.0, 2.5, 'K', 5],[253.0, 1, '%', 5],[168.0, 2.5, 'K', 3],[151.0, 6, 'kOe', 3],[132.0, 7, 'T', 3],[125.0, 50, 'K', 2],[87.0, 7, 'T', 2],[76.0, 4, 'f', 1],[23.0, 4, 'f', 1],[5.0, 3, 'd', 1]

PtBi2
###Fermi Surface and Carriers Compensation of pyrite-type PtBi$_{2}$ Revealed by Quantum Oscillations|Lingxiao Zhao,Liangcai Xu,Huakun Zuo,Xuming Wu,Guoying Gao,Zengwei Zhu###
(96600, 96602)
Fermi Surface and Carriers Compensation of pyrite-type PtBi2 Revealed by Quantum Oscillations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PtBi2
###Fermi Surface and Carriers Compensation of pyrite-type PtBi$_{2}$ Revealed by Quantum Oscillations|Lingxiao Zhao,Liangcai Xu,Huakun Zuo,Xuming Wu,Guoying Gao,Zengwei Zhu###
(96704, 96706)
Here we present a detailed study of the angle-dependent Shubnikov -de Haaseffect on large magnetoresistance material pyrite-type PtBi2, which allowsus to experimentally reconstruct its Fermi-surface structure and extract thephysical properties of each pocket.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C4
###Fermi Surface and Carriers Compensation of pyrite-type PtBi$_{2}$ Revealed by Quantum Oscillations|Lingxiao Zhao,Liangcai Xu,Huakun Zuo,Xuming Wu,Guoying Gao,Zengwei Zhu###
(96792, 96793)
 We find its Fermi surface contains fourtypes of pockets in the Brillouin zone three ellipsoid-like hole pocketsalpha with C4 symmetry located on the edges (M<missing VAR> points), one intricateelectron pocket beta merged from four ellipsoids along [111] located on thecorners (R<missing VAR> points), two smooth and cambered octahedrons gamma (electron) anddelta (hole) on the center (Gamma point).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PtBi2
###Fermi Surface and Carriers Compensation of pyrite-type PtBi$_{2}$ Revealed by Quantum Oscillations|Lingxiao Zhao,Liangcai Xu,Huakun Zuo,Xuming Wu,Guoying Gao,Zengwei Zhu###
(97006, 97008)
 We concludethat the compensation is the main mechanism for the large non-saturatingmagnetoresistance in pyrite-type PtBi2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni80Fe20
###Spin mediated enhanced negative magnetoresistance in Ni80Fe20 and p-silicon bilayer|Paul C Lou,Sandeep Kumar###
(97161, 97164)
Spin mediated enhanced negative magnetoresistance in Ni80Fe20 and p<missing VAR>-silicon bilayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 2.5, '%', 2],[100.0, 1.3, '%', 2],[140.0, 3, 'T', 2]

In
###Spin mediated enhanced negative magnetoresistance in Ni80Fe20 and p-silicon bilayer|Paul C Lou,Sandeep Kumar###
(97175, 97175)
 In this work, we present an experimental study of spin mediated enhancednegative magnetoresistance in Ni80Fe20 (50 nm)/p<missing VAR>-Si (350 nm) bilayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 2.5, '%', 1],[89.0, 1.3, '%', 1],[129.0, 3, 'T', 1]

Ni80Fe20
###Spin mediated enhanced negative magnetoresistance in Ni80Fe20 and p-silicon bilayer|Paul C Lou,Sandeep Kumar###
(97207, 97210)
 In this work, we present an experimental study of spin mediated enhancednegative magnetoresistance in Ni80Fe20 (50 nm)/p<missing VAR>-Si (350 nm) bilayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 2.5, '%', 1],[54.0, 1.3, '%', 1],[94.0, 3, 'T', 1]

Si
###Spin mediated enhanced negative magnetoresistance in Ni80Fe20 and p-silicon bilayer|Paul C Lou,Sandeep Kumar###
(97220, 97220)
 In this work, we present an experimental study of spin mediated enhancednegative magnetoresistance in Ni80Fe20 (50 nm)/p<missing VAR>-Si (350 nm) bilayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 2.5, '%', 1],[44.0, 1.3, '%', 1],[84.0, 3, 'T', 1]

Ni80Fe20
###Spin mediated enhanced negative magnetoresistance in Ni80Fe20 and p-silicon bilayer|Paul C Lou,Sandeep Kumar###
(97269, 97272)
 Theresistance measurement shows a reduction of 2.5% for the bilayer specimen ascompared to 1.3% for Ni80Fe20 (50 nm) on oxide specimen for an out-of-planeapplied magnetic field of 3T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 2.5, '%', 0],[5.0, 1.3, '%', 0],[32.0, 3, 'T', 0]

In
###Spin mediated enhanced negative magnetoresistance in Ni80Fe20 and p-silicon bilayer|Paul C Lou,Sandeep Kumar###
(97307, 97307)
 In the Ni80Fe20-only film, the negativemagnetoresistance behavior is attributed to anisotropic magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 2.5, '%', 1],[43.0, 1.3, '%', 1],[3.0, 3, 'T', 1]

Ni80Fe20
###Spin mediated enhanced negative magnetoresistance in Ni80Fe20 and p-silicon bilayer|Paul C Lou,Sandeep Kumar###
(97311, 97314)
 In the Ni80Fe20-only film, the negativemagnetoresistance behavior is attributed to anisotropic magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 2.5, '%', 1],[47.0, 1.3, '%', 1],[7.0, 3, 'T', 1]

V2
###Spin mediated enhanced negative magnetoresistance in Ni80Fe20 and p-silicon bilayer|Paul C Lou,Sandeep Kumar###
(97425, 97426)
 We use V2omega and V3omega measurement as a function ofmagnetic field and angular rotation of magnetic field in direction normal toelectric current to elucidate the spin-Hall effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 2.5, '%', 4],[161.0, 1.3, '%', 4],[121.0, 3, 'T', 4]

V3
###Spin mediated enhanced negative magnetoresistance in Ni80Fe20 and p-silicon bilayer|Paul C Lou,Sandeep Kumar###
(97431, 97432)
 We use V2omega and V3omega measurement as a function ofmagnetic field and angular rotation of magnetic field in direction normal toelectric current to elucidate the spin-Hall effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[185.0, 2.5, '%', 4],[167.0, 1.3, '%', 4],[127.0, 3, 'T', 4]

V2
###Spin mediated enhanced negative magnetoresistance in Ni80Fe20 and p-silicon bilayer|Paul C Lou,Sandeep Kumar###
(97513, 97514)
 The angular rotation ofmagnetic field shows a sinusoidal behavior for both V2omega and V3omega,which is attributed to the spin phonon interactions resulting from thespin-Hall effect mediated spin polarization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[267.0, 2.5, '%', 5],[249.0, 1.3, '%', 5],[209.0, 3, 'T', 5]

V3
###Spin mediated enhanced negative magnetoresistance in Ni80Fe20 and p-silicon bilayer|Paul C Lou,Sandeep Kumar###
(97519, 97520)
 The angular rotation ofmagnetic field shows a sinusoidal behavior for both V2omega and V3omega,which is attributed to the spin phonon interactions resulting from thespin-Hall effect mediated spin polarization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[273.0, 2.5, '%', 5],[255.0, 1.3, '%', 5],[215.0, 3, 'T', 5]

DyPdBi
###Negative longitudinal magnetoresistance as a sign of a possible chiral magnetic anomaly in the half-Heusler antiferromagnet DyPdBi|Orest Pavlosiuk,Dariusz Kaczorowski,Piotr Wiśniewski###
(97644, 97646)
Negative longitudinal magnetoresistance as a sign of a possible chiral magnetic anomaly in the half-Heusler antiferromagnet DyPdBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, -80, '%', 4],[182.0, -60, '%', 4],[187.0, 10, 'K', 4],[191.0, 14, 'T', 4]

DyPdBi
###Negative longitudinal magnetoresistance as a sign of a possible chiral magnetic anomaly in the half-Heusler antiferromagnet DyPdBi|Orest Pavlosiuk,Dariusz Kaczorowski,Piotr Wiśniewski###
(97663, 97665)
 Magnetotransport investigation of a half-Heusler antiferromagnet DyPdBirevealed hallmark features of Weyl semimetal huge negative longitudinalmagnetoresistance and planar Hall effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, -80, '%', 3],[163.0, -60, '%', 3],[168.0, 10, 'K', 3],[172.0, 14, 'T', 3]

DyPdBi
###Negative longitudinal magnetoresistance as a sign of a possible chiral magnetic anomaly in the half-Heusler antiferromagnet DyPdBi|Orest Pavlosiuk,Dariusz Kaczorowski,Piotr Wiśniewski###
(97750, 97752)
Magnetoresistance (MR) of single crystals of DyPdBi is very pronounced.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, -80, '%', 1],[76.0, -60, '%', 1],[81.0, 10, 'K', 1],[85.0, 14, 'T', 1]

In
###Negative longitudinal magnetoresistance as a sign of a possible chiral magnetic anomaly in the half-Heusler antiferromagnet DyPdBi|Orest Pavlosiuk,Dariusz Kaczorowski,Piotr Wiśniewski###
(97761, 97761)
 Inmagnetic field longitudinal to electrical current direction it reaches -80% andits relative difference with respect to that measured in transverse field(expressed as anisotropic magnetoresistance) is extremely strong -60% at 10Kand 14 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, -80, '%', 0],[67.0, -60, '%', 0],[72.0, 10, 'K', 0],[76.0, 14, 'T', 0]

DyPdBi
###Negative longitudinal magnetoresistance as a sign of a possible chiral magnetic anomaly in the half-Heusler antiferromagnet DyPdBi|Orest Pavlosiuk,Dariusz Kaczorowski,Piotr Wiśniewski###
(97850, 97852)
 The planar Hall effect in DyPdBi depends on temperature and magneticfield in non-monotonous way, which has not been previously reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, -80, '%', 1],[22.0, -60, '%', 1],[17.0, 10, 'K', 1],[13.0, 14, 'T', 1]

Sm0.5Ca0.25Sr0.25MnO3
###Huge magnetoresistance and ultra-sharp metamagnetic transition in polycrystalline ${Sm_{0.5}Ca_{0.25}Sr_{0.25}MnO_3}$|Sanjib Banik,Kalipada Das,Tapas Paramanik,N. P. Lalla,Biswarup Satpati,Kalpataru Pradhan,I. Das###
(98056, 98064)
Huge magnetoresistance and ultra-sharp metamagnetic transition in polycrystalline Sm0.5Ca0.25Sr0.25MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.05,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.05,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[269.0, 10, 'K', 5],[282.0, 13, '%', 5],[288.0, 30, 'kOe', 5],[300.0, 15, '%', 5]

In
###Huge magnetoresistance and ultra-sharp metamagnetic transition in polycrystalline ${Sm_{0.5}Ca_{0.25}Sr_{0.25}MnO_3}$|Sanjib Banik,Kalipada Das,Tapas Paramanik,N. P. Lalla,Biswarup Satpati,Kalpataru Pradhan,I. Das###
(98246, 98246)
 In thiswork, we report a huge colossal magnetoresistance along with the ultra-sharpmetamagnetic transition in half doped Sm0.5Ca0.25Sr0.25MnO3manganite compound by suitably tuning the volume fraction of the competingphases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 10, 'K', 1],[100.0, 13, '%', 1],[106.0, 30, 'kOe', 1],[118.0, 15, '%', 1]

Sm0.5Ca0.25Sr0.25MnO3
###Huge magnetoresistance and ultra-sharp metamagnetic transition in polycrystalline ${Sm_{0.5}Ca_{0.25}Sr_{0.25}MnO_3}$|Sanjib Banik,Kalipada Das,Tapas Paramanik,N. P. Lalla,Biswarup Satpati,Kalpataru Pradhan,I. Das###
(98287, 98295)
 In thiswork, we report a huge colossal magnetoresistance along with the ultra-sharpmetamagnetic transition in half doped Sm0.5Ca0.25Sr0.25MnO3manganite compound by suitably tuning the volume fraction of the competingphases.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.05,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.05,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 10, 'K', 1],[51.0, 13, '%', 1],[57.0, 30, 'kOe', 1],[69.0, 15, '%', 1]

C
###Huge magnetoresistance and ultra-sharp metamagnetic transition in polycrystalline ${Sm_{0.5}Ca_{0.25}Sr_{0.25}MnO_3}$|Sanjib Banik,Kalipada Das,Tapas Paramanik,N. P. Lalla,Biswarup Satpati,Kalpataru Pradhan,I. Das###
(98455, 98455)
 Using model Hamiltoniancalculations we have shown that the inhomogeneous disorder, deduced fromtunneling electron microscopy, suppresses the CE<missing VAR>-type phase and seeds theferromagnetic metal in an external magnetic field.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 10, 'K', 1],[109.0, 13, '%', 1],[103.0, 30, 'kOe', 1],[91.0, 15, '%', 1]

Mo8Ga41
###Linear magnetoresistance with a universal energy scale in a strong-coupling superconductor|W. Zhang,Y. J. Hu,C. N. Kuo,S. T. Kuo,Yue-Wen Fang,Kwing To Lai,X. Y. Liu,K. Y. Yip,D. Sun,F. F. Balakirev,C. S. Lue,Hanghui Chen,Swee K. Goh###
(98646, 98649)
 Here, we reportour discovery of a nonsaturating, linear magnetoresistance in Mo8Ga41,a nearly isotropic strong electron-phonon coupling superconductor with alinear-in-temperature resistivity from the transition temperature to sim55K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8367346938775511,0,0,0,0,0,0,0,0,0,0,0.16326530612244897,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Linear magnetoresistance with a universal energy scale in a strong-coupling superconductor|W. Zhang,Y. J. Hu,C. N. Kuo,S. T. Kuo,Yue-Wen Fang,Kwing To Lai,X. Y. Liu,K. Y. Yip,D. Sun,F. F. Balakirev,C. S. Lue,Hanghui Chen,Swee K. Goh###
(98696, 98696)
 Here, we reportour discovery of a nonsaturating, linear magnetoresistance in Mo8Ga41,a nearly isotropic strong electron-phonon coupling superconductor with alinear-in-temperature resistivity from the transition temperature to sim55K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La2-xSr
###Linear magnetoresistance with a universal energy scale in a strong-coupling superconductor|W. Zhang,Y. J. Hu,C. N. Kuo,S. T. Kuo,Yue-Wen Fang,Kwing To Lai,X. Y. Liu,K. Y. Yip,D. Sun,F. F. Balakirev,C. S. Lue,Hanghui Chen,Swee K. Goh###
(98774, 98778)
 Our datasets areremarkably similar to magnetoresistance data of the optimally dopedLa2-xSrx<missing VAR>CuO4, despite the clearly different crystal and electronicstructures, and the apparent absence of quantum critical physics inMo8Ga41.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

CuO4
###Linear magnetoresistance with a universal energy scale in a strong-coupling superconductor|W. Zhang,Y. J. Hu,C. N. Kuo,S. T. Kuo,Yue-Wen Fang,Kwing To Lai,X. Y. Liu,K. Y. Yip,D. Sun,F. F. Balakirev,C. S. Lue,Hanghui Chen,Swee K. Goh###
(98780, 98782)
 Our datasets areremarkably similar to magnetoresistance data of the optimally dopedLa2-xSrx<missing VAR>CuO4, despite the clearly different crystal and electronicstructures, and the apparent absence of quantum critical physics inMo8Ga41.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mo8Ga41
###Linear magnetoresistance with a universal energy scale in a strong-coupling superconductor|W. Zhang,Y. J. Hu,C. N. Kuo,S. T. Kuo,Yue-Wen Fang,Kwing To Lai,X. Y. Liu,K. Y. Yip,D. Sun,F. F. Balakirev,C. S. Lue,Hanghui Chen,Swee K. Goh###
(98822, 98825)
 Our datasets areremarkably similar to magnetoresistance data of the optimally dopedLa2-xSrx<missing VAR>CuO4, despite the clearly different crystal and electronicstructures, and the apparent absence of quantum critical physics inMo8Ga41.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8367346938775511,0,0,0,0,0,0,0,0,0,0,0.16326530612244897,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mo8Ga41
###Linear magnetoresistance with a universal energy scale in a strong-coupling superconductor|W. Zhang,Y. J. Hu,C. N. Kuo,S. T. Kuo,Yue-Wen Fang,Kwing To Lai,X. Y. Liu,K. Y. Yip,D. Sun,F. F. Balakirev,C. S. Lue,Hanghui Chen,Swee K. Goh###
(98875, 98878)
 A new empirical scaling formula is developed, which is able tocapture the key features of the low-temperature magnetoresistance data ofMo8Ga41, as well as the data of La2-xSrx<missing VAR>CuO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8367346938775511,0,0,0,0,0,0,0,0,0,0,0.16326530612244897,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La2-xSr
###Linear magnetoresistance with a universal energy scale in a strong-coupling superconductor|W. Zhang,Y. J. Hu,C. N. Kuo,S. T. Kuo,Yue-Wen Fang,Kwing To Lai,X. Y. Liu,K. Y. Yip,D. Sun,F. F. Balakirev,C. S. Lue,Hanghui Chen,Swee K. Goh###
(98893, 98897)
 A new empirical scaling formula is developed, which is able tocapture the key features of the low-temperature magnetoresistance data ofMo8Ga41, as well as the data of La2-xSrx<missing VAR>CuO4.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

CuO4
###Linear magnetoresistance with a universal energy scale in a strong-coupling superconductor|W. Zhang,Y. J. Hu,C. N. Kuo,S. T. Kuo,Yue-Wen Fang,Kwing To Lai,X. Y. Liu,K. Y. Yip,D. Sun,F. F. Balakirev,C. S. Lue,Hanghui Chen,Swee K. Goh###
(98899, 98901)
 A new empirical scaling formula is developed, which is able tocapture the key features of the low-temperature magnetoresistance data ofMo8Ga41, as well as the data of La2-xSrx<missing VAR>CuO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Non-local magnon-based transport in yttrium iron garnet/platinum heterostructures at high temperatures|Richard Schlitz,Sergey Granovsky,Sebastian T. B. Goennenwein###
(99037, 99037)
Here, we investigate the magnetoresistive response of yttrium irongarnet/platinum heterostructures from room temperature to beyond the Curietemperature T<missing VAR>mathrmC, YIG<missing VAR> approx 560,mathrmK of the ferrimagneticinsulator.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 560, ',', 0],[55.0, 300, ',', 1],[108.0, 500, ',', 2],[191.0, 2, ',', 3],[224.0, 420, ',', 4],[367.0, 470, ',', 6]

YI
###Non-local magnon-based transport in yttrium iron garnet/platinum heterostructures at high temperatures|Richard Schlitz,Sergey Granovsky,Sebastian T. B. Goennenwein###
(99040, 99041)
Here, we investigate the magnetoresistive response of yttrium irongarnet/platinum heterostructures from room temperature to beyond the Curietemperature T<missing VAR>mathrmC, YIG<missing VAR> approx 560,mathrmK of the ferrimagneticinsulator.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 560, ',', 0],[51.0, 300, ',', 1],[104.0, 500, ',', 2],[187.0, 2, ',', 3],[220.0, 420, ',', 4],[363.0, 470, ',', 6]

K
###Non-local magnon-based transport in yttrium iron garnet/platinum heterostructures at high temperatures|Richard Schlitz,Sergey Granovsky,Sebastian T. B. Goennenwein###
(99049, 99049)
Here, we investigate the magnetoresistive response of yttrium irongarnet/platinum heterostructures from room temperature to beyond the Curietemperature T<missing VAR>mathrmC, YIG<missing VAR> approx 560,mathrmK of the ferrimagneticinsulator.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 560, ',', 0],[43.0, 300, ',', 1],[96.0, 500, ',', 2],[179.0, 2, ',', 3],[212.0, 420, ',', 4],[355.0, 470, ',', 6]

K
###Non-local magnon-based transport in yttrium iron garnet/platinum heterostructures at high temperatures|Richard Schlitz,Sergey Granovsky,Sebastian T. B. Goennenwein###
(99095, 99095)
 We find that the amplitude of the (local) spin Hallmagnetoresistance decreases monotonically from 300,mathrmK towardsT<missing VAR>mathrmC, mimicking the evolution of the saturation magnetization ofyttrium iron garnet.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 560, ',', 1],[3.0, 300, ',', 0],[50.0, 500, ',', 1],[133.0, 2, ',', 2],[166.0, 420, ',', 3],[309.0, 470, ',', 5]

C
###Non-local magnon-based transport in yttrium iron garnet/platinum heterostructures at high temperatures|Richard Schlitz,Sergey Granovsky,Sebastian T. B. Goennenwein###
(99102, 99102)
 We find that the amplitude of the (local) spin Hallmagnetoresistance decreases monotonically from 300,mathrmK towardsT<missing VAR>mathrmC, mimicking the evolution of the saturation magnetization ofyttrium iron garnet.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 560, ',', 1],[10.0, 300, ',', 0],[43.0, 500, ',', 1],[126.0, 2, ',', 2],[159.0, 420, ',', 3],[302.0, 470, ',', 5]

K
###Non-local magnon-based transport in yttrium iron garnet/platinum heterostructures at high temperatures|Richard Schlitz,Sergey Granovsky,Sebastian T. B. Goennenwein###
(99148, 99148)
 Interestingly, the spin Hall magnetoresistance vanishesaround 500,mathrmK, well below T<missing VAR>mathrmC, which we attribute to theformation of a parasitic interface layer by interdiffusion.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 560, ',', 2],[56.0, 300, ',', 1],[3.0, 500, ',', 0],[80.0, 2, ',', 1],[113.0, 420, ',', 2],[256.0, 470, ',', 4]

C
###Non-local magnon-based transport in yttrium iron garnet/platinum heterostructures at high temperatures|Richard Schlitz,Sergey Granovsky,Sebastian T. B. Goennenwein###
(99157, 99157)
 Interestingly, the spin Hall magnetoresistance vanishesaround 500,mathrmK, well below T<missing VAR>mathrmC, which we attribute to theformation of a parasitic interface layer by interdiffusion.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 560, ',', 2],[65.0, 300, ',', 1],[12.0, 500, ',', 0],[71.0, 2, ',', 1],[104.0, 420, ',', 2],[247.0, 470, ',', 4]

K
###Non-local magnon-based transport in yttrium iron garnet/platinum heterostructures at high temperatures|Richard Schlitz,Sergey Granovsky,Sebastian T. B. Goennenwein###
(99264, 99264)
 The exponentdecreases gradually to alpha sim 1/2 at around 420,mathrmK, beforethe non-local magnetoresistance vanishes rapidly at a similar temperature asthe spin Hall magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[218.0, 560, ',', 4],[172.0, 300, ',', 3],[119.0, 500, ',', 2],[36.0, 2, ',', 1],[3.0, 420, ',', 0],[140.0, 470, ',', 2]

K
###Non-local magnon-based transport in yttrium iron garnet/platinum heterostructures at high temperatures|Richard Schlitz,Sergey Granovsky,Sebastian T. B. Goennenwein###
(99407, 99407)
 Finally, we find a magnetic field independent offsetvoltage in the non-local signal for T<missing VAR> > 470,mathrmK which we associatewith electronic leakage currents through the normally insulating yttrium irongarnet film.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[361.0, 560, ',', 6],[315.0, 300, ',', 5],[262.0, 500, ',', 4],[179.0, 2, ',', 3],[146.0, 420, ',', 2],[3.0, 470, ',', 0]

B
###On universal butterfly and antisymmetric magnetoresistances|H. T. Wu,Tai Min,Z. X. Guo,X. R. Wang###
(99505, 99505)
 Butterfly magnetoresistance (BMR) and antisymmetric magnetoresistance (ASMR)are about a butterfly-cross curve and a curve with one peak and one valley whena magnetic field is swept up and down along a fixed direction.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###On universal butterfly and antisymmetric magnetoresistances|H. T. Wu,Tai Min,Z. X. Guo,X. R. Wang###
(99518, 99518)
 Butterfly magnetoresistance (BMR) and antisymmetric magnetoresistance (ASMR)are about a butterfly-cross curve and a curve with one peak and one valley whena magnetic field is swept up and down along a fixed direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###On universal butterfly and antisymmetric magnetoresistances|H. T. Wu,Tai Min,Z. X. Guo,X. R. Wang###
(99618, 99618)
 Other than theparallelogram-shaped magnetoresistance-curve (MR-curve) often observed inmagnetic memory devices, BMR and ASMR are two ubiquitous types of MR-curvesobserved in diversified magnetic systems, including van der Waals materials,strongly correlated systems, and traditional magnets.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###On universal butterfly and antisymmetric magnetoresistances|H. T. Wu,Tai Min,Z. X. Guo,X. R. Wang###
(99625, 99625)
 Other than theparallelogram-shaped magnetoresistance-curve (MR-curve) often observed inmagnetic memory devices, BMR and ASMR are two ubiquitous types of MR-curvesobserved in diversified magnetic systems, including van der Waals materials,strongly correlated systems, and traditional magnets.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###On universal butterfly and antisymmetric magnetoresistances|H. T. Wu,Tai Min,Z. X. Guo,X. R. Wang###
(99706, 99706)
 Here, we reveal thegeneral principles and the picture behind the BMR and the ASMR that do notdepend on the detailed mechanisms of magnetoresistance 1) The systems exhibithysteresis loops, common for most magnetic materials with coercivities.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###On universal butterfly and antisymmetric magnetoresistances|H. T. Wu,Tai Min,Z. X. Guo,X. R. Wang###
(99715, 99715)
 Here, we reveal thegeneral principles and the picture behind the BMR and the ASMR that do notdepend on the detailed mechanisms of magnetoresistance 1) The systems exhibithysteresis loops, common for most magnetic materials with coercivities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###On universal butterfly and antisymmetric magnetoresistances|H. T. Wu,Tai Min,Z. X. Guo,X. R. Wang###
(99852, 99852)
 With thegeneralized Ohms<missing VAR> law in magnetic materials, these principles explain why mostBMR appears in the longitudinal resistance measurements and is very rare in theHall resistance measurements.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###On universal butterfly and antisymmetric magnetoresistances|H. T. Wu,Tai Min,Z. X. Guo,X. R. Wang###
(99942, 99942)
 Simple toy models, in which theLandau-Lifshitz-Gilbert equation governs magnetization, are used to demonstratethe principles and explain the appearance and disappearance of BMR in variousexperiments.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Low-field magnetoresistance in GaAs 2D holes|S. J. Papadakis,E. P. De Poortere,H. C. Manoharan,J. B. Yau,M. Shayegan,S. A. Lyon###
(99994, 99995)
Low-field magnetoresistance in GaAs 2D holes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[1.0, 2, 'D', 0],[80.0, -2, ',', 1],[130.0, -2, ',', 2]

GaAs/AlGaAs
###Low-field magnetoresistance in GaAs 2D holes|S. J. Papadakis,E. P. De Poortere,H. C. Manoharan,J. B. Yau,M. Shayegan,S. A. Lyon###
(100026, 100031)
 We report low-field magnetotransport data in two-dimensional hole systems inGaAs/AlGaAs heterostructures and quantum wells, in a large density range, 2.5times 1010 leq p<missing VAR> leq 4.0 times 1011 cm-2, with primary focus onsamples grown on (311)A GaAs substrates.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[30.0, 2, 'D', 1],[44.0, -2, ',', 0],[94.0, -2, ',', 1]

GaAs
###Low-field magnetoresistance in GaAs 2D holes|S. J. Papadakis,E. P. De Poortere,H. C. Manoharan,J. B. Yau,M. Shayegan,S. A. Lyon###
(100099, 100100)
 We report low-field magnetotransport data in two-dimensional hole systems inGaAs/AlGaAs heterostructures and quantum wells, in a large density range, 2.5times 1010 leq p<missing VAR> leq 4.0 times 1011 cm-2, with primary focus onsamples grown on (311)A GaAs substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 2, 'D', 1],[24.0, -2, ',', 0],[25.0, -2, ',', 1]

At
###Low-field magnetoresistance in GaAs 2D holes|S. J. Papadakis,E. P. De Poortere,H. C. Manoharan,J. B. Yau,M. Shayegan,S. A. Lyon###
(100105, 100105)
 At high densities, p<missing VAR> gtrsim 1 times1011 cm-2, we observe a remarkably strong positive magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 2, 'D', 2],[30.0, -2, ',', 1],[20.0, -2, ',', 0]

In
###Non-Markovian Effects on the Two-Dimensional Magnetotransport: Low-field Anomaly in Magnetoresistance|Vadim V. Cheianov,A. P. Dmitriev,V. Yu. Kachorovskii###
(100744, 100744)
 Insome interval of magnetic fields the magnetoresistance is shown to be lineardelta rhoxx/rho sim - omegac<missing VAR> tau  in a good agreement with theexperiment and numerical simulations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 2, ',', 1]

MgB2
###Effect of the four-sheet Fermi surface on magnetoresistivity of MgB2|I. Pallecchi,M. Monni,C. Ferdeghini,V. Ferrando,M. Putti,C. Tarantini,E. Galleani D'Agliano###
(100936, 100938)
Effect of the four-sheet Fermi surface on magnetoresistivity of MgB2.
Featurization terminated normally.
0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgB2
###Effect of the four-sheet Fermi surface on magnetoresistivity of MgB2|I. Pallecchi,M. Monni,C. Ferdeghini,V. Ferrando,M. Putti,C. Tarantini,E. Galleani D'Agliano###
(100957, 100959)
 Recent experimental data of anisotropic magnetoresistivity measured in MgB2films have shown an intriguing behaviour the angular dependence ofmagnetoresistivity changes dramatically with temperature and disorder.
Featurization terminated normally.
0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Effect of the four-sheet Fermi surface on magnetoresistivity of MgB2|I. Pallecchi,M. Monni,C. Ferdeghini,V. Ferrando,M. Putti,C. Tarantini,E. Galleani D'Agliano###
(100998, 100998)
 In orderto explain such phenomenology, in this work, we extend our previous analyses onmultiband transverse magnetoresistivity in magnesium diboride, by calculatingits analytic expression, assuming a constant anisotropic Fermi surface masstensor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Anomalous magnetoresistance effect in nanoengineered material|S. Dickert,D. K. Singh,R. Thantirige,M. T. Tuominen###
(101569, 101569)
 In recent years, the ability to engineer materials at thenanoscale has played a key role in exploring new phenomenon.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 100, 'K', 2],[160.0, 200, 'K', 2]

Co
###Anomalous magnetoresistance effect in nanoengineered material|S. Dickert,D. K. Singh,R. Thantirige,M. T. Tuominen###
(101623, 101623)
 Using a systeminvolving periodic Co dots array in direct contact with a surroundingpolycrystalline Cu film, we report the observation of giant thermal hysteresisand an anomalous oscillatory magnetoresistance behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 100, 'K', 1],[106.0, 200, 'K', 1]

Cu
###Anomalous magnetoresistance effect in nanoengineered material|S. Dickert,D. K. Singh,R. Thantirige,M. T. Tuominen###
(101644, 101644)
 Using a systeminvolving periodic Co dots array in direct contact with a surroundingpolycrystalline Cu film, we report the observation of giant thermal hysteresisand an anomalous oscillatory magnetoresistance behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 100, 'K', 1],[85.0, 200, 'K', 1]

Cu
###Anomalous magnetoresistance effect in nanoengineered material|S. Dickert,D. K. Singh,R. Thantirige,M. T. Tuominen###
(101743, 101743)
 Reducingthe thickness of the Cu film weakens the magnetoresistance oscillation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 100, 'K', 1],[14.0, 200, 'K', 1]

Bi2Te3
###Quantum oscillations with non-zero Berry phase from a complex three dimensional Fermi surface in Bi2Te3|Sourabh Barua,K. P. Rajeev###
(101826, 101829)
Quantum oscillations with non-zero Berry phase from a complex three dimensional Fermi surface in Bi2Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 90, 'degree', 3]

Bi2Te3
###Quantum oscillations with non-zero Berry phase from a complex three dimensional Fermi surface in Bi2Te3|Sourabh Barua,K. P. Rajeev###
(101859, 101862)
 We performed angle dependent magnetoresistance study of a metallic singlecrystal sample of Bi2Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 90, 'degree', 2]

Bi2Te3
###Quantum oscillations with non-zero Berry phase from a complex three dimensional Fermi surface in Bi2Te3|Sourabh Barua,K. P. Rajeev###
(102080, 102083)
 However, the angular dependence of these oscillations suggests a complexthree dimensional Fermi surface as the source of these oscillations, which doesnot exactly conform with the six ellipsoidal model of the Fermi surface ofBi2Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 90, 'degree', 2]

Zn
###Magnetoresistance control in granular Zn/1-x-y/Cd/x/Mn/y/GeAs/2/ nanocomposite ferromagnetic semiconductors|L. Kilanski,I. V. Fedorchenko,M. Górska,A. Ślawska-Waniewska,N. Nedelko,A. Podgórni,A. Avdonin,E. Lahderanta,W. Dobrowolski,A. N. Aronov,S. F. Marenkin###
(102331, 102331)
Magnetoresistance control in granular Zn/1-x-y/Cd/x<missing VAR>/Mn/y<missing VAR>/GeAs/2/ nanocomposite ferromagnetic semiconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 305, 'K', 2],[290.0, 0.85, 'is', 6],[302.0, 25, 'K', 6],[314.0, -32, '%', 6],[322.0, 1.4, 'K', 6],[370.0, 0.12, 'is', 7],[385.0, 50, '%', 7],[400.0, 4.3, 'K', 7]

Cd
###Magnetoresistance control in granular Zn/1-x-y/Cd/x/Mn/y/GeAs/2/ nanocomposite ferromagnetic semiconductors|L. Kilanski,I. V. Fedorchenko,M. Górska,A. Ślawska-Waniewska,N. Nedelko,A. Podgórni,A. Avdonin,E. Lahderanta,W. Dobrowolski,A. N. Aronov,S. F. Marenkin###
(102339, 102339)
Magnetoresistance control in granular Zn/1-x-y/Cd/x<missing VAR>/Mn/y<missing VAR>/GeAs/2/ nanocomposite ferromagnetic semiconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 305, 'K', 2],[282.0, 0.85, 'is', 6],[294.0, 25, 'K', 6],[306.0, -32, '%', 6],[314.0, 1.4, 'K', 6],[362.0, 0.12, 'is', 7],[377.0, 50, '%', 7],[392.0, 4.3, 'K', 7]

Mn
###Magnetoresistance control in granular Zn/1-x-y/Cd/x/Mn/y/GeAs/2/ nanocomposite ferromagnetic semiconductors|L. Kilanski,I. V. Fedorchenko,M. Górska,A. Ślawska-Waniewska,N. Nedelko,A. Podgórni,A. Avdonin,E. Lahderanta,W. Dobrowolski,A. N. Aronov,S. F. Marenkin###
(102343, 102343)
Magnetoresistance control in granular Zn/1-x-y/Cd/x<missing VAR>/Mn/y<missing VAR>/GeAs/2/ nanocomposite ferromagnetic semiconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 305, 'K', 2],[278.0, 0.85, 'is', 6],[290.0, 25, 'K', 6],[302.0, -32, '%', 6],[310.0, 1.4, 'K', 6],[358.0, 0.12, 'is', 7],[373.0, 50, '%', 7],[388.0, 4.3, 'K', 7]

GeAs
###Magnetoresistance control in granular Zn/1-x-y/Cd/x/Mn/y/GeAs/2/ nanocomposite ferromagnetic semiconductors|L. Kilanski,I. V. Fedorchenko,M. Górska,A. Ślawska-Waniewska,N. Nedelko,A. Podgórni,A. Avdonin,E. Lahderanta,W. Dobrowolski,A. N. Aronov,S. F. Marenkin###
(102347, 102348)
Magnetoresistance control in granular Zn/1-x-y/Cd/x<missing VAR>/Mn/y<missing VAR>/GeAs/2/ nanocomposite ferromagnetic semiconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 305, 'K', 2],[273.0, 0.85, 'is', 6],[285.0, 25, 'K', 6],[297.0, -32, '%', 6],[305.0, 1.4, 'K', 6],[353.0, 0.12, 'is', 7],[368.0, 50, '%', 7],[383.0, 4.3, 'K', 7]

Zn
###Magnetoresistance control in granular Zn/1-x-y/Cd/x/Mn/y/GeAs/2/ nanocomposite ferromagnetic semiconductors|L. Kilanski,I. V. Fedorchenko,M. Górska,A. Ślawska-Waniewska,N. Nedelko,A. Podgórni,A. Avdonin,E. Lahderanta,W. Dobrowolski,A. N. Aronov,S. F. Marenkin###
(102382, 102382)
 We present studies of structural, magnetic and electrical properties ofZn/1-x-y/Cd/x<missing VAR>/Mn/y<missing VAR>/GeAs/2/ nanocomposite ferromagnetic semiconductor sampleswith changeable chemical composition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 305, 'K', 1],[239.0, 0.85, 'is', 5],[251.0, 25, 'K', 5],[263.0, -32, '%', 5],[271.0, 1.4, 'K', 5],[319.0, 0.12, 'is', 6],[334.0, 50, '%', 6],[349.0, 4.3, 'K', 6]

Cd
###Magnetoresistance control in granular Zn/1-x-y/Cd/x/Mn/y/GeAs/2/ nanocomposite ferromagnetic semiconductors|L. Kilanski,I. V. Fedorchenko,M. Górska,A. Ślawska-Waniewska,N. Nedelko,A. Podgórni,A. Avdonin,E. Lahderanta,W. Dobrowolski,A. N. Aronov,S. F. Marenkin###
(102390, 102390)
 We present studies of structural, magnetic and electrical properties ofZn/1-x-y/Cd/x<missing VAR>/Mn/y<missing VAR>/GeAs/2/ nanocomposite ferromagnetic semiconductor sampleswith changeable chemical composition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 305, 'K', 1],[231.0, 0.85, 'is', 5],[243.0, 25, 'K', 5],[255.0, -32, '%', 5],[263.0, 1.4, 'K', 5],[311.0, 0.12, 'is', 6],[326.0, 50, '%', 6],[341.0, 4.3, 'K', 6]

Mn
###Magnetoresistance control in granular Zn/1-x-y/Cd/x/Mn/y/GeAs/2/ nanocomposite ferromagnetic semiconductors|L. Kilanski,I. V. Fedorchenko,M. Górska,A. Ślawska-Waniewska,N. Nedelko,A. Podgórni,A. Avdonin,E. Lahderanta,W. Dobrowolski,A. N. Aronov,S. F. Marenkin###
(102394, 102394)
 We present studies of structural, magnetic and electrical properties ofZn/1-x-y/Cd/x<missing VAR>/Mn/y<missing VAR>/GeAs/2/ nanocomposite ferromagnetic semiconductor sampleswith changeable chemical composition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 305, 'K', 1],[227.0, 0.85, 'is', 5],[239.0, 25, 'K', 5],[251.0, -32, '%', 5],[259.0, 1.4, 'K', 5],[307.0, 0.12, 'is', 6],[322.0, 50, '%', 6],[337.0, 4.3, 'K', 6]

GeAs
###Magnetoresistance control in granular Zn/1-x-y/Cd/x/Mn/y/GeAs/2/ nanocomposite ferromagnetic semiconductors|L. Kilanski,I. V. Fedorchenko,M. Górska,A. Ślawska-Waniewska,N. Nedelko,A. Podgórni,A. Avdonin,E. Lahderanta,W. Dobrowolski,A. N. Aronov,S. F. Marenkin###
(102398, 102399)
 We present studies of structural, magnetic and electrical properties ofZn/1-x-y/Cd/x<missing VAR>/Mn/y<missing VAR>/GeAs/2/ nanocomposite ferromagnetic semiconductor sampleswith changeable chemical composition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 305, 'K', 1],[222.0, 0.85, 'is', 5],[234.0, 25, 'K', 5],[246.0, -32, '%', 5],[254.0, 1.4, 'K', 5],[302.0, 0.12, 'is', 6],[317.0, 50, '%', 6],[332.0, 4.3, 'K', 6]

MnAs
###Magnetoresistance control in granular Zn/1-x-y/Cd/x/Mn/y/GeAs/2/ nanocomposite ferromagnetic semiconductors|L. Kilanski,I. V. Fedorchenko,M. Górska,A. Ślawska-Waniewska,N. Nedelko,A. Podgórni,A. Avdonin,E. Lahderanta,W. Dobrowolski,A. N. Aronov,S. F. Marenkin###
(102428, 102429)
 The presence of MnAs clusters induces inthe studied alloy room temperature ferromagnetism with the Curie temperature,T<missing VAR>C, around 305 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 305, 'K', 0],[192.0, 0.85, 'is', 4],[204.0, 25, 'K', 4],[216.0, -32, '%', 4],[224.0, 1.4, 'K', 4],[272.0, 0.12, 'is', 5],[287.0, 50, '%', 5],[302.0, 4.3, 'K', 5]

C
###Magnetoresistance control in granular Zn/1-x-y/Cd/x/Mn/y/GeAs/2/ nanocomposite ferromagnetic semiconductors|L. Kilanski,I. V. Fedorchenko,M. Górska,A. Ślawska-Waniewska,N. Nedelko,A. Podgórni,A. Avdonin,E. Lahderanta,W. Dobrowolski,A. N. Aronov,S. F. Marenkin###
(102461, 102461)
 The presence of MnAs clusters induces inthe studied alloy room temperature ferromagnetism with the Curie temperature,T<missing VAR>C, around 305 K.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 305, 'K', 0],[160.0, 0.85, 'is', 4],[172.0, 25, 'K', 4],[184.0, -32, '%', 4],[192.0, 1.4, 'K', 4],[240.0, 0.12, 'is', 5],[255.0, 50, '%', 5],[270.0, 4.3, 'K', 5]

Cd
###Magnetoresistance control in granular Zn/1-x-y/Cd/x/Mn/y/GeAs/2/ nanocomposite ferromagnetic semiconductors|L. Kilanski,I. V. Fedorchenko,M. Górska,A. Ślawska-Waniewska,N. Nedelko,A. Podgórni,A. Avdonin,E. Lahderanta,W. Dobrowolski,A. N. Aronov,S. F. Marenkin###
(102552, 102552)
The Cd-content allows a change of magnetoresistance sign in our samples fromnegative (for x<missing VAR>  0.85) to positive (for x<missing VAR>  0.12).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 305, 'K', 3],[69.0, 0.85, 'is', 1],[81.0, 25, 'K', 1],[93.0, -32, '%', 1],[101.0, 1.4, 'K', 1],[149.0, 0.12, 'is', 2],[164.0, 50, '%', 2],[179.0, 4.3, 'K', 2]

B
###Magnetoresistance control in granular Zn/1-x-y/Cd/x/Mn/y/GeAs/2/ nanocomposite ferromagnetic semiconductors|L. Kilanski,I. V. Fedorchenko,M. Górska,A. Ślawska-Waniewska,N. Nedelko,A. Podgórni,A. Avdonin,E. Lahderanta,W. Dobrowolski,A. N. Aronov,S. F. Marenkin###
(102657, 102657)
 The negativemagnetoresistance present in the samples with x<missing VAR>  0.85 is observed attemperatures T<missing VAR> < 25 K with maximum values of about -32% at T<missing VAR>  1.4 K and B  13T<missing VAR>, strongly depending on the Mn content, y<missing VAR>.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[192.0, 305, 'K', 4],[36.0, 0.85, 'is', 0],[24.0, 25, 'K', 0],[12.0, -32, '%', 0],[4.0, 1.4, 'K', 0],[44.0, 0.12, 'is', 1],[59.0, 50, '%', 1],[74.0, 4.3, 'K', 1]

Mn
###Magnetoresistance control in granular Zn/1-x-y/Cd/x/Mn/y/GeAs/2/ nanocomposite ferromagnetic semiconductors|L. Kilanski,I. V. Fedorchenko,M. Górska,A. Ślawska-Waniewska,N. Nedelko,A. Podgórni,A. Avdonin,E. Lahderanta,W. Dobrowolski,A. N. Aronov,S. F. Marenkin###
(102674, 102674)
 The negativemagnetoresistance present in the samples with x<missing VAR>  0.85 is observed attemperatures T<missing VAR> < 25 K with maximum values of about -32% at T<missing VAR>  1.4 K and B  13T<missing VAR>, strongly depending on the Mn content, y<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[209.0, 305, 'K', 4],[53.0, 0.85, 'is', 0],[41.0, 25, 'K', 0],[29.0, -32, '%', 0],[21.0, 1.4, 'K', 0],[27.0, 0.12, 'is', 1],[42.0, 50, '%', 1],[57.0, 4.3, 'K', 1]

B
###Magnetoresistance control in granular Zn/1-x-y/Cd/x/Mn/y/GeAs/2/ nanocomposite ferromagnetic semiconductors|L. Kilanski,I. V. Fedorchenko,M. Górska,A. Ślawska-Waniewska,N. Nedelko,A. Podgórni,A. Avdonin,E. Lahderanta,W. Dobrowolski,A. N. Aronov,S. F. Marenkin###
(102721, 102721)
 The positive magnetoresistancepresent in the samples with x<missing VAR>  0.12 is observed with maximum values notexceeding 50% at B 13 T<missing VAR> and T<missing VAR>  4.3 K, changing with the Mn content, y<missing VAR>.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[256.0, 305, 'K', 5],[100.0, 0.85, 'is', 1],[88.0, 25, 'K', 1],[76.0, -32, '%', 1],[68.0, 1.4, 'K', 1],[20.0, 0.12, 'is', 0],[5.0, 50, '%', 0],[10.0, 4.3, 'K', 0]

Mn
###Magnetoresistance control in granular Zn/1-x-y/Cd/x/Mn/y/GeAs/2/ nanocomposite ferromagnetic semiconductors|L. Kilanski,I. V. Fedorchenko,M. Górska,A. Ślawska-Waniewska,N. Nedelko,A. Podgórni,A. Avdonin,E. Lahderanta,W. Dobrowolski,A. N. Aronov,S. F. Marenkin###
(102740, 102740)
 The positive magnetoresistancepresent in the samples with x<missing VAR>  0.12 is observed with maximum values notexceeding 50% at B 13 T<missing VAR> and T<missing VAR>  4.3 K, changing with the Mn content, y<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[275.0, 305, 'K', 5],[119.0, 0.85, 'is', 1],[107.0, 25, 'K', 1],[95.0, -32, '%', 1],[87.0, 1.4, 'K', 1],[39.0, 0.12, 'is', 0],[24.0, 50, '%', 0],[9.0, 4.3, 'K', 0]

Pt
###Full angular dependence of the spin Hall and ordinary magnetoresistance in epitaxial antiferromagnetic NiO(001)/Pt thin films|Lorenzo Baldrati,Andrew Ross,Tomohiko Niizeki,Christoph Schneider,Rafael Ramos,Joel Cramer,Olena Gomonay,Mariia Filianina,Tatiana Savchenko,Daniel Heinze,Armin Kleibert,Eiji Saitoh,Jairo Sinova,Mathias Kläui###
(102788, 102788)
Full angular dependence of the spin Hall and ordinary magnetoresistance in epitaxial antiferromagnetic NiO(001)/Pt thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 11, 'T', 2],[226.0, 1, 'and', 4],[227.0, 3, 'T', 4],[243.0, 11, 'T', 4]

S
###Full angular dependence of the spin Hall and ordinary magnetoresistance in epitaxial antiferromagnetic NiO(001)/Pt thin films|Lorenzo Baldrati,Andrew Ross,Tomohiko Niizeki,Christoph Schneider,Rafael Ramos,Joel Cramer,Olena Gomonay,Mariia Filianina,Tatiana Savchenko,Daniel Heinze,Armin Kleibert,Eiji Saitoh,Jairo Sinova,Mathias Kläui###
(102827, 102827)
 We report the observation of the three-dimensional angular dependence of thespin Hall magnetoresistance (SMR) in a bilayer of the epitaxialantiferromagnetic insulator NiO(001) and the heavy metal Pt, without anyferromagnetic element.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 11, 'T', 1],[187.0, 1, 'and', 3],[188.0, 3, 'T', 3],[204.0, 11, 'T', 3]

Pt
###Full angular dependence of the spin Hall and ordinary magnetoresistance in epitaxial antiferromagnetic NiO(001)/Pt thin films|Lorenzo Baldrati,Andrew Ross,Tomohiko Niizeki,Christoph Schneider,Rafael Ramos,Joel Cramer,Olena Gomonay,Mariia Filianina,Tatiana Savchenko,Daniel Heinze,Armin Kleibert,Eiji Saitoh,Jairo Sinova,Mathias Kläui###
(102863, 102863)
 We report the observation of the three-dimensional angular dependence of thespin Hall magnetoresistance (SMR) in a bilayer of the epitaxialantiferromagnetic insulator NiO(001) and the heavy metal Pt, without anyferromagnetic element.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 11, 'T', 1],[151.0, 1, 'and', 3],[152.0, 3, 'T', 3],[168.0, 11, 'T', 3]

S
###Full angular dependence of the spin Hall and ordinary magnetoresistance in epitaxial antiferromagnetic NiO(001)/Pt thin films|Lorenzo Baldrati,Andrew Ross,Tomohiko Niizeki,Christoph Schneider,Rafael Ramos,Joel Cramer,Olena Gomonay,Mariia Filianina,Tatiana Savchenko,Daniel Heinze,Armin Kleibert,Eiji Saitoh,Jairo Sinova,Mathias Kläui###
(102985, 102985)
 The totalmagnetoresistance has contributions arising from both the SMR and ordinarymagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 11, 'T', 1],[29.0, 1, 'and', 1],[30.0, 3, 'T', 1],[46.0, 11, 'T', 1]

S
###Full angular dependence of the spin Hall and ordinary magnetoresistance in epitaxial antiferromagnetic NiO(001)/Pt thin films|Lorenzo Baldrati,Andrew Ross,Tomohiko Niizeki,Christoph Schneider,Rafael Ramos,Joel Cramer,Olena Gomonay,Mariia Filianina,Tatiana Savchenko,Daniel Heinze,Armin Kleibert,Eiji Saitoh,Jairo Sinova,Mathias Kläui###
(103005, 103005)
 The onset of the SMR signal occurs between 1 and 3 T and nosaturation is visible up to 11 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 11, 'T', 2],[9.0, 1, 'and', 0],[10.0, 3, 'T', 0],[26.0, 11, 'T', 0]

S
###Full angular dependence of the spin Hall and ordinary magnetoresistance in epitaxial antiferromagnetic NiO(001)/Pt thin films|Lorenzo Baldrati,Andrew Ross,Tomohiko Niizeki,Christoph Schneider,Rafael Ramos,Joel Cramer,Olena Gomonay,Mariia Filianina,Tatiana Savchenko,Daniel Heinze,Armin Kleibert,Eiji Saitoh,Jairo Sinova,Mathias Kläui###
(103049, 103049)
 The three-dimensional angular dependence ofthe SMR can be explained by a model considering the reversible field-inducedredistribution of magnetostrictive antiferromagnetic S- and T<missing VAR>-domains in theNiO(001), stemming from the competition between the Zeeman energy and theelastic clamping effect of the non-magnetic MgO substrate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 11, 'T', 3],[35.0, 1, 'and', 1],[34.0, 3, 'T', 1],[18.0, 11, 'T', 1]

S
###Full angular dependence of the spin Hall and ordinary magnetoresistance in epitaxial antiferromagnetic NiO(001)/Pt thin films|Lorenzo Baldrati,Andrew Ross,Tomohiko Niizeki,Christoph Schneider,Rafael Ramos,Joel Cramer,Olena Gomonay,Mariia Filianina,Tatiana Savchenko,Daniel Heinze,Armin Kleibert,Eiji Saitoh,Jairo Sinova,Mathias Kläui###
(103084, 103084)
 The three-dimensional angular dependence ofthe SMR can be explained by a model considering the reversible field-inducedredistribution of magnetostrictive antiferromagnetic S- and T<missing VAR>-domains in theNiO(001), stemming from the competition between the Zeeman energy and theelastic clamping effect of the non-magnetic MgO substrate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 11, 'T', 3],[70.0, 1, 'and', 1],[69.0, 3, 'T', 1],[53.0, 11, 'T', 1]

MgO
###Full angular dependence of the spin Hall and ordinary magnetoresistance in epitaxial antiferromagnetic NiO(001)/Pt thin films|Lorenzo Baldrati,Andrew Ross,Tomohiko Niizeki,Christoph Schneider,Rafael Ramos,Joel Cramer,Olena Gomonay,Mariia Filianina,Tatiana Savchenko,Daniel Heinze,Armin Kleibert,Eiji Saitoh,Jairo Sinova,Mathias Kläui###
(103140, 103141)
 The three-dimensional angular dependence ofthe SMR can be explained by a model considering the reversible field-inducedredistribution of magnetostrictive antiferromagnetic S- and T<missing VAR>-domains in theNiO(001), stemming from the competition between the Zeeman energy and theelastic clamping effect of the non-magnetic MgO substrate.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[225.0, 11, 'T', 3],[126.0, 1, 'and', 1],[125.0, 3, 'T', 1],[109.0, 11, 'T', 1]

S
###Full angular dependence of the spin Hall and ordinary magnetoresistance in epitaxial antiferromagnetic NiO(001)/Pt thin films|Lorenzo Baldrati,Andrew Ross,Tomohiko Niizeki,Christoph Schneider,Rafael Ramos,Joel Cramer,Olena Gomonay,Mariia Filianina,Tatiana Savchenko,Daniel Heinze,Armin Kleibert,Eiji Saitoh,Jairo Sinova,Mathias Kläui###
(103153, 103153)
 From the observedSMR ratio, we estimate the spin mixing conductance at the NiO/Pt interface tobe greater than 2times1014 Omega-1 m<missing VAR>-2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[238.0, 11, 'T', 4],[139.0, 1, 'and', 2],[138.0, 3, 'T', 2],[122.0, 11, 'T', 2]

NiO/Pt
###Full angular dependence of the spin Hall and ordinary magnetoresistance in epitaxial antiferromagnetic NiO(001)/Pt thin films|Lorenzo Baldrati,Andrew Ross,Tomohiko Niizeki,Christoph Schneider,Rafael Ramos,Joel Cramer,Olena Gomonay,Mariia Filianina,Tatiana Savchenko,Daniel Heinze,Armin Kleibert,Eiji Saitoh,Jairo Sinova,Mathias Kläui###
(103176, 103179)
 From the observedSMR ratio, we estimate the spin mixing conductance at the NiO/Pt interface tobe greater than 2times1014 Omega-1 m<missing VAR>-2.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[261.0, 11, 'T', 4],[162.0, 1, 'and', 2],[161.0, 3, 'T', 2],[145.0, 11, 'T', 2]

N
###Full angular dependence of the spin Hall and ordinary magnetoresistance in epitaxial antiferromagnetic NiO(001)/Pt thin films|Lorenzo Baldrati,Andrew Ross,Tomohiko Niizeki,Christoph Schneider,Rafael Ramos,Joel Cramer,Olena Gomonay,Mariia Filianina,Tatiana Savchenko,Daniel Heinze,Armin Kleibert,Eiji Saitoh,Jairo Sinova,Mathias Kläui###
(103225, 103225)
 Our resultsdemonstrate the possibility to electrically detect the Neel vector directionin stable NiO(001) thin films, for rotations in the xy- and xz- planes.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[310.0, 11, 'T', 5],[211.0, 1, 'and', 3],[210.0, 3, 'T', 3],[194.0, 11, 'T', 3]

S
###Full angular dependence of the spin Hall and ordinary magnetoresistance in epitaxial antiferromagnetic NiO(001)/Pt thin films|Lorenzo Baldrati,Andrew Ross,Tomohiko Niizeki,Christoph Schneider,Rafael Ramos,Joel Cramer,Olena Gomonay,Mariia Filianina,Tatiana Savchenko,Daniel Heinze,Armin Kleibert,Eiji Saitoh,Jairo Sinova,Mathias Kläui###
(103312, 103312)
Moreover, we show that a careful subtraction of the ordinary magnetoresistancecontribution is crucial to correctly estimate the amplitude of the SMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[397.0, 11, 'T', 6],[298.0, 1, 'and', 4],[297.0, 3, 'T', 4],[281.0, 11, 'T', 4]

YSb
###Giant magnetoresistance, three-dimensional Fermi surface and origin of resistivity plateau in YSb semimetal|Orest Pavlosiuk,Przemysław Swatek,Piotr Wiśniewski###
(103350, 103351)
Giant magnetoresistance, three-dimensional Fermi surface and origin of resistivity plateau in YSb semimetal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 2, 'D', 2],[324.0, 3, 'D', 6],[366.0, 3, 'D', 6],[394.0, 2, 'D', 6],[441.0, 3, 'D', 7]

LaSb
###Giant magnetoresistance, three-dimensional Fermi surface and origin of resistivity plateau in YSb semimetal|Orest Pavlosiuk,Przemysław Swatek,Piotr Wiśniewski###
(103479, 103480)
 Similar features were observed ina simple rock-salt-structure LaSb, leading to a suggestion of the possiblenon-trivial topology of 2D states in this compound.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 2, 'D', 0],[195.0, 3, 'D', 4],[237.0, 3, 'D', 4],[265.0, 2, 'D', 4],[312.0, 3, 'D', 5]

YSb
###Giant magnetoresistance, three-dimensional Fermi surface and origin of resistivity plateau in YSb semimetal|Orest Pavlosiuk,Przemysław Swatek,Piotr Wiśniewski###
(103529, 103530)
 We show that its sistercompound YSb is also characterized by giant magnetoresistance exceeding onethousand percent and low-temperature plateau of resistivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 2, 'D', 1],[145.0, 3, 'D', 3],[187.0, 3, 'D', 3],[215.0, 2, 'D', 3],[262.0, 3, 'D', 4]

YSb
###Giant magnetoresistance, three-dimensional Fermi surface and origin of resistivity plateau in YSb semimetal|Orest Pavlosiuk,Przemysław Swatek,Piotr Wiśniewski###
(103581, 103582)
 We thus performedin-depth analysis of YSb Fermi surface by band calculations, magnetoresistance,and Shubnikov--de Haas effect measurements, which reveals onlythree-dimensional Fermi sheets.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 2, 'D', 2],[93.0, 3, 'D', 2],[135.0, 3, 'D', 2],[163.0, 2, 'D', 2],[210.0, 3, 'D', 3]

LaSb
###Giant magnetoresistance, three-dimensional Fermi surface and origin of resistivity plateau in YSb semimetal|Orest Pavlosiuk,Przemysław Swatek,Piotr Wiśniewski###
(103771, 103772)
 We discuss data implying that analogousfield-induced properties of LaSb can also be well understood in the frameworkof 3D multiband model.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[266.0, 2, 'D', 5],[96.0, 3, 'D', 1],[54.0, 3, 'D', 1],[26.0, 2, 'D', 1],[20.0, 3, 'D', 0]

C
###Ultrathin All-in-one Spin Hall Magnetic Sensor with Built-in AC Excitation Enabled by Spin Current|Yanjun Xu,Yumeng Yang,Mengzhen Zhang,Ziyan Luo,Yihong Wu###
(103830, 103830)
Ultrathin All-in-one Spin Hall Magnetic Sensor with Built-in AC Excitation Enabled by Spin Current.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[363.0, 1, 'nT', 5],[371.0, 1, 'Hz', 5]

S
###Ultrathin All-in-one Spin Hall Magnetic Sensor with Built-in AC Excitation Enabled by Spin Current|Yanjun Xu,Yumeng Yang,Mengzhen Zhang,Ziyan Luo,Yihong Wu###
(104032, 104032)
 Here, we demonstrate an all-in-one spin Hallmagnetoresistance (SMR) sensor with built-in AC excitation and rectificationdetection, which effectively eliminates the requirements of any linearizationand domain stabilization mechanisms separate from the active sensing layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 1, 'nT', 2],[169.0, 1, 'Hz', 2]

C
###Ultrathin All-in-one Spin Hall Magnetic Sensor with Built-in AC Excitation Enabled by Spin Current|Yanjun Xu,Yumeng Yang,Mengzhen Zhang,Ziyan Luo,Yihong Wu###
(104046, 104046)
 Here, we demonstrate an all-in-one spin Hallmagnetoresistance (SMR) sensor with built-in AC excitation and rectificationdetection, which effectively eliminates the requirements of any linearizationand domain stabilization mechanisms separate from the active sensing layer.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 1, 'nT', 2],[155.0, 1, 'Hz', 2]

S
###Ultrathin All-in-one Spin Hall Magnetic Sensor with Built-in AC Excitation Enabled by Spin Current|Yanjun Xu,Yumeng Yang,Mengzhen Zhang,Ziyan Luo,Yihong Wu###
(104113, 104113)
This was made possible by the coexistence of SMR and spin-orbit torque (SOT) inultrathin NiFe/Pt bilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 1, 'nT', 1],[88.0, 1, 'Hz', 1]

SO
###Ultrathin All-in-one Spin Hall Magnetic Sensor with Built-in AC Excitation Enabled by Spin Current|Yanjun Xu,Yumeng Yang,Mengzhen Zhang,Ziyan Luo,Yihong Wu###
(104126, 104127)
This was made possible by the coexistence of SMR and spin-orbit torque (SOT) inultrathin NiFe/Pt bilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 1, 'nT', 1],[74.0, 1, 'Hz', 1]

NiFe/Pt
###Ultrathin All-in-one Spin Hall Magnetic Sensor with Built-in AC Excitation Enabled by Spin Current|Yanjun Xu,Yumeng Yang,Mengzhen Zhang,Ziyan Luo,Yihong Wu###
(104136, 104139)
This was made possible by the coexistence of SMR and spin-orbit torque (SOT) inultrathin NiFe/Pt bilayers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[54.0, 1, 'nT', 1],[62.0, 1, 'Hz', 1]

C
###Ultrathin All-in-one Spin Hall Magnetic Sensor with Built-in AC Excitation Enabled by Spin Current|Yanjun Xu,Yumeng Yang,Mengzhen Zhang,Ziyan Luo,Yihong Wu###
(104173, 104173)
 Despite the simplest possible structure, thefabricated Wheatstone bridge sensor exhibits essentially zero D<missing VAR>C offset,negligible hysteresis, and a detectivity of around 1nT/sqrt(Hz) at 1Hz.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 1, 'nT', 0],[28.0, 1, 'Hz', 0]

In
###Ultrathin All-in-one Spin Hall Magnetic Sensor with Built-in AC Excitation Enabled by Spin Current|Yanjun Xu,Yumeng Yang,Mengzhen Zhang,Ziyan Luo,Yihong Wu###
(104204, 104204)
 Inaddition, it also shows an angle dependence to external field similar to thoseof GMR and TMR, though it does have any reference layer (unlike GMR and TMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 1, 'nT', 1],[3.0, 1, 'Hz', 1]

S
###Ultrathin All-in-one Spin Hall Magnetic Sensor with Built-in AC Excitation Enabled by Spin Current|Yanjun Xu,Yumeng Yang,Mengzhen Zhang,Ziyan Luo,Yihong Wu###
(104286, 104286)
The superior performances of SMR sensors are evidently demonstrated in theproof-of-concept experiments on rotation angle measurement, and vibration andfinger motion detection.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 1, 'nT', 2],[85.0, 1, 'Hz', 2]

Cr2O3/Pt
###Evolution of the Spin Hall Magnetoresistance in Cr$_2$O$_3$/Pt bilayers close to the Néel temperature|Richard Schlitz,Tobias Kosub,Andy Thomas,Savio Fabretti,Kornelius Nielsch,Denys Makarov,Sebastian T. B. Goennenwein###
(104356, 104361)
Evolution of the Spin Hall Magnetoresistance in Cr2O3/Pt bilayers close to the Nel temperature.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

N
###Evolution of the Spin Hall Magnetoresistance in Cr$_2$O$_3$/Pt bilayers close to the Néel temperature|Richard Schlitz,Tobias Kosub,Andy Thomas,Savio Fabretti,Kornelius Nielsch,Denys Makarov,Sebastian T. B. Goennenwein###
(104371, 104371)
Evolution of the Spin Hall Magnetoresistance in Cr2O3/Pt bilayers close to the Nel temperature.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr2O3
###Evolution of the Spin Hall Magnetoresistance in Cr$_2$O$_3$/Pt bilayers close to the Néel temperature|Richard Schlitz,Tobias Kosub,Andy Thomas,Savio Fabretti,Kornelius Nielsch,Denys Makarov,Sebastian T. B. Goennenwein###
(104414, 104417)
 We study the evolution of magnetoresistance with temperature in thin filmbilayers consisting of platinum and the antiferromagnet Cr2O3 with itseasy axis out of the plane.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Evolution of the Spin Hall Magnetoresistance in Cr$_2$O$_3$/Pt bilayers close to the Néel temperature|Richard Schlitz,Tobias Kosub,Andy Thomas,Savio Fabretti,Kornelius Nielsch,Denys Makarov,Sebastian T. B. Goennenwein###
(104453, 104453)
 We vary the temperature from 20 - 60degC, closeto the Neel temperature of Cr2O3 of approximately 37degC.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Evolution of the Spin Hall Magnetoresistance in Cr$_2$O$_3$/Pt bilayers close to the Néel temperature|Richard Schlitz,Tobias Kosub,Andy Thomas,Savio Fabretti,Kornelius Nielsch,Denys Makarov,Sebastian T. B. Goennenwein###
(104463, 104463)
 We vary the temperature from 20 - 60degC, closeto the Neel temperature of Cr2O3 of approximately 37degC.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr2O3
###Evolution of the Spin Hall Magnetoresistance in Cr$_2$O$_3$/Pt bilayers close to the Néel temperature|Richard Schlitz,Tobias Kosub,Andy Thomas,Savio Fabretti,Kornelius Nielsch,Denys Makarov,Sebastian T. B. Goennenwein###
(104470, 104473)
 We vary the temperature from 20 - 60degC, closeto the Neel temperature of Cr2O3 of approximately 37degC.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Evolution of the Spin Hall Magnetoresistance in Cr$_2$O$_3$/Pt bilayers close to the Néel temperature|Richard Schlitz,Tobias Kosub,Andy Thomas,Savio Fabretti,Kornelius Nielsch,Denys Makarov,Sebastian T. B. Goennenwein###
(104481, 104481)
 We vary the temperature from 20 - 60degC, closeto the Neel temperature of Cr2O3 of approximately 37degC.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr2O3
###Evolution of the Spin Hall Magnetoresistance in Cr$_2$O$_3$/Pt bilayers close to the Néel temperature|Richard Schlitz,Tobias Kosub,Andy Thomas,Savio Fabretti,Kornelius Nielsch,Denys Makarov,Sebastian T. B. Goennenwein###
(104565, 104568)
 A large magnetoresistance having asymmetry consistent with a positive spin Hall magnetoresistance is observed inthe paramagnetic phase of the Cr2O3, which however vanishes when coolingto below the Neel temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Evolution of the Spin Hall Magnetoresistance in Cr$_2$O$_3$/Pt bilayers close to the Néel temperature|Richard Schlitz,Tobias Kosub,Andy Thomas,Savio Fabretti,Kornelius Nielsch,Denys Makarov,Sebastian T. B. Goennenwein###
(104588, 104588)
 A large magnetoresistance having asymmetry consistent with a positive spin Hall magnetoresistance is observed inthe paramagnetic phase of the Cr2O3, which however vanishes when coolingto below the Neel temperature.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Gd3Ga5O12/Pt
###Evolution of the Spin Hall Magnetoresistance in Cr$_2$O$_3$/Pt bilayers close to the Néel temperature|Richard Schlitz,Tobias Kosub,Andy Thomas,Savio Fabretti,Kornelius Nielsch,Denys Makarov,Sebastian T. B. Goennenwein###
(104607, 104614)
 Comparing to analogous experiments in aGd3Ga5O12/Pt heterostructure, we conclude that a paramagnetic fieldinduced magnetization in the insulator is not sufficient to explain theobserved magnetoresistance.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Cr
###Evolution of the Spin Hall Magnetoresistance in Cr$_2$O$_3$/Pt bilayers close to the Néel temperature|Richard Schlitz,Tobias Kosub,Andy Thomas,Savio Fabretti,Kornelius Nielsch,Denys Makarov,Sebastian T. B. Goennenwein###
(104710, 104710)
 We speculate that the type of magnetic moments atthe interface qualitatively impacts the spin angular momentum transfer, withthe 3d<missing VAR> moments of Cr sinking angular momentum much more efficiently ascompared to the more localized 4f<missing VAR> moments of Gd.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Gd
###Evolution of the Spin Hall Magnetoresistance in Cr$_2$O$_3$/Pt bilayers close to the Néel temperature|Richard Schlitz,Tobias Kosub,Andy Thomas,Savio Fabretti,Kornelius Nielsch,Denys Makarov,Sebastian T. B. Goennenwein###
(104744, 104744)
 We speculate that the type of magnetic moments atthe interface qualitatively impacts the spin angular momentum transfer, withthe 3d<missing VAR> moments of Cr sinking angular momentum much more efficiently ascompared to the more localized 4f<missing VAR> moments of Gd.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pr/Sm
###Probing the Origin of Extreme Magnetoresistance in Pr/Sm Mono-Antimonides/Bismuthides|Zhongzheng Wu,Fan Wu,Peng Li,Chunyu Guo,Yi Liu,Zhe Sun,Cheng-Maw Cheng,Tai-Chang Chiang,Chao Cao,Huiqiu Yuan,Yang Liu###
(104769, 104771)
Probing the Origin of Extreme Magnetoresistance in Pr/Sm Mono-Antimonides/Bismuthides.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[215.0, 10, 'K', 3],[220.0, 150, 'K', 3]

Pr/Sm
###Probing the Origin of Extreme Magnetoresistance in Pr/Sm Mono-Antimonides/Bismuthides|Zhongzheng Wu,Fan Wu,Peng Li,Chunyu Guo,Yi Liu,Zhe Sun,Cheng-Maw Cheng,Tai-Chang Chiang,Chao Cao,Huiqiu Yuan,Yang Liu###
(104823, 104825)
 Combining angle-resolved photoemission spectroscopy and magneto-transportmeasurements, we systematically investigated the possible origin of the extrememagnetoresistance in Pr/Sm mono-antimonides/bismuthides (PrSb, SmSb, PrBi,SmBi).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[161.0, 10, 'K', 2],[166.0, 150, 'K', 2]

PrSb
###Probing the Origin of Extreme Magnetoresistance in Pr/Sm Mono-Antimonides/Bismuthides|Zhongzheng Wu,Fan Wu,Peng Li,Chunyu Guo,Yi Liu,Zhe Sun,Cheng-Maw Cheng,Tai-Chang Chiang,Chao Cao,Huiqiu Yuan,Yang Liu###
(104834, 104835)
 Combining angle-resolved photoemission spectroscopy and magneto-transportmeasurements, we systematically investigated the possible origin of the extrememagnetoresistance in Pr/Sm mono-antimonides/bismuthides (PrSb, SmSb, PrBi,SmBi).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 10, 'K', 2],[156.0, 150, 'K', 2]

SmSb
###Probing the Origin of Extreme Magnetoresistance in Pr/Sm Mono-Antimonides/Bismuthides|Zhongzheng Wu,Fan Wu,Peng Li,Chunyu Guo,Yi Liu,Zhe Sun,Cheng-Maw Cheng,Tai-Chang Chiang,Chao Cao,Huiqiu Yuan,Yang Liu###
(104838, 104839)
 Combining angle-resolved photoemission spectroscopy and magneto-transportmeasurements, we systematically investigated the possible origin of the extrememagnetoresistance in Pr/Sm mono-antimonides/bismuthides (PrSb, SmSb, PrBi,SmBi).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 10, 'K', 2],[152.0, 150, 'K', 2]

PrBi
###Probing the Origin of Extreme Magnetoresistance in Pr/Sm Mono-Antimonides/Bismuthides|Zhongzheng Wu,Fan Wu,Peng Li,Chunyu Guo,Yi Liu,Zhe Sun,Cheng-Maw Cheng,Tai-Chang Chiang,Chao Cao,Huiqiu Yuan,Yang Liu###
(104842, 104843)
 Combining angle-resolved photoemission spectroscopy and magneto-transportmeasurements, we systematically investigated the possible origin of the extrememagnetoresistance in Pr/Sm mono-antimonides/bismuthides (PrSb, SmSb, PrBi,SmBi).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 10, 'K', 2],[148.0, 150, 'K', 2]

Bi
###Probing the Origin of Extreme Magnetoresistance in Pr/Sm Mono-Antimonides/Bismuthides|Zhongzheng Wu,Fan Wu,Peng Li,Chunyu Guo,Yi Liu,Zhe Sun,Cheng-Maw Cheng,Tai-Chang Chiang,Chao Cao,Huiqiu Yuan,Yang Liu###
(104848, 104848)
 Combining angle-resolved photoemission spectroscopy and magneto-transportmeasurements, we systematically investigated the possible origin of the extrememagnetoresistance in Pr/Sm mono-antimonides/bismuthides (PrSb, SmSb, PrBi,SmBi).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 10, 'K', 2],[143.0, 150, 'K', 2]

Pr/Sm
###Probing the Origin of Extreme Magnetoresistance in Pr/Sm Mono-Antimonides/Bismuthides|Zhongzheng Wu,Fan Wu,Peng Li,Chunyu Guo,Yi Liu,Zhe Sun,Cheng-Maw Cheng,Tai-Chang Chiang,Chao Cao,Huiqiu Yuan,Yang Liu###
(104887, 104889)
 Our photoemission measurements reveal that the bulk band inversion andsurface states are absent (present) in Pr/Sm antimonides (bismuthides),implying that topological surface states are unlikely to play an important rolefor the observed extreme magnetoresistance.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[97.0, 10, 'K', 1],[102.0, 150, 'K', 1]

PrSb
###Probing the Origin of Extreme Magnetoresistance in Pr/Sm Mono-Antimonides/Bismuthides|Zhongzheng Wu,Fan Wu,Peng Li,Chunyu Guo,Yi Liu,Zhe Sun,Cheng-Maw Cheng,Tai-Chang Chiang,Chao Cao,Huiqiu Yuan,Yang Liu###
(105126, 105127)
 Finally, we found that both PrSb and SmSb exhibithighly linear bulk bands near the X<missing VAR> point and lie close to the transition pointbetween a topologically trivial and nontrivial phase, which might be relevantfor the observed anomalous quantum oscillations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 10, 'K', 3],[135.0, 150, 'K', 3]

SmSb
###Probing the Origin of Extreme Magnetoresistance in Pr/Sm Mono-Antimonides/Bismuthides|Zhongzheng Wu,Fan Wu,Peng Li,Chunyu Guo,Yi Liu,Zhe Sun,Cheng-Maw Cheng,Tai-Chang Chiang,Chao Cao,Huiqiu Yuan,Yang Liu###
(105131, 105132)
 Finally, we found that both PrSb and SmSb exhibithighly linear bulk bands near the X<missing VAR> point and lie close to the transition pointbetween a topologically trivial and nontrivial phase, which might be relevantfor the observed anomalous quantum oscillations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 10, 'K', 3],[140.0, 150, 'K', 3]

La1-xCa
###Magnetotransport properties of La$_{1-x}$Ca$_x$MnO$_3$ (0.52 $\leq x \leq$ 0.75): signature of phase coexistence|M. Čulo,M. Basletić,E. Tafra,A. Hamzić,S. Tomić,F. Fischgrabe,V. Moshnyaga,B. Korin-Hamzić###
(105219, 105223)
Magnetotransport properties of La1-xCax<missing VAR>MnO3 (0.52 leq x<missing VAR> leq 0.75) signature of phase coexistence.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[95.0, 0.5, ',', 1],[187.0, 0.52, ',', 2],[208.0, 5, 'T', 2],[281.0, 3, 'D', 3],[318.0, 0.58, ',', 4]

MnO3
###Magnetotransport properties of La$_{1-x}$Ca$_x$MnO$_3$ (0.52 $\leq x \leq$ 0.75): signature of phase coexistence|M. Čulo,M. Basletić,E. Tafra,A. Hamzić,S. Tomić,F. Fischgrabe,V. Moshnyaga,B. Korin-Hamzić###
(105225, 105227)
Magnetotransport properties of La1-xCax<missing VAR>MnO3 (0.52 leq x<missing VAR> leq 0.75) signature of phase coexistence.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 0.5, ',', 1],[183.0, 0.52, ',', 2],[204.0, 5, 'T', 2],[277.0, 3, 'D', 3],[314.0, 0.58, ',', 4]

La1-xCa
###Magnetotransport properties of La$_{1-x}$Ca$_x$MnO$_3$ (0.52 $\leq x \leq$ 0.75): signature of phase coexistence|M. Čulo,M. Basletić,E. Tafra,A. Hamzić,S. Tomić,F. Fischgrabe,V. Moshnyaga,B. Korin-Hamzić###
(105285, 105289)
 We report the temperature and magnetic field dependence of transportproperties in epitaxial films of the manganite La1-xCax<missing VAR>MnO3 inthe overdoped region of the phase diagram for x<missing VAR> > 0.5, where acharge--ordered (CO) and an antiferromagnetic (AF) phase are present.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[29.0, 0.5, ',', 0],[121.0, 0.52, ',', 1],[142.0, 5, 'T', 1],[215.0, 3, 'D', 2],[252.0, 0.58, ',', 3]

MnO3
###Magnetotransport properties of La$_{1-x}$Ca$_x$MnO$_3$ (0.52 $\leq x \leq$ 0.75): signature of phase coexistence|M. Čulo,M. Basletić,E. Tafra,A. Hamzić,S. Tomić,F. Fischgrabe,V. Moshnyaga,B. Korin-Hamzić###
(105291, 105293)
 We report the temperature and magnetic field dependence of transportproperties in epitaxial films of the manganite La1-xCax<missing VAR>MnO3 inthe overdoped region of the phase diagram for x<missing VAR> > 0.5, where acharge--ordered (CO) and an antiferromagnetic (AF) phase are present.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 0.5, ',', 0],[117.0, 0.52, ',', 1],[138.0, 5, 'T', 1],[211.0, 3, 'D', 2],[248.0, 0.58, ',', 3]

(CO)
###Magnetotransport properties of La$_{1-x}$Ca$_x$MnO$_3$ (0.52 $\leq x \leq$ 0.75): signature of phase coexistence|M. Čulo,M. Basletić,E. Tafra,A. Hamzić,S. Tomić,F. Fischgrabe,V. Moshnyaga,B. Korin-Hamzić###
(105331, 105334)
 We report the temperature and magnetic field dependence of transportproperties in epitaxial films of the manganite La1-xCax<missing VAR>MnO3 inthe overdoped region of the phase diagram for x<missing VAR> > 0.5, where acharge--ordered (CO) and an antiferromagnetic (AF) phase are present.
Featurization successful!
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 0.5, ',', 0],[76.0, 0.52, ',', 1],[97.0, 5, 'T', 1],[170.0, 3, 'D', 2],[207.0, 0.58, ',', 3]

F
###Magnetotransport properties of La$_{1-x}$Ca$_x$MnO$_3$ (0.52 $\leq x \leq$ 0.75): signature of phase coexistence|M. Čulo,M. Basletić,E. Tafra,A. Hamzić,S. Tomić,F. Fischgrabe,V. Moshnyaga,B. Korin-Hamzić###
(105344, 105344)
 We report the temperature and magnetic field dependence of transportproperties in epitaxial films of the manganite La1-xCax<missing VAR>MnO3 inthe overdoped region of the phase diagram for x<missing VAR> > 0.5, where acharge--ordered (CO) and an antiferromagnetic (AF) phase are present.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 0.5, ',', 0],[66.0, 0.52, ',', 1],[87.0, 5, 'T', 1],[160.0, 3, 'D', 2],[197.0, 0.58, ',', 3]

K
###Magnetotransport properties of La$_{1-x}$Ca$_x$MnO$_3$ (0.52 $\leq x \leq$ 0.75): signature of phase coexistence|M. Čulo,M. Basletić,E. Tafra,A. Hamzić,S. Tomić,F. Fischgrabe,V. Moshnyaga,B. Korin-Hamzić###
(105386, 105386)
Resistivity, magnetoresistance and angular dependence of magnetoresistance weremeasured in the temperature interval 4.2 mathrmK < T<missing VAR> < 300 mathrmK,for three concentrations x<missing VAR>  0.52, 0.58 and 0.75 and in magnetic fields upto 5 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 0.5, ',', 1],[24.0, 0.52, ',', 0],[45.0, 5, 'T', 0],[118.0, 3, 'D', 1],[155.0, 0.58, ',', 2]

K
###Magnetotransport properties of La$_{1-x}$Ca$_x$MnO$_3$ (0.52 $\leq x \leq$ 0.75): signature of phase coexistence|M. Čulo,M. Basletić,E. Tafra,A. Hamzić,S. Tomić,F. Fischgrabe,V. Moshnyaga,B. Korin-Hamzić###
(105397, 105397)
Resistivity, magnetoresistance and angular dependence of magnetoresistance weremeasured in the temperature interval 4.2 mathrmK < T<missing VAR> < 300 mathrmK,for three concentrations x<missing VAR>  0.52, 0.58 and 0.75 and in magnetic fields upto 5 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 0.5, ',', 1],[13.0, 0.52, ',', 0],[34.0, 5, 'T', 0],[107.0, 3, 'D', 1],[144.0, 0.58, ',', 2]

CO
###Magnetotransport properties of La$_{1-x}$Ca$_x$MnO$_3$ (0.52 $\leq x \leq$ 0.75): signature of phase coexistence|M. Čulo,M. Basletić,E. Tafra,A. Hamzić,S. Tomić,F. Fischgrabe,V. Moshnyaga,B. Korin-Hamzić###
(105498, 105499)
 The semiconductor/insulator--like behavior in zero field was observedin the entire temperature range for all three concentrations textitx<missing VAR> and theelectric conduction, at lower temperatures, in the CO state obeys 3D Motts<missing VAR>variable--range hopping model.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[180.0, 0.5, ',', 2],[88.0, 0.52, ',', 1],[67.0, 5, 'T', 1],[5.0, 3, 'D', 0],[42.0, 0.58, ',', 1]

B
###Magnetotransport properties of La$_{1-x}$Ca$_x$MnO$_3$ (0.52 $\leq x \leq$ 0.75): signature of phase coexistence|M. Čulo,M. Basletić,E. Tafra,A. Hamzić,S. Tomić,F. Fischgrabe,V. Moshnyaga,B. Korin-Hamzić###
(105555, 105555)
 A huge negative magnetoresistance for x<missing VAR>  0.52and x<missing VAR>  0.58, a metal--insulator transition for B > 3 mathrmT<missing VAR> for x<missing VAR> 0.52 and the presence of anisotropy in magnetoresistance for x<missing VAR>  0.52 and x<missing VAR> 0.58 show the fingerprints of colossal magnetoresistance (CMR) behaviorimplying the existence of ferromagnetic (FM) clusters.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[237.0, 0.5, ',', 3],[145.0, 0.52, ',', 2],[124.0, 5, 'T', 2],[51.0, 3, 'D', 1],[14.0, 0.58, ',', 0]

C
###Magnetotransport properties of La$_{1-x}$Ca$_x$MnO$_3$ (0.52 $\leq x \leq$ 0.75): signature of phase coexistence|M. Čulo,M. Basletić,E. Tafra,A. Hamzić,S. Tomić,F. Fischgrabe,V. Moshnyaga,B. Korin-Hamzić###
(105614, 105614)
 A huge negative magnetoresistance for x<missing VAR>  0.52and x<missing VAR>  0.58, a metal--insulator transition for B > 3 mathrmT<missing VAR> for x<missing VAR> 0.52 and the presence of anisotropy in magnetoresistance for x<missing VAR>  0.52 and x<missing VAR> 0.58 show the fingerprints of colossal magnetoresistance (CMR) behaviorimplying the existence of ferromagnetic (FM) clusters.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[296.0, 0.5, ',', 3],[204.0, 0.52, ',', 2],[183.0, 5, 'T', 2],[110.0, 3, 'D', 1],[73.0, 0.58, ',', 0]

F
###Magnetotransport properties of La$_{1-x}$Ca$_x$MnO$_3$ (0.52 $\leq x \leq$ 0.75): signature of phase coexistence|M. Čulo,M. Basletić,E. Tafra,A. Hamzić,S. Tomić,F. Fischgrabe,V. Moshnyaga,B. Korin-Hamzić###
(105633, 105633)
 A huge negative magnetoresistance for x<missing VAR>  0.52and x<missing VAR>  0.58, a metal--insulator transition for B > 3 mathrmT<missing VAR> for x<missing VAR> 0.52 and the presence of anisotropy in magnetoresistance for x<missing VAR>  0.52 and x<missing VAR> 0.58 show the fingerprints of colossal magnetoresistance (CMR) behaviorimplying the existence of ferromagnetic (FM) clusters.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[315.0, 0.5, ',', 3],[223.0, 0.52, ',', 2],[202.0, 5, 'T', 2],[129.0, 3, 'D', 1],[92.0, 0.58, ',', 0]

F
###Magnetotransport properties of La$_{1-x}$Ca$_x$MnO$_3$ (0.52 $\leq x \leq$ 0.75): signature of phase coexistence|M. Čulo,M. Basletić,E. Tafra,A. Hamzić,S. Tomić,F. Fischgrabe,V. Moshnyaga,B. Korin-Hamzić###
(105651, 105651)
 The declining influenceof the FM<missing VAR> clusters in the CO/AF part of the phase diagram with increasing x<missing VAR>contributes to a possible explanation that a phase coexistence is the origin ofthe CMR phenomenon.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[333.0, 0.5, ',', 4],[241.0, 0.52, ',', 3],[220.0, 5, 'T', 3],[147.0, 3, 'D', 2],[110.0, 0.58, ',', 1]

CO
###Magnetotransport properties of La$_{1-x}$Ca$_x$MnO$_3$ (0.52 $\leq x \leq$ 0.75): signature of phase coexistence|M. Čulo,M. Basletić,E. Tafra,A. Hamzić,S. Tomić,F. Fischgrabe,V. Moshnyaga,B. Korin-Hamzić###
(105660, 105661)
 The declining influenceof the FM<missing VAR> clusters in the CO/AF part of the phase diagram with increasing x<missing VAR>contributes to a possible explanation that a phase coexistence is the origin ofthe CMR phenomenon.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[342.0, 0.5, ',', 4],[250.0, 0.52, ',', 3],[229.0, 5, 'T', 3],[156.0, 3, 'D', 2],[119.0, 0.58, ',', 1]

F
###Magnetotransport properties of La$_{1-x}$Ca$_x$MnO$_3$ (0.52 $\leq x \leq$ 0.75): signature of phase coexistence|M. Čulo,M. Basletić,E. Tafra,A. Hamzić,S. Tomić,F. Fischgrabe,V. Moshnyaga,B. Korin-Hamzić###
(105664, 105664)
 The declining influenceof the FM<missing VAR> clusters in the CO/AF part of the phase diagram with increasing x<missing VAR>contributes to a possible explanation that a phase coexistence is the origin ofthe CMR phenomenon.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[346.0, 0.5, ',', 4],[254.0, 0.52, ',', 3],[233.0, 5, 'T', 3],[160.0, 3, 'D', 2],[123.0, 0.58, ',', 1]

C
###Magnetotransport properties of La$_{1-x}$Ca$_x$MnO$_3$ (0.52 $\leq x \leq$ 0.75): signature of phase coexistence|M. Čulo,M. Basletić,E. Tafra,A. Hamzić,S. Tomić,F. Fischgrabe,V. Moshnyaga,B. Korin-Hamzić###
(105712, 105712)
 The declining influenceof the FM<missing VAR> clusters in the CO/AF part of the phase diagram with increasing x<missing VAR>contributes to a possible explanation that a phase coexistence is the origin ofthe CMR phenomenon.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[394.0, 0.5, ',', 4],[302.0, 0.52, ',', 3],[281.0, 5, 'T', 3],[208.0, 3, 'D', 2],[171.0, 0.58, ',', 1]

Fe
###Magnetotransport in Fe-intercalated \textit{T}S$_2$: the comparison between \textit{T} = Ti and Ta|Jesse Choe,Kyungmin Lee,C. -L. Huang,Nandini Trivedi,E. Morosan###
(105731, 105731)
Magnetotransport in Fe-intercalated textitT<missing VAR>S2 the comparison between textitT<missing VAR>  Ti and Ta.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 2, 'H', 1],[103.0, 0.086, ';', 2],[146.0, 2, 'H', 3],[208.0, 1, 'T', 4],[418.0, 1, 'T', 9],[427.0, 2, 'H', 9]

S2
###Magnetotransport in Fe-intercalated \textit{T}S$_2$: the comparison between \textit{T} = Ti and Ta|Jesse Choe,Kyungmin Lee,C. -L. Huang,Nandini Trivedi,E. Morosan###
(105737, 105738)
Magnetotransport in Fe-intercalated textitT<missing VAR>S2 the comparison between textitT<missing VAR>  Ti and Ta.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 2, 'H', 1],[96.0, 0.086, ';', 2],[139.0, 2, 'H', 3],[201.0, 1, 'T', 4],[411.0, 1, 'T', 9],[420.0, 2, 'H', 9]

Ti
###Magnetotransport in Fe-intercalated \textit{T}S$_2$: the comparison between \textit{T} = Ti and Ta|Jesse Choe,Kyungmin Lee,C. -L. Huang,Nandini Trivedi,E. Morosan###
(105750, 105750)
Magnetotransport in Fe-intercalated textitT<missing VAR>S2 the comparison between textitT<missing VAR>  Ti and Ta.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 2, 'H', 1],[84.0, 0.086, ';', 2],[127.0, 2, 'H', 3],[189.0, 1, 'T', 4],[399.0, 1, 'T', 9],[408.0, 2, 'H', 9]

Ta
###Magnetotransport in Fe-intercalated \textit{T}S$_2$: the comparison between \textit{T} = Ti and Ta|Jesse Choe,Kyungmin Lee,C. -L. Huang,Nandini Trivedi,E. Morosan###
(105754, 105754)
Magnetotransport in Fe-intercalated textitT<missing VAR>S2 the comparison between textitT<missing VAR>  Ti and Ta.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 2, 'H', 1],[80.0, 0.086, ';', 2],[123.0, 2, 'H', 3],[185.0, 1, 'T', 4],[395.0, 1, 'T', 9],[404.0, 2, 'H', 9]

Fe
###Magnetotransport in Fe-intercalated \textit{T}S$_2$: the comparison between \textit{T} = Ti and Ta|Jesse Choe,Kyungmin Lee,C. -L. Huang,Nandini Trivedi,E. Morosan###
(105785, 105785)
 Sharp magnetization switching and large magnetoresistance were previouslydiscovered in single crystals of 2H-Fex<missing VAR>TaS2 and attributed to the Fesuperstructure and its defects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 2, 'H', 0],[49.0, 0.086, ';', 1],[92.0, 2, 'H', 2],[154.0, 1, 'T', 3],[364.0, 1, 'T', 8],[373.0, 2, 'H', 8]

TaS2
###Magnetotransport in Fe-intercalated \textit{T}S$_2$: the comparison between \textit{T} = Ti and Ta|Jesse Choe,Kyungmin Lee,C. -L. Huang,Nandini Trivedi,E. Morosan###
(105787, 105789)
 Sharp magnetization switching and large magnetoresistance were previouslydiscovered in single crystals of 2H-Fex<missing VAR>TaS2 and attributed to the Fesuperstructure and its defects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 2, 'H', 0],[45.0, 0.086, ';', 1],[88.0, 2, 'H', 2],[150.0, 1, 'T', 3],[360.0, 1, 'T', 8],[369.0, 2, 'H', 8]

Fe
###Magnetotransport in Fe-intercalated \textit{T}S$_2$: the comparison between \textit{T} = Ti and Ta|Jesse Choe,Kyungmin Lee,C. -L. Huang,Nandini Trivedi,E. Morosan###
(105799, 105799)
 Sharp magnetization switching and large magnetoresistance were previouslydiscovered in single crystals of 2H-Fex<missing VAR>TaS2 and attributed to the Fesuperstructure and its defects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 2, 'H', 0],[35.0, 0.086, ';', 1],[78.0, 2, 'H', 2],[140.0, 1, 'T', 3],[350.0, 1, 'T', 8],[359.0, 2, 'H', 8]

Fe
###Magnetotransport in Fe-intercalated \textit{T}S$_2$: the comparison between \textit{T} = Ti and Ta|Jesse Choe,Kyungmin Lee,C. -L. Huang,Nandini Trivedi,E. Morosan###
(105827, 105827)
 We report similar sharp switching in1T<missing VAR>-Fex<missing VAR>TiS2 (0.086;leq;x<missing VAR>;leq0.703) and the discovery of largemagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 2, 'H', 1],[7.0, 0.086, ';', 0],[50.0, 2, 'H', 1],[112.0, 1, 'T', 2],[322.0, 1, 'T', 7],[331.0, 2, 'H', 7]

TiS2
###Magnetotransport in Fe-intercalated \textit{T}S$_2$: the comparison between \textit{T} = Ti and Ta|Jesse Choe,Kyungmin Lee,C. -L. Huang,Nandini Trivedi,E. Morosan###
(105829, 105831)
 We report similar sharp switching in1T<missing VAR>-Fex<missing VAR>TiS2 (0.086;leq;x<missing VAR>;leq0.703) and the discovery of largemagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 2, 'H', 1],[3.0, 0.086, ';', 0],[46.0, 2, 'H', 1],[108.0, 1, 'T', 2],[318.0, 1, 'T', 7],[327.0, 2, 'H', 7]

H
###Magnetotransport in Fe-intercalated \textit{T}S$_2$: the comparison between \textit{T} = Ti and Ta|Jesse Choe,Kyungmin Lee,C. -L. Huang,Nandini Trivedi,E. Morosan###
(105864, 105864)
 The switching field Hs<missing VAR> and magnetoresistance are similarto 2H-Fex<missing VAR>TaS2, with a larger than expected bowtie magnetoresistance and asharp hysteresis loop.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 2, 'H', 2],[30.0, 0.086, ';', 1],[13.0, 2, 'H', 0],[75.0, 1, 'T', 1],[285.0, 1, 'T', 6],[294.0, 2, 'H', 6]

Fe
###Magnetotransport in Fe-intercalated \textit{T}S$_2$: the comparison between \textit{T} = Ti and Ta|Jesse Choe,Kyungmin Lee,C. -L. Huang,Nandini Trivedi,E. Morosan###
(105879, 105879)
 The switching field Hs<missing VAR> and magnetoresistance are similarto 2H-Fex<missing VAR>TaS2, with a larger than expected bowtie magnetoresistance and asharp hysteresis loop.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 2, 'H', 2],[45.0, 0.086, ';', 1],[2.0, 2, 'H', 0],[60.0, 1, 'T', 1],[270.0, 1, 'T', 6],[279.0, 2, 'H', 6]

TaS2
###Magnetotransport in Fe-intercalated \textit{T}S$_2$: the comparison between \textit{T} = Ti and Ta|Jesse Choe,Kyungmin Lee,C. -L. Huang,Nandini Trivedi,E. Morosan###
(105881, 105883)
 The switching field Hs<missing VAR> and magnetoresistance are similarto 2H-Fex<missing VAR>TaS2, with a larger than expected bowtie magnetoresistance and asharp hysteresis loop.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 2, 'H', 2],[47.0, 0.086, ';', 1],[4.0, 2, 'H', 0],[56.0, 1, 'T', 1],[266.0, 1, 'T', 6],[275.0, 2, 'H', 6]

Fe
###Magnetotransport in Fe-intercalated \textit{T}S$_2$: the comparison between \textit{T} = Ti and Ta|Jesse Choe,Kyungmin Lee,C. -L. Huang,Nandini Trivedi,E. Morosan###
(105941, 105941)
 Despite previous reports, electron diffraction showsonly the sqrt3timessqrt3 superstructure in 1T-Fex<missing VAR>TiS2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 2, 'H', 3],[107.0, 0.086, ';', 2],[64.0, 2, 'H', 1],[2.0, 1, 'T', 0],[208.0, 1, 'T', 5],[217.0, 2, 'H', 5]

TiS2
###Magnetotransport in Fe-intercalated \textit{T}S$_2$: the comparison between \textit{T} = Ti and Ta|Jesse Choe,Kyungmin Lee,C. -L. Huang,Nandini Trivedi,E. Morosan###
(105943, 105945)
 Despite previous reports, electron diffraction showsonly the sqrt3timessqrt3 superstructure in 1T-Fex<missing VAR>TiS2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 2, 'H', 3],[109.0, 0.086, ';', 2],[66.0, 2, 'H', 1],[4.0, 1, 'T', 0],[204.0, 1, 'T', 5],[213.0, 2, 'H', 5]

H
###Magnetotransport in Fe-intercalated \textit{T}S$_2$: the comparison between \textit{T} = Ti and Ta|Jesse Choe,Kyungmin Lee,C. -L. Huang,Nandini Trivedi,E. Morosan###
(106060, 106060)
 Additionally, an increase in Hs<missing VAR> with annealing time isreported.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[277.0, 2, 'H', 6],[226.0, 0.086, ';', 5],[183.0, 2, 'H', 4],[121.0, 1, 'T', 3],[89.0, 1, 'T', 2],[98.0, 2, 'H', 2]

Fe
###Magnetotransport in Fe-intercalated \textit{T}S$_2$: the comparison between \textit{T} = Ti and Ta|Jesse Choe,Kyungmin Lee,C. -L. Huang,Nandini Trivedi,E. Morosan###
(106101, 106101)
 Glassy behavior is shown to coexist within the ferromagnetic state in1T<missing VAR>-Fex<missing VAR>TiS2 for compositions between 0.1 and 0.703.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[318.0, 2, 'H', 7],[267.0, 0.086, ';', 6],[224.0, 2, 'H', 5],[162.0, 1, 'T', 4],[48.0, 1, 'T', 1],[57.0, 2, 'H', 1]

TiS2
###Magnetotransport in Fe-intercalated \textit{T}S$_2$: the comparison between \textit{T} = Ti and Ta|Jesse Choe,Kyungmin Lee,C. -L. Huang,Nandini Trivedi,E. Morosan###
(106103, 106105)
 Glassy behavior is shown to coexist within the ferromagnetic state in1T<missing VAR>-Fex<missing VAR>TiS2 for compositions between 0.1 and 0.703.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[320.0, 2, 'H', 7],[269.0, 0.086, ';', 6],[226.0, 2, 'H', 5],[164.0, 1, 'T', 4],[44.0, 1, 'T', 1],[53.0, 2, 'H', 1]

Fe
###Magnetotransport in Fe-intercalated \textit{T}S$_2$: the comparison between \textit{T} = Ti and Ta|Jesse Choe,Kyungmin Lee,C. -L. Huang,Nandini Trivedi,E. Morosan###
(106151, 106151)
 A simple modelcaptures the essential phenomenology and explains most similarities anddifferences between 1T-Fex<missing VAR>TiS2 and 2H-Fex<missing VAR>TaS2, and providesinsights into other magnetically intercalated transition metal dichalcogenides.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[368.0, 2, 'H', 8],[317.0, 0.086, ';', 7],[274.0, 2, 'H', 6],[212.0, 1, 'T', 5],[2.0, 1, 'T', 0],[7.0, 2, 'H', 0]

TiS2
###Magnetotransport in Fe-intercalated \textit{T}S$_2$: the comparison between \textit{T} = Ti and Ta|Jesse Choe,Kyungmin Lee,C. -L. Huang,Nandini Trivedi,E. Morosan###
(106153, 106155)
 A simple modelcaptures the essential phenomenology and explains most similarities anddifferences between 1T-Fex<missing VAR>TiS2 and 2H-Fex<missing VAR>TaS2, and providesinsights into other magnetically intercalated transition metal dichalcogenides.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[370.0, 2, 'H', 8],[319.0, 0.086, ';', 7],[276.0, 2, 'H', 6],[214.0, 1, 'T', 5],[4.0, 1, 'T', 0],[3.0, 2, 'H', 0]

Fe
###Magnetotransport in Fe-intercalated \textit{T}S$_2$: the comparison between \textit{T} = Ti and Ta|Jesse Choe,Kyungmin Lee,C. -L. Huang,Nandini Trivedi,E. Morosan###
(106160, 106160)
 A simple modelcaptures the essential phenomenology and explains most similarities anddifferences between 1T-Fex<missing VAR>TiS2 and 2H-Fex<missing VAR>TaS2, and providesinsights into other magnetically intercalated transition metal dichalcogenides.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[377.0, 2, 'H', 8],[326.0, 0.086, ';', 7],[283.0, 2, 'H', 6],[221.0, 1, 'T', 5],[11.0, 1, 'T', 0],[2.0, 2, 'H', 0]

TaS2
###Magnetotransport in Fe-intercalated \textit{T}S$_2$: the comparison between \textit{T} = Ti and Ta|Jesse Choe,Kyungmin Lee,C. -L. Huang,Nandini Trivedi,E. Morosan###
(106162, 106164)
 A simple modelcaptures the essential phenomenology and explains most similarities anddifferences between 1T-Fex<missing VAR>TiS2 and 2H-Fex<missing VAR>TaS2, and providesinsights into other magnetically intercalated transition metal dichalcogenides.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[379.0, 2, 'H', 8],[328.0, 0.086, ';', 7],[285.0, 2, 'H', 6],[223.0, 1, 'T', 5],[13.0, 1, 'T', 0],[4.0, 2, 'H', 0]

CrP
###Nonsaturating large magnetoresistance in the high carrier density nonsymmorphic metal CrP|Q. Niu,W. C. Yu,E. I. Paredes Aulestia,Y. J. Hu,Kwing To Lai,H. Kotegawa,E. Matsuoka,H. Sugawara,H. Tou,D. Sun,F. F. Balakirev,Y. Yanase,Swee K. Goh###
(106217, 106218)
Nonsaturating large magnetoresistance in the high carrier density nonsymmorphic metal CrP.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[183.0, 14, 'T', 4],[196.0, 16, 'mK', 4]

CrP
###Nonsaturating large magnetoresistance in the high carrier density nonsymmorphic metal CrP|Q. Niu,W. C. Yu,E. I. Paredes Aulestia,Y. J. Hu,Kwing To Lai,H. Kotegawa,E. Matsuoka,H. Sugawara,H. Tou,D. Sun,F. F. Balakirev,Y. Yanase,Swee K. Goh###
(106237, 106238)
 The band structure of high carrier density metal CrP features an interestingcrossing at the Y point of the Brillouin zone.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 14, 'T', 3],[176.0, 16, 'mK', 3]

Y
###Nonsaturating large magnetoresistance in the high carrier density nonsymmorphic metal CrP|Q. Niu,W. C. Yu,E. I. Paredes Aulestia,Y. J. Hu,Kwing To Lai,H. Kotegawa,E. Matsuoka,H. Sugawara,H. Tou,D. Sun,F. F. Balakirev,Y. Yanase,Swee K. Goh###
(106253, 106253)
 The band structure of high carrier density metal CrP features an interestingcrossing at the Y point of the Brillouin zone.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 14, 'T', 3],[161.0, 16, 'mK', 3]

Y
###Nonsaturating large magnetoresistance in the high carrier density nonsymmorphic metal CrP|Q. Niu,W. C. Yu,E. I. Paredes Aulestia,Y. J. Hu,Kwing To Lai,H. Kotegawa,E. Matsuoka,H. Sugawara,H. Tou,D. Sun,F. F. Balakirev,Y. Yanase,Swee K. Goh###
(106321, 106321)
 The crossing, which is protectedby the nonsymmorphic symmetry of the space group, results in a hybrid,semi-Dirac-like energy-momentum dispersion relation near Y.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 14, 'T', 2],[93.0, 16, 'mK', 2]

Y
###Nonsaturating large magnetoresistance in the high carrier density nonsymmorphic metal CrP|Q. Niu,W. C. Yu,E. I. Paredes Aulestia,Y. J. Hu,Kwing To Lai,H. Kotegawa,E. Matsuoka,H. Sugawara,H. Tou,D. Sun,F. F. Balakirev,Y. Yanase,Swee K. Goh###
(106339, 106339)
 The linearenergy-momentum dispersion relation along Y-Gamma is reminiscent of theobserved band structure in several semimetallic extremely largemagnetoresistance (XMR) materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 14, 'T', 1],[75.0, 16, 'mK', 1]

CrP
###Nonsaturating large magnetoresistance in the high carrier density nonsymmorphic metal CrP|Q. Niu,W. C. Yu,E. I. Paredes Aulestia,Y. J. Hu,Kwing To Lai,H. Kotegawa,E. Matsuoka,H. Sugawara,H. Tou,D. Sun,F. F. Balakirev,Y. Yanase,Swee K. Goh###
(106395, 106396)
 We have measured the transversemagnetoresistance of CrP up to 14 T at temperatures as low as sim 16 mK.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 14, 'T', 0],[18.0, 16, 'mK', 0]

CrP
###Nonsaturating large magnetoresistance in the high carrier density nonsymmorphic metal CrP|Q. Niu,W. C. Yu,E. I. Paredes Aulestia,Y. J. Hu,Kwing To Lai,H. Kotegawa,E. Matsuoka,H. Sugawara,H. Tou,D. Sun,F. F. Balakirev,Y. Yanase,Swee K. Goh###
(106499, 106500)
 Despite the difference in the magnitude of themagnetoresistance and the fact that CrP is not a semimetal, these features arequalitatively similar to the observations reported for XMR materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 14, 'T', 2],[85.0, 16, 'mK', 2]

CrP
###Nonsaturating large magnetoresistance in the high carrier density nonsymmorphic metal CrP|Q. Niu,W. C. Yu,E. I. Paredes Aulestia,Y. J. Hu,Kwing To Lai,H. Kotegawa,E. Matsuoka,H. Sugawara,H. Tou,D. Sun,F. F. Balakirev,Y. Yanase,Swee K. Goh###
(106557, 106558)
 Thus, thehigh-field electrical transport studies of CrP offer the prospect ofidentifying the possible origin of the nonsaturating, quadraticmagnetoresistance observed in a wide range of metals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 14, 'T', 3],[143.0, 16, 'mK', 3]

B
###Observation of Large Unidirectional Rashba Magnetoresistance in Ge(111)|T. Guillet,C. Zucchetti,Q. Barbedienne,A. Marty,G. Isella,L. Cagnon,C. Vergnaud,N. Reyren,J. -M. George,A. Fert,M. Jamet###
(106762, 106762)
 Wefind a magnetoresistance term which is linear in current density j<missing VAR> and magneticfield B, hence odd in j<missing VAR> and B, corresponding to a unidirectionalmagnetoresistance.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 15, 'K', 1],[47.0, 0.33, 'A', 1],[56.0, 1, 'T', 1]

B
###Observation of Large Unidirectional Rashba Magnetoresistance in Ge(111)|T. Guillet,C. Zucchetti,Q. Barbedienne,A. Marty,G. Isella,L. Cagnon,C. Vergnaud,N. Reyren,J. -M. George,A. Fert,M. Jamet###
(106775, 106775)
 Wefind a magnetoresistance term which is linear in current density j<missing VAR> and magneticfield B, hence odd in j<missing VAR> and B, corresponding to a unidirectionalmagnetoresistance.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 15, 'K', 1],[34.0, 0.33, 'A', 1],[43.0, 1, 'T', 1]

At
###Observation of Large Unidirectional Rashba Magnetoresistance in Ge(111)|T. Guillet,C. Zucchetti,Q. Barbedienne,A. Marty,G. Isella,L. Cagnon,C. Vergnaud,N. Reyren,J. -M. George,A. Fert,M. Jamet###
(106790, 106790)
 At 15 K, for I  10 muA (or j<missing VAR>  0.33 A/m) and B  1 T, itrepresents 0.5 % of the zero field resistance, a much higher value compared toprevious reports on unidirectional magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[1.0, 15, 'K', 0],[19.0, 0.33, 'A', 0],[28.0, 1, 'T', 0]

I
###Observation of Large Unidirectional Rashba Magnetoresistance in Ge(111)|T. Guillet,C. Zucchetti,Q. Barbedienne,A. Marty,G. Isella,L. Cagnon,C. Vergnaud,N. Reyren,J. -M. George,A. Fert,M. Jamet###
(106796, 106796)
 At 15 K, for I  10 muA (or j<missing VAR>  0.33 A/m) and B  1 T, itrepresents 0.5 % of the zero field resistance, a much higher value compared toprevious reports on unidirectional magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 15, 'K', 0],[13.0, 0.33, 'A', 0],[22.0, 1, 'T', 0]

B
###Observation of Large Unidirectional Rashba Magnetoresistance in Ge(111)|T. Guillet,C. Zucchetti,Q. Barbedienne,A. Marty,G. Isella,L. Cagnon,C. Vergnaud,N. Reyren,J. -M. George,A. Fert,M. Jamet###
(106816, 106816)
 At 15 K, for I  10 muA (or j<missing VAR>  0.33 A/m) and B  1 T, itrepresents 0.5 % of the zero field resistance, a much higher value compared toprevious reports on unidirectional magnetoresistance.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 15, 'K', 0],[7.0, 0.33, 'A', 0],[2.0, 1, 'T', 0]

Ge
###Observation of Large Unidirectional Rashba Magnetoresistance in Ge(111)|T. Guillet,C. Zucchetti,Q. Barbedienne,A. Marty,G. Isella,L. Cagnon,C. Vergnaud,N. Reyren,J. -M. George,A. Fert,M. Jamet###
(106961, 106961)
 This unidirectional magnetoresistance isindependent of the current direction with respect to the Ge crystal axes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[170.0, 15, 'K', 2],[152.0, 0.33, 'A', 2],[143.0, 1, 'T', 2]

B
###Observation of Large Unidirectional Rashba Magnetoresistance in Ge(111)|T. Guillet,C. Zucchetti,Q. Barbedienne,A. Marty,G. Isella,L. Cagnon,C. Vergnaud,N. Reyren,J. -M. George,A. Fert,M. Jamet###
(107054, 107054)
 Itprogressively vanishes, either using a negative gate voltage due to carrieractivation into the bulk (without spin-splitted bands), or by increasing thetemperature due to the Rashba energy splitting of the subsurface states lowerthan sim58 k<missing VAR>B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[263.0, 15, 'K', 3],[245.0, 0.33, 'A', 3],[236.0, 1, 'T', 3]

Fe1-xGa
###Magnetoresistance in Fe$_{1-x}$Ga$_x$ thin films presenting striped magnetic pattern: the role of closure domains and domain walls|B. Pianciola,S. Flewett,E. De Biasi,C. Hepburn,L. Lounis,M. Vásquez-Mansilla,M. Granada,M. Barturen,M. Eddrief,M. Sacchi,M. Marangolo,J. Milano###
(107108, 107112)
Magnetoresistance in Fe1-xGax<missing VAR> thin films presenting striped magnetic pattern the role of closure domains and domain walls.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[350.0, 100, 'K', 5]

In
###Magnetoresistance in Fe$_{1-x}$Ga$_x$ thin films presenting striped magnetic pattern: the role of closure domains and domain walls|B. Pianciola,S. Flewett,E. De Biasi,C. Hepburn,L. Lounis,M. Vásquez-Mansilla,M. Granada,M. Barturen,M. Eddrief,M. Sacchi,M. Marangolo,J. Milano###
(107144, 107144)
 In this work we show the existence of closure domains in Fe1-xGax<missing VAR>thin films featuring a striped magnetic pattern and study the effect of themagnetic domain arrangement on the magnetotransport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[318.0, 100, 'K', 4]

Fe1-xGa
###Magnetoresistance in Fe$_{1-x}$Ga$_x$ thin films presenting striped magnetic pattern: the role of closure domains and domain walls|B. Pianciola,S. Flewett,E. De Biasi,C. Hepburn,L. Lounis,M. Vásquez-Mansilla,M. Granada,M. Barturen,M. Eddrief,M. Sacchi,M. Marangolo,J. Milano###
(107166, 107170)
 In this work we show the existence of closure domains in Fe1-xGax<missing VAR>thin films featuring a striped magnetic pattern and study the effect of themagnetic domain arrangement on the magnetotransport properties.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[292.0, 100, 'K', 4]

In
###Magnetoresistance in Fe$_{1-x}$Ga$_x$ thin films presenting striped magnetic pattern: the role of closure domains and domain walls|B. Pianciola,S. Flewett,E. De Biasi,C. Hepburn,L. Lounis,M. Vásquez-Mansilla,M. Granada,M. Barturen,M. Eddrief,M. Sacchi,M. Marangolo,J. Milano###
(107413, 107413)
 In the case of current flowing parallel to the stripedomains, the magnetoresistance changes sign, being positive at room temperatureand negative at 100 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 100, 'K', 0]

EuB6
###Possible quantum nematic in a colossal magnetoresistance material|Gabrielle Beaudin,Lucie Maude Fournier,Michael Nicklas,Michel Kenzelmann,Mark Laver,William Witczak-Krempa,Andrea D. Bianchi###
(107532, 107534)
 EuB6 has for a long time captured the attention of the physics community, asit shows a ferromagnetic phase transition leading to a insulator the metaltransition together with colossal magnetoresistance (CMR).
Featurization terminated normally.
0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Possible quantum nematic in a colossal magnetoresistance material|Gabrielle Beaudin,Lucie Maude Fournier,Michael Nicklas,Michel Kenzelmann,Mark Laver,William Witczak-Krempa,Andrea D. Bianchi###
(107600, 107600)
 EuB6 has for a long time captured the attention of the physics community, asit shows a ferromagnetic phase transition leading to a insulator the metaltransition together with colossal magnetoresistance (CMR).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuB6
###Possible quantum nematic in a colossal magnetoresistance material|Gabrielle Beaudin,Lucie Maude Fournier,Michael Nicklas,Michel Kenzelmann,Mark Laver,William Witczak-Krempa,Andrea D. Bianchi###
(107606, 107608)
 EuB6 has a very lowcarrier density, which is known to drastically change the interaction betweenthe localized Eu moments and the conduction electrons.
Featurization terminated normally.
0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Eu
###Possible quantum nematic in a colossal magnetoresistance material|Gabrielle Beaudin,Lucie Maude Fournier,Michael Nicklas,Michel Kenzelmann,Mark Laver,William Witczak-Krempa,Andrea D. Bianchi###
(107647, 107647)
 EuB6 has a very lowcarrier density, which is known to drastically change the interaction betweenthe localized Eu moments and the conduction electrons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Possible quantum nematic in a colossal magnetoresistance material|Gabrielle Beaudin,Lucie Maude Fournier,Michael Nicklas,Michel Kenzelmann,Mark Laver,William Witczak-Krempa,Andrea D. Bianchi###
(107745, 107745)
 Thissymmetry can be probed by angle resolved magnetoresistance (AMRO) measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Possible quantum nematic in a colossal magnetoresistance material|Gabrielle Beaudin,Lucie Maude Fournier,Michael Nicklas,Michel Kenzelmann,Mark Laver,William Witczak-Krempa,Andrea D. Bianchi###
(107769, 107769)
Here, we present angle resolved magnetoresistance (AMRO) measurements that showa that in EuB6 this symmetry is broken, possibly indicating the presence of aquantum nematic phase.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuB6
###Possible quantum nematic in a colossal magnetoresistance material|Gabrielle Beaudin,Lucie Maude Fournier,Michael Nicklas,Michel Kenzelmann,Mark Laver,William Witczak-Krempa,Andrea D. Bianchi###
(107785, 107787)
Here, we present angle resolved magnetoresistance (AMRO) measurements that showa that in EuB6 this symmetry is broken, possibly indicating the presence of aquantum nematic phase.
Featurization terminated normally.
0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr3Ru2O7
###Possible quantum nematic in a colossal magnetoresistance material|Gabrielle Beaudin,Lucie Maude Fournier,Michael Nicklas,Michel Kenzelmann,Mark Laver,William Witczak-Krempa,Andrea D. Bianchi###
(107960, 107965)
 Like liquid crystals, which break the rotationalsymmetry of space, their quantum analogs break the point-group symmetry of thecrystal due to strong electron-electron interactions, as in quantum Hallstates, Sr3Ru2O7, and high temperature superconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuB6
###Possible quantum nematic in a colossal magnetoresistance material|Gabrielle Beaudin,Lucie Maude Fournier,Michael Nicklas,Michel Kenzelmann,Mark Laver,William Witczak-Krempa,Andrea D. Bianchi###
(108016, 108018)
 This is the same regionwhere magnetic polarons were previously observed, suggesting that they drivethe nematicity in EuB6.
Featurization terminated normally.
0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuB6
###Possible quantum nematic in a colossal magnetoresistance material|Gabrielle Beaudin,Lucie Maude Fournier,Michael Nicklas,Michel Kenzelmann,Mark Laver,William Witczak-Krempa,Andrea D. Bianchi###
(108041, 108043)
 This is also the region of the phase diagram where EuB6shows a colossal magnetoresistance (CMR).
Featurization terminated normally.
0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Possible quantum nematic in a colossal magnetoresistance material|Gabrielle Beaudin,Lucie Maude Fournier,Michael Nicklas,Michel Kenzelmann,Mark Laver,William Witczak-Krempa,Andrea D. Bianchi###
(108055, 108055)
 This is also the region of the phase diagram where EuB6shows a colossal magnetoresistance (CMR).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ca3Ru2O7
###Two-carrier Magnetoresistance: Applications to Ca$_3$Ru$_2$O$_7$|Lakshmi Das,Yang Xu,Tian Shang,Alexander Steppke,Masafumi Horio,Jaewon Choi,Simon Jöhr,Karin von Arx,Jasmin Mueller,Dominik Biscette,Xiaofu Zhang,Andreas Schilling,Veronica Granata,Rosalba Fittipaldi,Antonio Vecchione,Johan Chang###
(108111, 108116)
Two-carrier Magnetoresistance Applications to Ca3Ru2O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[240.0, 48, 'K', 6]

Ca3Ru2O7
###Two-carrier Magnetoresistance: Applications to Ca$_3$Ru$_2$O$_7$|Lakshmi Das,Yang Xu,Tian Shang,Alexander Steppke,Masafumi Horio,Jaewon Choi,Simon Jöhr,Karin von Arx,Jasmin Mueller,Dominik Biscette,Xiaofu Zhang,Andreas Schilling,Veronica Granata,Rosalba Fittipaldi,Antonio Vecchione,Johan Chang###
(108287, 108292)
 This formulation ofthe two-band model for conductivity is applied to magnetoresistance experimentson Ca3Ru2O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 48, 'K', 1]

Ca3Ru2O7
###Two-carrier Magnetoresistance: Applications to Ca$_3$Ru$_2$O$_7$|Lakshmi Das,Yang Xu,Tian Shang,Alexander Steppke,Masafumi Horio,Jaewon Choi,Simon Jöhr,Karin von Arx,Jasmin Mueller,Dominik Biscette,Xiaofu Zhang,Andreas Schilling,Veronica Granata,Rosalba Fittipaldi,Antonio Vecchione,Johan Chang###
(108369, 108374)
 The low-temperature magnetoresistance in Ca3Ru2O7 isconsistent with a two-band structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 48, 'K', 1]

In
###Superconducting triplet pairings and anisotropic magnetoresistance effects in ferromagnet/superconductor/ferromagnet double-barrier junctions|Andreas Costa,Jaroslav Fabian###
(108754, 108754)
 In thepresence of interfacial spin-orbit couplings, special attention needs to bepaid to the spin-flip (unconventional) Andreev-reflection process that isexpected to induce superconducting triplet correlations in proximitizedregions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Superconducting triplet pairings and anisotropic magnetoresistance effects in ferromagnet/superconductor/ferromagnet double-barrier junctions|Andreas Costa,Jaroslav Fabian###
(108828, 108828)
 As a transport signature of these triplet pairings, we detectconductance double peaks around the singlet-gap energy, reflecting thecompetition between the singlet and an additionally emerging triplet gap; thelatter is an effective superconducting gap that can be ascribed to theformation of triplet Cooper pairs through interfacial spin-flip scatterings(i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnBi2Te4
###Gate-tunable magnetoresistance in six-septuple-layer MnBi$_2$Te$_4$|Yaoxin Li,Chang Liu,Yongchao Wang,Hao Li,Yang Wu,Jinsong Zhang,Yayu Wang###
(109088, 109092)
Gate-tunable magnetoresistance in six-septuple-layer MnBi2Te4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnBi2Te4
###Gate-tunable magnetoresistance in six-septuple-layer MnBi$_2$Te$_4$|Yaoxin Li,Chang Liu,Yongchao Wang,Hao Li,Yang Wu,Jinsong Zhang,Yayu Wang###
(109108, 109112)
 The recently discovered antiferromagnetic topological insulatorMnBi2Te4 hosts a variety of exotic topological quantum phases such as theaxion insulator and Chern insulator states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnBi2Te4
###Gate-tunable magnetoresistance in six-septuple-layer MnBi$_2$Te$_4$|Yaoxin Li,Chang Liu,Yongchao Wang,Hao Li,Yang Wu,Jinsong Zhang,Yayu Wang###
(109180, 109184)
 Here we report systematic gatevoltage dependent magneto transport studies in six septuple-layerMnBi2Te4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Gate-tunable magnetoresistance in six-septuple-layer MnBi$_2$Te$_4$|Yaoxin Li,Chang Liu,Yongchao Wang,Hao Li,Yang Wu,Jinsong Zhang,Yayu Wang###
(109187, 109187)
 In p<missing VAR>-type carrier regime, we observe positive linearmagnetoresistance when MnBi2Te4 is polarized in the ferromagnetic stateby an out-of-plane magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnBi2Te4
###Gate-tunable magnetoresistance in six-septuple-layer MnBi$_2$Te$_4$|Yaoxin Li,Chang Liu,Yongchao Wang,Hao Li,Yang Wu,Jinsong Zhang,Yayu Wang###
(109211, 109215)
 In p<missing VAR>-type carrier regime, we observe positive linearmagnetoresistance when MnBi2Te4 is polarized in the ferromagnetic stateby an out-of-plane magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Gate-tunable magnetoresistance in six-septuple-layer MnBi$_2$Te$_4$|Yaoxin Li,Chang Liu,Yongchao Wang,Hao Li,Yang Wu,Jinsong Zhang,Yayu Wang###
(109299, 109299)
 The magnetoresistance in both regimesis highly robust against temperature even up to the Neel temperature.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnBi2Te4
###Gate-tunable magnetoresistance in six-septuple-layer MnBi$_2$Te$_4$|Yaoxin Li,Chang Liu,Yongchao Wang,Hao Li,Yang Wu,Jinsong Zhang,Yayu Wang###
(109446, 109450)
 The rich transportphenomena demonstrate the intricate interplay between topology, magnetism anddimensionality in MnBi2Te4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(SOC)
###Rashba spin-orbit coupling enhanced magnetoresistance in junctions with one ferromagnet|Chenghao Shen,Ranran Cai,Alex Matos-Abiague,Wei Han,Jong E. Han,Igor Zutic###
(109498, 109502)
 We explain how Rashba spin-orbit coupling (SOC) in a two-dimensional electrongas (2DEG), or in a conventional s<missing VAR>-wave superconductor, can lead to a largemagnetoresistance even with one ferromagnet.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 2, 'DEG', 2]

SOC
###Rashba spin-orbit coupling enhanced magnetoresistance in junctions with one ferromagnet|Chenghao Shen,Ranran Cai,Alex Matos-Abiague,Wei Han,Jong E. Han,Igor Zutic###
(109599, 109601)
 However, such enhancedmagnetoresistance is not generic and can be nonmonotonic and change its signwith Rashba SOC.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 2, 'DEG', 1]

In
###Rashba spin-orbit coupling enhanced magnetoresistance in junctions with one ferromagnet|Chenghao Shen,Ranran Cai,Alex Matos-Abiague,Wei Han,Jong E. Han,Igor Zutic###
(109744, 109744)
 In thefabricated junctions of quasi-2D<missing VAR> van der Waals ferromagnets with conventionals<missing VAR>-wave superconductors (Fe0.29TaS2/NbN) we find another example ofenhanced magnetoresistance where the presence of Rashba SOC reduces theeffective interfacial strength and is responsible for an equal-spin Andreevreflection.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 2, 'DEG', 2]

N
###Rashba spin-orbit coupling enhanced magnetoresistance in junctions with one ferromagnet|Chenghao Shen,Ranran Cai,Alex Matos-Abiague,Wei Han,Jong E. Han,Igor Zutic###
(109787, 109787)
 In thefabricated junctions of quasi-2D<missing VAR> van der Waals ferromagnets with conventionals<missing VAR>-wave superconductors (Fe0.29TaS2/NbN) we find another example ofenhanced magnetoresistance where the presence of Rashba SOC reduces theeffective interfacial strength and is responsible for an equal-spin Andreevreflection.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 2, 'DEG', 2]

SOC
###Rashba spin-orbit coupling enhanced magnetoresistance in junctions with one ferromagnet|Chenghao Shen,Ranran Cai,Alex Matos-Abiague,Wei Han,Jong E. Han,Igor Zutic###
(109815, 109817)
 In thefabricated junctions of quasi-2D<missing VAR> van der Waals ferromagnets with conventionals<missing VAR>-wave superconductors (Fe0.29TaS2/NbN) we find another example ofenhanced magnetoresistance where the presence of Rashba SOC reduces theeffective interfacial strength and is responsible for an equal-spin Andreevreflection.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[182.0, 2, 'DEG', 2]

Pt
###Effect of Pt vacancies on magnetotransport of Weyl semimetal candidate GdPtSb epitaxial films|Dongxue Du,Laxman Raju Thoutam,Konrad T. Genser,Chenyu Zhang,Karin M. Rabe,Bharat Jalan,Paul M. Voyles,Jason K. Kawasaki###
(109915, 109915)
Effect of Pt vacancies on magnetotransport of Weyl semimetal candidate GdPtSb epitaxial films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 15, '%', 2]

GdPtSb
###Effect of Pt vacancies on magnetotransport of Weyl semimetal candidate GdPtSb epitaxial films|Dongxue Du,Laxman Raju Thoutam,Konrad T. Genser,Chenyu Zhang,Karin M. Rabe,Bharat Jalan,Paul M. Voyles,Jason K. Kawasaki###
(109931, 109933)
Effect of Pt vacancies on magnetotransport of Weyl semimetal candidate GdPtSb epitaxial films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 15, '%', 2]

Pt
###Effect of Pt vacancies on magnetotransport of Weyl semimetal candidate GdPtSb epitaxial films|Dongxue Du,Laxman Raju Thoutam,Konrad T. Genser,Chenyu Zhang,Karin M. Rabe,Bharat Jalan,Paul M. Voyles,Jason K. Kawasaki###
(109950, 109950)
 We examine the effects of Pt vacancies on the magnetotransport properties ofWeyl semimetal candidate GdPtSb films, grown by molecular beam epitaxy onc<missing VAR>-plane sapphire.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 15, '%', 1]

GdPtSb
###Effect of Pt vacancies on magnetotransport of Weyl semimetal candidate GdPtSb epitaxial films|Dongxue Du,Laxman Raju Thoutam,Konrad T. Genser,Chenyu Zhang,Karin M. Rabe,Bharat Jalan,Paul M. Voyles,Jason K. Kawasaki###
(109971, 109973)
 We examine the effects of Pt vacancies on the magnetotransport properties ofWeyl semimetal candidate GdPtSb films, grown by molecular beam epitaxy onc<missing VAR>-plane sapphire.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 15, '%', 1]

S
###Effect of Pt vacancies on magnetotransport of Weyl semimetal candidate GdPtSb epitaxial films|Dongxue Du,Laxman Raju Thoutam,Konrad T. Genser,Chenyu Zhang,Karin M. Rabe,Bharat Jalan,Paul M. Voyles,Jason K. Kawasaki###
(110007, 110007)
 Rutherford backscattering spectrometry (R<missing VAR>BS) and x<missing VAR>-raydiffraction measurements suggest that phase pure GdPtx<missing VAR>Sb films canaccommodate up to 15% Pt vacancies (x<missing VAR>0.85), which act as acceptors asmeasured by Hall effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 15, '%', 0]

GdPt
###Effect of Pt vacancies on magnetotransport of Weyl semimetal candidate GdPtSb epitaxial films|Dongxue Du,Laxman Raju Thoutam,Konrad T. Genser,Chenyu Zhang,Karin M. Rabe,Bharat Jalan,Paul M. Voyles,Jason K. Kawasaki###
(110029, 110030)
 Rutherford backscattering spectrometry (R<missing VAR>BS) and x<missing VAR>-raydiffraction measurements suggest that phase pure GdPtx<missing VAR>Sb films canaccommodate up to 15% Pt vacancies (x<missing VAR>0.85), which act as acceptors asmeasured by Hall effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 15, '%', 0]

Sb
###Effect of Pt vacancies on magnetotransport of Weyl semimetal candidate GdPtSb epitaxial films|Dongxue Du,Laxman Raju Thoutam,Konrad T. Genser,Chenyu Zhang,Karin M. Rabe,Bharat Jalan,Paul M. Voyles,Jason K. Kawasaki###
(110032, 110032)
 Rutherford backscattering spectrometry (R<missing VAR>BS) and x<missing VAR>-raydiffraction measurements suggest that phase pure GdPtx<missing VAR>Sb films canaccommodate up to 15% Pt vacancies (x<missing VAR>0.85), which act as acceptors asmeasured by Hall effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 15, '%', 0]

Pt
###Effect of Pt vacancies on magnetotransport of Weyl semimetal candidate GdPtSb epitaxial films|Dongxue Du,Laxman Raju Thoutam,Konrad T. Genser,Chenyu Zhang,Karin M. Rabe,Bharat Jalan,Paul M. Voyles,Jason K. Kawasaki###
(110048, 110048)
 Rutherford backscattering spectrometry (R<missing VAR>BS) and x<missing VAR>-raydiffraction measurements suggest that phase pure GdPtx<missing VAR>Sb films canaccommodate up to 15% Pt vacancies (x<missing VAR>0.85), which act as acceptors asmeasured by Hall effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 15, '%', 0]

Pt
###Effect of Pt vacancies on magnetotransport of Weyl semimetal candidate GdPtSb epitaxial films|Dongxue Du,Laxman Raju Thoutam,Konrad T. Genser,Chenyu Zhang,Karin M. Rabe,Bharat Jalan,Paul M. Voyles,Jason K. Kawasaki###
(110096, 110096)
 Pt-deficient films display a metallic temperature dependentresistivity (d<missing VAR>rho/dT>0).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 15, '%', 2]

B
###Effect of Pt vacancies on magnetotransport of Weyl semimetal candidate GdPtSb epitaxial films|Dongxue Du,Laxman Raju Thoutam,Konrad T. Genser,Chenyu Zhang,Karin M. Rabe,Bharat Jalan,Paul M. Voyles,Jason K. Kawasaki###
(110144, 110144)
 The longitudinal magnetoresistance (LMR, magneticfield mathbfB parallel to electric field mathbfE) is more negativethan transverse magnetoresistance (TMR, mathbfB perp mathbfE),consistent with the expected chiral anomaly for a Weyl semimetal.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 15, '%', 3]

B
###Effect of Pt vacancies on magnetotransport of Weyl semimetal candidate GdPtSb epitaxial films|Dongxue Du,Laxman Raju Thoutam,Konrad T. Genser,Chenyu Zhang,Karin M. Rabe,Bharat Jalan,Paul M. Voyles,Jason K. Kawasaki###
(110178, 110178)
 The longitudinal magnetoresistance (LMR, magneticfield mathbfB parallel to electric field mathbfE) is more negativethan transverse magnetoresistance (TMR, mathbfB perp mathbfE),consistent with the expected chiral anomaly for a Weyl semimetal.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 15, '%', 3]

Pt
###Effect of Pt vacancies on magnetotransport of Weyl semimetal candidate GdPtSb epitaxial films|Dongxue Du,Laxman Raju Thoutam,Konrad T. Genser,Chenyu Zhang,Karin M. Rabe,Bharat Jalan,Paul M. Voyles,Jason K. Kawasaki###
(110216, 110216)
 Thecombination of Pt-vacancy disorder and doping away from the expected Weylnodes; however, suggests conductivity fluctuations may explain the negative LMRrather than chiral anomaly.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[171.0, 15, '%', 4]

GdPtSb
###Effect of Pt vacancies on magnetotransport of Weyl semimetal candidate GdPtSb epitaxial films|Dongxue Du,Laxman Raju Thoutam,Konrad T. Genser,Chenyu Zhang,Karin M. Rabe,Bharat Jalan,Paul M. Voyles,Jason K. Kawasaki###
(110427, 110429)
 Ourfindings highlight the complications of transport-based identification of Weylnodes, but point to possible topological spin textures in GdPtSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[382.0, 15, '%', 7]

Mn
###Transport and magnetic properties in ferromagnetic manganese-oxide thin films|Liang-Jian Zou,X. G. Gong,Qing-Qi Zheng,C. Y. Pan###
(110523, 110523)
 The transport and magnetic properties in ferromagnetic manganese-oxide thinfilms are studied based on the model of the coupling between the mobiled<missing VAR>-electrons and the core spins in Mn ions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs/AlGaAs
###Spin Splitting and Weak Localization in (110) GaAs/AlGaAs Quantum Wells|T. Hassenkam,S. Pedersen,K. Baklanov,A. Kristensen,C. B. Sorensen,P. E. Lindelof,F. G. Pikus,G. E. Pikus###
(110775, 110780)
Spin Splitting and Weak Localization in (110) GaAs/AlGaAs Quantum Wells.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

GaAs
###Spin Splitting and Weak Localization in (110) GaAs/AlGaAs Quantum Wells|T. Hassenkam,S. Pedersen,K. Baklanov,A. Kristensen,C. B. Sorensen,P. E. Lindelof,F. G. Pikus,G. E. Pikus###
(110822, 110823)
 We investigate experimentally and theoretically the spin-orbit effects on theweak localization in a (110) GaAs 2-dimensional electron gas (2DEG).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Spin Splitting and Weak Localization in (110) GaAs/AlGaAs Quantum Wells|T. Hassenkam,S. Pedersen,K. Baklanov,A. Kristensen,C. B. Sorensen,P. E. Lindelof,F. G. Pikus,G. E. Pikus###
(110907, 110908)
 We analyzethe role of two different terms in the spin splitting of the conduction bandthe Dresselhaus terms, which arise due to the lack of inversion center in thebulk GaAs, and the Rashba terms, which are caused by the asymmetry of thequantum well.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B5
###Spin Splitting and Weak Localization in (110) GaAs/AlGaAs Quantum Wells|T. Hassenkam,S. Pedersen,K. Baklanov,A. Kristensen,C. B. Sorensen,P. E. Lindelof,F. G. Pikus,G. E. Pikus###
(110954, 110955)
 It is shown that in A3B5 quantum wells the magnetoresistance dueto the weak localization depends qualitatively on the orientation of the well.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin Splitting and Weak Localization in (110) GaAs/AlGaAs Quantum Wells|T. Hassenkam,S. Pedersen,K. Baklanov,A. Kristensen,C. B. Sorensen,P. E. Lindelof,F. G. Pikus,G. E. Pikus###
(110994, 110994)
In particular, it is demonstrated that the (110) geometry has a distinctivefeature that in the absence of the Rashba terms the antilocalizationeffect, i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeGe2
###Magnetic phase diagram and transport properties of FeGe_2|C. P. Adams,T. E. Mason,S. A. M. Mentink,E. Fawcett###
(111124, 111126)
Magnetic phase diagram and transport properties of FeGe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 16, 'T', 1],[134.0, 30, 'T', 2],[206.0, 1, 'T', 4],[315.0, 10, 'T', 6]

FeGe2
###Magnetic phase diagram and transport properties of FeGe_2|C. P. Adams,T. E. Mason,S. A. M. Mentink,E. Fawcett###
(111160, 111162)
 We have used resistivity measurements to study the magnetic phase diagram ofthe itinerant antiferromagnet FeGe2 in the temperature range from 0.3->300 Kin magnetic fields up to 16 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 16, 'T', 0],[98.0, 30, 'T', 1],[170.0, 1, 'T', 3],[279.0, 10, 'T', 5]

K
###Magnetic phase diagram and transport properties of FeGe_2|C. P. Adams,T. E. Mason,S. A. M. Mentink,E. Fawcett###
(111179, 111179)
 We have used resistivity measurements to study the magnetic phase diagram ofthe itinerant antiferromagnet FeGe2 in the temperature range from 0.3->300 Kin magnetic fields up to 16 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 16, 'T', 0],[81.0, 30, 'T', 1],[153.0, 1, 'T', 3],[262.0, 10, 'T', 5]

In
###Magnetic phase diagram and transport properties of FeGe_2|C. P. Adams,T. E. Mason,S. A. M. Mentink,E. Fawcett###
(111194, 111194)
 In contrast to theoretical predictions, theincommensurate spin density wave phase is found to be stable at least up to 16T<missing VAR>, with an estimated critical field mu 0Hc<missing VAR> of  30 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 16, 'T', 1],[66.0, 30, 'T', 0],[138.0, 1, 'T', 2],[247.0, 10, 'T', 4]

H
###Magnetic phase diagram and transport properties of FeGe_2|C. P. Adams,T. E. Mason,S. A. M. Mentink,E. Fawcett###
(111255, 111255)
 In contrast to theoretical predictions, theincommensurate spin density wave phase is found to be stable at least up to 16T<missing VAR>, with an estimated critical field mu 0Hc<missing VAR> of  30 T.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 16, 'T', 1],[5.0, 30, 'T', 0],[77.0, 1, 'T', 2],[186.0, 10, 'T', 4]

FeGe2
###Magnetic phase diagram and transport properties of FeGe_2|C. P. Adams,T. E. Mason,S. A. M. Mentink,E. Fawcett###
(111383, 111385)
 Wediscuss our results in terms of the magnetic structure and the calculatedelectronic bandstructure of FeGe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[192.0, 16, 'T', 4],[123.0, 30, 'T', 3],[51.0, 1, 'T', 1],[56.0, 10, 'T', 1]

B
###Violation of Kohler's rule by the magnetoresistance of a quasi-two-dimensional organic metal|Ross H. McKenzie,J. S. Qualls,S. Y. Han,J. S. Brooks###
(111519, 111519)
 The interlayer magnetoresistance of the quasi-two-dimensional metalalpha-(BEDT-TTF)2KHg(SCN)4 is considered.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 0.5, 'to', 1],[35.0, 10, 'K', 1],[46.0, 10, 'tesla', 1]

F
###Violation of Kohler's rule by the magnetoresistance of a quasi-two-dimensional organic metal|Ross H. McKenzie,J. S. Qualls,S. Y. Han,J. S. Brooks###
(111526, 111526)
 The interlayer magnetoresistance of the quasi-two-dimensional metalalpha-(BEDT-TTF)2KHg(SCN)4 is considered.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 0.5, 'to', 1],[28.0, 10, 'K', 1],[39.0, 10, 'tesla', 1]

KHg(SCN)4
###Violation of Kohler's rule by the magnetoresistance of a quasi-two-dimensional organic metal|Ross H. McKenzie,J. S. Qualls,S. Y. Han,J. S. Brooks###
(111529, 111536)
 The interlayer magnetoresistance of the quasi-two-dimensional metalalpha-(BEDT-TTF)2KHg(SCN)4 is considered.
Featurization terminated normally.
0,0,0,0,0,0.2857142857142857,0.2857142857142857,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0.07142857142857142,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07142857142857142,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 0.5, 'to', 1],[18.0, 10, 'K', 1],[29.0, 10, 'tesla', 1]

In
###Violation of Kohler's rule by the magnetoresistance of a quasi-two-dimensional organic metal|Ross H. McKenzie,J. S. Qualls,S. Y. Han,J. S. Brooks###
(111543, 111543)
 In the temperature rangefrom 0.5 to 10 K and for fields up to 10 tesla the magnetoresistance has astronger temperature dependence than the zero-field resistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 0.5, 'to', 0],[11.0, 10, 'K', 0],[22.0, 10, 'tesla', 0]

B0
###The transverse magnetoresistance of the two-dimensional chiral metal|J. T. Chalker,S. L. Sondhi###
(111931, 111932)
 The magnetoresistance ispositive, following a Drude form with a field scale,B0Phi0/altextel, given by the transverse field strength at whichone quantum of flux, Phi0, passes through a rectangle with sides set by thelayer-spacing, a, and the elastic mean free path, l<missing VAR>textel.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 0, ',', 0]

Tb2PdSi3
###Large Low Temperature Magnetoresistance and Magnetic Anomalies in Tb$_2$PdSi$_3$ and Dy$_2$PdSi$_3$|R. Mallik,E. V. Sampathkumaran,P. L. Paulose###
(112085, 112089)
Large Low Temperature Magnetoresistance and Magnetic Anomalies in Tb2PdSi3 and Dy2PdSi3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 23, 'and', 2],[117.0, 8, 'K', 2],[256.0, 30, '%', 4],[266.0, 60, 'kOe', 4],[272.0, 5, 'K', 4]

Dy2PdSi3
###Large Low Temperature Magnetoresistance and Magnetic Anomalies in Tb$_2$PdSi$_3$ and Dy$_2$PdSi$_3$|R. Mallik,E. V. Sampathkumaran,P. L. Paulose###
(112093, 112097)
Large Low Temperature Magnetoresistance and Magnetic Anomalies in Tb2PdSi3 and Dy2PdSi3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 23, 'and', 2],[109.0, 8, 'K', 2],[248.0, 30, '%', 4],[258.0, 60, 'kOe', 4],[264.0, 5, 'K', 4]

Tb2PdSi3
###Large Low Temperature Magnetoresistance and Magnetic Anomalies in Tb$_2$PdSi$_3$ and Dy$_2$PdSi$_3$|R. Mallik,E. V. Sampathkumaran,P. L. Paulose###
(112142, 112146)
 The results of heat-capacity, magnetic susceptibility, electrical resistivityand magnetoresistance (Delta rho/rho) measurements on the compoundsTb2PdSi3 and Dy2PdSi3, are reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 23, 'and', 1],[60.0, 8, 'K', 1],[199.0, 30, '%', 3],[209.0, 60, 'kOe', 3],[215.0, 5, 'K', 3]

Dy2PdSi3
###Large Low Temperature Magnetoresistance and Magnetic Anomalies in Tb$_2$PdSi$_3$ and Dy$_2$PdSi$_3$|R. Mallik,E. V. Sampathkumaran,P. L. Paulose###
(112150, 112154)
 The results of heat-capacity, magnetic susceptibility, electrical resistivityand magnetoresistance (Delta rho/rho) measurements on the compoundsTb2PdSi3 and Dy2PdSi3, are reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 23, 'and', 1],[52.0, 8, 'K', 1],[191.0, 30, '%', 3],[201.0, 60, 'kOe', 3],[207.0, 5, 'K', 3]

(Tc)
###Large Low Temperature Magnetoresistance and Magnetic Anomalies in Tb$_2$PdSi$_3$ and Dy$_2$PdSi$_3$|R. Mallik,E. V. Sampathkumaran,P. L. Paulose###
(112202, 112204)
 The results establish thatthese compounds undergo long-range magnetic ordering (presumably with a complexmagnetic structure) below (Tc) 23 and 8 K respectively.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[1.0, 23, 'and', 0],[2.0, 8, 'K', 0],[141.0, 30, '%', 2],[151.0, 60, 'kOe', 2],[157.0, 5, 'K', 2]

Tc
###Large Low Temperature Magnetoresistance and Magnetic Anomalies in Tb$_2$PdSi$_3$ and Dy$_2$PdSi$_3$|R. Mallik,E. V. Sampathkumaran,P. L. Paulose###
(112233, 112233)
 The Delta rho/rho is negative in the vicinity of Tc and the magnitude grows as Tc is approachedfrom higher temperature as in the case of well-known giant magnetoresistancesystems (La manganite based perovskites); this is attributed to the formationof some kind of magnetic polarons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 23, 'and', 1],[27.0, 8, 'K', 1],[112.0, 30, '%', 1],[122.0, 60, 'kOe', 1],[128.0, 5, 'K', 1]

Tc
###Large Low Temperature Magnetoresistance and Magnetic Anomalies in Tb$_2$PdSi$_3$ and Dy$_2$PdSi$_3$|R. Mallik,E. V. Sampathkumaran,P. L. Paulose###
(112245, 112245)
 The Delta rho/rho is negative in the vicinity of Tc and the magnitude grows as Tc is approachedfrom higher temperature as in the case of well-known giant magnetoresistancesystems (La manganite based perovskites); this is attributed to the formationof some kind of magnetic polarons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 23, 'and', 1],[39.0, 8, 'K', 1],[100.0, 30, '%', 1],[110.0, 60, 'kOe', 1],[116.0, 5, 'K', 1]

La
###Large Low Temperature Magnetoresistance and Magnetic Anomalies in Tb$_2$PdSi$_3$ and Dy$_2$PdSi$_3$|R. Mallik,E. V. Sampathkumaran,P. L. Paulose###
(112280, 112280)
 The Delta rho/rho is negative in the vicinity of Tc and the magnitude grows as Tc is approachedfrom higher temperature as in the case of well-known giant magnetoresistancesystems (La manganite based perovskites); this is attributed to the formationof some kind of magnetic polarons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 23, 'and', 1],[74.0, 8, 'K', 1],[65.0, 30, '%', 1],[75.0, 60, 'kOe', 1],[81.0, 5, 'K', 1]

Dy
###Large Low Temperature Magnetoresistance and Magnetic Anomalies in Tb$_2$PdSi$_3$ and Dy$_2$PdSi$_3$|R. Mallik,E. V. Sampathkumaran,P. L. Paulose###
(112367, 112367)
 The magnitude of magnetoresistance at lowtemperatures is quite large, for instance, about 30% in the presence of 60 kOefield at 5 K in the Dy sample.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 23, 'and', 2],[161.0, 8, 'K', 2],[22.0, 30, '%', 0],[12.0, 60, 'kOe', 0],[6.0, 5, 'K', 0]

LaMn2Ge2
###Residual resistivity ratio and its relation to the positive magnetoresistance behavior in natural multilayer LaMn2Ge2; relevance to artificial multilayer physics|S. Majumdar,R. Mallik,E. V. Sampathkumaran,P. L. Paulose###
(112408, 112412)
Residual resistivity ratio and its relation to the positive magnetoresistance behavior in natural multilayer LaMn2Ge2; relevance to artificial multilayer physics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 300, 'K', 1],[166.0, 4.5, 'K', 4]

C
###Residual resistivity ratio and its relation to the positive magnetoresistance behavior in natural multilayer LaMn2Ge2; relevance to artificial multilayer physics|S. Majumdar,R. Mallik,E. V. Sampathkumaran,P. L. Paulose###
(112464, 112464)
 Results of low temperature magnetoresistance (Deltarho/rho) andisothermal magnetization (M) measurements on polycrystalline ferromagnetic (T<missing VAR>Cclose to 300 K) natural multilayers, LaMn2x<missing VAR>Ge2-ySiy<missing VAR>, are reported.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 300, 'K', 0],[114.0, 4.5, 'K', 3]

LaMn2
###Residual resistivity ratio and its relation to the positive magnetoresistance behavior in natural multilayer LaMn2Ge2; relevance to artificial multilayer physics|S. Majumdar,R. Mallik,E. V. Sampathkumaran,P. L. Paulose###
(112478, 112480)
 Results of low temperature magnetoresistance (Deltarho/rho) andisothermal magnetization (M) measurements on polycrystalline ferromagnetic (T<missing VAR>Cclose to 300 K) natural multilayers, LaMn2x<missing VAR>Ge2-ySiy<missing VAR>, are reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 300, 'K', 0],[98.0, 4.5, 'K', 3]

Ge2-ySi
###Residual resistivity ratio and its relation to the positive magnetoresistance behavior in natural multilayer LaMn2Ge2; relevance to artificial multilayer physics|S. Majumdar,R. Mallik,E. V. Sampathkumaran,P. L. Paulose###
(112482, 112486)
 Results of low temperature magnetoresistance (Deltarho/rho) andisothermal magnetization (M) measurements on polycrystalline ferromagnetic (T<missing VAR>Cclose to 300 K) natural multilayers, LaMn2x<missing VAR>Ge2-ySiy<missing VAR>, are reported.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[12.0, 300, 'K', 0],[92.0, 4.5, 'K', 3]

K
###Residual resistivity ratio and its relation to the positive magnetoresistance behavior in natural multilayer LaMn2Ge2; relevance to artificial multilayer physics|S. Majumdar,R. Mallik,E. V. Sampathkumaran,P. L. Paulose###
(112523, 112523)
 Itis found that the samples with large residual resistivity ratio,rho(300K)/rho(4.2K), exhibit large positive magnetoresistance at highmagnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 300, 'K', 1],[55.0, 4.5, 'K', 2]

K
###Residual resistivity ratio and its relation to the positive magnetoresistance behavior in natural multilayer LaMn2Ge2; relevance to artificial multilayer physics|S. Majumdar,R. Mallik,E. V. Sampathkumaran,P. L. Paulose###
(112529, 112529)
 Itis found that the samples with large residual resistivity ratio,rho(300K)/rho(4.2K), exhibit large positive magnetoresistance at highmagnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 300, 'K', 1],[49.0, 4.5, 'K', 2]

In
###Residual resistivity ratio and its relation to the positive magnetoresistance behavior in natural multilayer LaMn2Ge2; relevance to artificial multilayer physics|S. Majumdar,R. Mallik,E. V. Sampathkumaran,P. L. Paulose###
(112571, 112571)
 In addition,at 4.5 K, there is a tendency towards linear variation of Deltarho/rhowith magnetic field with increasing rho(300K)/rho(4.2K); however, the fielddependence of Deltarho/rho does not track that of M<missing VAR>, thereby suggestingthat the magnetoresistance originates from non-magnetic layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 300, 'K', 3],[7.0, 4.5, 'K', 0]

K
###Residual resistivity ratio and its relation to the positive magnetoresistance behavior in natural multilayer LaMn2Ge2; relevance to artificial multilayer physics|S. Majumdar,R. Mallik,E. V. Sampathkumaran,P. L. Paulose###
(112616, 112616)
 In addition,at 4.5 K, there is a tendency towards linear variation of Deltarho/rhowith magnetic field with increasing rho(300K)/rho(4.2K); however, the fielddependence of Deltarho/rho does not track that of M<missing VAR>, thereby suggestingthat the magnetoresistance originates from non-magnetic layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 300, 'K', 3],[38.0, 4.5, 'K', 0]

K
###Residual resistivity ratio and its relation to the positive magnetoresistance behavior in natural multilayer LaMn2Ge2; relevance to artificial multilayer physics|S. Majumdar,R. Mallik,E. V. Sampathkumaran,P. L. Paulose###
(112622, 112622)
 In addition,at 4.5 K, there is a tendency towards linear variation of Deltarho/rhowith magnetic field with increasing rho(300K)/rho(4.2K); however, the fielddependence of Deltarho/rho does not track that of M<missing VAR>, thereby suggestingthat the magnetoresistance originates from non-magnetic layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 300, 'K', 3],[44.0, 4.5, 'K', 0]

GaAs/AlGaAs
###Giant transverse magnetoresistance in an asymmetric system of three GaAs/AlGaAs quantum wells in a strong magnetic field at room temperature|V. I. Tsebro,O. E. Omel'yanovskii,V. V. Kapaev,Yu. V. Kopaev,V. I. Kadushkin###
(112754, 112759)
Giant transverse magnetoresistance in an asymmetric system of three GaAs/AlGaAs quantum wells in a strong magnetic field at room temperature.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[92.0, 75, 'kOe', 2]

GaAs/AlGaAs
###Giant transverse magnetoresistance in an asymmetric system of three GaAs/AlGaAs quantum wells in a strong magnetic field at room temperature|V. I. Tsebro,O. E. Omel'yanovskii,V. V. Kapaev,Yu. V. Kopaev,V. I. Kadushkin###
(112824, 112829)
 The giant transverse magnetoresistance is observed in the case ofphotoinduced nonequilibrium carriers in an asymmetric undoped system of threeGaAs/AlGaAs quantum wells at room temperature.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[22.0, 75, 'kOe', 1]

In
###Giant transverse magnetoresistance in an asymmetric system of three GaAs/AlGaAs quantum wells in a strong magnetic field at room temperature|V. I. Tsebro,O. E. Omel'yanovskii,V. V. Kapaev,Yu. V. Kopaev,V. I. Kadushkin###
(112842, 112842)
 In a magnetic field of 75 kOe,the resistance of nanostructure being studied increases by a factor of 1.85.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 75, 'kOe', 0]

Zn
###Two lifetimes and the pseudogap in the orbital magnetoresistance of Zn-substituted La{1.85}Sr{0.15}CuO{4}|A. Malinowski,A. Krickser,Marta Z. Cieplak,S. Guha,K. Karpinska,M. Berkowski,P. Lindenfeld###
(113083, 113083)
Two lifetimes and the pseudogap in the orbital magnetoresistance of Zn-substituted La1.85Sr0.15CuO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La1.85Sr0.15CuO4
###Two lifetimes and the pseudogap in the orbital magnetoresistance of Zn-substituted La{1.85}Sr{0.15}CuO{4}|A. Malinowski,A. Krickser,Marta Z. Cieplak,S. Guha,K. Karpinska,M. Berkowski,P. Lindenfeld###
(113087, 113093)
Two lifetimes and the pseudogap in the orbital magnetoresistance of Zn-substituted La1.85Sr0.15CuO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0.02142857142857143,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2642857142857143,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La1.85Sr0.15Cu1-yZn
###Two lifetimes and the pseudogap in the orbital magnetoresistance of Zn-substituted La{1.85}Sr{0.15}CuO{4}|A. Malinowski,A. Krickser,Marta Z. Cieplak,S. Guha,K. Karpinska,M. Berkowski,P. Lindenfeld###
(113152, 113160)
 The effect of zinc doping on the anomalous temperature dependence of themagnetoresistance and the Hall effect in the normal state was studied in aseries of La1.85Sr0.15Cu1-yZny<missing VAR>O4 films, with values of y<missing VAR> between zeroand 0.12.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

O4
###Two lifetimes and the pseudogap in the orbital magnetoresistance of Zn-substituted La{1.85}Sr{0.15}CuO{4}|A. Malinowski,A. Krickser,Marta Z. Cieplak,S. Guha,K. Karpinska,M. Berkowski,P. Lindenfeld###
(113162, 113163)
 The effect of zinc doping on the anomalous temperature dependence of themagnetoresistance and the Hall effect in the normal state was studied in aseries of La1.85Sr0.15Cu1-yZny<missing VAR>O4 films, with values of y<missing VAR> between zeroand 0.12.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Zn
###Two lifetimes and the pseudogap in the orbital magnetoresistance of Zn-substituted La{1.85}Sr{0.15}CuO{4}|A. Malinowski,A. Krickser,Marta Z. Cieplak,S. Guha,K. Karpinska,M. Berkowski,P. Lindenfeld###
(113254, 113254)
 The orbital magnetoresistance at high temperatures is found to beproportional to the square of the tangent of the Hall angle, as predicted bythe model of two relaxation rates, for all Zn-doped specimens, includingnonsuperconducting films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La2-xSr
###Two lifetimes and the pseudogap in the orbital magnetoresistance of Zn-substituted La{1.85}Sr{0.15}CuO{4}|A. Malinowski,A. Krickser,Marta Z. Cieplak,S. Guha,K. Karpinska,M. Berkowski,P. Lindenfeld###
(113315, 113319)
 This is very different from the behavior observed inunderdoped La2-xSrx<missing VAR>CuO4 films where a decrease of x<missing VAR> destroys theproportionality.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

CuO4
###Two lifetimes and the pseudogap in the orbital magnetoresistance of Zn-substituted La{1.85}Sr{0.15}CuO{4}|A. Malinowski,A. Krickser,Marta Z. Cieplak,S. Guha,K. Karpinska,M. Berkowski,P. Lindenfeld###
(113321, 113323)
 This is very different from the behavior observed inunderdoped La2-xSrx<missing VAR>CuO4 films where a decrease of x<missing VAR> destroys theproportionality.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Two lifetimes and the pseudogap in the orbital magnetoresistance of Zn-substituted La{1.85}Sr{0.15}CuO{4}|A. Malinowski,A. Krickser,Marta Z. Cieplak,S. Guha,K. Karpinska,M. Berkowski,P. Lindenfeld###
(113345, 113345)
 In addition, the behavior of the orbital magnetoresistance atlow temperatures is found to be different depending on whether x<missing VAR> is changed ory<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Geometric Resonance in Modulated Quantum Hall Systems Near $ ν= 1/2$|Nataliya A. Zimbovskaya,Joseph L. Birman###
(113621, 113621)
 The structure occurs due to geometricresonance of the composite fermion cyclotron orbits with the modulation periodof the effective magnetic field  Beff  due to the applied densitymodulation.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 71.1, 'Pm', 3],[139.0, 73.4, 'Hm', 3],[141.0, 73.2, 'Dx', 3]

B
###Geometric Resonance in Modulated Quantum Hall Systems Near $ ν= 1/2$|Nataliya A. Zimbovskaya,Joseph L. Birman###
(113663, 113663)
 The transverse minimum occurs due to the inhomogeneity in the field Beff  in the presence of density modulations, whereas the longitudinalmaximum can arise due to a shape-effect (distortion) of the composite fermionFermi surface (CF-FS).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 71.1, 'Pm', 2],[97.0, 73.4, 'Hm', 2],[99.0, 73.2, 'Dx', 2]

CF
###Geometric Resonance in Modulated Quantum Hall Systems Near $ ν= 1/2$|Nataliya A. Zimbovskaya,Joseph L. Birman###
(113721, 113722)
 The transverse minimum occurs due to the inhomogeneity in the field Beff  in the presence of density modulations, whereas the longitudinalmaximum can arise due to a shape-effect (distortion) of the composite fermionFermi surface (CF-FS).
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 71.1, 'Pm', 2],[38.0, 73.4, 'Hm', 2],[40.0, 73.2, 'Dx', 2]

S
###Geometric Resonance in Modulated Quantum Hall Systems Near $ ν= 1/2$|Nataliya A. Zimbovskaya,Joseph L. Birman###
(113725, 113725)
 The transverse minimum occurs due to the inhomogeneity in the field Beff  in the presence of density modulations, whereas the longitudinalmaximum can arise due to a shape-effect (distortion) of the composite fermionFermi surface (CF-FS).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 71.1, 'Pm', 2],[35.0, 73.4, 'Hm', 2],[37.0, 73.2, 'Dx', 2]

P
###Geometric Resonance in Modulated Quantum Hall Systems Near $ ν= 1/2$|Nataliya A. Zimbovskaya,Joseph L. Birman###
(113752, 113752)
  PACS numbers 71.10 Pm, 73.40 Hm, 73.20 Dx <missing PERIOD>
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 71.1, 'Pm', 0],[8.0, 73.4, 'Hm', 0],[10.0, 73.2, 'Dx', 0]

CS
###Geometric Resonance in Modulated Quantum Hall Systems Near $ ν= 1/2$|Nataliya A. Zimbovskaya,Joseph L. Birman###
(113754, 113755)
  PACS numbers 71.10 Pm, 73.40 Hm, 73.20 Dx <missing PERIOD>
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 71.1, 'Pm', 0],[5.0, 73.4, 'Hm', 0],[7.0, 73.2, 'Dx', 0]

KHg(SCN)4
###Temperature and Angular Dependence of the Magnetoresistance in Low Dimensional Organic Metals|J. S. Qualls,J. S. Brooks,S. Uji,T. Terashima,C. Terakura,H. Aoki,L. K. Montgomery###
(113817, 113824)
 Detailed studies of the magnetoresistance of alpha-(ET)2KHg(SCN)4 andalpha-(ET)2TlHg(SCN)4 as a function of temperature, magnetic field strength,and field orientation are reported.
Featurization terminated normally.
0,0,0,0,0,0.2857142857142857,0.2857142857142857,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0.07142857142857142,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07142857142857142,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 15, 'K', 1]

TlHg(SCN)4
###Temperature and Angular Dependence of the Magnetoresistance in Low Dimensional Organic Metals|J. S. Qualls,J. S. Brooks,S. Uji,T. Terashima,C. Terakura,H. Aoki,L. K. Montgomery###
(113836, 113843)
 Detailed studies of the magnetoresistance of alpha-(ET)2KHg(SCN)4 andalpha-(ET)2TlHg(SCN)4 as a function of temperature, magnetic field strength,and field orientation are reported.
Featurization terminated normally.
0,0,0,0,0,0.2857142857142857,0.2857142857142857,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07142857142857142,0.07142857142857142,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 15, 'K', 1]

O
###Temperature and Angular Dependence of the Magnetoresistance in Low Dimensional Organic Metals|J. S. Qualls,J. S. Brooks,S. Uji,T. Terashima,C. Terakura,H. Aoki,L. K. Montgomery###
(113935, 113935)
 Below 15 K, the temperature dependence ofthe magnetoresistance is metallic (dR/dT > 0) for magnetic field orientationcorresponding to an angular dependent magnetoresistance oscillation (AMRO)minimum and nonmetallic (dR/dT < 0) at all other field orientations.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 15, 'K', 0]

O
###Temperature and Angular Dependence of the Magnetoresistance in Low Dimensional Organic Metals|J. S. Qualls,J. S. Brooks,S. Uji,T. Terashima,C. Terakura,H. Aoki,L. K. Montgomery###
(114067, 114067)
 The alternating temperaturedependence (metallic/nonmetallic)with respect to field orientation is common toany system with either quasi-one or two-dimensional AMRO.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[191.0, 15, 'K', 2]

Hg(SCN)4
###Temperature and Angular Dependence of the Magnetoresistance in Low Dimensional Organic Metals|J. S. Qualls,J. S. Brooks,S. Uji,T. Terashima,C. Terakura,H. Aoki,L. K. Montgomery###
(114113, 114119)
 Furthermore, wereport a new metallic property of the high field and low temperature regime ofalpha-(ET)2M<missing VAR>Hg(SCN)4 (where M<missing VAR>  K, Rb, or Tl) compounds.
Featurization terminated normally.
0,0,0,0,0,0.3076923076923077,0.3076923076923077,0,0,0,0,0,0,0,0,0.3076923076923077,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[237.0, 15, 'K', 3]

K
###Temperature and Angular Dependence of the Magnetoresistance in Low Dimensional Organic Metals|J. S. Qualls,J. S. Brooks,S. Uji,T. Terashima,C. Terakura,H. Aoki,L. K. Montgomery###
(114127, 114127)
 Furthermore, wereport a new metallic property of the high field and low temperature regime ofalpha-(ET)2M<missing VAR>Hg(SCN)4 (where M<missing VAR>  K, Rb, or Tl) compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[251.0, 15, 'K', 3]

Rb
###Temperature and Angular Dependence of the Magnetoresistance in Low Dimensional Organic Metals|J. S. Qualls,J. S. Brooks,S. Uji,T. Terashima,C. Terakura,H. Aoki,L. K. Montgomery###
(114130, 114130)
 Furthermore, wereport a new metallic property of the high field and low temperature regime ofalpha-(ET)2M<missing VAR>Hg(SCN)4 (where M<missing VAR>  K, Rb, or Tl) compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[254.0, 15, 'K', 3]

Tl
###Temperature and Angular Dependence of the Magnetoresistance in Low Dimensional Organic Metals|J. S. Qualls,J. S. Brooks,S. Uji,T. Terashima,C. Terakura,H. Aoki,L. K. Montgomery###
(114135, 114135)
 Furthermore, wereport a new metallic property of the high field and low temperature regime ofalpha-(ET)2M<missing VAR>Hg(SCN)4 (where M<missing VAR>  K, Rb, or Tl) compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[259.0, 15, 'K', 3]

F
###Temperature dependence of the interlayer magnetoresistance of quasi-one-dimensional Fermi liquids at the magic angles|Ross H. McKenzie,Perez Moses###
(114422, 114422)
 Although themodel considered here gives a good description of some of the properties of theBechgaard salts, (TMTSF)2PF6 for pressures less than 8kbar and (TMTSF)2ClO4 itgives a poor description of their properties when the field is parallel to thelayers and of the intralayer transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 8, 'kbar', 0]

PF6
###Temperature dependence of the interlayer magnetoresistance of quasi-one-dimensional Fermi liquids at the magic angles|Ross H. McKenzie,Perez Moses###
(114425, 114427)
 Although themodel considered here gives a good description of some of the properties of theBechgaard salts, (TMTSF)2PF6 for pressures less than 8kbar and (TMTSF)2ClO4 itgives a poor description of their properties when the field is parallel to thelayers and of the intralayer transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.8571428571428571,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 8, 'kbar', 0]

F
###Temperature dependence of the interlayer magnetoresistance of quasi-one-dimensional Fermi liquids at the magic angles|Ross H. McKenzie,Perez Moses###
(114445, 114445)
 Although themodel considered here gives a good description of some of the properties of theBechgaard salts, (TMTSF)2PF6 for pressures less than 8kbar and (TMTSF)2ClO4 itgives a poor description of their properties when the field is parallel to thelayers and of the intralayer transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 8, 'kbar', 0]

ClO4
###Temperature dependence of the interlayer magnetoresistance of quasi-one-dimensional Fermi liquids at the magic angles|Ross H. McKenzie,Perez Moses###
(114448, 114450)
 Although themodel considered here gives a good description of some of the properties of theBechgaard salts, (TMTSF)2PF6 for pressures less than 8kbar and (TMTSF)2ClO4 itgives a poor description of their properties when the field is parallel to thelayers and of the intralayer transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 8, 'kbar', 0]

La0.7Sr0.3MnO3
###Grain boundary effects on magnetotransport in bi-epitaxial films of La$_{0.7}$Sr$_{0.3}$MnO$_3$|R. Mathieu,P. Svedlindh,R. A. Chakalov,Z. G. Ivanov###
(114840, 114846)
Grain boundary effects on magnetotransport in bi-epitaxial films of La0.7Sr0.3MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[195.0, 2, 'D', 4]

La0.7Sr0.3MnO3
###Grain boundary effects on magnetotransport in bi-epitaxial films of La$_{0.7}$Sr$_{0.3}$MnO$_3$|R. Mathieu,P. Svedlindh,R. A. Chakalov,Z. G. Ivanov###
(114859, 114865)
 The low field magnetotransport of La0.7Sr0.3MnO3 (LSMO) filmsgrown on SrTiO3 substrates has been investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[176.0, 2, 'D', 3]

O
###Grain boundary effects on magnetotransport in bi-epitaxial films of La$_{0.7}$Sr$_{0.3}$MnO$_3$|R. Mathieu,P. Svedlindh,R. A. Chakalov,Z. G. Ivanov###
(114871, 114871)
 The low field magnetotransport of La0.7Sr0.3MnO3 (LSMO) filmsgrown on SrTiO3 substrates has been investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[170.0, 2, 'D', 3]

SrTiO3
###Grain boundary effects on magnetotransport in bi-epitaxial films of La$_{0.7}$Sr$_{0.3}$MnO$_3$|R. Mathieu,P. Svedlindh,R. A. Chakalov,Z. G. Ivanov###
(114881, 114884)
 The low field magnetotransport of La0.7Sr0.3MnO3 (LSMO) filmsgrown on SrTiO3 substrates has been investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 2, 'D', 3]

O
###Grain boundary effects on magnetotransport in bi-epitaxial films of La$_{0.7}$Sr$_{0.3}$MnO$_3$|R. Mathieu,P. Svedlindh,R. A. Chakalov,Z. G. Ivanov###
(114904, 114904)
 A high qualtity LSMO filmexhibits anisotropic magnetoresistance (AMR) and a peak in themagnetoresistance close to the Curie temperature of LSMO.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 2, 'D', 2]

O
###Grain boundary effects on magnetotransport in bi-epitaxial films of La$_{0.7}$Sr$_{0.3}$MnO$_3$|R. Mathieu,P. Svedlindh,R. A. Chakalov,Z. G. Ivanov###
(114949, 114949)
 A high qualtity LSMO filmexhibits anisotropic magnetoresistance (AMR) and a peak in themagnetoresistance close to the Curie temperature of LSMO.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 2, 'D', 2]

Bi
###Grain boundary effects on magnetotransport in bi-epitaxial films of La$_{0.7}$Sr$_{0.3}$MnO$_3$|R. Mathieu,P. Svedlindh,R. A. Chakalov,Z. G. Ivanov###
(114952, 114952)
 Bi-epitaxial filmsprepared using a seed layer of MgO and a buffer layer of CeO2 display aresistance dominated by grain boundaries.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 2, 'D', 1]

MgO
###Grain boundary effects on magnetotransport in bi-epitaxial films of La$_{0.7}$Sr$_{0.3}$MnO$_3$|R. Mathieu,P. Svedlindh,R. A. Chakalov,Z. G. Ivanov###
(114971, 114972)
 Bi-epitaxial filmsprepared using a seed layer of MgO and a buffer layer of CeO2 display aresistance dominated by grain boundaries.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 2, 'D', 1]

CeO2
###Grain boundary effects on magnetotransport in bi-epitaxial films of La$_{0.7}$Sr$_{0.3}$MnO$_3$|R. Mathieu,P. Svedlindh,R. A. Chakalov,Z. G. Ivanov###
(114984, 114986)
 Bi-epitaxial filmsprepared using a seed layer of MgO and a buffer layer of CeO2 display aresistance dominated by grain boundaries.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 2, 'D', 1]

Ge1-xSi
###Parallel magnetic field induced strong negative magnetoresistance in a wide p-Ge_{1-x}Si_x/Ge/p-Ge_{1-x}Si_x quantum well|M. V. Yakunin,G. A. Alshanskii,Yu. G. Arapov,V. N. Neverov,O. A. Kuznetsov###
(115216, 115220)
Parallel magnetic field induced strong negative magnetoresistance in a wide p<missing VAR>-Ge1-xSix<missing VAR>/Ge/p<missing VAR>-Ge1-xSix<missing VAR> quantum well.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[44.0, -40, '%', 1]

Ge
###Parallel magnetic field induced strong negative magnetoresistance in a wide p-Ge_{1-x}Si_x/Ge/p-Ge_{1-x}Si_x quantum well|M. V. Yakunin,G. A. Alshanskii,Yu. G. Arapov,V. N. Neverov,O. A. Kuznetsov###
(115223, 115223)
Parallel magnetic field induced strong negative magnetoresistance in a wide p<missing VAR>-Ge1-xSix<missing VAR>/Ge/p<missing VAR>-Ge1-xSix<missing VAR> quantum well.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, -40, '%', 1]

Ge1-xSi
###Parallel magnetic field induced strong negative magnetoresistance in a wide p-Ge_{1-x}Si_x/Ge/p-Ge_{1-x}Si_x quantum well|M. V. Yakunin,G. A. Alshanskii,Yu. G. Arapov,V. N. Neverov,O. A. Kuznetsov###
(115227, 115231)
Parallel magnetic field induced strong negative magnetoresistance in a wide p<missing VAR>-Ge1-xSix<missing VAR>/Ge/p<missing VAR>-Ge1-xSix<missing VAR> quantum well.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[33.0, -40, '%', 1]

Ge1-xSi
###Parallel magnetic field induced strong negative magnetoresistance in a wide p-Ge_{1-x}Si_x/Ge/p-Ge_{1-x}Si_x quantum well|M. V. Yakunin,G. A. Alshanskii,Yu. G. Arapov,V. N. Neverov,O. A. Kuznetsov###
(115302, 115306)
 A negative magnetoresistance under the in-plane magnetic field, reachingmaximum 30-40% of its zero-field value in fields higher than 12 T<missing VAR>, has beenfound in wide Ge1-xSix<missing VAR>/Ge/p<missing VAR>-Ge1-xSix<missing VAR> quantum wells (Q<missing VAR>W) containing thequasi-two-dimensional hole gas.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[38.0, -40, '%', 0]

Ge
###Parallel magnetic field induced strong negative magnetoresistance in a wide p-Ge_{1-x}Si_x/Ge/p-Ge_{1-x}Si_x quantum well|M. V. Yakunin,G. A. Alshanskii,Yu. G. Arapov,V. N. Neverov,O. A. Kuznetsov###
(115309, 115309)
 A negative magnetoresistance under the in-plane magnetic field, reachingmaximum 30-40% of its zero-field value in fields higher than 12 T<missing VAR>, has beenfound in wide Ge1-xSix<missing VAR>/Ge/p<missing VAR>-Ge1-xSix<missing VAR> quantum wells (Q<missing VAR>W) containing thequasi-two-dimensional hole gas.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, -40, '%', 0]

Ge1-xSi
###Parallel magnetic field induced strong negative magnetoresistance in a wide p-Ge_{1-x}Si_x/Ge/p-Ge_{1-x}Si_x quantum well|M. V. Yakunin,G. A. Alshanskii,Yu. G. Arapov,V. N. Neverov,O. A. Kuznetsov###
(115313, 115317)
 A negative magnetoresistance under the in-plane magnetic field, reachingmaximum 30-40% of its zero-field value in fields higher than 12 T<missing VAR>, has beenfound in wide Ge1-xSix<missing VAR>/Ge/p<missing VAR>-Ge1-xSix<missing VAR> quantum wells (Q<missing VAR>W) containing thequasi-two-dimensional hole gas.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[49.0, -40, '%', 0]

W
###Parallel magnetic field induced strong negative magnetoresistance in a wide p-Ge_{1-x}Si_x/Ge/p-Ge_{1-x}Si_x quantum well|M. V. Yakunin,G. A. Alshanskii,Yu. G. Arapov,V. N. Neverov,O. A. Kuznetsov###
(115326, 115326)
 A negative magnetoresistance under the in-plane magnetic field, reachingmaximum 30-40% of its zero-field value in fields higher than 12 T<missing VAR>, has beenfound in wide Ge1-xSix<missing VAR>/Ge/p<missing VAR>-Ge1-xSix<missing VAR> quantum wells (Q<missing VAR>W) containing thequasi-two-dimensional hole gas.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, -40, '%', 0]

In
###Parallel magnetic field induced strong negative magnetoresistance in a wide p-Ge_{1-x}Si_x/Ge/p-Ge_{1-x}Si_x quantum well|M. V. Yakunin,G. A. Alshanskii,Yu. G. Arapov,V. N. Neverov,O. A. Kuznetsov###
(115345, 115345)
 In the Q<missing VAR>Ws of intermediate widths and holedensities, this negative magnetoresistance may be explained as being caused bysuppression of the intersubband scattering due to the upper subbanddepopulation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, -40, '%', 1]

GaAs/AlGaAs
###Novel critical field in magneto-resistance oscillation of 2DEG in asymmetric GaAs/AlGaAs double wells measured as a function of the in-plane magnetic field|P. Svoboda,Y. Krupko,L. Smrcka,M. Cukr,T. Jungwirth,L. Jansen###
(115595, 115600)
Novel critical field in magneto-resistance oscillation of 2DEG in asymmetric GaAs/AlGaAs double wells measured as a function of the in-plane magnetic field.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[6.0, 2, 'DEG', 0]

AlGaAs
###Novel critical field in magneto-resistance oscillation of 2DEG in asymmetric GaAs/AlGaAs double wells measured as a function of the in-plane magnetic field|P. Svoboda,Y. Krupko,L. Smrcka,M. Cukr,T. Jungwirth,L. Jansen###
(115658, 115660)
 We have investigated the magnetoresistance of strongly asymmetric double-wellstructures formed by a thin AlGaAs barrier grown far from the interface in theGaAs buffer of standard heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 2, 'DEG', 1]

GaAs
###Novel critical field in magneto-resistance oscillation of 2DEG in asymmetric GaAs/AlGaAs double wells measured as a function of the in-plane magnetic field|P. Svoboda,Y. Krupko,L. Smrcka,M. Cukr,T. Jungwirth,L. Jansen###
(115679, 115680)
 We have investigated the magnetoresistance of strongly asymmetric double-wellstructures formed by a thin AlGaAs barrier grown far from the interface in theGaAs buffer of standard heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 2, 'DEG', 1]

In
###Novel critical field in magneto-resistance oscillation of 2DEG in asymmetric GaAs/AlGaAs double wells measured as a function of the in-plane magnetic field|P. Svoboda,Y. Krupko,L. Smrcka,M. Cukr,T. Jungwirth,L. Jansen###
(115691, 115691)
 In magnetic fields oriented parallelto the electron layers, the magnetoresistance exhibits an oscillationassociated with the depopulation of the higher occupied subband and with thefield-induced transition into a decoupled bilayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 2, 'DEG', 2]

In
###Novel critical field in magneto-resistance oscillation of 2DEG in asymmetric GaAs/AlGaAs double wells measured as a function of the in-plane magnetic field|P. Svoboda,Y. Krupko,L. Smrcka,M. Cukr,T. Jungwirth,L. Jansen###
(115762, 115762)
 In addition, the increasingfield transfers electrons from the triangular to rectangular well and, at highenough field value, the triangular well is emptied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 2, 'DEG', 3]

MgB2
###Correlation between the residual resistance ratio and magnetoresistance in MgB2|X. H. Chen,Y. S. Wang,Y. Y. Xue,R. L. Meng,Y. Q. Wang,C. W. Chu###
(115905, 115907)
Correlation between the residual resistance ratio and magnetoresistance in MgB2.
Featurization terminated normally.
0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[244.0, 0.1, 'at', 5],[245.0, 50, 'K', 5]

MgB2
###Correlation between the residual resistance ratio and magnetoresistance in MgB2|X. H. Chen,Y. S. Wang,Y. Y. Xue,R. L. Meng,Y. Q. Wang,C. W. Chu###
(115937, 115939)
 The resistivity and magnetoresistance in the normal state for bulk andthin-film MgB2 with different nominal compositions have been studiedsystematically.
Featurization terminated normally.
0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[212.0, 0.1, 'at', 4],[213.0, 50, 'K', 4]

F
###Unconventional spin density wave in (TMTSF)2PF6 below T* ~ 4K|Mario Basletic,Bojana Korin-Hamzic,Kazumi Maki###
(116222, 116222)
Unconventional spin density wave in (TMTSF)2PF6 below T<missing VAR>  4K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 4, 'K', 0],[57.0, 4, 'K', 1],[157.0, 4, 'K', 3],[228.0, 4, 'K', 4],[359.0, 4, 'K', 7]

PF6
###Unconventional spin density wave in (TMTSF)2PF6 below T* ~ 4K|Mario Basletic,Bojana Korin-Hamzic,Kazumi Maki###
(116225, 116227)
Unconventional spin density wave in (TMTSF)2PF6 below T<missing VAR>  4K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.8571428571428571,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 4, 'K', 0],[52.0, 4, 'K', 1],[152.0, 4, 'K', 3],[223.0, 4, 'K', 4],[354.0, 4, 'K', 7]

S
###Unconventional spin density wave in (TMTSF)2PF6 below T* ~ 4K|Mario Basletic,Bojana Korin-Hamzic,Kazumi Maki###
(116253, 116253)
 The presence of subphases in spin-density wave (SD<missing VAR>W) phase of (TMTSF)2PF6below T<missing VAR>  4K has been suggested by several experiments but the nature of thenew phase is still controversial.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 4, 'K', 1],[26.0, 4, 'K', 0],[126.0, 4, 'K', 2],[197.0, 4, 'K', 3],[328.0, 4, 'K', 6]

W
###Unconventional spin density wave in (TMTSF)2PF6 below T* ~ 4K|Mario Basletic,Bojana Korin-Hamzic,Kazumi Maki###
(116255, 116255)
 The presence of subphases in spin-density wave (SD<missing VAR>W) phase of (TMTSF)2PF6below T<missing VAR>  4K has been suggested by several experiments but the nature of thenew phase is still controversial.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 4, 'K', 1],[24.0, 4, 'K', 0],[124.0, 4, 'K', 2],[195.0, 4, 'K', 3],[326.0, 4, 'K', 6]

F
###Unconventional spin density wave in (TMTSF)2PF6 below T* ~ 4K|Mario Basletic,Bojana Korin-Hamzic,Kazumi Maki###
(116267, 116267)
 The presence of subphases in spin-density wave (SD<missing VAR>W) phase of (TMTSF)2PF6below T<missing VAR>  4K has been suggested by several experiments but the nature of thenew phase is still controversial.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 4, 'K', 1],[12.0, 4, 'K', 0],[112.0, 4, 'K', 2],[183.0, 4, 'K', 3],[314.0, 4, 'K', 6]

PF6
###Unconventional spin density wave in (TMTSF)2PF6 below T* ~ 4K|Mario Basletic,Bojana Korin-Hamzic,Kazumi Maki###
(116270, 116272)
 The presence of subphases in spin-density wave (SD<missing VAR>W) phase of (TMTSF)2PF6below T<missing VAR>  4K has been suggested by several experiments but the nature of thenew phase is still controversial.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.8571428571428571,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 4, 'K', 1],[7.0, 4, 'K', 0],[107.0, 4, 'K', 2],[178.0, 4, 'K', 3],[309.0, 4, 'K', 6]

S
###Unconventional spin density wave in (TMTSF)2PF6 below T* ~ 4K|Mario Basletic,Bojana Korin-Hamzic,Kazumi Maki###
(116346, 116346)
 We have investigated the temperaturedependence of the angular dependence of the magnetoresistance in the SD<missing VAR>W phasewhich shows different features for temperatures above and below T<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 4, 'K', 2],[67.0, 4, 'K', 1],[33.0, 4, 'K', 1],[104.0, 4, 'K', 2],[235.0, 4, 'K', 5]

W
###Unconventional spin density wave in (TMTSF)2PF6 below T* ~ 4K|Mario Basletic,Bojana Korin-Hamzic,Kazumi Maki###
(116348, 116348)
 We have investigated the temperaturedependence of the angular dependence of the magnetoresistance in the SD<missing VAR>W phasewhich shows different features for temperatures above and below T<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 4, 'K', 2],[69.0, 4, 'K', 1],[31.0, 4, 'K', 1],[102.0, 4, 'K', 2],[233.0, 4, 'K', 5]

S
###Unconventional spin density wave in (TMTSF)2PF6 below T* ~ 4K|Mario Basletic,Bojana Korin-Hamzic,Kazumi Maki###
(116459, 116459)
 We propose that below T<missing VAR>  4K the new unconventionalSD<missing VAR>W (USD<missing VAR>W) appears modifying dramatically the quasiparticle spectrum.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[226.0, 4, 'K', 4],[180.0, 4, 'K', 3],[80.0, 4, 'K', 1],[9.0, 4, 'K', 0],[122.0, 4, 'K', 3]

W
###Unconventional spin density wave in (TMTSF)2PF6 below T* ~ 4K|Mario Basletic,Bojana Korin-Hamzic,Kazumi Maki###
(116461, 116461)
 We propose that below T<missing VAR>  4K the new unconventionalSD<missing VAR>W (USD<missing VAR>W) appears modifying dramatically the quasiparticle spectrum.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[228.0, 4, 'K', 4],[182.0, 4, 'K', 3],[82.0, 4, 'K', 1],[11.0, 4, 'K', 0],[120.0, 4, 'K', 3]

US
###Unconventional spin density wave in (TMTSF)2PF6 below T* ~ 4K|Mario Basletic,Bojana Korin-Hamzic,Kazumi Maki###
(116464, 116465)
 We propose that below T<missing VAR>  4K the new unconventionalSD<missing VAR>W (USD<missing VAR>W) appears modifying dramatically the quasiparticle spectrum.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
[231.0, 4, 'K', 4],[185.0, 4, 'K', 3],[85.0, 4, 'K', 1],[14.0, 4, 'K', 0],[116.0, 4, 'K', 3]

W
###Unconventional spin density wave in (TMTSF)2PF6 below T* ~ 4K|Mario Basletic,Bojana Korin-Hamzic,Kazumi Maki###
(116467, 116467)
 We propose that below T<missing VAR>  4K the new unconventionalSD<missing VAR>W (USD<missing VAR>W) appears modifying dramatically the quasiparticle spectrum.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[234.0, 4, 'K', 4],[188.0, 4, 'K', 3],[88.0, 4, 'K', 1],[17.0, 4, 'K', 0],[114.0, 4, 'K', 3]

S
###Unconventional spin density wave in (TMTSF)2PF6 below T* ~ 4K|Mario Basletic,Bojana Korin-Hamzic,Kazumi Maki###
(116488, 116488)
 Unlikeconventional SD<missing VAR>W the order parameter of USD<missing VAR>W depends on the quasiparticlemomentum.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[255.0, 4, 'K', 5],[209.0, 4, 'K', 4],[109.0, 4, 'K', 2],[38.0, 4, 'K', 1],[93.0, 4, 'K', 2]

W
###Unconventional spin density wave in (TMTSF)2PF6 below T* ~ 4K|Mario Basletic,Bojana Korin-Hamzic,Kazumi Maki###
(116490, 116490)
 Unlikeconventional SD<missing VAR>W the order parameter of USD<missing VAR>W depends on the quasiparticlemomentum.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[257.0, 4, 'K', 5],[211.0, 4, 'K', 4],[111.0, 4, 'K', 2],[40.0, 4, 'K', 1],[91.0, 4, 'K', 2]

US
###Unconventional spin density wave in (TMTSF)2PF6 below T* ~ 4K|Mario Basletic,Bojana Korin-Hamzic,Kazumi Maki###
(116500, 116501)
 Unlikeconventional SD<missing VAR>W the order parameter of USD<missing VAR>W depends on the quasiparticlemomentum.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
[267.0, 4, 'K', 5],[221.0, 4, 'K', 4],[121.0, 4, 'K', 2],[50.0, 4, 'K', 1],[80.0, 4, 'K', 2]

W
###Unconventional spin density wave in (TMTSF)2PF6 below T* ~ 4K|Mario Basletic,Bojana Korin-Hamzic,Kazumi Maki###
(116503, 116503)
 Unlikeconventional SD<missing VAR>W the order parameter of USD<missing VAR>W depends on the quasiparticlemomentum.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[270.0, 4, 'K', 5],[224.0, 4, 'K', 4],[124.0, 4, 'K', 2],[53.0, 4, 'K', 1],[78.0, 4, 'K', 2]

F
###Unconventional spin density wave in (TMTSF)2PF6 below T* ~ 4K|Mario Basletic,Bojana Korin-Hamzic,Kazumi Maki###
(116570, 116570)
 Therefore, we may conclude that thesubphase in (TMTSF)2PF6 below T<missing VAR>  4K is described as SD<missing VAR>W plus USD<missing VAR>W.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[337.0, 4, 'K', 7],[291.0, 4, 'K', 6],[191.0, 4, 'K', 4],[120.0, 4, 'K', 3],[11.0, 4, 'K', 0]

PF6
###Unconventional spin density wave in (TMTSF)2PF6 below T* ~ 4K|Mario Basletic,Bojana Korin-Hamzic,Kazumi Maki###
(116573, 116575)
 Therefore, we may conclude that thesubphase in (TMTSF)2PF6 below T<missing VAR>  4K is described as SD<missing VAR>W plus USD<missing VAR>W.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.8571428571428571,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[340.0, 4, 'K', 7],[294.0, 4, 'K', 6],[194.0, 4, 'K', 4],[123.0, 4, 'K', 3],[6.0, 4, 'K', 0]

S
###Unconventional spin density wave in (TMTSF)2PF6 below T* ~ 4K|Mario Basletic,Bojana Korin-Hamzic,Kazumi Maki###
(116589, 116589)
 Therefore, we may conclude that thesubphase in (TMTSF)2PF6 below T<missing VAR>  4K is described as SD<missing VAR>W plus USD<missing VAR>W.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[356.0, 4, 'K', 7],[310.0, 4, 'K', 6],[210.0, 4, 'K', 4],[139.0, 4, 'K', 3],[8.0, 4, 'K', 0]

W
###Unconventional spin density wave in (TMTSF)2PF6 below T* ~ 4K|Mario Basletic,Bojana Korin-Hamzic,Kazumi Maki###
(116591, 116591)
 Therefore, we may conclude that thesubphase in (TMTSF)2PF6 below T<missing VAR>  4K is described as SD<missing VAR>W plus USD<missing VAR>W.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[358.0, 4, 'K', 7],[312.0, 4, 'K', 6],[212.0, 4, 'K', 4],[141.0, 4, 'K', 3],[10.0, 4, 'K', 0]

US
###Unconventional spin density wave in (TMTSF)2PF6 below T* ~ 4K|Mario Basletic,Bojana Korin-Hamzic,Kazumi Maki###
(116595, 116596)
 Therefore, we may conclude that thesubphase in (TMTSF)2PF6 below T<missing VAR>  4K is described as SD<missing VAR>W plus USD<missing VAR>W.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
[362.0, 4, 'K', 7],[316.0, 4, 'K', 6],[216.0, 4, 'K', 4],[145.0, 4, 'K', 3],[14.0, 4, 'K', 0]

W
###Unconventional spin density wave in (TMTSF)2PF6 below T* ~ 4K|Mario Basletic,Bojana Korin-Hamzic,Kazumi Maki###
(116598, 116598)
 Therefore, we may conclude that thesubphase in (TMTSF)2PF6 below T<missing VAR>  4K is described as SD<missing VAR>W plus USD<missing VAR>W.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[365.0, 4, 'K', 7],[319.0, 4, 'K', 6],[219.0, 4, 'K', 4],[148.0, 4, 'K', 3],[17.0, 4, 'K', 0]

Co
###Magnetoresistance and percolation in the LaNi(1-x)Co(x)O3 solid solution|J. Androulakis,Z. Viskadourakis,N. Katsarakis,J. Giapintzakis###
(116626, 116626)
Magnetoresistance and percolation in the LaNi(1-x)Co(x)O3 solid solution.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 0.3, '<', 1],[92.0, 0.3, '<', 2]

O3
###Magnetoresistance and percolation in the LaNi(1-x)Co(x)O3 solid solution|J. Androulakis,Z. Viskadourakis,N. Katsarakis,J. Giapintzakis###
(116630, 116631)
Magnetoresistance and percolation in the LaNi(1-x)Co(x)O3 solid solution.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 0.3, '<', 1],[87.0, 0.3, '<', 2]

LaNi1-xCo
###Magnetoresistance and percolation in the LaNi(1-x)Co(x)O3 solid solution|J. Androulakis,Z. Viskadourakis,N. Katsarakis,J. Giapintzakis###
(116673, 116678)
 A detailed study of the zero-field electrical resistivity andmagnetoresistance for the metallic members of the LaNi1-xCox<missing VAR>O3 solidsolution with 0.3<x<missing VAR><0.6 is reported.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[12.0, 0.3, '<', 0],[40.0, 0.3, '<', 1]

O3
###Magnetoresistance and percolation in the LaNi(1-x)Co(x)O3 solid solution|J. Androulakis,Z. Viskadourakis,N. Katsarakis,J. Giapintzakis###
(116680, 116681)
 A detailed study of the zero-field electrical resistivity andmagnetoresistance for the metallic members of the LaNi1-xCox<missing VAR>O3 solidsolution with 0.3<x<missing VAR><0.6 is reported.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 0.3, '<', 0],[37.0, 0.3, '<', 1]

HfNiSn
###Magnetotransport in Single Crystal Half-Heusler Compounds|K. Ahilan,M. C. Bennett,M. C. Aronson,N. E. Anderson,P. C. Canfield,E. Munoz-Sandoval,T. Gortenmulder,R. Hendrixx,J. A. Mydosh###
(117034, 117036)
 We present the results of electrical resistivity and Hall effect measurementson single crystals of HfNiSn, TiPtSn, and TiNiSn.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 9, 'Tesla', 3]

TiPtSn
###Magnetotransport in Single Crystal Half-Heusler Compounds|K. Ahilan,M. C. Bennett,M. C. Aronson,N. E. Anderson,P. C. Canfield,E. Munoz-Sandoval,T. Gortenmulder,R. Hendrixx,J. A. Mydosh###
(117039, 117041)
 We present the results of electrical resistivity and Hall effect measurementson single crystals of HfNiSn, TiPtSn, and TiNiSn.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 9, 'Tesla', 3]

TiNiSn
###Magnetotransport in Single Crystal Half-Heusler Compounds|K. Ahilan,M. C. Bennett,M. C. Aronson,N. E. Anderson,P. C. Canfield,E. Munoz-Sandoval,T. Gortenmulder,R. Hendrixx,J. A. Mydosh###
(117046, 117048)
 We present the results of electrical resistivity and Hall effect measurementson single crystals of HfNiSn, TiPtSn, and TiNiSn.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 9, 'Tesla', 3]

As
###Magnetotransport in Single Crystal Half-Heusler Compounds|K. Ahilan,M. C. Bennett,M. C. Aronson,N. E. Anderson,P. C. Canfield,E. Munoz-Sandoval,T. Gortenmulder,R. Hendrixx,J. A. Mydosh###
(117187, 117187)
 As the temperature increases,the normal quadratic magnetoresistance is regained, initially at low fields,and at the highest temperatures extending over the complete range of fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 9, 'Tesla', 1]

La1-xCa
###Extrinsic inhomogeneity effects in magnetic, transport and magnetoresistive properties of La_{1-x}Ca_{x}MnO_{3} (x\approx 0.33) crystal prepared by the floating zone method|B. I. Belevtsev,D. G. Naugle,K. D. D. Rathnayaka,A. Parasiris,J. Fink-Finowicki###
(117615, 117619)
Extrinsic inhomogeneity effects in magnetic, transport and magnetoresistive properties of La1-xCax<missing VAR>MnO3 (x<missing VAR>approx 0.33) crystal prepared by the floating zone method.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[159.0, 5, 'T', 3]

MnO3
###Extrinsic inhomogeneity effects in magnetic, transport and magnetoresistive properties of La_{1-x}Ca_{x}MnO_{3} (x\approx 0.33) crystal prepared by the floating zone method|B. I. Belevtsev,D. G. Naugle,K. D. D. Rathnayaka,A. Parasiris,J. Fink-Finowicki###
(117621, 117623)
Extrinsic inhomogeneity effects in magnetic, transport and magnetoresistive properties of La1-xCax<missing VAR>MnO3 (x<missing VAR>approx 0.33) crystal prepared by the floating zone method.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 5, 'T', 3]

La1-xCa
###Extrinsic inhomogeneity effects in magnetic, transport and magnetoresistive properties of La_{1-x}Ca_{x}MnO_{3} (x\approx 0.33) crystal prepared by the floating zone method|B. I. Belevtsev,D. G. Naugle,K. D. D. Rathnayaka,A. Parasiris,J. Fink-Finowicki###
(117675, 117679)
 The paper describes a study of the magnetic, transport and magnetoresistiveproperties of La1-xCax<missing VAR>MnO3 (x<missing VAR>approx 0.33) crystals prepared by thefloating-zone method.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[99.0, 5, 'T', 2]

MnO3
###Extrinsic inhomogeneity effects in magnetic, transport and magnetoresistive properties of La_{1-x}Ca_{x}MnO_{3} (x\approx 0.33) crystal prepared by the floating zone method|B. I. Belevtsev,D. G. Naugle,K. D. D. Rathnayaka,A. Parasiris,J. Fink-Finowicki###
(117681, 117683)
 The paper describes a study of the magnetic, transport and magnetoresistiveproperties of La1-xCax<missing VAR>MnO3 (x<missing VAR>approx 0.33) crystals prepared by thefloating-zone method.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 5, 'T', 2]

In
###Extrinsic inhomogeneity effects in magnetic, transport and magnetoresistive properties of La_{1-x}Ca_{x}MnO_{3} (x\approx 0.33) crystal prepared by the floating zone method|B. I. Belevtsev,D. G. Naugle,K. D. D. Rathnayaka,A. Parasiris,J. Fink-Finowicki###
(117740, 117740)
 In particular, a hugemagnetoresistance ([R<missing VAR>(0)-R<missing VAR>(H)]/R<missing VAR>(H) in the field H  5 T is about 2680 %) isfound near the Curie temperature (216 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 5, 'T', 0]

(H)
###Extrinsic inhomogeneity effects in magnetic, transport and magnetoresistive properties of La_{1-x}Ca_{x}MnO_{3} (x\approx 0.33) crystal prepared by the floating zone method|B. I. Belevtsev,D. G. Naugle,K. D. D. Rathnayaka,A. Parasiris,J. Fink-Finowicki###
(117760, 117762)
 In particular, a hugemagnetoresistance ([R<missing VAR>(0)-R<missing VAR>(H)]/R<missing VAR>(H) in the field H  5 T is about 2680 %) isfound near the Curie temperature (216 K).
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 5, 'T', 0]

(H)
###Extrinsic inhomogeneity effects in magnetic, transport and magnetoresistive properties of La_{1-x}Ca_{x}MnO_{3} (x\approx 0.33) crystal prepared by the floating zone method|B. I. Belevtsev,D. G. Naugle,K. D. D. Rathnayaka,A. Parasiris,J. Fink-Finowicki###
(117766, 117768)
 In particular, a hugemagnetoresistance ([R<missing VAR>(0)-R<missing VAR>(H)]/R<missing VAR>(H) in the field H  5 T is about 2680 %) isfound near the Curie temperature (216 K).
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 5, 'T', 0]

H
###Extrinsic inhomogeneity effects in magnetic, transport and magnetoresistive properties of La_{1-x}Ca_{x}MnO_{3} (x\approx 0.33) crystal prepared by the floating zone method|B. I. Belevtsev,D. G. Naugle,K. D. D. Rathnayaka,A. Parasiris,J. Fink-Finowicki###
(117776, 117776)
 In particular, a hugemagnetoresistance ([R<missing VAR>(0)-R<missing VAR>(H)]/R<missing VAR>(H) in the field H  5 T is about 2680 %) isfound near the Curie temperature (216 K).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 5, 'T', 0]

K
###Extrinsic inhomogeneity effects in magnetic, transport and magnetoresistive properties of La_{1-x}Ca_{x}MnO_{3} (x\approx 0.33) crystal prepared by the floating zone method|B. I. Belevtsev,D. G. Naugle,K. D. D. Rathnayaka,A. Parasiris,J. Fink-Finowicki###
(117805, 117805)
 In particular, a hugemagnetoresistance ([R<missing VAR>(0)-R<missing VAR>(H)]/R<missing VAR>(H) in the field H  5 T is about 2680 %) isfound near the Curie temperature (216 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 5, 'T', 0]

At
###Extrinsic inhomogeneity effects in magnetic, transport and magnetoresistive properties of La_{1-x}Ca_{x}MnO_{3} (x\approx 0.33) crystal prepared by the floating zone method|B. I. Belevtsev,D. G. Naugle,K. D. D. Rathnayaka,A. Parasiris,J. Fink-Finowicki###
(117809, 117809)
 At the same time, some distinctfeatures of measured properties indicate the influence of extrinsicinhomogeneities arising due to technological factors in the sample preparation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 5, 'T', 1]

ZnOAl
###Spin-related magnetoresistance of n-type ZnO:Al and Zn_{1-x}Mn_{x}O:Al thin films|T. Andrearczyk,J. Jaroszynski,G. Grabecki,T. Dietl,T. Fukumura,M. Kawasaki###
(117948, 117950)
Spin-related magnetoresistance of n<missing VAR>-type ZnOAl and Zn1-xMnx<missing VAR>OAl thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 50, 'mK', 1],[78.0, 3, 'and', 1],[80.0, 7, '%', 1]

Zn1-xMn
###Spin-related magnetoresistance of n-type ZnO:Al and Zn_{1-x}Mn_{x}O:Al thin films|T. Andrearczyk,J. Jaroszynski,G. Grabecki,T. Dietl,T. Fukumura,M. Kawasaki###
(117954, 117958)
Spin-related magnetoresistance of n<missing VAR>-type ZnOAl and Zn1-xMnx<missing VAR>OAl thin films.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[48.0, 50, 'mK', 1],[70.0, 3, 'and', 1],[72.0, 7, '%', 1]

OAl
###Spin-related magnetoresistance of n-type ZnO:Al and Zn_{1-x}Mn_{x}O:Al thin films|T. Andrearczyk,J. Jaroszynski,G. Grabecki,T. Dietl,T. Fukumura,M. Kawasaki###
(117960, 117961)
Spin-related magnetoresistance of n<missing VAR>-type ZnOAl and Zn1-xMnx<missing VAR>OAl thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 50, 'mK', 1],[67.0, 3, 'and', 1],[69.0, 7, '%', 1]

ZnO
###Spin-related magnetoresistance of n-type ZnO:Al and Zn_{1-x}Mn_{x}O:Al thin films|T. Andrearczyk,J. Jaroszynski,G. Grabecki,T. Dietl,T. Fukumura,M. Kawasaki###
(118010, 118011)
 Effects of spin-orbit coupling and s-d exchange interaction are probed bymagnetoresistance measurements carried out down to 50 mK on ZnO andZn1-xMnx<missing VAR>O with x<missing VAR>  3 and 7%.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 50, 'mK', 0],[17.0, 3, 'and', 0],[19.0, 7, '%', 0]

Zn1-xMn
###Spin-related magnetoresistance of n-type ZnO:Al and Zn_{1-x}Mn_{x}O:Al thin films|T. Andrearczyk,J. Jaroszynski,G. Grabecki,T. Dietl,T. Fukumura,M. Kawasaki###
(118016, 118020)
 Effects of spin-orbit coupling and s-d exchange interaction are probed bymagnetoresistance measurements carried out down to 50 mK on ZnO andZn1-xMnx<missing VAR>O with x<missing VAR>  3 and 7%.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[10.0, 50, 'mK', 0],[8.0, 3, 'and', 0],[10.0, 7, '%', 0]

O
###Spin-related magnetoresistance of n-type ZnO:Al and Zn_{1-x}Mn_{x}O:Al thin films|T. Andrearczyk,J. Jaroszynski,G. Grabecki,T. Dietl,T. Fukumura,M. Kawasaki###
(118022, 118022)
 Effects of spin-orbit coupling and s-d exchange interaction are probed bymagnetoresistance measurements carried out down to 50 mK on ZnO andZn1-xMnx<missing VAR>O with x<missing VAR>  3 and 7%.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 50, 'mK', 0],[6.0, 3, 'and', 0],[8.0, 7, '%', 0]

Al
###Spin-related magnetoresistance of n-type ZnO:Al and Zn_{1-x}Mn_{x}O:Al thin films|T. Andrearczyk,J. Jaroszynski,G. Grabecki,T. Dietl,T. Fukumura,M. Kawasaki###
(118055, 118055)
 The films were obtained by laser ablationand doped with Al to electron concentration 1020 cm-3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 50, 'mK', 1],[27.0, 3, 'and', 1],[25.0, 7, '%', 1]

ZnOAl
###Spin-related magnetoresistance of n-type ZnO:Al and Zn_{1-x}Mn_{x}O:Al thin films|T. Andrearczyk,J. Jaroszynski,G. Grabecki,T. Dietl,T. Fukumura,M. Kawasaki###
(118086, 118088)
 A quantitativedescription of the data for ZnOAl in terms of weak-localization theory makesit possible to determine the coupling constant lambdaso  (4.4 -0.4)10-11 e<missing VAR>Vcm of the kp hamiltonian for the wurzite structure, Hso lambdasoc(s x k).
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 50, 'mK', 2],[58.0, 3, 'and', 2],[56.0, 7, '%', 2]

H
###Spin-related magnetoresistance of n-type ZnO:Al and Zn_{1-x}Mn_{x}O:Al thin films|T. Andrearczyk,J. Jaroszynski,G. Grabecki,T. Dietl,T. Fukumura,M. Kawasaki###
(118155, 118155)
 A quantitativedescription of the data for ZnOAl in terms of weak-localization theory makesit possible to determine the coupling constant lambdaso  (4.4 -0.4)10-11 e<missing VAR>Vcm of the kp hamiltonian for the wurzite structure, Hso lambdasoc(s x k).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 50, 'mK', 2],[127.0, 3, 'and', 2],[125.0, 7, '%', 2]

Zn1-xMn
###Spin-related magnetoresistance of n-type ZnO:Al and Zn_{1-x}Mn_{x}O:Al thin films|T. Andrearczyk,J. Jaroszynski,G. Grabecki,T. Dietl,T. Fukumura,M. Kawasaki###
(118185, 118189)
 A complex and large magnetoresistance ofZn1-xMnx<missing VAR>OAl is interpreted in terms of the influence of the s-dspin-splitting and magnetic polaron formation on the disorder-modifiedelectron-electron interactions.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[179.0, 50, 'mK', 3],[157.0, 3, 'and', 3],[155.0, 7, '%', 3]

OAl
###Spin-related magnetoresistance of n-type ZnO:Al and Zn_{1-x}Mn_{x}O:Al thin films|T. Andrearczyk,J. Jaroszynski,G. Grabecki,T. Dietl,T. Fukumura,M. Kawasaki###
(118191, 118192)
 A complex and large magnetoresistance ofZn1-xMnx<missing VAR>OAl is interpreted in terms of the influence of the s-dspin-splitting and magnetic polaron formation on the disorder-modifiedelectron-electron interactions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[185.0, 50, 'mK', 3],[163.0, 3, 'and', 3],[161.0, 7, '%', 3]

FS
###Magnetic oscillations in a two-dimensional network of compensated electron and hole orbits|Alain Audouard,David Vignolles,Evert Haanappel,Ilya Sheikin,Rustem B. Lyubovskii,Rimma N. Lyubovskaya###
(118323, 118324)
 The FS of (ET)8Hg4Cl12(C6H5Br)2 can be regarded as a 2D network ofcompensated electron and hole orbits coupled by magnetic breakthrough.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 2, 'D', 0],[86.0, 28, 'T', 1]

Hg4Cl12(C6H5Br)2
###Magnetic oscillations in a two-dimensional network of compensated electron and hole orbits|Alain Audouard,David Vignolles,Evert Haanappel,Ilya Sheikin,Rustem B. Lyubovskii,Rimma N. Lyubovskaya###
(118333, 118344)
 The FS of (ET)8Hg4Cl12(C6H5Br)2 can be regarded as a 2D network ofcompensated electron and hole orbits coupled by magnetic breakthrough.
Featurization terminated normally.
0.25,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.05,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 2, 'D', 0],[66.0, 28, 'T', 1]

H
###Magnetic oscillations in a two-dimensional network of compensated electron and hole orbits|Alain Audouard,David Vignolles,Evert Haanappel,Ilya Sheikin,Rustem B. Lyubovskii,Rimma N. Lyubovskaya###
(118482, 118482)
Even though some of the observed magnetoresistance oscillations cannot beinterpreted on the basis of neither conventional SdH oscillations nor quantuminterference, the temperature and magnetic field (both orientation andmagnitude) dependence of all the Fourier components of the d<missing VAR>HvA spectra can beconsistently accounted for by the L<missing VAR>K formula.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 2, 'D', 3],[72.0, 28, 'T', 2]

K
###Magnetic oscillations in a two-dimensional network of compensated electron and hole orbits|Alain Audouard,David Vignolles,Evert Haanappel,Ilya Sheikin,Rustem B. Lyubovskii,Rimma N. Lyubovskaya###
(118553, 118553)
Even though some of the observed magnetoresistance oscillations cannot beinterpreted on the basis of neither conventional SdH oscillations nor quantuminterference, the temperature and magnetic field (both orientation andmagnitude) dependence of all the Fourier components of the d<missing VAR>HvA spectra can beconsistently accounted for by the L<missing VAR>K formula.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[198.0, 2, 'D', 3],[143.0, 28, 'T', 2]

Ni
###Anisotropic Magneto-Thermopower: the Contribution of Interband Relaxation|J. -E. Wegrowe,Q. Anh Nguyen,M. Al-Barki,J. -F. Dayen,T. L. Wade,H. -J. Drouhin###
(118807, 118807)
 First measurements ofanisotropic magnetothermopower are presented in electrodeposited Ni nanowirescontacted with Ni, Au and Cu.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Anisotropic Magneto-Thermopower: the Contribution of Interband Relaxation|J. -E. Wegrowe,Q. Anh Nguyen,M. Al-Barki,J. -F. Dayen,T. L. Wade,H. -J. Drouhin###
(118816, 118816)
 First measurements ofanisotropic magnetothermopower are presented in electrodeposited Ni nanowirescontacted with Ni, Au and Cu.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Au
###Anisotropic Magneto-Thermopower: the Contribution of Interband Relaxation|J. -E. Wegrowe,Q. Anh Nguyen,M. Al-Barki,J. -F. Dayen,T. L. Wade,H. -J. Drouhin###
(118819, 118819)
 First measurements ofanisotropic magnetothermopower are presented in electrodeposited Ni nanowirescontacted with Ni, Au and Cu.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Anisotropic Magneto-Thermopower: the Contribution of Interband Relaxation|J. -E. Wegrowe,Q. Anh Nguyen,M. Al-Barki,J. -F. Dayen,T. L. Wade,H. -J. Drouhin###
(118823, 118823)
 First measurements ofanisotropic magnetothermopower are presented in electrodeposited Ni nanowirescontacted with Ni, Au and Cu.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Spin injection into a short DNA chain|X. F. Wang,Tapash Chakraborty###
(118912, 118912)
Spin injection into a short D<missing VAR>NA chain.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 10, '%', 3],[160.0, 4, 'V', 3],[173.0, 20, '%', 3]

N
###Spin injection into a short DNA chain|X. F. Wang,Tapash Chakraborty###
(118931, 118931)
 Quantun spin transport through a short D<missing VAR>NA chain connected to ferromagneticelectrodes has been investigated by the transfer matrix method.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 10, '%', 2],[141.0, 4, 'V', 2],[154.0, 20, '%', 2]

(C)
###Spin injection into a short DNA chain|X. F. Wang,Tapash Chakraborty###
(119039, 119041)
 For ferromagnetic ironelectrodes, the magnetoresistance of a 30-basepair Poly(G)-Poly(C) D<missing VAR>NA is foundto be lower than 10% at a bias of < 4 V, but can rach up to 20% at a bias of 5V.
Featurization successful!
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 10, '%', 0],[31.0, 4, 'V', 0],[44.0, 20, '%', 0]

N
###Spin injection into a short DNA chain|X. F. Wang,Tapash Chakraborty###
(119044, 119044)
 For ferromagnetic ironelectrodes, the magnetoresistance of a 30-basepair Poly(G)-Poly(C) D<missing VAR>NA is foundto be lower than 10% at a bias of < 4 V, but can rach up to 20% at a bias of 5V.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 10, '%', 0],[28.0, 4, 'V', 0],[41.0, 20, '%', 0]

V
###Spin injection into a short DNA chain|X. F. Wang,Tapash Chakraborty###
(119099, 119099)
 For ferromagnetic ironelectrodes, the magnetoresistance of a 30-basepair Poly(G)-Poly(C) D<missing VAR>NA is foundto be lower than 10% at a bias of < 4 V, but can rach up to 20% at a bias of 5V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 10, '%', 0],[27.0, 4, 'V', 0],[14.0, 20, '%', 0]

In
###Spin injection into a short DNA chain|X. F. Wang,Tapash Chakraborty###
(119102, 119102)
 In the presence of the spin-flip mechanism, the magnetoresistance issignificantly enhanced when the spin-flip coupling is weak but as the couplingbecomes stronger the decreasing magnetoresistance develops an oscillatorybehavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 10, '%', 1],[30.0, 4, 'V', 1],[17.0, 20, '%', 1]

La0.7Sr0.3MnO3/BaTiO3
###The magnetotransport properties of La0.7Sr0.3MnO3/BaTiO3 superlattices grown by pulsed laser deposition technique|P. Murugavel,W. Prellier###
(119189, 119200)
The magnetotransport properties of La0.7Sr0.3MnO3/BaTiO3 superlattices grown by pulsed laser deposition technique.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

La0.7Sr0.3MnO3/BaTiO3
###The magnetotransport properties of La0.7Sr0.3MnO3/BaTiO3 superlattices grown by pulsed laser deposition technique|P. Murugavel,W. Prellier###
(119231, 119242)
 We have investigated the magnetotransport properties of La0.7Sr0.3MnO3/BaTiO3superlattices, grown on SrTiO3 substrate by pulsed laser deposition technique,both with current-in-plane and current-perpendicular-to-the-plane directions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

SrTiO3
###The magnetotransport properties of La0.7Sr0.3MnO3/BaTiO3 superlattices grown by pulsed laser deposition technique|P. Murugavel,W. Prellier###
(119252, 119255)
 We have investigated the magnetotransport properties of La0.7Sr0.3MnO3/BaTiO3superlattices, grown on SrTiO3 substrate by pulsed laser deposition technique,both with current-in-plane and current-perpendicular-to-the-plane directions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BaTiO3
###The magnetotransport properties of La0.7Sr0.3MnO3/BaTiO3 superlattices grown by pulsed laser deposition technique|P. Murugavel,W. Prellier###
(119328, 119331)
Several features indicate the presence of magnetic inhomogeneities at theinterfaces which is independent of BaTiO3 layer thickness variation.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn3Si5
###Large magnetoresistance in intermetallic compounds R2Mn3Si5 (R = Tb, Dy and Ho)|R. Nirmala,S. K. Malik,A. V. Morozkin,Y. Yamamoto,H. Hori###
(119602, 119605)
Large magnetoresistance in intermetallic compounds R<missing VAR>2Mn3Si5 (R<missing VAR>  Tb, Dy and Ho).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.625,0,0,0,0,0,0,0,0,0,0,0.375,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 2, 'K', 1],[232.0, 89, 'K', 4],[234.0, 86, 'K', 4],[236.0, 78, 'K', 4],[244.0, 18, 'K', 4],[246.0, 34, 'K', 4],[248.0, 16, 'K', 4],[303.0, 9, 'T', 5]

Tb
###Large magnetoresistance in intermetallic compounds R2Mn3Si5 (R = Tb, Dy and Ho)|R. Nirmala,S. K. Malik,A. V. Morozkin,Y. Yamamoto,H. Hori###
(119611, 119611)
Large magnetoresistance in intermetallic compounds R<missing VAR>2Mn3Si5 (R<missing VAR>  Tb, Dy and Ho).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 2, 'K', 1],[226.0, 89, 'K', 4],[228.0, 86, 'K', 4],[230.0, 78, 'K', 4],[238.0, 18, 'K', 4],[240.0, 34, 'K', 4],[242.0, 16, 'K', 4],[297.0, 9, 'T', 5]

Dy
###Large magnetoresistance in intermetallic compounds R2Mn3Si5 (R = Tb, Dy and Ho)|R. Nirmala,S. K. Malik,A. V. Morozkin,Y. Yamamoto,H. Hori###
(119614, 119614)
Large magnetoresistance in intermetallic compounds R<missing VAR>2Mn3Si5 (R<missing VAR>  Tb, Dy and Ho).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 2, 'K', 1],[223.0, 89, 'K', 4],[225.0, 86, 'K', 4],[227.0, 78, 'K', 4],[235.0, 18, 'K', 4],[237.0, 34, 'K', 4],[239.0, 16, 'K', 4],[294.0, 9, 'T', 5]

Ho
###Large magnetoresistance in intermetallic compounds R2Mn3Si5 (R = Tb, Dy and Ho)|R. Nirmala,S. K. Malik,A. V. Morozkin,Y. Yamamoto,H. Hori###
(119618, 119618)
Large magnetoresistance in intermetallic compounds R<missing VAR>2Mn3Si5 (R<missing VAR>  Tb, Dy and Ho).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 2, 'K', 1],[219.0, 89, 'K', 4],[221.0, 86, 'K', 4],[223.0, 78, 'K', 4],[231.0, 18, 'K', 4],[233.0, 34, 'K', 4],[235.0, 16, 'K', 4],[290.0, 9, 'T', 5]

Mn3Si5
###Large magnetoresistance in intermetallic compounds R2Mn3Si5 (R = Tb, Dy and Ho)|R. Nirmala,S. K. Malik,A. V. Morozkin,Y. Yamamoto,H. Hori###
(119646, 119649)
 Magnetization (M) and magnetoresistance (MR) measurements on polycrystallineR<missing VAR>2Mn3Si5 (R<missing VAR>  Tb, Dy and Ho) compounds (tetragonal, space group P4/mnc) havebeen carried out in the temperature range of 2 K-300 K, in various appliedfields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.625,0,0,0,0,0,0,0,0,0,0,0.375,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 2, 'K', 0],[188.0, 89, 'K', 3],[190.0, 86, 'K', 3],[192.0, 78, 'K', 3],[200.0, 18, 'K', 3],[202.0, 34, 'K', 3],[204.0, 16, 'K', 3],[259.0, 9, 'T', 4]

Tb
###Large magnetoresistance in intermetallic compounds R2Mn3Si5 (R = Tb, Dy and Ho)|R. Nirmala,S. K. Malik,A. V. Morozkin,Y. Yamamoto,H. Hori###
(119655, 119655)
 Magnetization (M) and magnetoresistance (MR) measurements on polycrystallineR<missing VAR>2Mn3Si5 (R<missing VAR>  Tb, Dy and Ho) compounds (tetragonal, space group P4/mnc) havebeen carried out in the temperature range of 2 K-300 K, in various appliedfields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 2, 'K', 0],[182.0, 89, 'K', 3],[184.0, 86, 'K', 3],[186.0, 78, 'K', 3],[194.0, 18, 'K', 3],[196.0, 34, 'K', 3],[198.0, 16, 'K', 3],[253.0, 9, 'T', 4]

Dy
###Large magnetoresistance in intermetallic compounds R2Mn3Si5 (R = Tb, Dy and Ho)|R. Nirmala,S. K. Malik,A. V. Morozkin,Y. Yamamoto,H. Hori###
(119658, 119658)
 Magnetization (M) and magnetoresistance (MR) measurements on polycrystallineR<missing VAR>2Mn3Si5 (R<missing VAR>  Tb, Dy and Ho) compounds (tetragonal, space group P4/mnc) havebeen carried out in the temperature range of 2 K-300 K, in various appliedfields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 2, 'K', 0],[179.0, 89, 'K', 3],[181.0, 86, 'K', 3],[183.0, 78, 'K', 3],[191.0, 18, 'K', 3],[193.0, 34, 'K', 3],[195.0, 16, 'K', 3],[250.0, 9, 'T', 4]

Ho
###Large magnetoresistance in intermetallic compounds R2Mn3Si5 (R = Tb, Dy and Ho)|R. Nirmala,S. K. Malik,A. V. Morozkin,Y. Yamamoto,H. Hori###
(119662, 119662)
 Magnetization (M) and magnetoresistance (MR) measurements on polycrystallineR<missing VAR>2Mn3Si5 (R<missing VAR>  Tb, Dy and Ho) compounds (tetragonal, space group P4/mnc) havebeen carried out in the temperature range of 2 K-300 K, in various appliedfields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 2, 'K', 0],[175.0, 89, 'K', 3],[177.0, 86, 'K', 3],[179.0, 78, 'K', 3],[187.0, 18, 'K', 3],[189.0, 34, 'K', 3],[191.0, 16, 'K', 3],[246.0, 9, 'T', 4]

P4
###Large magnetoresistance in intermetallic compounds R2Mn3Si5 (R = Tb, Dy and Ho)|R. Nirmala,S. K. Malik,A. V. Morozkin,Y. Yamamoto,H. Hori###
(119675, 119676)
 Magnetization (M) and magnetoresistance (MR) measurements on polycrystallineR<missing VAR>2Mn3Si5 (R<missing VAR>  Tb, Dy and Ho) compounds (tetragonal, space group P4/mnc) havebeen carried out in the temperature range of 2 K-300 K, in various appliedfields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 2, 'K', 0],[161.0, 89, 'K', 3],[163.0, 86, 'K', 3],[165.0, 78, 'K', 3],[173.0, 18, 'K', 3],[175.0, 34, 'K', 3],[177.0, 16, 'K', 3],[232.0, 9, 'T', 4]

K
###Large magnetoresistance in intermetallic compounds R2Mn3Si5 (R = Tb, Dy and Ho)|R. Nirmala,S. K. Malik,A. V. Morozkin,Y. Yamamoto,H. Hori###
(119703, 119703)
 Magnetization (M) and magnetoresistance (MR) measurements on polycrystallineR<missing VAR>2Mn3Si5 (R<missing VAR>  Tb, Dy and Ho) compounds (tetragonal, space group P4/mnc) havebeen carried out in the temperature range of 2 K-300 K, in various appliedfields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 2, 'K', 0],[134.0, 89, 'K', 3],[136.0, 86, 'K', 3],[138.0, 78, 'K', 3],[146.0, 18, 'K', 3],[148.0, 34, 'K', 3],[150.0, 16, 'K', 3],[205.0, 9, 'T', 4]

Mn
###Large magnetoresistance in intermetallic compounds R2Mn3Si5 (R = Tb, Dy and Ho)|R. Nirmala,S. K. Malik,A. V. Morozkin,Y. Yamamoto,H. Hori###
(119729, 119729)
 Both, the rare earth and the Mn, are found to carry magnetic moments inthese compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 2, 'K', 1],[108.0, 89, 'K', 2],[110.0, 86, 'K', 2],[112.0, 78, 'K', 2],[120.0, 18, 'K', 2],[122.0, 34, 'K', 2],[124.0, 16, 'K', 2],[179.0, 9, 'T', 3]

Mn
###Large magnetoresistance in intermetallic compounds R2Mn3Si5 (R = Tb, Dy and Ho)|R. Nirmala,S. K. Malik,A. V. Morozkin,Y. Yamamoto,H. Hori###
(119752, 119752)
 Mn has two sub-lattices (Mn1 and Mn2) that order magneticallyat two different temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 2, 'K', 2],[85.0, 89, 'K', 1],[87.0, 86, 'K', 1],[89.0, 78, 'K', 1],[97.0, 18, 'K', 1],[99.0, 34, 'K', 1],[101.0, 16, 'K', 1],[156.0, 9, 'T', 2]

Mn1
###Large magnetoresistance in intermetallic compounds R2Mn3Si5 (R = Tb, Dy and Ho)|R. Nirmala,S. K. Malik,A. V. Morozkin,Y. Yamamoto,H. Hori###
(119763, 119764)
 Mn has two sub-lattices (Mn1 and Mn2) that order magneticallyat two different temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 2, 'K', 2],[73.0, 89, 'K', 1],[75.0, 86, 'K', 1],[77.0, 78, 'K', 1],[85.0, 18, 'K', 1],[87.0, 34, 'K', 1],[89.0, 16, 'K', 1],[144.0, 9, 'T', 2]

Mn2
###Large magnetoresistance in intermetallic compounds R2Mn3Si5 (R = Tb, Dy and Ho)|R. Nirmala,S. K. Malik,A. V. Morozkin,Y. Yamamoto,H. Hori###
(119768, 119769)
 Mn has two sub-lattices (Mn1 and Mn2) that order magneticallyat two different temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 2, 'K', 2],[68.0, 89, 'K', 1],[70.0, 86, 'K', 1],[72.0, 78, 'K', 1],[80.0, 18, 'K', 1],[82.0, 34, 'K', 1],[84.0, 16, 'K', 1],[139.0, 9, 'T', 2]

Mn1
###Large magnetoresistance in intermetallic compounds R2Mn3Si5 (R = Tb, Dy and Ho)|R. Nirmala,S. K. Malik,A. V. Morozkin,Y. Yamamoto,H. Hori###
(119794, 119795)
 Rare earth and Mn1 moments orderferromagnetically at T<missing VAR>C1 whereas Mn2 is found to magnetically order at T<missing VAR>C2 (T<missing VAR>C1 89 K, 86 K, 78 K and T<missing VAR>C2  18 K, 34 K, 16 K for R<missing VAR>  Tb, Dy and Ho compounds,respectively).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 2, 'K', 3],[42.0, 89, 'K', 0],[44.0, 86, 'K', 0],[46.0, 78, 'K', 0],[54.0, 18, 'K', 0],[56.0, 34, 'K', 0],[58.0, 16, 'K', 0],[113.0, 9, 'T', 1]

C1
###Large magnetoresistance in intermetallic compounds R2Mn3Si5 (R = Tb, Dy and Ho)|R. Nirmala,S. K. Malik,A. V. Morozkin,Y. Yamamoto,H. Hori###
(119807, 119808)
 Rare earth and Mn1 moments orderferromagnetically at T<missing VAR>C1 whereas Mn2 is found to magnetically order at T<missing VAR>C2 (T<missing VAR>C1 89 K, 86 K, 78 K and T<missing VAR>C2  18 K, 34 K, 16 K for R<missing VAR>  Tb, Dy and Ho compounds,respectively).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 2, 'K', 3],[29.0, 89, 'K', 0],[31.0, 86, 'K', 0],[33.0, 78, 'K', 0],[41.0, 18, 'K', 0],[43.0, 34, 'K', 0],[45.0, 16, 'K', 0],[100.0, 9, 'T', 1]

Mn2
###Large magnetoresistance in intermetallic compounds R2Mn3Si5 (R = Tb, Dy and Ho)|R. Nirmala,S. K. Malik,A. V. Morozkin,Y. Yamamoto,H. Hori###
(119812, 119813)
 Rare earth and Mn1 moments orderferromagnetically at T<missing VAR>C1 whereas Mn2 is found to magnetically order at T<missing VAR>C2 (T<missing VAR>C1 89 K, 86 K, 78 K and T<missing VAR>C2  18 K, 34 K, 16 K for R<missing VAR>  Tb, Dy and Ho compounds,respectively).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 2, 'K', 3],[24.0, 89, 'K', 0],[26.0, 86, 'K', 0],[28.0, 78, 'K', 0],[36.0, 18, 'K', 0],[38.0, 34, 'K', 0],[40.0, 16, 'K', 0],[95.0, 9, 'T', 1]

C2
###Large magnetoresistance in intermetallic compounds R2Mn3Si5 (R = Tb, Dy and Ho)|R. Nirmala,S. K. Malik,A. V. Morozkin,Y. Yamamoto,H. Hori###
(119828, 119829)
 Rare earth and Mn1 moments orderferromagnetically at T<missing VAR>C1 whereas Mn2 is found to magnetically order at T<missing VAR>C2 (T<missing VAR>C1 89 K, 86 K, 78 K and T<missing VAR>C2  18 K, 34 K, 16 K for R<missing VAR>  Tb, Dy and Ho compounds,respectively).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 2, 'K', 3],[8.0, 89, 'K', 0],[10.0, 86, 'K', 0],[12.0, 78, 'K', 0],[20.0, 18, 'K', 0],[22.0, 34, 'K', 0],[24.0, 16, 'K', 0],[79.0, 9, 'T', 1]

C1
###Large magnetoresistance in intermetallic compounds R2Mn3Si5 (R = Tb, Dy and Ho)|R. Nirmala,S. K. Malik,A. V. Morozkin,Y. Yamamoto,H. Hori###
(119833, 119834)
 Rare earth and Mn1 moments orderferromagnetically at T<missing VAR>C1 whereas Mn2 is found to magnetically order at T<missing VAR>C2 (T<missing VAR>C1 89 K, 86 K, 78 K and T<missing VAR>C2  18 K, 34 K, 16 K for R<missing VAR>  Tb, Dy and Ho compounds,respectively).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 2, 'K', 3],[3.0, 89, 'K', 0],[5.0, 86, 'K', 0],[7.0, 78, 'K', 0],[15.0, 18, 'K', 0],[17.0, 34, 'K', 0],[19.0, 16, 'K', 0],[74.0, 9, 'T', 1]

C2
###Large magnetoresistance in intermetallic compounds R2Mn3Si5 (R = Tb, Dy and Ho)|R. Nirmala,S. K. Malik,A. V. Morozkin,Y. Yamamoto,H. Hori###
(119846, 119847)
 Rare earth and Mn1 moments orderferromagnetically at T<missing VAR>C1 whereas Mn2 is found to magnetically order at T<missing VAR>C2 (T<missing VAR>C1 89 K, 86 K, 78 K and T<missing VAR>C2  18 K, 34 K, 16 K for R<missing VAR>  Tb, Dy and Ho compounds,respectively).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 2, 'K', 3],[9.0, 89, 'K', 0],[7.0, 86, 'K', 0],[5.0, 78, 'K', 0],[2.0, 18, 'K', 0],[4.0, 34, 'K', 0],[6.0, 16, 'K', 0],[61.0, 9, 'T', 1]

Tb
###Large magnetoresistance in intermetallic compounds R2Mn3Si5 (R = Tb, Dy and Ho)|R. Nirmala,S. K. Malik,A. V. Morozkin,Y. Yamamoto,H. Hori###
(119860, 119860)
 Rare earth and Mn1 moments orderferromagnetically at T<missing VAR>C1 whereas Mn2 is found to magnetically order at T<missing VAR>C2 (T<missing VAR>C1 89 K, 86 K, 78 K and T<missing VAR>C2  18 K, 34 K, 16 K for R<missing VAR>  Tb, Dy and Ho compounds,respectively).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 2, 'K', 3],[23.0, 89, 'K', 0],[21.0, 86, 'K', 0],[19.0, 78, 'K', 0],[11.0, 18, 'K', 0],[9.0, 34, 'K', 0],[7.0, 16, 'K', 0],[48.0, 9, 'T', 1]

Dy
###Large magnetoresistance in intermetallic compounds R2Mn3Si5 (R = Tb, Dy and Ho)|R. Nirmala,S. K. Malik,A. V. Morozkin,Y. Yamamoto,H. Hori###
(119863, 119863)
 Rare earth and Mn1 moments orderferromagnetically at T<missing VAR>C1 whereas Mn2 is found to magnetically order at T<missing VAR>C2 (T<missing VAR>C1 89 K, 86 K, 78 K and T<missing VAR>C2  18 K, 34 K, 16 K for R<missing VAR>  Tb, Dy and Ho compounds,respectively).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 2, 'K', 3],[26.0, 89, 'K', 0],[24.0, 86, 'K', 0],[22.0, 78, 'K', 0],[14.0, 18, 'K', 0],[12.0, 34, 'K', 0],[10.0, 16, 'K', 0],[45.0, 9, 'T', 1]

Ho
###Large magnetoresistance in intermetallic compounds R2Mn3Si5 (R = Tb, Dy and Ho)|R. Nirmala,S. K. Malik,A. V. Morozkin,Y. Yamamoto,H. Hori###
(119867, 119867)
 Rare earth and Mn1 moments orderferromagnetically at T<missing VAR>C1 whereas Mn2 is found to magnetically order at T<missing VAR>C2 (T<missing VAR>C1 89 K, 86 K, 78 K and T<missing VAR>C2  18 K, 34 K, 16 K for R<missing VAR>  Tb, Dy and Ho compounds,respectively).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[168.0, 2, 'K', 3],[30.0, 89, 'K', 0],[28.0, 86, 'K', 0],[26.0, 78, 'K', 0],[18.0, 18, 'K', 0],[16.0, 34, 'K', 0],[14.0, 16, 'K', 0],[41.0, 9, 'T', 1]

C2
###Large magnetoresistance in intermetallic compounds R2Mn3Si5 (R = Tb, Dy and Ho)|R. Nirmala,S. K. Malik,A. V. Morozkin,Y. Yamamoto,H. Hori###
(119904, 119905)
 Magnetoresistance measurements reveal large negative MR valuesof about 50 % near T<missing VAR>C2 at 9 T in all these compounds.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, 2, 'K', 4],[67.0, 89, 'K', 1],[65.0, 86, 'K', 1],[63.0, 78, 'K', 1],[55.0, 18, 'K', 1],[53.0, 34, 'K', 1],[51.0, 16, 'K', 1],[3.0, 9, 'T', 0]

Fe
###Role of Fe substitution on the anomalous magnetocaloric and magnetoresistance behavior in Tb(Ni1-xFex)2 compounds|Niraj K. Singh,K. G. Suresh,D. S. Rana,A. K. Nigam,S. K. Malik###
(119976, 119976)
Role of Fe substitution on the anomalous magnetocaloric and magnetoresistance behavior in Tb(Ni1-xFex)2 compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 0, ',', 1],[72.0, 0.025, 'and', 1],[99.0, 36, 'K', 2],[107.0, 124, 'K', 2]

Tb
###Role of Fe substitution on the anomalous magnetocaloric and magnetoresistance behavior in Tb(Ni1-xFex)2 compounds|Niraj K. Singh,K. G. Suresh,D. S. Rana,A. K. Nigam,S. K. Malik###
(119996, 119996)
Role of Fe substitution on the anomalous magnetocaloric and magnetoresistance behavior in Tb(Ni1-xFex)2 compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 0, ',', 1],[52.0, 0.025, 'and', 1],[79.0, 36, 'K', 2],[87.0, 124, 'K', 2]

Ni1-x
###Role of Fe substitution on the anomalous magnetocaloric and magnetoresistance behavior in Tb(Ni1-xFex)2 compounds|Niraj K. Singh,K. G. Suresh,D. S. Rana,A. K. Nigam,S. K. Malik###
(119998, 120001)
Role of Fe substitution on the anomalous magnetocaloric and magnetoresistance behavior in Tb(Ni1-xFex)2 compounds.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[45.0, 0, ',', 1],[47.0, 0.025, 'and', 1],[74.0, 36, 'K', 2],[82.0, 124, 'K', 2]

Tb
###Role of Fe substitution on the anomalous magnetocaloric and magnetoresistance behavior in Tb(Ni1-xFex)2 compounds|Niraj K. Singh,K. G. Suresh,D. S. Rana,A. K. Nigam,S. K. Malik###
(120031, 120031)
 We report the magnetic, magnetocaloric and magnetoresistance results obtainedin Tb(Ni1-xFex)2 compounds with x<missing VAR>0, 0.025 and 0.05.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 0, ',', 0],[17.0, 0.025, 'and', 0],[44.0, 36, 'K', 1],[52.0, 124, 'K', 1]

Ni1-x
###Role of Fe substitution on the anomalous magnetocaloric and magnetoresistance behavior in Tb(Ni1-xFex)2 compounds|Niraj K. Singh,K. G. Suresh,D. S. Rana,A. K. Nigam,S. K. Malik###
(120033, 120036)
 We report the magnetic, magnetocaloric and magnetoresistance results obtainedin Tb(Ni1-xFex)2 compounds with x<missing VAR>0, 0.025 and 0.05.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[10.0, 0, ',', 0],[12.0, 0.025, 'and', 0],[39.0, 36, 'K', 1],[47.0, 124, 'K', 1]

Fe
###Role of Fe substitution on the anomalous magnetocaloric and magnetoresistance behavior in Tb(Ni1-xFex)2 compounds|Niraj K. Singh,K. G. Suresh,D. S. Rana,A. K. Nigam,S. K. Malik###
(120053, 120053)
 Fe substitution leads toan increase in the ordering temperature from 36 K for x<missing VAR>0 to 124 K for x<missing VAR>0.05.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 0, ',', 1],[5.0, 0.025, 'and', 1],[22.0, 36, 'K', 0],[30.0, 124, 'K', 0]

TbNi2
###Role of Fe substitution on the anomalous magnetocaloric and magnetoresistance behavior in Tb(Ni1-xFex)2 compounds|Niraj K. Singh,K. G. Suresh,D. S. Rana,A. K. Nigam,S. K. Malik###
(120112, 120114)
Contrary to a single sharp MCE peak seen in TbNi2, the MCE peaks of the Fesubstituted compounds are quite broad.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 0, ',', 2],[64.0, 0.025, 'and', 2],[37.0, 36, 'K', 1],[29.0, 124, 'K', 1]

Fe
###Role of Fe substitution on the anomalous magnetocaloric and magnetoresistance behavior in Tb(Ni1-xFex)2 compounds|Niraj K. Singh,K. G. Suresh,D. S. Rana,A. K. Nigam,S. K. Malik###
(120129, 120129)
Contrary to a single sharp MCE peak seen in TbNi2, the MCE peaks of the Fesubstituted compounds are quite broad.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 0, ',', 2],[81.0, 0.025, 'and', 2],[54.0, 36, 'K', 1],[46.0, 124, 'K', 1]

Tb
###Role of Fe substitution on the anomalous magnetocaloric and magnetoresistance behavior in Tb(Ni1-xFex)2 compounds|Niraj K. Singh,K. G. Suresh,D. S. Rana,A. K. Nigam,S. K. Malik###
(120168, 120168)
 We attribute the anomalous MCE behaviorto the randomization of the Tb moments brought about by the Fe substitution.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 0, ',', 3],[120.0, 0.025, 'and', 3],[93.0, 36, 'K', 2],[85.0, 124, 'K', 2]

Fe
###Role of Fe substitution on the anomalous magnetocaloric and magnetoresistance behavior in Tb(Ni1-xFex)2 compounds|Niraj K. Singh,K. G. Suresh,D. S. Rana,A. K. Nigam,S. K. Malik###
(120180, 120180)
 We attribute the anomalous MCE behaviorto the randomization of the Tb moments brought about by the Fe substitution.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 0, ',', 3],[132.0, 0.025, 'and', 3],[105.0, 36, 'K', 2],[97.0, 124, 'K', 2]

Ho
###Role of Fe substitution on the anomalous magnetocaloric and magnetoresistance behavior in Tb(Ni1-xFex)2 compounds|Niraj K. Singh,K. G. Suresh,D. S. Rana,A. K. Nigam,S. K. Malik###
(120252, 120252)
The present study also shows that the anomalous magnetocaloric andmagnetoresistance behavior seen in the present compounds is similar to that ofHo(Ni,Fe)2 compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[206.0, 0, ',', 5],[204.0, 0.025, 'and', 5],[177.0, 36, 'K', 4],[169.0, 124, 'K', 4]

Ni
###Role of Fe substitution on the anomalous magnetocaloric and magnetoresistance behavior in Tb(Ni1-xFex)2 compounds|Niraj K. Singh,K. G. Suresh,D. S. Rana,A. K. Nigam,S. K. Malik###
(120254, 120254)
The present study also shows that the anomalous magnetocaloric andmagnetoresistance behavior seen in the present compounds is similar to that ofHo(Ni,Fe)2 compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[208.0, 0, ',', 5],[206.0, 0.025, 'and', 5],[179.0, 36, 'K', 4],[171.0, 124, 'K', 4]

Fe
###Role of Fe substitution on the anomalous magnetocaloric and magnetoresistance behavior in Tb(Ni1-xFex)2 compounds|Niraj K. Singh,K. G. Suresh,D. S. Rana,A. K. Nigam,S. K. Malik###
(120256, 120256)
The present study also shows that the anomalous magnetocaloric andmagnetoresistance behavior seen in the present compounds is similar to that ofHo(Ni,Fe)2 compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[210.0, 0, ',', 5],[208.0, 0.025, 'and', 5],[181.0, 36, 'K', 4],[173.0, 124, 'K', 4]

Ni
###Resonant magnetoresistance in organic spin-valves|Alexandre Reily Rocha,Stefano Sanvito###
(120309, 120309)
 We investigate theoretically the effects of surface states over themagnetoresistance of Ni-based organic spin-valves.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Resonant magnetoresistance in organic spin-valves|Alexandre Reily Rocha,Stefano Sanvito###
(120320, 120320)
 In particular we performit ab initio electronic transport calculations for a benzene-thiolatemolecule chemically attached to a Ni [001] surface and contacted either by Teto another Ni [001] surface, or terminated by a thiol group and probed by a NiSTM tip.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Resonant magnetoresistance in organic spin-valves|Alexandre Reily Rocha,Stefano Sanvito###
(120360, 120360)
 In particular we performit ab initio electronic transport calculations for a benzene-thiolatemolecule chemically attached to a Ni [001] surface and contacted either by Teto another Ni [001] surface, or terminated by a thiol group and probed by a NiSTM tip.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Te
###Resonant magnetoresistance in organic spin-valves|Alexandre Reily Rocha,Stefano Sanvito###
(120376, 120376)
 In particular we performit ab initio electronic transport calculations for a benzene-thiolatemolecule chemically attached to a Ni [001] surface and contacted either by Teto another Ni [001] surface, or terminated by a thiol group and probed by a NiSTM tip.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Resonant magnetoresistance in organic spin-valves|Alexandre Reily Rocha,Stefano Sanvito###
(120383, 120383)
 In particular we performit ab initio electronic transport calculations for a benzene-thiolatemolecule chemically attached to a Ni [001] surface and contacted either by Teto another Ni [001] surface, or terminated by a thiol group and probed by a NiSTM tip.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Resonant magnetoresistance in organic spin-valves|Alexandre Reily Rocha,Stefano Sanvito###
(120412, 120412)
 In particular we performit ab initio electronic transport calculations for a benzene-thiolatemolecule chemically attached to a Ni [001] surface and contacted either by Teto another Ni [001] surface, or terminated by a thiol group and probed by a NiSTM tip.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Resonant magnetoresistance in organic spin-valves|Alexandre Reily Rocha,Stefano Sanvito###
(120415, 120415)
 In particular we performit ab initio electronic transport calculations for a benzene-thiolatemolecule chemically attached to a Ni [001] surface and contacted either by Teto another Ni [001] surface, or terminated by a thiol group and probed by a NiSTM tip.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Resonant magnetoresistance in organic spin-valves|Alexandre Reily Rocha,Stefano Sanvito###
(120422, 120422)
 In the case of S- and Te-bonded molecules we find a large asymmetry inthe spin-currents as a function of the bias, although the I-V is rathersymmetric.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Resonant magnetoresistance in organic spin-valves|Alexandre Reily Rocha,Stefano Sanvito###
(120430, 120430)
 In the case of S- and Te-bonded molecules we find a large asymmetry inthe spin-currents as a function of the bias, although the I-V is rathersymmetric.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Te
###Resonant magnetoresistance in organic spin-valves|Alexandre Reily Rocha,Stefano Sanvito###
(120435, 120435)
 In the case of S- and Te-bonded molecules we find a large asymmetry inthe spin-currents as a function of the bias, although the I-V is rathersymmetric.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Resonant magnetoresistance in organic spin-valves|Alexandre Reily Rocha,Stefano Sanvito###
(120477, 120477)
 In the case of S- and Te-bonded molecules we find a large asymmetry inthe spin-currents as a function of the bias, although the I-V is rathersymmetric.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Resonant magnetoresistance in organic spin-valves|Alexandre Reily Rocha,Stefano Sanvito###
(120479, 120479)
 In the case of S- and Te-bonded molecules we find a large asymmetry inthe spin-currents as a function of the bias, although the I-V is rathersymmetric.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Resonant magnetoresistance in organic spin-valves|Alexandre Reily Rocha,Stefano Sanvito###
(120521, 120521)
 In contrast, in the case of a STM-typegeometry we demonstrate that the spin-current and the magnetoresistance can bedrastically changed with bias.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Resonant magnetoresistance in organic spin-valves|Alexandre Reily Rocha,Stefano Sanvito###
(120536, 120536)
 In contrast, in the case of a STM-typegeometry we demonstrate that the spin-current and the magnetoresistance can bedrastically changed with bias.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

RuSr2GdCu2O8
###Magnetotransport of lanthanum doped RuSr2GdCu2O8 - the role of gadolinium|M. Pozek,A. Dulcic,A. Hamzic,M. Basletic,E. Tafra,G. V. M. Williams,S. Kraemer###
(120646, 120653)
Magnetotransport of lanthanum doped RuSr2GdCu2O8 - the role of gadolinium.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0.07142857142857142,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07142857142857142,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 9, 'T', 1],[74.0, 1.75, 'K', 1],[192.0, 155, 'K', 5],[218.0, 2.8, 'K', 5],[329.0, 4, 'K', 8]

RuSr1.9La0.1GdCu2O8
###Magnetotransport of lanthanum doped RuSr2GdCu2O8 - the role of gadolinium|M. Pozek,A. Dulcic,A. Hamzic,M. Basletic,E. Tafra,G. V. M. Williams,S. Kraemer###
(120670, 120679)
 Strongly underdoped RuSr1.9La0.1GdCu2O8 has been comprehensively studiedby dc magnetization, microwave measurements, magnetoresistivity and Hallresistivity in fields up to 9 T and temperatures down to 1.75 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0.1357142857142857,0,0,0,0,0,0.07142857142857142,0,0,0,0,0,0,0,0,0,0,0,0,0.0071428571428571435,0,0,0,0,0,0,0.07142857142857142,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 9, 'T', 0],[48.0, 1.75, 'K', 0],[166.0, 155, 'K', 4],[192.0, 2.8, 'K', 4],[303.0, 4, 'K', 7]

La
###Magnetotransport of lanthanum doped RuSr2GdCu2O8 - the role of gadolinium|M. Pozek,A. Dulcic,A. Hamzic,M. Basletic,E. Tafra,G. V. M. Williams,S. Kraemer###
(120737, 120737)
 Electrondoping by La reduces the hole concentration in the CuO2 planes and completelysuppresses superconductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 9, 'T', 1],[10.0, 1.75, 'K', 1],[108.0, 155, 'K', 3],[134.0, 2.8, 'K', 3],[245.0, 4, 'K', 6]

CuO2
###Magnetotransport of lanthanum doped RuSr2GdCu2O8 - the role of gadolinium|M. Pozek,A. Dulcic,A. Hamzic,M. Basletic,E. Tafra,G. V. M. Williams,S. Kraemer###
(120751, 120753)
 Electrondoping by La reduces the hole concentration in the CuO2 planes and completelysuppresses superconductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 9, 'T', 1],[24.0, 1.75, 'K', 1],[92.0, 155, 'K', 3],[118.0, 2.8, 'K', 3],[229.0, 4, 'K', 6]

RuO2
###Magnetotransport of lanthanum doped RuSr2GdCu2O8 - the role of gadolinium|M. Pozek,A. Dulcic,A. Hamzic,M. Basletic,E. Tafra,G. V. M. Williams,S. Kraemer###
(120940, 120942)
 It is shown that the ruthenium magnetisminfluences the conductivity in the RuO2 layers while the gadolinium magnetisminfluences the conductivity in the CuO2 layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[222.0, 9, 'T', 6],[213.0, 1.75, 'K', 6],[95.0, 155, 'K', 2],[69.0, 2.8, 'K', 2],[40.0, 4, 'K', 1]

CuO2
###Magnetotransport of lanthanum doped RuSr2GdCu2O8 - the role of gadolinium|M. Pozek,A. Dulcic,A. Hamzic,M. Basletic,E. Tafra,G. V. M. Williams,S. Kraemer###
(120965, 120967)
 It is shown that the ruthenium magnetisminfluences the conductivity in the RuO2 layers while the gadolinium magnetisminfluences the conductivity in the CuO2 layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[247.0, 9, 'T', 6],[238.0, 1.75, 'K', 6],[120.0, 155, 'K', 2],[94.0, 2.8, 'K', 2],[15.0, 4, 'K', 1]

Ni
###Is magnetoresistance in excess of 1,000 % possible in Ni point contacts?|A. R. Rocha,T. Archer,S. Sanvito###
(121031, 121031)
Is magnetoresistance in excess of 1,000 % possible in Ni point contacts?
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 1, ',', 0],[207.0, 50, '%', 4],[259.0, 1, ',', 6]

In
###Is magnetoresistance in excess of 1,000 % possible in Ni point contacts?|A. R. Rocha,T. Archer,S. Sanvito###
(121088, 121088)
 In particular we address the possibility of huge ballisticmagnetoresistance in impurity-free point contacts and the effects of oxygenimpurities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 1, ',', 2],[150.0, 50, '%', 2],[202.0, 1, ',', 4]

U
###Is magnetoresistance in excess of 1,000 % possible in Ni point contacts?|A. R. Rocha,T. Archer,S. Sanvito###
(121179, 121179)
 On-site corrections over the local spin density approximation(LSDA) for the exchange and correlation potential, namely the LDAU method, areapplied in order to account for low-coordination and strong correlations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 1, ',', 3],[59.0, 50, '%', 1],[111.0, 1, ',', 3]

Ga
###Spin-Polarized Tunneling as a probe of (Ga,Mn)As electronic properties|M. Elsen,H. Jaffres,R. Mattana,L. Thevenard,A. Lemaitre,J. -M. George###
(121676, 121676)
Spin-Polarized Tunneling as a probe of (Ga,Mn)As electronic properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 6, 'x', 3]

Mn
###Spin-Polarized Tunneling as a probe of (Ga,Mn)As electronic properties|M. Elsen,H. Jaffres,R. Mattana,L. Thevenard,A. Lemaitre,J. -M. George###
(121678, 121678)
Spin-Polarized Tunneling as a probe of (Ga,Mn)As electronic properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 6, 'x', 3]

As
###Spin-Polarized Tunneling as a probe of (Ga,Mn)As electronic properties|M. Elsen,H. Jaffres,R. Mattana,L. Thevenard,A. Lemaitre,J. -M. George###
(121680, 121680)
Spin-Polarized Tunneling as a probe of (Ga,Mn)As electronic properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 6, 'x', 3]

Ga
###Spin-Polarized Tunneling as a probe of (Ga,Mn)As electronic properties|M. Elsen,H. Jaffres,R. Mattana,L. Thevenard,A. Lemaitre,J. -M. George###
(121705, 121705)
 We present magnetic and tunnel transport properties of(Ga,Mn)As/(In,Ga)As/(Ga,Mn)As structure before and after adequate annealingprocedure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 6, 'x', 2]

Mn
###Spin-Polarized Tunneling as a probe of (Ga,Mn)As electronic properties|M. Elsen,H. Jaffres,R. Mattana,L. Thevenard,A. Lemaitre,J. -M. George###
(121707, 121707)
 We present magnetic and tunnel transport properties of(Ga,Mn)As/(In,Ga)As/(Ga,Mn)As structure before and after adequate annealingprocedure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 6, 'x', 2]

In
###Spin-Polarized Tunneling as a probe of (Ga,Mn)As electronic properties|M. Elsen,H. Jaffres,R. Mattana,L. Thevenard,A. Lemaitre,J. -M. George###
(121712, 121712)
 We present magnetic and tunnel transport properties of(Ga,Mn)As/(In,Ga)As/(Ga,Mn)As structure before and after adequate annealingprocedure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 6, 'x', 2]

Ga
###Spin-Polarized Tunneling as a probe of (Ga,Mn)As electronic properties|M. Elsen,H. Jaffres,R. Mattana,L. Thevenard,A. Lemaitre,J. -M. George###
(121714, 121714)
 We present magnetic and tunnel transport properties of(Ga,Mn)As/(In,Ga)As/(Ga,Mn)As structure before and after adequate annealingprocedure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 6, 'x', 2]

Ga
###Spin-Polarized Tunneling as a probe of (Ga,Mn)As electronic properties|M. Elsen,H. Jaffres,R. Mattana,L. Thevenard,A. Lemaitre,J. -M. George###
(121719, 121719)
 We present magnetic and tunnel transport properties of(Ga,Mn)As/(In,Ga)As/(Ga,Mn)As structure before and after adequate annealingprocedure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 6, 'x', 2]

Mn
###Spin-Polarized Tunneling as a probe of (Ga,Mn)As electronic properties|M. Elsen,H. Jaffres,R. Mattana,L. Thevenard,A. Lemaitre,J. -M. George###
(121721, 121721)
 We present magnetic and tunnel transport properties of(Ga,Mn)As/(In,Ga)As/(Ga,Mn)As structure before and after adequate annealingprocedure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 6, 'x', 2]

As
###Spin-Polarized Tunneling as a probe of (Ga,Mn)As electronic properties|M. Elsen,H. Jaffres,R. Mattana,L. Thevenard,A. Lemaitre,J. -M. George###
(121723, 121723)
 We present magnetic and tunnel transport properties of(Ga,Mn)As/(In,Ga)As/(Ga,Mn)As structure before and after adequate annealingprocedure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 6, 'x', 2]

Mn
###Spin-Polarized Tunneling as a probe of (Ga,Mn)As electronic properties|M. Elsen,H. Jaffres,R. Mattana,L. Thevenard,A. Lemaitre,J. -M. George###
(121806, 121806)
 The conjugate increase of magnetization and tunnel magnetoresistanceobtained after annealing is shown to be associated to the increase of bothexchange energy Deltaexch and hole concentration by reduction of the Mninterstitial atom in the top magnetic electrode.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 6, 'x', 1]

Ga
###Spin-Polarized Tunneling as a probe of (Ga,Mn)As electronic properties|M. Elsen,H. Jaffres,R. Mattana,L. Thevenard,A. Lemaitre,J. -M. George###
(121883, 121883)
 (Ga,Mn)As Fermienergy (E<missing VAR>F) and spin-splitting parameter (BG).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 6, 'x', 1]

Mn
###Spin-Polarized Tunneling as a probe of (Ga,Mn)As electronic properties|M. Elsen,H. Jaffres,R. Mattana,L. Thevenard,A. Lemaitre,J. -M. George###
(121885, 121885)
 (Ga,Mn)As Fermienergy (E<missing VAR>F) and spin-splitting parameter (BG).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 6, 'x', 1]

As
###Spin-Polarized Tunneling as a probe of (Ga,Mn)As electronic properties|M. Elsen,H. Jaffres,R. Mattana,L. Thevenard,A. Lemaitre,J. -M. George###
(121887, 121887)
 (Ga,Mn)As Fermienergy (E<missing VAR>F) and spin-splitting parameter (BG).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 6, 'x', 1]

F
###Spin-Polarized Tunneling as a probe of (Ga,Mn)As electronic properties|M. Elsen,H. Jaffres,R. Mattana,L. Thevenard,A. Lemaitre,J. -M. George###
(121896, 121896)
 (Ga,Mn)As Fermienergy (E<missing VAR>F) and spin-splitting parameter (BG).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 6, 'x', 1]

B
###Spin-Polarized Tunneling as a probe of (Ga,Mn)As electronic properties|M. Elsen,H. Jaffres,R. Mattana,L. Thevenard,A. Lemaitre,J. -M. George###
(121908, 121908)
 (Ga,Mn)As Fermienergy (E<missing VAR>F) and spin-splitting parameter (BG).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 6, 'x', 1]

B
###Spin-Polarized Tunneling as a probe of (Ga,Mn)As electronic properties|M. Elsen,H. Jaffres,R. Mattana,L. Thevenard,A. Lemaitre,J. -M. George###
(121939, 121939)
 This allows to give arough estimation of the exchange energy Deltaexch6BG<missing VAR>simeq120 meVand hole concentration p<missing VAR>simeq1.1020cm-3 of (Ga,Mn)As and beyondgives the general trend of TMR and TAMR textitvs.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 6, 'x', 2]

V
###Spin-Polarized Tunneling as a probe of (Ga,Mn)As electronic properties|M. Elsen,H. Jaffres,R. Mattana,L. Thevenard,A. Lemaitre,J. -M. George###
(121945, 121945)
 This allows to give arough estimation of the exchange energy Deltaexch6BG<missing VAR>simeq120 meVand hole concentration p<missing VAR>simeq1.1020cm-3 of (Ga,Mn)As and beyondgives the general trend of TMR and TAMR textitvs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 6, 'x', 2]

Ga
###Spin-Polarized Tunneling as a probe of (Ga,Mn)As electronic properties|M. Elsen,H. Jaffres,R. Mattana,L. Thevenard,A. Lemaitre,J. -M. George###
(121965, 121965)
 This allows to give arough estimation of the exchange energy Deltaexch6BG<missing VAR>simeq120 meVand hole concentration p<missing VAR>simeq1.1020cm-3 of (Ga,Mn)As and beyondgives the general trend of TMR and TAMR textitvs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 6, 'x', 2]

Mn
###Spin-Polarized Tunneling as a probe of (Ga,Mn)As electronic properties|M. Elsen,H. Jaffres,R. Mattana,L. Thevenard,A. Lemaitre,J. -M. George###
(121967, 121967)
 This allows to give arough estimation of the exchange energy Deltaexch6BG<missing VAR>simeq120 meVand hole concentration p<missing VAR>simeq1.1020cm-3 of (Ga,Mn)As and beyondgives the general trend of TMR and TAMR textitvs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 6, 'x', 2]

As
###Spin-Polarized Tunneling as a probe of (Ga,Mn)As electronic properties|M. Elsen,H. Jaffres,R. Mattana,L. Thevenard,A. Lemaitre,J. -M. George###
(121969, 121969)
 This allows to give arough estimation of the exchange energy Deltaexch6BG<missing VAR>simeq120 meVand hole concentration p<missing VAR>simeq1.1020cm-3 of (Ga,Mn)As and beyondgives the general trend of TMR and TAMR textitvs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 6, 'x', 2]

RuSr2
###Transport, magnetic and superconducting properties of RuSr2RCu2O8 (R= Eu, Gd) doped with Sn|M. Pozek,I. Kupcic,A. Dulcic,A. Hamzic,D. Paar,M. Basletic,E. Tafra,G. V. M. Williams###
(122042, 122044)
Transport, magnetic and superconducting properties of RuSr2R<missing VAR>Cu2O8 (R<missing VAR> Eu, Gd) doped with Sn.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[171.0, 2, ',', 3]

Cu2O8
###Transport, magnetic and superconducting properties of RuSr2RCu2O8 (R= Eu, Gd) doped with Sn|M. Pozek,I. Kupcic,A. Dulcic,A. Hamzic,D. Paar,M. Basletic,E. Tafra,G. V. M. Williams###
(122046, 122049)
Transport, magnetic and superconducting properties of RuSr2R<missing VAR>Cu2O8 (R<missing VAR> Eu, Gd) doped with Sn.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 2, ',', 3]

Eu
###Transport, magnetic and superconducting properties of RuSr2RCu2O8 (R= Eu, Gd) doped with Sn|M. Pozek,I. Kupcic,A. Dulcic,A. Hamzic,D. Paar,M. Basletic,E. Tafra,G. V. M. Williams###
(122054, 122054)
Transport, magnetic and superconducting properties of RuSr2R<missing VAR>Cu2O8 (R<missing VAR> Eu, Gd) doped with Sn.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 2, ',', 3]

Gd
###Transport, magnetic and superconducting properties of RuSr2RCu2O8 (R= Eu, Gd) doped with Sn|M. Pozek,I. Kupcic,A. Dulcic,A. Hamzic,D. Paar,M. Basletic,E. Tafra,G. V. M. Williams###
(122057, 122057)
Transport, magnetic and superconducting properties of RuSr2R<missing VAR>Cu2O8 (R<missing VAR> Eu, Gd) doped with Sn.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 2, ',', 3]

Sn
###Transport, magnetic and superconducting properties of RuSr2RCu2O8 (R= Eu, Gd) doped with Sn|M. Pozek,I. Kupcic,A. Dulcic,A. Hamzic,D. Paar,M. Basletic,E. Tafra,G. V. M. Williams###
(122064, 122064)
Transport, magnetic and superconducting properties of RuSr2R<missing VAR>Cu2O8 (R<missing VAR> Eu, Gd) doped with Sn.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 2, ',', 3]

Ru1-xSn
###Transport, magnetic and superconducting properties of RuSr2RCu2O8 (R= Eu, Gd) doped with Sn|M. Pozek,I. Kupcic,A. Dulcic,A. Hamzic,D. Paar,M. Basletic,E. Tafra,G. V. M. Williams###
(122067, 122071)
 Ru1-xSnx<missing VAR>Sr2EuCu2O8 and Ru1-xSnx<missing VAR>Sr2GdCu2O8 have been comprehensivelystudied by microwave and dc resistivity and magnetoresistivity and by the dcHall measurements.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[144.0, 2, ',', 2]

Sr2EuCu2O8
###Transport, magnetic and superconducting properties of RuSr2RCu2O8 (R= Eu, Gd) doped with Sn|M. Pozek,I. Kupcic,A. Dulcic,A. Hamzic,D. Paar,M. Basletic,E. Tafra,G. V. M. Williams###
(122073, 122079)
 Ru1-xSnx<missing VAR>Sr2EuCu2O8 and Ru1-xSnx<missing VAR>Sr2GdCu2O8 have been comprehensivelystudied by microwave and dc resistivity and magnetoresistivity and by the dcHall measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6153846153846154,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15384615384615385,0,0,0,0,0,0,0,0,0.15384615384615385,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 2, ',', 2]

Ru1-xSn
###Transport, magnetic and superconducting properties of RuSr2RCu2O8 (R= Eu, Gd) doped with Sn|M. Pozek,I. Kupcic,A. Dulcic,A. Hamzic,D. Paar,M. Basletic,E. Tafra,G. V. M. Williams###
(122083, 122087)
 Ru1-xSnx<missing VAR>Sr2EuCu2O8 and Ru1-xSnx<missing VAR>Sr2GdCu2O8 have been comprehensivelystudied by microwave and dc resistivity and magnetoresistivity and by the dcHall measurements.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[128.0, 2, ',', 2]

Sr2GdCu2O8
###Transport, magnetic and superconducting properties of RuSr2RCu2O8 (R= Eu, Gd) doped with Sn|M. Pozek,I. Kupcic,A. Dulcic,A. Hamzic,D. Paar,M. Basletic,E. Tafra,G. V. M. Williams###
(122089, 122095)
 Ru1-xSnx<missing VAR>Sr2EuCu2O8 and Ru1-xSnx<missing VAR>Sr2GdCu2O8 have been comprehensivelystudied by microwave and dc resistivity and magnetoresistivity and by the dcHall measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6153846153846154,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15384615384615385,0,0,0,0,0,0,0,0,0.15384615384615385,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 2, ',', 2]

Sn
###Transport, magnetic and superconducting properties of RuSr2RCu2O8 (R= Eu, Gd) doped with Sn|M. Pozek,I. Kupcic,A. Dulcic,A. Hamzic,D. Paar,M. Basletic,E. Tafra,G. V. M. Williams###
(122156, 122156)
 The magnetic ordering temperature Tm is considerablyreduced with increasing Sn content.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 2, ',', 1]

Sn
###Transport, magnetic and superconducting properties of RuSr2RCu2O8 (R= Eu, Gd) doped with Sn|M. Pozek,I. Kupcic,A. Dulcic,A. Hamzic,D. Paar,M. Basletic,E. Tafra,G. V. M. Williams###
(122168, 122168)
 However, doping with Sn leads to onlyslight reduction of the superconducting critical temperature Tc accompaniedwith the increase of the upper critical field Bc<missing VAR>2, indicating an increaseddisorder in the system and a reduced scattering length of the conducting holesin CuO2 layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 2, ',', 0]

B
###Transport, magnetic and superconducting properties of RuSr2RCu2O8 (R= Eu, Gd) doped with Sn|M. Pozek,I. Kupcic,A. Dulcic,A. Hamzic,D. Paar,M. Basletic,E. Tafra,G. V. M. Williams###
(122213, 122213)
 However, doping with Sn leads to onlyslight reduction of the superconducting critical temperature Tc accompaniedwith the increase of the upper critical field Bc<missing VAR>2, indicating an increaseddisorder in the system and a reduced scattering length of the conducting holesin CuO2 layers.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 2, ',', 0]

CuO2
###Transport, magnetic and superconducting properties of RuSr2RCu2O8 (R= Eu, Gd) doped with Sn|M. Pozek,I. Kupcic,A. Dulcic,A. Hamzic,D. Paar,M. Basletic,E. Tafra,G. V. M. Williams###
(122254, 122256)
 However, doping with Sn leads to onlyslight reduction of the superconducting critical temperature Tc accompaniedwith the increase of the upper critical field Bc<missing VAR>2, indicating an increaseddisorder in the system and a reduced scattering length of the conducting holesin CuO2 layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 2, ',', 0]

In
###Transport, magnetic and superconducting properties of RuSr2RCu2O8 (R= Eu, Gd) doped with Sn|M. Pozek,I. Kupcic,A. Dulcic,A. Hamzic,D. Paar,M. Basletic,E. Tafra,G. V. M. Williams###
(122261, 122261)
 In spite of the increased scattering rate, the normal stateresistivity and the Hall resistivity are reduced with respect to the purecompound, due to the increased number of itinerant holes in CuO2 layers, whichrepresent the main conductivity channel.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 2, ',', 1]

CuO2
###Transport, magnetic and superconducting properties of RuSr2RCu2O8 (R= Eu, Gd) doped with Sn|M. Pozek,I. Kupcic,A. Dulcic,A. Hamzic,D. Paar,M. Basletic,E. Tafra,G. V. M. Williams###
(122329, 122331)
 In spite of the increased scattering rate, the normal stateresistivity and the Hall resistivity are reduced with respect to the purecompound, due to the increased number of itinerant holes in CuO2 layers, whichrepresent the main conductivity channel.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 2, ',', 1]

RuO2
###Transport, magnetic and superconducting properties of RuSr2RCu2O8 (R= Eu, Gd) doped with Sn|M. Pozek,I. Kupcic,A. Dulcic,A. Hamzic,D. Paar,M. Basletic,E. Tafra,G. V. M. Williams###
(122360, 122362)
 Most of the electrons in RuO2 layersare presumably localized, but the observed negative magnetoresistance and theextraordinary Hall effect lead to the conclusion that there exists a smallnumber of itinerant electrons in RuO2 layers that exhibit colossalmagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 2, ',', 2]

RuO2
###Transport, magnetic and superconducting properties of RuSr2RCu2O8 (R= Eu, Gd) doped with Sn|M. Pozek,I. Kupcic,A. Dulcic,A. Hamzic,D. Paar,M. Basletic,E. Tafra,G. V. M. Williams###
(122424, 122426)
 Most of the electrons in RuO2 layersare presumably localized, but the observed negative magnetoresistance and theextraordinary Hall effect lead to the conclusion that there exists a smallnumber of itinerant electrons in RuO2 layers that exhibit colossalmagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[209.0, 2, ',', 2]

GaAs
###Strong spin-orbit interactions and weak antilocalization in carbon doped p-type GaAs heterostructures|Boris Grbic,Renaud Leturcq,Thomas Ihn,Klaus Ensslin,Dirk Reuter,Andreas D. Wieck###
(122472, 122473)
Strong spin-orbit interactions and weak antilocalization in carbon doped p<missing VAR>-type GaAs heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[197.0, 30, '%', 3],[241.0, 70, 'mK', 4]

GaAs/AlGaAs
###Strong spin-orbit interactions and weak antilocalization in carbon doped p-type GaAs heterostructures|Boris Grbic,Renaud Leturcq,Thomas Ihn,Klaus Ensslin,Dirk Reuter,Andreas D. Wieck###
(122509, 122514)
 We present a comprehensive study of the low-field magnetoresistance in carbondoped p<missing VAR>-type GaAs/AlGaAs heterostructures aiming at the investigation ofspin-orbit interaction effects.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[156.0, 30, '%', 2],[200.0, 70, 'mK', 3]

LaO0.9F0.1-xFeAs
###Hall effect and magnetoresistance in the normal state of the superconductor LaO$_{0.9}$F$_{0.1-x}$FeAs|Huan Yang,Xiyu Zhu,Lei Fang,Gang Mu,Hai-Hu Wen###
(122784, 122792)
Hall effect and magnetoresistance in the normal state of the superconductor LaO0.9F0.1-xFeAs.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[123.0, 100, 'K', 4],[129.0, 9.8, 'E', 4],[133.0, -3, ',', 4],[197.0, 0, 'T', 6],[218.0, 240, 'K', 6]

LaO0.9F0.1-xFeAs
###Hall effect and magnetoresistance in the normal state of the superconductor LaO$_{0.9}$F$_{0.1-x}$FeAs|Huan Yang,Xiyu Zhu,Lei Fang,Gang Mu,Hai-Hu Wen###
(122825, 122833)
 By using a two-step method, we successfully synthesized the iron based newsuperconductor LaO0.9F0.1-xFeAs.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[82.0, 100, 'K', 3],[88.0, 9.8, 'E', 3],[92.0, -3, ',', 3],[156.0, 0, 'T', 5],[177.0, 240, 'K', 5]

H
###Hall effect and magnetoresistance in the normal state of the superconductor LaO$_{0.9}$F$_{0.1-x}$FeAs|Huan Yang,Xiyu Zhu,Lei Fang,Gang Mu,Hai-Hu Wen###
(122870, 122870)
 A negative Hallcoefficient R<missing VAR>H has been found implying a dominant conduction by electron-likecharge carriers in this material.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 100, 'K', 1],[51.0, 9.8, 'E', 1],[55.0, -3, ',', 1],[119.0, 0, 'T', 3],[140.0, 240, 'K', 3]

LaFeAsO0.9F0.1
###Upper critical field, Hall effect and magnetoresistance in the iron-based layered superconductor LaFeAsO_{0.9}F_{0.1-δ}|Xiyu Zhu,Huan Yang,Lei Fang,Gang Mu,Hai-Hu Wen###
(123080, 123086)
Upper critical field, Hall effect and magnetoresistance in the iron-based layered superconductor LaFeAsO0.9F0.1-.
Featurization terminated normally.
0,0,0,0,0,0,0,0.225,0.025,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 50, 'Tesla', 3],[219.0, 100, 'K', 6],[224.0, 9.8, 'E', 6],[227.0, -3, ',', 6],[312.0, 230, 'K', 8]

LaFeAsO0.9F0.1
###Upper critical field, Hall effect and magnetoresistance in the iron-based layered superconductor LaFeAsO_{0.9}F_{0.1-δ}|Xiyu Zhu,Huan Yang,Lei Fang,Gang Mu,Hai-Hu Wen###
(123120, 123126)
 By using a two-step method, we successfully synthesized the iron based newsuperconductor LaFeAsO0.9F0.1-delta.
Featurization terminated normally.
0,0,0,0,0,0,0,0.225,0.025,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 50, 'Tesla', 2],[179.0, 100, 'K', 5],[184.0, 9.8, 'E', 5],[187.0, -3, ',', 5],[272.0, 230, 'K', 7]

In
###Upper critical field, Hall effect and magnetoresistance in the iron-based layered superconductor LaFeAsO_{0.9}F_{0.1-δ}|Xiyu Zhu,Huan Yang,Lei Fang,Gang Mu,Hai-Hu Wen###
(123217, 123217)
 In addition, theHall effect and magnetoresistance were measured in wide temperature region.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 50, 'Tesla', 1],[88.0, 100, 'K', 2],[93.0, 9.8, 'E', 2],[96.0, -3, ',', 2],[181.0, 230, 'K', 4]

H
###Upper critical field, Hall effect and magnetoresistance in the iron-based layered superconductor LaFeAsO_{0.9}F_{0.1-δ}|Xiyu Zhu,Huan Yang,Lei Fang,Gang Mu,Hai-Hu Wen###
(123256, 123256)
 Anegative Hall coefficient R<missing VAR>H has been found, implying a dominant conductionmainly by electron-like charge carriers in this material.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 50, 'Tesla', 2],[49.0, 100, 'K', 1],[54.0, 9.8, 'E', 1],[57.0, -3, ',', 1],[142.0, 230, 'K', 3]

In
###Effect of frequency and temperature on microwave-induced magnetoresistance oscillations in two-dimensional electron systems|Jesus Inarrea###
(123561, 123561)
 In this work we show thatthis experimental behavior can be addressed on the same theoretical basis.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.67Ba0.33MnO3
###Unusual field dependence of radio frequency magnetoimpedance in La0.67Ba0.33MnO3|A. Rebello,R. Mahendiran###
(123741, 123747)
Unusual field dependence of radio frequency magnetoimpedance in La0.67Ba0.33MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.066,0.134,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 30, 'MHz', 1],[80.0, 15, 'MHz', 2],[97.0, 100, 'mT', 2],[110.0, 2, 'MHz', 2],[196.0, 30, 'MHz', 4]

La0.67Ba0.33MnO3
###Unusual field dependence of radio frequency magnetoimpedance in La0.67Ba0.33MnO3|A. Rebello,R. Mahendiran###
(123779, 123785)
 We have investigated magnetic field dependence of the ac magnetoresitance andthe magnetoreactance in La0.67Ba0.33MnO3 over a wide frequency range from f<missing VAR>  0to 30 MHz.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.066,0.134,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 30, 'MHz', 0],[42.0, 15, 'MHz', 1],[59.0, 100, 'mT', 1],[72.0, 2, 'MHz', 1],[158.0, 30, 'MHz', 3]

H
###Unusual field dependence of radio frequency magnetoimpedance in La0.67Ba0.33MnO3|A. Rebello,R. Mahendiran###
(123842, 123842)
 A huge ac magnetoresistance of 55 % at f<missing VAR>  15 MHz in a smallmagnetic field of H  100 mT and magnetoreactance of 80 % at 2 MHz arereported.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 30, 'MHz', 1],[15.0, 15, 'MHz', 0],[2.0, 100, 'mT', 0],[15.0, 2, 'MHz', 0],[101.0, 30, 'MHz', 2]

W
###Negative and Positive Magnetoresistance in Bilayer Graphene: Effects of Weak Localization and Charge Inhomogeneity|Yung-Fu Chen,Myung-Ho Bae,Cesar Chialvo,Travis Dirks,Alexey Bezryadin,Nadya Mason###
(124494, 124494)
 We examine multiplecontributions to the magnetoresistance, including those of weak localization(WL), universal conductance fluctuations (UCF), and inhomogeneous chargetransport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 0.25, 'K', 1],[75.0, 4.3, 'K', 1]

(UCF)
###Negative and Positive Magnetoresistance in Bilayer Graphene: Effects of Weak Localization and Charge Inhomogeneity|Yung-Fu Chen,Myung-Ho Bae,Cesar Chialvo,Travis Dirks,Alexey Bezryadin,Nadya Mason###
(124505, 124509)
 We examine multiplecontributions to the magnetoresistance, including those of weak localization(WL), universal conductance fluctuations (UCF), and inhomogeneous chargetransport.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[57.0, 0.25, 'K', 1],[60.0, 4.3, 'K', 1]

W
###Negative and Positive Magnetoresistance in Bilayer Graphene: Effects of Weak Localization and Charge Inhomogeneity|Yung-Fu Chen,Myung-Ho Bae,Cesar Chialvo,Travis Dirks,Alexey Bezryadin,Nadya Mason###
(124526, 124526)
 A clear WL<missing VAR> signal is evident at all measured gate voltages (in thehole doped regime) and temperature ranges (from 0.25 K to 4.3 K), and the phasecoherence length extracted from WL<missing VAR> data does not saturate at low temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 0.25, 'K', 0],[43.0, 4.3, 'K', 0]

W
###Negative and Positive Magnetoresistance in Bilayer Graphene: Effects of Weak Localization and Charge Inhomogeneity|Yung-Fu Chen,Myung-Ho Bae,Cesar Chialvo,Travis Dirks,Alexey Bezryadin,Nadya Mason###
(124588, 124588)
 A clear WL<missing VAR> signal is evident at all measured gate voltages (in thehole doped regime) and temperature ranges (from 0.25 K to 4.3 K), and the phasecoherence length extracted from WL<missing VAR> data does not saturate at low temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 0.25, 'K', 0],[19.0, 4.3, 'K', 0]

W
###Negative and Positive Magnetoresistance in Bilayer Graphene: Effects of Weak Localization and Charge Inhomogeneity|Yung-Fu Chen,Myung-Ho Bae,Cesar Chialvo,Travis Dirks,Alexey Bezryadin,Nadya Mason###
(124609, 124609)
The WL<missing VAR> data is fit to demonstrate that electron-electron Nyquist scattering isthe major source of phase decoherence.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 0.25, 'K', 1],[40.0, 4.3, 'K', 1]

UCF
###Negative and Positive Magnetoresistance in Bilayer Graphene: Effects of Weak Localization and Charge Inhomogeneity|Yung-Fu Chen,Myung-Ho Bae,Cesar Chialvo,Travis Dirks,Alexey Bezryadin,Nadya Mason###
(124654, 124656)
 A decrease in UCF amplitude withincreasing gate voltage and temperature is shown to be consistent with acorresponding decrease in the phase coherence length.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[88.0, 0.25, 'K', 2],[85.0, 4.3, 'K', 2]

In
###Negative and Positive Magnetoresistance in Bilayer Graphene: Effects of Weak Localization and Charge Inhomogeneity|Yung-Fu Chen,Myung-Ho Bae,Cesar Chialvo,Travis Dirks,Alexey Bezryadin,Nadya Mason###
(124703, 124703)
 In addition, a weakpositive magnetoresistance at higher magnetic fields is observed, andattributed to inhomogeneous charge transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 0.25, 'K', 3],[134.0, 4.3, 'K', 3]

GaAs
###Colossal magnetoresistance in an ultra-clean weakly interacting 2D Fermi liquid|Xiaoqing Zhou,B. A. Piot,M. Bonin,L. W. Engel,S. Das Sarma,G. Gervais,L. N. Pfeiffer,K. W. West###
(124804, 124805)
 We report the observation of a new phenomenon of colossal magnetoresistancein a 40 nm wide GaAs quantum well in the presence of an external magnetic fieldapplied parallel to the high-mobility 2D electron layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 2, 'D', 1],[4.0, 40, 'nm', 0],[34.0, 2, 'D', 0],[81.0, 45, 'T', 1],[197.0, 2, 'D', 3]

In
###Colossal magnetoresistance in an ultra-clean weakly interacting 2D Fermi liquid|Xiaoqing Zhou,B. A. Piot,M. Bonin,L. W. Engel,S. Das Sarma,G. Gervais,L. N. Pfeiffer,K. W. West###
(124846, 124846)
 In a strong magneticfield, the magnetoresistance is observed to increase by a factor of 300 from 0to 45T without the system undergoing any metal-insulator transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 2, 'D', 2],[46.0, 40, 'nm', 1],[7.0, 2, 'D', 1],[40.0, 45, 'T', 0],[156.0, 2, 'D', 2]

Co
###Tunnel magnetoresistance in alumina, magnesia and composite tunnel barrier magnetic tunnel junctions|Oliver Schebaum,Volker Drewello,Alexander Auge,Günter Reiss,Markus Münzenberg,Henning Schuhmann,Michael Seibt,Andy Thomas###
(125070, 125070)
 Using magnetron sputtering, we have prepared Co-Fe-B/tunnel barrier/Co-Fe-Bmagnetic tunnel junctions with tunnel barriers consisting of alumina, magnesia,and magnesia-alumina bilayer systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 73, '%', 1],[77.0, 323, '%', 1],[157.0, 65, '%', 3],[166.0, 173, '%', 3],[176.0, 78, '%', 3]

Fe
###Tunnel magnetoresistance in alumina, magnesia and composite tunnel barrier magnetic tunnel junctions|Oliver Schebaum,Volker Drewello,Alexander Auge,Günter Reiss,Markus Münzenberg,Henning Schuhmann,Michael Seibt,Andy Thomas###
(125072, 125072)
 Using magnetron sputtering, we have prepared Co-Fe-B/tunnel barrier/Co-Fe-Bmagnetic tunnel junctions with tunnel barriers consisting of alumina, magnesia,and magnesia-alumina bilayer systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 73, '%', 1],[75.0, 323, '%', 1],[155.0, 65, '%', 3],[164.0, 173, '%', 3],[174.0, 78, '%', 3]

B
###Tunnel magnetoresistance in alumina, magnesia and composite tunnel barrier magnetic tunnel junctions|Oliver Schebaum,Volker Drewello,Alexander Auge,Günter Reiss,Markus Münzenberg,Henning Schuhmann,Michael Seibt,Andy Thomas###
(125074, 125074)
 Using magnetron sputtering, we have prepared Co-Fe-B/tunnel barrier/Co-Fe-Bmagnetic tunnel junctions with tunnel barriers consisting of alumina, magnesia,and magnesia-alumina bilayer systems.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 73, '%', 1],[73.0, 323, '%', 1],[153.0, 65, '%', 3],[162.0, 173, '%', 3],[172.0, 78, '%', 3]

Co
###Tunnel magnetoresistance in alumina, magnesia and composite tunnel barrier magnetic tunnel junctions|Oliver Schebaum,Volker Drewello,Alexander Auge,Günter Reiss,Markus Münzenberg,Henning Schuhmann,Michael Seibt,Andy Thomas###
(125080, 125080)
 Using magnetron sputtering, we have prepared Co-Fe-B/tunnel barrier/Co-Fe-Bmagnetic tunnel junctions with tunnel barriers consisting of alumina, magnesia,and magnesia-alumina bilayer systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 73, '%', 1],[67.0, 323, '%', 1],[147.0, 65, '%', 3],[156.0, 173, '%', 3],[166.0, 78, '%', 3]

Fe
###Tunnel magnetoresistance in alumina, magnesia and composite tunnel barrier magnetic tunnel junctions|Oliver Schebaum,Volker Drewello,Alexander Auge,Günter Reiss,Markus Münzenberg,Henning Schuhmann,Michael Seibt,Andy Thomas###
(125082, 125082)
 Using magnetron sputtering, we have prepared Co-Fe-B/tunnel barrier/Co-Fe-Bmagnetic tunnel junctions with tunnel barriers consisting of alumina, magnesia,and magnesia-alumina bilayer systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 73, '%', 1],[65.0, 323, '%', 1],[145.0, 65, '%', 3],[154.0, 173, '%', 3],[164.0, 78, '%', 3]

B
###Tunnel magnetoresistance in alumina, magnesia and composite tunnel barrier magnetic tunnel junctions|Oliver Schebaum,Volker Drewello,Alexander Auge,Günter Reiss,Markus Münzenberg,Henning Schuhmann,Michael Seibt,Andy Thomas###
(125084, 125084)
 Using magnetron sputtering, we have prepared Co-Fe-B/tunnel barrier/Co-Fe-Bmagnetic tunnel junctions with tunnel barriers consisting of alumina, magnesia,and magnesia-alumina bilayer systems.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 73, '%', 1],[63.0, 323, '%', 1],[143.0, 65, '%', 3],[152.0, 173, '%', 3],[162.0, 78, '%', 3]

In
###Tunnel magnetoresistance in alumina, magnesia and composite tunnel barrier magnetic tunnel junctions|Oliver Schebaum,Volker Drewello,Alexander Auge,Günter Reiss,Markus Münzenberg,Henning Schuhmann,Michael Seibt,Andy Thomas###
(125195, 125195)
 In these systems, the tunnelmagnetoresistance ratios at optimum annealing temperatures were found to be 65%for alumina, 173% for magnesia, and 78% for the composite tunnel barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 73, '%', 2],[48.0, 323, '%', 2],[32.0, 65, '%', 0],[41.0, 173, '%', 0],[51.0, 78, '%', 0]

PrCeCuO
###On the resistivity at low temperatures in electron-doped cuprate superconductors|S. Finkelman,M. Sachs,J. Paglione,G. Droulers,P. Bach,R. L. Greene,Y. Dagan###
(125389, 125392)
 We measured the magnetoresistance as a function of temperature down to 20mKand magnetic field for a set of underdoped PrCeCuO (x<missing VAR>0.12) thin films withcontrolled oxygen content.
Featurization terminated normally.
0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 20, 'mK', 0]

CeFeAsO
###The magnetoresistance and Hall effect in CeFeAsO: a high magnetic field study|H. Q. Yuan,L. Jiao,J. Singleton,F. F. Balakirev,G. F. Chen,J. L. Luo,N. L. Wang###
(125701, 125704)
The magnetoresistance and Hall effect in CeFeAsO a high magnetic field study.
Featurization terminated normally.
0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 45, 'T', 1],[137.0, 150, 'K', 2]

CeFeAsO
###The magnetoresistance and Hall effect in CeFeAsO: a high magnetic field study|H. Q. Yuan,L. Jiao,J. Singleton,F. F. Balakirev,G. F. Chen,J. L. Luo,N. L. Wang###
(125738, 125741)
 The longitudinal electrical resistivity and the transverse Hall resistivityof CeFeAsO are simultaneously measured up to a magnetic field of 45T using thefacilities of pulsed magnetic field at Los Alamos.
Featurization terminated normally.
0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 45, 'T', 0],[100.0, 150, 'K', 1]

H
###The magnetoresistance and Hall effect in CeFeAsO: a high magnetic field study|H. Q. Yuan,L. Jiao,J. Singleton,F. F. Balakirev,G. F. Chen,J. L. Luo,N. L. Wang###
(125805, 125805)
 Distinct behaviour isobserved in both the magnetoresistance Rxx(mu0H) and the Hall resistanceRxy(mu0H) while crossing the structural phase transition at Ts approx 150K.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 45, 'T', 1],[36.0, 150, 'K', 0]

H
###The magnetoresistance and Hall effect in CeFeAsO: a high magnetic field study|H. Q. Yuan,L. Jiao,J. Singleton,F. F. Balakirev,G. F. Chen,J. L. Luo,N. L. Wang###
(125821, 125821)
 Distinct behaviour isobserved in both the magnetoresistance Rxx(mu0H) and the Hall resistanceRxy(mu0H) while crossing the structural phase transition at Ts approx 150K.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 45, 'T', 1],[20.0, 150, 'K', 0]

At
###The magnetoresistance and Hall effect in CeFeAsO: a high magnetic field study|H. Q. Yuan,L. Jiao,J. Singleton,F. F. Balakirev,G. F. Chen,J. L. Luo,N. L. Wang###
(125845, 125845)
At temperatures above Ts, little magnetoresistance is observed and the Hallresistivity follows linear field dependence.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 45, 'T', 2],[4.0, 150, 'K', 1]

CeFeAsO
###The magnetoresistance and Hall effect in CeFeAsO: a high magnetic field study|H. Q. Yuan,L. Jiao,J. Singleton,F. F. Balakirev,G. F. Chen,J. L. Luo,N. L. Wang###
(125974, 125977)
 We argue that themagnetic state in CeFeAsO is unlikely a conventional type of spin-density-wave(SD<missing VAR>W).
Featurization terminated normally.
0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[214.0, 45, 'T', 5],[133.0, 150, 'K', 4]

S
###The magnetoresistance and Hall effect in CeFeAsO: a high magnetic field study|H. Q. Yuan,L. Jiao,J. Singleton,F. F. Balakirev,G. F. Chen,J. L. Luo,N. L. Wang###
(125999, 125999)
 We argue that themagnetic state in CeFeAsO is unlikely a conventional type of spin-density-wave(SD<missing VAR>W).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[239.0, 45, 'T', 5],[158.0, 150, 'K', 4]

W
###The magnetoresistance and Hall effect in CeFeAsO: a high magnetic field study|H. Q. Yuan,L. Jiao,J. Singleton,F. F. Balakirev,G. F. Chen,J. L. Luo,N. L. Wang###
(126001, 126001)
 We argue that themagnetic state in CeFeAsO is unlikely a conventional type of spin-density-wave(SD<missing VAR>W).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[241.0, 45, 'T', 5],[160.0, 150, 'K', 4]

La2CoMnO6
###Magnetodielectric behavior in La2CoMnO6 nanoparticles|J. Krishna Murthy,A. Venimadhav###
(126019, 126024)
Magnetodielectric behavior in La2CoMnO6 nanoparticles.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 218, 'K', 2],[64.0, 135, 'K', 2],[136.0, 10, '%', 3],[141.0, 8, '%', 3],[157.0, 100, 'kHz', 3],[160.0, 5, 'T', 3]

La2CoMnO6
###Magnetodielectric behavior in La2CoMnO6 nanoparticles|J. Krishna Murthy,A. Venimadhav###
(126049, 126054)
 We have investigated magnetic, dielectric and magnetodielectric properties ofLa2CoMnO6 nanoparticles prepared by sol-gel method.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 218, 'K', 1],[34.0, 135, 'K', 1],[106.0, 10, '%', 2],[111.0, 8, '%', 2],[127.0, 100, 'kHz', 2],[130.0, 5, 'T', 2]

La2CoMnO6
###Magnetodielectric behavior in La2CoMnO6 nanoparticles|J. Krishna Murthy,A. Venimadhav###
(126115, 126120)
 Magnetization measurementsrevealed two distinct ferromagnetic transitions at 218 K and 135 K that can beassigned to ordered and disordered magnetic phases of the La2CoMnO6nanoparticles.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 218, 'K', 0],[27.0, 135, 'K', 0],[40.0, 10, '%', 1],[45.0, 8, '%', 1],[61.0, 100, 'kHz', 1],[64.0, 5, 'T', 1]

GaAs/AlGaAs
###Giant negative magnetoresistance in high-mobility 2D electron systems|A. T. Hatke,M. A. Zudov,J. L. Reno,L. N. Pfeiffer,K. W. West###
(126368, 126373)
 We report on a giant negative magnetoresistance in very high mobilityGaAs/AlGaAs heterostructures and quantum wells.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[30.0, 2, 'D', 1]

B
###Giant negative magnetoresistance in high-mobility 2D electron systems|A. T. Hatke,M. A. Zudov,J. L. Reno,L. N. Pfeiffer,K. W. West###
(126397, 126397)
 The effect is the strongest atB simeq 1 kG, where the magnetoresistivity develops a minimum emerging at T<missing VAR>lesssim 2 K.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 2, 'D', 2]

K
###Giant negative magnetoresistance in high-mobility 2D electron systems|A. T. Hatke,M. A. Zudov,J. L. Reno,L. N. Pfeiffer,K. W. West###
(126430, 126430)
 The effect is the strongest atB simeq 1 kG, where the magnetoresistivity develops a minimum emerging at T<missing VAR>lesssim 2 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 2, 'D', 2]

K
###Giant negative magnetoresistance in high-mobility 2D electron systems|A. T. Hatke,M. A. Zudov,J. L. Reno,L. N. Pfeiffer,K. W. West###
(126457, 126457)
 Unlike the zero-field resistivity which saturates at T<missing VAR> simeq 2 K, the resistivity at this minimum continues to drop at an accelerated rateto much lower temperatures and becomes several times smaller than thezero-field resistivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 2, 'D', 3]

CaMnBi2
###Two dimensional Dirac fermions and quantum magnetoresistance in CaMnBi$_2$|Kefeng Wang D. Graf,Limin Wang,Hechang Lei,S. W. Tozer,C. Petrovic###
(126630, 126633)
Two dimensional Dirac fermions and quantum magnetoresistance in CaMnBi2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 120, '%', 3],[156.0, 9, 'T', 3],[159.0, 2, 'K', 3]

CaMnBi2
###Two dimensional Dirac fermions and quantum magnetoresistance in CaMnBi$_2$|Kefeng Wang D. Graf,Limin Wang,Hechang Lei,S. W. Tozer,C. Petrovic###
(126663, 126666)
 We report two dimensional Dirac fermions and quantum magnetoresistance insingle crystals of CaMnBi2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 120, '%', 2],[123.0, 9, 'T', 2],[126.0, 2, 'K', 2]

Bi
###Two dimensional Dirac fermions and quantum magnetoresistance in CaMnBi$_2$|Kefeng Wang D. Graf,Limin Wang,Hechang Lei,S. W. Tozer,C. Petrovic###
(126719, 126719)
 The non-zero Berrys<missing VAR> phase, small cyclotronresonant mass and first-principle band structure suggest the existence of theDirac fermions in the Bi square nets.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 120, '%', 1],[70.0, 9, 'T', 1],[73.0, 2, 'K', 1]

B
###Two dimensional Dirac fermions and quantum magnetoresistance in CaMnBi$_2$|Kefeng Wang D. Graf,Limin Wang,Hechang Lei,S. W. Tozer,C. Petrovic###
(126751, 126751)
 The in-plane transverse magnetoresistanceexhibits a crossover at a critical field B from semiclassical weak-fieldB2 dependence to the high-field unsaturated linear magnetoresistance (sim120% in 9 T at 2 K) due to the quantum limit of the Dirac fermions.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 120, '%', 0],[38.0, 9, 'T', 0],[41.0, 2, 'K', 0]

B2
###Two dimensional Dirac fermions and quantum magnetoresistance in CaMnBi$_2$|Kefeng Wang D. Graf,Limin Wang,Hechang Lei,S. W. Tozer,C. Petrovic###
(126762, 126763)
 The in-plane transverse magnetoresistanceexhibits a crossover at a critical field B from semiclassical weak-fieldB2 dependence to the high-field unsaturated linear magnetoresistance (sim120% in 9 T at 2 K) due to the quantum limit of the Dirac fermions.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 120, '%', 0],[26.0, 9, 'T', 0],[29.0, 2, 'K', 0]

B
###Two dimensional Dirac fermions and quantum magnetoresistance in CaMnBi$_2$|Kefeng Wang D. Graf,Limin Wang,Hechang Lei,S. W. Tozer,C. Petrovic###
(126823, 126823)
 Thetemperature dependence of B satisfies quadratic behavior, which isattributed to the splitting of linear energy dispersion in high field.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 120, '%', 1],[34.0, 9, 'T', 1],[31.0, 2, 'K', 1]

CaMnBi2
###Two dimensional Dirac fermions and quantum magnetoresistance in CaMnBi$_2$|Kefeng Wang D. Graf,Limin Wang,Hechang Lei,S. W. Tozer,C. Petrovic###
(126884, 126887)
 Ourresults demonstrate the existence of two dimensional Dirac fermions inCaMnBi2 with Bi square nets.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 120, '%', 2],[95.0, 9, 'T', 2],[92.0, 2, 'K', 2]

Bi
###Two dimensional Dirac fermions and quantum magnetoresistance in CaMnBi$_2$|Kefeng Wang D. Graf,Limin Wang,Hechang Lei,S. W. Tozer,C. Petrovic###
(126891, 126891)
 Ourresults demonstrate the existence of two dimensional Dirac fermions inCaMnBi2 with Bi square nets.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 120, '%', 2],[102.0, 9, 'T', 2],[99.0, 2, 'K', 2]

Gd5Ge3
###Anomalous magnetic, transport and thermal properties of Gd5Ge3|Bibekananda Maji,K. G. Suresh,A. K. Nigam###
(126921, 126924)
Anomalous magnetic, transport and thermal properties of Gd5Ge3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.375,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.625,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 90, 'kOe', 2]

Gd5Ge3
###Anomalous magnetic, transport and thermal properties of Gd5Ge3|Bibekananda Maji,K. G. Suresh,A. K. Nigam###
(126951, 126954)
 We have studied the magnetic, thermal and magnetotransport properties ofpolycrystalline Gd5Ge3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.375,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.625,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 90, 'kOe', 1]

Bi
###Magnetotransport and induced superconductivity in Bi based three-dimensional topological insulators|M. Veldhorst,M. Snelder,M. Hoek,C. G. Molenaar,D. P. Leusink,A. A. Golubov,H. Hilgenkamp,A. Brinkman###
(127229, 127229)
Magnetotransport and induced superconductivity in Bi based three-dimensional topological insulators.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 3, 'D', 1],[101.0, 3, 'D', 2]

Bi
###Magnetotransport and induced superconductivity in Bi based three-dimensional topological insulators|M. Veldhorst,M. Snelder,M. Hoek,C. G. Molenaar,D. P. Leusink,A. A. Golubov,H. Hilgenkamp,A. Brinkman###
(127327, 127327)
 It is theaim of this paper to review and analyze experimental observations with respectto the magnetotransport in Bi-based 3D topological insulators, as well as thesuperconducting transport properties of hybrid structures consisting ofsuperconductors and these topological insulators.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 3, 'D', 1],[3.0, 3, 'D', 0]

B
###Longitudinal interlayer magnetoresistance in quasi-2D metals|P. D. Grigoriev###
(127604, 127604)
 The longitudinal interlayer magnetoresistance R<missing VAR>zz(Bz) is calculatedin strongly anisotropic layered metals, when the interlayer band width 4tzis less than the Landau level separation hbar omegac<missing VAR>.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 3, 'D', 1]

B
###Longitudinal interlayer magnetoresistance in quasi-2D metals|P. D. Grigoriev###
(127708, 127708)
 The impurityscattering has much stronger effect in this regime than in 3D metals and leadsto a linear longitudinal interlayer magnetoresistance R<missing VAR>zzpropto Bz<missing VAR> inthe interval hbar omegac<missing VAR>>4tz>>sqrtGamma0hbar omegac<missing VAR>changing to a square-root dependence R<missing VAR>zzpropto Bz<missing VAR>1/2 at higherfield or smaller tz.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 3, 'D', 0]

B
###Longitudinal interlayer magnetoresistance in quasi-2D metals|P. D. Grigoriev###
(127753, 127753)
 The impurityscattering has much stronger effect in this regime than in 3D metals and leadsto a linear longitudinal interlayer magnetoresistance R<missing VAR>zzpropto Bz<missing VAR> inthe interval hbar omegac<missing VAR>>4tz>>sqrtGamma0hbar omegac<missing VAR>changing to a square-root dependence R<missing VAR>zzpropto Bz<missing VAR>1/2 at higherfield or smaller tz.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 3, 'D', 0]

La1.2Sr1.8Mn2O7
###Temperature and Field Dependence of Magnetic Domains in La$_{1.2}$Sr$_{1.8}$Mn$_2$O$_7$|B. Bryant,Y. Moritomo,Y. Tokura,G. Aeppli###
(127907, 127914)
Temperature and Field Dependence of Magnetic Domains in La1.2Sr1.8Mn2O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.09999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La1.2Sr1.8Mn2O7
###Temperature and Field Dependence of Magnetic Domains in La$_{1.2}$Sr$_{1.8}$Mn$_2$O$_7$|B. Bryant,Y. Moritomo,Y. Tokura,G. Aeppli###
(128040, 128047)
 Here we show, using cryogenic Magnetic ForceMicroscopy, domain structures for the layered manganiteLa1.2Sr1.8Mn2O7 as a function of temperature and magneticfield.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.09999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Temperature and Field Dependence of Magnetic Domains in La$_{1.2}$Sr$_{1.8}$Mn$_2$O$_7$|B. Bryant,Y. Moritomo,Y. Tokura,G. Aeppli###
(128086, 128086)
 Domain walls are suppressed close to the Curie temperature T<missing VAR>C, andappear either via the application of a c<missing VAR>-axis magnetic field, or by decreasingthe temperature further.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Temperature and Field Dependence of Magnetic Domains in La$_{1.2}$Sr$_{1.8}$Mn$_2$O$_7$|B. Bryant,Y. Moritomo,Y. Tokura,G. Aeppli###
(128129, 128129)
 At temperatures well below T<missing VAR>C, new domain walls,stable at zero field, can be formed by the application of a c<missing VAR>-axis field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Temperature and Field Dependence of Magnetic Domains in La$_{1.2}$Sr$_{1.8}$Mn$_2$O$_7$|B. Bryant,Y. Moritomo,Y. Tokura,G. Aeppli###
(128138, 128138)
 At temperatures well below T<missing VAR>C, new domain walls,stable at zero field, can be formed by the application of a c<missing VAR>-axis field.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Temperature and Field Dependence of Magnetic Domains in La$_{1.2}$Sr$_{1.8}$Mn$_2$O$_7$|B. Bryant,Y. Moritomo,Y. Tokura,G. Aeppli###
(128199, 128199)
Magnetic structures are seen also at temperatures above T<missing VAR>C these featuresare attributed to inclusions of additional Ruddleston-Popper manganite phases.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Giant magnetoresistance and spin Seebeck coefficient in zigzag a-graphyne nanoribbons|M. X. Zhai,X. F. Wang,P. Vasilopoulos,Y. S. Liu,Y. J. Dong,L. Zhou,Y. J. Jiang,W. L. You###
(128312, 128312)
 We investigate the spin-dependent electric and thermoelectric properties offerromagnetic zigzag-graphyne nanoribbons (ZGNRs) using the density-functionaltheory combined with the non-equilibrium Greens<missing VAR> function method.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 10, 'e', 1]

N
###Giant magnetoresistance and spin Seebeck coefficient in zigzag a-graphyne nanoribbons|M. X. Zhai,X. F. Wang,P. Vasilopoulos,Y. S. Liu,Y. J. Dong,L. Zhou,Y. J. Jiang,W. L. You###
(128368, 128368)
 A giantmagnetoresistance is obtained in the pristine even-width ZGNRs and can be ashigh as 10e6 %.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 10, 'e', 0]

N
###Giant magnetoresistance and spin Seebeck coefficient in zigzag a-graphyne nanoribbons|M. X. Zhai,X. F. Wang,P. Vasilopoulos,Y. S. Liu,Y. J. Dong,L. Zhou,Y. J. Jiang,W. L. You###
(128424, 128424)
 However, for the doped systems, a large magnetoresistancebehavior may appear in the odd-width ZGNRs rather than the even-width ones.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 10, 'e', 1]

N
###Giant magnetoresistance and spin Seebeck coefficient in zigzag a-graphyne nanoribbons|M. X. Zhai,X. F. Wang,P. Vasilopoulos,Y. S. Liu,Y. J. Dong,L. Zhou,Y. J. Jiang,W. L. You###
(128480, 128480)
This suggests that the magnetoresistance can be manipulated in a wide range bythe dopants on edges of ZGNRs.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 10, 'e', 2]

B
###Giant magnetoresistance and spin Seebeck coefficient in zigzag a-graphyne nanoribbons|M. X. Zhai,X. F. Wang,P. Vasilopoulos,Y. S. Liu,Y. J. Dong,L. Zhou,Y. J. Jiang,W. L. You###
(128498, 128498)
 Another interesting phenomenon is that in the B-and N-doped even-width ZGNRs the spin Seebeck coefficient is always larger thanthe charge Seebeck coefficient, and a pure-spin-current thermospin device canbe achieved at specific temperatures.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 10, 'e', 3]

N
###Giant magnetoresistance and spin Seebeck coefficient in zigzag a-graphyne nanoribbons|M. X. Zhai,X. F. Wang,P. Vasilopoulos,Y. S. Liu,Y. J. Dong,L. Zhou,Y. J. Jiang,W. L. You###
(128504, 128504)
 Another interesting phenomenon is that in the B-and N-doped even-width ZGNRs the spin Seebeck coefficient is always larger thanthe charge Seebeck coefficient, and a pure-spin-current thermospin device canbe achieved at specific temperatures.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 10, 'e', 3]

N
###Giant magnetoresistance and spin Seebeck coefficient in zigzag a-graphyne nanoribbons|M. X. Zhai,X. F. Wang,P. Vasilopoulos,Y. S. Liu,Y. J. Dong,L. Zhou,Y. J. Jiang,W. L. You###
(128514, 128514)
 Another interesting phenomenon is that in the B-and N-doped even-width ZGNRs the spin Seebeck coefficient is always larger thanthe charge Seebeck coefficient, and a pure-spin-current thermospin device canbe achieved at specific temperatures.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 10, 'e', 3]

La0.4Sr0.6MnO3
###Strain driven anisotropic magnetoresistance in antiferromagnetic La$_{0.4}$Sr$_{0.6}$MnO$_{3}$|A. T. Wong,C. Beekman,H. Guo,W. Siemons,Z. Gai,E. Arenholz,Y. Takamura,T. Z. Ward###
(128591, 128597)
Strain driven anisotropic magnetoresistance in antiferromagnetic La0.4Sr0.6MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.12,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 8, '%', 2],[115.0, 63, '%', 3]

F
###Strain driven anisotropic magnetoresistance in antiferromagnetic La$_{0.4}$Sr$_{0.6}$MnO$_{3}$|A. T. Wong,C. Beekman,H. Guo,W. Siemons,Z. Gai,E. Arenholz,Y. Takamura,T. Z. Ward###
(128618, 128618)
 We investigate the effects of strain on antiferromagntic (AFM) single crystalthin films of La1-xSrx<missing VAR>MnO3 (x<missing VAR>  0.6).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 8, '%', 1],[94.0, 63, '%', 2]

La1-xSr
###Strain driven anisotropic magnetoresistance in antiferromagnetic La$_{0.4}$Sr$_{0.6}$MnO$_{3}$|A. T. Wong,C. Beekman,H. Guo,W. Siemons,Z. Gai,E. Arenholz,Y. Takamura,T. Z. Ward###
(128633, 128637)
 We investigate the effects of strain on antiferromagntic (AFM) single crystalthin films of La1-xSrx<missing VAR>MnO3 (x<missing VAR>  0.6).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[46.0, 8, '%', 1],[75.0, 63, '%', 2]

MnO3
###Strain driven anisotropic magnetoresistance in antiferromagnetic La$_{0.4}$Sr$_{0.6}$MnO$_{3}$|A. T. Wong,C. Beekman,H. Guo,W. Siemons,Z. Gai,E. Arenholz,Y. Takamura,T. Z. Ward###
(128639, 128641)
 We investigate the effects of strain on antiferromagntic (AFM) single crystalthin films of La1-xSrx<missing VAR>MnO3 (x<missing VAR>  0.6).
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 8, '%', 1],[71.0, 63, '%', 2]

In
###Strain driven anisotropic magnetoresistance in antiferromagnetic La$_{0.4}$Sr$_{0.6}$MnO$_{3}$|A. T. Wong,C. Beekman,H. Guo,W. Siemons,Z. Gai,E. Arenholz,Y. Takamura,T. Z. Ward###
(128756, 128756)
 In all threecases, we find evidence of magnetic ordering and no indication of a globalferromagnetic phase transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 8, '%', 3],[44.0, 63, '%', 2]

F
###Strain driven anisotropic magnetoresistance in antiferromagnetic La$_{0.4}$Sr$_{0.6}$MnO$_{3}$|A. T. Wong,C. Beekman,H. Guo,W. Siemons,Z. Gai,E. Arenholz,Y. Takamura,T. Z. Ward###
(128844, 128844)
 Our findings suggest that different AFM<missing VAR> ordering types have a profoundimpact on the AMR magnitude and character.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 8, '%', 5],[132.0, 63, '%', 4]

YbAlB4
###Anisotropic transverse magnetoresistivity in alpha-YbAlB4|Yosuke Matsumoto,Jinpyo Hong,Kentaro Kuga,Satoru Nakatsuji###
(128893, 128896)
Anisotropic transverse magnetoresistivity in alpha-YbAlB4.
Featurization terminated normally.
0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 1, 'T', 4],[172.0, 3, 'T', 5]

YbAlB4
###Anisotropic transverse magnetoresistivity in alpha-YbAlB4|Yosuke Matsumoto,Jinpyo Hong,Kentaro Kuga,Satoru Nakatsuji###
(128922, 128925)
 We measured the transverse magnetoresistivity of the mixed valence compoundalpha-YbAlB4.
Featurization terminated normally.
0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 1, 'T', 3],[143.0, 3, 'T', 4]

In
###Anisotropic transverse magnetoresistivity in alpha-YbAlB4|Yosuke Matsumoto,Jinpyo Hong,Kentaro Kuga,Satoru Nakatsuji###
(128999, 128999)
 Inthe weak field below 1 T, it is consistent with stronger c-f hybridizationin the ab plane which was suggested from the previous zero field resistivitymeasurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 1, 'T', 0],[69.0, 3, 'T', 1]

At
###Anisotropic transverse magnetoresistivity in alpha-YbAlB4|Yosuke Matsumoto,Jinpyo Hong,Kentaro Kuga,Satoru Nakatsuji###
(129059, 129059)
 At the higher field above 3 T, we observed a negative transversemagnetoresistivity for the field applied along the c<missing VAR>-axis.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 1, 'T', 1],[9.0, 3, 'T', 0]

WTe2
###Superconductivity emerging from suppressed large magnetoresistant state in WTe2|Defen Kang,Yazhou Zhou,Wei Yi,Chongli Yang,Jing Guo,Youguo Shi,Shan Zhang,Zhe Wang,Chao Zhang,Sheng Jiang,Aiguo Li,Ke Yang,Qi Wu,Guangming Zhang,Liling Sun,Zhongxian Zhao###
(129183, 129185)
Superconductivity emerging from suppressed large magnetoresistant state in WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[176.0, 10.5, 'GPa', 3],[214.0, 6.5, 'K', 4],[233.0, 2.6, 'K', 4]

WTe2
###Superconductivity emerging from suppressed large magnetoresistant state in WTe2|Defen Kang,Yazhou Zhou,Wei Yi,Chongli Yang,Jing Guo,Youguo Shi,Shan Zhang,Zhe Wang,Chao Zhang,Sheng Jiang,Aiguo Li,Ke Yang,Qi Wu,Guangming Zhang,Liling Sun,Zhongxian Zhao###
(129215, 129217)
 The recent discovery of large and non-saturating magnetoresistance (LMR) inWTe2 provides a unique playground to find new phenomena and significantperspective for potential applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 10.5, 'GPa', 2],[182.0, 6.5, 'K', 3],[201.0, 2.6, 'K', 3]

WTe2
###Superconductivity emerging from suppressed large magnetoresistant state in WTe2|Defen Kang,Yazhou Zhou,Wei Yi,Chongli Yang,Jing Guo,Youguo Shi,Shan Zhang,Zhe Wang,Chao Zhang,Sheng Jiang,Aiguo Li,Ke Yang,Qi Wu,Guangming Zhang,Liling Sun,Zhongxian Zhao###
(129287, 129289)
 Here we report the first observation ofsuperconductivity near the proximity of suppressed LMR state in pressurizedWTe2 through high-pressure synchrotron X<missing VAR>-ray diffraction, electricalresistance, magnetoresistance, and ac magnetic susceptibility measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 10.5, 'GPa', 1],[110.0, 6.5, 'K', 2],[129.0, 2.6, 'K', 2]

Pa
###Superconductivity emerging from suppressed large magnetoresistant state in WTe2|Defen Kang,Yazhou Zhou,Wei Yi,Chongli Yang,Jing Guo,Youguo Shi,Shan Zhang,Zhe Wang,Chao Zhang,Sheng Jiang,Aiguo Li,Ke Yang,Qi Wu,Guangming Zhang,Liling Sun,Zhongxian Zhao###
(129406, 129406)
 The maximum superconductingtransition temperature can be reached to 6.5 K at 15 G<missing VAR>Pa and it decreases downto 2.6 K at 25 G<missing VAR>Pa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 10.5, 'GPa', 1],[7.0, 6.5, 'K', 0],[12.0, 2.6, 'K', 0]

Pa
###Superconductivity emerging from suppressed large magnetoresistant state in WTe2|Defen Kang,Yazhou Zhou,Wei Yi,Chongli Yang,Jing Guo,Youguo Shi,Shan Zhang,Zhe Wang,Chao Zhang,Sheng Jiang,Aiguo Li,Ke Yang,Qi Wu,Guangming Zhang,Liling Sun,Zhongxian Zhao###
(129425, 129425)
 The maximum superconductingtransition temperature can be reached to 6.5 K at 15 G<missing VAR>Pa and it decreases downto 2.6 K at 25 G<missing VAR>Pa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 10.5, 'GPa', 1],[26.0, 6.5, 'K', 0],[7.0, 2.6, 'K', 0]

In
###Superconductivity emerging from suppressed large magnetoresistant state in WTe2|Defen Kang,Yazhou Zhou,Wei Yi,Chongli Yang,Jing Guo,Youguo Shi,Shan Zhang,Zhe Wang,Chao Zhang,Sheng Jiang,Aiguo Li,Ke Yang,Qi Wu,Guangming Zhang,Liling Sun,Zhongxian Zhao###
(129428, 129428)
 In-situ high pressure Hall coefficient measurements at 10K demonstrate that elevating pressure decreases hole carriers<missing VAR> population butincreases electron carriers<missing VAR> population.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 10.5, 'GPa', 2],[29.0, 6.5, 'K', 1],[10.0, 2.6, 'K', 1]

K
###Superconductivity emerging from suppressed large magnetoresistant state in WTe2|Defen Kang,Yazhou Zhou,Wei Yi,Chongli Yang,Jing Guo,Youguo Shi,Shan Zhang,Zhe Wang,Chao Zhang,Sheng Jiang,Aiguo Li,Ke Yang,Qi Wu,Guangming Zhang,Liling Sun,Zhongxian Zhao###
(129447, 129447)
 In-situ high pressure Hall coefficient measurements at 10K demonstrate that elevating pressure decreases hole carriers<missing VAR> population butincreases electron carriers<missing VAR> population.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 10.5, 'GPa', 2],[48.0, 6.5, 'K', 1],[29.0, 2.6, 'K', 1]

WTe2
###Superconductivity emerging from suppressed large magnetoresistant state in WTe2|Defen Kang,Yazhou Zhou,Wei Yi,Chongli Yang,Jing Guo,Youguo Shi,Shan Zhang,Zhe Wang,Chao Zhang,Sheng Jiang,Aiguo Li,Ke Yang,Qi Wu,Guangming Zhang,Liling Sun,Zhongxian Zhao###
(129530, 129532)
 Significantly, at the criticalpressure, we observed a sign change in the Hall coefficient, indicating apossible Lifshitz-type quantum phase transition in WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 10.5, 'GPa', 3],[131.0, 6.5, 'K', 2],[112.0, 2.6, 'K', 2]

In
###Low-field microwave absorption and magnetoresistance in iron nanostructures grown by electrodeposition on n-type lightly-doped silicon substrates|J. F. Felix,L. C. Figueiredo,J. B. S. Mendes,P. C. Morais,C. I. L. de Araujo###
(129582, 129582)
 In this study we investigate magnetic properties, surface morphology andcrystal structure in iron nanoclusters electrodeposited on lightly-doped (100)n<missing VAR>-type silicon substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/Si
###Low-field microwave absorption and magnetoresistance in iron nanostructures grown by electrodeposition on n-type lightly-doped silicon substrates|J. F. Felix,L. C. Figueiredo,J. B. S. Mendes,P. C. Morais,C. I. L. de Araujo###
(129661, 129663)
 Our goal is to investigate the spin injection anddetection in the Fe/Si lateral structures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

HgTe/CdTe
###Temperature-driven transition from a semiconductor to a topological insulator|Steffen Wiedmann,Andreas Jost,Cornelius Thienel,Christoph Brüne,Philipp Leubner,Hartmut Buhmann,Laurens W. Molenkamp,J. C. Maan,Uli Zeitler###
(129974, 129978)
 We report on a temperature-induced transition from a conventionalsemiconductor to a two-dimensional topological insulator investigated by meansof magnetotransport experiments on HgTe/CdTe quantum well structures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

At
###Temperature-driven transition from a semiconductor to a topological insulator|Steffen Wiedmann,Andreas Jost,Cornelius Thienel,Christoph Brüne,Philipp Leubner,Hartmut Buhmann,Laurens W. Molenkamp,J. C. Maan,Uli Zeitler###
(129987, 129987)
 At lowtemperatures, we are in the regime of the quantum spin Hall effect and observean ambipolar quantized Hall resistance by tuning the Fermi energy through thebulk band gap.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Temperature-driven transition from a semiconductor to a topological insulator|Steffen Wiedmann,Andreas Jost,Cornelius Thienel,Christoph Brüne,Philipp Leubner,Hartmut Buhmann,Laurens W. Molenkamp,J. C. Maan,Uli Zeitler###
(130054, 130054)
 At room temperature, we find electron and hole conduction thatcan be described by a classical two-carrier model.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###Electrical detection of magnetization reversal without auxiliary magnets|K. Olejník,V. Novák,J. Wunderlich,T. Jungwirth###
(130459, 130459)
 We observethe effect in a geometry in which the magnetization of a uniaxial (Ga,Mn)Asepilayer is set either parallel or antiparallel to a current-inducednon-equilibrium spin polarization of carriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 0.2, '%', 1]

Mn
###Electrical detection of magnetization reversal without auxiliary magnets|K. Olejník,V. Novák,J. Wunderlich,T. Jungwirth###
(130461, 130461)
 We observethe effect in a geometry in which the magnetization of a uniaxial (Ga,Mn)Asepilayer is set either parallel or antiparallel to a current-inducednon-equilibrium spin polarization of carriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 0.2, '%', 1]

As
###Electrical detection of magnetization reversal without auxiliary magnets|K. Olejník,V. Novák,J. Wunderlich,T. Jungwirth###
(130463, 130463)
 We observethe effect in a geometry in which the magnetization of a uniaxial (Ga,Mn)Asepilayer is set either parallel or antiparallel to a current-inducednon-equilibrium spin polarization of carriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 0.2, '%', 1]

In
###Electrical detection of magnetization reversal without auxiliary magnets|K. Olejník,V. Novák,J. Wunderlich,T. Jungwirth###
(130502, 130502)
 In our structure, thislinear-in-current magnetoresistance reaches 0.2% at current density of 106A cm-2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 0.2, '%', 0]

WS
###The large unsaturated magnetoresistance of Weyl semimetals|Yiming Pan,Huaiqiang Wang,Pengchao Lu,Jian Sun,Baigeng Wang,D. Y. Xing###
(130574, 130575)
 The Weyl semimetal (WSM) is a novel topological gapless state with promisesexotic transport due to chiral anomaly.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WS
###The large unsaturated magnetoresistance of Weyl semimetals|Yiming Pan,Huaiqiang Wang,Pengchao Lu,Jian Sun,Baigeng Wang,D. Y. Xing###
(130620, 130621)
 Recently, a family of nonmagnetic WSM<missing VAR>candidates including TaAs, NbAs, NbP etc is confirmed by first principlecalculation and experiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TaAs
###The large unsaturated magnetoresistance of Weyl semimetals|Yiming Pan,Huaiqiang Wang,Pengchao Lu,Jian Sun,Baigeng Wang,D. Y. Xing###
(130629, 130630)
 Recently, a family of nonmagnetic WSM<missing VAR>candidates including TaAs, NbAs, NbP etc is confirmed by first principlecalculation and experiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbAs
###The large unsaturated magnetoresistance of Weyl semimetals|Yiming Pan,Huaiqiang Wang,Pengchao Lu,Jian Sun,Baigeng Wang,D. Y. Xing###
(130633, 130634)
 Recently, a family of nonmagnetic WSM<missing VAR>candidates including TaAs, NbAs, NbP etc is confirmed by first principlecalculation and experiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbP
###The large unsaturated magnetoresistance of Weyl semimetals|Yiming Pan,Huaiqiang Wang,Pengchao Lu,Jian Sun,Baigeng Wang,D. Y. Xing###
(130637, 130638)
 Recently, a family of nonmagnetic WSM<missing VAR>candidates including TaAs, NbAs, NbP etc is confirmed by first principlecalculation and experiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TaAs
###The large unsaturated magnetoresistance of Weyl semimetals|Yiming Pan,Huaiqiang Wang,Pengchao Lu,Jian Sun,Baigeng Wang,D. Y. Xing###
(130662, 130663)
 The TaAs family are reported to display the largeunsaturated magnetoresistance (XMR), which have not yet been explained.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Se2Te
###Linear magnetoresistance and surface to bulk coupling in topological insulator thin films|Sourabh Singh,R. K. Gopal,Jit Sarkar,Atul Pandey,Bhavesh G. Patel,Chiranjib Mitra###
(130937, 130941)
 Thin films of Bi2Se2Te and BiSbTeSe1.6 weregrown using Pulsed Laser Deposition technique and subjected to transportmeasurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BiSbTeSe1.6
###Linear magnetoresistance and surface to bulk coupling in topological insulator thin films|Sourabh Singh,R. K. Gopal,Jit Sarkar,Atul Pandey,Bhavesh G. Patel,Chiranjib Mitra###
(130945, 130949)
 Thin films of Bi2Se2Te and BiSbTeSe1.6 weregrown using Pulsed Laser Deposition technique and subjected to transportmeasurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3478260869565218,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2173913043478261,0.2173913043478261,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2173913043478261,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/Pt
###Relative weight of the inverse spin Hall and spin rectification effects for metallic Py,Fe/Pt and insulating YIG/Pt bilayers estimated by angular dependent spin pumping measurements|Sascha Keller,Jochen Greser,Matthias R. Schweizer,Andres Conca,Burkard Hillebrands,E. Th. Papaioannou###
(131250, 131252)
Relative weight of the inverse spin Hall and spin rectification effects for metallic Py,Fe/Pt and insulating YIG<missing VAR>/Pt bilayers estimated by angular dependent spin pumping measurements.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

YI
###Relative weight of the inverse spin Hall and spin rectification effects for metallic Py,Fe/Pt and insulating YIG/Pt bilayers estimated by angular dependent spin pumping measurements|Sascha Keller,Jochen Greser,Matthias R. Schweizer,Andres Conca,Burkard Hillebrands,E. Th. Papaioannou###
(131258, 131259)
Relative weight of the inverse spin Hall and spin rectification effects for metallic Py,Fe/Pt and insulating YIG<missing VAR>/Pt bilayers estimated by angular dependent spin pumping measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Relative weight of the inverse spin Hall and spin rectification effects for metallic Py,Fe/Pt and insulating YIG/Pt bilayers estimated by angular dependent spin pumping measurements|Sascha Keller,Jochen Greser,Matthias R. Schweizer,Andres Conca,Burkard Hillebrands,E. Th. Papaioannou###
(131262, 131262)
Relative weight of the inverse spin Hall and spin rectification effects for metallic Py,Fe/Pt and insulating YIG<missing VAR>/Pt bilayers estimated by angular dependent spin pumping measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Relative weight of the inverse spin Hall and spin rectification effects for metallic Py,Fe/Pt and insulating YIG/Pt bilayers estimated by angular dependent spin pumping measurements|Sascha Keller,Jochen Greser,Matthias R. Schweizer,Andres Conca,Burkard Hillebrands,E. Th. Papaioannou###
(131313, 131313)
 We quantify the relative weight of inverse spin Hall and spin rectificationeffects occurring in R<missing VAR>F-sputtered polycrystalline permalloy, molecular beamepitaxy-grown epitaxial iron and liquid phase epitaxy-grown yttrium-iron-garnetbilayer systems with different capping materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO/CoFeB
###Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance|Mengxing Wang,Wenlong Cai,Kaihua Cao,Jiaqi Zhou,Jerzy Wrona,Shouzhong Peng,Huaiwen Yang,Jiaqi Wei,Wang Kang,Youguang Zhang,Jürgen Langer,Berthold Ocker,Albert Fert,Weisheng Zhao###
(131597, 131602)
 Perpendicular magnetic tunnel junctions based on MgO/CoFeB structures are ofparticular interest for magnetic random-access memories because of theirexcellent thermal stability, scaling potential, and power dissipation.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[153.0, 249, '%', 2],[178.0, 2, ',', 3],[312.0, 3.0, 'MA', 5],[325.0, 45, 'nm', 6]

W
###Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance|Mengxing Wang,Wenlong Cai,Kaihua Cao,Jiaqi Zhou,Jerzy Wrona,Shouzhong Peng,Huaiwen Yang,Jiaqi Wei,Wang Kang,Youguang Zhang,Jürgen Langer,Berthold Ocker,Albert Fert,Weisheng Zhao###
(131794, 131794)
mum<missing VAR>2, whichconsists of atom-thick W layers and double MgO/CoFeB interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 249, '%', 1],[14.0, 2, ',', 0],[120.0, 3.0, 'MA', 2],[133.0, 45, 'nm', 3]

MgO/CoFeB
###Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance|Mengxing Wang,Wenlong Cai,Kaihua Cao,Jiaqi Zhou,Jerzy Wrona,Shouzhong Peng,Huaiwen Yang,Jiaqi Wei,Wang Kang,Youguang Zhang,Jürgen Langer,Berthold Ocker,Albert Fert,Weisheng Zhao###
(131802, 131807)
mum<missing VAR>2, whichconsists of atom-thick W layers and double MgO/CoFeB interfaces.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[47.0, 249, '%', 1],[22.0, 2, ',', 0],[107.0, 3.0, 'MA', 2],[120.0, 45, 'nm', 3]

W
###Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance|Mengxing Wang,Wenlong Cai,Kaihua Cao,Jiaqi Zhou,Jerzy Wrona,Shouzhong Peng,Huaiwen Yang,Jiaqi Wei,Wang Kang,Youguang Zhang,Jürgen Langer,Berthold Ocker,Albert Fert,Weisheng Zhao###
(131833, 131833)
 The efficientresonant tunnelling transmission induced by the atom-thick W layers couldcontribute to the larger magnetoresistance ratio than conventional structureswith Ta layers, in addition to the robustness of W layers against hightemperature diffusion during annealing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 249, '%', 2],[53.0, 2, ',', 1],[81.0, 3.0, 'MA', 1],[94.0, 45, 'nm', 2]

Ta
###Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance|Mengxing Wang,Wenlong Cai,Kaihua Cao,Jiaqi Zhou,Jerzy Wrona,Shouzhong Peng,Huaiwen Yang,Jiaqi Wei,Wang Kang,Youguang Zhang,Jürgen Langer,Berthold Ocker,Albert Fert,Weisheng Zhao###
(131861, 131861)
 The efficientresonant tunnelling transmission induced by the atom-thick W layers couldcontribute to the larger magnetoresistance ratio than conventional structureswith Ta layers, in addition to the robustness of W layers against hightemperature diffusion during annealing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 249, '%', 2],[81.0, 2, ',', 1],[53.0, 3.0, 'MA', 1],[66.0, 45, 'nm', 2]

W
###Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance|Mengxing Wang,Wenlong Cai,Kaihua Cao,Jiaqi Zhou,Jerzy Wrona,Shouzhong Peng,Huaiwen Yang,Jiaqi Wei,Wang Kang,Youguang Zhang,Jürgen Langer,Berthold Ocker,Albert Fert,Weisheng Zhao###
(131878, 131878)
 The efficientresonant tunnelling transmission induced by the atom-thick W layers couldcontribute to the larger magnetoresistance ratio than conventional structureswith Ta layers, in addition to the robustness of W layers against hightemperature diffusion during annealing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 249, '%', 2],[98.0, 2, ',', 1],[36.0, 3.0, 'MA', 1],[49.0, 45, 'nm', 2]

Fe/MoS2/Fe
###Efficient spin injection and giant magnetoresistance in Fe/MoS$_2$/Fe junctions|Kapildeb Dolui,Awadhesh Narayan,Ivan Rungger,Stefano Sanvito###
(132274, 132280)
Efficient spin injection and giant magnetoresistance in Fe/MoS2/Fe junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[113.0, 45, '%', 2],[173.0, 300, '%', 4]

Fe/MoS2/Fe
###Efficient spin injection and giant magnetoresistance in Fe/MoS$_2$/Fe junctions|Kapildeb Dolui,Awadhesh Narayan,Ivan Rungger,Stefano Sanvito###
(132295, 132301)
 We demonstrate giant magnetoresistance in Fe/MoS2/Fe junctions by means oftextitab-initio transport calculations.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[92.0, 45, '%', 1],[152.0, 300, '%', 3]

MoS2
###Efficient spin injection and giant magnetoresistance in Fe/MoS$_2$/Fe junctions|Kapildeb Dolui,Awadhesh Narayan,Ivan Rungger,Stefano Sanvito###
(132350, 132352)
 We show that junctions incorporatingeither a mono- or a bi-layer of MoS2 are metallic and that Fe acts as anefficient spin injector into MoS2 with an efficiency of about 45%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 45, '%', 0],[101.0, 300, '%', 2]

Fe
###Efficient spin injection and giant magnetoresistance in Fe/MoS$_2$/Fe junctions|Kapildeb Dolui,Awadhesh Narayan,Ivan Rungger,Stefano Sanvito###
(132362, 132362)
 We show that junctions incorporatingeither a mono- or a bi-layer of MoS2 are metallic and that Fe acts as anefficient spin injector into MoS2 with an efficiency of about 45%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 45, '%', 0],[91.0, 300, '%', 2]

MoS2
###Efficient spin injection and giant magnetoresistance in Fe/MoS$_2$/Fe junctions|Kapildeb Dolui,Awadhesh Narayan,Ivan Rungger,Stefano Sanvito###
(132379, 132381)
 We show that junctions incorporatingeither a mono- or a bi-layer of MoS2 are metallic and that Fe acts as anefficient spin injector into MoS2 with an efficiency of about 45%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 45, '%', 0],[72.0, 300, '%', 2]

Fe
###Efficient spin injection and giant magnetoresistance in Fe/MoS$_2$/Fe junctions|Kapildeb Dolui,Awadhesh Narayan,Ivan Rungger,Stefano Sanvito###
(132418, 132418)
 This isthe result of the strong coupling between the Fe and S atoms at the interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 45, '%', 1],[35.0, 300, '%', 1]

S
###Efficient spin injection and giant magnetoresistance in Fe/MoS$_2$/Fe junctions|Kapildeb Dolui,Awadhesh Narayan,Ivan Rungger,Stefano Sanvito###
(132422, 132422)
 This isthe result of the strong coupling between the Fe and S atoms at the interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 45, '%', 1],[31.0, 300, '%', 1]

K
###Negative magnetoresistance dynamics in expanded graphite under hydrostatic pressure up to 1.8 GPa|V. V. Slyusarev,P. I. Polyakov###
(132614, 132614)
 Basal plane resistivity of expanded graphite was studied under simultaneousinfluence of hydrostatic pressure up to 1.8 GPa and magnetic field 0.8 T in the77-300 K temperature region.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 1.8, 'GPa', 1],[18.0, 1.8, 'GPa', 0],[11.0, 0.8, 'T', 0],[62.0, 80, '%', 2],[88.0, 0.6, 'GPa', 3],[123.0, 15, '%', 4],[127.0, 0.6, 'GPa', 4]

Si
###Observation of large spin accumulation voltages in non-degenerate Si spin devices due to spin drift effect: Experiments and theory|Takayuki Tahara,Yuichiro Ando,Makoto Kameno,Hayato Koike,Kazuhito Tanaka,Shinji Miwa,Yoshishige Suzuki,Tomoyuki Sasaki,Tohru Oikawa,Masashi Shiraishi###
(132841, 132841)
Observation of large spin accumulation voltages in non-degenerate Si spin devices due to spin drift effect Experiments and theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 1.5, 'mV', 1],[41.0, 1, 'mA', 1]

Si
###Observation of large spin accumulation voltages in non-degenerate Si spin devices due to spin drift effect: Experiments and theory|Takayuki Tahara,Yuichiro Ando,Makoto Kameno,Hayato Koike,Kazuhito Tanaka,Shinji Miwa,Yoshishige Suzuki,Tomoyuki Sasaki,Tohru Oikawa,Masashi Shiraishi###
(132928, 132928)
, amagnetoresistance of 1.5 Omega, was measured by means of the localthree-terminal magnetoresistance in nondegenerate Si-based lateral spin valves(L<missing VAR>SVs) at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 1.5, 'mV', 1],[46.0, 1, 'mA', 1]

S
###Observation of large spin accumulation voltages in non-degenerate Si spin devices due to spin drift effect: Experiments and theory|Takayuki Tahara,Yuichiro Ando,Makoto Kameno,Hayato Koike,Kazuhito Tanaka,Shinji Miwa,Yoshishige Suzuki,Tomoyuki Sasaki,Tohru Oikawa,Masashi Shiraishi###
(132941, 132941)
, amagnetoresistance of 1.5 Omega, was measured by means of the localthree-terminal magnetoresistance in nondegenerate Si-based lateral spin valves(L<missing VAR>SVs) at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 1.5, 'mV', 1],[59.0, 1, 'mA', 1]

S
###Observation of large spin accumulation voltages in non-degenerate Si spin devices due to spin drift effect: Experiments and theory|Takayuki Tahara,Yuichiro Ando,Makoto Kameno,Hayato Koike,Kazuhito Tanaka,Shinji Miwa,Yoshishige Suzuki,Tomoyuki Sasaki,Tohru Oikawa,Masashi Shiraishi###
(132976, 132976)
 This is the largest spin-accumulation voltagemeasured in semiconductor-based L<missing VAR>SVs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 1.5, 'mV', 2],[94.0, 1, 'mA', 2]

OSF
###Observation of large spin accumulation voltages in non-degenerate Si spin devices due to spin drift effect: Experiments and theory|Takayuki Tahara,Yuichiro Ando,Makoto Kameno,Hayato Koike,Kazuhito Tanaka,Shinji Miwa,Yoshishige Suzuki,Tomoyuki Sasaki,Tohru Oikawa,Masashi Shiraishi###
(133114, 133116)
 This finding provides auseful guiding principle for spin metal-oxide semiconductor field-effecttransistor (M<missing VAR>OSFET) operations.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[235.0, 1.5, 'mV', 5],[232.0, 1, 'mA', 5]

Sr2RuO4
###Magnetoresistance oscillations and the half-flux-quantum state in spin-triplet superconductor Sr2RuO4|X. Cai,Y. A. Ying,J. E. Ortmann,W. -F. Sun,Z. -Q. Mao,Y. Liu###
(133156, 133160)
Magnetoresistance oscillations and the half-flux-quantum state in spin-triplet superconductor Sr2RuO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr2RuO4
###Magnetoresistance oscillations and the half-flux-quantum state in spin-triplet superconductor Sr2RuO4|X. Cai,Y. A. Ying,J. E. Ortmann,W. -F. Sun,Z. -Q. Mao,Y. Liu###
(133210, 133214)
 We report results of our low-temperature magneto electric transportmeasurements on micron-sized short cylinders of odd-parity, spin-tripletsuperconductor Sr2RuO4 with the cylinder axis along the c<missing VAR> axis.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(InSb)
###Transition from positive to negative magnetoresistance induced by a constriction in semiconductor nanowire|Maciej Wołoszyn,Bartłomiej J. Spisak,Paweł Wójcik,Janusz Adamowski###
(133511, 133514)
 We have studied the magnetotransport through an indium antimonide (InSb)nanowire grown in [111] direction, with a geometric constriction and in anexternal magnetic field applied along the nanowire axis.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.7Sr0.3MnO3
###Polaronic metal phases in La$_{0.7}$Sr$_{0.3}$MnO$_{3}$ uncovered by inelastic neutron and x-ray scattering|M. Maschek,D. Lamago,J. -P. Castellan,A. Bosak,D. Reznik,F. Weber###
(133805, 133811)
Polaronic metal phases in La0.7Sr0.3MnO3 uncovered by inelastic neutron and x<missing VAR>-ray scattering.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 350, 'K', 2],[198.0, 200, 'K', 4],[244.0, 1, ',', 4]

La0.7Sr0.3MnO3
###Polaronic metal phases in La$_{0.7}$Sr$_{0.3}$MnO$_{3}$ uncovered by inelastic neutron and x-ray scattering|M. Maschek,D. Lamago,J. -P. Castellan,A. Bosak,D. Reznik,F. Weber###
(133847, 133853)
 Among colossal magnetoresistive manganites the prototypical ferromagneticmanganite La0.7Sr0.3MnO3 has a relatively smallmagnetoresistance, and has been long assumed to have only weak electron-latticecoupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 350, 'K', 1],[156.0, 200, 'K', 3],[202.0, 1, ',', 3]

La0.7Sr0.3MnO3
###Polaronic metal phases in La$_{0.7}$Sr$_{0.3}$MnO$_{3}$ uncovered by inelastic neutron and x-ray scattering|M. Maschek,D. Lamago,J. -P. Castellan,A. Bosak,D. Reznik,F. Weber###
(133901, 133907)
 Here we report that La0.7Sr0.3MnO3 has strongelectron-phonon coupling Our neutron and x<missing VAR>-ray scattering experiments showstrong softening and broadening of transverse acoustic phonons on heatingthrough the Curie temperature T<missing VAR>C  350 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 350, 'K', 0],[102.0, 200, 'K', 2],[148.0, 1, ',', 2]

C
###Polaronic metal phases in La$_{0.7}$Sr$_{0.3}$MnO$_{3}$ uncovered by inelastic neutron and x-ray scattering|M. Maschek,D. Lamago,J. -P. Castellan,A. Bosak,D. Reznik,F. Weber###
(133967, 133967)
 Here we report that La0.7Sr0.3MnO3 has strongelectron-phonon coupling Our neutron and x<missing VAR>-ray scattering experiments showstrong softening and broadening of transverse acoustic phonons on heatingthrough the Curie temperature T<missing VAR>C  350 K.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 350, 'K', 0],[42.0, 200, 'K', 2],[88.0, 1, ',', 2]

C
###Polaronic metal phases in La$_{0.7}$Sr$_{0.3}$MnO$_{3}$ uncovered by inelastic neutron and x-ray scattering|M. Maschek,D. Lamago,J. -P. Castellan,A. Bosak,D. Reznik,F. Weber###
(134014, 134014)
 The ferromagneticpolaronic metal phase between 200 K and T<missing VAR>C is characterized by quasielasticscattering from dynamic CE<missing VAR>-type polarons with the relatively short lifetime ofmathbftauapprox 1,rmps.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 350, 'K', 2],[5.0, 200, 'K', 0],[41.0, 1, ',', 0]

C
###Polaronic metal phases in La$_{0.7}$Sr$_{0.3}$MnO$_{3}$ uncovered by inelastic neutron and x-ray scattering|M. Maschek,D. Lamago,J. -P. Castellan,A. Bosak,D. Reznik,F. Weber###
(134031, 134031)
 The ferromagneticpolaronic metal phase between 200 K and T<missing VAR>C is characterized by quasielasticscattering from dynamic CE<missing VAR>-type polarons with the relatively short lifetime ofmathbftauapprox 1,rmps.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 350, 'K', 2],[22.0, 200, 'K', 0],[24.0, 1, ',', 0]

C
###Polaronic metal phases in La$_{0.7}$Sr$_{0.3}$MnO$_{3}$ uncovered by inelastic neutron and x-ray scattering|M. Maschek,D. Lamago,J. -P. Castellan,A. Bosak,D. Reznik,F. Weber###
(134075, 134075)
 This scattering is greatly enhanced aboveT<missing VAR>C in the paramagnetic polaronic metal phase.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 350, 'K', 3],[66.0, 200, 'K', 1],[20.0, 1, ',', 1]

Rh/Y3Fe5O12
###Pure spin-Hall magnetoresistance in Rh/Y3Fe5O12 hybrid|T. Shang,Q. F. Zhan,H. L. Yang,Z. H. Zuo,Y. L. Xie,H. H. Li,L. P. Liu,B. M. Wang,Y. H. Wu,S. Zhang,Run-Wei Li###
(134160, 134167)
Pure spin-Hall magnetoresistance in Rh/Y3Fe5O12 hybrid.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

H
###Pure spin-Hall magnetoresistance in Rh/Y3Fe5O12 hybrid|T. Shang,Q. F. Zhan,H. L. Yang,Z. H. Zuo,Y. L. Xie,H. H. Li,L. P. Liu,B. M. Wang,Y. H. Wu,S. Zhang,Run-Wei Li###
(134203, 134203)
 We report an investigation of anisotropic magnetoresistance (AMR) andanomalous Hall resistance (AHR) of Rh and Pt thin films sputtered on epitaxialY3Fe5O12 (YIG) ferromagnetic insulator films.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Rh
###Pure spin-Hall magnetoresistance in Rh/Y3Fe5O12 hybrid|T. Shang,Q. F. Zhan,H. L. Yang,Z. H. Zuo,Y. L. Xie,H. H. Li,L. P. Liu,B. M. Wang,Y. H. Wu,S. Zhang,Run-Wei Li###
(134209, 134209)
 We report an investigation of anisotropic magnetoresistance (AMR) andanomalous Hall resistance (AHR) of Rh and Pt thin films sputtered on epitaxialY3Fe5O12 (YIG) ferromagnetic insulator films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Pure spin-Hall magnetoresistance in Rh/Y3Fe5O12 hybrid|T. Shang,Q. F. Zhan,H. L. Yang,Z. H. Zuo,Y. L. Xie,H. H. Li,L. P. Liu,B. M. Wang,Y. H. Wu,S. Zhang,Run-Wei Li###
(134213, 134213)
 We report an investigation of anisotropic magnetoresistance (AMR) andanomalous Hall resistance (AHR) of Rh and Pt thin films sputtered on epitaxialY3Fe5O12 (YIG) ferromagnetic insulator films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Y3Fe5O12
###Pure spin-Hall magnetoresistance in Rh/Y3Fe5O12 hybrid|T. Shang,Q. F. Zhan,H. L. Yang,Z. H. Zuo,Y. L. Xie,H. H. Li,L. P. Liu,B. M. Wang,Y. H. Wu,S. Zhang,Run-Wei Li###
(134226, 134231)
 We report an investigation of anisotropic magnetoresistance (AMR) andanomalous Hall resistance (AHR) of Rh and Pt thin films sputtered on epitaxialY3Fe5O12 (YIG) ferromagnetic insulator films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YI
###Pure spin-Hall magnetoresistance in Rh/Y3Fe5O12 hybrid|T. Shang,Q. F. Zhan,H. L. Yang,Z. H. Zuo,Y. L. Xie,H. H. Li,L. P. Liu,B. M. Wang,Y. H. Wu,S. Zhang,Run-Wei Li###
(134234, 134235)
 We report an investigation of anisotropic magnetoresistance (AMR) andanomalous Hall resistance (AHR) of Rh and Pt thin films sputtered on epitaxialY3Fe5O12 (YIG) ferromagnetic insulator films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt/YI
###Pure spin-Hall magnetoresistance in Rh/Y3Fe5O12 hybrid|T. Shang,Q. F. Zhan,H. L. Yang,Z. H. Zuo,Y. L. Xie,H. H. Li,L. P. Liu,B. M. Wang,Y. H. Wu,S. Zhang,Run-Wei Li###
(134250, 134253)
 For the Pt/YIG<missing VAR> hybrid,large spin-Hall magnetoresistance (SMR) along with a sizable conventionalanisotropic magnetoresistance (CAMR) and a nontrivial temperature dependence ofAHR<missing VAR> were observed in the temperature range of 5-300 K.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

S
###Pure spin-Hall magnetoresistance in Rh/Y3Fe5O12 hybrid|T. Shang,Q. F. Zhan,H. L. Yang,Z. H. Zuo,Y. L. Xie,H. H. Li,L. P. Liu,B. M. Wang,Y. H. Wu,S. Zhang,Run-Wei Li###
(134269, 134269)
 For the Pt/YIG<missing VAR> hybrid,large spin-Hall magnetoresistance (SMR) along with a sizable conventionalanisotropic magnetoresistance (CAMR) and a nontrivial temperature dependence ofAHR<missing VAR> were observed in the temperature range of 5-300 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Pure spin-Hall magnetoresistance in Rh/Y3Fe5O12 hybrid|T. Shang,Q. F. Zhan,H. L. Yang,Z. H. Zuo,Y. L. Xie,H. H. Li,L. P. Liu,B. M. Wang,Y. H. Wu,S. Zhang,Run-Wei Li###
(134290, 134290)
 For the Pt/YIG<missing VAR> hybrid,large spin-Hall magnetoresistance (SMR) along with a sizable conventionalanisotropic magnetoresistance (CAMR) and a nontrivial temperature dependence ofAHR<missing VAR> were observed in the temperature range of 5-300 K.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Pure spin-Hall magnetoresistance in Rh/Y3Fe5O12 hybrid|T. Shang,Q. F. Zhan,H. L. Yang,Z. H. Zuo,Y. L. Xie,H. H. Li,L. P. Liu,B. M. Wang,Y. H. Wu,S. Zhang,Run-Wei Li###
(134310, 134310)
 For the Pt/YIG<missing VAR> hybrid,large spin-Hall magnetoresistance (SMR) along with a sizable conventionalanisotropic magnetoresistance (CAMR) and a nontrivial temperature dependence ofAHR<missing VAR> were observed in the temperature range of 5-300 K.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Pure spin-Hall magnetoresistance in Rh/Y3Fe5O12 hybrid|T. Shang,Q. F. Zhan,H. L. Yang,Z. H. Zuo,Y. L. Xie,H. H. Li,L. P. Liu,B. M. Wang,Y. H. Wu,S. Zhang,Run-Wei Li###
(134331, 134331)
 For the Pt/YIG<missing VAR> hybrid,large spin-Hall magnetoresistance (SMR) along with a sizable conventionalanisotropic magnetoresistance (CAMR) and a nontrivial temperature dependence ofAHR<missing VAR> were observed in the temperature range of 5-300 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Pure spin-Hall magnetoresistance in Rh/Y3Fe5O12 hybrid|T. Shang,Q. F. Zhan,H. L. Yang,Z. H. Zuo,Y. L. Xie,H. H. Li,L. P. Liu,B. M. Wang,Y. H. Wu,S. Zhang,Run-Wei Li###
(134334, 134334)
 In contrast, a reducedSMR with negligible CAMR and AHR<missing VAR> was found in Rh/YIG<missing VAR> hybrid.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Pure spin-Hall magnetoresistance in Rh/Y3Fe5O12 hybrid|T. Shang,Q. F. Zhan,H. L. Yang,Z. H. Zuo,Y. L. Xie,H. H. Li,L. P. Liu,B. M. Wang,Y. H. Wu,S. Zhang,Run-Wei Li###
(134344, 134344)
 In contrast, a reducedSMR with negligible CAMR and AHR<missing VAR> was found in Rh/YIG<missing VAR> hybrid.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Pure spin-Hall magnetoresistance in Rh/Y3Fe5O12 hybrid|T. Shang,Q. F. Zhan,H. L. Yang,Z. H. Zuo,Y. L. Xie,H. H. Li,L. P. Liu,B. M. Wang,Y. H. Wu,S. Zhang,Run-Wei Li###
(134352, 134352)
 In contrast, a reducedSMR with negligible CAMR and AHR<missing VAR> was found in Rh/YIG<missing VAR> hybrid.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Pure spin-Hall magnetoresistance in Rh/Y3Fe5O12 hybrid|T. Shang,Q. F. Zhan,H. L. Yang,Z. H. Zuo,Y. L. Xie,H. H. Li,L. P. Liu,B. M. Wang,Y. H. Wu,S. Zhang,Run-Wei Li###
(134360, 134360)
 In contrast, a reducedSMR with negligible CAMR and AHR<missing VAR> was found in Rh/YIG<missing VAR> hybrid.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Rh/YI
###Pure spin-Hall magnetoresistance in Rh/Y3Fe5O12 hybrid|T. Shang,Q. F. Zhan,H. L. Yang,Z. H. Zuo,Y. L. Xie,H. H. Li,L. P. Liu,B. M. Wang,Y. H. Wu,S. Zhang,Run-Wei Li###
(134369, 134372)
 In contrast, a reducedSMR with negligible CAMR and AHR<missing VAR> was found in Rh/YIG<missing VAR> hybrid.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

C
###Pure spin-Hall magnetoresistance in Rh/Y3Fe5O12 hybrid|T. Shang,Q. F. Zhan,H. L. Yang,Z. H. Zuo,Y. L. Xie,H. H. Li,L. P. Liu,B. M. Wang,Y. H. Wu,S. Zhang,Run-Wei Li###
(134380, 134380)
 Since CAMR and AHR<missing VAR>are characteristics for all ferromagnetic metals, our results suggest that thePt is likely magnetized by YIG<missing VAR> due to the magnetic proximity effect (MPE) whileRh remains free of MPE.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Pure spin-Hall magnetoresistance in Rh/Y3Fe5O12 hybrid|T. Shang,Q. F. Zhan,H. L. Yang,Z. H. Zuo,Y. L. Xie,H. H. Li,L. P. Liu,B. M. Wang,Y. H. Wu,S. Zhang,Run-Wei Li###
(134388, 134388)
 Since CAMR and AHR<missing VAR>are characteristics for all ferromagnetic metals, our results suggest that thePt is likely magnetized by YIG<missing VAR> due to the magnetic proximity effect (MPE) whileRh remains free of MPE.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Pure spin-Hall magnetoresistance in Rh/Y3Fe5O12 hybrid|T. Shang,Q. F. Zhan,H. L. Yang,Z. H. Zuo,Y. L. Xie,H. H. Li,L. P. Liu,B. M. Wang,Y. H. Wu,S. Zhang,Run-Wei Li###
(134416, 134416)
 Since CAMR and AHR<missing VAR>are characteristics for all ferromagnetic metals, our results suggest that thePt is likely magnetized by YIG<missing VAR> due to the magnetic proximity effect (MPE) whileRh remains free of MPE.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YI
###Pure spin-Hall magnetoresistance in Rh/Y3Fe5O12 hybrid|T. Shang,Q. F. Zhan,H. L. Yang,Z. H. Zuo,Y. L. Xie,H. H. Li,L. P. Liu,B. M. Wang,Y. H. Wu,S. Zhang,Run-Wei Li###
(134426, 134427)
 Since CAMR and AHR<missing VAR>are characteristics for all ferromagnetic metals, our results suggest that thePt is likely magnetized by YIG<missing VAR> due to the magnetic proximity effect (MPE) whileRh remains free of MPE.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Rh
###Pure spin-Hall magnetoresistance in Rh/Y3Fe5O12 hybrid|T. Shang,Q. F. Zhan,H. L. Yang,Z. H. Zuo,Y. L. Xie,H. H. Li,L. P. Liu,B. M. Wang,Y. H. Wu,S. Zhang,Run-Wei Li###
(134451, 134451)
 Since CAMR and AHR<missing VAR>are characteristics for all ferromagnetic metals, our results suggest that thePt is likely magnetized by YIG<missing VAR> due to the magnetic proximity effect (MPE) whileRh remains free of MPE.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Rh/YI
###Pure spin-Hall magnetoresistance in Rh/Y3Fe5O12 hybrid|T. Shang,Q. F. Zhan,H. L. Yang,Z. H. Zuo,Y. L. Xie,H. H. Li,L. P. Liu,B. M. Wang,Y. H. Wu,S. Zhang,Run-Wei Li###
(134468, 134471)
 Thus the Rh/YIG<missing VAR> hybrid could be an ideal model systemto explore physics and devices associated with pure spin current.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

LaAgBi2
###Quasi-two-dimensional Dirac fermions and quantum magnetoresistance in LaAgBi$_2$|Kefeng Wang,D. Graf,C. Petrovic###
(134536, 134539)
Quasi-two-dimensional Dirac fermions and quantum magnetoresistance in LaAgBi2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[212.0, 2, 'D', 5]

LaAgBi2
###Quasi-two-dimensional Dirac fermions and quantum magnetoresistance in LaAgBi$_2$|Kefeng Wang,D. Graf,C. Petrovic###
(134565, 134568)
 We report quasi-two-dimensional Dirac fermions and quantum magnetoresistancein LaAgBi2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[183.0, 2, 'D', 4]

B
###Quasi-two-dimensional Dirac fermions and quantum magnetoresistance in LaAgBi$_2$|Kefeng Wang,D. Graf,C. Petrovic###
(134683, 134683)
 The in-planetransverse magnetoresistance exhibits a crossover at a critical field Bfrom semiclassical weak-field B2 dependence to the high-field unsaturatedlinear magnetoresistance which is attributed to the quantum limit of the Diracfermions.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 2, 'D', 1]

B2
###Quasi-two-dimensional Dirac fermions and quantum magnetoresistance in LaAgBi$_2$|Kefeng Wang,D. Graf,C. Petrovic###
(134694, 134695)
 The in-planetransverse magnetoresistance exhibits a crossover at a critical field Bfrom semiclassical weak-field B2 dependence to the high-field unsaturatedlinear magnetoresistance which is attributed to the quantum limit of the Diracfermions.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 2, 'D', 1]

Bi
###Quasi-two-dimensional Dirac fermions and quantum magnetoresistance in LaAgBi$_2$|Kefeng Wang,D. Graf,C. Petrovic###
(134780, 134780)
 Our results suggest the existence of quasi 2D Dirac fermions inrare-earth based layered compounds with two-dimensional double-sized Bi squarenets, similar to (Ca,Sr)MnBi2, irrespective of magnetic order.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 2, 'D', 0]

Ca
###Quasi-two-dimensional Dirac fermions and quantum magnetoresistance in LaAgBi$_2$|Kefeng Wang,D. Graf,C. Petrovic###
(134793, 134793)
 Our results suggest the existence of quasi 2D Dirac fermions inrare-earth based layered compounds with two-dimensional double-sized Bi squarenets, similar to (Ca,Sr)MnBi2, irrespective of magnetic order.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 2, 'D', 0]

Sr
###Quasi-two-dimensional Dirac fermions and quantum magnetoresistance in LaAgBi$_2$|Kefeng Wang,D. Graf,C. Petrovic###
(134795, 134795)
 Our results suggest the existence of quasi 2D Dirac fermions inrare-earth based layered compounds with two-dimensional double-sized Bi squarenets, similar to (Ca,Sr)MnBi2, irrespective of magnetic order.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 2, 'D', 0]

MnBi2
###Quasi-two-dimensional Dirac fermions and quantum magnetoresistance in LaAgBi$_2$|Kefeng Wang,D. Graf,C. Petrovic###
(134797, 134799)
 Our results suggest the existence of quasi 2D Dirac fermions inrare-earth based layered compounds with two-dimensional double-sized Bi squarenets, similar to (Ca,Sr)MnBi2, irrespective of magnetic order.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 2, 'D', 0]

Sb2Te2Se
###Large magnetothermopower and Fermi surface reconstruction in Sb$_2$Te$_2$Se|Kefeng Wang,D. Graf,C. Petrovic###
(134833, 134837)
Large magnetothermopower and Fermi surface reconstruction in Sb2Te2Se.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 2, 'K', 4],[178.0, 150, 'K', 4]

Sb2Te2Se
###Large magnetothermopower and Fermi surface reconstruction in Sb$_2$Te$_2$Se|Kefeng Wang,D. Graf,C. Petrovic###
(134862, 134866)
 We report the magnetoresistance, magnetothermopower and quantum oscillationstudy of Sb2Te2Se single crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 2, 'K', 3],[149.0, 150, 'K', 3]

B
###Large magnetothermopower and Fermi surface reconstruction in Sb$_2$Te$_2$Se|Kefeng Wang,D. Graf,C. Petrovic###
(134898, 134898)
 The in-plane transversemagnetoresistance exhibits a crossover at a critical field B fromsemiclassical weak-field B2 dependence to the high-field unsaturated linearmagnetoresistance which persists up to the room temperature.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 2, 'K', 2],[117.0, 150, 'K', 2]

B2
###Large magnetothermopower and Fermi surface reconstruction in Sb$_2$Te$_2$Se|Kefeng Wang,D. Graf,C. Petrovic###
(134909, 134910)
 The in-plane transversemagnetoresistance exhibits a crossover at a critical field B fromsemiclassical weak-field B2 dependence to the high-field unsaturated linearmagnetoresistance which persists up to the room temperature.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 2, 'K', 2],[105.0, 150, 'K', 2]

In
###Radiation-induced resistance oscillations in 2D electron systems with strong Rashba coupling|Jesus Inarrea###
(135762, 135762)
 Inthe presence of radiation this beating pattern is strongly modified followingthe profile of radiation-induced magnetoresistance oscillations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[272.0, 2, 'D', 6]

Ta/Co
###Unidirectional spin Hall magnetoresistance in topological insulator/ferromagnetic layer heterostructures|Yang Lv,James Kally,Delin Zhang,Joon Sue Lee,Mahdi Jamali,Nitin Samarth,Jian-Ping Wang###
(136199, 136201)
 Our devices show a figure-of-merit (magnetoresistance percurrent density per total resistance) that is comparable to the highestreported values in all-metal Ta/Co bilayers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

RhSn4
###Large linear magnetoresistance in a transition-metal stannide $β$-RhSn$_4$|X. Z. Xing,C. Q. Xu,N. Zhou,B. Li,Jinglei Zhang,Z. X. Shi,Xiaofeng Xu###
(136231, 136233)
Large linear magnetoresistance in a transition-metal stannide -RhSn4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 600, '%', 2],[96.0, 2, 'K', 2],[102.0, 9, 'Tesla', 2]

RhSn4
###Large linear magnetoresistance in a transition-metal stannide $β$-RhSn$_4$|X. Z. Xing,C. Q. Xu,N. Zhou,B. Li,Jinglei Zhang,Z. X. Shi,Xiaofeng Xu###
(136361, 136363)
 Here we demonstrate a large linear-in-fieldmagnetoresistance, Delta rho/rho reaching as high as sim600% at 2 Kunder a 9 Tesla field, in the tetragonal phase of a transiton-metal stannidebeta-RhSn4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 600, '%', 0],[32.0, 2, 'K', 0],[26.0, 9, 'Tesla', 0]

PtSn4
###Large linear magnetoresistance in a transition-metal stannide $β$-RhSn$_4$|X. Z. Xing,C. Q. Xu,N. Zhou,B. Li,Jinglei Zhang,Z. X. Shi,Xiaofeng Xu###
(136515, 136517)
 Our results may help guiding the future quest forquantum magnetoresistive materials into the family of stannides, similar to therole played by PtSn4 with topological node arcs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[190.0, 600, '%', 2],[186.0, 2, 'K', 2],[180.0, 9, 'Tesla', 2]

In
###Determination of spin relaxation times in heavy metals via 2nd harmonic spin injection magnetoresistance|C. Fang,C. H. Wan,X. M. Liu,B. S. Yang,J. Y. Qin,B. S. Tao,H. Wu,X. Zhang,Z. M. Jin,A. Hoffmann,X. F. Han###
(136564, 136564)
 In tunnel junctions between ferromagnets and heavy elements with strong spinorbit coupling the magnetoresistance is often dominated by tunnelinganisotropic magnetoresistance (TAMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 2, 'nd', 1],[121.0, 2, 'nd', 2],[142.0, 2, 'nd', 3]

C
###Determination of spin relaxation times in heavy metals via 2nd harmonic spin injection magnetoresistance|C. Fang,C. H. Wan,X. M. Liu,B. S. Yang,J. Y. Qin,B. S. Tao,H. Wu,X. Zhang,Z. M. Jin,A. Hoffmann,X. F. Han###
(136625, 136625)
 This makes conventional D<missing VAR>C spin injectiontechniques impractical for determining the spin relaxation time (taus).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 2, 'nd', 2],[60.0, 2, 'nd', 1],[81.0, 2, 'nd', 2]

SI
###Determination of spin relaxation times in heavy metals via 2nd harmonic spin injection magnetoresistance|C. Fang,C. H. Wan,X. M. Liu,B. S. Yang,J. Y. Qin,B. S. Tao,H. Wu,X. Zhang,Z. M. Jin,A. Hoffmann,X. F. Han###
(136696, 136697)
Here, we show that this obstacle for measurements of taus<missing VAR> can be overcomeby 2nd harmonic spin-injection-magnetoresistance (SIMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 2, 'nd', 3],[11.0, 2, 'nd', 0],[9.0, 2, 'nd', 1]

In
###Determination of spin relaxation times in heavy metals via 2nd harmonic spin injection magnetoresistance|C. Fang,C. H. Wan,X. M. Liu,B. S. Yang,J. Y. Qin,B. S. Tao,H. Wu,X. Zhang,Z. M. Jin,A. Hoffmann,X. F. Han###
(136703, 136703)
 In the 2nd harmonicsignal the SIMR is comparable in magnitude to TAMR, thus enabling Hanle-inducedSIMR as a powerful tool to directly determine taus<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 2, 'nd', 4],[18.0, 2, 'nd', 1],[3.0, 2, 'nd', 0]

SI
###Determination of spin relaxation times in heavy metals via 2nd harmonic spin injection magnetoresistance|C. Fang,C. H. Wan,X. M. Liu,B. S. Yang,J. Y. Qin,B. S. Tao,H. Wu,X. Zhang,Z. M. Jin,A. Hoffmann,X. F. Han###
(136715, 136716)
 In the 2nd harmonicsignal the SIMR is comparable in magnitude to TAMR, thus enabling Hanle-inducedSIMR as a powerful tool to directly determine taus<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 2, 'nd', 4],[30.0, 2, 'nd', 1],[9.0, 2, 'nd', 0]

SI
###Determination of spin relaxation times in heavy metals via 2nd harmonic spin injection magnetoresistance|C. Fang,C. H. Wan,X. M. Liu,B. S. Yang,J. Y. Qin,B. S. Tao,H. Wu,X. Zhang,Z. M. Jin,A. Hoffmann,X. F. Han###
(136745, 136746)
 In the 2nd harmonicsignal the SIMR is comparable in magnitude to TAMR, thus enabling Hanle-inducedSIMR as a powerful tool to directly determine taus<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[192.0, 2, 'nd', 4],[60.0, 2, 'nd', 1],[39.0, 2, 'nd', 0]

Pt
###Determination of spin relaxation times in heavy metals via 2nd harmonic spin injection magnetoresistance|C. Fang,C. H. Wan,X. M. Liu,B. S. Yang,J. Y. Qin,B. S. Tao,H. Wu,X. Zhang,Z. M. Jin,A. Hoffmann,X. F. Han###
(136789, 136789)
 Using this approach wedetermined the spin relaxation time of Pt and Ta and their temperaturedependences.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[236.0, 2, 'nd', 5],[104.0, 2, 'nd', 2],[83.0, 2, 'nd', 1]

Ta
###Determination of spin relaxation times in heavy metals via 2nd harmonic spin injection magnetoresistance|C. Fang,C. H. Wan,X. M. Liu,B. S. Yang,J. Y. Qin,B. S. Tao,H. Wu,X. Zhang,Z. M. Jin,A. Hoffmann,X. F. Han###
(136793, 136793)
 Using this approach wedetermined the spin relaxation time of Pt and Ta and their temperaturedependences.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[240.0, 2, 'nd', 5],[108.0, 2, 'nd', 2],[87.0, 2, 'nd', 1]

Pt
###Determination of spin relaxation times in heavy metals via 2nd harmonic spin injection magnetoresistance|C. Fang,C. H. Wan,X. M. Liu,B. S. Yang,J. Y. Qin,B. S. Tao,H. Wu,X. Zhang,Z. M. Jin,A. Hoffmann,X. F. Han###
(136813, 136813)
 The spin relaxation in Pt seems to be governed by Elliott-Yafetmechanism due to a constant resistivity timesspin relaxation time productover a wide temperature range.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[260.0, 2, 'nd', 6],[128.0, 2, 'nd', 3],[107.0, 2, 'nd', 2]

Cr11Ge19
###Magnetotransport properties in a noncentrosymmetric itinerant magnet Cr$_{11}$Ge$_{19}$|N. Jiang,Y. Nii,R. Ishii,Z. Hiroi,Y. Onose###
(136885, 136888)
Magnetotransport properties in a noncentrosymmetric itinerant magnet Cr11Ge19.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.36666666666666664,0,0,0,0,0,0,0,0.6333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 30, 'K', 2],[119.0, 30, 'K', 3],[162.0, 30, 'K', 5]

Cr11Ge19
###Magnetotransport properties in a noncentrosymmetric itinerant magnet Cr$_{11}$Ge$_{19}$|N. Jiang,Y. Nii,R. Ishii,Z. Hiroi,Y. Onose###
(136918, 136921)
 We have investigated anomalous Hall effect and magnetoresistance in anoncentrosymmetric itinerant magnet Cr11Ge19.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.36666666666666664,0,0,0,0,0,0,0,0.6333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 30, 'K', 1],[86.0, 30, 'K', 2],[129.0, 30, 'K', 4]

K
###Magnetotransport properties in a noncentrosymmetric itinerant magnet Cr$_{11}$Ge$_{19}$|N. Jiang,Y. Nii,R. Ishii,Z. Hiroi,Y. Onose###
(137095, 137095)
 Because there is no anomaly in the temperature dependenceof magnetization around 30 K, the origin of these observations in transportproperties is ascribed to some electronic structure with the energy scale of 30K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 30, 'K', 3],[88.0, 30, 'K', 2],[45.0, 30, 'K', 0]

Ru2MnGe
###Integration of antiferromagnetic Heusler compound Ru$_2$MnGe into spintronic devices|Jan Balluff,Teodor Huminiuc,Markus Meinert,Atsufumi Hirohata,Günter Reiss###
(137150, 137153)
Integration of antiferromagnetic Heusler compound Ru2MnGe into spintronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[277.0, 135, '%', 7]

Ru2MnGe
###Integration of antiferromagnetic Heusler compound Ru$_2$MnGe into spintronic devices|Jan Balluff,Teodor Huminiuc,Markus Meinert,Atsufumi Hirohata,Günter Reiss###
(137209, 137212)
 Theantiferromagnet Ru2MnGe is used to pin the magnetization direction of aferromagnetic Fe layer in MgO based thin film tunnelling magnetoresistancestacks.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[218.0, 135, '%', 5]

Fe
###Integration of antiferromagnetic Heusler compound Ru$_2$MnGe into spintronic devices|Jan Balluff,Teodor Huminiuc,Markus Meinert,Atsufumi Hirohata,Günter Reiss###
(137235, 137235)
 Theantiferromagnet Ru2MnGe is used to pin the magnetization direction of aferromagnetic Fe layer in MgO based thin film tunnelling magnetoresistancestacks.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[195.0, 135, '%', 5]

MgO
###Integration of antiferromagnetic Heusler compound Ru$_2$MnGe into spintronic devices|Jan Balluff,Teodor Huminiuc,Markus Meinert,Atsufumi Hirohata,Günter Reiss###
(137241, 137242)
 Theantiferromagnet Ru2MnGe is used to pin the magnetization direction of aferromagnetic Fe layer in MgO based thin film tunnelling magnetoresistancestacks.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 135, '%', 5]

Fe
###Integration of antiferromagnetic Heusler compound Ru$_2$MnGe into spintronic devices|Jan Balluff,Teodor Huminiuc,Markus Meinert,Atsufumi Hirohata,Günter Reiss###
(137380, 137380)
 Using Feas a ferromagnetic electrode material we prepared magnetic tunneling junctionsand measured the magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 135, '%', 1]

Fe
###Integration of antiferromagnetic Heusler compound Ru$_2$MnGe into spintronic devices|Jan Balluff,Teodor Huminiuc,Markus Meinert,Atsufumi Hirohata,Günter Reiss###
(137446, 137446)
 We find a sizeable maximummagnetoresistance value of 135%, which is comparable to other common Fe basedMTJ systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 135, '%', 0]

SrCo0.85Fe0.15O2.62
###Room Temperature Magnetoresistance and Exchange Bias in "314 - type" Oxygen-Vacancy Ordered SrCo$_{0.85}$Fe$_{0.15}$O$_{2.62}$|Prachi Mohanty,Sourav Marik,Deepak Singh,Ravi P. Singh###
(137492, 137498)
Room Temperature Magnetoresistance and Exchange Bias in 314 - type Oxygen-Vacancy Ordered SrCo0.85Fe0.15O2.62.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5670995670995671,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.032467532467532464,0.18398268398268397,0,0,0,0,0,0,0,0,0,0,0.21645021645021645,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 315, 'K', 2],[109.0, 295, 'K', 3],[112.0, 70, 'kOe', 3],[133.0, 4, 'K', 3],[136.0, 70, 'kOe', 3],[153.0, 315, 'K', 4]

SrCo0.85Fe0.15O2.62
###Room Temperature Magnetoresistance and Exchange Bias in "314 - type" Oxygen-Vacancy Ordered SrCo$_{0.85}$Fe$_{0.15}$O$_{2.62}$|Prachi Mohanty,Sourav Marik,Deepak Singh,Ravi P. Singh###
(137548, 137554)
 Herein, we report the magneto-transport and exchange bias effect in a 314 -type oxygen - vacancy ordered material with compositionSrCo0.85Fe0.15O2.62.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5670995670995671,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.032467532467532464,0.18398268398268397,0,0,0,0,0,0,0,0,0,0,0.21645021645021645,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 315, 'K', 1],[53.0, 295, 'K', 2],[56.0, 70, 'kOe', 2],[77.0, 4, 'K', 2],[80.0, 70, 'kOe', 2],[97.0, 315, 'K', 3]

Pt/CoFe2O4
###Magnetic Proximity Effect in Pt/CoFe2O4 Bilayers|Walid Amamou,Igor V. Pinchuk,Amanda Hanks,Robert Williams,Nikolas Antolin,Adam Goad,Dante J. O'Hara,Adam S. Ahmed,Wolfgang Windl,David W. McComb,Roland K. Kawakami###
(137831, 137837)
Magnetic Proximity Effect in Pt/CoFe2O4 Bilayers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[65.0, 5, 'K', 2]

Pt/CoFe2O4
###Magnetic Proximity Effect in Pt/CoFe2O4 Bilayers|Walid Amamou,Igor V. Pinchuk,Amanda Hanks,Robert Williams,Nikolas Antolin,Adam Goad,Dante J. O'Hara,Adam S. Ahmed,Wolfgang Windl,David W. McComb,Roland K. Kawakami###
(137862, 137868)
 We observe the magnetic proximity effect (MPE) in Pt/CoFe2O4 bilayers grownby molecular beam epitaxy.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[34.0, 5, 'K', 1]

Pt
###Magnetic Proximity Effect in Pt/CoFe2O4 Bilayers|Walid Amamou,Igor V. Pinchuk,Amanda Hanks,Robert Williams,Nikolas Antolin,Adam Goad,Dante J. O'Hara,Adam S. Ahmed,Wolfgang Windl,David W. McComb,Roland K. Kawakami###
(137957, 137957)
 spin Hall magnetoresistance) in the Pt layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 5, 'K', 2]

Pt
###Magnetic Proximity Effect in Pt/CoFe2O4 Bilayers|Walid Amamou,Igor V. Pinchuk,Amanda Hanks,Robert Williams,Nikolas Antolin,Adam Goad,Dante J. O'Hara,Adam S. Ahmed,Wolfgang Windl,David W. McComb,Roland K. Kawakami###
(137975, 137975)
 The observation ofinduced ferromagnetism in Pt via AMR is further supported by density functionaltheory calculations and various control measurements including insertion of aCu spacer layer to suppress the induced ferromagnetism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 5, 'K', 3]

Cu
###Magnetic Proximity Effect in Pt/CoFe2O4 Bilayers|Walid Amamou,Igor V. Pinchuk,Amanda Hanks,Robert Williams,Nikolas Antolin,Adam Goad,Dante J. O'Hara,Adam S. Ahmed,Wolfgang Windl,David W. McComb,Roland K. Kawakami###
(138017, 138017)
 The observation ofinduced ferromagnetism in Pt via AMR is further supported by density functionaltheory calculations and various control measurements including insertion of aCu spacer layer to suppress the induced ferromagnetism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 5, 'K', 3]

In
###Magnetic Proximity Effect in Pt/CoFe2O4 Bilayers|Walid Amamou,Igor V. Pinchuk,Amanda Hanks,Robert Williams,Nikolas Antolin,Adam Goad,Dante J. O'Hara,Adam S. Ahmed,Wolfgang Windl,David W. McComb,Roland K. Kawakami###
(138034, 138034)
 In addition, anomalousHall effect measurements show an out-of-plane magnetic hysteresis loop of theinduced ferromagnetic phase with larger coercivity and larger remanence thanthe bulk CoFe2O4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 5, 'K', 4]

CoFe2O4
###Magnetic Proximity Effect in Pt/CoFe2O4 Bilayers|Walid Amamou,Igor V. Pinchuk,Amanda Hanks,Robert Williams,Nikolas Antolin,Adam Goad,Dante J. O'Hara,Adam S. Ahmed,Wolfgang Windl,David W. McComb,Roland K. Kawakami###
(138094, 138098)
 In addition, anomalousHall effect measurements show an out-of-plane magnetic hysteresis loop of theinduced ferromagnetic phase with larger coercivity and larger remanence thanthe bulk CoFe2O4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[192.0, 5, 'K', 4]

Pt/CoFe2O4
###Magnetic Proximity Effect in Pt/CoFe2O4 Bilayers|Walid Amamou,Igor V. Pinchuk,Amanda Hanks,Robert Williams,Nikolas Antolin,Adam Goad,Dante J. O'Hara,Adam S. Ahmed,Wolfgang Windl,David W. McComb,Roland K. Kawakami###
(138111, 138117)
 By demonstrating MPE in Pt/CoFe2O4, these results establishthe spinel ferrite family as a promising material for MPE and spin manipulationvia proximity exchange fields.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[209.0, 5, 'K', 5]

PH
###Current jetting distorted planar Hall effect in a Weyl semimetal with ultrahigh mobility|J. Yang,W. L. Zhen,D. D. Liang,Y. J. Wang,X. Yan,S. R. Weng,J. R. Wang,W. Tong,L. Pi,W. K. Zhu,C. J. Zhang###
(138211, 138212)
 A giant planar Hall effect (PHE) and anisotropic magnetoresistance (AMR) isobserved in TaP, a nonmagnetic Weyl semimetal with ultrahigh mobility.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TaP
###Current jetting distorted planar Hall effect in a Weyl semimetal with ultrahigh mobility|J. Yang,W. L. Zhen,D. D. Liang,Y. J. Wang,X. Yan,S. R. Weng,J. R. Wang,W. Tong,L. Pi,W. K. Zhu,C. J. Zhang###
(138235, 138236)
 A giant planar Hall effect (PHE) and anisotropic magnetoresistance (AMR) isobserved in TaP, a nonmagnetic Weyl semimetal with ultrahigh mobility.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PH
###Current jetting distorted planar Hall effect in a Weyl semimetal with ultrahigh mobility|J. Yang,W. L. Zhen,D. D. Liang,Y. J. Wang,X. Yan,S. R. Weng,J. R. Wang,W. Tong,L. Pi,W. K. Zhu,C. J. Zhang###
(138329, 138330)
 The giant PHE<missing VAR>/AMRis finally attributed to the large anisotropic orbital magnetoresistance thatstems from the ultrahigh mobility.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PH
###Current jetting distorted planar Hall effect in a Weyl semimetal with ultrahigh mobility|J. Yang,W. L. Zhen,D. D. Liang,Y. J. Wang,X. Yan,S. R. Weng,J. R. Wang,W. Tong,L. Pi,W. K. Zhu,C. J. Zhang###
(138444, 138445)
 Although the giant PHE<missing VAR>/AMR suggests promising applications inspintronics, the enhanced current jetting shows the other side of the coin,which needs to be considered in the future device design.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt/Co
###Spin-current-related magnetoresistance in epitaxial Pt/Co bilayers in the presence of spin Hall effect and Rashba-Edelstein effect|Ye Du,Saburo Takahashi,Junsaku Nitta###
(138529, 138531)
Spin-current-related magnetoresistance in epitaxial Pt/Co bilayers in the presence of spin Hall effect and Rashba-Edelstein effect.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[139.0, 1, 'e', 2]

Pt/Co
###Spin-current-related magnetoresistance in epitaxial Pt/Co bilayers in the presence of spin Hall effect and Rashba-Edelstein effect|Ye Du,Saburo Takahashi,Junsaku Nitta###
(138581, 138583)
 We analyze the experimentally obtained spin-current-related magnetoresistancein epitaxial Pt/Co bilayers by using a drift-diffusion model that incorporatesboth bulk spin Hall effect and interfacial Rashba-Edelstein effect (REE).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[87.0, 1, 'e', 1]

Pt/Co
###Spin-current-related magnetoresistance in epitaxial Pt/Co bilayers in the presence of spin Hall effect and Rashba-Edelstein effect|Ye Du,Saburo Takahashi,Junsaku Nitta###
(138645, 138647)
 Themagnetoresistance analysis yields, for the Pt/Co interface, atemperature-independent Rashba parameter in the order of 1e-11 e<missing VAR>V m<missing VAR> that agreeswith theoretical calculations, along with an effective interfacial REEthickness of several angstroms which is in overall consistency with ourprevious spin-orbit torque analysis.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[23.0, 1, 'e', 0]

V
###Spin-current-related magnetoresistance in epitaxial Pt/Co bilayers in the presence of spin Hall effect and Rashba-Edelstein effect|Ye Du,Saburo Takahashi,Junsaku Nitta###
(138675, 138675)
 Themagnetoresistance analysis yields, for the Pt/Co interface, atemperature-independent Rashba parameter in the order of 1e-11 e<missing VAR>V m<missing VAR> that agreeswith theoretical calculations, along with an effective interfacial REEthickness of several angstroms which is in overall consistency with ourprevious spin-orbit torque analysis.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 1, 'e', 0]

In
###Spin-current-related magnetoresistance in epitaxial Pt/Co bilayers in the presence of spin Hall effect and Rashba-Edelstein effect|Ye Du,Saburo Takahashi,Junsaku Nitta###
(138740, 138740)
 In particular, our results suggest thatboth bulk and interface charge-spin current inter-conversions need to be takeninto account for the spin-current-related magnetoresistance analysis inhighly-conductive magnetic hetero-structures such as the epitaxial Pt/Cobilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 1, 'e', 1]

Pt/Co
###Spin-current-related magnetoresistance in epitaxial Pt/Co bilayers in the presence of spin Hall effect and Rashba-Edelstein effect|Ye Du,Saburo Takahashi,Junsaku Nitta###
(138820, 138822)
 In particular, our results suggest thatboth bulk and interface charge-spin current inter-conversions need to be takeninto account for the spin-current-related magnetoresistance analysis inhighly-conductive magnetic hetero-structures such as the epitaxial Pt/Cobilayers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[150.0, 1, 'e', 1]

Ga
###Focused ion beam modification of non-local magnon-based transport in yttrium iron garnet/platinum heterostructures|Richard Schlitz,Toni Helm,Michaela Lammel,Kornelius Nielsch,Artur Erbe,Sebastian T. B. Goennenwein###
(138879, 138879)
 We study the impact of Ga ion exposure on the local and non-localmagnetotransport response in heterostructures of the ferrimagnetic insulatoryttrium iron garnet and platinum.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Focused ion beam modification of non-local magnon-based transport in yttrium iron garnet/platinum heterostructures|Richard Schlitz,Toni Helm,Michaela Lammel,Kornelius Nielsch,Artur Erbe,Sebastian T. B. Goennenwein###
(138926, 138926)
 In particular, we cut the yttrium iron garnetlayer in between two electrically separated wires of platinum using a Ga ionbeam, and study the ensuing changes in the magnetoresistive response.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###Focused ion beam modification of non-local magnon-based transport in yttrium iron garnet/platinum heterostructures|Richard Schlitz,Toni Helm,Michaela Lammel,Kornelius Nielsch,Artur Erbe,Sebastian T. B. Goennenwein###
(138966, 138966)
 In particular, we cut the yttrium iron garnetlayer in between two electrically separated wires of platinum using a Ga ionbeam, and study the ensuing changes in the magnetoresistive response.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Focused ion beam modification of non-local magnon-based transport in yttrium iron garnet/platinum heterostructures|Richard Schlitz,Toni Helm,Michaela Lammel,Kornelius Nielsch,Artur Erbe,Sebastian T. B. Goennenwein###
(139029, 139029)
 We findthat the non-local magnetoresistance signal vanishes when the yttrium irongarnet film between the Pt wires is fully cut, although the local spin Hallmagnetoresistance signal remains finite.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co/Mo
###Structural, magnetostatic and magnetodynamic studies of Co/Mo-based uncompensated synthetic antiferromagnets|Piotr Ogrodnik,Jarosław Kanak,Maciej Czapkiewicz,Sławomir Ziętek,Aleksiej Pietruczik,Krzysztof Morawiec,Piotr Dłużewski,Krzysztof Dybko,Andrzej Wawro,Tomasz Stobiecki###
(139136, 139138)
Structural, magnetostatic and magnetodynamic studies of Co/Mo-based uncompensated synthetic antiferromagnets.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

In
###Structural, magnetostatic and magnetodynamic studies of Co/Mo-based uncompensated synthetic antiferromagnets|Piotr Ogrodnik,Jarosław Kanak,Maciej Czapkiewicz,Sławomir Ziętek,Aleksiej Pietruczik,Krzysztof Morawiec,Piotr Dłużewski,Krzysztof Dybko,Andrzej Wawro,Tomasz Stobiecki###
(139149, 139149)
 In this work, we comprehensively investigate and discuss the structural,magnetostatic, dynamic, and magnetoresistive properties of epitaxial Co/Mosuperlattices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co/Mo
###Structural, magnetostatic and magnetodynamic studies of Co/Mo-based uncompensated synthetic antiferromagnets|Piotr Ogrodnik,Jarosław Kanak,Maciej Czapkiewicz,Sławomir Ziętek,Aleksiej Pietruczik,Krzysztof Morawiec,Piotr Dłużewski,Krzysztof Dybko,Andrzej Wawro,Tomasz Stobiecki###
(139188, 139190)
 In this work, we comprehensively investigate and discuss the structural,magnetostatic, dynamic, and magnetoresistive properties of epitaxial Co/Mosuperlattices.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Co
###Structural, magnetostatic and magnetodynamic studies of Co/Mo-based uncompensated synthetic antiferromagnets|Piotr Ogrodnik,Jarosław Kanak,Maciej Czapkiewicz,Sławomir Ziętek,Aleksiej Pietruczik,Krzysztof Morawiec,Piotr Dłużewski,Krzysztof Dybko,Andrzej Wawro,Tomasz Stobiecki###
(139204, 139204)
 The magnetization of the Co sublayers is coupledantiferromagnetically with a strength that depends on the thickness of thenonmagnetic Mo spacer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mo
###Structural, magnetostatic and magnetodynamic studies of Co/Mo-based uncompensated synthetic antiferromagnets|Piotr Ogrodnik,Jarosław Kanak,Maciej Czapkiewicz,Sławomir Ziętek,Aleksiej Pietruczik,Krzysztof Morawiec,Piotr Dłużewski,Krzysztof Dybko,Andrzej Wawro,Tomasz Stobiecki###
(139238, 139238)
 The magnetization of the Co sublayers is coupledantiferromagnetically with a strength that depends on the thickness of thenonmagnetic Mo spacer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Structural, magnetostatic and magnetodynamic studies of Co/Mo-based uncompensated synthetic antiferromagnets|Piotr Ogrodnik,Jarosław Kanak,Maciej Czapkiewicz,Sławomir Ziętek,Aleksiej Pietruczik,Krzysztof Morawiec,Piotr Dłużewski,Krzysztof Dybko,Andrzej Wawro,Tomasz Stobiecki###
(139289, 139289)
 The magnetization and magnetoresistance hysteresis loopsclearly reflect interlayer exchange coupling and the occurrence of uniaxialmagnetic anisotropy induced by the strained Co sublayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mo
###Structural, magnetostatic and magnetodynamic studies of Co/Mo-based uncompensated synthetic antiferromagnets|Piotr Ogrodnik,Jarosław Kanak,Maciej Czapkiewicz,Sławomir Ziętek,Aleksiej Pietruczik,Krzysztof Morawiec,Piotr Dłużewski,Krzysztof Dybko,Andrzej Wawro,Tomasz Stobiecki###
(139374, 139374)
 The Mo spacer thickness as afunction of the interlayer magnetic coupling is determined as a fittingparameter by modeling the experimental results.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr4Fe3CoO11
###Magnetization reversal, giant exchange bias effect and magnetoresistance in oxygen vacancy ordered Sr$_{4}$Fe$_{3}$CoO$_{11}$|Prachi Mohanty,Sourav Marik,C. Madhu,D. Singh,O. Toulemonde,Ravi P. Singh###
(139454, 139460)
Magnetization reversal, giant exchange bias effect and magnetoresistance in oxygen vacancy ordered Sr4Fe3CoO11.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5789473684210527,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15789473684210525,0.05263157894736842,0,0,0,0,0,0,0,0,0,0,0.21052631578947367,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 255, 'K', 3],[99.0, 47, 'K', 4],[104.0, 100, 'Oe', 4],[165.0, 100, 'K', 6],[182.0, 25, 'K', 7],[185.0, 7, 'T', 7]

Sr4Fe3CoO11
###Magnetization reversal, giant exchange bias effect and magnetoresistance in oxygen vacancy ordered Sr$_{4}$Fe$_{3}$CoO$_{11}$|Prachi Mohanty,Sourav Marik,C. Madhu,D. Singh,O. Toulemonde,Ravi P. Singh###
(139488, 139494)
 We report the structural, magnetic, exchange bias and magnetotransport effectin Sr4Fe3CoO11.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5789473684210527,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15789473684210525,0.05263157894736842,0,0,0,0,0,0,0,0,0,0,0.21052631578947367,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 255, 'K', 2],[65.0, 47, 'K', 3],[70.0, 100, 'Oe', 3],[131.0, 100, 'K', 5],[148.0, 25, 'K', 6],[151.0, 7, 'T', 6]

N
###Magnetization reversal, giant exchange bias effect and magnetoresistance in oxygen vacancy ordered Sr$_{4}$Fe$_{3}$CoO$_{11}$|Prachi Mohanty,Sourav Marik,C. Madhu,D. Singh,O. Toulemonde,Ravi P. Singh###
(139535, 139535)
 It shows antiferromagnetic (G<missing VAR>-type) transition(T<missing VAR>N  255 K) along with interesting temperature induced magnetizationreversal (T<missing VAR>Comp.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 255, 'K', 0],[24.0, 47, 'K', 1],[29.0, 100, 'Oe', 1],[90.0, 100, 'K', 3],[107.0, 25, 'K', 4],[110.0, 7, 'T', 4]

Co
###Magnetization reversal, giant exchange bias effect and magnetoresistance in oxygen vacancy ordered Sr$_{4}$Fe$_{3}$CoO$_{11}$|Prachi Mohanty,Sourav Marik,C. Madhu,D. Singh,O. Toulemonde,Ravi P. Singh###
(139593, 139593)
 The magnetic reversal can beelucidated considering the increased magnetocrystalline anisotropy with Cosubstitution.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 255, 'K', 2],[34.0, 47, 'K', 1],[29.0, 100, 'Oe', 1],[32.0, 100, 'K', 1],[49.0, 25, 'K', 2],[52.0, 7, 'T', 2]

N
###Magnetization reversal, giant exchange bias effect and magnetoresistance in oxygen vacancy ordered Sr$_{4}$Fe$_{3}$CoO$_{11}$|Prachi Mohanty,Sourav Marik,C. Madhu,D. Singh,O. Toulemonde,Ravi P. Singh###
(139668, 139668)
 Giant exchange bias effect isobserved below T<missing VAR>N under field cooling condition.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 255, 'K', 5],[109.0, 47, 'K', 4],[104.0, 100, 'Oe', 4],[43.0, 100, 'K', 2],[26.0, 25, 'K', 1],[23.0, 7, 'T', 1]

Mn2Au
###Magnetoresistance effects in the metallic antiferromagnet Mn$_2$Au|S. Yu. Bodnar,Y. Skourski,O. Gomonay,J. Sinova,M. Kläui,M. Jourdan###
(139742, 139744)
Magnetoresistance effects in the metallic antiferromagnet Mn2Au.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 60, 'T', 3]

In
###Magnetoresistance effects in the metallic antiferromagnet Mn$_2$Au|S. Yu. Bodnar,Y. Skourski,O. Gomonay,J. Sinova,M. Kläui,M. Jourdan###
(139747, 139747)
 In antiferromagnetic spintronics, it is essential to separate the resistancemodifications of purely magnetic origin from other effects generated by currentpulses intended to switch the Neel vector.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 60, 'T', 2]

N
###Magnetoresistance effects in the metallic antiferromagnet Mn$_2$Au|S. Yu. Bodnar,Y. Skourski,O. Gomonay,J. Sinova,M. Kläui,M. Jourdan###
(139802, 139802)
 In antiferromagnetic spintronics, it is essential to separate the resistancemodifications of purely magnetic origin from other effects generated by currentpulses intended to switch the Neel vector.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 60, 'T', 2]

In
###Magnetoresistance effects in the metallic antiferromagnet Mn$_2$Au|S. Yu. Bodnar,Y. Skourski,O. Gomonay,J. Sinova,M. Kläui,M. Jourdan###
(139966, 139966)
 In the case of a forced alignment of the staggeredmagnetization parallel to the hard [100]-direction, evidence for a largeranisotropic magnetoresistance effect was found.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 60, 'T', 2]

B
###Crossover from Positive to Negative Interlayer Magnetoresistance in Multilayer Massless Dirac Fermion System with Non-Vertical Interlayer Tunneling|Takao Morinari,Takami Tohyama###
(140173, 140173)
 We present a theoretical description of the interlayer magnetoresistance inthe layered Dirac fermion system with the application to the organic conductoralpha-(BEDT-TTF)2I3 under pressure.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Crossover from Positive to Negative Interlayer Magnetoresistance in Multilayer Massless Dirac Fermion System with Non-Vertical Interlayer Tunneling|Takao Morinari,Takami Tohyama###
(140180, 140180)
 We present a theoretical description of the interlayer magnetoresistance inthe layered Dirac fermion system with the application to the organic conductoralpha-(BEDT-TTF)2I3 under pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I3
###Crossover from Positive to Negative Interlayer Magnetoresistance in Multilayer Massless Dirac Fermion System with Non-Vertical Interlayer Tunneling|Takao Morinari,Takami Tohyama###
(140183, 140184)
 We present a theoretical description of the interlayer magnetoresistance inthe layered Dirac fermion system with the application to the organic conductoralpha-(BEDT-TTF)2I3 under pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Sign reversal of magnetoresistance and p to n transition in Ni doped ZnO thin film|Arpana Agrawal,Tanveer A. Darb,R. J. Choudhary,Archana Lakhani,Pranay K. Sen,Pratima Sen###
(140763, 140763)
Sign reversal of magnetoresistance and p<missing VAR> to n<missing VAR> transition in Ni doped ZnO thin film.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 50, 'K', 4],[213.0, 50, 'K', 4]

ZnO
###Sign reversal of magnetoresistance and p to n transition in Ni doped ZnO thin film|Arpana Agrawal,Tanveer A. Darb,R. J. Choudhary,Archana Lakhani,Pranay K. Sen,Pratima Sen###
(140767, 140768)
Sign reversal of magnetoresistance and p<missing VAR> to n<missing VAR> transition in Ni doped ZnO thin film.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[174.0, 50, 'K', 4],[208.0, 50, 'K', 4]

Ni0.07Zn0.93O
###Sign reversal of magnetoresistance and p to n transition in Ni doped ZnO thin film|Arpana Agrawal,Tanveer A. Darb,R. J. Choudhary,Archana Lakhani,Pranay K. Sen,Pratima Sen###
(140812, 140816)
 We report the magnetoresistance and nonlinear Hall effect studies over a widetemperature range in pulsed laser deposited Ni0.07Zn0.93O thin film.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.035,0,0.465,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 50, 'K', 3],[160.0, 50, 'K', 3]

Ni
###Sign reversal of magnetoresistance and p to n transition in Ni doped ZnO thin film|Arpana Agrawal,Tanveer A. Darb,R. J. Choudhary,Archana Lakhani,Pranay K. Sen,Pratima Sen###
(141041, 141041)
Crossover in the sign of magnetoresistance from negative to positive revealsthe spin polarization of the charge carriers and hence the applicability of Nidoped ZnO thin film for spintronic applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 50, 'K', 1],[65.0, 50, 'K', 1]

ZnO
###Sign reversal of magnetoresistance and p to n transition in Ni doped ZnO thin film|Arpana Agrawal,Tanveer A. Darb,R. J. Choudhary,Archana Lakhani,Pranay K. Sen,Pratima Sen###
(141046, 141047)
Crossover in the sign of magnetoresistance from negative to positive revealsthe spin polarization of the charge carriers and hence the applicability of Nidoped ZnO thin film for spintronic applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 50, 'K', 1],[70.0, 50, 'K', 1]

US
###Thickness dependence of unidirectional spin-Hall magnetoresistance in metallic bilayers|Yuxiang Yin,Dong-Soo Han,Mark C. H. de Jong,Reinoud Lavrijsen,Rembert A. Duine,Henk J. M. Swagten,Bert Koopmans###
(141159, 141160)
 To study the fundamentalmechanism of the USMR, both ferromagnetic and heavy metallic layer thicknessdependence of the USMR are presented in a Pt/Co/AlOx trilayer at roomtemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

US
###Thickness dependence of unidirectional spin-Hall magnetoresistance in metallic bilayers|Yuxiang Yin,Dong-Soo Han,Mark C. H. de Jong,Reinoud Lavrijsen,Rembert A. Duine,Henk J. M. Swagten,Bert Koopmans###
(141186, 141187)
 To study the fundamentalmechanism of the USMR, both ferromagnetic and heavy metallic layer thicknessdependence of the USMR are presented in a Pt/Co/AlOx trilayer at roomtemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt/Co/Al
###Thickness dependence of unidirectional spin-Hall magnetoresistance in metallic bilayers|Yuxiang Yin,Dong-Soo Han,Mark C. H. de Jong,Reinoud Lavrijsen,Rembert A. Duine,Henk J. M. Swagten,Bert Koopmans###
(141199, 141203)
 To study the fundamentalmechanism of the USMR, both ferromagnetic and heavy metallic layer thicknessdependence of the USMR are presented in a Pt/Co/AlOx trilayer at roomtemperature.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Co
###Thickness dependence of unidirectional spin-Hall magnetoresistance in metallic bilayers|Yuxiang Yin,Dong-Soo Han,Mark C. H. de Jong,Reinoud Lavrijsen,Rembert A. Duine,Henk J. M. Swagten,Bert Koopmans###
(141309, 141309)
 The experimental results are fitted by using adrift-diffusion theory, with parameters extracted from an analysis oflongitudinal resistivity of the Co layer within the framework of theFuchs-Sondheimer model.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

US
###Thickness dependence of unidirectional spin-Hall magnetoresistance in metallic bilayers|Yuxiang Yin,Dong-Soo Han,Mark C. H. de Jong,Reinoud Lavrijsen,Rembert A. Duine,Henk J. M. Swagten,Bert Koopmans###
(141355, 141356)
 A good agreement with the theory is found,demonstrating that the USMR is governed by both the spin-Hall effect in theheavy metallic layer and the metallic diffusion process in the ferromagneticlayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nd2-x
###Magnetotransport evidence of irreversible spin reorientation in the collinear antiferromagnetic state of underdoped $\mathrm{Nd}_{2-x}\mathrm{Ce}_x\mathrm{CuO}_4$|Alma Dorantes,Ahmed Alshemi,Zengle Huang,Andreas Erb,Toni Helm,Mark Kartsovnik###
(141442, 141445)
Magnetotransport evidence of irreversible spin reorientation in the collinear antiferromagnetic state of underdoped mathrmNd2-xmathrmCex<missing VAR>mathrmCuO4.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[120.0, 0.05, ',', 2],[128.0, 0.115, ',', 2],[137.0, 0.12, ',', 2],[145.0, 0.13, ',', 2]

Ce
###Magnetotransport evidence of irreversible spin reorientation in the collinear antiferromagnetic state of underdoped $\mathrm{Nd}_{2-x}\mathrm{Ce}_x\mathrm{CuO}_4$|Alma Dorantes,Ahmed Alshemi,Zengle Huang,Andreas Erb,Toni Helm,Mark Kartsovnik###
(141447, 141447)
Magnetotransport evidence of irreversible spin reorientation in the collinear antiferromagnetic state of underdoped mathrmNd2-xmathrmCex<missing VAR>mathrmCuO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 0.05, ',', 2],[126.0, 0.115, ',', 2],[135.0, 0.12, ',', 2],[143.0, 0.13, ',', 2]

CuO4
###Magnetotransport evidence of irreversible spin reorientation in the collinear antiferromagnetic state of underdoped $\mathrm{Nd}_{2-x}\mathrm{Ce}_x\mathrm{CuO}_4$|Alma Dorantes,Ahmed Alshemi,Zengle Huang,Andreas Erb,Toni Helm,Mark Kartsovnik###
(141450, 141452)
Magnetotransport evidence of irreversible spin reorientation in the collinear antiferromagnetic state of underdoped mathrmNd2-xmathrmCex<missing VAR>mathrmCuO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 0.05, ',', 2],[121.0, 0.115, ',', 2],[130.0, 0.12, ',', 2],[138.0, 0.13, ',', 2]

Nd2-x
###Magnetotransport evidence of irreversible spin reorientation in the collinear antiferromagnetic state of underdoped $\mathrm{Nd}_{2-x}\mathrm{Ce}_x\mathrm{CuO}_4$|Alma Dorantes,Ahmed Alshemi,Zengle Huang,Andreas Erb,Toni Helm,Mark Kartsovnik###
(141485, 141488)
 We make use of the strong spin-charge coupling in the electron-doped cupratemathrmNd2-xmathrmCex<missing VAR>mathrmCuO4 to probe changes in its spinsystem via magnetotransport measurements.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[77.0, 0.05, ',', 1],[85.0, 0.115, ',', 1],[94.0, 0.12, ',', 1],[102.0, 0.13, ',', 1]

Ce
###Magnetotransport evidence of irreversible spin reorientation in the collinear antiferromagnetic state of underdoped $\mathrm{Nd}_{2-x}\mathrm{Ce}_x\mathrm{CuO}_4$|Alma Dorantes,Ahmed Alshemi,Zengle Huang,Andreas Erb,Toni Helm,Mark Kartsovnik###
(141490, 141490)
 We make use of the strong spin-charge coupling in the electron-doped cupratemathrmNd2-xmathrmCex<missing VAR>mathrmCuO4 to probe changes in its spinsystem via magnetotransport measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 0.05, ',', 1],[83.0, 0.115, ',', 1],[92.0, 0.12, ',', 1],[100.0, 0.13, ',', 1]

CuO4
###Magnetotransport evidence of irreversible spin reorientation in the collinear antiferromagnetic state of underdoped $\mathrm{Nd}_{2-x}\mathrm{Ce}_x\mathrm{CuO}_4$|Alma Dorantes,Ahmed Alshemi,Zengle Huang,Andreas Erb,Toni Helm,Mark Kartsovnik###
(141493, 141495)
 We make use of the strong spin-charge coupling in the electron-doped cupratemathrmNd2-xmathrmCex<missing VAR>mathrmCuO4 to probe changes in its spinsystem via magnetotransport measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 0.05, ',', 1],[78.0, 0.115, ',', 1],[87.0, 0.12, ',', 1],[95.0, 0.13, ',', 1]

CuO2
###Magnetotransport evidence of irreversible spin reorientation in the collinear antiferromagnetic state of underdoped $\mathrm{Nd}_{2-x}\mathrm{Ce}_x\mathrm{CuO}_4$|Alma Dorantes,Ahmed Alshemi,Zengle Huang,Andreas Erb,Toni Helm,Mark Kartsovnik###
(141636, 141638)
 Special focus is puton the dependence of the magnetoresistance on the field orientation in theplane of the CuO2 layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 0.05, ',', 1],[63.0, 0.115, ',', 1],[54.0, 0.12, ',', 1],[46.0, 0.13, ',', 1]

In
###Magnetotransport evidence of irreversible spin reorientation in the collinear antiferromagnetic state of underdoped $\mathrm{Nd}_{2-x}\mathrm{Ce}_x\mathrm{CuO}_4$|Alma Dorantes,Ahmed Alshemi,Zengle Huang,Andreas Erb,Toni Helm,Mark Kartsovnik###
(141643, 141643)
 In addition to the kink at the field-inducedtransition between the noncollinear and collinear antiferromagneticconfigurations, a sharp irreversible feature is found in the angle-dependentmagnetoresistance of all samples in the high-field regime, at fieldorientations around the Cu--O--Cu direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 0.05, ',', 2],[70.0, 0.115, ',', 2],[61.0, 0.12, ',', 2],[53.0, 0.13, ',', 2]

Cu
###Magnetotransport evidence of irreversible spin reorientation in the collinear antiferromagnetic state of underdoped $\mathrm{Nd}_{2-x}\mathrm{Ce}_x\mathrm{CuO}_4$|Alma Dorantes,Ahmed Alshemi,Zengle Huang,Andreas Erb,Toni Helm,Mark Kartsovnik###
(141731, 141731)
 In addition to the kink at the field-inducedtransition between the noncollinear and collinear antiferromagneticconfigurations, a sharp irreversible feature is found in the angle-dependentmagnetoresistance of all samples in the high-field regime, at fieldorientations around the Cu--O--Cu direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 0.05, ',', 2],[158.0, 0.115, ',', 2],[149.0, 0.12, ',', 2],[141.0, 0.13, ',', 2]

O
###Magnetotransport evidence of irreversible spin reorientation in the collinear antiferromagnetic state of underdoped $\mathrm{Nd}_{2-x}\mathrm{Ce}_x\mathrm{CuO}_4$|Alma Dorantes,Ahmed Alshemi,Zengle Huang,Andreas Erb,Toni Helm,Mark Kartsovnik###
(141734, 141734)
 In addition to the kink at the field-inducedtransition between the noncollinear and collinear antiferromagneticconfigurations, a sharp irreversible feature is found in the angle-dependentmagnetoresistance of all samples in the high-field regime, at fieldorientations around the Cu--O--Cu direction.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 0.05, ',', 2],[161.0, 0.115, ',', 2],[152.0, 0.12, ',', 2],[144.0, 0.13, ',', 2]

Cu
###Magnetotransport evidence of irreversible spin reorientation in the collinear antiferromagnetic state of underdoped $\mathrm{Nd}_{2-x}\mathrm{Ce}_x\mathrm{CuO}_4$|Alma Dorantes,Ahmed Alshemi,Zengle Huang,Andreas Erb,Toni Helm,Mark Kartsovnik###
(141737, 141737)
 In addition to the kink at the field-inducedtransition between the noncollinear and collinear antiferromagneticconfigurations, a sharp irreversible feature is found in the angle-dependentmagnetoresistance of all samples in the high-field regime, at fieldorientations around the Cu--O--Cu direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[172.0, 0.05, ',', 2],[164.0, 0.115, ',', 2],[155.0, 0.12, ',', 2],[147.0, 0.13, ',', 2]

Cu2
###Magnetotransport evidence of irreversible spin reorientation in the collinear antiferromagnetic state of underdoped $\mathrm{Nd}_{2-x}\mathrm{Ce}_x\mathrm{CuO}_4$|Alma Dorantes,Ahmed Alshemi,Zengle Huang,Andreas Erb,Toni Helm,Mark Kartsovnik###
(141769, 141770)
 The obtained behavior can beexplained in terms of field-induced reorientation of Cu2 spins within thecollinear antiferromagnetic state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[204.0, 0.05, ',', 3],[196.0, 0.115, ',', 3],[187.0, 0.12, ',', 3],[179.0, 0.13, ',', 3]

At
###Theory of bilinear magneto-electric resistance from topological-insulator surface states|Steven S. -L. Zhang,Giovanni Vignale###
(141890, 141890)
 At variance with theunidirectional magnetoresistance (UMR) effect in magnetic bilayers, thisnonlinear magnetoresistance does not rely on a conducting ferromagnetic layerand scales linearly with both the applied electric and magnetic fields; forthis reason, we name it bilinear magneto-electric resistance (BMER).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

U
###Theory of bilinear magneto-electric resistance from topological-insulator surface states|Steven S. -L. Zhang,Giovanni Vignale###
(141904, 141904)
 At variance with theunidirectional magnetoresistance (UMR) effect in magnetic bilayers, thisnonlinear magnetoresistance does not rely on a conducting ferromagnetic layerand scales linearly with both the applied electric and magnetic fields; forthis reason, we name it bilinear magneto-electric resistance (BMER).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Theory of bilinear magneto-electric resistance from topological-insulator surface states|Steven S. -L. Zhang,Giovanni Vignale###
(141988, 141988)
 At variance with theunidirectional magnetoresistance (UMR) effect in magnetic bilayers, thisnonlinear magnetoresistance does not rely on a conducting ferromagnetic layerand scales linearly with both the applied electric and magnetic fields; forthis reason, we name it bilinear magneto-electric resistance (BMER).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Theory of bilinear magneto-electric resistance from topological-insulator surface states|Steven S. -L. Zhang,Giovanni Vignale###
(142016, 142016)
 We showthat the sign and the magnitude of the BMER depends sensitively on theorientation of the current with respect to the magnetic field as well as thecrystallographic axes -- a property that can be utilized to map out the spintexture of the topological surface states via simple transport measurement,alternative to the angle-resolved photoemission spectroscopy (ARPES).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Theory of bilinear magneto-electric resistance from topological-insulator surface states|Steven S. -L. Zhang,Giovanni Vignale###
(142130, 142130)
 We showthat the sign and the magnitude of the BMER depends sensitively on theorientation of the current with respect to the magnetic field as well as thecrystallographic axes -- a property that can be utilized to map out the spintexture of the topological surface states via simple transport measurement,alternative to the angle-resolved photoemission spectroscopy (ARPES).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###Magnetoresistance of individual ferromagnetic GaAs/(Ga,Mn)As core-shell nanowires|Christian H. Butschkow,Elisabeth Reiger,Stefan Geißler,Andreas Rudolph,Marcello Soda,Dieter Schuh,Georg Woltersdorf,Werner Wegscheider,Dieter Weiss###
(142154, 142154)
Magnetoresistance of individual ferromagnetic GaAs/(Ga,Mn)As core-shell nanowires.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[228.0, 5, 'times', 4]

Mn
###Magnetoresistance of individual ferromagnetic GaAs/(Ga,Mn)As core-shell nanowires|Christian H. Butschkow,Elisabeth Reiger,Stefan Geißler,Andreas Rudolph,Marcello Soda,Dieter Schuh,Georg Woltersdorf,Werner Wegscheider,Dieter Weiss###
(142156, 142156)
Magnetoresistance of individual ferromagnetic GaAs/(Ga,Mn)As core-shell nanowires.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[226.0, 5, 'times', 4]

As
###Magnetoresistance of individual ferromagnetic GaAs/(Ga,Mn)As core-shell nanowires|Christian H. Butschkow,Elisabeth Reiger,Stefan Geißler,Andreas Rudolph,Marcello Soda,Dieter Schuh,Georg Woltersdorf,Werner Wegscheider,Dieter Weiss###
(142158, 142158)
Magnetoresistance of individual ferromagnetic GaAs/(Ga,Mn)As core-shell nanowires.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[224.0, 5, 'times', 4]

Ga
###Magnetoresistance of individual ferromagnetic GaAs/(Ga,Mn)As core-shell nanowires|Christian H. Butschkow,Elisabeth Reiger,Stefan Geißler,Andreas Rudolph,Marcello Soda,Dieter Schuh,Georg Woltersdorf,Werner Wegscheider,Dieter Weiss###
(142201, 142201)
 We investigate, angle dependent, the magnetoresistance (MR) of individualself-assembled ferromagnetic GaAs/(Ga,Mn)As core-shell nanowires at cryogenictemperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 5, 'times', 3]

Mn
###Magnetoresistance of individual ferromagnetic GaAs/(Ga,Mn)As core-shell nanowires|Christian H. Butschkow,Elisabeth Reiger,Stefan Geißler,Andreas Rudolph,Marcello Soda,Dieter Schuh,Georg Woltersdorf,Werner Wegscheider,Dieter Weiss###
(142203, 142203)
 We investigate, angle dependent, the magnetoresistance (MR) of individualself-assembled ferromagnetic GaAs/(Ga,Mn)As core-shell nanowires at cryogenictemperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 5, 'times', 3]

As
###Magnetoresistance of individual ferromagnetic GaAs/(Ga,Mn)As core-shell nanowires|Christian H. Butschkow,Elisabeth Reiger,Stefan Geißler,Andreas Rudolph,Marcello Soda,Dieter Schuh,Georg Woltersdorf,Werner Wegscheider,Dieter Weiss###
(142205, 142205)
 We investigate, angle dependent, the magnetoresistance (MR) of individualself-assembled ferromagnetic GaAs/(Ga,Mn)As core-shell nanowires at cryogenictemperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[177.0, 5, 'times', 3]

Ga
###Magnetoresistance of individual ferromagnetic GaAs/(Ga,Mn)As core-shell nanowires|Christian H. Butschkow,Elisabeth Reiger,Stefan Geißler,Andreas Rudolph,Marcello Soda,Dieter Schuh,Georg Woltersdorf,Werner Wegscheider,Dieter Weiss###
(142407, 142407)
 The nanowires weinvestigate exhibit a uniaxial anisotropy which is approximately 5 times largerthan the strain induced anisotropy observed in lithographically prepared(Ga,Mn)As stripes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 5, 'times', 0]

Mn
###Magnetoresistance of individual ferromagnetic GaAs/(Ga,Mn)As core-shell nanowires|Christian H. Butschkow,Elisabeth Reiger,Stefan Geißler,Andreas Rudolph,Marcello Soda,Dieter Schuh,Georg Woltersdorf,Werner Wegscheider,Dieter Weiss###
(142409, 142409)
 The nanowires weinvestigate exhibit a uniaxial anisotropy which is approximately 5 times largerthan the strain induced anisotropy observed in lithographically prepared(Ga,Mn)As stripes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 5, 'times', 0]

As
###Magnetoresistance of individual ferromagnetic GaAs/(Ga,Mn)As core-shell nanowires|Christian H. Butschkow,Elisabeth Reiger,Stefan Geißler,Andreas Rudolph,Marcello Soda,Dieter Schuh,Georg Woltersdorf,Werner Wegscheider,Dieter Weiss###
(142411, 142411)
 The nanowires weinvestigate exhibit a uniaxial anisotropy which is approximately 5 times largerthan the strain induced anisotropy observed in lithographically prepared(Ga,Mn)As stripes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 5, 'times', 0]

FeSb2
###Low-temperature magnetotransport of narrow-gap semiconductor FeSb2|H. Takahashi,R. Okazaki,Y. Yasui,I. Terasaki###
(142438, 142440)
Low-temperature magnetotransport of narrow-gap semiconductor FeSb2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 1, 'down', 3],[147.0, 2000, 'to', 3],[148.0, 28000, 'cm', 3],[161.0, 30, 'down', 3],[164.0, 4, 'K', 3],[199.0, 3, 'K', 4]

FeSb2
###Low-temperature magnetotransport of narrow-gap semiconductor FeSb2|H. Takahashi,R. Okazaki,Y. Yasui,I. Terasaki###
(142474, 142476)
 We present a study of the magnetoresistance and Hall effect in the narrow-gapsemiconductor FeSb2 at low temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 1, 'down', 2],[111.0, 2000, 'to', 2],[112.0, 28000, 'cm', 2],[125.0, 30, 'down', 2],[128.0, 4, 'K', 2],[163.0, 3, 'K', 3]

At
###Low-temperature magnetotransport of narrow-gap semiconductor FeSb2|H. Takahashi,R. Okazaki,Y. Yasui,I. Terasaki###
(142607, 142607)
 At lower temperatures, themagnetoresistive behavior drastically changes and a negative magnetoresistanceis observed at 3 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 1, 'down', 1],[20.0, 2000, 'to', 1],[19.0, 28000, 'cm', 1],[6.0, 30, 'down', 1],[3.0, 4, 'K', 1],[32.0, 3, 'K', 0]

As
###Low-temperature magnetotransport of narrow-gap semiconductor FeSb2|H. Takahashi,R. Okazaki,Y. Yasui,I. Terasaki###
(142678, 142678)
 These low-temperature behaviors are reminiscent of thelow-temperature magnetotransport observed in doped semiconductors such asAs-doped Ge, which is well described by a weak-localization picture.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 1, 'down', 2],[91.0, 2000, 'to', 2],[90.0, 28000, 'cm', 2],[77.0, 30, 'down', 2],[74.0, 4, 'K', 2],[39.0, 3, 'K', 1]

Ge
###Low-temperature magnetotransport of narrow-gap semiconductor FeSb2|H. Takahashi,R. Okazaki,Y. Yasui,I. Terasaki###
(142682, 142682)
 These low-temperature behaviors are reminiscent of thelow-temperature magnetotransport observed in doped semiconductors such asAs-doped Ge, which is well described by a weak-localization picture.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 1, 'down', 2],[95.0, 2000, 'to', 2],[94.0, 28000, 'cm', 2],[81.0, 30, 'down', 2],[78.0, 4, 'K', 2],[43.0, 3, 'K', 1]

FeSb2
###Low-temperature magnetotransport of narrow-gap semiconductor FeSb2|H. Takahashi,R. Okazaki,Y. Yasui,I. Terasaki###
(142719, 142721)
 We argue adetailed electronic structure in FeSb2 inferred from our observations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 1, 'down', 3],[132.0, 2000, 'to', 3],[131.0, 28000, 'cm', 3],[118.0, 30, 'down', 3],[115.0, 4, 'K', 3],[80.0, 3, 'K', 2]

NbP
###Evidence for trivial Berry phase and absence of chiral anomaly in semimetal NbP|Sudesh,P. Kumar,P. Neha,T. Das,A. K. Rastogi,S. Patnaik###
(143395, 143396)
Evidence for trivial Berry phase and absence of chiral anomaly in semimetal NbP.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[254.0, 30.5, 'Tesla', 7]

NbP
###Evidence for trivial Berry phase and absence of chiral anomaly in semimetal NbP|Sudesh,P. Kumar,P. Neha,T. Das,A. K. Rastogi,S. Patnaik###
(143421, 143422)
 We report a detailed magneto-transport study in single crystals of NbP.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[228.0, 30.5, 'Tesla', 6]

NbP
###Evidence for trivial Berry phase and absence of chiral anomaly in semimetal NbP|Sudesh,P. Kumar,P. Neha,T. Das,A. K. Rastogi,S. Patnaik###
(143513, 143514)
 Models explaining the linear magnetoresistance arediscussed and it is argued that in NbP this is linked to charge carriermobility fluctuations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 30.5, 'Tesla', 3]

NbP
###Evidence for trivial Berry phase and absence of chiral anomaly in semimetal NbP|Sudesh,P. Kumar,P. Neha,T. Das,A. K. Rastogi,S. Patnaik###
(143576, 143577)
 Negative longitudinal magnetoresistance is not seen,unlike several other Weyl monopnictides, suggesting lack of well defined chiralanomaly in NbP.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 30.5, 'Tesla', 2]

NbP
###Evidence for trivial Berry phase and absence of chiral anomaly in semimetal NbP|Sudesh,P. Kumar,P. Neha,T. Das,A. K. Rastogi,S. Patnaik###
(143633, 143634)
 The Landau fan diagramindicates trivial Berry phase in NbP crystals corresponding to Fermi surfaceextrema at 30.5 Tesla.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 30.5, 'Tesla', 0]

S
###High frequency dynamics modulated by collective magnetization reversal in artificial spin ice|Matthias B. Jungfleisch,Joseph Sklenar,Junjia Ding,Jungsik Park,John E. Pearson,Valentine Novosad,Peter Schiffer,Axel Hoffmann###
(143695, 143695)
 Spin-torque ferromagnetic resonance (ST<missing VAR>-FMR) arises in heavymetal/ferromagnet heterostructures when an alternating charge current is passedthrough the bilayer stack.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###High frequency dynamics modulated by collective magnetization reversal in artificial spin ice|Matthias B. Jungfleisch,Joseph Sklenar,Junjia Ding,Jungsik Park,John E. Pearson,Valentine Novosad,Peter Schiffer,Axel Hoffmann###
(143698, 143698)
 Spin-torque ferromagnetic resonance (ST<missing VAR>-FMR) arises in heavymetal/ferromagnet heterostructures when an alternating charge current is passedthrough the bilayer stack.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###High frequency dynamics modulated by collective magnetization reversal in artificial spin ice|Matthias B. Jungfleisch,Joseph Sklenar,Junjia Ding,Jungsik Park,John E. Pearson,Valentine Novosad,Peter Schiffer,Axel Hoffmann###
(143798, 143798)
 In connectednetworks of ferromagnetic nanowires, known as artificial spin ice, themagnetoresistance is rather complex owing to the underlying collective behaviorof the geometrically frustrated magnetic domain structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###High frequency dynamics modulated by collective magnetization reversal in artificial spin ice|Matthias B. Jungfleisch,Joseph Sklenar,Junjia Ding,Jungsik Park,John E. Pearson,Valentine Novosad,Peter Schiffer,Axel Hoffmann###
(143870, 143870)
 Here, we demonstrateST<missing VAR>-FMR investigations in a square artificial spin-ice system and correlate ourobservations to magnetotransport measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###High frequency dynamics modulated by collective magnetization reversal in artificial spin ice|Matthias B. Jungfleisch,Joseph Sklenar,Junjia Ding,Jungsik Park,John E. Pearson,Valentine Novosad,Peter Schiffer,Axel Hoffmann###
(143873, 143873)
 Here, we demonstrateST<missing VAR>-FMR investigations in a square artificial spin-ice system and correlate ourobservations to magnetotransport measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs/AlGaAs
###Finite Temperature Behavior in the Second Landau Level of the Two-dimensional Electron Gas|V. Shingla,E. Kleinbaum,A. Kumar,L. N. Pfeiffer,K. W. West,G. A. Csathy###
(144112, 144117)
 Reports of weak local minima in the magnetoresistance at nu23/5,23/7, 24/9, 25/9, 25/7, and 25/8 in the second Landau level ofthe electron gas in GaAs/AlGaAs left open the possibility of fractional quantumHall states at these filling factors.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[56.0, 5, ',', 0],[49.0, 7, ',', 0],[43.0, 9, ',', 0],[37.0, 9, ',', 0],[31.0, 7, ',', 0]

In
###Finite Temperature Behavior in the Second Landau Level of the Two-dimensional Electron Gas|V. Shingla,E. Kleinbaum,A. Kumar,L. N. Pfeiffer,K. W. West,G. A. Csathy###
(144147, 144147)
 In a high quality sample we found thatthe magnetoresistance exhibits peculiar features near these filling factors ofinterest.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 5, ',', 1],[84.0, 7, ',', 1],[78.0, 9, ',', 1],[72.0, 9, ',', 1],[66.0, 7, ',', 1]

As
###Finite Temperature Behavior in the Second Landau Level of the Two-dimensional Electron Gas|V. Shingla,E. Kleinbaum,A. Kumar,L. N. Pfeiffer,K. W. West,G. A. Csathy###
(144290, 144290)
 As the temperature is lowered, these fractionalquantum Hall states collapse due to a phase competition with bubble phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[234.0, 5, ',', 4],[227.0, 7, ',', 4],[221.0, 9, ',', 4],[215.0, 9, ',', 4],[209.0, 7, ',', 4]

Co2MnSi
###Interface spin polarization of the Heusler compound Co2MnSi probed by unidirectional spin Hall magnetoresistance|C. Lidig,J. Cramer,L. Weißhoff,T. R. Thomas,T. Kessler,M. Kläui,M. Jourdan###
(144669, 144672)
Interface spin polarization of the Heusler compound Co2MnSi probed by unidirectional spin Hall magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ag
###Interface spin polarization of the Heusler compound Co2MnSi probed by unidirectional spin Hall magnetoresistance|C. Lidig,J. Cramer,L. Weißhoff,T. R. Thomas,T. Kessler,M. Kläui,M. Jourdan###
(144824, 144824)
Based on a Wheatstone-bridge design we probed the unidirectionalmagnetoresistance of Co2MnSi/(Ag, Cu, or Cr)(0.5 nm)/Pt (or Ta) multilayers andseparate the spin-dependent unidirectional spin Hall magnetoresistance fromother contributions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Interface spin polarization of the Heusler compound Co2MnSi probed by unidirectional spin Hall magnetoresistance|C. Lidig,J. Cramer,L. Weißhoff,T. R. Thomas,T. Kessler,M. Kläui,M. Jourdan###
(144827, 144827)
Based on a Wheatstone-bridge design we probed the unidirectionalmagnetoresistance of Co2MnSi/(Ag, Cu, or Cr)(0.5 nm)/Pt (or Ta) multilayers andseparate the spin-dependent unidirectional spin Hall magnetoresistance fromother contributions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr
###Interface spin polarization of the Heusler compound Co2MnSi probed by unidirectional spin Hall magnetoresistance|C. Lidig,J. Cramer,L. Weißhoff,T. R. Thomas,T. Kessler,M. Kläui,M. Jourdan###
(144832, 144832)
Based on a Wheatstone-bridge design we probed the unidirectionalmagnetoresistance of Co2MnSi/(Ag, Cu, or Cr)(0.5 nm)/Pt (or Ta) multilayers andseparate the spin-dependent unidirectional spin Hall magnetoresistance fromother contributions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Interface spin polarization of the Heusler compound Co2MnSi probed by unidirectional spin Hall magnetoresistance|C. Lidig,J. Cramer,L. Weißhoff,T. R. Thomas,T. Kessler,M. Kläui,M. Jourdan###
(144840, 144840)
Based on a Wheatstone-bridge design we probed the unidirectionalmagnetoresistance of Co2MnSi/(Ag, Cu, or Cr)(0.5 nm)/Pt (or Ta) multilayers andseparate the spin-dependent unidirectional spin Hall magnetoresistance fromother contributions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ta
###Interface spin polarization of the Heusler compound Co2MnSi probed by unidirectional spin Hall magnetoresistance|C. Lidig,J. Cramer,L. Weißhoff,T. R. Thomas,T. Kessler,M. Kläui,M. Jourdan###
(144845, 144845)
Based on a Wheatstone-bridge design we probed the unidirectionalmagnetoresistance of Co2MnSi/(Ag, Cu, or Cr)(0.5 nm)/Pt (or Ta) multilayers andseparate the spin-dependent unidirectional spin Hall magnetoresistance fromother contributions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ag
###Interface spin polarization of the Heusler compound Co2MnSi probed by unidirectional spin Hall magnetoresistance|C. Lidig,J. Cramer,L. Weißhoff,T. R. Thomas,T. Kessler,M. Kläui,M. Jourdan###
(144898, 144898)
 We demonstrated that by the insertion of a thin epitaxialAg layer the spin-dependent contribution is doubled corresponding to asignificant increase of the transport spin polarization, which is discussed inthe framework of highly spin polarized interface states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe1-xNi
###Composition dependence of magnetoresistance in Fe$_{1-x}$Ni$_{x}$ alloys|S. S. Acharya###
(145271, 145275)
Composition dependence of magnetoresistance in Fe1-xNix<missing VAR> alloys.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[18.0, 0.1, ',', 1],[21.0, 0.2, ',', 1],[24.0, 0.3, ',', 1],[27.0, 0.4, ',', 1],[30.0, 0.5, ',', 1],[33.0, 0.6, ',', 1],[35.0, 0.7, 'and', 1],[56.0, 5, 'K', 1],[59.0, 300, 'K', 1],[77.0, 8, 'T', 1],[139.0, 0.7, 'alloys', 2],[161.0, 0.9, 'exhibit', 3],[173.0, 5, 'K', 3],[176.0, 300, 'K', 3],[185.0, 0.7, 'alloys', 4],[257.0, 0.1, ',', 6],[259.0, 0.7, 'and', 6],[260.0, 0.9, 'alloys', 6]

Fe1-xNi
###Composition dependence of magnetoresistance in Fe$_{1-x}$Ni$_{x}$ alloys|S. S. Acharya###
(145285, 145289)
 Resistance of Fe1-xNix(x0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7 and 0.9)has been measured using four probe method from 5K to 300K with and without alongitudinal magnetic field of 8T.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[4.0, 0.1, ',', 0],[7.0, 0.2, ',', 0],[10.0, 0.3, ',', 0],[13.0, 0.4, ',', 0],[16.0, 0.5, ',', 0],[19.0, 0.6, ',', 0],[21.0, 0.7, 'and', 0],[42.0, 5, 'K', 0],[45.0, 300, 'K', 0],[63.0, 8, 'T', 0],[125.0, 0.7, 'alloys', 1],[147.0, 0.9, 'exhibit', 2],[159.0, 5, 'K', 2],[162.0, 300, 'K', 2],[171.0, 0.7, 'alloys', 3],[243.0, 0.1, ',', 5],[245.0, 0.7, 'and', 5],[246.0, 0.9, 'alloys', 5]

Ni
###Composition dependence of magnetoresistance in Fe$_{1-x}$Ni$_{x}$ alloys|S. S. Acharya###
(145504, 145504)
 The temperature at which sign changes increase with Niconcentration in the alloy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[211.0, 0.1, ',', 4],[208.0, 0.2, ',', 4],[205.0, 0.3, ',', 4],[202.0, 0.4, ',', 4],[199.0, 0.5, ',', 4],[196.0, 0.6, ',', 4],[194.0, 0.7, 'and', 4],[173.0, 5, 'K', 4],[170.0, 300, 'K', 4],[152.0, 8, 'T', 4],[90.0, 0.7, 'alloys', 3],[68.0, 0.9, 'exhibit', 2],[56.0, 5, 'K', 2],[53.0, 300, 'K', 2],[44.0, 0.7, 'alloys', 1],[28.0, 0.1, ',', 1],[30.0, 0.7, 'and', 1],[31.0, 0.9, 'alloys', 1]

WTe2
###Nonlinear magnetotransport shaped by Fermi surface topology and convexity in WTe2|Pan He,Chuang-Han Hsu,Shuyuan Shi,Kaiming Cai,Junyong Wang,Qisheng Wang,Goki Eda,Hsin Lin,Vitor M. Pereira,Hyunsoo Yang###
(145932, 145934)
Nonlinear magnetotransport shaped by Fermi surface topology and convexity in WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Nonlinear magnetotransport shaped by Fermi surface topology and convexity in WTe2|Pan He,Chuang-Han Hsu,Shuyuan Shi,Kaiming Cai,Junyong Wang,Qisheng Wang,Goki Eda,Hsin Lin,Vitor M. Pereira,Hyunsoo Yang###
(146081, 146083)
 Here, we report the observation of nonlinear magnetoresistance atroom temperature in a semimetal WTe2, with an interesting temperature-driveninversion.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Nonlinear magnetotransport shaped by Fermi surface topology and convexity in WTe2|Pan He,Chuang-Han Hsu,Shuyuan Shi,Kaiming Cai,Junyong Wang,Qisheng Wang,Goki Eda,Hsin Lin,Vitor M. Pereira,Hyunsoo Yang###
(146168, 146170)
 We also report a large anisotropy ofnonlinear magnetoresistance in WTe2, due to its low symmetry of Fermi surfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoAs2
###Dirac state switching in transition metal diarsenides|Gyanendra Dhakal,M. Mofazzel Hosen,Wei-Chi Chu,Bahadur Singh,Klauss Dimitri,BaoKai Wang,Firoza Kabir,Christopher Sims,Sabin Regmi,William Neff,Dariusz Kaczorowski,Arun Bansil,Madhab Neupane###
(146381, 146383)
 Transition metal diarsenides such as MoAs2 and WAs2have been reported to harbor very high magnetoresistance suggesting thepossible existence of a topological quantum state, although this conclusionremains dubious.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WAs2
###Dirac state switching in transition metal diarsenides|Gyanendra Dhakal,M. Mofazzel Hosen,Wei-Chi Chu,Bahadur Singh,Klauss Dimitri,BaoKai Wang,Firoza Kabir,Christopher Sims,Sabin Regmi,William Neff,Dariusz Kaczorowski,Arun Bansil,Madhab Neupane###
(146387, 146389)
 Transition metal diarsenides such as MoAs2 and WAs2have been reported to harbor very high magnetoresistance suggesting thepossible existence of a topological quantum state, although this conclusionremains dubious.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Dirac state switching in transition metal diarsenides|Gyanendra Dhakal,M. Mofazzel Hosen,Wei-Chi Chu,Bahadur Singh,Klauss Dimitri,BaoKai Wang,Firoza Kabir,Christopher Sims,Sabin Regmi,William Neff,Dariusz Kaczorowski,Arun Bansil,Madhab Neupane###
(146463, 146463)
 Here, based on systematic angle-resolved photoemissionspectroscopy (ARPES) measurements and parallel first-principles calculations,we investigate the electronic properties of T<missing VAR>As2 (T<missing VAR>  Mo, W).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As2
###Dirac state switching in transition metal diarsenides|Gyanendra Dhakal,M. Mofazzel Hosen,Wei-Chi Chu,Bahadur Singh,Klauss Dimitri,BaoKai Wang,Firoza Kabir,Christopher Sims,Sabin Regmi,William Neff,Dariusz Kaczorowski,Arun Bansil,Madhab Neupane###
(146493, 146494)
 Here, based on systematic angle-resolved photoemissionspectroscopy (ARPES) measurements and parallel first-principles calculations,we investigate the electronic properties of T<missing VAR>As2 (T<missing VAR>  Mo, W).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mo
###Dirac state switching in transition metal diarsenides|Gyanendra Dhakal,M. Mofazzel Hosen,Wei-Chi Chu,Bahadur Singh,Klauss Dimitri,BaoKai Wang,Firoza Kabir,Christopher Sims,Sabin Regmi,William Neff,Dariusz Kaczorowski,Arun Bansil,Madhab Neupane###
(146500, 146500)
 Here, based on systematic angle-resolved photoemissionspectroscopy (ARPES) measurements and parallel first-principles calculations,we investigate the electronic properties of T<missing VAR>As2 (T<missing VAR>  Mo, W).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Dirac state switching in transition metal diarsenides|Gyanendra Dhakal,M. Mofazzel Hosen,Wei-Chi Chu,Bahadur Singh,Klauss Dimitri,BaoKai Wang,Firoza Kabir,Christopher Sims,Sabin Regmi,William Neff,Dariusz Kaczorowski,Arun Bansil,Madhab Neupane###
(146503, 146503)
 Here, based on systematic angle-resolved photoemissionspectroscopy (ARPES) measurements and parallel first-principles calculations,we investigate the electronic properties of T<missing VAR>As2 (T<missing VAR>  Mo, W).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoAs2
###Dirac state switching in transition metal diarsenides|Gyanendra Dhakal,M. Mofazzel Hosen,Wei-Chi Chu,Bahadur Singh,Klauss Dimitri,BaoKai Wang,Firoza Kabir,Christopher Sims,Sabin Regmi,William Neff,Dariusz Kaczorowski,Arun Bansil,Madhab Neupane###
(146533, 146535)
 Importantly,clear evidence for switching the single-Dirac cone surface state in MoAs2 withthe cleaving plane is observed, whereas a Dirac state is not observed in WAs2despite its high magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WAs2
###Dirac state switching in transition metal diarsenides|Gyanendra Dhakal,M. Mofazzel Hosen,Wei-Chi Chu,Bahadur Singh,Klauss Dimitri,BaoKai Wang,Firoza Kabir,Christopher Sims,Sabin Regmi,William Neff,Dariusz Kaczorowski,Arun Bansil,Madhab Neupane###
(146567, 146569)
 Importantly,clear evidence for switching the single-Dirac cone surface state in MoAs2 withthe cleaving plane is observed, whereas a Dirac state is not observed in WAs2despite its high magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co2TiAl
###Scaling Analysis of Anomalous Hall Resistivity in the Co$_{2}$TiAl Heusler Alloy|Rudra Prasad Jena,Devendra Kumar,Archana Lakhani###
(146671, 146674)
Scaling Analysis of Anomalous Hall Resistivity in the Co2TiAl Heusler Alloy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 125, 'K', 2]

Co2TiAl
###Scaling Analysis of Anomalous Hall Resistivity in the Co$_{2}$TiAl Heusler Alloy|Rudra Prasad Jena,Devendra Kumar,Archana Lakhani###
(146740, 146743)
 A comprehensive magnetotransport study including resistivity (rhoxx) atvarious fields, isothermal magnetoresistance and Hall resistivity (rhoxy)has been carried out at different temperatures on the Co2TiAl Heusleralloy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 125, 'K', 1]

Co2TiAl
###Scaling Analysis of Anomalous Hall Resistivity in the Co$_{2}$TiAl Heusler Alloy|Rudra Prasad Jena,Devendra Kumar,Archana Lakhani###
(146751, 146754)
 Co2TiAl alloy shows a paramagnetic (PM) to ferromagnetic (FM)transition below the curie temperature (T<missing VAR>C) sim 125 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 125, 'K', 0]

P
###Scaling Analysis of Anomalous Hall Resistivity in the Co$_{2}$TiAl Heusler Alloy|Rudra Prasad Jena,Devendra Kumar,Archana Lakhani###
(146765, 146765)
 Co2TiAl alloy shows a paramagnetic (PM) to ferromagnetic (FM)transition below the curie temperature (T<missing VAR>C) sim 125 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 125, 'K', 0]

F
###Scaling Analysis of Anomalous Hall Resistivity in the Co$_{2}$TiAl Heusler Alloy|Rudra Prasad Jena,Devendra Kumar,Archana Lakhani###
(146774, 146774)
 Co2TiAl alloy shows a paramagnetic (PM) to ferromagnetic (FM)transition below the curie temperature (T<missing VAR>C) sim 125 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 125, 'K', 0]

C
###Scaling Analysis of Anomalous Hall Resistivity in the Co$_{2}$TiAl Heusler Alloy|Rudra Prasad Jena,Devendra Kumar,Archana Lakhani###
(146791, 146791)
 Co2TiAl alloy shows a paramagnetic (PM) to ferromagnetic (FM)transition below the curie temperature (T<missing VAR>C) sim 125 K.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 125, 'K', 0]

In
###Scaling Analysis of Anomalous Hall Resistivity in the Co$_{2}$TiAl Heusler Alloy|Rudra Prasad Jena,Devendra Kumar,Archana Lakhani###
(146798, 146798)
 In the FM<missing VAR>region, resistivity and magnetoresistance reveals a spin flip electron-magnonscattering and the Hall resistivity unveils the anomalous Hall resistivity(rhoxyAH).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 125, 'K', 1]

F
###Scaling Analysis of Anomalous Hall Resistivity in the Co$_{2}$TiAl Heusler Alloy|Rudra Prasad Jena,Devendra Kumar,Archana Lakhani###
(146802, 146802)
 In the FM<missing VAR>region, resistivity and magnetoresistance reveals a spin flip electron-magnonscattering and the Hall resistivity unveils the anomalous Hall resistivity(rhoxyAH).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 125, 'K', 1]

H
###Scaling Analysis of Anomalous Hall Resistivity in the Co$_{2}$TiAl Heusler Alloy|Rudra Prasad Jena,Devendra Kumar,Archana Lakhani###
(146853, 146853)
 In the FM<missing VAR>region, resistivity and magnetoresistance reveals a spin flip electron-magnonscattering and the Hall resistivity unveils the anomalous Hall resistivity(rhoxyAH).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 125, 'K', 1]

VSe2
###Pressure-induced suppression of charge density wave and emergence of Superconductivity in 1T-VSe2|S. Sahoo,U. Dutta,L. Harnagea,A. K. Sood,S. Karmakar###
(147025, 147027)
Pressure-induced suppression of charge density wave and emergence of Superconductivity in 1T-VSe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 1, 'T', 0],[42.0, 1, 'T', 1],[107.0, 240, 'K', 2],[110.0, 12, 'GPa', 2],[177.0, 4, 'K', 3],[267.0, 6, 'GPa', 5],[270.0, 12, 'GPa', 5]

C
###Pressure-induced suppression of charge density wave and emergence of Superconductivity in 1T-VSe2|S. Sahoo,U. Dutta,L. Harnagea,A. K. Sood,S. Karmakar###
(147047, 147047)
 We report pressure evolution of charge density wave (CD<missing VAR>W) order and emergenceof superconductivity (SC) in 1T-VSe2 single crystal by studying resistance andmagnetoresistance behavior under high pressure.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 1, 'T', 1],[22.0, 1, 'T', 0],[87.0, 240, 'K', 1],[90.0, 12, 'GPa', 1],[157.0, 4, 'K', 2],[247.0, 6, 'GPa', 4],[250.0, 12, 'GPa', 4]

W
###Pressure-induced suppression of charge density wave and emergence of Superconductivity in 1T-VSe2|S. Sahoo,U. Dutta,L. Harnagea,A. K. Sood,S. Karmakar###
(147049, 147049)
 We report pressure evolution of charge density wave (CD<missing VAR>W) order and emergenceof superconductivity (SC) in 1T-VSe2 single crystal by studying resistance andmagnetoresistance behavior under high pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 1, 'T', 1],[20.0, 1, 'T', 0],[85.0, 240, 'K', 1],[88.0, 12, 'GPa', 1],[155.0, 4, 'K', 2],[245.0, 6, 'GPa', 4],[248.0, 12, 'GPa', 4]

(SC)
###Pressure-induced suppression of charge density wave and emergence of Superconductivity in 1T-VSe2|S. Sahoo,U. Dutta,L. Harnagea,A. K. Sood,S. Karmakar###
(147063, 147066)
 We report pressure evolution of charge density wave (CD<missing VAR>W) order and emergenceof superconductivity (SC) in 1T-VSe2 single crystal by studying resistance andmagnetoresistance behavior under high pressure.
Featurization successful!
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 1, 'T', 1],[3.0, 1, 'T', 0],[68.0, 240, 'K', 1],[71.0, 12, 'GPa', 1],[138.0, 4, 'K', 2],[228.0, 6, 'GPa', 4],[231.0, 12, 'GPa', 4]

VSe2
###Pressure-induced suppression of charge density wave and emergence of Superconductivity in 1T-VSe2|S. Sahoo,U. Dutta,L. Harnagea,A. K. Sood,S. Karmakar###
(147071, 147073)
 We report pressure evolution of charge density wave (CD<missing VAR>W) order and emergenceof superconductivity (SC) in 1T-VSe2 single crystal by studying resistance andmagnetoresistance behavior under high pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 1, 'T', 1],[2.0, 1, 'T', 0],[61.0, 240, 'K', 1],[64.0, 12, 'GPa', 1],[131.0, 4, 'K', 2],[221.0, 6, 'GPa', 4],[224.0, 12, 'GPa', 4]

C
###Pressure-induced suppression of charge density wave and emergence of Superconductivity in 1T-VSe2|S. Sahoo,U. Dutta,L. Harnagea,A. K. Sood,S. Karmakar###
(147112, 147112)
 With increasingquasi-hydrostatic pressure the CD<missing VAR>W order enhances with increase ofthe orderingtemperature up to 240K at 12 GPa.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 1, 'T', 2],[43.0, 1, 'T', 1],[22.0, 240, 'K', 0],[25.0, 12, 'GPa', 0],[92.0, 4, 'K', 1],[182.0, 6, 'GPa', 3],[185.0, 12, 'GPa', 3]

W
###Pressure-induced suppression of charge density wave and emergence of Superconductivity in 1T-VSe2|S. Sahoo,U. Dutta,L. Harnagea,A. K. Sood,S. Karmakar###
(147114, 147114)
 With increasingquasi-hydrostatic pressure the CD<missing VAR>W order enhances with increase ofthe orderingtemperature up to 240K at 12 GPa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 1, 'T', 2],[45.0, 1, 'T', 1],[20.0, 240, 'K', 0],[23.0, 12, 'GPa', 0],[90.0, 4, 'K', 1],[180.0, 6, 'GPa', 3],[183.0, 12, 'GPa', 3]

C
###Pressure-induced suppression of charge density wave and emergence of Superconductivity in 1T-VSe2|S. Sahoo,U. Dutta,L. Harnagea,A. K. Sood,S. Karmakar###
(147162, 147162)
 Upon further increase of pressure, theresistance anomaly due to CD<missing VAR>W order gets suppressed drastically andsuperconductivity emerges at 15 G<missing VAR>Pa, with the onset critical temperature (Tc) 4K.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 1, 'T', 3],[93.0, 1, 'T', 2],[28.0, 240, 'K', 1],[25.0, 12, 'GPa', 1],[42.0, 4, 'K', 0],[132.0, 6, 'GPa', 2],[135.0, 12, 'GPa', 2]

W
###Pressure-induced suppression of charge density wave and emergence of Superconductivity in 1T-VSe2|S. Sahoo,U. Dutta,L. Harnagea,A. K. Sood,S. Karmakar###
(147164, 147164)
 Upon further increase of pressure, theresistance anomaly due to CD<missing VAR>W order gets suppressed drastically andsuperconductivity emerges at 15 G<missing VAR>Pa, with the onset critical temperature (Tc) 4K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 1, 'T', 3],[95.0, 1, 'T', 2],[30.0, 240, 'K', 1],[27.0, 12, 'GPa', 1],[40.0, 4, 'K', 0],[130.0, 6, 'GPa', 2],[133.0, 12, 'GPa', 2]

Pa
###Pressure-induced suppression of charge density wave and emergence of Superconductivity in 1T-VSe2|S. Sahoo,U. Dutta,L. Harnagea,A. K. Sood,S. Karmakar###
(147186, 147186)
 Upon further increase of pressure, theresistance anomaly due to CD<missing VAR>W order gets suppressed drastically andsuperconductivity emerges at 15 G<missing VAR>Pa, with the onset critical temperature (Tc) 4K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 1, 'T', 3],[117.0, 1, 'T', 2],[52.0, 240, 'K', 1],[49.0, 12, 'GPa', 1],[18.0, 4, 'K', 0],[108.0, 6, 'GPa', 2],[111.0, 12, 'GPa', 2]

(Tc)
###Pressure-induced suppression of charge density wave and emergence of Superconductivity in 1T-VSe2|S. Sahoo,U. Dutta,L. Harnagea,A. K. Sood,S. Karmakar###
(147199, 147201)
 Upon further increase of pressure, theresistance anomaly due to CD<missing VAR>W order gets suppressed drastically andsuperconductivity emerges at 15 G<missing VAR>Pa, with the onset critical temperature (Tc) 4K.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[176.0, 1, 'T', 3],[130.0, 1, 'T', 2],[65.0, 240, 'K', 1],[62.0, 12, 'GPa', 1],[3.0, 4, 'K', 0],[93.0, 6, 'GPa', 2],[96.0, 12, 'GPa', 2]

Tc
###Pressure-induced suppression of charge density wave and emergence of Superconductivity in 1T-VSe2|S. Sahoo,U. Dutta,L. Harnagea,A. K. Sood,S. Karmakar###
(147215, 147215)
 The pressure dependence of Tc is found negligible, different from thesignificant increase or a dome-shape seen in iso-structural layered diselenidesuperconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[192.0, 1, 'T', 4],[146.0, 1, 'T', 3],[81.0, 240, 'K', 2],[78.0, 12, 'GPa', 2],[11.0, 4, 'K', 1],[79.0, 6, 'GPa', 1],[82.0, 12, 'GPa', 1]

C
###Pressure-induced suppression of charge density wave and emergence of Superconductivity in 1T-VSe2|S. Sahoo,U. Dutta,L. Harnagea,A. K. Sood,S. Karmakar###
(147327, 147327)
 From the observed negative magnetoresistancein this pressure range and absence of coexisting CD<missing VAR>W and SC phases, we proposethat intra-layer spin-fluctuation can play a role in the emergence ofsuperconductivity in the high pressure phase.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[304.0, 1, 'T', 6],[258.0, 1, 'T', 5],[193.0, 240, 'K', 4],[190.0, 12, 'GPa', 4],[123.0, 4, 'K', 3],[33.0, 6, 'GPa', 1],[30.0, 12, 'GPa', 1]

W
###Pressure-induced suppression of charge density wave and emergence of Superconductivity in 1T-VSe2|S. Sahoo,U. Dutta,L. Harnagea,A. K. Sood,S. Karmakar###
(147329, 147329)
 From the observed negative magnetoresistancein this pressure range and absence of coexisting CD<missing VAR>W and SC phases, we proposethat intra-layer spin-fluctuation can play a role in the emergence ofsuperconductivity in the high pressure phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[306.0, 1, 'T', 6],[260.0, 1, 'T', 5],[195.0, 240, 'K', 4],[192.0, 12, 'GPa', 4],[125.0, 4, 'K', 3],[35.0, 6, 'GPa', 1],[32.0, 12, 'GPa', 1]

SC
###Pressure-induced suppression of charge density wave and emergence of Superconductivity in 1T-VSe2|S. Sahoo,U. Dutta,L. Harnagea,A. K. Sood,S. Karmakar###
(147333, 147334)
 From the observed negative magnetoresistancein this pressure range and absence of coexisting CD<missing VAR>W and SC phases, we proposethat intra-layer spin-fluctuation can play a role in the emergence ofsuperconductivity in the high pressure phase.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[310.0, 1, 'T', 6],[264.0, 1, 'T', 5],[199.0, 240, 'K', 4],[196.0, 12, 'GPa', 4],[129.0, 4, 'K', 3],[39.0, 6, 'GPa', 1],[36.0, 12, 'GPa', 1]

CuMnAs
###Spin flop and crystalline anisotropic magnetoresistance in CuMnAs|M. Wang,C. Andrews,S. Reimers,O. J. Amin,P. Wadley,R. P. Campion,S. F. Poole,J. Felton,K. W. Edmonds,B. L. Gallagher,A. W. Rushforth,O. Makarovsky,K. Gas,M. Sawicki,D. Kriegner,J. Zubac,K. Olejnik,V. Novak,T. Jungwirth,M. Shahrokhvand,U. Zeitler,S. S. Dhesi,F. Maccherozzi###
(147406, 147408)
Spin flop and crystalline anisotropic magnetoresistance in CuMnAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CuMnAs
###Spin flop and crystalline anisotropic magnetoresistance in CuMnAs|M. Wang,C. Andrews,S. Reimers,O. J. Amin,P. Wadley,R. P. Campion,S. F. Poole,J. Felton,K. W. Edmonds,B. L. Gallagher,A. W. Rushforth,O. Makarovsky,K. Gas,M. Sawicki,D. Kriegner,J. Zubac,K. Olejnik,V. Novak,T. Jungwirth,M. Shahrokhvand,U. Zeitler,S. S. Dhesi,F. Maccherozzi###
(147570, 147572)
 Here we report a magnetic field induced rotation of theantiferromagnetic Neel vector in epitaxial tetragonal CuMnAs thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt/EuO1-x
###Resolution of spin Hall and anisotropic magnetoresistance in Pt/EuO$_{1-x}$|Kingshuk Mallick,Aditya A. Wagh,Adrian Ionescu,Crispin H. W. Barnes,P. S. Anil Kumar###
(147747, 147753)
Resolution of spin Hall and anisotropic magnetoresistance in Pt/EuO1-x.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Bi2Se3
###Structural and magneto-transport studies of iron intercalated Bi2Se3 single crystals|Shailja Sharma,C. S. Yadav###
(148092, 148095)
Structural and magneto-transport studies of iron intercalated Bi2Se3 single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[259.0, 300, 'K', 6]

Bi2Se3
###Structural and magneto-transport studies of iron intercalated Bi2Se3 single crystals|Shailja Sharma,C. S. Yadav###
(148129, 148132)
 A detailed investigation on the structural and magneto-transport propertiesof iron intercalated Bi2Se3 single crystals have been presented.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[222.0, 300, 'K', 5]

Fe
###Structural and magneto-transport studies of iron intercalated Bi2Se3 single crystals|Shailja Sharma,C. S. Yadav###
(148168, 148168)
 The x<missing VAR>-raydiffraction and Raman studies confirm the intercalation of Fe in the van derWaals gaps between the layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, 300, 'K', 4]

Fe
###Structural and magneto-transport studies of iron intercalated Bi2Se3 single crystals|Shailja Sharma,C. S. Yadav###
(148273, 148273)
Intercalation of Fe increases the onset of the linear magnetoresistancebehavior, indicating the reduction in quantum effects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 300, 'K', 1]

In
###Giant Magnetoresistance in Boundary-Driven Spin Chains|Kasper Poulsen,Nikolaj T. Zinner###
(148380, 148380)
 In solid state physics, giant magnetoresistance is the large change inelectrical resistance due to an external magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Te3
###Magnetic field-dependent resistance crossover and logarithmic to non-saturating magnetoresistance in topological insulator Bi$_2$Te$_3$|Anand Nivedan,Kamal Das,Sandeep Kumar,Arvind Singh,Sougata Mardanya,Amit Agarwal,Sunil Kumar###
(148687, 148690)
Magnetic field-dependent resistance crossover and logarithmic to non-saturating magnetoresistance in topological insulator Bi2Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 3, 'D', 1],[41.0, 230, 'K', 1]

Bi2Te3
###Magnetic field-dependent resistance crossover and logarithmic to non-saturating magnetoresistance in topological insulator Bi$_2$Te$_3$|Anand Nivedan,Kamal Das,Sandeep Kumar,Arvind Singh,Sougata Mardanya,Amit Agarwal,Sunil Kumar###
(148719, 148722)
 We report a metal-insulator like transition in single crystalline 3Dtopological insulator Bi2Te3 at a temperature of 230K in presence of anexternal magnetic field applied normal to the surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 3, 'D', 0],[9.0, 230, 'K', 0]

At
###Magnetic field-dependent resistance crossover and logarithmic to non-saturating magnetoresistance in topological insulator Bi$_2$Te$_3$|Anand Nivedan,Kamal Das,Sandeep Kumar,Arvind Singh,Sougata Mardanya,Amit Agarwal,Sunil Kumar###
(148804, 148804)
 At low temperature, themagnetic field dependence of the magnetoresistance shows a transition fromlogarithmic to linear behavior and the onset magnetic field value for thistransition decreases with increasing temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 3, 'D', 2],[73.0, 230, 'K', 2]

At
###Magnetic field-dependent resistance crossover and logarithmic to non-saturating magnetoresistance in topological insulator Bi$_2$Te$_3$|Anand Nivedan,Kamal Das,Sandeep Kumar,Arvind Singh,Sougata Mardanya,Amit Agarwal,Sunil Kumar###
(148929, 148929)
 At even higher temperatures beyond230 K, acompletely classical Lorentz model type quadratic behavior of themagnetoresistance is observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[217.0, 3, 'D', 4],[198.0, 230, 'K', 4]

K
###Magnetic field-dependent resistance crossover and logarithmic to non-saturating magnetoresistance in topological insulator Bi$_2$Te$_3$|Anand Nivedan,Kamal Das,Sandeep Kumar,Arvind Singh,Sougata Mardanya,Amit Agarwal,Sunil Kumar###
(148940, 148940)
 At even higher temperatures beyond230 K, acompletely classical Lorentz model type quadratic behavior of themagnetoresistance is observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[228.0, 3, 'D', 4],[209.0, 230, 'K', 4]

K
###Magnetic field-dependent resistance crossover and logarithmic to non-saturating magnetoresistance in topological insulator Bi$_2$Te$_3$|Anand Nivedan,Kamal Das,Sandeep Kumar,Arvind Singh,Sougata Mardanya,Amit Agarwal,Sunil Kumar###
(148992, 148992)
 We also show that the experimentally observedanomalies at 230K in the magneto-transport properties do not originate fromany stacking fault in Bi2Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[280.0, 3, 'D', 5],[261.0, 230, 'K', 5]

Bi2Te3
###Magnetic field-dependent resistance crossover and logarithmic to non-saturating magnetoresistance in topological insulator Bi$_2$Te$_3$|Anand Nivedan,Kamal Das,Sandeep Kumar,Arvind Singh,Sougata Mardanya,Amit Agarwal,Sunil Kumar###
(149021, 149024)
 We also show that the experimentally observedanomalies at 230K in the magneto-transport properties do not originate fromany stacking fault in Bi2Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[309.0, 3, 'D', 5],[290.0, 230, 'K', 5]

EuAg4As2
###Metamagnetic transitions and anomalous magnetoresistance in EuAg$_4$As$_2$ single crystal|Qinqing Zhu,Liang Li,Zhihua Yang,Zhefeng Lou,Jianhua Du,Jinhu Yang,Bin Chen,Hangdong Wang,Minghu Fang###
(149047, 149051)
Metamagnetic transitions and anomalous magnetoresistance in EuAg4As2 single crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 10, 'K', 2],[99.0, 15, 'K', 2],[221.0, 202, '%', 5],[232.0, 10, 'K', 5],[251.0, -78, '%', 5]

In
###Metamagnetic transitions and anomalous magnetoresistance in EuAg$_4$As$_2$ single crystal|Qinqing Zhu,Liang Li,Zhihua Yang,Zhefeng Lou,Jianhua Du,Jinhu Yang,Bin Chen,Hangdong Wang,Minghu Fang###
(149058, 149058)
 In this paper, the magnetic and transport properties were systematicallystudied for EuAg4As2 single crystals, crystallizing in a centrosymmetrictrigonal CaCu4P2 type structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 10, 'K', 1],[92.0, 15, 'K', 1],[214.0, 202, '%', 4],[225.0, 10, 'K', 4],[244.0, -78, '%', 4]

EuAg4As2
###Metamagnetic transitions and anomalous magnetoresistance in EuAg$_4$As$_2$ single crystal|Qinqing Zhu,Liang Li,Zhihua Yang,Zhefeng Lou,Jianhua Du,Jinhu Yang,Bin Chen,Hangdong Wang,Minghu Fang###
(149084, 149088)
 In this paper, the magnetic and transport properties were systematicallystudied for EuAg4As2 single crystals, crystallizing in a centrosymmetrictrigonal CaCu4P2 type structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 10, 'K', 1],[62.0, 15, 'K', 1],[184.0, 202, '%', 4],[195.0, 10, 'K', 4],[214.0, -78, '%', 4]

CaCu4P2
###Metamagnetic transitions and anomalous magnetoresistance in EuAg$_4$As$_2$ single crystal|Qinqing Zhu,Liang Li,Zhihua Yang,Zhefeng Lou,Jianhua Du,Jinhu Yang,Bin Chen,Hangdong Wang,Minghu Fang###
(149106, 149110)
 In this paper, the magnetic and transport properties were systematicallystudied for EuAg4As2 single crystals, crystallizing in a centrosymmetrictrigonal CaCu4P2 type structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 10, 'K', 1],[40.0, 15, 'K', 1],[162.0, 202, '%', 4],[173.0, 10, 'K', 4],[192.0, -78, '%', 4]

N1
###Metamagnetic transitions and anomalous magnetoresistance in EuAg$_4$As$_2$ single crystal|Qinqing Zhu,Liang Li,Zhihua Yang,Zhefeng Lou,Jianhua Du,Jinhu Yang,Bin Chen,Hangdong Wang,Minghu Fang###
(149138, 149139)
 It was confirmed that two magnetictransitions occur at textitT<missing VAR>N1  10 K and textitT<missing VAR>N2  15 K,respectively.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 10, 'K', 0],[11.0, 15, 'K', 0],[133.0, 202, '%', 3],[144.0, 10, 'K', 3],[163.0, -78, '%', 3]

N2
###Metamagnetic transitions and anomalous magnetoresistance in EuAg$_4$As$_2$ single crystal|Qinqing Zhu,Liang Li,Zhihua Yang,Zhefeng Lou,Jianhua Du,Jinhu Yang,Bin Chen,Hangdong Wang,Minghu Fang###
(149147, 149148)
 It was confirmed that two magnetictransitions occur at textitT<missing VAR>N1  10 K and textitT<missing VAR>N2  15 K,respectively.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 10, 'K', 0],[2.0, 15, 'K', 0],[124.0, 202, '%', 3],[135.0, 10, 'K', 3],[154.0, -78, '%', 3]

At
###Metamagnetic transitions and anomalous magnetoresistance in EuAg$_4$As$_2$ single crystal|Qinqing Zhu,Liang Li,Zhihua Yang,Zhefeng Lou,Jianhua Du,Jinhu Yang,Bin Chen,Hangdong Wang,Minghu Fang###
(149186, 149186)
 At low temperatures, applying a magnetic field inthe textitab plane induces two successive metamagnetic transitions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 10, 'K', 2],[36.0, 15, 'K', 2],[86.0, 202, '%', 1],[97.0, 10, 'K', 1],[116.0, -78, '%', 1]

H
###Metamagnetic transitions and anomalous magnetoresistance in EuAg$_4$As$_2$ single crystal|Qinqing Zhu,Liang Li,Zhihua Yang,Zhefeng Lou,Jianhua Du,Jinhu Yang,Bin Chen,Hangdong Wang,Minghu Fang###
(149228, 149228)
 Forboth textitH parallel textitab and textitH paralleltextitc<missing VAR>, EuAg4As2 shows a positive, unexpected largemagnetoresistance (up to 202%) at low fields below 10 K, and a large negativemagnetoresistance (up to -78%) at high fields/intermediate temperatures.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 10, 'K', 3],[78.0, 15, 'K', 3],[44.0, 202, '%', 0],[55.0, 10, 'K', 0],[74.0, -78, '%', 0]

H
###Metamagnetic transitions and anomalous magnetoresistance in EuAg$_4$As$_2$ single crystal|Qinqing Zhu,Liang Li,Zhihua Yang,Zhefeng Lou,Jianhua Du,Jinhu Yang,Bin Chen,Hangdong Wang,Minghu Fang###
(149238, 149238)
 Forboth textitH parallel textitab and textitH paralleltextitc<missing VAR>, EuAg4As2 shows a positive, unexpected largemagnetoresistance (up to 202%) at low fields below 10 K, and a large negativemagnetoresistance (up to -78%) at high fields/intermediate temperatures.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 10, 'K', 3],[88.0, 15, 'K', 3],[34.0, 202, '%', 0],[45.0, 10, 'K', 0],[64.0, -78, '%', 0]

EuAg4As2
###Metamagnetic transitions and anomalous magnetoresistance in EuAg$_4$As$_2$ single crystal|Qinqing Zhu,Liang Li,Zhihua Yang,Zhefeng Lou,Jianhua Du,Jinhu Yang,Bin Chen,Hangdong Wang,Minghu Fang###
(149247, 149251)
 Forboth textitH parallel textitab and textitH paralleltextitc<missing VAR>, EuAg4As2 shows a positive, unexpected largemagnetoresistance (up to 202%) at low fields below 10 K, and a large negativemagnetoresistance (up to -78%) at high fields/intermediate temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 10, 'K', 3],[97.0, 15, 'K', 3],[21.0, 202, '%', 0],[32.0, 10, 'K', 0],[51.0, -78, '%', 0]

EuAg4As2
###Metamagnetic transitions and anomalous magnetoresistance in EuAg$_4$As$_2$ single crystal|Qinqing Zhu,Liang Li,Zhihua Yang,Zhefeng Lou,Jianhua Du,Jinhu Yang,Bin Chen,Hangdong Wang,Minghu Fang###
(149365, 149369)
 Finally, the magnetic phase diagrams ofEuAg4As2 were constructed for both textitH paralleltextitab and textitH parallel textitc<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[224.0, 10, 'K', 5],[215.0, 15, 'K', 5],[93.0, 202, '%', 2],[82.0, 10, 'K', 2],[63.0, -78, '%', 2]

H
###Metamagnetic transitions and anomalous magnetoresistance in EuAg$_4$As$_2$ single crystal|Qinqing Zhu,Liang Li,Zhihua Yang,Zhefeng Lou,Jianhua Du,Jinhu Yang,Bin Chen,Hangdong Wang,Minghu Fang###
(149380, 149380)
 Finally, the magnetic phase diagrams ofEuAg4As2 were constructed for both textitH paralleltextitab and textitH parallel textitc<missing VAR>.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[239.0, 10, 'K', 5],[230.0, 15, 'K', 5],[108.0, 202, '%', 2],[97.0, 10, 'K', 2],[78.0, -78, '%', 2]

H
###Metamagnetic transitions and anomalous magnetoresistance in EuAg$_4$As$_2$ single crystal|Qinqing Zhu,Liang Li,Zhihua Yang,Zhefeng Lou,Jianhua Du,Jinhu Yang,Bin Chen,Hangdong Wang,Minghu Fang###
(149391, 149391)
 Finally, the magnetic phase diagrams ofEuAg4As2 were constructed for both textitH paralleltextitab and textitH parallel textitc<missing VAR>.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[250.0, 10, 'K', 5],[241.0, 15, 'K', 5],[119.0, 202, '%', 2],[108.0, 10, 'K', 2],[89.0, -78, '%', 2]

WTe2
###Cooperative orbital moments and edge magnetoresistance in monolayer WTe$_2$|Arpit Arora,Li-kun Shi,Justin C. W. Song###
(149423, 149425)
Cooperative orbital moments and edge magnetoresistance in monolayer WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[326.0, 10, 'T', 6]

WTe2
###Cooperative orbital moments and edge magnetoresistance in monolayer WTe$_2$|Arpit Arora,Li-kun Shi,Justin C. W. Song###
(149442, 149444)
 We argue that edge electrons in monolayer WTe2 can possess a cooperativeorbital moment (COM) that critically impacts its edge magnetoresistancebehavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[307.0, 10, 'T', 5]

CO
###Cooperative orbital moments and edge magnetoresistance in monolayer WTe$_2$|Arpit Arora,Li-kun Shi,Justin C. W. Song###
(149460, 149461)
 We argue that edge electrons in monolayer WTe2 can possess a cooperativeorbital moment (COM) that critically impacts its edge magnetoresistancebehavior.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[290.0, 10, 'T', 5]

CO
###Cooperative orbital moments and edge magnetoresistance in monolayer WTe$_2$|Arpit Arora,Li-kun Shi,Justin C. W. Song###
(149509, 149510)
 Arising from the cooperative action of both Rashba and Ising spinorbit coupling, COM<missing VAR> quickly achieves large magnitudes (of order few Bohrmagnetons) even for relatively small spin-orbit coupling strengths.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[241.0, 10, 'T', 4]

As
###Cooperative orbital moments and edge magnetoresistance in monolayer WTe$_2$|Arpit Arora,Li-kun Shi,Justin C. W. Song###
(149551, 149551)
 As weexplain, such large COM<missing VAR> magnitudes arise from an unconventional cooperativespin canting of edge spins when Rashba and Ising spin orbit coupling acttogether.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[200.0, 10, 'T', 3]

CO
###Cooperative orbital moments and edge magnetoresistance in monolayer WTe$_2$|Arpit Arora,Li-kun Shi,Justin C. W. Song###
(149563, 149564)
 As weexplain, such large COM<missing VAR> magnitudes arise from an unconventional cooperativespin canting of edge spins when Rashba and Ising spin orbit coupling acttogether.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[187.0, 10, 'T', 3]

CO
###Cooperative orbital moments and edge magnetoresistance in monolayer WTe$_2$|Arpit Arora,Li-kun Shi,Justin C. W. Song###
(149613, 149614)
 Strikingly, COM<missing VAR> can compete with spin moments to produce an unusualanisotropic edge magnetoresistance oriented at an oblique angle.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 10, 'T', 2]

In
###Cooperative orbital moments and edge magnetoresistance in monolayer WTe$_2$|Arpit Arora,Li-kun Shi,Justin C. W. Song###
(149653, 149653)
 In particular,this competition produces a direction along which mathbfB is ineffectiveat gapping out the edge spectrum leaving it nearly gapless.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 10, 'T', 1]

B
###Cooperative orbital moments and edge magnetoresistance in monolayer WTe$_2$|Arpit Arora,Li-kun Shi,Justin C. W. Song###
(149674, 149674)
 In particular,this competition produces a direction along which mathbfB is ineffectiveat gapping out the edge spectrum leaving it nearly gapless.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 10, 'T', 1]

As
###Cooperative orbital moments and edge magnetoresistance in monolayer WTe$_2$|Arpit Arora,Li-kun Shi,Justin C. W. Song###
(149702, 149702)
 As a result, largecontrasts in gap sizes manifest as mathbfB is rotated granting giantanisotropic magnetoresistance of 0.1-10 million % at 10 T and low temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 10, 'T', 0]

B
###Cooperative orbital moments and edge magnetoresistance in monolayer WTe$_2$|Arpit Arora,Li-kun Shi,Justin C. W. Song###
(149725, 149725)
 As a result, largecontrasts in gap sizes manifest as mathbfB is rotated granting giantanisotropic magnetoresistance of 0.1-10 million % at 10 T and low temperature.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 10, 'T', 0]

CeAlGe
###Spin-lattice relaxation phenomena in the magnetic state of a suggested Weyl semimetal CeAlGe|Karan Singh,K. Mukherjee###
(149794, 149796)
Spin-lattice relaxation phenomena in the magnetic state of a suggested Weyl semimetal CeAlGe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 5.2, 'K', 2],[122.0, 0.5, 'Tesla', 3]

In
###Spin-lattice relaxation phenomena in the magnetic state of a suggested Weyl semimetal CeAlGe|Karan Singh,K. Mukherjee###
(149799, 149799)
 In this work we report the results of D<missing VAR>C susceptibility, AC susceptibilityand related technique, resistivity, transverse and longitudinalmagnetoresistance and heat capacity on polycrystalline magnetic semimetalCeAlGe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 5.2, 'K', 1],[119.0, 0.5, 'Tesla', 2]

C
###Spin-lattice relaxation phenomena in the magnetic state of a suggested Weyl semimetal CeAlGe|Karan Singh,K. Mukherjee###
(149816, 149816)
 In this work we report the results of D<missing VAR>C susceptibility, AC susceptibilityand related technique, resistivity, transverse and longitudinalmagnetoresistance and heat capacity on polycrystalline magnetic semimetalCeAlGe.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 5.2, 'K', 1],[102.0, 0.5, 'Tesla', 2]

C
###Spin-lattice relaxation phenomena in the magnetic state of a suggested Weyl semimetal CeAlGe|Karan Singh,K. Mukherjee###
(149822, 149822)
 In this work we report the results of D<missing VAR>C susceptibility, AC susceptibilityand related technique, resistivity, transverse and longitudinalmagnetoresistance and heat capacity on polycrystalline magnetic semimetalCeAlGe.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 5.2, 'K', 1],[96.0, 0.5, 'Tesla', 2]

CeAlGe
###Spin-lattice relaxation phenomena in the magnetic state of a suggested Weyl semimetal CeAlGe|Karan Singh,K. Mukherjee###
(149861, 149863)
 In this work we report the results of D<missing VAR>C susceptibility, AC susceptibilityand related technique, resistivity, transverse and longitudinalmagnetoresistance and heat capacity on polycrystalline magnetic semimetalCeAlGe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 5.2, 'K', 1],[55.0, 0.5, 'Tesla', 2]

At
###Spin-lattice relaxation phenomena in the magnetic state of a suggested Weyl semimetal CeAlGe|Karan Singh,K. Mukherjee###
(149921, 149921)
 At low field and temperature,frequency and AC field amplitude response of AC susceptibility indicate to thepresence of spin-lattice relaxation phenomena.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 5.2, 'K', 2],[3.0, 0.5, 'Tesla', 1]

C
###Spin-lattice relaxation phenomena in the magnetic state of a suggested Weyl semimetal CeAlGe|Karan Singh,K. Mukherjee###
(149938, 149938)
 At low field and temperature,frequency and AC field amplitude response of AC susceptibility indicate to thepresence of spin-lattice relaxation phenomena.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 5.2, 'K', 2],[20.0, 0.5, 'Tesla', 1]

C
###Spin-lattice relaxation phenomena in the magnetic state of a suggested Weyl semimetal CeAlGe|Karan Singh,K. Mukherjee###
(149949, 149949)
 At low field and temperature,frequency and AC field amplitude response of AC susceptibility indicate to thepresence of spin-lattice relaxation phenomena.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 5.2, 'K', 2],[31.0, 0.5, 'Tesla', 1]

Fe2
###Magnetoresistance scaling, disorder, `hot spots' and the origin of $T$-linear resistivity in BaFe$_2$(As$_{1-x}$P$_x$)$_2$|Nikola Maksimovic,Ian M. Hayes,Vikram Nagarajan,Alexei E. Koshelev,John Singleton,Yeonbae Lee,Thomas Schenkel,James G. Analytis###
(150129, 150130)
Magnetoresistance scaling, disorder, hot spots and the origin of T<missing VAR>-linear resistivity in BaFe2(As1-xPx)2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As1-xP
###Magnetoresistance scaling, disorder, `hot spots' and the origin of $T$-linear resistivity in BaFe$_2$(As$_{1-x}$P$_x$)$_2$|Nikola Maksimovic,Ian M. Hayes,Vikram Nagarajan,Alexei E. Koshelev,John Singleton,Yeonbae Lee,Thomas Schenkel,James G. Analytis###
(150132, 150136)
Magnetoresistance scaling, disorder, hot spots and the origin of T<missing VAR>-linear resistivity in BaFe2(As1-xPx)2.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

H
###Magnetoresistance scaling, disorder, `hot spots' and the origin of $T$-linear resistivity in BaFe$_2$(As$_{1-x}$P$_x$)$_2$|Nikola Maksimovic,Ian M. Hayes,Vikram Nagarajan,Alexei E. Koshelev,John Singleton,Yeonbae Lee,Thomas Schenkel,James G. Analytis###
(150148, 150148)
 The scaling of H-linear magnetoresistance in field and temperature wasmeasured in under-doped (x<missing VAR>  0.19) and optimally-doped(x<missing VAR>0.31)BaFe2(As1-xPx)2.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe2
###Magnetoresistance scaling, disorder, `hot spots' and the origin of $T$-linear resistivity in BaFe$_2$(As$_{1-x}$P$_x$)$_2$|Nikola Maksimovic,Ian M. Hayes,Vikram Nagarajan,Alexei E. Koshelev,John Singleton,Yeonbae Lee,Thomas Schenkel,James G. Analytis###
(150192, 150193)
 The scaling of H-linear magnetoresistance in field and temperature wasmeasured in under-doped (x<missing VAR>  0.19) and optimally-doped(x<missing VAR>0.31)BaFe2(As1-xPx)2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As1-xP
###Magnetoresistance scaling, disorder, `hot spots' and the origin of $T$-linear resistivity in BaFe$_2$(As$_{1-x}$P$_x$)$_2$|Nikola Maksimovic,Ian M. Hayes,Vikram Nagarajan,Alexei E. Koshelev,John Singleton,Yeonbae Lee,Thomas Schenkel,James G. Analytis###
(150195, 150199)
 The scaling of H-linear magnetoresistance in field and temperature wasmeasured in under-doped (x<missing VAR>  0.19) and optimally-doped(x<missing VAR>0.31)BaFe2(As1-xPx)2.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

InSb
###Hysteretic magnetoresistance in nanowire devices due to stray fields induced by micromagnets|Y. Jiang,E. J. de Jong,V. van de Sande,S. Gazibegovic,G. Badawy,E. P. A. M. Bakkers,S. M. Frolov###
(150458, 150459)
 We study hysteretic magnetoresistance in InSb nanowires due to stray magneticfields from CoFe micromagnets.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFe
###Hysteretic magnetoresistance in nanowire devices due to stray fields induced by micromagnets|Y. Jiang,E. J. de Jong,V. van de Sande,S. Gazibegovic,G. Badawy,E. P. A. M. Bakkers,S. M. Frolov###
(150476, 150477)
 We study hysteretic magnetoresistance in InSb nanowires due to stray magneticfields from CoFe micromagnets.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

InSb
###Hysteretic magnetoresistance in nanowire devices due to stray fields induced by micromagnets|Y. Jiang,E. J. de Jong,V. van de Sande,S. Gazibegovic,G. Badawy,E. P. A. M. Bakkers,S. M. Frolov###
(150503, 150504)
 Devices without any ferromagnetic componentsshow that the magnetoresistance of InSb nanowires commonly exhibits either alocal maximum or local minimum at zero magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Universal Behavior of Magnetoresistance in Organic Dirac Electron Systems|Ryotaro Kobara,Shin Igarashi,Yoshitaka Kawasugi,Ryusei Doi,Toshio Naito,Masafumi Tamura,Reizo Kato,Yutaka Nishio,Koji Kajita,Naoya Tajima###
(150790, 150790)
 In-plane magnetoresistance for organic massless Dirac electron system (OMDES)alpha-(BEDT-TTF)2I3 and theta-(BEDT-TTF)2I3 in addition topossible candidates of the OMDES alpha-(BETS)2I3 andalpha-(BEDT-ST<missing VAR>F)2I3, was investigated under hydrostatic pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Universal Behavior of Magnetoresistance in Organic Dirac Electron Systems|Ryotaro Kobara,Shin Igarashi,Yoshitaka Kawasugi,Ryusei Doi,Toshio Naito,Masafumi Tamura,Reizo Kato,Yutaka Nishio,Koji Kajita,Naoya Tajima###
(150809, 150809)
 In-plane magnetoresistance for organic massless Dirac electron system (OMDES)alpha-(BEDT-TTF)2I3 and theta-(BEDT-TTF)2I3 in addition topossible candidates of the OMDES alpha-(BETS)2I3 andalpha-(BEDT-ST<missing VAR>F)2I3, was investigated under hydrostatic pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Universal Behavior of Magnetoresistance in Organic Dirac Electron Systems|Ryotaro Kobara,Shin Igarashi,Yoshitaka Kawasugi,Ryusei Doi,Toshio Naito,Masafumi Tamura,Reizo Kato,Yutaka Nishio,Koji Kajita,Naoya Tajima###
(150813, 150813)
 In-plane magnetoresistance for organic massless Dirac electron system (OMDES)alpha-(BEDT-TTF)2I3 and theta-(BEDT-TTF)2I3 in addition topossible candidates of the OMDES alpha-(BETS)2I3 andalpha-(BEDT-ST<missing VAR>F)2I3, was investigated under hydrostatic pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Universal Behavior of Magnetoresistance in Organic Dirac Electron Systems|Ryotaro Kobara,Shin Igarashi,Yoshitaka Kawasugi,Ryusei Doi,Toshio Naito,Masafumi Tamura,Reizo Kato,Yutaka Nishio,Koji Kajita,Naoya Tajima###
(150820, 150820)
 In-plane magnetoresistance for organic massless Dirac electron system (OMDES)alpha-(BEDT-TTF)2I3 and theta-(BEDT-TTF)2I3 in addition topossible candidates of the OMDES alpha-(BETS)2I3 andalpha-(BEDT-ST<missing VAR>F)2I3, was investigated under hydrostatic pressure.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Universal Behavior of Magnetoresistance in Organic Dirac Electron Systems|Ryotaro Kobara,Shin Igarashi,Yoshitaka Kawasugi,Ryusei Doi,Toshio Naito,Masafumi Tamura,Reizo Kato,Yutaka Nishio,Koji Kajita,Naoya Tajima###
(150827, 150827)
 In-plane magnetoresistance for organic massless Dirac electron system (OMDES)alpha-(BEDT-TTF)2I3 and theta-(BEDT-TTF)2I3 in addition topossible candidates of the OMDES alpha-(BETS)2I3 andalpha-(BEDT-ST<missing VAR>F)2I3, was investigated under hydrostatic pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I3
###Universal Behavior of Magnetoresistance in Organic Dirac Electron Systems|Ryotaro Kobara,Shin Igarashi,Yoshitaka Kawasugi,Ryusei Doi,Toshio Naito,Masafumi Tamura,Reizo Kato,Yutaka Nishio,Koji Kajita,Naoya Tajima###
(150830, 150831)
 In-plane magnetoresistance for organic massless Dirac electron system (OMDES)alpha-(BEDT-TTF)2I3 and theta-(BEDT-TTF)2I3 in addition topossible candidates of the OMDES alpha-(BETS)2I3 andalpha-(BEDT-ST<missing VAR>F)2I3, was investigated under hydrostatic pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Universal Behavior of Magnetoresistance in Organic Dirac Electron Systems|Ryotaro Kobara,Shin Igarashi,Yoshitaka Kawasugi,Ryusei Doi,Toshio Naito,Masafumi Tamura,Reizo Kato,Yutaka Nishio,Koji Kajita,Naoya Tajima###
(150838, 150838)
 In-plane magnetoresistance for organic massless Dirac electron system (OMDES)alpha-(BEDT-TTF)2I3 and theta-(BEDT-TTF)2I3 in addition topossible candidates of the OMDES alpha-(BETS)2I3 andalpha-(BEDT-ST<missing VAR>F)2I3, was investigated under hydrostatic pressure.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Universal Behavior of Magnetoresistance in Organic Dirac Electron Systems|Ryotaro Kobara,Shin Igarashi,Yoshitaka Kawasugi,Ryusei Doi,Toshio Naito,Masafumi Tamura,Reizo Kato,Yutaka Nishio,Koji Kajita,Naoya Tajima###
(150845, 150845)
 In-plane magnetoresistance for organic massless Dirac electron system (OMDES)alpha-(BEDT-TTF)2I3 and theta-(BEDT-TTF)2I3 in addition topossible candidates of the OMDES alpha-(BETS)2I3 andalpha-(BEDT-ST<missing VAR>F)2I3, was investigated under hydrostatic pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I3
###Universal Behavior of Magnetoresistance in Organic Dirac Electron Systems|Ryotaro Kobara,Shin Igarashi,Yoshitaka Kawasugi,Ryusei Doi,Toshio Naito,Masafumi Tamura,Reizo Kato,Yutaka Nishio,Koji Kajita,Naoya Tajima###
(150848, 150849)
 In-plane magnetoresistance for organic massless Dirac electron system (OMDES)alpha-(BEDT-TTF)2I3 and theta-(BEDT-TTF)2I3 in addition topossible candidates of the OMDES alpha-(BETS)2I3 andalpha-(BEDT-ST<missing VAR>F)2I3, was investigated under hydrostatic pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Universal Behavior of Magnetoresistance in Organic Dirac Electron Systems|Ryotaro Kobara,Shin Igarashi,Yoshitaka Kawasugi,Ryusei Doi,Toshio Naito,Masafumi Tamura,Reizo Kato,Yutaka Nishio,Koji Kajita,Naoya Tajima###
(150866, 150866)
 In-plane magnetoresistance for organic massless Dirac electron system (OMDES)alpha-(BEDT-TTF)2I3 and theta-(BEDT-TTF)2I3 in addition topossible candidates of the OMDES alpha-(BETS)2I3 andalpha-(BEDT-ST<missing VAR>F)2I3, was investigated under hydrostatic pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Universal Behavior of Magnetoresistance in Organic Dirac Electron Systems|Ryotaro Kobara,Shin Igarashi,Yoshitaka Kawasugi,Ryusei Doi,Toshio Naito,Masafumi Tamura,Reizo Kato,Yutaka Nishio,Koji Kajita,Naoya Tajima###
(150870, 150870)
 In-plane magnetoresistance for organic massless Dirac electron system (OMDES)alpha-(BEDT-TTF)2I3 and theta-(BEDT-TTF)2I3 in addition topossible candidates of the OMDES alpha-(BETS)2I3 andalpha-(BEDT-ST<missing VAR>F)2I3, was investigated under hydrostatic pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Universal Behavior of Magnetoresistance in Organic Dirac Electron Systems|Ryotaro Kobara,Shin Igarashi,Yoshitaka Kawasugi,Ryusei Doi,Toshio Naito,Masafumi Tamura,Reizo Kato,Yutaka Nishio,Koji Kajita,Naoya Tajima###
(150875, 150875)
 In-plane magnetoresistance for organic massless Dirac electron system (OMDES)alpha-(BEDT-TTF)2I3 and theta-(BEDT-TTF)2I3 in addition topossible candidates of the OMDES alpha-(BETS)2I3 andalpha-(BEDT-ST<missing VAR>F)2I3, was investigated under hydrostatic pressure.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Universal Behavior of Magnetoresistance in Organic Dirac Electron Systems|Ryotaro Kobara,Shin Igarashi,Yoshitaka Kawasugi,Ryusei Doi,Toshio Naito,Masafumi Tamura,Reizo Kato,Yutaka Nishio,Koji Kajita,Naoya Tajima###
(150878, 150878)
 In-plane magnetoresistance for organic massless Dirac electron system (OMDES)alpha-(BEDT-TTF)2I3 and theta-(BEDT-TTF)2I3 in addition topossible candidates of the OMDES alpha-(BETS)2I3 andalpha-(BEDT-ST<missing VAR>F)2I3, was investigated under hydrostatic pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I3
###Universal Behavior of Magnetoresistance in Organic Dirac Electron Systems|Ryotaro Kobara,Shin Igarashi,Yoshitaka Kawasugi,Ryusei Doi,Toshio Naito,Masafumi Tamura,Reizo Kato,Yutaka Nishio,Koji Kajita,Naoya Tajima###
(150881, 150882)
 In-plane magnetoresistance for organic massless Dirac electron system (OMDES)alpha-(BEDT-TTF)2I3 and theta-(BEDT-TTF)2I3 in addition topossible candidates of the OMDES alpha-(BETS)2I3 andalpha-(BEDT-ST<missing VAR>F)2I3, was investigated under hydrostatic pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Universal Behavior of Magnetoresistance in Organic Dirac Electron Systems|Ryotaro Kobara,Shin Igarashi,Yoshitaka Kawasugi,Ryusei Doi,Toshio Naito,Masafumi Tamura,Reizo Kato,Yutaka Nishio,Koji Kajita,Naoya Tajima###
(150890, 150890)
 In-plane magnetoresistance for organic massless Dirac electron system (OMDES)alpha-(BEDT-TTF)2I3 and theta-(BEDT-TTF)2I3 in addition topossible candidates of the OMDES alpha-(BETS)2I3 andalpha-(BEDT-ST<missing VAR>F)2I3, was investigated under hydrostatic pressure.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Universal Behavior of Magnetoresistance in Organic Dirac Electron Systems|Ryotaro Kobara,Shin Igarashi,Yoshitaka Kawasugi,Ryusei Doi,Toshio Naito,Masafumi Tamura,Reizo Kato,Yutaka Nishio,Koji Kajita,Naoya Tajima###
(150895, 150895)
 In-plane magnetoresistance for organic massless Dirac electron system (OMDES)alpha-(BEDT-TTF)2I3 and theta-(BEDT-TTF)2I3 in addition topossible candidates of the OMDES alpha-(BETS)2I3 andalpha-(BEDT-ST<missing VAR>F)2I3, was investigated under hydrostatic pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Universal Behavior of Magnetoresistance in Organic Dirac Electron Systems|Ryotaro Kobara,Shin Igarashi,Yoshitaka Kawasugi,Ryusei Doi,Toshio Naito,Masafumi Tamura,Reizo Kato,Yutaka Nishio,Koji Kajita,Naoya Tajima###
(150897, 150897)
 In-plane magnetoresistance for organic massless Dirac electron system (OMDES)alpha-(BEDT-TTF)2I3 and theta-(BEDT-TTF)2I3 in addition topossible candidates of the OMDES alpha-(BETS)2I3 andalpha-(BEDT-ST<missing VAR>F)2I3, was investigated under hydrostatic pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I3
###Universal Behavior of Magnetoresistance in Organic Dirac Electron Systems|Ryotaro Kobara,Shin Igarashi,Yoshitaka Kawasugi,Ryusei Doi,Toshio Naito,Masafumi Tamura,Reizo Kato,Yutaka Nishio,Koji Kajita,Naoya Tajima###
(150900, 150901)
 In-plane magnetoresistance for organic massless Dirac electron system (OMDES)alpha-(BEDT-TTF)2I3 and theta-(BEDT-TTF)2I3 in addition topossible candidates of the OMDES alpha-(BETS)2I3 andalpha-(BEDT-ST<missing VAR>F)2I3, was investigated under hydrostatic pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Universal Behavior of Magnetoresistance in Organic Dirac Electron Systems|Ryotaro Kobara,Shin Igarashi,Yoshitaka Kawasugi,Ryusei Doi,Toshio Naito,Masafumi Tamura,Reizo Kato,Yutaka Nishio,Koji Kajita,Naoya Tajima###
(150960, 150960)
 As foralpha-(BEDT-TTF)2I3, the universality was examined with the parametersof temperature, magnetic field and its direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Universal Behavior of Magnetoresistance in Organic Dirac Electron Systems|Ryotaro Kobara,Shin Igarashi,Yoshitaka Kawasugi,Ryusei Doi,Toshio Naito,Masafumi Tamura,Reizo Kato,Yutaka Nishio,Koji Kajita,Naoya Tajima###
(150968, 150968)
 As foralpha-(BEDT-TTF)2I3, the universality was examined with the parametersof temperature, magnetic field and its direction.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Universal Behavior of Magnetoresistance in Organic Dirac Electron Systems|Ryotaro Kobara,Shin Igarashi,Yoshitaka Kawasugi,Ryusei Doi,Toshio Naito,Masafumi Tamura,Reizo Kato,Yutaka Nishio,Koji Kajita,Naoya Tajima###
(150975, 150975)
 As foralpha-(BEDT-TTF)2I3, the universality was examined with the parametersof temperature, magnetic field and its direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I3
###Universal Behavior of Magnetoresistance in Organic Dirac Electron Systems|Ryotaro Kobara,Shin Igarashi,Yoshitaka Kawasugi,Ryusei Doi,Toshio Naito,Masafumi Tamura,Reizo Kato,Yutaka Nishio,Koji Kajita,Naoya Tajima###
(150978, 150979)
 As foralpha-(BEDT-TTF)2I3, the universality was examined with the parametersof temperature, magnetic field and its direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Universal Behavior of Magnetoresistance in Organic Dirac Electron Systems|Ryotaro Kobara,Shin Igarashi,Yoshitaka Kawasugi,Ryusei Doi,Toshio Naito,Masafumi Tamura,Reizo Kato,Yutaka Nishio,Koji Kajita,Naoya Tajima###
(151048, 151048)
 We suggest that the universalmagnetoresistance behavior is found even for the gapped state ofalpha-(BEDT-TTF)2I3 under intermediate pressure, when the thermalenergy exceeds the gap.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Universal Behavior of Magnetoresistance in Organic Dirac Electron Systems|Ryotaro Kobara,Shin Igarashi,Yoshitaka Kawasugi,Ryusei Doi,Toshio Naito,Masafumi Tamura,Reizo Kato,Yutaka Nishio,Koji Kajita,Naoya Tajima###
(151055, 151055)
 We suggest that the universalmagnetoresistance behavior is found even for the gapped state ofalpha-(BEDT-TTF)2I3 under intermediate pressure, when the thermalenergy exceeds the gap.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I3
###Universal Behavior of Magnetoresistance in Organic Dirac Electron Systems|Ryotaro Kobara,Shin Igarashi,Yoshitaka Kawasugi,Ryusei Doi,Toshio Naito,Masafumi Tamura,Reizo Kato,Yutaka Nishio,Koji Kajita,Naoya Tajima###
(151058, 151059)
 We suggest that the universalmagnetoresistance behavior is found even for the gapped state ofalpha-(BEDT-TTF)2I3 under intermediate pressure, when the thermalenergy exceeds the gap.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TbPtBi
###Anomalous Hall effect and negative longitudinal magnetoresistance in half-Heusler topological semimetal candidates TbPtBi and HoPtBi|Orest Pavlosiuk,Patryk Fałat,Dariusz Kaczorowski,Piotr Wiśniewski###
(151118, 151120)
Anomalous Hall effect and negative longitudinal magnetoresistance in half-Heusler topological semimetal candidates TbPtBi and HoPtBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[174.0, 14, 'T', 3],[236.0, 0.18, ',', 4],[244.0, 0.27, ',', 4]

HoPtBi
###Anomalous Hall effect and negative longitudinal magnetoresistance in half-Heusler topological semimetal candidates TbPtBi and HoPtBi|Orest Pavlosiuk,Patryk Fałat,Dariusz Kaczorowski,Piotr Wiśniewski###
(151124, 151126)
Anomalous Hall effect and negative longitudinal magnetoresistance in half-Heusler topological semimetal candidates TbPtBi and HoPtBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[168.0, 14, 'T', 3],[230.0, 0.18, ',', 4],[238.0, 0.27, ',', 4]

TbPtBi
###Anomalous Hall effect and negative longitudinal magnetoresistance in half-Heusler topological semimetal candidates TbPtBi and HoPtBi|Orest Pavlosiuk,Patryk Fałat,Dariusz Kaczorowski,Piotr Wiśniewski###
(151211, 151213)
 We thoroughly investigated the magnetotransportproperties of high-quality single crystals of two half-Heusler phases, TbPtBiand HoPtBi, in pursuit of the characteristic features of topologicallynon-trivial electronic states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 14, 'T', 1],[143.0, 0.18, ',', 2],[151.0, 0.27, ',', 2]

HoPtBi
###Anomalous Hall effect and negative longitudinal magnetoresistance in half-Heusler topological semimetal candidates TbPtBi and HoPtBi|Orest Pavlosiuk,Patryk Fałat,Dariusz Kaczorowski,Piotr Wiśniewski###
(151218, 151220)
 We thoroughly investigated the magnetotransportproperties of high-quality single crystals of two half-Heusler phases, TbPtBiand HoPtBi, in pursuit of the characteristic features of topologicallynon-trivial electronic states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 14, 'T', 1],[136.0, 0.18, ',', 2],[144.0, 0.27, ',', 2]

HoPtBi
###Anomalous Hall effect and negative longitudinal magnetoresistance in half-Heusler topological semimetal candidates TbPtBi and HoPtBi|Orest Pavlosiuk,Patryk Fałat,Dariusz Kaczorowski,Piotr Wiśniewski###
(151297, 151299)
 HoPtBi demonstrates the Shubnikov-de Haas effectwith two principal frequencies, indicating a complex Fermi surface; theextracted values of carrier effective masses are rather small, 0.18,me and0.27,me.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 14, 'T', 1],[57.0, 0.18, ',', 0],[65.0, 0.27, ',', 0]

HoPtBi
###Anomalous Hall effect and negative longitudinal magnetoresistance in half-Heusler topological semimetal candidates TbPtBi and HoPtBi|Orest Pavlosiuk,Patryk Fałat,Dariusz Kaczorowski,Piotr Wiśniewski###
(151430, 151432)
 Both compounds show strongly anisotropic magnetoresistance,that in HoPtBi exhibits a butterfly-like behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 14, 'T', 3],[74.0, 0.18, ',', 2],[66.0, 0.27, ',', 2]

O
###Anisotropic magnetoresistance and memory effect in bulk systems with extended defects|K. S. Denisov,K. A. Baryshnikov,P. S. Alekseev,N. S. Averkiev###
(151519, 151519)
 Memory effects can have a profound impact on the resistivity of semiconductorsystems, resulting in giant negative magnetoresistance and MIRO phenomena.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 3, 'D', 1]

TbCo
###A two-terminal spin valve device controlled by spin-orbit torques with enhanced giant magnetoresistance|Can Onur Avci,Charles-Henri Lambert,Giacomo Sala,Pietro Gambardella###
(151871, 151872)
 The device consists of perpendicularly magnetizedTbCo and Co layers separated by a Pt or Cu spacer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[202.0, 0.02, '%', 3],[208.0, 6, '%', 3]

Co
###A two-terminal spin valve device controlled by spin-orbit torques with enhanced giant magnetoresistance|Can Onur Avci,Charles-Henri Lambert,Giacomo Sala,Pietro Gambardella###
(151876, 151876)
 The device consists of perpendicularly magnetizedTbCo and Co layers separated by a Pt or Cu spacer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[198.0, 0.02, '%', 3],[204.0, 6, '%', 3]

Pt
###A two-terminal spin valve device controlled by spin-orbit torques with enhanced giant magnetoresistance|Can Onur Avci,Charles-Henri Lambert,Giacomo Sala,Pietro Gambardella###
(151886, 151886)
 The device consists of perpendicularly magnetizedTbCo and Co layers separated by a Pt or Cu spacer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 0.02, '%', 3],[194.0, 6, '%', 3]

Cu
###A two-terminal spin valve device controlled by spin-orbit torques with enhanced giant magnetoresistance|Can Onur Avci,Charles-Henri Lambert,Giacomo Sala,Pietro Gambardella###
(151890, 151890)
 The device consists of perpendicularly magnetizedTbCo and Co layers separated by a Pt or Cu spacer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[184.0, 0.02, '%', 3],[190.0, 6, '%', 3]

Co
###A two-terminal spin valve device controlled by spin-orbit torques with enhanced giant magnetoresistance|Can Onur Avci,Charles-Henri Lambert,Giacomo Sala,Pietro Gambardella###
(151926, 151926)
 Current injection throughsuch layers exerts spin-orbit torques and switches the magnetization of the Colayer while the TbCo magnetization remains fixed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 0.02, '%', 2],[154.0, 6, '%', 2]

TbCo
###A two-terminal spin valve device controlled by spin-orbit torques with enhanced giant magnetoresistance|Can Onur Avci,Charles-Henri Lambert,Giacomo Sala,Pietro Gambardella###
(151935, 151936)
 Current injection throughsuch layers exerts spin-orbit torques and switches the magnetization of the Colayer while the TbCo magnetization remains fixed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 0.02, '%', 2],[144.0, 6, '%', 2]

Co
###A two-terminal spin valve device controlled by spin-orbit torques with enhanced giant magnetoresistance|Can Onur Avci,Charles-Henri Lambert,Giacomo Sala,Pietro Gambardella###
(151977, 151977)
 Subsequent current injectionof lower amplitude senses the relative orientation of the magnetization of theCo and TbCo layers, which results in two distinct resistance levels forparallel and antiparallel alignment due to the current-in-plane giantmagnetoresistance effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 0.02, '%', 1],[103.0, 6, '%', 1]

TbCo
###A two-terminal spin valve device controlled by spin-orbit torques with enhanced giant magnetoresistance|Can Onur Avci,Charles-Henri Lambert,Giacomo Sala,Pietro Gambardella###
(151981, 151982)
 Subsequent current injectionof lower amplitude senses the relative orientation of the magnetization of theCo and TbCo layers, which results in two distinct resistance levels forparallel and antiparallel alignment due to the current-in-plane giantmagnetoresistance effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 0.02, '%', 1],[98.0, 6, '%', 1]

TbCo
###A two-terminal spin valve device controlled by spin-orbit torques with enhanced giant magnetoresistance|Can Onur Avci,Charles-Henri Lambert,Giacomo Sala,Pietro Gambardella###
(152057, 152058)
 We further show that the giant magnetoresistance ofdevices including a single TbCo/spacer/Co trilayer can be improved from 0.02%to 6% by using a Cu spacer instead of Pt.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 0.02, '%', 0],[22.0, 6, '%', 0]

Co
###A two-terminal spin valve device controlled by spin-orbit torques with enhanced giant magnetoresistance|Can Onur Avci,Charles-Henri Lambert,Giacomo Sala,Pietro Gambardella###
(152062, 152062)
 We further show that the giant magnetoresistance ofdevices including a single TbCo/spacer/Co trilayer can be improved from 0.02%to 6% by using a Cu spacer instead of Pt.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 0.02, '%', 0],[18.0, 6, '%', 0]

Cu
###A two-terminal spin valve device controlled by spin-orbit torques with enhanced giant magnetoresistance|Can Onur Avci,Charles-Henri Lambert,Giacomo Sala,Pietro Gambardella###
(152089, 152089)
 We further show that the giant magnetoresistance ofdevices including a single TbCo/spacer/Co trilayer can be improved from 0.02%to 6% by using a Cu spacer instead of Pt.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 0.02, '%', 0],[9.0, 6, '%', 0]

Pt
###A two-terminal spin valve device controlled by spin-orbit torques with enhanced giant magnetoresistance|Can Onur Avci,Charles-Henri Lambert,Giacomo Sala,Pietro Gambardella###
(152097, 152097)
 We further show that the giant magnetoresistance ofdevices including a single TbCo/spacer/Co trilayer can be improved from 0.02%to 6% by using a Cu spacer instead of Pt.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 0.02, '%', 0],[17.0, 6, '%', 0]

TmB12
###Evidence of symmetry lowering in antiferromagnetic metal TmB12 with dynamic charge stripes|A. Azarevich,V. Glushkov,S. Demishev,A. Bogach,V. Voronov,S. Gavrilkin,N. Shitsevalova,V. Filipov,S. Gabani,J. Kacmarcik,K. Flachbart,N. Sluchanko###
(152167, 152169)
Evidence of symmetry lowering in antiferromagnetic metal TmB12 with dynamic charge stripes.
Featurization terminated normally.
0,0,0,0,0.9230769230769231,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[192.0, 110, 'directions', 2]

TmB12
###Evidence of symmetry lowering in antiferromagnetic metal TmB12 with dynamic charge stripes|A. Azarevich,V. Glushkov,S. Demishev,A. Bogach,V. Voronov,S. Gavrilkin,N. Shitsevalova,V. Filipov,S. Gabani,J. Kacmarcik,K. Flachbart,N. Sluchanko###
(152248, 152250)
 Precise angle-resolved magnetoresistance and magnetization measurements haverevealed (i) strong charge transport and magnetic anisotropy and (ii) emergenceof a huge number of magnetic phases in the ground state of TmB12antiferromagnetic metal with fcc crystal structure and dynamic charge stripes.
Featurization terminated normally.
0,0,0,0,0.9230769230769231,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 110, 'directions', 1]

H
###Evidence of symmetry lowering in antiferromagnetic metal TmB12 with dynamic charge stripes|A. Azarevich,V. Glushkov,S. Demishev,A. Bogach,V. Voronov,S. Gavrilkin,N. Shitsevalova,V. Filipov,S. Gabani,J. Kacmarcik,K. Flachbart,N. Sluchanko###
(152283, 152283)
By analyzing the angular H-fi magnetic phase diagrams reconstructed fromexperimental angle-resolved magnetoresistance and magnetization data we arguethat the symmetry lowering is a consequence of suppression of the indirectRuderman- Kittel-Kasuya-Yosida (R<missing VAR>KKY) exchange along 110 directions betweennearest neighboring magnetic moments of Tm3 ions and subsequent redistributionof conduction electrons to quantum fluctuations of the electron density(stripes).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 110, 'directions', 0]

Y
###Evidence of symmetry lowering in antiferromagnetic metal TmB12 with dynamic charge stripes|A. Azarevich,V. Glushkov,S. Demishev,A. Bogach,V. Voronov,S. Gavrilkin,N. Shitsevalova,V. Filipov,S. Gabani,J. Kacmarcik,K. Flachbart,N. Sluchanko###
(152355, 152355)
By analyzing the angular H-fi magnetic phase diagrams reconstructed fromexperimental angle-resolved magnetoresistance and magnetization data we arguethat the symmetry lowering is a consequence of suppression of the indirectRuderman- Kittel-Kasuya-Yosida (R<missing VAR>KKY) exchange along 110 directions betweennearest neighboring magnetic moments of Tm3 ions and subsequent redistributionof conduction electrons to quantum fluctuations of the electron density(stripes).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 110, 'directions', 0]

Tm3
###Evidence of symmetry lowering in antiferromagnetic metal TmB12 with dynamic charge stripes|A. Azarevich,V. Glushkov,S. Demishev,A. Bogach,V. Voronov,S. Gavrilkin,N. Shitsevalova,V. Filipov,S. Gabani,J. Kacmarcik,K. Flachbart,N. Sluchanko###
(152376, 152377)
By analyzing the angular H-fi magnetic phase diagrams reconstructed fromexperimental angle-resolved magnetoresistance and magnetization data we arguethat the symmetry lowering is a consequence of suppression of the indirectRuderman- Kittel-Kasuya-Yosida (R<missing VAR>KKY) exchange along 110 directions betweennearest neighboring magnetic moments of Tm3 ions and subsequent redistributionof conduction electrons to quantum fluctuations of the electron density(stripes).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 110, 'directions', 0]

Tm3
###Evidence of symmetry lowering in antiferromagnetic metal TmB12 with dynamic charge stripes|A. Azarevich,V. Glushkov,S. Demishev,A. Bogach,V. Voronov,S. Gavrilkin,N. Shitsevalova,V. Filipov,S. Gabani,J. Kacmarcik,K. Flachbart,N. Sluchanko###
(152459, 152460)
 Magnetoresistance components are discussed in terms of chargescattering on the spin density wave, itinerant ferromagnetic nano-domains andon-site Tm3 spin fluctuations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 110, 'directions', 1]

Pt
###Electrical detection of the spin-flop and room-temperature magnetic ordering in van der Waals CrPS$_{4}$/(Pt, Pd) heterostructures|Rui Wu,Andrew Ross,Shilei Ding,Yuxuan Peng,Fangge He,Yi Ren,Romain Lebrun,Yong Wu,Zhen Wang,Jinbo Yang,Arne Brataas,Mathias Kläui###
(152511, 152511)
Electrical detection of the spin-flop and room-temperature magnetic ordering in van der Waals CrPS4/(Pt, Pd) heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pd
###Electrical detection of the spin-flop and room-temperature magnetic ordering in van der Waals CrPS$_{4}$/(Pt, Pd) heterostructures|Rui Wu,Andrew Ross,Shilei Ding,Yuxuan Peng,Fangge He,Yi Ren,Romain Lebrun,Yong Wu,Zhen Wang,Jinbo Yang,Arne Brataas,Mathias Kläui###
(152514, 152514)
Electrical detection of the spin-flop and room-temperature magnetic ordering in van der Waals CrPS4/(Pt, Pd) heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CrPS4
###Electrical detection of the spin-flop and room-temperature magnetic ordering in van der Waals CrPS$_{4}$/(Pt, Pd) heterostructures|Rui Wu,Andrew Ross,Shilei Ding,Yuxuan Peng,Fangge He,Yi Ren,Romain Lebrun,Yong Wu,Zhen Wang,Jinbo Yang,Arne Brataas,Mathias Kläui###
(152547, 152550)
 We study magneto-transport in heterostructures composed of the van der Waalsantiferromagnet CrPS4 and the heavy metals Pt and Pd.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0.6666666666666666,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Electrical detection of the spin-flop and room-temperature magnetic ordering in van der Waals CrPS$_{4}$/(Pt, Pd) heterostructures|Rui Wu,Andrew Ross,Shilei Ding,Yuxuan Peng,Fangge He,Yi Ren,Romain Lebrun,Yong Wu,Zhen Wang,Jinbo Yang,Arne Brataas,Mathias Kläui###
(152560, 152560)
 We study magneto-transport in heterostructures composed of the van der Waalsantiferromagnet CrPS4 and the heavy metals Pt and Pd.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pd
###Electrical detection of the spin-flop and room-temperature magnetic ordering in van der Waals CrPS$_{4}$/(Pt, Pd) heterostructures|Rui Wu,Andrew Ross,Shilei Ding,Yuxuan Peng,Fangge He,Yi Ren,Romain Lebrun,Yong Wu,Zhen Wang,Jinbo Yang,Arne Brataas,Mathias Kläui###
(152564, 152564)
 We study magneto-transport in heterostructures composed of the van der Waalsantiferromagnet CrPS4 and the heavy metals Pt and Pd.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CrPS4
###Electrical detection of the spin-flop and room-temperature magnetic ordering in van der Waals CrPS$_{4}$/(Pt, Pd) heterostructures|Rui Wu,Andrew Ross,Shilei Ding,Yuxuan Peng,Fangge He,Yi Ren,Romain Lebrun,Yong Wu,Zhen Wang,Jinbo Yang,Arne Brataas,Mathias Kläui###
(152593, 152596)
 The transverseresistance (R<missing VAR>xy) signal reveals the spin-flop transition of CrPS4 anda strongly enhanced magnetic ordering temperature (>300 K), which mightoriginate from a strong spin-orbit coupling at the interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0.6666666666666666,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Electrical detection of the spin-flop and room-temperature magnetic ordering in van der Waals CrPS$_{4}$/(Pt, Pd) heterostructures|Rui Wu,Andrew Ross,Shilei Ding,Yuxuan Peng,Fangge He,Yi Ren,Romain Lebrun,Yong Wu,Zhen Wang,Jinbo Yang,Arne Brataas,Mathias Kläui###
(152617, 152617)
 The transverseresistance (R<missing VAR>xy) signal reveals the spin-flop transition of CrPS4 anda strongly enhanced magnetic ordering temperature (>300 K), which mightoriginate from a strong spin-orbit coupling at the interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CrPS4/Pt
###Electrical detection of the spin-flop and room-temperature magnetic ordering in van der Waals CrPS$_{4}$/(Pt, Pd) heterostructures|Rui Wu,Andrew Ross,Shilei Ding,Yuxuan Peng,Fangge He,Yi Ren,Romain Lebrun,Yong Wu,Zhen Wang,Jinbo Yang,Arne Brataas,Mathias Kläui###
(152650, 152655)
 WhileCrPS4/Pt devices allow for easy detection of the spin-flop transition,CrPS4/Pd devices show a more substantial enhancement in magnetic orderingtemperature and exhibit a topological Hall effect signal, possibly related tochiral spin structures at the interface.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

CrPS4/Pd
###Electrical detection of the spin-flop and room-temperature magnetic ordering in van der Waals CrPS$_{4}$/(Pt, Pd) heterostructures|Rui Wu,Andrew Ross,Shilei Ding,Yuxuan Peng,Fangge He,Yi Ren,Romain Lebrun,Yong Wu,Zhen Wang,Jinbo Yang,Arne Brataas,Mathias Kläui###
(152679, 152684)
 WhileCrPS4/Pt devices allow for easy detection of the spin-flop transition,CrPS4/Pd devices show a more substantial enhancement in magnetic orderingtemperature and exhibit a topological Hall effect signal, possibly related tochiral spin structures at the interface.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

CrPS4
###Electrical detection of the spin-flop and room-temperature magnetic ordering in van der Waals CrPS$_{4}$/(Pt, Pd) heterostructures|Rui Wu,Andrew Ross,Shilei Ding,Yuxuan Peng,Fangge He,Yi Ren,Romain Lebrun,Yong Wu,Zhen Wang,Jinbo Yang,Arne Brataas,Mathias Kläui###
(152810, 152813)
 The longitudinal magnetoresistance(R<missing VAR>xx) results from a combination of spin-Hall magnetoresistance and thenegative magnetoresistance that can be explained by a field-induced change ofthe electronic band structure of CrPS4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0.6666666666666666,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Perpendicular magnetic tunnel junctions with multi-interface free layer|Pravin Khanal,Bowei Zhou,Magda Andrade,Yanliu Dang,Albert Davydov,Ali Habiboglu,Jonah Saidian,Adam Laurie,Jian-Ping Wang,Daniel B Gopman,Weigang Wang###
(152958, 152959)
 Different nonmagnetic materials (MgO, Ta, Mo) have been employed asthe coupling layers in these multi-interface free layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 10, 'nm', 2],[133.0, 200, '%', 3]

Ta
###Perpendicular magnetic tunnel junctions with multi-interface free layer|Pravin Khanal,Bowei Zhou,Magda Andrade,Yanliu Dang,Albert Davydov,Ali Habiboglu,Jonah Saidian,Adam Laurie,Jian-Ping Wang,Daniel B Gopman,Weigang Wang###
(152962, 152962)
 Different nonmagnetic materials (MgO, Ta, Mo) have been employed asthe coupling layers in these multi-interface free layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 10, 'nm', 2],[130.0, 200, '%', 3]

Mo
###Perpendicular magnetic tunnel junctions with multi-interface free layer|Pravin Khanal,Bowei Zhou,Magda Andrade,Yanliu Dang,Albert Davydov,Ali Habiboglu,Jonah Saidian,Adam Laurie,Jian-Ping Wang,Daniel B Gopman,Weigang Wang###
(152965, 152965)
 Different nonmagnetic materials (MgO, Ta, Mo) have been employed asthe coupling layers in these multi-interface free layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 10, 'nm', 2],[127.0, 200, '%', 3]

CoFeB
###Perpendicular magnetic tunnel junctions with multi-interface free layer|Pravin Khanal,Bowei Zhou,Magda Andrade,Yanliu Dang,Albert Davydov,Ali Habiboglu,Jonah Saidian,Adam Laurie,Jian-Ping Wang,Daniel B Gopman,Weigang Wang###
(153046, 153048)
 Astrong dependence of tunneling magnetoresistance on the thickness of the firstCoFeB layer has been observed.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 10, 'nm', 4],[44.0, 200, '%', 1]

In
###Perpendicular magnetic tunnel junctions with multi-interface free layer|Pravin Khanal,Bowei Zhou,Magda Andrade,Yanliu Dang,Albert Davydov,Ali Habiboglu,Jonah Saidian,Adam Laurie,Jian-Ping Wang,Daniel B Gopman,Weigang Wang###
(153059, 153059)
 In junctions where Mo and MgO are used ascoupling layers, large tunneling magnetoresistance above 200% has been achievedafter 400degC annealing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[159.0, 10, 'nm', 5],[33.0, 200, '%', 0]

Mo
###Perpendicular magnetic tunnel junctions with multi-interface free layer|Pravin Khanal,Bowei Zhou,Magda Andrade,Yanliu Dang,Albert Davydov,Ali Habiboglu,Jonah Saidian,Adam Laurie,Jian-Ping Wang,Daniel B Gopman,Weigang Wang###
(153065, 153065)
 In junctions where Mo and MgO are used ascoupling layers, large tunneling magnetoresistance above 200% has been achievedafter 400degC annealing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 10, 'nm', 5],[27.0, 200, '%', 0]

MgO
###Perpendicular magnetic tunnel junctions with multi-interface free layer|Pravin Khanal,Bowei Zhou,Magda Andrade,Yanliu Dang,Albert Davydov,Ali Habiboglu,Jonah Saidian,Adam Laurie,Jian-Ping Wang,Daniel B Gopman,Weigang Wang###
(153069, 153070)
 In junctions where Mo and MgO are used ascoupling layers, large tunneling magnetoresistance above 200% has been achievedafter 400degC annealing.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 10, 'nm', 5],[22.0, 200, '%', 0]

C
###Perpendicular magnetic tunnel junctions with multi-interface free layer|Pravin Khanal,Bowei Zhou,Magda Andrade,Yanliu Dang,Albert Davydov,Ali Habiboglu,Jonah Saidian,Adam Laurie,Jian-Ping Wang,Daniel B Gopman,Weigang Wang###
(153106, 153106)
 In junctions where Mo and MgO are used ascoupling layers, large tunneling magnetoresistance above 200% has been achievedafter 400degC annealing.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[206.0, 10, 'nm', 5],[14.0, 200, '%', 0]

Fe3Sn2
###Combined Magnetic Imaging and Anisotropic Magnetoresistance Detection of Dipolar Skyrmions|Jin Tang,Jialiang Jiang,Ning Wang,Yaodong Wu,Yihao Wang,Junbo Li,Y. Soh,Yimin Xiong,Lingyao Kong,Shouguo Wang,Mingliang Tian,Haifeng Du###
(153309, 153312)
 Meanwhile, the field, helicity, andskyrmion count dependence of anisotropic magnetoresistance of the Fe3Sn2nanostructures are obtained simultaneously.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Te2.4Se0.6
###Low-temperature magnetoresistance hysteresis in Vanadium-doped Bi$_{2}$Te$_{2.4}$Se$_{0.6}$ bulk topological insulators|Birkan Düzel,Christian Riha,Karl Graser,Olivio Chiatti,Saskia F. Fischer###
(153415, 153420)
Low-temperature magnetoresistance hysteresis in Vanadium-doped Bi2Te2.4Se0.6 bulk topological insulators.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.12,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.48,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 10, 'K', 2],[211.0, 0, ',', 4],[218.0, 0.03, 'of', 4],[273.0, 0, 'and', 4]

Bi2Te2.4Se0.6
###Low-temperature magnetoresistance hysteresis in Vanadium-doped Bi$_{2}$Te$_{2.4}$Se$_{0.6}$ bulk topological insulators|Birkan Düzel,Christian Riha,Karl Graser,Olivio Chiatti,Saskia F. Fischer###
(153429, 153434)
 Bi2Te2.4Se0.6 single crystals show gapless topological surfacestates and doping with Vanadium allows to shift the chemical potential in thebulk band gap.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.12,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.48,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 10, 'K', 1],[197.0, 0, ',', 3],[204.0, 0.03, 'of', 3],[259.0, 0, 'and', 3]

Bi2-xTe2.4Se0.6
###Low-temperature magnetoresistance hysteresis in Vanadium-doped Bi$_{2}$Te$_{2.4}$Se$_{0.6}$ bulk topological insulators|Birkan Düzel,Christian Riha,Karl Graser,Olivio Chiatti,Saskia F. Fischer###
(153611, 153618)
 Here, we provide evidence forBi2-xTe2.4Se0.6 single crystals with concentrations x<missing VAR>  0,0.015 and 0.03 of Vanadium, that such magnetoresistance hysteresis is enhancedif both, three-dimensional bulk states and quasi-two-dimensional topologicalstates contribute to the transport (x<missing VAR>  0 and 0.03), and it is mostlysuppressed if the topological states govern transport (x<missing VAR>  0.015).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[105.0, 10, 'K', 2],[13.0, 0, ',', 0],[20.0, 0.03, 'of', 0],[75.0, 0, 'and', 0]

(SOC)
###Inverse Ising effect and Ising magnetoresistance|Duo Zhao,Jiaqian Sun,Wei Tang,Yu-Jia Zeng###
(153798, 153802)
 Ising (Zeeman-type) spin-orbit coupling (SOC) generated by in-plane inverseasymmetry has attracted considerable attention, especially in Isingsuperconductors and spin-valley coupling physics.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 1, 'Td', 2]

SOC
###Inverse Ising effect and Ising magnetoresistance|Duo Zhao,Jiaqian Sun,Wei Tang,Yu-Jia Zeng###
(153915, 153917)
 Here, wetheoretically study the spin texture of sigmaz<missing VAR> (spin angular momentumprojection along z) induced by Ising SOC in 1Td WTe2, and propose anunconventional spin-to-charge conversion named inverse Ising effect, in whichthe directions of the spin current, spin polarization and charge current arenot orthogonal.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 1, 'Td', 0]

WTe2
###Inverse Ising effect and Ising magnetoresistance|Duo Zhao,Jiaqian Sun,Wei Tang,Yu-Jia Zeng###
(153922, 153924)
 Here, wetheoretically study the spin texture of sigmaz<missing VAR> (spin angular momentumprojection along z) induced by Ising SOC in 1Td WTe2, and propose anunconventional spin-to-charge conversion named inverse Ising effect, in whichthe directions of the spin current, spin polarization and charge current arenot orthogonal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 1, 'Td', 0]

In
###Inverse Ising effect and Ising magnetoresistance|Duo Zhao,Jiaqian Sun,Wei Tang,Yu-Jia Zeng###
(153989, 153989)
 In particular, we predict the Ising magnetoresistance, whoseresistance depends on the out-of-plane magnetic momentum in WTe2/ferromagneticheterostructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 1, 'Td', 1]

WTe2
###Inverse Ising effect and Ising magnetoresistance|Duo Zhao,Jiaqian Sun,Wei Tang,Yu-Jia Zeng###
(154028, 154030)
 In particular, we predict the Ising magnetoresistance, whoseresistance depends on the out-of-plane magnetic momentum in WTe2/ferromagneticheterostructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 1, 'Td', 1]

SOC
###Inverse Ising effect and Ising magnetoresistance|Duo Zhao,Jiaqian Sun,Wei Tang,Yu-Jia Zeng###
(154110, 154112)
 Our predictionsprovide promising way to spin-momentum locking and spin-charge conversion basedon emerging Ising SOC.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[190.0, 1, 'Td', 3]

(B)
###Axial anomaly and longitudinal magnetoresistance of a generic three dimensional metal|Pallab Goswami,J. H. Pixley,S. Das Sarma###
(154516, 154518)
 We show that the emergence of the axial anomaly is a universal phenomenon fora generic three dimensional metal in the presence of parallel electric (E)and magnetic (B) fields.
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Axial anomaly and longitudinal magnetoresistance of a generic three dimensional metal|Pallab Goswami,J. H. Pixley,S. Das Sarma###
(154523, 154523)
 In contrast to the expectations of the classicaltheory of magnetotransport, this intrinsically quantum mechanical phenomenongives rise to the longitudinal magnetoresistance for any three dimensionalmetal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B2
###Axial anomaly and longitudinal magnetoresistance of a generic three dimensional metal|Pallab Goswami,J. H. Pixley,S. Das Sarma###
(154709, 154710)
 We demonstrate that the ionic scatteringcontributes a large positive magnetoconductivity propto B2 in the quantumlimit, which can cause a strong negative magnetoresistance for any threedimensional or quasi-two dimensional metal.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Axial anomaly and longitudinal magnetoresistance of a generic three dimensional metal|Pallab Goswami,J. H. Pixley,S. Das Sarma###
(154756, 154756)
 In contrast, the finite rangeneutral impurities and zero range point impurities can lead to both positiveand negative longitudinal magnetoresistance depending on the underlying bandstructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Axial anomaly and longitudinal magnetoresistance of a generic three dimensional metal|Pallab Goswami,J. H. Pixley,S. Das Sarma###
(154815, 154815)
 In the presence of both neutral and ionic impurities, thelongitudinal magnetoresistance of a generic metal in the quantum limitinitially becomes negative, and ultimately becomes positive after passingthrough a minimum.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TaAs
###Axial anomaly and longitudinal magnetoresistance of a generic three dimensional metal|Pallab Goswami,J. H. Pixley,S. Das Sarma###
(154927, 154928)
 We discuss in detail the qualitative agreement between ourtheory and recent observations of negative longitudinal magnetoresistance inWeyl semimetals TaAs and TaP, Dirac semimetals Na3Bi, Bi1-xSbx<missing VAR>, andZrTe5, and quasi-two dimensional metals PdCoO2,alpha-(BEDT-TTF)2I3 which do not possess any bulk three dimensionalDirac or Weyl quasiparticles.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TaP
###Axial anomaly and longitudinal magnetoresistance of a generic three dimensional metal|Pallab Goswami,J. H. Pixley,S. Das Sarma###
(154932, 154933)
 We discuss in detail the qualitative agreement between ourtheory and recent observations of negative longitudinal magnetoresistance inWeyl semimetals TaAs and TaP, Dirac semimetals Na3Bi, Bi1-xSbx<missing VAR>, andZrTe5, and quasi-two dimensional metals PdCoO2,alpha-(BEDT-TTF)2I3 which do not possess any bulk three dimensionalDirac or Weyl quasiparticles.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Na3Bi
###Axial anomaly and longitudinal magnetoresistance of a generic three dimensional metal|Pallab Goswami,J. H. Pixley,S. Das Sarma###
(154940, 154942)
 We discuss in detail the qualitative agreement between ourtheory and recent observations of negative longitudinal magnetoresistance inWeyl semimetals TaAs and TaP, Dirac semimetals Na3Bi, Bi1-xSbx<missing VAR>, andZrTe5, and quasi-two dimensional metals PdCoO2,alpha-(BEDT-TTF)2I3 which do not possess any bulk three dimensionalDirac or Weyl quasiparticles.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi1-xSb
###Axial anomaly and longitudinal magnetoresistance of a generic three dimensional metal|Pallab Goswami,J. H. Pixley,S. Das Sarma###
(154945, 154949)
 We discuss in detail the qualitative agreement between ourtheory and recent observations of negative longitudinal magnetoresistance inWeyl semimetals TaAs and TaP, Dirac semimetals Na3Bi, Bi1-xSbx<missing VAR>, andZrTe5, and quasi-two dimensional metals PdCoO2,alpha-(BEDT-TTF)2I3 which do not possess any bulk three dimensionalDirac or Weyl quasiparticles.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

ZrTe5
###Axial anomaly and longitudinal magnetoresistance of a generic three dimensional metal|Pallab Goswami,J. H. Pixley,S. Das Sarma###
(154956, 154958)
 We discuss in detail the qualitative agreement between ourtheory and recent observations of negative longitudinal magnetoresistance inWeyl semimetals TaAs and TaP, Dirac semimetals Na3Bi, Bi1-xSbx<missing VAR>, andZrTe5, and quasi-two dimensional metals PdCoO2,alpha-(BEDT-TTF)2I3 which do not possess any bulk three dimensionalDirac or Weyl quasiparticles.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PdCoO2
###Axial anomaly and longitudinal magnetoresistance of a generic three dimensional metal|Pallab Goswami,J. H. Pixley,S. Das Sarma###
(154971, 154974)
 We discuss in detail the qualitative agreement between ourtheory and recent observations of negative longitudinal magnetoresistance inWeyl semimetals TaAs and TaP, Dirac semimetals Na3Bi, Bi1-xSbx<missing VAR>, andZrTe5, and quasi-two dimensional metals PdCoO2,alpha-(BEDT-TTF)2I3 which do not possess any bulk three dimensionalDirac or Weyl quasiparticles.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Axial anomaly and longitudinal magnetoresistance of a generic three dimensional metal|Pallab Goswami,J. H. Pixley,S. Das Sarma###
(154981, 154981)
 We discuss in detail the qualitative agreement between ourtheory and recent observations of negative longitudinal magnetoresistance inWeyl semimetals TaAs and TaP, Dirac semimetals Na3Bi, Bi1-xSbx<missing VAR>, andZrTe5, and quasi-two dimensional metals PdCoO2,alpha-(BEDT-TTF)2I3 which do not possess any bulk three dimensionalDirac or Weyl quasiparticles.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Axial anomaly and longitudinal magnetoresistance of a generic three dimensional metal|Pallab Goswami,J. H. Pixley,S. Das Sarma###
(154988, 154988)
 We discuss in detail the qualitative agreement between ourtheory and recent observations of negative longitudinal magnetoresistance inWeyl semimetals TaAs and TaP, Dirac semimetals Na3Bi, Bi1-xSbx<missing VAR>, andZrTe5, and quasi-two dimensional metals PdCoO2,alpha-(BEDT-TTF)2I3 which do not possess any bulk three dimensionalDirac or Weyl quasiparticles.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I3
###Axial anomaly and longitudinal magnetoresistance of a generic three dimensional metal|Pallab Goswami,J. H. Pixley,S. Das Sarma###
(154991, 154992)
 We discuss in detail the qualitative agreement between ourtheory and recent observations of negative longitudinal magnetoresistance inWeyl semimetals TaAs and TaP, Dirac semimetals Na3Bi, Bi1-xSbx<missing VAR>, andZrTe5, and quasi-two dimensional metals PdCoO2,alpha-(BEDT-TTF)2I3 which do not possess any bulk three dimensionalDirac or Weyl quasiparticles.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Angular Dependent Magnetoresistance Oscillation of a Quasi-Two-Dimensional System in a Periodic Potential|Daijiro Yoshioka###
(155058, 155058)
 (BEDT-TTF)2M<missing VAR>Hg(SCN)4[M<missing VAR>K,Rb,Tl] shows typical two-dimensional angulardependent magnetoresistance oscillation (ADMRO) at high temperature (T<missing VAR>>8K),but at lower temperature it shows anomalously large magnetoresistance, and theADMRO pattern changes.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Angular Dependent Magnetoresistance Oscillation of a Quasi-Two-Dimensional System in a Periodic Potential|Daijiro Yoshioka###
(155065, 155065)
 (BEDT-TTF)2M<missing VAR>Hg(SCN)4[M<missing VAR>K,Rb,Tl] shows typical two-dimensional angulardependent magnetoresistance oscillation (ADMRO) at high temperature (T<missing VAR>>8K),but at lower temperature it shows anomalously large magnetoresistance, and theADMRO pattern changes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Hg(SCN)4
###Angular Dependent Magnetoresistance Oscillation of a Quasi-Two-Dimensional System in a Periodic Potential|Daijiro Yoshioka###
(155069, 155075)
 (BEDT-TTF)2M<missing VAR>Hg(SCN)4[M<missing VAR>K,Rb,Tl] shows typical two-dimensional angulardependent magnetoresistance oscillation (ADMRO) at high temperature (T<missing VAR>>8K),but at lower temperature it shows anomalously large magnetoresistance, and theADMRO pattern changes.
Featurization terminated normally.
0,0,0,0,0,0.3076923076923077,0.3076923076923077,0,0,0,0,0,0,0,0,0.3076923076923077,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Angular Dependent Magnetoresistance Oscillation of a Quasi-Two-Dimensional System in a Periodic Potential|Daijiro Yoshioka###
(155078, 155078)
 (BEDT-TTF)2M<missing VAR>Hg(SCN)4[M<missing VAR>K,Rb,Tl] shows typical two-dimensional angulardependent magnetoresistance oscillation (ADMRO) at high temperature (T<missing VAR>>8K),but at lower temperature it shows anomalously large magnetoresistance, and theADMRO pattern changes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Rb
###Angular Dependent Magnetoresistance Oscillation of a Quasi-Two-Dimensional System in a Periodic Potential|Daijiro Yoshioka###
(155080, 155080)
 (BEDT-TTF)2M<missing VAR>Hg(SCN)4[M<missing VAR>K,Rb,Tl] shows typical two-dimensional angulardependent magnetoresistance oscillation (ADMRO) at high temperature (T<missing VAR>>8K),but at lower temperature it shows anomalously large magnetoresistance, and theADMRO pattern changes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tl
###Angular Dependent Magnetoresistance Oscillation of a Quasi-Two-Dimensional System in a Periodic Potential|Daijiro Yoshioka###
(155082, 155082)
 (BEDT-TTF)2M<missing VAR>Hg(SCN)4[M<missing VAR>K,Rb,Tl] shows typical two-dimensional angulardependent magnetoresistance oscillation (ADMRO) at high temperature (T<missing VAR>>8K),but at lower temperature it shows anomalously large magnetoresistance, and theADMRO pattern changes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Angular Dependent Magnetoresistance Oscillation of a Quasi-Two-Dimensional System in a Periodic Potential|Daijiro Yoshioka###
(155107, 155107)
 (BEDT-TTF)2M<missing VAR>Hg(SCN)4[M<missing VAR>K,Rb,Tl] shows typical two-dimensional angulardependent magnetoresistance oscillation (ADMRO) at high temperature (T<missing VAR>>8K),but at lower temperature it shows anomalously large magnetoresistance, and theADMRO pattern changes.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Angular Dependent Magnetoresistance Oscillation of a Quasi-Two-Dimensional System in a Periodic Potential|Daijiro Yoshioka###
(155120, 155120)
 (BEDT-TTF)2M<missing VAR>Hg(SCN)4[M<missing VAR>K,Rb,Tl] shows typical two-dimensional angulardependent magnetoresistance oscillation (ADMRO) at high temperature (T<missing VAR>>8K),but at lower temperature it shows anomalously large magnetoresistance, and theADMRO pattern changes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Angular Dependent Magnetoresistance Oscillation of a Quasi-Two-Dimensional System in a Periodic Potential|Daijiro Yoshioka###
(155153, 155153)
 (BEDT-TTF)2M<missing VAR>Hg(SCN)4[M<missing VAR>K,Rb,Tl] shows typical two-dimensional angulardependent magnetoresistance oscillation (ADMRO) at high temperature (T<missing VAR>>8K),but at lower temperature it shows anomalously large magnetoresistance, and theADMRO pattern changes.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Angular Dependent Magnetoresistance Oscillation of a Quasi-Two-Dimensional System in a Periodic Potential|Daijiro Yoshioka###
(155217, 155217)
 I France bf 3 (1993) 1187] in thatreconstruction of the cylindrical Fermi surface into an open Fermi surface isnot assumed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La(1-x)
###Magnetoresistance in La(1-x)SrxCoO3 for 0.05 - x - 0.25|Vladimir Golovanov,Laszlo Mihaly,A. R. Moodenbaugh###
(155326, 155331)
Magnetoresistance in La(1-x)SrxCoO3 for 0.05 - x<missing VAR> - 0.25.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[65.0, 4, 'K', 1],[69.0, 300, 'K', 1],[80.0, 7, 'T', 1]

CoO3
###Magnetoresistance in La(1-x)SrxCoO3 for 0.05 - x - 0.25|Vladimir Golovanov,Laszlo Mihaly,A. R. Moodenbaugh###
(155333, 155335)
Magnetoresistance in La(1-x)SrxCoO3 for 0.05 - x<missing VAR> - 0.25.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 4, 'K', 1],[65.0, 300, 'K', 1],[76.0, 7, 'T', 1]

La(1-x)
###Magnetoresistance in La(1-x)SrxCoO3 for 0.05 - x - 0.25|Vladimir Golovanov,Laszlo Mihaly,A. R. Moodenbaugh###
(155368, 155373)
 The dc resistivity, magnetoresistance and magnetic susceptibility ofLa(1-x)SrxCoO3 compounds have been investigated in the temperature range of 4Kto 300K for magnetic fields up to 7 T.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[23.0, 4, 'K', 0],[27.0, 300, 'K', 0],[38.0, 7, 'T', 0]

CoO3
###Magnetoresistance in La(1-x)SrxCoO3 for 0.05 - x - 0.25|Vladimir Golovanov,Laszlo Mihaly,A. R. Moodenbaugh###
(155375, 155377)
 The dc resistivity, magnetoresistance and magnetic susceptibility ofLa(1-x)SrxCoO3 compounds have been investigated in the temperature range of 4Kto 300K for magnetic fields up to 7 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 4, 'K', 0],[23.0, 300, 'K', 0],[34.0, 7, 'T', 0]

In
###Magnetoresistance in La(1-x)SrxCoO3 for 0.05 - x - 0.25|Vladimir Golovanov,Laszlo Mihaly,A. R. Moodenbaugh###
(155414, 155414)
 In the doping range studied (0.05 - x<missing VAR> -0.25) the electronic properties of the material exhibit a crossover fromsemiconducting to metallic behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 4, 'K', 1],[14.0, 300, 'K', 1],[3.0, 7, 'T', 1]

MnO3
###Polaron transport and lattice dynamics in colossal magnetoresistance manganites|J. D. Lee,B. I. Min###
(155640, 155642)
 Based on the model combining the spin double exchange and the latticepolaron, we have studied the colossal magnetoresistance phenomena observed inperovskite manganites R<missing VAR>1-xAxMnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Magnetoresistance in Mn pyrochlore: electrical transport in a low carrier density ferromagnet|Pinaki Majumdar,Peter Littlewood###
(155837, 155837)
Magnetoresistance in Mn pyrochlore electrical transport in a low carrier density ferromagnet.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tl2-xSc
###Magnetoresistance in Mn pyrochlore: electrical transport in a low carrier density ferromagnet|Pinaki Majumdar,Peter Littlewood###
(156035, 156039)
 We propose that this provides agood model for colossal magnetoresistance in the pyrochloreTl2-xScx<missing VAR>Mn2O7, fundamentally different from the mechanism in theperovskite manganites such as La1-xSrx<missing VAR>MnO3.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

Mn2O7
###Magnetoresistance in Mn pyrochlore: electrical transport in a low carrier density ferromagnet|Pinaki Majumdar,Peter Littlewood###
(156041, 156044)
 We propose that this provides agood model for colossal magnetoresistance in the pyrochloreTl2-xScx<missing VAR>Mn2O7, fundamentally different from the mechanism in theperovskite manganites such as La1-xSrx<missing VAR>MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.7777777777777778,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La1-xSr
###Magnetoresistance in Mn pyrochlore: electrical transport in a low carrier density ferromagnet|Pinaki Majumdar,Peter Littlewood###
(156070, 156074)
 We propose that this provides agood model for colossal magnetoresistance in the pyrochloreTl2-xScx<missing VAR>Mn2O7, fundamentally different from the mechanism in theperovskite manganites such as La1-xSrx<missing VAR>MnO3.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

MnO3
###Magnetoresistance in Mn pyrochlore: electrical transport in a low carrier density ferromagnet|Pinaki Majumdar,Peter Littlewood###
(156076, 156078)
 We propose that this provides agood model for colossal magnetoresistance in the pyrochloreTl2-xScx<missing VAR>Mn2O7, fundamentally different from the mechanism in theperovskite manganites such as La1-xSrx<missing VAR>MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Universal Relationship Between Giant Magnetoresistance and Anisotropic Magnetoresistance in Spin Valve Multilayers|B. H. Miller,Branko P. Stojkovi'c,E. D. Dahlberg###
(156165, 156165)
 We measure the giant magnetoresistance (GMR) with the current both paralleland perpendicular to the direction of the magnetization in the ferromagnetic(FM) layers and thus probe the anisotropy of the effective mean free paths forthe spin-up and spin-down electrons, seen in the anisotropic magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin-Dependent Coulomb Blockade in Ferromagnet/Normal-Metal/Ferromagnet Double Tunnel Junctions|Hiroshi Imamura,Saburo Takahashi,Sadamichi Maekawa###
(156537, 156537)
 In this region, the tunnelmagnetoresistance oscillates as a function of bias voltage.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tl2Ba2CuO6
###Theory of angular magnetoresistance oscillations in Tl2Ba2CuO6|Adrian Dragulescu,Victor M. Yakovenko,David J. Singh###
(156621, 156627)
Theory of angular magnetoresistance oscillations in Tl2Ba2CuO6.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5454545454545454,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.09090909090909091,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tl2Ba2CuO6
###Theory of angular magnetoresistance oscillations in Tl2Ba2CuO6|Adrian Dragulescu,Victor M. Yakovenko,David J. Singh###
(156646, 156652)
 Using the calculated electron energy band structure of Tl2Ba2CuO6, we computethe dependence of the c<missing VAR> axis magnetoresistance on the orientation of themagnetic field for different magnitudes of the magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5454545454545454,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.09090909090909091,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Negative Magnetoresistance of Granular Metals in a Strong Magnetic Field|I. S. Beloborodov,K. B. Efetov###
(157000, 157000)
 At low temperature,the pairs do not contribute to the macroscopic transport but their existencecan drastically reduce the conductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Gd2PdSi3
###Observation of a temperature dependent electrical resistance minimum above the magnetic ordering temperature in Gd$_2$PdSi$_3$|R. Mallik,E. V. Sampathkumaran,M. Strecker,G. Wortmann###
(157122, 157126)
Observation of a temperature dependent electrical resistance minimum above the magnetic ordering temperature in Gd2PdSi3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 45, 'K', 2]

Gd
###Observation of a temperature dependent electrical resistance minimum above the magnetic ordering temperature in Gd$_2$PdSi$_3$|R. Mallik,E. V. Sampathkumaran,M. Strecker,G. Wortmann###
(157168, 157168)
 Results on electrical resistivity, magnetoresistance, magnetic Results onelectrical resistivity, magnetoresistance, magnetic susceptibility, heatcapacity and Gd Mossbauer measurements on a Gd-based intermetallic compound,Gd2PdSi3 are reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 45, 'K', 1]

Gd
###Observation of a temperature dependent electrical resistance minimum above the magnetic ordering temperature in Gd$_2$PdSi$_3$|R. Mallik,E. V. Sampathkumaran,M. Strecker,G. Wortmann###
(157178, 157178)
 Results on electrical resistivity, magnetoresistance, magnetic Results onelectrical resistivity, magnetoresistance, magnetic susceptibility, heatcapacity and Gd Mossbauer measurements on a Gd-based intermetallic compound,Gd2PdSi3 are reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 45, 'K', 1]

Gd2PdSi3
###Observation of a temperature dependent electrical resistance minimum above the magnetic ordering temperature in Gd$_2$PdSi$_3$|R. Mallik,E. V. Sampathkumaran,M. Strecker,G. Wortmann###
(157188, 157192)
 Results on electrical resistivity, magnetoresistance, magnetic Results onelectrical resistivity, magnetoresistance, magnetic susceptibility, heatcapacity and Gd Mossbauer measurements on a Gd-based intermetallic compound,Gd2PdSi3 are reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 45, 'K', 1]

K
###Observation of a temperature dependent electrical resistance minimum above the magnetic ordering temperature in Gd$_2$PdSi$_3$|R. Mallik,E. V. Sampathkumaran,M. Strecker,G. Wortmann###
(157254, 157254)
 A finding of interest is that the resistivityunexpectedly shows a well-defined minimum at about 45 K, well above the longrange magnetic ordering temperature (21 K), a feature which gets suppressed bythe application of a magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 45, 'K', 0]

Gd
###Observation of a temperature dependent electrical resistance minimum above the magnetic ordering temperature in Gd$_2$PdSi$_3$|R. Mallik,E. V. Sampathkumaran,M. Strecker,G. Wortmann###
(157292, 157292)
 This observation in a Gd alloy presents aninteresting scenario.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 45, 'K', 1]

C
###Angular Dependence of C-Axis Magnetoresistance in Bi-2212 Single Crystals With Columnar Defects|N. Morozov,L. N. Bulaevskii,M. P. Maley,J. Y. Coulter,A. E. Koshelev,T. -W. Li###
(157392, 157392)
Angular Dependence of C-Axis Magnetoresistance in Bi-2212 Single Crystals With Columnar Defects.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 68, 'K', 2],[152.0, 2, ',', 3],[218.0, 100, 'at', 5]

Bi
###Angular Dependence of C-Axis Magnetoresistance in Bi-2212 Single Crystals With Columnar Defects|N. Morozov,L. N. Bulaevskii,M. P. Maley,J. Y. Coulter,A. E. Koshelev,T. -W. Li###
(157400, 157400)
Angular Dependence of C-Axis Magnetoresistance in Bi-2212 Single Crystals With Columnar Defects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 68, 'K', 2],[144.0, 2, ',', 3],[210.0, 100, 'at', 5]

(B)
###Angular Dependence of C-Axis Magnetoresistance in Bi-2212 Single Crystals With Columnar Defects|N. Morozov,L. N. Bulaevskii,M. P. Maley,J. Y. Coulter,A. E. Koshelev,T. -W. Li###
(157437, 157439)
 We measured the angular dependence of the c<missing VAR>-axis magnetoresistance rhoc<missing VAR>(B)of Bi-2212 irradiated with heavy ions.
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 68, 'K', 1],[105.0, 2, ',', 2],[171.0, 100, 'at', 4]

Bi
###Angular Dependence of C-Axis Magnetoresistance in Bi-2212 Single Crystals With Columnar Defects|N. Morozov,L. N. Bulaevskii,M. P. Maley,J. Y. Coulter,A. E. Koshelev,T. -W. Li###
(157444, 157444)
 We measured the angular dependence of the c<missing VAR>-axis magnetoresistance rhoc<missing VAR>(B)of Bi-2212 irradiated with heavy ions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 68, 'K', 1],[100.0, 2, ',', 2],[166.0, 100, 'at', 4]

At
###Angular Dependence of C-Axis Magnetoresistance in Bi-2212 Single Crystals With Columnar Defects|N. Morozov,L. N. Bulaevskii,M. P. Maley,J. Y. Coulter,A. E. Koshelev,T. -W. Li###
(157457, 157457)
 At temperatures near 68 K the scaling ofrhoc<missing VAR>(B) with the c<missing VAR>-axis magnetic field component Bperp is broken and thein-plane field, Bparallel, affects rhoc<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 68, 'K', 0],[87.0, 2, ',', 1],[153.0, 100, 'at', 3]

(B)
###Angular Dependence of C-Axis Magnetoresistance in Bi-2212 Single Crystals With Columnar Defects|N. Morozov,L. N. Bulaevskii,M. P. Maley,J. Y. Coulter,A. E. Koshelev,T. -W. Li###
(157473, 157475)
 At temperatures near 68 K the scaling ofrhoc<missing VAR>(B) with the c<missing VAR>-axis magnetic field component Bperp is broken and thein-plane field, Bparallel, affects rhoc<missing VAR>.
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 68, 'K', 0],[69.0, 2, ',', 1],[135.0, 100, 'at', 3]

B
###Angular Dependence of C-Axis Magnetoresistance in Bi-2212 Single Crystals With Columnar Defects|N. Morozov,L. N. Bulaevskii,M. P. Maley,J. Y. Coulter,A. E. Koshelev,T. -W. Li###
(157491, 157491)
 At temperatures near 68 K the scaling ofrhoc<missing VAR>(B) with the c<missing VAR>-axis magnetic field component Bperp is broken and thein-plane field, Bparallel, affects rhoc<missing VAR>.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 68, 'K', 0],[53.0, 2, ',', 1],[119.0, 100, 'at', 3]

B
###Angular Dependence of C-Axis Magnetoresistance in Bi-2212 Single Crystals With Columnar Defects|N. Morozov,L. N. Bulaevskii,M. P. Maley,J. Y. Coulter,A. E. Koshelev,T. -W. Li###
(157510, 157510)
 At temperatures near 68 K the scaling ofrhoc<missing VAR>(B) with the c<missing VAR>-axis magnetic field component Bperp is broken and thein-plane field, Bparallel, affects rhoc<missing VAR>.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 68, 'K', 0],[34.0, 2, ',', 1],[100.0, 100, 'at', 3]

At
###Angular Dependence of C-Axis Magnetoresistance in Bi-2212 Single Crystals With Columnar Defects|N. Morozov,L. N. Bulaevskii,M. P. Maley,J. Y. Coulter,A. E. Koshelev,T. -W. Li###
(157520, 157520)
 At this temperature, at a specificfield Bcr approx BPhi/2, magnetoresistance becomes independent of fieldorientation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 68, 'K', 1],[24.0, 2, ',', 0],[90.0, 100, 'at', 2]

B
###Angular Dependence of C-Axis Magnetoresistance in Bi-2212 Single Crystals With Columnar Defects|N. Morozov,L. N. Bulaevskii,M. P. Maley,J. Y. Coulter,A. E. Koshelev,T. -W. Li###
(157536, 157536)
 At this temperature, at a specificfield Bcr approx BPhi/2, magnetoresistance becomes independent of fieldorientation.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 68, 'K', 1],[8.0, 2, ',', 0],[74.0, 100, 'at', 2]

B
###Angular Dependence of C-Axis Magnetoresistance in Bi-2212 Single Crystals With Columnar Defects|N. Morozov,L. N. Bulaevskii,M. P. Maley,J. Y. Coulter,A. E. Koshelev,T. -W. Li###
(157541, 157541)
 At this temperature, at a specificfield Bcr approx BPhi/2, magnetoresistance becomes independent of fieldorientation.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 68, 'K', 1],[3.0, 2, ',', 0],[69.0, 100, 'at', 2]

BB
###Angular Dependence of C-Axis Magnetoresistance in Bi-2212 Single Crystals With Columnar Defects|N. Morozov,L. N. Bulaevskii,M. P. Maley,J. Y. Coulter,A. E. Koshelev,T. -W. Li###
(157612, 157613)
 We find L/s is about 100 at BBcr,where s<missing VAR> is the interlayer spacing.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 68, 'K', 3],[68.0, 2, ',', 2],[2.0, 100, 'at', 0]

Eu2CuSi3
###Magnetic behaviour of Eu_2CuSi_3: Large negative magnetoresistance above Curie temperature|Subham Majumdar,R. Mallik,E. V. Sampathkumaran,Kirsten Rupprecht,G. Wortmann###
(157946, 157950)
Magnetic behaviour of Eu2CuSi3 Large negative magnetoresistance above Curie temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 37, 'K', 2],[165.0, 3, 'T', 3]

Eu
###Magnetic behaviour of Eu_2CuSi_3: Large negative magnetoresistance above Curie temperature|Subham Majumdar,R. Mallik,E. V. Sampathkumaran,Kirsten Rupprecht,G. Wortmann###
(158003, 158003)
 We report here the results of magnetic susceptibility,electrical-resistivity, magnetoresistance (MR), heat-capacity and 151EuMossbauer effect measurements on the compound, Eu2CuSi3, crystallizing in anAlB2-derived hexagonal structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 37, 'K', 1],[112.0, 3, 'T', 2]

Eu2CuSi3
###Magnetic behaviour of Eu_2CuSi_3: Large negative magnetoresistance above Curie temperature|Subham Majumdar,R. Mallik,E. V. Sampathkumaran,Kirsten Rupprecht,G. Wortmann###
(158019, 158023)
 We report here the results of magnetic susceptibility,electrical-resistivity, magnetoresistance (MR), heat-capacity and 151EuMossbauer effect measurements on the compound, Eu2CuSi3, crystallizing in anAlB2-derived hexagonal structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 37, 'K', 1],[92.0, 3, 'T', 2]

AlB2
###Magnetic behaviour of Eu_2CuSi_3: Large negative magnetoresistance above Curie temperature|Subham Majumdar,R. Mallik,E. V. Sampathkumaran,Kirsten Rupprecht,G. Wortmann###
(158033, 158035)
 We report here the results of magnetic susceptibility,electrical-resistivity, magnetoresistance (MR), heat-capacity and 151EuMossbauer effect measurements on the compound, Eu2CuSi3, crystallizing in anAlB2-derived hexagonal structure.
Featurization terminated normally.
0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 37, 'K', 1],[80.0, 3, 'T', 2]

Eu
###Magnetic behaviour of Eu_2CuSi_3: Large negative magnetoresistance above Curie temperature|Subham Majumdar,R. Mallik,E. V. Sampathkumaran,Kirsten Rupprecht,G. Wortmann###
(158052, 158052)
 The results establish that Eu ions aredivalent, undergoing long-range ferromagnetic-ordering below (T<missing VAR>C) 37 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 37, 'K', 0],[63.0, 3, 'T', 1]

C
###Magnetic behaviour of Eu_2CuSi_3: Large negative magnetoresistance above Curie temperature|Subham Majumdar,R. Mallik,E. V. Sampathkumaran,Kirsten Rupprecht,G. Wortmann###
(158076, 158076)
 The results establish that Eu ions aredivalent, undergoing long-range ferromagnetic-ordering below (T<missing VAR>C) 37 K.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 37, 'K', 0],[39.0, 3, 'T', 1]

C
###Magnetic behaviour of Eu_2CuSi_3: Large negative magnetoresistance above Curie temperature|Subham Majumdar,R. Mallik,E. V. Sampathkumaran,Kirsten Rupprecht,G. Wortmann###
(158116, 158116)
 Aninteresting observation is that the sign of MR is negative even at temperaturesclose to 3TC, with increasing magnitude with decreasing temperature exhibitinga peak at T<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 37, 'K', 1],[1.0, 3, 'T', 0]

C
###Magnetic behaviour of Eu_2CuSi_3: Large negative magnetoresistance above Curie temperature|Subham Majumdar,R. Mallik,E. V. Sampathkumaran,Kirsten Rupprecht,G. Wortmann###
(158141, 158141)
 Aninteresting observation is that the sign of MR is negative even at temperaturesclose to 3TC, with increasing magnitude with decreasing temperature exhibitinga peak at T<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 37, 'K', 1],[26.0, 3, 'T', 0]

Cu
###Magnetic behaviour of Eu_2CuSi_3: Large negative magnetoresistance above Curie temperature|Subham Majumdar,R. Mallik,E. V. Sampathkumaran,Kirsten Rupprecht,G. Wortmann###
(158157, 158157)
 This observation, being made for a Cu containing magneticrare-earth compound for the first time, is of relevance to the field ofcollosal magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 37, 'K', 2],[42.0, 3, 'T', 1]

La1-xCa
###Anisotropic magnetoresistive properties of La_{1-x}Ca_{x}MnO_{3} (x \approx 1/3) film at temperatures far below the Curie temperature|B. I. Belevtsev,V. B. Krasovitsky,D. G. Naugle,K. D. D. Rathnayaka,A. Parasiris###
(158215, 158219)
Anisotropic magnetoresistive properties of La1-xCax<missing VAR>MnO3 (x<missing VAR> approx 1/3) film at temperatures far below the Curie temperature.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[170.0, 12, 'kOe', 2],[188.0, 12, 'kOe', 2],[217.0, 6, 'kOe', 3],[279.0, 18, 'K', 5]

MnO3
###Anisotropic magnetoresistive properties of La_{1-x}Ca_{x}MnO_{3} (x \approx 1/3) film at temperatures far below the Curie temperature|B. I. Belevtsev,V. B. Krasovitsky,D. G. Naugle,K. D. D. Rathnayaka,A. Parasiris###
(158221, 158223)
Anisotropic magnetoresistive properties of La1-xCax<missing VAR>MnO3 (x<missing VAR> approx 1/3) film at temperatures far below the Curie temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 12, 'kOe', 2],[184.0, 12, 'kOe', 2],[213.0, 6, 'kOe', 3],[275.0, 18, 'K', 5]

H
###Anisotropic magnetoresistive properties of La_{1-x}Ca_{x}MnO_{3} (x \approx 1/3) film at temperatures far below the Curie temperature|B. I. Belevtsev,V. B. Krasovitsky,D. G. Naugle,K. D. D. Rathnayaka,A. Parasiris###
(158283, 158283)
 A sharp distinction between magnetoresistance (MR) behavior for the magneticfields applied perpendicular (Hperp) and parallel (Hpar) to the filmplane is found in colossal-magnetoresistance film La1-xCax<missing VAR>MnO3 (x<missing VAR>approx 3).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 12, 'kOe', 1],[124.0, 12, 'kOe', 1],[153.0, 6, 'kOe', 2],[215.0, 18, 'K', 4]

H
###Anisotropic magnetoresistive properties of La_{1-x}Ca_{x}MnO_{3} (x \approx 1/3) film at temperatures far below the Curie temperature|B. I. Belevtsev,V. B. Krasovitsky,D. G. Naugle,K. D. D. Rathnayaka,A. Parasiris###
(158292, 158292)
 A sharp distinction between magnetoresistance (MR) behavior for the magneticfields applied perpendicular (Hperp) and parallel (Hpar) to the filmplane is found in colossal-magnetoresistance film La1-xCax<missing VAR>MnO3 (x<missing VAR>approx 3).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 12, 'kOe', 1],[115.0, 12, 'kOe', 1],[144.0, 6, 'kOe', 2],[206.0, 18, 'K', 4]

La1-xCa
###Anisotropic magnetoresistive properties of La_{1-x}Ca_{x}MnO_{3} (x \approx 1/3) film at temperatures far below the Curie temperature|B. I. Belevtsev,V. B. Krasovitsky,D. G. Naugle,K. D. D. Rathnayaka,A. Parasiris###
(158317, 158321)
 A sharp distinction between magnetoresistance (MR) behavior for the magneticfields applied perpendicular (Hperp) and parallel (Hpar) to the filmplane is found in colossal-magnetoresistance film La1-xCax<missing VAR>MnO3 (x<missing VAR>approx 3).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[68.0, 12, 'kOe', 1],[86.0, 12, 'kOe', 1],[115.0, 6, 'kOe', 2],[177.0, 18, 'K', 4]

MnO3
###Anisotropic magnetoresistive properties of La_{1-x}Ca_{x}MnO_{3} (x \approx 1/3) film at temperatures far below the Curie temperature|B. I. Belevtsev,V. B. Krasovitsky,D. G. Naugle,K. D. D. Rathnayaka,A. Parasiris###
(158323, 158325)
 A sharp distinction between magnetoresistance (MR) behavior for the magneticfields applied perpendicular (Hperp) and parallel (Hpar) to the filmplane is found in colossal-magnetoresistance film La1-xCax<missing VAR>MnO3 (x<missing VAR>approx 3).
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 12, 'kOe', 1],[82.0, 12, 'kOe', 1],[111.0, 6, 'kOe', 2],[173.0, 18, 'K', 4]

At
###Anisotropic magnetoresistive properties of La_{1-x}Ca_{x}MnO_{3} (x \approx 1/3) film at temperatures far below the Curie temperature|B. I. Belevtsev,V. B. Krasovitsky,D. G. Naugle,K. D. D. Rathnayaka,A. Parasiris###
(158337, 158337)
 At increasing of Hperp the MR is first negative (at Hperp < 4k<missing VAR>Oe), then positive (4 k<missing VAR>Oe < Hperp < 12 kOe), and then negative again(Hperp > 12 kOe).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 12, 'kOe', 0],[70.0, 12, 'kOe', 0],[99.0, 6, 'kOe', 1],[161.0, 18, 'K', 3]

H
###Anisotropic magnetoresistive properties of La_{1-x}Ca_{x}MnO_{3} (x \approx 1/3) film at temperatures far below the Curie temperature|B. I. Belevtsev,V. B. Krasovitsky,D. G. Naugle,K. D. D. Rathnayaka,A. Parasiris###
(158343, 158343)
 At increasing of Hperp the MR is first negative (at Hperp < 4k<missing VAR>Oe), then positive (4 k<missing VAR>Oe < Hperp < 12 kOe), and then negative again(Hperp > 12 kOe).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 12, 'kOe', 0],[64.0, 12, 'kOe', 0],[93.0, 6, 'kOe', 1],[155.0, 18, 'K', 3]

H
###Anisotropic magnetoresistive properties of La_{1-x}Ca_{x}MnO_{3} (x \approx 1/3) film at temperatures far below the Curie temperature|B. I. Belevtsev,V. B. Krasovitsky,D. G. Naugle,K. D. D. Rathnayaka,A. Parasiris###
(158360, 158360)
 At increasing of Hperp the MR is first negative (at Hperp < 4k<missing VAR>Oe), then positive (4 k<missing VAR>Oe < Hperp < 12 kOe), and then negative again(Hperp > 12 kOe).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 12, 'kOe', 0],[47.0, 12, 'kOe', 0],[76.0, 6, 'kOe', 1],[138.0, 18, 'K', 3]

H
###Anisotropic magnetoresistive properties of La_{1-x}Ca_{x}MnO_{3} (x \approx 1/3) film at temperatures far below the Curie temperature|B. I. Belevtsev,V. B. Krasovitsky,D. G. Naugle,K. D. D. Rathnayaka,A. Parasiris###
(158385, 158385)
 At increasing of Hperp the MR is first negative (at Hperp < 4k<missing VAR>Oe), then positive (4 k<missing VAR>Oe < Hperp < 12 kOe), and then negative again(Hperp > 12 kOe).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 12, 'kOe', 0],[22.0, 12, 'kOe', 0],[51.0, 6, 'kOe', 1],[113.0, 18, 'K', 3]

H
###Anisotropic magnetoresistive properties of La_{1-x}Ca_{x}MnO_{3} (x \approx 1/3) film at temperatures far below the Curie temperature|B. I. Belevtsev,V. B. Krasovitsky,D. G. Naugle,K. D. D. Rathnayaka,A. Parasiris###
(158403, 158403)
 At increasing of Hperp the MR is first negative (at Hperp < 4k<missing VAR>Oe), then positive (4 k<missing VAR>Oe < Hperp < 12 kOe), and then negative again(Hperp > 12 kOe).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 12, 'kOe', 0],[4.0, 12, 'kOe', 0],[33.0, 6, 'kOe', 1],[95.0, 18, 'K', 3]

At
###Anisotropic magnetoresistive properties of La_{1-x}Ca_{x}MnO_{3} (x \approx 1/3) film at temperatures far below the Curie temperature|B. I. Belevtsev,V. B. Krasovitsky,D. G. Naugle,K. D. D. Rathnayaka,A. Parasiris###
(158411, 158411)
 At increasing of Hpar the MR is positive below Hparsimeq 6 kOe and negative above it.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 12, 'kOe', 1],[4.0, 12, 'kOe', 1],[25.0, 6, 'kOe', 0],[87.0, 18, 'K', 2]

H
###Anisotropic magnetoresistive properties of La_{1-x}Ca_{x}MnO_{3} (x \approx 1/3) film at temperatures far below the Curie temperature|B. I. Belevtsev,V. B. Krasovitsky,D. G. Naugle,K. D. D. Rathnayaka,A. Parasiris###
(158417, 158417)
 At increasing of Hpar the MR is positive below Hparsimeq 6 kOe and negative above it.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 12, 'kOe', 1],[10.0, 12, 'kOe', 1],[19.0, 6, 'kOe', 0],[81.0, 18, 'K', 2]

H
###Anisotropic magnetoresistive properties of La_{1-x}Ca_{x}MnO_{3} (x \approx 1/3) film at temperatures far below the Curie temperature|B. I. Belevtsev,V. B. Krasovitsky,D. G. Naugle,K. D. D. Rathnayaka,A. Parasiris###
(158431, 158431)
 At increasing of Hpar the MR is positive below Hparsimeq 6 kOe and negative above it.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 12, 'kOe', 1],[24.0, 12, 'kOe', 1],[5.0, 6, 'kOe', 0],[67.0, 18, 'K', 2]

In
###Anisotropic magnetoresistive properties of La_{1-x}Ca_{x}MnO_{3} (x \approx 1/3) film at temperatures far below the Curie temperature|B. I. Belevtsev,V. B. Krasovitsky,D. G. Naugle,K. D. D. Rathnayaka,A. Parasiris###
(158447, 158447)
 In both cases the magnetic field wasperpendicular to the current.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 12, 'kOe', 2],[40.0, 12, 'kOe', 2],[11.0, 6, 'kOe', 1],[51.0, 18, 'K', 1]

La
###Percolative phase separation induced by nonuniformly distributed excess oxygens|Ilryong Kim,Joonghoe Dho,Soonchil Lee###
(158557, 158557)
 The zero-field 139La and 55Mn nuclear magnetic resonances werestudied in rm La0.8Ca0.2MnO3delta with different oxygenstoichiometry delta.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Percolative phase separation induced by nonuniformly distributed excess oxygens|Ilryong Kim,Joonghoe Dho,Soonchil Lee###
(158562, 158562)
 The zero-field 139La and 55Mn nuclear magnetic resonances werestudied in rm La0.8Ca0.2MnO3delta with different oxygenstoichiometry delta.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.8Ca0.2MnO3
###Percolative phase separation induced by nonuniformly distributed excess oxygens|Ilryong Kim,Joonghoe Dho,Soonchil Lee###
(158579, 158585)
 The zero-field 139La and 55Mn nuclear magnetic resonances werestudied in rm La0.8Ca0.2MnO3delta with different oxygenstoichiometry delta.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.04,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La
###Percolative phase separation induced by nonuniformly distributed excess oxygens|Ilryong Kim,Joonghoe Dho,Soonchil Lee###
(158623, 158623)
 The signal intensity, peak frequency and linebroadening of the 139La NMR spectrum show that excess oxygens have atendency to concentrate and establish local ferromagnetic ordering aroundthemselves.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Percolative phase separation induced by nonuniformly distributed excess oxygens|Ilryong Kim,Joonghoe Dho,Soonchil Lee###
(158625, 158625)
 The signal intensity, peak frequency and linebroadening of the 139La NMR spectrum show that excess oxygens have atendency to concentrate and establish local ferromagnetic ordering aroundthemselves.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Anisotropic magnetoresistance of GaAs two-dimensional holes|S. J. Papadakis,E. P. De Poortere,M. Shayegan,R. Winkler###
(158802, 158803)
Anisotropic magnetoresistance of GaAs two-dimensional holes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Anisotropic magnetoresistance of GaAs two-dimensional holes|S. J. Papadakis,E. P. De Poortere,M. Shayegan,R. Winkler###
(158820, 158821)
 Experiments on high-quality GaAs (311)A two-dimensional holes at lowtemperatures reveal a remarkable dependence of the magnetoresistance, measuredwith an in-plane magnetic field (B), on the direction of B relative to boththe crystal axes and the current direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(B)
###Anisotropic magnetoresistance of GaAs two-dimensional holes|S. J. Papadakis,E. P. De Poortere,M. Shayegan,R. Winkler###
(158871, 158873)
 Experiments on high-quality GaAs (311)A two-dimensional holes at lowtemperatures reveal a remarkable dependence of the magnetoresistance, measuredwith an in-plane magnetic field (B), on the direction of B relative to boththe crystal axes and the current direction.
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Anisotropic magnetoresistance of GaAs two-dimensional holes|S. J. Papadakis,E. P. De Poortere,M. Shayegan,R. Winkler###
(158884, 158884)
 Experiments on high-quality GaAs (311)A two-dimensional holes at lowtemperatures reveal a remarkable dependence of the magnetoresistance, measuredwith an in-plane magnetic field (B), on the direction of B relative to boththe crystal axes and the current direction.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Anisotropic magnetoresistance of GaAs two-dimensional holes|S. J. Papadakis,E. P. De Poortere,M. Shayegan,R. Winkler###
(158928, 158928)
 The magnetoresistance features, andin particular the value of B above which the resistivity exhibits aninsulating behavior, depend on the orientation of B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Anisotropic magnetoresistance of GaAs two-dimensional holes|S. J. Papadakis,E. P. De Poortere,M. Shayegan,R. Winkler###
(158958, 158958)
 The magnetoresistance features, andin particular the value of B above which the resistivity exhibits aninsulating behavior, depend on the orientation of B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Anisotropic magnetoresistance of GaAs two-dimensional holes|S. J. Papadakis,E. P. De Poortere,M. Shayegan,R. Winkler###
(159010, 159010)
 To explain the data, theanisotropic band structure of the holes and a re-population of thespin-subbands in the presence of B, as well as the coupling of the orbitalmotion to B, need to be taken into account.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Anisotropic magnetoresistance of GaAs two-dimensional holes|S. J. Papadakis,E. P. De Poortere,M. Shayegan,R. Winkler###
(159034, 159034)
 To explain the data, theanisotropic band structure of the holes and a re-population of thespin-subbands in the presence of B, as well as the coupling of the orbitalmotion to B, need to be taken into account.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Giant AC magnetoresistance and anisotropic AC magnetoresistance in granular magnetic alloys|A. B. Pakhomov,J. C. Denardin,M. Knobel,O. F. de Lima###
(159061, 159061)
Giant AC magnetoresistance and anisotropic AC magnetoresistance in granular magnetic alloys.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, -60, 'kOe', 1],[90.0, 60, 'kOe', 1],[205.0, 20, 'kOe', 3]

C
###Giant AC magnetoresistance and anisotropic AC magnetoresistance in granular magnetic alloys|A. B. Pakhomov,J. C. Denardin,M. Knobel,O. F. de Lima###
(159070, 159070)
Giant AC magnetoresistance and anisotropic AC magnetoresistance in granular magnetic alloys.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, -60, 'kOe', 1],[81.0, 60, 'kOe', 1],[196.0, 20, 'kOe', 3]

C
###Giant AC magnetoresistance and anisotropic AC magnetoresistance in granular magnetic alloys|A. B. Pakhomov,J. C. Denardin,M. Knobel,O. F. de Lima###
(159087, 159087)
 (withdrawn)AC resistance of melt-spun granular magnetic Cu85Co15 ribbons wasmeasured as a function of temperature in the range 5-300 K, magnetic field Hdcin the range -60 kOe to 60 kOe, and frequency in the range 1-1000 Hz.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, -60, 'kOe', 0],[64.0, 60, 'kOe', 0],[179.0, 20, 'kOe', 2]

Cu85Co15
###Giant AC magnetoresistance and anisotropic AC magnetoresistance in granular magnetic alloys|A. B. Pakhomov,J. C. Denardin,M. Knobel,O. F. de Lima###
(159101, 159104)
 (withdrawn)AC resistance of melt-spun granular magnetic Cu85Co15 ribbons wasmeasured as a function of temperature in the range 5-300 K, magnetic field Hdcin the range -60 kOe to 60 kOe, and frequency in the range 1-1000 Hz.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0.85,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, -60, 'kOe', 0],[47.0, 60, 'kOe', 0],[162.0, 20, 'kOe', 2]

K
###Giant AC magnetoresistance and anisotropic AC magnetoresistance in granular magnetic alloys|A. B. Pakhomov,J. C. Denardin,M. Knobel,O. F. de Lima###
(159133, 159133)
 (withdrawn)AC resistance of melt-spun granular magnetic Cu85Co15 ribbons wasmeasured as a function of temperature in the range 5-300 K, magnetic field Hdcin the range -60 kOe to 60 kOe, and frequency in the range 1-1000 Hz.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, -60, 'kOe', 0],[18.0, 60, 'kOe', 0],[133.0, 20, 'kOe', 2]

C
###Giant AC magnetoresistance and anisotropic AC magnetoresistance in granular magnetic alloys|A. B. Pakhomov,J. C. Denardin,M. Knobel,O. F. de Lima###
(159208, 159208)
 A sharppeak of zero-field resistance, which scales with frequency, and an associatedisotropic giant AC magnetoresistance in small fields are observed around thetemperature of collective freezing of interacting magnetic moments.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, -60, 'kOe', 1],[57.0, 60, 'kOe', 1],[58.0, 20, 'kOe', 1]

C
###Giant AC magnetoresistance and anisotropic AC magnetoresistance in granular magnetic alloys|A. B. Pakhomov,J. C. Denardin,M. Knobel,O. F. de Lima###
(159252, 159252)
 Anomalousbehavior of AC resistance in large fields (Hdc > 20 kOe) is observed in a muchbroader temperature range.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, -60, 'kOe', 2],[101.0, 60, 'kOe', 2],[14.0, 20, 'kOe', 0]

C
###Giant AC magnetoresistance and anisotropic AC magnetoresistance in granular magnetic alloys|A. B. Pakhomov,J. C. Denardin,M. Knobel,O. F. de Lima###
(159326, 159326)
 We call it anisotropic ACmagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, -60, 'kOe', 4],[175.0, 60, 'kOe', 4],[60.0, 20, 'kOe', 2]

Tl
###Measuring anisotropic scattering in the cuprates|K. G. Sandeman,A. J. Schofield###
(159470, 159470)
We compare this model with experiments on overdoped Tl-2201 and find reasonableagreement using only weak scattering anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tl
###Measuring anisotropic scattering in the cuprates|K. G. Sandeman,A. J. Schofield###
(159505, 159505)
 We argue that optimally dopedTl-2201 should show strong angular-dependent magnetoresistance within thismodel and would provide a robust way of determining the in-plane scatteringanisotropy in the cuprates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Current induced switching of magnetic domains to a perpendicular configuration|Xavier Waintal,Piet W. Brouwer###
(159591, 159591)
 In a ferromagnet--normal-metal--ferromagnet trilayer, a current flowingperpendicularly to the layers creates a torque on the magnetic moments of theferromagnets.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Current induced switching of magnetic domains to a perpendicular configuration|Xavier Waintal,Piet W. Brouwer###
(159732, 159732)
 In addition, whereas the conductance for paralleland antiparallel magnetic moments is the same, signalling the absence of giantmagnetoresistance in the usual sense, the conductance is greater in theperpendicular configuration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SiGe
###Interaction effects and the metallic phase in p-SiGe|P. T. Coleridge,A. S. Sachrajda,P. Zawadzki###
(159857, 159858)
Interaction effects and the metallic phase in p<missing VAR>-SiGe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SiGe
###Interaction effects and the metallic phase in p-SiGe|P. T. Coleridge,A. S. Sachrajda,P. Zawadzki###
(159873, 159874)
 Magnetoresistance results are presented for p<missing VAR>-SiGe samples on the metallicside of the B0 metal-insulator transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B0
###Interaction effects and the metallic phase in p-SiGe|P. T. Coleridge,A. S. Sachrajda,P. Zawadzki###
(159891, 159892)
 Magnetoresistance results are presented for p<missing VAR>-SiGe samples on the metallicside of the B0 metal-insulator transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Interaction effects and the metallic phase in p-SiGe|P. T. Coleridge,A. S. Sachrajda,P. Zawadzki###
(159947, 159947)
 In particular no logarithmic dependence ontemperature is observed, at low fields, in either the longitudinal or Hallresistivities despite evidence in the magnetoresistance of weak localisationeffects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Field-induced metal-insulator transition in a two-dimensional organic superconductor|J. Wosnitza,S. Wanka,J. Hagel,H. v. Loehneysen,J. S. Qualls,J. S. Brooks,E. Balthes,J. A. Schlueter,U. Geiser,J. Mohtasham,R. W. Winter,G. L. Gard###
(160142, 160142)
 The quasi-two-dimensional organic superconductorbeta-(BEDT-TTF)2SF5CH2CF2SO3 (Tc approx 4.4 K)shows very strongShubnikov-de Haas (SdH) oscillations which are superimposed on a highlyanomalous steady background magnetoresistance, Rb.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 4.4, 'K', 0]

F
###Field-induced metal-insulator transition in a two-dimensional organic superconductor|J. Wosnitza,S. Wanka,J. Hagel,H. v. Loehneysen,J. S. Qualls,J. S. Brooks,E. Balthes,J. A. Schlueter,U. Geiser,J. Mohtasham,R. W. Winter,G. L. Gard###
(160149, 160149)
 The quasi-two-dimensional organic superconductorbeta-(BEDT-TTF)2SF5CH2CF2SO3 (Tc approx 4.4 K)shows very strongShubnikov-de Haas (SdH) oscillations which are superimposed on a highlyanomalous steady background magnetoresistance, Rb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 4.4, 'K', 0]

SF5CH2CF2SO3
###Field-induced metal-insulator transition in a two-dimensional organic superconductor|J. Wosnitza,S. Wanka,J. Hagel,H. v. Loehneysen,J. S. Qualls,J. S. Brooks,E. Balthes,J. A. Schlueter,U. Geiser,J. Mohtasham,R. W. Winter,G. L. Gard###
(160152, 160163)
 The quasi-two-dimensional organic superconductorbeta-(BEDT-TTF)2SF5CH2CF2SO3 (Tc approx 4.4 K)shows very strongShubnikov-de Haas (SdH) oscillations which are superimposed on a highlyanomalous steady background magnetoresistance, Rb.
Featurization terminated normally.
0.125,0,0,0,0,0.125,0,0.1875,0.4375,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 4.4, 'K', 0]

H
###Field-induced metal-insulator transition in a two-dimensional organic superconductor|J. Wosnitza,S. Wanka,J. Hagel,H. v. Loehneysen,J. S. Qualls,J. S. Brooks,E. Balthes,J. A. Schlueter,U. Geiser,J. Mohtasham,R. W. Winter,G. L. Gard###
(160187, 160187)
 The quasi-two-dimensional organic superconductorbeta-(BEDT-TTF)2SF5CH2CF2SO3 (Tc approx 4.4 K)shows very strongShubnikov-de Haas (SdH) oscillations which are superimposed on a highlyanomalous steady background magnetoresistance, Rb.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 4.4, 'K', 0]

H
###Field-induced metal-insulator transition in a two-dimensional organic superconductor|J. Wosnitza,S. Wanka,J. Hagel,H. v. Loehneysen,J. S. Qualls,J. S. Brooks,E. Balthes,J. A. Schlueter,U. Geiser,J. Mohtasham,R. W. Winter,G. L. Gard###
(160267, 160267)
 Comparison with de Haas-van Alphen oscillations allow a reliable estimate of Rb which is crucial forthe correct extraction of the SdH signal.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 4.4, 'K', 1]

At
###Field-induced metal-insulator transition in a two-dimensional organic superconductor|J. Wosnitza,S. Wanka,J. Hagel,H. v. Loehneysen,J. S. Qualls,J. S. Brooks,E. Balthes,J. A. Schlueter,U. Geiser,J. Mohtasham,R. W. Winter,G. L. Gard###
(160272, 160272)
 At low temperatures and high magneticfields insulating behavior evolves.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 4.4, 'K', 2]

GaAs/AlGaAs
###Fermi-liquid behaviour of the low-density 2D hole gas in GaAs/AlGaAs heterostructure at large values of r_s|Y. Y. Proskuryakov,A. K. Savchenko,S. S. Safonov,M. Pepper,M. Y. Simmons,D. A. Ritchie###
(160398, 160403)
Fermi-liquid behaviour of the low-density 2D hole gas in GaAs/AlGaAs heterostructure at large values of rs.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[8.0, 2, 'D', 0],[39.0, 2, 'D', 1],[92.0, 29, ',', 2]

DyFe2/YFe2
###Giant Magnetoresistance by Exchange Springs in DyFe$_2$/YFe$_2$ Superlattices|S. N. Gordeev,J-M. L. Beaujour,G. J. Bowden,P. A. J. de Groot,B. D. Rainford,R. C. C. Ward,M. R . Wells,A. G. M. Jansen###
(160862, 160868)
Giant Magnetoresistance by Exchange Springs in DyFe2/YFe2 Superlattices.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[67.0, 2, 'nm', 2],[104.0, 32, '%', 2]

DyFe2/YFe2
###Giant Magnetoresistance by Exchange Springs in DyFe$_2$/YFe$_2$ Superlattices|S. N. Gordeev,J-M. L. Beaujour,G. J. Bowden,P. A. J. de Groot,B. D. Rainford,R. C. C. Ward,M. R . Wells,A. G. M. Jansen###
(160892, 160898)
 Magnetization and magnetoresistance measurements are reported forantiferromagnetically coupled DyFe2/YFe2 multilayers in fields up to 23T<missing VAR>.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[37.0, 2, 'nm', 1],[74.0, 32, '%', 1]

YFe2
###Giant Magnetoresistance by Exchange Springs in DyFe$_2$/YFe$_2$ Superlattices|S. N. Gordeev,J-M. L. Beaujour,G. J. Bowden,P. A. J. de Groot,B. D. Rainford,R. C. C. Ward,M. R . Wells,A. G. M. Jansen###
(160947, 160949)
 We demonstrate that the formation of short exchange springs ( 2 nm) in themagnetically soft YFe2 layers results in a giant magneto-resistance as highas 32% in the spring region.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 2, 'nm', 0],[23.0, 32, '%', 0]

In
###Magnetic field effects on two-dimensional Kagome lattices|Takashi Kimura,Hiroyuki Tamura,Kenji Shiraishi,Hideaki Takayanagi###
(161217, 161217)
 In the half-filled flat band, theferromagnetic-paramagnetic transition and the metal-insulator one occursimultaneously at a magnetic field for strongly interacting electrons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YBa2Cu3O
###Magnetotransport Mechanisms in Strongly Underdoped YBa_2Cu_3O_x Single Crystals|E. Cimpoiasu,G. A. Levin,C. C. Almasan,A. P. Paulikas,B. W. Veal###
(161328, 161333)
Magnetotransport Mechanisms in Strongly Underdoped YBa2Cu3Ox<missing VAR> Single Crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 6.25, ',', 1]

YBa2Cu3O
###Magnetotransport Mechanisms in Strongly Underdoped YBa_2Cu_3O_x Single Crystals|E. Cimpoiasu,G. A. Levin,C. C. Almasan,A. P. Paulikas,B. W. Veal###
(161355, 161360)
 We report magnetoresistivity measurements on strongly underdoped YBa2Cu3Ox<missing VAR>(x<missing VAR>6.25, 6.36) single crystals in applied magnetic fields H  c<missing VAR>-axis.
Featurization terminated normally.
0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 6.25, ',', 0]

H
###Magnetotransport Mechanisms in Strongly Underdoped YBa_2Cu_3O_x Single Crystals|E. Cimpoiasu,G. A. Levin,C. C. Almasan,A. P. Paulikas,B. W. Veal###
(161384, 161384)
 We report magnetoresistivity measurements on strongly underdoped YBa2Cu3Ox<missing VAR>(x<missing VAR>6.25, 6.36) single crystals in applied magnetic fields H  c<missing VAR>-axis.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 6.25, ',', 0]

CaVO3
###High-Field Properties of Single-Crystalline Cavo3|M. H. Jung,I. H. Inoue,H. Nakotte,A. H. Lacerda###
(161574, 161577)
 The magnetic properties of perovskite CaVO3 single crystals have been studiedby means of magnetoresistance r(T, H) and magnetization M<missing VAR>(H) measurements infields to 18T.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 18, 'T', 0],[50.0, 2, 'K', 1],[84.0, 16.5, '%', 1],[113.0, 2, 'K', 2],[129.0, 0.03, ',', 2],[132.0, 0.05, ',', 2],[134.0, 0.17, 'mB', 2]

H
###High-Field Properties of Single-Crystalline Cavo3|M. H. Jung,I. H. Inoue,H. Nakotte,A. H. Lacerda###
(161603, 161603)
 The magnetic properties of perovskite CaVO3 single crystals have been studiedby means of magnetoresistance r(T, H) and magnetization M<missing VAR>(H) measurements infields to 18T.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 18, 'T', 0],[24.0, 2, 'K', 1],[58.0, 16.5, '%', 1],[87.0, 2, 'K', 2],[103.0, 0.03, ',', 2],[106.0, 0.05, ',', 2],[108.0, 0.17, 'mB', 2]

(H)
###High-Field Properties of Single-Crystalline Cavo3|M. H. Jung,I. H. Inoue,H. Nakotte,A. H. Lacerda###
(161611, 161613)
 The magnetic properties of perovskite CaVO3 single crystals have been studiedby means of magnetoresistance r(T, H) and magnetization M<missing VAR>(H) measurements infields to 18T.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 18, 'T', 0],[14.0, 2, 'K', 1],[48.0, 16.5, '%', 1],[77.0, 2, 'K', 2],[93.0, 0.03, ',', 2],[96.0, 0.05, ',', 2],[98.0, 0.17, 'mB', 2]

At
###High-Field Properties of Single-Crystalline Cavo3|M. H. Jung,I. H. Inoue,H. Nakotte,A. H. Lacerda###
(161626, 161626)
 At 2 K, the magnetoresistance is positive and a maximum value ofDr(18T)/r<missing VAR>(0)  16.5% is found for H//a.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 18, 'T', 1],[1.0, 2, 'K', 0],[35.0, 16.5, '%', 0],[64.0, 2, 'K', 1],[80.0, 0.03, ',', 1],[83.0, 0.05, ',', 1],[85.0, 0.17, 'mB', 1]

H
###High-Field Properties of Single-Crystalline Cavo3|M. H. Jung,I. H. Inoue,H. Nakotte,A. H. Lacerda###
(161670, 161670)
 At 2 K, the magnetoresistance is positive and a maximum value ofDr(18T)/r<missing VAR>(0)  16.5% is found for H//a.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 18, 'T', 1],[43.0, 2, 'K', 0],[9.0, 16.5, '%', 0],[20.0, 2, 'K', 1],[36.0, 0.03, ',', 1],[39.0, 0.05, ',', 1],[41.0, 0.17, 'mB', 1]

H
###High-Field Properties of Single-Crystalline Cavo3|M. H. Jung,I. H. Inoue,H. Nakotte,A. H. Lacerda###
(161720, 161720)
 for H//a,H//b<missing VAR>, and H//c<missing VAR>, respectively.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 18, 'T', 3],[93.0, 2, 'K', 2],[59.0, 16.5, '%', 2],[30.0, 2, 'K', 1],[14.0, 0.03, ',', 1],[11.0, 0.05, ',', 1],[9.0, 0.17, 'mB', 1]

H
###High-Field Properties of Single-Crystalline Cavo3|M. H. Jung,I. H. Inoue,H. Nakotte,A. H. Lacerda###
(161727, 161727)
 for H//a,H//b<missing VAR>, and H//c<missing VAR>, respectively.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 18, 'T', 3],[100.0, 2, 'K', 2],[66.0, 16.5, '%', 2],[37.0, 2, 'K', 1],[21.0, 0.03, ',', 1],[18.0, 0.05, ',', 1],[16.0, 0.17, 'mB', 1]

H
###High-Field Properties of Single-Crystalline Cavo3|M. H. Jung,I. H. Inoue,H. Nakotte,A. H. Lacerda###
(161735, 161735)
 for H//a,H//b<missing VAR>, and H//c<missing VAR>, respectively.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 18, 'T', 3],[108.0, 2, 'K', 2],[74.0, 16.5, '%', 2],[45.0, 2, 'K', 1],[29.0, 0.03, ',', 1],[26.0, 0.05, ',', 1],[24.0, 0.17, 'mB', 1]

(H)
###High-Field Properties of Single-Crystalline Cavo3|M. H. Jung,I. H. Inoue,H. Nakotte,A. H. Lacerda###
(161753, 161755)
 This anisotropy found in M<missing VAR>(H) is consistent withthat observed for Dr(H//a) > Dr(H//b) > Dr(H//c).
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 18, 'T', 4],[126.0, 2, 'K', 3],[92.0, 16.5, '%', 3],[63.0, 2, 'K', 2],[47.0, 0.03, ',', 2],[44.0, 0.05, ',', 2],[42.0, 0.17, 'mB', 2]

H
###High-Field Properties of Single-Crystalline Cavo3|M. H. Jung,I. H. Inoue,H. Nakotte,A. H. Lacerda###
(161772, 161772)
 This anisotropy found in M<missing VAR>(H) is consistent withthat observed for Dr(H//a) > Dr(H//b) > Dr(H//c).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 18, 'T', 4],[145.0, 2, 'K', 3],[111.0, 16.5, '%', 3],[82.0, 2, 'K', 2],[66.0, 0.03, ',', 2],[63.0, 0.05, ',', 2],[61.0, 0.17, 'mB', 2]

H
###High-Field Properties of Single-Crystalline Cavo3|M. H. Jung,I. H. Inoue,H. Nakotte,A. H. Lacerda###
(161782, 161782)
 This anisotropy found in M<missing VAR>(H) is consistent withthat observed for Dr(H//a) > Dr(H//b) > Dr(H//c).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[159.0, 18, 'T', 4],[155.0, 2, 'K', 3],[121.0, 16.5, '%', 3],[92.0, 2, 'K', 2],[76.0, 0.03, ',', 2],[73.0, 0.05, ',', 2],[71.0, 0.17, 'mB', 2]

H
###High-Field Properties of Single-Crystalline Cavo3|M. H. Jung,I. H. Inoue,H. Nakotte,A. H. Lacerda###
(161792, 161792)
 This anisotropy found in M<missing VAR>(H) is consistent withthat observed for Dr(H//a) > Dr(H//b) > Dr(H//c).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 18, 'T', 4],[165.0, 2, 'K', 3],[131.0, 16.5, '%', 3],[102.0, 2, 'K', 2],[86.0, 0.03, ',', 2],[83.0, 0.05, ',', 2],[81.0, 0.17, 'mB', 2]

CaVO3
###High-Field Properties of Single-Crystalline Cavo3|M. H. Jung,I. H. Inoue,H. Nakotte,A. H. Lacerda###
(161828, 161831)
 These results can beinterpreted in terms of the field-dependent scattering mechanism of CaVO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, 18, 'T', 5],[201.0, 2, 'K', 4],[167.0, 16.5, '%', 4],[138.0, 2, 'K', 3],[122.0, 0.03, ',', 3],[119.0, 0.05, ',', 3],[117.0, 0.17, 'mB', 3]

Cr
###Tunnel magnetoresistance and interfacial electronic state|J. Inoue,H. Itoh###
(162033, 162033)
 The results are compared with experimental results for Cr-dustedferromagnetic tunnel junctions, and also with results for metallic multilayersfor which similar reduction in giant magnetoresistance has been reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Magnetoresistance in the SDW state of (TMTSF)2PF6 above T*~4K; Novel effect due to the Landau quantization|Bojana Korin-Hamzic,Mario Basletic,Kazumi Maki###
(162095, 162095)
Magnetoresistance in the SD<missing VAR>W state of (TMTSF)2PF6 above T<missing VAR>4K; Novel effect due to the Landau quantization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Magnetoresistance in the SDW state of (TMTSF)2PF6 above T*~4K; Novel effect due to the Landau quantization|Bojana Korin-Hamzic,Mario Basletic,Kazumi Maki###
(162097, 162097)
Magnetoresistance in the SD<missing VAR>W state of (TMTSF)2PF6 above T<missing VAR>4K; Novel effect due to the Landau quantization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Magnetoresistance in the SDW state of (TMTSF)2PF6 above T*~4K; Novel effect due to the Landau quantization|Bojana Korin-Hamzic,Mario Basletic,Kazumi Maki###
(162108, 162108)
Magnetoresistance in the SD<missing VAR>W state of (TMTSF)2PF6 above T<missing VAR>4K; Novel effect due to the Landau quantization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PF6
###Magnetoresistance in the SDW state of (TMTSF)2PF6 above T*~4K; Novel effect due to the Landau quantization|Bojana Korin-Hamzic,Mario Basletic,Kazumi Maki###
(162111, 162113)
Magnetoresistance in the SD<missing VAR>W state of (TMTSF)2PF6 above T<missing VAR>4K; Novel effect due to the Landau quantization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.8571428571428571,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Magnetoresistance in the SDW state of (TMTSF)2PF6 above T*~4K; Novel effect due to the Landau quantization|Bojana Korin-Hamzic,Mario Basletic,Kazumi Maki###
(162119, 162119)
Magnetoresistance in the SD<missing VAR>W state of (TMTSF)2PF6 above T<missing VAR>4K; Novel effect due to the Landau quantization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Magnetoresistance in the SDW state of (TMTSF)2PF6 above T*~4K; Novel effect due to the Landau quantization|Bojana Korin-Hamzic,Mario Basletic,Kazumi Maki###
(162150, 162150)
 Magnetoresistance in the spin-density wave (SD<missing VAR>W) state of (TMTSF)2PF6 isknown to exhibit a rich variety of the angular dependencies when a magneticfield B is rotated in the b-c, a-b<missing VAR> and a-c<missing VAR> planes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Magnetoresistance in the SDW state of (TMTSF)2PF6 above T*~4K; Novel effect due to the Landau quantization|Bojana Korin-Hamzic,Mario Basletic,Kazumi Maki###
(162152, 162152)
 Magnetoresistance in the spin-density wave (SD<missing VAR>W) state of (TMTSF)2PF6 isknown to exhibit a rich variety of the angular dependencies when a magneticfield B is rotated in the b-c, a-b<missing VAR> and a-c<missing VAR> planes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Magnetoresistance in the SDW state of (TMTSF)2PF6 above T*~4K; Novel effect due to the Landau quantization|Bojana Korin-Hamzic,Mario Basletic,Kazumi Maki###
(162164, 162164)
 Magnetoresistance in the spin-density wave (SD<missing VAR>W) state of (TMTSF)2PF6 isknown to exhibit a rich variety of the angular dependencies when a magneticfield B is rotated in the b-c, a-b<missing VAR> and a-c<missing VAR> planes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PF6
###Magnetoresistance in the SDW state of (TMTSF)2PF6 above T*~4K; Novel effect due to the Landau quantization|Bojana Korin-Hamzic,Mario Basletic,Kazumi Maki###
(162167, 162169)
 Magnetoresistance in the spin-density wave (SD<missing VAR>W) state of (TMTSF)2PF6 isknown to exhibit a rich variety of the angular dependencies when a magneticfield B is rotated in the b-c, a-b<missing VAR> and a-c<missing VAR> planes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.8571428571428571,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Magnetoresistance in the SDW state of (TMTSF)2PF6 above T*~4K; Novel effect due to the Landau quantization|Bojana Korin-Hamzic,Mario Basletic,Kazumi Maki###
(162203, 162203)
 Magnetoresistance in the spin-density wave (SD<missing VAR>W) state of (TMTSF)2PF6 isknown to exhibit a rich variety of the angular dependencies when a magneticfield B is rotated in the b-c, a-b<missing VAR> and a-c<missing VAR> planes.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magnetoresistance in the SDW state of (TMTSF)2PF6 above T*~4K; Novel effect due to the Landau quantization|Bojana Korin-Hamzic,Mario Basletic,Kazumi Maki###
(162231, 162231)
 In the presence of amagnetic field the quasiparticle spectrum in the SD<missing VAR>W with imperfect nesting isquantized.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Magnetoresistance in the SDW state of (TMTSF)2PF6 above T*~4K; Novel effect due to the Landau quantization|Bojana Korin-Hamzic,Mario Basletic,Kazumi Maki###
(162256, 162256)
 In the presence of amagnetic field the quasiparticle spectrum in the SD<missing VAR>W with imperfect nesting isquantized.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Magnetoresistance in the SDW state of (TMTSF)2PF6 above T*~4K; Novel effect due to the Landau quantization|Bojana Korin-Hamzic,Mario Basletic,Kazumi Maki###
(162258, 162258)
 In the presence of amagnetic field the quasiparticle spectrum in the SD<missing VAR>W with imperfect nesting isquantized.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magnetoresistance in the SDW state of (TMTSF)2PF6 above T*~4K; Novel effect due to the Landau quantization|Bojana Korin-Hamzic,Mario Basletic,Kazumi Maki###
(162272, 162272)
 In such a case the minimum quasiparticle energy depends both on themagnetic field strength B and the angle theta between the field and thecrystal direction a, b<missing VAR> or c<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Magnetoresistance in the SDW state of (TMTSF)2PF6 above T*~4K; Novel effect due to the Landau quantization|Bojana Korin-Hamzic,Mario Basletic,Kazumi Maki###
(162303, 162303)
 In such a case the minimum quasiparticle energy depends both on themagnetic field strength B and the angle theta between the field and thecrystal direction a, b<missing VAR> or c<missing VAR>.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Magnetoresistance in the SDW state of (TMTSF)2PF6 above T*~4K; Novel effect due to the Landau quantization|Bojana Korin-Hamzic,Mario Basletic,Kazumi Maki###
(162357, 162357)
 This approach describes rather satisfactory themagnetoresistance above T<missing VAR>4K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Superconductivity, incoherence and Anderson localization in the crystalline organic conductor (BEDT-TTF)_3Cl_2.2H_2O at high pressures|Paul Goddard,Stanley W. Tozer,John Singleton,Arzhang Ardavan,Adam Abate,Mohamedally Kurmoo###
(162390, 162390)
Superconductivity, incoherence and Anderson localization in the crystalline organic conductor (BEDT-TTF)3Cl2.2H2O at high pressures.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 13.5, 'and', 1],[69.0, 14.0, 'kbar', 1],[195.0, 13.5, 'kbar', 3]

F
###Superconductivity, incoherence and Anderson localization in the crystalline organic conductor (BEDT-TTF)_3Cl_2.2H_2O at high pressures|Paul Goddard,Stanley W. Tozer,John Singleton,Arzhang Ardavan,Adam Abate,Mohamedally Kurmoo###
(162397, 162397)
Superconductivity, incoherence and Anderson localization in the crystalline organic conductor (BEDT-TTF)3Cl2.2H2O at high pressures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 13.5, 'and', 1],[62.0, 14.0, 'kbar', 1],[188.0, 13.5, 'kbar', 3]

Cl2.2H2O
###Superconductivity, incoherence and Anderson localization in the crystalline organic conductor (BEDT-TTF)_3Cl_2.2H_2O at high pressures|Paul Goddard,Stanley W. Tozer,John Singleton,Arzhang Ardavan,Adam Abate,Mohamedally Kurmoo###
(162400, 162404)
Superconductivity, incoherence and Anderson localization in the crystalline organic conductor (BEDT-TTF)3Cl2.2H2O at high pressures.
Featurization terminated normally.
0.3846153846153846,0,0,0,0,0,0,0.1923076923076923,0,0,0,0,0,0,0,0,0.4230769230769231,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 13.5, 'and', 1],[55.0, 14.0, 'kbar', 1],[181.0, 13.5, 'kbar', 3]

B
###Superconductivity, incoherence and Anderson localization in the crystalline organic conductor (BEDT-TTF)_3Cl_2.2H_2O at high pressures|Paul Goddard,Stanley W. Tozer,John Singleton,Arzhang Ardavan,Adam Abate,Mohamedally Kurmoo###
(162436, 162436)
 The conducting properties of the pressure-induced, layered organicsuperconductor (BEDT-TTF)3Cl2.2H20 have been studied at 13.5 and 14.0 kbarusing low temperatures, high magnetic fields and two-axis rotation.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 13.5, 'and', 0],[23.0, 14.0, 'kbar', 0],[149.0, 13.5, 'kbar', 2]

F
###Superconductivity, incoherence and Anderson localization in the crystalline organic conductor (BEDT-TTF)_3Cl_2.2H_2O at high pressures|Paul Goddard,Stanley W. Tozer,John Singleton,Arzhang Ardavan,Adam Abate,Mohamedally Kurmoo###
(162443, 162443)
 The conducting properties of the pressure-induced, layered organicsuperconductor (BEDT-TTF)3Cl2.2H20 have been studied at 13.5 and 14.0 kbarusing low temperatures, high magnetic fields and two-axis rotation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 13.5, 'and', 0],[16.0, 14.0, 'kbar', 0],[142.0, 13.5, 'kbar', 2]

Cl2.2H20
###Superconductivity, incoherence and Anderson localization in the crystalline organic conductor (BEDT-TTF)_3Cl_2.2H_2O at high pressures|Paul Goddard,Stanley W. Tozer,John Singleton,Arzhang Ardavan,Adam Abate,Mohamedally Kurmoo###
(162446, 162449)
 The conducting properties of the pressure-induced, layered organicsuperconductor (BEDT-TTF)3Cl2.2H20 have been studied at 13.5 and 14.0 kbarusing low temperatures, high magnetic fields and two-axis rotation.
Featurization terminated normally.
0.9009009009009009,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.09909909909909911,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 13.5, 'and', 0],[10.0, 14.0, 'kbar', 0],[136.0, 13.5, 'kbar', 2]

GaAs
###Spin polarization and transition from metallic to insulating behavior in 2D systems|E. Tutuc,E. P. De Poortere,S. J. Papadakis,M. Shayegan###
(162691, 162692)
 We have made quantitative measurements of the spin polarization oftwo-dimensional (2D) GaAs (100) electrons and GaAs (311)A holes, as a functionof an in-plane magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 2, 'D', 1],[88.0, 2, 'D', 2]

GaAs
###Spin polarization and transition from metallic to insulating behavior in 2D systems|E. Tutuc,E. P. De Poortere,S. J. Papadakis,M. Shayegan###
(162702, 162703)
 We have made quantitative measurements of the spin polarization oftwo-dimensional (2D) GaAs (100) electrons and GaAs (311)A holes, as a functionof an in-plane magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 2, 'D', 1],[77.0, 2, 'D', 2]

GaAs
###Spin polarization and transition from metallic to insulating behavior in 2D systems|E. Tutuc,E. P. De Poortere,S. J. Papadakis,M. Shayegan###
(162787, 162788)
Moreover, for three different 2D systems, namely GaAs (100) electrons, GaAs(311)A holes, and AlAs (411)B electrons, the temperature dependence of thein-plane magnetoresistance reveals that their behavior turns from metallic toinsulating before they are fully spin polarized.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 2, 'D', 3],[7.0, 2, 'D', 0]

GaAs
###Spin polarization and transition from metallic to insulating behavior in 2D systems|E. Tutuc,E. P. De Poortere,S. J. Papadakis,M. Shayegan###
(162797, 162798)
Moreover, for three different 2D systems, namely GaAs (100) electrons, GaAs(311)A holes, and AlAs (411)B electrons, the temperature dependence of thein-plane magnetoresistance reveals that their behavior turns from metallic toinsulating before they are fully spin polarized.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 2, 'D', 3],[17.0, 2, 'D', 0]

AlAs
###Spin polarization and transition from metallic to insulating behavior in 2D systems|E. Tutuc,E. P. De Poortere,S. J. Papadakis,M. Shayegan###
(162811, 162812)
Moreover, for three different 2D systems, namely GaAs (100) electrons, GaAs(311)A holes, and AlAs (411)B electrons, the temperature dependence of thein-plane magnetoresistance reveals that their behavior turns from metallic toinsulating before they are fully spin polarized.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 2, 'D', 3],[31.0, 2, 'D', 0]

B
###Spin polarization and transition from metallic to insulating behavior in 2D systems|E. Tutuc,E. P. De Poortere,S. J. Papadakis,M. Shayegan###
(162817, 162817)
Moreover, for three different 2D systems, namely GaAs (100) electrons, GaAs(311)A holes, and AlAs (411)B electrons, the temperature dependence of thein-plane magnetoresistance reveals that their behavior turns from metallic toinsulating before they are fully spin polarized.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 2, 'D', 3],[37.0, 2, 'D', 0]

Fe/Cr
###Coexistence of glassy antiferromagnetism and giant magnetoresistance (GMR) in Fe/Cr multilayer structures|N. Theodoropoulou,A. F. Hebard,M. Gabay,A. K. Majumdar,C. Pace,J. Lannon,D. Temple###
(162901, 162903)
Coexistence of glassy antiferromagnetism and giant magnetoresistance (GMR) in Fe/Cr multilayer structures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[115.0, 140, 'K', 2]

Fe/Cr
###Coexistence of glassy antiferromagnetism and giant magnetoresistance (GMR) in Fe/Cr multilayer structures|N. Theodoropoulou,A. F. Hebard,M. Gabay,A. K. Majumdar,C. Pace,J. Lannon,D. Temple###
(162927, 162929)
 Using temperature-dependent magnetoresistance and magnetization measurementson Fe/Cr multilayers that exhibit pronounced giant magnetoresistance (GMR), wehave found evidence for the presence of a glassy antiferromagnetic (G<missing VAR>AF) phase.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[89.0, 140, 'K', 1]

F
###Coexistence of glassy antiferromagnetism and giant magnetoresistance (GMR) in Fe/Cr multilayer structures|N. Theodoropoulou,A. F. Hebard,M. Gabay,A. K. Majumdar,C. Pace,J. Lannon,D. Temple###
(162976, 162976)
 Using temperature-dependent magnetoresistance and magnetization measurementson Fe/Cr multilayers that exhibit pronounced giant magnetoresistance (GMR), wehave found evidence for the presence of a glassy antiferromagnetic (G<missing VAR>AF) phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 140, 'K', 1]

I
###Coexistence of glassy antiferromagnetism and giant magnetoresistance (GMR) in Fe/Cr multilayer structures|N. Theodoropoulou,A. F. Hebard,M. Gabay,A. K. Majumdar,C. Pace,J. Lannon,D. Temple###
(163002, 163002)
This phase reflects the influence of interlayer exchange coupling (IE<missing VAR>C) at lowtemperature (T<missing VAR> < 140K) and is characterized by a field-independent glassytransition temperature, Tg, together with irreversible behavior havinglogarithmic time dependence below a de Almeida and Thouless (AT) criticalfield line.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 140, 'K', 0]

C
###Coexistence of glassy antiferromagnetism and giant magnetoresistance (GMR) in Fe/Cr multilayer structures|N. Theodoropoulou,A. F. Hebard,M. Gabay,A. K. Majumdar,C. Pace,J. Lannon,D. Temple###
(163004, 163004)
This phase reflects the influence of interlayer exchange coupling (IE<missing VAR>C) at lowtemperature (T<missing VAR> < 140K) and is characterized by a field-independent glassytransition temperature, Tg, together with irreversible behavior havinglogarithmic time dependence below a de Almeida and Thouless (AT) criticalfield line.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 140, 'K', 0]

At
###Coexistence of glassy antiferromagnetism and giant magnetoresistance (GMR) in Fe/Cr multilayer structures|N. Theodoropoulou,A. F. Hebard,M. Gabay,A. K. Majumdar,C. Pace,J. Lannon,D. Temple###
(163088, 163088)
 At room temperature, where the GMR effect is still robust, IE<missing VAR>Cplays only a minor role, and it is the random potential variations acting onthe magnetic domains that are responsible for the antiparallel interlayerdomain alignment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 140, 'K', 1]

I
###Coexistence of glassy antiferromagnetism and giant magnetoresistance (GMR) in Fe/Cr multilayer structures|N. Theodoropoulou,A. F. Hebard,M. Gabay,A. K. Majumdar,C. Pace,J. Lannon,D. Temple###
(163112, 163112)
 At room temperature, where the GMR effect is still robust, IE<missing VAR>Cplays only a minor role, and it is the random potential variations acting onthe magnetic domains that are responsible for the antiparallel interlayerdomain alignment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 140, 'K', 1]

C
###Coexistence of glassy antiferromagnetism and giant magnetoresistance (GMR) in Fe/Cr multilayer structures|N. Theodoropoulou,A. F. Hebard,M. Gabay,A. K. Majumdar,C. Pace,J. Lannon,D. Temple###
(163114, 163114)
 At room temperature, where the GMR effect is still robust, IE<missing VAR>Cplays only a minor role, and it is the random potential variations acting onthe magnetic domains that are responsible for the antiparallel interlayerdomain alignment.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 140, 'K', 1]

La0.7Ce0.3MnO3
###Observation of minority spin character of the new electron doped manganite La_0.7Ce_0.3MnO_3 from tunneling magnetoresistance|C. Mitra,P. Raychaudhuri,K. Doerr,K. -H. Mueller,L. Schultz,P. M. Oppeneer,S. Wirth###
(163203, 163209)
Observation of minority spin character of the new electron doped manganite La0.7Ce0.3MnO3 from tunneling magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(La0.7Ce0.3MnO3)
###Observation of minority spin character of the new electron doped manganite La_0.7Ce_0.3MnO_3 from tunneling magnetoresistance|C. Mitra,P. Raychaudhuri,K. Doerr,K. -H. Mueller,L. Schultz,P. M. Oppeneer,S. Wirth###
(163253, 163261)
 We report the magnetotransport characteristics of a trilayer ferromagnetictunnel junction build of an electron doped manganite (La0.7Ce0.3MnO3) and ahole doped manganite (La0.7Ca0.3MnO3).
Featurization successful!
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(La0.7Ca0.3MnO3)
###Observation of minority spin character of the new electron doped manganite La_0.7Ce_0.3MnO_3 from tunneling magnetoresistance|C. Mitra,P. Raychaudhuri,K. Doerr,K. -H. Mueller,L. Schultz,P. M. Oppeneer,S. Wirth###
(163274, 163282)
 We report the magnetotransport characteristics of a trilayer ferromagnetictunnel junction build of an electron doped manganite (La0.7Ce0.3MnO3) and ahole doped manganite (La0.7Ca0.3MnO3).
Featurization successful!
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Observation of minority spin character of the new electron doped manganite La_0.7Ce_0.3MnO_3 from tunneling magnetoresistance|C. Mitra,P. Raychaudhuri,K. Doerr,K. -H. Mueller,L. Schultz,P. M. Oppeneer,S. Wirth###
(163285, 163285)
 At low temperatures the junctionexhibits a large positive tunneling magnetoresistance (TMR), irrespective ofthe bias voltage.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Observation of minority spin character of the new electron doped manganite La_0.7Ce_0.3MnO_3 from tunneling magnetoresistance|C. Mitra,P. Raychaudhuri,K. Doerr,K. -H. Mueller,L. Schultz,P. M. Oppeneer,S. Wirth###
(163327, 163327)
 At intermediate temperatures below T<missing VAR>C the sign of the TMR isdependent on the bias voltage across the junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Observation of minority spin character of the new electron doped manganite La_0.7Ce_0.3MnO_3 from tunneling magnetoresistance|C. Mitra,P. Raychaudhuri,K. Doerr,K. -H. Mueller,L. Schultz,P. M. Oppeneer,S. Wirth###
(163336, 163336)
 At intermediate temperatures below T<missing VAR>C the sign of the TMR isdependent on the bias voltage across the junction.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.7Ce0.3MnO3
###Observation of minority spin character of the new electron doped manganite La_0.7Ce_0.3MnO_3 from tunneling magnetoresistance|C. Mitra,P. Raychaudhuri,K. Doerr,K. -H. Mueller,L. Schultz,P. M. Oppeneer,S. Wirth###
(163389, 163395)
 The magnetoresistivecharacteristics of the junction strongly suggest that La0.7Ce0.3MnO3 is aminority spin carrier ferromagnet with a high degree of spin polarization, i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Interaction Effects in Conductivity of Si Inversion Layers at Intermediate Temperatures|V. M. Pudalov,M. E. Gershenson,H. Kojima,G. Brunthaler,A. Prinz,G. Bauer###
(163458, 163458)
Interaction Effects in Conductivity of Si Inversion Layers at Intermediate Temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Interaction Effects in Conductivity of Si Inversion Layers at Intermediate Temperatures|V. M. Pudalov,M. E. Gershenson,H. Kojima,G. Brunthaler,A. Prinz,G. Bauer###
(163492, 163492)
 We compare the temperature dependence of resistivity rho(T) of Si M<missing VAR>OSFE<missing VAR>Tswith the recent theory by Zala et al.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OSF
###Interaction Effects in Conductivity of Si Inversion Layers at Intermediate Temperatures|V. M. Pudalov,M. E. Gershenson,H. Kojima,G. Brunthaler,A. Prinz,G. Bauer###
(163495, 163497)
 We compare the temperature dependence of resistivity rho(T) of Si M<missing VAR>OSFE<missing VAR>Tswith the recent theory by Zala et al.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(B)
###Interaction Effects in Conductivity of Si Inversion Layers at Intermediate Temperatures|V. M. Pudalov,M. E. Gershenson,H. Kojima,G. Brunthaler,A. Prinz,G. Bauer###
(163639, 163641)
 The in-planemagnetoresistance rho(B) is qualitatively consistent with the theory; however,the lack of quantitative agreement indicates that the magnetoresistance is moresusceptible to the sample-specific effects than rho(T).
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.7Ce0.3MnO3
###Direct observation of electron doping in La0.7Ce0.3MnO3 using x-ray absorption spectroscopy|C. Mitra,Z. Hu,P. Raychaudhuri,S. Wirth,S. I. Csiszar,H. H. Hsieh,H. J. Lin,C. T. Chen,L. H. Tjeng###
(163723, 163729)
Direct observation of electron doping in La0.7Ce0.3MnO3 using x<missing VAR>-ray absorption spectroscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Direct observation of electron doping in La0.7Ce0.3MnO3 using x-ray absorption spectroscopy|C. Mitra,Z. Hu,P. Raychaudhuri,S. Wirth,S. I. Csiszar,H. H. Hsieh,H. J. Lin,C. T. Chen,L. H. Tjeng###
(163761, 163761)
 We report on a X<missing VAR>-ray absorption spectroscopic (X<missing VAR>AS) study on a thin film ofLa0.7Ce0.3MnO3, a manganite which was previously only speculated to be anelectron doped system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.7Ce0.3MnO3
###Direct observation of electron doping in La0.7Ce0.3MnO3 using x-ray absorption spectroscopy|C. Mitra,Z. Hu,P. Raychaudhuri,S. Wirth,S. I. Csiszar,H. H. Hsieh,H. J. Lin,C. T. Chen,L. H. Tjeng###
(163777, 163783)
 We report on a X<missing VAR>-ray absorption spectroscopic (X<missing VAR>AS) study on a thin film ofLa0.7Ce0.3MnO3, a manganite which was previously only speculated to be anelectron doped system.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ce(IV)
###Direct observation of electron doping in La0.7Ce0.3MnO3 using x-ray absorption spectroscopy|C. Mitra,Z. Hu,P. Raychaudhuri,S. Wirth,S. I. Csiszar,H. H. Hsieh,H. J. Lin,C. T. Chen,L. H. Tjeng###
(163835, 163839)
 The measurements clearly show that the cerium is in theCe(IV) valence state and that the manganese is present in a mixture of Mn2 andMn3 valence states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn2
###Direct observation of electron doping in La0.7Ce0.3MnO3 using x-ray absorption spectroscopy|C. Mitra,Z. Hu,P. Raychaudhuri,S. Wirth,S. I. Csiszar,H. H. Hsieh,H. J. Lin,C. T. Chen,L. H. Tjeng###
(163865, 163866)
 The measurements clearly show that the cerium is in theCe(IV) valence state and that the manganese is present in a mixture of Mn2 andMn3 valence states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn3
###Direct observation of electron doping in La0.7Ce0.3MnO3 using x-ray absorption spectroscopy|C. Mitra,Z. Hu,P. Raychaudhuri,S. Wirth,S. I. Csiszar,H. H. Hsieh,H. J. Lin,C. T. Chen,L. H. Tjeng###
(163871, 163872)
 The measurements clearly show that the cerium is in theCe(IV) valence state and that the manganese is present in a mixture of Mn2 andMn3 valence states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.7Ce0.3MnO3
###Direct observation of electron doping in La0.7Ce0.3MnO3 using x-ray absorption spectroscopy|C. Mitra,Z. Hu,P. Raychaudhuri,S. Wirth,S. I. Csiszar,H. H. Hsieh,H. J. Lin,C. T. Chen,L. H. Tjeng###
(163889, 163895)
 These data unambiguously demonstrate that La0.7Ce0.3MnO3is an electron doped colossal magnetoresistive manganite, a finding that mayopen up new opportunities both for device applications as well as for furtherbasic research towards a better modelling of the colossal magnetoresistancephenomenon in these materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###Small-angle scattering in a marginal Fermi-liquid|E. C. Carter,A. J. Schofield###
(164331, 164331)
 86, 4652 (2001)] to account for the anomaloustemperature dependence of in-plane magnetotransport properties of the high-Tccuprates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 86, ',', 0]

La2
###Nearly total spin polarization in La2/3Sr1/3MnO3 from tunneling experiments|M. Bowen,M. Bibes,A. Barthelemy,J. -P. Contour,A. Anane,Y. Lemaitre,A. Fert###
(164462, 164463)
Nearly total spin polarization in La2/3Sr1/3MnO3 from tunneling experiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 4, 'K', 2],[185.0, 270, 'K', 4]

Sr1
###Nearly total spin polarization in La2/3Sr1/3MnO3 from tunneling experiments|M. Bowen,M. Bibes,A. Barthelemy,J. -P. Contour,A. Anane,Y. Lemaitre,A. Fert###
(164466, 164467)
Nearly total spin polarization in La2/3Sr1/3MnO3 from tunneling experiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 4, 'K', 2],[181.0, 270, 'K', 4]

MnO3
###Nearly total spin polarization in La2/3Sr1/3MnO3 from tunneling experiments|M. Bowen,M. Bibes,A. Barthelemy,J. -P. Contour,A. Anane,Y. Lemaitre,A. Fert###
(164470, 164472)
Nearly total spin polarization in La2/3Sr1/3MnO3 from tunneling experiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 4, 'K', 2],[176.0, 270, 'K', 4]

La2
###Nearly total spin polarization in La2/3Sr1/3MnO3 from tunneling experiments|M. Bowen,M. Bibes,A. Barthelemy,J. -P. Contour,A. Anane,Y. Lemaitre,A. Fert###
(164493, 164494)
 We have performed magnetotransport measurements on La2/3Sr1/3MnO3 / SrTiO3 /La2/3Sr1/3MnO3 magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 4, 'K', 1],[154.0, 270, 'K', 3]

Sr1
###Nearly total spin polarization in La2/3Sr1/3MnO3 from tunneling experiments|M. Bowen,M. Bibes,A. Barthelemy,J. -P. Contour,A. Anane,Y. Lemaitre,A. Fert###
(164497, 164498)
 We have performed magnetotransport measurements on La2/3Sr1/3MnO3 / SrTiO3 /La2/3Sr1/3MnO3 magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 4, 'K', 1],[150.0, 270, 'K', 3]

MnO3
###Nearly total spin polarization in La2/3Sr1/3MnO3 from tunneling experiments|M. Bowen,M. Bibes,A. Barthelemy,J. -P. Contour,A. Anane,Y. Lemaitre,A. Fert###
(164501, 164503)
 We have performed magnetotransport measurements on La2/3Sr1/3MnO3 / SrTiO3 /La2/3Sr1/3MnO3 magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 4, 'K', 1],[145.0, 270, 'K', 3]

SrTiO3
###Nearly total spin polarization in La2/3Sr1/3MnO3 from tunneling experiments|M. Bowen,M. Bibes,A. Barthelemy,J. -P. Contour,A. Anane,Y. Lemaitre,A. Fert###
(164507, 164510)
 We have performed magnetotransport measurements on La2/3Sr1/3MnO3 / SrTiO3 /La2/3Sr1/3MnO3 magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 4, 'K', 1],[138.0, 270, 'K', 3]

La2
###Nearly total spin polarization in La2/3Sr1/3MnO3 from tunneling experiments|M. Bowen,M. Bibes,A. Barthelemy,J. -P. Contour,A. Anane,Y. Lemaitre,A. Fert###
(164515, 164516)
 We have performed magnetotransport measurements on La2/3Sr1/3MnO3 / SrTiO3 /La2/3Sr1/3MnO3 magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 4, 'K', 1],[132.0, 270, 'K', 3]

Sr1
###Nearly total spin polarization in La2/3Sr1/3MnO3 from tunneling experiments|M. Bowen,M. Bibes,A. Barthelemy,J. -P. Contour,A. Anane,Y. Lemaitre,A. Fert###
(164519, 164520)
 We have performed magnetotransport measurements on La2/3Sr1/3MnO3 / SrTiO3 /La2/3Sr1/3MnO3 magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 4, 'K', 1],[128.0, 270, 'K', 3]

MnO3
###Nearly total spin polarization in La2/3Sr1/3MnO3 from tunneling experiments|M. Bowen,M. Bibes,A. Barthelemy,J. -P. Contour,A. Anane,Y. Lemaitre,A. Fert###
(164523, 164525)
 We have performed magnetotransport measurements on La2/3Sr1/3MnO3 / SrTiO3 /La2/3Sr1/3MnO3 magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 4, 'K', 1],[123.0, 270, 'K', 3]

La
###Structure, Magnetic Properties and Spin-glass Behavior in La$sub{0.9}Tesub{0.1}MnOsub{3}$|Guotai Tan,P. Duan,S. Y. Dai,Y. L. Zhou,H. B. Lu,Z. H. Chen###
(164716, 164716)
Structure, Magnetic Properties and Spin-glass Behavior in Lasub0.9Tesub0.1MnOsub3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 51, '%', 3],[128.0, 200, 'K', 3],[137.0, 4, 'T', 3]

Mn
###Structure, Magnetic Properties and Spin-glass Behavior in La$sub{0.9}Tesub{0.1}MnOsub{3}$|Guotai Tan,P. Duan,S. Y. Dai,Y. L. Zhou,H. B. Lu,Z. H. Chen###
(164721, 164721)
Structure, Magnetic Properties and Spin-glass Behavior in Lasub0.9Tesub0.1MnOsub3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 51, '%', 3],[123.0, 200, 'K', 3],[132.0, 4, 'T', 3]

In
###Structure, Magnetic Properties and Spin-glass Behavior in La$sub{0.9}Tesub{0.1}MnOsub{3}$|Guotai Tan,P. Duan,S. Y. Dai,Y. L. Zhou,H. B. Lu,Z. H. Chen###
(164726, 164726)
 In this study we report the structure, magnetic and electrical transportproperties of pervoskite oxide Lasub0.9Tesub0.1MnOsub3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 51, '%', 2],[118.0, 200, 'K', 2],[127.0, 4, 'T', 2]

La
###Structure, Magnetic Properties and Spin-glass Behavior in La$sub{0.9}Tesub{0.1}MnOsub{3}$|Guotai Tan,P. Duan,S. Y. Dai,Y. L. Zhou,H. B. Lu,Z. H. Chen###
(164758, 164758)
 In this study we report the structure, magnetic and electrical transportproperties of pervoskite oxide Lasub0.9Tesub0.1MnOsub3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 51, '%', 2],[86.0, 200, 'K', 2],[95.0, 4, 'T', 2]

Mn
###Structure, Magnetic Properties and Spin-glass Behavior in La$sub{0.9}Tesub{0.1}MnOsub{3}$|Guotai Tan,P. Duan,S. Y. Dai,Y. L. Zhou,H. B. Lu,Z. H. Chen###
(164763, 164763)
 In this study we report the structure, magnetic and electrical transportproperties of pervoskite oxide Lasub0.9Tesub0.1MnOsub3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 51, '%', 2],[81.0, 200, 'K', 2],[90.0, 4, 'T', 2]

PS
###Structure, Magnetic Properties and Spin-glass Behavior in La$sub{0.9}Tesub{0.1}MnOsub{3}$|Guotai Tan,P. Duan,S. Y. Dai,Y. L. Zhou,H. B. Lu,Z. H. Chen###
(164859, 164860)
 The X<missing VAR>PSmeasurement suggests that Te ions are in the Teup4 state, while Mn ionsmay be in the 2 and 3 valence state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 51, '%', 1],[15.0, 200, 'K', 1],[6.0, 4, 'T', 1]

Te
###Structure, Magnetic Properties and Spin-glass Behavior in La$sub{0.9}Tesub{0.1}MnOsub{3}$|Guotai Tan,P. Duan,S. Y. Dai,Y. L. Zhou,H. B. Lu,Z. H. Chen###
(164869, 164869)
 The X<missing VAR>PSmeasurement suggests that Te ions are in the Teup4 state, while Mn ionsmay be in the 2 and 3 valence state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 51, '%', 1],[25.0, 200, 'K', 1],[16.0, 4, 'T', 1]

Te
###Structure, Magnetic Properties and Spin-glass Behavior in La$sub{0.9}Tesub{0.1}MnOsub{3}$|Guotai Tan,P. Duan,S. Y. Dai,Y. L. Zhou,H. B. Lu,Z. H. Chen###
(164879, 164879)
 The X<missing VAR>PSmeasurement suggests that Te ions are in the Teup4 state, while Mn ionsmay be in the 2 and 3 valence state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 51, '%', 1],[35.0, 200, 'K', 1],[26.0, 4, 'T', 1]

Mn
###Structure, Magnetic Properties and Spin-glass Behavior in La$sub{0.9}Tesub{0.1}MnOsub{3}$|Guotai Tan,P. Duan,S. Y. Dai,Y. L. Zhou,H. B. Lu,Z. H. Chen###
(164888, 164888)
 The X<missing VAR>PSmeasurement suggests that Te ions are in the Teup4 state, while Mn ionsmay be in the 2 and 3 valence state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 51, '%', 1],[44.0, 200, 'K', 1],[35.0, 4, 'T', 1]

CV
###Spin-dependent magnetoresistance and spin-charge separation in multiwall carbon nanotubes|X. Hoffer,Ch. Klinke,J. -M. Bonard,L. Gravier,J. - E. Wegrowe###
(164971, 164972)
 The spin-dependent transport in multiwall carbon nanotubes obtained bychemical vapor deposition (CVD) in porous alumina membranes is studied.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin-dependent magnetoresistance and spin-charge separation in multiwall carbon nanotubes|X. Hoffer,Ch. Klinke,J. -M. Bonard,L. Gravier,J. - E. Wegrowe###
(165080, 165080)
 In contrast, the magnetoresistance due to the spin polarized current isdestroyed in the nanotube as expected in case of spin-charge separation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Optimization of the extraordinary magnetoresistance in semiconductor-metal hybrid structures for magnetic-field sensor applications|M. Holz,O. Kronenwerth,D. Grundler###
(165440, 165440)
 In this paper, we analyze this effect by means of a model based on thefinite element method and compare our results with experimental data.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 30, '%', 2]

In
###Optimization of the extraordinary magnetoresistance in semiconductor-metal hybrid structures for magnetic-field sensor applications|M. Holz,O. Kronenwerth,D. Grundler###
(165493, 165493)
 Inparticular, we investigate the important effect of the contact resistancerhoc<missing VAR> between the semiconductor and the metal on the EMR effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 30, '%', 1]

Ca3Ru2O7
###Field-tuned Collapse of an Orbital Ordered and Spin-polarized State: Colossal Magnetoresistance in Bilayered Ruthenate|G. Cao,L. Balicas,X. N. Lin,S. Chikara,V. Duairaj,E. Elhami,J. W. Brill,R. C. Rai###
(165664, 165669)
 Ca3Ru2O7 with a Mott-like transition at 48 K features different in-planeanisotropies of magnetization and magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 48, 'K', 0]

Sr2CoMoO6
###Temperature Dependence of Resistivity of $Sr_2CoMoO_{6-δ}$ Films|C. L. Yuan,Z. Y. Zeng,Y. Zhu,P. P. Ong,Z. X. Shen,C. K. Ong###
(166112, 166117)
Temperature Dependence of Resistivity of Sr2CoMoO6- Films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr2CoMoO6
###Temperature Dependence of Resistivity of $Sr_2CoMoO_{6-δ}$ Films|C. L. Yuan,Z. Y. Zeng,Y. Zhu,P. P. Ong,Z. X. Shen,C. K. Ong###
(166150, 166155)
 We investigate the temperature dependence of the resistivity andmagnetoresistance of a polycrystalline Sr2CoMoO6-delta film deposited on(100)-SrTiO3 substrate prepared by the pulsed laser deposition method.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Temperature Dependence of Resistivity of $Sr_2CoMoO_{6-δ}$ Films|C. L. Yuan,Z. Y. Zeng,Y. Zhu,P. P. Ong,Z. X. Shen,C. K. Ong###
(166170, 166173)
 We investigate the temperature dependence of the resistivity andmagnetoresistance of a polycrystalline Sr2CoMoO6-delta film deposited on(100)-SrTiO3 substrate prepared by the pulsed laser deposition method.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Temperature Dependence of Resistivity of $Sr_2CoMoO_{6-δ}$ Films|C. L. Yuan,Z. Y. Zeng,Y. Zhu,P. P. Ong,Z. X. Shen,C. K. Ong###
(166289, 166289)
 Percolative transition between these twophases as the temperature varies, which is believed to induce a metal-insulatortransition at around T<missing VAR>C, has been directly observed in our measurements ofthe temperature dependence of the sample resistivity.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

AuFe
###Phase coherent transport in Kondo/superconducting hybrid structures|Jonghwa Eom,Yun-Sok Shin,Hu-Jong Lee,Wang-Hyun Park,Taegon Kim,Jonghan Song###
(166423, 166424)
 We present measurements of the transport properties of hybrid structuresconsisting of a Kondo AuFe film and a superconducting Al film.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 870, 'mK', 3]

Al
###Phase coherent transport in Kondo/superconducting hybrid structures|Jonghwa Eom,Yun-Sok Shin,Hu-Jong Lee,Wang-Hyun Park,Taegon Kim,Jonghan Song###
(166434, 166434)
 We present measurements of the transport properties of hybrid structuresconsisting of a Kondo AuFe film and a superconducting Al film.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 870, 'mK', 3]

AuFe
###Phase coherent transport in Kondo/superconducting hybrid structures|Jonghwa Eom,Yun-Sok Shin,Hu-Jong Lee,Wang-Hyun Park,Taegon Kim,Jonghan Song###
(166475, 166476)
 The temperaturedependence of the resistance indicates the existence of the superconductingproximity effect in the Kondo AuFe wires over the range of sim0.5 mum<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 870, 'mK', 2]

AuFe
###Phase coherent transport in Kondo/superconducting hybrid structures|Jonghwa Eom,Yun-Sok Shin,Hu-Jong Lee,Wang-Hyun Park,Taegon Kim,Jonghan Song###
(166508, 166509)
Electronic phase coherence in the Kondo AuFe wires has been confirmed byobserving the Aharanov-Bohm effect in the magnetoresistance of the loopstructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 870, 'mK', 1]

In
###Nanosized Sodium-Doped Lanthanum Manganites: Role of the Synthetic Route on their Physical Properties|Lorenzo Malavasi,Maria C. Mozzati,Stefano Polizzi,Carlo B. Azzoni,Giorgio Flor###
(166648, 166648)
 In this paper we present the results of the synthesis and characterisation ofnanocrystalline La1-xNaxMnO3delta samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 35, 'nm', 2],[105.0, 55, 'nm', 2],[210.0, 1, 'T', 4]

La1-x
###Nanosized Sodium-Doped Lanthanum Manganites: Role of the Synthetic Route on their Physical Properties|Lorenzo Malavasi,Maria C. Mozzati,Stefano Polizzi,Carlo B. Azzoni,Giorgio Flor###
(166677, 166680)
 In this paper we present the results of the synthesis and characterisation ofnanocrystalline La1-xNaxMnO3delta samples.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[57.0, 35, 'nm', 2],[73.0, 55, 'nm', 2],[178.0, 1, 'T', 4]

MnO3
###Nanosized Sodium-Doped Lanthanum Manganites: Role of the Synthetic Route on their Physical Properties|Lorenzo Malavasi,Maria C. Mozzati,Stefano Polizzi,Carlo B. Azzoni,Giorgio Flor###
(166682, 166684)
 In this paper we present the results of the synthesis and characterisation ofnanocrystalline La1-xNaxMnO3delta samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 35, 'nm', 2],[69.0, 55, 'nm', 2],[174.0, 1, 'T', 4]

In
###Possible observation of phase coexistence of the $ν=1/3$ fractional quantum Hall liquid and a solid|G. A. Csathy,D. C. Tsui,L. N. Pfeiffer,K. W. West###
(167021, 167021)
 In both of theinsulating phases in the vicinity of the nu1/3 filling themagnetoresistance has an unexpected oscillatory behavior with the magneticfield.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/GaAs/Fe
###High-field magnetoresistance of Fe/GaAs/Fe tunnel junctions|M. Zenger,J. Moser,W. Wegscheider,D. Weiss,T. Dietl###
(167185, 167190)
High-field magnetoresistance of Fe/GaAs/Fe tunnel junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[14.0, 6, 'to', 1],[15.0, 10, 'nm', 1]

U
###New class of small amplitude low-field magnetoresistance oscillation in unidirectional lateral superlattice: Geometric resonance of Bragg-reflected cyclotron orbit|Akira Endo,Yasuhiro Iye###
(167479, 167479)
 We have uncovered a new class of small amplitude magnetoresistanceoscillation in unidirectional lateral superlattice (ULSL).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 0.03, 'T', 1],[111.0, 2, ',', 2]

B
###New class of small amplitude low-field magnetoresistance oscillation in unidirectional lateral superlattice: Geometric resonance of Bragg-reflected cyclotron orbit|Akira Endo,Yasuhiro Iye###
(167508, 167508)
 The oscillation isobserved in a low-field regime, typically B < 0.03 T, as small undulation ontop of well-known positive magnetoresistance background.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 0.03, 'T', 0],[82.0, 2, ',', 1]

U
###New class of small amplitude low-field magnetoresistance oscillation in unidirectional lateral superlattice: Geometric resonance of Bragg-reflected cyclotron orbit|Akira Endo,Yasuhiro Iye###
(167612, 167612)
 Positions of maxima ofthe oscillation shift to lower field side with the increase of the electronconcentration ne roughly proportionally to ne-1/2, and also with theincrease of period a of ULSL samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 0.03, 'T', 1],[22.0, 2, ',', 0]

In
###Spin characterization and control over the regime of radiation-induced zero-resistance states|R. G. Mani###
(167823, 167823)
 In addition, beats observed in theradiation-induced oscillatory-magnetoresistance are developed into a method tomeasure and control the zero-field spin splitting due to the Bychkov-Rashba andbulk inversion asymmetry terms in the high mobility GaAs/AlGaAs system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs/AlGaAs
###Spin characterization and control over the regime of radiation-induced zero-resistance states|R. G. Mani###
(167903, 167908)
 In addition, beats observed in theradiation-induced oscillatory-magnetoresistance are developed into a method tomeasure and control the zero-field spin splitting due to the Bychkov-Rashba andbulk inversion asymmetry terms in the high mobility GaAs/AlGaAs system.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Ga
###1500-fold Tunneling Anisotropic Magnetoresistance in a (Ga,Mn)As stack|C. Rüster,C. Gould,T. Jungwirth,J. Sinova,G. M. Schott,R. Giraud,K. Brunner,G. Schmidt,L. W. Molenkamp###
(167936, 167936)
1500-fold Tunneling Anisotropic Magnetoresistance in a (Ga,Mn)As stack.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###1500-fold Tunneling Anisotropic Magnetoresistance in a (Ga,Mn)As stack|C. Rüster,C. Gould,T. Jungwirth,J. Sinova,G. M. Schott,R. Giraud,K. Brunner,G. Schmidt,L. W. Molenkamp###
(167938, 167938)
1500-fold Tunneling Anisotropic Magnetoresistance in a (Ga,Mn)As stack.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###1500-fold Tunneling Anisotropic Magnetoresistance in a (Ga,Mn)As stack|C. Rüster,C. Gould,T. Jungwirth,J. Sinova,G. M. Schott,R. Giraud,K. Brunner,G. Schmidt,L. W. Molenkamp###
(167940, 167940)
1500-fold Tunneling Anisotropic Magnetoresistance in a (Ga,Mn)As stack.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###1500-fold Tunneling Anisotropic Magnetoresistance in a (Ga,Mn)As stack|C. Rüster,C. Gould,T. Jungwirth,J. Sinova,G. M. Schott,R. Giraud,K. Brunner,G. Schmidt,L. W. Molenkamp###
(167977, 167977)
 We report the discovery of a super-giant tunneling anisotropicmagnetoresistance in an epitaxially grown (Ga,Mn)As/GaAs/(Ga,Mn)As structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###1500-fold Tunneling Anisotropic Magnetoresistance in a (Ga,Mn)As stack|C. Rüster,C. Gould,T. Jungwirth,J. Sinova,G. M. Schott,R. Giraud,K. Brunner,G. Schmidt,L. W. Molenkamp###
(167979, 167979)
 We report the discovery of a super-giant tunneling anisotropicmagnetoresistance in an epitaxially grown (Ga,Mn)As/GaAs/(Ga,Mn)As structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As/GaAs
###1500-fold Tunneling Anisotropic Magnetoresistance in a (Ga,Mn)As stack|C. Rüster,C. Gould,T. Jungwirth,J. Sinova,G. M. Schott,R. Giraud,K. Brunner,G. Schmidt,L. W. Molenkamp###
(167981, 167984)
 We report the discovery of a super-giant tunneling anisotropicmagnetoresistance in an epitaxially grown (Ga,Mn)As/GaAs/(Ga,Mn)As structure.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Ga
###1500-fold Tunneling Anisotropic Magnetoresistance in a (Ga,Mn)As stack|C. Rüster,C. Gould,T. Jungwirth,J. Sinova,G. M. Schott,R. Giraud,K. Brunner,G. Schmidt,L. W. Molenkamp###
(167987, 167987)
 We report the discovery of a super-giant tunneling anisotropicmagnetoresistance in an epitaxially grown (Ga,Mn)As/GaAs/(Ga,Mn)As structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###1500-fold Tunneling Anisotropic Magnetoresistance in a (Ga,Mn)As stack|C. Rüster,C. Gould,T. Jungwirth,J. Sinova,G. M. Schott,R. Giraud,K. Brunner,G. Schmidt,L. W. Molenkamp###
(167989, 167989)
 We report the discovery of a super-giant tunneling anisotropicmagnetoresistance in an epitaxially grown (Ga,Mn)As/GaAs/(Ga,Mn)As structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###1500-fold Tunneling Anisotropic Magnetoresistance in a (Ga,Mn)As stack|C. Rüster,C. Gould,T. Jungwirth,J. Sinova,G. M. Schott,R. Giraud,K. Brunner,G. Schmidt,L. W. Molenkamp###
(167991, 167991)
 We report the discovery of a super-giant tunneling anisotropicmagnetoresistance in an epitaxially grown (Ga,Mn)As/GaAs/(Ga,Mn)As structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Na
###Dimensional crossover and anomalous magnetoresistivity in single crystals $Na_xCoO_2$|C. H. Wang,X. H. Chen,J. L. Luo,G. T. Liu,X. X. Lu,H. T. Zhang,G. Y. Wang,X. G. Luo,N. L. Wang###
(168221, 168221)
Dimensional crossover and anomalous magnetoresistivity in single crystals Nax<missing VAR>CoO2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 0.7, ',', 1],[58.0, 0.5, 'and', 1],[144.0, 0.7, 'to', 3],[165.0, 0.5, 'sample', 4],[181.0, 2, 'K', 4],[199.0, 20, 'K', 4],[229.0, 20, 'K', 5]

CoO2
###Dimensional crossover and anomalous magnetoresistivity in single crystals $Na_xCoO_2$|C. H. Wang,X. H. Chen,J. L. Luo,G. T. Liu,X. X. Lu,H. T. Zhang,G. Y. Wang,X. G. Luo,N. L. Wang###
(168223, 168225)
Dimensional crossover and anomalous magnetoresistivity in single crystals Nax<missing VAR>CoO2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 0.7, ',', 1],[54.0, 0.5, 'and', 1],[140.0, 0.7, 'to', 3],[161.0, 0.5, 'sample', 4],[177.0, 2, 'K', 4],[195.0, 20, 'K', 4],[225.0, 20, 'K', 5]

Na
###Dimensional crossover and anomalous magnetoresistivity in single crystals $Na_xCoO_2$|C. H. Wang,X. H. Chen,J. L. Luo,G. T. Liu,X. X. Lu,H. T. Zhang,G. Y. Wang,X. G. Luo,N. L. Wang###
(168266, 168266)
 The in-plane (rhoab) and c<missing VAR>-axis (rhoc) resistivities, and themagnetoresistivity of single crystals Nax<missing VAR>CoO2 with x<missing VAR>  0.7, 0.5 and 0.3were studied systematically.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 0.7, ',', 0],[13.0, 0.5, 'and', 0],[99.0, 0.7, 'to', 2],[120.0, 0.5, 'sample', 3],[136.0, 2, 'K', 3],[154.0, 20, 'K', 3],[184.0, 20, 'K', 4]

CoO2
###Dimensional crossover and anomalous magnetoresistivity in single crystals $Na_xCoO_2$|C. H. Wang,X. H. Chen,J. L. Luo,G. T. Liu,X. X. Lu,H. T. Zhang,G. Y. Wang,X. G. Luo,N. L. Wang###
(168268, 168270)
 The in-plane (rhoab) and c<missing VAR>-axis (rhoc) resistivities, and themagnetoresistivity of single crystals Nax<missing VAR>CoO2 with x<missing VAR>  0.7, 0.5 and 0.3were studied systematically.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 0.7, ',', 0],[9.0, 0.5, 'and', 0],[95.0, 0.7, 'to', 2],[116.0, 0.5, 'sample', 3],[132.0, 2, 'K', 3],[150.0, 20, 'K', 3],[180.0, 20, 'K', 4]

Na0.3CoO2
###Dimensional crossover and anomalous magnetoresistivity in single crystals $Na_xCoO_2$|C. H. Wang,X. H. Chen,J. L. Luo,G. T. Liu,X. X. Lu,H. T. Zhang,G. Y. Wang,X. G. Luo,N. L. Wang###
(168308, 168312)
 rhoab(T) shows similar temperaturedependence between Na0.3CoO2 and Na0.7CoO2, while rhoc(T) isquite different.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6060606060606061,0,0,0.09090909090909091,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.30303030303030304,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 0.7, ',', 1],[29.0, 0.5, 'and', 1],[53.0, 0.7, 'to', 1],[74.0, 0.5, 'sample', 2],[90.0, 2, 'K', 2],[108.0, 20, 'K', 2],[138.0, 20, 'K', 3]

Na0.7CoO2
###Dimensional crossover and anomalous magnetoresistivity in single crystals $Na_xCoO_2$|C. H. Wang,X. H. Chen,J. L. Luo,G. T. Liu,X. X. Lu,H. T. Zhang,G. Y. Wang,X. G. Luo,N. L. Wang###
(168316, 168320)
 rhoab(T) shows similar temperaturedependence between Na0.3CoO2 and Na0.7CoO2, while rhoc(T) isquite different.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5405405405405405,0,0,0.18918918918918917,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.27027027027027023,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 0.7, ',', 1],[37.0, 0.5, 'and', 1],[45.0, 0.7, 'to', 1],[66.0, 0.5, 'sample', 2],[82.0, 2, 'K', 2],[100.0, 20, 'K', 2],[130.0, 20, 'K', 3]

Na
###Dimensional crossover and anomalous magnetoresistivity in single crystals $Na_xCoO_2$|C. H. Wang,X. H. Chen,J. L. Luo,G. T. Liu,X. X. Lu,H. T. Zhang,G. Y. Wang,X. G. Luo,N. L. Wang###
(168360, 168360)
 A dimensional crossover from two to three occurs withdecreasing Na concentration from 0.7 to 0.3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 0.7, ',', 2],[81.0, 0.5, 'and', 2],[5.0, 0.7, 'to', 0],[26.0, 0.5, 'sample', 1],[42.0, 2, 'K', 1],[60.0, 20, 'K', 1],[90.0, 20, 'K', 2]

Si/SiGe
###Low field magnetotransport in strained Si/SiGe cavities|G. Scappucci,L. Di Gaspare,F. Evangelisti,E. Giovine,A. Notargiacomo,R. Leoni,V. Piazza,P. Pingue,F. Beltram###
(168491, 168494)
Low field magnetotransport in strained Si/SiGe cavities.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[68.0, 2, 'DEG', 2]

Si/SiGe
###Low field magnetotransport in strained Si/SiGe cavities|G. Scappucci,L. Di Gaspare,F. Evangelisti,E. Giovine,A. Notargiacomo,R. Leoni,V. Piazza,P. Pingue,F. Beltram###
(168522, 168525)
 Low field magnetotransport revealing signatures of ballistic transporteffects in strained Si/SiGe cavities is investigated.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[37.0, 2, 'DEG', 1]

Si/SiGe
###Low field magnetotransport in strained Si/SiGe cavities|G. Scappucci,L. Di Gaspare,F. Evangelisti,E. Giovine,A. Notargiacomo,R. Leoni,V. Piazza,P. Pingue,F. Beltram###
(168541, 168544)
 We fabricated strainedSi/SiGe cavities by confining a high mobility Si/SiGe 2DEG in a bended nanowiregeometry defined by electron-beam lithography and reactive ion etching.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[18.0, 2, 'DEG', 0]

Si/SiGe
###Low field magnetotransport in strained Si/SiGe cavities|G. Scappucci,L. Di Gaspare,F. Evangelisti,E. Giovine,A. Notargiacomo,R. Leoni,V. Piazza,P. Pingue,F. Beltram###
(168558, 168561)
 We fabricated strainedSi/SiGe cavities by confining a high mobility Si/SiGe 2DEG in a bended nanowiregeometry defined by electron-beam lithography and reactive ion etching.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[1.0, 2, 'DEG', 0]

Gd7Rh3
###Large magnetoresistance in the magnetically ordered state as well as in the paramagnetic state near 300 K in an intermetallic compound,Gd7Rh3|Kausik Sengupta,S. Rayaprol,E. V. Sampathkumaran###
(168778, 168781)
Large magnetoresistance in the magnetically ordered state as well as in the paramagnetic state near 300 K in an intermetallic compound,Gd7Rh3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 300, 'K', 0],[39.0, 140, 'kOe', 1],[74.0, 150, 'K', 1],[206.0, 77, 'K', 3]

(H)
###Large magnetoresistance in the magnetically ordered state as well as in the paramagnetic state near 300 K in an intermetallic compound,Gd7Rh3|Kausik Sengupta,S. Rayaprol,E. V. Sampathkumaran###
(168813, 168815)
 We report the response of electrical resistivity rho to the application ofmagnetic fields (H) up to 140 kOe in the temperature interval 1.8-300 K for thecompound, Gd7Rh3, ordering antiferromagnetically below 150 K.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 300, 'K', 1],[5.0, 140, 'kOe', 0],[40.0, 150, 'K', 0],[172.0, 77, 'K', 2]

K
###Large magnetoresistance in the magnetically ordered state as well as in the paramagnetic state near 300 K in an intermetallic compound,Gd7Rh3|Kausik Sengupta,S. Rayaprol,E. V. Sampathkumaran###
(168834, 168834)
 We report the response of electrical resistivity rho to the application ofmagnetic fields (H) up to 140 kOe in the temperature interval 1.8-300 K for thecompound, Gd7Rh3, ordering antiferromagnetically below 150 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 300, 'K', 1],[14.0, 140, 'kOe', 0],[21.0, 150, 'K', 0],[153.0, 77, 'K', 2]

Gd7Rh3
###Large magnetoresistance in the magnetically ordered state as well as in the paramagnetic state near 300 K in an intermetallic compound,Gd7Rh3|Kausik Sengupta,S. Rayaprol,E. V. Sampathkumaran###
(168844, 168847)
 We report the response of electrical resistivity rho to the application ofmagnetic fields (H) up to 140 kOe in the temperature interval 1.8-300 K for thecompound, Gd7Rh3, ordering antiferromagnetically below 150 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 300, 'K', 1],[24.0, 140, 'kOe', 0],[8.0, 150, 'K', 0],[140.0, 77, 'K', 2]

H
###Large magnetoresistance in the magnetically ordered state as well as in the paramagnetic state near 300 K in an intermetallic compound,Gd7Rh3|Kausik Sengupta,S. Rayaprol,E. V. Sampathkumaran###
(168889, 168889)
 We find thatthere is an unusually large decrease of rho for moderate values of H in theclose vicinity of room temperature uncharacteristic of paramagnets, with themagnitude of the magnetoresistance increasing with decreasing temperature asthough the spin-order contribution to rho is temperature dependent.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 300, 'K', 2],[69.0, 140, 'kOe', 1],[34.0, 150, 'K', 1],[98.0, 77, 'K', 1]

In
###Large magnetoresistance in the magnetically ordered state as well as in the paramagnetic state near 300 K in an intermetallic compound,Gd7Rh3|Kausik Sengupta,S. Rayaprol,E. V. Sampathkumaran###
(168958, 168958)
 Inaddition, this compound exhibits giant magnetoresistance behaviour at ratherhigh temperatures (above 77 K) in the magnetically ordered state due to ametamagnetic transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[190.0, 300, 'K', 3],[138.0, 140, 'kOe', 2],[103.0, 150, 'K', 2],[29.0, 77, 'K', 0]

Ga
###Quantitative Study of Magnetotransport through a (Ga,Mn)As Single Ferromagnetic Domain|S. T. B. Goennenwein,S. Russo,A. F. Morpurgo,T. M. Klapwijk,W. van Roy,J. de Boeck###
(169033, 169033)
Quantitative Study of Magnetotransport through a (Ga,Mn)As Single Ferromagnetic Domain.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Quantitative Study of Magnetotransport through a (Ga,Mn)As Single Ferromagnetic Domain|S. T. B. Goennenwein,S. Russo,A. F. Morpurgo,T. M. Klapwijk,W. van Roy,J. de Boeck###
(169035, 169035)
Quantitative Study of Magnetotransport through a (Ga,Mn)As Single Ferromagnetic Domain.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Quantitative Study of Magnetotransport through a (Ga,Mn)As Single Ferromagnetic Domain|S. T. B. Goennenwein,S. Russo,A. F. Morpurgo,T. M. Klapwijk,W. van Roy,J. de Boeck###
(169037, 169037)
Quantitative Study of Magnetotransport through a (Ga,Mn)As Single Ferromagnetic Domain.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###Quantitative Study of Magnetotransport through a (Ga,Mn)As Single Ferromagnetic Domain|S. T. B. Goennenwein,S. Russo,A. F. Morpurgo,T. M. Klapwijk,W. van Roy,J. de Boeck###
(169084, 169084)
 We have performed a systematic investigation of the longitudinal andtransverse magnetoresistance of a single ferromagnetic domain in (Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Quantitative Study of Magnetotransport through a (Ga,Mn)As Single Ferromagnetic Domain|S. T. B. Goennenwein,S. Russo,A. F. Morpurgo,T. M. Klapwijk,W. van Roy,J. de Boeck###
(169086, 169086)
 We have performed a systematic investigation of the longitudinal andtransverse magnetoresistance of a single ferromagnetic domain in (Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Quantitative Study of Magnetotransport through a (Ga,Mn)As Single Ferromagnetic Domain|S. T. B. Goennenwein,S. Russo,A. F. Morpurgo,T. M. Klapwijk,W. van Roy,J. de Boeck###
(169088, 169088)
 We have performed a systematic investigation of the longitudinal andtransverse magnetoresistance of a single ferromagnetic domain in (Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###Quantitative Study of Magnetotransport through a (Ga,Mn)As Single Ferromagnetic Domain|S. T. B. Goennenwein,S. Russo,A. F. Morpurgo,T. M. Klapwijk,W. van Roy,J. de Boeck###
(169231, 169231)
 Our analysisfurthermore indicates the relevance of magneto-impurity scattering as amechanism for magnetoresistance in (Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Quantitative Study of Magnetotransport through a (Ga,Mn)As Single Ferromagnetic Domain|S. T. B. Goennenwein,S. Russo,A. F. Morpurgo,T. M. Klapwijk,W. van Roy,J. de Boeck###
(169233, 169233)
 Our analysisfurthermore indicates the relevance of magneto-impurity scattering as amechanism for magnetoresistance in (Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Quantitative Study of Magnetotransport through a (Ga,Mn)As Single Ferromagnetic Domain|S. T. B. Goennenwein,S. Russo,A. F. Morpurgo,T. M. Klapwijk,W. van Roy,J. de Boeck###
(169235, 169235)
 Our analysisfurthermore indicates the relevance of magneto-impurity scattering as amechanism for magnetoresistance in (Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.7
###Large magnetoresistance in low temperature metallic region of manganite compounds (La0.7-2xEux)(Ca0.3Srx)MnO3 (0.05<x<0.15)|D. S. Rana,C. M. Thaker,K. R. Mavani,D. G. Kuberkar,S. K. Malik###
(169267, 169268)
Large magnetoresistance in low temperature metallic region of manganite compounds (La0.7-2x<missing VAR>Eux)(Ca0.3Srx)MnO3 (0.05<x<missing VAR><0.15).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 0.05, '<', 0],[83.0, 0.05, '<', 2],[101.0, 5, 'K', 2],[108.0, 5, 'K', 3],[124.0, 98, '%', 3]

Ca0.3
###Large magnetoresistance in low temperature metallic region of manganite compounds (La0.7-2xEux)(Ca0.3Srx)MnO3 (0.05<x<0.15)|D. S. Rana,C. M. Thaker,K. R. Mavani,D. G. Kuberkar,S. K. Malik###
(169275, 169276)
Large magnetoresistance in low temperature metallic region of manganite compounds (La0.7-2x<missing VAR>Eux)(Ca0.3Srx)MnO3 (0.05<x<missing VAR><0.15).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 0.05, '<', 0],[75.0, 0.05, '<', 2],[93.0, 5, 'K', 2],[100.0, 5, 'K', 3],[116.0, 98, '%', 3]

MnO3
###Large magnetoresistance in low temperature metallic region of manganite compounds (La0.7-2xEux)(Ca0.3Srx)MnO3 (0.05<x<0.15)|D. S. Rana,C. M. Thaker,K. R. Mavani,D. G. Kuberkar,S. K. Malik###
(169279, 169281)
Large magnetoresistance in low temperature metallic region of manganite compounds (La0.7-2x<missing VAR>Eux)(Ca0.3Srx)MnO3 (0.05<x<missing VAR><0.15).
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 0.05, '<', 0],[70.0, 0.05, '<', 2],[88.0, 5, 'K', 2],[95.0, 5, 'K', 3],[111.0, 98, '%', 3]

La0.7
###Large magnetoresistance in low temperature metallic region of manganite compounds (La0.7-2xEux)(Ca0.3Srx)MnO3 (0.05<x<0.15)|D. S. Rana,C. M. Thaker,K. R. Mavani,D. G. Kuberkar,S. K. Malik###
(169334, 169335)
c) measurements have beencarried out on the manganites, (La0.7-2x<missing VAR>Eux)(Ca0.3Srx)MnO3 (0.05<x<missing VAR><0.15), inthe temperature range of 5K-320K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 0.05, '<', 2],[16.0, 0.05, '<', 0],[34.0, 5, 'K', 0],[41.0, 5, 'K', 1],[57.0, 98, '%', 1]

Ca0.3
###Large magnetoresistance in low temperature metallic region of manganite compounds (La0.7-2xEux)(Ca0.3Srx)MnO3 (0.05<x<0.15)|D. S. Rana,C. M. Thaker,K. R. Mavani,D. G. Kuberkar,S. K. Malik###
(169342, 169343)
c) measurements have beencarried out on the manganites, (La0.7-2x<missing VAR>Eux)(Ca0.3Srx)MnO3 (0.05<x<missing VAR><0.15), inthe temperature range of 5K-320K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 0.05, '<', 2],[8.0, 0.05, '<', 0],[26.0, 5, 'K', 0],[33.0, 5, 'K', 1],[49.0, 98, '%', 1]

MnO3
###Large magnetoresistance in low temperature metallic region of manganite compounds (La0.7-2xEux)(Ca0.3Srx)MnO3 (0.05<x<0.15)|D. S. Rana,C. M. Thaker,K. R. Mavani,D. G. Kuberkar,S. K. Malik###
(169346, 169348)
c) measurements have beencarried out on the manganites, (La0.7-2x<missing VAR>Eux)(Ca0.3Srx)MnO3 (0.05<x<missing VAR><0.15), inthe temperature range of 5K-320K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 0.05, '<', 2],[3.0, 0.05, '<', 0],[21.0, 5, 'K', 0],[28.0, 5, 'K', 1],[44.0, 98, '%', 1]

K
###Large magnetoresistance in low temperature metallic region of manganite compounds (La0.7-2xEux)(Ca0.3Srx)MnO3 (0.05<x<0.15)|D. S. Rana,C. M. Thaker,K. R. Mavani,D. G. Kuberkar,S. K. Malik###
(169372, 169372)
c) measurements have beencarried out on the manganites, (La0.7-2x<missing VAR>Eux)(Ca0.3Srx)MnO3 (0.05<x<missing VAR><0.15), inthe temperature range of 5K-320K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 0.05, '<', 2],[21.0, 0.05, '<', 0],[3.0, 5, 'K', 0],[4.0, 5, 'K', 1],[20.0, 98, '%', 1]

At
###Large magnetoresistance in low temperature metallic region of manganite compounds (La0.7-2xEux)(Ca0.3Srx)MnO3 (0.05<x<0.15)|D. S. Rana,C. M. Thaker,K. R. Mavani,D. G. Kuberkar,S. K. Malik###
(169375, 169375)
 At 5K, an unusually large MR of almost 98% isobserved in the x<missing VAR>0.15 sample, nearly up to fields of 4-5 Tesla.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 0.05, '<', 3],[24.0, 0.05, '<', 1],[6.0, 5, 'K', 1],[1.0, 5, 'K', 0],[17.0, 98, '%', 0]

In
###Huge Ballistic Magnetoresistance in Multiple Nanocontacts Devices|N. Garcia,M. R. Ibarra,C. Hao1,R. F. Pacheco,D. Serrate###
(169564, 169564)
 In this paper we report an exhaustive experimental work on magnetoresistanceeffects found in a system in which a large number of nanocontacts are producedbetween oxidized Fe fine particles.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 1000, '%', 1],[158.0, 5, 'K', 3],[176.0, 100, '%', 4]

Fe
###Huge Ballistic Magnetoresistance in Multiple Nanocontacts Devices|N. Garcia,M. R. Ibarra,C. Hao1,R. F. Pacheco,D. Serrate###
(169620, 169620)
 In this paper we report an exhaustive experimental work on magnetoresistanceeffects found in a system in which a large number of nanocontacts are producedbetween oxidized Fe fine particles.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 1000, '%', 1],[102.0, 5, 'K', 3],[120.0, 100, '%', 4]

I
###Huge Ballistic Magnetoresistance in Multiple Nanocontacts Devices|N. Garcia,M. R. Ibarra,C. Hao1,R. F. Pacheco,D. Serrate###
(169671, 169671)
 ii) Non-linear I-V at different applied fields and temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 1000, '%', 1],[51.0, 5, 'K', 1],[69.0, 100, '%', 2]

V
###Huge Ballistic Magnetoresistance in Multiple Nanocontacts Devices|N. Garcia,M. R. Ibarra,C. Hao1,R. F. Pacheco,D. Serrate###
(169673, 169673)
 ii) Non-linear I-V at different applied fields and temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 1000, '%', 1],[49.0, 5, 'K', 1],[67.0, 100, '%', 2]

F
###Interference Effects Due to Commensurate Electron Trajectories and Topological Crossovers in (TMTSF)2ClO4|H. I. Ha,A. G. Lebed,M. J. Naughton###
(169844, 169844)
Interference Effects Due to Commensurate Electron Trajectories and Topological Crossovers in (TMTSF)2ClO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ClO4
###Interference Effects Due to Commensurate Electron Trajectories and Topological Crossovers in (TMTSF)2ClO4|H. I. Ha,A. G. Lebed,M. J. Naughton###
(169847, 169849)
Interference Effects Due to Commensurate Electron Trajectories and Topological Crossovers in (TMTSF)2ClO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Interference Effects Due to Commensurate Electron Trajectories and Topological Crossovers in (TMTSF)2ClO4|H. I. Ha,A. G. Lebed,M. J. Naughton###
(169871, 169871)
 We report angle-dependent magnetoresistance measurements on (TMTSF)2ClO4 thatprovide strong support for a new macroscopic quantum phenomenon, theinterference commensurate (IC) effect, in quasi-one dimensional metals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ClO4
###Interference Effects Due to Commensurate Electron Trajectories and Topological Crossovers in (TMTSF)2ClO4|H. I. Ha,A. G. Lebed,M. J. Naughton###
(169874, 169876)
 We report angle-dependent magnetoresistance measurements on (TMTSF)2ClO4 thatprovide strong support for a new macroscopic quantum phenomenon, theinterference commensurate (IC) effect, in quasi-one dimensional metals.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(IC)
###Interference Effects Due to Commensurate Electron Trajectories and Topological Crossovers in (TMTSF)2ClO4|H. I. Ha,A. G. Lebed,M. J. Naughton###
(169907, 169910)
 We report angle-dependent magnetoresistance measurements on (TMTSF)2ClO4 thatprovide strong support for a new macroscopic quantum phenomenon, theinterference commensurate (IC) effect, in quasi-one dimensional metals.
Featurization successful!
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Interference Effects Due to Commensurate Electron Trajectories and Topological Crossovers in (TMTSF)2ClO4|H. I. Ha,A. G. Lebed,M. J. Naughton###
(169926, 169926)
 Inaddition to observing rich magnetoresistance oscillations, and fitting themwith one-electron calculations, we observe a clear demarcation offield-dependent behavior at local resistance minima and maxima (versus fieldangle).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

IC
###Interference Effects Due to Commensurate Electron Trajectories and Topological Crossovers in (TMTSF)2ClO4|H. I. Ha,A. G. Lebed,M. J. Naughton###
(170013, 170014)
 Anticipated by a theoretical treatment of the IC effect in terms ofBragg reflections in the extended Brillouin zone, this behavior results from1D<missing VAR>-2D<missing VAR> topological crossovers of electron wave functions as a function of fieldorientation.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co2TiSn
###Unusual transport properties of ferromagnetic Heusler alloy Co$_2$TiSn|S. Majumdar,M. K. Chattopadhyay,V. K. Sharma,K. J. S. Sokhey,S. B. Roy,P. Chaddah###
(170570, 170573)
Unusual transport properties of ferromagnetic Heusler alloy Co2TiSn.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co2TiSn
###Unusual transport properties of ferromagnetic Heusler alloy Co$_2$TiSn|S. Majumdar,M. K. Chattopadhyay,V. K. Sharma,K. J. S. Sokhey,S. B. Roy,P. Chaddah###
(170608, 170611)
 We report results of magnetization, zero field resistivity andmagnetoresistance measurements in ferromagnetic Heusler alloy Co2TiSn.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Unusual transport properties of ferromagnetic Heusler alloy Co$_2$TiSn|S. Majumdar,M. K. Chattopadhyay,V. K. Sharma,K. J. S. Sokhey,S. B. Roy,P. Chaddah###
(170657, 170657)
 In the paramagneticstate the nature of the electron transport is like that of a semiconductor andthis changes abruptly to metallic behaviour at the onset of ferromagneticordering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

UNiSn
###Unusual transport properties of ferromagnetic Heusler alloy Co$_2$TiSn|S. Majumdar,M. K. Chattopadhyay,V. K. Sharma,K. J. S. Sokhey,S. B. Roy,P. Chaddah###
(170803, 170805)
 Comparison is made withthe similar unusual behaviour observed in other systems including UNiSn andmanganites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiMnSb
###Tunneling magnetoresistance in devices based on epitaxial NiMnSb with uniaxial anisotropy|J. Liu,E. Girgis,P. Bach,C. Ruester,C. Gould,G. Schmidt,L. W. Molenkamp###
(171050, 171052)
Tunneling magnetoresistance in devices based on epitaxial NiMnSb with uniaxial anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 8.7, '%', 2],[104.0, 14.7, '%', 2],[108.0, 4.2, 'K', 2]

NiMnSb
###Tunneling magnetoresistance in devices based on epitaxial NiMnSb with uniaxial anisotropy|J. Liu,E. Girgis,P. Bach,C. Ruester,C. Gould,G. Schmidt,L. W. Molenkamp###
(171098, 171100)
 We demonstrate tunnel magnetoresistance (TMR) junctions based on a tri layersystem consisting of an epitaxial NiMnSb, aluminum oxide and CoFe tri layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 8.7, '%', 1],[56.0, 14.7, '%', 1],[60.0, 4.2, 'K', 1]

CoFe
###Tunneling magnetoresistance in devices based on epitaxial NiMnSb with uniaxial anisotropy|J. Liu,E. Girgis,P. Bach,C. Ruester,C. Gould,G. Schmidt,L. W. Molenkamp###
(171109, 171110)
 We demonstrate tunnel magnetoresistance (TMR) junctions based on a tri layersystem consisting of an epitaxial NiMnSb, aluminum oxide and CoFe tri layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 8.7, '%', 1],[46.0, 14.7, '%', 1],[50.0, 4.2, 'K', 1]

NiMnSb
###Tunneling magnetoresistance in devices based on epitaxial NiMnSb with uniaxial anisotropy|J. Liu,E. Girgis,P. Bach,C. Ruester,C. Gould,G. Schmidt,L. W. Molenkamp###
(171202, 171204)
 A uniaxial in plane anisotropy inthe NiMnSb layer leads to different switching characteristics depending on thedirection in which the magnetic field is applied, an effect which can be usedfor sensor applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 8.7, '%', 2],[46.0, 14.7, '%', 2],[42.0, 4.2, 'K', 2]

P
###Origin of positive magnetoresistance in small-amplitude unidirectional lateral superlattices|Akira Endo,Yasuhiro Iye###
(171306, 171306)
 We report quantitative analysis of positive magnetoresistance (PMR) forunidirectional-lateral-superlattice samples with relatively small periods(a92-184 nm) and modulation amplitudes (V00.015-0.25 meV).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V00.015
###Origin of positive magnetoresistance in small-amplitude unidirectional lateral superlattices|Akira Endo,Yasuhiro Iye###
(171347, 171349)
 We report quantitative analysis of positive magnetoresistance (PMR) forunidirectional-lateral-superlattice samples with relatively small periods(a92-184 nm) and modulation amplitudes (V00.015-0.25 meV).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Origin of positive magnetoresistance in small-amplitude unidirectional lateral superlattices|Akira Endo,Yasuhiro Iye###
(171354, 171354)
 We report quantitative analysis of positive magnetoresistance (PMR) forunidirectional-lateral-superlattice samples with relatively small periods(a92-184 nm) and modulation amplitudes (V00.015-0.25 meV).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Origin of positive magnetoresistance in small-amplitude unidirectional lateral superlattices|Akira Endo,Yasuhiro Iye###
(171365, 171365)
 By comparingobserved PMRs with ones calculated using experimentally obtained mobilities,quantum mobilities, and V0s<missing VAR>, it is shown that contribution from streamingorbits (SO) accounts for only small fraction of the total PMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V0
###Origin of positive magnetoresistance in small-amplitude unidirectional lateral superlattices|Akira Endo,Yasuhiro Iye###
(171393, 171394)
 By comparingobserved PMRs with ones calculated using experimentally obtained mobilities,quantum mobilities, and V0s<missing VAR>, it is shown that contribution from streamingorbits (SO) accounts for only small fraction of the total PMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(SO)
###Origin of positive magnetoresistance in small-amplitude unidirectional lateral superlattices|Akira Endo,Yasuhiro Iye###
(171415, 171418)
 By comparingobserved PMRs with ones calculated using experimentally obtained mobilities,quantum mobilities, and V0s<missing VAR>, it is shown that contribution from streamingorbits (SO) accounts for only small fraction of the total PMR.
Featurization successful!
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Origin of positive magnetoresistance in small-amplitude unidirectional lateral superlattices|Akira Endo,Yasuhiro Iye###
(171436, 171436)
 By comparingobserved PMRs with ones calculated using experimentally obtained mobilities,quantum mobilities, and V0s<missing VAR>, it is shown that contribution from streamingorbits (SO) accounts for only small fraction of the total PMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V0
###Origin of positive magnetoresistance in small-amplitude unidirectional lateral superlattices|Akira Endo,Yasuhiro Iye###
(171445, 171446)
 For small V0,the limiting magnetic field Be<missing VAR> of SO can be identified as an inflection pointof the magnetoresistance trace.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Origin of positive magnetoresistance in small-amplitude unidirectional lateral superlattices|Akira Endo,Yasuhiro Iye###
(171458, 171458)
 For small V0,the limiting magnetic field Be<missing VAR> of SO can be identified as an inflection pointof the magnetoresistance trace.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Origin of positive magnetoresistance in small-amplitude unidirectional lateral superlattices|Akira Endo,Yasuhiro Iye###
(171463, 171464)
 For small V0,the limiting magnetic field Be<missing VAR> of SO can be identified as an inflection pointof the magnetoresistance trace.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Origin of positive magnetoresistance in small-amplitude unidirectional lateral superlattices|Akira Endo,Yasuhiro Iye###
(171498, 171498)
 The major part of PMR is ascribed to driftvelocity arising from incompleted cyclotron orbits obstructed by scatterings.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiMnSb/InSb
###Negative Giant Longitudinal Magnetoresistance in NiMnSb/InSb: An interface effect|S. Gardelis,J. Androulakis,Z. Viskadourakis,E. L. Papadopoulou,J. Giapintzakis###
(171548, 171553)
Negative Giant Longitudinal Magnetoresistance in NiMnSb/InSb An interface effect.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

NiMnSb
###Negative Giant Longitudinal Magnetoresistance in NiMnSb/InSb: An interface effect|S. Gardelis,J. Androulakis,Z. Viskadourakis,E. L. Papadopoulou,J. Giapintzakis###
(171593, 171595)
 We report on the electrical and magneto-transport properties of the contactformed between polycrystalline NiMnSb thin films grown using pulsed laserdeposition (PLD) and n<missing VAR>-type degenerate InSb (100) substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Negative Giant Longitudinal Magnetoresistance in NiMnSb/InSb: An interface effect|S. Gardelis,J. Androulakis,Z. Viskadourakis,E. L. Papadopoulou,J. Giapintzakis###
(171613, 171613)
 We report on the electrical and magneto-transport properties of the contactformed between polycrystalline NiMnSb thin films grown using pulsed laserdeposition (PLD) and n<missing VAR>-type degenerate InSb (100) substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

InSb
###Negative Giant Longitudinal Magnetoresistance in NiMnSb/InSb: An interface effect|S. Gardelis,J. Androulakis,Z. Viskadourakis,E. L. Papadopoulou,J. Giapintzakis###
(171626, 171627)
 We report on the electrical and magneto-transport properties of the contactformed between polycrystalline NiMnSb thin films grown using pulsed laserdeposition (PLD) and n<missing VAR>-type degenerate InSb (100) substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs/Al
###Radiation-induced oscillatory-magnetoresistance in a tilted magnetic field in $GaAs/Al_{x}Ga_{1-x}As$ devices|R. G. Mani###
(172012, 172015)
Radiation-induced oscillatory-magnetoresistance in a tilted magnetic field in GaAs/Alx<missing VAR>Ga1-xAs devices.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[61.0, 2, 'D', 2],[139.0, 2, 'DES', 2],[204.0, 0, ',', 3]

Ga1-xAs
###Radiation-induced oscillatory-magnetoresistance in a tilted magnetic field in $GaAs/Al_{x}Ga_{1-x}As$ devices|R. G. Mani###
(172017, 172021)
Radiation-induced oscillatory-magnetoresistance in a tilted magnetic field in GaAs/Alx<missing VAR>Ga1-xAs devices.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[55.0, 2, 'D', 2],[133.0, 2, 'DES', 2],[198.0, 0, ',', 3]

In
###Radiation-induced oscillatory-magnetoresistance in a tilted magnetic field in $GaAs/Al_{x}Ga_{1-x}As$ devices|R. G. Mani###
(172068, 172068)
 Inanalogy to the 2D Shubnikov-de Haas effect, the characteristic field, Bf<missing VAR>,and the period of the radiation-induced magnetoresistance oscillations appearsdependent upon the component of the applied magnetic field that isperpendicular to the plane of the 2DES.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 2, 'D', 0],[86.0, 2, 'DES', 0],[151.0, 0, ',', 1]

B
###Radiation-induced oscillatory-magnetoresistance in a tilted magnetic field in $GaAs/Al_{x}Ga_{1-x}As$ devices|R. G. Mani###
(172094, 172094)
 Inanalogy to the 2D Shubnikov-de Haas effect, the characteristic field, Bf<missing VAR>,and the period of the radiation-induced magnetoresistance oscillations appearsdependent upon the component of the applied magnetic field that isperpendicular to the plane of the 2DES.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 2, 'D', 0],[60.0, 2, 'DES', 0],[125.0, 0, ',', 1]

In
###Radiation-induced oscillatory-magnetoresistance in a tilted magnetic field in $GaAs/Al_{x}Ga_{1-x}As$ devices|R. G. Mani###
(172157, 172157)
 In addition, we find that a parallelcomponent, B//, in the range of 0.6 < B// < 1.2 Tesla, at a tiltangle of theta  800, leaves the oscillatory pattern essentiallyunchanged.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 2, 'D', 1],[3.0, 2, 'DES', 1],[62.0, 0, ',', 0]

B
###Radiation-induced oscillatory-magnetoresistance in a tilted magnetic field in $GaAs/Al_{x}Ga_{1-x}As$ devices|R. G. Mani###
(172176, 172176)
 In addition, we find that a parallelcomponent, B//, in the range of 0.6 < B// < 1.2 Tesla, at a tiltangle of theta  800, leaves the oscillatory pattern essentiallyunchanged.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 2, 'D', 1],[22.0, 2, 'DES', 1],[43.0, 0, ',', 0]

B
###Radiation-induced oscillatory-magnetoresistance in a tilted magnetic field in $GaAs/Al_{x}Ga_{1-x}As$ devices|R. G. Mani###
(172193, 172193)
 In addition, we find that a parallelcomponent, B//, in the range of 0.6 < B// < 1.2 Tesla, at a tiltangle of theta  800, leaves the oscillatory pattern essentiallyunchanged.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 2, 'D', 1],[39.0, 2, 'DES', 1],[26.0, 0, ',', 0]

RuSr2Eu1.5Ce0.5Cu2O10
###Magnetism, Upper critical field and Thermoelectric power of Magneto-Superconductor RuSr2Eu1.5Ce0.5Cu2O10|R. Lal,V. P. S. Awana,H. Kishan,Rajeev Rawat,V. Ganesan,A. V. Narlikar,M. Peurla,R. Laiho###
(172473, 172483)
Magnetism, Upper critical field and Thermoelectric power of Magneto-Superconductor RuSr2Eu1.5Ce0.5Cu2O10.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5882352941176471,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.11764705882352941,0,0,0,0,0,0,0,0,0.11764705882352941,0,0,0,0,0,0.058823529411764705,0,0,0,0,0,0,0,0,0,0,0,0,0,0.029411764705882353,0,0,0,0,0.08823529411764706,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 2, ',', 2],[132.0, 140, 'K', 3],[137.0, 25, 'K', 3],[165.0, 32, 'T', 3],[170.0, 8, 'meV', 3]

H
###Magnetism, Upper critical field and Thermoelectric power of Magneto-Superconductor RuSr2Eu1.5Ce0.5Cu2O10|R. Lal,V. P. S. Awana,H. Kishan,Rajeev Rawat,V. Ganesan,A. V. Narlikar,M. Peurla,R. Laiho###
(172493, 172493)
 Magnetic susceptibility, M<missing VAR>-H plot, magnetoresistance and thermoelectric powerof the RuSr2Eu1.5Ce0.5Cu2O10 superconductor are measured.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 2, ',', 1],[122.0, 140, 'K', 2],[127.0, 25, 'K', 2],[155.0, 32, 'T', 2],[160.0, 8, 'meV', 2]

RuSr2Eu1.5Ce0.5Cu2O10
###Magnetism, Upper critical field and Thermoelectric power of Magneto-Superconductor RuSr2Eu1.5Ce0.5Cu2O10|R. Lal,V. P. S. Awana,H. Kishan,Rajeev Rawat,V. Ganesan,A. V. Narlikar,M. Peurla,R. Laiho###
(172511, 172521)
 Magnetic susceptibility, M<missing VAR>-H plot, magnetoresistance and thermoelectric powerof the RuSr2Eu1.5Ce0.5Cu2O10 superconductor are measured.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5882352941176471,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.11764705882352941,0,0,0,0,0,0,0,0,0.11764705882352941,0,0,0,0,0,0.058823529411764705,0,0,0,0,0,0,0,0,0,0,0,0,0,0.029411764705882353,0,0,0,0,0.08823529411764706,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 2, ',', 1],[94.0, 140, 'K', 2],[99.0, 25, 'K', 2],[127.0, 32, 'T', 2],[132.0, 8, 'meV', 2]

Tc
###Magnetism, Upper critical field and Thermoelectric power of Magneto-Superconductor RuSr2Eu1.5Ce0.5Cu2O10|R. Lal,V. P. S. Awana,H. Kishan,Rajeev Rawat,V. Ganesan,A. V. Narlikar,M. Peurla,R. Laiho###
(172553, 172553)
 Values of themagnetic transition temperature Tmag, superconductivity transition temperatureTc, upper critical field Hc2, chemical potential mu, and energy width forelectric conduction W(sigma) are obtained from these measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 2, ',', 0],[62.0, 140, 'K', 1],[67.0, 25, 'K', 1],[95.0, 32, 'T', 1],[100.0, 8, 'meV', 1]

W
###Magnetism, Upper critical field and Thermoelectric power of Magneto-Superconductor RuSr2Eu1.5Ce0.5Cu2O10|R. Lal,V. P. S. Awana,H. Kishan,Rajeev Rawat,V. Ganesan,A. V. Narlikar,M. Peurla,R. Laiho###
(172586, 172586)
 Values of themagnetic transition temperature Tmag, superconductivity transition temperatureTc, upper critical field Hc2, chemical potential mu, and energy width forelectric conduction W(sigma) are obtained from these measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 2, ',', 0],[29.0, 140, 'K', 1],[34.0, 25, 'K', 1],[62.0, 32, 'T', 1],[67.0, 8, 'meV', 1]

Tc
###Magnetism, Upper critical field and Thermoelectric power of Magneto-Superconductor RuSr2Eu1.5Ce0.5Cu2O10|R. Lal,V. P. S. Awana,H. Kishan,Rajeev Rawat,V. Ganesan,A. V. Narlikar,M. Peurla,R. Laiho###
(172618, 172618)
 It has beenfound that Tmag  140 K, Tc  25 K (33 K) from susceptibility(magnetoresistance) measurements, Hc2 (0) > 32 T, mu  8 meV, and W(sigma) 58.5 meV.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 2, ',', 1],[3.0, 140, 'K', 0],[2.0, 25, 'K', 0],[30.0, 32, 'T', 0],[35.0, 8, 'meV', 0]

K
###Magnetism, Upper critical field and Thermoelectric power of Magneto-Superconductor RuSr2Eu1.5Ce0.5Cu2O10|R. Lal,V. P. S. Awana,H. Kishan,Rajeev Rawat,V. Ganesan,A. V. Narlikar,M. Peurla,R. Laiho###
(172625, 172625)
 It has beenfound that Tmag  140 K, Tc  25 K (33 K) from susceptibility(magnetoresistance) measurements, Hc2 (0) > 32 T, mu  8 meV, and W(sigma) 58.5 meV.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 2, ',', 1],[10.0, 140, 'K', 0],[5.0, 25, 'K', 0],[23.0, 32, 'T', 0],[28.0, 8, 'meV', 0]

W
###Magnetism, Upper critical field and Thermoelectric power of Magneto-Superconductor RuSr2Eu1.5Ce0.5Cu2O10|R. Lal,V. P. S. Awana,H. Kishan,Rajeev Rawat,V. Ganesan,A. V. Narlikar,M. Peurla,R. Laiho###
(172658, 172658)
 It has beenfound that Tmag  140 K, Tc  25 K (33 K) from susceptibility(magnetoresistance) measurements, Hc2 (0) > 32 T, mu  8 meV, and W(sigma) 58.5 meV.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 2, ',', 1],[43.0, 140, 'K', 0],[38.0, 25, 'K', 0],[10.0, 32, 'T', 0],[5.0, 8, 'meV', 0]

V
###Magnetism, Upper critical field and Thermoelectric power of Magneto-Superconductor RuSr2Eu1.5Ce0.5Cu2O10|R. Lal,V. P. S. Awana,H. Kishan,Rajeev Rawat,V. Ganesan,A. V. Narlikar,M. Peurla,R. Laiho###
(172668, 172668)
 It has beenfound that Tmag  140 K, Tc  25 K (33 K) from susceptibility(magnetoresistance) measurements, Hc2 (0) > 32 T, mu  8 meV, and W(sigma) 58.5 meV.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 2, ',', 1],[53.0, 140, 'K', 0],[48.0, 25, 'K', 0],[20.0, 32, 'T', 0],[15.0, 8, 'meV', 0]

(Fe3O4)
###Giant Magnetoresistance in an all-oxide spacerless junction|Mangala Prasad Singh,Baptiste Carvello,Laurent Ranno###
(172781, 172786)
 Both electrodes are highspin-polarization oxides magnetite (Fe3O4) and manganite (La0.7Sr0.3MnO3).
Featurization successful!
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, -5, '%', 5],[191.0, 55, 'K', 5]

(La0.7Sr0.3MnO3)
###Giant Magnetoresistance in an all-oxide spacerless junction|Mangala Prasad Singh,Baptiste Carvello,Laurent Ranno###
(172792, 172800)
 Both electrodes are highspin-polarization oxides magnetite (Fe3O4) and manganite (La0.7Sr0.3MnO3).
Featurization successful!
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, -5, '%', 5],[177.0, 55, 'K', 5]

Fe3O4
###Giant Magnetoresistance in an all-oxide spacerless junction|Mangala Prasad Singh,Baptiste Carvello,Laurent Ranno###
(172935, 172938)
 the Fe3O4 layer has a negative spinpolarization at low temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, -5, '%', 1],[39.0, 55, 'K', 1]

Na0.34(H3O)0.15CoO2
###Anisotropic Magnetoresistance in Charge-Ordering $Na_{0.34}(H_3O)_{0.15}CoO_2$:Strong Spin-Charge Coupling and Spin Ordering|C. H. Wang,X. H. Chen,G. Wu,T. Wu,H. T. Zhang,J. L. Luo,G. T. Liu,N. L. Wang###
(172998, 173008)
Anisotropic Magnetoresistance in Charge-Ordering Na0.34(H3O)0.15CoO2Strong Spin-Charge Coupling and Spin Ordering.
Featurization terminated normally.
0.11421319796954314,0,0,0,0,0,0,0.5456852791878173,0,0,0.08629441624365483,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25380710659898476,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Na0.34(H3O)0.15CoO2
###Anisotropic Magnetoresistance in Charge-Ordering $Na_{0.34}(H_3O)_{0.15}CoO_2$:Strong Spin-Charge Coupling and Spin Ordering|C. H. Wang,X. H. Chen,G. Wu,T. Wu,H. T. Zhang,J. L. Luo,G. T. Liu,N. L. Wang###
(173047, 173057)
 Angular-dependent in-plane magnetoresistance (AMR) for single crystalNa0.34(H3O)0.15CoO2 with charge ordering is studied systematically.
Featurization terminated normally.
0.11421319796954314,0,0,0,0,0,0,0.5456852791878173,0,0,0.08629441624365483,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25380710659898476,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Anisotropic Magnetoresistance in Charge-Ordering $Na_{0.34}(H_3O)_{0.15}CoO_2$:Strong Spin-Charge Coupling and Spin Ordering|C. H. Wang,X. H. Chen,G. Wu,T. Wu,H. T. Zhang,J. L. Luo,G. T. Liu,N. L. Wang###
(173098, 173098)
The anisotropic magnetoresistance shows a twofold symmetry at high temperaturewith rotating H in the Co-O plane, while a sixfold symmetry below a certaintemperature (T<missing VAR>rho).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Anisotropic Magnetoresistance in Charge-Ordering $Na_{0.34}(H_3O)_{0.15}CoO_2$:Strong Spin-Charge Coupling and Spin Ordering|C. H. Wang,X. H. Chen,G. Wu,T. Wu,H. T. Zhang,J. L. Luo,G. T. Liu,N. L. Wang###
(173104, 173104)
The anisotropic magnetoresistance shows a twofold symmetry at high temperaturewith rotating H in the Co-O plane, while a sixfold symmetry below a certaintemperature (T<missing VAR>rho).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Anisotropic Magnetoresistance in Charge-Ordering $Na_{0.34}(H_3O)_{0.15}CoO_2$:Strong Spin-Charge Coupling and Spin Ordering|C. H. Wang,X. H. Chen,G. Wu,T. Wu,H. T. Zhang,J. L. Luo,G. T. Liu,N. L. Wang###
(173106, 173106)
The anisotropic magnetoresistance shows a twofold symmetry at high temperaturewith rotating H in the Co-O plane, while a sixfold symmetry below a certaintemperature (T<missing VAR>rho).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Anisotropic Magnetoresistance in Charge-Ordering $Na_{0.34}(H_3O)_{0.15}CoO_2$:Strong Spin-Charge Coupling and Spin Ordering|C. H. Wang,X. H. Chen,G. Wu,T. Wu,H. T. Zhang,J. L. Luo,G. T. Liu,N. L. Wang###
(173134, 173134)
 At T<missing VAR>rho, the symmetry of AMR changes from twofoldto fourfold with rotating magnetic field (H) in the plane consisting of thecurrent and c<missing VAR>-axis.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(H)
###Anisotropic Magnetoresistance in Charge-Ordering $Na_{0.34}(H_3O)_{0.15}CoO_2$:Strong Spin-Charge Coupling and Spin Ordering|C. H. Wang,X. H. Chen,G. Wu,T. Wu,H. T. Zhang,J. L. Luo,G. T. Liu,N. L. Wang###
(173169, 173171)
 At T<missing VAR>rho, the symmetry of AMR changes from twofoldto fourfold with rotating magnetic field (H) in the plane consisting of thecurrent and c<missing VAR>-axis.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.7Sr0.3MnO3
###Direct Correlation between 1/f-magneto-noise and magnetoresistance in La0.7Sr0.3MnO3 and (La0.5Pr0.2)Ba0.3MnO3 manganites|D. S. Rana,M. Ziese,S. K. Malik###
(173293, 173299)
Direct Correlation between 1/f<missing VAR>-magneto-noise and magnetoresistance in La0.7Sr0.3MnO3 and (La0.5Pr0.2)Ba0.3MnO3 manganites.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(La0.5Pr0.2)Ba0.3MnO3
###Direct Correlation between 1/f-magneto-noise and magnetoresistance in La0.7Sr0.3MnO3 and (La0.5Pr0.2)Ba0.3MnO3 manganites|D. S. Rana,M. Ziese,S. K. Malik###
(173303, 173313)
Direct Correlation between 1/f<missing VAR>-magneto-noise and magnetoresistance in La0.7Sr0.3MnO3 and (La0.5Pr0.2)Ba0.3MnO3 manganites.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0.1,0,0.04,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.7Sr0.3MnO3
###Direct Correlation between 1/f-magneto-noise and magnetoresistance in La0.7Sr0.3MnO3 and (La0.5Pr0.2)Ba0.3MnO3 manganites|D. S. Rana,M. Ziese,S. K. Malik###
(173365, 173371)
 Temperature- and magnetic field-dependent electrical noise and electricalresistivity measurements were carried out on epitaxial thin films of a largebandwidth La0.7Sr0.3MnO3 and a disordered intermediate bandwidth(La0.5Pr0.2)Ba0.3MnO3 manganite system.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(La0.5Pr0.2)Ba0.3MnO3
###Direct Correlation between 1/f-magneto-noise and magnetoresistance in La0.7Sr0.3MnO3 and (La0.5Pr0.2)Ba0.3MnO3 manganites|D. S. Rana,M. Ziese,S. K. Malik###
(173384, 173394)
 Temperature- and magnetic field-dependent electrical noise and electricalresistivity measurements were carried out on epitaxial thin films of a largebandwidth La0.7Sr0.3MnO3 and a disordered intermediate bandwidth(La0.5Pr0.2)Ba0.3MnO3 manganite system.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0.1,0,0.04,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si/SiGe
###Electron transport through antidot superlattices in $Si/SiGe$ heterostructures: new magnetoresistance resonances in lattices with large diameter antidots|E. B. Olshanetsky,Vincent Thomas Francois Renard,Z. D. Kvon,J. -C. Portal,J. -M. Hartmann###
(173568, 173571)
Electron transport through antidot superlattices in Si/SiGe heterostructures new magnetoresistance resonances in lattices with large diameter antidots.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[88.0, 700, 'nm', 2],[91.0, 850, 'nm', 2],[158.0, 600, 'nm', 3]

In
###Electron transport through antidot superlattices in $Si/SiGe$ heterostructures: new magnetoresistance resonances in lattices with large diameter antidots|E. B. Olshanetsky,Vincent Thomas Francois Renard,Z. D. Kvon,J. -C. Portal,J. -M. Hartmann###
(173594, 173594)
 In the present work we have investigated the transport properties in a numberof Si/SiGe samples with square antidot lattices of different periods.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 700, 'nm', 1],[68.0, 850, 'nm', 1],[135.0, 600, 'nm', 2]

Si/SiGe
###Electron transport through antidot superlattices in $Si/SiGe$ heterostructures: new magnetoresistance resonances in lattices with large diameter antidots|E. B. Olshanetsky,Vincent Thomas Francois Renard,Z. D. Kvon,J. -C. Portal,J. -M. Hartmann###
(173623, 173626)
 In the present work we have investigated the transport properties in a numberof Si/SiGe samples with square antidot lattices of different periods.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[33.0, 700, 'nm', 1],[36.0, 850, 'nm', 1],[103.0, 600, 'nm', 2]

In
###Electron transport through antidot superlattices in $Si/SiGe$ heterostructures: new magnetoresistance resonances in lattices with large diameter antidots|E. B. Olshanetsky,Vincent Thomas Francois Renard,Z. D. Kvon,J. -C. Portal,J. -M. Hartmann###
(173645, 173645)
 Insamples with lattice periods equal to 700 nm and 850 nm we have observed theconventional low-field commensurability magnetoresistance peaks consistent withthe previous observations in GaAs/AlGaAs and Si/SiGe samples with antidotlattices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 700, 'nm', 0],[17.0, 850, 'nm', 0],[84.0, 600, 'nm', 1]

GaAs/AlGaAs
###Electron transport through antidot superlattices in $Si/SiGe$ heterostructures: new magnetoresistance resonances in lattices with large diameter antidots|E. B. Olshanetsky,Vincent Thomas Francois Renard,Z. D. Kvon,J. -C. Portal,J. -M. Hartmann###
(173698, 173703)
 Insamples with lattice periods equal to 700 nm and 850 nm we have observed theconventional low-field commensurability magnetoresistance peaks consistent withthe previous observations in GaAs/AlGaAs and Si/SiGe samples with antidotlattices.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[39.0, 700, 'nm', 0],[36.0, 850, 'nm', 0],[26.0, 600, 'nm', 1]

Si/SiGe
###Electron transport through antidot superlattices in $Si/SiGe$ heterostructures: new magnetoresistance resonances in lattices with large diameter antidots|E. B. Olshanetsky,Vincent Thomas Francois Renard,Z. D. Kvon,J. -C. Portal,J. -M. Hartmann###
(173707, 173710)
 Insamples with lattice periods equal to 700 nm and 850 nm we have observed theconventional low-field commensurability magnetoresistance peaks consistent withthe previous observations in GaAs/AlGaAs and Si/SiGe samples with antidotlattices.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[48.0, 700, 'nm', 0],[45.0, 850, 'nm', 0],[19.0, 600, 'nm', 1]

In
###Electron transport through antidot superlattices in $Si/SiGe$ heterostructures: new magnetoresistance resonances in lattices with large diameter antidots|E. B. Olshanetsky,Vincent Thomas Francois Renard,Z. D. Kvon,J. -C. Portal,J. -M. Hartmann###
(173722, 173722)
 In samples with a 600 nm lattice period a new series ofwell-developed magnetoresistance oscillations has been found beyond the lastcommensurability peak which are supposed to originate from periodic skippingorbits encircling an antidot with a particular number of bounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 700, 'nm', 1],[60.0, 850, 'nm', 1],[7.0, 600, 'nm', 0]

(F)
###Flux-flow induced giant magnetoresistance in all-amorphous superconductor-ferromagnet hybrids|C. Bell,S. Tursucu,J. Aarts###
(173854, 173856)
 We present magnetoresistance measurements on all-amorphous ferromagnet (F) /superconductor (S) heterostructures.
Featurization successful!
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(S)
###Flux-flow induced giant magnetoresistance in all-amorphous superconductor-ferromagnet hybrids|C. Bell,S. Tursucu,J. Aarts###
(173863, 173865)
 We present magnetoresistance measurements on all-amorphous ferromagnet (F) /superconductor (S) heterostructures.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F/S/F
###Flux-flow induced giant magnetoresistance in all-amorphous superconductor-ferromagnet hybrids|C. Bell,S. Tursucu,J. Aarts###
(173872, 173876)
 The F/S/F trilayers show largemagnetoresistance peaks in a small field range around the coercive field of theF layers, at temperatures within and below the superconducting transition.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

F
###Flux-flow induced giant magnetoresistance in all-amorphous superconductor-ferromagnet hybrids|C. Bell,S. Tursucu,J. Aarts###
(173912, 173912)
 The F/S/F trilayers show largemagnetoresistance peaks in a small field range around the coercive field of theF layers, at temperatures within and below the superconducting transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Flux-flow induced giant magnetoresistance in all-amorphous superconductor-ferromagnet hybrids|C. Bell,S. Tursucu,J. Aarts###
(173978, 173978)
 Thisis interpreted as flux flow of weakly pinned vortices induced by the strayfield of Bloch magnetic domains in the F layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Flux-flow induced giant magnetoresistance in all-amorphous superconductor-ferromagnet hybrids|C. Bell,S. Tursucu,J. Aarts###
(174009, 174009)
 Bilayers show much smallereffects, implying that the Bloch walls of the F-layers in the trilayer line upand focus the stray fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Flux-flow induced giant magnetoresistance in all-amorphous superconductor-ferromagnet hybrids|C. Bell,S. Tursucu,J. Aarts###
(174054, 174054)
 The data are used to discuss the expected minimumF-layer thickness needed to nucleate vortices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

InAs
###Local Hall effect in hybrid ferromagnetic/semiconductor devices|Jinki Hong,Sungjung Joo,Tae-Suk Kim,Kungwon Rhie,K. H. Kim,S. U. Kim,B. C. Lee,Kyung-Ho Shin###
(174117, 174118)
 We have investigated the magnetoresistance of ferromagnet-semiconductordevices in an InAs two-dimensional electron gas system in which the magneticfield has a sinusoidal profile.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/GaAs/Au
###Spin-orbit induced anisotropy in the tunneling magnetoresistance of magnetic tunnel junctions|A. Matos-Abiague,J. Fabian###
(174520, 174525)
 The theoretical calculations are in good agreement with the TAMRexperimentally observed in epitaxial Fe/GaAs/Au tunnel junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Pr2-xCe
###High-field Hall resistivity and magnetoresistance in electron-doped Pr_2-xCe_xCuO_{4-δ}|Pengcheng Li,F. F. Balakirev,R. L. Greene###
(174558, 174562)
High-field Hall resistivity and magnetoresistance in electron-doped Pr2-xCex<missing VAR>CuO4-.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[52.0, 58, 'T', 1]

CuO4
###High-field Hall resistivity and magnetoresistance in electron-doped Pr_2-xCe_xCuO_{4-δ}|Pengcheng Li,F. F. Balakirev,R. L. Greene###
(174564, 174566)
High-field Hall resistivity and magnetoresistance in electron-doped Pr2-xCex<missing VAR>CuO4-.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 58, 'T', 1]

Pr2-xCe
###High-field Hall resistivity and magnetoresistance in electron-doped Pr_2-xCe_xCuO_{4-δ}|Pengcheng Li,F. F. Balakirev,R. L. Greene###
(174591, 174595)
 We report resistivity and Hall effect measurements in electron-dopedPr2-xCex<missing VAR>CuO4-delta films in magnetic field up to 58 T.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[19.0, 58, 'T', 0]

CuO4
###High-field Hall resistivity and magnetoresistance in electron-doped Pr_2-xCe_xCuO_{4-δ}|Pengcheng Li,F. F. Balakirev,R. L. Greene###
(174597, 174599)
 We report resistivity and Hall effect measurements in electron-dopedPr2-xCex<missing VAR>CuO4-delta films in magnetic field up to 58 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 58, 'T', 0]

In
###High-field Hall resistivity and magnetoresistance in electron-doped Pr_2-xCe_xCuO_{4-δ}|Pengcheng Li,F. F. Balakirev,R. L. Greene###
(174617, 174617)
 Incontrast to hole-doped cuprates, we find a surprising non-linear magnetic fielddependence of Hall resistivity at high field in the optimally doped andoverdoped films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 58, 'T', 1]

In
###Anharmonic behavior in Microwave-driven resistivity oscillations in Hall bars|Jesus Inarrea###
(175102, 175102)
 In such a regime, recent experiments show that different featuresappear in the magnetoresistivity response which suggest an anharmonic behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Influence of magnetic field offsets on the resistance of magnetic barriers in two-dimensional electron gases|S. Hugger,M. Cerchez,H. Xu,T. Heinzel###
(175298, 175298)
 Magnetic barriers in two-dimensional electron gases are shifted in B space byhomogeneous, perpendicular magnetic fields.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Influence of magnetic field offsets on the resistance of magnetic barriers in two-dimensional electron gases|S. Hugger,M. Cerchez,H. Xu,T. Heinzel###
(175430, 175430)
 The measurements are in quantitative agreement with semiclassicalsimulations, which reveal that the magnetoresistance originates from theinterplay of snake orbits with E x B drift at the edges of the Hall bar andwith elastic scattering.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Zn
###Origin of ferromagnetism in (Zn,Co)O from magnetization and spin-dependent magnetoresistance|T. Dietl,T. Andrearczyk,A. Lipińska,M. Kiecana,Maureen Tay,Yihong Wu###
(175475, 175475)
Origin of ferromagnetism in (Zn,Co)O from magnetization and spin-dependent magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Origin of ferromagnetism in (Zn,Co)O from magnetization and spin-dependent magnetoresistance|T. Dietl,T. Andrearczyk,A. Lipińska,M. Kiecana,Maureen Tay,Yihong Wu###
(175477, 175477)
Origin of ferromagnetism in (Zn,Co)O from magnetization and spin-dependent magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Origin of ferromagnetism in (Zn,Co)O from magnetization and spin-dependent magnetoresistance|T. Dietl,T. Andrearczyk,A. Lipińska,M. Kiecana,Maureen Tay,Yihong Wu###
(175479, 175479)
Origin of ferromagnetism in (Zn,Co)O from magnetization and spin-dependent magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Origin of ferromagnetism in (Zn,Co)O from magnetization and spin-dependent magnetoresistance|T. Dietl,T. Andrearczyk,A. Lipińska,M. Kiecana,Maureen Tay,Yihong Wu###
(175494, 175494)
 In order to elucidate the nature of ferromagnetic signatures observed in(Zn,Co)O we have examined experimentally and theoretically magnetic propertiesand spin-dependent quantum localization effects that control low-temperaturemagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Zn
###Origin of ferromagnetism in (Zn,Co)O from magnetization and spin-dependent magnetoresistance|T. Dietl,T. Andrearczyk,A. Lipińska,M. Kiecana,Maureen Tay,Yihong Wu###
(175518, 175518)
 In order to elucidate the nature of ferromagnetic signatures observed in(Zn,Co)O we have examined experimentally and theoretically magnetic propertiesand spin-dependent quantum localization effects that control low-temperaturemagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Origin of ferromagnetism in (Zn,Co)O from magnetization and spin-dependent magnetoresistance|T. Dietl,T. Andrearczyk,A. Lipińska,M. Kiecana,Maureen Tay,Yihong Wu###
(175520, 175520)
 In order to elucidate the nature of ferromagnetic signatures observed in(Zn,Co)O we have examined experimentally and theoretically magnetic propertiesand spin-dependent quantum localization effects that control low-temperaturemagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Origin of ferromagnetism in (Zn,Co)O from magnetization and spin-dependent magnetoresistance|T. Dietl,T. Andrearczyk,A. Lipińska,M. Kiecana,Maureen Tay,Yihong Wu###
(175522, 175522)
 In order to elucidate the nature of ferromagnetic signatures observed in(Zn,Co)O we have examined experimentally and theoretically magnetic propertiesand spin-dependent quantum localization effects that control low-temperaturemagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Zn
###Origin of ferromagnetism in (Zn,Co)O from magnetization and spin-dependent magnetoresistance|T. Dietl,T. Andrearczyk,A. Lipińska,M. Kiecana,Maureen Tay,Yihong Wu###
(175600, 175600)
 Our findings, together with a through structuralcharacterization, substantiate the model assigning spontaneous magnetization of(Zn,Co)O to uncompensated spins at the surface of antiferromagnetic nanocrystalof Co-rich wurtzite (Zn,Co)O.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Origin of ferromagnetism in (Zn,Co)O from magnetization and spin-dependent magnetoresistance|T. Dietl,T. Andrearczyk,A. Lipińska,M. Kiecana,Maureen Tay,Yihong Wu###
(175602, 175602)
 Our findings, together with a through structuralcharacterization, substantiate the model assigning spontaneous magnetization of(Zn,Co)O to uncompensated spins at the surface of antiferromagnetic nanocrystalof Co-rich wurtzite (Zn,Co)O.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Origin of ferromagnetism in (Zn,Co)O from magnetization and spin-dependent magnetoresistance|T. Dietl,T. Andrearczyk,A. Lipińska,M. Kiecana,Maureen Tay,Yihong Wu###
(175604, 175604)
 Our findings, together with a through structuralcharacterization, substantiate the model assigning spontaneous magnetization of(Zn,Co)O to uncompensated spins at the surface of antiferromagnetic nanocrystalof Co-rich wurtzite (Zn,Co)O.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Origin of ferromagnetism in (Zn,Co)O from magnetization and spin-dependent magnetoresistance|T. Dietl,T. Andrearczyk,A. Lipińska,M. Kiecana,Maureen Tay,Yihong Wu###
(175627, 175627)
 Our findings, together with a through structuralcharacterization, substantiate the model assigning spontaneous magnetization of(Zn,Co)O to uncompensated spins at the surface of antiferromagnetic nanocrystalof Co-rich wurtzite (Zn,Co)O.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Zn
###Origin of ferromagnetism in (Zn,Co)O from magnetization and spin-dependent magnetoresistance|T. Dietl,T. Andrearczyk,A. Lipińska,M. Kiecana,Maureen Tay,Yihong Wu###
(175634, 175634)
 Our findings, together with a through structuralcharacterization, substantiate the model assigning spontaneous magnetization of(Zn,Co)O to uncompensated spins at the surface of antiferromagnetic nanocrystalof Co-rich wurtzite (Zn,Co)O.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Origin of ferromagnetism in (Zn,Co)O from magnetization and spin-dependent magnetoresistance|T. Dietl,T. Andrearczyk,A. Lipińska,M. Kiecana,Maureen Tay,Yihong Wu###
(175636, 175636)
 Our findings, together with a through structuralcharacterization, substantiate the model assigning spontaneous magnetization of(Zn,Co)O to uncompensated spins at the surface of antiferromagnetic nanocrystalof Co-rich wurtzite (Zn,Co)O.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Origin of ferromagnetism in (Zn,Co)O from magnetization and spin-dependent magnetoresistance|T. Dietl,T. Andrearczyk,A. Lipińska,M. Kiecana,Maureen Tay,Yihong Wu###
(175638, 175638)
 Our findings, together with a through structuralcharacterization, substantiate the model assigning spontaneous magnetization of(Zn,Co)O to uncompensated spins at the surface of antiferromagnetic nanocrystalof Co-rich wurtzite (Zn,Co)O.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Origin of ferromagnetism in (Zn,Co)O from magnetization and spin-dependent magnetoresistance|T. Dietl,T. Andrearczyk,A. Lipińska,M. Kiecana,Maureen Tay,Yihong Wu###
(175678, 175678)
 The model explains a large anisotropy observed inboth magnetization and magnetoresistance in terms of spin hamiltonian of Coions in the crystal field of the wurtzite lattice.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(Ni80Fe20)
###Microwave photovoltage and photoresistance effects in ferromagnetic microstrips|N. Mecking,Y. S. Gui,C. -M. Hu###
(175752, 175757)
 We investigate the dc electric response induced by ferromagnetic resonance inferromagnetic Permalloy (Ni80Fe20) microstrips.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Microwave photovoltage and photoresistance effects in ferromagnetic microstrips|N. Mecking,Y. S. Gui,C. -M. Hu###
(175827, 175827)
 At the same time the time-dependent AMR oscillationrectifies a part of the rf current and induces a dc voltage (photovoltage).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr2
###Induced antiferromagnetism and large magnetoresistances in RuSr2(Nd,Y,Ce)2Cu2O10-d ruthenocuprates|A. C. Mclaughlin,F. Sher,S. A. J. Kimber,J. P. Attfield###
(176252, 176253)
Induced antiferromagnetism and large magnetoresistances in RuSr2(Nd,Y,Ce)2Cu2O10-d ruthenocuprates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 0.06, 'pseudogap', 2]

Nd
###Induced antiferromagnetism and large magnetoresistances in RuSr2(Nd,Y,Ce)2Cu2O10-d ruthenocuprates|A. C. Mclaughlin,F. Sher,S. A. J. Kimber,J. P. Attfield###
(176255, 176255)
Induced antiferromagnetism and large magnetoresistances in RuSr2(Nd,Y,Ce)2Cu2O10-d ruthenocuprates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 0.06, 'pseudogap', 2]

Y
###Induced antiferromagnetism and large magnetoresistances in RuSr2(Nd,Y,Ce)2Cu2O10-d ruthenocuprates|A. C. Mclaughlin,F. Sher,S. A. J. Kimber,J. P. Attfield###
(176257, 176257)
Induced antiferromagnetism and large magnetoresistances in RuSr2(Nd,Y,Ce)2Cu2O10-d ruthenocuprates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 0.06, 'pseudogap', 2]

Ce
###Induced antiferromagnetism and large magnetoresistances in RuSr2(Nd,Y,Ce)2Cu2O10-d ruthenocuprates|A. C. Mclaughlin,F. Sher,S. A. J. Kimber,J. P. Attfield###
(176259, 176259)
Induced antiferromagnetism and large magnetoresistances in RuSr2(Nd,Y,Ce)2Cu2O10-d ruthenocuprates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 0.06, 'pseudogap', 2]

Cu2O10-d
###Induced antiferromagnetism and large magnetoresistances in RuSr2(Nd,Y,Ce)2Cu2O10-d ruthenocuprates|A. C. Mclaughlin,F. Sher,S. A. J. Kimber,J. P. Attfield###
(176262, 176267)
Induced antiferromagnetism and large magnetoresistances in RuSr2(Nd,Y,Ce)2Cu2O10-d ruthenocuprates.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[136.0, 0.06, 'pseudogap', 2]

Sr2
###Induced antiferromagnetism and large magnetoresistances in RuSr2(Nd,Y,Ce)2Cu2O10-d ruthenocuprates|A. C. Mclaughlin,F. Sher,S. A. J. Kimber,J. P. Attfield###
(176273, 176274)
 RuSr2(Nd,Y,Ce)2Cu2O10-d ruthenocuprates have been studied by neutrondiffraction, magnetotransport and magnetisation measurements and the electronicphase diagram is reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 0.06, 'pseudogap', 1]

Nd
###Induced antiferromagnetism and large magnetoresistances in RuSr2(Nd,Y,Ce)2Cu2O10-d ruthenocuprates|A. C. Mclaughlin,F. Sher,S. A. J. Kimber,J. P. Attfield###
(176276, 176276)
 RuSr2(Nd,Y,Ce)2Cu2O10-d ruthenocuprates have been studied by neutrondiffraction, magnetotransport and magnetisation measurements and the electronicphase diagram is reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 0.06, 'pseudogap', 1]

Y
###Induced antiferromagnetism and large magnetoresistances in RuSr2(Nd,Y,Ce)2Cu2O10-d ruthenocuprates|A. C. Mclaughlin,F. Sher,S. A. J. Kimber,J. P. Attfield###
(176278, 176278)
 RuSr2(Nd,Y,Ce)2Cu2O10-d ruthenocuprates have been studied by neutrondiffraction, magnetotransport and magnetisation measurements and the electronicphase diagram is reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 0.06, 'pseudogap', 1]

Ce
###Induced antiferromagnetism and large magnetoresistances in RuSr2(Nd,Y,Ce)2Cu2O10-d ruthenocuprates|A. C. Mclaughlin,F. Sher,S. A. J. Kimber,J. P. Attfield###
(176280, 176280)
 RuSr2(Nd,Y,Ce)2Cu2O10-d ruthenocuprates have been studied by neutrondiffraction, magnetotransport and magnetisation measurements and the electronicphase diagram is reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 0.06, 'pseudogap', 1]

Cu2O10-d
###Induced antiferromagnetism and large magnetoresistances in RuSr2(Nd,Y,Ce)2Cu2O10-d ruthenocuprates|A. C. Mclaughlin,F. Sher,S. A. J. Kimber,J. P. Attfield###
(176283, 176288)
 RuSr2(Nd,Y,Ce)2Cu2O10-d ruthenocuprates have been studied by neutrondiffraction, magnetotransport and magnetisation measurements and the electronicphase diagram is reported.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[115.0, 0.06, 'pseudogap', 1]

Ru
###Induced antiferromagnetism and large magnetoresistances in RuSr2(Nd,Y,Ce)2Cu2O10-d ruthenocuprates|A. C. Mclaughlin,F. Sher,S. A. J. Kimber,J. P. Attfield###
(176332, 176332)
 Separate Ru and Cu spin ordering transitions areobserved, with spontaneous Cu antiferromagnetic order for low hole dopinglevels p<missing VAR>, and a distinct, induced-antiferromagnetic Cu spin phase in the 0.02 <p<missing VAR> < 0.06 pseudogap region.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 0.06, 'pseudogap', 0]

Cu
###Induced antiferromagnetism and large magnetoresistances in RuSr2(Nd,Y,Ce)2Cu2O10-d ruthenocuprates|A. C. Mclaughlin,F. Sher,S. A. J. Kimber,J. P. Attfield###
(176336, 176336)
 Separate Ru and Cu spin ordering transitions areobserved, with spontaneous Cu antiferromagnetic order for low hole dopinglevels p<missing VAR>, and a distinct, induced-antiferromagnetic Cu spin phase in the 0.02 <p<missing VAR> < 0.06 pseudogap region.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 0.06, 'pseudogap', 0]

Cu
###Induced antiferromagnetism and large magnetoresistances in RuSr2(Nd,Y,Ce)2Cu2O10-d ruthenocuprates|A. C. Mclaughlin,F. Sher,S. A. J. Kimber,J. P. Attfield###
(176354, 176354)
 Separate Ru and Cu spin ordering transitions areobserved, with spontaneous Cu antiferromagnetic order for low hole dopinglevels p<missing VAR>, and a distinct, induced-antiferromagnetic Cu spin phase in the 0.02 <p<missing VAR> < 0.06 pseudogap region.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 0.06, 'pseudogap', 0]

Cu
###Induced antiferromagnetism and large magnetoresistances in RuSr2(Nd,Y,Ce)2Cu2O10-d ruthenocuprates|A. C. Mclaughlin,F. Sher,S. A. J. Kimber,J. P. Attfield###
(176385, 176385)
 Separate Ru and Cu spin ordering transitions areobserved, with spontaneous Cu antiferromagnetic order for low hole dopinglevels p<missing VAR>, and a distinct, induced-antiferromagnetic Cu spin phase in the 0.02 <p<missing VAR> < 0.06 pseudogap region.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 0.06, 'pseudogap', 0]

RuSr2Nd1.8-xY0.2
###Induced antiferromagnetism and large magnetoresistances in RuSr2(Nd,Y,Ce)2Cu2O10-d ruthenocuprates|A. C. Mclaughlin,F. Sher,S. A. J. Kimber,J. P. Attfield###
(176440, 176448)
 This ordering gives rise to large negativemagnetoresistances which vary systematically with p<missing VAR> in theRuSr2Nd1.8-xY0.2CexCu2O10-d series.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[37.0, 0.06, 'pseudogap', 1]

Cu2O10-d
###Induced antiferromagnetism and large magnetoresistances in RuSr2(Nd,Y,Ce)2Cu2O10-d ruthenocuprates|A. C. Mclaughlin,F. Sher,S. A. J. Kimber,J. P. Attfield###
(176450, 176455)
 This ordering gives rise to large negativemagnetoresistances which vary systematically with p<missing VAR> in theRuSr2Nd1.8-xY0.2CexCu2O10-d series.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[47.0, 0.06, 'pseudogap', 1]

PrCo9Si4
###Magnetic phase transition and magnetocaloric effect in PrCo9Si4 and NdCo9Si4|Niharika Mohapatra,E. V. Sampathkumaran###
(176528, 176532)
Magnetic phase transition and magnetocaloric effect in PrCo9Si4 and NdCo9Si4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0.6428571428571429,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07142857142857142,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 24, 'K', 1]

NdCo9Si4
###Magnetic phase transition and magnetocaloric effect in PrCo9Si4 and NdCo9Si4|Niharika Mohapatra,E. V. Sampathkumaran###
(176536, 176540)
Magnetic phase transition and magnetocaloric effect in PrCo9Si4 and NdCo9Si4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0.6428571428571429,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07142857142857142,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 24, 'K', 1]

PrCo9Si4
###Magnetic phase transition and magnetocaloric effect in PrCo9Si4 and NdCo9Si4|Niharika Mohapatra,E. V. Sampathkumaran###
(176548, 176552)
 The compounds, PrCo9Si4 and NdCo9Si4, have been recently reported to exhibitfirst-order ferromagnetic transitions near 24 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0.6428571428571429,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07142857142857142,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 24, 'K', 0]

NdCo9Si4
###Magnetic phase transition and magnetocaloric effect in PrCo9Si4 and NdCo9Si4|Niharika Mohapatra,E. V. Sampathkumaran###
(176556, 176560)
 The compounds, PrCo9Si4 and NdCo9Si4, have been recently reported to exhibitfirst-order ferromagnetic transitions near 24 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0.6428571428571429,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07142857142857142,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 24, 'K', 0]

Ga
###Voltage control of magnetocrystalline anisotropy in ferromagnetic - semiconductor/piezoelectric hybrid structures|A. W. Rushforth,E. De Ranieri,J. Zemen,J. Wunderlich,K. W. Edmonds,C. S. King,E. Ahmad,R. P. Campion,C. T. Foxon,B. L. Gallagher,K. Vyborny,J. Kucera,T. Jungwirth###
(176792, 176792)
 We demonstrate dynamic voltage control of the magnetic anisotropy of a(Ga,Mn)As device bonded to a piezoelectric transducer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Voltage control of magnetocrystalline anisotropy in ferromagnetic - semiconductor/piezoelectric hybrid structures|A. W. Rushforth,E. De Ranieri,J. Zemen,J. Wunderlich,K. W. Edmonds,C. S. King,E. Ahmad,R. P. Campion,C. T. Foxon,B. L. Gallagher,K. Vyborny,J. Kucera,T. Jungwirth###
(176794, 176794)
 We demonstrate dynamic voltage control of the magnetic anisotropy of a(Ga,Mn)As device bonded to a piezoelectric transducer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Voltage control of magnetocrystalline anisotropy in ferromagnetic - semiconductor/piezoelectric hybrid structures|A. W. Rushforth,E. De Ranieri,J. Zemen,J. Wunderlich,K. W. Edmonds,C. S. King,E. Ahmad,R. P. Campion,C. T. Foxon,B. L. Gallagher,K. Vyborny,J. Kucera,T. Jungwirth###
(176796, 176796)
 We demonstrate dynamic voltage control of the magnetic anisotropy of a(Ga,Mn)As device bonded to a piezoelectric transducer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###Voltage control of magnetocrystalline anisotropy in ferromagnetic - semiconductor/piezoelectric hybrid structures|A. W. Rushforth,E. De Ranieri,J. Zemen,J. Wunderlich,K. W. Edmonds,C. S. King,E. Ahmad,R. P. Campion,C. T. Foxon,B. L. Gallagher,K. Vyborny,J. Kucera,T. Jungwirth###
(176891, 176891)
 Calculations based on the mean-fieldkinetic-exchange model of (Ga,Mn)As provide microscopic understanding of themeasured effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Voltage control of magnetocrystalline anisotropy in ferromagnetic - semiconductor/piezoelectric hybrid structures|A. W. Rushforth,E. De Ranieri,J. Zemen,J. Wunderlich,K. W. Edmonds,C. S. King,E. Ahmad,R. P. Campion,C. T. Foxon,B. L. Gallagher,K. Vyborny,J. Kucera,T. Jungwirth###
(176893, 176893)
 Calculations based on the mean-fieldkinetic-exchange model of (Ga,Mn)As provide microscopic understanding of themeasured effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Voltage control of magnetocrystalline anisotropy in ferromagnetic - semiconductor/piezoelectric hybrid structures|A. W. Rushforth,E. De Ranieri,J. Zemen,J. Wunderlich,K. W. Edmonds,C. S. King,E. Ahmad,R. P. Campion,C. T. Foxon,B. L. Gallagher,K. Vyborny,J. Kucera,T. Jungwirth###
(176895, 176895)
 Calculations based on the mean-fieldkinetic-exchange model of (Ga,Mn)As provide microscopic understanding of themeasured effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ca3Ru2O7
###Spin-valve effect and magnetoresistivity in single crystalline Ca3Ru2O7|Wei Bao,Z. Q. Mao,Z. Qu,J. W. Lynn###
(177029, 177034)
Spin-valve effect and magnetoresistivity in single crystalline Ca3Ru2O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ca3Ru2O7
###Spin-valve effect and magnetoresistivity in single crystalline Ca3Ru2O7|Wei Bao,Z. Q. Mao,Z. Qu,J. W. Lynn###
(177043, 177048)
 The laminar perovskite Ca3Ru2O7 naturally forms ferromagnetic double-layersof alternating moment directions, as in the spin-valve superlattices.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin-valve effect and magnetoresistivity in single crystalline Ca3Ru2O7|Wei Bao,Z. Q. Mao,Z. Qu,J. W. Lynn###
(177139, 177139)
 In this neutron diffraction study in a magnetic field,we identify four different magnetic phases in Ca3Ru2O7 and determine allfirst-order and second-order phase transitions between them.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ca3Ru2O7
###Spin-valve effect and magnetoresistivity in single crystalline Ca3Ru2O7|Wei Bao,Z. Q. Mao,Z. Qu,J. W. Lynn###
(177173, 177178)
 In this neutron diffraction study in a magnetic field,we identify four different magnetic phases in Ca3Ru2O7 and determine allfirst-order and second-order phase transitions between them.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ca3Ru2O7
###Spin-valve effect and magnetoresistivity in single crystalline Ca3Ru2O7|Wei Bao,Z. Q. Mao,Z. Qu,J. W. Lynn###
(177232, 177237)
 The spin-valvemechanism then readily explains the dominant magnetoresistive effect inCa3Ru2O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###High Bias Voltage Effect on Spin-Dependent Conductivity and Shot Noise in Carbon-doped Fe(001)/MgO(001)/Fe(001) Magnetic Tunnel Junctions|R. Guerrero,D. Herranz,F. G. Aliev,F. Greullet,C. Tiusan,M. Hehn,F. Montaigne###
(177558, 177558)
 Low temperature (10K) high voltage bias dynamic conductivity (up to 2.7V) andshot noise (up to 1V) were studied in epitaxial Fe(100)/Fe-C/MgO(100)/Fe(100)magnetic tunnel junctions, as a function of the magnetic state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 2.7, 'V', 0],[31.0, 1, 'V', 0],[99.0, 185, '%', 1],[103.0, 300, 'K', 1],[107.0, 330, '%', 1],[111.0, 4, 'K', 1]

Fe
###High Bias Voltage Effect on Spin-Dependent Conductivity and Shot Noise in Carbon-doped Fe(001)/MgO(001)/Fe(001) Magnetic Tunnel Junctions|R. Guerrero,D. Herranz,F. G. Aliev,F. Greullet,C. Tiusan,M. Hehn,F. Montaigne###
(177605, 177605)
 Low temperature (10K) high voltage bias dynamic conductivity (up to 2.7V) andshot noise (up to 1V) were studied in epitaxial Fe(100)/Fe-C/MgO(100)/Fe(100)magnetic tunnel junctions, as a function of the magnetic state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 2.7, 'V', 0],[16.0, 1, 'V', 0],[52.0, 185, '%', 1],[56.0, 300, 'K', 1],[60.0, 330, '%', 1],[64.0, 4, 'K', 1]

Fe
###High Bias Voltage Effect on Spin-Dependent Conductivity and Shot Noise in Carbon-doped Fe(001)/MgO(001)/Fe(001) Magnetic Tunnel Junctions|R. Guerrero,D. Herranz,F. G. Aliev,F. Greullet,C. Tiusan,M. Hehn,F. Montaigne###
(177717, 177717)
 Multiplesign inversion of the magnetoresistance is observed for bias polarity when theelectrons scan the electronic structure of the bottom Fe-C interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 2.7, 'V', 2],[128.0, 1, 'V', 2],[60.0, 185, '%', 1],[56.0, 300, 'K', 1],[52.0, 330, '%', 1],[48.0, 4, 'K', 1]

C
###High Bias Voltage Effect on Spin-Dependent Conductivity and Shot Noise in Carbon-doped Fe(001)/MgO(001)/Fe(001) Magnetic Tunnel Junctions|R. Guerrero,D. Herranz,F. G. Aliev,F. Greullet,C. Tiusan,M. Hehn,F. Montaigne###
(177719, 177719)
 Multiplesign inversion of the magnetoresistance is observed for bias polarity when theelectrons scan the electronic structure of the bottom Fe-C interface.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 2.7, 'V', 2],[130.0, 1, 'V', 2],[62.0, 185, '%', 1],[58.0, 300, 'K', 1],[54.0, 330, '%', 1],[50.0, 4, 'K', 1]

MgO
###High Bias Voltage Effect on Spin-Dependent Conductivity and Shot Noise in Carbon-doped Fe(001)/MgO(001)/Fe(001) Magnetic Tunnel Junctions|R. Guerrero,D. Herranz,F. G. Aliev,F. Greullet,C. Tiusan,M. Hehn,F. Montaigne###
(177776, 177777)
 This demonstrates a pure spindependent direct tunneling mechanism and validates the high structural qualityof the MgO barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[201.0, 2.7, 'V', 4],[187.0, 1, 'V', 4],[119.0, 185, '%', 3],[115.0, 300, 'K', 3],[111.0, 330, '%', 3],[107.0, 4, 'K', 3]

La0.7Ca0.3MnO3
###Origin of resistivity minima at low temperature in ferromagnetic metallic manganites|P. R. Sagdeo,R. J. Choudhary,D. M. Phase###
(178325, 178331)
 The resistivity and magnetoresistance measurements were carried out on thinfilm of La0.7Ca0.3MnO3 to investigate the possible origin of low temperatureresistivity minimum observed in these samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 5, 'K', 1]

I
###Origin of resistivity minima at low temperature in ferromagnetic metallic manganites|P. R. Sagdeo,R. J. Choudhary,D. M. Phase###
(178394, 178394)
 We observed large hysteresis inthe magnetoresistance at low temperature; 5K and the sample current I has largeeffect on resistivity minima temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 5, 'K', 0]

CoFe/CrMnPt
###Asymmetric Magnetization Reversal in a Single Exchange-Biased Micro Bar|T. Gredig,M. Tondra###
(178868, 178873)
 The asymmetric hysteresis loop ofCoFe/CrMnPt shows a repeatable rotation process, followed by an irreversiblenucleation process that is marked by jumps in the magnetoresistance.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[68.0, 1.5, 'x', 2],[67.0, 13, 'micrometer', 2]

CeIrIn5
###The precursor state to superconductivity in CeIrIn${_5}$: Unusual scaling of magnetotransport|Sunil Nair,M. Nicklas,F. Steglich,J. L. Sarrao,J. D. Thompson,A. J. Schofield,S. Wirth###
(179032, 179035)
The precursor state to superconductivity in CeIrIn5 Unusual scaling of magnetotransport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7142857142857143,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CeIrIn5
###The precursor state to superconductivity in CeIrIn${_5}$: Unusual scaling of magnetotransport|Sunil Nair,M. Nicklas,F. Steglich,J. L. Sarrao,J. D. Thompson,A. J. Schofield,S. Wirth###
(179081, 179084)
 We present an analysis of the normal-state Hall effect and magnetoresistancein the heavy fermion superconductor CeIrIn5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7142857142857143,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PH
###The magnetoresistance tensor of La(0.8)Sr(0.2)MnO(3)|Y. Bason,J. Hoffman,C. H. Ahn,L. Klein###
(179318, 179319)
 We measure the temperature dependence of the anisotropic magnetoresistance(AMR) and the planar Hall effect (PHE) in c<missing VAR>-axis oriented epitaxial thin filmsof La(0.8)Sr(0.2)MnO(3), for different current directions relative to thecrystal axes, and show that both AMR and PHE<missing VAR> depend strongly on currentorientation.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 4, 'th', 1]

PH
###The magnetoresistance tensor of La(0.8)Sr(0.2)MnO(3)|Y. Bason,J. Hoffman,C. H. Ahn,L. Klein###
(179389, 179390)
 We measure the temperature dependence of the anisotropic magnetoresistance(AMR) and the planar Hall effect (PHE) in c<missing VAR>-axis oriented epitaxial thin filmsof La(0.8)Sr(0.2)MnO(3), for different current directions relative to thecrystal axes, and show that both AMR and PHE<missing VAR> depend strongly on currentorientation.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 4, 'th', 1]

In
###Giant magnetoresistance in ultra-small Graphene based devices|F. Muñoz-Rojas,J. Fernandez-Rossier,J. J. Palacios###
(179596, 179596)
 In the ground state a short zig-zag ribbon is anantiferromagnetic insulator which, when connecting two metallic electrodes,acts as a tunnel barrier that suppresses the conductance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 100, '%', 1],[123.0, 10, 'Tesla', 2],[137.0, 300, 'Gauss', 2]

Co/Cu
###Probing Magnetic Configurations in Co/Cu Multilayered Nanowires|Jared Wong,Peter Greene,Randy K. Dumas,Kai Liu###
(179752, 179754)
Probing Magnetic Configurations in Co/Cu Multilayered Nanowires.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[97.0, 200, 'nm', 3]

In
###Probing Magnetic Configurations in Co/Cu Multilayered Nanowires|Jared Wong,Peter Greene,Randy K. Dumas,Kai Liu###
(179795, 179795)
 In this study we have capturedmagnetic and magnetoresistance fingerprints of Co nanodiscs embedded in Co/Cumultilayered nanowires using a first-order reversal curve method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 200, 'nm', 1]

Co
###Probing Magnetic Configurations in Co/Cu Multilayered Nanowires|Jared Wong,Peter Greene,Randy K. Dumas,Kai Liu###
(179818, 179818)
 In this study we have capturedmagnetic and magnetoresistance fingerprints of Co nanodiscs embedded in Co/Cumultilayered nanowires using a first-order reversal curve method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 200, 'nm', 1]

Co/Cu
###Probing Magnetic Configurations in Co/Cu Multilayered Nanowires|Jared Wong,Peter Greene,Randy K. Dumas,Kai Liu###
(179826, 179828)
 In this study we have capturedmagnetic and magnetoresistance fingerprints of Co nanodiscs embedded in Co/Cumultilayered nanowires using a first-order reversal curve method.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[23.0, 200, 'nm', 1]

In
###Probing Magnetic Configurations in Co/Cu Multilayered Nanowires|Jared Wong,Peter Greene,Randy K. Dumas,Kai Liu###
(179850, 179850)
 In 200nmdiameter nanowires, the magnetic configurations can be tuned by adjusting theCo nanodisc aspect ratio.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[1.0, 200, 'nm', 0]

Co
###Probing Magnetic Configurations in Co/Cu Multilayered Nanowires|Jared Wong,Peter Greene,Randy K. Dumas,Kai Liu###
(179878, 179878)
 In 200nmdiameter nanowires, the magnetic configurations can be tuned by adjusting theCo nanodisc aspect ratio.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 200, 'nm', 0]

Co
###Probing Magnetic Configurations in Co/Cu Multilayered Nanowires|Jared Wong,Peter Greene,Randy K. Dumas,Kai Liu###
(179895, 179895)
 Nanowires with the thinnest Co nanodiscs exhibitsingle domain behavior, while those with thicker Co reverse via vortex states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 200, 'nm', 1]

Co
###Probing Magnetic Configurations in Co/Cu Multilayered Nanowires|Jared Wong,Peter Greene,Randy K. Dumas,Kai Liu###
(179917, 179917)
 Nanowires with the thinnest Co nanodiscs exhibitsingle domain behavior, while those with thicker Co reverse via vortex states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 200, 'nm', 1]

Co
###Probing Magnetic Configurations in Co/Cu Multilayered Nanowires|Jared Wong,Peter Greene,Randy K. Dumas,Kai Liu###
(179967, 179967)
A superposition of giant and anisotropic magnetoresistance is observed, whichcorresponds to the different magnetic configurations of the Co nanodiscs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 200, 'nm', 2]

La
###Tunneling magnetoresistance in (La,Pr,Ca)MnO3 nanobridges|G. Singh-Bhalla,A. Biswas,A. F. Hebard###
(179987, 179987)
Tunneling magnetoresistance in (La,Pr,Ca)MnO3 nanobridges.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pr
###Tunneling magnetoresistance in (La,Pr,Ca)MnO3 nanobridges|G. Singh-Bhalla,A. Biswas,A. F. Hebard###
(179989, 179989)
Tunneling magnetoresistance in (La,Pr,Ca)MnO3 nanobridges.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ca
###Tunneling magnetoresistance in (La,Pr,Ca)MnO3 nanobridges|G. Singh-Bhalla,A. Biswas,A. F. Hebard###
(179991, 179991)
Tunneling magnetoresistance in (La,Pr,Ca)MnO3 nanobridges.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnO3
###Tunneling magnetoresistance in (La,Pr,Ca)MnO3 nanobridges|G. Singh-Bhalla,A. Biswas,A. F. Hebard###
(179993, 179995)
Tunneling magnetoresistance in (La,Pr,Ca)MnO3 nanobridges.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La
###Tunneling magnetoresistance in (La,Pr,Ca)MnO3 nanobridges|G. Singh-Bhalla,A. Biswas,A. F. Hebard###
(180005, 180005)
 The manganite (La,Pr,Ca)MnO3 is well known for its micrometer scale phaseseparation into coexisting ferromagnetic metallic and antiferromagneticinsulating (AFI) regions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pr
###Tunneling magnetoresistance in (La,Pr,Ca)MnO3 nanobridges|G. Singh-Bhalla,A. Biswas,A. F. Hebard###
(180007, 180007)
 The manganite (La,Pr,Ca)MnO3 is well known for its micrometer scale phaseseparation into coexisting ferromagnetic metallic and antiferromagneticinsulating (AFI) regions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ca
###Tunneling magnetoresistance in (La,Pr,Ca)MnO3 nanobridges|G. Singh-Bhalla,A. Biswas,A. F. Hebard###
(180009, 180009)
 The manganite (La,Pr,Ca)MnO3 is well known for its micrometer scale phaseseparation into coexisting ferromagnetic metallic and antiferromagneticinsulating (AFI) regions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnO3
###Tunneling magnetoresistance in (La,Pr,Ca)MnO3 nanobridges|G. Singh-Bhalla,A. Biswas,A. F. Hebard###
(180011, 180013)
 The manganite (La,Pr,Ca)MnO3 is well known for its micrometer scale phaseseparation into coexisting ferromagnetic metallic and antiferromagneticinsulating (AFI) regions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Tunneling magnetoresistance in (La,Pr,Ca)MnO3 nanobridges|G. Singh-Bhalla,A. Biswas,A. F. Hebard###
(180052, 180052)
 The manganite (La,Pr,Ca)MnO3 is well known for its micrometer scale phaseseparation into coexisting ferromagnetic metallic and antiferromagneticinsulating (AFI) regions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FI
###Tunneling magnetoresistance in (La,Pr,Ca)MnO3 nanobridges|G. Singh-Bhalla,A. Biswas,A. F. Hebard###
(180125, 180126)
 We observe tunneling magnetoresistanceacross naturally occurring AFI tunnel barriers separating adjacentferromagnetic regions spanning the width of the bridges.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Tunneling anisotropic magnetoresistance in organic spin valves|M. Gruenewald,M. Wahler,M. Michelfeit,C. Gould,R. Schmidt,F. Wuerthner,G. Schmidt,L. W. Molenkamp###
(180624, 180624)
 The effect originates from the tunneling injection fromthe LSMO contact and can thus occur even for organic layers which are too thickto support the assumption of tunneling through the layer.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nb
###Magnetoresistance Oscillations in Granular Superconducting Niobium Nitride Nanowires|U. Patel,Z. L. Xiao,A. Gurevich,S. Avci,J. Hua,R. Divan,U. Welp,W. K. Kwok###
(180766, 180766)
 We report on magnetoresistance oscillations in superconducting NbNx nanowiressynthesized through ammonia gas annealing of NbSe3 precursor nanostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbSe3
###Magnetoresistance Oscillations in Granular Superconducting Niobium Nitride Nanowires|U. Patel,Z. L. Xiao,A. Gurevich,S. Avci,J. Hua,R. Divan,U. Welp,W. K. Kwok###
(180784, 180786)
 We report on magnetoresistance oscillations in superconducting NbNx nanowiressynthesized through ammonia gas annealing of NbSe3 precursor nanostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Magnetoresistive junctions based on epitaxial graphene and hexagonal boron nitride|Oleg V. Yazyev,Alfredo Pasquarello###
(180986, 180986)
 We propose monolayer epitaxial graphene and hexagonal boron nitride (h<missing VAR>-BN) asultimate thickness covalent spacers for magnetoresistive junctions.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 100, '%', 2]

F
###Simulation of the Spin Field Effect Transistors: Effects of Tunneling and Spin Relaxation on its Performance|Yunfei Gao,Tony Low,Mark S. Lundstrom,Dmitri E. Nikonov###
(181235, 181235)
 A numerical simulation of spin-dependent quantum transport for a spin fieldeffect transistor (spinFET) is implemented in a widely used simulator nanoM<missing VAR>OS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OS
###Simulation of the Spin Field Effect Transistors: Effects of Tunneling and Spin Relaxation on its Performance|Yunfei Gao,Tony Low,Mark S. Lundstrom,Dmitri E. Nikonov###
(181256, 181257)
 A numerical simulation of spin-dependent quantum transport for a spin fieldeffect transistor (spinFET) is implemented in a widely used simulator nanoM<missing VAR>OS.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La2
###Magnetoresistance studies of $La_{2/3} Sr_{1/3} MnO_3$ - $YBa_2 Cu_3 O_7$ - $La_{2/3} Sr_{1/3} Mn O_3$ trilayers with ferromagnetic coupling along the nodal direction of $YBa_2 Cu_3 O_7$|Soumen Mandal###
(181453, 181454)
Magnetoresistance studies of La2/3 Sr1/3 MnO3 - YBa2 Cu3 O7 - La2/3 Sr1/3 Mn O3 trilayers with ferromagnetic coupling along the nodal direction of YBa2 Cu3 O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[256.0, 72000, '%', 5]

Sr1
###Magnetoresistance studies of $La_{2/3} Sr_{1/3} MnO_3$ - $YBa_2 Cu_3 O_7$ - $La_{2/3} Sr_{1/3} Mn O_3$ trilayers with ferromagnetic coupling along the nodal direction of $YBa_2 Cu_3 O_7$|Soumen Mandal###
(181458, 181459)
Magnetoresistance studies of La2/3 Sr1/3 MnO3 - YBa2 Cu3 O7 - La2/3 Sr1/3 Mn O3 trilayers with ferromagnetic coupling along the nodal direction of YBa2 Cu3 O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[251.0, 72000, '%', 5]

MnO3
###Magnetoresistance studies of $La_{2/3} Sr_{1/3} MnO_3$ - $YBa_2 Cu_3 O_7$ - $La_{2/3} Sr_{1/3} Mn O_3$ trilayers with ferromagnetic coupling along the nodal direction of $YBa_2 Cu_3 O_7$|Soumen Mandal###
(181463, 181465)
Magnetoresistance studies of La2/3 Sr1/3 MnO3 - YBa2 Cu3 O7 - La2/3 Sr1/3 Mn O3 trilayers with ferromagnetic coupling along the nodal direction of YBa2 Cu3 O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[245.0, 72000, '%', 5]

YBa2
###Magnetoresistance studies of $La_{2/3} Sr_{1/3} MnO_3$ - $YBa_2 Cu_3 O_7$ - $La_{2/3} Sr_{1/3} Mn O_3$ trilayers with ferromagnetic coupling along the nodal direction of $YBa_2 Cu_3 O_7$|Soumen Mandal###
(181469, 181471)
Magnetoresistance studies of La2/3 Sr1/3 MnO3 - YBa2 Cu3 O7 - La2/3 Sr1/3 Mn O3 trilayers with ferromagnetic coupling along the nodal direction of YBa2 Cu3 O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[239.0, 72000, '%', 5]

Cu3
###Magnetoresistance studies of $La_{2/3} Sr_{1/3} MnO_3$ - $YBa_2 Cu_3 O_7$ - $La_{2/3} Sr_{1/3} Mn O_3$ trilayers with ferromagnetic coupling along the nodal direction of $YBa_2 Cu_3 O_7$|Soumen Mandal###
(181473, 181474)
Magnetoresistance studies of La2/3 Sr1/3 MnO3 - YBa2 Cu3 O7 - La2/3 Sr1/3 Mn O3 trilayers with ferromagnetic coupling along the nodal direction of YBa2 Cu3 O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[236.0, 72000, '%', 5]

O7
###Magnetoresistance studies of $La_{2/3} Sr_{1/3} MnO_3$ - $YBa_2 Cu_3 O_7$ - $La_{2/3} Sr_{1/3} Mn O_3$ trilayers with ferromagnetic coupling along the nodal direction of $YBa_2 Cu_3 O_7$|Soumen Mandal###
(181476, 181477)
Magnetoresistance studies of La2/3 Sr1/3 MnO3 - YBa2 Cu3 O7 - La2/3 Sr1/3 Mn O3 trilayers with ferromagnetic coupling along the nodal direction of YBa2 Cu3 O7.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[233.0, 72000, '%', 5]

La2
###Magnetoresistance studies of $La_{2/3} Sr_{1/3} MnO_3$ - $YBa_2 Cu_3 O_7$ - $La_{2/3} Sr_{1/3} Mn O_3$ trilayers with ferromagnetic coupling along the nodal direction of $YBa_2 Cu_3 O_7$|Soumen Mandal###
(181481, 181482)
Magnetoresistance studies of La2/3 Sr1/3 MnO3 - YBa2 Cu3 O7 - La2/3 Sr1/3 Mn O3 trilayers with ferromagnetic coupling along the nodal direction of YBa2 Cu3 O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[228.0, 72000, '%', 5]

Sr1
###Magnetoresistance studies of $La_{2/3} Sr_{1/3} MnO_3$ - $YBa_2 Cu_3 O_7$ - $La_{2/3} Sr_{1/3} Mn O_3$ trilayers with ferromagnetic coupling along the nodal direction of $YBa_2 Cu_3 O_7$|Soumen Mandal###
(181486, 181487)
Magnetoresistance studies of La2/3 Sr1/3 MnO3 - YBa2 Cu3 O7 - La2/3 Sr1/3 Mn O3 trilayers with ferromagnetic coupling along the nodal direction of YBa2 Cu3 O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[223.0, 72000, '%', 5]

Mn
###Magnetoresistance studies of $La_{2/3} Sr_{1/3} MnO_3$ - $YBa_2 Cu_3 O_7$ - $La_{2/3} Sr_{1/3} Mn O_3$ trilayers with ferromagnetic coupling along the nodal direction of $YBa_2 Cu_3 O_7$|Soumen Mandal###
(181491, 181491)
Magnetoresistance studies of La2/3 Sr1/3 MnO3 - YBa2 Cu3 O7 - La2/3 Sr1/3 Mn O3 trilayers with ferromagnetic coupling along the nodal direction of YBa2 Cu3 O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[219.0, 72000, '%', 5]

O3
###Magnetoresistance studies of $La_{2/3} Sr_{1/3} MnO_3$ - $YBa_2 Cu_3 O_7$ - $La_{2/3} Sr_{1/3} Mn O_3$ trilayers with ferromagnetic coupling along the nodal direction of $YBa_2 Cu_3 O_7$|Soumen Mandal###
(181493, 181494)
Magnetoresistance studies of La2/3 Sr1/3 MnO3 - YBa2 Cu3 O7 - La2/3 Sr1/3 Mn O3 trilayers with ferromagnetic coupling along the nodal direction of YBa2 Cu3 O7.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[216.0, 72000, '%', 5]

YBa2
###Magnetoresistance studies of $La_{2/3} Sr_{1/3} MnO_3$ - $YBa_2 Cu_3 O_7$ - $La_{2/3} Sr_{1/3} Mn O_3$ trilayers with ferromagnetic coupling along the nodal direction of $YBa_2 Cu_3 O_7$|Soumen Mandal###
(181514, 181516)
Magnetoresistance studies of La2/3 Sr1/3 MnO3 - YBa2 Cu3 O7 - La2/3 Sr1/3 Mn O3 trilayers with ferromagnetic coupling along the nodal direction of YBa2 Cu3 O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[194.0, 72000, '%', 5]

Cu3
###Magnetoresistance studies of $La_{2/3} Sr_{1/3} MnO_3$ - $YBa_2 Cu_3 O_7$ - $La_{2/3} Sr_{1/3} Mn O_3$ trilayers with ferromagnetic coupling along the nodal direction of $YBa_2 Cu_3 O_7$|Soumen Mandal###
(181518, 181519)
Magnetoresistance studies of La2/3 Sr1/3 MnO3 - YBa2 Cu3 O7 - La2/3 Sr1/3 Mn O3 trilayers with ferromagnetic coupling along the nodal direction of YBa2 Cu3 O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[191.0, 72000, '%', 5]

O7
###Magnetoresistance studies of $La_{2/3} Sr_{1/3} MnO_3$ - $YBa_2 Cu_3 O_7$ - $La_{2/3} Sr_{1/3} Mn O_3$ trilayers with ferromagnetic coupling along the nodal direction of $YBa_2 Cu_3 O_7$|Soumen Mandal###
(181521, 181522)
Magnetoresistance studies of La2/3 Sr1/3 MnO3 - YBa2 Cu3 O7 - La2/3 Sr1/3 Mn O3 trilayers with ferromagnetic coupling along the nodal direction of YBa2 Cu3 O7.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 72000, '%', 5]

I
###Magnetoresistance studies of $La_{2/3} Sr_{1/3} MnO_3$ - $YBa_2 Cu_3 O_7$ - $La_{2/3} Sr_{1/3} Mn O_3$ trilayers with ferromagnetic coupling along the nodal direction of $YBa_2 Cu_3 O_7$|Soumen Mandal###
(181525, 181525)
 I have successfully prepared (110) trilayers of LSMO-YBCO-LSMO.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[185.0, 72000, '%', 4]

O
###Magnetoresistance studies of $La_{2/3} Sr_{1/3} MnO_3$ - $YBa_2 Cu_3 O_7$ - $La_{2/3} Sr_{1/3} Mn O_3$ trilayers with ferromagnetic coupling along the nodal direction of $YBa_2 Cu_3 O_7$|Soumen Mandal###
(181544, 181544)
 I have successfully prepared (110) trilayers of LSMO-YBCO-LSMO.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 72000, '%', 4]

YBCO
###Magnetoresistance studies of $La_{2/3} Sr_{1/3} MnO_3$ - $YBa_2 Cu_3 O_7$ - $La_{2/3} Sr_{1/3} Mn O_3$ trilayers with ferromagnetic coupling along the nodal direction of $YBa_2 Cu_3 O_7$|Soumen Mandal###
(181546, 181549)
 I have successfully prepared (110) trilayers of LSMO-YBCO-LSMO.
Featurization terminated normally.
0,0,0,0,0.25,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 72000, '%', 4]

O
###Magnetoresistance studies of $La_{2/3} Sr_{1/3} MnO_3$ - $YBa_2 Cu_3 O_7$ - $La_{2/3} Sr_{1/3} Mn O_3$ trilayers with ferromagnetic coupling along the nodal direction of $YBa_2 Cu_3 O_7$|Soumen Mandal###
(181554, 181554)
 I have successfully prepared (110) trilayers of LSMO-YBCO-LSMO.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 72000, '%', 4]

I
###Magnetoresistance studies of $La_{2/3} Sr_{1/3} MnO_3$ - $YBa_2 Cu_3 O_7$ - $La_{2/3} Sr_{1/3} Mn O_3$ trilayers with ferromagnetic coupling along the nodal direction of $YBa_2 Cu_3 O_7$|Soumen Mandal###
(181667, 181667)
 I have also measured theanisotropic magnetoresistance (AMR) of these samples revealing an unusuallyhigh AMR (sim 72000%).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 72000, '%', 0]

I
###Magnetoresistance studies of $La_{2/3} Sr_{1/3} MnO_3$ - $YBa_2 Cu_3 O_7$ - $La_{2/3} Sr_{1/3} Mn O_3$ trilayers with ferromagnetic coupling along the nodal direction of $YBa_2 Cu_3 O_7$|Soumen Mandal###
(181715, 181715)
 I attribute such a high AMR to the pair breakingeffects in these films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 72000, '%', 1]

B
###Theory of inplane magnetoresistance in two-dimensional massless Dirac fermion system|Takao Morinari,Takami Tohyama###
(182182, 182182)
 The theory is in goodagreement with the experiment of the layered organic conductoralpha-(BEDT-TTF)2I3 under pressure.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Theory of inplane magnetoresistance in two-dimensional massless Dirac fermion system|Takao Morinari,Takami Tohyama###
(182189, 182189)
 The theory is in goodagreement with the experiment of the layered organic conductoralpha-(BEDT-TTF)2I3 under pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I3
###Theory of inplane magnetoresistance in two-dimensional massless Dirac fermion system|Takao Morinari,Takami Tohyama###
(182192, 182193)
 The theory is in goodagreement with the experiment of the layered organic conductoralpha-(BEDT-TTF)2I3 under pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Theory of inplane magnetoresistance in two-dimensional massless Dirac fermion system|Takao Morinari,Takami Tohyama###
(182200, 182200)
 In-plane magnetoresistsnce of grapheneis also discussed based on this theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Colossal negative magnetoresistance in dilute fluorinated graphene|X. Hong,S. -H. Cheng,C. Herding,J. Zhu###
(182277, 182277)
 In this work, we create dilute fluorinated graphene using a clean,controlled and reversible approach.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 40, 'at', 2],[100.0, 9, 'T', 2],[129.0, 5, 'K', 3]

At
###Colossal negative magnetoresistance in dilute fluorinated graphene|X. Hong,S. -H. Cheng,C. Herding,J. Zhu###
(182311, 182311)
 At low carrier densities, the system isstrongly localized and exhibits an unexpected, colossal negativemagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 40, 'at', 1],[66.0, 9, 'T', 1],[95.0, 5, 'K', 2]

In
###Hydrodynamic description of transport in strongly correlated electron systems|A. V. Andreev,Steven A. Kivelson,B. Spivak###
(182548, 182548)
 In a broad range of temperatures, the dissipation is dominated by heatfluxes in the electron fluid, and the resistivity is inversely proportional tothe thermal conductivity, kappa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Functionalized Graphene for High Performance Two-dimensional Spintronics Devices|Linze Li,Rui Qin,Hong Li,Lili Yu,Qihang Liu,Guangfu Luo,Jing Lu,Zhengxiang Gao###
(182755, 182755)
Graphene functionalized with O on one side and H on the other side in the chairconformation is found to be a ferromagnetic metal with a spin-filter efficiencyup to 85% at finite bias.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 85, '%', 0],[162.0, 5400, '%', 2]

H
###Functionalized Graphene for High Performance Two-dimensional Spintronics Devices|Linze Li,Rui Qin,Hong Li,Lili Yu,Qihang Liu,Guangfu Luo,Jing Lu,Zhengxiang Gao###
(182765, 182765)
Graphene functionalized with O on one side and H on the other side in the chairconformation is found to be a ferromagnetic metal with a spin-filter efficiencyup to 85% at finite bias.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 85, '%', 0],[152.0, 5400, '%', 2]

F
###Functionalized Graphene for High Performance Two-dimensional Spintronics Devices|Linze Li,Rui Qin,Hong Li,Lili Yu,Qihang Liu,Guangfu Luo,Jing Lu,Zhengxiang Gao###
(182840, 182840)
 The ground state of graphene semi-functionalized withF in the chair conformation is an antiferromagnetic semiconductor, and weconstruct a magnetoresistive device from it by introducing a magnetic field tostabilize its ferromagnetic metallic state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 85, '%', 1],[77.0, 5400, '%', 1]

Bi2Se3
###Weak Antilocalization and Conductance Fluctuation in a Sub-micrometer-sized Wire of Epitaxial Bi2Se3|Sadashige Matsuo,Tomohiro Koyama,Kazutoshi Shimamura,Tomonori Arakawa,Yoshitaka Nishihara,Daichi Chiba,Kensuke Kobayashi,Teruo Ono,Cui-Zu Chang,Ke He,Xu-Cun Ma,Qi-Kun Xue###
(182981, 182984)
Weak Antilocalization and Conductance Fluctuation in a Sub-micrometer-sized Wire of Epitaxial Bi2Se3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 22, 'K', 1]

In
###Weak Antilocalization and Conductance Fluctuation in a Sub-micrometer-sized Wire of Epitaxial Bi2Se3|Sadashige Matsuo,Tomohiro Koyama,Kazutoshi Shimamura,Tomonori Arakawa,Yoshitaka Nishihara,Daichi Chiba,Kensuke Kobayashi,Teruo Ono,Cui-Zu Chang,Ke He,Xu-Cun Ma,Qi-Kun Xue###
(182987, 182987)
 In this study, we address the phase coherent transport in asub-micrometer-sized Hall bar made of epitaxial Bi2Se3 thin film by probing theweak antilocalization (WAL) and the magnetoresistance fluctuation below 22 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 22, 'K', 0]

Bi2Se3
###Weak Antilocalization and Conductance Fluctuation in a Sub-micrometer-sized Wire of Epitaxial Bi2Se3|Sadashige Matsuo,Tomohiro Koyama,Kazutoshi Shimamura,Tomonori Arakawa,Yoshitaka Nishihara,Daichi Chiba,Kensuke Kobayashi,Teruo Ono,Cui-Zu Chang,Ke He,Xu-Cun Ma,Qi-Kun Xue###
(183027, 183030)
 In this study, we address the phase coherent transport in asub-micrometer-sized Hall bar made of epitaxial Bi2Se3 thin film by probing theweak antilocalization (WAL) and the magnetoresistance fluctuation below 22 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 22, 'K', 0]

W
###Weak Antilocalization and Conductance Fluctuation in a Sub-micrometer-sized Wire of Epitaxial Bi2Se3|Sadashige Matsuo,Tomohiro Koyama,Kazutoshi Shimamura,Tomonori Arakawa,Yoshitaka Nishihara,Daichi Chiba,Kensuke Kobayashi,Teruo Ono,Cui-Zu Chang,Ke He,Xu-Cun Ma,Qi-Kun Xue###
(183048, 183048)
 In this study, we address the phase coherent transport in asub-micrometer-sized Hall bar made of epitaxial Bi2Se3 thin film by probing theweak antilocalization (WAL) and the magnetoresistance fluctuation below 22 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 22, 'K', 0]

W
###Weak Antilocalization and Conductance Fluctuation in a Sub-micrometer-sized Wire of Epitaxial Bi2Se3|Sadashige Matsuo,Tomohiro Koyama,Kazutoshi Shimamura,Tomonori Arakawa,Yoshitaka Nishihara,Daichi Chiba,Kensuke Kobayashi,Teruo Ono,Cui-Zu Chang,Ke He,Xu-Cun Ma,Qi-Kun Xue###
(183068, 183068)
The WAL<missing VAR> effect is well described by the Hikami-Larkin-Nagaoka model, where thetemperature dependence of the coherence length indicates that electronconduction occurs quasi-one-dimensionally in the narrow Hall bar.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 22, 'K', 1]

W
###Weak Antilocalization and Conductance Fluctuation in a Sub-micrometer-sized Wire of Epitaxial Bi2Se3|Sadashige Matsuo,Tomohiro Koyama,Kazutoshi Shimamura,Tomonori Arakawa,Yoshitaka Nishihara,Daichi Chiba,Kensuke Kobayashi,Teruo Ono,Cui-Zu Chang,Ke He,Xu-Cun Ma,Qi-Kun Xue###
(183192, 183192)
 Thetemperature-dependent magnetoresistance fluctuation is analyzed in terms of theuniversal conductance fluctuation, which gives a coherence length consistentwith that derived from the WAL<missing VAR> effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 22, 'K', 2]

(La0.5Eu0.5)0.7Pb0.3MnO3
###Magnetoresistance Relaxation in (La0.5Eu0.5)0.7Pb0.3MnO3 Single Crystals under the Action of a Pulse Magnetic Field|A. A. Bykov,S. I. Popkov,K. A. Shaykhutdinov,K. A. Sablina###
(183213, 183224)
Magnetoresistance Relaxation in (La0.5Eu0.5)0.7Pb0.3MnO3 Single Crystals under the Action of a Pulse Magnetic Field.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.06999999999999999,0,0,0,0,0,0.06999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 25, 'T', 1],[88.0, -3, 's', 2]

(La0.5Eu0.5)0.7Pb0.3MnO3
###Magnetoresistance Relaxation in (La0.5Eu0.5)0.7Pb0.3MnO3 Single Crystals under the Action of a Pulse Magnetic Field|A. A. Bykov,S. I. Popkov,K. A. Shaykhutdinov,K. A. Sablina###
(183257, 183268)
 Magnetoresistance of substituted lanthanum manganite (La0.5Eu0.5)0.7Pb0.3MnO3in the pulse magnetic field H  25 T was measured at different temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.06999999999999999,0,0,0,0,0,0.06999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 25, 'T', 0],[44.0, -3, 's', 1]

H
###Magnetoresistance Relaxation in (La0.5Eu0.5)0.7Pb0.3MnO3 Single Crystals under the Action of a Pulse Magnetic Field|A. A. Bykov,S. I. Popkov,K. A. Shaykhutdinov,K. A. Sablina###
(183281, 183281)
 Magnetoresistance of substituted lanthanum manganite (La0.5Eu0.5)0.7Pb0.3MnO3in the pulse magnetic field H  25 T was measured at different temperatures.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 25, 'T', 0],[31.0, -3, 's', 1]

Co
###Doping effects of Co, Ni, and Cu in FeTe0.65Se0.35 single crystals|V. L. Bezusyy,D. J. Gawryluk,M. Berkowski,M. Z. Cieplak###
(183697, 183697)
Doping effects of Co, Ni, and Cu in FeTe0.65Se0.35 single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Doping effects of Co, Ni, and Cu in FeTe0.65Se0.35 single crystals|V. L. Bezusyy,D. J. Gawryluk,M. Berkowski,M. Z. Cieplak###
(183700, 183700)
Doping effects of Co, Ni, and Cu in FeTe0.65Se0.35 single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Doping effects of Co, Ni, and Cu in FeTe0.65Se0.35 single crystals|V. L. Bezusyy,D. J. Gawryluk,M. Berkowski,M. Z. Cieplak###
(183705, 183705)
Doping effects of Co, Ni, and Cu in FeTe0.65Se0.35 single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeTe0.65Se0.35
###Doping effects of Co, Ni, and Cu in FeTe0.65Se0.35 single crystals|V. L. Bezusyy,D. J. Gawryluk,M. Berkowski,M. Z. Cieplak###
(183709, 183713)
Doping effects of Co, Ni, and Cu in FeTe0.65Se0.35 single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.175,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.325,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeTe0.65Se0.35
###Doping effects of Co, Ni, and Cu in FeTe0.65Se0.35 single crystals|V. L. Bezusyy,D. J. Gawryluk,M. Berkowski,M. Z. Cieplak###
(183747, 183751)
 The resistivity, magnetoresistance, and magnetic susceptibility are measuredin single crystals of FeTe0.65Se0.35 with Cu, Ni, and Co substitutions for Fe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.175,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.325,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Doping effects of Co, Ni, and Cu in FeTe0.65Se0.35 single crystals|V. L. Bezusyy,D. J. Gawryluk,M. Berkowski,M. Z. Cieplak###
(183755, 183755)
 The resistivity, magnetoresistance, and magnetic susceptibility are measuredin single crystals of FeTe0.65Se0.35 with Cu, Ni, and Co substitutions for Fe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Doping effects of Co, Ni, and Cu in FeTe0.65Se0.35 single crystals|V. L. Bezusyy,D. J. Gawryluk,M. Berkowski,M. Z. Cieplak###
(183758, 183758)
 The resistivity, magnetoresistance, and magnetic susceptibility are measuredin single crystals of FeTe0.65Se0.35 with Cu, Ni, and Co substitutions for Fe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Doping effects of Co, Ni, and Cu in FeTe0.65Se0.35 single crystals|V. L. Bezusyy,D. J. Gawryluk,M. Berkowski,M. Z. Cieplak###
(183763, 183763)
 The resistivity, magnetoresistance, and magnetic susceptibility are measuredin single crystals of FeTe0.65Se0.35 with Cu, Ni, and Co substitutions for Fe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Doping effects of Co, Ni, and Cu in FeTe0.65Se0.35 single crystals|V. L. Bezusyy,D. J. Gawryluk,M. Berkowski,M. Z. Cieplak###
(183769, 183769)
 The resistivity, magnetoresistance, and magnetic susceptibility are measuredin single crystals of FeTe0.65Se0.35 with Cu, Ni, and Co substitutions for Fe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Magnetotransport effects in polar versus non-polar SrTiO3 based heterostructures|E. Flekser,M. Ben Shalom,M. Kim,C. Bell,Y. Hikita,H. Y. Hwang,Y. Dagan###
(183936, 183939)
Magnetotransport effects in polar versus non-polar SrTiO3 based heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaAlO3
###Magnetotransport effects in polar versus non-polar SrTiO3 based heterostructures|E. Flekser,M. Ben Shalom,M. Kim,C. Bell,Y. Hikita,H. Y. Hwang,Y. Dagan###
(183973, 183976)
 Anisotropic magnetoresistance and negative magnetoresistance for in-planefields are compared for the LaAlO3 /SrTiO3 interface and the symmetric Nb-dopedSrTiO3 heterostructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Magnetotransport effects in polar versus non-polar SrTiO3 based heterostructures|E. Flekser,M. Ben Shalom,M. Kim,C. Bell,Y. Hikita,H. Y. Hwang,Y. Dagan###
(183979, 183982)
 Anisotropic magnetoresistance and negative magnetoresistance for in-planefields are compared for the LaAlO3 /SrTiO3 interface and the symmetric Nb-dopedSrTiO3 heterostructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nb
###Magnetotransport effects in polar versus non-polar SrTiO3 based heterostructures|E. Flekser,M. Ben Shalom,M. Kim,C. Bell,Y. Hikita,H. Y. Hwang,Y. Dagan###
(183992, 183992)
 Anisotropic magnetoresistance and negative magnetoresistance for in-planefields are compared for the LaAlO3 /SrTiO3 interface and the symmetric Nb-dopedSrTiO3 heterostructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Magnetotransport effects in polar versus non-polar SrTiO3 based heterostructures|E. Flekser,M. Ben Shalom,M. Kim,C. Bell,Y. Hikita,H. Y. Hwang,Y. Dagan###
(183997, 184000)
 Anisotropic magnetoresistance and negative magnetoresistance for in-planefields are compared for the LaAlO3 /SrTiO3 interface and the symmetric Nb-dopedSrTiO3 heterostructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaAlO3
###Magnetotransport effects in polar versus non-polar SrTiO3 based heterostructures|E. Flekser,M. Ben Shalom,M. Kim,C. Bell,Y. Hikita,H. Y. Hwang,Y. Dagan###
(184017, 184020)
 Both effects are exceptionally strong in LaAlO3 /SrTiO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Magnetotransport effects in polar versus non-polar SrTiO3 based heterostructures|E. Flekser,M. Ben Shalom,M. Kim,C. Bell,Y. Hikita,H. Y. Hwang,Y. Dagan###
(184023, 184026)
 Both effects are exceptionally strong in LaAlO3 /SrTiO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nb
###Magnetotransport effects in polar versus non-polar SrTiO3 based heterostructures|E. Flekser,M. Ben Shalom,M. Kim,C. Bell,Y. Hikita,H. Y. Hwang,Y. Dagan###
(184137, 184137)
 Atomic spin-orbit coupling is sufficient to explain thesmall effects observed in Nb-doped SrTiO3 .
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Magnetotransport effects in polar versus non-polar SrTiO3 based heterostructures|E. Flekser,M. Ben Shalom,M. Kim,C. Bell,Y. Hikita,H. Y. Hwang,Y. Dagan###
(184141, 184144)
 Atomic spin-orbit coupling is sufficient to explain thesmall effects observed in Nb-doped SrTiO3 .
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Magnetotransport effects in polar versus non-polar SrTiO3 based heterostructures|E. Flekser,M. Ben Shalom,M. Kim,C. Bell,Y. Hikita,H. Y. Hwang,Y. Dagan###
(184163, 184166)
 These results clarify contradictingtransport interpretations in SrTiO3 -based heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

UHV
###Domain-wall induced large magnetoresistance effects at zero applied field in ballistic nanocontacts|Arndt von Bieren,Ajit K. Patra,Stephen Krzyk,Jan Rhensius,Robert M. Reeve,Laura J. Heyderman,Regina Hoffmann-Vogel,Mathias Kläui###
(184243, 184245)
 We determine magnetoresistance effects in stable and clean permalloynanocontacts of variable cross-section, fabricated by UHV deposition andin-situ electromigration.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[100.0, 50, '%', 2]

In
###Domain-wall induced large magnetoresistance effects at zero applied field in ballistic nanocontacts|Arndt von Bieren,Ajit K. Patra,Stephen Krzyk,Jan Rhensius,Robert M. Reeve,Laura J. Heyderman,Regina Hoffmann-Vogel,Mathias Kläui###
(184320, 184320)
 In the ballistic transportregime, the MR ratio reaches up to 50% and exhibits a previously unobservedsign change.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 50, '%', 0]

Bi2Se3
###Linear magnetoresistance on the topological surface|C. M. Wang,X. L. Lei###
(184629, 184632)
 This linear magnetoresistance shows up within quite widemagnetic-field range in a spatially homogenous system of high carrier densityand low mobility in which the conduction electrons are in extended states andspread over many smeared Landau levels, and is robust against increasingtemperature, in agreement with recent experimental findings in Bi2Se3nanoribbons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Observation of linear-polarization-sensitivity in the microwave-radiation-induced magnetoresistance oscillations|R. G. Mani,A. N. Ramanayaka,W. Wegscheider###
(184671, 184671)
 In the quasi two-dimensional GaAs/AlGaAs system, we investigate the effect ofrotating textitin-situ the electric field of linearly polarized microwavesrelative to the current, on the microwave-radiation-induced magneto-resistanceoscillations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs/AlGaAs
###Observation of linear-polarization-sensitivity in the microwave-radiation-induced magnetoresistance oscillations|R. G. Mani,A. N. Ramanayaka,W. Wegscheider###
(184681, 184686)
 In the quasi two-dimensional GaAs/AlGaAs system, we investigate the effect ofrotating textitin-situ the electric field of linearly polarized microwavesrelative to the current, on the microwave-radiation-induced magneto-resistanceoscillations.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

(InO)
###Electrostatic Tuning of the Properties of Disordered Indium Oxide Films near the Superconductor-Insulator Transition|Yeonbae Lee,Aviad Frydman,Tianran Chen,Brian Skinner,A. M. Goldman###
(185213, 185216)
 The evolution with carrier concentration of the electrical properties ofamorphous indium oxide (InO) thin films has been studied using electronicdouble layer transistor configurations.
Featurization successful!
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 7, 'X', 1]

HgTe
###Linear magnetoresistance in HgTe quantum wells|G. M. Gusev,E. B Olshanetsky,Z. D. Kvon,N. N. Mikhailov,S. A. Dvoretsky###
(185402, 185403)
Linear magnetoresistance in HgTe quantum wells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 2, 'D', 2]

HgTe
###Linear magnetoresistance in HgTe quantum wells|G. M. Gusev,E. B Olshanetsky,Z. D. Kvon,N. N. Mikhailov,S. A. Dvoretsky###
(185422, 185423)
 We report magnetotransport measurements in a HgTe quantum well with aninverted band structure, which is expected to be a two-dimensional (2D)topological insulator.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 2, 'D', 1]

Bi2Te3
###Shubnikov de Haas quantum oscillation of the surface states in the metallic Bismuth Telluride sheets|Taishi Chen,Junhao Han,Zhaoguo Li,Fengqi Song,Bo Zhao,Xuefeng Wang,Baigeng Wang,Jianguo Wan,Min Han,Rong Zhang,Guanghou Wang###
(185693, 185696)
 Metallic Bi2Te3 crystalline sheets with the room-temperature resistivity ofabove 10 mOmega cm were prepared and their magnetoresistive transport wasmeasured in a field of up to 9 Tesla.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 10, 'm', 0],[53.0, 9, 'Tesla', 0]

At
###Signatures of the Berry curvature in the frequency dependent interlayer magnetoresistance in tilted magnetic fields|Anthony R. Wright,Ross H. McKenzie###
(186002, 186002)
 At zero frequency, we find a conservation lawwhich demands that the magic angle condition for interlayer magnetoresistanceextrema as a function of magnetic field tilt angle is essentially both fieldand Berry curvature independent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Signatures of the Berry curvature in the frequency dependent interlayer magnetoresistance in tilted magnetic fields|Anthony R. Wright,Ross H. McKenzie###
(186077, 186077)
 In the finite frequency case, however, we findthat surprisingly large signatures of a finite Berry curvature occur in theperiodic orbit resonances.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Characteristic Sign Change of the Magnetoresistance of Strongly Correlated GaAs Two-dimensional Holes|Jian Huang,L. N. Pfeiffer,K. W. West###
(186196, 186197)
Characteristic Sign Change of the Magnetoresistance of Strongly Correlated GaAs Two-dimensional Holes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 40.0, 'We', 1],[87.0, 2, 'D', 1]

S
###Phase Transition to Insulating State from Quantum Hall State by Current-Induced Nuclear Spin Polarization|Shibun Tsuda,Minh-Hai Nguyen,Daiju Terasawa,Akira Fukuda,Anju Sawada###
(186477, 186477)
 We investigate the resistance enhancement state (RES) where themagnetoresistance of the nu  2/3 fractional quantum Hall state (FQ<missing VAR>HS) isincreased with dynamic nuclear spin polarization (D<missing VAR>NP) induced by a largeelectric current.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Phase Transition to Insulating State from Quantum Hall State by Current-Induced Nuclear Spin Polarization|Shibun Tsuda,Minh-Hai Nguyen,Daiju Terasawa,Akira Fukuda,Anju Sawada###
(186507, 186507)
 We investigate the resistance enhancement state (RES) where themagnetoresistance of the nu  2/3 fractional quantum Hall state (FQ<missing VAR>HS) isincreased with dynamic nuclear spin polarization (D<missing VAR>NP) induced by a largeelectric current.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Phase Transition to Insulating State from Quantum Hall State by Current-Induced Nuclear Spin Polarization|Shibun Tsuda,Minh-Hai Nguyen,Daiju Terasawa,Akira Fukuda,Anju Sawada###
(186510, 186510)
 We investigate the resistance enhancement state (RES) where themagnetoresistance of the nu  2/3 fractional quantum Hall state (FQ<missing VAR>HS) isincreased with dynamic nuclear spin polarization (D<missing VAR>NP) induced by a largeelectric current.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Phase Transition to Insulating State from Quantum Hall State by Current-Induced Nuclear Spin Polarization|Shibun Tsuda,Minh-Hai Nguyen,Daiju Terasawa,Akira Fukuda,Anju Sawada###
(186531, 186531)
 We investigate the resistance enhancement state (RES) where themagnetoresistance of the nu  2/3 fractional quantum Hall state (FQ<missing VAR>HS) isincreased with dynamic nuclear spin polarization (D<missing VAR>NP) induced by a largeelectric current.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NP
###Phase Transition to Insulating State from Quantum Hall State by Current-Induced Nuclear Spin Polarization|Shibun Tsuda,Minh-Hai Nguyen,Daiju Terasawa,Akira Fukuda,Anju Sawada###
(186553, 186554)
 After inducing D<missing VAR>NP, we measure the temperature dependence ofthe magnetoresistance by a small current over a short period of time.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Phase Transition to Insulating State from Quantum Hall State by Current-Induced Nuclear Spin Polarization|Shibun Tsuda,Minh-Hai Nguyen,Daiju Terasawa,Akira Fukuda,Anju Sawada###
(186604, 186604)
 We findthat the FQ<missing VAR>HS makes a phase transition to an insulating state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HS
###Phase Transition to Insulating State from Quantum Hall State by Current-Induced Nuclear Spin Polarization|Shibun Tsuda,Minh-Hai Nguyen,Daiju Terasawa,Akira Fukuda,Anju Sawada###
(186606, 186607)
 We findthat the FQ<missing VAR>HS makes a phase transition to an insulating state.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Phase Transition to Insulating State from Quantum Hall State by Current-Induced Nuclear Spin Polarization|Shibun Tsuda,Minh-Hai Nguyen,Daiju Terasawa,Akira Fukuda,Anju Sawada###
(186656, 186656)
 By measuring theHall resistance in the insulating state, we find that the RES exhibits aquantized Hall resistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Phase Transition to Insulating State from Quantum Hall State by Current-Induced Nuclear Spin Polarization|Shibun Tsuda,Minh-Hai Nguyen,Daiju Terasawa,Akira Fukuda,Anju Sawada###
(186678, 186678)
 We discuss the RES in association with the Andersonlocalization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe3O4
###Engineered spin-valve type magnetoresistance in Fe$_3$O$_4$-CoFe$_2$O$_4$ core-shell nanoparticles|P. Anil Kumar,Sugata Ray,S. Chakraverty,D. D. Sarma###
(186714, 186717)
Engineered spin-valve type magnetoresistance in Fe3O4-CoFe2O4 core-shell nanoparticles.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFe2O4
###Engineered spin-valve type magnetoresistance in Fe$_3$O$_4$-CoFe$_2$O$_4$ core-shell nanoparticles|P. Anil Kumar,Sugata Ray,S. Chakraverty,D. D. Sarma###
(186719, 186723)
Engineered spin-valve type magnetoresistance in Fe3O4-CoFe2O4 core-shell nanoparticles.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SV
###Engineered spin-valve type magnetoresistance in Fe$_3$O$_4$-CoFe$_2$O$_4$ core-shell nanoparticles|P. Anil Kumar,Sugata Ray,S. Chakraverty,D. D. Sarma###
(186745, 186746)
 Naturally occurring spin-valve-type magnetoresistance (SVMR), recentlyobserved in Sr2FeMoO6 samples, suggests the possibility of decoupling themaximal resistance from the coercivity of the sample.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr2FeMoO6
###Engineered spin-valve type magnetoresistance in Fe$_3$O$_4$-CoFe$_2$O$_4$ core-shell nanoparticles|P. Anil Kumar,Sugata Ray,S. Chakraverty,D. D. Sarma###
(186759, 186764)
 Naturally occurring spin-valve-type magnetoresistance (SVMR), recentlyobserved in Sr2FeMoO6 samples, suggests the possibility of decoupling themaximal resistance from the coercivity of the sample.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SV
###Engineered spin-valve type magnetoresistance in Fe$_3$O$_4$-CoFe$_2$O$_4$ core-shell nanoparticles|P. Anil Kumar,Sugata Ray,S. Chakraverty,D. D. Sarma###
(186812, 186813)
 Here we present theevidence that SVMR can be engineered in specifically designed and fabricatedcore-shell nanoparticle systems, realized here in terms of soft magnetic Fe3O4as the core and hard magnetic insulator CoFe2O4 as the shell materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe3O4
###Engineered spin-valve type magnetoresistance in Fe$_3$O$_4$-CoFe$_2$O$_4$ core-shell nanoparticles|P. Anil Kumar,Sugata Ray,S. Chakraverty,D. D. Sarma###
(186857, 186860)
 Here we present theevidence that SVMR can be engineered in specifically designed and fabricatedcore-shell nanoparticle systems, realized here in terms of soft magnetic Fe3O4as the core and hard magnetic insulator CoFe2O4 as the shell materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFe2O4
###Engineered spin-valve type magnetoresistance in Fe$_3$O$_4$-CoFe$_2$O$_4$ core-shell nanoparticles|P. Anil Kumar,Sugata Ray,S. Chakraverty,D. D. Sarma###
(186877, 186881)
 Here we present theevidence that SVMR can be engineered in specifically designed and fabricatedcore-shell nanoparticle systems, realized here in terms of soft magnetic Fe3O4as the core and hard magnetic insulator CoFe2O4 as the shell materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe3O4
###Engineered spin-valve type magnetoresistance in Fe$_3$O$_4$-CoFe$_2$O$_4$ core-shell nanoparticles|P. Anil Kumar,Sugata Ray,S. Chakraverty,D. D. Sarma###
(186951, 186954)
 We showthat this provides a magnetically switchable tunnel barrier that controls themagnetoresistance of the system, instead of the magnetic properties of themagnetic grain material, Fe3O4, and thus establishing the feasibility ofengineered SVMR structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SV
###Engineered spin-valve type magnetoresistance in Fe$_3$O$_4$-CoFe$_2$O$_4$ core-shell nanoparticles|P. Anil Kumar,Sugata Ray,S. Chakraverty,D. D. Sarma###
(186972, 186973)
 We showthat this provides a magnetically switchable tunnel barrier that controls themagnetoresistance of the system, instead of the magnetic properties of themagnetic grain material, Fe3O4, and thus establishing the feasibility ofengineered SVMR structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nd0.75Na0.25MnO3
###Giant magnetothermopower in charge ordered Nd0.75Na0.25MnO3|D. V. Maheswar Repaka,R. Mahendiran###
(186998, 187004)
Giant magnetothermopower in charge ordered Nd0.75Na0.25MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0.05,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, -100, '%', 2],[88.0, 5, 'T', 2],[149.0, 40, 'K', 3]

Nd0.75Na0.25MnO3
###Giant magnetothermopower in charge ordered Nd0.75Na0.25MnO3|D. V. Maheswar Repaka,R. Mahendiran###
(187033, 187039)
 We report magnetization, resistivity and thermopower in the charge-orbitalordered antiferromagnet Nd0.75Na0.25MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0.05,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, -100, '%', 1],[53.0, 5, 'T', 1],[114.0, 40, 'K', 2]

K
###Giant magnetothermopower in charge ordered Nd0.75Na0.25MnO3|D. V. Maheswar Repaka,R. Mahendiran###
(187111, 187111)
 Magnetic-field induced collapse ofantiferromagnetism is found to be accompanied by a giant negativemagnetothermopower ( 80-100% for a field change of 5T) over a wide temperature(T<missing VAR>  60-225K) and giant magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, -100, '%', 0],[19.0, 5, 'T', 0],[42.0, 40, 'K', 1]

LaOMnAs
###First Principles Study of the Magnetic Properties of LaOMnAs|Shuai Dong,Wei Li,Xin Huang,Elbio Dagotto###
(187265, 187268)
First Principles Study of the Magnetic Properties of LaOMnAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaOMnAs
###First Principles Study of the Magnetic Properties of LaOMnAs|Shuai Dong,Wei Li,Xin Huang,Elbio Dagotto###
(187290, 187293)
 Recent experiments reported giant magnetoresistance at room temperature inLaOMnAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaOMnAs
###First Principles Study of the Magnetic Properties of LaOMnAs|Shuai Dong,Wei Li,Xin Huang,Elbio Dagotto###
(187323, 187326)
 Here a density functional theory calculation is performed toinvestigate magnetic properties of LaOMnAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi
###Magnetoresistive property study of direct and indirect band gap thermoelectric Bi-Sb alloys|Diptasikha Das,K. Malik,S. Bandyopadhyay,D. Das,S. Chatterjee,Aritra Banerjee###
(187507, 187507)
Magnetoresistive property study of direct and indirect band gap thermoelectric Bi-Sb alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sb
###Magnetoresistive property study of direct and indirect band gap thermoelectric Bi-Sb alloys|Diptasikha Das,K. Malik,S. Bandyopadhyay,D. Das,S. Chatterjee,Aritra Banerjee###
(187509, 187509)
Magnetoresistive property study of direct and indirect band gap thermoelectric Bi-Sb alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi
###Magnetoresistive property study of direct and indirect band gap thermoelectric Bi-Sb alloys|Diptasikha Das,K. Malik,S. Bandyopadhyay,D. Das,S. Chatterjee,Aritra Banerjee###
(187540, 187540)
 We report magnetoresistive properties of direct and indirect band gapBismuth-Antimony (Bi-Sb) alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sb
###Magnetoresistive property study of direct and indirect band gap thermoelectric Bi-Sb alloys|Diptasikha Das,K. Malik,S. Bandyopadhyay,D. Das,S. Chatterjee,Aritra Banerjee###
(187542, 187542)
 We report magnetoresistive properties of direct and indirect band gapBismuth-Antimony (Bi-Sb) alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs/AlGaAs
###Nonlinear transport in 2D electron gas exhibiting colossal negative magnetoresistance|Q. Shi,M. A. Zudov,L. N. Pfeiffer,K. W. West###
(187771, 187776)
 We report on nonlinear transport measurements in a GaAs/AlGaAs quantum wellexhibiting a colossal negative magnetoresistance effect.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[31.0, 2, 'D', 1],[157.0, 35, 'years', 3]

In
###Nonlinear transport in 2D electron gas exhibiting colossal negative magnetoresistance|Q. Shi,M. A. Zudov,L. N. Pfeiffer,K. W. West###
(187841, 187841)
 In the range ofmagnetic fields corresponding to the resistivity minimum at zero bias, theresistivity increases linearly with current and the rate of this increasescales with the inverse magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 2, 'D', 3],[92.0, 35, 'years', 1]

HoSn1.1Ge0.9
###A comparative study of HoSn1.1Ge0.9 and DySn1.1Ge0.9 compounds using magnetic, magneto-thermal and magneto-transport measurements|Sachin Gupta,V. R. Reddy,G. S. Okram,K. G. Suresh###
(187979, 187983)
A comparative study of HoSn1.1Ge0.9 and DySn1.1Ge0.9 compounds using magnetic, magneto-thermal and magneto-transport measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3666666666666667,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[192.0, 119, 'Sn', 5]

DySn1.1Ge0.9
###A comparative study of HoSn1.1Ge0.9 and DySn1.1Ge0.9 compounds using magnetic, magneto-thermal and magneto-transport measurements|Sachin Gupta,V. R. Reddy,G. S. Okram,K. G. Suresh###
(187987, 187991)
A comparative study of HoSn1.1Ge0.9 and DySn1.1Ge0.9 compounds using magnetic, magneto-thermal and magneto-transport measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3666666666666667,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[184.0, 119, 'Sn', 5]

HoSn1.1Ge0.9
###A comparative study of HoSn1.1Ge0.9 and DySn1.1Ge0.9 compounds using magnetic, magneto-thermal and magneto-transport measurements|Sachin Gupta,V. R. Reddy,G. S. Okram,K. G. Suresh###
(188015, 188019)
 Polycrystalline HoSn1.1Ge0.9 and DySn1.1Ge0.9 compounds have been studied bymeans of different experimental probes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3666666666666667,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 119, 'Sn', 4]

DySn1.1Ge0.9
###A comparative study of HoSn1.1Ge0.9 and DySn1.1Ge0.9 compounds using magnetic, magneto-thermal and magneto-transport measurements|Sachin Gupta,V. R. Reddy,G. S. Okram,K. G. Suresh###
(188023, 188027)
 Polycrystalline HoSn1.1Ge0.9 and DySn1.1Ge0.9 compounds have been studied bymeans of different experimental probes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3666666666666667,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 119, 'Sn', 4]

HoSn1.1Ge0.9
###A comparative study of HoSn1.1Ge0.9 and DySn1.1Ge0.9 compounds using magnetic, magneto-thermal and magneto-transport measurements|Sachin Gupta,V. R. Reddy,G. S. Okram,K. G. Suresh###
(188078, 188082)
HoSn1.1Ge0.9 shows a sign change in magnetocaloric effect (MCE) andmagnetoresistance (MR) with field, which is attributed to the metamagnetictransition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3666666666666667,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 119, 'Sn', 2]

DySn1.1Ge0.9
###A comparative study of HoSn1.1Ge0.9 and DySn1.1Ge0.9 compounds using magnetic, magneto-thermal and magneto-transport measurements|Sachin Gupta,V. R. Reddy,G. S. Okram,K. G. Suresh###
(188135, 188139)
 DySn1.1Ge0.9 shows characteristics of a typical antiferromagnet, asevidenced by magnetization, MCE and MR data.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3666666666666667,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 119, 'Sn', 1]

DySn1.1Ge0.9
###A comparative study of HoSn1.1Ge0.9 and DySn1.1Ge0.9 compounds using magnetic, magneto-thermal and magneto-transport measurements|Sachin Gupta,V. R. Reddy,G. S. Okram,K. G. Suresh###
(188258, 188262)
 Magnetic, magnetocaloric and the magnetoresistance dataclearly show that the antiferromagnetic coupling in DySn1.1Ge0.9 is strongerthan in HoSn1.1Ge0.9.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3666666666666667,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 119, 'Sn', 2]

HoSn1.1Ge0.9
###A comparative study of HoSn1.1Ge0.9 and DySn1.1Ge0.9 compounds using magnetic, magneto-thermal and magneto-transport measurements|Sachin Gupta,V. R. Reddy,G. S. Okram,K. G. Suresh###
(188273, 188277)
 Magnetic, magnetocaloric and the magnetoresistance dataclearly show that the antiferromagnetic coupling in DySn1.1Ge0.9 is strongerthan in HoSn1.1Ge0.9.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3666666666666667,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 119, 'Sn', 2]

SrCo6O11
###Observation of Devil's Staircase in the Novel Spin Valve System SrCo$_6$O$_{11}$|T. Matsuda,S. Partzsch,T. Tsuyama,E. Schierle,E. Weschke,J. Geck,T. Saito,S. Ishiwata,Y. Tokura,H. Wadati###
(188309, 188313)
Observation of Devils<missing VAR> Staircase in the Novel Spin Valve System SrCo6O11.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6111111111111112,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.05555555555555555,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrCo6O11
###Observation of Devil's Staircase in the Novel Spin Valve System SrCo$_6$O$_{11}$|T. Matsuda,S. Partzsch,T. Tsuyama,E. Schierle,E. Weschke,J. Geck,T. Saito,S. Ishiwata,Y. Tokura,H. Wadati###
(188371, 188375)
 Using resonant soft x<missing VAR>-ray scattering as a function of both temperature andmagnetic field, we reveal a large number of almost degenerate magnetic ordersin SrCo6O11.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6111111111111112,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.05555555555555555,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrCo6O11
###Observation of Devil's Staircase in the Novel Spin Valve System SrCo$_6$O$_{11}$|T. Matsuda,S. Partzsch,T. Tsuyama,E. Schierle,E. Weschke,J. Geck,T. Saito,S. Ishiwata,Y. Tokura,H. Wadati###
(188460, 188464)
 It is demonstrated how a magnetic fieldinduces transitions between different microscopic spin configurations, which isresponsible for the magnetoresistance of SrCo6O11.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6111111111111112,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.05555555555555555,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin Hall magnetoresistance and spin Nernst magnetothermopower: role of the inverse spin galvanic effect|Sebastian Tölle,Michael Dzierzawa,Ulrich Eckern,Cosimo Gorini###
(188555, 188555)
 In ferromagnet/normal-metal bilayers, the sensitivity of the spin Hallmagnetoresistance and the spin Nernst magnetothermopower to the boundaryconditions at the interface is of central importance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin Hall magnetoresistance and spin Nernst magnetothermopower: role of the inverse spin galvanic effect|Sebastian Tölle,Michael Dzierzawa,Ulrich Eckern,Cosimo Gorini###
(188615, 188615)
 In general, such boundaryconditions can be substantially affected by current-induced spin polarizations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin Hall magnetoresistance and spin Nernst magnetothermopower: role of the inverse spin galvanic effect|Sebastian Tölle,Michael Dzierzawa,Ulrich Eckern,Cosimo Gorini###
(188647, 188647)
In order to quantify the role of the latter, we consider a Rashbatwo-dimensional electron gas with a ferromagnet attached to one side of thesystem.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Biaxial magnetic field setup for angular magnetic measurements of thin films and spintronic nanodevices|Piotr Rzeszut,Witold Skowroński,Sławomir Ziętek,Piotr Ogrodnik,Tomasz Stobiecki###
(188930, 188930)
 In addition, the probe station is equipped with amicrowave circuitry, which enables angle-resolved spin torque oscillationmeasurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

InGaAs/InAlAs
###Classical effects in the weak-field magnetoresistance of InGaAs/InAlAs quantum wells|M. Yu. Melnikov,A. A. Shashkin,V. T. Dolgopolov,G. Biasiol,S. Roddaro,L. Sorba###
(189085, 189091)
Classical effects in the weak-field magnetoresistance of InGaAs/InAlAs quantum wells.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

InGaAs/InAlAs
###Classical effects in the weak-field magnetoresistance of InGaAs/InAlAs quantum wells|M. Yu. Melnikov,A. A. Shashkin,V. T. Dolgopolov,G. Biasiol,S. Roddaro,L. Sorba###
(189137, 189143)
 We observe an unusual behavior of the low-temperature magnetoresistance ofthe high-mobility two-dimensional electron gas in InGaAs/InAlAs quantum wellsin weak perpendicular magnetic fields.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Ga
###Electronic phase separation in insulating (Ga,Mn)As with low compensation: Super-paramagnetism and hopping conduction|Ye Yuan,Mao Wang,Chi Xu,René Hübner,Roman Böttger,Rafal Jakiela,Manfred Helm,Maciej Sawicki,Shengqiang Zhou###
(189316, 189316)
Electronic phase separation in insulating (Ga,Mn)As with low compensation Super-paramagnetism and hopping conduction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 0.7, '%', 1]

Mn
###Electronic phase separation in insulating (Ga,Mn)As with low compensation: Super-paramagnetism and hopping conduction|Ye Yuan,Mao Wang,Chi Xu,René Hübner,Roman Böttger,Rafal Jakiela,Manfred Helm,Maciej Sawicki,Shengqiang Zhou###
(189318, 189318)
Electronic phase separation in insulating (Ga,Mn)As with low compensation Super-paramagnetism and hopping conduction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 0.7, '%', 1]

As
###Electronic phase separation in insulating (Ga,Mn)As with low compensation: Super-paramagnetism and hopping conduction|Ye Yuan,Mao Wang,Chi Xu,René Hübner,Roman Böttger,Rafal Jakiela,Manfred Helm,Maciej Sawicki,Shengqiang Zhou###
(189320, 189320)
Electronic phase separation in insulating (Ga,Mn)As with low compensation Super-paramagnetism and hopping conduction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 0.7, '%', 1]

In
###Electronic phase separation in insulating (Ga,Mn)As with low compensation: Super-paramagnetism and hopping conduction|Ye Yuan,Mao Wang,Chi Xu,René Hübner,Roman Böttger,Rafal Jakiela,Manfred Helm,Maciej Sawicki,Shengqiang Zhou###
(189339, 189339)
 In the present work, low compensated insulating (Ga,Mn)As with 0.7% Mn isobtained by ion implantation combined with pulsed laser melting.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 0.7, '%', 0]

Ga
###Electronic phase separation in insulating (Ga,Mn)As with low compensation: Super-paramagnetism and hopping conduction|Ye Yuan,Mao Wang,Chi Xu,René Hübner,Roman Böttger,Rafal Jakiela,Manfred Helm,Maciej Sawicki,Shengqiang Zhou###
(189355, 189355)
 In the present work, low compensated insulating (Ga,Mn)As with 0.7% Mn isobtained by ion implantation combined with pulsed laser melting.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 0.7, '%', 0]

Mn
###Electronic phase separation in insulating (Ga,Mn)As with low compensation: Super-paramagnetism and hopping conduction|Ye Yuan,Mao Wang,Chi Xu,René Hübner,Roman Böttger,Rafal Jakiela,Manfred Helm,Maciej Sawicki,Shengqiang Zhou###
(189357, 189357)
 In the present work, low compensated insulating (Ga,Mn)As with 0.7% Mn isobtained by ion implantation combined with pulsed laser melting.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 0.7, '%', 0]

As
###Electronic phase separation in insulating (Ga,Mn)As with low compensation: Super-paramagnetism and hopping conduction|Ye Yuan,Mao Wang,Chi Xu,René Hübner,Roman Böttger,Rafal Jakiela,Manfred Helm,Maciej Sawicki,Shengqiang Zhou###
(189359, 189359)
 In the present work, low compensated insulating (Ga,Mn)As with 0.7% Mn isobtained by ion implantation combined with pulsed laser melting.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 0.7, '%', 0]

Mn
###Electronic phase separation in insulating (Ga,Mn)As with low compensation: Super-paramagnetism and hopping conduction|Ye Yuan,Mao Wang,Chi Xu,René Hübner,Roman Böttger,Rafal Jakiela,Manfred Helm,Maciej Sawicki,Shengqiang Zhou###
(189366, 189366)
 In the present work, low compensated insulating (Ga,Mn)As with 0.7% Mn isobtained by ion implantation combined with pulsed laser melting.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 0.7, '%', 0]

Ga
###Electronic phase separation in insulating (Ga,Mn)As with low compensation: Super-paramagnetism and hopping conduction|Ye Yuan,Mao Wang,Chi Xu,René Hübner,Roman Böttger,Rafal Jakiela,Manfred Helm,Maciej Sawicki,Shengqiang Zhou###
(189526, 189526)
 Our studies confirm that the disorder-inducedelectronic phase separation occurs in (Ga,Mn)As samples with a Mn concentrationin the insulator-metal transition regime, and it can account for the observedsuperparamagnetism and the colossal magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 0.7, '%', 4]

Mn
###Electronic phase separation in insulating (Ga,Mn)As with low compensation: Super-paramagnetism and hopping conduction|Ye Yuan,Mao Wang,Chi Xu,René Hübner,Roman Böttger,Rafal Jakiela,Manfred Helm,Maciej Sawicki,Shengqiang Zhou###
(189528, 189528)
 Our studies confirm that the disorder-inducedelectronic phase separation occurs in (Ga,Mn)As samples with a Mn concentrationin the insulator-metal transition regime, and it can account for the observedsuperparamagnetism and the colossal magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 0.7, '%', 4]

As
###Electronic phase separation in insulating (Ga,Mn)As with low compensation: Super-paramagnetism and hopping conduction|Ye Yuan,Mao Wang,Chi Xu,René Hübner,Roman Böttger,Rafal Jakiela,Manfred Helm,Maciej Sawicki,Shengqiang Zhou###
(189530, 189530)
 Our studies confirm that the disorder-inducedelectronic phase separation occurs in (Ga,Mn)As samples with a Mn concentrationin the insulator-metal transition regime, and it can account for the observedsuperparamagnetism and the colossal magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 0.7, '%', 4]

Mn
###Electronic phase separation in insulating (Ga,Mn)As with low compensation: Super-paramagnetism and hopping conduction|Ye Yuan,Mao Wang,Chi Xu,René Hübner,Roman Böttger,Rafal Jakiela,Manfred Helm,Maciej Sawicki,Shengqiang Zhou###
(189538, 189538)
 Our studies confirm that the disorder-inducedelectronic phase separation occurs in (Ga,Mn)As samples with a Mn concentrationin the insulator-metal transition regime, and it can account for the observedsuperparamagnetism and the colossal magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 0.7, '%', 4]

YTiO3
###Emergent antiferromagnetism of YTiO3 in YTiO3-CaTiO3 superlattices|P. Pal,X. Liu,M. Kareev,D. Choudhury,J. Chakhalian###
(189596, 189599)
Emergent antiferromagnetism of YTiO3 in YTiO3-CaTiO3 superlattices.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YTiO3
###Emergent antiferromagnetism of YTiO3 in YTiO3-CaTiO3 superlattices|P. Pal,X. Liu,M. Kareev,D. Choudhury,J. Chakhalian###
(189603, 189606)
Emergent antiferromagnetism of YTiO3 in YTiO3-CaTiO3 superlattices.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CaTiO3
###Emergent antiferromagnetism of YTiO3 in YTiO3-CaTiO3 superlattices|P. Pal,X. Liu,M. Kareev,D. Choudhury,J. Chakhalian###
(189608, 189611)
Emergent antiferromagnetism of YTiO3 in YTiO3-CaTiO3 superlattices.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YTiO3
###Emergent antiferromagnetism of YTiO3 in YTiO3-CaTiO3 superlattices|P. Pal,X. Liu,M. Kareev,D. Choudhury,J. Chakhalian###
(189640, 189643)
 Transport and magnetoresistance measurements are performed on metallic,high-carrier density YTiO3-CaTiO3 superlattices as a probe towards theinvestigation of an emergent magnetic order of YTiO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CaTiO3
###Emergent antiferromagnetism of YTiO3 in YTiO3-CaTiO3 superlattices|P. Pal,X. Liu,M. Kareev,D. Choudhury,J. Chakhalian###
(189645, 189648)
 Transport and magnetoresistance measurements are performed on metallic,high-carrier density YTiO3-CaTiO3 superlattices as a probe towards theinvestigation of an emergent magnetic order of YTiO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YTiO3
###Emergent antiferromagnetism of YTiO3 in YTiO3-CaTiO3 superlattices|P. Pal,X. Liu,M. Kareev,D. Choudhury,J. Chakhalian###
(189677, 189680)
 Transport and magnetoresistance measurements are performed on metallic,high-carrier density YTiO3-CaTiO3 superlattices as a probe towards theinvestigation of an emergent magnetic order of YTiO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YTiO3
###Emergent antiferromagnetism of YTiO3 in YTiO3-CaTiO3 superlattices|P. Pal,X. Liu,M. Kareev,D. Choudhury,J. Chakhalian###
(189694, 189697)
 On varying the thicknessof YTiO3 while keeping the CaTiO3 layer thickness constant in thesuperlattices, a low-temperature upturn in sheet-resistance, a non-Fermiliquid-like charge transport and positive magnetoresistance are observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CaTiO3
###Emergent antiferromagnetism of YTiO3 in YTiO3-CaTiO3 superlattices|P. Pal,X. Liu,M. Kareev,D. Choudhury,J. Chakhalian###
(189705, 189708)
 On varying the thicknessof YTiO3 while keeping the CaTiO3 layer thickness constant in thesuperlattices, a low-temperature upturn in sheet-resistance, a non-Fermiliquid-like charge transport and positive magnetoresistance are observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YTiO3
###Emergent antiferromagnetism of YTiO3 in YTiO3-CaTiO3 superlattices|P. Pal,X. Liu,M. Kareev,D. Choudhury,J. Chakhalian###
(189810, 189813)
Analyses of the origin of such effects suggest that a unique antiferromagneticorder is realized in the ultra-thin, epitaxially strained YTiO3 layers, whichcorroborates well with some recent theoretical predictions in this regard.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Spin Relaxation in Weak Localization Regime in Multilayer Graphene Spin Valves|Takehiro Yamaguchi,Rai Moriya,Satoru Masubuchi,Kazuyuki Iguchi,Tomoki Machida###
(189924, 189924)
 The temperature dependence of the spin relaxation time in multilayer graphene(MLG) spin valve devices was measured using a non-local magnetoresistance(NLMR) measurement.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 70, 'K', 1]

W
###Spin Relaxation in Weak Localization Regime in Multilayer Graphene Spin Valves|Takehiro Yamaguchi,Rai Moriya,Satoru Masubuchi,Kazuyuki Iguchi,Tomoki Machida###
(189940, 189940)
 A weak localization (WL) was observed frommagnetoresistance (MR) measurements below 70 K, suggesting coherent transportof the charge carriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 70, 'K', 0]

Ds
###Spin Relaxation in Weak Localization Regime in Multilayer Graphene Spin Valves|Takehiro Yamaguchi,Rai Moriya,Satoru Masubuchi,Kazuyuki Iguchi,Tomoki Machida###
(190031, 190031)
 Within the same temperature range, we observed a largeincrease in the spin relaxation time and spin diffusion length even though thediffusion constant Ds was suppressed by the WL<missing VAR>.
EXCEPTION 3: IndexError for Ds
W
[70.0, 70, 'K', 1]

Bi2Te2Se
###Indications of the topological transport by the universal conductance fluctuations in the Bi2Te2Se microflakes|Zhaoguo Li,Yuze Meng,Jian Pan,Taishi Chen,Xiaochen Hong,Shiyan Li,Xuefeng Wang,Fengqi Song,Baigeng Wang###
(190135, 190139)
Indications of the topological transport by the universal conductance fluctuations in the Bi2Te2Se microflakes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 0.37, 'e', 4]

UC
###Indications of the topological transport by the universal conductance fluctuations in the Bi2Te2Se microflakes|Zhaoguo Li,Yuze Meng,Jian Pan,Taishi Chen,Xiaochen Hong,Shiyan Li,Xuefeng Wang,Fengqi Song,Baigeng Wang###
(190151, 190152)
 Universal conductance fluctuations (UCFs) are extracted in themagnetoresistance responses in the bulk-insulating Bi2Te2Se microflakes.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
[166.0, 0.37, 'e', 3]

Bi2Te2Se
###Indications of the topological transport by the universal conductance fluctuations in the Bi2Te2Se microflakes|Zhaoguo Li,Yuze Meng,Jian Pan,Taishi Chen,Xiaochen Hong,Shiyan Li,Xuefeng Wang,Fengqi Song,Baigeng Wang###
(190177, 190181)
 Universal conductance fluctuations (UCFs) are extracted in themagnetoresistance responses in the bulk-insulating Bi2Te2Se microflakes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 0.37, 'e', 3]

UCF
###Indications of the topological transport by the universal conductance fluctuations in the Bi2Te2Se microflakes|Zhaoguo Li,Yuze Meng,Jian Pan,Taishi Chen,Xiaochen Hong,Shiyan Li,Xuefeng Wang,Fengqi Song,Baigeng Wang###
(190240, 190242)
 Its origin from the surface electrons isdetermined by the fact that the UCF amplitudes keep unchanged while applying anin-plane field to suppress the coherence of bulk electrons.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[76.0, 0.37, 'e', 1]

UCF
###Indications of the topological transport by the universal conductance fluctuations in the Bi2Te2Se microflakes|Zhaoguo Li,Yuze Meng,Jian Pan,Taishi Chen,Xiaochen Hong,Shiyan Li,Xuefeng Wang,Fengqi Song,Baigeng Wang###
(190308, 190310)
 After consideringthe ensemble average in a batch of micrometer-sized samples, the intrinsic UCFmagnitudes of over 0.37 e2/h<missing VAR> is obtained.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[8.0, 0.37, 'e', 0]

UCF
###Indications of the topological transport by the universal conductance fluctuations in the Bi2Te2Se microflakes|Zhaoguo Li,Yuze Meng,Jian Pan,Taishi Chen,Xiaochen Hong,Shiyan Li,Xuefeng Wang,Fengqi Song,Baigeng Wang###
(190371, 190373)
 All the evidence point to thesuccessful observation of the UCF of topological surface states.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[53.0, 0.37, 'e', 2]

UCoGe
###Angular variation of the magnetoresistance of the superconducting ferromagnet UCoGe|T. V. Bay,A. M. Nikitin,T. Naka,A. McCollam,Y. K. Huang,A. de Visser###
(190410, 190412)
Angular variation of the magnetoresistance of the superconducting ferromagnet UCoGe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

UCoGe
###Angular variation of the magnetoresistance of the superconducting ferromagnet UCoGe|T. V. Bay,A. M. Nikitin,T. Naka,A. McCollam,Y. K. Huang,A. de Visser###
(190433, 190435)
 We report a magnetoresistance study of the superconducting ferromagnet UCoGe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Angular variation of the magnetoresistance of the superconducting ferromagnet UCoGe|T. V. Bay,A. M. Nikitin,T. Naka,A. McCollam,Y. K. Huang,A. de Visser###
(190466, 190466)
The data, taken on single-crystalline samples, show a pronounced structure atB  8.5T<missing VAR> for a field applied along the ordered moment m<missing VAR>0.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Angular variation of the magnetoresistance of the superconducting ferromagnet UCoGe|T. V. Bay,A. M. Nikitin,T. Naka,A. McCollam,Y. K. Huang,A. de Visser###
(190538, 190538)
 Magnetoresistance measurements under pressure show a rapid increaseof B to 12.8T<missing VAR> at 1.0G<missing VAR>Pa.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pa
###Angular variation of the magnetoresistance of the superconducting ferromagnet UCoGe|T. V. Bay,A. M. Nikitin,T. Naka,A. McCollam,Y. K. Huang,A. de Visser###
(190549, 190549)
 Magnetoresistance measurements under pressure show a rapid increaseof B to 12.8T<missing VAR> at 1.0G<missing VAR>Pa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Angular variation of the magnetoresistance of the superconducting ferromagnet UCoGe|T. V. Bay,A. M. Nikitin,T. Naka,A. McCollam,Y. K. Huang,A. de Visser###
(190556, 190556)
 We discuss B in terms of a field inducedpolarization change.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Angular variation of the magnetoresistance of the superconducting ferromagnet UCoGe|T. V. Bay,A. M. Nikitin,T. Naka,A. McCollam,Y. K. Huang,A. de Visser###
(190591, 190591)
 Upper critical field measurements corroborate the unusualS-shaped Bc<missing VAR>2(T)-curve for a field along the b<missing VAR>-axis of the orthorhombicunit cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Angular variation of the magnetoresistance of the superconducting ferromagnet UCoGe|T. V. Bay,A. M. Nikitin,T. Naka,A. McCollam,Y. K. Huang,A. de Visser###
(190595, 190595)
 Upper critical field measurements corroborate the unusualS-shaped Bc<missing VAR>2(T)-curve for a field along the b<missing VAR>-axis of the orthorhombicunit cell.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs/AlGaAs
###Exponential suppression of interlayer conductivity in very anisotropic quasi-two-dimensional compounds in high magnetic field|Pavel D. Grigoriev###
(191519, 191524)
The results obtained agree well with the experimental data in GaAs/AlGaAsheterostructures and in strongly anisotropic organic metals.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

U
###Microscopic theory of the magnetoresistance of disordered superconducting films|G. J. Conduit,Yigal Meir###
(191662, 191662)
 Starting from thedisordered negative-U Hubbard model, we employ an ab initio approach thatincludes thermal fluctuations to calculate the resistance, and fully reproducesthe experimental phenomenology.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Induced magneto-transport properties at palladium/yttrium iron garnet interface|Tao Lin,Chi Tang,Jing Shi###
(191885, 191885)
 As a thin layer of palladium (Pd) is directly deposited on an yttrium irongarnet or YIG<missing VAR> (Y3Fe5O12) magnetic insulator film, Pd develops both low- andhigh-field magneto-transport effects that are absent in standalone Pd or thickPd on YIG<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(Pd)
###Induced magneto-transport properties at palladium/yttrium iron garnet interface|Tao Lin,Chi Tang,Jing Shi###
(191897, 191899)
 As a thin layer of palladium (Pd) is directly deposited on an yttrium irongarnet or YIG<missing VAR> (Y3Fe5O12) magnetic insulator film, Pd develops both low- andhigh-field magneto-transport effects that are absent in standalone Pd or thickPd on YIG<missing VAR>.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YI
###Induced magneto-transport properties at palladium/yttrium iron garnet interface|Tao Lin,Chi Tang,Jing Shi###
(191920, 191921)
 As a thin layer of palladium (Pd) is directly deposited on an yttrium irongarnet or YIG<missing VAR> (Y3Fe5O12) magnetic insulator film, Pd develops both low- andhigh-field magneto-transport effects that are absent in standalone Pd or thickPd on YIG<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(Y3Fe5O12)
###Induced magneto-transport properties at palladium/yttrium iron garnet interface|Tao Lin,Chi Tang,Jing Shi###
(191924, 191931)
 As a thin layer of palladium (Pd) is directly deposited on an yttrium irongarnet or YIG<missing VAR> (Y3Fe5O12) magnetic insulator film, Pd develops both low- andhigh-field magneto-transport effects that are absent in standalone Pd or thickPd on YIG<missing VAR>.
Featurization successful!
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pd
###Induced magneto-transport properties at palladium/yttrium iron garnet interface|Tao Lin,Chi Tang,Jing Shi###
(191940, 191940)
 As a thin layer of palladium (Pd) is directly deposited on an yttrium irongarnet or YIG<missing VAR> (Y3Fe5O12) magnetic insulator film, Pd develops both low- andhigh-field magneto-transport effects that are absent in standalone Pd or thickPd on YIG<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pd
###Induced magneto-transport properties at palladium/yttrium iron garnet interface|Tao Lin,Chi Tang,Jing Shi###
(191972, 191972)
 As a thin layer of palladium (Pd) is directly deposited on an yttrium irongarnet or YIG<missing VAR> (Y3Fe5O12) magnetic insulator film, Pd develops both low- andhigh-field magneto-transport effects that are absent in standalone Pd or thickPd on YIG<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pd
###Induced magneto-transport properties at palladium/yttrium iron garnet interface|Tao Lin,Chi Tang,Jing Shi###
(191979, 191979)
 As a thin layer of palladium (Pd) is directly deposited on an yttrium irongarnet or YIG<missing VAR> (Y3Fe5O12) magnetic insulator film, Pd develops both low- andhigh-field magneto-transport effects that are absent in standalone Pd or thickPd on YIG<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YI
###Induced magneto-transport properties at palladium/yttrium iron garnet interface|Tao Lin,Chi Tang,Jing Shi###
(191983, 191984)
 As a thin layer of palladium (Pd) is directly deposited on an yttrium irongarnet or YIG<missing VAR> (Y3Fe5O12) magnetic insulator film, Pd develops both low- andhigh-field magneto-transport effects that are absent in standalone Pd or thickPd on YIG<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pd
###Induced magneto-transport properties at palladium/yttrium iron garnet interface|Tao Lin,Chi Tang,Jing Shi###
(192002, 192002)
 While the low-field magnetoresistance peak of Pd tracks the coercivefield of the YIG<missing VAR> film, the much larger high-field magnetoresistance and theHall effect do not show any obvious relationship with the bulk YIG<missing VAR>magnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YI
###Induced magneto-transport properties at palladium/yttrium iron garnet interface|Tao Lin,Chi Tang,Jing Shi###
(192017, 192018)
 While the low-field magnetoresistance peak of Pd tracks the coercivefield of the YIG<missing VAR> film, the much larger high-field magnetoresistance and theHall effect do not show any obvious relationship with the bulk YIG<missing VAR>magnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YI
###Induced magneto-transport properties at palladium/yttrium iron garnet interface|Tao Lin,Chi Tang,Jing Shi###
(192063, 192064)
 While the low-field magnetoresistance peak of Pd tracks the coercivefield of the YIG<missing VAR> film, the much larger high-field magnetoresistance and theHall effect do not show any obvious relationship with the bulk YIG<missing VAR>magnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pd
###Induced magneto-transport properties at palladium/yttrium iron garnet interface|Tao Lin,Chi Tang,Jing Shi###
(192087, 192087)
 The distinct high-field magneto-transport effects in Pd areshown to be caused by interfacial local moments in Pd.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pd
###Induced magneto-transport properties at palladium/yttrium iron garnet interface|Tao Lin,Chi Tang,Jing Shi###
(192110, 192110)
 The distinct high-field magneto-transport effects in Pd areshown to be caused by interfacial local moments in Pd.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(F1)
###Giant magnetoresistance in the junction of two ferromagnets on the surface of diffusive topological insulators|Katsuhisa Taguchi,Takehito Yokoyama,Yukio Tanaka###
(192181, 192184)
 We reveal the giant magnetoresistance induced by the spin-polarized currentin the ferromagnet (F1)/topological insulator (T<missing VAR>I)/ferromagnet (F2) junction,where two ferromagnets are deposited on the diffusive surface of the T<missing VAR>I.
Featurization successful!
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Giant magnetoresistance in the junction of two ferromagnets on the surface of diffusive topological insulators|Katsuhisa Taguchi,Takehito Yokoyama,Yukio Tanaka###
(192192, 192192)
 We reveal the giant magnetoresistance induced by the spin-polarized currentin the ferromagnet (F1)/topological insulator (T<missing VAR>I)/ferromagnet (F2) junction,where two ferromagnets are deposited on the diffusive surface of the T<missing VAR>I.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(F2)
###Giant magnetoresistance in the junction of two ferromagnets on the surface of diffusive topological insulators|Katsuhisa Taguchi,Takehito Yokoyama,Yukio Tanaka###
(192197, 192200)
 We reveal the giant magnetoresistance induced by the spin-polarized currentin the ferromagnet (F1)/topological insulator (T<missing VAR>I)/ferromagnet (F2) junction,where two ferromagnets are deposited on the diffusive surface of the T<missing VAR>I.
Featurization successful!
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Giant magnetoresistance in the junction of two ferromagnets on the surface of diffusive topological insulators|Katsuhisa Taguchi,Takehito Yokoyama,Yukio Tanaka###
(192229, 192229)
 We reveal the giant magnetoresistance induced by the spin-polarized currentin the ferromagnet (F1)/topological insulator (T<missing VAR>I)/ferromagnet (F2) junction,where two ferromagnets are deposited on the diffusive surface of the T<missing VAR>I.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Giant magnetoresistance in the junction of two ferromagnets on the surface of diffusive topological insulators|Katsuhisa Taguchi,Takehito Yokoyama,Yukio Tanaka###
(192341, 192341)
 The property is intuitively understood by the non-equilibriumspin-polarized current, which plays the role of an effective electrochemicalpotential on the surface of the T<missing VAR>I.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaAlO3/SrTiO3
###Six-fold crystalline anisotropic magnetoresistance in the (111) LaAlO$_3$/SrTiO$_3$ oxide interface|P. K. Rout,I. Agireen,E. Maniv,M. Goldstein,Y. Dagan###
(192849, 192857)
Six-fold crystalline anisotropic magnetoresistance in the (111) LaAlO3/SrTiO3 oxide interface.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[18.0, 2, 'D', 1],[141.0, 15, '%', 3]

LaAlO3/SrTiO3
###Six-fold crystalline anisotropic magnetoresistance in the (111) LaAlO$_3$/SrTiO$_3$ oxide interface|P. K. Rout,I. Agireen,E. Maniv,M. Goldstein,Y. Dagan###
(192892, 192900)
 We measured the magnetoresistance of the 2D electron liquid formed at the(111) LaAlO3/SrTiO3 interface.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[17.0, 2, 'D', 0],[98.0, 15, '%', 2]

ThCr2Si2
###Magnetic and magnetotransport properties of ThCr2Si2-type Ce2O2Bi composed of conducting Bi2- square net and magnetic Ce-O layer|Shunsuke Shibata,Ryosuke Sei,Tomoteru Fukumura,Tetsuya Hasegawa###
(193108, 193112)
Magnetic and magnetotransport properties of ThCr2Si2-type Ce2O2Bi composed of conducting Bi2- square net and magnetic Ce-O layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 10, 'K', 3]

Ce2O2Bi
###Magnetic and magnetotransport properties of ThCr2Si2-type Ce2O2Bi composed of conducting Bi2- square net and magnetic Ce-O layer|Shunsuke Shibata,Ryosuke Sei,Tomoteru Fukumura,Tetsuya Hasegawa###
(193116, 193120)
Magnetic and magnetotransport properties of ThCr2Si2-type Ce2O2Bi composed of conducting Bi2- square net and magnetic Ce-O layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 10, 'K', 3]

Bi2
###Magnetic and magnetotransport properties of ThCr2Si2-type Ce2O2Bi composed of conducting Bi2- square net and magnetic Ce-O layer|Shunsuke Shibata,Ryosuke Sei,Tomoteru Fukumura,Tetsuya Hasegawa###
(193128, 193129)
Magnetic and magnetotransport properties of ThCr2Si2-type Ce2O2Bi composed of conducting Bi2- square net and magnetic Ce-O layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 10, 'K', 3]

Ce
###Magnetic and magnetotransport properties of ThCr2Si2-type Ce2O2Bi composed of conducting Bi2- square net and magnetic Ce-O layer|Shunsuke Shibata,Ryosuke Sei,Tomoteru Fukumura,Tetsuya Hasegawa###
(193140, 193140)
Magnetic and magnetotransport properties of ThCr2Si2-type Ce2O2Bi composed of conducting Bi2- square net and magnetic Ce-O layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 10, 'K', 3]

O
###Magnetic and magnetotransport properties of ThCr2Si2-type Ce2O2Bi composed of conducting Bi2- square net and magnetic Ce-O layer|Shunsuke Shibata,Ryosuke Sei,Tomoteru Fukumura,Tetsuya Hasegawa###
(193142, 193142)
Magnetic and magnetotransport properties of ThCr2Si2-type Ce2O2Bi composed of conducting Bi2- square net and magnetic Ce-O layer.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 10, 'K', 3]

ThCr2Si2
###Magnetic and magnetotransport properties of ThCr2Si2-type Ce2O2Bi composed of conducting Bi2- square net and magnetic Ce-O layer|Shunsuke Shibata,Ryosuke Sei,Tomoteru Fukumura,Tetsuya Hasegawa###
(193147, 193151)
 ThCr2Si2-type Ce2O2Bi epitaxial thin films were grown by recently developedmultilayer solid phase epitaxy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 10, 'K', 2]

Ce2O2Bi
###Magnetic and magnetotransport properties of ThCr2Si2-type Ce2O2Bi composed of conducting Bi2- square net and magnetic Ce-O layer|Shunsuke Shibata,Ryosuke Sei,Tomoteru Fukumura,Tetsuya Hasegawa###
(193155, 193159)
 ThCr2Si2-type Ce2O2Bi epitaxial thin films were grown by recently developedmultilayer solid phase epitaxy.
Featurization terminated normally.
0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 10, 'K', 2]

Ce
###Magnetic and magnetotransport properties of ThCr2Si2-type Ce2O2Bi composed of conducting Bi2- square net and magnetic Ce-O layer|Shunsuke Shibata,Ryosuke Sei,Tomoteru Fukumura,Tetsuya Hasegawa###
(193195, 193195)
 The ionic state of Ce was confirmed to be 3 byx<missing VAR>-ray photoelectron spectroscopy, corresponding to the electronic configurationof [Xe]4f<missing VAR>1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 10, 'K', 1]

SiGe/Si/SiGe
###Unusual anisotropy of inplane field magnetoresistance in ultra-high mobility SiGe/Si/SiGe quantum wells|M. Yu. Melnikov,V. T. Dolgopolov,A. A. Shashkin,S. -H. Huang,C. W. Liu,S. V. Kravchenko###
(193430, 193436)
Unusual anisotropy of inplane field magnetoresistance in ultra-high mobility SiGe/Si/SiGe quantum wells.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

SiGe/Si/SiGe
###Unusual anisotropy of inplane field magnetoresistance in ultra-high mobility SiGe/Si/SiGe quantum wells|M. Yu. Melnikov,V. T. Dolgopolov,A. A. Shashkin,S. -H. Huang,C. W. Liu,S. V. Kravchenko###
(193472, 193478)
 We find an unusual anisotropy of the inplane field magnetoresistance inultra-high mobility SiGe/Si/SiGe quantum wells.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

B
###Unusual anisotropy of inplane field magnetoresistance in ultra-high mobility SiGe/Si/SiGe quantum wells|M. Yu. Melnikov,V. T. Dolgopolov,A. A. Shashkin,S. -H. Huang,C. W. Liu,S. V. Kravchenko###
(193507, 193507)
 The anisotropy depends on theorientation between the inplane field, Bparallel, and current, I,relative to the crystallographic axes of the sample and is a consequence of theintrinsic ridges on the quantum well surface.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Unusual anisotropy of inplane field magnetoresistance in ultra-high mobility SiGe/Si/SiGe quantum wells|M. Yu. Melnikov,V. T. Dolgopolov,A. A. Shashkin,S. -H. Huang,C. W. Liu,S. V. Kravchenko###
(193516, 193516)
 The anisotropy depends on theorientation between the inplane field, Bparallel, and current, I,relative to the crystallographic axes of the sample and is a consequence of theintrinsic ridges on the quantum well surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Unusual anisotropy of inplane field magnetoresistance in ultra-high mobility SiGe/Si/SiGe quantum wells|M. Yu. Melnikov,V. T. Dolgopolov,A. A. Shashkin,S. -H. Huang,C. W. Liu,S. V. Kravchenko###
(193601, 193601)
 For the simplest orientationsbetween current and crystallographic axes, a method of recalculating themagnetoresistance measured at Iperp Bparallel into the one measured atIparallel Bparallel is suggested and is shown to yield results that agreewith the experiment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Unusual anisotropy of inplane field magnetoresistance in ultra-high mobility SiGe/Si/SiGe quantum wells|M. Yu. Melnikov,V. T. Dolgopolov,A. A. Shashkin,S. -H. Huang,C. W. Liu,S. V. Kravchenko###
(193604, 193604)
 For the simplest orientationsbetween current and crystallographic axes, a method of recalculating themagnetoresistance measured at Iperp Bparallel into the one measured atIparallel Bparallel is suggested and is shown to yield results that agreewith the experiment.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Unusual anisotropy of inplane field magnetoresistance in ultra-high mobility SiGe/Si/SiGe quantum wells|M. Yu. Melnikov,V. T. Dolgopolov,A. A. Shashkin,S. -H. Huang,C. W. Liu,S. V. Kravchenko###
(193618, 193618)
 For the simplest orientationsbetween current and crystallographic axes, a method of recalculating themagnetoresistance measured at Iperp Bparallel into the one measured atIparallel Bparallel is suggested and is shown to yield results that agreewith the experiment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Unusual anisotropy of inplane field magnetoresistance in ultra-high mobility SiGe/Si/SiGe quantum wells|M. Yu. Melnikov,V. T. Dolgopolov,A. A. Shashkin,S. -H. Huang,C. W. Liu,S. V. Kravchenko###
(193621, 193621)
 For the simplest orientationsbetween current and crystallographic axes, a method of recalculating themagnetoresistance measured at Iperp Bparallel into the one measured atIparallel Bparallel is suggested and is shown to yield results that agreewith the experiment.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbTe2
###Quantum linear magnetoresistance in NbTe2|Hongxiang Chen,Zhilin Li,Xiao Fan,Liwei Guo,Xiaolong Chen###
(193668, 193670)
Quantum linear magnetoresistance in NbTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 30, '%', 3],[92.0, 3, 'K', 3],[95.0, 9, 'T', 3]

NbTe2
###Quantum linear magnetoresistance in NbTe2|Hongxiang Chen,Zhilin Li,Xiao Fan,Liwei Guo,Xiaolong Chen###
(193673, 193675)
 NbTe2 crystal is quasi-2D<missing VAR> layered semimetal with charge density wave groundstate showing a distorted-1T<missing VAR> structure at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 30, '%', 2],[87.0, 3, 'K', 2],[90.0, 9, 'T', 2]

NbTe2
###Quantum linear magnetoresistance in NbTe2|Hongxiang Chen,Zhilin Li,Xiao Fan,Liwei Guo,Xiaolong Chen###
(193740, 193742)
 Here we report theanisotropic magneto-transport properties of NbTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 30, '%', 1],[20.0, 3, 'K', 1],[23.0, 9, 'T', 1]

NbTe2
###Quantum linear magnetoresistance in NbTe2|Hongxiang Chen,Zhilin Li,Xiao Fan,Liwei Guo,Xiaolong Chen###
(193837, 193839)
 Our results reveal that alarge quasi-2D<missing VAR> Fermi surface and small Fermi pockets with linearly dispersivebands coexist in NbTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 30, '%', 1],[75.0, 3, 'K', 1],[72.0, 9, 'T', 1]

TaTe2
###Quantum linear magnetoresistance in NbTe2|Hongxiang Chen,Zhilin Li,Xiao Fan,Liwei Guo,Xiaolong Chen###
(193854, 193856)
 The comparison with the isostructural material TaTe2provides more information about the electronic structure evolution with chargedensity wave transitions in NbTe2 and TaTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 30, '%', 2],[92.0, 3, 'K', 2],[89.0, 9, 'T', 2]

NbTe2
###Quantum linear magnetoresistance in NbTe2|Hongxiang Chen,Zhilin Li,Xiao Fan,Liwei Guo,Xiaolong Chen###
(193888, 193890)
 The comparison with the isostructural material TaTe2provides more information about the electronic structure evolution with chargedensity wave transitions in NbTe2 and TaTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 30, '%', 2],[126.0, 3, 'K', 2],[123.0, 9, 'T', 2]

TaTe2
###Quantum linear magnetoresistance in NbTe2|Hongxiang Chen,Zhilin Li,Xiao Fan,Liwei Guo,Xiaolong Chen###
(193894, 193896)
 The comparison with the isostructural material TaTe2provides more information about the electronic structure evolution with chargedensity wave transitions in NbTe2 and TaTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 30, '%', 2],[132.0, 3, 'K', 2],[129.0, 9, 'T', 2]

Co
###Spin-Hall and Anisotropic Magnetoresistance in Ferrimagnetic Co-Gd / Pt layers|W. Zhou,T. Seki,T. Kubota,G. E. W. Bauer,K. Takanashi###
(193921, 193921)
Spin-Hall and Anisotropic Magnetoresistance in Ferrimagnetic Co-Gd / Pt layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 24.0, 'The', 3]

Gd
###Spin-Hall and Anisotropic Magnetoresistance in Ferrimagnetic Co-Gd / Pt layers|W. Zhou,T. Seki,T. Kubota,G. E. W. Bauer,K. Takanashi###
(193923, 193923)
Spin-Hall and Anisotropic Magnetoresistance in Ferrimagnetic Co-Gd / Pt layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 24.0, 'The', 3]

Pt
###Spin-Hall and Anisotropic Magnetoresistance in Ferrimagnetic Co-Gd / Pt layers|W. Zhou,T. Seki,T. Kubota,G. E. W. Bauer,K. Takanashi###
(193927, 193927)
Spin-Hall and Anisotropic Magnetoresistance in Ferrimagnetic Co-Gd / Pt layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 24.0, 'The', 3]

Co
###Spin-Hall and Anisotropic Magnetoresistance in Ferrimagnetic Co-Gd / Pt layers|W. Zhou,T. Seki,T. Kubota,G. E. W. Bauer,K. Takanashi###
(193938, 193938)
 We present the Co-Gd composition dependence of the spin-Hallmagnetoresistance (SMR) and anisotropic magnetoresistance (AMR) forferrimagnetic Co100-xGdx / Pt bilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 24.0, 'The', 2]

Gd
###Spin-Hall and Anisotropic Magnetoresistance in Ferrimagnetic Co-Gd / Pt layers|W. Zhou,T. Seki,T. Kubota,G. E. W. Bauer,K. Takanashi###
(193940, 193940)
 We present the Co-Gd composition dependence of the spin-Hallmagnetoresistance (SMR) and anisotropic magnetoresistance (AMR) forferrimagnetic Co100-xGdx / Pt bilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 24.0, 'The', 2]

S
###Spin-Hall and Anisotropic Magnetoresistance in Ferrimagnetic Co-Gd / Pt layers|W. Zhou,T. Seki,T. Kubota,G. E. W. Bauer,K. Takanashi###
(193958, 193958)
 We present the Co-Gd composition dependence of the spin-Hallmagnetoresistance (SMR) and anisotropic magnetoresistance (AMR) forferrimagnetic Co100-xGdx / Pt bilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 24.0, 'The', 2]

Co100-x
###Spin-Hall and Anisotropic Magnetoresistance in Ferrimagnetic Co-Gd / Pt layers|W. Zhou,T. Seki,T. Kubota,G. E. W. Bauer,K. Takanashi###
(193980, 193983)
 We present the Co-Gd composition dependence of the spin-Hallmagnetoresistance (SMR) and anisotropic magnetoresistance (AMR) forferrimagnetic Co100-xGdx / Pt bilayers.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[66.0, 24.0, 'The', 2]

Pt
###Spin-Hall and Anisotropic Magnetoresistance in Ferrimagnetic Co-Gd / Pt layers|W. Zhou,T. Seki,T. Kubota,G. E. W. Bauer,K. Takanashi###
(193988, 193988)
 We present the Co-Gd composition dependence of the spin-Hallmagnetoresistance (SMR) and anisotropic magnetoresistance (AMR) forferrimagnetic Co100-xGdx / Pt bilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 24.0, 'The', 2]

Gd
###Spin-Hall and Anisotropic Magnetoresistance in Ferrimagnetic Co-Gd / Pt layers|W. Zhou,T. Seki,T. Kubota,G. E. W. Bauer,K. Takanashi###
(193995, 193995)
 With Gd concentration x<missing VAR>, its magneticmoment increasingly competes with the Co moment in the net magnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 24.0, 'The', 1]

Co
###Spin-Hall and Anisotropic Magnetoresistance in Ferrimagnetic Co-Gd / Pt layers|W. Zhou,T. Seki,T. Kubota,G. E. W. Bauer,K. Takanashi###
(194017, 194017)
 With Gd concentration x<missing VAR>, its magneticmoment increasingly competes with the Co moment in the net magnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 24.0, 'The', 1]

S
###Spin-Hall and Anisotropic Magnetoresistance in Ferrimagnetic Co-Gd / Pt layers|W. Zhou,T. Seki,T. Kubota,G. E. W. Bauer,K. Takanashi###
(194098, 194098)
 On the other hand, the SMR does not vary significantly even wherethe AMR vanishes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 24.0, 'The', 1]

S
###Spin-Hall and Anisotropic Magnetoresistance in Ferrimagnetic Co-Gd / Pt layers|W. Zhou,T. Seki,T. Kubota,G. E. W. Bauer,K. Takanashi###
(194155, 194155)
 These experimental results indicate that very differentscattering mechanisms are responsible for AMR and SMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 24.0, 'The', 2]

I
###Magnetothermal cooling with a phase separated manganite|A. Rebello,R. Mahendiran###
(194475, 194475)
 We show that temperature of a current (I  20 mA) carrying manganite(Nd0.5Ca0.5Mn0.93Ni0.07O3) in presence of a magnetic field (H) decreasesabruptly as much as deltaT<missing VAR>  45 K (7 K) accompanied by a step like decrease inmagnetoresistance at a critical value of H when the base temperature is 40 K(100 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 20, 'mA', 0],[53.0, 45, 'K', 0],[99.0, 40, 'K', 0]

(Nd0.5Ca0.5Mn0.93Ni0.07O3)
###Magnetothermal cooling with a phase separated manganite|A. Rebello,R. Mahendiran###
(194485, 194496)
 We show that temperature of a current (I  20 mA) carrying manganite(Nd0.5Ca0.5Mn0.93Ni0.07O3) in presence of a magnetic field (H) decreasesabruptly as much as deltaT<missing VAR>  45 K (7 K) accompanied by a step like decrease inmagnetoresistance at a critical value of H when the base temperature is 40 K(100 K).
Featurization successful!
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0.186,0,0,0.014000000000000002,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 20, 'mA', 0],[32.0, 45, 'K', 0],[78.0, 40, 'K', 0]

(H)
###Magnetothermal cooling with a phase separated manganite|A. Rebello,R. Mahendiran###
(194510, 194512)
 We show that temperature of a current (I  20 mA) carrying manganite(Nd0.5Ca0.5Mn0.93Ni0.07O3) in presence of a magnetic field (H) decreasesabruptly as much as deltaT<missing VAR>  45 K (7 K) accompanied by a step like decrease inmagnetoresistance at a critical value of H when the base temperature is 40 K(100 K).
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 20, 'mA', 0],[16.0, 45, 'K', 0],[62.0, 40, 'K', 0]

K
###Magnetothermal cooling with a phase separated manganite|A. Rebello,R. Mahendiran###
(194533, 194533)
 We show that temperature of a current (I  20 mA) carrying manganite(Nd0.5Ca0.5Mn0.93Ni0.07O3) in presence of a magnetic field (H) decreasesabruptly as much as deltaT<missing VAR>  45 K (7 K) accompanied by a step like decrease inmagnetoresistance at a critical value of H when the base temperature is 40 K(100 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 20, 'mA', 0],[5.0, 45, 'K', 0],[41.0, 40, 'K', 0]

H
###Magnetothermal cooling with a phase separated manganite|A. Rebello,R. Mahendiran###
(194563, 194563)
 We show that temperature of a current (I  20 mA) carrying manganite(Nd0.5Ca0.5Mn0.93Ni0.07O3) in presence of a magnetic field (H) decreasesabruptly as much as deltaT<missing VAR>  45 K (7 K) accompanied by a step like decrease inmagnetoresistance at a critical value of H when the base temperature is 40 K(100 K).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 20, 'mA', 0],[35.0, 45, 'K', 0],[11.0, 40, 'K', 0]

K
###Magnetothermal cooling with a phase separated manganite|A. Rebello,R. Mahendiran###
(194580, 194580)
 We show that temperature of a current (I  20 mA) carrying manganite(Nd0.5Ca0.5Mn0.93Ni0.07O3) in presence of a magnetic field (H) decreasesabruptly as much as deltaT<missing VAR>  45 K (7 K) accompanied by a step like decrease inmagnetoresistance at a critical value of H when the base temperature is 40 K(100 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 20, 'mA', 0],[52.0, 45, 'K', 0],[6.0, 40, 'K', 0]

H
###Magnetothermal cooling with a phase separated manganite|A. Rebello,R. Mahendiran###
(194612, 194612)
 The magnitude of deltaT<missing VAR> and the position of magnetoresistance stepdecrease towards lower H with decreasing amplitude of the current.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 20, 'mA', 1],[84.0, 45, 'K', 1],[38.0, 40, 'K', 1]

Pt/CoFe2O4
###Spin Hall magnetoresistance at Pt/CoFe2O4 interfaces and texture effects|Miren Isasa,Amilcar Bedoya-Pinto,Saül Vélez,Federico Golmar,Florencio Sánchez,Luis E. Hueso,Josep Fontcuberta,Fèlix Casanova###
(194694, 194700)
Spin Hall magnetoresistance at Pt/CoFe2O4 interfaces and texture effects.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Pt
###Spin Hall magnetoresistance at Pt/CoFe2O4 interfaces and texture effects|Miren Isasa,Amilcar Bedoya-Pinto,Saül Vélez,Federico Golmar,Florencio Sánchez,Luis E. Hueso,Josep Fontcuberta,Fèlix Casanova###
(194723, 194723)
 We report magnetoresistance measurements on thin Pt bars grown on epitaxial(001) and (111) CoFe2O4 (CFO) ferrimagnetic insulating films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFe2O4
###Spin Hall magnetoresistance at Pt/CoFe2O4 interfaces and texture effects|Miren Isasa,Amilcar Bedoya-Pinto,Saül Vélez,Federico Golmar,Florencio Sánchez,Luis E. Hueso,Josep Fontcuberta,Fèlix Casanova###
(194744, 194748)
 We report magnetoresistance measurements on thin Pt bars grown on epitaxial(001) and (111) CoFe2O4 (CFO) ferrimagnetic insulating films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(CFO)
###Spin Hall magnetoresistance at Pt/CoFe2O4 interfaces and texture effects|Miren Isasa,Amilcar Bedoya-Pinto,Saül Vélez,Federico Golmar,Florencio Sánchez,Luis E. Hueso,Josep Fontcuberta,Fèlix Casanova###
(194750, 194754)
 We report magnetoresistance measurements on thin Pt bars grown on epitaxial(001) and (111) CoFe2O4 (CFO) ferrimagnetic insulating films.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin Hall magnetoresistance at Pt/CoFe2O4 interfaces and texture effects|Miren Isasa,Amilcar Bedoya-Pinto,Saül Vélez,Federico Golmar,Florencio Sánchez,Luis E. Hueso,Josep Fontcuberta,Fèlix Casanova###
(194794, 194794)
 The results canbe described in terms of the recently discovered spin Hall magnetoresistance(SMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin Hall magnetoresistance at Pt/CoFe2O4 interfaces and texture effects|Miren Isasa,Amilcar Bedoya-Pinto,Saül Vélez,Federico Golmar,Florencio Sánchez,Luis E. Hueso,Josep Fontcuberta,Fèlix Casanova###
(194808, 194808)
 The magnitude of the SMR depends on the interface preparationconditions, being optimal when Pt/CFO samples are prepared in situ, in a singleprocess.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt/CFO
###Spin Hall magnetoresistance at Pt/CoFe2O4 interfaces and texture effects|Miren Isasa,Amilcar Bedoya-Pinto,Saül Vélez,Federico Golmar,Florencio Sánchez,Luis E. Hueso,Josep Fontcuberta,Fèlix Casanova###
(194832, 194836)
 The magnitude of the SMR depends on the interface preparationconditions, being optimal when Pt/CFO samples are prepared in situ, in a singleprocess.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

S
###Spin Hall magnetoresistance at Pt/CoFe2O4 interfaces and texture effects|Miren Isasa,Amilcar Bedoya-Pinto,Saül Vélez,Federico Golmar,Florencio Sánchez,Luis E. Hueso,Josep Fontcuberta,Fèlix Casanova###
(194878, 194878)
 The spin-mixing interface conductance, the key parameter governing SMRand other relevant spin-dependent phenomena such as spin pumping or spinSeebeck effect, is found to be different depending on the crystallographicorientation of CFO, highlighting the role of the composition and density ofmagnetic ions at the interface on spin mixing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CFO
###Spin Hall magnetoresistance at Pt/CoFe2O4 interfaces and texture effects|Miren Isasa,Amilcar Bedoya-Pinto,Saül Vélez,Federico Golmar,Florencio Sánchez,Luis E. Hueso,Josep Fontcuberta,Fèlix Casanova###
(194936, 194938)
 The spin-mixing interface conductance, the key parameter governing SMRand other relevant spin-dependent phenomena such as spin pumping or spinSeebeck effect, is found to be different depending on the crystallographicorientation of CFO, highlighting the role of the composition and density ofmagnetic ions at the interface on spin mixing.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Temperature dependent spin transport properties of Platinum inferred from spin Hall magnetoresistance measurements|Sibylle Meyer,Matthias Althammer,Stephan Geprägs,Matthias Opel,Rudolf Gross,Sebastian T. B. Goennenwein###
(195033, 195033)
 We study the temperature dependence of the spin Hall magnetoresistance (SMR)in yttrium iron garnet/platinum hybrid structures via magnetization orientationdependent magnetoresistance measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 0.11, 'at', 2],[138.0, 0.075, 'at', 2],[139.0, 10, 'K', 2]

S
###Temperature dependent spin transport properties of Platinum inferred from spin Hall magnetoresistance measurements|Sibylle Meyer,Matthias Althammer,Stephan Geprägs,Matthias Opel,Rudolf Gross,Sebastian T. B. Goennenwein###
(195082, 195082)
 Our experiments show a decrease ofthe SMR magnitude with decreasing temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 0.11, 'at', 1],[89.0, 0.075, 'at', 1],[90.0, 10, 'K', 1]

S
###Temperature dependent spin transport properties of Platinum inferred from spin Hall magnetoresistance measurements|Sibylle Meyer,Matthias Althammer,Stephan Geprägs,Matthias Opel,Rudolf Gross,Sebastian T. B. Goennenwein###
(195105, 195105)
 Using the sensitivity of the SMRto the spin transport properties of the normal metal, we interpret our data interms of a decrease of the spin Hall angle in platinum from 0.11 at roomtemperature to 0.075 at 10K, while the spin diffusion length and the spinmixing conductance of the ferrimagnetic insulator/normal metal interface remainalmost constant.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 0.11, 'at', 0],[66.0, 0.075, 'at', 0],[67.0, 10, 'K', 0]

BaMnBi2
###Large linear magnetoresistance in a new Dirac material BaMnBi2|Yi-Yan Wang,Qiao-He Yu,Tian-Long Xia###
(195242, 195245)
Large linear magnetoresistance in a new Dirac material BaMnBi2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BaMnBi2
###Large linear magnetoresistance in a new Dirac material BaMnBi2|Yi-Yan Wang,Qiao-He Yu,Tian-Long Xia###
(195268, 195271)
 We report the synthesis of high quality single crystals of BaMnBi2 andinvestigate the transport properties of the samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Large linear magnetoresistance in a new Dirac material BaMnBi2|Yi-Yan Wang,Qiao-He Yu,Tian-Long Xia###
(195315, 195315)
 The Hall data revealselectron-type carriers and a mobility mu(5K) 1500cm2/Vs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CaMnBi2
###Large linear magnetoresistance in a new Dirac material BaMnBi2|Yi-Yan Wang,Qiao-He Yu,Tian-Long Xia###
(195348, 195351)
 The temperaturedependence of magnetization displays behavior that is different from CaMnBi2 orSrMnBi2 , which suggests the possible different magnetic structure of BaMnBi2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrMnBi2
###Large linear magnetoresistance in a new Dirac material BaMnBi2|Yi-Yan Wang,Qiao-He Yu,Tian-Long Xia###
(195356, 195359)
 The temperaturedependence of magnetization displays behavior that is different from CaMnBi2 orSrMnBi2 , which suggests the possible different magnetic structure of BaMnBi2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BaMnBi2
###Large linear magnetoresistance in a new Dirac material BaMnBi2|Yi-Yan Wang,Qiao-He Yu,Tian-Long Xia###
(195379, 195382)
 The temperaturedependence of magnetization displays behavior that is different from CaMnBi2 orSrMnBi2 , which suggests the possible different magnetic structure of BaMnBi2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H2
###Large linear magnetoresistance in a new Dirac material BaMnBi2|Yi-Yan Wang,Qiao-He Yu,Tian-Long Xia###
(195419, 195420)
 A crossover from semiclassical MR-H2 dependence in low field to MR-Hdependence in high field is observed in transverse magnetoresistance.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Large linear magnetoresistance in a new Dirac material BaMnBi2|Yi-Yan Wang,Qiao-He Yu,Tian-Long Xia###
(195435, 195435)
 A crossover from semiclassical MR-H2 dependence in low field to MR-Hdependence in high field is observed in transverse magnetoresistance.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BaMnBi2
###Large linear magnetoresistance in a new Dirac material BaMnBi2|Yi-Yan Wang,Qiao-He Yu,Tian-Long Xia###
(195476, 195479)
 Ourresults indicate the anisotropic Dirac fermion states in BaMnBi2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Spin Hall magnetoresistance in antiferromagnet/normal metal bilayers|A. Manchon###
(195617, 195617)
 Based on a recentlyderived drift-diffusion equation, we show that the resistance of the bilayerdepends on the relative angle between the direction transverse to the currentflow and the Neel order parameter.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.7Sr0.3MnO3
###Unsaturated magnetoconductance of epitaxial La0.7Sr0.3MnO3 thin films in pulsed magnetic fields up to 60 T|Wei Niu,Xuefeng Wang,Ming Gao,Zhengcai Xia,Jun Du,Yuefeng Nie,Fengqi Song,Yongbing Xu,Rong Zhang###
(195718, 195724)
Unsaturated magnetoconductance of epitaxial La0.7Sr0.3MnO3 thin films in pulsed magnetic fields up to 60 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 60, 'T', 0],[79.0, 60, 'T', 1],[197.0, 60, 'T', 4]

La0.7Sr0.3MnO3
###Unsaturated magnetoconductance of epitaxial La0.7Sr0.3MnO3 thin films in pulsed magnetic fields up to 60 T|Wei Niu,Xuefeng Wang,Ming Gao,Zhengcai Xia,Jun Du,Yuefeng Nie,Fengqi Song,Yongbing Xu,Rong Zhang###
(195767, 195773)
 We report on the temperature and field dependence of resistance ofLa0.7Sr0.3MnO3 thin films over a wide temperature range and in pulsed magneticfields up to 60 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 60, 'T', 1],[30.0, 60, 'T', 0],[148.0, 60, 'T', 3]

La0.7Sr0.3MnO3
###Unsaturated magnetoconductance of epitaxial La0.7Sr0.3MnO3 thin films in pulsed magnetic fields up to 60 T|Wei Niu,Xuefeng Wang,Ming Gao,Zhengcai Xia,Jun Du,Yuefeng Nie,Fengqi Song,Yongbing Xu,Rong Zhang###
(195810, 195816)
 The epitaxial La0.7Sr0.3MnO3 thin films were deposited bylaser molecular beam epitaxy.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 60, 'T', 2],[7.0, 60, 'T', 1],[105.0, 60, 'T', 2]

Au2Mn
###Pressure Tuning of Collapse of Helimagnetic Structure in Au$_2$Mn|I-Lin Liu,Maria J. Pascale,Juscelino B. Leao,Craig M. Brown,William D. Ratcliff,Qingzhen Huang,Nicholas P. Butch###
(195995, 195997)
Pressure Tuning of Collapse of Helimagnetic Structure in Au2Mn.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 16.4, 'kbar', 1]

Au2Mn
###Pressure Tuning of Collapse of Helimagnetic Structure in Au$_2$Mn|I-Lin Liu,Maria J. Pascale,Juscelino B. Leao,Craig M. Brown,William D. Ratcliff,Qingzhen Huang,Nicholas P. Butch###
(196025, 196027)
 We identify the phase boundary between spiral spin and ferromagnetic phasesin Au2Mn at a critical pressure of 16.4 kbar, as determined by neutrondiffraction, magnetization and magnetoresistance measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 16.4, 'kbar', 0]

Bi2Se3
###Coexistence of surface and bulk state and negative magnetoresistance in Sulfur doped Bi2Se3|Rahul Singh,Vinod K. Gangwar,D. D. Daga,Mahima Singh,A. K. Ghosh,Manoranjan Kumar,A. Lakhani,Rajeev Singh,Sandip Chatterjee###
(196258, 196261)
Coexistence of surface and bulk state and negative magnetoresistance in Sulfur doped Bi2Se3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 7, '%', 2]

Bi2Se3
###Coexistence of surface and bulk state and negative magnetoresistance in Sulfur doped Bi2Se3|Rahul Singh,Vinod K. Gangwar,D. D. Daga,Mahima Singh,A. K. Ghosh,Manoranjan Kumar,A. Lakhani,Rajeev Singh,Sandip Chatterjee###
(196278, 196281)
 The magneto-transport properties in Sulfur doped Bi2Se3 are investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 7, '%', 1]

S
###Coexistence of surface and bulk state and negative magnetoresistance in Sulfur doped Bi2Se3|Rahul Singh,Vinod K. Gangwar,D. D. Daga,Mahima Singh,A. K. Ghosh,Manoranjan Kumar,A. Lakhani,Rajeev Singh,Sandip Chatterjee###
(196306, 196306)
 Themagnetoresistance (MR) decreases with increase of S content and finally for 7%(i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 7, '%', 0]

S
###Coexistence of surface and bulk state and negative magnetoresistance in Sulfur doped Bi2Se3|Rahul Singh,Vinod K. Gangwar,D. D. Daga,Mahima Singh,A. K. Ghosh,Manoranjan Kumar,A. Lakhani,Rajeev Singh,Sandip Chatterjee###
(196330, 196330)
 y<missing VAR>0.21) S doping the magnetoresistance becomes negative.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 7, '%', 1]

H
###Coexistence of surface and bulk state and negative magnetoresistance in Sulfur doped Bi2Se3|Rahul Singh,Vinod K. Gangwar,D. D. Daga,Mahima Singh,A. K. Ghosh,Manoranjan Kumar,A. Lakhani,Rajeev Singh,Sandip Chatterjee###
(196416, 196416)
 The magneto-transportbehavior shows the shubnikov-de hass (SdH) oscillation indicating thecoexistence of both surface and bulk states.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 7, '%', 3]

Co2FeAl/Pt
###Suppression of the fieldlike spin-orbit torque efficiency due to the magnetic proximity effect in ferromagnet/platinum bilayers|T. A. Peterson,A. P. McFadden,C. J. Palmstrøm,P. A. Crowell###
(196521, 196526)
 Current-induced spin-orbit torques in Co2FeAl/Pt ultrathin bilayers arestudied using a magnetoresistive harmonic response technique, whichdistinguishes the dampinglike and fieldlike contributions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Pt
###Suppression of the fieldlike spin-orbit torque efficiency due to the magnetic proximity effect in ferromagnet/platinum bilayers|T. A. Peterson,A. P. McFadden,C. J. Palmstrøm,P. A. Crowell###
(196654, 196654)
 The fieldlike torque efficiencydecreases steadily as the temperature is lowered for all Pt thicknessesstudied, which we propose is related to the influence of the magnetic proximityeffect on the fieldlike torque mechanism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(SOC)
###Enhanced spin-orbit coupling in a heavy metal via molecular coupling|Satam Alotibi,B. J. Hickey,Gilberto Teobaldi,Mannan Ali,Joseph Barker,Quentin Ramasse,Gavin Burnell,Mohammed Alyami,Timothy Moorsom,Oscar Cespedes###
(196758, 196762)
 Heavy metals are key to spintronics because of their high spin-orbit coupling(SOC) leading to efficient spin conversion and strong magnetic interactions.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 600, '%', 1],[98.0, 700, '%', 1]

C60
###Enhanced spin-orbit coupling in a heavy metal via molecular coupling|Satam Alotibi,B. J. Hickey,Gilberto Teobaldi,Mannan Ali,Joseph Barker,Quentin Ramasse,Gavin Burnell,Mohammed Alyami,Timothy Moorsom,Oscar Cespedes###
(196786, 196787)
When C60 is deposited on Pt, the molecular interface is metallised and the spinHall angle in YIG<missing VAR>/Pt increased, leading to an enhancement of up to 600% in thespin Hall magnetoresistance and 700% for the anisotropic magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 600, '%', 0],[73.0, 700, '%', 0]

Pt
###Enhanced spin-orbit coupling in a heavy metal via molecular coupling|Satam Alotibi,B. J. Hickey,Gilberto Teobaldi,Mannan Ali,Joseph Barker,Quentin Ramasse,Gavin Burnell,Mohammed Alyami,Timothy Moorsom,Oscar Cespedes###
(196795, 196795)
When C60 is deposited on Pt, the molecular interface is metallised and the spinHall angle in YIG<missing VAR>/Pt increased, leading to an enhancement of up to 600% in thespin Hall magnetoresistance and 700% for the anisotropic magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 600, '%', 0],[65.0, 700, '%', 0]

YI
###Enhanced spin-orbit coupling in a heavy metal via molecular coupling|Satam Alotibi,B. J. Hickey,Gilberto Teobaldi,Mannan Ali,Joseph Barker,Quentin Ramasse,Gavin Burnell,Mohammed Alyami,Timothy Moorsom,Oscar Cespedes###
(196821, 196822)
When C60 is deposited on Pt, the molecular interface is metallised and the spinHall angle in YIG<missing VAR>/Pt increased, leading to an enhancement of up to 600% in thespin Hall magnetoresistance and 700% for the anisotropic magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 600, '%', 0],[38.0, 700, '%', 0]

Pt
###Enhanced spin-orbit coupling in a heavy metal via molecular coupling|Satam Alotibi,B. J. Hickey,Gilberto Teobaldi,Mannan Ali,Joseph Barker,Quentin Ramasse,Gavin Burnell,Mohammed Alyami,Timothy Moorsom,Oscar Cespedes###
(196825, 196825)
When C60 is deposited on Pt, the molecular interface is metallised and the spinHall angle in YIG<missing VAR>/Pt increased, leading to an enhancement of up to 600% in thespin Hall magnetoresistance and 700% for the anisotropic magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 600, '%', 0],[35.0, 700, '%', 0]

V/C60
###Enhanced spin-orbit coupling in a heavy metal via molecular coupling|Satam Alotibi,B. J. Hickey,Gilberto Teobaldi,Mannan Ali,Joseph Barker,Quentin Ramasse,Gavin Burnell,Mohammed Alyami,Timothy Moorsom,Oscar Cespedes###
(196897, 196900)
This correlates with Density Functional Theory simulations showing changes of0.46 e<missing VAR>V/C60 in the SOC of Pt.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[53.0, 600, '%', 1],[37.0, 700, '%', 1]

SOC
###Enhanced spin-orbit coupling in a heavy metal via molecular coupling|Satam Alotibi,B. J. Hickey,Gilberto Teobaldi,Mannan Ali,Joseph Barker,Quentin Ramasse,Gavin Burnell,Mohammed Alyami,Timothy Moorsom,Oscar Cespedes###
(196906, 196908)
This correlates with Density Functional Theory simulations showing changes of0.46 e<missing VAR>V/C60 in the SOC of Pt.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 600, '%', 1],[46.0, 700, '%', 1]

Pt
###Enhanced spin-orbit coupling in a heavy metal via molecular coupling|Satam Alotibi,B. J. Hickey,Gilberto Teobaldi,Mannan Ali,Joseph Barker,Quentin Ramasse,Gavin Burnell,Mohammed Alyami,Timothy Moorsom,Oscar Cespedes###
(196912, 196912)
This correlates with Density Functional Theory simulations showing changes of0.46 e<missing VAR>V/C60 in the SOC of Pt.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 600, '%', 1],[52.0, 700, '%', 1]

SOC
###Enhanced spin-orbit coupling in a heavy metal via molecular coupling|Satam Alotibi,B. J. Hickey,Gilberto Teobaldi,Mannan Ali,Joseph Barker,Quentin Ramasse,Gavin Burnell,Mohammed Alyami,Timothy Moorsom,Oscar Cespedes###
(196938, 196940)
 This effect opens the possibility of gating themolecular hybridisation and SOC of metals.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 600, '%', 2],[78.0, 700, '%', 2]

PrFe4P12
###Anomalous Anisotropic Magnetoresistance in Heavy-Fermion PrFe4P12|H. Sugawara,E. Kuramochi,T. Namiki,T. D. Matsuda,Y. Aoki,H. Sato###
(196967, 196971)
Anomalous Anisotropic Magnetoresistance in Heavy-Fermion PrFe4P12.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7058823529411765,0,0,0,0,0,0,0,0,0,0,0.23529411764705882,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.058823529411764705,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pr
###Anomalous Anisotropic Magnetoresistance in Heavy-Fermion PrFe4P12|H. Sugawara,E. Kuramochi,T. Namiki,T. D. Matsuda,Y. Aoki,H. Sato###
(196994, 196994)
 We have investigated the anisotropy of the magnetoresistance in the Pr-basedHF compound PrFe4P12.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HF
###Anomalous Anisotropic Magnetoresistance in Heavy-Fermion PrFe4P12|H. Sugawara,E. Kuramochi,T. Namiki,T. D. Matsuda,Y. Aoki,H. Sato###
(196999, 197000)
 We have investigated the anisotropy of the magnetoresistance in the Pr-basedHF compound PrFe4P12.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PrFe4P12
###Anomalous Anisotropic Magnetoresistance in Heavy-Fermion PrFe4P12|H. Sugawara,E. Kuramochi,T. Namiki,T. D. Matsuda,Y. Aoki,H. Sato###
(197004, 197008)
 We have investigated the anisotropy of the magnetoresistance in the Pr-basedHF compound PrFe4P12.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7058823529411765,0,0,0,0,0,0,0,0,0,0,0.23529411764705882,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.058823529411764705,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Anomalous Anisotropic Magnetoresistance in Heavy-Fermion PrFe4P12|H. Sugawara,E. Kuramochi,T. Namiki,T. D. Matsuda,Y. Aoki,H. Sato###
(197052, 197052)
 Particularlyfor H[111], where the effective mass is most strongly enhanced, the non-Fermiliquid behavior has been observed.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Anomalous Anisotropic Magnetoresistance in Heavy-Fermion PrFe4P12|H. Sugawara,E. Kuramochi,T. Namiki,T. D. Matsuda,Y. Aoki,H. Sato###
(197121, 197121)
 Also, we have found the angular dependenceof the magnetoresistance sharply enhanced at H[111], which is evidentlycorrelated with both the non-Fermi liquid behavior and the high-field orderedstate (B-phase).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Anomalous Anisotropic Magnetoresistance in Heavy-Fermion PrFe4P12|H. Sugawara,E. Kuramochi,T. Namiki,T. D. Matsuda,Y. Aoki,H. Sato###
(197164, 197164)
 Also, we have found the angular dependenceof the magnetoresistance sharply enhanced at H[111], which is evidentlycorrelated with both the non-Fermi liquid behavior and the high-field orderedstate (B-phase).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr2RuO4
###Effect of half-quantum vortices on magnetoresistance of perforated superconducting films|Victor Vakaryuk,Valerii Vinokur###
(197222, 197226)
 Recent cantilever magnetometry measurements of annular micron-size samples ofSr2RuO4 have revealed evidence for the existence of half-quantum vortices(HQ<missing VAR>Vs) in this material [Jang et al.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Effect of half-quantum vortices on magnetoresistance of perforated superconducting films|Victor Vakaryuk,Valerii Vinokur###
(197250, 197250)
 Recent cantilever magnetometry measurements of annular micron-size samples ofSr2RuO4 have revealed evidence for the existence of half-quantum vortices(HQ<missing VAR>Vs) in this material [Jang et al.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Effect of half-quantum vortices on magnetoresistance of perforated superconducting films|Victor Vakaryuk,Valerii Vinokur###
(197283, 197283)
 We propose to look for HQ<missing VAR>Vs intransport measurements and calculate magnetoresistance of a perforatedsuperconducting film close to the transition temperature in the presence ofHQ<missing VAR>Vs.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Effect of half-quantum vortices on magnetoresistance of perforated superconducting films|Victor Vakaryuk,Valerii Vinokur###
(197330, 197330)
 We propose to look for HQ<missing VAR>Vs intransport measurements and calculate magnetoresistance of a perforatedsuperconducting film close to the transition temperature in the presence ofHQ<missing VAR>Vs.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Effect of half-quantum vortices on magnetoresistance of perforated superconducting films|Victor Vakaryuk,Valerii Vinokur###
(197358, 197358)
 We analyze the dependence of magnetoresistance on the thermodynamicstability of HQ<missing VAR>Vs which according to [Jang et al.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Na3Bi
###Giant Planar Hall Effect in Topological Metals|A. A. Burkov###
(197519, 197521)
 This manifests as strongnegative longitudinal magnetoresistance and has so far been clearly observed inNa3Bi, ZrTe5, and GdPtBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZrTe5
###Giant Planar Hall Effect in Topological Metals|A. A. Burkov###
(197524, 197526)
 This manifests as strongnegative longitudinal magnetoresistance and has so far been clearly observed inNa3Bi, ZrTe5, and GdPtBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GdPtBi
###Giant Planar Hall Effect in Topological Metals|A. A. Burkov###
(197531, 197533)
 This manifests as strongnegative longitudinal magnetoresistance and has so far been clearly observed inNa3Bi, ZrTe5, and GdPtBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Giant Planar Hall Effect in Topological Metals|A. A. Burkov###
(197536, 197536)
 In this work we point out that the chiralanomaly must lead to another effect in topological metals, that has beenoverlooked so far Giant Planar Hall Effect (G<missing VAR>PHE), which is the appearance ofa large transverse voltage when the in plane magnetic field is not aligned withthe current.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PH
###Giant Planar Hall Effect in Topological Metals|A. A. Burkov###
(197597, 197598)
 In this work we point out that the chiralanomaly must lead to another effect in topological metals, that has beenoverlooked so far Giant Planar Hall Effect (G<missing VAR>PHE), which is the appearance ofa large transverse voltage when the in plane magnetic field is not aligned withthe current.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PH
###Giant Planar Hall Effect in Topological Metals|A. A. Burkov###
(197660, 197661)
 Moreover, we demonstrate that the G<missing VAR>PHE<missing VAR> is closely related to theangular narrowing of the negative longitudinal magnetoresistance signal,observed experimentally.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr2O3/Ta
###Anomalous Hall effect induced spin Hall magnetoresistance in an antiferromagnetic Cr2O3/Ta bilayer|Yang Ji,J. Miao,K. K. Meng,X. G. Xu,J. K. Chen,Y. Wu,Y. Jiang###
(197994, 197999)
Anomalous Hall effect induced spin Hall magnetoresistance in an antiferromagnetic Cr2O3/Ta bilayer.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

S
###Anomalous Hall effect induced spin Hall magnetoresistance in an antiferromagnetic Cr2O3/Ta bilayer|Yang Ji,J. Miao,K. K. Meng,X. G. Xu,J. K. Chen,Y. Wu,Y. Jiang###
(198013, 198013)
 The spin Hall magnetoresistance (SMR) and anomalous Hall effect (AHE) areobserved in a Cr2O3/Ta structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Anomalous Hall effect induced spin Hall magnetoresistance in an antiferromagnetic Cr2O3/Ta bilayer|Yang Ji,J. Miao,K. K. Meng,X. G. Xu,J. K. Chen,Y. Wu,Y. Jiang###
(198028, 198028)
 The spin Hall magnetoresistance (SMR) and anomalous Hall effect (AHE) areobserved in a Cr2O3/Ta structure.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr2O3/Ta
###Anomalous Hall effect induced spin Hall magnetoresistance in an antiferromagnetic Cr2O3/Ta bilayer|Yang Ji,J. Miao,K. K. Meng,X. G. Xu,J. K. Chen,Y. Wu,Y. Jiang###
(198041, 198046)
 The spin Hall magnetoresistance (SMR) and anomalous Hall effect (AHE) areobserved in a Cr2O3/Ta structure.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Cr2O3/Ta
###Anomalous Hall effect induced spin Hall magnetoresistance in an antiferromagnetic Cr2O3/Ta bilayer|Yang Ji,J. Miao,K. K. Meng,X. G. Xu,J. K. Chen,Y. Wu,Y. Jiang###
(198064, 198069)
 The structural and surface morphology ofCr2O3/Ta bilayers have been investigated.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

S
###Anomalous Hall effect induced spin Hall magnetoresistance in an antiferromagnetic Cr2O3/Ta bilayer|Yang Ji,J. Miao,K. K. Meng,X. G. Xu,J. K. Chen,Y. Wu,Y. Jiang###
(198106, 198106)
 Temperature dependence oflongitudinal and transverse resistances measurements confirm the relationshipbetween SMR and AHE<missing VAR> signals in Cr2O3/Ta structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Anomalous Hall effect induced spin Hall magnetoresistance in an antiferromagnetic Cr2O3/Ta bilayer|Yang Ji,J. Miao,K. K. Meng,X. G. Xu,J. K. Chen,Y. Wu,Y. Jiang###
(198113, 198113)
 Temperature dependence oflongitudinal and transverse resistances measurements confirm the relationshipbetween SMR and AHE<missing VAR> signals in Cr2O3/Ta structure.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr2O3/Ta
###Anomalous Hall effect induced spin Hall magnetoresistance in an antiferromagnetic Cr2O3/Ta bilayer|Yang Ji,J. Miao,K. K. Meng,X. G. Xu,J. K. Chen,Y. Wu,Y. Jiang###
(198120, 198125)
 Temperature dependence oflongitudinal and transverse resistances measurements confirm the relationshipbetween SMR and AHE<missing VAR> signals in Cr2O3/Ta structure.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

S
###Anomalous Hall effect induced spin Hall magnetoresistance in an antiferromagnetic Cr2O3/Ta bilayer|Yang Ji,J. Miao,K. K. Meng,X. G. Xu,J. K. Chen,Y. Wu,Y. Jiang###
(198154, 198154)
 By means of temperaturedependent magnetoresistance measurements, the physical origin of SMR in theCr2O3/Ta structure is revealed, and the contribution to the SMR from the spincurrent generated by AHE<missing VAR> has been proved.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr2O3/Ta
###Anomalous Hall effect induced spin Hall magnetoresistance in an antiferromagnetic Cr2O3/Ta bilayer|Yang Ji,J. Miao,K. K. Meng,X. G. Xu,J. K. Chen,Y. Wu,Y. Jiang###
(198163, 198168)
 By means of temperaturedependent magnetoresistance measurements, the physical origin of SMR in theCr2O3/Ta structure is revealed, and the contribution to the SMR from the spincurrent generated by AHE<missing VAR> has been proved.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

S
###Anomalous Hall effect induced spin Hall magnetoresistance in an antiferromagnetic Cr2O3/Ta bilayer|Yang Ji,J. Miao,K. K. Meng,X. G. Xu,J. K. Chen,Y. Wu,Y. Jiang###
(198187, 198187)
 By means of temperaturedependent magnetoresistance measurements, the physical origin of SMR in theCr2O3/Ta structure is revealed, and the contribution to the SMR from the spincurrent generated by AHE<missing VAR> has been proved.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Anomalous Hall effect induced spin Hall magnetoresistance in an antiferromagnetic Cr2O3/Ta bilayer|Yang Ji,J. Miao,K. K. Meng,X. G. Xu,J. K. Chen,Y. Wu,Y. Jiang###
(198205, 198205)
 By means of temperaturedependent magnetoresistance measurements, the physical origin of SMR in theCr2O3/Ta structure is revealed, and the contribution to the SMR from the spincurrent generated by AHE<missing VAR> has been proved.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr2O3
###Anomalous Hall effect induced spin Hall magnetoresistance in an antiferromagnetic Cr2O3/Ta bilayer|Yang Ji,J. Miao,K. K. Meng,X. G. Xu,J. K. Chen,Y. Wu,Y. Jiang###
(198240, 198243)
 The so-called boundary magnetizationdue to the bulk antiferromagnetic order in Cr2O3 film may be responsible forthe relationship of SMR and AHE<missing VAR> in the Cr2O3/Ta bilayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Anomalous Hall effect induced spin Hall magnetoresistance in an antiferromagnetic Cr2O3/Ta bilayer|Yang Ji,J. Miao,K. K. Meng,X. G. Xu,J. K. Chen,Y. Wu,Y. Jiang###
(198262, 198262)
 The so-called boundary magnetizationdue to the bulk antiferromagnetic order in Cr2O3 film may be responsible forthe relationship of SMR and AHE<missing VAR> in the Cr2O3/Ta bilayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Anomalous Hall effect induced spin Hall magnetoresistance in an antiferromagnetic Cr2O3/Ta bilayer|Yang Ji,J. Miao,K. K. Meng,X. G. Xu,J. K. Chen,Y. Wu,Y. Jiang###
(198269, 198269)
 The so-called boundary magnetizationdue to the bulk antiferromagnetic order in Cr2O3 film may be responsible forthe relationship of SMR and AHE<missing VAR> in the Cr2O3/Ta bilayer.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr2O3/Ta
###Anomalous Hall effect induced spin Hall magnetoresistance in an antiferromagnetic Cr2O3/Ta bilayer|Yang Ji,J. Miao,K. K. Meng,X. G. Xu,J. K. Chen,Y. Wu,Y. Jiang###
(198276, 198281)
 The so-called boundary magnetizationdue to the bulk antiferromagnetic order in Cr2O3 film may be responsible forthe relationship of SMR and AHE<missing VAR> in the Cr2O3/Ta bilayer.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Cd1-x
###Negative magnetoresistance suppressed through topological phase transition in (Cd1-xZnx)3As2 films|S. Nishihaya,M. Uchida,Y. Nakazawa,K. Akiba,M. Kriener,Y. Kozuka,A. Miyake,Y. Taguchi,M. Tokunaga,M. Kawasaki###
(198311, 198314)
Negative magnetoresistance suppressed through topological phase transition in (Cd1-xZnx)3As2 films.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

As2
###Negative magnetoresistance suppressed through topological phase transition in (Cd1-xZnx)3As2 films|S. Nishihaya,M. Uchida,Y. Nakazawa,K. Akiba,M. Kriener,Y. Kozuka,A. Miyake,Y. Taguchi,M. Tokunaga,M. Kawasaki###
(198318, 198319)
Negative magnetoresistance suppressed through topological phase transition in (Cd1-xZnx)3As2 films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cd1-x
###Negative magnetoresistance suppressed through topological phase transition in (Cd1-xZnx)3As2 films|S. Nishihaya,M. Uchida,Y. Nakazawa,K. Akiba,M. Kriener,Y. Kozuka,A. Miyake,Y. Taguchi,M. Tokunaga,M. Kawasaki###
(198402, 198405)
 Here, we report amagnetotransport study of high-mobility (Cd1-xZnx)3As2 films, where thetopological Dirac semimetal phase can be turned into a trivial insulator viachemical substitution.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

As2
###Negative magnetoresistance suppressed through topological phase transition in (Cd1-xZnx)3As2 films|S. Nishihaya,M. Uchida,Y. Nakazawa,K. Akiba,M. Kriener,Y. Kozuka,A. Miyake,Y. Taguchi,M. Tokunaga,M. Kawasaki###
(198409, 198410)
 Here, we report amagnetotransport study of high-mobility (Cd1-xZnx)3As2 films, where thetopological Dirac semimetal phase can be turned into a trivial insulator viachemical substitution.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Zn
###Negative magnetoresistance suppressed through topological phase transition in (Cd1-xZnx)3As2 films|S. Nishihaya,M. Uchida,Y. Nakazawa,K. Akiba,M. Kriener,Y. Kozuka,A. Miyake,Y. Taguchi,M. Tokunaga,M. Kawasaki###
(198519, 198519)
 The negative magnetoresistanceexhibits a clear suppression upon Zn doping, reflecting decreasing Berrycurvature of the band structure as the topological phase transition is inducedby reducing the spin-orbit coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Consequences of the CMR effect on EELS in TEM|Wolfgang Wallisch,Michael Stöger-Pollach,Edvinas Navickas###
(198583, 198583)
Consequences of the CMR effect on EELS in TEM.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Consequences of the CMR effect on EELS in TEM|Wolfgang Wallisch,Michael Stöger-Pollach,Edvinas Navickas###
(198594, 198594)
Consequences of the CMR effect on EELS in TEM.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Consequences of the CMR effect on EELS in TEM|Wolfgang Wallisch,Michael Stöger-Pollach,Edvinas Navickas###
(198640, 198640)
 Double perovskite oxides have gained in importance and exhibit negativemagnetoresistance, which is known as colossal magnetoresistance (CMR) effect.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La2CoMnO6
###Consequences of the CMR effect on EELS in TEM|Wolfgang Wallisch,Michael Stöger-Pollach,Edvinas Navickas###
(198653, 198658)
Using a La2CoMnO6 (LCM) thin film we prove that the physical consequencesof the CMR effect do also influence the electron energy loss spectrometry(EELS) signal.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Consequences of the CMR effect on EELS in TEM|Wolfgang Wallisch,Michael Stöger-Pollach,Edvinas Navickas###
(198687, 198687)
Using a La2CoMnO6 (LCM) thin film we prove that the physical consequencesof the CMR effect do also influence the electron energy loss spectrometry(EELS) signal.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Consequences of the CMR effect on EELS in TEM|Wolfgang Wallisch,Michael Stöger-Pollach,Edvinas Navickas###
(198714, 198714)
Using a La2CoMnO6 (LCM) thin film we prove that the physical consequencesof the CMR effect do also influence the electron energy loss spectrometry(EELS) signal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Consequences of the CMR effect on EELS in TEM|Wolfgang Wallisch,Michael Stöger-Pollach,Edvinas Navickas###
(198783, 198783)
 We observe a change of the band gap at low energy losses and areable to study the magnetisation with chemical sensitivity by employing energyloss magnetic chiral dichroism (EMCD) below the Curie temperature T<missing VAR>C wherethe CMR effect becomes significant.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Consequences of the CMR effect on EELS in TEM|Wolfgang Wallisch,Michael Stöger-Pollach,Edvinas Navickas###
(198796, 198796)
 We observe a change of the band gap at low energy losses and areable to study the magnetisation with chemical sensitivity by employing energyloss magnetic chiral dichroism (EMCD) below the Curie temperature T<missing VAR>C wherethe CMR effect becomes significant.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Consequences of the CMR effect on EELS in TEM|Wolfgang Wallisch,Michael Stöger-Pollach,Edvinas Navickas###
(198803, 198803)
 We observe a change of the band gap at low energy losses and areable to study the magnetisation with chemical sensitivity by employing energyloss magnetic chiral dichroism (EMCD) below the Curie temperature T<missing VAR>C wherethe CMR effect becomes significant.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFeB
###Domain wall resistance in CoFeB-based heterostructures with interface Dzyaloshinskii-Moriya interaction|Yuto Ishikuro,Masashi Kawaguchi,Yong-Chang Lau,Yoshinobu Nakatani,Masamitsu Hayashi###
(198830, 198832)
Domain wall resistance in CoFeB-based heterostructures with interface Dzyaloshinskii-Moriya interaction.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W/Ta/CoFeB/MgO
###Domain wall resistance in CoFeB-based heterostructures with interface Dzyaloshinskii-Moriya interaction|Yuto Ishikuro,Masashi Kawaguchi,Yong-Chang Lau,Yoshinobu Nakatani,Masamitsu Hayashi###
(198865, 198874)
 We have studied the domain wall resistance in W/Ta/CoFeB/MgOheterostructures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Ta
###Domain wall resistance in CoFeB-based heterostructures with interface Dzyaloshinskii-Moriya interaction|Yuto Ishikuro,Masashi Kawaguchi,Yong-Chang Lau,Yoshinobu Nakatani,Masamitsu Hayashi###
(198882, 198882)
 The Ta layer thickness is varied to control the type ofdomain walls via changes in the interfacial Dzyaloshinskii Moriya interaction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ta
###Domain wall resistance in CoFeB-based heterostructures with interface Dzyaloshinskii-Moriya interaction|Yuto Ishikuro,Masashi Kawaguchi,Yong-Chang Lau,Yoshinobu Nakatani,Masamitsu Hayashi###
(198945, 198945)
We find a nearly constant domain wall resistance against the Ta layerthickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ta
###Domain wall resistance in CoFeB-based heterostructures with interface Dzyaloshinskii-Moriya interaction|Yuto Ishikuro,Masashi Kawaguchi,Yong-Chang Lau,Yoshinobu Nakatani,Masamitsu Hayashi###
(199000, 199000)
 Adding contributions from the anisotropic magnetoresistance, spinHall magnetoresistance and anomalous Hall effect describe well the domain wallresistance of the thick Ta layer films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ta
###Domain wall resistance in CoFeB-based heterostructures with interface Dzyaloshinskii-Moriya interaction|Yuto Ishikuro,Masashi Kawaguchi,Yong-Chang Lau,Yoshinobu Nakatani,Masamitsu Hayashi###
(199023, 199023)
 However, a discrepancy remains for thethin Ta layer films wherein chiral Neel-like domain walls are found.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Domain wall resistance in CoFeB-based heterostructures with interface Dzyaloshinskii-Moriya interaction|Yuto Ishikuro,Masashi Kawaguchi,Yong-Chang Lau,Yoshinobu Nakatani,Masamitsu Hayashi###
(199033, 199033)
 However, a discrepancy remains for thethin Ta layer films wherein chiral Neel-like domain walls are found.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Anisotropic Magnetoresistance and Nontrivial Spin Hall Magnetoresistance in Pt/$α$-Fe$_2$O$_3$ Bilayers|Yang Cheng,Sisheng Yu,Adam S. Ahmed,Menglin Zhu,Jinwoo Hwang,Fengyuan Yang###
(199102, 199102)
Anisotropic Magnetoresistance and Nontrivial Spin Hall Magnetoresistance in Pt/-Fe2O3 Bilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 10, 'K', 2]

Fe2O3
###Anisotropic Magnetoresistance and Nontrivial Spin Hall Magnetoresistance in Pt/$α$-Fe$_2$O$_3$ Bilayers|Yang Cheng,Sisheng Yu,Adam S. Ahmed,Menglin Zhu,Jinwoo Hwang,Fengyuan Yang###
(199105, 199108)
Anisotropic Magnetoresistance and Nontrivial Spin Hall Magnetoresistance in Pt/-Fe2O3 Bilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 10, 'K', 2]

F
###Anisotropic Magnetoresistance and Nontrivial Spin Hall Magnetoresistance in Pt/$α$-Fe$_2$O$_3$ Bilayers|Yang Cheng,Sisheng Yu,Adam S. Ahmed,Menglin Zhu,Jinwoo Hwang,Fengyuan Yang###
(199146, 199146)
 To date, magnetic proximity effect (MPE) has only been conclusively observedin ferromagnet (FM) based systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 10, 'K', 1]

Pt
###Anisotropic Magnetoresistance and Nontrivial Spin Hall Magnetoresistance in Pt/$α$-Fe$_2$O$_3$ Bilayers|Yang Cheng,Sisheng Yu,Adam S. Ahmed,Menglin Zhu,Jinwoo Hwang,Fengyuan Yang###
(199198, 199198)
 We report the observation of anomalous Halleffect and anisotropic magnetoresistance in angular dependent magnetoresistance(ADMR) measurements in Pt on antiferromagnetic (AF) alpha-Fe2O3(0001)epitaxial films at 10 K, which provide evidence for the MPE.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 10, 'K', 0]

F
###Anisotropic Magnetoresistance and Nontrivial Spin Hall Magnetoresistance in Pt/$α$-Fe$_2$O$_3$ Bilayers|Yang Cheng,Sisheng Yu,Adam S. Ahmed,Menglin Zhu,Jinwoo Hwang,Fengyuan Yang###
(199206, 199206)
 We report the observation of anomalous Halleffect and anisotropic magnetoresistance in angular dependent magnetoresistance(ADMR) measurements in Pt on antiferromagnetic (AF) alpha-Fe2O3(0001)epitaxial films at 10 K, which provide evidence for the MPE.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 10, 'K', 0]

O3
###Anisotropic Magnetoresistance and Nontrivial Spin Hall Magnetoresistance in Pt/$α$-Fe$_2$O$_3$ Bilayers|Yang Cheng,Sisheng Yu,Adam S. Ahmed,Menglin Zhu,Jinwoo Hwang,Fengyuan Yang###
(199213, 199214)
 We report the observation of anomalous Halleffect and anisotropic magnetoresistance in angular dependent magnetoresistance(ADMR) measurements in Pt on antiferromagnetic (AF) alpha-Fe2O3(0001)epitaxial films at 10 K, which provide evidence for the MPE.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 10, 'K', 0]

N
###Anisotropic Magnetoresistance and Nontrivial Spin Hall Magnetoresistance in Pt/$α$-Fe$_2$O$_3$ Bilayers|Yang Cheng,Sisheng Yu,Adam S. Ahmed,Menglin Zhu,Jinwoo Hwang,Fengyuan Yang###
(199245, 199245)
 The Neel orderof alpha-Fe2O3 and the induced magnetization in Pt show a unique ADMRcompared with all other FM<missing VAR> and AF systems.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 10, 'K', 1]

Fe2O3
###Anisotropic Magnetoresistance and Nontrivial Spin Hall Magnetoresistance in Pt/$α$-Fe$_2$O$_3$ Bilayers|Yang Cheng,Sisheng Yu,Adam S. Ahmed,Menglin Zhu,Jinwoo Hwang,Fengyuan Yang###
(199255, 199258)
 The Neel orderof alpha-Fe2O3 and the induced magnetization in Pt show a unique ADMRcompared with all other FM<missing VAR> and AF systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 10, 'K', 1]

Pt
###Anisotropic Magnetoresistance and Nontrivial Spin Hall Magnetoresistance in Pt/$α$-Fe$_2$O$_3$ Bilayers|Yang Cheng,Sisheng Yu,Adam S. Ahmed,Menglin Zhu,Jinwoo Hwang,Fengyuan Yang###
(199270, 199270)
 The Neel orderof alpha-Fe2O3 and the induced magnetization in Pt show a unique ADMRcompared with all other FM<missing VAR> and AF systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 10, 'K', 1]

F
###Anisotropic Magnetoresistance and Nontrivial Spin Hall Magnetoresistance in Pt/$α$-Fe$_2$O$_3$ Bilayers|Yang Cheng,Sisheng Yu,Adam S. Ahmed,Menglin Zhu,Jinwoo Hwang,Fengyuan Yang###
(199292, 199292)
 The Neel orderof alpha-Fe2O3 and the induced magnetization in Pt show a unique ADMRcompared with all other FM<missing VAR> and AF systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 10, 'K', 1]

F
###Anisotropic Magnetoresistance and Nontrivial Spin Hall Magnetoresistance in Pt/$α$-Fe$_2$O$_3$ Bilayers|Yang Cheng,Sisheng Yu,Adam S. Ahmed,Menglin Zhu,Jinwoo Hwang,Fengyuan Yang###
(199298, 199298)
 The Neel orderof alpha-Fe2O3 and the induced magnetization in Pt show a unique ADMRcompared with all other FM<missing VAR> and AF systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 10, 'K', 1]

F
###Anisotropic Magnetoresistance and Nontrivial Spin Hall Magnetoresistance in Pt/$α$-Fe$_2$O$_3$ Bilayers|Yang Cheng,Sisheng Yu,Adam S. Ahmed,Menglin Zhu,Jinwoo Hwang,Fengyuan Yang###
(199325, 199325)
 A macrospin response model isestablished and can explain the AF spin configuration and all main ADMRfeatures in the Pt/alpha-Fe2O3 bilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 10, 'K', 2]

Pt
###Anisotropic Magnetoresistance and Nontrivial Spin Hall Magnetoresistance in Pt/$α$-Fe$_2$O$_3$ Bilayers|Yang Cheng,Sisheng Yu,Adam S. Ahmed,Menglin Zhu,Jinwoo Hwang,Fengyuan Yang###
(199349, 199349)
 A macrospin response model isestablished and can explain the AF spin configuration and all main ADMRfeatures in the Pt/alpha-Fe2O3 bilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 10, 'K', 2]

Fe2O3
###Anisotropic Magnetoresistance and Nontrivial Spin Hall Magnetoresistance in Pt/$α$-Fe$_2$O$_3$ Bilayers|Yang Cheng,Sisheng Yu,Adam S. Ahmed,Menglin Zhu,Jinwoo Hwang,Fengyuan Yang###
(199353, 199356)
 A macrospin response model isestablished and can explain the AF spin configuration and all main ADMRfeatures in the Pt/alpha-Fe2O3 bilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 10, 'K', 2]

OH
###Detection of the Orbital Hall Effect by the Orbital-Spin Conversion|Jiewen Xiao,Yizhou Liu,Binghai Yan###
(199403, 199404)
 The intrinsic orbital Hall effect (OHE), the orbital counterpart of the spinHall effect, was predicted and studied theoretically for more than one decade,yet to be observed in experiments.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OH
###Detection of the Orbital Hall Effect by the Orbital-Spin Conversion|Jiewen Xiao,Yizhou Liu,Binghai Yan###
(199485, 199486)
 Here we propose a strategy to convert theorbital current in OHE<missing VAR> to the spin current via the spin-orbit coupling from thecontact.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OH
###Detection of the Orbital Hall Effect by the Orbital-Spin Conversion|Jiewen Xiao,Yizhou Liu,Binghai Yan###
(199524, 199525)
 Furthermore, we find that OHE<missing VAR> can induce large nonreciprocalmagnetoresistance when employing magnetic contact.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OH
###Detection of the Orbital Hall Effect by the Orbital-Spin Conversion|Jiewen Xiao,Yizhou Liu,Binghai Yan###
(199581, 199582)
 Both the generated spincurrent and the orbital Hall magnetoresistance can be applied to probe the OHE<missing VAR>in experiments and design orbitronic devices.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Negative Magneto-Resistance in a Long Superconducting Wires: Theory and Experiments|Boris Ya. Shapiro###
(199779, 199779)
 Simple analytical formula is obtained for the negativemagnetic resistance caused by both the thermodynamics (T<missing VAR>APS) and quantumfluctuations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PdCoO2
###Bloch-Lorentz magnetoresistance oscillations in delafossites|Kostas Vilkelis,Lin Wang,Anton Akhmerov###
(199865, 199868)
 Recent measurements of the out-of-plane magnetoresistance of delafossites(PdCoO2 and PtCoO2) observed oscillations closely resembling theAharonov-Bohm effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O2
###Bloch-Lorentz magnetoresistance oscillations in delafossites|Kostas Vilkelis,Lin Wang,Anton Akhmerov###
(199874, 199875)
 Recent measurements of the out-of-plane magnetoresistance of delafossites(PdCoO2 and PtCoO2) observed oscillations closely resembling theAharonov-Bohm effect.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Gigantic tunneling magnetoresistance in magnetic Weyl semimetal tunnel junctions|D. J. P. de Sousa,C. O. Ascencio,P. M. Haney,J. P. Wang,Tony Low###
(200506, 200506)
 In addition, we show that theFermi arc states give rise to a non-monotonic dependence of conductance on themisalignment angle between the magnetizations of the two contacts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CuMnAs
###Hysteretic effects and magnetotransport of electrically switched CuMnAs|Jan Zubáč,Zdeněk Kašpar,Filip Krizek,Tobias Förster,Richard P. Campion,Vít Novák,Tomáš Jungwirth,Kamil Olejník###
(200590, 200592)
Hysteretic effects and magnetotransport of electrically switched CuMnAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 14, 'T', 3],[111.0, 60, 'T', 3]

In
###Hysteretic effects and magnetotransport of electrically switched CuMnAs|Jan Zubáč,Zdeněk Kašpar,Filip Krizek,Tobias Förster,Richard P. Campion,Vít Novák,Tomáš Jungwirth,Kamil Olejník###
(200629, 200629)
 In thismanuscript, we investigate magnetoresistance effects in antiferromagneticCuMnAs upon switching into high-resistive states using electrical pulses.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 14, 'T', 1],[74.0, 60, 'T', 1]

CuMnAs
###Hysteretic effects and magnetotransport of electrically switched CuMnAs|Jan Zubáč,Zdeněk Kašpar,Filip Krizek,Tobias Förster,Richard P. Campion,Vít Novák,Tomáš Jungwirth,Kamil Olejník###
(200650, 200652)
 In thismanuscript, we investigate magnetoresistance effects in antiferromagneticCuMnAs upon switching into high-resistive states using electrical pulses.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 14, 'T', 1],[51.0, 60, 'T', 1]

CuMnAs
###Hysteretic effects and magnetotransport of electrically switched CuMnAs|Jan Zubáč,Zdeněk Kašpar,Filip Krizek,Tobias Förster,Richard P. Campion,Vít Novák,Tomáš Jungwirth,Kamil Olejník###
(200746, 200748)
 Byemploying magnetic field sweeps up to 14 T and magnetic field pulses up tosim 60 T, we reveal hysteretic phenomena and changes in themagnetoresistance, as well as the resilience of the switching signal in CuMnAsto the high magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 14, 'T', 0],[43.0, 60, 'T', 0]

CuMnAs
###Hysteretic effects and magnetotransport of electrically switched CuMnAs|Jan Zubáč,Zdeněk Kašpar,Filip Krizek,Tobias Förster,Richard P. Campion,Vít Novák,Tomáš Jungwirth,Kamil Olejník###
(200800, 200802)
 These properties of the switched state arediscussed in the context of recent studies of antiferromagnetic textures inCuMnAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 14, 'T', 1],[97.0, 60, 'T', 1]

CoO
###Antiferromagnetic Hysteresis above the Spin Flop Field|M. J. Grzybowski,C. F. Schippers,O. Gomonay,K. Rubi,M. E. Bal,U. Zeitler,A. Kozioł-Rachwał,M. Szpytma,W. Janus,B. Kurowska,S. Kret,M. Gryglas-Borysiewicz,B. Koopmans,H. J. M. Swagten###
(200887, 200888)
 However, we demonstrate that in CoO the anisotropy should necessarilydepend on the magnetic field, which is shown by the spin Hall magnetoresistanceof the CoO  Pt device.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 240, 'K', 1],[79.0, 7.0, 'T', 1],[110.0, 30, 'T', 1]

CoO
###Antiferromagnetic Hysteresis above the Spin Flop Field|M. J. Grzybowski,C. F. Schippers,O. Gomonay,K. Rubi,M. E. Bal,U. Zeitler,A. Kozioł-Rachwał,M. Szpytma,W. Janus,B. Kurowska,S. Kret,M. Gryglas-Borysiewicz,B. Koopmans,H. J. M. Swagten###
(200931, 200932)
 However, we demonstrate that in CoO the anisotropy should necessarilydepend on the magnetic field, which is shown by the spin Hall magnetoresistanceof the CoO  Pt device.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 240, 'K', 1],[35.0, 7.0, 'T', 1],[66.0, 30, 'T', 1]

Pt
###Antiferromagnetic Hysteresis above the Spin Flop Field|M. J. Grzybowski,C. F. Schippers,O. Gomonay,K. Rubi,M. E. Bal,U. Zeitler,A. Kozioł-Rachwał,M. Szpytma,W. Janus,B. Kurowska,S. Kret,M. Gryglas-Borysiewicz,B. Koopmans,H. J. M. Swagten###
(200935, 200935)
 However, we demonstrate that in CoO the anisotropy should necessarilydepend on the magnetic field, which is shown by the spin Hall magnetoresistanceof the CoO  Pt device.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 240, 'K', 1],[32.0, 7.0, 'T', 1],[63.0, 30, 'T', 1]

N
###Antiferromagnetic Hysteresis above the Spin Flop Field|M. J. Grzybowski,C. F. Schippers,O. Gomonay,K. Rubi,M. E. Bal,U. Zeitler,A. Kozioł-Rachwał,M. Szpytma,W. Janus,B. Kurowska,S. Kret,M. Gryglas-Borysiewicz,B. Koopmans,H. J. M. Swagten###
(200944, 200944)
 Below the Neel temperature CoO reveals a spin-floptransition at 240 K at 7.0 T, above which a hysteresis in the angulardependence of magnetoresistance unexpectedly persists up to 30 T.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 240, 'K', 0],[23.0, 7.0, 'T', 0],[54.0, 30, 'T', 0]

CoO
###Antiferromagnetic Hysteresis above the Spin Flop Field|M. J. Grzybowski,C. F. Schippers,O. Gomonay,K. Rubi,M. E. Bal,U. Zeitler,A. Kozioł-Rachwał,M. Szpytma,W. Janus,B. Kurowska,S. Kret,M. Gryglas-Borysiewicz,B. Koopmans,H. J. M. Swagten###
(200949, 200950)
 Below the Neel temperature CoO reveals a spin-floptransition at 240 K at 7.0 T, above which a hysteresis in the angulardependence of magnetoresistance unexpectedly persists up to 30 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 240, 'K', 0],[17.0, 7.0, 'T', 0],[48.0, 30, 'T', 0]

Cu
###Planar Hall effect in Cu intercalated PdTe$_2$|Sonika,M. K. Hooda,Shailja Sharma,C. S. Yadav###
(201067, 201067)
Planar Hall effect in Cu intercalated PdTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PdTe2
###Planar Hall effect in Cu intercalated PdTe$_2$|Sonika,M. K. Hooda,Shailja Sharma,C. S. Yadav###
(201071, 201073)
Planar Hall effect in Cu intercalated PdTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Planar Hall effect in Cu intercalated PdTe$_2$|Sonika,M. K. Hooda,Shailja Sharma,C. S. Yadav###
(201094, 201094)
 We present the Planar Hall effect studies on the Cu intercalated type-IIDirac semimetal PdTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Planar Hall effect in Cu intercalated PdTe$_2$|Sonika,M. K. Hooda,Shailja Sharma,C. S. Yadav###
(201100, 201101)
 We present the Planar Hall effect studies on the Cu intercalated type-IIDirac semimetal PdTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PdTe2
###Planar Hall effect in Cu intercalated PdTe$_2$|Sonika,M. K. Hooda,Shailja Sharma,C. S. Yadav###
(201108, 201110)
 We present the Planar Hall effect studies on the Cu intercalated type-IIDirac semimetal PdTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Planar Hall effect in Cu intercalated PdTe$_2$|Sonika,M. K. Hooda,Shailja Sharma,C. S. Yadav###
(201228, 201229)
 Our study suggest that for the type-II Dirac semimetal materialswith positive longitudinal magnetoresistance, the origin of Planar Hall effectcannot be asserted with certainty to the topological or non-topological withouttaking into account the anisotropy of Fermi surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CIP
###Current-in-plane magnetoresistance in chiral-molecule/ferromagnetic metal bilayer due to thermally induced spin polarization|Kouta Kondou,Masanobu Shiga,Shoya Sakamoto,Hiroyuki Inuzuka,Atsuko Nihonyanagi,Fumito Araoka,Masaki Kobayashi,Shinji Miwa,Daigo Miyajima,YoshiChika Otani###
(201360, 201362)
 We report chirality-induced current-in-plane magnetoresistance (CIP-MR) inchiral molecule/ferromagnetic metal bilayer at room temperature.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CPP
###Current-in-plane magnetoresistance in chiral-molecule/ferromagnetic metal bilayer due to thermally induced spin polarization|Kouta Kondou,Masanobu Shiga,Shoya Sakamoto,Hiroyuki Inuzuka,Atsuko Nihonyanagi,Fumito Araoka,Masaki Kobayashi,Shinji Miwa,Daigo Miyajima,YoshiChika Otani###
(201409, 201411)
 The previouslyreported chiralityinduced current-perpendicular-to-plane magnetoresistance(CPP-MR) originates from the chiral induced spin-selectivity (CISS) effect thatneeds charge-current passing through the molecule.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(CISS)
###Current-in-plane magnetoresistance in chiral-molecule/ferromagnetic metal bilayer due to thermally induced spin polarization|Kouta Kondou,Masanobu Shiga,Shoya Sakamoto,Hiroyuki Inuzuka,Atsuko Nihonyanagi,Fumito Araoka,Masaki Kobayashi,Shinji Miwa,Daigo Miyajima,YoshiChika Otani###
(201431, 201436)
 The previouslyreported chiralityinduced current-perpendicular-to-plane magnetoresistance(CPP-MR) originates from the chiral induced spin-selectivity (CISS) effect thatneeds charge-current passing through the molecule.
Featurization successful!
0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Current-in-plane magnetoresistance in chiral-molecule/ferromagnetic metal bilayer due to thermally induced spin polarization|Kouta Kondou,Masanobu Shiga,Shoya Sakamoto,Hiroyuki Inuzuka,Atsuko Nihonyanagi,Fumito Araoka,Masaki Kobayashi,Shinji Miwa,Daigo Miyajima,YoshiChika Otani###
(201458, 201458)
 In contrast, the observedCIP-MR in the present study requires no bias charge current through themolecule.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CIP
###Current-in-plane magnetoresistance in chiral-molecule/ferromagnetic metal bilayer due to thermally induced spin polarization|Kouta Kondou,Masanobu Shiga,Shoya Sakamoto,Hiroyuki Inuzuka,Atsuko Nihonyanagi,Fumito Araoka,Masaki Kobayashi,Shinji Miwa,Daigo Miyajima,YoshiChika Otani###
(201468, 201470)
 In contrast, the observedCIP-MR in the present study requires no bias charge current through themolecule.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CIP
###Current-in-plane magnetoresistance in chiral-molecule/ferromagnetic metal bilayer due to thermally induced spin polarization|Kouta Kondou,Masanobu Shiga,Shoya Sakamoto,Hiroyuki Inuzuka,Atsuko Nihonyanagi,Fumito Araoka,Masaki Kobayashi,Shinji Miwa,Daigo Miyajima,YoshiChika Otani###
(201509, 201511)
 The temperature dependence of CIP-MR suggests thermally inducedspin-polarization in the chiral molecules is the key for the observed MR.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr
###Disorder-induced linear magnetoresistance in Sr-doped Bi2Se3 thin films|Jiayuan Hu,Wenxiang Jiang,Guohua Wang,Yunlong Li,Jiangtao Wang,Jinlong Jiao,Qi Lu,Chenhang Xu,Wentao Zhang,Jie Ma,Dong Qian###
(201569, 201569)
Disorder-induced linear magnetoresistance in Sr-doped Bi2Se3 thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Se3
###Disorder-induced linear magnetoresistance in Sr-doped Bi2Se3 thin films|Jiayuan Hu,Wenxiang Jiang,Guohua Wang,Yunlong Li,Jiangtao Wang,Jinlong Jiao,Qi Lu,Chenhang Xu,Wentao Zhang,Jie Ma,Dong Qian###
(201573, 201576)
Disorder-induced linear magnetoresistance in Sr-doped Bi2Se3 thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr
###Disorder-induced linear magnetoresistance in Sr-doped Bi2Se3 thin films|Jiayuan Hu,Wenxiang Jiang,Guohua Wang,Yunlong Li,Jiangtao Wang,Jinlong Jiao,Qi Lu,Chenhang Xu,Wentao Zhang,Jie Ma,Dong Qian###
(201583, 201583)
 Sr-doped Bi2Se3 thin films was known as a potential candidate of topologicalsuperconductor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Se3
###Disorder-induced linear magnetoresistance in Sr-doped Bi2Se3 thin films|Jiayuan Hu,Wenxiang Jiang,Guohua Wang,Yunlong Li,Jiangtao Wang,Jinlong Jiao,Qi Lu,Chenhang Xu,Wentao Zhang,Jie Ma,Dong Qian###
(201587, 201590)
 Sr-doped Bi2Se3 thin films was known as a potential candidate of topologicalsuperconductor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Se3
###Disorder-induced linear magnetoresistance in Sr-doped Bi2Se3 thin films|Jiayuan Hu,Wenxiang Jiang,Guohua Wang,Yunlong Li,Jiangtao Wang,Jinlong Jiao,Qi Lu,Chenhang Xu,Wentao Zhang,Jie Ma,Dong Qian###
(201628, 201631)
 The magnetoresistance (MR) of SrxBi2Se3 films with variousdoping concentrations x<missing VAR> were found to be dominated by weak antilocalization(WAL) at low magnetic fields, whereas the classical MR, which originallydominated the MR, was almost completely suppressed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Disorder-induced linear magnetoresistance in Sr-doped Bi2Se3 thin films|Jiayuan Hu,Wenxiang Jiang,Guohua Wang,Yunlong Li,Jiangtao Wang,Jinlong Jiao,Qi Lu,Chenhang Xu,Wentao Zhang,Jie Ma,Dong Qian###
(201664, 201664)
 The magnetoresistance (MR) of SrxBi2Se3 films with variousdoping concentrations x<missing VAR> were found to be dominated by weak antilocalization(WAL) at low magnetic fields, whereas the classical MR, which originallydominated the MR, was almost completely suppressed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Disorder-induced linear magnetoresistance in Sr-doped Bi2Se3 thin films|Jiayuan Hu,Wenxiang Jiang,Guohua Wang,Yunlong Li,Jiangtao Wang,Jinlong Jiao,Qi Lu,Chenhang Xu,Wentao Zhang,Jie Ma,Dong Qian###
(201710, 201710)
 In contrast, the MR of allsamples has been observed to be dominated by linear magnetoresistance (LMR) athigh magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr
###Disorder-induced linear magnetoresistance in Sr-doped Bi2Se3 thin films|Jiayuan Hu,Wenxiang Jiang,Guohua Wang,Yunlong Li,Jiangtao Wang,Jinlong Jiao,Qi Lu,Chenhang Xu,Wentao Zhang,Jie Ma,Dong Qian###
(201826, 201826)
 Thisindicates that LMR originates from mobility fluctuation induced by Sr dopantatoms in doped Bi2Se3 films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Se3
###Disorder-induced linear magnetoresistance in Sr-doped Bi2Se3 thin films|Jiayuan Hu,Wenxiang Jiang,Guohua Wang,Yunlong Li,Jiangtao Wang,Jinlong Jiao,Qi Lu,Chenhang Xu,Wentao Zhang,Jie Ma,Dong Qian###
(201837, 201840)
 Thisindicates that LMR originates from mobility fluctuation induced by Sr dopantatoms in doped Bi2Se3 films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Bilinear magnetoresistance in topological insulators: role of magnetic disorder|A. N. Zarezad,A. Dyrdał###
(202029, 202029)
 We show that the presence of magnetic impurities remarkablymodifies the BMR signal.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Bilinear magnetoresistance in topological insulators: role of magnetic disorder|A. N. Zarezad,A. Dyrdał###
(202036, 202036)
 In general, scattering on magnetic impurities reducesmagnitude of BMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Bilinear magnetoresistance in topological insulators: role of magnetic disorder|A. N. Zarezad,A. Dyrdał###
(202056, 202056)
 In general, scattering on magnetic impurities reducesmagnitude of BMR.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Bilinear magnetoresistance in topological insulators: role of magnetic disorder|A. N. Zarezad,A. Dyrdał###
(202085, 202085)
 Apart from this, an additional modulation of the angulardependence of BMR appears when the spin-dependent component of the impuritypotential dominates the scalar one.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZrTe2
###Magnetotransport due to conductivity fluctuations in non-magnetic ZrTe2 nanoplates|Jie Wang,Yihao Wang,Min Wu,Junbo Li,Shaopeng Miao,Qingyi Hou,Yun Li,Jianhui Zhou,Xiangde Zhu,Yimin Xiong,Wei Ning,Mingliang Tian###
(202143, 202145)
Magnetotransport due to conductivity fluctuations in non-magnetic ZrTe2 nanoplates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZrTe2
###Magnetotransport due to conductivity fluctuations in non-magnetic ZrTe2 nanoplates|Jie Wang,Yihao Wang,Min Wu,Junbo Li,Shaopeng Miao,Qingyi Hou,Yun Li,Jianhui Zhou,Xiangde Zhu,Yimin Xiong,Wei Ning,Mingliang Tian###
(202211, 202213)
 Here, we performed systematic magnetotransport measurements onmechanical exfoliation prepared ZrTe2 nanoplates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Zr
###Magnetotransport due to conductivity fluctuations in non-magnetic ZrTe2 nanoplates|Jie Wang,Yihao Wang,Min Wu,Junbo Li,Shaopeng Miao,Qingyi Hou,Yun Li,Jianhui Zhou,Xiangde Zhu,Yimin Xiong,Wei Ning,Mingliang Tian###
(202283, 202283)
 We revealed that the negativelongitudinal magnetoresistivity observed at high field region in the presenceof parallel electric and magnetic fields could stem from the conductivityfluctuations due to the excess Zr in the nanoplates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magnetotransport due to conductivity fluctuations in non-magnetic ZrTe2 nanoplates|Jie Wang,Yihao Wang,Min Wu,Junbo Li,Shaopeng Miao,Qingyi Hou,Yun Li,Jianhui Zhou,Xiangde Zhu,Yimin Xiong,Wei Ning,Mingliang Tian###
(202292, 202292)
 In addition, theparametric plot, the planar Hall resistivity as function of the in-planeanisotropic magnetoresistivity, has an ellipse-shaped pattern with shiftedorbital center, which further strengthen the evidence for the conductivityfluctuations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFeB/MgO
###Interplay of symmetry-conserved tunneling, interfacial oxidation and perpendicular magnetic anisotropy in CoFeB/MgO-based junctions|Pravin Khanal,Bowei Zhou,Hamid Almasi,Ali Habiboglu,Magda Andrade,Jack O'Brien,Arthur Enriquez,Carter Eckel,Christopher Mastrangelo,Wei-Gang Wang###
(202430, 202435)
Interplay of symmetry-conserved tunneling, interfacial oxidation and perpendicular magnetic anisotropy in CoFeB/MgO-based junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

MgO
###Interplay of symmetry-conserved tunneling, interfacial oxidation and perpendicular magnetic anisotropy in CoFeB/MgO-based junctions|Pravin Khanal,Bowei Zhou,Hamid Almasi,Ali Habiboglu,Magda Andrade,Jack O'Brien,Arthur Enriquez,Carter Eckel,Christopher Mastrangelo,Wei-Gang Wang###
(202460, 202461)
 The interfacial oxidation level and thermodynamic properties of the MgO-basedperpendicular magnetic tunneling junctions are investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Interplay of symmetry-conserved tunneling, interfacial oxidation and perpendicular magnetic anisotropy in CoFeB/MgO-based junctions|Pravin Khanal,Bowei Zhou,Hamid Almasi,Ali Habiboglu,Magda Andrade,Jack O'Brien,Arthur Enriquez,Carter Eckel,Christopher Mastrangelo,Wei-Gang Wang###
(202498, 202499)
 Thesymmetry-conserved tunneling effect depends sensitively on the MgO adatomenergy during the R<missing VAR>F sputtering, as well as the thermal stability of thestructure during the post-growth thermal annealing.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Interplay of symmetry-conserved tunneling, interfacial oxidation and perpendicular magnetic anisotropy in CoFeB/MgO-based junctions|Pravin Khanal,Bowei Zhou,Hamid Almasi,Ali Habiboglu,Magda Andrade,Jack O'Brien,Arthur Enriquez,Carter Eckel,Christopher Mastrangelo,Wei-Gang Wang###
(202511, 202511)
 Thesymmetry-conserved tunneling effect depends sensitively on the MgO adatomenergy during the R<missing VAR>F sputtering, as well as the thermal stability of thestructure during the post-growth thermal annealing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe2O3/Pt
###Observation of the unidirectional magnetoresistance in antiferromagnetic insulator Fe2O3/Pt bilayers|Yihong Fan,Pengxiang Zhang,Jiahao Han,Yang Lv,Luqiao Liu,Jian-Ping Wang###
(202689, 202694)
Observation of the unidirectional magnetoresistance in antiferromagnetic insulator Fe2O3/Pt bilayers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

U
###Observation of the unidirectional magnetoresistance in antiferromagnetic insulator Fe2O3/Pt bilayers|Yihong Fan,Pengxiang Zhang,Jiahao Han,Yang Lv,Luqiao Liu,Jian-Ping Wang###
(202704, 202704)
 Unidirectional magnetoresistance (UMR) has been observed in a variety ofstacks with ferromagnetic/spin Hall material bilayer structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Observation of the unidirectional magnetoresistance in antiferromagnetic insulator Fe2O3/Pt bilayers|Yihong Fan,Pengxiang Zhang,Jiahao Han,Yang Lv,Luqiao Liu,Jian-Ping Wang###
(202741, 202741)
 In this work,we reported UMR in antiferromagnetic insulator Fe2O3/Pt structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

U
###Observation of the unidirectional magnetoresistance in antiferromagnetic insulator Fe2O3/Pt bilayers|Yihong Fan,Pengxiang Zhang,Jiahao Han,Yang Lv,Luqiao Liu,Jian-Ping Wang###
(202753, 202753)
 In this work,we reported UMR in antiferromagnetic insulator Fe2O3/Pt structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe2O3/Pt
###Observation of the unidirectional magnetoresistance in antiferromagnetic insulator Fe2O3/Pt bilayers|Yihong Fan,Pengxiang Zhang,Jiahao Han,Yang Lv,Luqiao Liu,Jian-Ping Wang###
(202763, 202768)
 In this work,we reported UMR in antiferromagnetic insulator Fe2O3/Pt structure.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

U
###Observation of the unidirectional magnetoresistance in antiferromagnetic insulator Fe2O3/Pt bilayers|Yihong Fan,Pengxiang Zhang,Jiahao Han,Yang Lv,Luqiao Liu,Jian-Ping Wang###
(202775, 202775)
 The UMR hasa negative value, which is related to interfacial Rashba coupling and bandsplitting.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

U
###Observation of the unidirectional magnetoresistance in antiferromagnetic insulator Fe2O3/Pt bilayers|Yihong Fan,Pengxiang Zhang,Jiahao Han,Yang Lv,Luqiao Liu,Jian-Ping Wang###
(202828, 202828)
 Thickness-dependent measurement reveals a potential competitionbetween UMR and the unidirectional spin Hall magnetoresistance (USMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

US
###Observation of the unidirectional magnetoresistance in antiferromagnetic insulator Fe2O3/Pt bilayers|Yihong Fan,Pengxiang Zhang,Jiahao Han,Yang Lv,Luqiao Liu,Jian-Ping Wang###
(202845, 202846)
 Thickness-dependent measurement reveals a potential competitionbetween UMR and the unidirectional spin Hall magnetoresistance (USMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

U
###Observation of the unidirectional magnetoresistance in antiferromagnetic insulator Fe2O3/Pt bilayers|Yihong Fan,Pengxiang Zhang,Jiahao Han,Yang Lv,Luqiao Liu,Jian-Ping Wang###
(202865, 202865)
 Thiswork revealed the existence of UMR in antiferromagnetic insulators/heavy metalbilayers and broadens the way for the application of antiferromagnet-basedspintronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Electronic Transport in a Topological Semimetal WTe2 Single Crystal|A. N. Perevalova,S. V. Naumov,V. V. Chistyakov,E. B. Marchenkova,B. M. Fominykh,V. V. Marchenkov###
(202928, 202930)
Electronic Transport in a Topological Semimetal WTe2 Single Crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 12, 'to', 1],[57.0, 200, 'K', 1],[68.0, 9, 'T', 1]

WTe2
###Electronic Transport in a Topological Semimetal WTe2 Single Crystal|A. N. Perevalova,S. V. Naumov,V. V. Chistyakov,E. B. Marchenkova,B. M. Fominykh,V. V. Marchenkov###
(202968, 202970)
 Electrical resistivity, magnetoresistivity, and the Hall effect have beenstudied in a topological semimetal WTe2 single crystal in the temperature rangefrom 12 to 200 K under magnetic fields up to 9 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 12, 'to', 0],[17.0, 200, 'K', 0],[28.0, 9, 'T', 0]

H
###Modulation of Hanle magnetoresistance in an ultrathin platinum film by ionic gating|Yuu Maruyama,Ryo Ohshima,Ei Shigematsu,Yuichiro Ando,Masashi Shiraishi###
(203194, 203194)
 Hanle magnetoresistance (HMR) is a type of magnetoresistance where interplayof the spin Hall effect, Hanle-type spin precession, and spin-dependentscattering at the top/bottom surfaces in a heavy metal controls the effect.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Modulation of Hanle magnetoresistance in an ultrathin platinum film by ionic gating|Yuu Maruyama,Ryo Ohshima,Ei Shigematsu,Yuichiro Ando,Masashi Shiraishi###
(203268, 203268)
 Inthis study, we modulate HMR in ultrathin Pt by ionic gating, where the surfaceRashba field created by a strong electric field at the interface between theionic gate and Pt plays the dominant role in the modulation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Modulation of Hanle magnetoresistance in an ultrathin platinum film by ionic gating|Yuu Maruyama,Ryo Ohshima,Ei Shigematsu,Yuichiro Ando,Masashi Shiraishi###
(203280, 203280)
 Inthis study, we modulate HMR in ultrathin Pt by ionic gating, where the surfaceRashba field created by a strong electric field at the interface between theionic gate and Pt plays the dominant role in the modulation.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Modulation of Hanle magnetoresistance in an ultrathin platinum film by ionic gating|Yuu Maruyama,Ryo Ohshima,Ei Shigematsu,Yuichiro Ando,Masashi Shiraishi###
(203288, 203288)
 Inthis study, we modulate HMR in ultrathin Pt by ionic gating, where the surfaceRashba field created by a strong electric field at the interface between theionic gate and Pt plays the dominant role in the modulation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Modulation of Hanle magnetoresistance in an ultrathin platinum film by ionic gating|Yuu Maruyama,Ryo Ohshima,Ei Shigematsu,Yuichiro Ando,Masashi Shiraishi###
(203337, 203337)
 Inthis study, we modulate HMR in ultrathin Pt by ionic gating, where the surfaceRashba field created by a strong electric field at the interface between theionic gate and Pt plays the dominant role in the modulation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Sr2CuO6
###Transport properties of very overdoped nonsuperconducting Bi2Sr2CuO6+d thin films|H. Raffy,Z. Z. Li,P. Auban-Senzier###
(203410, 203416)
Transport properties of very overdoped nonsuperconducting Bi2Sr2CuO6d<missing VAR> thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5454545454545454,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.09090909090909091,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 20, 'to', 2],[68.0, 300, 'K', 2],[107.0, 3, ',', 2]

Bi2Sr2CuO6
###Transport properties of very overdoped nonsuperconducting Bi2Sr2CuO6+d thin films|H. Raffy,Z. Z. Li,P. Auban-Senzier###
(203458, 203464)
 The transport properties, resistance, Hall effect, and low T<missing VAR>magnetoresistance for very oxygen overdoped nonsuperconducting Bi2Sr2CuO6d<missing VAR>(Bi2201) thin films are reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5454545454545454,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.09090909090909091,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 20, 'to', 1],[20.0, 300, 'K', 1],[59.0, 3, ',', 1]

(Bi2201)
###Transport properties of very overdoped nonsuperconducting Bi2Sr2CuO6+d thin films|H. Raffy,Z. Z. Li,P. Auban-Senzier###
(203468, 203471)
 The transport properties, resistance, Hall effect, and low T<missing VAR>magnetoresistance for very oxygen overdoped nonsuperconducting Bi2Sr2CuO6d<missing VAR>(Bi2201) thin films are reported.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 20, 'to', 1],[13.0, 300, 'K', 1],[52.0, 3, ',', 1]

In
###Transport properties of very overdoped nonsuperconducting Bi2Sr2CuO6+d thin films|H. Raffy,Z. Z. Li,P. Auban-Senzier###
(203548, 203548)
 In addition,this prediction is reinforced by the analysis of the transverse and thelongitudinal low T<missing VAR> magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 20, 'to', 1],[64.0, 300, 'K', 1],[25.0, 3, ',', 1]

N
###Transport across junctions of altermagnets with normal metals and ferromagnets|Sachchidanand Das,Dhavala Suri,Abhiram Soori###
(203785, 203785)
 We study (i) altermagnet-normal metal(NM) and (ii) altermagnet-ferromagnet (FM) junctions, with the aim to quantifytransport properties such as conductivity and magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Transport across junctions of altermagnets with normal metals and ferromagnets|Sachchidanand Das,Dhavala Suri,Abhiram Soori###
(203800, 203800)
 We study (i) altermagnet-normal metal(NM) and (ii) altermagnet-ferromagnet (FM) junctions, with the aim to quantifytransport properties such as conductivity and magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Transport across junctions of altermagnets with normal metals and ferromagnets|Sachchidanand Das,Dhavala Suri,Abhiram Soori###
(203875, 203875)
 Themagnetoresistance of the AM<missing VAR>-FM<missing VAR> junction switches sign when AM<missing VAR> is rotated by90circ, -a feature unique to the altermagnetic phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YbNiAl
###Magnetic properites of the Heavy Fermion Antiferromagnets YbNiAl and YbPtAl|J. Diehl,H. Davideit,S. Klimm,S. Horn,U. Tegel,C. Geibel,F. Steglich###
(203938, 203940)
Magnetic properites of the Heavy Fermion Antiferromagnets YbNiAl and YbPtAl.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YbPtAl
###Magnetic properites of the Heavy Fermion Antiferromagnets YbNiAl and YbPtAl|J. Diehl,H. Davideit,S. Klimm,S. Horn,U. Tegel,C. Geibel,F. Steglich###
(203944, 203946)
Magnetic properites of the Heavy Fermion Antiferromagnets YbNiAl and YbPtAl.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YbNiAl
###Magnetic properites of the Heavy Fermion Antiferromagnets YbNiAl and YbPtAl|J. Diehl,H. Davideit,S. Klimm,S. Horn,U. Tegel,C. Geibel,F. Steglich###
(203986, 203988)
 Measurements of electrical resistivity and Hall effect as a function ofmagnetic field on the Heavy Fermion Systems YbNiAl and YbPtAl are presented.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YbPtAl
###Magnetic properites of the Heavy Fermion Antiferromagnets YbNiAl and YbPtAl|J. Diehl,H. Davideit,S. Klimm,S. Horn,U. Tegel,C. Geibel,F. Steglich###
(203992, 203994)
 Measurements of electrical resistivity and Hall effect as a function ofmagnetic field on the Heavy Fermion Systems YbNiAl and YbPtAl are presented.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Magnetic properites of the Heavy Fermion Antiferromagnets YbNiAl and YbPtAl|J. Diehl,H. Davideit,S. Klimm,S. Horn,U. Tegel,C. Geibel,F. Steglich###
(204043, 204043)
 Scaling behavior of the magnetoresistance above T<missing VAR>N suggeststhat the paramagnetic regime for YbNiAl can be described in terms of a singleion Kondo effect.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YbNiAl
###Magnetic properites of the Heavy Fermion Antiferromagnets YbNiAl and YbPtAl|J. Diehl,H. Davideit,S. Klimm,S. Horn,U. Tegel,C. Geibel,F. Steglich###
(204058, 204060)
 Scaling behavior of the magnetoresistance above T<missing VAR>N suggeststhat the paramagnetic regime for YbNiAl can be described in terms of a singleion Kondo effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La
###Magnetoresistance of the Double-Exchange Model in Infinite Dimension|Nobuo Furukawa###
(204204, 204204)
 Magnetoresistance in lightly doped (La,Sr)MnO3 is reproduced verywell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr
###Magnetoresistance of the Double-Exchange Model in Infinite Dimension|Nobuo Furukawa###
(204206, 204206)
 Magnetoresistance in lightly doped (La,Sr)MnO3 is reproduced verywell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnO3
###Magnetoresistance of the Double-Exchange Model in Infinite Dimension|Nobuo Furukawa###
(204208, 204210)
 Magnetoresistance in lightly doped (La,Sr)MnO3 is reproduced verywell.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Universal Spin-Induced Magnetoresistance in the Variable-Range Hopping Regime|Yigal Meir###
(204311, 204311)
 The magnetoresistance in the variable-range hopping regime due to Zeemanspin-splitting and intra-impurity interactions is calculated analytically andshown to be a universal function of mu H / kT log R<missing VAR>.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La
###Magnetic and Transport Properties of (La,Sr)MnO$_3$|Nobuo Furukawa###
(204400, 204400)
Magnetic and Transport Properties of (La,Sr)MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr
###Magnetic and Transport Properties of (La,Sr)MnO$_3$|Nobuo Furukawa###
(204402, 204402)
Magnetic and Transport Properties of (La,Sr)MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnO3
###Magnetic and Transport Properties of (La,Sr)MnO$_3$|Nobuo Furukawa###
(204404, 204406)
Magnetic and Transport Properties of (La,Sr)MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La
###Magnetic and Transport Properties of (La,Sr)MnO$_3$|Nobuo Furukawa###
(204436, 204436)
 Magnetic and transport properties of the perovskite-type 3d<missing VAR>transition-metal oxide (La,Sr)MnO3 are theoretically studied using thedouble-exchange model in infinite dimension.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr
###Magnetic and Transport Properties of (La,Sr)MnO$_3$|Nobuo Furukawa###
(204438, 204438)
 Magnetic and transport properties of the perovskite-type 3d<missing VAR>transition-metal oxide (La,Sr)MnO3 are theoretically studied using thedouble-exchange model in infinite dimension.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnO3
###Magnetic and Transport Properties of (La,Sr)MnO$_3$|Nobuo Furukawa###
(204440, 204442)
 Magnetic and transport properties of the perovskite-type 3d<missing VAR>transition-metal oxide (La,Sr)MnO3 are theoretically studied using thedouble-exchange model in infinite dimension.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Spin excitations in ferromagnetic manganites|J. Loos,H. Fehske###
(204701, 204701)
 An effective one-band Hamiltonian for colossal-magnetoresistance (CMR)manganites is constructed and the spin excitations are determined.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 0.2, 'eV', 1]

Sr
###Positive magnetoresistance and orbital ordering in La(1-x)Sr(x)MnO(3)|M. Paraskevopoulos,J. Hemberger,A. Loidl,A. A. Mukhin,V. Yu. Ivanov,A. M. Balbashov###
(205135, 205135)
Positive magnetoresistance and orbital ordering in La(1-x)Sr(x)MnO(3).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 0.1, '<', 2]

Sr
###Positive magnetoresistance and orbital ordering in La(1-x)Sr(x)MnO(3)|M. Paraskevopoulos,J. Hemberger,A. Loidl,A. A. Mukhin,V. Yu. Ivanov,A. M. Balbashov###
(205171, 205171)
 We report on detailed transprort measurements of single crystallineLa(1-x)Sr(x)MnO(3) (x<missing VAR><0.2).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 0.1, '<', 1]

NaCo2O4
###Large Thermopower in a Layered Oxide NaCo_2O_4|I. Terasaki,Y. Sasago,K. Uchinokura###
(205280, 205284)
Large Thermopower in a Layered Oxide NaCo2O4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NaCo2O4
###Large Thermopower in a Layered Oxide NaCo_2O_4|I. Terasaki,Y. Sasago,K. Uchinokura###
(205295, 205299)
 A transition-metal oxide NaCo2O4 is a layered oxide in which CoO2 and Naalternately stack along the c<missing VAR> axis.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoO2
###Large Thermopower in a Layered Oxide NaCo_2O_4|I. Terasaki,Y. Sasago,K. Uchinokura###
(205313, 205315)
 A transition-metal oxide NaCo2O4 is a layered oxide in which CoO2 and Naalternately stack along the c<missing VAR> axis.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Na
###Large Thermopower in a Layered Oxide NaCo_2O_4|I. Terasaki,Y. Sasago,K. Uchinokura###
(205319, 205319)
 A transition-metal oxide NaCo2O4 is a layered oxide in which CoO2 and Naalternately stack along the c<missing VAR> axis.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Te3
###Large Thermopower in a Layered Oxide NaCo_2O_4|I. Terasaki,Y. Sasago,K. Uchinokura###
(205378, 205381)
 Recently we have found that this compoundshows unusually large thermopower with low resistivity, which is comparable tothose of Bi2Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NaCo2O4
###Large Thermopower in a Layered Oxide NaCo_2O_4|I. Terasaki,Y. Sasago,K. Uchinokura###
(205426, 205430)
 The negative transverse magnetoresistance and the stronglytemperature-dependent Hall coefficient suggest that electron correlationdominates the conduction mechanism in NaCo2O4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs/AlGaAs
###Anisotropic Transport of Two-Dimensional Holes in High Landau Levels|M. Shayegan,H. C. Manoharan,S. J. Papadakis,E. P. DePoortere###
(205491, 205496)
 Magnetoresistance data taken along [bar233] and [01bar1] directionsin a GaAs/AlGaAs two-dimensional hole sample with van der Pauw geometry exhibitsignificant anisotropy at half-integer filling factors.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

SiGe
###Universal Behaviour of Metal-Insulator Transitions in the p-SiGe System|P. T. Coleridge,P. Zawadzki,A. S. Sachrajda,R. L. Williams,Y. Feng###
(205886, 205887)
Universal Behaviour of Metal-Insulator Transitions in the p<missing VAR>-SiGe System.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SiGe
###Universal Behaviour of Metal-Insulator Transitions in the p-SiGe System|P. T. Coleridge,P. Zawadzki,A. S. Sachrajda,R. L. Williams,Y. Feng###
(205908, 205909)
 Magnetoresistance measurements are presented for a strained p<missing VAR>-SiGe quantumwell sample where the density is varied through the B0 metal-insulatortransition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B0
###Universal Behaviour of Metal-Insulator Transitions in the p-SiGe System|P. T. Coleridge,P. Zawadzki,A. S. Sachrajda,R. L. Williams,Y. Feng###
(205932, 205933)
 Magnetoresistance measurements are presented for a strained p<missing VAR>-SiGe quantumwell sample where the density is varied through the B0 metal-insulatortransition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaMnO3
###Characterisation, Raman, Magnetic and Resistivity measurements in polycrystalline samples of LaMnO3 doped with Cd|J. Lopez,V. Dediu,P. Nozar,G. Ruani,C. Dionigi,F. C. Matacotta,C. Ferdeghini,G. Calestani###
(206022, 206025)
Characterisation, Raman, Magnetic and Resistivity measurements in polycrystalline samples of LaMnO3 doped with Cd.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cd
###Characterisation, Raman, Magnetic and Resistivity measurements in polycrystalline samples of LaMnO3 doped with Cd|J. Lopez,V. Dediu,P. Nozar,G. Ruani,C. Dionigi,F. C. Matacotta,C. Ferdeghini,G. Calestani###
(206031, 206031)
Characterisation, Raman, Magnetic and Resistivity measurements in polycrystalline samples of LaMnO3 doped with Cd.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La1-x
###Characterisation, Raman, Magnetic and Resistivity measurements in polycrystalline samples of LaMnO3 doped with Cd|J. Lopez,V. Dediu,P. Nozar,G. Ruani,C. Dionigi,F. C. Matacotta,C. Ferdeghini,G. Calestani###
(206054, 206057)
 We report a study of polycrystalline samples of the family La1-xCdxMnO3dwithdifferent percentage of Mn4 ions.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

MnO3
###Characterisation, Raman, Magnetic and Resistivity measurements in polycrystalline samples of LaMnO3 doped with Cd|J. Lopez,V. Dediu,P. Nozar,G. Ruani,C. Dionigi,F. C. Matacotta,C. Ferdeghini,G. Calestani###
(206059, 206061)
 We report a study of polycrystalline samples of the family La1-xCdxMnO3dwithdifferent percentage of Mn4 ions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn4
###Characterisation, Raman, Magnetic and Resistivity measurements in polycrystalline samples of LaMnO3 doped with Cd|J. Lopez,V. Dediu,P. Nozar,G. Ruani,C. Dionigi,F. C. Matacotta,C. Ferdeghini,G. Calestani###
(206071, 206072)
 We report a study of polycrystalline samples of the family La1-xCdxMnO3dwithdifferent percentage of Mn4 ions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ca
###Characterisation, Raman, Magnetic and Resistivity measurements in polycrystalline samples of LaMnO3 doped with Cd|J. Lopez,V. Dediu,P. Nozar,G. Ruani,C. Dionigi,F. C. Matacotta,C. Ferdeghini,G. Calestani###
(206140, 206140)
 Results are qualitatively similarto the ones found in Ca doped manganese perovskites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cd
###Characterisation, Raman, Magnetic and Resistivity measurements in polycrystalline samples of LaMnO3 doped with Cd|J. Lopez,V. Dediu,P. Nozar,G. Ruani,C. Dionigi,F. C. Matacotta,C. Ferdeghini,G. Calestani###
(206156, 206156)
  Key words Cd, manganese perovskites, magnetoresistance, Raman, magnetic,resistivity<missing PERIOD>
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs/GaAlAs
###First observation of Aharonov-Bohm cages in 2-D normal metal networks|Cecile Naud,Giancarlo Faini,Dominique Mailly###
(206386, 206391)
 We report on magnetoresistance transport measurements performed on abipartite tiling of rhombus in the GaAs/GaAlAs system.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Pr
###Terahertz radiation from magnetoresistive Pr$_{\text{0.7}}$Ca$_{\text{0.3}}$MnO$_{\text3}$ thin films|N. Kida,M. Tonouchi###
(206510, 206510)
Terahertz radiation from magnetoresistive Prtext0.7Catext0.3MnOtext3 thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 1, 'THz', 1]

Ca
###Terahertz radiation from magnetoresistive Pr$_{\text{0.7}}$Ca$_{\text{0.3}}$MnO$_{\text3}$ thin films|N. Kida,M. Tonouchi###
(206513, 206513)
Terahertz radiation from magnetoresistive Prtext0.7Catext0.3MnOtext3 thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 1, 'THz', 1]

MnO
###Terahertz radiation from magnetoresistive Pr$_{\text{0.7}}$Ca$_{\text{0.3}}$MnO$_{\text3}$ thin films|N. Kida,M. Tonouchi###
(206516, 206517)
Terahertz radiation from magnetoresistive Prtext0.7Catext0.3MnOtext3 thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 1, 'THz', 1]

Pr0.7Ca0.3MnO3
###Terahertz radiation from magnetoresistive Pr$_{\text{0.7}}$Ca$_{\text{0.3}}$MnO$_{\text3}$ thin films|N. Kida,M. Tonouchi###
(206592, 206598)
 Terahertz (T<missing VAR>Hz) radiation with its spectrum extending up to 1 THz has beenobserved by an illumination of femtosecond optical pulses to optical switchingdevices fabricated on magnetoresistive manganite thin films;Pr0.7Ca0.3MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 1, 'THz', 0]

Tc
###Effective Lorentz Force due to Small-angle Impurity Scattering: Magnetotransport in High-Tc Superconductors|C. M. Varma,Elihu Abrahams###
(206680, 206680)
Effective Lorentz Force due to Small-angle Impurity Scattering Magnetotransport in High-Tc Superconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CPP
###Theory of Angular Magnetoresistance in CPP spin valves|Daniel Huertas-Hernando,Gerrit E. W. Bauer,Yu. V. Nazarov###
(206999, 207001)
Theory of Angular Magnetoresistance in CPP spin valves.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CPP
###Theory of Angular Magnetoresistance in CPP spin valves|Daniel Huertas-Hernando,Gerrit E. W. Bauer,Yu. V. Nazarov###
(207014, 207016)
 The resistance of CPP spin valve is a continuous function of the angletheta  between the magnetizations of both ferromagnets.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CPP
###Theory of Angular Magnetoresistance in CPP spin valves|Daniel Huertas-Hernando,Gerrit E. W. Bauer,Yu. V. Nazarov###
(207085, 207087)
 We use the cicuittheory for non-collinear magnetoelectronics to compute the angularmagnetoresistance of CPP spin valves taking the spin accumulation in theferromagnetic layers into account.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ca(1-x)Y
###Magnetic polarons in Ca_(1-x)Y_xMnO_3|H. Aliaga,M. T. Causa,M. Tovar,B. Alascio###
(207296, 207302)
Magnetic polarons in Ca(1-x)Yx<missing VAR>MnO3.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

MnO3
###Magnetic polarons in Ca_(1-x)Y_xMnO_3|H. Aliaga,M. T. Causa,M. Tovar,B. Alascio###
(207304, 207306)
Magnetic polarons in Ca(1-x)Yx<missing VAR>MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ca(1-x)
###Magnetic polarons in Ca_(1-x)Y_xMnO_3|H. Aliaga,M. T. Causa,M. Tovar,B. Alascio###
(207325, 207330)
 Experimental evidence show that in the magnetoresistive manganite Ca(1-x)Yx<missing VAR>MnO3, ferromagnetic (FM) polarons arises in an antiferromagnetic (AF)background, as a result of the doping with Yttrium.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

Y
###Magnetic polarons in Ca_(1-x)Y_xMnO_3|H. Aliaga,M. T. Causa,M. Tovar,B. Alascio###
(207333, 207333)
 Experimental evidence show that in the magnetoresistive manganite Ca(1-x)Yx<missing VAR>MnO3, ferromagnetic (FM) polarons arises in an antiferromagnetic (AF)background, as a result of the doping with Yttrium.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnO3
###Magnetic polarons in Ca_(1-x)Y_xMnO_3|H. Aliaga,M. T. Causa,M. Tovar,B. Alascio###
(207335, 207337)
 Experimental evidence show that in the magnetoresistive manganite Ca(1-x)Yx<missing VAR>MnO3, ferromagnetic (FM) polarons arises in an antiferromagnetic (AF)background, as a result of the doping with Yttrium.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Magnetic polarons in Ca_(1-x)Y_xMnO_3|H. Aliaga,M. T. Causa,M. Tovar,B. Alascio###
(207343, 207343)
 Experimental evidence show that in the magnetoresistive manganite Ca(1-x)Yx<missing VAR>MnO3, ferromagnetic (FM) polarons arises in an antiferromagnetic (AF)background, as a result of the doping with Yttrium.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Magnetic polarons in Ca_(1-x)Y_xMnO_3|H. Aliaga,M. T. Causa,M. Tovar,B. Alascio###
(207359, 207359)
 Experimental evidence show that in the magnetoresistive manganite Ca(1-x)Yx<missing VAR>MnO3, ferromagnetic (FM) polarons arises in an antiferromagnetic (AF)background, as a result of the doping with Yttrium.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Magnetic polarons in Ca_(1-x)Y_xMnO_3|H. Aliaga,M. T. Causa,M. Tovar,B. Alascio###
(207408, 207408)
 This hypothesis issupported in this work by classical Monte Carlo (M<missing VAR>C) calculations performed ona model where FM<missing VAR> Double Exchange (DE) and AF Superexhange (SE) compite.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Magnetic polarons in Ca_(1-x)Y_xMnO_3|H. Aliaga,M. T. Causa,M. Tovar,B. Alascio###
(207424, 207424)
 This hypothesis issupported in this work by classical Monte Carlo (M<missing VAR>C) calculations performed ona model where FM<missing VAR> Double Exchange (DE) and AF Superexhange (SE) compite.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Magnetic polarons in Ca_(1-x)Y_xMnO_3|H. Aliaga,M. T. Causa,M. Tovar,B. Alascio###
(207439, 207439)
 This hypothesis issupported in this work by classical Monte Carlo (M<missing VAR>C) calculations performed ona model where FM<missing VAR> Double Exchange (DE) and AF Superexhange (SE) compite.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Magnetic polarons in Ca_(1-x)Y_xMnO_3|H. Aliaga,M. T. Causa,M. Tovar,B. Alascio###
(207444, 207444)
 This hypothesis issupported in this work by classical Monte Carlo (M<missing VAR>C) calculations performed ona model where FM<missing VAR> Double Exchange (DE) and AF Superexhange (SE) compite.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Effects of Spin Polarization on Electron Transport in Modulation Doped Cd(1-x)Mn(x)Te/Cd(1-y)Mg(y)Te:I Heterostructures|T. Andrearczyk,J. Jaroszynski,G. Karczewski,J. Wrobel,T. Wojtowicz,T. Dietl,E. Papis,E. Kami'nska,A. Piotrowska###
(207485, 207485)
Effects of Spin Polarization on Electron Transport in Modulation Doped Cd(1-x)Mn(x)Te/Cd(1-y)Mg(y)TeI Heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 2, 'D', 1]

Mg
###Effects of Spin Polarization on Electron Transport in Modulation Doped Cd(1-x)Mn(x)Te/Cd(1-y)Mg(y)Te:I Heterostructures|T. Andrearczyk,J. Jaroszynski,G. Karczewski,J. Wrobel,T. Wojtowicz,T. Dietl,E. Papis,E. Kami'nska,A. Piotrowska###
(207497, 207497)
Effects of Spin Polarization on Electron Transport in Modulation Doped Cd(1-x)Mn(x)Te/Cd(1-y)Mg(y)TeI Heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 2, 'D', 1]

TeI
###Effects of Spin Polarization on Electron Transport in Modulation Doped Cd(1-x)Mn(x)Te/Cd(1-y)Mg(y)Te:I Heterostructures|T. Andrearczyk,J. Jaroszynski,G. Karczewski,J. Wrobel,T. Wojtowicz,T. Dietl,E. Papis,E. Kami'nska,A. Piotrowska###
(207501, 207502)
Effects of Spin Polarization on Electron Transport in Modulation Doped Cd(1-x)Mn(x)Te/Cd(1-y)Mg(y)TeI Heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 2, 'D', 1]

H
###On the magnetotransport of 3D systems in quantizing magnetic field|M. V. Cheremisin###
(207744, 207744)
 The longitudinal,transverse and the Hall magnetoresistivities exhibit familiar 1/H-periodoscillations being universal functions of magnetic field and temperature.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 3, 'D', 2],[77.0, 3, 'D', 1]

As
###Spin-dependent electron transport through a ferromagnetic domain wall|J. Ohe,M. Yamamoto,T. Ohtsuki,K. Slevin###
(207875, 207875)
 As the strength of the domain wall magnetization is increased,negative magnetoresistance is also observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs/AlGaAs
###Radiation-induced oscillatory magnetoresistance as a sensitive probe of the zero-field spin splitting in high mobility GaAs/AlGaAs devices|R. G. Mani,J. H. Smet,K. von Klitzing,V. Narayanamurti,W. B. Johnson,V. Umansky###
(207950, 207955)
Radiation-induced oscillatory magnetoresistance as a sensitive probe of the zero-field spin splitting in high mobility GaAs/AlGaAs devices.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

C
###Lattice and superexchange effects in doped CMR manganites|Alexander Weisse,Holger Fehske###
(208112, 208112)
Lattice and superexchange effects in doped CMR manganites.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Lattice and superexchange effects in doped CMR manganites|Alexander Weisse,Holger Fehske###
(208162, 208162)
 We report on the influence of the lattice degrees of freedom on charge,orbital and spin correlations in colossal magnetoresistance (CMR) manganites.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Lattice and superexchange effects in doped CMR manganites|Alexander Weisse,Holger Fehske###
(208238, 208238)
For the weakly doped compounds we demonstrate that the electron-phonon couplingpromotes the trapping of charge carriers, the disappearance of the orbitalpolaron pattern and the breakdown of ferromagnetism at the CMR transition.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs/AlGaAs
###Giant magnetoresistance oscillations caused by cyclotron resonance harmonics|S. I. Dorozhkin###
(208468, 208473)
 For high-mobility two-dimensional electrons at a GaAs/AlGaAs heterojunction,we have studied, both experimentally and theoretically, the recently discoveredgiant magnetoresistance oscillations with nearly zero resistance in theoscillation minima which appear under microwave radiation.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

F
###Shot noise in a diffusive F-N-F spin valve|E. G. Mishchenko###
(208597, 208597)
Shot noise in a diffusive F-N-F spin valve.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Shot noise in a diffusive F-N-F spin valve|E. G. Mishchenko###
(208599, 208599)
Shot noise in a diffusive F-N-F spin valve.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Shot noise in a diffusive F-N-F spin valve|E. G. Mishchenko###
(208601, 208601)
Shot noise in a diffusive F-N-F spin valve.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V/Mn
###Strain selection of charge and orbital ordering patterns in half-doped manganites|M. J. Calderon,A. J. Millis,K. H. Ahn###
(208840, 208842)
 The strain energy contribution isfound to be of order 20-30 meV/Mn and in particular stabilizes the anomalouszig-zag chain order observed in many half-doped manganites.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Sm0.55Sr0.45MnO3
###Magnetotransport Coefficients of Sm0.55Sr0.45MnO3|R Suryanarayanan,V Gasumyants###
(209051, 209057)
Magnetotransport Coefficients of Sm0.55Sr0.45MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.09,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.11000000000000001,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 0, 'and', 1],[13.0, 1.5, 'T', 1],[24.0, 0.3, ',', 1],[29.0, 1.8, 'T', 1]

Sm0.55Sr0.45MnO3
###Magnetotransport Coefficients of Sm0.55Sr0.45MnO3|R Suryanarayanan,V Gasumyants###
(209107, 209113)
 Measurements of Seebeck effect in 0 and 1.5 T and Nernst coefficient in0.3,0.9 and 1.8 T as a function of temperature on a polycrystalline sampleSm0.55Sr0.45MnO3 are presented.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.09,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.11000000000000001,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 0, 'and', 0],[37.0, 1.5, 'T', 0],[26.0, 0.3, ',', 0],[21.0, 1.8, 'T', 0]

In
###Non-monotonic angular magnetoresistance in asymmetric spin valves|Jan Manschot,Arne Brataas,Gerrit E. W. Bauer###
(209242, 209242)
In contrast to common wisdom, this angular magnetoresistance is found to be notnecessarily a monotone function of the angle.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuO
###Metal-insulator transition in EuO|P. Sinjukow,W. Nolting###
(209346, 209347)
Metal-insulator transition in EuO.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Eu
###Metal-insulator transition in EuO|P. Sinjukow,W. Nolting###
(209370, 209370)
 It is shown that the spectacular metal-insulator transition in Eu-rich EuOcan be simulated within an extended Kondo lattice model.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuO
###Metal-insulator transition in EuO|P. Sinjukow,W. Nolting###
(209374, 209375)
 It is shown that the spectacular metal-insulator transition in Eu-rich EuOcan be simulated within an extended Kondo lattice model.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Metal-insulator transition in EuO|P. Sinjukow,W. Nolting###
(209477, 209477)
 The huge colossalmagnetoresistance (CMR) is calculated and discussed.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrFeO3
###Magnetism, Charge Order and Giant Magnetoresistance in SrFeO$_{3-δ}$ Single Crystals|A. Lebon,P. Adler,C. Bernhard,A. V. Boris,A. V. Pimenov,A. Maljuk,C. T. Lin,C. Ulrich,B. Keimer###
(209514, 209517)
Magnetism, Charge Order and Giant Magnetoresistance in SrFeO3- Single Crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrFeO3
###Magnetism, Charge Order and Giant Magnetoresistance in SrFeO$_{3-δ}$ Single Crystals|A. Lebon,P. Adler,C. Bernhard,A. V. Boris,A. V. Pimenov,A. Maljuk,C. T. Lin,C. Ulrich,B. Keimer###
(209537, 209540)
 The electronic and magnetic properties of SrFeO3-delta single crystalswith controlled oxygen content (0 leq delta leq 0.19) have been studiedsystematically by susceptibility, transport and spectroscopic techniques.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr2FeMoO6
###On the origin of magnetoresistance in Sr$_2$FeMoO$_6$|D. D. Sarma,Sugata Ray,K. Tanaka,A. Fujimori###
(209665, 209670)
On the origin of magnetoresistance in Sr2FeMoO6.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr2FeMoO6
###On the origin of magnetoresistance in Sr$_2$FeMoO$_6$|D. D. Sarma,Sugata Ray,K. Tanaka,A. Fujimori###
(209705, 209710)
 We report detailed magnetization (M) and magnetoresistance (MR) studieson a series of Sr2FeMoO6 samples with independent control on anti-sitedefect and grain boundary densities.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs/AlGaAs
###Observation of a node in the quantum oscillations induced by microwave radiation|Alexey E. Kovalev,Sergey A. Zvyagin,Clifford R. Bowers,John L. Reno,Jerry A. Simmons###
(209860, 209865)
 The microwave induced magnetoresistance in GaAs/AlGaAs heterostructure wasstudied at temperatures below 1K and frequencies in the range of 150-400 G<missing VAR>Hz.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[14.0, 1, 'K', 0]

C
###Entropy-Driven Reentrant Behavior in CMR Manganites|Nobuo Furukawa,Yukitoshi Motome,Naoto Nagaosa###
(210143, 210143)
Entropy-Driven Reentrant Behavior in CMR Manganites.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Entropy-Driven Reentrant Behavior in CMR Manganites|Nobuo Furukawa,Yukitoshi Motome,Naoto Nagaosa###
(210220, 210220)
 Inthe presence of randomness which pins charge order fluctuations, entropy-drivenreentrant behaviors will appear, which explains the typical temperaturedependence of the resistivity for CMR manganites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Entropy-Driven Reentrant Behavior in CMR Manganites|Nobuo Furukawa,Yukitoshi Motome,Naoto Nagaosa###
(210277, 210277)
 Inthe presence of randomness which pins charge order fluctuations, entropy-drivenreentrant behaviors will appear, which explains the typical temperaturedependence of the resistivity for CMR manganites.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe3O4
###The Role of Grain Boundaries in Determining the Transport Properties in Magnetite|David C. Mertens,W. Montfrooij,R. J. McQueeney,M. Yethiraj,J. M. Honig###
(210487, 210490)
 We present magnetoresistance and Hall-effect measurements on single crystalmagnetite Fe3O4 close to the Verwey transition Tv  123.8 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 123.8, 'K', 0]

GaAs
###Anisotropic positive magnetoresistance of a nonplanar 2D electron gas in a parallel magnetic field|A. V. Goran,A. A. Bykov,A. K. Bakarov,J. C. Portal###
(210654, 210655)
 We study the transport properties of a 2D electron gas in narrow GaAs quantumwells with AlAs/GaAs superlattice barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 2, 'D', 1],[10.0, 2, 'D', 0],[76.0, 2, 'D', 1]

AlAs/GaAs
###Anisotropic positive magnetoresistance of a nonplanar 2D electron gas in a parallel magnetic field|A. V. Goran,A. A. Bykov,A. K. Bakarov,J. C. Portal###
(210664, 210668)
 We study the transport properties of a 2D electron gas in narrow GaAs quantumwells with AlAs/GaAs superlattice barriers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[50.0, 2, 'D', 1],[20.0, 2, 'D', 0],[63.0, 2, 'D', 1]

PH
###Planar Hall Effect MRAM|Y. Bason,L. Klein,J. -B. Yau,X. Hong,J. Hoffman,C. H. Ahn###
(210809, 210810)
 We suggest a new type of magnetic random access memory (MRAM) that is basedon the phenomenon of the planar Hall effect (PHE) in magnetic films, and wedemonstrate this idea with manganite films.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PH
###Planar Hall Effect MRAM|Y. Bason,L. Klein,J. -B. Yau,X. Hong,J. Hoffman,C. H. Ahn###
(210841, 210842)
 The PHE-MRAM<missing VAR> is structurallysimpler than currently developed MRAM<missing VAR> that is based on magnetoresistance tunneljunctions (MTJ), with the tunnel junction structure being replaced by a singlelayer film.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cd
###An Intermediate Phase at the Metal-Insulator Boundary in a Magnetically Doped Two-Dimensional Electron System|J. Jaroszynski,T. Andrearczyk,G. Karczewski,J. Wróbel,T. Wojtowicz,Dragana Popovic,T. Dietl###
(210970, 210970)
 A magnetotransport study in magnetically doped (Cd,Mn)Te 2D quantum wellsreveals an apparent metal-insulator transition as well as an anomalousintermediate phase just on its metallic side.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 2, 'D', 0]

Mn
###An Intermediate Phase at the Metal-Insulator Boundary in a Magnetically Doped Two-Dimensional Electron System|J. Jaroszynski,T. Andrearczyk,G. Karczewski,J. Wróbel,T. Wojtowicz,Dragana Popovic,T. Dietl###
(210972, 210972)
 A magnetotransport study in magnetically doped (Cd,Mn)Te 2D quantum wellsreveals an apparent metal-insulator transition as well as an anomalousintermediate phase just on its metallic side.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 2, 'D', 0]

Te
###An Intermediate Phase at the Metal-Insulator Boundary in a Magnetically Doped Two-Dimensional Electron System|J. Jaroszynski,T. Andrearczyk,G. Karczewski,J. Wróbel,T. Wojtowicz,Dragana Popovic,T. Dietl###
(210974, 210974)
 A magnetotransport study in magnetically doped (Cd,Mn)Te 2D quantum wellsreveals an apparent metal-insulator transition as well as an anomalousintermediate phase just on its metallic side.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[1.0, 2, 'D', 0]

La2CuO4
###Negative differential resistance in single crystal La_{2}CuO_{4} at low temperature|B. I. Belevtsev,N. V. Dalakova###
(211099, 211103)
Negative differential resistance in single crystal La2CuO4 at low temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Negative differential resistance in single crystal La_{2}CuO_{4} at low temperature|B. I. Belevtsev,N. V. Dalakova###
(211135, 211135)
 A current-controlled negative differential resistance has been revealed inthe I-V characteristics of single crystal La2CuO4delta in the lowtemperature region.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Negative differential resistance in single crystal La_{2}CuO_{4} at low temperature|B. I. Belevtsev,N. V. Dalakova###
(211137, 211137)
 A current-controlled negative differential resistance has been revealed inthe I-V characteristics of single crystal La2CuO4delta in the lowtemperature region.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La2CuO4
###Negative differential resistance in single crystal La_{2}CuO_{4} at low temperature|B. I. Belevtsev,N. V. Dalakova###
(211147, 211151)
 A current-controlled negative differential resistance has been revealed inthe I-V characteristics of single crystal La2CuO4delta in the lowtemperature region.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

U
###Magnetotransport in d-wave density waves|Balázs Dóra,Kazumi Maki,Attila Virosztek###
(211284, 211284)
 Angle dependent magnetoresistance (ADMR) and giant Nernst effect arehallmarks of unconventional density waves (UD<missing VAR>W).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Magnetotransport in d-wave density waves|Balázs Dóra,Kazumi Maki,Attila Virosztek###
(211286, 211286)
 Angle dependent magnetoresistance (ADMR) and giant Nernst effect arehallmarks of unconventional density waves (UD<missing VAR>W).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Magnetotransport in d-wave density waves|Balázs Dóra,Kazumi Maki,Attila Virosztek###
(211313, 211313)
 Here these transportproperties for d<missing VAR>-wave density wave (d-DW) are computed forquasi-two-dimensional systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Y0.68Pr0.32Ba2Cu3O7
###Magnetotransport in d-wave density waves|Balázs Dóra,Kazumi Maki,Attila Virosztek###
(211358, 211367)
 The present theory describes ADMR observed inthe pseudogap phase of Y0.68Pr0.32Ba2Cu3O7 and CeCoIn5 single crystalsvery satisfactorily.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5384615384615384,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23076923076923078,0,0,0,0,0,0,0,0,0,0.05230769230769231,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15384615384615385,0,0,0.024615384615384615,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CeCoIn5
###Magnetotransport in d-wave density waves|Balázs Dóra,Kazumi Maki,Attila Virosztek###
(211371, 211374)
 The present theory describes ADMR observed inthe pseudogap phase of Y0.68Pr0.32Ba2Cu3O7 and CeCoIn5 single crystalsvery satisfactorily.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7142857142857143,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ce
###Magnetoresistance Anomalies in Ce-based Heavy Fermion Compounds|N E Sluchanko,A V Bogach,V V Glushkov,S V Demishev,N A Samarin,G S Burhanov,O D Chistiakov,D N Sluchanko###
(211560, 211560)
Magnetoresistance Anomalies in Ce-based Heavy Fermion Compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 80, 'kOe', 2],[233.0, 107, ',', 6]

H
###Magnetoresistance Anomalies in Ce-based Heavy Fermion Compounds|N E Sluchanko,A V Bogach,V V Glushkov,S V Demishev,N A Samarin,G S Burhanov,O D Chistiakov,D N Sluchanko###
(211589, 211589)
 The work presents experimental results of precision magnetoresistance dr(H,T)measurements obtained for canonical heavy fermion compounds CeAl2, CeAl3, CeCu6and substitutional solid solutions CeCu6-xAux (x<missing VAR>0.1 and 0.2) andCe(Al0.95M<missing VAR>0.05)2 (M<missing VAR> - Co, Ni).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 80, 'kOe', 1],[204.0, 107, ',', 5]

CeAl2
###Magnetoresistance Anomalies in Ce-based Heavy Fermion Compounds|N E Sluchanko,A V Bogach,V V Glushkov,S V Demishev,N A Samarin,G S Burhanov,O D Chistiakov,D N Sluchanko###
(211609, 211611)
 The work presents experimental results of precision magnetoresistance dr(H,T)measurements obtained for canonical heavy fermion compounds CeAl2, CeAl3, CeCu6and substitutional solid solutions CeCu6-xAux (x<missing VAR>0.1 and 0.2) andCe(Al0.95M<missing VAR>0.05)2 (M<missing VAR> - Co, Ni).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 80, 'kOe', 1],[182.0, 107, ',', 5]

CeAl3
###Magnetoresistance Anomalies in Ce-based Heavy Fermion Compounds|N E Sluchanko,A V Bogach,V V Glushkov,S V Demishev,N A Samarin,G S Burhanov,O D Chistiakov,D N Sluchanko###
(211614, 211616)
 The work presents experimental results of precision magnetoresistance dr(H,T)measurements obtained for canonical heavy fermion compounds CeAl2, CeAl3, CeCu6and substitutional solid solutions CeCu6-xAux (x<missing VAR>0.1 and 0.2) andCe(Al0.95M<missing VAR>0.05)2 (M<missing VAR> - Co, Ni).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 80, 'kOe', 1],[177.0, 107, ',', 5]

CeCu6
###Magnetoresistance Anomalies in Ce-based Heavy Fermion Compounds|N E Sluchanko,A V Bogach,V V Glushkov,S V Demishev,N A Samarin,G S Burhanov,O D Chistiakov,D N Sluchanko###
(211619, 211621)
 The work presents experimental results of precision magnetoresistance dr(H,T)measurements obtained for canonical heavy fermion compounds CeAl2, CeAl3, CeCu6and substitutional solid solutions CeCu6-xAux (x<missing VAR>0.1 and 0.2) andCe(Al0.95M<missing VAR>0.05)2 (M<missing VAR> - Co, Ni).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 80, 'kOe', 1],[172.0, 107, ',', 5]

CeCu6-x
###Magnetoresistance Anomalies in Ce-based Heavy Fermion Compounds|N E Sluchanko,A V Bogach,V V Glushkov,S V Demishev,N A Samarin,G S Burhanov,O D Chistiakov,D N Sluchanko###
(211632, 211636)
 The work presents experimental results of precision magnetoresistance dr(H,T)measurements obtained for canonical heavy fermion compounds CeAl2, CeAl3, CeCu6and substitutional solid solutions CeCu6-xAux (x<missing VAR>0.1 and 0.2) andCe(Al0.95M<missing VAR>0.05)2 (M<missing VAR> - Co, Ni).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[74.0, 80, 'kOe', 1],[157.0, 107, ',', 5]

Ce
###Magnetoresistance Anomalies in Ce-based Heavy Fermion Compounds|N E Sluchanko,A V Bogach,V V Glushkov,S V Demishev,N A Samarin,G S Burhanov,O D Chistiakov,D N Sluchanko###
(211651, 211651)
 The work presents experimental results of precision magnetoresistance dr(H,T)measurements obtained for canonical heavy fermion compounds CeAl2, CeAl3, CeCu6and substitutional solid solutions CeCu6-xAux (x<missing VAR>0.1 and 0.2) andCe(Al0.95M<missing VAR>0.05)2 (M<missing VAR> - Co, Ni).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 80, 'kOe', 1],[142.0, 107, ',', 5]

Al0.95
###Magnetoresistance Anomalies in Ce-based Heavy Fermion Compounds|N E Sluchanko,A V Bogach,V V Glushkov,S V Demishev,N A Samarin,G S Burhanov,O D Chistiakov,D N Sluchanko###
(211653, 211654)
 The work presents experimental results of precision magnetoresistance dr(H,T)measurements obtained for canonical heavy fermion compounds CeAl2, CeAl3, CeCu6and substitutional solid solutions CeCu6-xAux (x<missing VAR>0.1 and 0.2) andCe(Al0.95M<missing VAR>0.05)2 (M<missing VAR> - Co, Ni).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 80, 'kOe', 1],[139.0, 107, ',', 5]

Co
###Magnetoresistance Anomalies in Ce-based Heavy Fermion Compounds|N E Sluchanko,A V Bogach,V V Glushkov,S V Demishev,N A Samarin,G S Burhanov,O D Chistiakov,D N Sluchanko###
(211665, 211665)
 The work presents experimental results of precision magnetoresistance dr(H,T)measurements obtained for canonical heavy fermion compounds CeAl2, CeAl3, CeCu6and substitutional solid solutions CeCu6-xAux (x<missing VAR>0.1 and 0.2) andCe(Al0.95M<missing VAR>0.05)2 (M<missing VAR> - Co, Ni).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 80, 'kOe', 1],[128.0, 107, ',', 5]

Ni
###Magnetoresistance Anomalies in Ce-based Heavy Fermion Compounds|N E Sluchanko,A V Bogach,V V Glushkov,S V Demishev,N A Samarin,G S Burhanov,O D Chistiakov,D N Sluchanko###
(211668, 211668)
 The work presents experimental results of precision magnetoresistance dr(H,T)measurements obtained for canonical heavy fermion compounds CeAl2, CeAl3, CeCu6and substitutional solid solutions CeCu6-xAux (x<missing VAR>0.1 and 0.2) andCe(Al0.95M<missing VAR>0.05)2 (M<missing VAR> - Co, Ni).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 80, 'kOe', 1],[125.0, 107, ',', 5]

K
###Magnetoresistance Anomalies in Ce-based Heavy Fermion Compounds|N E Sluchanko,A V Bogach,V V Glushkov,S V Demishev,N A Samarin,G S Burhanov,O D Chistiakov,D N Sluchanko###
(211697, 211697)
 The research was performed in a wide range oftemperatures (1.8-30K) and magnetic fields (up to 80 kOe).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 80, 'kOe', 0],[96.0, 107, ',', 4]

Ce
###Magnetoresistance Anomalies in Ce-based Heavy Fermion Compounds|N E Sluchanko,A V Bogach,V V Glushkov,S V Demishev,N A Samarin,G S Burhanov,O D Chistiakov,D N Sluchanko###
(211750, 211750)
 The data analysisindicates that the most consistent interpretation of magnetoresistance of bothparamagnetic and magnetically ordered Ce-based systems with strong electroncorrelations can be obtained through the approach developed by K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 80, 'kOe', 1],[43.0, 107, ',', 3]

K
###Magnetoresistance Anomalies in Ce-based Heavy Fermion Compounds|N E Sluchanko,A V Bogach,V V Glushkov,S V Demishev,N A Samarin,G S Burhanov,O D Chistiakov,D N Sluchanko###
(211781, 211781)
 The data analysisindicates that the most consistent interpretation of magnetoresistance of bothparamagnetic and magnetically ordered Ce-based systems with strong electroncorrelations can be obtained through the approach developed by K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 80, 'kOe', 1],[12.0, 107, ',', 3]

H
###Magnetoresistance Anomalies in Ce-based Heavy Fermion Compounds|N E Sluchanko,A V Bogach,V V Glushkov,S V Demishev,N A Samarin,G S Burhanov,O D Chistiakov,D N Sluchanko###
(211843, 211843)
 Within this approach localmagnetic susceptibility hiloc(H,T<missing VAR>0)(1/H d<missing VAR>(dr/r)/d<missing VAR>H)1/2 has been estimateddirectly from the magnetoresistance data dr/rf(H,T<missing VAR>0).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 80, 'kOe', 5],[50.0, 107, ',', 1]

H
###Magnetoresistance Anomalies in Ce-based Heavy Fermion Compounds|N E Sluchanko,A V Bogach,V V Glushkov,S V Demishev,N A Samarin,G S Burhanov,O D Chistiakov,D N Sluchanko###
(211851, 211851)
 Within this approach localmagnetic susceptibility hiloc(H,T<missing VAR>0)(1/H d<missing VAR>(dr/r)/d<missing VAR>H)1/2 has been estimateddirectly from the magnetoresistance data dr/rf(H,T<missing VAR>0).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 80, 'kOe', 5],[58.0, 107, ',', 1]

H
###Magnetoresistance Anomalies in Ce-based Heavy Fermion Compounds|N E Sluchanko,A V Bogach,V V Glushkov,S V Demishev,N A Samarin,G S Burhanov,O D Chistiakov,D N Sluchanko###
(211861, 211861)
 Within this approach localmagnetic susceptibility hiloc(H,T<missing VAR>0)(1/H d<missing VAR>(dr/r)/d<missing VAR>H)1/2 has been estimateddirectly from the magnetoresistance data dr/rf(H,T<missing VAR>0).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 80, 'kOe', 5],[68.0, 107, ',', 1]

H
###Magnetoresistance Anomalies in Ce-based Heavy Fermion Compounds|N E Sluchanko,A V Bogach,V V Glushkov,S V Demishev,N A Samarin,G S Burhanov,O D Chistiakov,D N Sluchanko###
(211889, 211889)
 Within this approach localmagnetic susceptibility hiloc(H,T<missing VAR>0)(1/H d<missing VAR>(dr/r)/d<missing VAR>H)1/2 has been estimateddirectly from the magnetoresistance data dr/rf(H,T<missing VAR>0).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 80, 'kOe', 5],[96.0, 107, ',', 1]

As
###Magnetoresistance Anomalies in Ce-based Heavy Fermion Compounds|N E Sluchanko,A V Bogach,V V Glushkov,S V Demishev,N A Samarin,G S Burhanov,O D Chistiakov,D N Sluchanko###
(211896, 211896)
 As a result, twoadditional contributions to magnetoresistance in Ce-based magneticintermetallides have been established and classified.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, 80, 'kOe', 6],[103.0, 107, ',', 2]

Ce
###Magnetoresistance Anomalies in Ce-based Heavy Fermion Compounds|N E Sluchanko,A V Bogach,V V Glushkov,S V Demishev,N A Samarin,G S Burhanov,O D Chistiakov,D N Sluchanko###
(211916, 211916)
 As a result, twoadditional contributions to magnetoresistance in Ce-based magneticintermetallides have been established and classified.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[206.0, 80, 'kOe', 6],[123.0, 107, ',', 2]

Ce
###Magnetoresistance Anomalies in Ce-based Heavy Fermion Compounds|N E Sluchanko,A V Bogach,V V Glushkov,S V Demishev,N A Samarin,G S Burhanov,O D Chistiakov,D N Sluchanko###
(212009, 212009)
 The procedure allowed todetermine the peculiarities of magnetic phase ht diagram as well as to revealthe electron density of states renormalization effects in a wide vicinity ofquantum critical point in the archetypal Ce-based systems with strong electroncorrelations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[299.0, 80, 'kOe', 7],[216.0, 107, ',', 3]

Au
###Spin injection in a single metallic nanoparticle: a step towards nanospintronics|A. Bernand-Mantel,P. Seneor,N. Lidgi,M. Munoz,V. Cros,S. Fusil,K. Bouzehouane,C. Deranlot,A. Vaures,F. Petroff,A. Fert###
(212137, 212137)
 Coulomb blockade effects show clear evidence forsingle electron tunneling through a single 2.5 nm Au cluster.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 2.5, 'nm', 0]

(NbSe4)3I
###Comments on "Giant Dielectric Response in the One-Dimensional Charge-Ordered Semiconductor (NbSe_{4})_{3}I" and "Colossal Magnetocapacitance and Colossal Magnetoresistance in HgCr_{2}S_{4}"|Gustau Catalan,James F. Scott###
(212362, 212368)
Comments on Giant Dielectric Response in the One-Dimensional Charge-Ordered Semiconductor (NbSe4)3I and Colossal Magnetocapacitance and Colossal Magnetoresistance in HgCr2S4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0.1875,0,0,0,0,0,0,0,0,0,0,0,0.0625,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 96, ',', 6],[130.0, 96, ',', 11]

HgCr2S4
###Comments on "Giant Dielectric Response in the One-Dimensional Charge-Ordered Semiconductor (NbSe_{4})_{3}I" and "Colossal Magnetocapacitance and Colossal Magnetoresistance in HgCr_{2}S_{4}"|Gustau Catalan,James F. Scott###
(212384, 212388)
Comments on Giant Dielectric Response in the One-Dimensional Charge-Ordered Semiconductor (NbSe4)3I and Colossal Magnetocapacitance and Colossal Magnetoresistance in HgCr2S4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 96, ',', 6],[110.0, 96, ',', 11]

(NbSe4)3I
###Comments on "Giant Dielectric Response in the One-Dimensional Charge-Ordered Semiconductor (NbSe_{4})_{3}I" and "Colossal Magnetocapacitance and Colossal Magnetoresistance in HgCr_{2}S_{4}"|Gustau Catalan,James F. Scott###
(212416, 212422)
 Comments on Giant Dielectric Response in the One-Dimensional Charge-OrderedSemiconductor (NbSe4)3I (D<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0.1875,0,0,0,0,0,0,0,0,0,0,0,0.0625,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 96, ',', 5],[76.0, 96, ',', 10]

HgCr2S4
###Comments on "Giant Dielectric Response in the One-Dimensional Charge-Ordered Semiconductor (NbSe_{4})_{3}I" and "Colossal Magnetocapacitance and Colossal Magnetoresistance in HgCr_{2}S_{4}"|Gustau Catalan,James F. Scott###
(212471, 212475)
 96,046402 (2006)) and Colossal Magnetocapacitance and Colossal Magnetoresistancein HgCr2S4 (S.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 96, ',', 0],[23.0, 96, ',', 5]

S
###Comments on "Giant Dielectric Response in the One-Dimensional Charge-Ordered Semiconductor (NbSe_{4})_{3}I" and "Colossal Magnetocapacitance and Colossal Magnetoresistance in HgCr_{2}S_{4}"|Gustau Catalan,James F. Scott###
(212478, 212478)
 96,046402 (2006)) and Colossal Magnetocapacitance and Colossal Magnetoresistancein HgCr2S4 (S.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 96, ',', 0],[20.0, 96, ',', 5]

Ge
###Effect of Ge substitution for Si on the anomalous magnetocaloric and magnetoresistance properties of GdMn2Si2 compounds|Pramod Kumar,Niraj K. Singh,K. G. Suresh,A. K. Nigam,S. K. Malik###
(212520, 212520)
Effect of Ge substitution for Si on the anomalous magnetocaloric and magnetoresistance properties of GdMn2Si2 compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 0, ',', 1],[80.0, 1, ',', 1],[308.0, 1.2, 'K', 6],[347.0, 22, '%', 7]

Si
###Effect of Ge substitution for Si on the anomalous magnetocaloric and magnetoresistance properties of GdMn2Si2 compounds|Pramod Kumar,Niraj K. Singh,K. G. Suresh,A. K. Nigam,S. K. Malik###
(212526, 212526)
Effect of Ge substitution for Si on the anomalous magnetocaloric and magnetoresistance properties of GdMn2Si2 compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 0, ',', 1],[74.0, 1, ',', 1],[302.0, 1.2, 'K', 6],[341.0, 22, '%', 7]

GdMn2Si2
###Effect of Ge substitution for Si on the anomalous magnetocaloric and magnetoresistance properties of GdMn2Si2 compounds|Pramod Kumar,Niraj K. Singh,K. G. Suresh,A. K. Nigam,S. K. Malik###
(212544, 212548)
Effect of Ge substitution for Si on the anomalous magnetocaloric and magnetoresistance properties of GdMn2Si2 compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 0, ',', 1],[52.0, 1, ',', 1],[280.0, 1.2, 'K', 6],[319.0, 22, '%', 7]

Ge
###Effect of Ge substitution for Si on the anomalous magnetocaloric and magnetoresistance properties of GdMn2Si2 compounds|Pramod Kumar,Niraj K. Singh,K. G. Suresh,A. K. Nigam,S. K. Malik###
(212559, 212559)
 The effect of Ge substitution on the magnetization, heat capacity,magnetocaloric effect and magnetoresistance of GdMn2Si2-xGex (x<missing VAR>0, 1, and 2)compounds has been studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 0, ',', 0],[41.0, 1, ',', 0],[269.0, 1.2, 'K', 5],[308.0, 22, '%', 6]

GdMn2Si2-x
###Effect of Ge substitution for Si on the anomalous magnetocaloric and magnetoresistance properties of GdMn2Si2 compounds|Pramod Kumar,Niraj K. Singh,K. G. Suresh,A. K. Nigam,S. K. Malik###
(212586, 212592)
 The effect of Ge substitution on the magnetization, heat capacity,magnetocaloric effect and magnetoresistance of GdMn2Si2-xGex (x<missing VAR>0, 1, and 2)compounds has been studied.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[5.0, 0, ',', 0],[8.0, 1, ',', 0],[236.0, 1.2, 'K', 5],[275.0, 22, '%', 6]

Gd
###Effect of Ge substitution for Si on the anomalous magnetocaloric and magnetoresistance properties of GdMn2Si2 compounds|Pramod Kumar,Niraj K. Singh,K. G. Suresh,A. K. Nigam,S. K. Malik###
(212630, 212630)
 The magnetic transition associated with the Gdordering is found to change from second order to first order on Gesubstitution.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 0, ',', 1],[30.0, 1, ',', 1],[198.0, 1.2, 'K', 4],[237.0, 22, '%', 5]

Ge
###Effect of Ge substitution for Si on the anomalous magnetocaloric and magnetoresistance properties of GdMn2Si2 compounds|Pramod Kumar,Niraj K. Singh,K. G. Suresh,A. K. Nigam,S. K. Malik###
(212657, 212657)
 The magnetic transition associated with the Gdordering is found to change from second order to first order on Gesubstitution.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 0, ',', 1],[57.0, 1, ',', 1],[171.0, 1.2, 'K', 4],[210.0, 22, '%', 5]

S
###Effect of Ge substitution for Si on the anomalous magnetocaloric and magnetoresistance properties of GdMn2Si2 compounds|Pramod Kumar,Niraj K. Singh,K. G. Suresh,A. K. Nigam,S. K. Malik###
(212736, 212736)
 Magnetocaloric effect has been calculated in terms ofadiabatic temperature change (deltaTad) as well as isothermal magnetic entropychange (deltaSM) using the heat capacity data.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 0, ',', 3],[136.0, 1, ',', 3],[92.0, 1.2, 'K', 2],[131.0, 22, '%', 3]

S
###Effect of Ge substitution for Si on the anomalous magnetocaloric and magnetoresistance properties of GdMn2Si2 compounds|Pramod Kumar,Niraj K. Singh,K. G. Suresh,A. K. Nigam,S. K. Malik###
(212795, 212795)
The maximum values of deltaSM<missing VAR> and deltaTad for GdMn2Ge2 are found to be 5.9J<missing VAR>/kgK and 1.2 K, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[198.0, 0, ',', 5],[195.0, 1, ',', 5],[33.0, 1.2, 'K', 0],[72.0, 22, '%', 1]

GdMn2Ge2
###Effect of Ge substitution for Si on the anomalous magnetocaloric and magnetoresistance properties of GdMn2Si2 compounds|Pramod Kumar,Niraj K. Singh,K. G. Suresh,A. K. Nigam,S. K. Malik###
(212805, 212809)
The maximum values of deltaSM<missing VAR> and deltaTad for GdMn2Ge2 are found to be 5.9J<missing VAR>/kgK and 1.2 K, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[208.0, 0, ',', 5],[205.0, 1, ',', 5],[19.0, 1.2, 'K', 0],[58.0, 22, '%', 1]

K
###Effect of Ge substitution for Si on the anomalous magnetocaloric and magnetoresistance properties of GdMn2Si2 compounds|Pramod Kumar,Niraj K. Singh,K. G. Suresh,A. K. Nigam,S. K. Malik###
(212825, 212825)
The maximum values of deltaSM<missing VAR> and deltaTad for GdMn2Ge2 are found to be 5.9J<missing VAR>/kgK and 1.2 K, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[228.0, 0, ',', 5],[225.0, 1, ',', 5],[3.0, 1.2, 'K', 0],[42.0, 22, '%', 1]

GdMn2Ge2
###Effect of Ge substitution for Si on the anomalous magnetocaloric and magnetoresistance properties of GdMn2Si2 compounds|Pramod Kumar,Niraj K. Singh,K. G. Suresh,A. K. Nigam,S. K. Malik###
(212878, 212882)
 The magnetoresistance is found to be very largeand positive with a maximum value of about 22% in the case of GdMn2Ge2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[281.0, 0, ',', 6],[278.0, 1, ',', 6],[50.0, 1.2, 'K', 1],[11.0, 22, '%', 0]

In
###Effect of Ge substitution for Si on the anomalous magnetocaloric and magnetoresistance properties of GdMn2Si2 compounds|Pramod Kumar,Niraj K. Singh,K. G. Suresh,A. K. Nigam,S. K. Malik###
(212885, 212885)
 In theother two compounds also, the magnetoresistance is predominantly positive,except in the vicinity of the Gd ordering temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[288.0, 0, ',', 7],[285.0, 1, ',', 7],[57.0, 1.2, 'K', 2],[18.0, 22, '%', 1]

Gd
###Effect of Ge substitution for Si on the anomalous magnetocaloric and magnetoresistance properties of GdMn2Si2 compounds|Pramod Kumar,Niraj K. Singh,K. G. Suresh,A. K. Nigam,S. K. Malik###
(212923, 212923)
 In theother two compounds also, the magnetoresistance is predominantly positive,except in the vicinity of the Gd ordering temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[326.0, 0, ',', 7],[323.0, 1, ',', 7],[95.0, 1.2, 'K', 2],[56.0, 22, '%', 1]

La1.85Y0.15CuO4
###Is La1.85Y0.15CuO4 an oxygen-doped cuprate superconductor?|W. Yu,B. Liang,P. Li,S. Fujino,T. Murakami,I. Takeuchi,R. L. Greene###
(212985, 212991)
Is La1.85Y0.15CuO4 an oxygen-doped cuprate superconductor?
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0.02142857142857143,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2642857142857143,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La1.85Y0.15CuO
###Is La1.85Y0.15CuO4 an oxygen-doped cuprate superconductor?|W. Yu,B. Liang,P. Li,S. Fujino,T. Murakami,I. Takeuchi,R. L. Greene###
(213035, 213040)
 We report resistivity, Hall effect, Nernst effect, and magnetoresistancemeasurements on T<missing VAR>-phase La1.85Y0.15CuO (L<missing VAR>YCO) films prepared by pulsed laserdeposition under different oxygen conditions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.0375,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4625,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Is La1.85Y0.15CuO4 an oxygen-doped cuprate superconductor?|W. Yu,B. Liang,P. Li,S. Fujino,T. Murakami,I. Takeuchi,R. L. Greene###
(213046, 213046)
 We report resistivity, Hall effect, Nernst effect, and magnetoresistancemeasurements on T<missing VAR>-phase La1.85Y0.15CuO (L<missing VAR>YCO) films prepared by pulsed laserdeposition under different oxygen conditions.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YCO
###Is La1.85Y0.15CuO4 an oxygen-doped cuprate superconductor?|W. Yu,B. Liang,P. Li,S. Fujino,T. Murakami,I. Takeuchi,R. L. Greene###
(213085, 213087)
 Our results show thatsuperconductivity in L<missing VAR>YCO originates from an oxygen-doped Mott-like insulatorand not from a weakly correlated, half-filled band metal as proposedpreviously.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

InAs
###Spin transport through a single self-assembled InAs quantum dot with ferromagnetic leads|K. Hamaya,S. Masubuchi,M. Kawamura,T. Machida,M. Jung,K. Shibata,K. Hirakawa,T. Taniyama,S. Ishida,Y. Arakawa###
(213157, 213158)
Spin transport through a single self-assembled InAs quantum dot with ferromagnetic leads.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

InAs
###Spin transport through a single self-assembled InAs quantum dot with ferromagnetic leads|K. Hamaya,S. Masubuchi,M. Kawamura,T. Machida,M. Jung,K. Shibata,K. Hirakawa,T. Taniyama,S. Ishida,Y. Arakawa###
(213212, 213213)
 We have fabricated a lateral double barrier magnetic tunnel junction (MTJ)which consists of a single self-assembled InAs quantum dot (QD) withferromagnetic Co leads.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Spin transport through a single self-assembled InAs quantum dot with ferromagnetic leads|K. Hamaya,S. Masubuchi,M. Kawamura,T. Machida,M. Jung,K. Shibata,K. Hirakawa,T. Taniyama,S. Ishida,Y. Arakawa###
(213229, 213229)
 We have fabricated a lateral double barrier magnetic tunnel junction (MTJ)which consists of a single self-assembled InAs quantum dot (QD) withferromagnetic Co leads.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/GaAs/Au
###Tunneling anisotropic magnetoresistance and spin-orbit coupling in Fe/GaAs/Au tunnel junctions|J. Moser,A. Matos-Abiague,D. Schuh,W. Wegscheider,J. Fabian,D. Weiss###
(213341, 213346)
Tunneling anisotropic magnetoresistance and spin-orbit coupling in Fe/GaAs/Au tunnel junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Fe/GaAs/Au
###Tunneling anisotropic magnetoresistance and spin-orbit coupling in Fe/GaAs/Au tunnel junctions|J. Moser,A. Matos-Abiague,D. Schuh,W. Wegscheider,J. Fabian,D. Weiss###
(213391, 213396)
 We report the observation of tunneling anisotropic magnetoresistance effect(TAMR) in the epitaxial metal-semiconductor system Fe/GaAs/Au.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Ga
###Anisotropic magnetoresistance contribution to measured domain wall resistances of in-plane magnetised (Ga,Mn)As|H. G. Roberts,S. Crampin,S. J. Bending###
(213521, 213521)
Anisotropic magnetoresistance contribution to measured domain wall resistances of in-plane magnetised (Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Anisotropic magnetoresistance contribution to measured domain wall resistances of in-plane magnetised (Ga,Mn)As|H. G. Roberts,S. Crampin,S. J. Bending###
(213523, 213523)
Anisotropic magnetoresistance contribution to measured domain wall resistances of in-plane magnetised (Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Anisotropic magnetoresistance contribution to measured domain wall resistances of in-plane magnetised (Ga,Mn)As|H. G. Roberts,S. Crampin,S. J. Bending###
(213525, 213525)
Anisotropic magnetoresistance contribution to measured domain wall resistances of in-plane magnetised (Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###Anisotropic magnetoresistance contribution to measured domain wall resistances of in-plane magnetised (Ga,Mn)As|H. G. Roberts,S. Crampin,S. J. Bending###
(213571, 213571)
 We demonstrate the presence of an important anisotropic magnetoresistancecontribution to the domain wall resistance recently measured in thin-film(Ga,Mn)As with in-plane magnetic anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Anisotropic magnetoresistance contribution to measured domain wall resistances of in-plane magnetised (Ga,Mn)As|H. G. Roberts,S. Crampin,S. J. Bending###
(213573, 213573)
 We demonstrate the presence of an important anisotropic magnetoresistancecontribution to the domain wall resistance recently measured in thin-film(Ga,Mn)As with in-plane magnetic anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Anisotropic magnetoresistance contribution to measured domain wall resistances of in-plane magnetised (Ga,Mn)As|H. G. Roberts,S. Crampin,S. J. Bending###
(213575, 213575)
 We demonstrate the presence of an important anisotropic magnetoresistancecontribution to the domain wall resistance recently measured in thin-film(Ga,Mn)As with in-plane magnetic anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HIV
###Genetic Algorithms and Critical Phenomena|A. Barrañón,J. A. López,C. O. Dorso###
(213900, 213902)
 Critical exponents havebeen extracted via computational simulations of nucleation for colossalmagnetoresistance, heavy ions liquid-gas phase transitions and HIV to AID<missing VAR>Stransition.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Genetic Algorithms and Critical Phenomena|A. Barrañón,J. A. López,C. O. Dorso###
(213907, 213907)
 Critical exponents havebeen extracted via computational simulations of nucleation for colossalmagnetoresistance, heavy ions liquid-gas phase transitions and HIV to AID<missing VAR>Stransition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Genetic Algorithms and Critical Phenomena|A. Barrañón,J. A. López,C. O. Dorso###
(213909, 213909)
 Critical exponents havebeen extracted via computational simulations of nucleation for colossalmagnetoresistance, heavy ions liquid-gas phase transitions and HIV to AID<missing VAR>Stransition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co/Cu/Co
###Implementation of a non-equilibrium Green's function method to calculate spin transfer torque|Christian Heiliger,Michael Czerner,Bogdan Yu. Yavorsky,Ingrid Mertig,Mark D. Stiles###
(214062, 214066)
 We use our implementation tostudy the spin transfer torque in metallic Co/Cu/Co junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Gd4Co3
###Large magnetocaloric effect in Gd4Co3|Niharika Mohapatra,Kartik K Iyer,E. V. Sampathkumaran###
(214230, 214233)
Large magnetocaloric effect in Gd4Co3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 300, 'K', 1]

S
###Large magnetocaloric effect in Gd4Co3|Niharika Mohapatra,Kartik K Iyer,E. V. Sampathkumaran###
(214250, 214250)
 We report a large entropy change (DeltaS) below 300 K, peaking near T<missing VAR>C 220K, due to isothermal change of magnetic field, for Gd4Co3, with a refrigerationcapacity higher than that of Gd.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 300, 'K', 0]

C
###Large magnetocaloric effect in Gd4Co3|Niharika Mohapatra,Kartik K Iyer,E. V. Sampathkumaran###
(214262, 214262)
 We report a large entropy change (DeltaS) below 300 K, peaking near T<missing VAR>C 220K, due to isothermal change of magnetic field, for Gd4Co3, with a refrigerationcapacity higher than that of Gd.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 300, 'K', 0]

K
###Large magnetocaloric effect in Gd4Co3|Niharika Mohapatra,Kartik K Iyer,E. V. Sampathkumaran###
(214267, 214267)
 We report a large entropy change (DeltaS) below 300 K, peaking near T<missing VAR>C 220K, due to isothermal change of magnetic field, for Gd4Co3, with a refrigerationcapacity higher than that of Gd.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 300, 'K', 0]

Gd4Co3
###Large magnetocaloric effect in Gd4Co3|Niharika Mohapatra,Kartik K Iyer,E. V. Sampathkumaran###
(214287, 214290)
 We report a large entropy change (DeltaS) below 300 K, peaking near T<missing VAR>C 220K, due to isothermal change of magnetic field, for Gd4Co3, with a refrigerationcapacity higher than that of Gd.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 300, 'K', 0]

Gd
###Large magnetocaloric effect in Gd4Co3|Niharika Mohapatra,Kartik K Iyer,E. V. Sampathkumaran###
(214310, 214310)
 We report a large entropy change (DeltaS) below 300 K, peaking near T<missing VAR>C 220K, due to isothermal change of magnetic field, for Gd4Co3, with a refrigerationcapacity higher than that of Gd.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 300, 'K', 0]

S
###Large magnetocaloric effect in Gd4Co3|Niharika Mohapatra,Kartik K Iyer,E. V. Sampathkumaran###
(214348, 214348)
DeltaS behavior is also compared with that of magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 300, 'K', 2]

CoFe
###Voltage and Temperature Dependence of High-Field Magnetoresistance in Arrays of Magnetic Nanoparticles|Reasmey P. Tan,Julian Carrey,Marc Respaud###
(214431, 214432)
 Huge values of high field magnetoresistance have been recently reported inlarge arrays of CoFe nanoparticles embedded in an organic insulating lattice inthe Coulomb blockade regime.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Boundary-mediated electron-electron interactions in quantum point contacts|Vincent Thomas Francois Renard,O. A. Tkachenko,V. A. Tkachenko,T. Ota,N. Kumada,J. -C. Portal,Y. Hirayama###
(214841, 214841)
 At the same time apositive magnetoresistance arises at high temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 2, 'e', 1]

FePt/Au/FePt
###Spin-transfer switching and thermal stability in an FePt/Au/FePt nanopillar prepared by alternate monatomic layer deposition|Kay Yakushiji,Shinji Yuasa,Taro Nagahama,Akio Fukushima,Hitoshi Kubota,Toshikazu Katayama,Koji Ando###
(214955, 214961)
Spin-transfer switching and thermal stability in an FePt/Au/FePt nanopillar prepared by alternate monatomic layer deposition.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

CPP
###Spin-transfer switching and thermal stability in an FePt/Au/FePt nanopillar prepared by alternate monatomic layer deposition|Kay Yakushiji,Shinji Yuasa,Taro Nagahama,Akio Fukushima,Hitoshi Kubota,Toshikazu Katayama,Koji Ando###
(214998, 215000)
 We fabricated a current-perpendicular-to-plane giant magnetoresistance(CPP-GMR) nanopillar with a 1-nm-thick FePt free layer having perpendicularanisotropy using the alternate monatomic layer deposition method.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FePt
###Spin-transfer switching and thermal stability in an FePt/Au/FePt nanopillar prepared by alternate monatomic layer deposition|Kay Yakushiji,Shinji Yuasa,Taro Nagahama,Akio Fukushima,Hitoshi Kubota,Toshikazu Katayama,Koji Ando###
(215019, 215020)
 We fabricated a current-perpendicular-to-plane giant magnetoresistance(CPP-GMR) nanopillar with a 1-nm-thick FePt free layer having perpendicularanisotropy using the alternate monatomic layer deposition method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Spin-transfer switching and thermal stability in an FePt/Au/FePt nanopillar prepared by alternate monatomic layer deposition|Kay Yakushiji,Shinji Yuasa,Taro Nagahama,Akio Fukushima,Hitoshi Kubota,Toshikazu Katayama,Koji Ando###
(215056, 215056)
 Nanopillarsconsisting of [Fe (1 monolayer (ML))/Pt (1 ML)]n<missing VAR> (n<missing VAR> the number of thealternation period) ferromagnetic layers and an Au spacer layer showedspin-transfer induced switching at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Spin-transfer switching and thermal stability in an FePt/Au/FePt nanopillar prepared by alternate monatomic layer deposition|Kay Yakushiji,Shinji Yuasa,Taro Nagahama,Akio Fukushima,Hitoshi Kubota,Toshikazu Katayama,Koji Ando###
(215069, 215069)
 Nanopillarsconsisting of [Fe (1 monolayer (ML))/Pt (1 ML)]n<missing VAR> (n<missing VAR> the number of thealternation period) ferromagnetic layers and an Au spacer layer showedspin-transfer induced switching at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Au
###Spin-transfer switching and thermal stability in an FePt/Au/FePt nanopillar prepared by alternate monatomic layer deposition|Kay Yakushiji,Shinji Yuasa,Taro Nagahama,Akio Fukushima,Hitoshi Kubota,Toshikazu Katayama,Koji Ando###
(215105, 215105)
 Nanopillarsconsisting of [Fe (1 monolayer (ML))/Pt (1 ML)]n<missing VAR> (n<missing VAR> the number of thealternation period) ferromagnetic layers and an Au spacer layer showedspin-transfer induced switching at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###Lateral magnetic anisotropy superlattice out of a single (Ga,Mn)As layer|R. G. Dengel,C. Gould,J. Wenisch,K. Brunner,G. Schmidt,L. W. Molenkamp###
(215154, 215154)
Lateral magnetic anisotropy superlattice out of a single (Ga,Mn)As layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Lateral magnetic anisotropy superlattice out of a single (Ga,Mn)As layer|R. G. Dengel,C. Gould,J. Wenisch,K. Brunner,G. Schmidt,L. W. Molenkamp###
(215156, 215156)
Lateral magnetic anisotropy superlattice out of a single (Ga,Mn)As layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Lateral magnetic anisotropy superlattice out of a single (Ga,Mn)As layer|R. G. Dengel,C. Gould,J. Wenisch,K. Brunner,G. Schmidt,L. W. Molenkamp###
(215158, 215158)
Lateral magnetic anisotropy superlattice out of a single (Ga,Mn)As layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###Lateral magnetic anisotropy superlattice out of a single (Ga,Mn)As layer|R. G. Dengel,C. Gould,J. Wenisch,K. Brunner,G. Schmidt,L. W. Molenkamp###
(215195, 215195)
 We use lithographically induced strain relaxation to periodically modulatethe magnetic anisotropy in a single (Ga,Mn)As layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Lateral magnetic anisotropy superlattice out of a single (Ga,Mn)As layer|R. G. Dengel,C. Gould,J. Wenisch,K. Brunner,G. Schmidt,L. W. Molenkamp###
(215197, 215197)
 We use lithographically induced strain relaxation to periodically modulatethe magnetic anisotropy in a single (Ga,Mn)As layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Lateral magnetic anisotropy superlattice out of a single (Ga,Mn)As layer|R. G. Dengel,C. Gould,J. Wenisch,K. Brunner,G. Schmidt,L. W. Molenkamp###
(215199, 215199)
 We use lithographically induced strain relaxation to periodically modulatethe magnetic anisotropy in a single (Ga,Mn)As layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.75Sr0.25MnO3
###Anisotropic Magnetoresistance in Manganites: Model and Experiment|Javier D. Fuhr,Mara Granada,Laura B. Steren,Blas Alascio###
(215318, 215324)
 We present measurements of anisotropic magnetoresistance ofLa0.75Sr0.25MnO3 films deposited on (001) SrTiO3 substrates, anddevelop a model to describe the low temperature AMR in manganites.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.05,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Anisotropic Magnetoresistance in Manganites: Model and Experiment|Javier D. Fuhr,Mara Granada,Laura B. Steren,Blas Alascio###
(215336, 215339)
 We present measurements of anisotropic magnetoresistance ofLa0.75Sr0.25MnO3 films deposited on (001) SrTiO3 substrates, anddevelop a model to describe the low temperature AMR in manganites.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Anisotropic Magnetoresistance in Manganites: Model and Experiment|Javier D. Fuhr,Mara Granada,Laura B. Steren,Blas Alascio###
(215401, 215401)
 We measurean AMR of the order of 10-3 for the current I parallel to the [100] axis ofthe crystal and vanishing AMR for I//[110], in agreement with the modelpredictions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Anisotropic Magnetoresistance in Manganites: Model and Experiment|Javier D. Fuhr,Mara Granada,Laura B. Steren,Blas Alascio###
(215432, 215432)
 We measurean AMR of the order of 10-3 for the current I parallel to the [100] axis ofthe crystal and vanishing AMR for I//[110], in agreement with the modelpredictions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###In-Plane Magnetoresistance on the Surface of Topological Insulator|Morteza Salehi,Mohammad Alidoust,Yousef Rahnavard,Gholamreza Rashedi###
(216051, 216051)
In-Plane Magnetoresistance on the Surface of Topological Insulator.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###In-Plane Magnetoresistance on the Surface of Topological Insulator|Morteza Salehi,Mohammad Alidoust,Yousef Rahnavard,Gholamreza Rashedi###
(216101, 216101)
 We study the tunneling magneto-transport properties of the FerromagneticInsulator-Normal Insulator-Ferromagnetic Insulator(FmidNmidF) andFerromagnetic Insulator-Barrier Insulator-Ferromagnetic Insulator(FmidBmidF) junctions on the surface of topological insulator in whichin-plane magnetization directions of both ferromagnetic sides can be paralleland antiparallel.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###In-Plane Magnetoresistance on the Surface of Topological Insulator|Morteza Salehi,Mohammad Alidoust,Yousef Rahnavard,Gholamreza Rashedi###
(216103, 216103)
 We study the tunneling magneto-transport properties of the FerromagneticInsulator-Normal Insulator-Ferromagnetic Insulator(FmidNmidF) andFerromagnetic Insulator-Barrier Insulator-Ferromagnetic Insulator(FmidBmidF) junctions on the surface of topological insulator in whichin-plane magnetization directions of both ferromagnetic sides can be paralleland antiparallel.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###In-Plane Magnetoresistance on the Surface of Topological Insulator|Morteza Salehi,Mohammad Alidoust,Yousef Rahnavard,Gholamreza Rashedi###
(216105, 216105)
 We study the tunneling magneto-transport properties of the FerromagneticInsulator-Normal Insulator-Ferromagnetic Insulator(FmidNmidF) andFerromagnetic Insulator-Barrier Insulator-Ferromagnetic Insulator(FmidBmidF) junctions on the surface of topological insulator in whichin-plane magnetization directions of both ferromagnetic sides can be paralleland antiparallel.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###In-Plane Magnetoresistance on the Surface of Topological Insulator|Morteza Salehi,Mohammad Alidoust,Yousef Rahnavard,Gholamreza Rashedi###
(216125, 216125)
 We study the tunneling magneto-transport properties of the FerromagneticInsulator-Normal Insulator-Ferromagnetic Insulator(FmidNmidF) andFerromagnetic Insulator-Barrier Insulator-Ferromagnetic Insulator(FmidBmidF) junctions on the surface of topological insulator in whichin-plane magnetization directions of both ferromagnetic sides can be paralleland antiparallel.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###In-Plane Magnetoresistance on the Surface of Topological Insulator|Morteza Salehi,Mohammad Alidoust,Yousef Rahnavard,Gholamreza Rashedi###
(216127, 216127)
 We study the tunneling magneto-transport properties of the FerromagneticInsulator-Normal Insulator-Ferromagnetic Insulator(FmidNmidF) andFerromagnetic Insulator-Barrier Insulator-Ferromagnetic Insulator(FmidBmidF) junctions on the surface of topological insulator in whichin-plane magnetization directions of both ferromagnetic sides can be paralleland antiparallel.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###In-Plane Magnetoresistance on the Surface of Topological Insulator|Morteza Salehi,Mohammad Alidoust,Yousef Rahnavard,Gholamreza Rashedi###
(216129, 216129)
 We study the tunneling magneto-transport properties of the FerromagneticInsulator-Normal Insulator-Ferromagnetic Insulator(FmidNmidF) andFerromagnetic Insulator-Barrier Insulator-Ferromagnetic Insulator(FmidBmidF) junctions on the surface of topological insulator in whichin-plane magnetization directions of both ferromagnetic sides can be paralleland antiparallel.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###In-Plane Magnetoresistance on the Surface of Topological Insulator|Morteza Salehi,Mohammad Alidoust,Yousef Rahnavard,Gholamreza Rashedi###
(216258, 216258)
 We use thin barrier approximation for investigating theFmidBmidF junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###In-Plane Magnetoresistance on the Surface of Topological Insulator|Morteza Salehi,Mohammad Alidoust,Yousef Rahnavard,Gholamreza Rashedi###
(216260, 216260)
 We use thin barrier approximation for investigating theFmidBmidF junction.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###In-Plane Magnetoresistance on the Surface of Topological Insulator|Morteza Salehi,Mohammad Alidoust,Yousef Rahnavard,Gholamreza Rashedi###
(216262, 216262)
 We use thin barrier approximation for investigating theFmidBmidF junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###In-Plane Magnetoresistance on the Surface of Topological Insulator|Morteza Salehi,Mohammad Alidoust,Yousef Rahnavard,Gholamreza Rashedi###
(216282, 216282)
 We find that although magnetoresistance of theFmidNmidF and FmidBmidF junctions are tunable by changing thestrength of magnetization texture, they show different behaviors with variationof magnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###In-Plane Magnetoresistance on the Surface of Topological Insulator|Morteza Salehi,Mohammad Alidoust,Yousef Rahnavard,Gholamreza Rashedi###
(216284, 216284)
 We find that although magnetoresistance of theFmidNmidF and FmidBmidF junctions are tunable by changing thestrength of magnetization texture, they show different behaviors with variationof magnetization.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###In-Plane Magnetoresistance on the Surface of Topological Insulator|Morteza Salehi,Mohammad Alidoust,Yousef Rahnavard,Gholamreza Rashedi###
(216286, 216286)
 We find that although magnetoresistance of theFmidNmidF and FmidBmidF junctions are tunable by changing thestrength of magnetization texture, they show different behaviors with variationof magnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###In-Plane Magnetoresistance on the Surface of Topological Insulator|Morteza Salehi,Mohammad Alidoust,Yousef Rahnavard,Gholamreza Rashedi###
(216290, 216290)
 We find that although magnetoresistance of theFmidNmidF and FmidBmidF junctions are tunable by changing thestrength of magnetization texture, they show different behaviors with variationof magnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###In-Plane Magnetoresistance on the Surface of Topological Insulator|Morteza Salehi,Mohammad Alidoust,Yousef Rahnavard,Gholamreza Rashedi###
(216292, 216292)
 We find that although magnetoresistance of theFmidNmidF and FmidBmidF junctions are tunable by changing thestrength of magnetization texture, they show different behaviors with variationof magnetization.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###In-Plane Magnetoresistance on the Surface of Topological Insulator|Morteza Salehi,Mohammad Alidoust,Yousef Rahnavard,Gholamreza Rashedi###
(216294, 216294)
 We find that although magnetoresistance of theFmidNmidF and FmidBmidF junctions are tunable by changing thestrength of magnetization texture, they show different behaviors with variationof magnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###In-Plane Magnetoresistance on the Surface of Topological Insulator|Morteza Salehi,Mohammad Alidoust,Yousef Rahnavard,Gholamreza Rashedi###
(216336, 216336)
 In contrast to the magnetoresistance of FmidNmidF,magnetoresistance of FmidBmidF junctions shows very smooth enhance byincreasing the strength of magnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###In-Plane Magnetoresistance on the Surface of Topological Insulator|Morteza Salehi,Mohammad Alidoust,Yousef Rahnavard,Gholamreza Rashedi###
(216348, 216348)
 In contrast to the magnetoresistance of FmidNmidF,magnetoresistance of FmidBmidF junctions shows very smooth enhance byincreasing the strength of magnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###In-Plane Magnetoresistance on the Surface of Topological Insulator|Morteza Salehi,Mohammad Alidoust,Yousef Rahnavard,Gholamreza Rashedi###
(216350, 216350)
 In contrast to the magnetoresistance of FmidNmidF,magnetoresistance of FmidBmidF junctions shows very smooth enhance byincreasing the strength of magnetization.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###In-Plane Magnetoresistance on the Surface of Topological Insulator|Morteza Salehi,Mohammad Alidoust,Yousef Rahnavard,Gholamreza Rashedi###
(216352, 216352)
 In contrast to the magnetoresistance of FmidNmidF,magnetoresistance of FmidBmidF junctions shows very smooth enhance byincreasing the strength of magnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###In-Plane Magnetoresistance on the Surface of Topological Insulator|Morteza Salehi,Mohammad Alidoust,Yousef Rahnavard,Gholamreza Rashedi###
(216360, 216360)
 In contrast to the magnetoresistance of FmidNmidF,magnetoresistance of FmidBmidF junctions shows very smooth enhance byincreasing the strength of magnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###In-Plane Magnetoresistance on the Surface of Topological Insulator|Morteza Salehi,Mohammad Alidoust,Yousef Rahnavard,Gholamreza Rashedi###
(216362, 216362)
 In contrast to the magnetoresistance of FmidNmidF,magnetoresistance of FmidBmidF junctions shows very smooth enhance byincreasing the strength of magnetization.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###In-Plane Magnetoresistance on the Surface of Topological Insulator|Morteza Salehi,Mohammad Alidoust,Yousef Rahnavard,Gholamreza Rashedi###
(216364, 216364)
 In contrast to the magnetoresistance of FmidNmidF,magnetoresistance of FmidBmidF junctions shows very smooth enhance byincreasing the strength of magnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.67Sr0.33MnO3
###Colossal enhancement of magnetoresistance in La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ / Pr$_{0.67}$Ca$_{0.33}$MnO$_{3}$ multilayers: reproducing the phase-separation scenario|Soumik Mukhopadhyay,I. Das###
(216432, 216438)
Colossal enhancement of magnetoresistance in La0.67Sr0.33MnO3 / Pr0.67Ca0.33MnO3 multilayers reproducing the phase-separation scenario.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.066,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.134,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pr0.67Ca0.33MnO3
###Colossal enhancement of magnetoresistance in La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ / Pr$_{0.67}$Ca$_{0.33}$MnO$_{3}$ multilayers: reproducing the phase-separation scenario|Soumik Mukhopadhyay,I. Das###
(216442, 216448)
Colossal enhancement of magnetoresistance in La0.67Sr0.33MnO3 / Pr0.67Ca0.33MnO3 multilayers reproducing the phase-separation scenario.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.066,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.134,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe3O4/MgO/Fe
###Tunnel magnetoresistance of Fe3O4/MgO/Fe nanostructures|S. G. Chigarev,E. M. Epshtein,I. V. Malikov,G. M. Mikhailov,P. E. Zilberman###
(216731, 216739)
Tunnel magnetoresistance of Fe3O4/MgO/Fe nanostructures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Fe3O4/MgO/Fe
###Tunnel magnetoresistance of Fe3O4/MgO/Fe nanostructures|S. G. Chigarev,E. M. Epshtein,I. V. Malikov,G. M. Mikhailov,P. E. Zilberman###
(216752, 216760)
 A magnetic tunnel junction Fe3O4/MgO/Fe with (001) layer orientation isconsidered.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

In
###Tunnel magnetoresistance of Fe3O4/MgO/Fe nanostructures|S. G. Chigarev,E. M. Epshtein,I. V. Malikov,G. M. Mikhailov,P. E. Zilberman###
(216851, 216851)
 In contrast with junctions with unidirectional anisotropy, asubstantially lower magnetic field is required for the junction switching.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin-thermo-electronic oscillator based on inverse giant magnetoresistance|A. M. Kadigrobov,S. Andersson,Hee Chul Park,D. Radic,R. I. Shekhter,M. Jonson,V. Korenivski###
(216961, 216961)
 The structure has S-shapedcurrent-voltage characteristics and can exhibit spontaneous oscillations whenintegrated with a conventional capacitor within a resonator circuit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Tailoring magnetoresistance through rotating Ni particles|Steven Achilles,Michael Czerner,Ingrid Mertig###
(217195, 217195)
Tailoring magnetoresistance through rotating Ni particles.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 50, '%', 2]

Ni
###Tailoring magnetoresistance through rotating Ni particles|Steven Achilles,Michael Czerner,Ingrid Mertig###
(217215, 217215)
 We present textitab initio studies for different Ni nanocontacts and showchanges in the conductance of such constrictions due to atomic rearrangementsin the contact.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 50, '%', 1]

In
###Tailoring magnetoresistance through rotating Ni particles|Steven Achilles,Michael Czerner,Ingrid Mertig###
(217254, 217254)
 In particular we consider a Ni particle and show that themagnetoresistance can change from a few to 50% and can even reverse sign as afunction of the contact area formed between the particle and the leads.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 50, '%', 0]

Ni
###Tailoring magnetoresistance through rotating Ni particles|Steven Achilles,Michael Czerner,Ingrid Mertig###
(217264, 217264)
 In particular we consider a Ni particle and show that themagnetoresistance can change from a few to 50% and can even reverse sign as afunction of the contact area formed between the particle and the leads.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 50, '%', 0]

I
###Weak Localization and Antilocalization in Topological Insulator Thin Films with Coherent Bulk-Surface Coupling|Ion Garate,Leonid Glazman###
(217415, 217415)
 We evaluate quantum corrections to conductivity in an electrically gated thinfilm of a three-dimensional (3D) topological insulator (T<missing VAR>I).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiBi3
###Surface-induced Magnetism Fluctuations in Single Crystal of NiBi3 Superconductor|Xiangde Zhu,Hechang Lei,C. Petrovic,Yuheng Zhang###
(217534, 217536)
Surface-induced Magnetism Fluctuations in Single Crystal of NiBi3 Superconductor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 4.06, 'K', 1],[87.0, 300, 'K', 2],[128.0, 150, 'K', 3]

NiBi3
###Surface-induced Magnetism Fluctuations in Single Crystal of NiBi3 Superconductor|Xiangde Zhu,Hechang Lei,C. Petrovic,Yuheng Zhang###
(217559, 217561)
 We report anistropy in superconducting and normal state of NiBi3 singlecrystals with Tc  4.06 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 4.06, 'K', 0],[62.0, 300, 'K', 1],[103.0, 150, 'K', 2]

Tc
###Surface-induced Magnetism Fluctuations in Single Crystal of NiBi3 Superconductor|Xiangde Zhu,Hechang Lei,C. Petrovic,Yuheng Zhang###
(217570, 217570)
 We report anistropy in superconducting and normal state of NiBi3 singlecrystals with Tc  4.06 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 4.06, 'K', 0],[53.0, 300, 'K', 1],[94.0, 150, 'K', 2]

B
###Electrical spin injection into graphene through monolayer hexagonal boron nitride|Takehiro Yamaguchi,Yoshihisa Inoue,Satoru Masubuchi,Sei Morikawa,Masahiro Onuki,Kenji Watanabe,Takashi Taniguchi,Rai Moriya,Tomoki Machida###
(217722, 217722)
 We demonstrate electrical spin injection from a ferromagnet to a bilayergraphene (BLG) through a monolayer (ML) of single-crystal hexagonal boronnitride (h<missing VAR>-BN).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Electrical spin injection into graphene through monolayer hexagonal boron nitride|Takehiro Yamaguchi,Yoshihisa Inoue,Satoru Masubuchi,Sei Morikawa,Masahiro Onuki,Kenji Watanabe,Takashi Taniguchi,Rai Moriya,Tomoki Machida###
(217755, 217755)
 We demonstrate electrical spin injection from a ferromagnet to a bilayergraphene (BLG) through a monolayer (ML) of single-crystal hexagonal boronnitride (h<missing VAR>-BN).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni81Fe19
###Electrical spin injection into graphene through monolayer hexagonal boron nitride|Takehiro Yamaguchi,Yoshihisa Inoue,Satoru Masubuchi,Sei Morikawa,Masahiro Onuki,Kenji Watanabe,Takashi Taniguchi,Rai Moriya,Tomoki Machida###
(217761, 217764)
 A Ni81Fe19/ML h<missing VAR>-BN/BLG/h<missing VAR>-BN structure is fabricated using amicromechanical cleavage and dry transfer technique.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.19,0,0.81,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BN/B
###Electrical spin injection into graphene through monolayer hexagonal boron nitride|Takehiro Yamaguchi,Yoshihisa Inoue,Satoru Masubuchi,Sei Morikawa,Masahiro Onuki,Kenji Watanabe,Takashi Taniguchi,Rai Moriya,Tomoki Machida###
(217771, 217774)
 A Ni81Fe19/ML h<missing VAR>-BN/BLG/h<missing VAR>-BN structure is fabricated using amicromechanical cleavage and dry transfer technique.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

BN
###Electrical spin injection into graphene through monolayer hexagonal boron nitride|Takehiro Yamaguchi,Yoshihisa Inoue,Satoru Masubuchi,Sei Morikawa,Masahiro Onuki,Kenji Watanabe,Takashi Taniguchi,Rai Moriya,Tomoki Machida###
(217780, 217781)
 A Ni81Fe19/ML h<missing VAR>-BN/BLG/h<missing VAR>-BN structure is fabricated using amicromechanical cleavage and dry transfer technique.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BN
###Electrical spin injection into graphene through monolayer hexagonal boron nitride|Takehiro Yamaguchi,Yoshihisa Inoue,Satoru Masubuchi,Sei Morikawa,Masahiro Onuki,Kenji Watanabe,Takashi Taniguchi,Rai Moriya,Tomoki Machida###
(217823, 217824)
 The transport propertiesacross the ML h<missing VAR>-BN layer exhibit tunnel barrier characteristics.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Electrical spin injection into graphene through monolayer hexagonal boron nitride|Takehiro Yamaguchi,Yoshihisa Inoue,Satoru Masubuchi,Sei Morikawa,Masahiro Onuki,Kenji Watanabe,Takashi Taniguchi,Rai Moriya,Tomoki Machida###
(217844, 217844)
 Spin injectioninto BLG has been detected through non local magnetoresistance measurements.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeCo/MgO/FeCo
###Influence of the magnetic material on tunneling magnetoresistance and spin-transfer torque in tunnel junctions: Ab initio studies|Christian Franz,Michael Czerner,Christian Heiliger###
(217931, 217938)
 The dependence of tunneling magnetoresistance and spin-transfer torque inFeCo/MgO/FeCo tunnel junctions on the Co concentration and the bias voltage areinvestigated ab initio.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Co
###Influence of the magnetic material on tunneling magnetoresistance and spin-transfer torque in tunnel junctions: Ab initio studies|Christian Franz,Michael Czerner,Christian Heiliger###
(217948, 217948)
 The dependence of tunneling magnetoresistance and spin-transfer torque inFeCo/MgO/FeCo tunnel junctions on the Co concentration and the bias voltage areinvestigated ab initio.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Influence of the magnetic material on tunneling magnetoresistance and spin-transfer torque in tunnel junctions: Ab initio studies|Christian Franz,Michael Czerner,Christian Heiliger###
(217989, 217989)
 We find that the tunneling magnetoresistance decreaseswith the Co concentration in contradiction with previous calculations but inagreement with recent experiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Influence of the magnetic material on tunneling magnetoresistance and spin-transfer torque in tunnel junctions: Ab initio studies|Christian Franz,Michael Czerner,Christian Heiliger###
(218194, 218194)
 In particular, the linear slope of the in-plane torqueis independent of the concentration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Influence of the magnetic material on tunneling magnetoresistance and spin-transfer torque in tunnel junctions: Ab initio studies|Christian Franz,Michael Czerner,Christian Heiliger###
(218266, 218266)
 For high bias voltages the in-plane torqueshows a strong nonlinear deviation from the linear slope for high Coconcentrations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nb
###Superconducting nanowire quantum interference device based on Nb ultrathin films deposited on self-assembled porous Si templates|C. Cirillo,S. L. Prischepa,M. Trezza,V. P. Bondarenko,C. Attanasio###
(218597, 218597)
Superconducting nanowire quantum interference device based on Nb ultrathin films deposited on self-assembled porous Si templates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Superconducting nanowire quantum interference device based on Nb ultrathin films deposited on self-assembled porous Si templates|C. Cirillo,S. L. Prischepa,M. Trezza,V. P. Bondarenko,C. Attanasio###
(218613, 218613)
Superconducting nanowire quantum interference device based on Nb ultrathin films deposited on self-assembled porous Si templates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nb
###Superconducting nanowire quantum interference device based on Nb ultrathin films deposited on self-assembled porous Si templates|C. Cirillo,S. L. Prischepa,M. Trezza,V. P. Bondarenko,C. Attanasio###
(218637, 218637)
 Magnetoresistance oscillations were observed on networks of superconductingultrathin Nb nanowires presenting evidences of either thermal or quantumactivated phase slips.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C60
###Magnetoresistance in multilayer fullerene spin valves: a first-principles study|Deniz Çakır,Diana M. Otálvaro,Geert Brocks###
(218842, 218843)
 We calculate the electronic transport from first principles through spinvalves comprising bi- and tri-layers of the fullerene molecules C60 and C70,sandwiched between two Fe electrodes.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 90, '%', 3],[127.0, 100, '%', 3]

C70
###Magnetoresistance in multilayer fullerene spin valves: a first-principles study|Deniz Çakır,Diana M. Otálvaro,Geert Brocks###
(218847, 218848)
 We calculate the electronic transport from first principles through spinvalves comprising bi- and tri-layers of the fullerene molecules C60 and C70,sandwiched between two Fe electrodes.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 90, '%', 3],[122.0, 100, '%', 3]

Fe
###Magnetoresistance in multilayer fullerene spin valves: a first-principles study|Deniz Çakır,Diana M. Otálvaro,Geert Brocks###
(218858, 218858)
 We calculate the electronic transport from first principles through spinvalves comprising bi- and tri-layers of the fullerene molecules C60 and C70,sandwiched between two Fe electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 90, '%', 3],[112.0, 100, '%', 3]

CP
###Magnetoresistance in multilayer fullerene spin valves: a first-principles study|Deniz Çakır,Diana M. Otálvaro,Geert Brocks###
(218950, 218951)
 A high current polarization (CP > 90%)and magnetoresistance (MR > 100%) at small bias can be attained using C70layers.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 90, '%', 0],[19.0, 100, '%', 0]

C70
###Magnetoresistance in multilayer fullerene spin valves: a first-principles study|Deniz Çakır,Diana M. Otálvaro,Geert Brocks###
(218988, 218989)
 A high current polarization (CP > 90%)and magnetoresistance (MR > 100%) at small bias can be attained using C70layers.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 90, '%', 0],[18.0, 100, '%', 0]

In
###Magnetoresistance in multilayer fullerene spin valves: a first-principles study|Deniz Çakır,Diana M. Otálvaro,Geert Brocks###
(218995, 218995)
 In contrast, the current polarization and the magnetoresistance atsmall bias are vanishingly small for C60 layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 90, '%', 1],[25.0, 100, '%', 1]

C60
###Magnetoresistance in multilayer fullerene spin valves: a first-principles study|Deniz Çakır,Diana M. Otálvaro,Geert Brocks###
(219027, 219028)
 In contrast, the current polarization and the magnetoresistance atsmall bias are vanishingly small for C60 layers.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 90, '%', 1],[57.0, 100, '%', 1]

C60
###Magnetoresistance in multilayer fullerene spin valves: a first-principles study|Deniz Çakır,Diana M. Otálvaro,Geert Brocks###
(219066, 219067)
 Exploiting a generalizedJulliere model we can trace the differences in spin-dependent transportbetween C60 and C70 layers to differences between the molecule-metal interfacestates.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 90, '%', 2],[96.0, 100, '%', 2]

C70
###Magnetoresistance in multilayer fullerene spin valves: a first-principles study|Deniz Çakır,Diana M. Otálvaro,Geert Brocks###
(219071, 219072)
 Exploiting a generalizedJulliere model we can trace the differences in spin-dependent transportbetween C60 and C70 layers to differences between the molecule-metal interfacestates.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 90, '%', 2],[101.0, 100, '%', 2]

II
###Vortex crossing and trapping in doubly connected mesoscopic loops of a single-crystal type II superconductor|Shaun A. Mills,Chenyi Shen,Zhuan Xu,Ying Liu###
(219174, 219175)
Vortex crossing and trapping in doubly connected mesoscopic loops of a single-crystal type II superconductor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Vortex crossing and trapping in doubly connected mesoscopic loops of a single-crystal type II superconductor|Shaun A. Mills,Chenyi Shen,Zhuan Xu,Ying Liu###
(219198, 219199)
 Numerical calculations on a mesoscopic ring of a type II superconductor inthe London limit suggest that an Abrikosov vortex can be trapped in such astructure above a critical magnetic field and generate a phase shift in themagnetoresistance oscillations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Vortex crossing and trapping in doubly connected mesoscopic loops of a single-crystal type II superconductor|Shaun A. Mills,Chenyi Shen,Zhuan Xu,Ying Liu###
(219289, 219290)
 We prepared submicron-sized superconductingloops of single-crystal, type II superconductor NbSe2 and measuredmagnetoresistance oscillations resulting from vortices crossing the loops.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbSe2
###Vortex crossing and trapping in doubly connected mesoscopic loops of a single-crystal type II superconductor|Shaun A. Mills,Chenyi Shen,Zhuan Xu,Ying Liu###
(219294, 219296)
 We prepared submicron-sized superconductingloops of single-crystal, type II superconductor NbSe2 and measuredmagnetoresistance oscillations resulting from vortices crossing the loops.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbSe2
###Vortex crossing and trapping in doubly connected mesoscopic loops of a single-crystal type II superconductor|Shaun A. Mills,Chenyi Shen,Zhuan Xu,Ying Liu###
(219525, 219527)
 The controlled crossing and trapping of vortices demonstrated inour NbSe2 devices provide a starting point for the manipulation ofindividual Abrikosov vortices, which is useful for future technologies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CPP
###Calculation method of spin accumulations and spin signals in nanostructures using spin resistors|W. Savero Torres,A. Marty,P. Laczkowski,L. Vila,M. Jamet,J-P. Attané###
(219692, 219694)
 This can be used both for CPPexperiments in multilayers and for multiterminal nanostructures made ofsemiconductors, oxides, metals and carbon allotropes.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Longitudinal magnetoconductivity and magnetodielectric effect in bilayer graphene|U. Zülicke,R Winkler###
(219937, 219937)
 It was recently shown that a finite imbalance between electron densities inthe mathbfK and mathbfK valleys of bilayer graphene induces amagnetoelectric coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Longitudinal magnetoconductivity and magnetodielectric effect in bilayer graphene|U. Zülicke,R Winkler###
(219942, 219942)
 It was recently shown that a finite imbalance between electron densities inthe mathbfK and mathbfK valleys of bilayer graphene induces amagnetoelectric coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Magnetoresistance of compensated semimetals in confined geometries|P. S. Alekseev,A. P. Dmitriev,I. V. Gornyi,V. Yu. Kachorovskii,B. N. Narozhny,M. Schütt,M. Titov###
(220300, 220300)
 As theresult, classical edge currents may dominate the resistance in the vicinity ofcharge compensation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magnetoresistance of compensated semimetals in confined geometries|P. S. Alekseev,A. P. Dmitriev,I. V. Gornyi,V. Yu. Kachorovskii,B. N. Narozhny,M. Schütt,M. Titov###
(220368, 220368)
 In three dimensions, themagnetoresistance is normally quadratic in the field, with the linear regimerestricted to rectangular samples with magnetic field directed perpendicular tothe sample surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Magnetothermopower and magnetoresistance of single Co-Ni/Cu multilayered nanowires|Tim Böhnert,Anna Corinna Niemann,Ann-Kathrin Michel,Svenja Bäßler,Johannes Gooth,Bence G. Tóth,Katalin Neuróhr,László Péter,Imre Bakonyi,Victor Vega,Victor M. Prida,Kornelius Nielsch###
(220479, 220479)
Magnetothermopower and magnetoresistance of single Co-Ni/Cu multilayered nanowires.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 325, 'K', 2]

Ni/Cu
###Magnetothermopower and magnetoresistance of single Co-Ni/Cu multilayered nanowires|Tim Böhnert,Anna Corinna Niemann,Ann-Kathrin Michel,Svenja Bäßler,Johannes Gooth,Bence G. Tóth,Katalin Neuróhr,László Péter,Imre Bakonyi,Victor Vega,Victor M. Prida,Kornelius Nielsch###
(220481, 220483)
Magnetothermopower and magnetoresistance of single Co-Ni/Cu multilayered nanowires.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[85.0, 325, 'K', 2]

Co
###Magnetothermopower and magnetoresistance of single Co-Ni/Cu multilayered nanowires|Tim Böhnert,Anna Corinna Niemann,Ann-Kathrin Michel,Svenja Bäßler,Johannes Gooth,Bence G. Tóth,Katalin Neuróhr,László Péter,Imre Bakonyi,Victor Vega,Victor M. Prida,Kornelius Nielsch###
(220504, 220504)
 The magnetothermopower and the magnetoresistance of single Co Ni/Cumultilayered nan-owires with various thicknesses of the Cu spacer areinvestigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 325, 'K', 1]

Ni/Cu
###Magnetothermopower and magnetoresistance of single Co-Ni/Cu multilayered nanowires|Tim Böhnert,Anna Corinna Niemann,Ann-Kathrin Michel,Svenja Bäßler,Johannes Gooth,Bence G. Tóth,Katalin Neuróhr,László Péter,Imre Bakonyi,Victor Vega,Victor M. Prida,Kornelius Nielsch###
(220506, 220508)
 The magnetothermopower and the magnetoresistance of single Co Ni/Cumultilayered nan-owires with various thicknesses of the Cu spacer areinvestigated.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[60.0, 325, 'K', 1]

Cu
###Magnetothermopower and magnetoresistance of single Co-Ni/Cu multilayered nanowires|Tim Böhnert,Anna Corinna Niemann,Ann-Kathrin Michel,Svenja Bäßler,Johannes Gooth,Bence G. Tóth,Katalin Neuróhr,László Péter,Imre Bakonyi,Victor Vega,Victor M. Prida,Kornelius Nielsch###
(220527, 220527)
 The magnetothermopower and the magnetoresistance of single Co Ni/Cumultilayered nan-owires with various thicknesses of the Cu spacer areinvestigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 325, 'K', 1]

K
###Magnetothermopower and magnetoresistance of single Co-Ni/Cu multilayered nanowires|Tim Böhnert,Anna Corinna Niemann,Ann-Kathrin Michel,Svenja Bäßler,Johannes Gooth,Bence G. Tóth,Katalin Neuróhr,László Péter,Imre Bakonyi,Victor Vega,Victor M. Prida,Kornelius Nielsch###
(220565, 220565)
 Both kinds of measurement have been performed as a function oftemperature (50 K to 325 K) and under applied magnetic fields perpendicular tothe nanowire axis, with magnitudes up to 15 % at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 325, 'K', 0]

S
###Magnetothermopower and magnetoresistance of single Co-Ni/Cu multilayered nanowires|Tim Böhnert,Anna Corinna Niemann,Ann-Kathrin Michel,Svenja Bäßler,Johannes Gooth,Bence G. Tóth,Katalin Neuróhr,László Péter,Imre Bakonyi,Victor Vega,Victor M. Prida,Kornelius Nielsch###
(220623, 220623)
 A linearrelation between thermopower S and electrical conductivity sigma of thenanowires is found, with the magnetic field as an implicit variable.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 325, 'K', 1]

S
###Magnetothermopower and magnetoresistance of single Co-Ni/Cu multilayered nanowires|Tim Böhnert,Anna Corinna Niemann,Ann-Kathrin Michel,Svenja Bäßler,Johannes Gooth,Bence G. Tóth,Katalin Neuróhr,László Péter,Imre Bakonyi,Victor Vega,Victor M. Prida,Kornelius Nielsch###
(220675, 220675)
 Combiningthe linear behavior of the S vs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 325, 'K', 2]

In
###Magnetothermopower and magnetoresistance of single Co-Ni/Cu multilayered nanowires|Tim Böhnert,Anna Corinna Niemann,Ann-Kathrin Michel,Svenja Bäßler,Johannes Gooth,Bence G. Tóth,Katalin Neuróhr,László Péter,Imre Bakonyi,Victor Vega,Victor M. Prida,Kornelius Nielsch###
(220711, 220711)
 In order to extract the truenanowire materials parameters from the measured thermopower, a simple modelbased on the Mott formula is employed to distinguish the individual thermopowercontributions of the sample.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 325, 'K', 4]

Pt/YI
###Impact of the interface quality of Pt/YIG(111) hybrids on their spin Hall magnetoresistance|Sabine Pütter,Stephan Geprägs,Richard Schlitz,Matthias Althammer,Andreas Erb,Rudolf Gross,Sebastian T. B. Goennenwein###
(220975, 220978)
Impact of the interface quality of Pt/YIG<missing VAR>(111) hybrids on their spin Hall magnetoresistance.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

O12
###Impact of the interface quality of Pt/YIG(111) hybrids on their spin Hall magnetoresistance|Sabine Pütter,Stephan Geprägs,Richard Schlitz,Matthias Althammer,Andreas Erb,Rudolf Gross,Sebastian T. B. Goennenwein###
(221022, 221023)
 We study the influence of the interface quality ofPt/Y3Fe5O12(111) hybrids on their spin Hall magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O12
###Impact of the interface quality of Pt/YIG(111) hybrids on their spin Hall magnetoresistance|Sabine Pütter,Stephan Geprägs,Richard Schlitz,Matthias Althammer,Andreas Erb,Rudolf Gross,Sebastian T. B. Goennenwein###
(221056, 221057)
 Thisis achieved by exposing Y3Fe5O12(111) single crystal substrates todifferent well-defined surface treatments prior to the Pt deposition.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Impact of the interface quality of Pt/YIG(111) hybrids on their spin Hall magnetoresistance|Sabine Pütter,Stephan Geprägs,Richard Schlitz,Matthias Althammer,Andreas Erb,Rudolf Gross,Sebastian T. B. Goennenwein###
(221087, 221087)
 Thisis achieved by exposing Y3Fe5O12(111) single crystal substrates todifferent well-defined surface treatments prior to the Pt deposition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O12
###Impact of the interface quality of Pt/YIG(111) hybrids on their spin Hall magnetoresistance|Sabine Pütter,Stephan Geprägs,Richard Schlitz,Matthias Althammer,Andreas Erb,Rudolf Gross,Sebastian T. B. Goennenwein###
(221105, 221106)
 Thequality of the Y3Fe5O12(YIG) surface, the Pt/YIG<missing VAR> interface and thePt layer is monitored textitin-situ by reflection high-energy electrondiffraction and Auger electron spectroscopy as well as textitex-situ byatomic force microscopy and x<missing VAR>-ray diffraction.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YI
###Impact of the interface quality of Pt/YIG(111) hybrids on their spin Hall magnetoresistance|Sabine Pütter,Stephan Geprägs,Richard Schlitz,Matthias Althammer,Andreas Erb,Rudolf Gross,Sebastian T. B. Goennenwein###
(221108, 221109)
 Thequality of the Y3Fe5O12(YIG) surface, the Pt/YIG<missing VAR> interface and thePt layer is monitored textitin-situ by reflection high-energy electrondiffraction and Auger electron spectroscopy as well as textitex-situ byatomic force microscopy and x<missing VAR>-ray diffraction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt/YI
###Impact of the interface quality of Pt/YIG(111) hybrids on their spin Hall magnetoresistance|Sabine Pütter,Stephan Geprägs,Richard Schlitz,Matthias Althammer,Andreas Erb,Rudolf Gross,Sebastian T. B. Goennenwein###
(221118, 221121)
 Thequality of the Y3Fe5O12(YIG) surface, the Pt/YIG<missing VAR> interface and thePt layer is monitored textitin-situ by reflection high-energy electrondiffraction and Auger electron spectroscopy as well as textitex-situ byatomic force microscopy and x<missing VAR>-ray diffraction.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Pt
###Impact of the interface quality of Pt/YIG(111) hybrids on their spin Hall magnetoresistance|Sabine Pütter,Stephan Geprägs,Richard Schlitz,Matthias Althammer,Andreas Erb,Rudolf Gross,Sebastian T. B. Goennenwein###
(221131, 221131)
 Thequality of the Y3Fe5O12(YIG) surface, the Pt/YIG<missing VAR> interface and thePt layer is monitored textitin-situ by reflection high-energy electrondiffraction and Auger electron spectroscopy as well as textitex-situ byatomic force microscopy and x<missing VAR>-ray diffraction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt/YI
###Impact of the interface quality of Pt/YIG(111) hybrids on their spin Hall magnetoresistance|Sabine Pütter,Stephan Geprägs,Richard Schlitz,Matthias Althammer,Andreas Erb,Rudolf Gross,Sebastian T. B. Goennenwein###
(221263, 221266)
 The largest spin Hall magnetoresistance is found in Pt/YIG<missing VAR>fabricated by a two-step surface treatment consisting of a piranha etchprocess followed by an annealing step at 500circC in pure oxygenatmosphere.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

C
###Impact of the interface quality of Pt/YIG(111) hybrids on their spin Hall magnetoresistance|Sabine Pütter,Stephan Geprägs,Richard Schlitz,Matthias Althammer,Andreas Erb,Rudolf Gross,Sebastian T. B. Goennenwein###
(221311, 221311)
 The largest spin Hall magnetoresistance is found in Pt/YIG<missing VAR>fabricated by a two-step surface treatment consisting of a piranha etchprocess followed by an annealing step at 500circC in pure oxygenatmosphere.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Impact of the interface quality of Pt/YIG(111) hybrids on their spin Hall magnetoresistance|Sabine Pütter,Stephan Geprägs,Richard Schlitz,Matthias Althammer,Andreas Erb,Rudolf Gross,Sebastian T. B. Goennenwein###
(221335, 221335)
 Our data suggest that the small SMR in Pt/YIG<missing VAR> without any surfacetreatments of the YIG<missing VAR> substrate prior to Pt deposition is caused by aconsiderable carbon agglomeration at the Y3Fe5O12 surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt/YI
###Impact of the interface quality of Pt/YIG(111) hybrids on their spin Hall magnetoresistance|Sabine Pütter,Stephan Geprägs,Richard Schlitz,Matthias Althammer,Andreas Erb,Rudolf Gross,Sebastian T. B. Goennenwein###
(221341, 221344)
 Our data suggest that the small SMR in Pt/YIG<missing VAR> without any surfacetreatments of the YIG<missing VAR> substrate prior to Pt deposition is caused by aconsiderable carbon agglomeration at the Y3Fe5O12 surface.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

YI
###Impact of the interface quality of Pt/YIG(111) hybrids on their spin Hall magnetoresistance|Sabine Pütter,Stephan Geprägs,Richard Schlitz,Matthias Althammer,Andreas Erb,Rudolf Gross,Sebastian T. B. Goennenwein###
(221360, 221361)
 Our data suggest that the small SMR in Pt/YIG<missing VAR> without any surfacetreatments of the YIG<missing VAR> substrate prior to Pt deposition is caused by aconsiderable carbon agglomeration at the Y3Fe5O12 surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Impact of the interface quality of Pt/YIG(111) hybrids on their spin Hall magnetoresistance|Sabine Pütter,Stephan Geprägs,Richard Schlitz,Matthias Althammer,Andreas Erb,Rudolf Gross,Sebastian T. B. Goennenwein###
(221370, 221370)
 Our data suggest that the small SMR in Pt/YIG<missing VAR> without any surfacetreatments of the YIG<missing VAR> substrate prior to Pt deposition is caused by aconsiderable carbon agglomeration at the Y3Fe5O12 surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Y3Fe5O12
###Impact of the interface quality of Pt/YIG(111) hybrids on their spin Hall magnetoresistance|Sabine Pütter,Stephan Geprägs,Richard Schlitz,Matthias Althammer,Andreas Erb,Rudolf Gross,Sebastian T. B. Goennenwein###
(221393, 221398)
 Our data suggest that the small SMR in Pt/YIG<missing VAR> without any surfacetreatments of the YIG<missing VAR> substrate prior to Pt deposition is caused by aconsiderable carbon agglomeration at the Y3Fe5O12 surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Evidence of Electron-Hole Imbalance in WTe2 from High-Resolution Angle-Resolved Photoemission Spectroscopy|Chenlu Wang,Yan Zhang,Jianwei Huang,Guodong Liu,Aiji Liang,Yuxiao Zhang,Bing Shen,Jing Liu,Cheng Hu,Ying Ding,Defa Liu,Yong Hu,Shaolong He,Lin Zhao,Li Yu,Jin Hu,Jiang Wei,Zhiqiang Mao,Youguo Shi,Xiaowen Jia,Fengfeng Zhang,Shenjin Zhang,Feng Yang,Zhimin Wang,Qinjun Peng,Zuyan Xu,Chuangtian Chen,X. J. Zhou###
(221423, 221425)
Evidence of Electron-Hole Imbalance in WTe2 from High-Resolution Angle-Resolved Photoemission Spectroscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Evidence of Electron-Hole Imbalance in WTe2 from High-Resolution Angle-Resolved Photoemission Spectroscopy|Chenlu Wang,Yan Zhang,Jianwei Huang,Guodong Liu,Aiji Liang,Yuxiao Zhang,Bing Shen,Jing Liu,Cheng Hu,Ying Ding,Defa Liu,Yong Hu,Shaolong He,Lin Zhao,Li Yu,Jin Hu,Jiang Wei,Zhiqiang Mao,Youguo Shi,Xiaowen Jia,Fengfeng Zhang,Shenjin Zhang,Feng Yang,Zhimin Wang,Qinjun Peng,Zuyan Xu,Chuangtian Chen,X. J. Zhou###
(221442, 221444)
 WTe2 has attracted a great deal of attention because it exhibits extremelylarge and nonsaturating magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Evidence of Electron-Hole Imbalance in WTe2 from High-Resolution Angle-Resolved Photoemission Spectroscopy|Chenlu Wang,Yan Zhang,Jianwei Huang,Guodong Liu,Aiji Liang,Yuxiao Zhang,Bing Shen,Jing Liu,Cheng Hu,Ying Ding,Defa Liu,Yong Hu,Shaolong He,Lin Zhao,Li Yu,Jin Hu,Jiang Wei,Zhiqiang Mao,Youguo Shi,Xiaowen Jia,Fengfeng Zhang,Shenjin Zhang,Feng Yang,Zhimin Wang,Qinjun Peng,Zuyan Xu,Chuangtian Chen,X. J. Zhou###
(221547, 221549)
 Utilizing laser-basedangle-resolved photoemission spectroscopy with high energy and momentumresolutions, we reveal the complete electronic structure of WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Evidence of Electron-Hole Imbalance in WTe2 from High-Resolution Angle-Resolved Photoemission Spectroscopy|Chenlu Wang,Yan Zhang,Jianwei Huang,Guodong Liu,Aiji Liang,Yuxiao Zhang,Bing Shen,Jing Liu,Cheng Hu,Ying Ding,Defa Liu,Yong Hu,Shaolong He,Lin Zhao,Li Yu,Jin Hu,Jiang Wei,Zhiqiang Mao,Youguo Shi,Xiaowen Jia,Fengfeng Zhang,Shenjin Zhang,Feng Yang,Zhimin Wang,Qinjun Peng,Zuyan Xu,Chuangtian Chen,X. J. Zhou###
(221748, 221750)
 Our results are not consistent with theperfect electron-hole compensation picture that is commonly considered to bethe cause of the unusual magnetoresistance in WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Evidence of Electron-Hole Imbalance in WTe2 from High-Resolution Angle-Resolved Photoemission Spectroscopy|Chenlu Wang,Yan Zhang,Jianwei Huang,Guodong Liu,Aiji Liang,Yuxiao Zhang,Bing Shen,Jing Liu,Cheng Hu,Ying Ding,Defa Liu,Yong Hu,Shaolong He,Lin Zhao,Li Yu,Jin Hu,Jiang Wei,Zhiqiang Mao,Youguo Shi,Xiaowen Jia,Fengfeng Zhang,Shenjin Zhang,Feng Yang,Zhimin Wang,Qinjun Peng,Zuyan Xu,Chuangtian Chen,X. J. Zhou###
(221833, 221835)
 Such a flat band can play an important rolein dictating the transport properties of WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Evidence of Electron-Hole Imbalance in WTe2 from High-Resolution Angle-Resolved Photoemission Spectroscopy|Chenlu Wang,Yan Zhang,Jianwei Huang,Guodong Liu,Aiji Liang,Yuxiao Zhang,Bing Shen,Jing Liu,Cheng Hu,Ying Ding,Defa Liu,Yong Hu,Shaolong He,Lin Zhao,Li Yu,Jin Hu,Jiang Wei,Zhiqiang Mao,Youguo Shi,Xiaowen Jia,Fengfeng Zhang,Shenjin Zhang,Feng Yang,Zhimin Wang,Qinjun Peng,Zuyan Xu,Chuangtian Chen,X. J. Zhou###
(221867, 221869)
 Our results provide new insighton understanding the origin of the unusual magnetoresistance in WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Observation of transverse spin Nernst magnetoresistance induced by thermal spin current in ferromagnet/non-magnet bilayers|Dong-Jun Kim,Chul-Yeon Jeon,Jong-Guk Choi,Jae Wook Lee,Srivathsava Surabhi,Jong-Ryul Jeong,Kyung-Jin Lee,Byong-Guk Park###
(222029, 222029)
 Here, we report spin Nernsteffect-induced transverse magnetoresistance in ferromagnet (FM)/non-magneticheavy metal (HM) bilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Observation of transverse spin Nernst magnetoresistance induced by thermal spin current in ferromagnet/non-magnet bilayers|Dong-Jun Kim,Chul-Yeon Jeon,Jong-Guk Choi,Jae Wook Lee,Srivathsava Surabhi,Jong-Ryul Jeong,Kyung-Jin Lee,Byong-Guk Park###
(222043, 222043)
 Here, we report spin Nernsteffect-induced transverse magnetoresistance in ferromagnet (FM)/non-magneticheavy metal (HM) bilayers.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Observation of transverse spin Nernst magnetoresistance induced by thermal spin current in ferromagnet/non-magnet bilayers|Dong-Jun Kim,Chul-Yeon Jeon,Jong-Guk Choi,Jae Wook Lee,Srivathsava Surabhi,Jong-Ryul Jeong,Kyung-Jin Lee,Byong-Guk Park###
(222083, 222083)
, planar Nernst signal) in FM<missing VAR>/HM<missing VAR> bilayers issignificantly modified by HM<missing VAR> and its thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Observation of transverse spin Nernst magnetoresistance induced by thermal spin current in ferromagnet/non-magnet bilayers|Dong-Jun Kim,Chul-Yeon Jeon,Jong-Guk Choi,Jae Wook Lee,Srivathsava Surabhi,Jong-Ryul Jeong,Kyung-Jin Lee,Byong-Guk Park###
(222086, 222086)
, planar Nernst signal) in FM<missing VAR>/HM<missing VAR> bilayers issignificantly modified by HM<missing VAR> and its thickness.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Observation of transverse spin Nernst magnetoresistance induced by thermal spin current in ferromagnet/non-magnet bilayers|Dong-Jun Kim,Chul-Yeon Jeon,Jong-Guk Choi,Jae Wook Lee,Srivathsava Surabhi,Jong-Ryul Jeong,Kyung-Jin Lee,Byong-Guk Park###
(222100, 222100)
, planar Nernst signal) in FM<missing VAR>/HM<missing VAR> bilayers issignificantly modified by HM<missing VAR> and its thickness.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Observation of transverse spin Nernst magnetoresistance induced by thermal spin current in ferromagnet/non-magnet bilayers|Dong-Jun Kim,Chul-Yeon Jeon,Jong-Guk Choi,Jae Wook Lee,Srivathsava Surabhi,Jong-Ryul Jeong,Kyung-Jin Lee,Byong-Guk Park###
(222125, 222125)
 This strong dependence oftransverse magnetoresistance on HM<missing VAR> evidences the spin Nernst effect in HM<missing VAR>; thegeneration of thermally-induced spin current in HM<missing VAR> and its subsequentreflection at the FM<missing VAR>/HM<missing VAR> interface.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Observation of transverse spin Nernst magnetoresistance induced by thermal spin current in ferromagnet/non-magnet bilayers|Dong-Jun Kim,Chul-Yeon Jeon,Jong-Guk Choi,Jae Wook Lee,Srivathsava Surabhi,Jong-Ryul Jeong,Kyung-Jin Lee,Byong-Guk Park###
(222140, 222140)
 This strong dependence oftransverse magnetoresistance on HM<missing VAR> evidences the spin Nernst effect in HM<missing VAR>; thegeneration of thermally-induced spin current in HM<missing VAR> and its subsequentreflection at the FM<missing VAR>/HM<missing VAR> interface.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Observation of transverse spin Nernst magnetoresistance induced by thermal spin current in ferromagnet/non-magnet bilayers|Dong-Jun Kim,Chul-Yeon Jeon,Jong-Guk Choi,Jae Wook Lee,Srivathsava Surabhi,Jong-Ryul Jeong,Kyung-Jin Lee,Byong-Guk Park###
(222161, 222161)
 This strong dependence oftransverse magnetoresistance on HM<missing VAR> evidences the spin Nernst effect in HM<missing VAR>; thegeneration of thermally-induced spin current in HM<missing VAR> and its subsequentreflection at the FM<missing VAR>/HM<missing VAR> interface.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Observation of transverse spin Nernst magnetoresistance induced by thermal spin current in ferromagnet/non-magnet bilayers|Dong-Jun Kim,Chul-Yeon Jeon,Jong-Guk Choi,Jae Wook Lee,Srivathsava Surabhi,Jong-Ryul Jeong,Kyung-Jin Lee,Byong-Guk Park###
(222177, 222177)
 This strong dependence oftransverse magnetoresistance on HM<missing VAR> evidences the spin Nernst effect in HM<missing VAR>; thegeneration of thermally-induced spin current in HM<missing VAR> and its subsequentreflection at the FM<missing VAR>/HM<missing VAR> interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Observation of transverse spin Nernst magnetoresistance induced by thermal spin current in ferromagnet/non-magnet bilayers|Dong-Jun Kim,Chul-Yeon Jeon,Jong-Guk Choi,Jae Wook Lee,Srivathsava Surabhi,Jong-Ryul Jeong,Kyung-Jin Lee,Byong-Guk Park###
(222180, 222180)
 This strong dependence oftransverse magnetoresistance on HM<missing VAR> evidences the spin Nernst effect in HM<missing VAR>; thegeneration of thermally-induced spin current in HM<missing VAR> and its subsequentreflection at the FM<missing VAR>/HM<missing VAR> interface.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Observation of transverse spin Nernst magnetoresistance induced by thermal spin current in ferromagnet/non-magnet bilayers|Dong-Jun Kim,Chul-Yeon Jeon,Jong-Guk Choi,Jae Wook Lee,Srivathsava Surabhi,Jong-Ryul Jeong,Kyung-Jin Lee,Byong-Guk Park###
(222211, 222211)
 Our analysis of transverse magnetoresistanceshows that the spin Nernst angles of W and Pt have the opposite sign to theirspin Hall angles.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Observation of transverse spin Nernst magnetoresistance induced by thermal spin current in ferromagnet/non-magnet bilayers|Dong-Jun Kim,Chul-Yeon Jeon,Jong-Guk Choi,Jae Wook Lee,Srivathsava Surabhi,Jong-Ryul Jeong,Kyung-Jin Lee,Byong-Guk Park###
(222215, 222215)
 Our analysis of transverse magnetoresistanceshows that the spin Nernst angles of W and Pt have the opposite sign to theirspin Hall angles.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Spin-Hall-Active Platinum Thin Films Grown Via Atomic Layer Deposition|Richard Schlitz,Akinwumi Abimbola Amusan,Michaela Lammel,Stefanie Schlicht,Tommi Tynell,Julien Bachmann,Georg Woltersdorf,Kornelius Nielsch,Sebastian T. B. Goennenwein,Andy Thomas###
(222357, 222357)
 We study the magnetoresistance of yttrium iron garnet/Pt heterostructures inwhich the Pt layer was grown via atomic layer deposition (ALD).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[176.0, 1.5, 'nm', 4],[237.0, 20, 'smaller', 4],[352.0, 3, 'D', 6]

Pt
###Spin-Hall-Active Platinum Thin Films Grown Via Atomic Layer Deposition|Richard Schlitz,Akinwumi Abimbola Amusan,Michaela Lammel,Stefanie Schlicht,Tommi Tynell,Julien Bachmann,Georg Woltersdorf,Kornelius Nielsch,Sebastian T. B. Goennenwein,Andy Thomas###
(222368, 222368)
 We study the magnetoresistance of yttrium iron garnet/Pt heterostructures inwhich the Pt layer was grown via atomic layer deposition (ALD).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 1.5, 'nm', 4],[226.0, 20, 'smaller', 4],[341.0, 3, 'D', 6]

Pt
###Spin-Hall-Active Platinum Thin Films Grown Via Atomic Layer Deposition|Richard Schlitz,Akinwumi Abimbola Amusan,Michaela Lammel,Stefanie Schlicht,Tommi Tynell,Julien Bachmann,Georg Woltersdorf,Kornelius Nielsch,Sebastian T. B. Goennenwein,Andy Thomas###
(222460, 222460)
 We estimate the spintransport parameters by comparing the magnitude of the magnetoresistance insamples with different Pt thicknesses.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 1.5, 'nm', 2],[134.0, 20, 'smaller', 2],[249.0, 3, 'D', 4]

Pt
###Spin-Hall-Active Platinum Thin Films Grown Via Atomic Layer Deposition|Richard Schlitz,Akinwumi Abimbola Amusan,Michaela Lammel,Stefanie Schlicht,Tommi Tynell,Julien Bachmann,Georg Woltersdorf,Kornelius Nielsch,Sebastian T. B. Goennenwein,Andy Thomas###
(222496, 222496)
 We compare the spin Hall angle and thespin diffusion length of the ALD Pt layers to the values reported forhigh-quality sputter-deposited Pt films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 1.5, 'nm', 1],[98.0, 20, 'smaller', 1],[213.0, 3, 'D', 3]

Pt
###Spin-Hall-Active Platinum Thin Films Grown Via Atomic Layer Deposition|Richard Schlitz,Akinwumi Abimbola Amusan,Michaela Lammel,Stefanie Schlicht,Tommi Tynell,Julien Bachmann,Georg Woltersdorf,Kornelius Nielsch,Sebastian T. B. Goennenwein,Andy Thomas###
(222519, 222519)
 We compare the spin Hall angle and thespin diffusion length of the ALD Pt layers to the values reported forhigh-quality sputter-deposited Pt films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 1.5, 'nm', 1],[75.0, 20, 'smaller', 1],[190.0, 3, 'D', 3]

Pt
###Spin-Hall-Active Platinum Thin Films Grown Via Atomic Layer Deposition|Richard Schlitz,Akinwumi Abimbola Amusan,Michaela Lammel,Stefanie Schlicht,Tommi Tynell,Julien Bachmann,Georg Woltersdorf,Kornelius Nielsch,Sebastian T. B. Goennenwein,Andy Thomas###
(222636, 222636)
 Our results demonstrate that ALD allows fabricating spin-Hall-active Ptfilms of suitable quality for use in spin transport structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 1.5, 'nm', 1],[42.0, 20, 'smaller', 1],[73.0, 3, 'D', 1]

Nd0.55-x
###Carrier localization and out of plane anisotropic magnetoresistance in $Nd_{0.55-x} Sm_x Sr_{0.45} Mn O_3$ thin films|M. K. Srivastava,A. Kaur,H. K. Singh###
(222749, 222752)
Carrier localization and out of plane anisotropic magnetoresistance in Nd0.55-x Smx<missing VAR> Sr0.45 Mn O3 thin films.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

Sm
###Carrier localization and out of plane anisotropic magnetoresistance in $Nd_{0.55-x} Sm_x Sr_{0.45} Mn O_3$ thin films|M. K. Srivastava,A. Kaur,H. K. Singh###
(222754, 222754)
Carrier localization and out of plane anisotropic magnetoresistance in Nd0.55-x Smx<missing VAR> Sr0.45 Mn O3 thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr0.45
###Carrier localization and out of plane anisotropic magnetoresistance in $Nd_{0.55-x} Sm_x Sr_{0.45} Mn O_3$ thin films|M. K. Srivastava,A. Kaur,H. K. Singh###
(222757, 222758)
Carrier localization and out of plane anisotropic magnetoresistance in Nd0.55-x Smx<missing VAR> Sr0.45 Mn O3 thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Carrier localization and out of plane anisotropic magnetoresistance in $Nd_{0.55-x} Sm_x Sr_{0.45} Mn O_3$ thin films|M. K. Srivastava,A. Kaur,H. K. Singh###
(222760, 222760)
Carrier localization and out of plane anisotropic magnetoresistance in Nd0.55-x Smx<missing VAR> Sr0.45 Mn O3 thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O3
###Carrier localization and out of plane anisotropic magnetoresistance in $Nd_{0.55-x} Sm_x Sr_{0.45} Mn O_3$ thin films|M. K. Srivastava,A. Kaur,H. K. Singh###
(222762, 222763)
Carrier localization and out of plane anisotropic magnetoresistance in Nd0.55-x Smx<missing VAR> Sr0.45 Mn O3 thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NSS
###Carrier localization and out of plane anisotropic magnetoresistance in $Nd_{0.55-x} Sm_x Sr_{0.45} Mn O_3$ thin films|M. K. Srivastava,A. Kaur,H. K. Singh###
(222803, 222805)
 The impact of carrier localization on the anisotropic magnetoresistance (AMR)has been investigated in NSSM<missing VAR>O thin films.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Carrier localization and out of plane anisotropic magnetoresistance in $Nd_{0.55-x} Sm_x Sr_{0.45} Mn O_3$ thin films|M. K. Srivastava,A. Kaur,H. K. Singh###
(222807, 222807)
 The impact of carrier localization on the anisotropic magnetoresistance (AMR)has been investigated in NSSM<missing VAR>O thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Temperature dependent nonlinear Hall effect in macroscopic Si-MOS antidot array|A. Yu. Kuntsevich,A. V. Shupltetsov,M. S. Nunuparov###
(222897, 222897)
Temperature dependent nonlinear Hall effect in macroscopic Si-M<missing VAR>OS antidot array.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OS
###Temperature dependent nonlinear Hall effect in macroscopic Si-MOS antidot array|A. Yu. Kuntsevich,A. V. Shupltetsov,M. S. Nunuparov###
(222900, 222901)
Temperature dependent nonlinear Hall effect in macroscopic Si-M<missing VAR>OS antidot array.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Temperature dependent nonlinear Hall effect in macroscopic Si-MOS antidot array|A. Yu. Kuntsevich,A. V. Shupltetsov,M. S. Nunuparov###
(222935, 222935)
 By measuring magnetoresistance and Hall effect in classically moderateperpendicular magnetic field in Si-M<missing VAR>OSFET-type macroscopic antidot array wefound a novel effect nonlinear with field, temperature- and density-dependentHall resistivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OSF
###Temperature dependent nonlinear Hall effect in macroscopic Si-MOS antidot array|A. Yu. Kuntsevich,A. V. Shupltetsov,M. S. Nunuparov###
(222938, 222940)
 By measuring magnetoresistance and Hall effect in classically moderateperpendicular magnetic field in Si-M<missing VAR>OSFET-type macroscopic antidot array wefound a novel effect nonlinear with field, temperature- and density-dependentHall resistivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaSb
###Temperature-field phase diagram of extreme magnetoresistance in lanthanum monopnictides|F. F. Tafti,Q. D. Gibson,S. K. Kushwaha,J. W. Krizan,N. Haldolaarachchige,R. J. Cava###
(223087, 223088)
 The recent discovery of extreme magnetoresistance in LaSb introducedlanthanum monopnictides as a new platform to study topological semimetals(T<missing VAR>SMs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Temperature-field phase diagram of extreme magnetoresistance in lanthanum monopnictides|F. F. Tafti,Q. D. Gibson,S. K. Kushwaha,J. W. Krizan,N. Haldolaarachchige,R. J. Cava###
(223116, 223116)
 The recent discovery of extreme magnetoresistance in LaSb introducedlanthanum monopnictides as a new platform to study topological semimetals(T<missing VAR>SMs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Temperature-field phase diagram of extreme magnetoresistance in lanthanum monopnictides|F. F. Tafti,Q. D. Gibson,S. K. Kushwaha,J. W. Krizan,N. Haldolaarachchige,R. J. Cava###
(223121, 223121)
 In this work we report the discovery of extreme magnetoresistance inLaBi, confirming lanthanum monopnictides as a promising family of T<missing VAR>SMs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaBi
###Temperature-field phase diagram of extreme magnetoresistance in lanthanum monopnictides|F. F. Tafti,Q. D. Gibson,S. K. Kushwaha,J. W. Krizan,N. Haldolaarachchige,R. J. Cava###
(223144, 223145)
 In this work we report the discovery of extreme magnetoresistance inLaBi, confirming lanthanum monopnictides as a promising family of T<missing VAR>SMs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Temperature-field phase diagram of extreme magnetoresistance in lanthanum monopnictides|F. F. Tafti,Q. D. Gibson,S. K. Kushwaha,J. W. Krizan,N. Haldolaarachchige,R. J. Cava###
(223165, 223165)
 In this work we report the discovery of extreme magnetoresistance inLaBi, confirming lanthanum monopnictides as a promising family of T<missing VAR>SMs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaBi
###Temperature-field phase diagram of extreme magnetoresistance in lanthanum monopnictides|F. F. Tafti,Q. D. Gibson,S. K. Kushwaha,J. W. Krizan,N. Haldolaarachchige,R. J. Cava###
(223231, 223232)
 Through a comparative studyof magnetotransport effects in LaBi and LaSb, we construct a triangulartemperature-field phase diagram that illustrates how a magnetic field tunes theelectronic behavior in these materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaSb
###Temperature-field phase diagram of extreme magnetoresistance in lanthanum monopnictides|F. F. Tafti,Q. D. Gibson,S. K. Kushwaha,J. W. Krizan,N. Haldolaarachchige,R. J. Cava###
(223236, 223237)
 Through a comparative studyof magnetotransport effects in LaBi and LaSb, we construct a triangulartemperature-field phase diagram that illustrates how a magnetic field tunes theelectronic behavior in these materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaBi
###Temperature-field phase diagram of extreme magnetoresistance in lanthanum monopnictides|F. F. Tafti,Q. D. Gibson,S. K. Kushwaha,J. W. Krizan,N. Haldolaarachchige,R. J. Cava###
(223365, 223366)
 By comparing ourexperimental results to band structure calculations, we suggest that extrememagnetoresistance in LaBi and LaSb originates from a particular orbital textureon their qasi-2D<missing VAR> Fermi surfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaSb
###Temperature-field phase diagram of extreme magnetoresistance in lanthanum monopnictides|F. F. Tafti,Q. D. Gibson,S. K. Kushwaha,J. W. Krizan,N. Haldolaarachchige,R. J. Cava###
(223370, 223371)
 By comparing ourexperimental results to band structure calculations, we suggest that extrememagnetoresistance in LaBi and LaSb originates from a particular orbital textureon their qasi-2D<missing VAR> Fermi surfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###EDEPR of impurity centers embedded in silicon microcavities|N. T. Bagraev,W. Gehlhoff,D. S. Gets,L. E. Klyachkin,A. A. Kudryavtsev,A. M. Malyarenko,V. A. Mashkov,V. V. Romanov###
(223621, 223621)
EDEPR<missing VAR> of impurity centers embedded in silicon microcavities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###EDEPR of impurity centers embedded in silicon microcavities|N. T. Bagraev,W. Gehlhoff,D. S. Gets,L. E. Klyachkin,A. A. Kudryavtsev,A. M. Malyarenko,V. A. Mashkov,V. V. Romanov###
(223667, 223667)
 We present the first findings of the new electrically-detected EPR (EDEPR)technique which reveal different shallow and deep centers without using theexternal cavity as well as the hf source and recorder, with measuring the onlymagnetoresistance of the Si-Q<missing VAR>W confined by the superconductor delta-barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###EDEPR of impurity centers embedded in silicon microcavities|N. T. Bagraev,W. Gehlhoff,D. S. Gets,L. E. Klyachkin,A. A. Kudryavtsev,A. M. Malyarenko,V. A. Mashkov,V. V. Romanov###
(223731, 223731)
 We present the first findings of the new electrically-detected EPR (EDEPR)technique which reveal different shallow and deep centers without using theexternal cavity as well as the hf source and recorder, with measuring the onlymagnetoresistance of the Si-Q<missing VAR>W confined by the superconductor delta-barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###EDEPR of impurity centers embedded in silicon microcavities|N. T. Bagraev,W. Gehlhoff,D. S. Gets,L. E. Klyachkin,A. A. Kudryavtsev,A. M. Malyarenko,V. A. Mashkov,V. V. Romanov###
(223734, 223734)
 We present the first findings of the new electrically-detected EPR (EDEPR)technique which reveal different shallow and deep centers without using theexternal cavity as well as the hf source and recorder, with measuring the onlymagnetoresistance of the Si-Q<missing VAR>W confined by the superconductor delta-barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Rippled Graphene in an In-Plane Magnetic Field: Effects of a Random Vector Potential|Mark B. Lundeberg,Joshua A. Folk###
(223765, 223765)
Rippled Graphene in an In-Plane Magnetic Field Effects of a Random Vector Potential.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Hysteretic phenomena in a 2DEG in quantum Hall effect regime studied in a transport experiment|M. V. Budantsev,D. A. Pokhabov,A. G. Pogosov,E. Yu. Zhdanov,A. K. Bakarov,A. I. Toropov###
(224414, 224414)
 This points to the edge nature of thenon-equilibrium currents (NE<missing VAR>Cs) and allows us to determine the width of theNE<missing VAR>Cs area (sim0.5 mum).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[478.0, 2, 'DEG', 8],[390.0, 2, 'DEG', 7],[269.0, 2, 'DEG', 4]

Cs
###Hysteretic phenomena in a 2DEG in quantum Hall effect regime studied in a transport experiment|M. V. Budantsev,D. A. Pokhabov,A. G. Pogosov,E. Yu. Zhdanov,A. K. Bakarov,A. I. Toropov###
(224416, 224416)
 This points to the edge nature of thenon-equilibrium currents (NE<missing VAR>Cs) and allows us to determine the width of theNE<missing VAR>Cs area (sim0.5 mum).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[480.0, 2, 'DEG', 8],[392.0, 2, 'DEG', 7],[271.0, 2, 'DEG', 4]

N
###Hysteretic phenomena in a 2DEG in quantum Hall effect regime studied in a transport experiment|M. V. Budantsev,D. A. Pokhabov,A. G. Pogosov,E. Yu. Zhdanov,A. K. Bakarov,A. I. Toropov###
(224438, 224438)
 This points to the edge nature of thenon-equilibrium currents (NE<missing VAR>Cs) and allows us to determine the width of theNE<missing VAR>Cs area (sim0.5 mum).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[502.0, 2, 'DEG', 8],[414.0, 2, 'DEG', 7],[293.0, 2, 'DEG', 4]

Cs
###Hysteretic phenomena in a 2DEG in quantum Hall effect regime studied in a transport experiment|M. V. Budantsev,D. A. Pokhabov,A. G. Pogosov,E. Yu. Zhdanov,A. K. Bakarov,A. I. Toropov###
(224440, 224440)
 This points to the edge nature of thenon-equilibrium currents (NE<missing VAR>Cs) and allows us to determine the width of theNE<missing VAR>Cs area (sim0.5 mum).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[504.0, 2, 'DEG', 8],[416.0, 2, 'DEG', 7],[295.0, 2, 'DEG', 4]

In
###Magnetoresistance peculiarities and magnetization of materials with two kinds of superconducting inclusions|Oksana N. Shevtsova###
(224595, 224595)
 In the approximation that thesize of inclusions is much smaller than the coherence length/penetration depthof the magnetic field the theory for magnetoresistance of a crystal containingspherical superconducting inclusions of two different materials has beendeveloped, and magnetization of crystals has been calculated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt/CoFe2O4
###Absence of magnetic proximity effects in magnetoresistive Pt/CoFe2O4 hybrid interfaces|M. Valvidares,N. Dix,M. Isasa,K. Ollefs,F. Wilhelm,A. Rogalev,F. Sánchez,E. Pellegrin,A. Bedoya-Pinto,P. Gargiani,L. E. Hueso,F. Casanova,J. Fontcuberta###
(224715, 224721)
Absence of magnetic proximity effects in magnetoresistive Pt/CoFe2O4 hybrid interfaces.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[93.0, 2, ',', 2],[336.0, 2, ',', 6]

Pt
###Absence of magnetic proximity effects in magnetoresistive Pt/CoFe2O4 hybrid interfaces|M. Valvidares,N. Dix,M. Isasa,K. Ollefs,F. Wilhelm,A. Rogalev,F. Sánchez,E. Pellegrin,A. Bedoya-Pinto,P. Gargiani,L. E. Hueso,F. Casanova,J. Fontcuberta###
(224732, 224732)
 Ultra-thin Pt films grown on insulating ferrimagnetic CoFe2O4 (111) epitaxialfilms display a magnetoresistance upon rotating the magnetization of themagnetic layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 2, ',', 1],[325.0, 2, ',', 5]

CoFe2O4
###Absence of magnetic proximity effects in magnetoresistive Pt/CoFe2O4 hybrid interfaces|M. Valvidares,N. Dix,M. Isasa,K. Ollefs,F. Wilhelm,A. Rogalev,F. Sánchez,E. Pellegrin,A. Bedoya-Pinto,P. Gargiani,L. E. Hueso,F. Casanova,J. Fontcuberta###
(224744, 224748)
 Ultra-thin Pt films grown on insulating ferrimagnetic CoFe2O4 (111) epitaxialfilms display a magnetoresistance upon rotating the magnetization of themagnetic layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 2, ',', 1],[309.0, 2, ',', 5]

C
###Absence of magnetic proximity effects in magnetoresistive Pt/CoFe2O4 hybrid interfaces|M. Valvidares,N. Dix,M. Isasa,K. Ollefs,F. Wilhelm,A. Rogalev,F. Sánchez,E. Pellegrin,A. Bedoya-Pinto,P. Gargiani,L. E. Hueso,F. Casanova,J. Fontcuberta###
(224802, 224802)
 We report here X<missing VAR>-ray magnetic circular dichroism (XMCD)recorded at Pt-L<missing VAR>2,3 and Pt-M<missing VAR>3 edges.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 2, ',', 0],[255.0, 2, ',', 4]

Pt
###Absence of magnetic proximity effects in magnetoresistive Pt/CoFe2O4 hybrid interfaces|M. Valvidares,N. Dix,M. Isasa,K. Ollefs,F. Wilhelm,A. Rogalev,F. Sánchez,E. Pellegrin,A. Bedoya-Pinto,P. Gargiani,L. E. Hueso,F. Casanova,J. Fontcuberta###
(224811, 224811)
 We report here X<missing VAR>-ray magnetic circular dichroism (XMCD)recorded at Pt-L<missing VAR>2,3 and Pt-M<missing VAR>3 edges.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 2, ',', 0],[246.0, 2, ',', 4]

Pt
###Absence of magnetic proximity effects in magnetoresistive Pt/CoFe2O4 hybrid interfaces|M. Valvidares,N. Dix,M. Isasa,K. Ollefs,F. Wilhelm,A. Rogalev,F. Sánchez,E. Pellegrin,A. Bedoya-Pinto,P. Gargiani,L. E. Hueso,F. Casanova,J. Fontcuberta###
(224820, 224820)
 We report here X<missing VAR>-ray magnetic circular dichroism (XMCD)recorded at Pt-L<missing VAR>2,3 and Pt-M<missing VAR>3 edges.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 2, ',', 0],[237.0, 2, ',', 4]

Pt
###Absence of magnetic proximity effects in magnetoresistive Pt/CoFe2O4 hybrid interfaces|M. Valvidares,N. Dix,M. Isasa,K. Ollefs,F. Wilhelm,A. Rogalev,F. Sánchez,E. Pellegrin,A. Bedoya-Pinto,P. Gargiani,L. E. Hueso,F. Casanova,J. Fontcuberta###
(224838, 224838)
 The results indicate that the Pt magneticmoment, if any, is below the detection limit (< 0.001 muB/Pt), thusstrongly favoring the view that the presence of CoFe2O4 does not induce theformation of magnetic moments in Pt.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 2, ',', 1],[219.0, 2, ',', 3]

Pt
###Absence of magnetic proximity effects in magnetoresistive Pt/CoFe2O4 hybrid interfaces|M. Valvidares,N. Dix,M. Isasa,K. Ollefs,F. Wilhelm,A. Rogalev,F. Sánchez,E. Pellegrin,A. Bedoya-Pinto,P. Gargiani,L. E. Hueso,F. Casanova,J. Fontcuberta###
(224869, 224869)
 The results indicate that the Pt magneticmoment, if any, is below the detection limit (< 0.001 muB/Pt), thusstrongly favoring the view that the presence of CoFe2O4 does not induce theformation of magnetic moments in Pt.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 2, ',', 1],[188.0, 2, ',', 3]

CoFe2O4
###Absence of magnetic proximity effects in magnetoresistive Pt/CoFe2O4 hybrid interfaces|M. Valvidares,N. Dix,M. Isasa,K. Ollefs,F. Wilhelm,A. Rogalev,F. Sánchez,E. Pellegrin,A. Bedoya-Pinto,P. Gargiani,L. E. Hueso,F. Casanova,J. Fontcuberta###
(224892, 224896)
 The results indicate that the Pt magneticmoment, if any, is below the detection limit (< 0.001 muB/Pt), thusstrongly favoring the view that the presence of CoFe2O4 does not induce theformation of magnetic moments in Pt.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 2, ',', 1],[161.0, 2, ',', 3]

Pt
###Absence of magnetic proximity effects in magnetoresistive Pt/CoFe2O4 hybrid interfaces|M. Valvidares,N. Dix,M. Isasa,K. Ollefs,F. Wilhelm,A. Rogalev,F. Sánchez,E. Pellegrin,A. Bedoya-Pinto,P. Gargiani,L. E. Hueso,F. Casanova,J. Fontcuberta###
(224917, 224917)
 The results indicate that the Pt magneticmoment, if any, is below the detection limit (< 0.001 muB/Pt), thusstrongly favoring the view that the presence of CoFe2O4 does not induce theformation of magnetic moments in Pt.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 2, ',', 1],[140.0, 2, ',', 3]

Pt
###Absence of magnetic proximity effects in magnetoresistive Pt/CoFe2O4 hybrid interfaces|M. Valvidares,N. Dix,M. Isasa,K. Ollefs,F. Wilhelm,A. Rogalev,F. Sánchez,E. Pellegrin,A. Bedoya-Pinto,P. Gargiani,L. E. Hueso,F. Casanova,J. Fontcuberta###
(224954, 224954)
 Therefore, the observed magnetoresistancecannot be attributed to some sort of proximity-induced magnetic moments at Ptions and subsequent magnetic-field dependent scattering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 2, ',', 2],[103.0, 2, ',', 2]

C
###Absence of magnetic proximity effects in magnetoresistive Pt/CoFe2O4 hybrid interfaces|M. Valvidares,N. Dix,M. Isasa,K. Ollefs,F. Wilhelm,A. Rogalev,F. Sánchez,E. Pellegrin,A. Bedoya-Pinto,P. Gargiani,L. E. Hueso,F. Casanova,J. Fontcuberta###
(225043, 225043)
Furthermore, comparison of bulk magnetization and XMCD<missing VAR> data at (Fe,Co)-L<missing VAR>2,3edges suggests the presence of some spin disorder in the CoFe2O4 layer whichmay be relevant for the observed anomalous non-saturating field-dependence ofspin Hall magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[229.0, 2, ',', 4],[14.0, 2, ',', 0]

Fe
###Absence of magnetic proximity effects in magnetoresistive Pt/CoFe2O4 hybrid interfaces|M. Valvidares,N. Dix,M. Isasa,K. Ollefs,F. Wilhelm,A. Rogalev,F. Sánchez,E. Pellegrin,A. Bedoya-Pinto,P. Gargiani,L. E. Hueso,F. Casanova,J. Fontcuberta###
(225051, 225051)
Furthermore, comparison of bulk magnetization and XMCD<missing VAR> data at (Fe,Co)-L<missing VAR>2,3edges suggests the presence of some spin disorder in the CoFe2O4 layer whichmay be relevant for the observed anomalous non-saturating field-dependence ofspin Hall magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[237.0, 2, ',', 4],[6.0, 2, ',', 0]

Co
###Absence of magnetic proximity effects in magnetoresistive Pt/CoFe2O4 hybrid interfaces|M. Valvidares,N. Dix,M. Isasa,K. Ollefs,F. Wilhelm,A. Rogalev,F. Sánchez,E. Pellegrin,A. Bedoya-Pinto,P. Gargiani,L. E. Hueso,F. Casanova,J. Fontcuberta###
(225053, 225053)
Furthermore, comparison of bulk magnetization and XMCD<missing VAR> data at (Fe,Co)-L<missing VAR>2,3edges suggests the presence of some spin disorder in the CoFe2O4 layer whichmay be relevant for the observed anomalous non-saturating field-dependence ofspin Hall magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[239.0, 2, ',', 4],[4.0, 2, ',', 0]

CoFe2O4
###Absence of magnetic proximity effects in magnetoresistive Pt/CoFe2O4 hybrid interfaces|M. Valvidares,N. Dix,M. Isasa,K. Ollefs,F. Wilhelm,A. Rogalev,F. Sánchez,E. Pellegrin,A. Bedoya-Pinto,P. Gargiani,L. E. Hueso,F. Casanova,J. Fontcuberta###
(225082, 225086)
Furthermore, comparison of bulk magnetization and XMCD<missing VAR> data at (Fe,Co)-L<missing VAR>2,3edges suggests the presence of some spin disorder in the CoFe2O4 layer whichmay be relevant for the observed anomalous non-saturating field-dependence ofspin Hall magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[268.0, 2, ',', 4],[25.0, 2, ',', 0]

N
###Magnetoresistance of heavy and light metal/ferromagnet bilayers|Can Onur Avci,Kevin Garello,Johannes Mendil,Abhijit Ghosh,Nicolas Blasakis,Mihai Gabureac,Morgan Trassin,Manfred Fiebig,Pietro Gambardella###
(225314, 225314)
 We studied the magnetoresistance of normal metal (NM)/ferromagnet (FM)bilayers in the linear and nonlinear (current-dependent) regimes and comparedit with the amplitude of the spin-orbit torques and thermally induced electricfields.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 0.5, '%', 1],[326.0, 0.005, '%', 4]

F
###Magnetoresistance of heavy and light metal/ferromagnet bilayers|Can Onur Avci,Kevin Garello,Johannes Mendil,Abhijit Ghosh,Nicolas Blasakis,Mihai Gabureac,Morgan Trassin,Manfred Fiebig,Pietro Gambardella###
(225321, 225321)
 We studied the magnetoresistance of normal metal (NM)/ferromagnet (FM)bilayers in the linear and nonlinear (current-dependent) regimes and comparedit with the amplitude of the spin-orbit torques and thermally induced electricfields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 0.5, '%', 1],[319.0, 0.005, '%', 4]

N
###Magnetoresistance of heavy and light metal/ferromagnet bilayers|Can Onur Avci,Kevin Garello,Johannes Mendil,Abhijit Ghosh,Nicolas Blasakis,Mihai Gabureac,Morgan Trassin,Manfred Fiebig,Pietro Gambardella###
(225399, 225399)
 Our experiments reveal that the magnetoresistance of the heavy NM<missing VAR>/Cobilayers (NM<missing VAR>  Ta, W, Pt) is phenomenologically similar to the spin Hallmagnetoresistance (SMR) of YIG<missing VAR>/Pt, but has a much larger anisotropy, of theorder of 0.5%, which increases with the atomic number of the NM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 0.5, '%', 0],[241.0, 0.005, '%', 3]

Co
###Magnetoresistance of heavy and light metal/ferromagnet bilayers|Can Onur Avci,Kevin Garello,Johannes Mendil,Abhijit Ghosh,Nicolas Blasakis,Mihai Gabureac,Morgan Trassin,Manfred Fiebig,Pietro Gambardella###
(225402, 225402)
 Our experiments reveal that the magnetoresistance of the heavy NM<missing VAR>/Cobilayers (NM<missing VAR>  Ta, W, Pt) is phenomenologically similar to the spin Hallmagnetoresistance (SMR) of YIG<missing VAR>/Pt, but has a much larger anisotropy, of theorder of 0.5%, which increases with the atomic number of the NM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 0.5, '%', 0],[238.0, 0.005, '%', 3]

N
###Magnetoresistance of heavy and light metal/ferromagnet bilayers|Can Onur Avci,Kevin Garello,Johannes Mendil,Abhijit Ghosh,Nicolas Blasakis,Mihai Gabureac,Morgan Trassin,Manfred Fiebig,Pietro Gambardella###
(225408, 225408)
 Our experiments reveal that the magnetoresistance of the heavy NM<missing VAR>/Cobilayers (NM<missing VAR>  Ta, W, Pt) is phenomenologically similar to the spin Hallmagnetoresistance (SMR) of YIG<missing VAR>/Pt, but has a much larger anisotropy, of theorder of 0.5%, which increases with the atomic number of the NM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 0.5, '%', 0],[232.0, 0.005, '%', 3]

Ta
###Magnetoresistance of heavy and light metal/ferromagnet bilayers|Can Onur Avci,Kevin Garello,Johannes Mendil,Abhijit Ghosh,Nicolas Blasakis,Mihai Gabureac,Morgan Trassin,Manfred Fiebig,Pietro Gambardella###
(225412, 225412)
 Our experiments reveal that the magnetoresistance of the heavy NM<missing VAR>/Cobilayers (NM<missing VAR>  Ta, W, Pt) is phenomenologically similar to the spin Hallmagnetoresistance (SMR) of YIG<missing VAR>/Pt, but has a much larger anisotropy, of theorder of 0.5%, which increases with the atomic number of the NM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 0.5, '%', 0],[228.0, 0.005, '%', 3]

W
###Magnetoresistance of heavy and light metal/ferromagnet bilayers|Can Onur Avci,Kevin Garello,Johannes Mendil,Abhijit Ghosh,Nicolas Blasakis,Mihai Gabureac,Morgan Trassin,Manfred Fiebig,Pietro Gambardella###
(225415, 225415)
 Our experiments reveal that the magnetoresistance of the heavy NM<missing VAR>/Cobilayers (NM<missing VAR>  Ta, W, Pt) is phenomenologically similar to the spin Hallmagnetoresistance (SMR) of YIG<missing VAR>/Pt, but has a much larger anisotropy, of theorder of 0.5%, which increases with the atomic number of the NM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 0.5, '%', 0],[225.0, 0.005, '%', 3]

Pt
###Magnetoresistance of heavy and light metal/ferromagnet bilayers|Can Onur Avci,Kevin Garello,Johannes Mendil,Abhijit Ghosh,Nicolas Blasakis,Mihai Gabureac,Morgan Trassin,Manfred Fiebig,Pietro Gambardella###
(225418, 225418)
 Our experiments reveal that the magnetoresistance of the heavy NM<missing VAR>/Cobilayers (NM<missing VAR>  Ta, W, Pt) is phenomenologically similar to the spin Hallmagnetoresistance (SMR) of YIG<missing VAR>/Pt, but has a much larger anisotropy, of theorder of 0.5%, which increases with the atomic number of the NM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 0.5, '%', 0],[222.0, 0.005, '%', 3]

S
###Magnetoresistance of heavy and light metal/ferromagnet bilayers|Can Onur Avci,Kevin Garello,Johannes Mendil,Abhijit Ghosh,Nicolas Blasakis,Mihai Gabureac,Morgan Trassin,Manfred Fiebig,Pietro Gambardella###
(225439, 225439)
 Our experiments reveal that the magnetoresistance of the heavy NM<missing VAR>/Cobilayers (NM<missing VAR>  Ta, W, Pt) is phenomenologically similar to the spin Hallmagnetoresistance (SMR) of YIG<missing VAR>/Pt, but has a much larger anisotropy, of theorder of 0.5%, which increases with the atomic number of the NM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 0.5, '%', 0],[201.0, 0.005, '%', 3]

YI
###Magnetoresistance of heavy and light metal/ferromagnet bilayers|Can Onur Avci,Kevin Garello,Johannes Mendil,Abhijit Ghosh,Nicolas Blasakis,Mihai Gabureac,Morgan Trassin,Manfred Fiebig,Pietro Gambardella###
(225446, 225447)
 Our experiments reveal that the magnetoresistance of the heavy NM<missing VAR>/Cobilayers (NM<missing VAR>  Ta, W, Pt) is phenomenologically similar to the spin Hallmagnetoresistance (SMR) of YIG<missing VAR>/Pt, but has a much larger anisotropy, of theorder of 0.5%, which increases with the atomic number of the NM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 0.5, '%', 0],[193.0, 0.005, '%', 3]

Pt
###Magnetoresistance of heavy and light metal/ferromagnet bilayers|Can Onur Avci,Kevin Garello,Johannes Mendil,Abhijit Ghosh,Nicolas Blasakis,Mihai Gabureac,Morgan Trassin,Manfred Fiebig,Pietro Gambardella###
(225450, 225450)
 Our experiments reveal that the magnetoresistance of the heavy NM<missing VAR>/Cobilayers (NM<missing VAR>  Ta, W, Pt) is phenomenologically similar to the spin Hallmagnetoresistance (SMR) of YIG<missing VAR>/Pt, but has a much larger anisotropy, of theorder of 0.5%, which increases with the atomic number of the NM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 0.5, '%', 0],[190.0, 0.005, '%', 3]

N
###Magnetoresistance of heavy and light metal/ferromagnet bilayers|Can Onur Avci,Kevin Garello,Johannes Mendil,Abhijit Ghosh,Nicolas Blasakis,Mihai Gabureac,Morgan Trassin,Manfred Fiebig,Pietro Gambardella###
(225495, 225495)
 Our experiments reveal that the magnetoresistance of the heavy NM<missing VAR>/Cobilayers (NM<missing VAR>  Ta, W, Pt) is phenomenologically similar to the spin Hallmagnetoresistance (SMR) of YIG<missing VAR>/Pt, but has a much larger anisotropy, of theorder of 0.5%, which increases with the atomic number of the NM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 0.5, '%', 0],[145.0, 0.005, '%', 3]

S
###Magnetoresistance of heavy and light metal/ferromagnet bilayers|Can Onur Avci,Kevin Garello,Johannes Mendil,Abhijit Ghosh,Nicolas Blasakis,Mihai Gabureac,Morgan Trassin,Manfred Fiebig,Pietro Gambardella###
(225501, 225501)
 This SMR-likebehavior is absent in light NM<missing VAR>/Co bilayers (NM<missing VAR>  Ti, Cu), which present thestandard AMR expected of polycrystalline FM<missing VAR> layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 0.5, '%', 1],[139.0, 0.005, '%', 2]

N
###Magnetoresistance of heavy and light metal/ferromagnet bilayers|Can Onur Avci,Kevin Garello,Johannes Mendil,Abhijit Ghosh,Nicolas Blasakis,Mihai Gabureac,Morgan Trassin,Manfred Fiebig,Pietro Gambardella###
(225518, 225518)
 This SMR-likebehavior is absent in light NM<missing VAR>/Co bilayers (NM<missing VAR>  Ti, Cu), which present thestandard AMR expected of polycrystalline FM<missing VAR> layers.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 0.5, '%', 1],[122.0, 0.005, '%', 2]

Co
###Magnetoresistance of heavy and light metal/ferromagnet bilayers|Can Onur Avci,Kevin Garello,Johannes Mendil,Abhijit Ghosh,Nicolas Blasakis,Mihai Gabureac,Morgan Trassin,Manfred Fiebig,Pietro Gambardella###
(225521, 225521)
 This SMR-likebehavior is absent in light NM<missing VAR>/Co bilayers (NM<missing VAR>  Ti, Cu), which present thestandard AMR expected of polycrystalline FM<missing VAR> layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 0.5, '%', 1],[119.0, 0.005, '%', 2]

N
###Magnetoresistance of heavy and light metal/ferromagnet bilayers|Can Onur Avci,Kevin Garello,Johannes Mendil,Abhijit Ghosh,Nicolas Blasakis,Mihai Gabureac,Morgan Trassin,Manfred Fiebig,Pietro Gambardella###
(225526, 225526)
 This SMR-likebehavior is absent in light NM<missing VAR>/Co bilayers (NM<missing VAR>  Ti, Cu), which present thestandard AMR expected of polycrystalline FM<missing VAR> layers.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 0.5, '%', 1],[114.0, 0.005, '%', 2]

Ti
###Magnetoresistance of heavy and light metal/ferromagnet bilayers|Can Onur Avci,Kevin Garello,Johannes Mendil,Abhijit Ghosh,Nicolas Blasakis,Mihai Gabureac,Morgan Trassin,Manfred Fiebig,Pietro Gambardella###
(225530, 225530)
 This SMR-likebehavior is absent in light NM<missing VAR>/Co bilayers (NM<missing VAR>  Ti, Cu), which present thestandard AMR expected of polycrystalline FM<missing VAR> layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 0.5, '%', 1],[110.0, 0.005, '%', 2]

Cu
###Magnetoresistance of heavy and light metal/ferromagnet bilayers|Can Onur Avci,Kevin Garello,Johannes Mendil,Abhijit Ghosh,Nicolas Blasakis,Mihai Gabureac,Morgan Trassin,Manfred Fiebig,Pietro Gambardella###
(225533, 225533)
 This SMR-likebehavior is absent in light NM<missing VAR>/Co bilayers (NM<missing VAR>  Ti, Cu), which present thestandard AMR expected of polycrystalline FM<missing VAR> layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 0.5, '%', 1],[107.0, 0.005, '%', 2]

F
###Magnetoresistance of heavy and light metal/ferromagnet bilayers|Can Onur Avci,Kevin Garello,Johannes Mendil,Abhijit Ghosh,Nicolas Blasakis,Mihai Gabureac,Morgan Trassin,Manfred Fiebig,Pietro Gambardella###
(225556, 225556)
 This SMR-likebehavior is absent in light NM<missing VAR>/Co bilayers (NM<missing VAR>  Ti, Cu), which present thestandard AMR expected of polycrystalline FM<missing VAR> layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 0.5, '%', 1],[84.0, 0.005, '%', 2]

In
###Magnetoresistance of heavy and light metal/ferromagnet bilayers|Can Onur Avci,Kevin Garello,Johannes Mendil,Abhijit Ghosh,Nicolas Blasakis,Mihai Gabureac,Morgan Trassin,Manfred Fiebig,Pietro Gambardella###
(225562, 225562)
 In the Ta, W, Pt/Cobilayers we find an additional magnetoresistance, directly proportional to thecurrent and to the transverse component of the magnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 0.5, '%', 2],[78.0, 0.005, '%', 1]

Ta
###Magnetoresistance of heavy and light metal/ferromagnet bilayers|Can Onur Avci,Kevin Garello,Johannes Mendil,Abhijit Ghosh,Nicolas Blasakis,Mihai Gabureac,Morgan Trassin,Manfred Fiebig,Pietro Gambardella###
(225566, 225566)
 In the Ta, W, Pt/Cobilayers we find an additional magnetoresistance, directly proportional to thecurrent and to the transverse component of the magnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 0.5, '%', 2],[74.0, 0.005, '%', 1]

W
###Magnetoresistance of heavy and light metal/ferromagnet bilayers|Can Onur Avci,Kevin Garello,Johannes Mendil,Abhijit Ghosh,Nicolas Blasakis,Mihai Gabureac,Morgan Trassin,Manfred Fiebig,Pietro Gambardella###
(225569, 225569)
 In the Ta, W, Pt/Cobilayers we find an additional magnetoresistance, directly proportional to thecurrent and to the transverse component of the magnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 0.5, '%', 2],[71.0, 0.005, '%', 1]

Pt/Co
###Magnetoresistance of heavy and light metal/ferromagnet bilayers|Can Onur Avci,Kevin Garello,Johannes Mendil,Abhijit Ghosh,Nicolas Blasakis,Mihai Gabureac,Morgan Trassin,Manfred Fiebig,Pietro Gambardella###
(225572, 225574)
 In the Ta, W, Pt/Cobilayers we find an additional magnetoresistance, directly proportional to thecurrent and to the transverse component of the magnetization.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[97.0, 0.5, '%', 2],[66.0, 0.005, '%', 1]

S
###Magnetoresistance of heavy and light metal/ferromagnet bilayers|Can Onur Avci,Kevin Garello,Johannes Mendil,Abhijit Ghosh,Nicolas Blasakis,Mihai Gabureac,Morgan Trassin,Manfred Fiebig,Pietro Gambardella###
(225627, 225627)
 This so-calledunidirectional SMR, of the order of 0.005%, is largest in W and correlates withthe amplitude of the antidamping spin-orbit torque.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 0.5, '%', 3],[13.0, 0.005, '%', 0]

W
###Magnetoresistance of heavy and light metal/ferromagnet bilayers|Can Onur Avci,Kevin Garello,Johannes Mendil,Abhijit Ghosh,Nicolas Blasakis,Mihai Gabureac,Morgan Trassin,Manfred Fiebig,Pietro Gambardella###
(225650, 225650)
 This so-calledunidirectional SMR, of the order of 0.005%, is largest in W and correlates withthe amplitude of the antidamping spin-orbit torque.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 0.5, '%', 3],[10.0, 0.005, '%', 0]

S
###Magnetoresistance of heavy and light metal/ferromagnet bilayers|Can Onur Avci,Kevin Garello,Johannes Mendil,Abhijit Ghosh,Nicolas Blasakis,Mihai Gabureac,Morgan Trassin,Manfred Fiebig,Pietro Gambardella###
(225680, 225680)
 The unidirectional SMR isbelow the accuracy of our measurements in YIG<missing VAR>/Pt.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, 0.5, '%', 4],[40.0, 0.005, '%', 1]

YI
###Magnetoresistance of heavy and light metal/ferromagnet bilayers|Can Onur Avci,Kevin Garello,Johannes Mendil,Abhijit Ghosh,Nicolas Blasakis,Mihai Gabureac,Morgan Trassin,Manfred Fiebig,Pietro Gambardella###
(225701, 225702)
 The unidirectional SMR isbelow the accuracy of our measurements in YIG<missing VAR>/Pt.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[226.0, 0.5, '%', 4],[61.0, 0.005, '%', 1]

Pt
###Magnetoresistance of heavy and light metal/ferromagnet bilayers|Can Onur Avci,Kevin Garello,Johannes Mendil,Abhijit Ghosh,Nicolas Blasakis,Mihai Gabureac,Morgan Trassin,Manfred Fiebig,Pietro Gambardella###
(225705, 225705)
 The unidirectional SMR isbelow the accuracy of our measurements in YIG<missing VAR>/Pt.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[230.0, 0.5, '%', 4],[65.0, 0.005, '%', 1]

PdSn4
###Extremely large magnetoresistance and Kohler's rule in PdSn4: a complete study of thermodynamic, transport and band structure properties|Na Hyun Jo,Yun Wu,Lin-Lin Wang,Peter P. Orth,Savannah S. Downing,Soham Manni,Dixiang Mou,Duane D. Johnson,Adam Kaminski,Sergey L. Bud'ko,Paul C. Canfield###
(225895, 225897)
Extremely large magnetoresistance and Kohlers<missing VAR> rule in PdSn4 a complete study of thermodynamic, transport and band structure properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PtSn4
###Extremely large magnetoresistance and Kohler's rule in PdSn4: a complete study of thermodynamic, transport and band structure properties|Na Hyun Jo,Yun Wu,Lin-Lin Wang,Peter P. Orth,Savannah S. Downing,Soham Manni,Dixiang Mou,Duane D. Johnson,Adam Kaminski,Sergey L. Bud'ko,Paul C. Canfield###
(225929, 225931)
 The recently discovered material PtSn4 is known to exhibit extremely largemagnetoresistance (XMR) that also manifests Dirac arc nodes on the surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PdSn4
###Extremely large magnetoresistance and Kohler's rule in PdSn4: a complete study of thermodynamic, transport and band structure properties|Na Hyun Jo,Yun Wu,Lin-Lin Wang,Peter P. Orth,Savannah S. Downing,Soham Manni,Dixiang Mou,Duane D. Johnson,Adam Kaminski,Sergey L. Bud'ko,Paul C. Canfield###
(225974, 225976)
PdSn4 is isostructure to PtSn4 with same electron count.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PtSn4
###Extremely large magnetoresistance and Kohler's rule in PdSn4: a complete study of thermodynamic, transport and band structure properties|Na Hyun Jo,Yun Wu,Lin-Lin Wang,Peter P. Orth,Savannah S. Downing,Soham Manni,Dixiang Mou,Duane D. Johnson,Adam Kaminski,Sergey L. Bud'ko,Paul C. Canfield###
(225984, 225986)
PdSn4 is isostructure to PtSn4 with same electron count.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PdSn4
###Extremely large magnetoresistance and Kohler's rule in PdSn4: a complete study of thermodynamic, transport and band structure properties|Na Hyun Jo,Yun Wu,Lin-Lin Wang,Peter P. Orth,Savannah S. Downing,Soham Manni,Dixiang Mou,Duane D. Johnson,Adam Kaminski,Sergey L. Bud'ko,Paul C. Canfield###
(226022, 226024)
 We report on thephysical properties of high quality single crystals of PdSn4 includingspecific heat, temperature and magnetic field dependent resistivity andmagnetization, and electronic band structure properties obtained from angleresolved photoemission spectroscopy (ARPES).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Extremely large magnetoresistance and Kohler's rule in PdSn4: a complete study of thermodynamic, transport and band structure properties|Na Hyun Jo,Yun Wu,Lin-Lin Wang,Peter P. Orth,Savannah S. Downing,Soham Manni,Dixiang Mou,Duane D. Johnson,Adam Kaminski,Sergey L. Bud'ko,Paul C. Canfield###
(226080, 226080)
 We report on thephysical properties of high quality single crystals of PdSn4 includingspecific heat, temperature and magnetic field dependent resistivity andmagnetization, and electronic band structure properties obtained from angleresolved photoemission spectroscopy (ARPES).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PdSn4
###Extremely large magnetoresistance and Kohler's rule in PdSn4: a complete study of thermodynamic, transport and band structure properties|Na Hyun Jo,Yun Wu,Lin-Lin Wang,Peter P. Orth,Savannah S. Downing,Soham Manni,Dixiang Mou,Duane D. Johnson,Adam Kaminski,Sergey L. Bud'ko,Paul C. Canfield###
(226090, 226092)
 We observe that PdSn4 hasphysical properties that are qualitatively similar to those of PtSn4, butfind also pronounced differences.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PtSn4
###Extremely large magnetoresistance and Kohler's rule in PdSn4: a complete study of thermodynamic, transport and band structure properties|Na Hyun Jo,Yun Wu,Lin-Lin Wang,Peter P. Orth,Savannah S. Downing,Soham Manni,Dixiang Mou,Duane D. Johnson,Adam Kaminski,Sergey L. Bud'ko,Paul C. Canfield###
(226115, 226117)
 We observe that PdSn4 hasphysical properties that are qualitatively similar to those of PtSn4, butfind also pronounced differences.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PtSn4
###Extremely large magnetoresistance and Kohler's rule in PdSn4: a complete study of thermodynamic, transport and band structure properties|Na Hyun Jo,Yun Wu,Lin-Lin Wang,Peter P. Orth,Savannah S. Downing,Soham Manni,Dixiang Mou,Duane D. Johnson,Adam Kaminski,Sergey L. Bud'ko,Paul C. Canfield###
(226150, 226152)
 Importantly, the Dirac arc node surface stateof PtSn4 is gapped out for PdSn4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PdSn4
###Extremely large magnetoresistance and Kohler's rule in PdSn4: a complete study of thermodynamic, transport and band structure properties|Na Hyun Jo,Yun Wu,Lin-Lin Wang,Peter P. Orth,Savannah S. Downing,Soham Manni,Dixiang Mou,Duane D. Johnson,Adam Kaminski,Sergey L. Bud'ko,Paul C. Canfield###
(226162, 226164)
 Importantly, the Dirac arc node surface stateof PtSn4 is gapped out for PdSn4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PdSn4
###Extremely large magnetoresistance and Kohler's rule in PdSn4: a complete study of thermodynamic, transport and band structure properties|Na Hyun Jo,Yun Wu,Lin-Lin Wang,Peter P. Orth,Savannah S. Downing,Soham Manni,Dixiang Mou,Duane D. Johnson,Adam Kaminski,Sergey L. Bud'ko,Paul C. Canfield###
(226199, 226201)
 By comparing these similar compounds,we address the origin of the extremely large magnetoresistance in PdSn4 andPtSn4; based on detailed analysis of the magnetoresistivity, rho(H,T), weconclude that neither carrier compensation nor the Dirac arc node surface stateare primary reason for the extremely large magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PtSn4
###Extremely large magnetoresistance and Kohler's rule in PdSn4: a complete study of thermodynamic, transport and band structure properties|Na Hyun Jo,Yun Wu,Lin-Lin Wang,Peter P. Orth,Savannah S. Downing,Soham Manni,Dixiang Mou,Duane D. Johnson,Adam Kaminski,Sergey L. Bud'ko,Paul C. Canfield###
(226206, 226208)
 By comparing these similar compounds,we address the origin of the extremely large magnetoresistance in PdSn4 andPtSn4; based on detailed analysis of the magnetoresistivity, rho(H,T), weconclude that neither carrier compensation nor the Dirac arc node surface stateare primary reason for the extremely large magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Extremely large magnetoresistance and Kohler's rule in PdSn4: a complete study of thermodynamic, transport and band structure properties|Na Hyun Jo,Yun Wu,Lin-Lin Wang,Peter P. Orth,Savannah S. Downing,Soham Manni,Dixiang Mou,Duane D. Johnson,Adam Kaminski,Sergey L. Bud'ko,Paul C. Canfield###
(226228, 226228)
 By comparing these similar compounds,we address the origin of the extremely large magnetoresistance in PdSn4 andPtSn4; based on detailed analysis of the magnetoresistivity, rho(H,T), weconclude that neither carrier compensation nor the Dirac arc node surface stateare primary reason for the extremely large magnetoresistance.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Non-saturating large magnetoresistance in semimetals|Ian A. Leahy,Yu-Ping Lin,Peter E. Siegfried,Andrew C. Treglia,Justin C. W. Song,Rahul M. Nandkishore,Minhyea Lee###
(226587, 226587)
 Here we present the magnetic susceptibility (chi), thetangent of the Hall angle (tanthetaH) along with magnetoresistance in fourdifferent non-magnetic semimetals with high mobilities, NbP, TaP, NbSb2 andTaSb2, all of which exhibit non-saturating large MR.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbP
###Non-saturating large magnetoresistance in semimetals|Ian A. Leahy,Yu-Ping Lin,Peter E. Siegfried,Andrew C. Treglia,Justin C. W. Song,Rahul M. Nandkishore,Minhyea Lee###
(226616, 226617)
 Here we present the magnetic susceptibility (chi), thetangent of the Hall angle (tanthetaH) along with magnetoresistance in fourdifferent non-magnetic semimetals with high mobilities, NbP, TaP, NbSb2 andTaSb2, all of which exhibit non-saturating large MR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TaP
###Non-saturating large magnetoresistance in semimetals|Ian A. Leahy,Yu-Ping Lin,Peter E. Siegfried,Andrew C. Treglia,Justin C. W. Song,Rahul M. Nandkishore,Minhyea Lee###
(226620, 226621)
 Here we present the magnetic susceptibility (chi), thetangent of the Hall angle (tanthetaH) along with magnetoresistance in fourdifferent non-magnetic semimetals with high mobilities, NbP, TaP, NbSb2 andTaSb2, all of which exhibit non-saturating large MR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbSb2
###Non-saturating large magnetoresistance in semimetals|Ian A. Leahy,Yu-Ping Lin,Peter E. Siegfried,Andrew C. Treglia,Justin C. W. Song,Rahul M. Nandkishore,Minhyea Lee###
(226624, 226626)
 Here we present the magnetic susceptibility (chi), thetangent of the Hall angle (tanthetaH) along with magnetoresistance in fourdifferent non-magnetic semimetals with high mobilities, NbP, TaP, NbSb2 andTaSb2, all of which exhibit non-saturating large MR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TaSb2
###Non-saturating large magnetoresistance in semimetals|Ian A. Leahy,Yu-Ping Lin,Peter E. Siegfried,Andrew C. Treglia,Justin C. W. Song,Rahul M. Nandkishore,Minhyea Lee###
(226631, 226633)
 Here we present the magnetic susceptibility (chi), thetangent of the Hall angle (tanthetaH) along with magnetoresistance in fourdifferent non-magnetic semimetals with high mobilities, NbP, TaP, NbSb2 andTaSb2, all of which exhibit non-saturating large MR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Non-saturating large magnetoresistance in semimetals|Ian A. Leahy,Yu-Ping Lin,Peter E. Siegfried,Andrew C. Treglia,Justin C. W. Song,Rahul M. Nandkishore,Minhyea Lee###
(226688, 226688)
 We find that thedistinctly different temperature dependences, chi(T) and the values oftanthetaH in phosphides and antimonates serve as empirical criteria tosort the MR from different origins NbP and TaP being uncompensated semimetalswith linear dispersion, in which the non-saturating magnetoresistance arisesdue to guiding center motion, while NbSb2 and TaSb2 being itcompensated semimetals, with a magnetoresistance emerging from nearly perfectcharge compensation of two quadratic bands.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbP
###Non-saturating large magnetoresistance in semimetals|Ian A. Leahy,Yu-Ping Lin,Peter E. Siegfried,Andrew C. Treglia,Justin C. W. Song,Rahul M. Nandkishore,Minhyea Lee###
(226722, 226723)
 We find that thedistinctly different temperature dependences, chi(T) and the values oftanthetaH in phosphides and antimonates serve as empirical criteria tosort the MR from different origins NbP and TaP being uncompensated semimetalswith linear dispersion, in which the non-saturating magnetoresistance arisesdue to guiding center motion, while NbSb2 and TaSb2 being itcompensated semimetals, with a magnetoresistance emerging from nearly perfectcharge compensation of two quadratic bands.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TaP
###Non-saturating large magnetoresistance in semimetals|Ian A. Leahy,Yu-Ping Lin,Peter E. Siegfried,Andrew C. Treglia,Justin C. W. Song,Rahul M. Nandkishore,Minhyea Lee###
(226727, 226728)
 We find that thedistinctly different temperature dependences, chi(T) and the values oftanthetaH in phosphides and antimonates serve as empirical criteria tosort the MR from different origins NbP and TaP being uncompensated semimetalswith linear dispersion, in which the non-saturating magnetoresistance arisesdue to guiding center motion, while NbSb2 and TaSb2 being itcompensated semimetals, with a magnetoresistance emerging from nearly perfectcharge compensation of two quadratic bands.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbSb2
###Non-saturating large magnetoresistance in semimetals|Ian A. Leahy,Yu-Ping Lin,Peter E. Siegfried,Andrew C. Treglia,Justin C. W. Song,Rahul M. Nandkishore,Minhyea Lee###
(226772, 226774)
 We find that thedistinctly different temperature dependences, chi(T) and the values oftanthetaH in phosphides and antimonates serve as empirical criteria tosort the MR from different origins NbP and TaP being uncompensated semimetalswith linear dispersion, in which the non-saturating magnetoresistance arisesdue to guiding center motion, while NbSb2 and TaSb2 being itcompensated semimetals, with a magnetoresistance emerging from nearly perfectcharge compensation of two quadratic bands.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TaSb2
###Non-saturating large magnetoresistance in semimetals|Ian A. Leahy,Yu-Ping Lin,Peter E. Siegfried,Andrew C. Treglia,Justin C. W. Song,Rahul M. Nandkishore,Minhyea Lee###
(226778, 226780)
 We find that thedistinctly different temperature dependences, chi(T) and the values oftanthetaH in phosphides and antimonates serve as empirical criteria tosort the MR from different origins NbP and TaP being uncompensated semimetalswith linear dispersion, in which the non-saturating magnetoresistance arisesdue to guiding center motion, while NbSb2 and TaSb2 being itcompensated semimetals, with a magnetoresistance emerging from nearly perfectcharge compensation of two quadratic bands.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Non-saturating large magnetoresistance in semimetals|Ian A. Leahy,Yu-Ping Lin,Peter E. Siegfried,Andrew C. Treglia,Justin C. W. Song,Rahul M. Nandkishore,Minhyea Lee###
(226872, 226872)
 Our results illustrate how acombination of magnetotransport and susceptibility measurements may be used tocategorize the increasingly ubiquitous non-saturating large magnetoresistancein T<missing VAR>SMs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YI
###Spin Hall magnetoresistance in heterostructures consisting of noncrystalline paramagnetic YIG and Pt|Michaela Lammel,Richard Schlitz,Kevin Geishendorf,Denys Makarov,Tobias Kosub,Savio Fabretti,Helena Reichlova,Rene Huebner,Kornelius Nielsch,Andy Thomas,Sebastian T. B. Goennenwein###
(226902, 226903)
Spin Hall magnetoresistance in heterostructures consisting of noncrystalline paramagnetic YIG<missing VAR> and Pt.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Spin Hall magnetoresistance in heterostructures consisting of noncrystalline paramagnetic YIG and Pt|Michaela Lammel,Richard Schlitz,Kevin Geishendorf,Denys Makarov,Tobias Kosub,Savio Fabretti,Helena Reichlova,Rene Huebner,Kornelius Nielsch,Andy Thomas,Sebastian T. B. Goennenwein###
(226908, 226908)
Spin Hall magnetoresistance in heterostructures consisting of noncrystalline paramagnetic YIG<missing VAR> and Pt.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin Hall magnetoresistance in heterostructures consisting of noncrystalline paramagnetic YIG and Pt|Michaela Lammel,Richard Schlitz,Kevin Geishendorf,Denys Makarov,Tobias Kosub,Savio Fabretti,Helena Reichlova,Rene Huebner,Kornelius Nielsch,Andy Thomas,Sebastian T. B. Goennenwein###
(226920, 226920)
 The spin Hall magnetoresistance (SMR) effect arises from spin-transferprocesses across the interface between a spin Hall active metal and aninsulating magnet.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin Hall magnetoresistance in heterostructures consisting of noncrystalline paramagnetic YIG and Pt|Michaela Lammel,Richard Schlitz,Kevin Geishendorf,Denys Makarov,Tobias Kosub,Savio Fabretti,Helena Reichlova,Rene Huebner,Kornelius Nielsch,Andy Thomas,Sebastian T. B. Goennenwein###
(226970, 226970)
 While the SMR response of ferrimagnetic andantiferromagnetic insulators has been studied extensively, the SMR of aparamagnetic spin ensemble is not well established.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin Hall magnetoresistance in heterostructures consisting of noncrystalline paramagnetic YIG and Pt|Michaela Lammel,Richard Schlitz,Kevin Geishendorf,Denys Makarov,Tobias Kosub,Savio Fabretti,Helena Reichlova,Rene Huebner,Kornelius Nielsch,Andy Thomas,Sebastian T. B. Goennenwein###
(226998, 226998)
 While the SMR response of ferrimagnetic andantiferromagnetic insulators has been studied extensively, the SMR of aparamagnetic spin ensemble is not well established.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin Hall magnetoresistance in heterostructures consisting of noncrystalline paramagnetic YIG and Pt|Michaela Lammel,Richard Schlitz,Kevin Geishendorf,Denys Makarov,Tobias Kosub,Savio Fabretti,Helena Reichlova,Rene Huebner,Kornelius Nielsch,Andy Thomas,Sebastian T. B. Goennenwein###
(227171, 227171)
 Nevertheless, we observe a clear magnetoresistanceresponse with a dependence on the magnetic field orientation characteristic forthe SMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin Hall magnetoresistance in heterostructures consisting of noncrystalline paramagnetic YIG and Pt|Michaela Lammel,Richard Schlitz,Kevin Geishendorf,Denys Makarov,Tobias Kosub,Savio Fabretti,Helena Reichlova,Rene Huebner,Kornelius Nielsch,Andy Thomas,Sebastian T. B. Goennenwein###
(227194, 227194)
 We propose two models for the origin of the SMR response inparamagnetic insulator/Pt heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Spin Hall magnetoresistance in heterostructures consisting of noncrystalline paramagnetic YIG and Pt|Michaela Lammel,Richard Schlitz,Kevin Geishendorf,Denys Makarov,Tobias Kosub,Savio Fabretti,Helena Reichlova,Rene Huebner,Kornelius Nielsch,Andy Thomas,Sebastian T. B. Goennenwein###
(227207, 227207)
 We propose two models for the origin of the SMR response inparamagnetic insulator/Pt heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin Hall magnetoresistance in heterostructures consisting of noncrystalline paramagnetic YIG and Pt|Michaela Lammel,Richard Schlitz,Kevin Geishendorf,Denys Makarov,Tobias Kosub,Savio Fabretti,Helena Reichlova,Rene Huebner,Kornelius Nielsch,Andy Thomas,Sebastian T. B. Goennenwein###
(227222, 227222)
 The first model describes the SMRof an ensemble of non-interacting paramagnetic moments, while the second modeldescribes the magnetoresistance arising by considering the total net moment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Large magnetoresistance in an electric field controlled antiferromagnetic tunnel junction|Yurong Su,Jia Zhang,Jing-Tao Lü,Jeongmin Hong,Long You###
(227429, 227429)
 Here we proposean electric-field controlled antiferromagnetic (AFM) tunnel junction withstructure of piezoelectric substrate/Mn3Pt/SrTiO3/Pt operating by the magneticphase transition (MPT) of antiferromagnet Mn3Pt through its magneto-volumeeffect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn3Pt/SrTiO3/Pt
###Large magnetoresistance in an electric field controlled antiferromagnetic tunnel junction|Yurong Su,Jia Zhang,Jing-Tao Lü,Jeongmin Hong,Long You###
(227448, 227457)
 Here we proposean electric-field controlled antiferromagnetic (AFM) tunnel junction withstructure of piezoelectric substrate/Mn3Pt/SrTiO3/Pt operating by the magneticphase transition (MPT) of antiferromagnet Mn3Pt through its magneto-volumeeffect.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Mn3Pt
###Large magnetoresistance in an electric field controlled antiferromagnetic tunnel junction|Yurong Su,Jia Zhang,Jing-Tao Lü,Jeongmin Hong,Long You###
(227482, 227484)
 Here we proposean electric-field controlled antiferromagnetic (AFM) tunnel junction withstructure of piezoelectric substrate/Mn3Pt/SrTiO3/Pt operating by the magneticphase transition (MPT) of antiferromagnet Mn3Pt through its magneto-volumeeffect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Large magnetoresistance in an electric field controlled antiferromagnetic tunnel junction|Yurong Su,Jia Zhang,Jing-Tao Lü,Jeongmin Hong,Long You###
(227511, 227511)
 The transport properties of the proposed AFM<missing VAR> tunnel junction have beeninvestigated by employing first-principles calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn3Pt
###Large magnetoresistance in an electric field controlled antiferromagnetic tunnel junction|Yurong Su,Jia Zhang,Jing-Tao Lü,Jeongmin Hong,Long You###
(227563, 227565)
 Our results show thata magnetoresistance over hundreds of percent is achievable when Mn3Pt undergoesMPT from a collinear AFM<missing VAR> state to a non-collinear AFM<missing VAR> state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Large magnetoresistance in an electric field controlled antiferromagnetic tunnel junction|Yurong Su,Jia Zhang,Jing-Tao Lü,Jeongmin Hong,Long You###
(227581, 227581)
 Our results show thata magnetoresistance over hundreds of percent is achievable when Mn3Pt undergoesMPT from a collinear AFM<missing VAR> state to a non-collinear AFM<missing VAR> state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Large magnetoresistance in an electric field controlled antiferromagnetic tunnel junction|Yurong Su,Jia Zhang,Jing-Tao Lü,Jeongmin Hong,Long You###
(227595, 227595)
 Our results show thata magnetoresistance over hundreds of percent is achievable when Mn3Pt undergoesMPT from a collinear AFM<missing VAR> state to a non-collinear AFM<missing VAR> state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn3Pt
###Large magnetoresistance in an electric field controlled antiferromagnetic tunnel junction|Yurong Su,Jia Zhang,Jing-Tao Lü,Jeongmin Hong,Long You###
(227658, 227660)
 Band structureanalysis based on density functional calculations shows that the large TMR canbe attributed to the joint effect of significant different Fermi surface ofMn3Pt at two AFM<missing VAR> phases and the band symmetry filtering effect of the SrTiO3tunnel barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Large magnetoresistance in an electric field controlled antiferromagnetic tunnel junction|Yurong Su,Jia Zhang,Jing-Tao Lü,Jeongmin Hong,Long You###
(227667, 227667)
 Band structureanalysis based on density functional calculations shows that the large TMR canbe attributed to the joint effect of significant different Fermi surface ofMn3Pt at two AFM<missing VAR> phases and the band symmetry filtering effect of the SrTiO3tunnel barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Large magnetoresistance in an electric field controlled antiferromagnetic tunnel junction|Yurong Su,Jia Zhang,Jing-Tao Lü,Jeongmin Hong,Long You###
(227688, 227691)
 Band structureanalysis based on density functional calculations shows that the large TMR canbe attributed to the joint effect of significant different Fermi surface ofMn3Pt at two AFM<missing VAR> phases and the band symmetry filtering effect of the SrTiO3tunnel barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Large magnetoresistance in an electric field controlled antiferromagnetic tunnel junction|Yurong Su,Jia Zhang,Jing-Tao Lü,Jeongmin Hong,Long You###
(227699, 227699)
 In addition, other than single-crystalline tunnel barrier, wealso discuss the robustness of the proposed magnetoresistance effect byconsidering amorphous AlOx barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Al
###Large magnetoresistance in an electric field controlled antiferromagnetic tunnel junction|Yurong Su,Jia Zhang,Jing-Tao Lü,Jeongmin Hong,Long You###
(227745, 227745)
 In addition, other than single-crystalline tunnel barrier, wealso discuss the robustness of the proposed magnetoresistance effect byconsidering amorphous AlOx barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Large magnetoresistance in an electric field controlled antiferromagnetic tunnel junction|Yurong Su,Jia Zhang,Jing-Tao Lü,Jeongmin Hong,Long You###
(227781, 227781)
 Our results may open perspective way foreffectively electrical writing and reading of the AFM<missing VAR> state and its applicationin energy efficient magnetic memory devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Quantum Transport in Topological Semimetals under Magnetic Fields|Hai-Zhou Lu,Shun-Qing Shen###
(227982, 227982)
 Atweak magnetic fields, there are competitions between the positivemagnetoresistivity induced by the weak anti-localization effect and negativemagnetoresistivity related to the nontrivial Berry curvature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Quantum Transport in Topological Semimetals under Magnetic Fields|Hai-Zhou Lu,Shun-Qing Shen###
(228173, 228173)
 At strong magnetic fields, specifically, in the quantum limit,the magnetoconduction depends on the type and range of the scattering potentialof disorder.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

InSb
###Equivalence of Effective Medium and Random Resistor Network models for disorder-induced unsaturating linear magnetoresistance|Navneeth Ramakrishnan,Ying Tong Lai,Silvia Lara,Meera M. Parish,Shaffique Adam###
(228444, 228445)
 A linear unsaturating magnetoresistance at high perpendicular magneticfields, together with a quadratic positive magnetoresistance at low fields, hasbeen seen in many different experimental materials, ranging from silverchalcogenides and thin films of InSb to topological materials like graphene andDirac semimetals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Equivalence of Effective Medium and Random Resistor Network models for disorder-induced unsaturating linear magnetoresistance|Navneeth Ramakrishnan,Ying Tong Lai,Silvia Lara,Meera M. Parish,Shaffique Adam###
(228465, 228465)
 In the literature, two very different theoretical approacheshave been used to explain this classical magnetoresistance as a consequence ofsample disorder.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Multiband ballistic transport and anisotropic commensurability magnetoresistance in antidot lattices of AB-stacked trilayer graphene|Shingo Tajima,Ryoya Ebisuoka,Kenji Watanabe,Takashi Taniguchi,Ryuta Yagi###
(228798, 228798)
Multiband ballistic transport and anisotropic commensurability magnetoresistance in antidot lattices of AB-stacked trilayer graphene.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Multiband ballistic transport and anisotropic commensurability magnetoresistance in antidot lattices of AB-stacked trilayer graphene|Shingo Tajima,Ryoya Ebisuoka,Kenji Watanabe,Takashi Taniguchi,Ryuta Yagi###
(228839, 228839)
 Ballistic transport was studied in a multiple-band system consisting of anantidot lattice of AB-stacked trilayer graphene.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Multiband ballistic transport and anisotropic commensurability magnetoresistance in antidot lattices of AB-stacked trilayer graphene|Shingo Tajima,Ryoya Ebisuoka,Kenji Watanabe,Takashi Taniguchi,Ryuta Yagi###
(228909, 228909)
 The low temperaturemagnetoresistance showed commensurability peaks arising from matching of theantidot lattice period and radius of cyclotron orbits for each mono- andbilayer-like band in AB stacked trilayer graphene.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Extreme Magnetoresistance in Magnetic Rare Earth Monopnictides|Linda Ye,Takehito Suzuki,Christina R. Wicker,Joseph G. Checkelsky###
(229313, 229315)
 Exemplified byWTe2 and rare earth monopnictide La(Sb,Bi), these systems tend to benon-magnetic, nearly compensated semimetals and represent a platform for largemagnetoresistance driven by intrinsic electronic structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 9, 'T', 2],[278.0, 30, 'T', 3]

La
###Extreme Magnetoresistance in Magnetic Rare Earth Monopnictides|Linda Ye,Takehito Suzuki,Christina R. Wicker,Joseph G. Checkelsky###
(229325, 229325)
 Exemplified byWTe2 and rare earth monopnictide La(Sb,Bi), these systems tend to benon-magnetic, nearly compensated semimetals and represent a platform for largemagnetoresistance driven by intrinsic electronic structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 9, 'T', 2],[268.0, 30, 'T', 3]

Sb
###Extreme Magnetoresistance in Magnetic Rare Earth Monopnictides|Linda Ye,Takehito Suzuki,Christina R. Wicker,Joseph G. Checkelsky###
(229327, 229327)
 Exemplified byWTe2 and rare earth monopnictide La(Sb,Bi), these systems tend to benon-magnetic, nearly compensated semimetals and represent a platform for largemagnetoresistance driven by intrinsic electronic structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 9, 'T', 2],[266.0, 30, 'T', 3]

Bi
###Extreme Magnetoresistance in Magnetic Rare Earth Monopnictides|Linda Ye,Takehito Suzuki,Christina R. Wicker,Joseph G. Checkelsky###
(229329, 229329)
 Exemplified byWTe2 and rare earth monopnictide La(Sb,Bi), these systems tend to benon-magnetic, nearly compensated semimetals and represent a platform for largemagnetoresistance driven by intrinsic electronic structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 9, 'T', 2],[264.0, 30, 'T', 3]

In
###Extreme Magnetoresistance in Magnetic Rare Earth Monopnictides|Linda Ye,Takehito Suzuki,Christina R. Wicker,Joseph G. Checkelsky###
(229434, 229434)
 In particular, CeSbexhibits XMR in excess of 1.6 times 106 % at fields of 9 T while themagnetoresistance itself is non-monotonic across the various magnetic phasesand shows a transition from negative magnetoresistance to XMR with field abovemagnetic ordering temperature T<missing VAR>N.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 9, 'T', 0],[159.0, 30, 'T', 1]

CeSb
###Extreme Magnetoresistance in Magnetic Rare Earth Monopnictides|Linda Ye,Takehito Suzuki,Christina R. Wicker,Joseph G. Checkelsky###
(229439, 229440)
 In particular, CeSbexhibits XMR in excess of 1.6 times 106 % at fields of 9 T while themagnetoresistance itself is non-monotonic across the various magnetic phasesand shows a transition from negative magnetoresistance to XMR with field abovemagnetic ordering temperature T<missing VAR>N.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 9, 'T', 0],[153.0, 30, 'T', 1]

N
###Extreme Magnetoresistance in Magnetic Rare Earth Monopnictides|Linda Ye,Takehito Suzuki,Christina R. Wicker,Joseph G. Checkelsky###
(229531, 229531)
 In particular, CeSbexhibits XMR in excess of 1.6 times 106 % at fields of 9 T while themagnetoresistance itself is non-monotonic across the various magnetic phasesand shows a transition from negative magnetoresistance to XMR with field abovemagnetic ordering temperature T<missing VAR>N.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 9, 'T', 0],[62.0, 30, 'T', 1]

Ce
###Extreme Magnetoresistance in Magnetic Rare Earth Monopnictides|Linda Ye,Takehito Suzuki,Christina R. Wicker,Joseph G. Checkelsky###
(229629, 229629)
 We show that theoverall response can be understood as the modulation of conductivity by the Ceorbital state and for intermediate temperatures can be characterized by aneffective medium model.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 9, 'T', 2],[36.0, 30, 'T', 1]

GdBi
###Extreme Magnetoresistance in Magnetic Rare Earth Monopnictides|Linda Ye,Takehito Suzuki,Christina R. Wicker,Joseph G. Checkelsky###
(229674, 229675)
 Comparison to the orbitally quenched compound GdBisupports the correlation of XMR with the onset of magnetic ordering andcompensation and highlights the unique combination of orbital inversion andtype-I magnetic ordering in CeSb in determining its large response.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, 9, 'T', 3],[81.0, 30, 'T', 2]

I
###Extreme Magnetoresistance in Magnetic Rare Earth Monopnictides|Linda Ye,Takehito Suzuki,Christina R. Wicker,Joseph G. Checkelsky###
(229728, 229728)
 Comparison to the orbitally quenched compound GdBisupports the correlation of XMR with the onset of magnetic ordering andcompensation and highlights the unique combination of orbital inversion andtype-I magnetic ordering in CeSb in determining its large response.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[259.0, 9, 'T', 3],[135.0, 30, 'T', 2]

CeSb
###Extreme Magnetoresistance in Magnetic Rare Earth Monopnictides|Linda Ye,Takehito Suzuki,Christina R. Wicker,Joseph G. Checkelsky###
(229736, 229737)
 Comparison to the orbitally quenched compound GdBisupports the correlation of XMR with the onset of magnetic ordering andcompensation and highlights the unique combination of orbital inversion andtype-I magnetic ordering in CeSb in determining its large response.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[267.0, 9, 'T', 3],[143.0, 30, 'T', 2]

Pt/CoFe2O4
###Magnetoresistance in Hybrid Pt/CoFe2O4 Bilayers Controlled by Competing Spin Accumulation and Interfacial Chemical Reconstruction|Hari Babu Vasili,Matheus Gamino,Jaume Gazquez,Florencio Sanchez,Manuel Valvidares,Pierluigi Gargiani,Eric Pellegrin,Josep Fontcuberta###
(229817, 229823)
Magnetoresistance in Hybrid Pt/CoFe2O4 Bilayers Controlled by Competing Spin Accumulation and Interfacial Chemical Reconstruction.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

As
###Magnetoresistance in Hybrid Pt/CoFe2O4 Bilayers Controlled by Competing Spin Accumulation and Interfacial Chemical Reconstruction|Hari Babu Vasili,Matheus Gamino,Jaume Gazquez,Florencio Sanchez,Manuel Valvidares,Pierluigi Gargiani,Eric Pellegrin,Josep Fontcuberta###
(230004, 230004)
 As interface phenomena govern thespin conductance across the metal/ferromagnetic-insulator heterostructures,unraveling these distinct contributions is pivotal to full understanding ofspin current conductance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Magnetoresistance in Hybrid Pt/CoFe2O4 Bilayers Controlled by Competing Spin Accumulation and Interfacial Chemical Reconstruction|Hari Babu Vasili,Matheus Gamino,Jaume Gazquez,Florencio Sanchez,Manuel Valvidares,Pierluigi Gargiani,Eric Pellegrin,Josep Fontcuberta###
(230085, 230085)
 We report here x<missing VAR>-ray absorption and magnetic circulardichroism (XMCD) at Pt-M<missing VAR> and (Co,Fe)-L<missing VAR> absorption edges and atomically-resolvedenergy loss electron spectroscopy (EELS) data of Pt/CoFe2O4 bilayers whereCoFe2O4 layers have been capped by Pt grown at different temperatures.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Magnetoresistance in Hybrid Pt/CoFe2O4 Bilayers Controlled by Competing Spin Accumulation and Interfacial Chemical Reconstruction|Hari Babu Vasili,Matheus Gamino,Jaume Gazquez,Florencio Sanchez,Manuel Valvidares,Pierluigi Gargiani,Eric Pellegrin,Josep Fontcuberta###
(230091, 230091)
 We report here x<missing VAR>-ray absorption and magnetic circulardichroism (XMCD) at Pt-M<missing VAR> and (Co,Fe)-L<missing VAR> absorption edges and atomically-resolvedenergy loss electron spectroscopy (EELS) data of Pt/CoFe2O4 bilayers whereCoFe2O4 layers have been capped by Pt grown at different temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Magnetoresistance in Hybrid Pt/CoFe2O4 Bilayers Controlled by Competing Spin Accumulation and Interfacial Chemical Reconstruction|Hari Babu Vasili,Matheus Gamino,Jaume Gazquez,Florencio Sanchez,Manuel Valvidares,Pierluigi Gargiani,Eric Pellegrin,Josep Fontcuberta###
(230098, 230098)
 We report here x<missing VAR>-ray absorption and magnetic circulardichroism (XMCD) at Pt-M<missing VAR> and (Co,Fe)-L<missing VAR> absorption edges and atomically-resolvedenergy loss electron spectroscopy (EELS) data of Pt/CoFe2O4 bilayers whereCoFe2O4 layers have been capped by Pt grown at different temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Magnetoresistance in Hybrid Pt/CoFe2O4 Bilayers Controlled by Competing Spin Accumulation and Interfacial Chemical Reconstruction|Hari Babu Vasili,Matheus Gamino,Jaume Gazquez,Florencio Sanchez,Manuel Valvidares,Pierluigi Gargiani,Eric Pellegrin,Josep Fontcuberta###
(230100, 230100)
 We report here x<missing VAR>-ray absorption and magnetic circulardichroism (XMCD) at Pt-M<missing VAR> and (Co,Fe)-L<missing VAR> absorption edges and atomically-resolvedenergy loss electron spectroscopy (EELS) data of Pt/CoFe2O4 bilayers whereCoFe2O4 layers have been capped by Pt grown at different temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Magnetoresistance in Hybrid Pt/CoFe2O4 Bilayers Controlled by Competing Spin Accumulation and Interfacial Chemical Reconstruction|Hari Babu Vasili,Matheus Gamino,Jaume Gazquez,Florencio Sanchez,Manuel Valvidares,Pierluigi Gargiani,Eric Pellegrin,Josep Fontcuberta###
(230128, 230128)
 We report here x<missing VAR>-ray absorption and magnetic circulardichroism (XMCD) at Pt-M<missing VAR> and (Co,Fe)-L<missing VAR> absorption edges and atomically-resolvedenergy loss electron spectroscopy (EELS) data of Pt/CoFe2O4 bilayers whereCoFe2O4 layers have been capped by Pt grown at different temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt/CoFe2O4
###Magnetoresistance in Hybrid Pt/CoFe2O4 Bilayers Controlled by Competing Spin Accumulation and Interfacial Chemical Reconstruction|Hari Babu Vasili,Matheus Gamino,Jaume Gazquez,Florencio Sanchez,Manuel Valvidares,Pierluigi Gargiani,Eric Pellegrin,Josep Fontcuberta###
(230135, 230141)
 We report here x<missing VAR>-ray absorption and magnetic circulardichroism (XMCD) at Pt-M<missing VAR> and (Co,Fe)-L<missing VAR> absorption edges and atomically-resolvedenergy loss electron spectroscopy (EELS) data of Pt/CoFe2O4 bilayers whereCoFe2O4 layers have been capped by Pt grown at different temperatures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

CoFe2O4
###Magnetoresistance in Hybrid Pt/CoFe2O4 Bilayers Controlled by Competing Spin Accumulation and Interfacial Chemical Reconstruction|Hari Babu Vasili,Matheus Gamino,Jaume Gazquez,Florencio Sanchez,Manuel Valvidares,Pierluigi Gargiani,Eric Pellegrin,Josep Fontcuberta###
(230148, 230152)
 We report here x<missing VAR>-ray absorption and magnetic circulardichroism (XMCD) at Pt-M<missing VAR> and (Co,Fe)-L<missing VAR> absorption edges and atomically-resolvedenergy loss electron spectroscopy (EELS) data of Pt/CoFe2O4 bilayers whereCoFe2O4 layers have been capped by Pt grown at different temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Magnetoresistance in Hybrid Pt/CoFe2O4 Bilayers Controlled by Competing Spin Accumulation and Interfacial Chemical Reconstruction|Hari Babu Vasili,Matheus Gamino,Jaume Gazquez,Florencio Sanchez,Manuel Valvidares,Pierluigi Gargiani,Eric Pellegrin,Josep Fontcuberta###
(230164, 230164)
 We report here x<missing VAR>-ray absorption and magnetic circulardichroism (XMCD) at Pt-M<missing VAR> and (Co,Fe)-L<missing VAR> absorption edges and atomically-resolvedenergy loss electron spectroscopy (EELS) data of Pt/CoFe2O4 bilayers whereCoFe2O4 layers have been capped by Pt grown at different temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Magnetoresistance in Hybrid Pt/CoFe2O4 Bilayers Controlled by Competing Spin Accumulation and Interfacial Chemical Reconstruction|Hari Babu Vasili,Matheus Gamino,Jaume Gazquez,Florencio Sanchez,Manuel Valvidares,Pierluigi Gargiani,Eric Pellegrin,Josep Fontcuberta###
(230212, 230212)
 It turnsout that the ADMR differs dramatically, being either dominated by spin Hallmagnetoresistance (SMR) associated to spin Hall effect or anisotropicmagnetoresistance (AMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Magnetoresistance in Hybrid Pt/CoFe2O4 Bilayers Controlled by Competing Spin Accumulation and Interfacial Chemical Reconstruction|Hari Babu Vasili,Matheus Gamino,Jaume Gazquez,Florencio Sanchez,Manuel Valvidares,Pierluigi Gargiani,Eric Pellegrin,Josep Fontcuberta###
(230245, 230245)
 The XMCD<missing VAR> and EELS data indicate that the Pt layergrown at room temperature does not display any magnetic moment, whereas whengrown at higher temperature it is magnetic due to interfacial Pt-(Co,Fe)alloying.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Magnetoresistance in Hybrid Pt/CoFe2O4 Bilayers Controlled by Competing Spin Accumulation and Interfacial Chemical Reconstruction|Hari Babu Vasili,Matheus Gamino,Jaume Gazquez,Florencio Sanchez,Manuel Valvidares,Pierluigi Gargiani,Eric Pellegrin,Josep Fontcuberta###
(230253, 230253)
 The XMCD<missing VAR> and EELS data indicate that the Pt layergrown at room temperature does not display any magnetic moment, whereas whengrown at higher temperature it is magnetic due to interfacial Pt-(Co,Fe)alloying.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Magnetoresistance in Hybrid Pt/CoFe2O4 Bilayers Controlled by Competing Spin Accumulation and Interfacial Chemical Reconstruction|Hari Babu Vasili,Matheus Gamino,Jaume Gazquez,Florencio Sanchez,Manuel Valvidares,Pierluigi Gargiani,Eric Pellegrin,Josep Fontcuberta###
(230263, 230263)
 The XMCD<missing VAR> and EELS data indicate that the Pt layergrown at room temperature does not display any magnetic moment, whereas whengrown at higher temperature it is magnetic due to interfacial Pt-(Co,Fe)alloying.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Magnetoresistance in Hybrid Pt/CoFe2O4 Bilayers Controlled by Competing Spin Accumulation and Interfacial Chemical Reconstruction|Hari Babu Vasili,Matheus Gamino,Jaume Gazquez,Florencio Sanchez,Manuel Valvidares,Pierluigi Gargiani,Eric Pellegrin,Josep Fontcuberta###
(230314, 230314)
 The XMCD<missing VAR> and EELS data indicate that the Pt layergrown at room temperature does not display any magnetic moment, whereas whengrown at higher temperature it is magnetic due to interfacial Pt-(Co,Fe)alloying.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Magnetoresistance in Hybrid Pt/CoFe2O4 Bilayers Controlled by Competing Spin Accumulation and Interfacial Chemical Reconstruction|Hari Babu Vasili,Matheus Gamino,Jaume Gazquez,Florencio Sanchez,Manuel Valvidares,Pierluigi Gargiani,Eric Pellegrin,Josep Fontcuberta###
(230317, 230317)
 The XMCD<missing VAR> and EELS data indicate that the Pt layergrown at room temperature does not display any magnetic moment, whereas whengrown at higher temperature it is magnetic due to interfacial Pt-(Co,Fe)alloying.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Magnetoresistance in Hybrid Pt/CoFe2O4 Bilayers Controlled by Competing Spin Accumulation and Interfacial Chemical Reconstruction|Hari Babu Vasili,Matheus Gamino,Jaume Gazquez,Florencio Sanchez,Manuel Valvidares,Pierluigi Gargiani,Eric Pellegrin,Josep Fontcuberta###
(230319, 230319)
 The XMCD<missing VAR> and EELS data indicate that the Pt layergrown at room temperature does not display any magnetic moment, whereas whengrown at higher temperature it is magnetic due to interfacial Pt-(Co,Fe)alloying.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Tilted Dirac Cone Effect on Interlayer Magnetoresistance in α-(BEDT-TTF)$_2$I$_3$|Naoya Tajima,Takao Morinari###
(230389, 230389)
Tilted Dirac Cone Effect on Interlayer Magnetoresistance in -(BEDT-TTF)2I3.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Tilted Dirac Cone Effect on Interlayer Magnetoresistance in α-(BEDT-TTF)$_2$I$_3$|Naoya Tajima,Takao Morinari###
(230396, 230396)
Tilted Dirac Cone Effect on Interlayer Magnetoresistance in -(BEDT-TTF)2I3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I3
###Tilted Dirac Cone Effect on Interlayer Magnetoresistance in α-(BEDT-TTF)$_2$I$_3$|Naoya Tajima,Takao Morinari###
(230399, 230400)
Tilted Dirac Cone Effect on Interlayer Magnetoresistance in -(BEDT-TTF)2I3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Tilted Dirac Cone Effect on Interlayer Magnetoresistance in α-(BEDT-TTF)$_2$I$_3$|Naoya Tajima,Takao Morinari###
(230431, 230431)
 We report the effect of Dirac cone tilting on interlayer magnetoresistance inalpha-(BEDT-TTF)2I3, which is a Dirac semimetal under pressure.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Tilted Dirac Cone Effect on Interlayer Magnetoresistance in α-(BEDT-TTF)$_2$I$_3$|Naoya Tajima,Takao Morinari###
(230438, 230438)
 We report the effect of Dirac cone tilting on interlayer magnetoresistance inalpha-(BEDT-TTF)2I3, which is a Dirac semimetal under pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I3
###Tilted Dirac Cone Effect on Interlayer Magnetoresistance in α-(BEDT-TTF)$_2$I$_3$|Naoya Tajima,Takao Morinari###
(230441, 230442)
 We report the effect of Dirac cone tilting on interlayer magnetoresistance inalpha-(BEDT-TTF)2I3, which is a Dirac semimetal under pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Tilted Dirac Cone Effect on Interlayer Magnetoresistance in α-(BEDT-TTF)$_2$I$_3$|Naoya Tajima,Takao Morinari###
(230498, 230499)
 Fittingof the experimental data by the theoretical formula suggests that the system isclose to a type-II Dirac semimetal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Fermi surface properties of the bifunctional organic metal $κ$-(BETS)$_2$Mn[N(CN)$_2$]$_3$ near the metal--insulator transition|V. N. Zverev,W. Biberacher,S. Oberbauer,I. Sheikin,P. Alemany,E. Canadell,M. V. Kartsovnik###
(230532, 230532)
Fermi surface properties of the bifunctional organic metal -(BETS)2Mn[N(CN)2]3 near the metal--insulator transition.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Fermi surface properties of the bifunctional organic metal $κ$-(BETS)$_2$Mn[N(CN)$_2$]$_3$ near the metal--insulator transition|V. N. Zverev,W. Biberacher,S. Oberbauer,I. Sheikin,P. Alemany,E. Canadell,M. V. Kartsovnik###
(230535, 230535)
Fermi surface properties of the bifunctional organic metal -(BETS)2Mn[N(CN)2]3 near the metal--insulator transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn[N(CN)2]3
###Fermi surface properties of the bifunctional organic metal $κ$-(BETS)$_2$Mn[N(CN)$_2$]$_3$ near the metal--insulator transition|V. N. Zverev,W. Biberacher,S. Oberbauer,I. Sheikin,P. Alemany,E. Canadell,M. V. Kartsovnik###
(230538, 230547)
Fermi surface properties of the bifunctional organic metal -(BETS)2Mn[N(CN)2]3 near the metal--insulator transition.
EXCEPTION 1: Square brackets detected! Chemical formula was modified to: Mn(N(CN)2)3
0,0,0,0,0,0.375,0.5625,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.0625,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Fermi surface properties of the bifunctional organic metal $κ$-(BETS)$_2$Mn[N(CN)$_2$]$_3$ near the metal--insulator transition|V. N. Zverev,W. Biberacher,S. Oberbauer,I. Sheikin,P. Alemany,E. Canadell,M. V. Kartsovnik###
(230593, 230593)
 We present detailed studies of the high-field magnetoresistance of thelayered organic metal kappa-(BETS)2-Mn-[N(CN)2]3 under a pressureslightly above the insulator-metal transition.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Fermi surface properties of the bifunctional organic metal $κ$-(BETS)$_2$Mn[N(CN)$_2$]$_3$ near the metal--insulator transition|V. N. Zverev,W. Biberacher,S. Oberbauer,I. Sheikin,P. Alemany,E. Canadell,M. V. Kartsovnik###
(230596, 230596)
 We present detailed studies of the high-field magnetoresistance of thelayered organic metal kappa-(BETS)2-Mn-[N(CN)2]3 under a pressureslightly above the insulator-metal transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Fermi surface properties of the bifunctional organic metal $κ$-(BETS)$_2$Mn[N(CN)$_2$]$_3$ near the metal--insulator transition|V. N. Zverev,W. Biberacher,S. Oberbauer,I. Sheikin,P. Alemany,E. Canadell,M. V. Kartsovnik###
(230600, 230600)
 We present detailed studies of the high-field magnetoresistance of thelayered organic metal kappa-(BETS)2-Mn-[N(CN)2]3 under a pressureslightly above the insulator-metal transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.7Sr0.3MnO3
###Engineering Large Anisotropic Magnetoresistance in La0.7Sr0.3MnO3 Films at Room Temperature|Paolo Perna,Davide Maccariello,Fernando Ajejas,Ruben Guerrero,Laurence Méchin,Stephane Flament,Jacobo Santamaria,Rodolfo Miranda,Julio Camarero###
(231012, 231018)
Engineering Large Anisotropic Magnetoresistance in La0.7Sr0.3MnO3 Films at Room Temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.7Sr0.3MnO3
###Engineering Large Anisotropic Magnetoresistance in La0.7Sr0.3MnO3 Films at Room Temperature|Paolo Perna,Davide Maccariello,Fernando Ajejas,Ruben Guerrero,Laurence Méchin,Stephane Flament,Jacobo Santamaria,Rodolfo Miranda,Julio Camarero###
(231230, 231236)
 Here we report on the ability toinduce a dominant switchable magnetoresistance in La0.7Sr0.3MnO3 epitaxialfilms, at room temperature (RT).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Engineering Large Anisotropic Magnetoresistance in La0.7Sr0.3MnO3 Films at Room Temperature|Paolo Perna,Davide Maccariello,Fernando Ajejas,Ruben Guerrero,Laurence Méchin,Stephane Flament,Jacobo Santamaria,Rodolfo Miranda,Julio Camarero###
(231334, 231334)
 By engineering an extrinsic magneticanisotropy, we show a large enhancement of anisotropic magnetoresistance (AMR)which leads to, at RT, signal changes much larger than the other contributionssuch as the colossal magnetoresistance (CMR).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Giant gate-controlled proximity magnetoresistance in semiconductor-based ferromagnetic/nonmagnetic bilayers|Kosuke Takiguchi,Le Duc Anh,Takahiro Chiba,Tomohiro Koyama,Daichi Chiba,Masaaki Tanaka###
(231582, 231582)
 Recently,new types of MR have been observed in much simpler bilayers consisting offerromagnetic (FM)/nonmagnetic (NM) thin films; however, the magnitude of MR inthese materials is very small (0.01  1%).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 1, '%', 0],[123.0, 80, '%', 1],[127.0, 14, 'T', 1]

N
###Giant gate-controlled proximity magnetoresistance in semiconductor-based ferromagnetic/nonmagnetic bilayers|Kosuke Takiguchi,Le Duc Anh,Takahiro Chiba,Tomohiro Koyama,Daichi Chiba,Masaaki Tanaka###
(231589, 231589)
 Recently,new types of MR have been observed in much simpler bilayers consisting offerromagnetic (FM)/nonmagnetic (NM) thin films; however, the magnitude of MR inthese materials is very small (0.01  1%).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 1, '%', 0],[116.0, 80, '%', 1],[120.0, 14, 'T', 1]

N
###Giant gate-controlled proximity magnetoresistance in semiconductor-based ferromagnetic/nonmagnetic bilayers|Kosuke Takiguchi,Le Duc Anh,Takahiro Chiba,Tomohiro Koyama,Daichi Chiba,Masaaki Tanaka###
(231641, 231641)
 Here, we demonstrate that NM<missing VAR>/FM<missing VAR>bilayers consisting of a NM<missing VAR> InAs quantum well conductive channel and aninsulating FM<missing VAR> (Ga,Fe)Sb layer exhibit giant proximity magnetoresistance (PMR)(80% at 14 T).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 1, '%', 1],[64.0, 80, '%', 0],[68.0, 14, 'T', 0]

F
###Giant gate-controlled proximity magnetoresistance in semiconductor-based ferromagnetic/nonmagnetic bilayers|Kosuke Takiguchi,Le Duc Anh,Takahiro Chiba,Tomohiro Koyama,Daichi Chiba,Masaaki Tanaka###
(231644, 231644)
 Here, we demonstrate that NM<missing VAR>/FM<missing VAR>bilayers consisting of a NM<missing VAR> InAs quantum well conductive channel and aninsulating FM<missing VAR> (Ga,Fe)Sb layer exhibit giant proximity magnetoresistance (PMR)(80% at 14 T).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 1, '%', 1],[61.0, 80, '%', 0],[65.0, 14, 'T', 0]

N
###Giant gate-controlled proximity magnetoresistance in semiconductor-based ferromagnetic/nonmagnetic bilayers|Kosuke Takiguchi,Le Duc Anh,Takahiro Chiba,Tomohiro Koyama,Daichi Chiba,Masaaki Tanaka###
(231656, 231656)
 Here, we demonstrate that NM<missing VAR>/FM<missing VAR>bilayers consisting of a NM<missing VAR> InAs quantum well conductive channel and aninsulating FM<missing VAR> (Ga,Fe)Sb layer exhibit giant proximity magnetoresistance (PMR)(80% at 14 T).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 1, '%', 1],[49.0, 80, '%', 0],[53.0, 14, 'T', 0]

InAs
###Giant gate-controlled proximity magnetoresistance in semiconductor-based ferromagnetic/nonmagnetic bilayers|Kosuke Takiguchi,Le Duc Anh,Takahiro Chiba,Tomohiro Koyama,Daichi Chiba,Masaaki Tanaka###
(231659, 231660)
 Here, we demonstrate that NM<missing VAR>/FM<missing VAR>bilayers consisting of a NM<missing VAR> InAs quantum well conductive channel and aninsulating FM<missing VAR> (Ga,Fe)Sb layer exhibit giant proximity magnetoresistance (PMR)(80% at 14 T).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 1, '%', 1],[45.0, 80, '%', 0],[49.0, 14, 'T', 0]

F
###Giant gate-controlled proximity magnetoresistance in semiconductor-based ferromagnetic/nonmagnetic bilayers|Kosuke Takiguchi,Le Duc Anh,Takahiro Chiba,Tomohiro Koyama,Daichi Chiba,Masaaki Tanaka###
(231677, 231677)
 Here, we demonstrate that NM<missing VAR>/FM<missing VAR>bilayers consisting of a NM<missing VAR> InAs quantum well conductive channel and aninsulating FM<missing VAR> (Ga,Fe)Sb layer exhibit giant proximity magnetoresistance (PMR)(80% at 14 T).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 1, '%', 1],[28.0, 80, '%', 0],[32.0, 14, 'T', 0]

Ga
###Giant gate-controlled proximity magnetoresistance in semiconductor-based ferromagnetic/nonmagnetic bilayers|Kosuke Takiguchi,Le Duc Anh,Takahiro Chiba,Tomohiro Koyama,Daichi Chiba,Masaaki Tanaka###
(231681, 231681)
 Here, we demonstrate that NM<missing VAR>/FM<missing VAR>bilayers consisting of a NM<missing VAR> InAs quantum well conductive channel and aninsulating FM<missing VAR> (Ga,Fe)Sb layer exhibit giant proximity magnetoresistance (PMR)(80% at 14 T).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 1, '%', 1],[24.0, 80, '%', 0],[28.0, 14, 'T', 0]

Fe
###Giant gate-controlled proximity magnetoresistance in semiconductor-based ferromagnetic/nonmagnetic bilayers|Kosuke Takiguchi,Le Duc Anh,Takahiro Chiba,Tomohiro Koyama,Daichi Chiba,Masaaki Tanaka###
(231683, 231683)
 Here, we demonstrate that NM<missing VAR>/FM<missing VAR>bilayers consisting of a NM<missing VAR> InAs quantum well conductive channel and aninsulating FM<missing VAR> (Ga,Fe)Sb layer exhibit giant proximity magnetoresistance (PMR)(80% at 14 T).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 1, '%', 1],[22.0, 80, '%', 0],[26.0, 14, 'T', 0]

Sb
###Giant gate-controlled proximity magnetoresistance in semiconductor-based ferromagnetic/nonmagnetic bilayers|Kosuke Takiguchi,Le Duc Anh,Takahiro Chiba,Tomohiro Koyama,Daichi Chiba,Masaaki Tanaka###
(231685, 231685)
 Here, we demonstrate that NM<missing VAR>/FM<missing VAR>bilayers consisting of a NM<missing VAR> InAs quantum well conductive channel and aninsulating FM<missing VAR> (Ga,Fe)Sb layer exhibit giant proximity magnetoresistance (PMR)(80% at 14 T).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 1, '%', 1],[20.0, 80, '%', 0],[24.0, 14, 'T', 0]

P
###Giant gate-controlled proximity magnetoresistance in semiconductor-based ferromagnetic/nonmagnetic bilayers|Kosuke Takiguchi,Le Duc Anh,Takahiro Chiba,Tomohiro Koyama,Daichi Chiba,Masaaki Tanaka###
(231698, 231698)
 Here, we demonstrate that NM<missing VAR>/FM<missing VAR>bilayers consisting of a NM<missing VAR> InAs quantum well conductive channel and aninsulating FM<missing VAR> (Ga,Fe)Sb layer exhibit giant proximity magnetoresistance (PMR)(80% at 14 T).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 1, '%', 1],[7.0, 80, '%', 0],[11.0, 14, 'T', 0]

P
###Giant gate-controlled proximity magnetoresistance in semiconductor-based ferromagnetic/nonmagnetic bilayers|Kosuke Takiguchi,Le Duc Anh,Takahiro Chiba,Tomohiro Koyama,Daichi Chiba,Masaaki Tanaka###
(231715, 231715)
 This PMR is two orders of magnitude larger than the MR observedin NM<missing VAR>/FM<missing VAR> bilayers reported to date, and its magnitude can be controlled by agate voltage.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 1, '%', 2],[10.0, 80, '%', 1],[6.0, 14, 'T', 1]

N
###Giant gate-controlled proximity magnetoresistance in semiconductor-based ferromagnetic/nonmagnetic bilayers|Kosuke Takiguchi,Le Duc Anh,Takahiro Chiba,Tomohiro Koyama,Daichi Chiba,Masaaki Tanaka###
(231743, 231743)
 This PMR is two orders of magnitude larger than the MR observedin NM<missing VAR>/FM<missing VAR> bilayers reported to date, and its magnitude can be controlled by agate voltage.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 1, '%', 2],[38.0, 80, '%', 1],[34.0, 14, 'T', 1]

F
###Giant gate-controlled proximity magnetoresistance in semiconductor-based ferromagnetic/nonmagnetic bilayers|Kosuke Takiguchi,Le Duc Anh,Takahiro Chiba,Tomohiro Koyama,Daichi Chiba,Masaaki Tanaka###
(231746, 231746)
 This PMR is two orders of magnitude larger than the MR observedin NM<missing VAR>/FM<missing VAR> bilayers reported to date, and its magnitude can be controlled by agate voltage.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 1, '%', 2],[41.0, 80, '%', 1],[37.0, 14, 'T', 1]

InAs
###Giant gate-controlled proximity magnetoresistance in semiconductor-based ferromagnetic/nonmagnetic bilayers|Kosuke Takiguchi,Le Duc Anh,Takahiro Chiba,Tomohiro Koyama,Daichi Chiba,Masaaki Tanaka###
(231798, 231799)
 These results are explained by the penetration of the InAstwo-dimensional-electron wavefunction into (Ga,Fe)Sb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[171.0, 1, '%', 3],[93.0, 80, '%', 2],[89.0, 14, 'T', 2]

Ga
###Giant gate-controlled proximity magnetoresistance in semiconductor-based ferromagnetic/nonmagnetic bilayers|Kosuke Takiguchi,Le Duc Anh,Takahiro Chiba,Tomohiro Koyama,Daichi Chiba,Masaaki Tanaka###
(231813, 231813)
 These results are explained by the penetration of the InAstwo-dimensional-electron wavefunction into (Ga,Fe)Sb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, 1, '%', 3],[108.0, 80, '%', 2],[104.0, 14, 'T', 2]

Fe
###Giant gate-controlled proximity magnetoresistance in semiconductor-based ferromagnetic/nonmagnetic bilayers|Kosuke Takiguchi,Le Duc Anh,Takahiro Chiba,Tomohiro Koyama,Daichi Chiba,Masaaki Tanaka###
(231815, 231815)
 These results are explained by the penetration of the InAstwo-dimensional-electron wavefunction into (Ga,Fe)Sb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 1, '%', 3],[110.0, 80, '%', 2],[106.0, 14, 'T', 2]

Sb
###Giant gate-controlled proximity magnetoresistance in semiconductor-based ferromagnetic/nonmagnetic bilayers|Kosuke Takiguchi,Le Duc Anh,Takahiro Chiba,Tomohiro Koyama,Daichi Chiba,Masaaki Tanaka###
(231817, 231817)
 These results are explained by the penetration of the InAstwo-dimensional-electron wavefunction into (Ga,Fe)Sb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[190.0, 1, '%', 3],[112.0, 80, '%', 2],[108.0, 14, 'T', 2]

N
###Giant gate-controlled proximity magnetoresistance in semiconductor-based ferromagnetic/nonmagnetic bilayers|Kosuke Takiguchi,Le Duc Anh,Takahiro Chiba,Tomohiro Koyama,Daichi Chiba,Masaaki Tanaka###
(231833, 231833)
 The ability to stronglymodulate the NM<missing VAR> channel current by both electrical and magnetic gatingrepresents a new concept of magnetic-gating spin transistors.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[206.0, 1, '%', 4],[128.0, 80, '%', 3],[124.0, 14, 'T', 3]

SiC
###Thermal transport driven by charge imbalance in graphene in magnetic field, close to the charge neutrality point at low temperature: Non local resistance|A. Tagliacozzo,G. Campagnano,D. Giuliano,P. Lucignano,B. Jouault###
(231936, 231937)
 Graphene grown epitaxially on SiC, close to the charge neutrality point(CNP), in an orthogonal magnetic field shows an ambipolar behavior of thetransverse resistance accompanied by a puzzling longitudinal magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(CNP)
###Thermal transport driven by charge imbalance in graphene in magnetic field, close to the charge neutrality point at low temperature: Non local resistance|A. Tagliacozzo,G. Campagnano,D. Giuliano,P. Lucignano,B. Jouault###
(231953, 231957)
 Graphene grown epitaxially on SiC, close to the charge neutrality point(CNP), in an orthogonal magnetic field shows an ambipolar behavior of thetransverse resistance accompanied by a puzzling longitudinal magnetoresistance.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Thermal transport driven by charge imbalance in graphene in magnetic field, close to the charge neutrality point at low temperature: Non local resistance|A. Tagliacozzo,G. Campagnano,D. Giuliano,P. Lucignano,B. Jouault###
(232151, 232151)
 As a possiblecontribution to the explanation of the measured non local magnetoresistancewhich is odd in the magnetic field, we derive a hydrodynamic approach totransport in this system, which involves particle and hole Dirac carriers, inthe form of charge and energy currents.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Thermal transport driven by charge imbalance in graphene in magnetic field, close to the charge neutrality point at low temperature: Non local resistance|A. Tagliacozzo,G. Campagnano,D. Giuliano,P. Lucignano,B. Jouault###
(232346, 232346)
 Inpresence of the local source, some leakage of carriers from the edges generatesan imbalance of carriers of opposite sign, which are separated in space by themagnetic field and diffuse along the Hall bar generating a non local transversevoltage.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnPS3
###Spin-flop transition in atomically thin MnPS$_3$ crystals|Gen Long,Hugo Henck,Marco Gibertini,Dumitru Dumcenco,Zhe Wang,Takashi Taniguchi,Kenji Watanabe,Enrico Giannini,Alberto F. Morpurgo###
(232605, 232608)
Spin-flop transition in atomically thin MnPS3 crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0.6,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[498.0, 2, 'D', 8]

CrI3
###Spin-flop transition in atomically thin MnPS$_3$ crystals|Gen Long,Hugo Henck,Marco Gibertini,Dumitru Dumcenco,Zhe Wang,Takashi Taniguchi,Kenji Watanabe,Enrico Giannini,Alberto F. Morpurgo###
(232636, 232638)
 The magnetic state of atomically thin semiconducting layered antiferromagnetssuch as CrI3 and CrCl3 can be probed by forming tunnel barriers andmeasuring their resistance as a function of magnetic field (H) andtemperature (T).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[468.0, 2, 'D', 7]

CrCl3
###Spin-flop transition in atomically thin MnPS$_3$ crystals|Gen Long,Hugo Henck,Marco Gibertini,Dumitru Dumcenco,Zhe Wang,Takashi Taniguchi,Kenji Watanabe,Enrico Giannini,Alberto F. Morpurgo###
(232642, 232644)
 The magnetic state of atomically thin semiconducting layered antiferromagnetssuch as CrI3 and CrCl3 can be probed by forming tunnel barriers andmeasuring their resistance as a function of magnetic field (H) andtemperature (T).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[462.0, 2, 'D', 7]

(H)
###Spin-flop transition in atomically thin MnPS$_3$ crystals|Gen Long,Hugo Henck,Marco Gibertini,Dumitru Dumcenco,Zhe Wang,Takashi Taniguchi,Kenji Watanabe,Enrico Giannini,Alberto F. Morpurgo###
(232681, 232683)
 The magnetic state of atomically thin semiconducting layered antiferromagnetssuch as CrI3 and CrCl3 can be probed by forming tunnel barriers andmeasuring their resistance as a function of magnetic field (H) andtemperature (T).
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[423.0, 2, 'D', 7]

MnPS3
###Spin-flop transition in atomically thin MnPS$_3$ crystals|Gen Long,Hugo Henck,Marco Gibertini,Dumitru Dumcenco,Zhe Wang,Takashi Taniguchi,Kenji Watanabe,Enrico Giannini,Alberto F. Morpurgo###
(232847, 232850)
 To address this issue, we investigate tunnel transportthrough atomically thin crystals of MnPS3, a van der Waals semiconductorthat in the bulk exhibits easy-axis antiferromagnetic order within the layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0.6,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[256.0, 2, 'D', 3]

K
###Spin-flop transition in atomically thin MnPS$_3$ crystals|Gen Long,Hugo Henck,Marco Gibertini,Dumitru Dumcenco,Zhe Wang,Takashi Taniguchi,Kenji Watanabe,Enrico Giannini,Alberto F. Morpurgo###
(232903, 232903)
For thick multilayers below T<missing VAR>simeq 78 K, a T<missing VAR>-dependent magnetoresistancesets-in at sim 5 T<missing VAR>, and is found to track the boundary between theantiferromagnetic and the spin-flop phases known from bulk magnetizationmeasurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[203.0, 2, 'D', 2]

MnPS3
###Spin-flop transition in atomically thin MnPS$_3$ crystals|Gen Long,Hugo Henck,Marco Gibertini,Dumitru Dumcenco,Zhe Wang,Takashi Taniguchi,Kenji Watanabe,Enrico Giannini,Alberto F. Morpurgo###
(232983, 232986)
 The magnetoresistance persists down to individual MnPS3monolayers with nearly unchanged characteristic temperature and magnetic fieldscales, albeit with a different dependence on H.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0.6,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 2, 'D', 1]

H
###Spin-flop transition in atomically thin MnPS$_3$ crystals|Gen Long,Hugo Henck,Marco Gibertini,Dumitru Dumcenco,Zhe Wang,Takashi Taniguchi,Kenji Watanabe,Enrico Giannini,Alberto F. Morpurgo###
(233023, 233023)
 The magnetoresistance persists down to individual MnPS3monolayers with nearly unchanged characteristic temperature and magnetic fieldscales, albeit with a different dependence on H.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 2, 'D', 1]

MnPS3
###Spin-flop transition in atomically thin MnPS$_3$ crystals|Gen Long,Hugo Henck,Marco Gibertini,Dumitru Dumcenco,Zhe Wang,Takashi Taniguchi,Kenji Watanabe,Enrico Giannini,Alberto F. Morpurgo###
(233055, 233058)
 We discuss the implicationsof these finding for the magnetic state of atomically thin MnPS3 crystals,conclude that antiferromagnetic correlations persist down to the level ofindividual monolayers, and that tunneling magnetoresistance does allowmagnetism in 2D insulating materials to be detected even in the absence ofspin-filtering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0.6,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 2, 'D', 0]

CISS
###Reply to "Comment on 'Spin-dependent electron transmission model for chiral molecules in mesoscopic devices'"|Xu Yang,Caspar H. van der Wal,Bart J. van Wees###
(233191, 233194)
 Here we emphasize once more the distinction between generating CISS(spin-charge current conversion) in a chiral system and detecting it asmagnetoresistance in two-terminal electronic devices.
Featurization terminated normally.
0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Absence of Spin Hall Magnetoresistance in Pt/(CoNi)n multilayers|Yongwei Cui,Xiaoyu Feng,Qihan Zhang,Hengan Zhou,Wanjun Jiang,Jiangwei Cao,Desheng Xue,Xiaolong Fan###
(233304, 233304)
Absence of Spin Hall Magnetoresistance in Pt/(CoNi)n<missing VAR> multilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[259.0, 0.07, 'for', 4]

(CoNi)
###Absence of Spin Hall Magnetoresistance in Pt/(CoNi)n multilayers|Yongwei Cui,Xiaoyu Feng,Qihan Zhang,Hengan Zhou,Wanjun Jiang,Jiangwei Cao,Desheng Xue,Xiaolong Fan###
(233306, 233309)
Absence of Spin Hall Magnetoresistance in Pt/(CoNi)n<missing VAR> multilayers.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[254.0, 0.07, 'for', 4]

Pt
###Absence of Spin Hall Magnetoresistance in Pt/(CoNi)n multilayers|Yongwei Cui,Xiaoyu Feng,Qihan Zhang,Hengan Zhou,Wanjun Jiang,Jiangwei Cao,Desheng Xue,Xiaolong Fan###
(233331, 233331)
 We systematically studied the magnetoresistance effect in a Pt/(CoNi)n<missing VAR>multilayer system with perpendicular magnetic anisotropy and the fcc (111)texture.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[232.0, 0.07, 'for', 3]

(CoNi)
###Absence of Spin Hall Magnetoresistance in Pt/(CoNi)n multilayers|Yongwei Cui,Xiaoyu Feng,Qihan Zhang,Hengan Zhou,Wanjun Jiang,Jiangwei Cao,Desheng Xue,Xiaolong Fan###
(233333, 233336)
 We systematically studied the magnetoresistance effect in a Pt/(CoNi)n<missing VAR>multilayer system with perpendicular magnetic anisotropy and the fcc (111)texture.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[227.0, 0.07, 'for', 3]

S
###Absence of Spin Hall Magnetoresistance in Pt/(CoNi)n multilayers|Yongwei Cui,Xiaoyu Feng,Qihan Zhang,Hengan Zhou,Wanjun Jiang,Jiangwei Cao,Desheng Xue,Xiaolong Fan###
(233512, 233512)
Based on the accuracy of our experimental results, the magnitude of spin Hallmagnetoresistance (SMR) in Pt/(CoNi)n<missing VAR> was expected to be below1times10-4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 0.07, 'for', 1]

Pt
###Absence of Spin Hall Magnetoresistance in Pt/(CoNi)n multilayers|Yongwei Cui,Xiaoyu Feng,Qihan Zhang,Hengan Zhou,Wanjun Jiang,Jiangwei Cao,Desheng Xue,Xiaolong Fan###
(233519, 233519)
Based on the accuracy of our experimental results, the magnitude of spin Hallmagnetoresistance (SMR) in Pt/(CoNi)n<missing VAR> was expected to be below1times10-4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 0.07, 'for', 1]

(CoNi)
###Absence of Spin Hall Magnetoresistance in Pt/(CoNi)n multilayers|Yongwei Cui,Xiaoyu Feng,Qihan Zhang,Hengan Zhou,Wanjun Jiang,Jiangwei Cao,Desheng Xue,Xiaolong Fan###
(233521, 233524)
Based on the accuracy of our experimental results, the magnitude of spin Hallmagnetoresistance (SMR) in Pt/(CoNi)n<missing VAR> was expected to be below1times10-4.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 0.07, 'for', 1]

Pt
###Absence of Spin Hall Magnetoresistance in Pt/(CoNi)n multilayers|Yongwei Cui,Xiaoyu Feng,Qihan Zhang,Hengan Zhou,Wanjun Jiang,Jiangwei Cao,Desheng Xue,Xiaolong Fan###
(233566, 233566)
 However, on evaluating the spin Hall angle of geq 0.07 forPt using spin-torque ferromagnetic resonance measurements, the theoreticalmagnitude of SMR in our samples was estimated to exceed 7times10-4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 0.07, 'for', 0]

S
###Absence of Spin Hall Magnetoresistance in Pt/(CoNi)n multilayers|Yongwei Cui,Xiaoyu Feng,Qihan Zhang,Hengan Zhou,Wanjun Jiang,Jiangwei Cao,Desheng Xue,Xiaolong Fan###
(233590, 233590)
 However, on evaluating the spin Hall angle of geq 0.07 forPt using spin-torque ferromagnetic resonance measurements, the theoreticalmagnitude of SMR in our samples was estimated to exceed 7times10-4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 0.07, 'for', 0]

S
###Absence of Spin Hall Magnetoresistance in Pt/(CoNi)n multilayers|Yongwei Cui,Xiaoyu Feng,Qihan Zhang,Hengan Zhou,Wanjun Jiang,Jiangwei Cao,Desheng Xue,Xiaolong Fan###
(233622, 233622)
 Thisabsence of SMR in the experimental results can be explained by theElliott-Yafet spin relaxation of itinerant electrons in the ferromagneticmetal, which indicates that the boundary conditions of the spin current in theheavy metal/ferromagnetic insulator may not be applicable to all-metallicheterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 0.07, 'for', 1]

ErBi
###Anisotropic and extreme magnetoresistance in the magnetic semimetal candidate Erbium monobismuthide|L. - Y. Fan,F. Tang,W. Z. Meng,W. Zhao,L. Zhang,Z. D. Han,B. Qian,X. -F. Jiang,X. M. Zhang,Y. Fang###
(233797, 233798)
 Here, we grow ErBisingle crystal and study its magnetic, thermal and electrical properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 104, '%', 2]

ErBi
###Anisotropic and extreme magnetoresistance in the magnetic semimetal candidate Erbium monobismuthide|L. - Y. Fan,F. Tang,W. Z. Meng,W. Zhao,L. Zhang,Z. D. Han,B. Qian,X. -F. Jiang,X. M. Zhang,Y. Fang###
(233855, 233856)
 Ananalysis of the magnetic entropy and magnetization indicates that the weakmagnetic anisotropy in ErBi possibly derives from the mixing effect, namely theanisotropic ground state of Er3 (4f<missing VAR>11) mingles with the isotropic excitedstate through exchange interaction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 104, '%', 1]

Er3
###Anisotropic and extreme magnetoresistance in the magnetic semimetal candidate Erbium monobismuthide|L. - Y. Fan,F. Tang,W. Z. Meng,W. Zhao,L. Zhang,Z. D. Han,B. Qian,X. -F. Jiang,X. M. Zhang,Y. Fang###
(233884, 233885)
 Ananalysis of the magnetic entropy and magnetization indicates that the weakmagnetic anisotropy in ErBi possibly derives from the mixing effect, namely theanisotropic ground state of Er3 (4f<missing VAR>11) mingles with the isotropic excitedstate through exchange interaction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 104, '%', 1]

At
###Anisotropic and extreme magnetoresistance in the magnetic semimetal candidate Erbium monobismuthide|L. - Y. Fan,F. Tang,W. Z. Meng,W. Zhao,L. Zhang,Z. D. Han,B. Qian,X. -F. Jiang,X. M. Zhang,Y. Fang###
(233913, 233913)
 At low temperature, an extremely largemagnetoresistance (104%) with a parabolic magnetic-field dependence isobserved, which can be ascribed to the nearly perfect electron-holecompensation and ultrahigh carrier mobility.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 104, '%', 0]

ErBi
###Anisotropic and extreme magnetoresistance in the magnetic semimetal candidate Erbium monobismuthide|L. - Y. Fan,F. Tang,W. Z. Meng,W. Zhao,L. Zhang,Z. D. Han,B. Qian,X. -F. Jiang,X. M. Zhang,Y. Fang###
(234035, 234036)
 When the magnetic field is rotatedin the ab (ac) plane and the current flows in the b<missing VAR> axis, the angularmagnetoresistance in ErBi shows a twofold (fourfold) symmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 104, '%', 1]

LaBi
###Anisotropic and extreme magnetoresistance in the magnetic semimetal candidate Erbium monobismuthide|L. - Y. Fan,F. Tang,W. Z. Meng,W. Zhao,L. Zhang,Z. D. Han,B. Qian,X. -F. Jiang,X. M. Zhang,Y. Fang###
(234064, 234065)
 Similar case hasbeen observed in LaBi where the anisotropic Fermi surface dominates thelow-temperature transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 104, '%', 2]

ErBi
###Anisotropic and extreme magnetoresistance in the magnetic semimetal candidate Erbium monobismuthide|L. - Y. Fan,F. Tang,W. Z. Meng,W. Zhao,L. Zhang,Z. D. Han,B. Qian,X. -F. Jiang,X. M. Zhang,Y. Fang###
(234108, 234109)
 Our theoretical calculation suggests that near theFermi level ErBi shares similarity with LaBi in the electronic band structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 104, '%', 3]

LaBi
###Anisotropic and extreme magnetoresistance in the magnetic semimetal candidate Erbium monobismuthide|L. - Y. Fan,F. Tang,W. Z. Meng,W. Zhao,L. Zhang,Z. D. Han,B. Qian,X. -F. Jiang,X. M. Zhang,Y. Fang###
(234117, 234118)
 Our theoretical calculation suggests that near theFermi level ErBi shares similarity with LaBi in the electronic band structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[187.0, 104, '%', 3]

ErBi
###Anisotropic and extreme magnetoresistance in the magnetic semimetal candidate Erbium monobismuthide|L. - Y. Fan,F. Tang,W. Z. Meng,W. Zhao,L. Zhang,Z. D. Han,B. Qian,X. -F. Jiang,X. M. Zhang,Y. Fang###
(234148, 234149)
These findings indicate that the angular magnetoresistance of ErBi could bemainly determined by its anisotropic Fermi surface topology.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[218.0, 104, '%', 4]

ErBi
###Anisotropic and extreme magnetoresistance in the magnetic semimetal candidate Erbium monobismuthide|L. - Y. Fan,F. Tang,W. Z. Meng,W. Zhao,L. Zhang,Z. D. Han,B. Qian,X. -F. Jiang,X. M. Zhang,Y. Fang###
(234224, 234225)
 Besides,contributions from several other possibilities, including the spin-dependentscattering, spin-orbit scattering, and demagnetization correlation to theangular magnetoresistance of ErBi are also discussed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[294.0, 104, '%', 5]

LaRu2P2
###Large magnetoresistance in the iron-free pnictide superconductor LaRu$_2$P$_2$|Marta Fernández-Lomana,Víctor Barrena,Beilun Wu,Sara Delgado,Federico Mompeán,Mar García-Hernández,Hermann Suderow,Isabel Guillamón###
(234258, 234262)
Large magnetoresistance in the iron-free pnictide superconductor LaRu2P2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 4, 'K', 2],[189.0, 22, 'T', 4],[251.0, 3, 'D', 6]

H2
###Large magnetoresistance in the iron-free pnictide superconductor LaRu$_2$P$_2$|Marta Fernández-Lomana,Víctor Barrena,Beilun Wu,Sara Delgado,Federico Mompeán,Mar García-Hernández,Hermann Suderow,Isabel Guillamón###
(234300, 234301)
 The magnetoresistance of iron pnictide superconductors is often dominated byelectron-electron correlations and deviates from the H2 or saturatingbehaviors expected for uncorrelated metals.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 4, 'K', 1],[150.0, 22, 'T', 3],[212.0, 3, 'D', 5]

Fe
###Large magnetoresistance in the iron-free pnictide superconductor LaRu$_2$P$_2$|Marta Fernández-Lomana,Víctor Barrena,Beilun Wu,Sara Delgado,Federico Mompeán,Mar García-Hernández,Hermann Suderow,Isabel Guillamón###
(234325, 234325)
 Contrary to similar Fe-basedpnictide systems, the superconductor LaRu2P2 (Tc  4 K) shows noenhancement of electron-electron correlations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 4, 'K', 0],[126.0, 22, 'T', 2],[188.0, 3, 'D', 4]

LaRu2P2
###Large magnetoresistance in the iron-free pnictide superconductor LaRu$_2$P$_2$|Marta Fernández-Lomana,Víctor Barrena,Beilun Wu,Sara Delgado,Federico Mompeán,Mar García-Hernández,Hermann Suderow,Isabel Guillamón###
(234339, 234343)
 Contrary to similar Fe-basedpnictide systems, the superconductor LaRu2P2 (Tc  4 K) shows noenhancement of electron-electron correlations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 4, 'K', 0],[108.0, 22, 'T', 2],[170.0, 3, 'D', 4]

H2
###Large magnetoresistance in the iron-free pnictide superconductor LaRu$_2$P$_2$|Marta Fernández-Lomana,Víctor Barrena,Beilun Wu,Sara Delgado,Federico Mompeán,Mar García-Hernández,Hermann Suderow,Isabel Guillamón###
(234389, 234390)
 Here we report a non-saturatingmagnetoresistance deviating from the H2 or saturating behaviors inLaRu2P2.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 4, 'K', 1],[61.0, 22, 'T', 1],[123.0, 3, 'D', 3]

LaRu2P2
###Large magnetoresistance in the iron-free pnictide superconductor LaRu$_2$P$_2$|Marta Fernández-Lomana,Víctor Barrena,Beilun Wu,Sara Delgado,Federico Mompeán,Mar García-Hernández,Hermann Suderow,Isabel Guillamón###
(234401, 234405)
 Here we report a non-saturatingmagnetoresistance deviating from the H2 or saturating behaviors inLaRu2P2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 4, 'K', 1],[46.0, 22, 'T', 1],[108.0, 3, 'D', 3]

LaRu2P2
###Large magnetoresistance in the iron-free pnictide superconductor LaRu$_2$P$_2$|Marta Fernández-Lomana,Víctor Barrena,Beilun Wu,Sara Delgado,Federico Mompeán,Mar García-Hernández,Hermann Suderow,Isabel Guillamón###
(234429, 234433)
 We have grown and characterized high quality single crystals ofLaRu2P2 and measured a magnetoresistance following H1.3 up to 22 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 4, 'K', 2],[18.0, 22, 'T', 0],[80.0, 3, 'D', 2]

H1.3
###Large magnetoresistance in the iron-free pnictide superconductor LaRu$_2$P$_2$|Marta Fernández-Lomana,Víctor Barrena,Beilun Wu,Sara Delgado,Federico Mompeán,Mar García-Hernández,Hermann Suderow,Isabel Guillamón###
(234445, 234446)
 We have grown and characterized high quality single crystals ofLaRu2P2 and measured a magnetoresistance following H1.3 up to 22 T.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 4, 'K', 2],[5.0, 22, 'T', 0],[67.0, 3, 'D', 2]

LaRu2P2
###Large magnetoresistance in the iron-free pnictide superconductor LaRu$_2$P$_2$|Marta Fernández-Lomana,Víctor Barrena,Beilun Wu,Sara Delgado,Federico Mompeán,Mar García-Hernández,Hermann Suderow,Isabel Guillamón###
(234473, 234477)
We discuss our result by comparing the bandstructure of LaRu2P2 with Febased pnictide superconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 4, 'K', 3],[22.0, 22, 'T', 1],[36.0, 3, 'D', 1]

Fe
###Large magnetoresistance in the iron-free pnictide superconductor LaRu$_2$P$_2$|Marta Fernández-Lomana,Víctor Barrena,Beilun Wu,Sara Delgado,Federico Mompeán,Mar García-Hernández,Hermann Suderow,Isabel Guillamón###
(234481, 234481)
We discuss our result by comparing the bandstructure of LaRu2P2 with Febased pnictide superconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 4, 'K', 3],[30.0, 22, 'T', 1],[32.0, 3, 'D', 1]

Fe
###Large magnetoresistance in the iron-free pnictide superconductor LaRu$_2$P$_2$|Marta Fernández-Lomana,Víctor Barrena,Beilun Wu,Sara Delgado,Federico Mompeán,Mar García-Hernández,Hermann Suderow,Isabel Guillamón###
(234501, 234501)
 The different orbital structures of Fe and Ruleads to a 3D Fermi surface with negligible bandwidth renormalization inLaRu2P2, that contains a large open sheet over the whole Brillouin zone.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 4, 'K', 4],[50.0, 22, 'T', 2],[12.0, 3, 'D', 0]

Ru
###Large magnetoresistance in the iron-free pnictide superconductor LaRu$_2$P$_2$|Marta Fernández-Lomana,Víctor Barrena,Beilun Wu,Sara Delgado,Federico Mompeán,Mar García-Hernández,Hermann Suderow,Isabel Guillamón###
(234505, 234505)
 The different orbital structures of Fe and Ruleads to a 3D Fermi surface with negligible bandwidth renormalization inLaRu2P2, that contains a large open sheet over the whole Brillouin zone.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 4, 'K', 4],[54.0, 22, 'T', 2],[8.0, 3, 'D', 0]

LaRu2P2
###Large magnetoresistance in the iron-free pnictide superconductor LaRu$_2$P$_2$|Marta Fernández-Lomana,Víctor Barrena,Beilun Wu,Sara Delgado,Federico Mompeán,Mar García-Hernández,Hermann Suderow,Isabel Guillamón###
(234530, 234534)
 The different orbital structures of Fe and Ruleads to a 3D Fermi surface with negligible bandwidth renormalization inLaRu2P2, that contains a large open sheet over the whole Brillouin zone.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 4, 'K', 4],[79.0, 22, 'T', 2],[17.0, 3, 'D', 0]

LaRu2P2
###Large magnetoresistance in the iron-free pnictide superconductor LaRu$_2$P$_2$|Marta Fernández-Lomana,Víctor Barrena,Beilun Wu,Sara Delgado,Federico Mompeán,Mar García-Hernández,Hermann Suderow,Isabel Guillamón###
(234575, 234579)
We show that the large magnetoresistance in LaRu2P2 is unrelated to theone obtained in materials with strong electron-electron correlations and thatit is compatible instead with conduction due to open orbits on the rathercomplex Fermi surface structure of LaRu2P2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[226.0, 4, 'K', 5],[124.0, 22, 'T', 3],[62.0, 3, 'D', 1]

LaRu2P2
###Large magnetoresistance in the iron-free pnictide superconductor LaRu$_2$P$_2$|Marta Fernández-Lomana,Víctor Barrena,Beilun Wu,Sara Delgado,Federico Mompeán,Mar García-Hernández,Hermann Suderow,Isabel Guillamón###
(234650, 234654)
We show that the large magnetoresistance in LaRu2P2 is unrelated to theone obtained in materials with strong electron-electron correlations and thatit is compatible instead with conduction due to open orbits on the rathercomplex Fermi surface structure of LaRu2P2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[301.0, 4, 'K', 5],[199.0, 22, 'T', 3],[137.0, 3, 'D', 1]

Pt/Y3Fe5O12
###Static magnetic proximity effects and spin Hall magnetoresistance in Pt/Y$_{3}$Fe$_{5}$O$_{12}$ and inverted Y$_{3}$Fe$_{5}$O$_{12}$/Pt bilayers|Stephan Geprägs,Christoph Klewe,Sibylle Meyer,Dominik Graulich,Felix Schade,Marc Schneider,Sonia Francoual,Stephen P. Collins,Katharina Ollefs,Fabrice Wilhelm,Andrei Rogalev,Yves Joly,Sebastian T. B. Goennenwein,Matthias Opel,Timo Kuschel,Rudolf Gross###
(234683, 234690)
Static magnetic proximity effects and spin Hall magnetoresistance in Pt/Y3Fe5O12 and inverted Y3Fe5O12/Pt bilayers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Y3Fe5O12/Pt
###Static magnetic proximity effects and spin Hall magnetoresistance in Pt/Y$_{3}$Fe$_{5}$O$_{12}$ and inverted Y$_{3}$Fe$_{5}$O$_{12}$/Pt bilayers|Stephan Geprägs,Christoph Klewe,Sibylle Meyer,Dominik Graulich,Felix Schade,Marc Schneider,Sonia Francoual,Stephen P. Collins,Katharina Ollefs,Fabrice Wilhelm,Andrei Rogalev,Yves Joly,Sebastian T. B. Goennenwein,Matthias Opel,Timo Kuschel,Rudolf Gross###
(234696, 234703)
Static magnetic proximity effects and spin Hall magnetoresistance in Pt/Y3Fe5O12 and inverted Y3Fe5O12/Pt bilayers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Pt
###Static magnetic proximity effects and spin Hall magnetoresistance in Pt/Y$_{3}$Fe$_{5}$O$_{12}$ and inverted Y$_{3}$Fe$_{5}$O$_{12}$/Pt bilayers|Stephan Geprägs,Christoph Klewe,Sibylle Meyer,Dominik Graulich,Felix Schade,Marc Schneider,Sonia Francoual,Stephen P. Collins,Katharina Ollefs,Fabrice Wilhelm,Andrei Rogalev,Yves Joly,Sebastian T. B. Goennenwein,Matthias Opel,Timo Kuschel,Rudolf Gross###
(234720, 234720)
 The magnetic state of heavy metal Pt thin films in proximity to theferrimagnetic insulator Y3Fe5O12 has been investigatedsystematically by means of x<missing VAR>-ray magnetic circular dichroism and x<missing VAR>-ray resonantmagnetic reflectivity measurements combined with angle-dependentmagnetotransport studies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Y3Fe5O12
###Static magnetic proximity effects and spin Hall magnetoresistance in Pt/Y$_{3}$Fe$_{5}$O$_{12}$ and inverted Y$_{3}$Fe$_{5}$O$_{12}$/Pt bilayers|Stephan Geprägs,Christoph Klewe,Sibylle Meyer,Dominik Graulich,Felix Schade,Marc Schneider,Sonia Francoual,Stephen P. Collins,Katharina Ollefs,Fabrice Wilhelm,Andrei Rogalev,Yves Joly,Sebastian T. B. Goennenwein,Matthias Opel,Timo Kuschel,Rudolf Gross###
(234739, 234744)
 The magnetic state of heavy metal Pt thin films in proximity to theferrimagnetic insulator Y3Fe5O12 has been investigatedsystematically by means of x<missing VAR>-ray magnetic circular dichroism and x<missing VAR>-ray resonantmagnetic reflectivity measurements combined with angle-dependentmagnetotransport studies.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Static magnetic proximity effects and spin Hall magnetoresistance in Pt/Y$_{3}$Fe$_{5}$O$_{12}$ and inverted Y$_{3}$Fe$_{5}$O$_{12}$/Pt bilayers|Stephan Geprägs,Christoph Klewe,Sibylle Meyer,Dominik Graulich,Felix Schade,Marc Schneider,Sonia Francoual,Stephen P. Collins,Katharina Ollefs,Fabrice Wilhelm,Andrei Rogalev,Yves Joly,Sebastian T. B. Goennenwein,Matthias Opel,Timo Kuschel,Rudolf Gross###
(234827, 234827)
 To reveal intermixing effects as the possible causefor induced magnetic moments in Pt, we compare thin film heterostructures withdifferent order of the layer stacking and different interface properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Static magnetic proximity effects and spin Hall magnetoresistance in Pt/Y$_{3}$Fe$_{5}$O$_{12}$ and inverted Y$_{3}$Fe$_{5}$O$_{12}$/Pt bilayers|Stephan Geprägs,Christoph Klewe,Sibylle Meyer,Dominik Graulich,Felix Schade,Marc Schneider,Sonia Francoual,Stephen P. Collins,Katharina Ollefs,Fabrice Wilhelm,Andrei Rogalev,Yves Joly,Sebastian T. B. Goennenwein,Matthias Opel,Timo Kuschel,Rudolf Gross###
(234869, 234869)
 Forstandard Pt layers on Y3Fe5O12 thin films, we do not detect anystatic magnetic polarization in Pt.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Y3Fe5O12
###Static magnetic proximity effects and spin Hall magnetoresistance in Pt/Y$_{3}$Fe$_{5}$O$_{12}$ and inverted Y$_{3}$Fe$_{5}$O$_{12}$/Pt bilayers|Stephan Geprägs,Christoph Klewe,Sibylle Meyer,Dominik Graulich,Felix Schade,Marc Schneider,Sonia Francoual,Stephen P. Collins,Katharina Ollefs,Fabrice Wilhelm,Andrei Rogalev,Yves Joly,Sebastian T. B. Goennenwein,Matthias Opel,Timo Kuschel,Rudolf Gross###
(234875, 234880)
 Forstandard Pt layers on Y3Fe5O12 thin films, we do not detect anystatic magnetic polarization in Pt.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Static magnetic proximity effects and spin Hall magnetoresistance in Pt/Y$_{3}$Fe$_{5}$O$_{12}$ and inverted Y$_{3}$Fe$_{5}$O$_{12}$/Pt bilayers|Stephan Geprägs,Christoph Klewe,Sibylle Meyer,Dominik Graulich,Felix Schade,Marc Schneider,Sonia Francoual,Stephen P. Collins,Katharina Ollefs,Fabrice Wilhelm,Andrei Rogalev,Yves Joly,Sebastian T. B. Goennenwein,Matthias Opel,Timo Kuschel,Rudolf Gross###
(234906, 234906)
 Forstandard Pt layers on Y3Fe5O12 thin films, we do not detect anystatic magnetic polarization in Pt.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Static magnetic proximity effects and spin Hall magnetoresistance in Pt/Y$_{3}$Fe$_{5}$O$_{12}$ and inverted Y$_{3}$Fe$_{5}$O$_{12}$/Pt bilayers|Stephan Geprägs,Christoph Klewe,Sibylle Meyer,Dominik Graulich,Felix Schade,Marc Schneider,Sonia Francoual,Stephen P. Collins,Katharina Ollefs,Fabrice Wilhelm,Andrei Rogalev,Yves Joly,Sebastian T. B. Goennenwein,Matthias Opel,Timo Kuschel,Rudolf Gross###
(234947, 234947)
 In contrast, for the inverted layer sequence,Y3Fe5O12 thin films grown on Pt layers, Pt displays a finiteinduced magnetic moment comparable to that of all-metallic Pt/Fe bilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Y3Fe5O12
###Static magnetic proximity effects and spin Hall magnetoresistance in Pt/Y$_{3}$Fe$_{5}$O$_{12}$ and inverted Y$_{3}$Fe$_{5}$O$_{12}$/Pt bilayers|Stephan Geprägs,Christoph Klewe,Sibylle Meyer,Dominik Graulich,Felix Schade,Marc Schneider,Sonia Francoual,Stephen P. Collins,Katharina Ollefs,Fabrice Wilhelm,Andrei Rogalev,Yves Joly,Sebastian T. B. Goennenwein,Matthias Opel,Timo Kuschel,Rudolf Gross###
(234964, 234969)
 In contrast, for the inverted layer sequence,Y3Fe5O12 thin films grown on Pt layers, Pt displays a finiteinduced magnetic moment comparable to that of all-metallic Pt/Fe bilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Static magnetic proximity effects and spin Hall magnetoresistance in Pt/Y$_{3}$Fe$_{5}$O$_{12}$ and inverted Y$_{3}$Fe$_{5}$O$_{12}$/Pt bilayers|Stephan Geprägs,Christoph Klewe,Sibylle Meyer,Dominik Graulich,Felix Schade,Marc Schneider,Sonia Francoual,Stephen P. Collins,Katharina Ollefs,Fabrice Wilhelm,Andrei Rogalev,Yves Joly,Sebastian T. B. Goennenwein,Matthias Opel,Timo Kuschel,Rudolf Gross###
(234979, 234979)
 In contrast, for the inverted layer sequence,Y3Fe5O12 thin films grown on Pt layers, Pt displays a finiteinduced magnetic moment comparable to that of all-metallic Pt/Fe bilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Static magnetic proximity effects and spin Hall magnetoresistance in Pt/Y$_{3}$Fe$_{5}$O$_{12}$ and inverted Y$_{3}$Fe$_{5}$O$_{12}$/Pt bilayers|Stephan Geprägs,Christoph Klewe,Sibylle Meyer,Dominik Graulich,Felix Schade,Marc Schneider,Sonia Francoual,Stephen P. Collins,Katharina Ollefs,Fabrice Wilhelm,Andrei Rogalev,Yves Joly,Sebastian T. B. Goennenwein,Matthias Opel,Timo Kuschel,Rudolf Gross###
(234984, 234984)
 In contrast, for the inverted layer sequence,Y3Fe5O12 thin films grown on Pt layers, Pt displays a finiteinduced magnetic moment comparable to that of all-metallic Pt/Fe bilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt/Fe
###Static magnetic proximity effects and spin Hall magnetoresistance in Pt/Y$_{3}$Fe$_{5}$O$_{12}$ and inverted Y$_{3}$Fe$_{5}$O$_{12}$/Pt bilayers|Stephan Geprägs,Christoph Klewe,Sibylle Meyer,Dominik Graulich,Felix Schade,Marc Schneider,Sonia Francoual,Stephen P. Collins,Katharina Ollefs,Fabrice Wilhelm,Andrei Rogalev,Yves Joly,Sebastian T. B. Goennenwein,Matthias Opel,Timo Kuschel,Rudolf Gross###
(235011, 235013)
 In contrast, for the inverted layer sequence,Y3Fe5O12 thin films grown on Pt layers, Pt displays a finiteinduced magnetic moment comparable to that of all-metallic Pt/Fe bilayers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Y3Fe5O12/Pt
###Static magnetic proximity effects and spin Hall magnetoresistance in Pt/Y$_{3}$Fe$_{5}$O$_{12}$ and inverted Y$_{3}$Fe$_{5}$O$_{12}$/Pt bilayers|Stephan Geprägs,Christoph Klewe,Sibylle Meyer,Dominik Graulich,Felix Schade,Marc Schneider,Sonia Francoual,Stephen P. Collins,Katharina Ollefs,Fabrice Wilhelm,Andrei Rogalev,Yves Joly,Sebastian T. B. Goennenwein,Matthias Opel,Timo Kuschel,Rudolf Gross###
(235044, 235051)
 Thismagnetic moment is found to originate from finite intermixing at theY3Fe5O12/Pt interface.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

As
###Static magnetic proximity effects and spin Hall magnetoresistance in Pt/Y$_{3}$Fe$_{5}$O$_{12}$ and inverted Y$_{3}$Fe$_{5}$O$_{12}$/Pt bilayers|Stephan Geprägs,Christoph Klewe,Sibylle Meyer,Dominik Graulich,Felix Schade,Marc Schneider,Sonia Francoual,Stephen P. Collins,Katharina Ollefs,Fabrice Wilhelm,Andrei Rogalev,Yves Joly,Sebastian T. B. Goennenwein,Matthias Opel,Timo Kuschel,Rudolf Gross###
(235056, 235056)
 As a consequence, we found a complexangle-dependent magnetoresistance indicating a superposition of the spin Halland the anisotropic magnetoresistance in these type of samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Berry curvature induced magnetotransport in 3D noncentrosymmetric metals|Ojasvi Pal,Bashab Dey,Tarun Kanti Ghosh###
(235243, 235243)
 Theseeffects impart quadratic-B dependence to the magnetoelectric and magnetothermalconductivities, leading to intriguing phenomena such as planar Hall effect,negative magnetoresistance, planar Nernst effect and negative Seebeck effect.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 3, 'D', 2]

HgTe
###Magnetohydrodynamics and electro-electron interaction of massless Dirac fermions|D. A. Khudaiberdiev,G. M. Gusev,E. B. Olshanetsky,Z. D. Kvon,N. N. Mikhailov###
(235612, 235613)
 The magnetotransport properties of massless Dirac fermions in a gapless HgTequantum well are investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magnetohydrodynamics and electro-electron interaction of massless Dirac fermions|D. A. Khudaiberdiev,G. M. Gusev,E. B. Olshanetsky,Z. D. Kvon,N. N. Mikhailov###
(235625, 235625)
 In samples with narrow channels, a largenegative magnetoresistance with a Lorentzian profile is observed, which isinterpreted as a manifestation of electron viscosity due to electron-electroninteraction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Current-Perpendicular-to-Plane Giant Magnetoresistance Effect in van der Waals Heterostructures|Xinlu Li,Yurong Su,Meng Zhu,Fanxing Zheng,Peina Zhang,Jia Zhang,Jing-Tao Lü###
(235784, 235784)
 Spin-dependent transport in a full van der Waals (vdW) giantmagnetoresistance (GMR) junctions with the structure of Fe3GeTe2/X<missing VAR>Te2/Fe3GeTe2(X<missing VAR>  Pt, Pd) has been investigated by using first-principles calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 2000, '%', 2],[240.0, 20, '%', 4]

Fe3GeTe2
###Current-Perpendicular-to-Plane Giant Magnetoresistance Effect in van der Waals Heterostructures|Xinlu Li,Yurong Su,Meng Zhu,Fanxing Zheng,Peina Zhang,Jia Zhang,Jing-Tao Lü###
(235808, 235812)
 Spin-dependent transport in a full van der Waals (vdW) giantmagnetoresistance (GMR) junctions with the structure of Fe3GeTe2/X<missing VAR>Te2/Fe3GeTe2(X<missing VAR>  Pt, Pd) has been investigated by using first-principles calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 2000, '%', 2],[212.0, 20, '%', 4]

Te2/Fe3GeTe2
###Current-Perpendicular-to-Plane Giant Magnetoresistance Effect in van der Waals Heterostructures|Xinlu Li,Yurong Su,Meng Zhu,Fanxing Zheng,Peina Zhang,Jia Zhang,Jing-Tao Lü###
(235815, 235822)
 Spin-dependent transport in a full van der Waals (vdW) giantmagnetoresistance (GMR) junctions with the structure of Fe3GeTe2/X<missing VAR>Te2/Fe3GeTe2(X<missing VAR>  Pt, Pd) has been investigated by using first-principles calculations.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[97.0, 2000, '%', 2],[202.0, 20, '%', 4]

Pt
###Current-Perpendicular-to-Plane Giant Magnetoresistance Effect in van der Waals Heterostructures|Xinlu Li,Yurong Su,Meng Zhu,Fanxing Zheng,Peina Zhang,Jia Zhang,Jing-Tao Lü###
(235829, 235829)
 Spin-dependent transport in a full van der Waals (vdW) giantmagnetoresistance (GMR) junctions with the structure of Fe3GeTe2/X<missing VAR>Te2/Fe3GeTe2(X<missing VAR>  Pt, Pd) has been investigated by using first-principles calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 2000, '%', 2],[195.0, 20, '%', 4]

Pd
###Current-Perpendicular-to-Plane Giant Magnetoresistance Effect in van der Waals Heterostructures|Xinlu Li,Yurong Su,Meng Zhu,Fanxing Zheng,Peina Zhang,Jia Zhang,Jing-Tao Lü###
(235832, 235832)
 Spin-dependent transport in a full van der Waals (vdW) giantmagnetoresistance (GMR) junctions with the structure of Fe3GeTe2/X<missing VAR>Te2/Fe3GeTe2(X<missing VAR>  Pt, Pd) has been investigated by using first-principles calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 2000, '%', 2],[192.0, 20, '%', 4]

(CPP)
###Current-Perpendicular-to-Plane Giant Magnetoresistance Effect in van der Waals Heterostructures|Xinlu Li,Yurong Su,Meng Zhu,Fanxing Zheng,Peina Zhang,Jia Zhang,Jing-Tao Lü###
(235899, 235903)
 Theballistic conductance, magnetoresistance (MR) and resistance-area product (R<missing VAR>A)have been calculated in a current-perpendicular-to-plane (CPP) geometry.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 2000, '%', 1],[121.0, 20, '%', 3]

W
###Current-Perpendicular-to-Plane Giant Magnetoresistance Effect in van der Waals Heterostructures|Xinlu Li,Yurong Su,Meng Zhu,Fanxing Zheng,Peina Zhang,Jia Zhang,Jing-Tao Lü###
(235953, 235953)
 Agiant magnetoresistance of around 2000% and R<missing VAR>A less than 0.3 Omega mum<missing VAR>2have been found in the proposed vdW CPP GMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 2000, '%', 0],[71.0, 20, '%', 2]

CPP
###Current-Perpendicular-to-Plane Giant Magnetoresistance Effect in van der Waals Heterostructures|Xinlu Li,Yurong Su,Meng Zhu,Fanxing Zheng,Peina Zhang,Jia Zhang,Jing-Tao Lü###
(235955, 235957)
 Agiant magnetoresistance of around 2000% and R<missing VAR>A less than 0.3 Omega mum<missing VAR>2have been found in the proposed vdW CPP GMR.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 2000, '%', 0],[67.0, 20, '%', 2]

In
###Current-Perpendicular-to-Plane Giant Magnetoresistance Effect in van der Waals Heterostructures|Xinlu Li,Yurong Su,Meng Zhu,Fanxing Zheng,Peina Zhang,Jia Zhang,Jing-Tao Lü###
(235964, 235964)
 In addition, the spin-orbitcoupling effect on transport and anisotropy magnetoresistance (AMR) has alsobeen investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 2000, '%', 1],[60.0, 20, '%', 1]

Fe3GeTe2
###Current-Perpendicular-to-Plane Giant Magnetoresistance Effect in van der Waals Heterostructures|Xinlu Li,Yurong Su,Meng Zhu,Fanxing Zheng,Peina Zhang,Jia Zhang,Jing-Tao Lü###
(236030, 236034)
 The calculated AMR is found to be around 20% inFe3GeTe2/trilayer-PdTe2/Fe3GeTe2 CPP GMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 2000, '%', 2],[6.0, 20, '%', 0]

PdTe2/Fe3GeTe2
###Current-Perpendicular-to-Plane Giant Magnetoresistance Effect in van der Waals Heterostructures|Xinlu Li,Yurong Su,Meng Zhu,Fanxing Zheng,Peina Zhang,Jia Zhang,Jing-Tao Lü###
(236038, 236046)
 The calculated AMR is found to be around 20% inFe3GeTe2/trilayer-PdTe2/Fe3GeTe2 CPP GMR.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[119.0, 2000, '%', 2],[14.0, 20, '%', 0]

CPP
###Current-Perpendicular-to-Plane Giant Magnetoresistance Effect in van der Waals Heterostructures|Xinlu Li,Yurong Su,Meng Zhu,Fanxing Zheng,Peina Zhang,Jia Zhang,Jing-Tao Lü###
(236048, 236050)
 The calculated AMR is found to be around 20% inFe3GeTe2/trilayer-PdTe2/Fe3GeTe2 CPP GMR.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 2000, '%', 2],[24.0, 20, '%', 0]

W
###Current-Perpendicular-to-Plane Giant Magnetoresistance Effect in van der Waals Heterostructures|Xinlu Li,Yurong Su,Meng Zhu,Fanxing Zheng,Peina Zhang,Jia Zhang,Jing-Tao Lü###
(236076, 236076)
 Both GMR and AMR in the proposed vdWCPP GMR mainly originate from the bulk electronic structure properties ofFe3GeTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 2000, '%', 3],[52.0, 20, '%', 1]

CPP
###Current-Perpendicular-to-Plane Giant Magnetoresistance Effect in van der Waals Heterostructures|Xinlu Li,Yurong Su,Meng Zhu,Fanxing Zheng,Peina Zhang,Jia Zhang,Jing-Tao Lü###
(236079, 236081)
 Both GMR and AMR in the proposed vdWCPP GMR mainly originate from the bulk electronic structure properties ofFe3GeTe2.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 2000, '%', 3],[55.0, 20, '%', 1]

Fe3GeTe2
###Current-Perpendicular-to-Plane Giant Magnetoresistance Effect in van der Waals Heterostructures|Xinlu Li,Yurong Su,Meng Zhu,Fanxing Zheng,Peina Zhang,Jia Zhang,Jing-Tao Lü###
(236106, 236110)
 Both GMR and AMR in the proposed vdWCPP GMR mainly originate from the bulk electronic structure properties ofFe3GeTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[187.0, 2000, '%', 3],[82.0, 20, '%', 1]

W
###Current-Perpendicular-to-Plane Giant Magnetoresistance Effect in van der Waals Heterostructures|Xinlu Li,Yurong Su,Meng Zhu,Fanxing Zheng,Peina Zhang,Jia Zhang,Jing-Tao Lü###
(236122, 236122)
 This work demonstrates a vdW CPP GMR with superior advantagesincluding perpendicular magnetic anisotropy, large GMR, low R<missing VAR>A as well assizable AMR may stimulate future experimental explorations and should beappealing for their applications in spintronic devices including magneticsensor and memory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[203.0, 2000, '%', 4],[98.0, 20, '%', 2]

CPP
###Current-Perpendicular-to-Plane Giant Magnetoresistance Effect in van der Waals Heterostructures|Xinlu Li,Yurong Su,Meng Zhu,Fanxing Zheng,Peina Zhang,Jia Zhang,Jing-Tao Lü###
(236124, 236126)
 This work demonstrates a vdW CPP GMR with superior advantagesincluding perpendicular magnetic anisotropy, large GMR, low R<missing VAR>A as well assizable AMR may stimulate future experimental explorations and should beappealing for their applications in spintronic devices including magneticsensor and memory.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, 2000, '%', 4],[100.0, 20, '%', 2]

ZrTe5
###Crossover behavior in the magnetoresistance of thin flakes of the topological material ZrTe5|Zhijian Xie,Xinjian Wei,Xiaobin Qiang,Yu Zhang,Shili Yan,Shimin Cao,Congkuan Tian,Peipei Wang,Liyuan Zhang,G. D. Gu,Haizhou Lu,Jian-Hao Chen###
(236248, 236250)
Crossover behavior in the magnetoresistance of thin flakes of the topological material ZrTe5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, 160, 'K', 5],[207.0, 42, 'nm', 5]

ZrTe5
###Crossover behavior in the magnetoresistance of thin flakes of the topological material ZrTe5|Zhijian Xie,Xinjian Wei,Xiaobin Qiang,Yu Zhang,Shili Yan,Shimin Cao,Congkuan Tian,Peipei Wang,Liyuan Zhang,G. D. Gu,Haizhou Lu,Jian-Hao Chen###
(236253, 236255)
 ZrTe5 is a layered material that exhibits intricate topological effects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 160, 'K', 4],[202.0, 42, 'nm', 4]

In
###Crossover behavior in the magnetoresistance of thin flakes of the topological material ZrTe5|Zhijian Xie,Xinjian Wei,Xiaobin Qiang,Yu Zhang,Shili Yan,Shimin Cao,Congkuan Tian,Peipei Wang,Liyuan Zhang,G. D. Gu,Haizhou Lu,Jian-Hao Chen###
(236313, 236313)
 In this paper the temperaturedependent magneto-transport properties of ZrTe5 thin flakes are investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 160, 'K', 2],[144.0, 42, 'nm', 2]

ZrTe5
###Crossover behavior in the magnetoresistance of thin flakes of the topological material ZrTe5|Zhijian Xie,Xinjian Wei,Xiaobin Qiang,Yu Zhang,Shili Yan,Shimin Cao,Congkuan Tian,Peipei Wang,Liyuan Zhang,G. D. Gu,Haizhou Lu,Jian-Hao Chen###
(236334, 236336)
 In this paper the temperaturedependent magneto-transport properties of ZrTe5 thin flakes are investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 160, 'K', 2],[121.0, 42, 'nm', 2]

K
###Crossover behavior in the magnetoresistance of thin flakes of the topological material ZrTe5|Zhijian Xie,Xinjian Wei,Xiaobin Qiang,Yu Zhang,Shili Yan,Shimin Cao,Congkuan Tian,Peipei Wang,Liyuan Zhang,G. D. Gu,Haizhou Lu,Jian-Hao Chen###
(236433, 236433)
 Furthermore, the value of T<missing VAR> decreases monotonically from200K to 160K with increasing thickness of the ZrTe5 thin flakes from 42nm to89nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 160, 'K', 0],[24.0, 42, 'nm', 0]

ZrTe5
###Crossover behavior in the magnetoresistance of thin flakes of the topological material ZrTe5|Zhijian Xie,Xinjian Wei,Xiaobin Qiang,Yu Zhang,Shili Yan,Shimin Cao,Congkuan Tian,Peipei Wang,Liyuan Zhang,G. D. Gu,Haizhou Lu,Jian-Hao Chen###
(236448, 236450)
 Furthermore, the value of T<missing VAR> decreases monotonically from200K to 160K with increasing thickness of the ZrTe5 thin flakes from 42nm to89nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 160, 'K', 0],[7.0, 42, 'nm', 0]

ZrTe5
###Crossover behavior in the magnetoresistance of thin flakes of the topological material ZrTe5|Zhijian Xie,Xinjian Wei,Xiaobin Qiang,Yu Zhang,Shili Yan,Shimin Cao,Congkuan Tian,Peipei Wang,Liyuan Zhang,G. D. Gu,Haizhou Lu,Jian-Hao Chen###
(236542, 236544)
 Ourfindings provide a multi-parameter indicator for the emergence of topologicalphase transition in ZrTe5 and could be extended to the study of othertopological materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 160, 'K', 2],[85.0, 42, 'nm', 2]

ZrTe5
###Crossover behavior in the magnetoresistance of thin flakes of the topological material ZrTe5|Zhijian Xie,Xinjian Wei,Xiaobin Qiang,Yu Zhang,Shili Yan,Shimin Cao,Congkuan Tian,Peipei Wang,Liyuan Zhang,G. D. Gu,Haizhou Lu,Jian-Hao Chen###
(236620, 236622)
 The temperature dependence of the three types ofmagnetoresistance also shed light on the role of anomalous Hall Effect in thetransport properties of ZrTe5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[184.0, 160, 'K', 3],[163.0, 42, 'nm', 3]

B
###Narrow Zero Mode in Organic Massless Dirac Electron System $α$-(BEDT-TTF)$_2$I$_3$|A. Mori,Y. Kawasugi,R. Doi,T. Naito,R. Kato,Y. Nishio,N. Tajima###
(236653, 236653)
Narrow Zero Mode in Organic Massless Dirac Electron System -(BEDT-TTF)2I3.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Narrow Zero Mode in Organic Massless Dirac Electron System $α$-(BEDT-TTF)$_2$I$_3$|A. Mori,Y. Kawasugi,R. Doi,T. Naito,R. Kato,Y. Nishio,N. Tajima###
(236660, 236660)
Narrow Zero Mode in Organic Massless Dirac Electron System -(BEDT-TTF)2I3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I3
###Narrow Zero Mode in Organic Massless Dirac Electron System $α$-(BEDT-TTF)$_2$I$_3$|A. Mori,Y. Kawasugi,R. Doi,T. Naito,R. Kato,Y. Nishio,N. Tajima###
(236663, 236664)
Narrow Zero Mode in Organic Massless Dirac Electron System -(BEDT-TTF)2I3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Narrow Zero Mode in Organic Massless Dirac Electron System $α$-(BEDT-TTF)$_2$I$_3$|A. Mori,Y. Kawasugi,R. Doi,T. Naito,R. Kato,Y. Nishio,N. Tajima###
(236695, 236695)
 We investigated the interlayer magnetoresistance in an organic massless Diracelectron system alpha-(BEDT-TTF)2I3 under pressure.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Narrow Zero Mode in Organic Massless Dirac Electron System $α$-(BEDT-TTF)$_2$I$_3$|A. Mori,Y. Kawasugi,R. Doi,T. Naito,R. Kato,Y. Nishio,N. Tajima###
(236702, 236702)
 We investigated the interlayer magnetoresistance in an organic massless Diracelectron system alpha-(BEDT-TTF)2I3 under pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I3
###Narrow Zero Mode in Organic Massless Dirac Electron System $α$-(BEDT-TTF)$_2$I$_3$|A. Mori,Y. Kawasugi,R. Doi,T. Naito,R. Kato,Y. Nishio,N. Tajima###
(236705, 236706)
 We investigated the interlayer magnetoresistance in an organic massless Diracelectron system alpha-(BEDT-TTF)2I3 under pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YI
###One Analytical Approach of Rashba-Edelstein Magnetoresistance in 2D Materials|Wibson W. G. Silva,José Holanda###
(236843, 236844)
 We study analytically the Rashba-Edelstein magnetoresistance (REMR) in astructure made from an insulator ferromagnet, such as yttrium iron garnet(YIG), and a 2D material (2DM) with direct and inverse Rashba-Edelsteineffects, such as SLG and MoS2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 2, 'D', 1],[8.0, 2, 'D', 0]

S
###One Analytical Approach of Rashba-Edelstein Magnetoresistance in 2D Materials|Wibson W. G. Silva,José Holanda###
(236882, 236882)
 We study analytically the Rashba-Edelstein magnetoresistance (REMR) in astructure made from an insulator ferromagnet, such as yttrium iron garnet(YIG), and a 2D material (2DM) with direct and inverse Rashba-Edelsteineffects, such as SLG and MoS2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 2, 'D', 1],[30.0, 2, 'D', 0]

MoS2
###One Analytical Approach of Rashba-Edelstein Magnetoresistance in 2D Materials|Wibson W. G. Silva,José Holanda###
(236888, 236890)
 We study analytically the Rashba-Edelstein magnetoresistance (REMR) in astructure made from an insulator ferromagnet, such as yttrium iron garnet(YIG), and a 2D material (2DM) with direct and inverse Rashba-Edelsteineffects, such as SLG and MoS2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 2, 'D', 1],[36.0, 2, 'D', 0]

In
###Extraordinary magnetometry -- a review on extraordinary magnetoresistance|Thierry Desire Pomar,Ricci Erlandsen,Bowen Zhou,Leonid Iliushyn,Rasmus Bjørk,Dennis Valbjørn Christensen###
(237091, 237091)
 In this work, we provide anextensive review of the current state-of-the-art in EMR sensors with a focus onthe hybrid device geometries, the constituent material properties andapplications of EMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 107, '%', 2],[64.0, 5, 'T', 2]

In
###Extraordinary magnetometry -- a review on extraordinary magnetoresistance|Thierry Desire Pomar,Ricci Erlandsen,Bowen Zhou,Leonid Iliushyn,Rasmus Bjørk,Dennis Valbjørn Christensen###
(237275, 237275)
In addition, we aim to improve the understanding of the EMR effect and itsinterplay with geometry and material properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[267.0, 107, '%', 5],[248.0, 5, 'T', 5]

In
###Fractional focusing peaks and collective dynamics in two-dimensional Fermi liquids|Adbhut Gupta,Gitansh Kataria,Mani Chandra,Siddhardh C. Morampudi,Saeed Fallahi,Geoff C. Gardner,Michael J. Manfra,Ravishankar Sundararaman,Jean J. Heremans###
(237475, 237475)
 In the ballistic regime addressed here, transverse magneticfocusing is habitually understood in a familiar single-particle picture ofcarriers injected from a source, following ballistic cyclotron orbits andreaching a detector.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Fractional focusing peaks and collective dynamics in two-dimensional Fermi liquids|Adbhut Gupta,Gitansh Kataria,Mani Chandra,Siddhardh C. Morampudi,Saeed Fallahi,Geoff C. Gardner,Michael J. Manfra,Ravishankar Sundararaman,Jean J. Heremans###
(237631, 237631)
 In low-temperature experiments and simulations using GaAs/AlGaAsheterostructures with high electron mobility, we show that the peaks occurindependently of the location of the detector, and only depend on thesource-drain separation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs/AlGaAs
###Fractional focusing peaks and collective dynamics in two-dimensional Fermi liquids|Adbhut Gupta,Gitansh Kataria,Mani Chandra,Siddhardh C. Morampudi,Saeed Fallahi,Geoff C. Gardner,Michael J. Manfra,Ravishankar Sundararaman,Jean J. Heremans###
(237645, 237650)
 In low-temperature experiments and simulations using GaAs/AlGaAsheterostructures with high electron mobility, we show that the peaks occurindependently of the location of the detector, and only depend on thesource-drain separation.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

At
###Giant magnetoresistance of Dirac plasma in high-mobility graphene|Na Xin,James Lourembam,P. Kumaravadivel,A. E. Kazantsev,Zefei Wu,Ciaran Mullan,Julien Barrier,Alexandra A. Geim,I. V. Grigorieva,A. Mishchenko,A. Principi,V. I. Falko,L. A. Ponomarenko,A. K. Geim,Alexey I. Berdyugin###
(237969, 237969)
 At low temperatures,the intrinsic behavior in this regime is often obscured by charge inhomogeneitybut thermal excitations can overcome the disorder at elevated temperatures andcreate electron-hole plasma of Dirac fermions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[177.0, 100, '%', 4],[181.0, 0.1, 'T', 4],[445.0, 2, 'D', 9]

In
###Giant magnetoresistance of Dirac plasma in high-mobility graphene|Na Xin,James Lourembam,P. Kumaravadivel,A. E. Kazantsev,Zefei Wu,Ciaran Mullan,Julien Barrier,Alexandra A. Geim,I. V. Grigorieva,A. Mishchenko,A. Principi,V. I. Falko,L. A. Ponomarenko,A. K. Geim,Alexey I. Berdyugin###
(238123, 238123)
 In low fields, the plasma exhibits giant parabolic magnetoresistivityreaching >100% in 0.1 T even at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 100, '%', 0],[27.0, 0.1, 'T', 0],[291.0, 2, 'D', 5]

O
###Comparison of coherent and weakly incoherent transport models for the interlayer magnetoresistance of layered Fermi liquids|Perez Moses,Ross H. McKenzie###
(238632, 238632)
 The results arerelevant to the interpretation of experiments on angular-dependentmagnetoresistance oscillations (AMRO) in quasi-one- and quasi-two-dimensionalmetals.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Comparison of coherent and weakly incoherent transport models for the interlayer magnetoresistance of layered Fermi liquids|Perez Moses,Ross H. McKenzie###
(238821, 238821)
 A universal expression is given for the dependence of theresistance at AMRO maxima and minima on the magnetic field and scattering time(and thus the temperature).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr2RuO4
###Comparison of coherent and weakly incoherent transport models for the interlayer magnetoresistance of layered Fermi liquids|Perez Moses,Ross H. McKenzie###
(239047, 239051)
 Properties (i)and (ii) are compared with published experimental data for a range ofquasi-two-dimensional organic metals and for Sr2RuO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NdFeAsO1-xF
###Hall effect and magnetoresistance in single crystals of NdFeAsO$_{1-x}$F$_{x}$|Peng Cheng,Huan Yang,Ying Jia,Lei Fang,Xiyu Zhu,Gang Mu,Hai-Hu Wen###
(239078, 239085)
Hall effect and magnetoresistance in single crystals of NdFeAsO1-xFx<missing VAR>.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[110.0, 150, 'K', 2],[132.0, 30, '%', 3],[136.0, 15, 'K', 3],[148.0, 9, 'T', 3],[170.0, 155, 'K', 4],[190.0, 155, 'K', 4],[223.0, 140, 'K', 4],[579.0, 175, 'K', 10]

NdFeAsO1-xF
###Hall effect and magnetoresistance in single crystals of NdFeAsO$_{1-x}$F$_{x}$|Peng Cheng,Huan Yang,Ying Jia,Lei Fang,Xiyu Zhu,Gang Mu,Hai-Hu Wen###
(239112, 239119)
 Hall effect and magnetoresistance have been measured on single crystals ofNdFeAsO1-xFx<missing VAR> with x<missing VAR>  0 (Tc  0  K) and x<missing VAR>  0.18 (Tc  50 K).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[76.0, 150, 'K', 1],[98.0, 30, '%', 2],[102.0, 15, 'K', 2],[114.0, 9, 'T', 2],[136.0, 155, 'K', 3],[156.0, 155, 'K', 3],[189.0, 140, 'K', 3],[545.0, 175, 'K', 9]

K
###Hall effect and magnetoresistance in single crystals of NdFeAsO$_{1-x}$F$_{x}$|Peng Cheng,Huan Yang,Ying Jia,Lei Fang,Xiyu Zhu,Gang Mu,Hai-Hu Wen###
(239137, 239137)
 Hall effect and magnetoresistance have been measured on single crystals ofNdFeAsO1-xFx<missing VAR> with x<missing VAR>  0 (Tc  0  K) and x<missing VAR>  0.18 (Tc  50 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 150, 'K', 1],[80.0, 30, '%', 2],[84.0, 15, 'K', 2],[96.0, 9, 'T', 2],[118.0, 155, 'K', 3],[138.0, 155, 'K', 3],[171.0, 140, 'K', 3],[527.0, 175, 'K', 9]

K
###Hall effect and magnetoresistance in single crystals of NdFeAsO$_{1-x}$F$_{x}$|Peng Cheng,Huan Yang,Ying Jia,Lei Fang,Xiyu Zhu,Gang Mu,Hai-Hu Wen###
(239156, 239156)
 Hall effect and magnetoresistance have been measured on single crystals ofNdFeAsO1-xFx<missing VAR> with x<missing VAR>  0 (Tc  0  K) and x<missing VAR>  0.18 (Tc  50 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 150, 'K', 1],[61.0, 30, '%', 2],[65.0, 15, 'K', 2],[77.0, 9, 'T', 2],[99.0, 155, 'K', 3],[119.0, 155, 'K', 3],[152.0, 140, 'K', 3],[508.0, 175, 'K', 9]

In
###Hall effect and magnetoresistance in single crystals of NdFeAsO$_{1-x}$F$_{x}$|Peng Cheng,Huan Yang,Ying Jia,Lei Fang,Xiyu Zhu,Gang Mu,Hai-Hu Wen###
(239332, 239332)
 In the superconductingsample with Tc  50  K, it is found that the Hall coefficient also revealsa strong temperature dependence with a negative sign.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 150, 'K', 3],[115.0, 30, '%', 2],[111.0, 15, 'K', 2],[99.0, 9, 'T', 2],[77.0, 155, 'K', 1],[57.0, 155, 'K', 1],[24.0, 140, 'K', 1],[332.0, 175, 'K', 5]

K
###Hall effect and magnetoresistance in single crystals of NdFeAsO$_{1-x}$F$_{x}$|Peng Cheng,Huan Yang,Ying Jia,Lei Fang,Xiyu Zhu,Gang Mu,Hai-Hu Wen###
(239350, 239350)
 In the superconductingsample with Tc  50  K, it is found that the Hall coefficient also revealsa strong temperature dependence with a negative sign.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 150, 'K', 3],[133.0, 30, '%', 2],[129.0, 15, 'K', 2],[117.0, 9, 'T', 2],[95.0, 155, 'K', 1],[75.0, 155, 'K', 1],[42.0, 140, 'K', 1],[314.0, 175, 'K', 5]

H
###Hall effect and magnetoresistance in single crystals of NdFeAsO$_{1-x}$F$_{x}$|Peng Cheng,Huan Yang,Ying Jia,Lei Fang,Xiyu Zhu,Gang Mu,Hai-Hu Wen###
(239512, 239512)
 Detailed analysis furtherindicates that the strong temperature dependence of R<missing VAR>H cannot be easilyunderstood with the simple multi-band model either.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[317.0, 150, 'K', 6],[295.0, 30, '%', 5],[291.0, 15, 'K', 5],[279.0, 9, 'T', 5],[257.0, 155, 'K', 4],[237.0, 155, 'K', 4],[204.0, 140, 'K', 4],[152.0, 175, 'K', 2]

S
###Hall effect and magnetoresistance in single crystals of NdFeAsO$_{1-x}$F$_{x}$|Peng Cheng,Huan Yang,Ying Jia,Lei Fang,Xiyu Zhu,Gang Mu,Hai-Hu Wen###
(239639, 239639)
 A comparison between the Hall coefficient ofthe undoped sample and the superconducting sample suggests that the doping mayremove the nesting condition for the formation of the SD<missing VAR>W order, since bothsamples have very similar temperature dependence above 175 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[444.0, 150, 'K', 8],[422.0, 30, '%', 7],[418.0, 15, 'K', 7],[406.0, 9, 'T', 7],[384.0, 155, 'K', 6],[364.0, 155, 'K', 6],[331.0, 140, 'K', 6],[25.0, 175, 'K', 0]

W
###Hall effect and magnetoresistance in single crystals of NdFeAsO$_{1-x}$F$_{x}$|Peng Cheng,Huan Yang,Ying Jia,Lei Fang,Xiyu Zhu,Gang Mu,Hai-Hu Wen###
(239641, 239641)
 A comparison between the Hall coefficient ofthe undoped sample and the superconducting sample suggests that the doping mayremove the nesting condition for the formation of the SD<missing VAR>W order, since bothsamples have very similar temperature dependence above 175 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[446.0, 150, 'K', 8],[424.0, 30, '%', 7],[420.0, 15, 'K', 7],[408.0, 9, 'T', 7],[386.0, 155, 'K', 6],[366.0, 155, 'K', 6],[333.0, 140, 'K', 6],[23.0, 175, 'K', 0]

B5
###Weak Localization and Negative Magnetoresistance in Wurtzite-type Crystals|F. G. Pikus,G. E. Pikus###
(239778, 239779)
 We have developed a theory of the negative magnetoresistance due to the weaklocalization in uniaxial wurtzite-type crystals, in which the spin splitting ofthe conduction band is linear in the wave vector, unlike the cubic rm A3B5 crystals.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CPP
###CPP- Giant Magnetoresistance and Thermo-Electric Power of multilayers|S. Krompiewski,U. Krey###
(239945, 239947)
CPP- Giant Magnetoresistance and Thermo-Electric Power of multilayers.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###CPP- Giant Magnetoresistance and Thermo-Electric Power of multilayers|S. Krompiewski,U. Krey###
(239984, 239984)
 Oscillations of magnetoresistance and thermo-electric power (TEP) vs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(CPP)
###CPP- Giant Magnetoresistance and Thermo-Electric Power of multilayers|S. Krompiewski,U. Krey###
(240026, 240030)
 bothnonmagnetic spacer as well as ferromagnetic slab thicknesses are studied in thecurrent-perpendicular-to-plane (CPP) geometry, in terms of a single-bandtight-binding model.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###CPP- Giant Magnetoresistance and Thermo-Electric Power of multilayers|S. Krompiewski,U. Krey###
(240104, 240104)
 The spin-dependent conductance has been calculated fromthe Kubo formula by means of a recursion Greens<missing VAR> function technique, and the TEP  directly from the well-known Onsager relations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###CPP- Giant Magnetoresistance and Thermo-Electric Power of multilayers|S. Krompiewski,U. Krey###
(240125, 240125)
  In general, the observed oscillations may have either just one or twoperiods.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###CPP- Giant Magnetoresistance and Thermo-Electric Power of multilayers|S. Krompiewski,U. Krey###
(240154, 240154)
 In the latter case the long period of oscillations, related tospectacular beats, is apparently of non-R<missing VAR>KKY type.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

KKY
###CPP- Giant Magnetoresistance and Thermo-Electric Power of multilayers|S. Krompiewski,U. Krey###
(240192, 240194)
 In the latter case the long period of oscillations, related tospectacular beats, is apparently of non-R<missing VAR>KKY type.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###CPP- Giant Magnetoresistance and Thermo-Electric Power of multilayers|S. Krompiewski,U. Krey###
(240208, 240208)
  The relative TEP oscillations are strongly enhanced in comparison with thoseof the giant magnetoresistance, have the same periods, but different phases anda negative bias.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.7Ca0.3MnO3
###Anisotropic strains and magnetoresistance of La_{0.7}Ca_{0.3}MnO_{3}|T. Y. Koo,S. H. Park,K. B. Lee,Y. H. Jeong###
(240279, 240285)
Anisotropic strains and magnetoresistance of La0.7Ca0.3MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.7Ca0.3MnO3
###Anisotropic strains and magnetoresistance of La_{0.7}Ca_{0.3}MnO_{3}|T. Y. Koo,S. H. Park,K. B. Lee,Y. H. Jeong###
(240298, 240304)
 Thin films of perovskite manganite La0.7Ca0.3MnO3 were grownepitaxially on SrTiO3(100), MgO(100) and LaAlO3(100) substrates by the pulsedlaser deposition method.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O3
###Anisotropic strains and magnetoresistance of La_{0.7}Ca_{0.3}MnO_{3}|T. Y. Koo,S. H. Park,K. B. Lee,Y. H. Jeong###
(240317, 240318)
 Thin films of perovskite manganite La0.7Ca0.3MnO3 were grownepitaxially on SrTiO3(100), MgO(100) and LaAlO3(100) substrates by the pulsedlaser deposition method.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O3
###Anisotropic strains and magnetoresistance of La_{0.7}Ca_{0.3}MnO_{3}|T. Y. Koo,S. H. Park,K. B. Lee,Y. H. Jeong###
(240334, 240335)
 Thin films of perovskite manganite La0.7Ca0.3MnO3 were grownepitaxially on SrTiO3(100), MgO(100) and LaAlO3(100) substrates by the pulsedlaser deposition method.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Anisotropic strains and magnetoresistance of La_{0.7}Ca_{0.3}MnO_{3}|T. Y. Koo,S. H. Park,K. B. Lee,Y. H. Jeong###
(240445, 240448)
, contractedtetragonal, cubic, and elongated tetragonal for SrTiO3, MgO, and LaAlO3cases, respectively, while the unit cell of the bulk is cubic.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Anisotropic strains and magnetoresistance of La_{0.7}Ca_{0.3}MnO_{3}|T. Y. Koo,S. H. Park,K. B. Lee,Y. H. Jeong###
(240451, 240452)
, contractedtetragonal, cubic, and elongated tetragonal for SrTiO3, MgO, and LaAlO3cases, respectively, while the unit cell of the bulk is cubic.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaAlO3
###Anisotropic strains and magnetoresistance of La_{0.7}Ca_{0.3}MnO_{3}|T. Y. Koo,S. H. Park,K. B. Lee,Y. H. Jeong###
(240457, 240460)
, contractedtetragonal, cubic, and elongated tetragonal for SrTiO3, MgO, and LaAlO3cases, respectively, while the unit cell of the bulk is cubic.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.7Ca0.3MnO3
###Anisotropic strains and magnetoresistance of La_{0.7}Ca_{0.3}MnO_{3}|T. Y. Koo,S. H. Park,K. B. Lee,Y. H. Jeong###
(240546, 240552)
 The present result demonstrates that the magnetoresistance ofLa0.7Ca0.3MnO3 can be controlled by lattice distortion via externallyimposed strains.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magnetoresistance of the double-tunnel-junction Coulomb Blockade with magnetic metals|Kingshuk Majumdar,Selman Hershfield###
(240729, 240729)
 In all cases the large bias limit can be obtained by adding theresistances of each of the junctions in series.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs/AlGaAs
###2D Lattice of coupled Sinai billiards: metal or insulator at g<<1|M. V. Budantsev,Z. D. Kvon,A. G. Pogosov,G. M. Gusev,J. C. Portal,D. K. Maude,N. T. Moshegov,A. I. Toropov###
(240977, 240982)
 We investigate the transport in a two-dimensional (2D) lattice of coupledSinai billiards fabricated on the basis of a high-mobility 2D electron gas inGaAs/AlGaAs heterojunction.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[9.0, 2, 'D', 0]

In
###2D Lattice of coupled Sinai billiards: metal or insulator at g<<1|M. V. Budantsev,Z. D. Kvon,A. G. Pogosov,G. M. Gusev,J. C. Portal,D. K. Maude,N. T. Moshegov,A. I. Toropov###
(241086, 241086)
 In going from g<missing VAR>>1 to g<missing VAR><<1 it strongly increases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 2, 'D', 3]

P
###Impurities and Inelastic Processes in Magnetic Tunnel Junctions|A. M. Bratkovsky,J. H. Nickel###
(241289, 241289)
 Previously we predicted that defects in the barrierwould result in reduced effective polarization P of the impurity assistedcurrent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 3, 'd', 1]

Tl2Mn2O7
###Spin Dynamics of the Magnetoresistive Pyrochlore Tl_2Mn_2O_7|J. W. Lynn,L. Vasiliu-Doloc,M. A. Subramanian###
(241548, 241553)
Spin Dynamics of the Magnetoresistive Pyrochlore Tl2Mn2O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6363636363636364,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tl2Mn2O7
###Spin Dynamics of the Magnetoresistive Pyrochlore Tl_2Mn_2O_7|J. W. Lynn,L. Vasiliu-Doloc,M. A. Subramanian###
(241593, 241598)
 Neutron scattering has been used to study the magnetic order and spindynamics of the colossal magnetoresistive pyrochlore Tl2Mn2O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6363636363636364,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Spin Dynamics of the Magnetoresistive Pyrochlore Tl_2Mn_2O_7|J. W. Lynn,L. Vasiliu-Doloc,M. A. Subramanian###
(241633, 241633)
 On coolingfrom the paramagnetic state, magnetic correlations develop and appear todiverge at T<missing VAR>C (123 K).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Spin Dynamics of the Magnetoresistive Pyrochlore Tl_2Mn_2O_7|J. W. Lynn,L. Vasiliu-Doloc,M. A. Subramanian###
(241638, 241638)
 On coolingfrom the paramagnetic state, magnetic correlations develop and appear todiverge at T<missing VAR>C (123 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin Dynamics of the Magnetoresistive Pyrochlore Tl_2Mn_2O_7|J. W. Lynn,L. Vasiliu-Doloc,M. A. Subramanian###
(241642, 241642)
 In the ferromagnetic phase well defined spin waves areobserved, with a gapless (Delta <0.04 meV) dispersion relation E<missing VAR>Dq2 asexpected for an ideal isotropic ferromagnet.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Spin Dynamics of the Magnetoresistive Pyrochlore Tl_2Mn_2O_7|J. W. Lynn,L. Vasiliu-Doloc,M. A. Subramanian###
(241677, 241677)
 In the ferromagnetic phase well defined spin waves areobserved, with a gapless (Delta <0.04 meV) dispersion relation E<missing VAR>Dq2 asexpected for an ideal isotropic ferromagnet.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Spin Dynamics of the Magnetoresistive Pyrochlore Tl_2Mn_2O_7|J. W. Lynn,L. Vasiliu-Doloc,M. A. Subramanian###
(241704, 241704)
 As T<missing VAR> approaches T<missing VAR>C from low T<missing VAR>,the spin waves renormalize, but no significant central diffusive component tothe fluctuation spectrum is observed in stark contrast to theLa1-x<missing VAR>(Ca,Ba,Sr)x<missing VAR>MnO3 system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Spin Dynamics of the Magnetoresistive Pyrochlore Tl_2Mn_2O_7|J. W. Lynn,L. Vasiliu-Doloc,M. A. Subramanian###
(241711, 241711)
 As T<missing VAR> approaches T<missing VAR>C from low T<missing VAR>,the spin waves renormalize, but no significant central diffusive component tothe fluctuation spectrum is observed in stark contrast to theLa1-x<missing VAR>(Ca,Ba,Sr)x<missing VAR>MnO3 system.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ca
###Spin Dynamics of the Magnetoresistive Pyrochlore Tl_2Mn_2O_7|J. W. Lynn,L. Vasiliu-Doloc,M. A. Subramanian###
(241771, 241771)
 As T<missing VAR> approaches T<missing VAR>C from low T<missing VAR>,the spin waves renormalize, but no significant central diffusive component tothe fluctuation spectrum is observed in stark contrast to theLa1-x<missing VAR>(Ca,Ba,Sr)x<missing VAR>MnO3 system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ba
###Spin Dynamics of the Magnetoresistive Pyrochlore Tl_2Mn_2O_7|J. W. Lynn,L. Vasiliu-Doloc,M. A. Subramanian###
(241773, 241773)
 As T<missing VAR> approaches T<missing VAR>C from low T<missing VAR>,the spin waves renormalize, but no significant central diffusive component tothe fluctuation spectrum is observed in stark contrast to theLa1-x<missing VAR>(Ca,Ba,Sr)x<missing VAR>MnO3 system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr
###Spin Dynamics of the Magnetoresistive Pyrochlore Tl_2Mn_2O_7|J. W. Lynn,L. Vasiliu-Doloc,M. A. Subramanian###
(241775, 241775)
 As T<missing VAR> approaches T<missing VAR>C from low T<missing VAR>,the spin waves renormalize, but no significant central diffusive component tothe fluctuation spectrum is observed in stark contrast to theLa1-x<missing VAR>(Ca,Ba,Sr)x<missing VAR>MnO3 system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnO3
###Spin Dynamics of the Magnetoresistive Pyrochlore Tl_2Mn_2O_7|J. W. Lynn,L. Vasiliu-Doloc,M. A. Subramanian###
(241778, 241780)
 As T<missing VAR> approaches T<missing VAR>C from low T<missing VAR>,the spin waves renormalize, but no significant central diffusive component tothe fluctuation spectrum is observed in stark contrast to theLa1-x<missing VAR>(Ca,Ba,Sr)x<missing VAR>MnO3 system.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ca
###Characterization of transport and magnetic properties in thin film La(0.67)(Ca(x)Sr(1-x))(0.33)MnO(3) mixtures|P. R. Broussard,S. B. Qadri,V. M. Browning,V. C. Cestone###
(241863, 241863)
Characterization of transport and magnetic properties in thin film La(0.67)(Ca(x)Sr(1-x))(0.33)MnO(3) mixtures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr(1-x)
###Characterization of transport and magnetic properties in thin film La(0.67)(Ca(x)Sr(1-x))(0.33)MnO(3) mixtures|P. R. Broussard,S. B. Qadri,V. M. Browning,V. C. Cestone###
(241867, 241872)
Characterization of transport and magnetic properties in thin film La(0.67)(Ca(x)Sr(1-x))(0.33)MnO(3) mixtures.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

La0.67
###Characterization of transport and magnetic properties in thin film La(0.67)(Ca(x)Sr(1-x))(0.33)MnO(3) mixtures|P. R. Broussard,S. B. Qadri,V. M. Browning,V. C. Cestone###
(241905, 241906)
 We have grown thin films of (100) orientedLa0.67(Cax<missing VAR>Sr1-x)0.33MnO3 on (100) NdGaO3 substrates byoff-axis sputtering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ca
###Characterization of transport and magnetic properties in thin film La(0.67)(Ca(x)Sr(1-x))(0.33)MnO(3) mixtures|P. R. Broussard,S. B. Qadri,V. M. Browning,V. C. Cestone###
(241908, 241908)
 We have grown thin films of (100) orientedLa0.67(Cax<missing VAR>Sr1-x)0.33MnO3 on (100) NdGaO3 substrates byoff-axis sputtering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnO3
###Characterization of transport and magnetic properties in thin film La(0.67)(Ca(x)Sr(1-x))(0.33)MnO(3) mixtures|P. R. Broussard,S. B. Qadri,V. M. Browning,V. C. Cestone###
(241916, 241918)
 We have grown thin films of (100) orientedLa0.67(Cax<missing VAR>Sr1-x)0.33MnO3 on (100) NdGaO3 substrates byoff-axis sputtering.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NdGaO3
###Characterization of transport and magnetic properties in thin film La(0.67)(Ca(x)Sr(1-x))(0.33)MnO(3) mixtures|P. R. Broussard,S. B. Qadri,V. M. Browning,V. C. Cestone###
(241926, 241929)
 We have grown thin films of (100) orientedLa0.67(Cax<missing VAR>Sr1-x)0.33MnO3 on (100) NdGaO3 substrates byoff-axis sputtering.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ca/Sr
###Characterization of transport and magnetic properties in thin film La(0.67)(Ca(x)Sr(1-x))(0.33)MnO(3) mixtures|P. R. Broussard,S. B. Qadri,V. M. Browning,V. C. Cestone###
(241976, 241978)
 We have looked at the changes in the resistivity andmagnetoresistance of the samples as the Ca/Sr ratio was varied.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Sr
###Characterization of transport and magnetic properties in thin film La(0.67)(Ca(x)Sr(1-x))(0.33)MnO(3) mixtures|P. R. Broussard,S. B. Qadri,V. M. Browning,V. C. Cestone###
(242137, 242137)
 The room temperature magnetoresistance exhibits amaximum as the peak temperature is increased by the substitution of Sr for Ca,and a change in the field dependence to the resistivity at room temperature isobserved.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ca
###Characterization of transport and magnetic properties in thin film La(0.67)(Ca(x)Sr(1-x))(0.33)MnO(3) mixtures|P. R. Broussard,S. B. Qadri,V. M. Browning,V. C. Cestone###
(242141, 242141)
 The room temperature magnetoresistance exhibits amaximum as the peak temperature is increased by the substitution of Sr for Ca,and a change in the field dependence to the resistivity at room temperature isobserved.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Au(Fe)
###Theory of magnetoresistance in films of dilute magnetic alloys|L. Borda,A. Zawadowski###
(242286, 242289)
 Recently Giordano has measured themagnetoresistance of dilute Au(Fe) films for different thicknesses well abovethe Kondo temperature T<missing VAR>K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Theory of magnetoresistance in films of dilute magnetic alloys|L. Borda,A. Zawadowski###
(242311, 242311)
 Recently Giordano has measured themagnetoresistance of dilute Au(Fe) films for different thicknesses well abovethe Kondo temperature T<missing VAR>K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Theory of magnetoresistance in films of dilute magnetic alloys|L. Borda,A. Zawadowski###
(242314, 242314)
 In this way he verified the existence of thatanisotropy even for such a case where the Kondo effect is not dominating.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr2FeMoO6
###Hall effect of epitaxial double-perovskite Sr_2FeMoO_6 thin films|W. Westerburg,F. Martin,G. Jakob###
(242491, 242496)
Hall effect of epitaxial double-perovskite Sr2FeMoO6 thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 4, 'K', 2],[98.0, 8, 'T', 2],[159.0, 300, 'K', 5],[170.0, -1.87, 'x', 5],[284.0, 30, 'K', 8],[289.0, 100, 'K', 8]

Sr2FeMoO6
###Hall effect of epitaxial double-perovskite Sr_2FeMoO_6 thin films|W. Westerburg,F. Martin,G. Jakob###
(242521, 242526)
 We prepared high epitaxial thin films of the compound Sr2FeMoO6 with narrowrocking curves by pulsed laser deposition.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 4, 'K', 1],[68.0, 8, 'T', 1],[129.0, 300, 'K', 4],[140.0, -1.87, 'x', 4],[254.0, 30, 'K', 7],[259.0, 100, 'K', 7]

As
###Hall effect of epitaxial double-perovskite Sr_2FeMoO_6 thin films|W. Westerburg,F. Martin,G. Jakob###
(242675, 242675)
 We found at 300 K an ordinary Hall coefficent of -1.87x10-10m<missing VAR>3/As, corresponding to a nominal charge carrier density of four electrons performula unit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 4, 'K', 3],[81.0, 8, 'T', 3],[20.0, 300, 'K', 0],[9.0, -1.87, 'x', 0],[105.0, 30, 'K', 3],[110.0, 100, 'K', 3]

At
###Hall effect of epitaxial double-perovskite Sr_2FeMoO_6 thin films|W. Westerburg,F. Martin,G. Jakob###
(242706, 242706)
 At low temperature only a small negative magnetoresistance isobserved which vanishes at higher temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 4, 'K', 4],[112.0, 8, 'T', 4],[51.0, 300, 'K', 1],[40.0, -1.87, 'x', 1],[74.0, 30, 'K', 2],[79.0, 100, 'K', 2]

As
###Magnetoresistance of Granular Superconducting Metals in a Strong Magnetic Field|I. S. Beloborodov,K. B. Efetov,A. I. Larkin###
(243017, 243017)
 As a result, the resistivity of the normal state exceeds theclassical resistivity approaching the latter only in the limit of extremelystrong magnetic fields, and this leads to a negative magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La1-xCa
###Influence of high-energy electron irradiation on the transport properties of La_{1-x}Ca_{x}MnO_{3} films (x \approx 1/3)|B. I. Belevtsev,V. B. Krasovitsky,V. V. Bobkov,D. G. Naugle,K. D. D. Rathnayaka,A. Parasiris###
(243447, 243451)
Influence of high-energy electron irradiation on the transport properties of La1-xCax<missing VAR>MnO3 films (x<missing VAR> approx 1/3).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[101.0, 6, 'MeV', 2]

MnO3
###Influence of high-energy electron irradiation on the transport properties of La_{1-x}Ca_{x}MnO_{3} films (x \approx 1/3)|B. I. Belevtsev,V. B. Krasovitsky,V. V. Bobkov,D. G. Naugle,K. D. D. Rathnayaka,A. Parasiris###
(243453, 243455)
Influence of high-energy electron irradiation on the transport properties of La1-xCax<missing VAR>MnO3 films (x<missing VAR> approx 1/3).
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 6, 'MeV', 2]

La1-xCa
###Influence of high-energy electron irradiation on the transport properties of La_{1-x}Ca_{x}MnO_{3} films (x \approx 1/3)|B. I. Belevtsev,V. B. Krasovitsky,V. V. Bobkov,D. G. Naugle,K. D. D. Rathnayaka,A. Parasiris###
(243497, 243501)
 The effect of crystal lattice disorder on the conductivity and colossalmagnetoresistance in La1-xCax<missing VAR>MnO3 (x<missing VAR> approx 0.33) films has beenexamined.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[51.0, 6, 'MeV', 1]

MnO3
###Influence of high-energy electron irradiation on the transport properties of La_{1-x}Ca_{x}MnO_{3} films (x \approx 1/3)|B. I. Belevtsev,V. B. Krasovitsky,V. V. Bobkov,D. G. Naugle,K. D. D. Rathnayaka,A. Parasiris###
(243503, 243505)
 The effect of crystal lattice disorder on the conductivity and colossalmagnetoresistance in La1-xCax<missing VAR>MnO3 (x<missing VAR> approx 0.33) films has beenexamined.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 6, 'MeV', 1]

At
###Influence of high-energy electron irradiation on the transport properties of La_{1-x}Ca_{x}MnO_{3} films (x \approx 1/3)|B. I. Belevtsev,V. B. Krasovitsky,V. V. Bobkov,D. G. Naugle,K. D. D. Rathnayaka,A. Parasiris###
(243734, 243734)
 At the same time irradiation has much less effect on Tc or on themagnitude of the colossal magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[182.0, 6, 'MeV', 5]

La0.67Ca0.33MnO3
###The effect of the annealing temperature on the local distortion of La$_{0.67}$Ca$_{0.33}$MnO$_3$ thin films|D. Cao,F. Bridges,D. Worledge,C. Booth,T. Geballe###
(243823, 243829)
The effect of the annealing temperature on the local distortion of La0.67Ca0.33MnO3 thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.066,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.134,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 1000, 'K', 1],[72.0, 1200, 'K', 1]

Mn
###The effect of the annealing temperature on the local distortion of La$_{0.67}$Ca$_{0.33}$MnO$_3$ thin films|D. Cao,F. Bridges,D. Worledge,C. Booth,T. Geballe###
(243836, 243836)
 Mn K-edge fluorescence data are presented for thin film samples (3000AA)of Colossal Magnetoresistive (CMR) La0.67Ca0.33MnO3 as-deposited,and post-annealed at 1000 K and 1200 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 1000, 'K', 0],[65.0, 1200, 'K', 0]

K
###The effect of the annealing temperature on the local distortion of La$_{0.67}$Ca$_{0.33}$MnO$_3$ thin films|D. Cao,F. Bridges,D. Worledge,C. Booth,T. Geballe###
(243838, 243838)
 Mn K-edge fluorescence data are presented for thin film samples (3000AA)of Colossal Magnetoresistive (CMR) La0.67Ca0.33MnO3 as-deposited,and post-annealed at 1000 K and 1200 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 1000, 'K', 0],[63.0, 1200, 'K', 0]

C
###The effect of the annealing temperature on the local distortion of La$_{0.67}$Ca$_{0.33}$MnO$_3$ thin films|D. Cao,F. Bridges,D. Worledge,C. Booth,T. Geballe###
(243872, 243872)
 Mn K-edge fluorescence data are presented for thin film samples (3000AA)of Colossal Magnetoresistive (CMR) La0.67Ca0.33MnO3 as-deposited,and post-annealed at 1000 K and 1200 K.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 1000, 'K', 0],[29.0, 1200, 'K', 0]

La0.67Ca0.33MnO3
###The effect of the annealing temperature on the local distortion of La$_{0.67}$Ca$_{0.33}$MnO$_3$ thin films|D. Cao,F. Bridges,D. Worledge,C. Booth,T. Geballe###
(243877, 243883)
 Mn K-edge fluorescence data are presented for thin film samples (3000AA)of Colossal Magnetoresistive (CMR) La0.67Ca0.33MnO3 as-deposited,and post-annealed at 1000 K and 1200 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.066,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.134,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 1000, 'K', 0],[18.0, 1200, 'K', 0]

In
###The effect of the annealing temperature on the local distortion of La$_{0.67}$Ca$_{0.33}$MnO$_3$ thin films|D. Cao,F. Bridges,D. Worledge,C. Booth,T. Geballe###
(243985, 243985)
 Incontrast, the static distortion in the samples decreases with the annealingtemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 1000, 'K', 3],[84.0, 1200, 'K', 3]

C
###The effect of the annealing temperature on the local distortion of La$_{0.67}$Ca$_{0.33}$MnO$_3$ thin films|D. Cao,F. Bridges,D. Worledge,C. Booth,T. Geballe###
(244129, 244129)
 The as-deposited sample also hasthe highest magnetoresistance (MR), which indicates some other mechanism mayalso contribute to the transport properties of CMR samples.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[231.0, 1000, 'K', 5],[228.0, 1200, 'K', 5]

Sr2FeMoO6
###Magnetoresistance in ordered and disordered double perovskite oxide, Sr$_2$FeMoO$_6$|D. D. Sarma,E. V. Sampathkumaran,Sugata Ray,R. Nagarajan,Subham Majumdar,Ashwani Kumar,G. Nalini,T. N. GuruRow###
(244504, 244509)
Magnetoresistance in ordered and disordered double perovskite oxide, Sr2FeMoO6.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr2FeMoO6
###Magnetoresistance in ordered and disordered double perovskite oxide, Sr$_2$FeMoO$_6$|D. D. Sarma,E. V. Sampathkumaran,Sugata Ray,R. Nagarajan,Subham Majumdar,Ashwani Kumar,G. Nalini,T. N. GuruRow###
(244538, 244543)
 We have prepared crystallographically ordered and disorder specimens of thedouble perovskite, Sr2FeMoO6 and investigated their magnetoresistancebehaviour.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Magnetoresistance in ordered and disordered double perovskite oxide, Sr$_2$FeMoO$_6$|D. D. Sarma,E. V. Sampathkumaran,Sugata Ray,R. Nagarajan,Subham Majumdar,Ashwani Kumar,G. Nalini,T. N. GuruRow###
(244569, 244569)
 The extent of ordering between the Fe and Mo sites in the twosamples is determined by Rietveld analysis of powder x<missing VAR>-ray diffraction patternsand reconfirmed by Mossbauer studies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mo
###Magnetoresistance in ordered and disordered double perovskite oxide, Sr$_2$FeMoO$_6$|D. D. Sarma,E. V. Sampathkumaran,Sugata Ray,R. Nagarajan,Subham Majumdar,Ashwani Kumar,G. Nalini,T. N. GuruRow###
(244573, 244573)
 The extent of ordering between the Fe and Mo sites in the twosamples is determined by Rietveld analysis of powder x<missing VAR>-ray diffraction patternsand reconfirmed by Mossbauer studies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Weak anisotropy and disorder dependence of the in-plane magnetoresistance in high mobility (100) Si-inversion layers|V. M. Pudalov,G. Brunthaler,A. Prinz,G. Bauer###
(244812, 244812)
Weak anisotropy and disorder dependence of the in-plane magnetoresistance in high mobility (100) Si-inversion layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 2, 'D', 1]

Si
###Weak anisotropy and disorder dependence of the in-plane magnetoresistance in high mobility (100) Si-inversion layers|V. M. Pudalov,G. Brunthaler,A. Prinz,G. Bauer###
(244855, 244855)
 We report studies of the magnetoresistance (MR) in a two-dimensional electronsystem in (100) Si-inversion layers, for perpendicular and parallelorientations of the current with respect to the magnetic field in the 2D-plane.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 2, 'D', 0]

Si
###Weak anisotropy and disorder dependence of the in-plane magnetoresistance in high mobility (100) Si-inversion layers|V. M. Pudalov,G. Brunthaler,A. Prinz,G. Bauer###
(244943, 244943)
The magnetoresistance is almost isotropic; this result does not support thesuggestion of the orbital origin of the MR in Si-inversion layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 2, 'D', 1]

In
###Weak anisotropy and disorder dependence of the in-plane magnetoresistance in high mobility (100) Si-inversion layers|V. M. Pudalov,G. Brunthaler,A. Prinz,G. Bauer###
(244950, 244950)
 In thehopping regime, however, the MR contains a weak anisotropic component that isnon-monotonic in magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 2, 'D', 2]

B
###Resistance effects due to magnetic guiding orbits|J. Reijniers,F. M. Peeters###
(245273, 245273)
 bf 84, 2231 (2000)] forthe magneto- and Hall resistance are explained using a semi-classical theorybased on the Landauer-Bu<missing VAR>ttiker formula.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 84, ',', 0]

Pb
###Ferromagnetism and large negative magnetoresistance in Pb doped Bi-Sr-Co-O misfit-layer compound|I. Tsukada,T. Yamamoto,M. Takagi,T. Tsubone,S. Konno,K. Uchinokura###
(245416, 245416)
Ferromagnetism and large negative magnetoresistance in Pb doped Bi-Sr-Co-O misfit-layer compound.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi
###Ferromagnetism and large negative magnetoresistance in Pb doped Bi-Sr-Co-O misfit-layer compound|I. Tsukada,T. Yamamoto,M. Takagi,T. Tsubone,S. Konno,K. Uchinokura###
(245420, 245420)
Ferromagnetism and large negative magnetoresistance in Pb doped Bi-Sr-Co-O misfit-layer compound.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr
###Ferromagnetism and large negative magnetoresistance in Pb doped Bi-Sr-Co-O misfit-layer compound|I. Tsukada,T. Yamamoto,M. Takagi,T. Tsubone,S. Konno,K. Uchinokura###
(245422, 245422)
Ferromagnetism and large negative magnetoresistance in Pb doped Bi-Sr-Co-O misfit-layer compound.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Ferromagnetism and large negative magnetoresistance in Pb doped Bi-Sr-Co-O misfit-layer compound|I. Tsukada,T. Yamamoto,M. Takagi,T. Tsubone,S. Konno,K. Uchinokura###
(245424, 245424)
Ferromagnetism and large negative magnetoresistance in Pb doped Bi-Sr-Co-O misfit-layer compound.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Ferromagnetism and large negative magnetoresistance in Pb doped Bi-Sr-Co-O misfit-layer compound|I. Tsukada,T. Yamamoto,M. Takagi,T. Tsubone,S. Konno,K. Uchinokura###
(245426, 245426)
Ferromagnetism and large negative magnetoresistance in Pb doped Bi-Sr-Co-O misfit-layer compound.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pb
###Ferromagnetism and large negative magnetoresistance in Pb doped Bi-Sr-Co-O misfit-layer compound|I. Tsukada,T. Yamamoto,M. Takagi,T. Tsubone,S. Konno,K. Uchinokura###
(245450, 245450)
 Ferromagnetism and accompanying large negative magnetoresistance inPb-substituted Bi-Sr-Co-O misfit-layer compound are investigated in detail.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi
###Ferromagnetism and large negative magnetoresistance in Pb doped Bi-Sr-Co-O misfit-layer compound|I. Tsukada,T. Yamamoto,M. Takagi,T. Tsubone,S. Konno,K. Uchinokura###
(245454, 245454)
 Ferromagnetism and accompanying large negative magnetoresistance inPb-substituted Bi-Sr-Co-O misfit-layer compound are investigated in detail.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr
###Ferromagnetism and large negative magnetoresistance in Pb doped Bi-Sr-Co-O misfit-layer compound|I. Tsukada,T. Yamamoto,M. Takagi,T. Tsubone,S. Konno,K. Uchinokura###
(245456, 245456)
 Ferromagnetism and accompanying large negative magnetoresistance inPb-substituted Bi-Sr-Co-O misfit-layer compound are investigated in detail.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Ferromagnetism and large negative magnetoresistance in Pb doped Bi-Sr-Co-O misfit-layer compound|I. Tsukada,T. Yamamoto,M. Takagi,T. Tsubone,S. Konno,K. Uchinokura###
(245458, 245458)
 Ferromagnetism and accompanying large negative magnetoresistance inPb-substituted Bi-Sr-Co-O misfit-layer compound are investigated in detail.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Ferromagnetism and large negative magnetoresistance in Pb doped Bi-Sr-Co-O misfit-layer compound|I. Tsukada,T. Yamamoto,M. Takagi,T. Tsubone,S. Konno,K. Uchinokura###
(245460, 245460)
 Ferromagnetism and accompanying large negative magnetoresistance inPb-substituted Bi-Sr-Co-O misfit-layer compound are investigated in detail.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi
###Ferromagnetism and large negative magnetoresistance in Pb doped Bi-Sr-Co-O misfit-layer compound|I. Tsukada,T. Yamamoto,M. Takagi,T. Tsubone,S. Konno,K. Uchinokura###
(245487, 245487)
Recent structural analysis of (Bi,Pb)2Sr3Co2O9, which hasbeen believed to be a Co analogue ofBi2Sr2CaCu2O8delta, revealed that it has a more complexstructure including a CoO2 hexagonal layer [T<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pb
###Ferromagnetism and large negative magnetoresistance in Pb doped Bi-Sr-Co-O misfit-layer compound|I. Tsukada,T. Yamamoto,M. Takagi,T. Tsubone,S. Konno,K. Uchinokura###
(245489, 245489)
Recent structural analysis of (Bi,Pb)2Sr3Co2O9, which hasbeen believed to be a Co analogue ofBi2Sr2CaCu2O8delta, revealed that it has a more complexstructure including a CoO2 hexagonal layer [T<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr3Co2O9
###Ferromagnetism and large negative magnetoresistance in Pb doped Bi-Sr-Co-O misfit-layer compound|I. Tsukada,T. Yamamoto,M. Takagi,T. Tsubone,S. Konno,K. Uchinokura###
(245492, 245497)
Recent structural analysis of (Bi,Pb)2Sr3Co2O9, which hasbeen believed to be a Co analogue ofBi2Sr2CaCu2O8delta, revealed that it has a more complexstructure including a CoO2 hexagonal layer [T<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6428571428571429,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0.21428571428571427,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Ferromagnetism and large negative magnetoresistance in Pb doped Bi-Sr-Co-O misfit-layer compound|I. Tsukada,T. Yamamoto,M. Takagi,T. Tsubone,S. Konno,K. Uchinokura###
(245515, 245515)
Recent structural analysis of (Bi,Pb)2Sr3Co2O9, which hasbeen believed to be a Co analogue ofBi2Sr2CaCu2O8delta, revealed that it has a more complexstructure including a CoO2 hexagonal layer [T<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Sr2CaCu2O8
###Ferromagnetism and large negative magnetoresistance in Pb doped Bi-Sr-Co-O misfit-layer compound|I. Tsukada,T. Yamamoto,M. Takagi,T. Tsubone,S. Konno,K. Uchinokura###
(245522, 245530)
Recent structural analysis of (Bi,Pb)2Sr3Co2O9, which hasbeen believed to be a Co analogue ofBi2Sr2CaCu2O8delta, revealed that it has a more complexstructure including a CoO2 hexagonal layer [T<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.06666666666666667,0,0,0,0,0,0,0,0,0.13333333333333333,0,0,0,0,0,0,0,0,0.13333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoO2
###Ferromagnetism and large negative magnetoresistance in Pb doped Bi-Sr-Co-O misfit-layer compound|I. Tsukada,T. Yamamoto,M. Takagi,T. Tsubone,S. Konno,K. Uchinokura###
(245555, 245557)
Recent structural analysis of (Bi,Pb)2Sr3Co2O9, which hasbeen believed to be a Co analogue ofBi2Sr2CaCu2O8delta, revealed that it has a more complexstructure including a CoO2 hexagonal layer [T<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pb
###Ferromagnetism and large negative magnetoresistance in Pb doped Bi-Sr-Co-O misfit-layer compound|I. Tsukada,T. Yamamoto,M. Takagi,T. Tsubone,S. Konno,K. Uchinokura###
(245603, 245603)
 Pb substitution for Bi not onlyintroduces holes into the conducting CoO2 layers but also creates acertain amount of localized spins.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi
###Ferromagnetism and large negative magnetoresistance in Pb doped Bi-Sr-Co-O misfit-layer compound|I. Tsukada,T. Yamamoto,M. Takagi,T. Tsubone,S. Konno,K. Uchinokura###
(245609, 245609)
 Pb substitution for Bi not onlyintroduces holes into the conducting CoO2 layers but also creates acertain amount of localized spins.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoO2
###Ferromagnetism and large negative magnetoresistance in Pb doped Bi-Sr-Co-O misfit-layer compound|I. Tsukada,T. Yamamoto,M. Takagi,T. Tsubone,S. Konno,K. Uchinokura###
(245626, 245628)
 Pb substitution for Bi not onlyintroduces holes into the conducting CoO2 layers but also creates acertain amount of localized spins.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Ferromagnetism and large negative magnetoresistance in Pb doped Bi-Sr-Co-O misfit-layer compound|I. Tsukada,T. Yamamoto,M. Takagi,T. Tsubone,S. Konno,K. Uchinokura###
(245666, 245666)
 Ferromagnetic transition appears at T<missing VAR> 3.2 K with small spontaneous magnetization along the c<missing VAR> axis, and around thetransition temperature large and anisotropic negative magnetoresistance wasobserved.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoO2
###Ferromagnetism and large negative magnetoresistance in Pb doped Bi-Sr-Co-O misfit-layer compound|I. Tsukada,T. Yamamoto,M. Takagi,T. Tsubone,S. Konno,K. Uchinokura###
(245749, 245751)
 This compound is the first example which shows ferromagneticlong-range order in a two-dimensional metallic hexagnonal CoO2 layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Weak localization in ferromagnets with spin-orbit interaction|V. K. Dugaev,P. Bruno,J. Barnas###
(246022, 246022)
 In the case oftwo-dimensional ferromagnets, the quantum corrections depend on themagnetization orientation with respect to the plane of the system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgCNi3
###Thermopower and thermal conductivity of superconducting perovskite $MgCNi_3$|S. Y. Li,W. Q. Mo,M. Yu,W. H. Zheng,C. H. Wang,Y. M. Xiong,R. Fan,H. S. Yang,B. M. Wu,L. Z. Cao,X. H. Chen###
(246475, 246478)
Thermopower and thermal conductivity of superconducting perovskite MgCNi3.
Featurization terminated normally.
0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 8, 'K', 1],[56.0, 10, 'K', 2],[122.0, 150, 'K', 4],[271.0, 50, 'K', 8],[318.0, 50, 'K', 9]

MgCNi3
###Thermopower and thermal conductivity of superconducting perovskite $MgCNi_3$|S. Y. Li,W. Q. Mo,M. Yu,W. H. Zheng,C. H. Wang,Y. M. Xiong,R. Fan,H. S. Yang,B. M. Wu,L. Z. Cao,X. H. Chen###
(246498, 246501)
 The thermopower and thermal conductivity of superconducting perovskiteMgCNi3 (Tc approx 8 K) have been studied.
Featurization terminated normally.
0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 8, 'K', 0],[33.0, 10, 'K', 1],[99.0, 150, 'K', 3],[248.0, 50, 'K', 7],[295.0, 50, 'K', 8]

MgCNi3
###Thermopower and thermal conductivity of superconducting perovskite $MgCNi_3$|S. Y. Li,W. Q. Mo,M. Yu,W. H. Zheng,C. H. Wang,Y. M. Xiong,R. Fan,H. S. Yang,B. M. Wu,L. Z. Cao,X. H. Chen###
(246574, 246577)
 Combining with the negative Hall coefficientreported previously, the negative thermopower definetly indicates that thecarrier in MgCNi3 is electron-type.
Featurization terminated normally.
0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 8, 'K', 2],[40.0, 10, 'K', 1],[23.0, 150, 'K', 1],[172.0, 50, 'K', 5],[219.0, 50, 'K', 6]

MgB2
###Thermopower and thermal conductivity of superconducting perovskite $MgCNi_3$|S. Y. Li,W. Q. Mo,M. Yu,W. H. Zheng,C. H. Wang,Y. M. Xiong,R. Fan,H. S. Yang,B. M. Wu,L. Z. Cao,X. H. Chen###
(246658, 246660)
 The thermal conductivity is of the order forintermetallics, larger than that of borocarbides and smaller than MgB2.
Featurization terminated normally.
0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 8, 'K', 4],[124.0, 10, 'K', 3],[58.0, 150, 'K', 1],[89.0, 50, 'K', 3],[136.0, 50, 'K', 4]

In
###Thermopower and thermal conductivity of superconducting perovskite $MgCNi_3$|S. Y. Li,W. Q. Mo,M. Yu,W. H. Zheng,C. H. Wang,Y. M. Xiong,R. Fan,H. S. Yang,B. M. Wu,L. Z. Cao,X. H. Chen###
(246663, 246663)
 Inthe normal state, the electronic contribution to the total thermal conductivityis slightly larger than the lattice contribution.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 8, 'K', 5],[129.0, 10, 'K', 4],[63.0, 150, 'K', 2],[86.0, 50, 'K', 2],[133.0, 50, 'K', 3]

MgCNi3
###Thermopower and thermal conductivity of superconducting perovskite $MgCNi_3$|S. Y. Li,W. Q. Mo,M. Yu,W. H. Zheng,C. H. Wang,Y. M. Xiong,R. Fan,H. S. Yang,B. M. Wu,L. Z. Cao,X. H. Chen###
(246714, 246717)
 The transversemagnetoresistance of MgCNi3 is also measured.
Featurization terminated normally.
0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[206.0, 8, 'K', 6],[180.0, 10, 'K', 5],[114.0, 150, 'K', 3],[32.0, 50, 'K', 1],[79.0, 50, 'K', 2]

K
###Thermopower and thermal conductivity of superconducting perovskite $MgCNi_3$|S. Y. Li,W. Q. Mo,M. Yu,W. H. Zheng,C. H. Wang,Y. M. Xiong,R. Fan,H. S. Yang,B. M. Wu,L. Z. Cao,X. H. Chen###
(246769, 246769)
 An electronic crossover occures at T<missing VAR> sim50 K, resulting in the abnormal behavior of resistivity, thermopower, andmagnetoresistance below 50 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[261.0, 8, 'K', 8],[235.0, 10, 'K', 7],[169.0, 150, 'K', 5],[20.0, 50, 'K', 1],[27.0, 50, 'K', 0]

Pr0.46Sr0.54MnO3
###Lattice coupled first order magnetoresistance transition in an A-type antiferromagnet: Pr$_{0.46}$Sr$_{0.54}$MnO$_3$|R. Mahendiran,C. Martin,A. Maignan,M. Hervieu,B. Raveau,L. Morellon,C. Marquina,B. Garcia-Landa,M. R. Ibarra###
(246829, 246835)
Lattice coupled first order magnetoresistance transition in an A-type antiferromagnet Pr0.46Sr0.54MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.10800000000000001,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.092,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 210, 'K', 1],[71.0, 215, 'K', 1],[89.0, 0, 'T', 2],[181.0, 7, 'T', 4],[195.0, 180, 'K', 4],[271.0, 180, 'K', 5],[274.0, 13.7, 'T', 5]

Pr0.46Sr0.54MnO3
###Lattice coupled first order magnetoresistance transition in an A-type antiferromagnet: Pr$_{0.46}$Sr$_{0.54}$MnO$_3$|R. Mahendiran,C. Martin,A. Maignan,M. Hervieu,B. Raveau,L. Morellon,C. Marquina,B. Garcia-Landa,M. R. Ibarra###
(246864, 246870)
 We investigated magnetic, magnetotransport and magnetostriction properties ofthe A-type antiferromagnet Pr0.46Sr0.54MnO3 which undergoes afirst order paramagnetic-antiferromagnetic transition below T<missing VAR>N  210 K whilecooling and T<missing VAR>N  215 K while warming.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.10800000000000001,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.092,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 210, 'K', 0],[36.0, 215, 'K', 0],[54.0, 0, 'T', 1],[146.0, 7, 'T', 3],[160.0, 180, 'K', 3],[236.0, 180, 'K', 4],[239.0, 13.7, 'T', 4]

N
###Lattice coupled first order magnetoresistance transition in an A-type antiferromagnet: Pr$_{0.46}$Sr$_{0.54}$MnO$_3$|R. Mahendiran,C. Martin,A. Maignan,M. Hervieu,B. Raveau,L. Morellon,C. Marquina,B. Garcia-Landa,M. R. Ibarra###
(246892, 246892)
 We investigated magnetic, magnetotransport and magnetostriction properties ofthe A-type antiferromagnet Pr0.46Sr0.54MnO3 which undergoes afirst order paramagnetic-antiferromagnetic transition below T<missing VAR>N  210 K whilecooling and T<missing VAR>N  215 K while warming.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 210, 'K', 0],[14.0, 215, 'K', 0],[32.0, 0, 'T', 1],[124.0, 7, 'T', 3],[138.0, 180, 'K', 3],[214.0, 180, 'K', 4],[217.0, 13.7, 'T', 4]

N
###Lattice coupled first order magnetoresistance transition in an A-type antiferromagnet: Pr$_{0.46}$Sr$_{0.54}$MnO$_3$|R. Mahendiran,C. Martin,A. Maignan,M. Hervieu,B. Raveau,L. Morellon,C. Marquina,B. Garcia-Landa,M. R. Ibarra###
(246904, 246904)
 We investigated magnetic, magnetotransport and magnetostriction properties ofthe A-type antiferromagnet Pr0.46Sr0.54MnO3 which undergoes afirst order paramagnetic-antiferromagnetic transition below T<missing VAR>N  210 K whilecooling and T<missing VAR>N  215 K while warming.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 210, 'K', 0],[2.0, 215, 'K', 0],[20.0, 0, 'T', 1],[112.0, 7, 'T', 3],[126.0, 180, 'K', 3],[202.0, 180, 'K', 4],[205.0, 13.7, 'T', 4]

H
###Lattice coupled first order magnetoresistance transition in an A-type antiferromagnet: Pr$_{0.46}$Sr$_{0.54}$MnO$_3$|R. Mahendiran,C. Martin,A. Maignan,M. Hervieu,B. Raveau,L. Morellon,C. Marquina,B. Garcia-Landa,M. R. Ibarra###
(246922, 246922)
 The zero field (mu0H  0 T)resistivity shows a sudden jump at T<missing VAR>N and a small bump around T<missing VAR>max 220 K (TEXTsymbol> T<missing VAR>N).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 210, 'K', 1],[16.0, 215, 'K', 1],[2.0, 0, 'T', 0],[94.0, 7, 'T', 2],[108.0, 180, 'K', 2],[184.0, 180, 'K', 3],[187.0, 13.7, 'T', 3]

N
###Lattice coupled first order magnetoresistance transition in an A-type antiferromagnet: Pr$_{0.46}$Sr$_{0.54}$MnO$_3$|R. Mahendiran,C. Martin,A. Maignan,M. Hervieu,B. Raveau,L. Morellon,C. Marquina,B. Garcia-Landa,M. R. Ibarra###
(246941, 246941)
 The zero field (mu0H  0 T)resistivity shows a sudden jump at T<missing VAR>N and a small bump around T<missing VAR>max 220 K (TEXTsymbol> T<missing VAR>N).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 210, 'K', 1],[35.0, 215, 'K', 1],[17.0, 0, 'T', 0],[75.0, 7, 'T', 2],[89.0, 180, 'K', 2],[165.0, 180, 'K', 3],[168.0, 13.7, 'T', 3]

K
###Lattice coupled first order magnetoresistance transition in an A-type antiferromagnet: Pr$_{0.46}$Sr$_{0.54}$MnO$_3$|R. Mahendiran,C. Martin,A. Maignan,M. Hervieu,B. Raveau,L. Morellon,C. Marquina,B. Garcia-Landa,M. R. Ibarra###
(246960, 246960)
 The zero field (mu0H  0 T)resistivity shows a sudden jump at T<missing VAR>N and a small bump around T<missing VAR>max 220 K (TEXTsymbol> T<missing VAR>N).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 210, 'K', 1],[54.0, 215, 'K', 1],[36.0, 0, 'T', 0],[56.0, 7, 'T', 2],[70.0, 180, 'K', 2],[146.0, 180, 'K', 3],[149.0, 13.7, 'T', 3]

N
###Lattice coupled first order magnetoresistance transition in an A-type antiferromagnet: Pr$_{0.46}$Sr$_{0.54}$MnO$_3$|R. Mahendiran,C. Martin,A. Maignan,M. Hervieu,B. Raveau,L. Morellon,C. Marquina,B. Garcia-Landa,M. R. Ibarra###
(246970, 246970)
 The zero field (mu0H  0 T)resistivity shows a sudden jump at T<missing VAR>N and a small bump around T<missing VAR>max 220 K (TEXTsymbol> T<missing VAR>N).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 210, 'K', 1],[64.0, 215, 'K', 1],[46.0, 0, 'T', 0],[46.0, 7, 'T', 2],[60.0, 180, 'K', 2],[136.0, 180, 'K', 3],[139.0, 13.7, 'T', 3]

N
###Lattice coupled first order magnetoresistance transition in an A-type antiferromagnet: Pr$_{0.46}$Sr$_{0.54}$MnO$_3$|R. Mahendiran,C. Martin,A. Maignan,M. Hervieu,B. Raveau,L. Morellon,C. Marquina,B. Garcia-Landa,M. R. Ibarra###
(246975, 246975)
 T<missing VAR>N shifts down and T<missing VAR>max shifts up withincreasing mu0H.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 210, 'K', 2],[69.0, 215, 'K', 2],[51.0, 0, 'T', 1],[41.0, 7, 'T', 1],[55.0, 180, 'K', 1],[131.0, 180, 'K', 2],[134.0, 13.7, 'T', 2]

H
###Lattice coupled first order magnetoresistance transition in an A-type antiferromagnet: Pr$_{0.46}$Sr$_{0.54}$MnO$_3$|R. Mahendiran,C. Martin,A. Maignan,M. Hervieu,B. Raveau,L. Morellon,C. Marquina,B. Garcia-Landa,M. R. Ibarra###
(246997, 246997)
 T<missing VAR>N shifts down and T<missing VAR>max shifts up withincreasing mu0H.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 210, 'K', 2],[91.0, 215, 'K', 2],[73.0, 0, 'T', 1],[19.0, 7, 'T', 1],[33.0, 180, 'K', 1],[109.0, 180, 'K', 2],[112.0, 13.7, 'T', 2]

K
###Lattice coupled first order magnetoresistance transition in an A-type antiferromagnet: Pr$_{0.46}$Sr$_{0.54}$MnO$_3$|R. Mahendiran,C. Martin,A. Maignan,M. Hervieu,B. Raveau,L. Morellon,C. Marquina,B. Garcia-Landa,M. R. Ibarra###
(247034, 247034)
 Magnetoresistance as high as -45-57 % at 7 T is found inthe temperature range 180 K-230 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 210, 'K', 3],[128.0, 215, 'K', 3],[110.0, 0, 'T', 2],[18.0, 7, 'T', 0],[4.0, 180, 'K', 0],[72.0, 180, 'K', 1],[75.0, 13.7, 'T', 1]

N
###Lattice coupled first order magnetoresistance transition in an A-type antiferromagnet: Pr$_{0.46}$Sr$_{0.54}$MnO$_3$|R. Mahendiran,C. Martin,A. Maignan,M. Hervieu,B. Raveau,L. Morellon,C. Marquina,B. Garcia-Landa,M. R. Ibarra###
(247063, 247063)
 Isothermal measurements indicate that thefield induced antiferromagnetic to ferromagnetic transition below T<missing VAR>N isaccompanied by a rapid decrease of the resistivity but increase of volume(Delta V/V  0.25 % at 180 K and 13.7 T).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 210, 'K', 4],[157.0, 215, 'K', 4],[139.0, 0, 'T', 3],[47.0, 7, 'T', 1],[33.0, 180, 'K', 1],[43.0, 180, 'K', 0],[46.0, 13.7, 'T', 0]

V/V
###Lattice coupled first order magnetoresistance transition in an A-type antiferromagnet: Pr$_{0.46}$Sr$_{0.54}$MnO$_3$|R. Mahendiran,C. Martin,A. Maignan,M. Hervieu,B. Raveau,L. Morellon,C. Marquina,B. Garcia-Landa,M. R. Ibarra###
(247096, 247098)
 Isothermal measurements indicate that thefield induced antiferromagnetic to ferromagnetic transition below T<missing VAR>N isaccompanied by a rapid decrease of the resistivity but increase of volume(Delta V/V  0.25 % at 180 K and 13.7 T).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[202.0, 210, 'K', 4],[190.0, 215, 'K', 4],[172.0, 0, 'T', 3],[80.0, 7, 'T', 1],[66.0, 180, 'K', 1],[8.0, 180, 'K', 0],[11.0, 13.7, 'T', 0]

In
###Martensitic accommodation strain and the metal-insulator transition in manganites|V. Podzorov,B. G. Kim,V. Kiryukhin,M. E. Gershenson,S-W. Cheong###
(247196, 247196)
 In this paper, we report polarized optical microscopy and electricaltransport studies of manganese oxides that reveal that the charge orderingtransition in these compounds exhibits typical signatures of a martensitictransformation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.7Sr0.3MnO3
###Magnetotransport in a bi-crystal film of La_0.7Sr_0.3MnO_3|R. Mathieu,P. Svedlindh,R. Chakalov,Z. G. Ivanov###
(247538, 247544)
Magnetotransport in a bi-crystal film of La0.7Sr0.3MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 9.2, 'deg', 1],[92.0, 100, 'grain', 3],[206.0, 6, 'T', 5]

La0.7Sr0.3MnO3
###Magnetotransport in a bi-crystal film of La_0.7Sr_0.3MnO_3|R. Mathieu,P. Svedlindh,R. Chakalov,Z. G. Ivanov###
(247561, 247567)
 Transport properties of an epitaxial film of La0.7Sr0.3MnO3 (LSMO),deposited epitaxially on a LaAlO3 bi-crystal substrate having a misorientationangle of 9.2 deg.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 9.2, 'deg', 0],[69.0, 100, 'grain', 2],[183.0, 6, 'T', 4]

O
###Magnetotransport in a bi-crystal film of La_0.7Sr_0.3MnO_3|R. Mathieu,P. Svedlindh,R. Chakalov,Z. G. Ivanov###
(247573, 247573)
 Transport properties of an epitaxial film of La0.7Sr0.3MnO3 (LSMO),deposited epitaxially on a LaAlO3 bi-crystal substrate having a misorientationangle of 9.2 deg.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 9.2, 'deg', 0],[63.0, 100, 'grain', 2],[177.0, 6, 'T', 4]

LaAlO3
###Magnetotransport in a bi-crystal film of La_0.7Sr_0.3MnO_3|R. Mathieu,P. Svedlindh,R. Chakalov,Z. G. Ivanov###
(247586, 247589)
 Transport properties of an epitaxial film of La0.7Sr0.3MnO3 (LSMO),deposited epitaxially on a LaAlO3 bi-crystal substrate having a misorientationangle of 9.2 deg.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 9.2, 'deg', 0],[47.0, 100, 'grain', 2],[161.0, 6, 'T', 4]

O
###Magnetotransport in a bi-crystal film of La_0.7Sr_0.3MnO_3|R. Mathieu,P. Svedlindh,R. Chakalov,Z. G. Ivanov###
(247686, 247686)
 Theresistivity of the sample exhibits two components; one originating from thegrain boundary regions, and one from the LSMO elements in the meander; thelatter contribution is similar to the resistivity of a reference epitaxial LSMOfilm.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 9.2, 'deg', 3],[50.0, 100, 'grain', 1],[64.0, 6, 'T', 1]

O
###Magnetotransport in a bi-crystal film of La_0.7Sr_0.3MnO_3|R. Mathieu,P. Svedlindh,R. Chakalov,Z. G. Ivanov###
(247725, 247725)
 Theresistivity of the sample exhibits two components; one originating from thegrain boundary regions, and one from the LSMO elements in the meander; thelatter contribution is similar to the resistivity of a reference epitaxial LSMOfilm.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 9.2, 'deg', 3],[89.0, 100, 'grain', 1],[25.0, 6, 'T', 1]

GaAs/GaAlAs
###Two band transport and the question of a metal-insulator transition in GaAs/GaAlAs two dimensional holes|Yuval Yaish,Oleg Prus,Evgeny Buchstab,Gidi Ben Yoseph,Uri Sivan,Iddo Ussishkin,Ady Stern###
(247872, 247877)
Two band transport and the question of a metal-insulator transition in GaAs/GaAlAs two dimensional holes.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

GaAs/AlGaAs
###Two band transport and the question of a metal-insulator transition in GaAs/GaAlAs two dimensional holes|Yuval Yaish,Oleg Prus,Evgeny Buchstab,Gidi Ben Yoseph,Uri Sivan,Iddo Ussishkin,Ady Stern###
(247902, 247907)
 The magnetotransport of two dimensional holes in a GaAs/AlGaAsheterostructure is studied experimentally and theoretically.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

At
###Two band transport and the question of a metal-insulator transition in GaAs/GaAlAs two dimensional holes|Yuval Yaish,Oleg Prus,Evgeny Buchstab,Gidi Ben Yoseph,Uri Sivan,Iddo Ussishkin,Ady Stern###
(248029, 248029)
 At lower densities, when splitting is smaller thanthe inverse elastic scattering time, the two bands effectively merge to yieldthe expected insulating characteristics and negative magnetoresistance due toweak localization and interaction corrections to the conductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La2
###A model for spin-polarized transport in perovskite manganite bi-crystal grain boundaries|R. Gunnarsson,A. Kadigrobov,Z. Ivanov###
(248611, 248612)
 We have studied the temperature dependence of low-field magnetoresistance andcurrent-voltage characteristics of a low-angle bi-crystal grain boundaryjunction in perovskite manganite La2/3Sr1/3MnO3 thin film.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr1
###A model for spin-polarized transport in perovskite manganite bi-crystal grain boundaries|R. Gunnarsson,A. Kadigrobov,Z. Ivanov###
(248615, 248616)
 We have studied the temperature dependence of low-field magnetoresistance andcurrent-voltage characteristics of a low-angle bi-crystal grain boundaryjunction in perovskite manganite La2/3Sr1/3MnO3 thin film.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnO3
###A model for spin-polarized transport in perovskite manganite bi-crystal grain boundaries|R. Gunnarsson,A. Kadigrobov,Z. Ivanov###
(248619, 248621)
 We have studied the temperature dependence of low-field magnetoresistance andcurrent-voltage characteristics of a low-angle bi-crystal grain boundaryjunction in perovskite manganite La2/3Sr1/3MnO3 thin film.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###A model for spin-polarized transport in perovskite manganite bi-crystal grain boundaries|R. Gunnarsson,A. Kadigrobov,Z. Ivanov###
(248681, 248681)
 With the use of the relation MGB propto M<missing VAR>bulksqrtMR wehave extracted the grain boundary magnetization.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###A model for spin-polarized transport in perovskite manganite bi-crystal grain boundaries|R. Gunnarsson,A. Kadigrobov,Z. Ivanov###
(248744, 248744)
 Further, we demonstrate thatthe built-in potential barrier of the grain boundary can be modelled byVbipropto M<missing VAR>bulk2 - MGB2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B2
###A model for spin-polarized transport in perovskite manganite bi-crystal grain boundaries|R. Gunnarsson,A. Kadigrobov,Z. Ivanov###
(248756, 248757)
 Further, we demonstrate thatthe built-in potential barrier of the grain boundary can be modelled byVbipropto M<missing VAR>bulk2 - MGB2.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnAs
###Structural transformation induced by magnetic field and colossal magnetoresistance response above 313 K in MnAs|J. Mira,F. Rivadulla,J. Rivas,A. Fondado,R. Caciuffo,F. Carsughi,T. Guidi,J. B. Goodenough###
(248860, 248861)
Structural transformation induced by magnetic field and colossal magnetoresistance response above 313 K in MnAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 313, 'K', 0],[69.0, 313, 'K', 1],[169.0, 322, 'K', 4],[187.0, 4, 'tesla', 4],[222.0, 310, 'K', 5]

MnAs
###Structural transformation induced by magnetic field and colossal magnetoresistance response above 313 K in MnAs|J. Mira,F. Rivadulla,J. Rivas,A. Fondado,R. Caciuffo,F. Carsughi,T. Guidi,J. B. Goodenough###
(248864, 248865)
 MnAs exhibits a first-order phase transition from a ferromagnetic, high-spinmetal NiAs-type hexagonal phase to a paramagnetic, lower-spin insulatorMnP-type orthorhombic phase at T<missing VAR>C  313 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 313, 'K', 1],[65.0, 313, 'K', 0],[165.0, 322, 'K', 3],[183.0, 4, 'tesla', 3],[218.0, 310, 'K', 4]

NiAs
###Structural transformation induced by magnetic field and colossal magnetoresistance response above 313 K in MnAs|J. Mira,F. Rivadulla,J. Rivas,A. Fondado,R. Caciuffo,F. Carsughi,T. Guidi,J. B. Goodenough###
(248893, 248894)
 MnAs exhibits a first-order phase transition from a ferromagnetic, high-spinmetal NiAs-type hexagonal phase to a paramagnetic, lower-spin insulatorMnP-type orthorhombic phase at T<missing VAR>C  313 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 313, 'K', 1],[36.0, 313, 'K', 0],[136.0, 322, 'K', 3],[154.0, 4, 'tesla', 3],[189.0, 310, 'K', 4]

MnP
###Structural transformation induced by magnetic field and colossal magnetoresistance response above 313 K in MnAs|J. Mira,F. Rivadulla,J. Rivas,A. Fondado,R. Caciuffo,F. Carsughi,T. Guidi,J. B. Goodenough###
(248916, 248917)
 MnAs exhibits a first-order phase transition from a ferromagnetic, high-spinmetal NiAs-type hexagonal phase to a paramagnetic, lower-spin insulatorMnP-type orthorhombic phase at T<missing VAR>C  313 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 313, 'K', 1],[13.0, 313, 'K', 0],[113.0, 322, 'K', 3],[131.0, 4, 'tesla', 3],[166.0, 310, 'K', 4]

C
###Structural transformation induced by magnetic field and colossal magnetoresistance response above 313 K in MnAs|J. Mira,F. Rivadulla,J. Rivas,A. Fondado,R. Caciuffo,F. Carsughi,T. Guidi,J. B. Goodenough###
(248928, 248928)
 MnAs exhibits a first-order phase transition from a ferromagnetic, high-spinmetal NiAs-type hexagonal phase to a paramagnetic, lower-spin insulatorMnP-type orthorhombic phase at T<missing VAR>C  313 K.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 313, 'K', 1],[2.0, 313, 'K', 0],[102.0, 322, 'K', 3],[120.0, 4, 'tesla', 3],[155.0, 310, 'K', 4]

B
###Structural transformation induced by magnetic field and colossal magnetoresistance response above 313 K in MnAs|J. Mira,F. Rivadulla,J. Rivas,A. Fondado,R. Caciuffo,F. Carsughi,T. Guidi,J. B. Goodenough###
(248966, 248966)
 Here, we report the results ofneutron diffraction experiments showing that an external magnetic field, B,stabilizes the hexagonal metallic phase above T<missing VAR>C.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 313, 'K', 2],[36.0, 313, 'K', 1],[64.0, 322, 'K', 2],[82.0, 4, 'tesla', 2],[117.0, 310, 'K', 3]

C
###Structural transformation induced by magnetic field and colossal magnetoresistance response above 313 K in MnAs|J. Mira,F. Rivadulla,J. Rivas,A. Fondado,R. Caciuffo,F. Carsughi,T. Guidi,J. B. Goodenough###
(248983, 248983)
 Here, we report the results ofneutron diffraction experiments showing that an external magnetic field, B,stabilizes the hexagonal metallic phase above T<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 313, 'K', 2],[53.0, 313, 'K', 1],[47.0, 322, 'K', 2],[65.0, 4, 'tesla', 2],[100.0, 310, 'K', 3]

At
###Structural transformation induced by magnetic field and colossal magnetoresistance response above 313 K in MnAs|J. Mira,F. Rivadulla,J. Rivas,A. Fondado,R. Caciuffo,F. Carsughi,T. Guidi,J. B. Goodenough###
(249029, 249029)
 At 322 K the hexagonal structure isrestored for B > 4 tesla.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 313, 'K', 4],[99.0, 313, 'K', 3],[1.0, 322, 'K', 0],[19.0, 4, 'tesla', 0],[54.0, 310, 'K', 1]

B
###Structural transformation induced by magnetic field and colossal magnetoresistance response above 313 K in MnAs|J. Mira,F. Rivadulla,J. Rivas,A. Fondado,R. Caciuffo,F. Carsughi,T. Guidi,J. B. Goodenough###
(249045, 249045)
 At 322 K the hexagonal structure isrestored for B > 4 tesla.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[189.0, 313, 'K', 4],[115.0, 313, 'K', 3],[15.0, 322, 'K', 0],[3.0, 4, 'tesla', 0],[38.0, 310, 'K', 1]

Eu6-x
###Ferromagnetism and giant magnetoresistance in the rare earth fullerides Eu6-xSrxC60|Kenji Ishii,Akihiko Fujiwara,Hiroyoshi Suematsu,Yoshihiro Kubozono###
(249173, 249176)
Ferromagnetism and giant magnetoresistance in the rare earth fullerides Eu6-xSrxC60.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[175.0, 14, 'K', 3],[264.0, 0, 'T', 5],[276.0, 1, 'K', 5],[324.0, 4, 'f', 6]

C60
###Ferromagnetism and giant magnetoresistance in the rare earth fullerides Eu6-xSrxC60|Kenji Ishii,Akihiko Fujiwara,Hiroyoshi Suematsu,Yoshihiro Kubozono###
(249178, 249179)
Ferromagnetism and giant magnetoresistance in the rare earth fullerides Eu6-xSrxC60.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[172.0, 14, 'K', 3],[261.0, 0, 'T', 5],[273.0, 1, 'K', 5],[321.0, 4, 'f', 6]

Eu6C60
###Ferromagnetism and giant magnetoresistance in the rare earth fullerides Eu6-xSrxC60|Kenji Ishii,Akihiko Fujiwara,Hiroyoshi Suematsu,Yoshihiro Kubozono###
(249212, 249215)
 We have studied crystal structure, magnetism and electric transportproperties of a europium fulleride Eu6C60 and its Sr-substituted compounds,Eu6-xSrxC60.
Featurization terminated normally.
0,0,0,0,0,0.9090909090909091,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.09090909090909091,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 14, 'K', 2],[225.0, 0, 'T', 4],[237.0, 1, 'K', 4],[285.0, 4, 'f', 5]

Sr
###Ferromagnetism and giant magnetoresistance in the rare earth fullerides Eu6-xSrxC60|Kenji Ishii,Akihiko Fujiwara,Hiroyoshi Suematsu,Yoshihiro Kubozono###
(249221, 249221)
 We have studied crystal structure, magnetism and electric transportproperties of a europium fulleride Eu6C60 and its Sr-substituted compounds,Eu6-xSrxC60.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 14, 'K', 2],[219.0, 0, 'T', 4],[231.0, 1, 'K', 4],[279.0, 4, 'f', 5]

Eu6-x
###Ferromagnetism and giant magnetoresistance in the rare earth fullerides Eu6-xSrxC60|Kenji Ishii,Akihiko Fujiwara,Hiroyoshi Suematsu,Yoshihiro Kubozono###
(249229, 249232)
 We have studied crystal structure, magnetism and electric transportproperties of a europium fulleride Eu6C60 and its Sr-substituted compounds,Eu6-xSrxC60.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[119.0, 14, 'K', 2],[208.0, 0, 'T', 4],[220.0, 1, 'K', 4],[268.0, 4, 'f', 5]

C60
###Ferromagnetism and giant magnetoresistance in the rare earth fullerides Eu6-xSrxC60|Kenji Ishii,Akihiko Fujiwara,Hiroyoshi Suematsu,Yoshihiro Kubozono###
(249234, 249235)
 We have studied crystal structure, magnetism and electric transportproperties of a europium fulleride Eu6C60 and its Sr-substituted compounds,Eu6-xSrxC60.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 14, 'K', 2],[205.0, 0, 'T', 4],[217.0, 1, 'K', 4],[265.0, 4, 'f', 5]

C60
###Ferromagnetism and giant magnetoresistance in the rare earth fullerides Eu6-xSrxC60|Kenji Ishii,Akihiko Fujiwara,Hiroyoshi Suematsu,Yoshihiro Kubozono###
(249263, 249264)
 They have a bcc structure, which is an isostructure of other M<missing VAR>6C60(M<missing VAR> represents an alkali atom or an alkaline earth atom).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 14, 'K', 1],[176.0, 0, 'T', 3],[188.0, 1, 'K', 3],[236.0, 4, 'f', 4]

S
###Ferromagnetism and giant magnetoresistance in the rare earth fullerides Eu6-xSrxC60|Kenji Ishii,Akihiko Fujiwara,Hiroyoshi Suematsu,Yoshihiro Kubozono###
(249319, 249319)
 Magnetic measurementsrevealed that magnetic moment is ascribed to the divalent europium atom with S 7/2 spin, and a ferromagnetic transition was observed at T<missing VAR>C  10 - 14 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 14, 'K', 0],[121.0, 0, 'T', 2],[133.0, 1, 'K', 2],[181.0, 4, 'f', 3]

C
###Ferromagnetism and giant magnetoresistance in the rare earth fullerides Eu6-xSrxC60|Kenji Ishii,Akihiko Fujiwara,Hiroyoshi Suematsu,Yoshihiro Kubozono###
(249345, 249345)
 Magnetic measurementsrevealed that magnetic moment is ascribed to the divalent europium atom with S 7/2 spin, and a ferromagnetic transition was observed at T<missing VAR>C  10 - 14 K.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 14, 'K', 0],[95.0, 0, 'T', 2],[107.0, 1, 'K', 2],[155.0, 4, 'f', 3]

In
###Ferromagnetism and giant magnetoresistance in the rare earth fullerides Eu6-xSrxC60|Kenji Ishii,Akihiko Fujiwara,Hiroyoshi Suematsu,Yoshihiro Kubozono###
(249354, 249354)
 InEu6C60, we also confirm the ferromagnetic transition by heat capacitymeasurement.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 14, 'K', 1],[86.0, 0, 'T', 1],[98.0, 1, 'K', 1],[146.0, 4, 'f', 2]

Eu6C60
###Ferromagnetism and giant magnetoresistance in the rare earth fullerides Eu6-xSrxC60|Kenji Ishii,Akihiko Fujiwara,Hiroyoshi Suematsu,Yoshihiro Kubozono###
(249357, 249360)
 InEu6C60, we also confirm the ferromagnetic transition by heat capacitymeasurement.
Featurization terminated normally.
0,0,0,0,0,0.9090909090909091,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.09090909090909091,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 14, 'K', 1],[80.0, 0, 'T', 1],[92.0, 1, 'K', 1],[140.0, 4, 'f', 2]

Eu6-x
###Ferromagnetism and giant magnetoresistance in the rare earth fullerides Eu6-xSrxC60|Kenji Ishii,Akihiko Fujiwara,Hiroyoshi Suematsu,Yoshihiro Kubozono###
(249393, 249396)
 The striking feature in Eu6-xSrxC60 is very large negativemagnetoresistance at low temperature; the resistivity ratio rho(H  9T)/rho(H  0 T) reaches almost 10-3 at 1 K in Eu6C60.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[42.0, 14, 'K', 2],[44.0, 0, 'T', 0],[56.0, 1, 'K', 0],[104.0, 4, 'f', 1]

C60
###Ferromagnetism and giant magnetoresistance in the rare earth fullerides Eu6-xSrxC60|Kenji Ishii,Akihiko Fujiwara,Hiroyoshi Suematsu,Yoshihiro Kubozono###
(249398, 249399)
 The striking feature in Eu6-xSrxC60 is very large negativemagnetoresistance at low temperature; the resistivity ratio rho(H  9T)/rho(H  0 T) reaches almost 10-3 at 1 K in Eu6C60.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 14, 'K', 2],[41.0, 0, 'T', 0],[53.0, 1, 'K', 0],[101.0, 4, 'f', 1]

H
###Ferromagnetism and giant magnetoresistance in the rare earth fullerides Eu6-xSrxC60|Kenji Ishii,Akihiko Fujiwara,Hiroyoshi Suematsu,Yoshihiro Kubozono###
(249427, 249427)
 The striking feature in Eu6-xSrxC60 is very large negativemagnetoresistance at low temperature; the resistivity ratio rho(H  9T)/rho(H  0 T) reaches almost 10-3 at 1 K in Eu6C60.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 14, 'K', 2],[13.0, 0, 'T', 0],[25.0, 1, 'K', 0],[73.0, 4, 'f', 1]

H
###Ferromagnetism and giant magnetoresistance in the rare earth fullerides Eu6-xSrxC60|Kenji Ishii,Akihiko Fujiwara,Hiroyoshi Suematsu,Yoshihiro Kubozono###
(249438, 249438)
 The striking feature in Eu6-xSrxC60 is very large negativemagnetoresistance at low temperature; the resistivity ratio rho(H  9T)/rho(H  0 T) reaches almost 10-3 at 1 K in Eu6C60.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 14, 'K', 2],[2.0, 0, 'T', 0],[14.0, 1, 'K', 0],[62.0, 4, 'f', 1]

Eu6C60
###Ferromagnetism and giant magnetoresistance in the rare earth fullerides Eu6-xSrxC60|Kenji Ishii,Akihiko Fujiwara,Hiroyoshi Suematsu,Yoshihiro Kubozono###
(249456, 249459)
 The striking feature in Eu6-xSrxC60 is very large negativemagnetoresistance at low temperature; the resistivity ratio rho(H  9T)/rho(H  0 T) reaches almost 10-3 at 1 K in Eu6C60.
Featurization terminated normally.
0,0,0,0,0,0.9090909090909091,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.09090909090909091,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 14, 'K', 2],[16.0, 0, 'T', 0],[4.0, 1, 'K', 0],[41.0, 4, 'f', 1]

C60
###Ferromagnetism and giant magnetoresistance in the rare earth fullerides Eu6-xSrxC60|Kenji Ishii,Akihiko Fujiwara,Hiroyoshi Suematsu,Yoshihiro Kubozono###
(249496, 249497)
 Such largemagnetoresistance is the manifestation of a strong pi-f<missing VAR> interaction betweenconduction carriers on C60 and 4f electrons of Eu.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 14, 'K', 3],[56.0, 0, 'T', 1],[44.0, 1, 'K', 1],[3.0, 4, 'f', 0]

Eu
###Ferromagnetism and giant magnetoresistance in the rare earth fullerides Eu6-xSrxC60|Kenji Ishii,Akihiko Fujiwara,Hiroyoshi Suematsu,Yoshihiro Kubozono###
(249506, 249506)
 Such largemagnetoresistance is the manifestation of a strong pi-f<missing VAR> interaction betweenconduction carriers on C60 and 4f electrons of Eu.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 14, 'K', 3],[66.0, 0, 'T', 1],[54.0, 1, 'K', 1],[6.0, 4, 'f', 0]

Cu
###Martensitic transition and magnetoresistance in a Cu-Al-Mn shape memory alloy. Influence of aging|Jordi Marcos,Antoni Planes,Lluís Mañosa,Amílcar Labarta,Bart Jan Hattink###
(249529, 249529)
Martensitic transition and magnetoresistance in a Cu-Al-Mn shape memory alloy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Al
###Martensitic transition and magnetoresistance in a Cu-Al-Mn shape memory alloy. Influence of aging|Jordi Marcos,Antoni Planes,Lluís Mañosa,Amílcar Labarta,Bart Jan Hattink###
(249531, 249531)
Martensitic transition and magnetoresistance in a Cu-Al-Mn shape memory alloy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Martensitic transition and magnetoresistance in a Cu-Al-Mn shape memory alloy. Influence of aging|Jordi Marcos,Antoni Planes,Lluís Mañosa,Amílcar Labarta,Bart Jan Hattink###
(249533, 249533)
Martensitic transition and magnetoresistance in a Cu-Al-Mn shape memory alloy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Martensitic transition and magnetoresistance in a Cu-Al-Mn shape memory alloy. Influence of aging|Jordi Marcos,Antoni Planes,Lluís Mañosa,Amílcar Labarta,Bart Jan Hattink###
(249598, 249598)
 We have studied the effect of ageing within the miscibility gap on theelectric, magnetic and thermodynamic properties of a non-stoichiometric HeuslerCu-Al-Mn shape-memory alloy, which undergoes a martensitic transition from abcc-based (beta-phase) towards a close-packed structure (M<missing VAR>-phase).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Al
###Martensitic transition and magnetoresistance in a Cu-Al-Mn shape memory alloy. Influence of aging|Jordi Marcos,Antoni Planes,Lluís Mañosa,Amílcar Labarta,Bart Jan Hattink###
(249600, 249600)
 We have studied the effect of ageing within the miscibility gap on theelectric, magnetic and thermodynamic properties of a non-stoichiometric HeuslerCu-Al-Mn shape-memory alloy, which undergoes a martensitic transition from abcc-based (beta-phase) towards a close-packed structure (M<missing VAR>-phase).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Martensitic transition and magnetoresistance in a Cu-Al-Mn shape memory alloy. Influence of aging|Jordi Marcos,Antoni Planes,Lluís Mañosa,Amílcar Labarta,Bart Jan Hattink###
(249602, 249602)
 We have studied the effect of ageing within the miscibility gap on theelectric, magnetic and thermodynamic properties of a non-stoichiometric HeuslerCu-Al-Mn shape-memory alloy, which undergoes a martensitic transition from abcc-based (beta-phase) towards a close-packed structure (M<missing VAR>-phase).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Martensitic transition and magnetoresistance in a Cu-Al-Mn shape memory alloy. Influence of aging|Jordi Marcos,Antoni Planes,Lluís Mañosa,Amílcar Labarta,Bart Jan Hattink###
(249728, 249728)
 This magnetoresistive effect has been associated with theexistence of Mn-rich clusters with the Cu2AlMn-structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu2AlMn
###Martensitic transition and magnetoresistance in a Cu-Al-Mn shape memory alloy. Influence of aging|Jordi Marcos,Antoni Planes,Lluís Mañosa,Amílcar Labarta,Bart Jan Hattink###
(249738, 249741)
 This magnetoresistive effect has been associated with theexistence of Mn-rich clusters with the Cu2AlMn-structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu2MnAl
###Martensitic transition and magnetoresistance in a Cu-Al-Mn shape memory alloy. Influence of aging|Jordi Marcos,Antoni Planes,Lluís Mañosa,Amílcar Labarta,Bart Jan Hattink###
(249858, 249861)
 Such a decrease is due to the increasing amount ofCu2MnAl-rich domains that do not transform martensitically.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

KKY
###Electromodulation of the Magnetoresistance in Diluted Magnetic Semiconductors Based Heterostructures|M. P. López-Sancho,M. C. Muñoz,L. Brey###
(249963, 249965)
 We findthat there is a R<missing VAR>KKY-type exchange coupling between the magnetic layers thatoscilles between ferromagnetic and antiferromagnetic as a function of thedifferent parameters in the problem.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SWCN
###Effect of Contact Interfaces on Quantum Conductance of Armchair Nanotubes|S. Krompiewski###
(250208, 250211)
 Effect of contact interfaces, between metallic single-wall carbon nanotubes(SWCNT) and external electrodes made also of nanotubes, on the electricalconductance is studied.
Featurization terminated normally.
0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SWCN
###Effect of Contact Interfaces on Quantum Conductance of Armchair Nanotubes|S. Krompiewski###
(250349, 250352)
 The studies are carried out within the coherenttransport regime and are focused on (i) evolution from conductancequantization to resonant tunneling, (ii) SWCNTs length effects and (iii)magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SWCN
###Effect of Contact Interfaces on Quantum Conductance of Armchair Nanotubes|S. Krompiewski###
(250462, 250465)
 Additionally, the present approach provides aninsight into magnetoresistance dependence of SWCNTs on conditions at thecontact interface.
Featurization terminated normally.
0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Magnetic Flux Trapping in Granular HTSC near Superconducting Transition|A. A. Sukhanov,V. I. Omelchenko,G. A. Orlova###
(250500, 250500)
Magnetic Flux Trapping in Granular HT<missing VAR>SC near Superconducting Transition.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 50, 'microns', 2]

SC
###Magnetic Flux Trapping in Granular HTSC near Superconducting Transition|A. A. Sukhanov,V. I. Omelchenko,G. A. Orlova###
(250502, 250503)
Magnetic Flux Trapping in Granular HT<missing VAR>SC near Superconducting Transition.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 50, 'microns', 2]

(Pb)Bi
###Magnetic Flux Trapping in Granular HTSC near Superconducting Transition|A. A. Sukhanov,V. I. Omelchenko,G. A. Orlova###
(250545, 250548)
 The temperature and field dependences of the trapped magnetic fields and ofthe frozen magnetoresistance of (Pb)Bi-Sr-Ca-Cu-O ceramics and Bi-basedmagnetron films are investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 50, 'microns', 1]

Sr
###Magnetic Flux Trapping in Granular HTSC near Superconducting Transition|A. A. Sukhanov,V. I. Omelchenko,G. A. Orlova###
(250550, 250550)
 The temperature and field dependences of the trapped magnetic fields and ofthe frozen magnetoresistance of (Pb)Bi-Sr-Ca-Cu-O ceramics and Bi-basedmagnetron films are investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 50, 'microns', 1]

Ca
###Magnetic Flux Trapping in Granular HTSC near Superconducting Transition|A. A. Sukhanov,V. I. Omelchenko,G. A. Orlova###
(250552, 250552)
 The temperature and field dependences of the trapped magnetic fields and ofthe frozen magnetoresistance of (Pb)Bi-Sr-Ca-Cu-O ceramics and Bi-basedmagnetron films are investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 50, 'microns', 1]

Cu
###Magnetic Flux Trapping in Granular HTSC near Superconducting Transition|A. A. Sukhanov,V. I. Omelchenko,G. A. Orlova###
(250554, 250554)
 The temperature and field dependences of the trapped magnetic fields and ofthe frozen magnetoresistance of (Pb)Bi-Sr-Ca-Cu-O ceramics and Bi-basedmagnetron films are investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 50, 'microns', 1]

O
###Magnetic Flux Trapping in Granular HTSC near Superconducting Transition|A. A. Sukhanov,V. I. Omelchenko,G. A. Orlova###
(250556, 250556)
 The temperature and field dependences of the trapped magnetic fields and ofthe frozen magnetoresistance of (Pb)Bi-Sr-Ca-Cu-O ceramics and Bi-basedmagnetron films are investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 50, 'microns', 1]

Bi
###Magnetic Flux Trapping in Granular HTSC near Superconducting Transition|A. A. Sukhanov,V. I. Omelchenko,G. A. Orlova###
(250562, 250562)
 The temperature and field dependences of the trapped magnetic fields and ofthe frozen magnetoresistance of (Pb)Bi-Sr-Ca-Cu-O ceramics and Bi-basedmagnetron films are investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 50, 'microns', 1]

Bi
###Magnetic Flux Trapping in Granular HTSC near Superconducting Transition|A. A. Sukhanov,V. I. Omelchenko,G. A. Orlova###
(250599, 250599)
 It is found that in the resistive transitionregion of granular Bi-HT<missing VAR>SC the trapped magnetic fields become highlyinhomogeneous and alternating in sign at scale of less than 50 microns.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 50, 'microns', 0]

H
###Magnetic Flux Trapping in Granular HTSC near Superconducting Transition|A. A. Sukhanov,V. I. Omelchenko,G. A. Orlova###
(250601, 250601)
 It is found that in the resistive transitionregion of granular Bi-HT<missing VAR>SC the trapped magnetic fields become highlyinhomogeneous and alternating in sign at scale of less than 50 microns.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 50, 'microns', 0]

SC
###Magnetic Flux Trapping in Granular HTSC near Superconducting Transition|A. A. Sukhanov,V. I. Omelchenko,G. A. Orlova###
(250603, 250604)
 It is found that in the resistive transitionregion of granular Bi-HT<missing VAR>SC the trapped magnetic fields become highlyinhomogeneous and alternating in sign at scale of less than 50 microns.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 50, 'microns', 0]

La1-xCa
###Anomalous Hall Effect of Calcium-doped Lanthanum Cobaltite Films|S. A. Baily,M. B. Salamon###
(250854, 250858)
 The Hall resistivity, magnetoresistance, and magnetization ofLa1-xCax<missing VAR>CoO3 epitaxial films with x<missing VAR> between 0.25 and 0.4 grown onlanthanum aluminate were measured in fields up to 7 T.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[15.0, 0.25, 'and', 0],[16.0, 0.4, 'grown', 0],[36.0, 7, 'T', 0],[64.0, 100, 'K', 2],[75.0, 0.4, 'films', 2]

CoO3
###Anomalous Hall Effect of Calcium-doped Lanthanum Cobaltite Films|S. A. Baily,M. B. Salamon###
(250860, 250862)
 The Hall resistivity, magnetoresistance, and magnetization ofLa1-xCax<missing VAR>CoO3 epitaxial films with x<missing VAR> between 0.25 and 0.4 grown onlanthanum aluminate were measured in fields up to 7 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 0.25, 'and', 0],[12.0, 0.4, 'grown', 0],[32.0, 7, 'T', 0],[60.0, 100, 'K', 2],[71.0, 0.4, 'films', 2]

At
###Anomalous Hall Effect of Calcium-doped Lanthanum Cobaltite Films|S. A. Baily,M. B. Salamon###
(250953, 250953)
 At lowtemperature the Hall resistivity remains large and essentially fieldindependent in these films, except for a sign change at the coercive field thatis more abrupt than the switching of the magnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 0.25, 'and', 3],[79.0, 0.4, 'grown', 3],[59.0, 7, 'T', 3],[31.0, 100, 'K', 1],[20.0, 0.4, 'films', 1]

La2
###Low frequency 1/f noise in doped manganite grain-boundary junctions|J. B. Philipp,L. Alff,A. Marx,R. Gross###
(251213, 251214)
 We have performed a systematic analysis of the low frequency 1/f<missing VAR>-noise insingle grain boundary junctions in the colossal magnetoresistance materialLa2/3Ca1/3MnO3-delta.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 300, '%', 1],[83.0, 4.2, 'K', 1],[234.0, 4.2, 'K', 4]

Ca1
###Low frequency 1/f noise in doped manganite grain-boundary junctions|J. B. Philipp,L. Alff,A. Marx,R. Gross###
(251217, 251218)
 We have performed a systematic analysis of the low frequency 1/f<missing VAR>-noise insingle grain boundary junctions in the colossal magnetoresistance materialLa2/3Ca1/3MnO3-delta.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 300, '%', 1],[79.0, 4.2, 'K', 1],[230.0, 4.2, 'K', 4]

MnO3
###Low frequency 1/f noise in doped manganite grain-boundary junctions|J. B. Philipp,L. Alff,A. Marx,R. Gross###
(251221, 251223)
 We have performed a systematic analysis of the low frequency 1/f<missing VAR>-noise insingle grain boundary junctions in the colossal magnetoresistance materialLa2/3Ca1/3MnO3-delta.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 300, '%', 1],[74.0, 4.2, 'K', 1],[225.0, 4.2, 'K', 4]

La2
###Low frequency 1/f noise in doped manganite grain-boundary junctions|J. B. Philipp,L. Alff,A. Marx,R. Gross###
(251245, 251246)
 The grain boundary junctions were formed inepitaxial La2/3Ca1/3MnO3-delta films deposited on SrTiO3 bicrystalsubstrates and show a large tunneling magnetoresistance of up to 300% at 4.2 Kas well as ideal, rectangular shaped resistance versus applied magnetic fieldcurves.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 300, '%', 0],[51.0, 4.2, 'K', 0],[202.0, 4.2, 'K', 3]

Ca1
###Low frequency 1/f noise in doped manganite grain-boundary junctions|J. B. Philipp,L. Alff,A. Marx,R. Gross###
(251249, 251250)
 The grain boundary junctions were formed inepitaxial La2/3Ca1/3MnO3-delta films deposited on SrTiO3 bicrystalsubstrates and show a large tunneling magnetoresistance of up to 300% at 4.2 Kas well as ideal, rectangular shaped resistance versus applied magnetic fieldcurves.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 300, '%', 0],[47.0, 4.2, 'K', 0],[198.0, 4.2, 'K', 3]

MnO3
###Low frequency 1/f noise in doped manganite grain-boundary junctions|J. B. Philipp,L. Alff,A. Marx,R. Gross###
(251253, 251255)
 The grain boundary junctions were formed inepitaxial La2/3Ca1/3MnO3-delta films deposited on SrTiO3 bicrystalsubstrates and show a large tunneling magnetoresistance of up to 300% at 4.2 Kas well as ideal, rectangular shaped resistance versus applied magnetic fieldcurves.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 300, '%', 0],[42.0, 4.2, 'K', 0],[193.0, 4.2, 'K', 3]

SrTiO3
###Low frequency 1/f noise in doped manganite grain-boundary junctions|J. B. Philipp,L. Alff,A. Marx,R. Gross###
(251265, 251268)
 The grain boundary junctions were formed inepitaxial La2/3Ca1/3MnO3-delta films deposited on SrTiO3 bicrystalsubstrates and show a large tunneling magnetoresistance of up to 300% at 4.2 Kas well as ideal, rectangular shaped resistance versus applied magnetic fieldcurves.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 300, '%', 0],[29.0, 4.2, 'K', 0],[180.0, 4.2, 'K', 3]

C
###Low frequency 1/f noise in doped manganite grain-boundary junctions|J. B. Philipp,L. Alff,A. Marx,R. Gross###
(251336, 251336)
 Below the Curie temperature T<missing VAR>C the measured 1/f<missing VAR> noise is dominated bythe grain boundary.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 300, '%', 1],[39.0, 4.2, 'K', 1],[112.0, 4.2, 'K', 2]

At
###Low frequency 1/f noise in doped manganite grain-boundary junctions|J. B. Philipp,L. Alff,A. Marx,R. Gross###
(251447, 251447)
 At 4.2 K additional temporallyunstable Lorentzian components show up in the noise spectra that are mostlikely caused by fluctuating clusters of interacting magnetic moments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 300, '%', 3],[150.0, 4.2, 'K', 3],[1.0, 4.2, 'K', 0]

La
###Structure, electric and magnetic properties of the electron-doped manganese oxide: La{sub(1-x)}Te{sub(x)}MnO{sub(3)}(x=0.1, 0.15)|Guotai Tan,Shouyu Dai,Ping Duan,Huibin Lu,Yueliang Zhou,Zhenghao Chen###
(251565, 251565)
Structure, electric and magnetic properties of the electron-doped manganese oxide Lasub(1-x)Tesub(x)MnOsub(3)(x<missing VAR>0.1, 0.15).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 0.1, ',', 0],[67.0, 0.1, ',', 1],[291.0, 240, 'K', 6],[294.0, 255, 'K', 6],[299.0, 0.1, ',', 6],[302.0, 0.15, ',', 6],[340.0, 51, '%', 7],[344.0, 200, 'K', 7],[360.0, 40, 'kOe', 7]

Te
###Structure, electric and magnetic properties of the electron-doped manganese oxide: La{sub(1-x)}Te{sub(x)}MnO{sub(3)}(x=0.1, 0.15)|Guotai Tan,Shouyu Dai,Ping Duan,Huibin Lu,Yueliang Zhou,Zhenghao Chen###
(251572, 251572)
Structure, electric and magnetic properties of the electron-doped manganese oxide Lasub(1-x)Tesub(x)MnOsub(3)(x<missing VAR>0.1, 0.15).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 0.1, ',', 0],[60.0, 0.1, ',', 1],[284.0, 240, 'K', 6],[287.0, 255, 'K', 6],[292.0, 0.1, ',', 6],[295.0, 0.15, ',', 6],[333.0, 51, '%', 7],[337.0, 200, 'K', 7],[353.0, 40, 'kOe', 7]

MnO
###Structure, electric and magnetic properties of the electron-doped manganese oxide: La{sub(1-x)}Te{sub(x)}MnO{sub(3)}(x=0.1, 0.15)|Guotai Tan,Shouyu Dai,Ping Duan,Huibin Lu,Yueliang Zhou,Zhenghao Chen###
(251577, 251578)
Structure, electric and magnetic properties of the electron-doped manganese oxide Lasub(1-x)Tesub(x)MnOsub(3)(x<missing VAR>0.1, 0.15).
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 0.1, ',', 0],[54.0, 0.1, ',', 1],[278.0, 240, 'K', 6],[281.0, 255, 'K', 6],[286.0, 0.1, ',', 6],[289.0, 0.15, ',', 6],[327.0, 51, '%', 7],[331.0, 200, 'K', 7],[347.0, 40, 'kOe', 7]

In
###Structure, electric and magnetic properties of the electron-doped manganese oxide: La{sub(1-x)}Te{sub(x)}MnO{sub(3)}(x=0.1, 0.15)|Guotai Tan,Shouyu Dai,Ping Duan,Huibin Lu,Yueliang Zhou,Zhenghao Chen###
(251592, 251592)
 In this letter, the electrical and magnetic properties ofLasub(1-x)Tesub(x)MnOsub(3)(x<missing VAR>0.1, 0.15), which is a new material andshows good colossal magnetoresistance (CMR) behavior, have been investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 0.1, ',', 1],[40.0, 0.1, ',', 0],[264.0, 240, 'K', 5],[267.0, 255, 'K', 5],[272.0, 0.1, ',', 5],[275.0, 0.15, ',', 5],[313.0, 51, '%', 6],[317.0, 200, 'K', 6],[333.0, 40, 'kOe', 6]

La
###Structure, electric and magnetic properties of the electron-doped manganese oxide: La{sub(1-x)}Te{sub(x)}MnO{sub(3)}(x=0.1, 0.15)|Guotai Tan,Shouyu Dai,Ping Duan,Huibin Lu,Yueliang Zhou,Zhenghao Chen###
(251612, 251612)
 In this letter, the electrical and magnetic properties ofLasub(1-x)Tesub(x)MnOsub(3)(x<missing VAR>0.1, 0.15), which is a new material andshows good colossal magnetoresistance (CMR) behavior, have been investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 0.1, ',', 1],[20.0, 0.1, ',', 0],[244.0, 240, 'K', 5],[247.0, 255, 'K', 5],[252.0, 0.1, ',', 5],[255.0, 0.15, ',', 5],[293.0, 51, '%', 6],[297.0, 200, 'K', 6],[313.0, 40, 'kOe', 6]

Te
###Structure, electric and magnetic properties of the electron-doped manganese oxide: La{sub(1-x)}Te{sub(x)}MnO{sub(3)}(x=0.1, 0.15)|Guotai Tan,Shouyu Dai,Ping Duan,Huibin Lu,Yueliang Zhou,Zhenghao Chen###
(251619, 251619)
 In this letter, the electrical and magnetic properties ofLasub(1-x)Tesub(x)MnOsub(3)(x<missing VAR>0.1, 0.15), which is a new material andshows good colossal magnetoresistance (CMR) behavior, have been investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 0.1, ',', 1],[13.0, 0.1, ',', 0],[237.0, 240, 'K', 5],[240.0, 255, 'K', 5],[245.0, 0.1, ',', 5],[248.0, 0.15, ',', 5],[286.0, 51, '%', 6],[290.0, 200, 'K', 6],[306.0, 40, 'kOe', 6]

MnO
###Structure, electric and magnetic properties of the electron-doped manganese oxide: La{sub(1-x)}Te{sub(x)}MnO{sub(3)}(x=0.1, 0.15)|Guotai Tan,Shouyu Dai,Ping Duan,Huibin Lu,Yueliang Zhou,Zhenghao Chen###
(251624, 251625)
 In this letter, the electrical and magnetic properties ofLasub(1-x)Tesub(x)MnOsub(3)(x<missing VAR>0.1, 0.15), which is a new material andshows good colossal magnetoresistance (CMR) behavior, have been investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 0.1, ',', 1],[7.0, 0.1, ',', 0],[231.0, 240, 'K', 5],[234.0, 255, 'K', 5],[239.0, 0.1, ',', 5],[242.0, 0.15, ',', 5],[280.0, 51, '%', 6],[284.0, 200, 'K', 6],[300.0, 40, 'kOe', 6]

C
###Structure, electric and magnetic properties of the electron-doped manganese oxide: La{sub(1-x)}Te{sub(x)}MnO{sub(3)}(x=0.1, 0.15)|Guotai Tan,Shouyu Dai,Ping Duan,Huibin Lu,Yueliang Zhou,Zhenghao Chen###
(251661, 251661)
 In this letter, the electrical and magnetic properties ofLasub(1-x)Tesub(x)MnOsub(3)(x<missing VAR>0.1, 0.15), which is a new material andshows good colossal magnetoresistance (CMR) behavior, have been investigated.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 0.1, ',', 1],[29.0, 0.1, ',', 0],[195.0, 240, 'K', 5],[198.0, 255, 'K', 5],[203.0, 0.1, ',', 5],[206.0, 0.15, ',', 5],[244.0, 51, '%', 6],[248.0, 200, 'K', 6],[264.0, 40, 'kOe', 6]

In
###Structure, electric and magnetic properties of the electron-doped manganese oxide: La{sub(1-x)}Te{sub(x)}MnO{sub(3)}(x=0.1, 0.15)|Guotai Tan,Shouyu Dai,Ping Duan,Huibin Lu,Yueliang Zhou,Zhenghao Chen###
(251688, 251688)
 In this materical, Te replaced apart of La ions, which induced the lattice cell constriction and Mn-O-Mn bondangle widening.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 0.1, ',', 3],[56.0, 0.1, ',', 2],[168.0, 240, 'K', 3],[171.0, 255, 'K', 3],[176.0, 0.1, ',', 3],[179.0, 0.15, ',', 3],[217.0, 51, '%', 4],[221.0, 200, 'K', 4],[237.0, 40, 'kOe', 4]

Te
###Structure, electric and magnetic properties of the electron-doped manganese oxide: La{sub(1-x)}Te{sub(x)}MnO{sub(3)}(x=0.1, 0.15)|Guotai Tan,Shouyu Dai,Ping Duan,Huibin Lu,Yueliang Zhou,Zhenghao Chen###
(251695, 251695)
 In this materical, Te replaced apart of La ions, which induced the lattice cell constriction and Mn-O-Mn bondangle widening.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 0.1, ',', 3],[63.0, 0.1, ',', 2],[161.0, 240, 'K', 3],[164.0, 255, 'K', 3],[169.0, 0.1, ',', 3],[172.0, 0.15, ',', 3],[210.0, 51, '%', 4],[214.0, 200, 'K', 4],[230.0, 40, 'kOe', 4]

La
###Structure, electric and magnetic properties of the electron-doped manganese oxide: La{sub(1-x)}Te{sub(x)}MnO{sub(3)}(x=0.1, 0.15)|Guotai Tan,Shouyu Dai,Ping Duan,Huibin Lu,Yueliang Zhou,Zhenghao Chen###
(251706, 251706)
 In this materical, Te replaced apart of La ions, which induced the lattice cell constriction and Mn-O-Mn bondangle widening.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 0.1, ',', 3],[74.0, 0.1, ',', 2],[150.0, 240, 'K', 3],[153.0, 255, 'K', 3],[158.0, 0.1, ',', 3],[161.0, 0.15, ',', 3],[199.0, 51, '%', 4],[203.0, 200, 'K', 4],[219.0, 40, 'kOe', 4]

Mn
###Structure, electric and magnetic properties of the electron-doped manganese oxide: La{sub(1-x)}Te{sub(x)}MnO{sub(3)}(x=0.1, 0.15)|Guotai Tan,Shouyu Dai,Ping Duan,Huibin Lu,Yueliang Zhou,Zhenghao Chen###
(251725, 251725)
 In this materical, Te replaced apart of La ions, which induced the lattice cell constriction and Mn-O-Mn bondangle widening.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 0.1, ',', 3],[93.0, 0.1, ',', 2],[131.0, 240, 'K', 3],[134.0, 255, 'K', 3],[139.0, 0.1, ',', 3],[142.0, 0.15, ',', 3],[180.0, 51, '%', 4],[184.0, 200, 'K', 4],[200.0, 40, 'kOe', 4]

O
###Structure, electric and magnetic properties of the electron-doped manganese oxide: La{sub(1-x)}Te{sub(x)}MnO{sub(3)}(x=0.1, 0.15)|Guotai Tan,Shouyu Dai,Ping Duan,Huibin Lu,Yueliang Zhou,Zhenghao Chen###
(251727, 251727)
 In this materical, Te replaced apart of La ions, which induced the lattice cell constriction and Mn-O-Mn bondangle widening.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 0.1, ',', 3],[95.0, 0.1, ',', 2],[129.0, 240, 'K', 3],[132.0, 255, 'K', 3],[137.0, 0.1, ',', 3],[140.0, 0.15, ',', 3],[178.0, 51, '%', 4],[182.0, 200, 'K', 4],[198.0, 40, 'kOe', 4]

Mn
###Structure, electric and magnetic properties of the electron-doped manganese oxide: La{sub(1-x)}Te{sub(x)}MnO{sub(3)}(x=0.1, 0.15)|Guotai Tan,Shouyu Dai,Ping Duan,Huibin Lu,Yueliang Zhou,Zhenghao Chen###
(251729, 251729)
 In this materical, Te replaced apart of La ions, which induced the lattice cell constriction and Mn-O-Mn bondangle widening.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 0.1, ',', 3],[97.0, 0.1, ',', 2],[127.0, 240, 'K', 3],[130.0, 255, 'K', 3],[135.0, 0.1, ',', 3],[138.0, 0.15, ',', 3],[176.0, 51, '%', 4],[180.0, 200, 'K', 4],[196.0, 40, 'kOe', 4]

S
###Structure, electric and magnetic properties of the electron-doped manganese oxide: La{sub(1-x)}Te{sub(x)}MnO{sub(3)}(x=0.1, 0.15)|Guotai Tan,Shouyu Dai,Ping Duan,Huibin Lu,Yueliang Zhou,Zhenghao Chen###
(251750, 251750)
 X<missing VAR>-ray photoemission spectroscopy (X<missing VAR>PS) measurement revealedthat the Te ions were in the tetravalent state and the manganese ions could beconsidered as in a mixture state of Mnsup(2) and MnSup(3).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 0.1, ',', 4],[118.0, 0.1, ',', 3],[106.0, 240, 'K', 2],[109.0, 255, 'K', 2],[114.0, 0.1, ',', 2],[117.0, 0.15, ',', 2],[155.0, 51, '%', 3],[159.0, 200, 'K', 3],[175.0, 40, 'kOe', 3]

Te
###Structure, electric and magnetic properties of the electron-doped manganese oxide: La{sub(1-x)}Te{sub(x)}MnO{sub(3)}(x=0.1, 0.15)|Guotai Tan,Shouyu Dai,Ping Duan,Huibin Lu,Yueliang Zhou,Zhenghao Chen###
(251762, 251762)
 X<missing VAR>-ray photoemission spectroscopy (X<missing VAR>PS) measurement revealedthat the Te ions were in the tetravalent state and the manganese ions could beconsidered as in a mixture state of Mnsup(2) and MnSup(3).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[177.0, 0.1, ',', 4],[130.0, 0.1, ',', 3],[94.0, 240, 'K', 2],[97.0, 255, 'K', 2],[102.0, 0.1, ',', 2],[105.0, 0.15, ',', 2],[143.0, 51, '%', 3],[147.0, 200, 'K', 3],[163.0, 40, 'kOe', 3]

Mn
###Structure, electric and magnetic properties of the electron-doped manganese oxide: La{sub(1-x)}Te{sub(x)}MnO{sub(3)}(x=0.1, 0.15)|Guotai Tan,Shouyu Dai,Ping Duan,Huibin Lu,Yueliang Zhou,Zhenghao Chen###
(251803, 251803)
 X<missing VAR>-ray photoemission spectroscopy (X<missing VAR>PS) measurement revealedthat the Te ions were in the tetravalent state and the manganese ions could beconsidered as in a mixture state of Mnsup(2) and MnSup(3).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[218.0, 0.1, ',', 4],[171.0, 0.1, ',', 3],[53.0, 240, 'K', 2],[56.0, 255, 'K', 2],[61.0, 0.1, ',', 2],[64.0, 0.15, ',', 2],[102.0, 51, '%', 3],[106.0, 200, 'K', 3],[122.0, 40, 'kOe', 3]

Mn
###Structure, electric and magnetic properties of the electron-doped manganese oxide: La{sub(1-x)}Te{sub(x)}MnO{sub(3)}(x=0.1, 0.15)|Guotai Tan,Shouyu Dai,Ping Duan,Huibin Lu,Yueliang Zhou,Zhenghao Chen###
(251811, 251811)
 X<missing VAR>-ray photoemission spectroscopy (X<missing VAR>PS) measurement revealedthat the Te ions were in the tetravalent state and the manganese ions could beconsidered as in a mixture state of Mnsup(2) and MnSup(3).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[226.0, 0.1, ',', 4],[179.0, 0.1, ',', 3],[45.0, 240, 'K', 2],[48.0, 255, 'K', 2],[53.0, 0.1, ',', 2],[56.0, 0.15, ',', 2],[94.0, 51, '%', 3],[98.0, 200, 'K', 3],[114.0, 40, 'kOe', 3]

(Tc)
###Structure, electric and magnetic properties of the electron-doped manganese oxide: La{sub(1-x)}Te{sub(x)}MnO{sub(3)}(x=0.1, 0.15)|Guotai Tan,Shouyu Dai,Ping Duan,Huibin Lu,Yueliang Zhou,Zhenghao Chen###
(251849, 251851)
 The Curie temperature(Tc) was about 240 K and 255 K for x<missing VAR>0.1, 0.15, respectively.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[264.0, 0.1, ',', 6],[217.0, 0.1, ',', 5],[5.0, 240, 'K', 0],[8.0, 255, 'K', 0],[13.0, 0.1, ',', 0],[16.0, 0.15, ',', 0],[54.0, 51, '%', 1],[58.0, 200, 'K', 1],[74.0, 40, 'kOe', 1]

(H)
###Structure, electric and magnetic properties of the electron-doped manganese oxide: La{sub(1-x)}Te{sub(x)}MnO{sub(3)}(x=0.1, 0.15)|Guotai Tan,Shouyu Dai,Ping Duan,Huibin Lu,Yueliang Zhou,Zhenghao Chen###
(251891, 251893)
 The maximummagnetoresistance ratio MR[r<missing VAR>(0)-r<missing VAR>(H)]/r<missing VAR>(0) was about 51% at 200 K and in theapplied magnetic field of 40 kOe.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[306.0, 0.1, ',', 7],[259.0, 0.1, ',', 6],[35.0, 240, 'K', 1],[32.0, 255, 'K', 1],[27.0, 0.1, ',', 1],[24.0, 0.15, ',', 1],[12.0, 51, '%', 0],[16.0, 200, 'K', 0],[32.0, 40, 'kOe', 0]

LaMnO3
###Griffiths singularities and magnetoresistive manganites|M. B. Salamon,S. H. Chun###
(251974, 251977)
 The large, so-called colossal, magnetoresistivity of doped manganese oxidesbased on LaMnO3 has attracted considerable attention, but only one unusualfeature of the ferromagnetic transition in these compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 360, 'K', 1],[83.0, 218, 'K', 1],[184.0, 100, 'K', 3]

La0.7Sr0.3MnO3
###Griffiths singularities and magnetoresistive manganites|M. B. Salamon,S. H. Chun###
(252080, 252086)
 Single crystals of La0.7Sr0.3MnO3, as is well known, show modestmagnetoresistivity and conventional critical behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 360, 'K', 1],[20.0, 218, 'K', 1],[75.0, 100, 'K', 1]

La0.7Pb0.3
###Griffiths singularities and magnetoresistive manganites|M. B. Salamon,S. H. Chun###
(252114, 252117)
 La0.7Pb0.3MnO3, and to an even greater extent, La0.7Ca0.3MnO3, haveunusual magnetic properties extending more than 100 K above the transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 360, 'K', 2],[54.0, 218, 'K', 2],[44.0, 100, 'K', 0]

MnO3
###Griffiths singularities and magnetoresistive manganites|M. B. Salamon,S. H. Chun###
(252120, 252122)
 La0.7Pb0.3MnO3, and to an even greater extent, La0.7Ca0.3MnO3, haveunusual magnetic properties extending more than 100 K above the transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 360, 'K', 2],[60.0, 218, 'K', 2],[39.0, 100, 'K', 0]

La0.7Ca0.3MnO3
###Griffiths singularities and magnetoresistive manganites|M. B. Salamon,S. H. Chun###
(252138, 252144)
 La0.7Pb0.3MnO3, and to an even greater extent, La0.7Ca0.3MnO3, haveunusual magnetic properties extending more than 100 K above the transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 360, 'K', 2],[78.0, 218, 'K', 2],[17.0, 100, 'K', 0]

CaCu3Mn4O12
###Structural Aspects of Magnetic Coupling in CaCu3Mn4O12 and CaCu3Ti4O12|M. D. Johannes,W. E. Pickett,R. Weht###
(252259, 252265)
Structural Aspects of Magnetic Coupling in CaCu3Mn4O12 and CaCu3Ti4O12.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.05,0,0,0,0,0.2,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[293.0, 5, 'th', 5]

CaCu3Ti4O12
###Structural Aspects of Magnetic Coupling in CaCu3Mn4O12 and CaCu3Ti4O12|M. D. Johannes,W. E. Pickett,R. Weht###
(252269, 252275)
Structural Aspects of Magnetic Coupling in CaCu3Mn4O12 and CaCu3Ti4O12.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.05,0,0.2,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[283.0, 5, 'th', 5]

CaCu3Mn4O12
###Structural Aspects of Magnetic Coupling in CaCu3Mn4O12 and CaCu3Ti4O12|M. D. Johannes,W. E. Pickett,R. Weht###
(252287, 252293)
 Two perovskite-derived materials, CaCu3Mn4O12 and CaCu3Ti4O12, have drawnmuch recent interest due to their magnetoresistive, dielectric, andmagnetoelectronic characteristics.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.05,0,0,0,0,0.2,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[265.0, 5, 'th', 4]

CaCu3Ti4O12
###Structural Aspects of Magnetic Coupling in CaCu3Mn4O12 and CaCu3Ti4O12|M. D. Johannes,W. E. Pickett,R. Weht###
(252297, 252303)
 Two perovskite-derived materials, CaCu3Mn4O12 and CaCu3Ti4O12, have drawnmuch recent interest due to their magnetoresistive, dielectric, andmagnetoelectronic characteristics.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.05,0,0.2,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[255.0, 5, 'th', 4]

CC
###Structural Aspects of Magnetic Coupling in CaCu3Mn4O12 and CaCu3Ti4O12|M. D. Johannes,W. E. Pickett,R. Weht###
(252386, 252387)
 Our results predict CCM<missing VAR>O to have a spin-asymmetric energy gap,which leads to distinct temperature- and magnetic field-dependent changes inproperties, and helps to account for its observed negative magnetoresistivity.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[171.0, 5, 'th', 2]

O
###Structural Aspects of Magnetic Coupling in CaCu3Mn4O12 and CaCu3Ti4O12|M. D. Johannes,W. E. Pickett,R. Weht###
(252389, 252389)
 Our results predict CCM<missing VAR>O to have a spin-asymmetric energy gap,which leads to distinct temperature- and magnetic field-dependent changes inproperties, and helps to account for its observed negative magnetoresistivity.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 5, 'th', 2]

CC
###Structural Aspects of Magnetic Coupling in CaCu3Mn4O12 and CaCu3Ti4O12|M. D. Johannes,W. E. Pickett,R. Weht###
(252460, 252461)
We have studied CCT<missing VAR>O primarily to gain insight into the exchange coupling inboth these compounds, where the conventional superexchange coupling vanishes bysymmetry for both nearest and next nearest Cu-Cu neighbors, a consequence ofthe structure.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 5, 'th', 1]

O
###Structural Aspects of Magnetic Coupling in CaCu3Mn4O12 and CaCu3Ti4O12|M. D. Johannes,W. E. Pickett,R. Weht###
(252463, 252463)
We have studied CCT<missing VAR>O primarily to gain insight into the exchange coupling inboth these compounds, where the conventional superexchange coupling vanishes bysymmetry for both nearest and next nearest Cu-Cu neighbors, a consequence ofthe structure.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 5, 'th', 1]

Cu
###Structural Aspects of Magnetic Coupling in CaCu3Mn4O12 and CaCu3Ti4O12|M. D. Johannes,W. E. Pickett,R. Weht###
(252520, 252520)
We have studied CCT<missing VAR>O primarily to gain insight into the exchange coupling inboth these compounds, where the conventional superexchange coupling vanishes bysymmetry for both nearest and next nearest Cu-Cu neighbors, a consequence ofthe structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 5, 'th', 1]

Cu
###Structural Aspects of Magnetic Coupling in CaCu3Mn4O12 and CaCu3Ti4O12|M. D. Johannes,W. E. Pickett,R. Weht###
(252522, 252522)
We have studied CCT<missing VAR>O primarily to gain insight into the exchange coupling inboth these compounds, where the conventional superexchange coupling vanishes bysymmetry for both nearest and next nearest Cu-Cu neighbors, a consequence ofthe structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 5, 'th', 1]

In
###Structural Aspects of Magnetic Coupling in CaCu3Mn4O12 and CaCu3Ti4O12|M. D. Johannes,W. E. Pickett,R. Weht###
(252539, 252539)
 In CCT<missing VAR>O, it is necessary to go to 5th Cu-Cu neighbors to obtaina (superexchange) coupling that can provide the coupling necessary to givethree dimensional order.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 5, 'th', 0]

CC
###Structural Aspects of Magnetic Coupling in CaCu3Mn4O12 and CaCu3Ti4O12|M. D. Johannes,W. E. Pickett,R. Weht###
(252541, 252542)
 In CCT<missing VAR>O, it is necessary to go to 5th Cu-Cu neighbors to obtaina (superexchange) coupling that can provide the coupling necessary to givethree dimensional order.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 5, 'th', 0]

O
###Structural Aspects of Magnetic Coupling in CaCu3Mn4O12 and CaCu3Ti4O12|M. D. Johannes,W. E. Pickett,R. Weht###
(252544, 252544)
 In CCT<missing VAR>O, it is necessary to go to 5th Cu-Cu neighbors to obtaina (superexchange) coupling that can provide the coupling necessary to givethree dimensional order.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 5, 'th', 0]

Cu
###Structural Aspects of Magnetic Coupling in CaCu3Mn4O12 and CaCu3Ti4O12|M. D. Johannes,W. E. Pickett,R. Weht###
(252560, 252560)
 In CCT<missing VAR>O, it is necessary to go to 5th Cu-Cu neighbors to obtaina (superexchange) coupling that can provide the coupling necessary to givethree dimensional order.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 5, 'th', 0]

Cu
###Structural Aspects of Magnetic Coupling in CaCu3Mn4O12 and CaCu3Ti4O12|M. D. Johannes,W. E. Pickett,R. Weht###
(252562, 252562)
 In CCT<missing VAR>O, it is necessary to go to 5th Cu-Cu neighbors to obtaina (superexchange) coupling that can provide the coupling necessary to givethree dimensional order.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 5, 'th', 0]

Lu5Ir4Si10
###Magnetic field and pressure effects on charge density wave, superconducting, and magnetic states in Lu$_5$Ir$_4$Si$_{10}$ and Er$_5$Ir$_4$Si$_{10}$|M. H. Jung,H. C. Kim,F. Galli,J. A. Mydosh###
(252673, 252678)
Magnetic field and pressure effects on charge density wave, superconducting, and magnetic states in Lu5Ir4Si10 and Er5Ir4Si10.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5263157894736842,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2631578947368421,0,0,0,0,0,0.21052631578947367,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Er5Ir4Si10
###Magnetic field and pressure effects on charge density wave, superconducting, and magnetic states in Lu$_5$Ir$_4$Si$_{10}$ and Er$_5$Ir$_4$Si$_{10}$|M. H. Jung,H. C. Kim,F. Galli,J. A. Mydosh###
(252682, 252687)
Magnetic field and pressure effects on charge density wave, superconducting, and magnetic states in Lu5Ir4Si10 and Er5Ir4Si10.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5263157894736842,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2631578947368421,0,0,0,0,0,0,0,0,0.21052631578947367,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Magnetic field and pressure effects on charge density wave, superconducting, and magnetic states in Lu$_5$Ir$_4$Si$_{10}$ and Er$_5$Ir$_4$Si$_{10}$|M. H. Jung,H. C. Kim,F. Galli,J. A. Mydosh###
(252705, 252705)
 We have studied the charge-density-wave (CD<missing VAR>W) state for the superconductingLu5Ir4Si10 and the antiferromagnetic Er5Ir4Si10 asvariables of temperature, magnetic field, and hydrostatic pressure.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Magnetic field and pressure effects on charge density wave, superconducting, and magnetic states in Lu$_5$Ir$_4$Si$_{10}$ and Er$_5$Ir$_4$Si$_{10}$|M. H. Jung,H. C. Kim,F. Galli,J. A. Mydosh###
(252707, 252707)
 We have studied the charge-density-wave (CD<missing VAR>W) state for the superconductingLu5Ir4Si10 and the antiferromagnetic Er5Ir4Si10 asvariables of temperature, magnetic field, and hydrostatic pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Lu5Ir4Si10
###Magnetic field and pressure effects on charge density wave, superconducting, and magnetic states in Lu$_5$Ir$_4$Si$_{10}$ and Er$_5$Ir$_4$Si$_{10}$|M. H. Jung,H. C. Kim,F. Galli,J. A. Mydosh###
(252719, 252724)
 We have studied the charge-density-wave (CD<missing VAR>W) state for the superconductingLu5Ir4Si10 and the antiferromagnetic Er5Ir4Si10 asvariables of temperature, magnetic field, and hydrostatic pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5263157894736842,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2631578947368421,0,0,0,0,0,0.21052631578947367,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Er5Ir4Si10
###Magnetic field and pressure effects on charge density wave, superconducting, and magnetic states in Lu$_5$Ir$_4$Si$_{10}$ and Er$_5$Ir$_4$Si$_{10}$|M. H. Jung,H. C. Kim,F. Galli,J. A. Mydosh###
(252732, 252737)
 We have studied the charge-density-wave (CD<missing VAR>W) state for the superconductingLu5Ir4Si10 and the antiferromagnetic Er5Ir4Si10 asvariables of temperature, magnetic field, and hydrostatic pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5263157894736842,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2631578947368421,0,0,0,0,0,0,0,0,0.21052631578947367,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Lu5Ir4Si10
###Magnetic field and pressure effects on charge density wave, superconducting, and magnetic states in Lu$_5$Ir$_4$Si$_{10}$ and Er$_5$Ir$_4$Si$_{10}$|M. H. Jung,H. C. Kim,F. Galli,J. A. Mydosh###
(252764, 252769)
 ForLu5Ir4Si10, the application of pressure strongly suppresses the CD<missing VAR>Wphase but weakly enhances the superconducting phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5263157894736842,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2631578947368421,0,0,0,0,0,0.21052631578947367,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Magnetic field and pressure effects on charge density wave, superconducting, and magnetic states in Lu$_5$Ir$_4$Si$_{10}$ and Er$_5$Ir$_4$Si$_{10}$|M. H. Jung,H. C. Kim,F. Galli,J. A. Mydosh###
(252786, 252786)
 ForLu5Ir4Si10, the application of pressure strongly suppresses the CD<missing VAR>Wphase but weakly enhances the superconducting phase.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Magnetic field and pressure effects on charge density wave, superconducting, and magnetic states in Lu$_5$Ir$_4$Si$_{10}$ and Er$_5$Ir$_4$Si$_{10}$|M. H. Jung,H. C. Kim,F. Galli,J. A. Mydosh###
(252788, 252788)
 ForLu5Ir4Si10, the application of pressure strongly suppresses the CD<missing VAR>Wphase but weakly enhances the superconducting phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Er5Ir4Si10
###Magnetic field and pressure effects on charge density wave, superconducting, and magnetic states in Lu$_5$Ir$_4$Si$_{10}$ and Er$_5$Ir$_4$Si$_{10}$|M. H. Jung,H. C. Kim,F. Galli,J. A. Mydosh###
(252808, 252813)
 For Er5Ir4Si10,the incommensurate CD<missing VAR>W state is pressure independent and the commensurate CD<missing VAR>Wstate strongly depends on the pressure, whereas the antiferromagnetic orderingis slightly depressed by applying pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5263157894736842,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2631578947368421,0,0,0,0,0,0,0,0,0.21052631578947367,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Magnetic field and pressure effects on charge density wave, superconducting, and magnetic states in Lu$_5$Ir$_4$Si$_{10}$ and Er$_5$Ir$_4$Si$_{10}$|M. H. Jung,H. C. Kim,F. Galli,J. A. Mydosh###
(252821, 252821)
 For Er5Ir4Si10,the incommensurate CD<missing VAR>W state is pressure independent and the commensurate CD<missing VAR>Wstate strongly depends on the pressure, whereas the antiferromagnetic orderingis slightly depressed by applying pressure.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Magnetic field and pressure effects on charge density wave, superconducting, and magnetic states in Lu$_5$Ir$_4$Si$_{10}$ and Er$_5$Ir$_4$Si$_{10}$|M. H. Jung,H. C. Kim,F. Galli,J. A. Mydosh###
(252823, 252823)
 For Er5Ir4Si10,the incommensurate CD<missing VAR>W state is pressure independent and the commensurate CD<missing VAR>Wstate strongly depends on the pressure, whereas the antiferromagnetic orderingis slightly depressed by applying pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Magnetic field and pressure effects on charge density wave, superconducting, and magnetic states in Lu$_5$Ir$_4$Si$_{10}$ and Er$_5$Ir$_4$Si$_{10}$|M. H. Jung,H. C. Kim,F. Galli,J. A. Mydosh###
(252839, 252839)
 For Er5Ir4Si10,the incommensurate CD<missing VAR>W state is pressure independent and the commensurate CD<missing VAR>Wstate strongly depends on the pressure, whereas the antiferromagnetic orderingis slightly depressed by applying pressure.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Magnetic field and pressure effects on charge density wave, superconducting, and magnetic states in Lu$_5$Ir$_4$Si$_{10}$ and Er$_5$Ir$_4$Si$_{10}$|M. H. Jung,H. C. Kim,F. Galli,J. A. Mydosh###
(252841, 252841)
 For Er5Ir4Si10,the incommensurate CD<missing VAR>W state is pressure independent and the commensurate CD<missing VAR>Wstate strongly depends on the pressure, whereas the antiferromagnetic orderingis slightly depressed by applying pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magnetic field and pressure effects on charge density wave, superconducting, and magnetic states in Lu$_5$Ir$_4$Si$_{10}$ and Er$_5$Ir$_4$Si$_{10}$|M. H. Jung,H. C. Kim,F. Galli,J. A. Mydosh###
(252879, 252879)
 In addition, Er5Ir4Si10shows negative magnetoresistance at low temperatures, compared with thepositive magnetoresistance of Lu5Ir4Si10.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Er5Ir4Si10
###Magnetic field and pressure effects on charge density wave, superconducting, and magnetic states in Lu$_5$Ir$_4$Si$_{10}$ and Er$_5$Ir$_4$Si$_{10}$|M. H. Jung,H. C. Kim,F. Galli,J. A. Mydosh###
(252884, 252889)
 In addition, Er5Ir4Si10shows negative magnetoresistance at low temperatures, compared with thepositive magnetoresistance of Lu5Ir4Si10.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5263157894736842,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2631578947368421,0,0,0,0,0,0,0,0,0.21052631578947367,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Lu5Ir4Si10
###Magnetic field and pressure effects on charge density wave, superconducting, and magnetic states in Lu$_5$Ir$_4$Si$_{10}$ and Er$_5$Ir$_4$Si$_{10}$|M. H. Jung,H. C. Kim,F. Galli,J. A. Mydosh###
(252918, 252923)
 In addition, Er5Ir4Si10shows negative magnetoresistance at low temperatures, compared with thepositive magnetoresistance of Lu5Ir4Si10.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5263157894736842,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2631578947368421,0,0,0,0,0,0.21052631578947367,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ca3Ru2O7
###Quantum Oscillations, Colossal Magnetoresistance and Magnetoelastic Interaction in Bilayered Ca3Ru2O7|G. Cao,L. Balicas,Y. Xin,J. E. Crow,C. S. Nelson###
(252953, 252958)
Quantum Oscillations, Colossal Magnetoresistance and Magnetoelastic Interaction in Bilayered Ca3Ru2O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 0.1, 'eV', 2],[219.0, 20, 'mK', 3]

Ca3Ru2O7
###Quantum Oscillations, Colossal Magnetoresistance and Magnetoelastic Interaction in Bilayered Ca3Ru2O7|G. Cao,L. Balicas,Y. Xin,J. E. Crow,C. S. Nelson###
(252979, 252984)
 We report magnetic and inter-plane transport properties of Ca3Ru2O7 at highmagnetic fields and low temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 0.1, 'eV', 1],[193.0, 20, 'mK', 2]

Ca3Ru2O7
###Quantum Oscillations, Colossal Magnetoresistance and Magnetoelastic Interaction in Bilayered Ca3Ru2O7|G. Cao,L. Balicas,Y. Xin,J. E. Crow,C. S. Nelson###
(253002, 253007)
 Ca3Ru2O7 with a bilayered orthorhombicstructure is a Mott-like system with a narrow charge gap of 0.1eV.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 0.1, 'eV', 0],[170.0, 20, 'mK', 1]

I
###Quantum Oscillations, Colossal Magnetoresistance and Magnetoelastic Interaction in Bilayered Ca3Ru2O7|G. Cao,L. Balicas,Y. Xin,J. E. Crow,C. S. Nelson###
(253113, 253113)
 Of a host ofunusual physical phenomena revealed in this study, a few are particularlyintriguing (1) a collapse of the c<missing VAR>-axis lattice parameter at a metal-nonmetaltransition, TMI (48 K), and a rapid increase of TMI with low uniaxial pressureapplied along the c<missing VAR>-axis; (2) quantum oscillations in the gapped, nonmetallicstate for 20 mK<T<missing VAR><6.5 K; (3) tunneling colossal magnetoresistance, which yieldsa precipitate drop in resistivity by as much as three orders of magnitude; (4)different in-plane anisotropies of the colossal magnetoresistance andmagnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 0.1, 'eV', 1],[64.0, 20, 'mK', 0]

K
###Quantum Oscillations, Colossal Magnetoresistance and Magnetoelastic Interaction in Bilayered Ca3Ru2O7|G. Cao,L. Balicas,Y. Xin,J. E. Crow,C. S. Nelson###
(253118, 253118)
 Of a host ofunusual physical phenomena revealed in this study, a few are particularlyintriguing (1) a collapse of the c<missing VAR>-axis lattice parameter at a metal-nonmetaltransition, TMI (48 K), and a rapid increase of TMI with low uniaxial pressureapplied along the c<missing VAR>-axis; (2) quantum oscillations in the gapped, nonmetallicstate for 20 mK<T<missing VAR><6.5 K; (3) tunneling colossal magnetoresistance, which yieldsa precipitate drop in resistivity by as much as three orders of magnitude; (4)different in-plane anisotropies of the colossal magnetoresistance andmagnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 0.1, 'eV', 1],[59.0, 20, 'mK', 0]

I
###Quantum Oscillations, Colossal Magnetoresistance and Magnetoelastic Interaction in Bilayered Ca3Ru2O7|G. Cao,L. Balicas,Y. Xin,J. E. Crow,C. S. Nelson###
(253134, 253134)
 Of a host ofunusual physical phenomena revealed in this study, a few are particularlyintriguing (1) a collapse of the c<missing VAR>-axis lattice parameter at a metal-nonmetaltransition, TMI (48 K), and a rapid increase of TMI with low uniaxial pressureapplied along the c<missing VAR>-axis; (2) quantum oscillations in the gapped, nonmetallicstate for 20 mK<T<missing VAR><6.5 K; (3) tunneling colossal magnetoresistance, which yieldsa precipitate drop in resistivity by as much as three orders of magnitude; (4)different in-plane anisotropies of the colossal magnetoresistance andmagnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 0.1, 'eV', 1],[43.0, 20, 'mK', 0]

K
###Quantum Oscillations, Colossal Magnetoresistance and Magnetoelastic Interaction in Bilayered Ca3Ru2O7|G. Cao,L. Balicas,Y. Xin,J. E. Crow,C. S. Nelson###
(253183, 253183)
 Of a host ofunusual physical phenomena revealed in this study, a few are particularlyintriguing (1) a collapse of the c<missing VAR>-axis lattice parameter at a metal-nonmetaltransition, TMI (48 K), and a rapid increase of TMI with low uniaxial pressureapplied along the c<missing VAR>-axis; (2) quantum oscillations in the gapped, nonmetallicstate for 20 mK<T<missing VAR><6.5 K; (3) tunneling colossal magnetoresistance, which yieldsa precipitate drop in resistivity by as much as three orders of magnitude; (4)different in-plane anisotropies of the colossal magnetoresistance andmagnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 0.1, 'eV', 1],[6.0, 20, 'mK', 0]

In
###Room temperature domain wall pinning in bent ferromagnetic nanowires|D. M. Silevitch,M. Tanase,C. L. Chien,D. H. Reich###
(253482, 253482)
 In addition, a comparison of the magnetoresistance of the nanowirewith and without a domain wall shows a shift in the resistance correlated withthe presence of a wall.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Measuring Magnetostriction with an Atomic Force Microscope: Application to Wires in Ballistic Magnetoresistance|A. C. Papageorgopoulos,H. Wang,C. Guerrero,N. Garcia###
(254073, 254073)
 In this study we present a new method of measuring magnetostriction with anatomic force microscope adapted for the application magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, -8, ',', 2]

Ni
###Measuring Magnetostriction with an Atomic Force Microscope: Application to Wires in Ballistic Magnetoresistance|A. C. Papageorgopoulos,H. Wang,C. Guerrero,N. Garcia###
(254227, 254227)
 We have, furthermore, used this technique to observemagnetically induced strains as small as 510-8, and have measured Ni,permalloy and commercial Cu wires and films, as well as pure Cu and Pt wires,where results are in agreement with other methods of measurement.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, -8, ',', 0]

Cu
###Measuring Magnetostriction with an Atomic Force Microscope: Application to Wires in Ballistic Magnetoresistance|A. C. Papageorgopoulos,H. Wang,C. Guerrero,N. Garcia###
(254237, 254237)
 We have, furthermore, used this technique to observemagnetically induced strains as small as 510-8, and have measured Ni,permalloy and commercial Cu wires and films, as well as pure Cu and Pt wires,where results are in agreement with other methods of measurement.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, -8, ',', 0]

Cu
###Measuring Magnetostriction with an Atomic Force Microscope: Application to Wires in Ballistic Magnetoresistance|A. C. Papageorgopoulos,H. Wang,C. Guerrero,N. Garcia###
(254254, 254254)
 We have, furthermore, used this technique to observemagnetically induced strains as small as 510-8, and have measured Ni,permalloy and commercial Cu wires and films, as well as pure Cu and Pt wires,where results are in agreement with other methods of measurement.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, -8, ',', 0]

Pt
###Measuring Magnetostriction with an Atomic Force Microscope: Application to Wires in Ballistic Magnetoresistance|A. C. Papageorgopoulos,H. Wang,C. Guerrero,N. Garcia###
(254258, 254258)
 We have, furthermore, used this technique to observemagnetically induced strains as small as 510-8, and have measured Ni,permalloy and commercial Cu wires and films, as well as pure Cu and Pt wires,where results are in agreement with other methods of measurement.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, -8, ',', 0]

Cu(NCS)2
###Angle Dependent Magnetoresistance of the Layered Organic Superconductor κ-(ET)2Cu(NCS)2: Simulation and Experiment|P. A. Goddard,S. J. Blundell,J. Singleton,R. D. McDonald,A. Ardavan,A. Narduzzo,J. A. Schlueter,A. M. Kini,T. Sasaki###
(254386, 254392)
Angle Dependent Magnetoresistance of the Layered Organic Superconductor -(ET)2Cu(NCS)2 Simulation and Experiment.
Featurization terminated normally.
0,0,0,0,0,0.2857142857142857,0.2857142857142857,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu(NCS)2
###Angle Dependent Magnetoresistance of the Layered Organic Superconductor κ-(ET)2Cu(NCS)2: Simulation and Experiment|P. A. Goddard,S. J. Blundell,J. Singleton,R. D. McDonald,A. Ardavan,A. Narduzzo,J. A. Schlueter,A. M. Kini,T. Sasaki###
(254450, 254456)
 The angle-dependences of the magnetoresistance of two different isotopicsubstitutions (deuterated and undeuterated) of the layered organicsuperconductor kappa-(ET)2Cu(NCS)2 are presented.
Featurization terminated normally.
0,0,0,0,0,0.2857142857142857,0.2857142857142857,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Angle Dependent Magnetoresistance of the Layered Organic Superconductor κ-(ET)2Cu(NCS)2: Simulation and Experiment|P. A. Goddard,S. J. Blundell,J. Singleton,R. D. McDonald,A. Ardavan,A. Narduzzo,J. A. Schlueter,A. M. Kini,T. Sasaki###
(254478, 254478)
 The angle dependentmagnetoresistance oscillations (AMRO) arising from the quasi-one-dimensional(Q1D) and quasi-two-dimensional (Q2D) Fermi surfaces in this material are oftenconfused.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Angle Dependent Magnetoresistance of the Layered Organic Superconductor κ-(ET)2Cu(NCS)2: Simulation and Experiment|P. A. Goddard,S. J. Blundell,J. Singleton,R. D. McDonald,A. Ardavan,A. Narduzzo,J. A. Schlueter,A. M. Kini,T. Sasaki###
(254556, 254556)
 By using the Boltzman transport equation extensive simulations of theAMRO are made that reveal the subtle differences between the different speciesof oscillation.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

No
###Angle Dependent Magnetoresistance of the Layered Organic Superconductor κ-(ET)2Cu(NCS)2: Simulation and Experiment|P. A. Goddard,S. J. Blundell,J. Singleton,R. D. McDonald,A. Ardavan,A. Narduzzo,J. A. Schlueter,A. M. Kini,T. Sasaki###
(254586, 254586)
 No significant differences are observed in the electronicparameters derived from quantum oscillations and AMRO for the two isotopicsubstitutions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0
Abstract does not contain any numbers.

O
###Angle Dependent Magnetoresistance of the Layered Organic Superconductor κ-(ET)2Cu(NCS)2: Simulation and Experiment|P. A. Goddard,S. J. Blundell,J. Singleton,R. D. McDonald,A. Ardavan,A. Narduzzo,J. A. Schlueter,A. M. Kini,T. Sasaki###
(254618, 254618)
 No significant differences are observed in the electronicparameters derived from quantum oscillations and AMRO for the two isotopicsubstitutions.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Ferromagnetic tunneling junctions at low voltages: elastic versus inelastic scattering at $T=0 K$|C. A. Dartora,G. G. Cabrera###
(255112, 255112)
Ferromagnetic tunneling junctions at low voltages elastic versus inelastic scattering at T<missing VAR>0 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Ferromagnetic tunneling junctions at low voltages: elastic versus inelastic scattering at $T=0 K$|C. A. Dartora,G. G. Cabrera###
(255115, 255115)
 In this paper we analyze different contributions to the magnetoresistance ofmagnetic tunneling junctions at low voltages.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###An Origin of CMR: Competing Phases and Disorder-Induced Insulator-to-Metal Transition in Manganites|Yukitoshi Motome,Nobuo Furukawa,Naoto Nagaosa###
(255771, 255771)
An Origin of CMR Competing Phases and Disorder-Induced Insulator-to-Metal Transition in Manganites.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###An Origin of CMR: Competing Phases and Disorder-Induced Insulator-to-Metal Transition in Manganites|Yukitoshi Motome,Nobuo Furukawa,Naoto Nagaosa###
(255906, 255906)
 As a result, thereappears a nontrivial phenomenon of the disorder-induced insulator-to-metaltransition in the multicritical regime.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ba0.5MnO3
###Colossal magnetoresistance without phase separation: Disorder-induced spin glass state and nanometer scale orbital-charge correlation in half doped manganites|R. Mathieu,D. Akahoshi,A. Asamitsu,Y. Tomioka,Y. Tokura###
(256171, 256175)
 The magnetic and electrical properties of high quality single crystals ofA-site disordered (solid solution) Ln0.5Ba0.5MnO3 areinvestigated near the phase boundary between the spin glass insulator andcolossal-magnetoresistive ferromagnetic metal, locating near Ln  Sm.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sm
###Colossal magnetoresistance without phase separation: Disorder-induced spin glass state and nanometer scale orbital-charge correlation in half doped manganites|R. Mathieu,D. Akahoshi,A. Asamitsu,Y. Tomioka,Y. Tokura###
(256219, 256219)
 The magnetic and electrical properties of high quality single crystals ofA-site disordered (solid solution) Ln0.5Ba0.5MnO3 areinvestigated near the phase boundary between the spin glass insulator andcolossal-magnetoresistive ferromagnetic metal, locating near Ln  Sm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Eu0.5Ba0.5MnO3
###Colossal magnetoresistance without phase separation: Disorder-induced spin glass state and nanometer scale orbital-charge correlation in half doped manganites|R. Mathieu,D. Akahoshi,A. Asamitsu,Y. Tomioka,Y. Tokura###
(256252, 256258)
 Thetemperature dependence of the ac-susceptibility and the x<missing VAR>-ray diffusescattering of Eu0.5Ba0.5MnO3 are analyzed in detail.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ba0.5MnO3
###Colossal magnetoresistance without phase separation: Disorder-induced spin glass state and nanometer scale orbital-charge correlation in half doped manganites|R. Mathieu,D. Akahoshi,A. Asamitsu,Y. Tomioka,Y. Tokura###
(256288, 256292)
 Theuniformity of the random potential perturbation in Ln0.5Ba0.5MnO3crystals with small bandwidth yields, rather than the phase separation, anhomogeneous short ranged charge/orbital order which gives rise to anearly-atomic spin glass state.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Colossal magnetoresistance without phase separation: Disorder-induced spin glass state and nanometer scale orbital-charge correlation in half doped manganites|R. Mathieu,D. Akahoshi,A. Asamitsu,Y. Tomioka,Y. Tokura###
(256364, 256364)
 Remarkably, this microscopically disorderedCE<missing VAR>-glass state alone is able to bring forth the colossal magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.9Te0.1MnO3
###The effect of grain size on electrical transport and magnetic properties of La0.9Te0.1MnO3|J. Yang,B. C. Zhao,R. L. Zhang,Y. Q. Ma,Z. G. Sheng,W. H. Song,Y. P. Sun###
(256422, 256428)
The effect of grain size on electrical transport and magnetic properties of La0.9Te0.1MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.02,0,0,0,0,0.18,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.9Te0.1MnO3
###The effect of grain size on electrical transport and magnetic properties of La0.9Te0.1MnO3|J. Yang,B. C. Zhao,R. L. Zhang,Y. Q. Ma,Z. G. Sheng,W. H. Song,Y. P. Sun###
(256463, 256469)
 The effect of grain size on structural, magnetic and transport properties inelectron-doped manganites La0.9Te0.1MnO3 has been investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.02,0,0,0,0,0.18,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###The effect of grain size on electrical transport and magnetic properties of La0.9Te0.1MnO3|J. Yang,B. C. Zhao,R. L. Zhang,Y. Q. Ma,Z. G. Sheng,W. H. Song,Y. P. Sun###
(256515, 256515)
 Itshows that the Mn-O-Mn bond angle decreases and the Mn-O bond length increaseswith the increase of grain size.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###The effect of grain size on electrical transport and magnetic properties of La0.9Te0.1MnO3|J. Yang,B. C. Zhao,R. L. Zhang,Y. Q. Ma,Z. G. Sheng,W. H. Song,Y. P. Sun###
(256517, 256517)
 Itshows that the Mn-O-Mn bond angle decreases and the Mn-O bond length increaseswith the increase of grain size.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###The effect of grain size on electrical transport and magnetic properties of La0.9Te0.1MnO3|J. Yang,B. C. Zhao,R. L. Zhang,Y. Q. Ma,Z. G. Sheng,W. H. Song,Y. P. Sun###
(256519, 256519)
 Itshows that the Mn-O-Mn bond angle decreases and the Mn-O bond length increaseswith the increase of grain size.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###The effect of grain size on electrical transport and magnetic properties of La0.9Te0.1MnO3|J. Yang,B. C. Zhao,R. L. Zhang,Y. Q. Ma,Z. G. Sheng,W. H. Song,Y. P. Sun###
(256531, 256531)
 Itshows that the Mn-O-Mn bond angle decreases and the Mn-O bond length increaseswith the increase of grain size.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###The effect of grain size on electrical transport and magnetic properties of La0.9Te0.1MnO3|J. Yang,B. C. Zhao,R. L. Zhang,Y. Q. Ma,Z. G. Sheng,W. H. Song,Y. P. Sun###
(256533, 256533)
 Itshows that the Mn-O-Mn bond angle decreases and the Mn-O bond length increaseswith the increase of grain size.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###The effect of grain size on electrical transport and magnetic properties of La0.9Te0.1MnO3|J. Yang,B. C. Zhao,R. L. Zhang,Y. Q. Ma,Z. G. Sheng,W. H. Song,Y. P. Sun###
(256565, 256565)
 All samples undergo paramagnetic(PM)-ferromagnetic (FM) phase transition and an interesting phenomenon thatboth magnetization and the Curie temperature decrease with increasing grainsize is observed, which is suggested to mainly originate from the increase ofthe Mn-O bond length .
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###The effect of grain size on electrical transport and magnetic properties of La0.9Te0.1MnO3|J. Yang,B. C. Zhao,R. L. Zhang,Y. Q. Ma,Z. G. Sheng,W. H. Song,Y. P. Sun###
(256572, 256572)
 All samples undergo paramagnetic(PM)-ferromagnetic (FM) phase transition and an interesting phenomenon thatboth magnetization and the Curie temperature decrease with increasing grainsize is observed, which is suggested to mainly originate from the increase ofthe Mn-O bond length .
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###The effect of grain size on electrical transport and magnetic properties of La0.9Te0.1MnO3|J. Yang,B. C. Zhao,R. L. Zhang,Y. Q. Ma,Z. G. Sheng,W. H. Song,Y. P. Sun###
(256642, 256642)
 All samples undergo paramagnetic(PM)-ferromagnetic (FM) phase transition and an interesting phenomenon thatboth magnetization and the Curie temperature decrease with increasing grainsize is observed, which is suggested to mainly originate from the increase ofthe Mn-O bond length .
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###The effect of grain size on electrical transport and magnetic properties of La0.9Te0.1MnO3|J. Yang,B. C. Zhao,R. L. Zhang,Y. Q. Ma,Z. G. Sheng,W. H. Song,Y. P. Sun###
(256644, 256644)
 All samples undergo paramagnetic(PM)-ferromagnetic (FM) phase transition and an interesting phenomenon thatboth magnetization and the Curie temperature decrease with increasing grainsize is observed, which is suggested to mainly originate from the increase ofthe Mn-O bond length .
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###The effect of grain size on electrical transport and magnetic properties of La0.9Te0.1MnO3|J. Yang,B. C. Zhao,R. L. Zhang,Y. Q. Ma,Z. G. Sheng,W. H. Song,Y. P. Sun###
(256726, 256726)
 The results indicate that both the intrinsiccolossal magnetoresistance (CMR) and the extrinsic the extrinsic interfacialmagnetoresistance (IMR) can be effectively tuned in La0.9Te0.1MnO3 by changinggrain size.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###The effect of grain size on electrical transport and magnetic properties of La0.9Te0.1MnO3|J. Yang,B. C. Zhao,R. L. Zhang,Y. Q. Ma,Z. G. Sheng,W. H. Song,Y. P. Sun###
(256747, 256747)
 The results indicate that both the intrinsiccolossal magnetoresistance (CMR) and the extrinsic the extrinsic interfacialmagnetoresistance (IMR) can be effectively tuned in La0.9Te0.1MnO3 by changinggrain size.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.9Te0.1MnO3
###The effect of grain size on electrical transport and magnetic properties of La0.9Te0.1MnO3|J. Yang,B. C. Zhao,R. L. Zhang,Y. Q. Ma,Z. G. Sheng,W. H. Song,Y. P. Sun###
(256762, 256768)
 The results indicate that both the intrinsiccolossal magnetoresistance (CMR) and the extrinsic the extrinsic interfacialmagnetoresistance (IMR) can be effectively tuned in La0.9Te0.1MnO3 by changinggrain size.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.02,0,0,0,0,0.18,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###In-plane magnetodrag in dilute bilayer two-dimensional systems: a Fermi liquid theory|S. Das Sarma,E. H. Hwang###
(256788, 256788)
In-plane magnetodrag in dilute bilayer two-dimensional systems a Fermi liquid theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 2, 'D', 1]

In
###In-plane magnetodrag in dilute bilayer two-dimensional systems: a Fermi liquid theory|S. Das Sarma,E. H. Hwang###
(256927, 256927)
 In qualitative agreement withexperiment we find relatively similar behavior in our calculated magnetodragand magnetoresistance arising from the physical effects of screening beingsimilarly modified (suppressed) by carrier spin polarization (at low field)and the conductivity effective mass being similarly modified (enhanced) bystrong magneto-orbital correction (at high fields) in both cases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 2, 'D', 1]

Pr0.85Ca0.15MnO3
###Magnetotransport properties of ferromagnetic Pr0.85Ca0.15MnO3/ferroelectric Ba0.6Sr0.4TiO3 superlattice films|P. Murugavel,P. Padhan,W. Prellier###
(257122, 257128)
Magnetotransport properties of ferromagnetic Pr0.85Ca0.15MnO3/ferroelectric Ba0.6Sr0.4TiO3 superlattice films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.03,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16999999999999998,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 9, 'unit', 3],[213.0, 100, 'K', 4]

Ba0.6Sr0.4TiO3
###Magnetotransport properties of ferromagnetic Pr0.85Ca0.15MnO3/ferroelectric Ba0.6Sr0.4TiO3 superlattice films|P. Murugavel,P. Padhan,W. Prellier###
(257132, 257138)
Magnetotransport properties of ferromagnetic Pr0.85Ca0.15MnO3/ferroelectric Ba0.6Sr0.4TiO3 superlattice films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.12,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 9, 'unit', 3],[203.0, 100, 'K', 4]

Pr0.85Ca0.15MnO3
###Magnetotransport properties of ferromagnetic Pr0.85Ca0.15MnO3/ferroelectric Ba0.6Sr0.4TiO3 superlattice films|P. Murugavel,P. Padhan,W. Prellier###
(257155, 257161)
 Artificial superlattices designed with ferromagnetic Pr0.85Ca0.15MnO3insulating layer and ferroelectric Ba0.6Sr0.4TiO3 layer were grown on (100)SrTiO3 substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.03,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16999999999999998,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 9, 'unit', 2],[180.0, 100, 'K', 3]

Ba0.6Sr0.4TiO3
###Magnetotransport properties of ferromagnetic Pr0.85Ca0.15MnO3/ferroelectric Ba0.6Sr0.4TiO3 superlattice films|P. Murugavel,P. Padhan,W. Prellier###
(257172, 257178)
 Artificial superlattices designed with ferromagnetic Pr0.85Ca0.15MnO3insulating layer and ferroelectric Ba0.6Sr0.4TiO3 layer were grown on (100)SrTiO3 substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.12,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 9, 'unit', 2],[163.0, 100, 'K', 3]

SrTiO3
###Magnetotransport properties of ferromagnetic Pr0.85Ca0.15MnO3/ferroelectric Ba0.6Sr0.4TiO3 superlattice films|P. Murugavel,P. Padhan,W. Prellier###
(257193, 257196)
 Artificial superlattices designed with ferromagnetic Pr0.85Ca0.15MnO3insulating layer and ferroelectric Ba0.6Sr0.4TiO3 layer were grown on (100)SrTiO3 substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 9, 'unit', 2],[145.0, 100, 'K', 3]

Ba0.6Sr0.4TiO3
###Magnetotransport properties of ferromagnetic Pr0.85Ca0.15MnO3/ferroelectric Ba0.6Sr0.4TiO3 superlattice films|P. Murugavel,P. Padhan,W. Prellier###
(257272, 257278)
 An increase in magnetoresistance(MR), with no significant low field effect, was observed as the number offerroelectric Ba0.6Sr0.4TiO3 layer thickness increases even up to 9 unit cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.12,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 9, 'unit', 0],[63.0, 100, 'K', 1]

La0.75(Ca0.45Sr0.55)0.25MnO3
###Uncorrelated and correlated nanoscale lattice distortions in the paramagnetic phase of magnetoresistive manganites|V. Kiryukhin,A. Borissov,J. S. Ahn,Q. Huang,J. W. Lynn,S-W. Cheong###
(257511, 257522)
 Neutron scattering measurements on a magnetoresistive manganiteLa0.75(Ca0.45Sr0.55)0.25MnO3 show that uncorrelateddynamic polaronic lattice distortions are present in both the orthorhombic (O)and rhombohedral (R) paramagnetic phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.0225,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.027500000000000004,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(O)
###Uncorrelated and correlated nanoscale lattice distortions in the paramagnetic phase of magnetoresistive manganites|V. Kiryukhin,A. Borissov,J. S. Ahn,Q. Huang,J. W. Lynn,S-W. Cheong###
(257551, 257553)
 Neutron scattering measurements on a magnetoresistive manganiteLa0.75(Ca0.45Sr0.55)0.25MnO3 show that uncorrelateddynamic polaronic lattice distortions are present in both the orthorhombic (O)and rhombohedral (R) paramagnetic phases.
Featurization successful!
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Uncorrelated and correlated nanoscale lattice distortions in the paramagnetic phase of magnetoresistive manganites|V. Kiryukhin,A. Borissov,J. S. Ahn,Q. Huang,J. W. Lynn,S-W. Cheong###
(257592, 257592)
 The uncorrelated distortions do notexhibit any significant anomaly at the O-to-R<missing VAR> transition.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Uncorrelated and correlated nanoscale lattice distortions in the paramagnetic phase of magnetoresistive manganites|V. Kiryukhin,A. Borissov,J. S. Ahn,Q. Huang,J. W. Lynn,S-W. Cheong###
(257669, 257669)
 In contrast, recent x<missing VAR>-ray measurementsand our neutron data show that polaronic correlations are present only in the Ophase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Uncorrelated and correlated nanoscale lattice distortions in the paramagnetic phase of magnetoresistive manganites|V. Kiryukhin,A. Borissov,J. S. Ahn,Q. Huang,J. W. Lynn,S-W. Cheong###
(257709, 257709)
 In contrast, recent x<missing VAR>-ray measurementsand our neutron data show that polaronic correlations are present only in the Ophase.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Uncorrelated and correlated nanoscale lattice distortions in the paramagnetic phase of magnetoresistive manganites|V. Kiryukhin,A. Borissov,J. S. Ahn,Q. Huang,J. W. Lynn,S-W. Cheong###
(257715, 257715)
 In optimally doped manganites, the R<missing VAR> phase is metallic, while the Oparamagnetic state is insulating (or semiconducting).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Uncorrelated and correlated nanoscale lattice distortions in the paramagnetic phase of magnetoresistive manganites|V. Kiryukhin,A. Borissov,J. S. Ahn,Q. Huang,J. W. Lynn,S-W. Cheong###
(257739, 257739)
 In optimally doped manganites, the R<missing VAR> phase is metallic, while the Oparamagnetic state is insulating (or semiconducting).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Spin-dependent transport through magnetic nanojunctions|Kamil Walczak,Gloria Platero###
(258191, 258191)
 Coherent electronic transport through a molecular device is studied usingnon-equilibrium Greens<missing VAR> function (NEGF) formalism.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Spin-dependent transport through magnetic nanojunctions|Kamil Walczak,Gloria Platero###
(258194, 258194)
 Coherent electronic transport through a molecular device is studied usingnon-equilibrium Greens<missing VAR> function (NEGF) formalism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrFeO3-d
###Magnetization and magnetoresistance in insulating phases of SrFeO3-d|S. Srinath,M. Mahesh Kumar,M. L. Post,H. Srikanth###
(258478, 258483)
Magnetization and magnetoresistance in insulating phases of SrFeO3-d.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[272.0, 230, 'K', 5]

SrFeO3-d
###Magnetization and magnetoresistance in insulating phases of SrFeO3-d|S. Srinath,M. Mahesh Kumar,M. L. Post,H. Srikanth###
(258511, 258516)
 We report the synthesis and properties of two new insulating phases ofSrFeO3-d with introduction of oxygen deficiencies in metallic SrFeO3 ; one with0.15 < d<missing VAR> < 0.19 (sample A)and the other above d<missing VAR>  0.19 (sample B).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[239.0, 230, 'K', 4]

SrFeO3
###Magnetization and magnetoresistance in insulating phases of SrFeO3-d|S. Srinath,M. Mahesh Kumar,M. L. Post,H. Srikanth###
(258532, 258535)
 We report the synthesis and properties of two new insulating phases ofSrFeO3-d with introduction of oxygen deficiencies in metallic SrFeO3 ; one with0.15 < d<missing VAR> < 0.19 (sample A)and the other above d<missing VAR>  0.19 (sample B).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[220.0, 230, 'K', 4]

B
###Magnetization and magnetoresistance in insulating phases of SrFeO3-d|S. Srinath,M. Mahesh Kumar,M. L. Post,H. Srikanth###
(258575, 258575)
 We report the synthesis and properties of two new insulating phases ofSrFeO3-d with introduction of oxygen deficiencies in metallic SrFeO3 ; one with0.15 < d<missing VAR> < 0.19 (sample A)and the other above d<missing VAR>  0.19 (sample B).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[180.0, 230, 'K', 4]

(CO)
###Magnetization and magnetoresistance in insulating phases of SrFeO3-d|S. Srinath,M. Mahesh Kumar,M. L. Post,H. Srikanth###
(258600, 258603)
 Sample Ashows large negative magnetoresistance around the charged ordering (CO)temperature with magnetic anomalies seen in the temperature dependentresistivity,magnetization and M<missing VAR>-H hysteresis loops.
Featurization successful!
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 230, 'K', 3]

H
###Magnetization and magnetoresistance in insulating phases of SrFeO3-d|S. Srinath,M. Mahesh Kumar,M. L. Post,H. Srikanth###
(258633, 258633)
 Sample Ashows large negative magnetoresistance around the charged ordering (CO)temperature with magnetic anomalies seen in the temperature dependentresistivity,magnetization and M<missing VAR>-H hysteresis loops.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 230, 'K', 3]

B
###Magnetization and magnetoresistance in insulating phases of SrFeO3-d|S. Srinath,M. Mahesh Kumar,M. L. Post,H. Srikanth###
(258642, 258642)
 Sample B shows a smoothinsulating behavior with no thermal hysteresis in the resistivity and with asmall positive magnetoresistance.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 230, 'K', 2]

Fe4/Fe3
###Magnetization and magnetoresistance in insulating phases of SrFeO3-d|S. Srinath,M. Mahesh Kumar,M. L. Post,H. Srikanth###
(258806, 258810)
 These observations are discussed in thecontext of magnetic interactions associated with the varying Fe4/Fe3 ratio.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[51.0, 230, 'K', 1]

Dy
###Heat capacity and magnetoresistance in Dy(Co,Si)2 compounds|Niraj K. Singh,K. G. Suresh,A. K. Nigam,S. K. Malik###
(258833, 258833)
Heat capacity and magnetoresistance in Dy(Co,Si)2 compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 0, ',', 1],[42.0, 0.075, 'and', 1],[143.0, 11.4, 'JKg', 3],[152.0, 5.4, 'K', 3],[186.0, 5.4, 'JKg', 4],[194.0, 3, 'K', 4],[220.0, 32, '%', 5]

Co
###Heat capacity and magnetoresistance in Dy(Co,Si)2 compounds|Niraj K. Singh,K. G. Suresh,A. K. Nigam,S. K. Malik###
(258835, 258835)
Heat capacity and magnetoresistance in Dy(Co,Si)2 compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 0, ',', 1],[40.0, 0.075, 'and', 1],[141.0, 11.4, 'JKg', 3],[150.0, 5.4, 'K', 3],[184.0, 5.4, 'JKg', 4],[192.0, 3, 'K', 4],[218.0, 32, '%', 5]

Si
###Heat capacity and magnetoresistance in Dy(Co,Si)2 compounds|Niraj K. Singh,K. G. Suresh,A. K. Nigam,S. K. Malik###
(258837, 258837)
Heat capacity and magnetoresistance in Dy(Co,Si)2 compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 0, ',', 1],[38.0, 0.075, 'and', 1],[139.0, 11.4, 'JKg', 3],[148.0, 5.4, 'K', 3],[182.0, 5.4, 'JKg', 4],[190.0, 3, 'K', 4],[216.0, 32, '%', 5]

Dy
###Heat capacity and magnetoresistance in Dy(Co,Si)2 compounds|Niraj K. Singh,K. G. Suresh,A. K. Nigam,S. K. Malik###
(258861, 258861)
 Magnetocaloric effect and magnetoresistance have been studied inDy(Co1-xSix)2 [x<missing VAR>0, 0.075 and 0.15] compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 0, ',', 0],[14.0, 0.075, 'and', 0],[115.0, 11.4, 'JKg', 2],[124.0, 5.4, 'K', 2],[158.0, 5.4, 'JKg', 3],[166.0, 3, 'K', 3],[192.0, 32, '%', 4]

Co1-x
###Heat capacity and magnetoresistance in Dy(Co,Si)2 compounds|Niraj K. Singh,K. G. Suresh,A. K. Nigam,S. K. Malik###
(258863, 258866)
 Magnetocaloric effect and magnetoresistance have been studied inDy(Co1-xSix)2 [x<missing VAR>0, 0.075 and 0.15] compounds.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[7.0, 0, ',', 0],[9.0, 0.075, 'and', 0],[110.0, 11.4, 'JKg', 2],[119.0, 5.4, 'K', 2],[153.0, 5.4, 'JKg', 3],[161.0, 3, 'K', 3],[187.0, 32, '%', 4]

S
###Heat capacity and magnetoresistance in Dy(Co,Si)2 compounds|Niraj K. Singh,K. G. Suresh,A. K. Nigam,S. K. Malik###
(258930, 258930)
 Magnetocaloric effect has beencalculated in terms of adiabatic temperatue change (Delta Tad) as well asisothermal magnetic entropy change (Delta SM) using the heat capacity data.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 0, ',', 1],[55.0, 0.075, 'and', 1],[46.0, 11.4, 'JKg', 1],[55.0, 5.4, 'K', 1],[89.0, 5.4, 'JKg', 2],[97.0, 3, 'K', 2],[123.0, 32, '%', 3]

S
###Heat capacity and magnetoresistance in Dy(Co,Si)2 compounds|Niraj K. Singh,K. G. Suresh,A. K. Nigam,S. K. Malik###
(258955, 258955)
 Themaximum values of DeltaSM<missing VAR> and DeltaTad for DyCo2 are found to be 11.4 JKg-1K-1and 5.4 K, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 0, ',', 2],[80.0, 0.075, 'and', 2],[21.0, 11.4, 'JKg', 0],[30.0, 5.4, 'K', 0],[64.0, 5.4, 'JKg', 1],[72.0, 3, 'K', 1],[98.0, 32, '%', 2]

DyCo2
###Heat capacity and magnetoresistance in Dy(Co,Si)2 compounds|Niraj K. Singh,K. G. Suresh,A. K. Nigam,S. K. Malik###
(258965, 258967)
 Themaximum values of DeltaSM<missing VAR> and DeltaTad for DyCo2 are found to be 11.4 JKg-1K-1and 5.4 K, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 0, ',', 2],[90.0, 0.075, 'and', 2],[9.0, 11.4, 'JKg', 0],[18.0, 5.4, 'K', 0],[52.0, 5.4, 'JKg', 1],[60.0, 3, 'K', 1],[86.0, 32, '%', 2]

K
###Heat capacity and magnetoresistance in Dy(Co,Si)2 compounds|Niraj K. Singh,K. G. Suresh,A. K. Nigam,S. K. Malik###
(258979, 258979)
 Themaximum values of DeltaSM<missing VAR> and DeltaTad for DyCo2 are found to be 11.4 JKg-1K-1and 5.4 K, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 0, ',', 2],[104.0, 0.075, 'and', 2],[3.0, 11.4, 'JKg', 0],[6.0, 5.4, 'K', 0],[40.0, 5.4, 'JKg', 1],[48.0, 3, 'K', 1],[74.0, 32, '%', 2]

Si
###Heat capacity and magnetoresistance in Dy(Co,Si)2 compounds|Niraj K. Singh,K. G. Suresh,A. K. Nigam,S. K. Malik###
(259006, 259006)
 Both DSM and D<missing VAR>Tad decrease with Si concentration,reaching a value of 5.4 JKg-1K-1 and 3 K, respectively for x<missing VAR>0.15.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 0, ',', 3],[131.0, 0.075, 'and', 3],[30.0, 11.4, 'JKg', 1],[21.0, 5.4, 'K', 1],[13.0, 5.4, 'JKg', 0],[21.0, 3, 'K', 0],[47.0, 32, '%', 1]

K
###Heat capacity and magnetoresistance in Dy(Co,Si)2 compounds|Niraj K. Singh,K. G. Suresh,A. K. Nigam,S. K. Malik###
(259022, 259022)
 Both DSM and D<missing VAR>Tad decrease with Si concentration,reaching a value of 5.4 JKg-1K-1 and 3 K, respectively for x<missing VAR>0.15.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 0, ',', 3],[147.0, 0.075, 'and', 3],[46.0, 11.4, 'JKg', 1],[37.0, 5.4, 'K', 1],[3.0, 5.4, 'JKg', 0],[5.0, 3, 'K', 0],[31.0, 32, '%', 1]

DyCo2
###Heat capacity and magnetoresistance in Dy(Co,Si)2 compounds|Niraj K. Singh,K. G. Suresh,A. K. Nigam,S. K. Malik###
(259058, 259060)
 The maximummagnetoresistance is found to about 32% in DyCo2, which decreases with increasein Si.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[185.0, 0, ',', 4],[183.0, 0.075, 'and', 4],[82.0, 11.4, 'JKg', 2],[73.0, 5.4, 'K', 2],[39.0, 5.4, 'JKg', 1],[31.0, 3, 'K', 1],[5.0, 32, '%', 0]

Si
###Heat capacity and magnetoresistance in Dy(Co,Si)2 compounds|Niraj K. Singh,K. G. Suresh,A. K. Nigam,S. K. Malik###
(259074, 259074)
 The maximummagnetoresistance is found to about 32% in DyCo2, which decreases with increasein Si.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[201.0, 0, ',', 4],[199.0, 0.075, 'and', 4],[98.0, 11.4, 'JKg', 2],[89.0, 5.4, 'K', 2],[55.0, 5.4, 'JKg', 1],[47.0, 3, 'K', 1],[21.0, 32, '%', 0]

Ca3Ru2O7
###Colossal Magnetoresistance by Avoiding a Ferromagnetic State in the Mott System Ca3Ru2O7|X. N. Lin,Z. X. Zhou,V. Durairaj,P. Schlottmann,G. Cao###
(259412, 259417)
Colossal Magnetoresistance by Avoiding a Ferromagnetic State in the Mott System Ca3Ru2O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 56, 'K', 1],[49.0, 45, 'T', 1]

Ca3Ru2O7
###Colossal Magnetoresistance by Avoiding a Ferromagnetic State in the Mott System Ca3Ru2O7|X. N. Lin,Z. X. Zhou,V. Durairaj,P. Schlottmann,G. Cao###
(259430, 259435)
 Transport and magnetic studies of Ca3Ru2O7 for temperatures ranging from 0.4K to 56 K and magnetic fields, B, up to 45 T leads to strikingly differentbehavior when the field is applied along the different crystal axes.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 56, 'K', 0],[31.0, 45, 'T', 0]

K
###Colossal Magnetoresistance by Avoiding a Ferromagnetic State in the Mott System Ca3Ru2O7|X. N. Lin,Z. X. Zhou,V. Durairaj,P. Schlottmann,G. Cao###
(259448, 259448)
 Transport and magnetic studies of Ca3Ru2O7 for temperatures ranging from 0.4K to 56 K and magnetic fields, B, up to 45 T leads to strikingly differentbehavior when the field is applied along the different crystal axes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 56, 'K', 0],[18.0, 45, 'T', 0]

B
###Colossal Magnetoresistance by Avoiding a Ferromagnetic State in the Mott System Ca3Ru2O7|X. N. Lin,Z. X. Zhou,V. Durairaj,P. Schlottmann,G. Cao###
(259460, 259460)
 Transport and magnetic studies of Ca3Ru2O7 for temperatures ranging from 0.4K to 56 K and magnetic fields, B, up to 45 T leads to strikingly differentbehavior when the field is applied along the different crystal axes.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 56, 'K', 0],[6.0, 45, 'T', 0]

F
###Colossal Magnetoresistance by Avoiding a Ferromagnetic State in the Mott System Ca3Ru2O7|X. N. Lin,Z. X. Zhou,V. Durairaj,P. Schlottmann,G. Cao###
(259506, 259506)
 Aferromagnetic (FM) state with full spin polarization is achieved for Ba-axis,but colossal magnetoresistance is realized only for Bb<missing VAR>-axis.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 56, 'K', 1],[40.0, 45, 'T', 1]

B
###Colossal Magnetoresistance by Avoiding a Ferromagnetic State in the Mott System Ca3Ru2O7|X. N. Lin,Z. X. Zhou,V. Durairaj,P. Schlottmann,G. Cao###
(259526, 259526)
 Aferromagnetic (FM) state with full spin polarization is achieved for Ba-axis,but colossal magnetoresistance is realized only for Bb<missing VAR>-axis.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 56, 'K', 1],[60.0, 45, 'T', 1]

B
###Colossal Magnetoresistance by Avoiding a Ferromagnetic State in the Mott System Ca3Ru2O7|X. N. Lin,Z. X. Zhou,V. Durairaj,P. Schlottmann,G. Cao###
(259547, 259547)
 Aferromagnetic (FM) state with full spin polarization is achieved for Ba-axis,but colossal magnetoresistance is realized only for Bb<missing VAR>-axis.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 56, 'K', 1],[81.0, 45, 'T', 1]

B
###Colossal Magnetoresistance by Avoiding a Ferromagnetic State in the Mott System Ca3Ru2O7|X. N. Lin,Z. X. Zhou,V. Durairaj,P. Schlottmann,G. Cao###
(259555, 259555)
 For Bc<missing VAR>-axis,Shubnikov-de Haas oscillations are observed and followed by a less resistivestate than for Ba.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 56, 'K', 2],[89.0, 45, 'T', 2]

B
###Colossal Magnetoresistance by Avoiding a Ferromagnetic State in the Mott System Ca3Ru2O7|X. N. Lin,Z. X. Zhou,V. Durairaj,P. Schlottmann,G. Cao###
(259593, 259593)
 For Bc<missing VAR>-axis,Shubnikov-de Haas oscillations are observed and followed by a less resistivestate than for Ba.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 56, 'K', 2],[127.0, 45, 'T', 2]

F
###Colossal Magnetoresistance by Avoiding a Ferromagnetic State in the Mott System Ca3Ru2O7|X. N. Lin,Z. X. Zhou,V. Durairaj,P. Schlottmann,G. Cao###
(259618, 259618)
 Hence, in contrast to standard colossal magnetoresistivematerials, the FM<missing VAR> phase is the least favorable for electron hopping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 56, 'K', 3],[152.0, 45, 'T', 3]

K
###Colossal Magnetoresistance by Avoiding a Ferromagnetic State in the Mott System Ca3Ru2O7|X. N. Lin,Z. X. Zhou,V. Durairaj,P. Schlottmann,G. Cao###
(259671, 259671)
 Theseproperties together with highly unusual spin-charge-lattice coupling near theMott transition (48 K) are driven by the orbital degrees of freedom.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[220.0, 56, 'K', 4],[205.0, 45, 'T', 4]

Ga
###Magnetoresistance Anomalies in (Ga,Mn)As Epilayers with Perpendicular Magnetic Anisotropy|G. Xiang,A. W. Holleitner,B. L. Sheu,F. M. Mendoza,O. Maksimov,P. Schiffer,D. D. Awschalom,N. Samarth###
(259706, 259706)
Magnetoresistance Anomalies in (Ga,Mn)As Epilayers with Perpendicular Magnetic Anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Magnetoresistance Anomalies in (Ga,Mn)As Epilayers with Perpendicular Magnetic Anisotropy|G. Xiang,A. W. Holleitner,B. L. Sheu,F. M. Mendoza,O. Maksimov,P. Schiffer,D. D. Awschalom,N. Samarth###
(259708, 259708)
Magnetoresistance Anomalies in (Ga,Mn)As Epilayers with Perpendicular Magnetic Anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Magnetoresistance Anomalies in (Ga,Mn)As Epilayers with Perpendicular Magnetic Anisotropy|G. Xiang,A. W. Holleitner,B. L. Sheu,F. M. Mendoza,O. Maksimov,P. Schiffer,D. D. Awschalom,N. Samarth###
(259710, 259710)
Magnetoresistance Anomalies in (Ga,Mn)As Epilayers with Perpendicular Magnetic Anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###Magnetoresistance Anomalies in (Ga,Mn)As Epilayers with Perpendicular Magnetic Anisotropy|G. Xiang,A. W. Holleitner,B. L. Sheu,F. M. Mendoza,O. Maksimov,P. Schiffer,D. D. Awschalom,N. Samarth###
(259751, 259751)
 We report the observation of anomalies in the longitudinal magnetoresistanceof tensile-strained (Ga,Mn)As epilayers with perpendicular magnetic anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Magnetoresistance Anomalies in (Ga,Mn)As Epilayers with Perpendicular Magnetic Anisotropy|G. Xiang,A. W. Holleitner,B. L. Sheu,F. M. Mendoza,O. Maksimov,P. Schiffer,D. D. Awschalom,N. Samarth###
(259753, 259753)
 We report the observation of anomalies in the longitudinal magnetoresistanceof tensile-strained (Ga,Mn)As epilayers with perpendicular magnetic anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Magnetoresistance Anomalies in (Ga,Mn)As Epilayers with Perpendicular Magnetic Anisotropy|G. Xiang,A. W. Holleitner,B. L. Sheu,F. M. Mendoza,O. Maksimov,P. Schiffer,D. D. Awschalom,N. Samarth###
(259755, 259755)
 We report the observation of anomalies in the longitudinal magnetoresistanceof tensile-strained (Ga,Mn)As epilayers with perpendicular magnetic anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Magnetoresistance Anomalies in (Ga,Mn)As Epilayers with Perpendicular Magnetic Anisotropy|G. Xiang,A. W. Holleitner,B. L. Sheu,F. M. Mendoza,O. Maksimov,P. Schiffer,D. D. Awschalom,N. Samarth###
(259953, 259953)
 Thisinterpretation is reinforced by carrying out angular sweeps of vecH,revealing an antisymmetric dependence on the helicity of the field sweep.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La1.4Ca1.6Mn2O7
###Magneto-transport characteristics of La1.4Ca1.6Mn2O7 thin film deposited by spray pyrolysis|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(259996, 260003)
Magneto-transport characteristics of La1.4Ca1.6Mn2O7 thin film deposited by spray pyrolysis.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0.13333333333333333,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.11666666666666665,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 107, 'K', 2],[158.0, 225, 'K', 3],[185.0, 55, 'K', 4],[264.0, 30, 'K', 7],[308.0, 77, 'K', 8],[319.0, 5, '%', 8],[323.0, 0.6, 'kOe', 8],[329.0, 13, '%', 8],[333.0, 3, 'kOe', 8]

La1.4Ca1.6Mn2O7
###Magneto-transport characteristics of La1.4Ca1.6Mn2O7 thin film deposited by spray pyrolysis|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(260032, 260039)
 Polycrystalline thin films of double layer manganite La1.4Ca1.6Mn2O7(DLCM<missing VAR>O) have been deposited by nebulized spray pyrolysis on single crystalLaAlO3 substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0.13333333333333333,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.11666666666666665,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 107, 'K', 1],[122.0, 225, 'K', 2],[149.0, 55, 'K', 3],[228.0, 30, 'K', 6],[272.0, 77, 'K', 7],[283.0, 5, '%', 7],[287.0, 0.6, 'kOe', 7],[293.0, 13, '%', 7],[297.0, 3, 'kOe', 7]

C
###Magneto-transport characteristics of La1.4Ca1.6Mn2O7 thin film deposited by spray pyrolysis|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(260045, 260045)
 Polycrystalline thin films of double layer manganite La1.4Ca1.6Mn2O7(DLCM<missing VAR>O) have been deposited by nebulized spray pyrolysis on single crystalLaAlO3 substrates.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 107, 'K', 1],[116.0, 225, 'K', 2],[143.0, 55, 'K', 3],[222.0, 30, 'K', 6],[266.0, 77, 'K', 7],[277.0, 5, '%', 7],[281.0, 0.6, 'kOe', 7],[287.0, 13, '%', 7],[291.0, 3, 'kOe', 7]

O
###Magneto-transport characteristics of La1.4Ca1.6Mn2O7 thin film deposited by spray pyrolysis|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(260047, 260047)
 Polycrystalline thin films of double layer manganite La1.4Ca1.6Mn2O7(DLCM<missing VAR>O) have been deposited by nebulized spray pyrolysis on single crystalLaAlO3 substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 107, 'K', 1],[114.0, 225, 'K', 2],[141.0, 55, 'K', 3],[220.0, 30, 'K', 6],[264.0, 77, 'K', 7],[275.0, 5, '%', 7],[279.0, 0.6, 'kOe', 7],[285.0, 13, '%', 7],[289.0, 3, 'kOe', 7]

LaAlO3
###Magneto-transport characteristics of La1.4Ca1.6Mn2O7 thin film deposited by spray pyrolysis|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(260071, 260074)
 Polycrystalline thin films of double layer manganite La1.4Ca1.6Mn2O7(DLCM<missing VAR>O) have been deposited by nebulized spray pyrolysis on single crystalLaAlO3 substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 107, 'K', 1],[87.0, 225, 'K', 2],[114.0, 55, 'K', 3],[193.0, 30, 'K', 6],[237.0, 77, 'K', 7],[248.0, 5, '%', 7],[252.0, 0.6, 'kOe', 7],[258.0, 13, '%', 7],[262.0, 3, 'kOe', 7]

C
###Magneto-transport characteristics of La1.4Ca1.6Mn2O7 thin film deposited by spray pyrolysis|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(260115, 260115)
 These single phase films having grain size in the range70-100 nm exhibit ferromagnetic transition at T<missing VAR>C  107K.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 107, 'K', 0],[46.0, 225, 'K', 1],[73.0, 55, 'K', 2],[152.0, 30, 'K', 5],[196.0, 77, 'K', 6],[207.0, 5, '%', 6],[211.0, 0.6, 'kOe', 6],[217.0, 13, '%', 6],[221.0, 3, 'kOe', 6]

P
###Magneto-transport characteristics of La1.4Ca1.6Mn2O7 thin film deposited by spray pyrolysis|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(260186, 260186)
 Insulator/semiconductor to metal transitionoccurs at a lower temperature T<missing VAR>P  55K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 107, 'K', 2],[25.0, 225, 'K', 1],[2.0, 55, 'K', 0],[81.0, 30, 'K', 3],[125.0, 77, 'K', 4],[136.0, 5, '%', 4],[140.0, 0.6, 'kOe', 4],[146.0, 13, '%', 4],[150.0, 3, 'kOe', 4]

C
###Magneto-transport characteristics of La1.4Ca1.6Mn2O7 thin film deposited by spray pyrolysis|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(260200, 260200)
 The transport mechanism above T<missing VAR>C isof Motts<missing VAR> variable range hopping type.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 107, 'K', 3],[39.0, 225, 'K', 2],[12.0, 55, 'K', 1],[67.0, 30, 'K', 2],[111.0, 77, 'K', 3],[122.0, 5, '%', 3],[126.0, 0.6, 'kOe', 3],[132.0, 13, '%', 3],[136.0, 3, 'kOe', 3]

C
###Magneto-transport characteristics of La1.4Ca1.6Mn2O7 thin film deposited by spray pyrolysis|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(260222, 260222)
 Below T<missing VAR>C the current-voltagecharacteristics show non-linear behaviour that becomes stronger with decreasingtemperature.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 107, 'K', 4],[61.0, 225, 'K', 3],[34.0, 55, 'K', 2],[45.0, 30, 'K', 1],[89.0, 77, 'K', 2],[100.0, 5, '%', 2],[104.0, 0.6, 'kOe', 2],[110.0, 13, '%', 2],[114.0, 3, 'kOe', 2]

At
###Magneto-transport characteristics of La1.4Ca1.6Mn2O7 thin film deposited by spray pyrolysis|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(260255, 260255)
 At low temperatures below T<missing VAR>CA  30K a magnetically frustratedspin canted state is observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 107, 'K', 5],[94.0, 225, 'K', 4],[67.0, 55, 'K', 3],[12.0, 30, 'K', 0],[56.0, 77, 'K', 1],[67.0, 5, '%', 1],[71.0, 0.6, 'kOe', 1],[77.0, 13, '%', 1],[81.0, 3, 'kOe', 1]

C
###Magneto-transport characteristics of La1.4Ca1.6Mn2O7 thin film deposited by spray pyrolysis|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(260264, 260264)
 At low temperatures below T<missing VAR>CA  30K a magnetically frustratedspin canted state is observed.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 107, 'K', 5],[103.0, 225, 'K', 4],[76.0, 55, 'K', 3],[3.0, 30, 'K', 0],[47.0, 77, 'K', 1],[58.0, 5, '%', 1],[62.0, 0.6, 'kOe', 1],[68.0, 13, '%', 1],[72.0, 3, 'kOe', 1]

C
###Magneto-transport characteristics of La1.4Ca1.6Mn2O7 thin film deposited by spray pyrolysis|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(260291, 260291)
 The DLCM<missing VAR>O films exhibit resonable low fieldmagnetoresistance and at 77K the magnetoresistance ratio is  5% at 0.6 kOe and 13% at 3 kOe.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[174.0, 107, 'K', 6],[130.0, 225, 'K', 5],[103.0, 55, 'K', 4],[24.0, 30, 'K', 1],[20.0, 77, 'K', 0],[31.0, 5, '%', 0],[35.0, 0.6, 'kOe', 0],[41.0, 13, '%', 0],[45.0, 3, 'kOe', 0]

O
###Magneto-transport characteristics of La1.4Ca1.6Mn2O7 thin film deposited by spray pyrolysis|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(260293, 260293)
 The DLCM<missing VAR>O films exhibit resonable low fieldmagnetoresistance and at 77K the magnetoresistance ratio is  5% at 0.6 kOe and 13% at 3 kOe.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[176.0, 107, 'K', 6],[132.0, 225, 'K', 5],[105.0, 55, 'K', 4],[26.0, 30, 'K', 1],[18.0, 77, 'K', 0],[29.0, 5, '%', 0],[33.0, 0.6, 'kOe', 0],[39.0, 13, '%', 0],[43.0, 3, 'kOe', 0]

In
###The inelastic relaxation time due to electron-electron collisions in high-mobility two-dimensional systems under microwave radiations|X. L. Lei,S. Y. Liu###
(260384, 260384)
 In some theoretical analyses of microwave-induced magnetoresistanceoscillations in high-mobility two-dimensional systems, the inelasticrelaxation time tauin due to electron-electron scattering is evaluatedusing an equilibrium distribution function f<missing VAR>0 in the absence of radiation,and it is concluded that tauin is much larger than tauq<missing VAR>, thesingle-particle relaxation time due to impurity scattering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[217.0, 0, ',', 2]

K
###The inelastic relaxation time due to electron-electron collisions in high-mobility two-dimensional systems under microwave radiations|X. L. Lei,S. Y. Liu###
(260645, 260645)
 Estimating tauin using an approximatenonequilibrium distribution function rather than using f<missing VAR>0, one will find thesystem to be in the opposite limit 1/tauinll 1/tauq<missing VAR> even for T<missing VAR>0 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 0, ',', 0]

In
###Radiation-induced magnetotransport in high-mobility two-dimensional systems: Role of electron heating|X. L. Lei,S. Y. Liu###
(260990, 260990)
 In addition, the suppression of the magnetoresistancecaused by low-frequency radiation in the higher magnetic field side is alsodemonstrated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgB2
###Magnetoresistivity in MgB2 as a probe of disorder in p- and s-bands|I. Pallecchi,V. Ferrando,E. Galleani D'Agliano,D. Marre',M. Monni,M. Putti,C. Tarantini,F. Gatti,H. U. Aebersold,E. Lehmann,X. X. Xi,E. G. Haanappel,C. Ferdeghini###
(261048, 261050)
Magnetoresistivity in MgB2 as a probe of disorder in p<missing VAR>- and s<missing VAR>-bands.
Featurization terminated normally.
0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 45, 'Tesla', 1],[266.0, 7.7, 'X', 4]

In
###Magnetoresistivity in MgB2 as a probe of disorder in p- and s-bands|I. Pallecchi,V. Ferrando,E. Galleani D'Agliano,D. Marre',M. Monni,M. Putti,C. Tarantini,F. Gatti,H. U. Aebersold,E. Lehmann,X. X. Xi,E. G. Haanappel,C. Ferdeghini###
(261074, 261074)
 In this paper we present normal state magnetoresistivity data of magnesiumdiboride epitaxial thin films with different levels of disorder, measured at42K in magnetic fields up to 45 Tesla.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 45, 'Tesla', 0],[242.0, 7.7, 'X', 3]

K
###Magnetoresistivity in MgB2 as a probe of disorder in p- and s-bands|I. Pallecchi,V. Ferrando,E. Galleani D'Agliano,D. Marre',M. Monni,M. Putti,C. Tarantini,F. Gatti,H. U. Aebersold,E. Lehmann,X. X. Xi,E. G. Haanappel,C. Ferdeghini###
(261122, 261122)
 In this paper we present normal state magnetoresistivity data of magnesiumdiboride epitaxial thin films with different levels of disorder, measured at42K in magnetic fields up to 45 Tesla.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 45, 'Tesla', 0],[194.0, 7.7, 'X', 3]

C
###Magnetoresistivity in MgB2 as a probe of disorder in p- and s-bands|I. Pallecchi,V. Ferrando,E. Galleani D'Agliano,D. Marre',M. Monni,M. Putti,C. Tarantini,F. Gatti,H. U. Aebersold,E. Lehmann,X. X. Xi,E. G. Haanappel,C. Ferdeghini###
(261328, 261328)
 We demonstrate that the undopedunirradiated thin film has p<missing VAR> scattering times smaller than s<missing VAR> ones; uponirradiation, both bands become increasingly more disordered; eventually thehighly irradiated sample (neutron fluence 7.7X1017 cm-2) and the C-doped samplehave comparable scattering times in the two types of bands.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[195.0, 45, 'Tesla', 3],[12.0, 7.7, 'X', 0]

S
###Effect of charge state in nearby quantum dots on quantum Hall effect|K. Takehana,T. Takamasu,G. Kido,H. Henini###
(261482, 261482)
 Magnetoresistance measurements have been performed on a gated two-dimensionalelectron system (2DES) separated by a thin barrier layer from a layer of InAsself-assembled quantum dots (Q<missing VAR>Ds).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 2, 'DES', 1],[189.0, 2, 'DES', 3],[276.0, 2, 'DES', 4]

InAs
###Effect of charge state in nearby quantum dots on quantum Hall effect|K. Takehana,T. Takamasu,G. Kido,H. Henini###
(261505, 261506)
 Magnetoresistance measurements have been performed on a gated two-dimensionalelectron system (2DES) separated by a thin barrier layer from a layer of InAsself-assembled quantum dots (Q<missing VAR>Ds).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 2, 'DES', 1],[165.0, 2, 'DES', 3],[252.0, 2, 'DES', 4]

Ds
###Effect of charge state in nearby quantum dots on quantum Hall effect|K. Takehana,T. Takamasu,G. Kido,H. Henini###
(261519, 261519)
 Magnetoresistance measurements have been performed on a gated two-dimensionalelectron system (2DES) separated by a thin barrier layer from a layer of InAsself-assembled quantum dots (Q<missing VAR>Ds).
EXCEPTION 3: IndexError for Ds
Ds
[41.0, 2, 'DES', 1],[152.0, 2, 'DES', 3],[239.0, 2, 'DES', 4]

F
###Effect of electric/magnetic field on pinned/biased moments at the interfaces of magnetic superlattices|P. Padhan,W. Prellier###
(261828, 261828)
 We have observed the pinned/biased moments in the superlattices consisting offerromagnetic (FM) SrRuO3 (SR<missing VAR>O) and antiferromagnetic (AFM) SrMnO3(SM<missing VAR>O)bilayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrRuO3
###Effect of electric/magnetic field on pinned/biased moments at the interfaces of magnetic superlattices|P. Padhan,W. Prellier###
(261832, 261835)
 We have observed the pinned/biased moments in the superlattices consisting offerromagnetic (FM) SrRuO3 (SR<missing VAR>O) and antiferromagnetic (AFM) SrMnO3(SM<missing VAR>O)bilayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Effect of electric/magnetic field on pinned/biased moments at the interfaces of magnetic superlattices|P. Padhan,W. Prellier###
(261838, 261838)
 We have observed the pinned/biased moments in the superlattices consisting offerromagnetic (FM) SrRuO3 (SR<missing VAR>O) and antiferromagnetic (AFM) SrMnO3(SM<missing VAR>O)bilayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Effect of electric/magnetic field on pinned/biased moments at the interfaces of magnetic superlattices|P. Padhan,W. Prellier###
(261840, 261840)
 We have observed the pinned/biased moments in the superlattices consisting offerromagnetic (FM) SrRuO3 (SR<missing VAR>O) and antiferromagnetic (AFM) SrMnO3(SM<missing VAR>O)bilayer.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Effect of electric/magnetic field on pinned/biased moments at the interfaces of magnetic superlattices|P. Padhan,W. Prellier###
(261849, 261849)
 We have observed the pinned/biased moments in the superlattices consisting offerromagnetic (FM) SrRuO3 (SR<missing VAR>O) and antiferromagnetic (AFM) SrMnO3(SM<missing VAR>O)bilayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrMnO3
###Effect of electric/magnetic field on pinned/biased moments at the interfaces of magnetic superlattices|P. Padhan,W. Prellier###
(261853, 261856)
 We have observed the pinned/biased moments in the superlattices consisting offerromagnetic (FM) SrRuO3 (SR<missing VAR>O) and antiferromagnetic (AFM) SrMnO3(SM<missing VAR>O)bilayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Effect of electric/magnetic field on pinned/biased moments at the interfaces of magnetic superlattices|P. Padhan,W. Prellier###
(261860, 261860)
 We have observed the pinned/biased moments in the superlattices consisting offerromagnetic (FM) SrRuO3 (SR<missing VAR>O) and antiferromagnetic (AFM) SrMnO3(SM<missing VAR>O)bilayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Effect of electric/magnetic field on pinned/biased moments at the interfaces of magnetic superlattices|P. Padhan,W. Prellier###
(261862, 261862)
 We have observed the pinned/biased moments in the superlattices consisting offerromagnetic (FM) SrRuO3 (SR<missing VAR>O) and antiferromagnetic (AFM) SrMnO3(SM<missing VAR>O)bilayer.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Effect of electric/magnetic field on pinned/biased moments at the interfaces of magnetic superlattices|P. Padhan,W. Prellier###
(261875, 261875)
 The alternate stacking of SR<missing VAR>O and SM<missing VAR>O leading to a low fieldpositive magnetoresistance with enhanced hysteretic field dependentmagnetoresistance under the application of the out-of-plane magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Effect of electric/magnetic field on pinned/biased moments at the interfaces of magnetic superlattices|P. Padhan,W. Prellier###
(261877, 261877)
 The alternate stacking of SR<missing VAR>O and SM<missing VAR>O leading to a low fieldpositive magnetoresistance with enhanced hysteretic field dependentmagnetoresistance under the application of the out-of-plane magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Effect of electric/magnetic field on pinned/biased moments at the interfaces of magnetic superlattices|P. Padhan,W. Prellier###
(261881, 261881)
 The alternate stacking of SR<missing VAR>O and SM<missing VAR>O leading to a low fieldpositive magnetoresistance with enhanced hysteretic field dependentmagnetoresistance under the application of the out-of-plane magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Effect of electric/magnetic field on pinned/biased moments at the interfaces of magnetic superlattices|P. Padhan,W. Prellier###
(261883, 261883)
 The alternate stacking of SR<missing VAR>O and SM<missing VAR>O leading to a low fieldpositive magnetoresistance with enhanced hysteretic field dependentmagnetoresistance under the application of the out-of-plane magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Effect of electric/magnetic field on pinned/biased moments at the interfaces of magnetic superlattices|P. Padhan,W. Prellier###
(261962, 261962)
 Weattribute these effects to the observed biased/pinned magnetic moments in theSR<missing VAR>O layer in the vicinity of the interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Effect of electric/magnetic field on pinned/biased moments at the interfaces of magnetic superlattices|P. Padhan,W. Prellier###
(261964, 261964)
 Weattribute these effects to the observed biased/pinned magnetic moments in theSR<missing VAR>O layer in the vicinity of the interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Effect of electric/magnetic field on pinned/biased moments at the interfaces of magnetic superlattices|P. Padhan,W. Prellier###
(261981, 261981)
 In addition, the biased/pinnedmoments can be oriented under the application of either the out-of-planemagnetic field or a combination of out-of-plane magnetic field and in-planeelectric field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Effect of electric/magnetic field on pinned/biased moments at the interfaces of magnetic superlattices|P. Padhan,W. Prellier###
(262084, 262084)
 These results will bring new insights in the understanding ofthe coupling at the AFM<missing VAR>/FM<missing VAR> interface which can be useful for creating newexotic phenomena at the interfaces of the multilayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Effect of electric/magnetic field on pinned/biased moments at the interfaces of magnetic superlattices|P. Padhan,W. Prellier###
(262087, 262087)
 These results will bring new insights in the understanding ofthe coupling at the AFM<missing VAR>/FM<missing VAR> interface which can be useful for creating newexotic phenomena at the interfaces of the multilayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Dependence of tunnel magnetoresistance in MgO based magnetic tunnel junctions on Ar pressure during MgO sputtering|Shoji Ikeda,Jun Hayakawa,Young Min Lee,Ryutaro Sasaki,Toshiyasu Meguro,Fumihiro Matsukura,Hideo Ohno###
(262142, 262143)
Dependence of tunnel magnetoresistance in MgO based magnetic tunnel junctions on Ar pressure during MgO sputtering.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 10, 'mTorr', 2],[155.0, 355, '%', 3],[166.0, 578, '%', 3],[170.0, 5, 'K', 3],[182.0, 325, 'C', 3],[307.0, 10, 'ohm', 4],[314.0, 27, '%', 4],[322.0, 0.8, 'ohm', 4],[325.0, 2, ',', 4],[328.0, 77, '%', 4],[343.0, 2, ',', 4],[346.0, 130, '%', 4],[354.0, 1.7, 'ohm', 4],[357.0, 2, ',', 4],[362.0, 165, '%', 4],[370.0, 2.9, 'ohm', 4]

Ar
###Dependence of tunnel magnetoresistance in MgO based magnetic tunnel junctions on Ar pressure during MgO sputtering|Shoji Ikeda,Jun Hayakawa,Young Min Lee,Ryutaro Sasaki,Toshiyasu Meguro,Fumihiro Matsukura,Hideo Ohno###
(262155, 262155)
Dependence of tunnel magnetoresistance in MgO based magnetic tunnel junctions on Ar pressure during MgO sputtering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 10, 'mTorr', 2],[143.0, 355, '%', 3],[154.0, 578, '%', 3],[158.0, 5, 'K', 3],[170.0, 325, 'C', 3],[295.0, 10, 'ohm', 4],[302.0, 27, '%', 4],[310.0, 0.8, 'ohm', 4],[313.0, 2, ',', 4],[316.0, 77, '%', 4],[331.0, 2, ',', 4],[334.0, 130, '%', 4],[342.0, 1.7, 'ohm', 4],[345.0, 2, ',', 4],[350.0, 165, '%', 4],[358.0, 2.9, 'ohm', 4]

MgO
###Dependence of tunnel magnetoresistance in MgO based magnetic tunnel junctions on Ar pressure during MgO sputtering|Shoji Ikeda,Jun Hayakawa,Young Min Lee,Ryutaro Sasaki,Toshiyasu Meguro,Fumihiro Matsukura,Hideo Ohno###
(262161, 262162)
Dependence of tunnel magnetoresistance in MgO based magnetic tunnel junctions on Ar pressure during MgO sputtering.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 10, 'mTorr', 2],[136.0, 355, '%', 3],[147.0, 578, '%', 3],[151.0, 5, 'K', 3],[163.0, 325, 'C', 3],[288.0, 10, 'ohm', 4],[295.0, 27, '%', 4],[303.0, 0.8, 'ohm', 4],[306.0, 2, ',', 4],[309.0, 77, '%', 4],[324.0, 2, ',', 4],[327.0, 130, '%', 4],[335.0, 1.7, 'ohm', 4],[338.0, 2, ',', 4],[343.0, 165, '%', 4],[351.0, 2.9, 'ohm', 4]

CoFeB/MgO/CoFeB
###Dependence of tunnel magnetoresistance in MgO based magnetic tunnel junctions on Ar pressure during MgO sputtering|Shoji Ikeda,Jun Hayakawa,Young Min Lee,Ryutaro Sasaki,Toshiyasu Meguro,Fumihiro Matsukura,Hideo Ohno###
(262184, 262193)
 We investigated dependence of tunnel magnetoresistance effect inCoFeB/MgO/CoFeB magnetic tunnel junctions on Ar pressure during MgO-barriersputtering.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[45.0, 10, 'mTorr', 1],[105.0, 355, '%', 2],[116.0, 578, '%', 2],[120.0, 5, 'K', 2],[132.0, 325, 'C', 2],[257.0, 10, 'ohm', 3],[264.0, 27, '%', 3],[272.0, 0.8, 'ohm', 3],[275.0, 2, ',', 3],[278.0, 77, '%', 3],[293.0, 2, ',', 3],[296.0, 130, '%', 3],[304.0, 1.7, 'ohm', 3],[307.0, 2, ',', 3],[312.0, 165, '%', 3],[320.0, 2.9, 'ohm', 3]

Ar
###Dependence of tunnel magnetoresistance in MgO based magnetic tunnel junctions on Ar pressure during MgO sputtering|Shoji Ikeda,Jun Hayakawa,Young Min Lee,Ryutaro Sasaki,Toshiyasu Meguro,Fumihiro Matsukura,Hideo Ohno###
(262203, 262203)
 We investigated dependence of tunnel magnetoresistance effect inCoFeB/MgO/CoFeB magnetic tunnel junctions on Ar pressure during MgO-barriersputtering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 10, 'mTorr', 1],[95.0, 355, '%', 2],[106.0, 578, '%', 2],[110.0, 5, 'K', 2],[122.0, 325, 'C', 2],[247.0, 10, 'ohm', 3],[254.0, 27, '%', 3],[262.0, 0.8, 'ohm', 3],[265.0, 2, ',', 3],[268.0, 77, '%', 3],[283.0, 2, ',', 3],[286.0, 130, '%', 3],[294.0, 1.7, 'ohm', 3],[297.0, 2, ',', 3],[302.0, 165, '%', 3],[310.0, 2.9, 'ohm', 3]

MgO
###Dependence of tunnel magnetoresistance in MgO based magnetic tunnel junctions on Ar pressure during MgO sputtering|Shoji Ikeda,Jun Hayakawa,Young Min Lee,Ryutaro Sasaki,Toshiyasu Meguro,Fumihiro Matsukura,Hideo Ohno###
(262209, 262210)
 We investigated dependence of tunnel magnetoresistance effect inCoFeB/MgO/CoFeB magnetic tunnel junctions on Ar pressure during MgO-barriersputtering.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 10, 'mTorr', 1],[88.0, 355, '%', 2],[99.0, 578, '%', 2],[103.0, 5, 'K', 2],[115.0, 325, 'C', 2],[240.0, 10, 'ohm', 3],[247.0, 27, '%', 3],[255.0, 0.8, 'ohm', 3],[258.0, 2, ',', 3],[261.0, 77, '%', 3],[276.0, 2, ',', 3],[279.0, 130, '%', 3],[287.0, 1.7, 'ohm', 3],[290.0, 2, ',', 3],[295.0, 165, '%', 3],[303.0, 2.9, 'ohm', 3]

MgO
###Dependence of tunnel magnetoresistance in MgO based magnetic tunnel junctions on Ar pressure during MgO sputtering|Shoji Ikeda,Jun Hayakawa,Young Min Lee,Ryutaro Sasaki,Toshiyasu Meguro,Fumihiro Matsukura,Hideo Ohno###
(262224, 262225)
 Sputter deposition of MgO-barrier at high Ar pressure of 10 mTorrresulted in smooth surface and highly (001) oriented MgO.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 10, 'mTorr', 0],[73.0, 355, '%', 1],[84.0, 578, '%', 1],[88.0, 5, 'K', 1],[100.0, 325, 'C', 1],[225.0, 10, 'ohm', 2],[232.0, 27, '%', 2],[240.0, 0.8, 'ohm', 2],[243.0, 2, ',', 2],[246.0, 77, '%', 2],[261.0, 2, ',', 2],[264.0, 130, '%', 2],[272.0, 1.7, 'ohm', 2],[275.0, 2, ',', 2],[280.0, 165, '%', 2],[288.0, 2.9, 'ohm', 2]

Ar
###Dependence of tunnel magnetoresistance in MgO based magnetic tunnel junctions on Ar pressure during MgO sputtering|Shoji Ikeda,Jun Hayakawa,Young Min Lee,Ryutaro Sasaki,Toshiyasu Meguro,Fumihiro Matsukura,Hideo Ohno###
(262233, 262233)
 Sputter deposition of MgO-barrier at high Ar pressure of 10 mTorrresulted in smooth surface and highly (001) oriented MgO.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 10, 'mTorr', 0],[65.0, 355, '%', 1],[76.0, 578, '%', 1],[80.0, 5, 'K', 1],[92.0, 325, 'C', 1],[217.0, 10, 'ohm', 2],[224.0, 27, '%', 2],[232.0, 0.8, 'ohm', 2],[235.0, 2, ',', 2],[238.0, 77, '%', 2],[253.0, 2, ',', 2],[256.0, 130, '%', 2],[264.0, 1.7, 'ohm', 2],[267.0, 2, ',', 2],[272.0, 165, '%', 2],[280.0, 2.9, 'ohm', 2]

MgO
###Dependence of tunnel magnetoresistance in MgO based magnetic tunnel junctions on Ar pressure during MgO sputtering|Shoji Ikeda,Jun Hayakawa,Young Min Lee,Ryutaro Sasaki,Toshiyasu Meguro,Fumihiro Matsukura,Hideo Ohno###
(262259, 262260)
 Sputter deposition of MgO-barrier at high Ar pressure of 10 mTorrresulted in smooth surface and highly (001) oriented MgO.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 10, 'mTorr', 0],[38.0, 355, '%', 1],[49.0, 578, '%', 1],[53.0, 5, 'K', 1],[65.0, 325, 'C', 1],[190.0, 10, 'ohm', 2],[197.0, 27, '%', 2],[205.0, 0.8, 'ohm', 2],[208.0, 2, ',', 2],[211.0, 77, '%', 2],[226.0, 2, ',', 2],[229.0, 130, '%', 2],[237.0, 1.7, 'ohm', 2],[240.0, 2, ',', 2],[245.0, 165, '%', 2],[253.0, 2.9, 'ohm', 2]

MgO
###Dependence of tunnel magnetoresistance in MgO based magnetic tunnel junctions on Ar pressure during MgO sputtering|Shoji Ikeda,Jun Hayakawa,Young Min Lee,Ryutaro Sasaki,Toshiyasu Meguro,Fumihiro Matsukura,Hideo Ohno###
(262267, 262268)
 Using this MgO as atunnel barrier, tunnel magnetoresistance (TMR) ratio as high as 355% at roomtemperature (578% at 5K) was realized after annealing at 325 C or higher, whichappears to be related to a highly (001) oriented CoFeB texture promoted by thesmooth and highly oriented MgO.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 10, 'mTorr', 1],[30.0, 355, '%', 0],[41.0, 578, '%', 0],[45.0, 5, 'K', 0],[57.0, 325, 'C', 0],[182.0, 10, 'ohm', 1],[189.0, 27, '%', 1],[197.0, 0.8, 'ohm', 1],[200.0, 2, ',', 1],[203.0, 77, '%', 1],[218.0, 2, ',', 1],[221.0, 130, '%', 1],[229.0, 1.7, 'ohm', 1],[232.0, 2, ',', 1],[237.0, 165, '%', 1],[245.0, 2.9, 'ohm', 1]

CoFeB
###Dependence of tunnel magnetoresistance in MgO based magnetic tunnel junctions on Ar pressure during MgO sputtering|Shoji Ikeda,Jun Hayakawa,Young Min Lee,Ryutaro Sasaki,Toshiyasu Meguro,Fumihiro Matsukura,Hideo Ohno###
(262355, 262357)
 Using this MgO as atunnel barrier, tunnel magnetoresistance (TMR) ratio as high as 355% at roomtemperature (578% at 5K) was realized after annealing at 325 C or higher, whichappears to be related to a highly (001) oriented CoFeB texture promoted by thesmooth and highly oriented MgO.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 10, 'mTorr', 1],[57.0, 355, '%', 0],[46.0, 578, '%', 0],[42.0, 5, 'K', 0],[30.0, 325, 'C', 0],[93.0, 10, 'ohm', 1],[100.0, 27, '%', 1],[108.0, 0.8, 'ohm', 1],[111.0, 2, ',', 1],[114.0, 77, '%', 1],[129.0, 2, ',', 1],[132.0, 130, '%', 1],[140.0, 1.7, 'ohm', 1],[143.0, 2, ',', 1],[148.0, 165, '%', 1],[156.0, 2.9, 'ohm', 1]

MgO
###Dependence of tunnel magnetoresistance in MgO based magnetic tunnel junctions on Ar pressure during MgO sputtering|Shoji Ikeda,Jun Hayakawa,Young Min Lee,Ryutaro Sasaki,Toshiyasu Meguro,Fumihiro Matsukura,Hideo Ohno###
(262376, 262377)
 Using this MgO as atunnel barrier, tunnel magnetoresistance (TMR) ratio as high as 355% at roomtemperature (578% at 5K) was realized after annealing at 325 C or higher, whichappears to be related to a highly (001) oriented CoFeB texture promoted by thesmooth and highly oriented MgO.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 10, 'mTorr', 1],[78.0, 355, '%', 0],[67.0, 578, '%', 0],[63.0, 5, 'K', 0],[51.0, 325, 'C', 0],[73.0, 10, 'ohm', 1],[80.0, 27, '%', 1],[88.0, 0.8, 'ohm', 1],[91.0, 2, ',', 1],[94.0, 77, '%', 1],[109.0, 2, ',', 1],[112.0, 130, '%', 1],[120.0, 1.7, 'ohm', 1],[123.0, 2, ',', 1],[128.0, 165, '%', 1],[136.0, 2.9, 'ohm', 1]

Au
###Dependence of tunnel magnetoresistance in MgO based magnetic tunnel junctions on Ar pressure during MgO sputtering|Shoji Ikeda,Jun Hayakawa,Young Min Lee,Ryutaro Sasaki,Toshiyasu Meguro,Fumihiro Matsukura,Hideo Ohno###
(262405, 262405)
 Electron-beam lithography defineddeep-submicron MTJs having a low-resistivity Au underlayer with thehigh-pressure deposited MgO showed high TMR ratio at low resistance-areaproduct (R<missing VAR>A) below 10 ohm-um2 as 27% at R<missing VAR>A  0.8 ohm-um2, 77% at R<missing VAR>A  1.1ohm-um2, 130% at R<missing VAR>A  1.7 ohm-um2, and 165% at R<missing VAR>A  2.9 ohm-um2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 10, 'mTorr', 2],[107.0, 355, '%', 1],[96.0, 578, '%', 1],[92.0, 5, 'K', 1],[80.0, 325, 'C', 1],[45.0, 10, 'ohm', 0],[52.0, 27, '%', 0],[60.0, 0.8, 'ohm', 0],[63.0, 2, ',', 0],[66.0, 77, '%', 0],[81.0, 2, ',', 0],[84.0, 130, '%', 0],[92.0, 1.7, 'ohm', 0],[95.0, 2, ',', 0],[100.0, 165, '%', 0],[108.0, 2.9, 'ohm', 0]

MgO
###Dependence of tunnel magnetoresistance in MgO based magnetic tunnel junctions on Ar pressure during MgO sputtering|Shoji Ikeda,Jun Hayakawa,Young Min Lee,Ryutaro Sasaki,Toshiyasu Meguro,Fumihiro Matsukura,Hideo Ohno###
(262420, 262421)
 Electron-beam lithography defineddeep-submicron MTJs having a low-resistivity Au underlayer with thehigh-pressure deposited MgO showed high TMR ratio at low resistance-areaproduct (R<missing VAR>A) below 10 ohm-um2 as 27% at R<missing VAR>A  0.8 ohm-um2, 77% at R<missing VAR>A  1.1ohm-um2, 130% at R<missing VAR>A  1.7 ohm-um2, and 165% at R<missing VAR>A  2.9 ohm-um2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[182.0, 10, 'mTorr', 2],[122.0, 355, '%', 1],[111.0, 578, '%', 1],[107.0, 5, 'K', 1],[95.0, 325, 'C', 1],[29.0, 10, 'ohm', 0],[36.0, 27, '%', 0],[44.0, 0.8, 'ohm', 0],[47.0, 2, ',', 0],[50.0, 77, '%', 0],[65.0, 2, ',', 0],[68.0, 130, '%', 0],[76.0, 1.7, 'ohm', 0],[79.0, 2, ',', 0],[84.0, 165, '%', 0],[92.0, 2.9, 'ohm', 0]

CrO2
###Magnetoresistance in granular CrO2 : influence of crystallographic and magnetic microstructure|A. Bajpai,A. K. Nigam###
(262533, 262535)
Magnetoresistance in granular CrO2  influence of crystallographic and magnetic microstructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 200, 'K', 2],[159.0, 290, 'K', 4]

CrO2
###Magnetoresistance in granular CrO2 : influence of crystallographic and magnetic microstructure|A. Bajpai,A. K. Nigam###
(262574, 262576)
 We report magnetotransport measurements on high purity sintered samples ofspintronic CrO2 in an unexplored crystallographic regime between 5-300 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 200, 'K', 1],[118.0, 290, 'K', 3]

K
###Magnetoresistance in granular CrO2 : influence of crystallographic and magnetic microstructure|A. Bajpai,A. K. Nigam###
(262594, 262594)
 We report magnetotransport measurements on high purity sintered samples ofspintronic CrO2 in an unexplored crystallographic regime between 5-300 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 200, 'K', 1],[100.0, 290, 'K', 3]

H
###Magnetoresistance in granular CrO2 : influence of crystallographic and magnetic microstructure|A. Bajpai,A. K. Nigam###
(262616, 262616)
 Thenegative magnetoresistance (MR) as derived from R<missing VAR>H isotherms is observed to beunhysteretic up to temperatures as high as 200 K.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 200, 'K', 0],[78.0, 290, 'K', 2]

K
###Magnetoresistance in granular CrO2 : influence of crystallographic and magnetic microstructure|A. Bajpai,A. K. Nigam###
(262651, 262651)
 Between 240-290 K, R<missing VAR>Hisotherms exhibit some unusual features including a positive MR and strongpinning effects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 200, 'K', 1],[43.0, 290, 'K', 1]

H
###Magnetoresistance in granular CrO2 : influence of crystallographic and magnetic microstructure|A. Bajpai,A. K. Nigam###
(262655, 262655)
 Between 240-290 K, R<missing VAR>Hisotherms exhibit some unusual features including a positive MR and strongpinning effects.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 200, 'K', 1],[39.0, 290, 'K', 1]

B
###Magnetoresistance in granular CrO2 : influence of crystallographic and magnetic microstructure|A. Bajpai,A. K. Nigam###
(262752, 262752)
Qualitatively similar features with significantly enhanced MR are also observedwhen the G<missing VAR>B density is increased.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 200, 'K', 3],[58.0, 290, 'K', 1]

CrO2
###Observation of fluctuation induced tunneling conductance in polycrystalline CrO2|A. Bajpai,A. K. Nigam###
(262843, 262845)
Observation of fluctuation induced tunneling conductance in polycrystalline CrO2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CrO2
###Observation of fluctuation induced tunneling conductance in polycrystalline CrO2|A. Bajpai,A. K. Nigam###
(262858, 262860)
 Intergranular conduction in half metallic CrO2 is known to occur through acombination of spin dependent tunneling (driven by Coulomb Blockade (CB)effects) together with certain spin independent (SI) hopping processes.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(CB)
###Observation of fluctuation induced tunneling conductance in polycrystalline CrO2|A. Bajpai,A. K. Nigam###
(262894, 262897)
 Intergranular conduction in half metallic CrO2 is known to occur through acombination of spin dependent tunneling (driven by Coulomb Blockade (CB)effects) together with certain spin independent (SI) hopping processes.
Featurization successful!
0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(SI)
###Observation of fluctuation induced tunneling conductance in polycrystalline CrO2|A. Bajpai,A. K. Nigam###
(262913, 262916)
 Intergranular conduction in half metallic CrO2 is known to occur through acombination of spin dependent tunneling (driven by Coulomb Blockade (CB)effects) together with certain spin independent (SI) hopping processes.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CrO2
###Observation of fluctuation induced tunneling conductance in polycrystalline CrO2|A. Bajpai,A. K. Nigam###
(262936, 262938)
 Wepresent evidence that in polycrystalline CrO2 with enhanced grain size, boththese process (CB effect and SI Hopping) are suppressed and the functional formof conductance is best described by Fluctuation Induced Tunneling (FIT) in awide temperature range.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CB
###Observation of fluctuation induced tunneling conductance in polycrystalline CrO2|A. Bajpai,A. K. Nigam###
(262957, 262958)
 Wepresent evidence that in polycrystalline CrO2 with enhanced grain size, boththese process (CB effect and SI Hopping) are suppressed and the functional formof conductance is best described by Fluctuation Induced Tunneling (FIT) in awide temperature range.
Featurization terminated normally.
0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SI
###Observation of fluctuation induced tunneling conductance in polycrystalline CrO2|A. Bajpai,A. K. Nigam###
(262964, 262965)
 Wepresent evidence that in polycrystalline CrO2 with enhanced grain size, boththese process (CB effect and SI Hopping) are suppressed and the functional formof conductance is best described by Fluctuation Induced Tunneling (FIT) in awide temperature range.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FI
###Observation of fluctuation induced tunneling conductance in polycrystalline CrO2|A. Bajpai,A. K. Nigam###
(263002, 263003)
 Wepresent evidence that in polycrystalline CrO2 with enhanced grain size, boththese process (CB effect and SI Hopping) are suppressed and the functional formof conductance is best described by Fluctuation Induced Tunneling (FIT) in awide temperature range.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr2O3
###Observation of fluctuation induced tunneling conductance in polycrystalline CrO2|A. Bajpai,A. K. Nigam###
(263042, 263045)
 Similar features are observed when grain boundarydensity is increased by Cr2O3 or Cr2O5.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr2O5
###Observation of fluctuation induced tunneling conductance in polycrystalline CrO2|A. Bajpai,A. K. Nigam###
(263049, 263052)
 Similar features are observed when grain boundarydensity is increased by Cr2O3 or Cr2O5.
Featurization terminated normally.
0,0,0,0,0,0,0,0.7142857142857143,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FI
###Observation of fluctuation induced tunneling conductance in polycrystalline CrO2|A. Bajpai,A. K. Nigam###
(263067, 263068)
The spin dependent tunneling driven byFIT<missing VAR> results in the observation of significant enhancement and monotonictemperature dependence of magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CrO2
###Observation of fluctuation induced tunneling conductance in polycrystalline CrO2|A. Bajpai,A. K. Nigam###
(263125, 263127)
 Overall, the magnetotransportmeasurements in a thus far unexplored crystallographic regime of CrO2 revealthat the functional form of conductance strongly influences itsmagnetoresistive properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H2
###Inelastic transport in molecular spin valves|N. Jean,S. Sanvito###
(263217, 263218)
 We present a study of the effects of inelastic scattering on the transportproperties of various nanoscale devices, namely H2 molecules sandwichedbetween Pt contacts, and a spin-valve made by an organic molecule attached tomodel half-metal ferromagnetic current/voltage probes.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Inelastic transport in molecular spin valves|N. Jean,S. Sanvito###
(263227, 263227)
 We present a study of the effects of inelastic scattering on the transportproperties of various nanoscale devices, namely H2 molecules sandwichedbetween Pt contacts, and a spin-valve made by an organic molecule attached tomodel half-metal ferromagnetic current/voltage probes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Inelastic transport in molecular spin valves|N. Jean,S. Sanvito###
(263270, 263270)
 In both cases we use atight-binding Su-Schrieffer-Heeger Hamiltonian and the inelastic effects aretreated with a multi-channel method, including Pauli exclusion principle.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Inelastic transport in molecular spin valves|N. Jean,S. Sanvito###
(263328, 263328)
 Inthe case of the H2 molecule, we find that inelastic backscattering isresponsible for the drop of the differential conductance at biases larger thanthe excitation energy of the lower of the molecular phonon modes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H2
###Inelastic transport in molecular spin valves|N. Jean,S. Sanvito###
(263339, 263340)
 Inthe case of the H2 molecule, we find that inelastic backscattering isresponsible for the drop of the differential conductance at biases larger thanthe excitation energy of the lower of the molecular phonon modes.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Inelastic transport in molecular spin valves|N. Jean,S. Sanvito###
(263406, 263406)
 In the caseof the spin-valve, we investigate the different spin-currents and themagnetoresistance as a function of the position of the Fermi level with respectto the spin-polarized band edges.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Inelastic transport in molecular spin valves|N. Jean,S. Sanvito###
(263479, 263479)
 In general inelastic scattering reduces thespin-polarization of the current and consequently the magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SWCN
###Ballistic magnetoresistance in small-size carbon nanotubes devices|S. Krompiewski,Gianaurelio Cuniberti###
(263844, 263847)
 We theoretically study the magnetoresistance of single wall carbon nanotubes(SWCNTs) in the ballistic transport regime, using a standard tight-bindingapproach.
Featurization terminated normally.
0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SWCN
###Ballistic magnetoresistance in small-size carbon nanotubes devices|S. Krompiewski,Gianaurelio Cuniberti###
(263995, 263998)
These factors (along with a broadening of energy levels due to a strongnanotube/electrode coupling) lead, in ultra small SWCNTs, to seriousmodifications in profile of the Aharonov-Bohm oscillations.
Featurization terminated normally.
0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SWCN
###Ballistic magnetoresistance in small-size carbon nanotubes devices|S. Krompiewski,Gianaurelio Cuniberti###
(264111, 264114)
 Other noteworthyfindings are that in the parallel configuration (axial magnetic field) theballistic magnetoconductance is negative (positive) for armchair(semiconducting zigzag) nanotubes, whereas in the perpendicular configurationthe magnetoresistance is nearly zero both for armchair and zigzag SWCNTs.
Featurization terminated normally.
0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pr1-xLa
###Magnetoresistance of Pr$_{1-x}$La$_x$Os$_4$Sb$_{12}$: Disentangling local crystalline-electric-field physics and lattice effects|C. R. Rotundu,K. Ingersent,B. Andraka###
(264695, 264699)
Magnetoresistance of Pr1-xLax<missing VAR>Os4Sb12 Disentangling local crystalline-electric-field physics and lattice effects.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[59.0, 20, 'mK', 1],[70.0, 18, 'T', 1],[156.0, 9, 'T', 3],[282.0, 0.05, 'cannot', 5]

Os4Sb12
###Magnetoresistance of Pr$_{1-x}$La$_x$Os$_4$Sb$_{12}$: Disentangling local crystalline-electric-field physics and lattice effects|C. R. Rotundu,K. Ingersent,B. Andraka###
(264701, 264704)
Magnetoresistance of Pr1-xLax<missing VAR>Os4Sb12 Disentangling local crystalline-electric-field physics and lattice effects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 20, 'mK', 1],[65.0, 18, 'T', 1],[151.0, 9, 'T', 3],[277.0, 0.05, 'cannot', 5]

Pr1-xLa
###Magnetoresistance of Pr$_{1-x}$La$_x$Os$_4$Sb$_{12}$: Disentangling local crystalline-electric-field physics and lattice effects|C. R. Rotundu,K. Ingersent,B. Andraka###
(264735, 264739)
 Resistivity measurements were performed on Pr1-xLax<missing VAR>Os4Sb12single crystals at temperatures down to 20 mK and in fields up to 18 T.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[19.0, 20, 'mK', 0],[30.0, 18, 'T', 0],[116.0, 9, 'T', 2],[242.0, 0.05, 'cannot', 4]

Os4Sb12
###Magnetoresistance of Pr$_{1-x}$La$_x$Os$_4$Sb$_{12}$: Disentangling local crystalline-electric-field physics and lattice effects|C. R. Rotundu,K. Ingersent,B. Andraka###
(264741, 264744)
 Resistivity measurements were performed on Pr1-xLax<missing VAR>Os4Sb12single crystals at temperatures down to 20 mK and in fields up to 18 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 20, 'mK', 0],[25.0, 18, 'T', 0],[111.0, 9, 'T', 2],[237.0, 0.05, 'cannot', 4]

Pr
###Magnetoresistance of Pr$_{1-x}$La$_x$Os$_4$Sb$_{12}$: Disentangling local crystalline-electric-field physics and lattice effects|C. R. Rotundu,K. Ingersent,B. Andraka###
(264781, 264781)
 Theresults for dilute-Pr samples (x<missing VAR>0.3 and 0.67) are consistent with modelcalculations performed assuming a singlet crystalline-electric-field (CE<missing VAR>F)ground state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 20, 'mK', 1],[12.0, 18, 'T', 1],[74.0, 9, 'T', 1],[200.0, 0.05, 'cannot', 3]

C
###Magnetoresistance of Pr$_{1-x}$La$_x$Os$_4$Sb$_{12}$: Disentangling local crystalline-electric-field physics and lattice effects|C. R. Rotundu,K. Ingersent,B. Andraka###
(264820, 264820)
 Theresults for dilute-Pr samples (x<missing VAR>0.3 and 0.67) are consistent with modelcalculations performed assuming a singlet crystalline-electric-field (CE<missing VAR>F)ground state.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 20, 'mK', 1],[51.0, 18, 'T', 1],[35.0, 9, 'T', 1],[161.0, 0.05, 'cannot', 3]

F
###Magnetoresistance of Pr$_{1-x}$La$_x$Os$_4$Sb$_{12}$: Disentangling local crystalline-electric-field physics and lattice effects|C. R. Rotundu,K. Ingersent,B. Andraka###
(264822, 264822)
 Theresults for dilute-Pr samples (x<missing VAR>0.3 and 0.67) are consistent with modelcalculations performed assuming a singlet crystalline-electric-field (CE<missing VAR>F)ground state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 20, 'mK', 1],[53.0, 18, 'T', 1],[33.0, 9, 'T', 1],[159.0, 0.05, 'cannot', 3]

C
###Magnetoresistance of Pr$_{1-x}$La$_x$Os$_4$Sb$_{12}$: Disentangling local crystalline-electric-field physics and lattice effects|C. R. Rotundu,K. Ingersent,B. Andraka###
(264872, 264872)
 The residual resistivity of these crystals features a smearedstep centered around 9 T, the predicted crossing field for the lowest CE<missing VAR>Flevels.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 20, 'mK', 2],[103.0, 18, 'T', 2],[17.0, 9, 'T', 0],[109.0, 0.05, 'cannot', 2]

F
###Magnetoresistance of Pr$_{1-x}$La$_x$Os$_4$Sb$_{12}$: Disentangling local crystalline-electric-field physics and lattice effects|C. R. Rotundu,K. Ingersent,B. Andraka###
(264874, 264874)
 The residual resistivity of these crystals features a smearedstep centered around 9 T, the predicted crossing field for the lowest CE<missing VAR>Flevels.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 20, 'mK', 2],[105.0, 18, 'T', 2],[19.0, 9, 'T', 0],[107.0, 0.05, 'cannot', 2]

C
###Magnetoresistance of Pr$_{1-x}$La$_x$Os$_4$Sb$_{12}$: Disentangling local crystalline-electric-field physics and lattice effects|C. R. Rotundu,K. Ingersent,B. Andraka###
(264882, 264882)
 The CE<missing VAR>F contribution to the magnetoresistance has aweaker-than-calculated dependence on the field direction, suggesting thatinteractions omitted from the CE<missing VAR>F model lead to avoided crossing in theeffective levels of the Pr3 ion.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 20, 'mK', 3],[113.0, 18, 'T', 3],[27.0, 9, 'T', 1],[99.0, 0.05, 'cannot', 1]

F
###Magnetoresistance of Pr$_{1-x}$La$_x$Os$_4$Sb$_{12}$: Disentangling local crystalline-electric-field physics and lattice effects|C. R. Rotundu,K. Ingersent,B. Andraka###
(264884, 264884)
 The CE<missing VAR>F contribution to the magnetoresistance has aweaker-than-calculated dependence on the field direction, suggesting thatinteractions omitted from the CE<missing VAR>F model lead to avoided crossing in theeffective levels of the Pr3 ion.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 20, 'mK', 3],[115.0, 18, 'T', 3],[29.0, 9, 'T', 1],[97.0, 0.05, 'cannot', 1]

C
###Magnetoresistance of Pr$_{1-x}$La$_x$Os$_4$Sb$_{12}$: Disentangling local crystalline-electric-field physics and lattice effects|C. R. Rotundu,K. Ingersent,B. Andraka###
(264929, 264929)
 The CE<missing VAR>F contribution to the magnetoresistance has aweaker-than-calculated dependence on the field direction, suggesting thatinteractions omitted from the CE<missing VAR>F model lead to avoided crossing in theeffective levels of the Pr3 ion.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[171.0, 20, 'mK', 3],[160.0, 18, 'T', 3],[74.0, 9, 'T', 1],[52.0, 0.05, 'cannot', 1]

F
###Magnetoresistance of Pr$_{1-x}$La$_x$Os$_4$Sb$_{12}$: Disentangling local crystalline-electric-field physics and lattice effects|C. R. Rotundu,K. Ingersent,B. Andraka###
(264931, 264931)
 The CE<missing VAR>F contribution to the magnetoresistance has aweaker-than-calculated dependence on the field direction, suggesting thatinteractions omitted from the CE<missing VAR>F model lead to avoided crossing in theeffective levels of the Pr3 ion.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 20, 'mK', 3],[162.0, 18, 'T', 3],[76.0, 9, 'T', 1],[50.0, 0.05, 'cannot', 1]

Pr3
###Magnetoresistance of Pr$_{1-x}$La$_x$Os$_4$Sb$_{12}$: Disentangling local crystalline-electric-field physics and lattice effects|C. R. Rotundu,K. Ingersent,B. Andraka###
(264956, 264957)
 The CE<missing VAR>F contribution to the magnetoresistance has aweaker-than-calculated dependence on the field direction, suggesting thatinteractions omitted from the CE<missing VAR>F model lead to avoided crossing in theeffective levels of the Pr3 ion.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[198.0, 20, 'mK', 3],[187.0, 18, 'T', 3],[101.0, 9, 'T', 1],[24.0, 0.05, 'cannot', 1]

C
###Magnetoresistance of Pr$_{1-x}$La$_x$Os$_4$Sb$_{12}$: Disentangling local crystalline-electric-field physics and lattice effects|C. R. Rotundu,K. Ingersent,B. Andraka###
(264991, 264991)
 The dome-shaped magnetoresistanceobserved for x<missing VAR>  0 and 0.05 cannot be reproduced by the CE<missing VAR>F model, and likelyresults from fluctuations in the field-induced antiferroquadrupolar phase.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[233.0, 20, 'mK', 4],[222.0, 18, 'T', 4],[136.0, 9, 'T', 2],[10.0, 0.05, 'cannot', 0]

F
###Magnetoresistance of Pr$_{1-x}$La$_x$Os$_4$Sb$_{12}$: Disentangling local crystalline-electric-field physics and lattice effects|C. R. Rotundu,K. Ingersent,B. Andraka###
(264993, 264993)
 The dome-shaped magnetoresistanceobserved for x<missing VAR>  0 and 0.05 cannot be reproduced by the CE<missing VAR>F model, and likelyresults from fluctuations in the field-induced antiferroquadrupolar phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[235.0, 20, 'mK', 4],[224.0, 18, 'T', 4],[138.0, 9, 'T', 2],[12.0, 0.05, 'cannot', 0]

Fe1
###Sharp switching of the magnetization in Fe1/4TaS2|E. Morosan,H. W. Zandbergen,Lu Li,Minhyea Lee,J. G. Checkelsky,M. Heinrich,T. Siegrist,N. P. Ong,R. J. Cava###
(265399, 265400)
Sharp switching of the magnetization in Fe1/4TaS2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 160, 'K', 3],[260.0, 5, 'T', 6],[333.0, 3.7, 'T', 7],[339.0, 2, 'K', 7]

TaS2
###Sharp switching of the magnetization in Fe1/4TaS2|E. Morosan,H. W. Zandbergen,Lu Li,Minhyea Lee,J. G. Checkelsky,M. Heinrich,T. Siegrist,N. P. Ong,R. J. Cava###
(265403, 265405)
Sharp switching of the magnetization in Fe1/4TaS2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 160, 'K', 3],[255.0, 5, 'T', 6],[328.0, 3.7, 'T', 7],[334.0, 2, 'K', 7]

Fe1
###Sharp switching of the magnetization in Fe1/4TaS2|E. Morosan,H. W. Zandbergen,Lu Li,Minhyea Lee,J. G. Checkelsky,M. Heinrich,T. Siegrist,N. P. Ong,R. J. Cava###
(265422, 265423)
 Anisotropic magneto-transport measurements are reported on Fe1/4TaS2 singlecrystals grown by vapor transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 160, 'K', 2],[237.0, 5, 'T', 5],[310.0, 3.7, 'T', 6],[316.0, 2, 'K', 6]

TaS2
###Sharp switching of the magnetization in Fe1/4TaS2|E. Morosan,H. W. Zandbergen,Lu Li,Minhyea Lee,J. G. Checkelsky,M. Heinrich,T. Siegrist,N. P. Ong,R. J. Cava###
(265426, 265428)
 Anisotropic magneto-transport measurements are reported on Fe1/4TaS2 singlecrystals grown by vapor transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 160, 'K', 2],[232.0, 5, 'T', 5],[305.0, 3.7, 'T', 6],[311.0, 2, 'K', 6]

Fe1
###Sharp switching of the magnetization in Fe1/4TaS2|E. Morosan,H. W. Zandbergen,Lu Li,Minhyea Lee,J. G. Checkelsky,M. Heinrich,T. Siegrist,N. P. Ong,R. J. Cava###
(265486, 265487)
 Fe1/4TaS2 orders ferromagnetically below T<missing VAR>C  160 Kand displays very sharp hysteresis loops in the ordered state for Hc<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 160, 'K', 0],[173.0, 5, 'T', 3],[246.0, 3.7, 'T', 4],[252.0, 2, 'K', 4]

TaS2
###Sharp switching of the magnetization in Fe1/4TaS2|E. Morosan,H. W. Zandbergen,Lu Li,Minhyea Lee,J. G. Checkelsky,M. Heinrich,T. Siegrist,N. P. Ong,R. J. Cava###
(265490, 265492)
 Fe1/4TaS2 orders ferromagnetically below T<missing VAR>C  160 Kand displays very sharp hysteresis loops in the ordered state for Hc<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 160, 'K', 0],[168.0, 5, 'T', 3],[241.0, 3.7, 'T', 4],[247.0, 2, 'K', 4]

C
###Sharp switching of the magnetization in Fe1/4TaS2|E. Morosan,H. W. Zandbergen,Lu Li,Minhyea Lee,J. G. Checkelsky,M. Heinrich,T. Siegrist,N. P. Ong,R. J. Cava###
(265501, 265501)
 Fe1/4TaS2 orders ferromagnetically below T<missing VAR>C  160 Kand displays very sharp hysteresis loops in the ordered state for Hc<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 160, 'K', 0],[159.0, 5, 'T', 3],[232.0, 3.7, 'T', 4],[238.0, 2, 'K', 4]

H
###Sharp switching of the magnetization in Fe1/4TaS2|E. Morosan,H. W. Zandbergen,Lu Li,Minhyea Lee,J. G. Checkelsky,M. Heinrich,T. Siegrist,N. P. Ong,R. J. Cava###
(265528, 265528)
 Fe1/4TaS2 orders ferromagnetically below T<missing VAR>C  160 Kand displays very sharp hysteresis loops in the ordered state for Hc<missing VAR>.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 160, 'K', 0],[132.0, 5, 'T', 3],[205.0, 3.7, 'T', 4],[211.0, 2, 'K', 4]

(H)
###Sharp switching of the magnetization in Fe1/4TaS2|E. Morosan,H. W. Zandbergen,Lu Li,Minhyea Lee,J. G. Checkelsky,M. Heinrich,T. Siegrist,N. P. Ong,R. J. Cava###
(265564, 265566)
 Thecorresponding magnetoresistance is negative, and it qualitatively reproducesthe features observed in the M<missing VAR>(H) data, by showing a sharp drop around thecritical field Hs for the moment reversal.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 160, 'K', 1],[94.0, 5, 'T', 2],[167.0, 3.7, 'T', 3],[173.0, 2, 'K', 3]

Hs
###Sharp switching of the magnetization in Fe1/4TaS2|E. Morosan,H. W. Zandbergen,Lu Li,Minhyea Lee,J. G. Checkelsky,M. Heinrich,T. Siegrist,N. P. Ong,R. J. Cava###
(265590, 265590)
 Thecorresponding magnetoresistance is negative, and it qualitatively reproducesthe features observed in the M<missing VAR>(H) data, by showing a sharp drop around thecritical field Hs for the moment reversal.
EXCEPTION 3: IndexError for Hs
H
[87.0, 160, 'K', 1],[70.0, 5, 'T', 2],[143.0, 3.7, 'T', 3],[149.0, 2, 'K', 3]

Si
###Intervalley scattering and weak localization in Si-based two-dimensional structures|A. Yu. Kuntsevich,N. N. Klimov,S. A. Tarasenko,N. S. Averkiev,V. M. Pudalov,H. Kojima,M. E. Gershenson###
(265788, 265788)
Intervalley scattering and weak localization in Si-based two-dimensional structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Intervalley scattering and weak localization in Si-based two-dimensional structures|A. Yu. Kuntsevich,N. N. Klimov,S. A. Tarasenko,N. S. Averkiev,V. M. Pudalov,H. Kojima,M. E. Gershenson###
(265821, 265821)
 We have measured the weak localization magnetoresistance in (001)-oriented SiM<missing VAR>OS structures with a wide range of mobilities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OS
###Intervalley scattering and weak localization in Si-based two-dimensional structures|A. Yu. Kuntsevich,N. N. Klimov,S. A. Tarasenko,N. S. Averkiev,V. M. Pudalov,H. Kojima,M. E. Gershenson###
(265825, 265826)
 We have measured the weak localization magnetoresistance in (001)-oriented SiM<missing VAR>OS structures with a wide range of mobilities.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Intervalley scattering and weak localization in Si-based two-dimensional structures|A. Yu. Kuntsevich,N. N. Klimov,S. A. Tarasenko,N. S. Averkiev,V. M. Pudalov,H. Kojima,M. E. Gershenson###
(266125, 266125)
 These observations suggest that the roughness of the Si-SiO2interface plays the major role in intervalley scattering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SiO2
###Intervalley scattering and weak localization in Si-based two-dimensional structures|A. Yu. Kuntsevich,N. N. Klimov,S. A. Tarasenko,N. S. Averkiev,V. M. Pudalov,H. Kojima,M. E. Gershenson###
(266127, 266129)
 These observations suggest that the roughness of the Si-SiO2interface plays the major role in intervalley scattering.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(B)
###Crossover from weak localization to Shubnikov-de Haas oscillations in a high mobility 2D electron gas|T. A. Sedrakyan,M. E. Raikh###
(266201, 266203)
 We study the magnetoresistance, deltarhoxx(B)/rho0, of a high-mobility2D<missing VAR> electron gas in the domain of magnetic fields, B, intermediate between theweak localization and the Shubnikov-de Haas oscillations, wheredeltarhoxx(B)/rho0 is governed by the interaction effects.
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 2, 'D', 1],[3.0, 0, ',', 0]

B
###Crossover from weak localization to Shubnikov-de Haas oscillations in a high mobility 2D electron gas|T. A. Sedrakyan,M. E. Raikh###
(266238, 266238)
 We study the magnetoresistance, deltarhoxx(B)/rho0, of a high-mobility2D<missing VAR> electron gas in the domain of magnetic fields, B, intermediate between theweak localization and the Shubnikov-de Haas oscillations, wheredeltarhoxx(B)/rho0 is governed by the interaction effects.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 2, 'D', 1],[32.0, 0, ',', 0]

(B)
###Crossover from weak localization to Shubnikov-de Haas oscillations in a high mobility 2D electron gas|T. A. Sedrakyan,M. E. Raikh###
(266271, 266273)
 We study the magnetoresistance, deltarhoxx(B)/rho0, of a high-mobility2D<missing VAR> electron gas in the domain of magnetic fields, B, intermediate between theweak localization and the Shubnikov-de Haas oscillations, wheredeltarhoxx(B)/rho0 is governed by the interaction effects.
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 2, 'D', 1],[65.0, 0, ',', 0]

B
###Crossover from weak localization to Shubnikov-de Haas oscillations in a high mobility 2D electron gas|T. A. Sedrakyan,M. E. Raikh###
(266338, 266338)
 Assumingshort-range impurity scattering, we demonstrate that in the em second orderin the interaction parameter, lambda, a em linear B-dependence,deltarhoxx(B)/rho0sim lambda2omegac/EF with emtemperature-independent slope emerges in this domain of B (here omegac<missing VAR> andE<missing VAR>F are the cyclotron frequency and the Fermi energy, respectively).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 2, 'D', 2],[132.0, 0, ',', 1]

(B)
###Crossover from weak localization to Shubnikov-de Haas oscillations in a high mobility 2D electron gas|T. A. Sedrakyan,M. E. Raikh###
(266347, 266349)
 Assumingshort-range impurity scattering, we demonstrate that in the em second orderin the interaction parameter, lambda, a em linear B-dependence,deltarhoxx(B)/rho0sim lambda2omegac/EF with emtemperature-independent slope emerges in this domain of B (here omegac<missing VAR> andE<missing VAR>F are the cyclotron frequency and the Fermi energy, respectively).
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 2, 'D', 2],[141.0, 0, ',', 1]

F
###Crossover from weak localization to Shubnikov-de Haas oscillations in a high mobility 2D electron gas|T. A. Sedrakyan,M. E. Raikh###
(266361, 266361)
 Assumingshort-range impurity scattering, we demonstrate that in the em second orderin the interaction parameter, lambda, a em linear B-dependence,deltarhoxx(B)/rho0sim lambda2omegac/EF with emtemperature-independent slope emerges in this domain of B (here omegac<missing VAR> andE<missing VAR>F are the cyclotron frequency and the Fermi energy, respectively).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 2, 'D', 2],[155.0, 0, ',', 1]

B
###Crossover from weak localization to Shubnikov-de Haas oscillations in a high mobility 2D electron gas|T. A. Sedrakyan,M. E. Raikh###
(266384, 266384)
 Assumingshort-range impurity scattering, we demonstrate that in the em second orderin the interaction parameter, lambda, a em linear B-dependence,deltarhoxx(B)/rho0sim lambda2omegac/EF with emtemperature-independent slope emerges in this domain of B (here omegac<missing VAR> andE<missing VAR>F are the cyclotron frequency and the Fermi energy, respectively).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[202.0, 2, 'D', 2],[178.0, 0, ',', 1]

F
###Crossover from weak localization to Shubnikov-de Haas oscillations in a high mobility 2D electron gas|T. A. Sedrakyan,M. E. Raikh###
(266396, 266396)
 Assumingshort-range impurity scattering, we demonstrate that in the em second orderin the interaction parameter, lambda, a em linear B-dependence,deltarhoxx(B)/rho0sim lambda2omegac/EF with emtemperature-independent slope emerges in this domain of B (here omegac<missing VAR> andE<missing VAR>F are the cyclotron frequency and the Fermi energy, respectively).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[214.0, 2, 'D', 2],[190.0, 0, ',', 1]

B
###Crossover from weak localization to Shubnikov-de Haas oscillations in a high mobility 2D electron gas|T. A. Sedrakyan,M. E. Raikh###
(266476, 266476)
 Unlikeprevious mechanisms, the linear magnetoresistance is em unrelated to theelectron executing the full Larmour circle, but rather originates from theimpurity scattering via the B-dependence of the em phase of theimpurity-induced Friedel oscillations.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[294.0, 2, 'D', 3],[270.0, 0, ',', 2]

Mn
###Quenched magnetic moment in Mn-doped amorphous Si (\textit{a}-Mn$_{x}$Si$_{1-x}$) across the metal-insulator transition|Li Zeng,E. Helgren,R. Islam,B. J. Wilkens,R. J. Culbertson,David J. Smith,F. Hellman###
(266805, 266805)
Quenched magnetic moment in Mn-doped amorphous Si (textita-Mnx<missing VAR>Si1-x) across the metal-insulator transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Quenched magnetic moment in Mn-doped amorphous Si (\textit{a}-Mn$_{x}$Si$_{1-x}$) across the metal-insulator transition|Li Zeng,E. Helgren,R. Islam,B. J. Wilkens,R. J. Culbertson,David J. Smith,F. Hellman###
(266811, 266811)
Quenched magnetic moment in Mn-doped amorphous Si (textita-Mnx<missing VAR>Si1-x) across the metal-insulator transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Quenched magnetic moment in Mn-doped amorphous Si (\textit{a}-Mn$_{x}$Si$_{1-x}$) across the metal-insulator transition|Li Zeng,E. Helgren,R. Islam,B. J. Wilkens,R. J. Culbertson,David J. Smith,F. Hellman###
(266817, 266817)
Quenched magnetic moment in Mn-doped amorphous Si (textita-Mnx<missing VAR>Si1-x) across the metal-insulator transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Quenched magnetic moment in Mn-doped amorphous Si (\textit{a}-Mn$_{x}$Si$_{1-x}$) across the metal-insulator transition|Li Zeng,E. Helgren,R. Islam,B. J. Wilkens,R. J. Culbertson,David J. Smith,F. Hellman###
(266850, 266850)
 The magnetic and electrical transport properties of Mn-doped amorphoussilicon (textita-Mnx<missing VAR>Si1-x) thin films have been measured.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Quenched magnetic moment in Mn-doped amorphous Si (\textit{a}-Mn$_{x}$Si$_{1-x}$) across the metal-insulator transition|Li Zeng,E. Helgren,R. Islam,B. J. Wilkens,R. J. Culbertson,David J. Smith,F. Hellman###
(266863, 266863)
 The magnetic and electrical transport properties of Mn-doped amorphoussilicon (textita-Mnx<missing VAR>Si1-x) thin films have been measured.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Quenched magnetic moment in Mn-doped amorphous Si (\textit{a}-Mn$_{x}$Si$_{1-x}$) across the metal-insulator transition|Li Zeng,E. Helgren,R. Islam,B. J. Wilkens,R. J. Culbertson,David J. Smith,F. Hellman###
(266935, 266935)
 While all Mn atoms contributeto the electrical transport, only a small fraction (interstitial Mn2states with J<missing VAR>S5/2) contribute to the magnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn2
###Quenched magnetic moment in Mn-doped amorphous Si (\textit{a}-Mn$_{x}$Si$_{1-x}$) across the metal-insulator transition|Li Zeng,E. Helgren,R. Islam,B. J. Wilkens,R. J. Culbertson,David J. Smith,F. Hellman###
(266962, 266963)
 While all Mn atoms contributeto the electrical transport, only a small fraction (interstitial Mn2states with J<missing VAR>S5/2) contribute to the magnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S5
###Quenched magnetic moment in Mn-doped amorphous Si (\textit{a}-Mn$_{x}$Si$_{1-x}$) across the metal-insulator transition|Li Zeng,E. Helgren,R. Islam,B. J. Wilkens,R. J. Culbertson,David J. Smith,F. Hellman###
(266971, 266972)
 While all Mn atoms contributeto the electrical transport, only a small fraction (interstitial Mn2states with J<missing VAR>S5/2) contribute to the magnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Quenched magnetic moment in Mn-doped amorphous Si (\textit{a}-Mn$_{x}$Si$_{1-x}$) across the metal-insulator transition|Li Zeng,E. Helgren,R. Islam,B. J. Wilkens,R. J. Culbertson,David J. Smith,F. Hellman###
(266995, 266995)
 The majority of theMn atoms do not possess any magnetic moment, contrary to what is predicted bythe Ludwig-Woodbury model for Mn in crystalline silicon.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Quenched magnetic moment in Mn-doped amorphous Si (\textit{a}-Mn$_{x}$Si$_{1-x}$) across the metal-insulator transition|Li Zeng,E. Helgren,R. Islam,B. J. Wilkens,R. J. Culbertson,David J. Smith,F. Hellman###
(267035, 267035)
 The majority of theMn atoms do not possess any magnetic moment, contrary to what is predicted bythe Ludwig-Woodbury model for Mn in crystalline silicon.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Gd
###Quenched magnetic moment in Mn-doped amorphous Si (\textit{a}-Mn$_{x}$Si$_{1-x}$) across the metal-insulator transition|Li Zeng,E. Helgren,R. Islam,B. J. Wilkens,R. J. Culbertson,David J. Smith,F. Hellman###
(267050, 267050)
 Unliketextita-Gdx<missing VAR>Si1-x films which have an enormous textitnegativemagnetoresistance, textita-Mnx<missing VAR>Si1-x films have only a smalltextitpositive magnetoresistance, which can be understood by this quenchingof the Mn moment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si1-x
###Quenched magnetic moment in Mn-doped amorphous Si (\textit{a}-Mn$_{x}$Si$_{1-x}$) across the metal-insulator transition|Li Zeng,E. Helgren,R. Islam,B. J. Wilkens,R. J. Culbertson,David J. Smith,F. Hellman###
(267052, 267055)
 Unliketextita-Gdx<missing VAR>Si1-x films which have an enormous textitnegativemagnetoresistance, textita-Mnx<missing VAR>Si1-x films have only a smalltextitpositive magnetoresistance, which can be understood by this quenchingof the Mn moment.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

Mn
###Quenched magnetic moment in Mn-doped amorphous Si (\textit{a}-Mn$_{x}$Si$_{1-x}$) across the metal-insulator transition|Li Zeng,E. Helgren,R. Islam,B. J. Wilkens,R. J. Culbertson,David J. Smith,F. Hellman###
(267077, 267077)
 Unliketextita-Gdx<missing VAR>Si1-x films which have an enormous textitnegativemagnetoresistance, textita-Mnx<missing VAR>Si1-x films have only a smalltextitpositive magnetoresistance, which can be understood by this quenchingof the Mn moment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si1-x
###Quenched magnetic moment in Mn-doped amorphous Si (\textit{a}-Mn$_{x}$Si$_{1-x}$) across the metal-insulator transition|Li Zeng,E. Helgren,R. Islam,B. J. Wilkens,R. J. Culbertson,David J. Smith,F. Hellman###
(267079, 267082)
 Unliketextita-Gdx<missing VAR>Si1-x films which have an enormous textitnegativemagnetoresistance, textita-Mnx<missing VAR>Si1-x films have only a smalltextitpositive magnetoresistance, which can be understood by this quenchingof the Mn moment.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

Mn
###Quenched magnetic moment in Mn-doped amorphous Si (\textit{a}-Mn$_{x}$Si$_{1-x}$) across the metal-insulator transition|Li Zeng,E. Helgren,R. Islam,B. J. Wilkens,R. J. Culbertson,David J. Smith,F. Hellman###
(267120, 267120)
 Unliketextita-Gdx<missing VAR>Si1-x films which have an enormous textitnegativemagnetoresistance, textita-Mnx<missing VAR>Si1-x films have only a smalltextitpositive magnetoresistance, which can be understood by this quenchingof the Mn moment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuIn2P2
###Magneto-optical behaviour of EuIn_2P_2|F. Pfuner,L. Degiorgi. H. R. Ott,A. D. Bianchi,Z. Fisk###
(267521, 267525)
Magneto-optical behaviour of EuIn2P2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 1, 'eV', 3]

EuIn2P2
###Magneto-optical behaviour of EuIn_2P_2|F. Pfuner,L. Degiorgi. H. R. Ott,A. D. Bianchi,Z. Fisk###
(267555, 267559)
 We report results of a magneto-optical investigation of the Zintl-phasecompound EuIn2P2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 1, 'eV', 2]

C24
###Magneto-optical behaviour of EuIn_2P_2|F. Pfuner,L. Degiorgi. H. R. Ott,A. D. Bianchi,Z. Fisk###
(267573, 267574)
 The compound orders magnetically at T<missing VAR>C24 K andexhibits concomitant large magnetoresistance effects.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 1, 'eV', 1]

K
###Magneto-optical behaviour of EuIn_2P_2|F. Pfuner,L. Degiorgi. H. R. Ott,A. D. Bianchi,Z. Fisk###
(267576, 267576)
 The compound orders magnetically at T<missing VAR>C24 K andexhibits concomitant large magnetoresistance effects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 1, 'eV', 1]

K
###Magneto-optical behaviour of EuIn_2P_2|F. Pfuner,L. Degiorgi. H. R. Ott,A. D. Bianchi,Z. Fisk###
(267598, 267598)
 For T<missing VAR>le50 K andincreasing magnetic fields we observe a transfer of spectral weight insigma1(omega) from energies above 1 eV into the low-energy metalliccomponent as well as into a mid-infrared signal centered at about 600cm-1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 1, 'eV', 0]

As
###MagnetoResistance of graphene-based spin valves|L. Brey,H. A. Fertig###
(268146, 268146)
 As a preliminary step wefirst study the conductivity of a graphene strip connected to metallic contactsfor a variety of lead parameters, and demonstrate that the resultingconductivity is rather insensitive to them.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NSN
###Spintronics with NSN Junction of one-dimensional quantum wires : A study of Pure Spin Current and Magnetoresistance|Sourin Das,Sumathi Rao,Arijit Saha###
(268436, 268438)
Spintronics with NSN Junction of one-dimensional quantum wires  A study of Pure Spin Current and Magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Interplay between carrier localization and magnetism in diluted magnetic and ferromagnetic semiconductors|Tomasz Dietl###
(268824, 268824)
 At the same time carrier-mediatedinteractions between the localized spins are modified or even halted bycarriers localization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Interplay between carrier localization and magnetism in diluted magnetic and ferromagnetic semiconductors|Tomasz Dietl###
(268881, 268882)
 The interplay of these effects is discussed for II-VIand III-V diluted magnetic semiconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

VI
###Interplay between carrier localization and magnetism in diluted magnetic and ferromagnetic semiconductors|Tomasz Dietl###
(268884, 268885)
 The interplay of these effects is discussed for II-VIand III-V diluted magnetic semiconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

III
###Interplay between carrier localization and magnetism in diluted magnetic and ferromagnetic semiconductors|Tomasz Dietl###
(268890, 268892)
 The interplay of these effects is discussed for II-VIand III-V diluted magnetic semiconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Interplay between carrier localization and magnetism in diluted magnetic and ferromagnetic semiconductors|Tomasz Dietl###
(268894, 268894)
 The interplay of these effects is discussed for II-VIand III-V diluted magnetic semiconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###Interplay between carrier localization and magnetism in diluted magnetic and ferromagnetic semiconductors|Tomasz Dietl###
(268952, 268952)
 This insight is exploited tointerpret the complex dependence of resistance on temperature, magnetic field,and concentration of valence-band holes in (Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Interplay between carrier localization and magnetism in diluted magnetic and ferromagnetic semiconductors|Tomasz Dietl###
(268954, 268954)
 This insight is exploited tointerpret the complex dependence of resistance on temperature, magnetic field,and concentration of valence-band holes in (Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Interplay between carrier localization and magnetism in diluted magnetic and ferromagnetic semiconductors|Tomasz Dietl###
(268956, 268956)
 This insight is exploited tointerpret the complex dependence of resistance on temperature, magnetic field,and concentration of valence-band holes in (Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Interplay between carrier localization and magnetism in diluted magnetic and ferromagnetic semiconductors|Tomasz Dietl###
(268959, 268959)
 In particular, high fieldnegative magnetoresistance results from the orbital weak localization effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Metastability and magnetic memory effect in Ni-Mn-Sn alloy|S. Chatterjee,S. Giri,S. Majumdar,S. K. De###
(269169, 269169)
Metastability and magnetic memory effect in Ni-Mn-Sn alloy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Metastability and magnetic memory effect in Ni-Mn-Sn alloy|S. Chatterjee,S. Giri,S. Majumdar,S. K. De###
(269171, 269171)
Metastability and magnetic memory effect in Ni-Mn-Sn alloy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sn
###Metastability and magnetic memory effect in Ni-Mn-Sn alloy|S. Chatterjee,S. Giri,S. Majumdar,S. K. De###
(269173, 269173)
Metastability and magnetic memory effect in Ni-Mn-Sn alloy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni2Mn1.4Sn0.6
###Metastability and magnetic memory effect in Ni-Mn-Sn alloy|S. Chatterjee,S. Giri,S. Majumdar,S. K. De###
(269201, 269206)
 Magneto-structural instability in the ferromagnetic shape memory alloy ofcomposition Ni2Mn1.4Sn0.6 is investigated by transport andmagnetic measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.35,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Metastability and magnetic memory effect in Ni-Mn-Sn alloy|S. Chatterjee,S. Giri,S. Majumdar,S. K. De###
(269250, 269250)
 Large negative magnetoresistance is observed around themartensitic transition temperature (90-210 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.7
###Two-Fluid Behaviour at the Origin of the Resistivity Peak in Doped Manganites|D. I. Golosov,N. Ossi,A. Frydman,I. Felner,I. Nowik,M. I. Tsindlekht,Y. M. Mukovskii###
(269516, 269517)
 We report a series of magnetic and transport measurements on high-qualitysingle crystal samples of colossal magnetoresistive manganites, La0.7Ca0.3 Mn O3 and Pr0.7 Sr0.3 Mn O3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 1, '<', 1],[103.0, 2, ',', 1]

Ca0.3
###Two-Fluid Behaviour at the Origin of the Resistivity Peak in Doped Manganites|D. I. Golosov,N. Ossi,A. Frydman,I. Felner,I. Nowik,M. I. Tsindlekht,Y. M. Mukovskii###
(269520, 269521)
 We report a series of magnetic and transport measurements on high-qualitysingle crystal samples of colossal magnetoresistive manganites, La0.7Ca0.3 Mn O3 and Pr0.7 Sr0.3 Mn O3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 1, '<', 1],[99.0, 2, ',', 1]

Mn
###Two-Fluid Behaviour at the Origin of the Resistivity Peak in Doped Manganites|D. I. Golosov,N. Ossi,A. Frydman,I. Felner,I. Nowik,M. I. Tsindlekht,Y. M. Mukovskii###
(269523, 269523)
 We report a series of magnetic and transport measurements on high-qualitysingle crystal samples of colossal magnetoresistive manganites, La0.7Ca0.3 Mn O3 and Pr0.7 Sr0.3 Mn O3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 1, '<', 1],[97.0, 2, ',', 1]

O3
###Two-Fluid Behaviour at the Origin of the Resistivity Peak in Doped Manganites|D. I. Golosov,N. Ossi,A. Frydman,I. Felner,I. Nowik,M. I. Tsindlekht,Y. M. Mukovskii###
(269525, 269526)
 We report a series of magnetic and transport measurements on high-qualitysingle crystal samples of colossal magnetoresistive manganites, La0.7Ca0.3 Mn O3 and Pr0.7 Sr0.3 Mn O3.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 1, '<', 1],[94.0, 2, ',', 1]

Pr0.7
###Two-Fluid Behaviour at the Origin of the Resistivity Peak in Doped Manganites|D. I. Golosov,N. Ossi,A. Frydman,I. Felner,I. Nowik,M. I. Tsindlekht,Y. M. Mukovskii###
(269530, 269531)
 We report a series of magnetic and transport measurements on high-qualitysingle crystal samples of colossal magnetoresistive manganites, La0.7Ca0.3 Mn O3 and Pr0.7 Sr0.3 Mn O3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 1, '<', 1],[89.0, 2, ',', 1]

Sr0.3
###Two-Fluid Behaviour at the Origin of the Resistivity Peak in Doped Manganites|D. I. Golosov,N. Ossi,A. Frydman,I. Felner,I. Nowik,M. I. Tsindlekht,Y. M. Mukovskii###
(269533, 269534)
 We report a series of magnetic and transport measurements on high-qualitysingle crystal samples of colossal magnetoresistive manganites, La0.7Ca0.3 Mn O3 and Pr0.7 Sr0.3 Mn O3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 1, '<', 1],[86.0, 2, ',', 1]

Mn
###Two-Fluid Behaviour at the Origin of the Resistivity Peak in Doped Manganites|D. I. Golosov,N. Ossi,A. Frydman,I. Felner,I. Nowik,M. I. Tsindlekht,Y. M. Mukovskii###
(269536, 269536)
 We report a series of magnetic and transport measurements on high-qualitysingle crystal samples of colossal magnetoresistive manganites, La0.7Ca0.3 Mn O3 and Pr0.7 Sr0.3 Mn O3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 1, '<', 1],[84.0, 2, ',', 1]

O3
###Two-Fluid Behaviour at the Origin of the Resistivity Peak in Doped Manganites|D. I. Golosov,N. Ossi,A. Frydman,I. Felner,I. Nowik,M. I. Tsindlekht,Y. M. Mukovskii###
(269538, 269539)
 We report a series of magnetic and transport measurements on high-qualitysingle crystal samples of colossal magnetoresistive manganites, La0.7Ca0.3 Mn O3 and Pr0.7 Sr0.3 Mn O3.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 1, '<', 1],[81.0, 2, ',', 1]

Fe
###Two-Fluid Behaviour at the Origin of the Resistivity Peak in Doped Manganites|D. I. Golosov,N. Ossi,A. Frydman,I. Felner,I. Nowik,M. I. Tsindlekht,Y. M. Mukovskii###
(269546, 269546)
 1 % Fe doping allows a Moessbauerspectroscopy study, which shows (i) unusual line broadening within theferromagnetic phase and (ii) a coexistence of ferro- and paramagneticcontributions in a region, T<missing VAR>1<T<T2, around the Curie point T<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 1, '<', 0],[74.0, 2, ',', 0]

C
###Two-Fluid Behaviour at the Origin of the Resistivity Peak in Doped Manganites|D. I. Golosov,N. Ossi,A. Frydman,I. Felner,I. Nowik,M. I. Tsindlekht,Y. M. Mukovskii###
(269632, 269632)
 1 % Fe doping allows a Moessbauerspectroscopy study, which shows (i) unusual line broadening within theferromagnetic phase and (ii) a coexistence of ferro- and paramagneticcontributions in a region, T<missing VAR>1<T<T2, around the Curie point T<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 1, '<', 0],[12.0, 2, ',', 0]

In
###Two-Fluid Behaviour at the Origin of the Resistivity Peak in Doped Manganites|D. I. Golosov,N. Ossi,A. Frydman,I. Felner,I. Nowik,M. I. Tsindlekht,Y. M. Mukovskii###
(269635, 269635)
 In the caseof Pr0.7 Sr0.3 Mn O3, the resistivity peak occurs at a considerablyhigher temperature, TMI>T<missing VAR>2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 1, '<', 1],[15.0, 2, ',', 1]

Pr0.7
###Two-Fluid Behaviour at the Origin of the Resistivity Peak in Doped Manganites|D. I. Golosov,N. Ossi,A. Frydman,I. Felner,I. Nowik,M. I. Tsindlekht,Y. M. Mukovskii###
(269644, 269645)
 In the caseof Pr0.7 Sr0.3 Mn O3, the resistivity peak occurs at a considerablyhigher temperature, TMI>T<missing VAR>2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 1, '<', 1],[24.0, 2, ',', 1]

Sr0.3
###Two-Fluid Behaviour at the Origin of the Resistivity Peak in Doped Manganites|D. I. Golosov,N. Ossi,A. Frydman,I. Felner,I. Nowik,M. I. Tsindlekht,Y. M. Mukovskii###
(269647, 269648)
 In the caseof Pr0.7 Sr0.3 Mn O3, the resistivity peak occurs at a considerablyhigher temperature, TMI>T<missing VAR>2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 1, '<', 1],[27.0, 2, ',', 1]

Mn
###Two-Fluid Behaviour at the Origin of the Resistivity Peak in Doped Manganites|D. I. Golosov,N. Ossi,A. Frydman,I. Felner,I. Nowik,M. I. Tsindlekht,Y. M. Mukovskii###
(269650, 269650)
 In the caseof Pr0.7 Sr0.3 Mn O3, the resistivity peak occurs at a considerablyhigher temperature, TMI>T<missing VAR>2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 1, '<', 1],[30.0, 2, ',', 1]

O3
###Two-Fluid Behaviour at the Origin of the Resistivity Peak in Doped Manganites|D. I. Golosov,N. Ossi,A. Frydman,I. Felner,I. Nowik,M. I. Tsindlekht,Y. M. Mukovskii###
(269652, 269653)
 In the caseof Pr0.7 Sr0.3 Mn O3, the resistivity peak occurs at a considerablyhigher temperature, TMI>T<missing VAR>2.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 1, '<', 1],[32.0, 2, ',', 1]

I
###Two-Fluid Behaviour at the Origin of the Resistivity Peak in Doped Manganites|D. I. Golosov,N. Ossi,A. Frydman,I. Felner,I. Nowik,M. I. Tsindlekht,Y. M. Mukovskii###
(269678, 269678)
 In the caseof Pr0.7 Sr0.3 Mn O3, the resistivity peak occurs at a considerablyhigher temperature, TMI>T<missing VAR>2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 1, '<', 1],[58.0, 2, ',', 1]

C
###Two-Fluid Behaviour at the Origin of the Resistivity Peak in Doped Manganites|D. I. Golosov,N. Ossi,A. Frydman,I. Felner,I. Nowik,M. I. Tsindlekht,Y. M. Mukovskii###
(269787, 269787)
 Our results can be understood phenomenologically within thetwo-fluid approach, which also allows for a difference between T<missing VAR>C and TMI.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[172.0, 1, '<', 3],[167.0, 2, ',', 3]

I
###Two-Fluid Behaviour at the Origin of the Resistivity Peak in Doped Manganites|D. I. Golosov,N. Ossi,A. Frydman,I. Felner,I. Nowik,M. I. Tsindlekht,Y. M. Mukovskii###
(269793, 269793)
 Our results can be understood phenomenologically within thetwo-fluid approach, which also allows for a difference between T<missing VAR>C and TMI.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 1, '<', 3],[173.0, 2, ',', 3]

C
###Two-Fluid Behaviour at the Origin of the Resistivity Peak in Doped Manganites|D. I. Golosov,N. Ossi,A. Frydman,I. Felner,I. Nowik,M. I. Tsindlekht,Y. M. Mukovskii###
(269840, 269840)
Our data indeed imply that while magnetic and transport properties of themanganites are closely interrelated, the two transitions at T<missing VAR>C and TMI canbe viewed as distinct phenomena.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[225.0, 1, '<', 4],[220.0, 2, ',', 4]

I
###Two-Fluid Behaviour at the Origin of the Resistivity Peak in Doped Manganites|D. I. Golosov,N. Ossi,A. Frydman,I. Felner,I. Nowik,M. I. Tsindlekht,Y. M. Mukovskii###
(269846, 269846)
Our data indeed imply that while magnetic and transport properties of themanganites are closely interrelated, the two transitions at T<missing VAR>C and TMI canbe viewed as distinct phenomena.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[231.0, 1, '<', 4],[226.0, 2, ',', 4]

MgB2
###Fully Band Resolved Scattering Rate in MgB2 Revealed by Nonlinear Hall Effect and Magnetoresistance Measurements|Huan Yang,Yi Liu,Chenggang Zhuang,Junren Shi,Yugui Yao,Sandro Massidda,Marco Monni,Ying Jia,Xiaoxing Xi,Qi Li,Zi-Kui Liu,Qingrong Feng,Hai-Hu Wen###
(269882, 269884)
Fully Band Resolved Scattering Rate in MgB2 Revealed by Nonlinear Hall Effect and Magnetoresistance Measurements.
Featurization terminated normally.
0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 4.0, 'to', 1]

MgB2
###Fully Band Resolved Scattering Rate in MgB2 Revealed by Nonlinear Hall Effect and Magnetoresistance Measurements|Huan Yang,Yi Liu,Chenggang Zhuang,Junren Shi,Yugui Yao,Sandro Massidda,Marco Monni,Ying Jia,Xiaoxing Xi,Qi Li,Zi-Kui Liu,Qingrong Feng,Hai-Hu Wen###
(269936, 269938)
 We have measured the normal state temperature dependence of the Hall effectand magnetoresistance in epitaxial MgB2 thin films with variable disorderscharacterized by the residual resistance ratio RRR ranging from 4.0 to 33.3.
Featurization terminated normally.
0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 4.0, 'to', 0]

In
###Transport through single-wall metallic carbon nanotubes in the cotunneling regime|I. Weymann,J. Barnas,S. Krompiewski###
(270266, 270266)
 In particular, considering the twodifferent shell filling schemes of the nanotubes, we discuss the behavior ofthe differential conductance, tunnel magnetoresistance and the shot noise.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Eu
###Anomalous magnetic and transport properties of La(0.8-x)Eu(x)Sr0.2MnO3 (0.04 l.e. x l.e. 0.36) compounds|Rakesh Kumar,C. V. Tomy,P. L. Paulose,R. Nagarajan,S. K. Malik###
(270510, 270510)
Anomalous magnetic and transport properties of La(0.8-x)Eu(x)Sr0.2MnO3 (0.04 l.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 260, 'K', 7],[110.0, 0.04, 'to', 7],[111.0, 188, 'K', 7],[118.0, 0.16, 'and', 7],[173.0, 0.16, 'but', 8]

Sr0.2MnO3
###Anomalous magnetic and transport properties of La(0.8-x)Eu(x)Sr0.2MnO3 (0.04 l.e. x l.e. 0.36) compounds|Rakesh Kumar,C. V. Tomy,P. L. Paulose,R. Nagarajan,S. K. Malik###
(270514, 270518)
Anomalous magnetic and transport properties of La(0.8-x)Eu(x)Sr0.2MnO3 (0.04 l.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0.7142857142857143,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23809523809523808,0,0,0,0,0,0,0,0,0,0,0,0,0.047619047619047616,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 260, 'K', 7],[102.0, 0.04, 'to', 7],[103.0, 188, 'K', 7],[110.0, 0.16, 'and', 7],[165.0, 0.16, 'but', 8]

La0.8-x
###Anomalous magnetic and transport properties of La(0.8-x)Eu(x)Sr0.2MnO3 (0.04 l.e. x l.e. 0.36) compounds|Rakesh Kumar,C. V. Tomy,P. L. Paulose,R. Nagarajan,S. K. Malik###
(270558, 270561)
 Anomalous magnetic and transport properties observed in theLa0.8-xEuxSr0.2MnO3 (0.04 l.e x l.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[53.0, 260, 'K', 3],[59.0, 0.04, 'to', 3],[60.0, 188, 'K', 3],[67.0, 0.16, 'and', 3],[122.0, 0.16, 'but', 4]

Sr0.2MnO3
###Anomalous magnetic and transport properties of La(0.8-x)Eu(x)Sr0.2MnO3 (0.04 l.e. x l.e. 0.36) compounds|Rakesh Kumar,C. V. Tomy,P. L. Paulose,R. Nagarajan,S. K. Malik###
(270563, 270567)
 Anomalous magnetic and transport properties observed in theLa0.8-xEuxSr0.2MnO3 (0.04 l.e x l.
Featurization terminated normally.
0,0,0,0,0,0,0,0.7142857142857143,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23809523809523808,0,0,0,0,0,0,0,0,0,0,0,0,0.047619047619047616,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 260, 'K', 3],[53.0, 0.04, 'to', 3],[54.0, 188, 'K', 3],[61.0, 0.16, 'and', 3],[116.0, 0.16, 'but', 4]

C
###Anomalous magnetic and transport properties of La(0.8-x)Eu(x)Sr0.2MnO3 (0.04 l.e. x l.e. 0.36) compounds|Rakesh Kumar,C. V. Tomy,P. L. Paulose,R. Nagarajan,S. K. Malik###
(270608, 270608)
 The Curie temperature (T<missing VAR>C) decreases from 260 K for x<missing VAR>  0.04 to 188 Kfor x<missing VAR>  0.16 and surprisingly thereafter increases for higher Eu concentrations(x<missing VAR> > 0.16) and becomes nearly constant 230 K.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 260, 'K', 0],[12.0, 0.04, 'to', 0],[13.0, 188, 'K', 0],[20.0, 0.16, 'and', 0],[75.0, 0.16, 'but', 1]

Eu
###Anomalous magnetic and transport properties of La(0.8-x)Eu(x)Sr0.2MnO3 (0.04 l.e. x l.e. 0.36) compounds|Rakesh Kumar,C. V. Tomy,P. L. Paulose,R. Nagarajan,S. K. Malik###
(270640, 270640)
 The Curie temperature (T<missing VAR>C) decreases from 260 K for x<missing VAR>  0.04 to 188 Kfor x<missing VAR>  0.16 and surprisingly thereafter increases for higher Eu concentrations(x<missing VAR> > 0.16) and becomes nearly constant 230 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 260, 'K', 0],[20.0, 0.04, 'to', 0],[19.0, 188, 'K', 0],[12.0, 0.16, 'and', 0],[43.0, 0.16, 'but', 1]

K
###Anomalous magnetic and transport properties of La(0.8-x)Eu(x)Sr0.2MnO3 (0.04 l.e. x l.e. 0.36) compounds|Rakesh Kumar,C. V. Tomy,P. L. Paulose,R. Nagarajan,S. K. Malik###
(270663, 270663)
 The Curie temperature (T<missing VAR>C) decreases from 260 K for x<missing VAR>  0.04 to 188 Kfor x<missing VAR>  0.16 and surprisingly thereafter increases for higher Eu concentrations(x<missing VAR> > 0.16) and becomes nearly constant 230 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 260, 'K', 0],[43.0, 0.04, 'to', 0],[42.0, 188, 'K', 0],[35.0, 0.16, 'and', 0],[20.0, 0.16, 'but', 1]

Eu
###Anomalous magnetic and transport properties of La(0.8-x)Eu(x)Sr0.2MnO3 (0.04 l.e. x l.e. 0.36) compounds|Rakesh Kumar,C. V. Tomy,P. L. Paulose,R. Nagarajan,S. K. Malik###
(270672, 270672)
 Resistivity increases with Euconcentration up to x<missing VAR>  0.16 but decreases for higher Eu concentration (x<missing VAR> >0.16).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 260, 'K', 1],[52.0, 0.04, 'to', 1],[51.0, 188, 'K', 1],[44.0, 0.16, 'and', 1],[11.0, 0.16, 'but', 0]

Eu
###Anomalous magnetic and transport properties of La(0.8-x)Eu(x)Sr0.2MnO3 (0.04 l.e. x l.e. 0.36) compounds|Rakesh Kumar,C. V. Tomy,P. L. Paulose,R. Nagarajan,S. K. Malik###
(270691, 270691)
 Resistivity increases with Euconcentration up to x<missing VAR>  0.16 but decreases for higher Eu concentration (x<missing VAR> >0.16).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 260, 'K', 1],[71.0, 0.04, 'to', 1],[70.0, 188, 'K', 1],[63.0, 0.16, 'and', 1],[8.0, 0.16, 'but', 0]

In
###Anomalous magnetic and transport properties of La(0.8-x)Eu(x)Sr0.2MnO3 (0.04 l.e. x l.e. 0.36) compounds|Rakesh Kumar,C. V. Tomy,P. L. Paulose,R. Nagarajan,S. K. Malik###
(270705, 270705)
 In the magnetoresistance data, in addition to a peak corresponding tothe insulator-metal transition at (T<missing VAR>I-M<missing VAR>1), a second peak is also observed at arelatively lower temperature, (T<missing VAR>I-M<missing VAR>2).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 260, 'K', 2],[85.0, 0.04, 'to', 2],[84.0, 188, 'K', 2],[77.0, 0.16, 'and', 2],[22.0, 0.16, 'but', 1]

I
###Anomalous magnetic and transport properties of La(0.8-x)Eu(x)Sr0.2MnO3 (0.04 l.e. x l.e. 0.36) compounds|Rakesh Kumar,C. V. Tomy,P. L. Paulose,R. Nagarajan,S. K. Malik###
(270741, 270741)
 In the magnetoresistance data, in addition to a peak corresponding tothe insulator-metal transition at (T<missing VAR>I-M<missing VAR>1), a second peak is also observed at arelatively lower temperature, (T<missing VAR>I-M<missing VAR>2).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 260, 'K', 2],[121.0, 0.04, 'to', 2],[120.0, 188, 'K', 2],[113.0, 0.16, 'and', 2],[58.0, 0.16, 'but', 1]

I
###Anomalous magnetic and transport properties of La(0.8-x)Eu(x)Sr0.2MnO3 (0.04 l.e. x l.e. 0.36) compounds|Rakesh Kumar,C. V. Tomy,P. L. Paulose,R. Nagarajan,S. K. Malik###
(270774, 270774)
 In the magnetoresistance data, in addition to a peak corresponding tothe insulator-metal transition at (T<missing VAR>I-M<missing VAR>1), a second peak is also observed at arelatively lower temperature, (T<missing VAR>I-M<missing VAR>2).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 260, 'K', 2],[154.0, 0.04, 'to', 2],[153.0, 188, 'K', 2],[146.0, 0.16, 'and', 2],[91.0, 0.16, 'but', 1]

I
###Anomalous magnetic and transport properties of La(0.8-x)Eu(x)Sr0.2MnO3 (0.04 l.e. x l.e. 0.36) compounds|Rakesh Kumar,C. V. Tomy,P. L. Paulose,R. Nagarajan,S. K. Malik###
(270784, 270784)
 Both T<missing VAR>I-M<missing VAR>1 and T<missing VAR>I-M<missing VAR>2 follow the sametrend as T<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[170.0, 260, 'K', 3],[164.0, 0.04, 'to', 3],[163.0, 188, 'K', 3],[156.0, 0.16, 'and', 3],[101.0, 0.16, 'but', 2]

I
###Anomalous magnetic and transport properties of La(0.8-x)Eu(x)Sr0.2MnO3 (0.04 l.e. x l.e. 0.36) compounds|Rakesh Kumar,C. V. Tomy,P. L. Paulose,R. Nagarajan,S. K. Malik###
(270792, 270792)
 Both T<missing VAR>I-M<missing VAR>1 and T<missing VAR>I-M<missing VAR>2 follow the sametrend as T<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 260, 'K', 3],[172.0, 0.04, 'to', 3],[171.0, 188, 'K', 3],[164.0, 0.16, 'and', 3],[109.0, 0.16, 'but', 2]

C
###Anomalous magnetic and transport properties of La(0.8-x)Eu(x)Sr0.2MnO3 (0.04 l.e. x l.e. 0.36) compounds|Rakesh Kumar,C. V. Tomy,P. L. Paulose,R. Nagarajan,S. K. Malik###
(270809, 270809)
 Both T<missing VAR>I-M<missing VAR>1 and T<missing VAR>I-M<missing VAR>2 follow the sametrend as T<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[195.0, 260, 'K', 3],[189.0, 0.04, 'to', 3],[188.0, 188, 'K', 3],[181.0, 0.16, 'and', 3],[126.0, 0.16, 'but', 2]

C
###Anomalous magnetic and transport properties of La(0.8-x)Eu(x)Sr0.2MnO3 (0.04 l.e. x l.e. 0.36) compounds|Rakesh Kumar,C. V. Tomy,P. L. Paulose,R. Nagarajan,S. K. Malik###
(270821, 270821)
 The unique variation of T<missing VAR>C and magnetoresistance is explained onthe basis of structure and disorder correlated to microscopic electronic phasesegregation.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[207.0, 260, 'K', 4],[201.0, 0.04, 'to', 4],[200.0, 188, 'K', 4],[193.0, 0.16, 'and', 4],[138.0, 0.16, 'but', 3]

Ni
###Measuring entropy generated by spin-transfer|J. -E. Wegrowe,Q. Anh Nguyen,T. L. Wade###
(271015, 271015)
 The samplesare single contacted Ni nanowires obtained by electrodeposition in a nanoporoustemplate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###I-V curves of Fe/MgO (001) single- and double-barrier tunnel junctions|J. Peralta-Ramos,A. M. Llois,I. Rungger,S. Sanvito###
(271222, 271222)
I-V curves of Fe/MgO (001) single- and double-barrier tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###I-V curves of Fe/MgO (001) single- and double-barrier tunnel junctions|J. Peralta-Ramos,A. M. Llois,I. Rungger,S. Sanvito###
(271224, 271224)
I-V curves of Fe/MgO (001) single- and double-barrier tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/MgO
###I-V curves of Fe/MgO (001) single- and double-barrier tunnel junctions|J. Peralta-Ramos,A. M. Llois,I. Rungger,S. Sanvito###
(271230, 271233)
I-V curves of Fe/MgO (001) single- and double-barrier tunnel junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

In
###I-V curves of Fe/MgO (001) single- and double-barrier tunnel junctions|J. Peralta-Ramos,A. M. Llois,I. Rungger,S. Sanvito###
(271253, 271253)
 In this work, we calculate with ab initio methods the current-voltagecharacteristics for ideal single- and double-barrier Fe/MgO (001) magnetictunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/MgO
###I-V curves of Fe/MgO (001) single- and double-barrier tunnel junctions|J. Peralta-Ramos,A. M. Llois,I. Rungger,S. Sanvito###
(271294, 271297)
 In this work, we calculate with ab initio methods the current-voltagecharacteristics for ideal single- and double-barrier Fe/MgO (001) magnetictunnel junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

S
###I-V curves of Fe/MgO (001) single- and double-barrier tunnel junctions|J. Peralta-Ramos,A. M. Llois,I. Rungger,S. Sanvito###
(271340, 271340)
 The current is calculated in the phase-coherent limit byusing the recently developed SMEAGOL code, combining the nonequilibrium Greenfunction formalism with density-functional theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###I-V curves of Fe/MgO (001) single- and double-barrier tunnel junctions|J. Peralta-Ramos,A. M. Llois,I. Rungger,S. Sanvito###
(271373, 271373)
 In general we find thatdouble-barrier junctions display a larger magnetoresistance, which decays withbias at a slower pace than their single-barrier counterparts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###I-V curves of Fe/MgO (001) single- and double-barrier tunnel junctions|J. Peralta-Ramos,A. M. Llois,I. Rungger,S. Sanvito###
(271452, 271452)
 This is explainedin terms of enhanced spin filtering from the middle Fe layer sandwiched inbetween the two MgO barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###I-V curves of Fe/MgO (001) single- and double-barrier tunnel junctions|J. Peralta-Ramos,A. M. Llois,I. Rungger,S. Sanvito###
(271467, 271468)
 This is explainedin terms of enhanced spin filtering from the middle Fe layer sandwiched inbetween the two MgO barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###I-V curves of Fe/MgO (001) single- and double-barrier tunnel junctions|J. Peralta-Ramos,A. M. Llois,I. Rungger,S. Sanvito###
(271473, 271473)
 In addition, for double-barrier tunnel junctions,we find a well defined peak in the magnetoresistance at a voltage of V0.1 V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V0.1
###I-V curves of Fe/MgO (001) single- and double-barrier tunnel junctions|J. Peralta-Ramos,A. M. Llois,I. Rungger,S. Sanvito###
(271516, 271517)
 In addition, for double-barrier tunnel junctions,we find a well defined peak in the magnetoresistance at a voltage of V0.1 V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###I-V curves of Fe/MgO (001) single- and double-barrier tunnel junctions|J. Peralta-Ramos,A. M. Llois,I. Rungger,S. Sanvito###
(271519, 271519)
 In addition, for double-barrier tunnel junctions,we find a well defined peak in the magnetoresistance at a voltage of V0.1 V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Driving Weiss oscillations to Zero Resistance States by Microwave Radiation|Jesus Inarrea,Gloria Platero###
(271599, 271599)
 In this work we present a theoretical model to study the effect of microwaveradiation on Weiss oscillations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Driving Weiss oscillations to Zero Resistance States by Microwave Radiation|Jesus Inarrea,Gloria Platero###
(271637, 271637)
 In our proposal Weiss oscillations, producedby an spatial periodic potential, are modulated by microwave radiation due toan interference effect between both, space and time-dependent, potentials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pr2Pd3Ge5
###Magnetic order in Pr2Pd3Ge5 and possible heavy fermion behavior in Pr2Rh3Ge5|V. K. Anand,Z. Hossain,C. Geibel###
(271882, 271887)
Magnetic order in Pr2Pd3Ge5 and possible heavy fermion behavior in Pr2Rh3Ge5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 7.5, 'K', 3],[149.0, 8.3, 'K', 3],[215.0, 0.5, 'K', 5],[302.0, 80, 'mJ', 7]

Pr2Rh3Ge5
###Magnetic order in Pr2Pd3Ge5 and possible heavy fermion behavior in Pr2Rh3Ge5|V. K. Anand,Z. Hossain,C. Geibel###
(271901, 271906)
Magnetic order in Pr2Pd3Ge5 and possible heavy fermion behavior in Pr2Rh3Ge5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 7.5, 'K', 3],[130.0, 8.3, 'K', 3],[196.0, 0.5, 'K', 5],[283.0, 80, 'mJ', 7]

Pr2Pd3Ge5
###Magnetic order in Pr2Pd3Ge5 and possible heavy fermion behavior in Pr2Rh3Ge5|V. K. Anand,Z. Hossain,C. Geibel###
(271930, 271935)
 We report our results on two new ternary intermetallic compoundsPr2Pd3Ge5 and Pr2Rh3Ge5 based on magneticsusceptibility, magnetization, specific heat, resistivity and magnetoresistancedata.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 7.5, 'K', 2],[101.0, 8.3, 'K', 2],[167.0, 0.5, 'K', 4],[254.0, 80, 'mJ', 6]

Pr2Rh3Ge5
###Magnetic order in Pr2Pd3Ge5 and possible heavy fermion behavior in Pr2Rh3Ge5|V. K. Anand,Z. Hossain,C. Geibel###
(271939, 271944)
 We report our results on two new ternary intermetallic compoundsPr2Pd3Ge5 and Pr2Rh3Ge5 based on magneticsusceptibility, magnetization, specific heat, resistivity and magnetoresistancedata.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 7.5, 'K', 2],[92.0, 8.3, 'K', 2],[158.0, 0.5, 'K', 4],[245.0, 80, 'mJ', 6]

U2Co3Si5
###Magnetic order in Pr2Pd3Ge5 and possible heavy fermion behavior in Pr2Rh3Ge5|V. K. Anand,Z. Hossain,C. Geibel###
(271982, 271987)
 These compounds form in U2Co3Si5-type orthorhombicstructure (space group textitIbam).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0
[41.0, 7.5, 'K', 1],[49.0, 8.3, 'K', 1],[115.0, 0.5, 'K', 3],[202.0, 80, 'mJ', 5]

Pr2Pd3Ge5
###Magnetic order in Pr2Pd3Ge5 and possible heavy fermion behavior in Pr2Rh3Ge5|V. K. Anand,Z. Hossain,C. Geibel###
(272006, 272011)
 Pr2Pd3Ge5 exhibits twomagnetic transitions at T<missing VAR>N1  7.5 K and T<missing VAR>N2  8.3 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 7.5, 'K', 0],[25.0, 8.3, 'K', 0],[91.0, 0.5, 'K', 2],[178.0, 80, 'mJ', 4]

N1
###Magnetic order in Pr2Pd3Ge5 and possible heavy fermion behavior in Pr2Rh3Ge5|V. K. Anand,Z. Hossain,C. Geibel###
(272025, 272026)
 Pr2Pd3Ge5 exhibits twomagnetic transitions at T<missing VAR>N1  7.5 K and T<missing VAR>N2  8.3 K.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 7.5, 'K', 0],[10.0, 8.3, 'K', 0],[76.0, 0.5, 'K', 2],[163.0, 80, 'mJ', 4]

N2
###Magnetic order in Pr2Pd3Ge5 and possible heavy fermion behavior in Pr2Rh3Ge5|V. K. Anand,Z. Hossain,C. Geibel###
(272033, 272034)
 Pr2Pd3Ge5 exhibits twomagnetic transitions at T<missing VAR>N1  7.5 K and T<missing VAR>N2  8.3 K.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 7.5, 'K', 0],[2.0, 8.3, 'K', 0],[68.0, 0.5, 'K', 2],[155.0, 80, 'mJ', 4]

In
###Magnetic order in Pr2Pd3Ge5 and possible heavy fermion behavior in Pr2Rh3Ge5|V. K. Anand,Z. Hossain,C. Geibel###
(272039, 272039)
 In themagnetically ordered state Pr2Pd3Ge5 exhibits a field inducedmetamagnetic transition and unusually large magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 7.5, 'K', 1],[3.0, 8.3, 'K', 1],[63.0, 0.5, 'K', 1],[150.0, 80, 'mJ', 3]

Pr2Pd3Ge5
###Magnetic order in Pr2Pd3Ge5 and possible heavy fermion behavior in Pr2Rh3Ge5|V. K. Anand,Z. Hossain,C. Geibel###
(272050, 272055)
 In themagnetically ordered state Pr2Pd3Ge5 exhibits a field inducedmetamagnetic transition and unusually large magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 7.5, 'K', 1],[14.0, 8.3, 'K', 1],[47.0, 0.5, 'K', 1],[134.0, 80, 'mJ', 3]

Pr2Rh3Ge5
###Magnetic order in Pr2Pd3Ge5 and possible heavy fermion behavior in Pr2Rh3Ge5|V. K. Anand,Z. Hossain,C. Geibel###
(272080, 272085)
Pr2Rh3Ge5 does not show any phase transition down to 0.5 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 7.5, 'K', 2],[44.0, 8.3, 'K', 2],[17.0, 0.5, 'K', 0],[104.0, 80, 'mJ', 2]

C
###Magnetic order in Pr2Pd3Ge5 and possible heavy fermion behavior in Pr2Rh3Ge5|V. K. Anand,Z. Hossain,C. Geibel###
(272112, 272112)
 Ithas a CE<missing VAR>F singlet ground state, separated from the first excited state by about10 K.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 7.5, 'K', 3],[76.0, 8.3, 'K', 3],[10.0, 0.5, 'K', 1],[77.0, 80, 'mJ', 1]

F
###Magnetic order in Pr2Pd3Ge5 and possible heavy fermion behavior in Pr2Rh3Ge5|V. K. Anand,Z. Hossain,C. Geibel###
(272114, 272114)
 Ithas a CE<missing VAR>F singlet ground state, separated from the first excited state by about10 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 7.5, 'K', 3],[78.0, 8.3, 'K', 3],[12.0, 0.5, 'K', 1],[75.0, 80, 'mJ', 1]

K
###Magnetic order in Pr2Pd3Ge5 and possible heavy fermion behavior in Pr2Rh3Ge5|V. K. Anand,Z. Hossain,C. Geibel###
(272142, 272142)
 Ithas a CE<missing VAR>F singlet ground state, separated from the first excited state by about10 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 7.5, 'K', 3],[106.0, 8.3, 'K', 3],[40.0, 0.5, 'K', 1],[47.0, 80, 'mJ', 1]

K2
###Magnetic order in Pr2Pd3Ge5 and possible heavy fermion behavior in Pr2Rh3Ge5|V. K. Anand,Z. Hossain,C. Geibel###
(272193, 272194)
 The low lying crystal field excitations lead to exciton mediatedelectronic mass enhancement as evidenced by large Sommerfeld coefficient(gamma sim 80 mJ/mol K2) in Pr2Rh3Ge5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 7.5, 'K', 4],[157.0, 8.3, 'K', 4],[91.0, 0.5, 'K', 2],[4.0, 80, 'mJ', 0]

Pr2Rh3Ge5
###Magnetic order in Pr2Pd3Ge5 and possible heavy fermion behavior in Pr2Rh3Ge5|V. K. Anand,Z. Hossain,C. Geibel###
(272199, 272204)
 The low lying crystal field excitations lead to exciton mediatedelectronic mass enhancement as evidenced by large Sommerfeld coefficient(gamma sim 80 mJ/mol K2) in Pr2Rh3Ge5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[171.0, 7.5, 'K', 4],[163.0, 8.3, 'K', 4],[97.0, 0.5, 'K', 2],[10.0, 80, 'mJ', 0]

Ba2Cu3O6
###Magnetic-field induced superconductor-antiferromagnet transition in lightly doped RBa_2Cu_3O_{6+x} (R = Lu, Y) crystals|A. N. Lavrov,L. P. Kozeeva,M. R. Trunin,V. N. Zverev###
(272234, 272239)
Magnetic-field induced superconductor-antiferromagnet transition in lightly doped R<missing VAR>Ba2Cu3O6x<missing VAR> (R<missing VAR>  Lu, Y) crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5454545454545454,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2727272727272727,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Lu
###Magnetic-field induced superconductor-antiferromagnet transition in lightly doped RBa_2Cu_3O_{6+x} (R = Lu, Y) crystals|A. N. Lavrov,L. P. Kozeeva,M. R. Trunin,V. N. Zverev###
(272246, 272246)
Magnetic-field induced superconductor-antiferromagnet transition in lightly doped R<missing VAR>Ba2Cu3O6x<missing VAR> (R<missing VAR>  Lu, Y) crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Y
###Magnetic-field induced superconductor-antiferromagnet transition in lightly doped RBa_2Cu_3O_{6+x} (R = Lu, Y) crystals|A. N. Lavrov,L. P. Kozeeva,M. R. Trunin,V. N. Zverev###
(272249, 272249)
Magnetic-field induced superconductor-antiferromagnet transition in lightly doped R<missing VAR>Ba2Cu3O6x<missing VAR> (R<missing VAR>  Lu, Y) crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Magnetic-field induced superconductor-antiferromagnet transition in lightly doped RBa_2Cu_3O_{6+x} (R = Lu, Y) crystals|A. N. Lavrov,L. P. Kozeeva,M. R. Trunin,V. N. Zverev###
(272313, 272313)
 The remarkable sensitivity of the c<missing VAR>-axis resistivity and magnetoresistance incuprates to the spin ordering is used to clarify the doping-inducedtransformation from an antiferromagnetic (AF) insulator to a superconducting(SC) metal in R<missing VAR>Ba2Cu3O6x<missing VAR> (R<missing VAR>  Lu, Y) single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(SC)
###Magnetic-field induced superconductor-antiferromagnet transition in lightly doped RBa_2Cu_3O_{6+x} (R = Lu, Y) crystals|A. N. Lavrov,L. P. Kozeeva,M. R. Trunin,V. N. Zverev###
(272325, 272328)
 The remarkable sensitivity of the c<missing VAR>-axis resistivity and magnetoresistance incuprates to the spin ordering is used to clarify the doping-inducedtransformation from an antiferromagnetic (AF) insulator to a superconducting(SC) metal in R<missing VAR>Ba2Cu3O6x<missing VAR> (R<missing VAR>  Lu, Y) single crystals.
Featurization successful!
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ba2Cu3O6
###Magnetic-field induced superconductor-antiferromagnet transition in lightly doped RBa_2Cu_3O_{6+x} (R = Lu, Y) crystals|A. N. Lavrov,L. P. Kozeeva,M. R. Trunin,V. N. Zverev###
(272335, 272340)
 The remarkable sensitivity of the c<missing VAR>-axis resistivity and magnetoresistance incuprates to the spin ordering is used to clarify the doping-inducedtransformation from an antiferromagnetic (AF) insulator to a superconducting(SC) metal in R<missing VAR>Ba2Cu3O6x<missing VAR> (R<missing VAR>  Lu, Y) single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5454545454545454,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2727272727272727,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Lu
###Magnetic-field induced superconductor-antiferromagnet transition in lightly doped RBa_2Cu_3O_{6+x} (R = Lu, Y) crystals|A. N. Lavrov,L. P. Kozeeva,M. R. Trunin,V. N. Zverev###
(272347, 272347)
 The remarkable sensitivity of the c<missing VAR>-axis resistivity and magnetoresistance incuprates to the spin ordering is used to clarify the doping-inducedtransformation from an antiferromagnetic (AF) insulator to a superconducting(SC) metal in R<missing VAR>Ba2Cu3O6x<missing VAR> (R<missing VAR>  Lu, Y) single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Y
###Magnetic-field induced superconductor-antiferromagnet transition in lightly doped RBa_2Cu_3O_{6+x} (R = Lu, Y) crystals|A. N. Lavrov,L. P. Kozeeva,M. R. Trunin,V. N. Zverev###
(272350, 272350)
 The remarkable sensitivity of the c<missing VAR>-axis resistivity and magnetoresistance incuprates to the spin ordering is used to clarify the doping-inducedtransformation from an antiferromagnetic (AF) insulator to a superconducting(SC) metal in R<missing VAR>Ba2Cu3O6x<missing VAR> (R<missing VAR>  Lu, Y) single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Magnetic-field induced superconductor-antiferromagnet transition in lightly doped RBa_2Cu_3O_{6+x} (R = Lu, Y) crystals|A. N. Lavrov,L. P. Kozeeva,M. R. Trunin,V. N. Zverev###
(272374, 272374)
 The establishedphase diagram demonstrates that the AF and SC regions apparently overlap thesuperconductivity in R<missing VAR>Ba2Cu3O6x<missing VAR>, in contrast to La2-xSrx<missing VAR>CuO4, setsin before the long-range AF order is completely destroyed by hole doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SC
###Magnetic-field induced superconductor-antiferromagnet transition in lightly doped RBa_2Cu_3O_{6+x} (R = Lu, Y) crystals|A. N. Lavrov,L. P. Kozeeva,M. R. Trunin,V. N. Zverev###
(272378, 272379)
 The establishedphase diagram demonstrates that the AF and SC regions apparently overlap thesuperconductivity in R<missing VAR>Ba2Cu3O6x<missing VAR>, in contrast to La2-xSrx<missing VAR>CuO4, setsin before the long-range AF order is completely destroyed by hole doping.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ba2Cu3O6
###Magnetic-field induced superconductor-antiferromagnet transition in lightly doped RBa_2Cu_3O_{6+x} (R = Lu, Y) crystals|A. N. Lavrov,L. P. Kozeeva,M. R. Trunin,V. N. Zverev###
(272395, 272400)
 The establishedphase diagram demonstrates that the AF and SC regions apparently overlap thesuperconductivity in R<missing VAR>Ba2Cu3O6x<missing VAR>, in contrast to La2-xSrx<missing VAR>CuO4, setsin before the long-range AF order is completely destroyed by hole doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5454545454545454,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2727272727272727,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La2-xSr
###Magnetic-field induced superconductor-antiferromagnet transition in lightly doped RBa_2Cu_3O_{6+x} (R = Lu, Y) crystals|A. N. Lavrov,L. P. Kozeeva,M. R. Trunin,V. N. Zverev###
(272410, 272414)
 The establishedphase diagram demonstrates that the AF and SC regions apparently overlap thesuperconductivity in R<missing VAR>Ba2Cu3O6x<missing VAR>, in contrast to La2-xSrx<missing VAR>CuO4, setsin before the long-range AF order is completely destroyed by hole doping.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

CuO4
###Magnetic-field induced superconductor-antiferromagnet transition in lightly doped RBa_2Cu_3O_{6+x} (R = Lu, Y) crystals|A. N. Lavrov,L. P. Kozeeva,M. R. Trunin,V. N. Zverev###
(272416, 272418)
 The establishedphase diagram demonstrates that the AF and SC regions apparently overlap thesuperconductivity in R<missing VAR>Ba2Cu3O6x<missing VAR>, in contrast to La2-xSrx<missing VAR>CuO4, setsin before the long-range AF order is completely destroyed by hole doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Magnetic-field induced superconductor-antiferromagnet transition in lightly doped RBa_2Cu_3O_{6+x} (R = Lu, Y) crystals|A. N. Lavrov,L. P. Kozeeva,M. R. Trunin,V. N. Zverev###
(272435, 272435)
 The establishedphase diagram demonstrates that the AF and SC regions apparently overlap thesuperconductivity in R<missing VAR>Ba2Cu3O6x<missing VAR>, in contrast to La2-xSrx<missing VAR>CuO4, setsin before the long-range AF order is completely destroyed by hole doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Magnetic-field induced superconductor-antiferromagnet transition in lightly doped RBa_2Cu_3O_{6+x} (R = Lu, Y) crystals|A. N. Lavrov,L. P. Kozeeva,M. R. Trunin,V. N. Zverev###
(272474, 272474)
Magnetoresistance measurements of superconducting crystals with low Tc<15-20 Kgive a clear view of the magnetic-field induced superconductivity suppressionand recovery of the long-range AF state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Magnetic-field induced superconductor-antiferromagnet transition in lightly doped RBa_2Cu_3O_{6+x} (R = Lu, Y) crystals|A. N. Lavrov,L. P. Kozeeva,M. R. Trunin,V. N. Zverev###
(272513, 272513)
Magnetoresistance measurements of superconducting crystals with low Tc<15-20 Kgive a clear view of the magnetic-field induced superconductivity suppressionand recovery of the long-range AF state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Magnetic-field induced superconductor-antiferromagnet transition in lightly doped RBa_2Cu_3O_{6+x} (R = Lu, Y) crystals|A. N. Lavrov,L. P. Kozeeva,M. R. Trunin,V. N. Zverev###
(272538, 272538)
 What still remains to be understood iswhether the AF order actually persists in the SC state or just revives when thesuperconductivity is suppressed, and, in the former case, whether theantiferromagnetism and superconductivity reside in nanoscopically separatedphases or coexist on an atomic scale.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SC
###Magnetic-field induced superconductor-antiferromagnet transition in lightly doped RBa_2Cu_3O_{6+x} (R = Lu, Y) crystals|A. N. Lavrov,L. P. Kozeeva,M. R. Trunin,V. N. Zverev###
(272550, 272551)
 What still remains to be understood iswhether the AF order actually persists in the SC state or just revives when thesuperconductivity is suppressed, and, in the former case, whether theantiferromagnetism and superconductivity reside in nanoscopically separatedphases or coexist on an atomic scale.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CN
###Magnetoresistance in Spin-Polarized Transport through a Carbon Nanotube|Tae-Suk Kim,Choong-Ki Lee,Hyun-Woo Lee,B. C. Lee,K. Rhie###
(272962, 272963)
 We report on our theoretical study of the magnetoresistance in spin polarizedtransport through a finite carbon nanotube (CNT).
Featurization terminated normally.
0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CN
###Magnetoresistance in Spin-Polarized Transport through a Carbon Nanotube|Tae-Suk Kim,Choong-Ki Lee,Hyun-Woo Lee,B. C. Lee,K. Rhie###
(272981, 272982)
 Varying the Fermi energy of aCNT<missing VAR> and the relative strength of couplings to two ferromagnetic (FM)electrodes, we studied the conductance as well as the magnetoresistance (MR).
Featurization terminated normally.
0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Magnetoresistance in Spin-Polarized Transport through a Carbon Nanotube|Tae-Suk Kim,Choong-Ki Lee,Hyun-Woo Lee,B. C. Lee,K. Rhie###
(273004, 273004)
 Varying the Fermi energy of aCNT<missing VAR> and the relative strength of couplings to two ferromagnetic (FM)electrodes, we studied the conductance as well as the magnetoresistance (MR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CN
###Magnetoresistance in Spin-Polarized Transport through a Carbon Nanotube|Tae-Suk Kim,Choong-Ki Lee,Hyun-Woo Lee,B. C. Lee,K. Rhie###
(273059, 273060)
Due to resonant transport through discrete energy levels in a finite CNT<missing VAR>, theconductance and MR are oscillating as a function of the CNT<missing VAR> Fermi energy.
Featurization terminated normally.
0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CN
###Magnetoresistance in Spin-Polarized Transport through a Carbon Nanotube|Tae-Suk Kim,Choong-Ki Lee,Hyun-Woo Lee,B. C. Lee,K. Rhie###
(273088, 273089)
Due to resonant transport through discrete energy levels in a finite CNT<missing VAR>, theconductance and MR are oscillating as a function of the CNT<missing VAR> Fermi energy.
Featurization terminated normally.
0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Magnetoresistance in Spin-Polarized Transport through a Carbon Nanotube|Tae-Suk Kim,Choong-Ki Lee,Hyun-Woo Lee,B. C. Lee,K. Rhie###
(273139, 273139)
 When couplings to two FM<missing VAR> electrodes are asymmetric, the MR dips becomenegative under a rather strong asymmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CN
###Magnetoresistance in Spin-Polarized Transport through a Carbon Nanotube|Tae-Suk Kim,Choong-Ki Lee,Hyun-Woo Lee,B. C. Lee,K. Rhie###
(273253, 273254)
Under strong coupling case, the line broadening is significant and transportchannels through neighboring energy levels in a CNT<missing VAR> interfere with each other,leading to the negative MR.
Featurization terminated normally.
0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrLaCuO
###Magnetoresistance and Hall effect in e-doped superconducting SrLaCuO thin films|V. Jovanovic,Z. Z. Li,F. Bouquet,L. Fruchter,H. Raffy###
(273303, 273306)
Magnetoresistance and Hall effect in e<missing VAR>-doped superconducting SrLaCuO thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La1-xCuO2
###Magnetoresistance and Hall effect in e-doped superconducting SrLaCuO thin films|V. Jovanovic,Z. Z. Li,F. Bouquet,L. Fruchter,H. Raffy###
(273328, 273334)
 We have epitaxially grown c<missing VAR>-axis oriented SrxLa1-xCuO2 thin films by rfsputtering on KTaO3 substrates with x<missing VAR>  0.12.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

KTaO3
###Magnetoresistance and Hall effect in e-doped superconducting SrLaCuO thin films|V. Jovanovic,Z. Z. Li,F. Bouquet,L. Fruchter,H. Raffy###
(273349, 273352)
 We have epitaxially grown c<missing VAR>-axis oriented SrxLa1-xCuO2 thin films by rfsputtering on KTaO3 substrates with x<missing VAR>  0.12.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###Magnetoresistance and Hall effect in e-doped superconducting SrLaCuO thin films|V. Jovanovic,Z. Z. Li,F. Bouquet,L. Fruchter,H. Raffy###
(273393, 273393)
 The as-grown deposits areinsulating and a series of superconducting films with various Tc(R<missing VAR>0) up to 26K have been obtained by in-situ oxygen reduction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Magnetoresistance and Hall effect in e-doped superconducting SrLaCuO thin films|V. Jovanovic,Z. Z. Li,F. Bouquet,L. Fruchter,H. Raffy###
(273406, 273406)
 The as-grown deposits areinsulating and a series of superconducting films with various Tc(R<missing VAR>0) up to 26K have been obtained by in-situ oxygen reduction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###Magnetoresistance and Hall effect in e-doped superconducting SrLaCuO thin films|V. Jovanovic,Z. Z. Li,F. Bouquet,L. Fruchter,H. Raffy###
(273492, 273492)
 We report original results onthe temperature dependence of the Hall effect and on the anisotropicmagnetoresistance (T<missing VAR> > Tc).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BiSr(La)CuO
###Magnetoresistance and Hall effect in e-doped superconducting SrLaCuO thin films|V. Jovanovic,Z. Z. Li,F. Bouquet,L. Fruchter,H. Raffy###
(273616, 273622)
These properties are compared to those of hole-doped cuprates, such asBiSr(La)CuO with comparable Tc.
Featurization terminated normally.
0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###Magnetoresistance and Hall effect in e-doped superconducting SrLaCuO thin films|V. Jovanovic,Z. Z. Li,F. Bouquet,L. Fruchter,H. Raffy###
(273628, 273628)
These properties are compared to those of hole-doped cuprates, such asBiSr(La)CuO with comparable Tc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###Theory of Weak Localization in Ferromagnetic (Ga,Mn)As|Ion Garate,Jairo Sinova,T. Jungwirth,A. H. MacDonald###
(273652, 273652)
Theory of Weak Localization in Ferromagnetic (Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 1, '%', 2]

Mn
###Theory of Weak Localization in Ferromagnetic (Ga,Mn)As|Ion Garate,Jairo Sinova,T. Jungwirth,A. H. MacDonald###
(273654, 273654)
Theory of Weak Localization in Ferromagnetic (Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 1, '%', 2]

As
###Theory of Weak Localization in Ferromagnetic (Ga,Mn)As|Ion Garate,Jairo Sinova,T. Jungwirth,A. H. MacDonald###
(273656, 273656)
Theory of Weak Localization in Ferromagnetic (Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 1, '%', 2]

Ga
###Theory of Weak Localization in Ferromagnetic (Ga,Mn)As|Ion Garate,Jairo Sinova,T. Jungwirth,A. H. MacDonald###
(273678, 273678)
 We study quantum interference corrections to the conductivity in (Ga,Mn)Asferromagnetic semiconductors using a model with disordered valence band holescoupled to localized Mn moments through a p-d kinetic-exchange interaction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 1, '%', 1]

Mn
###Theory of Weak Localization in Ferromagnetic (Ga,Mn)As|Ion Garate,Jairo Sinova,T. Jungwirth,A. H. MacDonald###
(273680, 273680)
 We study quantum interference corrections to the conductivity in (Ga,Mn)Asferromagnetic semiconductors using a model with disordered valence band holescoupled to localized Mn moments through a p-d kinetic-exchange interaction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 1, '%', 1]

As
###Theory of Weak Localization in Ferromagnetic (Ga,Mn)As|Ion Garate,Jairo Sinova,T. Jungwirth,A. H. MacDonald###
(273682, 273682)
 We study quantum interference corrections to the conductivity in (Ga,Mn)Asferromagnetic semiconductors using a model with disordered valence band holescoupled to localized Mn moments through a p-d kinetic-exchange interaction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 1, '%', 1]

Mn
###Theory of Weak Localization in Ferromagnetic (Ga,Mn)As|Ion Garate,Jairo Sinova,T. Jungwirth,A. H. MacDonald###
(273712, 273712)
 We study quantum interference corrections to the conductivity in (Ga,Mn)Asferromagnetic semiconductors using a model with disordered valence band holescoupled to localized Mn moments through a p-d kinetic-exchange interaction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 1, '%', 1]

Mn
###Theory of Weak Localization in Ferromagnetic (Ga,Mn)As|Ion Garate,Jairo Sinova,T. Jungwirth,A. H. MacDonald###
(273740, 273740)
 Wefind that at Mn concentrations above 1% quantum interference corrections leadto negative magnetoresistance, i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 1, '%', 0]

W
###Theory of Weak Localization in Ferromagnetic (Ga,Mn)As|Ion Garate,Jairo Sinova,T. Jungwirth,A. H. MacDonald###
(273777, 273777)
 to weak localization (WL) rather than weakantilocalization (WAL).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 1, '%', 1]

W
###Theory of Weak Localization in Ferromagnetic (Ga,Mn)As|Ion Garate,Jairo Sinova,T. Jungwirth,A. H. MacDonald###
(273791, 273791)
 to weak localization (WL) rather than weakantilocalization (WAL).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 1, '%', 1]

Ga
###Theory of Weak Localization in Ferromagnetic (Ga,Mn)As|Ion Garate,Jairo Sinova,T. Jungwirth,A. H. MacDonald###
(273813, 273813)
 Our work highlights key qualitative differences between(Ga,Mn)As and previously studied toy model systems, and pinpoints the mechanismby which exchange splitting in the ferromagnetic state converts valence bandWAL<missing VAR> into WL<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 1, '%', 2]

Mn
###Theory of Weak Localization in Ferromagnetic (Ga,Mn)As|Ion Garate,Jairo Sinova,T. Jungwirth,A. H. MacDonald###
(273815, 273815)
 Our work highlights key qualitative differences between(Ga,Mn)As and previously studied toy model systems, and pinpoints the mechanismby which exchange splitting in the ferromagnetic state converts valence bandWAL<missing VAR> into WL<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 1, '%', 2]

As
###Theory of Weak Localization in Ferromagnetic (Ga,Mn)As|Ion Garate,Jairo Sinova,T. Jungwirth,A. H. MacDonald###
(273817, 273817)
 Our work highlights key qualitative differences between(Ga,Mn)As and previously studied toy model systems, and pinpoints the mechanismby which exchange splitting in the ferromagnetic state converts valence bandWAL<missing VAR> into WL<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 1, '%', 2]

W
###Theory of Weak Localization in Ferromagnetic (Ga,Mn)As|Ion Garate,Jairo Sinova,T. Jungwirth,A. H. MacDonald###
(273864, 273864)
 Our work highlights key qualitative differences between(Ga,Mn)As and previously studied toy model systems, and pinpoints the mechanismby which exchange splitting in the ferromagnetic state converts valence bandWAL<missing VAR> into WL<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 1, '%', 2]

W
###Theory of Weak Localization in Ferromagnetic (Ga,Mn)As|Ion Garate,Jairo Sinova,T. Jungwirth,A. H. MacDonald###
(273870, 273870)
 Our work highlights key qualitative differences between(Ga,Mn)As and previously studied toy model systems, and pinpoints the mechanismby which exchange splitting in the ferromagnetic state converts valence bandWAL<missing VAR> into WL<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 1, '%', 2]

Ga
###Theory of Weak Localization in Ferromagnetic (Ga,Mn)As|Ion Garate,Jairo Sinova,T. Jungwirth,A. H. MacDonald###
(273904, 273904)
 We comment on recent experimental studies and theoretical analysesof low-temperature magnetoresistance in (Ga,Mn)As which have been variouslyinterpreted as implying both WL<missing VAR> and WAL<missing VAR> and as requiring an impurity-bandinterpretation of transport in metallic (Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 1, '%', 3]

Mn
###Theory of Weak Localization in Ferromagnetic (Ga,Mn)As|Ion Garate,Jairo Sinova,T. Jungwirth,A. H. MacDonald###
(273906, 273906)
 We comment on recent experimental studies and theoretical analysesof low-temperature magnetoresistance in (Ga,Mn)As which have been variouslyinterpreted as implying both WL<missing VAR> and WAL<missing VAR> and as requiring an impurity-bandinterpretation of transport in metallic (Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 1, '%', 3]

As
###Theory of Weak Localization in Ferromagnetic (Ga,Mn)As|Ion Garate,Jairo Sinova,T. Jungwirth,A. H. MacDonald###
(273908, 273908)
 We comment on recent experimental studies and theoretical analysesof low-temperature magnetoresistance in (Ga,Mn)As which have been variouslyinterpreted as implying both WL<missing VAR> and WAL<missing VAR> and as requiring an impurity-bandinterpretation of transport in metallic (Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 1, '%', 3]

W
###Theory of Weak Localization in Ferromagnetic (Ga,Mn)As|Ion Garate,Jairo Sinova,T. Jungwirth,A. H. MacDonald###
(273927, 273927)
 We comment on recent experimental studies and theoretical analysesof low-temperature magnetoresistance in (Ga,Mn)As which have been variouslyinterpreted as implying both WL<missing VAR> and WAL<missing VAR> and as requiring an impurity-bandinterpretation of transport in metallic (Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 1, '%', 3]

W
###Theory of Weak Localization in Ferromagnetic (Ga,Mn)As|Ion Garate,Jairo Sinova,T. Jungwirth,A. H. MacDonald###
(273932, 273932)
 We comment on recent experimental studies and theoretical analysesof low-temperature magnetoresistance in (Ga,Mn)As which have been variouslyinterpreted as implying both WL<missing VAR> and WAL<missing VAR> and as requiring an impurity-bandinterpretation of transport in metallic (Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, 1, '%', 3]

Ga
###Theory of Weak Localization in Ferromagnetic (Ga,Mn)As|Ion Garate,Jairo Sinova,T. Jungwirth,A. H. MacDonald###
(273960, 273960)
 We comment on recent experimental studies and theoretical analysesof low-temperature magnetoresistance in (Ga,Mn)As which have been variouslyinterpreted as implying both WL<missing VAR> and WAL<missing VAR> and as requiring an impurity-bandinterpretation of transport in metallic (Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[214.0, 1, '%', 3]

Mn
###Theory of Weak Localization in Ferromagnetic (Ga,Mn)As|Ion Garate,Jairo Sinova,T. Jungwirth,A. H. MacDonald###
(273962, 273962)
 We comment on recent experimental studies and theoretical analysesof low-temperature magnetoresistance in (Ga,Mn)As which have been variouslyinterpreted as implying both WL<missing VAR> and WAL<missing VAR> and as requiring an impurity-bandinterpretation of transport in metallic (Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[216.0, 1, '%', 3]

As
###Theory of Weak Localization in Ferromagnetic (Ga,Mn)As|Ion Garate,Jairo Sinova,T. Jungwirth,A. H. MacDonald###
(273964, 273964)
 We comment on recent experimental studies and theoretical analysesof low-temperature magnetoresistance in (Ga,Mn)As which have been variouslyinterpreted as implying both WL<missing VAR> and WAL<missing VAR> and as requiring an impurity-bandinterpretation of transport in metallic (Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[218.0, 1, '%', 3]

(B)
###Graphene magnetoresistance in a parallel magnetic field: Spin polarization effect|E. H. Hwang,S. Das Sarma###
(274054, 274056)
 We develop a theory for graphene magnetotransport in the presence of carrierspin polarization as induced, for example, by the application of an in-planemagnetic field (B) parallel to the 2D graphene layer.
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 2, 'D', 0]

B2
###Graphene magnetoresistance in a parallel magnetic field: Spin polarization effect|E. H. Hwang,S. Das Sarma###
(274085, 274086)
 We predict a negativemagnetoresistance sigma propto B2 for intrinsic graphene, but forextrinsic graphene we find a non-monotonic magnetoresistance which is positiveat lower magnetic fields (below the full spin-polarization) and negative atvery high fields (above the full spin-polarization).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 2, 'D', 1]

B0
###Coherent Oscillations and Giant Edge Magnetoresistance in Singly Connected Topological Insulators|Rui-Lin Chu,Jian Li,J. K. Jain,Shun-Qing Shen###
(274455, 274456)
 Theoscillations occur due to quantum interference of helical edge states ofelectrons traveling along the circumference of the sample, and have a period ofB0h/eAeff, where Aeff is the effective area enclosed by the edge statesof the sample.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Coherent Oscillations and Giant Edge Magnetoresistance in Singly Connected Topological Insulators|Rui-Lin Chu,Jian Li,J. K. Jain,Shun-Qing Shen###
(274524, 274524)
 Our calculation indicates the possibility of a large change inthe magnetoresistance at small B, termed giant edge magnetoresistance, whichcan have potential for application.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.7Sr0.3MnO3
###Huge ac magnetoresistance in La0.7Sr0.3MnO3 in sub- kilo gauss magnetic fields|A. Rebello,V. B. Naik,R. Mahendiran###
(274657, 274663)
Huge ac magnetoresistance in La0.7Sr0.3MnO3 in sub- kilo gauss magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 0.1, 'to', 2],[141.0, 5, 'MHz', 2],[264.0, 2, 'MHz', 5],[277.0, 1, 'kOe', 5]

La0.7Sr0.3MnO3
###Huge ac magnetoresistance in La0.7Sr0.3MnO3 in sub- kilo gauss magnetic fields|A. Rebello,V. B. Naik,R. Mahendiran###
(274699, 274705)
 We report dynamical magnetotransport in a ferromagnetic metallic oxide,La0.7Sr0.3MnO3 using the ac impedance technique.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 0.1, 'to', 1],[99.0, 5, 'MHz', 1],[222.0, 2, 'MHz', 4],[235.0, 1, 'kOe', 4]

C
###Huge ac magnetoresistance in La0.7Sr0.3MnO3 in sub- kilo gauss magnetic fields|A. Rebello,V. B. Naik,R. Mahendiran###
(274838, 274838)
 The zerofield R<missing VAR>, which decreases smoothly around the Curie temperature T<missing VAR>C for f<missing VAR>  100k<missing VAR>Hz, transforms into a peak for f<missing VAR>  0.5-5 M<missing VAR>Hz.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 0.1, 'to', 1],[34.0, 5, 'MHz', 1],[89.0, 2, 'MHz', 2],[102.0, 1, 'kOe', 2]

C
###Huge ac magnetoresistance in La0.7Sr0.3MnO3 in sub- kilo gauss magnetic fields|A. Rebello,V. B. Naik,R. Mahendiran###
(274992, 274992)
 A hugeac magnetoresistance ( 45 % at f<missing VAR>  2 MHz) in a field of Hdc  1 kOe is foundand we attribute it to the magnetic field- induced enhancement in the skindepth and concomitant suppression of magnetic fluctuations near T<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[189.0, 0.1, 'to', 3],[188.0, 5, 'MHz', 3],[65.0, 2, 'MHz', 0],[52.0, 1, 'kOe', 0]

CaFe2As2
###Effect of pressure on transport and magnetotransport properties in CaFe2As2 single crystals|M. S. Torikachvili,S. L. Bud'ko,N. Ni,P. C. Canfield,S. T. Hannahs###
(275071, 275075)
Effect of pressure on transport and magnetotransport properties in CaFe2As2 single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.4,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CaFe2As2
###Effect of pressure on transport and magnetotransport properties in CaFe2As2 single crystals|M. S. Torikachvili,S. L. Bud'ko,N. Ni,P. C. Canfield,S. T. Hannahs###
(275146, 275150)
 The effects of pressure generated in a liquid medium, clamp, pressure cell onthe in-plane and c<missing VAR>-axis resistance, temperature-dependent Hall coefficient andlow temperature, magnetoresistance in CaFe2As2 are presented.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.4,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Effect of pressure on transport and magnetotransport properties in CaFe2As2 single crystals|M. S. Torikachvili,S. L. Bud'ko,N. Ni,P. C. Canfield,S. T. Hannahs###
(275163, 275163)
 The T<missing VAR> - P phasediagram, including the observation of a complete superconducting transition inresistivity, delineated in earlier studies is found to be highly reproducible.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CaFe2As2
###Effect of pressure on transport and magnetotransport properties in CaFe2As2 single crystals|M. S. Torikachvili,S. L. Bud'ko,N. Ni,P. C. Canfield,S. T. Hannahs###
(275246, 275250)
The Hall resistivity and low temperature magnetoresistance are sensitive todifferent states/phases observed in CaFe2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.4,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CaFe2As2
###Effect of pressure on transport and magnetotransport properties in CaFe2As2 single crystals|M. S. Torikachvili,S. L. Bud'ko,N. Ni,P. C. Canfield,S. T. Hannahs###
(275357, 275361)
 The data may be viewed as supporting the potentialimportance of non-hydrostatic components of pressure in inducingsuperconductivity in CaFe2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.4,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PrRu4P12
###Anomalous properties in the low-carrier ordered phase of PrRu4P12: Consequence of hybridization between conduction and Pr 4f electrons|S. R. Saha,H. Sugawara,T. Namiki,Y. Aoki,H. Sato###
(275390, 275394)
Anomalous properties in the low-carrier ordered phase of PrRu4P12 Consequence of hybridization between conduction and Pr 4f electrons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7058823529411765,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23529411764705882,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.058823529411764705,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 4, 'f', 0],[49.0, 63, 'K', 1],[139.0, 30, 'K', 2],[172.0, 93, '%', 2],[197.0, 30, 'K', 3],[255.0, 4, 'f', 4]

Pr
###Anomalous properties in the low-carrier ordered phase of PrRu4P12: Consequence of hybridization between conduction and Pr 4f electrons|S. R. Saha,H. Sugawara,T. Namiki,Y. Aoki,H. Sato###
(275408, 275408)
Anomalous properties in the low-carrier ordered phase of PrRu4P12 Consequence of hybridization between conduction and Pr 4f electrons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[1.0, 4, 'f', 0],[35.0, 63, 'K', 1],[125.0, 30, 'K', 2],[158.0, 93, '%', 2],[183.0, 30, 'K', 3],[241.0, 4, 'f', 4]

I
###Anomalous properties in the low-carrier ordered phase of PrRu4P12: Consequence of hybridization between conduction and Pr 4f electrons|S. R. Saha,H. Sugawara,T. Namiki,Y. Aoki,H. Sato###
(275441, 275441)
 The low-carrier ordered phase below the metal-non-metal transitiontemperature TMI  63 K of PrRu4P12 is explored by probing magnetoresistance,magnetic susceptibility, thermoelectric power, and Hall effect on high qualitysingle crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 4, 'f', 1],[2.0, 63, 'K', 0],[92.0, 30, 'K', 1],[125.0, 93, '%', 1],[150.0, 30, 'K', 2],[208.0, 4, 'f', 3]

PrRu4P12
###Anomalous properties in the low-carrier ordered phase of PrRu4P12: Consequence of hybridization between conduction and Pr 4f electrons|S. R. Saha,H. Sugawara,T. Namiki,Y. Aoki,H. Sato###
(275447, 275451)
 The low-carrier ordered phase below the metal-non-metal transitiontemperature TMI  63 K of PrRu4P12 is explored by probing magnetoresistance,magnetic susceptibility, thermoelectric power, and Hall effect on high qualitysingle crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7058823529411765,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23529411764705882,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.058823529411764705,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 4, 'f', 1],[4.0, 63, 'K', 0],[82.0, 30, 'K', 1],[115.0, 93, '%', 1],[140.0, 30, 'K', 2],[198.0, 4, 'f', 3]

I
###Anomalous properties in the low-carrier ordered phase of PrRu4P12: Consequence of hybridization between conduction and Pr 4f electrons|S. R. Saha,H. Sugawara,T. Namiki,Y. Aoki,H. Sato###
(275524, 275524)
 All the measured properties exhibit the signature ofdecimation of the Fermi surface below TMI and anomalous behaviors below 30 Kincluding a large thermoelectric power -200 u<missing VAR>V/K and a giant negativemagnetoresistance (93% at 0.4 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 4, 'f', 2],[81.0, 63, 'K', 1],[9.0, 30, 'K', 0],[42.0, 93, '%', 0],[67.0, 30, 'K', 1],[125.0, 4, 'f', 2]

V/K
###Anomalous properties in the low-carrier ordered phase of PrRu4P12: Consequence of hybridization between conduction and Pr 4f electrons|S. R. Saha,H. Sugawara,T. Namiki,Y. Aoki,H. Sato###
(275550, 275552)
 All the measured properties exhibit the signature ofdecimation of the Fermi surface below TMI and anomalous behaviors below 30 Kincluding a large thermoelectric power -200 u<missing VAR>V/K and a giant negativemagnetoresistance (93% at 0.4 K).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[141.0, 4, 'f', 2],[107.0, 63, 'K', 1],[17.0, 30, 'K', 0],[14.0, 93, '%', 0],[39.0, 30, 'K', 1],[97.0, 4, 'f', 2]

K
###Anomalous properties in the low-carrier ordered phase of PrRu4P12: Consequence of hybridization between conduction and Pr 4f electrons|S. R. Saha,H. Sugawara,T. Namiki,Y. Aoki,H. Sato###
(275573, 275573)
 All the measured properties exhibit the signature ofdecimation of the Fermi surface below TMI and anomalous behaviors below 30 Kincluding a large thermoelectric power -200 u<missing VAR>V/K and a giant negativemagnetoresistance (93% at 0.4 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 4, 'f', 2],[130.0, 63, 'K', 1],[40.0, 30, 'K', 0],[7.0, 93, '%', 0],[18.0, 30, 'K', 1],[76.0, 4, 'f', 2]

Pr
###Anomalous properties in the low-carrier ordered phase of PrRu4P12: Consequence of hybridization between conduction and Pr 4f electrons|S. R. Saha,H. Sugawara,T. Namiki,Y. Aoki,H. Sato###
(275648, 275648)
 The observed anomalous behaviorsare most likely associated with the novel role of c-f hybridization betweenconduction electrons and Pr 4f electrons, whose crystalline electric fieldlevel schemes show drastic change below TMI.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[239.0, 4, 'f', 4],[205.0, 63, 'K', 3],[115.0, 30, 'K', 2],[82.0, 93, '%', 2],[57.0, 30, 'K', 1],[1.0, 4, 'f', 0]

I
###Anomalous properties in the low-carrier ordered phase of PrRu4P12: Consequence of hybridization between conduction and Pr 4f electrons|S. R. Saha,H. Sugawara,T. Namiki,Y. Aoki,H. Sato###
(275677, 275677)
 The observed anomalous behaviorsare most likely associated with the novel role of c-f hybridization betweenconduction electrons and Pr 4f electrons, whose crystalline electric fieldlevel schemes show drastic change below TMI.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[268.0, 4, 'f', 4],[234.0, 63, 'K', 3],[144.0, 30, 'K', 2],[111.0, 93, '%', 2],[86.0, 30, 'K', 1],[28.0, 4, 'f', 0]

In
###Microwave-induced magnetoresistance of two-dimensional electrons interacting with acoustic phonons|O. E. Raichev###
(276173, 276173)
 In addition, microwave heating ofelectrons leads to a special kind of phonon-induced oscillations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

AlGaAs
###Slow relaxations of magnetoresistance in AlGaAs-GaAs quantum well structures quenched in a magnetic field|N. V. Agrinskaya,V. I. Kozub,D. V. Shamshur,A. V. Shumilin,Y. M. Galperin###
(276631, 276633)
Slow relaxations of magnetoresistance in AlGaAs-GaAs quantum well structures quenched in a magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Slow relaxations of magnetoresistance in AlGaAs-GaAs quantum well structures quenched in a magnetic field|N. V. Agrinskaya,V. I. Kozub,D. V. Shamshur,A. V. Shumilin,Y. M. Galperin###
(276635, 276636)
Slow relaxations of magnetoresistance in AlGaAs-GaAs quantum well structures quenched in a magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Slow relaxations of magnetoresistance in AlGaAs-GaAs quantum well structures quenched in a magnetic field|N. V. Agrinskaya,V. I. Kozub,D. V. Shamshur,A. V. Shumilin,Y. M. Galperin###
(276690, 276691)
 We observed a slow relaxation of magnetoresistance in response to appliedmagnetic field in selectively doped p<missing VAR>-GaAs-AlGaAs structures with partiallyfilled upper Hubbard band.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

AlGaAs
###Slow relaxations of magnetoresistance in AlGaAs-GaAs quantum well structures quenched in a magnetic field|N. V. Agrinskaya,V. I. Kozub,D. V. Shamshur,A. V. Shumilin,Y. M. Galperin###
(276693, 276695)
 We observed a slow relaxation of magnetoresistance in response to appliedmagnetic field in selectively doped p<missing VAR>-GaAs-AlGaAs structures with partiallyfilled upper Hubbard band.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Slow relaxations of magnetoresistance in AlGaAs-GaAs quantum well structures quenched in a magnetic field|N. V. Agrinskaya,V. I. Kozub,D. V. Shamshur,A. V. Shumilin,Y. M. Galperin###
(276873, 276873)
 As a result, iteffects the shape and depth of the polaron gap formed at the states belongingto the percolation cluster responsible for the conductance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Negative c-axis magnetoresistance in graphite|Y. Kopelevich,R. R. da Silva,J. C. Medina Pantoja,A. M. Bratkovsky###
(277006, 277006)
 We have studied the c<missing VAR>-axis interlayer magnetoresistance (ILMR), Rc(B) ingraphite.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 9, 'T', 1],[96.0, 2, 'K', 1],[103.0, 300, 'K', 1],[127.0, 0, ',', 2],[167.0, 5.4, 'T', 2],[173.0, 150, 'K', 2],[288.0, 102, ',', 8]

(B)
###Negative c-axis magnetoresistance in graphite|Y. Kopelevich,R. R. da Silva,J. C. Medina Pantoja,A. M. Bratkovsky###
(277015, 277017)
 We have studied the c<missing VAR>-axis interlayer magnetoresistance (ILMR), Rc(B) ingraphite.
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 9, 'T', 1],[85.0, 2, 'K', 1],[92.0, 300, 'K', 1],[116.0, 0, ',', 2],[156.0, 5.4, 'T', 2],[162.0, 150, 'K', 2],[277.0, 102, ',', 8]

HOP
###Negative c-axis magnetoresistance in graphite|Y. Kopelevich,R. R. da Silva,J. C. Medina Pantoja,A. M. Bratkovsky###
(277051, 277053)
 The measurements have been performed on strongly anisotropic highlyoriented pyrolytic graphite (HOPG) samples in magnetic field up to B  9 Tapplied both parallel and perpendicular to the sample c<missing VAR>-axis in the temperatureinterval 2 K < T<missing VAR> < 300 K.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 9, 'T', 0],[49.0, 2, 'K', 0],[56.0, 300, 'K', 0],[80.0, 0, ',', 1],[120.0, 5.4, 'T', 1],[126.0, 150, 'K', 1],[241.0, 102, ',', 7]

B
###Negative c-axis magnetoresistance in graphite|Y. Kopelevich,R. R. da Silva,J. C. Medina Pantoja,A. M. Bratkovsky###
(277069, 277069)
 The measurements have been performed on strongly anisotropic highlyoriented pyrolytic graphite (HOPG) samples in magnetic field up to B  9 Tapplied both parallel and perpendicular to the sample c<missing VAR>-axis in the temperatureinterval 2 K < T<missing VAR> < 300 K.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 9, 'T', 0],[33.0, 2, 'K', 0],[40.0, 300, 'K', 0],[64.0, 0, ',', 1],[104.0, 5.4, 'T', 1],[110.0, 150, 'K', 1],[225.0, 102, ',', 7]

B
###Negative c-axis magnetoresistance in graphite|Y. Kopelevich,R. R. da Silva,J. C. Medina Pantoja,A. M. Bratkovsky###
(277128, 277128)
 We have observed negative magnetoresistance, dRc/d<missing VAR>B< 0, for B  c<missing VAR>-axis above a certain field Bm(T) that reaches its minimumvalue Bm<missing VAR>  5.4 T at T<missing VAR>  150 K.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 9, 'T', 1],[26.0, 2, 'K', 1],[19.0, 300, 'K', 1],[5.0, 0, ',', 0],[45.0, 5.4, 'T', 0],[51.0, 150, 'K', 0],[166.0, 102, ',', 6]

B
###Negative c-axis magnetoresistance in graphite|Y. Kopelevich,R. R. da Silva,J. C. Medina Pantoja,A. M. Bratkovsky###
(277138, 277138)
 We have observed negative magnetoresistance, dRc/d<missing VAR>B< 0, for B  c<missing VAR>-axis above a certain field Bm(T) that reaches its minimumvalue Bm<missing VAR>  5.4 T at T<missing VAR>  150 K.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 9, 'T', 1],[36.0, 2, 'K', 1],[29.0, 300, 'K', 1],[5.0, 0, ',', 0],[35.0, 5.4, 'T', 0],[41.0, 150, 'K', 0],[156.0, 102, ',', 6]

B
###Negative c-axis magnetoresistance in graphite|Y. Kopelevich,R. R. da Silva,J. C. Medina Pantoja,A. M. Bratkovsky###
(277153, 277153)
 We have observed negative magnetoresistance, dRc/d<missing VAR>B< 0, for B  c<missing VAR>-axis above a certain field Bm(T) that reaches its minimumvalue Bm<missing VAR>  5.4 T at T<missing VAR>  150 K.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 9, 'T', 1],[51.0, 2, 'K', 1],[44.0, 300, 'K', 1],[20.0, 0, ',', 0],[20.0, 5.4, 'T', 0],[26.0, 150, 'K', 0],[141.0, 102, ',', 6]

B
###Negative c-axis magnetoresistance in graphite|Y. Kopelevich,R. R. da Silva,J. C. Medina Pantoja,A. M. Bratkovsky###
(277170, 277170)
 We have observed negative magnetoresistance, dRc/d<missing VAR>B< 0, for B  c<missing VAR>-axis above a certain field Bm(T) that reaches its minimumvalue Bm<missing VAR>  5.4 T at T<missing VAR>  150 K.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 9, 'T', 1],[68.0, 2, 'K', 1],[61.0, 300, 'K', 1],[37.0, 0, ',', 0],[3.0, 5.4, 'T', 0],[9.0, 150, 'K', 0],[124.0, 102, ',', 6]

I
###Negative c-axis magnetoresistance in graphite|Y. Kopelevich,R. R. da Silva,J. C. Medina Pantoja,A. M. Bratkovsky###
(277199, 277199)
 The results can be consistently understoodassuming that ILMR is related to a tunneling between zero-energy Landau levelsof quasi-two-dimensional Dirac fermions, in a close analogy with the behaviorreported for alpha-(BEDT-TTF)2I3 [N.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 9, 'T', 2],[97.0, 2, 'K', 2],[90.0, 300, 'K', 2],[66.0, 0, ',', 1],[26.0, 5.4, 'T', 1],[20.0, 150, 'K', 1],[95.0, 102, ',', 5]

B
###Negative c-axis magnetoresistance in graphite|Y. Kopelevich,R. R. da Silva,J. C. Medina Pantoja,A. M. Bratkovsky###
(277260, 277260)
 The results can be consistently understoodassuming that ILMR is related to a tunneling between zero-energy Landau levelsof quasi-two-dimensional Dirac fermions, in a close analogy with the behaviorreported for alpha-(BEDT-TTF)2I3 [N.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[189.0, 9, 'T', 2],[158.0, 2, 'K', 2],[151.0, 300, 'K', 2],[127.0, 0, ',', 1],[87.0, 5.4, 'T', 1],[81.0, 150, 'K', 1],[34.0, 102, ',', 5]

F
###Negative c-axis magnetoresistance in graphite|Y. Kopelevich,R. R. da Silva,J. C. Medina Pantoja,A. M. Bratkovsky###
(277267, 277267)
 The results can be consistently understoodassuming that ILMR is related to a tunneling between zero-energy Landau levelsof quasi-two-dimensional Dirac fermions, in a close analogy with the behaviorreported for alpha-(BEDT-TTF)2I3 [N.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[196.0, 9, 'T', 2],[165.0, 2, 'K', 2],[158.0, 300, 'K', 2],[134.0, 0, ',', 1],[94.0, 5.4, 'T', 1],[88.0, 150, 'K', 1],[27.0, 102, ',', 5]

I3
###Negative c-axis magnetoresistance in graphite|Y. Kopelevich,R. R. da Silva,J. C. Medina Pantoja,A. M. Bratkovsky###
(277270, 277271)
 The results can be consistently understoodassuming that ILMR is related to a tunneling between zero-energy Landau levelsof quasi-two-dimensional Dirac fermions, in a close analogy with the behaviorreported for alpha-(BEDT-TTF)2I3 [N.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[199.0, 9, 'T', 2],[168.0, 2, 'K', 2],[161.0, 300, 'K', 2],[137.0, 0, ',', 1],[97.0, 5.4, 'T', 1],[91.0, 150, 'K', 1],[23.0, 102, ',', 5]

N
###Negative c-axis magnetoresistance in graphite|Y. Kopelevich,R. R. da Silva,J. C. Medina Pantoja,A. M. Bratkovsky###
(277274, 277274)
 The results can be consistently understoodassuming that ILMR is related to a tunneling between zero-energy Landau levelsof quasi-two-dimensional Dirac fermions, in a close analogy with the behaviorreported for alpha-(BEDT-TTF)2I3 [N.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[203.0, 9, 'T', 2],[172.0, 2, 'K', 2],[165.0, 300, 'K', 2],[141.0, 0, ',', 1],[101.0, 5.4, 'T', 1],[95.0, 150, 'K', 1],[20.0, 102, ',', 5]

La
###Unravelling the role of the interface for spin injection into organic semiconductors|Clément Barraud,Pierre Seneor,Richard Mattana,Stéphane Fusil,Karim Bouzehouane,Cyrile Deranlot,Patrizio Graziosi,Luis Hueso,Ilaria Bergenti,Valentin Dediu,Frédéric Petroff,Albert Fert###
(277488, 277488)
 We report on gianttunnel magnetoresistance of up to 300% in a (La,Sr)MnO3/Alq3/Co nanometer sizemagnetic tunnel junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 300, '%', 0]

Sr
###Unravelling the role of the interface for spin injection into organic semiconductors|Clément Barraud,Pierre Seneor,Richard Mattana,Stéphane Fusil,Karim Bouzehouane,Cyrile Deranlot,Patrizio Graziosi,Luis Hueso,Ilaria Bergenti,Valentin Dediu,Frédéric Petroff,Albert Fert###
(277490, 277490)
 We report on gianttunnel magnetoresistance of up to 300% in a (La,Sr)MnO3/Alq3/Co nanometer sizemagnetic tunnel junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 300, '%', 0]

MnO3
###Unravelling the role of the interface for spin injection into organic semiconductors|Clément Barraud,Pierre Seneor,Richard Mattana,Stéphane Fusil,Karim Bouzehouane,Cyrile Deranlot,Patrizio Graziosi,Luis Hueso,Ilaria Bergenti,Valentin Dediu,Frédéric Petroff,Albert Fert###
(277492, 277494)
 We report on gianttunnel magnetoresistance of up to 300% in a (La,Sr)MnO3/Alq3/Co nanometer sizemagnetic tunnel junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 300, '%', 0]

Co
###Unravelling the role of the interface for spin injection into organic semiconductors|Clément Barraud,Pierre Seneor,Richard Mattana,Stéphane Fusil,Karim Bouzehouane,Cyrile Deranlot,Patrizio Graziosi,Luis Hueso,Ilaria Bergenti,Valentin Dediu,Frédéric Petroff,Albert Fert###
(277499, 277499)
 We report on gianttunnel magnetoresistance of up to 300% in a (La,Sr)MnO3/Alq3/Co nanometer sizemagnetic tunnel junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 300, '%', 0]

ZnO
###Low temperature hopping magnetotransport in paramagnetic single crystals of cobalt doped ZnO|N. Sharma,S. Granville,S. C. Kashyap,J. -Ph. Ansermet###
(277646, 277647)
Low temperature hopping magnetotransport in paramagnetic single crystals of cobalt doped ZnO.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[170.0, 20, '%', 4]

Zn1-x
###Low temperature hopping magnetotransport in paramagnetic single crystals of cobalt doped ZnO|N. Sharma,S. Granville,S. C. Kashyap,J. -Ph. Ansermet###
(277662, 277665)
 Long needle-shaped single crystals of Zn1-xCoxO were grown at lowtemperatures using a molten salt solvent technique, up to x<missing VAR>0.10.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[152.0, 20, '%', 3]

O
###Low temperature hopping magnetotransport in paramagnetic single crystals of cobalt doped ZnO|N. Sharma,S. Granville,S. C. Kashyap,J. -Ph. Ansermet###
(277667, 277667)
 Long needle-shaped single crystals of Zn1-xCoxO were grown at lowtemperatures using a molten salt solvent technique, up to x<missing VAR>0.10.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 20, '%', 3]

Zn1-x
###Low temperature hopping magnetotransport in paramagnetic single crystals of cobalt doped ZnO|N. Sharma,S. Granville,S. C. Kashyap,J. -Ph. Ansermet###
(277787, 277790)
 The positive magnetoresistance of the Zn1-xCoxO single crystalsincreases with increased Co concentration and reaches up to 20% at lowtemperatures (2.5 K) and high fields (>1 T).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[27.0, 20, '%', 0]

O
###Low temperature hopping magnetotransport in paramagnetic single crystals of cobalt doped ZnO|N. Sharma,S. Granville,S. C. Kashyap,J. -Ph. Ansermet###
(277792, 277792)
 The positive magnetoresistance of the Zn1-xCoxO single crystalsincreases with increased Co concentration and reaches up to 20% at lowtemperatures (2.5 K) and high fields (>1 T).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 20, '%', 0]

Co
###Low temperature hopping magnetotransport in paramagnetic single crystals of cobalt doped ZnO|N. Sharma,S. Granville,S. C. Kashyap,J. -Ph. Ansermet###
(277805, 277805)
 The positive magnetoresistance of the Zn1-xCoxO single crystalsincreases with increased Co concentration and reaches up to 20% at lowtemperatures (2.5 K) and high fields (>1 T).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 20, '%', 0]

K
###Low temperature hopping magnetotransport in paramagnetic single crystals of cobalt doped ZnO|N. Sharma,S. Granville,S. C. Kashyap,J. -Ph. Ansermet###
(277830, 277830)
 The positive magnetoresistance of the Zn1-xCoxO single crystalsincreases with increased Co concentration and reaches up to 20% at lowtemperatures (2.5 K) and high fields (>1 T).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 20, '%', 0]

S
###Low temperature hopping magnetotransport in paramagnetic single crystals of cobalt doped ZnO|N. Sharma,S. Granville,S. C. Kashyap,J. -Ph. Ansermet###
(277847, 277847)
 SQ<missing VAR>UID<missing VAR> magnetometry confirms thatthe Zn1-xCoxO crystals are predominantly paramagnetic in nature and themagnetic response is independent of Co concentration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 20, '%', 1]

UI
###Low temperature hopping magnetotransport in paramagnetic single crystals of cobalt doped ZnO|N. Sharma,S. Granville,S. C. Kashyap,J. -Ph. Ansermet###
(277849, 277850)
 SQ<missing VAR>UID<missing VAR> magnetometry confirms thatthe Zn1-xCoxO crystals are predominantly paramagnetic in nature and themagnetic response is independent of Co concentration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
[32.0, 20, '%', 1]

Zn1-x
###Low temperature hopping magnetotransport in paramagnetic single crystals of cobalt doped ZnO|N. Sharma,S. Granville,S. C. Kashyap,J. -Ph. Ansermet###
(277862, 277865)
 SQ<missing VAR>UID<missing VAR> magnetometry confirms thatthe Zn1-xCoxO crystals are predominantly paramagnetic in nature and themagnetic response is independent of Co concentration.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[45.0, 20, '%', 1]

O
###Low temperature hopping magnetotransport in paramagnetic single crystals of cobalt doped ZnO|N. Sharma,S. Granville,S. C. Kashyap,J. -Ph. Ansermet###
(277867, 277867)
 SQ<missing VAR>UID<missing VAR> magnetometry confirms thatthe Zn1-xCoxO crystals are predominantly paramagnetic in nature and themagnetic response is independent of Co concentration.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 20, '%', 1]

Co
###Low temperature hopping magnetotransport in paramagnetic single crystals of cobalt doped ZnO|N. Sharma,S. Granville,S. C. Kashyap,J. -Ph. Ansermet###
(277896, 277896)
 SQ<missing VAR>UID<missing VAR> magnetometry confirms thatthe Zn1-xCoxO crystals are predominantly paramagnetic in nature and themagnetic response is independent of Co concentration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 20, '%', 1]

ZnO
###Low temperature hopping magnetotransport in paramagnetic single crystals of cobalt doped ZnO|N. Sharma,S. Granville,S. C. Kashyap,J. -Ph. Ansermet###
(277920, 277921)
 The results indicate thatcobalt doping of single crystalline ZnO introduces localized electronic statesand isolated Co2 ions into the host matrix, but that the magnetotransport andmagnetic properties are decoupled.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 20, '%', 2]

Co2
###Low temperature hopping magnetotransport in paramagnetic single crystals of cobalt doped ZnO|N. Sharma,S. Granville,S. C. Kashyap,J. -Ph. Ansermet###
(277936, 277937)
 The results indicate thatcobalt doping of single crystalline ZnO introduces localized electronic statesand isolated Co2 ions into the host matrix, but that the magnetotransport andmagnetic properties are decoupled.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 20, '%', 2]

Mg12
###Multi-band effect in the noncentrosymmetric superconductors Mg_{12-δ}Ir_{19}B_{16} revealed by Hall effect and magnetoresistance measurements|Gang Mu,Huan Yang,Hai-Hu Wen###
(277992, 277993)
Multi-band effect in the noncentrosymmetric superconductors Mg12-Ir19B16 revealed by Hall effect and magnetoresistance measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 20, '%', 3],[175.0, 9, 'T', 3]

Ir19B16
###Multi-band effect in the noncentrosymmetric superconductors Mg_{12-δ}Ir_{19}B_{16} revealed by Hall effect and magnetoresistance measurements|Gang Mu,Huan Yang,Hai-Hu Wen###
(277995, 277998)
Multi-band effect in the noncentrosymmetric superconductors Mg12-Ir19B16 revealed by Hall effect and magnetoresistance measurements.
Featurization terminated normally.
0,0,0,0,0.45714285714285713,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5428571428571428,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 20, '%', 3],[170.0, 9, 'T', 3]

Mg12
###Multi-band effect in the noncentrosymmetric superconductors Mg_{12-δ}Ir_{19}B_{16} revealed by Hall effect and magnetoresistance measurements|Gang Mu,Huan Yang,Hai-Hu Wen###
(278042, 278043)
 We report the longitudinal resistivity and Hall effect measurements on thenoncentrosymmetric superconducting Mg12-deltaIr19B16 sampleswith different critical transition temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 20, '%', 2],[125.0, 9, 'T', 2]

Ir19B16
###Multi-band effect in the noncentrosymmetric superconductors Mg_{12-δ}Ir_{19}B_{16} revealed by Hall effect and magnetoresistance measurements|Gang Mu,Huan Yang,Hai-Hu Wen###
(278046, 278049)
 We report the longitudinal resistivity and Hall effect measurements on thenoncentrosymmetric superconducting Mg12-deltaIr19B16 sampleswith different critical transition temperatures.
Featurization terminated normally.
0,0,0,0,0.45714285714285713,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5428571428571428,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 20, '%', 2],[119.0, 9, 'T', 2]

H
###Multi-band effect in the noncentrosymmetric superconductors Mg_{12-δ}Ir_{19}B_{16} revealed by Hall effect and magnetoresistance measurements|Gang Mu,Huan Yang,Hai-Hu Wen###
(278083, 278083)
 A strong temperaturedependence of the Hall coefficient R<missing VAR>H and nonlinear magnetic fielddependence of the Hall resistivity rhoxy in wide temperature region areobserved, suggesting a strong multi-band effect in this system.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 20, '%', 1],[85.0, 9, 'T', 1]

C
###Unveiling First Order CMR Transitions in the Two-Orbital Model for Manganites|Cengiz Şen,Gonzalo Alvarez,Elbio Dagotto###
(278318, 278318)
Unveiling First Order CMR Transitions in the Two-Orbital Model for Manganites.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 10, ',', 2],[151.0, 0, '%', 2]

At
###Unveiling First Order CMR Transitions in the Two-Orbital Model for Manganites|Cengiz Şen,Gonzalo Alvarez,Elbio Dagotto###
(278385, 278385)
 Athole density x<missing VAR>1/4 and in the vicinity of the region of competition between theferromagnetic metallic and spin-charge-orbital ordered insulating phases, thecolossal magnetoresistance (CMR) phenomenon is observed with amagnetoresistance ratio 10,000% Our main result is that this CMR transition isfound to be of first order in some portions of the phase diagram, in agreementwith early results from neutron scattering, specific heat, and magnetization,thus solving a notorious discrepancy between experiments and previoustheoretical studies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 10, ',', 0],[84.0, 0, '%', 0]

C
###Unveiling First Order CMR Transitions in the Two-Orbital Model for Manganites|Cengiz Şen,Gonzalo Alvarez,Elbio Dagotto###
(278447, 278447)
 Athole density x<missing VAR>1/4 and in the vicinity of the region of competition between theferromagnetic metallic and spin-charge-orbital ordered insulating phases, thecolossal magnetoresistance (CMR) phenomenon is observed with amagnetoresistance ratio 10,000% Our main result is that this CMR transition isfound to be of first order in some portions of the phase diagram, in agreementwith early results from neutron scattering, specific heat, and magnetization,thus solving a notorious discrepancy between experiments and previoustheoretical studies.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 10, ',', 0],[22.0, 0, '%', 0]

C
###Unveiling First Order CMR Transitions in the Two-Orbital Model for Manganites|Cengiz Şen,Gonzalo Alvarez,Elbio Dagotto###
(278484, 278484)
 Athole density x<missing VAR>1/4 and in the vicinity of the region of competition between theferromagnetic metallic and spin-charge-orbital ordered insulating phases, thecolossal magnetoresistance (CMR) phenomenon is observed with amagnetoresistance ratio 10,000% Our main result is that this CMR transition isfound to be of first order in some portions of the phase diagram, in agreementwith early results from neutron scattering, specific heat, and magnetization,thus solving a notorious discrepancy between experiments and previoustheoretical studies.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 10, ',', 0],[15.0, 0, '%', 0]

Sn
###Anomalous scattering in superconducting indium-doped tin telluride|A. S. Erickson,T. H. Geballe,I. R. Fisher,Y. Q. Wu,M. J. Kramer###
(278689, 278689)
 Results of resistivity, Hall effect, magnetoresistance, susceptibility andheat capacity measurements are presented for single crystals of indium-dopedtin telluride with compositions Sn.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 0.3, 'K', 2],[154.0, 2, 'K', 3],[164.0, 2.7, '%', 4],[173.0, 3.8, '%', 4],[188.0, 0.7, 'K', 4]

Te
###Anomalous scattering in superconducting indium-doped tin telluride|A. S. Erickson,T. H. Geballe,I. R. Fisher,Y. Q. Wu,M. J. Kramer###
(278696, 278696)
988-xInxTe where 0 leq x<missing VAR> leq 8.4%, along with microstructural analysis based on transmission electronmicroscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 0.3, 'K', 1],[147.0, 2, 'K', 2],[157.0, 2.7, '%', 3],[166.0, 3.8, '%', 3],[181.0, 0.7, 'K', 3]

SnTe
###Anomalous scattering in superconducting indium-doped tin telluride|A. S. Erickson,T. H. Geballe,I. R. Fisher,Y. Q. Wu,M. J. Kramer###
(278930, 278931)
 Susceptibility data indicate the absence of magnetic impurities,while magnetoresistance data are inconsistent with localization effects,leading to the conclusion that indium-doped SnTe is a candidate charge Kondosystem, similar to thallium-doped PbTe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 0.3, 'K', 3],[87.0, 2, 'K', 2],[77.0, 2.7, '%', 1],[68.0, 3.8, '%', 1],[53.0, 0.7, 'K', 1]

PbTe
###Anomalous scattering in superconducting indium-doped tin telluride|A. S. Erickson,T. H. Geballe,I. R. Fisher,Y. Q. Wu,M. J. Kramer###
(278955, 278956)
 Susceptibility data indicate the absence of magnetic impurities,while magnetoresistance data are inconsistent with localization effects,leading to the conclusion that indium-doped SnTe is a candidate charge Kondosystem, similar to thallium-doped PbTe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[192.0, 0.3, 'K', 3],[112.0, 2, 'K', 2],[102.0, 2.7, '%', 1],[93.0, 3.8, '%', 1],[78.0, 0.7, 'K', 1]

BBO6
###Antisite Domains in Double Perovskite Ferromagnets: Impact on Magnetotransport and Half-metallicity|Viveka Nand Singh,Pinaki Majumdar###
(279008, 279011)
 Several double perovskite materials of the form A2BBO6 exhibit highferromagnetic Tc, and significant low field magnetoresistance.
Featurization terminated normally.
0,0,0,0,0.25,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Antisite Domains in Double Perovskite Ferromagnets: Impact on Magnetotransport and Half-metallicity|Viveka Nand Singh,Pinaki Majumdar###
(279086, 279086)
 The potential usefulness of thesematerials is, however, frustrated by mislocation of the B and B ions, which donot organise themselves in the ideal alternating structure.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Antisite Domains in Double Perovskite Ferromagnets: Impact on Magnetotransport and Half-metallicity|Viveka Nand Singh,Pinaki Majumdar###
(279090, 279090)
 The potential usefulness of thesematerials is, however, frustrated by mislocation of the B and B ions, which donot organise themselves in the ideal alternating structure.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Permalloy-based carbon nanotube spin-valve|H. Aurich,A. Baumgartner,F. Freitag,A. Eichler,J. Trbovic,C. Schoenenberger###
(279276, 279276)
 In this Letter we demonstrate that Permalloy (Py), a widely used Ni/Fe alloy,forms contacts to carbon nanotubes (CNTs) that meet the requirements for theinjection and detection of spin-polarized currents in carbon-based spintronicdevices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni/Fe
###Permalloy-based carbon nanotube spin-valve|H. Aurich,A. Baumgartner,F. Freitag,A. Eichler,J. Trbovic,C. Schoenenberger###
(279301, 279303)
 In this Letter we demonstrate that Permalloy (Py), a widely used Ni/Fe alloy,forms contacts to carbon nanotubes (CNTs) that meet the requirements for theinjection and detection of spin-polarized currents in carbon-based spintronicdevices.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

CN
###Permalloy-based carbon nanotube spin-valve|H. Aurich,A. Baumgartner,F. Freitag,A. Eichler,J. Trbovic,C. Schoenenberger###
(279320, 279321)
 In this Letter we demonstrate that Permalloy (Py), a widely used Ni/Fe alloy,forms contacts to carbon nanotubes (CNTs) that meet the requirements for theinjection and detection of spin-polarized currents in carbon-based spintronicdevices.
Featurization terminated normally.
0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Permalloy-based carbon nanotube spin-valve|H. Aurich,A. Baumgartner,F. Freitag,A. Eichler,J. Trbovic,C. Schoenenberger###
(279450, 279450)
 Inaddition, we show that Py contacts couple strongly to CNTs, comparable to Pdcontacts, thereby forming CNT<missing VAR> quantum dots at low temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CN
###Permalloy-based carbon nanotube spin-valve|H. Aurich,A. Baumgartner,F. Freitag,A. Eichler,J. Trbovic,C. Schoenenberger###
(279472, 279473)
 Inaddition, we show that Py contacts couple strongly to CNTs, comparable to Pdcontacts, thereby forming CNT<missing VAR> quantum dots at low temperatures.
Featurization terminated normally.
0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pd
###Permalloy-based carbon nanotube spin-valve|H. Aurich,A. Baumgartner,F. Freitag,A. Eichler,J. Trbovic,C. Schoenenberger###
(279481, 279481)
 Inaddition, we show that Py contacts couple strongly to CNTs, comparable to Pdcontacts, thereby forming CNT<missing VAR> quantum dots at low temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CN
###Permalloy-based carbon nanotube spin-valve|H. Aurich,A. Baumgartner,F. Freitag,A. Eichler,J. Trbovic,C. Schoenenberger###
(279491, 279492)
 Inaddition, we show that Py contacts couple strongly to CNTs, comparable to Pdcontacts, thereby forming CNT<missing VAR> quantum dots at low temperatures.
Featurization terminated normally.
0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CN
###Permalloy-based carbon nanotube spin-valve|H. Aurich,A. Baumgartner,F. Freitag,A. Eichler,J. Trbovic,C. Schoenenberger###
(279525, 279526)
 These resultsform the basis for a Py-based CNT<missing VAR> spin-valve exhibiting very sharp resistanceswitchings in the tunneling magnetoresistance, which directly correspond to themagnetization reversals in the individual contacts observed in AMR experiments.
Featurization terminated normally.
0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Superconductor-Insulator Magneto-Oscillations in Superconducting Strips|Yeshayahu Atzmon,Efrat Shimshoni###
(279635, 279635)
 The magnetoresistance of thin superconducting strips subject to aperpendicular magnetic field B and low temperatures T<missing VAR> manifests a sequence ofalternating superconductor-insulator transitions (SIT).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 1, 'D', 2],[214.0, 0, ',', 3]

SI
###Superconductor-Insulator Magneto-Oscillations in Superconducting Strips|Yeshayahu Atzmon,Efrat Shimshoni###
(279663, 279664)
 The magnetoresistance of thin superconducting strips subject to aperpendicular magnetic field B and low temperatures T<missing VAR> manifests a sequence ofalternating superconductor-insulator transitions (SIT).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 1, 'D', 2],[185.0, 0, ',', 3]

SC
###Superconductor-Insulator Magneto-Oscillations in Superconducting Strips|Yeshayahu Atzmon,Efrat Shimshoni###
(279722, 279723)
 We study thisphenomenon within a quasi one-dimensional (1D) model for the quantum dynamicsof vortices in a line-junction between coupled parallel SC wires, at parametersclose to their SIT<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 1, 'D', 1],[126.0, 0, ',', 2]

SI
###Superconductor-Insulator Magneto-Oscillations in Superconducting Strips|Yeshayahu Atzmon,Efrat Shimshoni###
(279739, 279740)
 We study thisphenomenon within a quasi one-dimensional (1D) model for the quantum dynamicsof vortices in a line-junction between coupled parallel SC wires, at parametersclose to their SIT<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 1, 'D', 1],[109.0, 0, ',', 2]

B
###Superconductor-Insulator Magneto-Oscillations in Superconducting Strips|Yeshayahu Atzmon,Efrat Shimshoni###
(279770, 279770)
 Mapping the vortex system to 1D Fermions at a chemicalpotential dictated by B, we find that a quantum phase transition of the Isingtype occurs at critical values of the vortex filling, from a SC phase nearinteger filling to an insulator near 1/2-filling.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 1, 'D', 0],[79.0, 0, ',', 1]

SC
###Superconductor-Insulator Magneto-Oscillations in Superconducting Strips|Yeshayahu Atzmon,Efrat Shimshoni###
(279817, 279818)
 Mapping the vortex system to 1D Fermions at a chemicalpotential dictated by B, we find that a quantum phase transition of the Isingtype occurs at critical values of the vortex filling, from a SC phase nearinteger filling to an insulator near 1/2-filling.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 1, 'D', 0],[31.0, 0, ',', 1]

(B)
###Superconductor-Insulator Magneto-Oscillations in Superconducting Strips|Yeshayahu Atzmon,Efrat Shimshoni###
(279860, 279862)
 For T<missing VAR>->0, the resultingmagnetoresistance R<missing VAR>(B) exhibits oscillations similar to the experimentalobservation.
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 1, 'D', 1],[11.0, 0, ',', 0]

In
###Imaging Coulomb Islands in a Quantum Hall Interferometer|B. Hackens,F. Martins,S. Faniel,C. A. Dutu,H. Sellier,S. Huant,M. Pala,L. Desplanque,X. Wallart,V. Bayot###
(280234, 280234)
 In the Quantum Hall regime, near integer filling factors, electrons shouldonly be transmitted through spatially-separated edge states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Spin effects in transport through single-molecule magnets in the sequential and cotunneling regimes|Maciej Misiorny,Ireneusz Weymann,Jozef Barnas###
(280853, 280853)
 The effects ofexternal magnetic field and the role of type and strength of exchangeinteraction between the LUMO level and the molecules<missing VAR> spin are also considered.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ge
###Effect Of Weak Magnetic Field ($\sim $\,300 Gs) On the Intensity of Terahertz Emission of Hot Electrons in $n$-Ge at Helium Temperatures|V. M. Bondar,P. M. Tomchuk,G. A. Shepel'skii###
(280981, 280981)
Effect Of Weak Magnetic Field (sim ,300 Gs) On the Intensity of Terahertz Emission of Hot Electrons in n<missing VAR>-Ge at Helium Temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 1, ',', 1],[88.0, 0, ',', 1],[158.0, 1000, '%', 2]

Ge
###Effect Of Weak Magnetic Field ($\sim $\,300 Gs) On the Intensity of Terahertz Emission of Hot Electrons in $n$-Ge at Helium Temperatures|V. M. Bondar,P. M. Tomchuk,G. A. Shepel'skii###
(281058, 281058)
 Experimental results of studying the effect of a weak magnetic field (sim300 Gs) on the intensity of the terahertz emission (lambda approx 100 mum) of hot electrons in n<missing VAR>-Ge (crystallographic orientation < 1,0,0 >) athelium temperatures (T<missing VAR>sim 5 K) are presented and discussed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 1, ',', 0],[11.0, 0, ',', 0],[81.0, 1000, '%', 1]

K
###Effect Of Weak Magnetic Field ($\sim $\,300 Gs) On the Intensity of Terahertz Emission of Hot Electrons in $n$-Ge at Helium Temperatures|V. M. Bondar,P. M. Tomchuk,G. A. Shepel'skii###
(281089, 281089)
 Experimental results of studying the effect of a weak magnetic field (sim300 Gs) on the intensity of the terahertz emission (lambda approx 100 mum) of hot electrons in n<missing VAR>-Ge (crystallographic orientation < 1,0,0 >) athelium temperatures (T<missing VAR>sim 5 K) are presented and discussed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 1, ',', 0],[20.0, 0, ',', 0],[50.0, 1000, '%', 1]

SrRuO3
###Orthorhombic to tetragonal transition of SrRuO3 layers in Pr0.7Ca0.3MnO3/SrRuO3 superlattices|M. Ziese,I. Vrejoiu,E. Pippel,E. Nikulina,D. Hesse###
(281292, 281295)
Orthorhombic to tetragonal transition of SrRuO3 layers in Pr0.7Ca0.3MnO3/SrRuO3 superlattices.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[287.0, 1.5, 'nm', 6],[342.0, 4.0, 'nm', 6]

Pr0.7Ca0.3MnO3/SrRuO3
###Orthorhombic to tetragonal transition of SrRuO3 layers in Pr0.7Ca0.3MnO3/SrRuO3 superlattices|M. Ziese,I. Vrejoiu,E. Pippel,E. Nikulina,D. Hesse###
(281301, 281312)
Orthorhombic to tetragonal transition of SrRuO3 layers in Pr0.7Ca0.3MnO3/SrRuO3 superlattices.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[270.0, 1.5, 'nm', 6],[325.0, 4.0, 'nm', 6]

Pr0.7Ca0.3MnO3/SrRuO3
###Orthorhombic to tetragonal transition of SrRuO3 layers in Pr0.7Ca0.3MnO3/SrRuO3 superlattices|M. Ziese,I. Vrejoiu,E. Pippel,E. Nikulina,D. Hesse###
(281321, 281332)
 High-quality Pr0.7Ca0.3MnO3/SrRuO3 superlattices with ultrathin layers werefabricated by pulsed laser deposition on SrTiO3 substrates.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[250.0, 1.5, 'nm', 5],[305.0, 4.0, 'nm', 5]

SrTiO3
###Orthorhombic to tetragonal transition of SrRuO3 layers in Pr0.7Ca0.3MnO3/SrRuO3 superlattices|M. Ziese,I. Vrejoiu,E. Pippel,E. Nikulina,D. Hesse###
(281357, 281360)
 High-quality Pr0.7Ca0.3MnO3/SrRuO3 superlattices with ultrathin layers werefabricated by pulsed laser deposition on SrTiO3 substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[222.0, 1.5, 'nm', 5],[277.0, 4.0, 'nm', 5]

SrRuO3
###Orthorhombic to tetragonal transition of SrRuO3 layers in Pr0.7Ca0.3MnO3/SrRuO3 superlattices|M. Ziese,I. Vrejoiu,E. Pippel,E. Nikulina,D. Hesse###
(281438, 281441)
 Viewed along the growth direction, SrRuO3 and Pr0.7Ca0.3MnO3layers were terminated by RuO2 and MnO2, respectively, which imposes a uniquestructure to their interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 1.5, 'nm', 2],[196.0, 4.0, 'nm', 2]

Pr0.7Ca0.3MnO3
###Orthorhombic to tetragonal transition of SrRuO3 layers in Pr0.7Ca0.3MnO3/SrRuO3 superlattices|M. Ziese,I. Vrejoiu,E. Pippel,E. Nikulina,D. Hesse###
(281445, 281451)
 Viewed along the growth direction, SrRuO3 and Pr0.7Ca0.3MnO3layers were terminated by RuO2 and MnO2, respectively, which imposes a uniquestructure to their interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 1.5, 'nm', 2],[186.0, 4.0, 'nm', 2]

RuO2
###Orthorhombic to tetragonal transition of SrRuO3 layers in Pr0.7Ca0.3MnO3/SrRuO3 superlattices|M. Ziese,I. Vrejoiu,E. Pippel,E. Nikulina,D. Hesse###
(281462, 281464)
 Viewed along the growth direction, SrRuO3 and Pr0.7Ca0.3MnO3layers were terminated by RuO2 and MnO2, respectively, which imposes a uniquestructure to their interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 1.5, 'nm', 2],[173.0, 4.0, 'nm', 2]

MnO2
###Orthorhombic to tetragonal transition of SrRuO3 layers in Pr0.7Ca0.3MnO3/SrRuO3 superlattices|M. Ziese,I. Vrejoiu,E. Pippel,E. Nikulina,D. Hesse###
(281468, 281470)
 Viewed along the growth direction, SrRuO3 and Pr0.7Ca0.3MnO3layers were terminated by RuO2 and MnO2, respectively, which imposes a uniquestructure to their interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 1.5, 'nm', 2],[167.0, 4.0, 'nm', 2]

SrRuO3
###Orthorhombic to tetragonal transition of SrRuO3 layers in Pr0.7Ca0.3MnO3/SrRuO3 superlattices|M. Ziese,I. Vrejoiu,E. Pippel,E. Nikulina,D. Hesse###
(281509, 281512)
 Superlattices with a constant thickness of theSrRuO3 layers, but varying thickness of the Pr0.7Ca0.3MnO3 layers showed achange of crystalline symmetry of the SrRuO3 layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 1.5, 'nm', 1],[125.0, 4.0, 'nm', 1]

Pr0.7Ca0.3MnO3
###Orthorhombic to tetragonal transition of SrRuO3 layers in Pr0.7Ca0.3MnO3/SrRuO3 superlattices|M. Ziese,I. Vrejoiu,E. Pippel,E. Nikulina,D. Hesse###
(281527, 281533)
 Superlattices with a constant thickness of theSrRuO3 layers, but varying thickness of the Pr0.7Ca0.3MnO3 layers showed achange of crystalline symmetry of the SrRuO3 layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 1.5, 'nm', 1],[104.0, 4.0, 'nm', 1]

SrRuO3
###Orthorhombic to tetragonal transition of SrRuO3 layers in Pr0.7Ca0.3MnO3/SrRuO3 superlattices|M. Ziese,I. Vrejoiu,E. Pippel,E. Nikulina,D. Hesse###
(281554, 281557)
 Superlattices with a constant thickness of theSrRuO3 layers, but varying thickness of the Pr0.7Ca0.3MnO3 layers showed achange of crystalline symmetry of the SrRuO3 layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 1.5, 'nm', 1],[80.0, 4.0, 'nm', 1]

At
###Orthorhombic to tetragonal transition of SrRuO3 layers in Pr0.7Ca0.3MnO3/SrRuO3 superlattices|M. Ziese,I. Vrejoiu,E. Pippel,E. Nikulina,D. Hesse###
(281562, 281562)
 At a low Pr0.7Ca0.3MnO3layer thickness of 1.5 nm transmission electron microscopy proved the SrRuO3layers to be orthorhombic, whereas these were non-orthorhombic for aPr0.7Ca0.3MnO3 layer thickness of 4.0 nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 1.5, 'nm', 0],[75.0, 4.0, 'nm', 0]

Pr0.7Ca0.3MnO3
###Orthorhombic to tetragonal transition of SrRuO3 layers in Pr0.7Ca0.3MnO3/SrRuO3 superlattices|M. Ziese,I. Vrejoiu,E. Pippel,E. Nikulina,D. Hesse###
(281568, 281574)
 At a low Pr0.7Ca0.3MnO3layer thickness of 1.5 nm transmission electron microscopy proved the SrRuO3layers to be orthorhombic, whereas these were non-orthorhombic for aPr0.7Ca0.3MnO3 layer thickness of 4.0 nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 1.5, 'nm', 0],[63.0, 4.0, 'nm', 0]

SrRuO3
###Orthorhombic to tetragonal transition of SrRuO3 layers in Pr0.7Ca0.3MnO3/SrRuO3 superlattices|M. Ziese,I. Vrejoiu,E. Pippel,E. Nikulina,D. Hesse###
(281594, 281597)
 At a low Pr0.7Ca0.3MnO3layer thickness of 1.5 nm transmission electron microscopy proved the SrRuO3layers to be orthorhombic, whereas these were non-orthorhombic for aPr0.7Ca0.3MnO3 layer thickness of 4.0 nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 1.5, 'nm', 0],[40.0, 4.0, 'nm', 0]

Pr0.7Ca0.3MnO3
###Orthorhombic to tetragonal transition of SrRuO3 layers in Pr0.7Ca0.3MnO3/SrRuO3 superlattices|M. Ziese,I. Vrejoiu,E. Pippel,E. Nikulina,D. Hesse###
(281624, 281630)
 At a low Pr0.7Ca0.3MnO3layer thickness of 1.5 nm transmission electron microscopy proved the SrRuO3layers to be orthorhombic, whereas these were non-orthorhombic for aPr0.7Ca0.3MnO3 layer thickness of 4.0 nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 1.5, 'nm', 0],[7.0, 4.0, 'nm', 0]

SrRuO3
###Orthorhombic to tetragonal transition of SrRuO3 layers in Pr0.7Ca0.3MnO3/SrRuO3 superlattices|M. Ziese,I. Vrejoiu,E. Pippel,E. Nikulina,D. Hesse###
(281682, 281685)
 Angular magnetoresistancemeasurements showed orthorhombic (with small monoclinic distortion) symmetry inthe first case and tetragonal symmetry of the SrRuO3 layers in the second case.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 1.5, 'nm', 1],[45.0, 4.0, 'nm', 1]

MgO/NiO
###Negative tunneling magnetoresistance by canted magnetization in MgO/NiO tunnel barriers|Hyunsoo Yang,See-Hun Yang,Dong-Chen Qi,Andrivo Rusydi,Hiroyo Kawai,Mark Saeys,Titus Leo,David J. Smith,Stuart S. P. Parkin###
(281743, 281747)
Negative tunneling magnetoresistance by canted magnetization in MgO/NiO tunnel barriers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[130.0, -16, '%', 2],[135.0, 2.8, 'K', 2]

NiO
###Negative tunneling magnetoresistance by canted magnetization in MgO/NiO tunnel barriers|Hyunsoo Yang,See-Hun Yang,Dong-Chen Qi,Andrivo Rusydi,Hiroyo Kawai,Mark Saeys,Titus Leo,David J. Smith,Stuart S. P. Parkin###
(281770, 281771)
 The influence of insertion of an ultra-thin NiO layer between the MgO barrierand ferromagnetic electrode in magnetic tunnel junctions has been investigatedby measuring the tunneling magnetoresistance and the X<missing VAR>-ray magnetic circulardichroism (XMCD).
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, -16, '%', 1],[111.0, 2.8, 'K', 1]

MgO
###Negative tunneling magnetoresistance by canted magnetization in MgO/NiO tunnel barriers|Hyunsoo Yang,See-Hun Yang,Dong-Chen Qi,Andrivo Rusydi,Hiroyo Kawai,Mark Saeys,Titus Leo,David J. Smith,Stuart S. P. Parkin###
(281779, 281780)
 The influence of insertion of an ultra-thin NiO layer between the MgO barrierand ferromagnetic electrode in magnetic tunnel junctions has been investigatedby measuring the tunneling magnetoresistance and the X<missing VAR>-ray magnetic circulardichroism (XMCD).
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, -16, '%', 1],[102.0, 2.8, 'K', 1]

C
###Negative tunneling magnetoresistance by canted magnetization in MgO/NiO tunnel barriers|Hyunsoo Yang,See-Hun Yang,Dong-Chen Qi,Andrivo Rusydi,Hiroyo Kawai,Mark Saeys,Titus Leo,David J. Smith,Stuart S. P. Parkin###
(281834, 281834)
 The influence of insertion of an ultra-thin NiO layer between the MgO barrierand ferromagnetic electrode in magnetic tunnel junctions has been investigatedby measuring the tunneling magnetoresistance and the X<missing VAR>-ray magnetic circulardichroism (XMCD).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, -16, '%', 1],[48.0, 2.8, 'K', 1]

NiO
###Negative tunneling magnetoresistance by canted magnetization in MgO/NiO tunnel barriers|Hyunsoo Yang,See-Hun Yang,Dong-Chen Qi,Andrivo Rusydi,Hiroyo Kawai,Mark Saeys,Titus Leo,David J. Smith,Stuart S. P. Parkin###
(281912, 281913)
 We attributethis to the formation of non-collinear spin structures in the NiO layer asobserved by XMCD<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, -16, '%', 1],[30.0, 2.8, 'K', 1]

C
###Negative tunneling magnetoresistance by canted magnetization in MgO/NiO tunnel barriers|Hyunsoo Yang,See-Hun Yang,Dong-Chen Qi,Andrivo Rusydi,Hiroyo Kawai,Mark Saeys,Titus Leo,David J. Smith,Stuart S. P. Parkin###
(281926, 281926)
 We attributethis to the formation of non-collinear spin structures in the NiO layer asobserved by XMCD<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, -16, '%', 1],[44.0, 2.8, 'K', 1]

Ni
###Negative tunneling magnetoresistance by canted magnetization in MgO/NiO tunnel barriers|Hyunsoo Yang,See-Hun Yang,Dong-Chen Qi,Andrivo Rusydi,Hiroyo Kawai,Mark Saeys,Titus Leo,David J. Smith,Stuart S. P. Parkin###
(281942, 281942)
 The magnetic moments of the interface Ni atoms tilt from theeasy axis due to exchange interaction and the tilting angle decreases withincreasing the NiO thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, -16, '%', 2],[60.0, 2.8, 'K', 2]

NiO
###Negative tunneling magnetoresistance by canted magnetization in MgO/NiO tunnel barriers|Hyunsoo Yang,See-Hun Yang,Dong-Chen Qi,Andrivo Rusydi,Hiroyo Kawai,Mark Saeys,Titus Leo,David J. Smith,Stuart S. P. Parkin###
(281982, 281983)
 The magnetic moments of the interface Ni atoms tilt from theeasy axis due to exchange interaction and the tilting angle decreases withincreasing the NiO thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, -16, '%', 2],[100.0, 2.8, 'K', 2]

In
###Unusual magnetoresistance in a topological insulator with a single ferromagnetic barrier|B. D. Kong,Y. G. Semenov,C. Krowne,K. W. Kim###
(282104, 282104)
 In contrast toconventional magnetoresistance devices that are sensitive to the relativealignment of two magnetic layers, a drastic change in the transmission currentis achieved by a single layer when its magnetization rotates by 90 degrees.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 90, 'degrees', 0],[117.0, 40, 'meV', 1]

Pr2Ir2O7
###Anisotropic hysteretic Hall-effect and magnetic control of chiral domains in the chiral spin states of Pr$_2$Ir$_2$O$_7$|L. Balicas,S. Nakatsuji,Y. Machida,S. Onoda###
(282331, 282336)
Anisotropic hysteretic Hall-effect and magnetic control of chiral domains in the chiral spin states of Pr2Ir2O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6363636363636364,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 1.5, 'K', 2]

H
###Anisotropic hysteretic Hall-effect and magnetic control of chiral domains in the chiral spin states of Pr$_2$Ir$_2$O$_7$|L. Balicas,S. Nakatsuji,Y. Machida,S. Onoda###
(282363, 282363)
 We uncover a strong anisotropy in both the anomalous Hall effect (AHE) andthe magnetoresistance of the chiral spin states of Pr2Ir2O7.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 1.5, 'K', 1]

Pr2Ir2O7
###Anisotropic hysteretic Hall-effect and magnetic control of chiral domains in the chiral spin states of Pr$_2$Ir$_2$O$_7$|L. Balicas,S. Nakatsuji,Y. Machida,S. Onoda###
(282386, 282391)
 We uncover a strong anisotropy in both the anomalous Hall effect (AHE) andthe magnetoresistance of the chiral spin states of Pr2Ir2O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6363636363636364,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 1.5, 'K', 1]

H
###Anisotropic hysteretic Hall-effect and magnetic control of chiral domains in the chiral spin states of Pr$_2$Ir$_2$O$_7$|L. Balicas,S. Nakatsuji,Y. Machida,S. Onoda###
(282397, 282397)
 The AHE<missing VAR>appearing below 1.5 K at zero magnetic field shows hysteresis which is mostpronounced for fields cycled along the [111] direction.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 1.5, 'K', 0]

B
###Magnetic-field-induced dimensional crossover in the organic metal $α$-(BEDT-TTF)$_{2}$KHg(SCN)$_{4}$|P. D. Grigoriev,M. V. Kartsovnik,W. Biberacher###
(282958, 282958)
Magnetic-field-induced dimensional crossover in the organic metal -(BEDT-TTF)2KHg(SCN)4.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Magnetic-field-induced dimensional crossover in the organic metal $α$-(BEDT-TTF)$_{2}$KHg(SCN)$_{4}$|P. D. Grigoriev,M. V. Kartsovnik,W. Biberacher###
(282965, 282965)
Magnetic-field-induced dimensional crossover in the organic metal -(BEDT-TTF)2KHg(SCN)4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

KHg(SCN)4
###Magnetic-field-induced dimensional crossover in the organic metal $α$-(BEDT-TTF)$_{2}$KHg(SCN)$_{4}$|P. D. Grigoriev,M. V. Kartsovnik,W. Biberacher###
(282968, 282975)
Magnetic-field-induced dimensional crossover in the organic metal -(BEDT-TTF)2KHg(SCN)4.
Featurization terminated normally.
0,0,0,0,0,0.2857142857142857,0.2857142857142857,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0.07142857142857142,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07142857142857142,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Magnetic-field-induced dimensional crossover in the organic metal $α$-(BEDT-TTF)$_{2}$KHg(SCN)$_{4}$|P. D. Grigoriev,M. V. Kartsovnik,W. Biberacher###
(283018, 283018)
 The field dependence of interlayer magnetoresistance of the pressurized (tothe normal state) layered organic metal alpha-(BEDT-TTF)2KHg(SCN)4 is investigated.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Magnetic-field-induced dimensional crossover in the organic metal $α$-(BEDT-TTF)$_{2}$KHg(SCN)$_{4}$|P. D. Grigoriev,M. V. Kartsovnik,W. Biberacher###
(283025, 283025)
 The field dependence of interlayer magnetoresistance of the pressurized (tothe normal state) layered organic metal alpha-(BEDT-TTF)2KHg(SCN)4 is investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

KHg(SCN)4
###Magnetic-field-induced dimensional crossover in the organic metal $α$-(BEDT-TTF)$_{2}$KHg(SCN)$_{4}$|P. D. Grigoriev,M. V. Kartsovnik,W. Biberacher###
(283028, 283035)
 The field dependence of interlayer magnetoresistance of the pressurized (tothe normal state) layered organic metal alpha-(BEDT-TTF)2KHg(SCN)4 is investigated.
Featurization terminated normally.
0,0,0,0,0,0.2857142857142857,0.2857142857142857,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0.07142857142857142,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07142857142857142,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs/AlGaAs
###Colossal non-saturating linear magnetoresistance in two-dimensional electron systems at a GaAs/AlGaAs heterointerface|M. A. Aamir,Srijit Goswami,Matthias Baenninger,Vikram Tripathi,Michael Pepper,Ian Farrer,David A. Ritchie,Arindam Ghosh###
(283625, 283630)
Colossal non-saturating linear magnetoresistance in two-dimensional electron systems at a GaAs/AlGaAs heterointerface.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[172.0, 10, ',', 3],[174.0, 0, '%', 3],[178.0, 8, 'Tesla', 3]

N
###Colossal non-saturating linear magnetoresistance in two-dimensional electron systems at a GaAs/AlGaAs heterointerface|M. A. Aamir,Srijit Goswami,Matthias Baenninger,Vikram Tripathi,Michael Pepper,Ian Farrer,David A. Ritchie,Arindam Ghosh###
(283714, 283714)
 We show that a colossal non-saturating linearmagnetoresistance (NLMR) arises in two-dimensional electron systems hosted in aGaAs/AlGaAs heterostructure in the strongly insulating regime.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 10, ',', 1],[90.0, 0, '%', 1],[94.0, 8, 'Tesla', 1]

GaAs/AlGaAs
###Colossal non-saturating linear magnetoresistance in two-dimensional electron systems at a GaAs/AlGaAs heterointerface|M. A. Aamir,Srijit Goswami,Matthias Baenninger,Vikram Tripathi,Michael Pepper,Ian Farrer,David A. Ritchie,Arindam Ghosh###
(283739, 283744)
 We show that a colossal non-saturating linearmagnetoresistance (NLMR) arises in two-dimensional electron systems hosted in aGaAs/AlGaAs heterostructure in the strongly insulating regime.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[58.0, 10, ',', 1],[60.0, 0, '%', 1],[64.0, 8, 'Tesla', 1]

N
###Colossal non-saturating linear magnetoresistance in two-dimensional electron systems at a GaAs/AlGaAs heterointerface|M. A. Aamir,Srijit Goswami,Matthias Baenninger,Vikram Tripathi,Michael Pepper,Ian Farrer,David A. Ritchie,Arindam Ghosh###
(283832, 283832)
 When operated athigh source-drain bias, the magnetoresistance of our devices increases almostlinearly with magnetic field reaching nearly 10,000% at 8 Tesla, thussurpassing many known non-magnetic materials that exhibit giant NLMR.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 10, ',', 0],[28.0, 0, '%', 0],[24.0, 8, 'Tesla', 0]

N
###Colossal non-saturating linear magnetoresistance in two-dimensional electron systems at a GaAs/AlGaAs heterointerface|M. A. Aamir,Srijit Goswami,Matthias Baenninger,Vikram Tripathi,Michael Pepper,Ian Farrer,David A. Ritchie,Arindam Ghosh###
(283857, 283857)
 Thetemperature dependence and mobility analysis indicate that the NLMR has apurely classical origin, driven by nanoscale inhomogeneities.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 10, ',', 1],[53.0, 0, '%', 1],[49.0, 8, 'Tesla', 1]

N
###Colossal non-saturating linear magnetoresistance in two-dimensional electron systems at a GaAs/AlGaAs heterointerface|M. A. Aamir,Srijit Goswami,Matthias Baenninger,Vikram Tripathi,Michael Pepper,Ian Farrer,David A. Ritchie,Arindam Ghosh###
(283887, 283887)
 A large NLMRcombined with small device dimensions makes these systems a new and attractivecandidate for on-chip magnetic field sensing.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 10, ',', 2],[83.0, 0, '%', 2],[79.0, 8, 'Tesla', 2]

Nb
###Vortex kinks in superconducting films with periodically modulated thickness|Jorge I. Facio,Anabella Abate,J. Guimpel,Pablo S. Cornaglia###
(283970, 283970)
 We report magnetoresistance measurements through Nb films having a periodicthickness modulation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Vortex kinks in superconducting films with periodically modulated thickness|Jorge I. Facio,Anabella Abate,J. Guimpel,Pablo S. Cornaglia###
(284082, 284082)
 For low driving currents along one of the axes of thesquare lattice, the resistivity rho increases monotonously with increasingmagnetic field B and the rho--B characteristics are approximatelypiecewise linear.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Vortex kinks in superconducting films with periodically modulated thickness|Jorge I. Facio,Anabella Abate,J. Guimpel,Pablo S. Cornaglia###
(284091, 284091)
 For low driving currents along one of the axes of thesquare lattice, the resistivity rho increases monotonously with increasingmagnetic field B and the rho--B characteristics are approximatelypiecewise linear.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Vortex kinks in superconducting films with periodically modulated thickness|Jorge I. Facio,Anabella Abate,J. Guimpel,Pablo S. Cornaglia###
(284113, 284113)
 The linear rho vs B segments change their slope atmatching fields where the number of vortices is an integer or a half integertimes the number of protruding cylinders in the sample.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Linear polarization dependence of microwave-induced magnetoresistance oscillations in high-mobility two-dimensional systems|X. L. Lei,S. Y. Liu###
(284385, 284385)
 At an extremumthe amplitude of oscillatory magnetoresistance R<missing VAR>xx exhibits a sinusoidal,up to a factor of 5, magnitude variation with rotating the polarization angletheta.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 5, ',', 0],[99.0, 2, 'D', 1],[168.0, 84, ',', 5],[202.0, 85, ',', 8]

B
###Linear polarization dependence of microwave-induced magnetoresistance oscillations in high-mobility two-dimensional systems|X. L. Lei,S. Y. Liu###
(284549, 284549)
 B bf 84, 085308 (2011)], and Ramanayaka it et al.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 5, ',', 5],[65.0, 2, 'D', 4],[4.0, 84, ',', 0],[38.0, 85, ',', 3]

B
###Linear polarization dependence of microwave-induced magnetoresistance oscillations in high-mobility two-dimensional systems|X. L. Lei,S. Y. Liu###
(284583, 284583)
B bf 85, 205315 (2012)].
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 5, ',', 8],[99.0, 2, 'D', 7],[30.0, 84, ',', 3],[4.0, 85, ',', 0]

HOP
###Scaling of Non-Saturating MR and quantum oscillations in pristine and ion-implanted HOPG|Nicholas Cornell,M. B. Salamon,A. Zakhidov###
(284633, 284635)
Scaling of Non-Saturating MR and quantum oscillations in pristine and ion-implanted HOPG<missing VAR>.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[284.0, 2, 'D', 6]

HOP
###Scaling of Non-Saturating MR and quantum oscillations in pristine and ion-implanted HOPG|Nicholas Cornell,M. B. Salamon,A. Zakhidov###
(284688, 284690)
 A wide variety of resistive and field dependent behaviors have beenpreviously observed in both doped and non-doped Highly Oriented PyrolyticGraphite (HOPG).
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[229.0, 2, 'D', 5]

HOP
###Scaling of Non-Saturating MR and quantum oscillations in pristine and ion-implanted HOPG|Nicholas Cornell,M. B. Salamon,A. Zakhidov###
(284699, 284701)
 We find HOPG<missing VAR> samples to vary significantly in theirtemperature dependent resistances, even between portions taken from the samesample, yet they exhibit consistent non-saturating magnetoresistance (MR).
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[218.0, 2, 'D', 4]

In
###Scaling of Non-Saturating MR and quantum oscillations in pristine and ion-implanted HOPG|Nicholas Cornell,M. B. Salamon,A. Zakhidov###
(284810, 284810)
 In addition to the large, field-linearMR, all samples exhibit Shubnikov-de Haas (SdH) oscillations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 2, 'D', 2]

H
###Scaling of Non-Saturating MR and quantum oscillations in pristine and ion-implanted HOPG|Nicholas Cornell,M. B. Salamon,A. Zakhidov###
(284844, 284844)
 In addition to the large, field-linearMR, all samples exhibit Shubnikov-de Haas (SdH) oscillations.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 2, 'D', 2]

H
###Scaling of Non-Saturating MR and quantum oscillations in pristine and ion-implanted HOPG|Nicholas Cornell,M. B. Salamon,A. Zakhidov###
(284912, 284912)
 Analysis of the SdH data gives a 2D carrier density in agreement withprevious results, and a large mean-free path relative to crystallite size, evenin samples with thin ion-implanted surface layers.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 2, 'D', 0]

S
###Theory of spin Hall magnetoresistance|Yan-Ting Chen,Saburo Takahashi,Hiroyasu Nakayama,Matthias Althammer,Sebastian T. B. Goennenwein,Eiji Saitoh,Gerrit E. W. Bauer###
(285016, 285016)
 We present a theory of the spin Hall magnetoresistance (SMR) in multilayersmade from an insulating ferromagnet F, such as yttrium iron garnet (YIG), and anormal metal N with spin-orbit interactions, such as platinum (Pt).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Theory of spin Hall magnetoresistance|Yan-Ting Chen,Saburo Takahashi,Hiroyasu Nakayama,Matthias Althammer,Sebastian T. B. Goennenwein,Eiji Saitoh,Gerrit E. W. Bauer###
(285036, 285036)
 We present a theory of the spin Hall magnetoresistance (SMR) in multilayersmade from an insulating ferromagnet F, such as yttrium iron garnet (YIG), and anormal metal N with spin-orbit interactions, such as platinum (Pt).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YI
###Theory of spin Hall magnetoresistance|Yan-Ting Chen,Saburo Takahashi,Hiroyasu Nakayama,Matthias Althammer,Sebastian T. B. Goennenwein,Eiji Saitoh,Gerrit E. W. Bauer###
(285050, 285051)
 We present a theory of the spin Hall magnetoresistance (SMR) in multilayersmade from an insulating ferromagnet F, such as yttrium iron garnet (YIG), and anormal metal N with spin-orbit interactions, such as platinum (Pt).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Theory of spin Hall magnetoresistance|Yan-Ting Chen,Saburo Takahashi,Hiroyasu Nakayama,Matthias Althammer,Sebastian T. B. Goennenwein,Eiji Saitoh,Gerrit E. W. Bauer###
(285065, 285065)
 We present a theory of the spin Hall magnetoresistance (SMR) in multilayersmade from an insulating ferromagnet F, such as yttrium iron garnet (YIG), and anormal metal N with spin-orbit interactions, such as platinum (Pt).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(Pt)
###Theory of spin Hall magnetoresistance|Yan-Ting Chen,Saburo Takahashi,Hiroyasu Nakayama,Matthias Althammer,Sebastian T. B. Goennenwein,Eiji Saitoh,Gerrit E. W. Bauer###
(285082, 285084)
 We present a theory of the spin Hall magnetoresistance (SMR) in multilayersmade from an insulating ferromagnet F, such as yttrium iron garnet (YIG), and anormal metal N with spin-orbit interactions, such as platinum (Pt).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Theory of spin Hall magnetoresistance|Yan-Ting Chen,Saburo Takahashi,Hiroyasu Nakayama,Matthias Althammer,Sebastian T. B. Goennenwein,Eiji Saitoh,Gerrit E. W. Bauer###
(285089, 285089)
 The SMR isinduced by the simultaneous action of spin Hall and inverse spin Hall effectsand therefore a non-equilibrium proximity phenomenon.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Theory of spin Hall magnetoresistance|Yan-Ting Chen,Saburo Takahashi,Hiroyasu Nakayama,Matthias Althammer,Sebastian T. B. Goennenwein,Eiji Saitoh,Gerrit E. W. Bauer###
(285144, 285144)
 We compute the SMR inFN and FNF layered systems, treating N by spin-diffusion theory withquantum mechanical boundary conditions at the interfaces in terms of thespin-mixing conductance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FN
###Theory of spin Hall magnetoresistance|Yan-Ting Chen,Saburo Takahashi,Hiroyasu Nakayama,Matthias Althammer,Sebastian T. B. Goennenwein,Eiji Saitoh,Gerrit E. W. Bauer###
(285151, 285152)
 We compute the SMR inFN and FNF layered systems, treating N by spin-diffusion theory withquantum mechanical boundary conditions at the interfaces in terms of thespin-mixing conductance.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FNF
###Theory of spin Hall magnetoresistance|Yan-Ting Chen,Saburo Takahashi,Hiroyasu Nakayama,Matthias Althammer,Sebastian T. B. Goennenwein,Eiji Saitoh,Gerrit E. W. Bauer###
(285156, 285158)
 We compute the SMR inFN and FNF layered systems, treating N by spin-diffusion theory withquantum mechanical boundary conditions at the interfaces in terms of thespin-mixing conductance.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Theory of spin Hall magnetoresistance|Yan-Ting Chen,Saburo Takahashi,Hiroyasu Nakayama,Matthias Althammer,Sebastian T. B. Goennenwein,Eiji Saitoh,Gerrit E. W. Bauer###
(285167, 285167)
 We compute the SMR inFN and FNF layered systems, treating N by spin-diffusion theory withquantum mechanical boundary conditions at the interfaces in terms of thespin-mixing conductance.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NF
###Theory of spin Hall magnetoresistance|Yan-Ting Chen,Saburo Takahashi,Hiroyasu Nakayama,Matthias Althammer,Sebastian T. B. Goennenwein,Eiji Saitoh,Gerrit E. W. Bauer###
(285231, 285232)
 Our results explain the experimentally observed spinHall magnetoresistance in NF bilayers.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FNF
###Theory of spin Hall magnetoresistance|Yan-Ting Chen,Saburo Takahashi,Hiroyasu Nakayama,Matthias Althammer,Sebastian T. B. Goennenwein,Eiji Saitoh,Gerrit E. W. Bauer###
(285239, 285241)
 For FNF spin valves we predictan enhanced SMR amplitude when magnetizations are collinear.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Theory of spin Hall magnetoresistance|Yan-Ting Chen,Saburo Takahashi,Hiroyasu Nakayama,Matthias Althammer,Sebastian T. B. Goennenwein,Eiji Saitoh,Gerrit E. W. Bauer###
(285256, 285256)
 For FNF spin valves we predictan enhanced SMR amplitude when magnetizations are collinear.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Theory of spin Hall magnetoresistance|Yan-Ting Chen,Saburo Takahashi,Hiroyasu Nakayama,Matthias Althammer,Sebastian T. B. Goennenwein,Eiji Saitoh,Gerrit E. W. Bauer###
(285273, 285273)
 The SMR and thespin-transfer torques in these trilayers can be controlled by the magneticconfiguration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YI
###Comparative Measurements of Inverse Spin Hall and Magnetoresistance in YIG|Pt and YIG|Ta|Christian Hahn,Grégoire De Loubens,Olivier Klein,Michel Viret,Vladimir V. Naletov,J. Ben Youssef###
(285336, 285337)
Comparative Measurements of Inverse Spin Hall and Magnetoresistance in YIG<missing VAR>Pt and YIG<missing VAR>Ta.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Comparative Measurements of Inverse Spin Hall and Magnetoresistance in YIG|Pt and YIG|Ta|Christian Hahn,Grégoire De Loubens,Olivier Klein,Michel Viret,Vladimir V. Naletov,J. Ben Youssef###
(285339, 285339)
Comparative Measurements of Inverse Spin Hall and Magnetoresistance in YIG<missing VAR>Pt and YIG<missing VAR>Ta.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YI
###Comparative Measurements of Inverse Spin Hall and Magnetoresistance in YIG|Pt and YIG|Ta|Christian Hahn,Grégoire De Loubens,Olivier Klein,Michel Viret,Vladimir V. Naletov,J. Ben Youssef###
(285343, 285344)
Comparative Measurements of Inverse Spin Hall and Magnetoresistance in YIG<missing VAR>Pt and YIG<missing VAR>Ta.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ta
###Comparative Measurements of Inverse Spin Hall and Magnetoresistance in YIG|Pt and YIG|Ta|Christian Hahn,Grégoire De Loubens,Olivier Klein,Michel Viret,Vladimir V. Naletov,J. Ben Youssef###
(285346, 285346)
Comparative Measurements of Inverse Spin Hall and Magnetoresistance in YIG<missing VAR>Pt and YIG<missing VAR>Ta.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YI
###Comparative Measurements of Inverse Spin Hall and Magnetoresistance in YIG|Pt and YIG|Ta|Christian Hahn,Grégoire De Loubens,Olivier Klein,Michel Viret,Vladimir V. Naletov,J. Ben Youssef###
(285378, 285379)
 We report on a comparative study of spin Hall related effects andmagnetoresistance in YIG<missing VAR>Pt and YIG<missing VAR>Ta bilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Comparative Measurements of Inverse Spin Hall and Magnetoresistance in YIG|Pt and YIG|Ta|Christian Hahn,Grégoire De Loubens,Olivier Klein,Michel Viret,Vladimir V. Naletov,J. Ben Youssef###
(285381, 285381)
 We report on a comparative study of spin Hall related effects andmagnetoresistance in YIG<missing VAR>Pt and YIG<missing VAR>Ta bilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YI
###Comparative Measurements of Inverse Spin Hall and Magnetoresistance in YIG|Pt and YIG|Ta|Christian Hahn,Grégoire De Loubens,Olivier Klein,Michel Viret,Vladimir V. Naletov,J. Ben Youssef###
(285385, 285386)
 We report on a comparative study of spin Hall related effects andmagnetoresistance in YIG<missing VAR>Pt and YIG<missing VAR>Ta bilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ta
###Comparative Measurements of Inverse Spin Hall and Magnetoresistance in YIG|Pt and YIG|Ta|Christian Hahn,Grégoire De Loubens,Olivier Klein,Michel Viret,Vladimir V. Naletov,J. Ben Youssef###
(285388, 285388)
 We report on a comparative study of spin Hall related effects andmagnetoresistance in YIG<missing VAR>Pt and YIG<missing VAR>Ta bilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Comparative Measurements of Inverse Spin Hall and Magnetoresistance in YIG|Pt and YIG|Ta|Christian Hahn,Grégoire De Loubens,Olivier Klein,Michel Viret,Vladimir V. Naletov,J. Ben Youssef###
(285418, 285418)
 These combined measurementsallow to estimate the characteristic transport parameters of both Pt and Talayers juxtaposed to YIG<missing VAR> the spin mixing conductance G<missing VAR>uparrow downarrowat the YIG<missing VAR>normal metal interface, the spin Hall angle ThetaSH, and thespin diffusion length lambdasd in the normal metal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ta
###Comparative Measurements of Inverse Spin Hall and Magnetoresistance in YIG|Pt and YIG|Ta|Christian Hahn,Grégoire De Loubens,Olivier Klein,Michel Viret,Vladimir V. Naletov,J. Ben Youssef###
(285422, 285422)
 These combined measurementsallow to estimate the characteristic transport parameters of both Pt and Talayers juxtaposed to YIG<missing VAR> the spin mixing conductance G<missing VAR>uparrow downarrowat the YIG<missing VAR>normal metal interface, the spin Hall angle ThetaSH, and thespin diffusion length lambdasd in the normal metal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YI
###Comparative Measurements of Inverse Spin Hall and Magnetoresistance in YIG|Pt and YIG|Ta|Christian Hahn,Grégoire De Loubens,Olivier Klein,Michel Viret,Vladimir V. Naletov,J. Ben Youssef###
(285431, 285432)
 These combined measurementsallow to estimate the characteristic transport parameters of both Pt and Talayers juxtaposed to YIG<missing VAR> the spin mixing conductance G<missing VAR>uparrow downarrowat the YIG<missing VAR>normal metal interface, the spin Hall angle ThetaSH, and thespin diffusion length lambdasd in the normal metal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YI
###Comparative Measurements of Inverse Spin Hall and Magnetoresistance in YIG|Pt and YIG|Ta|Christian Hahn,Grégoire De Loubens,Olivier Klein,Michel Viret,Vladimir V. Naletov,J. Ben Youssef###
(285453, 285454)
 These combined measurementsallow to estimate the characteristic transport parameters of both Pt and Talayers juxtaposed to YIG<missing VAR> the spin mixing conductance G<missing VAR>uparrow downarrowat the YIG<missing VAR>normal metal interface, the spin Hall angle ThetaSH, and thespin diffusion length lambdasd in the normal metal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SH
###Comparative Measurements of Inverse Spin Hall and Magnetoresistance in YIG|Pt and YIG|Ta|Christian Hahn,Grégoire De Loubens,Olivier Klein,Michel Viret,Vladimir V. Naletov,J. Ben Youssef###
(285472, 285473)
 These combined measurementsallow to estimate the characteristic transport parameters of both Pt and Talayers juxtaposed to YIG<missing VAR> the spin mixing conductance G<missing VAR>uparrow downarrowat the YIG<missing VAR>normal metal interface, the spin Hall angle ThetaSH, and thespin diffusion length lambdasd in the normal metal.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Comparative Measurements of Inverse Spin Hall and Magnetoresistance in YIG|Pt and YIG|Ta|Christian Hahn,Grégoire De Loubens,Olivier Klein,Michel Viret,Vladimir V. Naletov,J. Ben Youssef###
(285514, 285514)
 The inverse spin Hallvoltages generated in Pt and Ta by the pure spin current pumped from YIG<missing VAR>excited at resonance confirm the opposite signs of spin Hall angles in thesetwo materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ta
###Comparative Measurements of Inverse Spin Hall and Magnetoresistance in YIG|Pt and YIG|Ta|Christian Hahn,Grégoire De Loubens,Olivier Klein,Michel Viret,Vladimir V. Naletov,J. Ben Youssef###
(285518, 285518)
 The inverse spin Hallvoltages generated in Pt and Ta by the pure spin current pumped from YIG<missing VAR>excited at resonance confirm the opposite signs of spin Hall angles in thesetwo materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YI
###Comparative Measurements of Inverse Spin Hall and Magnetoresistance in YIG|Pt and YIG|Ta|Christian Hahn,Grégoire De Loubens,Olivier Klein,Michel Viret,Vladimir V. Naletov,J. Ben Youssef###
(285534, 285535)
 The inverse spin Hallvoltages generated in Pt and Ta by the pure spin current pumped from YIG<missing VAR>excited at resonance confirm the opposite signs of spin Hall angles in thesetwo materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ta
###Comparative Measurements of Inverse Spin Hall and Magnetoresistance in YIG|Pt and YIG|Ta|Christian Hahn,Grégoire De Loubens,Olivier Klein,Michel Viret,Vladimir V. Naletov,J. Ben Youssef###
(285597, 285597)
 Moreover, from the dependence of the inverse spin Hall voltageon the Ta thickness, we extract the spin diffusion length in Ta, found to belambdasdtextTa1.8pm0.7 nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ta
###Comparative Measurements of Inverse Spin Hall and Magnetoresistance in YIG|Pt and YIG|Ta|Christian Hahn,Grégoire De Loubens,Olivier Klein,Michel Viret,Vladimir V. Naletov,J. Ben Youssef###
(285616, 285616)
 Moreover, from the dependence of the inverse spin Hall voltageon the Ta thickness, we extract the spin diffusion length in Ta, found to belambdasdtextTa1.8pm0.7 nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ta1.8
###Comparative Measurements of Inverse Spin Hall and Magnetoresistance in YIG|Pt and YIG|Ta|Christian Hahn,Grégoire De Loubens,Olivier Klein,Michel Viret,Vladimir V. Naletov,J. Ben Youssef###
(285629, 285630)
 Moreover, from the dependence of the inverse spin Hall voltageon the Ta thickness, we extract the spin diffusion length in Ta, found to belambdasdtextTa1.8pm0.7 nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YI
###Comparative Measurements of Inverse Spin Hall and Magnetoresistance in YIG|Pt and YIG|Ta|Christian Hahn,Grégoire De Loubens,Olivier Klein,Michel Viret,Vladimir V. Naletov,J. Ben Youssef###
(285641, 285642)
 Both the YIG<missing VAR>Pt and YIG<missing VAR>Ta systemsdisplay a similar variation of resistance upon magnetic field orientation,which can be explained in the recently developed framework of spin Hallmagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Comparative Measurements of Inverse Spin Hall and Magnetoresistance in YIG|Pt and YIG|Ta|Christian Hahn,Grégoire De Loubens,Olivier Klein,Michel Viret,Vladimir V. Naletov,J. Ben Youssef###
(285644, 285644)
 Both the YIG<missing VAR>Pt and YIG<missing VAR>Ta systemsdisplay a similar variation of resistance upon magnetic field orientation,which can be explained in the recently developed framework of spin Hallmagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YI
###Comparative Measurements of Inverse Spin Hall and Magnetoresistance in YIG|Pt and YIG|Ta|Christian Hahn,Grégoire De Loubens,Olivier Klein,Michel Viret,Vladimir V. Naletov,J. Ben Youssef###
(285648, 285649)
 Both the YIG<missing VAR>Pt and YIG<missing VAR>Ta systemsdisplay a similar variation of resistance upon magnetic field orientation,which can be explained in the recently developed framework of spin Hallmagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ta
###Comparative Measurements of Inverse Spin Hall and Magnetoresistance in YIG|Pt and YIG|Ta|Christian Hahn,Grégoire De Loubens,Olivier Klein,Michel Viret,Vladimir V. Naletov,J. Ben Youssef###
(285651, 285651)
 Both the YIG<missing VAR>Pt and YIG<missing VAR>Ta systemsdisplay a similar variation of resistance upon magnetic field orientation,which can be explained in the recently developed framework of spin Hallmagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Nonlinear magnetotransport in a dc-current-biased graphene|C. M. Wang,X. L. Lei###
(286110, 286110)
 In the presence of surface opticalphonons, a second phase inversion may occur at higher dc bias, due to thereduced influence of electron-heating and the enhanced direct effect of currenton differential magnetoresistivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 20, ',', 2]

Ag5Pb2O6
###Transport properties of Ag5Pb2O6: a three-dimensional electron-gas-like system with low-carrier-density|Shingo Yonezawa,Yoshiteru Maeno###
(286315, 286320)
Transport properties of Ag5Pb2O6 a three-dimensional electron-gas-like system with low-carrier-density.
Featurization terminated normally.
0,0,0,0,0,0,0,0.46153846153846156,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.38461538461538464,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15384615384615385,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, -3, ',', 2]

Ag5Pb2O6
###Transport properties of Ag5Pb2O6: a three-dimensional electron-gas-like system with low-carrier-density|Shingo Yonezawa,Yoshiteru Maeno###
(286380, 286385)
 We report normal-state transport properties of the single-crystalline samplesof the silver-lead oxide superconductor Ag5Pb2O6, including the electricalresistivity, magnetoresistance, and Hall coefficient.
Featurization terminated normally.
0,0,0,0,0,0,0,0.46153846153846156,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.38461538461538464,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15384615384615385,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, -3, ',', 1]

Ag5Pb2O6
###Transport properties of Ag5Pb2O6: a three-dimensional electron-gas-like system with low-carrier-density|Shingo Yonezawa,Yoshiteru Maeno###
(286593, 286598)
 The present results provide evidence that Ag5Pb2O6 is alow-carrier-density three-dimensional electron-gas-like system with enhancedelectron-electron scatterings.
Featurization terminated normally.
0,0,0,0,0,0,0,0.46153846153846156,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.38461538461538464,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15384615384615385,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, -3, ',', 3]

B
###Magnetic quantum oscillations in the charge-density-wave state of the organic metals $α$-(BEDT-TTF)$_2$MHg(SCN)$_4$ with M = K and Tl|M. V. Kartsovnik,V. N. Zverev,D. Andres,W. Biberacher,T. Helm,P. D. Grigoriev,R. Ramazashvili,N. D. Kushch,H. Müller###
(286671, 286671)
Magnetic quantum oscillations in the charge-density-wave state of the organic metals -(BEDT-TTF)2M<missing VAR>Hg(SCN)4 with M<missing VAR>  K and Tl.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Magnetic quantum oscillations in the charge-density-wave state of the organic metals $α$-(BEDT-TTF)$_2$MHg(SCN)$_4$ with M = K and Tl|M. V. Kartsovnik,V. N. Zverev,D. Andres,W. Biberacher,T. Helm,P. D. Grigoriev,R. Ramazashvili,N. D. Kushch,H. Müller###
(286678, 286678)
Magnetic quantum oscillations in the charge-density-wave state of the organic metals -(BEDT-TTF)2M<missing VAR>Hg(SCN)4 with M<missing VAR>  K and Tl.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Hg(SCN)4
###Magnetic quantum oscillations in the charge-density-wave state of the organic metals $α$-(BEDT-TTF)$_2$MHg(SCN)$_4$ with M = K and Tl|M. V. Kartsovnik,V. N. Zverev,D. Andres,W. Biberacher,T. Helm,P. D. Grigoriev,R. Ramazashvili,N. D. Kushch,H. Müller###
(286682, 286688)
Magnetic quantum oscillations in the charge-density-wave state of the organic metals -(BEDT-TTF)2M<missing VAR>Hg(SCN)4 with M<missing VAR>  K and Tl.
Featurization terminated normally.
0,0,0,0,0,0.3076923076923077,0.3076923076923077,0,0,0,0,0,0,0,0,0.3076923076923077,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Magnetic quantum oscillations in the charge-density-wave state of the organic metals $α$-(BEDT-TTF)$_2$MHg(SCN)$_4$ with M = K and Tl|M. V. Kartsovnik,V. N. Zverev,D. Andres,W. Biberacher,T. Helm,P. D. Grigoriev,R. Ramazashvili,N. D. Kushch,H. Müller###
(286695, 286695)
Magnetic quantum oscillations in the charge-density-wave state of the organic metals -(BEDT-TTF)2M<missing VAR>Hg(SCN)4 with M<missing VAR>  K and Tl.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tl
###Magnetic quantum oscillations in the charge-density-wave state of the organic metals $α$-(BEDT-TTF)$_2$MHg(SCN)$_4$ with M = K and Tl|M. V. Kartsovnik,V. N. Zverev,D. Andres,W. Biberacher,T. Helm,P. D. Grigoriev,R. Ramazashvili,N. D. Kushch,H. Müller###
(286699, 286699)
Magnetic quantum oscillations in the charge-density-wave state of the organic metals -(BEDT-TTF)2M<missing VAR>Hg(SCN)4 with M<missing VAR>  K and Tl.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Magnetic quantum oscillations in the charge-density-wave state of the organic metals $α$-(BEDT-TTF)$_2$MHg(SCN)$_4$ with M = K and Tl|M. V. Kartsovnik,V. N. Zverev,D. Andres,W. Biberacher,T. Helm,P. D. Grigoriev,R. Ramazashvili,N. D. Kushch,H. Müller###
(286715, 286715)
 The low-temperature charge-density-wave (CD<missing VAR>W) state in the layered organicmetals alpha -(BEDT-TTF)2M<missing VAR>Hg(SCN)4 has been studied by means of theShubnikov -- de Haas and de Haas -- van Alphen effects.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Magnetic quantum oscillations in the charge-density-wave state of the organic metals $α$-(BEDT-TTF)$_2$MHg(SCN)$_4$ with M = K and Tl|M. V. Kartsovnik,V. N. Zverev,D. Andres,W. Biberacher,T. Helm,P. D. Grigoriev,R. Ramazashvili,N. D. Kushch,H. Müller###
(286717, 286717)
 The low-temperature charge-density-wave (CD<missing VAR>W) state in the layered organicmetals alpha -(BEDT-TTF)2M<missing VAR>Hg(SCN)4 has been studied by means of theShubnikov -- de Haas and de Haas -- van Alphen effects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Magnetic quantum oscillations in the charge-density-wave state of the organic metals $α$-(BEDT-TTF)$_2$MHg(SCN)$_4$ with M = K and Tl|M. V. Kartsovnik,V. N. Zverev,D. Andres,W. Biberacher,T. Helm,P. D. Grigoriev,R. Ramazashvili,N. D. Kushch,H. Müller###
(286737, 286737)
 The low-temperature charge-density-wave (CD<missing VAR>W) state in the layered organicmetals alpha -(BEDT-TTF)2M<missing VAR>Hg(SCN)4 has been studied by means of theShubnikov -- de Haas and de Haas -- van Alphen effects.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Magnetic quantum oscillations in the charge-density-wave state of the organic metals $α$-(BEDT-TTF)$_2$MHg(SCN)$_4$ with M = K and Tl|M. V. Kartsovnik,V. N. Zverev,D. Andres,W. Biberacher,T. Helm,P. D. Grigoriev,R. Ramazashvili,N. D. Kushch,H. Müller###
(286744, 286744)
 The low-temperature charge-density-wave (CD<missing VAR>W) state in the layered organicmetals alpha -(BEDT-TTF)2M<missing VAR>Hg(SCN)4 has been studied by means of theShubnikov -- de Haas and de Haas -- van Alphen effects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Hg(SCN)4
###Magnetic quantum oscillations in the charge-density-wave state of the organic metals $α$-(BEDT-TTF)$_2$MHg(SCN)$_4$ with M = K and Tl|M. V. Kartsovnik,V. N. Zverev,D. Andres,W. Biberacher,T. Helm,P. D. Grigoriev,R. Ramazashvili,N. D. Kushch,H. Müller###
(286748, 286754)
 The low-temperature charge-density-wave (CD<missing VAR>W) state in the layered organicmetals alpha -(BEDT-TTF)2M<missing VAR>Hg(SCN)4 has been studied by means of theShubnikov -- de Haas and de Haas -- van Alphen effects.
Featurization terminated normally.
0,0,0,0,0,0.3076923076923077,0.3076923076923077,0,0,0,0,0,0,0,0,0.3076923076923077,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magnetic quantum oscillations in the charge-density-wave state of the organic metals $α$-(BEDT-TTF)$_2$MHg(SCN)$_4$ with M = K and Tl|M. V. Kartsovnik,V. N. Zverev,D. Andres,W. Biberacher,T. Helm,P. D. Grigoriev,R. Ramazashvili,N. D. Kushch,H. Müller###
(286796, 286796)
 In addition to thedominant alpha-frequency, which is also observed in the normal state, both themagnetoresistance and magnetic torque possess a slowly oscillating component.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Magnetic quantum oscillations in the charge-density-wave state of the organic metals $α$-(BEDT-TTF)$_2$MHg(SCN)$_4$ with M = K and Tl|M. V. Kartsovnik,V. N. Zverev,D. Andres,W. Biberacher,T. Helm,P. D. Grigoriev,R. Ramazashvili,N. D. Kushch,H. Müller###
(286872, 286872)
These slow oscillations provide a firm evidence for the CD<missing VAR>W-inducedreconstruction of the original cylindrical Fermi surface.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Magnetic quantum oscillations in the charge-density-wave state of the organic metals $α$-(BEDT-TTF)$_2$MHg(SCN)$_4$ with M = K and Tl|M. V. Kartsovnik,V. N. Zverev,D. Andres,W. Biberacher,T. Helm,P. D. Grigoriev,R. Ramazashvili,N. D. Kushch,H. Müller###
(286874, 286874)
These slow oscillations provide a firm evidence for the CD<missing VAR>W-inducedreconstruction of the original cylindrical Fermi surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Magnetic quantum oscillations in the charge-density-wave state of the organic metals $α$-(BEDT-TTF)$_2$MHg(SCN)$_4$ with M = K and Tl|M. V. Kartsovnik,V. N. Zverev,D. Andres,W. Biberacher,T. Helm,P. D. Grigoriev,R. Ramazashvili,N. D. Kushch,H. Müller###
(286924, 286924)
 Thealpha-oscillations of the interlayer magnetoresistance exhibit an anomalousphase inversion in the CD<missing VAR>W state, whereas the de Haas -- van Alphen signalmaintains the normal phase.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Magnetic quantum oscillations in the charge-density-wave state of the organic metals $α$-(BEDT-TTF)$_2$MHg(SCN)$_4$ with M = K and Tl|M. V. Kartsovnik,V. N. Zverev,D. Andres,W. Biberacher,T. Helm,P. D. Grigoriev,R. Ramazashvili,N. D. Kushch,H. Müller###
(286926, 286926)
 Thealpha-oscillations of the interlayer magnetoresistance exhibit an anomalousphase inversion in the CD<missing VAR>W state, whereas the de Haas -- van Alphen signalmaintains the normal phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Magnetic quantum oscillations in the charge-density-wave state of the organic metals $α$-(BEDT-TTF)$_2$MHg(SCN)$_4$ with M = K and Tl|M. V. Kartsovnik,V. N. Zverev,D. Andres,W. Biberacher,T. Helm,P. D. Grigoriev,R. Ramazashvili,N. D. Kushch,H. Müller###
(286997, 286997)
 We argue that the anomaly may be attributed to themagnetic-breakdown origin of the alpha-oscillations in the CD<missing VAR>W state.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Magnetic quantum oscillations in the charge-density-wave state of the organic metals $α$-(BEDT-TTF)$_2$MHg(SCN)$_4$ with M = K and Tl|M. V. Kartsovnik,V. N. Zverev,D. Andres,W. Biberacher,T. Helm,P. D. Grigoriev,R. Ramazashvili,N. D. Kushch,H. Müller###
(286999, 286999)
 We argue that the anomaly may be attributed to themagnetic-breakdown origin of the alpha-oscillations in the CD<missing VAR>W state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaAlO3/SrTiO3
###Thermally excited multi-band conduction in LaAlO3/SrTiO3 heterostructures exhibiting magnetic scattering|V. K. Guduru,A. McCollam,A. Jost,S. Wenderich,H. Hilgenkamp,J. C. Maan,A. Brinkman,U. Zeitler###
(287082, 287090)
Thermally excited multi-band conduction in LaAlO3/SrTiO3 heterostructures exhibiting magnetic scattering.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[45.0, 26, 'unit', 1],[177.0, 6, 'meV', 3]

LaAlO3/SrTiO3
###Thermally excited multi-band conduction in LaAlO3/SrTiO3 heterostructures exhibiting magnetic scattering|V. K. Guduru,A. McCollam,A. Jost,S. Wenderich,H. Hilgenkamp,J. C. Maan,A. Brinkman,U. Zeitler###
(287122, 287130)
 Magnetotransport measurements of charge carriers at the interface of aLaAlO3/SrTiO3 heterostructure with 26 unit cells of LaAlO3 show Hall resistanceand magnetoresistance which at low and high temperatures is described by asingle channel of electron-like charge carriers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[5.0, 26, 'unit', 0],[137.0, 6, 'meV', 2]

LaAlO3
###Thermally excited multi-band conduction in LaAlO3/SrTiO3 heterostructures exhibiting magnetic scattering|V. K. Guduru,A. McCollam,A. Jost,S. Wenderich,H. Hilgenkamp,J. C. Maan,A. Brinkman,U. Zeitler###
(287141, 287144)
 Magnetotransport measurements of charge carriers at the interface of aLaAlO3/SrTiO3 heterostructure with 26 unit cells of LaAlO3 show Hall resistanceand magnetoresistance which at low and high temperatures is described by asingle channel of electron-like charge carriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 26, 'unit', 0],[123.0, 6, 'meV', 2]

At
###Thermally excited multi-band conduction in LaAlO3/SrTiO3 heterostructures exhibiting magnetic scattering|V. K. Guduru,A. McCollam,A. Jost,S. Wenderich,H. Hilgenkamp,J. C. Maan,A. Brinkman,U. Zeitler###
(287193, 287193)
 At intermediate temperatures,we observe non-linear Hall resistance and positive magnetoresistance,establishing the presence of at least two electron-like channels withsignificantly different mobilities and carrier concentrations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 26, 'unit', 1],[74.0, 6, 'meV', 1]

SiC
###Tuning of quantum interference in top-gated graphene on SiC|Andrea Iagallo,Shinichi Tanabe,Stefano Roddaro,Makoto Takamura,Hiroki Hibino,Stefan Heun###
(287384, 287385)
Tuning of quantum interference in top-gated graphene on SiC.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Tuning of quantum interference in top-gated graphene on SiC|Andrea Iagallo,Shinichi Tanabe,Stefano Roddaro,Makoto Takamura,Hiroki Hibino,Stefan Heun###
(287425, 287425)
 We report on quantum-interference measurements in top-gated Hall bars ofmonolayer graphene epitaxially grown on the Si face of SiC, in which thetransition from negative to positive magnetoresistance was achieved varyingtemperature and charge density.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SiC
###Tuning of quantum interference in top-gated graphene on SiC|Andrea Iagallo,Shinichi Tanabe,Stefano Roddaro,Makoto Takamura,Hiroki Hibino,Stefan Heun###
(287431, 287432)
 We report on quantum-interference measurements in top-gated Hall bars ofmonolayer graphene epitaxially grown on the Si face of SiC, in which thetransition from negative to positive magnetoresistance was achieved varyingtemperature and charge density.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SiC
###Tuning of quantum interference in top-gated graphene on SiC|Andrea Iagallo,Shinichi Tanabe,Stefano Roddaro,Makoto Takamura,Hiroki Hibino,Stefan Heun###
(287667, 287668)
 Our results clarify the role of quantum transport in SiC-based devices,which will be relevant in the development of a graphene-based technology forcoherent electronics.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###From spin-polarized interfaces to giant magnetoresistance in organic spin valves|Deniz Çakır,Diana M. Otálvaro,Geert Brocks###
(287821, 287821)
 The magnetoresistance of a Febilayer-C70Fe spin valve attains ahigh value of 70% in the linear response regime, but it drops sharply as afunction of the applied bias.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 70, '%', 0],[74.0, 80, '%', 1]

C70Fe
###From spin-polarized interfaces to giant magnetoresistance in organic spin valves|Deniz Çakır,Diana M. Otálvaro,Geert Brocks###
(287824, 287826)
 The magnetoresistance of a Febilayer-C70Fe spin valve attains ahigh value of 70% in the linear response regime, but it drops sharply as afunction of the applied bias.
Featurization terminated normally.
0,0,0,0,0,0.9859154929577465,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.014084507042253521,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 70, '%', 0],[69.0, 80, '%', 1]

FeC70
###From spin-polarized interfaces to giant magnetoresistance in organic spin valves|Deniz Çakır,Diana M. Otálvaro,Geert Brocks###
(287948, 287950)
 Both these trendscan be modelled in terms of prominent spin-dependent FeC70 interface statesclose to the Fermi level, unfolding the potential of spinterface science tocontrol and optimize spin currents.
Featurization terminated normally.
0,0,0,0,0,0.9859154929577465,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.014084507042253521,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 70, '%', 2],[53.0, 80, '%', 1]

MgO
###Half-metallic magnetism and the search for better spin valves|Karin Everschor-Sitte,Matthias Sitte,Allan H. MacDonald###
(288172, 288173)
 First we show that a mechanism in which spin valve performance atfinite temperatures is limited by uncorrelated thermal fluctuations ofmagnetization orientations on opposite sides of a tunnel junction is in goodagreement with recent studies of the temperature-dependent magnetoresistance ofhigh quality tunnel junctions with MgO barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Half-metallic magnetism and the search for better spin valves|Karin Everschor-Sitte,Matthias Sitte,Allan H. MacDonald###
(288298, 288299)
 We conclude that half-metallic ferromagnets can yield betterspin-value performance than current elemental transition metal ferromagnet/MgOsystems only if their ferromagnetic transition temperatures exceed sim950mathrmK.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Half-metallic magnetism and the search for better spin valves|Karin Everschor-Sitte,Matthias Sitte,Allan H. MacDonald###
(288323, 288323)
 We conclude that half-metallic ferromagnets can yield betterspin-value performance than current elemental transition metal ferromagnet/MgOsystems only if their ferromagnetic transition temperatures exceed sim950mathrmK.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pd
###Room temperature giant baroresistance and magnetoresistance and its tunability in Pd doped FeRh|Pallavi Kushwaha,Pallab Bag,R. Rawat###
(288354, 288354)
Room temperature giant baroresistance and magnetoresistance and its tunability in Pd doped FeRh.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 128, '%', 1],[78.0, 600, '%', 2],[82.0, 5, 'K', 2],[85.0, 19.9, 'kbar', 2],[88.0, 8, 'Tesla', 2],[98.0, -85, '%', 2],[103.0, 5, 'K', 2],[106.0, 8, 'tesla', 2],[116.0, 5, 'K', 2],[172.0, -55, '%', 3]

FeRh
###Room temperature giant baroresistance and magnetoresistance and its tunability in Pd doped FeRh|Pallavi Kushwaha,Pallab Bag,R. Rawat###
(288358, 288359)
Room temperature giant baroresistance and magnetoresistance and its tunability in Pd doped FeRh.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 128, '%', 1],[73.0, 600, '%', 2],[77.0, 5, 'K', 2],[80.0, 19.9, 'kbar', 2],[83.0, 8, 'Tesla', 2],[93.0, -85, '%', 2],[98.0, 5, 'K', 2],[101.0, 8, 'tesla', 2],[111.0, 5, 'K', 2],[167.0, -55, '%', 3]

Fe49(Rh0.93Pd0.07)51
###Room temperature giant baroresistance and magnetoresistance and its tunability in Pd doped FeRh|Pallavi Kushwaha,Pallab Bag,R. Rawat###
(288385, 288393)
 We report room temperature giant baro-resistance (approx128%) inFe49(Rh0.93Pd0.07)51.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.49,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4743,0.0357,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 128, '%', 0],[39.0, 600, '%', 1],[43.0, 5, 'K', 1],[46.0, 19.9, 'kbar', 1],[49.0, 8, 'Tesla', 1],[59.0, -85, '%', 1],[64.0, 5, 'K', 1],[67.0, 8, 'tesla', 1],[77.0, 5, 'K', 1],[133.0, -55, '%', 2]

As
###Room temperature giant baroresistance and magnetoresistance and its tunability in Pd doped FeRh|Pallavi Kushwaha,Pallab Bag,R. Rawat###
(288484, 288484)
 As the AFM<missing VAR> state is stabilized at room temperature under externalpressure, it shows giant room temperature magnetoresistance (approx-55%)with magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 128, '%', 2],[52.0, 600, '%', 1],[48.0, 5, 'K', 1],[45.0, 19.9, 'kbar', 1],[42.0, 8, 'Tesla', 1],[32.0, -85, '%', 1],[27.0, 5, 'K', 1],[24.0, 8, 'tesla', 1],[14.0, 5, 'K', 1],[42.0, -55, '%', 0]

F
###Room temperature giant baroresistance and magnetoresistance and its tunability in Pd doped FeRh|Pallavi Kushwaha,Pallab Bag,R. Rawat###
(288489, 288489)
 As the AFM<missing VAR> state is stabilized at room temperature under externalpressure, it shows giant room temperature magnetoresistance (approx-55%)with magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 128, '%', 2],[57.0, 600, '%', 1],[53.0, 5, 'K', 1],[50.0, 19.9, 'kbar', 1],[47.0, 8, 'Tesla', 1],[37.0, -85, '%', 1],[32.0, 5, 'K', 1],[29.0, 8, 'tesla', 1],[19.0, 5, 'K', 1],[37.0, -55, '%', 0]

H
###Room temperature giant baroresistance and magnetoresistance and its tunability in Pd doped FeRh|Pallavi Kushwaha,Pallab Bag,R. Rawat###
(288647, 288647)
 Due to coupled magnetic and latticel changes, theisothermal change in room temperature resistivity with pressure (in the absenceof applied magnetic field) as well as magnetic field (under various constantpressure) can be scaled together to a single curve when plotted as a functionof X<missing VAR>  T<missing VAR>  12.8H - 7.2P.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[269.0, 128, '%', 3],[215.0, 600, '%', 2],[211.0, 5, 'K', 2],[208.0, 19.9, 'kbar', 2],[205.0, 8, 'Tesla', 2],[195.0, -85, '%', 2],[190.0, 5, 'K', 2],[187.0, 8, 'tesla', 2],[177.0, 5, 'K', 2],[121.0, -55, '%', 1]

P
###Room temperature giant baroresistance and magnetoresistance and its tunability in Pd doped FeRh|Pallavi Kushwaha,Pallab Bag,R. Rawat###
(288652, 288652)
 Due to coupled magnetic and latticel changes, theisothermal change in room temperature resistivity with pressure (in the absenceof applied magnetic field) as well as magnetic field (under various constantpressure) can be scaled together to a single curve when plotted as a functionof X<missing VAR>  T<missing VAR>  12.8H - 7.2P.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[274.0, 128, '%', 3],[220.0, 600, '%', 2],[216.0, 5, 'K', 2],[213.0, 19.9, 'kbar', 2],[210.0, 8, 'Tesla', 2],[200.0, -85, '%', 2],[195.0, 5, 'K', 2],[192.0, 8, 'tesla', 2],[182.0, 5, 'K', 2],[126.0, -55, '%', 1]

SiN
###Spin-dependent ballistic transport properties and electronic structures of pristine and edge-doped zigzag silicene nanoribbons: large magnetoresistance|A. B. Chen,X. F. Wang,P. Vasilopoulos,M. X. Zhai,Y. S. Liu###
(288727, 288728)
 The electronic structure and conductance of substitutionally edge-dopedzigzag silicene nanoribbons (Z<missing VAR>SiNRs) are investigated using the nonequilibriumGreens<missing VAR> function method combined with the density functional theory.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SiN
###Spin-dependent ballistic transport properties and electronic structures of pristine and edge-doped zigzag silicene nanoribbons: large magnetoresistance|A. B. Chen,X. F. Wang,P. Vasilopoulos,M. X. Zhai,Y. S. Liu###
(288773, 288774)
 Two-probesystems of Z<missing VAR>SiNRs in both ferromagnetic and antiferromagnetic states areconsidered.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

III
###Spin-dependent ballistic transport properties and electronic structures of pristine and edge-doped zigzag silicene nanoribbons: large magnetoresistance|A. B. Chen,X. F. Wang,P. Vasilopoulos,M. X. Zhai,Y. S. Liu###
(288807, 288809)
 Doping effects of elements from groups III and V, in a parallel orantiparallel magnetic configuration of the two electrodes, are discussed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Spin-dependent ballistic transport properties and electronic structures of pristine and edge-doped zigzag silicene nanoribbons: large magnetoresistance|A. B. Chen,X. F. Wang,P. Vasilopoulos,M. X. Zhai,Y. S. Liu###
(288813, 288813)
 Doping effects of elements from groups III and V, in a parallel orantiparallel magnetic configuration of the two electrodes, are discussed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SiN
###Spin-dependent ballistic transport properties and electronic structures of pristine and edge-doped zigzag silicene nanoribbons: large magnetoresistance|A. B. Chen,X. F. Wang,P. Vasilopoulos,M. X. Zhai,Y. S. Liu###
(288877, 288878)
Switching on and off the external magnetic field, we may convert the metallicferromagnetic Z<missing VAR>SiNRs into insulating antiferromagnetic Z<missing VAR>SiNRs.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SiN
###Spin-dependent ballistic transport properties and electronic structures of pristine and edge-doped zigzag silicene nanoribbons: large magnetoresistance|A. B. Chen,X. F. Wang,P. Vasilopoulos,M. X. Zhai,Y. S. Liu###
(288888, 288889)
Switching on and off the external magnetic field, we may convert the metallicferromagnetic Z<missing VAR>SiNRs into insulating antiferromagnetic Z<missing VAR>SiNRs.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin-dependent ballistic transport properties and electronic structures of pristine and edge-doped zigzag silicene nanoribbons: large magnetoresistance|A. B. Chen,X. F. Wang,P. Vasilopoulos,M. X. Zhai,Y. S. Liu###
(288893, 288893)
 In theferromagnetic state, even- or odd-width Z<missing VAR>SiNRs exhibit a drastically differentmagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SiN
###Spin-dependent ballistic transport properties and electronic structures of pristine and edge-doped zigzag silicene nanoribbons: large magnetoresistance|A. B. Chen,X. F. Wang,P. Vasilopoulos,M. X. Zhai,Y. S. Liu###
(288913, 288914)
 In theferromagnetic state, even- or odd-width Z<missing VAR>SiNRs exhibit a drastically differentmagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin-dependent ballistic transport properties and electronic structures of pristine and edge-doped zigzag silicene nanoribbons: large magnetoresistance|A. B. Chen,X. F. Wang,P. Vasilopoulos,M. X. Zhai,Y. S. Liu###
(288929, 288929)
 In an odd-width edge-doped Z<missing VAR>SiNR<missing VAR> a large magnetoresistanceoccurs compared to that in a pristine Z<missing VAR>SiNR<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SiN
###Spin-dependent ballistic transport properties and electronic structures of pristine and edge-doped zigzag silicene nanoribbons: large magnetoresistance|A. B. Chen,X. F. Wang,P. Vasilopoulos,M. X. Zhai,Y. S. Liu###
(288942, 288943)
 In an odd-width edge-doped Z<missing VAR>SiNR<missing VAR> a large magnetoresistanceoccurs compared to that in a pristine Z<missing VAR>SiNR<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SiN
###Spin-dependent ballistic transport properties and electronic structures of pristine and edge-doped zigzag silicene nanoribbons: large magnetoresistance|A. B. Chen,X. F. Wang,P. Vasilopoulos,M. X. Zhai,Y. S. Liu###
(288968, 288969)
 In an odd-width edge-doped Z<missing VAR>SiNR<missing VAR> a large magnetoresistanceoccurs compared to that in a pristine Z<missing VAR>SiNR<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SiN
###Spin-dependent ballistic transport properties and electronic structures of pristine and edge-doped zigzag silicene nanoribbons: large magnetoresistance|A. B. Chen,X. F. Wang,P. Vasilopoulos,M. X. Zhai,Y. S. Liu###
(288989, 288990)
 The situation is reversed ineven-width Z<missing VAR>SiNRs.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SiN
###Vacancy Effects on Electric and Thermoelectric Properties of Zigzag Silicene Nanoribbons|R. L. An,X. F. Wang,P. Vasilopoulos,Y. S. Liu,A. B. Chen,Y. J. Dong,M. X. Zhai###
(289113, 289114)
 We study the crystal reconstruction in the presence of monovacancies (M<missing VAR>Vs),divacancies (D<missing VAR>Vs) and linear vacancies (L<missing VAR>Vs) in a zigzag silicene nanoribbon(Z<missing VAR>SiNR) with transversal symmetry.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Vacancy Effects on Electric and Thermoelectric Properties of Zigzag Silicene Nanoribbons|R. L. An,X. F. Wang,P. Vasilopoulos,Y. S. Liu,A. B. Chen,Y. J. Dong,M. X. Zhai###
(289171, 289171)
 In particular, we focus on the spinresolved conductance, magnetoresistance and current-voltage curves.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SiN
###Vacancy Effects on Electric and Thermoelectric Properties of Zigzag Silicene Nanoribbons|R. L. An,X. F. Wang,P. Vasilopoulos,Y. S. Liu,A. B. Chen,Y. J. Dong,M. X. Zhai###
(289398, 289399)
 A strong spin Seebeck effect isexpected at room temperature in Z<missing VAR>SiNRs with L<missing VAR>Vs.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Te2Se
###Experimental evidence and control of the bulk-mediated intersurface coupling in topological insulator Bi2Te2Se nanoribbons|Zhaoguo Li,Ion Garate,Jian Pan,Xiangang Wan,Taishi Chen,Wei Ning,Xiaoou Zhang,Fengqi Song,Yuze Meng,Xiaochen Hong,Xuefeng Wang,Li Pi,Xinran Wang,Baigeng Wang,Shiyan Li,Leonid Glazman,Guanghou Wang###
(289442, 289446)
Experimental evidence and control of the bulk-mediated intersurface coupling in topological insulator Bi2Te2Se nanoribbons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Experimental evidence and control of the bulk-mediated intersurface coupling in topological insulator Bi2Te2Se nanoribbons|Zhaoguo Li,Ion Garate,Jian Pan,Xiangang Wan,Taishi Chen,Wei Ning,Xiaoou Zhang,Fengqi Song,Yuze Meng,Xiaochen Hong,Xuefeng Wang,Li Pi,Xinran Wang,Baigeng Wang,Shiyan Li,Leonid Glazman,Guanghou Wang###
(289571, 289571)
 In this work, we present the first evidence for the existenceand control of bulk-surface coupling in Bi2Te2Se nanoribbons, which arepromising platforms for future T<missing VAR>I-based devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Te2Se
###Experimental evidence and control of the bulk-mediated intersurface coupling in topological insulator Bi2Te2Se nanoribbons|Zhaoguo Li,Ion Garate,Jian Pan,Xiangang Wan,Taishi Chen,Wei Ning,Xiaoou Zhang,Fengqi Song,Yuze Meng,Xiaochen Hong,Xuefeng Wang,Li Pi,Xinran Wang,Baigeng Wang,Shiyan Li,Leonid Glazman,Guanghou Wang###
(289609, 289613)
 In this work, we present the first evidence for the existenceand control of bulk-surface coupling in Bi2Te2Se nanoribbons, which arepromising platforms for future T<missing VAR>I-based devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Experimental evidence and control of the bulk-mediated intersurface coupling in topological insulator Bi2Te2Se nanoribbons|Zhaoguo Li,Ion Garate,Jian Pan,Xiangang Wan,Taishi Chen,Wei Ning,Xiaoou Zhang,Fengqi Song,Yuze Meng,Xiaochen Hong,Xuefeng Wang,Li Pi,Xinran Wang,Baigeng Wang,Shiyan Li,Leonid Glazman,Guanghou Wang###
(289632, 289632)
 In this work, we present the first evidence for the existenceand control of bulk-surface coupling in Bi2Te2Se nanoribbons, which arepromising platforms for future T<missing VAR>I-based devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr0.9K0.1Zn1.8Mn0.2As2
###Sr$_{0.9}$K$_{0.1}$Zn$_{1.8}$Mn$_{0.2}$As$_{2}$: a ferromagnetic semiconductor with colossal magnetoresistance|Xiaojun Yang,Qian Chen,Yupeng Li,Zhen Wang,Jinke Bao,Yuke Li,Qian Tao,Guanghan Cao,Zhu-An Xu###
(289819, 289828)
Sr0.9K0.1Zn1.8Mn0.2As2 a ferromagnetic semiconductor with colossal magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.02,0,0,0,0,0,0.04,0,0,0,0,0.36,0,0,0.4,0,0,0,0,0.18,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 12, 'K', 3],[160.0, 5, 'T', 3],[167.0, 2, 'K', 3],[209.0, -38, '%', 4],[237.0, -99.8, '%', 4],[247.0, 5, 'T', 4],[258.0, 2, 'K', 4]

Sr
###Sr$_{0.9}$K$_{0.1}$Zn$_{1.8}$Mn$_{0.2}$As$_{2}$: a ferromagnetic semiconductor with colossal magnetoresistance|Xiaojun Yang,Qian Chen,Yupeng Li,Zhen Wang,Jinke Bao,Yuke Li,Qian Tao,Guanghan Cao,Zhu-An Xu###
(289854, 289854)
 A bulk diluted magnetic semiconductor (Sr,K)(Zn,Mn)2As2 wassynthesized with decoupled charge and spin doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 12, 'K', 2],[134.0, 5, 'T', 2],[141.0, 2, 'K', 2],[183.0, -38, '%', 3],[211.0, -99.8, '%', 3],[221.0, 5, 'T', 3],[232.0, 2, 'K', 3]

K
###Sr$_{0.9}$K$_{0.1}$Zn$_{1.8}$Mn$_{0.2}$As$_{2}$: a ferromagnetic semiconductor with colossal magnetoresistance|Xiaojun Yang,Qian Chen,Yupeng Li,Zhen Wang,Jinke Bao,Yuke Li,Qian Tao,Guanghan Cao,Zhu-An Xu###
(289856, 289856)
 A bulk diluted magnetic semiconductor (Sr,K)(Zn,Mn)2As2 wassynthesized with decoupled charge and spin doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 12, 'K', 2],[132.0, 5, 'T', 2],[139.0, 2, 'K', 2],[181.0, -38, '%', 3],[209.0, -99.8, '%', 3],[219.0, 5, 'T', 3],[230.0, 2, 'K', 3]

Zn
###Sr$_{0.9}$K$_{0.1}$Zn$_{1.8}$Mn$_{0.2}$As$_{2}$: a ferromagnetic semiconductor with colossal magnetoresistance|Xiaojun Yang,Qian Chen,Yupeng Li,Zhen Wang,Jinke Bao,Yuke Li,Qian Tao,Guanghan Cao,Zhu-An Xu###
(289859, 289859)
 A bulk diluted magnetic semiconductor (Sr,K)(Zn,Mn)2As2 wassynthesized with decoupled charge and spin doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 12, 'K', 2],[129.0, 5, 'T', 2],[136.0, 2, 'K', 2],[178.0, -38, '%', 3],[206.0, -99.8, '%', 3],[216.0, 5, 'T', 3],[227.0, 2, 'K', 3]

Mn
###Sr$_{0.9}$K$_{0.1}$Zn$_{1.8}$Mn$_{0.2}$As$_{2}$: a ferromagnetic semiconductor with colossal magnetoresistance|Xiaojun Yang,Qian Chen,Yupeng Li,Zhen Wang,Jinke Bao,Yuke Li,Qian Tao,Guanghan Cao,Zhu-An Xu###
(289861, 289861)
 A bulk diluted magnetic semiconductor (Sr,K)(Zn,Mn)2As2 wassynthesized with decoupled charge and spin doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 12, 'K', 2],[127.0, 5, 'T', 2],[134.0, 2, 'K', 2],[176.0, -38, '%', 3],[204.0, -99.8, '%', 3],[214.0, 5, 'T', 3],[225.0, 2, 'K', 3]

As2
###Sr$_{0.9}$K$_{0.1}$Zn$_{1.8}$Mn$_{0.2}$As$_{2}$: a ferromagnetic semiconductor with colossal magnetoresistance|Xiaojun Yang,Qian Chen,Yupeng Li,Zhen Wang,Jinke Bao,Yuke Li,Qian Tao,Guanghan Cao,Zhu-An Xu###
(289864, 289865)
 A bulk diluted magnetic semiconductor (Sr,K)(Zn,Mn)2As2 wassynthesized with decoupled charge and spin doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 12, 'K', 2],[123.0, 5, 'T', 2],[130.0, 2, 'K', 2],[172.0, -38, '%', 3],[200.0, -99.8, '%', 3],[210.0, 5, 'T', 3],[221.0, 2, 'K', 3]

CaAl2Si2
###Sr$_{0.9}$K$_{0.1}$Zn$_{1.8}$Mn$_{0.2}$As$_{2}$: a ferromagnetic semiconductor with colossal magnetoresistance|Xiaojun Yang,Qian Chen,Yupeng Li,Zhen Wang,Jinke Bao,Yuke Li,Qian Tao,Guanghan Cao,Zhu-An Xu###
(289894, 289898)
 It has a hexagonalCaAl2Si2-type structure with the (Zn,Mn)2As2 layer forminga honeycomb-like network.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.4,0.4,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 12, 'K', 1],[90.0, 5, 'T', 1],[97.0, 2, 'K', 1],[139.0, -38, '%', 2],[167.0, -99.8, '%', 2],[177.0, 5, 'T', 2],[188.0, 2, 'K', 2]

Zn
###Sr$_{0.9}$K$_{0.1}$Zn$_{1.8}$Mn$_{0.2}$As$_{2}$: a ferromagnetic semiconductor with colossal magnetoresistance|Xiaojun Yang,Qian Chen,Yupeng Li,Zhen Wang,Jinke Bao,Yuke Li,Qian Tao,Guanghan Cao,Zhu-An Xu###
(289909, 289909)
 It has a hexagonalCaAl2Si2-type structure with the (Zn,Mn)2As2 layer forminga honeycomb-like network.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 12, 'K', 1],[79.0, 5, 'T', 1],[86.0, 2, 'K', 1],[128.0, -38, '%', 2],[156.0, -99.8, '%', 2],[166.0, 5, 'T', 2],[177.0, 2, 'K', 2]

Mn
###Sr$_{0.9}$K$_{0.1}$Zn$_{1.8}$Mn$_{0.2}$As$_{2}$: a ferromagnetic semiconductor with colossal magnetoresistance|Xiaojun Yang,Qian Chen,Yupeng Li,Zhen Wang,Jinke Bao,Yuke Li,Qian Tao,Guanghan Cao,Zhu-An Xu###
(289911, 289911)
 It has a hexagonalCaAl2Si2-type structure with the (Zn,Mn)2As2 layer forminga honeycomb-like network.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 12, 'K', 1],[77.0, 5, 'T', 1],[84.0, 2, 'K', 1],[126.0, -38, '%', 2],[154.0, -99.8, '%', 2],[164.0, 5, 'T', 2],[175.0, 2, 'K', 2]

As2
###Sr$_{0.9}$K$_{0.1}$Zn$_{1.8}$Mn$_{0.2}$As$_{2}$: a ferromagnetic semiconductor with colossal magnetoresistance|Xiaojun Yang,Qian Chen,Yupeng Li,Zhen Wang,Jinke Bao,Yuke Li,Qian Tao,Guanghan Cao,Zhu-An Xu###
(289914, 289915)
 It has a hexagonalCaAl2Si2-type structure with the (Zn,Mn)2As2 layer forminga honeycomb-like network.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 12, 'K', 1],[73.0, 5, 'T', 1],[80.0, 2, 'K', 1],[122.0, -38, '%', 2],[150.0, -99.8, '%', 2],[160.0, 5, 'T', 2],[171.0, 2, 'K', 2]

B/Mn
###Sr$_{0.9}$K$_{0.1}$Zn$_{1.8}$Mn$_{0.2}$As$_{2}$: a ferromagnetic semiconductor with colossal magnetoresistance|Xiaojun Yang,Qian Chen,Yupeng Li,Zhen Wang,Jinke Bao,Yuke Li,Qian Tao,Guanghan Cao,Zhu-An Xu###
(289978, 289980)
 Magnetization measurements show that the sampleundergoes a ferromagnetic transition with a Curie temperature of 12 K andrevisionmagnetic moment reaches about 1.5 muB/Mn under mu0H  5 Tand T<missing VAR>  2 K.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[17.0, 12, 'K', 0],[8.0, 5, 'T', 0],[15.0, 2, 'K', 0],[57.0, -38, '%', 1],[85.0, -99.8, '%', 1],[95.0, 5, 'T', 1],[106.0, 2, 'K', 1]

H
###Sr$_{0.9}$K$_{0.1}$Zn$_{1.8}$Mn$_{0.2}$As$_{2}$: a ferromagnetic semiconductor with colossal magnetoresistance|Xiaojun Yang,Qian Chen,Yupeng Li,Zhen Wang,Jinke Bao,Yuke Li,Qian Tao,Guanghan Cao,Zhu-An Xu###
(289986, 289986)
 Magnetization measurements show that the sampleundergoes a ferromagnetic transition with a Curie temperature of 12 K andrevisionmagnetic moment reaches about 1.5 muB/Mn under mu0H  5 Tand T<missing VAR>  2 K.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 12, 'K', 0],[2.0, 5, 'T', 0],[9.0, 2, 'K', 0],[51.0, -38, '%', 1],[79.0, -99.8, '%', 1],[89.0, 5, 'T', 1],[100.0, 2, 'K', 1]

(H)
###Sr$_{0.9}$K$_{0.1}$Zn$_{1.8}$Mn$_{0.2}$As$_{2}$: a ferromagnetic semiconductor with colossal magnetoresistance|Xiaojun Yang,Qian Chen,Yupeng Li,Zhen Wang,Jinke Bao,Yuke Li,Qian Tao,Guanghan Cao,Zhu-An Xu###
(290017, 290019)
 Surprisingly, a colossal negative magnetoresistance, defined as[rho(H)-rho(0)]/rho(0), up to -38% under a low field of mu0H  0.1T<missing VAR> and to -99.8% under mu0H  5 T, was observed at T<missing VAR>  2 K.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 12, 'K', 1],[29.0, 5, 'T', 1],[22.0, 2, 'K', 1],[18.0, -38, '%', 0],[46.0, -99.8, '%', 0],[56.0, 5, 'T', 0],[67.0, 2, 'K', 0]

H
###Sr$_{0.9}$K$_{0.1}$Zn$_{1.8}$Mn$_{0.2}$As$_{2}$: a ferromagnetic semiconductor with colossal magnetoresistance|Xiaojun Yang,Qian Chen,Yupeng Li,Zhen Wang,Jinke Bao,Yuke Li,Qian Tao,Guanghan Cao,Zhu-An Xu###
(290053, 290053)
 Surprisingly, a colossal negative magnetoresistance, defined as[rho(H)-rho(0)]/rho(0), up to -38% under a low field of mu0H  0.1T<missing VAR> and to -99.8% under mu0H  5 T, was observed at T<missing VAR>  2 K.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 12, 'K', 1],[65.0, 5, 'T', 1],[58.0, 2, 'K', 1],[16.0, -38, '%', 0],[12.0, -99.8, '%', 0],[22.0, 5, 'T', 0],[33.0, 2, 'K', 0]

H
###Sr$_{0.9}$K$_{0.1}$Zn$_{1.8}$Mn$_{0.2}$As$_{2}$: a ferromagnetic semiconductor with colossal magnetoresistance|Xiaojun Yang,Qian Chen,Yupeng Li,Zhen Wang,Jinke Bao,Yuke Li,Qian Tao,Guanghan Cao,Zhu-An Xu###
(290073, 290073)
 Surprisingly, a colossal negative magnetoresistance, defined as[rho(H)-rho(0)]/rho(0), up to -38% under a low field of mu0H  0.1T<missing VAR> and to -99.8% under mu0H  5 T, was observed at T<missing VAR>  2 K.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 12, 'K', 1],[85.0, 5, 'T', 1],[78.0, 2, 'K', 1],[36.0, -38, '%', 0],[8.0, -99.8, '%', 0],[2.0, 5, 'T', 0],[13.0, 2, 'K', 0]

In
###Large magnetoresistance from long-range interface coupling in armchair graphene nanoribbon junctions|Suchun Li,Young-Woo Son,Su Ying Quek###
(290493, 290493)
 In recent years, bottom-up synthesis procedures have achieved significantadvancements in atomically-controlled growth of several-nanometer-long graphenenanoribbons with armchair-shaped edges (AG<missing VAR>NRs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 900, '%', 2]

N
###Large magnetoresistance from long-range interface coupling in armchair graphene nanoribbon junctions|Suchun Li,Young-Woo Son,Su Ying Quek###
(290549, 290549)
 In recent years, bottom-up synthesis procedures have achieved significantadvancements in atomically-controlled growth of several-nanometer-long graphenenanoribbons with armchair-shaped edges (AG<missing VAR>NRs).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 900, '%', 2]

N
###Large magnetoresistance from long-range interface coupling in armchair graphene nanoribbon junctions|Suchun Li,Young-Woo Son,Su Ying Quek###
(290581, 290581)
 This greatly encourages us toexplore the potential of such well-defined AG<missing VAR>NRs in electronics andspintronics.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 900, '%', 1]

In
###Revealing surface states in In-doped SnTe superconducting nanoplates with low bulk mobility|Jie Shen,Yujun Xie,Judy J. Cha###
(290835, 290835)
Revealing surface states in In-doped SnTe superconducting nanoplates with low bulk mobility.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 0, 'to', 3],[139.0, 0.1, 'and', 3],[254.0, 10, 'K', 5]

SnTe
###Revealing surface states in In-doped SnTe superconducting nanoplates with low bulk mobility|Jie Shen,Yujun Xie,Judy J. Cha###
(290839, 290840)
Revealing surface states in In-doped SnTe superconducting nanoplates with low bulk mobility.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 0, 'to', 3],[134.0, 0.1, 'and', 3],[249.0, 10, 'K', 5]

(In)
###Revealing surface states in In-doped SnTe superconducting nanoplates with low bulk mobility|Jie Shen,Yujun Xie,Judy J. Cha###
(290857, 290859)
 Indium (In) doping in topological crystalline insulator SnTe inducessuperconductivity, making In-doped SnTe a candidate for a topologicalsuperconductor.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 0, 'to', 2],[115.0, 0.1, 'and', 2],[230.0, 10, 'K', 4]

SnTe
###Revealing surface states in In-doped SnTe superconducting nanoplates with low bulk mobility|Jie Shen,Yujun Xie,Judy J. Cha###
(290871, 290872)
 Indium (In) doping in topological crystalline insulator SnTe inducessuperconductivity, making In-doped SnTe a candidate for a topologicalsuperconductor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 0, 'to', 2],[102.0, 0.1, 'and', 2],[217.0, 10, 'K', 4]

In
###Revealing surface states in In-doped SnTe superconducting nanoplates with low bulk mobility|Jie Shen,Yujun Xie,Judy J. Cha###
(290882, 290882)
 Indium (In) doping in topological crystalline insulator SnTe inducessuperconductivity, making In-doped SnTe a candidate for a topologicalsuperconductor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 0, 'to', 2],[92.0, 0.1, 'and', 2],[207.0, 10, 'K', 4]

SnTe
###Revealing surface states in In-doped SnTe superconducting nanoplates with low bulk mobility|Jie Shen,Yujun Xie,Judy J. Cha###
(290886, 290887)
 Indium (In) doping in topological crystalline insulator SnTe inducessuperconductivity, making In-doped SnTe a candidate for a topologicalsuperconductor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 0, 'to', 2],[87.0, 0.1, 'and', 2],[202.0, 10, 'K', 4]

SnTe
###Revealing surface states in In-doped SnTe superconducting nanoplates with low bulk mobility|Jie Shen,Yujun Xie,Judy J. Cha###
(290903, 290904)
 SnTe nanostructures offer well-defined nanoscale morphology andhigh surface-to-volume ratios to enhance surface effects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 0, 'to', 1],[70.0, 0.1, 'and', 1],[185.0, 10, 'K', 3]

In
###Revealing surface states in In-doped SnTe superconducting nanoplates with low bulk mobility|Jie Shen,Yujun Xie,Judy J. Cha###
(290948, 290948)
 Here, we studyIn-doped SnTe nanoplates, InxSn1-xTe, with x<missing VAR> ranging from 0 to 0.1 and showthey superconduct.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 0, 'to', 0],[26.0, 0.1, 'and', 0],[141.0, 10, 'K', 2]

SnTe
###Revealing surface states in In-doped SnTe superconducting nanoplates with low bulk mobility|Jie Shen,Yujun Xie,Judy J. Cha###
(290952, 290953)
 Here, we studyIn-doped SnTe nanoplates, InxSn1-xTe, with x<missing VAR> ranging from 0 to 0.1 and showthey superconduct.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 0, 'to', 0],[21.0, 0.1, 'and', 0],[136.0, 10, 'K', 2]

Sn1-xTe
###Revealing surface states in In-doped SnTe superconducting nanoplates with low bulk mobility|Jie Shen,Yujun Xie,Judy J. Cha###
(290959, 290963)
 Here, we studyIn-doped SnTe nanoplates, InxSn1-xTe, with x<missing VAR> ranging from 0 to 0.1 and showthey superconduct.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[10.0, 0, 'to', 0],[11.0, 0.1, 'and', 0],[126.0, 10, 'K', 2]

In
###Revealing surface states in In-doped SnTe superconducting nanoplates with low bulk mobility|Jie Shen,Yujun Xie,Judy J. Cha###
(290995, 290995)
 More importantly, we show that In doping reduces the bulkmobility of InxSn1-xTe such that the surface states are revealed inmagnetotransport despite the high bulk carrier density.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 0, 'to', 1],[21.0, 0.1, 'and', 1],[94.0, 10, 'K', 1]

Sn1-xTe
###Revealing surface states in In-doped SnTe superconducting nanoplates with low bulk mobility|Jie Shen,Yujun Xie,Judy J. Cha###
(291011, 291015)
 More importantly, we show that In doping reduces the bulkmobility of InxSn1-xTe such that the surface states are revealed inmagnetotransport despite the high bulk carrier density.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[38.0, 0, 'to', 1],[37.0, 0.1, 'and', 1],[74.0, 10, 'K', 1]

Sn1-xTe
###Revealing surface states in In-doped SnTe superconducting nanoplates with low bulk mobility|Jie Shen,Yujun Xie,Judy J. Cha###
(291150, 291154)
 We also show that the weak antilocalization observed inInxSn1-xTe nanoplates is a bulk effect.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[177.0, 0, 'to', 4],[176.0, 0.1, 'and', 4],[61.0, 10, 'K', 2]

In
###Magnetoresistance in two-component systems|P. S. Alekseev,A. P. Dmitriev,I. V. Gornyi,V. Yu. Kachorovskii,B. N. Narozhny,M. Schuett,M. Titov###
(291419, 291419)
 In narrow samples and at strong enoughmagnetic fields, the boundary region dominates over the bulk leading to linearmagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Rectification of radio frequency current in giant magnetoresistance spin valve|Sławomir Ziętek,Piotr Ogrodnik,Marek Frankowski,Jakub Chęciński,Piotr Wiśniowski,Witold Skowroński,Jerzy Wrona,Tomasz Stobiecki,Antoni Żywczak,Józef Barnaś###
(291570, 291570)
 In such multilayer structures,symmetry of the current distribution along the vertical direction is brokenand, as a result, a non-compensated Oersted field acting on the magnetic freelayer appears.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Rectification of radio frequency current in giant magnetoresistance spin valve|Sławomir Ziętek,Piotr Ogrodnik,Marek Frankowski,Jakub Chęciński,Piotr Wiśniowski,Witold Skowroński,Jerzy Wrona,Tomasz Stobiecki,Antoni Żywczak,Józef Barnaś###
(291731, 291731)
 This leads to rectification of theapplied radio frequency current and induces a direct current voltage VD<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Rectification of radio frequency current in giant magnetoresistance spin valve|Sławomir Ziętek,Piotr Ogrodnik,Marek Frankowski,Jakub Chęciński,Piotr Wiśniowski,Witold Skowroński,Jerzy Wrona,Tomasz Stobiecki,Antoni Żywczak,Józef Barnaś###
(291733, 291733)
 This leads to rectification of theapplied radio frequency current and induces a direct current voltage VD<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Rectification of radio frequency current in giant magnetoresistance spin valve|Sławomir Ziętek,Piotr Ogrodnik,Marek Frankowski,Jakub Chęciński,Piotr Wiśniowski,Witold Skowroński,Jerzy Wrona,Tomasz Stobiecki,Antoni Żywczak,Józef Barnaś###
(291767, 291767)
We present a theoretical description of this phenomenon and calculate the spindiode signal, VD<missing VAR>C, as a function of frequency, external magnetic field,and angle at which the external field is applied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Rectification of radio frequency current in giant magnetoresistance spin valve|Sławomir Ziętek,Piotr Ogrodnik,Marek Frankowski,Jakub Chęciński,Piotr Wiśniowski,Witold Skowroński,Jerzy Wrona,Tomasz Stobiecki,Antoni Żywczak,Józef Barnaś###
(291769, 291769)
We present a theoretical description of this phenomenon and calculate the spindiode signal, VD<missing VAR>C, as a function of frequency, external magnetic field,and angle at which the external field is applied.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(FS)
###Magnetoresistance of layered conductors under conditions of topological phase transition|O. Galbova,V. Peschansky###
(291938, 291941)
 The resistance of layered conductors with a multisheet Fermi surface (FS), ina high magnetic field, in the immediate vicinity of Lifshics<missing VAR> topologicaltransition when the separate FS sheets are drown together by an externalaction, pressure in part (and eventual change of the FS connectivity) isstudied theoretically.
Featurization successful!
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FS
###Magnetoresistance of layered conductors under conditions of topological phase transition|O. Galbova,V. Peschansky###
(291980, 291981)
 The resistance of layered conductors with a multisheet Fermi surface (FS), ina high magnetic field, in the immediate vicinity of Lifshics<missing VAR> topologicaltransition when the separate FS sheets are drown together by an externalaction, pressure in part (and eventual change of the FS connectivity) isstudied theoretically.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FS
###Magnetoresistance of layered conductors under conditions of topological phase transition|O. Galbova,V. Peschansky###
(292018, 292019)
 The resistance of layered conductors with a multisheet Fermi surface (FS), ina high magnetic field, in the immediate vicinity of Lifshics<missing VAR> topologicaltransition when the separate FS sheets are drown together by an externalaction, pressure in part (and eventual change of the FS connectivity) isstudied theoretically.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FS
###Magnetoresistance of layered conductors under conditions of topological phase transition|O. Galbova,V. Peschansky###
(292057, 292058)
 Analysis of magnetoresistance near topologicaltransition is illustrated for the case of FS in the shape of lightly corrugatedcylinder and two corrugated planes distributed with a repeated period in thepulse space.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FS
###Magnetoresistance of layered conductors under conditions of topological phase transition|O. Galbova,V. Peschansky###
(292114, 292115)
 It yields, that as the FS plane sheets approach sufficiently thecylinder, the charge carriers produce a magnetic breakdown of one FS sheet toanother, decreasing a sharp anisotropy of magnetoresistance to the in-planecurrent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FS
###Magnetoresistance of layered conductors under conditions of topological phase transition|O. Galbova,V. Peschansky###
(292149, 292150)
 It yields, that as the FS plane sheets approach sufficiently thecylinder, the charge carriers produce a magnetic breakdown of one FS sheet toanother, decreasing a sharp anisotropy of magnetoresistance to the in-planecurrent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magnetoresistance of layered conductors under conditions of topological phase transition|O. Galbova,V. Peschansky###
(292234, 292234)
 In the intimate vicinity of topological transition, when the energy gapbetween FS layers is negligibly small, the resistance is saturated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FS
###Magnetoresistance of layered conductors under conditions of topological phase transition|O. Galbova,V. Peschansky###
(292260, 292261)
 In the intimate vicinity of topological transition, when the energy gapbetween FS layers is negligibly small, the resistance is saturated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Hydrodynamics in graphene: Linear-response transport|B. N. Narozhny,I. V. Gornyi,M. Titov,M. Schütt,A. D. Mirlin###
(292344, 292344)
 Inthe interaction-dominated regime, the collinear scattering singularity in thecollision integral leads to fast unidirectional thermalization and allows us todescribe the system in terms of three macroscopic currents carrying electriccharge, energy, and quasiparticle imbalance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Hydrodynamics in graphene: Linear-response transport|B. N. Narozhny,I. V. Gornyi,M. Titov,M. Schütt,A. D. Mirlin###
(292512, 292512)
 In small, mesoscopic samples themacroscopic currents are inhomogeneous which leads to linear magnetoresistancein classically strong fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeSe
###Multiband character of $β$-FeSe: Angular dependence of the magnetoresistance and upper critical field|M. L. Amigó,V. Ale Crivillero,D. G. Franco,G. Nieva###
(292634, 292635)
Multiband character of -FeSe Angular dependence of the magnetoresistance and upper critical field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 16, 'T', 1],[67.0, 90, 'K', 2]

FeSe
###Multiband character of $β$-FeSe: Angular dependence of the magnetoresistance and upper critical field|M. L. Amigó,V. Ale Crivillero,D. G. Franco,G. Nieva###
(292683, 292684)
 We studied ab-plane transport properties in single crystals of thesuperconductor beta-FeSe up to 16 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 16, 'T', 0],[18.0, 90, 'K', 1]

In
###Multiband character of $β$-FeSe: Angular dependence of the magnetoresistance and upper critical field|M. L. Amigó,V. Ale Crivillero,D. G. Franco,G. Nieva###
(292692, 292692)
 In the normal state, below 90 K, thecrystals present a strongly anisotropic positive magnetoresistance that becomesnegligible above that temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 16, 'T', 1],[10.0, 90, 'K', 0]

In
###Multiband character of $β$-FeSe: Angular dependence of the magnetoresistance and upper critical field|M. L. Amigó,V. Ale Crivillero,D. G. Franco,G. Nieva###
(292736, 292736)
 In the superconducting state (Tc8.87(5)K) the upper critical field anisotropy Hc<missing VAR>2parallelab /Hc<missing VAR>2parallelc<missing VAR> changes with temperature and the angular dependence ofthe dissipation for fixed temperatures and fields reflects a stronglyanisotropic behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 16, 'T', 2],[34.0, 90, 'K', 1]

K
###Multiband character of $β$-FeSe: Angular dependence of the magnetoresistance and upper critical field|M. L. Amigó,V. Ale Crivillero,D. G. Franco,G. Nieva###
(292753, 292753)
 In the superconducting state (Tc8.87(5)K) the upper critical field anisotropy Hc<missing VAR>2parallelab /Hc<missing VAR>2parallelc<missing VAR> changes with temperature and the angular dependence ofthe dissipation for fixed temperatures and fields reflects a stronglyanisotropic behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 16, 'T', 2],[51.0, 90, 'K', 1]

H
###Multiband character of $β$-FeSe: Angular dependence of the magnetoresistance and upper critical field|M. L. Amigó,V. Ale Crivillero,D. G. Franco,G. Nieva###
(292766, 292766)
 In the superconducting state (Tc8.87(5)K) the upper critical field anisotropy Hc<missing VAR>2parallelab /Hc<missing VAR>2parallelc<missing VAR> changes with temperature and the angular dependence ofthe dissipation for fixed temperatures and fields reflects a stronglyanisotropic behavior.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 16, 'T', 2],[64.0, 90, 'K', 1]

H
###Multiband character of $β$-FeSe: Angular dependence of the magnetoresistance and upper critical field|M. L. Amigó,V. Ale Crivillero,D. G. Franco,G. Nieva###
(292775, 292775)
 In the superconducting state (Tc8.87(5)K) the upper critical field anisotropy Hc<missing VAR>2parallelab /Hc<missing VAR>2parallelc<missing VAR> changes with temperature and the angular dependence ofthe dissipation for fixed temperatures and fields reflects a stronglyanisotropic behavior.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 16, 'T', 2],[73.0, 90, 'K', 1]

GaAs/AlGaAs
###Evolution of the linear-polarization-angle-dependence of the radiation-induced magnetoresistance-oscillations with microwave power|Tianyu Ye,W. Wegscheider,R. G. Mani###
(293015, 293020)
 We examine the role of the microwave power in the linear polarization angledependence of the microwave radiation induced magnetoresistance oscillationsobserved in the high mobility GaAs/AlGaAs two dimensional electron system.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

P
###Evolution of the linear-polarization-angle-dependence of the radiation-induced magnetoresistance-oscillations with microwave power|Tianyu Ye,W. Wegscheider,R. G. Mani###
(293089, 293089)
Diagonal resistance R<missing VAR>xx was measured at fixed magnetic fieldscorresponding to the photo-excited oscillatory extrema of R<missing VAR>xx as afunction of both the microwave power, P, and the linear polarization angle,theta.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Te
###Quantum oscillations of magnetoresistance of the submicrometer thick bismuth telluride-based films|L. N. Lukyanova,Yu. A. Boikov,V. A. Danilov,O. A. Usov,M. P. Volkov,V. A. Kutasov###
(293266, 293266)
 Hetero-epitaxial films based on bismuth telluride with excess of Te weregrown by hat wall technique at the surface of the mica (muscovite).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 10, 'K', 1],[86.0, 6, 'to', 1],[87.0, 14, 'T', 1]

Cd3As2
###Linear magnetoresistance caused by mobility fluctuations in the n-doped Cd3As2|A. Narayanan,M. D. Watson,S. F. Blake,Y. L. Chen,D. Prabhakaran,B. Yan,N. Bruyant,L. Drigo,I. I. Mazin,C. Felser,T. Kong,P. C. Canfield,A. I. Coldea###
(293539, 293542)
Linear magnetoresistance caused by mobility fluctuations in the n<missing VAR>-doped Cd3As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 65, 'T', 2],[105.0, 1.5, 'K', 2],[108.0, 300, 'K', 2],[131.0, 65, 'T', 3]

Cd3As2
###Linear magnetoresistance caused by mobility fluctuations in the n-doped Cd3As2|A. Narayanan,M. D. Watson,S. F. Blake,Y. L. Chen,D. Prabhakaran,B. Yan,N. Bruyant,L. Drigo,I. I. Mazin,C. Felser,T. Kong,P. C. Canfield,A. I. Coldea###
(293545, 293548)
 Cd3As2 is a candidate three-dimensional Dirac semi-metal which hasexceedingly high mobility and non-saturating linear magnetoresistance that maybe relevant for future practical applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 65, 'T', 1],[99.0, 1.5, 'K', 1],[102.0, 300, 'K', 1],[125.0, 65, 'T', 2]

Cd3As2
###Linear magnetoresistance caused by mobility fluctuations in the n-doped Cd3As2|A. Narayanan,M. D. Watson,S. F. Blake,Y. L. Chen,D. Prabhakaran,B. Yan,N. Bruyant,L. Drigo,I. I. Mazin,C. Felser,T. Kong,P. C. Canfield,A. I. Coldea###
(293624, 293627)
 We report magnetotransport andtunnel diode oscillation measurements on Cd3As2, in magnetic fields up to 65 Tand temperatures between 1.5K to 300K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 65, 'T', 0],[20.0, 1.5, 'K', 0],[23.0, 300, 'K', 0],[46.0, 65, 'T', 1]

In
###Linear magnetoresistance caused by mobility fluctuations in the n-doped Cd3As2|A. Narayanan,M. D. Watson,S. F. Blake,Y. L. Chen,D. Prabhakaran,B. Yan,N. Bruyant,L. Drigo,I. I. Mazin,C. Felser,T. Kong,P. C. Canfield,A. I. Coldea###
(293819, 293819)
 In very high fields we also detect signatures oflarge Zeeman spin-splitting (g<missing VAR>16).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[180.0, 65, 'T', 3],[172.0, 1.5, 'K', 3],[169.0, 300, 'K', 3],[146.0, 65, 'T', 2]

In
###Magnetization reversal assisted by half antivortex states in nanostructured circular cobalt disks|Antonio Lara,Oleksandr V. Dobrovolskiy,José L. Prieto,Michael Huth,Farkhad G. Aliev###
(294004, 294004)
 In-plane anisotropic magnetoresistance and broadbandsusceptibility measurements accompanied by micromagnetic simulations revealthat cobalt disks with two and three linearly arranged nanoholes directed at 45and 135 degrees with respect to the external magnetic field show reproduciblestep-like changes in the anisotropic magnetoresistance and magneticpermeability due to transitions between different intermediate states mediatedby vortices and half antivortices confined to the dot nanoholes and edges,respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 135, 'degrees', 0]

In
###Unidirectional spin Hall magnetoresistance in ferromagnet/normal metal bilayers|Can Onur Avci,Kevin Garello,Abhijit Ghosh,Mihai Gabureac,Santos F. Alvarado,Pietro Gambardella###
(294233, 294233)
 In noncentrosymmetric conductors, however, nonlinearresistive terms can give rise to a current dependence that is quadratic in theapplied voltage and linear in the magnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TaCo
###Unidirectional spin Hall magnetoresistance in ferromagnet/normal metal bilayers|Can Onur Avci,Kevin Garello,Abhijit Ghosh,Mihai Gabureac,Santos F. Alvarado,Pietro Gambardella###
(294373, 294374)
 We show that the longitudinalresistance of TaCo and PtCo bilayers changes when reversing the polarity ofthe current or the sign of the magnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PtCo
###Unidirectional spin Hall magnetoresistance in ferromagnet/normal metal bilayers|Can Onur Avci,Kevin Garello,Abhijit Ghosh,Mihai Gabureac,Santos F. Alvarado,Pietro Gambardella###
(294378, 294379)
 We show that the longitudinalresistance of TaCo and PtCo bilayers changes when reversing the polarity ofthe current or the sign of the magnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ta
###Unidirectional spin Hall magnetoresistance in ferromagnet/normal metal bilayers|Can Onur Avci,Kevin Garello,Abhijit Ghosh,Mihai Gabureac,Santos F. Alvarado,Pietro Gambardella###
(294441, 294441)
 This unidirectionalmagnetoresistance scales linearly with current density and has opposite sign inTa and Pt, which we associate with the modification of the interface scatteringpotential induced by the spin Hall effect in these materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Unidirectional spin Hall magnetoresistance in ferromagnet/normal metal bilayers|Can Onur Avci,Kevin Garello,Abhijit Ghosh,Mihai Gabureac,Santos F. Alvarado,Pietro Gambardella###
(294445, 294445)
 This unidirectionalmagnetoresistance scales linearly with current density and has opposite sign inTa and Pt, which we associate with the modification of the interface scatteringpotential induced by the spin Hall effect in these materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Multiple Fermi pockets revealed by Shubnikov-de Haas oscillations in WTe2|Fei-Xiang Xiang,Menno Veldhorst,Shi-Xue Dou,Xiao-Lin Wang###
(294581, 294583)
Multiple Fermi pockets revealed by Shubnikov-de Haas oscillations in WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 2.5, 'to', 2],[62.0, 200, 'K', 2],[74.0, 8, 'T', 2],[153.0, 0.31, 'me', 4]

WTe2
###Multiple Fermi pockets revealed by Shubnikov-de Haas oscillations in WTe2|Fei-Xiang Xiang,Menno Veldhorst,Shi-Xue Dou,Xiao-Lin Wang###
(294609, 294611)
 We use magneto-transport measurements to investigate the electronic structureof WTe2 single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 2.5, 'to', 1],[34.0, 200, 'K', 1],[46.0, 8, 'T', 1],[125.0, 0.31, 'me', 3]

H
###Multiple Fermi pockets revealed by Shubnikov-de Haas oscillations in WTe2|Fei-Xiang Xiang,Menno Veldhorst,Shi-Xue Dou,Xiao-Lin Wang###
(294695, 294695)
The fast Fourier transform of the SdH oscillations reveals three oscillationfrequencies, corresponding to three pairs of Fermi pockets with comparableeffective masses , m<missing VAR>  0.31 me.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 2.5, 'to', 2],[50.0, 200, 'K', 2],[38.0, 8, 'T', 2],[41.0, 0.31, 'me', 0]

WTe2
###Multiple Fermi pockets revealed by Shubnikov-de Haas oscillations in WTe2|Fei-Xiang Xiang,Menno Veldhorst,Shi-Xue Dou,Xiao-Lin Wang###
(294828, 294830)
 These magnetotransport measurements reveal the complexelectronic structure in WTe2, explaining the nonsaturating magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[184.0, 2.5, 'to', 4],[183.0, 200, 'K', 4],[171.0, 8, 'T', 4],[92.0, 0.31, 'me', 2]

Ge/SiGe
###Radiation-induced resistance oscillations in a 2D hole gas: a demonstration of a universal effect|Jesús Iñarrea,Gloria Platero###
(294964, 294967)
 We consider a high-mobility two-dimensionalhole gas hosted in a pure Ge/SiGe quantum well.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[103.0, 2, 'D', 2]

As
###Radiation-induced resistance oscillations in a 2D hole gas: a demonstration of a universal effect|Jesús Iñarrea,Gloria Platero###
(295128, 295128)
 As a result the calculated magnetoresistancereveals an interference profile due to the different effective masses of thetwo types of carriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[267.0, 2, 'D', 7]

Cd3As2
###Room-temperature chiral charge pumping in Dirac semimetals|Cheng Zhang,Enze Zhang,Weiyi Wang,Yanwen Liu,Zhi-Gang Chen,Shiheng Lu,Sihang Liang,Junzhi Cao,Xiang Yuan,Lei Tang,Qian Li,Chao Zhou,Teng Gu,Yizheng Wu,Jin Zou,Faxian Xiu###
(295328, 295331)
 Here, we report the field-modulated chiral charge pumping processand valley diffusion in Cd3As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La1-x
###Fermi surface of three-dimensional La1-xSrxMnO3 explored by soft-X-ray ARPES: Rhombohedral lattice distortion and its effect on magnetoresistance|L. L. Lev,J. Krempaský,U. Staub,V. A. Rogalev,T. Schmitt,M. Shi,P. Blaha,A. S. Mishchenko,A. A. Veligzhanin,Y. V. Zubavichus,M. B. Tsetlin,H. Volfová,J. Braun,J. Minár,V. N. Strocov###
(295546, 295549)
Fermi surface of three-dimensional La1-xSrxMnO3 explored by soft-X<missing VAR>-ray ARPES Rhombohedral lattice distortion and its effect on magnetoresistance.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

MnO3
###Fermi surface of three-dimensional La1-xSrxMnO3 explored by soft-X-ray ARPES: Rhombohedral lattice distortion and its effect on magnetoresistance|L. L. Lev,J. Krempaský,U. Staub,V. A. Rogalev,T. Schmitt,M. Shi,P. Blaha,A. S. Mishchenko,A. A. Veligzhanin,Y. V. Zubavichus,M. B. Tsetlin,H. Volfová,J. Braun,J. Minár,V. N. Strocov###
(295551, 295553)
Fermi surface of three-dimensional La1-xSrxMnO3 explored by soft-X<missing VAR>-ray ARPES Rhombohedral lattice distortion and its effect on magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Fermi surface of three-dimensional La1-xSrxMnO3 explored by soft-X-ray ARPES: Rhombohedral lattice distortion and its effect on magnetoresistance|L. L. Lev,J. Krempaský,U. Staub,V. A. Rogalev,T. Schmitt,M. Shi,P. Blaha,A. S. Mishchenko,A. A. Veligzhanin,Y. V. Zubavichus,M. B. Tsetlin,H. Volfová,J. Braun,J. Minár,V. N. Strocov###
(295569, 295569)
Fermi surface of three-dimensional La1-xSrxMnO3 explored by soft-X<missing VAR>-ray ARPES Rhombohedral lattice distortion and its effect on magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La1-x
###Fermi surface of three-dimensional La1-xSrxMnO3 explored by soft-X-ray ARPES: Rhombohedral lattice distortion and its effect on magnetoresistance|L. L. Lev,J. Krempaský,U. Staub,V. A. Rogalev,T. Schmitt,M. Shi,P. Blaha,A. S. Mishchenko,A. A. Veligzhanin,Y. V. Zubavichus,M. B. Tsetlin,H. Volfová,J. Braun,J. Minár,V. N. Strocov###
(295607, 295610)
 Electronic structure of the three-dimensional colossal magnetoresistiveperovskite La1-xSrxMnO3 has been established using soft-X<missing VAR>-ray ARPES with itsintrinsically sharp definition of three-dimensional electron momentum.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

MnO3
###Fermi surface of three-dimensional La1-xSrxMnO3 explored by soft-X-ray ARPES: Rhombohedral lattice distortion and its effect on magnetoresistance|L. L. Lev,J. Krempaský,U. Staub,V. A. Rogalev,T. Schmitt,M. Shi,P. Blaha,A. S. Mishchenko,A. A. Veligzhanin,Y. V. Zubavichus,M. B. Tsetlin,H. Volfová,J. Braun,J. Minár,V. N. Strocov###
(295612, 295614)
 Electronic structure of the three-dimensional colossal magnetoresistiveperovskite La1-xSrxMnO3 has been established using soft-X<missing VAR>-ray ARPES with itsintrinsically sharp definition of three-dimensional electron momentum.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Fermi surface of three-dimensional La1-xSrxMnO3 explored by soft-X-ray ARPES: Rhombohedral lattice distortion and its effect on magnetoresistance|L. L. Lev,J. Krempaský,U. Staub,V. A. Rogalev,T. Schmitt,M. Shi,P. Blaha,A. S. Mishchenko,A. A. Veligzhanin,Y. V. Zubavichus,M. B. Tsetlin,H. Volfová,J. Braun,J. Minár,V. N. Strocov###
(295634, 295634)
 Electronic structure of the three-dimensional colossal magnetoresistiveperovskite La1-xSrxMnO3 has been established using soft-X<missing VAR>-ray ARPES with itsintrinsically sharp definition of three-dimensional electron momentum.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

U
###Fermi surface of three-dimensional La1-xSrxMnO3 explored by soft-X-ray ARPES: Rhombohedral lattice distortion and its effect on magnetoresistance|L. L. Lev,J. Krempaský,U. Staub,V. A. Rogalev,T. Schmitt,M. Shi,P. Blaha,A. S. Mishchenko,A. A. Veligzhanin,Y. V. Zubavichus,M. B. Tsetlin,H. Volfová,J. Braun,J. Minár,V. N. Strocov###
(295699, 295699)
 Theexperimental results show much weaker polaronic coupling compared to thebilayer manganites and are consistent with the GGAU band structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Ultrafast Carrier Dynamics in the Large Magnetoresistance Material WTe$_{2}$|Y. M. Dai,J. Bowlan,H. Li,H. Miao,S. F. Wu,W. D. Kong,Y. G. Shi,S. A. Trugman,J. -X. Zhu,H. Ding,A. J. Taylor,D. A. Yarotski,R. P. Prasankumar###
(295882, 295884)
Ultrafast Carrier Dynamics in the Large Magnetoresistance Material WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 300, 'K', 4]

WTe2
###Ultrafast Carrier Dynamics in the Large Magnetoresistance Material WTe$_{2}$|Y. M. Dai,J. Bowlan,H. Li,H. Miao,S. F. Wu,W. D. Kong,Y. G. Shi,S. A. Trugman,J. -X. Zhu,H. Ding,A. J. Taylor,D. A. Yarotski,R. P. Prasankumar###
(295920, 295922)
 Ultrafast optical pump-probe spectroscopy is used to track carrier dynamicsin the large magnetoresistance material WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 300, 'K', 3]

As
###Ultrafast Carrier Dynamics in the Large Magnetoresistance Material WTe$_{2}$|Y. M. Dai,J. Bowlan,H. Li,H. Miao,S. F. Wu,W. D. Kong,Y. G. Shi,S. A. Trugman,J. -X. Zhu,H. Ding,A. J. Taylor,D. A. Yarotski,R. P. Prasankumar###
(296040, 296040)
 As the temperature decreases from 300 K, the timescale governingthis process increases due to the reduction of the phonon population.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 300, 'K', 0]

K
###Ultrafast Carrier Dynamics in the Large Magnetoresistance Material WTe$_{2}$|Y. M. Dai,J. Bowlan,H. Li,H. Miao,S. F. Wu,W. D. Kong,Y. G. Shi,S. A. Trugman,J. -X. Zhu,H. Ding,A. J. Taylor,D. A. Yarotski,R. P. Prasankumar###
(296091, 296091)
 However,below sim50 K, an unusual decrease of the recombination time sets in, mostlikely due to a change in the electronic structure that has been linked to thelarge magnetoresistance observed in this material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 300, 'K', 1]

WTe2
###Hall effect in the extremely large magnetoresistance semimetal WTe$_2$|Yongkang Luo,H. Li,Y. M. Dai,H. Miao,Y. G. Shi,H. Ding,A. J. Taylor,D. A. Yarotski,R. P. Prasankumar,J. D. Thompson###
(296184, 296186)
Hall effect in the extremely large magnetoresistance semimetal WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Hall effect in the extremely large magnetoresistance semimetal WTe$_2$|Yongkang Luo,H. Li,Y. M. Dai,H. Miao,Y. G. Shi,H. Ding,A. J. Taylor,D. A. Yarotski,R. P. Prasankumar,J. D. Thompson###
(296214, 296216)
 We systematically measured the Hall effect in the extremely largemagnetoresistance semimetal WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Hall effect in the extremely large magnetoresistance semimetal WTe$_2$|Yongkang Luo,H. Li,Y. M. Dai,H. Miao,Y. G. Shi,H. Ding,A. J. Taylor,D. A. Yarotski,R. P. Prasankumar,J. D. Thompson###
(296305, 296305)
 We observeda sudden increase of the hole density below sim160K, which is likelyassociated with the temperature-induced Lifshitz transition reported by aprevious photoemission study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Hall effect in the extremely large magnetoresistance semimetal WTe$_2$|Yongkang Luo,H. Li,Y. M. Dai,H. Miao,Y. G. Shi,H. Ding,A. J. Taylor,D. A. Yarotski,R. P. Prasankumar,J. D. Thompson###
(296343, 296343)
 In addition, a more pronounced reduction inelectron density occurs below 50K, giving rise to comparable electron and holedensities at low temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Hall effect in the extremely large magnetoresistance semimetal WTe$_2$|Yongkang Luo,H. Li,Y. M. Dai,H. Miao,Y. G. Shi,H. Ding,A. J. Taylor,D. A. Yarotski,R. P. Prasankumar,J. D. Thompson###
(296368, 296368)
 In addition, a more pronounced reduction inelectron density occurs below 50K, giving rise to comparable electron and holedensities at low temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Hall effect in the extremely large magnetoresistance semimetal WTe$_2$|Yongkang Luo,H. Li,Y. M. Dai,H. Miao,Y. G. Shi,H. Ding,A. J. Taylor,D. A. Yarotski,R. P. Prasankumar,J. D. Thompson###
(296415, 296415)
 Our observations indicate a possible electronicstructure change below 50K, which might be the direct driving force of theelectron-hole compensation and the extremely large magnetoresistance aswell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PtBi2
###Bulk and surface electronic structure of trigonal structured PtBi2 studied by angle-resolved photoemission spectroscopy|Q. Yao,Y. P. Du,X. J. Yang,Y. Zheng,D. F. Xu,X. H. Niu,H. F. Yang,P. Dudin,T. K. Kim,M. Hoesch,I. Vobornik,Z. -A. Xu,X. G. Wan,D. L. Feng,D. W. Shen###
(296513, 296515)
Bulk and surface electronic structure of trigonal structured PtBi2 studied by angle-resolved photoemission spectroscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PtBi2
###Bulk and surface electronic structure of trigonal structured PtBi2 studied by angle-resolved photoemission spectroscopy|Q. Yao,Y. P. Du,X. J. Yang,Y. Zheng,D. F. Xu,X. H. Niu,H. F. Yang,P. Dudin,T. K. Kim,M. Hoesch,I. Vobornik,Z. -A. Xu,X. G. Wan,D. L. Feng,D. W. Shen###
(296530, 296532)
 PtBi2 with a layered trigonal crystal structure was recently reported toexhibit an unconventional large linear magnetoresistance, while the mechanisminvolved is still elusive.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PtBi2
###Bulk and surface electronic structure of trigonal structured PtBi2 studied by angle-resolved photoemission spectroscopy|Q. Yao,Y. P. Du,X. J. Yang,Y. Zheng,D. F. Xu,X. H. Niu,H. F. Yang,P. Dudin,T. K. Kim,M. Hoesch,I. Vobornik,Z. -A. Xu,X. G. Wan,D. L. Feng,D. W. Shen###
(296700, 296702)
 We findsignificant electron doping in PtBi2, implying a substantial Bi deficiencyinduced disorder therein.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi
###Bulk and surface electronic structure of trigonal structured PtBi2 studied by angle-resolved photoemission spectroscopy|Q. Yao,Y. P. Du,X. J. Yang,Y. Zheng,D. F. Xu,X. H. Niu,H. F. Yang,P. Dudin,T. K. Kim,M. Hoesch,I. Vobornik,Z. -A. Xu,X. G. Wan,D. L. Feng,D. W. Shen###
(296711, 296711)
 We findsignificant electron doping in PtBi2, implying a substantial Bi deficiencyinduced disorder therein.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaBi
###Tuning the electronic and the crystalline structure of LaBi by pressure|F. F. Tafti,M. S. Torikachvili,R. L. Stillwell,B. Baer,E. Stavrou,S. T. Weir,Y. K. Vohra,H. -Y. Yang,E. F. McDonnell,S. K. Kushwaha,Q. D. Gibson,R. J. Cava,J. R. Jeffries###
(296842, 296843)
Tuning the electronic and the crystalline structure of LaBi by pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaBi
###Tuning the electronic and the crystalline structure of LaBi by pressure|F. F. Tafti,M. S. Torikachvili,R. L. Stillwell,B. Baer,E. Stavrou,S. T. Weir,Y. K. Vohra,H. -Y. Yang,E. F. McDonnell,S. K. Kushwaha,Q. D. Gibson,R. J. Cava,J. R. Jeffries###
(296941, 296942)
 To search for a relation between XMR andsuperconductivity, we study the effect of pressure on LaBi taking advantage ofits simple structure and simple composition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P3.5
###Tuning the electronic and the crystalline structure of LaBi by pressure|F. F. Tafti,M. S. Torikachvili,R. L. Stillwell,B. Baer,E. Stavrou,S. T. Weir,Y. K. Vohra,H. -Y. Yang,E. F. McDonnell,S. K. Kushwaha,Q. D. Gibson,R. J. Cava,J. R. Jeffries###
(297000, 297001)
 By increasing pressure we observethe disappearance of XMR followed by the appearance of superconductivity atP3.5 G<missing VAR>Pa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pa
###Tuning the electronic and the crystalline structure of LaBi by pressure|F. F. Tafti,M. S. Torikachvili,R. L. Stillwell,B. Baer,E. Stavrou,S. T. Weir,Y. K. Vohra,H. -Y. Yang,E. F. McDonnell,S. K. Kushwaha,Q. D. Gibson,R. J. Cava,J. R. Jeffries###
(297004, 297004)
 By increasing pressure we observethe disappearance of XMR followed by the appearance of superconductivity atP3.5 G<missing VAR>Pa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Tuning the electronic and the crystalline structure of LaBi by pressure|F. F. Tafti,M. S. Torikachvili,R. L. Stillwell,B. Baer,E. Stavrou,S. T. Weir,Y. K. Vohra,H. -Y. Yang,E. F. McDonnell,S. K. Kushwaha,Q. D. Gibson,R. J. Cava,J. R. Jeffries###
(297044, 297044)
 At higher pressures, P11G<missing VAR>Pa, we find a structural transition from the face center cubic lattice to aprimitive tetragonal lattice in agreement with theoretical predictions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P11
###Tuning the electronic and the crystalline structure of LaBi by pressure|F. F. Tafti,M. S. Torikachvili,R. L. Stillwell,B. Baer,E. Stavrou,S. T. Weir,Y. K. Vohra,H. -Y. Yang,E. F. McDonnell,S. K. Kushwaha,Q. D. Gibson,R. J. Cava,J. R. Jeffries###
(297051, 297052)
 At higher pressures, P11G<missing VAR>Pa, we find a structural transition from the face center cubic lattice to aprimitive tetragonal lattice in agreement with theoretical predictions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pa
###Tuning the electronic and the crystalline structure of LaBi by pressure|F. F. Tafti,M. S. Torikachvili,R. L. Stillwell,B. Baer,E. Stavrou,S. T. Weir,Y. K. Vohra,H. -Y. Yang,E. F. McDonnell,S. K. Kushwaha,Q. D. Gibson,R. J. Cava,J. R. Jeffries###
(297056, 297056)
 At higher pressures, P11G<missing VAR>Pa, we find a structural transition from the face center cubic lattice to aprimitive tetragonal lattice in agreement with theoretical predictions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaBi
###Tuning the electronic and the crystalline structure of LaBi by pressure|F. F. Tafti,M. S. Torikachvili,R. L. Stillwell,B. Baer,E. Stavrou,S. T. Weir,Y. K. Vohra,H. -Y. Yang,E. F. McDonnell,S. K. Kushwaha,Q. D. Gibson,R. J. Cava,J. R. Jeffries###
(297131, 297132)
 Wediscuss the relationship between extreme magnetoresistance, superconductivity,and structural transition in LaBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Super-giant magnetoresistance at room-temperature in copper nanowires due to magnetic field modulation of potential barrier heights at nanowire-contact interfaces|Md. I. Hossain,M. Maksud,N. K. R. Palapati,A. Subramanian,J. Atulasimha,S. Bandyopadhyay###
(297225, 297225)
 We have observed a super-giant (10,000,000%) negative magnetoresistance at39 mT field in Cu nanowires contacted with Au contact pads.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 10, ',', 0],[22.0, 0, ',', 0],[20.0, 0, '%', 0]

Au
###Super-giant magnetoresistance at room-temperature in copper nanowires due to magnetic field modulation of potential barrier heights at nanowire-contact interfaces|Md. I. Hossain,M. Maksud,N. K. R. Palapati,A. Subramanian,J. Atulasimha,S. Bandyopadhyay###
(297233, 297233)
 We have observed a super-giant (10,000,000%) negative magnetoresistance at39 mT field in Cu nanowires contacted with Au contact pads.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 10, ',', 0],[30.0, 0, ',', 0],[28.0, 0, '%', 0]

In
###Super-giant magnetoresistance at room-temperature in copper nanowires due to magnetic field modulation of potential barrier heights at nanowire-contact interfaces|Md. I. Hossain,M. Maksud,N. K. R. Palapati,A. Subramanian,J. Atulasimha,S. Bandyopadhyay###
(297240, 297240)
 In these nanowires,potential barriers form at the two Cu/Au interfaces because of Cu oxidationthat results in an ultrathin copper oxide layer forming between Cu and Au.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 10, ',', 1],[37.0, 0, ',', 1],[35.0, 0, '%', 1]

Cu/Au
###Super-giant magnetoresistance at room-temperature in copper nanowires due to magnetic field modulation of potential barrier heights at nanowire-contact interfaces|Md. I. Hossain,M. Maksud,N. K. R. Palapati,A. Subramanian,J. Atulasimha,S. Bandyopadhyay###
(297260, 297262)
 In these nanowires,potential barriers form at the two Cu/Au interfaces because of Cu oxidationthat results in an ultrathin copper oxide layer forming between Cu and Au.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[59.0, 10, ',', 1],[57.0, 0, ',', 1],[55.0, 0, '%', 1]

Cu
###Super-giant magnetoresistance at room-temperature in copper nanowires due to magnetic field modulation of potential barrier heights at nanowire-contact interfaces|Md. I. Hossain,M. Maksud,N. K. R. Palapati,A. Subramanian,J. Atulasimha,S. Bandyopadhyay###
(297270, 297270)
 In these nanowires,potential barriers form at the two Cu/Au interfaces because of Cu oxidationthat results in an ultrathin copper oxide layer forming between Cu and Au.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 10, ',', 1],[67.0, 0, ',', 1],[65.0, 0, '%', 1]

Cu
###Super-giant magnetoresistance at room-temperature in copper nanowires due to magnetic field modulation of potential barrier heights at nanowire-contact interfaces|Md. I. Hossain,M. Maksud,N. K. R. Palapati,A. Subramanian,J. Atulasimha,S. Bandyopadhyay###
(297295, 297295)
 In these nanowires,potential barriers form at the two Cu/Au interfaces because of Cu oxidationthat results in an ultrathin copper oxide layer forming between Cu and Au.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 10, ',', 1],[92.0, 0, ',', 1],[90.0, 0, '%', 1]

Au
###Super-giant magnetoresistance at room-temperature in copper nanowires due to magnetic field modulation of potential barrier heights at nanowire-contact interfaces|Md. I. Hossain,M. Maksud,N. K. R. Palapati,A. Subramanian,J. Atulasimha,S. Bandyopadhyay###
(297299, 297299)
 In these nanowires,potential barriers form at the two Cu/Au interfaces because of Cu oxidationthat results in an ultrathin copper oxide layer forming between Cu and Au.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 10, ',', 1],[96.0, 0, ',', 1],[94.0, 0, '%', 1]

La0.67Sr0.33MnO3
###Investigation of the tunnel magnetoresistance in junctions with a strontium stannate barrier|Matthias Althammer,Amit Vikam Singh,Sahar Keshavarz,Mehmet Kenan Yurtisigi,Rohan Mishra,Albina Borisevich,Patrick LeClair,Arunava Gupta###
(297523, 297529)
 We experimentally investigate the structural, magnetic and electricaltransport properties of La0.67Sr0.33MnO3 based magnetic tunneljunctions with a SrSnO3 barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.066,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.134,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 350, '%', 1]

SrSnO3
###Investigation of the tunnel magnetoresistance in junctions with a strontium stannate barrier|Matthias Althammer,Amit Vikam Singh,Sahar Keshavarz,Mehmet Kenan Yurtisigi,Rohan Mishra,Albina Borisevich,Patrick LeClair,Arunava Gupta###
(297544, 297547)
 We experimentally investigate the structural, magnetic and electricaltransport properties of La0.67Sr0.33MnO3 based magnetic tunneljunctions with a SrSnO3 barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 350, '%', 1]

STiO3
###Investigation of the tunnel magnetoresistance in junctions with a strontium stannate barrier|Matthias Althammer,Amit Vikam Singh,Sahar Keshavarz,Mehmet Kenan Yurtisigi,Rohan Mishra,Albina Borisevich,Patrick LeClair,Arunava Gupta###
(297627, 297630)
 Our results show that despite the largenumber of defects in the strontium stannate barrier, due to the large latticemismatch, the observed tunnel magnetoresistance is comparable to tunneljunctions with a better lattice matched STiO3 barrier, reaching values of upto 350% at T<missing VAR>5 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 350, '%', 0]

K
###Investigation of the tunnel magnetoresistance in junctions with a strontium stannate barrier|Matthias Althammer,Amit Vikam Singh,Sahar Keshavarz,Mehmet Kenan Yurtisigi,Rohan Mishra,Albina Borisevich,Patrick LeClair,Arunava Gupta###
(297654, 297654)
 Our results show that despite the largenumber of defects in the strontium stannate barrier, due to the large latticemismatch, the observed tunnel magnetoresistance is comparable to tunneljunctions with a better lattice matched STiO3 barrier, reaching values of upto 350% at T<missing VAR>5 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 350, '%', 0]

In
###Investigation of the tunnel magnetoresistance in junctions with a strontium stannate barrier|Matthias Althammer,Amit Vikam Singh,Sahar Keshavarz,Mehmet Kenan Yurtisigi,Rohan Mishra,Albina Borisevich,Patrick LeClair,Arunava Gupta###
(297722, 297722)
 Inaddition, the observed TMR vanishes for T<missing VAR>>200 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 350, '%', 2]

K
###Investigation of the tunnel magnetoresistance in junctions with a strontium stannate barrier|Matthias Althammer,Amit Vikam Singh,Sahar Keshavarz,Mehmet Kenan Yurtisigi,Rohan Mishra,Albina Borisevich,Patrick LeClair,Arunava Gupta###
(297744, 297744)
 Inaddition, the observed TMR vanishes for T<missing VAR>>200 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 350, '%', 2]

CeSb
###Possible Weyl fermions in the magnetic Kondo system CeSb|C. Y. Guo,C. Cao,M. Smidman,F. Wu,Y. J. Zhang,F. Steglich,F. C. Zhang,H. Q. Yuan###
(297843, 297844)
Possible Weyl fermions in the magnetic Kondo system CeSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CeSb
###Possible Weyl fermions in the magnetic Kondo system CeSb|C. Y. Guo,C. Cao,M. Smidman,F. Wu,Y. J. Zhang,F. Steglich,F. C. Zhang,H. Q. Yuan###
(298005, 298006)
 Here we report evidence for the presence of Weylfermions in the ferromagnetic state of the low-carrier density, stronglycorrelated Kondo lattice system CeSb, from electronic structure calculationsand angle-dependent magnetoresistance measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CeSb
###Possible Weyl fermions in the magnetic Kondo system CeSb|C. Y. Guo,C. Cao,M. Smidman,F. Wu,Y. J. Zhang,F. Steglich,F. C. Zhang,H. Q. Yuan###
(298106, 298107)
 These results give evidencefor CeSb belonging to a new class of Kondo lattice materials with Weyl fermionsin the ferromagnetic state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CuMnAsGaPCuMnAs
###First-principles spin-transfer torque in CuMnAs$|$GaP$|$CuMnAs junctions|Maria Stamenova,Razie Mohebbi,Jamileh Seyedyazdi,Ivan Rungger,Stefano Sanvito###
(298163, 298170)
First-principles spin-transfer torque in CuMnAsGaPCuMnAs junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0.25,0,0.125,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###First-principles spin-transfer torque in CuMnAs$|$GaP$|$CuMnAs junctions|Maria Stamenova,Razie Mohebbi,Jamileh Seyedyazdi,Ivan Rungger,Stefano Sanvito###
(298271, 298271)
 By using state-of-the-artdensity functional theory combined with quantum transport, we show that theNeel vector of the electrodes can be manipulated by spin-transfer torque.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###First-principles spin-transfer torque in CuMnAs$|$GaP$|$CuMnAs junctions|Maria Stamenova,Razie Mohebbi,Jamileh Seyedyazdi,Ivan Rungger,Stefano Sanvito###
(298330, 298330)
 At the same time the different magnetization states ofthe junction can be read by standard tunnelling magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CuMnAsGaPCuMnAs
###First-principles spin-transfer torque in CuMnAs$|$GaP$|$CuMnAs junctions|Maria Stamenova,Razie Mohebbi,Jamileh Seyedyazdi,Ivan Rungger,Stefano Sanvito###
(298377, 298384)
 Calculationsare performed for CuMnAsGaPCuMnAs junctions with different surfaceterminations between the anti-ferromagnetic CuMnAs electrodes and theinsulating GaP spacer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0.25,0,0.125,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CuMnAs
###First-principles spin-transfer torque in CuMnAs$|$GaP$|$CuMnAs junctions|Maria Stamenova,Razie Mohebbi,Jamileh Seyedyazdi,Ivan Rungger,Stefano Sanvito###
(298405, 298407)
 Calculationsare performed for CuMnAsGaPCuMnAs junctions with different surfaceterminations between the anti-ferromagnetic CuMnAs electrodes and theinsulating GaP spacer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaP
###First-principles spin-transfer torque in CuMnAs$|$GaP$|$CuMnAs junctions|Maria Stamenova,Razie Mohebbi,Jamileh Seyedyazdi,Ivan Rungger,Stefano Sanvito###
(298418, 298419)
 Calculationsare performed for CuMnAsGaPCuMnAs junctions with different surfaceterminations between the anti-ferromagnetic CuMnAs electrodes and theinsulating GaP spacer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###First-principles spin-transfer torque in CuMnAs$|$GaP$|$CuMnAs junctions|Maria Stamenova,Razie Mohebbi,Jamileh Seyedyazdi,Ivan Rungger,Stefano Sanvito###
(298424, 298424)
 In particular we find that the torque remains staggeredregardless of the termination, while the magnetoresistance depends on themicroscopic details of the interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TaTe2
###Anisotropic magneto-transport and magnetic properties of low temperature phase of TaTe2|Hongxiang Chen,Zhilin Li,Liwei Guo,Xiaolong Chen###
(298506, 298508)
Anisotropic magneto-transport and magnetic properties of low temperature phase of TaTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 140, '%', 3],[134.0, 3, 'K', 3],[137.0, 9, 'T', 3]

TaTe2
###Anisotropic magneto-transport and magnetic properties of low temperature phase of TaTe2|Hongxiang Chen,Zhilin Li,Liwei Guo,Xiaolong Chen###
(298511, 298513)
 TaTe2 is a quasi-2D<missing VAR> charge density wave (CD<missing VAR>W) compound with distorted-1T<missing VAR> typestructure exhibiting double-zigzag chains.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 140, '%', 2],[129.0, 3, 'K', 2],[132.0, 9, 'T', 2]

C
###Anisotropic magneto-transport and magnetic properties of low temperature phase of TaTe2|Hongxiang Chen,Zhilin Li,Liwei Guo,Xiaolong Chen###
(298531, 298531)
 TaTe2 is a quasi-2D<missing VAR> charge density wave (CD<missing VAR>W) compound with distorted-1T<missing VAR> typestructure exhibiting double-zigzag chains.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 140, '%', 2],[111.0, 3, 'K', 2],[114.0, 9, 'T', 2]

W
###Anisotropic magneto-transport and magnetic properties of low temperature phase of TaTe2|Hongxiang Chen,Zhilin Li,Liwei Guo,Xiaolong Chen###
(298533, 298533)
 TaTe2 is a quasi-2D<missing VAR> charge density wave (CD<missing VAR>W) compound with distorted-1T<missing VAR> typestructure exhibiting double-zigzag chains.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 140, '%', 2],[109.0, 3, 'K', 2],[112.0, 9, 'T', 2]

TaTe2
###Anisotropic magneto-transport and magnetic properties of low temperature phase of TaTe2|Hongxiang Chen,Zhilin Li,Liwei Guo,Xiaolong Chen###
(298584, 298586)
 Here we report the Fermi surfacetopology of low temperature phase of TaTe2 (LT-TaTe2) by anisotropicmagneto-transport and magnetic measurements on high-quality single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 140, '%', 1],[56.0, 3, 'K', 1],[59.0, 9, 'T', 1]

Te2
###Anisotropic magneto-transport and magnetic properties of low temperature phase of TaTe2|Hongxiang Chen,Zhilin Li,Liwei Guo,Xiaolong Chen###
(298593, 298594)
 Here we report the Fermi surfacetopology of low temperature phase of TaTe2 (LT-TaTe2) by anisotropicmagneto-transport and magnetic measurements on high-quality single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 140, '%', 1],[48.0, 3, 'K', 1],[51.0, 9, 'T', 1]

B
###Anisotropic magneto-transport and magnetic properties of low temperature phase of TaTe2|Hongxiang Chen,Zhilin Li,Liwei Guo,Xiaolong Chen###
(298702, 298702)
 Meanwhile, strong magnetic anisotropy was observed for B(001) and B//(001).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 140, '%', 1],[60.0, 3, 'K', 1],[57.0, 9, 'T', 1]

B
###Anisotropic magneto-transport and magnetic properties of low temperature phase of TaTe2|Hongxiang Chen,Zhilin Li,Liwei Guo,Xiaolong Chen###
(298711, 298711)
 Meanwhile, strong magnetic anisotropy was observed for B(001) and B//(001).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 140, '%', 1],[69.0, 3, 'K', 1],[66.0, 9, 'T', 1]

Si
###Unusual magneto-transport from Si-square nets in topological semimetal HfSiS|Nitesh Kumar,Kaustuv Manna,Yanpeng Qi,Shu-Chun Wu,Lei Wang,Binghai Yan,Claudia Felser,Chandra Shekhar###
(298790, 298790)
Unusual magneto-transport from Si-square nets in topological semimetal HfSiS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[201.0, 20, 'K', 5],[204.0, 7, 'T', 5],[302.0, 3, 'D', 6]

HfSiS
###Unusual magneto-transport from Si-square nets in topological semimetal HfSiS|Nitesh Kumar,Kaustuv Manna,Yanpeng Qi,Shu-Chun Wu,Lei Wang,Binghai Yan,Claudia Felser,Chandra Shekhar###
(298802, 298804)
Unusual magneto-transport from Si-square nets in topological semimetal HfSiS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[187.0, 20, 'K', 5],[190.0, 7, 'T', 5],[288.0, 3, 'D', 6]

In
###Unusual magneto-transport from Si-square nets in topological semimetal HfSiS|Nitesh Kumar,Kaustuv Manna,Yanpeng Qi,Shu-Chun Wu,Lei Wang,Binghai Yan,Claudia Felser,Chandra Shekhar###
(298872, 298872)
 In this letter, we reportthe Berry phase, Fermi surface topology and anisotropic magnetoresistance ofHfSiS which has recently been predicted to be a nodal line semimetal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 20, 'K', 2],[122.0, 7, 'T', 2],[220.0, 3, 'D', 3]

HfSiS
###Unusual magneto-transport from Si-square nets in topological semimetal HfSiS|Nitesh Kumar,Kaustuv Manna,Yanpeng Qi,Shu-Chun Wu,Lei Wang,Binghai Yan,Claudia Felser,Chandra Shekhar###
(298906, 298908)
 In this letter, we reportthe Berry phase, Fermi surface topology and anisotropic magnetoresistance ofHfSiS which has recently been predicted to be a nodal line semimetal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 20, 'K', 2],[86.0, 7, 'T', 2],[184.0, 3, 'D', 3]

Si
###Unusual magneto-transport from Si-square nets in topological semimetal HfSiS|Nitesh Kumar,Kaustuv Manna,Yanpeng Qi,Shu-Chun Wu,Lei Wang,Binghai Yan,Claudia Felser,Chandra Shekhar###
(299072, 299072)
 Massive amplitudes of de Haas-van Alphen and Shubnikov-de Haasoscillations up to 20 K in 7 T assist us in witnessing nontrivial pi-Berryphase which is a consequence of topological Dirac-type dispersion of bandsoriginating from the hybridization of px  py and dx2-y<missing VAR>2 orbitals of square-netplane of Si and Hf atoms, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 20, 'K', 0],[78.0, 7, 'T', 0],[20.0, 3, 'D', 1]

Hf
###Unusual magneto-transport from Si-square nets in topological semimetal HfSiS|Nitesh Kumar,Kaustuv Manna,Yanpeng Qi,Shu-Chun Wu,Lei Wang,Binghai Yan,Claudia Felser,Chandra Shekhar###
(299076, 299076)
 Massive amplitudes of de Haas-van Alphen and Shubnikov-de Haasoscillations up to 20 K in 7 T assist us in witnessing nontrivial pi-Berryphase which is a consequence of topological Dirac-type dispersion of bandsoriginating from the hybridization of px  py and dx2-y<missing VAR>2 orbitals of square-netplane of Si and Hf atoms, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 20, 'K', 0],[82.0, 7, 'T', 0],[16.0, 3, 'D', 1]

HfSiS
###Unusual magneto-transport from Si-square nets in topological semimetal HfSiS|Nitesh Kumar,Kaustuv Manna,Yanpeng Qi,Shu-Chun Wu,Lei Wang,Binghai Yan,Claudia Felser,Chandra Shekhar###
(299145, 299147)
 Furthermore, we establish the 3DFermi-surface which consists of very asymmetric water caltrop-like electron andbarley seed-like hole pockets which account for the anisotropicmagnetoresistance in HfSiS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 20, 'K', 1],[151.0, 7, 'T', 1],[53.0, 3, 'D', 0]

Y3Fe5O12
###Magnon Planar Hall Effect and Anisotropic Magnetoresistance in a Magnetic Insulator|J. Liu,L. J. Cornelissen,J. Shan,T. Kuschel,B. J. van Wees###
(299281, 299286)
 Here, we study the analogous anisotropicmagnetotransport behavior for magnons in a magnetic insulatorY3Fe5O12.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 5, '%', 3]

In
###Surface charge conductivity of topological insulator in a magnetic field: effect of hexagonal warping|R. S. Akzyanov,A. L. Rakhmanov###
(299656, 299656)
 In particular, it gives rise to thegrowth of the longitudinal conductivity with the increase of the disorder andanisotropic anomalous in-plane magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Strong magnetic field induces superconductivity in Weyl semi - metal|Baruch Rosenstein,B. Ya. Shapiro,Dingping Li,I. Shapiro###
(299923, 299923)
 It isshown that a Weyl semi-metal that is nonsuperconducting or having a smallcritical temperature Tc at zero field, might become a superconductor athigher temperature when the magnetic field is tuned to a series of quantizedvalues Hn<missing VAR>.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 2, 'D', 1]

Cd3As2
###Strong magnetic field induces superconductivity in Weyl semi - metal|Baruch Rosenstein,B. Ya. Shapiro,Dingping Li,I. Shapiro###
(300052, 300055)
 This has already been observed inCd3As2 and several other compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[239.0, 2, 'D', 5]

ZrTe5
###Strong magnetic field induces superconductivity in Weyl semi - metal|Baruch Rosenstein,B. Ya. Shapiro,Dingping Li,I. Shapiro###
(300087, 300089)
 The novel kind of quantumoscillations of magnetoresistance detected in ZrTe5 is discussed alongthese lines.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[274.0, 2, 'D', 6]

FeTe0.6Se0.4
###Enhanced superconductivity and anisotropy of FeTe0.6Se0.4 single crystals with Li-NH3 intercalation|Chenghe Li,Shanshan Sun,Shaohua Wang,Hechang Lei###
(300121, 300125)
Enhanced superconductivity and anisotropy of FeTe0.6Se0.4 single crystals with Li-NH3 intercalation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Li
###Enhanced superconductivity and anisotropy of FeTe0.6Se0.4 single crystals with Li-NH3 intercalation|Chenghe Li,Shanshan Sun,Shaohua Wang,Hechang Lei###
(300133, 300133)
Enhanced superconductivity and anisotropy of FeTe0.6Se0.4 single crystals with Li-NH3 intercalation.
Featurization terminated normally.
0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NH3
###Enhanced superconductivity and anisotropy of FeTe0.6Se0.4 single crystals with Li-NH3 intercalation|Chenghe Li,Shanshan Sun,Shaohua Wang,Hechang Lei###
(300135, 300137)
Enhanced superconductivity and anisotropy of FeTe0.6Se0.4 single crystals with Li-NH3 intercalation.
Featurization terminated normally.
0.75,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Li0.32(NH3)
###Enhanced superconductivity and anisotropy of FeTe0.6Se0.4 single crystals with Li-NH3 intercalation|Chenghe Li,Shanshan Sun,Shaohua Wang,Hechang Lei###
(300170, 300176)
 We report a systematic study of anisotropy resistivity, magnetoresistance andHall effect of Li0.32(NH3)y<missing VAR>Fe2Te1.2Se0.8 single crystals.
Featurization terminated normally.
0.6944444444444444,0,0.07407407407407407,0,0,0,0.23148148148148145,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe2Te1.2Se0.8
###Enhanced superconductivity and anisotropy of FeTe0.6Se0.4 single crystals with Li-NH3 intercalation|Chenghe Li,Shanshan Sun,Shaohua Wang,Hechang Lei###
(300178, 300183)
 We report a systematic study of anisotropy resistivity, magnetoresistance andHall effect of Li0.32(NH3)y<missing VAR>Fe2Te1.2Se0.8 single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeTe0.6Se0.4
###Enhanced superconductivity and anisotropy of FeTe0.6Se0.4 single crystals with Li-NH3 intercalation|Chenghe Li,Shanshan Sun,Shaohua Wang,Hechang Lei###
(300203, 300207)
 When compared to theparent compound FeTe0.6Se0.4, the Li-NH3 intercalation not only increases thesuperconducting transition temperature, but also enhances the electronicanisotropy in both normal and superconducting states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Li
###Enhanced superconductivity and anisotropy of FeTe0.6Se0.4 single crystals with Li-NH3 intercalation|Chenghe Li,Shanshan Sun,Shaohua Wang,Hechang Lei###
(300212, 300212)
 When compared to theparent compound FeTe0.6Se0.4, the Li-NH3 intercalation not only increases thesuperconducting transition temperature, but also enhances the electronicanisotropy in both normal and superconducting states.
Featurization terminated normally.
0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NH3
###Enhanced superconductivity and anisotropy of FeTe0.6Se0.4 single crystals with Li-NH3 intercalation|Chenghe Li,Shanshan Sun,Shaohua Wang,Hechang Lei###
(300214, 300216)
 When compared to theparent compound FeTe0.6Se0.4, the Li-NH3 intercalation not only increases thesuperconducting transition temperature, but also enhances the electronicanisotropy in both normal and superconducting states.
Featurization terminated normally.
0.75,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Enhanced superconductivity and anisotropy of FeTe0.6Se0.4 single crystals with Li-NH3 intercalation|Chenghe Li,Shanshan Sun,Shaohua Wang,Hechang Lei###
(300286, 300286)
 Moreover, in contrast tothe parent compound, the Hall coefficient R<missing VAR>H becomes negative at lowtemperature, indicating electron-type carriers are dominant due to Li doping.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Li
###Enhanced superconductivity and anisotropy of FeTe0.6Se0.4 single crystals with Li-NH3 intercalation|Chenghe Li,Shanshan Sun,Shaohua Wang,Hechang Lei###
(300316, 300316)
 Moreover, in contrast tothe parent compound, the Hall coefficient R<missing VAR>H becomes negative at lowtemperature, indicating electron-type carriers are dominant due to Li doping.
Featurization terminated normally.
0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Enhanced superconductivity and anisotropy of FeTe0.6Se0.4 single crystals with Li-NH3 intercalation|Chenghe Li,Shanshan Sun,Shaohua Wang,Hechang Lei###
(300340, 300340)
On the other hand, the sign reverse of R<missing VAR>H at high temperature and the failureof scaling behavior of magnetoresistance imply that hole pockets may be stillcrossing or just below the Fermi energy level, leading to the multibandbehavior in Li0.32(NH3)y<missing VAR>Fe2Te1.2Se0.8.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Li0.32(NH3)
###Enhanced superconductivity and anisotropy of FeTe0.6Se0.4 single crystals with Li-NH3 intercalation|Chenghe Li,Shanshan Sun,Shaohua Wang,Hechang Lei###
(300410, 300416)
On the other hand, the sign reverse of R<missing VAR>H at high temperature and the failureof scaling behavior of magnetoresistance imply that hole pockets may be stillcrossing or just below the Fermi energy level, leading to the multibandbehavior in Li0.32(NH3)y<missing VAR>Fe2Te1.2Se0.8.
Featurization terminated normally.
0.6944444444444444,0,0.07407407407407407,0,0,0,0.23148148148148145,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe2Te1.2Se0.8
###Enhanced superconductivity and anisotropy of FeTe0.6Se0.4 single crystals with Li-NH3 intercalation|Chenghe Li,Shanshan Sun,Shaohua Wang,Hechang Lei###
(300418, 300423)
On the other hand, the sign reverse of R<missing VAR>H at high temperature and the failureof scaling behavior of magnetoresistance imply that hole pockets may be stillcrossing or just below the Fermi energy level, leading to the multibandbehavior in Li0.32(NH3)y<missing VAR>Fe2Te1.2Se0.8.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(CNP)
###Magnetic-field driven ambipolar quantum Hall effect in epitaxial graphene close to the charge neutrality point|A. Nachawaty,M. Yang,W. Desrat,S. Nanot,B. Jabakhanji,D. Kazazis,R. Yakimova,A. Cresti,W. Escoffier,B. Jouault###
(300496, 300500)
 We have investigated the disorder of epitaxial graphene close to the chargeneutrality point (CNP) by various methods i) at room temperature, by analyzingthe dependence of the resistivity on the Hall coefficient ; ii) by fitting thetemperature dependence of the Hall coefficient down to liquid heliumtemperature; iii) by fitting the magnetoresistances at low temperature.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Magnetic-field driven ambipolar quantum Hall effect in epitaxial graphene close to the charge neutrality point|A. Nachawaty,M. Yang,W. Desrat,S. Nanot,B. Jabakhanji,D. Kazazis,R. Yakimova,A. Cresti,W. Escoffier,B. Jouault###
(300623, 300623)
 Allmethods converge to give a disorder amplitude of (20 pm 10) meV.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CNP
###Magnetic-field driven ambipolar quantum Hall effect in epitaxial graphene close to the charge neutrality point|A. Nachawaty,M. Yang,W. Desrat,S. Nanot,B. Jabakhanji,D. Kazazis,R. Yakimova,A. Cresti,W. Escoffier,B. Jouault###
(300646, 300648)
 Because ofthis relatively low disorder, close to the CNP, at low temperature, the sampleresistivity does not exhibit the standard value simeq h<missing VAR>/4e<missing VAR>2 but diverges.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SiC
###Magnetic-field driven ambipolar quantum Hall effect in epitaxial graphene close to the charge neutrality point|A. Nachawaty,M. Yang,W. Desrat,S. Nanot,B. Jabakhanji,D. Kazazis,R. Yakimova,A. Cresti,W. Escoffier,B. Jouault###
(300807, 300808)
However, we propose a model in which the SiC substrate steps qualitativelyexplain the ambipolar behavior.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Large magnetoresistance in type-II Weyl semimetal WP$_2$|Aifeng Wang,D. Graf,Yu Liu,Qianheng Du,Jiabao Zheng,Hechang Lei,C. Petrovic###
(300842, 300843)
Large magnetoresistance in type-II Weyl semimetal WP2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 14, ',', 2],[64.0, 300, '%', 2],[68.0, 2, 'K', 2],[71.0, 9, 'T', 2]

WP2
###Large magnetoresistance in type-II Weyl semimetal WP$_2$|Aifeng Wang,D. Graf,Yu Liu,Qianheng Du,Jiabao Zheng,Hechang Lei,C. Petrovic###
(300849, 300851)
Large magnetoresistance in type-II Weyl semimetal WP2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 14, ',', 2],[56.0, 300, '%', 2],[60.0, 2, 'K', 2],[63.0, 9, 'T', 2]

II
###Large magnetoresistance in type-II Weyl semimetal WP$_2$|Aifeng Wang,D. Graf,Yu Liu,Qianheng Du,Jiabao Zheng,Hechang Lei,C. Petrovic###
(300866, 300867)
 We report magnetotransport study on type-II Weyl semimetal WP2 singlecrystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 14, ',', 1],[40.0, 300, '%', 1],[44.0, 2, 'K', 1],[47.0, 9, 'T', 1]

WP2
###Large magnetoresistance in type-II Weyl semimetal WP$_2$|Aifeng Wang,D. Graf,Yu Liu,Qianheng Du,Jiabao Zheng,Hechang Lei,C. Petrovic###
(300873, 300875)
 We report magnetotransport study on type-II Weyl semimetal WP2 singlecrystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 14, ',', 1],[32.0, 300, '%', 1],[36.0, 2, 'K', 1],[39.0, 9, 'T', 1]

H
###Large magnetoresistance in type-II Weyl semimetal WP$_2$|Aifeng Wang,D. Graf,Yu Liu,Qianheng Du,Jiabao Zheng,Hechang Lei,C. Petrovic###
(300896, 300896)
 Magnetoresistance (MR) exhibits a nonsaturating Hn<missing VAR> fielddependence (14,300% at 2 K and 9 T) whereas systematic violation of Kohlers<missing VAR>rule was observed.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 14, ',', 0],[11.0, 300, '%', 0],[15.0, 2, 'K', 0],[18.0, 9, 'T', 0]

WP2
###Large magnetoresistance in type-II Weyl semimetal WP$_2$|Aifeng Wang,D. Graf,Yu Liu,Qianheng Du,Jiabao Zheng,Hechang Lei,C. Petrovic###
(301095, 301097)
 Even though crystal structure ofWP2 is not layered as in transition metal dichalcogenides, quantumoscillations suggest partial two-dimensional character.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[190.0, 14, ',', 4],[188.0, 300, '%', 4],[184.0, 2, 'K', 4],[181.0, 9, 'T', 4]

W
###Magnetoresistive sensors based on the elasticity of domain walls|Xueying Zhang,Nicolas Vernier,Zhiqiang Cao,Qunwen Leng,Anni Cao,Dafine Ravelosona,Weisheng Zhao###
(301294, 301294)
 Here, we propose a novel mechanism for thedesign of magnetoresistive sensors probing the perpendicular field bydetecting the expansion of the elastic magnetic Domain Wall (D<missing VAR>W) in the freelayer of a spin valve or a magnetic tunnel junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###A classical mechanism for negative magnetoresistance in two-dimensional systems in the ballistic regime|P. S. Alekseev,M. A. Semina###
(301508, 301508)
 In ultra-high quality two-dimensional (2D) materials the mean free paths ofphonons and electrons relative to all mechanisms of scattering can be muchgreater than a size of a sample.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 2, 'D', 2]

In
###A classical mechanism for negative magnetoresistance in two-dimensional systems in the ballistic regime|P. S. Alekseev,M. A. Semina###
(301578, 301578)
 In this case the most intensive type ofscattering of particles is their collisions with sample edges and the ballisticregime of heat and charge transport is realized.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 2, 'D', 1]

GaAs
###A classical mechanism for negative magnetoresistance in two-dimensional systems in the ballistic regime|P. S. Alekseev,M. A. Semina###
(301831, 301832)
 Our analysis demonstrates that,apparently, such mechanism explains the temperature-independent part of thegiant negative magnetoresistance recently observed in the ultra-high mobilityGaAs quantum wells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 2, 'D', 3]

B
###Strain induced changes of electronic properties of B-site ordered double perovskite Sr$_2$CoIrO$_6$ thin films|S. Esser,C. F. Chang,C. -Y. Kuo,S. Merten,V. Roddatis,T. D. Ha,A. Jesche,V. Moshnyaga,H. -J. Lin,A. Tanaka,C. T. Chen,L. H. Tjeng,P. Gegenwart###
(301861, 301861)
Strain induced changes of electronic properties of B-site ordered double perovskite Sr2CoIrO6 thin films.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 2, ',', 3]

Sr2CoIrO6
###Strain induced changes of electronic properties of B-site ordered double perovskite Sr$_2$CoIrO$_6$ thin films|S. Esser,C. F. Chang,C. -Y. Kuo,S. Merten,V. Roddatis,T. D. Ha,A. Jesche,V. Moshnyaga,H. -J. Lin,A. Tanaka,C. T. Chen,L. H. Tjeng,P. Gegenwart###
(301871, 301876)
Strain induced changes of electronic properties of B-site ordered double perovskite Sr2CoIrO6 thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 2, ',', 3]

B
###Strain induced changes of electronic properties of B-site ordered double perovskite Sr$_2$CoIrO$_6$ thin films|S. Esser,C. F. Chang,C. -Y. Kuo,S. Merten,V. Roddatis,T. D. Ha,A. Jesche,V. Moshnyaga,H. -J. Lin,A. Tanaka,C. T. Chen,L. H. Tjeng,P. Gegenwart###
(301883, 301883)
 B-site ordered thin films of double perovskite Sr2CoIrO6 wereepitaxially grown by a metal-organic aerosol deposition technique on varioussubstrates, actuating different strain states.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 2, ',', 2]

Sr2CoIrO6
###Strain induced changes of electronic properties of B-site ordered double perovskite Sr$_2$CoIrO$_6$ thin films|S. Esser,C. F. Chang,C. -Y. Kuo,S. Merten,V. Roddatis,T. D. Ha,A. Jesche,V. Moshnyaga,H. -J. Lin,A. Tanaka,C. T. Chen,L. H. Tjeng,P. Gegenwart###
(301899, 301904)
 B-site ordered thin films of double perovskite Sr2CoIrO6 wereepitaxially grown by a metal-organic aerosol deposition technique on varioussubstrates, actuating different strain states.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 2, ',', 2]

Co
###Strain induced changes of electronic properties of B-site ordered double perovskite Sr$_2$CoIrO$_6$ thin films|S. Esser,C. F. Chang,C. -Y. Kuo,S. Merten,V. Roddatis,T. D. Ha,A. Jesche,V. Moshnyaga,H. -J. Lin,A. Tanaka,C. T. Chen,L. H. Tjeng,P. Gegenwart###
(301994, 301994)
 Polarization dependent CoL<missing VAR>2,3 X<missing VAR>-ray absorption spectroscopy reveals a change of the magnetic easyaxis of the antiferromagnetically ordered (high-spin) Co3 sublatticewithin the strain series.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 2, ',', 0]

Co3
###Strain induced changes of electronic properties of B-site ordered double perovskite Sr$_2$CoIrO$_6$ thin films|S. Esser,C. F. Chang,C. -Y. Kuo,S. Merten,V. Roddatis,T. D. Ha,A. Jesche,V. Moshnyaga,H. -J. Lin,A. Tanaka,C. T. Chen,L. H. Tjeng,P. Gegenwart###
(302041, 302042)
 Polarization dependent CoL<missing VAR>2,3 X<missing VAR>-ray absorption spectroscopy reveals a change of the magnetic easyaxis of the antiferromagnetically ordered (high-spin) Co3 sublatticewithin the strain series.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 2, ',', 0]

CrI3
###Very Large Tunneling Magnetoresistance in Layered Magnetic Semiconductor CrI$_3$|Zhe Wang,Ignacio Gutiérrez-Lezama,Nicolas Ubrig,Martin Kroner,Marco Gibertini,Takashi Taniguchi,Kenji Watanabe,Ataç Imamoğlu,Enrico Giannini,Alberto F. Morpurgo###
(302177, 302179)
Very Large Tunneling Magnetoresistance in Layered Magnetic Semiconductor CrI3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 2, 'D', 1]

Cr2Ge2Te6
###Very Large Tunneling Magnetoresistance in Layered Magnetic Semiconductor CrI$_3$|Zhe Wang,Ignacio Gutiérrez-Lezama,Nicolas Ubrig,Martin Kroner,Marco Gibertini,Takashi Taniguchi,Kenji Watanabe,Ataç Imamoğlu,Enrico Giannini,Alberto F. Morpurgo###
(302240, 302245)
 Magnetic layered van der Waals crystals are an emerging class of materialsgiving access to new physical phenomena, as illustrated by the recentobservation of 2D ferromagnetism in Cr2Ge2Te6 and CrI3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 2, 'D', 0]

CrI3
###Very Large Tunneling Magnetoresistance in Layered Magnetic Semiconductor CrI$_3$|Zhe Wang,Ignacio Gutiérrez-Lezama,Nicolas Ubrig,Martin Kroner,Marco Gibertini,Takashi Taniguchi,Kenji Watanabe,Ataç Imamoğlu,Enrico Giannini,Alberto F. Morpurgo###
(302249, 302251)
 Magnetic layered van der Waals crystals are an emerging class of materialsgiving access to new physical phenomena, as illustrated by the recentobservation of 2D ferromagnetism in Cr2Ge2Te6 and CrI3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 2, 'D', 0]

CrI3
###Very Large Tunneling Magnetoresistance in Layered Magnetic Semiconductor CrI$_3$|Zhe Wang,Ignacio Gutiérrez-Lezama,Nicolas Ubrig,Martin Kroner,Marco Gibertini,Takashi Taniguchi,Kenji Watanabe,Ataç Imamoğlu,Enrico Giannini,Alberto F. Morpurgo###
(302309, 302311)
 Here we report first magneto-transport measurements onexfoliated CrI3 crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 2, 'D', 2]

W
###Giant Tunneling Magnetoresistance in Spin-Filter van der Waals Heterostructures|Tiancheng Song,Xinghan Cai,Matisse Wei-Yuan Tu,Xiaoou Zhang,Bevin Huang,Nathan P. Wilson,Kyle L. Seyler,Lin Zhu,Takashi Taniguchi,Kenji Watanabe,Michael A. McGuire,David H. Cobden,Di Xiao,Wang Yao,Xiaodong Xu###
(302621, 302621)
 Here we report novelmultiple-spin-filter magnetic tunnel junctions (sf-MTJs) based on van der Waals(vdW) heterostructures in which atomically thin chromium triiodide (CrI3) actsas a spin-filter tunnel barrier sandwiched between graphene contacts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 19, ',', 1],[86.0, 0, '%', 1]

(CrI3)
###Giant Tunneling Magnetoresistance in Spin-Filter van der Waals Heterostructures|Tiancheng Song,Xinghan Cai,Matisse Wei-Yuan Tu,Xiaoou Zhang,Bevin Huang,Nathan P. Wilson,Kyle L. Seyler,Lin Zhu,Takashi Taniguchi,Kenji Watanabe,Michael A. McGuire,David H. Cobden,Di Xiao,Wang Yao,Xiaodong Xu###
(302638, 302642)
 Here we report novelmultiple-spin-filter magnetic tunnel junctions (sf-MTJs) based on van der Waals(vdW) heterostructures in which atomically thin chromium triiodide (CrI3) actsas a spin-filter tunnel barrier sandwiched between graphene contacts.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 19, ',', 1],[65.0, 0, '%', 1]

CrI3
###Giant Tunneling Magnetoresistance in Spin-Filter van der Waals Heterostructures|Tiancheng Song,Xinghan Cai,Matisse Wei-Yuan Tu,Xiaoou Zhang,Bevin Huang,Nathan P. Wilson,Kyle L. Seyler,Lin Zhu,Takashi Taniguchi,Kenji Watanabe,Michael A. McGuire,David H. Cobden,Di Xiao,Wang Yao,Xiaodong Xu###
(302690, 302692)
 Wedemonstrate tunneling magnetoresistance which is drastically enhanced withincreasing CrI3 layer thickness, reaching a record 19,000% for magneticmultilayer structures using four-layer sf-MTJs at low temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 19, ',', 0],[15.0, 0, '%', 0]

W
###Giant Tunneling Magnetoresistance in Spin-Filter van der Waals Heterostructures|Tiancheng Song,Xinghan Cai,Matisse Wei-Yuan Tu,Xiaoou Zhang,Bevin Huang,Nathan P. Wilson,Kyle L. Seyler,Lin Zhu,Takashi Taniguchi,Kenji Watanabe,Michael A. McGuire,David H. Cobden,Di Xiao,Wang Yao,Xiaodong Xu###
(302788, 302788)
 Thesedevices also show multiple resistance states as a function of magnetic field,suggesting the potential for multi-bit functionalities using an individual vdWsf-MTJ.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 19, ',', 1],[81.0, 0, '%', 1]

CrI3
###Giant Tunneling Magnetoresistance in Spin-Filter van der Waals Heterostructures|Tiancheng Song,Xinghan Cai,Matisse Wei-Yuan Tu,Xiaoou Zhang,Bevin Huang,Nathan P. Wilson,Kyle L. Seyler,Lin Zhu,Takashi Taniguchi,Kenji Watanabe,Michael A. McGuire,David H. Cobden,Di Xiao,Wang Yao,Xiaodong Xu###
(302843, 302845)
 Using magnetic circular dichroism measurements, we attribute theseeffects to the intrinsic layer-by-layer antiferromagnetic ordering of theatomically thin CrI3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 19, ',', 2],[136.0, 0, '%', 2]

CrI3
###Giant Tunneling Magnetoresistance in Spin-Filter van der Waals Heterostructures|Tiancheng Song,Xinghan Cai,Matisse Wei-Yuan Tu,Xiaoou Zhang,Bevin Huang,Nathan P. Wilson,Kyle L. Seyler,Lin Zhu,Takashi Taniguchi,Kenji Watanabe,Michael A. McGuire,David H. Cobden,Di Xiao,Wang Yao,Xiaodong Xu###
(302884, 302886)
 Our work reveals the possibility to push magneticinformation storage to the atomically thin limit, and highlights CrI3 as asuperlative magnetic tunnel barrier for vdW heterostructure spintronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 19, ',', 3],[177.0, 0, '%', 3]

W
###Giant Tunneling Magnetoresistance in Spin-Filter van der Waals Heterostructures|Tiancheng Song,Xinghan Cai,Matisse Wei-Yuan Tu,Xiaoou Zhang,Bevin Huang,Nathan P. Wilson,Kyle L. Seyler,Lin Zhu,Takashi Taniguchi,Kenji Watanabe,Michael A. McGuire,David H. Cobden,Di Xiao,Wang Yao,Xiaodong Xu###
(302904, 302904)
 Our work reveals the possibility to push magneticinformation storage to the atomically thin limit, and highlights CrI3 as asuperlative magnetic tunnel barrier for vdW heterostructure spintronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[199.0, 19, ',', 3],[197.0, 0, '%', 3]

MoS2
###Two-dimensional Mott variable-range hopping transport in a disordered MoS$_2$ nanoflake|Jianhong Xue,Shaoyun Huang,Ji-Yin Wang,H. Q. Xu###
(302941, 302943)
Two-dimensional Mott variable-range hopping transport in a disordered MoS2 nanoflake.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[319.0, -1, ',', 5],[330.0, 2, 'D', 5]

MoS2
###Two-dimensional Mott variable-range hopping transport in a disordered MoS$_2$ nanoflake|Jianhong Xue,Shaoyun Huang,Ji-Yin Wang,H. Q. Xu###
(302960, 302962)
 The transport characteristics of a disordered MoS2 nanoflake in theinsulator regime are studied by electrical and magnetotransport measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[300.0, -1, ',', 4],[311.0, 2, 'D', 4]

MoS2
###Two-dimensional Mott variable-range hopping transport in a disordered MoS$_2$ nanoflake|Jianhong Xue,Shaoyun Huang,Ji-Yin Wang,H. Q. Xu###
(302995, 302997)
The layered MoS2 nanoflake is exfoliated from a bulk MoS2 crystal and theconductance G<missing VAR> and magnetoresistance are measured in a four-probe setup over awide range of temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[265.0, -1, ',', 3],[276.0, 2, 'D', 3]

MoS2
###Two-dimensional Mott variable-range hopping transport in a disordered MoS$_2$ nanoflake|Jianhong Xue,Shaoyun Huang,Ji-Yin Wang,H. Q. Xu###
(303011, 303013)
The layered MoS2 nanoflake is exfoliated from a bulk MoS2 crystal and theconductance G<missing VAR> and magnetoresistance are measured in a four-probe setup over awide range of temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[249.0, -1, ',', 3],[260.0, 2, 'D', 3]

At
###Two-dimensional Mott variable-range hopping transport in a disordered MoS$_2$ nanoflake|Jianhong Xue,Shaoyun Huang,Ji-Yin Wang,H. Q. Xu###
(303058, 303058)
 At high temperatures, we observe that log10G<missing VAR>exhibits a -T<missing VAR>-1 temperature dependence and the transport in the nanoflakedominantly arises from thermal activation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[204.0, -1, ',', 2],[215.0, 2, 'D', 2]

At
###Two-dimensional Mott variable-range hopping transport in a disordered MoS$_2$ nanoflake|Jianhong Xue,Shaoyun Huang,Ji-Yin Wang,H. Q. Xu###
(303113, 303113)
 At low temperatures, where thetransport in the nanoflake dominantly takes place via variable-range hopping(VR<missing VAR>H) processes, we observe that log10G<missing VAR> exhibits a -T<missing VAR>-1/3temperature dependence, an evidence for the two-dimensional (2D) Mott VR<missing VAR>Htransport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, -1, ',', 1],[160.0, 2, 'D', 1]

V
###Two-dimensional Mott variable-range hopping transport in a disordered MoS$_2$ nanoflake|Jianhong Xue,Shaoyun Huang,Ji-Yin Wang,H. Q. Xu###
(303149, 303149)
 At low temperatures, where thetransport in the nanoflake dominantly takes place via variable-range hopping(VR<missing VAR>H) processes, we observe that log10G<missing VAR> exhibits a -T<missing VAR>-1/3temperature dependence, an evidence for the two-dimensional (2D) Mott VR<missing VAR>Htransport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, -1, ',', 1],[124.0, 2, 'D', 1]

H
###Two-dimensional Mott variable-range hopping transport in a disordered MoS$_2$ nanoflake|Jianhong Xue,Shaoyun Huang,Ji-Yin Wang,H. Q. Xu###
(303151, 303151)
 At low temperatures, where thetransport in the nanoflake dominantly takes place via variable-range hopping(VR<missing VAR>H) processes, we observe that log10G<missing VAR> exhibits a -T<missing VAR>-1/3temperature dependence, an evidence for the two-dimensional (2D) Mott VR<missing VAR>Htransport.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, -1, ',', 1],[122.0, 2, 'D', 1]

V
###Two-dimensional Mott variable-range hopping transport in a disordered MoS$_2$ nanoflake|Jianhong Xue,Shaoyun Huang,Ji-Yin Wang,H. Q. Xu###
(303203, 303203)
 At low temperatures, where thetransport in the nanoflake dominantly takes place via variable-range hopping(VR<missing VAR>H) processes, we observe that log10G<missing VAR> exhibits a -T<missing VAR>-1/3temperature dependence, an evidence for the two-dimensional (2D) Mott VR<missing VAR>Htransport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, -1, ',', 1],[70.0, 2, 'D', 1]

H
###Two-dimensional Mott variable-range hopping transport in a disordered MoS$_2$ nanoflake|Jianhong Xue,Shaoyun Huang,Ji-Yin Wang,H. Q. Xu###
(303205, 303205)
 At low temperatures, where thetransport in the nanoflake dominantly takes place via variable-range hopping(VR<missing VAR>H) processes, we observe that log10G<missing VAR> exhibits a -T<missing VAR>-1/3temperature dependence, an evidence for the two-dimensional (2D) Mott VR<missing VAR>Htransport.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, -1, ',', 1],[68.0, 2, 'D', 1]

B2
###Two-dimensional Mott variable-range hopping transport in a disordered MoS$_2$ nanoflake|Jianhong Xue,Shaoyun Huang,Ji-Yin Wang,H. Q. Xu###
(303253, 303254)
 The measured low-field magnetoresistance of the nanoflake in theinsulator regime exhibits a quadratic magnetic field dependence sim alphaB2 with alphasim T<missing VAR>-1, fully consistent with the 2D Mott VR<missing VAR>H transportin the nanoflake.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, -1, ',', 0],[19.0, 2, 'D', 0]

V
###Two-dimensional Mott variable-range hopping transport in a disordered MoS$_2$ nanoflake|Jianhong Xue,Shaoyun Huang,Ji-Yin Wang,H. Q. Xu###
(303277, 303277)
 The measured low-field magnetoresistance of the nanoflake in theinsulator regime exhibits a quadratic magnetic field dependence sim alphaB2 with alphasim T<missing VAR>-1, fully consistent with the 2D Mott VR<missing VAR>H transportin the nanoflake.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, -1, ',', 0],[4.0, 2, 'D', 0]

H
###Two-dimensional Mott variable-range hopping transport in a disordered MoS$_2$ nanoflake|Jianhong Xue,Shaoyun Huang,Ji-Yin Wang,H. Q. Xu###
(303279, 303279)
 The measured low-field magnetoresistance of the nanoflake in theinsulator regime exhibits a quadratic magnetic field dependence sim alphaB2 with alphasim T<missing VAR>-1, fully consistent with the 2D Mott VR<missing VAR>H transportin the nanoflake.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, -1, ',', 0],[6.0, 2, 'D', 0]

Y2Ir2O7
###Negative longitudinal magnetoresistance in the density wave phase of Y$_2$Ir$_2$O$_7$|Abhishek Juyal,Amit Agarwal,Soumik Mukhopadhyay###
(303317, 303322)
Negative longitudinal magnetoresistance in the density wave phase of Y2Ir2O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6363636363636364,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Y2Ir2O7
###Negative longitudinal magnetoresistance in the density wave phase of Y$_2$Ir$_2$O$_7$|Abhishek Juyal,Amit Agarwal,Soumik Mukhopadhyay###
(303344, 303349)
 The ground state of nanowires of single crystalline PyrochloreY2Ir2O7 is a density wave.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6363636363636364,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Y2Ir2O7
###Negative longitudinal magnetoresistance in the density wave phase of Y$_2$Ir$_2$O$_7$|Abhishek Juyal,Amit Agarwal,Soumik Mukhopadhyay###
(303557, 303562)
 Ruling out several other possibilities weargue that this phenomenon is likely to be a consequence of the chiral anomalyin the gapped out Weyl semimetal phase in Y2Ir2O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6363636363636364,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###High-Field Magnetoresistance of Organic Semiconductors|G. Joshi,M. Y. Teferi,S. Jamali,M. Groesbeck,J. van Tol,R. McLaughlin,Z. V. Vardeny,J. M. Lupton,H. Malissa,C. Boehme###
(303690, 303690)
 In this work, we corroborate theoretical models for the high-fieldmagnetoresistance of organic semiconductors, in particular of diodes made ofthe conducting polymer poly(3,4-ethylenedioxythiophene)poly(styrene-sulfonate)(PEDOT<missing VAR>PSS) at low temperatures, by conducting magnetoresistance measurementsalong with multi-frequency continuous-wave electrically detected magneticresonance experiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 3, ',', 0]

P
###High-Field Magnetoresistance of Organic Semiconductors|G. Joshi,M. Y. Teferi,S. Jamali,M. Groesbeck,J. van Tol,R. McLaughlin,Z. V. Vardeny,J. M. Lupton,H. Malissa,C. Boehme###
(303759, 303759)
 In this work, we corroborate theoretical models for the high-fieldmagnetoresistance of organic semiconductors, in particular of diodes made ofthe conducting polymer poly(3,4-ethylenedioxythiophene)poly(styrene-sulfonate)(PEDOT<missing VAR>PSS) at low temperatures, by conducting magnetoresistance measurementsalong with multi-frequency continuous-wave electrically detected magneticresonance experiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 3, ',', 0]

O
###High-Field Magnetoresistance of Organic Semiconductors|G. Joshi,M. Y. Teferi,S. Jamali,M. Groesbeck,J. van Tol,R. McLaughlin,Z. V. Vardeny,J. M. Lupton,H. Malissa,C. Boehme###
(303762, 303762)
 In this work, we corroborate theoretical models for the high-fieldmagnetoresistance of organic semiconductors, in particular of diodes made ofthe conducting polymer poly(3,4-ethylenedioxythiophene)poly(styrene-sulfonate)(PEDOT<missing VAR>PSS) at low temperatures, by conducting magnetoresistance measurementsalong with multi-frequency continuous-wave electrically detected magneticresonance experiments.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 3, ',', 0]

S
###High-Field Magnetoresistance of Organic Semiconductors|G. Joshi,M. Y. Teferi,S. Jamali,M. Groesbeck,J. van Tol,R. McLaughlin,Z. V. Vardeny,J. M. Lupton,H. Malissa,C. Boehme###
(303766, 303766)
 In this work, we corroborate theoretical models for the high-fieldmagnetoresistance of organic semiconductors, in particular of diodes made ofthe conducting polymer poly(3,4-ethylenedioxythiophene)poly(styrene-sulfonate)(PEDOT<missing VAR>PSS) at low temperatures, by conducting magnetoresistance measurementsalong with multi-frequency continuous-wave electrically detected magneticresonance experiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 3, ',', 0]

(MoS2)
###Spin-Polarized Tunneling through Chemical Vapor Deposited Multilayer Molybdenum Disulfide|André Dankert,Parham Pashaei,M. Venkata Kamalakar,Anand P. S. Gaur,Satyaprakash Sahoo,Ivan Rungger,Awadhesh Narayan,Kapildeb Dolui,Anamul Hoque,Michel P. de Jong,Ram S. Katiyar,Stefano Sanvito,Saroj P. Dash###
(303947, 303951)
 The two-dimensional (2D) semiconductor molybdenum disulfide (MoS2) hasattracted widespread attention for its extraordinary electrical, optical, spinand valley related properties.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 75, 'K', 2],[295.0, 2, 'D', 5]

CV
###Spin-Polarized Tunneling through Chemical Vapor Deposited Multilayer Molybdenum Disulfide|André Dankert,Parham Pashaei,M. Venkata Kamalakar,Anand P. S. Gaur,Satyaprakash Sahoo,Ivan Rungger,Awadhesh Narayan,Kapildeb Dolui,Anamul Hoque,Michel P. de Jong,Ram S. Katiyar,Stefano Sanvito,Saroj P. Dash###
(304011, 304012)
 Here, we report on spin polarized tunnelingthrough chemical vapor deposited (CVD) multilayer MoS2 (7 nm) at roomtemperature in a vertically fabricated spin-valve device.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 75, 'K', 1],[234.0, 2, 'D', 4]

MoS2
###Spin-Polarized Tunneling through Chemical Vapor Deposited Multilayer Molybdenum Disulfide|André Dankert,Parham Pashaei,M. Venkata Kamalakar,Anand P. S. Gaur,Satyaprakash Sahoo,Ivan Rungger,Awadhesh Narayan,Kapildeb Dolui,Anamul Hoque,Michel P. de Jong,Ram S. Katiyar,Stefano Sanvito,Saroj P. Dash###
(304018, 304020)
 Here, we report on spin polarized tunnelingthrough chemical vapor deposited (CVD) multilayer MoS2 (7 nm) at roomtemperature in a vertically fabricated spin-valve device.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 75, 'K', 1],[226.0, 2, 'D', 4]

MoS2
###Spin-Polarized Tunneling through Chemical Vapor Deposited Multilayer Molybdenum Disulfide|André Dankert,Parham Pashaei,M. Venkata Kamalakar,Anand P. S. Gaur,Satyaprakash Sahoo,Ivan Rungger,Awadhesh Narayan,Kapildeb Dolui,Anamul Hoque,Michel P. de Jong,Ram S. Katiyar,Stefano Sanvito,Saroj P. Dash###
(304215, 304217)
 The detailedmeasurements at different temperatures and bias voltages, and densityfunctional theory calculations provide information about spin transportmechanisms in vertical multilayer MoS2 spin-valve devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 75, 'K', 2],[29.0, 2, 'D', 1]

Ga
###Magnetotransport in phase-separated (Ga,Fe)N with $γ$'-Ga$_y$Fe$_{4-y}$N nanocrystals|A. Navarro-Quezada,M. Aiglinger,B. Faina,K. Gas,M. Matzer,Tian Li,R. Adhikari,M. Sawicki,A. Bonanni###
(304287, 304287)
Magnetotransport in phase-separated (Ga,Fe)N with -Gay<missing VAR>Fe4-yN nanocrystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 0, ',', 1],[83.0, 2, ',', 1],[89.0, 300, ',', 1],[155.0, 50, ',', 2],[224.0, 25, ',', 3],[250.0, 1, ',', 3]

Fe
###Magnetotransport in phase-separated (Ga,Fe)N with $γ$'-Ga$_y$Fe$_{4-y}$N nanocrystals|A. Navarro-Quezada,M. Aiglinger,B. Faina,K. Gas,M. Matzer,Tian Li,R. Adhikari,M. Sawicki,A. Bonanni###
(304289, 304289)
Magnetotransport in phase-separated (Ga,Fe)N with -Gay<missing VAR>Fe4-yN nanocrystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 0, ',', 1],[81.0, 2, ',', 1],[87.0, 300, ',', 1],[153.0, 50, ',', 2],[222.0, 25, ',', 3],[248.0, 1, ',', 3]

N
###Magnetotransport in phase-separated (Ga,Fe)N with $γ$'-Ga$_y$Fe$_{4-y}$N nanocrystals|A. Navarro-Quezada,M. Aiglinger,B. Faina,K. Gas,M. Matzer,Tian Li,R. Adhikari,M. Sawicki,A. Bonanni###
(304291, 304291)
Magnetotransport in phase-separated (Ga,Fe)N with -Gay<missing VAR>Fe4-yN nanocrystals.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 0, ',', 1],[79.0, 2, ',', 1],[85.0, 300, ',', 1],[151.0, 50, ',', 2],[220.0, 25, ',', 3],[246.0, 1, ',', 3]

Ga
###Magnetotransport in phase-separated (Ga,Fe)N with $γ$'-Ga$_y$Fe$_{4-y}$N nanocrystals|A. Navarro-Quezada,M. Aiglinger,B. Faina,K. Gas,M. Matzer,Tian Li,R. Adhikari,M. Sawicki,A. Bonanni###
(304296, 304296)
Magnetotransport in phase-separated (Ga,Fe)N with -Gay<missing VAR>Fe4-yN nanocrystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 0, ',', 1],[74.0, 2, ',', 1],[80.0, 300, ',', 1],[146.0, 50, ',', 2],[215.0, 25, ',', 3],[241.0, 1, ',', 3]

Fe4-yN
###Magnetotransport in phase-separated (Ga,Fe)N with $γ$'-Ga$_y$Fe$_{4-y}$N nanocrystals|A. Navarro-Quezada,M. Aiglinger,B. Faina,K. Gas,M. Matzer,Tian Li,R. Adhikari,M. Sawicki,A. Bonanni###
(304298, 304302)
Magnetotransport in phase-separated (Ga,Fe)N with -Gay<missing VAR>Fe4-yN nanocrystals.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[36.0, 0, ',', 1],[68.0, 2, ',', 1],[74.0, 300, ',', 1],[140.0, 50, ',', 2],[209.0, 25, ',', 3],[235.0, 1, ',', 3]

Ga
###Magnetotransport in phase-separated (Ga,Fe)N with $γ$'-Ga$_y$Fe$_{4-y}$N nanocrystals|A. Navarro-Quezada,M. Aiglinger,B. Faina,K. Gas,M. Matzer,Tian Li,R. Adhikari,M. Sawicki,A. Bonanni###
(304318, 304318)
 The magnetotransport in phase-separated (Ga,Fe)N containinggamma-Gay<missing VAR>Fe4-yN (0,<,y<missing VAR>,<1) nanocrystals (NCs) is studied inthe temperature range between 2,K and 300,K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 0, ',', 0],[52.0, 2, ',', 0],[58.0, 300, ',', 0],[124.0, 50, ',', 1],[193.0, 25, ',', 2],[219.0, 1, ',', 2]

Fe
###Magnetotransport in phase-separated (Ga,Fe)N with $γ$'-Ga$_y$Fe$_{4-y}$N nanocrystals|A. Navarro-Quezada,M. Aiglinger,B. Faina,K. Gas,M. Matzer,Tian Li,R. Adhikari,M. Sawicki,A. Bonanni###
(304320, 304320)
 The magnetotransport in phase-separated (Ga,Fe)N containinggamma-Gay<missing VAR>Fe4-yN (0,<,y<missing VAR>,<1) nanocrystals (NCs) is studied inthe temperature range between 2,K and 300,K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 0, ',', 0],[50.0, 2, ',', 0],[56.0, 300, ',', 0],[122.0, 50, ',', 1],[191.0, 25, ',', 2],[217.0, 1, ',', 2]

N
###Magnetotransport in phase-separated (Ga,Fe)N with $γ$'-Ga$_y$Fe$_{4-y}$N nanocrystals|A. Navarro-Quezada,M. Aiglinger,B. Faina,K. Gas,M. Matzer,Tian Li,R. Adhikari,M. Sawicki,A. Bonanni###
(304322, 304322)
 The magnetotransport in phase-separated (Ga,Fe)N containinggamma-Gay<missing VAR>Fe4-yN (0,<,y<missing VAR>,<1) nanocrystals (NCs) is studied inthe temperature range between 2,K and 300,K.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 0, ',', 0],[48.0, 2, ',', 0],[54.0, 300, ',', 0],[120.0, 50, ',', 1],[189.0, 25, ',', 2],[215.0, 1, ',', 2]

Ga
###Magnetotransport in phase-separated (Ga,Fe)N with $γ$'-Ga$_y$Fe$_{4-y}$N nanocrystals|A. Navarro-Quezada,M. Aiglinger,B. Faina,K. Gas,M. Matzer,Tian Li,R. Adhikari,M. Sawicki,A. Bonanni###
(304329, 304329)
 The magnetotransport in phase-separated (Ga,Fe)N containinggamma-Gay<missing VAR>Fe4-yN (0,<,y<missing VAR>,<1) nanocrystals (NCs) is studied inthe temperature range between 2,K and 300,K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 0, ',', 0],[41.0, 2, ',', 0],[47.0, 300, ',', 0],[113.0, 50, ',', 1],[182.0, 25, ',', 2],[208.0, 1, ',', 2]

Fe4-yN
###Magnetotransport in phase-separated (Ga,Fe)N with $γ$'-Ga$_y$Fe$_{4-y}$N nanocrystals|A. Navarro-Quezada,M. Aiglinger,B. Faina,K. Gas,M. Matzer,Tian Li,R. Adhikari,M. Sawicki,A. Bonanni###
(304331, 304335)
 The magnetotransport in phase-separated (Ga,Fe)N containinggamma-Gay<missing VAR>Fe4-yN (0,<,y<missing VAR>,<1) nanocrystals (NCs) is studied inthe temperature range between 2,K and 300,K.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[3.0, 0, ',', 0],[35.0, 2, ',', 0],[41.0, 300, ',', 0],[107.0, 50, ',', 1],[176.0, 25, ',', 2],[202.0, 1, ',', 2]

(NCs)
###Magnetotransport in phase-separated (Ga,Fe)N with $γ$'-Ga$_y$Fe$_{4-y}$N nanocrystals|A. Navarro-Quezada,M. Aiglinger,B. Faina,K. Gas,M. Matzer,Tian Li,R. Adhikari,M. Sawicki,A. Bonanni###
(304350, 304353)
 The magnetotransport in phase-separated (Ga,Fe)N containinggamma-Gay<missing VAR>Fe4-yN (0,<,y<missing VAR>,<1) nanocrystals (NCs) is studied inthe temperature range between 2,K and 300,K.
Featurization successful!
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 0, ',', 0],[17.0, 2, ',', 0],[23.0, 300, ',', 0],[89.0, 50, ',', 1],[158.0, 25, ',', 2],[184.0, 1, ',', 2]

K
###Magnetotransport in phase-separated (Ga,Fe)N with $γ$'-Ga$_y$Fe$_{4-y}$N nanocrystals|A. Navarro-Quezada,M. Aiglinger,B. Faina,K. Gas,M. Matzer,Tian Li,R. Adhikari,M. Sawicki,A. Bonanni###
(304372, 304372)
 The magnetotransport in phase-separated (Ga,Fe)N containinggamma-Gay<missing VAR>Fe4-yN (0,<,y<missing VAR>,<1) nanocrystals (NCs) is studied inthe temperature range between 2,K and 300,K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 0, ',', 0],[2.0, 2, ',', 0],[4.0, 300, ',', 0],[70.0, 50, ',', 1],[139.0, 25, ',', 2],[165.0, 1, ',', 2]

K
###Magnetotransport in phase-separated (Ga,Fe)N with $γ$'-Ga$_y$Fe$_{4-y}$N nanocrystals|A. Navarro-Quezada,M. Aiglinger,B. Faina,K. Gas,M. Matzer,Tian Li,R. Adhikari,M. Sawicki,A. Bonanni###
(304378, 304378)
 The magnetotransport in phase-separated (Ga,Fe)N containinggamma-Gay<missing VAR>Fe4-yN (0,<,y<missing VAR>,<1) nanocrystals (NCs) is studied inthe temperature range between 2,K and 300,K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 0, ',', 0],[8.0, 2, ',', 0],[2.0, 300, ',', 0],[64.0, 50, ',', 1],[133.0, 25, ',', 2],[159.0, 1, ',', 2]

K
###Magnetotransport in phase-separated (Ga,Fe)N with $γ$'-Ga$_y$Fe$_{4-y}$N nanocrystals|A. Navarro-Quezada,M. Aiglinger,B. Faina,K. Gas,M. Matzer,Tian Li,R. Adhikari,M. Sawicki,A. Bonanni###
(304444, 304444)
 The evolution of the resistivityand of the magnetoresistance (MR) as a function of temperature points at twoconduction mechanisms namely a conventional Arrhenius-type one down to 50,K,and Mott variable range hopping at lower temperatures, where the spin-polarizedcurrent is transported between NCs in a regime in which phonon-scatteringeffects are not dominant.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 0, ',', 1],[74.0, 2, ',', 1],[68.0, 300, ',', 1],[2.0, 50, ',', 0],[67.0, 25, ',', 1],[93.0, 1, ',', 1]

NCs
###Magnetotransport in phase-separated (Ga,Fe)N with $γ$'-Ga$_y$Fe$_{4-y}$N nanocrystals|A. Navarro-Quezada,M. Aiglinger,B. Faina,K. Gas,M. Matzer,Tian Li,R. Adhikari,M. Sawicki,A. Bonanni###
(304482, 304483)
 The evolution of the resistivityand of the magnetoresistance (MR) as a function of temperature points at twoconduction mechanisms namely a conventional Arrhenius-type one down to 50,K,and Mott variable range hopping at lower temperatures, where the spin-polarizedcurrent is transported between NCs in a regime in which phonon-scatteringeffects are not dominant.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 0, ',', 1],[112.0, 2, ',', 1],[106.0, 300, ',', 1],[40.0, 50, ',', 0],[28.0, 25, ',', 1],[54.0, 1, ',', 1]

K
###Magnetotransport in phase-separated (Ga,Fe)N with $γ$'-Ga$_y$Fe$_{4-y}$N nanocrystals|A. Navarro-Quezada,M. Aiglinger,B. Faina,K. Gas,M. Matzer,Tian Li,R. Adhikari,M. Sawicki,A. Bonanni###
(304513, 304513)
 Below 25,K, the MR shows a hysteretic contributionat magnetic fields <1,T<missing VAR> and proportional to the coercive field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 0, ',', 2],[143.0, 2, ',', 2],[137.0, 300, ',', 2],[71.0, 50, ',', 1],[2.0, 25, ',', 0],[24.0, 1, ',', 0]

Fe4N
###Magnetotransport in phase-separated (Ga,Fe)N with $γ$'-Ga$_y$Fe$_{4-y}$N nanocrystals|A. Navarro-Quezada,M. Aiglinger,B. Faina,K. Gas,M. Matzer,Tian Li,R. Adhikari,M. Sawicki,A. Bonanni###
(304586, 304588)
 Anisotropicmagnetoresistance with values one order of magnitude greater than thosepreviously reported for gamma-Fe4N thin films over the whole consideredtemperature range, confirms that the observed MR in these layers is determinedby the embedded nanocrystals.
Featurization terminated normally.
0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[248.0, 0, ',', 3],[216.0, 2, ',', 3],[210.0, 300, ',', 3],[144.0, 50, ',', 2],[75.0, 25, ',', 1],[49.0, 1, ',', 1]

In
###Asymmetry-induced effects in Kondo quantum dots coupled to ferromagnetic leads|K. P. Wojcik,I. Weymann,J. Barnas###
(304790, 304790)
 In the parallel magnetic configuration of the device theKondo effect is generally suppressed due to the presence of exchange field,irrespective of systems<missing VAR> asymmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Asymmetry-induced effects in Kondo quantum dots coupled to ferromagnetic leads|K. P. Wojcik,I. Weymann,J. Barnas###
(304845, 304845)
 In the antiparallel configuration, on theother hand, the Kondo effect can develop if the system is symmetric.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Asymmetry-induced effects in Kondo quantum dots coupled to ferromagnetic leads|K. P. Wojcik,I. Weymann,J. Barnas###
(304951, 304951)
 In addition, by using thesecond-order perturbation theory we derive general formulas for the exchangefield in both magnetic configurations of the system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TaN
###Observation of the ghost critical field for superconducting fluctuations in a disordered TaN thin film|Nicholas P. Breznay,Aharon Kapitulnik###
(305035, 305036)
Observation of the ghost critical field for superconducting fluctuations in a disordered TaN thin film.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Observation of the ghost critical field for superconducting fluctuations in a disordered TaN thin film|Nicholas P. Breznay,Aharon Kapitulnik###
(305060, 305060)
 We experimentally study the ghost critical field (G<missing VAR>CF), a magnetic fieldscale for the suppression of superconducting fluctuations, using Hall effectand magnetoresistance measurements on a disordered superconducting thin filmnear its transition temperature Tc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CF
###Observation of the ghost critical field for superconducting fluctuations in a disordered TaN thin film|Nicholas P. Breznay,Aharon Kapitulnik###
(305229, 305230)
 Such amaximum has been observed in studies of the Nernst effect and identified as theG<missing VAR>CF.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CF
###Observation of the ghost critical field for superconducting fluctuations in a disordered TaN thin film|Nicholas P. Breznay,Aharon Kapitulnik###
(305279, 305280)
 Magnetoresistance measurements near Tc indicate quenching ofsuperconducting fluctuations, agree with established theoretical descriptions,and allow us to extract the G<missing VAR>CF and other parameters.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CF
###Observation of the ghost critical field for superconducting fluctuations in a disordered TaN thin film|Nicholas P. Breznay,Aharon Kapitulnik###
(305314, 305315)
 Above Tc the Hall peakfield is quantitatively distinct from the G<missing VAR>CF, and we contrast this findingwith ongoing studies of the Nernst effect and superconducting fluctuations inunconventional and thin-film superconductors.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe2Co1-x
###Half-metallicity and anisotropy magnetoresistance properties of Heusler alloys Fe2Co1-xCrxSi|Y. Du,G. Z. Xu,E. K. Liu,G. J. Li,H. G. Zhang,S. Y. Yu,W. H. Wang,G. H. Wu###
(305389, 305394)
Half-metallicity and anisotropy magnetoresistance properties of Heusler alloys Fe2Co1-xCrxSi.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[141.0, 0.75, 'eV', 2],[308.0, 0.25, ',', 5],[311.0, 0.5, ',', 5]

Si
###Half-metallicity and anisotropy magnetoresistance properties of Heusler alloys Fe2Co1-xCrxSi|Y. Du,G. Z. Xu,E. K. Liu,G. J. Li,H. G. Zhang,S. Y. Yu,W. H. Wang,G. H. Wu###
(305396, 305396)
Half-metallicity and anisotropy magnetoresistance properties of Heusler alloys Fe2Co1-xCrxSi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 0.75, 'eV', 2],[306.0, 0.25, ',', 5],[309.0, 0.5, ',', 5]

In
###Half-metallicity and anisotropy magnetoresistance properties of Heusler alloys Fe2Co1-xCrxSi|Y. Du,G. Z. Xu,E. K. Liu,G. J. Li,H. G. Zhang,S. Y. Yu,W. H. Wang,G. H. Wu###
(305399, 305399)
 In this paper, we investigate the half-metallicity of Heusler alloysFe2Co1-xCrxSi by first principles calculations and anisotropy magnetoresistancemeasurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 0.75, 'eV', 1],[303.0, 0.25, ',', 4],[306.0, 0.5, ',', 4]

Fe2Co1-x
###Half-metallicity and anisotropy magnetoresistance properties of Heusler alloys Fe2Co1-xCrxSi|Y. Du,G. Z. Xu,E. K. Liu,G. J. Li,H. G. Zhang,S. Y. Yu,W. H. Wang,G. H. Wu###
(305423, 305428)
 In this paper, we investigate the half-metallicity of Heusler alloysFe2Co1-xCrxSi by first principles calculations and anisotropy magnetoresistancemeasurements.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[107.0, 0.75, 'eV', 1],[274.0, 0.25, ',', 4],[277.0, 0.5, ',', 4]

Si
###Half-metallicity and anisotropy magnetoresistance properties of Heusler alloys Fe2Co1-xCrxSi|Y. Du,G. Z. Xu,E. K. Liu,G. J. Li,H. G. Zhang,S. Y. Yu,W. H. Wang,G. H. Wu###
(305430, 305430)
 In this paper, we investigate the half-metallicity of Heusler alloysFe2Co1-xCrxSi by first principles calculations and anisotropy magnetoresistancemeasurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 0.75, 'eV', 1],[272.0, 0.25, ',', 4],[275.0, 0.5, ',', 4]

Cr
###Half-metallicity and anisotropy magnetoresistance properties of Heusler alloys Fe2Co1-xCrxSi|Y. Du,G. Z. Xu,E. K. Liu,G. J. Li,H. G. Zhang,S. Y. Yu,W. H. Wang,G. H. Wu###
(305467, 305467)
 It is found that, with the increase of Cr content x<missing VAR>, the Fermilevel of Fe2Co1-xCrxSi moves from the top of valence band to the bottom ofconduction band, and a large half-metallic band gap of 0.75 eV is obtained forx<missing VAR>0.75.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 0.75, 'eV', 0],[235.0, 0.25, ',', 3],[238.0, 0.5, ',', 3]

Fe2Co1-x
###Half-metallicity and anisotropy magnetoresistance properties of Heusler alloys Fe2Co1-xCrxSi|Y. Du,G. Z. Xu,E. K. Liu,G. J. Li,H. G. Zhang,S. Y. Yu,W. H. Wang,G. H. Wu###
(305483, 305488)
 It is found that, with the increase of Cr content x<missing VAR>, the Fermilevel of Fe2Co1-xCrxSi moves from the top of valence band to the bottom ofconduction band, and a large half-metallic band gap of 0.75 eV is obtained forx<missing VAR>0.75.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[47.0, 0.75, 'eV', 0],[214.0, 0.25, ',', 3],[217.0, 0.5, ',', 3]

Si
###Half-metallicity and anisotropy magnetoresistance properties of Heusler alloys Fe2Co1-xCrxSi|Y. Du,G. Z. Xu,E. K. Liu,G. J. Li,H. G. Zhang,S. Y. Yu,W. H. Wang,G. H. Wu###
(305490, 305490)
 It is found that, with the increase of Cr content x<missing VAR>, the Fermilevel of Fe2Co1-xCrxSi moves from the top of valence band to the bottom ofconduction band, and a large half-metallic band gap of 0.75 eV is obtained forx<missing VAR>0.75.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 0.75, 'eV', 0],[212.0, 0.25, ',', 3],[215.0, 0.5, ',', 3]

Fe2Co1-x
###Half-metallicity and anisotropy magnetoresistance properties of Heusler alloys Fe2Co1-xCrxSi|Y. Du,G. Z. Xu,E. K. Liu,G. J. Li,H. G. Zhang,S. Y. Yu,W. H. Wang,G. H. Wu###
(305562, 305567)
 We then successfully synthesized a series Heusler Fe2Co1-xCrxSipolycrystalline ribbon samples.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[27.0, 0.75, 'eV', 1],[135.0, 0.25, ',', 2],[138.0, 0.5, ',', 2]

Si
###Half-metallicity and anisotropy magnetoresistance properties of Heusler alloys Fe2Co1-xCrxSi|Y. Du,G. Z. Xu,E. K. Liu,G. J. Li,H. G. Zhang,S. Y. Yu,W. H. Wang,G. H. Wu###
(305569, 305569)
 We then successfully synthesized a series Heusler Fe2Co1-xCrxSipolycrystalline ribbon samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 0.75, 'eV', 1],[133.0, 0.25, ',', 2],[136.0, 0.5, ',', 2]

Fe2Co1-x
###Half-metallicity and anisotropy magnetoresistance properties of Heusler alloys Fe2Co1-xCrxSi|Y. Du,G. Z. Xu,E. K. Liu,G. J. Li,H. G. Zhang,S. Y. Yu,W. H. Wang,G. H. Wu###
(305598, 305603)
 The results of X<missing VAR>-ray diffraction indicate thatthe Fe2Co1-xCrxSi series of samples are pure phase with a high degree of orderand the saturation magnetic moment follows half-metallic Slater-Pauling rule.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[63.0, 0.75, 'eV', 2],[99.0, 0.25, ',', 1],[102.0, 0.5, ',', 1]

Si
###Half-metallicity and anisotropy magnetoresistance properties of Heusler alloys Fe2Co1-xCrxSi|Y. Du,G. Z. Xu,E. K. Liu,G. J. Li,H. G. Zhang,S. Y. Yu,W. H. Wang,G. H. Wu###
(305605, 305605)
 The results of X<missing VAR>-ray diffraction indicate thatthe Fe2Co1-xCrxSi series of samples are pure phase with a high degree of orderand the saturation magnetic moment follows half-metallic Slater-Pauling rule.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 0.75, 'eV', 2],[97.0, 0.25, ',', 1],[100.0, 0.5, ',', 1]

Fe2CoSi
###Half-metallicity and anisotropy magnetoresistance properties of Heusler alloys Fe2Co1-xCrxSi|Y. Du,G. Z. Xu,E. K. Liu,G. J. Li,H. G. Zhang,S. Y. Yu,W. H. Wang,G. H. Wu###
(305669, 305672)
Except for the two end members, Fe2CoSi and Fe2CrSi, the anisotropicmagnetoresistance of Fe2Co1-xCrxSi (x<missing VAR>0.25, 0.5, 0.75) show a negative valuesuggesting they are stable half-metallic ferromagnets.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0.5,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 0.75, 'eV', 3],[30.0, 0.25, ',', 0],[33.0, 0.5, ',', 0]

Fe2CrSi
###Half-metallicity and anisotropy magnetoresistance properties of Heusler alloys Fe2Co1-xCrxSi|Y. Du,G. Z. Xu,E. K. Liu,G. J. Li,H. G. Zhang,S. Y. Yu,W. H. Wang,G. H. Wu###
(305676, 305679)
Except for the two end members, Fe2CoSi and Fe2CrSi, the anisotropicmagnetoresistance of Fe2Co1-xCrxSi (x<missing VAR>0.25, 0.5, 0.75) show a negative valuesuggesting they are stable half-metallic ferromagnets.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.25,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 0.75, 'eV', 3],[23.0, 0.25, ',', 0],[26.0, 0.5, ',', 0]

Fe2Co1-x
###Half-metallicity and anisotropy magnetoresistance properties of Heusler alloys Fe2Co1-xCrxSi|Y. Du,G. Z. Xu,E. K. Liu,G. J. Li,H. G. Zhang,S. Y. Yu,W. H. Wang,G. H. Wu###
(305691, 305696)
Except for the two end members, Fe2CoSi and Fe2CrSi, the anisotropicmagnetoresistance of Fe2Co1-xCrxSi (x<missing VAR>0.25, 0.5, 0.75) show a negative valuesuggesting they are stable half-metallic ferromagnets.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[156.0, 0.75, 'eV', 3],[6.0, 0.25, ',', 0],[9.0, 0.5, ',', 0]

Si
###Half-metallicity and anisotropy magnetoresistance properties of Heusler alloys Fe2Co1-xCrxSi|Y. Du,G. Z. Xu,E. K. Liu,G. J. Li,H. G. Zhang,S. Y. Yu,W. H. Wang,G. H. Wu###
(305698, 305698)
Except for the two end members, Fe2CoSi and Fe2CrSi, the anisotropicmagnetoresistance of Fe2Co1-xCrxSi (x<missing VAR>0.25, 0.5, 0.75) show a negative valuesuggesting they are stable half-metallic ferromagnets.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 0.75, 'eV', 3],[4.0, 0.25, ',', 0],[7.0, 0.5, ',', 0]

CoPtMgOPt
###Large Tunneling Anisotropic Magneto-Seebeck Effect in a CoPt|MgO|Pt Tunnel Junction|V. P. Amin,J. Zemen,J. Železný,T. Jungwirth,Jairo Sinova###
(305759, 305763)
Large Tunneling Anisotropic Magneto-Seebeck Effect in a CoPtMgOPt Tunnel Junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0.2,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 175, '%', 3]

CoPtMgOPt
###Large Tunneling Anisotropic Magneto-Seebeck Effect in a CoPt|MgO|Pt Tunnel Junction|V. P. Amin,J. Zemen,J. Železný,T. Jungwirth,Jairo Sinova###
(305797, 305801)
 We theoretically investigate the Tunneling Anisotropic Magneto-Seebeck effectin a realistically-modeled CoPtMgOPt tunnel junction using coherent transportcalculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0.2,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 175, '%', 2]

CoPtMgOCoPt
###Large Tunneling Anisotropic Magneto-Seebeck Effect in a CoPt|MgO|Pt Tunnel Junction|V. P. Amin,J. Zemen,J. Železný,T. Jungwirth,Jairo Sinova###
(305838, 305843)
 For comparison we study the tunneling magneto-Seebeck effect inCoPtMgOCoPt as well.
Featurization terminated normally.
0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 175, '%', 1]

CoPtMgOPt
###Large Tunneling Anisotropic Magneto-Seebeck Effect in a CoPt|MgO|Pt Tunnel Junction|V. P. Amin,J. Zemen,J. Železný,T. Jungwirth,Jairo Sinova###
(305866, 305870)
 We find that the magneto-Seebeck ratio of CoPtMgOPtexceeds that of CoPtMgOCoPt for small barrier thicknesses, reaching 175% atroom temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0.2,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 175, '%', 0]

CoPtMgOCoPt
###Large Tunneling Anisotropic Magneto-Seebeck Effect in a CoPt|MgO|Pt Tunnel Junction|V. P. Amin,J. Zemen,J. Železný,T. Jungwirth,Jairo Sinova###
(305879, 305884)
 We find that the magneto-Seebeck ratio of CoPtMgOPtexceeds that of CoPtMgOCoPt for small barrier thicknesses, reaching 175% atroom temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 175, '%', 0]

CoPtMgOPt
###Large Tunneling Anisotropic Magneto-Seebeck Effect in a CoPt|MgO|Pt Tunnel Junction|V. P. Amin,J. Zemen,J. Železný,T. Jungwirth,Jairo Sinova###
(306051, 306055)
 We reportthat this difference in origin allows for CoPtMgOPt to possess strong thermalmagnetic-transport anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0.2,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 175, '%', 4]

SiC
###Magnetoresistance of disordered graphene: from low to high temperatures|B. Jabakhanji,D. Kazazis,W. Desrat,A. Michon,M. Portail,B. Jouault###
(306139, 306140)
 We present the magnetoresistance (MR) of highly doped monolayer graphenelayers grown by chemical vapor deposition on 6H-SiC.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 6, 'H', 0],[29.0, 1.7, 'K', 1]

K
###Magnetoresistance of disordered graphene: from low to high temperatures|B. Jabakhanji,D. Kazazis,W. Desrat,A. Michon,M. Portail,B. Jouault###
(306204, 306204)
 The MR exhibits a maximum in the temperature range 120-240 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 6, 'H', 2],[35.0, 1.7, 'K', 1]

B2
###Magnetoresistance of disordered graphene: from low to high temperatures|B. Jabakhanji,D. Kazazis,W. Desrat,A. Michon,M. Portail,B. Jouault###
(306225, 306226)
The maximum is observed at intermediate magnetic fields (B2-6 T), in betweenthe weak localization and the Shubnikov-de Haas regimes.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 6, 'H', 3],[56.0, 1.7, 'K', 2]

I
###Magnetoresistance of disordered graphene: from low to high temperatures|B. Jabakhanji,D. Kazazis,W. Desrat,A. Michon,M. Portail,B. Jouault###
(306391, 306391)
 Second, the high fieldnegative MR originates from the electron-electron interaction (EEI).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[254.0, 6, 'H', 7],[222.0, 1.7, 'K', 6]

I
###Magnetoresistance of disordered graphene: from low to high temperatures|B. Jabakhanji,D. Kazazis,W. Desrat,A. Michon,M. Portail,B. Jouault###
(306430, 306430)
 Theamplitude of the EEI correction points towards the coexistence of both long andshort range disorder in these samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[293.0, 6, 'H', 9],[261.0, 1.7, 'K', 8]

GaAs/AlGaAs
###Temperature-dependent disorder and magnetic field driven disorder: experimental observations for doped GaAs/AlGaAs quantum well structures|N. V. Agrinskaya,V. A. Berezovets,V. I. Kozub###
(306496, 306501)
Temperature-dependent disorder and magnetic field driven disorder experimental observations for doped GaAs/AlGaAs quantum well structures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[89.0, 100, 'K', 2],[103.0, 10, 'K', 3]

GaAs/AlGaAs
###Temperature-dependent disorder and magnetic field driven disorder: experimental observations for doped GaAs/AlGaAs quantum well structures|N. V. Agrinskaya,V. A. Berezovets,V. I. Kozub###
(306529, 306534)
 We report experimental studies of conductance and magnetoconductance ofGaAs/AlGaAs quantum well structures where both wells and barriers are doped byacceptor impurity Be.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[56.0, 100, 'K', 1],[70.0, 10, 'K', 2]

Be
###Temperature-dependent disorder and magnetic field driven disorder: experimental observations for doped GaAs/AlGaAs quantum well structures|N. V. Agrinskaya,V. A. Berezovets,V. I. Kozub###
(306563, 306563)
 We report experimental studies of conductance and magnetoconductance ofGaAs/AlGaAs quantum well structures where both wells and barriers are doped byacceptor impurity Be.
Featurization terminated normally.
0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 100, 'K', 1],[41.0, 10, 'K', 2]

At
###Temperature-dependent disorder and magnetic field driven disorder: experimental observations for doped GaAs/AlGaAs quantum well structures|N. V. Agrinskaya,V. A. Berezovets,V. I. Kozub###
(306593, 306593)
 At small temperatures(less than 10 K) we observed strong negative magnetoresistance at moderatemagnetic field which crossed over to positive magnetoresistance at very strongmagnetic fields and was completely suppressed with an increase of temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 100, 'K', 1],[11.0, 10, 'K', 0]

P
###Nonequilibrium spin injection in monolayer black phosphorus|Mingyan Chen,Zhizhou Yu,Yin Wang,Yiqun Xie,Jian Wang,Hong Guo###
(306888, 306888)
 Monolayer black phosphorus (M<missing VAR>BP) is an interesting emerging electronicmaterial with a direct band gap and relatively high carrier mobility.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Nonequilibrium spin injection in monolayer black phosphorus|Mingyan Chen,Zhizhou Yu,Yin Wang,Yiqun Xie,Jian Wang,Hong Guo###
(306925, 306925)
 In thiswork we report a theoretical investigation of nonequilibrium spin injection andspin-polarized quantum transport in M<missing VAR>BP from ferromagnetic Ni contacts, intwo-dimensional magnetic tunneling structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BP
###Nonequilibrium spin injection in monolayer black phosphorus|Mingyan Chen,Zhizhou Yu,Yin Wang,Yiqun Xie,Jian Wang,Hong Guo###
(306964, 306965)
 In thiswork we report a theoretical investigation of nonequilibrium spin injection andspin-polarized quantum transport in M<missing VAR>BP from ferromagnetic Ni contacts, intwo-dimensional magnetic tunneling structures.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Nonequilibrium spin injection in monolayer black phosphorus|Mingyan Chen,Zhizhou Yu,Yin Wang,Yiqun Xie,Jian Wang,Hong Guo###
(306971, 306971)
 In thiswork we report a theoretical investigation of nonequilibrium spin injection andspin-polarized quantum transport in M<missing VAR>BP from ferromagnetic Ni contacts, intwo-dimensional magnetic tunneling structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BP
###Nonequilibrium spin injection in monolayer black phosphorus|Mingyan Chen,Zhizhou Yu,Yin Wang,Yiqun Xie,Jian Wang,Hong Guo###
(307071, 307072)
 We investigate physicalproperties such as the spin injection efficiency, the tunnel magnetoresistanceratio, spin-polarized currents, charge currents and transmission coefficientsas a function of external bias voltage, for two different device contactstructures where M<missing VAR>BP is contacted by Ni(111) and by Ni(100).
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TaAs
###Signatures of the Adler-Bell-Jackiw chiral anomaly in a Weyl Fermion semimetal|Chenglong Zhang,Su-Yang Xu,Ilya Belopolski,Zhujun Yuan,Ziquan Lin,Bingbing Tong,Nasser Alidoust,Chi-Cheng Lee,Shin-Ming Huang,Tay-Rong Chang,Horng-Tay Jeng,Hsin Lin,Madhab Neupane,Daniel S. Sanchez,Hao Zheng,Guang Bian,Junfeng Wang,Chi Zhang,Hai-Zhou Lu,Shun-Qing Shen,Titus Neupert,M. Zahid Hasan,Shuang Jia###
(307354, 307355)
 Here, we report signatures of thechiral anomaly in the magneto-transport measurements on the first Weylsemimetal TaAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TaAs
###Signatures of the Adler-Bell-Jackiw chiral anomaly in a Weyl Fermion semimetal|Chenglong Zhang,Su-Yang Xu,Ilya Belopolski,Zhujun Yuan,Ziquan Lin,Bingbing Tong,Nasser Alidoust,Chi-Cheng Lee,Shin-Ming Huang,Tay-Rong Chang,Horng-Tay Jeng,Hsin Lin,Madhab Neupane,Daniel S. Sanchez,Hao Zheng,Guang Bian,Junfeng Wang,Chi Zhang,Hai-Zhou Lu,Shun-Qing Shen,Titus Neupert,M. Zahid Hasan,Shuang Jia###
(307421, 307422)
 We show negative magnetoresistance under parallel electric andmagnetic fields, that is, unlike most metals whose resistivity increases underan external magnetic field, we observe that our high mobility TaAs samplesbecome more conductive as a magnetic field is applied along the direction ofthe current for certain ranges of the field strength.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TaAs
###Signatures of the Adler-Bell-Jackiw chiral anomaly in a Weyl Fermion semimetal|Chenglong Zhang,Su-Yang Xu,Ilya Belopolski,Zhujun Yuan,Ziquan Lin,Bingbing Tong,Nasser Alidoust,Chi-Cheng Lee,Shin-Ming Huang,Tay-Rong Chang,Horng-Tay Jeng,Hsin Lin,Madhab Neupane,Daniel S. Sanchez,Hao Zheng,Guang Bian,Junfeng Wang,Chi Zhang,Hai-Zhou Lu,Shun-Qing Shen,Titus Neupert,M. Zahid Hasan,Shuang Jia###
(307579, 307580)
 Our transport data,corroborated by photoemission measurements, first-principles calculations andtheoretical analyses, collectively demonstrate signatures of the Weyl fermionchiral anomaly in the magneto-transport of TaAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TaAs2
###Giant semiclassical magnetoresistance in high mobility TaAs2 semimetal|Desheng Wu,Jian Liao,Wei Yi,Xia Wang,Peigang Li,Hongming Weng,Youguo Shi,Yongqing Li,Jianlin Luo,Xi Dai,Zhong Fang###
(307603, 307605)
Giant semiclassical magnetoresistance in high mobility TaAs2 semimetal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[201.0, 1, ',', 4],[203.0, 200, ',', 4],[205.0, 0, '%', 4],[212.0, 9, 'T', 4],[218.0, 2, 'K', 4]

TaAs2
###Giant semiclassical magnetoresistance in high mobility TaAs2 semimetal|Desheng Wu,Jian Liao,Wei Yi,Xia Wang,Peigang Li,Hongming Weng,Youguo Shi,Yongqing Li,Jianlin Luo,Xi Dai,Zhong Fang###
(307643, 307645)
 We report the observation of colossal positive magnetoresistance (MR) insingle crystalline, high mobility TaAs2 semimetal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 1, ',', 3],[163.0, 200, ',', 3],[165.0, 0, '%', 3],[172.0, 9, 'T', 3],[178.0, 2, 'K', 3]

B
###Giant semiclassical magnetoresistance in high mobility TaAs2 semimetal|Desheng Wu,Jian Liao,Wei Yi,Xia Wang,Peigang Li,Hongming Weng,Youguo Shi,Yongqing Li,Jianlin Luo,Xi Dai,Zhong Fang###
(307680, 307680)
 The excellent fit of MR by asingle quadratic function of the magnetic field B over a wide temperature range(T<missing VAR>  2-300 K) suggests the semiclassical nature of the MR.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 1, ',', 2],[128.0, 200, ',', 2],[130.0, 0, '%', 2],[137.0, 9, 'T', 2],[143.0, 2, 'K', 2]

K
###Giant semiclassical magnetoresistance in high mobility TaAs2 semimetal|Desheng Wu,Jian Liao,Wei Yi,Xia Wang,Peigang Li,Hongming Weng,Youguo Shi,Yongqing Li,Jianlin Luo,Xi Dai,Zhong Fang###
(307701, 307701)
 The excellent fit of MR by asingle quadratic function of the magnetic field B over a wide temperature range(T<missing VAR>  2-300 K) suggests the semiclassical nature of the MR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 1, ',', 2],[107.0, 200, ',', 2],[109.0, 0, '%', 2],[116.0, 9, 'T', 2],[122.0, 2, 'K', 2]

TaAs2
###Giant semiclassical magnetoresistance in high mobility TaAs2 semimetal|Desheng Wu,Jian Liao,Wei Yi,Xia Wang,Peigang Li,Hongming Weng,Youguo Shi,Yongqing Li,Jianlin Luo,Xi Dai,Zhong Fang###
(307787, 307789)
 The measurements ofHall effect and Shubnikov-de Haas oscillations, as well as band structurecalculations suggest that the giant MR originates from the nearly perfectlycompensated electrons and holes in TaAs2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 1, ',', 1],[19.0, 200, ',', 1],[21.0, 0, '%', 1],[28.0, 9, 'T', 1],[34.0, 2, 'K', 1]

B
###Giant semiclassical magnetoresistance in high mobility TaAs2 semimetal|Desheng Wu,Jian Liao,Wei Yi,Xia Wang,Peigang Li,Hongming Weng,Youguo Shi,Yongqing Li,Jianlin Luo,Xi Dai,Zhong Fang###
(307815, 307815)
 The quadratic MR can even exceed1,200,000% at B  9 T and T<missing VAR>  2 K, which is one of the largest values amongthose of all known semi-metallic compounds including the very recentlydiscovered WTe2 and NbSb2.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 1, ',', 0],[7.0, 200, ',', 0],[5.0, 0, '%', 0],[2.0, 9, 'T', 0],[8.0, 2, 'K', 0]

WTe2
###Giant semiclassical magnetoresistance in high mobility TaAs2 semimetal|Desheng Wu,Jian Liao,Wei Yi,Xia Wang,Peigang Li,Hongming Weng,Youguo Shi,Yongqing Li,Jianlin Luo,Xi Dai,Zhong Fang###
(307868, 307870)
 The quadratic MR can even exceed1,200,000% at B  9 T and T<missing VAR>  2 K, which is one of the largest values amongthose of all known semi-metallic compounds including the very recentlydiscovered WTe2 and NbSb2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 1, ',', 0],[60.0, 200, ',', 0],[58.0, 0, '%', 0],[51.0, 9, 'T', 0],[45.0, 2, 'K', 0]

NbSb2
###Giant semiclassical magnetoresistance in high mobility TaAs2 semimetal|Desheng Wu,Jian Liao,Wei Yi,Xia Wang,Peigang Li,Hongming Weng,Youguo Shi,Yongqing Li,Jianlin Luo,Xi Dai,Zhong Fang###
(307874, 307876)
 The quadratic MR can even exceed1,200,000% at B  9 T and T<missing VAR>  2 K, which is one of the largest values amongthose of all known semi-metallic compounds including the very recentlydiscovered WTe2 and NbSb2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 1, ',', 0],[66.0, 200, ',', 0],[64.0, 0, '%', 0],[57.0, 9, 'T', 0],[51.0, 2, 'K', 0]

TaAs2
###Giant semiclassical magnetoresistance in high mobility TaAs2 semimetal|Desheng Wu,Jian Liao,Wei Yi,Xia Wang,Peigang Li,Hongming Weng,Youguo Shi,Yongqing Li,Jianlin Luo,Xi Dai,Zhong Fang###
(307889, 307891)
 The giant positive magnetoresistance in TaAs2, whichnot only has a fundamentally different origin from the negative colossal MRobserved in magnetic systems, but also provides a nice complemental system thatwill be beneficial for applications in magnetoelectronic devices<missing PERIOD>
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 1, ',', 1],[81.0, 200, ',', 1],[79.0, 0, '%', 1],[72.0, 9, 'T', 1],[66.0, 2, 'K', 1]

NbAs2
###Fermi surface topology and negative longitudinal magnetoresistance observed in centrosymmetric NbAs2 semimetal|Bing Shen,Xiaoyu Deng,Gabriel Kotliar,Ni Ni###
(307993, 307995)
Fermi surface topology and negative longitudinal magnetoresistance observed in centrosymmetric NbAs2 semimetal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 8000, 'at', 2],[63.0, 9, 'T', 2],[66.0, 1.8, 'K', 2],[74.0, 1, 'to', 2],[75.0, 2, 'm', 2]

NbAs2
###Fermi surface topology and negative longitudinal magnetoresistance observed in centrosymmetric NbAs2 semimetal|Bing Shen,Xiaoyu Deng,Gabriel Kotliar,Ni Ni###
(308018, 308020)
 We report transverse and longitudinal magneto-transport properties of NbAs2single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 8000, 'at', 1],[38.0, 9, 'T', 1],[41.0, 1.8, 'K', 1],[49.0, 1, 'to', 1],[50.0, 2, 'm', 1]

V
###Fermi surface topology and negative longitudinal magnetoresistance observed in centrosymmetric NbAs2 semimetal|Bing Shen,Xiaoyu Deng,Gabriel Kotliar,Ni Ni###
(308072, 308072)
 Attributing to the electron-hole compensation, non-saturatinglarge transverse magnetoresistance reaches up to 8000 at 9 T at 1.8 K withmobility around 1 to 2 m2V-1S-1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 8000, 'at', 0],[14.0, 9, 'T', 0],[11.0, 1.8, 'K', 0],[3.0, 1, 'to', 0],[2.0, 2, 'm', 0]

S
###Fermi surface topology and negative longitudinal magnetoresistance observed in centrosymmetric NbAs2 semimetal|Bing Shen,Xiaoyu Deng,Gabriel Kotliar,Ni Ni###
(308075, 308075)
 Attributing to the electron-hole compensation, non-saturatinglarge transverse magnetoresistance reaches up to 8000 at 9 T at 1.8 K withmobility around 1 to 2 m2V-1S-1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 8000, 'at', 0],[17.0, 9, 'T', 0],[14.0, 1.8, 'K', 0],[6.0, 1, 'to', 0],[5.0, 2, 'm', 0]

H
###Fermi surface topology and negative longitudinal magnetoresistance observed in centrosymmetric NbAs2 semimetal|Bing Shen,Xiaoyu Deng,Gabriel Kotliar,Ni Ni###
(308105, 308105)
 We present a thorough study ofangular-dependent Shubnikov-de Haas (SdH) quantum oscillations of NbAs2.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 8000, 'at', 1],[47.0, 9, 'T', 1],[44.0, 1.8, 'K', 1],[36.0, 1, 'to', 1],[35.0, 2, 'm', 1]

NbAs2
###Fermi surface topology and negative longitudinal magnetoresistance observed in centrosymmetric NbAs2 semimetal|Bing Shen,Xiaoyu Deng,Gabriel Kotliar,Ni Ni###
(308114, 308116)
 We present a thorough study ofangular-dependent Shubnikov-de Haas (SdH) quantum oscillations of NbAs2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 8000, 'at', 1],[56.0, 9, 'T', 1],[53.0, 1.8, 'K', 1],[45.0, 1, 'to', 1],[44.0, 2, 'm', 1]

H
###Fermi surface topology and negative longitudinal magnetoresistance observed in centrosymmetric NbAs2 semimetal|Bing Shen,Xiaoyu Deng,Gabriel Kotliar,Ni Ni###
(308213, 308213)
 Although the angulardependence of alpha, beta and delta agree well with the SdH data, it is unclearwhy the gamma pocket is missing in SdH.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 8000, 'at', 4],[155.0, 9, 'T', 4],[152.0, 1.8, 'K', 4],[144.0, 1, 'to', 4],[143.0, 2, 'm', 4]

H
###Fermi surface topology and negative longitudinal magnetoresistance observed in centrosymmetric NbAs2 semimetal|Bing Shen,Xiaoyu Deng,Gabriel Kotliar,Ni Ni###
(308240, 308240)
 Although the angulardependence of alpha, beta and delta agree well with the SdH data, it is unclearwhy the gamma pocket is missing in SdH.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[183.0, 8000, 'at', 4],[182.0, 9, 'T', 4],[179.0, 1.8, 'K', 4],[171.0, 1, 'to', 4],[170.0, 2, 'm', 4]

In
###Subatomic mechanism of the oscillatory magnetoresistance in superconductors|Boris I. Ivlev###
(308322, 308322)
 In the recent experiments the unusual oscillatory magnetoresistance insuperconductors was discovered with a periodicity essentially independent onmagnetic field direction and even material parameters.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[306.0, 0.18, 'T', 7],[311.0, 0, ',', 7],[313.0, 1, ',', 7]

H
###Subatomic mechanism of the oscillatory magnetoresistance in superconductors|Boris I. Ivlev###
(308621, 308621)
 Calculated universalpositions of peaks (n<missing VAR>1/2)Delta H (Delta Hsimeq 0.18T and n<missing VAR>0,1,2.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 0.18, 'T', 0],[12.0, 0, ',', 0],[14.0, 1, ',', 0]

H
###Subatomic mechanism of the oscillatory magnetoresistance in superconductors|Boris I. Ivlev###
(308626, 308626)
 Calculated universalpositions of peaks (n<missing VAR>1/2)Delta H (Delta Hsimeq 0.18T and n<missing VAR>0,1,2.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 0.18, 'T', 0],[7.0, 0, ',', 0],[9.0, 1, ',', 0]

(H)
###Subatomic mechanism of the oscillatory magnetoresistance in superconductors|Boris I. Ivlev###
(308649, 308651)
on the R<missing VAR>(H) curve are in a good agreement with experiments.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 0.18, 'T', 1],[16.0, 0, ',', 1],[14.0, 1, ',', 1]

F
###Fourier analyses of commensurability oscillations in Fibonacci lateral superlattices|Akira Endo,Yasuhiro Iye###
(308717, 308717)
 Magnetotransport measurements have been performed on Fibonacci lateralsuperlattices (FL<missing VAR>SLs) -- two-dimensional electron gases subjected to a weakpotential modulation arranged in the Fibonacci sequence, LSLLSL<missing VAR>S.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Fourier analyses of commensurability oscillations in Fibonacci lateral superlattices|Akira Endo,Yasuhiro Iye###
(308719, 308719)
 Magnetotransport measurements have been performed on Fibonacci lateralsuperlattices (FL<missing VAR>SLs) -- two-dimensional electron gases subjected to a weakpotential modulation arranged in the Fibonacci sequence, LSLLSL<missing VAR>S.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Fourier analyses of commensurability oscillations in Fibonacci lateral superlattices|Akira Endo,Yasuhiro Iye###
(308762, 308762)
 Magnetotransport measurements have been performed on Fibonacci lateralsuperlattices (FL<missing VAR>SLs) -- two-dimensional electron gases subjected to a weakpotential modulation arranged in the Fibonacci sequence, LSLLSL<missing VAR>S.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Fourier analyses of commensurability oscillations in Fibonacci lateral superlattices|Akira Endo,Yasuhiro Iye###
(308764, 308764)
 Magnetotransport measurements have been performed on Fibonacci lateralsuperlattices (FL<missing VAR>SLs) -- two-dimensional electron gases subjected to a weakpotential modulation arranged in the Fibonacci sequence, LSLLSL<missing VAR>S.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Fourier analyses of commensurability oscillations in Fibonacci lateral superlattices|Akira Endo,Yasuhiro Iye###
(308775, 308775)
, withL<missing VAR>/Stau (the golden ratio).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(CO)
###Fourier analyses of commensurability oscillations in Fibonacci lateral superlattices|Akira Endo,Yasuhiro Iye###
(308793, 308796)
 Complicated commensurability oscillation (CO) isobserved, which can be accounted for as a superposition of a series of COs eacharising from a sinusoidal modulation representing the characteristic lengthscale of one of the self-similar generations in the Fibonacci sequence.
Featurization successful!
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

COs
###Fourier analyses of commensurability oscillations in Fibonacci lateral superlattices|Akira Endo,Yasuhiro Iye###
(308828, 308829)
 Complicated commensurability oscillation (CO) isobserved, which can be accounted for as a superposition of a series of COs eacharising from a sinusoidal modulation representing the characteristic lengthscale of one of the self-similar generations in the Fibonacci sequence.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CO
###Fourier analyses of commensurability oscillations in Fibonacci lateral superlattices|Akira Endo,Yasuhiro Iye###
(308881, 308882)
Individual CO components can be separated out from the magnetoresistance traceby performing a numerical Fourier band-pass filter.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CO
###Fourier analyses of commensurability oscillations in Fibonacci lateral superlattices|Akira Endo,Yasuhiro Iye###
(308941, 308942)
 From the analysis of theamplitude of a single-component CO thus extracted, the magnitude of thecorresponding Fourier component in the potential modulation can be evaluated.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ge
###Growth of (Ge,Mn) nanocolumns on GaAs(100): the role of morphology and co-doping on magnetotransport|Matthieu Jamet,Ing-Song Yu,Thibaut Devillers,André Barski,Pascale Bayle-Guillemaud,Cyrille Beigne,Johan Rothman,Vincent Baltz,Joel Cibert###
(309072, 309072)
Growth of (Ge,Mn) nanocolumns on GaAs(100) the role of morphology and co-doping on magnetotransport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Growth of (Ge,Mn) nanocolumns on GaAs(100): the role of morphology and co-doping on magnetotransport|Matthieu Jamet,Ing-Song Yu,Thibaut Devillers,André Barski,Pascale Bayle-Guillemaud,Cyrille Beigne,Johan Rothman,Vincent Baltz,Joel Cibert###
(309074, 309074)
Growth of (Ge,Mn) nanocolumns on GaAs(100) the role of morphology and co-doping on magnetotransport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ge
###Growth of (Ge,Mn) nanocolumns on GaAs(100): the role of morphology and co-doping on magnetotransport|Matthieu Jamet,Ing-Song Yu,Thibaut Devillers,André Barski,Pascale Bayle-Guillemaud,Cyrille Beigne,Johan Rothman,Vincent Baltz,Joel Cibert###
(309136, 309136)
 Changing the morphology of the growing surface and the nature of residualimpurities in (Ge,Mn) layers - by using different substrates - dramaticallychanges the morphology of the ferromagnetic Mn-rich inclusions and themagnetotransport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Growth of (Ge,Mn) nanocolumns on GaAs(100): the role of morphology and co-doping on magnetotransport|Matthieu Jamet,Ing-Song Yu,Thibaut Devillers,André Barski,Pascale Bayle-Guillemaud,Cyrille Beigne,Johan Rothman,Vincent Baltz,Joel Cibert###
(309138, 309138)
 Changing the morphology of the growing surface and the nature of residualimpurities in (Ge,Mn) layers - by using different substrates - dramaticallychanges the morphology of the ferromagnetic Mn-rich inclusions and themagnetotransport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Growth of (Ge,Mn) nanocolumns on GaAs(100): the role of morphology and co-doping on magnetotransport|Matthieu Jamet,Ing-Song Yu,Thibaut Devillers,André Barski,Pascale Bayle-Guillemaud,Cyrille Beigne,Johan Rothman,Vincent Baltz,Joel Cibert###
(309170, 309170)
 Changing the morphology of the growing surface and the nature of residualimpurities in (Ge,Mn) layers - by using different substrates - dramaticallychanges the morphology of the ferromagnetic Mn-rich inclusions and themagnetotransport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Growth of (Ge,Mn) nanocolumns on GaAs(100): the role of morphology and co-doping on magnetotransport|Matthieu Jamet,Ing-Song Yu,Thibaut Devillers,André Barski,Pascale Bayle-Guillemaud,Cyrille Beigne,Johan Rothman,Vincent Baltz,Joel Cibert###
(309274, 309274)
 Holes exhibitan anomalous Hall effect, and electrons exhibit a tunneling magnetoresistance,both with a clear dependence on the magnetization of the Mn-rich inclusions;holes exhibit orbital MR, and electrons show only the normal Hall effect, andan additional component of magnetoresistance due to weak localization, allthree being independent of the magnetic state of the Mn rich inclusions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Growth of (Ge,Mn) nanocolumns on GaAs(100): the role of morphology and co-doping on magnetotransport|Matthieu Jamet,Ing-Song Yu,Thibaut Devillers,André Barski,Pascale Bayle-Guillemaud,Cyrille Beigne,Johan Rothman,Vincent Baltz,Joel Cibert###
(309352, 309352)
 Holes exhibitan anomalous Hall effect, and electrons exhibit a tunneling magnetoresistance,both with a clear dependence on the magnetization of the Mn-rich inclusions;holes exhibit orbital MR, and electrons show only the normal Hall effect, andan additional component of magnetoresistance due to weak localization, allthree being independent of the magnetic state of the Mn rich inclusions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Growth of (Ge,Mn) nanocolumns on GaAs(100): the role of morphology and co-doping on magnetotransport|Matthieu Jamet,Ing-Song Yu,Thibaut Devillers,André Barski,Pascale Bayle-Guillemaud,Cyrille Beigne,Johan Rothman,Vincent Baltz,Joel Cibert###
(309384, 309384)
Identified mechanisms point to the position of the Fermi level of the Mn-richmaterial with respect to the valence band of germanium as a crucial parameterin such hybrid layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr
###Tailoring tunnel magnetoresistance by ultrathin Cr and Co interlayers: A first-principles investigation of Fe/MgO/Fe junctions|P. Bose,P. Zahn,J. Henk,I. Mertig###
(309443, 309443)
Tailoring tunnel magnetoresistance by ultrathin Cr and Co interlayers A first-principles investigation of Fe/MgO/Fe junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Tailoring tunnel magnetoresistance by ultrathin Cr and Co interlayers: A first-principles investigation of Fe/MgO/Fe junctions|P. Bose,P. Zahn,J. Henk,I. Mertig###
(309447, 309447)
Tailoring tunnel magnetoresistance by ultrathin Cr and Co interlayers A first-principles investigation of Fe/MgO/Fe junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/MgO/Fe
###Tailoring tunnel magnetoresistance by ultrathin Cr and Co interlayers: A first-principles investigation of Fe/MgO/Fe junctions|P. Bose,P. Zahn,J. Henk,I. Mertig###
(309461, 309466)
Tailoring tunnel magnetoresistance by ultrathin Cr and Co interlayers A first-principles investigation of Fe/MgO/Fe junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Co
###Tailoring tunnel magnetoresistance by ultrathin Cr and Co interlayers: A first-principles investigation of Fe/MgO/Fe junctions|P. Bose,P. Zahn,J. Henk,I. Mertig###
(309487, 309487)
 We report on systematic ab-initio investigations of Co and Cr interlayersembedded in Fe(001)/MgO/Fe(001) magnetic tunnel junctions, focusing on thechanges of the electronic structure and the transport properties withinterlayer thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr
###Tailoring tunnel magnetoresistance by ultrathin Cr and Co interlayers: A first-principles investigation of Fe/MgO/Fe junctions|P. Bose,P. Zahn,J. Henk,I. Mertig###
(309491, 309491)
 We report on systematic ab-initio investigations of Co and Cr interlayersembedded in Fe(001)/MgO/Fe(001) magnetic tunnel junctions, focusing on thechanges of the electronic structure and the transport properties withinterlayer thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr
###Tailoring tunnel magnetoresistance by ultrathin Cr and Co interlayers: A first-principles investigation of Fe/MgO/Fe junctions|P. Bose,P. Zahn,J. Henk,I. Mertig###
(309634, 309634)
 The resistance area products and the tunnelmagnetoresistance ratios show a monotonous trend with distinct oscillations asa function of the Cr thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr
###Tailoring tunnel magnetoresistance by ultrathin Cr and Co interlayers: A first-principles investigation of Fe/MgO/Fe junctions|P. Bose,P. Zahn,J. Henk,I. Mertig###
(309668, 309668)
 These modulations are directly addressed andinterpreted by means of magnetic structures in the Cr films and by complex bandstructure effects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Tailoring tunnel magnetoresistance by ultrathin Cr and Co interlayers: A first-principles investigation of Fe/MgO/Fe junctions|P. Bose,P. Zahn,J. Henk,I. Mertig###
(309694, 309694)
 The characteristics for embedded Co interlayers areconsiderably influenced by interface resonances which are analyzed by the localelectronic structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co/Al2O3/Si/Al2O3
###Conductance in Co/Al2O3/Si/Al2O3 permalloy with asymmetrically doped barrier|R. Guerrero,F. G. Aliev,R. Villar,T. Santos,J. Moodera,V. K. Dugaev,J. Barnas###
(309741, 309753)
Conductance in Co/Al2O3/Si/Al2O3 permalloy with asymmetrically doped barrier.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[132.0, 80, 'K', 4],[137.0, 1, 'monolayer', 4],[208.0, 3, 'D', 6]

In
###Conductance in Co/Al2O3/Si/Al2O3 permalloy with asymmetrically doped barrier|R. Guerrero,F. G. Aliev,R. Villar,T. Santos,J. Moodera,V. K. Dugaev,J. Barnas###
(310027, 310027)
 Inthe high thickness case, up to 1.8AA, we have introduced a phenomenologicalparameter, which reflects the number of single levels on the total density ofsilicon atoms.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 80, 'K', 4],[137.0, 1, 'monolayer', 4],[66.0, 3, 'D', 2]

Bi2Se3
###High pressure transport properties of the topological insulator Bi2Se3|J. J. Hamlin,J. R. Jeffries,N. P. Butch,P. Syers,D. A. Zocco,S. T. Weir,Y. K. Vohra,J. Paglione,M. B. Maple###
(310116, 310119)
High pressure transport properties of the topological insulator Bi2Se3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[240.0, 8, 'GPa', 5]

Bi2Se3
###High pressure transport properties of the topological insulator Bi2Se3|J. J. Hamlin,J. R. Jeffries,N. P. Butch,P. Syers,D. A. Zocco,S. T. Weir,Y. K. Vohra,J. Paglione,M. B. Maple###
(310147, 310150)
 We report x<missing VAR>-ray diffraction, electrical resistivity, and magnetoresistancemeasurements on Bi2Se3 under high pressure and low temperature conditions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[209.0, 8, 'GPa', 4]

Bi2Se3
###High pressure transport properties of the topological insulator Bi2Se3|J. J. Hamlin,J. R. Jeffries,N. P. Butch,P. Syers,D. A. Zocco,S. T. Weir,Y. K. Vohra,J. Paglione,M. B. Maple###
(310224, 310227)
 Initially, pressure drives Bi2Se3 towards increasingly insulatingbehavior and then, at higher pressures, the sample appears to enter a fullymetallic state coincident with a change in the crystal structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 8, 'GPa', 2]

Bi2Se3
###High pressure transport properties of the topological insulator Bi2Se3|J. J. Hamlin,J. R. Jeffries,N. P. Butch,P. Syers,D. A. Zocco,S. T. Weir,Y. K. Vohra,J. Paglione,M. B. Maple###
(310298, 310301)
 Within thelow pressure phase, Bi2Se3 exhibits an unusual field dependence of thetransverse magnetoresistance that is positive at low fields and becomesnegative at higher fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 8, 'GPa', 1]

Bi2Se3
###High pressure transport properties of the topological insulator Bi2Se3|J. J. Hamlin,J. R. Jeffries,N. P. Butch,P. Syers,D. A. Zocco,S. T. Weir,Y. K. Vohra,J. Paglione,M. B. Maple###
(310387, 310390)
 Our results demonstrate that pressures below 8 GPaprovide a non-chemical means to controllably reduce the bulk conductivity ofBi2Se3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 8, 'GPa', 0]

In
###Multidimensional Nature of Molecular Organic Conductors Revealed by Angular Magnetoresistance Oscillations|Pashupati Dhakal,Harukazu Yoshino,Jeong-Il Oh,Koichi Kikuchi,Michael J. Naughton###
(310483, 310483)
 Inparticular, characteristics associated with 1, 2, and 3 dimensional electronicmotion are separately revealed when a sample is rotated through differentcrystal planes in a magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 1, ',', 0],[15.0, 2, ',', 0],[19.0, 3, 'dimensional', 0],[242.0, 1, 'd', 3],[244.0, 2, 'd', 3],[247.0, 3, 'd', 3]

SF
###Multidimensional Nature of Molecular Organic Conductors Revealed by Angular Magnetoresistance Oscillations|Pashupati Dhakal,Harukazu Yoshino,Jeong-Il Oh,Koichi Kikuchi,Michael J. Naughton###
(310554, 310555)
 Originally discovered in the TMTSF basedconductors, these effects are particularly pronounced in the related system(DMET)2I3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 1, ',', 1],[56.0, 2, ',', 1],[52.0, 3, 'dimensional', 1],[170.0, 1, 'd', 2],[172.0, 2, 'd', 2],[175.0, 3, 'd', 2]

I3
###Multidimensional Nature of Molecular Organic Conductors Revealed by Angular Magnetoresistance Oscillations|Pashupati Dhakal,Harukazu Yoshino,Jeong-Il Oh,Koichi Kikuchi,Michael J. Naughton###
(310589, 310590)
 Originally discovered in the TMTSF basedconductors, these effects are particularly pronounced in the related system(DMET)2I3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 1, ',', 1],[91.0, 2, ',', 1],[87.0, 3, 'dimensional', 1],[135.0, 1, 'd', 2],[137.0, 2, 'd', 2],[140.0, 3, 'd', 2]

I3
###Multidimensional Nature of Molecular Organic Conductors Revealed by Angular Magnetoresistance Oscillations|Pashupati Dhakal,Harukazu Yoshino,Jeong-Il Oh,Koichi Kikuchi,Michael J. Naughton###
(310743, 310744)
The calculations employ the Boltzmann transportequation that incorporates the systems triclinic crystal structure, whichallows for accurate estimates of the transfer integrals along thecrystallographic axes, verifying the 1d, 2d and 3d nature of (DMET)2I3, as wellas crossovers between dimensions in the electronic behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[248.0, 1, ',', 3],[245.0, 2, ',', 3],[241.0, 3, 'dimensional', 3],[18.0, 1, 'd', 0],[16.0, 2, 'd', 0],[13.0, 3, 'd', 0]

In
###Magnetotransport through graphene nanoribbons at high magnetic fields|S. Minke,S. H. Jhang,J. Wurm,Y. Skourski,J. Wosnitza,C. Strunk,D. Weiss,K. Richter,J. Eroms###
(310868, 310868)
 In experiment, at high carrier densitieswe observe Shubnikov-de Haas oscillations and the quantum Hall effect, while atlow densities the oscillations disappear and an initially negativemagnetoresistance becomes strongly positive at high magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 60, 'T', 1]

Al
###Anisotropic magneto-Coulomb effect versus spin accumulation in a ferromagnetic single-electron device|A. Bernand-Mantel,P. Seneor,K. Bouzehouane,S. Fusil,C. Deranlot,F. Petroff,A. Fert###
(311136, 311136)
 The devices consist of single non-magneticnano-objects (nanometer size nanoparticles of Al or Cu) connected to Coferromagnetic leads.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Anisotropic magneto-Coulomb effect versus spin accumulation in a ferromagnetic single-electron device|A. Bernand-Mantel,P. Seneor,K. Bouzehouane,S. Fusil,C. Deranlot,F. Petroff,A. Fert###
(311140, 311140)
 The devices consist of single non-magneticnano-objects (nanometer size nanoparticles of Al or Cu) connected to Coferromagnetic leads.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Anisotropic magneto-Coulomb effect versus spin accumulation in a ferromagnetic single-electron device|A. Bernand-Mantel,P. Seneor,K. Bouzehouane,S. Fusil,C. Deranlot,F. Petroff,A. Fert###
(311147, 311147)
 The devices consist of single non-magneticnano-objects (nanometer size nanoparticles of Al or Cu) connected to Coferromagnetic leads.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Anisotropic magneto-Coulomb effect versus spin accumulation in a ferromagnetic single-electron device|A. Bernand-Mantel,P. Seneor,K. Bouzehouane,S. Fusil,C. Deranlot,F. Petroff,A. Fert###
(311198, 311198)
 The comparison with simulations allows us attribute theobserved magnetoresistance to either spin accumulation or anisotropicmagneto-Coulomb effect (AM<missing VAR>C), two effects with very different origins.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Anisotropic magneto-Coulomb effect versus spin accumulation in a ferromagnetic single-electron device|A. Bernand-Mantel,P. Seneor,K. Bouzehouane,S. Fusil,C. Deranlot,F. Petroff,A. Fert###
(311287, 311287)
 Asa tool for further studies, we propose a simple way to determine if spintransport or AM<missing VAR>C effect dominates from the Coulomb blockade I-V curves of thespintronics device.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Anisotropic magneto-Coulomb effect versus spin accumulation in a ferromagnetic single-electron device|A. Bernand-Mantel,P. Seneor,K. Bouzehouane,S. Fusil,C. Deranlot,F. Petroff,A. Fert###
(311326, 311326)
 Asa tool for further studies, we propose a simple way to determine if spintransport or AM<missing VAR>C effect dominates from the Coulomb blockade I-V curves of thespintronics device.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Anisotropic magneto-Coulomb effect versus spin accumulation in a ferromagnetic single-electron device|A. Bernand-Mantel,P. Seneor,K. Bouzehouane,S. Fusil,C. Deranlot,F. Petroff,A. Fert###
(311340, 311340)
 Asa tool for further studies, we propose a simple way to determine if spintransport or AM<missing VAR>C effect dominates from the Coulomb blockade I-V curves of thespintronics device.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Anisotropic magneto-Coulomb effect versus spin accumulation in a ferromagnetic single-electron device|A. Bernand-Mantel,P. Seneor,K. Bouzehouane,S. Fusil,C. Deranlot,F. Petroff,A. Fert###
(311342, 311342)
 Asa tool for further studies, we propose a simple way to determine if spintransport or AM<missing VAR>C effect dominates from the Coulomb blockade I-V curves of thespintronics device.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tb5Si3
###Isothermal magnetic entropy behavior in Tb5Si3: Sign reversal and non-monotonic variation with temperature, and implications|Niharika Mohapatraa,Sitikantha D. Das,K. Mukherjee,E. V. Sampathkumaran###
(311374, 311377)
Isothermal magnetic entropy behavior in Tb5Si3 Sign reversal and non-monotonic variation with temperature, and implications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.375,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.625,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 69, 'K', 1]

S
###Isothermal magnetic entropy behavior in Tb5Si3: Sign reversal and non-monotonic variation with temperature, and implications|Niharika Mohapatraa,Sitikantha D. Das,K. Mukherjee,E. V. Sampathkumaran###
(311411, 311411)
 The magnetic entropy change (DeltaS), a measure of the magnetocaloriceffect, in Tb5Si3, a compound exhibiting unusual positive magnetoresistancefollowing a magnetic-field-induced transition below magnetic transitiontemperature ( 69 K), has been investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 69, 'K', 0]

Tb5Si3
###Isothermal magnetic entropy behavior in Tb5Si3: Sign reversal and non-monotonic variation with temperature, and implications|Niharika Mohapatraa,Sitikantha D. Das,K. Mukherjee,E. V. Sampathkumaran###
(311431, 311434)
 The magnetic entropy change (DeltaS), a measure of the magnetocaloriceffect, in Tb5Si3, a compound exhibiting unusual positive magnetoresistancefollowing a magnetic-field-induced transition below magnetic transitiontemperature ( 69 K), has been investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.375,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.625,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 69, 'K', 0]

S
###Isothermal magnetic entropy behavior in Tb5Si3: Sign reversal and non-monotonic variation with temperature, and implications|Niharika Mohapatraa,Sitikantha D. Das,K. Mukherjee,E. V. Sampathkumaran###
(311490, 311490)
 We found that DeltaS is negativein the paramagnetic state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 69, 'K', 1]

At
###Isothermal magnetic entropy behavior in Tb5Si3: Sign reversal and non-monotonic variation with temperature, and implications|Niharika Mohapatraa,Sitikantha D. Das,K. Mukherjee,E. V. Sampathkumaran###
(311506, 311506)
 At the magnetic transition temperature, DeltaSshows sign reversal from negative (in the paramagnetic state) to positive valuein the magnetically ordered state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 69, 'K', 2]

S
###Isothermal magnetic entropy behavior in Tb5Si3: Sign reversal and non-monotonic variation with temperature, and implications|Niharika Mohapatraa,Sitikantha D. Das,K. Mukherjee,E. V. Sampathkumaran###
(311518, 311518)
 At the magnetic transition temperature, DeltaSshows sign reversal from negative (in the paramagnetic state) to positive valuein the magnetically ordered state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 69, 'K', 2]

S
###Isothermal magnetic entropy behavior in Tb5Si3: Sign reversal and non-monotonic variation with temperature, and implications|Niharika Mohapatraa,Sitikantha D. Das,K. Mukherjee,E. V. Sampathkumaran###
(311609, 311609)
large positive DeltaS, behaving like a paramagnet.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 69, 'K', 4]

In
###Isothermal magnetic entropy behavior in Tb5Si3: Sign reversal and non-monotonic variation with temperature, and implications|Niharika Mohapatraa,Sitikantha D. Das,K. Mukherjee,E. V. Sampathkumaran###
(311695, 311695)
 In addition,we note that Arrott plots present an interesting scenario.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[223.0, 69, 'K', 6]

In
###Theory of the ac spin-valve effect|Denis Kochan,Martin Gmitra,Jaroslav Fabian###
(311869, 311869)
 In wide junctions the acmagnetoresistance oscillates between positive and negative values, reflectingresonant amplification and depletion of the spin accumulation, while the lineshape for thin tunnel junctions is predicted to be purely Lorentzian.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CaCu3Ti4-xRu
###High-field magnetization and magnetoresistance of the $A$-site ordered perovskite oxide CaCu$_{3}$Ti$_{4-x}$Ru$_{x}$O$_{12}$~($0 \le x \le 4$)|T. Kida,R. Kammuri,M. Hagiwara,S. Yoshii,W. Kobayashi,M. Iwakawa,I. Terasaki###
(312041, 312048)
High-field magnetization and magnetoresistance of the A-site ordered perovskite oxide CaCu3Ti4-xRux<missing VAR>O12(0 le x<missing VAR> le 4).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[100.0, 0.5, ',', 2],[102.0, 1.0, 'and', 2],[103.0, 1.5, 'is', 2],[144.0, 4, 'is', 3],[257.0, -70, '%', 5],[264.0, 4.2, 'K', 5],[267.0, 52, 'T', 5]

O12
###High-field magnetization and magnetoresistance of the $A$-site ordered perovskite oxide CaCu$_{3}$Ti$_{4-x}$Ru$_{x}$O$_{12}$~($0 \le x \le 4$)|T. Kida,R. Kammuri,M. Hagiwara,S. Yoshii,W. Kobayashi,M. Iwakawa,I. Terasaki###
(312050, 312051)
High-field magnetization and magnetoresistance of the A-site ordered perovskite oxide CaCu3Ti4-xRux<missing VAR>O12(0 le x<missing VAR> le 4).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 0.5, ',', 2],[99.0, 1.0, 'and', 2],[100.0, 1.5, 'is', 2],[141.0, 4, 'is', 3],[254.0, -70, '%', 5],[261.0, 4.2, 'K', 5],[264.0, 52, 'T', 5]

CaCu3Ti4-x
###High-field magnetization and magnetoresistance of the $A$-site ordered perovskite oxide CaCu$_{3}$Ti$_{4-x}$Ru$_{x}$O$_{12}$~($0 \le x \le 4$)|T. Kida,R. Kammuri,M. Hagiwara,S. Yoshii,W. Kobayashi,M. Iwakawa,I. Terasaki###
(312100, 312106)
 We have measured high-field magnetization and magnetoresistance ofpolycrystalline samples of the A-site ordered perovskite CaCu3Ti4-xRuxO12 (x<missing VAR>0- 4) utilizing a non-destructive pulsed magnet.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[42.0, 0.5, ',', 1],[44.0, 1.0, 'and', 1],[45.0, 1.5, 'is', 1],[86.0, 4, 'is', 2],[199.0, -70, '%', 4],[206.0, 4.2, 'K', 4],[209.0, 52, 'T', 4]

O12
###High-field magnetization and magnetoresistance of the $A$-site ordered perovskite oxide CaCu$_{3}$Ti$_{4-x}$Ru$_{x}$O$_{12}$~($0 \le x \le 4$)|T. Kida,R. Kammuri,M. Hagiwara,S. Yoshii,W. Kobayashi,M. Iwakawa,I. Terasaki###
(312108, 312109)
 We have measured high-field magnetization and magnetoresistance ofpolycrystalline samples of the A-site ordered perovskite CaCu3Ti4-xRuxO12 (x<missing VAR>0- 4) utilizing a non-destructive pulsed magnet.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 0.5, ',', 1],[41.0, 1.0, 'and', 1],[42.0, 1.5, 'is', 1],[83.0, 4, 'is', 2],[196.0, -70, '%', 4],[203.0, 4.2, 'K', 4],[206.0, 52, 'T', 4]

Cu2
###High-field magnetization and magnetoresistance of the $A$-site ordered perovskite oxide CaCu$_{3}$Ti$_{4-x}$Ru$_{x}$O$_{12}$~($0 \le x \le 4$)|T. Kida,R. Kammuri,M. Hagiwara,S. Yoshii,W. Kobayashi,M. Iwakawa,I. Terasaki###
(312265, 312266)
 We have analyzed this field dependencebased on the thermodynamics of magnetic materials, and propose that theexternal fields delocalize the holes on the Cu2 ions in order to maximize theentropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 0.5, ',', 2],[115.0, 1.0, 'and', 2],[114.0, 1.5, 'is', 2],[73.0, 4, 'is', 1],[39.0, -70, '%', 1],[46.0, 4.2, 'K', 1],[49.0, 52, 'T', 1]

FeSb2
###Highly Dispersive Electron Relaxation and Colossal Thermoelectricity in the Correlated Semiconductor FeSb$_2$|Peijie Sun,Wenhu Xu,Jan M. Tomczak,Gabriel Kotliar,Martin Sondergaard,Bo B. Iversen,Frank Steglich###
(312353, 312355)
Highly Dispersive Electron Relaxation and Colossal Thermoelectricity in the Correlated Semiconductor FeSb2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 30, ',', 1]

S
###Highly Dispersive Electron Relaxation and Colossal Thermoelectricity in the Correlated Semiconductor FeSb$_2$|Peijie Sun,Wenhu Xu,Jan M. Tomczak,Gabriel Kotliar,Martin Sondergaard,Bo B. Iversen,Frank Steglich###
(312373, 312373)
 We show that the colossal thermoelectric power, S(T), observed in thecorrelated semiconductor FeSb2 below 30,K is accompanied by a huge Nernstcoefficient nu(T) and magnetoresistance MR(T).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 30, ',', 0]

FeSb2
###Highly Dispersive Electron Relaxation and Colossal Thermoelectricity in the Correlated Semiconductor FeSb$_2$|Peijie Sun,Wenhu Xu,Jan M. Tomczak,Gabriel Kotliar,Martin Sondergaard,Bo B. Iversen,Frank Steglich###
(312390, 312392)
 We show that the colossal thermoelectric power, S(T), observed in thecorrelated semiconductor FeSb2 below 30,K is accompanied by a huge Nernstcoefficient nu(T) and magnetoresistance MR(T).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 30, ',', 0]

K
###Highly Dispersive Electron Relaxation and Colossal Thermoelectricity in the Correlated Semiconductor FeSb$_2$|Peijie Sun,Wenhu Xu,Jan M. Tomczak,Gabriel Kotliar,Martin Sondergaard,Bo B. Iversen,Frank Steglich###
(312398, 312398)
 We show that the colossal thermoelectric power, S(T), observed in thecorrelated semiconductor FeSb2 below 30,K is accompanied by a huge Nernstcoefficient nu(T) and magnetoresistance MR(T).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 30, ',', 0]

S
###Highly Dispersive Electron Relaxation and Colossal Thermoelectricity in the Correlated Semiconductor FeSb$_2$|Peijie Sun,Wenhu Xu,Jan M. Tomczak,Gabriel Kotliar,Martin Sondergaard,Bo B. Iversen,Frank Steglich###
(312472, 312472)
 While in the sametemperature range, S(T) of the reference compound FeAs2, which has aseven-times larger energy gap, amounts to nearly half of that of FeSb2, itsnu(T) and MR(T) are intrinsically different to FeSb2 they are smallerby two orders of magnitude and have no common features.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 30, ',', 2]

FeAs2
###Highly Dispersive Electron Relaxation and Colossal Thermoelectricity in the Correlated Semiconductor FeSb$_2$|Peijie Sun,Wenhu Xu,Jan M. Tomczak,Gabriel Kotliar,Martin Sondergaard,Bo B. Iversen,Frank Steglich###
(312485, 312487)
 While in the sametemperature range, S(T) of the reference compound FeAs2, which has aseven-times larger energy gap, amounts to nearly half of that of FeSb2, itsnu(T) and MR(T) are intrinsically different to FeSb2 they are smallerby two orders of magnitude and have no common features.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 30, ',', 2]

FeSb2
###Highly Dispersive Electron Relaxation and Colossal Thermoelectricity in the Correlated Semiconductor FeSb$_2$|Peijie Sun,Wenhu Xu,Jan M. Tomczak,Gabriel Kotliar,Martin Sondergaard,Bo B. Iversen,Frank Steglich###
(312522, 312524)
 While in the sametemperature range, S(T) of the reference compound FeAs2, which has aseven-times larger energy gap, amounts to nearly half of that of FeSb2, itsnu(T) and MR(T) are intrinsically different to FeSb2 they are smallerby two orders of magnitude and have no common features.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 30, ',', 2]

FeSb2
###Highly Dispersive Electron Relaxation and Colossal Thermoelectricity in the Correlated Semiconductor FeSb$_2$|Peijie Sun,Wenhu Xu,Jan M. Tomczak,Gabriel Kotliar,Martin Sondergaard,Bo B. Iversen,Frank Steglich###
(312551, 312553)
 While in the sametemperature range, S(T) of the reference compound FeAs2, which has aseven-times larger energy gap, amounts to nearly half of that of FeSb2, itsnu(T) and MR(T) are intrinsically different to FeSb2 they are smallerby two orders of magnitude and have no common features.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 30, ',', 2]

FeAs2
###Highly Dispersive Electron Relaxation and Colossal Thermoelectricity in the Correlated Semiconductor FeSb$_2$|Peijie Sun,Wenhu Xu,Jan M. Tomczak,Gabriel Kotliar,Martin Sondergaard,Bo B. Iversen,Frank Steglich###
(312594, 312596)
 With the chargetransport of FeAs2 successfully captured by the density functional theory,we emphasize a significantly dispersive electron-relaxation timetau(epsilonk) due to electron-electron correlations to be at the heart ofthe peculiar thermoelectricity and magnetoresistance of FeSb2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[198.0, 30, ',', 3]

FeSb2
###Highly Dispersive Electron Relaxation and Colossal Thermoelectricity in the Correlated Semiconductor FeSb$_2$|Peijie Sun,Wenhu Xu,Jan M. Tomczak,Gabriel Kotliar,Martin Sondergaard,Bo B. Iversen,Frank Steglich###
(312672, 312674)
 With the chargetransport of FeAs2 successfully captured by the density functional theory,we emphasize a significantly dispersive electron-relaxation timetau(epsilonk) due to electron-electron correlations to be at the heart ofthe peculiar thermoelectricity and magnetoresistance of FeSb2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[276.0, 30, ',', 3]

La0.8Ce0.2MnO3
###Epitaxial stabilization of ultra thin films of electron doped manganites|S. Middey,M. Kareev,D. Meyers,X. Liu,Y. Cao,S. Tripathi,P. Ryan,J. W. Freeland,J. Chakhalian###
(312722, 312728)
 Ultra-thin films of the electron doped manganite La0.8Ce0.2MnO3were grown in a layer-by-layer growth mode on SrTiO3 (001) substrates bypulsed laser interval deposition.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16,0.04,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Epitaxial stabilization of ultra thin films of electron doped manganites|S. Middey,M. Kareev,D. Meyers,X. Liu,Y. Cao,S. Tripathi,P. Ryan,J. W. Freeland,J. Chakhalian###
(312751, 312754)
 Ultra-thin films of the electron doped manganite La0.8Ce0.2MnO3were grown in a layer-by-layer growth mode on SrTiO3 (001) substrates bypulsed laser interval deposition.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ce4
###Epitaxial stabilization of ultra thin films of electron doped manganites|S. Middey,M. Kareev,D. Meyers,X. Liu,Y. Cao,S. Tripathi,P. Ryan,J. W. Freeland,J. Chakhalian###
(312840, 312841)
 Resonant X<missing VAR>-ray absorption spectroscopymeasurements confirm the presence of Ce4 and Mn2 ions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn2
###Epitaxial stabilization of ultra thin films of electron doped manganites|S. Middey,M. Kareev,D. Meyers,X. Liu,Y. Cao,S. Tripathi,P. Ryan,J. W. Freeland,J. Chakhalian###
(312845, 312846)
 Resonant X<missing VAR>-ray absorption spectroscopymeasurements confirm the presence of Ce4 and Mn2 ions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Epitaxial stabilization of ultra thin films of electron doped manganites|S. Middey,M. Kareev,D. Meyers,X. Liu,Y. Cao,S. Tripathi,P. Ryan,J. W. Freeland,J. Chakhalian###
(312851, 312851)
 In addition,the electron doping signature was corroborated by Hall effect measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Epitaxial stabilization of ultra thin films of electron doped manganites|S. Middey,M. Kareev,D. Meyers,X. Liu,Y. Cao,S. Tripathi,P. Ryan,J. W. Freeland,J. Chakhalian###
(312903, 312903)
 Allgrown films show ferromagnetic ground state as revealed by both XMCD<missing VAR> andmagnetoresistance measurements and remain insulating contrary to earlierreports of metal-insulator transition.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Epitaxial stabilization of ultra thin films of electron doped manganites|S. Middey,M. Kareev,D. Meyers,X. Liu,Y. Cao,S. Tripathi,P. Ryan,J. W. Freeland,J. Chakhalian###
(312967, 312967)
 Our results hint at the possibility ofelectron-hole asymmetry in the colossal magnetoresistive (CMR) manganite phasediagram akin to high-Tc cuprates.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbSb2
###Anisotropic giant magnetoresistance in NbSb2|Kefeng Wang,D. Graf,Lijun Li,C. Petrovic###
(313007, 313009)
Anisotropic giant magnetoresistance in NbSb2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 5, '%', 1],[30.0, 2, 'K', 1],[33.0, 9, 'T', 1],[44.0, 6, '%', 1],[48.0, 0.4, 'K', 1],[52.0, 32, 'T', 1]

NbSb2
###Anisotropic giant magnetoresistance in NbSb2|Kefeng Wang,D. Graf,Lijun Li,C. Petrovic###
(313098, 313100)
 The extremely large transverse magnetoreistance (the magnetoresistant ratiosim 1.3times105% in 2 K and 9 T field, and 4.3times 106% in 0.4 Kand 32 T field, without saturation), and the metal-semiconductor crossoverinduced by magnetic field, are reported in NbSb2 single crystal withelectric current parallel to the b<missing VAR>-axis.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 5, '%', 0],[59.0, 2, 'K', 0],[56.0, 9, 'T', 0],[45.0, 6, '%', 0],[41.0, 0.4, 'K', 0],[37.0, 32, 'T', 0]

Cd3As2
###Large linear magnetoresistance in Dirac semi-metal Cd3As2 with Fermi surfaces close to the Dirac points|Junya Feng,Yuan Pang,Desheng Wu,Zhijun Wang,Hongming Weng,Jianqi Li,Xi Dai,Zhong Fang,Youguo Shi,Li Lu###
(313314, 313317)
Large linear magnetoresistance in Dirac semi-metal Cd3As2 with Fermi surfaces close to the Dirac points.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 3100, '%', 2]

Cd3As2
###Large linear magnetoresistance in Dirac semi-metal Cd3As2 with Fermi surfaces close to the Dirac points|Junya Feng,Yuan Pang,Desheng Wu,Zhijun Wang,Hongming Weng,Jianqi Li,Xi Dai,Zhong Fang,Youguo Shi,Li Lu###
(313356, 313359)
 We have investigated the magnetoresistive behavior of Dirac semi-metal Cd3As2down to low temperatures and in high magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 3100, '%', 1]

Cd3As2
###Large linear magnetoresistance in Dirac semi-metal Cd3As2 with Fermi surfaces close to the Dirac points|Junya Feng,Yuan Pang,Desheng Wu,Zhijun Wang,Hongming Weng,Jianqi Li,Xi Dai,Zhong Fang,Youguo Shi,Li Lu###
(313439, 313442)
 A positive and linearmagnetoresistance (LMR) as large as 3100% is observed in a magnetic field of 14T<missing VAR>, on high-quality single crystals of Cd3As2 with ultra-low electron densityand large Lande g<missing VAR> factor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 3100, '%', 0]

In
###Transversal magnetoresistance in Weyl semimetals|J. Klier,I. V. Gornyi,A. D. Mirlin###
(313814, 313814)
 Inparticular, the magnetoresitance is non-monotonous for the white-noise disordermodel.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Transversal magnetoresistance in Weyl semimetals|J. Klier,I. V. Gornyi,A. D. Mirlin###
(313846, 313846)
 For Hto 0 the magnetoresistance for short-range impurities vanishesin a non-analytic way as H1/3.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H1
###Transversal magnetoresistance in Weyl semimetals|J. Klier,I. V. Gornyi,A. D. Mirlin###
(313878, 313879)
 For Hto 0 the magnetoresistance for short-range impurities vanishesin a non-analytic way as H1/3.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Transversal magnetoresistance in Weyl semimetals|J. Klier,I. V. Gornyi,A. D. Mirlin###
(313884, 313884)
 In the limits of strongest magnetic fieldsH, the magnetoresistivity vanishes as 1/H for pointlike impurities, whileit is linear and positive in the model with Coulomb impurities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Transversal magnetoresistance in Weyl semimetals|J. Klier,I. V. Gornyi,A. D. Mirlin###
(313899, 313899)
 In the limits of strongest magnetic fieldsH, the magnetoresistivity vanishes as 1/H for pointlike impurities, whileit is linear and positive in the model with Coulomb impurities.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Transversal magnetoresistance in Weyl semimetals|J. Klier,I. V. Gornyi,A. D. Mirlin###
(313912, 313912)
 In the limits of strongest magnetic fieldsH, the magnetoresistivity vanishes as 1/H for pointlike impurities, whileit is linear and positive in the model with Coulomb impurities.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NC
###Electrical detection of magnetic skyrmions by non-collinear magnetoresistance|Christian Hanneken,Fabian Otte,André Kubetzka,Bertrand Dupé,Niklas Romming,Kirsten von Bergmann,Roland Wiesendanger,Stefan Heinze###
(314227, 314228)
 We proposethis non-collinear magnetoresistance (NCMR) as a reliable all-electricaldetection scheme for skyrmions with an easy implementation into devicearchitectures.
Featurization terminated normally.
0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TaP
###Pi Berry phase and Zeeman splitting of TaP probed by high field magnetotransport measurements|J. Hu,J. Y. Liu,D. Graf,S. M. A Radmanesh,D. J. Adams,A. Chuang,Y. Wang,I. Chiorescu,J. Wei,L. Spinu,Z. Q. Mao###
(314290, 314291)
Pi Berry phase and Zeeman splitting of TaP probed by high field magnetotransport measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 31, 'T', 2]

In
###Pi Berry phase and Zeeman splitting of TaP probed by high field magnetotransport measurements|J. Hu,J. Y. Liu,D. Graf,S. M. A Radmanesh,D. J. Adams,A. Chuang,Y. Wang,I. Chiorescu,J. Wei,L. Spinu,Z. Q. Mao###
(314357, 314357)
 In this work, we report the quantum transport ofTaP single crystals in magnetic field up to 31T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 31, 'T', 0]

TaP
###Pi Berry phase and Zeeman splitting of TaP probed by high field magnetotransport measurements|J. Hu,J. Y. Liu,D. Graf,S. M. A Radmanesh,D. J. Adams,A. Chuang,Y. Wang,I. Chiorescu,J. Wei,L. Spinu,Z. Q. Mao###
(314377, 314378)
 In this work, we report the quantum transport ofTaP single crystals in magnetic field up to 31T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 31, 'T', 0]

TaP
###Pi Berry phase and Zeeman splitting of TaP probed by high field magnetotransport measurements|J. Hu,J. Y. Liu,D. Graf,S. M. A Radmanesh,D. J. Adams,A. Chuang,Y. Wang,I. Chiorescu,J. Wei,L. Spinu,Z. Q. Mao###
(314416, 314417)
 Through the analyses of ourmagnetotransport data, we show TaP has the signatures of a Weyl state,including light effective quasiparticle masses, ultrahigh carrier mobility, aswell as negative longitudinal magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 31, 'T', 1]

H
###Pi Berry phase and Zeeman splitting of TaP probed by high field magnetotransport measurements|J. Hu,J. Y. Liu,D. Graf,S. M. A Radmanesh,D. J. Adams,A. Chuang,Y. Wang,I. Chiorescu,J. Wei,L. Spinu,Z. Q. Mao###
(314495, 314495)
 Furthermore, we havegeneralized the Lifshitz-Kosevich formula for Shubnikov-de Haas (SdH)oscillations with multi-frequencies, and determined the non-trivial Berry phaseof Pi for multiple Fermi pockets in TaP through the direct fitting of thequantum oscillations.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 31, 'T', 2]

TaP
###Pi Berry phase and Zeeman splitting of TaP probed by high field magnetotransport measurements|J. Hu,J. Y. Liu,D. Graf,S. M. A Radmanesh,D. J. Adams,A. Chuang,Y. Wang,I. Chiorescu,J. Wei,L. Spinu,Z. Q. Mao###
(314537, 314538)
 Furthermore, we havegeneralized the Lifshitz-Kosevich formula for Shubnikov-de Haas (SdH)oscillations with multi-frequencies, and determined the non-trivial Berry phaseof Pi for multiple Fermi pockets in TaP through the direct fitting of thequantum oscillations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 31, 'T', 2]

In
###Pi Berry phase and Zeeman splitting of TaP probed by high field magnetotransport measurements|J. Hu,J. Y. Liu,D. Graf,S. M. A Radmanesh,D. J. Adams,A. Chuang,Y. Wang,I. Chiorescu,J. Wei,L. Spinu,Z. Q. Mao###
(314558, 314558)
 In high fields, we also probed signatures of Zeemansplitting, from which the Lande g-factor is extracted.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 31, 'T', 3]

Bi2Se3-x
###Magneto-transport behaviour of Bi2Se3-xTex: Role of disorder|E. P. Amaladass,T. R. Devidas,Shilpam Sharma,C. S. Sundar,A. Bharathi,Awadhesh Mani###
(314615, 314620)
Magneto-transport behaviour of Bi2Se3-xTex Role of disorder.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[49.0, 0, 'to', 1],[55.0, 4, 'to', 1],[56.0, 300, 'K', 1],[73.0, 15, 'T', 1]

Bi2Se3-x
###Magneto-transport behaviour of Bi2Se3-xTex: Role of disorder|E. P. Amaladass,T. R. Devidas,Shilpam Sharma,C. S. Sundar,A. Bharathi,Awadhesh Mani###
(314659, 314664)
 Magnetoresistance and Hall resistance measurements have been carried out infastcooled single crystals of Bi2Se3-xTex (x<missing VAR> 0 to 2) in 4 to 300 K temperaturerange, under magnetic fields up to 15 T.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[5.0, 0, 'to', 0],[11.0, 4, 'to', 0],[12.0, 300, 'K', 0],[29.0, 15, 'T', 0]

Bi2Se3
###Magneto-transport behaviour of Bi2Se3-xTex: Role of disorder|E. P. Amaladass,T. R. Devidas,Shilpam Sharma,C. S. Sundar,A. Bharathi,Awadhesh Mani###
(314723, 314726)
 The variation of resistivity withtemperature that points to a metallic behaviour in Bi2Se3, shows an upturn atlow temperatures in the Te doped samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 0, 'to', 1],[48.0, 4, 'to', 1],[47.0, 300, 'K', 1],[30.0, 15, 'T', 1]

Te
###Magneto-transport behaviour of Bi2Se3-xTex: Role of disorder|E. P. Amaladass,T. R. Devidas,Shilpam Sharma,C. S. Sundar,A. Bharathi,Awadhesh Mani###
(314746, 314746)
 The variation of resistivity withtemperature that points to a metallic behaviour in Bi2Se3, shows an upturn atlow temperatures in the Te doped samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 0, 'to', 1],[71.0, 4, 'to', 1],[70.0, 300, 'K', 1],[53.0, 15, 'T', 1]

Bi2Se3
###Magneto-transport behaviour of Bi2Se3-xTex: Role of disorder|E. P. Amaladass,T. R. Devidas,Shilpam Sharma,C. S. Sundar,A. Bharathi,Awadhesh Mani###
(314760, 314763)
 Magnetoresistance measurements inBi2Se3 show clear signatures of Shubnikov de Hass oscillations that getssuppressed in the Te doped samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 0, 'to', 2],[85.0, 4, 'to', 2],[84.0, 300, 'K', 2],[67.0, 15, 'T', 2]

Te
###Magneto-transport behaviour of Bi2Se3-xTex: Role of disorder|E. P. Amaladass,T. R. Devidas,Shilpam Sharma,C. S. Sundar,A. Bharathi,Awadhesh Mani###
(314792, 314792)
 Magnetoresistance measurements inBi2Se3 show clear signatures of Shubnikov de Hass oscillations that getssuppressed in the Te doped samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 0, 'to', 2],[117.0, 4, 'to', 2],[116.0, 300, 'K', 2],[99.0, 15, 'T', 2]

In
###Magneto-transport behaviour of Bi2Se3-xTex: Role of disorder|E. P. Amaladass,T. R. Devidas,Shilpam Sharma,C. S. Sundar,A. Bharathi,Awadhesh Mani###
(314799, 314799)
 In the Bi2SeTe2 sample, themagneto-resistance shows a cusp like positive magneto-resistance at lowmagnetic fields and low temperatures, a feature associated with weakantilocalisation (WAL), that crosses over to negative magneto-resistance athigher fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 0, 'to', 3],[124.0, 4, 'to', 3],[123.0, 300, 'K', 3],[106.0, 15, 'T', 3]

Bi2SeTe2
###Magneto-transport behaviour of Bi2Se3-xTex: Role of disorder|E. P. Amaladass,T. R. Devidas,Shilpam Sharma,C. S. Sundar,A. Bharathi,Awadhesh Mani###
(314803, 314807)
 In the Bi2SeTe2 sample, themagneto-resistance shows a cusp like positive magneto-resistance at lowmagnetic fields and low temperatures, a feature associated with weakantilocalisation (WAL), that crosses over to negative magneto-resistance athigher fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 0, 'to', 3],[128.0, 4, 'to', 3],[127.0, 300, 'K', 3],[110.0, 15, 'T', 3]

W
###Magneto-transport behaviour of Bi2Se3-xTex: Role of disorder|E. P. Amaladass,T. R. Devidas,Shilpam Sharma,C. S. Sundar,A. Bharathi,Awadhesh Mani###
(314863, 314863)
 In the Bi2SeTe2 sample, themagneto-resistance shows a cusp like positive magneto-resistance at lowmagnetic fields and low temperatures, a feature associated with weakantilocalisation (WAL), that crosses over to negative magneto-resistance athigher fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[194.0, 0, 'to', 3],[188.0, 4, 'to', 3],[187.0, 300, 'K', 3],[170.0, 15, 'T', 3]

Bi2SeTe2
###Magneto-transport behaviour of Bi2Se3-xTex: Role of disorder|E. P. Amaladass,T. R. Devidas,Shilpam Sharma,C. S. Sundar,A. Bharathi,Awadhesh Mani###
(314906, 314910)
 The qualitatively different magnetotransport behaviour seen inBi2SeTe2 as compared to Bi2Se3 is rationalised in terms of the disorder,through an estimate of the carrier density, carrier mobility and an analysis interms of the Ioffe Regel criterion with support from Hall Effect measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[237.0, 0, 'to', 4],[231.0, 4, 'to', 4],[230.0, 300, 'K', 4],[213.0, 15, 'T', 4]

Bi2Se3
###Magneto-transport behaviour of Bi2Se3-xTex: Role of disorder|E. P. Amaladass,T. R. Devidas,Shilpam Sharma,C. S. Sundar,A. Bharathi,Awadhesh Mani###
(314918, 314921)
 The qualitatively different magnetotransport behaviour seen inBi2SeTe2 as compared to Bi2Se3 is rationalised in terms of the disorder,through an estimate of the carrier density, carrier mobility and an analysis interms of the Ioffe Regel criterion with support from Hall Effect measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[249.0, 0, 'to', 4],[243.0, 4, 'to', 4],[242.0, 300, 'K', 4],[225.0, 15, 'T', 4]

LaAgSb2
###Multiband effects and the possible Dirac states in LaAgSb$_2$|Kefeng Wang,C. Petrovic###
(315016, 315019)
Multiband effects and the possible Dirac states in LaAgSb2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0.5,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaAgSb2
###Multiband effects and the possible Dirac states in LaAgSb$_2$|Kefeng Wang,C. Petrovic###
(315058, 315061)
 Here we report the possible signature of Dirac fermions in themagnetoresistance, Hall resistivity and magnetothermopower of LaAgSb2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0.5,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

IS
###Low-frequency noise characterization of a magnetic field monitoring system using an anisotropic magnetoresistance|I. Mateos,J. Ramos-Castro,A. Lobo###
(315451, 315452)
 A detailed study about magnetic sensing techniques based on anisotropicmagnetoresistive sensors shows that the technology is suitable forlow-frequency space applications like the eLISA mission.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[223.0, 0.1, ',', 4],[230.0, -1, ',', 4]

In
###Low-frequency noise characterization of a magnetic field monitoring system using an anisotropic magnetoresistance|I. Mateos,J. Ramos-Castro,A. Lobo###
(315581, 315581)
 In addition, a low-frequency noise analysis of the signalconditioning circuits has been performed in order to identify and minimize thedifferent main contributions from the overall noise.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 0.1, ',', 1],[101.0, -1, ',', 1]

IS
###Low-frequency noise characterization of a magnetic field monitoring system using an anisotropic magnetoresistance|I. Mateos,J. Ramos-Castro,A. Lobo###
(315668, 315669)
 The results for chip-scalemagnetoresistances exhibit similar noise along the eLISA bandwidth (0.1,rmm<missing VAR>Hz-1,rm Hz) to the noise measured by means of the voluminous fluxgatemagnetometers used in its precursor mission, known as L<missing VAR>ISA Pathfinder.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 0.1, ',', 0],[13.0, -1, ',', 0]

IS
###Low-frequency noise characterization of a magnetic field monitoring system using an anisotropic magnetoresistance|I. Mateos,J. Ramos-Castro,A. Lobo###
(315729, 315730)
 The results for chip-scalemagnetoresistances exhibit similar noise along the eLISA bandwidth (0.1,rmm<missing VAR>Hz-1,rm Hz) to the noise measured by means of the voluminous fluxgatemagnetometers used in its precursor mission, known as L<missing VAR>ISA Pathfinder.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 0.1, ',', 0],[47.0, -1, ',', 0]

Mn
###Observation, Evidence and Origin of Room Temperature Magnetodielectric Effect in Mn doped LaGaO3|Hari Mohan Rai,Shailendra K. Saxena,Vikash Mishra,Rajesh Kumar,Pankaj R. Sagdeo###
(315765, 315765)
Observation, Evidence and Origin of Room Temperature Magnetodielectric Effect in Mn doped LaGaO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaGaO3
###Observation, Evidence and Origin of Room Temperature Magnetodielectric Effect in Mn doped LaGaO3|Hari Mohan Rai,Shailendra K. Saxena,Vikash Mishra,Rajesh Kumar,Pankaj R. Sagdeo###
(315769, 315772)
Observation, Evidence and Origin of Room Temperature Magnetodielectric Effect in Mn doped LaGaO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Observation, Evidence and Origin of Room Temperature Magnetodielectric Effect in Mn doped LaGaO3|Hari Mohan Rai,Shailendra K. Saxena,Vikash Mishra,Rajesh Kumar,Pankaj R. Sagdeo###
(315803, 315803)
 We report an observation of room temperature magnetodielectric (RTMD) effectin Mn doped LaGaO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaGaO3
###Observation, Evidence and Origin of Room Temperature Magnetodielectric Effect in Mn doped LaGaO3|Hari Mohan Rai,Shailendra K. Saxena,Vikash Mishra,Rajesh Kumar,Pankaj R. Sagdeo###
(315807, 315810)
 We report an observation of room temperature magnetodielectric (RTMD) effectin Mn doped LaGaO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Observation, Evidence and Origin of Room Temperature Magnetodielectric Effect in Mn doped LaGaO3|Hari Mohan Rai,Shailendra K. Saxena,Vikash Mishra,Rajesh Kumar,Pankaj R. Sagdeo###
(315824, 315824)
 Results of frequency dependent magnetoresistance (FDMR)measurements discards the possibility of any magnetoresistive contribution inthe observed MD effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Observation, Evidence and Origin of Room Temperature Magnetodielectric Effect in Mn doped LaGaO3|Hari Mohan Rai,Shailendra K. Saxena,Vikash Mishra,Rajesh Kumar,Pankaj R. Sagdeo###
(315934, 315934)
 The intrinsic nature of MD coupling has beenvalidated/evidenced by means of magnetic field dependent Raman spectroscopy andexplained in terms of modified volume strain governed by magnetic field inducedrerotation of spin coupled Mn-orbitals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(SS)
###Observation, Evidence and Origin of Room Temperature Magnetodielectric Effect in Mn doped LaGaO3|Hari Mohan Rai,Shailendra K. Saxena,Vikash Mishra,Rajesh Kumar,Pankaj R. Sagdeo###
(316002, 316005)
 Ultimately, present RTMD effect isattributed to magneto-compression/magnetostriction associated with spin-phononcoupling as evidenced in the form of magnetic field induced hardening ofsymmetric stretching (SS) MnO6 octahedral Raman modes.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnO6
###Observation, Evidence and Origin of Room Temperature Magnetodielectric Effect in Mn doped LaGaO3|Hari Mohan Rai,Shailendra K. Saxena,Vikash Mishra,Rajesh Kumar,Pankaj R. Sagdeo###
(316007, 316009)
 Ultimately, present RTMD effect isattributed to magneto-compression/magnetostriction associated with spin-phononcoupling as evidenced in the form of magnetic field induced hardening ofsymmetric stretching (SS) MnO6 octahedral Raman modes.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Observation, Evidence and Origin of Room Temperature Magnetodielectric Effect in Mn doped LaGaO3|Hari Mohan Rai,Shailendra K. Saxena,Vikash Mishra,Rajesh Kumar,Pankaj R. Sagdeo###
(316022, 316022)
 Presently studied Mndoped LaGaO3 can be a candidate for magnetodielectric applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaGaO3
###Observation, Evidence and Origin of Room Temperature Magnetodielectric Effect in Mn doped LaGaO3|Hari Mohan Rai,Shailendra K. Saxena,Vikash Mishra,Rajesh Kumar,Pankaj R. Sagdeo###
(316027, 316030)
 Presently studied Mndoped LaGaO3 can be a candidate for magnetodielectric applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magnetoresistance in copper at high frequency and high magnetic fields|Saebyeok Ahn,Sung Woo Youn,Jonghee Yoo,Dong Lak Kim,Junu Jeong,Moohyun Ahn,Jongkuk Kim,Doyu Lee,Jiyoung Lee,Taehyeon Seong,Yannis K. Semertzidis###
(316076, 316076)
 In halo dark matter axion search experiments, cylindrical microwave cavitiesare typically employed to detect signals from the axion-photon conversion.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[215.0, 15, 'T', 3],[293.0, 10, 'GHz', 5],[306.0, 10, 'T', 5]

Zn0.9Co0.1OAl
###Transverse Magnetoresistance of Zn$_{0.9}$Co$_{0.1}$O:Al Thin Films|R. Martínez-Valdez,H. J. Jiménez-González,L. Angelats-Silva,M. Tomar###
(316400, 316405)
Transverse Magnetoresistance of Zn0.9Co0.1OAl Thin Films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0.03333333333333333,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 5, 'to', 1],[60.0, 100, 'K', 1],[96.0, 200, 'nm', 2],[120.0, 0.1, 'and', 3],[130.0, 5.5, '%', 3],[187.0, 4, 'T', 4]

Zn1-xCo
###Transverse Magnetoresistance of Zn$_{0.9}$Co$_{0.1}$O:Al Thin Films|R. Martínez-Valdez,H. J. Jiménez-González,L. Angelats-Silva,M. Tomar###
(316435, 316439)
 The transverse magnetoresistance of thin films of the Diluted MagneticSemiconductor Zn1-xCox<missing VAR>OAl on glass was studied for temperatures inthe range of 5 to 100 K.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[25.0, 5, 'to', 0],[26.0, 100, 'K', 0],[62.0, 200, 'nm', 1],[86.0, 0.1, 'and', 2],[96.0, 5.5, '%', 2],[153.0, 4, 'T', 3]

OAl
###Transverse Magnetoresistance of Zn$_{0.9}$Co$_{0.1}$O:Al Thin Films|R. Martínez-Valdez,H. J. Jiménez-González,L. Angelats-Silva,M. Tomar###
(316441, 316442)
 The transverse magnetoresistance of thin films of the Diluted MagneticSemiconductor Zn1-xCox<missing VAR>OAl on glass was studied for temperatures inthe range of 5 to 100 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 5, 'to', 0],[23.0, 100, 'K', 0],[59.0, 200, 'nm', 1],[83.0, 0.1, 'and', 2],[93.0, 5.5, '%', 2],[150.0, 4, 'T', 3]

ZnO
###Transverse Magnetoresistance of Zn$_{0.9}$Co$_{0.1}$O:Al Thin Films|R. Martínez-Valdez,H. J. Jiménez-González,L. Angelats-Silva,M. Tomar###
(316504, 316505)
 ZnO was alloyedwith Co to a concentration x<missing VAR> of 0.1 and co-doped with a 5.5% wt concentrationof Al.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 5, 'to', 2],[39.0, 100, 'K', 2],[3.0, 200, 'nm', 1],[20.0, 0.1, 'and', 0],[30.0, 5.5, '%', 0],[87.0, 4, 'T', 1]

Co
###Transverse Magnetoresistance of Zn$_{0.9}$Co$_{0.1}$O:Al Thin Films|R. Martínez-Valdez,H. J. Jiménez-González,L. Angelats-Silva,M. Tomar###
(316514, 316514)
 ZnO was alloyedwith Co to a concentration x<missing VAR> of 0.1 and co-doped with a 5.5% wt concentrationof Al.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 5, 'to', 2],[49.0, 100, 'K', 2],[13.0, 200, 'nm', 1],[11.0, 0.1, 'and', 0],[21.0, 5.5, '%', 0],[78.0, 4, 'T', 1]

Al
###Transverse Magnetoresistance of Zn$_{0.9}$Co$_{0.1}$O:Al Thin Films|R. Martínez-Valdez,H. J. Jiménez-González,L. Angelats-Silva,M. Tomar###
(316545, 316545)
 ZnO was alloyedwith Co to a concentration x<missing VAR> of 0.1 and co-doped with a 5.5% wt concentrationof Al.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 5, 'to', 2],[80.0, 100, 'K', 2],[44.0, 200, 'nm', 1],[20.0, 0.1, 'and', 0],[10.0, 5.5, '%', 0],[47.0, 4, 'T', 1]

ZnO
###Transverse Magnetoresistance of Zn$_{0.9}$Co$_{0.1}$O:Al Thin Films|R. Martínez-Valdez,H. J. Jiménez-González,L. Angelats-Silva,M. Tomar###
(316667, 316668)
 The experimental results of themagnetoresistance have been interpreted by means of a semiclassical model thatcombines a relaxation-time approximation to describe scattering processes inZnO and a phenomenological approach to the spin-disorder scattering due to theindirect exchange interaction of the magnetic impurities.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[203.0, 5, 'to', 4],[202.0, 100, 'K', 4],[166.0, 200, 'nm', 3],[142.0, 0.1, 'and', 2],[132.0, 5.5, '%', 2],[75.0, 4, 'T', 1]

ZrTe
###Magnetotransport properties of the new-type topological semimetal ZrTe|W. L. Zhu,J. B. He,S. Zhang,D. Chen,L. Shan,Z. A. Ren,G. F. Chen###
(316734, 316735)
Magnetotransport properties of the new-type topological semimetal ZrTe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZrTe
###Magnetotransport properties of the new-type topological semimetal ZrTe|W. L. Zhu,J. B. He,S. Zhang,D. Chen,L. Shan,Z. A. Ren,G. F. Chen###
(316783, 316784)
 We report the first experimental results of the magnetoresistance, Halleffect, and quantum Shubnikov-de Haas oscillations on single crystals of ZrTe,which was recently predicted to be a new type of topological semimetal hostingboth triply degenerate crossing points and Weyl fermion state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZrTe
###Magnetotransport properties of the new-type topological semimetal ZrTe|W. L. Zhu,J. B. He,S. Zhang,D. Chen,L. Shan,Z. A. Ren,G. F. Chen###
(316855, 316856)
 The analysis ofHall effect and quantum oscillations indicate that ZrTe is a multiband systemwith low carrier density, high carrier mobility, small cross-sectional area ofFermi surface, and light cyclotron effective mass, as observed in manytopological semimetals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZrTe
###Magnetotransport properties of the new-type topological semimetal ZrTe|W. L. Zhu,J. B. He,S. Zhang,D. Chen,L. Shan,Z. A. Ren,G. F. Chen###
(316957, 316958)
 Meanwhile, the angular dependence of themagnetoresistance and the quantum-oscillation frequencies further suggest thatZrTe possesses a three-dimensional Fermi surface that is rather complex.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PrSb
###Extremely large magnetoresistance and Fermi surface topology of PrSb|F. Wu,C. Y. Guo,M. Smidman,J. L. Zhang,H. Q. Yuan###
(317056, 317057)
Extremely large magnetoresistance and Fermi surface topology of PrSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PrSb
###Extremely large magnetoresistance and Fermi surface topology of PrSb|F. Wu,C. Y. Guo,M. Smidman,J. L. Zhang,H. Q. Yuan###
(317070, 317071)
 We report magnetotransport measurements of PrSb in high magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PrSb
###Extremely large magnetoresistance and Fermi surface topology of PrSb|F. Wu,C. Y. Guo,M. Smidman,J. L. Zhang,H. Q. Yuan###
(317091, 317092)
 Ourresults show that PrSb exhibits extremely large magnetoresistance(XMR) at lowtemperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Extremely large magnetoresistance and Fermi surface topology of PrSb|F. Wu,C. Y. Guo,M. Smidman,J. L. Zhang,H. Q. Yuan###
(317150, 317150)
 Meanwhile angle-dependent magnetoresistance measurements wereused to probe the Fermi surface via Shubnikov-de Haas (SdH) oscillations.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Spin superfluid Josephson oscillator|Yizhou Liu,Igor Barsukov,Ilya Krivorotov,Yafis Barlas,Roger K. Lake###
(317649, 317649)
 As an experimentalcharacterization method, electrical measurements of spin superfluid Josephsonjunctions can provide additional signatures of spin superfluidity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pr2CuO4
###Tunable superconductivity in parent cuprate Pr$_{2}$CuO$_{4\pmδ}$ thin films|Xinjian Wei,Ge He,Wei Hu,Xu Zhang,Mingyang Qin,Jie Yuan,Beiyi Zhu,Yuan Lin,Kui Jin###
(317709, 317713)
Tunable superconductivity in parent cuprate Pr2CuO4pm thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Tunable superconductivity in parent cuprate Pr$_{2}$CuO$_{4\pmδ}$ thin films|Xinjian Wei,Ge He,Wei Hu,Xu Zhang,Mingyang Qin,Jie Yuan,Beiyi Zhu,Yuan Lin,Kui Jin###
(317721, 317721)
 In this article, we studied the role of oxygen in Pr2CuO4pmdeltathin films fabricated by polymer assisted deposition method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pr2CuO4
###Tunable superconductivity in parent cuprate Pr$_{2}$CuO$_{4\pmδ}$ thin films|Xinjian Wei,Ge He,Wei Hu,Xu Zhang,Mingyang Qin,Jie Yuan,Beiyi Zhu,Yuan Lin,Kui Jin###
(317742, 317746)
 In this article, we studied the role of oxygen in Pr2CuO4pmdeltathin films fabricated by polymer assisted deposition method.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pr2CuO4
###Tunable superconductivity in parent cuprate Pr$_{2}$CuO$_{4\pmδ}$ thin films|Xinjian Wei,Ge He,Wei Hu,Xu Zhang,Mingyang Qin,Jie Yuan,Beiyi Zhu,Yuan Lin,Kui Jin###
(317781, 317785)
 Themagnetoresistance and Hall resistivity of Pr2CuO4pmdelta sampleswere systematically investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Tunable superconductivity in parent cuprate Pr$_{2}$CuO$_{4\pmδ}$ thin films|Xinjian Wei,Ge He,Wei Hu,Xu Zhang,Mingyang Qin,Jie Yuan,Beiyi Zhu,Yuan Lin,Kui Jin###
(317831, 317831)
 It is found that with decreasing the oxygencontent, the low-temperature Hall coefficient (R<missing VAR>H) and magnetoresistancechange from negative to positive, similar to those with the increase ofCe-doped concentration in R<missing VAR>2-xCexCuO4 (R<missing VAR> La, Nd, Pr, Sm, Eu).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ce
###Tunable superconductivity in parent cuprate Pr$_{2}$CuO$_{4\pmδ}$ thin films|Xinjian Wei,Ge He,Wei Hu,Xu Zhang,Mingyang Qin,Jie Yuan,Beiyi Zhu,Yuan Lin,Kui Jin###
(317865, 317865)
 It is found that with decreasing the oxygencontent, the low-temperature Hall coefficient (R<missing VAR>H) and magnetoresistancechange from negative to positive, similar to those with the increase ofCe-doped concentration in R<missing VAR>2-xCexCuO4 (R<missing VAR> La, Nd, Pr, Sm, Eu).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CuO4
###Tunable superconductivity in parent cuprate Pr$_{2}$CuO$_{4\pmδ}$ thin films|Xinjian Wei,Ge He,Wei Hu,Xu Zhang,Mingyang Qin,Jie Yuan,Beiyi Zhu,Yuan Lin,Kui Jin###
(317879, 317881)
 It is found that with decreasing the oxygencontent, the low-temperature Hall coefficient (R<missing VAR>H) and magnetoresistancechange from negative to positive, similar to those with the increase ofCe-doped concentration in R<missing VAR>2-xCexCuO4 (R<missing VAR> La, Nd, Pr, Sm, Eu).
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La
###Tunable superconductivity in parent cuprate Pr$_{2}$CuO$_{4\pmδ}$ thin films|Xinjian Wei,Ge He,Wei Hu,Xu Zhang,Mingyang Qin,Jie Yuan,Beiyi Zhu,Yuan Lin,Kui Jin###
(317886, 317886)
 It is found that with decreasing the oxygencontent, the low-temperature Hall coefficient (R<missing VAR>H) and magnetoresistancechange from negative to positive, similar to those with the increase ofCe-doped concentration in R<missing VAR>2-xCexCuO4 (R<missing VAR> La, Nd, Pr, Sm, Eu).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nd
###Tunable superconductivity in parent cuprate Pr$_{2}$CuO$_{4\pmδ}$ thin films|Xinjian Wei,Ge He,Wei Hu,Xu Zhang,Mingyang Qin,Jie Yuan,Beiyi Zhu,Yuan Lin,Kui Jin###
(317889, 317889)
 It is found that with decreasing the oxygencontent, the low-temperature Hall coefficient (R<missing VAR>H) and magnetoresistancechange from negative to positive, similar to those with the increase ofCe-doped concentration in R<missing VAR>2-xCexCuO4 (R<missing VAR> La, Nd, Pr, Sm, Eu).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pr
###Tunable superconductivity in parent cuprate Pr$_{2}$CuO$_{4\pmδ}$ thin films|Xinjian Wei,Ge He,Wei Hu,Xu Zhang,Mingyang Qin,Jie Yuan,Beiyi Zhu,Yuan Lin,Kui Jin###
(317892, 317892)
 It is found that with decreasing the oxygencontent, the low-temperature Hall coefficient (R<missing VAR>H) and magnetoresistancechange from negative to positive, similar to those with the increase ofCe-doped concentration in R<missing VAR>2-xCexCuO4 (R<missing VAR> La, Nd, Pr, Sm, Eu).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sm
###Tunable superconductivity in parent cuprate Pr$_{2}$CuO$_{4\pmδ}$ thin films|Xinjian Wei,Ge He,Wei Hu,Xu Zhang,Mingyang Qin,Jie Yuan,Beiyi Zhu,Yuan Lin,Kui Jin###
(317895, 317895)
 It is found that with decreasing the oxygencontent, the low-temperature Hall coefficient (R<missing VAR>H) and magnetoresistancechange from negative to positive, similar to those with the increase ofCe-doped concentration in R<missing VAR>2-xCexCuO4 (R<missing VAR> La, Nd, Pr, Sm, Eu).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Eu
###Tunable superconductivity in parent cuprate Pr$_{2}$CuO$_{4\pmδ}$ thin films|Xinjian Wei,Ge He,Wei Hu,Xu Zhang,Mingyang Qin,Jie Yuan,Beiyi Zhu,Yuan Lin,Kui Jin###
(317898, 317898)
 It is found that with decreasing the oxygencontent, the low-temperature Hall coefficient (R<missing VAR>H) and magnetoresistancechange from negative to positive, similar to those with the increase ofCe-doped concentration in R<missing VAR>2-xCexCuO4 (R<missing VAR> La, Nd, Pr, Sm, Eu).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Tunable superconductivity in parent cuprate Pr$_{2}$CuO$_{4\pmδ}$ thin films|Xinjian Wei,Ge He,Wei Hu,Xu Zhang,Mingyang Qin,Jie Yuan,Beiyi Zhu,Yuan Lin,Kui Jin###
(317903, 317903)
In addition, Tc versus R<missing VAR>H for both Pr1-xLaCex<missing VAR>CuO4 andPr2CuO4pmdelta samples can coincide with each other.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Tunable superconductivity in parent cuprate Pr$_{2}$CuO$_{4\pmδ}$ thin films|Xinjian Wei,Ge He,Wei Hu,Xu Zhang,Mingyang Qin,Jie Yuan,Beiyi Zhu,Yuan Lin,Kui Jin###
(317914, 317914)
In addition, Tc versus R<missing VAR>H for both Pr1-xLaCex<missing VAR>CuO4 andPr2CuO4pmdelta samples can coincide with each other.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pr1-xLaCe
###Tunable superconductivity in parent cuprate Pr$_{2}$CuO$_{4\pmδ}$ thin films|Xinjian Wei,Ge He,Wei Hu,Xu Zhang,Mingyang Qin,Jie Yuan,Beiyi Zhu,Yuan Lin,Kui Jin###
(317920, 317925)
In addition, Tc versus R<missing VAR>H for both Pr1-xLaCex<missing VAR>CuO4 andPr2CuO4pmdelta samples can coincide with each other.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

CuO4
###Tunable superconductivity in parent cuprate Pr$_{2}$CuO$_{4\pmδ}$ thin films|Xinjian Wei,Ge He,Wei Hu,Xu Zhang,Mingyang Qin,Jie Yuan,Beiyi Zhu,Yuan Lin,Kui Jin###
(317927, 317929)
In addition, Tc versus R<missing VAR>H for both Pr1-xLaCex<missing VAR>CuO4 andPr2CuO4pmdelta samples can coincide with each other.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pr2CuO4
###Tunable superconductivity in parent cuprate Pr$_{2}$CuO$_{4\pmδ}$ thin films|Xinjian Wei,Ge He,Wei Hu,Xu Zhang,Mingyang Qin,Jie Yuan,Beiyi Zhu,Yuan Lin,Kui Jin###
(317934, 317938)
In addition, Tc versus R<missing VAR>H for both Pr1-xLaCex<missing VAR>CuO4 andPr2CuO4pmdelta samples can coincide with each other.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Effect of B-site bismuth doping on magnetic and transport properties of La0.5Ca0.5Mn1-xBixO3 thin films|Himanshu Sharma,Deepak Kumar,Ashwin Tulapurkar,C. V. Tomy###
(318013, 318013)
Effect of B-site bismuth doping on magnetic and transport properties of La0.5Ca0.5Mn1-xBixO3 thin films.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 0, ',', 2],[144.0, 0.02, 'and', 2],[222.0, 98, '%', 4],[241.0, 42, '%', 4],[260.0, 50, 'K', 4]

La0.5Ca0.5Mn1-x
###Effect of B-site bismuth doping on magnetic and transport properties of La0.5Ca0.5Mn1-xBixO3 thin films|Himanshu Sharma,Deepak Kumar,Ashwin Tulapurkar,C. V. Tomy###
(318033, 318040)
Effect of B-site bismuth doping on magnetic and transport properties of La0.5Ca0.5Mn1-xBixO3 thin films.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[115.0, 0, ',', 2],[117.0, 0.02, 'and', 2],[195.0, 98, '%', 4],[214.0, 42, '%', 4],[233.0, 50, 'K', 4]

O3
###Effect of B-site bismuth doping on magnetic and transport properties of La0.5Ca0.5Mn1-xBixO3 thin films|Himanshu Sharma,Deepak Kumar,Ashwin Tulapurkar,C. V. Tomy###
(318042, 318043)
Effect of B-site bismuth doping on magnetic and transport properties of La0.5Ca0.5Mn1-xBixO3 thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 0, ',', 2],[114.0, 0.02, 'and', 2],[192.0, 98, '%', 4],[211.0, 42, '%', 4],[230.0, 50, 'K', 4]

B
###Effect of B-site bismuth doping on magnetic and transport properties of La0.5Ca0.5Mn1-xBixO3 thin films|Himanshu Sharma,Deepak Kumar,Ashwin Tulapurkar,C. V. Tomy###
(318102, 318102)
 Here, we report the effect ofB-site bismuth doping on the magnetic and transport properties inLa0.5Ca0.5Mn1-xBixO3 (LCMBO) thin films (for x<missing VAR>  0, 0.02 and 0.05) forhigh-efficiency spintronics devices.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 0, ',', 0],[55.0, 0.02, 'and', 0],[133.0, 98, '%', 2],[152.0, 42, '%', 2],[171.0, 50, 'K', 2]

La0.5Ca0.5Mn1-x
###Effect of B-site bismuth doping on magnetic and transport properties of La0.5Ca0.5Mn1-xBixO3 thin films|Himanshu Sharma,Deepak Kumar,Ashwin Tulapurkar,C. V. Tomy###
(318125, 318132)
 Here, we report the effect ofB-site bismuth doping on the magnetic and transport properties inLa0.5Ca0.5Mn1-xBixO3 (LCMBO) thin films (for x<missing VAR>  0, 0.02 and 0.05) forhigh-efficiency spintronics devices.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[23.0, 0, ',', 0],[25.0, 0.02, 'and', 0],[103.0, 98, '%', 2],[122.0, 42, '%', 2],[141.0, 50, 'K', 2]

O3
###Effect of B-site bismuth doping on magnetic and transport properties of La0.5Ca0.5Mn1-xBixO3 thin films|Himanshu Sharma,Deepak Kumar,Ashwin Tulapurkar,C. V. Tomy###
(318134, 318135)
 Here, we report the effect ofB-site bismuth doping on the magnetic and transport properties inLa0.5Ca0.5Mn1-xBixO3 (LCMBO) thin films (for x<missing VAR>  0, 0.02 and 0.05) forhigh-efficiency spintronics devices.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 0, ',', 0],[22.0, 0.02, 'and', 0],[100.0, 98, '%', 2],[119.0, 42, '%', 2],[138.0, 50, 'K', 2]

O
###Effect of B-site bismuth doping on magnetic and transport properties of La0.5Ca0.5Mn1-xBixO3 thin films|Himanshu Sharma,Deepak Kumar,Ashwin Tulapurkar,C. V. Tomy###
(318142, 318142)
 Here, we report the effect ofB-site bismuth doping on the magnetic and transport properties inLa0.5Ca0.5Mn1-xBixO3 (LCMBO) thin films (for x<missing VAR>  0, 0.02 and 0.05) forhigh-efficiency spintronics devices.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 0, ',', 0],[15.0, 0.02, 'and', 0],[93.0, 98, '%', 2],[112.0, 42, '%', 2],[131.0, 50, 'K', 2]

BO
###Effect of B-site bismuth doping on magnetic and transport properties of La0.5Ca0.5Mn1-xBixO3 thin films|Himanshu Sharma,Deepak Kumar,Ashwin Tulapurkar,C. V. Tomy###
(318185, 318186)
 For thin film of LCMBO (with x<missing VAR>  0.02), asignificant increase in the magnetization and ferromagnetic orderingtemperature (T<missing VAR>C) are observed.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 0, ',', 1],[28.0, 0.02, 'and', 1],[49.0, 98, '%', 1],[68.0, 42, '%', 1],[87.0, 50, 'K', 1]

C
###Effect of B-site bismuth doping on magnetic and transport properties of La0.5Ca0.5Mn1-xBixO3 thin films|Himanshu Sharma,Deepak Kumar,Ashwin Tulapurkar,C. V. Tomy###
(318222, 318222)
 For thin film of LCMBO (with x<missing VAR>  0.02), asignificant increase in the magnetization and ferromagnetic orderingtemperature (T<missing VAR>C) are observed.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 0, ',', 1],[65.0, 0.02, 'and', 1],[13.0, 98, '%', 1],[32.0, 42, '%', 1],[51.0, 50, 'K', 1]

BO
###Effect of B-site bismuth doping on magnetic and transport properties of La0.5Ca0.5Mn1-xBixO3 thin films|Himanshu Sharma,Deepak Kumar,Ashwin Tulapurkar,C. V. Tomy###
(318285, 318286)
 Also, about 98% magnetoresistance (MR) andunusually large ( 42%) anisotropic magnetoresistance (AMR) is observed at 50 Kin the same LCMBO (for x<missing VAR>  0.02) thin film.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 0, ',', 2],[128.0, 0.02, 'and', 2],[50.0, 98, '%', 0],[31.0, 42, '%', 0],[12.0, 50, 'K', 0]

C
###Effect of B-site bismuth doping on magnetic and transport properties of La0.5Ca0.5Mn1-xBixO3 thin films|Himanshu Sharma,Deepak Kumar,Ashwin Tulapurkar,C. V. Tomy###
(318311, 318311)
 This observed improvement in T<missing VAR>C, MRand AMR in LCMBO (with x<missing VAR>  0.02) thin film may be attributed to the modulationof the trapped electrons through JT-distortions due to the replacement of Mn3ions by larger Bi3 ions.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 0, ',', 3],[154.0, 0.02, 'and', 3],[76.0, 98, '%', 1],[57.0, 42, '%', 1],[38.0, 50, 'K', 1]

BO
###Effect of B-site bismuth doping on magnetic and transport properties of La0.5Ca0.5Mn1-xBixO3 thin films|Himanshu Sharma,Deepak Kumar,Ashwin Tulapurkar,C. V. Tomy###
(318329, 318330)
 This observed improvement in T<missing VAR>C, MRand AMR in LCMBO (with x<missing VAR>  0.02) thin film may be attributed to the modulationof the trapped electrons through JT-distortions due to the replacement of Mn3ions by larger Bi3 ions.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[174.0, 0, ',', 3],[172.0, 0.02, 'and', 3],[94.0, 98, '%', 1],[75.0, 42, '%', 1],[56.0, 50, 'K', 1]

Mn3
###Effect of B-site bismuth doping on magnetic and transport properties of La0.5Ca0.5Mn1-xBixO3 thin films|Himanshu Sharma,Deepak Kumar,Ashwin Tulapurkar,C. V. Tomy###
(318383, 318384)
 This observed improvement in T<missing VAR>C, MRand AMR in LCMBO (with x<missing VAR>  0.02) thin film may be attributed to the modulationof the trapped electrons through JT-distortions due to the replacement of Mn3ions by larger Bi3 ions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[228.0, 0, ',', 3],[226.0, 0.02, 'and', 3],[148.0, 98, '%', 1],[129.0, 42, '%', 1],[110.0, 50, 'K', 1]

Bi3
###Effect of B-site bismuth doping on magnetic and transport properties of La0.5Ca0.5Mn1-xBixO3 thin films|Himanshu Sharma,Deepak Kumar,Ashwin Tulapurkar,C. V. Tomy###
(318393, 318394)
 This observed improvement in T<missing VAR>C, MRand AMR in LCMBO (with x<missing VAR>  0.02) thin film may be attributed to the modulationof the trapped electrons through JT-distortions due to the replacement of Mn3ions by larger Bi3 ions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[238.0, 0, ',', 3],[236.0, 0.02, 'and', 3],[158.0, 98, '%', 1],[139.0, 42, '%', 1],[120.0, 50, 'K', 1]

B
###Effect of B-site bismuth doping on magnetic and transport properties of La0.5Ca0.5Mn1-xBixO3 thin films|Himanshu Sharma,Deepak Kumar,Ashwin Tulapurkar,C. V. Tomy###
(318425, 318425)
 With further increase in bismuth doping (for x<missing VAR> 0.05) at the B-site, a significant decrease in magnetization and T<missing VAR>C have beenobserved.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[270.0, 0, ',', 4],[268.0, 0.02, 'and', 4],[190.0, 98, '%', 2],[171.0, 42, '%', 2],[152.0, 50, 'K', 2]

C
###Effect of B-site bismuth doping on magnetic and transport properties of La0.5Ca0.5Mn1-xBixO3 thin films|Himanshu Sharma,Deepak Kumar,Ashwin Tulapurkar,C. V. Tomy###
(318443, 318443)
 With further increase in bismuth doping (for x<missing VAR> 0.05) at the B-site, a significant decrease in magnetization and T<missing VAR>C have beenobserved.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[288.0, 0, ',', 4],[286.0, 0.02, 'and', 4],[208.0, 98, '%', 2],[189.0, 42, '%', 2],[170.0, 50, 'K', 2]

O
###Magnetic oscillations of in-plane conductivity in quasi-two-dimensional metals|T. I. Mogilyuk,P. D. Grigoriev###
(318582, 318582)
 The analytical expressions for the amplitudes and phases ofmagnetic quantum oscillations (MQO) and of the so-called slow oscillations(SlO) are derived and applied to analyze their behavior as a function ofseveral parameters magnetic field strength, interlayer transfer integral andthe Landau-level width.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Magnetic oscillations of in-plane conductivity in quasi-two-dimensional metals|T. I. Mogilyuk,P. D. Grigoriev###
(318602, 318602)
 The analytical expressions for the amplitudes and phases ofmagnetic quantum oscillations (MQO) and of the so-called slow oscillations(SlO) are derived and applied to analyze their behavior as a function ofseveral parameters magnetic field strength, interlayer transfer integral andthe Landau-level width.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Magnetic oscillations of in-plane conductivity in quasi-two-dimensional metals|T. I. Mogilyuk,P. D. Grigoriev###
(318665, 318665)
 Both the MQO and SlO of intralayer and interlayerconductivities have approximately opposite phase in weak magnetic field and thesame phase in strong field.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Magnetic oscillations of in-plane conductivity in quasi-two-dimensional metals|T. I. Mogilyuk,P. D. Grigoriev###
(318670, 318670)
 Both the MQO and SlO of intralayer and interlayerconductivities have approximately opposite phase in weak magnetic field and thesame phase in strong field.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Magnetic oscillations of in-plane conductivity in quasi-two-dimensional metals|T. I. Mogilyuk,P. D. Grigoriev###
(318722, 318722)
 The amplitude of SlO of intralayer conductivitychanges sign at omegac<missing VAR>tau0sqrt3.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TbPtBi
###Magnetotransport properties and giant anomalous Hall angle in half-Heusler compound TbPtBi|Ratnadwip Singha,Shubhankar Roy,Arnab Pariari,Biswarup Satpati,Prabhat Mandal###
(318853, 318855)
Magnetotransport properties and giant anomalous Hall angle in half-Heusler compound TbPtBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PtBi
###Magnetotransport properties and giant anomalous Hall angle in half-Heusler compound TbPtBi|Ratnadwip Singha,Shubhankar Roy,Arnab Pariari,Biswarup Satpati,Prabhat Mandal###
(318868, 318869)
 Magnetic lanthanide half-Heuslers (R<missing VAR>PtBi; R<missing VAR> being the lanthanide)represent an attractive subgroup of the Heusler family and have been identifiedas ideal candidates for time reversal symmetry breaking topological Weylsemimetals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magnetotransport properties and giant anomalous Hall angle in half-Heusler compound TbPtBi|Ratnadwip Singha,Shubhankar Roy,Arnab Pariari,Biswarup Satpati,Prabhat Mandal###
(318931, 318931)
 In this paper, we present the detailed analysis of themagnetotransport properties of frustrated antiferromagnet TbPtBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TbPtBi
###Magnetotransport properties and giant anomalous Hall angle in half-Heusler compound TbPtBi|Ratnadwip Singha,Shubhankar Roy,Arnab Pariari,Biswarup Satpati,Prabhat Mandal###
(318963, 318965)
 In this paper, we present the detailed analysis of themagnetotransport properties of frustrated antiferromagnet TbPtBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TbPtBi
###Magnetotransport properties and giant anomalous Hall angle in half-Heusler compound TbPtBi|Ratnadwip Singha,Shubhankar Roy,Arnab Pariari,Biswarup Satpati,Prabhat Mandal###
(319008, 319010)
 The MR of TbPtBi is significantly anisotropic with respect to themagnetic field, applied along different crystallographic directions andindicates the anisotropic nature of the Fermi surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Magnetotransport properties and giant anomalous Hall angle in half-Heusler compound TbPtBi|Ratnadwip Singha,Shubhankar Roy,Arnab Pariari,Biswarup Satpati,Prabhat Mandal###
(319091, 319091)
 At low temperature, Berry phase driven large anomalous Hallconductivity has been observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe3Sn2
###Magnetic-field control of topological electronic response near room temperature in correlated Kagome magnets|Yangmu Li,Qi Wang,Lisa DeBeer-Schmitt,Zurab Guguchia,Ryan D. Desautels,Jiaxin Yin,Qianheng Du,Weijun Ren,Xinguo Zhao,Zhidong Zhang,Igor A. Zaliznyak,Cedomir Petrovic,Weiguo Yin,M. Zahid Hasan,Hechang Lei,John M. Tranquada###
(319278, 319281)
 Here we report tunable localmagnetism and its intriguing control of topological electronic response nearroom temperature in the Kagome magnet Fe3Sn2 using small angle neutronscattering, muon spin rotation, and magnetoresistivity measurement techniques.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Image of dynamic local exchange interactions in the dc magnetoresistance of spin-polarized current through a dopant|Stephen R. McMillan,Nicholas J. Harmon,Michael E. Flatté###
(319601, 319601)
 At theseresonances spin precession in the applied magnetic field is canceled by spinevolution in the exchange field, preserving a dynamic bottleneck for spintransport through the dopant.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuTe2
###Large negative magnetoresistance in the new antiferromagnetic rare-earth dichalcogenide EuTe$_2$|Junjie Yin,Changwei Wu,Lisi Li,Jia Yu,Hualei Sun,Bing Shen,Benjamin A. Frandsen,Dao-Xin Yao,Meng Wang###
(319827, 319829)
Large negative magnetoresistance in the new antiferromagnetic rare-earth dichalcogenide EuTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 11, 'K', 2],[130.0, 100, '%', 4]

EuTe2
###Large negative magnetoresistance in the new antiferromagnetic rare-earth dichalcogenide EuTe$_2$|Junjie Yin,Changwei Wu,Lisi Li,Jia Yu,Hualei Sun,Bing Shen,Benjamin A. Frandsen,Dao-Xin Yao,Meng Wang###
(319855, 319857)
 We report the synthesis and characterization of a rare-earth dichalcogenideEuTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 11, 'K', 1],[102.0, 100, '%', 3]

Te
###Large negative magnetoresistance in the new antiferromagnetic rare-earth dichalcogenide EuTe$_2$|Junjie Yin,Changwei Wu,Lisi Li,Jia Yu,Hualei Sun,Bing Shen,Benjamin A. Frandsen,Dao-Xin Yao,Meng Wang###
(320026, 320026)
 Furthermore, density functional theory calculationsdemonstrate that the electrons near the Fermi surface mainly originate from theTe 5p<missing VAR> orbitals and the magnetism is dominated by localized electrons from theEu 4f<missing VAR> orbitals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 11, 'K', 4],[67.0, 100, '%', 2]

Eu
###Large negative magnetoresistance in the new antiferromagnetic rare-earth dichalcogenide EuTe$_2$|Junjie Yin,Changwei Wu,Lisi Li,Jia Yu,Hualei Sun,Bing Shen,Benjamin A. Frandsen,Dao-Xin Yao,Meng Wang###
(320054, 320054)
 Furthermore, density functional theory calculationsdemonstrate that the electrons near the Fermi surface mainly originate from theTe 5p<missing VAR> orbitals and the magnetism is dominated by localized electrons from theEu 4f<missing VAR> orbitals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 11, 'K', 4],[95.0, 100, '%', 2]

KKY
###Large negative magnetoresistance in the new antiferromagnetic rare-earth dichalcogenide EuTe$_2$|Junjie Yin,Changwei Wu,Lisi Li,Jia Yu,Hualei Sun,Bing Shen,Benjamin A. Frandsen,Dao-Xin Yao,Meng Wang###
(320075, 320077)
 These results suggest that both the R<missing VAR>KKY and Kondointeractions between the local moments and itinerant electrons play crucialroles in the magnetism and large negative magnetoresistance of EuTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[200.0, 11, 'K', 5],[116.0, 100, '%', 3]

EuTe2
###Large negative magnetoresistance in the new antiferromagnetic rare-earth dichalcogenide EuTe$_2$|Junjie Yin,Changwei Wu,Lisi Li,Jia Yu,Hualei Sun,Bing Shen,Benjamin A. Frandsen,Dao-Xin Yao,Meng Wang###
(320123, 320125)
 These results suggest that both the R<missing VAR>KKY and Kondointeractions between the local moments and itinerant electrons play crucialroles in the magnetism and large negative magnetoresistance of EuTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[248.0, 11, 'K', 5],[164.0, 100, '%', 3]

CuMnAs
###Quenching of an antiferromagnet into high resistivity states using electrical or ultrashort optical pulses|Zdeněk Kašpar,Miloslav Surýnek,Jan Zubáč,Filip Krizek,Vít Novák,Richard P. Campion,Martin S. Wörnle,Pietro Gambardella,Xavier Marti,Petr Němec,K. W. Edmonds,S. Reimers,O. J. Amin,F. Maccherozzi,S. S. Dhesi,Peter Wadley,Jörg Wunderlich,Kamil Olejník,Tomáš Jungwirth###
(320359, 320361)
 Here we reportreversible and reproducible quenching of an antiferromagnetic CuMnAs film byeither electrical or ultrashort optical pulses into nano-fragmented domainstates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 20, '%', 1]

Cu
###Experimental evidence of spin-orbit torque from metallic interfaces|A. Anadón,R. Guerrero,J. A. Jover-Galtier,A. Gudín,J. M. Díez,P. Olleros-Rodríguez,R. Miranda,J. Camarero,P. Perna###
(320649, 320649)
 Electrical transportmeasurements reveal a six-fold increase of the spin-orbit torque accompanied bya drastic reduction of the spin Hall magnetoresistance upon the introduction ofa Cu interlayer in a Pt/Cu/Co/Pt structure with perpendicular magneticanisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt/Cu/Co/Pt
###Experimental evidence of spin-orbit torque from metallic interfaces|A. Anadón,R. Guerrero,J. A. Jover-Galtier,A. Gudín,J. M. Díez,P. Olleros-Rodríguez,R. Miranda,J. Camarero,P. Perna###
(320657, 320663)
 Electrical transportmeasurements reveal a six-fold increase of the spin-orbit torque accompanied bya drastic reduction of the spin Hall magnetoresistance upon the introduction ofa Cu interlayer in a Pt/Cu/Co/Pt structure with perpendicular magneticanisotropy.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

(Fe3O4)
###Field-dependent anisotropic magnetoresistance and planar Hall effect in epitaxial magnetite thin films|N. Naftalis,A. Kaplan,M. Schultz,C. A. F. Vaz,J. A. Moyer,C. H. Ahn,L. Klein###
(320938, 320943)
 A systematic study of the temperature and magnetic field dependence of thelongitudinal and transverse resistivities of epitaxial thin films of magnetite(Fe3O4) is reported.
Featurization successful!
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 9, 'T', 2]

PH
###Field-dependent anisotropic magnetoresistance and planar Hall effect in epitaxial magnetite thin films|N. Naftalis,A. Kaplan,M. Schultz,C. A. F. Vaz,J. A. Moyer,C. H. Ahn,L. Klein###
(320974, 320975)
 The anisotropic magnetoresistance (AMR) and the planarHall effect (PHE) are sensitive to the in-plane orientation of current andmagnetization with respect to crystal axes in a way consistent with the cubicsymmetry of the system.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 9, 'T', 1]

WCN
###Magnetic order and superconductivity observed in bundles of Double-Wall Carbon Nanotubes|J. Barzola-Quiquia,P. Esquinazi,M. Lindel,D. Spemann,M. Muallem,G. D. Nessim###
(321221, 321223)
 The magnetotransport properties were studied in hundreds of micrometer lengthdouble-wall carbon nanotubes (D<missing VAR>WCNT) bundles.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 15, 'K', 1],[120.0, 2, 'K', 3],[123.0, 15, 'K', 3]

At
###Magnetic order and superconductivity observed in bundles of Double-Wall Carbon Nanotubes|J. Barzola-Quiquia,P. Esquinazi,M. Lindel,D. Spemann,M. Muallem,G. D. Nessim###
(321337, 321337)
 Attemperatures between 2 K and 15 K the resistance is non-ohmic and thecurrent-voltage characteristics reveal the appearance of a potential, which canbe well described by a fluctuation-induced tunneling conduction model.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 15, 'K', 2],[6.0, 2, 'K', 0],[9.0, 15, 'K', 0]

In
###Magnetic order and superconductivity observed in bundles of Double-Wall Carbon Nanotubes|J. Barzola-Quiquia,P. Esquinazi,M. Lindel,D. Spemann,M. Muallem,G. D. Nessim###
(321408, 321408)
 In thislow temperature range and at low enough input current, a positivemagnetoresistance appears - in addition to the negative one - with anextraordinary hysteresis in field and vanishes at T<missing VAR> sim 15 K, suggesting theexistence of a superconducting state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[177.0, 15, 'K', 3],[65.0, 2, 'K', 1],[62.0, 15, 'K', 1]

K
###Magnetic order and superconductivity observed in bundles of Double-Wall Carbon Nanotubes|J. Barzola-Quiquia,P. Esquinazi,M. Lindel,D. Spemann,M. Muallem,G. D. Nessim###
(321482, 321482)
 In thislow temperature range and at low enough input current, a positivemagnetoresistance appears - in addition to the negative one - with anextraordinary hysteresis in field and vanishes at T<missing VAR> sim 15 K, suggesting theexistence of a superconducting state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[251.0, 15, 'K', 3],[139.0, 2, 'K', 1],[136.0, 15, 'K', 1]

WCN
###Magnetic order and superconductivity observed in bundles of Double-Wall Carbon Nanotubes|J. Barzola-Quiquia,P. Esquinazi,M. Lindel,D. Spemann,M. Muallem,G. D. Nessim###
(321525, 321527)
 Magnetization results partially supportthe existence of both phenomena in the D<missing VAR>WCNT<missing VAR> bundles.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[294.0, 15, 'K', 4],[182.0, 2, 'K', 2],[179.0, 15, 'K', 2]

Ga[Al]As
###Commensurability resonances in two-dimensional magneto-electric lateral superlattices|J. Schluck,S. Fasbender,T. Heinzel,K. Pierz,H. W. Schumacher,D. Kazazis,U. Gennser###
(321603, 321607)
 Hybrid lateral superlattices composed of a square array of antidots and aperiodic one-dimensional magnetic modulation are prepared inmathrmGa[Al]As heterostructures.
EXCEPTION 1: Square brackets detected! Chemical formula was modified to: Ga(Al)As
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Superconductor-insulator transitions: Phase diagram and magnetoresistance|I. S. Burmistrov,I. V. Gornyi,A. D. Mirlin###
(322068, 322068)
 In the cases of short-range interaction, weidentify parameter regions where the superconductivity is enhanced bylocalization effects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 4, 'e', 1]

H
###Nature of magnetotransport in metal/insulating-ferromagnet heterostructures: Spin Hall magnetoresistance or magnetic proximity effect|Xiang Zhou,Li Ma,Zhong Shi,Wei-Jia Fan,Jian-Guo Zheng,R. F. L. Evans,Shi-Ming Zhou###
(322270, 322270)
 We study the anomalous Hall-like effect (AHLE) and the effective anisotropicmagnetoresistance (EAMR) in antiferromagnetic gamma -IrMn3/Y3Fe5O12(YIG) andPt/YIG<missing VAR> heterostructures.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

IrMn3/Y3
###Nature of magnetotransport in metal/insulating-ferromagnet heterostructures: Spin Hall magnetoresistance or magnetic proximity effect|Xiang Zhou,Li Ma,Zhong Shi,Wei-Jia Fan,Jian-Guo Zheng,R. F. L. Evans,Shi-Ming Zhou###
(322300, 322305)
 We study the anomalous Hall-like effect (AHLE) and the effective anisotropicmagnetoresistance (EAMR) in antiferromagnetic gamma -IrMn3/Y3Fe5O12(YIG) andPt/YIG<missing VAR> heterostructures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

O12
###Nature of magnetotransport in metal/insulating-ferromagnet heterostructures: Spin Hall magnetoresistance or magnetic proximity effect|Xiang Zhou,Li Ma,Zhong Shi,Wei-Jia Fan,Jian-Guo Zheng,R. F. L. Evans,Shi-Ming Zhou###
(322308, 322309)
 We study the anomalous Hall-like effect (AHLE) and the effective anisotropicmagnetoresistance (EAMR) in antiferromagnetic gamma -IrMn3/Y3Fe5O12(YIG) andPt/YIG<missing VAR> heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YI
###Nature of magnetotransport in metal/insulating-ferromagnet heterostructures: Spin Hall magnetoresistance or magnetic proximity effect|Xiang Zhou,Li Ma,Zhong Shi,Wei-Jia Fan,Jian-Guo Zheng,R. F. L. Evans,Shi-Ming Zhou###
(322311, 322312)
 We study the anomalous Hall-like effect (AHLE) and the effective anisotropicmagnetoresistance (EAMR) in antiferromagnetic gamma -IrMn3/Y3Fe5O12(YIG) andPt/YIG<missing VAR> heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt/YI
###Nature of magnetotransport in metal/insulating-ferromagnet heterostructures: Spin Hall magnetoresistance or magnetic proximity effect|Xiang Zhou,Li Ma,Zhong Shi,Wei-Jia Fan,Jian-Guo Zheng,R. F. L. Evans,Shi-Ming Zhou###
(322319, 322322)
 We study the anomalous Hall-like effect (AHLE) and the effective anisotropicmagnetoresistance (EAMR) in antiferromagnetic gamma -IrMn3/Y3Fe5O12(YIG) andPt/YIG<missing VAR> heterostructures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

IrMn3/YI
###Nature of magnetotransport in metal/insulating-ferromagnet heterostructures: Spin Hall magnetoresistance or magnetic proximity effect|Xiang Zhou,Li Ma,Zhong Shi,Wei-Jia Fan,Jian-Guo Zheng,R. F. L. Evans,Shi-Ming Zhou###
(322333, 322338)
 For gamma -IrMn3/YIG<missing VAR>, the EAMR and the AHLEresistivity change sign with temperature due to the competition between thespin Hall magnetoresistance (SMR) and the magnetic proximity effect (MPE)induced by the interfacial antiferromagnetic uncompensated magnetic moment.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

H
###Nature of magnetotransport in metal/insulating-ferromagnet heterostructures: Spin Hall magnetoresistance or magnetic proximity effect|Xiang Zhou,Li Ma,Zhong Shi,Wei-Jia Fan,Jian-Guo Zheng,R. F. L. Evans,Shi-Ming Zhou###
(322354, 322354)
 For gamma -IrMn3/YIG<missing VAR>, the EAMR and the AHLEresistivity change sign with temperature due to the competition between thespin Hall magnetoresistance (SMR) and the magnetic proximity effect (MPE)induced by the interfacial antiferromagnetic uncompensated magnetic moment.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Nature of magnetotransport in metal/insulating-ferromagnet heterostructures: Spin Hall magnetoresistance or magnetic proximity effect|Xiang Zhou,Li Ma,Zhong Shi,Wei-Jia Fan,Jian-Guo Zheng,R. F. L. Evans,Shi-Ming Zhou###
(322389, 322389)
 For gamma -IrMn3/YIG<missing VAR>, the EAMR and the AHLEresistivity change sign with temperature due to the competition between thespin Hall magnetoresistance (SMR) and the magnetic proximity effect (MPE)induced by the interfacial antiferromagnetic uncompensated magnetic moment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Nature of magnetotransport in metal/insulating-ferromagnet heterostructures: Spin Hall magnetoresistance or magnetic proximity effect|Xiang Zhou,Li Ma,Zhong Shi,Wei-Jia Fan,Jian-Guo Zheng,R. F. L. Evans,Shi-Ming Zhou###
(322428, 322428)
 Incontrast, for Pt/YIG<missing VAR> the AHLE resistivity changes sign with temperature whereasno sign change is observed in the EAMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt/YI
###Nature of magnetotransport in metal/insulating-ferromagnet heterostructures: Spin Hall magnetoresistance or magnetic proximity effect|Xiang Zhou,Li Ma,Zhong Shi,Wei-Jia Fan,Jian-Guo Zheng,R. F. L. Evans,Shi-Ming Zhou###
(322436, 322439)
 Incontrast, for Pt/YIG<missing VAR> the AHLE resistivity changes sign with temperature whereasno sign change is observed in the EAMR.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

H
###Nature of magnetotransport in metal/insulating-ferromagnet heterostructures: Spin Hall magnetoresistance or magnetic proximity effect|Xiang Zhou,Li Ma,Zhong Shi,Wei-Jia Fan,Jian-Guo Zheng,R. F. L. Evans,Shi-Ming Zhou###
(322445, 322445)
 Incontrast, for Pt/YIG<missing VAR> the AHLE resistivity changes sign with temperature whereasno sign change is observed in the EAMR.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Nature of magnetotransport in metal/insulating-ferromagnet heterostructures: Spin Hall magnetoresistance or magnetic proximity effect|Xiang Zhou,Li Ma,Zhong Shi,Wei-Jia Fan,Jian-Guo Zheng,R. F. L. Evans,Shi-Ming Zhou###
(322498, 322498)
 This is because the MPE and the SMRplay a dominant role in the AHLE and the EAMR, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Nature of magnetotransport in metal/insulating-ferromagnet heterostructures: Spin Hall magnetoresistance or magnetic proximity effect|Xiang Zhou,Li Ma,Zhong Shi,Wei-Jia Fan,Jian-Guo Zheng,R. F. L. Evans,Shi-Ming Zhou###
(322516, 322516)
 This is because the MPE and the SMRplay a dominant role in the AHLE and the EAMR, respectively.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Nature of magnetotransport in metal/insulating-ferromagnet heterostructures: Spin Hall magnetoresistance or magnetic proximity effect|Xiang Zhou,Li Ma,Zhong Shi,Wei-Jia Fan,Jian-Guo Zheng,R. F. L. Evans,Shi-Ming Zhou###
(322533, 322533)
 As new types ofgalvanomagnetic property, the AHLE and the EAMR have proved vital indisentangling the MPE and the SMR in metal/insulating-ferromagnetheterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Nature of magnetotransport in metal/insulating-ferromagnet heterostructures: Spin Hall magnetoresistance or magnetic proximity effect|Xiang Zhou,Li Ma,Zhong Shi,Wei-Jia Fan,Jian-Guo Zheng,R. F. L. Evans,Shi-Ming Zhou###
(322550, 322550)
 As new types ofgalvanomagnetic property, the AHLE and the EAMR have proved vital indisentangling the MPE and the SMR in metal/insulating-ferromagnetheterostructures.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Nature of magnetotransport in metal/insulating-ferromagnet heterostructures: Spin Hall magnetoresistance or magnetic proximity effect|Xiang Zhou,Li Ma,Zhong Shi,Wei-Jia Fan,Jian-Guo Zheng,R. F. L. Evans,Shi-Ming Zhou###
(322584, 322584)
 As new types ofgalvanomagnetic property, the AHLE and the EAMR have proved vital indisentangling the MPE and the SMR in metal/insulating-ferromagnetheterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Negative magnetoresistance in viscous flow of two-dimensional electrons|P. S. Alekseev###
(322627, 322627)
 At low temperatures, in very clean two-dimensional (2D) samples the electronmean free path for collisions with static defects and phonons becomes greaterthan the sample width.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 2, 'D', 2],[184.0, 2, 'D', 4],[291.0, 2, 'D', 7]

GaAs
###Negative magnetoresistance in viscous flow of two-dimensional electrons|P. S. Alekseev###
(322905, 322906)
Our analysis demonstrates that the viscous mechanism is responsible for thegiant negative magnetoresistance recently observed in the ultra-high-mobilityGaAs quantum wells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 2, 'D', 4],[94.0, 2, 'D', 2],[12.0, 2, 'D', 1]

Ca0.8La0.2Fe0.98Co0.02As2
###Anisotropic Ginzburg-Landau scaling of Hc2 and transport properties of 112-type Ca0.8La0.2Fe0.98Co0.02As2 single crystal|Xiangzhuo Xing,Wei Zhou,Nan Zhou,Feifei Yuan,Yongqiang Pan,Haijun Zhao,Xiaofeng Xu,Zhixiang Shi###
(322985, 322994)
Anisotropic Ginzburg-Landau scaling of Hc2 and transport properties of 112-type Ca0.8La0.2Fe0.98Co0.02As2 single crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.245,0.005,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.05,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 5, 'K', 2],[238.0, 175, 'K', 5],[272.0, 175, 'K', 6]

Ca0.8La0.2Fe0.98Co0.02As2
###Anisotropic Ginzburg-Landau scaling of Hc2 and transport properties of 112-type Ca0.8La0.2Fe0.98Co0.02As2 single crystal|Xiangzhuo Xing,Wei Zhou,Nan Zhou,Feifei Yuan,Yongqiang Pan,Haijun Zhao,Xiaofeng Xu,Zhixiang Shi###
(323011, 323020)
 High-quality single crystal of Ca0.8La0.2Fe0.98Co0.02As2 has beensuccessfully synthesized using a self-flux method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.245,0.005,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.05,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 5, 'K', 1],[212.0, 175, 'K', 4],[246.0, 175, 'K', 5]

In
###Anisotropic Ginzburg-Landau scaling of Hc2 and transport properties of 112-type Ca0.8La0.2Fe0.98Co0.02As2 single crystal|Xiangzhuo Xing,Wei Zhou,Nan Zhou,Feifei Yuan,Yongqiang Pan,Haijun Zhao,Xiaofeng Xu,Zhixiang Shi###
(323195, 323195)
In the normal state, the negative Hall coefficient shows strong butnonmonotonic T<missing VAR>-dependence through a minimum at 175 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 5, 'K', 3],[37.0, 175, 'K', 0],[71.0, 175, 'K', 1]

CoFe
###Electrical Writing of Magnetic and Resistive Multistates in CoFe Films Deposited onto Pb[Zr$_x$Ti$_{1-x}$]O$_3$|V. Iurchuk,B. Doudin,J. Bran,B. Kundys###
(323350, 323351)
Electrical Writing of Magnetic and Resistive Multistates in CoFe Films Deposited onto Pb[Zrx<missing VAR>Ti1-x]O3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[268.0, 100, 'nm', 5]

Pb
###Electrical Writing of Magnetic and Resistive Multistates in CoFe Films Deposited onto Pb[Zr$_x$Ti$_{1-x}$]O$_3$|V. Iurchuk,B. Doudin,J. Bran,B. Kundys###
(323359, 323359)
Electrical Writing of Magnetic and Resistive Multistates in CoFe Films Deposited onto Pb[Zrx<missing VAR>Ti1-x]O3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[260.0, 100, 'nm', 5]

Zr
###Electrical Writing of Magnetic and Resistive Multistates in CoFe Films Deposited onto Pb[Zr$_x$Ti$_{1-x}$]O$_3$|V. Iurchuk,B. Doudin,J. Bran,B. Kundys###
(323361, 323361)
Electrical Writing of Magnetic and Resistive Multistates in CoFe Films Deposited onto Pb[Zrx<missing VAR>Ti1-x]O3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[258.0, 100, 'nm', 5]

O3
###Electrical Writing of Magnetic and Resistive Multistates in CoFe Films Deposited onto Pb[Zr$_x$Ti$_{1-x}$]O$_3$|V. Iurchuk,B. Doudin,J. Bran,B. Kundys###
(323368, 323369)
Electrical Writing of Magnetic and Resistive Multistates in CoFe Films Deposited onto Pb[Zrx<missing VAR>Ti1-x]O3.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[250.0, 100, 'nm', 5]

In
###Electrical Writing of Magnetic and Resistive Multistates in CoFe Films Deposited onto Pb[Zr$_x$Ti$_{1-x}$]O$_3$|V. Iurchuk,B. Doudin,J. Bran,B. Kundys###
(323404, 323404)
 In particular, an ability to writemagnetic state electrically would be highly beneficial.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[215.0, 100, 'nm', 3]

Pb
###Electrical Writing of Magnetic and Resistive Multistates in CoFe Films Deposited onto Pb[Zr$_x$Ti$_{1-x}$]O$_3$|V. Iurchuk,B. Doudin,J. Bran,B. Kundys###
(323496, 323496)
 We investigate thesystem of piezoelectric substrate Pb[Zrx<missing VAR>Ti1-x]O3 with CoFeoverlayers, extending the known reversible bistable electro-magnetic couplingto surface and multistate operations, adding the initial state resetpossibility.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 100, 'nm', 1]

Zr
###Electrical Writing of Magnetic and Resistive Multistates in CoFe Films Deposited onto Pb[Zr$_x$Ti$_{1-x}$]O$_3$|V. Iurchuk,B. Doudin,J. Bran,B. Kundys###
(323498, 323498)
 We investigate thesystem of piezoelectric substrate Pb[Zrx<missing VAR>Ti1-x]O3 with CoFeoverlayers, extending the known reversible bistable electro-magnetic couplingto surface and multistate operations, adding the initial state resetpossibility.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 100, 'nm', 1]

O3
###Electrical Writing of Magnetic and Resistive Multistates in CoFe Films Deposited onto Pb[Zr$_x$Ti$_{1-x}$]O$_3$|V. Iurchuk,B. Doudin,J. Bran,B. Kundys###
(323505, 323506)
 We investigate thesystem of piezoelectric substrate Pb[Zrx<missing VAR>Ti1-x]O3 with CoFeoverlayers, extending the known reversible bistable electro-magnetic couplingto surface and multistate operations, adding the initial state resetpossibility.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 100, 'nm', 1]

CoFe
###Electrical Writing of Magnetic and Resistive Multistates in CoFe Films Deposited onto Pb[Zr$_x$Ti$_{1-x}$]O$_3$|V. Iurchuk,B. Doudin,J. Bran,B. Kundys###
(323510, 323511)
 We investigate thesystem of piezoelectric substrate Pb[Zrx<missing VAR>Ti1-x]O3 with CoFeoverlayers, extending the known reversible bistable electro-magnetic couplingto surface and multistate operations, adding the initial state resetpossibility.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 100, 'nm', 1]

CoFe
###Electrical Writing of Magnetic and Resistive Multistates in CoFe Films Deposited onto Pb[Zr$_x$Ti$_{1-x}$]O$_3$|V. Iurchuk,B. Doudin,J. Bran,B. Kundys###
(323563, 323564)
 Increasing the CoFe thickness improves the magnetoresistivesensitivity, but at the expenses of decreasing the strain-mediated coupling,with optimum magnetic thin film thickness of the order of 100 nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 100, 'nm', 0]

PtBi2
###Extremely large magnetoresistance in a topological semimetal candidate pyrite PtBi2|Wenshuai Gao,Ningning Hao,Fa-Wei Zheng,Wei Ning,Min Wu,Xiangde Zhu,Guolin Zheng,Hongwei Zhang,Jinglei Zhang,Chuanying Xi,Jiyong Yang,Haifeng Du,Ping Zhang,Yuheng Zhang,Mingliang Tian###
(323720, 323722)
Extremely large magnetoresistance in a topological semimetal candidate pyrite PtBi2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 1.8, 'K', 3],[154.0, 33, 'T', 3]

PtBi2
###Extremely large magnetoresistance in a topological semimetal candidate pyrite PtBi2|Wenshuai Gao,Ningning Hao,Fa-Wei Zheng,Wei Ning,Min Wu,Xiangde Zhu,Guolin Zheng,Hongwei Zhang,Jinglei Zhang,Chuanying Xi,Jiyong Yang,Haifeng Du,Ping Zhang,Yuheng Zhang,Mingliang Tian###
(323731, 323733)
 While pyrite-type PtBi2 with face-centered cubic structure has been predictedto be a three-dimensional (3D) Dirac semimetal, experimental study on itsphysical properties remains absent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 1.8, 'K', 2],[143.0, 33, 'T', 2]

PtBi2
###Extremely large magnetoresistance in a topological semimetal candidate pyrite PtBi2|Wenshuai Gao,Ningning Hao,Fa-Wei Zheng,Wei Ning,Min Wu,Xiangde Zhu,Guolin Zheng,Hongwei Zhang,Jinglei Zhang,Chuanying Xi,Jiyong Yang,Haifeng Du,Ping Zhang,Yuheng Zhang,Mingliang Tian###
(323814, 323816)
 Here we report the angular-dependentmagnetoresistance (MR) measurements of PtBi2 single-crystal under high magneticfields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 1.8, 'K', 1],[60.0, 33, 'T', 1]

WTe2
###Extremely large magnetoresistance in a topological semimetal candidate pyrite PtBi2|Wenshuai Gao,Ningning Hao,Fa-Wei Zheng,Wei Ning,Min Wu,Xiangde Zhu,Guolin Zheng,Hongwei Zhang,Jinglei Zhang,Chuanying Xi,Jiyong Yang,Haifeng Du,Ping Zhang,Yuheng Zhang,Mingliang Tian###
(323899, 323901)
 We observed extreme large unsaturated magnetoresistance (XMR) up to11.2 million percent at T<missing VAR>  1.8 K in a magnetic field of 33 T, which surpassesthe previously reported Dirac materials, such as WTe2, LaSb and NbP.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 1.8, 'K', 0],[23.0, 33, 'T', 0]

LaSb
###Extremely large magnetoresistance in a topological semimetal candidate pyrite PtBi2|Wenshuai Gao,Ningning Hao,Fa-Wei Zheng,Wei Ning,Min Wu,Xiangde Zhu,Guolin Zheng,Hongwei Zhang,Jinglei Zhang,Chuanying Xi,Jiyong Yang,Haifeng Du,Ping Zhang,Yuheng Zhang,Mingliang Tian###
(323904, 323905)
 We observed extreme large unsaturated magnetoresistance (XMR) up to11.2 million percent at T<missing VAR>  1.8 K in a magnetic field of 33 T, which surpassesthe previously reported Dirac materials, such as WTe2, LaSb and NbP.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 1.8, 'K', 0],[28.0, 33, 'T', 0]

NbP
###Extremely large magnetoresistance in a topological semimetal candidate pyrite PtBi2|Wenshuai Gao,Ningning Hao,Fa-Wei Zheng,Wei Ning,Min Wu,Xiangde Zhu,Guolin Zheng,Hongwei Zhang,Jinglei Zhang,Chuanying Xi,Jiyong Yang,Haifeng Du,Ping Zhang,Yuheng Zhang,Mingliang Tian###
(323909, 323910)
 We observed extreme large unsaturated magnetoresistance (XMR) up to11.2 million percent at T<missing VAR>  1.8 K in a magnetic field of 33 T, which surpassesthe previously reported Dirac materials, such as WTe2, LaSb and NbP.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 1.8, 'K', 0],[33.0, 33, 'T', 0]

H
###Extremely large magnetoresistance in a topological semimetal candidate pyrite PtBi2|Wenshuai Gao,Ningning Hao,Fa-Wei Zheng,Wei Ning,Min Wu,Xiangde Zhu,Guolin Zheng,Hongwei Zhang,Jinglei Zhang,Chuanying Xi,Jiyong Yang,Haifeng Du,Ping Zhang,Yuheng Zhang,Mingliang Tian###
(323938, 323938)
 Thecrystals exhibit an ultrahigh mobility and significant Shubnikov-de Hass (SdH)quantum oscillations with nontrivial Berrys<missing VAR> phase.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 1.8, 'K', 1],[62.0, 33, 'T', 1]

PtBi2
###Extremely large magnetoresistance in a topological semimetal candidate pyrite PtBi2|Wenshuai Gao,Ningning Hao,Fa-Wei Zheng,Wei Ning,Min Wu,Xiangde Zhu,Guolin Zheng,Hongwei Zhang,Jinglei Zhang,Chuanying Xi,Jiyong Yang,Haifeng Du,Ping Zhang,Yuheng Zhang,Mingliang Tian###
(324022, 324024)
 Our experimental results associated with the ab initiocalculations suggest that pyrite PtBi2 is a topological semimetal candidatewhich might provide a platform for exploring topological materials with XMR innoble metal alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 1.8, 'K', 3],[146.0, 33, 'T', 3]

WTe2
###Temperature effect on lattice and electronic structures of WTe$_2$ from first-principles study|Gang Liu,Huimei Liu,Jian Zhou,Xiangang Wan###
(324095, 324097)
Temperature effect on lattice and electronic structures of WTe2 from first-principles study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(WTe2)
###Temperature effect on lattice and electronic structures of WTe$_2$ from first-principles study|Gang Liu,Huimei Liu,Jian Zhou,Xiangang Wan###
(324112, 324116)
 Tungsten ditelluride (WTe2) exhibits extremely large and unsaturatedmagnetoresistance (MR).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Te
###Temperature effect on lattice and electronic structures of WTe$_2$ from first-principles study|Gang Liu,Huimei Liu,Jian Zhou,Xiangang Wan###
(324151, 324151)
 Due to the large spatially extensions of Te-5p<missing VAR> and W-5d<missing VAR>orbitals, the electronic properties of WTe2 are sensitive to the latticestructures, which can probably affect the strongly temperature dependent MRfound in experiment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Temperature effect on lattice and electronic structures of WTe$_2$ from first-principles study|Gang Liu,Huimei Liu,Jian Zhou,Xiangang Wan###
(324158, 324158)
 Due to the large spatially extensions of Te-5p<missing VAR> and W-5d<missing VAR>orbitals, the electronic properties of WTe2 are sensitive to the latticestructures, which can probably affect the strongly temperature dependent MRfound in experiment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Temperature effect on lattice and electronic structures of WTe$_2$ from first-principles study|Gang Liu,Huimei Liu,Jian Zhou,Xiangang Wan###
(324175, 324177)
 Due to the large spatially extensions of Te-5p<missing VAR> and W-5d<missing VAR>orbitals, the electronic properties of WTe2 are sensitive to the latticestructures, which can probably affect the strongly temperature dependent MRfound in experiment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Temperature effect on lattice and electronic structures of WTe$_2$ from first-principles study|Gang Liu,Huimei Liu,Jian Zhou,Xiangang Wan###
(324256, 324258)
 Based on first-principle calculations, we investigate thetemperature effect on the lattice and electronic structures of WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Temperature effect on lattice and electronic structures of WTe$_2$ from first-principles study|Gang Liu,Huimei Liu,Jian Zhou,Xiangang Wan###
(324282, 324284)
 Ournumerical results show that the thermal expansion coefficients of WTe2 arehighly anisotropic and considerably large.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Temperature effect on lattice and electronic structures of WTe$_2$ from first-principles study|Gang Liu,Huimei Liu,Jian Zhou,Xiangang Wan###
(324315, 324315)
 However, the temperature (less than300 K) has ignorable effect on the Fermi surface of WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Temperature effect on lattice and electronic structures of WTe$_2$ from first-principles study|Gang Liu,Huimei Liu,Jian Zhou,Xiangang Wan###
(324334, 324336)
 However, the temperature (less than300 K) has ignorable effect on the Fermi surface of WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeMn/Pt
###Thickness dependence of spin Hall magnetoresistance in FeMn/Pt bilayers|Yumeng Yang,Yanjun Xu,Kui Yao,Yihong Wu###
(324406, 324409)
Thickness dependence of spin Hall magnetoresistance in FeMn/Pt bilayers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[254.0, 0.2, ',', 4],[256.0, 1.1, 'nm', 4],[272.0, -2, ',', 4]

FeMn/Pt
###Thickness dependence of spin Hall magnetoresistance in FeMn/Pt bilayers|Yumeng Yang,Yanjun Xu,Kui Yao,Yihong Wu###
(324426, 324429)
 We investigated spin Hall magnetoresistance in FeMn/Pt bilayers, which wasfound to be one order of magnitude larger than that of heavy metal andinsulating ferromagnet or antiferromagnet bilayer systems, and comparable tothat of NiFe/Pt bilayers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[234.0, 0.2, ',', 3],[236.0, 1.1, 'nm', 3],[252.0, -2, ',', 3]

NiFe/Pt
###Thickness dependence of spin Hall magnetoresistance in FeMn/Pt bilayers|Yumeng Yang,Yanjun Xu,Kui Yao,Yihong Wu###
(324492, 324495)
 We investigated spin Hall magnetoresistance in FeMn/Pt bilayers, which wasfound to be one order of magnitude larger than that of heavy metal andinsulating ferromagnet or antiferromagnet bilayer systems, and comparable tothat of NiFe/Pt bilayers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[168.0, 0.2, ',', 3],[170.0, 1.1, 'nm', 3],[186.0, -2, ',', 3]

FeMn
###Thickness dependence of spin Hall magnetoresistance in FeMn/Pt bilayers|Yumeng Yang,Yanjun Xu,Kui Yao,Yihong Wu###
(324529, 324530)
 The spin Hall magnetoresistance shows a non-monotonicdependence on the thicknesses of both FeMn and Pt.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 0.2, ',', 2],[135.0, 1.1, 'nm', 2],[151.0, -2, ',', 2]

Pt
###Thickness dependence of spin Hall magnetoresistance in FeMn/Pt bilayers|Yumeng Yang,Yanjun Xu,Kui Yao,Yihong Wu###
(324534, 324534)
 The spin Hall magnetoresistance shows a non-monotonicdependence on the thicknesses of both FeMn and Pt.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 0.2, ',', 2],[131.0, 1.1, 'nm', 2],[147.0, -2, ',', 2]

FeMn
###Thickness dependence of spin Hall magnetoresistance in FeMn/Pt bilayers|Yumeng Yang,Yanjun Xu,Kui Yao,Yihong Wu###
(324566, 324567)
 The former can be accountedfor by the thickness dependence of net magnetization in FeMn thin films,whereas the latter is mainly due to spin accumulation and diffusion in Pt.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 0.2, ',', 1],[98.0, 1.1, 'nm', 1],[114.0, -2, ',', 1]

Pt
###Thickness dependence of spin Hall magnetoresistance in FeMn/Pt bilayers|Yumeng Yang,Yanjun Xu,Kui Yao,Yihong Wu###
(324599, 324599)
 The former can be accountedfor by the thickness dependence of net magnetization in FeMn thin films,whereas the latter is mainly due to spin accumulation and diffusion in Pt.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 0.2, ',', 1],[66.0, 1.1, 'nm', 1],[82.0, -2, ',', 1]

Pt
###Thickness dependence of spin Hall magnetoresistance in FeMn/Pt bilayers|Yumeng Yang,Yanjun Xu,Kui Yao,Yihong Wu###
(324611, 324611)
Through analysis of the Pt thickness dependence, the spin Hall angle, spindiffusion length of Pt and the real part of spin mixing conductance weredetermined to be 0.2, 1.1 nm, and 5.5  1014 Omega-1 m<missing VAR>-2,respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 0.2, ',', 0],[54.0, 1.1, 'nm', 0],[70.0, -2, ',', 0]

Pt
###Thickness dependence of spin Hall magnetoresistance in FeMn/Pt bilayers|Yumeng Yang,Yanjun Xu,Kui Yao,Yihong Wu###
(324636, 324636)
Through analysis of the Pt thickness dependence, the spin Hall angle, spindiffusion length of Pt and the real part of spin mixing conductance weredetermined to be 0.2, 1.1 nm, and 5.5  1014 Omega-1 m<missing VAR>-2,respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 0.2, ',', 0],[29.0, 1.1, 'nm', 0],[45.0, -2, ',', 0]

FeSe
###Structural-transition-induced quasi two-dimensional Fermi surface in FeSe|Yue Sun,Tatsuhiro Yamada,Sunseng Pyon,Tsuyoshi Tamegai###
(324743, 324744)
Structural-transition-induced quasi two-dimensional Fermi surface in FeSe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[274.0, 2, 'D', 6],[299.0, 2, 'D', 6]

FeSe
###Structural-transition-induced quasi two-dimensional Fermi surface in FeSe|Yue Sun,Tatsuhiro Yamada,Sunseng Pyon,Tsuyoshi Tamegai###
(324805, 324806)
 We report detailed study of angular-dependent magnetoresistance (AMR) withtilting angel theta from c<missing VAR>-axis ranging from 0circ to 360circ on ahigh-quality FeSe single crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[212.0, 2, 'D', 5],[237.0, 2, 'D', 5]

(B)
###Structural-transition-induced quasi two-dimensional Fermi surface in FeSe|Yue Sun,Tatsuhiro Yamada,Sunseng Pyon,Tsuyoshi Tamegai###
(325001, 325003)
The obtained characteristic field (B) can be also roughly scaled in the 2Dapproximation, which indicates that the Dirac-cone-like state is also 2D innature.
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 2, 'D', 0],[40.0, 2, 'D', 0]

Cr2NiGa
###Giant Positive Magnetoresistance and field-induced metal insulator transition in Cr2NiGa|S. Pramanick,P. Dutta,S. Chatterjee,S. Giri,S. Majumdar###
(325079, 325082)
Giant Positive Magnetoresistance and field-induced metal insulator transition in Cr2NiGa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.25,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 112, '%', 3],[144.0, 150, 'kOe', 3],[185.0, 50, 'K', 4],[207.0, 80, 'kOe', 4],[242.0, 20, 'K', 5]

Cr2NiGa
###Giant Positive Magnetoresistance and field-induced metal insulator transition in Cr2NiGa|S. Pramanick,P. Dutta,S. Chatterjee,S. Giri,S. Majumdar###
(325112, 325115)
 We report here the magneto-transport properties of the newly synthesizedHeusler compound Cr2NiGa which crystallizes in a disordered cubic B2 structurebelonging to Pm-3m<missing VAR> space group.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.25,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 112, '%', 2],[111.0, 150, 'kOe', 2],[152.0, 50, 'K', 3],[174.0, 80, 'kOe', 3],[209.0, 20, 'K', 4]

B2
###Giant Positive Magnetoresistance and field-induced metal insulator transition in Cr2NiGa|S. Pramanick,P. Dutta,S. Chatterjee,S. Giri,S. Majumdar###
(325129, 325130)
 We report here the magneto-transport properties of the newly synthesizedHeusler compound Cr2NiGa which crystallizes in a disordered cubic B2 structurebelonging to Pm-3m<missing VAR> space group.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 112, '%', 2],[96.0, 150, 'kOe', 2],[137.0, 50, 'K', 3],[159.0, 80, 'kOe', 3],[194.0, 20, 'K', 4]

Pm
###Giant Positive Magnetoresistance and field-induced metal insulator transition in Cr2NiGa|S. Pramanick,P. Dutta,S. Chatterjee,S. Giri,S. Majumdar###
(325139, 325139)
 We report here the magneto-transport properties of the newly synthesizedHeusler compound Cr2NiGa which crystallizes in a disordered cubic B2 structurebelonging to Pm-3m<missing VAR> space group.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 112, '%', 2],[87.0, 150, 'kOe', 2],[128.0, 50, 'K', 3],[150.0, 80, 'kOe', 3],[185.0, 20, 'K', 4]

K
###Giant Positive Magnetoresistance and field-induced metal insulator transition in Cr2NiGa|S. Pramanick,P. Dutta,S. Chatterjee,S. Giri,S. Majumdar###
(325170, 325170)
 The sample is found to be paramagnetic down to2 K with metallic character.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 112, '%', 1],[56.0, 150, 'kOe', 1],[97.0, 50, 'K', 2],[119.0, 80, 'kOe', 2],[154.0, 20, 'K', 3]

La0.7Sr0.3MnO3
###Resistive Switching and Voltage Induced Modulation of Tunneling Magnetoresistance in Nanosized Perpendicular Organic Spin Valves|Robert Göckeritz,Nico Homonnay,Alexander Müller,Bodo Fuhrmann,Georg Schmidt###
(325487, 325493)
 The devices based on an La0.7Sr0.3MnO3/Alq3/Cotrilayer show resistive switching of up to 4-5 orders of magnitude andmagnetoresistance as high as -70% the latter even changing sign when voltagepulses are applied.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, -70, '%', 0]

Co
###Resistive Switching and Voltage Induced Modulation of Tunneling Magnetoresistance in Nanosized Perpendicular Organic Spin Valves|Robert Göckeritz,Nico Homonnay,Alexander Müller,Bodo Fuhrmann,Georg Schmidt###
(325498, 325498)
 The devices based on an La0.7Sr0.3MnO3/Alq3/Cotrilayer show resistive switching of up to 4-5 orders of magnitude andmagnetoresistance as high as -70% the latter even changing sign when voltagepulses are applied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, -70, '%', 0]

La0.7Sr0.3MnO3
###Resistive Switching and Voltage Induced Modulation of Tunneling Magnetoresistance in Nanosized Perpendicular Organic Spin Valves|Robert Göckeritz,Nico Homonnay,Alexander Müller,Bodo Fuhrmann,Georg Schmidt###
(325641, 325647)
 Modeling indicatesthat here the switching originates from a modification of theLa0.7Sr0.3MnO3 surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, -70, '%', 2]

F
###Impact of Anisotropy on Antiferromagnet Rotation in Heusler-type Ferromagnet/Antiferromagnet Epitaxial Bilayers|T. Hajiri,M. Matsushita,Y. Z. Ni,H. Asano###
(326091, 326091)
 We report the magnetotransport properties of ferromagnet (FM)/antiferromagnet(AFM) Fe2CrSi/Ru2MnGe epitaxial bilayers using current-in-planeconfigurations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Impact of Anisotropy on Antiferromagnet Rotation in Heusler-type Ferromagnet/Antiferromagnet Epitaxial Bilayers|T. Hajiri,M. Matsushita,Y. Z. Ni,H. Asano###
(326100, 326100)
 We report the magnetotransport properties of ferromagnet (FM)/antiferromagnet(AFM) Fe2CrSi/Ru2MnGe epitaxial bilayers using current-in-planeconfigurations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe2CrSi/Ru2MnGe
###Impact of Anisotropy on Antiferromagnet Rotation in Heusler-type Ferromagnet/Antiferromagnet Epitaxial Bilayers|T. Hajiri,M. Matsushita,Y. Z. Ni,H. Asano###
(326104, 326112)
 We report the magnetotransport properties of ferromagnet (FM)/antiferromagnet(AFM) Fe2CrSi/Ru2MnGe epitaxial bilayers using current-in-planeconfigurations.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Ru2MnGe
###Impact of Anisotropy on Antiferromagnet Rotation in Heusler-type Ferromagnet/Antiferromagnet Epitaxial Bilayers|T. Hajiri,M. Matsushita,Y. Z. Ni,H. Asano###
(326142, 326145)
 Above the critical thickness of the Ru2MnGe layer to induceexchange bias, symmetric and asymmetric curves were observed in response to thedirection of FM<missing VAR> magnetocrystalline anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Impact of Anisotropy on Antiferromagnet Rotation in Heusler-type Ferromagnet/Antiferromagnet Epitaxial Bilayers|T. Hajiri,M. Matsushita,Y. Z. Ni,H. Asano###
(326184, 326184)
 Above the critical thickness of the Ru2MnGe layer to induceexchange bias, symmetric and asymmetric curves were observed in response to thedirection of FM<missing VAR> magnetocrystalline anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Impact of Anisotropy on Antiferromagnet Rotation in Heusler-type Ferromagnet/Antiferromagnet Epitaxial Bilayers|T. Hajiri,M. Matsushita,Y. Z. Ni,H. Asano###
(326210, 326210)
 Because each magnetoresistancecurve showed full and partial AFM<missing VAR> rotation, the magnetoresistance curves implythe impact of the Fe2CrSi magnetocrystalline anisotropy to govern the AFM<missing VAR>rotation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe2CrSi
###Impact of Anisotropy on Antiferromagnet Rotation in Heusler-type Ferromagnet/Antiferromagnet Epitaxial Bilayers|T. Hajiri,M. Matsushita,Y. Z. Ni,H. Asano###
(326233, 326236)
 Because each magnetoresistancecurve showed full and partial AFM<missing VAR> rotation, the magnetoresistance curves implythe impact of the Fe2CrSi magnetocrystalline anisotropy to govern the AFM<missing VAR>rotation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.25,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Impact of Anisotropy on Antiferromagnet Rotation in Heusler-type Ferromagnet/Antiferromagnet Epitaxial Bilayers|T. Hajiri,M. Matsushita,Y. Z. Ni,H. Asano###
(326249, 326249)
 Because each magnetoresistancecurve showed full and partial AFM<missing VAR> rotation, the magnetoresistance curves implythe impact of the Fe2CrSi magnetocrystalline anisotropy to govern the AFM<missing VAR>rotation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe2CrSi
###Impact of Anisotropy on Antiferromagnet Rotation in Heusler-type Ferromagnet/Antiferromagnet Epitaxial Bilayers|T. Hajiri,M. Matsushita,Y. Z. Ni,H. Asano###
(326310, 326313)
 The maximum magnitude of the angular-dependent resistance-changeratio of the bilayers is more than an order of magnitude larger than that ofsingle-layer Fe2CrSi films, resulting from the reorientation of AFM<missing VAR> spinsvia the FM<missing VAR> rotation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.25,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Impact of Anisotropy on Antiferromagnet Rotation in Heusler-type Ferromagnet/Antiferromagnet Epitaxial Bilayers|T. Hajiri,M. Matsushita,Y. Z. Ni,H. Asano###
(326329, 326329)
 The maximum magnitude of the angular-dependent resistance-changeratio of the bilayers is more than an order of magnitude larger than that ofsingle-layer Fe2CrSi films, resulting from the reorientation of AFM<missing VAR> spinsvia the FM<missing VAR> rotation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Impact of Anisotropy on Antiferromagnet Rotation in Heusler-type Ferromagnet/Antiferromagnet Epitaxial Bilayers|T. Hajiri,M. Matsushita,Y. Z. Ni,H. Asano###
(326339, 326339)
 The maximum magnitude of the angular-dependent resistance-changeratio of the bilayers is more than an order of magnitude larger than that ofsingle-layer Fe2CrSi films, resulting from the reorientation of AFM<missing VAR> spinsvia the FM<missing VAR> rotation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Impact of Anisotropy on Antiferromagnet Rotation in Heusler-type Ferromagnet/Antiferromagnet Epitaxial Bilayers|T. Hajiri,M. Matsushita,Y. Z. Ni,H. Asano###
(326365, 326365)
 These results highlight the essential role of controllingthe AFM<missing VAR> rotation and reveal a facile approach to detect the AFM<missing VAR> moment even incurrent-in-plane configurations in FM<missing VAR>/AFM<missing VAR> bilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Impact of Anisotropy on Antiferromagnet Rotation in Heusler-type Ferromagnet/Antiferromagnet Epitaxial Bilayers|T. Hajiri,M. Matsushita,Y. Z. Ni,H. Asano###
(326387, 326387)
 These results highlight the essential role of controllingthe AFM<missing VAR> rotation and reveal a facile approach to detect the AFM<missing VAR> moment even incurrent-in-plane configurations in FM<missing VAR>/AFM<missing VAR> bilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Impact of Anisotropy on Antiferromagnet Rotation in Heusler-type Ferromagnet/Antiferromagnet Epitaxial Bilayers|T. Hajiri,M. Matsushita,Y. Z. Ni,H. Asano###
(326407, 326407)
 These results highlight the essential role of controllingthe AFM<missing VAR> rotation and reveal a facile approach to detect the AFM<missing VAR> moment even incurrent-in-plane configurations in FM<missing VAR>/AFM<missing VAR> bilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Impact of Anisotropy on Antiferromagnet Rotation in Heusler-type Ferromagnet/Antiferromagnet Epitaxial Bilayers|T. Hajiri,M. Matsushita,Y. Z. Ni,H. Asano###
(326411, 326411)
 These results highlight the essential role of controllingthe AFM<missing VAR> rotation and reveal a facile approach to detect the AFM<missing VAR> moment even incurrent-in-plane configurations in FM<missing VAR>/AFM<missing VAR> bilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuTiO3
###Strong Electron-Phonon Interaction and Colossal Magnetoresistance in EuTiO$_3$|Ruofan Chen,Ji-Chang Ren,Km Rubi,R. Mahendiran,Jian-Sheng Wang###
(326441, 326444)
Strong Electron-Phonon Interaction and Colossal Magnetoresistance in EuTiO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Strong Electron-Phonon Interaction and Colossal Magnetoresistance in EuTiO$_3$|Ruofan Chen,Ji-Chang Ren,Km Rubi,R. Mahendiran,Jian-Sheng Wang###
(326447, 326447)
 At low temperatures, EuTiO3 system has very large resistivities andexhibits colossal magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuTiO3
###Strong Electron-Phonon Interaction and Colossal Magnetoresistance in EuTiO$_3$|Ruofan Chen,Ji-Chang Ren,Km Rubi,R. Mahendiran,Jian-Sheng Wang###
(326454, 326457)
 At low temperatures, EuTiO3 system has very large resistivities andexhibits colossal magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuTiO3
###Strong Electron-Phonon Interaction and Colossal Magnetoresistance in EuTiO$_3$|Ruofan Chen,Ji-Chang Ren,Km Rubi,R. Mahendiran,Jian-Sheng Wang###
(326525, 326528)
 Based on a first principle calculation andthe dynamical mean-field theory for small polaron we have calculated thetransport properties of EuTiO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuTiO3
###Strong Electron-Phonon Interaction and Colossal Magnetoresistance in EuTiO$_3$|Ruofan Chen,Ji-Chang Ren,Km Rubi,R. Mahendiran,Jian-Sheng Wang###
(326605, 326608)
Besides, EuTiO3 is a weak antiferromagnetic material and its magnetizationwould slightly shift the subband via exchange interaction between conductionelectrons and magnetic atoms.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Extremely high magnetoresistance and conductivity in the type-II Weyl semimetals WP2 and MoP2|Nitesh Kumar,Yan Sun,Nan Xu,Kaustuv Manna,Mengyu Yao,Vicky Suess,Inge Leermakers,Olga Young,Tobias Foerster,Marcus Schmidt,Binghai Yan,Uli Zeitler,Ming Shi,Claudia Felser,Chandra Shekhar###
(326720, 326721)
Extremely high magnetoresistance and conductivity in the type-II Weyl semimetals WP2 and MoP2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[252.0, 3, 'nohm', 5],[274.0, 200, 'million', 5],[279.0, 63, 'T', 5],[282.0, 2.5, 'K', 5]

WP2
###Extremely high magnetoresistance and conductivity in the type-II Weyl semimetals WP2 and MoP2|Nitesh Kumar,Yan Sun,Nan Xu,Kaustuv Manna,Mengyu Yao,Vicky Suess,Inge Leermakers,Olga Young,Tobias Foerster,Marcus Schmidt,Binghai Yan,Uli Zeitler,Ming Shi,Claudia Felser,Chandra Shekhar###
(326727, 326729)
Extremely high magnetoresistance and conductivity in the type-II Weyl semimetals WP2 and MoP2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[244.0, 3, 'nohm', 5],[266.0, 200, 'million', 5],[271.0, 63, 'T', 5],[274.0, 2.5, 'K', 5]

MoP2
###Extremely high magnetoresistance and conductivity in the type-II Weyl semimetals WP2 and MoP2|Nitesh Kumar,Yan Sun,Nan Xu,Kaustuv Manna,Mengyu Yao,Vicky Suess,Inge Leermakers,Olga Young,Tobias Foerster,Marcus Schmidt,Binghai Yan,Uli Zeitler,Ming Shi,Claudia Felser,Chandra Shekhar###
(326733, 326735)
Extremely high magnetoresistance and conductivity in the type-II Weyl semimetals WP2 and MoP2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[238.0, 3, 'nohm', 5],[260.0, 200, 'million', 5],[265.0, 63, 'T', 5],[268.0, 2.5, 'K', 5]

In
###Extremely high magnetoresistance and conductivity in the type-II Weyl semimetals WP2 and MoP2|Nitesh Kumar,Yan Sun,Nan Xu,Kaustuv Manna,Mengyu Yao,Vicky Suess,Inge Leermakers,Olga Young,Tobias Foerster,Marcus Schmidt,Binghai Yan,Uli Zeitler,Ming Shi,Claudia Felser,Chandra Shekhar###
(326793, 326793)
 In particular, two closelyneighbouring Weyl points of the same chirality are protected from annihilationby structural distortions or defects, thereby significantly reducing thescattering probability between them.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[180.0, 3, 'nohm', 3],[202.0, 200, 'million', 3],[207.0, 63, 'T', 3],[210.0, 2.5, 'K', 3]

WP2
###Extremely high magnetoresistance and conductivity in the type-II Weyl semimetals WP2 and MoP2|Nitesh Kumar,Yan Sun,Nan Xu,Kaustuv Manna,Mengyu Yao,Vicky Suess,Inge Leermakers,Olga Young,Tobias Foerster,Marcus Schmidt,Binghai Yan,Uli Zeitler,Ming Shi,Claudia Felser,Chandra Shekhar###
(326879, 326881)
 Here we present the electronic propertiesof the transition metal diphosphides, WP2 and MoP2, that are type-II Weylsemimetals with robust Weyl points.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 3, 'nohm', 2],[114.0, 200, 'million', 2],[119.0, 63, 'T', 2],[122.0, 2.5, 'K', 2]

MoP2
###Extremely high magnetoresistance and conductivity in the type-II Weyl semimetals WP2 and MoP2|Nitesh Kumar,Yan Sun,Nan Xu,Kaustuv Manna,Mengyu Yao,Vicky Suess,Inge Leermakers,Olga Young,Tobias Foerster,Marcus Schmidt,Binghai Yan,Uli Zeitler,Ming Shi,Claudia Felser,Chandra Shekhar###
(326885, 326887)
 Here we present the electronic propertiesof the transition metal diphosphides, WP2 and MoP2, that are type-II Weylsemimetals with robust Weyl points.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 3, 'nohm', 2],[108.0, 200, 'million', 2],[113.0, 63, 'T', 2],[116.0, 2.5, 'K', 2]

II
###Extremely high magnetoresistance and conductivity in the type-II Weyl semimetals WP2 and MoP2|Nitesh Kumar,Yan Sun,Nan Xu,Kaustuv Manna,Mengyu Yao,Vicky Suess,Inge Leermakers,Olga Young,Tobias Foerster,Marcus Schmidt,Binghai Yan,Uli Zeitler,Ming Shi,Claudia Felser,Chandra Shekhar###
(326896, 326897)
 Here we present the electronic propertiesof the transition metal diphosphides, WP2 and MoP2, that are type-II Weylsemimetals with robust Weyl points.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 3, 'nohm', 2],[98.0, 200, 'million', 2],[103.0, 63, 'T', 2],[106.0, 2.5, 'K', 2]

WP2
###Extremely high magnetoresistance and conductivity in the type-II Weyl semimetals WP2 and MoP2|Nitesh Kumar,Yan Sun,Nan Xu,Kaustuv Manna,Mengyu Yao,Vicky Suess,Inge Leermakers,Olga Young,Tobias Foerster,Marcus Schmidt,Binghai Yan,Uli Zeitler,Ming Shi,Claudia Felser,Chandra Shekhar###
(326951, 326953)
 Oursingle crystals of WP2 display an extremely low residual low-temperatureresistivity of 3 nohm-cm accompanied by an enormous and highly anisotropicmagnetoresistance above 200 million % at 63 T and 2.5 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 3, 'nohm', 0],[42.0, 200, 'million', 0],[47.0, 63, 'T', 0],[50.0, 2.5, 'K', 0]

WP2
###Extremely high magnetoresistance and conductivity in the type-II Weyl semimetals WP2 and MoP2|Nitesh Kumar,Yan Sun,Nan Xu,Kaustuv Manna,Mengyu Yao,Vicky Suess,Inge Leermakers,Olga Young,Tobias Foerster,Marcus Schmidt,Binghai Yan,Uli Zeitler,Ming Shi,Claudia Felser,Chandra Shekhar###
(327059, 327061)
 Weobserve a large suppression of charge carrier backscattering in WP2 fromtransport measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 3, 'nohm', 2],[64.0, 200, 'million', 2],[59.0, 63, 'T', 2],[56.0, 2.5, 'K', 2]

Pt/Co/Pt
###Chiral magnetoresistance in Pt/Co/Pt zigzag wires|Yuxiang Yin,Dong-Soo Han,June-Seo Kim,Reinoud Lavrijsen,Kyung-Jin Lee,Seo-Won Lee,Kyoung-Whan Kim,Hyun-Woo Lee,Henk J. M. Swagten,Bert Koopmans###
(327085, 327089)
Chiral magnetoresistance in Pt/Co/Pt zigzag wires.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

I
###Chiral magnetoresistance in Pt/Co/Pt zigzag wires|Yuxiang Yin,Dong-Soo Han,June-Seo Kim,Reinoud Lavrijsen,Kyung-Jin Lee,Seo-Won Lee,Kyoung-Whan Kim,Hyun-Woo Lee,Henk J. M. Swagten,Bert Koopmans###
(327138, 327138)
 The Rashba effect leads to a chiral precession of the spins of movingelectrons while the Dzyaloshinskii-Moriya interaction (DMI) generatespreference towards a chiral profile of local spins.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Chiral magnetoresistance in Pt/Co/Pt zigzag wires|Yuxiang Yin,Dong-Soo Han,June-Seo Kim,Reinoud Lavrijsen,Kyung-Jin Lee,Seo-Won Lee,Kyoung-Whan Kim,Hyun-Woo Lee,Henk J. M. Swagten,Bert Koopmans###
(327235, 327235)
 Weobserve this magnetoresistance by measuring the domain wall (D<missing VAR>W) resistance ina uniquely designed Pt/Co/Pt zigzag wire, and by changing the chirality of theD<missing VAR>W with applying an in-plane magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt/Co/Pt
###Chiral magnetoresistance in Pt/Co/Pt zigzag wires|Yuxiang Yin,Dong-Soo Han,June-Seo Kim,Reinoud Lavrijsen,Kyung-Jin Lee,Seo-Won Lee,Kyoung-Whan Kim,Hyun-Woo Lee,Henk J. M. Swagten,Bert Koopmans###
(327249, 327253)
 Weobserve this magnetoresistance by measuring the domain wall (D<missing VAR>W) resistance ina uniquely designed Pt/Co/Pt zigzag wire, and by changing the chirality of theD<missing VAR>W with applying an in-plane magnetic field.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

W
###Chiral magnetoresistance in Pt/Co/Pt zigzag wires|Yuxiang Yin,Dong-Soo Han,June-Seo Kim,Reinoud Lavrijsen,Kyung-Jin Lee,Seo-Won Lee,Kyoung-Whan Kim,Hyun-Woo Lee,Henk J. M. Swagten,Bert Koopmans###
(327276, 327276)
 Weobserve this magnetoresistance by measuring the domain wall (D<missing VAR>W) resistance ina uniquely designed Pt/Co/Pt zigzag wire, and by changing the chirality of theD<missing VAR>W with applying an in-plane magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Chiral magnetoresistance in Pt/Co/Pt zigzag wires|Yuxiang Yin,Dong-Soo Han,June-Seo Kim,Reinoud Lavrijsen,Kyung-Jin Lee,Seo-Won Lee,Kyoung-Whan Kim,Hyun-Woo Lee,Henk J. M. Swagten,Bert Koopmans###
(327300, 327300)
 A chirality-dependent D<missing VAR>Wresistance is found, and a quantitative analysis shows a good agreement with atheory based on the Rashba model.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Chiral magnetoresistance in Pt/Co/Pt zigzag wires|Yuxiang Yin,Dong-Soo Han,June-Seo Kim,Reinoud Lavrijsen,Kyung-Jin Lee,Seo-Won Lee,Kyoung-Whan Kim,Hyun-Woo Lee,Henk J. M. Swagten,Bert Koopmans###
(327350, 327350)
 Moreover, the D<missing VAR>W resistance measurementallows us to independently determine the strength of the Rashba effect and theDMI simultaneously, and the result implies a possible correlation between theRashba effect, the DMI, and the symmetric Heisenberg exchange.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Chiral magnetoresistance in Pt/Co/Pt zigzag wires|Yuxiang Yin,Dong-Soo Han,June-Seo Kim,Reinoud Lavrijsen,Kyung-Jin Lee,Seo-Won Lee,Kyoung-Whan Kim,Hyun-Woo Lee,Henk J. M. Swagten,Bert Koopmans###
(327386, 327386)
 Moreover, the D<missing VAR>W resistance measurementallows us to independently determine the strength of the Rashba effect and theDMI simultaneously, and the result implies a possible correlation between theRashba effect, the DMI, and the symmetric Heisenberg exchange.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Chiral magnetoresistance in Pt/Co/Pt zigzag wires|Yuxiang Yin,Dong-Soo Han,June-Seo Kim,Reinoud Lavrijsen,Kyung-Jin Lee,Seo-Won Lee,Kyoung-Whan Kim,Hyun-Woo Lee,Henk J. M. Swagten,Bert Koopmans###
(327419, 327419)
 Moreover, the D<missing VAR>W resistance measurementallows us to independently determine the strength of the Rashba effect and theDMI simultaneously, and the result implies a possible correlation between theRashba effect, the DMI, and the symmetric Heisenberg exchange.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Negative to Positive Magnetoresistance transition in Functionalization of Carbon nanotube and Polyaniline Composite|Krishna Prasad Maity,Narendra Tanty,Ananya Patra,V Prasad###
(327484, 327484)
 Electrical resistivity and magnetoresistance(MR) in polyaniline(PANI) withcarbon nanotube(CNT) and functionalized carbon nanotube(f<missing VAR>CNT) composites havebeen studied for different weight percentage down to the temperature 4.2K andup to magnetic field 5T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 4.2, 'K', 0],[68.0, 5, 'T', 0],[134.0, 10, 'wt', 2]

I
###Negative to Positive Magnetoresistance transition in Functionalization of Carbon nanotube and Polyaniline Composite|Krishna Prasad Maity,Narendra Tanty,Ananya Patra,V Prasad###
(327487, 327487)
 Electrical resistivity and magnetoresistance(MR) in polyaniline(PANI) withcarbon nanotube(CNT) and functionalized carbon nanotube(f<missing VAR>CNT) composites havebeen studied for different weight percentage down to the temperature 4.2K andup to magnetic field 5T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 4.2, 'K', 0],[65.0, 5, 'T', 0],[131.0, 10, 'wt', 2]

CN
###Negative to Positive Magnetoresistance transition in Functionalization of Carbon nanotube and Polyaniline Composite|Krishna Prasad Maity,Narendra Tanty,Ananya Patra,V Prasad###
(327497, 327498)
 Electrical resistivity and magnetoresistance(MR) in polyaniline(PANI) withcarbon nanotube(CNT) and functionalized carbon nanotube(f<missing VAR>CNT) composites havebeen studied for different weight percentage down to the temperature 4.2K andup to magnetic field 5T.
Featurization terminated normally.
0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 4.2, 'K', 0],[54.0, 5, 'T', 0],[120.0, 10, 'wt', 2]

CN
###Negative to Positive Magnetoresistance transition in Functionalization of Carbon nanotube and Polyaniline Composite|Krishna Prasad Maity,Narendra Tanty,Ananya Patra,V Prasad###
(327511, 327512)
 Electrical resistivity and magnetoresistance(MR) in polyaniline(PANI) withcarbon nanotube(CNT) and functionalized carbon nanotube(f<missing VAR>CNT) composites havebeen studied for different weight percentage down to the temperature 4.2K andup to magnetic field 5T.
Featurization terminated normally.
0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 4.2, 'K', 0],[40.0, 5, 'T', 0],[106.0, 10, 'wt', 2]

CN
###Negative to Positive Magnetoresistance transition in Functionalization of Carbon nanotube and Polyaniline Composite|Krishna Prasad Maity,Narendra Tanty,Ananya Patra,V Prasad###
(327580, 327581)
 Resistivity increases significantly in composite atlow temperature due to functionalization of CNT<missing VAR> compare to only CNT<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 4.2, 'K', 1],[28.0, 5, 'T', 1],[37.0, 10, 'wt', 1]

CN
###Negative to Positive Magnetoresistance transition in Functionalization of Carbon nanotube and Polyaniline Composite|Krishna Prasad Maity,Narendra Tanty,Ananya Patra,V Prasad###
(327590, 327591)
 Resistivity increases significantly in composite atlow temperature due to functionalization of CNT<missing VAR> compare to only CNT<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 4.2, 'K', 1],[38.0, 5, 'T', 1],[27.0, 10, 'wt', 1]

CN
###Negative to Positive Magnetoresistance transition in Functionalization of Carbon nanotube and Polyaniline Composite|Krishna Prasad Maity,Narendra Tanty,Ananya Patra,V Prasad###
(327642, 327643)
Interestingly transition from negative to positive magnetoresistance has beenobserved for 10wt% of composite as the effect of disorder is more in f<missing VAR>CNT<missing VAR>/PANI.
Featurization terminated normally.
0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 4.2, 'K', 2],[90.0, 5, 'T', 2],[24.0, 10, 'wt', 0]

P
###Negative to Positive Magnetoresistance transition in Functionalization of Carbon nanotube and Polyaniline Composite|Krishna Prasad Maity,Narendra Tanty,Ananya Patra,V Prasad###
(327646, 327646)
Interestingly transition from negative to positive magnetoresistance has beenobserved for 10wt% of composite as the effect of disorder is more in f<missing VAR>CNT<missing VAR>/PANI.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 4.2, 'K', 2],[94.0, 5, 'T', 2],[28.0, 10, 'wt', 0]

NI
###Negative to Positive Magnetoresistance transition in Functionalization of Carbon nanotube and Polyaniline Composite|Krishna Prasad Maity,Narendra Tanty,Ananya Patra,V Prasad###
(327648, 327649)
Interestingly transition from negative to positive magnetoresistance has beenobserved for 10wt% of composite as the effect of disorder is more in f<missing VAR>CNT<missing VAR>/PANI.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 4.2, 'K', 2],[96.0, 5, 'T', 2],[30.0, 10, 'wt', 0]

CN
###Negative to Positive Magnetoresistance transition in Functionalization of Carbon nanotube and Polyaniline Composite|Krishna Prasad Maity,Narendra Tanty,Ananya Patra,V Prasad###
(327749, 327750)
 The long range Coulomb interaction between twopolarons screened by disorder in the composite of f<missing VAR>CNT<missing VAR>/PANI, increases theeffective on-site Coulomb repulsion energy to form bipolaron which leads tochange the sign of MR from negative to positive.
Featurization terminated normally.
0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[209.0, 4.2, 'K', 5],[197.0, 5, 'T', 5],[131.0, 10, 'wt', 3]

P
###Negative to Positive Magnetoresistance transition in Functionalization of Carbon nanotube and Polyaniline Composite|Krishna Prasad Maity,Narendra Tanty,Ananya Patra,V Prasad###
(327753, 327753)
 The long range Coulomb interaction between twopolarons screened by disorder in the composite of f<missing VAR>CNT<missing VAR>/PANI, increases theeffective on-site Coulomb repulsion energy to form bipolaron which leads tochange the sign of MR from negative to positive.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[213.0, 4.2, 'K', 5],[201.0, 5, 'T', 5],[135.0, 10, 'wt', 3]

NI
###Negative to Positive Magnetoresistance transition in Functionalization of Carbon nanotube and Polyaniline Composite|Krishna Prasad Maity,Narendra Tanty,Ananya Patra,V Prasad###
(327755, 327756)
 The long range Coulomb interaction between twopolarons screened by disorder in the composite of f<missing VAR>CNT<missing VAR>/PANI, increases theeffective on-site Coulomb repulsion energy to form bipolaron which leads tochange the sign of MR from negative to positive.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[215.0, 4.2, 'K', 5],[203.0, 5, 'T', 5],[137.0, 10, 'wt', 3]

GdPtBi
###Planar Hall effect in the Weyl semimetal GdPtBi|Nitesh Kumar,Satya N. Guin,Claudia Felser,Chandra Shekhar###
(327831, 327833)
Planar Hall effect in the Weyl semimetal GdPtBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 1.5, 'mohm', 5],[184.0, 2, 'K', 5],[189.0, 9, 'T', 5]

GdPtBi
###Planar Hall effect in the Weyl semimetal GdPtBi|Nitesh Kumar,Satya N. Guin,Claudia Felser,Chandra Shekhar###
(327979, 327981)
 We employ planar Hall effect as an effective technique in halfHeusler Weyl semimetal GdPtBi to study chiral anomaly.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 1.5, 'mohm', 1],[36.0, 2, 'K', 1],[41.0, 9, 'T', 1]

GdPtBi
###Planar Hall effect in the Weyl semimetal GdPtBi|Nitesh Kumar,Satya N. Guin,Claudia Felser,Chandra Shekhar###
(328079, 328081)
 Through the angle dependent transport studieswe establish that GdPtBi with relatively small orbital magnetoresistance is anideal candidate to observe large planar Hall effect .
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 1.5, 'mohm', 2],[62.0, 2, 'K', 2],[57.0, 9, 'T', 2]

ZrTe5
###Unusual magnetoresistance oscillations in preferentially oriented p-type polycrystalline ZrTe5|M. K. Hooda,C. S. Yadav###
(328142, 328144)
Unusual magnetoresistance oscillations in preferentially oriented p<missing VAR>-type polycrystalline ZrTe5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[267.0, 0.05, 'm', 8],[279.0, 2.2, 'X', 8]

H
###Unusual magnetoresistance oscillations in preferentially oriented p-type polycrystalline ZrTe5|M. K. Hooda,C. S. Yadav###
(328149, 328149)
 Recently H.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[262.0, 0.05, 'm', 7],[274.0, 2.2, 'X', 7]

(B)
###Unusual magnetoresistance oscillations in preferentially oriented p-type polycrystalline ZrTe5|M. K. Hooda,C. S. Yadav###
(328195, 328197)
 (arXiv 1704.00995) have reported quantum oscillationin magnetoresistance with the periodicity in logarithmic of magnetic field (B)for the p<missing VAR>-type ZrTe5.
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[214.0, 0.05, 'm', 5],[226.0, 2.2, 'X', 5]

ZrTe5
###Unusual magnetoresistance oscillations in preferentially oriented p-type polycrystalline ZrTe5|M. K. Hooda,C. S. Yadav###
(328208, 328210)
 (arXiv 1704.00995) have reported quantum oscillationin magnetoresistance with the periodicity in logarithmic of magnetic field (B)for the p<missing VAR>-type ZrTe5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[201.0, 0.05, 'm', 5],[213.0, 2.2, 'X', 5]

ZrTe5
###Unusual magnetoresistance oscillations in preferentially oriented p-type polycrystalline ZrTe5|M. K. Hooda,C. S. Yadav###
(328269, 328271)
 We have prepared highquality stoichiometric (p<missing VAR>-type) ZrTe5 polycrystals and observedmagnetoresistance (MR) oscillations, which are periodic in B.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 0.05, 'm', 3],[152.0, 2.2, 'X', 3]

B
###Unusual magnetoresistance oscillations in preferentially oriented p-type polycrystalline ZrTe5|M. K. Hooda,C. S. Yadav###
(328298, 328298)
 We have prepared highquality stoichiometric (p<missing VAR>-type) ZrTe5 polycrystals and observedmagnetoresistance (MR) oscillations, which are periodic in B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 0.05, 'm', 3],[125.0, 2.2, 'X', 3]

H
###Unusual magnetoresistance oscillations in preferentially oriented p-type polycrystalline ZrTe5|M. K. Hooda,C. S. Yadav###
(328317, 328317)
 Theseoscillations are in contrast to usual SdH oscillations or log B dependentoscillations as observed for tellurium deficient and stoichiometric ZrTe5respectively.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 0.05, 'm', 2],[106.0, 2.2, 'X', 2]

B
###Unusual magnetoresistance oscillations in preferentially oriented p-type polycrystalline ZrTe5|M. K. Hooda,C. S. Yadav###
(328325, 328325)
 Theseoscillations are in contrast to usual SdH oscillations or log B dependentoscillations as observed for tellurium deficient and stoichiometric ZrTe5respectively.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 0.05, 'm', 2],[98.0, 2.2, 'X', 2]

ZrTe5
###Unusual magnetoresistance oscillations in preferentially oriented p-type polycrystalline ZrTe5|M. K. Hooda,C. S. Yadav###
(328346, 328348)
 Theseoscillations are in contrast to usual SdH oscillations or log B dependentoscillations as observed for tellurium deficient and stoichiometric ZrTe5respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 0.05, 'm', 2],[75.0, 2.2, 'X', 2]

V
###Unusual magnetoresistance oscillations in preferentially oriented p-type polycrystalline ZrTe5|M. K. Hooda,C. S. Yadav###
(328432, 328432)
 We obtained smallcyclotron effective mass (m<missing VAR>  0.05 me), very high mobility of 2.2 X 104cm2/V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 0.05, 'm', 0],[9.0, 2.2, 'X', 0]

ZrTe5
###Unusual magnetoresistance oscillations in preferentially oriented p-type polycrystalline ZrTe5|M. K. Hooda,C. S. Yadav###
(328495, 328497)
 The magnetic data shows zero cusp paramagnetic susceptibility whichsupports the existence of topological surface states in ZrTe5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 0.05, 'm', 2],[72.0, 2.2, 'X', 2]

HgSe
###Novel magnetoresistance features in HgSe single crystal with low electron concentration|A. T. Lonchakov,S. B. Bobin,V. V. Deryushkin,V. I. Okulov,T. E. Govorkova,V. N. Neverov###
(328516, 328517)
Novel magnetoresistance features in HgSe single crystal with low electron concentration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HgSe
###Novel magnetoresistance features in HgSe single crystal with low electron concentration|A. T. Lonchakov,S. B. Bobin,V. V. Deryushkin,V. I. Okulov,T. E. Govorkova,V. N. Neverov###
(328555, 328556)
 For the first time, magnetoresistive properties of the single crystal of HgSewith a low electron concentration were studied in wide range of temperature andmagnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WS
###Novel magnetoresistance features in HgSe single crystal with low electron concentration|A. T. Lonchakov,S. B. Bobin,V. V. Deryushkin,V. I. Okulov,T. E. Govorkova,V. N. Neverov###
(328686, 328687)
 Two important features of magnetictransport were found - strong transverse magnetoresistance (MR) and negativelongitudinal MR, which can indicate the existence of the topological phase ofthe Weyl semimetal (WSM) in HgSe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HgSe
###Novel magnetoresistance features in HgSe single crystal with low electron concentration|A. T. Lonchakov,S. B. Bobin,V. V. Deryushkin,V. I. Okulov,T. E. Govorkova,V. N. Neverov###
(328693, 328694)
 Two important features of magnetictransport were found - strong transverse magnetoresistance (MR) and negativelongitudinal MR, which can indicate the existence of the topological phase ofthe Weyl semimetal (WSM) in HgSe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WS
###Novel magnetoresistance features in HgSe single crystal with low electron concentration|A. T. Lonchakov,S. B. Bobin,V. V. Deryushkin,V. I. Okulov,T. E. Govorkova,V. N. Neverov###
(328771, 328772)
 The obtained results are essential for the deeper understanding ofboth physics of gapless semiconductors and WSMs - promising materials forvarious applications in electronics, spintronics, computer and lasertechnologies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Observation of spin-orbit magnetoresistance in metallic thin films on magnetic insulators|Lifan Zhou,Hongkang Song,Kai Liu,Zhongzhi Luan,Peng Wang,Lei Sun,Shengwei Jiang,Hongjun Xiang,Yanbin Chen,Jun Du,Haifeng Ding,Ke Xia,Jiang Xiao,Di Wu###
(328925, 328926)
 Here, we present an experimental observation of thisnew type of spin-orbit magnetoresistance (SOMR) effect in a bilayer structureCu[Pt]/Y3Fe5O12 (YIG), where the Cu/YIG<missing VAR> interface is decorated with nanosize Ptislands.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu[Pt]/Y3Fe5O12
###Observation of spin-orbit magnetoresistance in metallic thin films on magnetic insulators|Lifan Zhou,Hongkang Song,Kai Liu,Zhongzhi Luan,Peng Wang,Lei Sun,Shengwei Jiang,Hongjun Xiang,Yanbin Chen,Jun Du,Haifeng Ding,Ke Xia,Jiang Xiao,Di Wu###
(328942, 328952)
 Here, we present an experimental observation of thisnew type of spin-orbit magnetoresistance (SOMR) effect in a bilayer structureCu[Pt]/Y3Fe5O12 (YIG), where the Cu/YIG<missing VAR> interface is decorated with nanosize Ptislands.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

N
###Dynamical Negative Differential Resistance in Antiferromagnetically Coupled Few-Atom Spin-Chains|Steffen Rolf-Pissarczyk,Shichao Yan,Luigi Malavolti,Jacob A. J. Burgess,Gregory McMurtrie,Sebastian Loth###
(329259, 329259)
 We present the appearance of negative differential resistance (NDR) inspin-dependent electron transport through a few-atom spin-chain.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 7, 'mV', 2]

Fe
###Dynamical Negative Differential Resistance in Antiferromagnetically Coupled Few-Atom Spin-Chains|Steffen Rolf-Pissarczyk,Shichao Yan,Luigi Malavolti,Jacob A. J. Burgess,Gregory McMurtrie,Sebastian Loth###
(329301, 329301)
 A chain ofthree antiferromagnetically coupled Fe atoms(Fe trimer) was positioned on aCu2N/Cu(100) surface and contacted with the spin-polarized tip of a scanningtunneling microscope, thus coupling the Fe trimer to one non-magnetic and onemagnetic lead.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 7, 'mV', 1]

Fe
###Dynamical Negative Differential Resistance in Antiferromagnetically Coupled Few-Atom Spin-Chains|Steffen Rolf-Pissarczyk,Shichao Yan,Luigi Malavolti,Jacob A. J. Burgess,Gregory McMurtrie,Sebastian Loth###
(329305, 329305)
 A chain ofthree antiferromagnetically coupled Fe atoms(Fe trimer) was positioned on aCu2N/Cu(100) surface and contacted with the spin-polarized tip of a scanningtunneling microscope, thus coupling the Fe trimer to one non-magnetic and onemagnetic lead.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 7, 'mV', 1]

Fe
###Dynamical Negative Differential Resistance in Antiferromagnetically Coupled Few-Atom Spin-Chains|Steffen Rolf-Pissarczyk,Shichao Yan,Luigi Malavolti,Jacob A. J. Burgess,Gregory McMurtrie,Sebastian Loth###
(329362, 329362)
 A chain ofthree antiferromagnetically coupled Fe atoms(Fe trimer) was positioned on aCu2N/Cu(100) surface and contacted with the spin-polarized tip of a scanningtunneling microscope, thus coupling the Fe trimer to one non-magnetic and onemagnetic lead.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 7, 'mV', 1]

N
###Dynamical Negative Differential Resistance in Antiferromagnetically Coupled Few-Atom Spin-Chains|Steffen Rolf-Pissarczyk,Shichao Yan,Luigi Malavolti,Jacob A. J. Burgess,Gregory McMurtrie,Sebastian Loth###
(329386, 329386)
 Pronounced NDR appears at the low bias of 7 mV where inelasticelectron tunneling dynamically locks the atomic spin in a long-lived excitedstate.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 7, 'mV', 0]

Fe
###Dynamical Negative Differential Resistance in Antiferromagnetically Coupled Few-Atom Spin-Chains|Steffen Rolf-Pissarczyk,Shichao Yan,Luigi Malavolti,Jacob A. J. Burgess,Gregory McMurtrie,Sebastian Loth###
(329463, 329463)
 This causes a rapid increase of the magnetoresistance betweenspin-polarized tip and Fe trimer and quenches elastic tunneling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 7, 'mV', 1]

Fe
###Dynamical Negative Differential Resistance in Antiferromagnetically Coupled Few-Atom Spin-Chains|Steffen Rolf-Pissarczyk,Shichao Yan,Luigi Malavolti,Jacob A. J. Burgess,Gregory McMurtrie,Sebastian Loth###
(329493, 329493)
 By varying thecoupling strength between tip and Fe trimer we find that in this transportregime the dynamic locking of the Fe trimer competes with magnetic exchangeinteraction, which statically forces the Fe trimer into thehigh-magnetoresistance state and removes the NDR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 7, 'mV', 2]

Fe
###Dynamical Negative Differential Resistance in Antiferromagnetically Coupled Few-Atom Spin-Chains|Steffen Rolf-Pissarczyk,Shichao Yan,Luigi Malavolti,Jacob A. J. Burgess,Gregory McMurtrie,Sebastian Loth###
(329522, 329522)
 By varying thecoupling strength between tip and Fe trimer we find that in this transportregime the dynamic locking of the Fe trimer competes with magnetic exchangeinteraction, which statically forces the Fe trimer into thehigh-magnetoresistance state and removes the NDR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 7, 'mV', 2]

Fe
###Dynamical Negative Differential Resistance in Antiferromagnetically Coupled Few-Atom Spin-Chains|Steffen Rolf-Pissarczyk,Shichao Yan,Luigi Malavolti,Jacob A. J. Burgess,Gregory McMurtrie,Sebastian Loth###
(329546, 329546)
 By varying thecoupling strength between tip and Fe trimer we find that in this transportregime the dynamic locking of the Fe trimer competes with magnetic exchangeinteraction, which statically forces the Fe trimer into thehigh-magnetoresistance state and removes the NDR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 7, 'mV', 2]

N
###Dynamical Negative Differential Resistance in Antiferromagnetically Coupled Few-Atom Spin-Chains|Steffen Rolf-Pissarczyk,Shichao Yan,Luigi Malavolti,Jacob A. J. Burgess,Gregory McMurtrie,Sebastian Loth###
(329567, 329567)
 By varying thecoupling strength between tip and Fe trimer we find that in this transportregime the dynamic locking of the Fe trimer competes with magnetic exchangeinteraction, which statically forces the Fe trimer into thehigh-magnetoresistance state and removes the NDR.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 7, 'mV', 2]

YBi
###Magnetoresistance in YBi and LuBi semimetals due to nearly perfect carrier compensation|Orest Pavlosiuk,Przemysław Swatek,Dariusz Kaczorowski,Piotr Wiśniewski###
(329584, 329585)
Magnetoresistance in YBi and LuBi semimetals due to nearly perfect carrier compensation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 9, 'T', 2],[103.0, 10, ',', 2],[105.0, 0, '%', 2],[110.0, 1, ',', 2],[112.0, 0, '%', 2]

LuBi
###Magnetoresistance in YBi and LuBi semimetals due to nearly perfect carrier compensation|Orest Pavlosiuk,Przemysław Swatek,Dariusz Kaczorowski,Piotr Wiśniewski###
(329589, 329590)
Magnetoresistance in YBi and LuBi semimetals due to nearly perfect carrier compensation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 9, 'T', 2],[98.0, 10, ',', 2],[100.0, 0, '%', 2],[105.0, 1, ',', 2],[107.0, 0, '%', 2]

At
###Magnetoresistance in YBi and LuBi semimetals due to nearly perfect carrier compensation|Orest Pavlosiuk,Przemysław Swatek,Dariusz Kaczorowski,Piotr Wiśniewski###
(329654, 329654)
 At low temperatures and in magnetic field of 9T themagnetoresistance attains the order of magnitude of 10,000% and 1,000%, on YBiand LuBi, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 9, 'T', 0],[34.0, 10, ',', 0],[36.0, 0, '%', 0],[41.0, 1, ',', 0],[43.0, 0, '%', 0]

YBi
###Magnetoresistance in YBi and LuBi semimetals due to nearly perfect carrier compensation|Orest Pavlosiuk,Przemysław Swatek,Dariusz Kaczorowski,Piotr Wiśniewski###
(329703, 329704)
 At low temperatures and in magnetic field of 9T themagnetoresistance attains the order of magnitude of 10,000% and 1,000%, on YBiand LuBi, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 9, 'T', 0],[15.0, 10, ',', 0],[13.0, 0, '%', 0],[8.0, 1, ',', 0],[6.0, 0, '%', 0]

LuBi
###Magnetoresistance in YBi and LuBi semimetals due to nearly perfect carrier compensation|Orest Pavlosiuk,Przemysław Swatek,Dariusz Kaczorowski,Piotr Wiśniewski###
(329709, 329710)
 At low temperatures and in magnetic field of 9T themagnetoresistance attains the order of magnitude of 10,000% and 1,000%, on YBiand LuBi, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 9, 'T', 0],[21.0, 10, ',', 0],[19.0, 0, '%', 0],[14.0, 1, ',', 0],[12.0, 0, '%', 0]

Sr
###Magnetotransport studies of optimally doped Sr(Fe${_{1-x}}$Co${_x}$)${_2}$As${_2}$|Rohit Kumar,Luminita Harnagea,Archana Lakhani,Sunil Nair###
(330243, 330243)
Magnetotransport studies of optimally doped Sr(Fe1-xCox)2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe1-xCo
###Magnetotransport studies of optimally doped Sr(Fe${_{1-x}}$Co${_x}$)${_2}$As${_2}$|Rohit Kumar,Luminita Harnagea,Archana Lakhani,Sunil Nair###
(330245, 330249)
Magnetotransport studies of optimally doped Sr(Fe1-xCox)2As2.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

As2
###Magnetotransport studies of optimally doped Sr(Fe${_{1-x}}$Co${_x}$)${_2}$As${_2}$|Rohit Kumar,Luminita Harnagea,Archana Lakhani,Sunil Nair###
(330253, 330254)
Magnetotransport studies of optimally doped Sr(Fe1-xCox)2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr(Fe0.88Co0.12)2As2
###Magnetotransport studies of optimally doped Sr(Fe${_{1-x}}$Co${_x}$)${_2}$As${_2}$|Rohit Kumar,Luminita Harnagea,Archana Lakhani,Sunil Nair###
(330284, 330293)
 We report magnetotransport measurements and its scaling analysis for theoptimally electron doped Sr(Fe0.88Co0.12)2As2 system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.352,0.048,0,0,0,0,0,0.4,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LuSb
###Weak antilocalization in quasi-two-dimensional electronic states of epitaxial LuSb thin films|Shouvik Chatterjee,Shoaib Khalid,Hadass S. Inbar,Aranya Goswami,Felipe Crasto de Lima,Abhishek Sharan,Fernando P. Sabino,Tobias L. Brown-Heft,Yu-Hao Chang,Alexei V. Fedorov,Dan Read,Anderson Janotti,Christopher J. Palmstrøm###
(330541, 330542)
Weak antilocalization in quasi-two-dimensional electronic states of epitaxial LuSb thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LuSb
###Weak antilocalization in quasi-two-dimensional electronic states of epitaxial LuSb thin films|Shouvik Chatterjee,Shoaib Khalid,Hadass S. Inbar,Aranya Goswami,Felipe Crasto de Lima,Abhishek Sharan,Fernando P. Sabino,Tobias L. Brown-Heft,Yu-Hao Chang,Alexei V. Fedorov,Dan Read,Anderson Janotti,Christopher J. Palmstrøm###
(330654, 330655)
 Here, by a combination of molecular-beam epitaxy,low-temperature transport, angle-resolved photoemssion spectroscopy, and hybriddensity functional theory we have unveiled the bandstructure of LuSb, whereelectron-hole compensation is identified as a mechanism responsible for largemagnetoresistance in this topologically trivial compound.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Weak antilocalization in quasi-two-dimensional electronic states of epitaxial LuSb thin films|Shouvik Chatterjee,Shoaib Khalid,Hadass S. Inbar,Aranya Goswami,Felipe Crasto de Lima,Abhishek Sharan,Fernando P. Sabino,Tobias L. Brown-Heft,Yu-Hao Chang,Alexei V. Fedorov,Dan Read,Anderson Janotti,Christopher J. Palmstrøm###
(330697, 330697)
 In contrast to bulksingle crystal analogues, quasi-two-dimensional behavior is observed in ourthin films for both electron and holelike carriers, indicative of dimensionalconfinement of the electronic states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr2Si2Te6
###Pressure-induced superconductivity and structural transition in ferromagnetic Cr2Si2Te6|Wanping Cai,Hualei Sun,Wei Xia,Changwei Wu,Ying Liu,Jia Yu,Junjie Yin,Hui Liu,Yu Gong,Dao-Xin Yao,Yanfeng Guo,Meng Wang###
(331210, 331215)
Pressure-induced superconductivity and structural transition in ferromagnetic Cr2Si2Te6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[197.0, 3, 'K', 4],[254.0, 47.1, 'GPa', 5],[265.0, 4.5, 'K', 5]

Cr2Si2Te6
###Pressure-induced superconductivity and structural transition in ferromagnetic Cr2Si2Te6|Wanping Cai,Hualei Sun,Wei Xia,Changwei Wu,Ying Liu,Jia Yu,Junjie Yin,Hui Liu,Yu Gong,Dao-Xin Yao,Yanfeng Guo,Meng Wang###
(331340, 331345)
 Here, we report investigations onferromagnetic van der Waals Cr2Si2Te6 via high-pressure synchrotron x<missing VAR>-raydiffraction, electrical resistance, Hall resistance, and magnetoresistancemeasurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 3, 'K', 1],[124.0, 47.1, 'GPa', 2],[135.0, 4.5, 'K', 2]

Cr2Si2Te6
###Pressure-induced superconductivity and structural transition in ferromagnetic Cr2Si2Te6|Wanping Cai,Hualei Sun,Wei Xia,Changwei Wu,Ying Liu,Jia Yu,Junjie Yin,Hui Liu,Yu Gong,Dao-Xin Yao,Yanfeng Guo,Meng Wang###
(331386, 331391)
 Under compression, Cr2Si2Te6 simultaneously undergoes astructural transition, emergence of superconductivity at 3 K, sign change ofthe magnetoresistance, and dramatic change of the Hall coefficient at 8 G<missing VAR>Pa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 3, 'K', 0],[78.0, 47.1, 'GPa', 1],[89.0, 4.5, 'K', 1]

Pa
###Pressure-induced superconductivity and structural transition in ferromagnetic Cr2Si2Te6|Wanping Cai,Hualei Sun,Wei Xia,Changwei Wu,Ying Liu,Jia Yu,Junjie Yin,Hui Liu,Yu Gong,Dao-Xin Yao,Yanfeng Guo,Meng Wang###
(331446, 331446)
 Under compression, Cr2Si2Te6 simultaneously undergoes astructural transition, emergence of superconductivity at 3 K, sign change ofthe magnetoresistance, and dramatic change of the Hall coefficient at 8 G<missing VAR>Pa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 3, 'K', 0],[23.0, 47.1, 'GPa', 1],[34.0, 4.5, 'K', 1]

Tc
###Pressure-induced superconductivity and structural transition in ferromagnetic Cr2Si2Te6|Wanping Cai,Hualei Sun,Wei Xia,Changwei Wu,Ying Liu,Jia Yu,Junjie Yin,Hui Liu,Yu Gong,Dao-Xin Yao,Yanfeng Guo,Meng Wang###
(331478, 331478)
The superconductivity persists up to the highest measured pressure of 47.1 GPawith a maximum Tc  4.5 K at 30 G<missing VAR>Pa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 3, 'K', 1],[9.0, 47.1, 'GPa', 0],[2.0, 4.5, 'K', 0]

Pa
###Pressure-induced superconductivity and structural transition in ferromagnetic Cr2Si2Te6|Wanping Cai,Hualei Sun,Wei Xia,Changwei Wu,Ying Liu,Jia Yu,Junjie Yin,Hui Liu,Yu Gong,Dao-Xin Yao,Yanfeng Guo,Meng Wang###
(331487, 331487)
The superconductivity persists up to the highest measured pressure of 47.1 GPawith a maximum Tc  4.5 K at 30 G<missing VAR>Pa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 3, 'K', 1],[18.0, 47.1, 'GPa', 0],[7.0, 4.5, 'K', 0]

Cr
###Pressure-induced superconductivity and structural transition in ferromagnetic Cr2Si2Te6|Wanping Cai,Hualei Sun,Wei Xia,Changwei Wu,Ying Liu,Jia Yu,Junjie Yin,Hui Liu,Yu Gong,Dao-Xin Yao,Yanfeng Guo,Meng Wang###
(331515, 331515)
 The discovery of superconductivity in thetwo-dimensional van der Waals ferromagnetic Cr-based Cr2Si2Te6 provides newperspectives to explore superconductivity and the interplay betweensuperconductivity and magnetism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 3, 'K', 2],[46.0, 47.1, 'GPa', 1],[35.0, 4.5, 'K', 1]

Cr2Si2Te6
###Pressure-induced superconductivity and structural transition in ferromagnetic Cr2Si2Te6|Wanping Cai,Hualei Sun,Wei Xia,Changwei Wu,Ying Liu,Jia Yu,Junjie Yin,Hui Liu,Yu Gong,Dao-Xin Yao,Yanfeng Guo,Meng Wang###
(331519, 331524)
 The discovery of superconductivity in thetwo-dimensional van der Waals ferromagnetic Cr-based Cr2Si2Te6 provides newperspectives to explore superconductivity and the interplay betweensuperconductivity and magnetism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 3, 'K', 2],[50.0, 47.1, 'GPa', 1],[39.0, 4.5, 'K', 1]

InBi
###Non-quadratic transverse magnetoresistance of the nodal line Dirac semimetal InBi|S. V. Zaitsev-Zotov,I. A. Cohn###
(331583, 331584)
Non-quadratic transverse magnetoresistance of the nodal line Dirac semimetal InBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

InBi
###Non-quadratic transverse magnetoresistance of the nodal line Dirac semimetal InBi|S. V. Zaitsev-Zotov,I. A. Cohn###
(331607, 331608)
 The transverse magnetoresistance of a nodal line Dirac semi-metal InBi hasbeen studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Non-quadratic transverse magnetoresistance of the nodal line Dirac semimetal InBi|S. V. Zaitsev-Zotov,I. A. Cohn###
(331637, 331637)
 In theregion of small magnetic fields  Blesssim 0.1T<missing VAR>, it is characterized by highcurvature, in the region of medium magnetic fields it is described by the sumof linear and quadratic contributions, and in the region of large magneticfields  Bgtrsim 1T<missing VAR>, it approaches a quadratic law with a curvature severaltimes smaller its zero field value.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Non-quadratic transverse magnetoresistance of the nodal line Dirac semimetal InBi|S. V. Zaitsev-Zotov,I. A. Cohn###
(331653, 331653)
 In theregion of small magnetic fields  Blesssim 0.1T<missing VAR>, it is characterized by highcurvature, in the region of medium magnetic fields it is described by the sumof linear and quadratic contributions, and in the region of large magneticfields  Bgtrsim 1T<missing VAR>, it approaches a quadratic law with a curvature severaltimes smaller its zero field value.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Non-quadratic transverse magnetoresistance of the nodal line Dirac semimetal InBi|S. V. Zaitsev-Zotov,I. A. Cohn###
(331730, 331730)
 In theregion of small magnetic fields  Blesssim 0.1T<missing VAR>, it is characterized by highcurvature, in the region of medium magnetic fields it is described by the sumof linear and quadratic contributions, and in the region of large magneticfields  Bgtrsim 1T<missing VAR>, it approaches a quadratic law with a curvature severaltimes smaller its zero field value.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Giant Magnetoresistance Effect in Organic Material and Its Potential for Magnetic Sensor|Mitra Djamal,Ramli,Sparisoma Viridi,Khairurrijal###
(332025, 332025)
 Today, the new GMR materials based on organic material obtainedafter allowing for Organic Magnetoresistance (OMAR) was found in OLEDs (organiclight-emitting diodes).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Giant Magnetoresistance Effect in Organic Material and Its Potential for Magnetic Sensor|Mitra Djamal,Ramli,Sparisoma Viridi,Khairurrijal###
(332037, 332037)
 Today, the new GMR materials based on organic material obtainedafter allowing for Organic Magnetoresistance (OMAR) was found in OLEDs (organiclight-emitting diodes).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ds
###Giant Magnetoresistance Effect in Organic Material and Its Potential for Magnetic Sensor|Mitra Djamal,Ramli,Sparisoma Viridi,Khairurrijal###
(332040, 332040)
 Today, the new GMR materials based on organic material obtainedafter allowing for Organic Magnetoresistance (OMAR) was found in OLEDs (organiclight-emitting diodes).
EXCEPTION 3: IndexError for Ds
In
Abstract does not contain any numbers.

Ni/Al203
###Spin Transfer from a Ferromagnet into a Semiconductor through an Oxide barrier|C. I. L. de Araujo,M. A. Tumelero,A. D. C. Viegas,N. Garcia,A. A. Pasa###
(332277, 332280)
 We present results on the magnetoresistance of the system Ni/Al203/n<missing VAR>-dopedSi/Al2O3/Ni in fabricated nanostructures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[32.0, 14, 'K', 1],[39.0, 75, '%', 1],[57.0, 30, 'K', 1],[156.0, 650, 'nm', 4]

Si/Al2O3/Ni
###Spin Transfer from a Ferromagnet into a Semiconductor through an Oxide barrier|C. I. L. de Araujo,M. A. Tumelero,A. D. C. Viegas,N. Garcia,A. A. Pasa###
(332287, 332294)
 We present results on the magnetoresistance of the system Ni/Al203/n<missing VAR>-dopedSi/Al2O3/Ni in fabricated nanostructures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[18.0, 14, 'K', 1],[25.0, 75, '%', 1],[43.0, 30, 'K', 1],[142.0, 650, 'nm', 4]

Ni
###Spin Transfer from a Ferromagnet into a Semiconductor through an Oxide barrier|C. I. L. de Araujo,M. A. Tumelero,A. D. C. Viegas,N. Garcia,A. A. Pasa###
(332378, 332378)
 We observe minimum resistance in the antiparallelconfigurations of the source and drain of Ni.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 14, 'K', 1],[59.0, 75, '%', 1],[41.0, 30, 'K', 1],[58.0, 650, 'nm', 2]

As
###Spin Transfer from a Ferromagnet into a Semiconductor through an Oxide barrier|C. I. L. de Araujo,M. A. Tumelero,A. D. C. Viegas,N. Garcia,A. A. Pasa###
(332381, 332381)
 As a possibility, it seems toindicate the existence of a magnetic state at the Si/oxide interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 14, 'K', 2],[62.0, 75, '%', 2],[44.0, 30, 'K', 2],[55.0, 650, 'nm', 1]

Si
###Spin Transfer from a Ferromagnet into a Semiconductor through an Oxide barrier|C. I. L. de Araujo,M. A. Tumelero,A. D. C. Viegas,N. Garcia,A. A. Pasa###
(332413, 332413)
 As a possibility, it seems toindicate the existence of a magnetic state at the Si/oxide interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 14, 'K', 2],[94.0, 75, '%', 2],[76.0, 30, 'K', 2],[23.0, 650, 'nm', 1]

ScPtBi
###Large low-field positive magnetoresistance in nonmagnetic half-Heusler ScPtBi single crystal|Zhipeng Hou,Yue Wang,Enke Liu,Hongwei Zhang,Wenhong Wang,Guangheng Wu###
(332543, 332545)
Large low-field positive magnetoresistance in nonmagnetic half-Heusler ScPtBi single crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 240, '%', 2],[84.0, 2, 'K', 2],[96.0, 1, 'T', 2],[215.0, 2, 'K', 4],[218.0, 2016, 'cm', 4],[228.0, 300, 'K', 4]

ScPtBi
###Large low-field positive magnetoresistance in nonmagnetic half-Heusler ScPtBi single crystal|Zhipeng Hou,Yue Wang,Enke Liu,Hongwei Zhang,Wenhong Wang,Guangheng Wu###
(332562, 332564)
 High-quality nonmagnetic half-Heusler ScPtBi single crystals were synthesizedby a Bi self-flux method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 240, '%', 1],[65.0, 2, 'K', 1],[77.0, 1, 'T', 1],[196.0, 2, 'K', 3],[199.0, 2016, 'cm', 3],[209.0, 300, 'K', 3]

Bi
###Large low-field positive magnetoresistance in nonmagnetic half-Heusler ScPtBi single crystal|Zhipeng Hou,Yue Wang,Enke Liu,Hongwei Zhang,Wenhong Wang,Guangheng Wu###
(332579, 332579)
 High-quality nonmagnetic half-Heusler ScPtBi single crystals were synthesizedby a Bi self-flux method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 240, '%', 1],[50.0, 2, 'K', 1],[62.0, 1, 'T', 1],[181.0, 2, 'K', 3],[184.0, 2016, 'cm', 3],[194.0, 300, 'K', 3]

ScPtBi
###Large low-field positive magnetoresistance in nonmagnetic half-Heusler ScPtBi single crystal|Zhipeng Hou,Yue Wang,Enke Liu,Hongwei Zhang,Wenhong Wang,Guangheng Wu###
(332709, 332711)
Moreover, Hall measurements indicated that ScPtBi single crystal showed a highmobility over a wide temperature region even up to room temperature (4050cm2V-1s<missing VAR>-1 at 2K - 2016 cm2V-1s<missing VAR>-1 at 300K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 240, '%', 2],[80.0, 2, 'K', 2],[68.0, 1, 'T', 2],[49.0, 2, 'K', 0],[52.0, 2016, 'cm', 0],[62.0, 300, 'K', 0]

V
###Large low-field positive magnetoresistance in nonmagnetic half-Heusler ScPtBi single crystal|Zhipeng Hou,Yue Wang,Enke Liu,Hongwei Zhang,Wenhong Wang,Guangheng Wu###
(332752, 332752)
Moreover, Hall measurements indicated that ScPtBi single crystal showed a highmobility over a wide temperature region even up to room temperature (4050cm2V-1s<missing VAR>-1 at 2K - 2016 cm2V-1s<missing VAR>-1 at 300K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 240, '%', 2],[123.0, 2, 'K', 2],[111.0, 1, 'T', 2],[8.0, 2, 'K', 0],[11.0, 2016, 'cm', 0],[21.0, 300, 'K', 0]

V
###Large low-field positive magnetoresistance in nonmagnetic half-Heusler ScPtBi single crystal|Zhipeng Hou,Yue Wang,Enke Liu,Hongwei Zhang,Wenhong Wang,Guangheng Wu###
(332765, 332765)
Moreover, Hall measurements indicated that ScPtBi single crystal showed a highmobility over a wide temperature region even up to room temperature (4050cm2V-1s<missing VAR>-1 at 2K - 2016 cm2V-1s<missing VAR>-1 at 300K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 240, '%', 2],[136.0, 2, 'K', 2],[124.0, 1, 'T', 2],[5.0, 2, 'K', 0],[2.0, 2016, 'cm', 0],[8.0, 300, 'K', 0]

ScPtBi
###Large low-field positive magnetoresistance in nonmagnetic half-Heusler ScPtBi single crystal|Zhipeng Hou,Yue Wang,Enke Liu,Hongwei Zhang,Wenhong Wang,Guangheng Wu###
(332792, 332794)
 These findings not only suggest thenonmagnetic ScPtBi semimetal a potential material candidate for applications inhigh-sensitivity magnetic sensors, but also are of great significance tocomprehensively understand the rare-earth based half-Heusler compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 240, '%', 3],[163.0, 2, 'K', 3],[151.0, 1, 'T', 3],[32.0, 2, 'K', 1],[29.0, 2016, 'cm', 1],[19.0, 300, 'K', 1]

La0.67Sr0.33MnO3
###Resonance spin-charge phenomena and mechanism of magnetoresistance anisotropy in manganite/metal bilayer structures|V. A. Atsarkin,B. V. Sorokin,I. V. Borisenko,V. V. Demidov,G. A. Ovsyannikov###
(332932, 332938)
 The dc voltage generated under ferromagnetic resonance has been studied inbilayer structures based on manganite thin epitaxial films La0.67Sr0.33MnO3(LSMO) and non-magnetic metals (Au, Pt, and SrRuO3) in the temperature range upto the Curie point.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.066,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.134,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Resonance spin-charge phenomena and mechanism of magnetoresistance anisotropy in manganite/metal bilayer structures|V. A. Atsarkin,B. V. Sorokin,I. V. Borisenko,V. V. Demidov,G. A. Ovsyannikov###
(332945, 332945)
 The dc voltage generated under ferromagnetic resonance has been studied inbilayer structures based on manganite thin epitaxial films La0.67Sr0.33MnO3(LSMO) and non-magnetic metals (Au, Pt, and SrRuO3) in the temperature range upto the Curie point.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Au
###Resonance spin-charge phenomena and mechanism of magnetoresistance anisotropy in manganite/metal bilayer structures|V. A. Atsarkin,B. V. Sorokin,I. V. Borisenko,V. V. Demidov,G. A. Ovsyannikov###
(332957, 332957)
 The dc voltage generated under ferromagnetic resonance has been studied inbilayer structures based on manganite thin epitaxial films La0.67Sr0.33MnO3(LSMO) and non-magnetic metals (Au, Pt, and SrRuO3) in the temperature range upto the Curie point.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Resonance spin-charge phenomena and mechanism of magnetoresistance anisotropy in manganite/metal bilayer structures|V. A. Atsarkin,B. V. Sorokin,I. V. Borisenko,V. V. Demidov,G. A. Ovsyannikov###
(332960, 332960)
 The dc voltage generated under ferromagnetic resonance has been studied inbilayer structures based on manganite thin epitaxial films La0.67Sr0.33MnO3(LSMO) and non-magnetic metals (Au, Pt, and SrRuO3) in the temperature range upto the Curie point.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O3
###Resonance spin-charge phenomena and mechanism of magnetoresistance anisotropy in manganite/metal bilayer structures|V. A. Atsarkin,B. V. Sorokin,I. V. Borisenko,V. V. Demidov,G. A. Ovsyannikov###
(332967, 332968)
 The dc voltage generated under ferromagnetic resonance has been studied inbilayer structures based on manganite thin epitaxial films La0.67Sr0.33MnO3(LSMO) and non-magnetic metals (Au, Pt, and SrRuO3) in the temperature range upto the Curie point.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H0
###Resonance spin-charge phenomena and mechanism of magnetoresistance anisotropy in manganite/metal bilayer structures|V. A. Atsarkin,B. V. Sorokin,I. V. Borisenko,V. V. Demidov,G. A. Ovsyannikov###
(333130, 333131)
The two phenomena were separated using the angular dependence of the effect,the external magnetic field H0 being rotated in the film plane.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeS
###Multi-band superconductivity and large anisotropy in FeS crystals|Hai Lin,Yufeng Li,Qiang Deng,Jie Xing,Jianzhong Liu,Xiyu Zhu,Huan Yang,Hai-Hu Wen###
(333290, 333291)
Multi-band superconductivity and large anisotropy in FeS crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 4.5, 'K', 2],[169.0, 290, '%', 4],[173.0, 9, 'T', 4],[176.0, 10, 'K', 4]

FeS
###Multi-band superconductivity and large anisotropy in FeS crystals|Hai Lin,Yufeng Li,Qiang Deng,Jie Xing,Jianzhong Liu,Xiyu Zhu,Huan Yang,Hai-Hu Wen###
(333328, 333329)
 By using a hydrothermal method, we have successfully grown crystals of thenewly discovered superconductor FeS, which has an isostructure of the ironbased superconductor FeSe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 4.5, 'K', 1],[131.0, 290, '%', 3],[135.0, 9, 'T', 3],[138.0, 10, 'K', 3]

FeSe
###Multi-band superconductivity and large anisotropy in FeS crystals|Hai Lin,Yufeng Li,Qiang Deng,Jie Xing,Jianzhong Liu,Xiyu Zhu,Huan Yang,Hai-Hu Wen###
(333351, 333352)
 By using a hydrothermal method, we have successfully grown crystals of thenewly discovered superconductor FeS, which has an isostructure of the ironbased superconductor FeSe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 4.5, 'K', 1],[108.0, 290, '%', 3],[112.0, 9, 'T', 3],[115.0, 10, 'K', 3]

H
###Multi-band superconductivity and large anisotropy in FeS crystals|Hai Lin,Yufeng Li,Qiang Deng,Jie Xing,Jianzhong Liu,Xiyu Zhu,Huan Yang,Hai-Hu Wen###
(333470, 333470)
 A hugemagnetoresistivity (290% at 9T and 10K, H parallel c<missing VAR>-axis) togetherwith a non-linear behavior of Hall resistivity vs.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 4.5, 'K', 2],[10.0, 290, '%', 0],[6.0, 9, 'T', 0],[3.0, 10, 'K', 0]

CrAuTe4
###Anisotropic physical properties and pressure dependent magnetic ordering of CrAuTe$_4$|Na Hyun Jo,Udhara S. Kaluarachchi,Yun Wu,Daixiang Mou,Lunan Huang,Valentin Taufour,Adam Kaminski,Sergey L. Bud'ko,Paul C. Canfield###
(333591, 333594)
Anisotropic physical properties and pressure dependent magnetic ordering of CrAuTe4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 5.25, 'GPa', 1],[116.0, 255, 'K', 2],[196.0, 236, 'K', 5],[199.0, 5.22, 'GPa', 5],[270.0, 2, 'GPa', 6],[318.0, 2, 'GPa', 7]

S
###Anisotropic physical properties and pressure dependent magnetic ordering of CrAuTe$_4$|Na Hyun Jo,Udhara S. Kaluarachchi,Yun Wu,Daixiang Mou,Lunan Huang,Valentin Taufour,Adam Kaminski,Sergey L. Bud'ko,Paul C. Canfield###
(333628, 333628)
 Systematic measurements of temperature dependent magnetization, resistivityand angle-resolved photoemission spectroscopy (ARPES) at ambient pressure aswell as resistivity under pressures up to 5.25 GPa were conducted on singlecrystals of CrAuTe4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 5.25, 'GPa', 0],[82.0, 255, 'K', 1],[162.0, 236, 'K', 4],[165.0, 5.22, 'GPa', 4],[236.0, 2, 'GPa', 5],[284.0, 2, 'GPa', 6]

CrAuTe4
###Anisotropic physical properties and pressure dependent magnetic ordering of CrAuTe$_4$|Na Hyun Jo,Udhara S. Kaluarachchi,Yun Wu,Daixiang Mou,Lunan Huang,Valentin Taufour,Adam Kaminski,Sergey L. Bud'ko,Paul C. Canfield###
(333668, 333671)
 Systematic measurements of temperature dependent magnetization, resistivityand angle-resolved photoemission spectroscopy (ARPES) at ambient pressure aswell as resistivity under pressures up to 5.25 GPa were conducted on singlecrystals of CrAuTe4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 5.25, 'GPa', 0],[39.0, 255, 'K', 1],[119.0, 236, 'K', 4],[122.0, 5.22, 'GPa', 4],[193.0, 2, 'GPa', 5],[241.0, 2, 'GPa', 6]

N
###Anisotropic physical properties and pressure dependent magnetic ordering of CrAuTe$_4$|Na Hyun Jo,Udhara S. Kaluarachchi,Yun Wu,Daixiang Mou,Lunan Huang,Valentin Taufour,Adam Kaminski,Sergey L. Bud'ko,Paul C. Canfield###
(333708, 333708)
 Magnetization data suggest that magnetic moments arealigned antiferromagnetically along the crystallographic c<missing VAR>-axis belowT<missing VAR>textrmN  255 K.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 5.25, 'GPa', 1],[2.0, 255, 'K', 0],[82.0, 236, 'K', 3],[85.0, 5.22, 'GPa', 3],[156.0, 2, 'GPa', 4],[204.0, 2, 'GPa', 5]

S
###Anisotropic physical properties and pressure dependent magnetic ordering of CrAuTe$_4$|Na Hyun Jo,Udhara S. Kaluarachchi,Yun Wu,Daixiang Mou,Lunan Huang,Valentin Taufour,Adam Kaminski,Sergey L. Bud'ko,Paul C. Canfield###
(333717, 333717)
 ARPES measurements show band reconstruction due to themagnetic ordering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 5.25, 'GPa', 2],[7.0, 255, 'K', 1],[73.0, 236, 'K', 2],[76.0, 5.22, 'GPa', 2],[147.0, 2, 'GPa', 3],[195.0, 2, 'GPa', 4]

N
###Anisotropic physical properties and pressure dependent magnetic ordering of CrAuTe$_4$|Na Hyun Jo,Udhara S. Kaluarachchi,Yun Wu,Daixiang Mou,Lunan Huang,Valentin Taufour,Adam Kaminski,Sergey L. Bud'ko,Paul C. Canfield###
(333788, 333788)
 The Neel temperature decreases monotonicallyunder pressure, decreasing to T<missing VAR>textrmN  236 K at 5.22 GPa.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 5.25, 'GPa', 4],[78.0, 255, 'K', 3],[2.0, 236, 'K', 0],[5.0, 5.22, 'GPa', 0],[76.0, 2, 'GPa', 1],[124.0, 2, 'GPa', 2]

N
###Anisotropic physical properties and pressure dependent magnetic ordering of CrAuTe$_4$|Na Hyun Jo,Udhara S. Kaluarachchi,Yun Wu,Daixiang Mou,Lunan Huang,Valentin Taufour,Adam Kaminski,Sergey L. Bud'ko,Paul C. Canfield###
(333811, 333811)
 The pressuredependencies of (i) T<missing VAR>textrmN, (ii) the residual resistivity ratio, and(iii) the size and power-law behavior of the low temperature magnetoresistanceall show anomalies near 2 GPa suggesting that there may be a phase transition(structural, magnetic, and/or electronic) induced by pressure.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 5.25, 'GPa', 5],[101.0, 255, 'K', 4],[21.0, 236, 'K', 1],[18.0, 5.22, 'GPa', 1],[53.0, 2, 'GPa', 0],[101.0, 2, 'GPa', 1]

LiTi2O4
###Crystallographic dependent transport properties and oxygen issue in superconducting LiTi2O4 thin films|Yanli Jia,Ge He,Heshan Yu,Wei Hu,Zhenzhong Yang,Jinan Shi,Zefeng Lin,Jie Yuan,Beiyi Zhu,Kai Liu,Lin Gu,Hong Li,Kui Jin###
(333977, 333981)
Crystallographic dependent transport properties and oxygen issue in superconducting LiTi2O4 thin films.
Featurization terminated normally.
0,0,0.14285714285714285,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 50, 'K', 3]

LiTi2O4
###Crystallographic dependent transport properties and oxygen issue in superconducting LiTi2O4 thin films|Yanli Jia,Ge He,Heshan Yu,Wei Hu,Zhenzhong Yang,Jinan Shi,Zefeng Lin,Jie Yuan,Beiyi Zhu,Kai Liu,Lin Gu,Hong Li,Kui Jin###
(334012, 334016)
 LiTi2O4 thin filmsoriented along [111]-, [110]-, and [001]-directions, to reveal thecrystallographic dependence of transport properties.
Featurization terminated normally.
0,0,0.14285714285714285,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 50, 'K', 1]

LiTi2O4
###Crystallographic dependent transport properties and oxygen issue in superconducting LiTi2O4 thin films|Yanli Jia,Ge He,Heshan Yu,Wei Hu,Zhenzhong Yang,Jinan Shi,Zefeng Lin,Jie Yuan,Beiyi Zhu,Kai Liu,Lin Gu,Hong Li,Kui Jin###
(334076, 334080)
 With decreasingtemperature, the LiTi2O4 displays roughly identical onset temperatures oftwofold symmetry of in-plane angular dependent magnetoresistivity (AMR) (at 100 K), crossover from negative- to positive- magnetoresistance (at  50 K),and coherence length in the superconducting state.
Featurization terminated normally.
0,0,0.14285714285714285,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 50, 'K', 0]

K
###Crystallographic dependent transport properties and oxygen issue in superconducting LiTi2O4 thin films|Yanli Jia,Ge He,Heshan Yu,Wei Hu,Zhenzhong Yang,Jinan Shi,Zefeng Lin,Jie Yuan,Beiyi Zhu,Kai Liu,Lin Gu,Hong Li,Kui Jin###
(334124, 334124)
 With decreasingtemperature, the LiTi2O4 displays roughly identical onset temperatures oftwofold symmetry of in-plane angular dependent magnetoresistivity (AMR) (at 100 K), crossover from negative- to positive- magnetoresistance (at  50 K),and coherence length in the superconducting state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 50, 'K', 0]

(Tc)
###Crystallographic dependent transport properties and oxygen issue in superconducting LiTi2O4 thin films|Yanli Jia,Ge He,Heshan Yu,Wei Hu,Zhenzhong Yang,Jinan Shi,Zefeng Lin,Jie Yuan,Beiyi Zhu,Kai Liu,Lin Gu,Hong Li,Kui Jin###
(334201, 334203)
 The superconductingtransition temperature (Tc) seems insensitive to the lattice parameter.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 50, 'K', 2]

Cs
###Crystallographic dependent transport properties and oxygen issue in superconducting LiTi2O4 thin films|Yanli Jia,Ge He,Heshan Yu,Wei Hu,Zhenzhong Yang,Jinan Shi,Zefeng Lin,Jie Yuan,Beiyi Zhu,Kai Liu,Lin Gu,Hong Li,Kui Jin###
(334240, 334240)
Moreover, the spherical aberration-corrected scanning transmission electronmicroscopy (Cs-STEM) discloses that oxygen vacancies exist in the LiTi2O4films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 50, 'K', 3]

S
###Crystallographic dependent transport properties and oxygen issue in superconducting LiTi2O4 thin films|Yanli Jia,Ge He,Heshan Yu,Wei Hu,Zhenzhong Yang,Jinan Shi,Zefeng Lin,Jie Yuan,Beiyi Zhu,Kai Liu,Lin Gu,Hong Li,Kui Jin###
(334242, 334242)
Moreover, the spherical aberration-corrected scanning transmission electronmicroscopy (Cs-STEM) discloses that oxygen vacancies exist in the LiTi2O4films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 50, 'K', 3]

LiTi2O4
###Crystallographic dependent transport properties and oxygen issue in superconducting LiTi2O4 thin films|Yanli Jia,Ge He,Heshan Yu,Wei Hu,Zhenzhong Yang,Jinan Shi,Zefeng Lin,Jie Yuan,Beiyi Zhu,Kai Liu,Lin Gu,Hong Li,Kui Jin###
(334262, 334266)
Moreover, the spherical aberration-corrected scanning transmission electronmicroscopy (Cs-STEM) discloses that oxygen vacancies exist in the LiTi2O4films.
Featurization terminated normally.
0,0,0.14285714285714285,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 50, 'K', 3]

Tc
###Crystallographic dependent transport properties and oxygen issue in superconducting LiTi2O4 thin films|Yanli Jia,Ge He,Heshan Yu,Wei Hu,Zhenzhong Yang,Jinan Shi,Zefeng Lin,Jie Yuan,Beiyi Zhu,Kai Liu,Lin Gu,Hong Li,Kui Jin###
(334308, 334308)
 These oxygen vacancies cause the change of lattice but show littleinfluence on superconductivity, differing from high-Tc cuprates where subtlevariation of oxygen way lead to a significant change in superconductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 50, 'K', 4]

Ag2Se
###Ultraquantum magnetoresistance in Kramers Weyl semimetal candidate $β$-Ag2Se|Cheng-Long Zhang,Frank Schindler,Haiwen Liu,Tay-Rong Chang,Su-Yang Xu,Guoqing Chang,Wei Hua,Hua Jiang,Zhujun Yuan,Junliang Sun,Horng-Tay Jeng,Hai-Zhou Lu,Hsin Lin,M. Zahid Hasan,X. C. Xie,Titus Neupert,Shuang Jia###
(334363, 334365)
Ultraquantum magnetoresistance in Kramers Weyl semimetal candidate -Ag2Se.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 9, 'T', 2]

Ag2Se
###Ultraquantum magnetoresistance in Kramers Weyl semimetal candidate $β$-Ag2Se|Cheng-Long Zhang,Frank Schindler,Haiwen Liu,Tay-Rong Chang,Su-Yang Xu,Guoqing Chang,Wei Hua,Hua Jiang,Zhujun Yuan,Junliang Sun,Horng-Tay Jeng,Hai-Zhou Lu,Hsin Lin,M. Zahid Hasan,X. C. Xie,Titus Neupert,Shuang Jia###
(334376, 334378)
 The topological semimetal beta-Ag2Se features a Kramers Weyl node at theorigin in momentum space and a quadruplet of spinless Weyl nodes, which areannihilated by spin-orbit coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 9, 'T', 1]

Ag2Se
###Ultraquantum magnetoresistance in Kramers Weyl semimetal candidate $β$-Ag2Se|Cheng-Long Zhang,Frank Schindler,Haiwen Liu,Tay-Rong Chang,Su-Yang Xu,Guoqing Chang,Wei Hua,Hua Jiang,Zhujun Yuan,Junliang Sun,Horng-Tay Jeng,Hai-Zhou Lu,Hsin Lin,M. Zahid Hasan,X. C. Xie,Titus Neupert,Shuang Jia###
(334447, 334449)
 We show that single crystallinebeta-Ag2Se manifests giant Shubnikov-de Haas oscillations in thelongitudinal magnetoresistance which stem from a small electron pocket that canbe driven beyond the quantum limit by a field less than 9 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 9, 'T', 0]

ZrTe5
###Giant Planar Hall Effect in the Dirac Semimetal ZrTe5|Peng Li,Chenhui Zhang,Junwei Zhang,Yan Wen,Xi-xiang Zhang###
(334676, 334678)
Giant Planar Hall Effect in the Dirac Semimetal ZrTe5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[225.0, 3, 'D', 4]

ZrTe5
###Giant Planar Hall Effect in the Dirac Semimetal ZrTe5|Peng Li,Chenhui Zhang,Junwei Zhang,Yan Wen,Xi-xiang Zhang###
(334718, 334720)
 ZrTe5 is considered to be anintriguing Dirac semimetal at the boundary of weak topological insulators andstrong topological insulators, though this claim still remains controversial.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[183.0, 3, 'D', 2]

ZrTe5
###Giant Planar Hall Effect in the Dirac Semimetal ZrTe5|Peng Li,Chenhui Zhang,Junwei Zhang,Yan Wen,Xi-xiang Zhang###
(334790, 334792)
Here, we report the observation in ZrTe5 of the giant planar Hall resistivitythat shows two different magnetic-field dependences as predicted by theory anda maximum at the Lifshitz transition temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 3, 'D', 1]

ZrTe5
###Giant Planar Hall Effect in the Dirac Semimetal ZrTe5|Peng Li,Chenhui Zhang,Junwei Zhang,Yan Wen,Xi-xiang Zhang###
(334878, 334880)
 We found that the giantplanar Hall resistivity fades out with decreasing the thickness of ZrTe5nanoplates, which may be ascribed to the vanishing of the 3D nature of thesamples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 3, 'D', 0]

In
###Giant Planar Hall Effect in the Dirac Semimetal ZrTe5|Peng Li,Chenhui Zhang,Junwei Zhang,Yan Wen,Xi-xiang Zhang###
(334915, 334915)
 In addition, we have observed a nontrivial Berry phase,chiral-anomaly-induced negative longitudinal magnetoresistance, and a giantin-plane anisotropic magnetoresistance in these ZrTe5 nanoplates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 3, 'D', 1]

ZrTe5
###Giant Planar Hall Effect in the Dirac Semimetal ZrTe5|Peng Li,Chenhui Zhang,Junwei Zhang,Yan Wen,Xi-xiang Zhang###
(334968, 334970)
 In addition, we have observed a nontrivial Berry phase,chiral-anomaly-induced negative longitudinal magnetoresistance, and a giantin-plane anisotropic magnetoresistance in these ZrTe5 nanoplates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 3, 'D', 1]

ZrTe5
###Giant Planar Hall Effect in the Dirac Semimetal ZrTe5|Peng Li,Chenhui Zhang,Junwei Zhang,Yan Wen,Xi-xiang Zhang###
(334990, 334992)
 All theexperimental observations demonstrated coherently that ZrTe5 is a Diracsemimetal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 3, 'D', 2]

YSb
###Studies of non-trivial band topology and electron-hole compensation in YSb|Payal Wadhwa,Shailesh Kumar,Alok Shukla,Rakesh Kumar###
(335034, 335035)
Studies of non-trivial band topology and electron-hole compensation in YSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Studies of non-trivial band topology and electron-hole compensation in YSb|Payal Wadhwa,Shailesh Kumar,Alok Shukla,Rakesh Kumar###
(335038, 335038)
 In this article, we study non-trivial topological phase and electron-holecompensation in extremely large magnetoresistance (XMR) material YSb underhydrostatic pressure using first-principles calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YSb
###Studies of non-trivial band topology and electron-hole compensation in YSb|Payal Wadhwa,Shailesh Kumar,Alok Shukla,Rakesh Kumar###
(335082, 335083)
 In this article, we study non-trivial topological phase and electron-holecompensation in extremely large magnetoresistance (XMR) material YSb underhydrostatic pressure using first-principles calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YSb
###Studies of non-trivial band topology and electron-hole compensation in YSb|Payal Wadhwa,Shailesh Kumar,Alok Shukla,Rakesh Kumar###
(335101, 335102)
 YSb is topologicallytrivial at ambient pressure, but undergoes a reentrant topological phasetransition under hydrostatic pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.67Sr0.33MnO3
###Room temperature biaxial magnetic anisotropy in La0.67Sr0.33MnO3 thin films on SrTiO3 buffered MgO (001) substrates for spintronic applications|Sandeep Kumar Chaluvadi,Fernando Ajejas,Pasquale Orgiani,Olivier Rousseau,Giovanni Vinai,Aleksandr Yu Petrov,Piero Torelli,Alain Pautrat,Julio Camarero,Paolo Perna,Laurence Mechin###
(335348, 335354)
Room temperature biaxial magnetic anisotropy in La0.67Sr0.33MnO3 thin films on SrTiO3 buffered MgO (001) substrates for spintronic applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.066,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.134,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Room temperature biaxial magnetic anisotropy in La0.67Sr0.33MnO3 thin films on SrTiO3 buffered MgO (001) substrates for spintronic applications|Sandeep Kumar Chaluvadi,Fernando Ajejas,Pasquale Orgiani,Olivier Rousseau,Giovanni Vinai,Aleksandr Yu Petrov,Piero Torelli,Alain Pautrat,Julio Camarero,Paolo Perna,Laurence Mechin###
(335362, 335365)
Room temperature biaxial magnetic anisotropy in La0.67Sr0.33MnO3 thin films on SrTiO3 buffered MgO (001) substrates for spintronic applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Room temperature biaxial magnetic anisotropy in La0.67Sr0.33MnO3 thin films on SrTiO3 buffered MgO (001) substrates for spintronic applications|Sandeep Kumar Chaluvadi,Fernando Ajejas,Pasquale Orgiani,Olivier Rousseau,Giovanni Vinai,Aleksandr Yu Petrov,Piero Torelli,Alain Pautrat,Julio Camarero,Paolo Perna,Laurence Mechin###
(335369, 335370)
Room temperature biaxial magnetic anisotropy in La0.67Sr0.33MnO3 thin films on SrTiO3 buffered MgO (001) substrates for spintronic applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OK
###Room temperature biaxial magnetic anisotropy in La0.67Sr0.33MnO3 thin films on SrTiO3 buffered MgO (001) substrates for spintronic applications|Sandeep Kumar Chaluvadi,Fernando Ajejas,Pasquale Orgiani,Olivier Rousseau,Giovanni Vinai,Aleksandr Yu Petrov,Piero Torelli,Alain Pautrat,Julio Camarero,Paolo Perna,Laurence Mechin###
(335489, 335490)
 Here, we investigate by means of vectorialMagneto-Optical Kerr Magnetometry (v-MOKE), half-metallic La0.67Sr0.33MnO3(LSMO) thin films that exhibit at room temperature pure biaxial magneticanisotropy if grown onto MgO (001) substrate with a thin SrTiO3 (ST<missing VAR>O) buffer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.67Sr0.33MnO3
###Room temperature biaxial magnetic anisotropy in La0.67Sr0.33MnO3 thin films on SrTiO3 buffered MgO (001) substrates for spintronic applications|Sandeep Kumar Chaluvadi,Fernando Ajejas,Pasquale Orgiani,Olivier Rousseau,Giovanni Vinai,Aleksandr Yu Petrov,Piero Torelli,Alain Pautrat,Julio Camarero,Paolo Perna,Laurence Mechin###
(335499, 335505)
 Here, we investigate by means of vectorialMagneto-Optical Kerr Magnetometry (v-MOKE), half-metallic La0.67Sr0.33MnO3(LSMO) thin films that exhibit at room temperature pure biaxial magneticanisotropy if grown onto MgO (001) substrate with a thin SrTiO3 (ST<missing VAR>O) buffer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.066,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.134,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Room temperature biaxial magnetic anisotropy in La0.67Sr0.33MnO3 thin films on SrTiO3 buffered MgO (001) substrates for spintronic applications|Sandeep Kumar Chaluvadi,Fernando Ajejas,Pasquale Orgiani,Olivier Rousseau,Giovanni Vinai,Aleksandr Yu Petrov,Piero Torelli,Alain Pautrat,Julio Camarero,Paolo Perna,Laurence Mechin###
(335512, 335512)
 Here, we investigate by means of vectorialMagneto-Optical Kerr Magnetometry (v-MOKE), half-metallic La0.67Sr0.33MnO3(LSMO) thin films that exhibit at room temperature pure biaxial magneticanisotropy if grown onto MgO (001) substrate with a thin SrTiO3 (ST<missing VAR>O) buffer.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Room temperature biaxial magnetic anisotropy in La0.67Sr0.33MnO3 thin films on SrTiO3 buffered MgO (001) substrates for spintronic applications|Sandeep Kumar Chaluvadi,Fernando Ajejas,Pasquale Orgiani,Olivier Rousseau,Giovanni Vinai,Aleksandr Yu Petrov,Piero Torelli,Alain Pautrat,Julio Camarero,Paolo Perna,Laurence Mechin###
(335544, 335545)
 Here, we investigate by means of vectorialMagneto-Optical Kerr Magnetometry (v-MOKE), half-metallic La0.67Sr0.33MnO3(LSMO) thin films that exhibit at room temperature pure biaxial magneticanisotropy if grown onto MgO (001) substrate with a thin SrTiO3 (ST<missing VAR>O) buffer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Room temperature biaxial magnetic anisotropy in La0.67Sr0.33MnO3 thin films on SrTiO3 buffered MgO (001) substrates for spintronic applications|Sandeep Kumar Chaluvadi,Fernando Ajejas,Pasquale Orgiani,Olivier Rousseau,Giovanni Vinai,Aleksandr Yu Petrov,Piero Torelli,Alain Pautrat,Julio Camarero,Paolo Perna,Laurence Mechin###
(335559, 335562)
 Here, we investigate by means of vectorialMagneto-Optical Kerr Magnetometry (v-MOKE), half-metallic La0.67Sr0.33MnO3(LSMO) thin films that exhibit at room temperature pure biaxial magneticanisotropy if grown onto MgO (001) substrate with a thin SrTiO3 (ST<missing VAR>O) buffer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Room temperature biaxial magnetic anisotropy in La0.67Sr0.33MnO3 thin films on SrTiO3 buffered MgO (001) substrates for spintronic applications|Sandeep Kumar Chaluvadi,Fernando Ajejas,Pasquale Orgiani,Olivier Rousseau,Giovanni Vinai,Aleksandr Yu Petrov,Piero Torelli,Alain Pautrat,Julio Camarero,Paolo Perna,Laurence Mechin###
(335565, 335565)
 Here, we investigate by means of vectorialMagneto-Optical Kerr Magnetometry (v-MOKE), half-metallic La0.67Sr0.33MnO3(LSMO) thin films that exhibit at room temperature pure biaxial magneticanisotropy if grown onto MgO (001) substrate with a thin SrTiO3 (ST<missing VAR>O) buffer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Room temperature biaxial magnetic anisotropy in La0.67Sr0.33MnO3 thin films on SrTiO3 buffered MgO (001) substrates for spintronic applications|Sandeep Kumar Chaluvadi,Fernando Ajejas,Pasquale Orgiani,Olivier Rousseau,Giovanni Vinai,Aleksandr Yu Petrov,Piero Torelli,Alain Pautrat,Julio Camarero,Paolo Perna,Laurence Mechin###
(335567, 335567)
 Here, we investigate by means of vectorialMagneto-Optical Kerr Magnetometry (v-MOKE), half-metallic La0.67Sr0.33MnO3(LSMO) thin films that exhibit at room temperature pure biaxial magneticanisotropy if grown onto MgO (001) substrate with a thin SrTiO3 (ST<missing VAR>O) buffer.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Room temperature biaxial magnetic anisotropy in La0.67Sr0.33MnO3 thin films on SrTiO3 buffered MgO (001) substrates for spintronic applications|Sandeep Kumar Chaluvadi,Fernando Ajejas,Pasquale Orgiani,Olivier Rousseau,Giovanni Vinai,Aleksandr Yu Petrov,Piero Torelli,Alain Pautrat,Julio Camarero,Paolo Perna,Laurence Mechin###
(335574, 335574)
In this way, we can avoid unwanted uniaxial magnetic anisotropy contributionsthat may be detrimental for specific applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFe2O4/Pt/CoFe2O4
###Enhancement of spin Hall magnetoresistance effect in CoFe2O4/Pt/CoFe2O4 trilayers|Takumi Yamamoto,Takashi Yanase,Toshihiro Shimada,Taro Nagahama###
(335722, 335734)
Enhancement of spin Hall magnetoresistance effect in CoFe2O4/Pt/CoFe2O4 trilayers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

S
###Enhancement of spin Hall magnetoresistance effect in CoFe2O4/Pt/CoFe2O4 trilayers|Takumi Yamamoto,Takashi Yanase,Toshihiro Shimada,Taro Nagahama###
(335748, 335748)
 The spin Hall magnetoresistance (SMR) phenomenon includes the fundamentalphysics of spin current, and originates from spin accumulation at an interfaceowing to the spin Hall effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Enhancement of spin Hall magnetoresistance effect in CoFe2O4/Pt/CoFe2O4 trilayers|Takumi Yamamoto,Takashi Yanase,Toshihiro Shimada,Taro Nagahama###
(335816, 335816)
 Although bilayers are the simplest structureexhibiting SMR, these exploit spin accumulation at only one side of a layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFe2O4/Pt/CoFe2O4
###Enhancement of spin Hall magnetoresistance effect in CoFe2O4/Pt/CoFe2O4 trilayers|Takumi Yamamoto,Takashi Yanase,Toshihiro Shimada,Taro Nagahama###
(335852, 335864)
Herein, trilayers of CoFe2O4/Pt/CoFe2O4 were fabricated and their spin Hallmagnetoresistance was investigated.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Pt
###Enhancement of spin Hall magnetoresistance effect in CoFe2O4/Pt/CoFe2O4 trilayers|Takumi Yamamoto,Takashi Yanase,Toshihiro Shimada,Taro Nagahama###
(335898, 335898)
 The trilayer structure featuring a thin Ptlayer exhibited an SMR ratio four times that of a CoFe2O4/Pt bilayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Enhancement of spin Hall magnetoresistance effect in CoFe2O4/Pt/CoFe2O4 trilayers|Takumi Yamamoto,Takashi Yanase,Toshihiro Shimada,Taro Nagahama###
(335907, 335907)
 The trilayer structure featuring a thin Ptlayer exhibited an SMR ratio four times that of a CoFe2O4/Pt bilayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFe2O4/Pt
###Enhancement of spin Hall magnetoresistance effect in CoFe2O4/Pt/CoFe2O4 trilayers|Takumi Yamamoto,Takashi Yanase,Toshihiro Shimada,Taro Nagahama###
(335923, 335929)
 The trilayer structure featuring a thin Ptlayer exhibited an SMR ratio four times that of a CoFe2O4/Pt bilayer.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

S
###Enhancement of spin Hall magnetoresistance effect in CoFe2O4/Pt/CoFe2O4 trilayers|Takumi Yamamoto,Takashi Yanase,Toshihiro Shimada,Taro Nagahama###
(335940, 335940)
 Further,the SMR ratio exhibited a dependence on Pt layer thickness that can beattributed to interference of the spin accumulations at both sides.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Enhancement of spin Hall magnetoresistance effect in CoFe2O4/Pt/CoFe2O4 trilayers|Takumi Yamamoto,Takashi Yanase,Toshihiro Shimada,Taro Nagahama###
(335954, 335954)
 Further,the SMR ratio exhibited a dependence on Pt layer thickness that can beattributed to interference of the spin accumulations at both sides.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(II)
###Quantum Transport in Topological Semimetals under Magnetic Fields (II)|Hai-Peng Sun,Hai-Zhou Lu###
(336056, 336059)
Quantum Transport in Topological Semimetals under Magnetic Fields (II).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[202.0, 3, 'D', 5]

At
###Quantum Transport in Topological Semimetals under Magnetic Fields (II)|Hai-Peng Sun,Hai-Zhou Lu###
(336121, 336121)
 At weak magnetic fields, we explain thenegative magnetoresistance in topological semimetals and topological insulatorsby using the semiclassical equations of motion with the nontrivial Berrycurvature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 3, 'D', 3]

At
###Quantum Transport in Topological Semimetals under Magnetic Fields (II)|Hai-Peng Sun,Hai-Zhou Lu###
(336206, 336206)
 At strong magnetic fields, we establish theories for thequantum oscillations in topological Weyl, Dirac, and nodal-line semimetals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 3, 'D', 1]

In
###Quantum Transport in Topological Semimetals under Magnetic Fields (II)|Hai-Peng Sun,Hai-Zhou Lu###
(336311, 336311)
 In the quantum limit at extremely strong magnetic fields, we findthat an unexpected Hall resistance reversal can be understood in terms of theWeyl fermion annihilation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 3, 'D', 1]

At
###Dynamics of Phase Separated States in the Double Exchange Model|Jing Luo,Gia-Wei Chern###
(337229, 337229)
 At small hole doping, the structure factor exhibits adominating signal of magnons from the background Neel order and localizedmodes from magnetic polarons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Dynamics of Phase Separated States in the Double Exchange Model|Jing Luo,Gia-Wei Chern###
(337263, 337263)
 At small hole doping, the structure factor exhibits adominating signal of magnons from the background Neel order and localizedmodes from magnetic polarons.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(FS)
###Origin of the butterfly magnetoresistance in a Dirac nodal-line system|Y. -C. Chiu,K. -W. Chen,R. Schönemann,V. L. Quito,S. Sur,Q. Zhou,D. Graf,E. Kampert,T. Förster,K. Yang,G. T. McCandless,Julia Y. Chan,R. E. Baumbach,M. D. Johannes,L. Balicas###
(337390, 337393)
 We report a study on the magnetotransport properties and on the Fermisurfaces (FS) of the ZrSi(Se,Te) semimetals.
Featurization successful!
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Origin of the butterfly magnetoresistance in a Dirac nodal-line system|Y. -C. Chiu,K. -W. Chen,R. Schönemann,V. L. Quito,S. Sur,Q. Zhou,D. Graf,E. Kampert,T. Förster,K. Yang,G. T. McCandless,Julia Y. Chan,R. E. Baumbach,M. D. Johannes,L. Balicas###
(337400, 337400)
 We report a study on the magnetotransport properties and on the Fermisurfaces (FS) of the ZrSi(Se,Te) semimetals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Se
###Origin of the butterfly magnetoresistance in a Dirac nodal-line system|Y. -C. Chiu,K. -W. Chen,R. Schönemann,V. L. Quito,S. Sur,Q. Zhou,D. Graf,E. Kampert,T. Förster,K. Yang,G. T. McCandless,Julia Y. Chan,R. E. Baumbach,M. D. Johannes,L. Balicas###
(337402, 337402)
 We report a study on the magnetotransport properties and on the Fermisurfaces (FS) of the ZrSi(Se,Te) semimetals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Te
###Origin of the butterfly magnetoresistance in a Dirac nodal-line system|Y. -C. Chiu,K. -W. Chen,R. Schönemann,V. L. Quito,S. Sur,Q. Zhou,D. Graf,E. Kampert,T. Förster,K. Yang,G. T. McCandless,Julia Y. Chan,R. E. Baumbach,M. D. Johannes,L. Balicas###
(337404, 337404)
 We report a study on the magnetotransport properties and on the Fermisurfaces (FS) of the ZrSi(Se,Te) semimetals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(SOC)
###Origin of the butterfly magnetoresistance in a Dirac nodal-line system|Y. -C. Chiu,K. -W. Chen,R. Schönemann,V. L. Quito,S. Sur,Q. Zhou,D. Graf,E. Kampert,T. Förster,K. Yang,G. T. McCandless,Julia Y. Chan,R. E. Baumbach,M. D. Johannes,L. Balicas###
(337438, 337442)
 Density Functional Theory (DFT)calculations, in absence of spin orbit coupling (SOC), reveal that both the Seand the Te compounds display Dirac nodal lines (DNL) close to the Fermi levelvarepsilonF at symmorphic and non-symmorphic positions, respectively.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Se
###Origin of the butterfly magnetoresistance in a Dirac nodal-line system|Y. -C. Chiu,K. -W. Chen,R. Schönemann,V. L. Quito,S. Sur,Q. Zhou,D. Graf,E. Kampert,T. Förster,K. Yang,G. T. McCandless,Julia Y. Chan,R. E. Baumbach,M. D. Johannes,L. Balicas###
(337453, 337453)
 Density Functional Theory (DFT)calculations, in absence of spin orbit coupling (SOC), reveal that both the Seand the Te compounds display Dirac nodal lines (DNL) close to the Fermi levelvarepsilonF at symmorphic and non-symmorphic positions, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Te
###Origin of the butterfly magnetoresistance in a Dirac nodal-line system|Y. -C. Chiu,K. -W. Chen,R. Schönemann,V. L. Quito,S. Sur,Q. Zhou,D. Graf,E. Kampert,T. Förster,K. Yang,G. T. McCandless,Julia Y. Chan,R. E. Baumbach,M. D. Johannes,L. Balicas###
(337460, 337460)
 Density Functional Theory (DFT)calculations, in absence of spin orbit coupling (SOC), reveal that both the Seand the Te compounds display Dirac nodal lines (DNL) close to the Fermi levelvarepsilonF at symmorphic and non-symmorphic positions, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Origin of the butterfly magnetoresistance in a Dirac nodal-line system|Y. -C. Chiu,K. -W. Chen,R. Schönemann,V. L. Quito,S. Sur,Q. Zhou,D. Graf,E. Kampert,T. Förster,K. Yang,G. T. McCandless,Julia Y. Chan,R. E. Baumbach,M. D. Johannes,L. Balicas###
(337490, 337490)
 Density Functional Theory (DFT)calculations, in absence of spin orbit coupling (SOC), reveal that both the Seand the Te compounds display Dirac nodal lines (DNL) close to the Fermi levelvarepsilonF at symmorphic and non-symmorphic positions, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Origin of the butterfly magnetoresistance in a Dirac nodal-line system|Y. -C. Chiu,K. -W. Chen,R. Schönemann,V. L. Quito,S. Sur,Q. Zhou,D. Graf,E. Kampert,T. Förster,K. Yang,G. T. McCandless,Julia Y. Chan,R. E. Baumbach,M. D. Johannes,L. Balicas###
(337523, 337523)
 Wefind that the geometry of their FSs agrees well with DFT predictions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZrSiSe
###Origin of the butterfly magnetoresistance in a Dirac nodal-line system|Y. -C. Chiu,K. -W. Chen,R. Schönemann,V. L. Quito,S. Sur,Q. Zhou,D. Graf,E. Kampert,T. Förster,K. Yang,G. T. McCandless,Julia Y. Chan,R. E. Baumbach,M. D. Johannes,L. Balicas###
(337539, 337541)
 ZrSiSedisplays low residual resistivities, pronounced magnetoresistivity, highcarrier mobilities, and a butterfly-like angle-dependent magnetoresistivity(AMR), although its DNL is not protected against gap opening.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Origin of the butterfly magnetoresistance in a Dirac nodal-line system|Y. -C. Chiu,K. -W. Chen,R. Schönemann,V. L. Quito,S. Sur,Q. Zhou,D. Graf,E. Kampert,T. Förster,K. Yang,G. T. McCandless,Julia Y. Chan,R. E. Baumbach,M. D. Johannes,L. Balicas###
(337609, 337609)
 As inCd3As2, its transport lifetime is found to be 102 to 103 timeslarger than its quantum one.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cd3As2
###Origin of the butterfly magnetoresistance in a Dirac nodal-line system|Y. -C. Chiu,K. -W. Chen,R. Schönemann,V. L. Quito,S. Sur,Q. Zhou,D. Graf,E. Kampert,T. Förster,K. Yang,G. T. McCandless,Julia Y. Chan,R. E. Baumbach,M. D. Johannes,L. Balicas###
(337614, 337617)
 As inCd3As2, its transport lifetime is found to be 102 to 103 timeslarger than its quantum one.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZrSiTe
###Origin of the butterfly magnetoresistance in a Dirac nodal-line system|Y. -C. Chiu,K. -W. Chen,R. Schönemann,V. L. Quito,S. Sur,Q. Zhou,D. Graf,E. Kampert,T. Förster,K. Yang,G. T. McCandless,Julia Y. Chan,R. E. Baumbach,M. D. Johannes,L. Balicas###
(337656, 337658)
 ZrSiTe, which possesses a protected DNL, displaysconventional transport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZrSiSe
###Origin of the butterfly magnetoresistance in a Dirac nodal-line system|Y. -C. Chiu,K. -W. Chen,R. Schönemann,V. L. Quito,S. Sur,Q. Zhou,D. Graf,E. Kampert,T. Förster,K. Yang,G. T. McCandless,Julia Y. Chan,R. E. Baumbach,M. D. Johannes,L. Balicas###
(337746, 337748)
 Nearly angle-independent effectivemasses with strong angle dependent quantum lifetimes lead to the butterfly AMRin ZrSiSe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CrI3
###Tailored tunnel magnetoresistance response in three ultrathin chromium trihalides|Hyun Ho Kim,Bowen Yang,Shangjie Tian,Chenghe Li,Guo-Xing Miao,Hechang Lei,Adam W. Tsen###
(337838, 337840)
 Recently, extremely large tunnel magnetoresistance(TMR) has been reported by several groups across ultrathin CrI3 byexploiting the weak antiferromagnetic coupling between adjacent layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 3, ',', 1]

Cr
###Tailored tunnel magnetoresistance response in three ultrathin chromium trihalides|Hyun Ho Kim,Bowen Yang,Shangjie Tian,Chenghe Li,Guo-Xing Miao,Hechang Lei,Adam W. Tsen###
(337893, 337893)
 Here,we report a comparative study of TMR in all three chromium trihalides (CrX<missing VAR>3,X<missing VAR> Cl, Br, or I) in the two-dimensional limit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 3, ',', 0]

Cl
###Tailored tunnel magnetoresistance response in three ultrathin chromium trihalides|Hyun Ho Kim,Bowen Yang,Shangjie Tian,Chenghe Li,Guo-Xing Miao,Hechang Lei,Adam W. Tsen###
(337901, 337901)
 Here,we report a comparative study of TMR in all three chromium trihalides (CrX<missing VAR>3,X<missing VAR> Cl, Br, or I) in the two-dimensional limit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 3, ',', 0]

Br
###Tailored tunnel magnetoresistance response in three ultrathin chromium trihalides|Hyun Ho Kim,Bowen Yang,Shangjie Tian,Chenghe Li,Guo-Xing Miao,Hechang Lei,Adam W. Tsen###
(337904, 337904)
 Here,we report a comparative study of TMR in all three chromium trihalides (CrX<missing VAR>3,X<missing VAR> Cl, Br, or I) in the two-dimensional limit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 3, ',', 0]

I
###Tailored tunnel magnetoresistance response in three ultrathin chromium trihalides|Hyun Ho Kim,Bowen Yang,Shangjie Tian,Chenghe Li,Guo-Xing Miao,Hechang Lei,Adam W. Tsen###
(337909, 337909)
 Here,we report a comparative study of TMR in all three chromium trihalides (CrX<missing VAR>3,X<missing VAR> Cl, Br, or I) in the two-dimensional limit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 3, ',', 0]

As
###Tailored tunnel magnetoresistance response in three ultrathin chromium trihalides|Hyun Ho Kim,Bowen Yang,Shangjie Tian,Chenghe Li,Guo-Xing Miao,Hechang Lei,Adam W. Tsen###
(337923, 337923)
 As the materials exhibitdifferent transition temperatures and interlayer magnetic ordering in theground state, tunneling measurements allow for an easy determination of thefield-temperature phase diagram for the three systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 3, ',', 1]

In
###Tailored tunnel magnetoresistance response in three ultrathin chromium trihalides|Hyun Ho Kim,Bowen Yang,Shangjie Tian,Chenghe Li,Guo-Xing Miao,Hechang Lei,Adam W. Tsen###
(338048, 338048)
 Inparticular, near the magnetic transition temperature, TMR is non-saturating upto the highest fields measured for all three compounds owing to the large,field-induced exchange coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 3, ',', 3]

CoNi
###Chiral anisotropic magnetoresistance of ferromagnetic helices|Henrik Maurenbrecher,Johannes Mendil,George Chatzipirpiridis,Michael Mattmann,Salvador Pané,Bradley J. Nelson,Pietro Gambardella###
(338156, 338157)
 We investigate the anisotropic magnetoresistance (AMR) of ferromagnetic CoNimicrohelices fabricated by electrodeposition and laser printing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Investigation of domain wall pinning by square anti-notches and its applications in three terminals MRAM|C. I. L. de Araujo,J. C. S. Gomes,D. Toscano,E. L. M. Paixao,P. Z. Coura,F. Sato,D. V. P. Massote,S. A. Leonel###
(338448, 338448)
 In this work we perform investigations of the competition between domain-wallpinning and attraction by anti-notches and finite device borders.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Investigation of domain wall pinning by square anti-notches and its applications in three terminals MRAM|C. I. L. de Araujo,J. C. S. Gomes,D. Toscano,E. L. M. Paixao,P. Z. Coura,F. Sato,D. V. P. Massote,S. A. Leonel###
(338612, 338612)
 In addition to this, a swift stabilization of the pinneddomain-wall is observed with a high percentage of orthogonal magnetization,enabling high magnetoresistive signal measurement.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CeSb
###Orbital-flop Induced Magnetoresistance Anisotropy in Rare Earth Monopnictide CeSb|Jing Xu,Fengcheng Wu,Jin-Ke Bao,Fei Han,Zhi-Li Xiao,Ivar Martin,Yang-Yang Lyu,Yong-Lei Wang,Duck Young Chung,Mingda Li,Wei Zhang,John E. Pearson,Jidong S. Jiang,Mercouri G. Kanatzidis,Wai-Kwong Kwok###
(338741, 338742)
Orbital-flop Induced Magnetoresistance Anisotropy in Rare Earth Monopnictide CeSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CeSb
###Orbital-flop Induced Magnetoresistance Anisotropy in Rare Earth Monopnictide CeSb|Jing Xu,Fengcheng Wu,Jin-Ke Bao,Fei Han,Zhi-Li Xiao,Ivar Martin,Yang-Yang Lyu,Yong-Lei Wang,Duck Young Chung,Mingda Li,Wei Zhang,John E. Pearson,Jidong S. Jiang,Mercouri G. Kanatzidis,Wai-Kwong Kwok###
(338877, 338878)
 Here, we report on orbital-flop inducedmagnetoresistance anisotropy in CeSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Orbital-flop Induced Magnetoresistance Anisotropy in Rare Earth Monopnictide CeSb|Jing Xu,Fengcheng Wu,Jin-Ke Bao,Fei Han,Zhi-Li Xiao,Ivar Martin,Yang-Yang Lyu,Yong-Lei Wang,Duck Young Chung,Mingda Li,Wei Zhang,John E. Pearson,Jidong S. Jiang,Mercouri G. Kanatzidis,Wai-Kwong Kwok###
(338881, 338881)
 In the low temperature highmagnetic-field driven ferromagnetic state, a series of additional minima appearin the angle-dependent magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PdFe
###Defect-implantation for the all-electrical detection of non-collinear spin-textures|Imara Lima Fernandes,Mohammed Bouhassoune,Samir Lounis###
(339671, 339672)
 Botheffects are monitored in terms of the defect-enhanced XMR (DXMR) as shown for3d<missing VAR> and 4d transition metal defects implanted at the vicinity of skyrmionsgenerated in PdFe bilayer deposited on Ir(111).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 4, 'd', 0]

Co/Pt
###Interfacial contributions to spin-orbit torque and magnetoresistance in ferromagnet/heavy-metal bilayers|K. D. Belashchenko,Alexey A. Kovalev,M. van Schilfgaarde###
(339882, 339884)
 The damping-like torque in Co/Pt andCo/Au bilayers can be described as a sum of the spin-Hall contribution, whichincreases with thickness in agreement with the spin-diffusion model, and acomparable interfacial contribution.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Co/Au
###Interfacial contributions to spin-orbit torque and magnetoresistance in ferromagnet/heavy-metal bilayers|K. D. Belashchenko,Alexey A. Kovalev,M. van Schilfgaarde###
(339889, 339891)
 The damping-like torque in Co/Pt andCo/Au bilayers can be described as a sum of the spin-Hall contribution, whichincreases with thickness in agreement with the spin-diffusion model, and acomparable interfacial contribution.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Co/Pt
###Interfacial contributions to spin-orbit torque and magnetoresistance in ferromagnet/heavy-metal bilayers|K. D. Belashchenko,Alexey A. Kovalev,M. van Schilfgaarde###
(339975, 339977)
 The magnetoconductance in the planeperpendicular to the current in Co/Pt bilayers is of the order of a conductancequantum per interfacial atom, exceeding the prediction of the spin-Hall modelby more than an order of magnitude.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

EuO
###Observation of Shubnikov-de Haas Oscillations, Non-trivial Berry Phase, Planar Hall and Anisotropic Magnetoresistance at the conducting interface of EuO-KTaO$_3$|Nand Kumar,Neha Wadehra,Ruchi Tomar,Sushanta Dattagupta,Sanjeev Kumar,S. Chakraverty###
(340140, 340141)
Observation of Shubnikov-de Haas Oscillations, Non-trivial Berry Phase, Planar Hall and Anisotropic Magnetoresistance at the conducting interface of EuO-KTaO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

KTaO3
###Observation of Shubnikov-de Haas Oscillations, Non-trivial Berry Phase, Planar Hall and Anisotropic Magnetoresistance at the conducting interface of EuO-KTaO$_3$|Nand Kumar,Neha Wadehra,Ruchi Tomar,Sushanta Dattagupta,Sanjeev Kumar,S. Chakraverty###
(340143, 340146)
Observation of Shubnikov-de Haas Oscillations, Non-trivial Berry Phase, Planar Hall and Anisotropic Magnetoresistance at the conducting interface of EuO-KTaO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Observation of Shubnikov-de Haas Oscillations, Non-trivial Berry Phase, Planar Hall and Anisotropic Magnetoresistance at the conducting interface of EuO-KTaO$_3$|Nand Kumar,Neha Wadehra,Ruchi Tomar,Sushanta Dattagupta,Sanjeev Kumar,S. Chakraverty###
(340268, 340268)
 We report here theShubnikov-de-Haas oscillations (SdH) at the conducting interface ofEuO-KTaO3 (KT<missing VAR>O).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuO
###Observation of Shubnikov-de Haas Oscillations, Non-trivial Berry Phase, Planar Hall and Anisotropic Magnetoresistance at the conducting interface of EuO-KTaO$_3$|Nand Kumar,Neha Wadehra,Ruchi Tomar,Sushanta Dattagupta,Sanjeev Kumar,S. Chakraverty###
(340282, 340283)
 We report here theShubnikov-de-Haas oscillations (SdH) at the conducting interface ofEuO-KTaO3 (KT<missing VAR>O).
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

KTaO3
###Observation of Shubnikov-de Haas Oscillations, Non-trivial Berry Phase, Planar Hall and Anisotropic Magnetoresistance at the conducting interface of EuO-KTaO$_3$|Nand Kumar,Neha Wadehra,Ruchi Tomar,Sushanta Dattagupta,Sanjeev Kumar,S. Chakraverty###
(340285, 340288)
 We report here theShubnikov-de-Haas oscillations (SdH) at the conducting interface ofEuO-KTaO3 (KT<missing VAR>O).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Observation of Shubnikov-de Haas Oscillations, Non-trivial Berry Phase, Planar Hall and Anisotropic Magnetoresistance at the conducting interface of EuO-KTaO$_3$|Nand Kumar,Neha Wadehra,Ruchi Tomar,Sushanta Dattagupta,Sanjeev Kumar,S. Chakraverty###
(340291, 340291)
 We report here theShubnikov-de-Haas oscillations (SdH) at the conducting interface ofEuO-KTaO3 (KT<missing VAR>O).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Observation of Shubnikov-de Haas Oscillations, Non-trivial Berry Phase, Planar Hall and Anisotropic Magnetoresistance at the conducting interface of EuO-KTaO$_3$|Nand Kumar,Neha Wadehra,Ruchi Tomar,Sushanta Dattagupta,Sanjeev Kumar,S. Chakraverty###
(340293, 340293)
 We report here theShubnikov-de-Haas oscillations (SdH) at the conducting interface ofEuO-KTaO3 (KT<missing VAR>O).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Observation of Shubnikov-de Haas Oscillations, Non-trivial Berry Phase, Planar Hall and Anisotropic Magnetoresistance at the conducting interface of EuO-KTaO$_3$|Nand Kumar,Neha Wadehra,Ruchi Tomar,Sushanta Dattagupta,Sanjeev Kumar,S. Chakraverty###
(340300, 340300)
 Observed SdH oscillations suggest the presence of two Fermisurfaces.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Observation of Shubnikov-de Haas Oscillations, Non-trivial Berry Phase, Planar Hall and Anisotropic Magnetoresistance at the conducting interface of EuO-KTaO$_3$|Nand Kumar,Neha Wadehra,Ruchi Tomar,Sushanta Dattagupta,Sanjeev Kumar,S. Chakraverty###
(340410, 340410)
 As in topological insulators, two fold planarHall and anisotropic magnetoresistance have also been observed in EuO-KT<missing VAR>O.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuO
###Observation of Shubnikov-de Haas Oscillations, Non-trivial Berry Phase, Planar Hall and Anisotropic Magnetoresistance at the conducting interface of EuO-KTaO$_3$|Nand Kumar,Neha Wadehra,Ruchi Tomar,Sushanta Dattagupta,Sanjeev Kumar,S. Chakraverty###
(340444, 340445)
 As in topological insulators, two fold planarHall and anisotropic magnetoresistance have also been observed in EuO-KT<missing VAR>O.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Observation of Shubnikov-de Haas Oscillations, Non-trivial Berry Phase, Planar Hall and Anisotropic Magnetoresistance at the conducting interface of EuO-KTaO$_3$|Nand Kumar,Neha Wadehra,Ruchi Tomar,Sushanta Dattagupta,Sanjeev Kumar,S. Chakraverty###
(340447, 340447)
 As in topological insulators, two fold planarHall and anisotropic magnetoresistance have also been observed in EuO-KT<missing VAR>O.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Observation of Shubnikov-de Haas Oscillations, Non-trivial Berry Phase, Planar Hall and Anisotropic Magnetoresistance at the conducting interface of EuO-KTaO$_3$|Nand Kumar,Neha Wadehra,Ruchi Tomar,Sushanta Dattagupta,Sanjeev Kumar,S. Chakraverty###
(340449, 340449)
 As in topological insulators, two fold planarHall and anisotropic magnetoresistance have also been observed in EuO-KT<missing VAR>O.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Observation of Shubnikov-de Haas Oscillations, Non-trivial Berry Phase, Planar Hall and Anisotropic Magnetoresistance at the conducting interface of EuO-KTaO$_3$|Nand Kumar,Neha Wadehra,Ruchi Tomar,Sushanta Dattagupta,Sanjeev Kumar,S. Chakraverty###
(340458, 340458)
Analyzing the SdH, Hall and magnetoresistance data, we have drawn a possibleband diagram near the Fermi surface.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn3Sn
###Integration of the Noncollinear Antiferromagnetic Metal Mn3Sn onto Ferroelectric Oxides for Electric-Field Control|Xiaoning Wang,Zexin Feng,Peixin Qin,Han Yan,Xiaorong Zhou,Huixin Guo,Zhaoguogang Leng,Weiqi Chen,Qiannan Jia,Zexiang Hu,Haojiang Wu,Xin Zhang,Chengbao Jiang,Zhiqi Liu###
(340514, 340516)
Integration of the Noncollinear Antiferromagnetic Metal Mn3Sn onto Ferroelectric Oxides for Electric-Field Control.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Integration of the Noncollinear Antiferromagnetic Metal Mn3Sn onto Ferroelectric Oxides for Electric-Field Control|Xiaoning Wang,Zexin Feng,Peixin Qin,Han Yan,Xiaorong Zhou,Huixin Guo,Zhaoguogang Leng,Weiqi Chen,Qiannan Jia,Zexiang Hu,Haojiang Wu,Xin Zhang,Chengbao Jiang,Zhiqi Liu###
(340622, 340622)
 In this work, we report the successful integration of theantiferromagnetic metal Mn3Sn thin films onto ferroelectric oxide PM<missing VAR>N-PT<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn3Sn
###Integration of the Noncollinear Antiferromagnetic Metal Mn3Sn onto Ferroelectric Oxides for Electric-Field Control|Xiaoning Wang,Zexin Feng,Peixin Qin,Han Yan,Xiaorong Zhou,Huixin Guo,Zhaoguogang Leng,Weiqi Chen,Qiannan Jia,Zexiang Hu,Haojiang Wu,Xin Zhang,Chengbao Jiang,Zhiqi Liu###
(340648, 340650)
 In this work, we report the successful integration of theantiferromagnetic metal Mn3Sn thin films onto ferroelectric oxide PM<missing VAR>N-PT<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Integration of the Noncollinear Antiferromagnetic Metal Mn3Sn onto Ferroelectric Oxides for Electric-Field Control|Xiaoning Wang,Zexin Feng,Peixin Qin,Han Yan,Xiaorong Zhou,Huixin Guo,Zhaoguogang Leng,Weiqi Chen,Qiannan Jia,Zexiang Hu,Haojiang Wu,Xin Zhang,Chengbao Jiang,Zhiqi Liu###
(340662, 340662)
 In this work, we report the successful integration of theantiferromagnetic metal Mn3Sn thin films onto ferroelectric oxide PM<missing VAR>N-PT<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Integration of the Noncollinear Antiferromagnetic Metal Mn3Sn onto Ferroelectric Oxides for Electric-Field Control|Xiaoning Wang,Zexin Feng,Peixin Qin,Han Yan,Xiaorong Zhou,Huixin Guo,Zhaoguogang Leng,Weiqi Chen,Qiannan Jia,Zexiang Hu,Haojiang Wu,Xin Zhang,Chengbao Jiang,Zhiqi Liu###
(340664, 340664)
 In this work, we report the successful integration of theantiferromagnetic metal Mn3Sn thin films onto ferroelectric oxide PM<missing VAR>N-PT<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Integration of the Noncollinear Antiferromagnetic Metal Mn3Sn onto Ferroelectric Oxides for Electric-Field Control|Xiaoning Wang,Zexin Feng,Peixin Qin,Han Yan,Xiaorong Zhou,Huixin Guo,Zhaoguogang Leng,Weiqi Chen,Qiannan Jia,Zexiang Hu,Haojiang Wu,Xin Zhang,Chengbao Jiang,Zhiqi Liu###
(340666, 340666)
 In this work, we report the successful integration of theantiferromagnetic metal Mn3Sn thin films onto ferroelectric oxide PM<missing VAR>N-PT<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn3Sn
###Integration of the Noncollinear Antiferromagnetic Metal Mn3Sn onto Ferroelectric Oxides for Electric-Field Control|Xiaoning Wang,Zexin Feng,Peixin Qin,Han Yan,Xiaorong Zhou,Huixin Guo,Zhaoguogang Leng,Weiqi Chen,Qiannan Jia,Zexiang Hu,Haojiang Wu,Xin Zhang,Chengbao Jiang,Zhiqi Liu###
(340725, 340727)
 Byoptimizing growth, we realized the large anomalous Hall effect with smallswitching magnetic fields of several tens mT fully comparable to those of bulkMn3Sn single crystals, anisotropic magnetoresistance and negative parallelmagnetoresistance in Mn3Sn thin films with antiferromagnetic order, which aresimilar to the signatures of the Weyl state in bulk Mn3Sn single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn3Sn
###Integration of the Noncollinear Antiferromagnetic Metal Mn3Sn onto Ferroelectric Oxides for Electric-Field Control|Xiaoning Wang,Zexin Feng,Peixin Qin,Han Yan,Xiaorong Zhou,Huixin Guo,Zhaoguogang Leng,Weiqi Chen,Qiannan Jia,Zexiang Hu,Haojiang Wu,Xin Zhang,Chengbao Jiang,Zhiqi Liu###
(340749, 340751)
 Byoptimizing growth, we realized the large anomalous Hall effect with smallswitching magnetic fields of several tens mT fully comparable to those of bulkMn3Sn single crystals, anisotropic magnetoresistance and negative parallelmagnetoresistance in Mn3Sn thin films with antiferromagnetic order, which aresimilar to the signatures of the Weyl state in bulk Mn3Sn single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn3Sn
###Integration of the Noncollinear Antiferromagnetic Metal Mn3Sn onto Ferroelectric Oxides for Electric-Field Control|Xiaoning Wang,Zexin Feng,Peixin Qin,Han Yan,Xiaorong Zhou,Huixin Guo,Zhaoguogang Leng,Weiqi Chen,Qiannan Jia,Zexiang Hu,Haojiang Wu,Xin Zhang,Chengbao Jiang,Zhiqi Liu###
(340789, 340791)
 Byoptimizing growth, we realized the large anomalous Hall effect with smallswitching magnetic fields of several tens mT fully comparable to those of bulkMn3Sn single crystals, anisotropic magnetoresistance and negative parallelmagnetoresistance in Mn3Sn thin films with antiferromagnetic order, which aresimilar to the signatures of the Weyl state in bulk Mn3Sn single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn3Sn
###Integration of the Noncollinear Antiferromagnetic Metal Mn3Sn onto Ferroelectric Oxides for Electric-Field Control|Xiaoning Wang,Zexin Feng,Peixin Qin,Han Yan,Xiaorong Zhou,Huixin Guo,Zhaoguogang Leng,Weiqi Chen,Qiannan Jia,Zexiang Hu,Haojiang Wu,Xin Zhang,Chengbao Jiang,Zhiqi Liu###
(340822, 340824)
 Moreimportantly, we found that the anomalous Hall effect in antiferromagnetic Mn3Snthin films can be manipulated by electric fields applied onto the ferroelectricmaterials, thus demonstrating the feasibility of Mn3Sn-based topologicalspintronic devices operated in an ultralow power manner.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn3Sn
###Integration of the Noncollinear Antiferromagnetic Metal Mn3Sn onto Ferroelectric Oxides for Electric-Field Control|Xiaoning Wang,Zexin Feng,Peixin Qin,Han Yan,Xiaorong Zhou,Huixin Guo,Zhaoguogang Leng,Weiqi Chen,Qiannan Jia,Zexiang Hu,Haojiang Wu,Xin Zhang,Chengbao Jiang,Zhiqi Liu###
(340865, 340867)
 Moreimportantly, we found that the anomalous Hall effect in antiferromagnetic Mn3Snthin films can be manipulated by electric fields applied onto the ferroelectricmaterials, thus demonstrating the feasibility of Mn3Sn-based topologicalspintronic devices operated in an ultralow power manner.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YRh6Ge4
###Transport evidence of triply degenerate nodal semimetal YRh6Ge4|Yanglin Zhu,Xin Gui,Yu Wang,David Graf,Weiwei Xie,Zhiqiang Mao###
(340913, 340917)
Transport evidence of triply degenerate nodal semimetal YRh6Ge4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.36363636363636365,0,0,0,0,0,0,0.09090909090909091,0,0,0,0,0,0.5454545454545454,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YRh6Ge4
###Transport evidence of triply degenerate nodal semimetal YRh6Ge4|Yanglin Zhu,Xin Gui,Yu Wang,David Graf,Weiwei Xie,Zhiqiang Mao###
(340932, 340936)
 We have investigated magnetotransport properties of YRh6Ge4, which wasrecently predicted to be a triply degenerate nodal semimetal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.36363636363636365,0,0,0,0,0,0,0.09090909090909091,0,0,0,0,0,0.5454545454545454,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Transport evidence of triply degenerate nodal semimetal YRh6Ge4|Yanglin Zhu,Xin Gui,Yu Wang,David Graf,Weiwei Xie,Zhiqiang Mao###
(341039, 341039)
 Furthermore, we have also observedShubnikov-de Haas (SdH) quantum oscillations in the magnetoresistivitymeasurements on this material.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Transport evidence of triply degenerate nodal semimetal YRh6Ge4|Yanglin Zhu,Xin Gui,Yu Wang,David Graf,Weiwei Xie,Zhiqiang Mao###
(341071, 341071)
 The analyses of the SdH data reveal twopoint-like Fermi surfaces and these pockets are found to host nearly masslessfermions.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YRh6Ge4
###Transport evidence of triply degenerate nodal semimetal YRh6Ge4|Yanglin Zhu,Xin Gui,Yu Wang,David Graf,Weiwei Xie,Zhiqiang Mao###
(341155, 341159)
 The small size of these Fermi pockets is in a good agreement with thetheoretical prediction that the triply degenerate point in YRh6Ge4 is muchcloser to the Fermi level than previously demonstrated triply degenerate nodalsemimetals such as MoP and WC.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.36363636363636365,0,0,0,0,0,0,0.09090909090909091,0,0,0,0,0,0.5454545454545454,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoP
###Transport evidence of triply degenerate nodal semimetal YRh6Ge4|Yanglin Zhu,Xin Gui,Yu Wang,David Graf,Weiwei Xie,Zhiqiang Mao###
(341195, 341196)
 The small size of these Fermi pockets is in a good agreement with thetheoretical prediction that the triply degenerate point in YRh6Ge4 is muchcloser to the Fermi level than previously demonstrated triply degenerate nodalsemimetals such as MoP and WC.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WC
###Transport evidence of triply degenerate nodal semimetal YRh6Ge4|Yanglin Zhu,Xin Gui,Yu Wang,David Graf,Weiwei Xie,Zhiqiang Mao###
(341200, 341201)
 The small size of these Fermi pockets is in a good agreement with thetheoretical prediction that the triply degenerate point in YRh6Ge4 is muchcloser to the Fermi level than previously demonstrated triply degenerate nodalsemimetals such as MoP and WC.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YRh6Ge4
###Transport evidence of triply degenerate nodal semimetal YRh6Ge4|Yanglin Zhu,Xin Gui,Yu Wang,David Graf,Weiwei Xie,Zhiqiang Mao###
(341210, 341214)
 These results suggest YRh6Ge4 may serve as amodel system to probe exotic properties of three-component fermions andunderstand their underlying physics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.36363636363636365,0,0,0,0,0,0,0.09090909090909091,0,0,0,0,0,0.5454545454545454,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Anomalous Magnetoresistance due to Longitudinal Spin Fluctuations in a Jeff = 1/2 Mott Semiconductor|Lin Hao,Zhentao Wang,Junyi Yang,D. Meyers,Joshua Sanchez,Gilberto Fabbris,Yongseong Choi,Jong-Woo Kim,Daniel Haskel,Philip J. Ryan,Kipton Barros,Jiun-Haw Chu,M. P. M. Dean,Cristian D. Batista,Jian Liu###
(341295, 341295)
 As a hallmark of electronic correlation, spin-charge interplay underlies manyemergent phenomena in doped Mott insulators, such as high-temperaturesuperconductivity, whereas the half-filled parent state is usuallyelectronically frozen with an antiferromagnetic order that resists externalcontrol.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrIrO3/SrTiO3
###Anomalous Magnetoresistance due to Longitudinal Spin Fluctuations in a Jeff = 1/2 Mott Semiconductor|Lin Hao,Zhentao Wang,Junyi Yang,D. Meyers,Joshua Sanchez,Gilberto Fabbris,Yongseong Choi,Jong-Woo Kim,Daniel Haskel,Philip J. Ryan,Kipton Barros,Jiun-Haw Chu,M. P. M. Dean,Cristian D. Batista,Jian Liu###
(341439, 341447)
 We report on the observation of a new positive magnetoresistance thatprobes the staggered susceptibility of a pseudospin-half square-lattice Mottinsulator built as an artificial SrIrO3/SrTiO3 superlattice.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

N
###Anomalous Magnetoresistance due to Longitudinal Spin Fluctuations in a Jeff = 1/2 Mott Semiconductor|Lin Hao,Zhentao Wang,Junyi Yang,D. Meyers,Joshua Sanchez,Gilberto Fabbris,Yongseong Choi,Jong-Woo Kim,Daniel Haskel,Philip J. Ryan,Kipton Barros,Jiun-Haw Chu,M. P. M. Dean,Cristian D. Batista,Jian Liu###
(341482, 341482)
 Its size isparticularly large in the high-temperature insulating paramagnetic phase nearthe Neel transition.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BCS
###Anomalous Magnetoresistance due to Longitudinal Spin Fluctuations in a Jeff = 1/2 Mott Semiconductor|Lin Hao,Zhentao Wang,Junyi Yang,D. Meyers,Joshua Sanchez,Gilberto Fabbris,Yongseong Choi,Jong-Woo Kim,Daniel Haskel,Philip J. Ryan,Kipton Barros,Jiun-Haw Chu,M. P. M. Dean,Cristian D. Batista,Jian Liu###
(341612, 341614)
 Our results demonstratea magnetic control of the binding energy of the fluctuating particle-hole pairsin the Slater-Mott crossover regime analogous to the BCS-to-Bose-Einsteincondensation crossover of ultracold-superfluids.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

U
###Giant unidirectional magnetoresistance in topological insulator -- ferromagnetic semiconductor heterostructures|Nguyen Huynh Duy Khang,Pham Nam Hai###
(341671, 341671)
 The unidirectional magnetoresistance (UMR) is one of the most complexspin-dependent transport phenomena in ferromagnet/non-magnet bilayers, whichinvolves spin injection and accumulation due to the spin Hall effect (SHE) orRashba-Edelstein effect (REE), spin-dependent scattering, and magnon scatteringat the interface or in the bulk of the ferromagnet.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[163.0, -5, ',', 1],[245.0, 1.1, '%', 3]

SH
###Giant unidirectional magnetoresistance in topological insulator -- ferromagnetic semiconductor heterostructures|Nguyen Huynh Duy Khang,Pham Nam Hai###
(341734, 341735)
 The unidirectional magnetoresistance (UMR) is one of the most complexspin-dependent transport phenomena in ferromagnet/non-magnet bilayers, whichinvolves spin injection and accumulation due to the spin Hall effect (SHE) orRashba-Edelstein effect (REE), spin-dependent scattering, and magnon scatteringat the interface or in the bulk of the ferromagnet.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, -5, ',', 1],[181.0, 1.1, '%', 3]

U
###Giant unidirectional magnetoresistance in topological insulator -- ferromagnetic semiconductor heterostructures|Nguyen Huynh Duy Khang,Pham Nam Hai###
(341792, 341792)
 While UMR in metallicbilayers has been studied extensively in very recent years, its magnitude is assmall as 10-5, which is too small for practical applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[42.0, -5, ',', 0],[124.0, 1.1, '%', 2]

U
###Giant unidirectional magnetoresistance in topological insulator -- ferromagnetic semiconductor heterostructures|Nguyen Huynh Duy Khang,Pham Nam Hai###
(341865, 341865)
 Here, wedemonstrate a giant UMR effect in a heterostructure of BiSb topologicalinsulator -- GaMnAs ferromagnetic semiconductor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[31.0, -5, ',', 1],[51.0, 1.1, '%', 1]

BiSb
###Giant unidirectional magnetoresistance in topological insulator -- ferromagnetic semiconductor heterostructures|Nguyen Huynh Duy Khang,Pham Nam Hai###
(341879, 341880)
 Here, wedemonstrate a giant UMR effect in a heterostructure of BiSb topologicalinsulator -- GaMnAs ferromagnetic semiconductor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, -5, ',', 1],[36.0, 1.1, '%', 1]

GaMnAs
###Giant unidirectional magnetoresistance in topological insulator -- ferromagnetic semiconductor heterostructures|Nguyen Huynh Duy Khang,Pham Nam Hai###
(341890, 341892)
 Here, wedemonstrate a giant UMR effect in a heterostructure of BiSb topologicalinsulator -- GaMnAs ferromagnetic semiconductor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, -5, ',', 1],[24.0, 1.1, '%', 1]

U
###Giant unidirectional magnetoresistance in topological insulator -- ferromagnetic semiconductor heterostructures|Nguyen Huynh Duy Khang,Pham Nam Hai###
(341907, 341907)
 We obtained a large UMR ratioof 1.1%, and found that this giant UMR is governed not by the giantmagnetoresistance (GMR)-like spin-dependent scattering, but by magnonemission/absorption and strong spin-disorder scattering in the GaMnAs layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[73.0, -5, ',', 2],[9.0, 1.1, '%', 0]

U
###Giant unidirectional magnetoresistance in topological insulator -- ferromagnetic semiconductor heterostructures|Nguyen Huynh Duy Khang,Pham Nam Hai###
(341930, 341930)
 We obtained a large UMR ratioof 1.1%, and found that this giant UMR is governed not by the giantmagnetoresistance (GMR)-like spin-dependent scattering, but by magnonemission/absorption and strong spin-disorder scattering in the GaMnAs layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[96.0, -5, ',', 2],[14.0, 1.1, '%', 0]

GaMnAs
###Giant unidirectional magnetoresistance in topological insulator -- ferromagnetic semiconductor heterostructures|Nguyen Huynh Duy Khang,Pham Nam Hai###
(341989, 341991)
 We obtained a large UMR ratioof 1.1%, and found that this giant UMR is governed not by the giantmagnetoresistance (GMR)-like spin-dependent scattering, but by magnonemission/absorption and strong spin-disorder scattering in the GaMnAs layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, -5, ',', 2],[73.0, 1.1, '%', 0]

U
###Giant unidirectional magnetoresistance in topological insulator -- ferromagnetic semiconductor heterostructures|Nguyen Huynh Duy Khang,Pham Nam Hai###
(342017, 342017)
Our results provide new insight into the complex physics of UMR, as well as astrategy for enhancing its magnitude for device applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[183.0, -5, ',', 3],[101.0, 1.1, '%', 1]

SrRuO3
###Atomic Origin of Spin-Valve Magnetoresistance at the SrRuO3 Grain Boundary|Xujing Li,Li Yin,Zhengxun Lai,Mei Wu,Yu Sheng,Lei Zhang,Yuanwei Sun,Shulin Chen,Xiaomei Li,Jingmin Zhang,Yuehui Li,Kaihui Liu,Kaiyou Wang,Dapeng Yu,Xuedong Bai,Wenbo Mi,Peng Gao###
(342072, 342075)
Atomic Origin of Spin-Valve Magnetoresistance at the SrRuO3 Grain Boundary.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrRuO3
###Atomic Origin of Spin-Valve Magnetoresistance at the SrRuO3 Grain Boundary|Xujing Li,Li Yin,Zhengxun Lai,Mei Wu,Yu Sheng,Lei Zhang,Yuanwei Sun,Shulin Chen,Xiaomei Li,Jingmin Zhang,Yuehui Li,Kaihui Liu,Kaiyou Wang,Dapeng Yu,Xuedong Bai,Wenbo Mi,Peng Gao###
(342245, 342248)
 Here, we fabricate a 36.8deg SrRuO3 grain boundary ofwhich the transport measurements show a spin-valve magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFeB/W/CoFeB
###Spin-torque memristors based on perpendicular magnetic tunnel junctions with a hybrid chiral texture|Xueying Zhang,Wenlong Cai,Mengxing Wang,Kaihua Cao,Tianrui Zhang,Houyi Cheng,Shaoxin Li,Daoqian Zhu,Weisheng Zhao###
(342618, 342626)
 Here, we experimentally demonstrate a nanoscale spin-torquememristor based on a perpendicular-anisotropy magnetic tunnel junction with aCoFeB/W/CoFeB composite free layer structure.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[142.0, 2009, ',', 2],[24.0, 200, '%', 1]

W
###Spin-torque memristors based on perpendicular magnetic tunnel junctions with a hybrid chiral texture|Xueying Zhang,Wenlong Cai,Mengxing Wang,Kaihua Cao,Tianrui Zhang,Houyi Cheng,Shaoxin Li,Daoqian Zhu,Weisheng Zhao###
(342703, 342703)
 Memristive states are maintained by robust domain wallpinning around clusters of W atoms, where nanoscale vertical chiral spintextures could be formed through the competition between opposingDzyaloshinskii-Moriya interactions and the fluctuating interlayer couplingcaused by the Ruderman-Kittel-Kasuya-Yosida interaction between the two CoFeBfree layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[227.0, 2009, ',', 4],[53.0, 200, '%', 1]

CoFeB
###Spin-torque memristors based on perpendicular magnetic tunnel junctions with a hybrid chiral texture|Xueying Zhang,Wenlong Cai,Mengxing Wang,Kaihua Cao,Tianrui Zhang,Houyi Cheng,Shaoxin Li,Daoqian Zhu,Weisheng Zhao###
(342777, 342779)
 Memristive states are maintained by robust domain wallpinning around clusters of W atoms, where nanoscale vertical chiral spintextures could be formed through the competition between opposingDzyaloshinskii-Moriya interactions and the fluctuating interlayer couplingcaused by the Ruderman-Kittel-Kasuya-Yosida interaction between the two CoFeBfree layers.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[301.0, 2009, ',', 4],[127.0, 200, '%', 1]

B
###Observation of Yamaji magic angles in bismuth surfaces|Tito Huber,Scott Johnson,Leonid Konopko,Albina Nikolaeva###
(342985, 342985)
 Here we report thatangle dependent magnetoresistance measurements of small diameter single-crystalbismuth nanowires exhibit the sequence of magnetoresistance (MR) peaks atYamaji magic angles and a peak for B//bilayer, indicating coherent transportbetween layers, and showing that the Fermi surface of surface electrons is awarped cylinder.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Extremely large linear magnetoresistance in Antimony crystal|Mukesh Kumar Dasoundhi,Indu Rajput,Devendra Kumar,Archana Lakhani###
(343134, 343134)
 In this letter we report the observation of extremely large non-saturatinglinear magnetoresistance (MR) in Antimony(Sb) crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 43000, '%', 1],[65.0, 2, 'K', 1],[77.0, 70, '%', 1],[100.0, 9, 'T', 1]

(Sb)
###Extremely large linear magnetoresistance in Antimony crystal|Mukesh Kumar Dasoundhi,Indu Rajput,Devendra Kumar,Archana Lakhani###
(343171, 343173)
 In this letter we report the observation of extremely large non-saturatinglinear magnetoresistance (MR) in Antimony(Sb) crystal.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 43000, '%', 1],[26.0, 2, 'K', 1],[38.0, 70, '%', 1],[61.0, 9, 'T', 1]

B
###Extremely large linear magnetoresistance in Antimony crystal|Mukesh Kumar Dasoundhi,Indu Rajput,Devendra Kumar,Archana Lakhani###
(343311, 343311)
 The respective scaling of MR and crossover field (Bc) fromquadratic to linear MR with mobility and inverse of mobility describes theclassical origin of large linear MR in this crystal as suggested by Parish andLittlewood (PL) model for disordered systems.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 43000, '%', 2],[112.0, 2, 'K', 2],[100.0, 70, '%', 2],[77.0, 9, 'T', 2]

P
###Extremely large linear magnetoresistance in Antimony crystal|Mukesh Kumar Dasoundhi,Indu Rajput,Devendra Kumar,Archana Lakhani###
(343377, 343377)
 The respective scaling of MR and crossover field (Bc) fromquadratic to linear MR with mobility and inverse of mobility describes theclassical origin of large linear MR in this crystal as suggested by Parish andLittlewood (PL) model for disordered systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[182.0, 43000, '%', 2],[178.0, 2, 'K', 2],[166.0, 70, '%', 2],[143.0, 9, 'T', 2]

CuMnAs
###Electrical transport properties of bulk tetragonal CuMnAs|J Volny,D. Wagenknecht,J Zelezny,P Harcuba,E Duverger-Nedellec,R H Colman,J Kudrnovsky,I Turek,K Uhlirova,K Vyborny###
(343410, 343412)
Electrical transport properties of bulk tetragonal CuMnAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[187.0, 0.12, '%', 4]

CuMnAs
###Electrical transport properties of bulk tetragonal CuMnAs|J Volny,D. Wagenknecht,J Zelezny,P Harcuba,E Duverger-Nedellec,R H Colman,J Kudrnovsky,I Turek,K Uhlirova,K Vyborny###
(343442, 343444)
 Temperature-dependent resistivity and magnetoresistance are measured in bulktetragonal phase of antiferromagnetic CuMnAs and the latter is found to beanisotropic both due to structure and magnetic order.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 0.12, '%', 3]

Mn
###Electrical transport properties of bulk tetragonal CuMnAs|J Volny,D. Wagenknecht,J Zelezny,P Harcuba,E Duverger-Nedellec,R H Colman,J Kudrnovsky,I Turek,K Uhlirova,K Vyborny###
(343700, 343700)
 Regarding the anisotropicmagnetoresistance (AMR) which reaches a modest magnitude of 0.12%, wephenomenologically employ the Stoner-Wohlfarth model to identifytemperature-dependent magnetic anisotropy of our samples and conclude that thefield-dependence of AMR is more similar to that of antiferromagnets thanferromagnets, suggesting that the origin of AMR is not related to isolated Mnmagnetic moments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 0.12, '%', 0]

SrIrO3
###Anisotropic magnetoresistance in spin-orbit semimetal SrIrO3|Dirk J. Groenendijk,Nicola Manca,Joeri de Bruijckere,Ana Mafalda R. V. L. Monteiro,Rocco Gaudenzi,Herre S. J. van der Zant,Andrea D. Caviglia###
(343728, 343731)
Anisotropic magnetoresistance in spin-orbit semimetal SrIrO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrIrO3
###Anisotropic magnetoresistance in spin-orbit semimetal SrIrO3|Dirk J. Groenendijk,Nicola Manca,Joeri de Bruijckere,Ana Mafalda R. V. L. Monteiro,Rocco Gaudenzi,Herre S. J. van der Zant,Andrea D. Caviglia###
(343734, 343737)
 SrIrO3, the three-dimensional member of the Ruddlesden-Popper iridates, is aparamagnetic semimetal characterised by a the delicate interplay betweenspin-orbit coupling and Coulomb repulsion.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Anisotropic magnetoresistance in spin-orbit semimetal SrIrO3|Dirk J. Groenendijk,Nicola Manca,Joeri de Bruijckere,Ana Mafalda R. V. L. Monteiro,Rocco Gaudenzi,Herre S. J. van der Zant,Andrea D. Caviglia###
(343796, 343796)
 In this work, we study theanisotropic magnetoresistance (AMR) of SrIrO3 thin films, which is closelylinked to spin-orbit coupling and probes correlations between electronictransport, magnetic order and orbital states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrIrO3
###Anisotropic magnetoresistance in spin-orbit semimetal SrIrO3|Dirk J. Groenendijk,Nicola Manca,Joeri de Bruijckere,Ana Mafalda R. V. L. Monteiro,Rocco Gaudenzi,Herre S. J. van der Zant,Andrea D. Caviglia###
(343822, 343825)
 In this work, we study theanisotropic magnetoresistance (AMR) of SrIrO3 thin films, which is closelylinked to spin-orbit coupling and probes correlations between electronictransport, magnetic order and orbital states.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrIrO3
###Anisotropic magnetoresistance in spin-orbit semimetal SrIrO3|Dirk J. Groenendijk,Nicola Manca,Joeri de Bruijckere,Ana Mafalda R. V. L. Monteiro,Rocco Gaudenzi,Herre S. J. van der Zant,Andrea D. Caviglia###
(343996, 343999)
 We show that this AMRcomponent is of magnetocrystalline origin, and attribute the observedtransition to a field-induced magnetic state in SrIrO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LuSb
###Controlling magnetoresistance by tuning semimetallicity through dimensional confinement and heteroepitaxy|Shouvik Chatterjee,Shoaib Khalid,Hadass S. Inbar,Taozhi Guo,Yu-Hao Chang,Elliot Young,Alexei V. Fedorov,Dan Read,Anderson Janotti,Christopher J. Palmstrøm###
(344084, 344085)
 Here, we extend this concept tosemimetals where, utilizing LuSb as a model system, we show that quantumconfinement lifts carrier compensation and differentially affects the mobilityof the electron and hole-like carriers resulting in a strong modification inits large, non-saturating magnetoresistance behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(LuSb)
###Controlling magnetoresistance by tuning semimetallicity through dimensional confinement and heteroepitaxy|Shouvik Chatterjee,Shoaib Khalid,Hadass S. Inbar,Taozhi Guo,Yu-Hao Chang,Elliot Young,Alexei V. Fedorov,Dan Read,Anderson Janotti,Christopher J. Palmstrøm###
(344184, 344187)
 Bonding mismatch at theheteroepitaxial interface of a semimetal (LuSb) and a semiconductor (GaSb)leads to the emergence of a novel, two-dimensional, interfacial hole gas and isaccompanied by a charge transfer across the interface that provides anotheravenue to modify the electronic structure and magnetotransport properties inthe ultra-thin limit.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(GaSb)
###Controlling magnetoresistance by tuning semimetallicity through dimensional confinement and heteroepitaxy|Shouvik Chatterjee,Shoaib Khalid,Hadass S. Inbar,Taozhi Guo,Yu-Hao Chang,Elliot Young,Alexei V. Fedorov,Dan Read,Anderson Janotti,Christopher J. Palmstrøm###
(344195, 344198)
 Bonding mismatch at theheteroepitaxial interface of a semimetal (LuSb) and a semiconductor (GaSb)leads to the emergence of a novel, two-dimensional, interfacial hole gas and isaccompanied by a charge transfer across the interface that provides anotheravenue to modify the electronic structure and magnetotransport properties inthe ultra-thin limit.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt/YI
###Spin Hall magnetoresistance in Pt/YIG bilayers via varying magnon excitation|Q. B. Liu,K. K. Meng,S. Q. Zheng,Y. C. Wu,J. Miao,X. G. Xu,Y. Jiang###
(344382, 344385)
Spin Hall magnetoresistance in Pt/YIG<missing VAR> bilayers via varying magnon excitation.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[167.0, 300, 'K', 3]

S
###Spin Hall magnetoresistance in Pt/YIG bilayers via varying magnon excitation|Q. B. Liu,K. K. Meng,S. Q. Zheng,Y. C. Wu,J. Miao,X. G. Xu,Y. Jiang###
(344406, 344406)
 Spin Hall magnetoresistance (SMR) and magnon excitation magnetoresistance(MMR) that all generate via the spin Hall effect and inverse spin Hall effectin a nonmagnetic material are always related to each other.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 300, 'K', 2]

S
###Spin Hall magnetoresistance in Pt/YIG bilayers via varying magnon excitation|Q. B. Liu,K. K. Meng,S. Q. Zheng,Y. C. Wu,J. Miao,X. G. Xu,Y. Jiang###
(344490, 344490)
 However, theinfluence of magnon excitation for SMR is often overlooked due to thenegligible MMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 300, 'K', 1]

S
###Spin Hall magnetoresistance in Pt/YIG bilayers via varying magnon excitation|Q. B. Liu,K. K. Meng,S. Q. Zheng,Y. C. Wu,J. Miao,X. G. Xu,Y. Jiang###
(344523, 344523)
 Here, we investigate the SMR in Pt/Y3Fe5O12 (YIG) bilayers from5 to 300K, in which the YIG<missing VAR> are treated after Ar-ion milling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 300, 'K', 0]

Pt/Y3Fe5O12
###Spin Hall magnetoresistance in Pt/YIG bilayers via varying magnon excitation|Q. B. Liu,K. K. Meng,S. Q. Zheng,Y. C. Wu,J. Miao,X. G. Xu,Y. Jiang###
(344529, 344536)
 Here, we investigate the SMR in Pt/Y3Fe5O12 (YIG) bilayers from5 to 300K, in which the YIG<missing VAR> are treated after Ar-ion milling.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[16.0, 300, 'K', 0]

YI
###Spin Hall magnetoresistance in Pt/YIG bilayers via varying magnon excitation|Q. B. Liu,K. K. Meng,S. Q. Zheng,Y. C. Wu,J. Miao,X. G. Xu,Y. Jiang###
(344539, 344540)
 Here, we investigate the SMR in Pt/Y3Fe5O12 (YIG) bilayers from5 to 300K, in which the YIG<missing VAR> are treated after Ar-ion milling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 300, 'K', 0]

YI
###Spin Hall magnetoresistance in Pt/YIG bilayers via varying magnon excitation|Q. B. Liu,K. K. Meng,S. Q. Zheng,Y. C. Wu,J. Miao,X. G. Xu,Y. Jiang###
(344561, 344562)
 Here, we investigate the SMR in Pt/Y3Fe5O12 (YIG) bilayers from5 to 300K, in which the YIG<missing VAR> are treated after Ar-ion milling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 300, 'K', 0]

Ar
###Spin Hall magnetoresistance in Pt/YIG bilayers via varying magnon excitation|Q. B. Liu,K. K. Meng,S. Q. Zheng,Y. C. Wu,J. Miao,X. G. Xu,Y. Jiang###
(344571, 344571)
 Here, we investigate the SMR in Pt/Y3Fe5O12 (YIG) bilayers from5 to 300K, in which the YIG<missing VAR> are treated after Ar-ion milling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 300, 'K', 0]

S
###Spin Hall magnetoresistance in Pt/YIG bilayers via varying magnon excitation|Q. B. Liu,K. K. Meng,S. Q. Zheng,Y. C. Wu,J. Miao,X. G. Xu,Y. Jiang###
(344580, 344580)
 The SMR in thetreated device is smaller than in the non-treated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 300, 'K', 1]

Pt/YI
###Spin Hall magnetoresistance in Pt/YIG bilayers via varying magnon excitation|Q. B. Liu,K. K. Meng,S. Q. Zheng,Y. C. Wu,J. Miao,X. G. Xu,Y. Jiang###
(344651, 344654)
 According to theoreticalsimulation, we attribute this phenomenon to the reduction of the interfacialspin-mixing conductance at the treated Pt/YIG<missing VAR> interface induced by the magnonsuppression.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[99.0, 300, 'K', 2]

S
###Spin Hall magnetoresistance in Pt/YIG bilayers via varying magnon excitation|Q. B. Liu,K. K. Meng,S. Q. Zheng,Y. C. Wu,J. Miao,X. G. Xu,Y. Jiang###
(344685, 344685)
 Our experimental results point out that the SMR and the MMR areinter-connected, and the former could be modulated via magnon excitation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 300, 'K', 3]

Si
###Large spin-Hall effect in Si at room temperature|Paul C. Lou,Anand Katailiha,Ravindra G. Bhardwaj,Tonmoy Bhowmick,W. P. Beyermann,Roger K. Lake,Sandeep Kumar###
(344771, 344771)
Large spin-Hall effect in Si at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Large spin-Hall effect in Si at room temperature|Paul C. Lou,Anand Katailiha,Ravindra G. Bhardwaj,Tonmoy Bhowmick,W. P. Beyermann,Roger K. Lake,Sandeep Kumar###
(344818, 344818)
 Silicons<missing VAR> weak intrinsic spin-orbit coupling and centrosymmetric crystalstructure are a critical bottleneck to the development of Si spintronics,because they lead to an insignificant spin-Hall effect (spin currentgeneration) and inverse spin-Hall effect (spin current detection).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Large spin-Hall effect in Si at room temperature|Paul C. Lou,Anand Katailiha,Ravindra G. Bhardwaj,Tonmoy Bhowmick,W. P. Beyermann,Roger K. Lake,Sandeep Kumar###
(344920, 344920)
 Here, weundertake current, magnetic field, crystallography dependent magnetoresistanceand magneto thermal transport measurements to study the spin transport behaviorin freestanding Si thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Large spin-Hall effect in Si at room temperature|Paul C. Lou,Anand Katailiha,Ravindra G. Bhardwaj,Tonmoy Bhowmick,W. P. Beyermann,Roger K. Lake,Sandeep Kumar###
(344948, 344948)
 We observe a large spin-Hall magnetoresistancein both p<missing VAR>-Si and n<missing VAR>-Si at room temperature and it is an order of magnitudelarger than that of Pt.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Large spin-Hall effect in Si at room temperature|Paul C. Lou,Anand Katailiha,Ravindra G. Bhardwaj,Tonmoy Bhowmick,W. P. Beyermann,Roger K. Lake,Sandeep Kumar###
(344954, 344954)
 We observe a large spin-Hall magnetoresistancein both p<missing VAR>-Si and n<missing VAR>-Si at room temperature and it is an order of magnitudelarger than that of Pt.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Large spin-Hall effect in Si at room temperature|Paul C. Lou,Anand Katailiha,Ravindra G. Bhardwaj,Tonmoy Bhowmick,W. P. Beyermann,Roger K. Lake,Sandeep Kumar###
(344985, 344985)
 We observe a large spin-Hall magnetoresistancein both p<missing VAR>-Si and n<missing VAR>-Si at room temperature and it is an order of magnitudelarger than that of Pt.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Large spin-Hall effect in Si at room temperature|Paul C. Lou,Anand Katailiha,Ravindra G. Bhardwaj,Tonmoy Bhowmick,W. P. Beyermann,Roger K. Lake,Sandeep Kumar###
(345070, 345070)
 Themacroscopic origin of the spin-phonon coupling can be large strain gradientsthat can exist in the freestanding Si films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Tunable giant magnetoresistance in a single-molecule junction|Kai Yang,Hui Chen,Thomas Pope,Yibin Hu,Liwei Liu,Dongfei Wang,Lei Tao,Wende Xiao,Xiangmin Fei,Yu-Yang Zhang,Hong-Gang Luo,Shixuan Du,Tao Xiang,Werner A. Hofer,Hong-Jun Gao###
(345191, 345191)
 In magnetic moleculardevices, the spin degree-of-freedom can be used to this end since the magneticproperties of the magnetic ion centers fundamentally impact the transportthrough the molecules.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 93, '%', 1]

I
###Resonant Tunneling Anisotropic Magnetoresistance Induced by Magnetic Proximity|Chenghao Shen,Timothy Leeney,Alex Matos-Abiague,Benedikt Scharf,Jong E. Han,Igor Zutic###
(345784, 345784)
 Without resonant behavior in the topological surface statesof a proximitized three-dimensional topological insulator (T<missing VAR>I), TAMRmeasurements can readily distinguish them from often misinterpreted trivialRashba-like states inherent to many T<missing VAR>Is.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnSb2Te4
###Anomalous Hall Effect in Layered Ferrimagnet MnSb2Te4|Gang Shi,Mingjie Zhang,Dayu Yan,Honglei Feng,Meng Yang,Youguo Shi,Yongqing Li###
(345849, 345853)
Anomalous Hall Effect in Layered Ferrimagnet MnSb2Te4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 4, 'K', 3]

MnSb2Te4
###Anomalous Hall Effect in Layered Ferrimagnet MnSb2Te4|Gang Shi,Mingjie Zhang,Dayu Yan,Honglei Feng,Meng Yang,Youguo Shi,Yongqing Li###
(345874, 345878)
 We report on low-temperature electron transport properties of MnSb2Te4, acandidate of ferrimagnetic Weyl semimetal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 4, 'K', 2]

At
###Anomalous Hall Effect in Layered Ferrimagnet MnSb2Te4|Gang Shi,Mingjie Zhang,Dayu Yan,Honglei Feng,Meng Yang,Youguo Shi,Yongqing Li###
(345952, 345952)
 At temperaturesbelow 4 K, a lnT<missing VAR>-type upturn appears in the temperature dependence oflongitudinal resistance, which can be attributed to the electron-electroninteraction (EEI), since the weak localization can be excluded by thetemperature dependence of magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 4, 'K', 0]

I
###Anomalous Hall Effect in Layered Ferrimagnet MnSb2Te4|Gang Shi,Mingjie Zhang,Dayu Yan,Honglei Feng,Meng Yang,Youguo Shi,Yongqing Li###
(346010, 346010)
 At temperaturesbelow 4 K, a lnT<missing VAR>-type upturn appears in the temperature dependence oflongitudinal resistance, which can be attributed to the electron-electroninteraction (EEI), since the weak localization can be excluded by thetemperature dependence of magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 4, 'K', 0]

MnSb2Te4
###Anomalous Hall Effect in Layered Ferrimagnet MnSb2Te4|Gang Shi,Mingjie Zhang,Dayu Yan,Honglei Feng,Meng Yang,Youguo Shi,Yongqing Li###
(346106, 346110)
 Our workdemonstrates that MnSb2Te4 microflakes provide an ideal system to test thetheory of EEI correction to the anomalous Hall effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 4, 'K', 2]

I
###Anomalous Hall Effect in Layered Ferrimagnet MnSb2Te4|Gang Shi,Mingjie Zhang,Dayu Yan,Honglei Feng,Meng Yang,Youguo Shi,Yongqing Li###
(346135, 346135)
 Our workdemonstrates that MnSb2Te4 microflakes provide an ideal system to test thetheory of EEI correction to the anomalous Hall effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[177.0, 4, 'K', 2]

W
###Modulation of anisotropic magnetoresistance by anomalous Hall signal and its application to real-time domain wall velocity measurement|Ramesh Chandra Bhatt,Yo-Yu Cheng,Lin-Xiu Ye,Ngo Trong Hai,Jong-Ching Wu,Te-ho Wu###
(346244, 346244)
 We present here a way to modulate the anisotropic magnetoresistance (AMR) byanomalous Hall signal and thus measure the domain wall (D<missing VAR>W) motion velocity atnear-coercivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Modulation of anisotropic magnetoresistance by anomalous Hall signal and its application to real-time domain wall velocity measurement|Ramesh Chandra Bhatt,Yo-Yu Cheng,Lin-Xiu Ye,Ngo Trong Hai,Jong-Ching Wu,Te-ho Wu###
(346313, 346313)
 We observed asymmetric Rxx peaks thatappear at the D<missing VAR>W pinning fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Modulation of anisotropic magnetoresistance by anomalous Hall signal and its application to real-time domain wall velocity measurement|Ramesh Chandra Bhatt,Yo-Yu Cheng,Lin-Xiu Ye,Ngo Trong Hai,Jong-Ching Wu,Te-ho Wu###
(346356, 346356)
 Inthe proposed method, using the magnetization relaxation, the real-time D<missing VAR>Wvelocity measurement is much easier in comparison to the other microscopymethods.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Modulation of anisotropic magnetoresistance by anomalous Hall signal and its application to real-time domain wall velocity measurement|Ramesh Chandra Bhatt,Yo-Yu Cheng,Lin-Xiu Ye,Ngo Trong Hai,Jong-Ching Wu,Te-ho Wu###
(346382, 346382)
 Inthe proposed method, using the magnetization relaxation, the real-time D<missing VAR>Wvelocity measurement is much easier in comparison to the other microscopymethods.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Modulation of anisotropic magnetoresistance by anomalous Hall signal and its application to real-time domain wall velocity measurement|Ramesh Chandra Bhatt,Yo-Yu Cheng,Lin-Xiu Ye,Ngo Trong Hai,Jong-Ching Wu,Te-ho Wu###
(346444, 346444)
 Moreover, the additional signal from anomalous Hall voltage makes thistechnique simpler and sensitive for D<missing VAR>W velocity measurements, which can beuseful for various spintronic sensing applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nd
###Nonconventional magnetic phenomena in neodymium thin film|G. Yumnam,J. Guo,Y. Chen,V. Lauter,D. K. Singh###
(346586, 346586)
 We report synergistic study of Nd thin film usingexperimental and theoretical techniques of polarized neutron reflectometry,magnetoresistance measurement and density functional theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 1.2, 'T', 3],[148.0, 18, 'K', 3]

Nd
###Nonconventional magnetic phenomena in neodymium thin film|G. Yumnam,J. Guo,Y. Chen,V. Lauter,D. K. Singh###
(346630, 346630)
 Unlike bulk Nd,thin film specimen is a very poor electrical conductor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 1.2, 'T', 2],[104.0, 18, 'K', 2]

H
###Nonconventional magnetic phenomena in neodymium thin film|G. Yumnam,J. Guo,Y. Chen,V. Lauter,D. K. Singh###
(346702, 346702)
However, moderate inplane field application of H  1.2 T tends to induce weakmagnetism in the system at low temperature of T<missing VAR> < 18 K, which coincideswith an unusual cross-over behavior in magnetoresistance.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 1.2, 'T', 0],[32.0, 18, 'K', 0]

Nd
###Nonconventional magnetic phenomena in neodymium thin film|G. Yumnam,J. Guo,Y. Chen,V. Lauter,D. K. Singh###
(346780, 346780)
 The study providesimportant insight in the physical characteristics of Nd thin film that areatypical for a magnetic system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 1.2, 'T', 1],[46.0, 18, 'K', 1]

Mn
###Multifunctional behavior of Mn-site doped antiferromagnetic Mn$_5$Si$_3$ alloys|S. C. Das,S. Pramanick,S. Chatterjee###
(346816, 346816)
Multifunctional behavior of Mn-site doped antiferromagnetic Mn5Si3 alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 0, ',', 1],[91.0, 0.05, ',', 1],[93.0, 0.1, 'and', 1]

Mn5Si3
###Multifunctional behavior of Mn-site doped antiferromagnetic Mn$_5$Si$_3$ alloys|S. C. Das,S. Pramanick,S. Chatterjee###
(346824, 346827)
Multifunctional behavior of Mn-site doped antiferromagnetic Mn5Si3 alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.375,0,0,0,0,0,0,0,0,0,0,0.625,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 0, ',', 1],[80.0, 0.05, ',', 1],[82.0, 0.1, 'and', 1]

Ni
###Multifunctional behavior of Mn-site doped antiferromagnetic Mn$_5$Si$_3$ alloys|S. C. Das,S. Pramanick,S. Chatterjee###
(346859, 346859)
 Present work reports a detailed investigation on the magnetoresistance andmagnetocaloric behavior of Ni and Cr-doped Mn5Si3 alloys with generalformula Mn5-xAx<missing VAR>Si3 (where A  Ni/Cr; x<missing VAR>  0, 0.05, 0.1 and 0.2).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 0, ',', 0],[48.0, 0.05, ',', 0],[50.0, 0.1, 'and', 0]

Cr
###Multifunctional behavior of Mn-site doped antiferromagnetic Mn$_5$Si$_3$ alloys|S. C. Das,S. Pramanick,S. Chatterjee###
(346863, 346863)
 Present work reports a detailed investigation on the magnetoresistance andmagnetocaloric behavior of Ni and Cr-doped Mn5Si3 alloys with generalformula Mn5-xAx<missing VAR>Si3 (where A  Ni/Cr; x<missing VAR>  0, 0.05, 0.1 and 0.2).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 0, ',', 0],[44.0, 0.05, ',', 0],[46.0, 0.1, 'and', 0]

Mn5Si3
###Multifunctional behavior of Mn-site doped antiferromagnetic Mn$_5$Si$_3$ alloys|S. C. Das,S. Pramanick,S. Chatterjee###
(346867, 346870)
 Present work reports a detailed investigation on the magnetoresistance andmagnetocaloric behavior of Ni and Cr-doped Mn5Si3 alloys with generalformula Mn5-xAx<missing VAR>Si3 (where A  Ni/Cr; x<missing VAR>  0, 0.05, 0.1 and 0.2).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.375,0,0,0,0,0,0,0,0,0,0,0.625,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 0, ',', 0],[37.0, 0.05, ',', 0],[39.0, 0.1, 'and', 0]

Mn5-x
###Multifunctional behavior of Mn-site doped antiferromagnetic Mn$_5$Si$_3$ alloys|S. C. Das,S. Pramanick,S. Chatterjee###
(346881, 346884)
 Present work reports a detailed investigation on the magnetoresistance andmagnetocaloric behavior of Ni and Cr-doped Mn5Si3 alloys with generalformula Mn5-xAx<missing VAR>Si3 (where A  Ni/Cr; x<missing VAR>  0, 0.05, 0.1 and 0.2).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[20.0, 0, ',', 0],[23.0, 0.05, ',', 0],[25.0, 0.1, 'and', 0]

Si3
###Multifunctional behavior of Mn-site doped antiferromagnetic Mn$_5$Si$_3$ alloys|S. C. Das,S. Pramanick,S. Chatterjee###
(346887, 346888)
 Present work reports a detailed investigation on the magnetoresistance andmagnetocaloric behavior of Ni and Cr-doped Mn5Si3 alloys with generalformula Mn5-xAx<missing VAR>Si3 (where A  Ni/Cr; x<missing VAR>  0, 0.05, 0.1 and 0.2).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 0, ',', 0],[19.0, 0.05, ',', 0],[21.0, 0.1, 'and', 0]

Ni/Cr
###Multifunctional behavior of Mn-site doped antiferromagnetic Mn$_5$Si$_3$ alloys|S. C. Das,S. Pramanick,S. Chatterjee###
(346896, 346898)
 Present work reports a detailed investigation on the magnetoresistance andmagnetocaloric behavior of Ni and Cr-doped Mn5Si3 alloys with generalformula Mn5-xAx<missing VAR>Si3 (where A  Ni/Cr; x<missing VAR>  0, 0.05, 0.1 and 0.2).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[6.0, 0, ',', 0],[9.0, 0.05, ',', 0],[11.0, 0.1, 'and', 0]

Mn
###Multifunctional behavior of Mn-site doped antiferromagnetic Mn$_5$Si$_3$ alloys|S. C. Das,S. Pramanick,S. Chatterjee###
(346955, 346955)
 Doping at Mn-site, both by Ni and Cr, results in amonotonic decrease in MR values.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 0, ',', 2],[48.0, 0.05, ',', 2],[46.0, 0.1, 'and', 2]

Ni
###Multifunctional behavior of Mn-site doped antiferromagnetic Mn$_5$Si$_3$ alloys|S. C. Das,S. Pramanick,S. Chatterjee###
(346964, 346964)
 Doping at Mn-site, both by Ni and Cr, results in amonotonic decrease in MR values.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 0, ',', 2],[57.0, 0.05, ',', 2],[55.0, 0.1, 'and', 2]

Cr
###Multifunctional behavior of Mn-site doped antiferromagnetic Mn$_5$Si$_3$ alloys|S. C. Das,S. Pramanick,S. Chatterjee###
(346968, 346968)
 Doping at Mn-site, both by Ni and Cr, results in amonotonic decrease in MR values.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 0, ',', 2],[61.0, 0.05, ',', 2],[59.0, 0.1, 'and', 2]

(TaSe4)2I
###Magnetoresistance in quasi-one dimensional Weyl semimetal (TaSe$_4$)$_2$I|I. A. Cohn,S. G. Zybtsev,A. P. Orlov,S. V. Zaitsev-Zotov###
(347163, 347169)
Magnetoresistance in quasi-one dimensional Weyl semimetal (TaSe4)2I.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7272727272727273,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.09090909090909091,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Magnetoresistance in quasi-one dimensional Weyl semimetal (TaSe$_4$)$_2$I|I. A. Cohn,S. G. Zybtsev,A. P. Orlov,S. V. Zaitsev-Zotov###
(347214, 347214)
 Magnetic field effect on linear and nonlinear conductivity in aquasi-one-dimensional Weyl semimetal with a charge density wave (CD<missing VAR>W)(TaSe4)2I is studied.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Magnetoresistance in quasi-one dimensional Weyl semimetal (TaSe$_4$)$_2$I|I. A. Cohn,S. G. Zybtsev,A. P. Orlov,S. V. Zaitsev-Zotov###
(347216, 347216)
 Magnetic field effect on linear and nonlinear conductivity in aquasi-one-dimensional Weyl semimetal with a charge density wave (CD<missing VAR>W)(TaSe4)2I is studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(TaSe4)2I
###Magnetoresistance in quasi-one dimensional Weyl semimetal (TaSe$_4$)$_2$I|I. A. Cohn,S. G. Zybtsev,A. P. Orlov,S. V. Zaitsev-Zotov###
(347220, 347226)
 Magnetic field effect on linear and nonlinear conductivity in aquasi-one-dimensional Weyl semimetal with a charge density wave (CD<missing VAR>W)(TaSe4)2I is studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7272727272727273,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.09090909090909091,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Magnetoresistance in quasi-one dimensional Weyl semimetal (TaSe$_4$)$_2$I|I. A. Cohn,S. G. Zybtsev,A. P. Orlov,S. V. Zaitsev-Zotov###
(347248, 347248)
 Longitudinal magnetoresistance in all known regimesof CD<missing VAR>W motion (linear conduction, creep, sliding, Frohlichsuperconductivity) is small, positive and do not exceed a fraction of percent.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Magnetoresistance in quasi-one dimensional Weyl semimetal (TaSe$_4$)$_2$I|I. A. Cohn,S. G. Zybtsev,A. P. Orlov,S. V. Zaitsev-Zotov###
(347250, 347250)
 Longitudinal magnetoresistance in all known regimesof CD<missing VAR>W motion (linear conduction, creep, sliding, Frohlichsuperconductivity) is small, positive and do not exceed a fraction of percent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fr
###Magnetoresistance in quasi-one dimensional Weyl semimetal (TaSe$_4$)$_2$I|I. A. Cohn,S. G. Zybtsev,A. P. Orlov,S. V. Zaitsev-Zotov###
(347266, 347266)
 Longitudinal magnetoresistance in all known regimesof CD<missing VAR>W motion (linear conduction, creep, sliding, Frohlichsuperconductivity) is small, positive and do not exceed a fraction of percent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Magnetoresistance in quasi-one dimensional Weyl semimetal (TaSe$_4$)$_2$I|I. A. Cohn,S. G. Zybtsev,A. P. Orlov,S. V. Zaitsev-Zotov###
(347341, 347341)
 Similar magnetotransport measurements were performed in samples profiledby focused ion beams is such a way that motion of the CD<missing VAR>W in them isaccompanied by phase slip of the CD<missing VAR>W.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Magnetoresistance in quasi-one dimensional Weyl semimetal (TaSe$_4$)$_2$I|I. A. Cohn,S. G. Zybtsev,A. P. Orlov,S. V. Zaitsev-Zotov###
(347343, 347343)
 Similar magnetotransport measurements were performed in samples profiledby focused ion beams is such a way that motion of the CD<missing VAR>W in them isaccompanied by phase slip of the CD<missing VAR>W.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Magnetoresistance in quasi-one dimensional Weyl semimetal (TaSe$_4$)$_2$I|I. A. Cohn,S. G. Zybtsev,A. P. Orlov,S. V. Zaitsev-Zotov###
(347364, 347364)
 Similar magnetotransport measurements were performed in samples profiledby focused ion beams is such a way that motion of the CD<missing VAR>W in them isaccompanied by phase slip of the CD<missing VAR>W.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Magnetoresistance in quasi-one dimensional Weyl semimetal (TaSe$_4$)$_2$I|I. A. Cohn,S. G. Zybtsev,A. P. Orlov,S. V. Zaitsev-Zotov###
(347366, 347366)
 Similar magnetotransport measurements were performed in samples profiledby focused ion beams is such a way that motion of the CD<missing VAR>W in them isaccompanied by phase slip of the CD<missing VAR>W.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magnetoresistance in quasi-one dimensional Weyl semimetal (TaSe$_4$)$_2$I|I. A. Cohn,S. G. Zybtsev,A. P. Orlov,S. V. Zaitsev-Zotov###
(347369, 347369)
 In such samples, a peak-likenon-parabolic negative magnetoresistance is observed in relatively smallmagnetic fields B lesssim 4 T<missing VAR> in the nonlinear conduction regime in bothlongitudinal and transverse geometries.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Magnetoresistance in quasi-one dimensional Weyl semimetal (TaSe$_4$)$_2$I|I. A. Cohn,S. G. Zybtsev,A. P. Orlov,S. V. Zaitsev-Zotov###
(347406, 347406)
 In such samples, a peak-likenon-parabolic negative magnetoresistance is observed in relatively smallmagnetic fields B lesssim 4 T<missing VAR> in the nonlinear conduction regime in bothlongitudinal and transverse geometries.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Manifestations of classical size effect and electronic viscosity in the magnetoresistance of narrow two-dimensional conductors: Theory and experiment|O. E. Raichev,G. M. Gusev,A. D. Levin,A. K. Bakarov###
(347607, 347607)
 We develop a classical kinetic theory of magnetotransport of 2D electrons innarrow channels with partly diffusive boundary scattering and apply it todescription of magnetoresistance measured in the temperature interval 4.2-30 Kin long mesoscopic bars fabricated from high-purity GaAs quantum wellstructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 2, 'D', 0]

GaAs
###Manifestations of classical size effect and electronic viscosity in the magnetoresistance of narrow two-dimensional conductors: Theory and experiment|O. E. Raichev,G. M. Gusev,A. D. Levin,A. K. Bakarov###
(347626, 347627)
 We develop a classical kinetic theory of magnetotransport of 2D electrons innarrow channels with partly diffusive boundary scattering and apply it todescription of magnetoresistance measured in the temperature interval 4.2-30 Kin long mesoscopic bars fabricated from high-purity GaAs quantum wellstructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 2, 'D', 0]

In
###Manifestations of classical size effect and electronic viscosity in the magnetoresistance of narrow two-dimensional conductors: Theory and experiment|O. E. Raichev,G. M. Gusev,A. D. Levin,A. K. Bakarov###
(347704, 347704)
 In addition tothe features described previously, we also reveal a change in the slope of thefirst derivative of magnetoresistance when the cyclotron orbit diameter equalsto half of the channel width.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 2, 'D', 2]

In
###Giant Thermal Magnetoresistance Driven by Graphene Magnetoplasmon|Ming-Jian He,Hong Qi,Yan-Xiong Su,Ya-Tao Ren,Yi-Jun Zhao,Mauro Antezza###
(347887, 347887)
 In this work, we have predicted a giant thermal magnetoresistance for thethermal photon transport based on the tunable magnetoplasmon of graphene.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 4, 'Tesla', 2]

UZr2
###Magnetic, transport, and thermal properties of $δ$-phase UZr$_2$|Xiaxin Ding,Tiankai Yao,Lyuwen Fu,Zilong Hua,Jason Harp,Chris Marianetti,Madhab Neupane,Michael E. Manley,David Hurley,Krzysztof Gofryk###
(348206, 348208)
Magnetic, transport, and thermal properties of -phase UZr2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[83.0, 1.8, 'to', 1],[84.0, 300, 'K', 1],[98.0, 8, 'T', 1]

UZr2
###Magnetic, transport, and thermal properties of $δ$-phase UZr$_2$|Xiaxin Ding,Tiankai Yao,Lyuwen Fu,Zilong Hua,Jason Harp,Chris Marianetti,Madhab Neupane,Michael E. Manley,David Hurley,Krzysztof Gofryk###
(348221, 348223)
 Alloys of hexagonal delta-phase UZr2 have been synthesized and studiedby means of heat capacity, magnetic susceptibility, magnetization, electricalresistivity, magnetoresistance, thermoelectric power, thermal conductivitymeasurements, for the first time, at temperatures from 1.8 to 300 K and inmagnetic fields up to 8 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[68.0, 1.8, 'to', 0],[69.0, 300, 'K', 0],[83.0, 8, 'T', 0]

V/K
###Magnetic, transport, and thermal properties of $δ$-phase UZr$_2$|Xiaxin Ding,Tiankai Yao,Lyuwen Fu,Zilong Hua,Jason Harp,Chris Marianetti,Madhab Neupane,Michael E. Manley,David Hurley,Krzysztof Gofryk###
(348344, 348346)
 The weak temperature dependence of the magneticsusceptibility and the small value of both Seebeck (0.75 muV/K at roomtemperature) and of the Sommerfeld coefficient (13.5 mJ mol-1 K-2)point to 5f<missing VAR>-electrons in this material having a delocalized nature.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[53.0, 1.8, 'to', 1],[52.0, 300, 'K', 1],[38.0, 8, 'T', 1]

K
###Magnetic, transport, and thermal properties of $δ$-phase UZr$_2$|Xiaxin Ding,Tiankai Yao,Lyuwen Fu,Zilong Hua,Jason Harp,Chris Marianetti,Madhab Neupane,Michael E. Manley,David Hurley,Krzysztof Gofryk###
(348376, 348376)
 The weak temperature dependence of the magneticsusceptibility and the small value of both Seebeck (0.75 muV/K at roomtemperature) and of the Sommerfeld coefficient (13.5 mJ mol-1 K-2)point to 5f<missing VAR>-electrons in this material having a delocalized nature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 1.8, 'to', 1],[84.0, 300, 'K', 1],[70.0, 8, 'T', 1]

UZr2
###Magnetic, transport, and thermal properties of $δ$-phase UZr$_2$|Xiaxin Ding,Tiankai Yao,Lyuwen Fu,Zilong Hua,Jason Harp,Chris Marianetti,Madhab Neupane,Michael E. Manley,David Hurley,Krzysztof Gofryk###
(348436, 348438)
 Theelectrical resistivity and magnetoresistance indicate the presence ofsignificant electronic disorder in delta-UZr2, consistent with thedisorder in its crystal structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[145.0, 1.8, 'to', 2],[144.0, 300, 'K', 2],[130.0, 8, 'T', 2]

Sb2
###Weak localization and anti-localization in rare earth doped topological insulators|Zengji Yue,Kirrily Rule,Zhi Li,Weiyao Zhao,Lina Sang,Guangsai Yang,Cheng Tan,Lan Wang,Abuduliken Bake,Xiaolin Wang###
(348544, 348545)
 We study magneto-transport phenomena in two rare-earth doped topologicalinsulators, SmxFexSb2-2x<missing VAR>Te3 and SmxBi2-xTe2Se single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Te3
###Weak localization and anti-localization in rare earth doped topological insulators|Zengji Yue,Kirrily Rule,Zhi Li,Weiyao Zhao,Lina Sang,Guangsai Yang,Cheng Tan,Lan Wang,Abuduliken Bake,Xiaolin Wang###
(348549, 348550)
 We study magneto-transport phenomena in two rare-earth doped topologicalinsulators, SmxFexSb2-2x<missing VAR>Te3 and SmxBi2-xTe2Se single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2-xTe2Se
###Weak localization and anti-localization in rare earth doped topological insulators|Zengji Yue,Kirrily Rule,Zhi Li,Weiyao Zhao,Lina Sang,Guangsai Yang,Cheng Tan,Lan Wang,Abuduliken Bake,Xiaolin Wang###
(348555, 348561)
 We study magneto-transport phenomena in two rare-earth doped topologicalinsulators, SmxFexSb2-2x<missing VAR>Te3 and SmxBi2-xTe2Se single crystals.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

Sm
###Weak localization and anti-localization in rare earth doped topological insulators|Zengji Yue,Kirrily Rule,Zhi Li,Weiyao Zhao,Lina Sang,Guangsai Yang,Cheng Tan,Lan Wang,Abuduliken Bake,Xiaolin Wang###
(348792, 348792)
 Magnetometry measurements indicate that theSm-dopant alone is paramagnetic, whereas the co-doped Fe-Sm state hasshort-range antiferromagnetic order.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Weak localization and anti-localization in rare earth doped topological insulators|Zengji Yue,Kirrily Rule,Zhi Li,Weiyao Zhao,Lina Sang,Guangsai Yang,Cheng Tan,Lan Wang,Abuduliken Bake,Xiaolin Wang###
(348811, 348811)
 Magnetometry measurements indicate that theSm-dopant alone is paramagnetic, whereas the co-doped Fe-Sm state hasshort-range antiferromagnetic order.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sm
###Weak localization and anti-localization in rare earth doped topological insulators|Zengji Yue,Kirrily Rule,Zhi Li,Weiyao Zhao,Lina Sang,Guangsai Yang,Cheng Tan,Lan Wang,Abuduliken Bake,Xiaolin Wang###
(348813, 348813)
 Magnetometry measurements indicate that theSm-dopant alone is paramagnetic, whereas the co-doped Fe-Sm state hasshort-range antiferromagnetic order.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Tunnel magnetoresistance in scandium nitride magnetic tunnel junctions using first principles|Suyogya Karki,Vivian Rogers,Priyamvada Jadaun,Daniel S. Marshall,Jean Anne C. Incorvia###
(348947, 348947)
 In state-of-the-art magnetic tunnel junctions, magnesium oxide isused as the tunnel barrier between magnetic electrodes, providing a uniquelylarge tunnel magnetoresistance at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/ScN/Fe
###Tunnel magnetoresistance in scandium nitride magnetic tunnel junctions using first principles|Suyogya Karki,Vivian Rogers,Priyamvada Jadaun,Daniel S. Marshall,Jean Anne C. Incorvia###
(349144, 349149)
 Thesesimulations demonstrate a high tunnel magnetoresistance in Fe/ScN/Fe MTJs viaDelta1 and Delta2 symmetry filtering with low wavefunction decayrates, allowing a low resistance-area product.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

II
###Butterfly-like anisotropic magnetoresistance and angle-dependent Berry phase in Type-II Weyl semimetal WP2|Kaixuan Zhang,Yongping Du,Pengdong Wang,Laiming Wei,Lin Li,Qiang Zhang,Wei Qin,Zhiyong Lin,Bin Cheng,Yifan Wang,Han Xu,Xiaodong Fan,Zhe Sun,Xiangang Wan,Changgan Zeng###
(349278, 349279)
Butterfly-like anisotropic magnetoresistance and angle-dependent Berry phase in Type-II Weyl semimetal WP2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WP2
###Butterfly-like anisotropic magnetoresistance and angle-dependent Berry phase in Type-II Weyl semimetal WP2|Kaixuan Zhang,Yongping Du,Pengdong Wang,Laiming Wei,Lin Li,Qiang Zhang,Wei Qin,Zhiyong Lin,Bin Cheng,Yifan Wang,Han Xu,Xiaodong Fan,Zhe Sun,Xiangang Wan,Changgan Zeng###
(349285, 349287)
Butterfly-like anisotropic magnetoresistance and angle-dependent Berry phase in Type-II Weyl semimetal WP2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Butterfly-like anisotropic magnetoresistance and angle-dependent Berry phase in Type-II Weyl semimetal WP2|Kaixuan Zhang,Yongping Du,Pengdong Wang,Laiming Wei,Lin Li,Qiang Zhang,Wei Qin,Zhiyong Lin,Bin Cheng,Yifan Wang,Han Xu,Xiaodong Fan,Zhe Sun,Xiangang Wan,Changgan Zeng###
(349351, 349352)
 Here, we present acomprehensive study of the type-II Weyl semimetal WP2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WP2
###Butterfly-like anisotropic magnetoresistance and angle-dependent Berry phase in Type-II Weyl semimetal WP2|Kaixuan Zhang,Yongping Du,Pengdong Wang,Laiming Wei,Lin Li,Qiang Zhang,Wei Qin,Zhiyong Lin,Bin Cheng,Yifan Wang,Han Xu,Xiaodong Fan,Zhe Sun,Xiangang Wan,Changgan Zeng###
(349358, 349360)
 Here, we present acomprehensive study of the type-II Weyl semimetal WP2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WP2
###Butterfly-like anisotropic magnetoresistance and angle-dependent Berry phase in Type-II Weyl semimetal WP2|Kaixuan Zhang,Yongping Du,Pengdong Wang,Laiming Wei,Lin Li,Qiang Zhang,Wei Qin,Zhiyong Lin,Bin Cheng,Yifan Wang,Han Xu,Xiaodong Fan,Zhe Sun,Xiangang Wan,Changgan Zeng###
(349575, 349577)
 The revealed topologicalcharacters and anisotropic Fermi surfaces of WP2 substantially enrich thephysical properties of Weyl semimetals and hold great promises in topologicalelectronic and Fermitronic device applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PH
###Angular dependence of magnetoresistance and planar Hall effect in semimetals in strong magnetic fields|Akiyoshi Yamada,Yuki Fuseya###
(349858, 349859)
 Using this new approach, we explain the qualitativechange in the angular dependence of transverse magnetoresistance (TMR),anisotropic magnetoresistance (AMR), and planar Hall effect (PHE) in bismuthwith an increase in the magnetic field.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PH
###Angular dependence of magnetoresistance and planar Hall effect in semimetals in strong magnetic fields|Akiyoshi Yamada,Yuki Fuseya###
(349916, 349917)
 This unveils the puzzle of nontrivialfield-induced changes in TMR, AMR, and PHE<missing VAR> observed recently in semimetalbismuth.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Determination of the spin orientation of helical electrons in monolayer WTe2|Cheng Tan,Ming-Xun Deng,Feixiang Xiang,Guolin Zheng,Sultan Albarakati,Meri Algarni,James Partridge,Alex R. Hamilton,Rui-Qiang Wang,Lan Wang###
(349960, 349962)
Determination of the spin orientation of helical electrons in monolayer WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Determination of the spin orientation of helical electrons in monolayer WTe2|Cheng Tan,Ming-Xun Deng,Feixiang Xiang,Guolin Zheng,Sultan Albarakati,Meri Algarni,James Partridge,Alex R. Hamilton,Rui-Qiang Wang,Lan Wang###
(349967, 349969)
 Monolayer WTe2 is predicted to be a quantum spin Hall insulator (Q<missing VAR>SHI) andelectron transport along its edges has been experimentally observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Determination of the spin orientation of helical electrons in monolayer WTe2|Cheng Tan,Ming-Xun Deng,Feixiang Xiang,Guolin Zheng,Sultan Albarakati,Meri Algarni,James Partridge,Alex R. Hamilton,Rui-Qiang Wang,Lan Wang###
(349993, 349993)
 Monolayer WTe2 is predicted to be a quantum spin Hall insulator (Q<missing VAR>SHI) andelectron transport along its edges has been experimentally observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SHI
###Determination of the spin orientation of helical electrons in monolayer WTe2|Cheng Tan,Ming-Xun Deng,Feixiang Xiang,Guolin Zheng,Sultan Albarakati,Meri Algarni,James Partridge,Alex R. Hamilton,Rui-Qiang Wang,Lan Wang###
(350031, 350033)
 However,the smoking gun of Q<missing VAR>SHI, spin momentum locking of the edge electrons, has notbeen experimentally demonstrated.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Determination of the spin orientation of helical electrons in monolayer WTe2|Cheng Tan,Ming-Xun Deng,Feixiang Xiang,Guolin Zheng,Sultan Albarakati,Meri Algarni,James Partridge,Alex R. Hamilton,Rui-Qiang Wang,Lan Wang###
(350111, 350113)
 We propose a model to establish therelationship between the anisotropic magnetoresistance (AMR) and spinorientation of the helical electrons in WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Determination of the spin orientation of helical electrons in monolayer WTe2|Cheng Tan,Ming-Xun Deng,Feixiang Xiang,Guolin Zheng,Sultan Albarakati,Meri Algarni,James Partridge,Alex R. Hamilton,Rui-Qiang Wang,Lan Wang###
(350199, 350201)
 Our results not only demonstrate thatWTe2 is indeed a Q<missing VAR>SHI, but also suggest a convenient method to determine thespin orientation of other Q<missing VAR>SHIs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SHI
###Determination of the spin orientation of helical electrons in monolayer WTe2|Cheng Tan,Ming-Xun Deng,Feixiang Xiang,Guolin Zheng,Sultan Albarakati,Meri Algarni,James Partridge,Alex R. Hamilton,Rui-Qiang Wang,Lan Wang###
(350210, 350212)
 Our results not only demonstrate thatWTe2 is indeed a Q<missing VAR>SHI, but also suggest a convenient method to determine thespin orientation of other Q<missing VAR>SHIs.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SH
###Determination of the spin orientation of helical electrons in monolayer WTe2|Cheng Tan,Ming-Xun Deng,Feixiang Xiang,Guolin Zheng,Sultan Albarakati,Meri Algarni,James Partridge,Alex R. Hamilton,Rui-Qiang Wang,Lan Wang###
(350243, 350244)
 Our results not only demonstrate thatWTe2 is indeed a Q<missing VAR>SHI, but also suggest a convenient method to determine thespin orientation of other Q<missing VAR>SHIs.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi
###Investigation of superconducting properties and possible nematic superconductivity in self-doped BiCh2-based superconductor CeOBiS1.7Se0.3|Ryosuke Kiyama,Kazuhisa Hoshi,Yosuke Goto,Yoshikazu Mizuguchi###
(350278, 350278)
Investigation of superconducting properties and possible nematic superconductivity in self-doped BiCh2-based superconductor CeOBiS1.7Se0.3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 3.3, 'K', 4]

CeOBiS1.7Se0.3
###Investigation of superconducting properties and possible nematic superconductivity in self-doped BiCh2-based superconductor CeOBiS1.7Se0.3|Ryosuke Kiyama,Kazuhisa Hoshi,Yosuke Goto,Yoshikazu Mizuguchi###
(350286, 350292)
Investigation of superconducting properties and possible nematic superconductivity in self-doped BiCh2-based superconductor CeOBiS1.7Se0.3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0.33999999999999997,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 3.3, 'K', 4]

Bi
###Investigation of superconducting properties and possible nematic superconductivity in self-doped BiCh2-based superconductor CeOBiS1.7Se0.3|Ryosuke Kiyama,Kazuhisa Hoshi,Yosuke Goto,Yoshikazu Mizuguchi###
(350320, 350320)
 We investigate the superconducting properties and possible nematicsuperconductivity of self-doped BiCh2-based (Ch S, Se) superconductorCeOBiS1.7Se0.3 through the measurements of in-plane anisotropy ofmagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 3.3, 'K', 3]

S
###Investigation of superconducting properties and possible nematic superconductivity in self-doped BiCh2-based superconductor CeOBiS1.7Se0.3|Ryosuke Kiyama,Kazuhisa Hoshi,Yosuke Goto,Yoshikazu Mizuguchi###
(350329, 350329)
 We investigate the superconducting properties and possible nematicsuperconductivity of self-doped BiCh2-based (Ch S, Se) superconductorCeOBiS1.7Se0.3 through the measurements of in-plane anisotropy ofmagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 3.3, 'K', 3]

Se
###Investigation of superconducting properties and possible nematic superconductivity in self-doped BiCh2-based superconductor CeOBiS1.7Se0.3|Ryosuke Kiyama,Kazuhisa Hoshi,Yosuke Goto,Yoshikazu Mizuguchi###
(350332, 350332)
 We investigate the superconducting properties and possible nematicsuperconductivity of self-doped BiCh2-based (Ch S, Se) superconductorCeOBiS1.7Se0.3 through the measurements of in-plane anisotropy ofmagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 3.3, 'K', 3]

CeOBiS1.7Se0.3
###Investigation of superconducting properties and possible nematic superconductivity in self-doped BiCh2-based superconductor CeOBiS1.7Se0.3|Ryosuke Kiyama,Kazuhisa Hoshi,Yosuke Goto,Yoshikazu Mizuguchi###
(350338, 350344)
 We investigate the superconducting properties and possible nematicsuperconductivity of self-doped BiCh2-based (Ch S, Se) superconductorCeOBiS1.7Se0.3 through the measurements of in-plane anisotropy ofmagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0.33999999999999997,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 3.3, 'K', 3]

CeOBiS1.7Se0.3
###Investigation of superconducting properties and possible nematic superconductivity in self-doped BiCh2-based superconductor CeOBiS1.7Se0.3|Ryosuke Kiyama,Kazuhisa Hoshi,Yosuke Goto,Yoshikazu Mizuguchi###
(350372, 350378)
 Single crystals of CeOBiS1.7Se0.3 were grown using a fluxmethod.
Featurization terminated normally.
0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0.33999999999999997,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 3.3, 'K', 2]

P4
###Investigation of superconducting properties and possible nematic superconductivity in self-doped BiCh2-based superconductor CeOBiS1.7Se0.3|Ryosuke Kiyama,Kazuhisa Hoshi,Yosuke Goto,Yoshikazu Mizuguchi###
(350424, 350425)
 Single-crystal structural analysis revealed that the crystal structureat room temperature is tetragonal (P4/nmm).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 3.3, 'K', 1]

Bi
###Investigation of superconducting properties and possible nematic superconductivity in self-doped BiCh2-based superconductor CeOBiS1.7Se0.3|Ryosuke Kiyama,Kazuhisa Hoshi,Yosuke Goto,Yoshikazu Mizuguchi###
(350503, 350503)
 Investigation of anisotropy of upper critical fieldsuggested relatively low anisotropy in the crystal as compared to otherBiCh2-based superconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 3.3, 'K', 1]

In
###Investigation of superconducting properties and possible nematic superconductivity in self-doped BiCh2-based superconductor CeOBiS1.7Se0.3|Ryosuke Kiyama,Kazuhisa Hoshi,Yosuke Goto,Yoshikazu Mizuguchi###
(350512, 350512)
 In the superconducting states of CeOBiS1.7Se0.3,two-fold symmetric in-plane anisotropy of magnetoresistance was observed, whichindicates the in-plane rotational symmetry breaking in the tetragonal structureand hence the possibility of nematic superconductivity in CeOBiS1.7Se0.3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 3.3, 'K', 2]

CeOBiS1.7Se0.3
###Investigation of superconducting properties and possible nematic superconductivity in self-doped BiCh2-based superconductor CeOBiS1.7Se0.3|Ryosuke Kiyama,Kazuhisa Hoshi,Yosuke Goto,Yoshikazu Mizuguchi###
(350522, 350528)
 In the superconducting states of CeOBiS1.7Se0.3,two-fold symmetric in-plane anisotropy of magnetoresistance was observed, whichindicates the in-plane rotational symmetry breaking in the tetragonal structureand hence the possibility of nematic superconductivity in CeOBiS1.7Se0.3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0.33999999999999997,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 3.3, 'K', 2]

CeOBiS1.7Se0.3
###Investigation of superconducting properties and possible nematic superconductivity in self-doped BiCh2-based superconductor CeOBiS1.7Se0.3|Ryosuke Kiyama,Kazuhisa Hoshi,Yosuke Goto,Yoshikazu Mizuguchi###
(350595, 350601)
 In the superconducting states of CeOBiS1.7Se0.3,two-fold symmetric in-plane anisotropy of magnetoresistance was observed, whichindicates the in-plane rotational symmetry breaking in the tetragonal structureand hence the possibility of nematic superconductivity in CeOBiS1.7Se0.3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0.33999999999999997,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 3.3, 'K', 2]

ScPtBi
###Magnetotransport signatures of chiral magnetic anomaly in the half-Heusler phase ScPtBi|Orest Pavlosiuk,Andrzej Jezierski,Dariusz Kaczorowski,Piotr Wiśniewski###
(350634, 350636)
Magnetotransport signatures of chiral magnetic anomaly in the half-Heusler phase ScPtBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[231.0, 0.7, 'K', 4],[263.0, 0.23, 'K', 4]

ScPtBi
###Magnetotransport signatures of chiral magnetic anomaly in the half-Heusler phase ScPtBi|Orest Pavlosiuk,Andrzej Jezierski,Dariusz Kaczorowski,Piotr Wiśniewski###
(350649, 350651)
 Study of magnetotransport properties of ScPtBi revealed simultaneously anegative contribution to the longitudinal magnetoresistance, the planar Halleffect, and distinct angular narrowing of the longitudinal magnetoresistance three hallmarks of chiral magnetic anomaly (pumping of axial charge betweenWeyl nodes), a distinct property of topological semimetals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[216.0, 0.7, 'K', 3],[248.0, 0.23, 'K', 3]

ScPtBi
###Magnetotransport signatures of chiral magnetic anomaly in the half-Heusler phase ScPtBi|Orest Pavlosiuk,Andrzej Jezierski,Dariusz Kaczorowski,Piotr Wiśniewski###
(350792, 350794)
 Electronicstructure calculations show that structural defects, such as antisites andvacancies, bring substantial density of states at the Fermi level of ScPtBi,indicating that it is a semimetal, not a zero-gap semiconductor, as predictedearlier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 0.7, 'K', 2],[105.0, 0.23, 'K', 2]

ScPtBi
###Magnetotransport signatures of chiral magnetic anomaly in the half-Heusler phase ScPtBi|Orest Pavlosiuk,Andrzej Jezierski,Dariusz Kaczorowski,Piotr Wiśniewski###
(350846, 350848)
 This is in accord with electrical resistivity in ScPtBi, showing nocharacteristics of semiconductor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 0.7, 'K', 1],[51.0, 0.23, 'K', 1]

B
###Magnetotransport in semiconductors and two-dimensional materials from first principles|Dhruv C. Desai,Bahdan Zviazhynski,Jin-Jian Zhou,Marco Bernardi###
(350967, 350967)
 We demonstrate a first-principles method to study magnetotransport inmaterials by solving the Boltzmann transport equation (BTE) in the presence ofan external magnetic field.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[297.0, 2, 'D', 6]

Si
###Magnetotransport in semiconductors and two-dimensional materials from first principles|Dhruv C. Desai,Bahdan Zviazhynski,Jin-Jian Zhou,Marco Bernardi###
(351038, 351038)
 We apply our method tovarious semiconductors (Si and GaAs) and two-dimensional (2D) materials(graphene) as representative case studies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[226.0, 2, 'D', 4]

As
###Magnetotransport in semiconductors and two-dimensional materials from first principles|Dhruv C. Desai,Bahdan Zviazhynski,Jin-Jian Zhou,Marco Bernardi###
(351043, 351043)
 We apply our method tovarious semiconductors (Si and GaAs) and two-dimensional (2D) materials(graphene) as representative case studies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[221.0, 2, 'D', 4]

Si
###Magnetotransport in semiconductors and two-dimensional materials from first principles|Dhruv C. Desai,Bahdan Zviazhynski,Jin-Jian Zhou,Marco Bernardi###
(351091, 351091)
 The magnetoresistance, Hall mobilityand Hall factor in Si and GaAs are in very good agreement with experiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 2, 'D', 3]

GaAs
###Magnetotransport in semiconductors and two-dimensional materials from first principles|Dhruv C. Desai,Bahdan Zviazhynski,Jin-Jian Zhou,Marco Bernardi###
(351095, 351096)
 The magnetoresistance, Hall mobilityand Hall factor in Si and GaAs are in very good agreement with experiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[168.0, 2, 'D', 3]

In
###Magnetotransport in semiconductors and two-dimensional materials from first principles|Dhruv C. Desai,Bahdan Zviazhynski,Jin-Jian Zhou,Marco Bernardi###
(351113, 351113)
 Ingraphene, our method predicts a large magnetoresistance, consistent withexperiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 2, 'D', 2]

B
###Magnetotransport in semiconductors and two-dimensional materials from first principles|Dhruv C. Desai,Bahdan Zviazhynski,Jin-Jian Zhou,Marco Bernardi###
(351226, 351226)
 Our work provides a detailed understanding ofthe microscopic mechanisms governing magnetotransport coefficients,establishing the BTE in a magnetic field as a broadly applicablefirst-principles tool to investigate transport in semiconductors and 2Dmaterials.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 2, 'D', 0]

Gd
###Double magnetic phase transitions and magnetotransport anomalies in a new compound Gd$_\textbf{2}$AgSi$_\textbf{3}$|Baidyanath Sahu###
(351679, 351679)
Double magnetic phase transitions and magnetotransport anomalies in a new compound Gdtextbf2AgSitextbf3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[339.0, 9.5, 'J', 4],[346.0, 7.5, 'K', 4],[360.0, 9, 'T', 4]

AgSi
###Double magnetic phase transitions and magnetotransport anomalies in a new compound Gd$_\textbf{2}$AgSi$_\textbf{3}$|Baidyanath Sahu###
(351682, 351683)
Double magnetic phase transitions and magnetotransport anomalies in a new compound Gdtextbf2AgSitextbf3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[335.0, 9.5, 'J', 4],[342.0, 7.5, 'K', 4],[356.0, 9, 'T', 4]

C
###Double magnetic phase transitions and magnetotransport anomalies in a new compound Gd$_\textbf{2}$AgSi$_\textbf{3}$|Baidyanath Sahu###
(351708, 351708)
 Dc and ac-magnetic susceptibility (chi), specific heat (CmathrmP),electrical resistivity (rho) and magnetoresistance measurements performed onthe new polycrystalline compound mathrmGd2AgSi3, crystallizing in thealpha-mathrmThSi2 tetragonal structure, are reported.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[310.0, 9.5, 'J', 3],[317.0, 7.5, 'K', 3],[331.0, 9, 'T', 3]

P
###Double magnetic phase transitions and magnetotransport anomalies in a new compound Gd$_\textbf{2}$AgSi$_\textbf{3}$|Baidyanath Sahu###
(351710, 351710)
 Dc and ac-magnetic susceptibility (chi), specific heat (CmathrmP),electrical resistivity (rho) and magnetoresistance measurements performed onthe new polycrystalline compound mathrmGd2AgSi3, crystallizing in thealpha-mathrmThSi2 tetragonal structure, are reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[308.0, 9.5, 'J', 3],[315.0, 7.5, 'K', 3],[329.0, 9, 'T', 3]

Gd2AgSi3
###Double magnetic phase transitions and magnetotransport anomalies in a new compound Gd$_\textbf{2}$AgSi$_\textbf{3}$|Baidyanath Sahu###
(351743, 351747)
 Dc and ac-magnetic susceptibility (chi), specific heat (CmathrmP),electrical resistivity (rho) and magnetoresistance measurements performed onthe new polycrystalline compound mathrmGd2AgSi3, crystallizing in thealpha-mathrmThSi2 tetragonal structure, are reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[271.0, 9.5, 'J', 3],[278.0, 7.5, 'K', 3],[292.0, 9, 'T', 3]

ThSi2
###Double magnetic phase transitions and magnetotransport anomalies in a new compound Gd$_\textbf{2}$AgSi$_\textbf{3}$|Baidyanath Sahu###
(351760, 351762)
 Dc and ac-magnetic susceptibility (chi), specific heat (CmathrmP),electrical resistivity (rho) and magnetoresistance measurements performed onthe new polycrystalline compound mathrmGd2AgSi3, crystallizing in thealpha-mathrmThSi2 tetragonal structure, are reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0
[256.0, 9.5, 'J', 3],[263.0, 7.5, 'K', 3],[277.0, 9, 'T', 3]

N1
###Double magnetic phase transitions and magnetotransport anomalies in a new compound Gd$_\textbf{2}$AgSi$_\textbf{3}$|Baidyanath Sahu###
(351816, 351817)
 Two magneticphase transitions were observed in dc and ac susceptibility, specific heat, andresistivity measurements at temperatures mathrmT<missing VAR>N1  11 K andrmT<missing VAR>N2  20 K, despite a single site occupied by Gd atom, which is anindication of the complex magnetic behavior.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[201.0, 9.5, 'J', 2],[208.0, 7.5, 'K', 2],[222.0, 9, 'T', 2]

K
###Double magnetic phase transitions and magnetotransport anomalies in a new compound Gd$_\textbf{2}$AgSi$_\textbf{3}$|Baidyanath Sahu###
(351822, 351822)
 Two magneticphase transitions were observed in dc and ac susceptibility, specific heat, andresistivity measurements at temperatures mathrmT<missing VAR>N1  11 K andrmT<missing VAR>N2  20 K, despite a single site occupied by Gd atom, which is anindication of the complex magnetic behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[196.0, 9.5, 'J', 2],[203.0, 7.5, 'K', 2],[217.0, 9, 'T', 2]

N2
###Double magnetic phase transitions and magnetotransport anomalies in a new compound Gd$_\textbf{2}$AgSi$_\textbf{3}$|Baidyanath Sahu###
(351829, 351830)
 Two magneticphase transitions were observed in dc and ac susceptibility, specific heat, andresistivity measurements at temperatures mathrmT<missing VAR>N1  11 K andrmT<missing VAR>N2  20 K, despite a single site occupied by Gd atom, which is anindication of the complex magnetic behavior.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 9.5, 'J', 2],[195.0, 7.5, 'K', 2],[209.0, 9, 'T', 2]

K
###Double magnetic phase transitions and magnetotransport anomalies in a new compound Gd$_\textbf{2}$AgSi$_\textbf{3}$|Baidyanath Sahu###
(351835, 351835)
 Two magneticphase transitions were observed in dc and ac susceptibility, specific heat, andresistivity measurements at temperatures mathrmT<missing VAR>N1  11 K andrmT<missing VAR>N2  20 K, despite a single site occupied by Gd atom, which is anindication of the complex magnetic behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[183.0, 9.5, 'J', 2],[190.0, 7.5, 'K', 2],[204.0, 9, 'T', 2]

Gd
###Double magnetic phase transitions and magnetotransport anomalies in a new compound Gd$_\textbf{2}$AgSi$_\textbf{3}$|Baidyanath Sahu###
(351850, 351850)
 Two magneticphase transitions were observed in dc and ac susceptibility, specific heat, andresistivity measurements at temperatures mathrmT<missing VAR>N1  11 K andrmT<missing VAR>N2  20 K, despite a single site occupied by Gd atom, which is anindication of the complex magnetic behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[168.0, 9.5, 'J', 2],[175.0, 7.5, 'K', 2],[189.0, 9, 'T', 2]

Gd2AgSi3
###Double magnetic phase transitions and magnetotransport anomalies in a new compound Gd$_\textbf{2}$AgSi$_\textbf{3}$|Baidyanath Sahu###
(351876, 351880)
 mathrmGd2AgSi3 turns out tobe one of the rare Gd compound in which a minimum is observed in thetemperature dependence of resistivity in the paramagnetic state and alsonegative magnetoresistance over a wide temperature range (abovermT<missing VAR>N2), mimicking the behavior of exotic mathrmGd2PdSi3, inthis ternary family.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 9.5, 'J', 1],[145.0, 7.5, 'K', 1],[159.0, 9, 'T', 1]

Gd
###Double magnetic phase transitions and magnetotransport anomalies in a new compound Gd$_\textbf{2}$AgSi$_\textbf{3}$|Baidyanath Sahu###
(351899, 351899)
 mathrmGd2AgSi3 turns out tobe one of the rare Gd compound in which a minimum is observed in thetemperature dependence of resistivity in the paramagnetic state and alsonegative magnetoresistance over a wide temperature range (abovermT<missing VAR>N2), mimicking the behavior of exotic mathrmGd2PdSi3, inthis ternary family.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 9.5, 'J', 1],[126.0, 7.5, 'K', 1],[140.0, 9, 'T', 1]

N2
###Double magnetic phase transitions and magnetotransport anomalies in a new compound Gd$_\textbf{2}$AgSi$_\textbf{3}$|Baidyanath Sahu###
(351961, 351962)
 mathrmGd2AgSi3 turns out tobe one of the rare Gd compound in which a minimum is observed in thetemperature dependence of resistivity in the paramagnetic state and alsonegative magnetoresistance over a wide temperature range (abovermT<missing VAR>N2), mimicking the behavior of exotic mathrmGd2PdSi3, inthis ternary family.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 9.5, 'J', 1],[63.0, 7.5, 'K', 1],[77.0, 9, 'T', 1]

Gd2PdSi3
###Double magnetic phase transitions and magnetotransport anomalies in a new compound Gd$_\textbf{2}$AgSi$_\textbf{3}$|Baidyanath Sahu###
(351977, 351981)
 mathrmGd2AgSi3 turns out tobe one of the rare Gd compound in which a minimum is observed in thetemperature dependence of resistivity in the paramagnetic state and alsonegative magnetoresistance over a wide temperature range (abovermT<missing VAR>N2), mimicking the behavior of exotic mathrmGd2PdSi3, inthis ternary family.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 9.5, 'J', 1],[44.0, 7.5, 'K', 1],[58.0, 9, 'T', 1]

K
###Double magnetic phase transitions and magnetotransport anomalies in a new compound Gd$_\textbf{2}$AgSi$_\textbf{3}$|Baidyanath Sahu###
(352022, 352022)
 The isothermal magnetic entropy and adiabatic temperaturechanges reach a value of 9.5 J/kg-K and 7.5 K respectively for the field changeof 9 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 9.5, 'J', 0],[3.0, 7.5, 'K', 0],[17.0, 9, 'T', 0]

EuO/W
###Quantifying the spin mixing conductance of EuO/W heterostructures by spin Hall magnetoresistance experiments|Paul Rosenberger,Matthias Opel,Stephan Geprägs,Hans Huebl,Rudolf Gross,Martina Müller,Matthias Althammer###
(352062, 352065)
Quantifying the spin mixing conductance of EuO/W heterostructures by spin Hall magnetoresistance experiments.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

S
###Quantifying the spin mixing conductance of EuO/W heterostructures by spin Hall magnetoresistance experiments|Paul Rosenberger,Matthias Opel,Stephan Geprägs,Hans Huebl,Rudolf Gross,Martina Müller,Matthias Althammer###
(352089, 352089)
 The spin Hall magnetoresistance (SMR) allows to investigate the magnetictextures of magnetically ordered insulators in heterostructures with normalmetals by magnetotransport experiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Quantifying the spin mixing conductance of EuO/W heterostructures by spin Hall magnetoresistance experiments|Paul Rosenberger,Matthias Opel,Stephan Geprägs,Hans Huebl,Rudolf Gross,Martina Müller,Matthias Althammer###
(352148, 352148)
 We here report the observation of theSMR in in-situ prepared ferromagnetic EuO/W thin film bilayers withmagnetically and chemically well-defined interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuO/W
###Quantifying the spin mixing conductance of EuO/W heterostructures by spin Hall magnetoresistance experiments|Paul Rosenberger,Matthias Opel,Stephan Geprägs,Hans Huebl,Rudolf Gross,Martina Müller,Matthias Althammer###
(352162, 352165)
 We here report the observation of theSMR in in-situ prepared ferromagnetic EuO/W thin film bilayers withmagnetically and chemically well-defined interfaces.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

S
###Quantifying the spin mixing conductance of EuO/W heterostructures by spin Hall magnetoresistance experiments|Paul Rosenberger,Matthias Opel,Stephan Geprägs,Hans Huebl,Rudolf Gross,Martina Müller,Matthias Althammer###
(352235, 352235)
 Applying theestablished SMR model, we derive and quantify the real and imaginary parts ofthe complex spin mixing interface conductance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZrP2
###Extremely large magnetoresistance from electron-hole compensation in the nodal loop semimetal ZrP$_2$|J. Bannies,E. Razzoli,M. Michiardi,H. -H. Kung,I. S. Elfimov,M. Yao,A. Fedorov,J. Fink,C. Jozwiak,A. Bostwick,E. Rotenberg,A. Damascelli,C. Felser###
(352755, 352757)
Extremely large magnetoresistance from electron-hole compensation in the nodal loop semimetal ZrP2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 40, ',', 3],[140.0, 2, 'K', 3]

In
###Extremely large magnetoresistance from electron-hole compensation in the nodal loop semimetal ZrP$_2$|J. Bannies,E. Razzoli,M. Michiardi,H. -H. Kung,I. S. Elfimov,M. Yao,A. Fedorov,J. Fink,C. Jozwiak,A. Bostwick,E. Rotenberg,A. Damascelli,C. Felser###
(352796, 352796)
 In thisstudy, we use angle-resolved photoemission spectroscopy (ARPES) andmagneto-transport to study the electronic properties of a new transition metaldipnictide ZrP2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 40, ',', 1],[101.0, 2, 'K', 1]

S
###Extremely large magnetoresistance from electron-hole compensation in the nodal loop semimetal ZrP$_2$|J. Bannies,E. Razzoli,M. Michiardi,H. -H. Kung,I. S. Elfimov,M. Yao,A. Fedorov,J. Fink,C. Jozwiak,A. Bostwick,E. Rotenberg,A. Damascelli,C. Felser###
(352821, 352821)
 In thisstudy, we use angle-resolved photoemission spectroscopy (ARPES) andmagneto-transport to study the electronic properties of a new transition metaldipnictide ZrP2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 40, ',', 1],[76.0, 2, 'K', 1]

ZrP2
###Extremely large magnetoresistance from electron-hole compensation in the nodal loop semimetal ZrP$_2$|J. Bannies,E. Razzoli,M. Michiardi,H. -H. Kung,I. S. Elfimov,M. Yao,A. Fedorov,J. Fink,C. Jozwiak,A. Bostwick,E. Rotenberg,A. Damascelli,C. Felser###
(352854, 352856)
 In thisstudy, we use angle-resolved photoemission spectroscopy (ARPES) andmagneto-transport to study the electronic properties of a new transition metaldipnictide ZrP2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 40, ',', 1],[41.0, 2, 'K', 1]

ZrP2
###Extremely large magnetoresistance from electron-hole compensation in the nodal loop semimetal ZrP$_2$|J. Bannies,E. Razzoli,M. Michiardi,H. -H. Kung,I. S. Elfimov,M. Yao,A. Fedorov,J. Fink,C. Jozwiak,A. Bostwick,E. Rotenberg,A. Damascelli,C. Felser###
(352865, 352867)
 We find that ZrP2 exhibits an extremely large andunsaturated magnetoresistance of up to 40,000 % at 2 K, which originates froman almost perfect electron-hole compensation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 40, ',', 0],[30.0, 2, 'K', 0]

ZrP2
###Extremely large magnetoresistance from electron-hole compensation in the nodal loop semimetal ZrP$_2$|J. Bannies,E. Razzoli,M. Michiardi,H. -H. Kung,I. S. Elfimov,M. Yao,A. Fedorov,J. Fink,C. Jozwiak,A. Bostwick,E. Rotenberg,A. Damascelli,C. Felser###
(352935, 352937)
 Our band structure calculationsfurther show that ZrP2 hosts a topological nodal loop in proximity to theFermi level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 40, ',', 1],[38.0, 2, 'K', 1]

S
###Extremely large magnetoresistance from electron-hole compensation in the nodal loop semimetal ZrP$_2$|J. Bannies,E. Razzoli,M. Michiardi,H. -H. Kung,I. S. Elfimov,M. Yao,A. Fedorov,J. Fink,C. Jozwiak,A. Bostwick,E. Rotenberg,A. Damascelli,C. Felser###
(352973, 352973)
 Based on the ARPES measurements, we confirm the results of ourcalculations and determine the surface band structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 40, ',', 2],[76.0, 2, 'K', 2]

ZrP2
###Extremely large magnetoresistance from electron-hole compensation in the nodal loop semimetal ZrP$_2$|J. Bannies,E. Razzoli,M. Michiardi,H. -H. Kung,I. S. Elfimov,M. Yao,A. Fedorov,J. Fink,C. Jozwiak,A. Bostwick,E. Rotenberg,A. Damascelli,C. Felser###
(353013, 353015)
 Our study establishesZrP2 as a new platform to investigate near-perfect electron-holecompensation and its interplay with topological band structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 40, ',', 3],[116.0, 2, 'K', 3]

HoSb
###Topological quantum phase transition in the magnetic semimetal HoSb|Jian-Min Zhang,Fang Tang,Yurong Ruan,Y. Chen,Runwu Zhang,Wenti Guo,Shuiyuan Chen,Jianping Li,Weiyao Zhao,W. Zhou,Lei Zhang,Zhida Han,Bin Qian,Xuefan Jiang,Zhigao Huang,Dong Qian,Yong Fang###
(353079, 353080)
Topological quantum phase transition in the magnetic semimetal HoSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HoSb
###Topological quantum phase transition in the magnetic semimetal HoSb|Jian-Min Zhang,Fang Tang,Yurong Ruan,Y. Chen,Runwu Zhang,Wenti Guo,Shuiyuan Chen,Jianping Li,Weiyao Zhao,W. Zhou,Lei Zhang,Zhida Han,Bin Qian,Xuefan Jiang,Zhigao Huang,Dong Qian,Yong Fang###
(353226, 353227)
 Here, we perform the angularmagnetoresistance measurements and electronic band structure calculations toreveal the evolution of HoSbs<missing VAR> Fermi surface anisotropies and topologicalnature in different magnetic states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HoSb
###Topological quantum phase transition in the magnetic semimetal HoSb|Jian-Min Zhang,Fang Tang,Yurong Ruan,Y. Chen,Runwu Zhang,Wenti Guo,Shuiyuan Chen,Jianping Li,Weiyao Zhao,W. Zhou,Lei Zhang,Zhida Han,Bin Qian,Xuefan Jiang,Zhigao Huang,Dong Qian,Yong Fang###
(353348, 353349)
 More interestingly, a transition from the trivial (nontrivial) tonontrivial (trivial) topological electronic phase is observed when HoSbundergoes a magnetic transition from the paramagnetic (antiferromagnetic) toantiferromagnetic (ferromagnetic) state induced by temperature (appliedmagnetic field).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HoSb
###Topological quantum phase transition in the magnetic semimetal HoSb|Jian-Min Zhang,Fang Tang,Yurong Ruan,Y. Chen,Runwu Zhang,Wenti Guo,Shuiyuan Chen,Jianping Li,Weiyao Zhao,W. Zhou,Lei Zhang,Zhida Han,Bin Qian,Xuefan Jiang,Zhigao Huang,Dong Qian,Yong Fang###
(353405, 353406)
 Our studying suggests that HoSb provides an archetype platformto study the correlations between magnetism and topological states of matter.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Unusual magnetotransport in twisted bilayer graphene|Joe Finney,Aaron L. Sharpe,Eli J. Fox,Connie L. Hsueh,Daniel E. Parker,Matthew Yankowitz,Shaowen Chen,Kenji Watanabe,Takashi Taniguchi,Cory R. Dean,Ashvin Vishwanath,Marc Kastner,David Goldhaber-Gordon###
(353507, 353507)
 As with other devices with twist angles substantially largerthan the magic angle of 1.1deg, we do not observe correlated insulatingstates or band reorganization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoSn
###Flat Band Induced Negative Magnetoresistance in Multi-Orbital Kagome Metal|Jie Zhang,T. Yilmaz,J. W. R. Meier,J. Y. Pai,J. Lapano,H. X. Li,K. Kaznatcheev,E. Vescovo,A. Huon,M. Brahlek,T. Z. Ward,B. Lawrie,R. G. Moore,H. N. Lee,Y. L. Wang,H. Miao,B. Sales###
(353960, 353961)
 Here we report negative magnetoresistance and signature offerromagnetic fluctuations in a prototypical kagome metal CoSn, which featuresa flat band in proximity to the Fermi level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(CISS)
###Linear-response magnetoresistance effects in chiral systems|Xu Yang,Bart J. van Wees###
(354128, 354133)
 The chirality-induced spin selectivity (CISS) effect enables the detection ofchirality as electrical charge signals.
Featurization successful!
0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CISS
###Linear-response magnetoresistance effects in chiral systems|Xu Yang,Bart J. van Wees###
(354367, 354370)
 We illustrate this in aspin-valve device and in a chiral thin film as the CISS-induced Hanlemagnetoresistance (CHMR) effect.
Featurization terminated normally.
0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CH
###Linear-response magnetoresistance effects in chiral systems|Xu Yang,Bart J. van Wees###
(354380, 354381)
 We illustrate this in aspin-valve device and in a chiral thin film as the CISS-induced Hanlemagnetoresistance (CHMR) effect.
Featurization terminated normally.
0.5,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CISS
###Linear-response magnetoresistance effects in chiral systems|Xu Yang,Bart J. van Wees###
(354436, 354439)
 This effect helps to distinguishspin-transport-related effects from other effects, and can thereby providefurther insight into the origin of CISS.
Featurization terminated normally.
0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrPd
###SrPd, a candidate material with extremely large magnetoresistance|Xiao-Qin Lu,Peng-Jie Guo,Jian-Feng Zhang,Kai Liu,Zhong-Yi Lu###
(354450, 354451)
SrPd, a candidate material with extremely large magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrPd
###SrPd, a candidate material with extremely large magnetoresistance|Xiao-Qin Lu,Peng-Jie Guo,Jian-Feng Zhang,Kai Liu,Zhong-Yi Lu###
(354520, 354521)
 Here we propose an XMR candidatematerial SrPd based on first-principles electronic structure calculations incombination with a semi-classical model.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrPd
###SrPd, a candidate material with extremely large magnetoresistance|Xiao-Qin Lu,Peng-Jie Guo,Jian-Feng Zhang,Kai Liu,Zhong-Yi Lu###
(354564, 354565)
 The calculated carrier densities inSrPd indicate that there is a good electron-hole compensation, while thecalculated intrinsic carrier mobilities are as high as 105cm2V-1s<missing VAR>-1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###SrPd, a candidate material with extremely large magnetoresistance|Xiao-Qin Lu,Peng-Jie Guo,Jian-Feng Zhang,Kai Liu,Zhong-Yi Lu###
(354613, 354613)
 The calculated carrier densities inSrPd indicate that there is a good electron-hole compensation, while thecalculated intrinsic carrier mobilities are as high as 105cm2V-1s<missing VAR>-1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrPd
###SrPd, a candidate material with extremely large magnetoresistance|Xiao-Qin Lu,Peng-Jie Guo,Jian-Feng Zhang,Kai Liu,Zhong-Yi Lu###
(354646, 354647)
 There are only two doubly degenerate bands crossing theFermi level for SrPd, thus a semi-classical two-band model is available fordescribing its transport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrPd
###SrPd, a candidate material with extremely large magnetoresistance|Xiao-Qin Lu,Peng-Jie Guo,Jian-Feng Zhang,Kai Liu,Zhong-Yi Lu###
(354689, 354690)
 Accordingly, the magnetoresistance of SrPdunder a magnetic field of 4 Tesla is predicted to reach 105 % at lowtemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrPd
###SrPd, a candidate material with extremely large magnetoresistance|Xiao-Qin Lu,Peng-Jie Guo,Jian-Feng Zhang,Kai Liu,Zhong-Yi Lu###
(354744, 354745)
 Furthermore, the calculated topological invariant indicates thatSrPd is topologically trivial.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrPd
###SrPd, a candidate material with extremely large magnetoresistance|Xiao-Qin Lu,Peng-Jie Guo,Jian-Feng Zhang,Kai Liu,Zhong-Yi Lu###
(354764, 354765)
 Our theoretical studies suggest that SrPd canserve as an ideal platform to examine the charge compensation mechanism of theXMR effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaAlO3/SrTiO3
###Nature of electrons from oxygen vacancies and polar catastrophe at LaAlO3/SrTiO3 interfaces|Xiaorong Zhou,Zhiqi Liu###
(354832, 354840)
Nature of electrons from oxygen vacancies and polar catastrophe at LaAlO3/SrTiO3 interfaces.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

LaAlO3/SrTiO3
###Nature of electrons from oxygen vacancies and polar catastrophe at LaAlO3/SrTiO3 interfaces|Xiaorong Zhou,Zhiqi Liu###
(354908, 354916)
 The relative significance of quantum conductivity correction and magneticnature of electrons in understanding the intriguing low-temperature resistivityminimum and negative magnetoresistance of the two-dimensional electron gas atLaAlO3/SrTiO3 interfaces has been a long outstanding issue since its discovery.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

LaAlO3/SrTiO3
###Nature of electrons from oxygen vacancies and polar catastrophe at LaAlO3/SrTiO3 interfaces|Xiaorong Zhou,Zhiqi Liu###
(354967, 354975)
Here we report a comparative magnetotransport study on amorphous andoxygen-annealed crystalline LaAlO3/SrTiO3 heterostructures at a relativelyhigh-temperature range, where the orbital scattering is largely suppressed bythermal fluctuations.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

LaAlO3/SrTiO3
###Nature of electrons from oxygen vacancies and polar catastrophe at LaAlO3/SrTiO3 interfaces|Xiaorong Zhou,Zhiqi Liu###
(355054, 355062)
 Despite of a predominantly negative out-of-planemagnetoresistance effect for both, the magnetotransport is isotropic foramorphous LaAlO3/SrTiO3 while strongly anisotropic and well falls into atwo-dimensional quantum correction frame for annealed crystallineLaAlO3/SrTiO3.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

LaAlO3/SrTiO3
###Nature of electrons from oxygen vacancies and polar catastrophe at LaAlO3/SrTiO3 interfaces|Xiaorong Zhou,Zhiqi Liu###
(355098, 355106)
 Despite of a predominantly negative out-of-planemagnetoresistance effect for both, the magnetotransport is isotropic foramorphous LaAlO3/SrTiO3 while strongly anisotropic and well falls into atwo-dimensional quantum correction frame for annealed crystallineLaAlO3/SrTiO3.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

LaAlO3/SrTiO3
###Quantum oscillations in an optically-illuminated two-dimensional electron system at the LaAlO$_3$/SrTiO$_3$ interface|I. Leermakers,K. Rubi,M. Yang,B. Kerdi,M. Goiran,W. Escoffier,A. S. Rana,A. E. M. Smink,A. Brinkman,H. Hilgenkamp,J. C. Maan,U. Zeitler###
(355256, 355264)
Quantum oscillations in an optically-illuminated two-dimensional electron system at the LaAlO3/SrTiO3 interface.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

LaAlO3/SrTiO3
###Quantum oscillations in an optically-illuminated two-dimensional electron system at the LaAlO$_3$/SrTiO$_3$ interface|I. Leermakers,K. Rubi,M. Yang,B. Kerdi,M. Goiran,W. Escoffier,A. S. Rana,A. E. M. Smink,A. Brinkman,H. Hilgenkamp,J. C. Maan,U. Zeitler###
(355306, 355314)
 We have investigated the illumination effect on the magnetotransportproperties of a two-dimensional electron system at the LaAlO3/SrTiO3interface.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Ti
###Quantum oscillations in an optically-illuminated two-dimensional electron system at the LaAlO$_3$/SrTiO$_3$ interface|I. Leermakers,K. Rubi,M. Yang,B. Kerdi,M. Goiran,W. Escoffier,A. S. Rana,A. E. M. Smink,A. Brinkman,H. Hilgenkamp,J. C. Maan,U. Zeitler###
(355498, 355498)
The carrier density (sim 2 times 1012 cm-2) and effective mass(sim 1.7 me) estimated from the oscillations suggest that thehigh-mobility electrons occupy the d<missing VAR>xz/yz subbands of Tit2g orbitalextending deep within the conducting sheet of SrTiO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Quantum oscillations in an optically-illuminated two-dimensional electron system at the LaAlO$_3$/SrTiO$_3$ interface|I. Leermakers,K. Rubi,M. Yang,B. Kerdi,M. Goiran,W. Escoffier,A. S. Rana,A. E. M. Smink,A. Brinkman,H. Hilgenkamp,J. C. Maan,U. Zeitler###
(355520, 355523)
The carrier density (sim 2 times 1012 cm-2) and effective mass(sim 1.7 me) estimated from the oscillations suggest that thehigh-mobility electrons occupy the d<missing VAR>xz/yz subbands of Tit2g orbitalextending deep within the conducting sheet of SrTiO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Quantum unidirectional magnetoresistance|M. Mehraeen,Pengtao Shen,Steven S. -L. Zhang###
(355707, 355707)
 In the presence of spin-orbit coupling, an electron wave incident onthe interface of the bilayer undergoes a spin rotation and a momentum-dependentphase shift.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoPd
###Non-reciprocal magnetoresistance, directional inhomogeneity and mixed symmetry Hall devices|Gregory Kopnov,Alexander Gerber###
(355964, 355965)
The effect is demonstrated in ferromagnetic CoPd films and analyzed incomparison with the unidirectional magnetoresistance phenomena.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[209.0, 10, 'to', 4],[210.0, 1000, 'times', 4]

N
###Non-reciprocal magnetoresistance, directional inhomogeneity and mixed symmetry Hall devices|Gregory Kopnov,Alexander Gerber###
(356096, 356096)
 Magnetizationreversal and memory detection is demonstrated in the three terminal and thepartitioned normal metal-ferromagnet (NM<missing VAR> - FM) device designs.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 10, 'to', 2],[79.0, 1000, 'times', 2]

F
###Non-reciprocal magnetoresistance, directional inhomogeneity and mixed symmetry Hall devices|Gregory Kopnov,Alexander Gerber###
(356101, 356101)
 Magnetizationreversal and memory detection is demonstrated in the three terminal and thepartitioned normal metal-ferromagnet (NM<missing VAR> - FM) device designs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 10, 'to', 2],[74.0, 1000, 'times', 2]

F
###Non-reciprocal magnetoresistance, directional inhomogeneity and mixed symmetry Hall devices|Gregory Kopnov,Alexander Gerber###
(356127, 356127)
 Multi-bit memoryis realized in the partitioned FM<missing VAR>-NM<missing VAR>-FM<missing VAR> structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 10, 'to', 1],[48.0, 1000, 'times', 1]

N
###Non-reciprocal magnetoresistance, directional inhomogeneity and mixed symmetry Hall devices|Gregory Kopnov,Alexander Gerber###
(356130, 356130)
 Multi-bit memoryis realized in the partitioned FM<missing VAR>-NM<missing VAR>-FM<missing VAR> structure.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 10, 'to', 1],[45.0, 1000, 'times', 1]

F
###Non-reciprocal magnetoresistance, directional inhomogeneity and mixed symmetry Hall devices|Gregory Kopnov,Alexander Gerber###
(356133, 356133)
 Multi-bit memoryis realized in the partitioned FM<missing VAR>-NM<missing VAR>-FM<missing VAR> structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 10, 'to', 1],[42.0, 1000, 'times', 1]

LaAlGe
###Experimental study of transport properties of Weyl semimetal LaAlGe thin films grown by molecular beam epitaxy|Niraj Bhattarai,Andrew W. Forbes,Christopher Gassen,Raghad S. H. Saqat,Ian L. Pegg,John Philip###
(356217, 356219)
Experimental study of transport properties of Weyl semimetal LaAlGe thin films grown by molecular beam epitaxy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[212.0, 6, 'T', 5]

AlGe
###Experimental study of transport properties of Weyl semimetal LaAlGe thin films grown by molecular beam epitaxy|Niraj Bhattarai,Andrew W. Forbes,Christopher Gassen,Raghad S. H. Saqat,Ian L. Pegg,John Philip###
(356275, 356276)
 Recently these compounds of the type R<missing VAR>AlGe (R<missing VAR> La, Ce, Pr) have been shown to exhibit Weyl semimetallic behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 6, 'T', 3]

La
###Experimental study of transport properties of Weyl semimetal LaAlGe thin films grown by molecular beam epitaxy|Niraj Bhattarai,Andrew W. Forbes,Christopher Gassen,Raghad S. H. Saqat,Ian L. Pegg,John Philip###
(356283, 356283)
 Recently these compounds of the type R<missing VAR>AlGe (R<missing VAR> La, Ce, Pr) have been shown to exhibit Weyl semimetallic behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 6, 'T', 3]

Ce
###Experimental study of transport properties of Weyl semimetal LaAlGe thin films grown by molecular beam epitaxy|Niraj Bhattarai,Andrew W. Forbes,Christopher Gassen,Raghad S. H. Saqat,Ian L. Pegg,John Philip###
(356286, 356286)
 Recently these compounds of the type R<missing VAR>AlGe (R<missing VAR> La, Ce, Pr) have been shown to exhibit Weyl semimetallic behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 6, 'T', 3]

Pr
###Experimental study of transport properties of Weyl semimetal LaAlGe thin films grown by molecular beam epitaxy|Niraj Bhattarai,Andrew W. Forbes,Christopher Gassen,Raghad S. H. Saqat,Ian L. Pegg,John Philip###
(356289, 356289)
 Recently these compounds of the type R<missing VAR>AlGe (R<missing VAR> La, Ce, Pr) have been shown to exhibit Weyl semimetallic behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 6, 'T', 3]

In
###Experimental study of transport properties of Weyl semimetal LaAlGe thin films grown by molecular beam epitaxy|Niraj Bhattarai,Andrew W. Forbes,Christopher Gassen,Raghad S. H. Saqat,Ian L. Pegg,John Philip###
(356309, 356309)
 In thiswork, we have investigated the crystal structure, electronic, andmagneto-transport properties of the Weyl semimetal LaAlGe thin films grown bymolecular beam epitaxy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 6, 'T', 2]

LaAlGe
###Experimental study of transport properties of Weyl semimetal LaAlGe thin films grown by molecular beam epitaxy|Niraj Bhattarai,Andrew W. Forbes,Christopher Gassen,Raghad S. H. Saqat,Ian L. Pegg,John Philip###
(356350, 356352)
 In thiswork, we have investigated the crystal structure, electronic, andmagneto-transport properties of the Weyl semimetal LaAlGe thin films grown bymolecular beam epitaxy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 6, 'T', 2]

Fe0.29TaS2
###Evidence for anisotropic spin-triplet Andreev reflection at the 2D van der Waals ferromagnet/superconductor interface|Ranran Cai,Yunyan Yao,Peng Lv,Yang Ma,Wenyu Xing,Boning Li,Yuan Ji,Huibin Zhou,Chenghao Shen,Shuang Jia,X. C. Xie,Igor Zutic,Qing-Feng Sun,Wei Han###
(356737, 356741)
 Here, we report the observation of large magnetoresistances atthe interface between a quasi-two-dimensional van der Waals ferromagnetFe0.29TaS2 and a conventional s<missing VAR>-wave superconductor NbN, which provides thepossible experimental evidence for the spin triplet Andreev reflection andinduced spin-triplet superconductivity at ferromagnet/superconductor interfacearising from Rashba spin-orbit coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.60790273556231,0,0,0,0,0,0,0,0,0,0.08814589665653495,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.303951367781155,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 2, 'D', 3]

NbN
###Evidence for anisotropic spin-triplet Andreev reflection at the 2D van der Waals ferromagnet/superconductor interface|Ranran Cai,Yunyan Yao,Peng Lv,Yang Ma,Wenyu Xing,Boning Li,Yuan Ji,Huibin Zhou,Chenghao Shen,Shuang Jia,X. C. Xie,Igor Zutic,Qing-Feng Sun,Wei Han###
(356755, 356756)
 Here, we report the observation of large magnetoresistances atthe interface between a quasi-two-dimensional van der Waals ferromagnetFe0.29TaS2 and a conventional s<missing VAR>-wave superconductor NbN, which provides thepossible experimental evidence for the spin triplet Andreev reflection andinduced spin-triplet superconductivity at ferromagnet/superconductor interfacearising from Rashba spin-orbit coupling.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[185.0, 2, 'D', 3]

Sr2RuO4
###Fractional magnetoresistance oscillations in spin-triplet superconducting rings|Gábor B. Halász###
(357274, 357278)
These fractional oscillations can unambiguously confirm the spin-triplet natureof superconductivity and directly reveal the tunneling of half-quantum vorticesin candidate materials such as Sr2RuO4 and UTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[213.0, 2, 'e', 3]

UTe2
###Fractional magnetoresistance oscillations in spin-triplet superconducting rings|Gábor B. Halász###
(357282, 357284)
These fractional oscillations can unambiguously confirm the spin-triplet natureof superconductivity and directly reveal the tunneling of half-quantum vorticesin candidate materials such as Sr2RuO4 and UTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[221.0, 2, 'e', 3]

NiO/Pt
###Magnetic sensitivity distribution of Hall devices in antiferromagnetic switching experiments|F. Schreiber,H. Meer,C. Schmitt,R. Ramos,E. Saitoh,L. Baldrati,M. Kläui###
(357444, 357447)
 Using current-induced switching of antiferromagnetic NiO/Pt as anexample, we estimate the change in the spin Hall magnetoresistance signalassociated with switching events based on the domain switching patternsobserved via direct imaging.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

VSe2
###Spin valve effect in two-dimensional VSe$_2$ system|M. A. Jafari,M. Wawrzyniak-Adamczewska,S. Stagraczyński,A. Dyrdal,J. Barnaś###
(357619, 357621)
Spin valve effect in two-dimensional VSe2 system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

VSe2
###Spin valve effect in two-dimensional VSe$_2$ system|M. A. Jafari,M. Wawrzyniak-Adamczewska,S. Stagraczyński,A. Dyrdal,J. Barnaś###
(357633, 357635)
 Vanadium based dichalcogenides, VSe2, are two-dimensional materials inwhich magnetic Vanadium atoms are arranged in a hexagonal lattice and arecoupled ferromagnetically within the plane.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

VSe2
###Spin valve effect in two-dimensional VSe$_2$ system|M. A. Jafari,M. Wawrzyniak-Adamczewska,S. Stagraczyński,A. Dyrdal,J. Barnaś###
(357850, 357852)
 Detailed electronicstructure of VSe2 was obtained from DFT calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin valve effect in two-dimensional VSe$_2$ system|M. A. Jafari,M. Wawrzyniak-Adamczewska,S. Stagraczyński,A. Dyrdal,J. Barnaś###
(357894, 357894)
 Inaddition, we also analyze thermal and thermoelectric properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

VSe2
###Spin valve effect in two-dimensional VSe$_2$ system|M. A. Jafari,M. Wawrzyniak-Adamczewska,S. Stagraczyński,A. Dyrdal,J. Barnaś###
(357922, 357924)
 Both phases ofVSe2, denoted as H and T<missing VAR>, are considered.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Spin valve effect in two-dimensional VSe$_2$ system|M. A. Jafari,M. Wawrzyniak-Adamczewska,S. Stagraczyński,A. Dyrdal,J. Barnaś###
(357931, 357931)
 Both phases ofVSe2, denoted as H and T<missing VAR>, are considered.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnP
###Emergence of Intergranular Tunneling Dominated Negative Magnetoresistance in Helimagnetic Manganese Phosphide Nanorod Thin Films|B. Muchharla,R. P. Madhogaria,D. DeTellem,C. M. Hung,A. Chanda,A. T. Duong,P. T. Huy,M. T. Trinh,S. Cho,S. Witanachchi,M. H. Phan###
(358084, 358085)
 Herein, we report thetemperature and magnetic field dependent charge transport properties of ahighly crystalline MnP nanorod thin film over a wide temperature range (2-350K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 100, 'nm', 1],[117.0, 12, '%', 3],[125.0, 50, 'K', 3]

K
###Emergence of Intergranular Tunneling Dominated Negative Magnetoresistance in Helimagnetic Manganese Phosphide Nanorod Thin Films|B. Muchharla,R. P. Madhogaria,D. DeTellem,C. M. Hung,A. Chanda,A. T. Duong,P. T. Huy,M. T. Trinh,S. Cho,S. Witanachchi,M. H. Phan###
(358109, 358109)
 Herein, we report thetemperature and magnetic field dependent charge transport properties of ahighly crystalline MnP nanorod thin film over a wide temperature range (2-350K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 100, 'nm', 1],[93.0, 12, '%', 3],[101.0, 50, 'K', 3]

MnP
###Emergence of Intergranular Tunneling Dominated Negative Magnetoresistance in Helimagnetic Manganese Phosphide Nanorod Thin Films|B. Muchharla,R. P. Madhogaria,D. DeTellem,C. M. Hung,A. Chanda,A. T. Duong,P. T. Huy,M. T. Trinh,S. Cho,S. Witanachchi,M. H. Phan###
(358115, 358116)
 The MnP nanorod films of 100 nm thickness were grown on Si substrates at500 o<missing VAR>C using molecular beam epitaxy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 100, 'nm', 0],[86.0, 12, '%', 2],[94.0, 50, 'K', 2]

Si
###Emergence of Intergranular Tunneling Dominated Negative Magnetoresistance in Helimagnetic Manganese Phosphide Nanorod Thin Films|B. Muchharla,R. P. Madhogaria,D. DeTellem,C. M. Hung,A. Chanda,A. T. Duong,P. T. Huy,M. T. Trinh,S. Cho,S. Witanachchi,M. H. Phan###
(358133, 358133)
 The MnP nanorod films of 100 nm thickness were grown on Si substrates at500 o<missing VAR>C using molecular beam epitaxy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 100, 'nm', 0],[69.0, 12, '%', 2],[77.0, 50, 'K', 2]

C
###Emergence of Intergranular Tunneling Dominated Negative Magnetoresistance in Helimagnetic Manganese Phosphide Nanorod Thin Films|B. Muchharla,R. P. Madhogaria,D. DeTellem,C. M. Hung,A. Chanda,A. T. Duong,P. T. Huy,M. T. Trinh,S. Cho,S. Witanachchi,M. H. Phan###
(358143, 358143)
 The MnP nanorod films of 100 nm thickness were grown on Si substrates at500 o<missing VAR>C using molecular beam epitaxy.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 100, 'nm', 0],[59.0, 12, '%', 2],[67.0, 50, 'K', 2]

In
###Emergence of Intergranular Tunneling Dominated Negative Magnetoresistance in Helimagnetic Manganese Phosphide Nanorod Thin Films|B. Muchharla,R. P. Madhogaria,D. DeTellem,C. M. Hung,A. Chanda,A. T. Duong,P. T. Huy,M. T. Trinh,S. Cho,S. Witanachchi,M. H. Phan###
(358238, 358238)
 In thistemperature regime, the MR(H,T) dependence seems to show a magnetic fieldmanipulated phase coexistence.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 100, 'nm', 3],[36.0, 12, '%', 1],[28.0, 50, 'K', 1]

H
###Emergence of Intergranular Tunneling Dominated Negative Magnetoresistance in Helimagnetic Manganese Phosphide Nanorod Thin Films|B. Muchharla,R. P. Madhogaria,D. DeTellem,C. M. Hung,A. Chanda,A. T. Duong,P. T. Huy,M. T. Trinh,S. Cho,S. Witanachchi,M. H. Phan###
(358253, 358253)
 In thistemperature regime, the MR(H,T) dependence seems to show a magnetic fieldmanipulated phase coexistence.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 100, 'nm', 3],[51.0, 12, '%', 1],[43.0, 50, 'K', 1]

Pd3Bi2Se2
###Unusual Magnetotransport from two dimensional Dirac Fermions in Pd$_{3}$Bi$_{2}$Se$_{2}$|Shama,Dinesh Kumar,Goutam Sheet,Yogesh Singh###
(358363, 358368)
Unusual Magnetotransport from two dimensional Dirac Fermions in Pd3Bi2Se2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[230.0, 2, ',', 6],[275.0, 2, 'D', 7],[307.0, 2, 'D', 8]

Pd3Bi2Se2
###Unusual Magnetotransport from two dimensional Dirac Fermions in Pd$_{3}$Bi$_{2}$Se$_{2}$|Shama,Dinesh Kumar,Goutam Sheet,Yogesh Singh###
(358371, 358376)
 Pd3Bi2Se2 has been proposed to be topologically non-trivial innature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[222.0, 2, ',', 5],[267.0, 2, 'D', 6],[299.0, 2, 'D', 7]

Pd3Bi2Se2
###Unusual Magnetotransport from two dimensional Dirac Fermions in Pd$_{3}$Bi$_{2}$Se$_{2}$|Shama,Dinesh Kumar,Goutam Sheet,Yogesh Singh###
(358441, 358446)
 Wereport the growth and magneto-transport study of Pd3Bi2Se2 thinfilms, revealing for the first time the contribution of two-dimensional (2D)topological surface states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 2, ',', 3],[197.0, 2, 'D', 4],[229.0, 2, 'D', 5]

B2
###Unusual Magnetotransport from two dimensional Dirac Fermions in Pd$_{3}$Bi$_{2}$Se$_{2}$|Shama,Dinesh Kumar,Goutam Sheet,Yogesh Singh###
(358553, 358554)
 The transverse magnetoresistance changesfrom a semi-classical weak-field B2 dependence to a high-field Bdependence at a critical field Bstar.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 2, ',', 1],[89.0, 2, 'D', 2],[121.0, 2, 'D', 3]

B
###Unusual Magnetotransport from two dimensional Dirac Fermions in Pd$_{3}$Bi$_{2}$Se$_{2}$|Shama,Dinesh Kumar,Goutam Sheet,Yogesh Singh###
(358566, 358566)
 The transverse magnetoresistance changesfrom a semi-classical weak-field B2 dependence to a high-field Bdependence at a critical field Bstar.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 2, ',', 1],[77.0, 2, 'D', 2],[109.0, 2, 'D', 3]

B
###Unusual Magnetotransport from two dimensional Dirac Fermions in Pd$_{3}$Bi$_{2}$Se$_{2}$|Shama,Dinesh Kumar,Goutam Sheet,Yogesh Singh###
(358579, 358579)
 The transverse magnetoresistance changesfrom a semi-classical weak-field B2 dependence to a high-field Bdependence at a critical field Bstar.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 2, ',', 1],[64.0, 2, 'D', 2],[96.0, 2, 'D', 3]

B
###Unusual Magnetotransport from two dimensional Dirac Fermions in Pd$_{3}$Bi$_{2}$Se$_{2}$|Shama,Dinesh Kumar,Goutam Sheet,Yogesh Singh###
(358591, 358591)
 It is found that Bstar proptoT<missing VAR>2, which is expected from the Landau level splitting of a linear energydispersion.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 2, ',', 0],[52.0, 2, 'D', 1],[84.0, 2, 'D', 2]

In
###Unusual Magnetotransport from two dimensional Dirac Fermions in Pd$_{3}$Bi$_{2}$Se$_{2}$|Shama,Dinesh Kumar,Goutam Sheet,Yogesh Singh###
(358629, 358629)
 In addition, the magnetoconductivity shows signatures of 2D weakanti-localization (WAL).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 2, ',', 1],[14.0, 2, 'D', 0],[46.0, 2, 'D', 1]

W
###Unusual Magnetotransport from two dimensional Dirac Fermions in Pd$_{3}$Bi$_{2}$Se$_{2}$|Shama,Dinesh Kumar,Goutam Sheet,Yogesh Singh###
(358653, 358653)
 In addition, the magnetoconductivity shows signatures of 2D weakanti-localization (WAL).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 2, ',', 1],[10.0, 2, 'D', 0],[22.0, 2, 'D', 1]

Pd3Bi2Se2
###Unusual Magnetotransport from two dimensional Dirac Fermions in Pd$_{3}$Bi$_{2}$Se$_{2}$|Shama,Dinesh Kumar,Goutam Sheet,Yogesh Singh###
(358683, 358688)
 These novel magnetotransport signatures evince thepresence of 2D Dirac fermions in Pd3Bi2Se2 thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 2, ',', 2],[40.0, 2, 'D', 1],[8.0, 2, 'D', 0]

La2-xSr
###Magnetotransport in overdoped La$_{2-x}$Sr$_x$CuO$_4$: Effect of anisotropic scattering|Rui-Ying Mao,Da Wang,Qiang-Hua Wang###
(358709, 358713)
Magnetotransport in overdoped La2-xSrx<missing VAR>CuO4 Effect of anisotropic scattering.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

CuO4
###Magnetotransport in overdoped La$_{2-x}$Sr$_x$CuO$_4$: Effect of anisotropic scattering|Rui-Ying Mao,Da Wang,Qiang-Hua Wang###
(358715, 358717)
Magnetotransport in overdoped La2-xSrx<missing VAR>CuO4 Effect of anisotropic scattering.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La
###Magnetotransport in overdoped La$_{2-x}$Sr$_x$CuO$_4$: Effect of anisotropic scattering|Rui-Ying Mao,Da Wang,Qiang-Hua Wang###
(358767, 358767)
 We revisit the Hall effect and magnetoresistivity by incorporating theanisotropic scattering caused by apical oxygen vacancies in overdoped La-basedcuprates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magnetotransport in overdoped La$_{2-x}$Sr$_x$CuO$_4$: Effect of anisotropic scattering|Rui-Ying Mao,Da Wang,Qiang-Hua Wang###
(358835, 358835)
 In particular, we obtain theupturn of Hall coefficient R<missing VAR>H with decreasing temperature T<missing VAR>, the initialdrop of R<missing VAR>H in magnetic field B in all overdoped regimes, the linearresistivity rho versus B near the van Hove doping level, the temperaturedependence of the magnetoresistivity ratio, and the violation of Kohlers<missing VAR> law.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Magnetotransport in overdoped La$_{2-x}$Sr$_x$CuO$_4$: Effect of anisotropic scattering|Rui-Ying Mao,Da Wang,Qiang-Hua Wang###
(358856, 358856)
 In particular, we obtain theupturn of Hall coefficient R<missing VAR>H with decreasing temperature T<missing VAR>, the initialdrop of R<missing VAR>H in magnetic field B in all overdoped regimes, the linearresistivity rho versus B near the van Hove doping level, the temperaturedependence of the magnetoresistivity ratio, and the violation of Kohlers<missing VAR> law.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Magnetotransport in overdoped La$_{2-x}$Sr$_x$CuO$_4$: Effect of anisotropic scattering|Rui-Ying Mao,Da Wang,Qiang-Hua Wang###
(358877, 358877)
 In particular, we obtain theupturn of Hall coefficient R<missing VAR>H with decreasing temperature T<missing VAR>, the initialdrop of R<missing VAR>H in magnetic field B in all overdoped regimes, the linearresistivity rho versus B near the van Hove doping level, the temperaturedependence of the magnetoresistivity ratio, and the violation of Kohlers<missing VAR> law.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Magnetotransport in overdoped La$_{2-x}$Sr$_x$CuO$_4$: Effect of anisotropic scattering|Rui-Ying Mao,Da Wang,Qiang-Hua Wang###
(358885, 358885)
 In particular, we obtain theupturn of Hall coefficient R<missing VAR>H with decreasing temperature T<missing VAR>, the initialdrop of R<missing VAR>H in magnetic field B in all overdoped regimes, the linearresistivity rho versus B near the van Hove doping level, the temperaturedependence of the magnetoresistivity ratio, and the violation of Kohlers<missing VAR> law.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Magnetotransport in overdoped La$_{2-x}$Sr$_x$CuO$_4$: Effect of anisotropic scattering|Rui-Ying Mao,Da Wang,Qiang-Hua Wang###
(358907, 358907)
 In particular, we obtain theupturn of Hall coefficient R<missing VAR>H with decreasing temperature T<missing VAR>, the initialdrop of R<missing VAR>H in magnetic field B in all overdoped regimes, the linearresistivity rho versus B near the van Hove doping level, the temperaturedependence of the magnetoresistivity ratio, and the violation of Kohlers<missing VAR> law.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La2-xSr
###Magnetotransport in overdoped La$_{2-x}$Sr$_x$CuO$_4$: Effect of anisotropic scattering|Rui-Ying Mao,Da Wang,Qiang-Hua Wang###
(358978, 358982)
These results suggest that many of the anomalous transport behaviors inoverdoped La2-xSrx<missing VAR>CuO4 could actually be understood within the Fermiliquid picture.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

CuO4
###Magnetotransport in overdoped La$_{2-x}$Sr$_x$CuO$_4$: Effect of anisotropic scattering|Rui-Ying Mao,Da Wang,Qiang-Hua Wang###
(358984, 358986)
These results suggest that many of the anomalous transport behaviors inoverdoped La2-xSrx<missing VAR>CuO4 could actually be understood within the Fermiliquid picture.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Berry-curvature-induced linear magnetotransport in magnetic Weyl semimetals|Zetao Zhang,Yizhou Liu,Wenhui Duan###
(359123, 359123)
 In thiswork, we show that Berry curvature effect is a new mechanism dominating theLMT.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 66, 'out', 1],[58.0, 122, 'magnetic', 1],[206.0, 100, '%', 3]

Co3Sn2S2
###Berry-curvature-induced linear magnetotransport in magnetic Weyl semimetals|Zetao Zhang,Yizhou Liu,Wenhui Duan###
(359199, 359204)
 For typical magnetic Weyl semimetals Co3Sn2S2 andferromagnetic MnBi2Te4, Berry curvature induces LMT conductivitiesreaching orders of 104 and 102 rm Omega-1m<missing VAR>-1 per tesla,respectively, which are tunable through magnetization canting induced bymoderate magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 66, 'out', 1],[18.0, 122, 'magnetic', 1],[125.0, 100, '%', 1]

MnBi2Te4
###Berry-curvature-induced linear magnetotransport in magnetic Weyl semimetals|Zetao Zhang,Yizhou Liu,Wenhui Duan###
(359211, 359215)
 For typical magnetic Weyl semimetals Co3Sn2S2 andferromagnetic MnBi2Te4, Berry curvature induces LMT conductivitiesreaching orders of 104 and 102 rm Omega-1m<missing VAR>-1 per tesla,respectively, which are tunable through magnetization canting induced bymoderate magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 66, 'out', 1],[30.0, 122, 'magnetic', 1],[114.0, 100, '%', 1]

SrAl2Si2
###Large nonsaturating magnetoresistance, weak anti-localization and non-trivial topological states in SrAl$_2$Si$_2$|Sudip Malick,A. B. Sarkar,Antu Laha,M. Anas,V. K. Malik,Amit Agarwal,Z. Hossain,J. Nayak###
(359417, 359421)
Large nonsaturating magnetoresistance, weak anti-localization and non-trivial topological states in SrAl2Si2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.4,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 50, 'K', 2],[147.0, 459, '%', 4],[151.0, 2, 'K', 4],[154.0, 12, 'T', 4]

SrAl2Si2
###Large nonsaturating magnetoresistance, weak anti-localization and non-trivial topological states in SrAl$_2$Si$_2$|Sudip Malick,A. B. Sarkar,Antu Laha,M. Anas,V. K. Malik,Amit Agarwal,Z. Hossain,J. Nayak###
(359445, 359449)
 We explore the electronic and topological properties of single crystalSrAl2Si2 using magnetotransport experiments in conjunction withfirst-principle calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.4,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 50, 'K', 1],[119.0, 459, '%', 3],[123.0, 2, 'K', 3],[126.0, 12, 'T', 3]

SrAl2Si2
###Large nonsaturating magnetoresistance, weak anti-localization and non-trivial topological states in SrAl$_2$Si$_2$|Sudip Malick,A. B. Sarkar,Antu Laha,M. Anas,V. K. Malik,Amit Agarwal,Z. Hossain,J. Nayak###
(359646, 359650)
 Our Hall resistivity measurements confirm the presenceof two types of charge carriers in SrAl2Si2, with low carrier density.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.4,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 50, 'K', 4],[78.0, 459, '%', 2],[74.0, 2, 'K', 2],[71.0, 12, 'T', 2]

(CISS)
###Giant chirality-induced spin-selectivity of polarons|Dan Klein,Karen Michaeli###
(359695, 359700)
 The chirality-induced spin selectivity (CISS) effect gives rise to stronglyspin-dependent transport through many organic molecules and structures.
Featurization successful!
0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CISS
###Giant chirality-induced spin-selectivity of polarons|Dan Klein,Karen Michaeli###
(359913, 359916)
 This work showsthat a new energy scale for CISS emerges for currents carried by polarons,i.e.
Featurization terminated normally.
0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Giant chirality-induced spin-selectivity of polarons|Dan Klein,Karen Michaeli###
(359955, 359955)
 In particular, wefound that polaron fluctuations play a crucial role in the two manifestationsof CISS in transport measurements -- the spin-dependent transmissionprobability through the system and asymmetric magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CISS
###Giant chirality-induced spin-selectivity of polarons|Dan Klein,Karen Michaeli###
(359990, 359993)
 In particular, wefound that polaron fluctuations play a crucial role in the two manifestationsof CISS in transport measurements -- the spin-dependent transmissionprobability through the system and asymmetric magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CaBi2
###Possible origin of extremely large magnetoresistance in the topological insulator CaBi2 single crystal|Yuzhe Ma,Yulong Wang,Gang Wang###
(360056, 360058)
Possible origin of extremely large magnetoresistance in the topological insulator CaBi2 single crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 2, 'K', 1],[223.0, 15000, '%', 5],[227.0, 3, 'K', 5],[230.0, 12, 'T', 5]

CaBi2
###Possible origin of extremely large magnetoresistance in the topological insulator CaBi2 single crystal|Yuzhe Ma,Yulong Wang,Gang Wang###
(360065, 360067)
 CaBi2 has been experimentally found to be a superconductor with a transitiontemperature of 2 K and identified as a topological insulator via spin- andangle-resolved photoemission spectroscopy, which makes it a possible platformto study the interplay between superconductivity and topology.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 2, 'K', 0],[214.0, 15000, '%', 4],[218.0, 3, 'K', 4],[221.0, 12, 'T', 4]

CaBi2
###Possible origin of extremely large magnetoresistance in the topological insulator CaBi2 single crystal|Yuzhe Ma,Yulong Wang,Gang Wang###
(360169, 360171)
 But the detailedtransport properties for CaBi2 single crystal remain unexplored in experiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 2, 'K', 1],[110.0, 15000, '%', 3],[114.0, 3, 'K', 3],[117.0, 12, 'T', 3]

CaBi2
###Possible origin of extremely large magnetoresistance in the topological insulator CaBi2 single crystal|Yuzhe Ma,Yulong Wang,Gang Wang###
(360206, 360208)
Here, we systematically studied the magneto-transport properties of CaBi2single crystal grown by a flux method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 2, 'K', 2],[73.0, 15000, '%', 2],[77.0, 3, 'K', 2],[80.0, 12, 'T', 2]

CaBi2
###Possible origin of extremely large magnetoresistance in the topological insulator CaBi2 single crystal|Yuzhe Ma,Yulong Wang,Gang Wang###
(360226, 360228)
 CaBi2 shows a magnetic-field-inducedupturn behavior with a plateau in resistivity at low temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 2, 'K', 3],[53.0, 15000, '%', 1],[57.0, 3, 'K', 1],[60.0, 12, 'T', 1]

CsV3Sb5
###Nonreciprocal Charge Transport in Topological Kagome Superconductor CsV$_{3}$Sb$_{5}$|Yueshen Wu,Qi Wang,Xiang Zhou,Jinghui Wang,Peng Dong,Jiadian He,Yifan Ding,Bolun Teng,Yiwen Zhang,Yifei Li,Chenglong Zhao,Hongti Zhang,Jianpeng Liu,Yanpeng Qi,Kenji Watanabe,Takashi Taniguchi,Jun Li###
(360406, 360410)
Nonreciprocal Charge Transport in Topological Kagome Superconductor CsV3Sb5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5555555555555556,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CsV3Sb5
###Nonreciprocal Charge Transport in Topological Kagome Superconductor CsV$_{3}$Sb$_{5}$|Yueshen Wu,Qi Wang,Xiang Zhou,Jinghui Wang,Peng Dong,Jiadian He,Yifan Ding,Bolun Teng,Yiwen Zhang,Yifei Li,Chenglong Zhao,Hongti Zhang,Jianpeng Liu,Yanpeng Qi,Kenji Watanabe,Takashi Taniguchi,Jun Li###
(360483, 360487)
 Here, we report a strongnonreciprocal transport phenomenon in superconducting CsV3Sb5 thinflakes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5555555555555556,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CsV3Sb5
###Nonreciprocal Charge Transport in Topological Kagome Superconductor CsV$_{3}$Sb$_{5}$|Yueshen Wu,Qi Wang,Xiang Zhou,Jinghui Wang,Peng Dong,Jiadian He,Yifan Ding,Bolun Teng,Yiwen Zhang,Yifei Li,Chenglong Zhao,Hongti Zhang,Jianpeng Liu,Yanpeng Qi,Kenji Watanabe,Takashi Taniguchi,Jun Li###
(360644, 360648)
 Thenonreciprocity suggests a strong asymmetry in CsV3Sb5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5555555555555556,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CsV3Sb5
###Nonreciprocal Charge Transport in Topological Kagome Superconductor CsV$_{3}$Sb$_{5}$|Yueshen Wu,Qi Wang,Xiang Zhou,Jinghui Wang,Peng Dong,Jiadian He,Yifan Ding,Bolun Teng,Yiwen Zhang,Yifei Li,Chenglong Zhao,Hongti Zhang,Jianpeng Liu,Yanpeng Qi,Kenji Watanabe,Takashi Taniguchi,Jun Li###
(360668, 360672)
 Thecentrosymmetric structure and symmetric electronic phases in CsV3Sb5can hardly induce the distinct nonreciprocal transport phenomenon, which couldbe correlated to a symmetry breaking from an unconventional superconductingorder parameter symmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5555555555555556,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr2Ge2Te6
###Spin filtering effect in intrinsic 2D magnetic semiconductor Cr2Ge2Te6|Honglei Feng,Gang Shi,Dayu Yan,Yong Li,Youguo Shi,Yang Xu,Peng Xiong,Yongqing Li###
(360748, 360753)
Spin filtering effect in intrinsic 2D magnetic semiconductor Cr2Ge2Te6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 2, 'D', 0],[245.0, 2, 'D', 5]

W
###Spin filtering effect in intrinsic 2D magnetic semiconductor Cr2Ge2Te6|Honglei Feng,Gang Shi,Dayu Yan,Yong Li,Youguo Shi,Yang Xu,Peng Xiong,Yongqing Li###
(360766, 360766)
 All van der Waals (vdW) Fe3GeTe2/Cr2Ge2Te6/graphite magnetic heterojunctionshave been fabricated via mechanical exfoliation and stacking, and theirmagnetotransport properties are studied in detail.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 2, 'D', 1],[232.0, 2, 'D', 4]

Fe3GeTe2/Cr2Ge2Te6
###Spin filtering effect in intrinsic 2D magnetic semiconductor Cr2Ge2Te6|Honglei Feng,Gang Shi,Dayu Yan,Yong Li,Youguo Shi,Yang Xu,Peng Xiong,Yongqing Li###
(360769, 360780)
 All van der Waals (vdW) Fe3GeTe2/Cr2Ge2Te6/graphite magnetic heterojunctionshave been fabricated via mechanical exfoliation and stacking, and theirmagnetotransport properties are studied in detail.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[27.0, 2, 'D', 1],[218.0, 2, 'D', 4]

At
###Spin filtering effect in intrinsic 2D magnetic semiconductor Cr2Ge2Te6|Honglei Feng,Gang Shi,Dayu Yan,Yong Li,Youguo Shi,Yang Xu,Peng Xiong,Yongqing Li###
(360824, 360824)
 At low bias voltages largenegative junction magnetoresistances have been observed and are attributed tospin-conserving tunneling transport across the insulating Cr2Ge2Te6 layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 2, 'D', 2],[174.0, 2, 'D', 3]

Cr2Ge2Te6
###Spin filtering effect in intrinsic 2D magnetic semiconductor Cr2Ge2Te6|Honglei Feng,Gang Shi,Dayu Yan,Yong Li,Youguo Shi,Yang Xu,Peng Xiong,Yongqing Li###
(360870, 360875)
 At low bias voltages largenegative junction magnetoresistances have been observed and are attributed tospin-conserving tunneling transport across the insulating Cr2Ge2Te6 layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 2, 'D', 2],[123.0, 2, 'D', 3]

Cr2Ge2Te6
###Spin filtering effect in intrinsic 2D magnetic semiconductor Cr2Ge2Te6|Honglei Feng,Gang Shi,Dayu Yan,Yong Li,Youguo Shi,Yang Xu,Peng Xiong,Yongqing Li###
(360943, 360948)
 Thenegative sign of the tunneling magnetoresistance (TMR) suggests that the bottomof conduction band in Cr2Ge2Te6 belongs to minority spins, opposite to thefindings of some first-principles calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[201.0, 2, 'D', 4],[50.0, 2, 'D', 1]

W
###Spin filtering effect in intrinsic 2D magnetic semiconductor Cr2Ge2Te6|Honglei Feng,Gang Shi,Dayu Yan,Yong Li,Youguo Shi,Yang Xu,Peng Xiong,Yongqing Li###
(360990, 360990)
 This work shows that the vdWheterostructures based on 2D magnetic insulators are a valuable platform togain further insight into spin polarized tunneling transport, which is thebasis for pursuing high performance spintronic devices and a large variety ofquantum phenomena.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[248.0, 2, 'D', 5],[8.0, 2, 'D', 0]

Nb
###Perpendicular magnetic anisotropy, tunneling magnetoresistance and spin-transfer torque effect in magnetic tunnel junctions with Nb layers|Bowei Zhou,Pravin Khanal,Onri Jay Benally,Deyuan Lyu,Daniel B. Gopman,Arthur Enriquez,Ali Habiboglu,Kennedy Warrilow,Jian-Ping Wang,Wei-Gang Wang###
(361108, 361108)
Perpendicular magnetic anisotropy, tunneling magnetoresistance and spin-transfer torque effect in magnetic tunnel junctions with Nb layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 1.85, 'mJ', 4],[193.0, 120, '%', 6],[217.0, 0.011, 'determined', 6]

Nb
###Perpendicular magnetic anisotropy, tunneling magnetoresistance and spin-transfer torque effect in magnetic tunnel junctions with Nb layers|Bowei Zhou,Pravin Khanal,Onri Jay Benally,Deyuan Lyu,Daniel B. Gopman,Arthur Enriquez,Ali Habiboglu,Kennedy Warrilow,Jian-Ping Wang,Wei-Gang Wang###
(361113, 361113)
 Nb and its compounds are widely used in quantum computing due to their highsuperconducting transition temperatures and high critical fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 1.85, 'mJ', 3],[188.0, 120, '%', 5],[212.0, 0.011, 'determined', 5]

Nb
###Perpendicular magnetic anisotropy, tunneling magnetoresistance and spin-transfer torque effect in magnetic tunnel junctions with Nb layers|Bowei Zhou,Pravin Khanal,Onri Jay Benally,Deyuan Lyu,Daniel B. Gopman,Arthur Enriquez,Ali Habiboglu,Kennedy Warrilow,Jian-Ping Wang,Wei-Gang Wang###
(361207, 361207)
 Here we report the study of magnetic tunnel junctionswith Nb as the heavy metal layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 1.85, 'mJ', 1],[94.0, 120, '%', 3],[118.0, 0.011, 'determined', 3]

Nb/CoFeB/MgO
###Perpendicular magnetic anisotropy, tunneling magnetoresistance and spin-transfer torque effect in magnetic tunnel junctions with Nb layers|Bowei Zhou,Pravin Khanal,Onri Jay Benally,Deyuan Lyu,Daniel B. Gopman,Arthur Enriquez,Ali Habiboglu,Kennedy Warrilow,Jian-Ping Wang,Wei-Gang Wang###
(361247, 361254)
 An interfacial perpendicular magneticanisotropy energy density of 1.85 mJ/m<missing VAR>2 was obtained in Nb/CoFeB/MgOheterostructures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[11.0, 1.85, 'mJ', 0],[47.0, 120, '%', 2],[71.0, 0.011, 'determined', 2]

In
###Perpendicular magnetic anisotropy, tunneling magnetoresistance and spin-transfer torque effect in magnetic tunnel junctions with Nb layers|Bowei Zhou,Pravin Khanal,Onri Jay Benally,Deyuan Lyu,Daniel B. Gopman,Arthur Enriquez,Ali Habiboglu,Kennedy Warrilow,Jian-Ping Wang,Wei-Gang Wang###
(361334, 361334)
 In addition,spin-transfer torque switching has also been successfully observed in thesejunctions with a quasistatic switching current density of 7.3105 A/cm2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 1.85, 'mJ', 3],[33.0, 120, '%', 1],[9.0, 0.011, 'determined', 1]

CsV3Sb5
###Linear nonsaturating magnetoresistance in kagome superconductor CsV3Sb5 thin flakes|Xinjian Wei,Congkuan Tian,Hang Cui,Yongkai Li,Shaobo Liu,Ya Feng,Jian Cui,Yuanjun Song,Zhiwei Wang,Jian-Hao Chen###
(361409, 361413)
Linear nonsaturating magnetoresistance in kagome superconductor CsV3Sb5 thin flakes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5555555555555556,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###Linear nonsaturating magnetoresistance in kagome superconductor CsV3Sb5 thin flakes|Xinjian Wei,Congkuan Tian,Hang Cui,Yongkai Li,Shaobo Liu,Ya Feng,Jian Cui,Yuanjun Song,Zhiwei Wang,Jian-Hao Chen###
(361494, 361494)
 Linear nonsaturating magnetoresistance (LMR) represents a class of anomalousresistivity response to external magnetic field that has been observed in avariety of materials including but not limited to topological semi-metals,high-Tc superconductors and materials with charge/spin density wave (CD<missing VAR>W/SD<missing VAR>W)orders.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Linear nonsaturating magnetoresistance in kagome superconductor CsV3Sb5 thin flakes|Xinjian Wei,Congkuan Tian,Hang Cui,Yongkai Li,Shaobo Liu,Ya Feng,Jian Cui,Yuanjun Song,Zhiwei Wang,Jian-Hao Chen###
(361513, 361513)
 Linear nonsaturating magnetoresistance (LMR) represents a class of anomalousresistivity response to external magnetic field that has been observed in avariety of materials including but not limited to topological semi-metals,high-Tc superconductors and materials with charge/spin density wave (CD<missing VAR>W/SD<missing VAR>W)orders.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W/S
###Linear nonsaturating magnetoresistance in kagome superconductor CsV3Sb5 thin flakes|Xinjian Wei,Congkuan Tian,Hang Cui,Yongkai Li,Shaobo Liu,Ya Feng,Jian Cui,Yuanjun Song,Zhiwei Wang,Jian-Hao Chen###
(361515, 361517)
 Linear nonsaturating magnetoresistance (LMR) represents a class of anomalousresistivity response to external magnetic field that has been observed in avariety of materials including but not limited to topological semi-metals,high-Tc superconductors and materials with charge/spin density wave (CD<missing VAR>W/SD<missing VAR>W)orders.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

W
###Linear nonsaturating magnetoresistance in kagome superconductor CsV3Sb5 thin flakes|Xinjian Wei,Congkuan Tian,Hang Cui,Yongkai Li,Shaobo Liu,Ya Feng,Jian Cui,Yuanjun Song,Zhiwei Wang,Jian-Hao Chen###
(361519, 361519)
 Linear nonsaturating magnetoresistance (LMR) represents a class of anomalousresistivity response to external magnetic field that has been observed in avariety of materials including but not limited to topological semi-metals,high-Tc superconductors and materials with charge/spin density wave (CD<missing VAR>W/SD<missing VAR>W)orders.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Linear nonsaturating magnetoresistance in kagome superconductor CsV3Sb5 thin flakes|Xinjian Wei,Congkuan Tian,Hang Cui,Yongkai Li,Shaobo Liu,Ya Feng,Jian Cui,Yuanjun Song,Zhiwei Wang,Jian-Hao Chen###
(361553, 361553)
 Here we report the observation of LMR in layered kagome superconductorand CD<missing VAR>W material CsV3Sb5 thin flakes, as well as the dimensional crossover andtemperature (T) crossover of such LMR.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Linear nonsaturating magnetoresistance in kagome superconductor CsV3Sb5 thin flakes|Xinjian Wei,Congkuan Tian,Hang Cui,Yongkai Li,Shaobo Liu,Ya Feng,Jian Cui,Yuanjun Song,Zhiwei Wang,Jian-Hao Chen###
(361555, 361555)
 Here we report the observation of LMR in layered kagome superconductorand CD<missing VAR>W material CsV3Sb5 thin flakes, as well as the dimensional crossover andtemperature (T) crossover of such LMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CsV3Sb5
###Linear nonsaturating magnetoresistance in kagome superconductor CsV3Sb5 thin flakes|Xinjian Wei,Congkuan Tian,Hang Cui,Yongkai Li,Shaobo Liu,Ya Feng,Jian Cui,Yuanjun Song,Zhiwei Wang,Jian-Hao Chen###
(361559, 361563)
 Here we report the observation of LMR in layered kagome superconductorand CD<missing VAR>W material CsV3Sb5 thin flakes, as well as the dimensional crossover andtemperature (T) crossover of such LMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5555555555555556,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CsV3Sb5
###Linear nonsaturating magnetoresistance in kagome superconductor CsV3Sb5 thin flakes|Xinjian Wei,Congkuan Tian,Hang Cui,Yongkai Li,Shaobo Liu,Ya Feng,Jian Cui,Yuanjun Song,Zhiwei Wang,Jian-Hao Chen###
(361609, 361613)
 Specifically, in ultrathin CsV3Sb5crystals, the magnetoresistance (MR) exhibits a crossover from LMR at low T<missing VAR> toquadratic B dependence above the CD<missing VAR>W transition temperature; the MR alsoexhibits a crossover from LMR to sublinear MR for sample thickness at around20 nm at low T<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5555555555555556,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Linear nonsaturating magnetoresistance in kagome superconductor CsV3Sb5 thin flakes|Xinjian Wei,Congkuan Tian,Hang Cui,Yongkai Li,Shaobo Liu,Ya Feng,Jian Cui,Yuanjun Song,Zhiwei Wang,Jian-Hao Chen###
(361651, 361651)
 Specifically, in ultrathin CsV3Sb5crystals, the magnetoresistance (MR) exhibits a crossover from LMR at low T<missing VAR> toquadratic B dependence above the CD<missing VAR>W transition temperature; the MR alsoexhibits a crossover from LMR to sublinear MR for sample thickness at around20 nm at low T<missing VAR>.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Linear nonsaturating magnetoresistance in kagome superconductor CsV3Sb5 thin flakes|Xinjian Wei,Congkuan Tian,Hang Cui,Yongkai Li,Shaobo Liu,Ya Feng,Jian Cui,Yuanjun Song,Zhiwei Wang,Jian-Hao Chen###
(361659, 361659)
 Specifically, in ultrathin CsV3Sb5crystals, the magnetoresistance (MR) exhibits a crossover from LMR at low T<missing VAR> toquadratic B dependence above the CD<missing VAR>W transition temperature; the MR alsoexhibits a crossover from LMR to sublinear MR for sample thickness at around20 nm at low T<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Linear nonsaturating magnetoresistance in kagome superconductor CsV3Sb5 thin flakes|Xinjian Wei,Congkuan Tian,Hang Cui,Yongkai Li,Shaobo Liu,Ya Feng,Jian Cui,Yuanjun Song,Zhiwei Wang,Jian-Hao Chen###
(361661, 361661)
 Specifically, in ultrathin CsV3Sb5crystals, the magnetoresistance (MR) exhibits a crossover from LMR at low T<missing VAR> toquadratic B dependence above the CD<missing VAR>W transition temperature; the MR alsoexhibits a crossover from LMR to sublinear MR for sample thickness at around20 nm at low T<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Linear nonsaturating magnetoresistance in kagome superconductor CsV3Sb5 thin flakes|Xinjian Wei,Congkuan Tian,Hang Cui,Yongkai Li,Shaobo Liu,Ya Feng,Jian Cui,Yuanjun Song,Zhiwei Wang,Jian-Hao Chen###
(361755, 361755)
 We discuss several possible origins of the LMR and attributethe effect to two-dimensional (2D) CD<missing VAR>W fluctuations.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Linear nonsaturating magnetoresistance in kagome superconductor CsV3Sb5 thin flakes|Xinjian Wei,Congkuan Tian,Hang Cui,Yongkai Li,Shaobo Liu,Ya Feng,Jian Cui,Yuanjun Song,Zhiwei Wang,Jian-Hao Chen###
(361757, 361757)
 We discuss several possible origins of the LMR and attributethe effect to two-dimensional (2D) CD<missing VAR>W fluctuations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoPS3
###Pressure-Induced Insulator-to-Metal Transition in van der Waals compound CoPS$_3$|Takahiro Matsuoka,Rahul Rao,Michael A. Susner,Benjamin S. Conner,Dongzhou Zhang,David Mandrus###
(362131, 362134)
Pressure-Induced Insulator-to-Metal Transition in van der Waals compound CoPS3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0.6,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 7, 'GPa', 2],[124.0, 2.9, '%', 2]

CoPS3
###Pressure-Induced Insulator-to-Metal Transition in van der Waals compound CoPS$_3$|Takahiro Matsuoka,Rahul Rao,Michael A. Susner,Benjamin S. Conner,Dongzhou Zhang,David Mandrus###
(362180, 362183)
 We have studied the insulator-to-metal transition and crystal structureevolution under high pressure in the van der Waals compound CoPS3 throughtextitin-situ electrical resistance, Hall resistance, magnetoresistance,X<missing VAR>-ray diffraction, and Raman scattering measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0.6,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 7, 'GPa', 1],[75.0, 2.9, '%', 1]

CoPS3
###Pressure-Induced Insulator-to-Metal Transition in van der Waals compound CoPS$_3$|Takahiro Matsuoka,Rahul Rao,Michael A. Susner,Benjamin S. Conner,Dongzhou Zhang,David Mandrus###
(362223, 362226)
 CoPS3 exhibits aC2/m<missing VAR> rightarrow Poverline3 structural transformation at 7 GPaaccompanied by a 2.9% reduction in the volume per formula unit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0.6,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 7, 'GPa', 0],[32.0, 2.9, '%', 0]

C2
###Pressure-Induced Insulator-to-Metal Transition in van der Waals compound CoPS$_3$|Takahiro Matsuoka,Rahul Rao,Michael A. Susner,Benjamin S. Conner,Dongzhou Zhang,David Mandrus###
(362233, 362234)
 CoPS3 exhibits aC2/m<missing VAR> rightarrow Poverline3 structural transformation at 7 GPaaccompanied by a 2.9% reduction in the volume per formula unit.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 7, 'GPa', 0],[24.0, 2.9, '%', 0]

P
###Pressure-Induced Insulator-to-Metal Transition in van der Waals compound CoPS$_3$|Takahiro Matsuoka,Rahul Rao,Michael A. Susner,Benjamin S. Conner,Dongzhou Zhang,David Mandrus###
(362240, 362240)
 CoPS3 exhibits aC2/m<missing VAR> rightarrow Poverline3 structural transformation at 7 GPaaccompanied by a 2.9% reduction in the volume per formula unit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 7, 'GPa', 0],[18.0, 2.9, '%', 0]

CoPS3
###Pressure-Induced Insulator-to-Metal Transition in van der Waals compound CoPS$_3$|Takahiro Matsuoka,Rahul Rao,Michael A. Susner,Benjamin S. Conner,Dongzhou Zhang,David Mandrus###
(362293, 362296)
Concomitantly, the electrical resistance decreases significantly, and CoPS3becomes metallic.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0.6,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 7, 'GPa', 1],[35.0, 2.9, '%', 1]

CoPS3
###Pressure-Induced Insulator-to-Metal Transition in van der Waals compound CoPS$_3$|Takahiro Matsuoka,Rahul Rao,Michael A. Susner,Benjamin S. Conner,Dongzhou Zhang,David Mandrus###
(362308, 362311)
 This metallic CoPS3 is a hole-dominant conductor withmultiple conduction bands.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0.6,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 7, 'GPa', 2],[50.0, 2.9, '%', 2]

CoPS3
###Pressure-Induced Insulator-to-Metal Transition in van der Waals compound CoPS$_3$|Takahiro Matsuoka,Rahul Rao,Michael A. Susner,Benjamin S. Conner,Dongzhou Zhang,David Mandrus###
(362391, 362394)
 Thus, the metallic CoPS3 possiblypossesses an inhomogeneous magnetic moment distribution and short-rangemagnetic ordering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0.6,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 7, 'GPa', 4],[133.0, 2.9, '%', 4]

PS3
###Pressure-Induced Insulator-to-Metal Transition in van der Waals compound CoPS$_3$|Takahiro Matsuoka,Rahul Rao,Michael A. Susner,Benjamin S. Conner,Dongzhou Zhang,David Mandrus###
(362441, 362443)
 This report summarizes the comprehensive phase diagram ofM<missing VAR>PS3 (M<missing VAR>  V, Mn, Fe, Co, Ni, and Cd) that metalize under pressures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[192.0, 7, 'GPa', 5],[183.0, 2.9, '%', 5]

V
###Pressure-Induced Insulator-to-Metal Transition in van der Waals compound CoPS$_3$|Takahiro Matsuoka,Rahul Rao,Michael A. Susner,Benjamin S. Conner,Dongzhou Zhang,David Mandrus###
(362449, 362449)
 This report summarizes the comprehensive phase diagram ofM<missing VAR>PS3 (M<missing VAR>  V, Mn, Fe, Co, Ni, and Cd) that metalize under pressures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[200.0, 7, 'GPa', 5],[191.0, 2.9, '%', 5]

Mn
###Pressure-Induced Insulator-to-Metal Transition in van der Waals compound CoPS$_3$|Takahiro Matsuoka,Rahul Rao,Michael A. Susner,Benjamin S. Conner,Dongzhou Zhang,David Mandrus###
(362452, 362452)
 This report summarizes the comprehensive phase diagram ofM<missing VAR>PS3 (M<missing VAR>  V, Mn, Fe, Co, Ni, and Cd) that metalize under pressures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[203.0, 7, 'GPa', 5],[194.0, 2.9, '%', 5]

Fe
###Pressure-Induced Insulator-to-Metal Transition in van der Waals compound CoPS$_3$|Takahiro Matsuoka,Rahul Rao,Michael A. Susner,Benjamin S. Conner,Dongzhou Zhang,David Mandrus###
(362455, 362455)
 This report summarizes the comprehensive phase diagram ofM<missing VAR>PS3 (M<missing VAR>  V, Mn, Fe, Co, Ni, and Cd) that metalize under pressures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[206.0, 7, 'GPa', 5],[197.0, 2.9, '%', 5]

Co
###Pressure-Induced Insulator-to-Metal Transition in van der Waals compound CoPS$_3$|Takahiro Matsuoka,Rahul Rao,Michael A. Susner,Benjamin S. Conner,Dongzhou Zhang,David Mandrus###
(362458, 362458)
 This report summarizes the comprehensive phase diagram ofM<missing VAR>PS3 (M<missing VAR>  V, Mn, Fe, Co, Ni, and Cd) that metalize under pressures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[209.0, 7, 'GPa', 5],[200.0, 2.9, '%', 5]

Ni
###Pressure-Induced Insulator-to-Metal Transition in van der Waals compound CoPS$_3$|Takahiro Matsuoka,Rahul Rao,Michael A. Susner,Benjamin S. Conner,Dongzhou Zhang,David Mandrus###
(362461, 362461)
 This report summarizes the comprehensive phase diagram ofM<missing VAR>PS3 (M<missing VAR>  V, Mn, Fe, Co, Ni, and Cd) that metalize under pressures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[212.0, 7, 'GPa', 5],[203.0, 2.9, '%', 5]

Cd
###Pressure-Induced Insulator-to-Metal Transition in van der Waals compound CoPS$_3$|Takahiro Matsuoka,Rahul Rao,Michael A. Susner,Benjamin S. Conner,Dongzhou Zhang,David Mandrus###
(362466, 362466)
 This report summarizes the comprehensive phase diagram ofM<missing VAR>PS3 (M<missing VAR>  V, Mn, Fe, Co, Ni, and Cd) that metalize under pressures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[217.0, 7, 'GPa', 5],[208.0, 2.9, '%', 5]

Fe3GaTe2
###Tremendous tunneling magnetoresistance effects based on van der Waals room-temperature ferromagnet Fe$_3$GaTe$_2$ with highly spin-polarized Fermi surfaces|Xinlu Li,Meng Zhu,Yaoyuan Wang,Fanxing Zheng,Jianting Dong,Ye Zhou,Long You,Jia Zhang###
(362510, 362514)
Tremendous tunneling magnetoresistance effects based on van der Waals room-temperature ferromagnet Fe3GaTe2 with highly spin-polarized Fermi surfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Tremendous tunneling magnetoresistance effects based on van der Waals room-temperature ferromagnet Fe$_3$GaTe$_2$ with highly spin-polarized Fermi surfaces|Xinlu Li,Meng Zhu,Yaoyuan Wang,Fanxing Zheng,Jianting Dong,Ye Zhou,Long You,Jia Zhang###
(362540, 362540)
 Recently, van der Waals (vdW) magnetic heterostructures have receivedincreasing research attention in spintronics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Tremendous tunneling magnetoresistance effects based on van der Waals room-temperature ferromagnet Fe$_3$GaTe$_2$ with highly spin-polarized Fermi surfaces|Xinlu Li,Meng Zhu,Yaoyuan Wang,Fanxing Zheng,Jianting Dong,Ye Zhou,Long You,Jia Zhang###
(362584, 362584)
 However, the lack ofroom-temperature magnetic order of vdW material has largely impedes itsdevelopment in practical spintronics devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Tremendous tunneling magnetoresistance effects based on van der Waals room-temperature ferromagnet Fe$_3$GaTe$_2$ with highly spin-polarized Fermi surfaces|Xinlu Li,Meng Zhu,Yaoyuan Wang,Fanxing Zheng,Jianting Dong,Ye Zhou,Long You,Jia Zhang###
(362620, 362620)
 Inspired by the recentlydiscovered vdW ferromagnet Fe3GaTe2, which has been shown to have magneticorder above room temperature and sizable perpendicular magnetic anisotropy, weinvestigate the basic electronic structure and magnetic properties of Fe3GaTe2as well as tunneling magnetoresistance effect in magnetic tunnel junctions(MTJs) with structure of Fe3GaTe2/Insulator/Fe3GaTe2 by using first-principlescalculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe3GaTe2
###Tremendous tunneling magnetoresistance effects based on van der Waals room-temperature ferromagnet Fe$_3$GaTe$_2$ with highly spin-polarized Fermi surfaces|Xinlu Li,Meng Zhu,Yaoyuan Wang,Fanxing Zheng,Jianting Dong,Ye Zhou,Long You,Jia Zhang###
(362624, 362628)
 Inspired by the recentlydiscovered vdW ferromagnet Fe3GaTe2, which has been shown to have magneticorder above room temperature and sizable perpendicular magnetic anisotropy, weinvestigate the basic electronic structure and magnetic properties of Fe3GaTe2as well as tunneling magnetoresistance effect in magnetic tunnel junctions(MTJs) with structure of Fe3GaTe2/Insulator/Fe3GaTe2 by using first-principlescalculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe3GaTe2
###Tremendous tunneling magnetoresistance effects based on van der Waals room-temperature ferromagnet Fe$_3$GaTe$_2$ with highly spin-polarized Fermi surfaces|Xinlu Li,Meng Zhu,Yaoyuan Wang,Fanxing Zheng,Jianting Dong,Ye Zhou,Long You,Jia Zhang###
(362686, 362690)
 Inspired by the recentlydiscovered vdW ferromagnet Fe3GaTe2, which has been shown to have magneticorder above room temperature and sizable perpendicular magnetic anisotropy, weinvestigate the basic electronic structure and magnetic properties of Fe3GaTe2as well as tunneling magnetoresistance effect in magnetic tunnel junctions(MTJs) with structure of Fe3GaTe2/Insulator/Fe3GaTe2 by using first-principlescalculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe3GaTe2
###Tremendous tunneling magnetoresistance effects based on van der Waals room-temperature ferromagnet Fe$_3$GaTe$_2$ with highly spin-polarized Fermi surfaces|Xinlu Li,Meng Zhu,Yaoyuan Wang,Fanxing Zheng,Jianting Dong,Ye Zhou,Long You,Jia Zhang###
(362726, 362730)
 Inspired by the recentlydiscovered vdW ferromagnet Fe3GaTe2, which has been shown to have magneticorder above room temperature and sizable perpendicular magnetic anisotropy, weinvestigate the basic electronic structure and magnetic properties of Fe3GaTe2as well as tunneling magnetoresistance effect in magnetic tunnel junctions(MTJs) with structure of Fe3GaTe2/Insulator/Fe3GaTe2 by using first-principlescalculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe3GaTe2
###Tremendous tunneling magnetoresistance effects based on van der Waals room-temperature ferromagnet Fe$_3$GaTe$_2$ with highly spin-polarized Fermi surfaces|Xinlu Li,Meng Zhu,Yaoyuan Wang,Fanxing Zheng,Jianting Dong,Ye Zhou,Long You,Jia Zhang###
(362734, 362738)
 Inspired by the recentlydiscovered vdW ferromagnet Fe3GaTe2, which has been shown to have magneticorder above room temperature and sizable perpendicular magnetic anisotropy, weinvestigate the basic electronic structure and magnetic properties of Fe3GaTe2as well as tunneling magnetoresistance effect in magnetic tunnel junctions(MTJs) with structure of Fe3GaTe2/Insulator/Fe3GaTe2 by using first-principlescalculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe3GaTe2
###Tremendous tunneling magnetoresistance effects based on van der Waals room-temperature ferromagnet Fe$_3$GaTe$_2$ with highly spin-polarized Fermi surfaces|Xinlu Li,Meng Zhu,Yaoyuan Wang,Fanxing Zheng,Jianting Dong,Ye Zhou,Long You,Jia Zhang###
(362760, 362764)
 It is found that Fe3GaTe2 with highly spin-polarized Fermisurface ensures that such magnetic tunnel junctions may have prominenttunneling magnetoresistance effect at room temperature even comparable toexisting conventional AlOx and MgO-based MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Al
###Tremendous tunneling magnetoresistance effects based on van der Waals room-temperature ferromagnet Fe$_3$GaTe$_2$ with highly spin-polarized Fermi surfaces|Xinlu Li,Meng Zhu,Yaoyuan Wang,Fanxing Zheng,Jianting Dong,Ye Zhou,Long You,Jia Zhang###
(362821, 362821)
 It is found that Fe3GaTe2 with highly spin-polarized Fermisurface ensures that such magnetic tunnel junctions may have prominenttunneling magnetoresistance effect at room temperature even comparable toexisting conventional AlOx and MgO-based MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Tremendous tunneling magnetoresistance effects based on van der Waals room-temperature ferromagnet Fe$_3$GaTe$_2$ with highly spin-polarized Fermi surfaces|Xinlu Li,Meng Zhu,Yaoyuan Wang,Fanxing Zheng,Jianting Dong,Ye Zhou,Long You,Jia Zhang###
(362826, 362827)
 It is found that Fe3GaTe2 with highly spin-polarized Fermisurface ensures that such magnetic tunnel junctions may have prominenttunneling magnetoresistance effect at room temperature even comparable toexisting conventional AlOx and MgO-based MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe3GaTe2
###Tremendous tunneling magnetoresistance effects based on van der Waals room-temperature ferromagnet Fe$_3$GaTe$_2$ with highly spin-polarized Fermi surfaces|Xinlu Li,Meng Zhu,Yaoyuan Wang,Fanxing Zheng,Jianting Dong,Ye Zhou,Long You,Jia Zhang###
(362845, 362849)
 Our results suggest thatFe3GaTe2-based MTJs may be the promising candidate for realizing long-waitingfull magnetic vdW spintronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Tremendous tunneling magnetoresistance effects based on van der Waals room-temperature ferromagnet Fe$_3$GaTe$_2$ with highly spin-polarized Fermi surfaces|Xinlu Li,Meng Zhu,Yaoyuan Wang,Fanxing Zheng,Jianting Dong,Ye Zhou,Long You,Jia Zhang###
(362881, 362881)
 Our results suggest thatFe3GaTe2-based MTJs may be the promising candidate for realizing long-waitingfull magnetic vdW spintronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co3Sn2S2
###Observation of an unexpected negative magnetoresistance in magnetic Weyl semimetal Co$_3$Sn$_2$S$_2$|Ali G. Moghaddam,Kevin Geishendorf,Richard Schlitz,Jorge I. Facio,Praveen Vir,Chandra Shekhar,Claudia Felser,Kornelius Nielsch,Sebastian T. B. Goennenwein,Jeroen van den Brink,Andy Thomas###
(362916, 362921)
Observation of an unexpected negative magnetoresistance in magnetic Weyl semimetal Co3Sn2S2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 100, 'K', 2],[89.0, 180, 'K', 2],[106.0, 2, 'T', 2]

Co3Sn2S2
###Observation of an unexpected negative magnetoresistance in magnetic Weyl semimetal Co$_3$Sn$_2$S$_2$|Ali G. Moghaddam,Kevin Geishendorf,Richard Schlitz,Jorge I. Facio,Praveen Vir,Chandra Shekhar,Claudia Felser,Kornelius Nielsch,Sebastian T. B. Goennenwein,Jeroen van den Brink,Andy Thomas###
(362973, 362978)
 Focusing on the magnetic Weylsemimetal Co3Sn2S2, we prepared micro-ribbons and investigated theirtransverse and longitudinal transport properties from 100 K to 180 K inmagnetic fields mu0 H up to 2T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 100, 'K', 0],[32.0, 180, 'K', 0],[49.0, 2, 'T', 0]

H
###Observation of an unexpected negative magnetoresistance in magnetic Weyl semimetal Co$_3$Sn$_2$S$_2$|Ali G. Moghaddam,Kevin Geishendorf,Richard Schlitz,Jorge I. Facio,Praveen Vir,Chandra Shekhar,Claudia Felser,Kornelius Nielsch,Sebastian T. B. Goennenwein,Jeroen van den Brink,Andy Thomas###
(363022, 363022)
 Focusing on the magnetic Weylsemimetal Co3Sn2S2, we prepared micro-ribbons and investigated theirtransverse and longitudinal transport properties from 100 K to 180 K inmagnetic fields mu0 H up to 2T.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 100, 'K', 0],[12.0, 180, 'K', 0],[5.0, 2, 'T', 0]

H
###Observation of an unexpected negative magnetoresistance in magnetic Weyl semimetal Co$_3$Sn$_2$S$_2$|Ali G. Moghaddam,Kevin Geishendorf,Richard Schlitz,Jorge I. Facio,Praveen Vir,Chandra Shekhar,Claudia Felser,Kornelius Nielsch,Sebastian T. B. Goennenwein,Jeroen van den Brink,Andy Thomas###
(363075, 363075)
 We establish the presence of amagnetoresistance (MR) up to 1 % with a strong anisotropy depending theprojection of H on the easy-axis magnetization, which exceeds all othermagnetoresistive effects.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 100, 'K', 1],[65.0, 180, 'K', 1],[48.0, 2, 'T', 1]

La2
###Impact of a ferromagnetic insulating barrier in magnetic tunnel junctions|M. Abbasi Eskandari,S. Ghotb,P. Fournier###
(363334, 363335)
 The MTJ consists of twohalf-metallic ferromagnetic La2/3Sr1/3MnO3 (LSMO) manganites as electrodes andLa2NiMnO6 (LNMO) double perovskite as a ferromagnetic insulating barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 24, '%', 2],[171.0, 10, 'K', 2],[210.0, 280, 'K', 2]

Sr1
###Impact of a ferromagnetic insulating barrier in magnetic tunnel junctions|M. Abbasi Eskandari,S. Ghotb,P. Fournier###
(363338, 363339)
 The MTJ consists of twohalf-metallic ferromagnetic La2/3Sr1/3MnO3 (LSMO) manganites as electrodes andLa2NiMnO6 (LNMO) double perovskite as a ferromagnetic insulating barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 24, '%', 2],[167.0, 10, 'K', 2],[206.0, 280, 'K', 2]

MnO3
###Impact of a ferromagnetic insulating barrier in magnetic tunnel junctions|M. Abbasi Eskandari,S. Ghotb,P. Fournier###
(363342, 363344)
 The MTJ consists of twohalf-metallic ferromagnetic La2/3Sr1/3MnO3 (LSMO) manganites as electrodes andLa2NiMnO6 (LNMO) double perovskite as a ferromagnetic insulating barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 24, '%', 2],[162.0, 10, 'K', 2],[201.0, 280, 'K', 2]

O
###Impact of a ferromagnetic insulating barrier in magnetic tunnel junctions|M. Abbasi Eskandari,S. Ghotb,P. Fournier###
(363350, 363350)
 The MTJ consists of twohalf-metallic ferromagnetic La2/3Sr1/3MnO3 (LSMO) manganites as electrodes andLa2NiMnO6 (LNMO) double perovskite as a ferromagnetic insulating barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 24, '%', 2],[156.0, 10, 'K', 2],[195.0, 280, 'K', 2]

La2NiMnO6
###Impact of a ferromagnetic insulating barrier in magnetic tunnel junctions|M. Abbasi Eskandari,S. Ghotb,P. Fournier###
(363362, 363367)
 The MTJ consists of twohalf-metallic ferromagnetic La2/3Sr1/3MnO3 (LSMO) manganites as electrodes andLa2NiMnO6 (LNMO) double perovskite as a ferromagnetic insulating barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 24, '%', 2],[139.0, 10, 'K', 2],[178.0, 280, 'K', 2]

O
###Impact of a ferromagnetic insulating barrier in magnetic tunnel junctions|M. Abbasi Eskandari,S. Ghotb,P. Fournier###
(363373, 363373)
 The MTJ consists of twohalf-metallic ferromagnetic La2/3Sr1/3MnO3 (LSMO) manganites as electrodes andLa2NiMnO6 (LNMO) double perovskite as a ferromagnetic insulating barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 24, '%', 2],[133.0, 10, 'K', 2],[172.0, 280, 'K', 2]

O
###Impact of a ferromagnetic insulating barrier in magnetic tunnel junctions|M. Abbasi Eskandari,S. Ghotb,P. Fournier###
(363432, 363432)
 Theresistance of the junction is strongly dependent not only on the orientation ofthe magnetic moments in LSMO electrodes, but also on the direction of themagnetization of the LNMO barrier with respect to that of LSMO.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 24, '%', 1],[74.0, 10, 'K', 1],[113.0, 280, 'K', 1]

O
###Impact of a ferromagnetic insulating barrier in magnetic tunnel junctions|M. Abbasi Eskandari,S. Ghotb,P. Fournier###
(363461, 363461)
 Theresistance of the junction is strongly dependent not only on the orientation ofthe magnetic moments in LSMO electrodes, but also on the direction of themagnetization of the LNMO barrier with respect to that of LSMO.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 24, '%', 1],[45.0, 10, 'K', 1],[84.0, 280, 'K', 1]

O
###Impact of a ferromagnetic insulating barrier in magnetic tunnel junctions|M. Abbasi Eskandari,S. Ghotb,P. Fournier###
(363478, 363478)
 Theresistance of the junction is strongly dependent not only on the orientation ofthe magnetic moments in LSMO electrodes, but also on the direction of themagnetization of the LNMO barrier with respect to that of LSMO.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 24, '%', 1],[28.0, 10, 'K', 1],[67.0, 280, 'K', 1]

O
###Impact of a ferromagnetic insulating barrier in magnetic tunnel junctions|M. Abbasi Eskandari,S. Ghotb,P. Fournier###
(363542, 363542)
 The ratio oftunnel magnetoresistance reaches a maximum value of 24% at 10 K, and itdecreases with temperature until it completely disappears above the criticaltemperature of LNMO at 280 K.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 24, '%', 0],[36.0, 10, 'K', 0],[3.0, 280, 'K', 0]

O
###Impact of a ferromagnetic insulating barrier in magnetic tunnel junctions|M. Abbasi Eskandari,S. Ghotb,P. Fournier###
(363588, 363588)
 The tunneling process is described using amechanism which involves both empty and filled eg states of the LNMO barrieracting as a spin-filter.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 24, '%', 1],[82.0, 10, 'K', 1],[43.0, 280, 'K', 1]

U
###Unusual anisotropic magnetoresistance due to magnetization-dependent spin-orbit interactions|M. Q. Dong,Zhi-Xin Guo,X. R. Wang###
(363692, 363692)
 One of recent surprising discoveries is the unusual anisotropicmagnetoresistance (UAMR) that depends on two magnetization componentsperpendicular to the current differently, in contrast to the conventionalanisotropic magnetoresistance (AMR) that predicts no change in resistance whenthe magnetization varies in the plane perpendicular to the current.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Unusual anisotropic magnetoresistance due to magnetization-dependent spin-orbit interactions|M. Q. Dong,Zhi-Xin Guo,X. R. Wang###
(363803, 363803)
 Usingdensity functional theory and Boltzmann transport equation calculations for bccFe, hcp Co, and bcc FeCo alloys, we show that UAMR can be accounted by themagnetization-dependent spin-orbit interactions (SOI) Magnetization-dependentSOI modifies electron energy bands that, in turn, changes resistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Unusual anisotropic magnetoresistance due to magnetization-dependent spin-orbit interactions|M. Q. Dong,Zhi-Xin Guo,X. R. Wang###
(363808, 363808)
 Usingdensity functional theory and Boltzmann transport equation calculations for bccFe, hcp Co, and bcc FeCo alloys, we show that UAMR can be accounted by themagnetization-dependent spin-orbit interactions (SOI) Magnetization-dependentSOI modifies electron energy bands that, in turn, changes resistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeCo
###Unusual anisotropic magnetoresistance due to magnetization-dependent spin-orbit interactions|M. Q. Dong,Zhi-Xin Guo,X. R. Wang###
(363815, 363816)
 Usingdensity functional theory and Boltzmann transport equation calculations for bccFe, hcp Co, and bcc FeCo alloys, we show that UAMR can be accounted by themagnetization-dependent spin-orbit interactions (SOI) Magnetization-dependentSOI modifies electron energy bands that, in turn, changes resistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

U
###Unusual anisotropic magnetoresistance due to magnetization-dependent spin-orbit interactions|M. Q. Dong,Zhi-Xin Guo,X. R. Wang###
(363827, 363827)
 Usingdensity functional theory and Boltzmann transport equation calculations for bccFe, hcp Co, and bcc FeCo alloys, we show that UAMR can be accounted by themagnetization-dependent spin-orbit interactions (SOI) Magnetization-dependentSOI modifies electron energy bands that, in turn, changes resistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(SOI)
###Unusual anisotropic magnetoresistance due to magnetization-dependent spin-orbit interactions|M. Q. Dong,Zhi-Xin Guo,X. R. Wang###
(363853, 363857)
 Usingdensity functional theory and Boltzmann transport equation calculations for bccFe, hcp Co, and bcc FeCo alloys, we show that UAMR can be accounted by themagnetization-dependent spin-orbit interactions (SOI) Magnetization-dependentSOI modifies electron energy bands that, in turn, changes resistance.
Featurization successful!
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SOI
###Unusual anisotropic magnetoresistance due to magnetization-dependent spin-orbit interactions|M. Q. Dong,Zhi-Xin Guo,X. R. Wang###
(363864, 363866)
 Usingdensity functional theory and Boltzmann transport equation calculations for bccFe, hcp Co, and bcc FeCo alloys, we show that UAMR can be accounted by themagnetization-dependent spin-orbit interactions (SOI) Magnetization-dependentSOI modifies electron energy bands that, in turn, changes resistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SOI
###Unusual anisotropic magnetoresistance due to magnetization-dependent spin-orbit interactions|M. Q. Dong,Zhi-Xin Guo,X. R. Wang###
(363906, 363908)
 Aphenomenological model reveals the intrinsic connection between SOI andorder-parameters.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

U
###Unusual anisotropic magnetoresistance due to magnetization-dependent spin-orbit interactions|M. Q. Dong,Zhi-Xin Guo,X. R. Wang###
(363943, 363943)
 Such a mechanism is confirmed by the strong biaxial staineffect on UAMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

U
###Unusual anisotropic magnetoresistance due to magnetization-dependent spin-orbit interactions|M. Q. Dong,Zhi-Xin Guo,X. R. Wang###
(363976, 363976)
 Our findings provide an efficient way of searching andoptimizing materials with large UAMR, important in the design ofhigh-performance spintronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###A strain-controlled magnetostrictive pseudo spin valve|Vadym Iurchuk,Julien Bran,Manuel Acosta,Bohdan Kundys###
(364080, 364080)
 In this letter, we report on lateralelectric-field driven strain-mediated modulation of magnetic properties inCo/Cu/Py pseudo spin valve grown on ferroelectric PM<missing VAR>N-PT<missing VAR> substrate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co/Cu
###A strain-controlled magnetostrictive pseudo spin valve|Vadym Iurchuk,Julien Bran,Manuel Acosta,Bohdan Kundys###
(364117, 364119)
 In this letter, we report on lateralelectric-field driven strain-mediated modulation of magnetic properties inCo/Cu/Py pseudo spin valve grown on ferroelectric PM<missing VAR>N-PT<missing VAR> substrate.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

P
###A strain-controlled magnetostrictive pseudo spin valve|Vadym Iurchuk,Julien Bran,Manuel Acosta,Bohdan Kundys###
(364135, 364135)
 In this letter, we report on lateralelectric-field driven strain-mediated modulation of magnetic properties inCo/Cu/Py pseudo spin valve grown on ferroelectric PM<missing VAR>N-PT<missing VAR> substrate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###A strain-controlled magnetostrictive pseudo spin valve|Vadym Iurchuk,Julien Bran,Manuel Acosta,Bohdan Kundys###
(364137, 364137)
 In this letter, we report on lateralelectric-field driven strain-mediated modulation of magnetic properties inCo/Cu/Py pseudo spin valve grown on ferroelectric PM<missing VAR>N-PT<missing VAR> substrate.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###A strain-controlled magnetostrictive pseudo spin valve|Vadym Iurchuk,Julien Bran,Manuel Acosta,Bohdan Kundys###
(364139, 364139)
 In this letter, we report on lateralelectric-field driven strain-mediated modulation of magnetic properties inCo/Cu/Py pseudo spin valve grown on ferroelectric PM<missing VAR>N-PT<missing VAR> substrate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###A strain-controlled magnetostrictive pseudo spin valve|Vadym Iurchuk,Julien Bran,Manuel Acosta,Bohdan Kundys###
(364200, 364200)
 We showa decrease of the giant magnetoresistance ratio of the pseudo spin valve withincreasing electric field, which is attributed to the deviation of the Co layermagnetization from the initial direction due to strain-induced magnetoelasticanisotropy contribution.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###A strain-controlled magnetostrictive pseudo spin valve|Vadym Iurchuk,Julien Bran,Manuel Acosta,Bohdan Kundys###
(364266, 364266)
 Additionally, we demonstrate that strain-inducedmagnetic anisotropy effectively shifts the switching field of themagnetostrictive Co layer, while keeping the switching field of the nearlyzero-magnetostrictive Py layer unaffected due to its negligiblemagnetostriction constant.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PtSn4
###Theoretical model for the extreme positive magnetoresistance|George Kastrinakis###
(364435, 364437)
 We present a model for the positive extreme magnetoresistance (XMR), recentlyobserved in a plethora of metallic systems, such as PtSn4, PtBi2,PdCoO2, WTe2, NbSb2, NbP, TaSb2, LaSb, LaBi, ZrSiS and MoTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PtBi2
###Theoretical model for the extreme positive magnetoresistance|George Kastrinakis###
(364440, 364442)
 We present a model for the positive extreme magnetoresistance (XMR), recentlyobserved in a plethora of metallic systems, such as PtSn4, PtBi2,PdCoO2, WTe2, NbSb2, NbP, TaSb2, LaSb, LaBi, ZrSiS and MoTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PdCoO2
###Theoretical model for the extreme positive magnetoresistance|George Kastrinakis###
(364446, 364449)
 We present a model for the positive extreme magnetoresistance (XMR), recentlyobserved in a plethora of metallic systems, such as PtSn4, PtBi2,PdCoO2, WTe2, NbSb2, NbP, TaSb2, LaSb, LaBi, ZrSiS and MoTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Theoretical model for the extreme positive magnetoresistance|George Kastrinakis###
(364452, 364454)
 We present a model for the positive extreme magnetoresistance (XMR), recentlyobserved in a plethora of metallic systems, such as PtSn4, PtBi2,PdCoO2, WTe2, NbSb2, NbP, TaSb2, LaSb, LaBi, ZrSiS and MoTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbSb2
###Theoretical model for the extreme positive magnetoresistance|George Kastrinakis###
(364457, 364459)
 We present a model for the positive extreme magnetoresistance (XMR), recentlyobserved in a plethora of metallic systems, such as PtSn4, PtBi2,PdCoO2, WTe2, NbSb2, NbP, TaSb2, LaSb, LaBi, ZrSiS and MoTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbP
###Theoretical model for the extreme positive magnetoresistance|George Kastrinakis###
(364462, 364463)
 We present a model for the positive extreme magnetoresistance (XMR), recentlyobserved in a plethora of metallic systems, such as PtSn4, PtBi2,PdCoO2, WTe2, NbSb2, NbP, TaSb2, LaSb, LaBi, ZrSiS and MoTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TaSb2
###Theoretical model for the extreme positive magnetoresistance|George Kastrinakis###
(364466, 364468)
 We present a model for the positive extreme magnetoresistance (XMR), recentlyobserved in a plethora of metallic systems, such as PtSn4, PtBi2,PdCoO2, WTe2, NbSb2, NbP, TaSb2, LaSb, LaBi, ZrSiS and MoTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaSb
###Theoretical model for the extreme positive magnetoresistance|George Kastrinakis###
(364471, 364472)
 We present a model for the positive extreme magnetoresistance (XMR), recentlyobserved in a plethora of metallic systems, such as PtSn4, PtBi2,PdCoO2, WTe2, NbSb2, NbP, TaSb2, LaSb, LaBi, ZrSiS and MoTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaBi
###Theoretical model for the extreme positive magnetoresistance|George Kastrinakis###
(364475, 364476)
 We present a model for the positive extreme magnetoresistance (XMR), recentlyobserved in a plethora of metallic systems, such as PtSn4, PtBi2,PdCoO2, WTe2, NbSb2, NbP, TaSb2, LaSb, LaBi, ZrSiS and MoTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZrSiS
###Theoretical model for the extreme positive magnetoresistance|George Kastrinakis###
(364479, 364481)
 We present a model for the positive extreme magnetoresistance (XMR), recentlyobserved in a plethora of metallic systems, such as PtSn4, PtBi2,PdCoO2, WTe2, NbSb2, NbP, TaSb2, LaSb, LaBi, ZrSiS and MoTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoTe2
###Theoretical model for the extreme positive magnetoresistance|George Kastrinakis###
(364485, 364487)
 We present a model for the positive extreme magnetoresistance (XMR), recentlyobserved in a plethora of metallic systems, such as PtSn4, PtBi2,PdCoO2, WTe2, NbSb2, NbP, TaSb2, LaSb, LaBi, ZrSiS and MoTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Theoretical model for the extreme positive magnetoresistance|George Kastrinakis###
(364583, 364583)
 XMR is abulk effect (not a surface effect), due to the dramatic sensitivity of theconductivity to the finite magnetic field H.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Theoretical model for the extreme positive magnetoresistance|George Kastrinakis###
(364710, 364710)
According to our model XMR is higher in cleaner samples, and anisotropic withregards to the direction of H.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Theoretical model for the extreme positive magnetoresistance|George Kastrinakis###
(364730, 364730)
 We discuss in particular compounds containingthe elements Pt, Sc, and Rh.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sc
###Theoretical model for the extreme positive magnetoresistance|George Kastrinakis###
(364733, 364733)
 We discuss in particular compounds containingthe elements Pt, Sc, and Rh.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Rh
###Theoretical model for the extreme positive magnetoresistance|George Kastrinakis###
(364738, 364738)
 We discuss in particular compounds containingthe elements Pt, Sc, and Rh.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs/AlGaAs
###Magnetoresistance of a 2-dimensional electron gas in a random magnetic field|Anders Smith,Rafael Taboryski,Luise Theil Hansen,Claus B. Sorensen,Per Hedegard,P. E. Lindelof###
(364812, 364817)
 We report magnetoresistance measurements on a two-dimensional electron gas(2DEG) made from a high mobility GaAs/AlGaAs heterostructure, where theexternally applied magnetic field was expelled from regions of thesemiconductor by means of superconducting lead grains randomly distributed onthe surface of the sample.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

B0
###Ballistic Composite Fermions in Semiconductor Nanostructures|J. E. F. Frost,C. -T. Liang,D. R. Mace,M. Y. Simmons,D. A. Ritchie,M. Pepper###
(365040, 365041)
 The well known ballistic electron transportphenomena of quenching of the Hall effect in a mesoscopic cross-junction andnegative magnetoresistance of a constriction are observed close to B0 andnu 1/2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CeCu2Si2
###The influence of crystal-field effects on the electronic transport properties of heavy-fermion systems: a semiphenomenological approach|M. Huth,F. B. Anders###
(365500, 365504)
 Within the scope of this calculation using thelinearized Boltzmann theory in the relaxation time approximation thequalitative features of the temperature-dependent resistivity, themagnetoresistivity and the thermoelectric power can be successfully reproduced;this is exemplified by a comparison with experimental results on CeCu2Si2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Conductivity and Atomic Structure of Isolated Multiwalled Carbon Nanotubes|A. Yu. Kasumov,H. Bouchiat,B. Reulet,O. Stephan,I. I. Khodos,Yu. B. Gorbatov,C. Colliex###
(365551, 365551)
 We report associated high resolution transmission electron microscopy (HRTEM)and transport measurements on a series of isolated multiwalled carbonnanotubes.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 20, 'mK', 3],[158.0, 0.6, 'K', 3]

H
###Conductivity and Atomic Structure of Isolated Multiwalled Carbon Nanotubes|A. Yu. Kasumov,H. Bouchiat,B. Reulet,O. Stephan,I. I. Khodos,Yu. B. Gorbatov,C. Colliex###
(365583, 365583)
 HRTEM observations, by revealing relevant structural features of thetubes, shed some light on the variety of observed transport behaviors, fromsemiconducting to quasi-metallic type.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 20, 'mK', 2],[126.0, 0.6, 'K', 2]

In
###Shadow Bands and Tunneling Magnetoresistance in Itinerant Electron Ferromagnets|A. H. MacDonald,T. Jungwirth,M. Kasner###
(365747, 365747)
 In itinerant electron ferromagnets spectral weight is transferred at finitetemperatures from quasiparticle peaks located at majority and minority-spinband energies to shadow-band peaks.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs/AlGaAs
###Suppression of hole-hole scattering in GaAs/AlGaAs heterostructures under uniaxial compression|V. Kravchenko,N. Minina,A. Savin,C. B. Sorensen,O. P. Hansen,W. Kraak###
(366309, 366314)
Suppression of hole-hole scattering in GaAs/AlGaAs heterostructures under uniaxial compression.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[34.0, 2, 'D', 1],[165.0, 4.5, 'times', 3]

GaAs/Al0.5Ga0.5As
###Suppression of hole-hole scattering in GaAs/AlGaAs heterostructures under uniaxial compression|V. Kravchenko,N. Minina,A. Savin,C. B. Sorensen,O. P. Hansen,W. Kraak###
(366364, 366371)
 Resistance, magnetoresistance and their temperature dependencies have beeninvestigated in the 2D hole gas at a [001] p<missing VAR>-GaAs/Al0.5Ga0.5Asheterointerface under [110] uniaxial compression.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[16.0, 2, 'D', 0],[108.0, 4.5, 'times', 2]

Fe
###Magnetoresistance due to Domain Walls in Micron Scale Fe Wires with Stripe Domains|A. D. Kent,U. Ruediger,J. Yu,S. Zhang,P. M. Levy,Y. Zhong,S. S. P. Parkin###
(366523, 366523)
Magnetoresistance due to Domain Walls in Micron Scale Fe Wires with Stripe Domains.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 80, 'K', 4]

Fe
###Magnetoresistance due to Domain Walls in Micron Scale Fe Wires with Stripe Domains|A. D. Kent,U. Ruediger,J. Yu,S. Zhang,P. M. Levy,Y. Zhong,S. S. P. Parkin###
(366564, 366564)
 The magnetoresistance (MR) associated with domain boundaries has beeninvestigated in microfabricated bcc Fe (0.65 to 20 mum<missing VAR> linewidth) wires withcontrolled stripe domains.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 80, 'K', 3]

K
###Magnetoresistance due to Domain Walls in Micron Scale Fe Wires with Stripe Domains|A. D. Kent,U. Ruediger,J. Yu,S. Zhang,P. M. Levy,Y. Zhong,S. S. P. Parkin###
(366708, 366708)
 Evidence is presented that domainboundaries enhance the conductivity in such microstructures over a broad rangeof temperatures (1.5 K to 80 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 80, 'K', 0]

(PV)
###The Effects of Resonant Tunneling on Magnetoresistance through a Q uantum Dot|Tetsufumi Tanamoto,Shinobu Fujita###
(366902, 366905)
 We alsofound that the peak current-valley current (PV) ratio decreases when thejunction conductance increases.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

AlAs
###Anomalous spin-splitting of two-dimensional electrons in an AlAs Quantum Well|S. J. Papadakis,E. P. De Poortere,M. Shayegan###
(366949, 366950)
Anomalous spin-splitting of two-dimensional electrons in an AlAs Quantum Well.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 9.0, ',', 2]

AlAs
###Anomalous spin-splitting of two-dimensional electrons in an AlAs Quantum Well|S. J. Papadakis,E. P. De Poortere,M. Shayegan###
(366992, 366993)
 We measure the effective Lande g<missing VAR>-factor of high-mobility two-dimensionalelectrons in a modulation-doped AlAs quantum well by tilting the sample in amagnetic field and monitoring the evolution of the magnetoresistanceoscillations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 9.0, ',', 1]

KKY
###Interlayer coupling in ferromagnetic semiconductor superlattices|T. Jungwirth,W. A. Atkinson,B. H. Lee,A. H. MacDonald###
(367363, 367365)
 Our approach represents an improvement over standardR<missing VAR>KKY model allowing spatial inhomogeneity of the system, free-carrier spinpolarization, finite temperature, and free-carrier exchange and correlation tobe accounted for self-consistently.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Interlayer coupling in ferromagnetic semiconductor superlattices|T. Jungwirth,W. A. Atkinson,B. H. Lee,A. H. MacDonald###
(367423, 367423)
 As an example, we calculate the electronicstructure of a Mnx<missing VAR>Ga1-xAs/GaAs superlattice with alternatingferromagnetic and paramagnetic layers and demonstrate the possibility ofsemiconductor magnetoresistance systems with designed properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Interlayer coupling in ferromagnetic semiconductor superlattices|T. Jungwirth,W. A. Atkinson,B. H. Lee,A. H. MacDonald###
(367445, 367445)
 As an example, we calculate the electronicstructure of a Mnx<missing VAR>Ga1-xAs/GaAs superlattice with alternatingferromagnetic and paramagnetic layers and demonstrate the possibility ofsemiconductor magnetoresistance systems with designed properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga1-xAs/GaAs
###Interlayer coupling in ferromagnetic semiconductor superlattices|T. Jungwirth,W. A. Atkinson,B. H. Lee,A. H. MacDonald###
(367447, 367454)
 As an example, we calculate the electronicstructure of a Mnx<missing VAR>Ga1-xAs/GaAs superlattice with alternatingferromagnetic and paramagnetic layers and demonstrate the possibility ofsemiconductor magnetoresistance systems with designed properties.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

La0.7Sr0.3MnO3
###Fermi surface of the colossal magnetoresistance perovskite La_{0.7}Sr_{0.3}MnO_{3}|E. A. Livesay,R. N. West,S. B. Dugdale,G. Santi,T. Jarlborg###
(367710, 367716)
Fermi surface of the colossal magnetoresistance perovskite La0.7Sr0.3MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Fermi surface of the colossal magnetoresistance perovskite La_{0.7}Sr_{0.3}MnO_{3}|E. A. Livesay,R. N. West,S. B. Dugdale,G. Santi,T. Jarlborg###
(367730, 367730)
 Materials that exhibit colossal magnetoresistance (CMR) are currently thefocus of an intense research effort, driven by the technological applicationsthat their sensitivity lends them to.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Fermi surface of the colossal magnetoresistance perovskite La_{0.7}Sr_{0.3}MnO_{3}|E. A. Livesay,R. N. West,S. B. Dugdale,G. Santi,T. Jarlborg###
(367830, 367830)
 Using the angular correlation of photonsfrom electron-positron annihilation, we present a first glimpse of the Fermisurface of a material that exhibits CMR, supported by virtual crystalelectronic structure calculations.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La1.905Ba0.095CuO4
###Normal-state magnetotransport in La_{1.905}Ba_{0.095}CuO_{4} single crystals|Yasushi Abe,Yoichi Ando,J. Takeya,H. Tanabe,T. Watauchi,I. Tanaka,H. Kojima###
(367905, 367911)
Normal-state magnetotransport in La1.905Ba0.095CuO4 single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.013571428571428571,0.27214285714285713,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La2-xBa
###Normal-state magnetotransport in La_{1.905}Ba_{0.095}CuO_{4} single crystals|Yasushi Abe,Yoichi Ando,J. Takeya,H. Tanabe,T. Watauchi,I. Tanaka,H. Kojima###
(367930, 367934)
 The normal-state magnetotransport properties of La2-xBax<missing VAR>CuO4 singlecrystals with x<missing VAR>0.095 are measured; at this composition, a structuraltransition to a low-temperature-tetragonal (LTT) phase occurs withoutsuppression of superconductivity.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

CuO4
###Normal-state magnetotransport in La_{1.905}Ba_{0.095}CuO_{4} single crystals|Yasushi Abe,Yoichi Ando,J. Takeya,H. Tanabe,T. Watauchi,I. Tanaka,H. Kojima###
(367936, 367938)
 The normal-state magnetotransport properties of La2-xBax<missing VAR>CuO4 singlecrystals with x<missing VAR>0.095 are measured; at this composition, a structuraltransition to a low-temperature-tetragonal (LTT) phase occurs withoutsuppression of superconductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Infinite magnetoresistance of magnetic multilayers|R. Seviour,S. Sanvito,C. J. Lambert,J. H. Jefferson###
(368162, 368162)
 In the limit that the phase-breaking and spin flipscattering lengths are greater than the system size, a multiple-scatteringapproach is used to calculate the 4-probe conductance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Isotope effects and the charge gap formation in the charge ordered phase of colossal magnetoresistance manganites|Unjong Yu,Yu. V. Skrypnyk,B. I. Min###
(368396, 368396)
 We have shown that theisotope effects on  T<missing VAR>C in the metallic phase and  T<missing VAR>CO in the chargeordered phase of manganites can be explained well in terms of the doubleexchange and polaron narrowing factors with reasonable physical parameters.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CO
###Isotope effects and the charge gap formation in the charge ordered phase of colossal magnetoresistance manganites|Unjong Yu,Yu. V. Skrypnyk,B. I. Min###
(368410, 368411)
 We have shown that theisotope effects on  T<missing VAR>C in the metallic phase and  T<missing VAR>CO in the chargeordered phase of manganites can be explained well in terms of the doubleexchange and polaron narrowing factors with reasonable physical parameters.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magnon Broadening Effect by Magnon-Phonon Interaction in Colossal Magnetoresistance Manganites|Nobuo Furukawa###
(368497, 368497)
 In order to study the magnetic excitation behaviors in colossalmagnetoresistance manganites, a magnon-phonon interacting system isinvestigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(PC)
###Conductance Quantization and Magnetoresistance in Magnetic Point Contacts|Hiroshi Imamura,Nobuhiko Kobayashi,Saburo Takahashi,Sadamichi Maekawa###
(368877, 368880)
 We theoretically study the electron transport through a magnetic pointcontact (PC) with special attention to the effect of an atomic scale domainwall (D<missing VAR>W).
Featurization successful!
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Conductance Quantization and Magnetoresistance in Magnetic Point Contacts|Hiroshi Imamura,Nobuhiko Kobayashi,Saburo Takahashi,Sadamichi Maekawa###
(368909, 368909)
 We theoretically study the electron transport through a magnetic pointcontact (PC) with special attention to the effect of an atomic scale domainwall (D<missing VAR>W).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Conductance Quantization and Magnetoresistance in Magnetic Point Contacts|Hiroshi Imamura,Nobuhiko Kobayashi,Saburo Takahashi,Sadamichi Maekawa###
(368943, 368943)
 The spin precession of a conduction electron is forbidden in such anatomic scale D<missing VAR>W and the sequence of quantized conductances depends on therelative orientation of magnetizations between left and right electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PC
###Conductance Quantization and Magnetoresistance in Magnetic Point Contacts|Hiroshi Imamura,Nobuhiko Kobayashi,Saburo Takahashi,Sadamichi Maekawa###
(369000, 369001)
 Themagnetoresistance is strongly enhanced for the narrow PC and oscillates withthe conductance.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr
###Self-similar magnetoresistance of Fibonacci ultrathin magnetic films|C. G. Bezerra,J. M. de Araujo,C. Chesman,E. L. Albuquerque###
(369074, 369074)
 We study numerically the magnetic properties (magnetization andmagnetoresistance) of ultra-thin magnetic films (Fe/Cr) grown following theFibonacci sequence.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Linear Field Dependence of the Normal-State In-Plane Magnetoresistance of Sr2RuO4|R. Jin,Y. Liu,F. Lichtenberg###
(369224, 369224)
Linear Field Dependence of the Normal-State In-Plane Magnetoresistance of Sr2RuO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr2RuO4
###Linear Field Dependence of the Normal-State In-Plane Magnetoresistance of Sr2RuO4|R. Jin,Y. Liu,F. Lichtenberg###
(369232, 369236)
Linear Field Dependence of the Normal-State In-Plane Magnetoresistance of Sr2RuO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr2RuO4
###Linear Field Dependence of the Normal-State In-Plane Magnetoresistance of Sr2RuO4|R. Jin,Y. Liu,F. Lichtenberg###
(369266, 369270)
 The transverse and longitudinal in-plane magnetoresistances in the normalstate of superconducting Sr2RuO4 single crystals have been measured.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Linear Field Dependence of the Normal-State In-Plane Magnetoresistance of Sr2RuO4|R. Jin,Y. Liu,F. Lichtenberg###
(369283, 369283)
 At lowtemperatures, both of them were found to be positive with a linearmagnetic-field dependence above a threshold field, a result not expected fromelectronic band theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr2RuO4
###Linear Field Dependence of the Normal-State In-Plane Magnetoresistance of Sr2RuO4|R. Jin,Y. Liu,F. Lichtenberg###
(369401, 369405)
 We argue that such behavior is a manifestation of anovel coherent state characterized by a spin pseudo gap in the quasi-particleexcitation spectrum in Sr2RuO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Au0.7In0.3
###Observation of Magnetic Fingerprints in Superconducting Au_0.7In_0.3 Cylinders|Yu. Zadorozhny,D. R. Herman,Y. Liu###
(369428, 369431)
Observation of Magnetic Fingerprints in Superconducting Au0.7In0.3 Cylinders.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Au0.7In0.3
###Observation of Magnetic Fingerprints in Superconducting Au_0.7In_0.3 Cylinders|Yu. Zadorozhny,D. R. Herman,Y. Liu###
(369490, 369493)
 Reproducible, sample-specific magnetoresistance fluctuations (magneticfingerprints) have been observed experimentally in the low-temperature part ofthe superconducting transition regime of disordered superconductingAu0.7In0.3 cylinders.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi
###Magnetoresistance and conductivity exponents of quench-condensed ultra-thin films of Bi|K. Das Gupta,G. Sambandamurthy,V. H. S. Moorthy,N. Chandrasekhar###
(369973, 369973)
Magnetoresistance and conductivity exponents of quench-condensed ultra-thin films of Bi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 1.33, ',', 3]

La
###Anisotropic effect of field on the orthorhombic-to-tetragonal transition in the striped cuprate (La,Nd)_{2-x}Sr_xCuO_4|Z. A. Xu,N. P. Ong,T. Noda,H. Eisaki,S. Uchida###
(370190, 370190)
Anisotropic effect of field on the orthorhombic-to-tetragonal transition in the striped cuprate (La,Nd)2-xSrxCuO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 74, 'K', 1],[60.0, 0.1, ',', 1]

Nd
###Anisotropic effect of field on the orthorhombic-to-tetragonal transition in the striped cuprate (La,Nd)_{2-x}Sr_xCuO_4|Z. A. Xu,N. P. Ong,T. Noda,H. Eisaki,S. Uchida###
(370192, 370192)
Anisotropic effect of field on the orthorhombic-to-tetragonal transition in the striped cuprate (La,Nd)2-xSrxCuO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 74, 'K', 1],[58.0, 0.1, ',', 1]

CuO4
###Anisotropic effect of field on the orthorhombic-to-tetragonal transition in the striped cuprate (La,Nd)_{2-x}Sr_xCuO_4|Z. A. Xu,N. P. Ong,T. Noda,H. Eisaki,S. Uchida###
(370199, 370201)
Anisotropic effect of field on the orthorhombic-to-tetragonal transition in the striped cuprate (La,Nd)2-xSrxCuO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 74, 'K', 1],[49.0, 0.1, ',', 1]

Nd
###Anisotropic effect of field on the orthorhombic-to-tetragonal transition in the striped cuprate (La,Nd)_{2-x}Sr_xCuO_4|Z. A. Xu,N. P. Ong,T. Noda,H. Eisaki,S. Uchida###
(370206, 370206)
 The Nd-doped cuprate La2-y-xNdySrx<missing VAR>CuO4 displays a first-order phasetransition at Td ( 74 K for x<missing VAR>0.10, y<missing VAR>  0.60) to a low-temperature tetragonal(LTT) phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 74, 'K', 0],[44.0, 0.1, ',', 0]

La2-y
###Anisotropic effect of field on the orthorhombic-to-tetragonal transition in the striped cuprate (La,Nd)_{2-x}Sr_xCuO_4|Z. A. Xu,N. P. Ong,T. Noda,H. Eisaki,S. Uchida###
(370212, 370215)
 The Nd-doped cuprate La2-y-xNdySrx<missing VAR>CuO4 displays a first-order phasetransition at Td ( 74 K for x<missing VAR>0.10, y<missing VAR>  0.60) to a low-temperature tetragonal(LTT) phase.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[30.0, 74, 'K', 0],[35.0, 0.1, ',', 0]

Sr
###Anisotropic effect of field on the orthorhombic-to-tetragonal transition in the striped cuprate (La,Nd)_{2-x}Sr_xCuO_4|Z. A. Xu,N. P. Ong,T. Noda,H. Eisaki,S. Uchida###
(370220, 370220)
 The Nd-doped cuprate La2-y-xNdySrx<missing VAR>CuO4 displays a first-order phasetransition at Td ( 74 K for x<missing VAR>0.10, y<missing VAR>  0.60) to a low-temperature tetragonal(LTT) phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 74, 'K', 0],[30.0, 0.1, ',', 0]

CuO4
###Anisotropic effect of field on the orthorhombic-to-tetragonal transition in the striped cuprate (La,Nd)_{2-x}Sr_xCuO_4|Z. A. Xu,N. P. Ong,T. Noda,H. Eisaki,S. Uchida###
(370222, 370224)
 The Nd-doped cuprate La2-y-xNdySrx<missing VAR>CuO4 displays a first-order phasetransition at Td ( 74 K for x<missing VAR>0.10, y<missing VAR>  0.60) to a low-temperature tetragonal(LTT) phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 74, 'K', 0],[26.0, 0.1, ',', 0]

H
###Anisotropic effect of field on the orthorhombic-to-tetragonal transition in the striped cuprate (La,Nd)_{2-x}Sr_xCuO_4|Z. A. Xu,N. P. Ong,T. Noda,H. Eisaki,S. Uchida###
(370285, 370285)
 A magnetic field H applied  the a-axis leads to an increase inTd, whereas Td is decreased when H  c<missing VAR>.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 74, 'K', 1],[35.0, 0.1, ',', 1]

H
###Anisotropic effect of field on the orthorhombic-to-tetragonal transition in the striped cuprate (La,Nd)_{2-x}Sr_xCuO_4|Z. A. Xu,N. P. Ong,T. Noda,H. Eisaki,S. Uchida###
(370322, 370322)
 A magnetic field H applied  the a-axis leads to an increase inTd, whereas Td is decreased when H  c<missing VAR>.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 74, 'K', 1],[72.0, 0.1, ',', 1]

Nd
###Anisotropic effect of field on the orthorhombic-to-tetragonal transition in the striped cuprate (La,Nd)_{2-x}Sr_xCuO_4|Z. A. Xu,N. P. Ong,T. Noda,H. Eisaki,S. Uchida###
(370345, 370345)
 These effects show that magneticordering involving both Nd and Cu spins plays a key role in driving the LTO-LTTtransition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 74, 'K', 2],[95.0, 0.1, ',', 2]

Cu
###Anisotropic effect of field on the orthorhombic-to-tetragonal transition in the striped cuprate (La,Nd)_{2-x}Sr_xCuO_4|Z. A. Xu,N. P. Ong,T. Noda,H. Eisaki,S. Uchida###
(370349, 370349)
 These effects show that magneticordering involving both Nd and Cu spins plays a key role in driving the LTO-LTTtransition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 74, 'K', 2],[99.0, 0.1, ',', 2]

O
###Anisotropic effect of field on the orthorhombic-to-tetragonal transition in the striped cuprate (La,Nd)_{2-x}Sr_xCuO_4|Z. A. Xu,N. P. Ong,T. Noda,H. Eisaki,S. Uchida###
(370369, 370369)
 These effects show that magneticordering involving both Nd and Cu spins plays a key role in driving the LTO-LTTtransition.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 74, 'K', 2],[119.0, 0.1, ',', 2]

Bi
###Charge transport along the c-axis in high-T_c cuprates|Yoichi Ando###
(370473, 370473)
 Using 61-T<missing VAR> pulsed magnetic fields, the normal-state rhoab and rhoc<missing VAR>are measured in Bi-2201 system down to 0.66 K, and the coexistence of themetallic rhoab and the semiconducting rhoc<missing VAR>, usually called thecharge confinement behavior, was confirmed to extend far below Tc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 0.66, 'K', 0],[84.0, 16, 'T', 1]

Y
###Charge transport along the c-axis in high-T_c cuprates|Yoichi Ando###
(370572, 370572)
 Recentmeasurement of the c<missing VAR>-axis magnetoresistance under 16 T dc magnetic field inheavily underdoped Y-123 crystals revealed that the peculiar c<missing VAR>-axis chargetransport, and thus the charge confinement, is fundamentally related to theantiferromagnetic spin fluctuations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 0.66, 'K', 1],[15.0, 16, 'T', 0]

Nd2-xCe
###Two-dimensional quantum interference contributions to the magnetoresistance of Nd{2-x}Ce{x}CuO{4-d} single crystals|G. I. Harus,A. N. Ignatenkov,A. I. Ponomarev,L. D. Sabirzyanova,N. G. Shelushinina,N. A. Babushkina###
(370651, 370655)
Two-dimensional quantum interference contributions to the magnetoresistance of Nd2-xCex<missing VAR>CuO4-d single crystals.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[14.0, 2, 'D', 1],[144.0, 2, 'D', 2]

CuO4-d
###Two-dimensional quantum interference contributions to the magnetoresistance of Nd{2-x}Ce{x}CuO{4-d} single crystals|G. I. Harus,A. N. Ignatenkov,A. I. Ponomarev,L. D. Sabirzyanova,N. G. Shelushinina,N. A. Babushkina###
(370657, 370661)
Two-dimensional quantum interference contributions to the magnetoresistance of Nd2-xCex<missing VAR>CuO4-d single crystals.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[8.0, 2, 'D', 1],[138.0, 2, 'D', 2]

K
###Two-dimensional quantum interference contributions to the magnetoresistance of Nd{2-x}Ce{x}CuO{4-d} single crystals|G. I. Harus,A. N. Ignatenkov,A. I. Ponomarev,L. D. Sabirzyanova,N. G. Shelushinina,N. A. Babushkina###
(370691, 370691)
 The 2D weak localization effects at low temperatures T<missing VAR>  (0.2-4.2)K have beeninvestigated in nonsuperconducting sample Nd1.88Ce0.12CuO4-d and in thenormal state of the superconducting sample Nd1.82Ce0.18CuO4-d for B>Bc<missing VAR>2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 2, 'D', 0],[108.0, 2, 'D', 1]

Nd1.88Ce0.12CuO4-d
###Two-dimensional quantum interference contributions to the magnetoresistance of Nd{2-x}Ce{x}CuO{4-d} single crystals|G. I. Harus,A. N. Ignatenkov,A. I. Ponomarev,L. D. Sabirzyanova,N. G. Shelushinina,N. A. Babushkina###
(370706, 370714)
 The 2D weak localization effects at low temperatures T<missing VAR>  (0.2-4.2)K have beeninvestigated in nonsuperconducting sample Nd1.88Ce0.12CuO4-d and in thenormal state of the superconducting sample Nd1.82Ce0.18CuO4-d for B>Bc<missing VAR>2.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[37.0, 2, 'D', 0],[85.0, 2, 'D', 1]

Nd1.82Ce0.18CuO4-d
###Two-dimensional quantum interference contributions to the magnetoresistance of Nd{2-x}Ce{x}CuO{4-d} single crystals|G. I. Harus,A. N. Ignatenkov,A. I. Ponomarev,L. D. Sabirzyanova,N. G. Shelushinina,N. A. Babushkina###
(370735, 370743)
 The 2D weak localization effects at low temperatures T<missing VAR>  (0.2-4.2)K have beeninvestigated in nonsuperconducting sample Nd1.88Ce0.12CuO4-d and in thenormal state of the superconducting sample Nd1.82Ce0.18CuO4-d for B>Bc<missing VAR>2.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[66.0, 2, 'D', 0],[56.0, 2, 'D', 1]

B
###Two-dimensional quantum interference contributions to the magnetoresistance of Nd{2-x}Ce{x}CuO{4-d} single crystals|G. I. Harus,A. N. Ignatenkov,A. I. Ponomarev,L. D. Sabirzyanova,N. G. Shelushinina,N. A. Babushkina###
(370747, 370747)
 The 2D weak localization effects at low temperatures T<missing VAR>  (0.2-4.2)K have beeninvestigated in nonsuperconducting sample Nd1.88Ce0.12CuO4-d and in thenormal state of the superconducting sample Nd1.82Ce0.18CuO4-d for B>Bc<missing VAR>2.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 2, 'D', 0],[52.0, 2, 'D', 1]

B
###Two-dimensional quantum interference contributions to the magnetoresistance of Nd{2-x}Ce{x}CuO{4-d} single crystals|G. I. Harus,A. N. Ignatenkov,A. I. Ponomarev,L. D. Sabirzyanova,N. G. Shelushinina,N. A. Babushkina###
(370749, 370749)
 The 2D weak localization effects at low temperatures T<missing VAR>  (0.2-4.2)K have beeninvestigated in nonsuperconducting sample Nd1.88Ce0.12CuO4-d and in thenormal state of the superconducting sample Nd1.82Ce0.18CuO4-d for B>Bc<missing VAR>2.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 2, 'D', 0],[50.0, 2, 'D', 1]

CuO2
###Two-dimensional quantum interference contributions to the magnetoresistance of Nd{2-x}Ce{x}CuO{4-d} single crystals|G. I. Harus,A. N. Ignatenkov,A. I. Ponomarev,L. D. Sabirzyanova,N. G. Shelushinina,N. A. Babushkina###
(370779, 370781)
The phase coherence time and the effective thickness d<missing VAR> of a conducting CuO2layer have been estimated by the fitting of 2D weak localization theoryexpressions to the magnetoresistivity data for the normal to plane and thein-plane magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 2, 'D', 1],[18.0, 2, 'D', 0]

EuB6
###Magnetotransport in the low carrier density ferromagnet EuB_6|S. Suellow,I. Prasad,S. Bogdanovich,M. C. Aronson,J. L. Sarrao,Z. Fisk###
(370864, 370866)
Magnetotransport in the low carrier density ferromagnet EuB6.
Featurization terminated normally.
0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 15.3, 'K', 2],[62.0, 12.5, 'K', 2]

EuB6
###Magnetotransport in the low carrier density ferromagnet EuB_6|S. Suellow,I. Prasad,S. Bogdanovich,M. C. Aronson,J. L. Sarrao,Z. Fisk###
(370893, 370895)
 We present a magnetotransport study of the low--carrier density ferromagnetEuB6.
Featurization terminated normally.
0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 15.3, 'K', 1],[33.0, 12.5, 'K', 1]

C
###Magnetotransport in the low carrier density ferromagnet EuB_6|S. Suellow,I. Prasad,S. Bogdanovich,M. C. Aronson,J. L. Sarrao,Z. Fisk###
(370948, 370948)
 This semimetallic compound, which undergoes two ferromagnetictransitions at Tl  15.3 K and Tc  12.5 K, exhibits close to Tl a colossalmagnetoresistivity (CMR).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 15.3, 'K', 0],[20.0, 12.5, 'K', 0]

EuB6
###Magnetotransport in the low carrier density ferromagnet EuB_6|S. Suellow,I. Prasad,S. Bogdanovich,M. C. Aronson,J. L. Sarrao,Z. Fisk###
(371021, 371023)
 We attributethis disagreement with theory to the unique type of magnetic polaron formationin EuB6.
Featurization terminated normally.
0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 15.3, 'K', 2],[93.0, 12.5, 'K', 2]

Bi2Sr2CuO6
###3D-melting features of the irreversibility line in overdoped Bi$_2$Sr$_2$CuO$_6$ at ultra-low temperature and high magnetic field|A. Morello,A. G. M. Jansen,R. S. Gonnelli,S. I. Vedeneev###
(371053, 371059)
3D<missing VAR>-melting features of the irreversibility line in overdoped Bi2Sr2CuO6 at ultra-low temperature and high magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5454545454545454,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.09090909090909091,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 3, 'D', 1],[163.0, 2, 'D', 2]

Bi2Sr2CuO6
###3D-melting features of the irreversibility line in overdoped Bi$_2$Sr$_2$CuO$_6$ at ultra-low temperature and high magnetic field|A. Morello,A. G. M. Jansen,R. S. Gonnelli,S. I. Vedeneev###
(371097, 371103)
 We have measured the irreversible magnetization of an overdopedBi2Sr2CuO6 single crystal up to B28 T<missing VAR> and down to T<missing VAR>60 m<missing VAR>K, andextracted the irreversibility line Brm irr(T) the data can beinterpreted in the whole temperature range as a 3D-anisotropic vortex latticemelting line with Lindemann number c<missing VAR>rm L<missing VAR>0.13.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5454545454545454,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.09090909090909091,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 3, 'D', 0],[119.0, 2, 'D', 1]

B28
###3D-melting features of the irreversibility line in overdoped Bi$_2$Sr$_2$CuO$_6$ at ultra-low temperature and high magnetic field|A. Morello,A. G. M. Jansen,R. S. Gonnelli,S. I. Vedeneev###
(371113, 371114)
 We have measured the irreversible magnetization of an overdopedBi2Sr2CuO6 single crystal up to B28 T<missing VAR> and down to T<missing VAR>60 m<missing VAR>K, andextracted the irreversibility line Brm irr(T) the data can beinterpreted in the whole temperature range as a 3D-anisotropic vortex latticemelting line with Lindemann number c<missing VAR>rm L<missing VAR>0.13.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 3, 'D', 0],[108.0, 2, 'D', 1]

K
###3D-melting features of the irreversibility line in overdoped Bi$_2$Sr$_2$CuO$_6$ at ultra-low temperature and high magnetic field|A. Morello,A. G. M. Jansen,R. S. Gonnelli,S. I. Vedeneev###
(371128, 371128)
 We have measured the irreversible magnetization of an overdopedBi2Sr2CuO6 single crystal up to B28 T<missing VAR> and down to T<missing VAR>60 m<missing VAR>K, andextracted the irreversibility line Brm irr(T) the data can beinterpreted in the whole temperature range as a 3D-anisotropic vortex latticemelting line with Lindemann number c<missing VAR>rm L<missing VAR>0.13.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 3, 'D', 0],[94.0, 2, 'D', 1]

B
###3D-melting features of the irreversibility line in overdoped Bi$_2$Sr$_2$CuO$_6$ at ultra-low temperature and high magnetic field|A. Morello,A. G. M. Jansen,R. S. Gonnelli,S. I. Vedeneev###
(371142, 371142)
 We have measured the irreversible magnetization of an overdopedBi2Sr2CuO6 single crystal up to B28 T<missing VAR> and down to T<missing VAR>60 m<missing VAR>K, andextracted the irreversibility line Brm irr(T) the data can beinterpreted in the whole temperature range as a 3D-anisotropic vortex latticemelting line with Lindemann number c<missing VAR>rm L<missing VAR>0.13.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 3, 'D', 0],[80.0, 2, 'D', 1]

In
###Semi-classical magnetoresistance in weakly modulated magnetic fields|A. Matulis,F. M. Peeters###
(371324, 371324)
 In the limit of small magnetic field amplitudes (B) thecontribution of the magnetic modulation to the magnetoresistance increases asB3/2 in the diffusive limit, while the increase is linear in B in theballistic regime.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(B)
###Semi-classical magnetoresistance in weakly modulated magnetic fields|A. Matulis,F. M. Peeters###
(371340, 371342)
 In the limit of small magnetic field amplitudes (B) thecontribution of the magnetic modulation to the magnetoresistance increases asB3/2 in the diffusive limit, while the increase is linear in B in theballistic regime.
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B3
###Semi-classical magnetoresistance in weakly modulated magnetic fields|A. Matulis,F. M. Peeters###
(371368, 371369)
 In the limit of small magnetic field amplitudes (B) thecontribution of the magnetic modulation to the magnetoresistance increases asB3/2 in the diffusive limit, while the increase is linear in B in theballistic regime.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Semi-classical magnetoresistance in weakly modulated magnetic fields|A. Matulis,F. M. Peeters###
(371394, 371394)
 In the limit of small magnetic field amplitudes (B) thecontribution of the magnetic modulation to the magnetoresistance increases asB3/2 in the diffusive limit, while the increase is linear in B in theballistic regime.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(H)
###Field-Induced Crossover and Colossal Magnetoresistance in La(0.7)Pb(0.3)MnO(3)|Y. Y. Xue,B. Lorenz,A. K. Heilman,M. Gospodinov,S. G. Dobreva,C. W. Chu###
(371777, 371779)
 The field-dependence of theresistivity and M<missing VAR> suggests that a small spin-canted species withmean-field-like interactions dominates at low fields (H), whereas, individualspins and 3D Ising/Heisenberg models describe the high-H behavior rather well.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 3, 'D', 0]

H
###Field-Induced Crossover and Colossal Magnetoresistance in La(0.7)Pb(0.3)MnO(3)|Y. Y. Xue,B. Lorenz,A. K. Heilman,M. Gospodinov,S. G. Dobreva,C. W. Chu###
(371805, 371805)
 The field-dependence of theresistivity and M<missing VAR> suggests that a small spin-canted species withmean-field-like interactions dominates at low fields (H), whereas, individualspins and 3D Ising/Heisenberg models describe the high-H behavior rather well.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 3, 'D', 0]

H
###Field-Induced Crossover and Colossal Magnetoresistance in La(0.7)Pb(0.3)MnO(3)|Y. Y. Xue,B. Lorenz,A. K. Heilman,M. Gospodinov,S. G. Dobreva,C. W. Chu###
(371826, 371826)
Around the ferromagnetic transition, an H-induced destruction of the smallspin-canted magnetic polarons is accompanied by large magnetoresistance.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 3, 'D', 1]

La2
###Oscillatory Exchange Coupling and Positive Magnetoresistance in Epitaxial Oxide Heterostructures|K. R. Nikolaev,A. Yu. Dobin,I. N. Krivorotov,W. K. Cooley,A. Bhattacharya,A. L. Kobrinskii,L. I. Glazman,R. M. Wentzcovitch,E. Dan Dahlberg,A. M. Goldman###
(372092, 372093)
 Oscillations in the exchange coupling between ferromagneticLa2/3Ba1/3MnO3 layers with paramagnetic LaNiO3 spacer layerthickness has been observed in epitaxial heterostructures of the two oxides.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ba1
###Oscillatory Exchange Coupling and Positive Magnetoresistance in Epitaxial Oxide Heterostructures|K. R. Nikolaev,A. Yu. Dobin,I. N. Krivorotov,W. K. Cooley,A. Bhattacharya,A. L. Kobrinskii,L. I. Glazman,R. M. Wentzcovitch,E. Dan Dahlberg,A. M. Goldman###
(372096, 372097)
 Oscillations in the exchange coupling between ferromagneticLa2/3Ba1/3MnO3 layers with paramagnetic LaNiO3 spacer layerthickness has been observed in epitaxial heterostructures of the two oxides.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnO3
###Oscillatory Exchange Coupling and Positive Magnetoresistance in Epitaxial Oxide Heterostructures|K. R. Nikolaev,A. Yu. Dobin,I. N. Krivorotov,W. K. Cooley,A. Bhattacharya,A. L. Kobrinskii,L. I. Glazman,R. M. Wentzcovitch,E. Dan Dahlberg,A. M. Goldman###
(372100, 372102)
 Oscillations in the exchange coupling between ferromagneticLa2/3Ba1/3MnO3 layers with paramagnetic LaNiO3 spacer layerthickness has been observed in epitaxial heterostructures of the two oxides.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaNiO3
###Oscillatory Exchange Coupling and Positive Magnetoresistance in Epitaxial Oxide Heterostructures|K. R. Nikolaev,A. Yu. Dobin,I. N. Krivorotov,W. K. Cooley,A. Bhattacharya,A. L. Kobrinskii,L. I. Glazman,R. M. Wentzcovitch,E. Dan Dahlberg,A. M. Goldman###
(372110, 372113)
 Oscillations in the exchange coupling between ferromagneticLa2/3Ba1/3MnO3 layers with paramagnetic LaNiO3 spacer layerthickness has been observed in epitaxial heterostructures of the two oxides.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

KKY
###Oscillatory Exchange Coupling and Positive Magnetoresistance in Epitaxial Oxide Heterostructures|K. R. Nikolaev,A. Yu. Dobin,I. N. Krivorotov,W. K. Cooley,A. Bhattacharya,A. L. Kobrinskii,L. I. Glazman,R. M. Wentzcovitch,E. Dan Dahlberg,A. M. Goldman###
(372157, 372159)
This behavior is explained within the R<missing VAR>KKY model employing an it ab initiocalculated band structure of LaNiO3, taking into account strong electronscattering in the spacer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaNiO3
###Oscillatory Exchange Coupling and Positive Magnetoresistance in Epitaxial Oxide Heterostructures|K. R. Nikolaev,A. Yu. Dobin,I. N. Krivorotov,W. K. Cooley,A. Bhattacharya,A. L. Kobrinskii,L. I. Glazman,R. M. Wentzcovitch,E. Dan Dahlberg,A. M. Goldman###
(372182, 372185)
This behavior is explained within the R<missing VAR>KKY model employing an it ab initiocalculated band structure of LaNiO3, taking into account strong electronscattering in the spacer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(F)
###Electron Transport in Hybrid Ferromagnetic/Superconducting Nanostructures|V. T. Petrashov,I. A. Sosnin,C. Troadec,I. Cox,A. Parsons###
(372273, 372275)
 We observe large amplitude changes in the resistance of ferromagnetic (F)wires at the onset of superconductivity of adjacent superconductors (S).
Featurization successful!
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(S)
###Electron Transport in Hybrid Ferromagnetic/Superconducting Nanostructures|V. T. Petrashov,I. A. Sosnin,C. Troadec,I. Cox,A. Parsons###
(372296, 372298)
 We observe large amplitude changes in the resistance of ferromagnetic (F)wires at the onset of superconductivity of adjacent superconductors (S).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Electron Transport in Hybrid Ferromagnetic/Superconducting Nanostructures|V. T. Petrashov,I. A. Sosnin,C. Troadec,I. Cox,A. Parsons###
(372329, 372329)
 Newsharp peaks of large amplitude are found in the magnetoresistance of theF-wires.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F/S
###Electron Transport in Hybrid Ferromagnetic/Superconducting Nanostructures|V. T. Petrashov,I. A. Sosnin,C. Troadec,I. Cox,A. Parsons###
(372361, 372363)
 We discuss a new mechanism for the long-range superconductingproximity effect in F/S nanostructures based on the analysis of the topologiesof actual Fermi-surfaces in ferromagnetic metals.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

I
###True Superconductivity in a 2D "Superconducting-Insulating" System|Nadya Mason,Aharon Kapitulnik###
(372472, 372472)
 Based on low-fielddata and I-V characteristics, we find evidence of a low temperatureMetal-to-Superconductor transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 2, 'D', 2]

V
###True Superconductivity in a 2D "Superconducting-Insulating" System|Nadya Mason,Aharon Kapitulnik###
(372474, 372474)
 Based on low-fielddata and I-V characteristics, we find evidence of a low temperatureMetal-to-Superconductor transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 2, 'D', 2]

I
###True Superconductivity in a 2D "Superconducting-Insulating" System|Nadya Mason,Aharon Kapitulnik###
(372526, 372526)
 This transition is characterized byhysteretic magnetoresistance and discontinuities in the I-V curves.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 2, 'D', 3]

V
###True Superconductivity in a 2D "Superconducting-Insulating" System|Nadya Mason,Aharon Kapitulnik###
(372528, 372528)
 This transition is characterized byhysteretic magnetoresistance and discontinuities in the I-V curves.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 2, 'D', 3]

Sr2RuO4
###Phenomenological model for magnetotransport in a multi-orbital system|Canio Noce,Mario Cuoco###
(373016, 373020)
 By means of the Boltzmann equation, we have calculated some magnetotransportquantities for the layered multi-orbital compound Sr2RuO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co/Cu
###c(2x2) Interface Alloys in Co/Cu Multilayers - Influence on Interlayer Exchange Coupling and GMR|Peter Zahn,Ingrid Mertig###
(373172, 373174)
c<missing VAR>(2x<missing VAR>2) Interface Alloys in Co/Cu Multilayers - Influence on Interlayer Exchange Coupling and GMR.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[45.0, 3, 'd', 1]

I
###c(2x2) Interface Alloys in Co/Cu Multilayers - Influence on Interlayer Exchange Coupling and GMR|Peter Zahn,Ingrid Mertig###
(373245, 373245)
 The influence of a c<missing VAR>(2x<missing VAR>2) ordered interface alloy of 3d transition metals atthe ferromagnet/nonmagnet interface on interlayer exchange coupling (IX<missing VAR>C), theformation of quantum well states (Q<missing VAR>WS) and the phenomenon of GiantMagnetoResistance is investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 3, 'd', 0]

C
###c(2x2) Interface Alloys in Co/Cu Multilayers - Influence on Interlayer Exchange Coupling and GMR|Peter Zahn,Ingrid Mertig###
(373247, 373247)
 The influence of a c<missing VAR>(2x<missing VAR>2) ordered interface alloy of 3d transition metals atthe ferromagnet/nonmagnet interface on interlayer exchange coupling (IX<missing VAR>C), theformation of quantum well states (Q<missing VAR>WS) and the phenomenon of GiantMagnetoResistance is investigated.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 3, 'd', 0]

S
###c(2x2) Interface Alloys in Co/Cu Multilayers - Influence on Interlayer Exchange Coupling and GMR|Peter Zahn,Ingrid Mertig###
(373267, 373267)
 The influence of a c<missing VAR>(2x<missing VAR>2) ordered interface alloy of 3d transition metals atthe ferromagnet/nonmagnet interface on interlayer exchange coupling (IX<missing VAR>C), theformation of quantum well states (Q<missing VAR>WS) and the phenomenon of GiantMagnetoResistance is investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 3, 'd', 0]

I
###c(2x2) Interface Alloys in Co/Cu Multilayers - Influence on Interlayer Exchange Coupling and GMR|Peter Zahn,Ingrid Mertig###
(373301, 373301)
 We obtained a strong dependence of IX<missing VAR>C oninterface alloy formation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 3, 'd', 1]

C
###c(2x2) Interface Alloys in Co/Cu Multilayers - Influence on Interlayer Exchange Coupling and GMR|Peter Zahn,Ingrid Mertig###
(373303, 373303)
 We obtained a strong dependence of IX<missing VAR>C oninterface alloy formation.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 3, 'd', 1]

Fe
###c(2x2) Interface Alloys in Co/Cu Multilayers - Influence on Interlayer Exchange Coupling and GMR|Peter Zahn,Ingrid Mertig###
(373339, 373339)
 We foundthat Fe, Ni and Cu alloys at the interface enhance the GMR ratio for in-planegeometry by nearly a factor of 2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 3, 'd', 3]

Ni
###c(2x2) Interface Alloys in Co/Cu Multilayers - Influence on Interlayer Exchange Coupling and GMR|Peter Zahn,Ingrid Mertig###
(373342, 373342)
 We foundthat Fe, Ni and Cu alloys at the interface enhance the GMR ratio for in-planegeometry by nearly a factor of 2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 3, 'd', 3]

Cu
###c(2x2) Interface Alloys in Co/Cu Multilayers - Influence on Interlayer Exchange Coupling and GMR|Peter Zahn,Ingrid Mertig###
(373346, 373346)
 We foundthat Fe, Ni and Cu alloys at the interface enhance the GMR ratio for in-planegeometry by nearly a factor of 2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 3, 'd', 3]

Fe
###Ab initio description of tunnel junctions|Peter Zahn,Ingrid Mertig###
(373448, 373448)
 Based on spin-density functional theory we calculate the electronic structureof a tunnel junction consisting of two magnetic Fe layers separated by aninsulating vacuum barrier selfconsistently.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Au0.7In0.3
###Magnetic Fingerprints in Superconducting Au$_{0.7}$In$_{0.3}$ Cylinders|Yu. Zadorozhny,D. R. Herman,Y. Liu###
(373779, 373782)
Magnetic Fingerprints in Superconducting Au0.7In0.3 Cylinders.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Au0.7In0.3
###Magnetic Fingerprints in Superconducting Au$_{0.7}$In$_{0.3}$ Cylinders|Yu. Zadorozhny,D. R. Herman,Y. Liu###
(373834, 373837)
 Reproducible, sample-specific magnetoresistance fluctuations (magneticfingerprints) were observed in the low-temperature part of the superconductingtransition regime of hollow Au0.7In0.3 cylinders of submicrondiameter.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Inhomogeneous Charge State in HTSC Cuprates and CMR Manganites|T. Egami###
(373948, 373948)
Inhomogeneous Charge State in HT<missing VAR>SC Cuprates and CMR Manganites.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SC
###Inhomogeneous Charge State in HTSC Cuprates and CMR Manganites|T. Egami###
(373950, 373951)
Inhomogeneous Charge State in HT<missing VAR>SC Cuprates and CMR Manganites.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Inhomogeneous Charge State in HTSC Cuprates and CMR Manganites|T. Egami###
(373957, 373957)
Inhomogeneous Charge State in HT<missing VAR>SC Cuprates and CMR Manganites.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Inhomogeneous Charge State in HTSC Cuprates and CMR Manganites|T. Egami###
(374027, 374027)
 Recent measurements of neutron elastic and inelastic scattering suggest thatthe charge states are spatially inhomogeneous at two lengthscales, atomic andnanometer scales, in both the high-temperature superconducting (HT<missing VAR>SC) cupratesand colossal magnetoresistive (CMR) manganites.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Inhomogeneous Charge State in HTSC Cuprates and CMR Manganites|T. Egami###
(374030, 374030)
 Recent measurements of neutron elastic and inelastic scattering suggest thatthe charge states are spatially inhomogeneous at two lengthscales, atomic andnanometer scales, in both the high-temperature superconducting (HT<missing VAR>SC) cupratesand colossal magnetoresistive (CMR) manganites.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Inhomogeneous Charge State in HTSC Cuprates and CMR Manganites|T. Egami###
(374043, 374043)
 Recent measurements of neutron elastic and inelastic scattering suggest thatthe charge states are spatially inhomogeneous at two lengthscales, atomic andnanometer scales, in both the high-temperature superconducting (HT<missing VAR>SC) cupratesand colossal magnetoresistive (CMR) manganites.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Inhomogeneous Charge State in HTSC Cuprates and CMR Manganites|T. Egami###
(374078, 374078)
 We suggest that the two-phononmechanism that controls the charge localization in CMR manganites is also atwork in HT<missing VAR>SC cuprates, and may hold a key to understanding the mechanism ofsuperconductivity.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Inhomogeneous Charge State in HTSC Cuprates and CMR Manganites|T. Egami###
(374095, 374095)
 We suggest that the two-phononmechanism that controls the charge localization in CMR manganites is also atwork in HT<missing VAR>SC cuprates, and may hold a key to understanding the mechanism ofsuperconductivity.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SC
###Inhomogeneous Charge State in HTSC Cuprates and CMR Manganites|T. Egami###
(374097, 374098)
 We suggest that the two-phononmechanism that controls the charge localization in CMR manganites is also atwork in HT<missing VAR>SC cuprates, and may hold a key to understanding the mechanism ofsuperconductivity.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ge1-xSi
###Probing the p-Ge_{1-x}Si_x/Ge/p-Ge_{1-x}Si_x quantum well by means of the quantum Hall effect|M. V. Yakunin,G. A. Alshanskii,Yu. G. Arapov,G. I. Harus,V. N. Neverov,N. G. Shelushinina,O. A. Kuznetsov###
(374141, 374145)
Probing the p<missing VAR>-Ge1-xSix<missing VAR>/Ge/p<missing VAR>-Ge1-xSix<missing VAR> quantum well by means of the quantum Hall effect.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[51.0, 15, 'K', 1],[105.0, 0.07, ',', 1],[129.0, 38, 'nm', 1],[463.0, 1, 'as', 5]

Ge
###Probing the p-Ge_{1-x}Si_x/Ge/p-Ge_{1-x}Si_x quantum well by means of the quantum Hall effect|M. V. Yakunin,G. A. Alshanskii,Yu. G. Arapov,G. I. Harus,V. N. Neverov,N. G. Shelushinina,O. A. Kuznetsov###
(374148, 374148)
Probing the p<missing VAR>-Ge1-xSix<missing VAR>/Ge/p<missing VAR>-Ge1-xSix<missing VAR> quantum well by means of the quantum Hall effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 15, 'K', 1],[102.0, 0.07, ',', 1],[126.0, 38, 'nm', 1],[460.0, 1, 'as', 5]

Ge1-xSi
###Probing the p-Ge_{1-x}Si_x/Ge/p-Ge_{1-x}Si_x quantum well by means of the quantum Hall effect|M. V. Yakunin,G. A. Alshanskii,Yu. G. Arapov,G. I. Harus,V. N. Neverov,N. G. Shelushinina,O. A. Kuznetsov###
(374152, 374156)
Probing the p<missing VAR>-Ge1-xSix<missing VAR>/Ge/p<missing VAR>-Ge1-xSix<missing VAR> quantum well by means of the quantum Hall effect.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[40.0, 15, 'K', 1],[94.0, 0.07, ',', 1],[118.0, 38, 'nm', 1],[452.0, 1, 'as', 5]

B
###Probing the p-Ge_{1-x}Si_x/Ge/p-Ge_{1-x}Si_x quantum well by means of the quantum Hall effect|M. V. Yakunin,G. A. Alshanskii,Yu. G. Arapov,G. I. Harus,V. N. Neverov,N. G. Shelushinina,O. A. Kuznetsov###
(374210, 374210)
 We have measured the temperature (0.1 < T<missing VAR> < 15 K) and magnetic field (0 < B <32 T) dependences of longitudinal and Hall resistivities for thep<missing VAR>-Ge1-xSix<missing VAR>/Ge, x<missing VAR>0.07, multilayers with different Ge layer widths 10 < dw< 38 nm and hole densities ps  (1-5)x<missing VAR>1015 m<missing VAR>-2.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 15, 'K', 0],[40.0, 0.07, ',', 0],[64.0, 38, 'nm', 0],[398.0, 1, 'as', 4]

Ge1-xSi
###Probing the p-Ge_{1-x}Si_x/Ge/p-Ge_{1-x}Si_x quantum well by means of the quantum Hall effect|M. V. Yakunin,G. A. Alshanskii,Yu. G. Arapov,G. I. Harus,V. N. Neverov,N. G. Shelushinina,O. A. Kuznetsov###
(374239, 374243)
 We have measured the temperature (0.1 < T<missing VAR> < 15 K) and magnetic field (0 < B <32 T) dependences of longitudinal and Hall resistivities for thep<missing VAR>-Ge1-xSix<missing VAR>/Ge, x<missing VAR>0.07, multilayers with different Ge layer widths 10 < dw< 38 nm and hole densities ps  (1-5)x<missing VAR>1015 m<missing VAR>-2.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[43.0, 15, 'K', 0],[7.0, 0.07, ',', 0],[31.0, 38, 'nm', 0],[365.0, 1, 'as', 4]

Ge
###Probing the p-Ge_{1-x}Si_x/Ge/p-Ge_{1-x}Si_x quantum well by means of the quantum Hall effect|M. V. Yakunin,G. A. Alshanskii,Yu. G. Arapov,G. I. Harus,V. N. Neverov,N. G. Shelushinina,O. A. Kuznetsov###
(374246, 374246)
 We have measured the temperature (0.1 < T<missing VAR> < 15 K) and magnetic field (0 < B <32 T) dependences of longitudinal and Hall resistivities for thep<missing VAR>-Ge1-xSix<missing VAR>/Ge, x<missing VAR>0.07, multilayers with different Ge layer widths 10 < dw< 38 nm and hole densities ps  (1-5)x<missing VAR>1015 m<missing VAR>-2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 15, 'K', 0],[4.0, 0.07, ',', 0],[28.0, 38, 'nm', 0],[362.0, 1, 'as', 4]

Ge
###Probing the p-Ge_{1-x}Si_x/Ge/p-Ge_{1-x}Si_x quantum well by means of the quantum Hall effect|M. V. Yakunin,G. A. Alshanskii,Yu. G. Arapov,G. I. Harus,V. N. Neverov,N. G. Shelushinina,O. A. Kuznetsov###
(374259, 374259)
 We have measured the temperature (0.1 < T<missing VAR> < 15 K) and magnetic field (0 < B <32 T) dependences of longitudinal and Hall resistivities for thep<missing VAR>-Ge1-xSix<missing VAR>/Ge, x<missing VAR>0.07, multilayers with different Ge layer widths 10 < dw< 38 nm and hole densities ps  (1-5)x<missing VAR>1015 m<missing VAR>-2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 15, 'K', 0],[9.0, 0.07, ',', 0],[15.0, 38, 'nm', 0],[349.0, 1, 'as', 4]

W
###Probing the p-Ge_{1-x}Si_x/Ge/p-Ge_{1-x}Si_x quantum well by means of the quantum Hall effect|M. V. Yakunin,G. A. Alshanskii,Yu. G. Arapov,G. I. Harus,V. N. Neverov,N. G. Shelushinina,O. A. Kuznetsov###
(374375, 374375)
 An extremely highsensitivity of the experimental data [the structure of magnetoresistancetraces, relative values of the inter-Landau-level (LL) gaps deduced from theactivated magnetotransport etc] to the quantum well (Q<missing VAR>W) characteristics hasbeen revealed in the cases when the Fermi level reaches the second confinementsubband.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 15, 'K', 1],[125.0, 0.07, ',', 1],[101.0, 38, 'nm', 1],[233.0, 1, 'as', 3]

V
###Probing the p-Ge_{1-x}Si_x/Ge/p-Ge_{1-x}Si_x quantum well by means of the quantum Hall effect|M. V. Yakunin,G. A. Alshanskii,Yu. G. Arapov,G. I. Harus,V. N. Neverov,N. G. Shelushinina,O. A. Kuznetsov###
(374436, 374436)
 The background density of states (5-10)x<missing VAR>1014 m<missing VAR>-2meV-1 deducedfrom the activation behavior of the magnetoresistance is too high to beattributed to the LL tails, but may be accounted for within a smooth randompotential model.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[240.0, 15, 'K', 2],[186.0, 0.07, ',', 2],[162.0, 38, 'nm', 2],[172.0, 1, 'as', 2]

Ge
###Probing the p-Ge_{1-x}Si_x/Ge/p-Ge_{1-x}Si_x quantum well by means of the quantum Hall effect|M. V. Yakunin,G. A. Alshanskii,Yu. G. Arapov,G. I. Harus,V. N. Neverov,N. G. Shelushinina,O. A. Kuznetsov###
(374514, 374514)
 The hole gas in the Ge Q<missing VAR>W has been found to separate into twosublayers for dw > 35 nm and ps  5x<missing VAR>1015 m<missing VAR>-2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[318.0, 15, 'K', 3],[264.0, 0.07, ',', 3],[240.0, 38, 'nm', 3],[94.0, 1, 'as', 1]

W
###Probing the p-Ge_{1-x}Si_x/Ge/p-Ge_{1-x}Si_x quantum well by means of the quantum Hall effect|M. V. Yakunin,G. A. Alshanskii,Yu. G. Arapov,G. I. Harus,V. N. Neverov,N. G. Shelushinina,O. A. Kuznetsov###
(374517, 374517)
 The hole gas in the Ge Q<missing VAR>W has been found to separate into twosublayers for dw > 35 nm and ps  5x<missing VAR>1015 m<missing VAR>-2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[321.0, 15, 'K', 3],[267.0, 0.07, ',', 3],[243.0, 38, 'nm', 3],[91.0, 1, 'as', 1]

H
###Probing the p-Ge_{1-x}Si_x/Ge/p-Ge_{1-x}Si_x quantum well by means of the quantum Hall effect|M. V. Yakunin,G. A. Alshanskii,Yu. G. Arapov,G. I. Harus,V. N. Neverov,N. G. Shelushinina,O. A. Kuznetsov###
(374592, 374592)
 A dramatic indicationto this separation is the disappearance of the quantum Hall (Q<missing VAR>H) plateau forthe filling factor nu  1 as calculated for the whole Ge layer.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[396.0, 15, 'K', 4],[342.0, 0.07, ',', 4],[318.0, 38, 'nm', 4],[16.0, 1, 'as', 0]

Ge
###Probing the p-Ge_{1-x}Si_x/Ge/p-Ge_{1-x}Si_x quantum well by means of the quantum Hall effect|M. V. Yakunin,G. A. Alshanskii,Yu. G. Arapov,G. I. Harus,V. N. Neverov,N. G. Shelushinina,O. A. Kuznetsov###
(374618, 374618)
 A dramatic indicationto this separation is the disappearance of the quantum Hall (Q<missing VAR>H) plateau forthe filling factor nu  1 as calculated for the whole Ge layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[422.0, 15, 'K', 4],[368.0, 0.07, ',', 4],[344.0, 38, 'nm', 4],[10.0, 1, 'as', 0]

H
###Probing the p-Ge_{1-x}Si_x/Ge/p-Ge_{1-x}Si_x quantum well by means of the quantum Hall effect|M. V. Yakunin,G. A. Alshanskii,Yu. G. Arapov,G. I. Harus,V. N. Neverov,N. G. Shelushinina,O. A. Kuznetsov###
(374697, 374697)
 A modelis suggested to explain the existence of the Q<missing VAR>H plateaux close to thefundamental values in a system of two parallel layers with differentmobilities.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[501.0, 15, 'K', 6],[447.0, 0.07, ',', 6],[423.0, 38, 'nm', 6],[89.0, 1, 'as', 2]

H
###Probing the p-Ge_{1-x}Si_x/Ge/p-Ge_{1-x}Si_x quantum well by means of the quantum Hall effect|M. V. Yakunin,G. A. Alshanskii,Yu. G. Arapov,G. I. Harus,V. N. Neverov,N. G. Shelushinina,O. A. Kuznetsov###
(374751, 374751)
 A comparison of the simulated structure of the Q<missing VAR>Hmagnetoresistivity with the experimental one indicates that the hole densitiesin the sublayers are not much different.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[555.0, 15, 'K', 7],[501.0, 0.07, ',', 7],[477.0, 38, 'nm', 7],[143.0, 1, 'as', 3]

Ge
###Probing the p-Ge_{1-x}Si_x/Ge/p-Ge_{1-x}Si_x quantum well by means of the quantum Hall effect|M. V. Yakunin,G. A. Alshanskii,Yu. G. Arapov,G. I. Harus,V. N. Neverov,N. G. Shelushinina,O. A. Kuznetsov###
(374826, 374826)
 Thus, the different mobilities are dueto different quality of the normal and inverted interfaces of the Ge Q<missing VAR>W.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[630.0, 15, 'K', 8],[576.0, 0.07, ',', 8],[552.0, 38, 'nm', 8],[218.0, 1, 'as', 4]

W
###Probing the p-Ge_{1-x}Si_x/Ge/p-Ge_{1-x}Si_x quantum well by means of the quantum Hall effect|M. V. Yakunin,G. A. Alshanskii,Yu. G. Arapov,G. I. Harus,V. N. Neverov,N. G. Shelushinina,O. A. Kuznetsov###
(374829, 374829)
 Thus, the different mobilities are dueto different quality of the normal and inverted interfaces of the Ge Q<missing VAR>W.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[633.0, 15, 'K', 8],[579.0, 0.07, ',', 8],[555.0, 38, 'nm', 8],[221.0, 1, 'as', 4]

MnO3
###Rhodium Doped Manganites : Ferromagnetism and Metallicity|Bernard Raveau,Sylvie Hebert,Antoine Maignan,Raymond Fresard,Maryvonne Hervieu,Daniel Khomskii###
(375277, 375279)
 The possibility to induce ferromagnetism and insulator to metal transitionsin small A site cation manganites Ln1-xCaxMnO3 by rhodium doping is shownfor the first time.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Rhodium Doped Manganites : Ferromagnetism and Metallicity|Bernard Raveau,Sylvie Hebert,Antoine Maignan,Raymond Fresard,Maryvonne Hervieu,Daniel Khomskii###
(375306, 375306)
 Colossal magnetoresistance (CMR) properties are evidencedfor a large compositional range (0.35 leq x<missing VAR> < 0.60).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnAs
###Two-Carrier Transport in Epitaxially Grown MnAs|J. J. Berry,S. J. Potashnik,S. H. Chun,K. C. Ku,P. Schiffer,N. Samarth###
(375417, 375418)
Two-Carrier Transport in Epitaxially Grown MnAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnAs
###Two-Carrier Transport in Epitaxially Grown MnAs|J. J. Berry,S. J. Potashnik,S. H. Chun,K. C. Ku,P. Schiffer,N. Samarth###
(375431, 375432)
 Magneto-transport measurements of ferromagnetic MnAs epilayers grown bymolecular beam epitaxy reveal the presence of both positive and negative chargecarriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnAs
###Two-Carrier Transport in Epitaxially Grown MnAs|J. J. Berry,S. J. Potashnik,S. H. Chun,K. C. Ku,P. Schiffer,N. Samarth###
(375561, 375562)
 These results are of direct relevance toMnAs/semiconductor hybrid heterostructures and their exploitation in electronicand optical spin injection experiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Oscillating magnetoresistance in diluted magnetic semiconductor barrier structures|Kai Chang,J. B. Xia,F. M. Peeters###
(375827, 375827)
 Ballistic spin polarized transport through diluted magnetic semiconductor(DMS) single and double barrier structures is investigated theoretically usinga two-component model.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Oscillating magnetoresistance in diluted magnetic semiconductor barrier structures|Kai Chang,J. B. Xia,F. M. Peeters###
(375928, 375928)
 Aninteresting beat pattern in the TMR and spin polarization is found fordifferent NM<missing VAR>S/DMS double barrier structures which arises from an interplaybetween the spin-up and spin-down electron channels which are splitted by thes-d exchange interaction.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Oscillating magnetoresistance in diluted magnetic semiconductor barrier structures|Kai Chang,J. B. Xia,F. M. Peeters###
(375930, 375930)
 Aninteresting beat pattern in the TMR and spin polarization is found fordifferent NM<missing VAR>S/DMS double barrier structures which arises from an interplaybetween the spin-up and spin-down electron channels which are splitted by thes-d exchange interaction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Oscillating magnetoresistance in diluted magnetic semiconductor barrier structures|Kai Chang,J. B. Xia,F. M. Peeters###
(375934, 375934)
 Aninteresting beat pattern in the TMR and spin polarization is found fordifferent NM<missing VAR>S/DMS double barrier structures which arises from an interplaybetween the spin-up and spin-down electron channels which are splitted by thes-d exchange interaction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Spin-relaxation and magnetoresistance in FM/SC/FM tunnel junctions|Saburo Takahashi,Taro Yamashita,Hiroshi Imamura,Sadamichi Maekawa###
(376009, 376009)
Spin-relaxation and magnetoresistance in FM<missing VAR>/SC/FM<missing VAR> tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SC/F
###Spin-relaxation and magnetoresistance in FM/SC/FM tunnel junctions|Saburo Takahashi,Taro Yamashita,Hiroshi Imamura,Sadamichi Maekawa###
(376012, 376015)
Spin-relaxation and magnetoresistance in FM<missing VAR>/SC/FM<missing VAR> tunnel junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

F
###Spin-relaxation and magnetoresistance in FM/SC/FM tunnel junctions|Saburo Takahashi,Taro Yamashita,Hiroshi Imamura,Sadamichi Maekawa###
(376057, 376057)
 The effect of spin relaxation on tunnel magnetoresistance (TMR) in aferromagnet/superconductor/ferromagnet (FM<missing VAR>/SC/FM) double tunnel junction istheoretically studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SC/F
###Spin-relaxation and magnetoresistance in FM/SC/FM tunnel junctions|Saburo Takahashi,Taro Yamashita,Hiroshi Imamura,Sadamichi Maekawa###
(376060, 376063)
 The effect of spin relaxation on tunnel magnetoresistance (TMR) in aferromagnet/superconductor/ferromagnet (FM<missing VAR>/SC/FM) double tunnel junction istheoretically studied.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

SC
###Spin-relaxation and magnetoresistance in FM/SC/FM tunnel junctions|Saburo Takahashi,Taro Yamashita,Hiroshi Imamura,Sadamichi Maekawa###
(376089, 376090)
 The spin accumulation in SC is determined by balancingof the spin-injection rate and the spin-relaxation rate.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin-relaxation and magnetoresistance in FM/SC/FM tunnel junctions|Saburo Takahashi,Taro Yamashita,Hiroshi Imamura,Sadamichi Maekawa###
(376122, 376122)
 In the superconductingstate, the spin-relaxation time becomes longer with decreasing temperature,resulting in a rapid increase of TMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Spin-relaxation and magnetoresistance in FM/SC/FM tunnel junctions|Saburo Takahashi,Taro Yamashita,Hiroshi Imamura,Sadamichi Maekawa###
(376177, 376177)
 The TMR of FM<missing VAR>/SC/FM<missing VAR> junctions provides auseful probe to extract information about spin-relaxation in superconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SC/F
###Spin-relaxation and magnetoresistance in FM/SC/FM tunnel junctions|Saburo Takahashi,Taro Yamashita,Hiroshi Imamura,Sadamichi Maekawa###
(376180, 376183)
 The TMR of FM<missing VAR>/SC/FM<missing VAR> junctions provides auseful probe to extract information about spin-relaxation in superconductors.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

In
###Electronic properties of antidot lattices fabricated by atomic force lithography|A. Dorn,A. Fuhrer,T. Ihn,T. Heinzel,K. Ensslin,W. Wegscheider,M. Bichler###
(376340, 376340)
 In addition, we find B periodic oscillations superimposedon the classical commensurability peaks at temperatures as high as 1.7 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 20, 'x', 2],[37.0, 1.7, 'K', 0]

B
###Electronic properties of antidot lattices fabricated by atomic force lithography|A. Dorn,A. Fuhrer,T. Ihn,T. Heinzel,K. Ensslin,W. Wegscheider,M. Bichler###
(376349, 376349)
 In addition, we find B periodic oscillations superimposedon the classical commensurability peaks at temperatures as high as 1.7 K.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 20, 'x', 2],[28.0, 1.7, 'K', 0]

Co/Cu/Co
###Non-collinear spin transfer in Co/Cu/Co multilayers|M. D. Stiles,A. Zangwill###
(376610, 376614)
Non-collinear spin transfer in Co/Cu/Co multilayers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Co/Cu/Co
###Non-collinear spin transfer in Co/Cu/Co multilayers|M. D. Stiles,A. Zangwill###
(376756, 376760)
 The second part incorporates botheffects into a matrix Boltzmann equation and reports numerical results forcurrent polarization, spin accumulation, magnetoresistance, and spin-transfertorques for Co/Cu/Co multilayers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

La0.7Ca0.3MnO3
###Anisotropic strains, metal-insulator transition, and magnetoresistance of La$_{0.7}$Ca$_{0.3}$MnO$_{3}$ films|J. H. Song,J. H. Park,Y. H. Jeong,T. Y. Koo###
(376814, 376820)
Anisotropic strains, metal-insulator transition, and magnetoresistance of La0.7Ca0.3MnO3 films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.7Ca0.3MnO3
###Anisotropic strains, metal-insulator transition, and magnetoresistance of La$_{0.7}$Ca$_{0.3}$MnO$_{3}$ films|J. H. Song,J. H. Park,Y. H. Jeong,T. Y. Koo###
(376835, 376841)
 Thin films of perovskite manganite La0.7Ca0.3MnO3 were grownepitaxially on various substrates by either the pulsed laser deposition methodor laser molecular beam epitaxy.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.7Ca0.3MnO3
###Colossal Magnetoresistance is a Griffiths Singularity|M. B. Salamon,P. Lin,S. H. Chun###
(377127, 377133)
This approach explains unusual aspects of susceptibility and heat capacity datafrom a single crystal of La0.7Ca0.3MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Ferromagnetism in Diluted Magnetic Semiconductor Heterojunction Systems|Byounghak Lee,T. Jungwirth,A. H. MacDonald###
(377220, 377220)
 In this article we discuss the physics ofDMS ferromagnetism in systems with semiconductor heterojunctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Ferromagnetism in Diluted Magnetic Semiconductor Heterojunction Systems|Byounghak Lee,T. Jungwirth,A. H. MacDonald###
(377239, 377239)
 In this article we discuss the physics ofDMS ferromagnetism in systems with semiconductor heterojunctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cd2Re2O7
###The second phase transition in the pyrochlore oxide Cd2Re2O7|Zenji Hiroi,Jun-Ichi Yamaura,Yuji Muraoka,Masafumi Hanawa###
(377353, 377358)
The second phase transition in the pyrochlore oxide Cd2Re2O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6363636363636364,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 120, 'K', 1],[44.0, 200, 'K', 1],[60.0, 1.0, 'K', 1]

Cd2Re2O7
###The second phase transition in the pyrochlore oxide Cd2Re2O7|Zenji Hiroi,Jun-Ichi Yamaura,Yuji Muraoka,Masafumi Hanawa###
(377385, 377390)
 Evidence for another phase transition at 120 K in the metallic pyrochloreoxide Cd2Re2O7, following the structural transition at 200 K and followed bythe superconducting transition at 1.0 K, is given through resistivity,magnetoresistance, specific heat, and X<missing VAR>-ray diffraction measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6363636363636364,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 120, 'K', 0],[12.0, 200, 'K', 0],[28.0, 1.0, 'K', 0]

N
###Universal angular magnetoresistance and spin torque in ferromagnetic/normal metal hybrids|Gerrit E. W. Bauer,Yaroslav Tserkovnyak,Daniel Huertas-Hernando,Arne Brataas###
(377763, 377763)
 The electrical resistance of ferromagnetic/normal-metal (F/N)heterostructures depends on the nature of the junctions which may be tunnelbarriers, point contacts, or intermetallic interfaces.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F/N/F
###Universal angular magnetoresistance and spin torque in ferromagnetic/normal metal hybrids|Gerrit E. W. Bauer,Yaroslav Tserkovnyak,Daniel Huertas-Hernando,Arne Brataas###
(377825, 377829)
 For all junction types,the resistance of disordered F/N/F perpendicular spin valves as a function ofthe angle between magnetization vectors is shown to obey a simple universallaw.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

F
###Conduction Anisotropy, Hall Effect, and Magnetoresistance of (TMTSF)2ReO4 at High Temperatures|Bojana Korin-Hamzic,Emil Tafra,Mario Basletic,Amir Hamzic,Gabriele Untereiner,Martin Dressel###
(377957, 377957)
Conduction Anisotropy, Hall Effect, and Magnetoresistance of (TMTSF)2ReO4 at High Temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 180, 'K', 1]

ReO4
###Conduction Anisotropy, Hall Effect, and Magnetoresistance of (TMTSF)2ReO4 at High Temperatures|Bojana Korin-Hamzic,Emil Tafra,Mario Basletic,Amir Hamzic,Gabriele Untereiner,Martin Dressel###
(377960, 377962)
Conduction Anisotropy, Hall Effect, and Magnetoresistance of (TMTSF)2ReO4 at High Temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 180, 'K', 1]

F
###Conduction Anisotropy, Hall Effect, and Magnetoresistance of (TMTSF)2ReO4 at High Temperatures|Bojana Korin-Hamzic,Emil Tafra,Mario Basletic,Amir Hamzic,Gabriele Untereiner,Martin Dressel###
(378001, 378001)
 We investigated the transport properties of the quasi one-dimensional organicmetal (TMTSF)2ReO4 above the anion-ordering metal-insulator transition (T<missing VAR>AOapprox 180K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 180, 'K', 0]

ReO4
###Conduction Anisotropy, Hall Effect, and Magnetoresistance of (TMTSF)2ReO4 at High Temperatures|Bojana Korin-Hamzic,Emil Tafra,Mario Basletic,Amir Hamzic,Gabriele Untereiner,Martin Dressel###
(378004, 378006)
 We investigated the transport properties of the quasi one-dimensional organicmetal (TMTSF)2ReO4 above the anion-ordering metal-insulator transition (T<missing VAR>AOapprox 180K).
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 180, 'K', 0]

O
###Conduction Anisotropy, Hall Effect, and Magnetoresistance of (TMTSF)2ReO4 at High Temperatures|Bojana Korin-Hamzic,Emil Tafra,Mario Basletic,Amir Hamzic,Gabriele Untereiner,Martin Dressel###
(378025, 378025)
 We investigated the transport properties of the quasi one-dimensional organicmetal (TMTSF)2ReO4 above the anion-ordering metal-insulator transition (T<missing VAR>AOapprox 180K).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 180, 'K', 0]

In
###Theoretical Studies of Quantum Interference in Electronic Transport Through Carbon Nanotubes|W. Iwo Babiaczyk,Bogdan. R. Bulka###
(378212, 378212)
 In the calculations multiple scattering on the contacts andinterference processes were taken into account.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###A key to room-temperature ferromagnetism in Fe-doped ZnO: Cu|S-J. Han,J. W. Song,C. -H. Yang,S. H. Park,J. -H. Park,Y. H. Jeong###
(378351, 378351)
A key to room-temperature ferromagnetism in Fe-doped ZnO Cu.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 550, 'K', 3]

ZnO
###A key to room-temperature ferromagnetism in Fe-doped ZnO: Cu|S-J. Han,J. W. Song,C. -H. Yang,S. H. Park,J. -H. Park,Y. H. Jeong###
(378355, 378356)
A key to room-temperature ferromagnetism in Fe-doped ZnO Cu.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 550, 'K', 3]

Cu
###A key to room-temperature ferromagnetism in Fe-doped ZnO: Cu|S-J. Han,J. W. Song,C. -H. Yang,S. H. Park,J. -H. Park,Y. H. Jeong###
(378358, 378358)
A key to room-temperature ferromagnetism in Fe-doped ZnO Cu.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 550, 'K', 3]

Zn1-xFe
###A key to room-temperature ferromagnetism in Fe-doped ZnO: Cu|S-J. Han,J. W. Song,C. -H. Yang,S. H. Park,J. -H. Park,Y. H. Jeong###
(378377, 378381)
 Successful synthesis of room-temperature ferromagnetic semiconductors,Zn1-xFex<missing VAR>O, is reported.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[66.0, 550, 'K', 2]

O
###A key to room-temperature ferromagnetism in Fe-doped ZnO: Cu|S-J. Han,J. W. Song,C. -H. Yang,S. H. Park,J. -H. Park,Y. H. Jeong###
(378383, 378383)
 Successful synthesis of room-temperature ferromagnetic semiconductors,Zn1-xFex<missing VAR>O, is reported.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 550, 'K', 2]

Zn1-xFe
###A key to room-temperature ferromagnetism in Fe-doped ZnO: Cu|S-J. Han,J. W. Song,C. -H. Yang,S. H. Park,J. -H. Park,Y. H. Jeong###
(378412, 378416)
 The essential ingredient in achievingroom-temperature ferromagnetism in bulk Zn1-xFex<missing VAR>O was found to beadditional Cu doping.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[31.0, 550, 'K', 1]

O
###A key to room-temperature ferromagnetism in Fe-doped ZnO: Cu|S-J. Han,J. W. Song,C. -H. Yang,S. H. Park,J. -H. Park,Y. H. Jeong###
(378418, 378418)
 The essential ingredient in achievingroom-temperature ferromagnetism in bulk Zn1-xFex<missing VAR>O was found to beadditional Cu doping.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 550, 'K', 1]

Cu
###A key to room-temperature ferromagnetism in Fe-doped ZnO: Cu|S-J. Han,J. W. Song,C. -H. Yang,S. H. Park,J. -H. Park,Y. H. Jeong###
(378431, 378431)
 The essential ingredient in achievingroom-temperature ferromagnetism in bulk Zn1-xFex<missing VAR>O was found to beadditional Cu doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 550, 'K', 1]

Zn0.94Fe0.05Cu0.01O
###A key to room-temperature ferromagnetism in Fe-doped ZnO: Cu|S-J. Han,J. W. Song,C. -H. Yang,S. H. Park,J. -H. Park,Y. H. Jeong###
(378456, 378462)
 A transition temperature as high as 550 K was obtained inZn0.94Fe0.05Cu0.01O; the saturation magnetization at roomtemperature reached a value of 0.75 murm B per Fe.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.025,0,0,0.005,0.47,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 550, 'K', 0]

B
###A key to room-temperature ferromagnetism in Fe-doped ZnO: Cu|S-J. Han,J. W. Song,C. -H. Yang,S. H. Park,J. -H. Park,Y. H. Jeong###
(378491, 378491)
 A transition temperature as high as 550 K was obtained inZn0.94Fe0.05Cu0.01O; the saturation magnetization at roomtemperature reached a value of 0.75 murm B per Fe.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 550, 'K', 0]

Fe
###A key to room-temperature ferromagnetism in Fe-doped ZnO: Cu|S-J. Han,J. W. Song,C. -H. Yang,S. H. Park,J. -H. Park,Y. H. Jeong###
(378495, 378495)
 A transition temperature as high as 550 K was obtained inZn0.94Fe0.05Cu0.01O; the saturation magnetization at roomtemperature reached a value of 0.75 murm B per Fe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 550, 'K', 0]

K
###A key to room-temperature ferromagnetism in Fe-doped ZnO: Cu|S-J. Han,J. W. Song,C. -H. Yang,S. H. Park,J. -H. Park,Y. H. Jeong###
(378513, 378513)
 Largemagnetoresistance was also observed below 100 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 550, 'K', 1]

C
###Magnetic phase diagram of doped CMR manganites|Unjong Yu,Yookyung Jo,B. I. Min###
(378534, 378534)
Magnetic phase diagram of doped CMR manganites.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Magnetic phase diagram of doped CMR manganites|Unjong Yu,Yookyung Jo,B. I. Min###
(378558, 378558)
 The magnetic phase diagram of the colossal magnetoresistance (CMR) manganitesis determined based on the Hamiltonian incorporating the double-exchange (DE)interaction between degenerate Mn eg orbitals and the antiferromagnetic (AF)superexchange interaction between Mn t2g spins.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Magnetic phase diagram of doped CMR manganites|Unjong Yu,Yookyung Jo,B. I. Min###
(378598, 378598)
 The magnetic phase diagram of the colossal magnetoresistance (CMR) manganitesis determined based on the Hamiltonian incorporating the double-exchange (DE)interaction between degenerate Mn eg orbitals and the antiferromagnetic (AF)superexchange interaction between Mn t2g spins.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Magnetic phase diagram of doped CMR manganites|Unjong Yu,Yookyung Jo,B. I. Min###
(378613, 378613)
 The magnetic phase diagram of the colossal magnetoresistance (CMR) manganitesis determined based on the Hamiltonian incorporating the double-exchange (DE)interaction between degenerate Mn eg orbitals and the antiferromagnetic (AF)superexchange interaction between Mn t2g spins.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Magnetic phase diagram of doped CMR manganites|Unjong Yu,Yookyung Jo,B. I. Min###
(378623, 378623)
 The magnetic phase diagram of the colossal magnetoresistance (CMR) manganitesis determined based on the Hamiltonian incorporating the double-exchange (DE)interaction between degenerate Mn eg orbitals and the antiferromagnetic (AF)superexchange interaction between Mn t2g spins.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Magnetic phase diagram of doped CMR manganites|Unjong Yu,Yookyung Jo,B. I. Min###
(378680, 378680)
 We have employed therigorous quantum mechanical formalism and obtained the finite temperature phasediagram which describes well the commonly observed features in CMR manganites.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Magnetic phase diagram of doped CMR manganites|Unjong Yu,Yookyung Jo,B. I. Min###
(378700, 378700)
We have also shown that the CE<missing VAR>-type AF structure cannot be stabilized atx<missing VAR>0.5 in this model.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Magnetic phase diagram of doped CMR manganites|Unjong Yu,Yookyung Jo,B. I. Min###
(378706, 378706)
We have also shown that the CE<missing VAR>-type AF structure cannot be stabilized atx<missing VAR>0.5 in this model.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Current and Noise in a FM/quantum dot/FM System|F. M. Souza,J. C. Egues,A. P. Jauho###
(378747, 378747)
Current and Noise in a FM<missing VAR>/quantum dot/FM<missing VAR> System.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Current and Noise in a FM/quantum dot/FM System|F. M. Souza,J. C. Egues,A. P. Jauho###
(378754, 378754)
Current and Noise in a FM<missing VAR>/quantum dot/FM<missing VAR> System.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Current and Noise in a FM/quantum dot/FM System|F. M. Souza,J. C. Egues,A. P. Jauho###
(378792, 378792)
 Using the Keldysh nonequilibrium technique we calculate current, noise andFano factor in a ferromagnetic(FM)-quantum dot-ferromagnetic(FM) system withCoulomb interaction and spin-flip scattering in the dot.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Current and Noise in a FM/quantum dot/FM System|F. M. Souza,J. C. Egues,A. P. Jauho###
(378802, 378802)
 Using the Keldysh nonequilibrium technique we calculate current, noise andFano factor in a ferromagnetic(FM)-quantum dot-ferromagnetic(FM) system withCoulomb interaction and spin-flip scattering in the dot.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Current and Noise in a FM/quantum dot/FM System|F. M. Souza,J. C. Egues,A. P. Jauho###
(378847, 378847)
 The lead polarizationsare considered in both parallel P and antiparallel AP alignments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Current and Noise in a FM/quantum dot/FM System|F. M. Souza,J. C. Egues,A. P. Jauho###
(378854, 378854)
 The lead polarizationsare considered in both parallel P and antiparallel AP alignments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Current and Noise in a FM/quantum dot/FM System|F. M. Souza,J. C. Egues,A. P. Jauho###
(378877, 378877)
 We show thatspin-flip can increase both AP-current and AP-noise, while the P-current andP-noise are almost insensible to it.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Current and Noise in a FM/quantum dot/FM System|F. M. Souza,J. C. Egues,A. P. Jauho###
(378884, 378884)
 We show thatspin-flip can increase both AP-current and AP-noise, while the P-current andP-noise are almost insensible to it.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Current and Noise in a FM/quantum dot/FM System|F. M. Souza,J. C. Egues,A. P. Jauho###
(378893, 378893)
 We show thatspin-flip can increase both AP-current and AP-noise, while the P-current andP-noise are almost insensible to it.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Current and Noise in a FM/quantum dot/FM System|F. M. Souza,J. C. Egues,A. P. Jauho###
(378900, 378900)
 We show thatspin-flip can increase both AP-current and AP-noise, while the P-current andP-noise are almost insensible to it.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F1
###Electron space charge effect on spin injection into semiconductors|Yue Yu,Jinbin Li,S. T. Chui###
(379000, 379001)
 We consider spin polarized transport in aferromagnet-insulator/semiconductor/insulator-ferromagnet (F1-I-S-I-F2)junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Electron space charge effect on spin injection into semiconductors|Yue Yu,Jinbin Li,S. T. Chui###
(379003, 379003)
 We consider spin polarized transport in aferromagnet-insulator/semiconductor/insulator-ferromagnet (F1-I-S-I-F2)junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Electron space charge effect on spin injection into semiconductors|Yue Yu,Jinbin Li,S. T. Chui###
(379005, 379005)
 We consider spin polarized transport in aferromagnet-insulator/semiconductor/insulator-ferromagnet (F1-I-S-I-F2)junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Electron space charge effect on spin injection into semiconductors|Yue Yu,Jinbin Li,S. T. Chui###
(379007, 379007)
 We consider spin polarized transport in aferromagnet-insulator/semiconductor/insulator-ferromagnet (F1-I-S-I-F2)junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F2
###Electron space charge effect on spin injection into semiconductors|Yue Yu,Jinbin Li,S. T. Chui###
(379009, 379010)
 We consider spin polarized transport in aferromagnet-insulator/semiconductor/insulator-ferromagnet (F1-I-S-I-F2)junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.7Sr0.3MnO3
###Intrinsic Inhomogeneities in Manganite Thin Films Investigated with Scanning Tunneling Spectroscopy|T. Becker,C. Streng,Y. Luo,V. Moshnyaga,B. Damaschke,Nic Shannon,K. Samwer###
(379185, 379191)
 Thin films of La0.7Sr0.3MnO3 on MgO show a metal insulator transition andcolossal magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Intrinsic Inhomogeneities in Manganite Thin Films Investigated with Scanning Tunneling Spectroscopy|T. Becker,C. Streng,Y. Luo,V. Moshnyaga,B. Damaschke,Nic Shannon,K. Samwer###
(379195, 379196)
 Thin films of La0.7Sr0.3MnO3 on MgO show a metal insulator transition andcolossal magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###Effect of annealing on carrier density and Curie temperature in epitaxial (Ga,Mn)As thin films|B. Sorensen,J. Sadowski,R. Mathieu,P. Svedlindh,P. E. Lindelof###
(379364, 379364)
Effect of annealing on carrier density and Curie temperature in epitaxial (Ga,Mn)As thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 5, 'nm', 1],[74.0, 20, 'nm', 1]

Mn
###Effect of annealing on carrier density and Curie temperature in epitaxial (Ga,Mn)As thin films|B. Sorensen,J. Sadowski,R. Mathieu,P. Svedlindh,P. E. Lindelof###
(379366, 379366)
Effect of annealing on carrier density and Curie temperature in epitaxial (Ga,Mn)As thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 5, 'nm', 1],[72.0, 20, 'nm', 1]

As
###Effect of annealing on carrier density and Curie temperature in epitaxial (Ga,Mn)As thin films|B. Sorensen,J. Sadowski,R. Mathieu,P. Svedlindh,P. E. Lindelof###
(379368, 379368)
Effect of annealing on carrier density and Curie temperature in epitaxial (Ga,Mn)As thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 5, 'nm', 1],[70.0, 20, 'nm', 1]

Ga
###Effect of annealing on carrier density and Curie temperature in epitaxial (Ga,Mn)As thin films|B. Sorensen,J. Sadowski,R. Mathieu,P. Svedlindh,P. E. Lindelof###
(379415, 379415)
 We report a clear correspondence between changes in the Curie temperature andcarrier density upon annealing in epitaxially grown (Ga,Mn)As layers withthicknesses in the range between 5 nm and 20 nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 5, 'nm', 0],[23.0, 20, 'nm', 0]

Mn
###Effect of annealing on carrier density and Curie temperature in epitaxial (Ga,Mn)As thin films|B. Sorensen,J. Sadowski,R. Mathieu,P. Svedlindh,P. E. Lindelof###
(379417, 379417)
 We report a clear correspondence between changes in the Curie temperature andcarrier density upon annealing in epitaxially grown (Ga,Mn)As layers withthicknesses in the range between 5 nm and 20 nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 5, 'nm', 0],[21.0, 20, 'nm', 0]

As
###Effect of annealing on carrier density and Curie temperature in epitaxial (Ga,Mn)As thin films|B. Sorensen,J. Sadowski,R. Mathieu,P. Svedlindh,P. E. Lindelof###
(379419, 379419)
 We report a clear correspondence between changes in the Curie temperature andcarrier density upon annealing in epitaxially grown (Ga,Mn)As layers withthicknesses in the range between 5 nm and 20 nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 5, 'nm', 0],[19.0, 20, 'nm', 0]

Ga
###Effect of annealing on carrier density and Curie temperature in epitaxial (Ga,Mn)As thin films|B. Sorensen,J. Sadowski,R. Mathieu,P. Svedlindh,P. E. Lindelof###
(379466, 379466)
 The changes are dependent onthe layer thickness, indicating that the (Ga,Mn)As - GaAs interface hasimportance for the physical properties of the (Ga,Mn)As layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 5, 'nm', 1],[28.0, 20, 'nm', 1]

Mn
###Effect of annealing on carrier density and Curie temperature in epitaxial (Ga,Mn)As thin films|B. Sorensen,J. Sadowski,R. Mathieu,P. Svedlindh,P. E. Lindelof###
(379468, 379468)
 The changes are dependent onthe layer thickness, indicating that the (Ga,Mn)As - GaAs interface hasimportance for the physical properties of the (Ga,Mn)As layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 5, 'nm', 1],[30.0, 20, 'nm', 1]

As
###Effect of annealing on carrier density and Curie temperature in epitaxial (Ga,Mn)As thin films|B. Sorensen,J. Sadowski,R. Mathieu,P. Svedlindh,P. E. Lindelof###
(379470, 379470)
 The changes are dependent onthe layer thickness, indicating that the (Ga,Mn)As - GaAs interface hasimportance for the physical properties of the (Ga,Mn)As layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 5, 'nm', 1],[32.0, 20, 'nm', 1]

GaAs
###Effect of annealing on carrier density and Curie temperature in epitaxial (Ga,Mn)As thin films|B. Sorensen,J. Sadowski,R. Mathieu,P. Svedlindh,P. E. Lindelof###
(379474, 379475)
 The changes are dependent onthe layer thickness, indicating that the (Ga,Mn)As - GaAs interface hasimportance for the physical properties of the (Ga,Mn)As layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 5, 'nm', 1],[36.0, 20, 'nm', 1]

Ga
###Effect of annealing on carrier density and Curie temperature in epitaxial (Ga,Mn)As thin films|B. Sorensen,J. Sadowski,R. Mathieu,P. Svedlindh,P. E. Lindelof###
(379497, 379497)
 The changes are dependent onthe layer thickness, indicating that the (Ga,Mn)As - GaAs interface hasimportance for the physical properties of the (Ga,Mn)As layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 5, 'nm', 1],[59.0, 20, 'nm', 1]

Mn
###Effect of annealing on carrier density and Curie temperature in epitaxial (Ga,Mn)As thin films|B. Sorensen,J. Sadowski,R. Mathieu,P. Svedlindh,P. E. Lindelof###
(379499, 379499)
 The changes are dependent onthe layer thickness, indicating that the (Ga,Mn)As - GaAs interface hasimportance for the physical properties of the (Ga,Mn)As layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 5, 'nm', 1],[61.0, 20, 'nm', 1]

As
###Effect of annealing on carrier density and Curie temperature in epitaxial (Ga,Mn)As thin films|B. Sorensen,J. Sadowski,R. Mathieu,P. Svedlindh,P. E. Lindelof###
(379501, 379501)
 The changes are dependent onthe layer thickness, indicating that the (Ga,Mn)As - GaAs interface hasimportance for the physical properties of the (Ga,Mn)As layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 5, 'nm', 1],[63.0, 20, 'nm', 1]

Ga
###Effect of annealing on carrier density and Curie temperature in epitaxial (Ga,Mn)As thin films|B. Sorensen,J. Sadowski,R. Mathieu,P. Svedlindh,P. E. Lindelof###
(379526, 379526)
 Themagnetoresistance shows additional features when compared to thick (Ga,Mn)Aslayers, that are at present of unknown origin.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 5, 'nm', 2],[88.0, 20, 'nm', 2]

Mn
###Effect of annealing on carrier density and Curie temperature in epitaxial (Ga,Mn)As thin films|B. Sorensen,J. Sadowski,R. Mathieu,P. Svedlindh,P. E. Lindelof###
(379528, 379528)
 Themagnetoresistance shows additional features when compared to thick (Ga,Mn)Aslayers, that are at present of unknown origin.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 5, 'nm', 2],[90.0, 20, 'nm', 2]

As
###Effect of annealing on carrier density and Curie temperature in epitaxial (Ga,Mn)As thin films|B. Sorensen,J. Sadowski,R. Mathieu,P. Svedlindh,P. E. Lindelof###
(379530, 379530)
 Themagnetoresistance shows additional features when compared to thick (Ga,Mn)Aslayers, that are at present of unknown origin.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 5, 'nm', 2],[92.0, 20, 'nm', 2]

Cr
###The magnetoresistive behavior of Cr-doped manganites Pr0.44Sr0.56MnO3|Z. Jirak,J. Hejtmanek,K. Knizek,M. Marysko,C. Martin,A. Maignan,M. Hervieu###
(379567, 379567)
The magnetoresistive behavior of Cr-doped manganites Pr0.44Sr0.56MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pr0.44Sr0.56MnO3
###The magnetoresistive behavior of Cr-doped manganites Pr0.44Sr0.56MnO3|Z. Jirak,J. Hejtmanek,K. Knizek,M. Marysko,C. Martin,A. Maignan,M. Hervieu###
(379573, 379579)
The magnetoresistive behavior of Cr-doped manganites Pr0.44Sr0.56MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.11200000000000002,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.088,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr
###The magnetoresistive behavior of Cr-doped manganites Pr0.44Sr0.56MnO3|Z. Jirak,J. Hejtmanek,K. Knizek,M. Marysko,C. Martin,A. Maignan,M. Hervieu###
(379606, 379606)
 A complex structural, magnetic and electric transport investigation showsthat the Cr doping on Mn sites in the A-type antiferromagnet Pr0.44Sr0.56MnO3provokes a non-uniform magnetic state with coexisting FM<missing VAR> and AFM<missing VAR> regions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###The magnetoresistive behavior of Cr-doped manganites Pr0.44Sr0.56MnO3|Z. Jirak,J. Hejtmanek,K. Knizek,M. Marysko,C. Martin,A. Maignan,M. Hervieu###
(379612, 379612)
 A complex structural, magnetic and electric transport investigation showsthat the Cr doping on Mn sites in the A-type antiferromagnet Pr0.44Sr0.56MnO3provokes a non-uniform magnetic state with coexisting FM<missing VAR> and AFM<missing VAR> regions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pr0.44Sr0.56MnO3
###The magnetoresistive behavior of Cr-doped manganites Pr0.44Sr0.56MnO3|Z. Jirak,J. Hejtmanek,K. Knizek,M. Marysko,C. Martin,A. Maignan,M. Hervieu###
(379626, 379632)
 A complex structural, magnetic and electric transport investigation showsthat the Cr doping on Mn sites in the A-type antiferromagnet Pr0.44Sr0.56MnO3provokes a non-uniform magnetic state with coexisting FM<missing VAR> and AFM<missing VAR> regions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.11200000000000002,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.088,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###The magnetoresistive behavior of Cr-doped manganites Pr0.44Sr0.56MnO3|Z. Jirak,J. Hejtmanek,K. Knizek,M. Marysko,C. Martin,A. Maignan,M. Hervieu###
(379651, 379651)
 A complex structural, magnetic and electric transport investigation showsthat the Cr doping on Mn sites in the A-type antiferromagnet Pr0.44Sr0.56MnO3provokes a non-uniform magnetic state with coexisting FM<missing VAR> and AFM<missing VAR> regions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###The magnetoresistive behavior of Cr-doped manganites Pr0.44Sr0.56MnO3|Z. Jirak,J. Hejtmanek,K. Knizek,M. Marysko,C. Martin,A. Maignan,M. Hervieu###
(379657, 379657)
 A complex structural, magnetic and electric transport investigation showsthat the Cr doping on Mn sites in the A-type antiferromagnet Pr0.44Sr0.56MnO3provokes a non-uniform magnetic state with coexisting FM<missing VAR> and AFM<missing VAR> regions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr
###The magnetoresistive behavior of Cr-doped manganites Pr0.44Sr0.56MnO3|Z. Jirak,J. Hejtmanek,K. Knizek,M. Marysko,C. Martin,A. Maignan,M. Hervieu###
(379753, 379753)
 A particularly largemagnetoresistance encountered in a broad range of temperatures for samples withCr doping of 4 - 6 % supports such idea.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###In-Plane Magnetodrag between Dilute Two-Dimensional Systems|R. Pillarisetty,Hwayong Noh,E. Tutuc,E. P. De Poortere,D. C. Tsui,M. Shayegan###
(379782, 379782)
In-Plane Magnetodrag between Dilute Two-Dimensional Systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###In-Plane Magnetodrag between Dilute Two-Dimensional Systems|R. Pillarisetty,Hwayong Noh,E. Tutuc,E. P. De Poortere,D. C. Tsui,M. Shayegan###
(379914, 379914)
 In addition, wehave found that the enhancement to the drag from the in-plane field exhibits astrong maximum when both layer densities are matched.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SF
###Proximity Effect and Spontaneous Vortex Phase in Planar SF-Structures|V. V. Ryazanov,V. A. Oboznov,A. S. Prokofiev,S. V. Dubonos###
(379994, 379995)
Proximity Effect and Spontaneous Vortex Phase in Planar SF-Structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SF
###Proximity Effect and Spontaneous Vortex Phase in Planar SF-Structures|V. V. Ryazanov,V. A. Oboznov,A. S. Prokofiev,S. V. Dubonos###
(380008, 380009)
 The proximity effect in SF structures was examined.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SF
###Proximity Effect and Spontaneous Vortex Phase in Planar SF-Structures|V. V. Ryazanov,V. A. Oboznov,A. S. Prokofiev,S. V. Dubonos###
(380066, 380067)
 It is shown that, due tothe oscillations of the induced superconducting order parameter in aferromagnet, the critical temperature of an SF-bilayer becomes minimal when thethickness of the ferromagnetic layer is close to a quarter of the period ofspatial oscillations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs/AlGaAs
###New collective zero-resistance states in GaAs/AlGaAs heterostructures|J. C. Phillips###
(380195, 380200)
New collective zero-resistance states in GaAs/AlGaAs heterostructures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Nd2-xCe
###Suppression of 2D superconductivity by the magnetic field: quantum corrections vs superconductor-insulator transition|V. F. Gantmakher,S. N. Ermolov,G. E. Tsydynzhapov,A. A. Zhukov,T. I. Baturina###
(380394, 380398)
 Magnetotransport of superconducting Nd2-xCex<missing VAR>CuO4y<missing VAR> (NdCeCuO) films isstudied in the temperature interval 0.3-30 K.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[31.0, 2, 'D', 1]

CuO4
###Suppression of 2D superconductivity by the magnetic field: quantum corrections vs superconductor-insulator transition|V. F. Gantmakher,S. N. Ermolov,G. E. Tsydynzhapov,A. A. Zhukov,T. I. Baturina###
(380400, 380402)
 Magnetotransport of superconducting Nd2-xCex<missing VAR>CuO4y<missing VAR> (NdCeCuO) films isstudied in the temperature interval 0.3-30 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 2, 'D', 1]

(NdCeCuO)
###Suppression of 2D superconductivity by the magnetic field: quantum corrections vs superconductor-insulator transition|V. F. Gantmakher,S. N. Ermolov,G. E. Tsydynzhapov,A. A. Zhukov,T. I. Baturina###
(380405, 380410)
 Magnetotransport of superconducting Nd2-xCex<missing VAR>CuO4y<missing VAR> (NdCeCuO) films isstudied in the temperature interval 0.3-30 K.
Featurization successful!
0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 2, 'D', 1]

K
###Suppression of 2D superconductivity by the magnetic field: quantum corrections vs superconductor-insulator transition|V. F. Gantmakher,S. N. Ermolov,G. E. Tsydynzhapov,A. A. Zhukov,T. I. Baturina###
(380431, 380431)
 Magnetotransport of superconducting Nd2-xCex<missing VAR>CuO4y<missing VAR> (NdCeCuO) films isstudied in the temperature interval 0.3-30 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 2, 'D', 1]

SI
###Suppression of 2D superconductivity by the magnetic field: quantum corrections vs superconductor-insulator transition|V. F. Gantmakher,S. N. Ermolov,G. E. Tsydynzhapov,A. A. Zhukov,T. I. Baturina###
(380534, 380535)
 Comparison with themodel of the field-induced superconductor-insulator transition (SIT) isincluded and a crossover between these two theoretical approaches is discussed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[171.0, 2, 'D', 3]

Sr4Ru3O10
###Competing Ground States in Triple-layered Sr4Ru3O10: Verging on Itinerant Ferromagnetism with Critical Fluctuations|G. Cao,L. Balicas,W. H. Song,Y. P. Sun,Y. Xin,V. A. Bondarenko,J. W. Brill,S. Parkin###
(380585, 380590)
Competing Ground States in Triple-layered Sr4Ru3O10 Verging on Itinerant Ferromagnetism with Critical Fluctuations.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5882352941176471,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23529411764705882,0,0,0,0,0,0.17647058823529413,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr4Ru3O10
###Competing Ground States in Triple-layered Sr4Ru3O10: Verging on Itinerant Ferromagnetism with Critical Fluctuations|G. Cao,L. Balicas,W. H. Song,Y. P. Sun,Y. Xin,V. A. Bondarenko,J. W. Brill,S. Parkin###
(380607, 380612)
 Sr4Ru3O10 is characterized by a sharp metamagnetic transition andferromagnetic behavior occurring within the basal plane and along the c<missing VAR>-axis,respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5882352941176471,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23529411764705882,0,0,0,0,0,0.17647058823529413,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Competing Ground States in Triple-layered Sr4Ru3O10: Verging on Itinerant Ferromagnetism with Critical Fluctuations|G. Cao,L. Balicas,W. H. Song,Y. P. Sun,Y. Xin,V. A. Bondarenko,J. W. Brill,S. Parkin###
(380669, 380669)
 Resistivity at magnetic field, B, exhibits low-frequency quantumoscillations when Bc<missing VAR>-axis and large magnetoresistivity accompanied bycritical fluctuations driven by the metamagnetism when Bc<missing VAR>-axis.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Competing Ground States in Triple-layered Sr4Ru3O10: Verging on Itinerant Ferromagnetism with Critical Fluctuations|G. Cao,L. Balicas,W. H. Song,Y. P. Sun,Y. Xin,V. A. Bondarenko,J. W. Brill,S. Parkin###
(380685, 380685)
 Resistivity at magnetic field, B, exhibits low-frequency quantumoscillations when Bc<missing VAR>-axis and large magnetoresistivity accompanied bycritical fluctuations driven by the metamagnetism when Bc<missing VAR>-axis.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Competing Ground States in Triple-layered Sr4Ru3O10: Verging on Itinerant Ferromagnetism with Critical Fluctuations|G. Cao,L. Balicas,W. H. Song,Y. P. Sun,Y. Xin,V. A. Bondarenko,J. W. Brill,S. Parkin###
(380715, 380715)
 Resistivity at magnetic field, B, exhibits low-frequency quantumoscillations when Bc<missing VAR>-axis and large magnetoresistivity accompanied bycritical fluctuations driven by the metamagnetism when Bc<missing VAR>-axis.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga1-x
###Effect of annealing on magnetic and magnetotransport properties of Ga1-xMnxAs epilayers|I. Kuryliszyn-Kudelska,T. Wojtowicz,X. Liu,J. K. Furdyna,W. Dobrowolski,J. Z. Domagala,E. Lusakowska,M. Goiran,E. Haanappel,O. Portugall###
(380821, 380824)
Effect of annealing on magnetic and magnetotransport properties of Ga1-xMnxAs epilayers.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

As
###Effect of annealing on magnetic and magnetotransport properties of Ga1-xMnxAs epilayers|I. Kuryliszyn-Kudelska,T. Wojtowicz,X. Liu,J. K. Furdyna,W. Dobrowolski,J. Z. Domagala,E. Lusakowska,M. Goiran,E. Haanappel,O. Portugall###
(380826, 380826)
Effect of annealing on magnetic and magnetotransport properties of Ga1-xMnxAs epilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OK
###Effect of annealing on magnetic and magnetotransport properties of Ga1-xMnxAs epilayers|I. Kuryliszyn-Kudelska,T. Wojtowicz,X. Liu,J. K. Furdyna,W. Dobrowolski,J. Z. Domagala,E. Lusakowska,M. Goiran,E. Haanappel,O. Portugall###
(380858, 380859)
 High-field magnetic measurements performed with the use of magnetoopticalKerr effect (M<missing VAR>OKE) in the polar configuration as well as high-field andlow-field magnetotransport studies were carried out on Ga1-xMnxAs epilayersgrown by low temperature molecular beam epitaxy, and subsequently annealedunder various conditions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga1-x
###Effect of annealing on magnetic and magnetotransport properties of Ga1-xMnxAs epilayers|I. Kuryliszyn-Kudelska,T. Wojtowicz,X. Liu,J. K. Furdyna,W. Dobrowolski,J. Z. Domagala,E. Lusakowska,M. Goiran,E. Haanappel,O. Portugall###
(380900, 380903)
 High-field magnetic measurements performed with the use of magnetoopticalKerr effect (M<missing VAR>OKE) in the polar configuration as well as high-field andlow-field magnetotransport studies were carried out on Ga1-xMnxAs epilayersgrown by low temperature molecular beam epitaxy, and subsequently annealedunder various conditions.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

As
###Effect of annealing on magnetic and magnetotransport properties of Ga1-xMnxAs epilayers|I. Kuryliszyn-Kudelska,T. Wojtowicz,X. Liu,J. K. Furdyna,W. Dobrowolski,J. Z. Domagala,E. Lusakowska,M. Goiran,E. Haanappel,O. Portugall###
(380905, 380905)
 High-field magnetic measurements performed with the use of magnetoopticalKerr effect (M<missing VAR>OKE) in the polar configuration as well as high-field andlow-field magnetotransport studies were carried out on Ga1-xMnxAs epilayersgrown by low temperature molecular beam epitaxy, and subsequently annealedunder various conditions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Giant positive magnetoresistance in metallic VOx thin films|A. D. Rata,V. Kataev,D. Khomskii,T. Hibma###
(381183, 381183)
Giant positive magnetoresistance in metallic VOx thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 70, '%', 3],[103.0, 5, 'T', 3]

V
###Giant positive magnetoresistance in metallic VOx thin films|A. D. Rata,V. Kataev,D. Khomskii,T. Hibma###
(381209, 381209)
 We report on giant positive magnetoresistance effect observed in VOx thinfilms, epitaxially grown on SrTiO3 substrate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 70, '%', 2],[77.0, 5, 'T', 2]

SrTiO3
###Giant positive magnetoresistance in metallic VOx thin films|A. D. Rata,V. Kataev,D. Khomskii,T. Hibma###
(381224, 381227)
 We report on giant positive magnetoresistance effect observed in VOx thinfilms, epitaxially grown on SrTiO3 substrate.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 70, '%', 2],[59.0, 5, 'T', 2]

At
###Giant positive magnetoresistance in metallic VOx thin films|A. D. Rata,V. Kataev,D. Khomskii,T. Hibma###
(381261, 381261)
 At low temperatures itsmagnitude reaches 70% in a magnetic field of 5 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 70, '%', 0],[25.0, 5, 'T', 0]

Co
###Anisotropic magnetoresistance in a 2DEG in a quasi-random magnetic field|A. W. Rushforth,B. L. Gallagher,P. C. Main,A. C. Neumann,M. Henini,C. H. Marrows,B. J. Hickey###
(381616, 381616)
 We present magnetotransport results for a 2D electron gas (2DEG) subject tothe quasi-random magnetic field produced by randomly positioned sub-micron Codots deposited onto the surface of a GaAs/AlGaAs heterostructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 2, 'DEG', 1],[40.0, 2, 'D', 0],[64.0, 2, 'DEG', 1]

GaAs/AlGaAs
###Anisotropic magnetoresistance in a 2DEG in a quasi-random magnetic field|A. W. Rushforth,B. L. Gallagher,P. C. Main,A. C. Neumann,M. Henini,C. H. Marrows,B. J. Hickey###
(381633, 381638)
 We present magnetotransport results for a 2D electron gas (2DEG) subject tothe quasi-random magnetic field produced by randomly positioned sub-micron Codots deposited onto the surface of a GaAs/AlGaAs heterostructure.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[83.0, 2, 'DEG', 1],[57.0, 2, 'D', 0],[42.0, 2, 'DEG', 1]

Si/SiGe
###Remote-doping scattering and the local field corrections in the 2D electron system in a modulation-doped Si/SiGe quantum well|V. T. Dolgopolov,E. V. Deviatov,A. A. Shashkin,U. Wieser,U. Kunze,G. Abstreiter,K. Brunner###
(381976, 381979)
Remote-doping scattering and the local field corrections in the 2D electron system in a modulation-doped Si/SiGe quantum well.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[14.0, 2, 'D', 0],[14.0, 30, '%', 1],[37.0, 2, 'D', 1]

Si/SiGe
###Remote-doping scattering and the local field corrections in the 2D electron system in a modulation-doped Si/SiGe quantum well|V. T. Dolgopolov,E. V. Deviatov,A. A. Shashkin,U. Wieser,U. Kunze,G. Abstreiter,K. Brunner###
(382030, 382033)
 The small, about 30% magnetoresistance at the onset of full spin polarizationin the 2D electron system in a modulation-doped Si/SiGe quantum well givesevidence that it is the remote doping that determines the transport scatteringtime.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[68.0, 2, 'D', 1],[37.0, 30, '%', 0],[14.0, 2, 'D', 0]

GaAs/AlGaAs
###Demonstration of a 1/4 cycle phase shift in the radiation-induced oscillatory-magnetoresistance in GaAs/AlGaAs devices|R. G. Mani,J. H. Smet,K. von Klitzing,V. Narayanamurti,W. B. Johnson,V. Umansky###
(382183, 382188)
Demonstration of a 1/4 cycle phase shift in the radiation-induced oscillatory-magnetoresistance in GaAs/AlGaAs devices.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[122.0, 1, ',', 2],[141.0, 2, '%', 2]

GaAs/AlGaAs
###Demonstration of a 1/4 cycle phase shift in the radiation-induced oscillatory-magnetoresistance in GaAs/AlGaAs devices|R. G. Mani,J. H. Smet,K. von Klitzing,V. Narayanamurti,W. B. Johnson,V. Umansky###
(382222, 382227)
 We examine the phase and the period of the radiation-inducedoscillatory-magnetoresistance in GaAs/AlGaAs devices utilizing in-situ magneticfield calibration by Electron Spin Resonance of DiPhenyl-Picryl-Hydrazal.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[83.0, 1, ',', 1],[102.0, 2, '%', 1]

GaAs/AlGaAs
###Demonstration of a 1/4 cycle phase shift in the radiation-induced oscillatory-magnetoresistance in GaAs/AlGaAs devices|R. G. Mani,J. H. Smet,K. von Klitzing,V. Narayanamurti,W. B. Johnson,V. Umansky###
(382366, 382371)
 Theresults confirm a f<missing VAR>-independent 1/4 cycle phase shift with respect to the hf j<missing VAR>hbaromegac<missing VAR> condition for j<missing VAR> geq 1, and they also suggest a small(approx 2%) reduction in the effective mass ratio, m/m, with respectto the standard value for GaAs/AlGaAs devices.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[56.0, 1, ',', 0],[37.0, 2, '%', 0]

Pr0.67Ca0.33MnO3
###Dynamic Kerr Effect and Spectral Weight Transfer in the Manganites|S. A. McGill,R. I. Miller,O. N. Torrens,A. Mamchik,I-Wei Chen,J. M. Kikkawa###
(382428, 382434)
 We perform pump-probe Kerr spectroscopy in the colossally magnetoresistivemanganite Pr0.67Ca0.33MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.066,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.134,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Interplay between the orbital quantization and Pauli effect in a charge-density-wave organic conductor|M. Kartsovnik,D. Andres,P. Grigoriev,W. Biberacher,H. Mueller###
(382634, 382634)
 The interlayer magnetoresistance of the low-dimensional organic metalalpha-(BEDT-TTF)2KHg(SCN)4 under pressure shows features which are likelyassociated with theoretically predicted field-induced charge-density-wave(FICD<missing VAR>W) transitions.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Interplay between the orbital quantization and Pauli effect in a charge-density-wave organic conductor|M. Kartsovnik,D. Andres,P. Grigoriev,W. Biberacher,H. Mueller###
(382641, 382641)
 The interlayer magnetoresistance of the low-dimensional organic metalalpha-(BEDT-TTF)2KHg(SCN)4 under pressure shows features which are likelyassociated with theoretically predicted field-induced charge-density-wave(FICD<missing VAR>W) transitions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

KHg(SCN)4
###Interplay between the orbital quantization and Pauli effect in a charge-density-wave organic conductor|M. Kartsovnik,D. Andres,P. Grigoriev,W. Biberacher,H. Mueller###
(382644, 382651)
 The interlayer magnetoresistance of the low-dimensional organic metalalpha-(BEDT-TTF)2KHg(SCN)4 under pressure shows features which are likelyassociated with theoretically predicted field-induced charge-density-wave(FICD<missing VAR>W) transitions.
Featurization terminated normally.
0,0,0,0,0,0.2857142857142857,0.2857142857142857,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0.07142857142857142,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07142857142857142,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FIC
###Interplay between the orbital quantization and Pauli effect in a charge-density-wave organic conductor|M. Kartsovnik,D. Andres,P. Grigoriev,W. Biberacher,H. Mueller###
(382688, 382690)
 The interlayer magnetoresistance of the low-dimensional organic metalalpha-(BEDT-TTF)2KHg(SCN)4 under pressure shows features which are likelyassociated with theoretically predicted field-induced charge-density-wave(FICD<missing VAR>W) transitions.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Interplay between the orbital quantization and Pauli effect in a charge-density-wave organic conductor|M. Kartsovnik,D. Andres,P. Grigoriev,W. Biberacher,H. Mueller###
(382692, 382692)
 The interlayer magnetoresistance of the low-dimensional organic metalalpha-(BEDT-TTF)2KHg(SCN)4 under pressure shows features which are likelyassociated with theoretically predicted field-induced charge-density-wave(FICD<missing VAR>W) transitions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Interplay between the orbital quantization and Pauli effect in a charge-density-wave organic conductor|M. Kartsovnik,D. Andres,P. Grigoriev,W. Biberacher,H. Mueller###
(382698, 382698)
 At ambient pressure, a magnetic field strongly tiltedtowards the conducting layers induces a series of hysteretic anomalies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FIC
###Interplay between the orbital quantization and Pauli effect in a charge-density-wave organic conductor|M. Kartsovnik,D. Andres,P. Grigoriev,W. Biberacher,H. Mueller###
(382756, 382758)
 Weattribute these anomalies to a novel kind of FICD<missing VAR>W originating from asuperposition of the orbital quantization of the nesting vector and Paulieffect on the charge-density wave.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Interplay between the orbital quantization and Pauli effect in a charge-density-wave organic conductor|M. Kartsovnik,D. Andres,P. Grigoriev,W. Biberacher,H. Mueller###
(382760, 382760)
 Weattribute these anomalies to a novel kind of FICD<missing VAR>W originating from asuperposition of the orbital quantization of the nesting vector and Paulieffect on the charge-density wave.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Controlled normal and inverse magnetoresistance and current-driven magnetization switching in magnetic nanopillars|M. AlHajDarwish,H. Kurt,S. Urazhdin,A. Fert,R. Loloee,W. P. Pratt Jr.,J. Bass###
(382941, 382941)
 We show all fourcombinations of normal and inverse behaviors, at both room temperature and4.2K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Controlled normal and inverse magnetoresistance and current-driven magnetization switching in magnetic nanopillars|M. AlHajDarwish,H. Kurt,S. Urazhdin,A. Fert,R. Loloee,W. P. Pratt Jr.,J. Bass###
(382944, 382944)
 In all cases studied, the direction of switching is set by the netscattering anisotropy of the fixed (polarizing) ferromagnet.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaMnO3
###Sodium Doped LaMnO3 Thin Films: Influence of Substrate and Thickness on Physical Properties|Lorenzo Malavasi,Maria Cristina Mozzati,Ivano Alessandri,Laura Depero,Carlo B. Azzoni,Giorgio Flor###
(383019, 383022)
Sodium Doped LaMnO3 Thin Films Influence of Substrate and Thickness on Physical Properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 11, 'to', 1],[110.0, 82, 'nm', 1],[184.0, 70, '%', 3]

In
###Sodium Doped LaMnO3 Thin Films: Influence of Substrate and Thickness on Physical Properties|Lorenzo Malavasi,Maria Cristina Mozzati,Ivano Alessandri,Laura Depero,Carlo B. Azzoni,Giorgio Flor###
(383045, 383045)
 In this paper we report the results about the synthesis and characterizationof optimally doped La1-xNaxMnO3 thin films grown onto SrTiO3 (100), NdGaO3(100) and NdGaO3 (110) for thickness ranging from 11 to 82 nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 11, 'to', 0],[87.0, 82, 'nm', 0],[161.0, 70, '%', 2]

La1-x
###Sodium Doped LaMnO3 Thin Films: Influence of Substrate and Thickness on Physical Properties|Lorenzo Malavasi,Maria Cristina Mozzati,Ivano Alessandri,Laura Depero,Carlo B. Azzoni,Giorgio Flor###
(383076, 383079)
 In this paper we report the results about the synthesis and characterizationof optimally doped La1-xNaxMnO3 thin films grown onto SrTiO3 (100), NdGaO3(100) and NdGaO3 (110) for thickness ranging from 11 to 82 nm.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[52.0, 11, 'to', 0],[53.0, 82, 'nm', 0],[127.0, 70, '%', 2]

MnO3
###Sodium Doped LaMnO3 Thin Films: Influence of Substrate and Thickness on Physical Properties|Lorenzo Malavasi,Maria Cristina Mozzati,Ivano Alessandri,Laura Depero,Carlo B. Azzoni,Giorgio Flor###
(383081, 383083)
 In this paper we report the results about the synthesis and characterizationof optimally doped La1-xNaxMnO3 thin films grown onto SrTiO3 (100), NdGaO3(100) and NdGaO3 (110) for thickness ranging from 11 to 82 nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 11, 'to', 0],[49.0, 82, 'nm', 0],[123.0, 70, '%', 2]

SrTiO3
###Sodium Doped LaMnO3 Thin Films: Influence of Substrate and Thickness on Physical Properties|Lorenzo Malavasi,Maria Cristina Mozzati,Ivano Alessandri,Laura Depero,Carlo B. Azzoni,Giorgio Flor###
(383093, 383096)
 In this paper we report the results about the synthesis and characterizationof optimally doped La1-xNaxMnO3 thin films grown onto SrTiO3 (100), NdGaO3(100) and NdGaO3 (110) for thickness ranging from 11 to 82 nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 11, 'to', 0],[36.0, 82, 'nm', 0],[110.0, 70, '%', 2]

NdGaO3
###Sodium Doped LaMnO3 Thin Films: Influence of Substrate and Thickness on Physical Properties|Lorenzo Malavasi,Maria Cristina Mozzati,Ivano Alessandri,Laura Depero,Carlo B. Azzoni,Giorgio Flor###
(383103, 383106)
 In this paper we report the results about the synthesis and characterizationof optimally doped La1-xNaxMnO3 thin films grown onto SrTiO3 (100), NdGaO3(100) and NdGaO3 (110) for thickness ranging from 11 to 82 nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 11, 'to', 0],[26.0, 82, 'nm', 0],[100.0, 70, '%', 2]

NdGaO3
###Sodium Doped LaMnO3 Thin Films: Influence of Substrate and Thickness on Physical Properties|Lorenzo Malavasi,Maria Cristina Mozzati,Ivano Alessandri,Laura Depero,Carlo B. Azzoni,Giorgio Flor###
(383115, 383118)
 In this paper we report the results about the synthesis and characterizationof optimally doped La1-xNaxMnO3 thin films grown onto SrTiO3 (100), NdGaO3(100) and NdGaO3 (110) for thickness ranging from 11 to 82 nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 11, 'to', 0],[14.0, 82, 'nm', 0],[88.0, 70, '%', 2]

In
###Direct Observation of High-Temperature Polaronic Behavior In Colossal Magnetoresistive Manganites|N. Mannella,A. Rosenhahn,C. H. Booth,S. Marchesini,B. S. Mun,S. -H. Yang,K. Ibrahim,Y. Tomioka,C. S. Fadley###
(383242, 383242)
Direct Observation of High-Temperature Polaronic Behavior In Colossal Magnetoresistive Manganites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 0.3, ',', 1]

La1-xSr
###Direct Observation of High-Temperature Polaronic Behavior In Colossal Magnetoresistive Manganites|N. Mannella,A. Rosenhahn,C. H. Booth,S. Marchesini,B. S. Mun,S. -H. Yang,K. Ibrahim,Y. Tomioka,C. S. Fadley###
(383280, 383284)
 The temperature dependence of the electronic and atomic structure of thecolossal magnetoresistive oxides La1-xSrx<missing VAR>MnO3 (x<missing VAR>  0.3, 0.4) hasbeen studied using core and valence level photoemission, x<missing VAR>-ray absorption andemission, and extended x<missing VAR>-ray absorption fine structure spectroscopy.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[10.0, 0.3, ',', 0]

MnO3
###Direct Observation of High-Temperature Polaronic Behavior In Colossal Magnetoresistive Manganites|N. Mannella,A. Rosenhahn,C. H. Booth,S. Marchesini,B. S. Mun,S. -H. Yang,K. Ibrahim,Y. Tomioka,C. S. Fadley###
(383286, 383288)
 The temperature dependence of the electronic and atomic structure of thecolossal magnetoresistive oxides La1-xSrx<missing VAR>MnO3 (x<missing VAR>  0.3, 0.4) hasbeen studied using core and valence level photoemission, x<missing VAR>-ray absorption andemission, and extended x<missing VAR>-ray absorption fine structure spectroscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 0.3, ',', 0]

Mn
###Direct Observation of High-Temperature Polaronic Behavior In Colossal Magnetoresistive Manganites|N. Mannella,A. Rosenhahn,C. H. Booth,S. Marchesini,B. S. Mun,S. -H. Yang,K. Ibrahim,Y. Tomioka,C. S. Fadley###
(383401, 383401)
 A dramaticand reversible change of the electronic structure is observed on crossing theCurie temperature, including charge localization and spin moment increase ofMn, together with Jahn-Teller distortions, both signatures of polaronformation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 0.3, ',', 1]

H
###Oscillations of magnetoresistance of 2DEG in a weak magnetic field under microwave irradiation|A. E. Patrakov,I. I. Lyapilin###
(383533, 383533)
 Under microwave irradiation, in 2D electron systems with high filling factorsoscillations of longitudinal magnetoresistance appear in the range of magneticfields where ordinary SdH oscillations are suppressed.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 2, 'DEG', 1],[43.0, 2, 'D', 0],[38.0, 0.02, 'T', 1]

B
###Oscillations of magnetoresistance of 2DEG in a weak magnetic field under microwave irradiation|A. E. Patrakov,I. I. Lyapilin###
(383568, 383568)
 An unusual beat-likebehaviour of these oscillations in weak magnetic fields (B < 0.02 T) wasattributed to the zero spin splitting previously.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 2, 'DEG', 2],[78.0, 2, 'D', 1],[3.0, 0.02, 'T', 0]

Fe3O4
###Atomically Resolved Spin-Dependent Tunnelling on the Oxygen-Terminated Fe3O4 (111)|N. Berdunov,S. Murphy,G. Mariotto,I. V. Shvets###
(383674, 383677)
Atomically Resolved Spin-Dependent Tunnelling on the Oxygen-Terminated Fe3O4 (111).
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 250, '%', 3]

(SP)
###Atomically Resolved Spin-Dependent Tunnelling on the Oxygen-Terminated Fe3O4 (111)|N. Berdunov,S. Murphy,G. Mariotto,I. V. Shvets###
(383692, 383695)
 We employ spin-polarized (SP) STM to study the spin-dependent tunnelingbetween a magnetite (111) sample and an antiferromagnetic tip through a vacuumbarrier at room temperature.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 250, '%', 2]

S
###Atomically Resolved Spin-Dependent Tunnelling on the Oxygen-Terminated Fe3O4 (111)|N. Berdunov,S. Murphy,G. Mariotto,I. V. Shvets###
(383697, 383697)
 We employ spin-polarized (SP) STM to study the spin-dependent tunnelingbetween a magnetite (111) sample and an antiferromagnetic tip through a vacuumbarrier at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 250, '%', 2]

S
###Atomically Resolved Spin-Dependent Tunnelling on the Oxygen-Terminated Fe3O4 (111)|N. Berdunov,S. Murphy,G. Mariotto,I. V. Shvets###
(383754, 383754)
 Atomic scale STM images show significant magneticcontrast corresponding to variations in the local surface states induced byoxygen vacancies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 250, '%', 1]

Ga
###Current-driven Magnetization Reversal in a Ferromagnetic Semiconductor (Ga,Mn)As/GaAs/(Ga,Mn)As Tunnel Junction|D. Chiba,Y. Sato,T. Kita,F. Matsukura,H. Ohno###
(383878, 383878)
Current-driven Magnetization Reversal in a Ferromagnetic Semiconductor (Ga,Mn)As/GaAs/(Ga,Mn)As Tunnel Junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 30, 'K', 1],[92.0, 1.5, 'x', 2],[93.0, 0.3, 'um', 2],[124.0, 2.2, 'x', 2]

Mn
###Current-driven Magnetization Reversal in a Ferromagnetic Semiconductor (Ga,Mn)As/GaAs/(Ga,Mn)As Tunnel Junction|D. Chiba,Y. Sato,T. Kita,F. Matsukura,H. Ohno###
(383880, 383880)
Current-driven Magnetization Reversal in a Ferromagnetic Semiconductor (Ga,Mn)As/GaAs/(Ga,Mn)As Tunnel Junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 30, 'K', 1],[90.0, 1.5, 'x', 2],[91.0, 0.3, 'um', 2],[122.0, 2.2, 'x', 2]

As/GaAs
###Current-driven Magnetization Reversal in a Ferromagnetic Semiconductor (Ga,Mn)As/GaAs/(Ga,Mn)As Tunnel Junction|D. Chiba,Y. Sato,T. Kita,F. Matsukura,H. Ohno###
(383882, 383885)
Current-driven Magnetization Reversal in a Ferromagnetic Semiconductor (Ga,Mn)As/GaAs/(Ga,Mn)As Tunnel Junction.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[61.0, 30, 'K', 1],[85.0, 1.5, 'x', 2],[86.0, 0.3, 'um', 2],[117.0, 2.2, 'x', 2]

Ga
###Current-driven Magnetization Reversal in a Ferromagnetic Semiconductor (Ga,Mn)As/GaAs/(Ga,Mn)As Tunnel Junction|D. Chiba,Y. Sato,T. Kita,F. Matsukura,H. Ohno###
(383888, 383888)
Current-driven Magnetization Reversal in a Ferromagnetic Semiconductor (Ga,Mn)As/GaAs/(Ga,Mn)As Tunnel Junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 30, 'K', 1],[82.0, 1.5, 'x', 2],[83.0, 0.3, 'um', 2],[114.0, 2.2, 'x', 2]

Mn
###Current-driven Magnetization Reversal in a Ferromagnetic Semiconductor (Ga,Mn)As/GaAs/(Ga,Mn)As Tunnel Junction|D. Chiba,Y. Sato,T. Kita,F. Matsukura,H. Ohno###
(383890, 383890)
Current-driven Magnetization Reversal in a Ferromagnetic Semiconductor (Ga,Mn)As/GaAs/(Ga,Mn)As Tunnel Junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 30, 'K', 1],[80.0, 1.5, 'x', 2],[81.0, 0.3, 'um', 2],[112.0, 2.2, 'x', 2]

As
###Current-driven Magnetization Reversal in a Ferromagnetic Semiconductor (Ga,Mn)As/GaAs/(Ga,Mn)As Tunnel Junction|D. Chiba,Y. Sato,T. Kita,F. Matsukura,H. Ohno###
(383892, 383892)
Current-driven Magnetization Reversal in a Ferromagnetic Semiconductor (Ga,Mn)As/GaAs/(Ga,Mn)As Tunnel Junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 30, 'K', 1],[78.0, 1.5, 'x', 2],[79.0, 0.3, 'um', 2],[110.0, 2.2, 'x', 2]

Ga
###Current-driven Magnetization Reversal in a Ferromagnetic Semiconductor (Ga,Mn)As/GaAs/(Ga,Mn)As Tunnel Junction|D. Chiba,Y. Sato,T. Kita,F. Matsukura,H. Ohno###
(383919, 383919)
 Current-driven magnetization reversal in a ferromagnetic semiconductor based(Ga,Mn)As/GaAs/(Ga,Mn)As magnetic tunnel junction is demonstrated at 30 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 30, 'K', 0],[51.0, 1.5, 'x', 1],[52.0, 0.3, 'um', 1],[83.0, 2.2, 'x', 1]

Mn
###Current-driven Magnetization Reversal in a Ferromagnetic Semiconductor (Ga,Mn)As/GaAs/(Ga,Mn)As Tunnel Junction|D. Chiba,Y. Sato,T. Kita,F. Matsukura,H. Ohno###
(383921, 383921)
 Current-driven magnetization reversal in a ferromagnetic semiconductor based(Ga,Mn)As/GaAs/(Ga,Mn)As magnetic tunnel junction is demonstrated at 30 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 30, 'K', 0],[49.0, 1.5, 'x', 1],[50.0, 0.3, 'um', 1],[81.0, 2.2, 'x', 1]

As/GaAs
###Current-driven Magnetization Reversal in a Ferromagnetic Semiconductor (Ga,Mn)As/GaAs/(Ga,Mn)As Tunnel Junction|D. Chiba,Y. Sato,T. Kita,F. Matsukura,H. Ohno###
(383923, 383926)
 Current-driven magnetization reversal in a ferromagnetic semiconductor based(Ga,Mn)As/GaAs/(Ga,Mn)As magnetic tunnel junction is demonstrated at 30 K.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[20.0, 30, 'K', 0],[44.0, 1.5, 'x', 1],[45.0, 0.3, 'um', 1],[76.0, 2.2, 'x', 1]

Ga
###Current-driven Magnetization Reversal in a Ferromagnetic Semiconductor (Ga,Mn)As/GaAs/(Ga,Mn)As Tunnel Junction|D. Chiba,Y. Sato,T. Kita,F. Matsukura,H. Ohno###
(383929, 383929)
 Current-driven magnetization reversal in a ferromagnetic semiconductor based(Ga,Mn)As/GaAs/(Ga,Mn)As magnetic tunnel junction is demonstrated at 30 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 30, 'K', 0],[41.0, 1.5, 'x', 1],[42.0, 0.3, 'um', 1],[73.0, 2.2, 'x', 1]

Mn
###Current-driven Magnetization Reversal in a Ferromagnetic Semiconductor (Ga,Mn)As/GaAs/(Ga,Mn)As Tunnel Junction|D. Chiba,Y. Sato,T. Kita,F. Matsukura,H. Ohno###
(383931, 383931)
 Current-driven magnetization reversal in a ferromagnetic semiconductor based(Ga,Mn)As/GaAs/(Ga,Mn)As magnetic tunnel junction is demonstrated at 30 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 30, 'K', 0],[39.0, 1.5, 'x', 1],[40.0, 0.3, 'um', 1],[71.0, 2.2, 'x', 1]

As
###Current-driven Magnetization Reversal in a Ferromagnetic Semiconductor (Ga,Mn)As/GaAs/(Ga,Mn)As Tunnel Junction|D. Chiba,Y. Sato,T. Kita,F. Matsukura,H. Ohno###
(383933, 383933)
 Current-driven magnetization reversal in a ferromagnetic semiconductor based(Ga,Mn)As/GaAs/(Ga,Mn)As magnetic tunnel junction is demonstrated at 30 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 30, 'K', 0],[37.0, 1.5, 'x', 1],[38.0, 0.3, 'um', 1],[69.0, 2.2, 'x', 1]

In
###Spin-Transfer Effects in Nanoscale Magnetic Tunnel Junctions|G. D. Fuchs,N. C. Emley,I. N. Krivorotov,P. M. Braganca,E. M. Ryan,S. I. Kiselev,J. C. Sankey,J. A. Katine,D. C. Ralph,R. A. Buhrman###
(384182, 384182)
 In the tunnel junctions, spin-transfer-drivenswitching can occur at voltages that are high enough to quench the tunnelmagnetoresistance, demonstrating that the current remains spin-polarized atthese voltages.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 5, 'Ohm', 2]

H
###Oscillations of 2DEG thermoelectric coefficients in magnetic field under microwave irradiation|A. E. Patrakov,I. I. Lyapilin###
(384339, 384339)
 It is known that under microwave irradiation, in 2D electron systems withhigh filling factors oscillations of longitudinal magnetoresistance appear inthe range of magnetic fields where ordinary SdH oscillations are suppressed.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 2, 'DEG', 1],[43.0, 2, 'D', 0]

In
###Oscillations of 2DEG thermoelectric coefficients in magnetic field under microwave irradiation|A. E. Patrakov,I. I. Lyapilin###
(384348, 384348)
 Inthe present paper we propose a simple quasiclassical model of these newoscillations based on the Boltzmann kinetic equation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 2, 'DEG', 2],[52.0, 2, 'D', 1]

W
###Propagation of a magnetic domain wall in magnetic wires with asymmetric notches|A. Himeno,T. Okuno,S. Kasai,T. Ono,S. Nasu,K. Mibu,T. Shinjo###
(384482, 384482)
 The propagation of a magnetic domain wall (D<missing VAR>W) in a submicron magnetic wireconsisting of a magnetic/nonmagnetic/magnetic trilayered structure withasymmetric notches was investigated by utilizing the giant magnetoresistanceeffect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Propagation of a magnetic domain wall in magnetic wires with asymmetric notches|A. Himeno,T. Okuno,S. Kasai,T. Ono,S. Nasu,K. Mibu,T. Shinjo###
(384548, 384548)
 The propagation direction of a D<missing VAR>W was controlled by a pulsed localmagnetic field, which nucleates the D<missing VAR>W at one of the two ends of the wire.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Propagation of a magnetic domain wall in magnetic wires with asymmetric notches|A. Himeno,T. Okuno,S. Kasai,T. Ono,S. Nasu,K. Mibu,T. Shinjo###
(384575, 384575)
 The propagation direction of a D<missing VAR>W was controlled by a pulsed localmagnetic field, which nucleates the D<missing VAR>W at one of the two ends of the wire.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Propagation of a magnetic domain wall in magnetic wires with asymmetric notches|A. Himeno,T. Okuno,S. Kasai,T. Ono,S. Nasu,K. Mibu,T. Shinjo###
(384616, 384616)
 Itwas found that the depinning field of the D<missing VAR>W from the notch depends on thepropagation direction of the D<missing VAR>W.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Propagation of a magnetic domain wall in magnetic wires with asymmetric notches|A. Himeno,T. Okuno,S. Kasai,T. Ono,S. Nasu,K. Mibu,T. Shinjo###
(384640, 384640)
 Itwas found that the depinning field of the D<missing VAR>W from the notch depends on thepropagation direction of the D<missing VAR>W.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co2Cr0.6Fe0.4Al
###Magnetic tunneling junctions with the Heusler compound Co_2Cr_{0.6}Fe_{0.4}Al|A. Conca,S. Falk,G. Jakob,M. Jourdan,H. Adrian###
(384665, 384671)
Magnetic tunneling junctions with the Heusler compound Co2Cr0.6Fe0.4Al.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.15,0,0.1,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 4, 'K', 3],[103.0, 300, 'K', 3]

AlO
###Magnetic tunneling junctions with the Heusler compound Co_2Cr_{0.6}Fe_{0.4}Al|A. Conca,S. Falk,G. Jakob,M. Jourdan,H. Adrian###
(384727, 384728)
The junctions are deposited by magnetron dc sputtering using shadow masktechniques with AlOx<missing VAR> as a barrier and cobalt as counter electrode.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 4, 'K', 1],[46.0, 300, 'K', 1]

VS
###Magnetic tunneling junctions with the Heusler compound Co_2Cr_{0.6}Fe_{0.4}Al|A. Conca,S. Falk,G. Jakob,M. Jourdan,H. Adrian###
(384820, 384821)
 VSM<missing VAR> measurements were carried out to examine the magnetic propertiesof the samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 4, 'K', 2],[46.0, 300, 'K', 2]

F
###Field-induced spin density wave in (TMTSF)$_2$NO$_3$|David Vignolles,Alain Audouard,Marc Nardone,Luc Brossard,Sabrina Bouguessa,Jean-Marc Fabre###
(384875, 384875)
Field-induced spin density wave in (TMTSF)2NO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 50, 'teslas', 1],[121.0, 8.5, 'kbar', 3],[126.0, 20, 'T', 3]

NO3
###Field-induced spin density wave in (TMTSF)$_2$NO$_3$|David Vignolles,Alain Audouard,Marc Nardone,Luc Brossard,Sabrina Bouguessa,Jean-Marc Fabre###
(384878, 384880)
Field-induced spin density wave in (TMTSF)2NO3.
Featurization terminated normally.
0,0,0,0,0,0,0.25,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 50, 'teslas', 1],[116.0, 8.5, 'kbar', 3],[121.0, 20, 'T', 3]

F
###Field-induced spin density wave in (TMTSF)$_2$NO$_3$|David Vignolles,Alain Audouard,Marc Nardone,Luc Brossard,Sabrina Bouguessa,Jean-Marc Fabre###
(384900, 384900)
 Interlayer magnetoresistance of the Bechgaard salt (TMTSF)2NO3 isinvestigated up to 50 teslas under pressures of a few kilobars.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 50, 'teslas', 0],[96.0, 8.5, 'kbar', 2],[101.0, 20, 'T', 2]

NO3
###Field-induced spin density wave in (TMTSF)$_2$NO$_3$|David Vignolles,Alain Audouard,Marc Nardone,Luc Brossard,Sabrina Bouguessa,Jean-Marc Fabre###
(384903, 384905)
 Interlayer magnetoresistance of the Bechgaard salt (TMTSF)2NO3 isinvestigated up to 50 teslas under pressures of a few kilobars.
Featurization terminated normally.
0,0,0,0,0,0,0.25,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 50, 'teslas', 0],[91.0, 8.5, 'kbar', 2],[96.0, 20, 'T', 2]

CeCoIn5
###Unconventional density wave in CeCoIn_5?|Balázs Dóra,Kazumi Maki,Attila Virosztek,András Ványolos###
(385067, 385070)
Unconventional density wave in CeCoIn5?
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7142857142857143,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 2.3, 'K', 1]

CeCoIn5
###Unconventional density wave in CeCoIn_5?|Balázs Dóra,Kazumi Maki,Attila Virosztek,András Ványolos###
(385117, 385120)
 Very recently large Nernst effect and Seebeck effect were observed above thesuperconducting transition temperature 2.3K in a heavy fermion superconductorCeCoIn5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7142857142857143,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 2.3, 'K', 0]

U
###Unconventional density wave in CeCoIn_5?|Balázs Dóra,Kazumi Maki,Attila Virosztek,András Ványolos###
(385151, 385151)
 We shall interpret this large Nernst effect in terms ofunconventional density wave (UD<missing VAR>W), which appears around T<missing VAR>18K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 2.3, 'K', 1]

W
###Unconventional density wave in CeCoIn_5?|Balázs Dóra,Kazumi Maki,Attila Virosztek,András Ványolos###
(385153, 385153)
 We shall interpret this large Nernst effect in terms ofunconventional density wave (UD<missing VAR>W), which appears around T<missing VAR>18K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 2.3, 'K', 1]

K
###Unconventional density wave in CeCoIn_5?|Balázs Dóra,Kazumi Maki,Attila Virosztek,András Ványolos###
(385165, 385165)
 We shall interpret this large Nernst effect in terms ofunconventional density wave (UD<missing VAR>W), which appears around T<missing VAR>18K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 2.3, 'K', 1]

K
###Unconventional density wave in CeCoIn_5?|Balázs Dóra,Kazumi Maki,Attila Virosztek,András Ványolos###
(385189, 385189)
 Also thetemperature dependence of the Seebeck coefficient below T<missing VAR>18K is described interms of UD<missing VAR>W.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 2.3, 'K', 2]

U
###Unconventional density wave in CeCoIn_5?|Balázs Dóra,Kazumi Maki,Attila Virosztek,András Ványolos###
(385202, 385202)
 Also thetemperature dependence of the Seebeck coefficient below T<missing VAR>18K is described interms of UD<missing VAR>W.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 2.3, 'K', 2]

W
###Unconventional density wave in CeCoIn_5?|Balázs Dóra,Kazumi Maki,Attila Virosztek,András Ványolos###
(385204, 385204)
 Also thetemperature dependence of the Seebeck coefficient below T<missing VAR>18K is described interms of UD<missing VAR>W.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 2.3, 'K', 2]

U
###Unconventional density wave in CeCoIn_5?|Balázs Dóra,Kazumi Maki,Attila Virosztek,András Ványolos###
(385213, 385213)
 Another hallmark for UD<missing VAR>W is the angular dependentmagnetoresistance, which should be readily accessible experimentally.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 2.3, 'K', 3]

W
###Unconventional density wave in CeCoIn_5?|Balázs Dóra,Kazumi Maki,Attila Virosztek,András Ványolos###
(385215, 385215)
 Another hallmark for UD<missing VAR>W is the angular dependentmagnetoresistance, which should be readily accessible experimentally.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 2.3, 'K', 3]

As
###Large Magnetoresistance Induced by Quantum Charge Fluctuations in Magnetic Double Dots|L. Sheng,D. Y. Xing,D. N. Sheng###
(385400, 385400)
 As a result, a very large tunnelingmagnetoresistance occurs near the Coulomb peaks, and its sign may be eitherpositive or negative.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Current-Induced Magnetization Switching in Permalloy-based Nanopillars with Cu, Ag, and Au|H. Kurt,R. Loloee,W. P. Pratt Jr.,J. Bass###
(385475, 385475)
Current-Induced Magnetization Switching in Permalloy-based Nanopillars with Cu, Ag, and Au.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 4.2, 'K', 1],[115.0, 10, 'nm', 2]

Ag
###Current-Induced Magnetization Switching in Permalloy-based Nanopillars with Cu, Ag, and Au|H. Kurt,R. Loloee,W. P. Pratt Jr.,J. Bass###
(385478, 385478)
Current-Induced Magnetization Switching in Permalloy-based Nanopillars with Cu, Ag, and Au.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 4.2, 'K', 1],[112.0, 10, 'nm', 2]

Au
###Current-Induced Magnetization Switching in Permalloy-based Nanopillars with Cu, Ag, and Au|H. Kurt,R. Loloee,W. P. Pratt Jr.,J. Bass###
(385483, 385483)
Current-Induced Magnetization Switching in Permalloy-based Nanopillars with Cu, Ag, and Au.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 4.2, 'K', 1],[107.0, 10, 'nm', 2]

I
###Current-Induced Magnetization Switching in Permalloy-based Nanopillars with Cu, Ag, and Au|H. Kurt,R. Loloee,W. P. Pratt Jr.,J. Bass###
(385504, 385504)
 We compare magnetoresistances (MR) and switching currents (Is) at roomtemperature (295K) and 4.2K for Permalloy/N/Permalloy nanopillars undergoingcurrent-induced magnetization switching (CIM<missing VAR>S), with non-magnetic metals N Cu, Ag, and Au.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 4.2, 'K', 0],[86.0, 10, 'nm', 1]

K
###Current-Induced Magnetization Switching in Permalloy-based Nanopillars with Cu, Ag, and Au|H. Kurt,R. Loloee,W. P. Pratt Jr.,J. Bass###
(385517, 385517)
 We compare magnetoresistances (MR) and switching currents (Is) at roomtemperature (295K) and 4.2K for Permalloy/N/Permalloy nanopillars undergoingcurrent-induced magnetization switching (CIM<missing VAR>S), with non-magnetic metals N Cu, Ag, and Au.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 4.2, 'K', 0],[73.0, 10, 'nm', 1]

N
###Current-Induced Magnetization Switching in Permalloy-based Nanopillars with Cu, Ag, and Au|H. Kurt,R. Loloee,W. P. Pratt Jr.,J. Bass###
(385527, 385527)
 We compare magnetoresistances (MR) and switching currents (Is) at roomtemperature (295K) and 4.2K for Permalloy/N/Permalloy nanopillars undergoingcurrent-induced magnetization switching (CIM<missing VAR>S), with non-magnetic metals N Cu, Ag, and Au.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 4.2, 'K', 0],[63.0, 10, 'nm', 1]

CI
###Current-Induced Magnetization Switching in Permalloy-based Nanopillars with Cu, Ag, and Au|H. Kurt,R. Loloee,W. P. Pratt Jr.,J. Bass###
(385545, 385546)
 We compare magnetoresistances (MR) and switching currents (Is) at roomtemperature (295K) and 4.2K for Permalloy/N/Permalloy nanopillars undergoingcurrent-induced magnetization switching (CIM<missing VAR>S), with non-magnetic metals N Cu, Ag, and Au.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 4.2, 'K', 0],[44.0, 10, 'nm', 1]

S
###Current-Induced Magnetization Switching in Permalloy-based Nanopillars with Cu, Ag, and Au|H. Kurt,R. Loloee,W. P. Pratt Jr.,J. Bass###
(385548, 385548)
 We compare magnetoresistances (MR) and switching currents (Is) at roomtemperature (295K) and 4.2K for Permalloy/N/Permalloy nanopillars undergoingcurrent-induced magnetization switching (CIM<missing VAR>S), with non-magnetic metals N Cu, Ag, and Au.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 4.2, 'K', 0],[42.0, 10, 'nm', 1]

N
###Current-Induced Magnetization Switching in Permalloy-based Nanopillars with Cu, Ag, and Au|H. Kurt,R. Loloee,W. P. Pratt Jr.,J. Bass###
(385560, 385560)
 We compare magnetoresistances (MR) and switching currents (Is) at roomtemperature (295K) and 4.2K for Permalloy/N/Permalloy nanopillars undergoingcurrent-induced magnetization switching (CIM<missing VAR>S), with non-magnetic metals N Cu, Ag, and Au.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 4.2, 'K', 0],[30.0, 10, 'nm', 1]

Cu
###Current-Induced Magnetization Switching in Permalloy-based Nanopillars with Cu, Ag, and Au|H. Kurt,R. Loloee,W. P. Pratt Jr.,J. Bass###
(385564, 385564)
 We compare magnetoresistances (MR) and switching currents (Is) at roomtemperature (295K) and 4.2K for Permalloy/N/Permalloy nanopillars undergoingcurrent-induced magnetization switching (CIM<missing VAR>S), with non-magnetic metals N Cu, Ag, and Au.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 4.2, 'K', 0],[26.0, 10, 'nm', 1]

Ag
###Current-Induced Magnetization Switching in Permalloy-based Nanopillars with Cu, Ag, and Au|H. Kurt,R. Loloee,W. P. Pratt Jr.,J. Bass###
(385567, 385567)
 We compare magnetoresistances (MR) and switching currents (Is) at roomtemperature (295K) and 4.2K for Permalloy/N/Permalloy nanopillars undergoingcurrent-induced magnetization switching (CIM<missing VAR>S), with non-magnetic metals N Cu, Ag, and Au.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 4.2, 'K', 0],[23.0, 10, 'nm', 1]

Au
###Current-Induced Magnetization Switching in Permalloy-based Nanopillars with Cu, Ag, and Au|H. Kurt,R. Loloee,W. P. Pratt Jr.,J. Bass###
(385572, 385572)
 We compare magnetoresistances (MR) and switching currents (Is) at roomtemperature (295K) and 4.2K for Permalloy/N/Permalloy nanopillars undergoingcurrent-induced magnetization switching (CIM<missing VAR>S), with non-magnetic metals N Cu, Ag, and Au.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 4.2, 'K', 0],[18.0, 10, 'nm', 1]

N
###Current-Induced Magnetization Switching in Permalloy-based Nanopillars with Cu, Ag, and Au|H. Kurt,R. Loloee,W. P. Pratt Jr.,J. Bass###
(385577, 385577)
 The N-metal thickness is held fixed at 10 nm.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 4.2, 'K', 1],[13.0, 10, 'nm', 0]

I
###Current-Induced Magnetization Switching in Permalloy-based Nanopillars with Cu, Ag, and Au|H. Kurt,R. Loloee,W. P. Pratt Jr.,J. Bass###
(385607, 385607)
 Any systematicdifferences in MR and Is<missing VAR> for the different N-metals are modest, suggestingthat Ag and Au represent potentially viable alternatives for CIM<missing VAR>S studies anddevices to the more widely used Cu.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 4.2, 'K', 2],[17.0, 10, 'nm', 1]

N
###Current-Induced Magnetization Switching in Permalloy-based Nanopillars with Cu, Ag, and Au|H. Kurt,R. Loloee,W. P. Pratt Jr.,J. Bass###
(385616, 385616)
 Any systematicdifferences in MR and Is<missing VAR> for the different N-metals are modest, suggestingthat Ag and Au represent potentially viable alternatives for CIM<missing VAR>S studies anddevices to the more widely used Cu.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 4.2, 'K', 2],[26.0, 10, 'nm', 1]

Ag
###Current-Induced Magnetization Switching in Permalloy-based Nanopillars with Cu, Ag, and Au|H. Kurt,R. Loloee,W. P. Pratt Jr.,J. Bass###
(385630, 385630)
 Any systematicdifferences in MR and Is<missing VAR> for the different N-metals are modest, suggestingthat Ag and Au represent potentially viable alternatives for CIM<missing VAR>S studies anddevices to the more widely used Cu.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 4.2, 'K', 2],[40.0, 10, 'nm', 1]

Au
###Current-Induced Magnetization Switching in Permalloy-based Nanopillars with Cu, Ag, and Au|H. Kurt,R. Loloee,W. P. Pratt Jr.,J. Bass###
(385634, 385634)
 Any systematicdifferences in MR and Is<missing VAR> for the different N-metals are modest, suggestingthat Ag and Au represent potentially viable alternatives for CIM<missing VAR>S studies anddevices to the more widely used Cu.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 4.2, 'K', 2],[44.0, 10, 'nm', 1]

CI
###Current-Induced Magnetization Switching in Permalloy-based Nanopillars with Cu, Ag, and Au|H. Kurt,R. Loloee,W. P. Pratt Jr.,J. Bass###
(385646, 385647)
 Any systematicdifferences in MR and Is<missing VAR> for the different N-metals are modest, suggestingthat Ag and Au represent potentially viable alternatives for CIM<missing VAR>S studies anddevices to the more widely used Cu.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 4.2, 'K', 2],[56.0, 10, 'nm', 1]

S
###Current-Induced Magnetization Switching in Permalloy-based Nanopillars with Cu, Ag, and Au|H. Kurt,R. Loloee,W. P. Pratt Jr.,J. Bass###
(385649, 385649)
 Any systematicdifferences in MR and Is<missing VAR> for the different N-metals are modest, suggestingthat Ag and Au represent potentially viable alternatives for CIM<missing VAR>S studies anddevices to the more widely used Cu.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 4.2, 'K', 2],[59.0, 10, 'nm', 1]

Cu
###Current-Induced Magnetization Switching in Permalloy-based Nanopillars with Cu, Ag, and Au|H. Kurt,R. Loloee,W. P. Pratt Jr.,J. Bass###
(385668, 385668)
 Any systematicdifferences in MR and Is<missing VAR> for the different N-metals are modest, suggestingthat Ag and Au represent potentially viable alternatives for CIM<missing VAR>S studies anddevices to the more widely used Cu.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 4.2, 'K', 2],[78.0, 10, 'nm', 1]

Ga
###Magnetotransport and Domain Wall in Nanoconstriction of Ferromagnetic Semiconductor (Ga,Mn)As|T. Figielski,T. Wosinski,O. Pelya,J. Sadowski,A. Morawski,A. Makosa,W. Dobrowolski,R. Szymczak,J. Wrobel###
(385861, 385861)
Magnetotransport and Domain Wall in Nanoconstriction of Ferromagnetic Semiconductor (Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Magnetotransport and Domain Wall in Nanoconstriction of Ferromagnetic Semiconductor (Ga,Mn)As|T. Figielski,T. Wosinski,O. Pelya,J. Sadowski,A. Morawski,A. Makosa,W. Dobrowolski,R. Szymczak,J. Wrobel###
(385863, 385863)
Magnetotransport and Domain Wall in Nanoconstriction of Ferromagnetic Semiconductor (Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Magnetotransport and Domain Wall in Nanoconstriction of Ferromagnetic Semiconductor (Ga,Mn)As|T. Figielski,T. Wosinski,O. Pelya,J. Sadowski,A. Morawski,A. Makosa,W. Dobrowolski,R. Szymczak,J. Wrobel###
(385865, 385865)
Magnetotransport and Domain Wall in Nanoconstriction of Ferromagnetic Semiconductor (Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###Magnetotransport and Domain Wall in Nanoconstriction of Ferromagnetic Semiconductor (Ga,Mn)As|T. Figielski,T. Wosinski,O. Pelya,J. Sadowski,A. Morawski,A. Makosa,W. Dobrowolski,R. Szymczak,J. Wrobel###
(385888, 385888)
 We studied magnetoresistance (MR) of nanoconstrictions created in (Ga,Mn)Asepilayers by O ion implantation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Magnetotransport and Domain Wall in Nanoconstriction of Ferromagnetic Semiconductor (Ga,Mn)As|T. Figielski,T. Wosinski,O. Pelya,J. Sadowski,A. Morawski,A. Makosa,W. Dobrowolski,R. Szymczak,J. Wrobel###
(385890, 385890)
 We studied magnetoresistance (MR) of nanoconstrictions created in (Ga,Mn)Asepilayers by O ion implantation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Magnetotransport and Domain Wall in Nanoconstriction of Ferromagnetic Semiconductor (Ga,Mn)As|T. Figielski,T. Wosinski,O. Pelya,J. Sadowski,A. Morawski,A. Makosa,W. Dobrowolski,R. Szymczak,J. Wrobel###
(385892, 385892)
 We studied magnetoresistance (MR) of nanoconstrictions created in (Ga,Mn)Asepilayers by O ion implantation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Magnetotransport and Domain Wall in Nanoconstriction of Ferromagnetic Semiconductor (Ga,Mn)As|T. Figielski,T. Wosinski,O. Pelya,J. Sadowski,A. Morawski,A. Makosa,W. Dobrowolski,R. Szymczak,J. Wrobel###
(385899, 385899)
 We studied magnetoresistance (MR) of nanoconstrictions created in (Ga,Mn)Asepilayers by O ion implantation.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Magnetotransport and Domain Wall in Nanoconstriction of Ferromagnetic Semiconductor (Ga,Mn)As|T. Figielski,T. Wosinski,O. Pelya,J. Sadowski,A. Morawski,A. Makosa,W. Dobrowolski,R. Szymczak,J. Wrobel###
(385935, 385935)
 Original layers exhibit a negative MR that isplausibly caused by weak localization (WL) effects at the lowest temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magnetotransport and Domain Wall in Nanoconstriction of Ferromagnetic Semiconductor (Ga,Mn)As|T. Figielski,T. Wosinski,O. Pelya,J. Sadowski,A. Morawski,A. Makosa,W. Dobrowolski,R. Szymczak,J. Wrobel###
(385951, 385951)
In constricted samples, additionally, jumps of an enhanced conductance appearon the background of the negative MR, whose positions reflect the hysteresis ofmagnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Magnetotransport and Domain Wall in Nanoconstriction of Ferromagnetic Semiconductor (Ga,Mn)As|T. Figielski,T. Wosinski,O. Pelya,J. Sadowski,A. Morawski,A. Makosa,W. Dobrowolski,R. Szymczak,J. Wrobel###
(386026, 386026)
 We argue that they are manifestation of a suppression of WL<missing VAR> dueto the nucleation of a domain wall in the constriction<missing PERIOD>
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Au
###First-principles generation of Stereographic Maps for high-field magnetoresistance in normal metals: an application to Au and Ag|Roberto De Leo###
(386092, 386092)
First-principles generation of Stereographic Maps for high-field magnetoresistance in normal metals an application to Au and Ag.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ag
###First-principles generation of Stereographic Maps for high-field magnetoresistance in normal metals: an application to Au and Ag|Roberto De Leo###
(386096, 386096)
First-principles generation of Stereographic Maps for high-field magnetoresistance in normal metals an application to Au and Ag.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###First-principles generation of Stereographic Maps for high-field magnetoresistance in normal metals: an application to Au and Ag|Roberto De Leo###
(386227, 386227)
We present here the method we developed to generate Stereographic Maps directlyfrom a metals<missing VAR> Fermi Surface, based on the Lifshitz model and the recentadvances by S.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###First-principles generation of Stereographic Maps for high-field magnetoresistance in normal metals: an application to Au and Ag|Roberto De Leo###
(386229, 386229)
P.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###First-principles generation of Stereographic Maps for high-field magnetoresistance in normal metals: an application to Au and Ag|Roberto De Leo###
(386241, 386241)
 As an application, we test the methodwith an interesting toy model and then with Au and Ag.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Au
###First-principles generation of Stereographic Maps for high-field magnetoresistance in normal metals: an application to Au and Ag|Roberto De Leo###
(386273, 386273)
 As an application, we test the methodwith an interesting toy model and then with Au and Ag.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ag
###First-principles generation of Stereographic Maps for high-field magnetoresistance in normal metals: an application to Au and Ag|Roberto De Leo###
(386277, 386277)
 As an application, we test the methodwith an interesting toy model and then with Au and Ag.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Searching for a magnetic proximity effect in magnetite-carbon structures|R. Höhne,M. Ziese,P. Esquinazi###
(386519, 386519)
 In order to study a possible magnetic proximity effect in magnetite-carbonstructures, we have performed magnetization measurements of graphite-magnetitecomposites with different mass ratios as well as the measurement of themagnetoresistance of one of them and of the magnetization of a magnetite-carbonbilayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Angular Magnetoresistance Oscillations in Organic Conductors|A. G. Lebed,Heon-Ick Ha,M. J. Naughton###
(386794, 386794)
 As an example, we showthat suggested theory is in qualitative and quantitative agreements with therecent experimental data obtained on (TMTSF)2ClO4 conductor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 1, 'D', 1],[35.0, 2, 'D', 1]

F
###Angular Magnetoresistance Oscillations in Organic Conductors|A. G. Lebed,Heon-Ick Ha,M. J. Naughton###
(386844, 386844)
 As an example, we showthat suggested theory is in qualitative and quantitative agreements with therecent experimental data obtained on (TMTSF)2ClO4 conductor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 1, 'D', 1],[85.0, 2, 'D', 1]

ClO4
###Angular Magnetoresistance Oscillations in Organic Conductors|A. G. Lebed,Heon-Ick Ha,M. J. Naughton###
(386847, 386849)
 As an example, we showthat suggested theory is in qualitative and quantitative agreements with therecent experimental data obtained on (TMTSF)2ClO4 conductor.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 1, 'D', 1],[88.0, 2, 'D', 1]

As
###Magnetoresistance in the s-d Model with Arbitrary Impurity Spin|Kaihe Ding,Bao-Heng Zhao###
(387199, 387199)
 As the impurity spin S 1/2, our results coincide with those obtained by Ishii textitet al%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 2, ',', 0]

S
###Magnetoresistance in the s-d Model with Arbitrary Impurity Spin|Kaihe Ding,Bao-Heng Zhao###
(387207, 387207)
 As the impurity spin S 1/2, our results coincide with those obtained by Ishii textitet al%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 2, ',', 0]

S
###Magnetoresistance in the s-d Model with Arbitrary Impurity Spin|Kaihe Ding,Bao-Heng Zhao###
(387261, 387261)
 Thecompairsion between the theoretical and experimental magneticresistence forimpurity S  1/2 is re-examined.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 2, ',', 1]

GaAs/AlGaAs
###Radiation-induced zero-resistance states with resolved Landau levels|R. G. Mani###
(387312, 387317)
 The microwave-photoexcited high mobility GaAs/AlGaAs two-dimensional electronsystem exhibits an oscillatory-magnetoresistance with vanishing resistance inthe vicinity of magnetic fields B  [4/(4j<missing VAR>1)] Bf<missing VAR>, where Bf<missing VAR> 2pitextitfm/e<missing VAR>, m<missing VAR> is an the effective mass, e<missing VAR> is the charge,textitf<missing VAR> is the microwave frequency, and j<missing VAR> 1,2,3.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[110.0, 1, ',', 0],[112.0, 2, ',', 0]

B
###Radiation-induced zero-resistance states with resolved Landau levels|R. G. Mani###
(387355, 387355)
 The microwave-photoexcited high mobility GaAs/AlGaAs two-dimensional electronsystem exhibits an oscillatory-magnetoresistance with vanishing resistance inthe vicinity of magnetic fields B  [4/(4j<missing VAR>1)] Bf<missing VAR>, where Bf<missing VAR> 2pitextitfm/e<missing VAR>, m<missing VAR> is an the effective mass, e<missing VAR> is the charge,textitf<missing VAR> is the microwave frequency, and j<missing VAR> 1,2,3.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 1, ',', 0],[74.0, 2, ',', 0]

B
###Radiation-induced zero-resistance states with resolved Landau levels|R. G. Mani###
(387368, 387368)
 The microwave-photoexcited high mobility GaAs/AlGaAs two-dimensional electronsystem exhibits an oscillatory-magnetoresistance with vanishing resistance inthe vicinity of magnetic fields B  [4/(4j<missing VAR>1)] Bf<missing VAR>, where Bf<missing VAR> 2pitextitfm/e<missing VAR>, m<missing VAR> is an the effective mass, e<missing VAR> is the charge,textitf<missing VAR> is the microwave frequency, and j<missing VAR> 1,2,3.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 1, ',', 0],[61.0, 2, ',', 0]

B
###Radiation-induced zero-resistance states with resolved Landau levels|R. G. Mani###
(387374, 387374)
 The microwave-photoexcited high mobility GaAs/AlGaAs two-dimensional electronsystem exhibits an oscillatory-magnetoresistance with vanishing resistance inthe vicinity of magnetic fields B  [4/(4j<missing VAR>1)] Bf<missing VAR>, where Bf<missing VAR> 2pitextitfm/e<missing VAR>, m<missing VAR> is an the effective mass, e<missing VAR> is the charge,textitf<missing VAR> is the microwave frequency, and j<missing VAR> 1,2,3.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 1, ',', 0],[55.0, 2, ',', 0]

Co
###Microwave spectroscopy on magnetization reversal dynamics of nanomagnets with electronic detection|J. Grollier,M. V. Costache,C. H. van der Wal,B. J. van Wees###
(387575, 387575)
 We used Co strips of 2 um x<missing VAR> 130 nm x<missing VAR> 40nm, and microwave fields were applied via an on-chip coplanar wave guide.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 2, 'um', 0],[8.0, 130, 'nm', 0]

La0.67Sr0.33MnO3/Al2O3
###Enhancement of low field magnetoresistance at room temperature in La$_{0.67}$Sr$_{0.33}$MnO$_{3}$/Al$_{2}$O$_{3}$ nanocomposite|Soumik Mukhopadhyay,I. Das###
(387692, 387703)
Enhancement of low field magnetoresistance at room temperature in La0.67Sr0.33MnO3/Al2O3 nanocomposite.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

La0.67Sr0.33MnO3
###Enhancement of low field magnetoresistance at room temperature in La$_{0.67}$Sr$_{0.33}$MnO$_{3}$/Al$_{2}$O$_{3}$ nanocomposite|Soumik Mukhopadhyay,I. Das###
(387719, 387725)
 Magnetotransport properties in a nanocrystallineLa0.67Sr0.33MnO3/micron sized Al2O3 granular compositewith different concentrations of Al2O3 have been studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.066,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.134,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Al2O3
###Enhancement of low field magnetoresistance at room temperature in La$_{0.67}$Sr$_{0.33}$MnO$_{3}$/Al$_{2}$O$_{3}$ nanocomposite|Soumik Mukhopadhyay,I. Das###
(387731, 387734)
 Magnetotransport properties in a nanocrystallineLa0.67Sr0.33MnO3/micron sized Al2O3 granular compositewith different concentrations of Al2O3 have been studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Al2O3
###Enhancement of low field magnetoresistance at room temperature in La$_{0.67}$Sr$_{0.33}$MnO$_{3}$/Al$_{2}$O$_{3}$ nanocomposite|Soumik Mukhopadhyay,I. Das###
(387749, 387752)
 Magnetotransport properties in a nanocrystallineLa0.67Sr0.33MnO3/micron sized Al2O3 granular compositewith different concentrations of Al2O3 have been studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Al2O3
###Enhancement of low field magnetoresistance at room temperature in La$_{0.67}$Sr$_{0.33}$MnO$_{3}$/Al$_{2}$O$_{3}$ nanocomposite|Soumik Mukhopadhyay,I. Das###
(387845, 387848)
 Enhancement of low field magnetoresistance atroom temperature with the introduction of Al2O3 has been observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CeFe2
###Sharp magnetization step across the ferromagnetic to antiferromagnetic transition in doped-CeFe$_2$ alloys|S. B. Roy,M. K. Chattopadhyay,P. Chaddah,A. K. Nigam###
(387887, 387889)
Sharp magnetization step across the ferromagnetic to antiferromagnetic transition in doped-CeFe2 alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 5, 'K', 1]

CeFe2
###Sharp magnetization step across the ferromagnetic to antiferromagnetic transition in doped-CeFe$_2$ alloys|S. B. Roy,M. K. Chattopadhyay,P. Chaddah,A. K. Nigam###
(387929, 387931)
 Very sharp magnetization step is observed across the field inducedantiferromagnetic to ferromagnetic transition in various doped-CeFe2 alloys,when the measurement is performed below 5K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 5, 'K', 0]

In
###Sharp magnetization step across the ferromagnetic to antiferromagnetic transition in doped-CeFe$_2$ alloys|S. B. Roy,M. K. Chattopadhyay,P. Chaddah,A. K. Nigam###
(387951, 387951)
 In the higher temperature regime(T<missing VAR>>5K) this transition is quite smooth in nature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 5, 'K', 1]

K
###Sharp magnetization step across the ferromagnetic to antiferromagnetic transition in doped-CeFe$_2$ alloys|S. B. Roy,M. K. Chattopadhyay,P. Chaddah,A. K. Nigam###
(387966, 387966)
 In the higher temperature regime(T<missing VAR>>5K) this transition is quite smooth in nature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 5, 'K', 1]

Gd5Ge4
###Sharp magnetization step across the ferromagnetic to antiferromagnetic transition in doped-CeFe$_2$ alloys|S. B. Roy,M. K. Chattopadhyay,P. Chaddah,A. K. Nigam###
(388016, 388019)
 Comparing with the recentlyobserved similar behaviour in manganites showing colossal magnetoresistance andmagnetocaloric material Gd5Ge4 we argue that such magnetization step is ageneralized feature of a disorder influenced first order phase transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4444444444444444,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5555555555555556,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 5, 'K', 2]

Fe
###Magnetic and Transport Properties of Fe-Ag granular multilayers|M. Csontos,J. Balogh,D. Kaptas,L. F. Kiss,G. Mihaly###
(388077, 388077)
Magnetic and Transport Properties of Fe-Ag granular multilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ag
###Magnetic and Transport Properties of Fe-Ag granular multilayers|M. Csontos,J. Balogh,D. Kaptas,L. F. Kiss,G. Mihaly###
(388079, 388079)
Magnetic and Transport Properties of Fe-Ag granular multilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Magnetic and Transport Properties of Fe-Ag granular multilayers|M. Csontos,J. Balogh,D. Kaptas,L. F. Kiss,G. Mihaly###
(388110, 388110)
 Results of magnetization, magnetotransport and Mossbauer spectroscopymeasurements of sequentially evaporated Fe-Ag granular composites arepresented.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ag
###Magnetic and Transport Properties of Fe-Ag granular multilayers|M. Csontos,J. Balogh,D. Kaptas,L. F. Kiss,G. Mihaly###
(388112, 388112)
 Results of magnetization, magnetotransport and Mossbauer spectroscopymeasurements of sequentially evaporated Fe-Ag granular composites arepresented.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Rashba spin-orbit coupling and spin precession in carbon nanotubes|A. De Martino,R. Egger###
(388338, 388338)
 We focus onclean non-interacting nanotubes with tunable number of subbands N.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CeRu2Si2
###Continuous Evolution of the Fermi Surface of CeRu2Si2 across the Metamagnetic Transition|R. Daou,C. Bergemann,S. R. Julian###
(388661, 388665)
Continuous Evolution of the Fermi Surface of CeRu2Si2 across the Metamagnetic Transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CeRu2Si2
###Continuous Evolution of the Fermi Surface of CeRu2Si2 across the Metamagnetic Transition|R. Daou,C. Bergemann,S. R. Julian###
(388717, 388721)
 We present new, high resolution Hall effect and magnetoresistancemeasurements across the metamagnetic transition in the heavy fermion compoundCeRu2Si2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YBCO
###Experimental search for anisotropic flux flow resistivity in the a-b plane of optimally doped epitaxial thin films of YBCO|G. Koren,P. Aronov,E. Polturak###
(388890, 388893)
Experimental search for anisotropic flux flow resistivity in the a-b<missing VAR> plane of optimally doped epitaxial thin films of YBCO.
Featurization terminated normally.
0,0,0,0,0.25,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YBCO
###Experimental search for anisotropic flux flow resistivity in the a-b plane of optimally doped epitaxial thin films of YBCO|G. Koren,P. Aronov,E. Polturak###
(388941, 388944)
 Transport measurements along the node and anti-node directions in the a-b<missing VAR>plane of optimally doped and epitaxial thin films of YBCO are reported.
Featurization terminated normally.
0,0,0,0,0.25,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YBCO
###Experimental search for anisotropic flux flow resistivity in the a-b plane of optimally doped epitaxial thin films of YBCO|G. Koren,P. Aronov,E. Polturak###
(389053, 389056)
 This result suggests that within the experimental error ofour measurements, no correspondence is found between the flux pinningproperties in YBCO and the d<missing VAR>-wave nature of the order parameter.
Featurization terminated normally.
0,0,0,0,0.25,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###Tight-binding model of spin-polarized tunnelling in (Ga,Mn)As-based structures|P. Sankowski,P. Kacman,J. Majewski,T. Dietl###
(389276, 389276)
Tight-binding model of spin-polarized tunnelling in (Ga,Mn)As-based structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Tight-binding model of spin-polarized tunnelling in (Ga,Mn)As-based structures|P. Sankowski,P. Kacman,J. Majewski,T. Dietl###
(389278, 389278)
Tight-binding model of spin-polarized tunnelling in (Ga,Mn)As-based structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Tight-binding model of spin-polarized tunnelling in (Ga,Mn)As-based structures|P. Sankowski,P. Kacman,J. Majewski,T. Dietl###
(389280, 389280)
Tight-binding model of spin-polarized tunnelling in (Ga,Mn)As-based structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###Tight-binding model of spin-polarized tunnelling in (Ga,Mn)As-based structures|P. Sankowski,P. Kacman,J. Majewski,T. Dietl###
(389348, 389348)
 The Landauer-Buettiker formalism combined with the tight-binding transfermatrix method is used to describe the results of recent experiments the hightunneling magnetoresistance (TMR) in (Ga,Mn)As-based trilayers and highlypolarized spin injection in p<missing VAR>-(Ga,Mn)As/n<missing VAR>-GaAs Zener diode.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Tight-binding model of spin-polarized tunnelling in (Ga,Mn)As-based structures|P. Sankowski,P. Kacman,J. Majewski,T. Dietl###
(389350, 389350)
 The Landauer-Buettiker formalism combined with the tight-binding transfermatrix method is used to describe the results of recent experiments the hightunneling magnetoresistance (TMR) in (Ga,Mn)As-based trilayers and highlypolarized spin injection in p<missing VAR>-(Ga,Mn)As/n<missing VAR>-GaAs Zener diode.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Tight-binding model of spin-polarized tunnelling in (Ga,Mn)As-based structures|P. Sankowski,P. Kacman,J. Majewski,T. Dietl###
(389352, 389352)
 The Landauer-Buettiker formalism combined with the tight-binding transfermatrix method is used to describe the results of recent experiments the hightunneling magnetoresistance (TMR) in (Ga,Mn)As-based trilayers and highlypolarized spin injection in p<missing VAR>-(Ga,Mn)As/n<missing VAR>-GaAs Zener diode.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###Tight-binding model of spin-polarized tunnelling in (Ga,Mn)As-based structures|P. Sankowski,P. Kacman,J. Majewski,T. Dietl###
(389374, 389374)
 The Landauer-Buettiker formalism combined with the tight-binding transfermatrix method is used to describe the results of recent experiments the hightunneling magnetoresistance (TMR) in (Ga,Mn)As-based trilayers and highlypolarized spin injection in p<missing VAR>-(Ga,Mn)As/n<missing VAR>-GaAs Zener diode.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Tight-binding model of spin-polarized tunnelling in (Ga,Mn)As-based structures|P. Sankowski,P. Kacman,J. Majewski,T. Dietl###
(389376, 389376)
 The Landauer-Buettiker formalism combined with the tight-binding transfermatrix method is used to describe the results of recent experiments the hightunneling magnetoresistance (TMR) in (Ga,Mn)As-based trilayers and highlypolarized spin injection in p<missing VAR>-(Ga,Mn)As/n<missing VAR>-GaAs Zener diode.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Tight-binding model of spin-polarized tunnelling in (Ga,Mn)As-based structures|P. Sankowski,P. Kacman,J. Majewski,T. Dietl###
(389378, 389378)
 The Landauer-Buettiker formalism combined with the tight-binding transfermatrix method is used to describe the results of recent experiments the hightunneling magnetoresistance (TMR) in (Ga,Mn)As-based trilayers and highlypolarized spin injection in p<missing VAR>-(Ga,Mn)As/n<missing VAR>-GaAs Zener diode.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Tight-binding model of spin-polarized tunnelling in (Ga,Mn)As-based structures|P. Sankowski,P. Kacman,J. Majewski,T. Dietl###
(389382, 389383)
 The Landauer-Buettiker formalism combined with the tight-binding transfermatrix method is used to describe the results of recent experiments the hightunneling magnetoresistance (TMR) in (Ga,Mn)As-based trilayers and highlypolarized spin injection in p<missing VAR>-(Ga,Mn)As/n<missing VAR>-GaAs Zener diode.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeCo
###Influence of Roughness and Disorder on Tunneling Magnetoresistance|P. X. Xu,V. M. Karpan,K. Xia,M. Zwierzycki,I. Marushchenko,P. J. Kelly###
(389921, 389922)
 A systematic, quantitative study of the effect of interface roughness anddisorder on the magnetoresistance of FeCovacuumFeCo magnetic tunneljunctions is presented based upon parameter-free electronic structurecalculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeCo
###Influence of Roughness and Disorder on Tunneling Magnetoresistance|P. X. Xu,V. M. Karpan,K. Xia,M. Zwierzycki,I. Marushchenko,P. J. Kelly###
(389924, 389925)
 A systematic, quantitative study of the effect of interface roughness anddisorder on the magnetoresistance of FeCovacuumFeCo magnetic tunneljunctions is presented based upon parameter-free electronic structurecalculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###Domain-wall resistance in ferromagnetic (Ga,Mn)As|D. Chiba,M. Yamanouchi,F. Matsukura,T. Dietl,H. Ohno###
(390073, 390073)
Domain-wall resistance in ferromagnetic (Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Domain-wall resistance in ferromagnetic (Ga,Mn)As|D. Chiba,M. Yamanouchi,F. Matsukura,T. Dietl,H. Ohno###
(390075, 390075)
Domain-wall resistance in ferromagnetic (Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Domain-wall resistance in ferromagnetic (Ga,Mn)As|D. Chiba,M. Yamanouchi,F. Matsukura,T. Dietl,H. Ohno###
(390077, 390077)
Domain-wall resistance in ferromagnetic (Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###Domain-wall resistance in ferromagnetic (Ga,Mn)As|D. Chiba,M. Yamanouchi,F. Matsukura,T. Dietl,H. Ohno###
(390106, 390106)
 A series of microstructures designed to pin domain-walls (D<missing VAR>Ws) in (Ga,Mn)Aswith perpendicular magnetic anisotropy has been employed to determine extrinsicand intrinsic contributions to D<missing VAR>W resistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Domain-wall resistance in ferromagnetic (Ga,Mn)As|D. Chiba,M. Yamanouchi,F. Matsukura,T. Dietl,H. Ohno###
(390108, 390108)
 A series of microstructures designed to pin domain-walls (D<missing VAR>Ws) in (Ga,Mn)Aswith perpendicular magnetic anisotropy has been employed to determine extrinsicand intrinsic contributions to D<missing VAR>W resistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Domain-wall resistance in ferromagnetic (Ga,Mn)As|D. Chiba,M. Yamanouchi,F. Matsukura,T. Dietl,H. Ohno###
(390110, 390110)
 A series of microstructures designed to pin domain-walls (D<missing VAR>Ws) in (Ga,Mn)Aswith perpendicular magnetic anisotropy has been employed to determine extrinsicand intrinsic contributions to D<missing VAR>W resistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Domain-wall resistance in ferromagnetic (Ga,Mn)As|D. Chiba,M. Yamanouchi,F. Matsukura,T. Dietl,H. Ohno###
(390143, 390143)
 A series of microstructures designed to pin domain-walls (D<missing VAR>Ws) in (Ga,Mn)Aswith perpendicular magnetic anisotropy has been employed to determine extrinsicand intrinsic contributions to D<missing VAR>W resistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Domain-wall resistance in ferromagnetic (Ga,Mn)As|D. Chiba,M. Yamanouchi,F. Matsukura,T. Dietl,H. Ohno###
(390185, 390185)
 The former is explainedquantitatively as resulting from a polarity change in the Hall electric fieldat D<missing VAR>W.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Two Types of Microwave-Induced Magnetoresistance Oscillations in a 2D Electron Gas at Large Filling Factors|A. A. Bykov,A. V. Goran,D. R. Islamov,A. K. Bakarov,Jing-qiao Zhang,Sergey Vitkalov###
(390721, 390722)
 The influence of microwave radiation (1.2-140 G<missing VAR>Hz) on resistance ofhigh-mobility two-dimensional electron gas in GaAs quantum wells is studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 2, 'D', 1]

B
###Two Types of Microwave-Induced Magnetoresistance Oscillations in a 2D Electron Gas at Large Filling Factors|A. A. Bykov,A. V. Goran,D. R. Islamov,A. K. Bakarov,Jing-qiao Zhang,Sergey Vitkalov###
(390754, 390754)
Two series of microwave-induced magnetoresistance oscillations periodic in 1/Bwere observed under microwave radiation.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 2, 'D', 2]

In
###Fractional quantum Hall effect without energy gap|S. S. Murzin,S. I. Dorozhkin,G. E. Tsydynzhapov,V. N. Zverev###
(391431, 391431)
 In the fractional quantum Hall effect regime we measure diagonal(rhoxx) and Hall (rhoxy) magnetoresistivity tensor components oftwo-dimensional electron system (2DES) in gated GaAs/Alx<missing VAR>Ga1-xAsheterojunctions, together with capacitance between 2DES and the gate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 2, 'DES', 0]

S
###Fractional quantum Hall effect without energy gap|S. S. Murzin,S. I. Dorozhkin,G. E. Tsydynzhapov,V. N. Zverev###
(391487, 391487)
 In the fractional quantum Hall effect regime we measure diagonal(rhoxx) and Hall (rhoxy) magnetoresistivity tensor components oftwo-dimensional electron system (2DES) in gated GaAs/Alx<missing VAR>Ga1-xAsheterojunctions, together with capacitance between 2DES and the gate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 2, 'DES', 0]

GaAs/Al
###Fractional quantum Hall effect without energy gap|S. S. Murzin,S. I. Dorozhkin,G. E. Tsydynzhapov,V. N. Zverev###
(391494, 391497)
 In the fractional quantum Hall effect regime we measure diagonal(rhoxx) and Hall (rhoxy) magnetoresistivity tensor components oftwo-dimensional electron system (2DES) in gated GaAs/Alx<missing VAR>Ga1-xAsheterojunctions, together with capacitance between 2DES and the gate.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[19.0, 2, 'DES', 0]

Ga1-xAs
###Fractional quantum Hall effect without energy gap|S. S. Murzin,S. I. Dorozhkin,G. E. Tsydynzhapov,V. N. Zverev###
(391499, 391503)
 In the fractional quantum Hall effect regime we measure diagonal(rhoxx) and Hall (rhoxy) magnetoresistivity tensor components oftwo-dimensional electron system (2DES) in gated GaAs/Alx<missing VAR>Ga1-xAsheterojunctions, together with capacitance between 2DES and the gate.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[13.0, 2, 'DES', 0]

In
###Magnetoresistance in Thin Permalloy Film (10nm-thick and 30-200nm-wide) Nanocontacts Fabricated by e-Beam Lithography|Nicolas Garcia,Cheng Hao,Lu Yonghua,Manuel. Munoz,Yifang Chen,Zhengqi Lu,Yun Zhou,Genhua Pan,Zheng Cui,A. A. Pasa###
(391652, 391652)
 In this paper we show spin dependent transport experiments innanoconstrictions ranging from 30 to 200nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 30, 'to', 0],[27.0, 200, 'nm', 0],[158.0, 20, 'mV', 4],[161.0, 20, 'Oe', 4]

Fe/GaAs/Fe
###Bias dependent inversion of tunneling magnetoresistance in Fe/GaAs/Fe tunnel junctions|J. Moser,M. Zenger,C. Gerl,D. Schuh,R. Meier,P. Chen,G. Bayreuther,W. Wegscheider,D. Weiss,C. -H. Lai,R. -T. Huang,M. Kosuth,H. Ebert###
(391838, 391843)
Bias dependent inversion of tunneling magnetoresistance in Fe/GaAs/Fe tunnel junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Fe/GaAs/Fe
###Bias dependent inversion of tunneling magnetoresistance in Fe/GaAs/Fe tunnel junctions|J. Moser,M. Zenger,C. Gerl,D. Schuh,R. Meier,P. Chen,G. Bayreuther,W. Wegscheider,D. Weiss,C. -H. Lai,R. -T. Huang,M. Kosuth,H. Ebert###
(391862, 391867)
 We investigated spin dependent transport through Fe/GaAs/Fe tunnel junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Fe/GaAs
###Bias dependent inversion of tunneling magnetoresistance in Fe/GaAs/Fe tunnel junctions|J. Moser,M. Zenger,C. Gerl,D. Schuh,R. Meier,P. Chen,G. Bayreuther,W. Wegscheider,D. Weiss,C. -H. Lai,R. -T. Huang,M. Kosuth,H. Ebert###
(391902, 391905)
The tunneling magnetoresistance effect (TMR) was probed for different types ofFe/GaAs interfaces.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Fe/GaAs
###Bias dependent inversion of tunneling magnetoresistance in Fe/GaAs/Fe tunnel junctions|J. Moser,M. Zenger,C. Gerl,D. Schuh,R. Meier,P. Chen,G. Bayreuther,W. Wegscheider,D. Weiss,C. -H. Lai,R. -T. Huang,M. Kosuth,H. Ebert###
(392021, 392024)
 This is a first experimental signature for band structureeffects at a Fe/GaAs interface and relevant for spin injection experiments.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

GaMnAs
###Quantum-size effect and tunneling magnetoresistance in ferromagnetic-semiconductor quantum heterostructures|S. Ohya,P. N. Hai,Y. Mizuno,M. Tanaka###
(392326, 392328)
 We report on the resonant tunneling effect and the increase of tunnelingmagnetoresistance (TMR) induced by it in ferromagnetic-semiconductor GaMnAsquantum-well heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaMnAs
###Quantum-size effect and tunneling magnetoresistance in ferromagnetic-semiconductor quantum heterostructures|S. Ohya,P. N. Hai,Y. Mizuno,M. Tanaka###
(392350, 392352)
 The observed quantum levels of the GaMnAsquantum well were successfully explained by the valence-band kp model with thep-d exchange interaction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(Fe)
###All-electrical measurement of spin injection in a magnetic $p$-$n$ junction diode|Peifeng Chen,Juergen Moser,Philipp Kotissek,Janusz Sadowski,Marcus Zenger,Dieter Weiss,Werner Wegscheider###
(392541, 392543)
 The injection of spin-polarized electrons in asemiconductor is achieved by driving a current from a ferromagnetic injector(Fe), into a bulk semiconductor (n<missing VAR>-GaAs) via schottky contact.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###All-electrical measurement of spin injection in a magnetic $p$-$n$ junction diode|Peifeng Chen,Juergen Moser,Philipp Kotissek,Janusz Sadowski,Marcus Zenger,Dieter Weiss,Werner Wegscheider###
(392558, 392558)
 The injection of spin-polarized electrons in asemiconductor is achieved by driving a current from a ferromagnetic injector(Fe), into a bulk semiconductor (n<missing VAR>-GaAs) via schottky contact.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###All-electrical measurement of spin injection in a magnetic $p$-$n$ junction diode|Peifeng Chen,Juergen Moser,Philipp Kotissek,Janusz Sadowski,Marcus Zenger,Dieter Weiss,Werner Wegscheider###
(392587, 392587)
 For detection,a diluted magnetic semiconductor (p<missing VAR>-GaMnAs) layer is used.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Dirac and Normal Fermions in Graphite and Graphene: Implications to the Quantum Hall Effect|Igor A. Luk'yanchuk,Yakov Kopelevich###
(392887, 392887)
 Spectral analysis of Shubnikov de Haas (SdH) oscillations ofmagnetoresistance and of Quantum Hall Effect (QHE) measured in quasi-2D<missing VAR> highlyoriented pyrolytic graphite (HOPG) [Phys.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 90, ',', 3],[95.0, 0, 'and', 3]

HOP
###Dirac and Normal Fermions in Graphite and Graphene: Implications to the Quantum Hall Effect|Igor A. Luk'yanchuk,Yakov Kopelevich###
(392932, 392934)
 Spectral analysis of Shubnikov de Haas (SdH) oscillations ofmagnetoresistance and of Quantum Hall Effect (QHE) measured in quasi-2D<missing VAR> highlyoriented pyrolytic graphite (HOPG) [Phys.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 90, ',', 3],[48.0, 0, 'and', 3]

HOP
###Dirac and Normal Fermions in Graphite and Graphene: Implications to the Quantum Hall Effect|Igor A. Luk'yanchuk,Yakov Kopelevich###
(393051, 393053)
 We demonstrate that recentlyreported integer- and semi-integer QHE for bi-layer and single-layer graphenestake place simultaneously in HOPG<missing VAR> samples.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 90, ',', 1],[69.0, 0, 'and', 1]

O3
###Interface Magnetoresistance in Manganite-Titanate Heterojunctions|T. Susaki,N. Nakagawa,H. Y. Hwang###
(393105, 393106)
 We have found that the current- voltage characteristics ofLa0.7Sr0.3MnO3(-delta)/NbSrTiO3 rectifying junctions are quantitativelywell-described by (thermally-assisted) tunneling with an effectivelytemperature-independent Schottky barrier under no magnetic field, while thoseof the oxygen deficient junction remarkably deviate from such a simple behavioras magnetic field is applied.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbSrTiO3
###Interface Magnetoresistance in Manganite-Titanate Heterojunctions|T. Susaki,N. Nakagawa,H. Y. Hwang###
(393112, 393116)
 We have found that the current- voltage characteristics ofLa0.7Sr0.3MnO3(-delta)/NbSrTiO3 rectifying junctions are quantitativelywell-described by (thermally-assisted) tunneling with an effectivelytemperature-independent Schottky barrier under no magnetic field, while thoseof the oxygen deficient junction remarkably deviate from such a simple behavioras magnetic field is applied.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbSe3
###Anomalous asymmetry of magnetoresistance in NbSe$_3$ single crystals|A. A. Sinchenko,Yu. I. Latyshev,A. P. Orlov,P. Monceau###
(393279, 393281)
Anomalous asymmetry of magnetoresistance in NbSe3 single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbSe3
###Anomalous asymmetry of magnetoresistance in NbSe$_3$ single crystals|A. A. Sinchenko,Yu. I. Latyshev,A. P. Orlov,P. Monceau###
(393319, 393321)
 A pronounced asymmetry of magnetoresistance with respect to the magneticfield direction is observed for NbSe3 crystals placed in a magnetic fieldperpendicular to their conducting planes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B0
###Anomalous asymmetry of magnetoresistance in NbSe$_3$ single crystals|A. A. Sinchenko,Yu. I. Latyshev,A. P. Orlov,P. Monceau###
(393393, 393394)
 It is shown that the effect persistsin a wide temperature range and manifests itself starting from a certainmagnetic induction value B0, which at T<missing VAR>4.2 K corresponds to thetransition to the quantum limit, i<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Anomalous asymmetry of magnetoresistance in NbSe$_3$ single crystals|A. A. Sinchenko,Yu. I. Latyshev,A. P. Orlov,P. Monceau###
(393404, 393404)
 It is shown that the effect persistsin a wide temperature range and manifests itself starting from a certainmagnetic induction value B0, which at T<missing VAR>4.2 K corresponds to thetransition to the quantum limit, i<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgB2
###Intergrain connectivity and resistive broadening in vortex state: a comparison between MgB2, NbSe2 and Bi2Sr2Ca2Cu3O10 superconductors|S. D. Kaushik,S. Patnaik###
(393480, 393482)
Intergrain connectivity and resistive broadening in vortex state a comparison between MgB2, NbSe2 and Bi2Sr2Ca2Cu3O10 superconductors.
Featurization terminated normally.
0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbSe2
###Intergrain connectivity and resistive broadening in vortex state: a comparison between MgB2, NbSe2 and Bi2Sr2Ca2Cu3O10 superconductors|S. D. Kaushik,S. Patnaik###
(393485, 393487)
Intergrain connectivity and resistive broadening in vortex state a comparison between MgB2, NbSe2 and Bi2Sr2Ca2Cu3O10 superconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Sr2Ca2Cu3O10
###Intergrain connectivity and resistive broadening in vortex state: a comparison between MgB2, NbSe2 and Bi2Sr2Ca2Cu3O10 superconductors|S. D. Kaushik,S. Patnaik###
(393491, 393500)
Intergrain connectivity and resistive broadening in vortex state a comparison between MgB2, NbSe2 and Bi2Sr2Ca2Cu3O10 superconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5263157894736842,0,0,0,0,0,0,0,0,0,0,0,0.10526315789473684,0,0,0,0,0,0,0,0,0.15789473684210525,0,0,0,0,0,0,0,0,0.10526315789473684,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.10526315789473684,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgB2
###Intergrain connectivity and resistive broadening in vortex state: a comparison between MgB2, NbSe2 and Bi2Sr2Ca2Cu3O10 superconductors|S. D. Kaushik,S. Patnaik###
(393580, 393582)
 MgB2, NbSe2 and Bi2Sr2Ca2Cu3O10.
Featurization terminated normally.
0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbSe2
###Intergrain connectivity and resistive broadening in vortex state: a comparison between MgB2, NbSe2 and Bi2Sr2Ca2Cu3O10 superconductors|S. D. Kaushik,S. Patnaik###
(393585, 393587)
 MgB2, NbSe2 and Bi2Sr2Ca2Cu3O10.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Sr2Ca2Cu3O10
###Intergrain connectivity and resistive broadening in vortex state: a comparison between MgB2, NbSe2 and Bi2Sr2Ca2Cu3O10 superconductors|S. D. Kaushik,S. Patnaik###
(393591, 393600)
 MgB2, NbSe2 and Bi2Sr2Ca2Cu3O10.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5263157894736842,0,0,0,0,0,0,0,0,0,0,0,0.10526315789473684,0,0,0,0,0,0,0,0,0.15789473684210525,0,0,0,0,0,0,0,0,0.10526315789473684,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.10526315789473684,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Intergrain connectivity and resistive broadening in vortex state: a comparison between MgB2, NbSe2 and Bi2Sr2Ca2Cu3O10 superconductors|S. D. Kaushik,S. Patnaik###
(393640, 393640)
 From high fieldtransport measurements, H-T<missing VAR> phase diagram is ascertained for the three systemswith varying degrees of fluctuation and connectivity.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaMnAs
###AMR and magnetometry studies of ultra thin GaMnAs films|A. W. Rushforth,A. D. Giddings,K. W. Edmonds,R. P. Campion,C. T. Foxon,B. L. Gallagher###
(393700, 393702)
AMR and magnetometry studies of ultra thin GaMnAs films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###AMR and magnetometry studies of ultra thin GaMnAs films|A. W. Rushforth,A. D. Giddings,K. W. Edmonds,R. P. Campion,C. T. Foxon,B. L. Gallagher###
(393745, 393745)
 We have measured the Anisotropic Magnetoresistance (AMR) of ultra thin (5nm)Ga(0.95)Mn(0.05)As films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###AMR and magnetometry studies of ultra thin GaMnAs films|A. W. Rushforth,A. D. Giddings,K. W. Edmonds,R. P. Campion,C. T. Foxon,B. L. Gallagher###
(393810, 393810)
 At low temperatures, transport measurements and SQ<missing VAR>UID<missing VAR> magnetometrysuggest that the magnetisation has a component pointing out of the plane of thefilm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###AMR and magnetometry studies of ultra thin GaMnAs films|A. W. Rushforth,A. D. Giddings,K. W. Edmonds,R. P. Campion,C. T. Foxon,B. L. Gallagher###
(393823, 393823)
 At low temperatures, transport measurements and SQ<missing VAR>UID<missing VAR> magnetometrysuggest that the magnetisation has a component pointing out of the plane of thefilm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

UI
###AMR and magnetometry studies of ultra thin GaMnAs films|A. W. Rushforth,A. D. Giddings,K. W. Edmonds,R. P. Campion,C. T. Foxon,B. L. Gallagher###
(393825, 393826)
 At low temperatures, transport measurements and SQ<missing VAR>UID<missing VAR> magnetometrysuggest that the magnetisation has a component pointing out of the plane of thefilm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Au/Cr
###Ab-initio GMR and current-induced torques in Au/Cr multilayers|P. M. Haney,D. Waldron,R. A. Duine,A. S. Nunez,H. Guo,A. H. MacDonald###
(393890, 393892)
Ab-initio GMR and current-induced torques in Au/Cr multilayers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

CI
###Ab-initio GMR and current-induced torques in Au/Cr multilayers|P. M. Haney,D. Waldron,R. A. Duine,A. S. Nunez,H. Guo,A. H. MacDonald###
(393935, 393936)
 We report on an em ab-initio study of giant magnetoresistance (GMR) andcurrent-induced-torques (CITs) in Cr/Au multilayers that is based onnon-equilibrium Greens<missing VAR> functions and spin density functional theory.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr/Au
###Ab-initio GMR and current-induced torques in Au/Cr multilayers|P. M. Haney,D. Waldron,R. A. Duine,A. S. Nunez,H. Guo,A. H. MacDonald###
(393942, 393944)
 We report on an em ab-initio study of giant magnetoresistance (GMR) andcurrent-induced-torques (CITs) in Cr/Au multilayers that is based onnon-equilibrium Greens<missing VAR> functions and spin density functional theory.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Cr/Au
###Ab-initio GMR and current-induced torques in Au/Cr multilayers|P. M. Haney,D. Waldron,R. A. Duine,A. S. Nunez,H. Guo,A. H. MacDonald###
(394009, 394011)
 We findsubstantial GMR due primarily to a spin-dependent resonance centered at theCr/Au interface and predict that the CITs are strong enough to switch theantiferromagnetic order parameter at current-densities sim 100 times smallerthan typical ferromagnetic metal circuit switching densities.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

CI
###Ab-initio GMR and current-induced torques in Au/Cr multilayers|P. M. Haney,D. Waldron,R. A. Duine,A. S. Nunez,H. Guo,A. H. MacDonald###
(394023, 394024)
 We findsubstantial GMR due primarily to a spin-dependent resonance centered at theCr/Au interface and predict that the CITs are strong enough to switch theantiferromagnetic order parameter at current-densities sim 100 times smallerthan typical ferromagnetic metal circuit switching densities.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr3Ru2O7
###Formation of a Nematic Fluid at High Fields in Sr3Ru2O7|R. A. Borzi,S. A. Grigera,J. Farrell,R. S. Perry,S. J. S. Lister,S. L. Lee,D. A. Tennant,Y. Maeno,A. P. Mackenzie###
(394297, 394302)
Formation of a Nematic Fluid at High Fields in Sr3Ru2O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Formation of a Nematic Fluid at High Fields in Sr3Ru2O7|R. A. Borzi,S. A. Grigera,J. Farrell,R. S. Perry,S. J. S. Lister,S. L. Lee,D. A. Tennant,Y. Maeno,A. P. Mackenzie###
(394305, 394305)
 In principle, a complex assembly of strongly interacting electrons canself-organise into a wide variety of collective states, but relatively few suchstates have been identified in practice.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr3Ru2O7
###Formation of a Nematic Fluid at High Fields in Sr3Ru2O7|R. A. Borzi,S. A. Grigera,J. Farrell,R. S. Perry,S. J. S. Lister,S. L. Lee,D. A. Tennant,Y. Maeno,A. P. Mackenzie###
(394401, 394406)
 We report that, in the close vicinityof a metamagnetic quantum critical point, high purity Sr3Ru2O7 possesses alarge magnetoresistive anisotropy, consistent with the existence of anelectronic nematic fluid.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Formation of a Nematic Fluid at High Fields in Sr3Ru2O7|R. A. Borzi,S. A. Grigera,J. Farrell,R. S. Perry,S. J. S. Lister,S. L. Lee,D. A. Tennant,Y. Maeno,A. P. Mackenzie###
(394482, 394483)
 We discuss a striking phenomenological similaritybetween our observations and those made in high purity two-dimensional electronfluids in GaAs devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuS
###Enhanced magneto-transport at high bias in quasi-magnetic tunnel junctions with EuS spin-filter barriers|T. Nagahama,T. S. Santos,J. S. Moodera###
(394720, 394721)
Enhanced magneto-transport at high bias in quasi-magnetic tunnel junctions with EuS spin-filter barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Enhanced magneto-transport at high bias in quasi-magnetic tunnel junctions with EuS spin-filter barriers|T. Nagahama,T. S. Santos,J. S. Moodera###
(394730, 394730)
 In quasi-magnetic tunnel junctions (QMTJs) with a EuS spin filter tunnelbarrier between Al and Co electrodes, we observed large magnetoresistance (MR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuS
###Enhanced magneto-transport at high bias in quasi-magnetic tunnel junctions with EuS spin-filter barriers|T. Nagahama,T. S. Santos,J. S. Moodera###
(394751, 394752)
 In quasi-magnetic tunnel junctions (QMTJs) with a EuS spin filter tunnelbarrier between Al and Co electrodes, we observed large magnetoresistance (MR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Al
###Enhanced magneto-transport at high bias in quasi-magnetic tunnel junctions with EuS spin-filter barriers|T. Nagahama,T. S. Santos,J. S. Moodera###
(394765, 394765)
 In quasi-magnetic tunnel junctions (QMTJs) with a EuS spin filter tunnelbarrier between Al and Co electrodes, we observed large magnetoresistance (MR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Enhanced magneto-transport at high bias in quasi-magnetic tunnel junctions with EuS spin-filter barriers|T. Nagahama,T. S. Santos,J. S. Moodera###
(394769, 394769)
 In quasi-magnetic tunnel junctions (QMTJs) with a EuS spin filter tunnelbarrier between Al and Co electrodes, we observed large magnetoresistance (MR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuS
###Enhanced magneto-transport at high bias in quasi-magnetic tunnel junctions with EuS spin-filter barriers|T. Nagahama,T. S. Santos,J. S. Moodera###
(394877, 394878)
 Thisbehavior can be understood as due to Fowler-Nordheim tunneling through thefully spin-polarized EuS conduction band.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Enhanced magneto-transport at high bias in quasi-magnetic tunnel junctions with EuS spin-filter barriers|T. Nagahama,T. S. Santos,J. S. Moodera###
(394887, 394887)
 The I-V characteristics and biasdependence of MR calculated using tunneling theory shows excellent agreementwith experiment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Enhanced magneto-transport at high bias in quasi-magnetic tunnel junctions with EuS spin-filter barriers|T. Nagahama,T. S. Santos,J. S. Moodera###
(394889, 394889)
 The I-V characteristics and biasdependence of MR calculated using tunneling theory shows excellent agreementwith experiment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Numerical analysis of the Novikov problem of a normal metal in a strong magnetic field|Roberto De Leo###
(395208, 395208)
 We present the results of our numerical exploration of the fractal structurefound by S.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 2, 'Fermi', 3]

P
###Numerical analysis of the Novikov problem of a normal metal in a strong magnetic field|Roberto De Leo###
(395210, 395210)
P.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 2, 'Fermi', 2]

Ni80Fe20
###Stray-fields-based magnetoresistance mechanism in Ni80Fe20-Nb-Ni80Fe20 trilayers|D. Stamopoulos,E. Manios,M. Pissas###
(395535, 395538)
Stray-fields-based magnetoresistance mechanism in Ni80Fe20-Nb-Ni80Fe20 trilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[201.0, 3, '%', 4]

Nb
###Stray-fields-based magnetoresistance mechanism in Ni80Fe20-Nb-Ni80Fe20 trilayers|D. Stamopoulos,E. Manios,M. Pissas###
(395540, 395540)
Stray-fields-based magnetoresistance mechanism in Ni80Fe20-Nb-Ni80Fe20 trilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[199.0, 3, '%', 4]

Ni80Fe20
###Stray-fields-based magnetoresistance mechanism in Ni80Fe20-Nb-Ni80Fe20 trilayers|D. Stamopoulos,E. Manios,M. Pissas###
(395542, 395545)
Stray-fields-based magnetoresistance mechanism in Ni80Fe20-Nb-Ni80Fe20 trilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[194.0, 3, '%', 4]

Ni80Fe20
###Stray-fields-based magnetoresistance mechanism in Ni80Fe20-Nb-Ni80Fe20 trilayers|D. Stamopoulos,E. Manios,M. Pissas###
(395589, 395592)
 We report on the transport and magnetic properties of hybrid trilayers andbilayers that consist of low spin-polarized Ni80Fe20 exhibiting in-plane but nouniaxial anisotropy and low-Tc Nb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 3, '%', 3]

Tc
###Stray-fields-based magnetoresistance mechanism in Ni80Fe20-Nb-Ni80Fe20 trilayers|D. Stamopoulos,E. Manios,M. Pissas###
(395613, 395613)
 We report on the transport and magnetic properties of hybrid trilayers andbilayers that consist of low spin-polarized Ni80Fe20 exhibiting in-plane but nouniaxial anisotropy and low-Tc Nb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 3, '%', 3]

Nb
###Stray-fields-based magnetoresistance mechanism in Ni80Fe20-Nb-Ni80Fe20 trilayers|D. Stamopoulos,E. Manios,M. Pissas###
(395615, 395615)
 We report on the transport and magnetic properties of hybrid trilayers andbilayers that consist of low spin-polarized Ni80Fe20 exhibiting in-plane but nouniaxial anisotropy and low-Tc Nb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 3, '%', 3]

In
###Stray-fields-based magnetoresistance mechanism in Ni80Fe20-Nb-Ni80Fe20 trilayers|D. Stamopoulos,E. Manios,M. Pissas###
(395636, 395636)
 In our trilayers the magnetoresistance exhibits an increase of twoorders of magnitude when the superconducting state is reached from theconventional normal-state values 0.6 % it goes up to 1000 % for temperaturesbelow Tc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 3, '%', 1]

Tc
###Stray-fields-based magnetoresistance mechanism in Ni80Fe20-Nb-Ni80Fe20 trilayers|D. Stamopoulos,E. Manios,M. Pissas###
(395711, 395711)
 In our trilayers the magnetoresistance exhibits an increase of twoorders of magnitude when the superconducting state is reached from theconventional normal-state values 0.6 % it goes up to 1000 % for temperaturesbelow Tc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 3, '%', 1]

In
###Stray-fields-based magnetoresistance mechanism in Ni80Fe20-Nb-Ni80Fe20 trilayers|D. Stamopoulos,E. Manios,M. Pissas###
(395714, 395714)
 In contrast, in the bilayers the effect is only minor since from 3%in the normal state increases only to 70 % for temperatures below Tc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 3, '%', 0]

Tc
###Stray-fields-based magnetoresistance mechanism in Ni80Fe20-Nb-Ni80Fe20 trilayers|D. Stamopoulos,E. Manios,M. Pissas###
(395767, 395767)
 In contrast, in the bilayers the effect is only minor since from 3%in the normal state increases only to 70 % for temperatures below Tc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 3, '%', 0]

Nb
###Stray-fields-based magnetoresistance mechanism in Ni80Fe20-Nb-Ni80Fe20 trilayers|D. Stamopoulos,E. Manios,M. Pissas###
(395823, 395823)
 Most importantly, we present data not only for the normal stateof Nb but also in its superconducting state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 3, '%', 2]

Tc
###Stray-fields-based magnetoresistance mechanism in Ni80Fe20-Nb-Ni80Fe20 trilayers|D. Stamopoulos,E. Manios,M. Pissas###
(395854, 395854)
 Strikingly, these data show thatbelow its Tc SC the Nb interlayer under the influence of the outer Ni80Fe20layers attains a magnetization component transverse to the external field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 3, '%', 3]

SC
###Stray-fields-based magnetoresistance mechanism in Ni80Fe20-Nb-Ni80Fe20 trilayers|D. Stamopoulos,E. Manios,M. Pissas###
(395856, 395857)
 Strikingly, these data show thatbelow its Tc SC the Nb interlayer under the influence of the outer Ni80Fe20layers attains a magnetization component transverse to the external field.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 3, '%', 3]

Nb
###Stray-fields-based magnetoresistance mechanism in Ni80Fe20-Nb-Ni80Fe20 trilayers|D. Stamopoulos,E. Manios,M. Pissas###
(395861, 395861)
 Strikingly, these data show thatbelow its Tc SC the Nb interlayer under the influence of the outer Ni80Fe20layers attains a magnetization component transverse to the external field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 3, '%', 3]

Ni80Fe20
###Stray-fields-based magnetoresistance mechanism in Ni80Fe20-Nb-Ni80Fe20 trilayers|D. Stamopoulos,E. Manios,M. Pissas###
(395877, 395880)
 Strikingly, these data show thatbelow its Tc SC the Nb interlayer under the influence of the outer Ni80Fe20layers attains a magnetization component transverse to the external field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 3, '%', 3]

Ni80Fe20
###Stray-fields-based magnetoresistance mechanism in Ni80Fe20-Nb-Ni80Fe20 trilayers|D. Stamopoulos,E. Manios,M. Pissas###
(395966, 395969)
 Adequate magnetostatic coupling of the outer Ni80Fe20 layers ismotivated by stray fields that emerge naturally in their whole surface due tothe multidomain magnetic structure that they attain near coercivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[227.0, 3, '%', 5]

Ni80Fe20
###Stray-fields-based magnetoresistance mechanism in Ni80Fe20-Nb-Ni80Fe20 trilayers|D. Stamopoulos,E. Manios,M. Pissas###
(396100, 396103)
 Referring tothe bilayers, although out-of-plane rotation of the magnetization of the singleNi80Fe20 layer is still observed, in these structures magnetostatic couplingdoes not occur due to the absence of a second Ni80Fe20 one so that the observedmagnetoresistance peaks are only modest.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[361.0, 3, '%', 7]

Ni80Fe20
###Stray-fields-based magnetoresistance mechanism in Ni80Fe20-Nb-Ni80Fe20 trilayers|D. Stamopoulos,E. Manios,M. Pissas###
(396145, 396148)
 Referring tothe bilayers, although out-of-plane rotation of the magnetization of the singleNi80Fe20 layer is still observed, in these structures magnetostatic couplingdoes not occur due to the absence of a second Ni80Fe20 one so that the observedmagnetoresistance peaks are only modest.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[406.0, 3, '%', 7]

Ni/InAs/Ni
###Electric-field control of tunneling magnetoresistance effect in a Ni/InAs/Ni quantum-dot spin valve|K. Hamaya,M. Kitabatake,K. Shibata,M. Jung,M. Kawamura,K. Hirakawa,T. Machida,S. Ishida,Y. Arakawa###
(396398, 396403)
Electric-field control of tunneling magnetoresistance effect in a Ni/InAs/Ni quantum-dot spin valve.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Ni
###Electric-field control of tunneling magnetoresistance effect in a Ni/InAs/Ni quantum-dot spin valve|K. Hamaya,M. Kitabatake,K. Shibata,M. Jung,M. Kawamura,K. Hirakawa,T. Machida,S. Ishida,Y. Arakawa###
(396470, 396470)
 By usingferromagnetic Ni nano-gap electrodes, we observe the Coulomb blockadeoscillations at a small bias voltage.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Electric-field control of tunneling magnetoresistance effect in a Ni/InAs/Ni quantum-dot spin valve|K. Hamaya,M. Kitabatake,K. Shibata,M. Jung,M. Kawamura,K. Hirakawa,T. Machida,S. Ishida,Y. Arakawa###
(396503, 396503)
 In the vicinity of the Coulomb blockadepeak, the TMR effect is significantly modulated and even its sign is switchedby changing the gate voltage, where the sign of the TMR value changes at theresonant condition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Random resistor network model of minimal conductivity in graphene|V. V. Cheianov,V. I. Falko,B. L. Altshuler,I. L. Aleiner###
(396645, 396645)
 Transport in undoped graphene is related to percolating current patterns inthe networks of em N- and em P-type regions reflecting the strong bipolarcharge density fluctuations.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Random resistor network model of minimal conductivity in graphene|V. V. Cheianov,V. I. Falko,B. L. Altshuler,I. L. Aleiner###
(396652, 396652)
 Transport in undoped graphene is related to percolating current patterns inthe networks of em N- and em P-type regions reflecting the strong bipolarcharge density fluctuations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Random resistor network model of minimal conductivity in graphene|V. V. Cheianov,V. I. Falko,B. L. Altshuler,I. L. Aleiner###
(396682, 396682)
 Transmissions of the em P-N junctions, thoughsmall, are vital in establishing the macroscopic conductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Random resistor network model of minimal conductivity in graphene|V. V. Cheianov,V. I. Falko,B. L. Altshuler,I. L. Aleiner###
(396684, 396684)
 Transmissions of the em P-N junctions, thoughsmall, are vital in establishing the macroscopic conductivity.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Theory of the fractional microwave-induced resistance oscillations|I. A. Dmitriev,A. D. Mirlin,D. G. Polyakov###
(396912, 396912)
 At moderatemagnetic field, a single-photon mechanism originating from themicrowave-induced sidebands in the density of states of disorder-broadenedLandau levels becomes important.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 2, 'D', 2]

Tl2Ba2CuO6
###Correlation between $T_c$ and anisotropic scattering in Tl$_2$Ba$_2$CuO$_{6+δ}$|M. Abdel-Jawad,J. G. Analytis,L. Balicas,A. Carrington,J. P. H. Charmant,M. M. J. French,N. E. Hussey###
(397164, 397170)
Correlation between Tc and anisotropic scattering in Tl2Ba2CuO6.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5454545454545454,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.09090909090909091,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 15, 'K', 1],[72.0, 35, 'K', 1]

Tl2Ba2CuO6
###Correlation between $T_c$ and anisotropic scattering in Tl$_2$Ba$_2$CuO$_{6+δ}$|M. Abdel-Jawad,J. G. Analytis,L. Balicas,A. Carrington,J. P. H. Charmant,M. M. J. French,N. E. Hussey###
(397215, 397221)
 Angle-dependent magnetoresistance measurements are used to determine theisotropic and anisotropic components of the transport scattering rate inoverdoped Tl2Ba2CuO6delta for a range of Tc values between 15Kand 35K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5454545454545454,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.09090909090909091,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 15, 'K', 0],[21.0, 35, 'K', 0]

N
###Detection of nuclear magnetic resonance with an anisotropic magnetoresistive sensor|F. Verpillat,M. P. Ledbetter,D. Budker,S. Xu,D. Michalak,C. Hilty,S. Antonijevic,A. Pines,L. -S. Bouchard###
(397737, 397737)
 We report detection of nuclear magnetic resonance (NMR) using an anisotropicmagnetoresistive (AMR) sensor.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Detection of nuclear magnetic resonance with an anisotropic magnetoresistive sensor|F. Verpillat,M. P. Ledbetter,D. Budker,S. Xu,D. Michalak,C. Hilty,S. Antonijevic,A. Pines,L. -S. Bouchard###
(397805, 397805)
 A remote-detection arrangement was used, inwhich protons in flowing water were pre-polarized in the field of asuperconducting NMR magnet, adiabatically inverted, and subsequently detectedwith an AMR sensor situated downstream from the magnet and the adiabaticinverter.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Detection of nuclear magnetic resonance with an anisotropic magnetoresistive sensor|F. Verpillat,M. P. Ledbetter,D. Budker,S. Xu,D. Michalak,C. Hilty,S. Antonijevic,A. Pines,L. -S. Bouchard###
(397868, 397868)
 AMR sensing is well suited for NMR detection in microfluidiclab-on-a-chip applications.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Plasmon phenomena as origin of DC-current induced resistivity oscillations in two-dimensional electron systems|Jesus Inarrea###
(397909, 397909)
Plasmon phenomena as origin of D<missing VAR>C-current induced resistivity oscillations in two-dimensional electron systems.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Plasmon phenomena as origin of DC-current induced resistivity oscillations in two-dimensional electron systems|Jesus Inarrea###
(397977, 397977)
 In the model presented here we suggest that a plasma wave isexcited in the system producing an oscillating motion of the wholetwo-dimensional electron gas at the plasma frequency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe1-x
###Anisotropy in magnetic and transport properties of Fe1-xCoxSb2|Rongwei Hu,V. F. Mitrovic,C. Petrovic###
(398129, 398132)
Anisotropy in magnetic and transport properties of Fe1-xCoxSb2.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[44.0, 0, '<', 1]

Sb2
###Anisotropy in magnetic and transport properties of Fe1-xCoxSb2|Rongwei Hu,V. F. Mitrovic,C. Petrovic###
(398134, 398135)
Anisotropy in magnetic and transport properties of Fe1-xCoxSb2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 0, '<', 1]

Fe1-x
###Anisotropy in magnetic and transport properties of Fe1-xCoxSb2|Rongwei Hu,V. F. Mitrovic,C. Petrovic###
(398167, 398170)
 Anisotropic magnetic and electronic transport measurements were carried outon large single crystals of Fe1-xCoxSb2 (0< x<missing VAR> <1).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[6.0, 0, '<', 0]

Sb2
###Anisotropy in magnetic and transport properties of Fe1-xCoxSb2|Rongwei Hu,V. F. Mitrovic,C. Petrovic###
(398172, 398173)
 Anisotropic magnetic and electronic transport measurements were carried outon large single crystals of Fe1-xCoxSb2 (0< x<missing VAR> <1).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 0, '<', 0]

FeSb2
###Anisotropy in magnetic and transport properties of Fe1-xCoxSb2|Rongwei Hu,V. F. Mitrovic,C. Petrovic###
(398195, 398197)
 The semiconducting stateof FeSb2 evolves into metallic and weakly ferromagnetic by substitution of Fewith Co for x<missing VAR><0.5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 0, '<', 1]

Fe
###Anisotropy in magnetic and transport properties of Fe1-xCoxSb2|Rongwei Hu,V. F. Mitrovic,C. Petrovic###
(398217, 398217)
 The semiconducting stateof FeSb2 evolves into metallic and weakly ferromagnetic by substitution of Fewith Co for x<missing VAR><0.5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 0, '<', 1]

Co
###Anisotropy in magnetic and transport properties of Fe1-xCoxSb2|Rongwei Hu,V. F. Mitrovic,C. Petrovic###
(398222, 398222)
 The semiconducting stateof FeSb2 evolves into metallic and weakly ferromagnetic by substitution of Fewith Co for x<missing VAR><0.5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 0, '<', 1]

FeSb2
###Anisotropy in magnetic and transport properties of Fe1-xCoxSb2|Rongwei Hu,V. F. Mitrovic,C. Petrovic###
(398252, 398254)
 Further doping induces structural transformation fromorthorhombic Pnnm structure of FeSb2 to monoclinic P21/c<missing VAR> structure of CoSb2where semiconducting and diamagnetic ground state is restored again.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 0, '<', 2]

P21
###Anisotropy in magnetic and transport properties of Fe1-xCoxSb2|Rongwei Hu,V. F. Mitrovic,C. Petrovic###
(398260, 398261)
 Further doping induces structural transformation fromorthorhombic Pnnm structure of FeSb2 to monoclinic P21/c<missing VAR> structure of CoSb2where semiconducting and diamagnetic ground state is restored again.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 0, '<', 2]

CoSb2
###Anisotropy in magnetic and transport properties of Fe1-xCoxSb2|Rongwei Hu,V. F. Mitrovic,C. Petrovic###
(398269, 398271)
 Further doping induces structural transformation fromorthorhombic Pnnm structure of FeSb2 to monoclinic P21/c<missing VAR> structure of CoSb2where semiconducting and diamagnetic ground state is restored again.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 0, '<', 2]

Co/Al
###Tunneling Anisotropic Magnetoresistance in Co/AlOx/Au Tunnel Junctions|R. S. Liu,L. Michalak,C. M. Canali,L. Samuelson,H. Pettersson###
(398329, 398331)
Tunneling Anisotropic Magnetoresistance in Co/AlOx/Au Tunnel Junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Au
###Tunneling Anisotropic Magnetoresistance in Co/AlOx/Au Tunnel Junctions|R. S. Liu,L. Michalak,C. M. Canali,L. Samuelson,H. Pettersson###
(398334, 398334)
Tunneling Anisotropic Magnetoresistance in Co/AlOx/Au Tunnel Junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co/Al
###Tunneling Anisotropic Magnetoresistance in Co/AlOx/Au Tunnel Junctions|R. S. Liu,L. Michalak,C. M. Canali,L. Samuelson,H. Pettersson###
(398364, 398366)
 We observe spin-valve-like effects in nano-scaled thermally evaporatedCo/AlOx/Au tunnel junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Au
###Tunneling Anisotropic Magnetoresistance in Co/AlOx/Au Tunnel Junctions|R. S. Liu,L. Michalak,C. M. Canali,L. Samuelson,H. Pettersson###
(398369, 398369)
 We observe spin-valve-like effects in nano-scaled thermally evaporatedCo/AlOx/Au tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Tunneling Anisotropic Magnetoresistance in Co/AlOx/Au Tunnel Junctions|R. S. Liu,L. Michalak,C. M. Canali,L. Samuelson,H. Pettersson###
(398411, 398411)
 The tunneling magnetoresistance is anisotropic anddepends on the relative orientation of the magnetization direction of the Coelectrode with respect to the current direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pr
###Limited local electron-lattice coupling in manganites|D. Sanchez,M. J. Calderon,J. Sanchez-Benitez,A. J. Williams,J. P. Attfield,P. A. Midgley,N. D. Mathur###
(398537, 398537)
 (Pr,Ca)MnO3 is the archetypal charge-ordered manganite, but inPr0.48Ca0.52MnO3 we find (using convergent-beam electron diffraction anddark-field images) that the superlattice period is locally incommensurate withrespect to the parent lattice, and that the superlattice orientation possessessignificant local variations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ca
###Limited local electron-lattice coupling in manganites|D. Sanchez,M. J. Calderon,J. Sanchez-Benitez,A. J. Williams,J. P. Attfield,P. A. Midgley,N. D. Mathur###
(398539, 398539)
 (Pr,Ca)MnO3 is the archetypal charge-ordered manganite, but inPr0.48Ca0.52MnO3 we find (using convergent-beam electron diffraction anddark-field images) that the superlattice period is locally incommensurate withrespect to the parent lattice, and that the superlattice orientation possessessignificant local variations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnO3
###Limited local electron-lattice coupling in manganites|D. Sanchez,M. J. Calderon,J. Sanchez-Benitez,A. J. Williams,J. P. Attfield,P. A. Midgley,N. D. Mathur###
(398541, 398543)
 (Pr,Ca)MnO3 is the archetypal charge-ordered manganite, but inPr0.48Ca0.52MnO3 we find (using convergent-beam electron diffraction anddark-field images) that the superlattice period is locally incommensurate withrespect to the parent lattice, and that the superlattice orientation possessessignificant local variations.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pr0.48Ca0.52MnO3
###Limited local electron-lattice coupling in manganites|D. Sanchez,M. J. Calderon,J. Sanchez-Benitez,A. J. Williams,J. P. Attfield,P. A. Midgley,N. D. Mathur###
(398563, 398569)
 (Pr,Ca)MnO3 is the archetypal charge-ordered manganite, but inPr0.48Ca0.52MnO3 we find (using convergent-beam electron diffraction anddark-field images) that the superlattice period is locally incommensurate withrespect to the parent lattice, and that the superlattice orientation possessessignificant local variations.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.10400000000000001,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.096,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Probing Landau quantisation with the presence of insulator-quantum Hall transition in a GaAs two-dimensional electron system|Kuang Yao Chen,Y. H. Chang,C. -T. Liang,N. Aoki,Y. Ochiai,C. F. Huang,Li-Hung Lin,K. A. Cheng,H. H. Cheng,H. H. Lin,Jau-Yang Wu,Sheng-Di Lin###
(398739, 398740)
Probing Landau quantisation with the presence of insulator-quantum Hall transition in a GaAs two-dimensional electron system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 2, 'DES', 2]

S
###Probing Landau quantisation with the presence of insulator-quantum Hall transition in a GaAs two-dimensional electron system|Kuang Yao Chen,Y. H. Chang,C. -T. Liang,N. Aoki,Y. Ochiai,C. F. Huang,Li-Hung Lin,K. A. Cheng,H. H. Cheng,H. H. Lin,Jau-Yang Wu,Sheng-Di Lin###
(398778, 398778)
 Magneto-transport measurements are performed on the two-dimensional electronsystem (2DES) in an AlGaAs/GaAs heterostructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 2, 'DES', 1]

AlGaAs/GaAs
###Probing Landau quantisation with the presence of insulator-quantum Hall transition in a GaAs two-dimensional electron system|Kuang Yao Chen,Y. H. Chang,C. -T. Liang,N. Aoki,Y. Ochiai,C. F. Huang,Li-Hung Lin,K. A. Cheng,H. H. Cheng,H. H. Lin,Jau-Yang Wu,Sheng-Di Lin###
(398785, 398790)
 Magneto-transport measurements are performed on the two-dimensional electronsystem (2DES) in an AlGaAs/GaAs heterostructure.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[21.0, 2, 'DES', 1]

I
###Probing Landau quantisation with the presence of insulator-quantum Hall transition in a GaAs two-dimensional electron system|Kuang Yao Chen,Y. H. Chang,C. -T. Liang,N. Aoki,Y. Ochiai,C. F. Huang,Li-Hung Lin,K. A. Cheng,H. H. Cheng,H. H. Lin,Jau-Yang Wu,Sheng-Di Lin###
(398849, 398849)
 By increasing the magneticfield perpendicular to the 2DES, magnetoresistivity oscillations due to Landauquantisation can be identified just near the direct insulator-quantum Hall(I-Q<missing VAR>H) transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 2, 'DES', 0]

H
###Probing Landau quantisation with the presence of insulator-quantum Hall transition in a GaAs two-dimensional electron system|Kuang Yao Chen,Y. H. Chang,C. -T. Liang,N. Aoki,Y. Ochiai,C. F. Huang,Li-Hung Lin,K. A. Cheng,H. H. Cheng,H. H. Lin,Jau-Yang Wu,Sheng-Di Lin###
(398852, 398852)
 By increasing the magneticfield perpendicular to the 2DES, magnetoresistivity oscillations due to Landauquantisation can be identified just near the direct insulator-quantum Hall(I-Q<missing VAR>H) transition.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 2, 'DES', 0]

I
###Probing Landau quantisation with the presence of insulator-quantum Hall transition in a GaAs two-dimensional electron system|Kuang Yao Chen,Y. H. Chang,C. -T. Liang,N. Aoki,Y. Ochiai,C. F. Huang,Li-Hung Lin,K. A. Cheng,H. H. Cheng,H. H. Lin,Jau-Yang Wu,Sheng-Di Lin###
(398895, 398895)
 Our study shows that the direct I-Q<missing VAR>Htransition does not always correspond to the onset of strong localisation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 2, 'DES', 2]

H
###Probing Landau quantisation with the presence of insulator-quantum Hall transition in a GaAs two-dimensional electron system|Kuang Yao Chen,Y. H. Chang,C. -T. Liang,N. Aoki,Y. Ochiai,C. F. Huang,Li-Hung Lin,K. A. Cheng,H. H. Cheng,H. H. Lin,Jau-Yang Wu,Sheng-Di Lin###
(398898, 398898)
 Our study shows that the direct I-Q<missing VAR>Htransition does not always correspond to the onset of strong localisation.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 2, 'DES', 2]

GdI2
###GdI_2: A New Ferromagnetic Excitonic Solid?|A. Taraphder,M. S. Laad,L. Craco,A. N. Yaresko###
(399512, 399514)
GdI2 A New Ferromagnetic Excitonic Solid?
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GdI2
###GdI_2: A New Ferromagnetic Excitonic Solid?|A. Taraphder,M. S. Laad,L. Craco,A. N. Yaresko###
(399541, 399543)
 The two-dimensional, colossal magnetoresistive system GdI2 develops anunusual metallic state below its ferromagnetic transition and becomesinsulating at low temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GdONiBi
###Superconductivity in nickel-based compound GdONiBi and hole doped Gd0.9Sr0.1ONiBi|Junyi Ge,Shixun Cao,Jincang Zhang###
(399722, 399725)
Superconductivity in nickel-based compound GdONiBi and hole doped Gd0.9Sr0.1ONiBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 4.5, 'K', 1],[103.0, 4.7, 'K', 2]

Gd0.9Sr0.1ONiBi
###Superconductivity in nickel-based compound GdONiBi and hole doped Gd0.9Sr0.1ONiBi|Junyi Ge,Shixun Cao,Jincang Zhang###
(399733, 399739)
Superconductivity in nickel-based compound GdONiBi and hole doped Gd0.9Sr0.1ONiBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.025,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.225,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 4.5, 'K', 1],[89.0, 4.7, 'K', 2]

GdONiBi
###Superconductivity in nickel-based compound GdONiBi and hole doped Gd0.9Sr0.1ONiBi|Junyi Ge,Shixun Cao,Jincang Zhang###
(399756, 399759)
 We successfully synthesized the nickel-based compound GdONiBi withsuperconducting transition temperature about 4.5 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 4.5, 'K', 0],[69.0, 4.7, 'K', 1]

Gd
###Superconductivity in nickel-based compound GdONiBi and hole doped Gd0.9Sr0.1ONiBi|Junyi Ge,Shixun Cao,Jincang Zhang###
(399785, 399785)
 By partially substitutingthe element Gd with Sr to introduce holes into the material, we got newsuperconductor Gd0.9Sr0.1ONiBi with critical temperature about 4.7 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 4.5, 'K', 1],[43.0, 4.7, 'K', 0]

Sr
###Superconductivity in nickel-based compound GdONiBi and hole doped Gd0.9Sr0.1ONiBi|Junyi Ge,Shixun Cao,Jincang Zhang###
(399789, 399789)
 By partially substitutingthe element Gd with Sr to introduce holes into the material, we got newsuperconductor Gd0.9Sr0.1ONiBi with critical temperature about 4.7 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 4.5, 'K', 1],[39.0, 4.7, 'K', 0]

Gd0.9Sr0.1ONiBi
###Superconductivity in nickel-based compound GdONiBi and hole doped Gd0.9Sr0.1ONiBi|Junyi Ge,Shixun Cao,Jincang Zhang###
(399813, 399819)
 By partially substitutingthe element Gd with Sr to introduce holes into the material, we got newsuperconductor Gd0.9Sr0.1ONiBi with critical temperature about 4.7 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.025,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.225,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 4.5, 'K', 1],[9.0, 4.7, 'K', 0]

In
###Adsorbate-limited conductivity of graphene|John P. Robinson,Henning Schomerus,Laszlo Oroszlany,Vladimir I. Fal'ko###
(400183, 400183)
 In the region of strong scattering, renormalization groupcorrections drive the system further towards insulating behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaFePO
###Bulk superconductivity and disorder in single crystals of LaFePO|James G. Analytis,Jiun-Haw Chu,Ann S. Erickson,Chris Kucharczyk,Alessandro Serafin,Antony Carrington,Catherine Cox,Susan M. Kauzlarich,Hakon Hope,I. R. Fisher###
(400276, 400279)
Bulk superconductivity and disorder in single crystals of LaFePO.
Featurization terminated normally.
0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaFePO
###Bulk superconductivity and disorder in single crystals of LaFePO|James G. Analytis,Jiun-Haw Chu,Ann S. Erickson,Chris Kucharczyk,Alessandro Serafin,Antony Carrington,Catherine Cox,Susan M. Kauzlarich,Hakon Hope,I. R. Fisher###
(400307, 400310)
 We have studied the intrinsic normal and superconducting properties of theoxypnictide LaFePO.
Featurization terminated normally.
0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaFePO
###Bulk superconductivity and disorder in single crystals of LaFePO|James G. Analytis,Jiun-Haw Chu,Ann S. Erickson,Chris Kucharczyk,Alessandro Serafin,Antony Carrington,Catherine Cox,Susan M. Kauzlarich,Hakon Hope,I. R. Fisher###
(400336, 400339)
 These samples exhibit bulk superconductivity and theevidence suggests that stoichiometric LaFePO is indeed superconducting, incontrast to other reports.
Featurization terminated normally.
0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaFePO
###Bulk superconductivity and disorder in single crystals of LaFePO|James G. Analytis,Jiun-Haw Chu,Ann S. Erickson,Chris Kucharczyk,Alessandro Serafin,Antony Carrington,Catherine Cox,Susan M. Kauzlarich,Hakon Hope,I. R. Fisher###
(400442, 400445)
 Finally we find that,unlike Tc, other properties in single-crystal LaFePO including theresistivity and magnetoresistance, can be very sensitive to disorder.
Featurization terminated normally.
0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs/AlGaAs
###Slow relaxation of magnetoresistance in doped p -GaAs/AlGaAs layers with partially filled upper Hubbard band|N. V. Agrinskaya,V. I. Kozub,D. V. Shamshur,A. Shumilin###
(400495, 400500)
Slow relaxation of magnetoresistance in doped p<missing VAR> -GaAs/AlGaAs layers with partially filled upper Hubbard band.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

GaAs
###Slow relaxation of magnetoresistance in doped p -GaAs/AlGaAs layers with partially filled upper Hubbard band|N. V. Agrinskaya,V. I. Kozub,D. V. Shamshur,A. Shumilin###
(400538, 400539)
 We observed slow relaxation of magnetoresistance in quantum well structuresGaAs-AlGaAs with a selective doping of both wells and barrier regions whichallowed partial filling of the upper Hubbard band.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

AlGaAs
###Slow relaxation of magnetoresistance in doped p -GaAs/AlGaAs layers with partially filled upper Hubbard band|N. V. Agrinskaya,V. I. Kozub,D. V. Shamshur,A. Shumilin###
(400541, 400543)
 We observed slow relaxation of magnetoresistance in quantum well structuresGaAs-AlGaAs with a selective doping of both wells and barrier regions whichallowed partial filling of the upper Hubbard band.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(CCP)
###Current-perpendicular-to-plane magnetoresistance of a domain wall confined in a nano-oxide-layer|Jun Sato,Katsuyoshi Matsushita,Hiroshi Imamura###
(400960, 400964)
 We theoretically study the current-perpendicular-to-plane magnetoresistanceof a domain wall confined in a current-confined-path (CCP) structure made of anano-oxide-layer (NOL).
Featurization successful!
0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NO
###Current-perpendicular-to-plane magnetoresistance of a domain wall confined in a nano-oxide-layer|Jun Sato,Katsuyoshi Matsushita,Hiroshi Imamura###
(400982, 400983)
 We theoretically study the current-perpendicular-to-plane magnetoresistanceof a domain wall confined in a current-confined-path (CCP) structure made of anano-oxide-layer (NOL).
Featurization terminated normally.
0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Current-perpendicular-to-plane magnetoresistance of a domain wall confined in a nano-oxide-layer|Jun Sato,Katsuyoshi Matsushita,Hiroshi Imamura###
(400988, 400988)
 In order to calculate the MR ratio of the system, thecontinuity equations for charge and spin currents are numerically solved withthe three-dimensional CCP geometry by use of finite element method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CCP
###Current-perpendicular-to-plane magnetoresistance of a domain wall confined in a nano-oxide-layer|Jun Sato,Katsuyoshi Matsushita,Hiroshi Imamura###
(401042, 401044)
 In order to calculate the MR ratio of the system, thecontinuity equations for charge and spin currents are numerically solved withthe three-dimensional CCP geometry by use of finite element method.
Featurization terminated normally.
0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CCP
###Current-perpendicular-to-plane magnetoresistance of a domain wall confined in a nano-oxide-layer|Jun Sato,Katsuyoshi Matsushita,Hiroshi Imamura###
(401085, 401087)
 It isconfirmed that the MR ratio is enhanced by the CCP structure, which isconsistent with the experimental results.
Featurization terminated normally.
0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Spin susceptibility and polarization field in a dilute two-dimensional electron system in (111) silicon|A. A. Kapustin,A. A. Shashkin,V. T. Dolgopolov,M. Goiran,H. Rakoto*,Z. D. Kvon###
(401162, 401162)
 We find that the polarization field, Bchi, obtained by scaling theweak-parallel-field magnetoresistance at different electron densities in adilute two-dimensional electron system in (111) silicon, corresponds to thespin susceptibility that grows strongly at low densities.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Spin susceptibility and polarization field in a dilute two-dimensional electron system in (111) silicon|A. A. Kapustin,A. A. Shashkin,V. T. Dolgopolov,M. Goiran,H. Rakoto*,Z. D. Kvon###
(401247, 401247)
 The polarizationfield, Bsat, determined by resistance saturation, turns out to deviate tolower values than Bchi with increasing electron density, which can beexplained by filling of the upper electron subbands in the fully spin-polarizedregime.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Spin susceptibility and polarization field in a dilute two-dimensional electron system in (111) silicon|A. A. Kapustin,A. A. Shashkin,V. T. Dolgopolov,M. Goiran,H. Rakoto*,Z. D. Kvon###
(401277, 401277)
 The polarizationfield, Bsat, determined by resistance saturation, turns out to deviate tolower values than Bchi with increasing electron density, which can beexplained by filling of the upper electron subbands in the fully spin-polarizedregime.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3LaAlO3
###Anisotropic magneto-transport effects at SrTiO3\LaAlO3 interfaces|M. Ben Shalom,C. W. Tai,Y. Lereah,M. Sachs,E. Levy,D. Rakhmilevitch,A. Palevski,Y. Dagan###
(401344, 401351)
Anisotropic magneto-transport effects at SrTiO3LaAlO3 interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 130, 'mK', 2],[124.0, 35, 'K', 3]

SrTiO3LaAlO3
###Anisotropic magneto-transport effects at SrTiO3\LaAlO3 interfaces|M. Ben Shalom,C. W. Tai,Y. Lereah,M. Sachs,E. Levy,D. Rakhmilevitch,A. Palevski,Y. Dagan###
(401388, 401395)
 The resistivity as a function of temperature, magnetic field and itsorientation for atomically flat SrTiO3LaAlO3 interfaces with carrier densitiesof 31013 cm-2 is reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 130, 'mK', 1],[80.0, 35, 'K', 2]

At
###Anisotropic magneto-transport effects at SrTiO3\LaAlO3 interfaces|M. Ben Shalom,C. W. Tai,Y. Lereah,M. Sachs,E. Levy,D. Rakhmilevitch,A. Palevski,Y. Dagan###
(401421, 401421)
 At low magnetic fields superconductivity isobserved below 130mK.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 130, 'mK', 0],[54.0, 35, 'K', 1]

LaAlO3
###Thickness dependence of the mobility at the LaAlO_3 / SrTiO_3 interface|C. Bell,S. Harashima,Y. Hikita,H. Y. Hwang###
(401528, 401531)
Thickness dependence of the mobility at the LaAlO3 / SrTiO3 interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 25, 'unit', 3]

SrTiO3
###Thickness dependence of the mobility at the LaAlO_3 / SrTiO_3 interface|C. Bell,S. Harashima,Y. Hikita,H. Y. Hwang###
(401535, 401538)
Thickness dependence of the mobility at the LaAlO3 / SrTiO3 interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 25, 'unit', 3]

LaAlO3
###Thickness dependence of the mobility at the LaAlO_3 / SrTiO_3 interface|C. Bell,S. Harashima,Y. Hikita,H. Y. Hwang###
(401559, 401562)
 The electronic transport properties of a series of LaAlO3 / SrTiO3interfaces were investigated, and a systematic thickness dependence of thesheet resistance and magnetoresistance was found for constant growthconditions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 25, 'unit', 2]

SrTiO3
###Thickness dependence of the mobility at the LaAlO_3 / SrTiO_3 interface|C. Bell,S. Harashima,Y. Hikita,H. Y. Hwang###
(401566, 401569)
 The electronic transport properties of a series of LaAlO3 / SrTiO3interfaces were investigated, and a systematic thickness dependence of thesheet resistance and magnetoresistance was found for constant growthconditions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 25, 'unit', 2]

LaAlO3
###Thickness dependence of the mobility at the LaAlO_3 / SrTiO_3 interface|C. Bell,S. Harashima,Y. Hikita,H. Y. Hwang###
(401646, 401649)
 This trend occurs above the critical thickness of four unit cells,below which the LaAlO3 / SrTiO3 interface is not conducting.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 25, 'unit', 1]

SrTiO3
###Thickness dependence of the mobility at the LaAlO_3 / SrTiO_3 interface|C. Bell,S. Harashima,Y. Hikita,H. Y. Hwang###
(401653, 401656)
 This trend occurs above the critical thickness of four unit cells,below which the LaAlO3 / SrTiO3 interface is not conducting.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 25, 'unit', 1]

LaAlO3
###Thickness dependence of the mobility at the LaAlO_3 / SrTiO_3 interface|C. Bell,S. Harashima,Y. Hikita,H. Y. Hwang###
(401707, 401710)
 A dramaticdecrease in mobility of the electron gas of nearly two orders of magnitude wasobserved with increasing LaAlO3 thickness from five to 25 unit cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 25, 'unit', 0]

(Ni81Fe19)
###Characterisation of Ferromagnetic Contacts to Carbon Nanotubes|D. Preusche,S. Schmidmeier,E. Pallecchi,Ch. Dietrich,A. K. Huettel,J. Zweck,Ch. Strunk###
(401819, 401824)
 Various electrode shapes madefrom permalloy (Ni81Fe19), the diluted ferromagnet PdFe, and PdFe/Febilayers are studied for both their micromagnetic properties and their contactformation to carbon nanotubes.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.19,0,0.81,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PdFe
###Characterisation of Ferromagnetic Contacts to Carbon Nanotubes|D. Preusche,S. Schmidmeier,E. Pallecchi,Ch. Dietrich,A. K. Huettel,J. Zweck,Ch. Strunk###
(401833, 401834)
 Various electrode shapes madefrom permalloy (Ni81Fe19), the diluted ferromagnet PdFe, and PdFe/Febilayers are studied for both their micromagnetic properties and their contactformation to carbon nanotubes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PdFe/Fe
###Characterisation of Ferromagnetic Contacts to Carbon Nanotubes|D. Preusche,S. Schmidmeier,E. Pallecchi,Ch. Dietrich,A. K. Huettel,J. Zweck,Ch. Strunk###
(401839, 401842)
 Various electrode shapes madefrom permalloy (Ni81Fe19), the diluted ferromagnet PdFe, and PdFe/Febilayers are studied for both their micromagnetic properties and their contactformation to carbon nanotubes.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

C
###New Correlated Model of Colossal Magnetoresistive Manganese Oxides|D. I. Golosov###
(402369, 402369)
 A new minimal model is constructed for the doped manganese oxides whichexhibit colossal magnetoresistance (CMR), involving broad spin-majorityconduction band as well as nearly localised spin-minority electron states.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Au
###Geometrical and orbital effects in a quasi-one dimensional conductor|D. Graf,J. S. Brooks,E. S. Choi,M. Almeida,R. T. Henriques,J. C. Dias,S. Uji###
(402550, 402550)
 The angular dependent magnetoresistance of (Per)2[Au(mnt)2] under pressurehas revealed geometrical effects associated with the crystallographicparameters.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Au
###Geometrical and orbital effects in a quasi-one dimensional conductor|D. Graf,J. S. Brooks,E. S. Choi,M. Almeida,R. T. Henriques,J. C. Dias,S. Uji###
(402681, 402681)
 We comparethe results from (Per)2[Au(mnt)2] with previous studies of the well-knownBechgaard salts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Role of anion size, magnetic moment, and disorder on the properties of the organic conductor kappa-(BETS)_2Ga_{1-x}Fe_{x}Cl_{4-y}_Br_{y}|E. Steven,H. B. Cui,A. Kismarahardja,J. S. Brooks,D. Graf,H. Kobayashi###
(402751, 402751)
Role of anion size, magnetic moment, and disorder on the properties of the organic conductor kappa-(BETS)2Ga1-xFex<missing VAR>Cl4-yBry<missing VAR>.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Role of anion size, magnetic moment, and disorder on the properties of the organic conductor kappa-(BETS)_2Ga_{1-x}Fe_{x}Cl_{4-y}_Br_{y}|E. Steven,H. B. Cui,A. Kismarahardja,J. S. Brooks,D. Graf,H. Kobayashi###
(402754, 402754)
Role of anion size, magnetic moment, and disorder on the properties of the organic conductor kappa-(BETS)2Ga1-xFex<missing VAR>Cl4-yBry<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga1-xFe
###Role of anion size, magnetic moment, and disorder on the properties of the organic conductor kappa-(BETS)_2Ga_{1-x}Fe_{x}Cl_{4-y}_Br_{y}|E. Steven,H. B. Cui,A. Kismarahardja,J. S. Brooks,D. Graf,H. Kobayashi###
(402757, 402761)
Role of anion size, magnetic moment, and disorder on the properties of the organic conductor kappa-(BETS)2Ga1-xFex<missing VAR>Cl4-yBry<missing VAR>.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

Cl4-yBr
###Role of anion size, magnetic moment, and disorder on the properties of the organic conductor kappa-(BETS)_2Ga_{1-x}Fe_{x}Cl_{4-y}_Br_{y}|E. Steven,H. B. Cui,A. Kismarahardja,J. S. Brooks,D. Graf,H. Kobayashi###
(402763, 402767)
Role of anion size, magnetic moment, and disorder on the properties of the organic conductor kappa-(BETS)2Ga1-xFex<missing VAR>Cl4-yBry<missing VAR>.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

B
###Role of anion size, magnetic moment, and disorder on the properties of the organic conductor kappa-(BETS)_2Ga_{1-x}Fe_{x}Cl_{4-y}_Br_{y}|E. Steven,H. B. Cui,A. Kismarahardja,J. S. Brooks,D. Graf,H. Kobayashi###
(402830, 402830)
 Shubnikov-de Haas and angular dependent magnetoresistance oscillations havebeen used to explore the role of anion size, magnetic moment, and disorder inthe organic conductors kappa-(BETS)2GaBr4 and kappa-(BETS)2FeCl2Br2in the isomorphic class kappa-(BETS)2Ga1-xFex<missing VAR>Cl4-yBry<missing VAR>.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Role of anion size, magnetic moment, and disorder on the properties of the organic conductor kappa-(BETS)_2Ga_{1-x}Fe_{x}Cl_{4-y}_Br_{y}|E. Steven,H. B. Cui,A. Kismarahardja,J. S. Brooks,D. Graf,H. Kobayashi###
(402833, 402833)
 Shubnikov-de Haas and angular dependent magnetoresistance oscillations havebeen used to explore the role of anion size, magnetic moment, and disorder inthe organic conductors kappa-(BETS)2GaBr4 and kappa-(BETS)2FeCl2Br2in the isomorphic class kappa-(BETS)2Ga1-xFex<missing VAR>Cl4-yBry<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaBr4
###Role of anion size, magnetic moment, and disorder on the properties of the organic conductor kappa-(BETS)_2Ga_{1-x}Fe_{x}Cl_{4-y}_Br_{y}|E. Steven,H. B. Cui,A. Kismarahardja,J. S. Brooks,D. Graf,H. Kobayashi###
(402836, 402838)
 Shubnikov-de Haas and angular dependent magnetoresistance oscillations havebeen used to explore the role of anion size, magnetic moment, and disorder inthe organic conductors kappa-(BETS)2GaBr4 and kappa-(BETS)2FeCl2Br2in the isomorphic class kappa-(BETS)2Ga1-xFex<missing VAR>Cl4-yBry<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Role of anion size, magnetic moment, and disorder on the properties of the organic conductor kappa-(BETS)_2Ga_{1-x}Fe_{x}Cl_{4-y}_Br_{y}|E. Steven,H. B. Cui,A. Kismarahardja,J. S. Brooks,D. Graf,H. Kobayashi###
(402845, 402845)
 Shubnikov-de Haas and angular dependent magnetoresistance oscillations havebeen used to explore the role of anion size, magnetic moment, and disorder inthe organic conductors kappa-(BETS)2GaBr4 and kappa-(BETS)2FeCl2Br2in the isomorphic class kappa-(BETS)2Ga1-xFex<missing VAR>Cl4-yBry<missing VAR>.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Role of anion size, magnetic moment, and disorder on the properties of the organic conductor kappa-(BETS)_2Ga_{1-x}Fe_{x}Cl_{4-y}_Br_{y}|E. Steven,H. B. Cui,A. Kismarahardja,J. S. Brooks,D. Graf,H. Kobayashi###
(402848, 402848)
 Shubnikov-de Haas and angular dependent magnetoresistance oscillations havebeen used to explore the role of anion size, magnetic moment, and disorder inthe organic conductors kappa-(BETS)2GaBr4 and kappa-(BETS)2FeCl2Br2in the isomorphic class kappa-(BETS)2Ga1-xFex<missing VAR>Cl4-yBry<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeCl2Br2
###Role of anion size, magnetic moment, and disorder on the properties of the organic conductor kappa-(BETS)_2Ga_{1-x}Fe_{x}Cl_{4-y}_Br_{y}|E. Steven,H. B. Cui,A. Kismarahardja,J. S. Brooks,D. Graf,H. Kobayashi###
(402851, 402855)
 Shubnikov-de Haas and angular dependent magnetoresistance oscillations havebeen used to explore the role of anion size, magnetic moment, and disorder inthe organic conductors kappa-(BETS)2GaBr4 and kappa-(BETS)2FeCl2Br2in the isomorphic class kappa-(BETS)2Ga1-xFex<missing VAR>Cl4-yBry<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Role of anion size, magnetic moment, and disorder on the properties of the organic conductor kappa-(BETS)_2Ga_{1-x}Fe_{x}Cl_{4-y}_Br_{y}|E. Steven,H. B. Cui,A. Kismarahardja,J. S. Brooks,D. Graf,H. Kobayashi###
(402869, 402869)
 Shubnikov-de Haas and angular dependent magnetoresistance oscillations havebeen used to explore the role of anion size, magnetic moment, and disorder inthe organic conductors kappa-(BETS)2GaBr4 and kappa-(BETS)2FeCl2Br2in the isomorphic class kappa-(BETS)2Ga1-xFex<missing VAR>Cl4-yBry<missing VAR>.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Role of anion size, magnetic moment, and disorder on the properties of the organic conductor kappa-(BETS)_2Ga_{1-x}Fe_{x}Cl_{4-y}_Br_{y}|E. Steven,H. B. Cui,A. Kismarahardja,J. S. Brooks,D. Graf,H. Kobayashi###
(402872, 402872)
 Shubnikov-de Haas and angular dependent magnetoresistance oscillations havebeen used to explore the role of anion size, magnetic moment, and disorder inthe organic conductors kappa-(BETS)2GaBr4 and kappa-(BETS)2FeCl2Br2in the isomorphic class kappa-(BETS)2Ga1-xFex<missing VAR>Cl4-yBry<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga1-xFe
###Role of anion size, magnetic moment, and disorder on the properties of the organic conductor kappa-(BETS)_2Ga_{1-x}Fe_{x}Cl_{4-y}_Br_{y}|E. Steven,H. B. Cui,A. Kismarahardja,J. S. Brooks,D. Graf,H. Kobayashi###
(402875, 402879)
 Shubnikov-de Haas and angular dependent magnetoresistance oscillations havebeen used to explore the role of anion size, magnetic moment, and disorder inthe organic conductors kappa-(BETS)2GaBr4 and kappa-(BETS)2FeCl2Br2in the isomorphic class kappa-(BETS)2Ga1-xFex<missing VAR>Cl4-yBry<missing VAR>.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

Cl4-yBr
###Role of anion size, magnetic moment, and disorder on the properties of the organic conductor kappa-(BETS)_2Ga_{1-x}Fe_{x}Cl_{4-y}_Br_{y}|E. Steven,H. B. Cui,A. Kismarahardja,J. S. Brooks,D. Graf,H. Kobayashi###
(402881, 402885)
 Shubnikov-de Haas and angular dependent magnetoresistance oscillations havebeen used to explore the role of anion size, magnetic moment, and disorder inthe organic conductors kappa-(BETS)2GaBr4 and kappa-(BETS)2FeCl2Br2in the isomorphic class kappa-(BETS)2Ga1-xFex<missing VAR>Cl4-yBry<missing VAR>.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

Ga1-xFe
###Role of anion size, magnetic moment, and disorder on the properties of the organic conductor kappa-(BETS)_2Ga_{1-x}Fe_{x}Cl_{4-y}_Br_{y}|E. Steven,H. B. Cui,A. Kismarahardja,J. S. Brooks,D. Graf,H. Kobayashi###
(402918, 402922)
 Theresults, combined with previous work, show correlations between the anioncomposition (Ga1-xFex<missing VAR>Cl4-yBry) and the superconducting transitiontemperature, effective mass, Fermi surface topology, and the mean free path.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

Cl4-yBr
###Role of anion size, magnetic moment, and disorder on the properties of the organic conductor kappa-(BETS)_2Ga_{1-x}Fe_{x}Cl_{4-y}_Br_{y}|E. Steven,H. B. Cui,A. Kismarahardja,J. S. Brooks,D. Graf,H. Kobayashi###
(402924, 402928)
 Theresults, combined with previous work, show correlations between the anioncomposition (Ga1-xFex<missing VAR>Cl4-yBry) and the superconducting transitiontemperature, effective mass, Fermi surface topology, and the mean free path.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

La2
###A comparative study of angle dependent magnetoresistance in [001] and [110] $La_{2/3}Sr_{1/3}MnO_3$|Soumen Mandal###
(403379, 403380)
A comparative study of angle dependent magnetoresistance in [001] and [110] La2/3Sr1/3MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr1
###A comparative study of angle dependent magnetoresistance in [001] and [110] $La_{2/3}Sr_{1/3}MnO_3$|Soumen Mandal###
(403383, 403384)
A comparative study of angle dependent magnetoresistance in [001] and [110] La2/3Sr1/3MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnO3
###A comparative study of angle dependent magnetoresistance in [001] and [110] $La_{2/3}Sr_{1/3}MnO_3$|Soumen Mandal###
(403387, 403389)
A comparative study of angle dependent magnetoresistance in [001] and [110] La2/3Sr1/3MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La2
###A comparative study of angle dependent magnetoresistance in [001] and [110] $La_{2/3}Sr_{1/3}MnO_3$|Soumen Mandal###
(403414, 403415)
 The angle dependent magnetoresistance study on [001] and [110] La2 /3Sr1 / 3MnO3 thin films show that the anisotropy energy of [110]films is higher when compared with a [001] oriented La2 / 3Sr1 /3MnO3 film of similar thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr1
###A comparative study of angle dependent magnetoresistance in [001] and [110] $La_{2/3}Sr_{1/3}MnO_3$|Soumen Mandal###
(403421, 403422)
 The angle dependent magnetoresistance study on [001] and [110] La2 /3Sr1 / 3MnO3 thin films show that the anisotropy energy of [110]films is higher when compared with a [001] oriented La2 / 3Sr1 /3MnO3 film of similar thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnO3
###A comparative study of angle dependent magnetoresistance in [001] and [110] $La_{2/3}Sr_{1/3}MnO_3$|Soumen Mandal###
(403427, 403429)
 The angle dependent magnetoresistance study on [001] and [110] La2 /3Sr1 / 3MnO3 thin films show that the anisotropy energy of [110]films is higher when compared with a [001] oriented La2 / 3Sr1 /3MnO3 film of similar thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La2
###A comparative study of angle dependent magnetoresistance in [001] and [110] $La_{2/3}Sr_{1/3}MnO_3$|Soumen Mandal###
(403472, 403473)
 The angle dependent magnetoresistance study on [001] and [110] La2 /3Sr1 / 3MnO3 thin films show that the anisotropy energy of [110]films is higher when compared with a [001] oriented La2 / 3Sr1 /3MnO3 film of similar thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr1
###A comparative study of angle dependent magnetoresistance in [001] and [110] $La_{2/3}Sr_{1/3}MnO_3$|Soumen Mandal###
(403478, 403479)
 The angle dependent magnetoresistance study on [001] and [110] La2 /3Sr1 / 3MnO3 thin films show that the anisotropy energy of [110]films is higher when compared with a [001] oriented La2 / 3Sr1 /3MnO3 film of similar thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnO3
###A comparative study of angle dependent magnetoresistance in [001] and [110] $La_{2/3}Sr_{1/3}MnO_3$|Soumen Mandal###
(403485, 403487)
 The angle dependent magnetoresistance study on [001] and [110] La2 /3Sr1 / 3MnO3 thin films show that the anisotropy energy of [110]films is higher when compared with a [001] oriented La2 / 3Sr1 /3MnO3 film of similar thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Spin and Valley Splittings in Multilayered Massless Dirac Fermion System|N. Tajima,M. Sato,S. Sugawara,R. Kato,Y. Nishio,K. Kajita###
(403815, 403815)
 The inter-layer magnetoresistance in a multilayered massless Dirac fermionsystem, alpha-(BEDT-TTF)2I3, under hydrostatic pressure wasinvestigated.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 2, 'D', 1],[125.0, 2, 'K', 3]

F
###Spin and Valley Splittings in Multilayered Massless Dirac Fermion System|N. Tajima,M. Sato,S. Sugawara,R. Kato,Y. Nishio,K. Kajita###
(403822, 403822)
 The inter-layer magnetoresistance in a multilayered massless Dirac fermionsystem, alpha-(BEDT-TTF)2I3, under hydrostatic pressure wasinvestigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 2, 'D', 1],[118.0, 2, 'K', 3]

I3
###Spin and Valley Splittings in Multilayered Massless Dirac Fermion System|N. Tajima,M. Sato,S. Sugawara,R. Kato,Y. Nishio,K. Kajita###
(403825, 403826)
 The inter-layer magnetoresistance in a multilayered massless Dirac fermionsystem, alpha-(BEDT-TTF)2I3, under hydrostatic pressure wasinvestigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 2, 'D', 1],[114.0, 2, 'K', 3]

At
###Spin and Valley Splittings in Multilayered Massless Dirac Fermion System|N. Tajima,M. Sato,S. Sugawara,R. Kato,Y. Nishio,K. Kajita###
(403934, 403934)
 At temperaturesbelow 2K, magnetic fields above several Tesla break the twofold valleydegeneracy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 2, 'D', 2],[6.0, 2, 'K', 0]

EuFe2As2
###Magnetotransport studies of EuFe$_2$As$_2$: the influence of the Eu$^{2+}$ magnetic moments|Taichi Terashima,Nobuyuki Kurita,Akiko Kikkawa,Hiroyuki S. Suzuki,Takehiko Matsumoto,Keizo Murata,Shinya Uji###
(403979, 403983)
Magnetotransport studies of EuFe2As2 the influence of the Eu2 magnetic moments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 28, 'kbar', 1]

Eu2
###Magnetotransport studies of EuFe$_2$As$_2$: the influence of the Eu$^{2+}$ magnetic moments|Taichi Terashima,Nobuyuki Kurita,Akiko Kikkawa,Hiroyuki S. Suzuki,Takehiko Matsumoto,Keizo Murata,Shinya Uji###
(403993, 403994)
Magnetotransport studies of EuFe2As2 the influence of the Eu2 magnetic moments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 28, 'kbar', 1]

EuFe2As2
###Magnetotransport studies of EuFe$_2$As$_2$: the influence of the Eu$^{2+}$ magnetic moments|Taichi Terashima,Nobuyuki Kurita,Akiko Kikkawa,Hiroyuki S. Suzuki,Takehiko Matsumoto,Keizo Murata,Shinya Uji###
(404019, 404023)
 We report resistivity rho and Hall effect measurements on EuFe2As2at ambient pressure and 28 kbar and magnetization measurements at ambientpressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 28, 'kbar', 0]

Eu2
###Magnetotransport studies of EuFe$_2$As$_2$: the influence of the Eu$^{2+}$ magnetic moments|Taichi Terashima,Nobuyuki Kurita,Akiko Kikkawa,Hiroyuki S. Suzuki,Takehiko Matsumoto,Keizo Murata,Shinya Uji###
(404128, 404129)
 We analyze the temperature and magnetic-field dependence of rhoand the Hall effect using a molecular-field theory for magnetoresistance and anempirical formula for the anomalous Hall effect and find that electronscattering due to the Eu2 local moments plays only a minor role indetermining electronic transport properties of EuFe2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 28, 'kbar', 1]

EuFe2As2
###Magnetotransport studies of EuFe$_2$As$_2$: the influence of the Eu$^{2+}$ magnetic moments|Taichi Terashima,Nobuyuki Kurita,Akiko Kikkawa,Hiroyuki S. Suzuki,Takehiko Matsumoto,Keizo Murata,Shinya Uji###
(404158, 404162)
 We analyze the temperature and magnetic-field dependence of rhoand the Hall effect using a molecular-field theory for magnetoresistance and anempirical formula for the anomalous Hall effect and find that electronscattering due to the Eu2 local moments plays only a minor role indetermining electronic transport properties of EuFe2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 28, 'kbar', 1]

Nd2-xCe
###Anomalous behavior of the Hall effect in electron-doped superconductor $Nd_{2-x}$Ce_{x}Cu$O_{4+δ} with nonstoichiometric disorder|T. B. Charikova,N. G. Shelushinina,G. I. Harus,V. N. Neverov,D. S. Petukhov,O. E. Sochinskaya,A. A. Ivanov###
(404363, 404367)
Anomalous behavior of the Hall effect in electron-doped superconductor Nd2-xCex<missing VAR>CuO4 with nonstoichiometric disorder.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[76.0, 0.14, ';', 1],[79.0, 0.15, ';', 1],[81.0, 0.18, 'and', 1]

CuO4
###Anomalous behavior of the Hall effect in electron-doped superconductor $Nd_{2-x}$Ce_{x}Cu$O_{4+δ} with nonstoichiometric disorder|T. B. Charikova,N. G. Shelushinina,G. I. Harus,V. N. Neverov,D. S. Petukhov,O. E. Sochinskaya,A. A. Ivanov###
(404369, 404371)
Anomalous behavior of the Hall effect in electron-doped superconductor Nd2-xCex<missing VAR>CuO4 with nonstoichiometric disorder.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 0.14, ';', 1],[75.0, 0.15, ';', 1],[77.0, 0.18, 'and', 1]

B9
###Anomalous behavior of the Hall effect in electron-doped superconductor $Nd_{2-x}$Ce_{x}Cu$O_{4+δ} with nonstoichiometric disorder|T. B. Charikova,N. G. Shelushinina,G. I. Harus,V. N. Neverov,D. S. Petukhov,O. E. Sochinskaya,A. A. Ivanov###
(404400, 404401)
 Magnetoresistivity and Hall effect measured in magnetic fields up to B9T<missing VAR>(Bc<missing VAR>, J<missing VAR>ab) in electron-doped Nd2-xCex<missing VAR>CuO4delta singlecrystal films with x<missing VAR>  0.14; 0.15; 0.18 and different oxygen content (delta)were studied in a temperature range of 0.4-4.2 K.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 0.14, ';', 0],[45.0, 0.15, ';', 0],[47.0, 0.18, 'and', 0]

B
###Anomalous behavior of the Hall effect in electron-doped superconductor $Nd_{2-x}$Ce_{x}Cu$O_{4+δ} with nonstoichiometric disorder|T. B. Charikova,N. G. Shelushinina,G. I. Harus,V. N. Neverov,D. S. Petukhov,O. E. Sochinskaya,A. A. Ivanov###
(404406, 404406)
 Magnetoresistivity and Hall effect measured in magnetic fields up to B9T<missing VAR>(Bc<missing VAR>, J<missing VAR>ab) in electron-doped Nd2-xCex<missing VAR>CuO4delta singlecrystal films with x<missing VAR>  0.14; 0.15; 0.18 and different oxygen content (delta)were studied in a temperature range of 0.4-4.2 K.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 0.14, ';', 0],[40.0, 0.15, ';', 0],[42.0, 0.18, 'and', 0]

Nd2-xCe
###Anomalous behavior of the Hall effect in electron-doped superconductor $Nd_{2-x}$Ce_{x}Cu$O_{4+δ} with nonstoichiometric disorder|T. B. Charikova,N. G. Shelushinina,G. I. Harus,V. N. Neverov,D. S. Petukhov,O. E. Sochinskaya,A. A. Ivanov###
(404420, 404424)
 Magnetoresistivity and Hall effect measured in magnetic fields up to B9T<missing VAR>(Bc<missing VAR>, J<missing VAR>ab) in electron-doped Nd2-xCex<missing VAR>CuO4delta singlecrystal films with x<missing VAR>  0.14; 0.15; 0.18 and different oxygen content (delta)were studied in a temperature range of 0.4-4.2 K.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[19.0, 0.14, ';', 0],[22.0, 0.15, ';', 0],[24.0, 0.18, 'and', 0]

CuO4
###Anomalous behavior of the Hall effect in electron-doped superconductor $Nd_{2-x}$Ce_{x}Cu$O_{4+δ} with nonstoichiometric disorder|T. B. Charikova,N. G. Shelushinina,G. I. Harus,V. N. Neverov,D. S. Petukhov,O. E. Sochinskaya,A. A. Ivanov###
(404426, 404428)
 Magnetoresistivity and Hall effect measured in magnetic fields up to B9T<missing VAR>(Bc<missing VAR>, J<missing VAR>ab) in electron-doped Nd2-xCex<missing VAR>CuO4delta singlecrystal films with x<missing VAR>  0.14; 0.15; 0.18 and different oxygen content (delta)were studied in a temperature range of 0.4-4.2 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 0.14, ';', 0],[18.0, 0.15, ';', 0],[20.0, 0.18, 'and', 0]

K
###Anomalous behavior of the Hall effect in electron-doped superconductor $Nd_{2-x}$Ce_{x}Cu$O_{4+δ} with nonstoichiometric disorder|T. B. Charikova,N. G. Shelushinina,G. I. Harus,V. N. Neverov,D. S. Petukhov,O. E. Sochinskaya,A. A. Ivanov###
(404479, 404479)
 Magnetoresistivity and Hall effect measured in magnetic fields up to B9T<missing VAR>(Bc<missing VAR>, J<missing VAR>ab) in electron-doped Nd2-xCex<missing VAR>CuO4delta singlecrystal films with x<missing VAR>  0.14; 0.15; 0.18 and different oxygen content (delta)were studied in a temperature range of 0.4-4.2 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 0.14, ';', 0],[33.0, 0.15, ';', 0],[31.0, 0.18, 'and', 0]

ZnO
###Coulomb Oscillations of Indium-doped ZnO Nanowire Transistors in a Magnetic Field|Xiulai Xu,Andrew C. Irvine,Yang Yang,Xitian Zhang,David A. Williams###
(404570, 404571)
Coulomb Oscillations of Indium-doped ZnO Nanowire Transistors in a Magnetic Field.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 20, 'K', 2]

ZnO
###Coulomb Oscillations of Indium-doped ZnO Nanowire Transistors in a Magnetic Field|Xiulai Xu,Andrew C. Irvine,Yang Yang,Xitian Zhang,David A. Williams###
(404625, 404626)
 We report on the observation of Coulomb oscillations from localized quantumdots superimposed on the normal hopping current in ZnO nanowire transistors.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 20, 'K', 1]

Bi2Te3
###Experimental evidence on the Altshuler-Aronov-Spivak interference of the topological surface states in the exfoliated Bi2Te3 nanoflakes|Yuyuan Qin,Zhaoguo Li,Fengqi Song,Qianghua Wang,Wangfeng Ding,Xuefeng Wang,Haifeng Ding,Baigeng Wang,Chris Van Haesondonck,Jianguo Wan,Min Han,Y. H. Zhang,Guanghou Wang###
(404798, 404801)
Experimental evidence on the Altshuler-Aronov-Spivak interference of the topological surface states in the exfoliated Bi2Te3 nanoflakes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Experimental evidence on the Altshuler-Aronov-Spivak interference of the topological surface states in the exfoliated Bi2Te3 nanoflakes|Yuyuan Qin,Zhaoguo Li,Fengqi Song,Qianghua Wang,Wangfeng Ding,Xuefeng Wang,Haifeng Ding,Baigeng Wang,Chris Van Haesondonck,Jianguo Wan,Min Han,Y. H. Zhang,Guanghou Wang###
(404823, 404823)
 Here we demonstrate the Altshuler-Aronov-Spivak (AAS) interference of thetopological surface states on the exfoliated Bi2Te3 microflakes by a fluxperiod of h<missing VAR>/2e<missing VAR> in their magnetoresistance oscillations and its weak fieldcharacter.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Te3
###Experimental evidence on the Altshuler-Aronov-Spivak interference of the topological surface states in the exfoliated Bi2Te3 nanoflakes|Yuyuan Qin,Zhaoguo Li,Fengqi Song,Qianghua Wang,Wangfeng Ding,Xuefeng Wang,Haifeng Ding,Baigeng Wang,Chris Van Haesondonck,Jianguo Wan,Min Han,Y. H. Zhang,Guanghou Wang###
(404845, 404848)
 Here we demonstrate the Altshuler-Aronov-Spivak (AAS) interference of thetopological surface states on the exfoliated Bi2Te3 microflakes by a fluxperiod of h<missing VAR>/2e<missing VAR> in their magnetoresistance oscillations and its weak fieldcharacter.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Experimental evidence on the Altshuler-Aronov-Spivak interference of the topological surface states in the exfoliated Bi2Te3 nanoflakes|Yuyuan Qin,Zhaoguo Li,Fengqi Song,Qianghua Wang,Wangfeng Ding,Xuefeng Wang,Haifeng Ding,Baigeng Wang,Chris Van Haesondonck,Jianguo Wan,Min Han,Y. H. Zhang,Guanghou Wang###
(404930, 404930)
The h<missing VAR>/2e<missing VAR>-period AAS oscillation gradually dominates with increasing the samplewidths and the temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Conduction Electron Spin-Flipping at Sputtered Co(90)Fe(10)/Cu Interfaces|H. Y. T. Nguyen,R. Acharyya,W. P. Pratt Jr.,J. Bass###
(405013, 405013)
Conduction Electron Spin-Flipping at Sputtered Co(90)Fe(10)/Cu Interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 0.04, 'that', 1]

(CPP)
###Conduction Electron Spin-Flipping at Sputtered Co(90)Fe(10)/Cu Interfaces|H. Y. T. Nguyen,R. Acharyya,W. P. Pratt Jr.,J. Bass###
(405034, 405038)
 From measurements of the current-perpendicular-to-plane (CPP)magnetoresistance of ferromagnetically coupled [Co(90)Fe(10)/Cu]xn multilayers,within sputtered Permalloy-based double exchange biased spin-valves, wedetermine the parameter delta[(Co(90)Fe(10))/Cu]  0.19 /- 0.04 that sets theprobability P of spin-flipping at a Co(90)Fe(10)/Cu interface via the equationP  1 - exp(-delta).
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 0.04, 'that', 0]

Cu
###Conduction Electron Spin-Flipping at Sputtered Co(90)Fe(10)/Cu Interfaces|H. Y. T. Nguyen,R. Acharyya,W. P. Pratt Jr.,J. Bass###
(405059, 405059)
 From measurements of the current-perpendicular-to-plane (CPP)magnetoresistance of ferromagnetically coupled [Co(90)Fe(10)/Cu]xn multilayers,within sputtered Permalloy-based double exchange biased spin-valves, wedetermine the parameter delta[(Co(90)Fe(10))/Cu]  0.19 /- 0.04 that sets theprobability P of spin-flipping at a Co(90)Fe(10)/Cu interface via the equationP  1 - exp(-delta).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 0.04, 'that', 0]

Cu
###Conduction Electron Spin-Flipping at Sputtered Co(90)Fe(10)/Cu Interfaces|H. Y. T. Nguyen,R. Acharyya,W. P. Pratt Jr.,J. Bass###
(405108, 405108)
 From measurements of the current-perpendicular-to-plane (CPP)magnetoresistance of ferromagnetically coupled [Co(90)Fe(10)/Cu]xn multilayers,within sputtered Permalloy-based double exchange biased spin-valves, wedetermine the parameter delta[(Co(90)Fe(10))/Cu]  0.19 /- 0.04 that sets theprobability P of spin-flipping at a Co(90)Fe(10)/Cu interface via the equationP  1 - exp(-delta).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 0.04, 'that', 0]

P
###Conduction Electron Spin-Flipping at Sputtered Co(90)Fe(10)/Cu Interfaces|H. Y. T. Nguyen,R. Acharyya,W. P. Pratt Jr.,J. Bass###
(405125, 405125)
 From measurements of the current-perpendicular-to-plane (CPP)magnetoresistance of ferromagnetically coupled [Co(90)Fe(10)/Cu]xn multilayers,within sputtered Permalloy-based double exchange biased spin-valves, wedetermine the parameter delta[(Co(90)Fe(10))/Cu]  0.19 /- 0.04 that sets theprobability P of spin-flipping at a Co(90)Fe(10)/Cu interface via the equationP  1 - exp(-delta).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 0.04, 'that', 0]

Cu
###Conduction Electron Spin-Flipping at Sputtered Co(90)Fe(10)/Cu Interfaces|H. Y. T. Nguyen,R. Acharyya,W. P. Pratt Jr.,J. Bass###
(405146, 405146)
 From measurements of the current-perpendicular-to-plane (CPP)magnetoresistance of ferromagnetically coupled [Co(90)Fe(10)/Cu]xn multilayers,within sputtered Permalloy-based double exchange biased spin-valves, wedetermine the parameter delta[(Co(90)Fe(10))/Cu]  0.19 /- 0.04 that sets theprobability P of spin-flipping at a Co(90)Fe(10)/Cu interface via the equationP  1 - exp(-delta).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 0.04, 'that', 0]

P
###Conduction Electron Spin-Flipping at Sputtered Co(90)Fe(10)/Cu Interfaces|H. Y. T. Nguyen,R. Acharyya,W. P. Pratt Jr.,J. Bass###
(405157, 405157)
 From measurements of the current-perpendicular-to-plane (CPP)magnetoresistance of ferromagnetically coupled [Co(90)Fe(10)/Cu]xn multilayers,within sputtered Permalloy-based double exchange biased spin-valves, wedetermine the parameter delta[(Co(90)Fe(10))/Cu]  0.19 /- 0.04 that sets theprobability P of spin-flipping at a Co(90)Fe(10)/Cu interface via the equationP  1 - exp(-delta).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 0.04, 'that', 0]

La0.75Sr0.25MnO3
###Effects of Annealing Conditions on the Microstructure and Magnetic Properties of the Perovskite Manganite, La0.75Sr0.25MnO3|D. O. J. Green,K-U. Neumann###
(405391, 405397)
Effects of Annealing Conditions on the Microstructure and Magnetic Properties of the Perovskite Manganite, La0.75Sr0.25MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.05,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.75Sr0.25MnO3
###Effects of Annealing Conditions on the Microstructure and Magnetic Properties of the Perovskite Manganite, La0.75Sr0.25MnO3|D. O. J. Green,K-U. Neumann###
(405435, 405441)
 The effects of annealing conditions upon the microstructure and the magneticproperties of the colossal magnetoresistive manganite La0.75Sr0.25MnO3 havebeen investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.05,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Pressure effects on Dirac fermions in α-(BEDT-TTF)2I3|Takahiro Himura,Takao Morinari,Takami Tohyama###
(405573, 405573)
Pressure effects on Dirac fermions in -(BEDT-TTF)2I3.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Pressure effects on Dirac fermions in α-(BEDT-TTF)2I3|Takahiro Himura,Takao Morinari,Takami Tohyama###
(405580, 405580)
Pressure effects on Dirac fermions in -(BEDT-TTF)2I3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I3
###Pressure effects on Dirac fermions in α-(BEDT-TTF)2I3|Takahiro Himura,Takao Morinari,Takami Tohyama###
(405583, 405584)
Pressure effects on Dirac fermions in -(BEDT-TTF)2I3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Pressure effects on Dirac fermions in α-(BEDT-TTF)2I3|Takahiro Himura,Takao Morinari,Takami Tohyama###
(405632, 405632)
 We investigate the pressure effect on the layered Dirac fermion system, whichis realized in quasi-two-dimensional organic compound alpha-(BEDT-TTF)2I3.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Pressure effects on Dirac fermions in α-(BEDT-TTF)2I3|Takahiro Himura,Takao Morinari,Takami Tohyama###
(405639, 405639)
 We investigate the pressure effect on the layered Dirac fermion system, whichis realized in quasi-two-dimensional organic compound alpha-(BEDT-TTF)2I3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I3
###Pressure effects on Dirac fermions in α-(BEDT-TTF)2I3|Takahiro Himura,Takao Morinari,Takami Tohyama###
(405642, 405643)
 We investigate the pressure effect on the layered Dirac fermion system, whichis realized in quasi-two-dimensional organic compound alpha-(BEDT-TTF)2I3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFeB/MgO/CoFeB
###Sub-Poissonian shot noise in CoFeB/MgO/CoFeB-based magnetic tunneling junctions|Tomonori Arakawa,Koji Sekiguchi,Shuji Nakamura,Kensaku Chida,Yoshitaka Nishihara,Daichi Chiba,Kensuke Kobayashi,Akio Fukushima,Shinji Yuasa,Teruo Ono###
(405756, 405765)
Sub-Poissonian shot noise in CoFeB/MgO/CoFeB-based magnetic tunneling junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[60.0, 200, '%', 1],[64.0, 3, 'K', 1]

CoFeB/MgO/CoFeB
###Sub-Poissonian shot noise in CoFeB/MgO/CoFeB-based magnetic tunneling junctions|Tomonori Arakawa,Koji Sekiguchi,Shuji Nakamura,Kensaku Chida,Yoshitaka Nishihara,Daichi Chiba,Kensuke Kobayashi,Akio Fukushima,Shinji Yuasa,Teruo Ono###
(405790, 405799)
 We measured the shot noise in the CoFeB/MgO/CoFeB-based magnetic tunnelingjunctions with a high tunneling magnetoresistance ratio (over 200% at 3 K).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[26.0, 200, '%', 0],[30.0, 3, 'K', 0]

GaAs
###Ballistic transport of (001) GaAs 2D holes through a strain-induced lateral superlattice|D. Kamburov,H. Shapourian,M. Shayegan,L. N. Pfeiffer,K. W. West,K. W. Baldwin,R. Winkler###
(406138, 406139)
Ballistic transport of (001) GaAs 2D holes through a strain-induced lateral superlattice.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[1.0, 2, 'D', 0]

GaAs
###Ballistic transport of (001) GaAs 2D holes through a strain-induced lateral superlattice|D. Kamburov,H. Shapourian,M. Shayegan,L. N. Pfeiffer,K. W. West,K. W. Baldwin,R. Winkler###
(406193, 406194)
 We report the observation of ballistic commensurability oscillations andpositive magnetoresistance in a high-mobility, (001) GaAs two-dimensional holesystem with a unidirectional, surface-strain-induced, periodic potentialmodulation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 2, 'D', 1]

(F)
###Proposal of an experimental scheme for determination of penetration depth of transverse spin current by a nonlocal spin valve|Tomohiro Taniguchi,Hiroshi Imamura###
(406413, 406415)
 We theoretically propose an experiment to determine the penetration depth ofa transverse spin current using a nonlocal spin valve with three ferromagnetic(F) layers, where the F1, F2, and F3 layers act as the spin injector,detector, and absorber, respectively.
Featurization successful!
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F1
###Proposal of an experimental scheme for determination of penetration depth of transverse spin current by a nonlocal spin valve|Tomohiro Taniguchi,Hiroshi Imamura###
(406424, 406425)
 We theoretically propose an experiment to determine the penetration depth ofa transverse spin current using a nonlocal spin valve with three ferromagnetic(F) layers, where the F1, F2, and F3 layers act as the spin injector,detector, and absorber, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F2
###Proposal of an experimental scheme for determination of penetration depth of transverse spin current by a nonlocal spin valve|Tomohiro Taniguchi,Hiroshi Imamura###
(406428, 406429)
 We theoretically propose an experiment to determine the penetration depth ofa transverse spin current using a nonlocal spin valve with three ferromagnetic(F) layers, where the F1, F2, and F3 layers act as the spin injector,detector, and absorber, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F3
###Proposal of an experimental scheme for determination of penetration depth of transverse spin current by a nonlocal spin valve|Tomohiro Taniguchi,Hiroshi Imamura###
(406434, 406435)
 We theoretically propose an experiment to determine the penetration depth ofa transverse spin current using a nonlocal spin valve with three ferromagnetic(F) layers, where the F1, F2, and F3 layers act as the spin injector,detector, and absorber, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F3
###Proposal of an experimental scheme for determination of penetration depth of transverse spin current by a nonlocal spin valve|Tomohiro Taniguchi,Hiroshi Imamura###
(406512, 406513)
 We show that the penetration depth can beevaluated by measuring the dependence of the spin signal (magnetoresistance) onthe thickness of the F3 layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ge
###Structural, magnetic, magnetocaloric and magneto-transport properties in Ge doped Ni-Mn-Sb Heusler Alloys|Roshnee Sahoo,Ajaya K. Nayak,K. G. Suresh,A. K. Nigam###
(406544, 406544)
Structural, magnetic, magnetocaloric and magneto-transport properties in Ge doped Ni-Mn-Sb Heusler Alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Structural, magnetic, magnetocaloric and magneto-transport properties in Ge doped Ni-Mn-Sb Heusler Alloys|Roshnee Sahoo,Ajaya K. Nayak,K. G. Suresh,A. K. Nigam###
(406548, 406548)
Structural, magnetic, magnetocaloric and magneto-transport properties in Ge doped Ni-Mn-Sb Heusler Alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Structural, magnetic, magnetocaloric and magneto-transport properties in Ge doped Ni-Mn-Sb Heusler Alloys|Roshnee Sahoo,Ajaya K. Nayak,K. G. Suresh,A. K. Nigam###
(406550, 406550)
Structural, magnetic, magnetocaloric and magneto-transport properties in Ge doped Ni-Mn-Sb Heusler Alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sb
###Structural, magnetic, magnetocaloric and magneto-transport properties in Ge doped Ni-Mn-Sb Heusler Alloys|Roshnee Sahoo,Ajaya K. Nayak,K. G. Suresh,A. K. Nigam###
(406552, 406552)
Structural, magnetic, magnetocaloric and magneto-transport properties in Ge doped Ni-Mn-Sb Heusler Alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ge
###Structural, magnetic, magnetocaloric and magneto-transport properties in Ge doped Ni-Mn-Sb Heusler Alloys|Roshnee Sahoo,Ajaya K. Nayak,K. G. Suresh,A. K. Nigam###
(406565, 406565)
 The effect of Ge substitution on the magnetic, magnetocaloric and transportproperties of Ni45Co5Mn38Sb12-xGex (x<missing VAR>0-3) has been investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni45Co5Mn38Sb12-x
###Structural, magnetic, magnetocaloric and magneto-transport properties in Ge doped Ni-Mn-Sb Heusler Alloys|Roshnee Sahoo,Ajaya K. Nayak,K. G. Suresh,A. K. Nigam###
(406587, 406596)
 The effect of Ge substitution on the magnetic, magnetocaloric and transportproperties of Ni45Co5Mn38Sb12-xGex (x<missing VAR>0-3) has been investigated.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

Ge
###Structural, magnetic, magnetocaloric and magneto-transport properties in Ge doped Ni-Mn-Sb Heusler Alloys|Roshnee Sahoo,Ajaya K. Nayak,K. G. Suresh,A. K. Nigam###
(406630, 406630)
 The decreasein the exchange interaction brought by Ge substitution can be seen from thereduction in the magnetization of austenite phase and the increase in themartensitic transition temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O3
###Hanle effect missing in a prototypical organic spintronic device|Alberto Riminucci,Mirko Prezioso,Chiara Pernechele,Patrizio Graziosi,Ilaria Bergenti,Raimondo Cecchini,Marco Calbucci,Massimo Solzi,Alek Dediu###
(406791, 406792)
 We investigate spin precession (Hanle effect) in the prototypical organicspintronic giant magnetoresistance (GMR) deviceLa0.7Sr0.3MnO3(LSMO)/tris(8-hydroxyquinoline)(Alq3)/AlOx/Co.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Hanle effect missing in a prototypical organic spintronic device|Alberto Riminucci,Mirko Prezioso,Chiara Pernechele,Patrizio Graziosi,Ilaria Bergenti,Raimondo Cecchini,Marco Calbucci,Massimo Solzi,Alek Dediu###
(406797, 406797)
 We investigate spin precession (Hanle effect) in the prototypical organicspintronic giant magnetoresistance (GMR) deviceLa0.7Sr0.3MnO3(LSMO)/tris(8-hydroxyquinoline)(Alq3)/AlOx/Co.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Al
###Hanle effect missing in a prototypical organic spintronic device|Alberto Riminucci,Mirko Prezioso,Chiara Pernechele,Patrizio Graziosi,Ilaria Bergenti,Raimondo Cecchini,Marco Calbucci,Massimo Solzi,Alek Dediu###
(406811, 406811)
 We investigate spin precession (Hanle effect) in the prototypical organicspintronic giant magnetoresistance (GMR) deviceLa0.7Sr0.3MnO3(LSMO)/tris(8-hydroxyquinoline)(Alq3)/AlOx/Co.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Hanle effect missing in a prototypical organic spintronic device|Alberto Riminucci,Mirko Prezioso,Chiara Pernechele,Patrizio Graziosi,Ilaria Bergenti,Raimondo Cecchini,Marco Calbucci,Massimo Solzi,Alek Dediu###
(406814, 406814)
 We investigate spin precession (Hanle effect) in the prototypical organicspintronic giant magnetoresistance (GMR) deviceLa0.7Sr0.3MnO3(LSMO)/tris(8-hydroxyquinoline)(Alq3)/AlOx/Co.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Hanle effect missing in a prototypical organic spintronic device|Alberto Riminucci,Mirko Prezioso,Chiara Pernechele,Patrizio Graziosi,Ilaria Bergenti,Raimondo Cecchini,Marco Calbucci,Massimo Solzi,Alek Dediu###
(406866, 406866)
 As possible explanations we discuss thetilting out of plane of the magnetization of the electrodes, exceptionally highmobility or hot spots.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Theory of giant magnetoresistance at misfit interfaces|Daichi Asahi,Naoto Nagaosa###
(407076, 407076)
 The size of theenlarged unit cell lambda  n<missing VAR>Aa  n<missing VAR>Bb (n<missing VAR>A, n<missing VAR>B integers) is thecrucial quantity, and the magnetic flux penetrating this enlarged unit celldetermines the oscillation of the resistance.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co2FeSi
###High TMR ratio in Co2FeSi and Fe2CoSi based magnetic tunnel junctions|Christian Sterwerf,Markus Meinert,Jan-Michael Schmalhorst,Günter Reiss###
(407365, 407368)
High TMR ratio in Co2FeSi and Fe2CoSi based magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0.25,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 15, 'K', 2]

Fe2CoSi
###High TMR ratio in Co2FeSi and Fe2CoSi based magnetic tunnel junctions|Christian Sterwerf,Markus Meinert,Jan-Michael Schmalhorst,Günter Reiss###
(407372, 407375)
High TMR ratio in Co2FeSi and Fe2CoSi based magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0.5,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 15, 'K', 2]

Fe1
###High TMR ratio in Co2FeSi and Fe2CoSi based magnetic tunnel junctions|Christian Sterwerf,Markus Meinert,Jan-Michael Schmalhorst,Günter Reiss###
(407394, 407395)
 Magnetic tunnel junctions with Fe1x<missing VAR>Co2-xSi (0 < x<missing VAR> < 1) electrodes and MgObarrier were prepared on MgO substrates by magnetron co-sputtering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 15, 'K', 1]

Co2-xSi
###High TMR ratio in Co2FeSi and Fe2CoSi based magnetic tunnel junctions|Christian Sterwerf,Markus Meinert,Jan-Michael Schmalhorst,Günter Reiss###
(407397, 407401)
 Magnetic tunnel junctions with Fe1x<missing VAR>Co2-xSi (0 < x<missing VAR> < 1) electrodes and MgObarrier were prepared on MgO substrates by magnetron co-sputtering.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[66.0, 15, 'K', 1]

MgO
###High TMR ratio in Co2FeSi and Fe2CoSi based magnetic tunnel junctions|Christian Sterwerf,Markus Meinert,Jan-Michael Schmalhorst,Günter Reiss###
(407419, 407420)
 Magnetic tunnel junctions with Fe1x<missing VAR>Co2-xSi (0 < x<missing VAR> < 1) electrodes and MgObarrier were prepared on MgO substrates by magnetron co-sputtering.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 15, 'K', 1]

MgO
###High TMR ratio in Co2FeSi and Fe2CoSi based magnetic tunnel junctions|Christian Sterwerf,Markus Meinert,Jan-Michael Schmalhorst,Günter Reiss###
(407431, 407432)
 Magnetic tunnel junctions with Fe1x<missing VAR>Co2-xSi (0 < x<missing VAR> < 1) electrodes and MgObarrier were prepared on MgO substrates by magnetron co-sputtering.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 15, 'K', 1]

B
###Crossover from the weak to strong-field behavior of the longitudinal interlayer magnetoresistance in quasi-two-dimensional conductors|Alexej D. Grigoriev,Pavel D. Grigoriev###
(407639, 407639)
 We investigate the monotonic growth of longitudinal interlayermagnetoresistance barR<missing VAR>zz(Bz) , analytically and numerically in theself-consistent Born approximation.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Crossover from the weak to strong-field behavior of the longitudinal interlayer magnetoresistance in quasi-two-dimensional conductors|Alexej D. Grigoriev,Pavel D. Grigoriev###
(407694, 407694)
 We show that in a weak magnetic field themonotonic part of barR<missing VAR>zz(Bz) is almost constant and starts to growonly above the crossover field Bc<missing VAR>, when the Landau levels (LL) becomeisolated, i.e.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Crossover from the weak to strong-field behavior of the longitudinal interlayer magnetoresistance in quasi-two-dimensional conductors|Alexej D. Grigoriev,Pavel D. Grigoriev###
(407723, 407723)
 We show that in a weak magnetic field themonotonic part of barR<missing VAR>zz(Bz) is almost constant and starts to growonly above the crossover field Bc<missing VAR>, when the Landau levels (LL) becomeisolated, i.e.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Crossover from the weak to strong-field behavior of the longitudinal interlayer magnetoresistance in quasi-two-dimensional conductors|Alexej D. Grigoriev,Pavel D. Grigoriev###
(407775, 407775)
In higher field Bz<missing VAR>>>Bc<missing VAR>, barR<missing VAR>zz(Bz) propto Bz<missing VAR>1/2 inagreement with previous works.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Crossover from the weak to strong-field behavior of the longitudinal interlayer magnetoresistance in quasi-two-dimensional conductors|Alexej D. Grigoriev,Pavel D. Grigoriev###
(407781, 407781)
In higher field Bz<missing VAR>>>Bc<missing VAR>, barR<missing VAR>zz(Bz) propto Bz<missing VAR>1/2 inagreement with previous works.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Crossover from the weak to strong-field behavior of the longitudinal interlayer magnetoresistance in quasi-two-dimensional conductors|Alexej D. Grigoriev,Pavel D. Grigoriev###
(407785, 407785)
In higher field Bz<missing VAR>>>Bc<missing VAR>, barR<missing VAR>zz(Bz) propto Bz<missing VAR>1/2 inagreement with previous works.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Crossover from the weak to strong-field behavior of the longitudinal interlayer magnetoresistance in quasi-two-dimensional conductors|Alexej D. Grigoriev,Pavel D. Grigoriev###
(407793, 407793)
In higher field Bz<missing VAR>>>Bc<missing VAR>, barR<missing VAR>zz(Bz) propto Bz<missing VAR>1/2 inagreement with previous works.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Crossover from the weak to strong-field behavior of the longitudinal interlayer magnetoresistance in quasi-two-dimensional conductors|Alexej D. Grigoriev,Pavel D. Grigoriev###
(407799, 407799)
In higher field Bz<missing VAR>>>Bc<missing VAR>, barR<missing VAR>zz(Bz) propto Bz<missing VAR>1/2 inagreement with previous works.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co/Pt
###Formation and anisotropic magnetoresistance of Co/Pt nano-contacts through aluminum oxide barrier|Muftah Al-Mahdawi,Masashi Sahashi###
(407835, 407837)
Formation and anisotropic magnetoresistance of Co/Pt nano-contacts through aluminum oxide barrier.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[177.0, 29, '%', 3]

(NCs)
###Formation and anisotropic magnetoresistance of Co/Pt nano-contacts through aluminum oxide barrier|Muftah Al-Mahdawi,Masashi Sahashi###
(407885, 407888)
 We report on the observation of anisotropic magnetoresistance (AMR) invertical asymmetric nano-contacts (NCs) made through AlOx<missing VAR> nano-oxide layer(NOL) formed by ion-assisted oxidation method in the film stack ofCo/AlOx<missing VAR>-NOL<missing VAR>/Pt.
Featurization successful!
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 29, '%', 2]

AlO
###Formation and anisotropic magnetoresistance of Co/Pt nano-contacts through aluminum oxide barrier|Muftah Al-Mahdawi,Masashi Sahashi###
(407894, 407895)
 We report on the observation of anisotropic magnetoresistance (AMR) invertical asymmetric nano-contacts (NCs) made through AlOx<missing VAR> nano-oxide layer(NOL) formed by ion-assisted oxidation method in the film stack ofCo/AlOx<missing VAR>-NOL<missing VAR>/Pt.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 29, '%', 2]

NO
###Formation and anisotropic magnetoresistance of Co/Pt nano-contacts through aluminum oxide barrier|Muftah Al-Mahdawi,Masashi Sahashi###
(407906, 407907)
 We report on the observation of anisotropic magnetoresistance (AMR) invertical asymmetric nano-contacts (NCs) made through AlOx<missing VAR> nano-oxide layer(NOL) formed by ion-assisted oxidation method in the film stack ofCo/AlOx<missing VAR>-NOL<missing VAR>/Pt.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 29, '%', 2]

Co/AlO
###Formation and anisotropic magnetoresistance of Co/Pt nano-contacts through aluminum oxide barrier|Muftah Al-Mahdawi,Masashi Sahashi###
(407934, 407937)
 We report on the observation of anisotropic magnetoresistance (AMR) invertical asymmetric nano-contacts (NCs) made through AlOx<missing VAR> nano-oxide layer(NOL) formed by ion-assisted oxidation method in the film stack ofCo/AlOx<missing VAR>-NOL<missing VAR>/Pt.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[77.0, 29, '%', 2]

NO
###Formation and anisotropic magnetoresistance of Co/Pt nano-contacts through aluminum oxide barrier|Muftah Al-Mahdawi,Masashi Sahashi###
(407940, 407941)
 We report on the observation of anisotropic magnetoresistance (AMR) invertical asymmetric nano-contacts (NCs) made through AlOx<missing VAR> nano-oxide layer(NOL) formed by ion-assisted oxidation method in the film stack ofCo/AlOx<missing VAR>-NOL<missing VAR>/Pt.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 29, '%', 2]

Pt
###Formation and anisotropic magnetoresistance of Co/Pt nano-contacts through aluminum oxide barrier|Muftah Al-Mahdawi,Masashi Sahashi###
(407944, 407944)
 We report on the observation of anisotropic magnetoresistance (AMR) invertical asymmetric nano-contacts (NCs) made through AlOx<missing VAR> nano-oxide layer(NOL) formed by ion-assisted oxidation method in the film stack ofCo/AlOx<missing VAR>-NOL<missing VAR>/Pt.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 29, '%', 2]

NC
###Formation and anisotropic magnetoresistance of Co/Pt nano-contacts through aluminum oxide barrier|Muftah Al-Mahdawi,Masashi Sahashi###
(407951, 407952)
 Analysis of NC formation was based on emphin situconductive atomic force microscopy and transmission electron microscopy.
Featurization terminated normally.
0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 29, '%', 1]

NCs
###Formation and anisotropic magnetoresistance of Co/Pt nano-contacts through aluminum oxide barrier|Muftah Al-Mahdawi,Masashi Sahashi###
(407996, 407997)
Depending on the purity of NCs from Al contamination, we observed up to 29% AMRratio at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 29, '%', 0]

Al
###Formation and anisotropic magnetoresistance of Co/Pt nano-contacts through aluminum oxide barrier|Muftah Al-Mahdawi,Masashi Sahashi###
(408001, 408001)
Depending on the purity of NCs from Al contamination, we observed up to 29% AMRratio at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 29, '%', 0]

C4
###Magnetoresistance due to Broken C4 Symmetry in Cubic B20 Chiral Magnets|S. X. Huang,Fei Chen,Jian Kang,Jiadong Zang,G. J. Shu,F. C. Chou,C. L. Chien###
(408245, 408246)
Magnetoresistance due to Broken C4 Symmetry in Cubic B20 Chiral Magnets.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B20
###Magnetoresistance due to Broken C4 Symmetry in Cubic B20 Chiral Magnets|S. X. Huang,Fei Chen,Jian Kang,Jiadong Zang,G. J. Shu,F. C. Chou,C. L. Chien###
(408254, 408255)
Magnetoresistance due to Broken C4 Symmetry in Cubic B20 Chiral Magnets.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B20
###Magnetoresistance due to Broken C4 Symmetry in Cubic B20 Chiral Magnets|S. X. Huang,Fei Chen,Jian Kang,Jiadong Zang,G. J. Shu,F. C. Chou,C. L. Chien###
(408264, 408265)
 The B20 chiral magnets with broken inversion symmetry and C4 rotationsymmetry have attracted much attention.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C4
###Magnetoresistance due to Broken C4 Symmetry in Cubic B20 Chiral Magnets|S. X. Huang,Fei Chen,Jian Kang,Jiadong Zang,G. J. Shu,F. C. Chou,C. L. Chien###
(408281, 408282)
 The B20 chiral magnets with broken inversion symmetry and C4 rotationsymmetry have attracted much attention.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B20
###Magnetoresistance due to Broken C4 Symmetry in Cubic B20 Chiral Magnets|S. X. Huang,Fei Chen,Jian Kang,Jiadong Zang,G. J. Shu,F. C. Chou,C. L. Chien###
(408354, 408355)
We report the unusual magnetoresistance (MR) of B20 chiral magnetFe0.85Co0.15Si that directly reveals the broken C4 rotation symmetry.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe0.85Co0.15Si
###Magnetoresistance due to Broken C4 Symmetry in Cubic B20 Chiral Magnets|S. X. Huang,Fei Chen,Jian Kang,Jiadong Zang,G. J. Shu,F. C. Chou,C. L. Chien###
(408362, 408366)
We report the unusual magnetoresistance (MR) of B20 chiral magnetFe0.85Co0.15Si that directly reveals the broken C4 rotation symmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0.425,0.075,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C4
###Magnetoresistance due to Broken C4 Symmetry in Cubic B20 Chiral Magnets|S. X. Huang,Fei Chen,Jian Kang,Jiadong Zang,G. J. Shu,F. C. Chou,C. L. Chien###
(408378, 408379)
We report the unusual magnetoresistance (MR) of B20 chiral magnetFe0.85Co0.15Si that directly reveals the broken C4 rotation symmetry.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaAlO3/SrTiO3
###Current-driven spin orbit field in LaAlO3/SrTiO3 heterostructures|Kulothungasagaran Narayanapillai,Kalon Gopinadhan,Xuepeng Qiu,Anil Annadi,Ariando,Thirumalai Venkatesan,Hyunsoo Yang###
(408462, 408470)
Current-driven spin orbit field in LaAlO3/SrTiO3 heterostructures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[127.0, 2.35, 'T', 3],[142.0, 200, 'uA', 3]

LaAlO3/SrTiO3
###Current-driven spin orbit field in LaAlO3/SrTiO3 heterostructures|Kulothungasagaran Narayanapillai,Kalon Gopinadhan,Xuepeng Qiu,Anil Annadi,Ariando,Thirumalai Venkatesan,Hyunsoo Yang###
(408496, 408504)
 We demonstrate a current tunable Rashba spin orbit interaction inLaAlO3/SrTiO3 (L<missing VAR>AO/ST<missing VAR>O) quasi two dimensional electron gas (2DEG) system.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[93.0, 2.35, 'T', 2],[108.0, 200, 'uA', 2]

O/S
###Current-driven spin orbit field in LaAlO3/SrTiO3 heterostructures|Kulothungasagaran Narayanapillai,Kalon Gopinadhan,Xuepeng Qiu,Anil Annadi,Ariando,Thirumalai Venkatesan,Hyunsoo Yang###
(408509, 408511)
 We demonstrate a current tunable Rashba spin orbit interaction inLaAlO3/SrTiO3 (L<missing VAR>AO/ST<missing VAR>O) quasi two dimensional electron gas (2DEG) system.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[86.0, 2.35, 'T', 2],[101.0, 200, 'uA', 2]

O
###Current-driven spin orbit field in LaAlO3/SrTiO3 heterostructures|Kulothungasagaran Narayanapillai,Kalon Gopinadhan,Xuepeng Qiu,Anil Annadi,Ariando,Thirumalai Venkatesan,Hyunsoo Yang###
(408513, 408513)
 We demonstrate a current tunable Rashba spin orbit interaction inLaAlO3/SrTiO3 (L<missing VAR>AO/ST<missing VAR>O) quasi two dimensional electron gas (2DEG) system.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 2.35, 'T', 2],[99.0, 200, 'uA', 2]

O/S
###Current-driven spin orbit field in LaAlO3/SrTiO3 heterostructures|Kulothungasagaran Narayanapillai,Kalon Gopinadhan,Xuepeng Qiu,Anil Annadi,Ariando,Thirumalai Venkatesan,Hyunsoo Yang###
(408626, 408628)
The results suggest that L<missing VAR>AO/ST<missing VAR>O heterostructures can be considered for spinorbit torque based magnetization switching.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[29.0, 2.35, 'T', 1],[14.0, 200, 'uA', 1]

O
###Current-driven spin orbit field in LaAlO3/SrTiO3 heterostructures|Kulothungasagaran Narayanapillai,Kalon Gopinadhan,Xuepeng Qiu,Anil Annadi,Ariando,Thirumalai Venkatesan,Hyunsoo Yang###
(408630, 408630)
The results suggest that L<missing VAR>AO/ST<missing VAR>O heterostructures can be considered for spinorbit torque based magnetization switching.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 2.35, 'T', 1],[18.0, 200, 'uA', 1]

MgO
###Voltage-controlled inversion of tunnel magnetoresistance in epitaxial Nickel/Graphene/MgO/Cobalt junctions|F. Godel,M. Venkata Kamalakar,B. Doudin,Y. Henry,D. Halley,J. -F. Dayen###
(408684, 408685)
Voltage-controlled inversion of tunnel magnetoresistance in epitaxial Nickel/Graphene/MgO/Cobalt junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Voltage-controlled inversion of tunnel magnetoresistance in epitaxial Nickel/Graphene/MgO/Cobalt junctions|F. Godel,M. Venkata Kamalakar,B. Doudin,Y. Henry,D. Halley,J. -F. Dayen###
(408725, 408726)
 We report on the fabrication and characterization of vertical spin-valvestructures using a thick epitaxial MgO barrier as spacer layer and agraphene-passivated Ni film as bottom ferromagnetic electrode.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Voltage-controlled inversion of tunnel magnetoresistance in epitaxial Nickel/Graphene/MgO/Cobalt junctions|F. Godel,M. Venkata Kamalakar,B. Doudin,Y. Henry,D. Halley,J. -F. Dayen###
(408745, 408745)
 We report on the fabrication and characterization of vertical spin-valvestructures using a thick epitaxial MgO barrier as spacer layer and agraphene-passivated Ni film as bottom ferromagnetic electrode.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Voltage-controlled inversion of tunnel magnetoresistance in epitaxial Nickel/Graphene/MgO/Cobalt junctions|F. Godel,M. Venkata Kamalakar,B. Doudin,Y. Henry,D. Halley,J. -F. Dayen###
(408861, 408861)
 These findings are explained by a model ofphonon-assisted transport mechanisms that relies on the peculiarity of the bandstructure and spin density of states at the hybrid grapheneNi interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PtCoO2
###Crystal growth, resistivity and Hall effect of the delafossite metal PtCoO$_2$|Pallavi Kushwaha,Philip J. W. Moll,Nabhanila Nandi,Andrew P. Mackenzie###
(409090, 409093)
Crystal growth, resistivity and Hall effect of the delafossite metal PtCoO2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 15, 'K', 3]

PtCoO2
###Crystal growth, resistivity and Hall effect of the delafossite metal PtCoO$_2$|Pallavi Kushwaha,Philip J. W. Moll,Nabhanila Nandi,Andrew P. Mackenzie###
(409114, 409117)
 We report single crystal growth of the delafossite oxide PtCoO2, and basictransport measurements on single crystals etched to well-defined geometriesusing focused ion beam techniques.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 15, 'K', 2]

Pt
###Crystal growth, resistivity and Hall effect of the delafossite metal PtCoO$_2$|Pallavi Kushwaha,Philip J. W. Moll,Nabhanila Nandi,Andrew P. Mackenzie###
(409205, 409205)
 The room temperature resistivity is 2.1muOmega cm, and the Hall coefficient is consistent with the existence ofone free electron per Pt.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 15, 'K', 1]

In
###Current dependence of the huge negative magnetoresistance in high-mobility two-dimensional electron gases|L. Bockhorn,J. Inarrea,R. J. Haug###
(409507, 409507)
 In high-mobility two-dimensional electron gases Landau levels are alreadyformed at very small magnetic field values.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CN
###Fork stamping of pristine carbon nanotubes onto ferromagnetic contacts for spin-valve devices|J. Gramich,A. Baumgartner,M. Muoth,C. Hierold,C. Schönenberger###
(409727, 409728)
 We present a fabrication scheme called fork stamping optimized for the drytransfer of individual pristine carbon nanotubes (CNTs) onto ferromagneticcontact electrodes fabricated by standard lithography.
Featurization terminated normally.
0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CN
###Fork stamping of pristine carbon nanotubes onto ferromagnetic contacts for spin-valve devices|J. Gramich,A. Baumgartner,M. Muoth,C. Hierold,C. Schönenberger###
(409788, 409789)
 We demonstrate thedetailed recipes for a residue-free device fabrication and in-situ currentannealing on suspended CNT<missing VAR> spin-valve devices with ferromagnetic Permalloy (Py)contacts and report preliminary transport characterization andmagnetoresistance experiments at cryogenic temperatures.
Featurization terminated normally.
0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Construction of van der Waals magnetic tunnel junction using ferromagnetic layered dichalcogenide|Miho Arai,Rai Moriya,Naoto Yabuki,Satoru Masubuchi,Keiji Ueno,Tomoki Machida###
(409928, 409928)
 We investigate the micromechanical exfoliation and van der Waals (vdW)assembly of ferromagnetic layered dichalcogenide Fe0.25TaS2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe0.25TaS2
###Construction of van der Waals magnetic tunnel junction using ferromagnetic layered dichalcogenide|Miho Arai,Rai Moriya,Naoto Yabuki,Satoru Masubuchi,Keiji Ueno,Tomoki Machida###
(409942, 409946)
 We investigate the micromechanical exfoliation and van der Waals (vdW)assembly of ferromagnetic layered dichalcogenide Fe0.25TaS2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6153846153846154,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3076923076923077,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Construction of van der Waals magnetic tunnel junction using ferromagnetic layered dichalcogenide|Miho Arai,Rai Moriya,Naoto Yabuki,Satoru Masubuchi,Keiji Ueno,Tomoki Machida###
(409952, 409952)
 The vdW interlayercoupling at the Fe-intercalated plane of Fe0.25TaS2 allows exfoliation offlakes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Construction of van der Waals magnetic tunnel junction using ferromagnetic layered dichalcogenide|Miho Arai,Rai Moriya,Naoto Yabuki,Satoru Masubuchi,Keiji Ueno,Tomoki Machida###
(409963, 409963)
 The vdW interlayercoupling at the Fe-intercalated plane of Fe0.25TaS2 allows exfoliation offlakes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe0.25TaS2
###Construction of van der Waals magnetic tunnel junction using ferromagnetic layered dichalcogenide|Miho Arai,Rai Moriya,Naoto Yabuki,Satoru Masubuchi,Keiji Ueno,Tomoki Machida###
(409971, 409975)
 The vdW interlayercoupling at the Fe-intercalated plane of Fe0.25TaS2 allows exfoliation offlakes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6153846153846154,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3076923076923077,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Construction of van der Waals magnetic tunnel junction using ferromagnetic layered dichalcogenide|Miho Arai,Rai Moriya,Naoto Yabuki,Satoru Masubuchi,Keiji Ueno,Tomoki Machida###
(409990, 409990)
 A vdW junction between the cleaved crystal surfaces is constructed bydry transfer method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Construction of van der Waals magnetic tunnel junction using ferromagnetic layered dichalcogenide|Miho Arai,Rai Moriya,Naoto Yabuki,Satoru Masubuchi,Keiji Ueno,Tomoki Machida###
(410081, 410081)
 We observe tunnel magnetoresistance in the resultingjunction under an external magnetic field applied perpendicular to the plane,demonstrating spin-polarized tunneling between the ferromagnetic layeredmaterial through the vdW junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Multi-Fields Modulation of Physical Properties of Oxide Thin Films|Huali Yang,Baomin Wang,Xiaojian Zhu,Jie Shang,Bin Chen,Run-Wei Li###
(410219, 410219)
In this article, recent studies of the multi-fields modulation of physicalproperties in oxide thin films have been reviewed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Giant thermal magnetoresistance in plasmonic structures|Ivan Latella,Philippe Ben-Abdallah###
(410347, 410347)
 In chains of InSb-Agnanoparticles at room temperature, we found that the resistance can beincreased by almost a factor of 2 with magnetic fields of 2 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 2, 'with', 0],[54.0, 2, 'T', 0]

InSb
###Giant thermal magnetoresistance in plasmonic structures|Ivan Latella,Philippe Ben-Abdallah###
(410353, 410354)
 In chains of InSb-Agnanoparticles at room temperature, we found that the resistance can beincreased by almost a factor of 2 with magnetic fields of 2 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 2, 'with', 0],[47.0, 2, 'T', 0]

Ag
###Giant thermal magnetoresistance in plasmonic structures|Ivan Latella,Philippe Ben-Abdallah###
(410356, 410356)
 In chains of InSb-Agnanoparticles at room temperature, we found that the resistance can beincreased by almost a factor of 2 with magnetic fields of 2 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 2, 'with', 0],[45.0, 2, 'T', 0]

NdSb
###Topological semimetal state and field-induced Fermi surface reconstruction in antiferromagnetic monopnictide NdSb|Yongjian Wang,J. H. Yu,Y. Q. Wang,C. Y. Xi,L. S. Ling,S. L. Zhang,J. R. Wang,Y. M. Xiong,Tao Han,Hui Han,Jun Yang,Jixiang Gong,Lei Luo,W. Tong,Lei Zhang,Zhe Qu,Y. Y. Han,W. K. Zhu,Li Pi,X. G. Wan,Changjin Zhang,Yuheng Zhang###
(410485, 410486)
Topological semimetal state and field-induced Fermi surface reconstruction in antiferromagnetic monopnictide NdSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NdSb
###Topological semimetal state and field-induced Fermi surface reconstruction in antiferromagnetic monopnictide NdSb|Yongjian Wang,J. H. Yu,Y. Q. Wang,C. Y. Xi,L. S. Ling,S. L. Zhang,J. R. Wang,Y. M. Xiong,Tao Han,Hui Han,Jun Yang,Jixiang Gong,Lei Luo,W. Tong,Lei Zhang,Zhe Qu,Y. Y. Han,W. K. Zhu,Li Pi,X. G. Wan,Changjin Zhang,Yuheng Zhang###
(410509, 410510)
 We report the experimental realization of Dirac semimetal state in NdSb, amaterial with antiferromagnetic ground state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Large Tunneling Anisotropic Magnetoresistance mediated by Surface States|Marie Hervé,Timofey Balashov,Arthur Ernst,Wulf Wulfhekel###
(410708, 410708)
 We investigated the tunneling anisotropic magnetoresistance (TAMR) in thickhcp Co films at cryogenic temperatures using scanning tunneling microscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, -350, 'mV', 1],[39.0, 30, '%', 1]

At
###Large Tunneling Anisotropic Magnetoresistance mediated by Surface States|Marie Hervé,Timofey Balashov,Arthur Ernst,Wulf Wulfhekel###
(410727, 410727)
 Ataround -350 mV, a strong TAMR up to 30% is found with a characteristic voltagedependence and a reversal of sign.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, -350, 'mV', 0],[20.0, 30, '%', 0]

PdCoO2
###Unconventional magneto-transport in ultrapure PdCoO2 and PtCoO2|Nabhanila Nandi,Thomas Scaffidi,Pallavi Kushwaha,Seunghyun Khim,Mark E. Barber,Veronika Sunko,Federico Mazzola,Philip D. C. King,Helge Rosner,Philip J. W. Moll,Markus König,Joel E. Moore,Sean Hartnoll,Andrew P. Mackenzie###
(410876, 410879)
Unconventional magneto-transport in ultrapure PdCoO2 and PtCoO2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PtCoO2
###Unconventional magneto-transport in ultrapure PdCoO2 and PtCoO2|Nabhanila Nandi,Thomas Scaffidi,Pallavi Kushwaha,Seunghyun Khim,Mark E. Barber,Veronika Sunko,Federico Mazzola,Philip D. C. King,Helge Rosner,Philip J. W. Moll,Markus König,Joel E. Moore,Sean Hartnoll,Andrew P. Mackenzie###
(410883, 410886)
Unconventional magneto-transport in ultrapure PdCoO2 and PtCoO2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PdCoO2
###Unconventional magneto-transport in ultrapure PdCoO2 and PtCoO2|Nabhanila Nandi,Thomas Scaffidi,Pallavi Kushwaha,Seunghyun Khim,Mark E. Barber,Veronika Sunko,Federico Mazzola,Philip D. C. King,Helge Rosner,Philip J. W. Moll,Markus König,Joel E. Moore,Sean Hartnoll,Andrew P. Mackenzie###
(410917, 410920)
 We have studied magneto transport in the single-band, quasi-two-dimensionalmetals PdCoO2 and PtCoO2, which have extremely long mean free paths.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PtCoO2
###Unconventional magneto-transport in ultrapure PdCoO2 and PtCoO2|Nabhanila Nandi,Thomas Scaffidi,Pallavi Kushwaha,Seunghyun Khim,Mark E. Barber,Veronika Sunko,Federico Mazzola,Philip D. C. King,Helge Rosner,Philip J. W. Moll,Markus König,Joel E. Moore,Sean Hartnoll,Andrew P. Mackenzie###
(410924, 410927)
 We have studied magneto transport in the single-band, quasi-two-dimensionalmetals PdCoO2 and PtCoO2, which have extremely long mean free paths.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Tuning effective hyperfine fields in PEDOT:PSS thin films by doping|M. Y. Teferi,J. Ogle,G. Joshi,H. Malissa,S. Jamali,D. L. Baird,J. M. Lupton,L. Whittaker Brooks,C. Boehme###
(411083, 411083)
Tuning effective hyperfine fields in PEDOT<missing VAR>PSS thin films by doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 3, ',', 1]

O
###Tuning effective hyperfine fields in PEDOT:PSS thin films by doping|M. Y. Teferi,J. Ogle,G. Joshi,H. Malissa,S. Jamali,D. L. Baird,J. M. Lupton,L. Whittaker Brooks,C. Boehme###
(411086, 411086)
Tuning effective hyperfine fields in PEDOT<missing VAR>PSS thin films by doping.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 3, ',', 1]

PSS
###Tuning effective hyperfine fields in PEDOT:PSS thin films by doping|M. Y. Teferi,J. Ogle,G. Joshi,H. Malissa,S. Jamali,D. L. Baird,J. M. Lupton,L. Whittaker Brooks,C. Boehme###
(411088, 411090)
Tuning effective hyperfine fields in PEDOT<missing VAR>PSS thin films by doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 3, ',', 1]

P
###Tuning effective hyperfine fields in PEDOT:PSS thin films by doping|M. Y. Teferi,J. Ogle,G. Joshi,H. Malissa,S. Jamali,D. L. Baird,J. M. Lupton,L. Whittaker Brooks,C. Boehme###
(411146, 411146)
 Using electrically detected magnetic resonance spectroscopy, we demonstratethat doping the conducting polymerpoly(3,4-ethylenedioxythiophene)poly(styrene-sulfonate) (PEDOT<missing VAR>PSS) withethylene glycol allows for the control of effective local charge carrierhyperfine fields through motional narrowing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 3, ',', 0]

O
###Tuning effective hyperfine fields in PEDOT:PSS thin films by doping|M. Y. Teferi,J. Ogle,G. Joshi,H. Malissa,S. Jamali,D. L. Baird,J. M. Lupton,L. Whittaker Brooks,C. Boehme###
(411149, 411149)
 Using electrically detected magnetic resonance spectroscopy, we demonstratethat doping the conducting polymerpoly(3,4-ethylenedioxythiophene)poly(styrene-sulfonate) (PEDOT<missing VAR>PSS) withethylene glycol allows for the control of effective local charge carrierhyperfine fields through motional narrowing.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 3, ',', 0]

S
###Tuning effective hyperfine fields in PEDOT:PSS thin films by doping|M. Y. Teferi,J. Ogle,G. Joshi,H. Malissa,S. Jamali,D. L. Baird,J. M. Lupton,L. Whittaker Brooks,C. Boehme###
(411153, 411153)
 Using electrically detected magnetic resonance spectroscopy, we demonstratethat doping the conducting polymerpoly(3,4-ethylenedioxythiophene)poly(styrene-sulfonate) (PEDOT<missing VAR>PSS) withethylene glycol allows for the control of effective local charge carrierhyperfine fields through motional narrowing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 3, ',', 0]

HgTe
###Spin Polarization Phenomena and Pseudospin Quantum Hall Ferromagnetism in the HgTe Quantum Well|M. V. Yakunin,A. V. Suslov,S. M. Podgornykh,S. A. Dvoretsky,N. N. Mikhailov###
(411286, 411287)
Spin Polarization Phenomena and Pseudospin Quantum Hall Ferromagnetism in the HgTe Quantum Well.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HgTe
###Spin Polarization Phenomena and Pseudospin Quantum Hall Ferromagnetism in the HgTe Quantum Well|M. V. Yakunin,A. V. Suslov,S. M. Podgornykh,S. A. Dvoretsky,N. N. Mikhailov###
(411334, 411335)
 The parallel field of a full spin polarization of the electron gas in aGamma8 conduction band of the HgTe quantum well was obtained from themagnetoresistance by three different ways in a zero and quasi-classical rangeof perpendicular field component Bper.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin Polarization Phenomena and Pseudospin Quantum Hall Ferromagnetism in the HgTe Quantum Well|M. V. Yakunin,A. V. Suslov,S. M. Podgornykh,S. A. Dvoretsky,N. N. Mikhailov###
(411386, 411386)
 In the quantum Hall range of Bper thespin polarization manifests in anticrossings of magnetic levels, which werefound to strongly nonmonotonously depend on Bper.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Au/YI
###Intrinsic Spin Seebeck Effect in Au/YIG|D. Qu,S. Y. Huang,Jun Hu,Ruqian Wu,C. L. Chien###
(411458, 411461)
Intrinsic Spin Seebeck Effect in Au/YIG<missing VAR>.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Pt/YI
###Intrinsic Spin Seebeck Effect in Au/YIG|D. Qu,S. Y. Huang,Jun Hu,Ruqian Wu,C. L. Chien###
(411477, 411480)
 The acute magnetic proximity effects in Pt/YIG<missing VAR> compromise the suitability ofPt as a spin current detector.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Pt
###Intrinsic Spin Seebeck Effect in Au/YIG|D. Qu,S. Y. Huang,Jun Hu,Ruqian Wu,C. L. Chien###
(411492, 411492)
 The acute magnetic proximity effects in Pt/YIG<missing VAR> compromise the suitability ofPt as a spin current detector.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Au/YI
###Intrinsic Spin Seebeck Effect in Au/YIG|D. Qu,S. Y. Huang,Jun Hu,Ruqian Wu,C. L. Chien###
(411511, 411514)
 We show that Au/YIG<missing VAR>, with no anomalous Halleffect and a negligible magnetoresistance, allows the measurements of theintrinsic spin Seebeck effect with a magnitude much smaller than that inPt/YIG<missing VAR>.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Pt/YI
###Intrinsic Spin Seebeck Effect in Au/YIG|D. Qu,S. Y. Huang,Jun Hu,Ruqian Wu,C. L. Chien###
(411574, 411577)
 We show that Au/YIG<missing VAR>, with no anomalous Halleffect and a negligible magnetoresistance, allows the measurements of theintrinsic spin Seebeck effect with a magnitude much smaller than that inPt/YIG<missing VAR>.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Pt
###Intrinsic Spin Seebeck Effect in Au/YIG|D. Qu,S. Y. Huang,Jun Hu,Ruqian Wu,C. L. Chien###
(411608, 411608)
 The experiment results are consistent with the spin-polarizeddensity-functional calculations for Pt with a sizable and Au with a negligiblemagnetic moment near the interface with YIG<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Au
###Intrinsic Spin Seebeck Effect in Au/YIG|D. Qu,S. Y. Huang,Jun Hu,Ruqian Wu,C. L. Chien###
(411618, 411618)
 The experiment results are consistent with the spin-polarizeddensity-functional calculations for Pt with a sizable and Au with a negligiblemagnetic moment near the interface with YIG<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YI
###Intrinsic Spin Seebeck Effect in Au/YIG|D. Qu,S. Y. Huang,Jun Hu,Ruqian Wu,C. L. Chien###
(411639, 411640)
 The experiment results are consistent with the spin-polarizeddensity-functional calculations for Pt with a sizable and Au with a negligiblemagnetic moment near the interface with YIG<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Linear magnetoresistance from Dirac-like fermions in graphite|Hridis K. Pal,Dmitrii L. Maslov###
(411895, 411895)
 We show that magnetoresistance of Bernal-stacked graphite (with the magneticfield bf B parallel to the c<missing VAR>-axis and the current in the ab plane) scaleslinearly with the magnetic field over an interval of classically weak fields.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Linear magnetoresistance from Dirac-like fermions in graphite|Hridis K. Pal,Dmitrii L. Maslov###
(411983, 411983)
The linearity is related to the presence of extremely light, Dirac-likecarriers near the H (Hprime)- points of the Brillouin zone.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Linear magnetoresistance from Dirac-like fermions in graphite|Hridis K. Pal,Dmitrii L. Maslov###
(411986, 411986)
The linearity is related to the presence of extremely light, Dirac-likecarriers near the H (Hprime)- points of the Brillouin zone.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Linear magnetoresistance from Dirac-like fermions in graphite|Hridis K. Pal,Dmitrii L. Maslov###
(412026, 412026)
 The Hallresistivity in this interval also shows a non-analytic, Bln B behavior,and is dominated by holes.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Linear magnetoresistance from Dirac-like fermions in graphite|Hridis K. Pal,Dmitrii L. Maslov###
(412029, 412029)
 The Hallresistivity in this interval also shows a non-analytic, Bln B behavior,and is dominated by holes.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TaAs
###Signature of chiral fermion instability in the Weyl semimetal TaAs above the quantum limit|Cheng-Long Zhang,Bingbing Tong,Zhujun Yuan,Ziquan Lin,Junfeng Wang,Jinglei Zhang,Chuan-Ying Xi,Zhong Wang,Shuang Jia,Chi Zhang###
(412072, 412073)
Signature of chiral fermion instability in the Weyl semimetal TaAs above the quantum limit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TaAs
###Signature of chiral fermion instability in the Weyl semimetal TaAs above the quantum limit|Cheng-Long Zhang,Bingbing Tong,Zhujun Yuan,Ziquan Lin,Junfeng Wang,Jinglei Zhang,Chuan-Ying Xi,Zhong Wang,Shuang Jia,Chi Zhang###
(412102, 412103)
 We report the electrical transport properties for Weyl semimetal TaAs in anintense magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TaAs
###Signature of chiral fermion instability in the Weyl semimetal TaAs above the quantum limit|Cheng-Long Zhang,Bingbing Tong,Zhujun Yuan,Ziquan Lin,Junfeng Wang,Jinglei Zhang,Chuan-Ying Xi,Zhong Wang,Shuang Jia,Chi Zhang###
(412215, 412216)
 Our measurements show that the Weyl semimetal TaAs in theultraquantum regime provides a good platform for studying electron-electroninteraction in topological nontrivial semimetals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs/AlGaAs
###Frequency-dependent polarization-angle-phase-shift in the microwave-induced magnetoresistance oscillations|Han-Chun Liu,Tianyu Ye,W. Wegscheider,R. G. Mani###
(412329, 412334)
 Linear polarization angle, theta, dependent measurements of the microwaveradiation-induced oscillatory magnetoresistance, R<missing VAR>xx, in high mobilityGaAs/AlGaAs 2D electron devices have shown a theta dependence in theoscillatory amplitude along with magnetic field, frequency, andextrema-dependent phase shifts, theta0.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[1.0, 2, 'D', 0]

Bi2Te3
###Superconducting-contact-induced resistance-anomalies in the 3D topological insulator Bi2Te3|Zhuo Wang,Tianyu Ye,R. G. Mani###
(412484, 412487)
Superconducting-contact-induced resistance-anomalies in the 3D topological insulator Bi2Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 3, 'D', 0],[83.0, 3.4, 'K', 1],[157.0, 2, 'D', 2]

I
###Superconducting-contact-induced resistance-anomalies in the 3D topological insulator Bi2Te3|Zhuo Wang,Tianyu Ye,R. G. Mani###
(412522, 412522)
 This study examines the magnetotransport response observed in flakes of the3D<missing VAR> topological insulator (T<missing VAR>I) Bi2Te3, including indium superconductingelectrodes, and demonstrates two critical transitions in the magnetoresistiveresponse with decreasing temperatures below T<missing VAR>  3.4K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 3, 'D', 1],[48.0, 3.4, 'K', 0],[122.0, 2, 'D', 1]

Bi2Te3
###Superconducting-contact-induced resistance-anomalies in the 3D topological insulator Bi2Te3|Zhuo Wang,Tianyu Ye,R. G. Mani###
(412525, 412528)
 This study examines the magnetotransport response observed in flakes of the3D<missing VAR> topological insulator (T<missing VAR>I) Bi2Te3, including indium superconductingelectrodes, and demonstrates two critical transitions in the magnetoresistiveresponse with decreasing temperatures below T<missing VAR>  3.4K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 3, 'D', 1],[42.0, 3.4, 'K', 0],[116.0, 2, 'D', 1]

I
###Superconducting-contact-induced resistance-anomalies in the 3D topological insulator Bi2Te3|Zhuo Wang,Tianyu Ye,R. G. Mani###
(412658, 412658)
 The first transition isattributed to superconductivity in the indium electrodes, and the secondtransition, with a critical field exceeding the transition field of indium, isattributed to a proximity effect at the 2D planar interface of this hybridT<missing VAR>I/superconductor structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[180.0, 3, 'D', 2],[88.0, 3.4, 'K', 1],[14.0, 2, 'D', 0]

BaCo2O5.5
###Microscopic Evidence of Spin State Order and Spin State Phase Separation in Layered Cobaltites RBaCo2O5.5 with R=Y, Tb, Dy, and Ho|H. Luetkens,M. Stingaciu,Yu. G. Pashkevich,K. Conder,E. Pomjakushina,A. A. Gusev,K. V. Lamonova,P. Lemmens,H. -H. Klauss###
(412702, 412706)
Microscopic Evidence of Spin State Order and Spin State Phase Separation in Layered Cobaltites R<missing VAR>BaCo2O5.5 with R<missing VAR>Y, Tb, Dy, and Ho.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6470588235294118,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23529411764705882,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.11764705882352941,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 300, 'K', 2]

Y
###Microscopic Evidence of Spin State Order and Spin State Phase Separation in Layered Cobaltites RBaCo2O5.5 with R=Y, Tb, Dy, and Ho|H. Luetkens,M. Stingaciu,Yu. G. Pashkevich,K. Conder,E. Pomjakushina,A. A. Gusev,K. V. Lamonova,P. Lemmens,H. -H. Klauss###
(412711, 412711)
Microscopic Evidence of Spin State Order and Spin State Phase Separation in Layered Cobaltites R<missing VAR>BaCo2O5.5 with R<missing VAR>Y, Tb, Dy, and Ho.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 300, 'K', 2]

Tb
###Microscopic Evidence of Spin State Order and Spin State Phase Separation in Layered Cobaltites RBaCo2O5.5 with R=Y, Tb, Dy, and Ho|H. Luetkens,M. Stingaciu,Yu. G. Pashkevich,K. Conder,E. Pomjakushina,A. A. Gusev,K. V. Lamonova,P. Lemmens,H. -H. Klauss###
(412714, 412714)
Microscopic Evidence of Spin State Order and Spin State Phase Separation in Layered Cobaltites R<missing VAR>BaCo2O5.5 with R<missing VAR>Y, Tb, Dy, and Ho.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 300, 'K', 2]

Dy
###Microscopic Evidence of Spin State Order and Spin State Phase Separation in Layered Cobaltites RBaCo2O5.5 with R=Y, Tb, Dy, and Ho|H. Luetkens,M. Stingaciu,Yu. G. Pashkevich,K. Conder,E. Pomjakushina,A. A. Gusev,K. V. Lamonova,P. Lemmens,H. -H. Klauss###
(412717, 412717)
Microscopic Evidence of Spin State Order and Spin State Phase Separation in Layered Cobaltites R<missing VAR>BaCo2O5.5 with R<missing VAR>Y, Tb, Dy, and Ho.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 300, 'K', 2]

Ho
###Microscopic Evidence of Spin State Order and Spin State Phase Separation in Layered Cobaltites RBaCo2O5.5 with R=Y, Tb, Dy, and Ho|H. Luetkens,M. Stingaciu,Yu. G. Pashkevich,K. Conder,E. Pomjakushina,A. A. Gusev,K. V. Lamonova,P. Lemmens,H. -H. Klauss###
(412722, 412722)
Microscopic Evidence of Spin State Order and Spin State Phase Separation in Layered Cobaltites R<missing VAR>BaCo2O5.5 with R<missing VAR>Y, Tb, Dy, and Ho.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 300, 'K', 2]

BaCo2O5.5
###Microscopic Evidence of Spin State Order and Spin State Phase Separation in Layered Cobaltites RBaCo2O5.5 with R=Y, Tb, Dy, and Ho|H. Luetkens,M. Stingaciu,Yu. G. Pashkevich,K. Conder,E. Pomjakushina,A. A. Gusev,K. V. Lamonova,P. Lemmens,H. -H. Klauss###
(412749, 412753)
 We report muon spin relaxation measurements on the magnetic structures ofR<missing VAR>BaCo2O5.5 with R<missing VAR>Y, Tb, Dy, and Ho.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6470588235294118,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23529411764705882,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.11764705882352941,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 300, 'K', 1]

Y
###Microscopic Evidence of Spin State Order and Spin State Phase Separation in Layered Cobaltites RBaCo2O5.5 with R=Y, Tb, Dy, and Ho|H. Luetkens,M. Stingaciu,Yu. G. Pashkevich,K. Conder,E. Pomjakushina,A. A. Gusev,K. V. Lamonova,P. Lemmens,H. -H. Klauss###
(412758, 412758)
 We report muon spin relaxation measurements on the magnetic structures ofR<missing VAR>BaCo2O5.5 with R<missing VAR>Y, Tb, Dy, and Ho.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 300, 'K', 1]

Tb
###Microscopic Evidence of Spin State Order and Spin State Phase Separation in Layered Cobaltites RBaCo2O5.5 with R=Y, Tb, Dy, and Ho|H. Luetkens,M. Stingaciu,Yu. G. Pashkevich,K. Conder,E. Pomjakushina,A. A. Gusev,K. V. Lamonova,P. Lemmens,H. -H. Klauss###
(412761, 412761)
 We report muon spin relaxation measurements on the magnetic structures ofR<missing VAR>BaCo2O5.5 with R<missing VAR>Y, Tb, Dy, and Ho.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 300, 'K', 1]

Dy
###Microscopic Evidence of Spin State Order and Spin State Phase Separation in Layered Cobaltites RBaCo2O5.5 with R=Y, Tb, Dy, and Ho|H. Luetkens,M. Stingaciu,Yu. G. Pashkevich,K. Conder,E. Pomjakushina,A. A. Gusev,K. V. Lamonova,P. Lemmens,H. -H. Klauss###
(412764, 412764)
 We report muon spin relaxation measurements on the magnetic structures ofR<missing VAR>BaCo2O5.5 with R<missing VAR>Y, Tb, Dy, and Ho.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 300, 'K', 1]

Ho
###Microscopic Evidence of Spin State Order and Spin State Phase Separation in Layered Cobaltites RBaCo2O5.5 with R=Y, Tb, Dy, and Ho|H. Luetkens,M. Stingaciu,Yu. G. Pashkevich,K. Conder,E. Pomjakushina,A. A. Gusev,K. V. Lamonova,P. Lemmens,H. -H. Klauss###
(412769, 412769)
 We report muon spin relaxation measurements on the magnetic structures ofR<missing VAR>BaCo2O5.5 with R<missing VAR>Y, Tb, Dy, and Ho.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 300, 'K', 1]

Co3
###Microscopic Evidence of Spin State Order and Spin State Phase Separation in Layered Cobaltites RBaCo2O5.5 with R=Y, Tb, Dy, and Ho|H. Luetkens,M. Stingaciu,Yu. G. Pashkevich,K. Conder,E. Pomjakushina,A. A. Gusev,K. V. Lamonova,P. Lemmens,H. -H. Klauss###
(412833, 412834)
 Theyconsist of different ordered spin state arrangements of high-, intermediate-,and low-spin Co3 of CoO6 octahedra.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 300, 'K', 1]

CoO6
###Microscopic Evidence of Spin State Order and Spin State Phase Separation in Layered Cobaltites RBaCo2O5.5 with R=Y, Tb, Dy, and Ho|H. Luetkens,M. Stingaciu,Yu. G. Pashkevich,K. Conder,E. Pomjakushina,A. A. Gusev,K. V. Lamonova,P. Lemmens,H. -H. Klauss###
(412838, 412840)
 Theyconsist of different ordered spin state arrangements of high-, intermediate-,and low-spin Co3 of CoO6 octahedra.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 300, 'K', 1]

F
###Microscopic Evidence of Spin State Order and Spin State Phase Separation in Layered Cobaltites RBaCo2O5.5 with R=Y, Tb, Dy, and Ho|H. Luetkens,M. Stingaciu,Yu. G. Pashkevich,K. Conder,E. Pomjakushina,A. A. Gusev,K. V. Lamonova,P. Lemmens,H. -H. Klauss###
(412903, 412903)
 The unusual strongly anisotropic magnetoresistance and its onset at theFM<missing VAR>-AFM<missing VAR> phase boundary is explained.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 300, 'K', 3]

F
###Microscopic Evidence of Spin State Order and Spin State Phase Separation in Layered Cobaltites RBaCo2O5.5 with R=Y, Tb, Dy, and Ho|H. Luetkens,M. Stingaciu,Yu. G. Pashkevich,K. Conder,E. Pomjakushina,A. A. Gusev,K. V. Lamonova,P. Lemmens,H. -H. Klauss###
(412907, 412907)
 The unusual strongly anisotropic magnetoresistance and its onset at theFM<missing VAR>-AFM<missing VAR> phase boundary is explained.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 300, 'K', 3]

B
###Novel Radiation-induced Magnetoresistance Oscillations in a Nondegenerate 2DES on Liquid Helium|Denis Konstantinov,Kimitoshi Kono###
(413202, 413202)
 The oscillations are periodic in 1/B andoriginate from the scattering-mediated transitions of the excited electronsinto the Landau states of the first subband.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 2, 'DES', 2],[32.0, 2, 'D', 1]

As
###Spin-current vortices in current-perpendicular-to-plane nanoconstricted spin-valves|N. Strelkov,A. Vedyayev,N. Ryzhanova,D. Gusakova,L. D. Buda-Prejbeanu,M. Chshiev,S. Amara,N. de Mestier,C. Baraduc,B. Dieny###
(413388, 413388)
 As anillustration, spin-dependent transport through a non-magnetic nanoconstrictionseparating two magnetic layers was investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe1
###Field-Induced Magnetostructural Transitions in Antiferromagnetic Fe1+yTe1-xSx|Masashi Tokunaga,Takumi Kihara,Yoshikazu Mizuguchi,Yoshihiko Takano###
(413515, 413516)
Field-Induced Magnetostructural Transitions in Antiferromagnetic Fe1y<missing VAR>Te1-xSx.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 0, ',', 1],[35.0, 0.05, ',', 1],[61.0, 65, 'T', 1]

Te1-x
###Field-Induced Magnetostructural Transitions in Antiferromagnetic Fe1+yTe1-xSx|Masashi Tokunaga,Takumi Kihara,Yoshikazu Mizuguchi,Yoshihiko Takano###
(413518, 413521)
Field-Induced Magnetostructural Transitions in Antiferromagnetic Fe1y<missing VAR>Te1-xSx.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[27.0, 0, ',', 1],[30.0, 0.05, ',', 1],[56.0, 65, 'T', 1]

Fe1
###Field-Induced Magnetostructural Transitions in Antiferromagnetic Fe1+yTe1-xSx|Masashi Tokunaga,Takumi Kihara,Yoshikazu Mizuguchi,Yoshihiko Takano###
(413537, 413538)
 The transport and structural properties of Fe1y<missing VAR>Te1-xSx (x<missing VAR>0, 0.05, and 0.10)crystals were studied in pulsed magnetic fields up to 65 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 0, ',', 0],[13.0, 0.05, ',', 0],[39.0, 65, 'T', 0]

Te1-x
###Field-Induced Magnetostructural Transitions in Antiferromagnetic Fe1+yTe1-xSx|Masashi Tokunaga,Takumi Kihara,Yoshikazu Mizuguchi,Yoshihiko Takano###
(413540, 413543)
 The transport and structural properties of Fe1y<missing VAR>Te1-xSx (x<missing VAR>0, 0.05, and 0.10)crystals were studied in pulsed magnetic fields up to 65 T.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[5.0, 0, ',', 0],[8.0, 0.05, ',', 0],[34.0, 65, 'T', 0]

SrRuO3
###Giant electroresistance and tunable magnetoelectricity in a multiferroic junction|Francesco Ricci,Alessio Filippetti,Vincenzo Fiorentini###
(413731, 413734)
 First-principles density functional calculations show that thetextrmSrRuO3/textrmPbTiO3/textrmSrRuO3 multiferroicjunction with asymmetric (RuO2/PbO and TiO2/SrO) interfaces has alarge ferroelectric depolarizing field, whose switching changes the interfacetransmission probabilities for tunneling electrons, leading toelectroresistance modulation over several orders of magnitude.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PbTiO3
###Giant electroresistance and tunable magnetoelectricity in a multiferroic junction|Francesco Ricci,Alessio Filippetti,Vincenzo Fiorentini###
(413737, 413740)
 First-principles density functional calculations show that thetextrmSrRuO3/textrmPbTiO3/textrmSrRuO3 multiferroicjunction with asymmetric (RuO2/PbO and TiO2/SrO) interfaces has alarge ferroelectric depolarizing field, whose switching changes the interfacetransmission probabilities for tunneling electrons, leading toelectroresistance modulation over several orders of magnitude.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrRuO3
###Giant electroresistance and tunable magnetoelectricity in a multiferroic junction|Francesco Ricci,Alessio Filippetti,Vincenzo Fiorentini###
(413743, 413746)
 First-principles density functional calculations show that thetextrmSrRuO3/textrmPbTiO3/textrmSrRuO3 multiferroicjunction with asymmetric (RuO2/PbO and TiO2/SrO) interfaces has alarge ferroelectric depolarizing field, whose switching changes the interfacetransmission probabilities for tunneling electrons, leading toelectroresistance modulation over several orders of magnitude.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

RuO2/PbO
###Giant electroresistance and tunable magnetoelectricity in a multiferroic junction|Francesco Ricci,Alessio Filippetti,Vincenzo Fiorentini###
(413758, 413763)
 First-principles density functional calculations show that thetextrmSrRuO3/textrmPbTiO3/textrmSrRuO3 multiferroicjunction with asymmetric (RuO2/PbO and TiO2/SrO) interfaces has alarge ferroelectric depolarizing field, whose switching changes the interfacetransmission probabilities for tunneling electrons, leading toelectroresistance modulation over several orders of magnitude.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

O
###Giant electroresistance and tunable magnetoelectricity in a multiferroic junction|Francesco Ricci,Alessio Filippetti,Vincenzo Fiorentini###
(413772, 413772)
 First-principles density functional calculations show that thetextrmSrRuO3/textrmPbTiO3/textrmSrRuO3 multiferroicjunction with asymmetric (RuO2/PbO and TiO2/SrO) interfaces has alarge ferroelectric depolarizing field, whose switching changes the interfacetransmission probabilities for tunneling electrons, leading toelectroresistance modulation over several orders of magnitude.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ErNiSi
###Field induced large magnetocaloric effect and magnetoresistance in ErNiSi|Sachin Gupta,R. Rawat,K. G. Suresh###
(413919, 413921)
Field induced large magnetocaloric effect and magnetoresistance in ErNiSi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 50, 'kOe', 3],[128.0, 19.1, 'J', 3]

ErNiSi
###Field induced large magnetocaloric effect and magnetoresistance in ErNiSi|Sachin Gupta,R. Rawat,K. G. Suresh###
(413964, 413966)
 Large magnetocaloric effect (MCE) and magnetoresistance (MR) together withnegligible hysteresis loss has been observed in ErNiSi compound, whichundergoes metamagnetic transition at low temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 50, 'kOe', 2],[83.0, 19.1, 'J', 2]

K
###Field induced large magnetocaloric effect and magnetoresistance in ErNiSi|Sachin Gupta,R. Rawat,K. G. Suresh###
(414053, 414053)
 Themaximum value of isothermal entropy change and MR for a field change of 50 kOeare found to be 19.1 J/kg K and -34 %.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 50, 'kOe', 0],[4.0, 19.1, 'J', 0]

WTe2
###Titanic Magnetoresistance in WTe2|Mazhar N. Ali,Jun Xiong,Steven Flynn,Quinn Gibson,Leslie Schoop,Neel Haldolaarachchige,N. P. Ong,Jing Tao,R. J. Cava###
(414116, 414118)
Titanic Magnetoresistance in WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 1, ',', 2],[115.0, 2, ',', 2],[122.0, 3, ',', 2],[127.0, 4, ',', 2],[155.0, 5, ',', 2],[157.0, 6.0, 'Here', 2],[215.0, 452, ',', 2],[222.0, 4.5, 'Kelvin', 2],[233.0, 14.7, 'Tesla', 2],[246.0, 0.4, 'Kelvin', 2],[249.0, 45, 'Tesla', 2],[443.0, 60, 'T', 6],[460.0, 13, 'million', 6],[466.0, 0.5, 'K', 6]

In
###Titanic Magnetoresistance in WTe2|Mazhar N. Ali,Jun Xiong,Steven Flynn,Quinn Gibson,Leslie Schoop,Neel Haldolaarachchige,N. P. Ong,Jing Tao,R. J. Cava###
(414156, 414156)
 In addition to its intrinsic scientificinterest, it is a technologically important property, placing it in Pasteurs<missing VAR>quadrant of research value materials with large magnetorsistance have founduse as magnetic sensors 1, in magnetic memory 2, hard drives 3, transistors 4,and are the subject of frequent study in the field of spintronics 5, 6. Here wereport the observation of an extremely large one-dimensional positivemagnetoresistance (XMR) in the layered transition metal dichalcogenide (TMD)WTe2; 452,700 percent at 4.5 Kelvin in a magnetic field of 14.7 Tesla, and 2.5million percent at 0.4 Kelvin in 45 Tesla, with no saturation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 1, ',', 0],[77.0, 2, ',', 0],[84.0, 3, ',', 0],[89.0, 4, ',', 0],[117.0, 5, ',', 0],[119.0, 6.0, 'Here', 0],[177.0, 452, ',', 0],[184.0, 4.5, 'Kelvin', 0],[195.0, 14.7, 'Tesla', 0],[208.0, 0.4, 'Kelvin', 0],[211.0, 45, 'Tesla', 0],[405.0, 60, 'T', 4],[422.0, 13, 'million', 4],[428.0, 0.5, 'K', 4]

WTe2
###Titanic Magnetoresistance in WTe2|Mazhar N. Ali,Jun Xiong,Steven Flynn,Quinn Gibson,Leslie Schoop,Neel Haldolaarachchige,N. P. Ong,Jing Tao,R. J. Cava###
(414328, 414330)
 In addition to its intrinsic scientificinterest, it is a technologically important property, placing it in Pasteurs<missing VAR>quadrant of research value materials with large magnetorsistance have founduse as magnetic sensors 1, in magnetic memory 2, hard drives 3, transistors 4,and are the subject of frequent study in the field of spintronics 5, 6. Here wereport the observation of an extremely large one-dimensional positivemagnetoresistance (XMR) in the layered transition metal dichalcogenide (TMD)WTe2; 452,700 percent at 4.5 Kelvin in a magnetic field of 14.7 Tesla, and 2.5million percent at 0.4 Kelvin in 45 Tesla, with no saturation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 1, ',', 0],[95.0, 2, ',', 0],[88.0, 3, ',', 0],[83.0, 4, ',', 0],[55.0, 5, ',', 0],[53.0, 6.0, 'Here', 0],[3.0, 452, ',', 0],[10.0, 4.5, 'Kelvin', 0],[21.0, 14.7, 'Tesla', 0],[34.0, 0.4, 'Kelvin', 0],[37.0, 45, 'Tesla', 0],[231.0, 60, 'T', 4],[248.0, 13, 'million', 4],[254.0, 0.5, 'K', 4]

WTe2
###Titanic Magnetoresistance in WTe2|Mazhar N. Ali,Jun Xiong,Steven Flynn,Quinn Gibson,Leslie Schoop,Neel Haldolaarachchige,N. P. Ong,Jing Tao,R. J. Cava###
(414473, 414475)
 Thedetermination of the origin of this effect and the fabrication ofnanostructures and devices based on the XMR of WTe2 will represent asignificant new direction in the study and uses of magnetoresistivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[249.0, 1, ',', 2],[240.0, 2, ',', 2],[233.0, 3, ',', 2],[228.0, 4, ',', 2],[200.0, 5, ',', 2],[198.0, 6.0, 'Here', 2],[140.0, 452, ',', 2],[133.0, 4.5, 'Kelvin', 2],[122.0, 14.7, 'Tesla', 2],[109.0, 0.4, 'Kelvin', 2],[106.0, 45, 'Tesla', 2],[86.0, 60, 'T', 2],[103.0, 13, 'million', 2],[109.0, 0.5, 'K', 2]

WTe2
###Titanic Magnetoresistance in WTe2|Mazhar N. Ali,Jun Xiong,Steven Flynn,Quinn Gibson,Leslie Schoop,Neel Haldolaarachchige,N. P. Ong,Jing Tao,R. J. Cava###
(414572, 414574)
  This paper has been published with new MR data to 60T where the MR of WTe2reaches 13 million percent (at 0.5K) and still shows no signs of saturation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[348.0, 1, ',', 4],[339.0, 2, ',', 4],[332.0, 3, ',', 4],[327.0, 4, ',', 4],[299.0, 5, ',', 4],[297.0, 6.0, 'Here', 4],[239.0, 452, ',', 4],[232.0, 4.5, 'Kelvin', 4],[221.0, 14.7, 'Tesla', 4],[208.0, 0.4, 'Kelvin', 4],[205.0, 45, 'Tesla', 4],[11.0, 60, 'T', 0],[4.0, 13, 'million', 0],[10.0, 0.5, 'K', 0]

K
###Titanic Magnetoresistance in WTe2|Mazhar N. Ali,Jun Xiong,Steven Flynn,Quinn Gibson,Leslie Schoop,Neel Haldolaarachchige,N. P. Ong,Jing Tao,R. J. Cava###
(414625, 414625)
 Wealso have new electron diffraction patterns to lower temperature (10K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[401.0, 1, ',', 5],[392.0, 2, ',', 5],[385.0, 3, ',', 5],[380.0, 4, ',', 5],[352.0, 5, ',', 5],[350.0, 6.0, 'Here', 5],[292.0, 452, ',', 5],[285.0, 4.5, 'Kelvin', 5],[274.0, 14.7, 'Tesla', 5],[261.0, 0.4, 'Kelvin', 5],[258.0, 45, 'Tesla', 5],[64.0, 60, 'T', 1],[47.0, 13, 'million', 1],[41.0, 0.5, 'K', 1]

WTe2
###Titanic Magnetoresistance in WTe2|Mazhar N. Ali,Jun Xiong,Steven Flynn,Quinn Gibson,Leslie Schoop,Neel Haldolaarachchige,N. P. Ong,Jing Tao,R. J. Cava###
(414706, 414708)
 This makes WTe2, possibly, the firstrealization of a perfectly balanced semimetal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[482.0, 1, ',', 7],[473.0, 2, ',', 7],[466.0, 3, ',', 7],[461.0, 4, ',', 7],[433.0, 5, ',', 7],[431.0, 6.0, 'Here', 7],[373.0, 452, ',', 7],[366.0, 4.5, 'Kelvin', 7],[355.0, 14.7, 'Tesla', 7],[342.0, 0.4, 'Kelvin', 7],[339.0, 45, 'Tesla', 7],[145.0, 60, 'T', 3],[128.0, 13, 'million', 3],[122.0, 0.5, 'K', 3]

WTe2
###Titanic Magnetoresistance in WTe2|Mazhar N. Ali,Jun Xiong,Steven Flynn,Quinn Gibson,Leslie Schoop,Neel Haldolaarachchige,N. P. Ong,Jing Tao,R. J. Cava###
(414755, 414757)
  The paper is published as Large non-saturating magnetoresistance in WTe2in Nature (2014), D<missing VAR>OI10.1038/nature13763<missing PERIOD>
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[531.0, 1, ',', 8],[522.0, 2, ',', 8],[515.0, 3, ',', 8],[510.0, 4, ',', 8],[482.0, 5, ',', 8],[480.0, 6.0, 'Here', 8],[422.0, 452, ',', 8],[415.0, 4.5, 'Kelvin', 8],[404.0, 14.7, 'Tesla', 8],[391.0, 0.4, 'Kelvin', 8],[388.0, 45, 'Tesla', 8],[194.0, 60, 'T', 4],[177.0, 13, 'million', 4],[171.0, 0.5, 'K', 4]

OI10.1038
###Titanic Magnetoresistance in WTe2|Mazhar N. Ali,Jun Xiong,Steven Flynn,Quinn Gibson,Leslie Schoop,Neel Haldolaarachchige,N. P. Ong,Jing Tao,R. J. Cava###
(414770, 414772)
  The paper is published as Large non-saturating magnetoresistance in WTe2in Nature (2014), D<missing VAR>OI10.1038/nature13763<missing PERIOD>
Featurization terminated normally.
0,0,0,0,0,0,0,0.09005925899241701,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.9099407410075829,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[546.0, 1, ',', 8],[537.0, 2, ',', 8],[530.0, 3, ',', 8],[525.0, 4, ',', 8],[497.0, 5, ',', 8],[495.0, 6.0, 'Here', 8],[437.0, 452, ',', 8],[430.0, 4.5, 'Kelvin', 8],[419.0, 14.7, 'Tesla', 8],[406.0, 0.4, 'Kelvin', 8],[403.0, 45, 'Tesla', 8],[209.0, 60, 'T', 4],[192.0, 13, 'million', 4],[186.0, 0.5, 'K', 4]

W
###Proximity Effect in Periodic Arrays of Superconducting Nanoislands on Thin Graphite Layer|Yu. I. Latyshev,A. M. Smolovich,A. P. Orlov,A. V. Frolov,V. S. Vlasenko###
(414826, 414826)
 The regular structure of superconducting nanoislands of alloy W-Ga-C wasfabricated on nanothin graphite using focused ion beam.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 1.7, 'K', 1]

Ga
###Proximity Effect in Periodic Arrays of Superconducting Nanoislands on Thin Graphite Layer|Yu. I. Latyshev,A. M. Smolovich,A. P. Orlov,A. V. Frolov,V. S. Vlasenko###
(414828, 414828)
 The regular structure of superconducting nanoislands of alloy W-Ga-C wasfabricated on nanothin graphite using focused ion beam.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 1.7, 'K', 1]

C
###Proximity Effect in Periodic Arrays of Superconducting Nanoislands on Thin Graphite Layer|Yu. I. Latyshev,A. M. Smolovich,A. P. Orlov,A. V. Frolov,V. S. Vlasenko###
(414830, 414830)
 The regular structure of superconducting nanoislands of alloy W-Ga-C wasfabricated on nanothin graphite using focused ion beam.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 1.7, 'K', 1]

W
###Proximity Effect in Periodic Arrays of Superconducting Nanoislands on Thin Graphite Layer|Yu. I. Latyshev,A. M. Smolovich,A. P. Orlov,A. V. Frolov,V. S. Vlasenko###
(414950, 414950)
 The difference between those measurementsdemonstrates the proximity effect on a regular structure of superconductingW-Ga-C nanoislands on nanothin graphite layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 1.7, 'K', 1]

Ga
###Proximity Effect in Periodic Arrays of Superconducting Nanoislands on Thin Graphite Layer|Yu. I. Latyshev,A. M. Smolovich,A. P. Orlov,A. V. Frolov,V. S. Vlasenko###
(414952, 414952)
 The difference between those measurementsdemonstrates the proximity effect on a regular structure of superconductingW-Ga-C nanoislands on nanothin graphite layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 1.7, 'K', 1]

C
###Proximity Effect in Periodic Arrays of Superconducting Nanoislands on Thin Graphite Layer|Yu. I. Latyshev,A. M. Smolovich,A. P. Orlov,A. V. Frolov,V. S. Vlasenko###
(414954, 414954)
 The difference between those measurementsdemonstrates the proximity effect on a regular structure of superconductingW-Ga-C nanoislands on nanothin graphite layer.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 1.7, 'K', 1]

II
###Spin Texture in Type-II Weyl Semimetal WTe2|Baojie Feng,Yang-Hao Chan,Ya Feng,Ro-Ya Liu,Mei-Yin Chou,Kenta Kuroda,Koichiro Yaji,Ayumi Harasawa,Paolo Moras,Alexei Barinov,Walid G. Malaeb,Cedric Bareille,Takeshi Kondo,Shik Shin,Fumio Komori,Tai-Chang Chiang,Youguo Shi,Iwao Matsuda###
(414983, 414984)
Spin Texture in Type-II Weyl Semimetal WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Spin Texture in Type-II Weyl Semimetal WTe2|Baojie Feng,Yang-Hao Chan,Ya Feng,Ro-Ya Liu,Mei-Yin Chou,Kenta Kuroda,Koichiro Yaji,Ayumi Harasawa,Paolo Moras,Alexei Barinov,Walid G. Malaeb,Cedric Bareille,Takeshi Kondo,Shik Shin,Fumio Komori,Tai-Chang Chiang,Youguo Shi,Iwao Matsuda###
(414990, 414992)
Spin Texture in Type-II Weyl Semimetal WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Spin Texture in Type-II Weyl Semimetal WTe2|Baojie Feng,Yang-Hao Chan,Ya Feng,Ro-Ya Liu,Mei-Yin Chou,Kenta Kuroda,Koichiro Yaji,Ayumi Harasawa,Paolo Moras,Alexei Barinov,Walid G. Malaeb,Cedric Bareille,Takeshi Kondo,Shik Shin,Fumio Komori,Tai-Chang Chiang,Youguo Shi,Iwao Matsuda###
(415013, 415015)
 We determine the band structure and spin texture of WTe2 by spin- andangle-resolved photoemission spectroscopy (SARPES).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin Texture in Type-II Weyl Semimetal WTe2|Baojie Feng,Yang-Hao Chan,Ya Feng,Ro-Ya Liu,Mei-Yin Chou,Kenta Kuroda,Koichiro Yaji,Ayumi Harasawa,Paolo Moras,Alexei Barinov,Walid G. Malaeb,Cedric Bareille,Takeshi Kondo,Shik Shin,Fumio Komori,Tai-Chang Chiang,Youguo Shi,Iwao Matsuda###
(415034, 415034)
 We determine the band structure and spin texture of WTe2 by spin- andangle-resolved photoemission spectroscopy (SARPES).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin Texture in Type-II Weyl Semimetal WTe2|Baojie Feng,Yang-Hao Chan,Ya Feng,Ro-Ya Liu,Mei-Yin Chou,Kenta Kuroda,Koichiro Yaji,Ayumi Harasawa,Paolo Moras,Alexei Barinov,Walid G. Malaeb,Cedric Bareille,Takeshi Kondo,Shik Shin,Fumio Komori,Tai-Chang Chiang,Youguo Shi,Iwao Matsuda###
(415039, 415039)
 We determine the band structure and spin texture of WTe2 by spin- andangle-resolved photoemission spectroscopy (SARPES).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Spin Texture in Type-II Weyl Semimetal WTe2|Baojie Feng,Yang-Hao Chan,Ya Feng,Ro-Ya Liu,Mei-Yin Chou,Kenta Kuroda,Koichiro Yaji,Ayumi Harasawa,Paolo Moras,Alexei Barinov,Walid G. Malaeb,Cedric Bareille,Takeshi Kondo,Shik Shin,Fumio Komori,Tai-Chang Chiang,Youguo Shi,Iwao Matsuda###
(415104, 415106)
 Our results supportWTe2 to be a type-II Weyl semimetal candidate and provide important informationto understand its extremely large and nonsaturating magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Spin Texture in Type-II Weyl Semimetal WTe2|Baojie Feng,Yang-Hao Chan,Ya Feng,Ro-Ya Liu,Mei-Yin Chou,Kenta Kuroda,Koichiro Yaji,Ayumi Harasawa,Paolo Moras,Alexei Barinov,Walid G. Malaeb,Cedric Bareille,Takeshi Kondo,Shik Shin,Fumio Komori,Tai-Chang Chiang,Youguo Shi,Iwao Matsuda###
(415116, 415117)
 Our results supportWTe2 to be a type-II Weyl semimetal candidate and provide important informationto understand its extremely large and nonsaturating magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ON
###Response of a spin valve to a spin battery|Khuôn-Viêt Pham###
(415203, 415204)
 It is shown that spin valves under suitable symmetry conditions exhibit anON-OFF response to a spin battery, and are therefore perfect spin transistors.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OFF
###Response of a spin valve to a spin battery|Khuôn-Viêt Pham###
(415206, 415208)
 It is shown that spin valves under suitable symmetry conditions exhibit anON-OFF response to a spin battery, and are therefore perfect spin transistors.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Response of a spin valve to a spin battery|Khuôn-Viêt Pham###
(415307, 415307)
While a spin valve driven by a charge battery displays the usual GMR (GiantMagneto-Resistance), this means that a pure spin current or pure spinaccumulation can generate an infinite magnetoresistance (IMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CPP
###Response of a spin valve to a spin battery|Khuôn-Viêt Pham###
(415326, 415328)
 Magnetic tunneljunctions as well as CPP (current perpendicular to plane) or CIP (current inplane) metallic trilayers are discussed.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CIP
###Response of a spin valve to a spin battery|Khuôn-Viêt Pham###
(415342, 415344)
 Magnetic tunneljunctions as well as CPP (current perpendicular to plane) or CIP (current inplane) metallic trilayers are discussed.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

InAs/GaInSb
###Low-Temperature Conductivity of Weakly Interacting Quantum Spin Hall Edges in Strained-Layer InAs/GaInSb|Tingxin Li,Pengjie Wang,Gerard Sullivan,Xi Lin,Rui-Rui Du###
(415584, 415589)
Low-Temperature Conductivity of Weakly Interacting Quantum Spin Hall Edges in Strained-Layer InAs/GaInSb.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

InAs/Ga0.68In0.32Sb
###Low-Temperature Conductivity of Weakly Interacting Quantum Spin Hall Edges in Strained-Layer InAs/GaInSb|Tingxin Li,Pengjie Wang,Gerard Sullivan,Xi Lin,Rui-Rui Du###
(415609, 415616)
 We report low-temperature transport measurements in strainedInAs/Ga0.68In0.32Sb quantum wells, which supports time-reversalsymmetry-protected helical edge states.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

In
###Skyrmion meets magnetic tunnel junction: an efficient way for electrical skyrmion detection investigated by ab initio theory|Jonas Friedrich Schäfer-Richarz,Philipp Risius,Michael Czerner,Christian Heiliger###
(415795, 415795)
 In our proof-of-principle study we examine the influence of skyrmions onmagnetoresistive transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Skyrmion meets magnetic tunnel junction: an efficient way for electrical skyrmion detection investigated by ab initio theory|Jonas Friedrich Schäfer-Richarz,Philipp Risius,Michael Czerner,Christian Heiliger###
(415827, 415827)
 In particular, we show that magnetic tunneljunctions are a technologically appealing and promising way for electricaldetection of non-collinear magnetic structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Vertical transport and tunnelling in rare-earth nitride heterostructures|Jackson D. Miller,Felicia H. Ullstad,H. Joe Trodahl,Ben. J. Ruck,Franck Natali###
(416073, 416073)
 We have indentified ohmic contacts suitable for thedevice structures that demand electron transport through interface layers, andgrown REN/insulator/REN heterostructures that display tunnellingcharacteristics, an enormous 400% tunneling magnetoresistance and a hysteresispromising their exploitation in non-volatile magnetic random access memory.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 400, '%', 0]

N
###Vertical transport and tunnelling in rare-earth nitride heterostructures|Jackson D. Miller,Felicia H. Ullstad,H. Joe Trodahl,Ben. J. Ruck,Franck Natali###
(416079, 416079)
 We have indentified ohmic contacts suitable for thedevice structures that demand electron transport through interface layers, andgrown REN/insulator/REN heterostructures that display tunnellingcharacteristics, an enormous 400% tunneling magnetoresistance and a hysteresispromising their exploitation in non-volatile magnetic random access memory.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 400, '%', 0]

C
###Crossover of the Hall-voltage distribution in AC quantum Hall effect|Hiroshi Akera###
(416354, 416354)
Crossover of the Hall-voltage distribution in AC quantum Hall effect.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Crossover of the Hall-voltage distribution in AC quantum Hall effect|Hiroshi Akera###
(416384, 416384)
 The distribution of the Hall voltage induced by low-frequency AC current isstudied theoretically in the incoherent linear transport of quantum Hallsystems.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Crossover of the Hall-voltage distribution in AC quantum Hall effect|Hiroshi Akera###
(416504, 416504)
 Thiscrossover is also reflected in the frequency dependence of ACmagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Current-biased Andreev interferometer|A. V. Galaktionov,A. D. Zaikin###
(416856, 416856)
 In the non-hysteretic regime we find a pronounced voltage modulationwith the magnetic flux which can be used for improving sensitivity of Andreevinterferometers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn0.9Fe0.1Si
###Multiple magnetic states within the A-phase determined by field-orientation dependence of Mn0.9Fe0.1Si|Peter E. Siegfried,Alexander C. Bornstein,Andrew C. Treglia,Thomas Wolf,Minhyea Lee###
(416943, 416947)
Multiple magnetic states within the A-phase determined by field-orientation dependence of Mn0.9Fe0.1Si.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.45,0.05,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Multiple magnetic states within the A-phase determined by field-orientation dependence of Mn0.9Fe0.1Si|Peter E. Siegfried,Alexander C. Bornstein,Andrew C. Treglia,Thomas Wolf,Minhyea Lee###
(416970, 416970)
 We report three distinct regions within the A-phase in Fe-doped MnSi, basedon the evolution of magnetoresistance and the Hall effect as a function oforientation of applied field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnSi
###Multiple magnetic states within the A-phase determined by field-orientation dependence of Mn0.9Fe0.1Si|Peter E. Siegfried,Alexander C. Bornstein,Andrew C. Treglia,Thomas Wolf,Minhyea Lee###
(416974, 416975)
 We report three distinct regions within the A-phase in Fe-doped MnSi, basedon the evolution of magnetoresistance and the Hall effect as a function oforientation of applied field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Multiple magnetic states within the A-phase determined by field-orientation dependence of Mn0.9Fe0.1Si|Peter E. Siegfried,Alexander C. Bornstein,Andrew C. Treglia,Thomas Wolf,Minhyea Lee###
(417017, 417017)
 Fe impurities as pinning centers and crystallineanisotropy are found non-negligible only at the boundary of the A-phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Half-Metallic Ferromagnets and Spin Gapless Semiconductors|V. V. Marchenkov,N. I. Kourov,V. Yu. Irkhin###
(417371, 417371)
 A brief review of experimental and theoretical studies of half-metallicferromagnets (HM<missing VAR>F) and spin gapless semiconductors (SG<missing VAR>S) is given.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Half-Metallic Ferromagnets and Spin Gapless Semiconductors|V. V. Marchenkov,N. I. Kourov,V. Yu. Irkhin###
(417373, 417373)
 A brief review of experimental and theoretical studies of half-metallicferromagnets (HM<missing VAR>F) and spin gapless semiconductors (SG<missing VAR>S) is given.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Half-Metallic Ferromagnets and Spin Gapless Semiconductors|V. V. Marchenkov,N. I. Kourov,V. Yu. Irkhin###
(417385, 417385)
 A brief review of experimental and theoretical studies of half-metallicferromagnets (HM<missing VAR>F) and spin gapless semiconductors (SG<missing VAR>S) is given.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Half-Metallic Ferromagnets and Spin Gapless Semiconductors|V. V. Marchenkov,N. I. Kourov,V. Yu. Irkhin###
(417387, 417387)
 A brief review of experimental and theoretical studies of half-metallicferromagnets (HM<missing VAR>F) and spin gapless semiconductors (SG<missing VAR>S) is given.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Half-Metallic Ferromagnets and Spin Gapless Semiconductors|V. V. Marchenkov,N. I. Kourov,V. Yu. Irkhin###
(417464, 417464)
 The problem of low-temperature resistivity in HM<missing VAR>F istreated in terms of one-magnon and two-magnon scattering processes.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Half-Metallic Ferromagnets and Spin Gapless Semiconductors|V. V. Marchenkov,N. I. Kourov,V. Yu. Irkhin###
(417466, 417466)
 The problem of low-temperature resistivity in HM<missing VAR>F istreated in terms of one-magnon and two-magnon scattering processes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PdNi
###Geometrical control of the magnetization direction in high aspect-ratio PdNi ferromagnetic nano-electrodes|J. J. Gonzalez-Pons,J. J. Henderson,E. del Barco,B. Ozyilmaz###
(417522, 417523)
Geometrical control of the magnetization direction in high aspect-ratio PdNi ferromagnetic nano-electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[172.0, 58, 'degrees', 2],[179.0, 100, 'nm', 2]

Pd0.4Ni0.6
###Geometrical control of the magnetization direction in high aspect-ratio PdNi ferromagnetic nano-electrodes|J. J. Gonzalez-Pons,J. J. Henderson,E. del Barco,B. Ozyilmaz###
(417548, 417551)
 We present a study of electron-beam evaporated Pd0.4Ni0.6 alloy thin films bymeans of ferromagnetic resonance measurements on extended films of varyingthickness and anisotropic magnetoresistance measurements of lithographicallypatterned high aspect-ratio ferromagnetic electrodes, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 58, 'degrees', 1],[151.0, 100, 'nm', 1]

SI
###Diffusion based degradation mechanisms in giant magnetoresistive spin valves|M. Hawraneck,J. Zimmer,W. Raberg,K. Pruegl,S. Schmitt,T. Bever,S. Flege,L. Alff###
(418002, 418003)
 We have identified by secondary ion massspectrometry (SIM<missing VAR>S) two main degradation mechanisms One is related to oxygendiffusion through a protective cap layer, and the other one is interdiffusiondirectly at the functional layers of the GMR stack.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Diffusion based degradation mechanisms in giant magnetoresistive spin valves|M. Hawraneck,J. Zimmer,W. Raberg,K. Pruegl,S. Schmitt,T. Bever,S. Flege,L. Alff###
(418005, 418005)
 We have identified by secondary ion massspectrometry (SIM<missing VAR>S) two main degradation mechanisms One is related to oxygendiffusion through a protective cap layer, and the other one is interdiffusiondirectly at the functional layers of the GMR stack.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(TaN)
###Diffusion based degradation mechanisms in giant magnetoresistive spin valves|M. Hawraneck,J. Zimmer,W. Raberg,K. Pruegl,S. Schmitt,T. Bever,S. Flege,L. Alff###
(418091, 418094)
 By choosing a suitablematerial as cap layer (TaN), the oxidation effect can be suppressed.
Featurization successful!
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga[Al]As
###Small scale lateral superlattices in two-dimensional electron gases prepared by diblock copolymer masks|S. Hugger,T. Heinzel,T. Thurn-Albrecht###
(418204, 418208)
 A poly(styrene-block-methylmethacrylate) diblock copolymer in the hexagonalcylindrical phase has been used as a mask for preparing a periodic gate on topof a Ga[Al]As-heterostructure.
EXCEPTION 1: Square brackets detected! Chemical formula was modified to: Ga(Al)As
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 43, 'nm', 1]

SrTiO3
###Magnetoresistance oscillations and relaxation effects at the SrTiO3-LaAlO3 interface|M. van Zalk,J. Huijben,A. J. M. Giesbers,M. Huijben,U. Zeitler,J. C. Maan,W. G. van der Wiel,G. Rijnders,D. H. A. Blank,H. Hilgenkamp,A. Brinkman###
(418318, 418321)
Magnetoresistance oscillations and relaxation effects at the SrTiO3-LaAlO3 interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaAlO3
###Magnetoresistance oscillations and relaxation effects at the SrTiO3-LaAlO3 interface|M. van Zalk,J. Huijben,A. J. M. Giesbers,M. Huijben,U. Zeitler,J. C. Maan,W. G. van der Wiel,G. Rijnders,D. H. A. Blank,H. Hilgenkamp,A. Brinkman###
(418323, 418326)
Magnetoresistance oscillations and relaxation effects at the SrTiO3-LaAlO3 interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Magnetoresistance oscillations and relaxation effects at the SrTiO3-LaAlO3 interface|M. van Zalk,J. Huijben,A. J. M. Giesbers,M. Huijben,U. Zeitler,J. C. Maan,W. G. van der Wiel,G. Rijnders,D. H. A. Blank,H. Hilgenkamp,A. Brinkman###
(418352, 418355)
 We present low-temperature and high-field magnetotransport data onSrTiO3-LaAlO3 interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaAlO3
###Magnetoresistance oscillations and relaxation effects at the SrTiO3-LaAlO3 interface|M. van Zalk,J. Huijben,A. J. M. Giesbers,M. Huijben,U. Zeitler,J. C. Maan,W. G. van der Wiel,G. Rijnders,D. H. A. Blank,H. Hilgenkamp,A. Brinkman###
(418357, 418360)
 We present low-temperature and high-field magnetotransport data onSrTiO3-LaAlO3 interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Electric spectroscopy of vortex states and dynamics in magnetic disks|Minori Goto,Hiroshi Hata,Akinobu Yamaguchi,Yoshinobu Nakatani,Takehiro Yamaoka,Yukio Nozaki,Hideki Miyajima###
(418555, 418555)
 Spin-polarized radio frequency (R<missing VAR>F) currents and R<missing VAR>F-Oersted fields resonantlyexcite a magnetic vortex core confined in a micron-scale soft magnetic disk.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Electric spectroscopy of vortex states and dynamics in magnetic disks|Minori Goto,Hiroshi Hata,Akinobu Yamaguchi,Yoshinobu Nakatani,Takehiro Yamaoka,Yukio Nozaki,Hideki Miyajima###
(418563, 418563)
 Spin-polarized radio frequency (R<missing VAR>F) currents and R<missing VAR>F-Oersted fields resonantlyexcite a magnetic vortex core confined in a micron-scale soft magnetic disk.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Electric spectroscopy of vortex states and dynamics in magnetic disks|Minori Goto,Hiroshi Hata,Akinobu Yamaguchi,Yoshinobu Nakatani,Takehiro Yamaoka,Yukio Nozaki,Hideki Miyajima###
(418599, 418599)
 Inthis study, we measured the rectifying voltage spectra caused by theanisotropic magnetoresistance oscillation due to the gyration of the vortexwith different polarity and chirality.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiCoFe
###Competition between Thickness and Electrical Conditioning Influence in Enhancing Giant Magnetoresistance Ratio for NiCoFe/Alq3/NiCoFe Spin Valve|Mitra Djamal,Ramli,Sparisoma Viridi,Khairurrijal###
(418751, 418753)
Competition between Thickness and Electrical Conditioning Influence in Enhancing Giant Magnetoresistance Ratio for NiCoFe/Alq3/NiCoFe Spin Valve.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiCoFe
###Competition between Thickness and Electrical Conditioning Influence in Enhancing Giant Magnetoresistance Ratio for NiCoFe/Alq3/NiCoFe Spin Valve|Mitra Djamal,Ramli,Sparisoma Viridi,Khairurrijal###
(418758, 418760)
Competition between Thickness and Electrical Conditioning Influence in Enhancing Giant Magnetoresistance Ratio for NiCoFe/Alq3/NiCoFe Spin Valve.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Competition between Thickness and Electrical Conditioning Influence in Enhancing Giant Magnetoresistance Ratio for NiCoFe/Alq3/NiCoFe Spin Valve|Mitra Djamal,Ramli,Sparisoma Viridi,Khairurrijal###
(418803, 418803)
 At some condition one factor canoverride the other as reported by experiment results.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Slow in-plane magnetoresistance oscillations in multiband quasi-two-dimensional metals|P. D. Grigoriev,M. M. Korshunov,T. I. Mogilyuk###
(419178, 419178)
 Slow oscillations (SlO) of magnetoresistance is a convenient tool to measureelectronic structure parameters in quasi-two-dimensional metals.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Slow in-plane magnetoresistance oscillations in multiband quasi-two-dimensional metals|P. D. Grigoriev,M. M. Korshunov,T. I. Mogilyuk###
(419269, 419269)
 We show that SlO can be used tomeasure the interlayer transfer integral in multi-band conductors similar tosingle-band metals.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Slow in-plane magnetoresistance oscillations in multiband quasi-two-dimensional metals|P. D. Grigoriev,M. M. Korshunov,T. I. Mogilyuk###
(419310, 419310)
 In addition, the SlO allow to measure and compare theeffective masses or the electron scattering rates in various bands.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Slow in-plane magnetoresistance oscillations in multiband quasi-two-dimensional metals|P. D. Grigoriev,M. M. Korshunov,T. I. Mogilyuk###
(419318, 419318)
 In addition, the SlO allow to measure and compare theeffective masses or the electron scattering rates in various bands.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Mechanism of Néel order switching in antiferromagnetic thin films revealed by magnetotransport and direct imaging|Lorenzo Baldrati,Olena Gomonay,Andrew Ross,Mariia Filianina,Romain Lebrun,Rafael Ramos,Cyril Leveille,Felix Fuhrmann,Thomas Forrest,Francesco Maccherozzi,Sergio Valencia,Florian Kronast,Eiji Saitoh,Jairo Sinova,Mathias Kläui###
(419572, 419572)
Mechanism of Nel order switching in antiferromagnetic thin films revealed by magnetotransport and direct imaging.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Mechanism of Néel order switching in antiferromagnetic thin films revealed by magnetotransport and direct imaging|Lorenzo Baldrati,Olena Gomonay,Andrew Ross,Mariia Filianina,Romain Lebrun,Rafael Ramos,Cyril Leveille,Felix Fuhrmann,Thomas Forrest,Francesco Maccherozzi,Sergio Valencia,Florian Kronast,Eiji Saitoh,Jairo Sinova,Mathias Kläui###
(419665, 419665)
 We probe the current-induced magnetic switching of insulatingantiferromagnet/heavy metals systems, by electrical spin Hall magnetoresistancemeasurements and direct imaging, identifying a reversal occurring by domainwall (D<missing VAR>W) motion.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WP
###Dimensionality of the superconductivity in the transition metal pnictide WP|Angela Nigro,Giuseppe Cuono,Pasquale Marra,Antonio Leo,Gaia Grimaldi,Ziyi Liu,Zhenyu Mi,Wei Wu,Guangtong Liu,Carmine Autieri,Jianlin Luo,Canio Noce###
(420219, 420220)
Dimensionality of the superconductivity in the transition metal pnictide WP.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WP
###Dimensionality of the superconductivity in the transition metal pnictide WP|Angela Nigro,Giuseppe Cuono,Pasquale Marra,Antonio Leo,Gaia Grimaldi,Ziyi Liu,Zhenyu Mi,Wei Wu,Guangtong Liu,Carmine Autieri,Jianlin Luo,Canio Noce###
(420246, 420247)
 We report theoretical and experimental results on the transition metalpnictide WP.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WP
###Dimensionality of the superconductivity in the transition metal pnictide WP|Angela Nigro,Giuseppe Cuono,Pasquale Marra,Antonio Leo,Gaia Grimaldi,Ziyi Liu,Zhenyu Mi,Wei Wu,Guangtong Liu,Carmine Autieri,Jianlin Luo,Canio Noce###
(420279, 420280)
 The theoretical outcomes based on tight-binding calculations anddensity functional theory indicate that WP is a three-dimensionalsuperconductor with an anisotropic electronic structure and nonsymmorphicsymmetries.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sn/InSb
###Large magnetoresistance observed in α-Sn/InSb heterostructures|Yuanfeng Ding,Huanhuan Song,Junwei Huang,Jinshan Yao,Yu Gu,Lian Wei,Yu Deng,Hongtao Yuan,Hong Lu,Yan-Feng Chen###
(420389, 420392)
Large magnetoresistance observed in -Sn/InSb heterostructures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[66.0, 10, 'nm', 1],[69.0, 400, 'nm', 1],[107.0, 450, ',', 3],[109.0, 0, '%', 3]

In
###Large magnetoresistance observed in α-Sn/InSb heterostructures|Yuanfeng Ding,Huanhuan Song,Junwei Huang,Jinshan Yao,Yu Gu,Lian Wei,Yu Deng,Hongtao Yuan,Hong Lu,Yan-Feng Chen###
(420397, 420397)
 In this study, we report the epitaxial growth of a series of alpha-Snfilms on InSb substrate by molecular beam epitaxy (MBE) with thickness varyingfrom 10 nm to 400 nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 10, 'nm', 0],[64.0, 400, 'nm', 0],[102.0, 450, ',', 2],[104.0, 0, '%', 2]

Sn
###Large magnetoresistance observed in α-Sn/InSb heterostructures|Yuanfeng Ding,Huanhuan Song,Junwei Huang,Jinshan Yao,Yu Gu,Lian Wei,Yu Deng,Hongtao Yuan,Hong Lu,Yan-Feng Chen###
(420424, 420424)
 In this study, we report the epitaxial growth of a series of alpha-Snfilms on InSb substrate by molecular beam epitaxy (MBE) with thickness varyingfrom 10 nm to 400 nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 10, 'nm', 0],[37.0, 400, 'nm', 0],[75.0, 450, ',', 2],[77.0, 0, '%', 2]

InSb
###Large magnetoresistance observed in α-Sn/InSb heterostructures|Yuanfeng Ding,Huanhuan Song,Junwei Huang,Jinshan Yao,Yu Gu,Lian Wei,Yu Deng,Hongtao Yuan,Hong Lu,Yan-Feng Chen###
(420431, 420432)
 In this study, we report the epitaxial growth of a series of alpha-Snfilms on InSb substrate by molecular beam epitaxy (MBE) with thickness varyingfrom 10 nm to 400 nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 10, 'nm', 0],[29.0, 400, 'nm', 0],[67.0, 450, ',', 2],[69.0, 0, '%', 2]

Sn
###Large magnetoresistance observed in α-Sn/InSb heterostructures|Yuanfeng Ding,Huanhuan Song,Junwei Huang,Jinshan Yao,Yu Gu,Lian Wei,Yu Deng,Hongtao Yuan,Hong Lu,Yan-Feng Chen###
(420474, 420474)
 High qualities of the alpha-Sn films are confirmed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 10, 'nm', 1],[13.0, 400, 'nm', 1],[25.0, 450, ',', 1],[27.0, 0, '%', 1]

InSb
###Large magnetoresistance observed in α-Sn/InSb heterostructures|Yuanfeng Ding,Huanhuan Song,Junwei Huang,Jinshan Yao,Yu Gu,Lian Wei,Yu Deng,Hongtao Yuan,Hong Lu,Yan-Feng Chen###
(420523, 420524)
 Anenhanced large magnetoresistance (MR) over 450,000% has been observed comparedto that of the bare InSb substrate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 10, 'nm', 2],[62.0, 400, 'nm', 2],[24.0, 450, ',', 0],[22.0, 0, '%', 0]

Sn
###Large magnetoresistance observed in α-Sn/InSb heterostructures|Yuanfeng Ding,Huanhuan Song,Junwei Huang,Jinshan Yao,Yu Gu,Lian Wei,Yu Deng,Hongtao Yuan,Hong Lu,Yan-Feng Chen###
(420560, 420560)
 Thickness, angle and temperature dependentMR are used to demonstrate the effects of alpha-Sn films on the electricaltransport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 10, 'nm', 3],[99.0, 400, 'nm', 3],[61.0, 450, ',', 1],[59.0, 0, '%', 1]

CV
###Activation of magnetic moments in CVD-grown graphene by annealing|Hyungki Shin,Ebrahim Sajadi,Ali Khademi,Silvia Lüscher,Joshua A. Folk###
(420594, 420595)
Activation of magnetic moments in CVD<missing VAR>-grown graphene by annealing.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 4, 'K', 2]

SI300
###Activation of magnetic moments in CVD-grown graphene by annealing|Hyungki Shin,Ebrahim Sajadi,Ali Khademi,Silvia Lüscher,Joshua A. Folk###
(420646, 420648)
 Annealing atSI300celsius in inert gases, a common cleaning procedure for graphenedevices, is found to raise the dephasing rate significantly above the rate fromelectron-electron interactions, which would otherwise be expected to dominatedephasing at 4 K and below.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.0033222591362126247,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.9966777408637874,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 4, 'K', 0]

Fe3O4
###Magnetotransport in Fe3O4 nanoparticle arrays dominated by non-collinear surface spins|Seongjin Jang,Wenjie Kong,Hao Zeng###
(420793, 420796)
Magnetotransport in Fe3O4 nanoparticle arrays dominated by non-collinear surface spins.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Magnetotransport in Fe3O4 nanoparticle arrays dominated by non-collinear surface spins|Seongjin Jang,Wenjie Kong,Hao Zeng###
(420875, 420875)
 Charge transport mechanismschange from thermally assisted interparticle tunneling to hopping betweenFe-sites within the particle as the interparticle spacing is decreased.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Semiclassical magnetotransport including the effects of the Berry curvature and Lorentz force|Seungchan Woo,Brett Min,Hongki Min###
(421013, 421013)
 In topological semimetals and insulators, negative longitudinalmagnetoresistance and angle-dependent planar Hall effect have been reportedarising from the Berry curvature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co/Cu
###Computational Study of Magnetic Switching Mechanism and Magnetoresistive Behaviour of Nanoscale Spin Valve Elements|Swapnil Barman###
(421329, 421331)
To this end, we have inspected the magnetic switching mechanism andmagnetoresistive behaviour of nanoscale spin valve (Co/Cu/Ni80Fe20) elements oftwo different shapes with varying lateral aspect ratios (ARs) by computationalmicromagnetic simulation.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[58.0, 2, 'x', 1],[62.0, 3, 'x', 1],[81.0, 1.25, 'of', 1],[304.0, 1.25, 'shows', 6]

Fe20
###Computational Study of Magnetic Switching Mechanism and Magnetoresistive Behaviour of Nanoscale Spin Valve Elements|Swapnil Barman###
(421335, 421336)
To this end, we have inspected the magnetic switching mechanism andmagnetoresistive behaviour of nanoscale spin valve (Co/Cu/Ni80Fe20) elements oftwo different shapes with varying lateral aspect ratios (ARs) by computationalmicromagnetic simulation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 2, 'x', 1],[57.0, 3, 'x', 1],[76.0, 1.25, 'of', 1],[299.0, 1.25, 'shows', 6]

Ni80Fe20
###Computational Study of Magnetic Switching Mechanism and Magnetoresistive Behaviour of Nanoscale Spin Valve Elements|Swapnil Barman###
(421539, 421542)
 Weobserve that the elements with higher AR<missing VAR> show the Ni80Fe20 and Co layersforming antiparallel states in the plateau similar to syntheticantiferromagnets.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 2, 'x', 3],[146.0, 3, 'x', 3],[127.0, 1.25, 'of', 3],[93.0, 1.25, 'shows', 2]

Co
###Computational Study of Magnetic Switching Mechanism and Magnetoresistive Behaviour of Nanoscale Spin Valve Elements|Swapnil Barman###
(421546, 421546)
 Weobserve that the elements with higher AR<missing VAR> show the Ni80Fe20 and Co layersforming antiparallel states in the plateau similar to syntheticantiferromagnets.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 2, 'x', 3],[153.0, 3, 'x', 3],[134.0, 1.25, 'of', 3],[89.0, 1.25, 'shows', 2]

As
###Computational Study of Magnetic Switching Mechanism and Magnetoresistive Behaviour of Nanoscale Spin Valve Elements|Swapnil Barman###
(421573, 421573)
 As we reduce the AR<missing VAR>, more complex quasi-uniform magneticstates are observed which are even more complicated for elliptical elements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[184.0, 2, 'x', 4],[180.0, 3, 'x', 4],[161.0, 1.25, 'of', 4],[62.0, 1.25, 'shows', 1]

S
###Spin-Hall magnetoresistance in quasi-two-dimensional antiferromagnetic insulator/metal bilayer systems|Takuto Ishikawa,Mamoru Matsuo,Takeo Kato###
(422105, 422105)
 We study the temperature dependence of spin Hall magnetoresistance (SMR) inantiferromagnetic insulator (AFI)/metal bilayer systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Spin-Hall magnetoresistance in quasi-two-dimensional antiferromagnetic insulator/metal bilayer systems|Takuto Ishikawa,Mamoru Matsuo,Takeo Kato###
(422120, 422120)
 We study the temperature dependence of spin Hall magnetoresistance (SMR) inantiferromagnetic insulator (AFI)/metal bilayer systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin-Hall magnetoresistance in quasi-two-dimensional antiferromagnetic insulator/metal bilayer systems|Takuto Ishikawa,Mamoru Matsuo,Takeo Kato###
(422143, 422143)
 We calculate theamplitude of the SMR signal by using a quantum Monte Carlo simulation andexamine how the SMR depends on the amplitude of the spin, thickness of the AFIlayer, and randomness of the exchange interactions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin-Hall magnetoresistance in quasi-two-dimensional antiferromagnetic insulator/metal bilayer systems|Takuto Ishikawa,Mamoru Matsuo,Takeo Kato###
(422172, 422172)
 We calculate theamplitude of the SMR signal by using a quantum Monte Carlo simulation andexamine how the SMR depends on the amplitude of the spin, thickness of the AFIlayer, and randomness of the exchange interactions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FI
###Spin-Hall magnetoresistance in quasi-two-dimensional antiferromagnetic insulator/metal bilayer systems|Takuto Ishikawa,Mamoru Matsuo,Takeo Kato###
(422198, 422199)
 We calculate theamplitude of the SMR signal by using a quantum Monte Carlo simulation andexamine how the SMR depends on the amplitude of the spin, thickness of the AFIlayer, and randomness of the exchange interactions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin-Hall magnetoresistance in quasi-two-dimensional antiferromagnetic insulator/metal bilayer systems|Takuto Ishikawa,Mamoru Matsuo,Takeo Kato###
(422247, 422247)
 Our results for simplequantum spin models provide a useful starting point for understanding SMRmeasurements on atomic layers of magnetic compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###High field magnetotransport in composite conductors: the effective medium approximation revisited|David J. Bergman,David G. Stroud###
(422311, 422311)
 The self consistent effective medium approximation (SEMA) is used to studythree-dimensional random conducting composites under the influence of a strongmagnetic field bf B, in the case where all constituents exhibit isotropicresponse.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###High field magnetotransport in composite conductors: the effective medium approximation revisited|David J. Bergman,David G. Stroud###
(422355, 422355)
 The self consistent effective medium approximation (SEMA) is used to studythree-dimensional random conducting composites under the influence of a strongmagnetic field bf B, in the case where all constituents exhibit isotropicresponse.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###High field magnetotransport in composite conductors: the effective medium approximation revisited|David J. Bergman,David G. Stroud###
(422459, 422459)
Numerical solutions of the SEMA equations are also obtained, in some cases, andcompared with those results.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###High field magnetotransport in composite conductors: the effective medium approximation revisited|David J. Bergman,David G. Stroud###
(422492, 422492)
 In two-constituentfree-electron-metal/perfect-insulator mixtures, the magnetoresistance isasymptotically proportional to bf B at em all concentrations above thepercolation threshold.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###High field magnetotransport in composite conductors: the effective medium approximation revisited|David J. Bergman,David G. Stroud###
(422527, 422527)
 In two-constituentfree-electron-metal/perfect-insulator mixtures, the magnetoresistance isasymptotically proportional to bf B at em all concentrations above thepercolation threshold.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###High field magnetotransport in composite conductors: the effective medium approximation revisited|David J. Bergman,David G. Stroud###
(422547, 422547)
 In three-constituent metal/insulator/superconductormixtures a line of critical points is found, where the strong fieldmagnetoresistance switches abruptly from saturating to non-saturatingdependence on bf B, at a certain value of theinsulator-to-superconductor concentration ratio.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###High field magnetotransport in composite conductors: the effective medium approximation revisited|David J. Bergman,David G. Stroud###
(422609, 422609)
 In three-constituent metal/insulator/superconductormixtures a line of critical points is found, where the strong fieldmagnetoresistance switches abruptly from saturating to non-saturatingdependence on bf B, at a certain value of theinsulator-to-superconductor concentration ratio.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magnetoresistance in quasi-one-dimensional metals due to Fermi surface cold spots|Perez Moses,Ross H. McKenzie###
(422695, 422695)
 In a number of quasi-one-dimensional organic metals the dependence of themagnetoresistance on the direction of the magnetic field is quite differentfrom the predictions of Boltzmann transport theory for a Fermi liquid with ascattering rate that is independent of momentum.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Magnetoresistance in quasi-one-dimensional metals due to Fermi surface cold spots|Perez Moses,Ross H. McKenzie###
(423052, 423052)
 However, the model cannot give a complete description of the unusualproperties of (TMTSF)2PF6 at pressures of 8-11 kbar.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PF6
###Magnetoresistance in quasi-one-dimensional metals due to Fermi surface cold spots|Perez Moses,Ross H. McKenzie###
(423055, 423057)
 However, the model cannot give a complete description of the unusualproperties of (TMTSF)2PF6 at pressures of 8-11 kbar.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.8571428571428571,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Magnetotransport in 2D lateral superlattices with smooth disorder: Quasiclassical theory of commensurability oscillations|A. D. Mirlin,E. Tsitsishvili,P. Woelfle###
(423331, 423331)
 Forgammall 1, the oscillations are described, in the regime of not too strongmagnetic fields B, by perturbation theory in eta as applied earlier to thecase of one-dimensional modulation.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[248.0, 2, 'D', 4],[87.0, 4, ',', 1],[31.0, 1, ',', 0],[141.0, 1, ',', 2]

At
###Magnetotransport in 2D lateral superlattices with smooth disorder: Quasiclassical theory of commensurability oscillations|A. D. Mirlin,E. Tsitsishvili,P. Woelfle###
(423366, 423366)
 At stronger fields, where Deltarhoxxbecomes much larger than the Drude resistivity, the transport takes theadvection-diffusion form (Rayleigh-Benard convection cell) with a largePeclet number, implying a much slower (propto B3/4) increase of theoscillation amplitude with B.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[283.0, 2, 'D', 5],[122.0, 4, ',', 2],[66.0, 1, ',', 1],[106.0, 1, ',', 1]

B
###Magnetotransport in 2D lateral superlattices with smooth disorder: Quasiclassical theory of commensurability oscillations|A. D. Mirlin,E. Tsitsishvili,P. Woelfle###
(423413, 423413)
 At stronger fields, where Deltarhoxxbecomes much larger than the Drude resistivity, the transport takes theadvection-diffusion form (Rayleigh-Benard convection cell) with a largePeclet number, implying a much slower (propto B3/4) increase of theoscillation amplitude with B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[330.0, 2, 'D', 5],[169.0, 4, ',', 2],[113.0, 1, ',', 1],[59.0, 1, ',', 1]

P
###Magnetotransport in 2D lateral superlattices with smooth disorder: Quasiclassical theory of commensurability oscillations|A. D. Mirlin,E. Tsitsishvili,P. Woelfle###
(423428, 423428)
 At stronger fields, where Deltarhoxxbecomes much larger than the Drude resistivity, the transport takes theadvection-diffusion form (Rayleigh-Benard convection cell) with a largePeclet number, implying a much slower (propto B3/4) increase of theoscillation amplitude with B.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[345.0, 2, 'D', 5],[184.0, 4, ',', 2],[128.0, 1, ',', 1],[44.0, 1, ',', 1]

B3
###Magnetotransport in 2D lateral superlattices with smooth disorder: Quasiclassical theory of commensurability oscillations|A. D. Mirlin,E. Tsitsishvili,P. Woelfle###
(423445, 423446)
 At stronger fields, where Deltarhoxxbecomes much larger than the Drude resistivity, the transport takes theadvection-diffusion form (Rayleigh-Benard convection cell) with a largePeclet number, implying a much slower (propto B3/4) increase of theoscillation amplitude with B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[362.0, 2, 'D', 5],[201.0, 4, ',', 2],[145.0, 1, ',', 1],[26.0, 1, ',', 1]

B
###Magnetotransport in 2D lateral superlattices with smooth disorder: Quasiclassical theory of commensurability oscillations|A. D. Mirlin,E. Tsitsishvili,P. Woelfle###
(423464, 423464)
 At stronger fields, where Deltarhoxxbecomes much larger than the Drude resistivity, the transport takes theadvection-diffusion form (Rayleigh-Benard convection cell) with a largePeclet number, implying a much slower (propto B3/4) increase of theoscillation amplitude with B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[381.0, 2, 'D', 5],[220.0, 4, ',', 2],[164.0, 1, ',', 1],[8.0, 1, ',', 1]

B
###Magnetotransport in 2D lateral superlattices with smooth disorder: Quasiclassical theory of commensurability oscillations|A. D. Mirlin,E. Tsitsishvili,P. Woelfle###
(423483, 423483)
 If gammagg 1, the transport at low B isdominated by the modulation-induced chaos (rather than by disorder).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[400.0, 2, 'D', 6],[239.0, 4, ',', 3],[183.0, 1, ',', 2],[11.0, 1, ',', 0]

Fe1-xCu
###Anisotropic Colossal Magnetoresistance Effects in Fe_{1-x}Cu_xCr_2S_4|V. Fritsch,J. Deisenhofer,R. Fichtl,J. Hemberger,H. -A. Krug von Nidda,M. Muecksch,M. Nicklas,D. Samusi,J. D. Thompson,R. Tidecks,V. Tsurkan,A. Loidl###
(423623, 423627)
Anisotropic Colossal Magnetoresistance Effects in Fe1-xCux<missing VAR>Cr2S4.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[110.0, 16, 'kbar', 2],[215.0, 35, 'K', 6]

Cr2S4
###Anisotropic Colossal Magnetoresistance Effects in Fe_{1-x}Cu_xCr_2S_4|V. Fritsch,J. Deisenhofer,R. Fichtl,J. Hemberger,H. -A. Krug von Nidda,M. Muecksch,M. Nicklas,D. Samusi,J. D. Thompson,R. Tidecks,V. Tsurkan,A. Loidl###
(423629, 423632)
Anisotropic Colossal Magnetoresistance Effects in Fe1-xCux<missing VAR>Cr2S4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 16, 'kbar', 2],[210.0, 35, 'K', 6]

Fe1-xCu
###Anisotropic Colossal Magnetoresistance Effects in Fe_{1-x}Cu_xCr_2S_4|V. Fritsch,J. Deisenhofer,R. Fichtl,J. Hemberger,H. -A. Krug von Nidda,M. Muecksch,M. Nicklas,D. Samusi,J. D. Thompson,R. Tidecks,V. Tsurkan,A. Loidl###
(423658, 423662)
 A detailed study of the electronic transport and magnetic properties ofFe1-xCux<missing VAR>Cr2S4 (x<missing VAR> leq 0.5) on single crystals is presented.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[75.0, 16, 'kbar', 1],[180.0, 35, 'K', 5]

Cr2S4
###Anisotropic Colossal Magnetoresistance Effects in Fe_{1-x}Cu_xCr_2S_4|V. Fritsch,J. Deisenhofer,R. Fichtl,J. Hemberger,H. -A. Krug von Nidda,M. Muecksch,M. Nicklas,D. Samusi,J. D. Thompson,R. Tidecks,V. Tsurkan,A. Loidl###
(423664, 423667)
 A detailed study of the electronic transport and magnetic properties ofFe1-xCux<missing VAR>Cr2S4 (x<missing VAR> leq 0.5) on single crystals is presented.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 16, 'kbar', 1],[175.0, 35, 'K', 5]

K
###Anisotropic Colossal Magnetoresistance Effects in Fe_{1-x}Cu_xCr_2S_4|V. Fritsch,J. Deisenhofer,R. Fichtl,J. Hemberger,H. -A. Krug von Nidda,M. Muecksch,M. Nicklas,D. Samusi,J. D. Thompson,R. Tidecks,V. Tsurkan,A. Loidl###
(423709, 423709)
 Theresistivity is investigated for 2 leq T<missing VAR> leq 300 K in magnetic fields up to14 Tesla and under hydrostatic pressure up to 16 kbar.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 16, 'kbar', 0],[133.0, 35, 'K', 4]

In
###Anisotropic Colossal Magnetoresistance Effects in Fe_{1-x}Cu_xCr_2S_4|V. Fritsch,J. Deisenhofer,R. Fichtl,J. Hemberger,H. -A. Krug von Nidda,M. Muecksch,M. Nicklas,D. Samusi,J. D. Thompson,R. Tidecks,V. Tsurkan,A. Loidl###
(423740, 423740)
 In additionmagnetization and ferromagnetic resonance (FMR) measurements were performed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 16, 'kbar', 1],[102.0, 35, 'K', 3]

F
###Anisotropic Colossal Magnetoresistance Effects in Fe_{1-x}Cu_xCr_2S_4|V. Fritsch,J. Deisenhofer,R. Fichtl,J. Hemberger,H. -A. Krug von Nidda,M. Muecksch,M. Nicklas,D. Samusi,J. D. Thompson,R. Tidecks,V. Tsurkan,A. Loidl###
(423754, 423754)
 In additionmagnetization and ferromagnetic resonance (FMR) measurements were performed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 16, 'kbar', 1],[88.0, 35, 'K', 3]

F
###Anisotropic Colossal Magnetoresistance Effects in Fe_{1-x}Cu_xCr_2S_4|V. Fritsch,J. Deisenhofer,R. Fichtl,J. Hemberger,H. -A. Krug von Nidda,M. Muecksch,M. Nicklas,D. Samusi,J. D. Thompson,R. Tidecks,V. Tsurkan,A. Loidl###
(423767, 423767)
FMR and magnetization data reveal a pronounced magnetic anisotropy, whichdevelops below the Curie temperature, T<missing VAR>mathrmC, and increases stronglytowards lower temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 16, 'kbar', 2],[75.0, 35, 'K', 2]

C
###Anisotropic Colossal Magnetoresistance Effects in Fe_{1-x}Cu_xCr_2S_4|V. Fritsch,J. Deisenhofer,R. Fichtl,J. Hemberger,H. -A. Krug von Nidda,M. Muecksch,M. Nicklas,D. Samusi,J. D. Thompson,R. Tidecks,V. Tsurkan,A. Loidl###
(423804, 423804)
FMR and magnetization data reveal a pronounced magnetic anisotropy, whichdevelops below the Curie temperature, T<missing VAR>mathrmC, and increases stronglytowards lower temperatures.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 16, 'kbar', 2],[38.0, 35, 'K', 2]

Cu
###Anisotropic Colossal Magnetoresistance Effects in Fe_{1-x}Cu_xCr_2S_4|V. Fritsch,J. Deisenhofer,R. Fichtl,J. Hemberger,H. -A. Krug von Nidda,M. Muecksch,M. Nicklas,D. Samusi,J. D. Thompson,R. Tidecks,V. Tsurkan,A. Loidl###
(423825, 423825)
 Increasing the Cu concentration reduces thiseffect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 16, 'kbar', 3],[17.0, 35, 'K', 1]

At
###Anisotropic Colossal Magnetoresistance Effects in Fe_{1-x}Cu_xCr_2S_4|V. Fritsch,J. Deisenhofer,R. Fichtl,J. Hemberger,H. -A. Krug von Nidda,M. Muecksch,M. Nicklas,D. Samusi,J. D. Thompson,R. Tidecks,V. Tsurkan,A. Loidl###
(423837, 423837)
 At temperatures below 35 K the magnetoresistance, MR  fracrho(0) -rho(H)rho(0), exhibits a strong dependence on the direction of themagnetic field, probably due to an enhanced anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 16, 'kbar', 4],[5.0, 35, 'K', 0]

(H)
###Anisotropic Colossal Magnetoresistance Effects in Fe_{1-x}Cu_xCr_2S_4|V. Fritsch,J. Deisenhofer,R. Fichtl,J. Hemberger,H. -A. Krug von Nidda,M. Muecksch,M. Nicklas,D. Samusi,J. D. Thompson,R. Tidecks,V. Tsurkan,A. Loidl###
(423863, 423865)
 At temperatures below 35 K the magnetoresistance, MR  fracrho(0) -rho(H)rho(0), exhibits a strong dependence on the direction of themagnetic field, probably due to an enhanced anisotropy.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 16, 'kbar', 4],[21.0, 35, 'K', 0]

C
###Multi-scale Phase Modulations in Colossal Magnetoresistance Manganites|K. H. Kim,M. Uehara,V. Kiryukhin,S. -W. Cheong###
(424159, 424159)
 Two keytypes of phase inhomogeneities directly relevant to the colossalmagnetoresistance (CMR) are discussed.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La
###Multi-scale Phase Modulations in Colossal Magnetoresistance Manganites|K. H. Kim,M. Uehara,V. Kiryukhin,S. -W. Cheong###
(424229, 424229)
 We presentextensive experimental data for a prototypical system exhibiting such a phasecoexistence, (La,Pr)5/8Ca3/8MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pr
###Multi-scale Phase Modulations in Colossal Magnetoresistance Manganites|K. H. Kim,M. Uehara,V. Kiryukhin,S. -W. Cheong###
(424231, 424231)
 We presentextensive experimental data for a prototypical system exhibiting such a phasecoexistence, (La,Pr)5/8Ca3/8MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ca3
###Multi-scale Phase Modulations in Colossal Magnetoresistance Manganites|K. H. Kim,M. Uehara,V. Kiryukhin,S. -W. Cheong###
(424236, 424237)
 We presentextensive experimental data for a prototypical system exhibiting such a phasecoexistence, (La,Pr)5/8Ca3/8MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnO3
###Multi-scale Phase Modulations in Colossal Magnetoresistance Manganites|K. H. Kim,M. Uehara,V. Kiryukhin,S. -W. Cheong###
(424240, 424242)
 We presentextensive experimental data for a prototypical system exhibiting such a phasecoexistence, (La,Pr)5/8Ca3/8MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Multi-scale Phase Modulations in Colossal Magnetoresistance Manganites|K. H. Kim,M. Uehara,V. Kiryukhin,S. -W. Cheong###
(424398, 424398)
 In this state, nanometer-scale structural correlationsassociated with nanoscale charge/orbital ordered regions are observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Multi-scale Phase Modulations in Colossal Magnetoresistance Manganites|K. H. Kim,M. Uehara,V. Kiryukhin,S. -W. Cheong###
(424493, 424493)
Experimental investigation of numerous manganite systems indicates that thesecorrelations are generic in orthorhombic mixed-valent manganites, and that thecorrelated regions play an essential role in the CMR effect.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co/MgO/Co
###Large magnetoresistance in bcc Co/MgO/Co and FeCo/MgO/FeCo tunneling junctions|X. -G. Zhang,W. H. Butler###
(424516, 424521)
Large magnetoresistance in bcc Co/MgO/Co and FeCo/MgO/FeCo tunneling junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

FeCo/MgO/FeCo
###Large magnetoresistance in bcc Co/MgO/Co and FeCo/MgO/FeCo tunneling junctions|X. -G. Zhang,W. H. Butler###
(424525, 424532)
Large magnetoresistance in bcc Co/MgO/Co and FeCo/MgO/FeCo tunneling junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

MgO
###Large magnetoresistance in bcc Co/MgO/Co and FeCo/MgO/FeCo tunneling junctions|X. -G. Zhang,W. H. Butler###
(424795, 424796)
 The Delta1 state decays much more slowlythan the other states within the MgO barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Large magnetoresistance in bcc Co/MgO/Co and FeCo/MgO/FeCo tunneling junctions|X. -G. Zhang,W. H. Butler###
(424801, 424801)
 In the absence of scatteringwhich breaks the conservation of momentum parallel to the interfaces, theelectrons travelling perpendicular to the interfaces undergo total reflectionif the moments of the electrodes are anti-parallel.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Large magnetoresistance in bcc Co/MgO/Co and FeCo/MgO/FeCo tunneling junctions|X. -G. Zhang,W. H. Butler###
(424955, 424955)
 Examples include systems with (100) layers constructed from Fe, bccCo, or bcc FeCo electrodes and Ge, GaAs, or ZnSe barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Large magnetoresistance in bcc Co/MgO/Co and FeCo/MgO/FeCo tunneling junctions|X. -G. Zhang,W. H. Butler###
(424961, 424961)
 Examples include systems with (100) layers constructed from Fe, bccCo, or bcc FeCo electrodes and Ge, GaAs, or ZnSe barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeCo
###Large magnetoresistance in bcc Co/MgO/Co and FeCo/MgO/FeCo tunneling junctions|X. -G. Zhang,W. H. Butler###
(424968, 424969)
 Examples include systems with (100) layers constructed from Fe, bccCo, or bcc FeCo electrodes and Ge, GaAs, or ZnSe barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ge
###Large magnetoresistance in bcc Co/MgO/Co and FeCo/MgO/FeCo tunneling junctions|X. -G. Zhang,W. H. Butler###
(424975, 424975)
 Examples include systems with (100) layers constructed from Fe, bccCo, or bcc FeCo electrodes and Ge, GaAs, or ZnSe barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Large magnetoresistance in bcc Co/MgO/Co and FeCo/MgO/FeCo tunneling junctions|X. -G. Zhang,W. H. Butler###
(424978, 424979)
 Examples include systems with (100) layers constructed from Fe, bccCo, or bcc FeCo electrodes and Ge, GaAs, or ZnSe barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZnSe
###Large magnetoresistance in bcc Co/MgO/Co and FeCo/MgO/FeCo tunneling junctions|X. -G. Zhang,W. H. Butler###
(424984, 424985)
 Examples include systems with (100) layers constructed from Fe, bccCo, or bcc FeCo electrodes and Ge, GaAs, or ZnSe barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nb
###From the second magnetization peak to peak effect. A study of superconducting properties in Nb films and MgB2 bulk samples|Dimosthenis Stamopoulos,Athanasios Speliotis,Dimitris Niarchos###
(425027, 425027)
 A study of superconducting properties in Nb films and MgB2 bulk samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 9.25, 'K', 2],[215.0, 6.4, 'K', 5],[240.0, 6.4, 'K', 5],[243.0, 40, 'Oe', 5],[319.0, 8.3, 'K', 8]

MgB2
###From the second magnetization peak to peak effect. A study of superconducting properties in Nb films and MgB2 bulk samples|Dimosthenis Stamopoulos,Athanasios Speliotis,Dimitris Niarchos###
(425033, 425035)
 A study of superconducting properties in Nb films and MgB2 bulk samples.
Featurization terminated normally.
0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 9.25, 'K', 2],[207.0, 6.4, 'K', 5],[232.0, 6.4, 'K', 5],[235.0, 40, 'Oe', 5],[311.0, 8.3, 'K', 8]

Nb
###From the second magnetization peak to peak effect. A study of superconducting properties in Nb films and MgB2 bulk samples|Dimosthenis Stamopoulos,Athanasios Speliotis,Dimitris Niarchos###
(425067, 425067)
 We report on magnetic and magnetoresistance measurements in two categories ofsuperconducting Nb films grown via magnetron sputtering and MgB2 bulk samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 9.25, 'K', 1],[175.0, 6.4, 'K', 4],[200.0, 6.4, 'K', 4],[203.0, 40, 'Oe', 4],[279.0, 8.3, 'K', 7]

MgB2
###From the second magnetization peak to peak effect. A study of superconducting properties in Nb films and MgB2 bulk samples|Dimosthenis Stamopoulos,Athanasios Speliotis,Dimitris Niarchos###
(425081, 425083)
 We report on magnetic and magnetoresistance measurements in two categories ofsuperconducting Nb films grown via magnetron sputtering and MgB2 bulk samples.
Featurization terminated normally.
0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 9.25, 'K', 1],[159.0, 6.4, 'K', 4],[184.0, 6.4, 'K', 4],[187.0, 40, 'Oe', 4],[263.0, 8.3, 'K', 7]

In
###From the second magnetization peak to peak effect. A study of superconducting properties in Nb films and MgB2 bulk samples|Dimosthenis Stamopoulos,Athanasios Speliotis,Dimitris Niarchos###
(425091, 425091)
In the first category, films of Tc  9.25 K were produced by annealing duringdeposition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 9.25, 'K', 0],[151.0, 6.4, 'K', 3],[176.0, 6.4, 'K', 3],[179.0, 40, 'Oe', 3],[255.0, 8.3, 'K', 6]

Tc
###From the second magnetization peak to peak effect. A study of superconducting properties in Nb films and MgB2 bulk samples|Dimosthenis Stamopoulos,Athanasios Speliotis,Dimitris Niarchos###
(425104, 425104)
In the first category, films of Tc  9.25 K were produced by annealing duringdeposition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 9.25, 'K', 0],[138.0, 6.4, 'K', 3],[163.0, 6.4, 'K', 3],[166.0, 40, 'Oe', 3],[242.0, 8.3, 'K', 6]

In
###From the second magnetization peak to peak effect. A study of superconducting properties in Nb films and MgB2 bulk samples|Dimosthenis Stamopoulos,Athanasios Speliotis,Dimitris Niarchos###
(425122, 425122)
 In these films, the magnetic measurements exhibited the so-calledsecond magnetization peak (SM<missing VAR>P), which is accompanied by thermomagneticinstabilities (TMI).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 9.25, 'K', 1],[120.0, 6.4, 'K', 2],[145.0, 6.4, 'K', 2],[148.0, 40, 'Oe', 2],[224.0, 8.3, 'K', 5]

S
###From the second magnetization peak to peak effect. A study of superconducting properties in Nb films and MgB2 bulk samples|Dimosthenis Stamopoulos,Athanasios Speliotis,Dimitris Niarchos###
(425151, 425151)
 In these films, the magnetic measurements exhibited the so-calledsecond magnetization peak (SM<missing VAR>P), which is accompanied by thermomagneticinstabilities (TMI).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 9.25, 'K', 1],[91.0, 6.4, 'K', 2],[116.0, 6.4, 'K', 2],[119.0, 40, 'Oe', 2],[195.0, 8.3, 'K', 5]

P
###From the second magnetization peak to peak effect. A study of superconducting properties in Nb films and MgB2 bulk samples|Dimosthenis Stamopoulos,Athanasios Speliotis,Dimitris Niarchos###
(425153, 425153)
 In these films, the magnetic measurements exhibited the so-calledsecond magnetization peak (SM<missing VAR>P), which is accompanied by thermomagneticinstabilities (TMI).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 9.25, 'K', 1],[89.0, 6.4, 'K', 2],[114.0, 6.4, 'K', 2],[117.0, 40, 'Oe', 2],[193.0, 8.3, 'K', 5]

I
###From the second magnetization peak to peak effect. A study of superconducting properties in Nb films and MgB2 bulk samples|Dimosthenis Stamopoulos,Athanasios Speliotis,Dimitris Niarchos###
(425173, 425173)
 In these films, the magnetic measurements exhibited the so-calledsecond magnetization peak (SM<missing VAR>P), which is accompanied by thermomagneticinstabilities (TMI).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 9.25, 'K', 1],[69.0, 6.4, 'K', 2],[94.0, 6.4, 'K', 2],[97.0, 40, 'Oe', 2],[173.0, 8.3, 'K', 5]

I
###From the second magnetization peak to peak effect. A study of superconducting properties in Nb films and MgB2 bulk samples|Dimosthenis Stamopoulos,Athanasios Speliotis,Dimitris Niarchos###
(425281, 425281)
 A comparison to TMI observed in MgB2 bulk samples isalso performed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 9.25, 'K', 4],[39.0, 6.4, 'K', 1],[14.0, 6.4, 'K', 1],[11.0, 40, 'Oe', 1],[65.0, 8.3, 'K', 2]

MgB2
###From the second magnetization peak to peak effect. A study of superconducting properties in Nb films and MgB2 bulk samples|Dimosthenis Stamopoulos,Athanasios Speliotis,Dimitris Niarchos###
(425287, 425289)
 A comparison to TMI observed in MgB2 bulk samples isalso performed.
Featurization terminated normally.
0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 9.25, 'K', 4],[45.0, 6.4, 'K', 1],[20.0, 6.4, 'K', 1],[17.0, 40, 'Oe', 1],[57.0, 8.3, 'K', 2]

I
###From the second magnetization peak to peak effect. A study of superconducting properties in Nb films and MgB2 bulk samples|Dimosthenis Stamopoulos,Athanasios Speliotis,Dimitris Niarchos###
(425328, 425328)
 Our experimental findings cannot be described accurately bycurrent theories on TMI.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[222.0, 9.25, 'K', 5],[86.0, 6.4, 'K', 2],[61.0, 6.4, 'K', 2],[58.0, 40, 'Oe', 2],[18.0, 8.3, 'K', 1]

In
###From the second magnetization peak to peak effect. A study of superconducting properties in Nb films and MgB2 bulk samples|Dimosthenis Stamopoulos,Athanasios Speliotis,Dimitris Niarchos###
(425331, 425331)
 In the second category, films of Tc  8.3 K wereproduced without annealing during deposition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[225.0, 9.25, 'K', 6],[89.0, 6.4, 'K', 3],[64.0, 6.4, 'K', 3],[61.0, 40, 'Oe', 3],[15.0, 8.3, 'K', 0]

Tc
###From the second magnetization peak to peak effect. A study of superconducting properties in Nb films and MgB2 bulk samples|Dimosthenis Stamopoulos,Athanasios Speliotis,Dimitris Niarchos###
(425344, 425344)
 In the second category, films of Tc  8.3 K wereproduced without annealing during deposition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[238.0, 9.25, 'K', 6],[102.0, 6.4, 'K', 3],[77.0, 6.4, 'K', 3],[74.0, 40, 'Oe', 3],[2.0, 8.3, 'K', 0]

In
###From the second magnetization peak to peak effect. A study of superconducting properties in Nb films and MgB2 bulk samples|Dimosthenis Stamopoulos,Athanasios Speliotis,Dimitris Niarchos###
(425362, 425362)
 In such films, we observed a peakeffect (PE).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[256.0, 9.25, 'K', 7],[120.0, 6.4, 'K', 4],[95.0, 6.4, 'K', 4],[92.0, 40, 'Oe', 4],[16.0, 8.3, 'K', 1]

P
###From the second magnetization peak to peak effect. A study of superconducting properties in Nb films and MgB2 bulk samples|Dimosthenis Stamopoulos,Athanasios Speliotis,Dimitris Niarchos###
(425381, 425381)
 In such films, we observed a peakeffect (PE).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[275.0, 9.25, 'K', 7],[139.0, 6.4, 'K', 4],[114.0, 6.4, 'K', 4],[111.0, 40, 'Oe', 4],[35.0, 8.3, 'K', 1]

In
###From the second magnetization peak to peak effect. A study of superconducting properties in Nb films and MgB2 bulk samples|Dimosthenis Stamopoulos,Athanasios Speliotis,Dimitris Niarchos###
(425386, 425386)
 In high magnetic fields the PE<missing VAR> is accompanied by a sharp drop anda narrow hysteretic behaviour in the measured magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[280.0, 9.25, 'K', 8],[144.0, 6.4, 'K', 5],[119.0, 6.4, 'K', 5],[116.0, 40, 'Oe', 5],[40.0, 8.3, 'K', 2]

P
###From the second magnetization peak to peak effect. A study of superconducting properties in Nb films and MgB2 bulk samples|Dimosthenis Stamopoulos,Athanasios Speliotis,Dimitris Niarchos###
(425396, 425396)
 In high magnetic fields the PE<missing VAR> is accompanied by a sharp drop anda narrow hysteretic behaviour in the measured magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[290.0, 9.25, 'K', 8],[154.0, 6.4, 'K', 5],[129.0, 6.4, 'K', 5],[126.0, 40, 'Oe', 5],[50.0, 8.3, 'K', 2]

In
###From the second magnetization peak to peak effect. A study of superconducting properties in Nb films and MgB2 bulk samples|Dimosthenis Stamopoulos,Athanasios Speliotis,Dimitris Niarchos###
(425431, 425431)
 In contrast toexperimental works presented in the past, the comparison of our magneticmeasurements with the magnetoresistance data suggests that the appearance ofsurface superconductivity rather than the melting transition of vortex matteris the cause of the observed behaviour.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[325.0, 9.25, 'K', 9],[189.0, 6.4, 'K', 6],[164.0, 6.4, 'K', 6],[161.0, 40, 'Oe', 6],[85.0, 8.3, 'K', 3]

MnO3
###Low Field Magnetotransport in Manganites|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(425557, 425559)
 The perovskite manganites of general formula RE1-xAexMnO3 (RE rareearth,AE<missing VAR>Ca, Sr, Ba and Pb)have drawn considerable attention, especiallyfollowing the discovery of colossal magnetoresistance (CMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ca
###Low Field Magnetotransport in Manganites|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(425572, 425572)
 The perovskite manganites of general formula RE1-xAexMnO3 (RE rareearth,AE<missing VAR>Ca, Sr, Ba and Pb)have drawn considerable attention, especiallyfollowing the discovery of colossal magnetoresistance (CMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr
###Low Field Magnetotransport in Manganites|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(425575, 425575)
 The perovskite manganites of general formula RE1-xAexMnO3 (RE rareearth,AE<missing VAR>Ca, Sr, Ba and Pb)have drawn considerable attention, especiallyfollowing the discovery of colossal magnetoresistance (CMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ba
###Low Field Magnetotransport in Manganites|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(425578, 425578)
 The perovskite manganites of general formula RE1-xAexMnO3 (RE rareearth,AE<missing VAR>Ca, Sr, Ba and Pb)have drawn considerable attention, especiallyfollowing the discovery of colossal magnetoresistance (CMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pb
###Low Field Magnetotransport in Manganites|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(425582, 425582)
 The perovskite manganites of general formula RE1-xAexMnO3 (RE rareearth,AE<missing VAR>Ca, Sr, Ba and Pb)have drawn considerable attention, especiallyfollowing the discovery of colossal magnetoresistance (CMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Low Field Magnetotransport in Manganites|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(425609, 425609)
 The perovskite manganites of general formula RE1-xAexMnO3 (RE rareearth,AE<missing VAR>Ca, Sr, Ba and Pb)have drawn considerable attention, especiallyfollowing the discovery of colossal magnetoresistance (CMR).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Low Field Magnetotransport in Manganites|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(425630, 425630)
 They exhibitextraordinary large magnetoresistance pronounced as CMR in the vicinity ofinsulator-metal/paramagnetic-ferromagnetic transition at a relatively largeapplied magnetic fields.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Low Field Magnetotransport in Manganites|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(425686, 425686)
 However, for applied aspectes, occurence ofsignificant CMR at low applied magnetic fields would be required.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Low Field Magnetotransport in Manganites|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(425722, 425722)
 This reviewconsists of of two sections In the first section we have extensively reviewedthe salient features e.g.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Low Field Magnetotransport in Manganites|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(425789, 425789)
 structure, phase diagram, double exchange mechansim,Jahn Teller effect, different types of ordering and phase separation of CMRmangnaites.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Low Field Magnetotransport in Manganites|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(425819, 425819)
 The second is devoted to an overview of experimental results on CMRand related magnetotransport characteristics at low magnetic fields for dopedmanganites such as polycrystalline La0.67Ca0.33MnO3 films, Ag admixedLa0.67Ca0.33MnO3 films, polycrystalline (La0.7Ca0.2Ba0.1MnO3)andepitaxial (La0.67Ca0.33MnO3) films on different substrates, nanophasicLa0.7Ca0.3MnO3, mangnaite-polymer composites (La0.7Ba0.2Sr0.1MnO3-PMMAand La0.67Ca0.33MnO3-PMMA)and double layered polycrystalline(La1.4Ca1.6-xBax<missing VAR>Mn2O7) and films (La1.4Ca1.6Mn2O7).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.67Ca0.33MnO3
###Low Field Magnetotransport in Manganites|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(425853, 425859)
 The second is devoted to an overview of experimental results on CMRand related magnetotransport characteristics at low magnetic fields for dopedmanganites such as polycrystalline La0.67Ca0.33MnO3 films, Ag admixedLa0.67Ca0.33MnO3 films, polycrystalline (La0.7Ca0.2Ba0.1MnO3)andepitaxial (La0.67Ca0.33MnO3) films on different substrates, nanophasicLa0.7Ca0.3MnO3, mangnaite-polymer composites (La0.7Ba0.2Sr0.1MnO3-PMMAand La0.67Ca0.33MnO3-PMMA)and double layered polycrystalline(La1.4Ca1.6-xBax<missing VAR>Mn2O7) and films (La1.4Ca1.6Mn2O7).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.066,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.134,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ag
###Low Field Magnetotransport in Manganites|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(425864, 425864)
 The second is devoted to an overview of experimental results on CMRand related magnetotransport characteristics at low magnetic fields for dopedmanganites such as polycrystalline La0.67Ca0.33MnO3 films, Ag admixedLa0.67Ca0.33MnO3 films, polycrystalline (La0.7Ca0.2Ba0.1MnO3)andepitaxial (La0.67Ca0.33MnO3) films on different substrates, nanophasicLa0.7Ca0.3MnO3, mangnaite-polymer composites (La0.7Ba0.2Sr0.1MnO3-PMMAand La0.67Ca0.33MnO3-PMMA)and double layered polycrystalline(La1.4Ca1.6-xBax<missing VAR>Mn2O7) and films (La1.4Ca1.6Mn2O7).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.67Ca0.33MnO3
###Low Field Magnetotransport in Manganites|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(425869, 425875)
 The second is devoted to an overview of experimental results on CMRand related magnetotransport characteristics at low magnetic fields for dopedmanganites such as polycrystalline La0.67Ca0.33MnO3 films, Ag admixedLa0.67Ca0.33MnO3 films, polycrystalline (La0.7Ca0.2Ba0.1MnO3)andepitaxial (La0.67Ca0.33MnO3) films on different substrates, nanophasicLa0.7Ca0.3MnO3, mangnaite-polymer composites (La0.7Ba0.2Sr0.1MnO3-PMMAand La0.67Ca0.33MnO3-PMMA)and double layered polycrystalline(La1.4Ca1.6-xBax<missing VAR>Mn2O7) and films (La1.4Ca1.6Mn2O7).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.066,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.134,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(La0.7Ca0.2Ba0.1MnO3)
###Low Field Magnetotransport in Manganites|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(425882, 425892)
 The second is devoted to an overview of experimental results on CMRand related magnetotransport characteristics at low magnetic fields for dopedmanganites such as polycrystalline La0.67Ca0.33MnO3 films, Ag admixedLa0.67Ca0.33MnO3 films, polycrystalline (La0.7Ca0.2Ba0.1MnO3)andepitaxial (La0.67Ca0.33MnO3) films on different substrates, nanophasicLa0.7Ca0.3MnO3, mangnaite-polymer composites (La0.7Ba0.2Sr0.1MnO3-PMMAand La0.67Ca0.33MnO3-PMMA)and double layered polycrystalline(La1.4Ca1.6-xBax<missing VAR>Mn2O7) and films (La1.4Ca1.6Mn2O7).
Featurization successful!
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.04,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.02,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(La0.67Ca0.33MnO3)
###Low Field Magnetotransport in Manganites|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(425898, 425906)
 The second is devoted to an overview of experimental results on CMRand related magnetotransport characteristics at low magnetic fields for dopedmanganites such as polycrystalline La0.67Ca0.33MnO3 films, Ag admixedLa0.67Ca0.33MnO3 films, polycrystalline (La0.7Ca0.2Ba0.1MnO3)andepitaxial (La0.67Ca0.33MnO3) films on different substrates, nanophasicLa0.7Ca0.3MnO3, mangnaite-polymer composites (La0.7Ba0.2Sr0.1MnO3-PMMAand La0.67Ca0.33MnO3-PMMA)and double layered polycrystalline(La1.4Ca1.6-xBax<missing VAR>Mn2O7) and films (La1.4Ca1.6Mn2O7).
Featurization successful!
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.066,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.134,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.7Ca0.3MnO3
###Low Field Magnetotransport in Manganites|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(425920, 425926)
 The second is devoted to an overview of experimental results on CMRand related magnetotransport characteristics at low magnetic fields for dopedmanganites such as polycrystalline La0.67Ca0.33MnO3 films, Ag admixedLa0.67Ca0.33MnO3 films, polycrystalline (La0.7Ca0.2Ba0.1MnO3)andepitaxial (La0.67Ca0.33MnO3) films on different substrates, nanophasicLa0.7Ca0.3MnO3, mangnaite-polymer composites (La0.7Ba0.2Sr0.1MnO3-PMMAand La0.67Ca0.33MnO3-PMMA)and double layered polycrystalline(La1.4Ca1.6-xBax<missing VAR>Mn2O7) and films (La1.4Ca1.6Mn2O7).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.7Ba0.2Sr0.1MnO3
###Low Field Magnetotransport in Manganites|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(425936, 425944)
 The second is devoted to an overview of experimental results on CMRand related magnetotransport characteristics at low magnetic fields for dopedmanganites such as polycrystalline La0.67Ca0.33MnO3 films, Ag admixedLa0.67Ca0.33MnO3 films, polycrystalline (La0.7Ca0.2Ba0.1MnO3)andepitaxial (La0.67Ca0.33MnO3) films on different substrates, nanophasicLa0.7Ca0.3MnO3, mangnaite-polymer composites (La0.7Ba0.2Sr0.1MnO3-PMMAand La0.67Ca0.33MnO3-PMMA)and double layered polycrystalline(La1.4Ca1.6-xBax<missing VAR>Mn2O7) and films (La1.4Ca1.6Mn2O7).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.02,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.04,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Low Field Magnetotransport in Manganites|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(425946, 425946)
 The second is devoted to an overview of experimental results on CMRand related magnetotransport characteristics at low magnetic fields for dopedmanganites such as polycrystalline La0.67Ca0.33MnO3 films, Ag admixedLa0.67Ca0.33MnO3 films, polycrystalline (La0.7Ca0.2Ba0.1MnO3)andepitaxial (La0.67Ca0.33MnO3) films on different substrates, nanophasicLa0.7Ca0.3MnO3, mangnaite-polymer composites (La0.7Ba0.2Sr0.1MnO3-PMMAand La0.67Ca0.33MnO3-PMMA)and double layered polycrystalline(La1.4Ca1.6-xBax<missing VAR>Mn2O7) and films (La1.4Ca1.6Mn2O7).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.67Ca0.33MnO3
###Low Field Magnetotransport in Manganites|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(425954, 425960)
 The second is devoted to an overview of experimental results on CMRand related magnetotransport characteristics at low magnetic fields for dopedmanganites such as polycrystalline La0.67Ca0.33MnO3 films, Ag admixedLa0.67Ca0.33MnO3 films, polycrystalline (La0.7Ca0.2Ba0.1MnO3)andepitaxial (La0.67Ca0.33MnO3) films on different substrates, nanophasicLa0.7Ca0.3MnO3, mangnaite-polymer composites (La0.7Ba0.2Sr0.1MnO3-PMMAand La0.67Ca0.33MnO3-PMMA)and double layered polycrystalline(La1.4Ca1.6-xBax<missing VAR>Mn2O7) and films (La1.4Ca1.6Mn2O7).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.066,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.134,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Low Field Magnetotransport in Manganites|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(425962, 425962)
 The second is devoted to an overview of experimental results on CMRand related magnetotransport characteristics at low magnetic fields for dopedmanganites such as polycrystalline La0.67Ca0.33MnO3 films, Ag admixedLa0.67Ca0.33MnO3 films, polycrystalline (La0.7Ca0.2Ba0.1MnO3)andepitaxial (La0.67Ca0.33MnO3) films on different substrates, nanophasicLa0.7Ca0.3MnO3, mangnaite-polymer composites (La0.7Ba0.2Sr0.1MnO3-PMMAand La0.67Ca0.33MnO3-PMMA)and double layered polycrystalline(La1.4Ca1.6-xBax<missing VAR>Mn2O7) and films (La1.4Ca1.6Mn2O7).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La1.4Ca1.6-xBa
###Low Field Magnetotransport in Manganites|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(425977, 425983)
 The second is devoted to an overview of experimental results on CMRand related magnetotransport characteristics at low magnetic fields for dopedmanganites such as polycrystalline La0.67Ca0.33MnO3 films, Ag admixedLa0.67Ca0.33MnO3 films, polycrystalline (La0.7Ca0.2Ba0.1MnO3)andepitaxial (La0.67Ca0.33MnO3) films on different substrates, nanophasicLa0.7Ca0.3MnO3, mangnaite-polymer composites (La0.7Ba0.2Sr0.1MnO3-PMMAand La0.67Ca0.33MnO3-PMMA)and double layered polycrystalline(La1.4Ca1.6-xBax<missing VAR>Mn2O7) and films (La1.4Ca1.6Mn2O7).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

O7
###Low Field Magnetotransport in Manganites|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(425987, 425988)
 The second is devoted to an overview of experimental results on CMRand related magnetotransport characteristics at low magnetic fields for dopedmanganites such as polycrystalline La0.67Ca0.33MnO3 films, Ag admixedLa0.67Ca0.33MnO3 films, polycrystalline (La0.7Ca0.2Ba0.1MnO3)andepitaxial (La0.67Ca0.33MnO3) films on different substrates, nanophasicLa0.7Ca0.3MnO3, mangnaite-polymer composites (La0.7Ba0.2Sr0.1MnO3-PMMAand La0.67Ca0.33MnO3-PMMA)and double layered polycrystalline(La1.4Ca1.6-xBax<missing VAR>Mn2O7) and films (La1.4Ca1.6Mn2O7).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(La1.4Ca1.6Mn2O7)
###Low Field Magnetotransport in Manganites|P. K. Siwach,H. K. Singh,O. N. Srivastava###
(425995, 426004)
 The second is devoted to an overview of experimental results on CMRand related magnetotransport characteristics at low magnetic fields for dopedmanganites such as polycrystalline La0.67Ca0.33MnO3 films, Ag admixedLa0.67Ca0.33MnO3 films, polycrystalline (La0.7Ca0.2Ba0.1MnO3)andepitaxial (La0.67Ca0.33MnO3) films on different substrates, nanophasicLa0.7Ca0.3MnO3, mangnaite-polymer composites (La0.7Ba0.2Sr0.1MnO3-PMMAand La0.67Ca0.33MnO3-PMMA)and double layered polycrystalline(La1.4Ca1.6-xBax<missing VAR>Mn2O7) and films (La1.4Ca1.6Mn2O7).
Featurization successful!
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0.13333333333333333,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.11666666666666665,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Study of the One- and Two-Band Models for Colossal Magnetoresistive Manganites Using the Truncated Polynomial Expansion Method|C. Sen,G. Alvarez,Y. Motome,N. Furukawa,I. A. Sergienko,T. Schulthess,A. Moreo,E. Dagotto###
(426178, 426178)
 Considerable progress has been recently made in the theoretical understandingof the colossal magnetoresistance (CMR) effect in manganites.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Study of the One- and Two-Band Models for Colossal Magnetoresistive Manganites Using the Truncated Polynomial Expansion Method|C. Sen,G. Alvarez,Y. Motome,N. Furukawa,I. A. Sergienko,T. Schulthess,A. Moreo,E. Dagotto###
(426232, 426232)
 The analysis ofsimple models with two competing states and a resistor network approximation tocalculate conductances has confirmed that CMR effects can be theoreticallyreproduced using non-uniform clustered states.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Study of the One- and Two-Band Models for Colossal Magnetoresistive Manganites Using the Truncated Polynomial Expansion Method|C. Sen,G. Alvarez,Y. Motome,N. Furukawa,I. A. Sergienko,T. Schulthess,A. Moreo,E. Dagotto###
(426258, 426258)
 In this paper, the recentlyproposed Truncated Polynomial Expansion method (TPEM) for spin-fermion systemsis tested using the double-exchange one-band, with finite Hund coupling J<missing VAR>rmH, and two-band, with infinite J<missing VAR>rm H, models.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Study of the One- and Two-Band Models for Colossal Magnetoresistive Manganites Using the Truncated Polynomial Expansion Method|C. Sen,G. Alvarez,Y. Motome,N. Furukawa,I. A. Sergienko,T. Schulthess,A. Moreo,E. Dagotto###
(426325, 426325)
 In this paper, the recentlyproposed Truncated Polynomial Expansion method (TPEM) for spin-fermion systemsis tested using the double-exchange one-band, with finite Hund coupling J<missing VAR>rmH, and two-band, with infinite J<missing VAR>rm H, models.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Study of the One- and Two-Band Models for Colossal Magnetoresistive Manganites Using the Truncated Polynomial Expansion Method|C. Sen,G. Alvarez,Y. Motome,N. Furukawa,I. A. Sergienko,T. Schulthess,A. Moreo,E. Dagotto###
(426342, 426342)
 In this paper, the recentlyproposed Truncated Polynomial Expansion method (TPEM) for spin-fermion systemsis tested using the double-exchange one-band, with finite Hund coupling J<missing VAR>rmH, and two-band, with infinite J<missing VAR>rm H, models.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Study of the One- and Two-Band Models for Colossal Magnetoresistive Manganites Using the Truncated Polynomial Expansion Method|C. Sen,G. Alvarez,Y. Motome,N. Furukawa,I. A. Sergienko,T. Schulthess,A. Moreo,E. Dagotto###
(426397, 426397)
 Two dimensional latticesas large as 48times48 are studied, far larger than those that can be handledwith standard exact diagonalization (D<missing VAR>IAG) techniques for the fermionic sector.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Study of the One- and Two-Band Models for Colossal Magnetoresistive Manganites Using the Truncated Polynomial Expansion Method|C. Sen,G. Alvarez,Y. Motome,N. Furukawa,I. A. Sergienko,T. Schulthess,A. Moreo,E. Dagotto###
(426554, 426554)
 However, at temperatures above the Curie transitionthe effect is much smaller confirming that the standard finite-temperature CMRphenomenon cannot be understood using homogeneous states.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Study of the One- and Two-Band Models for Colossal Magnetoresistive Manganites Using the Truncated Polynomial Expansion Method|C. Sen,G. Alvarez,Y. Motome,N. Furukawa,I. A. Sergienko,T. Schulthess,A. Moreo,E. Dagotto###
(426598, 426598)
 By comparing resultsbetween the two methods, TPEM and D<missing VAR>IAG<missing VAR>, on small lattices, and by analyzing thesystematic behavior with increasing cluster sizes, it is concluded that theTPEM is accurate to handle realistic manganite models on large systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ce
###Non-Fermi liquid behavior in the magnetotransport of CeMIn5 (M: Co and Rh): Striking similarity between quasi 2D heavy fermion and high-Tc cuprates|Y. Nakajima,H. Shishido,H. Nakai,T. Shibauch,K. Behnia,K. Izawa,M. Hedo,Y. Uwatoko,T. Matsumoto,R. Settai,Y. Onuki,H. Kontani,Y. Matsuda###
(426753, 426753)
Non-Fermi liquid behavior in the magnetotransport of CeM<missing VAR>In5 (M<missing VAR> Co and Rh) Striking similarity between quasi 2D heavy fermion and high-Tc cuprates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 2, 'D', 0],[77.0, 2, 'D', 1],[270.0, 2, ',', 5],[421.0, 2, 'D', 8]

In5
###Non-Fermi liquid behavior in the magnetotransport of CeMIn5 (M: Co and Rh): Striking similarity between quasi 2D heavy fermion and high-Tc cuprates|Y. Nakajima,H. Shishido,H. Nakai,T. Shibauch,K. Behnia,K. Izawa,M. Hedo,Y. Uwatoko,T. Matsumoto,R. Settai,Y. Onuki,H. Kontani,Y. Matsuda###
(426755, 426756)
Non-Fermi liquid behavior in the magnetotransport of CeM<missing VAR>In5 (M<missing VAR> Co and Rh) Striking similarity between quasi 2D heavy fermion and high-Tc cuprates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 2, 'D', 0],[74.0, 2, 'D', 1],[267.0, 2, ',', 5],[418.0, 2, 'D', 8]

Co
###Non-Fermi liquid behavior in the magnetotransport of CeMIn5 (M: Co and Rh): Striking similarity between quasi 2D heavy fermion and high-Tc cuprates|Y. Nakajima,H. Shishido,H. Nakai,T. Shibauch,K. Behnia,K. Izawa,M. Hedo,Y. Uwatoko,T. Matsumoto,R. Settai,Y. Onuki,H. Kontani,Y. Matsuda###
(426761, 426761)
Non-Fermi liquid behavior in the magnetotransport of CeM<missing VAR>In5 (M<missing VAR> Co and Rh) Striking similarity between quasi 2D heavy fermion and high-Tc cuprates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 2, 'D', 0],[69.0, 2, 'D', 1],[262.0, 2, ',', 5],[413.0, 2, 'D', 8]

Rh
###Non-Fermi liquid behavior in the magnetotransport of CeMIn5 (M: Co and Rh): Striking similarity between quasi 2D heavy fermion and high-Tc cuprates|Y. Nakajima,H. Shishido,H. Nakai,T. Shibauch,K. Behnia,K. Izawa,M. Hedo,Y. Uwatoko,T. Matsumoto,R. Settai,Y. Onuki,H. Kontani,Y. Matsuda###
(426765, 426765)
Non-Fermi liquid behavior in the magnetotransport of CeM<missing VAR>In5 (M<missing VAR> Co and Rh) Striking similarity between quasi 2D heavy fermion and high-Tc cuprates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 2, 'D', 0],[65.0, 2, 'D', 1],[258.0, 2, ',', 5],[409.0, 2, 'D', 8]

Tc
###Non-Fermi liquid behavior in the magnetotransport of CeMIn5 (M: Co and Rh): Striking similarity between quasi 2D heavy fermion and high-Tc cuprates|Y. Nakajima,H. Shishido,H. Nakai,T. Shibauch,K. Behnia,K. Izawa,M. Hedo,Y. Uwatoko,T. Matsumoto,R. Settai,Y. Onuki,H. Kontani,Y. Matsuda###
(426785, 426785)
Non-Fermi liquid behavior in the magnetotransport of CeM<missing VAR>In5 (M<missing VAR> Co and Rh) Striking similarity between quasi 2D heavy fermion and high-Tc cuprates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 2, 'D', 0],[45.0, 2, 'D', 1],[238.0, 2, ',', 5],[389.0, 2, 'D', 8]

Ce
###Non-Fermi liquid behavior in the magnetotransport of CeMIn5 (M: Co and Rh): Striking similarity between quasi 2D heavy fermion and high-Tc cuprates|Y. Nakajima,H. Shishido,H. Nakai,T. Shibauch,K. Behnia,K. Izawa,M. Hedo,Y. Uwatoko,T. Matsumoto,R. Settai,Y. Onuki,H. Kontani,Y. Matsuda###
(426839, 426839)
 We present a systematic study of the dc-resistivity, Hall effect, andmagnetoresistance in the normal state of quasi 2D heavy fermion superconductorsCeM<missing VAR>In5 (M<missing VAR> Rh and Co) under pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 2, 'D', 1],[9.0, 2, 'D', 0],[184.0, 2, ',', 4],[335.0, 2, 'D', 7]

In5
###Non-Fermi liquid behavior in the magnetotransport of CeMIn5 (M: Co and Rh): Striking similarity between quasi 2D heavy fermion and high-Tc cuprates|Y. Nakajima,H. Shishido,H. Nakai,T. Shibauch,K. Behnia,K. Izawa,M. Hedo,Y. Uwatoko,T. Matsumoto,R. Settai,Y. Onuki,H. Kontani,Y. Matsuda###
(426841, 426842)
 We present a systematic study of the dc-resistivity, Hall effect, andmagnetoresistance in the normal state of quasi 2D heavy fermion superconductorsCeM<missing VAR>In5 (M<missing VAR> Rh and Co) under pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 2, 'D', 1],[11.0, 2, 'D', 0],[181.0, 2, ',', 4],[332.0, 2, 'D', 7]

Rh
###Non-Fermi liquid behavior in the magnetotransport of CeMIn5 (M: Co and Rh): Striking similarity between quasi 2D heavy fermion and high-Tc cuprates|Y. Nakajima,H. Shishido,H. Nakai,T. Shibauch,K. Behnia,K. Izawa,M. Hedo,Y. Uwatoko,T. Matsumoto,R. Settai,Y. Onuki,H. Kontani,Y. Matsuda###
(426847, 426847)
 We present a systematic study of the dc-resistivity, Hall effect, andmagnetoresistance in the normal state of quasi 2D heavy fermion superconductorsCeM<missing VAR>In5 (M<missing VAR> Rh and Co) under pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 2, 'D', 1],[17.0, 2, 'D', 0],[176.0, 2, ',', 4],[327.0, 2, 'D', 7]

Co
###Non-Fermi liquid behavior in the magnetotransport of CeMIn5 (M: Co and Rh): Striking similarity between quasi 2D heavy fermion and high-Tc cuprates|Y. Nakajima,H. Shishido,H. Nakai,T. Shibauch,K. Behnia,K. Izawa,M. Hedo,Y. Uwatoko,T. Matsumoto,R. Settai,Y. Onuki,H. Kontani,Y. Matsuda###
(426851, 426851)
 We present a systematic study of the dc-resistivity, Hall effect, andmagnetoresistance in the normal state of quasi 2D heavy fermion superconductorsCeM<missing VAR>In5 (M<missing VAR> Rh and Co) under pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 2, 'D', 1],[21.0, 2, 'D', 0],[172.0, 2, ',', 4],[323.0, 2, 'D', 7]

F
###Non-Fermi liquid behavior in the magnetotransport of CeMIn5 (M: Co and Rh): Striking similarity between quasi 2D heavy fermion and high-Tc cuprates|Y. Nakajima,H. Shishido,H. Nakai,T. Shibauch,K. Behnia,K. Izawa,M. Hedo,Y. Uwatoko,T. Matsumoto,R. Settai,Y. Onuki,H. Kontani,Y. Matsuda###
(426882, 426882)
 Here the electronic system evolves withpressure from an antiferromagnetic (AF) metal, through a highly unconventionalnon-Fermi liquid, and finally into a Fermi-liquid state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 2, 'D', 2],[52.0, 2, 'D', 1],[141.0, 2, ',', 3],[292.0, 2, 'D', 6]

H
###Non-Fermi liquid behavior in the magnetotransport of CeMIn5 (M: Co and Rh): Striking similarity between quasi 2D heavy fermion and high-Tc cuprates|Y. Nakajima,H. Shishido,H. Nakai,T. Shibauch,K. Behnia,K. Izawa,M. Hedo,Y. Uwatoko,T. Matsumoto,R. Settai,Y. Onuki,H. Kontani,Y. Matsuda###
(426986, 426986)
 Furthermore, themagnetoresistance is characterized by T<missing VAR>- and H-dependence which clearly violateKohlers<missing VAR> rule.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[211.0, 2, 'D', 4],[156.0, 2, 'D', 3],[37.0, 2, ',', 1],[188.0, 2, 'D', 4]

F
###Non-Fermi liquid behavior in the magnetotransport of CeMIn5 (M: Co and Rh): Striking similarity between quasi 2D heavy fermion and high-Tc cuprates|Y. Nakajima,H. Shishido,H. Nakai,T. Shibauch,K. Behnia,K. Izawa,M. Hedo,Y. Uwatoko,T. Matsumoto,R. Settai,Y. Onuki,H. Kontani,Y. Matsuda###
(427094, 427094)
 These non-Fermi liquid properties inthe electron transport are remarkably pronounced when the AF fluctuations areenhanced in the vicinity of the Q<missing VAR>CP.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[319.0, 2, 'D', 6],[264.0, 2, 'D', 5],[71.0, 2, ',', 1],[80.0, 2, 'D', 2]

CP
###Non-Fermi liquid behavior in the magnetotransport of CeMIn5 (M: Co and Rh): Striking similarity between quasi 2D heavy fermion and high-Tc cuprates|Y. Nakajima,H. Shishido,H. Nakai,T. Shibauch,K. Behnia,K. Izawa,M. Hedo,Y. Uwatoko,T. Matsumoto,R. Settai,Y. Onuki,H. Kontani,Y. Matsuda###
(427114, 427115)
 These non-Fermi liquid properties inthe electron transport are remarkably pronounced when the AF fluctuations areenhanced in the vicinity of the Q<missing VAR>CP.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[339.0, 2, 'D', 6],[284.0, 2, 'D', 5],[91.0, 2, ',', 1],[59.0, 2, 'D', 2]

Tc
###Non-Fermi liquid behavior in the magnetotransport of CeMIn5 (M: Co and Rh): Striking similarity between quasi 2D heavy fermion and high-Tc cuprates|Y. Nakajima,H. Shishido,H. Nakai,T. Shibauch,K. Behnia,K. Izawa,M. Hedo,Y. Uwatoko,T. Matsumoto,R. Settai,Y. Onuki,H. Kontani,Y. Matsuda###
(427153, 427153)
 We lay particular emphasis on the strikingresemblance of these anomalous magnetotransport with those of the high-Tccuprates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[378.0, 2, 'D', 7],[323.0, 2, 'D', 6],[130.0, 2, ',', 2],[21.0, 2, 'D', 1]

Tb7Rh3
###Magnetic and magnetoresistance behavior of Tb7Rh3, an intermetallic compound with a negative temperature coefficient of electrical resistivity in the paramagnetic state, and Paramagnetic Giant Magnetoresistance Phenomenon|Kausik Sengupta,Kartik K Iyer,E. V. Sampathkumaran###
(427225, 427228)
Magnetic and magnetoresistance behavior of Tb7Rh3, an intermetallic compound with a negative temperature coefficient of electrical resistivity in the paramagnetic state, and Paramagnetic Giant Magnetoresistance Phenomenon.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 90, 'K', 2]

K
###Magnetic and magnetoresistance behavior of Tb7Rh3, an intermetallic compound with a negative temperature coefficient of electrical resistivity in the paramagnetic state, and Paramagnetic Giant Magnetoresistance Phenomenon|Kausik Sengupta,Kartik K Iyer,E. V. Sampathkumaran###
(427304, 427304)
 The results of dc magnetization, electrical and magnetoresistance and heatcapacity measurements (2-300 K) on Tb7Rh3, crystallizing in Th7Fe3-typehexagonal structure, are reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 90, 'K', 1]

Tb7Rh3
###Magnetic and magnetoresistance behavior of Tb7Rh3, an intermetallic compound with a negative temperature coefficient of electrical resistivity in the paramagnetic state, and Paramagnetic Giant Magnetoresistance Phenomenon|Kausik Sengupta,Kartik K Iyer,E. V. Sampathkumaran###
(427309, 427312)
 The results of dc magnetization, electrical and magnetoresistance and heatcapacity measurements (2-300 K) on Tb7Rh3, crystallizing in Th7Fe3-typehexagonal structure, are reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 90, 'K', 1]

Th7Fe3
###Magnetic and magnetoresistance behavior of Tb7Rh3, an intermetallic compound with a negative temperature coefficient of electrical resistivity in the paramagnetic state, and Paramagnetic Giant Magnetoresistance Phenomenon|Kausik Sengupta,Kartik K Iyer,E. V. Sampathkumaran###
(427319, 427322)
 The results of dc magnetization, electrical and magnetoresistance and heatcapacity measurements (2-300 K) on Tb7Rh3, crystallizing in Th7Fe3-typehexagonal structure, are reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 90, 'K', 1]

In
###Magnetic and magnetoresistance behavior of Tb7Rh3, an intermetallic compound with a negative temperature coefficient of electrical resistivity in the paramagnetic state, and Paramagnetic Giant Magnetoresistance Phenomenon|Kausik Sengupta,Kartik K Iyer,E. V. Sampathkumaran###
(427337, 427337)
 In this compound, magnetic ordering sets inaround 90 K with additional transitions at low temperatures and the temperaturecoefficient of resistivity (R), dR/dT, is negative over a wide temperaturerange in the paramagnetic state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 90, 'K', 0]

As
###Magnetic and magnetoresistance behavior of Tb7Rh3, an intermetallic compound with a negative temperature coefficient of electrical resistivity in the paramagnetic state, and Paramagnetic Giant Magnetoresistance Phenomenon|Kausik Sengupta,Kartik K Iyer,E. V. Sampathkumaran###
(427519, 427519)
 As a result, the magnitude of themagnetoresistance (MR) is rather large even in the vicinity of room temperature(far above magnetic ordering temperature), in addition to giant MR behavior inthe magnetically ordered state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 90, 'K', 3]

(Si)
###Electronic measurement and control of spin transport in Silicon|Ian Appelbaum,Biqin Huang,Douwe Monsma###
(427877, 427879)
 Most notable in this groupis silicon (Si), which (in addition to its market entrenchment in electronics)has long been predicted a superior semiconductor for spintronics with enhancedlifetime and diffusion length due to low spin-orbit scattering and latticeinversion symmetry.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 10, 'microns', 2]

Si
###Electronic measurement and control of spin transport in Silicon|Ian Appelbaum,Biqin Huang,Douwe Monsma###
(427980, 427980)
 Despite its exciting promise, a demonstration of coherentspin transport in Si has remained elusive, because most experiments focused onmagnetoresistive devices; these methods fail because of universal impedancemismatch obstacles, and are obscured by Lorentz magnetoresistance and Halleffects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 10, 'microns', 1]

Si
###Electronic measurement and control of spin transport in Silicon|Ian Appelbaum,Biqin Huang,Douwe Monsma###
(428065, 428065)
 Here we demonstrate conduction band spin transport across 10 micronsundoped Si, by using spin-dependent ballistic hot-electron filtering throughferromagnetic thin films for both spin-injection and detection.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 10, 'microns', 0]

C
###The nanoscale phase separation in hole-doped manganites|R. Mathieu,Y. Tokura###
(428289, 428289)
 A macroscopic phase separation, in which ferromagnetic clusters are observedin an insulating matrix, is sometimes observed, and believed to be essential tothe colossal magnetoresistive (CMR) properties of manganese oxides.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pr0.75Sr0.25MnO3
###Half Metallicity in Pr$_{0.75}$Sr$_{0.25}$MnO$_3$: A first Principle study|M. Chakraborty,P. Pal,B. R. Sekhar###
(428708, 428714)
Half Metallicity in Pr0.75Sr0.25MnO3 A first Principle study.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.05,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[247.0, 12191, ';', 15],[339.0, 2.8, 'eV', 19]

In
###Half Metallicity in Pr$_{0.75}$Sr$_{0.25}$MnO$_3$: A first Principle study|M. Chakraborty,P. Pal,B. R. Sekhar###
(428725, 428725)
 In this communication we present a first principle study ofPr1-xSrx<missing VAR>MnO3 with x<missing VAR>  0.25.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[236.0, 12191, ';', 14],[328.0, 2.8, 'eV', 18]

Pr1-xSr
###Half Metallicity in Pr$_{0.75}$Sr$_{0.25}$MnO$_3$: A first Principle study|M. Chakraborty,P. Pal,B. R. Sekhar###
(428746, 428750)
 In this communication we present a first principle study ofPr1-xSrx<missing VAR>MnO3 with x<missing VAR>  0.25.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[211.0, 12191, ';', 14],[303.0, 2.8, 'eV', 18]

MnO3
###Half Metallicity in Pr$_{0.75}$Sr$_{0.25}$MnO$_3$: A first Principle study|M. Chakraborty,P. Pal,B. R. Sekhar###
(428752, 428754)
 In this communication we present a first principle study ofPr1-xSrx<missing VAR>MnO3 with x<missing VAR>  0.25.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[207.0, 12191, ';', 14],[299.0, 2.8, 'eV', 18]

Pr1-xSr
###Half Metallicity in Pr$_{0.75}$Sr$_{0.25}$MnO$_3$: A first Principle study|M. Chakraborty,P. Pal,B. R. Sekhar###
(428825, 428829)
 While the parent compounds of thissystem are antiferromagnetic insulators with different structural and magneticground states, the x<missing VAR>  0.25 is in the colossal magnetoresistance regime ofthe Pr1-xSrx<missing VAR>MnO3 phase diagram [C.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[132.0, 12191, ';', 13],[224.0, 2.8, 'eV', 17]

MnO3
###Half Metallicity in Pr$_{0.75}$Sr$_{0.25}$MnO$_3$: A first Principle study|M. Chakraborty,P. Pal,B. R. Sekhar###
(428831, 428833)
 While the parent compounds of thissystem are antiferromagnetic insulators with different structural and magneticground states, the x<missing VAR>  0.25 is in the colossal magnetoresistance regime ofthe Pr1-xSrx<missing VAR>MnO3 phase diagram [C.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 12191, ';', 13],[220.0, 2.8, 'eV', 17]

C
###Half Metallicity in Pr$_{0.75}$Sr$_{0.25}$MnO$_3$: A first Principle study|M. Chakraborty,P. Pal,B. R. Sekhar###
(428840, 428840)
 While the parent compounds of thissystem are antiferromagnetic insulators with different structural and magneticground states, the x<missing VAR>  0.25 is in the colossal magnetoresistance regime ofthe Pr1-xSrx<missing VAR>MnO3 phase diagram [C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 12191, ';', 13],[213.0, 2.8, 'eV', 17]

B
###Half Metallicity in Pr$_{0.75}$Sr$_{0.25}$MnO$_3$: A first Principle study|M. Chakraborty,P. Pal,B. R. Sekhar###
(428859, 428859)
 Hervieu,B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 12191, ';', 10],[194.0, 2.8, 'eV', 14]

B
###Half Metallicity in Pr$_{0.75}$Sr$_{0.25}$MnO$_3$: A first Principle study|M. Chakraborty,P. Pal,B. R. Sekhar###
(428871, 428871)
 B 60 (1999) 12191].
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 12191, ';', 7],[182.0, 2.8, 'eV', 11]

C
###Half Metallicity in Pr$_{0.75}$Sr$_{0.25}$MnO$_3$: A first Principle study|M. Chakraborty,P. Pal,B. R. Sekhar###
(428922, 428922)
 Our band structure calculations forthe end-point compounds matches well with the existing theoretical andexperimental results [C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 12191, ';', 6],[131.0, 2.8, 'eV', 10]

B
###Half Metallicity in Pr$_{0.75}$Sr$_{0.25}$MnO$_3$: A first Principle study|M. Chakraborty,P. Pal,B. R. Sekhar###
(428940, 428940)
 Hervieu, B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 12191, ';', 3],[113.0, 2.8, 'eV', 7]

B
###Half Metallicity in Pr$_{0.75}$Sr$_{0.25}$MnO$_3$: A first Principle study|M. Chakraborty,P. Pal,B. R. Sekhar###
(428953, 428953)
B 60 (1999) 12191; Rune Sondena, P.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 12191, ';', 0],[100.0, 2.8, 'eV', 4]

P
###Half Metallicity in Pr$_{0.75}$Sr$_{0.25}$MnO$_3$: A first Principle study|M. Chakraborty,P. Pal,B. R. Sekhar###
(428969, 428969)
B 60 (1999) 12191; Rune Sondena, P.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 12191, ';', 0],[84.0, 2.8, 'eV', 4]

B
###Half Metallicity in Pr$_{0.75}$Sr$_{0.25}$MnO$_3$: A first Principle study|M. Chakraborty,P. Pal,B. R. Sekhar###
(428997, 428997)
 B 74 (2006) 144102].
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 12191, ';', 3],[56.0, 2.8, 'eV', 1]

Pr0.75Sr0.25MnO3
###Half Metallicity in Pr$_{0.75}$Sr$_{0.25}$MnO$_3$: A first Principle study|M. Chakraborty,P. Pal,B. R. Sekhar###
(429023, 429029)
 Interestingly, ourcalculations show that the Pr0.75Sr0.25MnO3 has a half-metalliccharacter with a huge band gap of 2.8 eV in the minority band.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.05,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 12191, ';', 4],[24.0, 2.8, 'eV', 0]

Pr0.75Sr0.25MnO3
###Half Metallicity in Pr$_{0.75}$Sr$_{0.25}$MnO$_3$: A first Principle study|M. Chakraborty,P. Pal,B. R. Sekhar###
(429137, 429143)
 We discuss the half-metallicity of thePr0.75Sr0.25MnO3 in the light of changes in the orbitalhybridization as a result of Sr doping in PrMnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.05,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[176.0, 12191, ';', 6],[84.0, 2.8, 'eV', 2]

Sr
###Half Metallicity in Pr$_{0.75}$Sr$_{0.25}$MnO$_3$: A first Principle study|M. Chakraborty,P. Pal,B. R. Sekhar###
(429172, 429172)
 We discuss the half-metallicity of thePr0.75Sr0.25MnO3 in the light of changes in the orbitalhybridization as a result of Sr doping in PrMnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[211.0, 12191, ';', 6],[119.0, 2.8, 'eV', 2]

PrMnO3
###Half Metallicity in Pr$_{0.75}$Sr$_{0.25}$MnO$_3$: A first Principle study|M. Chakraborty,P. Pal,B. R. Sekhar###
(429178, 429181)
 We discuss the half-metallicity of thePr0.75Sr0.25MnO3 in the light of changes in the orbitalhybridization as a result of Sr doping in PrMnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[217.0, 12191, ';', 6],[125.0, 2.8, 'eV', 2]

Pr0.5Ca0.5MnO3-d
###Possible magnetoelectric coupling in the half doped charge ordered manganite, Pr_0.5Ca_0.5MnO_3-d|A. Karmakar,S. Majumdar,A. K. Singh,S. Patnaik,S. Giri###
(429249, 429257)
Possible magnetoelectric coupling in the half doped charge ordered manganite, Pr0.5Ca0.5MnO3-d.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[186.0, 280, 'K', 4],[216.0, 180, 'K', 5],[220.0, 200, 'K', 5]

Pr0.5Ca0.5MnO3
###Possible magnetoelectric coupling in the half doped charge ordered manganite, Pr_0.5Ca_0.5MnO_3-d|A. Karmakar,S. Majumdar,A. K. Singh,S. Patnaik,S. Giri###
(429296, 429302)
 Magnetization, magnetoresistance, and magnetodielectric measurements havebeen carried out on the half doped charge ordered manganite, Pr0.5Ca0.5MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 280, 'K', 3],[171.0, 180, 'K', 4],[175.0, 200, 'K', 4]

S
###Spin-Transfer Torque and Magnetoresistance in Superconducting Spin-Valves|J. Linder,T. Yokoyama,A. Sudbø###
(429923, 429923)
 Moreover, we find that themagnetoresistance displays a strong oscillatory and non-monotonous behavior asa function of d<missing VAR>S/xi where d<missing VAR>S and xi are the interlayer width of thesuperconducting region and the superconducting coherence length, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin-Transfer Torque and Magnetoresistance in Superconducting Spin-Valves|J. Linder,T. Yokoyama,A. Sudbø###
(429930, 429930)
 Moreover, we find that themagnetoresistance displays a strong oscillatory and non-monotonous behavior asa function of d<missing VAR>S/xi where d<missing VAR>S and xi are the interlayer width of thesuperconducting region and the superconducting coherence length, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin-Transfer Torque and Magnetoresistance in Superconducting Spin-Valves|J. Linder,T. Yokoyama,A. Sudbø###
(429993, 429993)
This feature is also attributed to the crossover from layers of size d<missing VAR>Ssim2xi to layers of size d<missing VAR>Sgg 2xi, where the contribution to transport fromzero-energy states gradually vanishes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin-Transfer Torque and Magnetoresistance in Superconducting Spin-Valves|J. Linder,T. Yokoyama,A. Sudbø###
(430009, 430009)
This feature is also attributed to the crossover from layers of size d<missing VAR>Ssim2xi to layers of size d<missing VAR>Sgg 2xi, where the contribution to transport fromzero-energy states gradually vanishes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr1-x
###Anisotropy of the in-plane angular magnetoresistance of electron-doed Sr1-xLaxCuO2 thin films|V. P. Jovanović,L. Fruchter,Z. Z. Li,H. Raffy###
(430068, 430071)
Anisotropy of the in-plane angular magnetoresistance of electron-doed Sr1-xLaxCuO2 thin films.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

CuO2
###Anisotropy of the in-plane angular magnetoresistance of electron-doed Sr1-xLaxCuO2 thin films|V. P. Jovanović,L. Fruchter,Z. Z. Li,H. Raffy###
(430073, 430075)
Anisotropy of the in-plane angular magnetoresistance of electron-doed Sr1-xLaxCuO2 thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Anisotropy of the in-plane angular magnetoresistance of electron-doed Sr1-xLaxCuO2 thin films|V. P. Jovanović,L. Fruchter,Z. Z. Li,H. Raffy###
(430090, 430090)
 Signatures of antiferromagnetism (AF) in the underdoped Ln2-x<missing VAR>CexCuO4 (Ln Nd, Pr,.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CuO4
###Anisotropy of the in-plane angular magnetoresistance of electron-doed Sr1-xLaxCuO2 thin films|V. P. Jovanović,L. Fruchter,Z. Z. Li,H. Raffy###
(430104, 430106)
 Signatures of antiferromagnetism (AF) in the underdoped Ln2-x<missing VAR>CexCuO4 (Ln Nd, Pr,.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nd
###Anisotropy of the in-plane angular magnetoresistance of electron-doed Sr1-xLaxCuO2 thin films|V. P. Jovanović,L. Fruchter,Z. Z. Li,H. Raffy###
(430113, 430113)
 Signatures of antiferromagnetism (AF) in the underdoped Ln2-x<missing VAR>CexCuO4 (Ln Nd, Pr,.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pr
###Anisotropy of the in-plane angular magnetoresistance of electron-doed Sr1-xLaxCuO2 thin films|V. P. Jovanović,L. Fruchter,Z. Z. Li,H. Raffy###
(430116, 430116)
 Signatures of antiferromagnetism (AF) in the underdoped Ln2-x<missing VAR>CexCuO4 (Ln Nd, Pr,.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr1-x
###Anisotropy of the in-plane angular magnetoresistance of electron-doed Sr1-xLaxCuO2 thin films|V. P. Jovanović,L. Fruchter,Z. Z. Li,H. Raffy###
(430177, 430180)
 We have looked for a similar property in a differentelectron-doped cuprate family, Sr1-xLaxCuO2, which consists of CuO2 planesseparated by Sr/La atoms, and is exempt of the possible influence of magneticrare earth ions.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

CuO2
###Anisotropy of the in-plane angular magnetoresistance of electron-doed Sr1-xLaxCuO2 thin films|V. P. Jovanović,L. Fruchter,Z. Z. Li,H. Raffy###
(430182, 430184)
 We have looked for a similar property in a differentelectron-doped cuprate family, Sr1-xLaxCuO2, which consists of CuO2 planesseparated by Sr/La atoms, and is exempt of the possible influence of magneticrare earth ions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CuO2
###Anisotropy of the in-plane angular magnetoresistance of electron-doed Sr1-xLaxCuO2 thin films|V. P. Jovanović,L. Fruchter,Z. Z. Li,H. Raffy###
(430193, 430195)
 We have looked for a similar property in a differentelectron-doped cuprate family, Sr1-xLaxCuO2, which consists of CuO2 planesseparated by Sr/La atoms, and is exempt of the possible influence of magneticrare earth ions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr/La
###Anisotropy of the in-plane angular magnetoresistance of electron-doed Sr1-xLaxCuO2 thin films|V. P. Jovanović,L. Fruchter,Z. Z. Li,H. Raffy###
(430204, 430206)
 We have looked for a similar property in a differentelectron-doped cuprate family, Sr1-xLaxCuO2, which consists of CuO2 planesseparated by Sr/La atoms, and is exempt of the possible influence of magneticrare earth ions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Sr1-x
###Anisotropy of the in-plane angular magnetoresistance of electron-doed Sr1-xLaxCuO2 thin films|V. P. Jovanović,L. Fruchter,Z. Z. Li,H. Raffy###
(430276, 430279)
 We report in-plane magnetoresistance measurements in thenormal state of underdoped, superconducting, c<missing VAR>-axis oriented, epitaxialSr1-xLaxCuO2 thin films.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

CuO2
###Anisotropy of the in-plane angular magnetoresistance of electron-doed Sr1-xLaxCuO2 thin films|V. P. Jovanović,L. Fruchter,Z. Z. Li,H. Raffy###
(430281, 430283)
 We report in-plane magnetoresistance measurements in thenormal state of underdoped, superconducting, c<missing VAR>-axis oriented, epitaxialSr1-xLaxCuO2 thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CuO2
###Anisotropy of the in-plane angular magnetoresistance of electron-doed Sr1-xLaxCuO2 thin films|V. P. Jovanović,L. Fruchter,Z. Z. Li,H. Raffy###
(430369, 430371)
 This probe is sensitive to spin arrangement and wefind that the in-plane magnetoresistance, which is negative and does notsaturate for T<missing VAR>, exhibits an angular dependence when measured upon rotating amagnetic field within the CuO2 planes.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CuO4
###Anisotropy of the in-plane angular magnetoresistance of electron-doed Sr1-xLaxCuO2 thin films|V. P. Jovanović,L. Fruchter,Z. Z. Li,H. Raffy###
(430479, 430481)
 Our results demonstrate that thesemagnetoresistance oscillations, also observed for the Ln2-x<missing VAR>CexCuO4 (Ln  Nd,Pr,.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nd
###Anisotropy of the in-plane angular magnetoresistance of electron-doed Sr1-xLaxCuO2 thin films|V. P. Jovanović,L. Fruchter,Z. Z. Li,H. Raffy###
(430487, 430487)
 Our results demonstrate that thesemagnetoresistance oscillations, also observed for the Ln2-x<missing VAR>CexCuO4 (Ln  Nd,Pr,.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pr
###Anisotropy of the in-plane angular magnetoresistance of electron-doed Sr1-xLaxCuO2 thin films|V. P. Jovanović,L. Fruchter,Z. Z. Li,H. Raffy###
(430491, 430491)
 Our results demonstrate that thesemagnetoresistance oscillations, also observed for the Ln2-x<missing VAR>CexCuO4 (Ln  Nd,Pr,.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Anisotropy of the in-plane angular magnetoresistance of electron-doed Sr1-xLaxCuO2 thin films|V. P. Jovanović,L. Fruchter,Z. Z. Li,H. Raffy###
(430509, 430509)
 family and attributed to an AF signature, are, without ambiguity, aproperty of CuO2 planes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CuO2
###Anisotropy of the in-plane angular magnetoresistance of electron-doed Sr1-xLaxCuO2 thin films|V. P. Jovanović,L. Fruchter,Z. Z. Li,H. Raffy###
(430529, 430531)
 family and attributed to an AF signature, are, without ambiguity, aproperty of CuO2 planes.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ba
###Localized and itinerant dichotomy of electrons in Ba(Fe,Co)2As2|H. Q. Yuan,L. Jiao,F. F. Balakirev,J. Singleton,C. Setty,J. P. Hu,T. Shang,L. J. Li,G. H. Cao,Z. A. Xu,B. Shen,H. H. Wen###
(430665, 430665)
Localized and itinerant dichotomy of electrons in Ba(Fe,Co)2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 3, 'd', 2],[170.0, 55, 'T', 3],[398.0, 3, 'd', 7]

Fe
###Localized and itinerant dichotomy of electrons in Ba(Fe,Co)2As2|H. Q. Yuan,L. Jiao,F. F. Balakirev,J. Singleton,C. Setty,J. P. Hu,T. Shang,L. J. Li,G. H. Cao,Z. A. Xu,B. Shen,H. H. Wen###
(430667, 430667)
Localized and itinerant dichotomy of electrons in Ba(Fe,Co)2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 3, 'd', 2],[168.0, 55, 'T', 3],[396.0, 3, 'd', 7]

Co
###Localized and itinerant dichotomy of electrons in Ba(Fe,Co)2As2|H. Q. Yuan,L. Jiao,F. F. Balakirev,J. Singleton,C. Setty,J. P. Hu,T. Shang,L. J. Li,G. H. Cao,Z. A. Xu,B. Shen,H. H. Wen###
(430669, 430669)
Localized and itinerant dichotomy of electrons in Ba(Fe,Co)2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 3, 'd', 2],[166.0, 55, 'T', 3],[394.0, 3, 'd', 7]

As2
###Localized and itinerant dichotomy of electrons in Ba(Fe,Co)2As2|H. Q. Yuan,L. Jiao,F. F. Balakirev,J. Singleton,C. Setty,J. P. Hu,T. Shang,L. J. Li,G. H. Cao,Z. A. Xu,B. Shen,H. H. Wen###
(430672, 430673)
Localized and itinerant dichotomy of electrons in Ba(Fe,Co)2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 3, 'd', 2],[162.0, 55, 'T', 3],[390.0, 3, 'd', 7]

Ba
###Localized and itinerant dichotomy of electrons in Ba(Fe,Co)2As2|H. Q. Yuan,L. Jiao,F. F. Balakirev,J. Singleton,C. Setty,J. P. Hu,T. Shang,L. J. Li,G. H. Cao,Z. A. Xu,B. Shen,H. H. Wen###
(430801, 430801)
 Here we report themagnetoresistivity (rhoxx) and the Hall resistivity (rhoxy) ofBa(Fe1-xCox)2As2 (x<missing VAR>0 and 0.05) in a magnetic field of up to 55T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 3, 'd', 1],[34.0, 55, 'T', 0],[262.0, 3, 'd', 4]

Fe1-x
###Localized and itinerant dichotomy of electrons in Ba(Fe,Co)2As2|H. Q. Yuan,L. Jiao,F. F. Balakirev,J. Singleton,C. Setty,J. P. Hu,T. Shang,L. J. Li,G. H. Cao,Z. A. Xu,B. Shen,H. H. Wen###
(430803, 430806)
 Here we report themagnetoresistivity (rhoxx) and the Hall resistivity (rhoxy) ofBa(Fe1-xCox)2As2 (x<missing VAR>0 and 0.05) in a magnetic field of up to 55T.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[39.0, 3, 'd', 1],[29.0, 55, 'T', 0],[257.0, 3, 'd', 4]

As2
###Localized and itinerant dichotomy of electrons in Ba(Fe,Co)2As2|H. Q. Yuan,L. Jiao,F. F. Balakirev,J. Singleton,C. Setty,J. P. Hu,T. Shang,L. J. Li,G. H. Cao,Z. A. Xu,B. Shen,H. H. Wen###
(430810, 430811)
 Here we report themagnetoresistivity (rhoxx) and the Hall resistivity (rhoxy) ofBa(Fe1-xCox)2As2 (x<missing VAR>0 and 0.05) in a magnetic field of up to 55T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 3, 'd', 1],[24.0, 55, 'T', 0],[252.0, 3, 'd', 4]

(H)
###Localized and itinerant dichotomy of electrons in Ba(Fe,Co)2As2|H. Q. Yuan,L. Jiao,F. F. Balakirev,J. Singleton,C. Setty,J. P. Hu,T. Shang,L. J. Li,G. H. Cao,Z. A. Xu,B. Shen,H. H. Wen###
(430917, 430919)
 The magnetic state isfeatured with a huge magnetoresistance and a distinguished Hall resistivity,rhoxy(H), which shows a pronounced parabolic field dependence, while theparamagnetic state shows little magnetoresistance and follows a simple linearmagnetic field dependence on the Hall resistivity.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 3, 'd', 3],[82.0, 55, 'T', 2],[144.0, 3, 'd', 2]

Ba
###Localized and itinerant dichotomy of electrons in Ba(Fe,Co)2As2|H. Q. Yuan,L. Jiao,F. F. Balakirev,J. Singleton,C. Setty,J. P. Hu,T. Shang,L. J. Li,G. H. Cao,Z. A. Xu,B. Shen,H. H. Wen###
(431070, 431070)
 We argue that the 3d-electrons inBa(Fe1-xCox)2As2 are divided into those who are close to forming localizedmoments controlling the magnetic transition and the others giving rise tocomplex transport properties through their interaction with the former.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[306.0, 3, 'd', 5],[235.0, 55, 'T', 4],[7.0, 3, 'd', 0]

Fe1-x
###Localized and itinerant dichotomy of electrons in Ba(Fe,Co)2As2|H. Q. Yuan,L. Jiao,F. F. Balakirev,J. Singleton,C. Setty,J. P. Hu,T. Shang,L. J. Li,G. H. Cao,Z. A. Xu,B. Shen,H. H. Wen###
(431072, 431075)
 We argue that the 3d-electrons inBa(Fe1-xCox)2As2 are divided into those who are close to forming localizedmoments controlling the magnetic transition and the others giving rise tocomplex transport properties through their interaction with the former.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[308.0, 3, 'd', 5],[237.0, 55, 'T', 4],[9.0, 3, 'd', 0]

As2
###Localized and itinerant dichotomy of electrons in Ba(Fe,Co)2As2|H. Q. Yuan,L. Jiao,F. F. Balakirev,J. Singleton,C. Setty,J. P. Hu,T. Shang,L. J. Li,G. H. Cao,Z. A. Xu,B. Shen,H. H. Wen###
(431079, 431080)
 We argue that the 3d-electrons inBa(Fe1-xCox)2As2 are divided into those who are close to forming localizedmoments controlling the magnetic transition and the others giving rise tocomplex transport properties through their interaction with the former.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[315.0, 3, 'd', 5],[244.0, 55, 'T', 4],[16.0, 3, 'd', 0]

Co/Cu
###Domain - wall - induced magnetoresistance in pseudo spin-valve/superconductor hybrid structures|A. K. Suszka,F. S. Bergeret,A. Berger###
(431217, 431219)
 We have studied the interaction between magnetism and superconductivity in apseudo-spin-valve structure consisting of a Co/Cu/Py/Nb layer sequence.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Nb
###Domain - wall - induced magnetoresistance in pseudo spin-valve/superconductor hybrid structures|A. K. Suszka,F. S. Bergeret,A. Berger###
(431223, 431223)
 We have studied the interaction between magnetism and superconductivity in apseudo-spin-valve structure consisting of a Co/Cu/Py/Nb layer sequence.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nb
###Domain - wall - induced magnetoresistance in pseudo spin-valve/superconductor hybrid structures|A. K. Suszka,F. S. Bergeret,A. Berger###
(431286, 431286)
 By placingthe superconducting Nb-film on the top of the permalloy (Py) electrode insteadof putting it in between the two ferromagnets, we minimize the influence ofspin scattering or spin accumulation onto the transport properties of Nb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nb
###Domain - wall - induced magnetoresistance in pseudo spin-valve/superconductor hybrid structures|A. K. Suszka,F. S. Bergeret,A. Berger###
(431359, 431359)
 By placingthe superconducting Nb-film on the top of the permalloy (Py) electrode insteadof putting it in between the two ferromagnets, we minimize the influence ofspin scattering or spin accumulation onto the transport properties of Nb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Domain - wall - induced magnetoresistance in pseudo spin-valve/superconductor hybrid structures|A. K. Suszka,F. S. Bergeret,A. Berger###
(431488, 431488)
 Direct comparison with magnetometry datashows that the resistance peaks occur exactly at the magnetization reversalfields of the Co and Py layers, where D<missing VAR>Ws are generated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Domain - wall - induced magnetoresistance in pseudo spin-valve/superconductor hybrid structures|A. K. Suszka,F. S. Bergeret,A. Berger###
(431529, 431529)
 For temperatures nearthe superconducting transition the amplitude of the D<missing VAR>W-inducedmagnetoresistance increases with decreasing temperature, reaching values farbeyond the size of the giant magnetoresistive response of our structure in thenormal state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr2FeCoO6
###Large Magnetoresistance and Jahn Teller effect in Sr$_2$FeCoO$_6$|R. Pradheesh,Harikrishnan S. Nair,V. Sankaranarayanan,K. Sethupat###
(431606, 431611)
Large Magnetoresistance and Jahn Teller effect in Sr2FeCoO6.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0.1,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[259.0, 63, '%', 5],[263.0, 14, 'K', 5],[266.0, 12, 'T', 5]

Sr2FeCoO6
###Large Magnetoresistance and Jahn Teller effect in Sr$_2$FeCoO$_6$|R. Pradheesh,Harikrishnan S. Nair,V. Sankaranarayanan,K. Sethupat###
(431633, 431638)
 Neutron diffraction measurement on the spin glass double perovskiteSr2FeCoO6 reveals site disorder as well as Co3 intermediate spinstate.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0.1,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[232.0, 63, '%', 4],[236.0, 14, 'K', 4],[239.0, 12, 'T', 4]

Co3
###Large Magnetoresistance and Jahn Teller effect in Sr$_2$FeCoO$_6$|R. Pradheesh,Harikrishnan S. Nair,V. Sankaranarayanan,K. Sethupat###
(431652, 431653)
 Neutron diffraction measurement on the spin glass double perovskiteSr2FeCoO6 reveals site disorder as well as Co3 intermediate spinstate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[217.0, 63, '%', 4],[221.0, 14, 'K', 4],[224.0, 12, 'T', 4]

In
###Large Magnetoresistance and Jahn Teller effect in Sr$_2$FeCoO$_6$|R. Pradheesh,Harikrishnan S. Nair,V. Sankaranarayanan,K. Sethupat###
(431663, 431663)
 In addition, multiple valence states of Fe and Co are confirmed throughMossbauer and X<missing VAR>-ray photoelectron spectroscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[207.0, 63, '%', 3],[211.0, 14, 'K', 3],[214.0, 12, 'T', 3]

Fe
###Large Magnetoresistance and Jahn Teller effect in Sr$_2$FeCoO$_6$|R. Pradheesh,Harikrishnan S. Nair,V. Sankaranarayanan,K. Sethupat###
(431676, 431676)
 In addition, multiple valence states of Fe and Co are confirmed throughMossbauer and X<missing VAR>-ray photoelectron spectroscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[194.0, 63, '%', 3],[198.0, 14, 'K', 3],[201.0, 12, 'T', 3]

Co
###Large Magnetoresistance and Jahn Teller effect in Sr$_2$FeCoO$_6$|R. Pradheesh,Harikrishnan S. Nair,V. Sankaranarayanan,K. Sethupat###
(431680, 431680)
 In addition, multiple valence states of Fe and Co are confirmed throughMossbauer and X<missing VAR>-ray photoelectron spectroscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[190.0, 63, '%', 3],[194.0, 14, 'K', 3],[197.0, 12, 'T', 3]

Co3
###Large Magnetoresistance and Jahn Teller effect in Sr$_2$FeCoO$_6$|R. Pradheesh,Harikrishnan S. Nair,V. Sankaranarayanan,K. Sethupat###
(431804, 431805)
 A clear evidence of Jahn-Teller distortion at the Co3-O6 complexis observed and incorporating the physics of Jahn-Teller effect, the presenceof localized magnetic moment is shown.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 63, '%', 1],[69.0, 14, 'K', 1],[72.0, 12, 'T', 1]

O6
###Large Magnetoresistance and Jahn Teller effect in Sr$_2$FeCoO$_6$|R. Pradheesh,Harikrishnan S. Nair,V. Sankaranarayanan,K. Sethupat###
(431807, 431808)
 A clear evidence of Jahn-Teller distortion at the Co3-O6 complexis observed and incorporating the physics of Jahn-Teller effect, the presenceof localized magnetic moment is shown.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 63, '%', 1],[66.0, 14, 'K', 1],[69.0, 12, 'T', 1]

Sr2FeCoO6
###Large Magnetoresistance and Jahn Teller effect in Sr$_2$FeCoO$_6$|R. Pradheesh,Harikrishnan S. Nair,V. Sankaranarayanan,K. Sethupat###
(431890, 431895)
 A large, negative and anomalousmagnetoresistance of approx 63% at 14K in 12T applied field is observed forSr2FeCoO6.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0.1,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 63, '%', 0],[16.0, 14, 'K', 0],[13.0, 12, 'T', 0]

GeSbTe
###Weak antilocalization and disorder-enhanced electron interactions in crystalline GeSbTe|Nicholas P. Breznay,Hanno Volker,Alexander Palevski,Riccardo Mazzarello,Aharon Kapitulnik,Matthias Wuttig###
(432012, 432014)
Weak antilocalization and disorder-enhanced electron interactions in crystalline GeSbTe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[415.0, 1, 'K', 7]

In
###Weak antilocalization and disorder-enhanced electron interactions in crystalline GeSbTe|Nicholas P. Breznay,Hanno Volker,Alexander Palevski,Riccardo Mazzarello,Aharon Kapitulnik,Matthias Wuttig###
(432177, 432177)
 In this work westudy electrical transport in thin metallic films of the disordered,crystalline phase change material Ge1Sb2Te4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[252.0, 1, 'K', 3]

Ge1Sb2Te4
###Weak antilocalization and disorder-enhanced electron interactions in crystalline GeSbTe|Nicholas P. Breznay,Hanno Volker,Alexander Palevski,Riccardo Mazzarello,Aharon Kapitulnik,Matthias Wuttig###
(432216, 432221)
 In this work westudy electrical transport in thin metallic films of the disordered,crystalline phase change material Ge1Sb2Te4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[208.0, 1, 'K', 3]

Co/YMnO3
###Revealing the origin of the vertical hysteresis loop shifts in an exchange biased Co/YMnO$_3$ bilayer|J. Barzola-Quiquia,A. Lessig,A. Ballestar,C. Zandalazini,G. Bridoux,F. Bern,P. Esquinazi###
(432466, 432471)
Revealing the origin of the vertical hysteresis loop shifts in an exchange biased Co/YMnO3 bilayer.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

YMnO3
###Revealing the origin of the vertical hysteresis loop shifts in an exchange biased Co/YMnO$_3$ bilayer|J. Barzola-Quiquia,A. Lessig,A. Ballestar,C. Zandalazini,G. Bridoux,F. Bern,P. Esquinazi###
(432503, 432506)
 We have investigated exchange bias effects in bilayers composed by theantiferromagnetic o<missing VAR>-YMnO3 and ferromagnetic Co thin film by means of SQ<missing VAR>UID<missing VAR>magnetometry, magnetoresistance, anisotropic magnetoresistance and planar Halleffect.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Revealing the origin of the vertical hysteresis loop shifts in an exchange biased Co/YMnO$_3$ bilayer|J. Barzola-Quiquia,A. Lessig,A. Ballestar,C. Zandalazini,G. Bridoux,F. Bern,P. Esquinazi###
(432512, 432512)
 We have investigated exchange bias effects in bilayers composed by theantiferromagnetic o<missing VAR>-YMnO3 and ferromagnetic Co thin film by means of SQ<missing VAR>UID<missing VAR>magnetometry, magnetoresistance, anisotropic magnetoresistance and planar Halleffect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Revealing the origin of the vertical hysteresis loop shifts in an exchange biased Co/YMnO$_3$ bilayer|J. Barzola-Quiquia,A. Lessig,A. Ballestar,C. Zandalazini,G. Bridoux,F. Bern,P. Esquinazi###
(432524, 432524)
 We have investigated exchange bias effects in bilayers composed by theantiferromagnetic o<missing VAR>-YMnO3 and ferromagnetic Co thin film by means of SQ<missing VAR>UID<missing VAR>magnetometry, magnetoresistance, anisotropic magnetoresistance and planar Halleffect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

UI
###Revealing the origin of the vertical hysteresis loop shifts in an exchange biased Co/YMnO$_3$ bilayer|J. Barzola-Quiquia,A. Lessig,A. Ballestar,C. Zandalazini,G. Bridoux,F. Bern,P. Esquinazi###
(432526, 432527)
 We have investigated exchange bias effects in bilayers composed by theantiferromagnetic o<missing VAR>-YMnO3 and ferromagnetic Co thin film by means of SQ<missing VAR>UID<missing VAR>magnetometry, magnetoresistance, anisotropic magnetoresistance and planar Halleffect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Revealing the origin of the vertical hysteresis loop shifts in an exchange biased Co/YMnO$_3$ bilayer|J. Barzola-Quiquia,A. Lessig,A. Ballestar,C. Zandalazini,G. Bridoux,F. Bern,P. Esquinazi###
(432609, 432609)
Both exchange bias parameters, the exchange bias field HE(T) as well asthe magnetization shift ME(T), vanish around the Neel temperature T<missing VAR>Nsimeq 45 K.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Revealing the origin of the vertical hysteresis loop shifts in an exchange biased Co/YMnO$_3$ bilayer|J. Barzola-Quiquia,A. Lessig,A. Ballestar,C. Zandalazini,G. Bridoux,F. Bern,P. Esquinazi###
(432641, 432641)
Both exchange bias parameters, the exchange bias field HE(T) as well asthe magnetization shift ME(T), vanish around the Neel temperature T<missing VAR>Nsimeq 45 K.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Revealing the origin of the vertical hysteresis loop shifts in an exchange biased Co/YMnO$_3$ bilayer|J. Barzola-Quiquia,A. Lessig,A. Ballestar,C. Zandalazini,G. Bridoux,F. Bern,P. Esquinazi###
(432647, 432647)
Both exchange bias parameters, the exchange bias field HE(T) as well asthe magnetization shift ME(T), vanish around the Neel temperature T<missing VAR>Nsimeq 45 K.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Revealing the origin of the vertical hysteresis loop shifts in an exchange biased Co/YMnO$_3$ bilayer|J. Barzola-Quiquia,A. Lessig,A. Ballestar,C. Zandalazini,G. Bridoux,F. Bern,P. Esquinazi###
(432654, 432654)
Both exchange bias parameters, the exchange bias field HE(T) as well asthe magnetization shift ME(T), vanish around the Neel temperature T<missing VAR>Nsimeq 45 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YMnO3
###Revealing the origin of the vertical hysteresis loop shifts in an exchange biased Co/YMnO$_3$ bilayer|J. Barzola-Quiquia,A. Lessig,A. Ballestar,C. Zandalazini,G. Bridoux,F. Bern,P. Esquinazi###
(432739, 432742)
 Because the o<missing VAR>-YMnO3 film is highly insulating, our resultsdemonstrate that the ME(T) shift originates at the interface within theferromagnetic Co layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Revealing the origin of the vertical hysteresis loop shifts in an exchange biased Co/YMnO$_3$ bilayer|J. Barzola-Quiquia,A. Lessig,A. Ballestar,C. Zandalazini,G. Bridoux,F. Bern,P. Esquinazi###
(432787, 432787)
 Because the o<missing VAR>-YMnO3 film is highly insulating, our resultsdemonstrate that the ME(T) shift originates at the interface within theferromagnetic Co layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Y
###Revealing the origin of the vertical hysteresis loop shifts in an exchange biased Co/YMnO$_3$ bilayer|J. Barzola-Quiquia,A. Lessig,A. Ballestar,C. Zandalazini,G. Bridoux,F. Bern,P. Esquinazi###
(432831, 432831)
 To show that the main results obtained are general andnot because of some special characteristics of the o<missing VAR>-YM<missing VAR>O3 layer, similarmeasurements were done in Co/CoO micro-wires.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O3
###Revealing the origin of the vertical hysteresis loop shifts in an exchange biased Co/YMnO$_3$ bilayer|J. Barzola-Quiquia,A. Lessig,A. Ballestar,C. Zandalazini,G. Bridoux,F. Bern,P. Esquinazi###
(432833, 432834)
 To show that the main results obtained are general andnot because of some special characteristics of the o<missing VAR>-YM<missing VAR>O3 layer, similarmeasurements were done in Co/CoO micro-wires.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co/CoO
###Revealing the origin of the vertical hysteresis loop shifts in an exchange biased Co/YMnO$_3$ bilayer|J. Barzola-Quiquia,A. Lessig,A. Ballestar,C. Zandalazini,G. Bridoux,F. Bern,P. Esquinazi###
(432850, 432853)
 To show that the main results obtained are general andnot because of some special characteristics of the o<missing VAR>-YM<missing VAR>O3 layer, similarmeasurements were done in Co/CoO micro-wires.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Co
###Revealing the origin of the vertical hysteresis loop shifts in an exchange biased Co/YMnO$_3$ bilayer|J. Barzola-Quiquia,A. Lessig,A. Ballestar,C. Zandalazini,G. Bridoux,F. Bern,P. Esquinazi###
(432910, 432910)
 The transport and magnetizationcharacterization of the micro-wires supports the main conclusion that theseeffects are related to the response of the ferromagnetic Co layer at theinterface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaFeAsO
###Magneto-Transport Properties of Single Crystalline LaFeAsO|C. A. McElroy,J. J. Hamlin,B. D. White,M. A. McGuire,B. C. Sales,M. B. Maple###
(432942, 432945)
Magneto-Transport Properties of Single Crystalline LaFeAsO.
Featurization terminated normally.
0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[174.0, 9, 'T', 3],[292.0, 140, 'K', 5],[306.0, 156, 'K', 5],[377.0, 2.2, 'K', 6],[380.0, 180, 'K', 6]

LaFeAsO
###Magneto-Transport Properties of Single Crystalline LaFeAsO|C. A. McElroy,J. J. Hamlin,B. D. White,M. A. McGuire,B. C. Sales,M. B. Maple###
(432985, 432988)
 Measurements of magnetization, specific heat, electrical resistivity, Halleffect, and magnetoresistance on single crystalline samples of LaFeAsO grown ina NaAs flux are reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 9, 'T', 2],[249.0, 140, 'K', 4],[263.0, 156, 'K', 4],[334.0, 2.2, 'K', 5],[337.0, 180, 'K', 5]

NaAs
###Magneto-Transport Properties of Single Crystalline LaFeAsO|C. A. McElroy,J. J. Hamlin,B. D. White,M. A. McGuire,B. C. Sales,M. B. Maple###
(432997, 432998)
 Measurements of magnetization, specific heat, electrical resistivity, Halleffect, and magnetoresistance on single crystalline samples of LaFeAsO grown ina NaAs flux are reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 9, 'T', 2],[239.0, 140, 'K', 4],[253.0, 156, 'K', 4],[324.0, 2.2, 'K', 5],[327.0, 180, 'K', 5]

S
###Magneto-Transport Properties of Single Crystalline LaFeAsO|C. A. McElroy,J. J. Hamlin,B. D. White,M. A. McGuire,B. C. Sales,M. B. Maple###
(433086, 433086)
 While this material is known to be a semimetal, thetemperature dependence of the electrical resistivity data presented herein isreminiscent of semiconducting behavior and exhibits distinct featuresassociated with a structural transition and spin density wave (SD<missing VAR>W) order.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 9, 'T', 1],[151.0, 140, 'K', 3],[165.0, 156, 'K', 3],[236.0, 2.2, 'K', 4],[239.0, 180, 'K', 4]

W
###Magneto-Transport Properties of Single Crystalline LaFeAsO|C. A. McElroy,J. J. Hamlin,B. D. White,M. A. McGuire,B. C. Sales,M. B. Maple###
(433088, 433088)
 While this material is known to be a semimetal, thetemperature dependence of the electrical resistivity data presented herein isreminiscent of semiconducting behavior and exhibits distinct featuresassociated with a structural transition and spin density wave (SD<missing VAR>W) order.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 9, 'T', 1],[149.0, 140, 'K', 3],[163.0, 156, 'K', 3],[234.0, 2.2, 'K', 4],[237.0, 180, 'K', 4]

S
###Magneto-Transport Properties of Single Crystalline LaFeAsO|C. A. McElroy,J. J. Hamlin,B. D. White,M. A. McGuire,B. C. Sales,M. B. Maple###
(433195, 433195)
 The charge carrier density and mobility indicate that electronsare the majority charge carriers and exhibit features indicative of thestructural transition and SD<missing VAR>W formation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 9, 'T', 1],[42.0, 140, 'K', 1],[56.0, 156, 'K', 1],[127.0, 2.2, 'K', 2],[130.0, 180, 'K', 2]

W
###Magneto-Transport Properties of Single Crystalline LaFeAsO|C. A. McElroy,J. J. Hamlin,B. D. White,M. A. McGuire,B. C. Sales,M. B. Maple###
(433197, 433197)
 The charge carrier density and mobility indicate that electronsare the majority charge carriers and exhibit features indicative of thestructural transition and SD<missing VAR>W formation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 9, 'T', 1],[40.0, 140, 'K', 1],[54.0, 156, 'K', 1],[125.0, 2.2, 'K', 2],[128.0, 180, 'K', 2]

III
###Recent Progress in III-V based ferromagnetic semiconductors: Band structure, Fermi level, and tunneling transport|Masaaki Tanaka,Shinobu Ohya,Pham Nam Hai###
(433342, 433344)
Recent Progress in III-V based ferromagnetic semiconductors Band structure, Fermi level, and tunneling transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Recent Progress in III-V based ferromagnetic semiconductors: Band structure, Fermi level, and tunneling transport|Masaaki Tanaka,Shinobu Ohya,Pham Nam Hai###
(433346, 433346)
Recent Progress in III-V based ferromagnetic semiconductors Band structure, Fermi level, and tunneling transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Recent Progress in III-V based ferromagnetic semiconductors: Band structure, Fermi level, and tunneling transport|Masaaki Tanaka,Shinobu Ohya,Pham Nam Hai###
(433607, 433607)
 Ferromagnetic semiconductors (FM<missing VAR>S), which arealloy semiconductors containing magnetic atoms such as Mn and Fe, are one ofthe most promising classes of materials for this purpose, and thus have beenintensively studied for the past two decades.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Recent Progress in III-V based ferromagnetic semiconductors: Band structure, Fermi level, and tunneling transport|Masaaki Tanaka,Shinobu Ohya,Pham Nam Hai###
(433609, 433609)
 Ferromagnetic semiconductors (FM<missing VAR>S), which arealloy semiconductors containing magnetic atoms such as Mn and Fe, are one ofthe most promising classes of materials for this purpose, and thus have beenintensively studied for the past two decades.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Recent Progress in III-V based ferromagnetic semiconductors: Band structure, Fermi level, and tunneling transport|Masaaki Tanaka,Shinobu Ohya,Pham Nam Hai###
(433632, 433632)
 Ferromagnetic semiconductors (FM<missing VAR>S), which arealloy semiconductors containing magnetic atoms such as Mn and Fe, are one ofthe most promising classes of materials for this purpose, and thus have beenintensively studied for the past two decades.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Recent Progress in III-V based ferromagnetic semiconductors: Band structure, Fermi level, and tunneling transport|Masaaki Tanaka,Shinobu Ohya,Pham Nam Hai###
(433636, 433636)
 Ferromagnetic semiconductors (FM<missing VAR>S), which arealloy semiconductors containing magnetic atoms such as Mn and Fe, are one ofthe most promising classes of materials for this purpose, and thus have beenintensively studied for the past two decades.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

III
###Recent Progress in III-V based ferromagnetic semiconductors: Band structure, Fermi level, and tunneling transport|Masaaki Tanaka,Shinobu Ohya,Pham Nam Hai###
(433717, 433719)
 Here, we review the recentprogress in the studies of the most prototypical III-V based FM<missing VAR>S, p<missing VAR>-type(GaMn)As, and its heterostructures with focus on tunneling transport, Fermilevel, and bandstructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Recent Progress in III-V based ferromagnetic semiconductors: Band structure, Fermi level, and tunneling transport|Masaaki Tanaka,Shinobu Ohya,Pham Nam Hai###
(433721, 433721)
 Here, we review the recentprogress in the studies of the most prototypical III-V based FM<missing VAR>S, p<missing VAR>-type(GaMn)As, and its heterostructures with focus on tunneling transport, Fermilevel, and bandstructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Recent Progress in III-V based ferromagnetic semiconductors: Band structure, Fermi level, and tunneling transport|Masaaki Tanaka,Shinobu Ohya,Pham Nam Hai###
(433725, 433725)
 Here, we review the recentprogress in the studies of the most prototypical III-V based FM<missing VAR>S, p<missing VAR>-type(GaMn)As, and its heterostructures with focus on tunneling transport, Fermilevel, and bandstructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Recent Progress in III-V based ferromagnetic semiconductors: Band structure, Fermi level, and tunneling transport|Masaaki Tanaka,Shinobu Ohya,Pham Nam Hai###
(433727, 433727)
 Here, we review the recentprogress in the studies of the most prototypical III-V based FM<missing VAR>S, p<missing VAR>-type(GaMn)As, and its heterostructures with focus on tunneling transport, Fermilevel, and bandstructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(GaMn)As
###Recent Progress in III-V based ferromagnetic semiconductors: Band structure, Fermi level, and tunneling transport|Masaaki Tanaka,Shinobu Ohya,Pham Nam Hai###
(433735, 433739)
 Here, we review the recentprogress in the studies of the most prototypical III-V based FM<missing VAR>S, p<missing VAR>-type(GaMn)As, and its heterostructures with focus on tunneling transport, Fermilevel, and bandstructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Recent Progress in III-V based ferromagnetic semiconductors: Band structure, Fermi level, and tunneling transport|Masaaki Tanaka,Shinobu Ohya,Pham Nam Hai###
(433792, 433792)
 Furthermore, we cover the properties of a new n<missing VAR>-typeFM<missing VAR>S, (InFe)As, which shows electron-induced ferromagnetism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Recent Progress in III-V based ferromagnetic semiconductors: Band structure, Fermi level, and tunneling transport|Masaaki Tanaka,Shinobu Ohya,Pham Nam Hai###
(433794, 433794)
 Furthermore, we cover the properties of a new n<missing VAR>-typeFM<missing VAR>S, (InFe)As, which shows electron-induced ferromagnetism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(InFe)As
###Recent Progress in III-V based ferromagnetic semiconductors: Band structure, Fermi level, and tunneling transport|Masaaki Tanaka,Shinobu Ohya,Pham Nam Hai###
(433797, 433801)
 Furthermore, we cover the properties of a new n<missing VAR>-typeFM<missing VAR>S, (InFe)As, which shows electron-induced ferromagnetism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Recent Progress in III-V based ferromagnetic semiconductors: Band structure, Fermi level, and tunneling transport|Masaaki Tanaka,Shinobu Ohya,Pham Nam Hai###
(433817, 433817)
 These FM<missing VAR>S materialshaving zinc-blende crystal structure show excellent compatibility withwell-developed III-V heterostructures and devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Recent Progress in III-V based ferromagnetic semiconductors: Band structure, Fermi level, and tunneling transport|Masaaki Tanaka,Shinobu Ohya,Pham Nam Hai###
(433819, 433819)
 These FM<missing VAR>S materialshaving zinc-blende crystal structure show excellent compatibility withwell-developed III-V heterostructures and devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

III
###Recent Progress in III-V based ferromagnetic semiconductors: Band structure, Fermi level, and tunneling transport|Masaaki Tanaka,Shinobu Ohya,Pham Nam Hai###
(433847, 433849)
 These FM<missing VAR>S materialshaving zinc-blende crystal structure show excellent compatibility withwell-developed III-V heterostructures and devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Recent Progress in III-V based ferromagnetic semiconductors: Band structure, Fermi level, and tunneling transport|Masaaki Tanaka,Shinobu Ohya,Pham Nam Hai###
(433851, 433851)
 These FM<missing VAR>S materialshaving zinc-blende crystal structure show excellent compatibility withwell-developed III-V heterostructures and devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HgTe
###Interference-induced magnetoresistance in HgTe quantum wells|I. V. Gornyi,V. Yu. Kachorovskii,P. M. Ostrovsky###
(433876, 433877)
Interference-induced magnetoresistance in HgTe quantum wells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HgTe
###Interference-induced magnetoresistance in HgTe quantum wells|I. V. Gornyi,V. Yu. Kachorovskii,P. M. Ostrovsky###
(433904, 433905)
 We study the quantum interference correction to the conductivity in HgTequantum wells using the Bernevig-Hughes-Zhang model.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Interference-induced magnetoresistance in HgTe quantum wells|I. V. Gornyi,V. Yu. Kachorovskii,P. M. Ostrovsky###
(434137, 434137)
 Remarkably, each Dirac cone takenseparately gives a linear contribution to the low-field magnetoresistance,which turns out to be asymmetric in magnetic field B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Interference-induced magnetoresistance in HgTe quantum wells|I. V. Gornyi,V. Yu. Kachorovskii,P. M. Ostrovsky###
(434200, 434200)
  The contributions of the two blocks are related to each other by replacingB to -B, so that the total magnetoresistance is symmetric and parabolic inthe limit Bto 0.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Interference-induced magnetoresistance in HgTe quantum wells|I. V. Gornyi,V. Yu. Kachorovskii,P. M. Ostrovsky###
(434205, 434205)
  The contributions of the two blocks are related to each other by replacingB to -B, so that the total magnetoresistance is symmetric and parabolic inthe limit Bto 0.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Interference-induced magnetoresistance in HgTe quantum wells|I. V. Gornyi,V. Yu. Kachorovskii,P. M. Ostrovsky###
(434233, 434233)
  The contributions of the two blocks are related to each other by replacingB to -B, so that the total magnetoresistance is symmetric and parabolic inthe limit Bto 0.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Negative magnetoresistivity in chiral fluids and holography|Karl Landsteiner,Yan Liu,Ya-Wen Sun###
(434346, 434346)
 In four dimensions Weyl fermions possess a chiral anomaly which leads toseveral special features in the transport phenomena, such as the negativelongitudinal magnetoresistivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Negative magnetoresistivity in chiral fluids and holography|Karl Landsteiner,Yan Liu,Ya-Wen Sun###
(434400, 434400)
 In this paper, we study its inverse, thelongitudinal magnetoconductivity, in the case of a chiral anomalous system witha background magnetic field B using the linear response method in thehydrodynamic limit and from holography.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Negative magnetoresistivity in chiral fluids and holography|Karl Landsteiner,Yan Liu,Ya-Wen Sun###
(434451, 434451)
 In this paper, we study its inverse, thelongitudinal magnetoconductivity, in the case of a chiral anomalous system witha background magnetic field B using the linear response method in thehydrodynamic limit and from holography.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Negative magnetoresistivity in chiral fluids and holography|Karl Landsteiner,Yan Liu,Ya-Wen Sun###
(434523, 434523)
 Our hydrodynamic results show that ingeneral we need to have energy, momentum and charge dissipations to get afinite D<missing VAR>C longitudinal magnetoconductivity due to the existence of the chiralanomaly.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Negative magnetoresistivity in chiral fluids and holography|Karl Landsteiner,Yan Liu,Ya-Wen Sun###
(434638, 434638)
 The holographicresult shows that in an intermediate regime of B there is naturally a negativemagnetoresistivity which decreases as 1/B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Negative magnetoresistivity in chiral fluids and holography|Karl Landsteiner,Yan Liu,Ya-Wen Sun###
(434661, 434661)
 The holographicresult shows that in an intermediate regime of B there is naturally a negativemagnetoresistivity which decreases as 1/B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Negative magnetoresistivity in chiral fluids and holography|Karl Landsteiner,Yan Liu,Ya-Wen Sun###
(434664, 434664)
 At small B direct calculations inthe holographic system suggest that holography provides a new explanation forthe small B positive magnetoresistivity behavior seen in experiment, i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Negative magnetoresistivity in chiral fluids and holography|Karl Landsteiner,Yan Liu,Ya-Wen Sun###
(434668, 434668)
 At small B direct calculations inthe holographic system suggest that holography provides a new explanation forthe small B positive magnetoresistivity behavior seen in experiment, i.e.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Negative magnetoresistivity in chiral fluids and holography|Karl Landsteiner,Yan Liu,Ya-Wen Sun###
(434704, 434704)
 At small B direct calculations inthe holographic system suggest that holography provides a new explanation forthe small B positive magnetoresistivity behavior seen in experiment, i.e.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Negative magnetoresistivity in chiral fluids and holography|Karl Landsteiner,Yan Liu,Ya-Wen Sun###
(434729, 434729)
 thesmall B behavior comes from the quantum critical conductivity being affected bythe chiral anomaly.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin transfer torques generated by the anomalous Hall effect and anisotropic magnetoresistance|Tomohiro Taniguchi,J. Grollier,M. D. Stiles###
(434868, 434868)
 In thispaper we show how these effects can be used to reliably switch perpendicularlymagnetized layers and to move domain walls.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin transfer torques generated by the anomalous Hall effect and anisotropic magnetoresistance|Tomohiro Taniguchi,J. Grollier,M. D. Stiles###
(434970, 434970)
 Insystems with two ferromagnetic layers separated by a spacer layer, an in-planeelectric field cause spin currents to be injected from one layer into theother, creating spin transfer torques.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFe/Cu/FePt
###Spin transfer torques generated by the anomalous Hall effect and anisotropic magnetoresistance|Tomohiro Taniguchi,J. Grollier,M. D. Stiles###
(435255, 435261)
 Our calculated critical current densities for a representativeCoFe/Cu/FePt structure show that the switching can be efficient for appropriatematerial choices.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

NiFe/Cu/NiFe
###Spin transfer torques generated by the anomalous Hall effect and anisotropic magnetoresistance|Tomohiro Taniguchi,J. Grollier,M. D. Stiles###
(435320, 435326)
 Similarly, control of the magnetization direction can drivedomain wall motion, as shown for NiFe/Cu/NiFe structures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

SmB6
###Robust Surface States indicated by Magnetotransport in SmB6 Thin Films|Jie Yong,Yeping Jiang,Xiaohang Zhang,Jongmoon Shin,Ichiro Takeuchi,Richard L. Greene###
(435353, 435355)
Robust Surface States indicated by Magnetotransport in SmB6 Thin Films.
Featurization terminated normally.
0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 2, 'K', 3],[288.0, 50, 'K', 6],[304.0, 10, 'K', 7],[335.0, 50, 'K', 8],[371.0, 50, 'K', 9]

SmB6
###Robust Surface States indicated by Magnetotransport in SmB6 Thin Films|Jie Yong,Yeping Jiang,Xiaohang Zhang,Jongmoon Shin,Ichiro Takeuchi,Richard L. Greene###
(435362, 435364)
 SmB6 has been predicted and verified as a prototype of topological Kondoinsulators (T<missing VAR>KIs).
Featurization terminated normally.
0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 2, 'K', 2],[279.0, 50, 'K', 5],[295.0, 10, 'K', 6],[326.0, 50, 'K', 7],[362.0, 50, 'K', 8]

K
###Robust Surface States indicated by Magnetotransport in SmB6 Thin Films|Jie Yong,Yeping Jiang,Xiaohang Zhang,Jongmoon Shin,Ichiro Takeuchi,Richard L. Greene###
(435393, 435393)
 SmB6 has been predicted and verified as a prototype of topological Kondoinsulators (T<missing VAR>KIs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 2, 'K', 2],[250.0, 50, 'K', 5],[266.0, 10, 'K', 6],[297.0, 50, 'K', 7],[333.0, 50, 'K', 8]

SmB6
###Robust Surface States indicated by Magnetotransport in SmB6 Thin Films|Jie Yong,Yeping Jiang,Xiaohang Zhang,Jongmoon Shin,Ichiro Takeuchi,Richard L. Greene###
(435425, 435427)
 Here we report longitudinal magnetoresistance and Hallcoefficient measurements on co-sputtered nanocrystalline SmB6 films and try tofind possible signatures of their topological properties.
Featurization terminated normally.
0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 2, 'K', 1],[216.0, 50, 'K', 4],[232.0, 10, 'K', 5],[263.0, 50, 'K', 6],[299.0, 50, 'K', 7]

I
###Robust Surface States indicated by Magnetotransport in SmB6 Thin Films|Jie Yong,Yeping Jiang,Xiaohang Zhang,Jongmoon Shin,Ichiro Takeuchi,Richard L. Greene###
(435572, 435572)
 While the negative part is known from the reductionof the hybridization gap due to Zeeman splitting, the positive dependence issimilar to what has been observed in other topological insulators (T<missing VAR>I).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 2, 'K', 1],[71.0, 50, 'K', 2],[87.0, 10, 'K', 3],[118.0, 50, 'K', 4],[154.0, 50, 'K', 5]

I
###Robust Surface States indicated by Magnetotransport in SmB6 Thin Films|Jie Yong,Yeping Jiang,Xiaohang Zhang,Jongmoon Shin,Ichiro Takeuchi,Richard L. Greene###
(435601, 435601)
 Weconclude that the LPMR is a characteristic feature of T<missing VAR>I and is related to thelinear dispersion near the Dirac cone.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 2, 'K', 2],[42.0, 50, 'K', 1],[58.0, 10, 'K', 2],[89.0, 50, 'K', 3],[125.0, 50, 'K', 4]

K
###Robust Surface States indicated by Magnetotransport in SmB6 Thin Films|Jie Yong,Yeping Jiang,Xiaohang Zhang,Jongmoon Shin,Ichiro Takeuchi,Richard L. Greene###
(435670, 435670)
 It peaks and becomes nonlinear at around 10 K then decreases below10 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[206.0, 2, 'K', 4],[27.0, 50, 'K', 1],[11.0, 10, 'K', 0],[20.0, 50, 'K', 1],[56.0, 50, 'K', 2]

U
###Magnetoresistance in organic spintronic devices: the role of nonlinear effects|A. V. Shumilin,V. V. Kabanov,V. A. Dediu###
(436092, 436092)
 It is promoted by the strong non-linearity inthe charge transport which strength is characterized by the dimensionlessparameter e<missing VAR>U/kBT.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Role of spin-orbit coupling and evolution of the electronic structure of WTe$_2$ under an external magnetic field|D. Rhodes,S. Das,Q. R. Zhang,B. Zeng,N. R. Pradhan,N. Kikugawa,E. Manousakis,L. Balicas###
(436241, 436243)
Role of spin-orbit coupling and evolution of the electronic structure of WTe2 under an external magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Role of spin-orbit coupling and evolution of the electronic structure of WTe$_2$ under an external magnetic field|D. Rhodes,S. Das,Q. R. Zhang,B. Zeng,N. R. Pradhan,N. Kikugawa,E. Manousakis,L. Balicas###
(436294, 436294)
 Here, we present a detailed study on the temperature and angular dependenceof the Shubnikov-de-Haas (SdH) effect in the semi-metal WTe2.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Role of spin-orbit coupling and evolution of the electronic structure of WTe$_2$ under an external magnetic field|D. Rhodes,S. Das,Q. R. Zhang,B. Zeng,N. R. Pradhan,N. Kikugawa,E. Manousakis,L. Balicas###
(436307, 436309)
 Here, we present a detailed study on the temperature and angular dependenceof the Shubnikov-de-Haas (SdH) effect in the semi-metal WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Role of spin-orbit coupling and evolution of the electronic structure of WTe$_2$ under an external magnetic field|D. Rhodes,S. Das,Q. R. Zhang,B. Zeng,N. R. Pradhan,N. Kikugawa,E. Manousakis,L. Balicas###
(436375, 436375)
 We observe four fundamental SdH frequencies and attribute them tospin-orbit split, electron- and hole-like, Fermi surface (FS) cross-sectionalareas.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(FS)
###Role of spin-orbit coupling and evolution of the electronic structure of WTe$_2$ under an external magnetic field|D. Rhodes,S. Das,Q. R. Zhang,B. Zeng,N. R. Pradhan,N. Kikugawa,E. Manousakis,L. Balicas###
(436409, 436412)
 We observe four fundamental SdH frequencies and attribute them tospin-orbit split, electron- and hole-like, Fermi surface (FS) cross-sectionalareas.
Featurization successful!
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Role of spin-orbit coupling and evolution of the electronic structure of WTe$_2$ under an external magnetic field|D. Rhodes,S. Das,Q. R. Zhang,B. Zeng,N. R. Pradhan,N. Kikugawa,E. Manousakis,L. Balicas###
(436436, 436436)
 Their angular dependence seems consistent with ellipsoidal FSs withvolumes suggesting a modest excess in the density of electrons with respect tothat of the holes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Role of spin-orbit coupling and evolution of the electronic structure of WTe$_2$ under an external magnetic field|D. Rhodes,S. Das,Q. R. Zhang,B. Zeng,N. R. Pradhan,N. Kikugawa,E. Manousakis,L. Balicas###
(436509, 436509)
 We show that density functional theory (DFT) calculationsfail to correctly describe the FSs of WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Role of spin-orbit coupling and evolution of the electronic structure of WTe$_2$ under an external magnetic field|D. Rhodes,S. Das,Q. R. Zhang,B. Zeng,N. R. Pradhan,N. Kikugawa,E. Manousakis,L. Balicas###
(436514, 436516)
 We show that density functional theory (DFT) calculationsfail to correctly describe the FSs of WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Role of spin-orbit coupling and evolution of the electronic structure of WTe$_2$ under an external magnetic field|D. Rhodes,S. Das,Q. R. Zhang,B. Zeng,N. R. Pradhan,N. Kikugawa,E. Manousakis,L. Balicas###
(436560, 436560)
 When their cross-sectional areasare adjusted to reflect the experimental data, the resulting volumes of theelectron/hole FSs obtained from the DFT calculations would imply a pronouncedimbalance between the densities of electrons and holes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Role of spin-orbit coupling and evolution of the electronic structure of WTe$_2$ under an external magnetic field|D. Rhodes,S. Das,Q. R. Zhang,B. Zeng,N. R. Pradhan,N. Kikugawa,E. Manousakis,L. Balicas###
(436705, 436707)
 Taken together, our observationssuggest that the electronic structure of WTe2 evolves with the magneticfield.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Temperature dependent three-dimensional anisotropy of the magnetoresistance in WTe$_2$|L. R. Thoutam,Y. L. Wang,Z. L. Xiao,S. Das,A. Luican-Mayer,R. Divan,G. W. Crabtree,W. K. Kwok###
(436771, 436773)
Temperature dependent three-dimensional anisotropy of the magnetoresistance in WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 3, 'D', 3],[160.0, 2, ',', 3],[171.0, 3, 'D', 3],[221.0, 2, ',', 3]

WTe2
###Temperature dependent three-dimensional anisotropy of the magnetoresistance in WTe$_2$|L. R. Thoutam,Y. L. Wang,Z. L. Xiao,S. Das,A. Luican-Mayer,R. Divan,G. W. Crabtree,W. K. Kwok###
(436796, 436798)
 Extremely large magnetoresistance (XMR) was recently discovered in WTe2,triggering extensive research on this material regarding the XMR origin.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 3, 'D', 2],[135.0, 2, ',', 2],[146.0, 3, 'D', 2],[196.0, 2, ',', 2]

WTe2
###Temperature dependent three-dimensional anisotropy of the magnetoresistance in WTe$_2$|L. R. Thoutam,Y. L. Wang,Z. L. Xiao,S. Das,A. Luican-Mayer,R. Divan,G. W. Crabtree,W. K. Kwok###
(436828, 436830)
 SinceWTe2 is a layered compound with metal layers sandwiched between adjacentinsulating chalcogenide layers, this material has been considered to beelectronically two-dimensional (2D).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 3, 'D', 1],[103.0, 2, ',', 1],[114.0, 3, 'D', 1],[164.0, 2, ',', 1]

WTe2
###Temperature dependent three-dimensional anisotropy of the magnetoresistance in WTe$_2$|L. R. Thoutam,Y. L. Wang,Z. L. Xiao,S. Das,A. Luican-Mayer,R. Divan,G. W. Crabtree,W. K. Kwok###
(436902, 436904)
 Here we report two new findings onWTe2 (1) WTe2 is electronically 3D with a mass anisotropy as low as 2,as revealed by the 3D scaling behavior of the resistanceR<missing VAR>(H,theta)R<missing VAR>(varepsilontheta H) with varepsilontheta (cos2 theta gamma-2sin2 theta)1/2, theta being the magnetic field anglewith respect to c<missing VAR>-axis of the crystal and gamma being the mass anisotropy;(2) the mass anisotropy gamma varies with temperature and follows themagnetoresistance behavior of the Fermi liquid state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 3, 'D', 0],[29.0, 2, ',', 0],[40.0, 3, 'D', 0],[90.0, 2, ',', 0]

WTe2
###Temperature dependent three-dimensional anisotropy of the magnetoresistance in WTe$_2$|L. R. Thoutam,Y. L. Wang,Z. L. Xiao,S. Das,A. Luican-Mayer,R. Divan,G. W. Crabtree,W. K. Kwok###
(436910, 436912)
 Here we report two new findings onWTe2 (1) WTe2 is electronically 3D with a mass anisotropy as low as 2,as revealed by the 3D scaling behavior of the resistanceR<missing VAR>(H,theta)R<missing VAR>(varepsilontheta H) with varepsilontheta (cos2 theta gamma-2sin2 theta)1/2, theta being the magnetic field anglewith respect to c<missing VAR>-axis of the crystal and gamma being the mass anisotropy;(2) the mass anisotropy gamma varies with temperature and follows themagnetoresistance behavior of the Fermi liquid state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 3, 'D', 0],[21.0, 2, ',', 0],[32.0, 3, 'D', 0],[82.0, 2, ',', 0]

H
###Temperature dependent three-dimensional anisotropy of the magnetoresistance in WTe$_2$|L. R. Thoutam,Y. L. Wang,Z. L. Xiao,S. Das,A. Luican-Mayer,R. Divan,G. W. Crabtree,W. K. Kwok###
(436959, 436959)
 Here we report two new findings onWTe2 (1) WTe2 is electronically 3D with a mass anisotropy as low as 2,as revealed by the 3D scaling behavior of the resistanceR<missing VAR>(H,theta)R<missing VAR>(varepsilontheta H) with varepsilontheta (cos2 theta gamma-2sin2 theta)1/2, theta being the magnetic field anglewith respect to c<missing VAR>-axis of the crystal and gamma being the mass anisotropy;(2) the mass anisotropy gamma varies with temperature and follows themagnetoresistance behavior of the Fermi liquid state.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 3, 'D', 0],[26.0, 2, ',', 0],[15.0, 3, 'D', 0],[35.0, 2, ',', 0]

H
###Temperature dependent three-dimensional anisotropy of the magnetoresistance in WTe$_2$|L. R. Thoutam,Y. L. Wang,Z. L. Xiao,S. Das,A. Luican-Mayer,R. Divan,G. W. Crabtree,W. K. Kwok###
(436968, 436968)
 Here we report two new findings onWTe2 (1) WTe2 is electronically 3D with a mass anisotropy as low as 2,as revealed by the 3D scaling behavior of the resistanceR<missing VAR>(H,theta)R<missing VAR>(varepsilontheta H) with varepsilontheta (cos2 theta gamma-2sin2 theta)1/2, theta being the magnetic field anglewith respect to c<missing VAR>-axis of the crystal and gamma being the mass anisotropy;(2) the mass anisotropy gamma varies with temperature and follows themagnetoresistance behavior of the Fermi liquid state.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 3, 'D', 0],[35.0, 2, ',', 0],[24.0, 3, 'D', 0],[26.0, 2, ',', 0]

WTe2
###Temperature dependent three-dimensional anisotropy of the magnetoresistance in WTe$_2$|L. R. Thoutam,Y. L. Wang,Z. L. Xiao,S. Das,A. Luican-Mayer,R. Divan,G. W. Crabtree,W. K. Kwok###
(437131, 437133)
 Our results not onlyprovide a general scaling approach for the anisotropic magnetoresistance butalso are crucial for correctly understanding the electronic properties ofWTe2, including the origin of the remarkable turn-on behavior in theresistance versus temperature curve, which has been widely observed in manymaterials and assumed to be a metal-insulator transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[214.0, 3, 'D', 1],[198.0, 2, ',', 1],[187.0, 3, 'D', 1],[137.0, 2, ',', 1]

Fe5Al7
###Magnetic and magnetotransport behavior of RFe5Al7 (R= Gd and Dy): Observation of re-entrant inverse-magnetocaloric phenomenon and asymmetric magnetoresistance behavior|Venkatesh Chandragiri,Kartik K Iyer,E. V. Sampathkumaran###
(437221, 437224)
Magnetic and magnetotransport behavior of R<missing VAR>Fe5Al7 (R<missing VAR> Gd and Dy) Observation of re-entrant inverse-magnetocaloric phenomenon and asymmetric magnetoresistance behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0.4166666666666667,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Gd
###Magnetic and magnetotransport behavior of RFe5Al7 (R= Gd and Dy): Observation of re-entrant inverse-magnetocaloric phenomenon and asymmetric magnetoresistance behavior|Venkatesh Chandragiri,Kartik K Iyer,E. V. Sampathkumaran###
(437229, 437229)
Magnetic and magnetotransport behavior of R<missing VAR>Fe5Al7 (R<missing VAR> Gd and Dy) Observation of re-entrant inverse-magnetocaloric phenomenon and asymmetric magnetoresistance behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Dy
###Magnetic and magnetotransport behavior of RFe5Al7 (R= Gd and Dy): Observation of re-entrant inverse-magnetocaloric phenomenon and asymmetric magnetoresistance behavior|Venkatesh Chandragiri,Kartik K Iyer,E. V. Sampathkumaran###
(437233, 437233)
Magnetic and magnetotransport behavior of R<missing VAR>Fe5Al7 (R<missing VAR> Gd and Dy) Observation of re-entrant inverse-magnetocaloric phenomenon and asymmetric magnetoresistance behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Gd
###Magnetic and magnetotransport behavior of RFe5Al7 (R= Gd and Dy): Observation of re-entrant inverse-magnetocaloric phenomenon and asymmetric magnetoresistance behavior|Venkatesh Chandragiri,Kartik K Iyer,E. V. Sampathkumaran###
(437283, 437283)
 We have compared and contrasted magnetic, magnetocaloric and magnetoresistiveproperties of Gd and Dy members of the rare-earth (R) series R<missing VAR>Fe5Al7,crystallizing in ThMn12 structure, known to order antiferromagnetically.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Dy
###Magnetic and magnetotransport behavior of RFe5Al7 (R= Gd and Dy): Observation of re-entrant inverse-magnetocaloric phenomenon and asymmetric magnetoresistance behavior|Venkatesh Chandragiri,Kartik K Iyer,E. V. Sampathkumaran###
(437287, 437287)
 We have compared and contrasted magnetic, magnetocaloric and magnetoresistiveproperties of Gd and Dy members of the rare-earth (R) series R<missing VAR>Fe5Al7,crystallizing in ThMn12 structure, known to order antiferromagnetically.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe5Al7
###Magnetic and magnetotransport behavior of RFe5Al7 (R= Gd and Dy): Observation of re-entrant inverse-magnetocaloric phenomenon and asymmetric magnetoresistance behavior|Venkatesh Chandragiri,Kartik K Iyer,E. V. Sampathkumaran###
(437306, 437309)
 We have compared and contrasted magnetic, magnetocaloric and magnetoresistiveproperties of Gd and Dy members of the rare-earth (R) series R<missing VAR>Fe5Al7,crystallizing in ThMn12 structure, known to order antiferromagnetically.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0.4166666666666667,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ThMn12
###Magnetic and magnetotransport behavior of RFe5Al7 (R= Gd and Dy): Observation of re-entrant inverse-magnetocaloric phenomenon and asymmetric magnetoresistance behavior|Venkatesh Chandragiri,Kartik K Iyer,E. V. Sampathkumaran###
(437317, 437319)
 We have compared and contrasted magnetic, magnetocaloric and magnetoresistiveproperties of Gd and Dy members of the rare-earth (R) series R<missing VAR>Fe5Al7,crystallizing in ThMn12 structure, known to order antiferromagnetically.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.9230769230769231,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Magnetic and magnetotransport behavior of RFe5Al7 (R= Gd and Dy): Observation of re-entrant inverse-magnetocaloric phenomenon and asymmetric magnetoresistance behavior|Venkatesh Chandragiri,Kartik K Iyer,E. V. Sampathkumaran###
(437399, 437399)
 Amongother observations, we would like to emphasize on the following novel findings(i) There are multiple sign-crossovers in the temperature (T) dependence ofisothermal entropy change (DeltaS) in the case of Dy compound; in addition tonil DeltaS at the magnetic compensation point known for two-magnetic-sublatticesystems, there is an additional sign-crossover at low temperatures, as thoughthere is a re-entrant inverse magnetocaloric phenomenon.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Dy
###Magnetic and magnetotransport behavior of RFe5Al7 (R= Gd and Dy): Observation of re-entrant inverse-magnetocaloric phenomenon and asymmetric magnetoresistance behavior|Venkatesh Chandragiri,Kartik K Iyer,E. V. Sampathkumaran###
(437410, 437410)
 Amongother observations, we would like to emphasize on the following novel findings(i) There are multiple sign-crossovers in the temperature (T) dependence ofisothermal entropy change (DeltaS) in the case of Dy compound; in addition tonil DeltaS at the magnetic compensation point known for two-magnetic-sublatticesystems, there is an additional sign-crossover at low temperatures, as thoughthere is a re-entrant inverse magnetocaloric phenomenon.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Magnetic and magnetotransport behavior of RFe5Al7 (R= Gd and Dy): Observation of re-entrant inverse-magnetocaloric phenomenon and asymmetric magnetoresistance behavior|Venkatesh Chandragiri,Kartik K Iyer,E. V. Sampathkumaran###
(437425, 437425)
 Amongother observations, we would like to emphasize on the following novel findings(i) There are multiple sign-crossovers in the temperature (T) dependence ofisothermal entropy change (DeltaS) in the case of Dy compound; in addition tonil DeltaS at the magnetic compensation point known for two-magnetic-sublatticesystems, there is an additional sign-crossover at low temperatures, as thoughthere is a re-entrant inverse magnetocaloric phenomenon.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(H)
###Magnetic and magnetotransport behavior of RFe5Al7 (R= Gd and Dy): Observation of re-entrant inverse-magnetocaloric phenomenon and asymmetric magnetoresistance behavior|Venkatesh Chandragiri,Kartik K Iyer,E. V. Sampathkumaran###
(437566, 437568)
 (ii) The plotsof magnetoresistance versus magnetic field are found to be highly asymmetricwith the reversal of the direction of magnetic-field (H) well below T<missing VAR>N for bothcompounds, similar to that known for an antiferromagnetic tunnel junctions.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Magnetic and magnetotransport behavior of RFe5Al7 (R= Gd and Dy): Observation of re-entrant inverse-magnetocaloric phenomenon and asymmetric magnetoresistance behavior|Venkatesh Chandragiri,Kartik K Iyer,E. V. Sampathkumaran###
(437575, 437575)
 (ii) The plotsof magnetoresistance versus magnetic field are found to be highly asymmetricwith the reversal of the direction of magnetic-field (H) well below T<missing VAR>N for bothcompounds, similar to that known for an antiferromagnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Magnetic and magnetotransport behavior of RFe5Al7 (R= Gd and Dy): Observation of re-entrant inverse-magnetocaloric phenomenon and asymmetric magnetoresistance behavior|Venkatesh Chandragiri,Kartik K Iyer,E. V. Sampathkumaran###
(437629, 437629)
 Weattribute these to subtle changes in spin orientations of R<missing VAR> and Fe momentsinduced by T<missing VAR> and H.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Magnetic and magnetotransport behavior of RFe5Al7 (R= Gd and Dy): Observation of re-entrant inverse-magnetocaloric phenomenon and asymmetric magnetoresistance behavior|Venkatesh Chandragiri,Kartik K Iyer,E. V. Sampathkumaran###
(437642, 437642)
 Weattribute these to subtle changes in spin orientations of R<missing VAR> and Fe momentsinduced by T<missing VAR> and H.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TaP
###Negative magnetoresistance without well-defined chirality in the Weyl semimetal TaP|Frank Arnold,Chandra Shekhar,Shu-Chun Wu,Yan Sun,Ricardo Donizeth dos Reis,Nitesh Kumar,Marcel Naumann,Mukkattu O. Ajeesh,Marcus Schmidt,Adolfo G. Grushin,Jens H. Bardarson,Michael Baenitz,Dmitry Sokolov,Horst Borrmann,Michael Nicklas,Claudia Felser,Elena Hassinger,Binghai Yan###
(437673, 437674)
Negative magnetoresistance without well-defined chirality in the Weyl semimetal TaP.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WS
###Negative magnetoresistance without well-defined chirality in the Weyl semimetal TaP|Frank Arnold,Chandra Shekhar,Shu-Chun Wu,Yan Sun,Ricardo Donizeth dos Reis,Nitesh Kumar,Marcel Naumann,Mukkattu O. Ajeesh,Marcus Schmidt,Adolfo G. Grushin,Jens H. Bardarson,Michael Baenitz,Dmitry Sokolov,Horst Borrmann,Michael Nicklas,Claudia Felser,Elena Hassinger,Binghai Yan###
(437682, 437683)
 Weyl semimetals (WSMs) are topological quantum states wherein the electronicbands linearly disperse around pairs of nodes, the Weyl points, of fixed (leftor right) chirality.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WS
###Negative magnetoresistance without well-defined chirality in the Weyl semimetal TaP|Frank Arnold,Chandra Shekhar,Shu-Chun Wu,Yan Sun,Ricardo Donizeth dos Reis,Nitesh Kumar,Marcel Naumann,Mukkattu O. Ajeesh,Marcus Schmidt,Adolfo G. Grushin,Jens H. Bardarson,Michael Baenitz,Dmitry Sokolov,Horst Borrmann,Michael Nicklas,Claudia Felser,Elena Hassinger,Binghai Yan###
(437748, 437749)
 The recent discovery of WSM<missing VAR> materials triggered anexperimental search for the exotic quantum phenomenon known as the chiralanomaly.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WS
###Negative magnetoresistance without well-defined chirality in the Weyl semimetal TaP|Frank Arnold,Chandra Shekhar,Shu-Chun Wu,Yan Sun,Ricardo Donizeth dos Reis,Nitesh Kumar,Marcel Naumann,Mukkattu O. Ajeesh,Marcus Schmidt,Adolfo G. Grushin,Jens H. Bardarson,Michael Baenitz,Dmitry Sokolov,Horst Borrmann,Michael Nicklas,Claudia Felser,Elena Hassinger,Binghai Yan###
(437965, 437966)
 Here, we establish the detailed Fermi surfacetopology of the recently identified WSM<missing VAR> TaP via a combination of angle-resolvedquantum oscillation spectra and band structure calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TaP
###Negative magnetoresistance without well-defined chirality in the Weyl semimetal TaP|Frank Arnold,Chandra Shekhar,Shu-Chun Wu,Yan Sun,Ricardo Donizeth dos Reis,Nitesh Kumar,Marcel Naumann,Mukkattu O. Ajeesh,Marcus Schmidt,Adolfo G. Grushin,Jens H. Bardarson,Michael Baenitz,Dmitry Sokolov,Horst Borrmann,Michael Nicklas,Claudia Felser,Elena Hassinger,Binghai Yan###
(437969, 437970)
 Here, we establish the detailed Fermi surfacetopology of the recently identified WSM<missing VAR> TaP via a combination of angle-resolvedquantum oscillation spectra and band structure calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Negative magnetoresistance without well-defined chirality in the Weyl semimetal TaP|Frank Arnold,Chandra Shekhar,Shu-Chun Wu,Yan Sun,Ricardo Donizeth dos Reis,Nitesh Kumar,Marcel Naumann,Mukkattu O. Ajeesh,Marcus Schmidt,Adolfo G. Grushin,Jens H. Bardarson,Michael Baenitz,Dmitry Sokolov,Horst Borrmann,Michael Nicklas,Claudia Felser,Elena Hassinger,Binghai Yan###
(438070, 438070)
 Although the chiral anomaly is therefore ill-defined, weobserve a large negative magnetoresistance (NMR) appearing for collinearmagnetic and electric fields as observed in other WSMs.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WS
###Negative magnetoresistance without well-defined chirality in the Weyl semimetal TaP|Frank Arnold,Chandra Shekhar,Shu-Chun Wu,Yan Sun,Ricardo Donizeth dos Reis,Nitesh Kumar,Marcel Naumann,Mukkattu O. Ajeesh,Marcus Schmidt,Adolfo G. Grushin,Jens H. Bardarson,Michael Baenitz,Dmitry Sokolov,Horst Borrmann,Michael Nicklas,Claudia Felser,Elena Hassinger,Binghai Yan###
(438098, 438099)
 Although the chiral anomaly is therefore ill-defined, weobserve a large negative magnetoresistance (NMR) appearing for collinearmagnetic and electric fields as observed in other WSMs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Negative magnetoresistance without well-defined chirality in the Weyl semimetal TaP|Frank Arnold,Chandra Shekhar,Shu-Chun Wu,Yan Sun,Ricardo Donizeth dos Reis,Nitesh Kumar,Marcel Naumann,Mukkattu O. Ajeesh,Marcus Schmidt,Adolfo G. Grushin,Jens H. Bardarson,Michael Baenitz,Dmitry Sokolov,Horst Borrmann,Michael Nicklas,Claudia Felser,Elena Hassinger,Binghai Yan###
(438103, 438103)
 In addition, we showexperimental signatures indicating that such longitudinal magnetoresistancemeasurements can be affected by an inhomogeneous current distribution insidethe sample in a magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoS2
###Linear magnetotransport in monolayer MoS$_2$|C. M. Wang,X. L. Lei###
(438206, 438208)
Linear magnetotransport in monolayer MoS2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Linear magnetotransport in monolayer MoS$_2$|C. M. Wang,X. L. Lei###
(438277, 438277)
At low temperature, in the presence of intravalley impurity scatteringShubnikov de Haas oscillation shows up accompanying by a beating patternarising from large spin splitting and its period may halve due to high-orderoscillating term at large magnetic field for samples with ultrahigh mobility.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Linear magnetotransport in monolayer MoS$_2$|C. M. Wang,X. L. Lei###
(438375, 438375)
In the case of intervalley disorders, there exists a magnetic-field range wherethe magnetoresistivity almost vanishes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Linear magnetotransport in monolayer MoS$_2$|C. M. Wang,X. L. Lei###
(438450, 438450)
 At high temperature when Shubnikov de Haas oscillation issuppressed, the magnetophonon resonances induced by both optical phonons(mainly due to homopolar and Frohlich modes) and acoustic phonons (mainly dueto intravalley transverse and longitudinal acoustic modes) emerge for suspendedsystem with high mobility.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fr
###Linear magnetotransport in monolayer MoS$_2$|C. M. Wang,X. L. Lei###
(438500, 438500)
 At high temperature when Shubnikov de Haas oscillation issuppressed, the magnetophonon resonances induced by both optical phonons(mainly due to homopolar and Frohlich modes) and acoustic phonons (mainly dueto intravalley transverse and longitudinal acoustic modes) emerge for suspendedsystem with high mobility.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Breakdown of compensation and persistence of non-saturating magnetoresistance in WTe2 thin flakes|Yilin Wang,Kefeng Wang,Janice Reutt-Robey,Johnpierre Paglione,Michael S. Fuhrer###
(438705, 438707)
Breakdown of compensation and persistence of non-saturating magnetoresistance in WTe2 thin flakes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[304.0, 14, 'T', 6],[313.0, 2, 'x', 6]

(H)
###Breakdown of compensation and persistence of non-saturating magnetoresistance in WTe2 thin flakes|Yilin Wang,Kefeng Wang,Janice Reutt-Robey,Johnpierre Paglione,Michael S. Fuhrer###
(438731, 438733)
 We present a detailed study of magnetoresistance r<missing VAR>hoxx(H), Hall effectr<missing VAR>hoxy(H), and electrolyte gating effect in thin (<100 nm) exfoliatedcrystals of WTe2.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[278.0, 14, 'T', 5],[287.0, 2, 'x', 5]

(H)
###Breakdown of compensation and persistence of non-saturating magnetoresistance in WTe2 thin flakes|Yilin Wang,Kefeng Wang,Janice Reutt-Robey,Johnpierre Paglione,Michael S. Fuhrer###
(438744, 438746)
 We present a detailed study of magnetoresistance r<missing VAR>hoxx(H), Hall effectr<missing VAR>hoxy(H), and electrolyte gating effect in thin (<100 nm) exfoliatedcrystals of WTe2.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[265.0, 14, 'T', 5],[274.0, 2, 'x', 5]

WTe2
###Breakdown of compensation and persistence of non-saturating magnetoresistance in WTe2 thin flakes|Yilin Wang,Kefeng Wang,Janice Reutt-Robey,Johnpierre Paglione,Michael S. Fuhrer###
(438775, 438777)
 We present a detailed study of magnetoresistance r<missing VAR>hoxx(H), Hall effectr<missing VAR>hoxy(H), and electrolyte gating effect in thin (<100 nm) exfoliatedcrystals of WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[234.0, 14, 'T', 5],[243.0, 2, 'x', 5]

H
###Breakdown of compensation and persistence of non-saturating magnetoresistance in WTe2 thin flakes|Yilin Wang,Kefeng Wang,Janice Reutt-Robey,Johnpierre Paglione,Michael S. Fuhrer###
(438790, 438790)
 We observe quantum oscillations in H of both r<missing VAR>hoxx(H) andr<missing VAR>hoxy(H), and identify four oscillation frequencies consistent with previousreports in thick crystals.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[221.0, 14, 'T', 4],[230.0, 2, 'x', 4]

(H)
###Breakdown of compensation and persistence of non-saturating magnetoresistance in WTe2 thin flakes|Yilin Wang,Kefeng Wang,Janice Reutt-Robey,Johnpierre Paglione,Michael S. Fuhrer###
(438799, 438801)
 We observe quantum oscillations in H of both r<missing VAR>hoxx(H) andr<missing VAR>hoxy(H), and identify four oscillation frequencies consistent with previousreports in thick crystals.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[210.0, 14, 'T', 4],[219.0, 2, 'x', 4]

(H)
###Breakdown of compensation and persistence of non-saturating magnetoresistance in WTe2 thin flakes|Yilin Wang,Kefeng Wang,Janice Reutt-Robey,Johnpierre Paglione,Michael S. Fuhrer###
(438809, 438811)
 We observe quantum oscillations in H of both r<missing VAR>hoxx(H) andr<missing VAR>hoxy(H), and identify four oscillation frequencies consistent with previousreports in thick crystals.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[200.0, 14, 'T', 4],[209.0, 2, 'x', 4]

(H)
###Breakdown of compensation and persistence of non-saturating magnetoresistance in WTe2 thin flakes|Yilin Wang,Kefeng Wang,Janice Reutt-Robey,Johnpierre Paglione,Michael S. Fuhrer###
(438843, 438845)
 r<missing VAR>hoxy(H) is linear in H at low H consistent withnear-perfect electron-hole compensation, however becomes nonlinear and changessign with increasing H, implying a breakdown of compensation.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 14, 'T', 3],[175.0, 2, 'x', 3]

H
###Breakdown of compensation and persistence of non-saturating magnetoresistance in WTe2 thin flakes|Yilin Wang,Kefeng Wang,Janice Reutt-Robey,Johnpierre Paglione,Michael S. Fuhrer###
(438853, 438853)
 r<missing VAR>hoxy(H) is linear in H at low H consistent withnear-perfect electron-hole compensation, however becomes nonlinear and changessign with increasing H, implying a breakdown of compensation.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 14, 'T', 3],[167.0, 2, 'x', 3]

H
###Breakdown of compensation and persistence of non-saturating magnetoresistance in WTe2 thin flakes|Yilin Wang,Kefeng Wang,Janice Reutt-Robey,Johnpierre Paglione,Michael S. Fuhrer###
(438859, 438859)
 r<missing VAR>hoxy(H) is linear in H at low H consistent withnear-perfect electron-hole compensation, however becomes nonlinear and changessign with increasing H, implying a breakdown of compensation.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 14, 'T', 3],[161.0, 2, 'x', 3]

H
###Breakdown of compensation and persistence of non-saturating magnetoresistance in WTe2 thin flakes|Yilin Wang,Kefeng Wang,Janice Reutt-Robey,Johnpierre Paglione,Michael S. Fuhrer###
(438894, 438894)
 r<missing VAR>hoxy(H) is linear in H at low H consistent withnear-perfect electron-hole compensation, however becomes nonlinear and changessign with increasing H, implying a breakdown of compensation.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 14, 'T', 3],[126.0, 2, 'x', 3]

(H)
###Breakdown of compensation and persistence of non-saturating magnetoresistance in WTe2 thin flakes|Yilin Wang,Kefeng Wang,Janice Reutt-Robey,Johnpierre Paglione,Michael S. Fuhrer###
(438936, 438938)
 A field-dependentratio of carrier concentrations p/n can consistently explain r<missing VAR>hoxx(H) andr<missing VAR>hoxy(H) within a two-fluid model.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 14, 'T', 2],[82.0, 2, 'x', 2]

(H)
###Breakdown of compensation and persistence of non-saturating magnetoresistance in WTe2 thin flakes|Yilin Wang,Kefeng Wang,Janice Reutt-Robey,Johnpierre Paglione,Michael S. Fuhrer###
(438946, 438948)
 A field-dependentratio of carrier concentrations p/n can consistently explain r<missing VAR>hoxx(H) andr<missing VAR>hoxy(H) within a two-fluid model.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 14, 'T', 2],[72.0, 2, 'x', 2]

WTe2
###Breakdown of compensation and persistence of non-saturating magnetoresistance in WTe2 thin flakes|Yilin Wang,Kefeng Wang,Janice Reutt-Robey,Johnpierre Paglione,Michael S. Fuhrer###
(438982, 438984)
 We also employ an electrolytic gate tohighly electron-dope WTe2 with Li.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 14, 'T', 1],[36.0, 2, 'x', 1]

Li
###Breakdown of compensation and persistence of non-saturating magnetoresistance in WTe2 thin flakes|Yilin Wang,Kefeng Wang,Janice Reutt-Robey,Johnpierre Paglione,Michael S. Fuhrer###
(438988, 438988)
 We also employ an electrolytic gate tohighly electron-dope WTe2 with Li.
Featurization terminated normally.
0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 14, 'T', 1],[32.0, 2, 'x', 1]

(H)
###Breakdown of compensation and persistence of non-saturating magnetoresistance in WTe2 thin flakes|Yilin Wang,Kefeng Wang,Janice Reutt-Robey,Johnpierre Paglione,Michael S. Fuhrer###
(439000, 439002)
 The non-saturating r<missing VAR>hoxx(H) persists to H 14 T with magnetoresistance ratio exceeding 2 x 104 %, even with significantdeviation from perfect electron-hole compensation (p/n  0.84), where thetwo-fluid model predicts a saturating r<missing VAR>hoxx(H).
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 14, 'T', 0],[18.0, 2, 'x', 0]

H
###Breakdown of compensation and persistence of non-saturating magnetoresistance in WTe2 thin flakes|Yilin Wang,Kefeng Wang,Janice Reutt-Robey,Johnpierre Paglione,Michael S. Fuhrer###
(439008, 439008)
 The non-saturating r<missing VAR>hoxx(H) persists to H 14 T with magnetoresistance ratio exceeding 2 x 104 %, even with significantdeviation from perfect electron-hole compensation (p/n  0.84), where thetwo-fluid model predicts a saturating r<missing VAR>hoxx(H).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 14, 'T', 0],[12.0, 2, 'x', 0]

(H)
###Breakdown of compensation and persistence of non-saturating magnetoresistance in WTe2 thin flakes|Yilin Wang,Kefeng Wang,Janice Reutt-Robey,Johnpierre Paglione,Michael S. Fuhrer###
(439076, 439078)
 The non-saturating r<missing VAR>hoxx(H) persists to H 14 T with magnetoresistance ratio exceeding 2 x 104 %, even with significantdeviation from perfect electron-hole compensation (p/n  0.84), where thetwo-fluid model predicts a saturating r<missing VAR>hoxx(H).
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 14, 'T', 0],[56.0, 2, 'x', 0]

WTe2
###Breakdown of compensation and persistence of non-saturating magnetoresistance in WTe2 thin flakes|Yilin Wang,Kefeng Wang,Janice Reutt-Robey,Johnpierre Paglione,Michael S. Fuhrer###
(439113, 439115)
 Our results suggestelectron-hole compensation is not the mechanism for extremely largemagnetoresistance in WTe2, other alternative explanations need to beconsidered.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 14, 'T', 1],[93.0, 2, 'x', 1]

Pt/LaCoO3
###Extraordinary Hall resistance and unconventional magnetoresistance in Pt/LaCoO3 hybrids|T. Shang,Q. F. Zhan,H. L. Yang,Z. H. Zuo,Y. L. Xie,Y. Zhang,L. P. Liu,B. M. Wang,Y. H. Wu,S. Zhang,Run-Wei Li###
(439156, 439161)
Extraordinary Hall resistance and unconventional magnetoresistance in Pt/LaCoO3 hybrids.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[217.0, 40, 'K', 4],[220.0, 85, 'K', 4],[293.0, -4, ',', 4]

Pt
###Extraordinary Hall resistance and unconventional magnetoresistance in Pt/LaCoO3 hybrids|T. Shang,Q. F. Zhan,H. L. Yang,Z. H. Zuo,Y. L. Xie,Y. Zhang,L. P. Liu,B. M. Wang,Y. H. Wu,S. Zhang,Run-Wei Li###
(439191, 439191)
 We report an investigation of transverse Hall resistance and longitudinalresistance on Pt thin films sputtered on epitaxial LaCoO3 (L<missing VAR>CO)ferromagnetic insulator films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[187.0, 40, 'K', 3],[190.0, 85, 'K', 3],[263.0, -4, ',', 3]

LaCoO3
###Extraordinary Hall resistance and unconventional magnetoresistance in Pt/LaCoO3 hybrids|T. Shang,Q. F. Zhan,H. L. Yang,Z. H. Zuo,Y. L. Xie,Y. Zhang,L. P. Liu,B. M. Wang,Y. H. Wu,S. Zhang,Run-Wei Li###
(439203, 439206)
 We report an investigation of transverse Hall resistance and longitudinalresistance on Pt thin films sputtered on epitaxial LaCoO3 (L<missing VAR>CO)ferromagnetic insulator films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[172.0, 40, 'K', 3],[175.0, 85, 'K', 3],[248.0, -4, ',', 3]

O
###Extraordinary Hall resistance and unconventional magnetoresistance in Pt/LaCoO3 hybrids|T. Shang,Q. F. Zhan,H. L. Yang,Z. H. Zuo,Y. L. Xie,Y. Zhang,L. P. Liu,B. M. Wang,Y. H. Wu,S. Zhang,Run-Wei Li###
(439211, 439211)
 We report an investigation of transverse Hall resistance and longitudinalresistance on Pt thin films sputtered on epitaxial LaCoO3 (L<missing VAR>CO)ferromagnetic insulator films.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 40, 'K', 3],[170.0, 85, 'K', 3],[243.0, -4, ',', 3]

LaCoO3
###Extraordinary Hall resistance and unconventional magnetoresistance in Pt/LaCoO3 hybrids|T. Shang,Q. F. Zhan,H. L. Yang,Z. H. Zuo,Y. L. Xie,Y. Zhang,L. P. Liu,B. M. Wang,Y. H. Wu,S. Zhang,Run-Wei Li###
(439224, 439227)
 The LaCoO3 films were deposited on severalsingle crystalline substrates [LaAlO3 (L<missing VAR>AO), (La,Sr)(Al,Ta)O3 (L<missing VAR>SAT), andSrTiO3 (ST<missing VAR>O)] with (001) orientation.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 40, 'K', 2],[154.0, 85, 'K', 2],[227.0, -4, ',', 2]

LaAlO3
###Extraordinary Hall resistance and unconventional magnetoresistance in Pt/LaCoO3 hybrids|T. Shang,Q. F. Zhan,H. L. Yang,Z. H. Zuo,Y. L. Xie,Y. Zhang,L. P. Liu,B. M. Wang,Y. H. Wu,S. Zhang,Run-Wei Li###
(439247, 439250)
 The LaCoO3 films were deposited on severalsingle crystalline substrates [LaAlO3 (L<missing VAR>AO), (La,Sr)(Al,Ta)O3 (L<missing VAR>SAT), andSrTiO3 (ST<missing VAR>O)] with (001) orientation.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 40, 'K', 2],[131.0, 85, 'K', 2],[204.0, -4, ',', 2]

O
###Extraordinary Hall resistance and unconventional magnetoresistance in Pt/LaCoO3 hybrids|T. Shang,Q. F. Zhan,H. L. Yang,Z. H. Zuo,Y. L. Xie,Y. Zhang,L. P. Liu,B. M. Wang,Y. H. Wu,S. Zhang,Run-Wei Li###
(439255, 439255)
 The LaCoO3 films were deposited on severalsingle crystalline substrates [LaAlO3 (L<missing VAR>AO), (La,Sr)(Al,Ta)O3 (L<missing VAR>SAT), andSrTiO3 (ST<missing VAR>O)] with (001) orientation.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 40, 'K', 2],[126.0, 85, 'K', 2],[199.0, -4, ',', 2]

La
###Extraordinary Hall resistance and unconventional magnetoresistance in Pt/LaCoO3 hybrids|T. Shang,Q. F. Zhan,H. L. Yang,Z. H. Zuo,Y. L. Xie,Y. Zhang,L. P. Liu,B. M. Wang,Y. H. Wu,S. Zhang,Run-Wei Li###
(439260, 439260)
 The LaCoO3 films were deposited on severalsingle crystalline substrates [LaAlO3 (L<missing VAR>AO), (La,Sr)(Al,Ta)O3 (L<missing VAR>SAT), andSrTiO3 (ST<missing VAR>O)] with (001) orientation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 40, 'K', 2],[121.0, 85, 'K', 2],[194.0, -4, ',', 2]

Sr
###Extraordinary Hall resistance and unconventional magnetoresistance in Pt/LaCoO3 hybrids|T. Shang,Q. F. Zhan,H. L. Yang,Z. H. Zuo,Y. L. Xie,Y. Zhang,L. P. Liu,B. M. Wang,Y. H. Wu,S. Zhang,Run-Wei Li###
(439262, 439262)
 The LaCoO3 films were deposited on severalsingle crystalline substrates [LaAlO3 (L<missing VAR>AO), (La,Sr)(Al,Ta)O3 (L<missing VAR>SAT), andSrTiO3 (ST<missing VAR>O)] with (001) orientation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 40, 'K', 2],[119.0, 85, 'K', 2],[192.0, -4, ',', 2]

Al
###Extraordinary Hall resistance and unconventional magnetoresistance in Pt/LaCoO3 hybrids|T. Shang,Q. F. Zhan,H. L. Yang,Z. H. Zuo,Y. L. Xie,Y. Zhang,L. P. Liu,B. M. Wang,Y. H. Wu,S. Zhang,Run-Wei Li###
(439265, 439265)
 The LaCoO3 films were deposited on severalsingle crystalline substrates [LaAlO3 (L<missing VAR>AO), (La,Sr)(Al,Ta)O3 (L<missing VAR>SAT), andSrTiO3 (ST<missing VAR>O)] with (001) orientation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 40, 'K', 2],[116.0, 85, 'K', 2],[189.0, -4, ',', 2]

Ta
###Extraordinary Hall resistance and unconventional magnetoresistance in Pt/LaCoO3 hybrids|T. Shang,Q. F. Zhan,H. L. Yang,Z. H. Zuo,Y. L. Xie,Y. Zhang,L. P. Liu,B. M. Wang,Y. H. Wu,S. Zhang,Run-Wei Li###
(439267, 439267)
 The LaCoO3 films were deposited on severalsingle crystalline substrates [LaAlO3 (L<missing VAR>AO), (La,Sr)(Al,Ta)O3 (L<missing VAR>SAT), andSrTiO3 (ST<missing VAR>O)] with (001) orientation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 40, 'K', 2],[114.0, 85, 'K', 2],[187.0, -4, ',', 2]

O3
###Extraordinary Hall resistance and unconventional magnetoresistance in Pt/LaCoO3 hybrids|T. Shang,Q. F. Zhan,H. L. Yang,Z. H. Zuo,Y. L. Xie,Y. Zhang,L. P. Liu,B. M. Wang,Y. H. Wu,S. Zhang,Run-Wei Li###
(439269, 439270)
 The LaCoO3 films were deposited on severalsingle crystalline substrates [LaAlO3 (L<missing VAR>AO), (La,Sr)(Al,Ta)O3 (L<missing VAR>SAT), andSrTiO3 (ST<missing VAR>O)] with (001) orientation.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 40, 'K', 2],[111.0, 85, 'K', 2],[184.0, -4, ',', 2]

S
###Extraordinary Hall resistance and unconventional magnetoresistance in Pt/LaCoO3 hybrids|T. Shang,Q. F. Zhan,H. L. Yang,Z. H. Zuo,Y. L. Xie,Y. Zhang,L. P. Liu,B. M. Wang,Y. H. Wu,S. Zhang,Run-Wei Li###
(439274, 439274)
 The LaCoO3 films were deposited on severalsingle crystalline substrates [LaAlO3 (L<missing VAR>AO), (La,Sr)(Al,Ta)O3 (L<missing VAR>SAT), andSrTiO3 (ST<missing VAR>O)] with (001) orientation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 40, 'K', 2],[107.0, 85, 'K', 2],[180.0, -4, ',', 2]

SrTiO3
###Extraordinary Hall resistance and unconventional magnetoresistance in Pt/LaCoO3 hybrids|T. Shang,Q. F. Zhan,H. L. Yang,Z. H. Zuo,Y. L. Xie,Y. Zhang,L. P. Liu,B. M. Wang,Y. H. Wu,S. Zhang,Run-Wei Li###
(439283, 439286)
 The LaCoO3 films were deposited on severalsingle crystalline substrates [LaAlO3 (L<missing VAR>AO), (La,Sr)(Al,Ta)O3 (L<missing VAR>SAT), andSrTiO3 (ST<missing VAR>O)] with (001) orientation.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 40, 'K', 2],[95.0, 85, 'K', 2],[168.0, -4, ',', 2]

S
###Extraordinary Hall resistance and unconventional magnetoresistance in Pt/LaCoO3 hybrids|T. Shang,Q. F. Zhan,H. L. Yang,Z. H. Zuo,Y. L. Xie,Y. Zhang,L. P. Liu,B. M. Wang,Y. H. Wu,S. Zhang,Run-Wei Li###
(439289, 439289)
 The LaCoO3 films were deposited on severalsingle crystalline substrates [LaAlO3 (L<missing VAR>AO), (La,Sr)(Al,Ta)O3 (L<missing VAR>SAT), andSrTiO3 (ST<missing VAR>O)] with (001) orientation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 40, 'K', 2],[92.0, 85, 'K', 2],[165.0, -4, ',', 2]

O
###Extraordinary Hall resistance and unconventional magnetoresistance in Pt/LaCoO3 hybrids|T. Shang,Q. F. Zhan,H. L. Yang,Z. H. Zuo,Y. L. Xie,Y. Zhang,L. P. Liu,B. M. Wang,Y. H. Wu,S. Zhang,Run-Wei Li###
(439291, 439291)
 The LaCoO3 films were deposited on severalsingle crystalline substrates [LaAlO3 (L<missing VAR>AO), (La,Sr)(Al,Ta)O3 (L<missing VAR>SAT), andSrTiO3 (ST<missing VAR>O)] with (001) orientation.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 40, 'K', 2],[90.0, 85, 'K', 2],[163.0, -4, ',', 2]

LaCoO3
###Extraordinary Hall resistance and unconventional magnetoresistance in Pt/LaCoO3 hybrids|T. Shang,Q. F. Zhan,H. L. Yang,Z. H. Zuo,Y. L. Xie,Y. Zhang,L. P. Liu,B. M. Wang,Y. H. Wu,S. Zhang,Run-Wei Li###
(439312, 439315)
 The physical properties of LaCoO3films were characterized by the measurements of magnetic and transportproperties.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 40, 'K', 1],[66.0, 85, 'K', 1],[139.0, -4, ',', 1]

LaCoO3
###Extraordinary Hall resistance and unconventional magnetoresistance in Pt/LaCoO3 hybrids|T. Shang,Q. F. Zhan,H. L. Yang,Z. H. Zuo,Y. L. Xie,Y. Zhang,L. P. Liu,B. M. Wang,Y. H. Wu,S. Zhang,Run-Wei Li###
(439344, 439347)
 The LaCoO3 films undergo a paramagnetic to ferromagnetic (FM)transition at Curie temperatures ranging from 40 K to 85 K, below which thePt/L<missing VAR>CO hybrids exhibit significant extraordinary Hall resistance (EHR) up to 50m<missing VAR>Omega and unconventional magnetoresistance (UCMR) ratioDeltarho/rho0 about 1.2 times 10-4, accompanied by theconventional magnetoresistance (CMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 40, 'K', 0],[34.0, 85, 'K', 0],[107.0, -4, ',', 0]

F
###Extraordinary Hall resistance and unconventional magnetoresistance in Pt/LaCoO3 hybrids|T. Shang,Q. F. Zhan,H. L. Yang,Z. H. Zuo,Y. L. Xie,Y. Zhang,L. P. Liu,B. M. Wang,Y. H. Wu,S. Zhang,Run-Wei Li###
(439362, 439362)
 The LaCoO3 films undergo a paramagnetic to ferromagnetic (FM)transition at Curie temperatures ranging from 40 K to 85 K, below which thePt/L<missing VAR>CO hybrids exhibit significant extraordinary Hall resistance (EHR) up to 50m<missing VAR>Omega and unconventional magnetoresistance (UCMR) ratioDeltarho/rho0 about 1.2 times 10-4, accompanied by theconventional magnetoresistance (CMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 40, 'K', 0],[19.0, 85, 'K', 0],[92.0, -4, ',', 0]

Pt
###Extraordinary Hall resistance and unconventional magnetoresistance in Pt/LaCoO3 hybrids|T. Shang,Q. F. Zhan,H. L. Yang,Z. H. Zuo,Y. L. Xie,Y. Zhang,L. P. Liu,B. M. Wang,Y. H. Wu,S. Zhang,Run-Wei Li###
(439391, 439391)
 The LaCoO3 films undergo a paramagnetic to ferromagnetic (FM)transition at Curie temperatures ranging from 40 K to 85 K, below which thePt/L<missing VAR>CO hybrids exhibit significant extraordinary Hall resistance (EHR) up to 50m<missing VAR>Omega and unconventional magnetoresistance (UCMR) ratioDeltarho/rho0 about 1.2 times 10-4, accompanied by theconventional magnetoresistance (CMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 40, 'K', 0],[10.0, 85, 'K', 0],[63.0, -4, ',', 0]

CO
###Extraordinary Hall resistance and unconventional magnetoresistance in Pt/LaCoO3 hybrids|T. Shang,Q. F. Zhan,H. L. Yang,Z. H. Zuo,Y. L. Xie,Y. Zhang,L. P. Liu,B. M. Wang,Y. H. Wu,S. Zhang,Run-Wei Li###
(439394, 439395)
 The LaCoO3 films undergo a paramagnetic to ferromagnetic (FM)transition at Curie temperatures ranging from 40 K to 85 K, below which thePt/L<missing VAR>CO hybrids exhibit significant extraordinary Hall resistance (EHR) up to 50m<missing VAR>Omega and unconventional magnetoresistance (UCMR) ratioDeltarho/rho0 about 1.2 times 10-4, accompanied by theconventional magnetoresistance (CMR).
Featurization terminated normally.
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 40, 'K', 0],[13.0, 85, 'K', 0],[59.0, -4, ',', 0]

UC
###Extraordinary Hall resistance and unconventional magnetoresistance in Pt/LaCoO3 hybrids|T. Shang,Q. F. Zhan,H. L. Yang,Z. H. Zuo,Y. L. Xie,Y. Zhang,L. P. Liu,B. M. Wang,Y. H. Wu,S. Zhang,Run-Wei Li###
(439432, 439433)
 The LaCoO3 films undergo a paramagnetic to ferromagnetic (FM)transition at Curie temperatures ranging from 40 K to 85 K, below which thePt/L<missing VAR>CO hybrids exhibit significant extraordinary Hall resistance (EHR) up to 50m<missing VAR>Omega and unconventional magnetoresistance (UCMR) ratioDeltarho/rho0 about 1.2 times 10-4, accompanied by theconventional magnetoresistance (CMR).
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
[54.0, 40, 'K', 0],[51.0, 85, 'K', 0],[21.0, -4, ',', 0]

C
###Extraordinary Hall resistance and unconventional magnetoresistance in Pt/LaCoO3 hybrids|T. Shang,Q. F. Zhan,H. L. Yang,Z. H. Zuo,Y. L. Xie,Y. Zhang,L. P. Liu,B. M. Wang,Y. H. Wu,S. Zhang,Run-Wei Li###
(439470, 439470)
 The LaCoO3 films undergo a paramagnetic to ferromagnetic (FM)transition at Curie temperatures ranging from 40 K to 85 K, below which thePt/L<missing VAR>CO hybrids exhibit significant extraordinary Hall resistance (EHR) up to 50m<missing VAR>Omega and unconventional magnetoresistance (UCMR) ratioDeltarho/rho0 about 1.2 times 10-4, accompanied by theconventional magnetoresistance (CMR).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 40, 'K', 0],[89.0, 85, 'K', 0],[16.0, -4, ',', 0]

Y3Fe5O12
###Extraordinary Hall resistance and unconventional magnetoresistance in Pt/LaCoO3 hybrids|T. Shang,Q. F. Zhan,H. L. Yang,Z. H. Zuo,Y. L. Xie,Y. Zhang,L. P. Liu,B. M. Wang,Y. H. Wu,S. Zhang,Run-Wei Li###
(439518, 439523)
 The observed spin transport propertiesshare some common features as well as some unique characteristics when comparedwith well-studied Y3Fe5O12-based Pt thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 40, 'K', 1],[137.0, 85, 'K', 1],[64.0, -4, ',', 1]

Pt
###Extraordinary Hall resistance and unconventional magnetoresistance in Pt/LaCoO3 hybrids|T. Shang,Q. F. Zhan,H. L. Yang,Z. H. Zuo,Y. L. Xie,Y. Zhang,L. P. Liu,B. M. Wang,Y. H. Wu,S. Zhang,Run-Wei Li###
(439527, 439527)
 The observed spin transport propertiesshare some common features as well as some unique characteristics when comparedwith well-studied Y3Fe5O12-based Pt thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 40, 'K', 1],[146.0, 85, 'K', 1],[73.0, -4, ',', 1]

IrMn
###Isothermal anisotropic magnetoresistance in antiferromagnetic metallic IrMn|R. Galceran,I. Fina,J. Cisneros-Fernández,B. Bozzo,C. Frontera,L. López-Mir,H. Deniz,K. -W. Park,B. -G. Park,Ll. Balcells,X. Martí,T. Jungwirth,B. Martínez###
(439599, 439600)
Isothermal anisotropic magnetoresistance in antiferromagnetic metallic IrMn.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Isothermal anisotropic magnetoresistance in antiferromagnetic metallic IrMn|R. Galceran,I. Fina,J. Cisneros-Fernández,B. Bozzo,C. Frontera,L. López-Mir,H. Deniz,K. -W. Park,B. -G. Park,Ll. Balcells,X. Martí,T. Jungwirth,B. Martínez###
(439682, 439682)
 Moreover, alarge list of aniferromagnetic semiconductors and metals with Neeltemperatures above room temperature exists.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Isothermal anisotropic magnetoresistance in antiferromagnetic metallic IrMn|R. Galceran,I. Fina,J. Cisneros-Fernández,B. Bozzo,C. Frontera,L. López-Mir,H. Deniz,K. -W. Park,B. -G. Park,Ll. Balcells,X. Martí,T. Jungwirth,B. Martínez###
(439697, 439697)
 In the present manuscript, wepersevere in the quest for the limits of how large can anisotropicmagnetoresistance be in antiferromagnetic materials with very large spin-orbitcoupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

IrMn
###Isothermal anisotropic magnetoresistance in antiferromagnetic metallic IrMn|R. Galceran,I. Fina,J. Cisneros-Fernández,B. Bozzo,C. Frontera,L. López-Mir,H. Deniz,K. -W. Park,B. -G. Park,Ll. Balcells,X. Martí,T. Jungwirth,B. Martínez###
(439762, 439763)
 We selected IrMn as a prime example of first-class moment (Mn) andspin-orbit (Ir) combination.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(Mn)
###Isothermal anisotropic magnetoresistance in antiferromagnetic metallic IrMn|R. Galceran,I. Fina,J. Cisneros-Fernández,B. Bozzo,C. Frontera,L. López-Mir,H. Deniz,K. -W. Park,B. -G. Park,Ll. Balcells,X. Martí,T. Jungwirth,B. Martínez###
(439781, 439783)
 We selected IrMn as a prime example of first-class moment (Mn) andspin-orbit (Ir) combination.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(Ir)
###Isothermal anisotropic magnetoresistance in antiferromagnetic metallic IrMn|R. Galceran,I. Fina,J. Cisneros-Fernández,B. Bozzo,C. Frontera,L. López-Mir,H. Deniz,K. -W. Park,B. -G. Park,Ll. Balcells,X. Martí,T. Jungwirth,B. Martínez###
(439792, 439794)
 We selected IrMn as a prime example of first-class moment (Mn) andspin-orbit (Ir) combination.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(IrMn)
###Isothermal anisotropic magnetoresistance in antiferromagnetic metallic IrMn|R. Galceran,I. Fina,J. Cisneros-Fernández,B. Bozzo,C. Frontera,L. López-Mir,H. Deniz,K. -W. Park,B. -G. Park,Ll. Balcells,X. Martí,T. Jungwirth,B. Martínez###
(439813, 439816)
 Isothermal magnetotransport measurements in anantiferromagnetic-metal(IrMn)/ferromagnetic-insulator thin film bilayer havebeen performed.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

IrMn
###Isothermal anisotropic magnetoresistance in antiferromagnetic metallic IrMn|R. Galceran,I. Fina,J. Cisneros-Fernández,B. Bozzo,C. Frontera,L. López-Mir,H. Deniz,K. -W. Park,B. -G. Park,Ll. Balcells,X. Martí,T. Jungwirth,B. Martínez###
(439930, 439931)
 Anisotropicmagnetoresistance as large as 0.15 % has been found, which is much larger thanthat for a bare IrMn layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###A magnetic skyrmion as a non-linear resistive element - a potential building block for reservoir computing|Diana Prychynenko,Matthias Sitte,Kai Litzius,Benjamin Krüger,George Bourianoff,Mathias Kläui,Jairo Sinova,Karin Everschor-Sitte###
(440331, 440331)
 In order to pave the waytowards reservoir computing systems based on skyrmion fabrics, here we simulateand analyze i) the current flow through a single magnetic skyrmion due to theanisotropic magneto-resistive effect and ii) the combined physics of localpinning and the anisotropic magneto-resistive effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZrSiSe
###Three-Dimensional Anisotropic Magnetoresistance in the Dirac Node-Line Material ZrSiSe|Haiyang Pan,Bingbing Tong,Jihai Yu,Jue Wang,Dongzhi Fu,Shuai Zhang,Bin Wu,Xiangang Wan,Chi Zhang,Xuefeng Wang,Fengqi Song###
(440465, 440467)
Three-Dimensional Anisotropic Magnetoresistance in the Dirac Node-Line Material ZrSiSe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 3, 'T', 3],[192.0, 7, 'at', 4],[193.0, 3, 'T', 4],[334.0, 3, 'D', 8]

ZrSi
###Three-Dimensional Anisotropic Magnetoresistance in the Dirac Node-Line Material ZrSiSe|Haiyang Pan,Bingbing Tong,Jihai Yu,Jue Wang,Dongzhi Fu,Shuai Zhang,Bin Wu,Xiangang Wan,Chi Zhang,Xuefeng Wang,Fengqi Song###
(440482, 440483)
 The family of materials defined as ZrSiX<missing VAR> (X<missing VAR>  S, Se, Te) has been establishedas Dirac node-line semimetals, and subsequent study is urgent to exploit thepromising application of unusual magnetoresistance property.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 3, 'T', 2],[176.0, 7, 'at', 3],[177.0, 3, 'T', 3],[318.0, 3, 'D', 7]

S
###Three-Dimensional Anisotropic Magnetoresistance in the Dirac Node-Line Material ZrSiSe|Haiyang Pan,Bingbing Tong,Jihai Yu,Jue Wang,Dongzhi Fu,Shuai Zhang,Bin Wu,Xiangang Wan,Chi Zhang,Xuefeng Wang,Fengqi Song###
(440490, 440490)
 The family of materials defined as ZrSiX<missing VAR> (X<missing VAR>  S, Se, Te) has been establishedas Dirac node-line semimetals, and subsequent study is urgent to exploit thepromising application of unusual magnetoresistance property.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 3, 'T', 2],[169.0, 7, 'at', 3],[170.0, 3, 'T', 3],[311.0, 3, 'D', 7]

Se
###Three-Dimensional Anisotropic Magnetoresistance in the Dirac Node-Line Material ZrSiSe|Haiyang Pan,Bingbing Tong,Jihai Yu,Jue Wang,Dongzhi Fu,Shuai Zhang,Bin Wu,Xiangang Wan,Chi Zhang,Xuefeng Wang,Fengqi Song###
(440493, 440493)
 The family of materials defined as ZrSiX<missing VAR> (X<missing VAR>  S, Se, Te) has been establishedas Dirac node-line semimetals, and subsequent study is urgent to exploit thepromising application of unusual magnetoresistance property.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 3, 'T', 2],[166.0, 7, 'at', 3],[167.0, 3, 'T', 3],[308.0, 3, 'D', 7]

Te
###Three-Dimensional Anisotropic Magnetoresistance in the Dirac Node-Line Material ZrSiSe|Haiyang Pan,Bingbing Tong,Jihai Yu,Jue Wang,Dongzhi Fu,Shuai Zhang,Bin Wu,Xiangang Wan,Chi Zhang,Xuefeng Wang,Fengqi Song###
(440496, 440496)
 The family of materials defined as ZrSiX<missing VAR> (X<missing VAR>  S, Se, Te) has been establishedas Dirac node-line semimetals, and subsequent study is urgent to exploit thepromising application of unusual magnetoresistance property.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 3, 'T', 2],[163.0, 7, 'at', 3],[164.0, 3, 'T', 3],[305.0, 3, 'D', 7]

In
###Three-Dimensional Anisotropic Magnetoresistance in the Dirac Node-Line Material ZrSiSe|Haiyang Pan,Bingbing Tong,Jihai Yu,Jue Wang,Dongzhi Fu,Shuai Zhang,Bin Wu,Xiangang Wan,Chi Zhang,Xuefeng Wang,Fengqi Song###
(440547, 440547)
 In this work, wesystematically investigated the anisotropic magnetoresistance in thenewly-discovered Dirac node-line material ZrSiSe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 3, 'T', 1],[112.0, 7, 'at', 2],[113.0, 3, 'T', 2],[254.0, 3, 'D', 6]

ZrSiSe
###Three-Dimensional Anisotropic Magnetoresistance in the Dirac Node-Line Material ZrSiSe|Haiyang Pan,Bingbing Tong,Jihai Yu,Jue Wang,Dongzhi Fu,Shuai Zhang,Bin Wu,Xiangang Wan,Chi Zhang,Xuefeng Wang,Fengqi Song###
(440584, 440586)
 In this work, wesystematically investigated the anisotropic magnetoresistance in thenewly-discovered Dirac node-line material ZrSiSe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 3, 'T', 1],[73.0, 7, 'at', 2],[74.0, 3, 'T', 2],[215.0, 3, 'D', 6]

H
###Three-Dimensional Anisotropic Magnetoresistance in the Dirac Node-Line Material ZrSiSe|Haiyang Pan,Bingbing Tong,Jihai Yu,Jue Wang,Dongzhi Fu,Shuai Zhang,Bin Wu,Xiangang Wan,Chi Zhang,Xuefeng Wang,Fengqi Song###
(440740, 440740)
 This is further confirmed by the angular-dependentShubnikov-de Haas (SdH) oscillations.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 3, 'T', 3],[81.0, 7, 'at', 2],[80.0, 3, 'T', 2],[61.0, 3, 'D', 2]

ZrSiSe
###Three-Dimensional Anisotropic Magnetoresistance in the Dirac Node-Line Material ZrSiSe|Haiyang Pan,Bingbing Tong,Jihai Yu,Jue Wang,Dongzhi Fu,Shuai Zhang,Bin Wu,Xiangang Wan,Chi Zhang,Xuefeng Wang,Fengqi Song###
(440829, 440831)
 Our findings shed light on the 3D mapping of MR and thepotential applications in magnetic sensors based on ZrSiSe Dirac materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[228.0, 3, 'T', 5],[170.0, 7, 'at', 4],[169.0, 3, 'T', 4],[28.0, 3, 'D', 0]

PtBi2
###Observation of Dirac surface states in the hexagonal PtBi2, a possible origin of the linear magnetoresistance|S. Thirupathaiah,Y. Kushnirenko,E. Haubold,A. V. Fedorov,E. D. L. Rienks,T. K. Kim,A. N. Yaresko,C. G. F. Blum,S. Aswartham,B. Büchner,S. V. Borisenko###
(440862, 440864)
Observation of Dirac surface states in the hexagonal PtBi2, a possible origin of the linear magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[245.0, 900, 'meV', 4]

PtBi2
###Observation of Dirac surface states in the hexagonal PtBi2, a possible origin of the linear magnetoresistance|S. Thirupathaiah,Y. Kushnirenko,E. Haubold,A. V. Fedorov,E. D. L. Rienks,T. K. Kim,A. N. Yaresko,C. G. F. Blum,S. Aswartham,B. Büchner,S. V. Borisenko###
(440935, 440937)
 PtBi2 is one of such interestingcompounds showing large linear magnetoresistance (MR) in its both the hexagonaland pyrite crystal structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[172.0, 900, 'meV', 2]

S
###Observation of Dirac surface states in the hexagonal PtBi2, a possible origin of the linear magnetoresistance|S. Thirupathaiah,Y. Kushnirenko,E. Haubold,A. V. Fedorov,E. D. L. Rienks,T. K. Kim,A. N. Yaresko,C. G. F. Blum,S. Aswartham,B. Büchner,S. V. Borisenko###
(441003, 441003)
 We use angle-resolved photoelectron spectroscopy(ARPES) and density functional theory (DFT) calculations to understand themechanism of liner MR observed in the hexagonal PtBi2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 900, 'meV', 1]

PtBi2
###Observation of Dirac surface states in the hexagonal PtBi2, a possible origin of the linear magnetoresistance|S. Thirupathaiah,Y. Kushnirenko,E. Haubold,A. V. Fedorov,E. D. L. Rienks,T. K. Kim,A. N. Yaresko,C. G. F. Blum,S. Aswartham,B. Büchner,S. V. Borisenko###
(441046, 441048)
 We use angle-resolved photoelectron spectroscopy(ARPES) and density functional theory (DFT) calculations to understand themechanism of liner MR observed in the hexagonal PtBi2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 900, 'meV', 1]

LaSb
###Separation of Electron and Hole Dynamics in the Semimetal LaSb|F. Han,J. Xu,A. S. Botana,Z. L. Xiao,Y. L. Wang,W. G. Yang,D. Y. Chung,M. G. Kanatzidis,M. R. Norman,G. W. Crabtree,W. K. Kwok###
(441321, 441322)
Separation of Electron and Hole Dynamics in the Semimetal LaSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaSb
###Separation of Electron and Hole Dynamics in the Semimetal LaSb|F. Han,J. Xu,A. S. Botana,Z. L. Xiao,Y. L. Wang,W. G. Yang,D. Y. Chung,M. G. Kanatzidis,M. R. Norman,G. W. Crabtree,W. K. Kwok###
(441339, 441340)
 We report investigations on the magnetotransport in LaSb, which exhibitsextremely large magnetoresistance (XMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Separation of Electron and Hole Dynamics in the Semimetal LaSb|F. Han,J. Xu,A. S. Botana,Z. L. Xiao,Y. L. Wang,W. G. Yang,D. Y. Chung,M. G. Kanatzidis,M. R. Norman,G. W. Crabtree,W. K. Kwok###
(441417, 441417)
We then determine the Fermi surface from Shubnikov - de Haas (SdH) quantumoscillation measurements and find good agreement with the bulk Fermi pocketsderived from first principle calculations.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaSb
###Separation of Electron and Hole Dynamics in the Semimetal LaSb|F. Han,J. Xu,A. S. Botana,Z. L. Xiao,Y. L. Wang,W. G. Yang,D. Y. Chung,M. G. Kanatzidis,M. R. Norman,G. W. Crabtree,W. K. Kwok###
(441523, 441524)
 We show that theorigin of XMR in LaSb lies in its high mobility with diminishing Hall effect,where the high mobility leads to a strong magnetic field dependence of thelongitudinal magnetoconductance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

VSe2
###Signatures of the Kondo effect in VSe2|Sourabh Barua,M. Ciomaga Hatnean,M. R. Lees,G. Balakrishnan###
(441860, 441862)
Signatures of the Kondo effect in VSe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

VSe2
###Signatures of the Kondo effect in VSe2|Sourabh Barua,M. Ciomaga Hatnean,M. R. Lees,G. Balakrishnan###
(441865, 441867)
 VSe2 is a transition metal dichaclogenide which has a charge-density wavetransition that has been well studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

VSe2
###Signatures of the Kondo effect in VSe2|Sourabh Barua,M. Ciomaga Hatnean,M. R. Lees,G. Balakrishnan###
(441981, 441983)
 We report on a low-temperature upturn inthe resistivity and, at temperatures below this resistivity minimum, an unusualmagnetoresistance which is negative at low fields and positive at higherfields, in single crystals of VSe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

VSe2
###Signatures of the Kondo effect in VSe2|Sourabh Barua,M. Ciomaga Hatnean,M. R. Lees,G. Balakrishnan###
(442067, 442069)
 We interpret these results as signatures of the Kondo effect in VSe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Signatures of the Kondo effect in VSe2|Sourabh Barua,M. Ciomaga Hatnean,M. R. Lees,G. Balakrishnan###
(442093, 442093)
An upturn in the susceptibility indicates the presence of interlayer V ionswhich can provide the localized magnetic moments required for scattering theconduction electrons in the Kondo effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Signatures of the Kondo effect in VSe2|Sourabh Barua,M. Ciomaga Hatnean,M. R. Lees,G. Balakrishnan###
(442225, 442225)
 The low-temperature behaviour of theheat capacity, including a high value of gamma, along with a deviation from aCurie-Weiss law observed in the low-temperature magnetic susceptibility, areconsistent with the presence of magnetic interactions between the paramagneticinterlayer V ions and a Kondo screening of these V moments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Signatures of the Kondo effect in VSe2|Sourabh Barua,M. Ciomaga Hatnean,M. R. Lees,G. Balakrishnan###
(442241, 442241)
 The low-temperature behaviour of theheat capacity, including a high value of gamma, along with a deviation from aCurie-Weiss law observed in the low-temperature magnetic susceptibility, areconsistent with the presence of magnetic interactions between the paramagneticinterlayer V ions and a Kondo screening of these V moments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFeB
###Tunneling magnetoresistance of perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Alexander Böhnke,Panagiota Bougiatioti,Robin Klett,Karsten Rott,Alessia Niesen,Jan-Michael Schmalhorst,Günter Reiss###
(442262, 442264)
Tunneling magnetoresistance of perpendicular CoFeB-based junctions with exchange bias.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, -500, ',', 4]

In
###Tunneling magnetoresistance of perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Alexander Böhnke,Panagiota Bougiatioti,Robin Klett,Karsten Rott,Alessia Niesen,Jan-Michael Schmalhorst,Günter Reiss###
(442314, 442314)
 In this paperwe examine the tunnel magnetoresistance ofTa/Pd/IrMn/Co-Fe/Ta/Co-Fe-B/MgO/Co-Fe-B/capping/Pd magnetic tunnel junctions independence on the capping layer, i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, -500, ',', 2]

Ta/Pd/IrMn/Co
###Tunneling magnetoresistance of perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Alexander Böhnke,Panagiota Bougiatioti,Robin Klett,Karsten Rott,Alessia Niesen,Jan-Michael Schmalhorst,Günter Reiss###
(442334, 442341)
 In this paperwe examine the tunnel magnetoresistance ofTa/Pd/IrMn/Co-Fe/Ta/Co-Fe-B/MgO/Co-Fe-B/capping/Pd magnetic tunnel junctions independence on the capping layer, i.e.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[75.0, -500, ',', 2]

Fe/Ta/Co
###Tunneling magnetoresistance of perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Alexander Böhnke,Panagiota Bougiatioti,Robin Klett,Karsten Rott,Alessia Niesen,Jan-Michael Schmalhorst,Günter Reiss###
(442343, 442347)
 In this paperwe examine the tunnel magnetoresistance ofTa/Pd/IrMn/Co-Fe/Ta/Co-Fe-B/MgO/Co-Fe-B/capping/Pd magnetic tunnel junctions independence on the capping layer, i.e.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[69.0, -500, ',', 2]

Fe
###Tunneling magnetoresistance of perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Alexander Böhnke,Panagiota Bougiatioti,Robin Klett,Karsten Rott,Alessia Niesen,Jan-Michael Schmalhorst,Günter Reiss###
(442349, 442349)
 In this paperwe examine the tunnel magnetoresistance ofTa/Pd/IrMn/Co-Fe/Ta/Co-Fe-B/MgO/Co-Fe-B/capping/Pd magnetic tunnel junctions independence on the capping layer, i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, -500, ',', 2]

B/MgO/Co
###Tunneling magnetoresistance of perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Alexander Böhnke,Panagiota Bougiatioti,Robin Klett,Karsten Rott,Alessia Niesen,Jan-Michael Schmalhorst,Günter Reiss###
(442351, 442356)
 In this paperwe examine the tunnel magnetoresistance ofTa/Pd/IrMn/Co-Fe/Ta/Co-Fe-B/MgO/Co-Fe-B/capping/Pd magnetic tunnel junctions independence on the capping layer, i.e.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[60.0, -500, ',', 2]

Fe
###Tunneling magnetoresistance of perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Alexander Böhnke,Panagiota Bougiatioti,Robin Klett,Karsten Rott,Alessia Niesen,Jan-Michael Schmalhorst,Günter Reiss###
(442358, 442358)
 In this paperwe examine the tunnel magnetoresistance ofTa/Pd/IrMn/Co-Fe/Ta/Co-Fe-B/MgO/Co-Fe-B/capping/Pd magnetic tunnel junctions independence on the capping layer, i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, -500, ',', 2]

B
###Tunneling magnetoresistance of perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Alexander Böhnke,Panagiota Bougiatioti,Robin Klett,Karsten Rott,Alessia Niesen,Jan-Michael Schmalhorst,Günter Reiss###
(442360, 442360)
 In this paperwe examine the tunnel magnetoresistance ofTa/Pd/IrMn/Co-Fe/Ta/Co-Fe-B/MgO/Co-Fe-B/capping/Pd magnetic tunnel junctions independence on the capping layer, i.e.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, -500, ',', 2]

Pd
###Tunneling magnetoresistance of perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Alexander Böhnke,Panagiota Bougiatioti,Robin Klett,Karsten Rott,Alessia Niesen,Jan-Michael Schmalhorst,Günter Reiss###
(442364, 442364)
 In this paperwe examine the tunnel magnetoresistance ofTa/Pd/IrMn/Co-Fe/Ta/Co-Fe-B/MgO/Co-Fe-B/capping/Pd magnetic tunnel junctions independence on the capping layer, i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, -500, ',', 2]

Hf
###Tunneling magnetoresistance of perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Alexander Böhnke,Panagiota Bougiatioti,Robin Klett,Karsten Rott,Alessia Niesen,Jan-Michael Schmalhorst,Günter Reiss###
(442392, 442392)
, Hf or Ta.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, -500, ',', 1]

Ta
###Tunneling magnetoresistance of perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Alexander Böhnke,Panagiota Bougiatioti,Robin Klett,Karsten Rott,Alessia Niesen,Jan-Michael Schmalhorst,Günter Reiss###
(442396, 442396)
, Hf or Ta.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, -500, ',', 1]

In
###Tunneling magnetoresistance of perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Alexander Böhnke,Panagiota Bougiatioti,Robin Klett,Karsten Rott,Alessia Niesen,Jan-Michael Schmalhorst,Günter Reiss###
(442399, 442399)
 In these stacks perpendicularexchange bias fields of -500,Oe along with perpendicular magnetic anisotropyare combined.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, -500, ',', 0]

Hf
###Tunneling magnetoresistance of perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Alexander Böhnke,Panagiota Bougiatioti,Robin Klett,Karsten Rott,Alessia Niesen,Jan-Michael Schmalhorst,Günter Reiss###
(442457, 442457)
 A tunnel magnetoresistance of (47.2pm 1.4)% for the Hf-cappedsample was determined compared to the Ta one (42.6pm 0.7)% at roomtemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, -500, ',', 1]

Ta
###Tunneling magnetoresistance of perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Alexander Böhnke,Panagiota Bougiatioti,Robin Klett,Karsten Rott,Alessia Niesen,Jan-Michael Schmalhorst,Günter Reiss###
(442474, 442474)
 A tunnel magnetoresistance of (47.2pm 1.4)% for the Hf-cappedsample was determined compared to the Ta one (42.6pm 0.7)% at roomtemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, -500, ',', 1]

Hf
###Tunneling magnetoresistance of perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Alexander Böhnke,Panagiota Bougiatioti,Robin Klett,Karsten Rott,Alessia Niesen,Jan-Michael Schmalhorst,Günter Reiss###
(442518, 442518)
 Interestingly, this observation is correlated to the higher boronabsorption of Hf compared to Ta which prevents the suppression ofDeltatextrm1 channel and leads to higher tunnel magnetoresistancevalues.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, -500, ',', 2]

Ta
###Tunneling magnetoresistance of perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Alexander Böhnke,Panagiota Bougiatioti,Robin Klett,Karsten Rott,Alessia Niesen,Jan-Michael Schmalhorst,Günter Reiss###
(442524, 442524)
 Interestingly, this observation is correlated to the higher boronabsorption of Hf compared to Ta which prevents the suppression ofDeltatextrm1 channel and leads to higher tunnel magnetoresistancevalues.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, -500, ',', 2]

CoFeB
###Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Panagiota Bougiatioti,Denis Dyck,Torsten Huebner,Karsten Rott,Jan-Michael Schmalhorst,Günter Reiss###
(442688, 442690)
Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 79.6, ',', 2],[183.0, 0.3, ',', 2],[196.0, 1.05, ',', 3],[235.0, 0.4, ',', 4],[241.0, 2, ',', 4],[249.0, 1.2, ',', 4],[281.0, 330, ',', 4],[287.0, 60, 'min', 4],[325.0, 340, ',', 4],[331.0, 60, 'min', 4],[354.0, 65.5, '%', 5],[369.0, 300, ',', 5],[375.0, 60, 'min', 5],[391.0, 10, '%', 5],[408.0, 330, ',', 5],[420.0, 14, '%', 5],[436.0, 300, ',', 5],[442.0, 90, 'min', 5]

Ta
###Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Panagiota Bougiatioti,Denis Dyck,Torsten Huebner,Karsten Rott,Jan-Michael Schmalhorst,Günter Reiss###
(442745, 442745)
 We investigate the dependence of magnetic properties on the post-annealingtemperature/time, the thickness of soft ferromagnetic electrode and Ta dustinglayer in the pinned electrode as well as their correlation with the tunnelmagnetoresistance ratio, in a series of perpendicular magnetic tunnel junctionsof materials sequenceTa/Pd/IrMn/CoFe/Ta(textitx)/CoFeB/MgO(textity)/CoFeB(textitz)/Ta/Pd.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 79.6, ',', 1],[128.0, 0.3, ',', 1],[141.0, 1.05, ',', 2],[180.0, 0.4, ',', 3],[186.0, 2, ',', 3],[194.0, 1.2, ',', 3],[226.0, 330, ',', 3],[232.0, 60, 'min', 3],[270.0, 340, ',', 3],[276.0, 60, 'min', 3],[299.0, 65.5, '%', 4],[314.0, 300, ',', 4],[320.0, 60, 'min', 4],[336.0, 10, '%', 4],[353.0, 330, ',', 4],[365.0, 14, '%', 4],[381.0, 300, ',', 4],[387.0, 90, 'min', 4]

Ta/Pd/IrMn/CoFe
###Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Panagiota Bougiatioti,Denis Dyck,Torsten Huebner,Karsten Rott,Jan-Michael Schmalhorst,Günter Reiss###
(442806, 442814)
 We investigate the dependence of magnetic properties on the post-annealingtemperature/time, the thickness of soft ferromagnetic electrode and Ta dustinglayer in the pinned electrode as well as their correlation with the tunnelmagnetoresistance ratio, in a series of perpendicular magnetic tunnel junctionsof materials sequenceTa/Pd/IrMn/CoFe/Ta(textitx)/CoFeB/MgO(textity)/CoFeB(textitz)/Ta/Pd.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[49.0, 79.6, ',', 1],[59.0, 0.3, ',', 1],[72.0, 1.05, ',', 2],[111.0, 0.4, ',', 3],[117.0, 2, ',', 3],[125.0, 1.2, ',', 3],[157.0, 330, ',', 3],[163.0, 60, 'min', 3],[201.0, 340, ',', 3],[207.0, 60, 'min', 3],[230.0, 65.5, '%', 4],[245.0, 300, ',', 4],[251.0, 60, 'min', 4],[267.0, 10, '%', 4],[284.0, 330, ',', 4],[296.0, 14, '%', 4],[312.0, 300, ',', 4],[318.0, 90, 'min', 4]

Ta
###Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Panagiota Bougiatioti,Denis Dyck,Torsten Huebner,Karsten Rott,Jan-Michael Schmalhorst,Günter Reiss###
(442816, 442816)
 We investigate the dependence of magnetic properties on the post-annealingtemperature/time, the thickness of soft ferromagnetic electrode and Ta dustinglayer in the pinned electrode as well as their correlation with the tunnelmagnetoresistance ratio, in a series of perpendicular magnetic tunnel junctionsof materials sequenceTa/Pd/IrMn/CoFe/Ta(textitx)/CoFeB/MgO(textity)/CoFeB(textitz)/Ta/Pd.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 79.6, ',', 1],[57.0, 0.3, ',', 1],[70.0, 1.05, ',', 2],[109.0, 0.4, ',', 3],[115.0, 2, ',', 3],[123.0, 1.2, ',', 3],[155.0, 330, ',', 3],[161.0, 60, 'min', 3],[199.0, 340, ',', 3],[205.0, 60, 'min', 3],[228.0, 65.5, '%', 4],[243.0, 300, ',', 4],[249.0, 60, 'min', 4],[265.0, 10, '%', 4],[282.0, 330, ',', 4],[294.0, 14, '%', 4],[310.0, 300, ',', 4],[316.0, 90, 'min', 4]

O
###Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Panagiota Bougiatioti,Denis Dyck,Torsten Huebner,Karsten Rott,Jan-Michael Schmalhorst,Günter Reiss###
(442827, 442827)
 We investigate the dependence of magnetic properties on the post-annealingtemperature/time, the thickness of soft ferromagnetic electrode and Ta dustinglayer in the pinned electrode as well as their correlation with the tunnelmagnetoresistance ratio, in a series of perpendicular magnetic tunnel junctionsof materials sequenceTa/Pd/IrMn/CoFe/Ta(textitx)/CoFeB/MgO(textity)/CoFeB(textitz)/Ta/Pd.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 79.6, ',', 1],[46.0, 0.3, ',', 1],[59.0, 1.05, ',', 2],[98.0, 0.4, ',', 3],[104.0, 2, ',', 3],[112.0, 1.2, ',', 3],[144.0, 330, ',', 3],[150.0, 60, 'min', 3],[188.0, 340, ',', 3],[194.0, 60, 'min', 3],[217.0, 65.5, '%', 4],[232.0, 300, ',', 4],[238.0, 60, 'min', 4],[254.0, 10, '%', 4],[271.0, 330, ',', 4],[283.0, 14, '%', 4],[299.0, 300, ',', 4],[305.0, 90, 'min', 4]

B
###Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Panagiota Bougiatioti,Denis Dyck,Torsten Huebner,Karsten Rott,Jan-Michael Schmalhorst,Günter Reiss###
(442835, 442835)
 We investigate the dependence of magnetic properties on the post-annealingtemperature/time, the thickness of soft ferromagnetic electrode and Ta dustinglayer in the pinned electrode as well as their correlation with the tunnelmagnetoresistance ratio, in a series of perpendicular magnetic tunnel junctionsof materials sequenceTa/Pd/IrMn/CoFe/Ta(textitx)/CoFeB/MgO(textity)/CoFeB(textitz)/Ta/Pd.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 79.6, ',', 1],[38.0, 0.3, ',', 1],[51.0, 1.05, ',', 2],[90.0, 0.4, ',', 3],[96.0, 2, ',', 3],[104.0, 1.2, ',', 3],[136.0, 330, ',', 3],[142.0, 60, 'min', 3],[180.0, 340, ',', 3],[186.0, 60, 'min', 3],[209.0, 65.5, '%', 4],[224.0, 300, ',', 4],[230.0, 60, 'min', 4],[246.0, 10, '%', 4],[263.0, 330, ',', 4],[275.0, 14, '%', 4],[291.0, 300, ',', 4],[297.0, 90, 'min', 4]

Ta/Pd
###Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Panagiota Bougiatioti,Denis Dyck,Torsten Huebner,Karsten Rott,Jan-Michael Schmalhorst,Günter Reiss###
(442841, 442843)
 We investigate the dependence of magnetic properties on the post-annealingtemperature/time, the thickness of soft ferromagnetic electrode and Ta dustinglayer in the pinned electrode as well as their correlation with the tunnelmagnetoresistance ratio, in a series of perpendicular magnetic tunnel junctionsof materials sequenceTa/Pd/IrMn/CoFe/Ta(textitx)/CoFeB/MgO(textity)/CoFeB(textitz)/Ta/Pd.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[20.0, 79.6, ',', 1],[30.0, 0.3, ',', 1],[43.0, 1.05, ',', 2],[82.0, 0.4, ',', 3],[88.0, 2, ',', 3],[96.0, 1.2, ',', 3],[128.0, 330, ',', 3],[134.0, 60, 'min', 3],[172.0, 340, ',', 3],[178.0, 60, 'min', 3],[201.0, 65.5, '%', 4],[216.0, 300, ',', 4],[222.0, 60, 'min', 4],[238.0, 10, '%', 4],[255.0, 330, ',', 4],[267.0, 14, '%', 4],[283.0, 300, ',', 4],[289.0, 90, 'min', 4]

C
###Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Panagiota Bougiatioti,Denis Dyck,Torsten Huebner,Karsten Rott,Jan-Michael Schmalhorst,Günter Reiss###
(442974, 442974)
 For stacks withx<missing VAR>0.4,nm, y<missing VAR>2,nm, and z<missing VAR>1.20,nm, the exchange bias presents asignificant decrease at post annealing temperatureT<missing VAR>textrmann330,circC for 60 min, while the interlayer exchangecoupling and the saturation magnetization per unit area sharply decay atT<missing VAR>textrmann340,circC for 60 min.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 79.6, ',', 2],[101.0, 0.3, ',', 2],[88.0, 1.05, ',', 1],[49.0, 0.4, ',', 0],[43.0, 2, ',', 0],[35.0, 1.2, ',', 0],[3.0, 330, ',', 0],[3.0, 60, 'min', 0],[41.0, 340, ',', 0],[47.0, 60, 'min', 0],[70.0, 65.5, '%', 1],[85.0, 300, ',', 1],[91.0, 60, 'min', 1],[107.0, 10, '%', 1],[124.0, 330, ',', 1],[136.0, 14, '%', 1],[152.0, 300, ',', 1],[158.0, 90, 'min', 1]

C
###Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Panagiota Bougiatioti,Denis Dyck,Torsten Huebner,Karsten Rott,Jan-Michael Schmalhorst,Günter Reiss###
(443018, 443018)
 For stacks withx<missing VAR>0.4,nm, y<missing VAR>2,nm, and z<missing VAR>1.20,nm, the exchange bias presents asignificant decrease at post annealing temperatureT<missing VAR>textrmann330,circC for 60 min, while the interlayer exchangecoupling and the saturation magnetization per unit area sharply decay atT<missing VAR>textrmann340,circC for 60 min.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 79.6, ',', 2],[145.0, 0.3, ',', 2],[132.0, 1.05, ',', 1],[93.0, 0.4, ',', 0],[87.0, 2, ',', 0],[79.0, 1.2, ',', 0],[47.0, 330, ',', 0],[41.0, 60, 'min', 0],[3.0, 340, ',', 0],[3.0, 60, 'min', 0],[26.0, 65.5, '%', 1],[41.0, 300, ',', 1],[47.0, 60, 'min', 1],[63.0, 10, '%', 1],[80.0, 330, ',', 1],[92.0, 14, '%', 1],[108.0, 300, ',', 1],[114.0, 90, 'min', 1]

C
###Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Panagiota Bougiatioti,Denis Dyck,Torsten Huebner,Karsten Rott,Jan-Michael Schmalhorst,Günter Reiss###
(443062, 443062)
 Simultaneously, the tunnelmagnetoresistance ratio shows a peak of 65.5% after being annealed atT<missing VAR>textrmann300,circC for 60 min, with a significant reduction downto 10% for higher annealing temperatures(T<missing VAR>textrmanngeq330,circC) and down to 14% for longer annealingtimes (T<missing VAR>textrmann300,circC for 90 min).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[199.0, 79.6, ',', 3],[189.0, 0.3, ',', 3],[176.0, 1.05, ',', 2],[137.0, 0.4, ',', 1],[131.0, 2, ',', 1],[123.0, 1.2, ',', 1],[91.0, 330, ',', 1],[85.0, 60, 'min', 1],[47.0, 340, ',', 1],[41.0, 60, 'min', 1],[18.0, 65.5, '%', 0],[3.0, 300, ',', 0],[3.0, 60, 'min', 0],[19.0, 10, '%', 0],[36.0, 330, ',', 0],[48.0, 14, '%', 0],[64.0, 300, ',', 0],[70.0, 90, 'min', 0]

C
###Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Panagiota Bougiatioti,Denis Dyck,Torsten Huebner,Karsten Rott,Jan-Michael Schmalhorst,Günter Reiss###
(443101, 443101)
 Simultaneously, the tunnelmagnetoresistance ratio shows a peak of 65.5% after being annealed atT<missing VAR>textrmann300,circC for 60 min, with a significant reduction downto 10% for higher annealing temperatures(T<missing VAR>textrmanngeq330,circC) and down to 14% for longer annealingtimes (T<missing VAR>textrmann300,circC for 90 min).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[238.0, 79.6, ',', 3],[228.0, 0.3, ',', 3],[215.0, 1.05, ',', 2],[176.0, 0.4, ',', 1],[170.0, 2, ',', 1],[162.0, 1.2, ',', 1],[130.0, 330, ',', 1],[124.0, 60, 'min', 1],[86.0, 340, ',', 1],[80.0, 60, 'min', 1],[57.0, 65.5, '%', 0],[42.0, 300, ',', 0],[36.0, 60, 'min', 0],[20.0, 10, '%', 0],[3.0, 330, ',', 0],[9.0, 14, '%', 0],[25.0, 300, ',', 0],[31.0, 90, 'min', 0]

C
###Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias|Orestis Manos,Panagiota Bougiatioti,Denis Dyck,Torsten Huebner,Karsten Rott,Jan-Michael Schmalhorst,Günter Reiss###
(443129, 443129)
 Simultaneously, the tunnelmagnetoresistance ratio shows a peak of 65.5% after being annealed atT<missing VAR>textrmann300,circC for 60 min, with a significant reduction downto 10% for higher annealing temperatures(T<missing VAR>textrmanngeq330,circC) and down to 14% for longer annealingtimes (T<missing VAR>textrmann300,circC for 90 min).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[266.0, 79.6, ',', 3],[256.0, 0.3, ',', 3],[243.0, 1.05, ',', 2],[204.0, 0.4, ',', 1],[198.0, 2, ',', 1],[190.0, 1.2, ',', 1],[158.0, 330, ',', 1],[152.0, 60, 'min', 1],[114.0, 340, ',', 1],[108.0, 60, 'min', 1],[85.0, 65.5, '%', 0],[70.0, 300, ',', 0],[64.0, 60, 'min', 0],[48.0, 10, '%', 0],[31.0, 330, ',', 0],[19.0, 14, '%', 0],[3.0, 300, ',', 0],[3.0, 90, 'min', 0]

BN
###One-dimensional ferromagnetic edge contacts to two-dimensional graphene/h-BN heterostructures|Bogdan Karpiak,André Dankert,Aron W. Cummings,Stephen R. Power,Stephan Roche,Saroj P. Dash###
(443205, 443206)
One-dimensional ferromagnetic edge contacts to two-dimensional graphene/h<missing VAR>-BN heterostructures.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 1, 'D', 2],[302.0, 100, 'mT', 4],[389.0, 2, 'D', 6],[397.0, 1, 'D', 6]

BN
###One-dimensional ferromagnetic edge contacts to two-dimensional graphene/h-BN heterostructures|Bogdan Karpiak,André Dankert,Aron W. Cummings,Stephen R. Power,Stephan Roche,Saroj P. Dash###
(443252, 443253)
 We report the fabrication of one-dimensional (1D) ferromagnetic edge contactsto two-dimensional (2D) graphene/h<missing VAR>-BN heterostructures.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 1, 'D', 1],[255.0, 100, 'mT', 3],[342.0, 2, 'D', 5],[350.0, 1, 'D', 5]

Pt
###Quantitative study of the spin Hall magnetoresistance in ferromagnetic insulator/normal metal hybrids|Matthias Althammer,Sibylle Meyer,Hiroyasu Nakayama,Michael Schreier,Stephan Altmannshofer,Mathias Weiler,Hans Huebl,Stephan Geprägs,Matthias Opel,Rudolf Gross,Daniel Meier,Christoph Klewe,Timo Kuschel,Jan-Michael Schmalhorst,Günter Reiss,Liming Shen,Arunava Gupta,Yan-Ting Chen,Gerrit E. W. Bauer,Eiji Saitoh,Sebastian T. B. Goennenwein###
(443854, 443854)
 Ittherefore should characteristically depend upon the orientation of themagnetization in the adjacent ferromagnet, and prevail even if an additional,nonferromagnetic metal layer is inserted between Pt and the ferromagnet.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 14, ';', 3]

Pt
###Quantitative study of the spin Hall magnetoresistance in ferromagnetic insulator/normal metal hybrids|Matthias Althammer,Sibylle Meyer,Hiroyasu Nakayama,Michael Schreier,Stephan Altmannshofer,Mathias Weiler,Hans Huebl,Stephan Geprägs,Matthias Opel,Rudolf Gross,Daniel Meier,Christoph Klewe,Timo Kuschel,Jan-Michael Schmalhorst,Günter Reiss,Liming Shen,Arunava Gupta,Yan-Ting Chen,Gerrit E. W. Bauer,Eiji Saitoh,Sebastian T. B. Goennenwein###
(443997, 443997)
 For a spin mixing conductanceof 4times1014;mathrmOmega-1m<missing VAR>-2 we obtain a spin Hall angle of0.11pm0.08 and a spin diffusion length of (1.5pm0.5);mathrmnm for Ptin our thin film samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 14, ';', 0]

S
###Supramolecular Spin Valves|Matias Urdampilleta,Svetlana Klyatskaya,Jean-Pierre Cleuziou,Mario Ruben,Wolfgang Wernsdorfer###
(444292, 444292)
 Recently, organic semiconductors were inserted into nanometersized tunnel junctions allowing enhancement of spin reversal, giantmagneto-resistance behaviour was observed in single non-magnetic moleculescoupled to magnetic electrodes, and the use of the quantum tunnellingproperties of single-molecule magnets (SM<missing VAR>Ms) in hybrid devices was proposed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 300, '%', 2],[190.0, 1, 'K', 2]

SWCN
###Supramolecular Spin Valves|Matias Urdampilleta,Svetlana Klyatskaya,Jean-Pierre Cleuziou,Mario Ruben,Wolfgang Wernsdorfer###
(444355, 444358)
Herein, we present an original device in which a non-magnetic molecular quantumdot, made of a single-wall carbon nanotube (SWCNT) contacted with non-magneticelectrodes, is laterally coupled via supramolecular interactions to a TbPc2-SMM(Pc  phthalocyanine), which provides a localized magnetic moment.
Featurization terminated normally.
0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 300, '%', 1],[124.0, 1, 'K', 1]

Tb
###Supramolecular Spin Valves|Matias Urdampilleta,Svetlana Klyatskaya,Jean-Pierre Cleuziou,Mario Ruben,Wolfgang Wernsdorfer###
(444390, 444390)
Herein, we present an original device in which a non-magnetic molecular quantumdot, made of a single-wall carbon nanotube (SWCNT) contacted with non-magneticelectrodes, is laterally coupled via supramolecular interactions to a TbPc2-SMM(Pc  phthalocyanine), which provides a localized magnetic moment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 300, '%', 1],[92.0, 1, 'K', 1]

S
###Supramolecular Spin Valves|Matias Urdampilleta,Svetlana Klyatskaya,Jean-Pierre Cleuziou,Mario Ruben,Wolfgang Wernsdorfer###
(444394, 444394)
Herein, we present an original device in which a non-magnetic molecular quantumdot, made of a single-wall carbon nanotube (SWCNT) contacted with non-magneticelectrodes, is laterally coupled via supramolecular interactions to a TbPc2-SMM(Pc  phthalocyanine), which provides a localized magnetic moment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 300, '%', 1],[88.0, 1, 'K', 1]

SWCN
###Supramolecular Spin Valves|Matias Urdampilleta,Svetlana Klyatskaya,Jean-Pierre Cleuziou,Mario Ruben,Wolfgang Wernsdorfer###
(444429, 444432)
 Theconductance through the SWCNT<missing VAR> is modulated by sweeping the magnetic field,exhibiting magnetoresistance ratios up to 300% between fully polarized andnon-polarized SM<missing VAR>Ms below 1 K.
Featurization terminated normally.
0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 300, '%', 0],[50.0, 1, 'K', 0]

S
###Supramolecular Spin Valves|Matias Urdampilleta,Svetlana Klyatskaya,Jean-Pierre Cleuziou,Mario Ruben,Wolfgang Wernsdorfer###
(444477, 444477)
 Theconductance through the SWCNT<missing VAR> is modulated by sweeping the magnetic field,exhibiting magnetoresistance ratios up to 300% between fully polarized andnon-polarized SM<missing VAR>Ms below 1 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 300, '%', 0],[5.0, 1, 'K', 0]

B
###Interlayer magnetoresistance in multilayer Dirac electron systems: motion and merging of Dirac cones|Mohamed Assili,Sonia Haddad###
(444940, 444940)
Our results may describe the behavior of the magnetotransport in the organicconductor alpha-(BEDT)2I3 at high pressure where the merging of Diraccones could be observed.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I3
###Interlayer magnetoresistance in multilayer Dirac electron systems: motion and merging of Dirac cones|Mohamed Assili,Sonia Haddad###
(444946, 444947)
Our results may describe the behavior of the magnetotransport in the organicconductor alpha-(BEDT)2I3 at high pressure where the merging of Diraccones could be observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Eu
###Cluster Altered Magnetic and Transport Properties in Eu Co-Doped Ge(1-x)Mn(x)Te|L. Kilanski,M. Górska,R. Szymczak,W. Dobrowolski,A. Podgórni,A. Avdonin,V. Domukhovski,V. E. Slynko,E. I. Slynko###
(444997, 444997)
Cluster Altered Magnetic and Transport Properties in Eu Co-Doped Ge(1-x)Mn(x)Te.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 0.092, 'and', 1],[72.0, 0.043, 'are', 1],[95.0, 160, 'K', 2],[169.0, 25, 'K', 4],[181.0, 25, '<', 4],[205.0, 2, '%', 4],[230.0, 25, 'K', 5],[343.0, 0.13, 'meV', 7],[346.0, 0.99, 'meV', 7]

Co
###Cluster Altered Magnetic and Transport Properties in Eu Co-Doped Ge(1-x)Mn(x)Te|L. Kilanski,M. Górska,R. Szymczak,W. Dobrowolski,A. Podgórni,A. Avdonin,V. Domukhovski,V. E. Slynko,E. I. Slynko###
(444999, 444999)
Cluster Altered Magnetic and Transport Properties in Eu Co-Doped Ge(1-x)Mn(x)Te.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 0.092, 'and', 1],[70.0, 0.043, 'are', 1],[93.0, 160, 'K', 2],[167.0, 25, 'K', 4],[179.0, 25, '<', 4],[203.0, 2, '%', 4],[228.0, 25, 'K', 5],[341.0, 0.13, 'meV', 7],[344.0, 0.99, 'meV', 7]

Mn
###Cluster Altered Magnetic and Transport Properties in Eu Co-Doped Ge(1-x)Mn(x)Te|L. Kilanski,M. Górska,R. Szymczak,W. Dobrowolski,A. Podgórni,A. Avdonin,V. Domukhovski,V. E. Slynko,E. I. Slynko###
(445009, 445009)
Cluster Altered Magnetic and Transport Properties in Eu Co-Doped Ge(1-x)Mn(x)Te.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 0.092, 'and', 1],[60.0, 0.043, 'are', 1],[83.0, 160, 'K', 2],[157.0, 25, 'K', 4],[169.0, 25, '<', 4],[193.0, 2, '%', 4],[218.0, 25, 'K', 5],[331.0, 0.13, 'meV', 7],[334.0, 0.99, 'meV', 7]

Te
###Cluster Altered Magnetic and Transport Properties in Eu Co-Doped Ge(1-x)Mn(x)Te|L. Kilanski,M. Górska,R. Szymczak,W. Dobrowolski,A. Podgórni,A. Avdonin,V. Domukhovski,V. E. Slynko,E. I. Slynko###
(445013, 445013)
Cluster Altered Magnetic and Transport Properties in Eu Co-Doped Ge(1-x)Mn(x)Te.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 0.092, 'and', 1],[56.0, 0.043, 'are', 1],[79.0, 160, 'K', 2],[153.0, 25, 'K', 4],[165.0, 25, '<', 4],[189.0, 2, '%', 4],[214.0, 25, 'K', 5],[327.0, 0.13, 'meV', 7],[330.0, 0.99, 'meV', 7]

Mn
###Cluster Altered Magnetic and Transport Properties in Eu Co-Doped Ge(1-x)Mn(x)Te|L. Kilanski,M. Górska,R. Szymczak,W. Dobrowolski,A. Podgórni,A. Avdonin,V. Domukhovski,V. E. Slynko,E. I. Slynko###
(445034, 445034)
 Magnetic and transport properties of Ge(1-x-y)Mn(x)Eu(y)Te crystals withchemical compositions 0.041 < x<missing VAR> < 0.092 and 0.010 < y<missing VAR> < 0.043 are studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 0.092, 'and', 0],[35.0, 0.043, 'are', 0],[58.0, 160, 'K', 1],[132.0, 25, 'K', 3],[144.0, 25, '<', 3],[168.0, 2, '%', 3],[193.0, 25, 'K', 4],[306.0, 0.13, 'meV', 6],[309.0, 0.99, 'meV', 6]

Eu
###Cluster Altered Magnetic and Transport Properties in Eu Co-Doped Ge(1-x)Mn(x)Te|L. Kilanski,M. Górska,R. Szymczak,W. Dobrowolski,A. Podgórni,A. Avdonin,V. Domukhovski,V. E. Slynko,E. I. Slynko###
(445038, 445038)
 Magnetic and transport properties of Ge(1-x-y)Mn(x)Eu(y)Te crystals withchemical compositions 0.041 < x<missing VAR> < 0.092 and 0.010 < y<missing VAR> < 0.043 are studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 0.092, 'and', 0],[31.0, 0.043, 'are', 0],[54.0, 160, 'K', 1],[128.0, 25, 'K', 3],[140.0, 25, '<', 3],[164.0, 2, '%', 3],[189.0, 25, 'K', 4],[302.0, 0.13, 'meV', 6],[305.0, 0.99, 'meV', 6]

Te
###Cluster Altered Magnetic and Transport Properties in Eu Co-Doped Ge(1-x)Mn(x)Te|L. Kilanski,M. Górska,R. Szymczak,W. Dobrowolski,A. Podgórni,A. Avdonin,V. Domukhovski,V. E. Slynko,E. I. Slynko###
(445042, 445042)
 Magnetic and transport properties of Ge(1-x-y)Mn(x)Eu(y)Te crystals withchemical compositions 0.041 < x<missing VAR> < 0.092 and 0.010 < y<missing VAR> < 0.043 are studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 0.092, 'and', 0],[27.0, 0.043, 'are', 0],[50.0, 160, 'K', 1],[124.0, 25, 'K', 3],[136.0, 25, '<', 3],[160.0, 2, '%', 3],[185.0, 25, 'K', 4],[298.0, 0.13, 'meV', 6],[301.0, 0.99, 'meV', 6]

K
###Cluster Altered Magnetic and Transport Properties in Eu Co-Doped Ge(1-x)Mn(x)Te|L. Kilanski,M. Górska,R. Szymczak,W. Dobrowolski,A. Podgórni,A. Avdonin,V. Domukhovski,V. E. Slynko,E. I. Slynko###
(445186, 445186)
 Magnetotransport studies showthe presence of both negative (at T<missing VAR> < 25 K) and linear positive (for 25<T<missing VAR> <200K) magnetoresistance effects (with amplitudes not exceeding 2%) in the studiedalloy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 0.092, 'and', 3],[117.0, 0.043, 'are', 3],[94.0, 160, 'K', 2],[20.0, 25, 'K', 0],[8.0, 25, '<', 0],[16.0, 2, '%', 0],[41.0, 25, 'K', 1],[154.0, 0.13, 'meV', 3],[157.0, 0.99, 'meV', 3]

P
###Cluster Altered Magnetic and Transport Properties in Eu Co-Doped Ge(1-x)Mn(x)Te|L. Kilanski,M. Górska,R. Szymczak,W. Dobrowolski,A. Podgórni,A. Avdonin,V. Domukhovski,V. E. Slynko,E. I. Slynko###
(445331, 445331)
 The productof the polarization constant and the inter-grain exchange constant, J<missing VAR>P, variesbetween about 0.13 meV and 0.99 meV.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[271.0, 0.092, 'and', 6],[262.0, 0.043, 'are', 6],[239.0, 160, 'K', 5],[165.0, 25, 'K', 3],[153.0, 25, '<', 3],[129.0, 2, '%', 3],[104.0, 25, 'K', 2],[9.0, 0.13, 'meV', 0],[12.0, 0.99, 'meV', 0]

H
###Cluster Altered Magnetic and Transport Properties in Eu Co-Doped Ge(1-x)Mn(x)Te|L. Kilanski,M. Górska,R. Szymczak,W. Dobrowolski,A. Podgórni,A. Avdonin,V. Domukhovski,V. E. Slynko,E. I. Slynko###
(445356, 445356)
 Strong anomalous Hall effect (AHE) isobserved for T<missing VAR> < T<missing VAR>C with coefficients R<missing VAR>S independent of temperature.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[296.0, 0.092, 'and', 7],[287.0, 0.043, 'are', 7],[264.0, 160, 'K', 6],[190.0, 25, 'K', 4],[178.0, 25, '<', 4],[154.0, 2, '%', 4],[129.0, 25, 'K', 3],[16.0, 0.13, 'meV', 1],[13.0, 0.99, 'meV', 1]

C
###Cluster Altered Magnetic and Transport Properties in Eu Co-Doped Ge(1-x)Mn(x)Te|L. Kilanski,M. Górska,R. Szymczak,W. Dobrowolski,A. Podgórni,A. Avdonin,V. Domukhovski,V. E. Slynko,E. I. Slynko###
(445372, 445372)
 Strong anomalous Hall effect (AHE) isobserved for T<missing VAR> < T<missing VAR>C with coefficients R<missing VAR>S independent of temperature.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[312.0, 0.092, 'and', 7],[303.0, 0.043, 'are', 7],[280.0, 160, 'K', 6],[206.0, 25, 'K', 4],[194.0, 25, '<', 4],[170.0, 2, '%', 4],[145.0, 25, 'K', 3],[32.0, 0.13, 'meV', 1],[29.0, 0.99, 'meV', 1]

S
###Cluster Altered Magnetic and Transport Properties in Eu Co-Doped Ge(1-x)Mn(x)Te|L. Kilanski,M. Górska,R. Szymczak,W. Dobrowolski,A. Podgórni,A. Avdonin,V. Domukhovski,V. E. Slynko,E. I. Slynko###
(445379, 445379)
 Strong anomalous Hall effect (AHE) isobserved for T<missing VAR> < T<missing VAR>C with coefficients R<missing VAR>S independent of temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[319.0, 0.092, 'and', 7],[310.0, 0.043, 'are', 7],[287.0, 160, 'K', 6],[213.0, 25, 'K', 4],[201.0, 25, '<', 4],[177.0, 2, '%', 4],[152.0, 25, 'K', 3],[39.0, 0.13, 'meV', 1],[36.0, 0.99, 'meV', 1]

H
###Cluster Altered Magnetic and Transport Properties in Eu Co-Doped Ge(1-x)Mn(x)Te|L. Kilanski,M. Górska,R. Szymczak,W. Dobrowolski,A. Podgórni,A. Avdonin,V. Domukhovski,V. E. Slynko,E. I. Slynko###
(445400, 445400)
 Thescaling analysis of the AHE<missing VAR> leads to a conclusion that this effect is due to askew scattering mechanism.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[340.0, 0.092, 'and', 8],[331.0, 0.043, 'are', 8],[308.0, 160, 'K', 7],[234.0, 25, 'K', 5],[222.0, 25, '<', 5],[198.0, 2, '%', 5],[173.0, 25, 'K', 4],[60.0, 0.13, 'meV', 2],[57.0, 0.99, 'meV', 2]

TaAs2
###Anomalous electronic structure and magnetoresistance in TaAs$_2$|Yongkang Luo,R. D. McDonald,P. F. S. Rosa,B. Scott,N. Wakeham,N. J. Ghimire,E. D. Bauer,J. D. Thompson,F. Ronning###
(445453, 445455)
Anomalous electronic structure and magnetoresistance in TaAs2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[244.0, -98, '%', 5],[255.0, 3, 'T', 5],[309.0, 0, ';', 6]

F
###Anomalous electronic structure and magnetoresistance in TaAs$_2$|Yongkang Luo,R. D. McDonald,P. F. S. Rosa,B. Scott,N. Wakeham,N. J. Ghimire,E. D. Bauer,J. D. Thompson,F. Ronning###
(445525, 445525)
 Some famous examples include the integer and fractionalquantum Hall effectsciteKlitzing-QHE,Tsui-FQHE, Shubnikov-de HaasoscillationsciteSdH, and weak localizationciteLee-WL<missing VAR> emphet al.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[174.0, -98, '%', 3],[185.0, 3, 'T', 3],[239.0, 0, ';', 4]

H
###Anomalous electronic structure and magnetoresistance in TaAs$_2$|Yongkang Luo,R. D. McDonald,P. F. S. Rosa,B. Scott,N. Wakeham,N. J. Ghimire,E. D. Bauer,J. D. Thompson,F. Ronning###
(445541, 445541)
 Some famous examples include the integer and fractionalquantum Hall effectsciteKlitzing-QHE,Tsui-FQHE, Shubnikov-de HaasoscillationsciteSdH, and weak localizationciteLee-WL<missing VAR> emphet al.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, -98, '%', 3],[169.0, 3, 'T', 3],[223.0, 0, ';', 4]

W
###Anomalous electronic structure and magnetoresistance in TaAs$_2$|Yongkang Luo,R. D. McDonald,P. F. S. Rosa,B. Scott,N. Wakeham,N. J. Ghimire,E. D. Bauer,J. D. Thompson,F. Ronning###
(445552, 445552)
 Some famous examples include the integer and fractionalquantum Hall effectsciteKlitzing-QHE,Tsui-FQHE, Shubnikov-de HaasoscillationsciteSdH, and weak localizationciteLee-WL<missing VAR> emphet al.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, -98, '%', 3],[158.0, 3, 'T', 3],[212.0, 0, ';', 4]

In
###Anomalous electronic structure and magnetoresistance in TaAs$_2$|Yongkang Luo,R. D. McDonald,P. F. S. Rosa,B. Scott,N. Wakeham,N. J. Ghimire,E. D. Bauer,J. D. Thompson,F. Ronning###
(445561, 445561)
 Innon-interacting metals the resistance typically increases upon the applicationof a magnetic fieldcitePippard-MR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, -98, '%', 2],[149.0, 3, 'T', 2],[203.0, 0, ';', 3]

In
###Anomalous electronic structure and magnetoresistance in TaAs$_2$|Yongkang Luo,R. D. McDonald,P. F. S. Rosa,B. Scott,N. Wakeham,N. J. Ghimire,E. D. Bauer,J. D. Thompson,F. Ronning###
(445599, 445599)
 In contrast, in some specialcircumstances metals, with anisotropic Fermi surfacesciteKikugawa-PdCoO2LMRor a so-called Weyl semimetal for instanceciteNielsen-ABJ<missing VAR>,Son-ChirAnom, mayhave negative magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, -98, '%', 1],[111.0, 3, 'T', 1],[165.0, 0, ';', 2]

PdCoO2
###Anomalous electronic structure and magnetoresistance in TaAs$_2$|Yongkang Luo,R. D. McDonald,P. F. S. Rosa,B. Scott,N. Wakeham,N. J. Ghimire,E. D. Bauer,J. D. Thompson,F. Ronning###
(445626, 445629)
 In contrast, in some specialcircumstances metals, with anisotropic Fermi surfacesciteKikugawa-PdCoO2LMRor a so-called Weyl semimetal for instanceciteNielsen-ABJ<missing VAR>,Son-ChirAnom, mayhave negative magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, -98, '%', 1],[81.0, 3, 'T', 1],[135.0, 0, ';', 2]

B
###Anomalous electronic structure and magnetoresistance in TaAs$_2$|Yongkang Luo,R. D. McDonald,P. F. S. Rosa,B. Scott,N. Wakeham,N. J. Ghimire,E. D. Bauer,J. D. Thompson,F. Ronning###
(445654, 445654)
 In contrast, in some specialcircumstances metals, with anisotropic Fermi surfacesciteKikugawa-PdCoO2LMRor a so-called Weyl semimetal for instanceciteNielsen-ABJ<missing VAR>,Son-ChirAnom, mayhave negative magnetoresistance.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, -98, '%', 1],[56.0, 3, 'T', 1],[110.0, 0, ';', 2]

TaAs2
###Anomalous electronic structure and magnetoresistance in TaAs$_2$|Yongkang Luo,R. D. McDonald,P. F. S. Rosa,B. Scott,N. Wakeham,N. J. Ghimire,E. D. Bauer,J. D. Thompson,F. Ronning###
(445683, 445685)
 Here we show that semimetallic TaAs2possesses a gigantic negative magnetoresistance (-98% in a field of 3 T atlow temperatures), with an unknown mechanism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, -98, '%', 0],[25.0, 3, 'T', 0],[79.0, 0, ';', 1]

TaAs2
###Anomalous electronic structure and magnetoresistance in TaAs$_2$|Yongkang Luo,R. D. McDonald,P. F. S. Rosa,B. Scott,N. Wakeham,N. J. Ghimire,E. D. Bauer,J. D. Thompson,F. Ronning###
(445741, 445743)
 Density functional calculationsillustrate that TaAs2 is a new topological semimetal [mathbbZ<missing VAR>2invariant (0;111)] without a Dirac dispersion.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, -98, '%', 1],[31.0, 3, 'T', 1],[21.0, 0, ';', 0]

OsGe2
###Anomalous electronic structure and magnetoresistance in TaAs$_2$|Yongkang Luo,R. D. McDonald,P. F. S. Rosa,B. Scott,N. Wakeham,N. J. Ghimire,E. D. Bauer,J. D. Thompson,F. Ronning###
(445849, 445851)
 Our results also imply that the OsGe2-type monoclinic dipnictidesare likely a material basis where unconventional topological semimetals may befound.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, -98, '%', 3],[139.0, 3, 'T', 3],[85.0, 0, ';', 2]

K
###Second order anisotropy contribution in perpendicular magnetic tunnel junctions|A. A. Timopheev,R. Sousa,M. Chshiev,T. Nguyen,B. Dieny###
(446032, 446032)
 By fitting the hard-axis magnetoresistanceloops to an analytical model, the effective anisotropy fields in both free andreference layers were derived and their variations in temperature range between340K and 5K were determined.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 50, 'to', 1],[68.0, 150, 'nm', 1],[3.0, 5, 'K', 0],[149.0, 0.1, 'and', 3],[150.0, 0.24, 'for', 3]

K2
###Second order anisotropy contribution in perpendicular magnetic tunnel junctions|A. A. Timopheev,R. Sousa,M. Chshiev,T. Nguyen,B. Dieny###
(446082, 446083)
 It is found that an accurate fitting is possibleonly if a second-order anisotropy term of the form -K2cos4theta, isadded to the fitting model.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 50, 'to', 2],[118.0, 150, 'nm', 2],[47.0, 5, 'K', 1],[98.0, 0.1, 'and', 2],[99.0, 0.24, 'for', 2]

K1
###Second order anisotropy contribution in perpendicular magnetic tunnel junctions|A. A. Timopheev,R. Sousa,M. Chshiev,T. Nguyen,B. Dieny###
(446156, 446157)
 This higher order contribution exists both in thefree and reference layers and its sign is opposite to that of the first orderanisotropy constant, K1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[193.0, 50, 'to', 3],[192.0, 150, 'nm', 3],[121.0, 5, 'K', 2],[24.0, 0.1, 'and', 1],[25.0, 0.24, 'for', 1]

At
###Second order anisotropy contribution in perpendicular magnetic tunnel junctions|A. A. Timopheev,R. Sousa,M. Chshiev,T. Nguyen,B. Dieny###
(446160, 446160)
 At room temperatures the estimated -K2/K1ratios are 0.1 and 0.24 for the free and reference layers, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[197.0, 50, 'to', 4],[196.0, 150, 'nm', 4],[125.0, 5, 'K', 3],[21.0, 0.1, 'and', 0],[22.0, 0.24, 'for', 0]

K2/K1
###Second order anisotropy contribution in perpendicular magnetic tunnel junctions|A. A. Timopheev,R. Sousa,M. Chshiev,T. Nguyen,B. Dieny###
(446171, 446175)
 At room temperatures the estimated -K2/K1ratios are 0.1 and 0.24 for the free and reference layers, respectively.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[208.0, 50, 'to', 4],[207.0, 150, 'nm', 4],[136.0, 5, 'K', 3],[6.0, 0.1, 'and', 0],[7.0, 0.24, 'for', 0]

FeCoB/MgO
###Second order anisotropy contribution in perpendicular magnetic tunnel junctions|A. A. Timopheev,R. Sousa,M. Chshiev,T. Nguyen,B. Dieny###
(446333, 446338)
 The existence of this higher order anisotropy was confirmedexperimentally on FeCoB/MgO sheet films by ferromagnetic resonance technique.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[370.0, 50, 'to', 8],[369.0, 150, 'nm', 8],[298.0, 5, 'K', 7],[152.0, 0.1, 'and', 4],[151.0, 0.24, 'for', 4]

FeCoB/MgO
###Second order anisotropy contribution in perpendicular magnetic tunnel junctions|A. A. Timopheev,R. Sousa,M. Chshiev,T. Nguyen,B. Dieny###
(446401, 446406)
It is of interfacial nature and is believed to be linked to spatialfluctuations at the nanoscale of the anisotropy parameter at the FeCoB/MgOinterface, in agreement with Dieny-Vedyayev model.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[438.0, 50, 'to', 9],[437.0, 150, 'nm', 9],[366.0, 5, 'K', 8],[220.0, 0.1, 'and', 5],[219.0, 0.24, 'for', 5]

Ge/Si
###Universal behavior of magnetoresistance in quantum dot arrays with different degree of disorder|N. P. Stepina,E. S. Koptev,A. G. Pogosov,A. V. Dvurechenskii,A. I. Nikiforov,E. Yu. Zhdanov,Y. M. Galperin###
(446472, 446474)
 Magnetoresistance in two-dimensional array of Ge/Si quantum dots was studiedin a wide range of zero-magnetic field conductances, where the transport regimechanges from hopping to diffusive one.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

W
###Universal behavior of magnetoresistance in quantum dot arrays with different degree of disorder|N. P. Stepina,E. S. Koptev,A. G. Pogosov,A. V. Dvurechenskii,A. I. Nikiforov,E. Yu. Zhdanov,Y. M. Galperin###
(446798, 446798)
 Taking into account WL<missing VAR> insideclusters and hopping between them within the effective medium approximation weextract effective parameters characterizing charge (magneto) transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NS
###Spin-dependent conductivity of iron-based superconductors in a magnetic field|M. O. Dzyuba,Yu. N. Chiang,D. A. Chareev,A. N. Vasiliev###
(446910, 446911)
 We report the results of a study of magnetic field features of electrontransport in heterojunctions with NS boundary inside iron-basedsuperconductors, represented by a binary phase of alpha - FeSe andoxyarsenide pnictide LaO(F)FeAs.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 1, 'to', 1],[144.0, 0, 'within', 1]

FeSe
###Spin-dependent conductivity of iron-based superconductors in a magnetic field|M. O. Dzyuba,Yu. N. Chiang,D. A. Chareev,A. N. Vasiliev###
(446941, 446942)
 We report the results of a study of magnetic field features of electrontransport in heterojunctions with NS boundary inside iron-basedsuperconductors, represented by a binary phase of alpha - FeSe andoxyarsenide pnictide LaO(F)FeAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 1, 'to', 1],[113.0, 0, 'within', 1]

LaO(F)FeAs
###Spin-dependent conductivity of iron-based superconductors in a magnetic field|M. O. Dzyuba,Yu. N. Chiang,D. A. Chareev,A. N. Vasiliev###
(446951, 446957)
 We report the results of a study of magnetic field features of electrontransport in heterojunctions with NS boundary inside iron-basedsuperconductors, represented by a binary phase of alpha - FeSe andoxyarsenide pnictide LaO(F)FeAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0.2,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 1, 'to', 1],[98.0, 0, 'within', 1]

NS
###Spin-dependent conductivity of iron-based superconductors in a magnetic field|M. O. Dzyuba,Yu. N. Chiang,D. A. Chareev,A. N. Vasiliev###
(447016, 447017)
 We used the ability of self magnetic field ofthe transport current to partially destroy superconductivity, no matter how lowthe field may be, in the NS interface area, where, due to the proximity effect,the superconducting order parameter, Delta, disperses from 1 to 0 within thescale of the Ginzburg-Landau coherence length.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 1, 'to', 0],[38.0, 0, 'within', 0]

V
###Spin-dependent conductivity of iron-based superconductors in a magnetic field|M. O. Dzyuba,Yu. N. Chiang,D. A. Chareev,A. N. Vasiliev###
(447192, 447192)
 The following features oftransport were found(i) at T<Tc, magnetoresistance in systems withdifferent superconductors has different sign;(ii) sign and magnitude of themagnetoresistance depend on the magnitude of current and temperature, and (iii)in all operating modes where the contribution from Andreev reflection issuppressed ((T<missing VAR>  e<missing VAR>V) gtrsim Delta),the hysteresis of the magnetoresistanceis present.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 1, 'to', 1],[137.0, 0, 'within', 1]

Pt/CoFe2O4
###Spin Hall magnetoresistance as a probe for surface magnetization in Pt/CoFe$_2$O$_4$ bilayers|Miren Isasa,Saül Vélez,Edurne Sagasta,Amilcar Bedoya-Pinto,Nico Dix,Florencio Sánchez,Luis E. Hueso,Josep Fontcuberta,Fèlix Casanova###
(447367, 447373)
Spin Hall magnetoresistance as a probe for surface magnetization in Pt/CoFe2O4 bilayers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

S
###Spin Hall magnetoresistance as a probe for surface magnetization in Pt/CoFe$_2$O$_4$ bilayers|Miren Isasa,Saül Vélez,Edurne Sagasta,Amilcar Bedoya-Pinto,Nico Dix,Florencio Sánchez,Luis E. Hueso,Josep Fontcuberta,Fèlix Casanova###
(447391, 447391)
 We study the spin Hall magnetoresistance (SMR) in Pt grown textitin situon CoFe2O4 (CFO) ferrimagnetic insulating (FM<missing VAR>I) films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Spin Hall magnetoresistance as a probe for surface magnetization in Pt/CoFe$_2$O$_4$ bilayers|Miren Isasa,Saül Vélez,Edurne Sagasta,Amilcar Bedoya-Pinto,Nico Dix,Florencio Sánchez,Luis E. Hueso,Josep Fontcuberta,Fèlix Casanova###
(447398, 447398)
 We study the spin Hall magnetoresistance (SMR) in Pt grown textitin situon CoFe2O4 (CFO) ferrimagnetic insulating (FM<missing VAR>I) films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFe2O4
###Spin Hall magnetoresistance as a probe for surface magnetization in Pt/CoFe$_2$O$_4$ bilayers|Miren Isasa,Saül Vélez,Edurne Sagasta,Amilcar Bedoya-Pinto,Nico Dix,Florencio Sánchez,Luis E. Hueso,Josep Fontcuberta,Fèlix Casanova###
(447410, 447414)
 We study the spin Hall magnetoresistance (SMR) in Pt grown textitin situon CoFe2O4 (CFO) ferrimagnetic insulating (FM<missing VAR>I) films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(CFO)
###Spin Hall magnetoresistance as a probe for surface magnetization in Pt/CoFe$_2$O$_4$ bilayers|Miren Isasa,Saül Vélez,Edurne Sagasta,Amilcar Bedoya-Pinto,Nico Dix,Florencio Sánchez,Luis E. Hueso,Josep Fontcuberta,Fèlix Casanova###
(447416, 447420)
 We study the spin Hall magnetoresistance (SMR) in Pt grown textitin situon CoFe2O4 (CFO) ferrimagnetic insulating (FM<missing VAR>I) films.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Spin Hall magnetoresistance as a probe for surface magnetization in Pt/CoFe$_2$O$_4$ bilayers|Miren Isasa,Saül Vélez,Edurne Sagasta,Amilcar Bedoya-Pinto,Nico Dix,Florencio Sánchez,Luis E. Hueso,Josep Fontcuberta,Fèlix Casanova###
(447427, 447427)
 We study the spin Hall magnetoresistance (SMR) in Pt grown textitin situon CoFe2O4 (CFO) ferrimagnetic insulating (FM<missing VAR>I) films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Spin Hall magnetoresistance as a probe for surface magnetization in Pt/CoFe$_2$O$_4$ bilayers|Miren Isasa,Saül Vélez,Edurne Sagasta,Amilcar Bedoya-Pinto,Nico Dix,Florencio Sánchez,Luis E. Hueso,Josep Fontcuberta,Fèlix Casanova###
(447429, 447429)
 We study the spin Hall magnetoresistance (SMR) in Pt grown textitin situon CoFe2O4 (CFO) ferrimagnetic insulating (FM<missing VAR>I) films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin Hall magnetoresistance as a probe for surface magnetization in Pt/CoFe$_2$O$_4$ bilayers|Miren Isasa,Saül Vélez,Edurne Sagasta,Amilcar Bedoya-Pinto,Nico Dix,Florencio Sánchez,Luis E. Hueso,Josep Fontcuberta,Fèlix Casanova###
(447467, 447467)
 A careful analysisof the angle-dependent and field-dependent longitudinal magnetoresistanceindicates that the SMR contains a contribution that does not follow the bulkmagnetization of CFO but it is a fingerprint of the complex magnetism at thesurface of the CFO layer, thus signaling SMR as a tool for mapping surfacemagnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CFO
###Spin Hall magnetoresistance as a probe for surface magnetization in Pt/CoFe$_2$O$_4$ bilayers|Miren Isasa,Saül Vélez,Edurne Sagasta,Amilcar Bedoya-Pinto,Nico Dix,Florencio Sánchez,Luis E. Hueso,Josep Fontcuberta,Fèlix Casanova###
(447494, 447496)
 A careful analysisof the angle-dependent and field-dependent longitudinal magnetoresistanceindicates that the SMR contains a contribution that does not follow the bulkmagnetization of CFO but it is a fingerprint of the complex magnetism at thesurface of the CFO layer, thus signaling SMR as a tool for mapping surfacemagnetization.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CFO
###Spin Hall magnetoresistance as a probe for surface magnetization in Pt/CoFe$_2$O$_4$ bilayers|Miren Isasa,Saül Vélez,Edurne Sagasta,Amilcar Bedoya-Pinto,Nico Dix,Florencio Sánchez,Luis E. Hueso,Josep Fontcuberta,Fèlix Casanova###
(447527, 447529)
 A careful analysisof the angle-dependent and field-dependent longitudinal magnetoresistanceindicates that the SMR contains a contribution that does not follow the bulkmagnetization of CFO but it is a fingerprint of the complex magnetism at thesurface of the CFO layer, thus signaling SMR as a tool for mapping surfacemagnetization.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin Hall magnetoresistance as a probe for surface magnetization in Pt/CoFe$_2$O$_4$ bilayers|Miren Isasa,Saül Vélez,Edurne Sagasta,Amilcar Bedoya-Pinto,Nico Dix,Florencio Sánchez,Luis E. Hueso,Josep Fontcuberta,Fèlix Casanova###
(447538, 447538)
 A careful analysisof the angle-dependent and field-dependent longitudinal magnetoresistanceindicates that the SMR contains a contribution that does not follow the bulkmagnetization of CFO but it is a fingerprint of the complex magnetism at thesurface of the CFO layer, thus signaling SMR as a tool for mapping surfacemagnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin Hall magnetoresistance as a probe for surface magnetization in Pt/CoFe$_2$O$_4$ bilayers|Miren Isasa,Saül Vélez,Edurne Sagasta,Amilcar Bedoya-Pinto,Nico Dix,Florencio Sánchez,Luis E. Hueso,Josep Fontcuberta,Fèlix Casanova###
(447568, 447568)
 A systematic study of the SMR for different temperatures and CFOthicknesses gives us information impossible to obtain with any standardmagnetometry technique.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CFO
###Spin Hall magnetoresistance as a probe for surface magnetization in Pt/CoFe$_2$O$_4$ bilayers|Miren Isasa,Saül Vélez,Edurne Sagasta,Amilcar Bedoya-Pinto,Nico Dix,Florencio Sánchez,Luis E. Hueso,Josep Fontcuberta,Fèlix Casanova###
(447580, 447582)
 A systematic study of the SMR for different temperatures and CFOthicknesses gives us information impossible to obtain with any standardmagnetometry technique.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CFO
###Spin Hall magnetoresistance as a probe for surface magnetization in Pt/CoFe$_2$O$_4$ bilayers|Miren Isasa,Saül Vélez,Edurne Sagasta,Amilcar Bedoya-Pinto,Nico Dix,Florencio Sánchez,Luis E. Hueso,Josep Fontcuberta,Fèlix Casanova###
(447631, 447633)
 On one hand, surface magnetization behavesindependently of the CFO thickness and does not saturate up to high fields,evidencing that the surface has its own anisotropy.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin Hall magnetoresistance as a probe for surface magnetization in Pt/CoFe$_2$O$_4$ bilayers|Miren Isasa,Saül Vélez,Edurne Sagasta,Amilcar Bedoya-Pinto,Nico Dix,Florencio Sánchez,Luis E. Hueso,Josep Fontcuberta,Fèlix Casanova###
(447746, 447746)
 In addition, acontribution from ordinary magnetoresistance of Pt is identified, which is onlydistinguishable due to the low resistivity of the textitin-situ grown Pt.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Spin Hall magnetoresistance as a probe for surface magnetization in Pt/CoFe$_2$O$_4$ bilayers|Miren Isasa,Saül Vélez,Edurne Sagasta,Amilcar Bedoya-Pinto,Nico Dix,Florencio Sánchez,Luis E. Hueso,Josep Fontcuberta,Fèlix Casanova###
(447764, 447764)
 In addition, acontribution from ordinary magnetoresistance of Pt is identified, which is onlydistinguishable due to the low resistivity of the textitin-situ grown Pt.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Spin Hall magnetoresistance as a probe for surface magnetization in Pt/CoFe$_2$O$_4$ bilayers|Miren Isasa,Saül Vélez,Edurne Sagasta,Amilcar Bedoya-Pinto,Nico Dix,Florencio Sánchez,Luis E. Hueso,Josep Fontcuberta,Fèlix Casanova###
(447801, 447801)
 In addition, acontribution from ordinary magnetoresistance of Pt is identified, which is onlydistinguishable due to the low resistivity of the textitin-situ grown Pt.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Suppression of magnetoresistance in thin $WTe_2$ flakes by surface oxidation|J. M. Woods,J. Shen,P. Kumaravadivel,Y. Pang,Y. Xie,G. A. Pan,M. Li,E. I. Altman,L. Lu,J. J. Cha###
(447822, 447824)
Suppression of magnetoresistance in thin WTe2 flakes by surface oxidation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[320.0, 300, 'meV', 7],[397.0, 13, 'nm', 8],[464.0, 2, 'D', 9]

WTe2
###Suppression of magnetoresistance in thin $WTe_2$ flakes by surface oxidation|J. M. Woods,J. Shen,P. Kumaravadivel,Y. Pang,Y. Xie,G. A. Pan,M. Li,E. I. Altman,L. Lu,J. J. Cha###
(447932, 447934)
 Here,using semimetallic WTe2 that exhibits large magnetoresistance, we show thatsurface oxidation and Fermi level pinning degrade the transport properties ofthin WTe2 flakes significantly.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[210.0, 300, 'meV', 4],[287.0, 13, 'nm', 5],[354.0, 2, 'D', 6]

WTe2
###Suppression of magnetoresistance in thin $WTe_2$ flakes by surface oxidation|J. M. Woods,J. Shen,P. Kumaravadivel,Y. Pang,Y. Xie,G. A. Pan,M. Li,E. I. Altman,L. Lu,J. J. Cha###
(447977, 447979)
 Here,using semimetallic WTe2 that exhibits large magnetoresistance, we show thatsurface oxidation and Fermi level pinning degrade the transport properties ofthin WTe2 flakes significantly.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 300, 'meV', 4],[242.0, 13, 'nm', 5],[309.0, 2, 'D', 6]

WTe2
###Suppression of magnetoresistance in thin $WTe_2$ flakes by surface oxidation|J. M. Woods,J. Shen,P. Kumaravadivel,Y. Pang,Y. Xie,G. A. Pan,M. Li,E. I. Altman,L. Lu,J. J. Cha###
(447990, 447992)
 With decreasing WTe2 flake thickness, weobserve a dramatic suppression of the large magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 300, 'meV', 3],[229.0, 13, 'nm', 4],[296.0, 2, 'D', 5]

WTe2
###Suppression of magnetoresistance in thin $WTe_2$ flakes by surface oxidation|J. M. Woods,J. Shen,P. Kumaravadivel,Y. Pang,Y. Xie,G. A. Pan,M. Li,E. I. Altman,L. Lu,J. J. Cha###
(448150, 448152)
 The oxidelayer also shifts the Fermi level by  300 meV at the WTe2 surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 300, 'meV', 0],[69.0, 13, 'nm', 1],[136.0, 2, 'D', 2]

Bi2Se2.1Te0.9
###Weak antilocalization effect due to topological surface states in Bi$_2$Se$_{2.1}$Te$_{0.9}$|K. Shrestha,D. Graf,V. Marinova,B. Lorenz,C. W. Chu###
(448319, 448324)
Weak antilocalization effect due to topological surface states in Bi2Se2.1Te0.9.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42000000000000004,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[283.0, 1900, '%', 6],[295.0, 35, 'T', 6]

W
###Weak antilocalization effect due to topological surface states in Bi$_2$Se$_{2.1}$Te$_{0.9}$|K. Shrestha,D. Graf,V. Marinova,B. Lorenz,C. W. Chu###
(448340, 448340)
 We have investigated the weak antilocalization (WAL) effect in the p<missing VAR>-typeBi2Se2.1Te0.9 topological system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[267.0, 1900, '%', 5],[279.0, 35, 'T', 5]

Bi2Se2.1Te0.9
###Weak antilocalization effect due to topological surface states in Bi$_2$Se$_{2.1}$Te$_{0.9}$|K. Shrestha,D. Graf,V. Marinova,B. Lorenz,C. W. Chu###
(448356, 448361)
 We have investigated the weak antilocalization (WAL) effect in the p<missing VAR>-typeBi2Se2.1Te0.9 topological system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42000000000000004,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[246.0, 1900, '%', 5],[258.0, 35, 'T', 5]

W
###Weak antilocalization effect due to topological surface states in Bi$_2$Se$_{2.1}$Te$_{0.9}$|K. Shrestha,D. Graf,V. Marinova,B. Lorenz,C. W. Chu###
(448402, 448402)
 The magnetoconductance shows acusp-like feature at low magnetic fields, indicating the presence of the WAL<missing VAR>effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, 1900, '%', 4],[217.0, 35, 'T', 4]

W
###Weak antilocalization effect due to topological surface states in Bi$_2$Se$_{2.1}$Te$_{0.9}$|K. Shrestha,D. Graf,V. Marinova,B. Lorenz,C. W. Chu###
(448412, 448412)
 The WAL<missing VAR> curves measured at different tilt angles merge together whenthey are plotted as a function of the normal field components, showing thatsurface states dominate the magnetoconductance in theBi2Se2.1Te0.9 crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[195.0, 1900, '%', 3],[207.0, 35, 'T', 3]

Bi2Se2.1Te0.9
###Weak antilocalization effect due to topological surface states in Bi$_2$Se$_{2.1}$Te$_{0.9}$|K. Shrestha,D. Graf,V. Marinova,B. Lorenz,C. W. Chu###
(448478, 448483)
 The WAL<missing VAR> curves measured at different tilt angles merge together whenthey are plotted as a function of the normal field components, showing thatsurface states dominate the magnetoconductance in theBi2Se2.1Te0.9 crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42000000000000004,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 1900, '%', 3],[136.0, 35, 'T', 3]

W
###Weak antilocalization effect due to topological surface states in Bi$_2$Se$_{2.1}$Te$_{0.9}$|K. Shrestha,D. Graf,V. Marinova,B. Lorenz,C. W. Chu###
(448534, 448534)
 We have calculated magnetoconductance perconduction channel and applied the Hikami-Larkin-Nagaoka formula to determinethe physical parameters that characterize the WAL<missing VAR> effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 1900, '%', 2],[85.0, 35, 'T', 2]

K
###Weak antilocalization effect due to topological surface states in Bi$_2$Se$_{2.1}$Te$_{0.9}$|K. Shrestha,D. Graf,V. Marinova,B. Lorenz,C. W. Chu###
(448580, 448580)
 The number ofconduction channels and the phase coherence length do not change withtemperature up to T<missing VAR>5 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 1900, '%', 1],[39.0, 35, 'T', 1]

In
###Weak antilocalization effect due to topological surface states in Bi$_2$Se$_{2.1}$Te$_{0.9}$|K. Shrestha,D. Graf,V. Marinova,B. Lorenz,C. W. Chu###
(448583, 448583)
 In addition, the sample shows a large positivemagnetoresistance that reaches 1900% under a magnetic field of 35 T at T<missing VAR>0.33Kwith no sign of saturation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 1900, '%', 0],[36.0, 35, 'T', 0]

K
###Weak antilocalization effect due to topological surface states in Bi$_2$Se$_{2.1}$Te$_{0.9}$|K. Shrestha,D. Graf,V. Marinova,B. Lorenz,C. W. Chu###
(448625, 448625)
 In addition, the sample shows a large positivemagnetoresistance that reaches 1900% under a magnetic field of 35 T at T<missing VAR>0.33Kwith no sign of saturation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 1900, '%', 0],[6.0, 35, 'T', 0]

LaAlO3/SrTiO3
###Magnetoresistance in the superconducting state at the (111) LaAlO$_3$/SrTiO$_3$ interface|S. Davis,Z. Huang,K. Han,Ariando,T. Venkatesan,V. Chandrasekhar###
(448748, 448756)
Magnetoresistance in the superconducting state at the (111) LaAlO3/SrTiO3 interface.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

In
###Magnetoresistance in the superconducting state at the (111) LaAlO$_3$/SrTiO$_3$ interface|S. Davis,Z. Huang,K. Han,Ariando,T. Venkatesan,V. Chandrasekhar###
(448810, 448810)
 In materials in whichsuperconductivity and magnetic order is known to coexist (such as someheavy-fermion materials), the superconductivity is thought to be of anunconventional nature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaAlO3
###Magnetoresistance in the superconducting state at the (111) LaAlO$_3$/SrTiO$_3$ interface|S. Davis,Z. Huang,K. Han,Ariando,T. Venkatesan,V. Chandrasekhar###
(448903, 448906)
 Recently, the conducting gas that lives at the interfacebetween the perovskite band insulators LaAlO3 (L<missing VAR>AO) and SrTiO3 (ST<missing VAR>O) hasalso been shown to host both superconductivity and magnetism.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Magnetoresistance in the superconducting state at the (111) LaAlO$_3$/SrTiO$_3$ interface|S. Davis,Z. Huang,K. Han,Ariando,T. Venkatesan,V. Chandrasekhar###
(448911, 448911)
 Recently, the conducting gas that lives at the interfacebetween the perovskite band insulators LaAlO3 (L<missing VAR>AO) and SrTiO3 (ST<missing VAR>O) hasalso been shown to host both superconductivity and magnetism.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Magnetoresistance in the superconducting state at the (111) LaAlO$_3$/SrTiO$_3$ interface|S. Davis,Z. Huang,K. Han,Ariando,T. Venkatesan,V. Chandrasekhar###
(448916, 448919)
 Recently, the conducting gas that lives at the interfacebetween the perovskite band insulators LaAlO3 (L<missing VAR>AO) and SrTiO3 (ST<missing VAR>O) hasalso been shown to host both superconductivity and magnetism.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Magnetoresistance in the superconducting state at the (111) LaAlO$_3$/SrTiO$_3$ interface|S. Davis,Z. Huang,K. Han,Ariando,T. Venkatesan,V. Chandrasekhar###
(448922, 448922)
 Recently, the conducting gas that lives at the interfacebetween the perovskite band insulators LaAlO3 (L<missing VAR>AO) and SrTiO3 (ST<missing VAR>O) hasalso been shown to host both superconductivity and magnetism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Magnetoresistance in the superconducting state at the (111) LaAlO$_3$/SrTiO$_3$ interface|S. Davis,Z. Huang,K. Han,Ariando,T. Venkatesan,V. Chandrasekhar###
(448924, 448924)
 Recently, the conducting gas that lives at the interfacebetween the perovskite band insulators LaAlO3 (L<missing VAR>AO) and SrTiO3 (ST<missing VAR>O) hasalso been shown to host both superconductivity and magnetism.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O/S
###Magnetoresistance in the superconducting state at the (111) LaAlO$_3$/SrTiO$_3$ interface|S. Davis,Z. Huang,K. Han,Ariando,T. Venkatesan,V. Chandrasekhar###
(448964, 448966)
 Most previousresearch has focused on L<missing VAR>AO/ST<missing VAR>O samples in which the interface is in the (001)crystal plane.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

O
###Magnetoresistance in the superconducting state at the (111) LaAlO$_3$/SrTiO$_3$ interface|S. Davis,Z. Huang,K. Han,Ariando,T. Venkatesan,V. Chandrasekhar###
(448968, 448968)
 Most previousresearch has focused on L<missing VAR>AO/ST<missing VAR>O samples in which the interface is in the (001)crystal plane.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O/S
###Magnetoresistance in the superconducting state at the (111) LaAlO$_3$/SrTiO$_3$ interface|S. Davis,Z. Huang,K. Han,Ariando,T. Venkatesan,V. Chandrasekhar###
(449092, 449094)
 Here we report measurements ofthe magnetoresistance of (111) L<missing VAR>AO/ST<missing VAR>O heterostructures at temperatures atwhich they are also superconducting.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

O
###Magnetoresistance in the superconducting state at the (111) LaAlO$_3$/SrTiO$_3$ interface|S. Davis,Z. Huang,K. Han,Ariando,T. Venkatesan,V. Chandrasekhar###
(449096, 449096)
 Here we report measurements ofthe magnetoresistance of (111) L<missing VAR>AO/ST<missing VAR>O heterostructures at temperatures atwhich they are also superconducting.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Magnetoresistance in the superconducting state at the (111) LaAlO$_3$/SrTiO$_3$ interface|S. Davis,Z. Huang,K. Han,Ariando,T. Venkatesan,V. Chandrasekhar###
(449118, 449118)
 As with the (001) structures, themagnetoresistance is hysteretic, indicating the coexistence of magnetism andsuperconductivity, but in addition, we find that this magnetoresistance isanisotropic.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O/S
###Magnetoresistance in the superconducting state at the (111) LaAlO$_3$/SrTiO$_3$ interface|S. Davis,Z. Huang,K. Han,Ariando,T. Venkatesan,V. Chandrasekhar###
(449216, 449218)
 Such an anisotropic response is completely unexpected in thesuperconducting state, and suggests that (111) L<missing VAR>AO/ST<missing VAR>O heterostructures maysupport unconventional superconductivity.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

O
###Magnetoresistance in the superconducting state at the (111) LaAlO$_3$/SrTiO$_3$ interface|S. Davis,Z. Huang,K. Han,Ariando,T. Venkatesan,V. Chandrasekhar###
(449220, 449220)
 Such an anisotropic response is completely unexpected in thesuperconducting state, and suggests that (111) L<missing VAR>AO/ST<missing VAR>O heterostructures maysupport unconventional superconductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt/Co
###Anomalous spin Hall magnetoresistance in Pt/Co bilayers|Masashi Kawaguchi,Daiki Towa,Yong-Chang Lau,Saburo Takahashi,Masamitsu Hayashi###
(449252, 449254)
Anomalous spin Hall magnetoresistance in Pt/Co bilayers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

S
###Anomalous spin Hall magnetoresistance in Pt/Co bilayers|Masashi Kawaguchi,Daiki Towa,Yong-Chang Lau,Saburo Takahashi,Masamitsu Hayashi###
(449274, 449274)
 We have studied the spin Hall magnetoresistance (SMR), the magnetoresistancewithin the plane transverse to the current flow, of Pt/Co bilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt/Co
###Anomalous spin Hall magnetoresistance in Pt/Co bilayers|Masashi Kawaguchi,Daiki Towa,Yong-Chang Lau,Saburo Takahashi,Masamitsu Hayashi###
(449304, 449306)
 We have studied the spin Hall magnetoresistance (SMR), the magnetoresistancewithin the plane transverse to the current flow, of Pt/Co bilayers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

S
###Anomalous spin Hall magnetoresistance in Pt/Co bilayers|Masashi Kawaguchi,Daiki Towa,Yong-Chang Lau,Saburo Takahashi,Masamitsu Hayashi###
(449320, 449320)
 We findthat the SMR increases with increasing Co thickness the effective spin Hallangle for bilayers with thick Co exceeds the reported values of Pt when aconventional drift-diffusion model is used.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Anomalous spin Hall magnetoresistance in Pt/Co bilayers|Masashi Kawaguchi,Daiki Towa,Yong-Chang Lau,Saburo Takahashi,Masamitsu Hayashi###
(449330, 449330)
 We findthat the SMR increases with increasing Co thickness the effective spin Hallangle for bilayers with thick Co exceeds the reported values of Pt when aconventional drift-diffusion model is used.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Anomalous spin Hall magnetoresistance in Pt/Co bilayers|Masashi Kawaguchi,Daiki Towa,Yong-Chang Lau,Saburo Takahashi,Masamitsu Hayashi###
(449353, 449353)
 We findthat the SMR increases with increasing Co thickness the effective spin Hallangle for bilayers with thick Co exceeds the reported values of Pt when aconventional drift-diffusion model is used.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Anomalous spin Hall magnetoresistance in Pt/Co bilayers|Masashi Kawaguchi,Daiki Towa,Yong-Chang Lau,Saburo Takahashi,Masamitsu Hayashi###
(449365, 449365)
 We findthat the SMR increases with increasing Co thickness the effective spin Hallangle for bilayers with thick Co exceeds the reported values of Pt when aconventional drift-diffusion model is used.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Anomalous spin Hall magnetoresistance in Pt/Co bilayers|Masashi Kawaguchi,Daiki Towa,Yong-Chang Lau,Saburo Takahashi,Masamitsu Hayashi###
(449402, 449402)
 An extended model including spintransport within the Co layer cannot account for the large SMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Anomalous spin Hall magnetoresistance in Pt/Co bilayers|Masashi Kawaguchi,Daiki Towa,Yong-Chang Lau,Saburo Takahashi,Masamitsu Hayashi###
(449416, 449416)
 An extended model including spintransport within the Co layer cannot account for the large SMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Anomalous spin Hall magnetoresistance in Pt/Co bilayers|Masashi Kawaguchi,Daiki Towa,Yong-Chang Lau,Saburo Takahashi,Masamitsu Hayashi###
(449454, 449454)
 For most bilayers, theSMR increases with decreasing temperature and increasing magnetic field,indicating that magnon-related effects in the Co layer play little role.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Anomalous spin Hall magnetoresistance in Pt/Co bilayers|Masashi Kawaguchi,Daiki Towa,Yong-Chang Lau,Saburo Takahashi,Masamitsu Hayashi###
(449490, 449490)
 For most bilayers, theSMR increases with decreasing temperature and increasing magnetic field,indicating that magnon-related effects in the Co layer play little role.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Anomalous spin Hall magnetoresistance in Pt/Co bilayers|Masashi Kawaguchi,Daiki Towa,Yong-Chang Lau,Saburo Takahashi,Masamitsu Hayashi###
(449506, 449506)
Without the Pt layer, we do not observe the large SMR found for the Pt/Cobilayers with thick Co.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Anomalous spin Hall magnetoresistance in Pt/Co bilayers|Masashi Kawaguchi,Daiki Towa,Yong-Chang Lau,Saburo Takahashi,Masamitsu Hayashi###
(449523, 449523)
Without the Pt layer, we do not observe the large SMR found for the Pt/Cobilayers with thick Co.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt/Co
###Anomalous spin Hall magnetoresistance in Pt/Co bilayers|Masashi Kawaguchi,Daiki Towa,Yong-Chang Lau,Saburo Takahashi,Masamitsu Hayashi###
(449533, 449535)
Without the Pt layer, we do not observe the large SMR found for the Pt/Cobilayers with thick Co.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Co
###Anomalous spin Hall magnetoresistance in Pt/Co bilayers|Masashi Kawaguchi,Daiki Towa,Yong-Chang Lau,Saburo Takahashi,Masamitsu Hayashi###
(449544, 449544)
Without the Pt layer, we do not observe the large SMR found for the Pt/Cobilayers with thick Co.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Anomalous spin Hall magnetoresistance in Pt/Co bilayers|Masashi Kawaguchi,Daiki Towa,Yong-Chang Lau,Saburo Takahashi,Masamitsu Hayashi###
(449587, 449587)
 Implementing the effect of the so-called interfacemagnetoresistance and the textured induced anisotropic scattering cannotaccount for the Co thickness dependent SMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Anomalous spin Hall magnetoresistance in Pt/Co bilayers|Masashi Kawaguchi,Daiki Towa,Yong-Chang Lau,Saburo Takahashi,Masamitsu Hayashi###
(449593, 449593)
 Implementing the effect of the so-called interfacemagnetoresistance and the textured induced anisotropic scattering cannotaccount for the Co thickness dependent SMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Anomalous spin Hall magnetoresistance in Pt/Co bilayers|Masashi Kawaguchi,Daiki Towa,Yong-Chang Lau,Saburo Takahashi,Masamitsu Hayashi###
(449604, 449604)
 Since the large SMR is present forW/Co but its magnitude reduces in W/CoFeB, we infer its origin is associatedwith a particular property of Co.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W/Co
###Anomalous spin Hall magnetoresistance in Pt/Co bilayers|Masashi Kawaguchi,Daiki Towa,Yong-Chang Lau,Saburo Takahashi,Masamitsu Hayashi###
(449615, 449617)
 Since the large SMR is present forW/Co but its magnitude reduces in W/CoFeB, we infer its origin is associatedwith a particular property of Co.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

W/CoFeB
###Anomalous spin Hall magnetoresistance in Pt/Co bilayers|Masashi Kawaguchi,Daiki Towa,Yong-Chang Lau,Saburo Takahashi,Masamitsu Hayashi###
(449629, 449633)
 Since the large SMR is present forW/Co but its magnitude reduces in W/CoFeB, we infer its origin is associatedwith a particular property of Co.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Co
###Anomalous spin Hall magnetoresistance in Pt/Co bilayers|Masashi Kawaguchi,Daiki Towa,Yong-Chang Lau,Saburo Takahashi,Masamitsu Hayashi###
(449659, 449659)
 Since the large SMR is present forW/Co but its magnitude reduces in W/CoFeB, we infer its origin is associatedwith a particular property of Co.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Quasiclassical theory of the spin-orbit magnetoresistance of three-dimensional Rashba metals|Sebastian Tölle,Michael Dzierzawa,Ulrich Eckern,Cosimo Gorini###
(449733, 449733)
 In addition to theintrinsic Rashba spin-orbit interaction, we also consider extrinsic spin-orbitcoupling via side-jump and skew scattering, and the Elliott-Yafet spinrelaxation mechanism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Quasiclassical theory of the spin-orbit magnetoresistance of three-dimensional Rashba metals|Sebastian Tölle,Michael Dzierzawa,Ulrich Eckern,Cosimo Gorini###
(450020, 450020)
 In particular, the anisotropy of the Elliott-Yafet spinrelaxation mechanism plays a major role for the interpretation of the observedmagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LuPdBi
###Shubnikov-de Haas oscillations, weak antilocalization effect and large linear magnetoresistance in the putative topological superconductor LuPdBi|Orest Pavlosiuk,Dariusz Kaczorowski,Piotr Wiśniewski###
(450514, 450516)
Shubnikov-de Haas oscillations, weak antilocalization effect and large linear magnetoresistance in the putative topological superconductor LuPdBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 1.8, ',', 2],[108.0, 2.3, ',', 2],[256.0, 1.5, 'T', 6],[283.0, 9, 'T', 6],[307.0, 10, 'K', 8],[347.0, 0.06, ',', 9]

LuPdBi
###Shubnikov-de Haas oscillations, weak antilocalization effect and large linear magnetoresistance in the putative topological superconductor LuPdBi|Orest Pavlosiuk,Dariusz Kaczorowski,Piotr Wiśniewski###
(450550, 450552)
 We present electronic transport and magnetic properties of single crystals ofsemimetallic half-Heusler phase LuPdBi, having theoretically predicted bandinversion requisite for nontrivial topological properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 1.8, ',', 1],[72.0, 2.3, ',', 1],[220.0, 1.5, 'T', 5],[247.0, 9, 'T', 5],[271.0, 10, 'K', 7],[311.0, 0.06, ',', 8]

K
###Shubnikov-de Haas oscillations, weak antilocalization effect and large linear magnetoresistance in the putative topological superconductor LuPdBi|Orest Pavlosiuk,Dariusz Kaczorowski,Piotr Wiśniewski###
(450600, 450600)
 The compoundexhibits superconductivity below a critical temperature T<missing VAR>rm c<missing VAR>1.8,K,with a zero-temperature upper critical field Brm c<missing VAR>2approx2.3,T<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 1.8, ',', 0],[24.0, 2.3, ',', 0],[172.0, 1.5, 'T', 4],[199.0, 9, 'T', 4],[223.0, 10, 'K', 6],[263.0, 0.06, ',', 7]

B
###Shubnikov-de Haas oscillations, weak antilocalization effect and large linear magnetoresistance in the putative topological superconductor LuPdBi|Orest Pavlosiuk,Dariusz Kaczorowski,Piotr Wiśniewski###
(450618, 450618)
 The compoundexhibits superconductivity below a critical temperature T<missing VAR>rm c<missing VAR>1.8,K,with a zero-temperature upper critical field Brm c<missing VAR>2approx2.3,T<missing VAR>.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 1.8, ',', 0],[6.0, 2.3, ',', 0],[154.0, 1.5, 'T', 4],[181.0, 9, 'T', 4],[205.0, 10, 'K', 6],[245.0, 0.06, ',', 7]

TaSb2
###Topological phase transition induced extreme magnetoresistance in TaSb$_{2}$|Zheng Wang,Yupeng Li,Yunhao Lu,Zhixuan Shen,Feng Sheng,Chunmu Feng,Yi Zheng,Zhuan Xu###
(450937, 450939)
Topological phase transition induced extreme magnetoresistance in TaSb2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 1.72, 'million', 1],[38.0, 1.5, 'K', 1],[41.0, 15, 'T', 1],[75.0, 15, 'T', 2],[94.0, 0.1, '%', 2],[194.0, 20, 'K', 4],[197.0, 60, 'K', 4],[397.0, 60, 'K', 7]

TaSb2
###Topological phase transition induced extreme magnetoresistance in TaSb$_{2}$|Zheng Wang,Yupeng Li,Yunhao Lu,Zhixuan Shen,Feng Sheng,Chunmu Feng,Yi Zheng,Zhuan Xu###
(450966, 450968)
 We report extremely large positive magnetoresistance of 1.72 million percentin single crystal TaSb2 at moderate conditions of 1.5 K and 15 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 1.72, 'million', 0],[9.0, 1.5, 'K', 0],[12.0, 15, 'T', 0],[46.0, 15, 'T', 1],[65.0, 0.1, '%', 1],[165.0, 20, 'K', 3],[168.0, 60, 'K', 3],[368.0, 60, 'K', 6]

B1.96
###Topological phase transition induced extreme magnetoresistance in TaSb$_{2}$|Zheng Wang,Yupeng Li,Yunhao Lu,Zhixuan Shen,Feng Sheng,Chunmu Feng,Yi Zheng,Zhuan Xu###
(451000, 451001)
 Thequadratic growth of magnetoresistance (MR propto,B1.96) is notsaturating up to 15 T, a manifestation of nearly perfect compensation with<0.1% mismatch between electron and hole pockets in this semimetal.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 1.72, 'million', 1],[23.0, 1.5, 'K', 1],[20.0, 15, 'T', 1],[13.0, 15, 'T', 0],[32.0, 0.1, '%', 0],[132.0, 20, 'K', 2],[135.0, 60, 'K', 2],[335.0, 60, 'K', 5]

TaSb2
###Topological phase transition induced extreme magnetoresistance in TaSb$_{2}$|Zheng Wang,Yupeng Li,Yunhao Lu,Zhixuan Shen,Feng Sheng,Chunmu Feng,Yi Zheng,Zhuan Xu###
(451193, 451195)
Using quantum oscillations of magnetoresistance and magnetic susceptibility,supported by density-functional theory calculations, we determined that themain hole Fermi surface of TaSb2 forms a unique shoulder structure alongthe F-L<missing VAR> line.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[238.0, 1.72, 'million', 4],[216.0, 1.5, 'K', 4],[213.0, 15, 'T', 4],[179.0, 15, 'T', 3],[160.0, 0.1, '%', 3],[60.0, 20, 'K', 1],[57.0, 60, 'K', 1],[141.0, 60, 'K', 2]

F
###Topological phase transition induced extreme magnetoresistance in TaSb$_{2}$|Zheng Wang,Yupeng Li,Yunhao Lu,Zhixuan Shen,Feng Sheng,Chunmu Feng,Yi Zheng,Zhuan Xu###
(451212, 451212)
Using quantum oscillations of magnetoresistance and magnetic susceptibility,supported by density-functional theory calculations, we determined that themain hole Fermi surface of TaSb2 forms a unique shoulder structure alongthe F-L<missing VAR> line.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[257.0, 1.72, 'million', 4],[235.0, 1.5, 'K', 4],[232.0, 15, 'T', 4],[198.0, 15, 'T', 3],[179.0, 0.1, '%', 3],[79.0, 20, 'K', 1],[76.0, 60, 'K', 1],[124.0, 60, 'K', 2]

V
###Topological phase transition induced extreme magnetoresistance in TaSb$_{2}$|Zheng Wang,Yupeng Li,Yunhao Lu,Zhixuan Shen,Feng Sheng,Chunmu Feng,Yi Zheng,Zhuan Xu###
(451244, 451244)
 The flat band top of this shoulder pocket is just a few meVabove the Fermi level, leading to the observed topological phase transition at20 K when the shoulder pocket disappears.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[289.0, 1.72, 'million', 5],[267.0, 1.5, 'K', 5],[264.0, 15, 'T', 5],[230.0, 15, 'T', 4],[211.0, 0.1, '%', 4],[111.0, 20, 'K', 2],[108.0, 60, 'K', 2],[92.0, 60, 'K', 1]

K
###Topological phase transition induced extreme magnetoresistance in TaSb$_{2}$|Zheng Wang,Yupeng Li,Yunhao Lu,Zhixuan Shen,Feng Sheng,Chunmu Feng,Yi Zheng,Zhuan Xu###
(451275, 451275)
 The flat band top of this shoulder pocket is just a few meVabove the Fermi level, leading to the observed topological phase transition at20 K when the shoulder pocket disappears.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[320.0, 1.72, 'million', 5],[298.0, 1.5, 'K', 5],[295.0, 15, 'T', 5],[261.0, 15, 'T', 4],[242.0, 0.1, '%', 4],[142.0, 20, 'K', 2],[139.0, 60, 'K', 2],[61.0, 60, 'K', 1]

C
###Negative magnetoresistivity in holography|Ya-Wen Sun,Qing Yang###
(451420, 451420)
 Negative magnetoresistivity is a special magnetotransport property associatedwith chiral anomaly in four dimensional chiral anomalous systems, which refersto the transport behavior that the D<missing VAR>C longitudinal magnetoresistivity decreaseswith increasing magnetic field.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Negative magnetoresistivity in holography|Ya-Wen Sun,Qing Yang###
(451504, 451504)
 In the absence of axial charge dissipation,we find that the quantum critical conductivity grows with increasing magneticfield when the backreaction strength is larger than a critical value, incontrast to the monotonically decreasing behavior of quantum criticalconductivity in the probe limit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Negative magnetoresistivity in holography|Ya-Wen Sun,Qing Yang###
(451625, 451625)
 The D<missing VAR>C longitudinal magnetoconductivityscales as B in the large magnetic field limit, which deviates from the exactB2 scaling of the probe limit result.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Negative magnetoresistivity in holography|Ya-Wen Sun,Qing Yang###
(451636, 451636)
 The D<missing VAR>C longitudinal magnetoconductivityscales as B in the large magnetic field limit, which deviates from the exactB2 scaling of the probe limit result.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B2
###Negative magnetoresistivity in holography|Ya-Wen Sun,Qing Yang###
(451662, 451663)
 The D<missing VAR>C longitudinal magnetoconductivityscales as B in the large magnetic field limit, which deviates from the exactB2 scaling of the probe limit result.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Negative magnetoresistivity in holography|Ya-Wen Sun,Qing Yang###
(451678, 451678)
 In both cases, the small frequencylongitudinal magnetoconductivity still agrees with the formula obtained fromthe hydrodynamic linear response theory, even in the large magnetic fieldlimit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

IrMn
###Investigation of anomalous-Hall and spin-Hall effects of antiferromagnetic IrMn sandwiched by Pt and YIG layers|T. Shang,H. L. Yang,Q. F. Zhan,Z. H. Zuo,Y. L. Xie,L. P. Liu,S. L. Zhang,Y. Zhang,H. H. Li,B. M. Wang,Y. H. Wu,S. Zhang,Run-Wei Li###
(451766, 451767)
Investigation of anomalous-Hall and spin-Hall effects of antiferromagnetic IrMn sandwiched by Pt and YIG<missing VAR> layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 3, 'nm', 3]

Pt
###Investigation of anomalous-Hall and spin-Hall effects of antiferromagnetic IrMn sandwiched by Pt and YIG layers|T. Shang,H. L. Yang,Q. F. Zhan,Z. H. Zuo,Y. L. Xie,L. P. Liu,S. L. Zhang,Y. Zhang,H. H. Li,B. M. Wang,Y. H. Wu,S. Zhang,Run-Wei Li###
(451773, 451773)
Investigation of anomalous-Hall and spin-Hall effects of antiferromagnetic IrMn sandwiched by Pt and YIG<missing VAR> layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 3, 'nm', 3]

YI
###Investigation of anomalous-Hall and spin-Hall effects of antiferromagnetic IrMn sandwiched by Pt and YIG layers|T. Shang,H. L. Yang,Q. F. Zhan,Z. H. Zuo,Y. L. Xie,L. P. Liu,S. L. Zhang,Y. Zhang,H. H. Li,B. M. Wang,Y. H. Wu,S. Zhang,Run-Wei Li###
(451777, 451778)
Investigation of anomalous-Hall and spin-Hall effects of antiferromagnetic IrMn sandwiched by Pt and YIG<missing VAR> layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 3, 'nm', 3]

IrMn
###Investigation of anomalous-Hall and spin-Hall effects of antiferromagnetic IrMn sandwiched by Pt and YIG layers|T. Shang,H. L. Yang,Q. F. Zhan,Z. H. Zuo,Y. L. Xie,L. P. Liu,S. L. Zhang,Y. Zhang,H. H. Li,B. M. Wang,Y. H. Wu,S. Zhang,Run-Wei Li###
(451798, 451799)
 We report an investigation of temperature and IrMn layered thicknessdependence of anomalous-Hall resistance (AHR), anisotropic magnetoresistance(AMR), and magnetization on Pt/Ir20Mn80/Y3Fe5O12 (Pt/IrMn/YIG)heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 3, 'nm', 2]

H
###Investigation of anomalous-Hall and spin-Hall effects of antiferromagnetic IrMn sandwiched by Pt and YIG layers|T. Shang,H. L. Yang,Q. F. Zhan,Z. H. Zuo,Y. L. Xie,L. P. Liu,S. L. Zhang,Y. Zhang,H. H. Li,B. M. Wang,Y. H. Wu,S. Zhang,Run-Wei Li###
(451818, 451818)
 We report an investigation of temperature and IrMn layered thicknessdependence of anomalous-Hall resistance (AHR), anisotropic magnetoresistance(AMR), and magnetization on Pt/Ir20Mn80/Y3Fe5O12 (Pt/IrMn/YIG)heterostructures.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 3, 'nm', 2]

Pt/Ir20Mn80/Y3Fe5O12
###Investigation of anomalous-Hall and spin-Hall effects of antiferromagnetic IrMn sandwiched by Pt and YIG layers|T. Shang,H. L. Yang,Q. F. Zhan,Z. H. Zuo,Y. L. Xie,L. P. Liu,S. L. Zhang,Y. Zhang,H. H. Li,B. M. Wang,Y. H. Wu,S. Zhang,Run-Wei Li###
(451841, 451853)
 We report an investigation of temperature and IrMn layered thicknessdependence of anomalous-Hall resistance (AHR), anisotropic magnetoresistance(AMR), and magnetization on Pt/Ir20Mn80/Y3Fe5O12 (Pt/IrMn/YIG)heterostructures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[80.0, 3, 'nm', 2]

Pt/IrMn/YI
###Investigation of anomalous-Hall and spin-Hall effects of antiferromagnetic IrMn sandwiched by Pt and YIG layers|T. Shang,H. L. Yang,Q. F. Zhan,Z. H. Zuo,Y. L. Xie,L. P. Liu,S. L. Zhang,Y. Zhang,H. H. Li,B. M. Wang,Y. H. Wu,S. Zhang,Run-Wei Li###
(451856, 451862)
 We report an investigation of temperature and IrMn layered thicknessdependence of anomalous-Hall resistance (AHR), anisotropic magnetoresistance(AMR), and magnetization on Pt/Ir20Mn80/Y3Fe5O12 (Pt/IrMn/YIG)heterostructures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[71.0, 3, 'nm', 2]

H
###Investigation of anomalous-Hall and spin-Hall effects of antiferromagnetic IrMn sandwiched by Pt and YIG layers|T. Shang,H. L. Yang,Q. F. Zhan,Z. H. Zuo,Y. L. Xie,L. P. Liu,S. L. Zhang,Y. Zhang,H. H. Li,B. M. Wang,Y. H. Wu,S. Zhang,Run-Wei Li###
(451877, 451877)
 The magnitude of AHR<missing VAR> is dramatically enhanced compared withPt/YIG<missing VAR> bilayers.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 3, 'nm', 1]

Pt/YI
###Investigation of anomalous-Hall and spin-Hall effects of antiferromagnetic IrMn sandwiched by Pt and YIG layers|T. Shang,H. L. Yang,Q. F. Zhan,Z. H. Zuo,Y. L. Xie,L. P. Liu,S. L. Zhang,Y. Zhang,H. H. Li,B. M. Wang,Y. H. Wu,S. Zhang,Run-Wei Li###
(451891, 451894)
 The magnitude of AHR<missing VAR> is dramatically enhanced compared withPt/YIG<missing VAR> bilayers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[39.0, 3, 'nm', 1]

IrMn
###Investigation of anomalous-Hall and spin-Hall effects of antiferromagnetic IrMn sandwiched by Pt and YIG layers|T. Shang,H. L. Yang,Q. F. Zhan,Z. H. Zuo,Y. L. Xie,L. P. Liu,S. L. Zhang,Y. Zhang,H. H. Li,B. M. Wang,Y. H. Wu,S. Zhang,Run-Wei Li###
(451927, 451928)
 The enhancement is much more profound at higher temperaturesand peaks at the IrMn thickness of 3 nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 3, 'nm', 0]

S
###Investigation of anomalous-Hall and spin-Hall effects of antiferromagnetic IrMn sandwiched by Pt and YIG layers|T. Shang,H. L. Yang,Q. F. Zhan,Z. H. Zuo,Y. L. Xie,L. P. Liu,S. L. Zhang,Y. Zhang,H. H. Li,B. M. Wang,Y. H. Wu,S. Zhang,Run-Wei Li###
(451948, 451948)
 The observed spin-Hallmagnetoresistance (SMR) in the temperature range of 10-300 K indicates that thespin current generated in the Pt layer can penetrate the entire thickness ofthe IrMn layer to interact with the YIG<missing VAR> layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 3, 'nm', 1]

K
###Investigation of anomalous-Hall and spin-Hall effects of antiferromagnetic IrMn sandwiched by Pt and YIG layers|T. Shang,H. L. Yang,Q. F. Zhan,Z. H. Zuo,Y. L. Xie,L. P. Liu,S. L. Zhang,Y. Zhang,H. H. Li,B. M. Wang,Y. H. Wu,S. Zhang,Run-Wei Li###
(451967, 451967)
 The observed spin-Hallmagnetoresistance (SMR) in the temperature range of 10-300 K indicates that thespin current generated in the Pt layer can penetrate the entire thickness ofthe IrMn layer to interact with the YIG<missing VAR> layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 3, 'nm', 1]

Pt
###Investigation of anomalous-Hall and spin-Hall effects of antiferromagnetic IrMn sandwiched by Pt and YIG layers|T. Shang,H. L. Yang,Q. F. Zhan,Z. H. Zuo,Y. L. Xie,L. P. Liu,S. L. Zhang,Y. Zhang,H. H. Li,B. M. Wang,Y. H. Wu,S. Zhang,Run-Wei Li###
(451986, 451986)
 The observed spin-Hallmagnetoresistance (SMR) in the temperature range of 10-300 K indicates that thespin current generated in the Pt layer can penetrate the entire thickness ofthe IrMn layer to interact with the YIG<missing VAR> layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 3, 'nm', 1]

IrMn
###Investigation of anomalous-Hall and spin-Hall effects of antiferromagnetic IrMn sandwiched by Pt and YIG layers|T. Shang,H. L. Yang,Q. F. Zhan,Z. H. Zuo,Y. L. Xie,L. P. Liu,S. L. Zhang,Y. Zhang,H. H. Li,B. M. Wang,Y. H. Wu,S. Zhang,Run-Wei Li###
(452005, 452006)
 The observed spin-Hallmagnetoresistance (SMR) in the temperature range of 10-300 K indicates that thespin current generated in the Pt layer can penetrate the entire thickness ofthe IrMn layer to interact with the YIG<missing VAR> layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 3, 'nm', 1]

YI
###Investigation of anomalous-Hall and spin-Hall effects of antiferromagnetic IrMn sandwiched by Pt and YIG layers|T. Shang,H. L. Yang,Q. F. Zhan,Z. H. Zuo,Y. L. Xie,L. P. Liu,S. L. Zhang,Y. Zhang,H. H. Li,B. M. Wang,Y. H. Wu,S. Zhang,Run-Wei Li###
(452018, 452019)
 The observed spin-Hallmagnetoresistance (SMR) in the temperature range of 10-300 K indicates that thespin current generated in the Pt layer can penetrate the entire thickness ofthe IrMn layer to interact with the YIG<missing VAR> layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 3, 'nm', 1]

C
###Investigation of anomalous-Hall and spin-Hall effects of antiferromagnetic IrMn sandwiched by Pt and YIG layers|T. Shang,H. L. Yang,Q. F. Zhan,Z. H. Zuo,Y. L. Xie,L. P. Liu,S. L. Zhang,Y. Zhang,H. H. Li,B. M. Wang,Y. H. Wu,S. Zhang,Run-Wei Li###
(452039, 452039)
 The lack of conventionalanisotropic magnetoresistance (CAMR) implies that the insertion of the IrMnlayer between Pt and YIG<missing VAR> efficiently suppresses the magnetic proximity effect(MPE) on induced Pt moments by YIG<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 3, 'nm', 2]

IrMn
###Investigation of anomalous-Hall and spin-Hall effects of antiferromagnetic IrMn sandwiched by Pt and YIG layers|T. Shang,H. L. Yang,Q. F. Zhan,Z. H. Zuo,Y. L. Xie,L. P. Liu,S. L. Zhang,Y. Zhang,H. H. Li,B. M. Wang,Y. H. Wu,S. Zhang,Run-Wei Li###
(452057, 452058)
 The lack of conventionalanisotropic magnetoresistance (CAMR) implies that the insertion of the IrMnlayer between Pt and YIG<missing VAR> efficiently suppresses the magnetic proximity effect(MPE) on induced Pt moments by YIG<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 3, 'nm', 2]

Pt
###Investigation of anomalous-Hall and spin-Hall effects of antiferromagnetic IrMn sandwiched by Pt and YIG layers|T. Shang,H. L. Yang,Q. F. Zhan,Z. H. Zuo,Y. L. Xie,L. P. Liu,S. L. Zhang,Y. Zhang,H. H. Li,B. M. Wang,Y. H. Wu,S. Zhang,Run-Wei Li###
(452065, 452065)
 The lack of conventionalanisotropic magnetoresistance (CAMR) implies that the insertion of the IrMnlayer between Pt and YIG<missing VAR> efficiently suppresses the magnetic proximity effect(MPE) on induced Pt moments by YIG<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 3, 'nm', 2]

YI
###Investigation of anomalous-Hall and spin-Hall effects of antiferromagnetic IrMn sandwiched by Pt and YIG layers|T. Shang,H. L. Yang,Q. F. Zhan,Z. H. Zuo,Y. L. Xie,L. P. Liu,S. L. Zhang,Y. Zhang,H. H. Li,B. M. Wang,Y. H. Wu,S. Zhang,Run-Wei Li###
(452069, 452070)
 The lack of conventionalanisotropic magnetoresistance (CAMR) implies that the insertion of the IrMnlayer between Pt and YIG<missing VAR> efficiently suppresses the magnetic proximity effect(MPE) on induced Pt moments by YIG<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 3, 'nm', 2]

Pt
###Investigation of anomalous-Hall and spin-Hall effects of antiferromagnetic IrMn sandwiched by Pt and YIG layers|T. Shang,H. L. Yang,Q. F. Zhan,Z. H. Zuo,Y. L. Xie,L. P. Liu,S. L. Zhang,Y. Zhang,H. H. Li,B. M. Wang,Y. H. Wu,S. Zhang,Run-Wei Li###
(452096, 452096)
 The lack of conventionalanisotropic magnetoresistance (CAMR) implies that the insertion of the IrMnlayer between Pt and YIG<missing VAR> efficiently suppresses the magnetic proximity effect(MPE) on induced Pt moments by YIG<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 3, 'nm', 2]

YI
###Investigation of anomalous-Hall and spin-Hall effects of antiferromagnetic IrMn sandwiched by Pt and YIG layers|T. Shang,H. L. Yang,Q. F. Zhan,Z. H. Zuo,Y. L. Xie,L. P. Liu,S. L. Zhang,Y. Zhang,H. H. Li,B. M. Wang,Y. H. Wu,S. Zhang,Run-Wei Li###
(452102, 452103)
 The lack of conventionalanisotropic magnetoresistance (CAMR) implies that the insertion of the IrMnlayer between Pt and YIG<missing VAR> efficiently suppresses the magnetic proximity effect(MPE) on induced Pt moments by YIG<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 3, 'nm', 2]

InMn
###Investigation of anomalous-Hall and spin-Hall effects of antiferromagnetic IrMn sandwiched by Pt and YIG layers|T. Shang,H. L. Yang,Q. F. Zhan,Z. H. Zuo,Y. L. Xie,L. P. Liu,S. L. Zhang,Y. Zhang,H. H. Li,B. M. Wang,Y. H. Wu,S. Zhang,Run-Wei Li###
(452126, 452127)
 Our results suggest that the dual roles ofthe InMn insertion in Pt/IrMn/YIG<missing VAR> heterostructures are to block the MPE and totransport the spin current between Pt and YIG<missing VAR> layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[193.0, 3, 'nm', 3]

Pt/IrMn/YI
###Investigation of anomalous-Hall and spin-Hall effects of antiferromagnetic IrMn sandwiched by Pt and YIG layers|T. Shang,H. L. Yang,Q. F. Zhan,Z. H. Zuo,Y. L. Xie,L. P. Liu,S. L. Zhang,Y. Zhang,H. H. Li,B. M. Wang,Y. H. Wu,S. Zhang,Run-Wei Li###
(452133, 452139)
 Our results suggest that the dual roles ofthe InMn insertion in Pt/IrMn/YIG<missing VAR> heterostructures are to block the MPE and totransport the spin current between Pt and YIG<missing VAR> layers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[200.0, 3, 'nm', 3]

Pt
###Investigation of anomalous-Hall and spin-Hall effects of antiferromagnetic IrMn sandwiched by Pt and YIG layers|T. Shang,H. L. Yang,Q. F. Zhan,Z. H. Zuo,Y. L. Xie,L. P. Liu,S. L. Zhang,Y. Zhang,H. H. Li,B. M. Wang,Y. H. Wu,S. Zhang,Run-Wei Li###
(452171, 452171)
 Our results suggest that the dual roles ofthe InMn insertion in Pt/IrMn/YIG<missing VAR> heterostructures are to block the MPE and totransport the spin current between Pt and YIG<missing VAR> layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[238.0, 3, 'nm', 3]

YI
###Investigation of anomalous-Hall and spin-Hall effects of antiferromagnetic IrMn sandwiched by Pt and YIG layers|T. Shang,H. L. Yang,Q. F. Zhan,Z. H. Zuo,Y. L. Xie,L. P. Liu,S. L. Zhang,Y. Zhang,H. H. Li,B. M. Wang,Y. H. Wu,S. Zhang,Run-Wei Li###
(452175, 452176)
 Our results suggest that the dual roles ofthe InMn insertion in Pt/IrMn/YIG<missing VAR> heterostructures are to block the MPE and totransport the spin current between Pt and YIG<missing VAR> layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[242.0, 3, 'nm', 3]

H
###Investigation of anomalous-Hall and spin-Hall effects of antiferromagnetic IrMn sandwiched by Pt and YIG layers|T. Shang,H. L. Yang,Q. F. Zhan,Z. H. Zuo,Y. L. Xie,L. P. Liu,S. L. Zhang,Y. Zhang,H. H. Li,B. M. Wang,Y. H. Wu,S. Zhang,Run-Wei Li###
(452198, 452198)
 We discuss possiblemechanisms for the enhanced AHR<missing VAR>.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[265.0, 3, 'nm', 4]

ZrTe5
###Transport evidence for the three-dimensional Dirac semimetal phase in ZrTe5|Guolin Zheng,Jianwei Lu,Xiangde Zhu,Wei Ning,Yuyan Han,Hongwei Zhang,Jinglei Zhang,Chuanying Xi,Jiyong Yang,Haifeng Du,Kun Yang,Yuheng Zhang,Mingliang Tian###
(452230, 452232)
Transport evidence for the three-dimensional Dirac semimetal phase in ZrTe5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 3, 'D', 3],[155.0, 31, 'Tesla', 3],[303.0, 3, 'D', 6],[394.0, 3, 'D', 8]

ZrTe5
###Transport evidence for the three-dimensional Dirac semimetal phase in ZrTe5|Guolin Zheng,Jianwei Lu,Xiangde Zhu,Wei Ning,Yuyan Han,Hongwei Zhang,Jinglei Zhang,Chuanying Xi,Jiyong Yang,Haifeng Du,Kun Yang,Yuheng Zhang,Mingliang Tian###
(452361, 452363)
 Here we report directquantum transport evidence of 3D Dirac semimetal phase of layered materialZrTe5 by angular dependent magnetoresistance measurements under high magneticfields up to 31 Tesla.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 3, 'D', 0],[24.0, 31, 'Tesla', 0],[172.0, 3, 'D', 3],[263.0, 3, 'D', 5]

H
###Transport evidence for the three-dimensional Dirac semimetal phase in ZrTe5|Guolin Zheng,Jianwei Lu,Xiangde Zhu,Wei Ning,Yuyan Han,Hongwei Zhang,Jinglei Zhang,Chuanying Xi,Jiyong Yang,Haifeng Du,Kun Yang,Yuheng Zhang,Mingliang Tian###
(452452, 452452)
 Pronounced Shubnikov-de Hass(SdH) quantum oscillations in both longitudinal magnetoresistance andtransverse Hall resistance were observed, revealing anisotropic light cyclotronmasses and high mobility of the system.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 3, 'D', 2],[65.0, 31, 'Tesla', 2],[83.0, 3, 'D', 1],[174.0, 3, 'D', 3]

In
###Transport evidence for the three-dimensional Dirac semimetal phase in ZrTe5|Guolin Zheng,Jianwei Lu,Xiangde Zhu,Wei Ning,Yuyan Han,Hongwei Zhang,Jinglei Zhang,Chuanying Xi,Jiyong Yang,Haifeng Du,Kun Yang,Yuheng Zhang,Mingliang Tian###
(452505, 452505)
 In particular, a nontrivial pi-Berryphase in the SdH gives clear evidence for 3D Dirac semimetal phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[159.0, 3, 'D', 3],[118.0, 31, 'Tesla', 3],[30.0, 3, 'D', 0],[121.0, 3, 'D', 2]

H
###Transport evidence for the three-dimensional Dirac semimetal phase in ZrTe5|Guolin Zheng,Jianwei Lu,Xiangde Zhu,Wei Ning,Yuyan Han,Hongwei Zhang,Jinglei Zhang,Chuanying Xi,Jiyong Yang,Haifeng Du,Kun Yang,Yuheng Zhang,Mingliang Tian###
(452526, 452526)
 In particular, a nontrivial pi-Berryphase in the SdH gives clear evidence for 3D Dirac semimetal phase.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[180.0, 3, 'D', 3],[139.0, 31, 'Tesla', 3],[9.0, 3, 'D', 0],[100.0, 3, 'D', 2]

ZrTe5
###Transport evidence for the three-dimensional Dirac semimetal phase in ZrTe5|Guolin Zheng,Jianwei Lu,Xiangde Zhu,Wei Ning,Yuyan Han,Hongwei Zhang,Jinglei Zhang,Chuanying Xi,Jiyong Yang,Haifeng Du,Kun Yang,Yuheng Zhang,Mingliang Tian###
(452610, 452612)
 Our results indicate that ZrTe5 is an idealplatform to study 3D massless Dirac and Weyl fermions in a layered compound.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[264.0, 3, 'D', 5],[223.0, 31, 'Tesla', 5],[75.0, 3, 'D', 2],[14.0, 3, 'D', 0]

In
###Electron trajectories and magnetotransport in nanopatterned graphene under commensurability conditions|Stephen R. Power,Morten Rishøj Thomsen,Antti-Pekka Jauho,Thomas Garm Pedersen###
(452896, 452896)
 Inthis work a fully atomistic, device-based simulation of magnetoresistanceexperiments allows us to analyse both the resistance peaks and the current flowat commensurability conditions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 2, 'D', 3]

At
###Topologically Protected Vortex Structures to Realize Low-Noise Magnetic Sensors|Dieter Suess,Anton Bachleitner-Hofmann,Armin Satz,Herbert Weitensfelder,Christoph Vogler,Florian Bruckner,Claas Abert,Klemens Prügl,Jürgen Zimmer,Christian Huber,Sebastian Luber,Wolfgang Raberg,Thomas Schrefl,Hubert Brückl###
(453314, 453314)
 At the core of such sensors, a microstructuredferromagnetic thin film element transduces the magnetic signal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Topologically Protected Vortex Structures to Realize Low-Noise Magnetic Sensors|Dieter Suess,Anton Bachleitner-Hofmann,Armin Satz,Herbert Weitensfelder,Christoph Vogler,Florian Bruckner,Claas Abert,Klemens Prügl,Jürgen Zimmer,Christian Huber,Sebastian Luber,Wolfgang Raberg,Thomas Schrefl,Hubert Brückl###
(453365, 453365)
 Such elementsusually switch via multi-domain, C- or S-shaped magnetization states and,therefore, often exhibit an open non-linear hysteresis curve.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Topologically Protected Vortex Structures to Realize Low-Noise Magnetic Sensors|Dieter Suess,Anton Bachleitner-Hofmann,Armin Satz,Herbert Weitensfelder,Christoph Vogler,Florian Bruckner,Claas Abert,Klemens Prügl,Jürgen Zimmer,Christian Huber,Sebastian Luber,Wolfgang Raberg,Thomas Schrefl,Hubert Brückl###
(453370, 453370)
 Such elementsusually switch via multi-domain, C- or S-shaped magnetization states and,therefore, often exhibit an open non-linear hysteresis curve.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HgTe
###Magnetoresistance in the in-plane magnetic field induced semi-metallic phase of inverted HgTe quantum wells|T. Khouri,S. Pezzini,M. Bendias,P. Leubner,U. Zeitler,N. E. Hussey,H. Buhmann,L. W. Molenkamp,M. Titov,S. Wiedmann###
(453747, 453748)
Magnetoresistance in the in-plane magnetic field induced semi-metallic phase of inverted HgTe quantum wells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 10, 'T', 2]

In
###Magnetoresistance in the in-plane magnetic field induced semi-metallic phase of inverted HgTe quantum wells|T. Khouri,S. Pezzini,M. Bendias,P. Leubner,U. Zeitler,N. E. Hussey,H. Buhmann,L. W. Molenkamp,M. Titov,S. Wiedmann###
(453755, 453755)
 In this study we have measured the magnetoresistance response of invertedHgTe quantum wells in the presence of a large parallel magnetic field up to 33T<missing VAR> is applied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 10, 'T', 1]

HgTe
###Magnetoresistance in the in-plane magnetic field induced semi-metallic phase of inverted HgTe quantum wells|T. Khouri,S. Pezzini,M. Bendias,P. Leubner,U. Zeitler,N. E. Hussey,H. Buhmann,L. W. Molenkamp,M. Titov,S. Wiedmann###
(453778, 453779)
 In this study we have measured the magnetoresistance response of invertedHgTe quantum wells in the presence of a large parallel magnetic field up to 33T<missing VAR> is applied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 10, 'T', 1]

B
###Magnetoresistance in the in-plane magnetic field induced semi-metallic phase of inverted HgTe quantum wells|T. Khouri,S. Pezzini,M. Bendias,P. Leubner,U. Zeitler,N. E. Hussey,H. Buhmann,L. W. Molenkamp,M. Titov,S. Wiedmann###
(453946, 453946)
 This feature isaccompanied by a vanishing of non-locality and is consistent with a predictedmodification of the energy spectrum that becomes gapless at a critical in-planefield Bc<missing VAR>.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 10, 'T', 1]

B
###Magnetoresistance in the in-plane magnetic field induced semi-metallic phase of inverted HgTe quantum wells|T. Khouri,S. Pezzini,M. Bendias,P. Leubner,U. Zeitler,N. E. Hussey,H. Buhmann,L. W. Molenkamp,M. Titov,S. Wiedmann###
(453960, 453960)
 Magnetic fields in excess of Bc<missing VAR> allow us to investigate theevolution of the magnetoresistance in this field-induced semi-metallic regionbeyond the known regime.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 10, 'T', 2]

II
###Bulk Fermi surface of the type-II Weyl semimetal candidate NbIrTe$_{4}$|Rico Schönemann,Yu-Che Chiu,Wenkai Zheng,Victor Quito,Shouvik Sur,Gregory T. McCandless,Julia Y. Chan,Luis Balicas###
(454217, 454218)
Bulk Fermi surface of the type-II Weyl semimetal candidate NbIrTe4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[285.0, 35, 'T', 4]

NbIrTe4
###Bulk Fermi surface of the type-II Weyl semimetal candidate NbIrTe$_{4}$|Rico Schönemann,Yu-Che Chiu,Wenkai Zheng,Victor Quito,Shouvik Sur,Gregory T. McCandless,Julia Y. Chan,Luis Balicas###
(454226, 454229)
Bulk Fermi surface of the type-II Weyl semimetal candidate NbIrTe4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[274.0, 35, 'T', 4]

II
###Bulk Fermi surface of the type-II Weyl semimetal candidate NbIrTe$_{4}$|Rico Schönemann,Yu-Che Chiu,Wenkai Zheng,Victor Quito,Shouvik Sur,Gregory T. McCandless,Julia Y. Chan,Luis Balicas###
(454287, 454288)
 Recently, a new group of layered transition-metal tetra-chalcogenides wereproposed, via first principles calculations, to correspond to a new family ofWeyl type-II semimetals with promising topological properties in the bulk aswell as in the monolayer limit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[215.0, 35, 'T', 3]

In
###Bulk Fermi surface of the type-II Weyl semimetal candidate NbIrTe$_{4}$|Rico Schönemann,Yu-Che Chiu,Wenkai Zheng,Victor Quito,Shouvik Sur,Gregory T. McCandless,Julia Y. Chan,Luis Balicas###
(454322, 454322)
 In this article, we present measurements of theShubnikov-de Haas (SdH) and de Haas-van Alphen effects under high magneticfields for the type-II Weyl semimetallic candidate NbIrTe4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 35, 'T', 2]

H
###Bulk Fermi surface of the type-II Weyl semimetal candidate NbIrTe$_{4}$|Rico Schönemann,Yu-Che Chiu,Wenkai Zheng,Victor Quito,Shouvik Sur,Gregory T. McCandless,Julia Y. Chan,Luis Balicas###
(454348, 454348)
 In this article, we present measurements of theShubnikov-de Haas (SdH) and de Haas-van Alphen effects under high magneticfields for the type-II Weyl semimetallic candidate NbIrTe4.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 35, 'T', 2]

II
###Bulk Fermi surface of the type-II Weyl semimetal candidate NbIrTe$_{4}$|Rico Schönemann,Yu-Che Chiu,Wenkai Zheng,Victor Quito,Shouvik Sur,Gregory T. McCandless,Julia Y. Chan,Luis Balicas###
(454378, 454379)
 In this article, we present measurements of theShubnikov-de Haas (SdH) and de Haas-van Alphen effects under high magneticfields for the type-II Weyl semimetallic candidate NbIrTe4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 35, 'T', 2]

NbIrTe4
###Bulk Fermi surface of the type-II Weyl semimetal candidate NbIrTe$_{4}$|Rico Schönemann,Yu-Che Chiu,Wenkai Zheng,Victor Quito,Shouvik Sur,Gregory T. McCandless,Julia Y. Chan,Luis Balicas###
(454387, 454390)
 In this article, we present measurements of theShubnikov-de Haas (SdH) and de Haas-van Alphen effects under high magneticfields for the type-II Weyl semimetallic candidate NbIrTe4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 35, 'T', 2]

II
###Bulk Fermi surface of the type-II Weyl semimetal candidate NbIrTe$_{4}$|Rico Schönemann,Yu-Che Chiu,Wenkai Zheng,Victor Quito,Shouvik Sur,Gregory T. McCandless,Julia Y. Chan,Luis Balicas###
(454452, 454453)
 We find thatthe angular dependence of the observed Fermi surface extremal cross-sectionalareas agree well with our DFT calculations supporting the existence of Weyltype-II points in this material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 35, 'T', 1]

NbIrTe4
###Bulk Fermi surface of the type-II Weyl semimetal candidate NbIrTe$_{4}$|Rico Schönemann,Yu-Che Chiu,Wenkai Zheng,Victor Quito,Shouvik Sur,Gregory T. McCandless,Julia Y. Chan,Luis Balicas###
(454485, 454488)
 Although we observe a large and non-saturatingmagnetoresistivity in NbIrTe4 under fields all the way up to 35 T,Hall-effect measurements indicate that NbIrTe4 is not a compensatedsemimetal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 35, 'T', 0]

NbIrTe4
###Bulk Fermi surface of the type-II Weyl semimetal candidate NbIrTe$_{4}$|Rico Schönemann,Yu-Che Chiu,Wenkai Zheng,Victor Quito,Shouvik Sur,Gregory T. McCandless,Julia Y. Chan,Luis Balicas###
(454517, 454520)
 Although we observe a large and non-saturatingmagnetoresistivity in NbIrTe4 under fields all the way up to 35 T,Hall-effect measurements indicate that NbIrTe4 is not a compensatedsemimetal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 35, 'T', 0]

WS2
###Negative to Positive Crossover of Magnetoresistance in Layered WS2 with Ohmic Contact|Yangwei Zhang,Honglie Ning,Yanan Li,Yanzhao Liu,Jian Wang###
(454669, 454671)
Negative to Positive Crossover of Magnetoresistance in Layered WS2 with Ohmic Contact.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Negative to Positive Crossover of Magnetoresistance in Layered WS2 with Ohmic Contact|Yangwei Zhang,Honglie Ning,Yanan Li,Yanzhao Liu,Jian Wang###
(454726, 454726)
 Among them, transition metal dichalcogenide (TMDC),a typical representative, attracts much attention due to the excellentperformance in field effect transistor (FET) related measurements andapplications.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Negative to Positive Crossover of Magnetoresistance in Layered WS2 with Ohmic Contact|Yangwei Zhang,Honglie Ning,Yanan Li,Yanzhao Liu,Jian Wang###
(454764, 454764)
 Among them, transition metal dichalcogenide (TMDC),a typical representative, attracts much attention due to the excellentperformance in field effect transistor (FET) related measurements andapplications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Negative to Positive Crossover of Magnetoresistance in Layered WS2 with Ohmic Contact|Yangwei Zhang,Honglie Ning,Yanan Li,Yanzhao Liu,Jian Wang###
(454787, 454787)
 Particularly, when TMDC eventually reaches few-layer dimension, awide range of electronic and optical properties, in striking contrast to bulksamples, are detected.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Negative to Positive Crossover of Magnetoresistance in Layered WS2 with Ohmic Contact|Yangwei Zhang,Honglie Ning,Yanan Li,Yanzhao Liu,Jian Wang###
(454837, 454837)
 In this Letter, we synthesized single crystalline WS2nanoflakes by physical vapor deposition (PVD) method and carried out a seriesof transport measurements of contact resistance and magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WS2
###Negative to Positive Crossover of Magnetoresistance in Layered WS2 with Ohmic Contact|Yangwei Zhang,Honglie Ning,Yanan Li,Yanzhao Liu,Jian Wang###
(454852, 454854)
 In this Letter, we synthesized single crystalline WS2nanoflakes by physical vapor deposition (PVD) method and carried out a seriesof transport measurements of contact resistance and magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PV
###Negative to Positive Crossover of Magnetoresistance in Layered WS2 with Ohmic Contact|Yangwei Zhang,Honglie Ning,Yanan Li,Yanzhao Liu,Jian Wang###
(454868, 454869)
 In this Letter, we synthesized single crystalline WS2nanoflakes by physical vapor deposition (PVD) method and carried out a seriesof transport measurements of contact resistance and magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(FIB)
###Negative to Positive Crossover of Magnetoresistance in Layered WS2 with Ohmic Contact|Yangwei Zhang,Honglie Ning,Yanan Li,Yanzhao Liu,Jian Wang###
(454910, 454914)
 Focusedion beam (FIB) technology was applied to deposit Pt electrodes on WS2 flakes.
Featurization successful!
0,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Negative to Positive Crossover of Magnetoresistance in Layered WS2 with Ohmic Contact|Yangwei Zhang,Honglie Ning,Yanan Li,Yanzhao Liu,Jian Wang###
(454926, 454926)
 Focusedion beam (FIB) technology was applied to deposit Pt electrodes on WS2 flakes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WS2
###Negative to Positive Crossover of Magnetoresistance in Layered WS2 with Ohmic Contact|Yangwei Zhang,Honglie Ning,Yanan Li,Yanzhao Liu,Jian Wang###
(454932, 454934)
 Focusedion beam (FIB) technology was applied to deposit Pt electrodes on WS2 flakes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FIB
###Negative to Positive Crossover of Magnetoresistance in Layered WS2 with Ohmic Contact|Yangwei Zhang,Honglie Ning,Yanan Li,Yanzhao Liu,Jian Wang###
(454964, 454966)
Different from the electron beam lithography (EBL) fabricated electrodes,FIB-deposited leads exhibited ohmic contact, resolving the dilemma of Schottkybarrier.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Negative to Positive Crossover of Magnetoresistance in Layered WS2 with Ohmic Contact|Yangwei Zhang,Honglie Ning,Yanan Li,Yanzhao Liu,Jian Wang###
(455070, 455070)
 Our work offers a pathway to optimize thecontact for TMDC and reveals the magnetoresistance characteristics of WS2flakes, which may stimulate further studies on TMDC and corresponding potentialelectronic and optoelectronic applications.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WS2
###Negative to Positive Crossover of Magnetoresistance in Layered WS2 with Ohmic Contact|Yangwei Zhang,Honglie Ning,Yanan Li,Yanzhao Liu,Jian Wang###
(455084, 455086)
 Our work offers a pathway to optimize thecontact for TMDC and reveals the magnetoresistance characteristics of WS2flakes, which may stimulate further studies on TMDC and corresponding potentialelectronic and optoelectronic applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Negative to Positive Crossover of Magnetoresistance in Layered WS2 with Ohmic Contact|Yangwei Zhang,Honglie Ning,Yanan Li,Yanzhao Liu,Jian Wang###
(455107, 455107)
 Our work offers a pathway to optimize thecontact for TMDC and reveals the magnetoresistance characteristics of WS2flakes, which may stimulate further studies on TMDC and corresponding potentialelectronic and optoelectronic applications.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co1.21V1.79O4
###A variety of elastic anomalies in orbital-active nearly-itinerant cobalt vanadate spinel|Tadataka Watanabe,Shogo Yamada,Rui Koborinai,Takuro Katsufuji###
(455187, 455192)
 We perform ultrasound velocity measurements on a single crystal ofnearly-metallic spinel Co1.21V1.79O4 which exhibits aferrimagnetic phase transition at T<missing VAR>C sim 165 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2557142857142857,0,0,0,0.17285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 165, 'K', 0],[319.0, 95, 'K', 5],[326.0, 50, 'K', 5],[376.0, 2, ',', 5],[429.0, 2, ',', 6]

C
###A variety of elastic anomalies in orbital-active nearly-itinerant cobalt vanadate spinel|Tadataka Watanabe,Shogo Yamada,Rui Koborinai,Takuro Katsufuji###
(455210, 455210)
 We perform ultrasound velocity measurements on a single crystal ofnearly-metallic spinel Co1.21V1.79O4 which exhibits aferrimagnetic phase transition at T<missing VAR>C sim 165 K.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 165, 'K', 0],[301.0, 95, 'K', 5],[308.0, 50, 'K', 5],[358.0, 2, ',', 5],[411.0, 2, ',', 6]

C
###A variety of elastic anomalies in orbital-active nearly-itinerant cobalt vanadate spinel|Tadataka Watanabe,Shogo Yamada,Rui Koborinai,Takuro Katsufuji###
(455248, 455248)
 The experiments reveal avariety of elastic anomalies in not only the paramagnetic phase above T<missing VAR>C butalso the ferrimagnetic phase below T<missing VAR>C, which should be driven by thenearly-itinerant character of the orbitally-degenerate V 3d<missing VAR> electrons.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 165, 'K', 1],[263.0, 95, 'K', 4],[270.0, 50, 'K', 4],[320.0, 2, ',', 4],[373.0, 2, ',', 5]

C
###A variety of elastic anomalies in orbital-active nearly-itinerant cobalt vanadate spinel|Tadataka Watanabe,Shogo Yamada,Rui Koborinai,Takuro Katsufuji###
(455264, 455264)
 The experiments reveal avariety of elastic anomalies in not only the paramagnetic phase above T<missing VAR>C butalso the ferrimagnetic phase below T<missing VAR>C, which should be driven by thenearly-itinerant character of the orbitally-degenerate V 3d<missing VAR> electrons.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 165, 'K', 1],[247.0, 95, 'K', 4],[254.0, 50, 'K', 4],[304.0, 2, ',', 4],[357.0, 2, ',', 5]

V
###A variety of elastic anomalies in orbital-active nearly-itinerant cobalt vanadate spinel|Tadataka Watanabe,Shogo Yamada,Rui Koborinai,Takuro Katsufuji###
(455294, 455294)
 The experiments reveal avariety of elastic anomalies in not only the paramagnetic phase above T<missing VAR>C butalso the ferrimagnetic phase below T<missing VAR>C, which should be driven by thenearly-itinerant character of the orbitally-degenerate V 3d<missing VAR> electrons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 165, 'K', 1],[217.0, 95, 'K', 4],[224.0, 50, 'K', 4],[274.0, 2, ',', 4],[327.0, 2, ',', 5]

In
###A variety of elastic anomalies in orbital-active nearly-itinerant cobalt vanadate spinel|Tadataka Watanabe,Shogo Yamada,Rui Koborinai,Takuro Katsufuji###
(455302, 455302)
 In theparamagnetic phase above T<missing VAR>C, the elastic moduli exhibitelastic-mode-dependent unusual temperature variations, suggesting the existenceof a dynamic spin-cluster state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 165, 'K', 2],[209.0, 95, 'K', 3],[216.0, 50, 'K', 3],[266.0, 2, ',', 3],[319.0, 2, ',', 4]

C
###A variety of elastic anomalies in orbital-active nearly-itinerant cobalt vanadate spinel|Tadataka Watanabe,Shogo Yamada,Rui Koborinai,Takuro Katsufuji###
(455314, 455314)
 In theparamagnetic phase above T<missing VAR>C, the elastic moduli exhibitelastic-mode-dependent unusual temperature variations, suggesting the existenceof a dynamic spin-cluster state.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 165, 'K', 2],[197.0, 95, 'K', 3],[204.0, 50, 'K', 3],[254.0, 2, ',', 3],[307.0, 2, ',', 4]

C
###A variety of elastic anomalies in orbital-active nearly-itinerant cobalt vanadate spinel|Tadataka Watanabe,Shogo Yamada,Rui Koborinai,Takuro Katsufuji###
(455365, 455365)
 Furthermore, above T<missing VAR>C, the sensitivemagnetic-field response of the elastic moduli suggests that, with the negativemagnetoresistance, the magnetic-field-enhanced nearly-itinerant character ofthe V 3d<missing VAR> electrons emerges from the spin-cluster state.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 165, 'K', 3],[146.0, 95, 'K', 2],[153.0, 50, 'K', 2],[203.0, 2, ',', 2],[256.0, 2, ',', 3]

V
###A variety of elastic anomalies in orbital-active nearly-itinerant cobalt vanadate spinel|Tadataka Watanabe,Shogo Yamada,Rui Koborinai,Takuro Katsufuji###
(455421, 455421)
 Furthermore, above T<missing VAR>C, the sensitivemagnetic-field response of the elastic moduli suggests that, with the negativemagnetoresistance, the magnetic-field-enhanced nearly-itinerant character ofthe V 3d<missing VAR> electrons emerges from the spin-cluster state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[208.0, 165, 'K', 3],[90.0, 95, 'K', 2],[97.0, 50, 'K', 2],[147.0, 2, ',', 2],[200.0, 2, ',', 3]

V
###A variety of elastic anomalies in orbital-active nearly-itinerant cobalt vanadate spinel|Tadataka Watanabe,Shogo Yamada,Rui Koborinai,Takuro Katsufuji###
(455456, 455456)
 This should betriggered by the inter-V-site interactions acting on the orbitally-degenerate3d<missing VAR> electrons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[243.0, 165, 'K', 4],[55.0, 95, 'K', 1],[62.0, 50, 'K', 1],[112.0, 2, ',', 1],[165.0, 2, ',', 2]

In
###A variety of elastic anomalies in orbital-active nearly-itinerant cobalt vanadate spinel|Tadataka Watanabe,Shogo Yamada,Rui Koborinai,Takuro Katsufuji###
(455479, 455479)
 In the ferrimagnetic phase below T<missing VAR>C, the elastic moduliexhibit distinct anomalies at T<missing VAR>1sim 95 K and T<missing VAR>2sim 50 K, with a signchange of the magnetoresistance at T<missing VAR>1 (positive below T<missing VAR>1) and anenhancement of the positive magnetoresistance below T<missing VAR>2, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[266.0, 165, 'K', 5],[32.0, 95, 'K', 0],[39.0, 50, 'K', 0],[89.0, 2, ',', 0],[142.0, 2, ',', 1]

C
###A variety of elastic anomalies in orbital-active nearly-itinerant cobalt vanadate spinel|Tadataka Watanabe,Shogo Yamada,Rui Koborinai,Takuro Katsufuji###
(455490, 455490)
 In the ferrimagnetic phase below T<missing VAR>C, the elastic moduliexhibit distinct anomalies at T<missing VAR>1sim 95 K and T<missing VAR>2sim 50 K, with a signchange of the magnetoresistance at T<missing VAR>1 (positive below T<missing VAR>1) and anenhancement of the positive magnetoresistance below T<missing VAR>2, respectively.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[277.0, 165, 'K', 5],[21.0, 95, 'K', 0],[28.0, 50, 'K', 0],[78.0, 2, ',', 0],[131.0, 2, ',', 1]

C
###A variety of elastic anomalies in orbital-active nearly-itinerant cobalt vanadate spinel|Tadataka Watanabe,Shogo Yamada,Rui Koborinai,Takuro Katsufuji###
(455582, 455582)
 Theseobservations below T<missing VAR>C suggest the successive occurrence of an orbital glassyorder at T<missing VAR>1 and a structural phase transition at T<missing VAR>2, where the ratherlocalized character of the V 3d<missing VAR> electrons evolves below T<missing VAR>1 and is furtherenhanced below T<missing VAR>2.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[369.0, 165, 'K', 6],[71.0, 95, 'K', 1],[64.0, 50, 'K', 1],[14.0, 2, ',', 1],[39.0, 2, ',', 0]

V
###A variety of elastic anomalies in orbital-active nearly-itinerant cobalt vanadate spinel|Tadataka Watanabe,Shogo Yamada,Rui Koborinai,Takuro Katsufuji###
(455639, 455639)
 Theseobservations below T<missing VAR>C suggest the successive occurrence of an orbital glassyorder at T<missing VAR>1 and a structural phase transition at T<missing VAR>2, where the ratherlocalized character of the V 3d<missing VAR> electrons evolves below T<missing VAR>1 and is furtherenhanced below T<missing VAR>2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[426.0, 165, 'K', 6],[128.0, 95, 'K', 1],[121.0, 50, 'K', 1],[71.0, 2, ',', 1],[18.0, 2, ',', 0]

Co
###Magnetoresistance in Co-hBN-NiFe tunnel junctions enhanced by resonant tunneling through single defects in ultrathin hBN barriers|Pablo U. Asshoff,Jose L. Sambricio,Sergey Slizovskiy,Aidan P. Rooney,Takashi Taniguchi,Kenji Watanabe,Sarah J. Haigh,Vladimir Fal'ko,Irina V. Grigorieva,Ivan J. Vera-Marun###
(455680, 455680)
Magnetoresistance in Co-h<missing VAR>BN-NiFe tunnel junctions enhanced by resonant tunneling through single defects in ultrathin h<missing VAR>BN barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BN
###Magnetoresistance in Co-hBN-NiFe tunnel junctions enhanced by resonant tunneling through single defects in ultrathin hBN barriers|Pablo U. Asshoff,Jose L. Sambricio,Sergey Slizovskiy,Aidan P. Rooney,Takashi Taniguchi,Kenji Watanabe,Sarah J. Haigh,Vladimir Fal'ko,Irina V. Grigorieva,Ivan J. Vera-Marun###
(455683, 455684)
Magnetoresistance in Co-h<missing VAR>BN-NiFe tunnel junctions enhanced by resonant tunneling through single defects in ultrathin h<missing VAR>BN barriers.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiFe
###Magnetoresistance in Co-hBN-NiFe tunnel junctions enhanced by resonant tunneling through single defects in ultrathin hBN barriers|Pablo U. Asshoff,Jose L. Sambricio,Sergey Slizovskiy,Aidan P. Rooney,Takashi Taniguchi,Kenji Watanabe,Sarah J. Haigh,Vladimir Fal'ko,Irina V. Grigorieva,Ivan J. Vera-Marun###
(455686, 455687)
Magnetoresistance in Co-h<missing VAR>BN-NiFe tunnel junctions enhanced by resonant tunneling through single defects in ultrathin h<missing VAR>BN barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BN
###Magnetoresistance in Co-hBN-NiFe tunnel junctions enhanced by resonant tunneling through single defects in ultrathin hBN barriers|Pablo U. Asshoff,Jose L. Sambricio,Sergey Slizovskiy,Aidan P. Rooney,Takashi Taniguchi,Kenji Watanabe,Sarah J. Haigh,Vladimir Fal'ko,Irina V. Grigorieva,Ivan J. Vera-Marun###
(455712, 455713)
Magnetoresistance in Co-h<missing VAR>BN-NiFe tunnel junctions enhanced by resonant tunneling through single defects in ultrathin h<missing VAR>BN barriers.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Magnetoresistance in Co-hBN-NiFe tunnel junctions enhanced by resonant tunneling through single defects in ultrathin hBN barriers|Pablo U. Asshoff,Jose L. Sambricio,Sergey Slizovskiy,Aidan P. Rooney,Takashi Taniguchi,Kenji Watanabe,Sarah J. Haigh,Vladimir Fal'ko,Irina V. Grigorieva,Ivan J. Vera-Marun###
(455727, 455727)
 Hexagonal boron nitride (h<missing VAR>BN) is a prototypical high-quality two-dimensionalinsulator and an ideal material to study tunneling phenomena, as it can beeasily integrated in vertical van der Waals devices.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BN
###Magnetoresistance in Co-hBN-NiFe tunnel junctions enhanced by resonant tunneling through single defects in ultrathin hBN barriers|Pablo U. Asshoff,Jose L. Sambricio,Sergey Slizovskiy,Aidan P. Rooney,Takashi Taniguchi,Kenji Watanabe,Sarah J. Haigh,Vladimir Fal'ko,Irina V. Grigorieva,Ivan J. Vera-Marun###
(455879, 455880)
 Herewe reveal the effect of point defects inevitably present in mechanicallyexfoliated h<missing VAR>BN on the tunnel magnetoresistance of Co-h<missing VAR>BN-NiFe MTJs.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Magnetoresistance in Co-hBN-NiFe tunnel junctions enhanced by resonant tunneling through single defects in ultrathin hBN barriers|Pablo U. Asshoff,Jose L. Sambricio,Sergey Slizovskiy,Aidan P. Rooney,Takashi Taniguchi,Kenji Watanabe,Sarah J. Haigh,Vladimir Fal'ko,Irina V. Grigorieva,Ivan J. Vera-Marun###
(455892, 455892)
 Herewe reveal the effect of point defects inevitably present in mechanicallyexfoliated h<missing VAR>BN on the tunnel magnetoresistance of Co-h<missing VAR>BN-NiFe MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BN
###Magnetoresistance in Co-hBN-NiFe tunnel junctions enhanced by resonant tunneling through single defects in ultrathin hBN barriers|Pablo U. Asshoff,Jose L. Sambricio,Sergey Slizovskiy,Aidan P. Rooney,Takashi Taniguchi,Kenji Watanabe,Sarah J. Haigh,Vladimir Fal'ko,Irina V. Grigorieva,Ivan J. Vera-Marun###
(455895, 455896)
 Herewe reveal the effect of point defects inevitably present in mechanicallyexfoliated h<missing VAR>BN on the tunnel magnetoresistance of Co-h<missing VAR>BN-NiFe MTJs.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiFe
###Magnetoresistance in Co-hBN-NiFe tunnel junctions enhanced by resonant tunneling through single defects in ultrathin hBN barriers|Pablo U. Asshoff,Jose L. Sambricio,Sergey Slizovskiy,Aidan P. Rooney,Takashi Taniguchi,Kenji Watanabe,Sarah J. Haigh,Vladimir Fal'ko,Irina V. Grigorieva,Ivan J. Vera-Marun###
(455898, 455899)
 Herewe reveal the effect of point defects inevitably present in mechanicallyexfoliated h<missing VAR>BN on the tunnel magnetoresistance of Co-h<missing VAR>BN-NiFe MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BN
###Magnetoresistance in Co-hBN-NiFe tunnel junctions enhanced by resonant tunneling through single defects in ultrathin hBN barriers|Pablo U. Asshoff,Jose L. Sambricio,Sergey Slizovskiy,Aidan P. Rooney,Takashi Taniguchi,Kenji Watanabe,Sarah J. Haigh,Vladimir Fal'ko,Irina V. Grigorieva,Ivan J. Vera-Marun###
(456016, 456017)
 The spin polarization of the defectstates is attributed to exchange coupling of a paramagnetic impurity in thefew-atomic-layer thick h<missing VAR>BN to the ferromagnetic electrodes.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BN
###Magnetoresistance in Co-hBN-NiFe tunnel junctions enhanced by resonant tunneling through single defects in ultrathin hBN barriers|Pablo U. Asshoff,Jose L. Sambricio,Sergey Slizovskiy,Aidan P. Rooney,Takashi Taniguchi,Kenji Watanabe,Sarah J. Haigh,Vladimir Fal'ko,Irina V. Grigorieva,Ivan J. Vera-Marun###
(456074, 456075)
 Our findings should be takeninto account in analyzing tunneling processes in h<missing VAR>BN-based magnetic devices.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BN
###Magnetoresistance in Co-hBN-NiFe tunnel junctions enhanced by resonant tunneling through single defects in ultrathin hBN barriers|Pablo U. Asshoff,Jose L. Sambricio,Sergey Slizovskiy,Aidan P. Rooney,Takashi Taniguchi,Kenji Watanabe,Sarah J. Haigh,Vladimir Fal'ko,Irina V. Grigorieva,Ivan J. Vera-Marun###
(456109, 456110)
More generally, our study shows the potential of using atomically thin h<missing VAR>BNbarriers with defects to engineer the magnetoresistance of MTJs and to achievespin filtering, opening the door towards exploiting the spin degree of freedomin current studies of point defects as quantum emitters.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Distinguishing antiferromagnetic spin sublattices via the spin Seebeck effect|Yongming Luo,Changjiang Liu,Hilal Saglam,Yi Li,Wei Zhang,Steven S. -L. Zhang,John E. Pearson,Brandon Fisher,Anand Bhattacharya,Axel Hoffmann###
(456383, 456383)
 So far, the existing read-out techniques such asanisotropic magnetoresistance, tunneling anisotropic magnetoresistance, andspin-Hall magnetoresistance, are even functions of sublattice magnetization andthus allow us to detect different orientations of the Neel order forantiferromagnets with multiple easy axes.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Distinguishing antiferromagnetic spin sublattices via the spin Seebeck effect|Yongming Luo,Changjiang Liu,Hilal Saglam,Yi Li,Wei Zhang,Steven S. -L. Zhang,John E. Pearson,Brandon Fisher,Anand Bhattacharya,Axel Hoffmann###
(456402, 456402)
 In contrast direct electricaldetection of oppositely oriented spin states along the same easy axes (e.g.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Distinguishing antiferromagnetic spin sublattices via the spin Seebeck effect|Yongming Luo,Changjiang Liu,Hilal Saglam,Yi Li,Wei Zhang,Steven S. -L. Zhang,John E. Pearson,Brandon Fisher,Anand Bhattacharya,Axel Hoffmann###
(456476, 456476)
 In this study, using spin Seebeckeffect, we report the electrical detection of the two sublattices in a uniaxialantiferromagnet Cr2O3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr2O3
###Distinguishing antiferromagnetic spin sublattices via the spin Seebeck effect|Yongming Luo,Changjiang Liu,Hilal Saglam,Yi Li,Wei Zhang,Steven S. -L. Zhang,John E. Pearson,Brandon Fisher,Anand Bhattacharya,Axel Hoffmann###
(456520, 456523)
 In this study, using spin Seebeckeffect, we report the electrical detection of the two sublattices in a uniaxialantiferromagnet Cr2O3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Distinguishing antiferromagnetic spin sublattices via the spin Seebeck effect|Yongming Luo,Changjiang Liu,Hilal Saglam,Yi Li,Wei Zhang,Steven S. -L. Zhang,John E. Pearson,Brandon Fisher,Anand Bhattacharya,Axel Hoffmann###
(456591, 456591)
 We find the rotational symmetry and hysteresis behaviorof the spin Seebeck signals measured at the top and bottom surface reflect thedierction of the surface sublattice moments, but not the Neel order or thenet moment in the bulk.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt/Co
###Effects of transition-metal spacers on the spin-orbit torques, spin Hall magnetoresistance, and magnetic anisotropy of Pt/Co bilayers|Can Onur Avci,Geoffrey S. D. Beach,Pietro Gambardella###
(456756, 456758)
Effects of transition-metal spacers on the spin-orbit torques, spin Hall magnetoresistance, and magnetic anisotropy of Pt/Co bilayers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[16.0, 0.5, 'nm', 1],[207.0, 3, 'd', 3],[209.0, 4, 'd', 3],[213.0, 5, 'd', 3]

Ti
###Effects of transition-metal spacers on the spin-orbit torques, spin Hall magnetoresistance, and magnetic anisotropy of Pt/Co bilayers|Can Onur Avci,Geoffrey S. D. Beach,Pietro Gambardella###
(456783, 456783)
 We studied the effect of inserting 0.5 nm-thick spacer layers (Ti, V, Cr, Mo,W) at the Pt/Co interface on the spin-orbit torques, Hall effect,magnetoresistance, saturation magnetization, and magnetic anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 0.5, 'nm', 0],[182.0, 3, 'd', 2],[184.0, 4, 'd', 2],[188.0, 5, 'd', 2]

V
###Effects of transition-metal spacers on the spin-orbit torques, spin Hall magnetoresistance, and magnetic anisotropy of Pt/Co bilayers|Can Onur Avci,Geoffrey S. D. Beach,Pietro Gambardella###
(456786, 456786)
 We studied the effect of inserting 0.5 nm-thick spacer layers (Ti, V, Cr, Mo,W) at the Pt/Co interface on the spin-orbit torques, Hall effect,magnetoresistance, saturation magnetization, and magnetic anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 0.5, 'nm', 0],[179.0, 3, 'd', 2],[181.0, 4, 'd', 2],[185.0, 5, 'd', 2]

Cr
###Effects of transition-metal spacers on the spin-orbit torques, spin Hall magnetoresistance, and magnetic anisotropy of Pt/Co bilayers|Can Onur Avci,Geoffrey S. D. Beach,Pietro Gambardella###
(456789, 456789)
 We studied the effect of inserting 0.5 nm-thick spacer layers (Ti, V, Cr, Mo,W) at the Pt/Co interface on the spin-orbit torques, Hall effect,magnetoresistance, saturation magnetization, and magnetic anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 0.5, 'nm', 0],[176.0, 3, 'd', 2],[178.0, 4, 'd', 2],[182.0, 5, 'd', 2]

Mo
###Effects of transition-metal spacers on the spin-orbit torques, spin Hall magnetoresistance, and magnetic anisotropy of Pt/Co bilayers|Can Onur Avci,Geoffrey S. D. Beach,Pietro Gambardella###
(456792, 456792)
 We studied the effect of inserting 0.5 nm-thick spacer layers (Ti, V, Cr, Mo,W) at the Pt/Co interface on the spin-orbit torques, Hall effect,magnetoresistance, saturation magnetization, and magnetic anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 0.5, 'nm', 0],[173.0, 3, 'd', 2],[175.0, 4, 'd', 2],[179.0, 5, 'd', 2]

W
###Effects of transition-metal spacers on the spin-orbit torques, spin Hall magnetoresistance, and magnetic anisotropy of Pt/Co bilayers|Can Onur Avci,Geoffrey S. D. Beach,Pietro Gambardella###
(456796, 456796)
 We studied the effect of inserting 0.5 nm-thick spacer layers (Ti, V, Cr, Mo,W) at the Pt/Co interface on the spin-orbit torques, Hall effect,magnetoresistance, saturation magnetization, and magnetic anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 0.5, 'nm', 0],[169.0, 3, 'd', 2],[171.0, 4, 'd', 2],[175.0, 5, 'd', 2]

Pt/Co
###Effects of transition-metal spacers on the spin-orbit torques, spin Hall magnetoresistance, and magnetic anisotropy of Pt/Co bilayers|Can Onur Avci,Geoffrey S. D. Beach,Pietro Gambardella###
(456803, 456805)
 We studied the effect of inserting 0.5 nm-thick spacer layers (Ti, V, Cr, Mo,W) at the Pt/Co interface on the spin-orbit torques, Hall effect,magnetoresistance, saturation magnetization, and magnetic anisotropy.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[29.0, 0.5, 'nm', 0],[160.0, 3, 'd', 2],[162.0, 4, 'd', 2],[166.0, 5, 'd', 2]

Pt/Co
###Effects of transition-metal spacers on the spin-orbit torques, spin Hall magnetoresistance, and magnetic anisotropy of Pt/Co bilayers|Can Onur Avci,Geoffrey S. D. Beach,Pietro Gambardella###
(456887, 456889)
 We findthat the damping-like spin-orbit torque decreases substantially for all sampleswith a spacer layer compared to the reference Pt/Co bilayer, consistently withthe opposite sign of the atomic spin-orbit coupling constant of the spacerelements relative to Pt.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[113.0, 0.5, 'nm', 1],[76.0, 3, 'd', 1],[78.0, 4, 'd', 1],[82.0, 5, 'd', 1]

Pt
###Effects of transition-metal spacers on the spin-orbit torques, spin Hall magnetoresistance, and magnetic anisotropy of Pt/Co bilayers|Can Onur Avci,Geoffrey S. D. Beach,Pietro Gambardella###
(456932, 456932)
 We findthat the damping-like spin-orbit torque decreases substantially for all sampleswith a spacer layer compared to the reference Pt/Co bilayer, consistently withthe opposite sign of the atomic spin-orbit coupling constant of the spacerelements relative to Pt.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 0.5, 'nm', 1],[33.0, 3, 'd', 1],[35.0, 4, 'd', 1],[39.0, 5, 'd', 1]

V
###Effects of transition-metal spacers on the spin-orbit torques, spin Hall magnetoresistance, and magnetic anisotropy of Pt/Co bilayers|Can Onur Avci,Geoffrey S. D. Beach,Pietro Gambardella###
(456985, 456985)
 The reduction of the damping-like torque is monotonicwith atomic number for the isoelectronic 3d, 4d, and 5d elements, with theexception of V that has a stronger effect than Cr.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[211.0, 0.5, 'nm', 2],[20.0, 3, 'd', 0],[18.0, 4, 'd', 0],[14.0, 5, 'd', 0]

Cr
###Effects of transition-metal spacers on the spin-orbit torques, spin Hall magnetoresistance, and magnetic anisotropy of Pt/Co bilayers|Can Onur Avci,Geoffrey S. D. Beach,Pietro Gambardella###
(456999, 456999)
 The reduction of the damping-like torque is monotonicwith atomic number for the isoelectronic 3d, 4d, and 5d elements, with theexception of V that has a stronger effect than Cr.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[225.0, 0.5, 'nm', 2],[34.0, 3, 'd', 0],[32.0, 4, 'd', 0],[28.0, 5, 'd', 0]

Pt/Co
###Effects of transition-metal spacers on the spin-orbit torques, spin Hall magnetoresistance, and magnetic anisotropy of Pt/Co bilayers|Can Onur Avci,Geoffrey S. D. Beach,Pietro Gambardella###
(457053, 457055)
 The field-like spin-orbittorque almost vanishes for all spacer layers irrespective of their composition,suggesting that this torque predominantly originates at the Pt/Co interface.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[279.0, 0.5, 'nm', 3],[88.0, 3, 'd', 1],[86.0, 4, 'd', 1],[82.0, 5, 'd', 1]

Pr0.6Sr0.4Co1-y
###Sharp steps in magnetization, magnetoresistance and magnetostriction in Pr0.6Sr0.4Co1-yGayO3|A. Chanda,R. Mahendiran###
(457237, 457244)
Sharp steps in magnetization, magnetoresistance and magnetostriction in Pr0.6Sr0.4Co1-yGayO3.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[131.0, 7, 'T', 3],[147.0, 2, 'percentage', 3],[153.0, 0, 'to', 3],[164.0, 0.3, 'at', 3],[165.0, 10, 'K', 3],[180.0, 10, 'K', 4],[236.0, 0.2, 'and', 5],[251.0, 3, 'K', 5],[298.0, 4, 'K', 5]

O3
###Sharp steps in magnetization, magnetoresistance and magnetostriction in Pr0.6Sr0.4Co1-yGayO3|A. Chanda,R. Mahendiran###
(457246, 457247)
Sharp steps in magnetization, magnetoresistance and magnetostriction in Pr0.6Sr0.4Co1-yGayO3.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 7, 'T', 3],[144.0, 2, 'percentage', 3],[150.0, 0, 'to', 3],[161.0, 0.3, 'at', 3],[162.0, 10, 'K', 3],[177.0, 10, 'K', 4],[233.0, 0.2, 'and', 5],[248.0, 3, 'K', 5],[295.0, 4, 'K', 5]

Ga
###Sharp steps in magnetization, magnetoresistance and magnetostriction in Pr0.6Sr0.4Co1-yGayO3|A. Chanda,R. Mahendiran###
(457260, 457260)
 We report the effect of Ga substitution on magnetization, magnetoresistance,and magnetostriction in polycrystalline Pr0.6Sr0.4Co1-yGayO3 (y<missing VAR>0.0-0.3)samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 7, 'T', 2],[131.0, 2, 'percentage', 2],[137.0, 0, 'to', 2],[148.0, 0.3, 'at', 2],[149.0, 10, 'K', 2],[164.0, 10, 'K', 3],[220.0, 0.2, 'and', 4],[235.0, 3, 'K', 4],[282.0, 4, 'K', 4]

Pr0.6Sr0.4Co1-y
###Sharp steps in magnetization, magnetoresistance and magnetostriction in Pr0.6Sr0.4Co1-yGayO3|A. Chanda,R. Mahendiran###
(457281, 457288)
 We report the effect of Ga substitution on magnetization, magnetoresistance,and magnetostriction in polycrystalline Pr0.6Sr0.4Co1-yGayO3 (y<missing VAR>0.0-0.3)samples.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[87.0, 7, 'T', 2],[103.0, 2, 'percentage', 2],[109.0, 0, 'to', 2],[120.0, 0.3, 'at', 2],[121.0, 10, 'K', 2],[136.0, 10, 'K', 3],[192.0, 0.2, 'and', 4],[207.0, 3, 'K', 4],[254.0, 4, 'K', 4]

O3
###Sharp steps in magnetization, magnetoresistance and magnetostriction in Pr0.6Sr0.4Co1-yGayO3|A. Chanda,R. Mahendiran###
(457290, 457291)
 We report the effect of Ga substitution on magnetization, magnetoresistance,and magnetostriction in polycrystalline Pr0.6Sr0.4Co1-yGayO3 (y<missing VAR>0.0-0.3)samples.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 7, 'T', 2],[100.0, 2, 'percentage', 2],[106.0, 0, 'to', 2],[117.0, 0.3, 'at', 2],[118.0, 10, 'K', 2],[133.0, 10, 'K', 3],[189.0, 0.2, 'and', 4],[204.0, 3, 'K', 4],[251.0, 4, 'K', 4]

Ga3
###Sharp steps in magnetization, magnetoresistance and magnetostriction in Pr0.6Sr0.4Co1-yGayO3|A. Chanda,R. Mahendiran###
(457316, 457317)
 Upon substitution of the non-magnetic Ga3 cation for magnetic Co3,the low-temperature ground state transforms from ferromagnetic metallic for y<missing VAR> 0 to cluster glass semiconductor for y<missing VAR>  0.2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 7, 'T', 1],[74.0, 2, 'percentage', 1],[80.0, 0, 'to', 1],[91.0, 0.3, 'at', 1],[92.0, 10, 'K', 1],[107.0, 10, 'K', 2],[163.0, 0.2, 'and', 3],[178.0, 3, 'K', 3],[225.0, 4, 'K', 3]

Co3
###Sharp steps in magnetization, magnetoresistance and magnetostriction in Pr0.6Sr0.4Co1-yGayO3|A. Chanda,R. Mahendiran###
(457325, 457326)
 Upon substitution of the non-magnetic Ga3 cation for magnetic Co3,the low-temperature ground state transforms from ferromagnetic metallic for y<missing VAR> 0 to cluster glass semiconductor for y<missing VAR>  0.2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 7, 'T', 1],[65.0, 2, 'percentage', 1],[71.0, 0, 'to', 1],[82.0, 0.3, 'at', 1],[83.0, 10, 'K', 1],[98.0, 10, 'K', 2],[154.0, 0.2, 'and', 3],[169.0, 3, 'K', 3],[216.0, 4, 'K', 3]

In
###Effect of disorder on the transverse magnetoresistance of Weyl semimetals|Ya. I. Rodionov,K. I. Kugel,B. A. Aronzon,Franco Nori###
(457917, 457917)
 In contrast to the oversimplified case of thedelta-correlated disorder, the long-range impurity potential (including thatof Coulomb impurities) introduces an additional length scale, which changes thegeometry and physics of the problem.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe3Sn2
###Anomalous planar Hall effect in a kagome ferromagnet|Neeraj Kumar,Y. Soh,Yihao Wang,Junbo Li,Y. Xiong###
(458277, 458280)
 We investigated the anisotropic magnetoresistance andplanar Hall effect in Fe3Sn2, which has a kagome lattice and has beenpredicted to be a type II Weyl metal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Anomalous planar Hall effect in a kagome ferromagnet|Neeraj Kumar,Y. Soh,Yihao Wang,Junbo Li,Y. Xiong###
(458310, 458311)
 We investigated the anisotropic magnetoresistance andplanar Hall effect in Fe3Sn2, which has a kagome lattice and has beenpredicted to be a type II Weyl metal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe3Sn2
###Anomalous planar Hall effect in a kagome ferromagnet|Neeraj Kumar,Y. Soh,Yihao Wang,Junbo Li,Y. Xiong###
(458430, 458433)
 The field antisymmetric planar Hall effect has a 3-foldrotational symmetry, distinctively different from the symmetric planar Halleffect, but consistent with the 3-fold rotational degeneracy of themagnetization in Fe3Sn2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe3Sn2
###Anomalous planar Hall effect in a kagome ferromagnet|Neeraj Kumar,Y. Soh,Yihao Wang,Junbo Li,Y. Xiong###
(458540, 458543)
 We attribute theantisymmetric planar Hall effect to the topological nature of Fe3Sn2 dueto the presence of Weyl II nodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Anomalous planar Hall effect in a kagome ferromagnet|Neeraj Kumar,Y. Soh,Yihao Wang,Junbo Li,Y. Xiong###
(458558, 458559)
 We attribute theantisymmetric planar Hall effect to the topological nature of Fe3Sn2 dueto the presence of Weyl II nodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe3GeTe2/Fe3GeTe2
###Observation of plateau-like magnetoresistance in twisted Fe3GeTe2/Fe3GeTe2 junction|Junghyun Kim,Suhan Son,Matthew. J. Coak,Inho Hwang,Youjin Lee,Kaixuan Zhang,Je-Geun Park###
(458610, 458620)
Observation of plateau-like magnetoresistance in twisted Fe3GeTe2/Fe3GeTe2 junction.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[282.0, 0.05, '%', 6]

W
###Observation of plateau-like magnetoresistance in twisted Fe3GeTe2/Fe3GeTe2 junction|Junghyun Kim,Suhan Son,Matthew. J. Coak,Inho Hwang,Youjin Lee,Kaixuan Zhang,Je-Geun Park###
(458641, 458641)
 Controlling the stacking of van der Waals (vdW) materials is found to produceexciting new findings, since hetero- or homo- structures have added the diversepossibility of assembly and manipulated functionalities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[261.0, 0.05, '%', 5]

W
###Observation of plateau-like magnetoresistance in twisted Fe3GeTe2/Fe3GeTe2 junction|Junghyun Kim,Suhan Son,Matthew. J. Coak,Inho Hwang,Youjin Lee,Kaixuan Zhang,Je-Geun Park###
(458726, 458726)
 However, so far, thehomostructure with a twisted angle based on the magnetic vdW materials remainsunexplored.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[176.0, 0.05, '%', 4]

W
###Observation of plateau-like magnetoresistance in twisted Fe3GeTe2/Fe3GeTe2 junction|Junghyun Kim,Suhan Son,Matthew. J. Coak,Inho Hwang,Youjin Lee,Kaixuan Zhang,Je-Geun Park###
(458750, 458750)
 Here, we achieved a twisted magnetic vdW Fe3GeTe2/Fe3GeTe2 junctionwith broken crystalline symmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 0.05, '%', 3]

Fe3GeTe2/Fe3GeTe2
###Observation of plateau-like magnetoresistance in twisted Fe3GeTe2/Fe3GeTe2 junction|Junghyun Kim,Suhan Son,Matthew. J. Coak,Inho Hwang,Youjin Lee,Kaixuan Zhang,Je-Geun Park###
(458752, 458762)
 Here, we achieved a twisted magnetic vdW Fe3GeTe2/Fe3GeTe2 junctionwith broken crystalline symmetry.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[140.0, 0.05, '%', 3]

W
###Observation of plateau-like magnetoresistance in twisted Fe3GeTe2/Fe3GeTe2 junction|Junghyun Kim,Suhan Son,Matthew. J. Coak,Inho Hwang,Youjin Lee,Kaixuan Zhang,Je-Geun Park###
(458785, 458785)
 A clean and metallic vdW junction isevidenced by the temperature-dependent resistance and the linear I-V curve.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 0.05, '%', 2]

I
###Observation of plateau-like magnetoresistance in twisted Fe3GeTe2/Fe3GeTe2 junction|Junghyun Kim,Suhan Son,Matthew. J. Coak,Inho Hwang,Youjin Lee,Kaixuan Zhang,Je-Geun Park###
(458810, 458810)
 A clean and metallic vdW junction isevidenced by the temperature-dependent resistance and the linear I-V curve.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 0.05, '%', 2]

V
###Observation of plateau-like magnetoresistance in twisted Fe3GeTe2/Fe3GeTe2 junction|Junghyun Kim,Suhan Son,Matthew. J. Coak,Inho Hwang,Youjin Lee,Kaixuan Zhang,Je-Geun Park###
(458812, 458812)
 A clean and metallic vdW junction isevidenced by the temperature-dependent resistance and the linear I-V curve.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 0.05, '%', 2]

F
###Observation of plateau-like magnetoresistance in twisted Fe3GeTe2/Fe3GeTe2 junction|Junghyun Kim,Suhan Son,Matthew. J. Coak,Inho Hwang,Youjin Lee,Kaixuan Zhang,Je-Geun Park###
(458824, 458824)
Unlike the pristine FGT, a plateau-like magnetoresistance (PMR) is observed inthe magnetotransport of our homojunction due to the antiparallel magneticconfigurations of the two FGT layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 0.05, '%', 1]

P
###Observation of plateau-like magnetoresistance in twisted Fe3GeTe2/Fe3GeTe2 junction|Junghyun Kim,Suhan Son,Matthew. J. Coak,Inho Hwang,Youjin Lee,Kaixuan Zhang,Je-Geun Park###
(458838, 458838)
Unlike the pristine FGT, a plateau-like magnetoresistance (PMR) is observed inthe magnetotransport of our homojunction due to the antiparallel magneticconfigurations of the two FGT layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 0.05, '%', 1]

F
###Observation of plateau-like magnetoresistance in twisted Fe3GeTe2/Fe3GeTe2 junction|Junghyun Kim,Suhan Son,Matthew. J. Coak,Inho Hwang,Youjin Lee,Kaixuan Zhang,Je-Geun Park###
(458879, 458879)
Unlike the pristine FGT, a plateau-like magnetoresistance (PMR) is observed inthe magnetotransport of our homojunction due to the antiparallel magneticconfigurations of the two FGT layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 0.05, '%', 1]

P
###Observation of plateau-like magnetoresistance in twisted Fe3GeTe2/Fe3GeTe2 junction|Junghyun Kim,Suhan Son,Matthew. J. Coak,Inho Hwang,Youjin Lee,Kaixuan Zhang,Je-Geun Park###
(458888, 458888)
 The PMR ratio is found to be 0.05% andgets monotonically enhanced as temperature decreases like a metallic giantmagnetoresistance (GMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 0.05, '%', 0]

P
###Observation of plateau-like magnetoresistance in twisted Fe3GeTe2/Fe3GeTe2 junction|Junghyun Kim,Suhan Son,Matthew. J. Coak,Inho Hwang,Youjin Lee,Kaixuan Zhang,Je-Geun Park###
(458944, 458944)
 Such a tiny PMR ratio is at least three orders ofmagnitude smaller than the tunneling magnetoresistance (TMR) ratio, justifyingour clean metallic junction without a spacer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 0.05, '%', 1]

W
###Observation of plateau-like magnetoresistance in twisted Fe3GeTe2/Fe3GeTe2 junction|Junghyun Kim,Suhan Son,Matthew. J. Coak,Inho Hwang,Youjin Lee,Kaixuan Zhang,Je-Geun Park###
(459039, 459039)
 Our findings demonstrate thefeasibility of the controllable homostructure and shed light on futurespintronics using magnetic vdW materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 0.05, '%', 2]

Cu
###Tuneable Magneto-Resistance by Severe Plastic Deformation|Stefan Wurster,Lukas Weissitsch,Martin Stueckler,Peter Knoll,Heinz Krenn,Reinhard Pippan,Andrea Bachmaier###
(459094, 459094)
 Bulk metallic samples were synthesized from different binary powder mixturesconsisting of elemental Cu, Co, and Fe using severe plastic deformation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[355.0, 3.5, '%', 10]

Co
###Tuneable Magneto-Resistance by Severe Plastic Deformation|Stefan Wurster,Lukas Weissitsch,Martin Stueckler,Peter Knoll,Heinz Krenn,Reinhard Pippan,Andrea Bachmaier###
(459097, 459097)
 Bulk metallic samples were synthesized from different binary powder mixturesconsisting of elemental Cu, Co, and Fe using severe plastic deformation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[352.0, 3.5, '%', 10]

Fe
###Tuneable Magneto-Resistance by Severe Plastic Deformation|Stefan Wurster,Lukas Weissitsch,Martin Stueckler,Peter Knoll,Heinz Krenn,Reinhard Pippan,Andrea Bachmaier###
(459102, 459102)
 Bulk metallic samples were synthesized from different binary powder mixturesconsisting of elemental Cu, Co, and Fe using severe plastic deformation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[347.0, 3.5, '%', 10]

Cu
###Tuneable Magneto-Resistance by Severe Plastic Deformation|Stefan Wurster,Lukas Weissitsch,Martin Stueckler,Peter Knoll,Heinz Krenn,Reinhard Pippan,Andrea Bachmaier###
(459134, 459134)
 Smallparticles of the ferromagnetic phase originate in the conductive Cu phase,either by incomplete dissolution or by segregation phenomena during thedeformation process.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[315.0, 3.5, '%', 9]

Co
###Tuneable Magneto-Resistance by Severe Plastic Deformation|Stefan Wurster,Lukas Weissitsch,Martin Stueckler,Peter Knoll,Heinz Krenn,Reinhard Pippan,Andrea Bachmaier###
(459478, 459478)
 3.5%was found for a bulk specimen containing an approximately equiatomic fractionof Co and Cu.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 3.5, '%', 0]

Cu
###Tuneable Magneto-Resistance by Severe Plastic Deformation|Stefan Wurster,Lukas Weissitsch,Martin Stueckler,Peter Knoll,Heinz Krenn,Reinhard Pippan,Andrea Bachmaier###
(459482, 459482)
 3.5%was found for a bulk specimen containing an approximately equiatomic fractionof Co and Cu.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 3.5, '%', 0]

(H)
###Incoherent transport across the strange metal regime of highly overdoped cuprates|J. Ayres,M. Berben,M. Culo,Y. -T. Hsu,E. van Heumen,Y. Huang,J. Zaanen,T. Kondo,T. Takeuchi,J. R. Cooper,C. Putzke,S. Friedemann,A. Carrington,N. E. Hussey###
(459579, 459581)
 Strange metals possess highly unconventional transport characteristics, suchas a linear-in-temperature (T) resistivity, an inverse Hall angle that variesas T<missing VAR>2 and a linear-in-field (H) magnetoresistance.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Incoherent transport across the strange metal regime of highly overdoped cuprates|J. Ayres,M. Berben,M. Culo,Y. -T. Hsu,E. van Heumen,Y. Huang,J. Zaanen,T. Kondo,T. Takeuchi,J. R. Cooper,C. Putzke,S. Friedemann,A. Carrington,N. E. Hussey###
(459737, 459737)
 At all dopings, themagnetoresistance exhibits quadrature scaling and becomes linear at high H/T<missing VAR>ratios.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Incoherent transport across the strange metal regime of highly overdoped cuprates|J. Ayres,M. Berben,M. Culo,Y. -T. Hsu,E. van Heumen,Y. Huang,J. Zaanen,T. Kondo,T. Takeuchi,J. R. Cooper,C. Putzke,S. Friedemann,A. Carrington,N. E. Hussey###
(459765, 459765)
 At all dopings, themagnetoresistance exhibits quadrature scaling and becomes linear at high H/T<missing VAR>ratios.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiMnSb
###Unidirectional magnetoresistance and spin-orbit torque in NiMnSb|J. Železný,Z. Fang,K. Olejník,J. Patchett,F. Gerhard,C. Gould,L. W. Molenkamp,C. Gomez-Olivella,J. Zemen,T. Tichý,T. Jungwirth,C. Ciccarelli###
(459932, 459934)
Unidirectional magnetoresistance and spin-orbit torque in NiMnSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiMnSb
###Unidirectional magnetoresistance and spin-orbit torque in NiMnSb|J. Železný,Z. Fang,K. Olejník,J. Patchett,F. Gerhard,C. Gould,L. W. Molenkamp,C. Gomez-Olivella,J. Zemen,T. Tichý,T. Jungwirth,C. Ciccarelli###
(460043, 460045)
 Herewe present a theoretical and experimental study of spin-orbit torque andunidirectional magnetoresistance in a model room-temperature ferromagnet NiMnSbwith inversion asymmetry in the bulk of this half-heusler crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiMnSb
###Unidirectional magnetoresistance and spin-orbit torque in NiMnSb|J. Železný,Z. Fang,K. Olejník,J. Patchett,F. Gerhard,C. Gould,L. W. Molenkamp,C. Gomez-Olivella,J. Zemen,T. Tichý,T. Jungwirth,C. Ciccarelli###
(460373, 460375)
 We use the theoretical results to analyze our measurements of theon-resonance and off-resonance mixing signals in microbar devices fabricatedfrom an epitaxial NiMnSb film along different crystal directions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiMnSb
###Unidirectional magnetoresistance and spin-orbit torque in NiMnSb|J. Železný,Z. Fang,K. Olejník,J. Patchett,F. Gerhard,C. Gould,L. W. Molenkamp,C. Gomez-Olivella,J. Zemen,T. Tichý,T. Jungwirth,C. Ciccarelli###
(460418, 460420)
 Based on theanalysis we extract an experimental estimate of the unidirectionalmagnetoresistance in NiMnSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn3Si2Te6
###Strange electrical transport: Colossal magnetoresistance via avoiding fully polarized magnetization in ferrimagnetic insulator Mn3Si2Te6|Yifei Ni,Hengdi Zhao,Yu Zhang,Bing Hu,Itamar Kimchi,Gang Cao###
(460457, 460462)
Strange electrical transport Colossal magnetoresistance via avoiding fully polarized magnetization in ferrimagnetic insulator Mn3Si2Te6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0.2727272727272727,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5454545454545454,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 78, 'K', 3],[115.0, 7, 'orders', 4],[133.0, 9, 'Tesla', 4],[154.0, 130, 'K', 4],[256.0, 13, 'Tesla', 6]

Mn3Si2Te6
###Strange electrical transport: Colossal magnetoresistance via avoiding fully polarized magnetization in ferrimagnetic insulator Mn3Si2Te6|Yifei Ni,Hengdi Zhao,Yu Zhang,Bing Hu,Itamar Kimchi,Gang Cao###
(460544, 460549)
 The stoichiometric Mn3Si2Te6 is an insulator featuringa ferrimagnetic transition at 78 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0.2727272727272727,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5454545454545454,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 78, 'K', 0],[28.0, 7, 'orders', 1],[46.0, 9, 'Tesla', 1],[67.0, 130, 'K', 1],[169.0, 13, 'Tesla', 3]

Mn
###Strange electrical transport: Colossal magnetoresistance via avoiding fully polarized magnetization in ferrimagnetic insulator Mn3Si2Te6|Yifei Ni,Hengdi Zhao,Yu Zhang,Bing Hu,Itamar Kimchi,Gang Cao###
(460728, 460728)
The anisotropy field separating the easy and hard axes is 13 Tesla, unexpectedfor the Mn ions with nominally negligible orbital momentum and spin-orbitinteractions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 78, 'K', 3],[151.0, 7, 'orders', 2],[133.0, 9, 'Tesla', 2],[112.0, 130, 'K', 2],[10.0, 13, 'Tesla', 0]

Mn3Si2Te6
###Strange electrical transport: Colossal magnetoresistance via avoiding fully polarized magnetization in ferrimagnetic insulator Mn3Si2Te6|Yifei Ni,Hengdi Zhao,Yu Zhang,Bing Hu,Itamar Kimchi,Gang Cao###
(460785, 460790)
 Double exchange and Jahn-Teller distortions that drive thehole-doped manganites do not exist in Mn3Si2Te6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0.2727272727272727,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5454545454545454,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[218.0, 78, 'K', 4],[208.0, 7, 'orders', 3],[190.0, 9, 'Tesla', 3],[169.0, 130, 'K', 3],[67.0, 13, 'Tesla', 1]

B0.15
###Strong magnetoresistance in a graphene Corbino disk at low magnetic fields|Masahiro Kamada,Vanessa Gall,Jayanta Sarkar,Manohar Kumar,Antti Laitinen,Igor Gornyi,Pertti Hakonen###
(460889, 460890)
 We have measured magnetoresistance of suspended graphene in the Corbinogeometry at magnetic fields up to B0.15,T<missing VAR>, i.e.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 2, '%', 2],[102.0, 30, ',', 2],[347.0, 1, ',', 6],[354.0, 4, ',', 6],[395.0, 0.15, ',', 6]

(B)
###Strong magnetoresistance in a graphene Corbino disk at low magnetic fields|Masahiro Kamada,Vanessa Gall,Jayanta Sarkar,Manohar Kumar,Antti Laitinen,Igor Gornyi,Pertti Hakonen###
(460934, 460936)
 The low-temperature relativemagnetotoresistance [R<missing VAR>(B)-R<missing VAR>(0)]/R<missing VAR>(0) amounts to 4000 B2%  at the Diracpoint (B in Tesla), with a quite weak temperature dependence below 30,K.
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 2, '%', 0],[56.0, 30, ',', 0],[301.0, 1, ',', 4],[308.0, 4, ',', 4],[349.0, 0.15, ',', 4]

B
###Strong magnetoresistance in a graphene Corbino disk at low magnetic fields|Masahiro Kamada,Vanessa Gall,Jayanta Sarkar,Manohar Kumar,Antti Laitinen,Igor Gornyi,Pertti Hakonen###
(460955, 460955)
 The low-temperature relativemagnetotoresistance [R<missing VAR>(B)-R<missing VAR>(0)]/R<missing VAR>(0) amounts to 4000 B2%  at the Diracpoint (B in Tesla), with a quite weak temperature dependence below 30,K.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[1.0, 2, '%', 0],[37.0, 30, ',', 0],[282.0, 1, ',', 4],[289.0, 4, ',', 4],[330.0, 0.15, ',', 4]

B
###Strong magnetoresistance in a graphene Corbino disk at low magnetic fields|Masahiro Kamada,Vanessa Gall,Jayanta Sarkar,Manohar Kumar,Antti Laitinen,Igor Gornyi,Pertti Hakonen###
(460970, 460970)
 The low-temperature relativemagnetotoresistance [R<missing VAR>(B)-R<missing VAR>(0)]/R<missing VAR>(0) amounts to 4000 B2%  at the Diracpoint (B in Tesla), with a quite weak temperature dependence below 30,K.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 2, '%', 0],[22.0, 30, ',', 0],[267.0, 1, ',', 4],[274.0, 4, ',', 4],[315.0, 0.15, ',', 4]

K
###Strong magnetoresistance in a graphene Corbino disk at low magnetic fields|Masahiro Kamada,Vanessa Gall,Jayanta Sarkar,Manohar Kumar,Antti Laitinen,Igor Gornyi,Pertti Hakonen###
(460994, 460994)
 The low-temperature relativemagnetotoresistance [R<missing VAR>(B)-R<missing VAR>(0)]/R<missing VAR>(0) amounts to 4000 B2%  at the Diracpoint (B in Tesla), with a quite weak temperature dependence below 30,K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 2, '%', 0],[2.0, 30, ',', 0],[243.0, 1, ',', 4],[250.0, 4, ',', 4],[291.0, 0.15, ',', 4]

K
###Strong magnetoresistance in a graphene Corbino disk at low magnetic fields|Masahiro Kamada,Vanessa Gall,Jayanta Sarkar,Manohar Kumar,Antti Laitinen,Igor Gornyi,Pertti Hakonen###
(461246, 461246)
 Thecurrent noise of our device amounts to 10-23 A2/sqrttextrmHz at1,k<missing VAR>Hz at 4,K, which corresponds to a magnetic field sensitivity of 60nT/sqrttextrmHz in a background field of 0.15,T<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[290.0, 2, '%', 4],[254.0, 30, ',', 4],[9.0, 1, ',', 0],[2.0, 4, ',', 0],[39.0, 0.15, ',', 0]

O
###Observation of the Orbital Rashba-Edelstein Magnetoresistance|Shilei Ding,Zhongyu Liang,Dongwook Go,Chao Yun,Mingzhu Xue,Zhou Liu,Sven Becker,Wenyun Yang,Honglin Du,Changsheng Wang,Yingchang Yang,Gerhard Jakob,Mathias Kläui,Yuriy Mokrousov,Jinbo Yang###
(461346, 461346)
 We report the observation of magnetoresistance (MR) originating from theorbital angular momentum transport (OAM) in a Permalloy (Py) / oxidized Cu(Cu) heterostructure the orbital Rashba-Edelstein magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[330.0, 4, ',', 4]

Cu
###Observation of the Orbital Rashba-Edelstein Magnetoresistance|Shilei Ding,Zhongyu Liang,Dongwook Go,Chao Yun,Mingzhu Xue,Zhou Liu,Sven Becker,Wenyun Yang,Honglin Du,Changsheng Wang,Yingchang Yang,Gerhard Jakob,Mathias Kläui,Yuriy Mokrousov,Jinbo Yang###
(461365, 461365)
 We report the observation of magnetoresistance (MR) originating from theorbital angular momentum transport (OAM) in a Permalloy (Py) / oxidized Cu(Cu) heterostructure the orbital Rashba-Edelstein magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[311.0, 4, ',', 4]

(Cu)
###Observation of the Orbital Rashba-Edelstein Magnetoresistance|Shilei Ding,Zhongyu Liang,Dongwook Go,Chao Yun,Mingzhu Xue,Zhou Liu,Sven Becker,Wenyun Yang,Honglin Du,Changsheng Wang,Yingchang Yang,Gerhard Jakob,Mathias Kläui,Yuriy Mokrousov,Jinbo Yang###
(461368, 461370)
 We report the observation of magnetoresistance (MR) originating from theorbital angular momentum transport (OAM) in a Permalloy (Py) / oxidized Cu(Cu) heterostructure the orbital Rashba-Edelstein magnetoresistance.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[306.0, 4, ',', 4]

O
###Observation of the Orbital Rashba-Edelstein Magnetoresistance|Shilei Ding,Zhongyu Liang,Dongwook Go,Chao Yun,Mingzhu Xue,Zhou Liu,Sven Becker,Wenyun Yang,Honglin Du,Changsheng Wang,Yingchang Yang,Gerhard Jakob,Mathias Kläui,Yuriy Mokrousov,Jinbo Yang###
(461416, 461416)
 Theangular dependence of the MR depends on the relative angle between the inducedOAM<missing VAR> and the magnetization in a similar fashion as the spin Hallmagnetoresistance (SMR).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[260.0, 4, ',', 3]

S
###Observation of the Orbital Rashba-Edelstein Magnetoresistance|Shilei Ding,Zhongyu Liang,Dongwook Go,Chao Yun,Mingzhu Xue,Zhou Liu,Sven Becker,Wenyun Yang,Honglin Du,Changsheng Wang,Yingchang Yang,Gerhard Jakob,Mathias Kläui,Yuriy Mokrousov,Jinbo Yang###
(461446, 461446)
 Theangular dependence of the MR depends on the relative angle between the inducedOAM<missing VAR> and the magnetization in a similar fashion as the spin Hallmagnetoresistance (SMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[230.0, 4, ',', 3]

S
###Observation of the Orbital Rashba-Edelstein Magnetoresistance|Shilei Ding,Zhongyu Liang,Dongwook Go,Chao Yun,Mingzhu Xue,Zhou Liu,Sven Becker,Wenyun Yang,Honglin Du,Changsheng Wang,Yingchang Yang,Gerhard Jakob,Mathias Kläui,Yuriy Mokrousov,Jinbo Yang###
(461503, 461503)
 Despite the absence of elements with large spin-orbitcoupling, we find a sizable MR ratio, which is in contrast to the conventionalSMR which requires heavy elements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 4, ',', 2]

Cu
###Observation of the Orbital Rashba-Edelstein Magnetoresistance|Shilei Ding,Zhongyu Liang,Dongwook Go,Chao Yun,Mingzhu Xue,Zhou Liu,Sven Becker,Wenyun Yang,Honglin Du,Changsheng Wang,Yingchang Yang,Gerhard Jakob,Mathias Kläui,Yuriy Mokrousov,Jinbo Yang###
(461528, 461528)
 By varying the thickness of the Cu layer,we confirm that the interface is responsible for the MR, suggesting that theorbital Rashba-Edelstein effect is responsible for the generation of the OAM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 4, ',', 1]

O
###Observation of the Orbital Rashba-Edelstein Magnetoresistance|Shilei Ding,Zhongyu Liang,Dongwook Go,Chao Yun,Mingzhu Xue,Zhou Liu,Sven Becker,Wenyun Yang,Honglin Du,Changsheng Wang,Yingchang Yang,Gerhard Jakob,Mathias Kläui,Yuriy Mokrousov,Jinbo Yang###
(461585, 461585)
 By varying the thickness of the Cu layer,we confirm that the interface is responsible for the MR, suggesting that theorbital Rashba-Edelstein effect is responsible for the generation of the OAM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 4, ',', 1]

Pt
###Observation of the Orbital Rashba-Edelstein Magnetoresistance|Shilei Ding,Zhongyu Liang,Dongwook Go,Chao Yun,Mingzhu Xue,Zhou Liu,Sven Becker,Wenyun Yang,Honglin Du,Changsheng Wang,Yingchang Yang,Gerhard Jakob,Mathias Kläui,Yuriy Mokrousov,Jinbo Yang###
(461656, 461656)
Through Py thickness-dependence studies, we find that the effective values forthe spin diffusion and spin dephasing lengths of Py are significantly largerthan the values measured in Py / Pt bilayers, approximately by the factor of 2and 4, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 4, ',', 0]

Cu
###Observation of the Orbital Rashba-Edelstein Magnetoresistance|Shilei Ding,Zhongyu Liang,Dongwook Go,Chao Yun,Mingzhu Xue,Zhou Liu,Sven Becker,Wenyun Yang,Honglin Du,Changsheng Wang,Yingchang Yang,Gerhard Jakob,Mathias Kläui,Yuriy Mokrousov,Jinbo Yang###
(461724, 461724)
 This implies that another mechanism beyond theconventional spin-based scenario is responsible for the MR observed in Py / Custructures originated in a sizeable transport of OAM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 4, ',', 1]

O
###Observation of the Orbital Rashba-Edelstein Magnetoresistance|Shilei Ding,Zhongyu Liang,Dongwook Go,Chao Yun,Mingzhu Xue,Zhou Liu,Sven Becker,Wenyun Yang,Honglin Du,Changsheng Wang,Yingchang Yang,Gerhard Jakob,Mathias Kläui,Yuriy Mokrousov,Jinbo Yang###
(461741, 461741)
 This implies that another mechanism beyond theconventional spin-based scenario is responsible for the MR observed in Py / Custructures originated in a sizeable transport of OAM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 4, ',', 1]

O
###Observation of the Orbital Rashba-Edelstein Magnetoresistance|Shilei Ding,Zhongyu Liang,Dongwook Go,Chao Yun,Mingzhu Xue,Zhou Liu,Sven Becker,Wenyun Yang,Honglin Du,Changsheng Wang,Yingchang Yang,Gerhard Jakob,Mathias Kläui,Yuriy Mokrousov,Jinbo Yang###
(461782, 461782)
 Our findings not onlyunambiguously demonstrate the current-induced torque without using any heavyelement via the OAM<missing VAR> channel but also provide an important clue towards themicroscopic understanding of the role that OAM<missing VAR> transport can play formagnetization dynamics.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 4, ',', 2]

O
###Observation of the Orbital Rashba-Edelstein Magnetoresistance|Shilei Ding,Zhongyu Liang,Dongwook Go,Chao Yun,Mingzhu Xue,Zhou Liu,Sven Becker,Wenyun Yang,Honglin Du,Changsheng Wang,Yingchang Yang,Gerhard Jakob,Mathias Kläui,Yuriy Mokrousov,Jinbo Yang###
(461817, 461817)
 Our findings not onlyunambiguously demonstrate the current-induced torque without using any heavyelement via the OAM<missing VAR> channel but also provide an important clue towards themicroscopic understanding of the role that OAM<missing VAR> transport can play formagnetization dynamics.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 4, ',', 2]

H
###Extended Kohler$^,$s Rule of Magnetoresistance|Jing Xu,Fei Han,Ting-Ting Wang,Laxman R. Thoutam,Samuel E. Pate,Mingda Li,Xufeng Zhang,Yong-Lei Wang,Roxanna Fotovat,Ulrich Welp,Xiuquan Zhou,Wai-Kwong Kwok,Duck Young Chung,Mercouri G. Kanatzidis,Zhi-Li Xiao###
(461914, 461914)
 A notable phenomenon in topological semimetals is the violation ofKohler,s<missing VAR> rule, which dictates that the magnetoresistance MR obeys ascaling behavior of MR  f<missing VAR>(H/rho0), where MR  [rhoH-rho0]/rho0 andH is the magnetic field, with rhoH and rho0 being the resistivity atH and zero field, respectively.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Extended Kohler$^,$s Rule of Magnetoresistance|Jing Xu,Fei Han,Ting-Ting Wang,Laxman R. Thoutam,Samuel E. Pate,Mingda Li,Xufeng Zhang,Yong-Lei Wang,Roxanna Fotovat,Ulrich Welp,Xiuquan Zhou,Wai-Kwong Kwok,Duck Young Chung,Mercouri G. Kanatzidis,Zhi-Li Xiao###
(461929, 461929)
 A notable phenomenon in topological semimetals is the violation ofKohler,s<missing VAR> rule, which dictates that the magnetoresistance MR obeys ascaling behavior of MR  f<missing VAR>(H/rho0), where MR  [rhoH-rho0]/rho0 andH is the magnetic field, with rhoH and rho0 being the resistivity atH and zero field, respectively.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Extended Kohler$^,$s Rule of Magnetoresistance|Jing Xu,Fei Han,Ting-Ting Wang,Laxman R. Thoutam,Samuel E. Pate,Mingda Li,Xufeng Zhang,Yong-Lei Wang,Roxanna Fotovat,Ulrich Welp,Xiuquan Zhou,Wai-Kwong Kwok,Duck Young Chung,Mercouri G. Kanatzidis,Zhi-Li Xiao###
(461941, 461941)
 A notable phenomenon in topological semimetals is the violation ofKohler,s<missing VAR> rule, which dictates that the magnetoresistance MR obeys ascaling behavior of MR  f<missing VAR>(H/rho0), where MR  [rhoH-rho0]/rho0 andH is the magnetic field, with rhoH and rho0 being the resistivity atH and zero field, respectively.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Extended Kohler$^,$s Rule of Magnetoresistance|Jing Xu,Fei Han,Ting-Ting Wang,Laxman R. Thoutam,Samuel E. Pate,Mingda Li,Xufeng Zhang,Yong-Lei Wang,Roxanna Fotovat,Ulrich Welp,Xiuquan Zhou,Wai-Kwong Kwok,Duck Young Chung,Mercouri G. Kanatzidis,Zhi-Li Xiao###
(461955, 461955)
 A notable phenomenon in topological semimetals is the violation ofKohler,s<missing VAR> rule, which dictates that the magnetoresistance MR obeys ascaling behavior of MR  f<missing VAR>(H/rho0), where MR  [rhoH-rho0]/rho0 andH is the magnetic field, with rhoH and rho0 being the resistivity atH and zero field, respectively.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Extended Kohler$^,$s Rule of Magnetoresistance|Jing Xu,Fei Han,Ting-Ting Wang,Laxman R. Thoutam,Samuel E. Pate,Mingda Li,Xufeng Zhang,Yong-Lei Wang,Roxanna Fotovat,Ulrich Welp,Xiuquan Zhou,Wai-Kwong Kwok,Duck Young Chung,Mercouri G. Kanatzidis,Zhi-Li Xiao###
(461971, 461971)
 A notable phenomenon in topological semimetals is the violation ofKohler,s<missing VAR> rule, which dictates that the magnetoresistance MR obeys ascaling behavior of MR  f<missing VAR>(H/rho0), where MR  [rhoH-rho0]/rho0 andH is the magnetic field, with rhoH and rho0 being the resistivity atH and zero field, respectively.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TaP
###Extended Kohler$^,$s Rule of Magnetoresistance|Jing Xu,Fei Han,Ting-Ting Wang,Laxman R. Thoutam,Samuel E. Pate,Mingda Li,Xufeng Zhang,Yong-Lei Wang,Roxanna Fotovat,Ulrich Welp,Xiuquan Zhou,Wai-Kwong Kwok,Duck Young Chung,Mercouri G. Kanatzidis,Zhi-Li Xiao###
(462033, 462034)
 We find that themagnetoresistance of the Weyl semimetal, TaP, follows an extended Kohler,s<missing VAR>rule MR  f<missing VAR>[H/(nTrho0)], with nT describing the temperature dependenceof the carrier density.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe2
###Extended Kohler$^,$s Rule of Magnetoresistance|Jing Xu,Fei Han,Ting-Ting Wang,Laxman R. Thoutam,Samuel E. Pate,Mingda Li,Xufeng Zhang,Yong-Lei Wang,Roxanna Fotovat,Ulrich Welp,Xiuquan Zhou,Wai-Kwong Kwok,Duck Young Chung,Mercouri G. Kanatzidis,Zhi-Li Xiao###
(462217, 462218)
 We apply our extended Kohler,s<missing VAR>rule to BaFe2(As1-xPx)2 to settle a long-standing debate on thescaling behavior of the normal-state magnetoresistance of a superconductor,namely, MR  tan2thetaH, where thetaH is the Hall angle.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As1-xP
###Extended Kohler$^,$s Rule of Magnetoresistance|Jing Xu,Fei Han,Ting-Ting Wang,Laxman R. Thoutam,Samuel E. Pate,Mingda Li,Xufeng Zhang,Yong-Lei Wang,Roxanna Fotovat,Ulrich Welp,Xiuquan Zhou,Wai-Kwong Kwok,Duck Young Chung,Mercouri G. Kanatzidis,Zhi-Li Xiao###
(462220, 462224)
 We apply our extended Kohler,s<missing VAR>rule to BaFe2(As1-xPx)2 to settle a long-standing debate on thescaling behavior of the normal-state magnetoresistance of a superconductor,namely, MR  tan2thetaH, where thetaH is the Hall angle.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

H
###Extended Kohler$^,$s Rule of Magnetoresistance|Jing Xu,Fei Han,Ting-Ting Wang,Laxman R. Thoutam,Samuel E. Pate,Mingda Li,Xufeng Zhang,Yong-Lei Wang,Roxanna Fotovat,Ulrich Welp,Xiuquan Zhou,Wai-Kwong Kwok,Duck Young Chung,Mercouri G. Kanatzidis,Zhi-Li Xiao###
(462278, 462278)
 We apply our extended Kohler,s<missing VAR>rule to BaFe2(As1-xPx)2 to settle a long-standing debate on thescaling behavior of the normal-state magnetoresistance of a superconductor,namely, MR  tan2thetaH, where thetaH is the Hall angle.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Extended Kohler$^,$s Rule of Magnetoresistance|Jing Xu,Fei Han,Ting-Ting Wang,Laxman R. Thoutam,Samuel E. Pate,Mingda Li,Xufeng Zhang,Yong-Lei Wang,Roxanna Fotovat,Ulrich Welp,Xiuquan Zhou,Wai-Kwong Kwok,Duck Young Chung,Mercouri G. Kanatzidis,Zhi-Li Xiao###
(462284, 462284)
 We apply our extended Kohler,s<missing VAR>rule to BaFe2(As1-xPx)2 to settle a long-standing debate on thescaling behavior of the normal-state magnetoresistance of a superconductor,namely, MR  tan2thetaH, where thetaH is the Hall angle.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

InSb
###Extended Kohler$^,$s Rule of Magnetoresistance|Jing Xu,Fei Han,Ting-Ting Wang,Laxman R. Thoutam,Samuel E. Pate,Mingda Li,Xufeng Zhang,Yong-Lei Wang,Roxanna Fotovat,Ulrich Welp,Xiuquan Zhou,Wai-Kwong Kwok,Duck Young Chung,Mercouri G. Kanatzidis,Zhi-Li Xiao###
(462328, 462329)
 We furthervalidate the extended Kohler,s<missing VAR> rule and demonstrate its generality in asemiconductor, InSb, where the temperature-dependent carrier density can bereliably determined both theoretically and experimentally.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Spin anomalous-Hall unidirectional magnetoresistance|M. Mehraeen,Steven S. -L. Zhang###
(462923, 462923)
 We predict a spin anomalous-Hall unidirectional magnetoresistance (AH-UMR) inconducting bilayers composed of a ferromagnetic layer and a nonmagnetic layer,which does textitnot rely on the spin Hall effect in the normal metallayer-in stark contrast to the well-studied unidirectional spin-Hallmagnetoresistance-but, instead, arises from the spin anomalous Hall effect inthe ferromagnetic layer.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

U
###Spin anomalous-Hall unidirectional magnetoresistance|M. Mehraeen,Steven S. -L. Zhang###
(462925, 462925)
 We predict a spin anomalous-Hall unidirectional magnetoresistance (AH-UMR) inconducting bilayers composed of a ferromagnetic layer and a nonmagnetic layer,which does textitnot rely on the spin Hall effect in the normal metallayer-in stark contrast to the well-studied unidirectional spin-Hallmagnetoresistance-but, instead, arises from the spin anomalous Hall effect inthe ferromagnetic layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Spin anomalous-Hall unidirectional magnetoresistance|M. Mehraeen,Steven S. -L. Zhang###
(463167, 463167)
 Thedependences of the spin AH-UMR effect on materials and geometric parameters areanalyzed and compared with other nonlinear magnetoresistances.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

U
###Spin anomalous-Hall unidirectional magnetoresistance|M. Mehraeen,Steven S. -L. Zhang###
(463169, 463169)
 Thedependences of the spin AH-UMR effect on materials and geometric parameters areanalyzed and compared with other nonlinear magnetoresistances.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin anomalous-Hall unidirectional magnetoresistance|M. Mehraeen,Steven S. -L. Zhang###
(463203, 463203)
 In particular,we show that, in magnetic bilayers where spin anomalous Hall and spin Halleffects are comparable, the overall UMR may undergo a sign change when thethickness of either layer is varied, suggesting a scheme to quantify the spinHall or spin anomalous Hall angle via a nonlinear transport measurement.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

U
###Spin anomalous-Hall unidirectional magnetoresistance|M. Mehraeen,Steven S. -L. Zhang###
(463248, 463248)
 In particular,we show that, in magnetic bilayers where spin anomalous Hall and spin Halleffects are comparable, the overall UMR may undergo a sign change when thethickness of either layer is varied, suggesting a scheme to quantify the spinHall or spin anomalous Hall angle via a nonlinear transport measurement.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B2
###$B^2$ to $B$-linear magnetoresistance due to impeded orbital motion|R. D. H. Hinlopen,F. A. Hinlopen,J. Ayres,N. E. Hussey###
(463326, 463327)
B2 to B-linear magnetoresistance due to impeded orbital motion.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###$B^2$ to $B$-linear magnetoresistance due to impeded orbital motion|R. D. H. Hinlopen,F. A. Hinlopen,J. Ayres,N. E. Hussey###
(463331, 463331)
B2 to B-linear magnetoresistance due to impeded orbital motion.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###$B^2$ to $B$-linear magnetoresistance due to impeded orbital motion|R. D. H. Hinlopen,F. A. Hinlopen,J. Ayres,N. E. Hussey###
(463397, 463397)
 Strange metals exhibit a variety of anomalous magnetotransport properties,the most striking of which is a resistivity that increases linearly withmagnetic field B over a broad temperature and field range.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###$B^2$ to $B$-linear magnetoresistance due to impeded orbital motion|R. D. H. Hinlopen,F. A. Hinlopen,J. Ayres,N. E. Hussey###
(463560, 463560)
 Strongly anisotropic(momentum-dependent) scattering can generate B-linear magnetoresistance butonly at intermediate field strengths.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###$B^2$ to $B$-linear magnetoresistance due to impeded orbital motion|R. D. H. Hinlopen,F. A. Hinlopen,J. Ayres,N. E. Hussey###
(463580, 463580)
 At high enough fields, themagnetoresistance must eventually saturate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NdGaO3
###Spin Hall magnetoresistance in paramagnetic NdGaO3|V. Eswara Phanindra,A. Das,J. J. L. van Rijn,S. Chen,B. J. van Wees,T. Banerjee###
(463833, 463836)
Spin Hall magnetoresistance in paramagnetic NdGaO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin Hall magnetoresistance in paramagnetic NdGaO3|V. Eswara Phanindra,A. Das,J. J. L. van Rijn,S. Chen,B. J. van Wees,T. Banerjee###
(463839, 463839)
 In recent years, spin Hall magnetoresistance (SMR) has emerged as anefficient way to probe the spontaneous magnetization state in ordered magneticsystems, by electrical current.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin Hall magnetoresistance in paramagnetic NdGaO3|V. Eswara Phanindra,A. Das,J. J. L. van Rijn,S. Chen,B. J. van Wees,T. Banerjee###
(463853, 463853)
 In recent years, spin Hall magnetoresistance (SMR) has emerged as anefficient way to probe the spontaneous magnetization state in ordered magneticsystems, by electrical current.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin Hall magnetoresistance in paramagnetic NdGaO3|V. Eswara Phanindra,A. Das,J. J. L. van Rijn,S. Chen,B. J. van Wees,T. Banerjee###
(463943, 463943)
In this work, SMR is used to probe paramagnetic NdGaO3 (NG<missing VAR>O), a rare earthoxide, possessing a sizable spin orbit interaction (L<missing VAR>6).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin Hall magnetoresistance in paramagnetic NdGaO3|V. Eswara Phanindra,A. Das,J. J. L. van Rijn,S. Chen,B. J. van Wees,T. Banerjee###
(463950, 463950)
In this work, SMR is used to probe paramagnetic NdGaO3 (NG<missing VAR>O), a rare earthoxide, possessing a sizable spin orbit interaction (L<missing VAR>6).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NdGaO3
###Spin Hall magnetoresistance in paramagnetic NdGaO3|V. Eswara Phanindra,A. Das,J. J. L. van Rijn,S. Chen,B. J. van Wees,T. Banerjee###
(463964, 463967)
In this work, SMR is used to probe paramagnetic NdGaO3 (NG<missing VAR>O), a rare earthoxide, possessing a sizable spin orbit interaction (L<missing VAR>6).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Spin Hall magnetoresistance in paramagnetic NdGaO3|V. Eswara Phanindra,A. Das,J. J. L. van Rijn,S. Chen,B. J. van Wees,T. Banerjee###
(463970, 463970)
In this work, SMR is used to probe paramagnetic NdGaO3 (NG<missing VAR>O), a rare earthoxide, possessing a sizable spin orbit interaction (L<missing VAR>6).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Spin Hall magnetoresistance in paramagnetic NdGaO3|V. Eswara Phanindra,A. Das,J. J. L. van Rijn,S. Chen,B. J. van Wees,T. Banerjee###
(463972, 463972)
In this work, SMR is used to probe paramagnetic NdGaO3 (NG<missing VAR>O), a rare earthoxide, possessing a sizable spin orbit interaction (L<missing VAR>6).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Spin Hall magnetoresistance in paramagnetic NdGaO3|V. Eswara Phanindra,A. Das,J. J. L. van Rijn,S. Chen,B. J. van Wees,T. Banerjee###
(464004, 464004)
 NG<missing VAR>O has not beeninvestigated earlier for its efficiency in propagating spins.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Spin Hall magnetoresistance in paramagnetic NdGaO3|V. Eswara Phanindra,A. Das,J. J. L. van Rijn,S. Chen,B. J. van Wees,T. Banerjee###
(464006, 464006)
 NG<missing VAR>O has not beeninvestigated earlier for its efficiency in propagating spins.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Spin Hall magnetoresistance in paramagnetic NdGaO3|V. Eswara Phanindra,A. Das,J. J. L. van Rijn,S. Chen,B. J. van Wees,T. Banerjee###
(464071, 464071)
 We have performedextensive temperature and angle dependent-magnetoresistance (ADMR) studiesalong dissimilar crystallographic axes in NG<missing VAR>O, using platinum (Pt) as spininjector and detector and utilizing (inverse) spin Hall effect.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Spin Hall magnetoresistance in paramagnetic NdGaO3|V. Eswara Phanindra,A. Das,J. J. L. van Rijn,S. Chen,B. J. van Wees,T. Banerjee###
(464073, 464073)
 We have performedextensive temperature and angle dependent-magnetoresistance (ADMR) studiesalong dissimilar crystallographic axes in NG<missing VAR>O, using platinum (Pt) as spininjector and detector and utilizing (inverse) spin Hall effect.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(Pt)
###Spin Hall magnetoresistance in paramagnetic NdGaO3|V. Eswara Phanindra,A. Das,J. J. L. van Rijn,S. Chen,B. J. van Wees,T. Banerjee###
(464080, 464082)
 We have performedextensive temperature and angle dependent-magnetoresistance (ADMR) studiesalong dissimilar crystallographic axes in NG<missing VAR>O, using platinum (Pt) as spininjector and detector and utilizing (inverse) spin Hall effect.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Spin Hall magnetoresistance in paramagnetic NdGaO3|V. Eswara Phanindra,A. Das,J. J. L. van Rijn,S. Chen,B. J. van Wees,T. Banerjee###
(464147, 464147)
 We find a closecorrelation between the temperature dependence of the ADMR response withmagnetization in NG<missing VAR>O and a linear current bias dependence of the ADMRamplitudes.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Spin Hall magnetoresistance in paramagnetic NdGaO3|V. Eswara Phanindra,A. Das,J. J. L. van Rijn,S. Chen,B. J. van Wees,T. Banerjee###
(464149, 464149)
 We find a closecorrelation between the temperature dependence of the ADMR response withmagnetization in NG<missing VAR>O and a linear current bias dependence of the ADMRamplitudes.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin Hall magnetoresistance in paramagnetic NdGaO3|V. Eswara Phanindra,A. Das,J. J. L. van Rijn,S. Chen,B. J. van Wees,T. Banerjee###
(464184, 464184)
 These are chacteristics of SMR effect in Pt/NG<missing VAR>O, arising from thetorque acting on localized moments in NG<missing VAR>O and considering crystal field inducedintermultiplet transitions with temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt/N
###Spin Hall magnetoresistance in paramagnetic NdGaO3|V. Eswara Phanindra,A. Das,J. J. L. van Rijn,S. Chen,B. J. van Wees,T. Banerjee###
(464192, 464194)
 These are chacteristics of SMR effect in Pt/NG<missing VAR>O, arising from thetorque acting on localized moments in NG<missing VAR>O and considering crystal field inducedintermultiplet transitions with temperature.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

O
###Spin Hall magnetoresistance in paramagnetic NdGaO3|V. Eswara Phanindra,A. Das,J. J. L. van Rijn,S. Chen,B. J. van Wees,T. Banerjee###
(464196, 464196)
 These are chacteristics of SMR effect in Pt/NG<missing VAR>O, arising from thetorque acting on localized moments in NG<missing VAR>O and considering crystal field inducedintermultiplet transitions with temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Spin Hall magnetoresistance in paramagnetic NdGaO3|V. Eswara Phanindra,A. Das,J. J. L. van Rijn,S. Chen,B. J. van Wees,T. Banerjee###
(464218, 464218)
 These are chacteristics of SMR effect in Pt/NG<missing VAR>O, arising from thetorque acting on localized moments in NG<missing VAR>O and considering crystal field inducedintermultiplet transitions with temperature.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Spin Hall magnetoresistance in paramagnetic NdGaO3|V. Eswara Phanindra,A. Das,J. J. L. van Rijn,S. Chen,B. J. van Wees,T. Banerjee###
(464220, 464220)
 These are chacteristics of SMR effect in Pt/NG<missing VAR>O, arising from thetorque acting on localized moments in NG<missing VAR>O and considering crystal field inducedintermultiplet transitions with temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt/SrTiO3
###Spin Hall magnetoresistance in paramagnetic NdGaO3|V. Eswara Phanindra,A. Das,J. J. L. van Rijn,S. Chen,B. J. van Wees,T. Banerjee###
(464248, 464253)
 Control experiments on Pt/SrTiO3and Pt/SiO2 devices were also carried out in order to validate the observed SMRresponse in Pt/NG<missing VAR>O bilayer and to rule out magnetoresistive contributions fromPt.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Pt/SiO2
###Spin Hall magnetoresistance in paramagnetic NdGaO3|V. Eswara Phanindra,A. Das,J. J. L. van Rijn,S. Chen,B. J. van Wees,T. Banerjee###
(464258, 464262)
 Control experiments on Pt/SrTiO3and Pt/SiO2 devices were also carried out in order to validate the observed SMRresponse in Pt/NG<missing VAR>O bilayer and to rule out magnetoresistive contributions fromPt.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

S
###Spin Hall magnetoresistance in paramagnetic NdGaO3|V. Eswara Phanindra,A. Das,J. J. L. van Rijn,S. Chen,B. J. van Wees,T. Banerjee###
(464286, 464286)
 Control experiments on Pt/SrTiO3and Pt/SiO2 devices were also carried out in order to validate the observed SMRresponse in Pt/NG<missing VAR>O bilayer and to rule out magnetoresistive contributions fromPt.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt/N
###Spin Hall magnetoresistance in paramagnetic NdGaO3|V. Eswara Phanindra,A. Das,J. J. L. van Rijn,S. Chen,B. J. van Wees,T. Banerjee###
(464295, 464297)
 Control experiments on Pt/SrTiO3and Pt/SiO2 devices were also carried out in order to validate the observed SMRresponse in Pt/NG<missing VAR>O bilayer and to rule out magnetoresistive contributions fromPt.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

O
###Spin Hall magnetoresistance in paramagnetic NdGaO3|V. Eswara Phanindra,A. Das,J. J. L. van Rijn,S. Chen,B. J. van Wees,T. Banerjee###
(464299, 464299)
 Control experiments on Pt/SrTiO3and Pt/SiO2 devices were also carried out in order to validate the observed SMRresponse in Pt/NG<missing VAR>O bilayer and to rule out magnetoresistive contributions fromPt.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Spin Hall magnetoresistance in paramagnetic NdGaO3|V. Eswara Phanindra,A. Das,J. J. L. van Rijn,S. Chen,B. J. van Wees,T. Banerjee###
(464318, 464318)
 Control experiments on Pt/SrTiO3and Pt/SiO2 devices were also carried out in order to validate the observed SMRresponse in Pt/NG<missing VAR>O bilayer and to rule out magnetoresistive contributions fromPt.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Fe- and Co-based magnetic tunnel junctions with AlN and ZnO spacers|Gokaran Shukla,Stefano Sanvito,Geunsik Lee###
(464329, 464329)
Fe- and Co-based magnetic tunnel junctions with AlN and ZnO spacers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[322.0, 2, 'D', 5],[573.0, 1, ',', 10],[575.0, 0, '%', 10]

Co
###Fe- and Co-based magnetic tunnel junctions with AlN and ZnO spacers|Gokaran Shukla,Stefano Sanvito,Geunsik Lee###
(464334, 464334)
Fe- and Co-based magnetic tunnel junctions with AlN and ZnO spacers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[317.0, 2, 'D', 5],[568.0, 1, ',', 10],[570.0, 0, '%', 10]

AlN
###Fe- and Co-based magnetic tunnel junctions with AlN and ZnO spacers|Gokaran Shukla,Stefano Sanvito,Geunsik Lee###
(464346, 464347)
Fe- and Co-based magnetic tunnel junctions with AlN and ZnO spacers.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[304.0, 2, 'D', 5],[555.0, 1, ',', 10],[557.0, 0, '%', 10]

ZnO
###Fe- and Co-based magnetic tunnel junctions with AlN and ZnO spacers|Gokaran Shukla,Stefano Sanvito,Geunsik Lee###
(464351, 464352)
Fe- and Co-based magnetic tunnel junctions with AlN and ZnO spacers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[299.0, 2, 'D', 5],[550.0, 1, ',', 10],[552.0, 0, '%', 10]

AlN
###Fe- and Co-based magnetic tunnel junctions with AlN and ZnO spacers|Gokaran Shukla,Stefano Sanvito,Geunsik Lee###
(464357, 464358)
 AlN and ZnO, two wide band-gap semiconductors extensively used in the displayindustry, crystallise in the wurtzite structure, which can favour the formationof epitaxial interfaces to close-packed common ferromagnets.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[293.0, 2, 'D', 4],[544.0, 1, ',', 9],[546.0, 0, '%', 9]

ZnO
###Fe- and Co-based magnetic tunnel junctions with AlN and ZnO spacers|Gokaran Shukla,Stefano Sanvito,Geunsik Lee###
(464362, 464363)
 AlN and ZnO, two wide band-gap semiconductors extensively used in the displayindustry, crystallise in the wurtzite structure, which can favour the formationof epitaxial interfaces to close-packed common ferromagnets.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[288.0, 2, 'D', 4],[539.0, 1, ',', 9],[541.0, 0, '%', 9]

In
###Fe- and Co-based magnetic tunnel junctions with AlN and ZnO spacers|Gokaran Shukla,Stefano Sanvito,Geunsik Lee###
(464460, 464460)
 In particular, the it ab initio quantum transport code itSmeagol is used to model the X<missing VAR>[111]/Y[0001]/X<missing VAR>[111] (X<missing VAR> Co and Fe, YAlN and ZnO) family of junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[191.0, 2, 'D', 2],[442.0, 1, ',', 7],[444.0, 0, '%', 7]

Y
###Fe- and Co-based magnetic tunnel junctions with AlN and ZnO spacers|Gokaran Shukla,Stefano Sanvito,Geunsik Lee###
(464499, 464499)
 In particular, the it ab initio quantum transport code itSmeagol is used to model the X<missing VAR>[111]/Y[0001]/X<missing VAR>[111] (X<missing VAR> Co and Fe, YAlN and ZnO) family of junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 2, 'D', 2],[403.0, 1, ',', 7],[405.0, 0, '%', 7]

Co
###Fe- and Co-based magnetic tunnel junctions with AlN and ZnO spacers|Gokaran Shukla,Stefano Sanvito,Geunsik Lee###
(464512, 464512)
 In particular, the it ab initio quantum transport code itSmeagol is used to model the X<missing VAR>[111]/Y[0001]/X<missing VAR>[111] (X<missing VAR> Co and Fe, YAlN and ZnO) family of junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 2, 'D', 2],[390.0, 1, ',', 7],[392.0, 0, '%', 7]

Fe
###Fe- and Co-based magnetic tunnel junctions with AlN and ZnO spacers|Gokaran Shukla,Stefano Sanvito,Geunsik Lee###
(464516, 464516)
 In particular, the it ab initio quantum transport code itSmeagol is used to model the X<missing VAR>[111]/Y[0001]/X<missing VAR>[111] (X<missing VAR> Co and Fe, YAlN and ZnO) family of junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 2, 'D', 2],[386.0, 1, ',', 7],[388.0, 0, '%', 7]

Y
###Fe- and Co-based magnetic tunnel junctions with AlN and ZnO spacers|Gokaran Shukla,Stefano Sanvito,Geunsik Lee###
(464519, 464519)
 In particular, the it ab initio quantum transport code itSmeagol is used to model the X<missing VAR>[111]/Y[0001]/X<missing VAR>[111] (X<missing VAR> Co and Fe, YAlN and ZnO) family of junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 2, 'D', 2],[383.0, 1, ',', 7],[385.0, 0, '%', 7]

AlN
###Fe- and Co-based magnetic tunnel junctions with AlN and ZnO spacers|Gokaran Shukla,Stefano Sanvito,Geunsik Lee###
(464522, 464523)
 In particular, the it ab initio quantum transport code itSmeagol is used to model the X<missing VAR>[111]/Y[0001]/X<missing VAR>[111] (X<missing VAR> Co and Fe, YAlN and ZnO) family of junctions.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 2, 'D', 2],[379.0, 1, ',', 7],[381.0, 0, '%', 7]

O
###Fe- and Co-based magnetic tunnel junctions with AlN and ZnO spacers|Gokaran Shukla,Stefano Sanvito,Geunsik Lee###
(464528, 464528)
 In particular, the it ab initio quantum transport code itSmeagol is used to model the X<missing VAR>[111]/Y[0001]/X<missing VAR>[111] (X<missing VAR> Co and Fe, YAlN and ZnO) family of junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 2, 'D', 2],[374.0, 1, ',', 7],[376.0, 0, '%', 7]

In
###Fe- and Co-based magnetic tunnel junctions with AlN and ZnO spacers|Gokaran Shukla,Stefano Sanvito,Geunsik Lee###
(464687, 464687)
 In general, we find that Co-based junctionspresent limited spin filtering and little magnetoresistance at low bias, sinceboth spin sub-bands cross the Fermi level with Delta1 symmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 2, 'D', 2],[215.0, 1, ',', 3],[217.0, 0, '%', 3]

Co
###Fe- and Co-based magnetic tunnel junctions with AlN and ZnO spacers|Gokaran Shukla,Stefano Sanvito,Geunsik Lee###
(464698, 464698)
 In general, we find that Co-based junctionspresent limited spin filtering and little magnetoresistance at low bias, sinceboth spin sub-bands cross the Fermi level with Delta1 symmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 2, 'D', 2],[204.0, 1, ',', 3],[206.0, 0, '%', 3]

Fe
###Fe- and Co-based magnetic tunnel junctions with AlN and ZnO spacers|Gokaran Shukla,Stefano Sanvito,Geunsik Lee###
(464764, 464764)
 Thiscontrasts the situation of Fe, where only the minority Delta1 band isavailable.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 2, 'D', 3],[138.0, 1, ',', 2],[140.0, 0, '%', 2]

Fe
###Fe- and Co-based magnetic tunnel junctions with AlN and ZnO spacers|Gokaran Shukla,Stefano Sanvito,Geunsik Lee###
(464799, 464799)
 However, even in the case of Fe the magnitude of themagnetoresistance at low bias remains relatively small, mostly due toconduction away from the Gamma point and through complex bands with symmetrydifferent than Delta1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 2, 'D', 4],[103.0, 1, ',', 1],[105.0, 0, '%', 1]

Fe/AlN/Fe
###Fe- and Co-based magnetic tunnel junctions with AlN and ZnO spacers|Gokaran Shukla,Stefano Sanvito,Geunsik Lee###
(464877, 464882)
 The only exception is for the Fe/AlN/Fe junction,where we predict a magnetoresitance of around 1,000% at low bias.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[226.0, 2, 'D', 5],[20.0, 1, ',', 0],[22.0, 0, '%', 0]

(CPP)
###Spin-orbit enabled all-electrical readout of chiral spin-textures|Imara Lima Fernandes,Stefan Blügel,Samir Lounis###
(465038, 465042)
 However, this ambition is inhibited since electricalreading of chiral attributes is highly non-trivial with conventional currentperpendicular-to-plane (CPP) sensing devices.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Spin-orbit enabled all-electrical readout of chiral spin-textures|Imara Lima Fernandes,Stefan Blügel,Samir Lounis###
(465092, 465092)
 Here we demonstrate fromextensive first-principles simulations and multiple scattering expansion theemergence of the chiral spin-mixing magnetoresistance (C-XMR) enabling highlyefficient all-electrical readout of the chirality and helicity of respectivelyone- and two-dimensional magnetic states of matter.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

AgCrSe2
###Spin-orbit-derived giant magnetoresistance in a layered magnetic semiconductor AgCrSe2|Hidefumi Takahashi,Tomoki Akiba,Alex Hiro Mayo,Kazuto Akiba,Atsushi Miyake,Masashi Tokunaga,Hitoshi Mori,Ryotaro Arita,Shintaro Ishiwata###
(465367, 465370)
Spin-orbit-derived giant magnetoresistance in a layered magnetic semiconductor AgCrSe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[192.0, -3, ',', 4]

(SOC)
###Spin-orbit-derived giant magnetoresistance in a layered magnetic semiconductor AgCrSe2|Hidefumi Takahashi,Tomoki Akiba,Alex Hiro Mayo,Kazuto Akiba,Atsushi Miyake,Masashi Tokunaga,Hitoshi Mori,Ryotaro Arita,Shintaro Ishiwata###
(465452, 465456)
 For such remarkable functions, a spin-orbitcoupling (SOC) serves as an essential ingredient.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, -3, ',', 2]

AgCrSe2
###Spin-orbit-derived giant magnetoresistance in a layered magnetic semiconductor AgCrSe2|Hidefumi Takahashi,Tomoki Akiba,Alex Hiro Mayo,Kazuto Akiba,Atsushi Miyake,Masashi Tokunaga,Hitoshi Mori,Ryotaro Arita,Shintaro Ishiwata###
(465494, 465497)
 Here we report a giantpositive magnetoresistance in a layered magnetic semiconductor AgCrSe2, whichis a manifestation of the subtle combination of the SOC and Zeeman-type spinsplitting.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, -3, ',', 1]

SOC
###Spin-orbit-derived giant magnetoresistance in a layered magnetic semiconductor AgCrSe2|Hidefumi Takahashi,Tomoki Akiba,Alex Hiro Mayo,Kazuto Akiba,Atsushi Miyake,Masashi Tokunaga,Hitoshi Mori,Ryotaro Arita,Shintaro Ishiwata###
(465521, 465523)
 Here we report a giantpositive magnetoresistance in a layered magnetic semiconductor AgCrSe2, whichis a manifestation of the subtle combination of the SOC and Zeeman-type spinsplitting.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, -3, ',', 1]

SOC
###Spin-orbit-derived giant magnetoresistance in a layered magnetic semiconductor AgCrSe2|Hidefumi Takahashi,Tomoki Akiba,Alex Hiro Mayo,Kazuto Akiba,Atsushi Miyake,Masashi Tokunaga,Hitoshi Mori,Ryotaro Arita,Shintaro Ishiwata###
(465660, 465662)
 Basedon the magneto-Seebeck effect and the first-principles calculations, theunconventional magnetoresistance is ascribable to the enhancement of effectivecarrier mass in the SOC induced J<missing VAR>  3/2 state, which is tuned to the Fermilevel through the Zeeman splitting enhanced by the p-d coupling.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, -3, ',', 1]

SOC
###Spin-orbit-derived giant magnetoresistance in a layered magnetic semiconductor AgCrSe2|Hidefumi Takahashi,Tomoki Akiba,Alex Hiro Mayo,Kazuto Akiba,Atsushi Miyake,Masashi Tokunaga,Hitoshi Mori,Ryotaro Arita,Shintaro Ishiwata###
(465729, 465731)
 This studydemonstrates a new aspect of the SOC-derived magnetotransport intwo-dimensional magnetic semiconductors, paving the way to novel spintronicfunctions.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, -3, ',', 2]

Cd3As2
###Direct link between disorder, mobility and magnetoresistance in topological semimetals|Jocienne N. Nelson,Anthony D. Rice,Chase Brooks,Ian A. Leahy,Glenn Teeter,Mark Van Schilfgaarde,Stephan Lany,Brian Fluegel,Minhyea Lee,Kirstin Alberi###
(465901, 465904)
 Here, we achieve unmatched and systematic control of point defectconcentrations in the prototypical Dirac semimetal Cd3As2 to gainimportant insight into the role of disorder on electron transport behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 200, '%', 2],[115.0, -1000, '%', 2],[133.0, -18, ',', 2]

As/Cd
###Direct link between disorder, mobility and magnetoresistance in topological semimetals|Jocienne N. Nelson,Anthony D. Rice,Chase Brooks,Ian A. Leahy,Glenn Teeter,Mark Van Schilfgaarde,Stephan Lany,Brian Fluegel,Minhyea Lee,Kirstin Alberi###
(465986, 465988)
 Reducing arsenic vacancies bychanging the As/Cd flux ratio used during deposition results in an increase inthe magnetoresistance from 200%-1000% and an increase in mobility from5000-18,000 cm2/Vs.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[29.0, 200, '%', 0],[31.0, -1000, '%', 0],[49.0, -18, ',', 0]

TbAuAl4Ge2
###Field-Induced Magnetic States in the Metallic Rare-Earth Layered Triangular Antiferromagnet TbAuAl$_4$Ge$_2$|Ian A. Leahy,Keke Feng,Roei Dey,Ryan Baumbach,Minhyea Lee###
(466195, 466200)
Field-Induced Magnetic States in the Metallic Rare-Earth Layered Triangular Antiferromagnet TbAuAl4Ge2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TbAuAl4Ge2
###Field-Induced Magnetic States in the Metallic Rare-Earth Layered Triangular Antiferromagnet TbAuAl$_4$Ge$_2$|Ian A. Leahy,Keke Feng,Roei Dey,Ryan Baumbach,Minhyea Lee###
(466305, 466310)
 Here we report on the magnetic, thermodynamic, andelectrical transport properties of TbAuAl4Ge2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tb
###Field-Induced Magnetic States in the Metallic Rare-Earth Layered Triangular Antiferromagnet TbAuAl$_4$Ge$_2$|Ian A. Leahy,Keke Feng,Roei Dey,Ryan Baumbach,Minhyea Lee###
(466313, 466313)
 Tb ions form 2-dimensionaltriangular lattice layers which stack along the crystalline c<missing VAR>-axis.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GdAuAl4Ge2
###Field-Induced Magnetic States in the Metallic Rare-Earth Layered Triangular Antiferromagnet TbAuAl$_4$Ge$_2$|Ian A. Leahy,Keke Feng,Roei Dey,Ryan Baumbach,Minhyea Lee###
(466535, 466540)
 We comparethe magnetic properties and magnetoresistance with an isostructralGdAuAl4Ge2 single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TbAuAl4Ge2
###Field-Induced Magnetic States in the Metallic Rare-Earth Layered Triangular Antiferromagnet TbAuAl$_4$Ge$_2$|Ian A. Leahy,Keke Feng,Roei Dey,Ryan Baumbach,Minhyea Lee###
(466553, 466558)
 These results identify TbAuAl4Ge2 as anenvironment for complex quantum spin states and pave the way for furtherinvestigations of the broader LnAuAl4Ge2 family of materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

AuAl4Ge2
###Field-Induced Magnetic States in the Metallic Rare-Earth Layered Triangular Antiferromagnet TbAuAl$_4$Ge$_2$|Ian A. Leahy,Keke Feng,Roei Dey,Ryan Baumbach,Minhyea Lee###
(466599, 466603)
 These results identify TbAuAl4Ge2 as anenvironment for complex quantum spin states and pave the way for furtherinvestigations of the broader LnAuAl4Ge2 family of materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuGa4
###Weyl nodal ring states and Landau quantization with very large magnetoresistance in square-net magnet EuGa$_4$|Shiming Lei,Kevin Allen,Jianwei Huang,Jaime M. Moya,Tsz Chun Wu,Brian Casas,Yichen Zhang,Ji Seop Oh,Makoto Hashimoto,Donghui Lu,Jonathan Denlinger,Chris Jozwiak,Aaron Bostwick,Eli Rotenberg,Luis Balicas,Robert Birgeneau,Matthew S. Foster,Ming Yi,Yan Sun,Emilia Morosan###
(467034, 467036)
Weyl nodal ring states and Landau quantization with very large magnetoresistance in square-net magnet EuGa4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[302.0, 2, 'K', 5],[311.0, 14, 'T', 5],[329.0, 200, ',', 5],[331.0, 0, '%', 5],[389.0, 40, 'T', 6]

S
###Weyl nodal ring states and Landau quantization with very large magnetoresistance in square-net magnet EuGa$_4$|Shiming Lei,Kevin Allen,Jianwei Huang,Jaime M. Moya,Tsz Chun Wu,Brian Casas,Yichen Zhang,Ji Seop Oh,Makoto Hashimoto,Donghui Lu,Jonathan Denlinger,Chris Jozwiak,Aaron Bostwick,Eli Rotenberg,Luis Balicas,Robert Birgeneau,Matthew S. Foster,Ming Yi,Yan Sun,Emilia Morosan###
(467047, 467047)
 Magnetic topological semimetals (T<missing VAR>SMs) allow for an effective control of thetopological electronic states by tuning the spin configuration, and thereforeare promising materials for next-generation electronic and spintronicapplications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[291.0, 2, 'K', 4],[300.0, 14, 'T', 4],[318.0, 200, ',', 4],[320.0, 0, '%', 4],[378.0, 40, 'T', 5]

S
###Weyl nodal ring states and Landau quantization with very large magnetoresistance in square-net magnet EuGa$_4$|Shiming Lei,Kevin Allen,Jianwei Huang,Jaime M. Moya,Tsz Chun Wu,Brian Casas,Yichen Zhang,Ji Seop Oh,Makoto Hashimoto,Donghui Lu,Jonathan Denlinger,Chris Jozwiak,Aaron Bostwick,Eli Rotenberg,Luis Balicas,Robert Birgeneau,Matthew S. Foster,Ming Yi,Yan Sun,Emilia Morosan###
(467115, 467115)
 Of magnetic T<missing VAR>SMs, Weyl nodal-line (NL) semimetals likely have themost tunability, and yet they are the least experimentally studied so far dueto the scarcity of material candidates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[223.0, 2, 'K', 3],[232.0, 14, 'T', 3],[250.0, 200, ',', 3],[252.0, 0, '%', 3],[310.0, 40, 'T', 4]

N
###Weyl nodal ring states and Landau quantization with very large magnetoresistance in square-net magnet EuGa$_4$|Shiming Lei,Kevin Allen,Jianwei Huang,Jaime M. Moya,Tsz Chun Wu,Brian Casas,Yichen Zhang,Ji Seop Oh,Makoto Hashimoto,Donghui Lu,Jonathan Denlinger,Chris Jozwiak,Aaron Bostwick,Eli Rotenberg,Luis Balicas,Robert Birgeneau,Matthew S. Foster,Ming Yi,Yan Sun,Emilia Morosan###
(467126, 467126)
 Of magnetic T<missing VAR>SMs, Weyl nodal-line (NL) semimetals likely have themost tunability, and yet they are the least experimentally studied so far dueto the scarcity of material candidates.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[212.0, 2, 'K', 3],[221.0, 14, 'T', 3],[239.0, 200, ',', 3],[241.0, 0, '%', 3],[299.0, 40, 'T', 4]

EuGa4
###Weyl nodal ring states and Landau quantization with very large magnetoresistance in square-net magnet EuGa$_4$|Shiming Lei,Kevin Allen,Jianwei Huang,Jaime M. Moya,Tsz Chun Wu,Brian Casas,Yichen Zhang,Ji Seop Oh,Makoto Hashimoto,Donghui Lu,Jonathan Denlinger,Chris Jozwiak,Aaron Bostwick,Eli Rotenberg,Luis Balicas,Robert Birgeneau,Matthew S. Foster,Ming Yi,Yan Sun,Emilia Morosan###
(467236, 467238)
 Here, using a combination ofangle-resolved photoemission spectroscopy and quantum oscillation measurements,together with density functional theory calculations, we identify thesquare-net compound EuGa4 as a new magnetic Weyl nodal ring (NR) semimetal, inwhich the line nodes form closed rings in the vicinity of the Fermi level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 2, 'K', 2],[109.0, 14, 'T', 2],[127.0, 200, ',', 2],[129.0, 0, '%', 2],[187.0, 40, 'T', 3]

N
###Weyl nodal ring states and Landau quantization with very large magnetoresistance in square-net magnet EuGa$_4$|Shiming Lei,Kevin Allen,Jianwei Huang,Jaime M. Moya,Tsz Chun Wu,Brian Casas,Yichen Zhang,Ji Seop Oh,Makoto Hashimoto,Donghui Lu,Jonathan Denlinger,Chris Jozwiak,Aaron Bostwick,Eli Rotenberg,Luis Balicas,Robert Birgeneau,Matthew S. Foster,Ming Yi,Yan Sun,Emilia Morosan###
(467255, 467255)
 Here, using a combination ofangle-resolved photoemission spectroscopy and quantum oscillation measurements,together with density functional theory calculations, we identify thesquare-net compound EuGa4 as a new magnetic Weyl nodal ring (NR) semimetal, inwhich the line nodes form closed rings in the vicinity of the Fermi level.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 2, 'K', 2],[92.0, 14, 'T', 2],[110.0, 200, ',', 2],[112.0, 0, '%', 2],[170.0, 40, 'T', 3]

N
###Weyl nodal ring states and Landau quantization with very large magnetoresistance in square-net magnet EuGa$_4$|Shiming Lei,Kevin Allen,Jianwei Huang,Jaime M. Moya,Tsz Chun Wu,Brian Casas,Yichen Zhang,Ji Seop Oh,Makoto Hashimoto,Donghui Lu,Jonathan Denlinger,Chris Jozwiak,Aaron Bostwick,Eli Rotenberg,Luis Balicas,Robert Birgeneau,Matthew S. Foster,Ming Yi,Yan Sun,Emilia Morosan###
(467302, 467302)
Remarkably, the Weyl NR<missing VAR> states show distinct Landau quantization with clearspin splitting upon application of a magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 2, 'K', 1],[45.0, 14, 'T', 1],[63.0, 200, ',', 1],[65.0, 0, '%', 1],[123.0, 40, 'T', 2]

At
###Weyl nodal ring states and Landau quantization with very large magnetoresistance in square-net magnet EuGa$_4$|Shiming Lei,Kevin Allen,Jianwei Huang,Jaime M. Moya,Tsz Chun Wu,Brian Casas,Yichen Zhang,Ji Seop Oh,Makoto Hashimoto,Donghui Lu,Jonathan Denlinger,Chris Jozwiak,Aaron Bostwick,Eli Rotenberg,Luis Balicas,Robert Birgeneau,Matthew S. Foster,Ming Yi,Yan Sun,Emilia Morosan###
(467337, 467337)
 At 2 K in a field of 14 T,the transverse magnetoresistance of EuGa4 exceeds 200,000%, which is more thantwo orders of magnitude larger than that of other known magnetic T<missing VAR>SMs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[1.0, 2, 'K', 0],[10.0, 14, 'T', 0],[28.0, 200, ',', 0],[30.0, 0, '%', 0],[88.0, 40, 'T', 1]

EuGa4
###Weyl nodal ring states and Landau quantization with very large magnetoresistance in square-net magnet EuGa$_4$|Shiming Lei,Kevin Allen,Jianwei Huang,Jaime M. Moya,Tsz Chun Wu,Brian Casas,Yichen Zhang,Ji Seop Oh,Makoto Hashimoto,Donghui Lu,Jonathan Denlinger,Chris Jozwiak,Aaron Bostwick,Eli Rotenberg,Luis Balicas,Robert Birgeneau,Matthew S. Foster,Ming Yi,Yan Sun,Emilia Morosan###
(467359, 467361)
 At 2 K in a field of 14 T,the transverse magnetoresistance of EuGa4 exceeds 200,000%, which is more thantwo orders of magnitude larger than that of other known magnetic T<missing VAR>SMs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 2, 'K', 0],[12.0, 14, 'T', 0],[4.0, 200, ',', 0],[6.0, 0, '%', 0],[64.0, 40, 'T', 1]

S
###Weyl nodal ring states and Landau quantization with very large magnetoresistance in square-net magnet EuGa$_4$|Shiming Lei,Kevin Allen,Jianwei Huang,Jaime M. Moya,Tsz Chun Wu,Brian Casas,Yichen Zhang,Ji Seop Oh,Makoto Hashimoto,Donghui Lu,Jonathan Denlinger,Chris Jozwiak,Aaron Bostwick,Eli Rotenberg,Luis Balicas,Robert Birgeneau,Matthew S. Foster,Ming Yi,Yan Sun,Emilia Morosan###
(467403, 467403)
 At 2 K in a field of 14 T,the transverse magnetoresistance of EuGa4 exceeds 200,000%, which is more thantwo orders of magnitude larger than that of other known magnetic T<missing VAR>SMs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 2, 'K', 0],[56.0, 14, 'T', 0],[38.0, 200, ',', 0],[36.0, 0, '%', 0],[22.0, 40, 'T', 1]

N
###Weyl nodal ring states and Landau quantization with very large magnetoresistance in square-net magnet EuGa$_4$|Shiming Lei,Kevin Allen,Jianwei Huang,Jaime M. Moya,Tsz Chun Wu,Brian Casas,Yichen Zhang,Ji Seop Oh,Makoto Hashimoto,Donghui Lu,Jonathan Denlinger,Chris Jozwiak,Aaron Bostwick,Eli Rotenberg,Luis Balicas,Robert Birgeneau,Matthew S. Foster,Ming Yi,Yan Sun,Emilia Morosan###
(467463, 467463)
 Ourtheoretical model indicates that the nonsaturating MR naturally arises as aconsequence of the Weyl NR<missing VAR> state.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 2, 'K', 2],[116.0, 14, 'T', 2],[98.0, 200, ',', 2],[96.0, 0, '%', 2],[38.0, 40, 'T', 1]

N
###Weyl nodal ring states and Landau quantization with very large magnetoresistance in square-net magnet EuGa$_4$|Shiming Lei,Kevin Allen,Jianwei Huang,Jaime M. Moya,Tsz Chun Wu,Brian Casas,Yichen Zhang,Ji Seop Oh,Makoto Hashimoto,Donghui Lu,Jonathan Denlinger,Chris Jozwiak,Aaron Bostwick,Eli Rotenberg,Luis Balicas,Robert Birgeneau,Matthew S. Foster,Ming Yi,Yan Sun,Emilia Morosan###
(467488, 467488)
 Our work thus point to the realization ofWeyl NR<missing VAR> states in square-net magnetic materials, and opens new avenues for thedesign of magnetic T<missing VAR>SMs with very large magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 2, 'K', 3],[141.0, 14, 'T', 3],[123.0, 200, ',', 3],[121.0, 0, '%', 3],[63.0, 40, 'T', 2]

S
###Weyl nodal ring states and Landau quantization with very large magnetoresistance in square-net magnet EuGa$_4$|Shiming Lei,Kevin Allen,Jianwei Huang,Jaime M. Moya,Tsz Chun Wu,Brian Casas,Yichen Zhang,Ji Seop Oh,Makoto Hashimoto,Donghui Lu,Jonathan Denlinger,Chris Jozwiak,Aaron Bostwick,Eli Rotenberg,Luis Balicas,Robert Birgeneau,Matthew S. Foster,Ming Yi,Yan Sun,Emilia Morosan###
(467524, 467524)
 Our work thus point to the realization ofWeyl NR<missing VAR> states in square-net magnetic materials, and opens new avenues for thedesign of magnetic T<missing VAR>SMs with very large magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, 2, 'K', 3],[177.0, 14, 'T', 3],[159.0, 200, ',', 3],[157.0, 0, '%', 3],[99.0, 40, 'T', 2]

Pr2Ir2O7
###Observation of Fermi liquid phase with broken symmetry in a single crystalline nanorod of Pr$_2$Ir$_2$O$_7$|Bikash Ghosh,Abhishek Juyal,Sourav Biswas,R. Rawat,Arijit Kundu,Soumik Mukhopadhyay###
(467572, 467577)
Observation of Fermi liquid phase with broken symmetry in a single crystalline nanorod of Pr2Ir2O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6363636363636364,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pr2
###Observation of Fermi liquid phase with broken symmetry in a single crystalline nanorod of Pr$_2$Ir$_2$O$_7$|Bikash Ghosh,Abhishek Juyal,Sourav Biswas,R. Rawat,Arijit Kundu,Soumik Mukhopadhyay###
(467619, 467620)
 We report experimental evidence of emergent broken symmetry Fermi liquidstate in an isolated single crystalline nanorod of rm Pr2 Ir2 O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ir2
###Observation of Fermi liquid phase with broken symmetry in a single crystalline nanorod of Pr$_2$Ir$_2$O$_7$|Bikash Ghosh,Abhishek Juyal,Sourav Biswas,R. Rawat,Arijit Kundu,Soumik Mukhopadhyay###
(467622, 467623)
 We report experimental evidence of emergent broken symmetry Fermi liquidstate in an isolated single crystalline nanorod of rm Pr2 Ir2 O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O7
###Observation of Fermi liquid phase with broken symmetry in a single crystalline nanorod of Pr$_2$Ir$_2$O$_7$|Bikash Ghosh,Abhishek Juyal,Sourav Biswas,R. Rawat,Arijit Kundu,Soumik Mukhopadhyay###
(467625, 467626)
 We report experimental evidence of emergent broken symmetry Fermi liquidstate in an isolated single crystalline nanorod of rm Pr2 Ir2 O7.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrIrO3/La0.7Sr0.3MnO3
###Spin mixing conductance and spin magnetoresistance of iridate/manganite interface|G. A. Ovsyannikov,K. Y. Constantinian,V. A. Shmakov,A. L. Klimov,E. A. Kalachev,A. V. Shadrin,N. V. Andreev,F. O. Milovich,A. P. Orlov,P. V. Lega###
(468060, 468071)
 We present results on experimental studies of spin current, measured underspin pumping at ferromag-netic resonance in wide frequency band 2-20 G<missing VAR>Hz forSrIrO3/La0.7Sr0.3MnO3 heterostructures fabricated by R<missing VAR>F magnetron sputtering athigh temperature.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

F
###Spin mixing conductance and spin magnetoresistance of iridate/manganite interface|G. A. Ovsyannikov,K. Y. Constantinian,V. A. Shmakov,A. L. Klimov,E. A. Kalachev,A. V. Shadrin,N. V. Andreev,F. O. Milovich,A. P. Orlov,P. V. Lega###
(468080, 468080)
 We present results on experimental studies of spin current, measured underspin pumping at ferromag-netic resonance in wide frequency band 2-20 G<missing VAR>Hz forSrIrO3/La0.7Sr0.3MnO3 heterostructures fabricated by R<missing VAR>F magnetron sputtering athigh temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrIrO3
###Spin mixing conductance and spin magnetoresistance of iridate/manganite interface|G. A. Ovsyannikov,K. Y. Constantinian,V. A. Shmakov,A. L. Klimov,E. A. Kalachev,A. V. Shadrin,N. V. Andreev,F. O. Milovich,A. P. Orlov,P. V. Lega###
(468235, 468238)
 We show that both real and imaginaryparts of spin mixing conductance are valuable for heterostructures with strongspin-orbit interaction in SrIrO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.7Sr0.3MnO3
###Spin mixing conductance and spin magnetoresistance of iridate/manganite interface|G. A. Ovsyannikov,K. Y. Constantinian,V. A. Shmakov,A. L. Klimov,E. A. Kalachev,A. V. Shadrin,N. V. Andreev,F. O. Milovich,A. P. Orlov,P. V. Lega###
(468276, 468282)
 Imaginary part of spin mixing conductance wasestimated by means of shift of ferromagnetic resonance field of La0.7Sr0.3MnO3layer in heterostructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin mixing conductance and spin magnetoresistance of iridate/manganite interface|G. A. Ovsyannikov,K. Y. Constantinian,V. A. Shmakov,A. L. Klimov,E. A. Kalachev,A. V. Shadrin,N. V. Andreev,F. O. Milovich,A. P. Orlov,P. V. Lega###
(468327, 468327)
 In order to extract the influence of anisotropicmagnetoresistance a La0.7Sr0.3MnO3 film was measured as well.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.7Sr0.3MnO3
###Spin mixing conductance and spin magnetoresistance of iridate/manganite interface|G. A. Ovsyannikov,K. Y. Constantinian,V. A. Shmakov,A. L. Klimov,E. A. Kalachev,A. V. Shadrin,N. V. Andreev,F. O. Milovich,A. P. Orlov,P. V. Lega###
(468348, 468354)
 In order to extract the influence of anisotropicmagnetoresistance a La0.7Sr0.3MnO3 film was measured as well.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Spin mixing conductance and spin magnetoresistance of iridate/manganite interface|G. A. Ovsyannikov,K. Y. Constantinian,V. A. Shmakov,A. L. Klimov,E. A. Kalachev,A. V. Shadrin,N. V. Andreev,F. O. Milovich,A. P. Orlov,P. V. Lega###
(468392, 468392)
 The spin Hallangle for heterostructure was found higher than for interface Pt/La0.7Sr0.3MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.7Sr0.3MnO3
###Spin mixing conductance and spin magnetoresistance of iridate/manganite interface|G. A. Ovsyannikov,K. Y. Constantinian,V. A. Shmakov,A. L. Klimov,E. A. Kalachev,A. V. Shadrin,N. V. Andreev,F. O. Milovich,A. P. Orlov,P. V. Lega###
(468396, 468402)
 The spin Hallangle for heterostructure was found higher than for interface Pt/La0.7Sr0.3MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Quantum magnetoresistance of Weyl semimetals with strong Coulomb disorder|Ya. I. Rodionov,K. I. Kugel,B. A. Aronzon###
(468556, 468556)
 Using thediagrammatic technique and the Keldysh model to sum up the leading terms in thediagrammatic expansion, we find that the linear magnetoresistance exhibits astrong renormalization due to the long-range nature of the Coulomb interactionrhoxx propto Hln(e<missing VAR>Hhbar v<missing VAR>2/cT2rm imp),  Omegaalpha-1/6llT<missing VAR>rm impll Omega/alpha-3/4, where Omega  v<missing VAR>sqrt2e<missing VAR>Hhbar/c<missing VAR> isthe distance between the zeroth and the first Landau levels, T<missing VAR>rm imphbarvn1/3rm imp measures the strength of the impurity potential in terms ofthe impurity concentration n<missing VAR> and the Fermi velocity v<missing VAR>, and alpha e<missing VAR>2/hbar v<missing VAR> is the effective fine structure constant of the material.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 4, ',', 0]

H
###Quantum magnetoresistance of Weyl semimetals with strong Coulomb disorder|Ya. I. Rodionov,K. I. Kugel,B. A. Aronzon###
(468560, 468560)
 Using thediagrammatic technique and the Keldysh model to sum up the leading terms in thediagrammatic expansion, we find that the linear magnetoresistance exhibits astrong renormalization due to the long-range nature of the Coulomb interactionrhoxx propto Hln(e<missing VAR>Hhbar v<missing VAR>2/cT2rm imp),  Omegaalpha-1/6llT<missing VAR>rm impll Omega/alpha-3/4, where Omega  v<missing VAR>sqrt2e<missing VAR>Hhbar/c<missing VAR> isthe distance between the zeroth and the first Landau levels, T<missing VAR>rm imphbarvn1/3rm imp measures the strength of the impurity potential in terms ofthe impurity concentration n<missing VAR> and the Fermi velocity v<missing VAR>, and alpha e<missing VAR>2/hbar v<missing VAR> is the effective fine structure constant of the material.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 4, ',', 0]

H
###Quantum magnetoresistance of Weyl semimetals with strong Coulomb disorder|Ya. I. Rodionov,K. I. Kugel,B. A. Aronzon###
(468609, 468609)
 Using thediagrammatic technique and the Keldysh model to sum up the leading terms in thediagrammatic expansion, we find that the linear magnetoresistance exhibits astrong renormalization due to the long-range nature of the Coulomb interactionrhoxx propto Hln(e<missing VAR>Hhbar v<missing VAR>2/cT2rm imp),  Omegaalpha-1/6llT<missing VAR>rm impll Omega/alpha-3/4, where Omega  v<missing VAR>sqrt2e<missing VAR>Hhbar/c<missing VAR> isthe distance between the zeroth and the first Landau levels, T<missing VAR>rm imphbarvn1/3rm imp measures the strength of the impurity potential in terms ofthe impurity concentration n<missing VAR> and the Fermi velocity v<missing VAR>, and alpha e<missing VAR>2/hbar v<missing VAR> is the effective fine structure constant of the material.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 4, ',', 0]

As
###Quantum magnetoresistance of Weyl semimetals with strong Coulomb disorder|Ya. I. Rodionov,K. I. Kugel,B. A. Aronzon###
(468725, 468725)
 Asdisorder becomes even stronger (but still in the parametric range, where theCoulomb interaction can be treated as a long-range one), we find that themagnetoresistivity becomes quadratic in the magnetic field rhoxxproptoH2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 4, ',', 1]

H2
###Quantum magnetoresistance of Weyl semimetals with strong Coulomb disorder|Ya. I. Rodionov,K. I. Kugel,B. A. Aronzon###
(468805, 468806)
 Asdisorder becomes even stronger (but still in the parametric range, where theCoulomb interaction can be treated as a long-range one), we find that themagnetoresistivity becomes quadratic in the magnetic field rhoxxproptoH2.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[208.0, 4, ',', 1]

ZrSiSe
###Unreliability of two-band model analysis of magnetoresistivities in unveiling temperature-driven Lifshitz transition|Jing Xu,Yu Wang,Samuel E. Pate,Yanglin Zhu,Zhiqiang Mao,Xufeng Zhang,Xiuquan Zhou,Ulrich Welp,Wai-Kwong Kwok,Duck Young Chung,Mercouri G. Kanatzidis,Zhi-Li Xiao###
(468964, 468966)
 For instance,two temperature-driven Lifshitz transitions were inferred to exist in the Diracnodal-line semimetal ZrSiSe, based on two-band model analysis of the Hallmagnetoconductivities where the second band exhibits a change in the carriertype from holes to electrons when the temperature decreases below T<missing VAR>  106 K anda dip is observed in the mobility versus temperature curve at T<missing VAR>  80 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 106, 'K', 0],[96.0, 80, 'K', 0],[176.0, 80, 'K', 2]

ZrSiSe
###Unreliability of two-band model analysis of magnetoresistivities in unveiling temperature-driven Lifshitz transition|Jing Xu,Yu Wang,Samuel E. Pate,Yanglin Zhu,Zhiqiang Mao,Xufeng Zhang,Xiuquan Zhou,Ulrich Welp,Wai-Kwong Kwok,Duck Young Chung,Mercouri G. Kanatzidis,Zhi-Li Xiao###
(469089, 469091)
 Here,we revisit the experiments and two-band model analysis on ZrSiSe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 106, 'K', 1],[27.0, 80, 'K', 1],[51.0, 80, 'K', 1]

ZrSiSe
###Unreliability of two-band model analysis of magnetoresistivities in unveiling temperature-driven Lifshitz transition|Jing Xu,Yu Wang,Samuel E. Pate,Yanglin Zhu,Zhiqiang Mao,Xufeng Zhang,Xiuquan Zhou,Ulrich Welp,Wai-Kwong Kwok,Duck Young Chung,Mercouri G. Kanatzidis,Zhi-Li Xiao###
(469242, 469244)
 Our skepticism on theexistence of such phase transitions in ZrSiSe is further supported by thevalidation of the Kohlers<missing VAR> rule for magnetoresistances at temperatures below180 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[209.0, 106, 'K', 4],[180.0, 80, 'K', 4],[100.0, 80, 'K', 2]

K
###Unreliability of two-band model analysis of magnetoresistivities in unveiling temperature-driven Lifshitz transition|Jing Xu,Yu Wang,Samuel E. Pate,Yanglin Zhu,Zhiqiang Mao,Xufeng Zhang,Xiuquan Zhou,Ulrich Welp,Wai-Kwong Kwok,Duck Young Chung,Mercouri G. Kanatzidis,Zhi-Li Xiao###
(469281, 469281)
 Our skepticism on theexistence of such phase transitions in ZrSiSe is further supported by thevalidation of the Kohlers<missing VAR> rule for magnetoresistances at temperatures below180 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[248.0, 106, 'K', 4],[219.0, 80, 'K', 4],[139.0, 80, 'K', 2]

In
###Magnetotransport on quantum spin Hall edge coupled to bulk midgap states|Youjian Chen,Wenjin Zhao,Elliott Runburg,David Cobden,D. A. Pesin###
(469437, 469437)
In the presence of a magnetic field, the midgap levels are spin-split, andhybridization of these levels with the itinerant edge states leads tobackscattering, and the ensuing increase in the resistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Magnetotransport on quantum spin Hall edge coupled to bulk midgap states|Youjian Chen,Wenjin Zhao,Elliott Runburg,David Cobden,D. A. Pesin###
(469618, 469620)
 We use thedeveloped theory to fit the experimental data for the magnetoresistance formonolayer WTe2 at liquid helium temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Magnetotransport on quantum spin Hall edge coupled to bulk midgap states|Youjian Chen,Wenjin Zhao,Elliott Runburg,David Cobden,D. A. Pesin###
(469679, 469681)
 The results of the fittingsuggest that the cusp-like behavior of the resistance in weak magnetic fieldsobserved in experiments on monolayer WTe2 with long edge channels mightindeed be explained by hybridization of the helical edge states with spin-splitbulk midgap states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magnetotransport on quantum spin Hall edge coupled to bulk midgap states|Youjian Chen,Wenjin Zhao,Elliott Runburg,David Cobden,D. A. Pesin###
(469728, 469728)
 In particular, the dependence of the magnetoresistance onthe direction of the external magnetic field is well described by theincoherent edge transport theory, at the same time being quite distinct fromthe one expected for a magnetic-field-induced edge gap.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ag
###Planar Hall effect, Anisotropic magnetoresistance and thermal transport studies of Ag doped PdTe$_2$|Sonika,Sunil Gagwar,C. S. Yadav###
(470290, 470290)
Planar Hall effect, Anisotropic magnetoresistance and thermal transport studies of Ag doped PdTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[417.0, 3, 'times', 9]

PdTe2
###Planar Hall effect, Anisotropic magnetoresistance and thermal transport studies of Ag doped PdTe$_2$|Sonika,Sunil Gagwar,C. S. Yadav###
(470294, 470296)
Planar Hall effect, Anisotropic magnetoresistance and thermal transport studies of Ag doped PdTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[411.0, 3, 'times', 9]

PH
###Planar Hall effect, Anisotropic magnetoresistance and thermal transport studies of Ag doped PdTe$_2$|Sonika,Sunil Gagwar,C. S. Yadav###
(470310, 470311)
 Observation of planar Hall effect (PHE) in topological materials has been asubject of great interest in the recent years, owing to its intriguing originbecause of the observation of chiral anomaly and anisotropic orbitalmagnetoresistance (MR).
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[396.0, 3, 'times', 8]

Ag
###Planar Hall effect, Anisotropic magnetoresistance and thermal transport studies of Ag doped PdTe$_2$|Sonika,Sunil Gagwar,C. S. Yadav###
(470427, 470427)
 Here, we report the planar Hall effect,magnetoresistance and thermal transport properties (Seebeck and Nernstcoefficients) on the Ag intercalated PdTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[280.0, 3, 'times', 7]

PdTe2
###Planar Hall effect, Anisotropic magnetoresistance and thermal transport studies of Ag doped PdTe$_2$|Sonika,Sunil Gagwar,C. S. Yadav###
(470431, 470433)
 Here, we report the planar Hall effect,magnetoresistance and thermal transport properties (Seebeck and Nernstcoefficients) on the Ag intercalated PdTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[274.0, 3, 'times', 7]

PH
###Planar Hall effect, Anisotropic magnetoresistance and thermal transport studies of Ag doped PdTe$_2$|Sonika,Sunil Gagwar,C. S. Yadav###
(470462, 470463)
 We observed positivelongitudinal magnetoresistance, linear field dependence of the amplitude of PHE<missing VAR>(Deltarho), and the absence of electric and chiral charge coupling.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[244.0, 3, 'times', 6]

PdTe2
###Planar Hall effect, Anisotropic magnetoresistance and thermal transport studies of Ag doped PdTe$_2$|Sonika,Sunil Gagwar,C. S. Yadav###
(470553, 470555)
 These results in congruencewith the results on PdTe2 and Cu0.05PdTe2 point towards theimportance of Fermi surface anisotropies in understanding the origin of PHE<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 3, 'times', 3]

Cu0.05PdTe2
###Planar Hall effect, Anisotropic magnetoresistance and thermal transport studies of Ag doped PdTe$_2$|Sonika,Sunil Gagwar,C. S. Yadav###
(470559, 470563)
 These results in congruencewith the results on PdTe2 and Cu0.05PdTe2 point towards theimportance of Fermi surface anisotropies in understanding the origin of PHE<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.01639344262295082,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3278688524590164,0,0,0,0,0,0.6557377049180328,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 3, 'times', 3]

PH
###Planar Hall effect, Anisotropic magnetoresistance and thermal transport studies of Ag doped PdTe$_2$|Sonika,Sunil Gagwar,C. S. Yadav###
(470592, 470593)
 These results in congruencewith the results on PdTe2 and Cu0.05PdTe2 point towards theimportance of Fermi surface anisotropies in understanding the origin of PHE<missing VAR>.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 3, 'times', 3]

S
###Planar Hall effect, Anisotropic magnetoresistance and thermal transport studies of Ag doped PdTe$_2$|Sonika,Sunil Gagwar,C. S. Yadav###
(470613, 470613)
Further, we have shown the Seebeck (itS) and Nernst (nu) coefficientsfor PdTe2 and Cu and Ag intercalated compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 3, 'times', 2]

PdTe2
###Planar Hall effect, Anisotropic magnetoresistance and thermal transport studies of Ag doped PdTe$_2$|Sonika,Sunil Gagwar,C. S. Yadav###
(470629, 470631)
Further, we have shown the Seebeck (itS) and Nernst (nu) coefficientsfor PdTe2 and Cu and Ag intercalated compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 3, 'times', 2]

Cu
###Planar Hall effect, Anisotropic magnetoresistance and thermal transport studies of Ag doped PdTe$_2$|Sonika,Sunil Gagwar,C. S. Yadav###
(470635, 470635)
Further, we have shown the Seebeck (itS) and Nernst (nu) coefficientsfor PdTe2 and Cu and Ag intercalated compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 3, 'times', 2]

Ag
###Planar Hall effect, Anisotropic magnetoresistance and thermal transport studies of Ag doped PdTe$_2$|Sonika,Sunil Gagwar,C. S. Yadav###
(470639, 470639)
Further, we have shown the Seebeck (itS) and Nernst (nu) coefficientsfor PdTe2 and Cu and Ag intercalated compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 3, 'times', 2]

K
###Planar Hall effect, Anisotropic magnetoresistance and thermal transport studies of Ag doped PdTe$_2$|Sonika,Sunil Gagwar,C. S. Yadav###
(470665, 470665)
 We observed two phonon dragpeaks (at sim9 K, and sim50 K) for these compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 3, 'times', 1]

K
###Planar Hall effect, Anisotropic magnetoresistance and thermal transport studies of Ag doped PdTe$_2$|Sonika,Sunil Gagwar,C. S. Yadav###
(470673, 470673)
 We observed two phonon dragpeaks (at sim9 K, and sim50 K) for these compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 3, 'times', 1]

Ag0.05PdTe2
###Planar Hall effect, Anisotropic magnetoresistance and thermal transport studies of Ag doped PdTe$_2$|Sonika,Sunil Gagwar,C. S. Yadav###
(470698, 470702)
 The estimatedvalue of Fermi energy for Ag0.05PdTe2 is sim 3 times that ofPdTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3278688524590164,0.01639344262295082,0,0,0,0,0.6557377049180328,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 3, 'times', 0]

PdTe2
###Planar Hall effect, Anisotropic magnetoresistance and thermal transport studies of Ag doped PdTe$_2$|Sonika,Sunil Gagwar,C. S. Yadav###
(470714, 470716)
 The estimatedvalue of Fermi energy for Ag0.05PdTe2 is sim 3 times that ofPdTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 3, 'times', 0]

Sr1-x
###High magnetic field evolution of the in-plane angular magnetoresistance of electron-doped Sr1-xLaxCuO2 in the normal state|V. P. Jovanović,H. Raffy,Z. Z. Li,G. Reményi,P. Monceau###
(470753, 470756)
High magnetic field evolution of the in-plane angular magnetoresistance of electron-doped Sr1-xLaxCuO2 in the normal state.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[120.0, 22, 'T', 2],[364.0, 16, 'T', 7],[371.0, 17, 'T', 7]

CuO2
###High magnetic field evolution of the in-plane angular magnetoresistance of electron-doped Sr1-xLaxCuO2 in the normal state|V. P. Jovanović,H. Raffy,Z. Z. Li,G. Reményi,P. Monceau###
(470758, 470760)
High magnetic field evolution of the in-plane angular magnetoresistance of electron-doped Sr1-xLaxCuO2 in the normal state.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 22, 'T', 2],[360.0, 16, 'T', 7],[367.0, 17, 'T', 7]

Sr1-x
###High magnetic field evolution of the in-plane angular magnetoresistance of electron-doped Sr1-xLaxCuO2 in the normal state|V. P. Jovanović,H. Raffy,Z. Z. Li,G. Reményi,P. Monceau###
(470808, 470811)
 We studied the in-plane angular magnetoresistance (AMR), in the normal state,of underdoped superconducting Sr1-xLaxCuO2 , which has the simplest crystalstructure among cuprates.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[65.0, 22, 'T', 1],[309.0, 16, 'T', 6],[316.0, 17, 'T', 6]

CuO2
###High magnetic field evolution of the in-plane angular magnetoresistance of electron-doped Sr1-xLaxCuO2 in the normal state|V. P. Jovanović,H. Raffy,Z. Z. Li,G. Reményi,P. Monceau###
(470813, 470815)
 We studied the in-plane angular magnetoresistance (AMR), in the normal state,of underdoped superconducting Sr1-xLaxCuO2 , which has the simplest crystalstructure among cuprates.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 22, 'T', 1],[305.0, 16, 'T', 6],[312.0, 17, 'T', 6]

H
###High magnetic field evolution of the in-plane angular magnetoresistance of electron-doped Sr1-xLaxCuO2 in the normal state|V. P. Jovanović,H. Raffy,Z. Z. Li,G. Reményi,P. Monceau###
(470870, 470870)
 The measurements of two underdoped thin films withdifferent dopings were performed in intense magnetic field H (up to 22 T).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 22, 'T', 0],[250.0, 16, 'T', 5],[257.0, 17, 'T', 5]

H
###High magnetic field evolution of the in-plane angular magnetoresistance of electron-doped Sr1-xLaxCuO2 in the normal state|V. P. Jovanović,H. Raffy,Z. Z. Li,G. Reményi,P. Monceau###
(470904, 470904)
 Thelongitudinal magnetoresistance at temperature T<missing VAR> is negative and scales withH/T<missing VAR>.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 22, 'T', 1],[216.0, 16, 'T', 4],[223.0, 17, 'T', 4]

H
###High magnetic field evolution of the in-plane angular magnetoresistance of electron-doped Sr1-xLaxCuO2 in the normal state|V. P. Jovanović,H. Raffy,Z. Z. Li,G. Reményi,P. Monceau###
(470939, 470939)
 For both samples, the AMR is anisotropic and shows an unexpecteddependence on H intensity.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 22, 'T', 2],[181.0, 16, 'T', 3],[188.0, 17, 'T', 3]

As
###High magnetic field evolution of the in-plane angular magnetoresistance of electron-doped Sr1-xLaxCuO2 in the normal state|V. P. Jovanović,H. Raffy,Z. Z. Li,G. Reményi,P. Monceau###
(471130, 471130)
 As a result, at thehigh magnetic field above Hc, the angular dependence of the in-planemagnetoresistance turns out to be the same for both samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[254.0, 22, 'T', 6],[10.0, 16, 'T', 1],[3.0, 17, 'T', 1]

CuO2
###High magnetic field evolution of the in-plane angular magnetoresistance of electron-doped Sr1-xLaxCuO2 in the normal state|V. P. Jovanović,H. Raffy,Z. Z. Li,G. Reményi,P. Monceau###
(471218, 471220)
 We tentativelyascribe the above features to the presence of anti-ferromagnetism in the CuO2planes of underdoped Sr1-xLaxCuO2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[342.0, 22, 'T', 7],[98.0, 16, 'T', 2],[91.0, 17, 'T', 2]

Sr1-x
###High magnetic field evolution of the in-plane angular magnetoresistance of electron-doped Sr1-xLaxCuO2 in the normal state|V. P. Jovanović,H. Raffy,Z. Z. Li,G. Reményi,P. Monceau###
(471229, 471232)
 We tentativelyascribe the above features to the presence of anti-ferromagnetism in the CuO2planes of underdoped Sr1-xLaxCuO2.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[353.0, 22, 'T', 7],[109.0, 16, 'T', 2],[102.0, 17, 'T', 2]

CuO2
###High magnetic field evolution of the in-plane angular magnetoresistance of electron-doped Sr1-xLaxCuO2 in the normal state|V. P. Jovanović,H. Raffy,Z. Z. Li,G. Reményi,P. Monceau###
(471234, 471236)
 We tentativelyascribe the above features to the presence of anti-ferromagnetism in the CuO2planes of underdoped Sr1-xLaxCuO2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[358.0, 22, 'T', 7],[114.0, 16, 'T', 2],[107.0, 17, 'T', 2]

PrAlGe
###Ambient and high-pressure electrical transport and structural investigations of magnetic Weyl semimetal PrAlGe|U. Dutta,P. Král,M. Míšek,B. Joseph,J. Kaštil###
(471273, 471275)
Ambient and high-pressure electrical transport and structural investigations of magnetic Weyl semimetal PrAlGe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 15.1, 'K', 2],[107.0, 1.4, 'K', 4],[133.0, 47, 'K', 4],[136.0, 23.0, 'GPa', 4],[267.0, 12.5, 'GPa', 7],[402.0, 11, 'GPa', 9]

PrAlGe
###Ambient and high-pressure electrical transport and structural investigations of magnetic Weyl semimetal PrAlGe|U. Dutta,P. Král,M. Míšek,B. Joseph,J. Kaštil###
(471313, 471315)
 We present ambient and high-pressure electrical transport and structuralproperties of recently discovered magnetic Weyl semimetal PrAlGe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 15.1, 'K', 1],[67.0, 1.4, 'K', 3],[93.0, 47, 'K', 3],[96.0, 23.0, 'GPa', 3],[227.0, 12.5, 'GPa', 6],[362.0, 11, 'GPa', 8]

C
###Ambient and high-pressure electrical transport and structural investigations of magnetic Weyl semimetal PrAlGe|U. Dutta,P. Král,M. Míšek,B. Joseph,J. Kaštil###
(471338, 471338)
 Electricalresistivity at ambient pressure shows an anomaly at T<missing VAR>C  15.1 K related tothe ferromagnetic transition.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 15.1, 'K', 0],[44.0, 1.4, 'K', 2],[70.0, 47, 'K', 2],[73.0, 23.0, 'GPa', 2],[204.0, 12.5, 'GPa', 5],[339.0, 11, 'GPa', 7]

H
###Ambient and high-pressure electrical transport and structural investigations of magnetic Weyl semimetal PrAlGe|U. Dutta,P. Král,M. Míšek,B. Joseph,J. Kaštil###
(471362, 471362)
 Anomalous Hall effect (AHE) is observed belowT<missing VAR>C.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 15.1, 'K', 1],[20.0, 1.4, 'K', 1],[46.0, 47, 'K', 1],[49.0, 23.0, 'GPa', 1],[180.0, 12.5, 'GPa', 4],[315.0, 11, 'GPa', 6]

C
###Ambient and high-pressure electrical transport and structural investigations of magnetic Weyl semimetal PrAlGe|U. Dutta,P. Král,M. Míšek,B. Joseph,J. Kaštil###
(471374, 471374)
 Anomalous Hall effect (AHE) is observed belowT<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 15.1, 'K', 1],[8.0, 1.4, 'K', 1],[34.0, 47, 'K', 1],[37.0, 23.0, 'GPa', 1],[168.0, 12.5, 'GPa', 4],[303.0, 11, 'GPa', 6]

Pa
###Ambient and high-pressure electrical transport and structural investigations of magnetic Weyl semimetal PrAlGe|U. Dutta,P. Král,M. Míšek,B. Joseph,J. Kaštil###
(471385, 471385)
 We observe a 1.4 K/G<missing VAR>Pa increase of T<missing VAR>C with pressure, resulting inT<missing VAR>C approx 47 K at 23.0 GPa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 15.1, 'K', 2],[3.0, 1.4, 'K', 0],[23.0, 47, 'K', 0],[26.0, 23.0, 'GPa', 0],[157.0, 12.5, 'GPa', 3],[292.0, 11, 'GPa', 5]

C
###Ambient and high-pressure electrical transport and structural investigations of magnetic Weyl semimetal PrAlGe|U. Dutta,P. Král,M. Míšek,B. Joseph,J. Kaštil###
(471392, 471392)
 We observe a 1.4 K/G<missing VAR>Pa increase of T<missing VAR>C with pressure, resulting inT<missing VAR>C approx 47 K at 23.0 GPa.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 15.1, 'K', 2],[10.0, 1.4, 'K', 0],[16.0, 47, 'K', 0],[19.0, 23.0, 'GPa', 0],[150.0, 12.5, 'GPa', 3],[285.0, 11, 'GPa', 5]

C
###Ambient and high-pressure electrical transport and structural investigations of magnetic Weyl semimetal PrAlGe|U. Dutta,P. Král,M. Míšek,B. Joseph,J. Kaštil###
(471405, 471405)
 We observe a 1.4 K/G<missing VAR>Pa increase of T<missing VAR>C with pressure, resulting inT<missing VAR>C approx 47 K at 23.0 GPa.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 15.1, 'K', 2],[23.0, 1.4, 'K', 0],[3.0, 47, 'K', 0],[6.0, 23.0, 'GPa', 0],[137.0, 12.5, 'GPa', 3],[272.0, 11, 'GPa', 5]

As
###Ambient and high-pressure electrical transport and structural investigations of magnetic Weyl semimetal PrAlGe|U. Dutta,P. Král,M. Míšek,B. Joseph,J. Kaštil###
(471459, 471459)
 As in the ambient pressure case,the AHE<missing VAR> is found to be present below T<missing VAR>C up to the highest applied pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 15.1, 'K', 4],[77.0, 1.4, 'K', 2],[51.0, 47, 'K', 2],[48.0, 23.0, 'GPa', 2],[83.0, 12.5, 'GPa', 1],[218.0, 11, 'GPa', 3]

H
###Ambient and high-pressure electrical transport and structural investigations of magnetic Weyl semimetal PrAlGe|U. Dutta,P. Král,M. Míšek,B. Joseph,J. Kaštil###
(471476, 471476)
 As in the ambient pressure case,the AHE<missing VAR> is found to be present below T<missing VAR>C up to the highest applied pressure.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 15.1, 'K', 4],[94.0, 1.4, 'K', 2],[68.0, 47, 'K', 2],[65.0, 23.0, 'GPa', 2],[66.0, 12.5, 'GPa', 1],[201.0, 11, 'GPa', 3]

C
###Ambient and high-pressure electrical transport and structural investigations of magnetic Weyl semimetal PrAlGe|U. Dutta,P. Král,M. Míšek,B. Joseph,J. Kaštil###
(471492, 471492)
 As in the ambient pressure case,the AHE<missing VAR> is found to be present below T<missing VAR>C up to the highest applied pressure.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 15.1, 'K', 4],[110.0, 1.4, 'K', 2],[84.0, 47, 'K', 2],[81.0, 23.0, 'GPa', 2],[50.0, 12.5, 'GPa', 1],[185.0, 11, 'GPa', 3]

C
###Ambient and high-pressure electrical transport and structural investigations of magnetic Weyl semimetal PrAlGe|U. Dutta,P. Král,M. Míšek,B. Joseph,J. Kaštil###
(471529, 471529)
We observe a clear anomaly in the pressure dependence of T<missing VAR>C,magnetoresistance and Hall effect at 12.5 GPa suggesting the occurrence of apressure-induced electronic transition at this pressure.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[189.0, 15.1, 'K', 5],[147.0, 1.4, 'K', 3],[121.0, 47, 'K', 3],[118.0, 23.0, 'GPa', 3],[13.0, 12.5, 'GPa', 0],[148.0, 11, 'GPa', 2]

Pa
###Ambient and high-pressure electrical transport and structural investigations of magnetic Weyl semimetal PrAlGe|U. Dutta,P. Král,M. Míšek,B. Joseph,J. Kaštil###
(471612, 471612)
 X<missing VAR>-ray diffraction(XRD) experiment under pressure revealed the lattice structure to be stable upto sim19.6 G<missing VAR>Pa with the absence of any symmetry changing structural phasetransition from the initial I41md structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0
[272.0, 15.1, 'K', 6],[230.0, 1.4, 'K', 4],[204.0, 47, 'K', 4],[201.0, 23.0, 'GPa', 4],[70.0, 12.5, 'GPa', 1],[65.0, 11, 'GPa', 1]

I41
###Ambient and high-pressure electrical transport and structural investigations of magnetic Weyl semimetal PrAlGe|U. Dutta,P. Král,M. Míšek,B. Joseph,J. Kaštil###
(471641, 471643)
 X<missing VAR>-ray diffraction(XRD) experiment under pressure revealed the lattice structure to be stable upto sim19.6 G<missing VAR>Pa with the absence of any symmetry changing structural phasetransition from the initial I41md structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[301.0, 15.1, 'K', 6],[259.0, 1.4, 'K', 4],[233.0, 47, 'K', 4],[230.0, 23.0, 'GPa', 4],[99.0, 12.5, 'GPa', 1],[34.0, 11, 'GPa', 1]

DyNi2B2C
###Magneto-electrodynamics at high frequencies in the antiferromagnetic and superconducting states of DyNi_2B_2C|Durga P. Choudhury,H. Srikanth,S. Sridhar,; P. C. Canfield###
(471755, 471760)
Magneto-electrodynamics at high frequencies in the antiferromagnetic and superconducting states of DyNi2B2C.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 10, 'GHz', 2]

DyNi2B2C
###Magneto-electrodynamics at high frequencies in the antiferromagnetic and superconducting states of DyNi_2B_2C|Durga P. Choudhury,H. Srikanth,S. Sridhar,; P. C. Canfield###
(471798, 471803)
 We report the observation of novel behaviour in the radio frequency (rf) andmicrowave response of DyNi2B2C over a wide range of temperature (T) andmagnetic field (H) in the antiferromagnetic (AFM) and superconducting (SC)states.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 10, 'GHz', 1]

(H)
###Magneto-electrodynamics at high frequencies in the antiferromagnetic and superconducting states of DyNi_2B_2C|Durga P. Choudhury,H. Srikanth,S. Sridhar,; P. C. Canfield###
(471828, 471830)
 We report the observation of novel behaviour in the radio frequency (rf) andmicrowave response of DyNi2B2C over a wide range of temperature (T) andmagnetic field (H) in the antiferromagnetic (AFM) and superconducting (SC)states.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 10, 'GHz', 1]

F
###Magneto-electrodynamics at high frequencies in the antiferromagnetic and superconducting states of DyNi_2B_2C|Durga P. Choudhury,H. Srikanth,S. Sridhar,; P. C. Canfield###
(471840, 471840)
 We report the observation of novel behaviour in the radio frequency (rf) andmicrowave response of DyNi2B2C over a wide range of temperature (T) andmagnetic field (H) in the antiferromagnetic (AFM) and superconducting (SC)states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 10, 'GHz', 1]

(SC)
###Magneto-electrodynamics at high frequencies in the antiferromagnetic and superconducting states of DyNi_2B_2C|Durga P. Choudhury,H. Srikanth,S. Sridhar,; P. C. Canfield###
(471848, 471851)
 We report the observation of novel behaviour in the radio frequency (rf) andmicrowave response of DyNi2B2C over a wide range of temperature (T) andmagnetic field (H) in the antiferromagnetic (AFM) and superconducting (SC)states.
Featurization successful!
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 10, 'GHz', 1]

At
###Magneto-electrodynamics at high frequencies in the antiferromagnetic and superconducting states of DyNi_2B_2C|Durga P. Choudhury,H. Srikanth,S. Sridhar,; P. C. Canfield###
(471857, 471857)
 At microwave frequencies of 10 GHz, the T<missing VAR> dependence of the surfaceimpedance ZsRsiXs was measured which yields the T<missing VAR> dependence of thecomplex conductivity sigma1-i<missing VAR>sigma2 in the SC and AFM<missing VAR> states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 10, 'GHz', 0]

SC
###Magneto-electrodynamics at high frequencies in the antiferromagnetic and superconducting states of DyNi_2B_2C|Durga P. Choudhury,H. Srikanth,S. Sridhar,; P. C. Canfield###
(471924, 471925)
 At microwave frequencies of 10 GHz, the T<missing VAR> dependence of the surfaceimpedance ZsRsiXs was measured which yields the T<missing VAR> dependence of thecomplex conductivity sigma1-i<missing VAR>sigma2 in the SC and AFM<missing VAR> states.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 10, 'GHz', 0]

F
###Magneto-electrodynamics at high frequencies in the antiferromagnetic and superconducting states of DyNi_2B_2C|Durga P. Choudhury,H. Srikanth,S. Sridhar,; P. C. Canfield###
(471930, 471930)
 At microwave frequencies of 10 GHz, the T<missing VAR> dependence of the surfaceimpedance ZsRsiXs was measured which yields the T<missing VAR> dependence of thecomplex conductivity sigma1-i<missing VAR>sigma2 in the SC and AFM<missing VAR> states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 10, 'GHz', 0]

At
###Magneto-electrodynamics at high frequencies in the antiferromagnetic and superconducting states of DyNi_2B_2C|Durga P. Choudhury,H. Srikanth,S. Sridhar,; P. C. Canfield###
(471936, 471936)
 At radiofrequencies (4 M<missing VAR>Hz), the H and T<missing VAR> dependence of the penetration depthlambda(T<missing VAR>,H) were measured.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 10, 'GHz', 1]

H
###Magneto-electrodynamics at high frequencies in the antiferromagnetic and superconducting states of DyNi_2B_2C|Durga P. Choudhury,H. Srikanth,S. Sridhar,; P. C. Canfield###
(471953, 471953)
 At radiofrequencies (4 M<missing VAR>Hz), the H and T<missing VAR> dependence of the penetration depthlambda(T<missing VAR>,H) were measured.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 10, 'GHz', 1]

H
###Magneto-electrodynamics at high frequencies in the antiferromagnetic and superconducting states of DyNi_2B_2C|Durga P. Choudhury,H. Srikanth,S. Sridhar,; P. C. Canfield###
(471974, 471974)
 At radiofrequencies (4 M<missing VAR>Hz), the H and T<missing VAR> dependence of the penetration depthlambda(T<missing VAR>,H) were measured.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 10, 'GHz', 1]

N10.3
###Magneto-electrodynamics at high frequencies in the antiferromagnetic and superconducting states of DyNi_2B_2C|Durga P. Choudhury,H. Srikanth,S. Sridhar,; P. C. Canfield###
(471996, 471997)
 The establishment of antiferromagnetic order atT<missing VAR>N10.3 K results in a marked decrease in the scattering of charge carriers,leading to sharp decreases in Rs and Xs.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 10, 'GHz', 2]

K
###Magneto-electrodynamics at high frequencies in the antiferromagnetic and superconducting states of DyNi_2B_2C|Durga P. Choudhury,H. Srikanth,S. Sridhar,; P. C. Canfield###
(471999, 471999)
 The establishment of antiferromagnetic order atT<missing VAR>N10.3 K results in a marked decrease in the scattering of charge carriers,leading to sharp decreases in Rs and Xs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 10, 'GHz', 2]

F
###Magneto-electrodynamics at high frequencies in the antiferromagnetic and superconducting states of DyNi_2B_2C|Durga P. Choudhury,H. Srikanth,S. Sridhar,; P. C. Canfield###
(472069, 472069)
 However, Rs and Xs differ fromeach other in the AFM<missing VAR> state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, 10, 'GHz', 3]

N
###Magneto-electrodynamics at high frequencies in the antiferromagnetic and superconducting states of DyNi_2B_2C|Durga P. Choudhury,H. Srikanth,S. Sridhar,; P. C. Canfield###
(472154, 472154)
 The rf measurements yield a rich dependence of thescattering on the magnetic field near and below T<missing VAR>N.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[290.0, 10, 'GHz', 5]

N
###Magneto-electrodynamics at high frequencies in the antiferromagnetic and superconducting states of DyNi_2B_2C|Durga P. Choudhury,H. Srikanth,S. Sridhar,; P. C. Canfield###
(472190, 472190)
 Anomalous decrease ofscattering at moderate applied fields is observed at temperatures near andabove T<missing VAR>N, and arises due to a crossover from a negative magnetoresistancestate, possibly associated with a loss of spin disorder scattering at lowfields, to a positive magnetoresistance state associated with the metallicnature.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[326.0, 10, 'GHz', 6]

H
###Magneto-electrodynamics at high frequencies in the antiferromagnetic and superconducting states of DyNi_2B_2C|Durga P. Choudhury,H. Srikanth,S. Sridhar,; P. C. Canfield###
(472288, 472288)
 The normal state magnetoresistance is positive at all temperatures formu0H>2T<missing VAR> and at all fields for T<missing VAR>>15K.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[424.0, 10, 'GHz', 7]

K
###Magneto-electrodynamics at high frequencies in the antiferromagnetic and superconducting states of DyNi_2B_2C|Durga P. Choudhury,H. Srikanth,S. Sridhar,; P. C. Canfield###
(472306, 472306)
 The normal state magnetoresistance is positive at all temperatures formu0H>2T<missing VAR> and at all fields for T<missing VAR>>15K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[442.0, 10, 'GHz', 7]

H
###Magneto-electrodynamics at high frequencies in the antiferromagnetic and superconducting states of DyNi_2B_2C|Durga P. Choudhury,H. Srikanth,S. Sridhar,; P. C. Canfield###
(472331, 472331)
 Several characteristic field andtemperature scales associated with metamagnetic transitions (HM<missing VAR>1(T), HM<missing VAR>2(T))and onset of spin disorder HD(T), in addition to Tc, T<missing VAR>N and Hc<missing VAR>2(T) areobserved in the rf measurements.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[467.0, 10, 'GHz', 8]

H
###Magneto-electrodynamics at high frequencies in the antiferromagnetic and superconducting states of DyNi_2B_2C|Durga P. Choudhury,H. Srikanth,S. Sridhar,; P. C. Canfield###
(472339, 472339)
 Several characteristic field andtemperature scales associated with metamagnetic transitions (HM<missing VAR>1(T), HM<missing VAR>2(T))and onset of spin disorder HD(T), in addition to Tc, T<missing VAR>N and Hc<missing VAR>2(T) areobserved in the rf measurements.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[475.0, 10, 'GHz', 8]

H
###Magneto-electrodynamics at high frequencies in the antiferromagnetic and superconducting states of DyNi_2B_2C|Durga P. Choudhury,H. Srikanth,S. Sridhar,; P. C. Canfield###
(472358, 472358)
 Several characteristic field andtemperature scales associated with metamagnetic transitions (HM<missing VAR>1(T), HM<missing VAR>2(T))and onset of spin disorder HD(T), in addition to Tc, T<missing VAR>N and Hc<missing VAR>2(T) areobserved in the rf measurements.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[494.0, 10, 'GHz', 8]

N
###Magneto-electrodynamics at high frequencies in the antiferromagnetic and superconducting states of DyNi_2B_2C|Durga P. Choudhury,H. Srikanth,S. Sridhar,; P. C. Canfield###
(472376, 472376)
 Several characteristic field andtemperature scales associated with metamagnetic transitions (HM<missing VAR>1(T), HM<missing VAR>2(T))and onset of spin disorder HD(T), in addition to Tc, T<missing VAR>N and Hc<missing VAR>2(T) areobserved in the rf measurements.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[512.0, 10, 'GHz', 8]

H
###Magneto-electrodynamics at high frequencies in the antiferromagnetic and superconducting states of DyNi_2B_2C|Durga P. Choudhury,H. Srikanth,S. Sridhar,; P. C. Canfield###
(472380, 472380)
 Several characteristic field andtemperature scales associated with metamagnetic transitions (HM<missing VAR>1(T), HM<missing VAR>2(T))and onset of spin disorder HD(T), in addition to Tc, T<missing VAR>N and Hc<missing VAR>2(T) areobserved in the rf measurements.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[516.0, 10, 'GHz', 8]

P
###Magnetic field-dependent interplay between incoherent and Fermi liquid transport mechanisms in low-dimensional tau phase organic conductors|K. Storr,L. Balicas,J. S. Brooks,D. Graf,G. C. Papavassiliou###
(472479, 472479)
 We present an electrical transport study of the 2-dimensional (2D) organicconductor tau-(P-(S,S)-DMEDT-TTF)2(AuBr)2(AuBr2)y<missing VAR> (y<missing VAR>  0.75) at lowtemperatures and high magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 12, 'K', 1],[172.0, 15, 'T', 2],[222.0, 12.5, '%', 3],[271.0, 2.4, '%', 4],[276.0, 6.8, '%', 4],[365.0, 2, 'D', 5],[503.0, 2, 'D', 7],[559.0, 2, 'D', 8]

S
###Magnetic field-dependent interplay between incoherent and Fermi liquid transport mechanisms in low-dimensional tau phase organic conductors|K. Storr,L. Balicas,J. S. Brooks,D. Graf,G. C. Papavassiliou###
(472482, 472482)
 We present an electrical transport study of the 2-dimensional (2D) organicconductor tau-(P-(S,S)-DMEDT-TTF)2(AuBr)2(AuBr2)y<missing VAR> (y<missing VAR>  0.75) at lowtemperatures and high magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 12, 'K', 1],[169.0, 15, 'T', 2],[219.0, 12.5, '%', 3],[268.0, 2.4, '%', 4],[273.0, 6.8, '%', 4],[362.0, 2, 'D', 5],[500.0, 2, 'D', 7],[556.0, 2, 'D', 8]

S
###Magnetic field-dependent interplay between incoherent and Fermi liquid transport mechanisms in low-dimensional tau phase organic conductors|K. Storr,L. Balicas,J. S. Brooks,D. Graf,G. C. Papavassiliou###
(472484, 472484)
 We present an electrical transport study of the 2-dimensional (2D) organicconductor tau-(P-(S,S)-DMEDT-TTF)2(AuBr)2(AuBr2)y<missing VAR> (y<missing VAR>  0.75) at lowtemperatures and high magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 12, 'K', 1],[167.0, 15, 'T', 2],[217.0, 12.5, '%', 3],[266.0, 2.4, '%', 4],[271.0, 6.8, '%', 4],[360.0, 2, 'D', 5],[498.0, 2, 'D', 7],[554.0, 2, 'D', 8]

F
###Magnetic field-dependent interplay between incoherent and Fermi liquid transport mechanisms in low-dimensional tau phase organic conductors|K. Storr,L. Balicas,J. S. Brooks,D. Graf,G. C. Papavassiliou###
(472495, 472495)
 We present an electrical transport study of the 2-dimensional (2D) organicconductor tau-(P-(S,S)-DMEDT-TTF)2(AuBr)2(AuBr2)y<missing VAR> (y<missing VAR>  0.75) at lowtemperatures and high magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 12, 'K', 1],[156.0, 15, 'T', 2],[206.0, 12.5, '%', 3],[255.0, 2.4, '%', 4],[260.0, 6.8, '%', 4],[349.0, 2, 'D', 5],[487.0, 2, 'D', 7],[543.0, 2, 'D', 8]

(AuBr)2
###Magnetic field-dependent interplay between incoherent and Fermi liquid transport mechanisms in low-dimensional tau phase organic conductors|K. Storr,L. Balicas,J. S. Brooks,D. Graf,G. C. Papavassiliou###
(472498, 472502)
 We present an electrical transport study of the 2-dimensional (2D) organicconductor tau-(P-(S,S)-DMEDT-TTF)2(AuBr)2(AuBr2)y<missing VAR> (y<missing VAR>  0.75) at lowtemperatures and high magnetic fields.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 12, 'K', 1],[149.0, 15, 'T', 2],[199.0, 12.5, '%', 3],[248.0, 2.4, '%', 4],[253.0, 6.8, '%', 4],[342.0, 2, 'D', 5],[480.0, 2, 'D', 7],[536.0, 2, 'D', 8]

(AuBr2)
###Magnetic field-dependent interplay between incoherent and Fermi liquid transport mechanisms in low-dimensional tau phase organic conductors|K. Storr,L. Balicas,J. S. Brooks,D. Graf,G. C. Papavassiliou###
(472503, 472507)
 We present an electrical transport study of the 2-dimensional (2D) organicconductor tau-(P-(S,S)-DMEDT-TTF)2(AuBr)2(AuBr2)y<missing VAR> (y<missing VAR>  0.75) at lowtemperatures and high magnetic fields.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 12, 'K', 1],[144.0, 15, 'T', 2],[194.0, 12.5, '%', 3],[243.0, 2.4, '%', 4],[248.0, 6.8, '%', 4],[337.0, 2, 'D', 5],[475.0, 2, 'D', 7],[531.0, 2, 'D', 8]

B
###Magnetic field-dependent interplay between incoherent and Fermi liquid transport mechanisms in low-dimensional tau phase organic conductors|K. Storr,L. Balicas,J. S. Brooks,D. Graf,G. C. Papavassiliou###
(472581, 472581)
 Under a magnetic field B, both rhozz and the in-plane resistivityplane rhoxx show a pronounced negative and hysteretic magnetoresistance withShubnikov de Haas (SdH)oscillations being observed in some (highquality)samples above 15 T.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 12, 'K', 1],[70.0, 15, 'T', 0],[120.0, 12.5, '%', 1],[169.0, 2.4, '%', 2],[174.0, 6.8, '%', 2],[263.0, 2, 'D', 3],[401.0, 2, 'D', 5],[457.0, 2, 'D', 6]

H
###Magnetic field-dependent interplay between incoherent and Fermi liquid transport mechanisms in low-dimensional tau phase organic conductors|K. Storr,L. Balicas,J. S. Brooks,D. Graf,G. C. Papavassiliou###
(472630, 472630)
 Under a magnetic field B, both rhozz and the in-plane resistivityplane rhoxx show a pronounced negative and hysteretic magnetoresistance withShubnikov de Haas (SdH)oscillations being observed in some (highquality)samples above 15 T.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 12, 'K', 1],[21.0, 15, 'T', 0],[71.0, 12.5, '%', 1],[120.0, 2.4, '%', 2],[125.0, 6.8, '%', 2],[214.0, 2, 'D', 3],[352.0, 2, 'D', 5],[408.0, 2, 'D', 6]

FB
###Magnetic field-dependent interplay between incoherent and Fermi liquid transport mechanisms in low-dimensional tau phase organic conductors|K. Storr,L. Balicas,J. S. Brooks,D. Graf,G. C. Papavassiliou###
(472707, 472708)
 Contrary to the predicted single, star-shaped,closed orbit Fermi surface from band structure calculations (with an expectedapproximate area of 12.5% of AFBZ), two fundamental frequencies Fl<missing VAR> and Fh<missing VAR>are detected in the SdH signal.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 12, 'K', 2],[56.0, 15, 'T', 1],[6.0, 12.5, '%', 0],[42.0, 2.4, '%', 1],[47.0, 6.8, '%', 1],[136.0, 2, 'D', 2],[274.0, 2, 'D', 4],[330.0, 2, 'D', 5]

F
###Magnetic field-dependent interplay between incoherent and Fermi liquid transport mechanisms in low-dimensional tau phase organic conductors|K. Storr,L. Balicas,J. S. Brooks,D. Graf,G. C. Papavassiliou###
(472719, 472719)
 Contrary to the predicted single, star-shaped,closed orbit Fermi surface from band structure calculations (with an expectedapproximate area of 12.5% of AFBZ), two fundamental frequencies Fl<missing VAR> and Fh<missing VAR>are detected in the SdH signal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 12, 'K', 2],[68.0, 15, 'T', 1],[18.0, 12.5, '%', 0],[31.0, 2.4, '%', 1],[36.0, 6.8, '%', 1],[125.0, 2, 'D', 2],[263.0, 2, 'D', 4],[319.0, 2, 'D', 5]

F
###Magnetic field-dependent interplay between incoherent and Fermi liquid transport mechanisms in low-dimensional tau phase organic conductors|K. Storr,L. Balicas,J. S. Brooks,D. Graf,G. C. Papavassiliou###
(472724, 472724)
 Contrary to the predicted single, star-shaped,closed orbit Fermi surface from band structure calculations (with an expectedapproximate area of 12.5% of AFBZ), two fundamental frequencies Fl<missing VAR> and Fh<missing VAR>are detected in the SdH signal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 12, 'K', 2],[73.0, 15, 'T', 1],[23.0, 12.5, '%', 0],[26.0, 2.4, '%', 1],[31.0, 6.8, '%', 1],[120.0, 2, 'D', 2],[258.0, 2, 'D', 4],[314.0, 2, 'D', 5]

H
###Magnetic field-dependent interplay between incoherent and Fermi liquid transport mechanisms in low-dimensional tau phase organic conductors|K. Storr,L. Balicas,J. S. Brooks,D. Graf,G. C. Papavassiliou###
(472737, 472737)
 Contrary to the predicted single, star-shaped,closed orbit Fermi surface from band structure calculations (with an expectedapproximate area of 12.5% of AFBZ), two fundamental frequencies Fl<missing VAR> and Fh<missing VAR>are detected in the SdH signal.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 12, 'K', 2],[86.0, 15, 'T', 1],[36.0, 12.5, '%', 0],[13.0, 2.4, '%', 1],[18.0, 6.8, '%', 1],[107.0, 2, 'D', 2],[245.0, 2, 'D', 4],[301.0, 2, 'D', 5]

FB
###Magnetic field-dependent interplay between incoherent and Fermi liquid transport mechanisms in low-dimensional tau phase organic conductors|K. Storr,L. Balicas,J. S. Brooks,D. Graf,G. C. Papavassiliou###
(472776, 472777)
 These orbits correspond to 2.4% and 6.8% of thearea of the first Brillouin zone(AFBZ), with effective masses Fl<missing VAR>  4.0 /-0.5 and Fh<missing VAR>  7.3 /- 0.1.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[206.0, 12, 'K', 3],[125.0, 15, 'T', 2],[75.0, 12.5, '%', 1],[26.0, 2.4, '%', 0],[21.0, 6.8, '%', 0],[67.0, 2, 'D', 1],[205.0, 2, 'D', 3],[261.0, 2, 'D', 4]

F
###Magnetic field-dependent interplay between incoherent and Fermi liquid transport mechanisms in low-dimensional tau phase organic conductors|K. Storr,L. Balicas,J. S. Brooks,D. Graf,G. C. Papavassiliou###
(472788, 472788)
 These orbits correspond to 2.4% and 6.8% of thearea of the first Brillouin zone(AFBZ), with effective masses Fl<missing VAR>  4.0 /-0.5 and Fh<missing VAR>  7.3 /- 0.1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[218.0, 12, 'K', 3],[137.0, 15, 'T', 2],[87.0, 12.5, '%', 1],[38.0, 2.4, '%', 0],[33.0, 6.8, '%', 0],[56.0, 2, 'D', 1],[194.0, 2, 'D', 3],[250.0, 2, 'D', 4]

F
###Magnetic field-dependent interplay between incoherent and Fermi liquid transport mechanisms in low-dimensional tau phase organic conductors|K. Storr,L. Balicas,J. S. Brooks,D. Graf,G. C. Papavassiliou###
(472802, 472802)
 These orbits correspond to 2.4% and 6.8% of thearea of the first Brillouin zone(AFBZ), with effective masses Fl<missing VAR>  4.0 /-0.5 and Fh<missing VAR>  7.3 /- 0.1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[232.0, 12, 'K', 3],[151.0, 15, 'T', 2],[101.0, 12.5, '%', 1],[52.0, 2.4, '%', 0],[47.0, 6.8, '%', 0],[42.0, 2, 'D', 1],[180.0, 2, 'D', 3],[236.0, 2, 'D', 4]

F
###Magnetic field-dependent interplay between incoherent and Fermi liquid transport mechanisms in low-dimensional tau phase organic conductors|K. Storr,L. Balicas,J. S. Brooks,D. Graf,G. C. Papavassiliou###
(472832, 472832)
 The angular dependence, in tilted magnetic fields ofFl<missing VAR> and Fh<missing VAR>, reveals the 2D character of the FS and Angular dependentmagnetoresistance (AMRO) further suggests a FS which is strictly 2-D<missing VAR> where theinter-plane hopping tc is virtually absent or incoherent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[262.0, 12, 'K', 4],[181.0, 15, 'T', 3],[131.0, 12.5, '%', 2],[82.0, 2.4, '%', 1],[77.0, 6.8, '%', 1],[12.0, 2, 'D', 0],[150.0, 2, 'D', 2],[206.0, 2, 'D', 3]

F
###Magnetic field-dependent interplay between incoherent and Fermi liquid transport mechanisms in low-dimensional tau phase organic conductors|K. Storr,L. Balicas,J. S. Brooks,D. Graf,G. C. Papavassiliou###
(472837, 472837)
 The angular dependence, in tilted magnetic fields ofFl<missing VAR> and Fh<missing VAR>, reveals the 2D character of the FS and Angular dependentmagnetoresistance (AMRO) further suggests a FS which is strictly 2-D<missing VAR> where theinter-plane hopping tc is virtually absent or incoherent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[267.0, 12, 'K', 4],[186.0, 15, 'T', 3],[136.0, 12.5, '%', 2],[87.0, 2.4, '%', 1],[82.0, 6.8, '%', 1],[7.0, 2, 'D', 0],[145.0, 2, 'D', 2],[201.0, 2, 'D', 3]

FS
###Magnetic field-dependent interplay between incoherent and Fermi liquid transport mechanisms in low-dimensional tau phase organic conductors|K. Storr,L. Balicas,J. S. Brooks,D. Graf,G. C. Papavassiliou###
(472852, 472853)
 The angular dependence, in tilted magnetic fields ofFl<missing VAR> and Fh<missing VAR>, reveals the 2D character of the FS and Angular dependentmagnetoresistance (AMRO) further suggests a FS which is strictly 2-D<missing VAR> where theinter-plane hopping tc is virtually absent or incoherent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[282.0, 12, 'K', 4],[201.0, 15, 'T', 3],[151.0, 12.5, '%', 2],[102.0, 2.4, '%', 1],[97.0, 6.8, '%', 1],[8.0, 2, 'D', 0],[129.0, 2, 'D', 2],[185.0, 2, 'D', 3]

O
###Magnetic field-dependent interplay between incoherent and Fermi liquid transport mechanisms in low-dimensional tau phase organic conductors|K. Storr,L. Balicas,J. S. Brooks,D. Graf,G. C. Papavassiliou###
(472868, 472868)
 The angular dependence, in tilted magnetic fields ofFl<missing VAR> and Fh<missing VAR>, reveals the 2D character of the FS and Angular dependentmagnetoresistance (AMRO) further suggests a FS which is strictly 2-D<missing VAR> where theinter-plane hopping tc is virtually absent or incoherent.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[298.0, 12, 'K', 4],[217.0, 15, 'T', 3],[167.0, 12.5, '%', 2],[118.0, 2.4, '%', 1],[113.0, 6.8, '%', 1],[24.0, 2, 'D', 0],[114.0, 2, 'D', 2],[170.0, 2, 'D', 3]

FS
###Magnetic field-dependent interplay between incoherent and Fermi liquid transport mechanisms in low-dimensional tau phase organic conductors|K. Storr,L. Balicas,J. S. Brooks,D. Graf,G. C. Papavassiliou###
(472877, 472878)
 The angular dependence, in tilted magnetic fields ofFl<missing VAR> and Fh<missing VAR>, reveals the 2D character of the FS and Angular dependentmagnetoresistance (AMRO) further suggests a FS which is strictly 2-D<missing VAR> where theinter-plane hopping tc is virtually absent or incoherent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[307.0, 12, 'K', 4],[226.0, 15, 'T', 3],[176.0, 12.5, '%', 2],[127.0, 2.4, '%', 1],[122.0, 6.8, '%', 1],[33.0, 2, 'D', 0],[104.0, 2, 'D', 2],[160.0, 2, 'D', 3]

O
###Magnetic field-dependent interplay between incoherent and Fermi liquid transport mechanisms in low-dimensional tau phase organic conductors|K. Storr,L. Balicas,J. S. Brooks,D. Graf,G. C. Papavassiliou###
(473073, 473073)
 The magnetic fieldnot only reduces the inelastic scattering between the 2D metallic layers, butit also reveals the incoherent nature of interplane transport in the AMROspectrum.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[503.0, 12, 'K', 7],[422.0, 15, 'T', 6],[372.0, 12.5, '%', 5],[323.0, 2.4, '%', 4],[318.0, 6.8, '%', 4],[229.0, 2, 'D', 3],[91.0, 2, 'D', 1],[35.0, 2, 'D', 0]

S
###Evidence and Characterization of a SDW Transition in Na0.75CoO2 Single Crystals|B. C. Sales,R. Jin,K. A. Affholter,P. Khalifah,G. M. Veith,D. Mandrus###
(473121, 473121)
Evidence and Characterization of a SD<missing VAR>W Transition in Na0.75CoO2 Single Crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 22, 'K', 2],[148.0, 22, 'K', 3],[198.0, 0.5, 'T', 4],[259.0, 0.45, 'J', 5],[272.0, 50, '%', 5],[383.0, 100, '%', 7],[387.0, 2, 'K', 7],[397.0, 8, 'Tesla', 7],[621.0, 340, 'K', 12],[649.0, 250, 'to', 12]

W
###Evidence and Characterization of a SDW Transition in Na0.75CoO2 Single Crystals|B. C. Sales,R. Jin,K. A. Affholter,P. Khalifah,G. M. Veith,D. Mandrus###
(473123, 473123)
Evidence and Characterization of a SD<missing VAR>W Transition in Na0.75CoO2 Single Crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 22, 'K', 2],[146.0, 22, 'K', 3],[196.0, 0.5, 'T', 4],[257.0, 0.45, 'J', 5],[270.0, 50, '%', 5],[381.0, 100, '%', 7],[385.0, 2, 'K', 7],[395.0, 8, 'Tesla', 7],[619.0, 340, 'K', 12],[647.0, 250, 'to', 12]

Na0.75CoO2
###Evidence and Characterization of a SDW Transition in Na0.75CoO2 Single Crystals|B. C. Sales,R. Jin,K. A. Affholter,P. Khalifah,G. M. Veith,D. Mandrus###
(473129, 473133)
Evidence and Characterization of a SD<missing VAR>W Transition in Na0.75CoO2 Single Crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5333333333333333,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.26666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 22, 'K', 2],[136.0, 22, 'K', 3],[186.0, 0.5, 'T', 4],[247.0, 0.45, 'J', 5],[260.0, 50, '%', 5],[371.0, 100, '%', 7],[375.0, 2, 'K', 7],[385.0, 8, 'Tesla', 7],[609.0, 340, 'K', 12],[637.0, 250, 'to', 12]

Na0.75CoO2
###Evidence and Characterization of a SDW Transition in Na0.75CoO2 Single Crystals|B. C. Sales,R. Jin,K. A. Affholter,P. Khalifah,G. M. Veith,D. Mandrus###
(473155, 473159)
 The magnetic, thermal and transport properties of Na0.75CoO2 single crystalsgrown by the floating zone (FZ) method are reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5333333333333333,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.26666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 22, 'K', 1],[110.0, 22, 'K', 2],[160.0, 0.5, 'T', 3],[221.0, 0.45, 'J', 4],[234.0, 50, '%', 4],[345.0, 100, '%', 6],[349.0, 2, 'K', 6],[359.0, 8, 'Tesla', 6],[583.0, 340, 'K', 11],[611.0, 250, 'to', 11]

F
###Evidence and Characterization of a SDW Transition in Na0.75CoO2 Single Crystals|B. C. Sales,R. Jin,K. A. Affholter,P. Khalifah,G. M. Veith,D. Mandrus###
(473177, 473177)
 The magnetic, thermal and transport properties of Na0.75CoO2 single crystalsgrown by the floating zone (FZ) method are reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 22, 'K', 1],[92.0, 22, 'K', 2],[142.0, 0.5, 'T', 3],[203.0, 0.45, 'J', 4],[216.0, 50, '%', 4],[327.0, 100, '%', 6],[331.0, 2, 'K', 6],[341.0, 8, 'Tesla', 6],[565.0, 340, 'K', 11],[593.0, 250, 'to', 11]

S
###Evidence and Characterization of a SDW Transition in Na0.75CoO2 Single Crystals|B. C. Sales,R. Jin,K. A. Affholter,P. Khalifah,G. M. Veith,D. Mandrus###
(473263, 473263)
 These data are most consistentwith the formation of an antiferromagnet spin-density-wave (SD<missing VAR>W) at 22 K withthe easy axis for magnetization nearly along the c<missing VAR> axis.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 22, 'K', 1],[6.0, 22, 'K', 0],[56.0, 0.5, 'T', 1],[117.0, 0.45, 'J', 2],[130.0, 50, '%', 2],[241.0, 100, '%', 4],[245.0, 2, 'K', 4],[255.0, 8, 'Tesla', 4],[479.0, 340, 'K', 9],[507.0, 250, 'to', 9]

W
###Evidence and Characterization of a SDW Transition in Na0.75CoO2 Single Crystals|B. C. Sales,R. Jin,K. A. Affholter,P. Khalifah,G. M. Veith,D. Mandrus###
(473265, 473265)
 These data are most consistentwith the formation of an antiferromagnet spin-density-wave (SD<missing VAR>W) at 22 K withthe easy axis for magnetization nearly along the c<missing VAR> axis.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 22, 'K', 1],[4.0, 22, 'K', 0],[54.0, 0.5, 'T', 1],[115.0, 0.45, 'J', 2],[128.0, 50, '%', 2],[239.0, 100, '%', 4],[243.0, 2, 'K', 4],[253.0, 8, 'Tesla', 4],[477.0, 340, 'K', 9],[505.0, 250, 'to', 9]

S
###Evidence and Characterization of a SDW Transition in Na0.75CoO2 Single Crystals|B. C. Sales,R. Jin,K. A. Affholter,P. Khalifah,G. M. Veith,D. Mandrus###
(473337, 473337)
 Weak and softferromagnetism is observed for applied magnetic fields less than 0.5 T, whichsuggests a slight canting of the SD<missing VAR>W magnetization with respect to the c<missing VAR> axis.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 22, 'K', 2],[68.0, 22, 'K', 1],[18.0, 0.5, 'T', 0],[43.0, 0.45, 'J', 1],[56.0, 50, '%', 1],[167.0, 100, '%', 3],[171.0, 2, 'K', 3],[181.0, 8, 'Tesla', 3],[405.0, 340, 'K', 8],[433.0, 250, 'to', 8]

W
###Evidence and Characterization of a SDW Transition in Na0.75CoO2 Single Crystals|B. C. Sales,R. Jin,K. A. Affholter,P. Khalifah,G. M. Veith,D. Mandrus###
(473339, 473339)
 Weak and softferromagnetism is observed for applied magnetic fields less than 0.5 T, whichsuggests a slight canting of the SD<missing VAR>W magnetization with respect to the c<missing VAR> axis.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 22, 'K', 2],[70.0, 22, 'K', 1],[20.0, 0.5, 'T', 0],[41.0, 0.45, 'J', 1],[54.0, 50, '%', 1],[165.0, 100, '%', 3],[169.0, 2, 'K', 3],[179.0, 8, 'Tesla', 3],[403.0, 340, 'K', 8],[431.0, 250, 'to', 8]

S
###Evidence and Characterization of a SDW Transition in Na0.75CoO2 Single Crystals|B. C. Sales,R. Jin,K. A. Affholter,P. Khalifah,G. M. Veith,D. Mandrus###
(473373, 473373)
The jump in the heat capacity at the SD<missing VAR>W transition is 0.45 J/K-mole-Co orabout 50% of the value expected from mean-field weak-coupling theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 22, 'K', 3],[104.0, 22, 'K', 2],[54.0, 0.5, 'T', 1],[7.0, 0.45, 'J', 0],[20.0, 50, '%', 0],[131.0, 100, '%', 2],[135.0, 2, 'K', 2],[145.0, 8, 'Tesla', 2],[369.0, 340, 'K', 7],[397.0, 250, 'to', 7]

W
###Evidence and Characterization of a SDW Transition in Na0.75CoO2 Single Crystals|B. C. Sales,R. Jin,K. A. Affholter,P. Khalifah,G. M. Veith,D. Mandrus###
(473375, 473375)
The jump in the heat capacity at the SD<missing VAR>W transition is 0.45 J/K-mole-Co orabout 50% of the value expected from mean-field weak-coupling theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 22, 'K', 3],[106.0, 22, 'K', 2],[56.0, 0.5, 'T', 1],[5.0, 0.45, 'J', 0],[18.0, 50, '%', 0],[129.0, 100, '%', 2],[133.0, 2, 'K', 2],[143.0, 8, 'Tesla', 2],[367.0, 340, 'K', 7],[395.0, 250, 'to', 7]

K
###Evidence and Characterization of a SDW Transition in Na0.75CoO2 Single Crystals|B. C. Sales,R. Jin,K. A. Affholter,P. Khalifah,G. M. Veith,D. Mandrus###
(473382, 473382)
The jump in the heat capacity at the SD<missing VAR>W transition is 0.45 J/K-mole-Co orabout 50% of the value expected from mean-field weak-coupling theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 22, 'K', 3],[113.0, 22, 'K', 2],[63.0, 0.5, 'T', 1],[2.0, 0.45, 'J', 0],[11.0, 50, '%', 0],[122.0, 100, '%', 2],[126.0, 2, 'K', 2],[136.0, 8, 'Tesla', 2],[360.0, 340, 'K', 7],[388.0, 250, 'to', 7]

Co
###Evidence and Characterization of a SDW Transition in Na0.75CoO2 Single Crystals|B. C. Sales,R. Jin,K. A. Affholter,P. Khalifah,G. M. Veith,D. Mandrus###
(473386, 473386)
The jump in the heat capacity at the SD<missing VAR>W transition is 0.45 J/K-mole-Co orabout 50% of the value expected from mean-field weak-coupling theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 22, 'K', 3],[117.0, 22, 'K', 2],[67.0, 0.5, 'T', 1],[6.0, 0.45, 'J', 0],[7.0, 50, '%', 0],[118.0, 100, '%', 2],[122.0, 2, 'K', 2],[132.0, 8, 'Tesla', 2],[356.0, 340, 'K', 7],[384.0, 250, 'to', 7]

S
###Evidence and Characterization of a SDW Transition in Na0.75CoO2 Single Crystals|B. C. Sales,R. Jin,K. A. Affholter,P. Khalifah,G. M. Veith,D. Mandrus###
(473480, 473480)
 The magnetoresistance is small at theSD<missing VAR>W transition but increases in both directions reaching a value of 100% at 2 Kfor applied fields of 8 Tesla.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[250.0, 22, 'K', 5],[211.0, 22, 'K', 4],[161.0, 0.5, 'T', 3],[100.0, 0.45, 'J', 2],[87.0, 50, '%', 2],[24.0, 100, '%', 0],[28.0, 2, 'K', 0],[38.0, 8, 'Tesla', 0],[262.0, 340, 'K', 5],[290.0, 250, 'to', 5]

W
###Evidence and Characterization of a SDW Transition in Na0.75CoO2 Single Crystals|B. C. Sales,R. Jin,K. A. Affholter,P. Khalifah,G. M. Veith,D. Mandrus###
(473482, 473482)
 The magnetoresistance is small at theSD<missing VAR>W transition but increases in both directions reaching a value of 100% at 2 Kfor applied fields of 8 Tesla.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[252.0, 22, 'K', 5],[213.0, 22, 'K', 4],[163.0, 0.5, 'T', 3],[102.0, 0.45, 'J', 2],[89.0, 50, '%', 2],[22.0, 100, '%', 0],[26.0, 2, 'K', 0],[36.0, 8, 'Tesla', 0],[260.0, 340, 'K', 5],[288.0, 250, 'to', 5]

S
###Evidence and Characterization of a SDW Transition in Na0.75CoO2 Single Crystals|B. C. Sales,R. Jin,K. A. Affholter,P. Khalifah,G. M. Veith,D. Mandrus###
(473567, 473567)
 Theobservation of a SD<missing VAR>W transition in this material is found to be sensitive tothe preparation conditions and the degree of order in the Na layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[337.0, 22, 'K', 7],[298.0, 22, 'K', 6],[248.0, 0.5, 'T', 5],[187.0, 0.45, 'J', 4],[174.0, 50, '%', 4],[63.0, 100, '%', 2],[59.0, 2, 'K', 2],[49.0, 8, 'Tesla', 2],[175.0, 340, 'K', 3],[203.0, 250, 'to', 3]

W
###Evidence and Characterization of a SDW Transition in Na0.75CoO2 Single Crystals|B. C. Sales,R. Jin,K. A. Affholter,P. Khalifah,G. M. Veith,D. Mandrus###
(473569, 473569)
 Theobservation of a SD<missing VAR>W transition in this material is found to be sensitive tothe preparation conditions and the degree of order in the Na layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[339.0, 22, 'K', 7],[300.0, 22, 'K', 6],[250.0, 0.5, 'T', 5],[189.0, 0.45, 'J', 4],[176.0, 50, '%', 4],[65.0, 100, '%', 2],[61.0, 2, 'K', 2],[51.0, 8, 'Tesla', 2],[173.0, 340, 'K', 3],[201.0, 250, 'to', 3]

Na
###Evidence and Characterization of a SDW Transition in Na0.75CoO2 Single Crystals|B. C. Sales,R. Jin,K. A. Affholter,P. Khalifah,G. M. Veith,D. Mandrus###
(473612, 473612)
 Theobservation of a SD<missing VAR>W transition in this material is found to be sensitive tothe preparation conditions and the degree of order in the Na layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[382.0, 22, 'K', 7],[343.0, 22, 'K', 6],[293.0, 0.5, 'T', 5],[232.0, 0.45, 'J', 4],[219.0, 50, '%', 4],[108.0, 100, '%', 2],[104.0, 2, 'K', 2],[94.0, 8, 'Tesla', 2],[130.0, 340, 'K', 3],[158.0, 250, 'to', 3]

No
###Evidence and Characterization of a SDW Transition in Na0.75CoO2 Single Crystals|B. C. Sales,R. Jin,K. A. Affholter,P. Khalifah,G. M. Veith,D. Mandrus###
(473617, 473617)
 No SD<missing VAR>Wtransition is observed in our polycrystalline powder with the same nominalcomposition (Na0.75CoO2) and lattice constants.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0
[387.0, 22, 'K', 8],[348.0, 22, 'K', 7],[298.0, 0.5, 'T', 6],[237.0, 0.45, 'J', 5],[224.0, 50, '%', 5],[113.0, 100, '%', 3],[109.0, 2, 'K', 3],[99.0, 8, 'Tesla', 3],[125.0, 340, 'K', 2],[153.0, 250, 'to', 2]

S
###Evidence and Characterization of a SDW Transition in Na0.75CoO2 Single Crystals|B. C. Sales,R. Jin,K. A. Affholter,P. Khalifah,G. M. Veith,D. Mandrus###
(473619, 473619)
 No SD<missing VAR>Wtransition is observed in our polycrystalline powder with the same nominalcomposition (Na0.75CoO2) and lattice constants.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[389.0, 22, 'K', 8],[350.0, 22, 'K', 7],[300.0, 0.5, 'T', 6],[239.0, 0.45, 'J', 5],[226.0, 50, '%', 5],[115.0, 100, '%', 3],[111.0, 2, 'K', 3],[101.0, 8, 'Tesla', 3],[123.0, 340, 'K', 2],[151.0, 250, 'to', 2]

W
###Evidence and Characterization of a SDW Transition in Na0.75CoO2 Single Crystals|B. C. Sales,R. Jin,K. A. Affholter,P. Khalifah,G. M. Veith,D. Mandrus###
(473621, 473621)
 No SD<missing VAR>Wtransition is observed in our polycrystalline powder with the same nominalcomposition (Na0.75CoO2) and lattice constants.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[391.0, 22, 'K', 8],[352.0, 22, 'K', 7],[302.0, 0.5, 'T', 6],[241.0, 0.45, 'J', 5],[228.0, 50, '%', 5],[117.0, 100, '%', 3],[113.0, 2, 'K', 3],[103.0, 8, 'Tesla', 3],[121.0, 340, 'K', 2],[149.0, 250, 'to', 2]

(Na0.75CoO2)
###Evidence and Characterization of a SDW Transition in Na0.75CoO2 Single Crystals|B. C. Sales,R. Jin,K. A. Affholter,P. Khalifah,G. M. Veith,D. Mandrus###
(473649, 473655)
 No SD<missing VAR>Wtransition is observed in our polycrystalline powder with the same nominalcomposition (Na0.75CoO2) and lattice constants.
Featurization successful!
0,0,0,0,0,0,0,0.5333333333333333,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.26666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[419.0, 22, 'K', 8],[380.0, 22, 'K', 7],[330.0, 0.5, 'T', 6],[269.0, 0.45, 'J', 5],[256.0, 50, '%', 5],[145.0, 100, '%', 3],[141.0, 2, 'K', 3],[131.0, 8, 'Tesla', 3],[87.0, 340, 'K', 2],[115.0, 250, 'to', 2]

Na
###Evidence and Characterization of a SDW Transition in Na0.75CoO2 Single Crystals|B. C. Sales,R. Jin,K. A. Affholter,P. Khalifah,G. M. Veith,D. Mandrus###
(473711, 473711)
 Differential scanningcalorimetry data, however, show distinct differences between the powder andcrystal, suggesting a higher degree of order in the Na layers within thecrystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[481.0, 22, 'K', 9],[442.0, 22, 'K', 8],[392.0, 0.5, 'T', 7],[331.0, 0.45, 'J', 6],[318.0, 50, '%', 6],[207.0, 100, '%', 4],[203.0, 2, 'K', 4],[193.0, 8, 'Tesla', 4],[31.0, 340, 'K', 1],[59.0, 250, 'to', 1]

K
###Evidence and Characterization of a SDW Transition in Na0.75CoO2 Single Crystals|B. C. Sales,R. Jin,K. A. Affholter,P. Khalifah,G. M. Veith,D. Mandrus###
(473775, 473775)
 The crystal exhibits a sharp phase transition at T<missing VAR>2  340 K while forthe powder this transition is smeared over the temperature range from 250 to310 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[545.0, 22, 'K', 10],[506.0, 22, 'K', 9],[456.0, 0.5, 'T', 8],[395.0, 0.45, 'J', 7],[382.0, 50, '%', 7],[271.0, 100, '%', 5],[267.0, 2, 'K', 5],[257.0, 8, 'Tesla', 5],[33.0, 340, 'K', 0],[5.0, 250, 'to', 0]

CoFe
###Magnetoresistance and collective Coulomb blockade in super-lattices of ferromagnetic CoFe nanoparticles|R. P. Tan,J. Carrey,C. Desvaux,L. -M. Lacroix,P. Renaud,B. Chaudret,M. Respaud###
(473806, 473807)
Magnetoresistance and collective Coulomb blockade in super-lattices of ferromagnetic CoFe nanoparticles.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 13, 'to', 3],[76.0, 256, 'K', 3],[114.0, 3.5, 'to', 4],[156.0, 1.8, 'and', 6],[157.0, 10, 'K', 6],[298.0, 1, '%', 9],[387.0, 30.0, 'The', 11],[570.0, 64, ',', 18]

CoFe
###Magnetoresistance and collective Coulomb blockade in super-lattices of ferromagnetic CoFe nanoparticles|R. P. Tan,J. Carrey,C. Desvaux,L. -M. Lacroix,P. Renaud,B. Chaudret,M. Respaud###
(473832, 473833)
 We report on transport properties of millimetric super-lattices of CoFenanoparticles surrounded by organic ligands.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 13, 'to', 2],[50.0, 256, 'K', 2],[88.0, 3.5, 'to', 3],[130.0, 1.8, 'and', 5],[131.0, 10, 'K', 5],[272.0, 1, '%', 8],[361.0, 30.0, 'The', 10],[544.0, 64, ',', 17]

At
###Magnetoresistance and collective Coulomb blockade in super-lattices of ferromagnetic CoFe nanoparticles|R. P. Tan,J. Carrey,C. Desvaux,L. -M. Lacroix,P. Renaud,B. Chaudret,M. Respaud###
(473886, 473886)
 At low temperature I(V)s<missing VAR>follow IK[(V-VT)/VT]ksi with ksi ranging 3.5 to 5.2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 13, 'to', 1],[3.0, 256, 'K', 1],[35.0, 3.5, 'to', 0],[77.0, 1.8, 'and', 2],[78.0, 10, 'K', 2],[219.0, 1, '%', 5],[308.0, 30.0, 'The', 7],[491.0, 64, ',', 14]

I(V)
###Magnetoresistance and collective Coulomb blockade in super-lattices of ferromagnetic CoFe nanoparticles|R. P. Tan,J. Carrey,C. Desvaux,L. -M. Lacroix,P. Renaud,B. Chaudret,M. Respaud###
(473892, 473895)
 At low temperature I(V)s<missing VAR>follow IK[(V-VT)/VT]ksi with ksi ranging 3.5 to 5.2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 13, 'to', 1],[9.0, 256, 'K', 1],[26.0, 3.5, 'to', 0],[68.0, 1.8, 'and', 2],[69.0, 10, 'K', 2],[210.0, 1, '%', 5],[299.0, 30.0, 'The', 7],[482.0, 64, ',', 14]

K
###Magnetoresistance and collective Coulomb blockade in super-lattices of ferromagnetic CoFe nanoparticles|R. P. Tan,J. Carrey,C. Desvaux,L. -M. Lacroix,P. Renaud,B. Chaudret,M. Respaud###
(473902, 473902)
 At low temperature I(V)s<missing VAR>follow IK[(V-VT)/VT]ksi with ksi ranging 3.5 to 5.2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 13, 'to', 1],[19.0, 256, 'K', 1],[19.0, 3.5, 'to', 0],[61.0, 1.8, 'and', 2],[62.0, 10, 'K', 2],[203.0, 1, '%', 5],[292.0, 30.0, 'The', 7],[475.0, 64, ',', 14]

V
###Magnetoresistance and collective Coulomb blockade in super-lattices of ferromagnetic CoFe nanoparticles|R. P. Tan,J. Carrey,C. Desvaux,L. -M. Lacroix,P. Renaud,B. Chaudret,M. Respaud###
(473905, 473905)
 At low temperature I(V)s<missing VAR>follow IK[(V-VT)/VT]ksi with ksi ranging 3.5 to 5.2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 13, 'to', 1],[22.0, 256, 'K', 1],[16.0, 3.5, 'to', 0],[58.0, 1.8, 'and', 2],[59.0, 10, 'K', 2],[200.0, 1, '%', 5],[289.0, 30.0, 'The', 7],[472.0, 64, ',', 14]

V
###Magnetoresistance and collective Coulomb blockade in super-lattices of ferromagnetic CoFe nanoparticles|R. P. Tan,J. Carrey,C. Desvaux,L. -M. Lacroix,P. Renaud,B. Chaudret,M. Respaud###
(473907, 473907)
 At low temperature I(V)s<missing VAR>follow IK[(V-VT)/VT]ksi with ksi ranging 3.5 to 5.2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 13, 'to', 1],[24.0, 256, 'K', 1],[14.0, 3.5, 'to', 0],[56.0, 1.8, 'and', 2],[57.0, 10, 'K', 2],[198.0, 1, '%', 5],[287.0, 30.0, 'The', 7],[470.0, 64, ',', 14]

V
###Magnetoresistance and collective Coulomb blockade in super-lattices of ferromagnetic CoFe nanoparticles|R. P. Tan,J. Carrey,C. Desvaux,L. -M. Lacroix,P. Renaud,B. Chaudret,M. Respaud###
(473911, 473911)
 At low temperature I(V)s<missing VAR>follow IK[(V-VT)/VT]ksi with ksi ranging 3.5 to 5.2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 13, 'to', 1],[28.0, 256, 'K', 1],[10.0, 3.5, 'to', 0],[52.0, 1.8, 'and', 2],[53.0, 10, 'K', 2],[194.0, 1, '%', 5],[283.0, 30.0, 'The', 7],[466.0, 64, ',', 14]

I(V)
###Magnetoresistance and collective Coulomb blockade in super-lattices of ferromagnetic CoFe nanoparticles|R. P. Tan,J. Carrey,C. Desvaux,L. -M. Lacroix,P. Renaud,B. Chaudret,M. Respaud###
(473926, 473929)
 I(V) superpose on auniversal curve when shifted by a voltage proportional to the temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 13, 'to', 2],[43.0, 256, 'K', 2],[5.0, 3.5, 'to', 1],[34.0, 1.8, 'and', 1],[35.0, 10, 'K', 1],[176.0, 1, '%', 4],[265.0, 30.0, 'The', 6],[448.0, 64, ',', 13]

K
###Magnetoresistance and collective Coulomb blockade in super-lattices of ferromagnetic CoFe nanoparticles|R. P. Tan,J. Carrey,C. Desvaux,L. -M. Lacroix,P. Renaud,B. Chaudret,M. Respaud###
(474061, 474061)
 Below1.8 K, this high-field magnetoresistance abruptly disappears and inversetunnelling magnetoresistance is observed, the amplitude of which does notexceed 1%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 13, 'to', 6],[178.0, 256, 'K', 6],[140.0, 3.5, 'to', 5],[98.0, 1.8, 'and', 3],[97.0, 10, 'K', 3],[44.0, 1, '%', 0],[133.0, 30.0, 'The', 2],[316.0, 64, ',', 9]

At
###Magnetoresistance and collective Coulomb blockade in super-lattices of ferromagnetic CoFe nanoparticles|R. P. Tan,J. Carrey,C. Desvaux,L. -M. Lacroix,P. Renaud,B. Chaudret,M. Respaud###
(474109, 474109)
 At this low temperature, some samples display in their I(V)characteristics abrupt and hysteretic transitions between the Coulomb blockaderegime and the conductive regime.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[227.0, 13, 'to', 7],[226.0, 256, 'K', 7],[188.0, 3.5, 'to', 6],[146.0, 1.8, 'and', 4],[145.0, 10, 'K', 4],[4.0, 1, '%', 1],[85.0, 30.0, 'The', 1],[268.0, 64, ',', 8]

I(V)
###Magnetoresistance and collective Coulomb blockade in super-lattices of ferromagnetic CoFe nanoparticles|R. P. Tan,J. Carrey,C. Desvaux,L. -M. Lacroix,P. Renaud,B. Chaudret,M. Respaud###
(474128, 474131)
 At this low temperature, some samples display in their I(V)characteristics abrupt and hysteretic transitions between the Coulomb blockaderegime and the conductive regime.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[246.0, 13, 'to', 7],[245.0, 256, 'K', 7],[207.0, 3.5, 'to', 6],[165.0, 1.8, 'and', 4],[164.0, 10, 'K', 4],[23.0, 1, '%', 1],[63.0, 30.0, 'The', 1],[246.0, 64, ',', 8]

B
###Magnetoresistance and collective Coulomb blockade in super-lattices of ferromagnetic CoFe nanoparticles|R. P. Tan,J. Carrey,C. Desvaux,L. -M. Lacroix,P. Renaud,B. Chaudret,M. Respaud###
(474375, 474375)
 B 64,041302 (R), 2001] or could also be interpreted as a true phase transitionbetween a Coulomb glass phase to a liquid phase of electrons.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[493.0, 13, 'to', 15],[492.0, 256, 'K', 15],[454.0, 3.5, 'to', 14],[412.0, 1.8, 'and', 12],[411.0, 10, 'K', 12],[270.0, 1, '%', 9],[181.0, 30.0, 'The', 7],[2.0, 64, ',', 0]

(Nd0.4Gd0.3)Sr0.3MnO3
###Evidence of electronic phase arrest and glassy ferromagnetic behaviour in (Nd0.4Gd0.3)Sr0.3MnO3 manganite : Comparative study between bulk and nanometric samples|S. Kundu,T. K. Nath###
(474463, 474473)
Evidence of electronic phase arrest and glassy ferromagnetic behaviour in (Nd0.4Gd0.3)Sr0.3MnO3 manganite  Comparative study between bulk and nanometric samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 60, 'nm', 3]

Gd
###Evidence of electronic phase arrest and glassy ferromagnetic behaviour in (Nd0.4Gd0.3)Sr0.3MnO3 manganite : Comparative study between bulk and nanometric samples|S. Kundu,T. K. Nath###
(474507, 474507)
 The effect of doping of rare earth Gd 3 ion replacing Nd 3 inNd0.7Sr0.3MnO3 is investigated in details.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 60, 'nm', 2]

Nd
###Evidence of electronic phase arrest and glassy ferromagnetic behaviour in (Nd0.4Gd0.3)Sr0.3MnO3 manganite : Comparative study between bulk and nanometric samples|S. Kundu,T. K. Nath###
(474515, 474515)
 The effect of doping of rare earth Gd 3 ion replacing Nd 3 inNd0.7Sr0.3MnO3 is investigated in details.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 60, 'nm', 2]

Nd0.7Sr0.3MnO3
###Evidence of electronic phase arrest and glassy ferromagnetic behaviour in (Nd0.4Gd0.3)Sr0.3MnO3 manganite : Comparative study between bulk and nanometric samples|S. Kundu,T. K. Nath###
(474522, 474528)
 The effect of doping of rare earth Gd 3 ion replacing Nd 3 inNd0.7Sr0.3MnO3 is investigated in details.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 60, 'nm', 2]

Nd0.7-x
###Evidence of electronic phase arrest and glassy ferromagnetic behaviour in (Nd0.4Gd0.3)Sr0.3MnO3 manganite : Comparative study between bulk and nanometric samples|S. Kundu,T. K. Nath###
(474575, 474578)
 Measurements of resistivity,magnetoresistance, magnetization, linear and non linear ac magneticsusceptibility on chemically synthesized (Nd0.7-xGdx)Sr0.3MnO3 shows variousinteresting features with doping level x<missing VAR>0.3.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[60.0, 60, 'nm', 1]

Sr0.3MnO3
###Evidence of electronic phase arrest and glassy ferromagnetic behaviour in (Nd0.4Gd0.3)Sr0.3MnO3 manganite : Comparative study between bulk and nanometric samples|S. Kundu,T. K. Nath###
(474581, 474585)
 Measurements of resistivity,magnetoresistance, magnetization, linear and non linear ac magneticsusceptibility on chemically synthesized (Nd0.7-xGdx)Sr0.3MnO3 shows variousinteresting features with doping level x<missing VAR>0.3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6976744186046512,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23255813953488372,0,0,0,0,0,0,0,0,0,0,0,0,0.06976744186046512,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 60, 'nm', 1]

Ho
###Charge transport in Ho$_x$Lu$_{1-x}$B$_{12}$: Separating Positive and Negative Magnetoresistance in Metals with Magnetic Ions|N. E. Sluchanko,A. L. Khoroshilov,M. A. Anisimov,A. N. Azarevich,A. V. Bogach,V. V. Glushkov,S. V. Demishev,V. N. Krasnorussky,V. V. Voronov,N. Yu. Shitsevalova,V. B. Filippov,A. V. Levchenko,G. Pristas,S. Gabani,K. Flachbart###
(475098, 475098)
Charge transport in Hox<missing VAR>Lu1-xB12 Separating Positive and Negative Magnetoresistance in Metals with Magnetic Ions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 80, 'kOe', 1],[665.0, 4, 'f', 7],[679.0, 5, 'd', 7]

Lu1-xB12
###Charge transport in Ho$_x$Lu$_{1-x}$B$_{12}$: Separating Positive and Negative Magnetoresistance in Metals with Magnetic Ions|N. E. Sluchanko,A. L. Khoroshilov,M. A. Anisimov,A. N. Azarevich,A. V. Bogach,V. V. Glushkov,S. V. Demishev,V. N. Krasnorussky,V. V. Voronov,N. Yu. Shitsevalova,V. B. Filippov,A. V. Levchenko,G. Pristas,S. Gabani,K. Flachbart###
(475100, 475105)
Charge transport in Hox<missing VAR>Lu1-xB12 Separating Positive and Negative Magnetoresistance in Metals with Magnetic Ions.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[139.0, 80, 'kOe', 1],[658.0, 4, 'f', 7],[672.0, 5, 'd', 7]

Ho
###Charge transport in Ho$_x$Lu$_{1-x}$B$_{12}$: Separating Positive and Negative Magnetoresistance in Metals with Magnetic Ions|N. E. Sluchanko,A. L. Khoroshilov,M. A. Anisimov,A. N. Azarevich,A. V. Bogach,V. V. Glushkov,S. V. Demishev,V. N. Krasnorussky,V. V. Voronov,N. Yu. Shitsevalova,V. B. Filippov,A. V. Levchenko,G. Pristas,S. Gabani,K. Flachbart###
(475152, 475152)
 The magnetoresistance (MR) Delta rho/rho of cage-glass compoundHox<missing VAR>Lu1-xB12 with various concentration of magnetic holmium ions(x<missing VAR>leq0.5) has been studied in detail concurrently with magnetization M(T)and Hall effect investigations on high quality single crystals at temperatures1.9-120 K and in magnetic field up to 80 kOe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 80, 'kOe', 0],[611.0, 4, 'f', 6],[625.0, 5, 'd', 6]

Lu1-xB12
###Charge transport in Ho$_x$Lu$_{1-x}$B$_{12}$: Separating Positive and Negative Magnetoresistance in Metals with Magnetic Ions|N. E. Sluchanko,A. L. Khoroshilov,M. A. Anisimov,A. N. Azarevich,A. V. Bogach,V. V. Glushkov,S. V. Demishev,V. N. Krasnorussky,V. V. Voronov,N. Yu. Shitsevalova,V. B. Filippov,A. V. Levchenko,G. Pristas,S. Gabani,K. Flachbart###
(475154, 475159)
 The magnetoresistance (MR) Delta rho/rho of cage-glass compoundHox<missing VAR>Lu1-xB12 with various concentration of magnetic holmium ions(x<missing VAR>leq0.5) has been studied in detail concurrently with magnetization M(T)and Hall effect investigations on high quality single crystals at temperatures1.9-120 K and in magnetic field up to 80 kOe.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[85.0, 80, 'kOe', 0],[604.0, 4, 'f', 6],[618.0, 5, 'd', 6]

K
###Charge transport in Ho$_x$Lu$_{1-x}$B$_{12}$: Separating Positive and Negative Magnetoresistance in Metals with Magnetic Ions|N. E. Sluchanko,A. L. Khoroshilov,M. A. Anisimov,A. N. Azarevich,A. V. Bogach,V. V. Glushkov,S. V. Demishev,V. N. Krasnorussky,V. V. Voronov,N. Yu. Shitsevalova,V. B. Filippov,A. V. Levchenko,G. Pristas,S. Gabani,K. Flachbart###
(475231, 475231)
 The magnetoresistance (MR) Delta rho/rho of cage-glass compoundHox<missing VAR>Lu1-xB12 with various concentration of magnetic holmium ions(x<missing VAR>leq0.5) has been studied in detail concurrently with magnetization M(T)and Hall effect investigations on high quality single crystals at temperatures1.9-120 K and in magnetic field up to 80 kOe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 80, 'kOe', 0],[532.0, 4, 'f', 6],[546.0, 5, 'd', 6]

Ho3
###Charge transport in Ho$_x$Lu$_{1-x}$B$_{12}$: Separating Positive and Negative Magnetoresistance in Metals with Magnetic Ions|N. E. Sluchanko,A. L. Khoroshilov,M. A. Anisimov,A. N. Azarevich,A. V. Bogach,V. V. Glushkov,S. V. Demishev,V. N. Krasnorussky,V. V. Voronov,N. Yu. Shitsevalova,V. B. Filippov,A. V. Levchenko,G. Pristas,S. Gabani,K. Flachbart###
(475321, 475322)
 The undertaken analysis ofDeltarho/rho allows us to conclude that the large negativemagnetoresistance (nMR) observed in vicinity of Neel temperature is caused byscattering of charge carriers on magnetic clusters of Ho3 ions, and thatthese nanosize regions with AF exchange inside may be considered as short rangeorder AF domains.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 80, 'kOe', 1],[441.0, 4, 'f', 5],[455.0, 5, 'd', 5]

F
###Charge transport in Ho$_x$Lu$_{1-x}$B$_{12}$: Separating Positive and Negative Magnetoresistance in Metals with Magnetic Ions|N. E. Sluchanko,A. L. Khoroshilov,M. A. Anisimov,A. N. Azarevich,A. V. Bogach,V. V. Glushkov,S. V. Demishev,V. N. Krasnorussky,V. V. Voronov,N. Yu. Shitsevalova,V. B. Filippov,A. V. Levchenko,G. Pristas,S. Gabani,K. Flachbart###
(475341, 475341)
 The undertaken analysis ofDeltarho/rho allows us to conclude that the large negativemagnetoresistance (nMR) observed in vicinity of Neel temperature is caused byscattering of charge carriers on magnetic clusters of Ho3 ions, and thatthese nanosize regions with AF exchange inside may be considered as short rangeorder AF domains.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 80, 'kOe', 1],[422.0, 4, 'f', 5],[436.0, 5, 'd', 5]

F
###Charge transport in Ho$_x$Lu$_{1-x}$B$_{12}$: Separating Positive and Negative Magnetoresistance in Metals with Magnetic Ions|N. E. Sluchanko,A. L. Khoroshilov,M. A. Anisimov,A. N. Azarevich,A. V. Bogach,V. V. Glushkov,S. V. Demishev,V. N. Krasnorussky,V. V. Voronov,N. Yu. Shitsevalova,V. B. Filippov,A. V. Levchenko,G. Pristas,S. Gabani,K. Flachbart###
(475363, 475363)
 The undertaken analysis ofDeltarho/rho allows us to conclude that the large negativemagnetoresistance (nMR) observed in vicinity of Neel temperature is caused byscattering of charge carriers on magnetic clusters of Ho3 ions, and thatthese nanosize regions with AF exchange inside may be considered as short rangeorder AF domains.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 80, 'kOe', 1],[400.0, 4, 'f', 5],[414.0, 5, 'd', 5]

Ho
###Charge transport in Ho$_x$Lu$_{1-x}$B$_{12}$: Separating Positive and Negative Magnetoresistance in Metals with Magnetic Ions|N. E. Sluchanko,A. L. Khoroshilov,M. A. Anisimov,A. N. Azarevich,A. V. Bogach,V. V. Glushkov,S. V. Demishev,V. N. Krasnorussky,V. V. Voronov,N. Yu. Shitsevalova,V. B. Filippov,A. V. Levchenko,G. Pristas,S. Gabani,K. Flachbart###
(475441, 475441)
 Moreover, a reduction ofHo-ion effective magnetic moments in the range 3-9muB was found to developboth with temperature lowering and under the increase of holmium content.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[197.0, 80, 'kOe', 3],[322.0, 4, 'f', 3],[336.0, 5, 'd', 3]

B
###Charge transport in Ho$_x$Lu$_{1-x}$B$_{12}$: Separating Positive and Negative Magnetoresistance in Metals with Magnetic Ions|N. E. Sluchanko,A. L. Khoroshilov,M. A. Anisimov,A. N. Azarevich,A. V. Bogach,V. V. Glushkov,S. V. Demishev,V. N. Krasnorussky,V. V. Voronov,N. Yu. Shitsevalova,V. B. Filippov,A. V. Levchenko,G. Pristas,S. Gabani,K. Flachbart###
(475461, 475461)
 Moreover, a reduction ofHo-ion effective magnetic moments in the range 3-9muB was found to developboth with temperature lowering and under the increase of holmium content.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[217.0, 80, 'kOe', 3],[302.0, 4, 'f', 3],[316.0, 5, 'd', 3]

H2
###Charge transport in Ho$_x$Lu$_{1-x}$B$_{12}$: Separating Positive and Negative Magnetoresistance in Metals with Magnetic Ions|N. E. Sluchanko,A. L. Khoroshilov,M. A. Anisimov,A. N. Azarevich,A. V. Bogach,V. V. Glushkov,S. V. Demishev,V. N. Krasnorussky,V. V. Voronov,N. Yu. Shitsevalova,V. B. Filippov,A. V. Levchenko,G. Pristas,S. Gabani,K. Flachbart###
(475525, 475526)
 Aphenomenological description of the large positive quadratic contributionDelta rho/rhosimmuD<missing VAR>2 H2 which dominates inHox<missing VAR>Lu1-xB12 in the intermediate temperature range 20-120 K allowsto estimate the drift mobility exponential changes muDsimT-a witha1.3-1.6 depending on Ho concentration.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[281.0, 80, 'kOe', 4],[237.0, 4, 'f', 2],[251.0, 5, 'd', 2]

Ho
###Charge transport in Ho$_x$Lu$_{1-x}$B$_{12}$: Separating Positive and Negative Magnetoresistance in Metals with Magnetic Ions|N. E. Sluchanko,A. L. Khoroshilov,M. A. Anisimov,A. N. Azarevich,A. V. Bogach,V. V. Glushkov,S. V. Demishev,V. N. Krasnorussky,V. V. Voronov,N. Yu. Shitsevalova,V. B. Filippov,A. V. Levchenko,G. Pristas,S. Gabani,K. Flachbart###
(475535, 475535)
 Aphenomenological description of the large positive quadratic contributionDelta rho/rhosimmuD<missing VAR>2 H2 which dominates inHox<missing VAR>Lu1-xB12 in the intermediate temperature range 20-120 K allowsto estimate the drift mobility exponential changes muDsimT-a witha1.3-1.6 depending on Ho concentration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[291.0, 80, 'kOe', 4],[228.0, 4, 'f', 2],[242.0, 5, 'd', 2]

Lu1-xB12
###Charge transport in Ho$_x$Lu$_{1-x}$B$_{12}$: Separating Positive and Negative Magnetoresistance in Metals with Magnetic Ions|N. E. Sluchanko,A. L. Khoroshilov,M. A. Anisimov,A. N. Azarevich,A. V. Bogach,V. V. Glushkov,S. V. Demishev,V. N. Krasnorussky,V. V. Voronov,N. Yu. Shitsevalova,V. B. Filippov,A. V. Levchenko,G. Pristas,S. Gabani,K. Flachbart###
(475537, 475542)
 Aphenomenological description of the large positive quadratic contributionDelta rho/rhosimmuD<missing VAR>2 H2 which dominates inHox<missing VAR>Lu1-xB12 in the intermediate temperature range 20-120 K allowsto estimate the drift mobility exponential changes muDsimT-a witha1.3-1.6 depending on Ho concentration.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[293.0, 80, 'kOe', 4],[221.0, 4, 'f', 2],[235.0, 5, 'd', 2]

K
###Charge transport in Ho$_x$Lu$_{1-x}$B$_{12}$: Separating Positive and Negative Magnetoresistance in Metals with Magnetic Ions|N. E. Sluchanko,A. L. Khoroshilov,M. A. Anisimov,A. N. Azarevich,A. V. Bogach,V. V. Glushkov,S. V. Demishev,V. N. Krasnorussky,V. V. Voronov,N. Yu. Shitsevalova,V. B. Filippov,A. V. Levchenko,G. Pristas,S. Gabani,K. Flachbart###
(475558, 475558)
 Aphenomenological description of the large positive quadratic contributionDelta rho/rhosimmuD<missing VAR>2 H2 which dominates inHox<missing VAR>Lu1-xB12 in the intermediate temperature range 20-120 K allowsto estimate the drift mobility exponential changes muDsimT-a witha1.3-1.6 depending on Ho concentration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[314.0, 80, 'kOe', 4],[205.0, 4, 'f', 2],[219.0, 5, 'd', 2]

Ho
###Charge transport in Ho$_x$Lu$_{1-x}$B$_{12}$: Separating Positive and Negative Magnetoresistance in Metals with Magnetic Ions|N. E. Sluchanko,A. L. Khoroshilov,M. A. Anisimov,A. N. Azarevich,A. V. Bogach,V. V. Glushkov,S. V. Demishev,V. N. Krasnorussky,V. V. Voronov,N. Yu. Shitsevalova,V. B. Filippov,A. V. Levchenko,G. Pristas,S. Gabani,K. Flachbart###
(475596, 475596)
 Aphenomenological description of the large positive quadratic contributionDelta rho/rhosimmuD<missing VAR>2 H2 which dominates inHox<missing VAR>Lu1-xB12 in the intermediate temperature range 20-120 K allowsto estimate the drift mobility exponential changes muDsimT-a witha1.3-1.6 depending on Ho concentration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[352.0, 80, 'kOe', 4],[167.0, 4, 'f', 2],[181.0, 5, 'd', 2]

F
###Charge transport in Ho$_x$Lu$_{1-x}$B$_{12}$: Separating Positive and Negative Magnetoresistance in Metals with Magnetic Ions|N. E. Sluchanko,A. L. Khoroshilov,M. A. Anisimov,A. N. Azarevich,A. V. Bogach,V. V. Glushkov,S. V. Demishev,V. N. Krasnorussky,V. V. Voronov,N. Yu. Shitsevalova,V. B. Filippov,A. V. Levchenko,G. Pristas,S. Gabani,K. Flachbart###
(475627, 475627)
 An even more comprehensive behaviorof magnetoresistance has been found in the AF state of Hox<missing VAR>Lu1-xB12where an additional linear positive component was observed and attributed tocharge carriers scattering on the spin density wave (SD<missing VAR>W).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[383.0, 80, 'kOe', 5],[136.0, 4, 'f', 1],[150.0, 5, 'd', 1]

Ho
###Charge transport in Ho$_x$Lu$_{1-x}$B$_{12}$: Separating Positive and Negative Magnetoresistance in Metals with Magnetic Ions|N. E. Sluchanko,A. L. Khoroshilov,M. A. Anisimov,A. N. Azarevich,A. V. Bogach,V. V. Glushkov,S. V. Demishev,V. N. Krasnorussky,V. V. Voronov,N. Yu. Shitsevalova,V. B. Filippov,A. V. Levchenko,G. Pristas,S. Gabani,K. Flachbart###
(475633, 475633)
 An even more comprehensive behaviorof magnetoresistance has been found in the AF state of Hox<missing VAR>Lu1-xB12where an additional linear positive component was observed and attributed tocharge carriers scattering on the spin density wave (SD<missing VAR>W).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[389.0, 80, 'kOe', 5],[130.0, 4, 'f', 1],[144.0, 5, 'd', 1]

Lu1-xB12
###Charge transport in Ho$_x$Lu$_{1-x}$B$_{12}$: Separating Positive and Negative Magnetoresistance in Metals with Magnetic Ions|N. E. Sluchanko,A. L. Khoroshilov,M. A. Anisimov,A. N. Azarevich,A. V. Bogach,V. V. Glushkov,S. V. Demishev,V. N. Krasnorussky,V. V. Voronov,N. Yu. Shitsevalova,V. B. Filippov,A. V. Levchenko,G. Pristas,S. Gabani,K. Flachbart###
(475635, 475640)
 An even more comprehensive behaviorof magnetoresistance has been found in the AF state of Hox<missing VAR>Lu1-xB12where an additional linear positive component was observed and attributed tocharge carriers scattering on the spin density wave (SD<missing VAR>W).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[391.0, 80, 'kOe', 5],[123.0, 4, 'f', 1],[137.0, 5, 'd', 1]

S
###Charge transport in Ho$_x$Lu$_{1-x}$B$_{12}$: Separating Positive and Negative Magnetoresistance in Metals with Magnetic Ions|N. E. Sluchanko,A. L. Khoroshilov,M. A. Anisimov,A. N. Azarevich,A. V. Bogach,V. V. Glushkov,S. V. Demishev,V. N. Krasnorussky,V. V. Voronov,N. Yu. Shitsevalova,V. B. Filippov,A. V. Levchenko,G. Pristas,S. Gabani,K. Flachbart###
(475683, 475683)
 An even more comprehensive behaviorof magnetoresistance has been found in the AF state of Hox<missing VAR>Lu1-xB12where an additional linear positive component was observed and attributed tocharge carriers scattering on the spin density wave (SD<missing VAR>W).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[439.0, 80, 'kOe', 5],[80.0, 4, 'f', 1],[94.0, 5, 'd', 1]

W
###Charge transport in Ho$_x$Lu$_{1-x}$B$_{12}$: Separating Positive and Negative Magnetoresistance in Metals with Magnetic Ions|N. E. Sluchanko,A. L. Khoroshilov,M. A. Anisimov,A. N. Azarevich,A. V. Bogach,V. V. Glushkov,S. V. Demishev,V. N. Krasnorussky,V. V. Voronov,N. Yu. Shitsevalova,V. B. Filippov,A. V. Levchenko,G. Pristas,S. Gabani,K. Flachbart###
(475685, 475685)
 An even more comprehensive behaviorof magnetoresistance has been found in the AF state of Hox<missing VAR>Lu1-xB12where an additional linear positive component was observed and attributed tocharge carriers scattering on the spin density wave (SD<missing VAR>W).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[441.0, 80, 'kOe', 5],[78.0, 4, 'f', 1],[92.0, 5, 'd', 1]

H
###Charge transport in Ho$_x$Lu$_{1-x}$B$_{12}$: Separating Positive and Negative Magnetoresistance in Metals with Magnetic Ions|N. E. Sluchanko,A. L. Khoroshilov,M. A. Anisimov,A. N. Azarevich,A. V. Bogach,V. V. Glushkov,S. V. Demishev,V. N. Krasnorussky,V. V. Voronov,N. Yu. Shitsevalova,V. B. Filippov,A. V. Levchenko,G. Pristas,S. Gabani,K. Flachbart###
(475704, 475704)
 High precisionmeasurements of Deltarho/rhof<missing VAR>(H,T) have allowed us also to reconstructthe magnetic H-T<missing VAR> phase diagram of Ho0.5Lu0.5B12 and to resolveits magnetic structure as a superposition of 4f (based on localized moments)and 5d (based on SD<missing VAR>W) components.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[460.0, 80, 'kOe', 6],[59.0, 4, 'f', 0],[73.0, 5, 'd', 0]

H
###Charge transport in Ho$_x$Lu$_{1-x}$B$_{12}$: Separating Positive and Negative Magnetoresistance in Metals with Magnetic Ions|N. E. Sluchanko,A. L. Khoroshilov,M. A. Anisimov,A. N. Azarevich,A. V. Bogach,V. V. Glushkov,S. V. Demishev,V. N. Krasnorussky,V. V. Voronov,N. Yu. Shitsevalova,V. B. Filippov,A. V. Levchenko,G. Pristas,S. Gabani,K. Flachbart###
(475726, 475726)
 High precisionmeasurements of Deltarho/rhof<missing VAR>(H,T) have allowed us also to reconstructthe magnetic H-T<missing VAR> phase diagram of Ho0.5Lu0.5B12 and to resolveits magnetic structure as a superposition of 4f (based on localized moments)and 5d (based on SD<missing VAR>W) components.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[482.0, 80, 'kOe', 6],[37.0, 4, 'f', 0],[51.0, 5, 'd', 0]

Ho0.5Lu0.5B12
###Charge transport in Ho$_x$Lu$_{1-x}$B$_{12}$: Separating Positive and Negative Magnetoresistance in Metals with Magnetic Ions|N. E. Sluchanko,A. L. Khoroshilov,M. A. Anisimov,A. N. Azarevich,A. V. Bogach,V. V. Glushkov,S. V. Demishev,V. N. Krasnorussky,V. V. Voronov,N. Yu. Shitsevalova,V. B. Filippov,A. V. Levchenko,G. Pristas,S. Gabani,K. Flachbart###
(475736, 475741)
 High precisionmeasurements of Deltarho/rhof<missing VAR>(H,T) have allowed us also to reconstructthe magnetic H-T<missing VAR> phase diagram of Ho0.5Lu0.5B12 and to resolveits magnetic structure as a superposition of 4f (based on localized moments)and 5d (based on SD<missing VAR>W) components.
Featurization terminated normally.
0,0,0,0,0.9230769230769231,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.038461538461538464,0,0,0,0.038461538461538464,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[492.0, 80, 'kOe', 6],[22.0, 4, 'f', 0],[36.0, 5, 'd', 0]

S
###Charge transport in Ho$_x$Lu$_{1-x}$B$_{12}$: Separating Positive and Negative Magnetoresistance in Metals with Magnetic Ions|N. E. Sluchanko,A. L. Khoroshilov,M. A. Anisimov,A. N. Azarevich,A. V. Bogach,V. V. Glushkov,S. V. Demishev,V. N. Krasnorussky,V. V. Voronov,N. Yu. Shitsevalova,V. B. Filippov,A. V. Levchenko,G. Pristas,S. Gabani,K. Flachbart###
(475784, 475784)
 High precisionmeasurements of Deltarho/rhof<missing VAR>(H,T) have allowed us also to reconstructthe magnetic H-T<missing VAR> phase diagram of Ho0.5Lu0.5B12 and to resolveits magnetic structure as a superposition of 4f (based on localized moments)and 5d (based on SD<missing VAR>W) components.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[540.0, 80, 'kOe', 6],[21.0, 4, 'f', 0],[7.0, 5, 'd', 0]

W
###Charge transport in Ho$_x$Lu$_{1-x}$B$_{12}$: Separating Positive and Negative Magnetoresistance in Metals with Magnetic Ions|N. E. Sluchanko,A. L. Khoroshilov,M. A. Anisimov,A. N. Azarevich,A. V. Bogach,V. V. Glushkov,S. V. Demishev,V. N. Krasnorussky,V. V. Voronov,N. Yu. Shitsevalova,V. B. Filippov,A. V. Levchenko,G. Pristas,S. Gabani,K. Flachbart###
(475786, 475786)
 High precisionmeasurements of Deltarho/rhof<missing VAR>(H,T) have allowed us also to reconstructthe magnetic H-T<missing VAR> phase diagram of Ho0.5Lu0.5B12 and to resolveits magnetic structure as a superposition of 4f (based on localized moments)and 5d (based on SD<missing VAR>W) components.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[542.0, 80, 'kOe', 6],[23.0, 4, 'f', 0],[9.0, 5, 'd', 0]

Co
###Giant magnetoresistance in electrodeposited Co-Cu/Cu multilayers: origin of absence of oscillatory behaviour|I. Bakonyi,E. Simon,B. G. Tóth,L. Péter,L. F. Kiss###
(475808, 475808)
Giant magnetoresistance in electrodeposited Co-Cu/Cu multilayers origin of absence of oscillatory behaviour.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 4.5, 'nm', 1],[87.0, 1.5, 'nm', 2],[152.0, 3.5, 'to', 3],[153.0, 4, 'nm', 3],[212.0, 0.75, 'for', 5],[274.0, 1.5, 'nm', 6],[623.0, 1, 'nm', 12]

Cu/Cu
###Giant magnetoresistance in electrodeposited Co-Cu/Cu multilayers: origin of absence of oscillatory behaviour|I. Bakonyi,E. Simon,B. G. Tóth,L. Péter,L. F. Kiss###
(475810, 475812)
Giant magnetoresistance in electrodeposited Co-Cu/Cu multilayers origin of absence of oscillatory behaviour.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[68.0, 4.5, 'nm', 1],[83.0, 1.5, 'nm', 2],[148.0, 3.5, 'to', 3],[149.0, 4, 'nm', 3],[208.0, 0.75, 'for', 5],[270.0, 1.5, 'nm', 6],[619.0, 1, 'nm', 12]

Co/Cu
###Giant magnetoresistance in electrodeposited Co-Cu/Cu multilayers: origin of absence of oscillatory behaviour|I. Bakonyi,E. Simon,B. G. Tóth,L. Péter,L. F. Kiss###
(475856, 475858)
 A detailed study of the evolution of the magnetoresistance was performed onelectrodeposited Co/Cu multilayers with Cu layer thicknesses ranging from 0.5nm to 4.5 nm.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[22.0, 4.5, 'nm', 0],[37.0, 1.5, 'nm', 1],[102.0, 3.5, 'to', 2],[103.0, 4, 'nm', 2],[162.0, 0.75, 'for', 4],[224.0, 1.5, 'nm', 5],[573.0, 1, 'nm', 11]

Cu
###Giant magnetoresistance in electrodeposited Co-Cu/Cu multilayers: origin of absence of oscillatory behaviour|I. Bakonyi,E. Simon,B. G. Tóth,L. Péter,L. F. Kiss###
(475864, 475864)
 A detailed study of the evolution of the magnetoresistance was performed onelectrodeposited Co/Cu multilayers with Cu layer thicknesses ranging from 0.5nm to 4.5 nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 4.5, 'nm', 0],[31.0, 1.5, 'nm', 1],[96.0, 3.5, 'to', 2],[97.0, 4, 'nm', 2],[156.0, 0.75, 'for', 4],[218.0, 1.5, 'nm', 5],[567.0, 1, 'nm', 11]

Cu
###Giant magnetoresistance in electrodeposited Co-Cu/Cu multilayers: origin of absence of oscillatory behaviour|I. Bakonyi,E. Simon,B. G. Tóth,L. Péter,L. F. Kiss###
(475887, 475887)
 For thin Cu layers (up to 1.5 nm), anisotropic magnetoresistance(AMR) was observed whereas multilayers with thicker Cu layers exhibited cleargiant magnetoresistance (GMR) behaviour.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 4.5, 'nm', 1],[8.0, 1.5, 'nm', 0],[73.0, 3.5, 'to', 1],[74.0, 4, 'nm', 1],[133.0, 0.75, 'for', 3],[195.0, 1.5, 'nm', 4],[544.0, 1, 'nm', 10]

Cu
###Giant magnetoresistance in electrodeposited Co-Cu/Cu multilayers: origin of absence of oscillatory behaviour|I. Bakonyi,E. Simon,B. G. Tóth,L. Péter,L. F. Kiss###
(475922, 475922)
 For thin Cu layers (up to 1.5 nm), anisotropic magnetoresistance(AMR) was observed whereas multilayers with thicker Cu layers exhibited cleargiant magnetoresistance (GMR) behaviour.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 4.5, 'nm', 1],[27.0, 1.5, 'nm', 0],[38.0, 3.5, 'to', 1],[39.0, 4, 'nm', 1],[98.0, 0.75, 'for', 3],[160.0, 1.5, 'nm', 4],[509.0, 1, 'nm', 10]

Cu
###Giant magnetoresistance in electrodeposited Co-Cu/Cu multilayers: origin of absence of oscillatory behaviour|I. Bakonyi,E. Simon,B. G. Tóth,L. Péter,L. F. Kiss###
(475963, 475963)
 The GMR magnitude increased up toabout 3.5 to 4 nm Cu layer thickness and slightly decreased afterwards.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 4.5, 'nm', 2],[68.0, 1.5, 'nm', 1],[3.0, 3.5, 'to', 0],[2.0, 4, 'nm', 0],[57.0, 0.75, 'for', 2],[119.0, 1.5, 'nm', 3],[468.0, 1, 'nm', 9]

F
###Giant magnetoresistance in electrodeposited Co-Cu/Cu multilayers: origin of absence of oscillatory behaviour|I. Bakonyi,E. Simon,B. G. Tóth,L. Péter,L. F. Kiss###
(475997, 475997)
According to magnetic measurements, all samples exhibited ferromagnetic (FM)behaviour.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 4.5, 'nm', 3],[102.0, 1.5, 'nm', 2],[37.0, 3.5, 'to', 1],[36.0, 4, 'nm', 1],[23.0, 0.75, 'for', 1],[85.0, 1.5, 'nm', 2],[434.0, 1, 'nm', 8]

F
###Giant magnetoresistance in electrodeposited Co-Cu/Cu multilayers: origin of absence of oscillatory behaviour|I. Bakonyi,E. Simon,B. G. Tóth,L. Péter,L. F. Kiss###
(476059, 476059)
 This clearly indicates the absence of anantiferromagnetic (AF) coupling between adjacent magnetic layers for Cu layerseven above 1.5 nm where the GMR effect occurs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 4.5, 'nm', 5],[164.0, 1.5, 'nm', 4],[99.0, 3.5, 'to', 3],[98.0, 4, 'nm', 3],[39.0, 0.75, 'for', 1],[23.0, 1.5, 'nm', 0],[372.0, 1, 'nm', 6]

Cu
###Giant magnetoresistance in electrodeposited Co-Cu/Cu multilayers: origin of absence of oscillatory behaviour|I. Bakonyi,E. Simon,B. G. Tóth,L. Péter,L. F. Kiss###
(476074, 476074)
 This clearly indicates the absence of anantiferromagnetic (AF) coupling between adjacent magnetic layers for Cu layerseven above 1.5 nm where the GMR effect occurs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[194.0, 4.5, 'nm', 5],[179.0, 1.5, 'nm', 4],[114.0, 3.5, 'to', 3],[113.0, 4, 'nm', 3],[54.0, 0.75, 'for', 1],[8.0, 1.5, 'nm', 0],[357.0, 1, 'nm', 6]

F
###Giant magnetoresistance in electrodeposited Co-Cu/Cu multilayers: origin of absence of oscillatory behaviour|I. Bakonyi,E. Simon,B. G. Tóth,L. Péter,L. F. Kiss###
(476124, 476124)
 The AMR behaviour at low spacerthicknesses indicates the presence of strong FM<missing VAR> coupling (due to, e.g.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[244.0, 4.5, 'nm', 6],[229.0, 1.5, 'nm', 5],[164.0, 3.5, 'to', 4],[163.0, 4, 'nm', 4],[104.0, 0.75, 'for', 2],[42.0, 1.5, 'nm', 1],[307.0, 1, 'nm', 5]

Cu
###Giant magnetoresistance in electrodeposited Co-Cu/Cu multilayers: origin of absence of oscillatory behaviour|I. Bakonyi,E. Simon,B. G. Tóth,L. Péter,L. F. Kiss###
(476162, 476162)
,pin-holes in the spacer and/or areas of the Cu layer where the layer thicknessis very small).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[282.0, 4.5, 'nm', 7],[267.0, 1.5, 'nm', 6],[202.0, 3.5, 'to', 5],[201.0, 4, 'nm', 5],[142.0, 0.75, 'for', 3],[80.0, 1.5, 'nm', 2],[269.0, 1, 'nm', 4]

F
###Giant magnetoresistance in electrodeposited Co-Cu/Cu multilayers: origin of absence of oscillatory behaviour|I. Bakonyi,E. Simon,B. G. Tóth,L. Péter,L. F. Kiss###
(476234, 476234)
 With increasing spacer thickness, the pin-hole density reducesand/or the layer thickness uniformity improves which both lead to a weakeningof the FM<missing VAR> coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[354.0, 4.5, 'nm', 8],[339.0, 1.5, 'nm', 7],[274.0, 3.5, 'to', 6],[273.0, 4, 'nm', 6],[214.0, 0.75, 'for', 4],[152.0, 1.5, 'nm', 3],[197.0, 1, 'nm', 3]

Co/Cu
###Giant magnetoresistance in electrodeposited Co-Cu/Cu multilayers: origin of absence of oscillatory behaviour|I. Bakonyi,E. Simon,B. G. Tóth,L. Péter,L. F. Kiss###
(476416, 476418)
 The large GMR reportedpreviously on such Co/Cu multilayers at Cu layer thicknesses around 1 nm can beattributed to the presence of a fairly large superparamagnetic (SPM) fractionrather than being due to a strong AF coupling.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[536.0, 4.5, 'nm', 11],[521.0, 1.5, 'nm', 10],[456.0, 3.5, 'to', 9],[455.0, 4, 'nm', 9],[396.0, 0.75, 'for', 7],[334.0, 1.5, 'nm', 6],[13.0, 1, 'nm', 0]

Cu
###Giant magnetoresistance in electrodeposited Co-Cu/Cu multilayers: origin of absence of oscillatory behaviour|I. Bakonyi,E. Simon,B. G. Tóth,L. Péter,L. F. Kiss###
(476424, 476424)
 The large GMR reportedpreviously on such Co/Cu multilayers at Cu layer thicknesses around 1 nm can beattributed to the presence of a fairly large superparamagnetic (SPM) fractionrather than being due to a strong AF coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[544.0, 4.5, 'nm', 11],[529.0, 1.5, 'nm', 10],[464.0, 3.5, 'to', 9],[463.0, 4, 'nm', 9],[404.0, 0.75, 'for', 7],[342.0, 1.5, 'nm', 6],[7.0, 1, 'nm', 0]

SP
###Giant magnetoresistance in electrodeposited Co-Cu/Cu multilayers: origin of absence of oscillatory behaviour|I. Bakonyi,E. Simon,B. G. Tóth,L. Péter,L. F. Kiss###
(476457, 476458)
 The large GMR reportedpreviously on such Co/Cu multilayers at Cu layer thicknesses around 1 nm can beattributed to the presence of a fairly large superparamagnetic (SPM) fractionrather than being due to a strong AF coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[577.0, 4.5, 'nm', 11],[562.0, 1.5, 'nm', 10],[497.0, 3.5, 'to', 9],[496.0, 4, 'nm', 9],[437.0, 0.75, 'for', 7],[375.0, 1.5, 'nm', 6],[26.0, 1, 'nm', 0]

F
###Giant magnetoresistance in electrodeposited Co-Cu/Cu multilayers: origin of absence of oscillatory behaviour|I. Bakonyi,E. Simon,B. G. Tóth,L. Péter,L. F. Kiss###
(476480, 476480)
 The large GMR reportedpreviously on such Co/Cu multilayers at Cu layer thicknesses around 1 nm can beattributed to the presence of a fairly large superparamagnetic (SPM) fractionrather than being due to a strong AF coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[600.0, 4.5, 'nm', 11],[585.0, 1.5, 'nm', 10],[520.0, 3.5, 'to', 9],[519.0, 4, 'nm', 9],[460.0, 0.75, 'for', 7],[398.0, 1.5, 'nm', 6],[49.0, 1, 'nm', 0]

TaAs
###Planar Hall-effect, Anomalous planar Hall-effect, and Magnetic Field-Induced Phase Transitions in TaAs|Q. R. Zhang,B. Zeng,Y. C. Chiu,R. Schoenemann,S. Memaran,W. Zheng,D. Rhodes,K. -W. Chen,T. Besara,R. Sankar,F. Chou,G. T. McCandless,J. Y. Chan,N. Alidoust,S. -Y. Xu,I. Belopolski,M. Z. Hasan,F. F. Balakirev,L. Balicas###
(476523, 476524)
Planar Hall-effect, Anomalous planar Hall-effect, and Magnetic Field-Induced Phase Transitions in TaAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[369.0, 100, 'K', 7]

TaAs
###Planar Hall-effect, Anomalous planar Hall-effect, and Magnetic Field-Induced Phase Transitions in TaAs|Q. R. Zhang,B. Zeng,Y. C. Chiu,R. Schoenemann,S. Memaran,W. Zheng,D. Rhodes,K. -W. Chen,T. Besara,R. Sankar,F. Chou,G. T. McCandless,J. Y. Chan,N. Alidoust,S. -Y. Xu,I. Belopolski,M. Z. Hasan,F. F. Balakirev,L. Balicas###
(476539, 476540)
 We evaluate the topological character of TaAs through a detailed study of theangular, magnetic-field and temperature dependence of its magnetoresistivityand Hall-effect(s), and of its bulk electronic structure through quantumoscillatory phenomena.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[353.0, 100, 'K', 6]

At
###Planar Hall-effect, Anomalous planar Hall-effect, and Magnetic Field-Induced Phase Transitions in TaAs|Q. R. Zhang,B. Zeng,Y. C. Chiu,R. Schoenemann,S. Memaran,W. Zheng,D. Rhodes,K. -W. Chen,T. Besara,R. Sankar,F. Chou,G. T. McCandless,J. Y. Chan,N. Alidoust,S. -Y. Xu,I. Belopolski,M. Z. Hasan,F. F. Balakirev,L. Balicas###
(476607, 476607)
 At low temperatures, and for fields perpendicular to theelectrical current, we extract an extremely large Hall angle ThetaH athigher fields, that is ThetaH sim 82.5circ, implying a very pronouncedHall signal superimposed into its magnetoresistivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[286.0, 100, 'K', 5]

H
###Planar Hall-effect, Anomalous planar Hall-effect, and Magnetic Field-Induced Phase Transitions in TaAs|Q. R. Zhang,B. Zeng,Y. C. Chiu,R. Schoenemann,S. Memaran,W. Zheng,D. Rhodes,K. -W. Chen,T. Besara,R. Sankar,F. Chou,G. T. McCandless,J. Y. Chan,N. Alidoust,S. -Y. Xu,I. Belopolski,M. Z. Hasan,F. F. Balakirev,L. Balicas###
(476647, 476647)
 At low temperatures, and for fields perpendicular to theelectrical current, we extract an extremely large Hall angle ThetaH athigher fields, that is ThetaH sim 82.5circ, implying a very pronouncedHall signal superimposed into its magnetoresistivity.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[246.0, 100, 'K', 5]

H
###Planar Hall-effect, Anomalous planar Hall-effect, and Magnetic Field-Induced Phase Transitions in TaAs|Q. R. Zhang,B. Zeng,Y. C. Chiu,R. Schoenemann,S. Memaran,W. Zheng,D. Rhodes,K. -W. Chen,T. Besara,R. Sankar,F. Chou,G. T. McCandless,J. Y. Chan,N. Alidoust,S. -Y. Xu,I. Belopolski,M. Z. Hasan,F. F. Balakirev,L. Balicas###
(476662, 476662)
 At low temperatures, and for fields perpendicular to theelectrical current, we extract an extremely large Hall angle ThetaH athigher fields, that is ThetaH sim 82.5circ, implying a very pronouncedHall signal superimposed into its magnetoresistivity.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[231.0, 100, 'K', 5]

K
###Planar Hall-effect, Anomalous planar Hall-effect, and Magnetic Field-Induced Phase Transitions in TaAs|Q. R. Zhang,B. Zeng,Y. C. Chiu,R. Schoenemann,S. Memaran,W. Zheng,D. Rhodes,K. -W. Chen,T. Besara,R. Sankar,F. Chou,G. T. McCandless,J. Y. Chan,N. Alidoust,S. -Y. Xu,I. Belopolski,M. Z. Hasan,F. F. Balakirev,L. Balicas###
(476790, 476790)
 as highas T<missing VAR>  100 K, and predicted recently to result from the chiral anomaly amongWeyl points.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 100, 'K', 2]

FS
###Planar Hall-effect, Anomalous planar Hall-effect, and Magnetic Field-Induced Phase Transitions in TaAs|Q. R. Zhang,B. Zeng,Y. C. Chiu,R. Schoenemann,S. Memaran,W. Zheng,D. Rhodes,K. -W. Chen,T. Besara,R. Sankar,F. Chou,G. T. McCandless,J. Y. Chan,N. Alidoust,S. -Y. Xu,I. Belopolski,M. Z. Hasan,F. F. Balakirev,L. Balicas###
(477009, 477010)
 Our measurements reveal a phase transition upon approaching thequantum limit that leads to the reconstruction of the FS and to the concomitantsuppression of the negative LMR indicating that it is intrinsically associatedwith the Weyl dispersion at the Fermi level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 100, 'K', 1]

Si
###Spin transport in Si-based spin metal-oxide-semiconductor field-effect transistors: Spin drift effect in the inversion channel and spin relaxation in the n+-Si source/drain regions|Shoichi Sato,Masaaki Tanaka,Ryosho Nakane###
(477163, 477163)
Spin transport in Si-based spin metal-oxide-semiconductor field-effect transistors Spin drift effect in the inversion channel and spin relaxation in the n<missing VAR>-Si source/drain regions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[211.0, 99, ',', 4]

Si
###Spin transport in Si-based spin metal-oxide-semiconductor field-effect transistors: Spin drift effect in the inversion channel and spin relaxation in the n+-Si source/drain regions|Shoichi Sato,Masaaki Tanaka,Ryosho Nakane###
(477207, 477207)
Spin transport in Si-based spin metal-oxide-semiconductor field-effect transistors Spin drift effect in the inversion channel and spin relaxation in the n<missing VAR>-Si source/drain regions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 99, ',', 4]

Si
###Spin transport in Si-based spin metal-oxide-semiconductor field-effect transistors: Spin drift effect in the inversion channel and spin relaxation in the n+-Si source/drain regions|Shoichi Sato,Masaaki Tanaka,Ryosho Nakane###
(477253, 477253)
 We have experimentally and theoretically investigated the electron spintransport and spin distribution at room temperature in a Si two-dimensional(2D) inversion channel of back-gate-type spin metal-oxide-semiconductorfield-effect transistors (spin M<missing VAR>OSFE<missing VAR>Ts).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 99, ',', 3]

OSF
###Spin transport in Si-based spin metal-oxide-semiconductor field-effect transistors: Spin drift effect in the inversion channel and spin relaxation in the n+-Si source/drain regions|Shoichi Sato,Masaaki Tanaka,Ryosho Nakane###
(477296, 477298)
 We have experimentally and theoretically investigated the electron spintransport and spin distribution at room temperature in a Si two-dimensional(2D) inversion channel of back-gate-type spin metal-oxide-semiconductorfield-effect transistors (spin M<missing VAR>OSFE<missing VAR>Ts).
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 99, ',', 3]

OSF
###Spin transport in Si-based spin metal-oxide-semiconductor field-effect transistors: Spin drift effect in the inversion channel and spin relaxation in the n+-Si source/drain regions|Shoichi Sato,Masaaki Tanaka,Ryosho Nakane###
(477318, 477320)
 The magnetoresistance ratio of thespin M<missing VAR>OSFET with a channel length of 0.4mum<missing VAR> was increased by a factor of 6from that in our previous paper [Phys.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 99, ',', 2]

B
###Spin transport in Si-based spin metal-oxide-semiconductor field-effect transistors: Spin drift effect in the inversion channel and spin relaxation in the n+-Si source/drain regions|Shoichi Sato,Masaaki Tanaka,Ryosho Nakane###
(477372, 477372)
 B 99, 165301 (2019)] by loweringthe parasitic resistances at the source/drain junctions withhighly-phosphorus-doped n<missing VAR>-Si regions and by increasing the lateral electricfield in the channel along the electron transport, called spin drift.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 99, ',', 0]

Si
###Spin transport in Si-based spin metal-oxide-semiconductor field-effect transistors: Spin drift effect in the inversion channel and spin relaxation in the n+-Si source/drain regions|Shoichi Sato,Masaaki Tanaka,Ryosho Nakane###
(477416, 477416)
 B 99, 165301 (2019)] by loweringthe parasitic resistances at the source/drain junctions withhighly-phosphorus-doped n<missing VAR>-Si regions and by increasing the lateral electricfield in the channel along the electron transport, called spin drift.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 99, ',', 0]

OSF
###Spin transport in Si-based spin metal-oxide-semiconductor field-effect transistors: Spin drift effect in the inversion channel and spin relaxation in the n+-Si source/drain regions|Shoichi Sato,Masaaki Tanaka,Ryosho Nakane###
(477483, 477485)
 ClearHanle signals with some oscillation peaks were observed for the spin M<missing VAR>OSFETwith a channel length of 10 mu m<missing VAR> under the lateral electric field,indicating that the effective spin diffusion length is dramatically enhanced bythe spin drift.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 99, ',', 1]

Si
###Spin transport in Si-based spin metal-oxide-semiconductor field-effect transistors: Spin drift effect in the inversion channel and spin relaxation in the n+-Si source/drain regions|Shoichi Sato,Masaaki Tanaka,Ryosho Nakane###
(477560, 477560)
 By taking into account the n<missing VAR>-Si regions and the spin drift inthe channel, one-dimensional analytic functions were derived for analyzing theeffect of the spin drift on the spin transport through the channel and thesefunctions were found to explain almost all the experimental results.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, 99, ',', 2]

Si
###Spin transport in Si-based spin metal-oxide-semiconductor field-effect transistors: Spin drift effect in the inversion channel and spin relaxation in the n+-Si source/drain regions|Shoichi Sato,Masaaki Tanaka,Ryosho Nakane###
(477752, 477752)
 From thecalculated spin current and spin distribution, it was revealed that almost allthe spins are unflipped during the spin-drift-assisted transport through the0.4-mum<missing VAR>-long inversion channel, but the most part of the injected spins fromthe source electrode are relaxed in the n<missing VAR>-Si regions of both the source anddrain junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[378.0, 99, ',', 3]

OSF
###Spin transport in Si-based spin metal-oxide-semiconductor field-effect transistors: Spin drift effect in the inversion channel and spin relaxation in the n+-Si source/drain regions|Shoichi Sato,Masaaki Tanaka,Ryosho Nakane###
(477879, 477881)
Furthermore, we showed that the effective spin resistances that are introducedin this study are very helpful to understand how to improve themagnetoresistance ratio of spin M<missing VAR>OSFE<missing VAR>Ts for practical use.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[505.0, 99, ',', 5]

B
###Magnetotransport in a model of a disordered strange metal|Aavishkar A. Patel,John McGreevy,Daniel P. Arovas,Subir Sachdev###
(477996, 477996)
 Recent experiments showing anunexpected linear-in-field, B, magnetoresistivity have deepened the puzzle.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Magnetotransport in a model of a disordered strange metal|Aavishkar A. Patel,John McGreevy,Daniel P. Arovas,Subir Sachdev###
(478075, 478075)
This model is solvable in a large-N limit, and can reproduce observedbehavior.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Magnetotransport in a model of a disordered strange metal|Aavishkar A. Patel,John McGreevy,Daniel P. Arovas,Subir Sachdev###
(478361, 478361)
 We show that the MFL regime has conductivities which scale as afunction of B/T<missing VAR>; however, its magnetoresistance saturates at large B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Magnetotransport in a model of a disordered strange metal|Aavishkar A. Patel,John McGreevy,Daniel P. Arovas,Subir Sachdev###
(478379, 478379)
 We show that the MFL regime has conductivities which scale as afunction of B/T<missing VAR>; however, its magnetoresistance saturates at large B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Magnetotransport in a model of a disordered strange metal|Aavishkar A. Patel,John McGreevy,Daniel P. Arovas,Subir Sachdev###
(478404, 478404)
 Wethen consider a macroscopically disordered sample with domains of M<missing VAR>FLs withvarying densities of electrons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Magnetotransport in a model of a disordered strange metal|Aavishkar A. Patel,John McGreevy,Daniel P. Arovas,Subir Sachdev###
(478458, 478458)
 Using an effective-medium approximation, weobtain a macroscopic electrical resistance that scales linearly in the magneticfield B applied perpendicular to the plane of the sample, at large B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Magnetotransport in a model of a disordered strange metal|Aavishkar A. Patel,John McGreevy,Daniel P. Arovas,Subir Sachdev###
(478481, 478481)
 Using an effective-medium approximation, weobtain a macroscopic electrical resistance that scales linearly in the magneticfield B applied perpendicular to the plane of the sample, at large B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Magnetotransport in a model of a disordered strange metal|Aavishkar A. Patel,John McGreevy,Daniel P. Arovas,Subir Sachdev###
(478503, 478503)
 Theresistance also scales linearly in T<missing VAR> at small B, and as T f(B/T) atintermediate B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Magnetotransport in a model of a disordered strange metal|Aavishkar A. Patel,John McGreevy,Daniel P. Arovas,Subir Sachdev###
(478514, 478514)
 Theresistance also scales linearly in T<missing VAR> at small B, and as T f(B/T) atintermediate B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Magnetotransport in a model of a disordered strange metal|Aavishkar A. Patel,John McGreevy,Daniel P. Arovas,Subir Sachdev###
(478524, 478524)
 Theresistance also scales linearly in T<missing VAR> at small B, and as T f(B/T) atintermediate B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magnetoresistance of a three-dimensional Dirac gas|Viktor Könye,Masao Ogata###
(478647, 478647)
 In the zero-mass limit, the case of gapless Dirac semimetals is alsostudied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[304.0, -1, ',', 6]

In
###Magnetoresistance of a three-dimensional Dirac gas|Viktor Könye,Masao Ogata###
(478678, 478678)
 In the case of Weyl semimetals, to reproduce the nonsaturating linearmagnetoresistance seen in experiments, the use of screened charged impuritiesis inevitable.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[273.0, -1, ',', 5]

In
###Magnetoresistance of a three-dimensional Dirac gas|Viktor Könye,Masao Ogata###
(478729, 478729)
 In this paper, these are included using the first Bornapproximation for the self-energy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[222.0, -1, ',', 4]

B
###Magnetoresistance of a three-dimensional Dirac gas|Viktor Könye,Masao Ogata###
(478937, 478937)
 Weshow that in the extreme quantum limit at very high magnetic fields the gappedDirac materials are expected to have sigmaxxpropto B-3 leading tovarrhoxxpropto B-1, in contrast with the gapless case wheresigmaxxpropto B-1 and varrhoxxpropto B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, -1, ',', 0]

B
###Magnetoresistance of a three-dimensional Dirac gas|Viktor Könye,Masao Ogata###
(478950, 478950)
 Weshow that in the extreme quantum limit at very high magnetic fields the gappedDirac materials are expected to have sigmaxxpropto B-3 leading tovarrhoxxpropto B-1, in contrast with the gapless case wheresigmaxxpropto B-1 and varrhoxxpropto B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[1.0, -1, ',', 0]

B
###Magnetoresistance of a three-dimensional Dirac gas|Viktor Könye,Masao Ogata###
(478974, 478974)
 Weshow that in the extreme quantum limit at very high magnetic fields the gappedDirac materials are expected to have sigmaxxpropto B-3 leading tovarrhoxxpropto B-1, in contrast with the gapless case wheresigmaxxpropto B-1 and varrhoxxpropto B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, -1, ',', 0]

B
###Magnetoresistance of a three-dimensional Dirac gas|Viktor Könye,Masao Ogata###
(478984, 478984)
 Weshow that in the extreme quantum limit at very high magnetic fields the gappedDirac materials are expected to have sigmaxxpropto B-3 leading tovarrhoxxpropto B-1, in contrast with the gapless case wheresigmaxxpropto B-1 and varrhoxxpropto B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, -1, ',', 0]

At
###Magnetoresistance of a three-dimensional Dirac gas|Viktor Könye,Masao Ogata###
(478987, 478987)
 At lower fields, wefind that the effect of the mass term is negligible and in the region of theShubnikov-de Haas oscillations the two systems behave almost identically.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, -1, ',', 1]

Nd
###Role of f-d exchange interaction and Kondo scattering in Nd doped pyrochlore Iridate (Eu1-xNdx)2Ir2O7|Sampad Mondal,M. Modak,B. Maji,M. K. Ray,S. Mandal,Swapan K. Mandal,M. Sardar,S. Banerjee###
(479193, 479193)
Role of f-d exchange interaction and Kondo scattering in Nd doped pyrochlore Iridate (Eu1-xNdx)2Ir2O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 0.0, ',', 1],[71.0, 0.5, 'and', 1],[73.0, 1.0, ',', 1],[254.0, 10, 'K', 5],[292.0, 50, 'kOe', 5],[397.0, 0.0, 'does', 8]

Eu1-x
###Role of f-d exchange interaction and Kondo scattering in Nd doped pyrochlore Iridate (Eu1-xNdx)2Ir2O7|Sampad Mondal,M. Modak,B. Maji,M. K. Ray,S. Mandal,Swapan K. Mandal,M. Sardar,S. Banerjee###
(479202, 479205)
Role of f-d exchange interaction and Kondo scattering in Nd doped pyrochlore Iridate (Eu1-xNdx)2Ir2O7.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[57.0, 0.0, ',', 1],[59.0, 0.5, 'and', 1],[61.0, 1.0, ',', 1],[242.0, 10, 'K', 5],[280.0, 50, 'kOe', 5],[385.0, 0.0, 'does', 8]

Ir2O7
###Role of f-d exchange interaction and Kondo scattering in Nd doped pyrochlore Iridate (Eu1-xNdx)2Ir2O7|Sampad Mondal,M. Modak,B. Maji,M. K. Ray,S. Mandal,Swapan K. Mandal,M. Sardar,S. Banerjee###
(479209, 479212)
Role of f-d exchange interaction and Kondo scattering in Nd doped pyrochlore Iridate (Eu1-xNdx)2Ir2O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0.7777777777777778,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 0.0, ',', 1],[52.0, 0.5, 'and', 1],[54.0, 1.0, ',', 1],[235.0, 10, 'K', 5],[273.0, 50, 'kOe', 5],[378.0, 0.0, 'does', 8]

Eu1-x
###Role of f-d exchange interaction and Kondo scattering in Nd doped pyrochlore Iridate (Eu1-xNdx)2Ir2O7|Sampad Mondal,M. Modak,B. Maji,M. K. Ray,S. Mandal,Swapan K. Mandal,M. Sardar,S. Banerjee###
(479247, 479250)
 We report study of magnetization, resistivity, magnetoresistance and specificheat of the pyrochlore Iridate (Eu1-xNdx)2Ir2O7 with x<missing VAR>0.0, 0.5 and 1.0, wherespin orbit coupling, electronic correlation, magnetic frustration and Kondoscattering coexists.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[12.0, 0.0, ',', 0],[14.0, 0.5, 'and', 0],[16.0, 1.0, ',', 0],[197.0, 10, 'K', 4],[235.0, 50, 'kOe', 4],[340.0, 0.0, 'does', 7]

Ir2O7
###Role of f-d exchange interaction and Kondo scattering in Nd doped pyrochlore Iridate (Eu1-xNdx)2Ir2O7|Sampad Mondal,M. Modak,B. Maji,M. K. Ray,S. Mandal,Swapan K. Mandal,M. Sardar,S. Banerjee###
(479254, 479257)
 We report study of magnetization, resistivity, magnetoresistance and specificheat of the pyrochlore Iridate (Eu1-xNdx)2Ir2O7 with x<missing VAR>0.0, 0.5 and 1.0, wherespin orbit coupling, electronic correlation, magnetic frustration and Kondoscattering coexists.
Featurization terminated normally.
0,0,0,0,0,0,0,0.7777777777777778,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 0.0, ',', 0],[7.0, 0.5, 'and', 0],[9.0, 1.0, ',', 0],[190.0, 10, 'K', 4],[228.0, 50, 'kOe', 4],[333.0, 0.0, 'does', 7]

I
###Role of f-d exchange interaction and Kondo scattering in Nd doped pyrochlore Iridate (Eu1-xNdx)2Ir2O7|Sampad Mondal,M. Modak,B. Maji,M. K. Ray,S. Mandal,Swapan K. Mandal,M. Sardar,S. Banerjee###
(479309, 479309)
 Metal insulator transition temperature (TMI) decreasewith increase in Nd content but always coincides with magnetic irreversibilitytemperature (field induced moment).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 0.0, ',', 1],[45.0, 0.5, 'and', 1],[43.0, 1.0, ',', 1],[138.0, 10, 'K', 3],[176.0, 50, 'kOe', 3],[281.0, 0.0, 'does', 6]

Nd
###Role of f-d exchange interaction and Kondo scattering in Nd doped pyrochlore Iridate (Eu1-xNdx)2Ir2O7|Sampad Mondal,M. Modak,B. Maji,M. K. Ray,S. Mandal,Swapan K. Mandal,M. Sardar,S. Banerjee###
(479321, 479321)
 Metal insulator transition temperature (TMI) decreasewith increase in Nd content but always coincides with magnetic irreversibilitytemperature (field induced moment).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 0.0, ',', 1],[57.0, 0.5, 'and', 1],[55.0, 1.0, ',', 1],[126.0, 10, 'K', 3],[164.0, 50, 'kOe', 3],[269.0, 0.0, 'does', 6]

I
###Role of f-d exchange interaction and Kondo scattering in Nd doped pyrochlore Iridate (Eu1-xNdx)2Ir2O7|Sampad Mondal,M. Modak,B. Maji,M. K. Ray,S. Mandal,Swapan K. Mandal,M. Sardar,S. Banerjee###
(479355, 479355)
 Resistivity below TMI do not fit witheither activated (gap) or to any power law (gapless) dependence.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 0.0, ',', 2],[91.0, 0.5, 'and', 2],[89.0, 1.0, ',', 2],[92.0, 10, 'K', 2],[130.0, 50, 'kOe', 2],[235.0, 0.0, 'does', 5]

Nd
###Role of f-d exchange interaction and Kondo scattering in Nd doped pyrochlore Iridate (Eu1-xNdx)2Ir2O7|Sampad Mondal,M. Modak,B. Maji,M. K. Ray,S. Mandal,Swapan K. Mandal,M. Sardar,S. Banerjee###
(479407, 479407)
 The Curieconstant show surprising result, that Nd induces singlet correlation (reductionof para-moment) in Ir sublattice.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 0.0, ',', 3],[143.0, 0.5, 'and', 3],[141.0, 1.0, ',', 3],[40.0, 10, 'K', 1],[78.0, 50, 'kOe', 1],[183.0, 0.0, 'does', 4]

Ir
###Role of f-d exchange interaction and Kondo scattering in Nd doped pyrochlore Iridate (Eu1-xNdx)2Ir2O7|Sampad Mondal,M. Modak,B. Maji,M. K. Ray,S. Mandal,Swapan K. Mandal,M. Sardar,S. Banerjee###
(479428, 479428)
 The Curieconstant show surprising result, that Nd induces singlet correlation (reductionof para-moment) in Ir sublattice.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 0.0, ',', 3],[164.0, 0.5, 'and', 3],[162.0, 1.0, ',', 3],[19.0, 10, 'K', 1],[57.0, 50, 'kOe', 1],[162.0, 0.0, 'does', 4]

Nd
###Role of f-d exchange interaction and Kondo scattering in Nd doped pyrochlore Iridate (Eu1-xNdx)2Ir2O7|Sampad Mondal,M. Modak,B. Maji,M. K. Ray,S. Mandal,Swapan K. Mandal,M. Sardar,S. Banerjee###
(479508, 479508)
 Lowtemperature specific heat shows Schottky peak, coming from Nd moments, showingexistence of doublet split in Nd energy level, arising from f-d exchangeinteraction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[246.0, 0.0, ',', 5],[244.0, 0.5, 'and', 5],[242.0, 1.0, ',', 5],[61.0, 10, 'K', 1],[23.0, 50, 'kOe', 1],[82.0, 0.0, 'does', 2]

Nd
###Role of f-d exchange interaction and Kondo scattering in Nd doped pyrochlore Iridate (Eu1-xNdx)2Ir2O7|Sampad Mondal,M. Modak,B. Maji,M. K. Ray,S. Mandal,Swapan K. Mandal,M. Sardar,S. Banerjee###
(479526, 479526)
 Lowtemperature specific heat shows Schottky peak, coming from Nd moments, showingexistence of doublet split in Nd energy level, arising from f-d exchangeinteraction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[264.0, 0.0, ',', 5],[262.0, 0.5, 'and', 5],[260.0, 1.0, ',', 5],[79.0, 10, 'K', 1],[41.0, 50, 'kOe', 1],[64.0, 0.0, 'does', 2]

Nd
###Role of f-d exchange interaction and Kondo scattering in Nd doped pyrochlore Iridate (Eu1-xNdx)2Ir2O7|Sampad Mondal,M. Modak,B. Maji,M. K. Ray,S. Mandal,Swapan K. Mandal,M. Sardar,S. Banerjee###
(479669, 479669)
 We propose that with the introduction ofNd at Eu site the system evolves from chiral spin liquid with gapless spinonexcitations with a very small charge gap to Kondo type interaction superposedon chiral spin liquid coexisting with long range antiferromagnetic ordering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[407.0, 0.0, ',', 9],[405.0, 0.5, 'and', 9],[403.0, 1.0, ',', 9],[222.0, 10, 'K', 5],[184.0, 50, 'kOe', 5],[79.0, 0.0, 'does', 2]

Eu
###Role of f-d exchange interaction and Kondo scattering in Nd doped pyrochlore Iridate (Eu1-xNdx)2Ir2O7|Sampad Mondal,M. Modak,B. Maji,M. K. Ray,S. Mandal,Swapan K. Mandal,M. Sardar,S. Banerjee###
(479673, 479673)
 We propose that with the introduction ofNd at Eu site the system evolves from chiral spin liquid with gapless spinonexcitations with a very small charge gap to Kondo type interaction superposedon chiral spin liquid coexisting with long range antiferromagnetic ordering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[411.0, 0.0, ',', 9],[409.0, 0.5, 'and', 9],[407.0, 1.0, ',', 9],[226.0, 10, 'K', 5],[188.0, 50, 'kOe', 5],[83.0, 0.0, 'does', 2]

Nd
###Role of f-d exchange interaction and Kondo scattering in Nd doped pyrochlore Iridate (Eu1-xNdx)2Ir2O7|Sampad Mondal,M. Modak,B. Maji,M. K. Ray,S. Mandal,Swapan K. Mandal,M. Sardar,S. Banerjee###
(479759, 479759)
Huge increase of magnetoresistance with increase in Nd concentrations showsimportance of Kondo scattering in the chiral spin liquid material by rare earthmoments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[497.0, 0.0, ',', 10],[495.0, 0.5, 'and', 10],[493.0, 1.0, ',', 10],[312.0, 10, 'K', 6],[274.0, 50, 'kOe', 6],[169.0, 0.0, 'does', 3]

Ho4RhAl
###Magnetic frustration and paramagnetic state transport anomalies in Ho4RhAl and Er4RhAl: Possible test cases for newly identified roles of itinerant electrons|Ram Kumar,E. V. Sampathkumaran###
(479820, 479823)
Magnetic frustration and paramagnetic state transport anomalies in Ho4RhAl and Er4RhAl Possible test cases for newly identified roles of itinerant electrons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 3, 'sites', 1],[111.0, 4.0, 'K', 2],[155.0, 5, 'K', 3]

Er4RhAl
###Magnetic frustration and paramagnetic state transport anomalies in Ho4RhAl and Er4RhAl: Possible test cases for newly identified roles of itinerant electrons|Ram Kumar,E. V. Sampathkumaran###
(479827, 479830)
Magnetic frustration and paramagnetic state transport anomalies in Ho4RhAl and Er4RhAl Possible test cases for newly identified roles of itinerant electrons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 3, 'sites', 1],[104.0, 4.0, 'K', 2],[148.0, 5, 'K', 3]

Ho4RhAl
###Magnetic frustration and paramagnetic state transport anomalies in Ho4RhAl and Er4RhAl: Possible test cases for newly identified roles of itinerant electrons|Ram Kumar,E. V. Sampathkumaran###
(479882, 479885)
 We report the results of magnetic, heat-capacity, electrical andmagnetoresistance measurements on Ho4RhAl and Er4RhAl, characterized by 3 sitesfor rare-earths (R).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 3, 'sites', 0],[49.0, 4.0, 'K', 1],[93.0, 5, 'K', 2]

Er4RhAl
###Magnetic frustration and paramagnetic state transport anomalies in Ho4RhAl and Er4RhAl: Possible test cases for newly identified roles of itinerant electrons|Ram Kumar,E. V. Sampathkumaran###
(479889, 479892)
 We report the results of magnetic, heat-capacity, electrical andmagnetoresistance measurements on Ho4RhAl and Er4RhAl, characterized by 3 sitesfor rare-earths (R).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 3, 'sites', 0],[42.0, 4.0, 'K', 1],[86.0, 5, 'K', 2]

N
###Magnetic frustration and paramagnetic state transport anomalies in Ho4RhAl and Er4RhAl: Possible test cases for newly identified roles of itinerant electrons|Ram Kumar,E. V. Sampathkumaran###
(479924, 479924)
 Antiferromagnetic ordering sets in at (T<missing VAR>N ) about 8.8and 4.0 K respectively.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 3, 'sites', 1],[10.0, 4.0, 'K', 0],[54.0, 5, 'K', 1]

Ho
###Magnetic frustration and paramagnetic state transport anomalies in Ho4RhAl and Er4RhAl: Possible test cases for newly identified roles of itinerant electrons|Ram Kumar,E. V. Sampathkumaran###
(479941, 479941)
 While Ho compound appears to enter into a complexspin-glass phase at T<missing VAR> less thanT<missing VAR>N (at nearly 5 K), spin-glass componentappears to set in essentially almost at T<missing VAR>N for the Er case.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 3, 'sites', 2],[7.0, 4.0, 'K', 1],[37.0, 5, 'K', 0]

N
###Magnetic frustration and paramagnetic state transport anomalies in Ho4RhAl and Er4RhAl: Possible test cases for newly identified roles of itinerant electrons|Ram Kumar,E. V. Sampathkumaran###
(479972, 479972)
 While Ho compound appears to enter into a complexspin-glass phase at T<missing VAR> less thanT<missing VAR>N (at nearly 5 K), spin-glass componentappears to set in essentially almost at T<missing VAR>N for the Er case.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 3, 'sites', 2],[38.0, 4.0, 'K', 1],[6.0, 5, 'K', 0]

N
###Magnetic frustration and paramagnetic state transport anomalies in Ho4RhAl and Er4RhAl: Possible test cases for newly identified roles of itinerant electrons|Ram Kumar,E. V. Sampathkumaran###
(480004, 480004)
 While Ho compound appears to enter into a complexspin-glass phase at T<missing VAR> less thanT<missing VAR>N (at nearly 5 K), spin-glass componentappears to set in essentially almost at T<missing VAR>N for the Er case.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 3, 'sites', 2],[70.0, 4.0, 'K', 1],[26.0, 5, 'K', 0]

Er
###Magnetic frustration and paramagnetic state transport anomalies in Ho4RhAl and Er4RhAl: Possible test cases for newly identified roles of itinerant electrons|Ram Kumar,E. V. Sampathkumaran###
(480010, 480010)
 While Ho compound appears to enter into a complexspin-glass phase at T<missing VAR> less thanT<missing VAR>N (at nearly 5 K), spin-glass componentappears to set in essentially almost at T<missing VAR>N for the Er case.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 3, 'sites', 2],[76.0, 4.0, 'K', 1],[32.0, 5, 'K', 0]

Gd2PdSi3
###Magnetic frustration and paramagnetic state transport anomalies in Ho4RhAl and Er4RhAl: Possible test cases for newly identified roles of itinerant electrons|Ram Kumar,E. V. Sampathkumaran###
(480054, 480058)
 The loss of thespin-disorder contribution in the magnetically ordered state is not pronounced,mimicking that in Gd2PdSi3, a compound which now attracts interest in the areaof topological Hall effect and magnetic skyrmions, indicating complex Fermisurface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 3, 'sites', 3],[120.0, 4.0, 'K', 2],[76.0, 5, 'K', 1]

Ho
###Magnetic frustration and paramagnetic state transport anomalies in Ho4RhAl and Er4RhAl: Possible test cases for newly identified roles of itinerant electrons|Ram Kumar,E. V. Sampathkumaran###
(480138, 480138)
 There is a minimum in the temperature dependence of electricalresistivity in the case of only Ho above T<missing VAR>N, but significant negativemagnetoresistance is observed over a wide temperature range in the paramagneticstate increasing with decreasing temperature for both the cases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[240.0, 3, 'sites', 4],[204.0, 4.0, 'K', 3],[160.0, 5, 'K', 2]

N
###Magnetic frustration and paramagnetic state transport anomalies in Ho4RhAl and Er4RhAl: Possible test cases for newly identified roles of itinerant electrons|Ram Kumar,E. V. Sampathkumaran###
(480143, 480143)
 There is a minimum in the temperature dependence of electricalresistivity in the case of only Ho above T<missing VAR>N, but significant negativemagnetoresistance is observed over a wide temperature range in the paramagneticstate increasing with decreasing temperature for both the cases.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[245.0, 3, 'sites', 4],[209.0, 4.0, 'K', 3],[165.0, 5, 'K', 2]

N
###Magnetic frustration and paramagnetic state transport anomalies in Ho4RhAl and Er4RhAl: Possible test cases for newly identified roles of itinerant electrons|Ram Kumar,E. V. Sampathkumaran###
(480249, 480249)
 This findingestablishes that these compounds belong to a select group of intermetallics inwhich spin-disorder contribution apparently increases gradually as oneapproaches respective T<missing VAR>N with decreasing temperature.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[351.0, 3, 'sites', 5],[315.0, 4.0, 'K', 4],[271.0, 5, 'K', 3]

N
###Magnetic frustration and paramagnetic state transport anomalies in Ho4RhAl and Er4RhAl: Possible test cases for newly identified roles of itinerant electrons|Ram Kumar,E. V. Sampathkumaran###
(480290, 480290)
 This could be anexperimental signature for the effect due to classical spin-liquid above T<missing VAR>N.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[392.0, 3, 'sites', 6],[356.0, 4.0, 'K', 5],[312.0, 5, 'K', 4]

In
###Magnetic frustration and paramagnetic state transport anomalies in Ho4RhAl and Er4RhAl: Possible test cases for newly identified roles of itinerant electrons|Ram Kumar,E. V. Sampathkumaran###
(480294, 480294)
In view of these properties analogous to those of Gd2PdSi3, it is of interestto investigate these 411 compounds further to understand possibleunconventional roles of itinerant electrons, not only in the magneticallyordered state but also in the paramagnetic state, predicted by some theories inrecent years for which this Gd compound is considered to be a classicexample.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[396.0, 3, 'sites', 7],[360.0, 4.0, 'K', 6],[316.0, 5, 'K', 5]

Gd2PdSi3
###Magnetic frustration and paramagnetic state transport anomalies in Ho4RhAl and Er4RhAl: Possible test cases for newly identified roles of itinerant electrons|Ram Kumar,E. V. Sampathkumaran###
(480312, 480316)
In view of these properties analogous to those of Gd2PdSi3, it is of interestto investigate these 411 compounds further to understand possibleunconventional roles of itinerant electrons, not only in the magneticallyordered state but also in the paramagnetic state, predicted by some theories inrecent years for which this Gd compound is considered to be a classicexample.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[414.0, 3, 'sites', 7],[378.0, 4.0, 'K', 6],[334.0, 5, 'K', 5]

Gd
###Magnetic frustration and paramagnetic state transport anomalies in Ho4RhAl and Er4RhAl: Possible test cases for newly identified roles of itinerant electrons|Ram Kumar,E. V. Sampathkumaran###
(480409, 480409)
In view of these properties analogous to those of Gd2PdSi3, it is of interestto investigate these 411 compounds further to understand possibleunconventional roles of itinerant electrons, not only in the magneticallyordered state but also in the paramagnetic state, predicted by some theories inrecent years for which this Gd compound is considered to be a classicexample.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[511.0, 3, 'sites', 7],[475.0, 4.0, 'K', 6],[431.0, 5, 'K', 5]

S
###Transport Properties of the Kondo Lattice Model in the Limit $S=\infty$ and $D=\infty$|Nobuo Furukawa###
(480483, 480483)
Transport Properties of the Kondo Lattice Model in the Limit Sinfty and D<missing VAR>infty.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 3, 'd', 1]

La1-xSr
###Transport Properties of the Kondo Lattice Model in the Limit $S=\infty$ and $D=\infty$|Nobuo Furukawa###
(480540, 480544)
 The Kondo lattice model with Hunds<missing VAR> ferromagnetic spin coupling isinvestigated as a microscopic model of the perovskite-type 3d transition-metaloxide La1-xSrx<missing VAR>MnO3.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[9.0, 3, 'd', 0]

MnO3
###Transport Properties of the Kondo Lattice Model in the Limit $S=\infty$ and $D=\infty$|Nobuo Furukawa###
(480546, 480548)
 The Kondo lattice model with Hunds<missing VAR> ferromagnetic spin coupling isinvestigated as a microscopic model of the perovskite-type 3d transition-metaloxide La1-xSrx<missing VAR>MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 3, 'd', 0]

In
###Transport Properties of the Kondo Lattice Model in the Limit $S=\infty$ and $D=\infty$|Nobuo Furukawa###
(480551, 480551)
 In the classical spin limit Sinfty and theinfinite-dimensional limit D<missing VAR>infty, the one-body Greens<missing VAR> function iscalculated exactly.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 3, 'd', 1]

S
###Transport Properties of the Kondo Lattice Model in the Limit $S=\infty$ and $D=\infty$|Nobuo Furukawa###
(480561, 480561)
 In the classical spin limit Sinfty and theinfinite-dimensional limit D<missing VAR>infty, the one-body Greens<missing VAR> function iscalculated exactly.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 3, 'd', 1]

La1-xSr
###Transport Properties of the Kondo Lattice Model in the Limit $S=\infty$ and $D=\infty$|Nobuo Furukawa###
(480663, 480667)
 The giant magnetoresistance of this model,which is in a good agreement with the experimental data ofLa1-xSrx<missing VAR>MnO3, is explained by the spin disorder scattering process.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[132.0, 3, 'd', 3]

MnO3
###Transport Properties of the Kondo Lattice Model in the Limit $S=\infty$ and $D=\infty$|Nobuo Furukawa###
(480669, 480671)
 The giant magnetoresistance of this model,which is in a good agreement with the experimental data ofLa1-xSrx<missing VAR>MnO3, is explained by the spin disorder scattering process.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 3, 'd', 3]

YBa2Cu3O7
###The Anomalous Hall Effect in YBa$_2$Cu$_3$O$_7$|Branko P. Stojkovic,David Pines###
(480709, 480715)
The Anomalous Hall Effect in YBa2Cu3O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5384615384615384,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23076923076923078,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15384615384615385,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YBa2Cu3O7
###The Anomalous Hall Effect in YBa$_2$Cu$_3$O$_7$|Branko P. Stojkovic,David Pines###
(480743, 480749)
 The temperature dependence of the normal state Hall effect andmagnetoresistance in YBa2Cu3O7 is investigated using the NearlyAntiferromagnetic Fermi Liquid description of planar quasiparticles.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5384615384615384,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23076923076923078,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15384615384615385,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnO3
###Magnetic and Transport Properties of the Kondo Lattice Model with Ferromagnetic Exchange Coupling|Nobuo Furukawa###
(481019, 481021)
 The Kondo lattice model with Hunds<missing VAR> ferromagnetic spin coupling isinvestigated as a microscopic model of the perovskite-type 3d<missing VAR> manganese oxide(R<missing VAR>,A)MnO3 where R<missing VAR> and A are rare earth element and alkaline earthelement, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Magnetic and Transport Properties of the Kondo Lattice Model with Ferromagnetic Exchange Coupling|Nobuo Furukawa###
(481064, 481064)
 We take the classical spin limit Sinfty for thesimplicity of the calculation, since the quantum exchange process seems to beirrelevant in the high temperature paramagnetic phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magnetic and Transport Properties of the Kondo Lattice Model with Ferromagnetic Exchange Coupling|Nobuo Furukawa###
(481133, 481133)
 In the hole doped systems,ferromagnetic instabilities are observed as the temperature is lowered.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La
###Magnetic and Transport Properties of the Kondo Lattice Model with Ferromagnetic Exchange Coupling|Nobuo Furukawa###
(481197, 481197)
 Thegiant magnetoresistance of this model is in excellent agreement with theexperimental data of (La,Sr)MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr
###Magnetic and Transport Properties of the Kondo Lattice Model with Ferromagnetic Exchange Coupling|Nobuo Furukawa###
(481199, 481199)
 Thegiant magnetoresistance of this model is in excellent agreement with theexperimental data of (La,Sr)MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnO3
###Magnetic and Transport Properties of the Kondo Lattice Model with Ferromagnetic Exchange Coupling|Nobuo Furukawa###
(481201, 481203)
 Thegiant magnetoresistance of this model is in excellent agreement with theexperimental data of (La,Sr)MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Double Degeneracy and Jahn-Teller Effects in CMR Perovskites|Jun Zang,A. R. Bishop,H. Roder###
(481228, 481228)
Double Degeneracy and Jahn-Teller Effects in CMR Perovskites.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La1-x
###Double Degeneracy and Jahn-Teller Effects in CMR Perovskites|Jun Zang,A. R. Bishop,H. Roder###
(481265, 481268)
 Jahn-Teller (JT) electron-phonon coupling effects in the colossalmagnetoresistance perovskite compounds La1-xAx<missing VAR>MnO3 are investigated.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

MnO3
###Double Degeneracy and Jahn-Teller Effects in CMR Perovskites|Jun Zang,A. R. Bishop,H. Roder###
(481271, 481273)
 Jahn-Teller (JT) electron-phonon coupling effects in the colossalmagnetoresistance perovskite compounds La1-xAx<missing VAR>MnO3 are investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Double Degeneracy and Jahn-Teller Effects in CMR Perovskites|Jun Zang,A. R. Bishop,H. Roder###
(481293, 481293)
Electron-electron correlations between two degenerate Mn eg orbitals arestudied in the Gutzwiller approximation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/Cr
###Theory on the Temperature Dependence of Giant Magnetoresistance|Hideo Hasegawa###
(481656, 481658)
 Our model calculations wellexplain the observed features of the parallel and perpendicular GMR of Fe/Crand Co/Cu multilayers recently reported by Gijs it et al.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Co/Cu
###Theory on the Temperature Dependence of Giant Magnetoresistance|Hideo Hasegawa###
(481663, 481665)
 Our model calculations wellexplain the observed features of the parallel and perpendicular GMR of Fe/Crand Co/Cu multilayers recently reported by Gijs it et al.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

II
###On the Fermi Liquid to Polaron Crossover II: Double Exchange and the Physics of "Colossal" Magnetoresistance|A. J. Millis,R. Mueller,Boris I. Shraiman###
(481920, 481921)
On the Fermi Liquid to Polaron Crossover II Double Exchange and the Physics of Colossal Magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Re1-x
###On the Fermi Liquid to Polaron Crossover II: Double Exchange and the Physics of "Colossal" Magnetoresistance|A. J. Millis,R. Mueller,Boris I. Shraiman###
(482022, 482025)
 We use the dynamical mean field method to study a model of electronsJahn-Teller coupled to localized classical oscillators and ferromagneticallycoupled to core spins, which, we argue, contains the essential physics ofthe colossal magnetoresistance manganites Re1-x Ax<missing VAR> MnO3.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

MnO3
###On the Fermi Liquid to Polaron Crossover II: Double Exchange and the Physics of "Colossal" Magnetoresistance|A. J. Millis,R. Mueller,Boris I. Shraiman###
(482030, 482032)
 We use the dynamical mean field method to study a model of electronsJahn-Teller coupled to localized classical oscillators and ferromagneticallycoupled to core spins, which, we argue, contains the essential physics ofthe colossal magnetoresistance manganites Re1-x Ax<missing VAR> MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###On the Fermi Liquid to Polaron Crossover II: Double Exchange and the Physics of "Colossal" Magnetoresistance|A. J. Millis,R. Mueller,Boris I. Shraiman###
(482183, 482183)
 Extensive use is made of results from a companionpaper titled On the Fermi Liquid to Polaron Crossover I General Results.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La1-x
###Unconventional Ferromagnetic Transition in La1-xCaxMnO3|J. W. Lynn,R. W. Erwin,J. A. Borchers,Q. Huang,A. Santoro,J-L. Peng,Z. Y. Li###
(482206, 482209)
Unconventional Ferromagnetic Transition in La1-xCaxMnO3.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[59.0, 0, '<', 1]

MnO3
###Unconventional Ferromagnetic Transition in La1-xCaxMnO3|J. W. Lynn,R. W. Erwin,J. A. Borchers,Q. Huang,A. Santoro,J-L. Peng,Z. Y. Li###
(482211, 482213)
Unconventional Ferromagnetic Transition in La1-xCaxMnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 0, '<', 1]

La1-x
###Unconventional Ferromagnetic Transition in La1-xCaxMnO3|J. W. Lynn,R. W. Erwin,J. A. Borchers,Q. Huang,A. Santoro,J-L. Peng,Z. Y. Li###
(482249, 482252)
 Neutron scattering has been used to study the magnetic correlations and longwavelength spin dynamics of La1-xCaxMnO3 in the ferromagnetic regime(0<x<missing VAR><1/2).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[16.0, 0, '<', 0]

MnO3
###Unconventional Ferromagnetic Transition in La1-xCaxMnO3|J. W. Lynn,R. W. Erwin,J. A. Borchers,Q. Huang,A. Santoro,J-L. Peng,Z. Y. Li###
(482254, 482256)
 Neutron scattering has been used to study the magnetic correlations and longwavelength spin dynamics of La1-xCaxMnO3 in the ferromagnetic regime(0<x<missing VAR><1/2).
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 0, '<', 0]

(Tc250K)
###Unconventional Ferromagnetic Transition in La1-xCaxMnO3|J. W. Lynn,R. W. Erwin,J. A. Borchers,Q. Huang,A. Santoro,J-L. Peng,Z. Y. Li###
(482285, 482289)
 For x<missing VAR>1/3 (Tc250K) where the magnetoresistance effects are largestthe system behaves as an ideal isotropic ferromagnet at low T<missing VAR>, with a gapless(<0.04meV) dispersion relation E<missing VAR>Dq2 and D(T0)170 meV-A-1.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.00398406374501992,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.9960159362549801,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 0, '<', 1]

V
###Unconventional Ferromagnetic Transition in La1-xCaxMnO3|J. W. Lynn,R. W. Erwin,J. A. Borchers,Q. Huang,A. Santoro,J-L. Peng,Z. Y. Li###
(482338, 482338)
 For x<missing VAR>1/3 (Tc250K) where the magnetoresistance effects are largestthe system behaves as an ideal isotropic ferromagnet at low T<missing VAR>, with a gapless(<0.04meV) dispersion relation E<missing VAR>Dq2 and D(T0)170 meV-A-1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 0, '<', 1]

V
###Unconventional Ferromagnetic Transition in La1-xCaxMnO3|J. W. Lynn,R. W. Erwin,J. A. Borchers,Q. Huang,A. Santoro,J-L. Peng,Z. Y. Li###
(482359, 482359)
 For x<missing VAR>1/3 (Tc250K) where the magnetoresistance effects are largestthe system behaves as an ideal isotropic ferromagnet at low T<missing VAR>, with a gapless(<0.04meV) dispersion relation E<missing VAR>Dq2 and D(T0)170 meV-A-1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 0, '<', 1]

K
###Unconventional Ferromagnetic Transition in La1-xCaxMnO3|J. W. Lynn,R. W. Erwin,J. A. Borchers,Q. Huang,A. Santoro,J-L. Peng,Z. Y. Li###
(482389, 482389)
 However, ananomalous strongly-field-dependent diffusive component develops above 200K anddominates the fluctuation spectrum as T<missing VAR> approaches Tc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 0, '<', 2]

Tc
###Unconventional Ferromagnetic Transition in La1-xCaxMnO3|J. W. Lynn,R. W. Erwin,J. A. Borchers,Q. Huang,A. Santoro,J-L. Peng,Z. Y. Li###
(482408, 482408)
 However, ananomalous strongly-field-dependent diffusive component develops above 200K anddominates the fluctuation spectrum as T<missing VAR> approaches Tc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 0, '<', 2]

(N)
###Resistive transport in a mesoscopic proximity superconductor|P. Charlat,H. Courtois,Ph. Gandit,D. Mailly,A. F. Volkov,B. Pannetier###
(482709, 482711)
 We review transport measurements in a normal metal (N) in contact with one ortwo superconducting (S) islands.
Featurization successful!
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[190.0, 2, ',', 4]

(S)
###Resistive transport in a mesoscopic proximity superconductor|P. Charlat,H. Courtois,Ph. Gandit,D. Mailly,A. F. Volkov,B. Pannetier###
(482728, 482730)
 We review transport measurements in a normal metal (N) in contact with one ortwo superconducting (S) islands.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[171.0, 2, ',', 4]

In
###Resistive transport in a mesoscopic proximity superconductor|P. Charlat,H. Courtois,Ph. Gandit,D. Mailly,A. F. Volkov,B. Pannetier###
(482769, 482769)
 In aloop-shaped N conductor, we observe large h<missing VAR>/2e<missing VAR>-periodic magnetoresistanceoscillations that decay with temperature T<missing VAR> with a 1/T<missing VAR> power-law.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 2, ',', 2]

N
###Resistive transport in a mesoscopic proximity superconductor|P. Charlat,H. Courtois,Ph. Gandit,D. Mailly,A. F. Volkov,B. Pannetier###
(482778, 482778)
 In aloop-shaped N conductor, we observe large h<missing VAR>/2e<missing VAR>-periodic magnetoresistanceoscillations that decay with temperature T<missing VAR> with a 1/T<missing VAR> power-law.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 2, ',', 2]

S
###Resistive transport in a mesoscopic proximity superconductor|P. Charlat,H. Courtois,Ph. Gandit,D. Mailly,A. F. Volkov,B. Pannetier###
(482872, 482872)
 This behaviouris the signature of the long-range coherence of the low-energy electron pairsinduced by the Andreev reflection at the S interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 2, ',', 1]

At
###Resistive transport in a mesoscopic proximity superconductor|P. Charlat,H. Courtois,Ph. Gandit,D. Mailly,A. F. Volkov,B. Pannetier###
(482877, 482877)
 At temperature andvoltage below the Thouless energy hbar D<missing VAR> / L<missing VAR>2, we observe the re-entranceof the metallic resistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 2, ',', 0]

Tl2Mn2O7
###Intermediate Valence Model for Tl_{2}Mn_{2}O_{7}|C. I. Ventura,B. R. Alascio###
(483178, 483183)
Intermediate Valence Model for Tl2Mn2O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6363636363636364,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tm
###Intermediate Valence Model for Tl_{2}Mn_{2}O_{7}|C. I. Ventura,B. R. Alascio###
(483342, 483342)
 The model has been previously employed tounderstand transport and thermodynamical properties of intermediate valence Tmcompounds and, in its periodic version, to analize the phase diagram.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tl2Mn2O7
###Intermediate Valence Model for Tl_{2}Mn_{2}O_{7}|C. I. Ventura,B. R. Alascio###
(483394, 483399)
 Theresults obtained with this model for the transport properties ofTl2Mn2O7 are in good qualitative agreement with the experimentalresults.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6363636363636364,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Au80Co20
###Evidence for Kondo Effect in Au80Co20 Ribbons|D. S. Geoghegan,A. Huetten,K. -H. Mueller,L. Schultz###
(483439, 483442)
Evidence for Kondo Effect in Au80Co20 Ribbons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 20, 'm', 1],[70.0, 25, 'K', 1],[105.0, 60, 'm', 2],[108.0, -1, ',', 2]

Au80Co20
###Evidence for Kondo Effect in Au80Co20 Ribbons|D. S. Geoghegan,A. Huetten,K. -H. Mueller,L. Schultz###
(483474, 483477)
 A minimum in resistivity as a function of temperature for an as-quenchedAu80Co20 ribbon prepared by melt-spinning using a wheel surface speed of 20 ms<missing VAR>-1 is found at 25 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 20, 'm', 0],[35.0, 25, 'K', 0],[70.0, 60, 'm', 1],[73.0, -1, ',', 1]

No
###Evidence for Kondo Effect in Au80Co20 Ribbons|D. S. Geoghegan,A. Huetten,K. -H. Mueller,L. Schultz###
(483515, 483515)
 No resistivity minimum is found for an as-quenchedribbon using a wheel surface speed of 60 m s<missing VAR>-1, however, upon heat treatmentof this ribbon a resistivity minimum is recovered.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0
[15.0, 20, 'm', 1],[3.0, 25, 'K', 1],[32.0, 60, 'm', 0],[35.0, -1, ',', 0]

At
###Magnetoresistance of composite fermions at ν=1/2|L. P. Rokhinson,V. J. Goldman###
(483764, 483764)
 At the same time, no measurable corrections to the Hallresistivity has been found.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La2-xSr
###Magnetic-Field Induced Localization in the Normal State of Superconducting La_2-xSr_xCuo_4|A. Malinowski,Marta Z. Cieplak,A. S. van Steenbergen,J. A. A. J. Perenboom,K. Karpinska,M. Berkowski,S. Guha,P. Lindenfeld###
(483919, 483923)
Magnetic-Field Induced Localization in the Normal State of Superconducting La2-xSrx<missing VAR>Cuo4.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[43.0, 0.048, ',', 1],[60.0, 20, 'T', 1],[71.0, 40, 'mK', 1]

La2-xSr
###Magnetic-Field Induced Localization in the Normal State of Superconducting La_2-xSr_xCuo_4|A. Malinowski,Marta Z. Cieplak,A. S. van Steenbergen,J. A. A. J. Perenboom,K. Karpinska,M. Berkowski,S. Guha,P. Lindenfeld###
(483942, 483946)
 Magnetoresistance measurements of highly underdoped superconductingLa2-xSrx<missing VAR>CuO4 films with x<missing VAR>  0.051 and x<missing VAR>  0.048, performed in dcmagnetic fields up to 20 T and at temperatures down to 40 mK, reveal amagnetic-field induced transition from weak to strong localization in thenormal state.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[20.0, 0.048, ',', 0],[37.0, 20, 'T', 0],[48.0, 40, 'mK', 0]

CuO4
###Magnetic-Field Induced Localization in the Normal State of Superconducting La_2-xSr_xCuo_4|A. Malinowski,Marta Z. Cieplak,A. S. van Steenbergen,J. A. A. J. Perenboom,K. Karpinska,M. Berkowski,S. Guha,P. Lindenfeld###
(483948, 483950)
 Magnetoresistance measurements of highly underdoped superconductingLa2-xSrx<missing VAR>CuO4 films with x<missing VAR>  0.051 and x<missing VAR>  0.048, performed in dcmagnetic fields up to 20 T and at temperatures down to 40 mK, reveal amagnetic-field induced transition from weak to strong localization in thenormal state.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 0.048, ',', 0],[33.0, 20, 'T', 0],[44.0, 40, 'mK', 0]

CuO2
###Magnetic-Field Induced Localization in the Normal State of Superconducting La_2-xSr_xCuo_4|A. Malinowski,Marta Z. Cieplak,A. S. van Steenbergen,J. A. A. J. Perenboom,K. Karpinska,M. Berkowski,S. Guha,P. Lindenfeld###
(484040, 484042)
 The normal-state conductances per CuO2--plane, measured atdifferent fields in a single specimen, are found to collapse to one curve withthe use of a single scaling parameter that is inversely proportional to thelocalization length.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 0.048, ',', 1],[57.0, 20, 'T', 1],[46.0, 40, 'mK', 1]

MnO3
###Anomalous Shift of Chemical Potential in the Double-Exchange Systems|Nobuo Furukawa###
(484348, 484350)
 Measurementof the shift of the chemical potential casts a constraint to theoreticalapproaches for the magnetoresistance phenomena in (R<missing VAR>,A)MnO3 such asdouble-exchange effects and dynamic Jahn-Teller effects.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Instability of the Two-Dimensional Metallic Phase to Parallel Magnetic Field|V. M. Pudalov,G. Brunthaler,A. Prinz,G. Bauer###
(484460, 484460)
 We report on magnetotransport studies of the unusual two-dimensional metallicphase in high mobility Si-M<missing VAR>OS structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 2, 'D', 1],[60.0, 30, 'times', 1]

OS
###Instability of the Two-Dimensional Metallic Phase to Parallel Magnetic Field|V. M. Pudalov,G. Brunthaler,A. Prinz,G. Bauer###
(484463, 484464)
 We report on magnetotransport studies of the unusual two-dimensional metallicphase in high mobility Si-M<missing VAR>OS structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 2, 'D', 1],[56.0, 30, 'times', 1]

B
###h/2e oscillations and quantum chaos in ballistic Aharonov-Bohm billiards|Shiro Kawabata,Katsuhiro Nakamura###
(484697, 484697)
 We study the quantum interference effect for the single ballisticAharonov-Bohm billiard in the presence of a weak magnetic field B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###h/2e oscillations and quantum chaos in ballistic Aharonov-Bohm billiards|Shiro Kawabata,Katsuhiro Nakamura###
(484748, 484748)
 In addition to theappearance of h<missing VAR>/2e<missing VAR> oscillation that are caused by interference betweentime-reversed coherent backscattering classical trajectories, B in theconducting region leads to negative magnetoresistance and dampening of the h<missing VAR>/2e<missing VAR>oscillation amplitude.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###h/2e oscillations and quantum chaos in ballistic Aharonov-Bohm billiards|Shiro Kawabata,Katsuhiro Nakamura###
(484794, 484794)
 In addition to theappearance of h<missing VAR>/2e<missing VAR> oscillation that are caused by interference betweentime-reversed coherent backscattering classical trajectories, B in theconducting region leads to negative magnetoresistance and dampening of the h<missing VAR>/2e<missing VAR>oscillation amplitude.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###h/2e oscillations and quantum chaos in ballistic Aharonov-Bohm billiards|Shiro Kawabata,Katsuhiro Nakamura###
(484834, 484834)
 The B dependence of the results reflects the underlyingclassical (chaotic and regular) dynamics.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magnetoresistance of a two-dimensional electron gas with spatially periodic lateral modulations: Exact consequences of Boltzmann's equation|Rolf Menne,Rolf R. Gerhardts###
(484968, 484968)
 In addition to superlatticesdefined by static electric and magnetic fields, we consider mobilitysuperlattices describing a spatially modulated density of scattering centers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tl
###High field study of normal state magneto-transport in the thallium cuprate Tl-2201|A. W. Tyler,Yoichi Ando,F. F. Balakirev,A. Passner,G. S. Boebinger,A. J. Schofield,A. P. Mackenzie,O. Laborde###
(485189, 485189)
High field study of normal state magneto-transport in the thallium cuprate Tl-2201.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 60, 'T', 1],[86.0, 60, 'T', 2],[101.0, 30, 'K', 2]

Tl
###High field study of normal state magneto-transport in the thallium cuprate Tl-2201|A. W. Tyler,Yoichi Ando,F. F. Balakirev,A. Passner,G. S. Boebinger,A. J. Schofield,A. P. Mackenzie,O. Laborde###
(485223, 485223)
 We present a study of in-plane normal state magneto-transport in singlecrystal Tl-2201 in 60T pulsed magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 60, 'T', 0],[52.0, 60, 'T', 1],[67.0, 30, 'K', 1]

In
###High field study of normal state magneto-transport in the thallium cuprate Tl-2201|A. W. Tyler,Yoichi Ando,F. F. Balakirev,A. Passner,G. S. Boebinger,A. J. Schofield,A. P. Mackenzie,O. Laborde###
(485237, 485237)
 In optimally doped samples (Tc 80K) the weak-magnetic-field regime extends to fields as high as 60T, but inoverdoped samples (Tc  30K) we are able to leave the weak field regime, asshown by the behavior of both the magnetoresistance and the Hall resistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 60, 'T', 1],[38.0, 60, 'T', 0],[53.0, 30, 'K', 0]

Tc
###High field study of normal state magneto-transport in the thallium cuprate Tl-2201|A. W. Tyler,Yoichi Ando,F. F. Balakirev,A. Passner,G. S. Boebinger,A. J. Schofield,A. P. Mackenzie,O. Laborde###
(485246, 485246)
 In optimally doped samples (Tc 80K) the weak-magnetic-field regime extends to fields as high as 60T, but inoverdoped samples (Tc  30K) we are able to leave the weak field regime, asshown by the behavior of both the magnetoresistance and the Hall resistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 60, 'T', 1],[29.0, 60, 'T', 0],[44.0, 30, 'K', 0]

K
###High field study of normal state magneto-transport in the thallium cuprate Tl-2201|A. W. Tyler,Yoichi Ando,F. F. Balakirev,A. Passner,G. S. Boebinger,A. J. Schofield,A. P. Mackenzie,O. Laborde###
(485251, 485251)
 In optimally doped samples (Tc 80K) the weak-magnetic-field regime extends to fields as high as 60T, but inoverdoped samples (Tc  30K) we are able to leave the weak field regime, asshown by the behavior of both the magnetoresistance and the Hall resistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 60, 'T', 1],[24.0, 60, 'T', 0],[39.0, 30, 'K', 0]

Tc
###High field study of normal state magneto-transport in the thallium cuprate Tl-2201|A. W. Tyler,Yoichi Ando,F. F. Balakirev,A. Passner,G. S. Boebinger,A. J. Schofield,A. P. Mackenzie,O. Laborde###
(485288, 485288)
 In optimally doped samples (Tc 80K) the weak-magnetic-field regime extends to fields as high as 60T, but inoverdoped samples (Tc  30K) we are able to leave the weak field regime, asshown by the behavior of both the magnetoresistance and the Hall resistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 60, 'T', 1],[13.0, 60, 'T', 0],[2.0, 30, 'K', 0]

In
###Suppression of the Coulomb interaction contribution to the conductance by a parallel magnetic field|S. G. den Hartog,S. J. van der Molen,B. J. van Wees,T. M. Klapwijk,G. Borghs###
(485526, 485526)
 Incontrast to theoretical predictions, d<missing VAR>Geei is suppressed by a parallel magneticfield.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Magnetotransport in Cuprates: a Test of the Spin Fluctuation Model|Branko Stojkovic,David Pines###
(485740, 485740)
 We find that the model explains all important features seenexperimentally the violation of Kohlers<missing VAR> rule, the close relationship betweenthe Hall angle and the magnetoresistance, the temperature dependence of thefirst high field correction to MR and the doping dependence of the low field MRdata.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magnetotransport in Cuprates: a Test of the Spin Fluctuation Model|Branko Stojkovic,David Pines###
(485816, 485816)
 In addition, the estimated values of omegac<missing VAR> tau, calculated usingparameters obtained from the NMR measurements, yield values in close agreementwith those found experimentally for overdoped and optimally doped cuprates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Magnetotransport in Cuprates: a Test of the Spin Fluctuation Model|Branko Stojkovic,David Pines###
(485848, 485848)
 In addition, the estimated values of omegac<missing VAR> tau, calculated usingparameters obtained from the NMR measurements, yield values in close agreementwith those found experimentally for overdoped and optimally doped cuprates.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La1.2Sr1.8Mn2O7
###Neutron scattering investigation of magnetic bilayer correlations in $La_{1.2}Sr_{1.8}Mn_2O_7$|R. Osborn,S. Rosenkranz,D. N. Argyriou,L. Vasiliu-Doloc,J. W. Lynn,S. K. Sinha,J. F. Mitchell,K. E. Gray,S. D. Bader###
(485911, 485918)
Neutron scattering investigation of magnetic bilayer correlations in La1.2Sr1.8Mn2O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.09999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 112, 'K', 1]

La1.2Sr1.8Mn2O7
###Neutron scattering investigation of magnetic bilayer correlations in $La_{1.2}Sr_{1.8}Mn_2O_7$|R. Osborn,S. Rosenkranz,D. N. Argyriou,L. Vasiliu-Doloc,J. W. Lynn,S. K. Sinha,J. F. Mitchell,K. E. Gray,S. D. Bader###
(485944, 485951)
 Neutron scattering investigations of the paramagnetic correlations in thelayered manganite La1.2Sr1.8Mn2O7, which exhibits colossalmagnetoresistance above the Curie transition at T<missing VAR>C  112 K, show that spinsin neighboring layers within each bilayer are strongly canted at an averageangle that is dependent on both the magnetic field and temperature, aspredicted by de Gennes.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.09999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 112, 'K', 0]

C
###Neutron scattering investigation of magnetic bilayer correlations in $La_{1.2}Sr_{1.8}Mn_2O_7$|R. Osborn,S. Rosenkranz,D. N. Argyriou,L. Vasiliu-Doloc,J. W. Lynn,S. K. Sinha,J. F. Mitchell,K. E. Gray,S. D. Bader###
(485974, 485974)
 Neutron scattering investigations of the paramagnetic correlations in thelayered manganite La1.2Sr1.8Mn2O7, which exhibits colossalmagnetoresistance above the Curie transition at T<missing VAR>C  112 K, show that spinsin neighboring layers within each bilayer are strongly canted at an averageangle that is dependent on both the magnetic field and temperature, aspredicted by de Gennes.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 112, 'K', 0]

C
###Neutron scattering investigation of magnetic bilayer correlations in $La_{1.2}Sr_{1.8}Mn_2O_7$|R. Osborn,S. Rosenkranz,D. N. Argyriou,L. Vasiliu-Doloc,J. W. Lynn,S. K. Sinha,J. F. Mitchell,K. E. Gray,S. D. Bader###
(486066, 486066)
 The in-plane correlation length does not diverge atT<missing VAR>C, although the magnetic Bragg intensity obeys critical scaling belowT<missing VAR>C, with the same temperature dependence as the zero-field electricalconductance.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 112, 'K', 1]

C
###Neutron scattering investigation of magnetic bilayer correlations in $La_{1.2}Sr_{1.8}Mn_2O_7$|R. Osborn,S. Rosenkranz,D. N. Argyriou,L. Vasiliu-Doloc,J. W. Lynn,S. K. Sinha,J. F. Mitchell,K. E. Gray,S. D. Bader###
(486089, 486089)
 The in-plane correlation length does not diverge atT<missing VAR>C, although the magnetic Bragg intensity obeys critical scaling belowT<missing VAR>C, with the same temperature dependence as the zero-field electricalconductance.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 112, 'K', 1]

Fe
###Negative Domain Wall Contribution to the Resistivity of Microfabricated Fe Wires|U. Ruediger,J. Yu,S. Zhang,A. D. Kent,S. S. P. Parkin###
(486142, 486142)
Negative Domain Wall Contribution to the Resistivity of Microfabricated Fe Wires.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Negative Domain Wall Contribution to the Resistivity of Microfabricated Fe Wires|U. Ruediger,J. Yu,S. Zhang,A. D. Kent,S. S. P. Parkin###
(486174, 486174)
 The effect of domain walls on electron transport has been investigated inmicrofabricated Fe wires (0.65 to 20 mu m<missing VAR> linewidths) with controlled stripedomains.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Anomalous Hall Effect in Double Exchange Magnets|Yong Baek Kim,Pinaki Majumdar,A. J. Millis,Boris I. Shraiman###
(486406, 486406)
 We investigate the possible origin of anomalous Hall effect in the CMR(colossal magnetoresistance) materials - the doped rare earth manganites -observed recently by Matl et al.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La
###Temperature- and Bias-dependence of magnetoresistance in doped manganite thin film trilayer junctions|J. Z. Sun,D. W. Abraham,K. Roche,S. S. P. Parkin###
(487106, 487106)
 Thin film trilayer junction of La%0.67Sr0.33MnO3 - SrTiO3 -La0.67Sr0.33MnO3 shows a factor of 9.7 change in resistance, in amagnetic field around 100 Oe at 14K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 9.7, 'change', 0],[51.0, 100, 'Oe', 0],[54.0, 14, 'K', 0]

Sr0.33MnO3
###Temperature- and Bias-dependence of magnetoresistance in doped manganite thin film trilayer junctions|J. Z. Sun,D. W. Abraham,K. Roche,S. S. P. Parkin###
(487109, 487113)
 Thin film trilayer junction of La%0.67Sr0.33MnO3 - SrTiO3 -La0.67Sr0.33MnO3 shows a factor of 9.7 change in resistance, in amagnetic field around 100 Oe at 14K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6928406466512702,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23094688221709006,0,0,0,0,0,0,0,0,0,0,0,0,0.07621247113163973,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 9.7, 'change', 0],[44.0, 100, 'Oe', 0],[47.0, 14, 'K', 0]

SrTiO3
###Temperature- and Bias-dependence of magnetoresistance in doped manganite thin film trilayer junctions|J. Z. Sun,D. W. Abraham,K. Roche,S. S. P. Parkin###
(487117, 487120)
 Thin film trilayer junction of La%0.67Sr0.33MnO3 - SrTiO3 -La0.67Sr0.33MnO3 shows a factor of 9.7 change in resistance, in amagnetic field around 100 Oe at 14K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 9.7, 'change', 0],[37.0, 100, 'Oe', 0],[40.0, 14, 'K', 0]

La0.67Sr0.33MnO3
###Temperature- and Bias-dependence of magnetoresistance in doped manganite thin film trilayer junctions|J. Z. Sun,D. W. Abraham,K. Roche,S. S. P. Parkin###
(487125, 487131)
 Thin film trilayer junction of La%0.67Sr0.33MnO3 - SrTiO3 -La0.67Sr0.33MnO3 shows a factor of 9.7 change in resistance, in amagnetic field around 100 Oe at 14K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.066,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.134,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 9.7, 'change', 0],[26.0, 100, 'Oe', 0],[29.0, 14, 'K', 0]

La0.67Sr0.33MnO
###Thin-Film Trilayer Manganate Junctions|Jonathan Z. Sun###
(487341, 487346)
 The junction is a La0.67Sr0.33MnO3%-SrTiO3-La0.67 Sr0.33MnO3 trilayer device supportingcurrent-perpendicular transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.11,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.22333333333333336,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[1.0, 3, '%', 0],[66.0, 4.2, 'K', 1],[86.0, 100, 'Oe', 1]

SrTiO3
###Thin-Film Trilayer Manganate Junctions|Jonathan Z. Sun###
(487352, 487355)
 The junction is a La0.67Sr0.33MnO3%-SrTiO3-La0.67 Sr0.33MnO3 trilayer device supportingcurrent-perpendicular transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 3, '%', 0],[57.0, 4.2, 'K', 1],[77.0, 100, 'Oe', 1]

La0.67
###Thin-Film Trilayer Manganate Junctions|Jonathan Z. Sun###
(487357, 487358)
 The junction is a La0.67Sr0.33MnO3%-SrTiO3-La0.67 Sr0.33MnO3 trilayer device supportingcurrent-perpendicular transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 3, '%', 0],[54.0, 4.2, 'K', 1],[74.0, 100, 'Oe', 1]

Sr0.33MnO3
###Thin-Film Trilayer Manganate Junctions|Jonathan Z. Sun###
(487360, 487364)
 The junction is a La0.67Sr0.33MnO3%-SrTiO3-La0.67 Sr0.33MnO3 trilayer device supportingcurrent-perpendicular transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6928406466512702,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23094688221709006,0,0,0,0,0,0,0,0,0,0,0,0,0.07621247113163973,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 3, '%', 0],[48.0, 4.2, 'K', 1],[68.0, 100, 'Oe', 1]

InO
###Destruction of localized electron pairs above the magnetic-field-driven superconductor-insulator transition in amorphous InO films|V. F. Gantmakher,M. V. Golubkov,V. T. Dolgopolov,G. E. Tsydynzhapov,A. A. Shashkin###
(487514, 487515)
Destruction of localized electron pairs above the magnetic-field-driven superconductor-insulator transition in amorphous InO films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 30, 'mK', 1]

La
###Scaling relations in charge and spin excitations for (La,Sr)MnO3|Nobuo Furukawa,Yutaka Moritomo,K. Hirota,Y. Endoh###
(487760, 487760)
Scaling relations in charge and spin excitations for (La,Sr)MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr
###Scaling relations in charge and spin excitations for (La,Sr)MnO3|Nobuo Furukawa,Yutaka Moritomo,K. Hirota,Y. Endoh###
(487762, 487762)
Scaling relations in charge and spin excitations for (La,Sr)MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnO3
###Scaling relations in charge and spin excitations for (La,Sr)MnO3|Nobuo Furukawa,Yutaka Moritomo,K. Hirota,Y. Endoh###
(487764, 487766)
Scaling relations in charge and spin excitations for (La,Sr)MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La
###Scaling relations in charge and spin excitations for (La,Sr)MnO3|Nobuo Furukawa,Yutaka Moritomo,K. Hirota,Y. Endoh###
(487788, 487788)
 Scaling relations in the charge and spin excitations of (La,Sr)MnO3 arestudied from both theoretical and experimental points of view.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr
###Scaling relations in charge and spin excitations for (La,Sr)MnO3|Nobuo Furukawa,Yutaka Moritomo,K. Hirota,Y. Endoh###
(487790, 487790)
 Scaling relations in the charge and spin excitations of (La,Sr)MnO3 arestudied from both theoretical and experimental points of view.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnO3
###Scaling relations in charge and spin excitations for (La,Sr)MnO3|Nobuo Furukawa,Yutaka Moritomo,K. Hirota,Y. Endoh###
(487792, 487794)
 Scaling relations in the charge and spin excitations of (La,Sr)MnO3 arestudied from both theoretical and experimental points of view.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Scaling relations in charge and spin excitations for (La,Sr)MnO3|Nobuo Furukawa,Yutaka Moritomo,K. Hirota,Y. Endoh###
(487818, 487818)
 In theferromagnetic metal phase, we investigate optical conductivity and neutroninelastic scattering, and compare with a theoretical calculation based on thedynamical mean-field theory of the double-exchange hamiltonian.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La
###Scaling relations in charge and spin excitations for (La,Sr)MnO3|Nobuo Furukawa,Yutaka Moritomo,K. Hirota,Y. Endoh###
(487898, 487898)
 Spin and chargedynamics of (La,Sr)MnO3 exhibit typical behaviors of half metals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr
###Scaling relations in charge and spin excitations for (La,Sr)MnO3|Nobuo Furukawa,Yutaka Moritomo,K. Hirota,Y. Endoh###
(487900, 487900)
 Spin and chargedynamics of (La,Sr)MnO3 exhibit typical behaviors of half metals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnO3
###Scaling relations in charge and spin excitations for (La,Sr)MnO3|Nobuo Furukawa,Yutaka Moritomo,K. Hirota,Y. Endoh###
(487902, 487904)
 Spin and chargedynamics of (La,Sr)MnO3 exhibit typical behaviors of half metals.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Scaling relations in charge and spin excitations for (La,Sr)MnO3|Nobuo Furukawa,Yutaka Moritomo,K. Hirota,Y. Endoh###
(487919, 487919)
 In thesemanganite compounds with high Curie temperature, various behaviors in spin andcharge properties are explained by the double-exchange hamiltonian alone.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Comment on "Quantum Decoherence in Disordered Mesoscopic Systems"|I. L. Aleiner,B. L. Altshuler,M. E. Gershenson###
(488029, 488029)
 In a recent paper, Phys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 81, ',', 3]

As
###Comment on "Quantum Decoherence in Disordered Mesoscopic Systems"|I. L. Aleiner,B. L. Altshuler,M. E. Gershenson###
(488103, 488103)
 As a result, the dephasing rateremains finite at zero temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 81, ',', 1]

W
###Comment on "Quantum Decoherence in Disordered Mesoscopic Systems"|I. L. Aleiner,B. L. Altshuler,M. E. Gershenson###
(488203, 488203)
 We point out that the GZ results are incompatiblewith (i) conventional perturbation theory of the effects of interaction on weaklocalization (WL), and (ii) with the available experimental data.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 81, ',', 3]

La0.67Sr0.33MnO3
###Thickness dependent magnetotransport in ultra-thin manganite films|J. Z. Sun,D. W. Abraham,R. A. Rao,C. B. Eom###
(488566, 488572)
 To understand the near-interface magnetism in manganites, uniform, ultra-thinfilms of La0.67Sr0.33MnO3 were grown epitaxially on single crystal (001)LaAlO3 and (110) NdGaO3 substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.066,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.134,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaAlO3
###Thickness dependent magnetotransport in ultra-thin manganite films|J. Z. Sun,D. W. Abraham,R. A. Rao,C. B. Eom###
(488591, 488594)
 To understand the near-interface magnetism in manganites, uniform, ultra-thinfilms of La0.67Sr0.33MnO3 were grown epitaxially on single crystal (001)LaAlO3 and (110) NdGaO3 substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NdGaO3
###Thickness dependent magnetotransport in ultra-thin manganite films|J. Z. Sun,D. W. Abraham,R. A. Rao,C. B. Eom###
(488602, 488605)
 To understand the near-interface magnetism in manganites, uniform, ultra-thinfilms of La0.67Sr0.33MnO3 were grown epitaxially on single crystal (001)LaAlO3 and (110) NdGaO3 substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NdGaO3
###Thickness dependent magnetotransport in ultra-thin manganite films|J. Z. Sun,D. W. Abraham,R. A. Rao,C. B. Eom###
(488722, 488725)
 The total thickness ofthe dead layer is estimated to be sim 30 AA for films on NdGaO3 and sim50 AA for films on LaAlO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaAlO3
###Thickness dependent magnetotransport in ultra-thin manganite films|J. Z. Sun,D. W. Abraham,R. A. Rao,C. B. Eom###
(488743, 488746)
 The total thickness ofthe dead layer is estimated to be sim 30 AA for films on NdGaO3 and sim50 AA for films on LaAlO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LuNi2B2C
###Hall-effect in LuNi_2B_2C in normal and superconducting mixed states|V. N. Narozhnyi,J. Freudenberger,V. N. Kochetkov,K. A. Nenkov,G. Fuchs,K. -H. Müller###
(488977, 488982)
Hall-effect in LuNi2B2C in normal and superconducting mixed states.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 40, 'K', 2],[136.0, 90, '%', 2]

LuNi2B2C
###Hall-effect in LuNi_2B_2C in normal and superconducting mixed states|V. N. Narozhnyi,J. Freudenberger,V. N. Kochetkov,K. A. Nenkov,G. Fuchs,K. -H. Müller###
(489008, 489013)
 The Hall resistivity rhoxy of LuNi2B2C is negative in the normal as wellas in the mixed state and has no sign reversal typical for high-Tcsuperconductors.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 40, 'K', 1],[105.0, 90, '%', 1]

H
###Hall-effect in LuNi_2B_2C in normal and superconducting mixed states|V. N. Narozhnyi,J. Freudenberger,V. N. Kochetkov,K. A. Nenkov,G. Fuchs,K. -H. Müller###
(489082, 489082)
 A distinct nonlinearity in the rhoxy dependence on field Hwas found in the normal state for T<missing VAR> < 40K, accompanied by a largemagnetoresistance reaching 90% for mu0H16T<missing VAR> at T<missing VAR>20K.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 40, 'K', 0],[36.0, 90, '%', 0]

H16
###Hall-effect in LuNi_2B_2C in normal and superconducting mixed states|V. N. Narozhnyi,J. Freudenberger,V. N. Kochetkov,K. A. Nenkov,G. Fuchs,K. -H. Müller###
(489125, 489126)
 A distinct nonlinearity in the rhoxy dependence on field Hwas found in the normal state for T<missing VAR> < 40K, accompanied by a largemagnetoresistance reaching 90% for mu0H16T<missing VAR> at T<missing VAR>20K.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 40, 'K', 0],[7.0, 90, '%', 0]

K
###Hall-effect in LuNi_2B_2C in normal and superconducting mixed states|V. N. Narozhnyi,J. Freudenberger,V. N. Kochetkov,K. A. Nenkov,G. Fuchs,K. -H. Müller###
(489133, 489133)
 A distinct nonlinearity in the rhoxy dependence on field Hwas found in the normal state for T<missing VAR> < 40K, accompanied by a largemagnetoresistance reaching 90% for mu0H16T<missing VAR> at T<missing VAR>20K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 40, 'K', 0],[15.0, 90, '%', 0]

N
###Strongly Anisotropic Transport in Higher Two-Dimensional Landau Levels|R. R. Du,D. C. Tsui,H. L. Stormer,L. N. Pfeiffer,K. W. Baldwin,K. W. West###
(489244, 489244)
 Low-temperature, electronic transport in Landau levels N>1 of atwo-dimensional electron system is strongly anisotropic.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Strongly Anisotropic Transport in Higher Two-Dimensional Landau Levels|R. R. Du,D. C. Tsui,H. L. Stormer,L. N. Pfeiffer,K. W. Baldwin,K. W. West###
(489268, 489268)
 At half-filling ofeither spin level of each such Landau level the magnetoresistance eithercollapses to form a deep minimum or is peaked in a sharp maximum, depending onthe in-plane current direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N0
###Strongly Anisotropic Transport in Higher Two-Dimensional Landau Levels|R. R. Du,D. C. Tsui,H. L. Stormer,L. N. Pfeiffer,K. W. Baldwin,K. W. West###
(489355, 489356)
 Such anisotropies are absent in the N0 and N1Landau level, which are dominated by the states of the fractional quantum Halleffect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N1
###Strongly Anisotropic Transport in Higher Two-Dimensional Landau Levels|R. R. Du,D. C. Tsui,H. L. Stormer,L. N. Pfeiffer,K. W. Baldwin,K. W. West###
(489360, 489361)
 Such anisotropies are absent in the N0 and N1Landau level, which are dominated by the states of the fractional quantum Halleffect.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(Tc)
###Thermodynamics of the Double Exchange Systems|N. Furukawa###
(489628, 489630)
 We showthat high Curie temperature (Tc) compounds, e.g.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La
###Thermodynamics of the Double Exchange Systems|N. Furukawa###
(489641, 489641)
 (La,Sr)MnO3, are canonicaldouble-exchange systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr
###Thermodynamics of the Double Exchange Systems|N. Furukawa###
(489643, 489643)
 (La,Sr)MnO3, are canonicaldouble-exchange systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnO3
###Thermodynamics of the Double Exchange Systems|N. Furukawa###
(489645, 489647)
 (La,Sr)MnO3, are canonicaldouble-exchange systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###Thermodynamics of the Double Exchange Systems|N. Furukawa###
(489674, 489674)
 Properties of other compounds with lower Tc arediscussed in relation to inhomogeneities of the system including the issue ofphase separation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Magnetoresistance, Micromagnetism and Domain Wall Effects in Epitaxial Fe and Co Structures with Stripe Domains|Andrew D. Kent,Ulrich Rüdiger,Jun Yu,Luc Thomas,Stuart S. P. Parkin###
(489734, 489734)
Magnetoresistance, Micromagnetism and Domain Wall Effects in Epitaxial Fe and Co Structures with Stripe Domains.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Magnetoresistance, Micromagnetism and Domain Wall Effects in Epitaxial Fe and Co Structures with Stripe Domains|Andrew D. Kent,Ulrich Rüdiger,Jun Yu,Luc Thomas,Stuart S. P. Parkin###
(489738, 489738)
Magnetoresistance, Micromagnetism and Domain Wall Effects in Epitaxial Fe and Co Structures with Stripe Domains.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Magnetoresistance, Micromagnetism and Domain Wall Effects in Epitaxial Fe and Co Structures with Stripe Domains|Andrew D. Kent,Ulrich Rüdiger,Jun Yu,Luc Thomas,Stuart S. P. Parkin###
(489784, 489784)
 We review our recent magnetotransport and micromagnetic studies oflithographically defined epitaxial thin film structures of bcc Fe and hcp Cowith stripe domains.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Magnetoresistance, Micromagnetism and Domain Wall Effects in Epitaxial Fe and Co Structures with Stripe Domains|Andrew D. Kent,Ulrich Rüdiger,Jun Yu,Luc Thomas,Stuart S. P. Parkin###
(489790, 489790)
 We review our recent magnetotransport and micromagnetic studies oflithographically defined epitaxial thin film structures of bcc Fe and hcp Cowith stripe domains.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Magnetoresistance, Micromagnetism and Domain Wall Effects in Epitaxial Fe and Co Structures with Stripe Domains|Andrew D. Kent,Ulrich Rüdiger,Jun Yu,Luc Thomas,Stuart S. P. Parkin###
(489854, 489854)
 Micromagnetic structure and resistivity anisotropy areshown to be the predominant sources of low field magnetoresistance (MR) inthese microstructures, with domain wall (D<missing VAR>W) effects smaller but observable(D<missing VAR>W-MR lesssim 1 %).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Magnetoresistance, Micromagnetism and Domain Wall Effects in Epitaxial Fe and Co Structures with Stripe Domains|Andrew D. Kent,Ulrich Rüdiger,Jun Yu,Luc Thomas,Stuart S. P. Parkin###
(489868, 489868)
 Micromagnetic structure and resistivity anisotropy areshown to be the predominant sources of low field magnetoresistance (MR) inthese microstructures, with domain wall (D<missing VAR>W) effects smaller but observable(D<missing VAR>W-MR lesssim 1 %).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magnetoresistance, Micromagnetism and Domain Wall Effects in Epitaxial Fe and Co Structures with Stripe Domains|Andrew D. Kent,Ulrich Rüdiger,Jun Yu,Luc Thomas,Stuart S. P. Parkin###
(489881, 489881)
 In Fe, at low temperature, in a regime in which fieldshave a significant effect on electron trajectories, a novel negative D<missing VAR>Wcontribution to the resistivity is observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Magnetoresistance, Micromagnetism and Domain Wall Effects in Epitaxial Fe and Co Structures with Stripe Domains|Andrew D. Kent,Ulrich Rüdiger,Jun Yu,Luc Thomas,Stuart S. P. Parkin###
(489883, 489883)
 In Fe, at low temperature, in a regime in which fieldshave a significant effect on electron trajectories, a novel negative D<missing VAR>Wcontribution to the resistivity is observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Magnetoresistance, Micromagnetism and Domain Wall Effects in Epitaxial Fe and Co Structures with Stripe Domains|Andrew D. Kent,Ulrich Rüdiger,Jun Yu,Luc Thomas,Stuart S. P. Parkin###
(489928, 489928)
 In Fe, at low temperature, in a regime in which fieldshave a significant effect on electron trajectories, a novel negative D<missing VAR>Wcontribution to the resistivity is observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magnetoresistance, Micromagnetism and Domain Wall Effects in Epitaxial Fe and Co Structures with Stripe Domains|Andrew D. Kent,Ulrich Rüdiger,Jun Yu,Luc Thomas,Stuart S. P. Parkin###
(489944, 489944)
 In hcp Co microstructures,temperature dependent transport measurements for current perpendicular andparallel to walls show that any additional resistivity due to D<missing VAR>W scattering isvery small.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Magnetoresistance, Micromagnetism and Domain Wall Effects in Epitaxial Fe and Co Structures with Stripe Domains|Andrew D. Kent,Ulrich Rüdiger,Jun Yu,Luc Thomas,Stuart S. P. Parkin###
(489948, 489948)
 In hcp Co microstructures,temperature dependent transport measurements for current perpendicular andparallel to walls show that any additional resistivity due to D<missing VAR>W scattering isvery small.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Magnetoresistance, Micromagnetism and Domain Wall Effects in Epitaxial Fe and Co Structures with Stripe Domains|Andrew D. Kent,Ulrich Rüdiger,Jun Yu,Luc Thomas,Stuart S. P. Parkin###
(489992, 489992)
 In hcp Co microstructures,temperature dependent transport measurements for current perpendicular andparallel to walls show that any additional resistivity due to D<missing VAR>W scattering isvery small.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###The Kronig-Penney-Ising picture of the colossal magnetoresistance|N. Vandewalle,M. Ausloos,R. Cloots###
(490309, 490309)
 From general arguments, it is shown that a magnetic Kronig-Penney model basedon the thermodynamics of an Ising model can be used for describing the ColossalMagnetoresistance (CMR) phenomenon.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###The Kronig-Penney-Ising picture of the colossal magnetoresistance|N. Vandewalle,M. Ausloos,R. Cloots###
(490360, 490360)
 In this model, correlationsbetween the magnetic states are considered to be more relevant than the latticestrain effects for obtaining the CMR features.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###The Kronig-Penney-Ising picture of the colossal magnetoresistance|N. Vandewalle,M. Ausloos,R. Cloots###
(490407, 490407)
 In this model, correlationsbetween the magnetic states are considered to be more relevant than the latticestrain effects for obtaining the CMR features.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###The Kronig-Penney-Ising picture of the colossal magnetoresistance|N. Vandewalle,M. Ausloos,R. Cloots###
(490448, 490448)
 Physical arguments lead to thetheoretical description of the intrinsic temperature and field dependences ofthe CMR observed in typical manganite materials.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Magnetoresistance, Micromagnetism, and Domain Wall Scattering in Epitaxial hcp Co Films|U. Ruediger,J. Yu,L. Thomas,S. S. P. Parkin,A. D. Kent###
(490773, 490773)
Magnetoresistance, Micromagnetism, and Domain Wall Scattering in Epitaxial hcp Co Films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Magnetoresistance, Micromagnetism, and Domain Wall Scattering in Epitaxial hcp Co Films|U. Ruediger,J. Yu,L. Thomas,S. S. P. Parkin,A. D. Kent###
(490802, 490802)
 Large negative magnetoresistance (MR) observed in transport measurements ofhcp Co films with stripe domains were recently reported and interpreted interms of a novel domain wall (D<missing VAR>W) scattering mechanism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Magnetoresistance, Micromagnetism, and Domain Wall Scattering in Epitaxial hcp Co Films|U. Ruediger,J. Yu,L. Thomas,S. S. P. Parkin,A. D. Kent###
(490839, 490839)
 Large negative magnetoresistance (MR) observed in transport measurements ofhcp Co films with stripe domains were recently reported and interpreted interms of a novel domain wall (D<missing VAR>W) scattering mechanism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(CIW)
###Magnetoresistance, Micromagnetism, and Domain Wall Scattering in Epitaxial hcp Co Films|U. Ruediger,J. Yu,L. Thomas,S. S. P. Parkin,A. D. Kent###
(490949, 490953)
 Measurements of the resistivity for currents parallel(CIW) and perpendicular to D<missing VAR>Ws (CPW) have been conducted as a function oftemperature.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(CPW)
###Magnetoresistance, Micromagnetism, and Domain Wall Scattering in Epitaxial hcp Co Films|U. Ruediger,J. Yu,L. Thomas,S. S. P. Parkin,A. D. Kent###
(490964, 490968)
 Measurements of the resistivity for currents parallel(CIW) and perpendicular to D<missing VAR>Ws (CPW) have been conducted as a function oftemperature.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(CPP)
###Suppression of Giant Magnetoresistance by a superconducting contact|F. Taddei,S. Sanvito,J. H. Jefferson,C. J. Lambert###
(491302, 491306)
 We predict that current perpendicular to the plane (CPP) giantmagnetoresistance (GMR) in a phase-coherent magnetic multilayer is suppressedwhen one of the contacts is superconducting.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Suppression of Giant Magnetoresistance by a superconducting contact|F. Taddei,S. Sanvito,J. H. Jefferson,C. J. Lambert###
(491373, 491373)
 This is a consequence of asuperconductivity-induced magneto-resistive (SMR) effect, whereby theconductance of the ferromagnetically aligned state is drastically reduced bysuperconductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Suppression of Giant Magnetoresistance by a superconducting contact|F. Taddei,S. Sanvito,J. H. Jefferson,C. J. Lambert###
(491439, 491439)
 To demonstrate this effect, we compute the GMR ratio ofclean (Cu/Co)n<missing VAR>Cu and (Cu/Co)n<missing VAR>Pb multilayers, described by an ab-initio spdtight binding Hamiltonian.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Suppression of Giant Magnetoresistance by a superconducting contact|F. Taddei,S. Sanvito,J. H. Jefferson,C. J. Lambert###
(491442, 491442)
 To demonstrate this effect, we compute the GMR ratio ofclean (Cu/Co)n<missing VAR>Cu and (Cu/Co)n<missing VAR>Pb multilayers, described by an ab-initio spdtight binding Hamiltonian.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Suppression of Giant Magnetoresistance by a superconducting contact|F. Taddei,S. Sanvito,J. H. Jefferson,C. J. Lambert###
(491449, 491449)
 To demonstrate this effect, we compute the GMR ratio ofclean (Cu/Co)n<missing VAR>Cu and (Cu/Co)n<missing VAR>Pb multilayers, described by an ab-initio spdtight binding Hamiltonian.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pb
###Suppression of Giant Magnetoresistance by a superconducting contact|F. Taddei,S. Sanvito,J. H. Jefferson,C. J. Lambert###
(491452, 491452)
 To demonstrate this effect, we compute the GMR ratio ofclean (Cu/Co)n<missing VAR>Cu and (Cu/Co)n<missing VAR>Pb multilayers, described by an ab-initio spdtight binding Hamiltonian.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###The new line of attack of analyses of NMR in 2D structures|G. M. Minkov,S. A. Negashev,O. E. Rut,A. V. Germanenko,O. I. Khrykin,V. I. Shashkin,V. M. Danil'tsev###
(491555, 491555)
The new line of attack of analyses of NMR in 2D structures.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 2, 'D', 0],[163.0, 2, 'D', 2]

N
###The new line of attack of analyses of NMR in 2D structures|G. M. Minkov,S. A. Negashev,O. E. Rut,A. V. Germanenko,O. I. Khrykin,V. I. Shashkin,V. M. Danil'tsev###
(491587, 491587)
 There was shown that Fourier transform of the negative magnetoresistance(NMR) which is due to interference correction to the conductivity contains theinformation about the area distribution function of the closed paths and aboutarea dependence of the mean length of closed paths barL<missing VAR>(S).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 2, 'D', 1],[131.0, 2, 'D', 1]

(S)
###The new line of attack of analyses of NMR in 2D structures|G. M. Minkov,S. A. Negashev,O. E. Rut,A. V. Germanenko,O. I. Khrykin,V. I. Shashkin,V. M. Danil'tsev###
(491660, 491662)
 There was shown that Fourier transform of the negative magnetoresistance(NMR) which is due to interference correction to the conductivity contains theinformation about the area distribution function of the closed paths and aboutarea dependence of the mean length of closed paths barL<missing VAR>(S).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 2, 'D', 1],[56.0, 2, 'D', 1]

N
###The new line of attack of analyses of NMR in 2D structures|G. M. Minkov,S. A. Negashev,O. E. Rut,A. V. Germanenko,O. I. Khrykin,V. I. Shashkin,V. M. Danil'tsev###
(491692, 491692)
 Based on thisline of attack we suggest the method of analysis of NMR and use it for datatreatment of the NMR in 2D structure with doped barrier.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 2, 'D', 2],[26.0, 2, 'D', 0]

N
###The new line of attack of analyses of NMR in 2D structures|G. M. Minkov,S. A. Negashev,O. E. Rut,A. V. Germanenko,O. I. Khrykin,V. I. Shashkin,V. M. Danil'tsev###
(491713, 491713)
 Based on thisline of attack we suggest the method of analysis of NMR and use it for datatreatment of the NMR in 2D structure with doped barrier.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 2, 'D', 2],[5.0, 2, 'D', 0]

(S)
###The new line of attack of analyses of NMR in 2D structures|G. M. Minkov,S. A. Negashev,O. E. Rut,A. V. Germanenko,O. I. Khrykin,V. I. Shashkin,V. M. Danil'tsev###
(491746, 491748)
 There was shown thatin structure investigated barL<missing VAR>(S)dependence is determined by the scatteringanisotropy.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, 2, 'D', 3],[28.0, 2, 'D', 1]

La1.2Sr1.8Mn2O7
###Spin Dynamical Properties of the Layered Perovskite La1.2Sr1.8Mn2O7|H. Fujioka,M. Kubota,K. Hirota,H. Yoshizawa,Y. Moritomo,Y. Endoh###
(491787, 491794)
Spin Dynamical Properties of the Layered Perovskite La1.2Sr1.8Mn2O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.09999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 151, 'meVA', 2],[211.0, 30, '%', 5]

C
###Spin Dynamical Properties of the Layered Perovskite La1.2Sr1.8Mn2O7|H. Fujioka,M. Kubota,K. Hirota,H. Yoshizawa,Y. Moritomo,Y. Endoh###
(491829, 491829)
 Inelastic neutron-scattering measurements were performed on a single crystalof the layered colossal magnetoresistance (CMR) material La1.2Sr1.8Mn2O7 (Tc 120K).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 151, 'meVA', 1],[176.0, 30, '%', 4]

La1.2Sr1.8Mn2O7
###Spin Dynamical Properties of the Layered Perovskite La1.2Sr1.8Mn2O7|H. Fujioka,M. Kubota,K. Hirota,H. Yoshizawa,Y. Moritomo,Y. Endoh###
(491836, 491843)
 Inelastic neutron-scattering measurements were performed on a single crystalof the layered colossal magnetoresistance (CMR) material La1.2Sr1.8Mn2O7 (Tc 120K).
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.09999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 151, 'meVA', 1],[162.0, 30, '%', 4]

Tc
###Spin Dynamical Properties of the Layered Perovskite La1.2Sr1.8Mn2O7|H. Fujioka,M. Kubota,K. Hirota,H. Yoshizawa,Y. Moritomo,Y. Endoh###
(491846, 491846)
 Inelastic neutron-scattering measurements were performed on a single crystalof the layered colossal magnetoresistance (CMR) material La1.2Sr1.8Mn2O7 (Tc 120K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 151, 'meVA', 1],[159.0, 30, '%', 4]

K
###Spin Dynamical Properties of the Layered Perovskite La1.2Sr1.8Mn2O7|H. Fujioka,M. Kubota,K. Hirota,H. Yoshizawa,Y. Moritomo,Y. Endoh###
(491851, 491851)
 Inelastic neutron-scattering measurements were performed on a single crystalof the layered colossal magnetoresistance (CMR) material La1.2Sr1.8Mn2O7 (Tc 120K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 151, 'meVA', 1],[154.0, 30, '%', 4]

La1-x
###Spin Dynamical Properties of the Layered Perovskite La1.2Sr1.8Mn2O7|H. Fujioka,M. Kubota,K. Hirota,H. Yoshizawa,Y. Moritomo,Y. Endoh###
(491918, 491921)
 Thevalue is similar to that of similarly doped La1-xSrxMnO3 though its Tc is threetimes higher, indicating a large renormalization due to low dimensionality.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[22.0, 151, 'meVA', 1],[84.0, 30, '%', 2]

MnO3
###Spin Dynamical Properties of the Layered Perovskite La1.2Sr1.8Mn2O7|H. Fujioka,M. Kubota,K. Hirota,H. Yoshizawa,Y. Moritomo,Y. Endoh###
(491923, 491925)
 Thevalue is similar to that of similarly doped La1-xSrxMnO3 though its Tc is threetimes higher, indicating a large renormalization due to low dimensionality.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 151, 'meVA', 1],[80.0, 30, '%', 2]

Tc
###Spin Dynamical Properties of the Layered Perovskite La1.2Sr1.8Mn2O7|H. Fujioka,M. Kubota,K. Hirota,H. Yoshizawa,Y. Moritomo,Y. Endoh###
(491931, 491931)
 Thevalue is similar to that of similarly doped La1-xSrxMnO3 though its Tc is threetimes higher, indicating a large renormalization due to low dimensionality.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 151, 'meVA', 1],[74.0, 30, '%', 2]

Mn
###Spin Dynamical Properties of the Layered Perovskite La1.2Sr1.8Mn2O7|H. Fujioka,M. Kubota,K. Hirota,H. Yoshizawa,Y. Moritomo,Y. Endoh###
(492023, 492023)
 The out-of-plane coupling is about 30% of the in-plane couplingthough the Mn-O bond lengths are similar.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 151, 'meVA', 3],[18.0, 30, '%', 0]

O
###Spin Dynamical Properties of the Layered Perovskite La1.2Sr1.8Mn2O7|H. Fujioka,M. Kubota,K. Hirota,H. Yoshizawa,Y. Moritomo,Y. Endoh###
(492025, 492025)
 The out-of-plane coupling is about 30% of the in-plane couplingthough the Mn-O bond lengths are similar.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 151, 'meVA', 3],[20.0, 30, '%', 0]

As
###Colossal magnetooptical conductivity in doped manganites|A. S. Alexandrov,A. M. Bratkovsky###
(492370, 492370)
 As with the colossalmagnetoresistance (CMR) itself, the corresponding magnetooptical effect isexplained by the dissociation of localized bipolarons into mobile polaronsowing to the exchange interaction with the localized Mn spins in theferromagnetic phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Colossal magnetooptical conductivity in doped manganites|A. S. Alexandrov,A. M. Bratkovsky###
(492382, 492382)
 As with the colossalmagnetoresistance (CMR) itself, the corresponding magnetooptical effect isexplained by the dissociation of localized bipolarons into mobile polaronsowing to the exchange interaction with the localized Mn spins in theferromagnetic phase.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Colossal magnetooptical conductivity in doped manganites|A. S. Alexandrov,A. M. Bratkovsky###
(492438, 492438)
 As with the colossalmagnetoresistance (CMR) itself, the corresponding magnetooptical effect isexplained by the dissociation of localized bipolarons into mobile polaronsowing to the exchange interaction with the localized Mn spins in theferromagnetic phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Perpendicular transport and magnetization processes in magnetic multilayers with strongly and weakly coupled magnetic layers|M. Zwierzycki,S. Krompiewski###
(492590, 492590)
 Within the framework of a two-band tight-binding model, we have performedcalculations of giant magnetoresistance, exchange coupling and thermoelectricpower (TEP) for a system consisting of three magnetic layers separated by twonon-magnetic spacers with the first two magnetic layers stronglyantiferromagnetically exchange-coupled.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Perpendicular transport and magnetization processes in magnetic multilayers with strongly and weakly coupled magnetic layers|M. Zwierzycki,S. Krompiewski###
(492728, 492728)
 The GMR may take negative valuesfor specific layers thicknesses, and the TEP reveals quite pronouncedoscillations around a negative bias.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nd0.7Sr0.3MnO3
###Electrodynamics of Nd0.7Sr0.3MnO3 Single Crystal investigated by Optical Conductivity Analyses|H. J. Lee,J. H. Jung,Y. S. Lee,J. S. Ahn,T. W. Noh,K. H. Kim,S-W. Cheong###
(492760, 492766)
Electrodynamics of Nd0.7Sr0.3MnO3 Single Crystal investigated by Optical Conductivity Analyses.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nd0.7Sr0.3MnO3
###Electrodynamics of Nd0.7Sr0.3MnO3 Single Crystal investigated by Optical Conductivity Analyses|H. J. Lee,J. H. Jung,Y. S. Lee,J. S. Ahn,T. W. Noh,K. H. Kim,S-W. Cheong###
(492800, 492806)
 We investigated temperature dependent optical conductivity spectra ofNd0.7Sr0.3MnO3 single crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nd0.7Sr0.3MnO3
###Electrodynamics of Nd0.7Sr0.3MnO3 Single Crystal investigated by Optical Conductivity Analyses|H. J. Lee,J. H. Jung,Y. S. Lee,J. S. Ahn,T. W. Noh,K. H. Kim,S-W. Cheong###
(492834, 492840)
 We found that polishing and surface scatteringeffects on the Nd0.7Sr0.3MnO3 crystal surfaces could significantly distort theoptical responses, especially in the mid-infrared region.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nd0.7Sr0.3MnO3
###Electrodynamics of Nd0.7Sr0.3MnO3 Single Crystal investigated by Optical Conductivity Analyses|H. J. Lee,J. H. Jung,Y. S. Lee,J. S. Ahn,T. W. Noh,K. H. Kim,S-W. Cheong###
(492915, 492921)
 Wefound that the spectral weight of Nd0.7Sr0.3MnO3 in the metallic state might becomposed of a Drude carrier term and a strong incoherent mid-infraredabsorptions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Geometrically constrained magnetic wall|Patrick Bruno###
(493146, 493146)
 In particular,the width of a constrained wall cann become very small if the characteristiclength of the constriction is small, as is actually the case in an atomic pointcontact.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Berry Phase Theory of Anomalous Hall Effect: Application to Colossal Magnetoresistance Manganites|Jinwu Ye,Yong Baek Kim,A. J. Millis,P. Majumdar,Z. Tesanovic###
(493298, 493298)
 We show that the Anomalous Hall Effect (AHE) observed in ColossalMagnetoresistance Manganites is a manifestation of Berry phase effects causedby carrier hopping in a non-trivial spin background.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Berry Phase Theory of Anomalous Hall Effect: Application to Colossal Magnetoresistance Manganites|Jinwu Ye,Yong Baek Kim,A. J. Millis,P. Majumdar,Z. Tesanovic###
(493382, 493382)
  We determine the magnitude and temperature dependence of the Berry phasecontribution to the AHE<missing VAR>, finding that it increases rapidly in magnitude as thetemperature is raised from zero through the magnetic transition temperatureTc, peaks at a temperature T<missing VAR>max > Tc and decays as a power of T<missing VAR>, inagreement with experimental data.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YBa2Cu3O6
###Magnetoresistance Anomalies in Antiferromagnetic YBa_2Cu_3O_{6+x}: Fingerprints of Charged Stripes|Yoichi Ando,A. N. Lavrov,Kouji Segawa###
(493527, 493533)
Magnetoresistance Anomalies in Antiferromagnetic YBa2Cu3O6x<missing VAR> Fingerprints of Charged Stripes.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[204.0, 10, 'K', 3]

YBa2Cu3O6
###Magnetoresistance Anomalies in Antiferromagnetic YBa_2Cu_3O_{6+x}: Fingerprints of Charged Stripes|Yoichi Ando,A. N. Lavrov,Kouji Segawa###
(493575, 493581)
 We report novel features in the in-plane magnetoresistance (MR) of heavilyunderdoped YBa2Cu3O6x<missing VAR>, which unveil a developed charged stripestructure in this system.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 10, 'K', 2]

H
###Magnetoresistance Anomalies in Antiferromagnetic YBa_2Cu_3O_{6+x}: Fingerprints of Charged Stripes|Yoichi Ando,A. N. Lavrov,Kouji Segawa###
(493651, 493651)
 One of the striking features is an anisotropy of theMR with a d<missing VAR>-wave symmetry upon rotating the magnetic field H within the abplane, which is caused by the rotation of the stripes with the external field.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 10, 'K', 1]

K
###Magnetoresistance Anomalies in Antiferromagnetic YBa_2Cu_3O_{6+x}: Fingerprints of Charged Stripes|Yoichi Ando,A. N. Lavrov,Kouji Segawa###
(493710, 493710)
With decreasing temperature, a hysteresis shows up below 20 K in the MR curveas a function of H and finally below 10 K the magnetic-field applicationproduces a persistent change in the resistivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 10, 'K', 0]

H
###Magnetoresistance Anomalies in Antiferromagnetic YBa_2Cu_3O_{6+x}: Fingerprints of Charged Stripes|Yoichi Ando,A. N. Lavrov,Kouji Segawa###
(493730, 493730)
With decreasing temperature, a hysteresis shows up below 20 K in the MR curveas a function of H and finally below 10 K the magnetic-field applicationproduces a persistent change in the resistivity.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 10, 'K', 0]

La0.55Ho0.15Sr0.3Mn
###Interesting history effect in the magnetotransport properies of La0.55Ho0.15Sr0.3MnOz films on LaAlO3|P Raychaudhuri,A E P de Araujo,F L A Machado,A K Nigam,R Pinto###
(493815, 493821)
Interesting history effect in the magnetotransport properies of La0.55Ho0.15Sr0.3MnOz films on LaAlO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.275,0,0,0,0,0,0,0,0,0,0.075,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 200, 'K', 2],[93.0, 45, 'K', 2],[96.0, 7, 'Tesla', 2]

LaAlO3
###Interesting history effect in the magnetotransport properies of La0.55Ho0.15Sr0.3MnOz films on LaAlO3|P Raychaudhuri,A E P de Araujo,F L A Machado,A K Nigam,R Pinto###
(493828, 493831)
Interesting history effect in the magnetotransport properies of La0.55Ho0.15Sr0.3MnOz films on LaAlO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 200, 'K', 2],[83.0, 45, 'K', 2],[86.0, 7, 'Tesla', 2]

La0.55Ho0.15Sr0.3Mn
###Interesting history effect in the magnetotransport properies of La0.55Ho0.15Sr0.3MnOz films on LaAlO3|P Raychaudhuri,A E P de Araujo,F L A Machado,A K Nigam,R Pinto###
(493853, 493859)
 We report the magnetoresistance measurements of a highly orientedLa0.55Ho0.15Sr0.3MnOz film on LaAlO3 substrate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.275,0,0,0,0,0,0,0,0,0,0.075,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 200, 'K', 1],[55.0, 45, 'K', 1],[58.0, 7, 'Tesla', 1]

LaAlO3
###Interesting history effect in the magnetotransport properies of La0.55Ho0.15Sr0.3MnOz films on LaAlO3|P Raychaudhuri,A E P de Araujo,F L A Machado,A K Nigam,R Pinto###
(493866, 493869)
 We report the magnetoresistance measurements of a highly orientedLa0.55Ho0.15Sr0.3MnOz film on LaAlO3 substrate.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 200, 'K', 1],[45.0, 45, 'K', 1],[48.0, 7, 'Tesla', 1]

At
###Interesting history effect in the magnetotransport properies of La0.55Ho0.15Sr0.3MnOz films on LaAlO3|P Raychaudhuri,A E P de Araujo,F L A Machado,A K Nigam,R Pinto###
(493974, 493974)
 At2.8 K one also observes a significant hysteresis in the resistance versus fieldcurve.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 200, 'K', 3],[60.0, 45, 'K', 3],[57.0, 7, 'Tesla', 3]

K
###Interesting history effect in the magnetotransport properies of La0.55Ho0.15Sr0.3MnOz films on LaAlO3|P Raychaudhuri,A E P de Araujo,F L A Machado,A K Nigam,R Pinto###
(493979, 493979)
 At2.8 K one also observes a significant hysteresis in the resistance versus fieldcurve.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 200, 'K', 3],[65.0, 45, 'K', 3],[62.0, 7, 'Tesla', 3]

C
###The small polaron crossover transition in colossal magnetoresistance (CMR) manganites|Unjong Yu,B. I. Min###
(494049, 494049)
The small polaron crossover transition in colossal magnetoresistance (CMR) manganites.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###The small polaron crossover transition in colossal magnetoresistance (CMR) manganites|Unjong Yu,B. I. Min###
(494132, 494132)
 Based on the combined model of the double exchange and the polaron, we havestudied the small-to-large polaron crossover transition and explored itseffects on the magnetic and transport properties in colossal magnetoresistance(CMR) manganites.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###The small polaron crossover transition in colossal magnetoresistance (CMR) manganites|Unjong Yu,B. I. Min###
(494188, 494188)
 We have used the variational Lang-Firsov canonicaltransformation, and shown that the magnetic and transport properties of bothhigh and low T<missing VAR>C manganites are well described in terms of a singleformalism.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###The small polaron crossover transition in colossal magnetoresistance (CMR) manganites|Unjong Yu,B. I. Min###
(494229, 494229)
 We have reproduced the rapid resistivity drop below T<missing VAR>C, arealistic CMR ratio, and the it first-order-like sharp magnetic phasetransition, which are observed in low T<missing VAR>C manganites.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###The small polaron crossover transition in colossal magnetoresistance (CMR) manganites|Unjong Yu,B. I. Min###
(494237, 494237)
 We have reproduced the rapid resistivity drop below T<missing VAR>C, arealistic CMR ratio, and the it first-order-like sharp magnetic phasetransition, which are observed in low T<missing VAR>C manganites.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###The small polaron crossover transition in colossal magnetoresistance (CMR) manganites|Unjong Yu,B. I. Min###
(494277, 494277)
 We have reproduced the rapid resistivity drop below T<missing VAR>C, arealistic CMR ratio, and the it first-order-like sharp magnetic phasetransition, which are observed in low T<missing VAR>C manganites.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La(1-x)Ca
###Transport and magnetic properties of La_(1-x)Ca_xMnO_3-films (0.1<x<0.9)|G. Jakob,F. Martin,S. Friedrich,W. Westerburg,M. Maier###
(494300, 494306)
Transport and magnetic properties of La(1-x)Cax<missing VAR>MnO3-films (0.1<x<missing VAR><0.9).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[9.0, 0.1, '<', 0],[60.0, 0.1, '<', 1]

MnO3
###Transport and magnetic properties of La_(1-x)Ca_xMnO_3-films (0.1<x<0.9)|G. Jakob,F. Martin,S. Friedrich,W. Westerburg,M. Maier###
(494308, 494310)
Transport and magnetic properties of La(1-x)Cax<missing VAR>MnO3-films (0.1<x<missing VAR><0.9).
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 0.1, '<', 0],[56.0, 0.1, '<', 1]

La(1-x)Ca
###Transport and magnetic properties of La_(1-x)Ca_xMnO_3-films (0.1<x<0.9)|G. Jakob,F. Martin,S. Friedrich,W. Westerburg,M. Maier###
(494348, 494354)
 By laser ablation we prepared thin films of the colossal magnetoresistivecompound La(1-x)Cax<missing VAR>MnO3 with doping levels 0.1<x<missing VAR><0.9 on MgO substrates.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[33.0, 0.1, '<', 1],[12.0, 0.1, '<', 0]

MnO3
###Transport and magnetic properties of La_(1-x)Ca_xMnO_3-films (0.1<x<0.9)|G. Jakob,F. Martin,S. Friedrich,W. Westerburg,M. Maier###
(494356, 494358)
 By laser ablation we prepared thin films of the colossal magnetoresistivecompound La(1-x)Cax<missing VAR>MnO3 with doping levels 0.1<x<missing VAR><0.9 on MgO substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 0.1, '<', 1],[8.0, 0.1, '<', 0]

MgO
###Transport and magnetic properties of La_(1-x)Ca_xMnO_3-films (0.1<x<0.9)|G. Jakob,F. Martin,S. Friedrich,W. Westerburg,M. Maier###
(494374, 494375)
 By laser ablation we prepared thin films of the colossal magnetoresistivecompound La(1-x)Cax<missing VAR>MnO3 with doping levels 0.1<x<missing VAR><0.9 on MgO substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 0.1, '<', 1],[8.0, 0.1, '<', 0]

S
###Transport and magnetic properties of La_(1-x)Ca_xMnO_3-films (0.1<x<0.9)|G. Jakob,F. Martin,S. Friedrich,W. Westerburg,M. Maier###
(494446, 494446)
 The variation of the transport and magneticproperties in this doping series was investigated by SQ<missing VAR>UID<missing VAR> magnetization andelectrical transport measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 0.1, '<', 3],[80.0, 0.1, '<', 2]

UI
###Transport and magnetic properties of La_(1-x)Ca_xMnO_3-films (0.1<x<0.9)|G. Jakob,F. Martin,S. Friedrich,W. Westerburg,M. Maier###
(494448, 494449)
 The variation of the transport and magneticproperties in this doping series was investigated by SQ<missing VAR>UID<missing VAR> magnetization andelectrical transport measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
[133.0, 0.1, '<', 3],[82.0, 0.1, '<', 2]

FS
###Interface resistance in ferromagnet/superconductor junctions|A. A. Golubov###
(494708, 494709)
 The excessresistance of an FS contact due to the charge-imbalance in a superconductor iscalculated for the first time.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr
###ESR study in lightly doped La_(1-x)Sr_(x)MnO_(3)|V. A. Ivanshin,J. Deisenhofer,H. -A. Krug von Nidda,A. Loidl,A. A. Mukhin,A. M. Balbashov,M. V. Eremin###
(494810, 494810)
ESR study in lightly doped La(1-x)Sr(x)MnO(3).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr
###ESR study in lightly doped La_(1-x)Sr_(x)MnO_(3)|V. A. Ivanshin,J. Deisenhofer,H. -A. Krug von Nidda,A. Loidl,A. A. Mukhin,A. M. Balbashov,M. V. Eremin###
(494845, 494845)
 This is the first systematic ESR investigation of La(1-x)Sr(x)MnO(3)single crystals for Sr concentrations x<missing VAR> < 0.2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr
###ESR study in lightly doped La_(1-x)Sr_(x)MnO_(3)|V. A. Ivanshin,J. Deisenhofer,H. -A. Krug von Nidda,A. Loidl,A. A. Mukhin,A. M. Balbashov,M. V. Eremin###
(494862, 494862)
 This is the first systematic ESR investigation of La(1-x)Sr(x)MnO(3)single crystals for Sr concentrations x<missing VAR> < 0.2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr
###ESR study in lightly doped La_(1-x)Sr_(x)MnO_(3)|V. A. Ivanshin,J. Deisenhofer,H. -A. Krug von Nidda,A. Loidl,A. A. Mukhin,A. M. Balbashov,M. V. Eremin###
(494995, 494995)
 TheESR signal, which is due to both Mn(3) and Mn(4), directely probes thesuppression of the Jahn-Teller distortion with increasing Sr concentration andreveals all characteristic structural and magnetic phase transitions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Gd2PdSi3
###Magnetic anisotropy, first-order-like metamagnetic transitions and large negative magnetoresistance in the single crystal of Gd$_{2}$PdSi$_3$|S. R. Saha,H. Sugawara,T. D. Matsuda,H. Sato,R. Mallik,E. V. Sampathkumaran###
(495060, 495064)
Magnetic anisotropy, first-order-like metamagnetic transitions and large negative magnetoresistance in the single crystal of Gd2PdSi3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 21, 'K', 2],[116.0, 3, 'T', 2]

Gd2PdSi3
###Magnetic anisotropy, first-order-like metamagnetic transitions and large negative magnetoresistance in the single crystal of Gd$_{2}$PdSi$_3$|S. R. Saha,H. Sugawara,T. D. Matsuda,H. Sato,R. Mallik,E. V. Sampathkumaran###
(495107, 495111)
 Electrical resistivity (rho), magnetoresistance (MR), magnetization,thermopower and Hall effect measurements on the single crystalGd2PdSi3, crystallizing in an AlB2-derived hexagonal structure arereported.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 21, 'K', 1],[69.0, 3, 'T', 1]

AlB2
###Magnetic anisotropy, first-order-like metamagnetic transitions and large negative magnetoresistance in the single crystal of Gd$_{2}$PdSi$_3$|S. R. Saha,H. Sugawara,T. D. Matsuda,H. Sato,R. Mallik,E. V. Sampathkumaran###
(495120, 495122)
 Electrical resistivity (rho), magnetoresistance (MR), magnetization,thermopower and Hall effect measurements on the single crystalGd2PdSi3, crystallizing in an AlB2-derived hexagonal structure arereported.
Featurization terminated normally.
0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 21, 'K', 1],[58.0, 3, 'T', 1]

N
###Magnetic anisotropy, first-order-like metamagnetic transitions and large negative magnetoresistance in the single crystal of Gd$_{2}$PdSi$_3$|S. R. Saha,H. Sugawara,T. D. Matsuda,H. Sato,R. Mallik,E. V. Sampathkumaran###
(495156, 495156)
 The well-defined minimum in rho at a temperature above Neeltemperature (T<missing VAR>N 21 K) and large negative MR below sim 3TN, reportedearlier for the polycrystals, are reproducible even in single crystals.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 21, 'K', 0],[24.0, 3, 'T', 0]

N
###Magnetic anisotropy, first-order-like metamagnetic transitions and large negative magnetoresistance in the single crystal of Gd$_{2}$PdSi$_3$|S. R. Saha,H. Sugawara,T. D. Matsuda,H. Sato,R. Mallik,E. V. Sampathkumaran###
(495164, 495164)
 The well-defined minimum in rho at a temperature above Neeltemperature (T<missing VAR>N 21 K) and large negative MR below sim 3TN, reportedearlier for the polycrystals, are reproducible even in single crystals.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[1.0, 21, 'K', 0],[16.0, 3, 'T', 0]

N
###Magnetic anisotropy, first-order-like metamagnetic transitions and large negative magnetoresistance in the single crystal of Gd$_{2}$PdSi$_3$|S. R. Saha,H. Sugawara,T. D. Matsuda,H. Sato,R. Mallik,E. V. Sampathkumaran###
(495181, 495181)
 The well-defined minimum in rho at a temperature above Neeltemperature (T<missing VAR>N 21 K) and large negative MR below sim 3TN, reportedearlier for the polycrystals, are reproducible even in single crystals.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 21, 'K', 0],[1.0, 3, 'T', 0]

Gd
###Magnetic anisotropy, first-order-like metamagnetic transitions and large negative magnetoresistance in the single crystal of Gd$_{2}$PdSi$_3$|S. R. Saha,H. Sugawara,T. D. Matsuda,H. Sato,R. Mallik,E. V. Sampathkumaran###
(495222, 495222)
 Suchfeatures are generally uncharacteristic of Gd alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 21, 'K', 1],[42.0, 3, 'T', 1]

In
###Magnetic anisotropy, first-order-like metamagnetic transitions and large negative magnetoresistance in the single crystal of Gd$_{2}$PdSi$_3$|S. R. Saha,H. Sugawara,T. D. Matsuda,H. Sato,R. Mallik,E. V. Sampathkumaran###
(495227, 495227)
 In addition, we alsofound interesting features in other data, e.g.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 21, 'K', 2],[47.0, 3, 'T', 2]

Gd
###Magnetic anisotropy, first-order-like metamagnetic transitions and large negative magnetoresistance in the single crystal of Gd$_{2}$PdSi$_3$|S. R. Saha,H. Sugawara,T. D. Matsuda,H. Sato,R. Mallik,E. V. Sampathkumaran###
(495308, 495308)
 Thealloy exhibits anisotropy in all these properties, though Gd is a S-state ion.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 21, 'K', 4],[128.0, 3, 'T', 4]

S
###Magnetic anisotropy, first-order-like metamagnetic transitions and large negative magnetoresistance in the single crystal of Gd$_{2}$PdSi$_3$|S. R. Saha,H. Sugawara,T. D. Matsuda,H. Sato,R. Mallik,E. V. Sampathkumaran###
(495314, 495314)
 Thealloy exhibits anisotropy in all these properties, though Gd is a S-state ion.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 21, 'K', 4],[134.0, 3, 'T', 4]

S
###Spin Wave Theory of Double Exchange Ferromagnets|D. I. Golosov###
(495352, 495352)
 We construct the 1/S spin-wave expansion for double exchange ferromagnets atT<missing VAR>0.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Spin Wave Theory of Double Exchange Ferromagnets|D. I. Golosov###
(495398, 495398)
 It is assumed that the value of Hunds<missing VAR> rule coupling, J<missing VAR>H, is sufficientlylarge, resulting in a fully saturated, ferromagnetic half-metallic groundstate.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Theory of anomalous magnon softening in ferromagnetic manganites|G. Khaliullin,R. Kilian###
(495562, 495562)
 In metallic manganites with low Curie temperatures, a peculiar softening ofthe magnon spectrum close to the magnetic zone boundary has experimentally beenobserved.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(P)
###Influence of parallel magnetic fields on a single-layer two-dimensional electron system with a hopping mechanism of conductivity|I. Shlimak,S. I. Khondaker,M. Pepper,D. A. Ritchie###
(495847, 495849)
 Large positive (P) magnetoresistance (MR) has been observed in parallelmagnetic fields in a single 2D layer in a delta-doped GaAs/AlGaAsheterostructure with a variable-range-hopping (VR<missing VAR>H) mechanism of conductivity.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 2, 'D', 0],[145.0, 2, 'D', 2]

GaAs/AlGaAs
###Influence of parallel magnetic fields on a single-layer two-dimensional electron system with a hopping mechanism of conductivity|I. Shlimak,S. I. Khondaker,M. Pepper,D. A. Ritchie###
(495890, 495895)
 Large positive (P) magnetoresistance (MR) has been observed in parallelmagnetic fields in a single 2D layer in a delta-doped GaAs/AlGaAsheterostructure with a variable-range-hopping (VR<missing VAR>H) mechanism of conductivity.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[12.0, 2, 'D', 0],[99.0, 2, 'D', 2]

V
###Influence of parallel magnetic fields on a single-layer two-dimensional electron system with a hopping mechanism of conductivity|I. Shlimak,S. I. Khondaker,M. Pepper,D. A. Ritchie###
(495911, 495911)
 Large positive (P) magnetoresistance (MR) has been observed in parallelmagnetic fields in a single 2D layer in a delta-doped GaAs/AlGaAsheterostructure with a variable-range-hopping (VR<missing VAR>H) mechanism of conductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 2, 'D', 0],[83.0, 2, 'D', 2]

H
###Influence of parallel magnetic fields on a single-layer two-dimensional electron system with a hopping mechanism of conductivity|I. Shlimak,S. I. Khondaker,M. Pepper,D. A. Ritchie###
(495913, 495913)
 Large positive (P) magnetoresistance (MR) has been observed in parallelmagnetic fields in a single 2D layer in a delta-doped GaAs/AlGaAsheterostructure with a variable-range-hopping (VR<missing VAR>H) mechanism of conductivity.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 2, 'D', 0],[81.0, 2, 'D', 2]

P
###Influence of parallel magnetic fields on a single-layer two-dimensional electron system with a hopping mechanism of conductivity|I. Shlimak,S. I. Khondaker,M. Pepper,D. A. Ritchie###
(495930, 495930)
Effect of large PMR is accompanied in strong magnetic fields by a substantialchange in the character of the temperature dependence of the conductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 2, 'D', 1],[64.0, 2, 'D', 1]

V
###Influence of parallel magnetic fields on a single-layer two-dimensional electron system with a hopping mechanism of conductivity|I. Shlimak,S. I. Khondaker,M. Pepper,D. A. Ritchie###
(495996, 495996)
 Thisimplies that spins play an important role in 2D VR<missing VAR>H conductivity because theprocesses of orbital origin are not relevant to the observed effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 2, 'D', 2],[2.0, 2, 'D', 0]

H
###Influence of parallel magnetic fields on a single-layer two-dimensional electron system with a hopping mechanism of conductivity|I. Shlimak,S. I. Khondaker,M. Pepper,D. A. Ritchie###
(495998, 495998)
 Thisimplies that spins play an important role in 2D VR<missing VAR>H conductivity because theprocesses of orbital origin are not relevant to the observed effect.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 2, 'D', 2],[4.0, 2, 'D', 0]

Bi
###Electronic Transport in a Three-dimensional Network of 1-D Bismuth Quantum Wires|T. E. Huber,M. J. Graf###
(496136, 496136)
 The resistance R<missing VAR> of a high density network of 6 nm diameter Bi wires inporous Vycor glass is studied in order to observe its expected semiconductorbehavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 6, 'nm', 0],[40.0, 300, 'K', 1],[45.0, 0.3, 'K', 1],[49.0, 4, 'K', 2]

Bi
###Electronic Transport in a Three-dimensional Network of 1-D Bismuth Quantum Wires|T. E. Huber,M. J. Graf###
(496334, 496334)
 We show that thisbehaviour and the surface-enhanced carrier density may mask the proposedsemimetal-to-semiconductor transition for quantum Bi wires.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[202.0, 6, 'nm', 3],[158.0, 300, 'K', 2],[153.0, 0.3, 'K', 2],[149.0, 4, 'K', 1]

YBa2Cu3O6
###Manifestations of the Charged Stripes in the Magnetoresistance of Heavily Underdoped YBa_2Cu_3O_{6+x}|A. N. Lavrov,Yoichi Ando,Kouji Segawa###
(496369, 496375)
Manifestations of the Charged Stripes in the Magnetoresistance of Heavily Underdoped YBa2Cu3O6x<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YBa2Cu3O6
###Manifestations of the Charged Stripes in the Magnetoresistance of Heavily Underdoped YBa_2Cu_3O_{6+x}|A. N. Lavrov,Yoichi Ando,Kouji Segawa###
(496420, 496426)
 We present a study of the in-plane and out-of-plane magnetoresistance (MR) inheavily-underdoped, antiferromagnetic YBa2Cu3O6x<missing VAR>, which reveals a varietyof striking features.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Manifestations of the Charged Stripes in the Magnetoresistance of Heavily Underdoped YBa_2Cu_3O_{6+x}|A. N. Lavrov,Yoichi Ando,Kouji Segawa###
(496478, 496478)
 The in-plane MR demonstrates a d<missing VAR>-wave-like anisotropyupon rotating the magnetic field H within the ab plane.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Manifestations of the Charged Stripes in the Magnetoresistance of Heavily Underdoped YBa_2Cu_3O_{6+x}|A. N. Lavrov,Yoichi Ando,Kouji Segawa###
(496502, 496502)
 With decreasingtemperature below 20-25 K the system acquires memory exposing a crystal to themagnetic field results in a persistent in-plane resistivity anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CuO2
###Manifestations of the Charged Stripes in the Magnetoresistance of Heavily Underdoped YBa_2Cu_3O_{6+x}|A. N. Lavrov,Yoichi Ando,Kouji Segawa###
(496565, 496567)
 Theoverall features can be explained by assuming that the CuO2 planes contain adeveloped array of stripes accommodating the doped holes, and that the MR isassociated with the field-induced topological ordering of the stripes.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Weak localisation, hole-hole interactions and the "metal"-insulator transition in two dimensions|M. Y. Simmons,A. R. Hamilton,M. Pepper,E. H. Linfield,P. D. Rose,D. A. Ritchie,.###
(496683, 496684)
 A detailed investigation of the metallic behaviour in high qualityGaAs-AlGaAs two dimensional hole systems reveals the presence of quantumcorrections to the resistivity at low temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

AlGaAs
###Weak localisation, hole-hole interactions and the "metal"-insulator transition in two dimensions|M. Y. Simmons,A. R. Hamilton,M. Pepper,E. H. Linfield,P. D. Rose,D. A. Ritchie,.###
(496686, 496688)
 A detailed investigation of the metallic behaviour in high qualityGaAs-AlGaAs two dimensional hole systems reveals the presence of quantumcorrections to the resistivity at low temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Two-phase behavior in strained thin films of hole-doped manganites|Amlan Biswas,M. Rajeswari,R. C. Srivastava,Y. H. Li,T. Venkatesan,R. L. Greene,A. J. Millis###
(497077, 497077)
In such non-uniformly strained samples, we observe a large magnetoresistanceand a field-induced insulator to metal transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Weak localization in the 2D metallic regime of Si-MOS|G. Brunthaler,A. Prinz,G. Bauer,V. M. Pudalov,E. M. Dizhur,J. Jaroszynski,P. Glod,T. Dietl###
(497141, 497141)
Weak localization in the 2D metallic regime of Si-M<missing VAR>OS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 2, 'D', 0],[58.0, 35, 'and', 1],[59.0, 120, 'e', 1],[91.0, 10, 'K', 2],[96.0, 100, 'times', 2],[209.0, 200, 'ps', 4]

OS
###Weak localization in the 2D metallic regime of Si-MOS|G. Brunthaler,A. Prinz,G. Bauer,V. M. Pudalov,E. M. Dizhur,J. Jaroszynski,P. Glod,T. Dietl###
(497144, 497145)
Weak localization in the 2D metallic regime of Si-M<missing VAR>OS.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 2, 'D', 0],[54.0, 35, 'and', 1],[55.0, 120, 'e', 1],[87.0, 10, 'K', 2],[92.0, 100, 'times', 2],[205.0, 200, 'ps', 4]

Si
###Weak localization in the 2D metallic regime of Si-MOS|G. Brunthaler,A. Prinz,G. Bauer,V. M. Pudalov,E. M. Dizhur,J. Jaroszynski,P. Glod,T. Dietl###
(497181, 497181)
 The negative magnetoresistance due to weak localization is investigated inthe two-dimensional metallic state of Si-M<missing VAR>OS structures for high conductancevalues between 35 and 120 e2/h<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 2, 'D', 1],[18.0, 35, 'and', 0],[19.0, 120, 'e', 0],[51.0, 10, 'K', 1],[56.0, 100, 'times', 1],[169.0, 200, 'ps', 3]

OS
###Weak localization in the 2D metallic regime of Si-MOS|G. Brunthaler,A. Prinz,G. Bauer,V. M. Pudalov,E. M. Dizhur,J. Jaroszynski,P. Glod,T. Dietl###
(497184, 497185)
 The negative magnetoresistance due to weak localization is investigated inthe two-dimensional metallic state of Si-M<missing VAR>OS structures for high conductancevalues between 35 and 120 e2/h<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 2, 'D', 1],[14.0, 35, 'and', 0],[15.0, 120, 'e', 0],[47.0, 10, 'K', 1],[52.0, 100, 'times', 1],[165.0, 200, 'ps', 3]

Co/Cu
###Nanoconstriction Microscopy of the Giant Magnetoresistance in Cobalt/Copper Spin Valves|S. J. C. H. Theeuwen,J. Caro,K. P. Wellock,S. Radelaar,C. H. Marrows,B. J. Hickey,V. I. Kozub###
(497404, 497406)
 We use nanometer-sized point contacts to a Co/Cu spin valve to study thegiant magnetoresistance (GMR) of only a few Co domains.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Co
###Nanoconstriction Microscopy of the Giant Magnetoresistance in Cobalt/Copper Spin Valves|S. J. C. H. Theeuwen,J. Caro,K. P. Wellock,S. Radelaar,C. H. Marrows,B. J. Hickey,V. I. Kozub###
(497437, 497437)
 We use nanometer-sized point contacts to a Co/Cu spin valve to study thegiant magnetoresistance (GMR) of only a few Co domains.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Zn
###Metallic nonsuperconducting phase and d-wave superconductivity in Zn-substituted LaSrCuO|K. Karpinska,Marta Z. Cieplak,S. Guha,A. Malinowski,T. Skoskiewicz,W. Plesiewicz,M. Berkowski,B. Boyce,Thomas R. Lemberger,P. Lindenfeld###
(497659, 497659)
Metallic nonsuperconducting phase and d<missing VAR>-wave superconductivity in Zn-substituted LaSrCuO.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 12, 'at', 1]

LaSrCuO
###Metallic nonsuperconducting phase and d-wave superconductivity in Zn-substituted LaSrCuO|K. Karpinska,Marta Z. Cieplak,S. Guha,A. Malinowski,T. Skoskiewicz,W. Plesiewicz,M. Berkowski,B. Boyce,Thomas R. Lemberger,P. Lindenfeld###
(497663, 497666)
Metallic nonsuperconducting phase and d<missing VAR>-wave superconductivity in Zn-substituted LaSrCuO.
Featurization terminated normally.
0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 12, 'at', 1]

LaSrCuO
###Metallic nonsuperconducting phase and d-wave superconductivity in Zn-substituted LaSrCuO|K. Karpinska,Marta Z. Cieplak,S. Guha,A. Malinowski,T. Skoskiewicz,W. Plesiewicz,M. Berkowski,B. Boyce,Thomas R. Lemberger,P. Lindenfeld###
(497697, 497700)
 Measurements of the resistivity, magnetoresistance and penetration depth weremade on films of LaSrCuO with up to 12 at.
Featurization terminated normally.
0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 12, 'at', 0]

Zn
###Metallic nonsuperconducting phase and d-wave superconductivity in Zn-substituted LaSrCuO|K. Karpinska,Marta Z. Cieplak,S. Guha,A. Malinowski,T. Skoskiewicz,W. Plesiewicz,M. Berkowski,B. Boyce,Thomas R. Lemberger,P. Lindenfeld###
(497713, 497713)
 of Zn substituted for the Cu.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 12, 'at', 1]

Cu
###Metallic nonsuperconducting phase and d-wave superconductivity in Zn-substituted LaSrCuO|K. Karpinska,Marta Z. Cieplak,S. Guha,A. Malinowski,T. Skoskiewicz,W. Plesiewicz,M. Berkowski,B. Boyce,Thomas R. Lemberger,P. Lindenfeld###
(497721, 497721)
 of Zn substituted for the Cu.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 12, 'at', 1]

Fl1
###Metallic nonsuperconducting phase and d-wave superconductivity in Zn-substituted LaSrCuO|K. Karpinska,Marta Z. Cieplak,S. Guha,A. Malinowski,T. Skoskiewicz,W. Plesiewicz,M. Berkowski,B. Boyce,Thomas R. Lemberger,P. Lindenfeld###
(497845, 497846)
 The metal-insulator transition occurs in the vicinity of k<missing VAR>Fl1,and appears to be disorder-driven, with the carrier concentration unaffected bydoping.
EXCEPTION 3: IndexError for Fl1
[138.0, 12, 'at', 4]

C
###Anomaly of AC resistance in magnetic nanoparticle alloys at spin-glass-like transition|A. B. Pakhomov,J. C. Denardin,M. Knobel,O. F. de Lima###
(497892, 497892)
Anomaly of AC resistance in magnetic nanoparticle alloys at spin-glass-like transition.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Anomaly of AC resistance in magnetic nanoparticle alloys at spin-glass-like transition|A. B. Pakhomov,J. C. Denardin,M. Knobel,O. F. de Lima###
(497934, 497934)
 (withdrawn) A combined study of magnetic susceptibility and AC resistance wasperformed on melt-spun Cu-Co granular magnetic ribbons.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Anomaly of AC resistance in magnetic nanoparticle alloys at spin-glass-like transition|A. B. Pakhomov,J. C. Denardin,M. Knobel,O. F. de Lima###
(497949, 497949)
 (withdrawn) A combined study of magnetic susceptibility and AC resistance wasperformed on melt-spun Cu-Co granular magnetic ribbons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Anomaly of AC resistance in magnetic nanoparticle alloys at spin-glass-like transition|A. B. Pakhomov,J. C. Denardin,M. Knobel,O. F. de Lima###
(497951, 497951)
 (withdrawn) A combined study of magnetic susceptibility and AC resistance wasperformed on melt-spun Cu-Co granular magnetic ribbons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Anomaly of AC resistance in magnetic nanoparticle alloys at spin-glass-like transition|A. B. Pakhomov,J. C. Denardin,M. Knobel,O. F. de Lima###
(497963, 497963)
 The AC resistance as afunction of temperature has a sharp maximum.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Anomaly of AC resistance in magnetic nanoparticle alloys at spin-glass-like transition|A. B. Pakhomov,J. C. Denardin,M. Knobel,O. F. de Lima###
(498101, 498101)
 Giant AC magnetoresistance is observed at the freezingtemperature.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SiGe
###Weak localisation, interaction effects and the metallic phase in p-SiGe|P. T. Coleridge,A. S. Sachrajda,P. Zawadzki###
(498148, 498149)
Weak localisation, interaction effects and the metallic phase in p<missing VAR>-SiGe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SiGe
###Weak localisation, interaction effects and the metallic phase in p-SiGe|P. T. Coleridge,A. S. Sachrajda,P. Zawadzki###
(498164, 498165)
 Magnetoresistance results are presented for p<missing VAR>-SiGe samples on the metallicside of the B0 metal-insulator transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B0
###Weak localisation, interaction effects and the metallic phase in p-SiGe|P. T. Coleridge,A. S. Sachrajda,P. Zawadzki###
(498182, 498183)
 Magnetoresistance results are presented for p<missing VAR>-SiGe samples on the metallicside of the B0 metal-insulator transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F0
###Weak localisation, interaction effects and the metallic phase in p-SiGe|P. T. Coleridge,A. S. Sachrajda,P. Zawadzki###
(498322, 498323)
 Analysis using atheory for interaction corrections at intermediate temperatures, recentlyproposed by Zala, Narozhny and Aleiner, provided values of the Fermi liquidparameter F0sigma of order -0.5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Sr2CaCu2O8
###Various regimes of flux motion in Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ single crystals|Weimin Chen,J. P. Franck,J. Jung###
(498390, 498398)
Various regimes of flux motion in Bi2Sr2CaCu2O8 single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.06666666666666667,0,0,0,0,0,0,0,0,0.13333333333333333,0,0,0,0,0,0,0,0,0.13333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 2, ';', 1]

Bi2Sr2CaCu2O8
###Various regimes of flux motion in Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ single crystals|Weimin Chen,J. P. Franck,J. Jung###
(498428, 498436)
 Four regimes of vortex motion were identified in the magnetoresistance ofBi2Sr2CaCu2O8delta single crystals (1) thermally activatedflux flow (T<missing VAR>AFF) in samples with surface defects caused by thermal annealing;(2) T<missing VAR>AFF-like plastic motion of highly entangled vortex liquid at lowtemperatures, with Upl sim (1-T/Tc)/H1/2; (3) pure free flux flowabove the region of (2) in clean and optimally doped samples; or, in its place,(4) a combination of (2) and (3).
Featurization terminated normally.
0,0,0,0,0,0,0,0.5333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.06666666666666667,0,0,0,0,0,0,0,0,0.13333333333333333,0,0,0,0,0,0,0,0,0.13333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 2, ';', 0]

F
###Various regimes of flux motion in Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ single crystals|Weimin Chen,J. P. Franck,J. Jung###
(498460, 498460)
 Four regimes of vortex motion were identified in the magnetoresistance ofBi2Sr2CaCu2O8delta single crystals (1) thermally activatedflux flow (T<missing VAR>AFF) in samples with surface defects caused by thermal annealing;(2) T<missing VAR>AFF-like plastic motion of highly entangled vortex liquid at lowtemperatures, with Upl sim (1-T/Tc)/H1/2; (3) pure free flux flowabove the region of (2) in clean and optimally doped samples; or, in its place,(4) a combination of (2) and (3).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 2, ';', 0]

FF
###Various regimes of flux motion in Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ single crystals|Weimin Chen,J. P. Franck,J. Jung###
(498489, 498490)
 Four regimes of vortex motion were identified in the magnetoresistance ofBi2Sr2CaCu2O8delta single crystals (1) thermally activatedflux flow (T<missing VAR>AFF) in samples with surface defects caused by thermal annealing;(2) T<missing VAR>AFF-like plastic motion of highly entangled vortex liquid at lowtemperatures, with Upl sim (1-T/Tc)/H1/2; (3) pure free flux flowabove the region of (2) in clean and optimally doped samples; or, in its place,(4) a combination of (2) and (3).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 2, ';', 0]

U
###Various regimes of flux motion in Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ single crystals|Weimin Chen,J. P. Franck,J. Jung###
(498518, 498518)
 Four regimes of vortex motion were identified in the magnetoresistance ofBi2Sr2CaCu2O8delta single crystals (1) thermally activatedflux flow (T<missing VAR>AFF) in samples with surface defects caused by thermal annealing;(2) T<missing VAR>AFF-like plastic motion of highly entangled vortex liquid at lowtemperatures, with Upl sim (1-T/Tc)/H1/2; (3) pure free flux flowabove the region of (2) in clean and optimally doped samples; or, in its place,(4) a combination of (2) and (3).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 2, ';', 0]

H1
###Various regimes of flux motion in Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ single crystals|Weimin Chen,J. P. Franck,J. Jung###
(498532, 498533)
 Four regimes of vortex motion were identified in the magnetoresistance ofBi2Sr2CaCu2O8delta single crystals (1) thermally activatedflux flow (T<missing VAR>AFF) in samples with surface defects caused by thermal annealing;(2) T<missing VAR>AFF-like plastic motion of highly entangled vortex liquid at lowtemperatures, with Upl sim (1-T/Tc)/H1/2; (3) pure free flux flowabove the region of (2) in clean and optimally doped samples; or, in its place,(4) a combination of (2) and (3).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 2, ';', 0]

Bi
###Various regimes of flux motion in Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ single crystals|Weimin Chen,J. P. Franck,J. Jung###
(498629, 498629)
 This analysis gives an overall picture offlux motion in Bi cuprates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 2, ';', 1]

Ce(Ru0.5Rh0.5)2Si2
###Non-Fermi-Liquid Scaling in Ce(Ru_{0.5}Rh_{0.5})_2Si_2|Y. Tabata,D. R. Grempel,M. Ocio,T. Taniguchi,Y. Miyako###
(498652, 498661)
Non-Fermi-Liquid Scaling in Ce(Ru0.5Rh0.5)2Si2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ce
###Non-Fermi-Liquid Scaling in Ce(Ru_{0.5}Rh_{0.5})_2Si_2|Y. Tabata,D. R. Grempel,M. Ocio,T. Taniguchi,Y. Miyako###
(498703, 498703)
 We study the temperature and field dependence of the magnetic and transportproperties of the non-Fermi-liquid compound Ce(Ru1-xRhx)2Si2 at x<missing VAR>0.5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ru1-xRh
###Non-Fermi-Liquid Scaling in Ce(Ru_{0.5}Rh_{0.5})_2Si_2|Y. Tabata,D. R. Grempel,M. Ocio,T. Taniguchi,Y. Miyako###
(498705, 498709)
 We study the temperature and field dependence of the magnetic and transportproperties of the non-Fermi-liquid compound Ce(Ru1-xRhx)2Si2 at x<missing VAR>0.5.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

Si2
###Non-Fermi-Liquid Scaling in Ce(Ru_{0.5}Rh_{0.5})_2Si_2|Y. Tabata,D. R. Grempel,M. Ocio,T. Taniguchi,Y. Miyako###
(498713, 498714)
 We study the temperature and field dependence of the magnetic and transportproperties of the non-Fermi-liquid compound Ce(Ru1-xRhx)2Si2 at x<missing VAR>0.5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Enhancement of GMR due to spin-mixing in magnetic multilayers with a superconducting contact|F. Taddei,S. Sanvito,C. J. Lambert###
(499054, 499054)
 In this Letter we demonstrate that the GMR ratio can bedramatically enhanced by spin-orbit interaction and/or non-collinear magneticmoments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YBa2Cu3O6
###Magnetotransport study of the charged stripes in high-T_c cuprates|Yoichi Ando,A. N. Lavrov,Kouji Segawa###
(499691, 499697)
 We present a study of the in-plane and out-of-plane magnetoresistance (MR) inheavily-underdoped, antiferromagnetic YBa2Cu3O6x<missing VAR>, which reveals avariety of striking features.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Magnetotransport study of the charged stripes in high-T_c cuprates|Yoichi Ando,A. N. Lavrov,Kouji Segawa###
(499749, 499749)
 The in-plane MR demonstrates a d<missing VAR>-wave-likeanisotropy upon rotating the magnetic field H within the ab plane.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Magnetotransport study of the charged stripes in high-T_c cuprates|Yoichi Ando,A. N. Lavrov,Kouji Segawa###
(499773, 499773)
 Withdecreasing temperature below 20-25 K, the system acquires memory exposing acrystal to the magnetic field results in a persistent in-plane resistivityanisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CuO2
###Magnetotransport study of the charged stripes in high-T_c cuprates|Yoichi Ando,A. N. Lavrov,Kouji Segawa###
(499837, 499839)
 The overall features can be explained by assuming that the CuO2planes contain a developed array of stripes accommodating the doped holes, andthat the MR is associated with the field-induced topological ordering of thestripes.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S1
###Kondo effect in a magnetic field and the magnetoresistivity of Kondo alloys|T. A. Costi###
(499957, 499958)
 The effect of a magnetic field on the spectral density of a rmS1/2Kondo impurity is investigated at zero and finite temperatures by usingWilsons<missing VAR> numerical renormalization group method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 0.5, 'T', 1]

H
###Kondo effect in a magnetic field and the magnetoresistivity of Kondo alloys|T. A. Costi###
(500032, 500032)
 A splitting of the totalspectral density is found for fields larger than a critical valueHc(T0)approx 0.5 TK, where T<missing VAR>K is the Kondo scale.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 0.5, 'T', 0]

K
###Kondo effect in a magnetic field and the magnetoresistivity of Kondo alloys|T. A. Costi###
(500040, 500040)
 A splitting of the totalspectral density is found for fields larger than a critical valueHc(T0)approx 0.5 TK, where T<missing VAR>K is the Kondo scale.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[1.0, 0.5, 'T', 0]

K
###Kondo effect in a magnetic field and the magnetoresistivity of Kondo alloys|T. A. Costi###
(500046, 500046)
 A splitting of the totalspectral density is found for fields larger than a critical valueHc(T0)approx 0.5 TK, where T<missing VAR>K is the Kondo scale.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 0.5, 'T', 0]

Ce
###Kondo effect in a magnetic field and the magnetoresistivity of Kondo alloys|T. A. Costi###
(500105, 500105)
 The splittingcorrelates with a peak in the magnetoresistivity of dilute magnetic alloyswhich we calculate and compare with the experiments onrmCex<missing VAR>La1-xAl2, x<missing VAR>0.0063.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 0.5, 'T', 1]

La1-xAl2
###Kondo effect in a magnetic field and the magnetoresistivity of Kondo alloys|T. A. Costi###
(500107, 500112)
 The splittingcorrelates with a peak in the magnetoresistivity of dilute magnetic alloyswhich we calculate and compare with the experiments onrmCex<missing VAR>La1-xAl2, x<missing VAR>0.0063.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[68.0, 0.5, 'T', 1]

GaAs/AlGaAs
###Magnetoresistance and electronic structure of asymmetric GaAs/AlGaAs double quantum wells in the in-plane/tilted magnetic field|O. N. Makarovskii,L. Smrcka,P. Vasek,T. Jungwirth,M. Cukr,L. Jansen###
(500167, 500172)
Magnetoresistance and electronic structure of asymmetric GaAs/AlGaAs double quantum wells in the in-plane/tilted magnetic field.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

GaAs
###Magnetoresistance and electronic structure of asymmetric GaAs/AlGaAs double quantum wells in the in-plane/tilted magnetic field|O. N. Makarovskii,L. Smrcka,P. Vasek,T. Jungwirth,M. Cukr,L. Jansen###
(500219, 500220)
 Bilayer two-dimensional electron systems formed by a thin barrier in the GaAsbuffer of a standard heterostructure were investigated by magnetotransportmeasurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magnetoresistance and electronic structure of asymmetric GaAs/AlGaAs double quantum wells in the in-plane/tilted magnetic field|O. N. Makarovskii,L. Smrcka,P. Vasek,T. Jungwirth,M. Cukr,L. Jansen###
(500245, 500245)
 In magnetic fields oriented parallel to the electron layers, themagnetoresistance exhibits an oscillation associated with the depopulation ofthe higher occupied subband and the field-induced transition into a decoupledbilayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pr0.5Ca0.5MnO3
###Spectacular decrease of the melting magnetic field in the charge-ordered state of tensile Pr0.5Ca0.5MnO3 films|W. Prellier,A. M. Haghiri-Gosnet,B. Mercey,Ph. Lecoeur,M. Hervieu,Ch. Simon,B. Raveau###
(500461, 500467)
Spectacular decrease of the melting magnetic field in the charge-ordered state of tensile Pr0.5Ca0.5MnO3 films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 240, 'K', 1],[27.0, 7, 'T', 1]

Pr0.5Ca0.5MnO3
###Spectacular decrease of the melting magnetic field in the charge-ordered state of tensile Pr0.5Ca0.5MnO3 films|W. Prellier,A. M. Haghiri-Gosnet,B. Mercey,Ph. Lecoeur,M. Hervieu,Ch. Simon,B. Raveau###
(500503, 500509)
 An insulator to metal transition below 240K is induced by applying a 7Tmagnetic field in Pr0.5Ca0.5MnO3 thin films grown by the Pulsed LaserDeposition technique on (100) SrTiO3 substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 240, 'K', 0],[9.0, 7, 'T', 0]

SrTiO3
###Spectacular decrease of the melting magnetic field in the charge-ordered state of tensile Pr0.5Ca0.5MnO3 films|W. Prellier,A. M. Haghiri-Gosnet,B. Mercey,Ph. Lecoeur,M. Hervieu,Ch. Simon,B. Raveau###
(500536, 500539)
 An insulator to metal transition below 240K is induced by applying a 7Tmagnetic field in Pr0.5Ca0.5MnO3 thin films grown by the Pulsed LaserDeposition technique on (100) SrTiO3 substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 240, 'K', 0],[42.0, 7, 'T', 0]

SKK
###A proper ballistic calculation of tunneling conductance for real junctions|P. M. Levy,K. Wang,P. H. Dederichs,C. Heide,S. Zhang,L. Szunyogh,P. Weinberger###
(500715, 500717)
 Employing an ab initio Screened Korringa-Kohn-Rostoker (SKKR) band structuremethod for a metal-vacuum-metal junction, we find that the tunnel conductanceis different when it is calculated across the barrier and far from it.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###A proper ballistic calculation of tunneling conductance for real junctions|P. M. Levy,K. Wang,P. H. Dederichs,C. Heide,S. Zhang,L. Szunyogh,P. Weinberger###
(500898, 500898)
 In this case thepredicted tunneling magnetoresistance is larger.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co/Cu
###Impurity Scattering from $δ$-layers in Giant Magnetoresistance Systems|C. H. Marrows,B. J. Hickey###
(500954, 500956)
 The properties of the archetypal Co/Cu giant magnetoresistance (GMR)spin-valve structure have been modified by the insertion of very thin(sub-monolayer) delta-layers of various elements at different points withinthe Co layers, and at the Co/Cu interface.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Co
###Impurity Scattering from $δ$-layers in Giant Magnetoresistance Systems|C. H. Marrows,B. J. Hickey###
(501021, 501021)
 The properties of the archetypal Co/Cu giant magnetoresistance (GMR)spin-valve structure have been modified by the insertion of very thin(sub-monolayer) delta-layers of various elements at different points withinthe Co layers, and at the Co/Cu interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co/Cu
###Impurity Scattering from $δ$-layers in Giant Magnetoresistance Systems|C. H. Marrows,B. J. Hickey###
(501032, 501034)
 The properties of the archetypal Co/Cu giant magnetoresistance (GMR)spin-valve structure have been modified by the insertion of very thin(sub-monolayer) delta-layers of various elements at different points withinthe Co layers, and at the Co/Cu interface.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

YBa2Cu3O6
###Comment on ``Magnetoresistance Anomalies in Antiferromagnetic YBa$_2$Cu$_3$O$_{6+x}$: Fingerprints of Charged Stripes''|Andras Janossy,Ferenc Simon,Titusz Feher###
(501172, 501178)
Comment on Magnetoresistance Anomalies in Antiferromagnetic YBa2Cu3O6x<missing VAR> Fingerprints of Charged Stripes.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Comment on ``Magnetoresistance Anomalies in Antiferromagnetic YBa$_2$Cu$_3$O$_{6+x}$: Fingerprints of Charged Stripes''|Andras Janossy,Ferenc Simon,Titusz Feher###
(501190, 501190)
 In a recent Letter Ando et al (cond-mat/9905071) discovered an anomalousmagnetoresistance(MR) in hole doped antiferromagnetic YBa2Cu3O6x<missing VAR>,which they attributed to charged stripes, i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YBa2Cu3O6
###Comment on ``Magnetoresistance Anomalies in Antiferromagnetic YBa$_2$Cu$_3$O$_{6+x}$: Fingerprints of Charged Stripes''|Andras Janossy,Ferenc Simon,Titusz Feher###
(501233, 501239)
 In a recent Letter Ando et al (cond-mat/9905071) discovered an anomalousmagnetoresistance(MR) in hole doped antiferromagnetic YBa2Cu3O6x<missing VAR>,which they attributed to charged stripes, i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Comment on ``Magnetoresistance Anomalies in Antiferromagnetic YBa$_2$Cu$_3$O$_{6+x}$: Fingerprints of Charged Stripes''|Andras Janossy,Ferenc Simon,Titusz Feher###
(501277, 501277)
 In this Comment we show that the experiments, albeit being interesting,do not prove the existence of stripes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Comment on ``Magnetoresistance Anomalies in Antiferromagnetic YBa$_2$Cu$_3$O$_{6+x}$: Fingerprints of Charged Stripes''|Andras Janossy,Ferenc Simon,Titusz Feher###
(501317, 501317)
 In our view the anomalous behavior isdue to an (a,b) plane anisotropy of the resistivity in the bulk and to amagnetic field dependent antiferromagnetic (AF) domain structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Comment on ``Magnetoresistance Anomalies in Antiferromagnetic YBa$_2$Cu$_3$O$_{6+x}$: Fingerprints of Charged Stripes''|Andras Janossy,Ferenc Simon,Titusz Feher###
(501377, 501377)
 In our view the anomalous behavior isdue to an (a,b) plane anisotropy of the resistivity in the bulk and to amagnetic field dependent antiferromagnetic (AF) domain structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Detecting Gapless Excitations above Ferromagnetic Domain Walls|Tohru Koma,Masanori Yamanaka###
(501704, 501704)
 In a two or three dimensional ferromagnetic XXZ model, a low energyexcitation mode above a magnetic domain wall is gapless, whereas all of theusual spin wave excitations moving around the whole crystal are gapful.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La1-xSr
###Mesoscale magnetism at the grain boundaries in colossal magnetoresistive films|Yeong-Ah Soh,G. Aeppli,N. D. Mathur,M. G. Blamire###
(501983, 501987)
 We report the discovery of mesoscale regions with distinctive magneticproperties in epitaxial La1-xSrx<missing VAR>MnO3 films which exhibittunneling-like magnetoresistance across grain boundaries.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[83.0, 20, 'K', 1]

MnO3
###Mesoscale magnetism at the grain boundaries in colossal magnetoresistive films|Yeong-Ah Soh,G. Aeppli,N. D. Mathur,M. G. Blamire###
(501989, 501991)
 We report the discovery of mesoscale regions with distinctive magneticproperties in epitaxial La1-xSrx<missing VAR>MnO3 films which exhibittunneling-like magnetoresistance across grain boundaries.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 20, 'K', 1]

As
###Exclusion of quantum coherence as the origin of the 2D metallic state in high-mobility silicon inversion layers|G. Brunthaler,A. Prinz,G. Bauer,V. M. Pudalov###
(502372, 502372)
 As the strong resistivity drop occurs in the Drude regime, the apparentmetallic behavior can not be caused by quantum coherent effects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 2, 'D', 4]

La0.5Pb0.5MnO3
###A nature of low-temperature resistivity minimum in ceramic manganites|E. Rozenberg,M. Auslender,I. Felner,G. Gorodetsky###
(502473, 502479)
 Measurements of magnetoresistance and magnetization were carried out onceramic samples of La0.5Pb0.5MnO3 and La0.5Pb0.5MnO3,containing 10 at.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 10, 'at', 0],[70.0, 25, 'K', 2],[73.0, 30, 'K', 2]

La0.5Pb0.5MnO3
###A nature of low-temperature resistivity minimum in ceramic manganites|E. Rozenberg,M. Auslender,I. Felner,G. Gorodetsky###
(502483, 502489)
 Measurements of magnetoresistance and magnetization were carried out onceramic samples of La0.5Pb0.5MnO3 and La0.5Pb0.5MnO3,containing 10 at.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 10, 'at', 0],[60.0, 25, 'K', 2],[63.0, 30, 'K', 2]

Ag
###A nature of low-temperature resistivity minimum in ceramic manganites|E. Rozenberg,M. Auslender,I. Felner,G. Gorodetsky###
(502499, 502499)
 % Ag in a dispersed form.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 10, 'at', 1],[50.0, 25, 'K', 1],[53.0, 30, 'K', 1]

La
###Critical Temperature of Ferromagnetic Transition in Three-Dimensional Double-Exchange Models|Yukitoshi Motome,Nobuo Furukawa###
(502829, 502829)
 By choosing appropriate parameters, obtained values of T<missing VAR>rm c<missing VAR>quantitatively agree with experiments for the ferromagnetic metal regime of(La,Sr)MnO3, which is a typical perovskite manganite showing colossalmagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr
###Critical Temperature of Ferromagnetic Transition in Three-Dimensional Double-Exchange Models|Yukitoshi Motome,Nobuo Furukawa###
(502831, 502831)
 By choosing appropriate parameters, obtained values of T<missing VAR>rm c<missing VAR>quantitatively agree with experiments for the ferromagnetic metal regime of(La,Sr)MnO3, which is a typical perovskite manganite showing colossalmagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnO3
###Critical Temperature of Ferromagnetic Transition in Three-Dimensional Double-Exchange Models|Yukitoshi Motome,Nobuo Furukawa###
(502833, 502835)
 By choosing appropriate parameters, obtained values of T<missing VAR>rm c<missing VAR>quantitatively agree with experiments for the ferromagnetic metal regime of(La,Sr)MnO3, which is a typical perovskite manganite showing colossalmagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YBa2Cu3O6
###Origin of Magnetoresistance Anomalies in Antiferromagnetic YBa_{2}Cu_{3}O_{6+x}|A. S. Moskvin,Yu. D. Panov###
(502927, 502933)
Origin of Magnetoresistance Anomalies in Antiferromagnetic YBa2Cu3O6x<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YBa2Cu3O6
###Origin of Magnetoresistance Anomalies in Antiferromagnetic YBa_{2}Cu_{3}O_{6+x}|A. S. Moskvin,Yu. D. Panov###
(502964, 502970)
 Specific d<missing VAR>-wave angular dependence of the in-plane magnetoresistence inantiferromagnetic tetragonal YBa2Cu3O6x<missing VAR> (x<missing VAR>0.3) on orientation of theexternal magnetic field in (a,b) plane is assigned to the effective holetransport through low lying excited purely oxygen doublet O2peu<missing VAR> state, not theground b1g(dx2-y<missing VAR>2) state.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O2
###Origin of Magnetoresistance Anomalies in Antiferromagnetic YBa_{2}Cu_{3}O_{6+x}|A. S. Moskvin,Yu. D. Panov###
(503032, 503033)
 Specific d<missing VAR>-wave angular dependence of the in-plane magnetoresistence inantiferromagnetic tetragonal YBa2Cu3O6x<missing VAR> (x<missing VAR>0.3) on orientation of theexternal magnetic field in (a,b) plane is assigned to the effective holetransport through low lying excited purely oxygen doublet O2peu<missing VAR> state, not theground b1g(dx2-y<missing VAR>2) state.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CuO4
###Origin of Magnetoresistance Anomalies in Antiferromagnetic YBa_{2}Cu_{3}O_{6+x}|A. S. Moskvin,Yu. D. Panov###
(503111, 503113)
 External magnetic field determines theorientation of the strong exchange field for the spin-tripletb1geu3Eu state of the hole CuO4 center and due to the spin-orbitalcoupling results in either orbital polarization of the Eu doublet giving riseto the spatial anisotropy of the hole transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.5Ca0.5MnO3
###Magnetoresistance induced by low-field control of phase separation in La0.5Ca0.5MnO3|F. Parisi,P. Levy,L. Ghivelder,G. Polla,D. Vega###
(503225, 503231)
Magnetoresistance induced by low-field control of phase separation in La0.5Ca0.5MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.5Ca0.5MnO3
###Magnetoresistance induced by low-field control of phase separation in La0.5Ca0.5MnO3|F. Parisi,P. Levy,L. Ghivelder,G. Polla,D. Vega###
(503291, 503297)
 The different behaviorobtained in samples of La0.5Ca0.5MnO3 related to the way in which the low fieldis applied is consistent with a picture of changes in the metallic fractioninduced by the magnetic field in a field-cooled cycle.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Large two-level magnetoresistance effect in doped manganite grain boundary junctions|J. B. Philipp,C. Hoefener,S. Thienhaus,J. Klein,L. Alff,R. Gross###
(503579, 503579)
 For magneticfields H applied parallel to the grain boundary barrier, an ideal two-levelresistance switching behavior with sharp transitions is observed with a TMReffect of up to 300% at 4.2 K and still above 100% at 77 K.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 300, '%', 0],[63.0, 4.2, 'K', 0],[71.0, 100, '%', 0],[75.0, 77, 'K', 0]

H
###Large two-level magnetoresistance effect in doped manganite grain boundary junctions|J. B. Philipp,C. Hoefener,S. Thienhaus,J. Klein,L. Alff,R. Gross###
(503666, 503666)
 Varying the anglebetween H and the grain boundary results in differently shaped resistance vs Hcurves.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 300, '%', 1],[24.0, 4.2, 'K', 1],[16.0, 100, '%', 1],[12.0, 77, 'K', 1]

H
###Large two-level magnetoresistance effect in doped manganite grain boundary junctions|J. B. Philipp,C. Hoefener,S. Thienhaus,J. Klein,L. Alff,R. Gross###
(503688, 503688)
 Varying the anglebetween H and the grain boundary results in differently shaped resistance vs Hcurves.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 300, '%', 1],[46.0, 4.2, 'K', 1],[38.0, 100, '%', 1],[34.0, 77, 'K', 1]

Si
###The effect of a parallel magnetic field on the Boltzmann conductivity and the Hall coefficient of a disordered two dimensional Fermi liquid|Igor F. Herbut###
(503955, 503955)
 AHartree-Fock calculation for the weakly disordered Hubbard model whichqualitatively describes the experiments on the diagonal and the Hallresisitivity in the finite-temperature metallic state in the high mobility Siinversion layers is presented.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 2, 'D', 1]

In
###Quantum Hall Ferromagnetism in a Two-Dimensional Electron System|J. Eom,H. Cho,W. Kang,K. L. Campman,A. C. Gossard,M. Bichler,W. Wegscheider###
(504119, 504119)
 In correlation with the hysteresis, magnetoresistance can eithergrow or decay logarithmically in time with remarkable persistence and does notsaturate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Quantum Hall Ferromagnetism in a Two-Dimensional Electron System|J. Eom,H. Cho,W. Kang,K. L. Campman,A. C. Gossard,M. Bichler,W. Wegscheider###
(504165, 504165)
 In contrast to the established models of relaxation, the relaxationrate exhibits an anomalous divergence as temperature is reduced.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.7Sr0.3MnO3/SrTiO3
###Current-induced conductance switching in epitaxial La0.7Sr0.3MnO3/SrTiO3 multilayers|K. Doerr,K. -H. Mueller,T. Walter,M. Sahana,D. Eckert,K. Nenkov,L. Schultz,K. Brand,M. Lehmann###
(504261, 504272)
Current-induced conductance switching in epitaxial La0.7Sr0.3MnO3/SrTiO3 multilayers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[55.0, 3, 'nm', 1]

La0.7Sr0.3MnO3/Sr
###Current-induced conductance switching in epitaxial La0.7Sr0.3MnO3/SrTiO3 multilayers|K. Doerr,K. -H. Mueller,T. Walter,M. Sahana,D. Eckert,K. Nenkov,L. Schultz,K. Brand,M. Lehmann###
(504305, 504313)
 We report on the non-linear in-plane electrical transport in coherently grown[La0.7Sr0.3MnO3/SrTiO3] multilayers with ultrathin (< 3 nm) single layers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[14.0, 3, 'nm', 0]

O3
###Current-induced conductance switching in epitaxial La0.7Sr0.3MnO3/SrTiO3 multilayers|K. Doerr,K. -H. Mueller,T. Walter,M. Sahana,D. Eckert,K. Nenkov,L. Schultz,K. Brand,M. Lehmann###
(504315, 504316)
 We report on the non-linear in-plane electrical transport in coherently grown[La0.7Sr0.3MnO3/SrTiO3] multilayers with ultrathin (< 3 nm) single layers.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 3, 'nm', 0]

S
###Tunneling magnetoresistance in diluted magnetic semiconductor tunnel junctions|Pin Lyu,Kyungsun Moon###
(504577, 504577)
 Using the spin-polarized tunneling model and taking into account the basicphysics of ferromagnetic semiconductors, we study the temperature dependence ofthe tunneling magnetoresistance (TMR) in the diluted magnetic semiconductor(DMS) trilayer heterostructure system (Ga,Mn)As/AlAs/(Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###Tunneling magnetoresistance in diluted magnetic semiconductor tunnel junctions|Pin Lyu,Kyungsun Moon###
(504587, 504587)
 Using the spin-polarized tunneling model and taking into account the basicphysics of ferromagnetic semiconductors, we study the temperature dependence ofthe tunneling magnetoresistance (TMR) in the diluted magnetic semiconductor(DMS) trilayer heterostructure system (Ga,Mn)As/AlAs/(Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Tunneling magnetoresistance in diluted magnetic semiconductor tunnel junctions|Pin Lyu,Kyungsun Moon###
(504589, 504589)
 Using the spin-polarized tunneling model and taking into account the basicphysics of ferromagnetic semiconductors, we study the temperature dependence ofthe tunneling magnetoresistance (TMR) in the diluted magnetic semiconductor(DMS) trilayer heterostructure system (Ga,Mn)As/AlAs/(Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As/AlAs
###Tunneling magnetoresistance in diluted magnetic semiconductor tunnel junctions|Pin Lyu,Kyungsun Moon###
(504591, 504594)
 Using the spin-polarized tunneling model and taking into account the basicphysics of ferromagnetic semiconductors, we study the temperature dependence ofthe tunneling magnetoresistance (TMR) in the diluted magnetic semiconductor(DMS) trilayer heterostructure system (Ga,Mn)As/AlAs/(Ga,Mn)As.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Ga
###Tunneling magnetoresistance in diluted magnetic semiconductor tunnel junctions|Pin Lyu,Kyungsun Moon###
(504597, 504597)
 Using the spin-polarized tunneling model and taking into account the basicphysics of ferromagnetic semiconductors, we study the temperature dependence ofthe tunneling magnetoresistance (TMR) in the diluted magnetic semiconductor(DMS) trilayer heterostructure system (Ga,Mn)As/AlAs/(Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Tunneling magnetoresistance in diluted magnetic semiconductor tunnel junctions|Pin Lyu,Kyungsun Moon###
(504599, 504599)
 Using the spin-polarized tunneling model and taking into account the basicphysics of ferromagnetic semiconductors, we study the temperature dependence ofthe tunneling magnetoresistance (TMR) in the diluted magnetic semiconductor(DMS) trilayer heterostructure system (Ga,Mn)As/AlAs/(Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Tunneling magnetoresistance in diluted magnetic semiconductor tunnel junctions|Pin Lyu,Kyungsun Moon###
(504601, 504601)
 Using the spin-polarized tunneling model and taking into account the basicphysics of ferromagnetic semiconductors, we study the temperature dependence ofthe tunneling magnetoresistance (TMR) in the diluted magnetic semiconductor(DMS) trilayer heterostructure system (Ga,Mn)As/AlAs/(Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Tunneling magnetoresistance in diluted magnetic semiconductor tunnel junctions|Pin Lyu,Kyungsun Moon###
(504701, 504701)
 It is also shown that the TMR ratiohas a strong dependence on both the itinerant-carrier density and the magneticion density in the DMS electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Competition of Zener and polaron phases in doped CMR manganites|A. Weisse,J. Loos,H. Fehske###
(504768, 504768)
Competition of Zener and polaron phases in doped CMR manganites.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Competition of Zener and polaron phases in doped CMR manganites|A. Weisse,J. Loos,H. Fehske###
(504851, 504851)
 Inspired by the strong experimental evidence for the coexistence of localizedand itinerant charge carriers close to the metal-insulator transition in theferromagnetic phase of colossal magnetoresistive manganese perovskites, for atheoretical description of the CMR transition we propose a two-phase scenariowith percolative characteristics between equal-density polaron and Zenerband-electron states.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Width of the Zero-Field Superconducting Resistive Transition in the Vicinity of the Localization Threshold|V. F. Gantmakher,M. V. Golubkov###
(505040, 505040)
 Resistive superconducting zero-field transition in amorphous In-O films instates from the vicinity of the insulator-superconductor transition is analyzedin terms of two characteristic temperatures the upper one, Tc0, where thefinite amplitude of the order parameter is established and the lower one,Tc, where the phase ordering takes place.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 0, ',', 0],[135.0, 0, ',', 1]

O
###Width of the Zero-Field Superconducting Resistive Transition in the Vicinity of the Localization Threshold|V. F. Gantmakher,M. V. Golubkov###
(505042, 505042)
 Resistive superconducting zero-field transition in amorphous In-O films instates from the vicinity of the insulator-superconductor transition is analyzedin terms of two characteristic temperatures the upper one, Tc0, where thefinite amplitude of the order parameter is established and the lower one,Tc, where the phase ordering takes place.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 0, ',', 0],[133.0, 0, ',', 1]

C
###Percolative conductivity and critical exponents in mixed-valent manganites|Ye Xiong,Shun-Qing Shen,X. C. Xie###
(505272, 505272)
 Recent experiments have shown that some colossal magnetoresistance (CMR)materials exhibit a percolation transition.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Percolative conductivity and critical exponents in mixed-valent manganites|Ye Xiong,Shun-Qing Shen,X. C. Xie###
(505342, 505342)
 This finding promptedus to carry out theoretical studies of percolation transition in CMR systems.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.7Sr0.3MnO3
###Substrate-effect on the magnetic microstructure of La$_{0.7}$Sr$_{0.3}$MnO$_{3}$ thin films studied by magnetic force microscopy|R. Desfeux,S. Bailleul,A. Da Costa,W. Prellier,A. M. Haghiri-Gosnet###
(505800, 505806)
Substrate-effect on the magnetic microstructure of La0.7Sr0.3MnO3 thin films studied by magnetic force microscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Substrate-effect on the magnetic microstructure of La$_{0.7}$Sr$_{0.3}$MnO$_{3}$ thin films studied by magnetic force microscopy|R. Desfeux,S. Bailleul,A. Da Costa,W. Prellier,A. M. Haghiri-Gosnet###
(505828, 505828)
 Colossal magnetoresistive (CMR) La0.7Sr0.3MnO3 (LSMO) thinfilms have been grown under tensile strains on (100)-SrTiO3 substrates andcompressive strains on (100)-LaAlO3 and (110)-NdGaO3 substrates bypulsed laser deposition.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.7Sr0.3MnO3
###Substrate-effect on the magnetic microstructure of La$_{0.7}$Sr$_{0.3}$MnO$_{3}$ thin films studied by magnetic force microscopy|R. Desfeux,S. Bailleul,A. Da Costa,W. Prellier,A. M. Haghiri-Gosnet###
(505833, 505839)
 Colossal magnetoresistive (CMR) La0.7Sr0.3MnO3 (LSMO) thinfilms have been grown under tensile strains on (100)-SrTiO3 substrates andcompressive strains on (100)-LaAlO3 and (110)-NdGaO3 substrates bypulsed laser deposition.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Substrate-effect on the magnetic microstructure of La$_{0.7}$Sr$_{0.3}$MnO$_{3}$ thin films studied by magnetic force microscopy|R. Desfeux,S. Bailleul,A. Da Costa,W. Prellier,A. M. Haghiri-Gosnet###
(505845, 505845)
 Colossal magnetoresistive (CMR) La0.7Sr0.3MnO3 (LSMO) thinfilms have been grown under tensile strains on (100)-SrTiO3 substrates andcompressive strains on (100)-LaAlO3 and (110)-NdGaO3 substrates bypulsed laser deposition.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Substrate-effect on the magnetic microstructure of La$_{0.7}$Sr$_{0.3}$MnO$_{3}$ thin films studied by magnetic force microscopy|R. Desfeux,S. Bailleul,A. Da Costa,W. Prellier,A. M. Haghiri-Gosnet###
(505871, 505874)
 Colossal magnetoresistive (CMR) La0.7Sr0.3MnO3 (LSMO) thinfilms have been grown under tensile strains on (100)-SrTiO3 substrates andcompressive strains on (100)-LaAlO3 and (110)-NdGaO3 substrates bypulsed laser deposition.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaAlO3
###Substrate-effect on the magnetic microstructure of La$_{0.7}$Sr$_{0.3}$MnO$_{3}$ thin films studied by magnetic force microscopy|R. Desfeux,S. Bailleul,A. Da Costa,W. Prellier,A. M. Haghiri-Gosnet###
(505891, 505894)
 Colossal magnetoresistive (CMR) La0.7Sr0.3MnO3 (LSMO) thinfilms have been grown under tensile strains on (100)-SrTiO3 substrates andcompressive strains on (100)-LaAlO3 and (110)-NdGaO3 substrates bypulsed laser deposition.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NdGaO3
###Substrate-effect on the magnetic microstructure of La$_{0.7}$Sr$_{0.3}$MnO$_{3}$ thin films studied by magnetic force microscopy|R. Desfeux,S. Bailleul,A. Da Costa,W. Prellier,A. M. Haghiri-Gosnet###
(505902, 505905)
 Colossal magnetoresistive (CMR) La0.7Sr0.3MnO3 (LSMO) thinfilms have been grown under tensile strains on (100)-SrTiO3 substrates andcompressive strains on (100)-LaAlO3 and (110)-NdGaO3 substrates bypulsed laser deposition.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Substrate-effect on the magnetic microstructure of La$_{0.7}$Sr$_{0.3}$MnO$_{3}$ thin films studied by magnetic force microscopy|R. Desfeux,S. Bailleul,A. Da Costa,W. Prellier,A. M. Haghiri-Gosnet###
(505981, 505984)
  Using magnetic force microscopy (MFM), a feather-like magnetic pattern,characteristic of films with an in-plane magnetization, is observed for filmsdeposited on both SrTiO3 and NdGaO3 while a bubble magneticpattern, typical of films with an out-of plane magnetization, is recorded forLaAlO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NdGaO3
###Substrate-effect on the magnetic microstructure of La$_{0.7}$Sr$_{0.3}$MnO$_{3}$ thin films studied by magnetic force microscopy|R. Desfeux,S. Bailleul,A. Da Costa,W. Prellier,A. M. Haghiri-Gosnet###
(505988, 505991)
  Using magnetic force microscopy (MFM), a feather-like magnetic pattern,characteristic of films with an in-plane magnetization, is observed for filmsdeposited on both SrTiO3 and NdGaO3 while a bubble magneticpattern, typical of films with an out-of plane magnetization, is recorded forLaAlO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaAlO3
###Substrate-effect on the magnetic microstructure of La$_{0.7}$Sr$_{0.3}$MnO$_{3}$ thin films studied by magnetic force microscopy|R. Desfeux,S. Bailleul,A. Da Costa,W. Prellier,A. M. Haghiri-Gosnet###
(506031, 506034)
  Using magnetic force microscopy (MFM), a feather-like magnetic pattern,characteristic of films with an in-plane magnetization, is observed for filmsdeposited on both SrTiO3 and NdGaO3 while a bubble magneticpattern, typical of films with an out-of plane magnetization, is recorded forLaAlO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr2FeMoO6
###A new class of magnetic materials: Sr2FeMoO6 and related compounds|D. D. Sarma###
(506111, 506116)
A new class of magnetic materials Sr2FeMoO6 and related compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BBO6
###A new class of magnetic materials: Sr2FeMoO6 and related compounds|D. D. Sarma###
(506144, 506147)
 Ordered double perovskite oxides of the general formula, A2BBO6, have beenknown for several decades to have interesting electronic and magneticproperties.
Featurization terminated normally.
0,0,0,0,0.25,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr2FeMoO6
###A new class of magnetic materials: Sr2FeMoO6 and related compounds|D. D. Sarma###
(506218, 506223)
 However, a recent report of a spectacular negativemagnetoresistance effect in a specific member of this family, namely Sr2FeMoO6,has brought this class of compounds under intense scrutiny.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr2Fe
###Strong ferromangnetism and weak antiferroamgnetism in double perovskites: Sr$_2$Fe{/it M}O$_6$ ({/it M}=Mo, W and Re)|Z. Fang,K. Terakura,J. Kanamori###
(506398, 506400)
Strong ferromangnetism and weak antiferroamgnetism in double perovskites Sr2Fe/it M<missing VAR>O6 (/it M<missing VAR>Mo, W and Re).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 401, 'K', 1]

O6
###Strong ferromangnetism and weak antiferroamgnetism in double perovskites: Sr$_2$Fe{/it M}O$_6$ ({/it M}=Mo, W and Re)|Z. Fang,K. Terakura,J. Kanamori###
(506405, 506406)
Strong ferromangnetism and weak antiferroamgnetism in double perovskites Sr2Fe/it M<missing VAR>O6 (/it M<missing VAR>Mo, W and Re).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 401, 'K', 1]

Mo
###Strong ferromangnetism and weak antiferroamgnetism in double perovskites: Sr$_2$Fe{/it M}O$_6$ ({/it M}=Mo, W and Re)|Z. Fang,K. Terakura,J. Kanamori###
(506413, 506413)
Strong ferromangnetism and weak antiferroamgnetism in double perovskites Sr2Fe/it M<missing VAR>O6 (/it M<missing VAR>Mo, W and Re).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 401, 'K', 1]

W
###Strong ferromangnetism and weak antiferroamgnetism in double perovskites: Sr$_2$Fe{/it M}O$_6$ ({/it M}=Mo, W and Re)|Z. Fang,K. Terakura,J. Kanamori###
(506416, 506416)
Strong ferromangnetism and weak antiferroamgnetism in double perovskites Sr2Fe/it M<missing VAR>O6 (/it M<missing VAR>Mo, W and Re).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 401, 'K', 1]

Re
###Strong ferromangnetism and weak antiferroamgnetism in double perovskites: Sr$_2$Fe{/it M}O$_6$ ({/it M}=Mo, W and Re)|Z. Fang,K. Terakura,J. Kanamori###
(506420, 506420)
Strong ferromangnetism and weak antiferroamgnetism in double perovskites Sr2Fe/it M<missing VAR>O6 (/it M<missing VAR>Mo, W and Re).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 401, 'K', 1]

Sr2Fe
###Strong ferromangnetism and weak antiferroamgnetism in double perovskites: Sr$_2$Fe{/it M}O$_6$ ({/it M}=Mo, W and Re)|Z. Fang,K. Terakura,J. Kanamori###
(506428, 506430)
 Double perovskites Sr2FeM<missing VAR>O6 (M<missing VAR>Mo and Re) exhibit significant colossalmagnetoresistance even at room temperature due to the high Curie Temperature(419K and 401K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 401, 'K', 0]

O6
###Strong ferromangnetism and weak antiferroamgnetism in double perovskites: Sr$_2$Fe{/it M}O$_6$ ({/it M}=Mo, W and Re)|Z. Fang,K. Terakura,J. Kanamori###
(506432, 506433)
 Double perovskites Sr2FeM<missing VAR>O6 (M<missing VAR>Mo and Re) exhibit significant colossalmagnetoresistance even at room temperature due to the high Curie Temperature(419K and 401K).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 401, 'K', 0]

Mo
###Strong ferromangnetism and weak antiferroamgnetism in double perovskites: Sr$_2$Fe{/it M}O$_6$ ({/it M}=Mo, W and Re)|Z. Fang,K. Terakura,J. Kanamori###
(506437, 506437)
 Double perovskites Sr2FeM<missing VAR>O6 (M<missing VAR>Mo and Re) exhibit significant colossalmagnetoresistance even at room temperature due to the high Curie Temperature(419K and 401K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 401, 'K', 0]

Re
###Strong ferromangnetism and weak antiferroamgnetism in double perovskites: Sr$_2$Fe{/it M}O$_6$ ({/it M}=Mo, W and Re)|Z. Fang,K. Terakura,J. Kanamori###
(506441, 506441)
 Double perovskites Sr2FeM<missing VAR>O6 (M<missing VAR>Mo and Re) exhibit significant colossalmagnetoresistance even at room temperature due to the high Curie Temperature(419K and 401K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 401, 'K', 0]

K
###Strong ferromangnetism and weak antiferroamgnetism in double perovskites: Sr$_2$Fe{/it M}O$_6$ ({/it M}=Mo, W and Re)|Z. Fang,K. Terakura,J. Kanamori###
(506476, 506476)
 Double perovskites Sr2FeM<missing VAR>O6 (M<missing VAR>Mo and Re) exhibit significant colossalmagnetoresistance even at room temperature due to the high Curie Temperature(419K and 401K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 401, 'K', 0]

(Fe)
###Strong ferromangnetism and weak antiferroamgnetism in double perovskites: Sr$_2$Fe{/it M}O$_6$ ({/it M}=Mo, W and Re)|Z. Fang,K. Terakura,J. Kanamori###
(506516, 506518)
 However, such a high Curie Temperature is puzzling, given thelarge separation between magnetic elements (Fe).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 401, 'K', 1]

W
###Strong ferromangnetism and weak antiferroamgnetism in double perovskites: Sr$_2$Fe{/it M}O$_6$ ({/it M}=Mo, W and Re)|Z. Fang,K. Terakura,J. Kanamori###
(506527, 506527)
 Moreover, with M<missing VAR>W, theelectronic and magnetic properties suddenly change to insulating andantiferromagnetic with the Ne<missing VAR>el temperature of only 16sim37 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 401, 'K', 2]

N
###Strong ferromangnetism and weak antiferroamgnetism in double perovskites: Sr$_2$Fe{/it M}O$_6$ ({/it M}=Mo, W and Re)|Z. Fang,K. Terakura,J. Kanamori###
(506558, 506558)
 Moreover, with M<missing VAR>W, theelectronic and magnetic properties suddenly change to insulating andantiferromagnetic with the Ne<missing VAR>el temperature of only 16sim37 K.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 401, 'K', 2]

K
###Strong ferromangnetism and weak antiferroamgnetism in double perovskites: Sr$_2$Fe{/it M}O$_6$ ({/it M}=Mo, W and Re)|Z. Fang,K. Terakura,J. Kanamori###
(506572, 506572)
 Moreover, with M<missing VAR>W, theelectronic and magnetic properties suddenly change to insulating andantiferromagnetic with the Ne<missing VAR>el temperature of only 16sim37 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 401, 'K', 2]

Mo
###Strong ferromangnetism and weak antiferroamgnetism in double perovskites: Sr$_2$Fe{/it M}O$_6$ ({/it M}=Mo, W and Re)|Z. Fang,K. Terakura,J. Kanamori###
(506615, 506615)
 Based ondetailed electronic structure calculations, a new mechanism is proposed whichstabilizes the strong ferromagnetic state for M<missing VAR>Mo and Re and is passivated forM<missing VAR>W.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 401, 'K', 3]

Re
###Strong ferromangnetism and weak antiferroamgnetism in double perovskites: Sr$_2$Fe{/it M}O$_6$ ({/it M}=Mo, W and Re)|Z. Fang,K. Terakura,J. Kanamori###
(506619, 506619)
 Based ondetailed electronic structure calculations, a new mechanism is proposed whichstabilizes the strong ferromagnetic state for M<missing VAR>Mo and Re and is passivated forM<missing VAR>W.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 401, 'K', 3]

W
###Strong ferromangnetism and weak antiferroamgnetism in double perovskites: Sr$_2$Fe{/it M}O$_6$ ({/it M}=Mo, W and Re)|Z. Fang,K. Terakura,J. Kanamori###
(506631, 506631)
 Based ondetailed electronic structure calculations, a new mechanism is proposed whichstabilizes the strong ferromagnetic state for M<missing VAR>Mo and Re and is passivated forM<missing VAR>W.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 401, 'K', 3]

In
###Orbital effects in manganites|D. I. Khomskii###
(506895, 506895)
 In this paper I give a short review of some properties of the colossalmagnetoresistance manganites, connected with the orbital degrees of freedom.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Orbital effects in manganites|D. I. Khomskii###
(506901, 506901)
 In this paper I give a short review of some properties of the colossalmagnetoresistance manganites, connected with the orbital degrees of freedom.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn3
###Orbital effects in manganites|D. I. Khomskii###
(506947, 506948)
Ions Mn3, present in most of these compounds, have double orbital degeneracyand are strong Jahn-Teller ions, causing structural distortions and orbitalordering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Test for interlayer coherence in a quasi-two-dimensional superconductor|John Singleton,P. A. Goddard,A. Ardavan,N. Harrison,S. J. Blundell,J. A. Schlueter,A. M. Kini###
(507193, 507193)
 Peaks in the magnetoresistivity of the layered superconductorkappa-(BEDT-TTF)2Cu(NCS)2, measured in fields leq 45 T<missing VAR> appliedwithin the layers, show that the Fermi surface is extended in the interlayerdirection and enable the interlayer transfer integral (t<missing VAR>perp approx 0.04meV) to be deduced.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 6, 't', 1]

F
###Test for interlayer coherence in a quasi-two-dimensional superconductor|John Singleton,P. A. Goddard,A. Ardavan,N. Harrison,S. J. Blundell,J. A. Schlueter,A. M. Kini###
(507200, 507200)
 Peaks in the magnetoresistivity of the layered superconductorkappa-(BEDT-TTF)2Cu(NCS)2, measured in fields leq 45 T<missing VAR> appliedwithin the layers, show that the Fermi surface is extended in the interlayerdirection and enable the interlayer transfer integral (t<missing VAR>perp approx 0.04meV) to be deduced.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 6, 't', 1]

Cu(NCS)2
###Test for interlayer coherence in a quasi-two-dimensional superconductor|John Singleton,P. A. Goddard,A. Ardavan,N. Harrison,S. J. Blundell,J. A. Schlueter,A. M. Kini###
(507203, 507209)
 Peaks in the magnetoresistivity of the layered superconductorkappa-(BEDT-TTF)2Cu(NCS)2, measured in fields leq 45 T<missing VAR> appliedwithin the layers, show that the Fermi surface is extended in the interlayerdirection and enable the interlayer transfer integral (t<missing VAR>perp approx 0.04meV) to be deduced.
Featurization terminated normally.
0,0,0,0,0,0.2857142857142857,0.2857142857142857,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 6, 't', 1]

V
###Test for interlayer coherence in a quasi-two-dimensional superconductor|John Singleton,P. A. Goddard,A. Ardavan,N. Harrison,S. J. Blundell,J. A. Schlueter,A. M. Kini###
(507279, 507279)
 Peaks in the magnetoresistivity of the layered superconductorkappa-(BEDT-TTF)2Cu(NCS)2, measured in fields leq 45 T<missing VAR> appliedwithin the layers, show that the Fermi surface is extended in the interlayerdirection and enable the interlayer transfer integral (t<missing VAR>perp approx 0.04meV) to be deduced.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 6, 't', 1]

B
###Test for interlayer coherence in a quasi-two-dimensional superconductor|John Singleton,P. A. Goddard,A. Ardavan,N. Harrison,S. J. Blundell,J. A. Schlueter,A. M. Kini###
(507328, 507328)
 However, the quasiparticle scattering rate tau-1 issuch that hbar/tau sim 6tperp, implying thatkappa-(BEDT-TTF)2Cu(NCS)2 meets the criterion used to identifyinterlayer incoherence.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 6, 't', 0]

F
###Test for interlayer coherence in a quasi-two-dimensional superconductor|John Singleton,P. A. Goddard,A. Ardavan,N. Harrison,S. J. Blundell,J. A. Schlueter,A. M. Kini###
(507335, 507335)
 However, the quasiparticle scattering rate tau-1 issuch that hbar/tau sim 6tperp, implying thatkappa-(BEDT-TTF)2Cu(NCS)2 meets the criterion used to identifyinterlayer incoherence.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 6, 't', 0]

Cu(NCS)2
###Test for interlayer coherence in a quasi-two-dimensional superconductor|John Singleton,P. A. Goddard,A. Ardavan,N. Harrison,S. J. Blundell,J. A. Schlueter,A. M. Kini###
(507338, 507344)
 However, the quasiparticle scattering rate tau-1 issuch that hbar/tau sim 6tperp, implying thatkappa-(BEDT-TTF)2Cu(NCS)2 meets the criterion used to identifyinterlayer incoherence.
Featurization terminated normally.
0,0,0,0,0,0.2857142857142857,0.2857142857142857,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 6, 't', 0]

Mn2O7
###Spectacular doping dependence of interlayer exchange and other results on spin waves in bilayer manganites|T. G. Perring,D. T. Adroja,G. Chaboussant,G. Aeppli,T. Kimura,Y. Tokura###
(507473, 507476)
 We report the measurement of spin waves in the bilayer colossalmagnetoresistive manganites La(2-2x)Sr(12x)Mn2O7 with x<missing VAR>0.30, 0.35 and 0.40.
Featurization terminated normally.
0,0,0,0,0,0,0,0.7777777777777778,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 0.3, ',', 0],[7.0, 0.35, 'and', 0],[19.0, 0.4, 'the', 1]

I
###Magnetic Diode Effect in Double Barrier Tunnel Junctions|M. Chshiev,D. Stoeffler,A. Vedyayev,K. Ounadjela###
(507784, 507784)
 For these junctions a strong asymmetric behaviour in theI-V characteristics and the tunnel magnetoresistance (TMR) is predicted whichcan be controlled by an applied magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Magnetic Diode Effect in Double Barrier Tunnel Junctions|M. Chshiev,D. Stoeffler,A. Vedyayev,K. Ounadjela###
(507786, 507786)
 For these junctions a strong asymmetric behaviour in theI-V characteristics and the tunnel magnetoresistance (TMR) is predicted whichcan be controlled by an applied magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Low Voltage I-V Characteristics in Magnetic Tunnel Junctions|G. G. Cabrera,N. Garcia###
(507909, 507909)
Low Voltage I-V Characteristics in Magnetic Tunnel Junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Low Voltage I-V Characteristics in Magnetic Tunnel Junctions|G. G. Cabrera,N. Garcia###
(507911, 507911)
Low Voltage I-V Characteristics in Magnetic Tunnel Junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Electron scattering on circular symmetric magnetic profiles in a two-dimensional electron gas|J. Reijniers,F. M. Peeters,A. Matulis###
(508520, 508520)
 We show that a nonzero Hallresistance can be obtained, although <Bz<missing VAR> >0, and that in some cases itcan even change sign as function of the Fermi energy or the magnetic fieldstrength.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 2, 'DEG', 2],[28.0, 2, 'DEG', 1],[4.0, 0, ',', 0]

TbBaCo2O5.5
###Spin state and phase competition in TbBaCo_{2}O_{5.5} and the lanthanide series LnBaCo_{2}O_{5+δ} (0<=δ<=1)|Hua Wu###
(508648, 508653)
Spin state and phase competition in TbBaCo2O5.5 and the lanthanide series LnBaCo2O5 (0<<1).
Featurization terminated normally.
0,0,0,0,0,0,0,0.5789473684210527,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.21052631578947367,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.10526315789473684,0,0,0,0,0,0,0,0,0.10526315789473684,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 0, '<', 0]

BaCo2O5
###Spin state and phase competition in TbBaCo_{2}O_{5.5} and the lanthanide series LnBaCo_{2}O_{5+δ} (0<=δ<=1)|Hua Wu###
(508664, 508668)
Spin state and phase competition in TbBaCo2O5.5 and the lanthanide series LnBaCo2O5 (0<<1).
Featurization terminated normally.
0,0,0,0,0,0,0,0.625,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 0, '<', 0]

TbBaCo2O5.5
###Spin state and phase competition in TbBaCo_{2}O_{5.5} and the lanthanide series LnBaCo_{2}O_{5+δ} (0<=δ<=1)|Hua Wu###
(508688, 508693)
 A clear physics picture of TbBaCo2O5.5 is revealed on the basis ofdensity functional theory calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5789473684210527,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.21052631578947367,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.10526315789473684,0,0,0,0,0,0,0,0,0.10526315789473684,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 0, '<', 1]

F
###Spin state and phase competition in TbBaCo_{2}O_{5.5} and the lanthanide series LnBaCo_{2}O_{5+δ} (0<=δ<=1)|Hua Wu###
(508723, 508723)
 An antiferromagnetic (AFM)superexchange coupling between the almost high-spin Co3 ions competeswith a ferromagnetic (FM) interaction mediated by both p-d exchange and doubleexchange, being responsible for the observed AFM<missing VAR>-FM<missing VAR> transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 0, '<', 2]

Co3
###Spin state and phase competition in TbBaCo_{2}O_{5.5} and the lanthanide series LnBaCo_{2}O_{5+δ} (0<=δ<=1)|Hua Wu###
(508742, 508743)
 An antiferromagnetic (AFM)superexchange coupling between the almost high-spin Co3 ions competeswith a ferromagnetic (FM) interaction mediated by both p-d exchange and doubleexchange, being responsible for the observed AFM<missing VAR>-FM<missing VAR> transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 0, '<', 2]

F
###Spin state and phase competition in TbBaCo_{2}O_{5.5} and the lanthanide series LnBaCo_{2}O_{5+δ} (0<=δ<=1)|Hua Wu###
(508757, 508757)
 An antiferromagnetic (AFM)superexchange coupling between the almost high-spin Co3 ions competeswith a ferromagnetic (FM) interaction mediated by both p-d exchange and doubleexchange, being responsible for the observed AFM<missing VAR>-FM<missing VAR> transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 0, '<', 2]

F
###Spin state and phase competition in TbBaCo_{2}O_{5.5} and the lanthanide series LnBaCo_{2}O_{5+δ} (0<=δ<=1)|Hua Wu###
(508794, 508794)
 An antiferromagnetic (AFM)superexchange coupling between the almost high-spin Co3 ions competeswith a ferromagnetic (FM) interaction mediated by both p-d exchange and doubleexchange, being responsible for the observed AFM<missing VAR>-FM<missing VAR> transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 0, '<', 2]

F
###Spin state and phase competition in TbBaCo_{2}O_{5.5} and the lanthanide series LnBaCo_{2}O_{5+δ} (0<=δ<=1)|Hua Wu###
(508797, 508797)
 An antiferromagnetic (AFM)superexchange coupling between the almost high-spin Co3 ions competeswith a ferromagnetic (FM) interaction mediated by both p-d exchange and doubleexchange, being responsible for the observed AFM<missing VAR>-FM<missing VAR> transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 0, '<', 2]

Ba1-x
###Spin state and phase competition in TbBaCo_{2}O_{5.5} and the lanthanide series LnBaCo_{2}O_{5+δ} (0<=δ<=1)|Hua Wu###
(508891, 508894)
 Moreover, this picture can be generalized to the whole lanthanideseries, and it is predicted that a few room-temperature magnetoresistancematerials could be found in LnBa1-xAx<missing VAR>Co2O5delta(LnHo,Er,Tm,Yb,Lu; ASr,Ca,Mg).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[220.0, 0, '<', 4]

Co2O5
###Spin state and phase competition in TbBaCo_{2}O_{5.5} and the lanthanide series LnBaCo_{2}O_{5+δ} (0<=δ<=1)|Hua Wu###
(508897, 508900)
 Moreover, this picture can be generalized to the whole lanthanideseries, and it is predicted that a few room-temperature magnetoresistancematerials could be found in LnBa1-xAx<missing VAR>Co2O5delta(LnHo,Er,Tm,Yb,Lu; ASr,Ca,Mg).
Featurization terminated normally.
0,0,0,0,0,0,0,0.7142857142857143,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[226.0, 0, '<', 4]

Ho
###Spin state and phase competition in TbBaCo_{2}O_{5.5} and the lanthanide series LnBaCo_{2}O_{5+δ} (0<=δ<=1)|Hua Wu###
(508906, 508906)
 Moreover, this picture can be generalized to the whole lanthanideseries, and it is predicted that a few room-temperature magnetoresistancematerials could be found in LnBa1-xAx<missing VAR>Co2O5delta(LnHo,Er,Tm,Yb,Lu; ASr,Ca,Mg).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[235.0, 0, '<', 4]

Er
###Spin state and phase competition in TbBaCo_{2}O_{5.5} and the lanthanide series LnBaCo_{2}O_{5+δ} (0<=δ<=1)|Hua Wu###
(508908, 508908)
 Moreover, this picture can be generalized to the whole lanthanideseries, and it is predicted that a few room-temperature magnetoresistancematerials could be found in LnBa1-xAx<missing VAR>Co2O5delta(LnHo,Er,Tm,Yb,Lu; ASr,Ca,Mg).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[237.0, 0, '<', 4]

Tm
###Spin state and phase competition in TbBaCo_{2}O_{5.5} and the lanthanide series LnBaCo_{2}O_{5+δ} (0<=δ<=1)|Hua Wu###
(508910, 508910)
 Moreover, this picture can be generalized to the whole lanthanideseries, and it is predicted that a few room-temperature magnetoresistancematerials could be found in LnBa1-xAx<missing VAR>Co2O5delta(LnHo,Er,Tm,Yb,Lu; ASr,Ca,Mg).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[239.0, 0, '<', 4]

Yb
###Spin state and phase competition in TbBaCo_{2}O_{5.5} and the lanthanide series LnBaCo_{2}O_{5+δ} (0<=δ<=1)|Hua Wu###
(508912, 508912)
 Moreover, this picture can be generalized to the whole lanthanideseries, and it is predicted that a few room-temperature magnetoresistancematerials could be found in LnBa1-xAx<missing VAR>Co2O5delta(LnHo,Er,Tm,Yb,Lu; ASr,Ca,Mg).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[241.0, 0, '<', 4]

Lu
###Spin state and phase competition in TbBaCo_{2}O_{5.5} and the lanthanide series LnBaCo_{2}O_{5+δ} (0<=δ<=1)|Hua Wu###
(508914, 508914)
 Moreover, this picture can be generalized to the whole lanthanideseries, and it is predicted that a few room-temperature magnetoresistancematerials could be found in LnBa1-xAx<missing VAR>Co2O5delta(LnHo,Er,Tm,Yb,Lu; ASr,Ca,Mg).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[243.0, 0, '<', 4]

Sr
###Spin state and phase competition in TbBaCo_{2}O_{5.5} and the lanthanide series LnBaCo_{2}O_{5+δ} (0<=δ<=1)|Hua Wu###
(508918, 508918)
 Moreover, this picture can be generalized to the whole lanthanideseries, and it is predicted that a few room-temperature magnetoresistancematerials could be found in LnBa1-xAx<missing VAR>Co2O5delta(LnHo,Er,Tm,Yb,Lu; ASr,Ca,Mg).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[247.0, 0, '<', 4]

Ca
###Spin state and phase competition in TbBaCo_{2}O_{5.5} and the lanthanide series LnBaCo_{2}O_{5+δ} (0<=δ<=1)|Hua Wu###
(508920, 508920)
 Moreover, this picture can be generalized to the whole lanthanideseries, and it is predicted that a few room-temperature magnetoresistancematerials could be found in LnBa1-xAx<missing VAR>Co2O5delta(LnHo,Er,Tm,Yb,Lu; ASr,Ca,Mg).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[249.0, 0, '<', 4]

Mg
###Spin state and phase competition in TbBaCo_{2}O_{5.5} and the lanthanide series LnBaCo_{2}O_{5+δ} (0<=δ<=1)|Hua Wu###
(508922, 508922)
 Moreover, this picture can be generalized to the whole lanthanideseries, and it is predicted that a few room-temperature magnetoresistancematerials could be found in LnBa1-xAx<missing VAR>Co2O5delta(LnHo,Er,Tm,Yb,Lu; ASr,Ca,Mg).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[251.0, 0, '<', 4]

C
###Magnetization Distribution in the layered CMR Manganite La1.2Sr1.8Mn2O7 from Polarized Neutron Diffraction|D. N. Argyriou,P. J. Brown,J. S. Gardner,R. H. Heffner###
(508944, 508944)
Magnetization Distribution in the layered CMR Manganite La1.2Sr1.8Mn2O7 from Polarized Neutron Diffraction.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 4, '%', 2],[168.0, 100, 'K', 2],[171.0, 220, 'K', 2]

La1.2Sr1.8Mn2O7
###Magnetization Distribution in the layered CMR Manganite La1.2Sr1.8Mn2O7 from Polarized Neutron Diffraction|D. N. Argyriou,P. J. Brown,J. S. Gardner,R. H. Heffner###
(508950, 508957)
Magnetization Distribution in the layered CMR Manganite La1.2Sr1.8Mn2O7 from Polarized Neutron Diffraction.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.09999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 4, '%', 2],[155.0, 100, 'K', 2],[158.0, 220, 'K', 2]

In
###Magnetization Distribution in the layered CMR Manganite La1.2Sr1.8Mn2O7 from Polarized Neutron Diffraction|D. N. Argyriou,P. J. Brown,J. S. Gardner,R. H. Heffner###
(508968, 508968)
 In the ferromagnetic metallic state of the colossal magnetoresistive (CMR)manganite La1.2Sr1.8Mn2O7, the spin density distribution is essentially inagreement with the standard picture in which the unpaired electrons occupy thethree t2g orbitals, dxy, dyz, and dxz.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 4, '%', 1],[144.0, 100, 'K', 1],[147.0, 220, 'K', 1]

C
###Magnetization Distribution in the layered CMR Manganite La1.2Sr1.8Mn2O7 from Polarized Neutron Diffraction|D. N. Argyriou,P. J. Brown,J. S. Gardner,R. H. Heffner###
(508987, 508987)
 In the ferromagnetic metallic state of the colossal magnetoresistive (CMR)manganite La1.2Sr1.8Mn2O7, the spin density distribution is essentially inagreement with the standard picture in which the unpaired electrons occupy thethree t2g orbitals, dxy, dyz, and dxz.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 4, '%', 1],[125.0, 100, 'K', 1],[128.0, 220, 'K', 1]

La1.2Sr1.8Mn2O7
###Magnetization Distribution in the layered CMR Manganite La1.2Sr1.8Mn2O7 from Polarized Neutron Diffraction|D. N. Argyriou,P. J. Brown,J. S. Gardner,R. H. Heffner###
(508995, 509002)
 In the ferromagnetic metallic state of the colossal magnetoresistive (CMR)manganite La1.2Sr1.8Mn2O7, the spin density distribution is essentially inagreement with the standard picture in which the unpaired electrons occupy thethree t2g orbitals, dxy, dyz, and dxz.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.09999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 4, '%', 1],[110.0, 100, 'K', 1],[113.0, 220, 'K', 1]

Mn
###Magnetization Distribution in the layered CMR Manganite La1.2Sr1.8Mn2O7 from Polarized Neutron Diffraction|D. N. Argyriou,P. J. Brown,J. S. Gardner,R. H. Heffner###
(509089, 509089)
 However we find a small spin density 4%of the total Mn spin) on the apical O(2) oxygen atom at both 100 K and 220 Kand we suggest that this is due to covalency effects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 4, '%', 0],[23.0, 100, 'K', 0],[26.0, 220, 'K', 0]

Mn
###Magnetization Distribution in the layered CMR Manganite La1.2Sr1.8Mn2O7 from Polarized Neutron Diffraction|D. N. Argyriou,P. J. Brown,J. S. Gardner,R. H. Heffner###
(509175, 509175)
 Surprisingly we find noevidence of spin on the other apical oxygen O(1) suggesting that the Mn egelectron distribution along the c<missing VAR>-axis is highly anisotropic.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 4, '%', 1],[63.0, 100, 'K', 1],[60.0, 220, 'K', 1]

La1.2Sr1.8Mn2O7
###The Structure of Nanoscale Polaron Correlations in La1.2Sr1.8Mn2O7|B. J. Campbell,R. Osborn,D. N. Argyriou,L. Vasiliu-Doloc,J. F. Mitchell,S. K. Sinha,U. Ruett,C. D. Ling,Z. Islam,J. W. Lynn###
(509221, 509228)
The Structure of Nanoscale Polaron Correlations in La1.2Sr1.8Mn2O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.09999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 0.3, ',', 3],[142.0, 0, ',', 3],[209.0, 100, '>', 3]

In
###The Structure of Nanoscale Polaron Correlations in La1.2Sr1.8Mn2O7|B. J. Campbell,R. Osborn,D. N. Argyriou,L. Vasiliu-Doloc,J. F. Mitchell,S. K. Sinha,U. Ruett,C. D. Ling,Z. Islam,J. W. Lynn###
(509271, 509271)
 In this study,the structure of short-range polaron correlations in the layered colossalmagnetoresistive perovskite manganite, La1.2Sr1.8Mn2O7, has been determined bya crystallographic analysis of broad satellite maxima observed in diffuse X<missing VAR>-rayand neutron scattering data.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 0.3, ',', 1],[99.0, 0, ',', 1],[166.0, 100, '>', 1]

La1.2Sr1.8Mn2O7
###The Structure of Nanoscale Polaron Correlations in La1.2Sr1.8Mn2O7|B. J. Campbell,R. Osborn,D. N. Argyriou,L. Vasiliu-Doloc,J. F. Mitchell,S. K. Sinha,U. Ruett,C. D. Ling,Z. Islam,J. W. Lynn###
(509309, 509316)
 In this study,the structure of short-range polaron correlations in the layered colossalmagnetoresistive perovskite manganite, La1.2Sr1.8Mn2O7, has been determined bya crystallographic analysis of broad satellite maxima observed in diffuse X<missing VAR>-rayand neutron scattering data.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.09999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 0.3, ',', 1],[54.0, 0, ',', 1],[121.0, 100, '>', 1]

Zn
###Zn-doping effect on the magnetotransport properties of Bi_{2}Sr_{2-x}La_{x}CuO_{6+δ} single crystals|Y. Hanaki,Yoichi Ando,S. Ono,J. Takeya###
(509451, 509451)
Zn-doping effect on the magnetotransport properties of Bi2Sr2-xLax<missing VAR>CuO6 single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 2.2, '%', 1]

Bi2Sr2-xLa
###Zn-doping effect on the magnetotransport properties of Bi_{2}Sr_{2-x}La_{x}CuO_{6+δ} single crystals|Y. Hanaki,Yoichi Ando,S. Ono,J. Takeya###
(509467, 509473)
Zn-doping effect on the magnetotransport properties of Bi2Sr2-xLax<missing VAR>CuO6 single crystals.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[69.0, 2.2, '%', 1]

CuO6
###Zn-doping effect on the magnetotransport properties of Bi_{2}Sr_{2-x}La_{x}CuO_{6+δ} single crystals|Y. Hanaki,Yoichi Ando,S. Ono,J. Takeya###
(509475, 509477)
Zn-doping effect on the magnetotransport properties of Bi2Sr2-xLax<missing VAR>CuO6 single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 2.2, '%', 1]

Bi2Sr2-xLa
###Zn-doping effect on the magnetotransport properties of Bi_{2}Sr_{2-x}La_{x}CuO_{6+δ} single crystals|Y. Hanaki,Yoichi Ando,S. Ono,J. Takeya###
(509497, 509503)
 We report the magnetotransport properties ofBi2Sr2-xLax<missing VAR>Cu1-zZnz<missing VAR>O6delta (Zn-doped BSL<missing VAR>CO) single crystalswith z<missing VAR> of up to 2.2%.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[39.0, 2.2, '%', 0]

Cu1-zZn
###Zn-doping effect on the magnetotransport properties of Bi_{2}Sr_{2-x}La_{x}CuO_{6+δ} single crystals|Y. Hanaki,Yoichi Ando,S. Ono,J. Takeya###
(509505, 509509)
 We report the magnetotransport properties ofBi2Sr2-xLax<missing VAR>Cu1-zZnz<missing VAR>O6delta (Zn-doped BSL<missing VAR>CO) single crystalswith z<missing VAR> of up to 2.2%.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[33.0, 2.2, '%', 0]

O6
###Zn-doping effect on the magnetotransport properties of Bi_{2}Sr_{2-x}La_{x}CuO_{6+δ} single crystals|Y. Hanaki,Yoichi Ando,S. Ono,J. Takeya###
(509511, 509512)
 We report the magnetotransport properties ofBi2Sr2-xLax<missing VAR>Cu1-zZnz<missing VAR>O6delta (Zn-doped BSL<missing VAR>CO) single crystalswith z<missing VAR> of up to 2.2%.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 2.2, '%', 0]

Zn
###Zn-doping effect on the magnetotransport properties of Bi_{2}Sr_{2-x}La_{x}CuO_{6+δ} single crystals|Y. Hanaki,Yoichi Ando,S. Ono,J. Takeya###
(509516, 509516)
 We report the magnetotransport properties ofBi2Sr2-xLax<missing VAR>Cu1-zZnz<missing VAR>O6delta (Zn-doped BSL<missing VAR>CO) single crystalswith z<missing VAR> of up to 2.2%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 2.2, '%', 0]

BS
###Zn-doping effect on the magnetotransport properties of Bi_{2}Sr_{2-x}La_{x}CuO_{6+δ} single crystals|Y. Hanaki,Yoichi Ando,S. Ono,J. Takeya###
(509520, 509521)
 We report the magnetotransport properties ofBi2Sr2-xLax<missing VAR>Cu1-zZnz<missing VAR>O6delta (Zn-doped BSL<missing VAR>CO) single crystalswith z<missing VAR> of up to 2.2%.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 2.2, '%', 0]

O
###Zn-doping effect on the magnetotransport properties of Bi_{2}Sr_{2-x}La_{x}CuO_{6+δ} single crystals|Y. Hanaki,Yoichi Ando,S. Ono,J. Takeya###
(509524, 509524)
 We report the magnetotransport properties ofBi2Sr2-xLax<missing VAR>Cu1-zZnz<missing VAR>O6delta (Zn-doped BSL<missing VAR>CO) single crystalswith z<missing VAR> of up to 2.2%.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 2.2, '%', 0]

Zn
###Zn-doping effect on the magnetotransport properties of Bi_{2}Sr_{2-x}La_{x}CuO_{6+δ} single crystals|Y. Hanaki,Yoichi Ando,S. Ono,J. Takeya###
(509552, 509552)
 Besides the typical Zn-doping effects on the in-planeresistivity and the Hall angle, we demonstrate that the nature of thelow-temperature normal state in the Zn-doped samples is significantly alteredfrom that in the pristine samples under high magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 2.2, '%', 1]

Zn
###Zn-doping effect on the magnetotransport properties of Bi_{2}Sr_{2-x}La_{x}CuO_{6+δ} single crystals|Y. Hanaki,Yoichi Ando,S. Ono,J. Takeya###
(509605, 509605)
 Besides the typical Zn-doping effects on the in-planeresistivity and the Hall angle, we demonstrate that the nature of thelow-temperature normal state in the Zn-doped samples is significantly alteredfrom that in the pristine samples under high magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 2.2, '%', 1]

In
###Zn-doping effect on the magnetotransport properties of Bi_{2}Sr_{2-x}La_{x}CuO_{6+δ} single crystals|Y. Hanaki,Yoichi Ando,S. Ono,J. Takeya###
(509639, 509639)
 In particular, weobserve nearly-isotropic negative magnetoresistance as well as an increase inthe Hall coefficient at very low temperatures in non-superconducting Zn-dopedsamples, which we propose to be caused by the Kondo scattering from the localmoments induced by Zn impurities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 2.2, '%', 2]

Zn
###Zn-doping effect on the magnetotransport properties of Bi_{2}Sr_{2-x}La_{x}CuO_{6+δ} single crystals|Y. Hanaki,Yoichi Ando,S. Ono,J. Takeya###
(509690, 509690)
 In particular, weobserve nearly-isotropic negative magnetoresistance as well as an increase inthe Hall coefficient at very low temperatures in non-superconducting Zn-dopedsamples, which we propose to be caused by the Kondo scattering from the localmoments induced by Zn impurities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 2.2, '%', 2]

Zn
###Zn-doping effect on the magnetotransport properties of Bi_{2}Sr_{2-x}La_{x}CuO_{6+δ} single crystals|Y. Hanaki,Yoichi Ando,S. Ono,J. Takeya###
(509731, 509731)
 In particular, weobserve nearly-isotropic negative magnetoresistance as well as an increase inthe Hall coefficient at very low temperatures in non-superconducting Zn-dopedsamples, which we propose to be caused by the Kondo scattering from the localmoments induced by Zn impurities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[189.0, 2.2, '%', 2]

In
###Critical Exponents for the Ferromagnetism in Colossal Magnetoresistance Manganites|Nobuo Furukawa,Yukitoshi Motome###
(510067, 510067)
 Inorder to clarify intrinsic physics of the manganites through a comparison withtheoretical prediction, we investigate the critical phenomena ofdouble-exchange models by using finite-size scaling analysis on unbiasednumerical results.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Critical Exponents for the Ferromagnetism in Colossal Magnetoresistance Manganites|Nobuo Furukawa,Yukitoshi Motome###
(510141, 510141)
 As a result, we show that the critical exponents of theferromagnetic transition of the three-dimensional double-exchange model isconsistent with those of the Heisenberg model, but are distinct from themean-field one.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YbAl3
###Two energy scales and slow crossover in YbAl3|J. M. Lawrence,T. Ebihara,P. S. Riseborough,C. H. Booth,M. F. Hundley,P. G. Pagliuso,J. L. Sarrao,J. D. Thompson,M. H. Jung,A. H. Lacerda,G. H. Kwei###
(510510, 510512)
Two energy scales and slow crossover in YbAl3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 4, 'f', 1],[75.0, 670, 'K', 1]

YbAl3
###Two energy scales and slow crossover in YbAl3|J. M. Lawrence,T. Ebihara,P. S. Riseborough,C. H. Booth,M. F. Hundley,P. G. Pagliuso,J. L. Sarrao,J. D. Thompson,M. H. Jung,A. H. Lacerda,G. H. Kwei###
(510554, 510556)
 Experimental results for the susceptibility, specific heat, 4f occupationnumber, Hall effect and magnetoresistance for single crystals of YbAl3show that, in addition to the Kondo energy scale kBTK % sim  670K,there is a low temperature scale T<missing VAR>coh<50K for the onset of coherence.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 4, 'f', 0],[31.0, 670, 'K', 0]

K
###Two energy scales and slow crossover in YbAl3|J. M. Lawrence,T. Ebihara,P. S. Riseborough,C. H. Booth,M. F. Hundley,P. G. Pagliuso,J. L. Sarrao,J. D. Thompson,M. H. Jung,A. H. Lacerda,G. H. Kwei###
(510581, 510581)
 Experimental results for the susceptibility, specific heat, 4f occupationnumber, Hall effect and magnetoresistance for single crystals of YbAl3show that, in addition to the Kondo energy scale kBTK % sim  670K,there is a low temperature scale T<missing VAR>coh<50K for the onset of coherence.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 4, 'f', 0],[6.0, 670, 'K', 0]

K
###Two energy scales and slow crossover in YbAl3|J. M. Lawrence,T. Ebihara,P. S. Riseborough,C. H. Booth,M. F. Hundley,P. G. Pagliuso,J. L. Sarrao,J. D. Thompson,M. H. Jung,A. H. Lacerda,G. H. Kwei###
(510607, 510607)
 Experimental results for the susceptibility, specific heat, 4f occupationnumber, Hall effect and magnetoresistance for single crystals of YbAl3show that, in addition to the Kondo energy scale kBTK % sim  670K,there is a low temperature scale T<missing VAR>coh<50K for the onset of coherence.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 4, 'f', 0],[20.0, 670, 'K', 0]

YBa2Cu3O
###Magnetoresistance of Untwinned YBa_{2}Cu_{3}O_{y} Single Crystals in a Wide Range of Doping: Anomalous Hole-Doping Dependence of the Coherence Length|Yoichi Ando,Kouji Segawa###
(510728, 510733)
Magnetoresistance of Untwinned YBa2Cu3Oy<missing VAR> Single Crystals in a Wide Range of Doping Anomalous Hole-Doping Dependence of the Coherence Length.
Featurization terminated normally.
0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[202.0, 12, '%', 2],[210.0, 6.65, ',', 2]

YBa2Cu3O
###Magnetoresistance of Untwinned YBa_{2}Cu_{3}O_{y} Single Crystals in a Wide Range of Doping: Anomalous Hole-Doping Dependence of the Coherence Length|Yoichi Ando,Kouji Segawa###
(510791, 510796)
 Magnetoresistance (MR) in the a-axis resistivity of untwinnedYBa2Cu3Oy<missing VAR> single crystals is measured for a wide range of doping (y<missing VAR> 6.45 - 7.0).
Featurization terminated normally.
0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 12, '%', 1],[147.0, 6.65, ',', 1]

K
###Magnetoresistance of Untwinned YBa_{2}Cu_{3}O_{y} Single Crystals in a Wide Range of Doping: Anomalous Hole-Doping Dependence of the Coherence Length|Yoichi Ando,Kouji Segawa###
(510885, 510885)
 The y<missing VAR>-dependence of the in-plane coherence length xiabestimated from the fluctuation magnetoconductance indicates that thesuperconductivity is anomalously weakened in the 60-K phase; this givesevidence, together with the Hall coefficient and the a-axis thermopower datathat suggest the hole doping to be 12% for y<missing VAR>  6.65, that the origin of the60-K plateau is the 1/8 anomaly.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 12, '%', 0],[58.0, 6.65, ',', 0]

K
###Magnetoresistance of Untwinned YBa_{2}Cu_{3}O_{y} Single Crystals in a Wide Range of Doping: Anomalous Hole-Doping Dependence of the Coherence Length|Yoichi Ando,Kouji Segawa###
(510959, 510959)
 The y<missing VAR>-dependence of the in-plane coherence length xiabestimated from the fluctuation magnetoconductance indicates that thesuperconductivity is anomalously weakened in the 60-K phase; this givesevidence, together with the Hall coefficient and the a-axis thermopower datathat suggest the hole doping to be 12% for y<missing VAR>  6.65, that the origin of the60-K plateau is the 1/8 anomaly.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 12, '%', 0],[16.0, 6.65, ',', 0]

At
###Magnetoresistance of Untwinned YBa_{2}Cu_{3}O_{y} Single Crystals in a Wide Range of Doping: Anomalous Hole-Doping Dependence of the Coherence Length|Yoichi Ando,Kouji Segawa###
(510974, 510974)
 At high temperatures, the normal-state MR datashow signatures of the Zeeman effect on the pseudogap in underdoped samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 12, '%', 1],[31.0, 6.65, ',', 1]

MgB2
###Studies on the Anisotropic Properties of MgB2|O. F. de Lima###
(511038, 511040)
Studies on the Anisotropic Properties of MgB2.
Featurization terminated normally.
0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 2, ',', 2],[213.0, 1.3, 'and', 5]

MgB2
###Studies on the Anisotropic Properties of MgB2|O. F. de Lima###
(511068, 511070)
 This paper presents a brief review on the reported anisotropic properties ofMgB2, in the superconducting state (e.g.
Featurization terminated normally.
0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 2, ',', 1],[183.0, 1.3, 'and', 4]

In
###Prediction of Orbital Ordering in Single-Layered Ruthenates|Takashi Hotta,Elbio Dagotto###
(511326, 511326)
 In the G<missing VAR>-typeantiferromagnetic phase of Ca2RuO4, recent X<missing VAR>-ray experiments reported thepresence of 0.5 hole per site in the d<missing VAR>xy orbital, while the d<missing VAR>rm yzand d<missing VAR>zx orbitals contain 1.5 holes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 0.5, 'hole', 0],[72.0, 1.5, 'holes', 0]

Ca2RuO4
###Prediction of Orbital Ordering in Single-Layered Ruthenates|Takashi Hotta,Elbio Dagotto###
(511341, 511345)
 In the G<missing VAR>-typeantiferromagnetic phase of Ca2RuO4, recent X<missing VAR>-ray experiments reported thepresence of 0.5 hole per site in the d<missing VAR>xy orbital, while the d<missing VAR>rm yzand d<missing VAR>zx orbitals contain 1.5 holes.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 0.5, 'hole', 0],[53.0, 1.5, 'holes', 0]

(OO)
###Prediction of Orbital Ordering in Single-Layered Ruthenates|Takashi Hotta,Elbio Dagotto###
(511432, 511435)
 This unexpected t2g holedistribution is explained by a novel state with orbital ordering (OO),stabilized by a combination of Coulomb interactions and lattice distortions.
Featurization successful!
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 0.5, 'hole', 1],[34.0, 1.5, 'holes', 1]

In
###Prediction of Orbital Ordering in Single-Layered Ruthenates|Takashi Hotta,Elbio Dagotto###
(511460, 511460)
 Inaddition, the rich phase diagram presented here suggests the possibility oflarge magnetoresistance effects, and predicts a new ferromagnetic OO phase inruthenates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 0.5, 'hole', 2],[62.0, 1.5, 'holes', 2]

OO
###Prediction of Orbital Ordering in Single-Layered Ruthenates|Takashi Hotta,Elbio Dagotto###
(511504, 511505)
 Inaddition, the rich phase diagram presented here suggests the possibility oflarge magnetoresistance effects, and predicts a new ferromagnetic OO phase inruthenates.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 0.5, 'hole', 2],[106.0, 1.5, 'holes', 2]

GaAs/GaAlAs
###Hole-Hole Interaction Effect in the Conductance of the Two-Dimensional Hole Gas in the Ballistic Regime|Y. Y. Proskuryakov,A. K. Savchenko,S. S. Safonov,M. Pepper,M. Y. Simmons,D. A. Ritchie###
(511585, 511590)
 On a high mobility two-dimensional hole gas (2DHG) in a GaAs/GaAlAsheterostructure we study the interaction correction to the Drude conductivityin the ballistic regime, kBTtau /hbar  >1.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[85.0, 2, 'DHG', 1]

F0
###Hole-Hole Interaction Effect in the Conductance of the Two-Dimensional Hole Gas in the Ballistic Regime|Y. Y. Proskuryakov,A. K. Savchenko,S. S. Safonov,M. Pepper,M. Y. Simmons,D. A. Ritchie###
(511757, 511758)
 We find that thetemperature dependence of the conductivity and the parallel-fieldmagnetoresistance are in agreement with this description, and determine theFermi-liquid interaction constant F0sigma  which controls the sign ofd<missing VAR>rho /dT.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 2, 'DHG', 1]

Ga[Al]As
###Transport signatures of correlated disorder in a two-dimensional electron gas|T. Heinzel,R. D. Jaeggi,E. Ribeiro,M. v. Waldkirch,K. Ensslin,S. E. Ulloa,G. Medeiros-Ribeiro,P. M. Petroff###
(511837, 511841)
 We report electronic transport measurements on two-dimensional electron gasesin a Ga[Al]As heterostructure with an embedded layer of InAs self-assembledquantum dots.
EXCEPTION 1: Square brackets detected! Chemical formula was modified to: Ga(Al)As
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

InAs
###Transport signatures of correlated disorder in a two-dimensional electron gas|T. Heinzel,R. D. Jaeggi,E. Ribeiro,M. v. Waldkirch,K. Ensslin,S. E. Ulloa,G. Medeiros-Ribeiro,P. M. Petroff###
(511855, 511856)
 We report electronic transport measurements on two-dimensional electron gasesin a Ga[Al]As heterostructure with an embedded layer of InAs self-assembledquantum dots.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Transport signatures of correlated disorder in a two-dimensional electron gas|T. Heinzel,R. D. Jaeggi,E. Ribeiro,M. v. Waldkirch,K. Ensslin,S. E. Ulloa,G. Medeiros-Ribeiro,P. M. Petroff###
(511868, 511868)
 At high InAs dot densities, pronounced Altshuler-Aronov-Spivakmagnetoresistance oscillations are observed, which indicate short-rangeordering of the potential landscape formed by the charged dots and the strainfields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

InAs
###Transport signatures of correlated disorder in a two-dimensional electron gas|T. Heinzel,R. D. Jaeggi,E. Ribeiro,M. v. Waldkirch,K. Ensslin,S. E. Ulloa,G. Medeiros-Ribeiro,P. M. Petroff###
(511872, 511873)
 At high InAs dot densities, pronounced Altshuler-Aronov-Spivakmagnetoresistance oscillations are observed, which indicate short-rangeordering of the potential landscape formed by the charged dots and the strainfields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(COO)
###Magnetic-field-induced collapse of charge-ordered nanoclusters and the Colossal Magnetoresistance effect in Nd(0.3)Sr(0.3)MnO(3)|T. Y. Koo,V. Kiryukhin,P. A. Sharma,J. P. Hill,S-W. Cheong###
(512102, 512106)
 We report synchrotron x<missing VAR>-ray scattering studies of charge/orbitally ordered(COO) nanoclusters in Nd0.7Sr0.3MnO3.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nd0.7Sr0.3MnO3
###Magnetic-field-induced collapse of charge-ordered nanoclusters and the Colossal Magnetoresistance effect in Nd(0.3)Sr(0.3)MnO(3)|T. Y. Koo,V. Kiryukhin,P. A. Sharma,J. P. Hill,S-W. Cheong###
(512112, 512118)
 We report synchrotron x<missing VAR>-ray scattering studies of charge/orbitally ordered(COO) nanoclusters in Nd0.7Sr0.3MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

COO
###Magnetic-field-induced collapse of charge-ordered nanoclusters and the Colossal Magnetoresistance effect in Nd(0.3)Sr(0.3)MnO(3)|T. Y. Koo,V. Kiryukhin,P. A. Sharma,J. P. Hill,S-W. Cheong###
(512129, 512131)
 We find that the COOnanoclusters are strongly suppressed in an applied magnetic field, and thattheir decreasing concentration follows the field-induced decrease of the sampleelectrical resistivity.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

COO
###Magnetic-field-induced collapse of charge-ordered nanoclusters and the Colossal Magnetoresistance effect in Nd(0.3)Sr(0.3)MnO(3)|T. Y. Koo,V. Kiryukhin,P. A. Sharma,J. P. Hill,S-W. Cheong###
(512188, 512190)
 The COO nanoclusters, however, do not completelydisappear in the conducting state, suggesting that this state is inhomogeneousand contains an admixture of an insulating phase.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Long-Range Coherence in a Mesoscopic Metal near a Superconducting Interface|H. Courtois,Ph. Gandit,D. Mailly,B. Pannetier###
(512401, 512401)
 At lowtemperature, a flux-modulated Josephson coupling is observed with strongdamping over the thermal length LT.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Long-Range Coherence in a Mesoscopic Metal near a Superconducting Interface|H. Courtois,Ph. Gandit,D. Mailly,B. Pannetier###
(512442, 512442)
 At higher temperature, themagnetoresistance exhibits large h<missing VAR>/2e<missing VAR>-periodic oscillations with 1/T<missing VAR> power lawdecay.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Microscopic spin interactions in the CMR manganites|J. A. Fernandez-Baca,Pengcheng Dai,H. Kawano-Furukawa,H. Yoshizawa,E. W. Plummer,S. Katano,Y. Tomioka,Y. Tokura###
(512574, 512574)
Microscopic spin interactions in the CMR manganites.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Microscopic spin interactions in the CMR manganites|J. A. Fernandez-Baca,Pengcheng Dai,H. Kawano-Furukawa,H. Yoshizawa,E. W. Plummer,S. Katano,Y. Tomioka,Y. Tokura###
(512611, 512611)
 Using inelastic neutron scattering we measured the microscopic magneticcoupling associated with the ferromagnetic (FM) clusters of the colossalmagnetoresistance (CMR) compound Pr0.70Ca0.30MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Microscopic spin interactions in the CMR manganites|J. A. Fernandez-Baca,Pengcheng Dai,H. Kawano-Furukawa,H. Yoshizawa,E. W. Plummer,S. Katano,Y. Tomioka,Y. Tokura###
(512627, 512627)
 Using inelastic neutron scattering we measured the microscopic magneticcoupling associated with the ferromagnetic (FM) clusters of the colossalmagnetoresistance (CMR) compound Pr0.70Ca0.30MnO3.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pr0.70Ca0.30MnO3
###Microscopic spin interactions in the CMR manganites|J. A. Fernandez-Baca,Pengcheng Dai,H. Kawano-Furukawa,H. Yoshizawa,E. W. Plummer,S. Katano,Y. Tomioka,Y. Tokura###
(512634, 512640)
 Using inelastic neutron scattering we measured the microscopic magneticcoupling associated with the ferromagnetic (FM) clusters of the colossalmagnetoresistance (CMR) compound Pr0.70Ca0.30MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Microscopic spin interactions in the CMR manganites|J. A. Fernandez-Baca,Pengcheng Dai,H. Kawano-Furukawa,H. Yoshizawa,E. W. Plummer,S. Katano,Y. Tomioka,Y. Tokura###
(512655, 512655)
 When theinsulating to metal (I-M) transition is induced by an external magnetic fieldthere is a discontinuous change in the spin-wave stiffness constant.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Microscopic spin interactions in the CMR manganites|J. A. Fernandez-Baca,Pengcheng Dai,H. Kawano-Furukawa,H. Yoshizawa,E. W. Plummer,S. Katano,Y. Tomioka,Y. Tokura###
(512751, 512751)
 Thisresult indicates that the probed regions undergo a first-order transition froman insulating to a metallic state, and that there are no FM<missing VAR> metallic domains inthe insulating region.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Microscopic spin interactions in the CMR manganites|J. A. Fernandez-Baca,Pengcheng Dai,H. Kawano-Furukawa,H. Yoshizawa,E. W. Plummer,S. Katano,Y. Tomioka,Y. Tokura###
(512776, 512776)
 We argue that the I-M<missing VAR> transition in the CMR manganitesis more complex than the simple percolation of large FM<missing VAR> metallic clusters.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Microscopic spin interactions in the CMR manganites|J. A. Fernandez-Baca,Pengcheng Dai,H. Kawano-Furukawa,H. Yoshizawa,E. W. Plummer,S. Katano,Y. Tomioka,Y. Tokura###
(512786, 512786)
 We argue that the I-M<missing VAR> transition in the CMR manganitesis more complex than the simple percolation of large FM<missing VAR> metallic clusters.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Microscopic spin interactions in the CMR manganites|J. A. Fernandez-Baca,Pengcheng Dai,H. Kawano-Furukawa,H. Yoshizawa,E. W. Plummer,S. Katano,Y. Tomioka,Y. Tokura###
(512811, 512811)
 We argue that the I-M<missing VAR> transition in the CMR manganitesis more complex than the simple percolation of large FM<missing VAR> metallic clusters.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi
###Two mechanisms of pseudogap formation in Bi-2201: Evidence from the c-axis magnetoresistance|A. N. Lavrov,Yoichi Ando,S. Ono###
(512839, 512839)
Two mechanisms of pseudogap formation in Bi-2201 Evidence from the c<missing VAR>-axis magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Two mechanisms of pseudogap formation in Bi-2201: Evidence from the c-axis magnetoresistance|A. N. Lavrov,Yoichi Ando,S. Ono###
(512888, 512888)
 Measurements of the c<missing VAR>-axis resistivity and magnetoresistance have been usedto investigate the pseudogap (PG) behavior in Bi2z<missing VAR>Sr2-x-zLaxCuOy<missing VAR>(Bi-2201) crystals at various hole densities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2
###Two mechanisms of pseudogap formation in Bi-2201: Evidence from the c-axis magnetoresistance|A. N. Lavrov,Yoichi Ando,S. Ono###
(512896, 512897)
 Measurements of the c<missing VAR>-axis resistivity and magnetoresistance have been usedto investigate the pseudogap (PG) behavior in Bi2z<missing VAR>Sr2-x-zLaxCuOy<missing VAR>(Bi-2201) crystals at various hole densities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr2-x
###Two mechanisms of pseudogap formation in Bi-2201: Evidence from the c-axis magnetoresistance|A. N. Lavrov,Yoichi Ando,S. Ono###
(512899, 512902)
 Measurements of the c<missing VAR>-axis resistivity and magnetoresistance have been usedto investigate the pseudogap (PG) behavior in Bi2z<missing VAR>Sr2-x-zLaxCuOy<missing VAR>(Bi-2201) crystals at various hole densities.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

CuO
###Two mechanisms of pseudogap formation in Bi-2201: Evidence from the c-axis magnetoresistance|A. N. Lavrov,Yoichi Ando,S. Ono###
(512907, 512908)
 Measurements of the c<missing VAR>-axis resistivity and magnetoresistance have been usedto investigate the pseudogap (PG) behavior in Bi2z<missing VAR>Sr2-x-zLaxCuOy<missing VAR>(Bi-2201) crystals at various hole densities.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi
###Two mechanisms of pseudogap formation in Bi-2201: Evidence from the c-axis magnetoresistance|A. N. Lavrov,Yoichi Ando,S. Ono###
(512913, 512913)
 Measurements of the c<missing VAR>-axis resistivity and magnetoresistance have been usedto investigate the pseudogap (PG) behavior in Bi2z<missing VAR>Sr2-x-zLaxCuOy<missing VAR>(Bi-2201) crystals at various hole densities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Two mechanisms of pseudogap formation in Bi-2201: Evidence from the c-axis magnetoresistance|A. N. Lavrov,Yoichi Ando,S. Ono###
(512933, 512933)
 While the PG<missing VAR> opening temperatureT<missing VAR> increases with decreasing hole doping, the magnetic-field sensitivity of thePG<missing VAR> is found to have a very different trend it appears at lower temperatures inmore underdoped samples and vanishes in non-superconducting samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Two mechanisms of pseudogap formation in Bi-2201: Evidence from the c-axis magnetoresistance|A. N. Lavrov,Yoichi Ando,S. Ono###
(512967, 512967)
 While the PG<missing VAR> opening temperatureT<missing VAR> increases with decreasing hole doping, the magnetic-field sensitivity of thePG<missing VAR> is found to have a very different trend it appears at lower temperatures inmore underdoped samples and vanishes in non-superconducting samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Phase Transitions in the Bilayer $ν=2/3$ Quantum Hall Effect|N. Kumada,D. Terasawa,Y. Shimoda,H. Azuhata,A. Sawada,Z. F. Ezawa,K. Muraki,T. Saku,Y. Hirayama###
(513118, 513118)
 We measured the magnetoresistance of bilayer quantum Hall (Q<missing VAR>H) effects at thefractional filling factor nu 2/3 by changing the total electron density andthe density difference between two layers.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Phase Transitions in the Bilayer $ν=2/3$ Quantum Hall Effect|N. Kumada,D. Terasawa,Y. Shimoda,H. Azuhata,A. Sawada,Z. F. Ezawa,K. Muraki,T. Saku,Y. Hirayama###
(513173, 513173)
 Three different Q<missing VAR>H states wereseparated by two types of phase transition One is the spin transition and theother is the pseudospin transition.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Phase Transitions in the Bilayer $ν=2/3$ Quantum Hall Effect|N. Kumada,D. Terasawa,Y. Shimoda,H. Azuhata,A. Sawada,Z. F. Ezawa,K. Muraki,T. Saku,Y. Hirayama###
(513220, 513220)
 In addition, two different hystereses weredetected, one of which is specific to bilayer systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CeNiGe2
###Magnetocrystalline Anisotropy in a Single Crystal of CeNiGe2|M. H. Jung,N. Harrison,A. H. Lacerda,P. G. Pagliuso,J. L. Sarrao,J. D. Thompson###
(513317, 513320)
Magnetocrystalline Anisotropy in a Single Crystal of CeNiGe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 2, 'K', 2],[82.0, 18, 'at', 2],[83.0, 4, 'T', 2],[107.0, 70, 'at', 2],[144.0, 3, 'K', 3]

CeNiGe2
###Magnetocrystalline Anisotropy in a Single Crystal of CeNiGe2|M. H. Jung,N. Harrison,A. H. Lacerda,P. G. Pagliuso,J. L. Sarrao,J. D. Thompson###
(513339, 513342)
 We report measurements on single crystals of orthorhombic CeNiGe2, which isfound to exhibit highly anisotropic magnetic and transport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 2, 'K', 1],[60.0, 18, 'at', 1],[61.0, 4, 'T', 1],[85.0, 70, 'at', 1],[122.0, 3, 'K', 2]

H
###Magnetocrystalline Anisotropy in a Single Crystal of CeNiGe2|M. H. Jung,N. Harrison,A. H. Lacerda,P. G. Pagliuso,J. L. Sarrao,J. D. Thompson###
(513378, 513378)
 Themagnetization ratio M<missing VAR>(H//b)/M<missing VAR>(Hb) at 2 K is observed to be about 18 at 4 T andthe electrical resistivity ratio r<missing VAR>//b/rb is about 70 at room temperature.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 2, 'K', 0],[24.0, 18, 'at', 0],[25.0, 4, 'T', 0],[49.0, 70, 'at', 0],[86.0, 3, 'K', 1]

H
###Magnetocrystalline Anisotropy in a Single Crystal of CeNiGe2|M. H. Jung,N. Harrison,A. H. Lacerda,P. G. Pagliuso,J. L. Sarrao,J. D. Thompson###
(513386, 513386)
 Themagnetization ratio M<missing VAR>(H//b)/M<missing VAR>(Hb) at 2 K is observed to be about 18 at 4 T andthe electrical resistivity ratio r<missing VAR>//b/rb is about 70 at room temperature.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 2, 'K', 0],[16.0, 18, 'at', 0],[17.0, 4, 'T', 0],[41.0, 70, 'at', 0],[78.0, 3, 'K', 1]

CeNiGe2
###Magnetocrystalline Anisotropy in a Single Crystal of CeNiGe2|M. H. Jung,N. Harrison,A. H. Lacerda,P. G. Pagliuso,J. L. Sarrao,J. D. Thompson###
(513443, 513446)
 Itis confirmed that CeNiGe2 undergoes two-step antiferromagnetic transition at 4and 3 K, as reported for polycrystalline samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 2, 'K', 1],[41.0, 18, 'at', 1],[40.0, 4, 'T', 1],[16.0, 70, 'at', 1],[18.0, 3, 'K', 0]

Ce
###Magnetocrystalline Anisotropy in a Single Crystal of CeNiGe2|M. H. Jung,N. Harrison,A. H. Lacerda,P. G. Pagliuso,J. L. Sarrao,J. D. Thompson###
(513520, 513520)
 The application of magneticfield along the b<missing VAR> axis (the easy magnetization axis) stabilizes a ferromagneticcorrelation between the Ce ions and enhances the hopping of carriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 2, 'K', 2],[118.0, 18, 'at', 2],[117.0, 4, 'T', 2],[93.0, 70, 'at', 2],[56.0, 3, 'K', 1]

Co
###A Theoretical Search for the Optimum Giant Magnetoresistance|Tat-Sang Choy,Jian Chen,Selman Hershfield###
(513617, 513617)
 The maximum current-perpendicular-to-plane giant magnetoresistance issearched for in magnetic multilayers made of Co, Ni, and Cu with disorderlevels similar to those found in room temperature experiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 450, '%', 2]

Ni
###A Theoretical Search for the Optimum Giant Magnetoresistance|Tat-Sang Choy,Jian Chen,Selman Hershfield###
(513620, 513620)
 The maximum current-perpendicular-to-plane giant magnetoresistance issearched for in magnetic multilayers made of Co, Ni, and Cu with disorderlevels similar to those found in room temperature experiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 450, '%', 2]

Cu
###A Theoretical Search for the Optimum Giant Magnetoresistance|Tat-Sang Choy,Jian Chen,Selman Hershfield###
(513625, 513625)
 The maximum current-perpendicular-to-plane giant magnetoresistance issearched for in magnetic multilayers made of Co, Ni, and Cu with disorderlevels similar to those found in room temperature experiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 450, '%', 2]

Ni/Cu
###A Theoretical Search for the Optimum Giant Magnetoresistance|Tat-Sang Choy,Jian Chen,Selman Hershfield###
(513765, 513767)
 Using simulated annealing, hundreds of different configurationsof the atomic layers are examined to find a maximum GMR of 450% in ultrathinNi/Cu superlattices.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[8.0, 450, '%', 0]

LaSb2
###Field Suppression of the Density-of-States: A Mechanism for Large Linear Magnetoresistance|D. P. Young,J. F. DiTusa,R. G. Goodrich,D. Hall,J. Anderson,S. Guo,Julia Y. Chan,P. W. Adams###
(514114, 514116)
 Hall, resistivity, magnetization, and thermoelectric power measurements wereperformed on single crystals of the highly anisotropic layered metal LaSb2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 45, 'T', 1],[138.0, 9, 'T', 4]

(H)
###Field Suppression of the Density-of-States: A Mechanism for Large Linear Magnetoresistance|D. P. Young,J. F. DiTusa,R. G. Goodrich,D. Hall,J. Anderson,S. Guo,Julia Y. Chan,P. W. Adams###
(514195, 514197)
 We show that the MR is associated with amagnetic-field-dependent holelike carrier density, n<missing VAR>(H) propto 1/H.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 45, 'T', 1],[57.0, 9, 'T', 2]

H
###Field Suppression of the Density-of-States: A Mechanism for Large Linear Magnetoresistance|D. P. Young,J. F. DiTusa,R. G. Goodrich,D. Hall,J. Anderson,S. Guo,Julia Y. Chan,P. W. Adams###
(514203, 514203)
 We show that the MR is associated with amagnetic-field-dependent holelike carrier density, n<missing VAR>(H) propto 1/H.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 45, 'T', 1],[51.0, 9, 'T', 2]

At
###Field Suppression of the Density-of-States: A Mechanism for Large Linear Magnetoresistance|D. P. Young,J. F. DiTusa,R. G. Goodrich,D. Hall,J. Anderson,S. Guo,Julia Y. Chan,P. W. Adams###
(514242, 514242)
 At low temperature, a field of 9 T reduces the carrier density by morethan an order of magnitude.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 45, 'T', 3],[12.0, 9, 'T', 0]

In
###Spin polarization of strongly interacting 2D electrons: the role of disorder|S. A. Vitkalov,M. P. Sarachik,T. M. Klapwijk###
(514310, 514310)
 In high-mobility silicon M<missing VAR>OSFETs, the gm inferred indirectly frommagnetoconductance and magnetoresistance measurements with the assumption thatg<missing VAR>muBHs2EF are in surprisingly good agreement with gm obtained bydirect measurement of Shubnikov-de Haas oscillations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 2, 'D', 1]

OSF
###Spin polarization of strongly interacting 2D electrons: the role of disorder|S. A. Vitkalov,M. P. Sarachik,T. M. Klapwijk###
(514319, 514321)
 In high-mobility silicon M<missing VAR>OSFETs, the gm inferred indirectly frommagnetoconductance and magnetoresistance measurements with the assumption thatg<missing VAR>muBHs2EF are in surprisingly good agreement with gm obtained bydirect measurement of Shubnikov-de Haas oscillations.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 2, 'D', 1]

BH
###Spin polarization of strongly interacting 2D electrons: the role of disorder|S. A. Vitkalov,M. P. Sarachik,T. M. Klapwijk###
(514358, 514359)
 In high-mobility silicon M<missing VAR>OSFETs, the gm inferred indirectly frommagnetoconductance and magnetoresistance measurements with the assumption thatg<missing VAR>muBHs2EF are in surprisingly good agreement with gm obtained bydirect measurement of Shubnikov-de Haas oscillations.
Featurization terminated normally.
0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 2, 'D', 1]

F
###Spin polarization of strongly interacting 2D electrons: the role of disorder|S. A. Vitkalov,M. P. Sarachik,T. M. Klapwijk###
(514363, 514363)
 In high-mobility silicon M<missing VAR>OSFETs, the gm inferred indirectly frommagnetoconductance and magnetoresistance measurements with the assumption thatg<missing VAR>muBHs2EF are in surprisingly good agreement with gm obtained bydirect measurement of Shubnikov-de Haas oscillations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 2, 'D', 1]

H
###Spin polarization of strongly interacting 2D electrons: the role of disorder|S. A. Vitkalov,M. P. Sarachik,T. M. Klapwijk###
(514462, 514462)
 We examine the significance of the fieldscale Hs<missing VAR> derived from transport measurements, and show that this fieldsignals the onset of full spin polarization only in the absence of disorder.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 2, 'D', 3]

Ce3Pd4Ge4
###Electrical and magnetic properties of the new Kondo-lattice compound Ce3Pd4Ge4|H. J. Im,Y. S. Kwon,M. H. Jung###
(514577, 514582)
Electrical and magnetic properties of the new Kondo-lattice compound Ce3Pd4Ge4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.36363636363636365,0,0,0,0,0,0,0,0,0,0,0,0,0,0.36363636363636365,0,0,0,0,0,0,0,0,0,0,0,0.2727272727272727,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 6, 'K', 2],[157.0, 4, 'f', 4]

Ce3Pd4Ge4
###Electrical and magnetic properties of the new Kondo-lattice compound Ce3Pd4Ge4|H. J. Im,Y. S. Kwon,M. H. Jung###
(514622, 514627)
 We have measured the electric resistivity, magnetoresistance, magneticsusceptibility and magnetization of the new Kondo-lattice compound Ce3Pd4Ge4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.36363636363636365,0,0,0,0,0,0,0,0,0,0,0,0,0,0.36363636363636365,0,0,0,0,0,0,0,0,0,0,0,0.2727272727272727,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 6, 'K', 1],[112.0, 4, 'f', 3]

Ce3Pd20Ge6
###Electrical and magnetic properties of the new Kondo-lattice compound Ce3Pd4Ge4|H. J. Im,Y. S. Kwon,M. H. Jung###
(514696, 514701)
 This phenomenon is similar to that of Ce3Pd20Ge6 which showsquadrupolar interation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.20689655172413793,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6896551724137931,0,0,0,0,0,0,0,0,0,0,0,0.10344827586206896,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 6, 'K', 1],[38.0, 4, 'f', 1]

Ce3Pd4Ge4
###Electrical and magnetic properties of the new Kondo-lattice compound Ce3Pd4Ge4|H. J. Im,Y. S. Kwon,M. H. Jung###
(514745, 514750)
 We suggest that there is the possibility of quadrupolarinteraction in the orthorhombic 4f-electron system Ce3Pd4Ge4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.36363636363636365,0,0,0,0,0,0,0,0,0,0,0,0,0,0.36363636363636365,0,0,0,0,0,0,0,0,0,0,0,0.2727272727272727,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 6, 'K', 2],[6.0, 4, 'f', 0]

In
###Electrical and magnetic properties of the new Kondo-lattice compound Ce3Pd4Ge4|H. J. Im,Y. S. Kwon,M. H. Jung###
(514753, 514753)
 In addition, itis realized that the spin-dependent scattering effect is responsible for themagnetotransport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 6, 'K', 3],[14.0, 4, 'f', 1]

B
###Slow oscillations of magnetoresistance in quasi-two-dimensional metals|M. V. Kartsovnik,P. D. Grigoriev,W. Biberacher,N. D. Kushch,P. Wyder###
(515118, 515118)
 Slow oscillations of the interlayer magnetoresistance observed in the layeredorganic metal beta -(BEDT-TTF)2IBr2 are shown to originate from theslight warping of its Fermi surface rather than from independent smallcyclotron orbits.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Slow oscillations of magnetoresistance in quasi-two-dimensional metals|M. V. Kartsovnik,P. D. Grigoriev,W. Biberacher,N. D. Kushch,P. Wyder###
(515125, 515125)
 Slow oscillations of the interlayer magnetoresistance observed in the layeredorganic metal beta -(BEDT-TTF)2IBr2 are shown to originate from theslight warping of its Fermi surface rather than from independent smallcyclotron orbits.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

IBr2
###Slow oscillations of magnetoresistance in quasi-two-dimensional metals|M. V. Kartsovnik,P. D. Grigoriev,W. Biberacher,N. D. Kushch,P. Wyder###
(515128, 515130)
 Slow oscillations of the interlayer magnetoresistance observed in the layeredorganic metal beta -(BEDT-TTF)2IBr2 are shown to originate from theslight warping of its Fermi surface rather than from independent smallcyclotron orbits.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ge/Ge1-x
###Parabolic negative magnetoresistance in p-Ge/Ge1-xSix heterostructures|Yu. G. Arapov,G. I. Harus,O. A. Kuznetsov,V. N. Neverov,N. G. Shelushinina###
(515302, 515307)
Parabolic negative magnetoresistance in p<missing VAR>-Ge/Ge1-xSix heterostructures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[105.0, 1.5, 'T', 1],[141.0, 0.1, 'T', 2],[247.0, 0, 'are', 4]

B
###Field-induced metal-insulator Field-induced metal-insulator transition in the c-axis resistivity of graphite|H. Kempa,P. Esquinazi,Y. Kopelevich###
(515699, 515699)
 We show that the resistivity perpendicular rhoc<missing VAR> and parallel rhoa tothe basal planes of different graphite samples show similarmagnetic-field-driven metal-insulator-transitions at a field Bc<missing VAR> sim 0.1 Tapplied parallel to the c<missing VAR>-axis.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 0.1, 'T', 0]

B
###The angular dependent magnetoresistance in alpha-(BEDT-TTF)_2KHg(SCN)_4|Balázs Dóra,Kazumi Maki,Bojana Korin-Hamzic,Mario Basletic,Attila Virosztek,Mark V. Kartsovnik,Harald Müller###
(516148, 516148)
The angular dependent magnetoresistance in alpha-(BEDT-TTF)2KHg(SCN)4.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###The angular dependent magnetoresistance in alpha-(BEDT-TTF)_2KHg(SCN)_4|Balázs Dóra,Kazumi Maki,Bojana Korin-Hamzic,Mario Basletic,Attila Virosztek,Mark V. Kartsovnik,Harald Müller###
(516155, 516155)
The angular dependent magnetoresistance in alpha-(BEDT-TTF)2KHg(SCN)4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

KHg(SCN)4
###The angular dependent magnetoresistance in alpha-(BEDT-TTF)_2KHg(SCN)_4|Balázs Dóra,Kazumi Maki,Bojana Korin-Hamzic,Mario Basletic,Attila Virosztek,Mark V. Kartsovnik,Harald Müller###
(516158, 516165)
The angular dependent magnetoresistance in alpha-(BEDT-TTF)2KHg(SCN)4.
Featurization terminated normally.
0,0,0,0,0,0.2857142857142857,0.2857142857142857,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0.07142857142857142,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07142857142857142,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###The angular dependent magnetoresistance in alpha-(BEDT-TTF)_2KHg(SCN)_4|Balázs Dóra,Kazumi Maki,Bojana Korin-Hamzic,Mario Basletic,Attila Virosztek,Mark V. Kartsovnik,Harald Müller###
(516168, 516168)
 In spite of extensive experimental studies of the angular dependentmagnetoresistance (ADMR) of the low temperature phase (LTP) ofalpha-(BEDT-TTF)2KHg(SCN)4 about a decade ago, the nature of LTP remainselusive.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###The angular dependent magnetoresistance in alpha-(BEDT-TTF)_2KHg(SCN)_4|Balázs Dóra,Kazumi Maki,Bojana Korin-Hamzic,Mario Basletic,Attila Virosztek,Mark V. Kartsovnik,Harald Müller###
(516211, 516211)
 In spite of extensive experimental studies of the angular dependentmagnetoresistance (ADMR) of the low temperature phase (LTP) ofalpha-(BEDT-TTF)2KHg(SCN)4 about a decade ago, the nature of LTP remainselusive.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###The angular dependent magnetoresistance in alpha-(BEDT-TTF)_2KHg(SCN)_4|Balázs Dóra,Kazumi Maki,Bojana Korin-Hamzic,Mario Basletic,Attila Virosztek,Mark V. Kartsovnik,Harald Müller###
(516220, 516220)
 In spite of extensive experimental studies of the angular dependentmagnetoresistance (ADMR) of the low temperature phase (LTP) ofalpha-(BEDT-TTF)2KHg(SCN)4 about a decade ago, the nature of LTP remainselusive.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###The angular dependent magnetoresistance in alpha-(BEDT-TTF)_2KHg(SCN)_4|Balázs Dóra,Kazumi Maki,Bojana Korin-Hamzic,Mario Basletic,Attila Virosztek,Mark V. Kartsovnik,Harald Müller###
(516227, 516227)
 In spite of extensive experimental studies of the angular dependentmagnetoresistance (ADMR) of the low temperature phase (LTP) ofalpha-(BEDT-TTF)2KHg(SCN)4 about a decade ago, the nature of LTP remainselusive.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

KHg(SCN)4
###The angular dependent magnetoresistance in alpha-(BEDT-TTF)_2KHg(SCN)_4|Balázs Dóra,Kazumi Maki,Bojana Korin-Hamzic,Mario Basletic,Attila Virosztek,Mark V. Kartsovnik,Harald Müller###
(516230, 516237)
 In spite of extensive experimental studies of the angular dependentmagnetoresistance (ADMR) of the low temperature phase (LTP) ofalpha-(BEDT-TTF)2KHg(SCN)4 about a decade ago, the nature of LTP remainselusive.
Featurization terminated normally.
0,0,0,0,0,0.2857142857142857,0.2857142857142857,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0.07142857142857142,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07142857142857142,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###The angular dependent magnetoresistance in alpha-(BEDT-TTF)_2KHg(SCN)_4|Balázs Dóra,Kazumi Maki,Bojana Korin-Hamzic,Mario Basletic,Attila Virosztek,Mark V. Kartsovnik,Harald Müller###
(516256, 516256)
 In spite of extensive experimental studies of the angular dependentmagnetoresistance (ADMR) of the low temperature phase (LTP) ofalpha-(BEDT-TTF)2KHg(SCN)4 about a decade ago, the nature of LTP remainselusive.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###The angular dependent magnetoresistance in alpha-(BEDT-TTF)_2KHg(SCN)_4|Balázs Dóra,Kazumi Maki,Bojana Korin-Hamzic,Mario Basletic,Attila Virosztek,Mark V. Kartsovnik,Harald Müller###
(516287, 516287)
 Here we present a new study of ADMR of LTP in alpha-(ET)2 saltsassuming that LTP is unconventional charge density wave (UCD<missing VAR>W).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###The angular dependent magnetoresistance in alpha-(BEDT-TTF)_2KHg(SCN)_4|Balázs Dóra,Kazumi Maki,Bojana Korin-Hamzic,Mario Basletic,Attila Virosztek,Mark V. Kartsovnik,Harald Müller###
(516308, 516308)
 Here we present a new study of ADMR of LTP in alpha-(ET)2 saltsassuming that LTP is unconventional charge density wave (UCD<missing VAR>W).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

UC
###The angular dependent magnetoresistance in alpha-(BEDT-TTF)_2KHg(SCN)_4|Balázs Dóra,Kazumi Maki,Bojana Korin-Hamzic,Mario Basletic,Attila Virosztek,Mark V. Kartsovnik,Harald Müller###
(516321, 516322)
 Here we present a new study of ADMR of LTP in alpha-(ET)2 saltsassuming that LTP is unconventional charge density wave (UCD<missing VAR>W).
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###The angular dependent magnetoresistance in alpha-(BEDT-TTF)_2KHg(SCN)_4|Balázs Dóra,Kazumi Maki,Bojana Korin-Hamzic,Mario Basletic,Attila Virosztek,Mark V. Kartsovnik,Harald Müller###
(516324, 516324)
 Here we present a new study of ADMR of LTP in alpha-(ET)2 saltsassuming that LTP is unconventional charge density wave (UCD<missing VAR>W).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###The angular dependent magnetoresistance in alpha-(BEDT-TTF)_2KHg(SCN)_4|Balázs Dóra,Kazumi Maki,Bojana Korin-Hamzic,Mario Basletic,Attila Virosztek,Mark V. Kartsovnik,Harald Müller###
(516328, 516328)
 In the presenceof magnetic field the quasiparticle spectrum in UCD<missing VAR>W is quantized, which givesrise to striking ADMR in UCD<missing VAR>W.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

UC
###The angular dependent magnetoresistance in alpha-(BEDT-TTF)_2KHg(SCN)_4|Balázs Dóra,Kazumi Maki,Bojana Korin-Hamzic,Mario Basletic,Attila Virosztek,Mark V. Kartsovnik,Harald Müller###
(516349, 516350)
 In the presenceof magnetic field the quasiparticle spectrum in UCD<missing VAR>W is quantized, which givesrise to striking ADMR in UCD<missing VAR>W.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###The angular dependent magnetoresistance in alpha-(BEDT-TTF)_2KHg(SCN)_4|Balázs Dóra,Kazumi Maki,Bojana Korin-Hamzic,Mario Basletic,Attila Virosztek,Mark V. Kartsovnik,Harald Müller###
(516352, 516352)
 In the presenceof magnetic field the quasiparticle spectrum in UCD<missing VAR>W is quantized, which givesrise to striking ADMR in UCD<missing VAR>W.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

UC
###The angular dependent magnetoresistance in alpha-(BEDT-TTF)_2KHg(SCN)_4|Balázs Dóra,Kazumi Maki,Bojana Korin-Hamzic,Mario Basletic,Attila Virosztek,Mark V. Kartsovnik,Harald Müller###
(516377, 516378)
 In the presenceof magnetic field the quasiparticle spectrum in UCD<missing VAR>W is quantized, which givesrise to striking ADMR in UCD<missing VAR>W.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###The angular dependent magnetoresistance in alpha-(BEDT-TTF)_2KHg(SCN)_4|Balázs Dóra,Kazumi Maki,Bojana Korin-Hamzic,Mario Basletic,Attila Virosztek,Mark V. Kartsovnik,Harald Müller###
(516380, 516380)
 In the presenceof magnetic field the quasiparticle spectrum in UCD<missing VAR>W is quantized, which givesrise to striking ADMR in UCD<missing VAR>W.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###The angular dependent magnetoresistance in alpha-(BEDT-TTF)_2KHg(SCN)_4|Balázs Dóra,Kazumi Maki,Bojana Korin-Hamzic,Mario Basletic,Attila Virosztek,Mark V. Kartsovnik,Harald Müller###
(516414, 516414)
 The present model appears to account for manyexisting ADMR data of alpha-(BEDT-TTF)2KHg(SCN)4 remarkably well.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###The angular dependent magnetoresistance in alpha-(BEDT-TTF)_2KHg(SCN)_4|Balázs Dóra,Kazumi Maki,Bojana Korin-Hamzic,Mario Basletic,Attila Virosztek,Mark V. Kartsovnik,Harald Müller###
(516421, 516421)
 The present model appears to account for manyexisting ADMR data of alpha-(BEDT-TTF)2KHg(SCN)4 remarkably well.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

KHg(SCN)4
###The angular dependent magnetoresistance in alpha-(BEDT-TTF)_2KHg(SCN)_4|Balázs Dóra,Kazumi Maki,Bojana Korin-Hamzic,Mario Basletic,Attila Virosztek,Mark V. Kartsovnik,Harald Müller###
(516424, 516431)
 The present model appears to account for manyexisting ADMR data of alpha-(BEDT-TTF)2KHg(SCN)4 remarkably well.
Featurization terminated normally.
0,0,0,0,0,0.2857142857142857,0.2857142857142857,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0.07142857142857142,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07142857142857142,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ca3Ru2O7
###Complex Quantum Phenomena in a Bilayered Calcium Ruthenate|G. Cao,L. Balicas,Y. Xin,E. Dagotto,J. E. Crow,C. S. Nelson,J. P. Hill###
(516463, 516468)
 Ca3Ru2O7 undergoes an antiferromagnetic transition atT<missing VAR>textN56 K, followed by a Mott-like (M<missing VAR>I) transition atTtextMI48 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N56
###Complex Quantum Phenomena in a Bilayered Calcium Ruthenate|G. Cao,L. Balicas,Y. Xin,E. Dagotto,J. E. Crow,C. S. Nelson,J. P. Hill###
(516483, 516484)
 Ca3Ru2O7 undergoes an antiferromagnetic transition atT<missing VAR>textN56 K, followed by a Mott-like (M<missing VAR>I) transition atTtextMI48 K.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Complex Quantum Phenomena in a Bilayered Calcium Ruthenate|G. Cao,L. Balicas,Y. Xin,E. Dagotto,J. E. Crow,C. S. Nelson,J. P. Hill###
(516486, 516486)
 Ca3Ru2O7 undergoes an antiferromagnetic transition atT<missing VAR>textN56 K, followed by a Mott-like (M<missing VAR>I) transition atTtextMI48 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Complex Quantum Phenomena in a Bilayered Calcium Ruthenate|G. Cao,L. Balicas,Y. Xin,E. Dagotto,J. E. Crow,C. S. Nelson,J. P. Hill###
(516501, 516501)
 Ca3Ru2O7 undergoes an antiferromagnetic transition atT<missing VAR>textN56 K, followed by a Mott-like (M<missing VAR>I) transition atTtextMI48 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I48
###Complex Quantum Phenomena in a Bilayered Calcium Ruthenate|G. Cao,L. Balicas,Y. Xin,E. Dagotto,J. E. Crow,C. S. Nelson,J. P. Hill###
(516512, 516513)
 Ca3Ru2O7 undergoes an antiferromagnetic transition atT<missing VAR>textN56 K, followed by a Mott-like (M<missing VAR>I) transition atTtextMI48 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Complex Quantum Phenomena in a Bilayered Calcium Ruthenate|G. Cao,L. Balicas,Y. Xin,E. Dagotto,J. E. Crow,C. S. Nelson,J. P. Hill###
(516515, 516515)
 Ca3Ru2O7 undergoes an antiferromagnetic transition atT<missing VAR>textN56 K, followed by a Mott-like (M<missing VAR>I) transition atTtextMI48 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Complex Quantum Phenomena in a Bilayered Calcium Ruthenate|G. Cao,L. Balicas,Y. Xin,E. Dagotto,J. E. Crow,C. S. Nelson,J. P. Hill###
(516541, 516541)
 This nonmetallic ground state, with a charge gap of 0.1e<missing VAR>V, is suppressed by a highly anisotropic metamagnetic transition that leads toa fully spin-polarized metallic state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Ising Quantum Hall Ferromagnet in Magnetically Doped Quantum Wells|J. Jaroszynski,T. Andrearczyk,G. Karczewski,J. Wrobel,T. Wojtowicz,E. Papis,E. Kaminska,A. Piotrowska,Dragana Popovic,T. Dietl###
(516962, 516962)
 We report on the observation of the Ising quantum Hall ferromagnet with Curietemperature T<missing VAR>C as high as 2 K in a modulation-doped (Cd,Mn)Teheterostructure.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 2, 'K', 0]

Cd
###Ising Quantum Hall Ferromagnet in Magnetically Doped Quantum Wells|J. Jaroszynski,T. Andrearczyk,G. Karczewski,J. Wrobel,T. Wojtowicz,E. Papis,E. Kaminska,A. Piotrowska,Dragana Popovic,T. Dietl###
(516980, 516980)
 We report on the observation of the Ising quantum Hall ferromagnet with Curietemperature T<missing VAR>C as high as 2 K in a modulation-doped (Cd,Mn)Teheterostructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 2, 'K', 0]

Mn
###Ising Quantum Hall Ferromagnet in Magnetically Doped Quantum Wells|J. Jaroszynski,T. Andrearczyk,G. Karczewski,J. Wrobel,T. Wojtowicz,E. Papis,E. Kaminska,A. Piotrowska,Dragana Popovic,T. Dietl###
(516982, 516982)
 We report on the observation of the Ising quantum Hall ferromagnet with Curietemperature T<missing VAR>C as high as 2 K in a modulation-doped (Cd,Mn)Teheterostructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 2, 'K', 0]

Te
###Ising Quantum Hall Ferromagnet in Magnetically Doped Quantum Wells|J. Jaroszynski,T. Andrearczyk,G. Karczewski,J. Wrobel,T. Wojtowicz,E. Papis,E. Kaminska,A. Piotrowska,Dragana Popovic,T. Dietl###
(516984, 516984)
 We report on the observation of the Ising quantum Hall ferromagnet with Curietemperature T<missing VAR>C as high as 2 K in a modulation-doped (Cd,Mn)Teheterostructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 2, 'K', 0]

In
###Ising Quantum Hall Ferromagnet in Magnetically Doped Quantum Wells|J. Jaroszynski,T. Andrearczyk,G. Karczewski,J. Wrobel,T. Wojtowicz,E. Papis,E. Kaminska,A. Piotrowska,Dragana Popovic,T. Dietl###
(516990, 516990)
 In this system field-induced crossing of Landau levels occursdue to the giant spin-splitting effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 2, 'K', 1]

Mn
###Ising Quantum Hall Ferromagnet in Magnetically Doped Quantum Wells|J. Jaroszynski,T. Andrearczyk,G. Karczewski,J. Wrobel,T. Wojtowicz,E. Papis,E. Kaminska,A. Piotrowska,Dragana Popovic,T. Dietl###
(517096, 517096)
 Magnetoresistance data, collected overa wide range of temperatures, magnetic fields, tilt angles, and electrondensities, are discussed taking into account both Coulomb electron-electroninteractions and s-d coupling to Mn spin fluctuations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 2, 'K', 2]

C
###Ising Quantum Hall Ferromagnet in Magnetically Doped Quantum Wells|J. Jaroszynski,T. Andrearczyk,G. Karczewski,J. Wrobel,T. Wojtowicz,E. Papis,E. Kaminska,A. Piotrowska,Dragana Popovic,T. Dietl###
(517125, 517125)
 The critical behaviorof the resistance spikes at T<missing VAR> to T<missing VAR>C corroborates theoreticalsuggestions that the ferromagnet is destroyed by domain excitations.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 2, 'K', 3]

FeSb2
###Anisotropy and large magnetoresistance in narrow gap semiconductor FeSb2|C. Petrovic,J. W. Kim,S. L. Bud'ko,A. I. Goldman,P. C. Canfield,W. Choe,G. J. Miller###
(517650, 517652)
Anisotropy and large magnetoresistance in narrow gap semiconductor FeSb2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 100, 'K', 2],[141.0, 40, 'and', 3],[142.0, 80, 'K', 3],[196.0, 2200, '%', 4]

FeSb2
###Anisotropy and large magnetoresistance in narrow gap semiconductor FeSb2|C. Petrovic,J. W. Kim,S. L. Bud'ko,A. I. Goldman,P. C. Canfield,W. Choe,G. J. Miller###
(517681, 517683)
 A study of the anisotropy in magnetic, transport and magnetotransportproperties of FeSb2 has been made on large single crystals grown from Sb flux.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 100, 'K', 1],[110.0, 40, 'and', 2],[111.0, 80, 'K', 2],[165.0, 2200, '%', 3]

Sb
###Anisotropy and large magnetoresistance in narrow gap semiconductor FeSb2|C. Petrovic,J. W. Kim,S. L. Bud'ko,A. I. Goldman,P. C. Canfield,W. Choe,G. J. Miller###
(517703, 517703)
 A study of the anisotropy in magnetic, transport and magnetotransportproperties of FeSb2 has been made on large single crystals grown from Sb flux.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 100, 'K', 1],[90.0, 40, 'and', 2],[91.0, 80, 'K', 2],[145.0, 2200, '%', 3]

FeSb2
###Anisotropy and large magnetoresistance in narrow gap semiconductor FeSb2|C. Petrovic,J. W. Kim,S. L. Bud'ko,A. I. Goldman,P. C. Canfield,W. Choe,G. J. Miller###
(517715, 517717)
Magnetic susceptibility of FeSb2 shows diamagnetic to paramagnetic crossoveraround 100K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 100, 'K', 0],[76.0, 40, 'and', 1],[77.0, 80, 'K', 1],[131.0, 2200, '%', 2]

In
###Anisotropy and large magnetoresistance in narrow gap semiconductor FeSb2|C. Petrovic,J. W. Kim,S. L. Bud'ko,A. I. Goldman,P. C. Canfield,W. Choe,G. J. Miller###
(517797, 517797)
 In H70k<missing VAR>Oesemiconducting transport is restored for T<missing VAR><300K, resulting in largemagnetoresistance [rho(70k<missing VAR>Oe)-rho(0)]/rho(0)2200% in the crossover temperaturerange<missing PERIOD>
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 100, 'K', 2],[4.0, 40, 'and', 1],[3.0, 80, 'K', 1],[51.0, 2200, '%', 0]

H70
###Anisotropy and large magnetoresistance in narrow gap semiconductor FeSb2|C. Petrovic,J. W. Kim,S. L. Bud'ko,A. I. Goldman,P. C. Canfield,W. Choe,G. J. Miller###
(517799, 517800)
 In H70k<missing VAR>Oesemiconducting transport is restored for T<missing VAR><300K, resulting in largemagnetoresistance [rho(70k<missing VAR>Oe)-rho(0)]/rho(0)2200% in the crossover temperaturerange<missing PERIOD>
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 100, 'K', 2],[6.0, 40, 'and', 1],[5.0, 80, 'K', 1],[48.0, 2200, '%', 0]

K
###Anisotropy and large magnetoresistance in narrow gap semiconductor FeSb2|C. Petrovic,J. W. Kim,S. L. Bud'ko,A. I. Goldman,P. C. Canfield,W. Choe,G. J. Miller###
(517818, 517818)
 In H70k<missing VAR>Oesemiconducting transport is restored for T<missing VAR><300K, resulting in largemagnetoresistance [rho(70k<missing VAR>Oe)-rho(0)]/rho(0)2200% in the crossover temperaturerange<missing PERIOD>
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 100, 'K', 2],[25.0, 40, 'and', 1],[24.0, 80, 'K', 1],[30.0, 2200, '%', 0]

Ga
###Boltzmann theory of engineered anisotropic magnetoresistance in (Ga,Mn)As|T. Jungwirth,M. Abolfath,Jairo Sinova,J. Kucera,A. H. MacDonald###
(517885, 517885)
Boltzmann theory of engineered anisotropic magnetoresistance in (Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Boltzmann theory of engineered anisotropic magnetoresistance in (Ga,Mn)As|T. Jungwirth,M. Abolfath,Jairo Sinova,J. Kucera,A. H. MacDonald###
(517887, 517887)
Boltzmann theory of engineered anisotropic magnetoresistance in (Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Boltzmann theory of engineered anisotropic magnetoresistance in (Ga,Mn)As|T. Jungwirth,M. Abolfath,Jairo Sinova,J. Kucera,A. H. MacDonald###
(517889, 517889)
Boltzmann theory of engineered anisotropic magnetoresistance in (Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###Boltzmann theory of engineered anisotropic magnetoresistance in (Ga,Mn)As|T. Jungwirth,M. Abolfath,Jairo Sinova,J. Kucera,A. H. MacDonald###
(517915, 517915)
 We report on a theoretical study of dc transport coefficients in (Ga,Mn)Asdiluted magnetic semiconductor ferromagnets that accounts for quasiparticlescattering from ionized Mn2 acceptors with a local moment S5/2 andfrom non-magnetic compensating defects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Boltzmann theory of engineered anisotropic magnetoresistance in (Ga,Mn)As|T. Jungwirth,M. Abolfath,Jairo Sinova,J. Kucera,A. H. MacDonald###
(517917, 517917)
 We report on a theoretical study of dc transport coefficients in (Ga,Mn)Asdiluted magnetic semiconductor ferromagnets that accounts for quasiparticlescattering from ionized Mn2 acceptors with a local moment S5/2 andfrom non-magnetic compensating defects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Boltzmann theory of engineered anisotropic magnetoresistance in (Ga,Mn)As|T. Jungwirth,M. Abolfath,Jairo Sinova,J. Kucera,A. H. MacDonald###
(517919, 517919)
 We report on a theoretical study of dc transport coefficients in (Ga,Mn)Asdiluted magnetic semiconductor ferromagnets that accounts for quasiparticlescattering from ionized Mn2 acceptors with a local moment S5/2 andfrom non-magnetic compensating defects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn2
###Boltzmann theory of engineered anisotropic magnetoresistance in (Ga,Mn)As|T. Jungwirth,M. Abolfath,Jairo Sinova,J. Kucera,A. H. MacDonald###
(517945, 517946)
 We report on a theoretical study of dc transport coefficients in (Ga,Mn)Asdiluted magnetic semiconductor ferromagnets that accounts for quasiparticlescattering from ionized Mn2 acceptors with a local moment S5/2 andfrom non-magnetic compensating defects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S5
###Boltzmann theory of engineered anisotropic magnetoresistance in (Ga,Mn)As|T. Jungwirth,M. Abolfath,Jairo Sinova,J. Kucera,A. H. MacDonald###
(517958, 517959)
 We report on a theoretical study of dc transport coefficients in (Ga,Mn)Asdiluted magnetic semiconductor ferromagnets that accounts for quasiparticlescattering from ionized Mn2 acceptors with a local moment S5/2 andfrom non-magnetic compensating defects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Boltzmann theory of engineered anisotropic magnetoresistance in (Ga,Mn)As|T. Jungwirth,M. Abolfath,Jairo Sinova,J. Kucera,A. H. MacDonald###
(517977, 517977)
 In metallic samples Boltzmann transporttheory with Golden rule scattering rates accounts for the principle trends ofthe measured difference between resistances for magnetizations parallel andperpendicular to the current.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Spin Diffusion in Double-Exchange Manganites|A. L. Chernyshev,R. S. Fishman###
(518411, 518411)
 We demonstrate that thespin-diffusion coefficient becomes independent of the Hunds<missing VAR> coupling J<missing VAR>H in therange of parameters J<missing VAR>HS >> W >> T<missing VAR>, W being the bandwidth, relevant to colossalmagnetoresistive manganites in the metallic part of their phase diagram.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HS
###Spin Diffusion in Double-Exchange Manganites|A. L. Chernyshev,R. S. Fishman###
(518425, 518426)
 We demonstrate that thespin-diffusion coefficient becomes independent of the Hunds<missing VAR> coupling J<missing VAR>H in therange of parameters J<missing VAR>HS >> W >> T<missing VAR>, W being the bandwidth, relevant to colossalmagnetoresistive manganites in the metallic part of their phase diagram.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Spin Diffusion in Double-Exchange Manganites|A. L. Chernyshev,R. S. Fishman###
(518431, 518431)
 We demonstrate that thespin-diffusion coefficient becomes independent of the Hunds<missing VAR> coupling J<missing VAR>H in therange of parameters J<missing VAR>HS >> W >> T<missing VAR>, W being the bandwidth, relevant to colossalmagnetoresistive manganites in the metallic part of their phase diagram.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Spin Diffusion in Double-Exchange Manganites|A. L. Chernyshev,R. S. Fishman###
(518439, 518439)
 We demonstrate that thespin-diffusion coefficient becomes independent of the Hunds<missing VAR> coupling J<missing VAR>H in therange of parameters J<missing VAR>HS >> W >> T<missing VAR>, W being the bandwidth, relevant to colossalmagnetoresistive manganites in the metallic part of their phase diagram.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.5Sr0.5CoO3
###Magnetoresistance and magnetic anisotropy in La$_{0.5}$Sr$_{0.5}$CoO$_{3-δ}$ film|B. I. Belevtsev,V. B. Krasovitsky,A. S. Panfilov,I. N. Chukanova###
(518574, 518580)
Magnetoresistance and magnetic anisotropy in La0.5Sr0.5CoO3- film.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.5Sr0.5CoO3
###Magnetoresistance and magnetic anisotropy in La$_{0.5}$Sr$_{0.5}$CoO$_{3-δ}$ film|B. I. Belevtsev,V. B. Krasovitsky,A. S. Panfilov,I. N. Chukanova###
(518598, 518604)
 The magnetic and transport properties of La0.5Sr0.5CoO3-deltafilm grown on a LaAlO3 substrate by pulsed-laser deposition are studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaAlO3
###Magnetoresistance and magnetic anisotropy in La$_{0.5}$Sr$_{0.5}$CoO$_{3-δ}$ film|B. I. Belevtsev,V. B. Krasovitsky,A. S. Panfilov,I. N. Chukanova###
(518617, 518620)
 The magnetic and transport properties of La0.5Sr0.5CoO3-deltafilm grown on a LaAlO3 substrate by pulsed-laser deposition are studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Multivalued dependence of the magnetoresistance on the quantized conductance in nanosize magnetic contacts|L. R. Tagirov,B. P. Vodopyanov,K. B. Efetov###
(519146, 519146)
 It isfound that the magnetoresistance MR is a multivalued function of the quantizedconductance at the parallel alignment of the magnetizations sigmaF.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Multivalued dependence of the magnetoresistance on the quantized conductance in nanosize magnetic contacts|L. R. Tagirov,B. P. Vodopyanov,K. B. Efetov###
(519181, 519181)
 This leadsus to the conclusion that experimentally observed large fluctuations of MRversus sigmaF are rather due to the conductance quantization than tomeasurement errors or a poor reproducibility of the results.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magnetic Miniband Structure and Quantum Oscillations in Lateral Semiconductor Superlattices|M. Langenbuch,M. Suhrke,U. Roessler###
(519415, 519415)
 In addition, we predict oscillations ofopposite phase in the component perpendicular to the modulation not yetobserved experimentally.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Even-odd effects in magnetoresistance of ferromagnetic domain walls|M. Dzero,L. P. Gor'kov,A. K. Zvezdin,K. A. Zvezdin###
(519752, 519752)
 Absence of transverse magnetization components allows considerablespin accumulation assuming the spin relaxation length, L<missing VAR>S, is large enough.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnO3
###Colossal magnetoresistance in manganites as a multicritical phenomenon|Shuichi Murakami,Naoto Nagaosa###
(520048, 520050)
 The colossal magnetoresistance in manganites AMnO3 is studied from theviewpoint of multicritical phenomena.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Colossal magnetoresistance in manganites as a multicritical phenomenon|Shuichi Murakami,Naoto Nagaosa###
(520236, 520236)
 Furthermore, we obtain a universal scaling relationfor the H/M-M2 plot (Arrott plot), which fits rather well with theexperimental data, providing the further evidence for the enhanced fluctuation.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Dephasing by extremely dilute magnetic impurities revealed by Aharonov-Bohm oscillations|F. Pierre,Norman O. Birge###
(520367, 520367)
 We have probed the magnetic field dependence of the electron phase coherencetime tauphi by measuring the Aharonov-Bohm conductance oscillations ofmesoscopic Cu rings.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 1, 'K', 1]

GaAs
###Role of density imbalance in an interacting bilayer hole system|E. Tutuc,S. Melinte,E. P. De Poortere,R. Pillarisetty,M. Shayegan###
(520541, 520542)
 We study interacting GaAs hole bilayers in the limit of zero tunneling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 1, ',', 1]

H
###Role of density imbalance in an interacting bilayer hole system|E. Tutuc,S. Melinte,E. P. De Poortere,R. Pillarisetty,M. Shayegan###
(520594, 520594)
 Whenthe layers have equal densities, we observe a phase coherent bilayer quantumHall (Q<missing VAR>H) state at total filling factor nu1, flanked by insulating phasesat nearby fillings which suggest the formation of a pinned, bilayer Wignercrystal.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 1, ',', 0]

As
###Role of density imbalance in an interacting bilayer hole system|E. Tutuc,S. Melinte,E. P. De Poortere,R. Pillarisetty,M. Shayegan###
(520649, 520649)
 As we transfer charge from one layer to another, the insulating phasesdisappear while, surprisingly, the nu1 Q<missing VAR>H state becomes stronger.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 1, ',', 1]

H
###Role of density imbalance in an interacting bilayer hole system|E. Tutuc,S. Melinte,E. P. De Poortere,R. Pillarisetty,M. Shayegan###
(520689, 520689)
 As we transfer charge from one layer to another, the insulating phasesdisappear while, surprisingly, the nu1 Q<missing VAR>H state becomes stronger.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 1, ',', 1]

Al
###Magnetotransport properties of a polarization-doped three-dimensional electron slab|D. Jena,S. Heikman,J. S. Speck,A. C. Gossard,U. K. Mishra,A. Link,O. Ambacher###
(520817, 520817)
 We present evidence of strong Shubnikov-de-Haas magnetoresistanceoscillations in a polarization-doped degenerate three-dimensional electron slabin an Alx<missing VAR>Ga1-xN semiconductor system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 0.3, 'ps', 2]

Ga1-xN
###Magnetotransport properties of a polarization-doped three-dimensional electron slab|D. Jena,S. Heikman,J. S. Speck,A. C. Gossard,U. K. Mishra,A. Link,O. Ambacher###
(520819, 520823)
 We present evidence of strong Shubnikov-de-Haas magnetoresistanceoscillations in a polarization-doped degenerate three-dimensional electron slabin an Alx<missing VAR>Ga1-xN semiconductor system.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[99.0, 0.3, 'ps', 2]

Al
###Magnetotransport properties of a polarization-doped three-dimensional electron slab|D. Jena,S. Heikman,J. S. Speck,A. C. Gossard,U. K. Mishra,A. Link,O. Ambacher###
(520952, 520952)
 Analysis of scattering processes helpsus extract an alloy scattering parameter for the Alx<missing VAR>Ga1-xN materialsystem to be V01.8e<missing VAR>V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 0.3, 'ps', 1]

Ga1-xN
###Magnetotransport properties of a polarization-doped three-dimensional electron slab|D. Jena,S. Heikman,J. S. Speck,A. C. Gossard,U. K. Mishra,A. Link,O. Ambacher###
(520954, 520958)
 Analysis of scattering processes helpsus extract an alloy scattering parameter for the Alx<missing VAR>Ga1-xN materialsystem to be V01.8e<missing VAR>V.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[32.0, 0.3, 'ps', 1]

V01.8
###Magnetotransport properties of a polarization-doped three-dimensional electron slab|D. Jena,S. Heikman,J. S. Speck,A. C. Gossard,U. K. Mishra,A. Link,O. Ambacher###
(520969, 520971)
 Analysis of scattering processes helpsus extract an alloy scattering parameter for the Alx<missing VAR>Ga1-xN materialsystem to be V01.8e<missing VAR>V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 0.3, 'ps', 1]

V
###Magnetotransport properties of a polarization-doped three-dimensional electron slab|D. Jena,S. Heikman,J. S. Speck,A. C. Gossard,U. K. Mishra,A. Link,O. Ambacher###
(520973, 520973)
 Analysis of scattering processes helpsus extract an alloy scattering parameter for the Alx<missing VAR>Ga1-xN materialsystem to be V01.8e<missing VAR>V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 0.3, 'ps', 1]

SI
###High-field side of Superconductor-Insulator Transition|Tatyana I. Baturina,D. R. Islamov,Z. D. Kvon,M. R. Baklanov,A. Satta###
(521288, 521289)
 We report the experimental observation of a magnetic-field-tunedsuperconductor-insulator transition (SIT) in ultrathin TiN films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TiN
###High-field side of Superconductor-Insulator Transition|Tatyana I. Baturina,D. R. Islamov,Z. D. Kvon,M. R. Baklanov,A. Satta###
(521297, 521298)
 We report the experimental observation of a magnetic-field-tunedsuperconductor-insulator transition (SIT) in ultrathin TiN films.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SI
###High-field side of Superconductor-Insulator Transition|Tatyana I. Baturina,D. R. Islamov,Z. D. Kvon,M. R. Baklanov,A. Satta###
(521419, 521420)
 The temperaturedependences of the isomagnetic resistance data on the high-field side of theSIT<missing VAR> have been analyzed and the transition from insulating to metallic phase isfound, with at high fields the zero-temperature asymptotic value of theresistance being equal to h/e2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Unconventional charge density wave in the organic conductor alpha-(BEDT-TTF)_2KHg(SCN)_4|Kazumi Maki,Balázs Dóra,Mark Kartsovnik,Attila Virosztek,Bojana Korin-Hamzic,Mario Basletic###
(521515, 521515)
Unconventional charge density wave in the organic conductor alpha-(BEDT-TTF)2KHg(SCN)4.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Unconventional charge density wave in the organic conductor alpha-(BEDT-TTF)_2KHg(SCN)_4|Kazumi Maki,Balázs Dóra,Mark Kartsovnik,Attila Virosztek,Bojana Korin-Hamzic,Mario Basletic###
(521522, 521522)
Unconventional charge density wave in the organic conductor alpha-(BEDT-TTF)2KHg(SCN)4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

KHg(SCN)4
###Unconventional charge density wave in the organic conductor alpha-(BEDT-TTF)_2KHg(SCN)_4|Kazumi Maki,Balázs Dóra,Mark Kartsovnik,Attila Virosztek,Bojana Korin-Hamzic,Mario Basletic###
(521525, 521532)
Unconventional charge density wave in the organic conductor alpha-(BEDT-TTF)2KHg(SCN)4.
Featurization terminated normally.
0,0,0,0,0,0.2857142857142857,0.2857142857142857,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0.07142857142857142,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07142857142857142,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Unconventional charge density wave in the organic conductor alpha-(BEDT-TTF)_2KHg(SCN)_4|Kazumi Maki,Balázs Dóra,Mark Kartsovnik,Attila Virosztek,Bojana Korin-Hamzic,Mario Basletic###
(521546, 521546)
 The low temperature phase (LTP) of alpha-(BEDT-TTF)2KHg(SCN)4 salt is knownfor its surprising angular dependent magnetoresistance (ADMR), which has beenstudied intensively in the last decade.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Unconventional charge density wave in the organic conductor alpha-(BEDT-TTF)_2KHg(SCN)_4|Kazumi Maki,Balázs Dóra,Mark Kartsovnik,Attila Virosztek,Bojana Korin-Hamzic,Mario Basletic###
(521554, 521554)
 The low temperature phase (LTP) of alpha-(BEDT-TTF)2KHg(SCN)4 salt is knownfor its surprising angular dependent magnetoresistance (ADMR), which has beenstudied intensively in the last decade.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Unconventional charge density wave in the organic conductor alpha-(BEDT-TTF)_2KHg(SCN)_4|Kazumi Maki,Balázs Dóra,Mark Kartsovnik,Attila Virosztek,Bojana Korin-Hamzic,Mario Basletic###
(521561, 521561)
 The low temperature phase (LTP) of alpha-(BEDT-TTF)2KHg(SCN)4 salt is knownfor its surprising angular dependent magnetoresistance (ADMR), which has beenstudied intensively in the last decade.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

KHg(SCN)4
###Unconventional charge density wave in the organic conductor alpha-(BEDT-TTF)_2KHg(SCN)_4|Kazumi Maki,Balázs Dóra,Mark Kartsovnik,Attila Virosztek,Bojana Korin-Hamzic,Mario Basletic###
(521564, 521571)
 The low temperature phase (LTP) of alpha-(BEDT-TTF)2KHg(SCN)4 salt is knownfor its surprising angular dependent magnetoresistance (ADMR), which has beenstudied intensively in the last decade.
Featurization terminated normally.
0,0,0,0,0,0.2857142857142857,0.2857142857142857,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0.07142857142857142,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07142857142857142,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Unconventional charge density wave in the organic conductor alpha-(BEDT-TTF)_2KHg(SCN)_4|Kazumi Maki,Balázs Dóra,Mark Kartsovnik,Attila Virosztek,Bojana Korin-Hamzic,Mario Basletic###
(521633, 521633)
 However, the nature of the LTP has notbeen understood until now.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

UC
###Unconventional charge density wave in the organic conductor alpha-(BEDT-TTF)_2KHg(SCN)_4|Kazumi Maki,Balázs Dóra,Mark Kartsovnik,Attila Virosztek,Bojana Korin-Hamzic,Mario Basletic###
(521680, 521681)
 Here we analyse theoretically ADMR in unconventional(or nodal) charge density wave (UCD<missing VAR>W).
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Unconventional charge density wave in the organic conductor alpha-(BEDT-TTF)_2KHg(SCN)_4|Kazumi Maki,Balázs Dóra,Mark Kartsovnik,Attila Virosztek,Bojana Korin-Hamzic,Mario Basletic###
(521683, 521683)
 Here we analyse theoretically ADMR in unconventional(or nodal) charge density wave (UCD<missing VAR>W).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Unconventional charge density wave in the organic conductor alpha-(BEDT-TTF)_2KHg(SCN)_4|Kazumi Maki,Balázs Dóra,Mark Kartsovnik,Attila Virosztek,Bojana Korin-Hamzic,Mario Basletic###
(521687, 521687)
 In magnetic field the quasiparticlespectrum in UCD<missing VAR>W is quantized, which gives rise to spectacular ADMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

UC
###Unconventional charge density wave in the organic conductor alpha-(BEDT-TTF)_2KHg(SCN)_4|Kazumi Maki,Balázs Dóra,Mark Kartsovnik,Attila Virosztek,Bojana Korin-Hamzic,Mario Basletic###
(521702, 521703)
 In magnetic field the quasiparticlespectrum in UCD<missing VAR>W is quantized, which gives rise to spectacular ADMR.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Unconventional charge density wave in the organic conductor alpha-(BEDT-TTF)_2KHg(SCN)_4|Kazumi Maki,Balázs Dóra,Mark Kartsovnik,Attila Virosztek,Bojana Korin-Hamzic,Mario Basletic###
(521705, 521705)
 In magnetic field the quasiparticlespectrum in UCD<missing VAR>W is quantized, which gives rise to spectacular ADMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Unconventional charge density wave in the organic conductor alpha-(BEDT-TTF)_2KHg(SCN)_4|Kazumi Maki,Balázs Dóra,Mark Kartsovnik,Attila Virosztek,Bojana Korin-Hamzic,Mario Basletic###
(521760, 521760)
 Thepresent model accounts for many striking features of ADMR data inalpha-(BEDT-TTF)2KHg(SCN)4.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Unconventional charge density wave in the organic conductor alpha-(BEDT-TTF)_2KHg(SCN)_4|Kazumi Maki,Balázs Dóra,Mark Kartsovnik,Attila Virosztek,Bojana Korin-Hamzic,Mario Basletic###
(521767, 521767)
 Thepresent model accounts for many striking features of ADMR data inalpha-(BEDT-TTF)2KHg(SCN)4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

KHg(SCN)4
###Unconventional charge density wave in the organic conductor alpha-(BEDT-TTF)_2KHg(SCN)_4|Kazumi Maki,Balázs Dóra,Mark Kartsovnik,Attila Virosztek,Bojana Korin-Hamzic,Mario Basletic###
(521770, 521777)
 Thepresent model accounts for many striking features of ADMR data inalpha-(BEDT-TTF)2KHg(SCN)4.
Featurization terminated normally.
0,0,0,0,0,0.2857142857142857,0.2857142857142857,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0.07142857142857142,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07142857142857142,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi
###Low Temperature Metallic State of Ultrathin Films of Bismuth|L. M. Hernandez,Kevin A. Parendo,A. M. Goldman###
(521852, 521852)
 temperature have been carried out on asequence of quench-condensed ultrathin films of amorphous bismuth (a-Bi).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 0.1, 'K', 1],[71.0, 0.14, 'K', 1]

In
###Indications of coherence-incoherence crossover in layered transport|Urban Lundin,Ross H. McKenzie###
(522072, 522072)
 In order tobetter understand interlayer transport we consider a concrete model whichexhibits this behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Na0.75CoO2
###Unconventional magnetic transition and transport behavior in Na0.75CoO2|T. Motohashi,R. Ueda,E. Naujalis,T. Tojo,I. Terasaki,T. Atake,M. Karppinen,H. Yamauchi###
(522258, 522262)
Unconventional magnetic transition and transport behavior in Na0.75CoO2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5333333333333333,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.26666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 0.75, ',', 2],[74.0, 22, 'K', 2]

CoO2
###Unconventional magnetic transition and transport behavior in Na0.75CoO2|T. Motohashi,R. Ueda,E. Naujalis,T. Tojo,I. Terasaki,T. Atake,M. Karppinen,H. Yamauchi###
(522296, 522298)
 Here we report an unconventional magnetic and transport phenomenon in alayered cobalt oxide, NaxCoO2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 0.75, ',', 1],[38.0, 22, 'K', 1]

Tm
###Unconventional magnetic transition and transport behavior in Na0.75CoO2|T. Motohashi,R. Ueda,E. Naujalis,T. Tojo,I. Terasaki,T. Atake,M. Karppinen,H. Yamauchi###
(522334, 522334)
 Only for x<missing VAR>  0.75, a magnetic transition of thesecond order was clearly detected at Tm  22 K where an apparent specific-heatjump, an onset of extremely small spontaneous magnetization, and a kink inresistivity came in.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 0.75, ',', 0],[2.0, 22, 'K', 0]

Tm
###Unconventional magnetic transition and transport behavior in Na0.75CoO2|T. Motohashi,R. Ueda,E. Naujalis,T. Tojo,I. Terasaki,T. Atake,M. Karppinen,H. Yamauchi###
(522400, 522400)
 Moreover large positive magnetoresistance effect wasobserved below Tm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 0.75, ',', 1],[64.0, 22, 'K', 1]

Na0.75CoO2
###Unconventional magnetic transition and transport behavior in Na0.75CoO2|T. Motohashi,R. Ueda,E. Naujalis,T. Tojo,I. Terasaki,T. Atake,M. Karppinen,H. Yamauchi###
(522453, 522457)
 These features of the transition strongly indicate theappearance of an unusual electronic state that may be attributed to thestrongly-correlated electrons in Na0.75CoO2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5333333333333333,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.26666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 0.75, ',', 2],[117.0, 22, 'K', 2]

Ni
###Magneto-transport properties of dilute granular ferromagnets|A. Cohen,A. Frydman,R. Berkovits###
(522507, 522507)
 We present magnetoresistance (MR) measurements performed on quench condensedgranular Ni thin films which are on the verge of electric continuity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magneto-transport properties of dilute granular ferromagnets|A. Cohen,A. Frydman,R. Berkovits###
(522530, 522530)
 In thesesystems the electric conductivity is believed to be governed by the resistancebetween a very small number of grains.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Screening and inplane magnetoresistance of anisotropic two-dimensional gas|V. S. Khrapai###
(522751, 522751)
 In order to split the influence of the orbital and spin effects on theinplane magnetoresistance of a quasi two-dimensional gas we derive its linearresponse function and dielectric function for the case of anisotropic effectivemass.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co/Cu/Co
###Current-Induced Magnetization Reversal in High Magnetic Fields in Co/Cu/Co Nanopillars|B. Oezyilmaz,A. D. Kent,D. Monsma,J. Z. Sun,M. J. Rooks,R. H. Koch###
(522961, 522965)
Current-Induced Magnetization Reversal in High Magnetic Fields in Co/Cu/Co Nanopillars.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Co/Cu/Co
###Current-Induced Magnetization Reversal in High Magnetic Fields in Co/Cu/Co Nanopillars|B. Oezyilmaz,A. D. Kent,D. Monsma,J. Z. Sun,M. J. Rooks,R. H. Koch###
(522980, 522984)
 Current-induced magnetization dynamics in Co/Cu/Co trilayer nanopillars(100nm in diameter) has been studied experimentally for large applied fieldsperpendicular to the layers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Co
###Current-Induced Magnetization Reversal in High Magnetic Fields in Co/Cu/Co Nanopillars|B. Oezyilmaz,A. D. Kent,D. Monsma,J. Z. Sun,M. J. Rooks,R. H. Koch###
(523134, 523134)
 A micromagnetic model, that includes a spin-transfer torque, suggeststhat the current induces a complete reversal of the thin Co layer to alignmentantiparallel to the applied field-that is, to a state of maximum magneticenergy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Radiation-Induced Magnetoresistance Oscillations in a 2D Electron Gas|Adam C. Durst,Subir Sachdev,N. Read,S. M. Girvin###
(523365, 523365)
 At high intensity, we identifyadditional features, likely due to multi-photon processes, which have yet to beobserved experimentally.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[172.0, 2, 'D', 5],[158.0, 2, 'D', 4]

C
###DC-transport properties of ferromagnetic (Ga,Mn)As semiconductors|T. Jungwirth,Jairo Sinova,K. Y. Wang,K. W. Edmonds,R. P. Campion,B. L. Gallagher,C. T. Foxon,Qian Niu,A. H. MacDonald###
(523420, 523420)
D<missing VAR>C-transport properties of ferromagnetic (Ga,Mn)As semiconductors.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 1.5, '%', 1],[63.0, 8, '%', 1]

Ga
###DC-transport properties of ferromagnetic (Ga,Mn)As semiconductors|T. Jungwirth,Jairo Sinova,K. Y. Wang,K. W. Edmonds,R. P. Campion,B. L. Gallagher,C. T. Foxon,Qian Niu,A. H. MacDonald###
(523431, 523431)
D<missing VAR>C-transport properties of ferromagnetic (Ga,Mn)As semiconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 1.5, '%', 1],[52.0, 8, '%', 1]

Mn
###DC-transport properties of ferromagnetic (Ga,Mn)As semiconductors|T. Jungwirth,Jairo Sinova,K. Y. Wang,K. W. Edmonds,R. P. Campion,B. L. Gallagher,C. T. Foxon,Qian Niu,A. H. MacDonald###
(523433, 523433)
D<missing VAR>C-transport properties of ferromagnetic (Ga,Mn)As semiconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 1.5, '%', 1],[50.0, 8, '%', 1]

As
###DC-transport properties of ferromagnetic (Ga,Mn)As semiconductors|T. Jungwirth,Jairo Sinova,K. Y. Wang,K. W. Edmonds,R. P. Campion,B. L. Gallagher,C. T. Foxon,Qian Niu,A. H. MacDonald###
(523435, 523435)
D<missing VAR>C-transport properties of ferromagnetic (Ga,Mn)As semiconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 1.5, '%', 1],[48.0, 8, '%', 1]

Ga
###DC-transport properties of ferromagnetic (Ga,Mn)As semiconductors|T. Jungwirth,Jairo Sinova,K. Y. Wang,K. W. Edmonds,R. P. Campion,B. L. Gallagher,C. T. Foxon,Qian Niu,A. H. MacDonald###
(523455, 523455)
 We study the dc transport properties of (Ga,Mn)As diluted magneticsemiconductors with Mn concentration varying from 1.5% to 8%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 1.5, '%', 0],[28.0, 8, '%', 0]

Mn
###DC-transport properties of ferromagnetic (Ga,Mn)As semiconductors|T. Jungwirth,Jairo Sinova,K. Y. Wang,K. W. Edmonds,R. P. Campion,B. L. Gallagher,C. T. Foxon,Qian Niu,A. H. MacDonald###
(523457, 523457)
 We study the dc transport properties of (Ga,Mn)As diluted magneticsemiconductors with Mn concentration varying from 1.5% to 8%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 1.5, '%', 0],[26.0, 8, '%', 0]

As
###DC-transport properties of ferromagnetic (Ga,Mn)As semiconductors|T. Jungwirth,Jairo Sinova,K. Y. Wang,K. W. Edmonds,R. P. Campion,B. L. Gallagher,C. T. Foxon,Qian Niu,A. H. MacDonald###
(523459, 523459)
 We study the dc transport properties of (Ga,Mn)As diluted magneticsemiconductors with Mn concentration varying from 1.5% to 8%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 1.5, '%', 0],[24.0, 8, '%', 0]

Mn
###DC-transport properties of ferromagnetic (Ga,Mn)As semiconductors|T. Jungwirth,Jairo Sinova,K. Y. Wang,K. W. Edmonds,R. P. Campion,B. L. Gallagher,C. T. Foxon,Qian Niu,A. H. MacDonald###
(523470, 523470)
 We study the dc transport properties of (Ga,Mn)As diluted magneticsemiconductors with Mn concentration varying from 1.5% to 8%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 1.5, '%', 0],[13.0, 8, '%', 0]

Mn
###DC-transport properties of ferromagnetic (Ga,Mn)As semiconductors|T. Jungwirth,Jairo Sinova,K. Y. Wang,K. W. Edmonds,R. P. Campion,B. L. Gallagher,C. T. Foxon,Qian Niu,A. H. MacDonald###
(523582, 523582)
 Transport data obtained at lowtemperatures are discussed theoretically within a model of band-holequasiparticles with a finite spectral width due to elastic scattering from Mnand compensating defects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 1.5, '%', 2],[99.0, 8, '%', 2]

Ga
###DC-transport properties of ferromagnetic (Ga,Mn)As semiconductors|T. Jungwirth,Jairo Sinova,K. Y. Wang,K. W. Edmonds,R. P. Campion,B. L. Gallagher,C. T. Foxon,Qian Niu,A. H. MacDonald###
(523649, 523649)
 This quantitative understanding of dc magneto-transport effects in(Ga,Mn)As is unparalleled in itinerant ferromagnetic systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[171.0, 1.5, '%', 4],[166.0, 8, '%', 4]

Mn
###DC-transport properties of ferromagnetic (Ga,Mn)As semiconductors|T. Jungwirth,Jairo Sinova,K. Y. Wang,K. W. Edmonds,R. P. Campion,B. L. Gallagher,C. T. Foxon,Qian Niu,A. H. MacDonald###
(523651, 523651)
 This quantitative understanding of dc magneto-transport effects in(Ga,Mn)As is unparalleled in itinerant ferromagnetic systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 1.5, '%', 4],[168.0, 8, '%', 4]

As
###DC-transport properties of ferromagnetic (Ga,Mn)As semiconductors|T. Jungwirth,Jairo Sinova,K. Y. Wang,K. W. Edmonds,R. P. Campion,B. L. Gallagher,C. T. Foxon,Qian Niu,A. H. MacDonald###
(523653, 523653)
 This quantitative understanding of dc magneto-transport effects in(Ga,Mn)As is unparalleled in itinerant ferromagnetic systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 1.5, '%', 4],[170.0, 8, '%', 4]

Gd
###Crossover from 2D to 3D magnetic disorder in sub-mono-atomic ferromagnetic layers|A. frydman,R. C. Dynes###
(523984, 523984)
 We present transport and magnetoresistance (MR) measurements performed onquench condensed ultrathin films of Gd evaporated on an amorphous Ge or Sblayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 2, 'D', 1],[51.0, 3, 'D', 1],[124.0, 2, 'D', 3],[146.0, 3, 'D', 3]

Ge
###Crossover from 2D to 3D magnetic disorder in sub-mono-atomic ferromagnetic layers|A. frydman,R. C. Dynes###
(523994, 523994)
 We present transport and magnetoresistance (MR) measurements performed onquench condensed ultrathin films of Gd evaporated on an amorphous Ge or Sblayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 2, 'D', 1],[61.0, 3, 'D', 1],[114.0, 2, 'D', 3],[136.0, 3, 'D', 3]

Sb
###Crossover from 2D to 3D magnetic disorder in sub-mono-atomic ferromagnetic layers|A. frydman,R. C. Dynes###
(523998, 523998)
 We present transport and magnetoresistance (MR) measurements performed onquench condensed ultrathin films of Gd evaporated on an amorphous Ge or Sblayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 2, 'D', 1],[65.0, 3, 'D', 1],[110.0, 2, 'D', 3],[132.0, 3, 'D', 3]

Ge
###Crossover from 2D to 3D magnetic disorder in sub-mono-atomic ferromagnetic layers|A. frydman,R. C. Dynes###
(524051, 524051)
 When the film is coated by an overlayer of Ge or Sb themagnitude of the MR increases and the hysteretic structure disappears.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 2, 'D', 3],[118.0, 3, 'D', 3],[57.0, 2, 'D', 1],[79.0, 3, 'D', 1]

Sb
###Crossover from 2D to 3D magnetic disorder in sub-mono-atomic ferromagnetic layers|A. frydman,R. C. Dynes###
(524055, 524055)
 When the film is coated by an overlayer of Ge or Sb themagnitude of the MR increases and the hysteretic structure disappears.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 2, 'D', 3],[122.0, 3, 'D', 3],[53.0, 2, 'D', 1],[75.0, 3, 'D', 1]

Gd
###Crossover from 2D to 3D magnetic disorder in sub-mono-atomic ferromagnetic layers|A. frydman,R. C. Dynes###
(524125, 524125)
 Wespeculate that the findings are a result of a crossover from a 2D magneticdisorder in the uncoated layers of Gd to a 3D magnetic disorder as the Gd filmis coated by a semiconducting layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[195.0, 2, 'D', 4],[192.0, 3, 'D', 4],[17.0, 2, 'D', 0],[5.0, 3, 'D', 0]

Gd
###Crossover from 2D to 3D magnetic disorder in sub-mono-atomic ferromagnetic layers|A. frydman,R. C. Dynes###
(524140, 524140)
 Wespeculate that the findings are a result of a crossover from a 2D magneticdisorder in the uncoated layers of Gd to a 3D magnetic disorder as the Gd filmis coated by a semiconducting layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[210.0, 2, 'D', 4],[207.0, 3, 'D', 4],[32.0, 2, 'D', 0],[10.0, 3, 'D', 0]

Co
###Co-ordination between Rashba spin-orbital interaction and space charge effect and enhanced spin injection into semiconductors|Wei Wu,Jinbin Li,Yue Yu,S. T. Chui###
(524166, 524166)
Co-ordination between Rashba spin-orbital interaction and space charge effect and enhanced spin injection into semiconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Co-ordination between Rashba spin-orbital interaction and space charge effect and enhanced spin injection into semiconductors|Wei Wu,Jinbin Li,Yue Yu,S. T. Chui###
(524284, 524284)
 In diffusion region, if the theresistance of the tunneling barriers is comparable to the semiconductorresistance, the magnetoresistance of this junction can be greatly enhancedunder appropriate doping by the co-ordination between the Rashba effect andscreened Coulomb interaction in the nonequilibrium transport processes withinHartree approximation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin-Voltaic Effect and its Implications|Igor Zutic,Jaroslav Fabian###
(524411, 524411)
 In an inhomogeneously doped magnetic semiconductor, an interplay between anequilibrium magnetization and injected nonequilibrium spin leads to thespin-voltaic effect--a spin analogue of the photo-voltaic effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr
###Competing Orders and Disorder-induced Insulator to Metal Transition in Manganites|Yukitoshi Motome,Nobuo Furukawa,Naoto Nagaosa###
(524858, 524858)
 Above theferromagnetic transition temperature, on the contrary, the disorder makes thesystem more insulating, which might cause an enhanced colossalmagnetoresistance as observed in the half-doped or Cr-substituted manganites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

No
###Competing Orders and Disorder-induced Insulator to Metal Transition in Manganites|Yukitoshi Motome,Nobuo Furukawa,Naoto Nagaosa###
(524866, 524866)
No indication of the percolation or the cluster formation is found, and thereremain the charge/lattice fluctuations instead which are enhanced toward thetransition temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0
Abstract does not contain any numbers.

GdBaCo2O5.5
###Ising-like Spin Anisotropy and Competing Antiferromagnetic - Ferromagnetic Orders in GdBaCo_{2}O_{5.5} Single Crystals|A. A. Taskin,A. N. Lavrov,Yoichi Ando###
(524952, 524957)
Ising-like Spin Anisotropy and Competing Antiferromagnetic - Ferromagnetic Orders in GdBaCo2O5.5 Single Crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5789473684210527,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.21052631578947367,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.10526315789473684,0,0,0,0,0,0,0,0.10526315789473684,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Ising-like Spin Anisotropy and Competing Antiferromagnetic - Ferromagnetic Orders in GdBaCo_{2}O_{5.5} Single Crystals|A. A. Taskin,A. N. Lavrov,Yoichi Ando###
(524964, 524964)
 In R<missing VAR>BaCo2O5x<missing VAR> compounds (R<missing VAR> is rare earth), aferromagnetic-antiferromagnetic competition is accompanied by a giantmagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BaCo2O5
###Ising-like Spin Anisotropy and Competing Antiferromagnetic - Ferromagnetic Orders in GdBaCo_{2}O_{5.5} Single Crystals|A. A. Taskin,A. N. Lavrov,Yoichi Ando###
(524967, 524971)
 In R<missing VAR>BaCo2O5x<missing VAR> compounds (R<missing VAR> is rare earth), aferromagnetic-antiferromagnetic competition is accompanied by a giantmagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0.625,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GdBaCo2O5.5
###Ising-like Spin Anisotropy and Competing Antiferromagnetic - Ferromagnetic Orders in GdBaCo_{2}O_{5.5} Single Crystals|A. A. Taskin,A. N. Lavrov,Yoichi Ando###
(525022, 525027)
 We study the magnetization of detwinned GdBaCo2O5.5single crystals, and find a remarkable uniaxial anisotropy of Co3 spinswhich is tightly linked with the chain oxygen ordering in GdO0.5 planes.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5789473684210527,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.21052631578947367,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.10526315789473684,0,0,0,0,0,0,0,0.10526315789473684,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co3
###Ising-like Spin Anisotropy and Competing Antiferromagnetic - Ferromagnetic Orders in GdBaCo_{2}O_{5.5} Single Crystals|A. A. Taskin,A. N. Lavrov,Yoichi Ando###
(525049, 525050)
 We study the magnetization of detwinned GdBaCo2O5.5single crystals, and find a remarkable uniaxial anisotropy of Co3 spinswhich is tightly linked with the chain oxygen ordering in GdO0.5 planes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GdO0.5
###Ising-like Spin Anisotropy and Competing Antiferromagnetic - Ferromagnetic Orders in GdBaCo_{2}O_{5.5} Single Crystals|A. A. Taskin,A. N. Lavrov,Yoichi Ando###
(525075, 525077)
 We study the magnetization of detwinned GdBaCo2O5.5single crystals, and find a remarkable uniaxial anisotropy of Co3 spinswhich is tightly linked with the chain oxygen ordering in GdO0.5 planes.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoO2
###Ising-like Spin Anisotropy and Competing Antiferromagnetic - Ferromagnetic Orders in GdBaCo_{2}O_{5.5} Single Crystals|A. A. Taskin,A. N. Lavrov,Yoichi Ando###
(525094, 525096)
Reflecting the underlying oxygen order, CoO2 planes also develop a spin-stateorder consisting of Co3 ions in alternating rows of S1 and S0 states.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co3
###Ising-like Spin Anisotropy and Competing Antiferromagnetic - Ferromagnetic Orders in GdBaCo_{2}O_{5.5} Single Crystals|A. A. Taskin,A. N. Lavrov,Yoichi Ando###
(525117, 525118)
Reflecting the underlying oxygen order, CoO2 planes also develop a spin-stateorder consisting of Co3 ions in alternating rows of S1 and S0 states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S1
###Ising-like Spin Anisotropy and Competing Antiferromagnetic - Ferromagnetic Orders in GdBaCo_{2}O_{5.5} Single Crystals|A. A. Taskin,A. N. Lavrov,Yoichi Ando###
(525130, 525131)
Reflecting the underlying oxygen order, CoO2 planes also develop a spin-stateorder consisting of Co3 ions in alternating rows of S1 and S0 states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S0
###Ising-like Spin Anisotropy and Competing Antiferromagnetic - Ferromagnetic Orders in GdBaCo_{2}O_{5.5} Single Crystals|A. A. Taskin,A. N. Lavrov,Yoichi Ando###
(525135, 525136)
Reflecting the underlying oxygen order, CoO2 planes also develop a spin-stateorder consisting of Co3 ions in alternating rows of S1 and S0 states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaSb2
###High Magnetic Field Sensor Using LaSb2|D. P. Young,R. G. Goodrich,J. F. DiTusa,S. Guo,J. Chan,D. Hall,P. W. Adams###
(525942, 525944)
High Magnetic Field Sensor Using LaSb2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 45, 'T', 1],[70.0, 10, 'K', 2],[115.0, 0, 'and', 2],[116.0, 45, 'T', 2],[134.0, 50, 'mK', 2],[168.0, 3, 'x', 3]

LaSb2
###High Magnetic Field Sensor Using LaSb2|D. P. Young,R. G. Goodrich,J. F. DiTusa,S. Guo,J. Chan,D. Hall,P. W. Adams###
(525972, 525974)
 The magnetotransport properties of single crystals of the highly anisotropiclayered metal LaSb2 are reported in magnetic fields up to 45 T with fieldsoriented both parallel and perpendicular to the layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 45, 'T', 0],[40.0, 10, 'K', 1],[85.0, 0, 'and', 1],[86.0, 45, 'T', 1],[104.0, 50, 'mK', 1],[138.0, 3, 'x', 2]

LaSb2
###High Magnetic Field Sensor Using LaSb2|D. P. Young,R. G. Goodrich,J. F. DiTusa,S. Guo,J. Chan,D. Hall,P. W. Adams###
(526025, 526027)
 Below 10 K theperpendicular magnetoresistance of LaSb2 becomes temperature independent andis characterized by a 100-fold linear increase in resistance between 0 and 45 Twith no evidence of quantum oscillations down to 50 mK.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 45, 'T', 1],[11.0, 10, 'K', 0],[32.0, 0, 'and', 0],[33.0, 45, 'T', 0],[51.0, 50, 'mK', 0],[85.0, 3, 'x', 1]

LaSb2
###High Magnetic Field Sensor Using LaSb2|D. P. Young,R. G. Goodrich,J. F. DiTusa,S. Guo,J. Chan,D. Hall,P. W. Adams###
(526130, 526132)
 Thefeasibility of using LaSb2 for magnetic field sensors is discussed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 45, 'T', 3],[116.0, 10, 'K', 2],[71.0, 0, 'and', 2],[70.0, 45, 'T', 2],[52.0, 50, 'mK', 2],[18.0, 3, 'x', 1]

La2-xSr
###Anisotropic Magnetoresistance in Lightly Doped La_{2-x}Sr_{x}CuO_{4}: Impact of Anti-Phase Domain Boundaries on the Electron Transport|Yoichi Ando,A. N. Lavrov,Seiki Komiya###
(526165, 526169)
Anisotropic Magnetoresistance in Lightly Doped La2-xSrx<missing VAR>CuO4 Impact of Anti-Phase Domain Boundaries on the Electron Transport.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

CuO4
###Anisotropic Magnetoresistance in Lightly Doped La_{2-x}Sr_{x}CuO_{4}: Impact of Anti-Phase Domain Boundaries on the Electron Transport|Yoichi Ando,A. N. Lavrov,Seiki Komiya###
(526171, 526173)
Anisotropic Magnetoresistance in Lightly Doped La2-xSrx<missing VAR>CuO4 Impact of Anti-Phase Domain Boundaries on the Electron Transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La1.99Sr0.01CuO4
###Anisotropic Magnetoresistance in Lightly Doped La_{2-x}Sr_{x}CuO_{4}: Impact of Anti-Phase Domain Boundaries on the Electron Transport|Yoichi Ando,A. N. Lavrov,Seiki Komiya###
(526224, 526230)
 Detailed behavior of the magnetoresistance (MR) is studied in lightly dopedantiferromagnetic La1.99Sr0.01CuO4, where, thanks to the weakferromagnetic moment due to spin canting, the antiferromagnetic (AF) domainstructure can be manipulated by the magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0.0014285714285714286,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2842857142857143,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Anisotropic Magnetoresistance in Lightly Doped La_{2-x}Sr_{x}CuO_{4}: Impact of Anti-Phase Domain Boundaries on the Electron Transport|Yoichi Ando,A. N. Lavrov,Seiki Komiya###
(526264, 526264)
 Detailed behavior of the magnetoresistance (MR) is studied in lightly dopedantiferromagnetic La1.99Sr0.01CuO4, where, thanks to the weakferromagnetic moment due to spin canting, the antiferromagnetic (AF) domainstructure can be manipulated by the magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CuO2
###Anisotropic Magnetoresistance in Lightly Doped La_{2-x}Sr_{x}CuO_{4}: Impact of Anti-Phase Domain Boundaries on the Electron Transport|Yoichi Ando,A. N. Lavrov,Seiki Komiya###
(526299, 526301)
 The MR behaviordemonstrates that CuO2 planes indeed contain anti-phase AF domain boundariesin which charges are confined, forming anti-phase stripes.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Anisotropic Magnetoresistance in Lightly Doped La_{2-x}Sr_{x}CuO_{4}: Impact of Anti-Phase Domain Boundaries on the Electron Transport|Yoichi Ando,A. N. Lavrov,Seiki Komiya###
(526314, 526314)
 The MR behaviordemonstrates that CuO2 planes indeed contain anti-phase AF domain boundariesin which charges are confined, forming anti-phase stripes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La1-xSr
###Inhomogeneous Ferromagnetism and Unconventional Charge Dynamics in Disordered Double Exchange Magnets|Sanjeev Kumar,Pinaki Majumdar###
(526648, 526652)
 We present exact results on theconductivity, magnetoresistance, optical response and real space structure ofthe inhomogeneous ferromagnetic state, and compare our results with chargedynamics in disordered La1-xSrx<missing VAR>MnO3.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

MnO3
###Inhomogeneous Ferromagnetism and Unconventional Charge Dynamics in Disordered Double Exchange Magnets|Sanjeev Kumar,Pinaki Majumdar###
(526654, 526656)
 We present exact results on theconductivity, magnetoresistance, optical response and real space structure ofthe inhomogeneous ferromagnetic state, and compare our results with chargedynamics in disordered La1-xSrx<missing VAR>MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Inhomogeneous Ferromagnetism and Unconventional Charge Dynamics in Disordered Double Exchange Magnets|Sanjeev Kumar,Pinaki Majumdar###
(526668, 526668)
 The large sizes, cal O (103),accessible within our method allows a complete, controlled calculation on thedisordered strongly interacting problem.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PH3
###Weak Localization in an Ultradense 2D Electron Gas in $δ$-doped Silicon|M. A. Zudov,C. L. Yang,R. R. Du,T. -C. Shen,J. -Y. Ji,J. S. Kline,J. R. Tucker###
(526760, 526762)
 An ultradense 2D electron system can be realized by adsorbing PH3precursor molecules onto an atomically clean Si surface, followed by epitaxialSi overgrowth.
Featurization terminated normally.
0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 2, 'D', 1],[16.0, 2, 'D', 0],[69.0, -2, ',', 1]

Si
###Weak Localization in an Ultradense 2D Electron Gas in $δ$-doped Silicon|M. A. Zudov,C. L. Yang,R. R. Du,T. -C. Shen,J. -Y. Ji,J. S. Kline,J. R. Tucker###
(526777, 526777)
 An ultradense 2D electron system can be realized by adsorbing PH3precursor molecules onto an atomically clean Si surface, followed by epitaxialSi overgrowth.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 2, 'D', 1],[33.0, 2, 'D', 0],[54.0, -2, ',', 1]

Si
###Weak Localization in an Ultradense 2D Electron Gas in $δ$-doped Silicon|M. A. Zudov,C. L. Yang,R. R. Du,T. -C. Shen,J. -Y. Ji,J. S. Kline,J. R. Tucker###
(526789, 526789)
 An ultradense 2D electron system can be realized by adsorbing PH3precursor molecules onto an atomically clean Si surface, followed by epitaxialSi overgrowth.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 2, 'D', 1],[45.0, 2, 'D', 0],[42.0, -2, ',', 1]

PH3
###Weak Localization in an Ultradense 2D Electron Gas in $δ$-doped Silicon|M. A. Zudov,C. L. Yang,R. R. Du,T. -C. Shen,J. -Y. Ji,J. S. Kline,J. R. Tucker###
(526800, 526802)
 By controlling the PH3 coverage the carrier density of suchsystem can easily reach sim 1014 cm-2, exceeding that typicallyfound in GaAs/AlGaAs structures by more than two-three orders of magnitude.
Featurization terminated normally.
0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 2, 'D', 2],[56.0, 2, 'D', 1],[29.0, -2, ',', 0]

GaAs/AlGaAs
###Weak Localization in an Ultradense 2D Electron Gas in $δ$-doped Silicon|M. A. Zudov,C. L. Yang,R. R. Du,T. -C. Shen,J. -Y. Ji,J. S. Kline,J. R. Tucker###
(526846, 526851)
 By controlling the PH3 coverage the carrier density of suchsystem can easily reach sim 1014 cm-2, exceeding that typicallyfound in GaAs/AlGaAs structures by more than two-three orders of magnitude.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[119.0, 2, 'D', 2],[102.0, 2, 'D', 1],[15.0, -2, ',', 0]

LaSr2Mn2O7
###Variable-range-hopping conductivity of half-doped bilayer manganite LaSr$_{2}$Mn$_{2}$O$_{7}$|X. J. Chen,C. L. Zhang,J. S. Gardner,J. L. Sarrao,C. C. Almasan###
(526996, 527002)
Variable-range-hopping conductivity of half-doped bilayer manganite LaSr2Mn2O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 220, 'to', 2],[72.0, 300, 'K', 2]

LaSr2Mn2O7
###Variable-range-hopping conductivity of half-doped bilayer manganite LaSr$_{2}$Mn$_{2}$O$_{7}$|X. J. Chen,C. L. Zhang,J. S. Gardner,J. L. Sarrao,C. C. Almasan###
(527055, 527061)
 We report measurements of in-plane rhoab and out-of-plane rhoc<missing VAR>resistivities on a single crystal of the half-doped bilayer manganiteLaSr2Mn2O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 220, 'to', 1],[13.0, 300, 'K', 1]

In
###Variable-range-hopping conductivity of half-doped bilayer manganite LaSr$_{2}$Mn$_{2}$O$_{7}$|X. J. Chen,C. L. Zhang,J. S. Gardner,J. L. Sarrao,C. C. Almasan###
(527064, 527064)
 In the temperature T<missing VAR> range 220 to 300 K, theresistive anisotropy rhoc<missing VAR>/rhoabAB/T<missing VAR> (A and B constants), whichprovides evidence for the variable-range-hopping conduction in the presence ofa Coulomb gap.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 220, 'to', 0],[10.0, 300, 'K', 0]

B
###Variable-range-hopping conductivity of half-doped bilayer manganite LaSr$_{2}$Mn$_{2}$O$_{7}$|X. J. Chen,C. L. Zhang,J. S. Gardner,J. L. Sarrao,C. C. Almasan###
(527090, 527090)
 In the temperature T<missing VAR> range 220 to 300 K, theresistive anisotropy rhoc<missing VAR>/rhoabAB/T<missing VAR> (A and B constants), whichprovides evidence for the variable-range-hopping conduction in the presence ofa Coulomb gap.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 220, 'to', 0],[16.0, 300, 'K', 0]

B
###Variable-range-hopping conductivity of half-doped bilayer manganite LaSr$_{2}$Mn$_{2}$O$_{7}$|X. J. Chen,C. L. Zhang,J. S. Gardner,J. L. Sarrao,C. C. Almasan###
(527099, 527099)
 In the temperature T<missing VAR> range 220 to 300 K, theresistive anisotropy rhoc<missing VAR>/rhoabAB/T<missing VAR> (A and B constants), whichprovides evidence for the variable-range-hopping conduction in the presence ofa Coulomb gap.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 220, 'to', 0],[25.0, 300, 'K', 0]

H
###Variable-range-hopping conductivity of half-doped bilayer manganite LaSr$_{2}$Mn$_{2}$O$_{7}$|X. J. Chen,C. L. Zhang,J. S. Gardner,J. L. Sarrao,C. C. Almasan###
(527161, 527161)
 This hopping mechanism also accounts for the quadratic magneticfield H and sin2phi dependences of the negative magnetoresistivityln [rhoi(T,H,phi)/rhoi(T,H0)] (i<missing VAR>ab,c), where phi is thein-plane angle between the magnetic field and the current.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 220, 'to', 1],[87.0, 300, 'K', 1]

H
###Variable-range-hopping conductivity of half-doped bilayer manganite LaSr$_{2}$Mn$_{2}$O$_{7}$|X. J. Chen,C. L. Zhang,J. S. Gardner,J. L. Sarrao,C. C. Almasan###
(527188, 527188)
 This hopping mechanism also accounts for the quadratic magneticfield H and sin2phi dependences of the negative magnetoresistivityln [rhoi(T,H,phi)/rhoi(T,H0)] (i<missing VAR>ab,c), where phi is thein-plane angle between the magnetic field and the current.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 220, 'to', 1],[114.0, 300, 'K', 1]

H0
###Variable-range-hopping conductivity of half-doped bilayer manganite LaSr$_{2}$Mn$_{2}$O$_{7}$|X. J. Chen,C. L. Zhang,J. S. Gardner,J. L. Sarrao,C. C. Almasan###
(527198, 527199)
 This hopping mechanism also accounts for the quadratic magneticfield H and sin2phi dependences of the negative magnetoresistivityln [rhoi(T,H,phi)/rhoi(T,H0)] (i<missing VAR>ab,c), where phi is thein-plane angle between the magnetic field and the current.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 220, 'to', 1],[124.0, 300, 'K', 1]

In
###In-plane Magnetic Field Dependent Magnetoresistance of Gated Asymmetric Double Quantum Wells|Yu. Krupko,L. Smrcka,P. Vasek,P. Svoboda,M. Cukr,L. Jansen###
(527249, 527249)
In-plane Magnetic Field Dependent Magnetoresistance of Gated Asymmetric Double Quantum Wells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Al0.3Ga0.7As
###In-plane Magnetic Field Dependent Magnetoresistance of Gated Asymmetric Double Quantum Wells|Yu. Krupko,L. Smrcka,P. Vasek,P. Svoboda,M. Cukr,L. Jansen###
(527315, 527319)
 The structures were prepared by inserting a thinAl0.3Ga0.7As barrier into the GaAs buffer layer of a standardmodulation-doped GaAs/Al0.3Ga0.7As heterostructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.35,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###In-plane Magnetic Field Dependent Magnetoresistance of Gated Asymmetric Double Quantum Wells|Yu. Krupko,L. Smrcka,P. Vasek,P. Svoboda,M. Cukr,L. Jansen###
(527327, 527328)
 The structures were prepared by inserting a thinAl0.3Ga0.7As barrier into the GaAs buffer layer of a standardmodulation-doped GaAs/Al0.3Ga0.7As heterostructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs/Al0.3Ga0.7As
###In-plane Magnetic Field Dependent Magnetoresistance of Gated Asymmetric Double Quantum Wells|Yu. Krupko,L. Smrcka,P. Vasek,P. Svoboda,M. Cukr,L. Jansen###
(527345, 527352)
 The structures were prepared by inserting a thinAl0.3Ga0.7As barrier into the GaAs buffer layer of a standardmodulation-doped GaAs/Al0.3Ga0.7As heterostructure.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

OSF
###Magnetoresistance of Si(001) MOSFETs with high concentration of electrons|L. Smrcka,O. N. Makarovsky,S. G. Schemenchinskii,P. Vasek,V. Jurka###
(527512, 527514)
Magnetoresistance of Si(001) M<missing VAR>OSFE<missing VAR>Ts with high concentration of electrons.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[183.0, 2, 'D', 4]

MnAs
###Point Contact Spin Spectroscopy of Ferromagnetic MnAs Epitaxial Films|R. Panguluri,G. Tsoi,B. Nadgorny,S. H. Chun,N. Samarth,I. I. Mazin###
(527738, 527739)
Point Contact Spin Spectroscopy of Ferromagnetic MnAs Epitaxial Films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 49, '%', 3],[152.0, 44, '%', 3]

MnAs
###Point Contact Spin Spectroscopy of Ferromagnetic MnAs Epitaxial Films|R. Panguluri,G. Tsoi,B. Nadgorny,S. H. Chun,N. Samarth,I. I. Mazin###
(527777, 527778)
 We use point contact Andreev reflection spin spectroscopy to measure thetransport spin polarization of MnAs epitaxial films grown on (001) GaAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 49, '%', 2],[113.0, 44, '%', 2]

GaAs
###Point Contact Spin Spectroscopy of Ferromagnetic MnAs Epitaxial Films|R. Panguluri,G. Tsoi,B. Nadgorny,S. H. Chun,N. Samarth,I. I. Mazin###
(527792, 527793)
 We use point contact Andreev reflection spin spectroscopy to measure thetransport spin polarization of MnAs epitaxial films grown on (001) GaAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 49, '%', 2],[98.0, 44, '%', 2]

B
###Point Contact Spin Spectroscopy of Ferromagnetic MnAs Epitaxial Films|R. Panguluri,G. Tsoi,B. Nadgorny,S. H. Chun,N. Samarth,I. I. Mazin###
(527911, 527911)
 A ballistic transport spin polarization of approximately 49% and 44% isobtained for the type A and type B orientations of MnAs, respectively.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 49, '%', 0],[20.0, 44, '%', 0]

MnAs
###Point Contact Spin Spectroscopy of Ferromagnetic MnAs Epitaxial Films|R. Panguluri,G. Tsoi,B. Nadgorny,S. H. Chun,N. Samarth,I. I. Mazin###
(527917, 527918)
 A ballistic transport spin polarization of approximately 49% and 44% isobtained for the type A and type B orientations of MnAs, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 49, '%', 0],[26.0, 44, '%', 0]

MnAs/AlAs
###Point Contact Spin Spectroscopy of Ferromagnetic MnAs Epitaxial Films|R. Panguluri,G. Tsoi,B. Nadgorny,S. H. Chun,N. Samarth,I. I. Mazin###
(527965, 527969)
 Thesemeasurements are consistent with our density functional calculations, and withrecent observations of a large tunnel magnetoresistance in MnAs/AlAs/(Ga,Mn)Astunnel junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[79.0, 49, '%', 1],[74.0, 44, '%', 1]

Ga
###Point Contact Spin Spectroscopy of Ferromagnetic MnAs Epitaxial Films|R. Panguluri,G. Tsoi,B. Nadgorny,S. H. Chun,N. Samarth,I. I. Mazin###
(527972, 527972)
 Thesemeasurements are consistent with our density functional calculations, and withrecent observations of a large tunnel magnetoresistance in MnAs/AlAs/(Ga,Mn)Astunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 49, '%', 1],[81.0, 44, '%', 1]

Mn
###Point Contact Spin Spectroscopy of Ferromagnetic MnAs Epitaxial Films|R. Panguluri,G. Tsoi,B. Nadgorny,S. H. Chun,N. Samarth,I. I. Mazin###
(527974, 527974)
 Thesemeasurements are consistent with our density functional calculations, and withrecent observations of a large tunnel magnetoresistance in MnAs/AlAs/(Ga,Mn)Astunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 49, '%', 1],[83.0, 44, '%', 1]

As
###Point Contact Spin Spectroscopy of Ferromagnetic MnAs Epitaxial Films|R. Panguluri,G. Tsoi,B. Nadgorny,S. H. Chun,N. Samarth,I. I. Mazin###
(527976, 527976)
 Thesemeasurements are consistent with our density functional calculations, and withrecent observations of a large tunnel magnetoresistance in MnAs/AlAs/(Ga,Mn)Astunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 49, '%', 1],[85.0, 44, '%', 1]

La0.5Sr0.5CoO3
###Anisotropic magnetoresistive and magnetic properties of La_{0.5}Sr_{0.5}CoO_{3-δ} film|B. I. Belevtsev,V. B. Krasovitsky,A. S. Panfilov,I. N. Chukanova###
(528004, 528010)
Anisotropic magnetoresistive and magnetic properties of La0.5Sr0.5CoO3- film.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.5Sr0.5CoO3
###Anisotropic magnetoresistive and magnetic properties of La_{0.5}Sr_{0.5}CoO_{3-δ} film|B. I. Belevtsev,V. B. Krasovitsky,A. S. Panfilov,I. N. Chukanova###
(528028, 528034)
 The magnetic and transport properties of La0.5Sr0.5CoO3-delta filmgrown on a LaAlO3 substrate by pulsed-laser deposition are studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaAlO3
###Anisotropic magnetoresistive and magnetic properties of La_{0.5}Sr_{0.5}CoO_{3-δ} film|B. I. Belevtsev,V. B. Krasovitsky,A. S. Panfilov,I. N. Chukanova###
(528047, 528050)
 The magnetic and transport properties of La0.5Sr0.5CoO3-delta filmgrown on a LaAlO3 substrate by pulsed-laser deposition are studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La1-xSr
###Spin states and phase separation in La_{1-x}Sr_{x}CoO_3 (x=0.15, 0.25, 0.35) films: optical, magneto-optical and magneto-transport studies|N. N. Loshkareva,E. A. Gan'shina,B. I. Belevtsev,Yu. P. Sukhorukov,E. V. Mostovshchikova,A. N. Vinogradov,V. B. Krasovitsky,I. N. Chukanova###
(528254, 528258)
Spin states and phase separation in La1-xSrx<missing VAR>CoO3 (x<missing VAR>0.15, 0.25, 0.35) films optical, magneto-optical and magneto-transport studies.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[8.0, 0.15, ',', 0],[11.0, 0.25, ',', 0],[71.0, 0.15, ',', 1],[74.0, 0.25, ',', 1]

CoO3
###Spin states and phase separation in La_{1-x}Sr_{x}CoO_3 (x=0.15, 0.25, 0.35) films: optical, magneto-optical and magneto-transport studies|N. N. Loshkareva,E. A. Gan'shina,B. I. Belevtsev,Yu. P. Sukhorukov,E. V. Mostovshchikova,A. N. Vinogradov,V. B. Krasovitsky,I. N. Chukanova###
(528260, 528262)
Spin states and phase separation in La1-xSrx<missing VAR>CoO3 (x<missing VAR>0.15, 0.25, 0.35) films optical, magneto-optical and magneto-transport studies.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 0.15, ',', 0],[7.0, 0.25, ',', 0],[67.0, 0.15, ',', 1],[70.0, 0.25, ',', 1]

La1-xSr
###Spin states and phase separation in La_{1-x}Sr_{x}CoO_3 (x=0.15, 0.25, 0.35) films: optical, magneto-optical and magneto-transport studies|N. N. Loshkareva,E. A. Gan'shina,B. I. Belevtsev,Yu. P. Sukhorukov,E. V. Mostovshchikova,A. N. Vinogradov,V. B. Krasovitsky,I. N. Chukanova###
(528317, 528321)
 Optical absorption and transverse Kerr effect spectra, resistivity andmagnetoresistance of La1-xSrx<missing VAR>CoO3 (x<missing VAR>0.15, 0.25, 0.35) filmshave been studied.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[51.0, 0.15, ',', 1],[48.0, 0.25, ',', 1],[8.0, 0.15, ',', 0],[11.0, 0.25, ',', 0]

CoO3
###Spin states and phase separation in La_{1-x}Sr_{x}CoO_3 (x=0.15, 0.25, 0.35) films: optical, magneto-optical and magneto-transport studies|N. N. Loshkareva,E. A. Gan'shina,B. I. Belevtsev,Yu. P. Sukhorukov,E. V. Mostovshchikova,A. N. Vinogradov,V. B. Krasovitsky,I. N. Chukanova###
(528323, 528325)
 Optical absorption and transverse Kerr effect spectra, resistivity andmagnetoresistance of La1-xSrx<missing VAR>CoO3 (x<missing VAR>0.15, 0.25, 0.35) filmshave been studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 0.15, ',', 1],[54.0, 0.25, ',', 1],[4.0, 0.15, ',', 0],[7.0, 0.25, ',', 0]

Co3
###Spin states and phase separation in La_{1-x}Sr_{x}CoO_3 (x=0.15, 0.25, 0.35) films: optical, magneto-optical and magneto-transport studies|N. N. Loshkareva,E. A. Gan'shina,B. I. Belevtsev,Yu. P. Sukhorukov,E. V. Mostovshchikova,A. N. Vinogradov,V. B. Krasovitsky,I. N. Chukanova###
(528399, 528400)
 The temperature dependencies of the optical andmagneto-optical properties of the films exhibit features, which can beattributed to the transition of the Co3 ions from the low-spin state(S0) to the intermediate-spin state (S1) and to orbital ordering of theCo3 ions in the latter state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 0.15, ',', 2],[130.0, 0.25, ',', 2],[70.0, 0.15, ',', 1],[67.0, 0.25, ',', 1]

(S0)
###Spin states and phase separation in La_{1-x}Sr_{x}CoO_3 (x=0.15, 0.25, 0.35) films: optical, magneto-optical and magneto-transport studies|N. N. Loshkareva,E. A. Gan'shina,B. I. Belevtsev,Yu. P. Sukhorukov,E. V. Mostovshchikova,A. N. Vinogradov,V. B. Krasovitsky,I. N. Chukanova###
(528415, 528418)
 The temperature dependencies of the optical andmagneto-optical properties of the films exhibit features, which can beattributed to the transition of the Co3 ions from the low-spin state(S0) to the intermediate-spin state (S1) and to orbital ordering of theCo3 ions in the latter state.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 0.15, ',', 2],[146.0, 0.25, ',', 2],[86.0, 0.15, ',', 1],[83.0, 0.25, ',', 1]

(S1)
###Spin states and phase separation in La_{1-x}Sr_{x}CoO_3 (x=0.15, 0.25, 0.35) films: optical, magneto-optical and magneto-transport studies|N. N. Loshkareva,E. A. Gan'shina,B. I. Belevtsev,Yu. P. Sukhorukov,E. V. Mostovshchikova,A. N. Vinogradov,V. B. Krasovitsky,I. N. Chukanova###
(528430, 528433)
 The temperature dependencies of the optical andmagneto-optical properties of the films exhibit features, which can beattributed to the transition of the Co3 ions from the low-spin state(S0) to the intermediate-spin state (S1) and to orbital ordering of theCo3 ions in the latter state.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 0.15, ',', 2],[161.0, 0.25, ',', 2],[101.0, 0.15, ',', 1],[98.0, 0.25, ',', 1]

Co3
###Spin states and phase separation in La_{1-x}Sr_{x}CoO_3 (x=0.15, 0.25, 0.35) films: optical, magneto-optical and magneto-transport studies|N. N. Loshkareva,E. A. Gan'shina,B. I. Belevtsev,Yu. P. Sukhorukov,E. V. Mostovshchikova,A. N. Vinogradov,V. B. Krasovitsky,I. N. Chukanova###
(528448, 528449)
 The temperature dependencies of the optical andmagneto-optical properties of the films exhibit features, which can beattributed to the transition of the Co3 ions from the low-spin state(S0) to the intermediate-spin state (S1) and to orbital ordering of theCo3 ions in the latter state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[182.0, 0.15, ',', 2],[179.0, 0.25, ',', 2],[119.0, 0.15, ',', 1],[116.0, 0.25, ',', 1]

Sr
###Spin states and phase separation in La_{1-x}Sr_{x}CoO_3 (x=0.15, 0.25, 0.35) films: optical, magneto-optical and magneto-transport studies|N. N. Loshkareva,E. A. Gan'shina,B. I. Belevtsev,Yu. P. Sukhorukov,E. V. Mostovshchikova,A. N. Vinogradov,V. B. Krasovitsky,I. N. Chukanova###
(528481, 528481)
 The evolution of the properties influencedby doping with Sr is interpreted on the basis of the phase separation model.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[215.0, 0.15, ',', 3],[212.0, 0.25, ',', 3],[152.0, 0.15, ',', 2],[149.0, 0.25, ',', 2]

La0.9Sr0.1MnO3
###Detecting percolative metal-insulator transition in manganites by resistive relaxation|X. J. Chen,H. -U. Habermeier,C. C. Almasan###
(528560, 528566)
 We report an experimental study of the time dependence of resistivity of aLa0.9Sr0.1MnO3 ultrathin film in order to elucidate theunderlying mechanism for metal-insulator transition and colossalmagnetoresistance CMR effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.02,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Detecting percolative metal-insulator transition in manganites by resistive relaxation|X. J. Chen,H. -U. Habermeier,C. C. Almasan###
(528602, 528602)
 We report an experimental study of the time dependence of resistivity of aLa0.9Sr0.1MnO3 ultrathin film in order to elucidate theunderlying mechanism for metal-insulator transition and colossalmagnetoresistance CMR effect.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Detecting percolative metal-insulator transition in manganites by resistive relaxation|X. J. Chen,H. -U. Habermeier,C. C. Almasan###
(528739, 528739)
 These relaxation processes indicate that themetal-insulator transition and the associated CMR are a direct result of phaseseparation and of percolation of the metallic phase.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si/SiGe
###Spin polarization and metallic behavior of a silicon two-dimensional electron system|Tohru Okamoto,Mitsuaki Ooya,Kunio Hosoya,Shinji Kawaji###
(528845, 528848)
 We have studied the magnetic and transport properties of anultra-low-resistivity two-dimensional electron system in a Si/SiGe quantumwell.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Si
###Spin polarization and metallic behavior of a silicon two-dimensional electron system|Tohru Okamoto,Mitsuaki Ooya,Kunio Hosoya,Shinji Kawaji###
(528904, 528904)
 The spin polarization increases linearly with the in-plane magnetic fieldand the enhancement of the spin susceptibility is consistent with that inSi-M<missing VAR>OS structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OS
###Spin polarization and metallic behavior of a silicon two-dimensional electron system|Tohru Okamoto,Mitsuaki Ooya,Kunio Hosoya,Shinji Kawaji###
(528907, 528908)
 The spin polarization increases linearly with the in-plane magnetic fieldand the enhancement of the spin susceptibility is consistent with that inSi-M<missing VAR>OS structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Mössbauer Effect Probe of Local Jahn-Teller distortion in Fe-doped Colossal Magnetoresistive Manganites|Zhao-hua Cheng,Zhi-hong Wang,Nai-li Di,Zhi-qi Kou,Guang-jun Wang,Rui-wei Li,Yi Lu,Qing-an Li,Bao-gen Shen,R. A. Dunlap###
(529025, 529025)
M<missing VAR>ssbauer Effect Probe of Local Jahn-Teller distortion in Fe-doped Colossal Magnetoresistive Manganites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Mössbauer Effect Probe of Local Jahn-Teller distortion in Fe-doped Colossal Magnetoresistive Manganites|Zhao-hua Cheng,Zhi-hong Wang,Nai-li Di,Zhi-qi Kou,Guang-jun Wang,Rui-wei Li,Yi Lu,Qing-an Li,Bao-gen Shen,R. A. Dunlap###
(529044, 529044)
 Local structure of the Fe-doped La1-xCax<missing VAR>MnO3 (x<missing VAR>0.00-1.00)compounds has been investigated by means of Mossbauer spectroscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La1-xCa
###Mössbauer Effect Probe of Local Jahn-Teller distortion in Fe-doped Colossal Magnetoresistive Manganites|Zhao-hua Cheng,Zhi-hong Wang,Nai-li Di,Zhi-qi Kou,Guang-jun Wang,Rui-wei Li,Yi Lu,Qing-an Li,Bao-gen Shen,R. A. Dunlap###
(529048, 529052)
 Local structure of the Fe-doped La1-xCax<missing VAR>MnO3 (x<missing VAR>0.00-1.00)compounds has been investigated by means of Mossbauer spectroscopy.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

MnO3
###Mössbauer Effect Probe of Local Jahn-Teller distortion in Fe-doped Colossal Magnetoresistive Manganites|Zhao-hua Cheng,Zhi-hong Wang,Nai-li Di,Zhi-qi Kou,Guang-jun Wang,Rui-wei Li,Yi Lu,Qing-an Li,Bao-gen Shen,R. A. Dunlap###
(529054, 529056)
 Local structure of the Fe-doped La1-xCax<missing VAR>MnO3 (x<missing VAR>0.00-1.00)compounds has been investigated by means of Mossbauer spectroscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Mössbauer Effect Probe of Local Jahn-Teller distortion in Fe-doped Colossal Magnetoresistive Manganites|Zhao-hua Cheng,Zhi-hong Wang,Nai-li Di,Zhi-qi Kou,Guang-jun Wang,Rui-wei Li,Yi Lu,Qing-an Li,Bao-gen Shen,R. A. Dunlap###
(529089, 529089)
57Fe Mossbauer spectra provide a direct evidence of Jahn-Tellerdistortion in these manganites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ca
###Mössbauer Effect Probe of Local Jahn-Teller distortion in Fe-doped Colossal Magnetoresistive Manganites|Zhao-hua Cheng,Zhi-hong Wang,Nai-li Di,Zhi-qi Kou,Guang-jun Wang,Rui-wei Li,Yi Lu,Qing-an Li,Bao-gen Shen,R. A. Dunlap###
(529158, 529158)
 It is noteworthy that Ca-concentrationdependence of Jahn-Teller coupling strength is very consistent with themagnetic phase diagram.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Mössbauer Effect Probe of Local Jahn-Teller distortion in Fe-doped Colossal Magnetoresistive Manganites|Zhao-hua Cheng,Zhi-hong Wang,Nai-li Di,Zhi-qi Kou,Guang-jun Wang,Rui-wei Li,Yi Lu,Qing-an Li,Bao-gen Shen,R. A. Dunlap###
(529248, 529248)
 Our results reveal that Mossbauer spectroscopy cannot only detect the local structural distortion, but also provide a techniqueto investigate Jahn-Teller coupling of Fe-doped La1-xCax<missing VAR>MnO3colossal magnetoresistive perovskites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La1-xCa
###Mössbauer Effect Probe of Local Jahn-Teller distortion in Fe-doped Colossal Magnetoresistive Manganites|Zhao-hua Cheng,Zhi-hong Wang,Nai-li Di,Zhi-qi Kou,Guang-jun Wang,Rui-wei Li,Yi Lu,Qing-an Li,Bao-gen Shen,R. A. Dunlap###
(529252, 529256)
 Our results reveal that Mossbauer spectroscopy cannot only detect the local structural distortion, but also provide a techniqueto investigate Jahn-Teller coupling of Fe-doped La1-xCax<missing VAR>MnO3colossal magnetoresistive perovskites.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

MnO3
###Mössbauer Effect Probe of Local Jahn-Teller distortion in Fe-doped Colossal Magnetoresistive Manganites|Zhao-hua Cheng,Zhi-hong Wang,Nai-li Di,Zhi-qi Kou,Guang-jun Wang,Rui-wei Li,Yi Lu,Qing-an Li,Bao-gen Shen,R. A. Dunlap###
(529258, 529260)
 Our results reveal that Mossbauer spectroscopy cannot only detect the local structural distortion, but also provide a techniqueto investigate Jahn-Teller coupling of Fe-doped La1-xCax<missing VAR>MnO3colossal magnetoresistive perovskites.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.7Ca0.3MnO3
###Physical properties of single-crystalline fibers of the colossal-magnetoresistance manganite La0.7Ca0.3MnO3|C. A. Cardoso,F. M. Araujo-Moreira,M. R. B. Andreeta,A. C. Hernandes,E. R. Leite,O. F. de Lima,A. W. Mombru,R. Faccio###
(529516, 529522)
Physical properties of single-crystalline fibers of the colossal-magnetoresistance manganite La0.7Ca0.3MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[224.0, 0.073, 'degrees', 5]

C
###Physical properties of single-crystalline fibers of the colossal-magnetoresistance manganite La0.7Ca0.3MnO3|C. A. Cardoso,F. M. Araujo-Moreira,M. R. B. Andreeta,A. C. Hernandes,E. R. Leite,O. F. de Lima,A. W. Mombru,R. Faccio###
(529549, 529549)
 We have grown high-quality single crystals of the colossal-magnetoresistance(CMR) material La0.7Ca0.3MnO3 by using the laser heated pedestal growth (L<missing VAR>HPG)method.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[197.0, 0.073, 'degrees', 4]

La0.7Ca0.3MnO3
###Physical properties of single-crystalline fibers of the colossal-magnetoresistance manganite La0.7Ca0.3MnO3|C. A. Cardoso,F. M. Araujo-Moreira,M. R. B. Andreeta,A. C. Hernandes,E. R. Leite,O. F. de Lima,A. W. Mombru,R. Faccio###
(529556, 529562)
 We have grown high-quality single crystals of the colossal-magnetoresistance(CMR) material La0.7Ca0.3MnO3 by using the laser heated pedestal growth (L<missing VAR>HPG)method.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[184.0, 0.073, 'degrees', 4]

HP
###Physical properties of single-crystalline fibers of the colossal-magnetoresistance manganite La0.7Ca0.3MnO3|C. A. Cardoso,F. M. Araujo-Moreira,M. R. B. Andreeta,A. C. Hernandes,E. R. Leite,O. F. de Lima,A. W. Mombru,R. Faccio###
(529580, 529581)
 We have grown high-quality single crystals of the colossal-magnetoresistance(CMR) material La0.7Ca0.3MnO3 by using the laser heated pedestal growth (L<missing VAR>HPG)method.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 0.073, 'degrees', 4]

BS
###Physical properties of single-crystalline fibers of the colossal-magnetoresistance manganite La0.7Ca0.3MnO3|C. A. Cardoso,F. M. Araujo-Moreira,M. R. B. Andreeta,A. C. Hernandes,E. R. Leite,O. F. de Lima,A. W. Mombru,R. Faccio###
(529704, 529705)
 The quality of thecrystalline fibers was confirmed by Laue and E<missing VAR>BSD<missing VAR> (Electron BackscatterDiffraction) patterns.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 0.073, 'degrees', 1]

C
###Physical properties of single-crystalline fibers of the colossal-magnetoresistance manganite La0.7Ca0.3MnO3|C. A. Cardoso,F. M. Araujo-Moreira,M. R. B. Andreeta,A. C. Hernandes,E. R. Leite,O. F. de Lima,A. W. Mombru,R. Faccio###
(529751, 529751)
 The CMR behavior was confirmed byelectrical resistivity and magnetization measurements as a function oftemperature.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 0.073, 'degrees', 1]

Bi2Sr2CaCu2O8
###'Giant' normal state magnetoresistances of Bi$_{2}$Sr$_{2}$CaCu$_{2}$O$_{8+δ}$|V. N. Zavaritsky,J. Vanacken,V. V. Moshchalkov,A. S. Alexandrov###
(529804, 529812)
Giant normal state magnetoresistances of Bi2Sr2CaCu2O8.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.06666666666666667,0,0,0,0,0,0,0,0,0.13333333333333333,0,0,0,0,0,0,0,0,0.13333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 50, 'T', 1]

Bi
###'Giant' normal state magnetoresistances of Bi$_{2}$Sr$_{2}$CaCu$_{2}$O$_{8+δ}$|V. N. Zavaritsky,J. Vanacken,V. V. Moshchalkov,A. S. Alexandrov###
(529824, 529824)
 Magnetoresistance (MR) of Bi-2212 single crystals with Tc approx 87-92K is studied in pulsed magnetic fields up to 50T along the c<missing VAR>-axis in a widetemperature range.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 50, 'T', 0]

K
###'Giant' normal state magnetoresistances of Bi$_{2}$Sr$_{2}$CaCu$_{2}$O$_{8+δ}$|V. N. Zavaritsky,J. Vanacken,V. V. Moshchalkov,A. S. Alexandrov###
(529844, 529844)
 Magnetoresistance (MR) of Bi-2212 single crystals with Tc approx 87-92K is studied in pulsed magnetic fields up to 50T along the c<missing VAR>-axis in a widetemperature range.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 50, 'T', 0]

H
###'Giant' normal state magnetoresistances of Bi$_{2}$Sr$_{2}$CaCu$_{2}$O$_{8+δ}$|V. N. Zavaritsky,J. Vanacken,V. V. Moshchalkov,A. S. Alexandrov###
(529991, 529991)
 Resistive uppercritical fields Hc<missing VAR>2(T) determined from the in-- and out-of-plane M<missing VAR>Rs areabout the same.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 50, 'T', 4]

BCS
###'Giant' normal state magnetoresistances of Bi$_{2}$Sr$_{2}$CaCu$_{2}$O$_{8+δ}$|V. N. Zavaritsky,J. Vanacken,V. V. Moshchalkov,A. S. Alexandrov###
(530035, 530037)
 They show non-BCS temperature dependences compatible with theBose-Einstein condensation field of preformed charged bosons.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[174.0, 50, 'T', 5]

P
###Magnetothermopower and Nernst effect in unconventional charge density waves|Balázs Dóra,Kazumi Maki,András Ványolos,Attila Virosztek###
(530128, 530128)
 Recently we have shown that the striking angular dependent magnetoresistancein the low temperature phase (LTP) of alpha-(BEDT-TTF)2KHg(SCN)4 isconsistently described in terms of unconventional charge density wave (UCD<missing VAR>W).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 65, ',', 5]

B
###Magnetothermopower and Nernst effect in unconventional charge density waves|Balázs Dóra,Kazumi Maki,András Ványolos,Attila Virosztek###
(530136, 530136)
 Recently we have shown that the striking angular dependent magnetoresistancein the low temperature phase (LTP) of alpha-(BEDT-TTF)2KHg(SCN)4 isconsistently described in terms of unconventional charge density wave (UCD<missing VAR>W).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 65, ',', 5]

F
###Magnetothermopower and Nernst effect in unconventional charge density waves|Balázs Dóra,Kazumi Maki,András Ványolos,Attila Virosztek###
(530143, 530143)
 Recently we have shown that the striking angular dependent magnetoresistancein the low temperature phase (LTP) of alpha-(BEDT-TTF)2KHg(SCN)4 isconsistently described in terms of unconventional charge density wave (UCD<missing VAR>W).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 65, ',', 5]

KHg(SCN)4
###Magnetothermopower and Nernst effect in unconventional charge density waves|Balázs Dóra,Kazumi Maki,András Ványolos,Attila Virosztek###
(530146, 530153)
 Recently we have shown that the striking angular dependent magnetoresistancein the low temperature phase (LTP) of alpha-(BEDT-TTF)2KHg(SCN)4 isconsistently described in terms of unconventional charge density wave (UCD<missing VAR>W).
Featurization terminated normally.
0,0,0,0,0,0.2857142857142857,0.2857142857142857,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0.07142857142857142,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07142857142857142,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 65, ',', 5]

UC
###Magnetothermopower and Nernst effect in unconventional charge density waves|Balázs Dóra,Kazumi Maki,András Ványolos,Attila Virosztek###
(530177, 530178)
 Recently we have shown that the striking angular dependent magnetoresistancein the low temperature phase (LTP) of alpha-(BEDT-TTF)2KHg(SCN)4 isconsistently described in terms of unconventional charge density wave (UCD<missing VAR>W).
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
[106.0, 65, ',', 5]

W
###Magnetothermopower and Nernst effect in unconventional charge density waves|Balázs Dóra,Kazumi Maki,András Ványolos,Attila Virosztek###
(530180, 530180)
 Recently we have shown that the striking angular dependent magnetoresistancein the low temperature phase (LTP) of alpha-(BEDT-TTF)2KHg(SCN)4 isconsistently described in terms of unconventional charge density wave (UCD<missing VAR>W).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 65, ',', 5]

U
###Magnetothermopower and Nernst effect in unconventional charge density waves|Balázs Dóra,Kazumi Maki,András Ványolos,Attila Virosztek###
(530210, 530210)
Here we investigate theoretically the thermoelectric power and the Nernsteffect in UD<missing VAR>W.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 65, ',', 4]

W
###Magnetothermopower and Nernst effect in unconventional charge density waves|Balázs Dóra,Kazumi Maki,András Ványolos,Attila Virosztek###
(530212, 530212)
Here we investigate theoretically the thermoelectric power and the Nernsteffect in UD<missing VAR>W.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 65, ',', 4]

B
###Magnetothermopower and Nernst effect in unconventional charge density waves|Balázs Dóra,Kazumi Maki,András Ványolos,Attila Virosztek###
(530243, 530243)
 The present results account consistently for the recent data ofmagnetothermopower in alpha-(BEDT-TTF)2KHg(SCN)4 obtained by Choi et al.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 65, ',', 3]

F
###Magnetothermopower and Nernst effect in unconventional charge density waves|Balázs Dóra,Kazumi Maki,András Ványolos,Attila Virosztek###
(530250, 530250)
 The present results account consistently for the recent data ofmagnetothermopower in alpha-(BEDT-TTF)2KHg(SCN)4 obtained by Choi et al.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 65, ',', 3]

KHg(SCN)4
###Magnetothermopower and Nernst effect in unconventional charge density waves|Balázs Dóra,Kazumi Maki,András Ványolos,Attila Virosztek###
(530253, 530260)
 The present results account consistently for the recent data ofmagnetothermopower in alpha-(BEDT-TTF)2KHg(SCN)4 obtained by Choi et al.
Featurization terminated normally.
0,0,0,0,0,0.2857142857142857,0.2857142857142857,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0.07142857142857142,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07142857142857142,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 65, ',', 3]

B
###Magnetothermopower and Nernst effect in unconventional charge density waves|Balázs Dóra,Kazumi Maki,András Ványolos,Attila Virosztek###
(530281, 530281)
 B, 65, 205119 (2002)).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 65, ',', 0]

P
###Magnetothermopower and Nernst effect in unconventional charge density waves|Balázs Dóra,Kazumi Maki,András Ványolos,Attila Virosztek###
(530310, 530310)
 This confirms further our identification ofLTP in this salt as UCD<missing VAR>W.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 65, ',', 1]

UC
###Magnetothermopower and Nernst effect in unconventional charge density waves|Balázs Dóra,Kazumi Maki,András Ványolos,Attila Virosztek###
(530320, 530321)
 This confirms further our identification ofLTP in this salt as UCD<missing VAR>W.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
[36.0, 65, ',', 1]

W
###Magnetothermopower and Nernst effect in unconventional charge density waves|Balázs Dóra,Kazumi Maki,András Ványolos,Attila Virosztek###
(530323, 530323)
 This confirms further our identification ofLTP in this salt as UCD<missing VAR>W.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 65, ',', 1]

U
###Magnetothermopower and Nernst effect in unconventional charge density waves|Balázs Dóra,Kazumi Maki,András Ványolos,Attila Virosztek###
(530351, 530351)
 We propose also that the Nernst effect provides aclear signature of UD<missing VAR>W.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 65, ',', 2]

W
###Magnetothermopower and Nernst effect in unconventional charge density waves|Balázs Dóra,Kazumi Maki,András Ványolos,Attila Virosztek###
(530353, 530353)
 We propose also that the Nernst effect provides aclear signature of UD<missing VAR>W.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 65, ',', 2]

F
###Field Dependence of the Interface Energy in Af/FM Bilayers|J. R. L. de Almeida,J. R. Steiner,S. M. Rezende###
(530380, 530380)
Field Dependence of the Interface Energy in Af/FM<missing VAR> Bilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Field Dependence of the Interface Energy in Af/FM Bilayers|J. R. L. de Almeida,J. R. Steiner,S. M. Rezende###
(530386, 530386)
 In the investigations of antiferromagnetic (AF)/ ferromagnetic (FM) bilayersamples, often distinct experimental techniques yield different values for themeasured exchange anisotropy field (HE).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Field Dependence of the Interface Energy in Af/FM Bilayers|J. R. L. de Almeida,J. R. Steiner,S. M. Rezende###
(530398, 530398)
 In the investigations of antiferromagnetic (AF)/ ferromagnetic (FM) bilayersamples, often distinct experimental techniques yield different values for themeasured exchange anisotropy field (HE).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Field Dependence of the Interface Energy in Af/FM Bilayers|J. R. L. de Almeida,J. R. Steiner,S. M. Rezende###
(530405, 530405)
 In the investigations of antiferromagnetic (AF)/ ferromagnetic (FM) bilayersamples, often distinct experimental techniques yield different values for themeasured exchange anisotropy field (HE).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Field Dependence of the Interface Energy in Af/FM Bilayers|J. R. L. de Almeida,J. R. Steiner,S. M. Rezende###
(530443, 530443)
 In the investigations of antiferromagnetic (AF)/ ferromagnetic (FM) bilayersamples, often distinct experimental techniques yield different values for themeasured exchange anisotropy field (HE).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F/F
###Field Dependence of the Interface Energy in Af/FM Bilayers|J. R. L. de Almeida,J. R. Steiner,S. M. Rezende###
(530466, 530468)
 Using a simple microscopic model forrepresenting the AF/FM<missing VAR> interface, which incorporates the effect of interfaceroughness, we propose that the observed discrepancy may be accounted for by thedependence of the interface energy between the AF and FM<missing VAR> layers with the valueof the external applied field (H) as recently observed in anisotropicmagnetoresistance measurements, lending support to our proposal.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

F
###Field Dependence of the Interface Energy in Af/FM Bilayers|J. R. L. de Almeida,J. R. Steiner,S. M. Rezende###
(530530, 530530)
 Using a simple microscopic model forrepresenting the AF/FM<missing VAR> interface, which incorporates the effect of interfaceroughness, we propose that the observed discrepancy may be accounted for by thedependence of the interface energy between the AF and FM<missing VAR> layers with the valueof the external applied field (H) as recently observed in anisotropicmagnetoresistance measurements, lending support to our proposal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Field Dependence of the Interface Energy in Af/FM Bilayers|J. R. L. de Almeida,J. R. Steiner,S. M. Rezende###
(530534, 530534)
 Using a simple microscopic model forrepresenting the AF/FM<missing VAR> interface, which incorporates the effect of interfaceroughness, we propose that the observed discrepancy may be accounted for by thedependence of the interface energy between the AF and FM<missing VAR> layers with the valueof the external applied field (H) as recently observed in anisotropicmagnetoresistance measurements, lending support to our proposal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(H)
###Field Dependence of the Interface Energy in Af/FM Bilayers|J. R. L. de Almeida,J. R. Steiner,S. M. Rezende###
(530556, 530558)
 Using a simple microscopic model forrepresenting the AF/FM<missing VAR> interface, which incorporates the effect of interfaceroughness, we propose that the observed discrepancy may be accounted for by thedependence of the interface energy between the AF and FM<missing VAR> layers with the valueof the external applied field (H) as recently observed in anisotropicmagnetoresistance measurements, lending support to our proposal.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Theory of Insulator Metal Transition and Colossal Magnetoresistance in Doped Manganites|T. V. Ramakrishnan,H. R. Krishnamurthy,S. R. Hassan,G. V. Pai###
(530679, 530679)
 The persistent proximity of insulating and metallic phases, a puzzlingcharacterestic of manganites, is argued to arise from the self organization ofthe twofold degenerate eg orbitals of Mn into localized Jahn-Teller(JT)polaronic levels and broad band states due to the large electron - JT phononcoupling present in them.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Relevance of Cooperative Lattice Effects and Correlated Disorder in Phase-Separation Theories for CMR Manganites|Jan Burgy,Adriana Moreo,Elbio Dagotto###
(530856, 530856)
Relevance of Cooperative Lattice Effects and Correlated Disorder in Phase-Separation Theories for CMR Manganites.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Relevance of Cooperative Lattice Effects and Correlated Disorder in Phase-Separation Theories for CMR Manganites|Jan Burgy,Adriana Moreo,Elbio Dagotto###
(530876, 530876)
 Previous theoretical investigations of colossal magnetoresistance (CMR)materials explain this effect using a clustered state with preformedferromagnetic islands that rapidly align their moments with increasing externalmagnetic fields.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Relevance of Cooperative Lattice Effects and Correlated Disorder in Phase-Separation Theories for CMR Manganites|Jan Burgy,Adriana Moreo,Elbio Dagotto###
(530992, 530992)
 This conceptual bottleneck inthe phase-separated CMR scenario is resolved here considering the cooperativenature of the Mn-oxide lattice distortions.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Relevance of Cooperative Lattice Effects and Correlated Disorder in Phase-Separation Theories for CMR Manganites|Jan Burgy,Adriana Moreo,Elbio Dagotto###
(531017, 531017)
 This conceptual bottleneck inthe phase-separated CMR scenario is resolved here considering the cooperativenature of the Mn-oxide lattice distortions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###High-frequency spin valve effect in ferromagnet-semiconductor-ferromagnet structure based on precession of injected spins|A. M. Bratkovsky,V. V. Osipov###
(531179, 531179)
 New mechanism of magnetoresistance, based on tunneling-emission of spinpolarized electrons from ferromagnets (FM) into semiconductors (S) andprecession of electron spin in the semiconductor layer under external magneticfield, is described.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 100, 'GHz', 2]

(S)
###High-frequency spin valve effect in ferromagnet-semiconductor-ferromagnet structure based on precession of injected spins|A. M. Bratkovsky,V. V. Osipov###
(531187, 531189)
 New mechanism of magnetoresistance, based on tunneling-emission of spinpolarized electrons from ferromagnets (FM) into semiconductors (S) andprecession of electron spin in the semiconductor layer under external magneticfield, is described.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 100, 'GHz', 2]

F
###High-frequency spin valve effect in ferromagnet-semiconductor-ferromagnet structure based on precession of injected spins|A. M. Bratkovsky,V. V. Osipov###
(531227, 531227)
 The FM<missing VAR>-S-FM<missing VAR> structure is considered, which includes verythin heavily doped (delta-doped) layers at FM<missing VAR>-S interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 100, 'GHz', 1]

S
###High-frequency spin valve effect in ferromagnet-semiconductor-ferromagnet structure based on precession of injected spins|A. M. Bratkovsky,V. V. Osipov###
(531230, 531230)
 The FM<missing VAR>-S-FM<missing VAR> structure is considered, which includes verythin heavily doped (delta-doped) layers at FM<missing VAR>-S interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 100, 'GHz', 1]

F
###High-frequency spin valve effect in ferromagnet-semiconductor-ferromagnet structure based on precession of injected spins|A. M. Bratkovsky,V. V. Osipov###
(531232, 531232)
 The FM<missing VAR>-S-FM<missing VAR> structure is considered, which includes verythin heavily doped (delta-doped) layers at FM<missing VAR>-S interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 100, 'GHz', 1]

F
###High-frequency spin valve effect in ferromagnet-semiconductor-ferromagnet structure based on precession of injected spins|A. M. Bratkovsky,V. V. Osipov###
(531265, 531265)
 The FM<missing VAR>-S-FM<missing VAR> structure is considered, which includes verythin heavily doped (delta-doped) layers at FM<missing VAR>-S interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 100, 'GHz', 1]

S
###High-frequency spin valve effect in ferromagnet-semiconductor-ferromagnet structure based on precession of injected spins|A. M. Bratkovsky,V. V. Osipov###
(531268, 531268)
 The FM<missing VAR>-S-FM<missing VAR> structure is considered, which includes verythin heavily doped (delta-doped) layers at FM<missing VAR>-S interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 100, 'GHz', 1]

At
###High-frequency spin valve effect in ferromagnet-semiconductor-ferromagnet structure based on precession of injected spins|A. M. Bratkovsky,V. V. Osipov###
(531273, 531273)
 At certainparameters the structure is highly sensitive at room-temperature to variationsof the field with frequencies up to 100 GHz.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 100, 'GHz', 0]

F
###High-frequency spin valve effect in ferromagnet-semiconductor-ferromagnet structure based on precession of injected spins|A. M. Bratkovsky,V. V. Osipov###
(531356, 531356)
 The current oscillates with thefield, and its relative amplitude is determined only by the spin polarizationsof FM<missing VAR>-S junctions at relatively large bias voltage.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 100, 'GHz', 1]

S
###High-frequency spin valve effect in ferromagnet-semiconductor-ferromagnet structure based on precession of injected spins|A. M. Bratkovsky,V. V. Osipov###
(531359, 531359)
 The current oscillates with thefield, and its relative amplitude is determined only by the spin polarizationsof FM<missing VAR>-S junctions at relatively large bias voltage.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 100, 'GHz', 1]

F
###On the Field Dependence of the Interface Energy in Af/FM Bilayers|J. R. L. de Almeida,J. R. Steiner,S. M. Rezende###
(531402, 531402)
On the Field Dependence of the Interface Energy in Af/FM<missing VAR> Bilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###On the Field Dependence of the Interface Energy in Af/FM Bilayers|J. R. L. de Almeida,J. R. Steiner,S. M. Rezende###
(531408, 531408)
 In the investigations of antiferromagnetic (AF)/ ferromagnetic (FM) bilayersamples, often distinct experimental techniques yield different values for themeasured exchange anisotropy field (HE).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###On the Field Dependence of the Interface Energy in Af/FM Bilayers|J. R. L. de Almeida,J. R. Steiner,S. M. Rezende###
(531420, 531420)
 In the investigations of antiferromagnetic (AF)/ ferromagnetic (FM) bilayersamples, often distinct experimental techniques yield different values for themeasured exchange anisotropy field (HE).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###On the Field Dependence of the Interface Energy in Af/FM Bilayers|J. R. L. de Almeida,J. R. Steiner,S. M. Rezende###
(531427, 531427)
 In the investigations of antiferromagnetic (AF)/ ferromagnetic (FM) bilayersamples, often distinct experimental techniques yield different values for themeasured exchange anisotropy field (HE).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###On the Field Dependence of the Interface Energy in Af/FM Bilayers|J. R. L. de Almeida,J. R. Steiner,S. M. Rezende###
(531465, 531465)
 In the investigations of antiferromagnetic (AF)/ ferromagnetic (FM) bilayersamples, often distinct experimental techniques yield different values for themeasured exchange anisotropy field (HE).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F/F
###On the Field Dependence of the Interface Energy in Af/FM Bilayers|J. R. L. de Almeida,J. R. Steiner,S. M. Rezende###
(531547, 531549)
 Using a simplemicroscopic model for representing the AF/FM<missing VAR> interface, which incorporates theeffect of interface roughness, we show that the interface energy between the AFand FM<missing VAR> layer indeed varies with h<missing VAR>, as recently observed in anisotropicmagnetoresistance measurements, lending support to our proposal.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

F
###On the Field Dependence of the Interface Energy in Af/FM Bilayers|J. R. L. de Almeida,J. R. Steiner,S. M. Rezende###
(531588, 531588)
 Using a simplemicroscopic model for representing the AF/FM<missing VAR> interface, which incorporates theeffect of interface roughness, we show that the interface energy between the AFand FM<missing VAR> layer indeed varies with h<missing VAR>, as recently observed in anisotropicmagnetoresistance measurements, lending support to our proposal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###On the Field Dependence of the Interface Energy in Af/FM Bilayers|J. R. L. de Almeida,J. R. Steiner,S. M. Rezende###
(531593, 531593)
 Using a simplemicroscopic model for representing the AF/FM<missing VAR> interface, which incorporates theeffect of interface roughness, we show that the interface energy between the AFand FM<missing VAR> layer indeed varies with h<missing VAR>, as recently observed in anisotropicmagnetoresistance measurements, lending support to our proposal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Spin-filter magnetoresistance in magnetic barrier junctions|Alireza Saffarzadeh###
(531945, 531945)
 The tunnel current and magnetoresistance (TMR) are investigated in magnetictunnel junctions consisting of a spin-filter tunnel barrier, sandwiched betweena ferromagnetic (FM) electrode and a nonmagnetic (NM) electrode.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Spin-filter magnetoresistance in magnetic barrier junctions|Alireza Saffarzadeh###
(531958, 531958)
 The tunnel current and magnetoresistance (TMR) are investigated in magnetictunnel junctions consisting of a spin-filter tunnel barrier, sandwiched betweena ferromagnetic (FM) electrode and a nonmagnetic (NM) electrode.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Spin-filter magnetoresistance in magnetic barrier junctions|Alireza Saffarzadeh###
(532029, 532029)
 The numerical results show that the spin transport depends onthe relative magnetization orientation of the FM<missing VAR> electrode and the spin-filterbarrier, such that the tunnel current reaches its maximum when the magneticmoments of the FM<missing VAR> electrode and the magnetic barrier are parallel.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Spin-filter magnetoresistance in magnetic barrier junctions|Alireza Saffarzadeh###
(532075, 532075)
 The numerical results show that the spin transport depends onthe relative magnetization orientation of the FM<missing VAR> electrode and the spin-filterbarrier, such that the tunnel current reaches its maximum when the magneticmoments of the FM<missing VAR> electrode and the magnetic barrier are parallel.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs/InGaAs/GaAs
###Transverse negative magnetoresistance of 2D structures in the presence of strong in-plane magnetic field: weak localization as a probe of interface roughness|G. M. Minkov,O. E. Rut,A. V. Germanenko,A. A. Sherstobitov,B. N. Zvonkov,D. O. Filatov###
(532192, 532200)
 The interference induced transverse negative magnetoresistance ofGaAs/InGaAs/GaAs quantum well heterostructures has been studied in the presenceof strong in-plane magnetic field.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[54.0, 2, 'D', 1]

In
###Dephasing in disordered metals with superconductive grains|M. A. Skvortsov,A. I. Larkin,M. V. Feigel'man###
(532513, 532513)
 In a broadtemperature range 1/tauphi(T) strongly exceeds the prediction of theclassical theory of dephasing in normal disordered conductors, whereasmagnetoresistance is dominated (in two dimensions) by the Maki-Tompsoncorrection and is positive.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrRuO3
###Large anisotropy in the paramagnetic susceptibility of SrRuO3 films|Yevgeny Kats,Isaschar Genish,Lior Klein,James W. Reiner,M. R. Beasley###
(532857, 532860)
Large anisotropy in the paramagnetic susceptibility of SrRuO3 films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 150, 'K', 1],[62.0, 300, 'K', 1],[189.0, 4, 'd', 3]

SrRuO3
###Large anisotropy in the paramagnetic susceptibility of SrRuO3 films|Yevgeny Kats,Isaschar Genish,Lior Klein,James W. Reiner,M. R. Beasley###
(532879, 532882)
 By using the extraordinary Hall effect in SrRuO3 films we performed sensitivemeasurements of the paramagnetic susceptibility in this itinerant ferromagnet,from Tc ( 150 K) to 300 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 150, 'K', 0],[40.0, 300, 'K', 0],[167.0, 4, 'd', 2]

Tc
###Large anisotropy in the paramagnetic susceptibility of SrRuO3 films|Yevgeny Kats,Isaschar Genish,Lior Klein,James W. Reiner,M. R. Beasley###
(532915, 532915)
 By using the extraordinary Hall effect in SrRuO3 films we performed sensitivemeasurements of the paramagnetic susceptibility in this itinerant ferromagnet,from Tc ( 150 K) to 300 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 150, 'K', 0],[7.0, 300, 'K', 0],[134.0, 4, 'd', 2]

K
###Large anisotropy in the paramagnetic susceptibility of SrRuO3 films|Yevgeny Kats,Isaschar Genish,Lior Klein,James W. Reiner,M. R. Beasley###
(532964, 532964)
 These measurements, combined with measurements ofmagnetoresistance, reveal that the susceptibility, which is almost isotropic at300 K, becomes highly anisotropic as the temperature is lowered, divergingalong a single crystallographic direction in the vicinity of Tc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 150, 'K', 1],[42.0, 300, 'K', 1],[85.0, 4, 'd', 1]

Tc
###Large anisotropy in the paramagnetic susceptibility of SrRuO3 films|Yevgeny Kats,Isaschar Genish,Lior Klein,James W. Reiner,M. R. Beasley###
(533005, 533005)
 These measurements, combined with measurements ofmagnetoresistance, reveal that the susceptibility, which is almost isotropic at300 K, becomes highly anisotropic as the temperature is lowered, divergingalong a single crystallographic direction in the vicinity of Tc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 150, 'K', 1],[83.0, 300, 'K', 1],[44.0, 4, 'd', 1]

F
###Magnetoresistance Effect in Spin-Polarized Junctions of Ferromagnetically Contacting Multiple Conductive Paths: Applications to Atomic Wires and Carbon Nanotubes|Satoshi Kokado,Kikuo Harigaya###
(533599, 533599)
 For spin-polarized junctions of ferromagnetically contacting multipleconductive paths, such as ferromagnet (FM)/atomic wires/FM<missing VAR> and FM<missing VAR>/carbonnanotubes/FM<missing VAR> junctions, we theoretically investigate spin-dependent transportto elucidate the intrinsic relation between the number of paths and conduction,and to enhance the magnetoresistance (MR) ratio.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Magnetoresistance Effect in Spin-Polarized Junctions of Ferromagnetically Contacting Multiple Conductive Paths: Applications to Atomic Wires and Carbon Nanotubes|Satoshi Kokado,Kikuo Harigaya###
(533607, 533607)
 For spin-polarized junctions of ferromagnetically contacting multipleconductive paths, such as ferromagnet (FM)/atomic wires/FM<missing VAR> and FM<missing VAR>/carbonnanotubes/FM<missing VAR> junctions, we theoretically investigate spin-dependent transportto elucidate the intrinsic relation between the number of paths and conduction,and to enhance the magnetoresistance (MR) ratio.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Magnetoresistance Effect in Spin-Polarized Junctions of Ferromagnetically Contacting Multiple Conductive Paths: Applications to Atomic Wires and Carbon Nanotubes|Satoshi Kokado,Kikuo Harigaya###
(533612, 533612)
 For spin-polarized junctions of ferromagnetically contacting multipleconductive paths, such as ferromagnet (FM)/atomic wires/FM<missing VAR> and FM<missing VAR>/carbonnanotubes/FM<missing VAR> junctions, we theoretically investigate spin-dependent transportto elucidate the intrinsic relation between the number of paths and conduction,and to enhance the magnetoresistance (MR) ratio.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Magnetoresistance Effect in Spin-Polarized Junctions of Ferromagnetically Contacting Multiple Conductive Paths: Applications to Atomic Wires and Carbon Nanotubes|Satoshi Kokado,Kikuo Harigaya###
(533620, 533620)
 For spin-polarized junctions of ferromagnetically contacting multipleconductive paths, such as ferromagnet (FM)/atomic wires/FM<missing VAR> and FM<missing VAR>/carbonnanotubes/FM<missing VAR> junctions, we theoretically investigate spin-dependent transportto elucidate the intrinsic relation between the number of paths and conduction,and to enhance the magnetoresistance (MR) ratio.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Magnetoresistance Effect in Spin-Polarized Junctions of Ferromagnetically Contacting Multiple Conductive Paths: Applications to Atomic Wires and Carbon Nanotubes|Satoshi Kokado,Kikuo Harigaya###
(533702, 533702)
 When many paths are randomlylocated between the two FMs, electronic wave interference between the FMsappears, and then the MR ratio increases with increasing number of paths.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Magnetoresistance Effect in Spin-Polarized Junctions of Ferromagnetically Contacting Multiple Conductive Paths: Applications to Atomic Wires and Carbon Nanotubes|Satoshi Kokado,Kikuo Harigaya###
(533716, 533716)
 When many paths are randomlylocated between the two FMs, electronic wave interference between the FMsappears, and then the MR ratio increases with increasing number of paths.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Magnetoresistance Effect in Spin-Polarized Junctions of Ferromagnetically Contacting Multiple Conductive Paths: Applications to Atomic Wires and Carbon Nanotubes|Satoshi Kokado,Kikuo Harigaya###
(533812, 533812)
Furthermore, at each number of paths, the MR ratio for carbon nanotubes becomeslarger than that for atomic wires, reflecting the characteristic shape ofpoints in contact with the FM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Impurity-induced tuning of quantum well states in spin-dependent resonant tunneling|A. Kalitsov,A. Coho,N. Kioussis,A. Vedyayev,M. Chshiev,A. Granovsky###
(534016, 534016)
 The underlying mechanism isthe impurity-induced shift of the quantum well states (Q<missing VAR>WS) which depends onthe impurity potential, impurity position and the symmetry of the Q<missing VAR>WS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WS
###Impurity-induced tuning of quantum well states in spin-dependent resonant tunneling|A. Kalitsov,A. Coho,N. Kioussis,A. Vedyayev,M. Chshiev,A. Granovsky###
(534048, 534049)
 The underlying mechanism isthe impurity-induced shift of the quantum well states (Q<missing VAR>WS) which depends onthe impurity potential, impurity position and the symmetry of the Q<missing VAR>WS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuB6
###Spin-polaron model: transport properties of EuB$_6$|Jayita Chatterjee,Unjong Yu,B. I. Min###
(534072, 534074)
Spin-polaron model transport properties of EuB6.
Featurization terminated normally.
0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuB6
###Spin-polaron model: transport properties of EuB$_6$|Jayita Chatterjee,Unjong Yu,B. I. Min###
(534089, 534091)
 To understand anomalous transport properties of EuB6, we have studied thespin-polaron Hamiltonian incorporating the electron-phonon interaction.
Featurization terminated normally.
0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuB6
###Spin-polaron model: transport properties of EuB$_6$|Jayita Chatterjee,Unjong Yu,B. I. Min###
(534179, 534181)
 The temperature and magneticfield dependence of the resistivity of EuB6 are well explained.
Featurization terminated normally.
0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Spin-polaron model: transport properties of EuB$_6$|Jayita Chatterjee,Unjong Yu,B. I. Min###
(534190, 534190)
 At lowtemperature, magnons dominate the conduction process, whereas the latticecontribution becomes significant at very high temperature due to the scatteringwith the phonons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuB6
###Spin-polaron model: transport properties of EuB$_6$|Jayita Chatterjee,Unjong Yu,B. I. Min###
(534273, 534275)
 Large negative magnetoresistance near the ferromagnetictransition is also reproduced as observed in EuB6.
Featurization terminated normally.
0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.67Ca0.33MnO3
###Electrical transport and magnetic properties of nanostructured La0.67Ca0.33MnO3|Y. G. Zhao,W. Cai,X. S. Wu,X. P. Zhang,K. Wang,S. N. Gao,L. Lu###
(534300, 534306)
Electrical transport and magnetic properties of nanostructured La0.67Ca0.33MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.066,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.134,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.67Ca0.33MnO3
###Electrical transport and magnetic properties of nanostructured La0.67Ca0.33MnO3|Y. G. Zhao,W. Cai,X. S. Wu,X. P. Zhang,K. Wang,S. N. Gao,L. Lu###
(534311, 534317)
 Nanostructured La0.67Ca0.33MnO3 (NS-LCMO) was formed by pulsed-laserdeposition on the surface of porous Al2O3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.066,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.134,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NS
###Electrical transport and magnetic properties of nanostructured La0.67Ca0.33MnO3|Y. G. Zhao,W. Cai,X. S. Wu,X. P. Zhang,K. Wang,S. N. Gao,L. Lu###
(534320, 534321)
 Nanostructured La0.67Ca0.33MnO3 (NS-LCMO) was formed by pulsed-laserdeposition on the surface of porous Al2O3.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Electrical transport and magnetic properties of nanostructured La0.67Ca0.33MnO3|Y. G. Zhao,W. Cai,X. S. Wu,X. P. Zhang,K. Wang,S. N. Gao,L. Lu###
(534326, 534326)
 Nanostructured La0.67Ca0.33MnO3 (NS-LCMO) was formed by pulsed-laserdeposition on the surface of porous Al2O3.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Al2O3
###Electrical transport and magnetic properties of nanostructured La0.67Ca0.33MnO3|Y. G. Zhao,W. Cai,X. S. Wu,X. P. Zhang,K. Wang,S. N. Gao,L. Lu###
(534352, 534355)
 Nanostructured La0.67Ca0.33MnO3 (NS-LCMO) was formed by pulsed-laserdeposition on the surface of porous Al2O3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NS
###Electrical transport and magnetic properties of nanostructured La0.67Ca0.33MnO3|Y. G. Zhao,W. Cai,X. S. Wu,X. P. Zhang,K. Wang,S. N. Gao,L. Lu###
(534375, 534376)
 The resistance peak temperature (Tp)of the NS-LCMO increases with increasing average thickness of the films, whiletheir Curie temperatures (Tc) remain unchanged.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Electrical transport and magnetic properties of nanostructured La0.67Ca0.33MnO3|Y. G. Zhao,W. Cai,X. S. Wu,X. P. Zhang,K. Wang,S. N. Gao,L. Lu###
(534381, 534381)
 The resistance peak temperature (Tp)of the NS-LCMO increases with increasing average thickness of the films, whiletheir Curie temperatures (Tc) remain unchanged.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(Tc)
###Electrical transport and magnetic properties of nanostructured La0.67Ca0.33MnO3|Y. G. Zhao,W. Cai,X. S. Wu,X. P. Zhang,K. Wang,S. N. Gao,L. Lu###
(534409, 534411)
 The resistance peak temperature (Tp)of the NS-LCMO increases with increasing average thickness of the films, whiletheir Curie temperatures (Tc) remain unchanged.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Electrical transport and magnetic properties of nanostructured La0.67Ca0.33MnO3|Y. G. Zhao,W. Cai,X. S. Wu,X. P. Zhang,K. Wang,S. N. Gao,L. Lu###
(534477, 534477)
 The coercive field of thesamples increases with decreasing film thickness and its temperature dependencecan be well described by Hc(T)  Hc(0)[1-(T/TB)1/2].
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NS
###Electrical transport and magnetic properties of nanostructured La0.67Ca0.33MnO3|Y. G. Zhao,W. Cai,X. S. Wu,X. P. Zhang,K. Wang,S. N. Gao,L. Lu###
(534508, 534509)
 A large magnetoresistanceand strong memory effect were observed for the NS-LCMO.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Electrical transport and magnetic properties of nanostructured La0.67Ca0.33MnO3|Y. G. Zhao,W. Cai,X. S. Wu,X. P. Zhang,K. Wang,S. N. Gao,L. Lu###
(534514, 534514)
 A large magnetoresistanceand strong memory effect were observed for the NS-LCMO.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La2-x
###Localization and Interaction Effects in Strongly Underdoped La2-xSrxCuO4|Marta Z. Cieplak,A. Malinowski,S. Guha,M. Berkowski###
(534598, 534601)
Localization and Interaction Effects in Strongly Underdoped La2-xSrxCuO4.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[59.0, 1.6, 'K', 1],[62.0, 100, 'K', 1],[77.0, 14, 'T', 1]

CuO4
###Localization and Interaction Effects in Strongly Underdoped La2-xSrxCuO4|Marta Z. Cieplak,A. Malinowski,S. Guha,M. Berkowski###
(534603, 534605)
Localization and Interaction Effects in Strongly Underdoped La2-xSrxCuO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 1.6, 'K', 1],[58.0, 100, 'K', 1],[73.0, 14, 'T', 1]

La2-x
###Localization and Interaction Effects in Strongly Underdoped La2-xSrxCuO4|Marta Z. Cieplak,A. Malinowski,S. Guha,M. Berkowski###
(534623, 534626)
 The in-plane magnetoresistance (MR) in La2-xSrxCuO4 films with 0.03 < x<missing VAR> <0.05 has been studied in the temperature range 1.6 K to 100 K, and in magneticfields up to 14 T, parallel and perpendicular to the CuO2 planes.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[34.0, 1.6, 'K', 0],[37.0, 100, 'K', 0],[52.0, 14, 'T', 0]

CuO4
###Localization and Interaction Effects in Strongly Underdoped La2-xSrxCuO4|Marta Z. Cieplak,A. Malinowski,S. Guha,M. Berkowski###
(534628, 534630)
 The in-plane magnetoresistance (MR) in La2-xSrxCuO4 films with 0.03 < x<missing VAR> <0.05 has been studied in the temperature range 1.6 K to 100 K, and in magneticfields up to 14 T, parallel and perpendicular to the CuO2 planes.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 1.6, 'K', 0],[33.0, 100, 'K', 0],[48.0, 14, 'T', 0]

CuO2
###Localization and Interaction Effects in Strongly Underdoped La2-xSrxCuO4|Marta Z. Cieplak,A. Malinowski,S. Guha,M. Berkowski###
(534691, 534693)
 The in-plane magnetoresistance (MR) in La2-xSrxCuO4 films with 0.03 < x<missing VAR> <0.05 has been studied in the temperature range 1.6 K to 100 K, and in magneticfields up to 14 T, parallel and perpendicular to the CuO2 planes.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 1.6, 'K', 0],[28.0, 100, 'K', 0],[13.0, 14, 'T', 0]

Pr1.3-xLa0.7Ce
###"Spin-Flop" Transition and Anisotropic Magnetoresistance in Pr_{1.3-x}La_{0.7}Ce_{x}CuO_{4}: Unexpectedly Strong Spin-Charge Coupling in Electron-Doped Cuprates|A. N. Lavrov,H. J. Kang,Y. Kurita,T. Suzuki,Seiki Komiya,J. W. Lynn,S. -H. Lee,Pengcheng Dai,Yoichi Ando###
(534861, 534867)
Spin-Flop Transition and Anisotropic Magnetoresistance in Pr1.3-xLa0.7Cex<missing VAR>CuO4 Unexpectedly Strong Spin-Charge Coupling in Electron-Doped Cuprates.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[228.0, 30, '%', 3]

CuO4
###"Spin-Flop" Transition and Anisotropic Magnetoresistance in Pr_{1.3-x}La_{0.7}Ce_{x}CuO_{4}: Unexpectedly Strong Spin-Charge Coupling in Electron-Doped Cuprates|A. N. Lavrov,H. J. Kang,Y. Kurita,T. Suzuki,Seiki Komiya,J. W. Lynn,S. -H. Lee,Pengcheng Dai,Yoichi Ando###
(534869, 534871)
Spin-Flop Transition and Anisotropic Magnetoresistance in Pr1.3-xLa0.7Cex<missing VAR>CuO4 Unexpectedly Strong Spin-Charge Coupling in Electron-Doped Cuprates.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[224.0, 30, '%', 3]

CuO2
###"Spin-Flop" Transition and Anisotropic Magnetoresistance in Pr_{1.3-x}La_{0.7}Ce_{x}CuO_{4}: Unexpectedly Strong Spin-Charge Coupling in Electron-Doped Cuprates|A. N. Lavrov,H. J. Kang,Y. Kurita,T. Suzuki,Seiki Komiya,J. W. Lynn,S. -H. Lee,Pengcheng Dai,Yoichi Ando###
(534940, 534942)
 We use transport and neutron-scattering measurements to show that amagnetic-field-induced transition from noncollinear to collinear spinarrangement in adjacent CuO2 planes of lightly electron-dopedPr1.3-xLa0.7Cex<missing VAR>CuO4 (x<missing VAR>0.01) crystals affects significantly boththe in-plane and out-of-plane resistivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 30, '%', 2]

Pr1.3-xLa0.7Ce
###"Spin-Flop" Transition and Anisotropic Magnetoresistance in Pr_{1.3-x}La_{0.7}Ce_{x}CuO_{4}: Unexpectedly Strong Spin-Charge Coupling in Electron-Doped Cuprates|A. N. Lavrov,H. J. Kang,Y. Kurita,T. Suzuki,Seiki Komiya,J. W. Lynn,S. -H. Lee,Pengcheng Dai,Yoichi Ando###
(534955, 534961)
 We use transport and neutron-scattering measurements to show that amagnetic-field-induced transition from noncollinear to collinear spinarrangement in adjacent CuO2 planes of lightly electron-dopedPr1.3-xLa0.7Cex<missing VAR>CuO4 (x<missing VAR>0.01) crystals affects significantly boththe in-plane and out-of-plane resistivity.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[134.0, 30, '%', 2]

CuO4
###"Spin-Flop" Transition and Anisotropic Magnetoresistance in Pr_{1.3-x}La_{0.7}Ce_{x}CuO_{4}: Unexpectedly Strong Spin-Charge Coupling in Electron-Doped Cuprates|A. N. Lavrov,H. J. Kang,Y. Kurita,T. Suzuki,Seiki Komiya,J. W. Lynn,S. -H. Lee,Pengcheng Dai,Yoichi Ando###
(534963, 534965)
 We use transport and neutron-scattering measurements to show that amagnetic-field-induced transition from noncollinear to collinear spinarrangement in adjacent CuO2 planes of lightly electron-dopedPr1.3-xLa0.7Cex<missing VAR>CuO4 (x<missing VAR>0.01) crystals affects significantly boththe in-plane and out-of-plane resistivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 30, '%', 2]

In
###"Spin-Flop" Transition and Anisotropic Magnetoresistance in Pr_{1.3-x}La_{0.7}Ce_{x}CuO_{4}: Unexpectedly Strong Spin-Charge Coupling in Electron-Doped Cuprates|A. N. Lavrov,H. J. Kang,Y. Kurita,T. Suzuki,Seiki Komiya,J. W. Lynn,S. -H. Lee,Pengcheng Dai,Yoichi Ando###
(534998, 534998)
 In the high-field collinear state,the magnetoresistance (MR) does not saturate, but exhibits an intriguingfour-fold-symmetric angular dependence, oscillating from being positive atB//[100] to being negative at B//[110].
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 30, '%', 1]

B
###"Spin-Flop" Transition and Anisotropic Magnetoresistance in Pr_{1.3-x}La_{0.7}Ce_{x}CuO_{4}: Unexpectedly Strong Spin-Charge Coupling in Electron-Doped Cuprates|A. N. Lavrov,H. J. Kang,Y. Kurita,T. Suzuki,Seiki Komiya,J. W. Lynn,S. -H. Lee,Pengcheng Dai,Yoichi Ando###
(535059, 535059)
 In the high-field collinear state,the magnetoresistance (MR) does not saturate, but exhibits an intriguingfour-fold-symmetric angular dependence, oscillating from being positive atB//[100] to being negative at B//[110].
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 30, '%', 1]

B
###"Spin-Flop" Transition and Anisotropic Magnetoresistance in Pr_{1.3-x}La_{0.7}Ce_{x}CuO_{4}: Unexpectedly Strong Spin-Charge Coupling in Electron-Doped Cuprates|A. N. Lavrov,H. J. Kang,Y. Kurita,T. Suzuki,Seiki Komiya,J. W. Lynn,S. -H. Lee,Pengcheng Dai,Yoichi Ando###
(535074, 535074)
 In the high-field collinear state,the magnetoresistance (MR) does not saturate, but exhibits an intriguingfour-fold-symmetric angular dependence, oscillating from being positive atB//[100] to being negative at B//[110].
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 30, '%', 1]

In
###Intensity of Coulomb Interaction between quasiparticles in diffusive metallic wires|B. Huard,A. Anthore,F. Pierre,H. Pothier,Norman O. Birge,D. Esteve###
(535270, 535270)
 In both types of experiment, the energydependence of the Coulomb interaction is found to be in excellent agreementwith theoretical predictions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Intensity of Coulomb Interaction between quasiparticles in diffusive metallic wires|B. Huard,A. Anthore,F. Pierre,H. Pothier,Norman O. Birge,D. Esteve###
(535318, 535318)
 In contrast, the intensity of the interactionagrees closely with theory only with the first method, whereas an importantdiscrepancy is found using the second one.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

InAs/AlGaSb
###Andreev reflection at high magnetic fields: Evidence for electron and hole transport in edge states|J. Eroms,D. Weiss,J. De Boeck,G. Borghs,U. Zülicke###
(535466, 535471)
 We have studied magnetotransport in arrays of niobium filled grooves in anInAs/AlGaSb heterostructure.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[16.0, 2.6, 'T', 1]

In
###Andreev reflection at high magnetic fields: Evidence for electron and hole transport in edge states|J. Eroms,D. Weiss,J. De Boeck,G. Borghs,U. Zülicke###
(535505, 535505)
 In the superconducting state, we observe strongmagnetoresistance oscillations, whose amplitude exceeds the Shubnikov-de Haasoscillations by a factor of about two, when normalized to the background.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 2.6, 'T', 1]

Ge1-xSi
###Effect of Zeeman splitting on magnetoresistivity of 2D hole gas in a Ge_{1-x}Si_x/Ge/Ge_{1-x}Si_x quantum well|Yu. G. Arapov,V. N. Neverov,G. I. Harus,N. G. Shelushinina,M. V. Yakunin,O. A. Kuznetsov,A. de Visser,L. Ponomarenko###
(535689, 535693)
Effect of Zeeman splitting on magnetoresistivity of 2D hole gas in a Ge1-xSix<missing VAR>/Ge/Ge1-xSix<missing VAR> quantum well.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[10.0, 2, 'D', 0],[105.0, 2, 'D', 1]

Ge/Ge1-xSi
###Effect of Zeeman splitting on magnetoresistivity of 2D hole gas in a Ge_{1-x}Si_x/Ge/Ge_{1-x}Si_x quantum well|Yu. G. Arapov,V. N. Neverov,G. I. Harus,N. G. Shelushinina,M. V. Yakunin,O. A. Kuznetsov,A. de Visser,L. Ponomarenko###
(535696, 535702)
Effect of Zeeman splitting on magnetoresistivity of 2D hole gas in a Ge1-xSix<missing VAR>/Ge/Ge1-xSix<missing VAR> quantum well.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[17.0, 2, 'D', 0],[96.0, 2, 'D', 1]

Cu
###Changes in magnetic scattering anisotropy at a ferromagnetic/superconducting interface|K. Eid,H. Kurt,W. P. Pratt Jr.,J. Bass###
(536017, 536017)
 We show that some metals and alloys (X<missing VAR>  Cu, Ag, FeMn, or Cu and Ag combinedwith each other), sputtered between ferromagnetic Co and superconducting Nb,produce no change in current-perpendicular-to-plane magnetoresistance (CPP-MR)in a carefully designed CPP-spin-valve.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ag
###Changes in magnetic scattering anisotropy at a ferromagnetic/superconducting interface|K. Eid,H. Kurt,W. P. Pratt Jr.,J. Bass###
(536020, 536020)
 We show that some metals and alloys (X<missing VAR>  Cu, Ag, FeMn, or Cu and Ag combinedwith each other), sputtered between ferromagnetic Co and superconducting Nb,produce no change in current-perpendicular-to-plane magnetoresistance (CPP-MR)in a carefully designed CPP-spin-valve.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeMn
###Changes in magnetic scattering anisotropy at a ferromagnetic/superconducting interface|K. Eid,H. Kurt,W. P. Pratt Jr.,J. Bass###
(536023, 536024)
 We show that some metals and alloys (X<missing VAR>  Cu, Ag, FeMn, or Cu and Ag combinedwith each other), sputtered between ferromagnetic Co and superconducting Nb,produce no change in current-perpendicular-to-plane magnetoresistance (CPP-MR)in a carefully designed CPP-spin-valve.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Changes in magnetic scattering anisotropy at a ferromagnetic/superconducting interface|K. Eid,H. Kurt,W. P. Pratt Jr.,J. Bass###
(536029, 536029)
 We show that some metals and alloys (X<missing VAR>  Cu, Ag, FeMn, or Cu and Ag combinedwith each other), sputtered between ferromagnetic Co and superconducting Nb,produce no change in current-perpendicular-to-plane magnetoresistance (CPP-MR)in a carefully designed CPP-spin-valve.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ag
###Changes in magnetic scattering anisotropy at a ferromagnetic/superconducting interface|K. Eid,H. Kurt,W. P. Pratt Jr.,J. Bass###
(536033, 536033)
 We show that some metals and alloys (X<missing VAR>  Cu, Ag, FeMn, or Cu and Ag combinedwith each other), sputtered between ferromagnetic Co and superconducting Nb,produce no change in current-perpendicular-to-plane magnetoresistance (CPP-MR)in a carefully designed CPP-spin-valve.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Changes in magnetic scattering anisotropy at a ferromagnetic/superconducting interface|K. Eid,H. Kurt,W. P. Pratt Jr.,J. Bass###
(536052, 536052)
 We show that some metals and alloys (X<missing VAR>  Cu, Ag, FeMn, or Cu and Ag combinedwith each other), sputtered between ferromagnetic Co and superconducting Nb,produce no change in current-perpendicular-to-plane magnetoresistance (CPP-MR)in a carefully designed CPP-spin-valve.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nb
###Changes in magnetic scattering anisotropy at a ferromagnetic/superconducting interface|K. Eid,H. Kurt,W. P. Pratt Jr.,J. Bass###
(536058, 536058)
 We show that some metals and alloys (X<missing VAR>  Cu, Ag, FeMn, or Cu and Ag combinedwith each other), sputtered between ferromagnetic Co and superconducting Nb,produce no change in current-perpendicular-to-plane magnetoresistance (CPP-MR)in a carefully designed CPP-spin-valve.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CPP
###Changes in magnetic scattering anisotropy at a ferromagnetic/superconducting interface|K. Eid,H. Kurt,W. P. Pratt Jr.,J. Bass###
(536081, 536083)
 We show that some metals and alloys (X<missing VAR>  Cu, Ag, FeMn, or Cu and Ag combinedwith each other), sputtered between ferromagnetic Co and superconducting Nb,produce no change in current-perpendicular-to-plane magnetoresistance (CPP-MR)in a carefully designed CPP-spin-valve.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CPP
###Changes in magnetic scattering anisotropy at a ferromagnetic/superconducting interface|K. Eid,H. Kurt,W. P. Pratt Jr.,J. Bass###
(536098, 536100)
 We show that some metals and alloys (X<missing VAR>  Cu, Ag, FeMn, or Cu and Ag combinedwith each other), sputtered between ferromagnetic Co and superconducting Nb,produce no change in current-perpendicular-to-plane magnetoresistance (CPP-MR)in a carefully designed CPP-spin-valve.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Changes in magnetic scattering anisotropy at a ferromagnetic/superconducting interface|K. Eid,H. Kurt,W. P. Pratt Jr.,J. Bass###
(536107, 536107)
 In contrast, other metals (Ru or Au) orcombinations (Cu or Ag combined with Au, Ru, or FeMn) change the CPP-MR, insome cases even reversing its sign.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ru
###Changes in magnetic scattering anisotropy at a ferromagnetic/superconducting interface|K. Eid,H. Kurt,W. P. Pratt Jr.,J. Bass###
(536117, 536117)
 In contrast, other metals (Ru or Au) orcombinations (Cu or Ag combined with Au, Ru, or FeMn) change the CPP-MR, insome cases even reversing its sign.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Au
###Changes in magnetic scattering anisotropy at a ferromagnetic/superconducting interface|K. Eid,H. Kurt,W. P. Pratt Jr.,J. Bass###
(536121, 536121)
 In contrast, other metals (Ru or Au) orcombinations (Cu or Ag combined with Au, Ru, or FeMn) change the CPP-MR, insome cases even reversing its sign.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Changes in magnetic scattering anisotropy at a ferromagnetic/superconducting interface|K. Eid,H. Kurt,W. P. Pratt Jr.,J. Bass###
(536130, 536130)
 In contrast, other metals (Ru or Au) orcombinations (Cu or Ag combined with Au, Ru, or FeMn) change the CPP-MR, insome cases even reversing its sign.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ag
###Changes in magnetic scattering anisotropy at a ferromagnetic/superconducting interface|K. Eid,H. Kurt,W. P. Pratt Jr.,J. Bass###
(536134, 536134)
 In contrast, other metals (Ru or Au) orcombinations (Cu or Ag combined with Au, Ru, or FeMn) change the CPP-MR, insome cases even reversing its sign.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Au
###Changes in magnetic scattering anisotropy at a ferromagnetic/superconducting interface|K. Eid,H. Kurt,W. P. Pratt Jr.,J. Bass###
(536140, 536140)
 In contrast, other metals (Ru or Au) orcombinations (Cu or Ag combined with Au, Ru, or FeMn) change the CPP-MR, insome cases even reversing its sign.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ru
###Changes in magnetic scattering anisotropy at a ferromagnetic/superconducting interface|K. Eid,H. Kurt,W. P. Pratt Jr.,J. Bass###
(536143, 536143)
 In contrast, other metals (Ru or Au) orcombinations (Cu or Ag combined with Au, Ru, or FeMn) change the CPP-MR, insome cases even reversing its sign.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Changes in magnetic scattering anisotropy at a ferromagnetic/superconducting interface|K. Eid,H. Kurt,W. P. Pratt Jr.,J. Bass###
(536149, 536149)
 In contrast, other metals (Ru or Au) orcombinations (Cu or Ag combined with Au, Ru, or FeMn) change the CPP-MR, insome cases even reversing its sign.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CPP
###Changes in magnetic scattering anisotropy at a ferromagnetic/superconducting interface|K. Eid,H. Kurt,W. P. Pratt Jr.,J. Bass###
(536156, 536158)
 In contrast, other metals (Ru or Au) orcombinations (Cu or Ag combined with Au, Ru, or FeMn) change the CPP-MR, insome cases even reversing its sign.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Changes in magnetic scattering anisotropy at a ferromagnetic/superconducting interface|K. Eid,H. Kurt,W. P. Pratt Jr.,J. Bass###
(536227, 536227)
 We ascribe these changes to activation ofmagnetic scattering anisotropies at a ferromagnetic/superconducting interface,apparently by strong spin-flipping between the Co and Nb layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nb
###Changes in magnetic scattering anisotropy at a ferromagnetic/superconducting interface|K. Eid,H. Kurt,W. P. Pratt Jr.,J. Bass###
(536231, 536231)
 We ascribe these changes to activation ofmagnetic scattering anisotropies at a ferromagnetic/superconducting interface,apparently by strong spin-flipping between the Co and Nb layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Berry's phase contribution to the anomalous Hall effect of gadolinium|S. A. Baily,M. B. Salamon###
(536312, 536312)
 When conduction electrons are forced to follow the local spin texture, theresulting Berry phase can induce an anomalous Hall effect (AHE).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 30, 'T', 2],[118.0, 2, 'K', 3],[121.0, 400, 'K', 3]

In
###Berry's phase contribution to the anomalous Hall effect of gadolinium|S. A. Baily,M. B. Salamon###
(536317, 536317)
 In gadolinium,as in double-exchange magnets, the exchange interaction is mediated by theconduction electrons and the AHE<missing VAR> may therefore resemble that of chromiumdioxide and other metallic double-exchange ferromagnets.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 30, 'T', 1],[113.0, 2, 'K', 2],[116.0, 400, 'K', 2]

H
###Berry's phase contribution to the anomalous Hall effect of gadolinium|S. A. Baily,M. B. Salamon###
(536358, 536358)
 In gadolinium,as in double-exchange magnets, the exchange interaction is mediated by theconduction electrons and the AHE<missing VAR> may therefore resemble that of chromiumdioxide and other metallic double-exchange ferromagnets.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 30, 'T', 1],[72.0, 2, 'K', 2],[75.0, 400, 'K', 2]

Bi1.74Pb0.38Sr1.88CuO6
###Pseudogap formation and superconductivity of Bi$_{1.74}$Pb$_{0.38}$Sr$_{1.88}$CuO$_{6+δ}$ by studies of out-of-plane resistivity in magnetic fields|K. Kudo,Y. Miyoshi,T. Sasaki,N. Kobayashi###
(536523, 536531)
Pseudogap formation and superconductivity of Bi1.74Pb0.38Sr1.88CuO6 by studies of out-of-plane resistivity in magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5454545454545454,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.09090909090909091,0,0,0,0,0,0,0,0,0.1709090909090909,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.034545454545454546,0.15818181818181817,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi1.74Pb0.38Sr1.88CuO6
###Pseudogap formation and superconductivity of Bi$_{1.74}$Pb$_{0.38}$Sr$_{1.88}$CuO$_{6+δ}$ by studies of out-of-plane resistivity in magnetic fields|K. Kudo,Y. Miyoshi,T. Sasaki,N. Kobayashi###
(536584, 536592)
 We report the out-of-plane resistivity in the systematicallyoxygen-controlled single crystalsBi1.74Pb0.38Sr1.88CuO6delta in magnetic fields parallelto the c<missing VAR>-axis.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5454545454545454,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.09090909090909091,0,0,0,0,0,0,0,0,0.1709090909090909,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.034545454545454546,0.15818181818181817,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu2
###Pseudogap formation and superconductivity of Bi$_{1.74}$Pb$_{0.38}$Sr$_{1.88}$CuO$_{6+δ}$ by studies of out-of-plane resistivity in magnetic fields|K. Kudo,Y. Miyoshi,T. Sasaki,N. Kobayashi###
(536777, 536778)
 The gapopened at T<missing VAR> may relate to another phenomenon with the different energyscale such as the antiferromagnetic excitation due to the exchange interactionbetween Cu2 spins.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

RuSr2Gd1-x
###Magnetothermopower and Magnetoresistivity of RuSr2Gd1-xLaxCu2O8 (x=0, 0.1)|C. -J. Liu,C. -S. Sheu,T. -W. Wu,L. -C. Huang,F. H. Hsu,H. D. Yang,G. V. M. Williams,Chia-Jung C. Liu###
(537019, 537025)
Magnetothermopower and Magnetoresistivity of RuSr2Gd1-xLaxCu2O8 (x<missing VAR>0, 0.1).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[9.0, 0, ',', 0],[60.0, 0, ',', 1],[95.0, 5, 'T', 2]

Cu2O8
###Magnetothermopower and Magnetoresistivity of RuSr2Gd1-xLaxCu2O8 (x=0, 0.1)|C. -J. Liu,C. -S. Sheu,T. -W. Wu,L. -C. Huang,F. H. Hsu,H. D. Yang,G. V. M. Williams,Chia-Jung C. Liu###
(537027, 537030)
Magnetothermopower and Magnetoresistivity of RuSr2Gd1-xLaxCu2O8 (x<missing VAR>0, 0.1).
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 0, ',', 0],[55.0, 0, ',', 1],[90.0, 5, 'T', 2]

RuSr2Gd1-x
###Magnetothermopower and Magnetoresistivity of RuSr2Gd1-xLaxCu2O8 (x=0, 0.1)|C. -J. Liu,C. -S. Sheu,T. -W. Wu,L. -C. Huang,F. H. Hsu,H. D. Yang,G. V. M. Williams,Chia-Jung C. Liu###
(537068, 537074)
 We report measurements of magnetothermopower and magnetoresistivity as afunction of temperature on RuSr2Gd1-xLaxCu2O8 (x<missing VAR>  0, 0.1).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[34.0, 0, ',', 1],[11.0, 0, ',', 0],[46.0, 5, 'T', 1]

Cu2O8
###Magnetothermopower and Magnetoresistivity of RuSr2Gd1-xLaxCu2O8 (x=0, 0.1)|C. -J. Liu,C. -S. Sheu,T. -W. Wu,L. -C. Huang,F. H. Hsu,H. D. Yang,G. V. M. Williams,Chia-Jung C. Liu###
(537076, 537079)
 We report measurements of magnetothermopower and magnetoresistivity as afunction of temperature on RuSr2Gd1-xLaxCu2O8 (x<missing VAR>  0, 0.1).
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 0, ',', 1],[6.0, 0, ',', 0],[41.0, 5, 'T', 1]

RuO2
###Magnetothermopower and Magnetoresistivity of RuSr2Gd1-xLaxCu2O8 (x=0, 0.1)|C. -J. Liu,C. -S. Sheu,T. -W. Wu,L. -C. Huang,F. H. Hsu,H. D. Yang,G. V. M. Williams,Chia-Jung C. Liu###
(537160, 537162)
 Our results suggest that RuO2 layers are conducting and the magneticfield induced decrease of the overall thermopower is caused by the decrease ofpartial thermopower decrease associated with the spin entropy decrease of thecarriers in the RuO2 layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 0, ',', 3],[75.0, 0, ',', 2],[40.0, 5, 'T', 1]

RuO2
###Magnetothermopower and Magnetoresistivity of RuSr2Gd1-xLaxCu2O8 (x=0, 0.1)|C. -J. Liu,C. -S. Sheu,T. -W. Wu,L. -C. Huang,F. H. Hsu,H. D. Yang,G. V. M. Williams,Chia-Jung C. Liu###
(537233, 537235)
 Our results suggest that RuO2 layers are conducting and the magneticfield induced decrease of the overall thermopower is caused by the decrease ofpartial thermopower decrease associated with the spin entropy decrease of thecarriers in the RuO2 layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[199.0, 0, ',', 3],[148.0, 0, ',', 2],[113.0, 5, 'T', 1]

Re
###Re-entrant Behavior and Gigantic Response in Disordered Spin-Peierls System|Hitoshi Seo,Yukitoshi Motome,Naoto Nagaosa###
(537248, 537248)
Re-entrant Behavior and Gigantic Response in Disordered Spin-Peierls System.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr3Ru2O7
###Unusual Oscillation in Tunneling Magnetoresistance near a Quantum Critical Point in Sr$_3$Ru$_2$O$_7$|Joe Hooper,Zhiqiang Mao,Robin Perry,Yoshiteru Maeno###
(537537, 537542)
Unusual Oscillation in Tunneling Magnetoresistance near a Quantum Critical Point in Sr3Ru2O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 7, 'K', 2],[146.0, 2, 'mV', 4]

Sr3Ru2O7
###Unusual Oscillation in Tunneling Magnetoresistance near a Quantum Critical Point in Sr$_3$Ru$_2$O$_7$|Joe Hooper,Zhiqiang Mao,Robin Perry,Yoshiteru Maeno###
(537564, 537569)
 We performed single electron tunneling measurements on bilayer ruthenateSr3Ru2O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 7, 'K', 1],[119.0, 2, 'mV', 3]

In
###Unusual Oscillation in Tunneling Magnetoresistance near a Quantum Critical Point in Sr$_3$Ru$_2$O$_7$|Joe Hooper,Zhiqiang Mao,Robin Perry,Yoshiteru Maeno###
(537651, 537651)
 In addition, tunneling spectra are found to change sharply in thelow bias voltage range of V < 2mV near the transition field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 7, 'K', 2],[37.0, 2, 'mV', 0]

V
###Unusual Oscillation in Tunneling Magnetoresistance near a Quantum Critical Point in Sr$_3$Ru$_2$O$_7$|Joe Hooper,Zhiqiang Mao,Robin Perry,Yoshiteru Maeno###
(537685, 537685)
 In addition, tunneling spectra are found to change sharply in thelow bias voltage range of V < 2mV near the transition field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 7, 'K', 2],[3.0, 2, 'mV', 0]

Sr3Ru2O7
###Unusual Oscillation in Tunneling Magnetoresistance near a Quantum Critical Point in Sr$_3$Ru$_2$O$_7$|Joe Hooper,Zhiqiang Mao,Robin Perry,Yoshiteru Maeno###
(537716, 537721)
 Theseobservations reveal that the Fermi surface of Sr3Ru2O7 changes in asurprising way as the system undergoes strong critical fluctuations.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 7, 'K', 3],[28.0, 2, 'mV', 1]

Pr1
###Magneto-transport studies on (Pr1/3Sm2/3)2/3A1/3MnO3 (A = Ca, Sr and Ba) compounds|Saket Asthana,D. Bahadur,A. K. Nigam,S. K. Malik###
(537766, 537767)
Magneto-transport studies on (Pr1/3Sm2/3)2/3A1/3MnO3 (A  Ca, Sr and Ba) compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[274.0, 5, 'K', 7],[277.0, 4, 'Tesla', 7]

Sm2
###Magneto-transport studies on (Pr1/3Sm2/3)2/3A1/3MnO3 (A = Ca, Sr and Ba) compounds|Saket Asthana,D. Bahadur,A. K. Nigam,S. K. Malik###
(537770, 537771)
Magneto-transport studies on (Pr1/3Sm2/3)2/3A1/3MnO3 (A  Ca, Sr and Ba) compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[270.0, 5, 'K', 7],[273.0, 4, 'Tesla', 7]

MnO3
###Magneto-transport studies on (Pr1/3Sm2/3)2/3A1/3MnO3 (A = Ca, Sr and Ba) compounds|Saket Asthana,D. Bahadur,A. K. Nigam,S. K. Malik###
(537782, 537784)
Magneto-transport studies on (Pr1/3Sm2/3)2/3A1/3MnO3 (A  Ca, Sr and Ba) compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[257.0, 5, 'K', 7],[260.0, 4, 'Tesla', 7]

Ca
###Magneto-transport studies on (Pr1/3Sm2/3)2/3A1/3MnO3 (A = Ca, Sr and Ba) compounds|Saket Asthana,D. Bahadur,A. K. Nigam,S. K. Malik###
(537790, 537790)
Magneto-transport studies on (Pr1/3Sm2/3)2/3A1/3MnO3 (A  Ca, Sr and Ba) compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[251.0, 5, 'K', 7],[254.0, 4, 'Tesla', 7]

Sr
###Magneto-transport studies on (Pr1/3Sm2/3)2/3A1/3MnO3 (A = Ca, Sr and Ba) compounds|Saket Asthana,D. Bahadur,A. K. Nigam,S. K. Malik###
(537793, 537793)
Magneto-transport studies on (Pr1/3Sm2/3)2/3A1/3MnO3 (A  Ca, Sr and Ba) compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[248.0, 5, 'K', 7],[251.0, 4, 'Tesla', 7]

Ba
###Magneto-transport studies on (Pr1/3Sm2/3)2/3A1/3MnO3 (A = Ca, Sr and Ba) compounds|Saket Asthana,D. Bahadur,A. K. Nigam,S. K. Malik###
(537797, 537797)
Magneto-transport studies on (Pr1/3Sm2/3)2/3A1/3MnO3 (A  Ca, Sr and Ba) compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[244.0, 5, 'K', 7],[247.0, 4, 'Tesla', 7]

Pr1
###Magneto-transport studies on (Pr1/3Sm2/3)2/3A1/3MnO3 (A = Ca, Sr and Ba) compounds|Saket Asthana,D. Bahadur,A. K. Nigam,S. K. Malik###
(537814, 537815)
 Magnetic and transport properties of (Pr1/3Sm2/3)2/3A1/3MnO3 (A  Ca, Sr andBa) compounds, prepared by the citrate gel route, have been investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[226.0, 5, 'K', 6],[229.0, 4, 'Tesla', 6]

Sm2
###Magneto-transport studies on (Pr1/3Sm2/3)2/3A1/3MnO3 (A = Ca, Sr and Ba) compounds|Saket Asthana,D. Bahadur,A. K. Nigam,S. K. Malik###
(537818, 537819)
 Magnetic and transport properties of (Pr1/3Sm2/3)2/3A1/3MnO3 (A  Ca, Sr andBa) compounds, prepared by the citrate gel route, have been investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[222.0, 5, 'K', 6],[225.0, 4, 'Tesla', 6]

MnO3
###Magneto-transport studies on (Pr1/3Sm2/3)2/3A1/3MnO3 (A = Ca, Sr and Ba) compounds|Saket Asthana,D. Bahadur,A. K. Nigam,S. K. Malik###
(537830, 537832)
 Magnetic and transport properties of (Pr1/3Sm2/3)2/3A1/3MnO3 (A  Ca, Sr andBa) compounds, prepared by the citrate gel route, have been investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[209.0, 5, 'K', 6],[212.0, 4, 'Tesla', 6]

Ca
###Magneto-transport studies on (Pr1/3Sm2/3)2/3A1/3MnO3 (A = Ca, Sr and Ba) compounds|Saket Asthana,D. Bahadur,A. K. Nigam,S. K. Malik###
(537838, 537838)
 Magnetic and transport properties of (Pr1/3Sm2/3)2/3A1/3MnO3 (A  Ca, Sr andBa) compounds, prepared by the citrate gel route, have been investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[203.0, 5, 'K', 6],[206.0, 4, 'Tesla', 6]

Sr
###Magneto-transport studies on (Pr1/3Sm2/3)2/3A1/3MnO3 (A = Ca, Sr and Ba) compounds|Saket Asthana,D. Bahadur,A. K. Nigam,S. K. Malik###
(537841, 537841)
 Magnetic and transport properties of (Pr1/3Sm2/3)2/3A1/3MnO3 (A  Ca, Sr andBa) compounds, prepared by the citrate gel route, have been investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[200.0, 5, 'K', 6],[203.0, 4, 'Tesla', 6]

Ba
###Magneto-transport studies on (Pr1/3Sm2/3)2/3A1/3MnO3 (A = Ca, Sr and Ba) compounds|Saket Asthana,D. Bahadur,A. K. Nigam,S. K. Malik###
(537846, 537846)
 Magnetic and transport properties of (Pr1/3Sm2/3)2/3A1/3MnO3 (A  Ca, Sr andBa) compounds, prepared by the citrate gel route, have been investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[195.0, 5, 'K', 6],[198.0, 4, 'Tesla', 6]

Ca
###Magneto-transport studies on (Pr1/3Sm2/3)2/3A1/3MnO3 (A = Ca, Sr and Ba) compounds|Saket Asthana,D. Bahadur,A. K. Nigam,S. K. Malik###
(537911, 537911)
 Chargeordering transport behavior is indicated only in Ca-substituted compound.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 5, 'K', 4],[133.0, 4, 'Tesla', 4]

Sr
###Magneto-transport studies on (Pr1/3Sm2/3)2/3A1/3MnO3 (A = Ca, Sr and Ba) compounds|Saket Asthana,D. Bahadur,A. K. Nigam,S. K. Malik###
(537921, 537921)
 TheSr- and Ba-substituted compounds show metal-insulator transition andsemiconducting-like behavior, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 5, 'K', 3],[123.0, 4, 'Tesla', 3]

Ba
###Magneto-transport studies on (Pr1/3Sm2/3)2/3A1/3MnO3 (A = Ca, Sr and Ba) compounds|Saket Asthana,D. Bahadur,A. K. Nigam,S. K. Malik###
(537926, 537926)
 TheSr- and Ba-substituted compounds show metal-insulator transition andsemiconducting-like behavior, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 5, 'K', 3],[118.0, 4, 'Tesla', 3]

Ba
###Magneto-transport studies on (Pr1/3Sm2/3)2/3A1/3MnO3 (A = Ca, Sr and Ba) compounds|Saket Asthana,D. Bahadur,A. K. Nigam,S. K. Malik###
(537966, 537966)
 The magnetoresistance is highest inthe Ba substituted compound.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 5, 'K', 2],[78.0, 4, 'Tesla', 2]

C
###Magneto-transport studies on (Pr1/3Sm2/3)2/3A1/3MnO3 (A = Ca, Sr and Ba) compounds|Saket Asthana,D. Bahadur,A. K. Nigam,S. K. Malik###
(538011, 538011)
 All the three samples show irreversibility inmagnetization as a function of temperature in zero-field cooled (Z<missing VAR>FC) and fieldcooled (FC) plots.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 5, 'K', 1],[33.0, 4, 'Tesla', 1]

(FC)
###Magneto-transport studies on (Pr1/3Sm2/3)2/3A1/3MnO3 (A = Ca, Sr and Ba) compounds|Saket Asthana,D. Bahadur,A. K. Nigam,S. K. Malik###
(538021, 538024)
 All the three samples show irreversibility inmagnetization as a function of temperature in zero-field cooled (Z<missing VAR>FC) and fieldcooled (FC) plots.
Featurization successful!
0,0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 5, 'K', 1],[20.0, 4, 'Tesla', 1]

Ca
###Magneto-transport studies on (Pr1/3Sm2/3)2/3A1/3MnO3 (A = Ca, Sr and Ba) compounds|Saket Asthana,D. Bahadur,A. K. Nigam,S. K. Malik###
(538056, 538056)
 The non-saturating magnetization, even at 5K and 4 Teslafield, are observed in Ca as well Ba-substituted compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 5, 'K', 0],[12.0, 4, 'Tesla', 0]

Ba
###Magneto-transport studies on (Pr1/3Sm2/3)2/3A1/3MnO3 (A = Ca, Sr and Ba) compounds|Saket Asthana,D. Bahadur,A. K. Nigam,S. K. Malik###
(538062, 538062)
 The non-saturating magnetization, even at 5K and 4 Teslafield, are observed in Ca as well Ba-substituted compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 5, 'K', 0],[18.0, 4, 'Tesla', 0]

Ba2LaNbO6
###Anomalous bias dependence of tunnel magnetoresistance in a magnetic tunnel junction|Soumik Mukhopadhyay,I. Das,S. P. Pai,P. Raychaudhuri###
(538129, 538134)
 We have fabricated a spin-polarized tunneling device based on half metallicmanganites incorporating Ba2LaNbO6 as insulating barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(CPP)
###Detecting domain wall trapping and motion at a constriction in narrow ferromagnetic wires using perpendicular-current giant magnetoresistance|A. J. Zambano,W. P. Pratt Jr###
(538420, 538424)
 We present a versatile method for detecting the presence and motion of atrapped domain wall in a narrow ferromagnetic layer usingcurrent-perpendicular-to-plane (CPP) giant magnetoresistance (MR).
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[182.0, 295, 'K', 3]

CPP
###Detecting domain wall trapping and motion at a constriction in narrow ferromagnetic wires using perpendicular-current giant magnetoresistance|A. J. Zambano,W. P. Pratt Jr###
(538438, 538440)
 The CPP-MRresponse to small motions of the trapped domain wall is enhanced because theCPP current is restricted to the region of wall trapping.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 295, 'K', 2]

CPP
###Detecting domain wall trapping and motion at a constriction in narrow ferromagnetic wires using perpendicular-current giant magnetoresistance|A. J. Zambano,W. P. Pratt Jr###
(538473, 538475)
 The CPP-MRresponse to small motions of the trapped domain wall is enhanced because theCPP current is restricted to the region of wall trapping.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 295, 'K', 2]

Cu
###Detecting domain wall trapping and motion at a constriction in narrow ferromagnetic wires using perpendicular-current giant magnetoresistance|A. J. Zambano,W. P. Pratt Jr###
(538505, 538505)
 We use aPermalloy/Cu/Permalloy spin valve in the shape of a long, 500-nm-wide wirewith a constriction (notch) near its middle that acts as a trapping site for ahead-to-head domain wall.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 295, 'K', 1]

K
###Detecting domain wall trapping and motion at a constriction in narrow ferromagnetic wires using perpendicular-current giant magnetoresistance|A. J. Zambano,W. P. Pratt Jr###
(538599, 538599)
 Two different notch shapes were studied, mostly at4.2 K but also at 295K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 295, 'K', 0]

Ca3Ru2O7
###Orbitally-driven Behavior: Mott Transition, Quantum Oscillations and Colossal Magnetoresistance in Bilayered Ca3Ru2O7|G. Cao,X. N. Lin,L. Balicas,S. Chikara,J. E. Crow,P. Schlottmann###
(538642, 538647)
Orbitally-driven Behavior Mott Transition, Quantum Oscillations and Colossal Magnetoresistance in Bilayered Ca3Ru2O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 30, 'T', 1]

Ca3Ru2O7
###Orbitally-driven Behavior: Mott Transition, Quantum Oscillations and Colossal Magnetoresistance in Bilayered Ca3Ru2O7|G. Cao,X. N. Lin,L. Balicas,S. Chikara,J. E. Crow,P. Schlottmann###
(538687, 538692)
 We report recent transport and thermodynamic experiments over a wide range oftemperatures for the Mott-like system Ca3Ru2O7 at high magnetic fields, B, upto 30 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 30, 'T', 0]

B
###Orbitally-driven Behavior: Mott Transition, Quantum Oscillations and Colossal Magnetoresistance in Bilayered Ca3Ru2O7|G. Cao,X. N. Lin,L. Balicas,S. Chikara,J. E. Crow,P. Schlottmann###
(538703, 538703)
 We report recent transport and thermodynamic experiments over a wide range oftemperatures for the Mott-like system Ca3Ru2O7 at high magnetic fields, B, upto 30 T.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 30, 'T', 0]

B
###Orbitally-driven Behavior: Mott Transition, Quantum Oscillations and Colossal Magnetoresistance in Bilayered Ca3Ru2O7|G. Cao,X. N. Lin,L. Balicas,S. Chikara,J. E. Crow,P. Schlottmann###
(538739, 538739)
 This work reveals a rich and highly anisotropic phase diagram, whereapplying B along the a-, b<missing VAR>-, and c<missing VAR>-axis leads to vastly different behavior.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 30, 'T', 1]

B
###Orbitally-driven Behavior: Mott Transition, Quantum Oscillations and Colossal Magnetoresistance in Bilayered Ca3Ru2O7|G. Cao,X. N. Lin,L. Balicas,S. Chikara,J. E. Crow,P. Schlottmann###
(538800, 538800)
 Afully spin-polarized state via a first order metamagnetic transition isobtained for Ba, and colossal magnetoresistance is seen for Bb<missing VAR>, and quantumoscillations in the resistivity are observed for Bc<missing VAR>, respectively.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 30, 'T', 2]

B
###Orbitally-driven Behavior: Mott Transition, Quantum Oscillations and Colossal Magnetoresistance in Bilayered Ca3Ru2O7|G. Cao,X. N. Lin,L. Balicas,S. Chikara,J. E. Crow,P. Schlottmann###
(538816, 538816)
 Afully spin-polarized state via a first order metamagnetic transition isobtained for Ba, and colossal magnetoresistance is seen for Bb<missing VAR>, and quantumoscillations in the resistivity are observed for Bc<missing VAR>, respectively.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 30, 'T', 2]

B
###Orbitally-driven Behavior: Mott Transition, Quantum Oscillations and Colossal Magnetoresistance in Bilayered Ca3Ru2O7|G. Cao,X. N. Lin,L. Balicas,S. Chikara,J. E. Crow,P. Schlottmann###
(538839, 538839)
 Afully spin-polarized state via a first order metamagnetic transition isobtained for Ba, and colossal magnetoresistance is seen for Bb<missing VAR>, and quantumoscillations in the resistivity are observed for Bc<missing VAR>, respectively.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 30, 'T', 2]

Ce
###Origin of the anomalous low temperature upturn in resistivity in the electron-doped cuprates|Y. Dagan,A. Biswas,M. C. Barr,W. M. Fisher,R. L. Greene###
(539211, 539211)
 The temperature, doping and field dependences of the magnetoresistance (MR)in Pr(2-x)Ce(x)CuO(4-delta) films are reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 0, ',', 2]

Pr0.85Ca0.15MnO3
###Tailoring of ferromagnetic Pr0.85Ca0.15MnO3/ferroelectric Ba0.6Sr0.4TiO3 superlattices for multiferroic properties|P. Murugavel,D. Saurel,W. Prellier,Ch. Simon,B. Raveau###
(539624, 539630)
Tailoring of ferromagnetic Pr0.85Ca0.15MnO3/ferroelectric Ba0.6Sr0.4TiO3 superlattices for multiferroic properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.03,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16999999999999998,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[231.0, 80, 'K', 5]

Ba0.6Sr0.4TiO3
###Tailoring of ferromagnetic Pr0.85Ca0.15MnO3/ferroelectric Ba0.6Sr0.4TiO3 superlattices for multiferroic properties|P. Murugavel,D. Saurel,W. Prellier,Ch. Simon,B. Raveau###
(539634, 539640)
Tailoring of ferromagnetic Pr0.85Ca0.15MnO3/ferroelectric Ba0.6Sr0.4TiO3 superlattices for multiferroic properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.12,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[221.0, 80, 'K', 5]

Pr0.85Ca0.15MnO3
###Tailoring of ferromagnetic Pr0.85Ca0.15MnO3/ferroelectric Ba0.6Sr0.4TiO3 superlattices for multiferroic properties|P. Murugavel,D. Saurel,W. Prellier,Ch. Simon,B. Raveau###
(539659, 539665)
 Superlattices composed of ferromagnetic Pr0.85Ca0.15MnO3 and ferroelectricBa0.6Sr0.4TiO3 layers were fabricated on (100) SrTiO3 substrates by apulsed-laser deposition method.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.03,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16999999999999998,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[196.0, 80, 'K', 4]

Ba0.6Sr0.4TiO3
###Tailoring of ferromagnetic Pr0.85Ca0.15MnO3/ferroelectric Ba0.6Sr0.4TiO3 superlattices for multiferroic properties|P. Murugavel,D. Saurel,W. Prellier,Ch. Simon,B. Raveau###
(539672, 539678)
 Superlattices composed of ferromagnetic Pr0.85Ca0.15MnO3 and ferroelectricBa0.6Sr0.4TiO3 layers were fabricated on (100) SrTiO3 substrates by apulsed-laser deposition method.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.12,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[183.0, 80, 'K', 4]

SrTiO3
###Tailoring of ferromagnetic Pr0.85Ca0.15MnO3/ferroelectric Ba0.6Sr0.4TiO3 superlattices for multiferroic properties|P. Murugavel,D. Saurel,W. Prellier,Ch. Simon,B. Raveau###
(539692, 539695)
 Superlattices composed of ferromagnetic Pr0.85Ca0.15MnO3 and ferroelectricBa0.6Sr0.4TiO3 layers were fabricated on (100) SrTiO3 substrates by apulsed-laser deposition method.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 80, 'K', 4]

C
###Microwave photoresponse in the 2D electron system caused by intra-Landau level transitions|S. I. Dorozhkin,J. H. Smet,V. Umansky,K. von Klitzing###
(539960, 539960)
 The influence of microwave radiation on the D<missing VAR>C-magnetoresistance of2D<missing VAR>-electrons is studied in the regime beyond the recently discovered zeroresistance states when the cyclotron frequency exceeds the radiation frequency.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 2, 'D', 1],[58.0, 30, 'GHz', 1]

Ga
###Effect of Ga$^{+}$ irradiation on magnetic and magnetotransport properties in (Ga,Mn)As epilayers|H. Kato,K. Hamaya,Y. Kitamoto,T. Taniyama,H. Munekata###
(540633, 540633)
Effect of Ga irradiation on magnetic and magnetotransport properties in (Ga,Mn)As epilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 4, 'K', 3]

Ga
###Effect of Ga$^{+}$ irradiation on magnetic and magnetotransport properties in (Ga,Mn)As epilayers|H. Kato,K. Hamaya,Y. Kitamoto,T. Taniyama,H. Munekata###
(540650, 540650)
Effect of Ga irradiation on magnetic and magnetotransport properties in (Ga,Mn)As epilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 4, 'K', 3]

Mn
###Effect of Ga$^{+}$ irradiation on magnetic and magnetotransport properties in (Ga,Mn)As epilayers|H. Kato,K. Hamaya,Y. Kitamoto,T. Taniyama,H. Munekata###
(540652, 540652)
Effect of Ga irradiation on magnetic and magnetotransport properties in (Ga,Mn)As epilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 4, 'K', 3]

As
###Effect of Ga$^{+}$ irradiation on magnetic and magnetotransport properties in (Ga,Mn)As epilayers|H. Kato,K. Hamaya,Y. Kitamoto,T. Taniyama,H. Munekata###
(540654, 540654)
Effect of Ga irradiation on magnetic and magnetotransport properties in (Ga,Mn)As epilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 4, 'K', 3]

Ga
###Effect of Ga$^{+}$ irradiation on magnetic and magnetotransport properties in (Ga,Mn)As epilayers|H. Kato,K. Hamaya,Y. Kitamoto,T. Taniyama,H. Munekata###
(540683, 540683)
 We report on the magnetic and magnetotransport properties of ferromagneticsemiconductor (Ga,Mn)As modified by Ga ion irradiation using focused ionbeam.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 4, 'K', 2]

Mn
###Effect of Ga$^{+}$ irradiation on magnetic and magnetotransport properties in (Ga,Mn)As epilayers|H. Kato,K. Hamaya,Y. Kitamoto,T. Taniyama,H. Munekata###
(540685, 540685)
 We report on the magnetic and magnetotransport properties of ferromagneticsemiconductor (Ga,Mn)As modified by Ga ion irradiation using focused ionbeam.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 4, 'K', 2]

As
###Effect of Ga$^{+}$ irradiation on magnetic and magnetotransport properties in (Ga,Mn)As epilayers|H. Kato,K. Hamaya,Y. Kitamoto,T. Taniyama,H. Munekata###
(540687, 540687)
 We report on the magnetic and magnetotransport properties of ferromagneticsemiconductor (Ga,Mn)As modified by Ga ion irradiation using focused ionbeam.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 4, 'K', 2]

Ga
###Effect of Ga$^{+}$ irradiation on magnetic and magnetotransport properties in (Ga,Mn)As epilayers|H. Kato,K. Hamaya,Y. Kitamoto,T. Taniyama,H. Munekata###
(540693, 540693)
 We report on the magnetic and magnetotransport properties of ferromagneticsemiconductor (Ga,Mn)As modified by Ga ion irradiation using focused ionbeam.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 4, 'K', 2]

Ni
###Tunnel magnetoresistance of polymeric chains|Kamil Walczak###
(540904, 540904)
 Coherent spin-dependent electronic transport is investigated in a molecularjunction made of polymeric chain attached to ferromagnetic electrodes (Ni andCo, respectively).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Tunnel magnetoresistance of polymeric chains|Kamil Walczak###
(540909, 540909)
 Coherent spin-dependent electronic transport is investigated in a molecularjunction made of polymeric chain attached to ferromagnetic electrodes (Ni andCo, respectively).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Electronic transport through a quantum dot network|August Dorn,Thomas Ihn,Klaus Ensslin,Werner Wegscheider,Max Bichler###
(541143, 541143)
 As the coupling is reduced, the system undergoes atransition from the antidot regime to the tight binding limit, where Coulombresonances with on average increasing charging energies are observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(I)
###Magnetic tunnel junctions with impurities|F. Kanjouri,N. Ryzhanova,B. Dieny,N. Strelkov,A. Vedyayev###
(541347, 541349)
 The influence of impurities, embedded into the isolating spacer (I) betweentwo ferromagnetic electrodes (F), on the I-V curve and tunnel magnetoresistance(TMR), is theoretically investigated.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(F)
###Magnetic tunnel junctions with impurities|F. Kanjouri,N. Ryzhanova,B. Dieny,N. Strelkov,A. Vedyayev###
(541360, 541362)
 The influence of impurities, embedded into the isolating spacer (I) betweentwo ferromagnetic electrodes (F), on the I-V curve and tunnel magnetoresistance(TMR), is theoretically investigated.
Featurization successful!
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Magnetic tunnel junctions with impurities|F. Kanjouri,N. Ryzhanova,B. Dieny,N. Strelkov,A. Vedyayev###
(541369, 541369)
 The influence of impurities, embedded into the isolating spacer (I) betweentwo ferromagnetic electrodes (F), on the I-V curve and tunnel magnetoresistance(TMR), is theoretically investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Magnetic tunnel junctions with impurities|F. Kanjouri,N. Ryzhanova,B. Dieny,N. Strelkov,A. Vedyayev###
(541371, 541371)
 The influence of impurities, embedded into the isolating spacer (I) betweentwo ferromagnetic electrodes (F), on the I-V curve and tunnel magnetoresistance(TMR), is theoretically investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F/I
###Magnetic tunnel junctions with impurities|F. Kanjouri,N. Ryzhanova,B. Dieny,N. Strelkov,A. Vedyayev###
(541521, 541523)
closer to the one of the interfaces F/I the I-V curve exhibits quasidiodebehavior.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

I
###Magnetic tunnel junctions with impurities|F. Kanjouri,N. Ryzhanova,B. Dieny,N. Strelkov,A. Vedyayev###
(541527, 541527)
closer to the one of the interfaces F/I the I-V curve exhibits quasidiodebehavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Magnetic tunnel junctions with impurities|F. Kanjouri,N. Ryzhanova,B. Dieny,N. Strelkov,A. Vedyayev###
(541529, 541529)
closer to the one of the interfaces F/I the I-V curve exhibits quasidiodebehavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr2FeMoO6
###An Interesting Magnetoresistive System: Sr2FeMoO6|Sugata Ray,D. D. Sarma###
(541557, 541562)
An Interesting Magnetoresistive System Sr2FeMoO6.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BBO6
###An Interesting Magnetoresistive System: Sr2FeMoO6|Sugata Ray,D. D. Sarma###
(541584, 541587)
 Ordered double perovskite oxides of the general formula, A2BBO6, have beenknown for several decades to have interesting electronic and magneticproperties.
Featurization terminated normally.
0,0,0,0,0.25,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr2FeMoO6
###An Interesting Magnetoresistive System: Sr2FeMoO6|Sugata Ray,D. D. Sarma###
(541658, 541663)
 However, a recent report of a spectacular negativemagnetoresistance effect in a specific member of this family, namely Sr2FeMoO6,has brought this class of compounds under intense scrutiny.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###An Interesting Magnetoresistive System: Sr2FeMoO6|Sugata Ray,D. D. Sarma###
(541686, 541686)
 In this smallreview, we present few theoretical and experimental results, describing mainlythe effects of Fe/Mo antisite defects on the properties of this compound andalso briefly discuss few other puzzling facts about this fascinating compound<missing PERIOD>
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/Mo
###An Interesting Magnetoresistive System: Sr2FeMoO6|Sugata Ray,D. D. Sarma###
(541722, 541724)
 In this smallreview, we present few theoretical and experimental results, describing mainlythe effects of Fe/Mo antisite defects on the properties of this compound andalso briefly discuss few other puzzling facts about this fascinating compound<missing PERIOD>
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Co/Pt
###Antisymmetric magnetoresistance in magnetic multilayers with perpendicular anisotropy|X. M. Cheng,S. Urazhdin,O. Tchernyshyov,C. L. Chien,V. I. Nikitenko,A. J. Shapiro,R. D. Shull###
(542064, 542066)
 While magnetoresistance (MR) has generally been found to be symmetric inapplied field in non-magnetic or magnetic metals, we have observedantisymmetric MR in Co/Pt multilayers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

As
###Antisymmetric magnetoresistance in magnetic multilayers with perpendicular anisotropy|X. M. Cheng,S. Urazhdin,O. Tchernyshyov,C. L. Chien,V. I. Nikitenko,A. J. Shapiro,R. D. Shull###
(542156, 542156)
 As a result, the extraordinary Hall effect (EHE) gives rise tocirculating currents in the vicinity of the domain walls that contributes tothe MR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Diode effect in magnetic tunnel junctions|F. Kanjouri,N. Ryzhanova,B. Dieny,N. Strelkov,A. Vedyaev###
(542277, 542277)
 The influence on the I-V characteristics and tunnel magnetoresistance (TMR),of impurities embedded into the insulating barrier I separating the twoferromagnetic electrodes F of a magnetic tunnel junction, was theoreticallyinvestigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Diode effect in magnetic tunnel junctions|F. Kanjouri,N. Ryzhanova,B. Dieny,N. Strelkov,A. Vedyaev###
(542279, 542279)
 The influence on the I-V characteristics and tunnel magnetoresistance (TMR),of impurities embedded into the insulating barrier I separating the twoferromagnetic electrodes F of a magnetic tunnel junction, was theoreticallyinvestigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Diode effect in magnetic tunnel junctions|F. Kanjouri,N. Ryzhanova,B. Dieny,N. Strelkov,A. Vedyaev###
(542311, 542311)
 The influence on the I-V characteristics and tunnel magnetoresistance (TMR),of impurities embedded into the insulating barrier I separating the twoferromagnetic electrodes F of a magnetic tunnel junction, was theoreticallyinvestigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Diode effect in magnetic tunnel junctions|F. Kanjouri,N. Ryzhanova,B. Dieny,N. Strelkov,A. Vedyaev###
(542324, 542324)
 The influence on the I-V characteristics and tunnel magnetoresistance (TMR),of impurities embedded into the insulating barrier I separating the twoferromagnetic electrodes F of a magnetic tunnel junction, was theoreticallyinvestigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F/I
###Diode effect in magnetic tunnel junctions|F. Kanjouri,N. Ryzhanova,B. Dieny,N. Strelkov,A. Vedyaev###
(542464, 542466)
 closer to one of the interfacesF/I, the I-V characteristic exhibits a quasidiode behavior.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

I
###Diode effect in magnetic tunnel junctions|F. Kanjouri,N. Ryzhanova,B. Dieny,N. Strelkov,A. Vedyaev###
(542471, 542471)
 closer to one of the interfacesF/I, the I-V characteristic exhibits a quasidiode behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Diode effect in magnetic tunnel junctions|F. Kanjouri,N. Ryzhanova,B. Dieny,N. Strelkov,A. Vedyaev###
(542473, 542473)
 closer to one of the interfacesF/I, the I-V characteristic exhibits a quasidiode behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Hysteretic resistance spikes in quantum Hall ferromagnets without domains|Henrique J. P. Freire,J. Carlos Egues###
(542586, 542586)
 We use spin-density-functional theory to study recently reported hystereticmagnetoresistance rhoxx spikes in Mn-based 2D electron gases[Jaroszyn<missing VAR>ski et al.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 2, 'D', 0]

U
###Spin dependent transport of ``nonmagnetic metal/zigzag nanotube encapsulating magnetic atoms/nonmagnetic metal'' junctions|Satoshi Kokado,Kikuo Harigaya###
(542935, 542935)
 When the on-site Coulomb energy divided by themagnitude of transfer integral, U/t<missing VAR>, is larger than 0.8, large MR effectdue to the direction of spins of magnetic atoms, which has the magnitude of theMR ratio of about 100%, appears reflecting such spin-polarized edges.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 0.8, ',', 0],[63.0, 100, '%', 0]

B
###Ballistic anisotropic magnetoresistance|J. Velev,R. F. Sabirianov,S. S. Jaswal,E. Y. Tsymbal###
(543058, 543058)
 Electronic transport in ferromagnetic ballistic conductors is predicted toexhibit ballistic anisotropic magnetoresistance (BAMR) - a change in theballistic conductance with the direction of magnetization.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Ballistic anisotropic magnetoresistance|J. Velev,R. F. Sabirianov,S. S. Jaswal,E. Y. Tsymbal###
(543202, 543202)
 We illustrate the significanceof this phenomenon by performing ab-initio calculations of the ballisticconductance in ferromagnetic Ni and Fe nanowires which display a sizable BAMRwhen the magnetization changes direction from parallel to perpendicular to thewire axis.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Ballistic anisotropic magnetoresistance|J. Velev,R. F. Sabirianov,S. S. Jaswal,E. Y. Tsymbal###
(543206, 543206)
 We illustrate the significanceof this phenomenon by performing ab-initio calculations of the ballisticconductance in ferromagnetic Ni and Fe nanowires which display a sizable BAMRwhen the magnetization changes direction from parallel to perpendicular to thewire axis.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Ballistic anisotropic magnetoresistance|J. Velev,R. F. Sabirianov,S. S. Jaswal,E. Y. Tsymbal###
(543218, 543218)
 We illustrate the significanceof this phenomenon by performing ab-initio calculations of the ballisticconductance in ferromagnetic Ni and Fe nanowires which display a sizable BAMRwhen the magnetization changes direction from parallel to perpendicular to thewire axis.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni2
###Large negative magnetoresistance in a ferromagnetic shape memory alloy : Ni_{2+x}Mn_{1-x}Ga|C. Biswas,R. Rawat,S. R. Barman###
(543279, 543280)
Large negative magnetoresistance in a ferromagnetic shape memory alloy  Ni2x<missing VAR>Mn1-xGa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 5, '%', 1]

Mn1-xGa
###Large negative magnetoresistance in a ferromagnetic shape memory alloy : Ni_{2+x}Mn_{1-x}Ga|C. Biswas,R. Rawat,S. R. Barman###
(543282, 543286)
Large negative magnetoresistance in a ferromagnetic shape memory alloy  Ni2x<missing VAR>Mn1-xGa.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[3.0, 5, '%', 1]

Ni2
###Large negative magnetoresistance in a ferromagnetic shape memory alloy : Ni_{2+x}Mn_{1-x}Ga|C. Biswas,R. Rawat,S. R. Barman###
(543318, 543319)
 5% negative magnetoresistance (MR) at room temperature has been observed inbulk Ni2x<missing VAR>Mn1-xGa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 5, '%', 0]

Mn1-xGa
###Large negative magnetoresistance in a ferromagnetic shape memory alloy : Ni_{2+x}Mn_{1-x}Ga|C. Biswas,R. Rawat,S. R. Barman###
(543321, 543325)
 5% negative magnetoresistance (MR) at room temperature has been observed inbulk Ni2x<missing VAR>Mn1-xGa.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[32.0, 5, '%', 0]

Ni2
###Large negative magnetoresistance in a ferromagnetic shape memory alloy : Ni_{2+x}Mn_{1-x}Ga|C. Biswas,R. Rawat,S. R. Barman###
(543341, 543342)
 This indicates the possibility of usingNi2x<missing VAR>Mn1-xGa as magnetic sensors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 5, '%', 1]

Mn1-xGa
###Large negative magnetoresistance in a ferromagnetic shape memory alloy : Ni_{2+x}Mn_{1-x}Ga|C. Biswas,R. Rawat,S. R. Barman###
(543344, 543348)
 This indicates the possibility of usingNi2x<missing VAR>Mn1-xGa as magnetic sensors.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[55.0, 5, '%', 1]

In
###Large negative magnetoresistance in a ferromagnetic shape memory alloy : Ni_{2+x}Mn_{1-x}Ga|C. Biswas,R. Rawat,S. R. Barman###
(543511, 543511)
 In theaustenitic phase, which does not have twin structure, MR agrees with theorybased on s-d scattering model.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[222.0, 5, '%', 6]

CrAs
###Tunable spin transport in CrAs: role of correlation effects|L. Chioncel,M. I. Katsnelson,G. A. de Wijs,R. A. de Groot,A. I. Lichtenstein###
(543573, 543574)
Tunable spin transport in CrAs role of correlation effects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CrAs
###Tunable spin transport in CrAs: role of correlation effects|L. Chioncel,M. I. Katsnelson,G. A. de Wijs,R. A. de Groot,A. I. Lichtenstein###
(543603, 543604)
 Correlation effects on the electronic structure of half-metallic CrAs inzinc-blende structure are studied for different substrate lattice constants.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

InAs
###Tunable spin transport in CrAs: role of correlation effects|L. Chioncel,M. I. Katsnelson,G. A. de Wijs,R. A. de Groot,A. I. Lichtenstein###
(543680, 543681)
Depending on the substrate the spectral weight of the non-quasiparticle statesmight be tuned from a well developed value in the case of InAs substrate to analmost negligible contribution for the GaAs one.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Tunable spin transport in CrAs: role of correlation effects|L. Chioncel,M. I. Katsnelson,G. A. de Wijs,R. A. de Groot,A. I. Lichtenstein###
(543700, 543701)
Depending on the substrate the spectral weight of the non-quasiparticle statesmight be tuned from a well developed value in the case of InAs substrate to analmost negligible contribution for the GaAs one.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F/S/F
###Spin transport and magnetoresistance in F/S/F spin valves|Jan Petter Morten,Arne Brataas,Wolfgang Belzig###
(543821, 543825)
Spin transport and magnetoresistance in F/S/F spin valves.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

In
###Spin transport and magnetoresistance in F/S/F spin valves|Jan Petter Morten,Arne Brataas,Wolfgang Belzig###
(543930, 543930)
 Inferromagnet-superconductor-ferromagnet systems made of Co and Al, interfaceresistances can be small compared to bulk resistances.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Spin transport and magnetoresistance in F/S/F spin valves|Jan Petter Morten,Arne Brataas,Wolfgang Belzig###
(543945, 543945)
 Inferromagnet-superconductor-ferromagnet systems made of Co and Al, interfaceresistances can be small compared to bulk resistances.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Al
###Spin transport and magnetoresistance in F/S/F spin valves|Jan Petter Morten,Arne Brataas,Wolfgang Belzig###
(543949, 543949)
 Inferromagnet-superconductor-ferromagnet systems made of Co and Al, interfaceresistances can be small compared to bulk resistances.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co/Al/Co
###Spin transport and magnetoresistance in F/S/F spin valves|Jan Petter Morten,Arne Brataas,Wolfgang Belzig###
(543987, 543991)
 This simplifies thedescription of transport in Co/Al/Co spin valves, for which we numericallycalculate the temperature and Al length dependence of the magnetoresistance.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Al
###Spin transport and magnetoresistance in F/S/F spin valves|Jan Petter Morten,Arne Brataas,Wolfgang Belzig###
(544015, 544015)
 This simplifies thedescription of transport in Co/Al/Co spin valves, for which we numericallycalculate the temperature and Al length dependence of the magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Al
###Spin-Polarized Electron Transport through Nanometer-Scale Al Grains|L. Y. Zhang,C. Y. Wang,Y. G. Wei,X. Y. Liu,D. Davidovic###
(544050, 544050)
Spin-Polarized Electron Transport through Nanometer-Scale Al Grains.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 4.2, 'K', 1]

Al
###Spin-Polarized Electron Transport through Nanometer-Scale Al Grains|L. Y. Zhang,C. Y. Wang,Y. G. Wei,X. Y. Liu,D. Davidovic###
(544078, 544078)
 We investigate spin-polarized electron tunnelling through ensembles ofnanometer scale Al grains embedded between two Co-reservoirs at 4.2K, andobserve tunnelling-magnetoresistance (TMR) and effects from spin-precession inthe perpendicular applied magnetic field (the Hanle effect).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 4.2, 'K', 0]

Co
###Spin-Polarized Electron Transport through Nanometer-Scale Al Grains|L. Y. Zhang,C. Y. Wang,Y. G. Wei,X. Y. Liu,D. Davidovic###
(544088, 544088)
 We investigate spin-polarized electron tunnelling through ensembles ofnanometer scale Al grains embedded between two Co-reservoirs at 4.2K, andobserve tunnelling-magnetoresistance (TMR) and effects from spin-precession inthe perpendicular applied magnetic field (the Hanle effect).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 4.2, 'K', 0]

Al
###Spin-Polarized Electron Transport through Nanometer-Scale Al Grains|L. Y. Zhang,C. Y. Wang,Y. G. Wei,X. Y. Liu,D. Davidovic###
(544255, 544255)
 The asymmetric TMR is explained by spin relaxation in Al grainsand asymmetric electron dwell times.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 4.2, 'K', 4]

S
###Variable range cotunneling and conductivity of a granular metal|M. V. Feigel'man,A. S. Ioselevich###
(544439, 544439)
 Thecorresponding E<missing VAR>-S temperature TES in the latter case is slightly(logarithmically) T<missing VAR>-dependent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Variable range cotunneling and conductivity of a granular metal|M. V. Feigel'man,A. S. Ioselevich###
(544445, 544445)
 Thecorresponding E<missing VAR>-S temperature TES in the latter case is slightly(logarithmically) T<missing VAR>-dependent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###The role of ferroelectric-ferromagnetic layers on the properties of superlattice-based multiferroics|P. Murugavel,M. P. Singh,W. Prellier,B. Mercey,Ch. Simon,B. Raveau###
(544620, 544623)
 A series of superlattices and trilayers composed of ferromagnetic andferroelectric or paraelectric layers were grown on (100) SrTiO3 by the pulsedlaser deposition technique.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pr0.85Ca0.15MnO3
###The role of ferroelectric-ferromagnetic layers on the properties of superlattice-based multiferroics|P. Murugavel,M. P. Singh,W. Prellier,B. Mercey,Ch. Simon,B. Raveau###
(544667, 544673)
 The superlattices made of ferromagnetic Pr0.85Ca0.15MnO3 (PCM<missing VAR>O)and a ferroelectric, namely Ba0.6Sr0.4TiO3 (BST) or BaTiO3, showed enhancedmagnetoresistance (MR) at high applied magnetic field, whereas such enhancementwas absent in Pr0.85Ca0.15MnO3/SrTiO3 superlattices, which clearly demonstratesthe preponderant role of the ferroelectric layers in this enhanced MR.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.03,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16999999999999998,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PC
###The role of ferroelectric-ferromagnetic layers on the properties of superlattice-based multiferroics|P. Murugavel,M. P. Singh,W. Prellier,B. Mercey,Ch. Simon,B. Raveau###
(544676, 544677)
 The superlattices made of ferromagnetic Pr0.85Ca0.15MnO3 (PCM<missing VAR>O)and a ferroelectric, namely Ba0.6Sr0.4TiO3 (BST) or BaTiO3, showed enhancedmagnetoresistance (MR) at high applied magnetic field, whereas such enhancementwas absent in Pr0.85Ca0.15MnO3/SrTiO3 superlattices, which clearly demonstratesthe preponderant role of the ferroelectric layers in this enhanced MR.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###The role of ferroelectric-ferromagnetic layers on the properties of superlattice-based multiferroics|P. Murugavel,M. P. Singh,W. Prellier,B. Mercey,Ch. Simon,B. Raveau###
(544679, 544679)
 The superlattices made of ferromagnetic Pr0.85Ca0.15MnO3 (PCM<missing VAR>O)and a ferroelectric, namely Ba0.6Sr0.4TiO3 (BST) or BaTiO3, showed enhancedmagnetoresistance (MR) at high applied magnetic field, whereas such enhancementwas absent in Pr0.85Ca0.15MnO3/SrTiO3 superlattices, which clearly demonstratesthe preponderant role of the ferroelectric layers in this enhanced MR.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ba0.6Sr0.4TiO3
###The role of ferroelectric-ferromagnetic layers on the properties of superlattice-based multiferroics|P. Murugavel,M. P. Singh,W. Prellier,B. Mercey,Ch. Simon,B. Raveau###
(544692, 544698)
 The superlattices made of ferromagnetic Pr0.85Ca0.15MnO3 (PCM<missing VAR>O)and a ferroelectric, namely Ba0.6Sr0.4TiO3 (BST) or BaTiO3, showed enhancedmagnetoresistance (MR) at high applied magnetic field, whereas such enhancementwas absent in Pr0.85Ca0.15MnO3/SrTiO3 superlattices, which clearly demonstratesthe preponderant role of the ferroelectric layers in this enhanced MR.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.12,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BS
###The role of ferroelectric-ferromagnetic layers on the properties of superlattice-based multiferroics|P. Murugavel,M. P. Singh,W. Prellier,B. Mercey,Ch. Simon,B. Raveau###
(544701, 544702)
 The superlattices made of ferromagnetic Pr0.85Ca0.15MnO3 (PCM<missing VAR>O)and a ferroelectric, namely Ba0.6Sr0.4TiO3 (BST) or BaTiO3, showed enhancedmagnetoresistance (MR) at high applied magnetic field, whereas such enhancementwas absent in Pr0.85Ca0.15MnO3/SrTiO3 superlattices, which clearly demonstratesthe preponderant role of the ferroelectric layers in this enhanced MR.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BaTiO3
###The role of ferroelectric-ferromagnetic layers on the properties of superlattice-based multiferroics|P. Murugavel,M. P. Singh,W. Prellier,B. Mercey,Ch. Simon,B. Raveau###
(544708, 544711)
 The superlattices made of ferromagnetic Pr0.85Ca0.15MnO3 (PCM<missing VAR>O)and a ferroelectric, namely Ba0.6Sr0.4TiO3 (BST) or BaTiO3, showed enhancedmagnetoresistance (MR) at high applied magnetic field, whereas such enhancementwas absent in Pr0.85Ca0.15MnO3/SrTiO3 superlattices, which clearly demonstratesthe preponderant role of the ferroelectric layers in this enhanced MR.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pr0.85Ca0.15MnO3/SrTiO3
###The role of ferroelectric-ferromagnetic layers on the properties of superlattice-based multiferroics|P. Murugavel,M. P. Singh,W. Prellier,B. Mercey,Ch. Simon,B. Raveau###
(544750, 544761)
 The superlattices made of ferromagnetic Pr0.85Ca0.15MnO3 (PCM<missing VAR>O)and a ferroelectric, namely Ba0.6Sr0.4TiO3 (BST) or BaTiO3, showed enhancedmagnetoresistance (MR) at high applied magnetic field, whereas such enhancementwas absent in Pr0.85Ca0.15MnO3/SrTiO3 superlattices, which clearly demonstratesthe preponderant role of the ferroelectric layers in this enhanced MR.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

PC
###The role of ferroelectric-ferromagnetic layers on the properties of superlattice-based multiferroics|P. Murugavel,M. P. Singh,W. Prellier,B. Mercey,Ch. Simon,B. Raveau###
(544818, 544819)
Furthermore, the absence of enhanced MR in trilayers of PCM<missing VAR>O/BST<missing VAR> indicates thatthe magneto-electric coupling which is responsible for MR in these systems isstronger in multilayers than in their trilayer counterparts.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O/BS
###The role of ferroelectric-ferromagnetic layers on the properties of superlattice-based multiferroics|P. Murugavel,M. P. Singh,W. Prellier,B. Mercey,Ch. Simon,B. Raveau###
(544821, 544824)
Furthermore, the absence of enhanced MR in trilayers of PCM<missing VAR>O/BST<missing VAR> indicates thatthe magneto-electric coupling which is responsible for MR in these systems isstronger in multilayers than in their trilayer counterparts.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

CoFeB/MgO/CoFeB
###Dependence of Giant Tunnel Magnetoresistance of Sputtered CoFeB/MgO/CoFeB Magnetic Tunnel Junctions on MgO Barrier Thickness and Annealing Temperatur|Jun Hayakawa,Shoji Ikeda,Fumihiro Matsukura,Hiromasa Takahashi,Hideo Ohno###
(544899, 544908)
Dependence of Giant Tunnel Magnetoresistance of Sputtered CoFeB/MgO/CoFeB Magnetic Tunnel Junctions on MgO Barrier Thickness and Annealing Temperatur.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[188.0, 375, 'C', 3],[270.0, 260, '%', 4],[281.0, 403, '%', 4],[285.0, 5, 'K', 4]

MgO
###Dependence of Giant Tunnel Magnetoresistance of Sputtered CoFeB/MgO/CoFeB Magnetic Tunnel Junctions on MgO Barrier Thickness and Annealing Temperatur|Jun Hayakawa,Shoji Ikeda,Fumihiro Matsukura,Hiromasa Takahashi,Hideo Ohno###
(544918, 544919)
Dependence of Giant Tunnel Magnetoresistance of Sputtered CoFeB/MgO/CoFeB Magnetic Tunnel Junctions on MgO Barrier Thickness and Annealing Temperatur.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[177.0, 375, 'C', 3],[259.0, 260, '%', 4],[270.0, 403, '%', 4],[274.0, 5, 'K', 4]

MgO
###Dependence of Giant Tunnel Magnetoresistance of Sputtered CoFeB/MgO/CoFeB Magnetic Tunnel Junctions on MgO Barrier Thickness and Annealing Temperatur|Jun Hayakawa,Shoji Ikeda,Fumihiro Matsukura,Hiromasa Takahashi,Hideo Ohno###
(544965, 544966)
 We investigated the dependence of giant tunnel magnetoresistance (TMR) on thethickness of an MgO barrier and on the annealing temperature of sputteredCoFeB/MgO/CoFeB magnetic tunnel junctions deposited on SiO2/Si wafers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 375, 'C', 2],[212.0, 260, '%', 3],[223.0, 403, '%', 3],[227.0, 5, 'K', 3]

CoFeB/MgO/CoFeB
###Dependence of Giant Tunnel Magnetoresistance of Sputtered CoFeB/MgO/CoFeB Magnetic Tunnel Junctions on MgO Barrier Thickness and Annealing Temperatur|Jun Hayakawa,Shoji Ikeda,Fumihiro Matsukura,Hiromasa Takahashi,Hideo Ohno###
(544985, 544994)
 We investigated the dependence of giant tunnel magnetoresistance (TMR) on thethickness of an MgO barrier and on the annealing temperature of sputteredCoFeB/MgO/CoFeB magnetic tunnel junctions deposited on SiO2/Si wafers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[102.0, 375, 'C', 2],[184.0, 260, '%', 3],[195.0, 403, '%', 3],[199.0, 5, 'K', 3]

SiO2/Si
###Dependence of Giant Tunnel Magnetoresistance of Sputtered CoFeB/MgO/CoFeB Magnetic Tunnel Junctions on MgO Barrier Thickness and Annealing Temperatur|Jun Hayakawa,Shoji Ikeda,Fumihiro Matsukura,Hiromasa Takahashi,Hideo Ohno###
(545006, 545010)
 We investigated the dependence of giant tunnel magnetoresistance (TMR) on thethickness of an MgO barrier and on the annealing temperature of sputteredCoFeB/MgO/CoFeB magnetic tunnel junctions deposited on SiO2/Si wafers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[86.0, 375, 'C', 2],[168.0, 260, '%', 3],[179.0, 403, '%', 3],[183.0, 5, 'K', 3]

MgO
###Dependence of Giant Tunnel Magnetoresistance of Sputtered CoFeB/MgO/CoFeB Magnetic Tunnel Junctions on MgO Barrier Thickness and Annealing Temperatur|Jun Hayakawa,Shoji Ikeda,Fumihiro Matsukura,Hiromasa Takahashi,Hideo Ohno###
(545030, 545031)
 Theresistance-area product exponentially increases with MgO thickness, indicatingthat the quality of MgO barriers is high in the investigated thickness range of1.15-2.4 nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 375, 'C', 1],[147.0, 260, '%', 2],[158.0, 403, '%', 2],[162.0, 5, 'K', 2]

MgO
###Dependence of Giant Tunnel Magnetoresistance of Sputtered CoFeB/MgO/CoFeB Magnetic Tunnel Junctions on MgO Barrier Thickness and Annealing Temperatur|Jun Hayakawa,Shoji Ikeda,Fumihiro Matsukura,Hiromasa Takahashi,Hideo Ohno###
(545047, 545048)
 Theresistance-area product exponentially increases with MgO thickness, indicatingthat the quality of MgO barriers is high in the investigated thickness range of1.15-2.4 nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 375, 'C', 1],[130.0, 260, '%', 2],[141.0, 403, '%', 2],[145.0, 5, 'K', 2]

CoFeB/MgO/CoFeB
###Dependence of Giant Tunnel Magnetoresistance of Sputtered CoFeB/MgO/CoFeB Magnetic Tunnel Junctions on MgO Barrier Thickness and Annealing Temperatur|Jun Hayakawa,Shoji Ikeda,Fumihiro Matsukura,Hiromasa Takahashi,Hideo Ohno###
(545110, 545119)
 High-resolution transmission electron microscope images show thatannealing at 375 C results in the formation of crystalline CoFeB/MgO/CoFeBstructures, even though CoFeB electrodes are amorphous in the as-sputteredstate.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[14.0, 375, 'C', 0],[59.0, 260, '%', 1],[70.0, 403, '%', 1],[74.0, 5, 'K', 1]

CoFeB
###Dependence of Giant Tunnel Magnetoresistance of Sputtered CoFeB/MgO/CoFeB Magnetic Tunnel Junctions on MgO Barrier Thickness and Annealing Temperatur|Jun Hayakawa,Shoji Ikeda,Fumihiro Matsukura,Hiromasa Takahashi,Hideo Ohno###
(545129, 545131)
 High-resolution transmission electron microscope images show thatannealing at 375 C results in the formation of crystalline CoFeB/MgO/CoFeBstructures, even though CoFeB electrodes are amorphous in the as-sputteredstate.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 375, 'C', 0],[47.0, 260, '%', 1],[58.0, 403, '%', 1],[62.0, 5, 'K', 1]

La1-yPr
###Current oscillation and low-field colossal magnetoresistance effect in phase-separated manganites|M. Tokunaga,H. Song,Y. Tokunaga,T. Tamegai###
(545261, 545265)
 Current-induced switching from metallic to insulating state is observed inphase-separated states of (La1-yPry)0.7Ca0.3MnO3 (y<missing VAR>0.7) andNd0.5Ca0.5Mn1-zCrz<missing VAR>O3 (z<missing VAR>0.03) crystals.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

Ca0.3MnO3
###Current oscillation and low-field colossal magnetoresistance effect in phase-separated manganites|M. Tokunaga,H. Song,Y. Tokunaga,T. Tamegai###
(545269, 545273)
 Current-induced switching from metallic to insulating state is observed inphase-separated states of (La1-yPry)0.7Ca0.3MnO3 (y<missing VAR>0.7) andNd0.5Ca0.5Mn1-zCrz<missing VAR>O3 (z<missing VAR>0.03) crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6976744186046512,0,0,0,0,0,0,0,0,0,0,0,0.06976744186046512,0,0,0,0,0.23255813953488372,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nd0.5Ca0.5Mn1-zCr
###Current oscillation and low-field colossal magnetoresistance effect in phase-separated manganites|M. Tokunaga,H. Song,Y. Tokunaga,T. Tamegai###
(545283, 545291)
 Current-induced switching from metallic to insulating state is observed inphase-separated states of (La1-yPry)0.7Ca0.3MnO3 (y<missing VAR>0.7) andNd0.5Ca0.5Mn1-zCrz<missing VAR>O3 (z<missing VAR>0.03) crystals.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

O3
###Current oscillation and low-field colossal magnetoresistance effect in phase-separated manganites|M. Tokunaga,H. Song,Y. Tokunaga,T. Tamegai###
(545293, 545294)
 Current-induced switching from metallic to insulating state is observed inphase-separated states of (La1-yPry)0.7Ca0.3MnO3 (y<missing VAR>0.7) andNd0.5Ca0.5Mn1-zCrz<missing VAR>O3 (z<missing VAR>0.03) crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(H)
###Current oscillation and low-field colossal magnetoresistance effect in phase-separated manganites|M. Tokunaga,H. Song,Y. Tokunaga,T. Tamegai###
(545342, 545344)
 Application of magneticfields to this current-induced insulating state causes pronounced low-fieldnegative magnetoresistance effect [r<missing VAR>(H)/r<missing VAR>(0)10-3 at H1k<missing VAR>Oe].
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H1
###Current oscillation and low-field colossal magnetoresistance effect in phase-separated manganites|M. Tokunaga,H. Song,Y. Tokunaga,T. Tamegai###
(545356, 545357)
 Application of magneticfields to this current-induced insulating state causes pronounced low-fieldnegative magnetoresistance effect [r<missing VAR>(H)/r<missing VAR>(0)10-3 at H1k<missing VAR>Oe].
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Current oscillation and low-field colossal magnetoresistance effect in phase-separated manganites|M. Tokunaga,H. Song,Y. Tokunaga,T. Tamegai###
(545396, 545396)
 At voltages higher than this threshold value, oscillations in currentsare observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrCo1-x
###The impact of niobium doping upon the magnetotransport properties of the oxygen-deficient perovskite SrCo1-xNbxO3-d|T. Motohashi,V. Caignaert,V. Pralong,M. Hervieu,A. Maignan,B. Raveau###
(545747, 545751)
The impact of niobium doping upon the magnetotransport properties of the oxygen-deficient perovskite SrCo1-xNbxO3-d.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[153.0, 30, '%', 3],[157.0, 5, 'K', 3],[160.0, 7, 'T', 3]

O3-d
###The impact of niobium doping upon the magnetotransport properties of the oxygen-deficient perovskite SrCo1-xNbxO3-d|T. Motohashi,V. Caignaert,V. Pralong,M. Hervieu,A. Maignan,B. Raveau###
(545753, 545756)
The impact of niobium doping upon the magnetotransport properties of the oxygen-deficient perovskite SrCo1-xNbxO3-d.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[148.0, 30, '%', 3],[152.0, 5, 'K', 3],[155.0, 7, 'T', 3]

SrCo1-x
###The impact of niobium doping upon the magnetotransport properties of the oxygen-deficient perovskite SrCo1-xNbxO3-d|T. Motohashi,V. Caignaert,V. Pralong,M. Hervieu,A. Maignan,B. Raveau###
(545769, 545773)
 The oxygen-deficient perovskite cobaltite SrCo1-xNbxO3-d was synthesized bydirect solid-state reaction and its magnetotransport properties wereinvestigated.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[131.0, 30, '%', 2],[135.0, 5, 'K', 2],[138.0, 7, 'T', 2]

O3-d
###The impact of niobium doping upon the magnetotransport properties of the oxygen-deficient perovskite SrCo1-xNbxO3-d|T. Motohashi,V. Caignaert,V. Pralong,M. Hervieu,A. Maignan,B. Raveau###
(545775, 545778)
 The oxygen-deficient perovskite cobaltite SrCo1-xNbxO3-d was synthesized bydirect solid-state reaction and its magnetotransport properties wereinvestigated.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[126.0, 30, '%', 2],[130.0, 5, 'K', 2],[133.0, 7, 'T', 2]

Tm
###The impact of niobium doping upon the magnetotransport properties of the oxygen-deficient perovskite SrCo1-xNbxO3-d|T. Motohashi,V. Caignaert,V. Pralong,M. Hervieu,A. Maignan,B. Raveau###
(545832, 545832)
 This cobaltite exhibits an unusual ferromagnetic behavior with atransition temperature Tm  130-150 K and a spin glass like behavior below Tm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 30, '%', 1],[76.0, 5, 'K', 1],[79.0, 7, 'T', 1]

K
###The impact of niobium doping upon the magnetotransport properties of the oxygen-deficient perovskite SrCo1-xNbxO3-d|T. Motohashi,V. Caignaert,V. Pralong,M. Hervieu,A. Maignan,B. Raveau###
(545839, 545839)
 This cobaltite exhibits an unusual ferromagnetic behavior with atransition temperature Tm  130-150 K and a spin glass like behavior below Tm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 30, '%', 1],[69.0, 5, 'K', 1],[72.0, 7, 'T', 1]

Tm
###The impact of niobium doping upon the magnetotransport properties of the oxygen-deficient perovskite SrCo1-xNbxO3-d|T. Motohashi,V. Caignaert,V. Pralong,M. Hervieu,A. Maignan,B. Raveau###
(545855, 545855)
 This cobaltite exhibits an unusual ferromagnetic behavior with atransition temperature Tm  130-150 K and a spin glass like behavior below Tm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 30, '%', 1],[53.0, 5, 'K', 1],[56.0, 7, 'T', 1]

H
###The impact of niobium doping upon the magnetotransport properties of the oxygen-deficient perovskite SrCo1-xNbxO3-d|T. Motohashi,V. Caignaert,V. Pralong,M. Hervieu,A. Maignan,B. Raveau###
(545889, 545889)
Importantly, this phase reaches a large magnetoresistance (MR) value, MR  -(r<missing VAR>H- r<missing VAR>0) / r<missing VAR>0  30% at 5 K in 7 T.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 30, '%', 0],[19.0, 5, 'K', 0],[22.0, 7, 'T', 0]

Nb
###The impact of niobium doping upon the magnetotransport properties of the oxygen-deficient perovskite SrCo1-xNbxO3-d|T. Motohashi,V. Caignaert,V. Pralong,M. Hervieu,A. Maignan,B. Raveau###
(545950, 545950)
 The large MR effect is believed to be relatedto the disordered magnetic state induced by the Nb-for-Co substitution.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 30, '%', 1],[42.0, 5, 'K', 1],[39.0, 7, 'T', 1]

Co
###The impact of niobium doping upon the magnetotransport properties of the oxygen-deficient perovskite SrCo1-xNbxO3-d|T. Motohashi,V. Caignaert,V. Pralong,M. Hervieu,A. Maignan,B. Raveau###
(545954, 545954)
 The large MR effect is believed to be relatedto the disordered magnetic state induced by the Nb-for-Co substitution.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 30, '%', 1],[46.0, 5, 'K', 1],[43.0, 7, 'T', 1]

S1
###New possibility of the ground state of quarter-filled one-dimensional strongly correlated electronic system interacting with localized spins|Chisa Hotta,Masao Ogata,Hidetoshi Fukuyama###
(546319, 546320)
 We study numerically the ground state properties of the one-dimensionalquarter-filled strongly correlated electronic system interactingantiferromagnetically with localized S1/2 spins.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Simultaneous electric and magnetic field induced nonvolatile memory|M. Quintero,A. G. Leyva,P. Levy###
(546675, 546675)
 In the temperaturerange in which low magnetic field determines the phase coexistence fraction,both effects, though related to different mechanisms, are found to determinemultilevel nonvolatile memory capabilities simultaneously.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 20, 'K', 1]

YBCO
###Spin-polarized quasiparticle injection effects in YBCO thin films|S. Soltan,J. Albrecht,H. -U. Habermeier###
(546762, 546765)
Spin-polarized quasiparticle injection effects in YBCO thin films.
Featurization terminated normally.
0,0,0,0,0.25,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La2
###Spin-polarized quasiparticle injection effects in YBCO thin films|S. Soltan,J. Albrecht,H. -U. Habermeier###
(546807, 546808)
 Epitaxial heterostructures of half-metal colossalmagnetoresistive La2/3Ca1/3MnO3 (HM<missing VAR>-CMR) and high Tc superconducting YBa2Cu3O7(YBCO) are grown on SrTiO3 (100) single crystal substrates by pulsed laserdeposition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ca1
###Spin-polarized quasiparticle injection effects in YBCO thin films|S. Soltan,J. Albrecht,H. -U. Habermeier###
(546811, 546812)
 Epitaxial heterostructures of half-metal colossalmagnetoresistive La2/3Ca1/3MnO3 (HM<missing VAR>-CMR) and high Tc superconducting YBa2Cu3O7(YBCO) are grown on SrTiO3 (100) single crystal substrates by pulsed laserdeposition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnO3
###Spin-polarized quasiparticle injection effects in YBCO thin films|S. Soltan,J. Albrecht,H. -U. Habermeier###
(546815, 546817)
 Epitaxial heterostructures of half-metal colossalmagnetoresistive La2/3Ca1/3MnO3 (HM<missing VAR>-CMR) and high Tc superconducting YBa2Cu3O7(YBCO) are grown on SrTiO3 (100) single crystal substrates by pulsed laserdeposition.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Spin-polarized quasiparticle injection effects in YBCO thin films|S. Soltan,J. Albrecht,H. -U. Habermeier###
(546820, 546820)
 Epitaxial heterostructures of half-metal colossalmagnetoresistive La2/3Ca1/3MnO3 (HM<missing VAR>-CMR) and high Tc superconducting YBa2Cu3O7(YBCO) are grown on SrTiO3 (100) single crystal substrates by pulsed laserdeposition.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Spin-polarized quasiparticle injection effects in YBCO thin films|S. Soltan,J. Albrecht,H. -U. Habermeier###
(546823, 546823)
 Epitaxial heterostructures of half-metal colossalmagnetoresistive La2/3Ca1/3MnO3 (HM<missing VAR>-CMR) and high Tc superconducting YBa2Cu3O7(YBCO) are grown on SrTiO3 (100) single crystal substrates by pulsed laserdeposition.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###Spin-polarized quasiparticle injection effects in YBCO thin films|S. Soltan,J. Albrecht,H. -U. Habermeier###
(546832, 546832)
 Epitaxial heterostructures of half-metal colossalmagnetoresistive La2/3Ca1/3MnO3 (HM<missing VAR>-CMR) and high Tc superconducting YBa2Cu3O7(YBCO) are grown on SrTiO3 (100) single crystal substrates by pulsed laserdeposition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YBa2Cu3O7
###Spin-polarized quasiparticle injection effects in YBCO thin films|S. Soltan,J. Albrecht,H. -U. Habermeier###
(546836, 546842)
 Epitaxial heterostructures of half-metal colossalmagnetoresistive La2/3Ca1/3MnO3 (HM<missing VAR>-CMR) and high Tc superconducting YBa2Cu3O7(YBCO) are grown on SrTiO3 (100) single crystal substrates by pulsed laserdeposition.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5384615384615384,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23076923076923078,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15384615384615385,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(YBCO)
###Spin-polarized quasiparticle injection effects in YBCO thin films|S. Soltan,J. Albrecht,H. -U. Habermeier###
(546845, 546850)
 Epitaxial heterostructures of half-metal colossalmagnetoresistive La2/3Ca1/3MnO3 (HM<missing VAR>-CMR) and high Tc superconducting YBa2Cu3O7(YBCO) are grown on SrTiO3 (100) single crystal substrates by pulsed laserdeposition.
Featurization successful!
0,0,0,0,0.25,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Spin-polarized quasiparticle injection effects in YBCO thin films|S. Soltan,J. Albrecht,H. -U. Habermeier###
(546858, 546861)
 Epitaxial heterostructures of half-metal colossalmagnetoresistive La2/3Ca1/3MnO3 (HM<missing VAR>-CMR) and high Tc superconducting YBa2Cu3O7(YBCO) are grown on SrTiO3 (100) single crystal substrates by pulsed laserdeposition.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Spin-polarized quasiparticle injection effects in YBCO thin films|S. Soltan,J. Albrecht,H. -U. Habermeier###
(546887, 546887)
 Using the HM<missing VAR>--CMR layer as source for spin-polarizedquasiparticles, we show the effect of injection of spin-polarizedquasiparticles into the ab-plane and along the c<missing VAR>-axis of YBCO.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Spin-polarized quasiparticle injection effects in YBCO thin films|S. Soltan,J. Albrecht,H. -U. Habermeier###
(546891, 546891)
 Using the HM<missing VAR>--CMR layer as source for spin-polarizedquasiparticles, we show the effect of injection of spin-polarizedquasiparticles into the ab-plane and along the c<missing VAR>-axis of YBCO.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YBCO
###Spin-polarized quasiparticle injection effects in YBCO thin films|S. Soltan,J. Albrecht,H. -U. Habermeier###
(546952, 546955)
 Using the HM<missing VAR>--CMR layer as source for spin-polarizedquasiparticles, we show the effect of injection of spin-polarizedquasiparticles into the ab-plane and along the c<missing VAR>-axis of YBCO.
Featurization terminated normally.
0,0,0,0,0.25,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/MgO/Fe
###Effect of interface states on spin-dependent tunneling in Fe/MgO/Fe tunnel junctions|K. D. Belashchenko,J. Velev,E. Y. Tsymbal###
(547055, 547060)
Effect of interface states on spin-dependent tunneling in Fe/MgO/Fe tunnel junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Fe/MgO
###Effect of interface states on spin-dependent tunneling in Fe/MgO/Fe tunnel junctions|K. D. Belashchenko,J. Velev,E. Y. Tsymbal###
(547086, 547089)
 The electronic structure and spin-dependent tunneling in epitaxialFe/MgO/Fe(001) tunnel junctions are studied using first-principlescalculations.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

MgO
###Effect of interface states on spin-dependent tunneling in Fe/MgO/Fe tunnel junctions|K. D. Belashchenko,J. Velev,E. Y. Tsymbal###
(547118, 547119)
 For small MgO barrier thickness the minority-spin resonant bandsat the two interfaces make a significant contribution to the tunnelingconductance for the antiparallel magnetization, whereas these bands are, inpractice, mismatched by disorder and/or small applied bias for the parallelmagnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Effect of interface states on spin-dependent tunneling in Fe/MgO/Fe tunnel junctions|K. D. Belashchenko,J. Velev,E. Y. Tsymbal###
(547240, 547241)
 This explains the experimentally observed decrease in tunnelingmagnetoresistance (TMR) for thin MgO barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ag
###Effect of interface states on spin-dependent tunneling in Fe/MgO/Fe tunnel junctions|K. D. Belashchenko,J. Velev,E. Y. Tsymbal###
(547259, 547259)
 We predict that a monolayer ofAg epitaxially deposited at the interface between Fe and MgO suppressestunneling through the interface band and may thus be used to enhance the TMRfor thin barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Effect of interface states on spin-dependent tunneling in Fe/MgO/Fe tunnel junctions|K. D. Belashchenko,J. Velev,E. Y. Tsymbal###
(547273, 547273)
 We predict that a monolayer ofAg epitaxially deposited at the interface between Fe and MgO suppressestunneling through the interface band and may thus be used to enhance the TMRfor thin barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Effect of interface states on spin-dependent tunneling in Fe/MgO/Fe tunnel junctions|K. D. Belashchenko,J. Velev,E. Y. Tsymbal###
(547277, 547278)
 We predict that a monolayer ofAg epitaxially deposited at the interface between Fe and MgO suppressestunneling through the interface band and may thus be used to enhance the TMRfor thin barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

U
###Cotunneling through a quantum dot coupled to ferromagnetic leads with noncollinear magnetizations|I. Weymann,J. Barnas###
(547434, 547434)
 The system is described by the impurity AndersonHamiltonian with arbitrary Coulomb correlation parameter U.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(La0.25Pr0.75)0.7Ca0.3MnO3
###Metal-insulator transition in manganites: mixture of oxygen isotopes versus magnetic field|A. Taldenkov,N. Babushkina,A. Inyushkin,O. Nikolaeva,O. Gorbenko,A. Kaul###
(547677, 547688)
 We have investigated the effect of oxygen isotope substitution on themetal-insulator transition temperature and the resistivity of the narrow bandmanganite (La0.25Pr0.75)0.7Ca0.3MnO3 in a constant magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.034999999999999996,0,0.10499999999999998,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 16, 'O', 1],[33.0, 17, 'O', 1],[36.0, 18, 'O', 1],[50.0, 16.0, 'to', 1],[51.0, 17.8, 'a', 1],[138.0, -2, 'T', 4]

In
###Magnetic scattering of spin polarized carriers in (In,Mn)Sb dilute magnetic semiconductor|M. Csontos,T. Wojtowicz,X. Liu,M. Dobrowolska B. Jankó,J. K. Furdyna,G. Mihály###
(547878, 547878)
Magnetic scattering of spin polarized carriers in (In,Mn)Sb dilute magnetic semiconductor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Magnetic scattering of spin polarized carriers in (In,Mn)Sb dilute magnetic semiconductor|M. Csontos,T. Wojtowicz,X. Liu,M. Dobrowolska B. Jankó,J. K. Furdyna,G. Mihály###
(547880, 547880)
Magnetic scattering of spin polarized carriers in (In,Mn)Sb dilute magnetic semiconductor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sb
###Magnetic scattering of spin polarized carriers in (In,Mn)Sb dilute magnetic semiconductor|M. Csontos,T. Wojtowicz,X. Liu,M. Dobrowolska B. Jankó,J. K. Furdyna,G. Mihály###
(547882, 547882)
Magnetic scattering of spin polarized carriers in (In,Mn)Sb dilute magnetic semiconductor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magnetic scattering of spin polarized carriers in (In,Mn)Sb dilute magnetic semiconductor|M. Csontos,T. Wojtowicz,X. Liu,M. Dobrowolska B. Jankó,J. K. Furdyna,G. Mihály###
(547904, 547904)
 Magnetoresistance measurements on the magnetic semiconductor (In,Mn)Sbsuggest that magnetic scattering in this material is dominated by isolatedMn2 ions located outside the ferromagnetically-ordered regions when thesystem is below Tc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Magnetic scattering of spin polarized carriers in (In,Mn)Sb dilute magnetic semiconductor|M. Csontos,T. Wojtowicz,X. Liu,M. Dobrowolska B. Jankó,J. K. Furdyna,G. Mihály###
(547906, 547906)
 Magnetoresistance measurements on the magnetic semiconductor (In,Mn)Sbsuggest that magnetic scattering in this material is dominated by isolatedMn2 ions located outside the ferromagnetically-ordered regions when thesystem is below Tc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sb
###Magnetic scattering of spin polarized carriers in (In,Mn)Sb dilute magnetic semiconductor|M. Csontos,T. Wojtowicz,X. Liu,M. Dobrowolska B. Jankó,J. K. Furdyna,G. Mihály###
(547908, 547908)
 Magnetoresistance measurements on the magnetic semiconductor (In,Mn)Sbsuggest that magnetic scattering in this material is dominated by isolatedMn2 ions located outside the ferromagnetically-ordered regions when thesystem is below Tc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn2
###Magnetic scattering of spin polarized carriers in (In,Mn)Sb dilute magnetic semiconductor|M. Csontos,T. Wojtowicz,X. Liu,M. Dobrowolska B. Jankó,J. K. Furdyna,G. Mihály###
(547934, 547935)
 Magnetoresistance measurements on the magnetic semiconductor (In,Mn)Sbsuggest that magnetic scattering in this material is dominated by isolatedMn2 ions located outside the ferromagnetically-ordered regions when thesystem is below Tc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn2
###Magnetic scattering of spin polarized carriers in (In,Mn)Sb dilute magnetic semiconductor|M. Csontos,T. Wojtowicz,X. Liu,M. Dobrowolska B. Jankó,J. K. Furdyna,G. Mihály###
(548002, 548003)
 A model is proposed, based on the p-d exchangebetween spin-polarized charge carriers and localized Mn2 ions, whichaccounts for the observed behavior both below and above the ferromagnetic phasetransition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Al
###Al-Substitution Effects on Physical Properties of the Colossal Magnetoresistance Compouns La0.67ca0.33mno3|I. G. Deac,L. Giurgiu,A. Darabont,R. V. Tetean,M. Miron,E. Burzo###
(548099, 548099)
Al-Substitution Effects on Physical Properties of the Colossal Magnetoresistance Compouns La0.67ca0.33mno3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 0, ',', 1],[70.0, 0.1, ',', 1],[73.0, 0.15, ',', 1]

La0.67
###Al-Substitution Effects on Physical Properties of the Colossal Magnetoresistance Compouns La0.67ca0.33mno3|I. G. Deac,L. Giurgiu,A. Darabont,R. V. Tetean,M. Miron,E. Burzo###
(548121, 548122)
Al-Substitution Effects on Physical Properties of the Colossal Magnetoresistance Compouns La0.67ca0.33mno3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 0, ',', 1],[47.0, 0.1, ',', 1],[50.0, 0.15, ',', 1]

La0.67Ca0.33
###Al-Substitution Effects on Physical Properties of the Colossal Magnetoresistance Compouns La0.67ca0.33mno3|I. G. Deac,L. Giurgiu,A. Darabont,R. V. Tetean,M. Miron,E. Burzo###
(548150, 548153)
 We present a detailed study of the polycrystalline perovskite manganitesLa0.67Ca0.33AlxMn1-xO3 (x<missing VAR>  0, 0.1, 0.15, 0.5) at low temperatures and highmagnetic fields, including electrical resistance, magnetization, acsusceptibility.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.33,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.67,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 0, ',', 0],[16.0, 0.1, ',', 0],[19.0, 0.15, ',', 0]

Mn1-xO3
###Al-Substitution Effects on Physical Properties of the Colossal Magnetoresistance Compouns La0.67ca0.33mno3|I. G. Deac,L. Giurgiu,A. Darabont,R. V. Tetean,M. Miron,E. Burzo###
(548155, 548160)
 We present a detailed study of the polycrystalline perovskite manganitesLa0.67Ca0.33AlxMn1-xO3 (x<missing VAR>  0, 0.1, 0.15, 0.5) at low temperatures and highmagnetic fields, including electrical resistance, magnetization, acsusceptibility.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[6.0, 0, ',', 0],[9.0, 0.1, ',', 0],[12.0, 0.15, ',', 0]

K
###Al-Substitution Effects on Physical Properties of the Colossal Magnetoresistance Compouns La0.67ca0.33mno3|I. G. Deac,L. Giurgiu,A. Darabont,R. V. Tetean,M. Miron,E. Burzo###
(548231, 548231)
 The static magnetic susceptibility was also measured up to 1000K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 0, ',', 1],[62.0, 0.1, ',', 1],[59.0, 0.15, ',', 1]

Al
###Al-Substitution Effects on Physical Properties of the Colossal Magnetoresistance Compouns La0.67ca0.33mno3|I. G. Deac,L. Giurgiu,A. Darabont,R. V. Tetean,M. Miron,E. Burzo###
(548261, 548261)
 All the samples show colossal magnetoresistance behavior and the Curietemperatures decrease with Al doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 0, ',', 2],[92.0, 0.1, ',', 2],[89.0, 0.15, ',', 2]

Al
###Al-Substitution Effects on Physical Properties of the Colossal Magnetoresistance Compouns La0.67ca0.33mno3|I. G. Deac,L. Giurgiu,A. Darabont,R. V. Tetean,M. Miron,E. Burzo###
(548334, 548334)
 This appearsto be a consequence of the structural and magnetic disorder created by therandom distribution of Al atoms.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[168.0, 0, ',', 4],[165.0, 0.1, ',', 4],[162.0, 0.15, ',', 4]

B
###Magnetic field asymmetry of nonlinear transport in carbon nanotubes|J. Wei,M. Shimogawa,Z. Wang,I. Radu,R. Dormaier,D. H. Cobden###
(548401, 548401)
 We demonstrate that nonlinear transport through a two-terminal nanoscalesample is not symmetric in magnetic field B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Magnetic field asymmetry of nonlinear transport in carbon nanotubes|J. Wei,M. Shimogawa,Z. Wang,I. Radu,R. Dormaier,D. H. Cobden###
(548422, 548422)
 More specifically, we havemeasured the lowest order B-asymmetric terms in single-walled carbon nanotubes.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Magnetic field asymmetry of nonlinear transport in carbon nanotubes|J. Wei,M. Shimogawa,Z. Wang,I. Radu,R. Dormaier,D. H. Cobden###
(548513, 548513)
Consistent with theory, we find that at high temperatures the B-linear term issmall and has a constant sign independent of Fermi energy, while at lowtemperatures it develops mesoscopic fluctuations.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Non-linear effects and Joule heating in I-V curves in manganites|Silvana Mercone,Raymond Fresard,Vincent Caignaert,Christine Martin,Damien Saurel,Charles Simon,Gilles Andre,Philippe Monod,Francois Fauth###
(548613, 548613)
Non-linear effects and Joule heating in I-V curves in manganites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Non-linear effects and Joule heating in I-V curves in manganites|Silvana Mercone,Raymond Fresard,Vincent Caignaert,Christine Martin,Damien Saurel,Charles Simon,Gilles Andre,Philippe Monod,Francois Fauth###
(548615, 548615)
Non-linear effects and Joule heating in I-V curves in manganites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Non-linear effects and Joule heating in I-V curves in manganites|Silvana Mercone,Raymond Fresard,Vincent Caignaert,Christine Martin,Damien Saurel,Charles Simon,Gilles Andre,Philippe Monod,Francois Fauth###
(548657, 548657)
 We study the influence of the Joule effect on the non-linear behavior of thetransport I-V curves in polycrystalline samples of the manganite Pr0.8Ca0.2MnO3by using the crystalline unit cell parameters as an internal thermometer inX<missing VAR>-ray and neutron diffraction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Non-linear effects and Joule heating in I-V curves in manganites|Silvana Mercone,Raymond Fresard,Vincent Caignaert,Christine Martin,Damien Saurel,Charles Simon,Gilles Andre,Philippe Monod,Francois Fauth###
(548659, 548659)
 We study the influence of the Joule effect on the non-linear behavior of thetransport I-V curves in polycrystalline samples of the manganite Pr0.8Ca0.2MnO3by using the crystalline unit cell parameters as an internal thermometer inX<missing VAR>-ray and neutron diffraction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pr0.8Ca0.2MnO3
###Non-linear effects and Joule heating in I-V curves in manganites|Silvana Mercone,Raymond Fresard,Vincent Caignaert,Christine Martin,Damien Saurel,Charles Simon,Gilles Andre,Philippe Monod,Francois Fauth###
(548675, 548681)
 We study the influence of the Joule effect on the non-linear behavior of thetransport I-V curves in polycrystalline samples of the manganite Pr0.8Ca0.2MnO3by using the crystalline unit cell parameters as an internal thermometer inX<missing VAR>-ray and neutron diffraction.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.04,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Non-linear effects and Joule heating in I-V curves in manganites|Silvana Mercone,Raymond Fresard,Vincent Caignaert,Christine Martin,Damien Saurel,Charles Simon,Gilles Andre,Philippe Monod,Francois Fauth###
(548829, 548829)
 Under the actual experimentalconditions we show that the internal temperature gradient or the differencebetween the temperature of the sample and that of the thermal bath are at theorigin of the non-linearity observed in the I-V curves.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Non-linear effects and Joule heating in I-V curves in manganites|Silvana Mercone,Raymond Fresard,Vincent Caignaert,Christine Martin,Damien Saurel,Charles Simon,Gilles Andre,Philippe Monod,Francois Fauth###
(548831, 548831)
 Under the actual experimentalconditions we show that the internal temperature gradient or the differencebetween the temperature of the sample and that of the thermal bath are at theorigin of the non-linearity observed in the I-V curves.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Angular magnetoresistance oscillations in bilayers in tilted magnetic fields|Victor M. Yakovenko,Benjamin K. Cooper###
(548895, 548895)
 Angular magnetoresistance oscillations (AMRO) were originally discovered inorganic conductors and then found in many other layered metals.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Angular magnetoresistance oscillations in bilayers in tilted magnetic fields|Victor M. Yakovenko,Benjamin K. Cooper###
(548944, 548944)
 It should bepossible to observe AMRO to semiconducting bilayers as well.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Angular magnetoresistance oscillations in bilayers in tilted magnetic fields|Victor M. Yakovenko,Benjamin K. Cooper###
(548977, 548977)
 Here we present anintuitive geometrical interpretation of AMRO as the Aharonov-Bohm interferenceeffect, both in real and momentum spaces, for balanced and imbalanced bilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Angular magnetoresistance oscillations in bilayers in tilted magnetic fields|Victor M. Yakovenko,Benjamin K. Cooper###
(549061, 549061)
 We speculate that AMRO may be also observed wheneach layer of the bilayer is in the composite-fermion state.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ti1-x
###A ferromagnetic oxide semiconductor as spin injection electrode in magnetic tunnel junction|H. Toyosaki,T. Fukumura,K. Ueno,M. Nakano,M. Kawasaki###
(549153, 549156)
 A magnetic tunnel junctions composed of room temperature ferromagneticsemiconductor rutile Ti1-xCoxO2-d and ferromagnetic metal Fe0.1Co0.9 separatedby AlOx barrier showed positive tunneling magnetoresistance (TMR) with a ratioof 11 % at 15 K, indicating that Ti1-xCoxO2-d can be used as a spin injectionelectrode.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[56.0, 15, 'K', 0]

O2-d
###A ferromagnetic oxide semiconductor as spin injection electrode in magnetic tunnel junction|H. Toyosaki,T. Fukumura,K. Ueno,M. Nakano,M. Kawasaki###
(549158, 549161)
 A magnetic tunnel junctions composed of room temperature ferromagneticsemiconductor rutile Ti1-xCoxO2-d and ferromagnetic metal Fe0.1Co0.9 separatedby AlOx barrier showed positive tunneling magnetoresistance (TMR) with a ratioof 11 % at 15 K, indicating that Ti1-xCoxO2-d can be used as a spin injectionelectrode.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[51.0, 15, 'K', 0]

Fe0.1Co0.9
###A ferromagnetic oxide semiconductor as spin injection electrode in magnetic tunnel junction|H. Toyosaki,T. Fukumura,K. Ueno,M. Nakano,M. Kawasaki###
(549169, 549172)
 A magnetic tunnel junctions composed of room temperature ferromagneticsemiconductor rutile Ti1-xCoxO2-d and ferromagnetic metal Fe0.1Co0.9 separatedby AlOx barrier showed positive tunneling magnetoresistance (TMR) with a ratioof 11 % at 15 K, indicating that Ti1-xCoxO2-d can be used as a spin injectionelectrode.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0.9,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 15, 'K', 0]

Al
###A ferromagnetic oxide semiconductor as spin injection electrode in magnetic tunnel junction|H. Toyosaki,T. Fukumura,K. Ueno,M. Nakano,M. Kawasaki###
(549179, 549179)
 A magnetic tunnel junctions composed of room temperature ferromagneticsemiconductor rutile Ti1-xCoxO2-d and ferromagnetic metal Fe0.1Co0.9 separatedby AlOx barrier showed positive tunneling magnetoresistance (TMR) with a ratioof 11 % at 15 K, indicating that Ti1-xCoxO2-d can be used as a spin injectionelectrode.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 15, 'K', 0]

Ti1-x
###A ferromagnetic oxide semiconductor as spin injection electrode in magnetic tunnel junction|H. Toyosaki,T. Fukumura,K. Ueno,M. Nakano,M. Kawasaki###
(549219, 549222)
 A magnetic tunnel junctions composed of room temperature ferromagneticsemiconductor rutile Ti1-xCoxO2-d and ferromagnetic metal Fe0.1Co0.9 separatedby AlOx barrier showed positive tunneling magnetoresistance (TMR) with a ratioof 11 % at 15 K, indicating that Ti1-xCoxO2-d can be used as a spin injectionelectrode.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[7.0, 15, 'K', 0]

O2-d
###A ferromagnetic oxide semiconductor as spin injection electrode in magnetic tunnel junction|H. Toyosaki,T. Fukumura,K. Ueno,M. Nakano,M. Kawasaki###
(549224, 549227)
 A magnetic tunnel junctions composed of room temperature ferromagneticsemiconductor rutile Ti1-xCoxO2-d and ferromagnetic metal Fe0.1Co0.9 separatedby AlOx barrier showed positive tunneling magnetoresistance (TMR) with a ratioof 11 % at 15 K, indicating that Ti1-xCoxO2-d can be used as a spin injectionelectrode.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[12.0, 15, 'K', 0]

K
###A ferromagnetic oxide semiconductor as spin injection electrode in magnetic tunnel junction|H. Toyosaki,T. Fukumura,K. Ueno,M. Nakano,M. Kawasaki###
(549270, 549270)
 The TMR decreased with increasing temperature and vanished above 180K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 15, 'K', 1]

LaAlO3
###Spin-dependent tunneling through high-k LaAlO3|V. Garcia,M. Bibes,J. -L. Maurice,E. Jacquet,K. Bouzehouane,J. -P. Contour,A. Barthelemy###
(549354, 549357)
Spin-dependent tunneling through high-k<missing VAR> LaAlO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 77, '%', 2]

LaAlO3
###Spin-dependent tunneling through high-k LaAlO3|V. Garcia,M. Bibes,J. -L. Maurice,E. Jacquet,K. Bouzehouane,J. -P. Contour,A. Barthelemy###
(549374, 549377)
 We report on the use of the LaAlO3 (L<missing VAR>AO) high-k<missing VAR> dielectric as a tunnelbarrier in magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 77, '%', 1]

O
###Spin-dependent tunneling through high-k LaAlO3|V. Garcia,M. Bibes,J. -L. Maurice,E. Jacquet,K. Bouzehouane,J. -P. Contour,A. Barthelemy###
(549382, 549382)
 We report on the use of the LaAlO3 (L<missing VAR>AO) high-k<missing VAR> dielectric as a tunnelbarrier in magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 77, '%', 1]

La2
###Spin-dependent tunneling through high-k LaAlO3|V. Garcia,M. Bibes,J. -L. Maurice,E. Jacquet,K. Bouzehouane,J. -P. Contour,A. Barthelemy###
(549428, 549429)
 From tunnel magnetoresistance (TMR)measurements on epitaxial La2/3Sr1/3MnO3/L<missing VAR>AO/La2/3Sr1/3MnO3 junctions, weestimate a spin polarization of 77% at low temperature for theLa2/3Sr1/3MnO3/L<missing VAR>AO interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 77, '%', 0]

Sr1
###Spin-dependent tunneling through high-k LaAlO3|V. Garcia,M. Bibes,J. -L. Maurice,E. Jacquet,K. Bouzehouane,J. -P. Contour,A. Barthelemy###
(549432, 549433)
 From tunnel magnetoresistance (TMR)measurements on epitaxial La2/3Sr1/3MnO3/L<missing VAR>AO/La2/3Sr1/3MnO3 junctions, weestimate a spin polarization of 77% at low temperature for theLa2/3Sr1/3MnO3/L<missing VAR>AO interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 77, '%', 0]

MnO3
###Spin-dependent tunneling through high-k LaAlO3|V. Garcia,M. Bibes,J. -L. Maurice,E. Jacquet,K. Bouzehouane,J. -P. Contour,A. Barthelemy###
(549436, 549438)
 From tunnel magnetoresistance (TMR)measurements on epitaxial La2/3Sr1/3MnO3/L<missing VAR>AO/La2/3Sr1/3MnO3 junctions, weestimate a spin polarization of 77% at low temperature for theLa2/3Sr1/3MnO3/L<missing VAR>AO interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 77, '%', 0]

O/La2
###Spin-dependent tunneling through high-k LaAlO3|V. Garcia,M. Bibes,J. -L. Maurice,E. Jacquet,K. Bouzehouane,J. -P. Contour,A. Barthelemy###
(549442, 549445)
 From tunnel magnetoresistance (TMR)measurements on epitaxial La2/3Sr1/3MnO3/L<missing VAR>AO/La2/3Sr1/3MnO3 junctions, weestimate a spin polarization of 77% at low temperature for theLa2/3Sr1/3MnO3/L<missing VAR>AO interface.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[27.0, 77, '%', 0]

Sr1
###Spin-dependent tunneling through high-k LaAlO3|V. Garcia,M. Bibes,J. -L. Maurice,E. Jacquet,K. Bouzehouane,J. -P. Contour,A. Barthelemy###
(549448, 549449)
 From tunnel magnetoresistance (TMR)measurements on epitaxial La2/3Sr1/3MnO3/L<missing VAR>AO/La2/3Sr1/3MnO3 junctions, weestimate a spin polarization of 77% at low temperature for theLa2/3Sr1/3MnO3/L<missing VAR>AO interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 77, '%', 0]

MnO3
###Spin-dependent tunneling through high-k LaAlO3|V. Garcia,M. Bibes,J. -L. Maurice,E. Jacquet,K. Bouzehouane,J. -P. Contour,A. Barthelemy###
(549452, 549454)
 From tunnel magnetoresistance (TMR)measurements on epitaxial La2/3Sr1/3MnO3/L<missing VAR>AO/La2/3Sr1/3MnO3 junctions, weestimate a spin polarization of 77% at low temperature for theLa2/3Sr1/3MnO3/L<missing VAR>AO interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 77, '%', 0]

La2
###Spin-dependent tunneling through high-k LaAlO3|V. Garcia,M. Bibes,J. -L. Maurice,E. Jacquet,K. Bouzehouane,J. -P. Contour,A. Barthelemy###
(549486, 549487)
 From tunnel magnetoresistance (TMR)measurements on epitaxial La2/3Sr1/3MnO3/L<missing VAR>AO/La2/3Sr1/3MnO3 junctions, weestimate a spin polarization of 77% at low temperature for theLa2/3Sr1/3MnO3/L<missing VAR>AO interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 77, '%', 0]

Sr1
###Spin-dependent tunneling through high-k LaAlO3|V. Garcia,M. Bibes,J. -L. Maurice,E. Jacquet,K. Bouzehouane,J. -P. Contour,A. Barthelemy###
(549490, 549491)
 From tunnel magnetoresistance (TMR)measurements on epitaxial La2/3Sr1/3MnO3/L<missing VAR>AO/La2/3Sr1/3MnO3 junctions, weestimate a spin polarization of 77% at low temperature for theLa2/3Sr1/3MnO3/L<missing VAR>AO interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 77, '%', 0]

MnO3
###Spin-dependent tunneling through high-k LaAlO3|V. Garcia,M. Bibes,J. -L. Maurice,E. Jacquet,K. Bouzehouane,J. -P. Contour,A. Barthelemy###
(549494, 549496)
 From tunnel magnetoresistance (TMR)measurements on epitaxial La2/3Sr1/3MnO3/L<missing VAR>AO/La2/3Sr1/3MnO3 junctions, weestimate a spin polarization of 77% at low temperature for theLa2/3Sr1/3MnO3/L<missing VAR>AO interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 77, '%', 0]

O
###Spin-dependent tunneling through high-k LaAlO3|V. Garcia,M. Bibes,J. -L. Maurice,E. Jacquet,K. Bouzehouane,J. -P. Contour,A. Barthelemy###
(549500, 549500)
 From tunnel magnetoresistance (TMR)measurements on epitaxial La2/3Sr1/3MnO3/L<missing VAR>AO/La2/3Sr1/3MnO3 junctions, weestimate a spin polarization of 77% at low temperature for theLa2/3Sr1/3MnO3/L<missing VAR>AO interface.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 77, '%', 0]

La2
###Spin-dependent tunneling through high-k LaAlO3|V. Garcia,M. Bibes,J. -L. Maurice,E. Jacquet,K. Bouzehouane,J. -P. Contour,A. Barthelemy###
(549516, 549517)
 Remarkably, the TMR of La2/3Sr1/3MnO3/L<missing VAR>AO/Cojunctions at low bias is negative, evidencing a negative spin polarization ofCo at the interface with L<missing VAR>AO, and its bias dependence is very similar to thatof La2/3Sr1/3MnO3/ST<missing VAR>O/Co junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 77, '%', 1]

Sr1
###Spin-dependent tunneling through high-k LaAlO3|V. Garcia,M. Bibes,J. -L. Maurice,E. Jacquet,K. Bouzehouane,J. -P. Contour,A. Barthelemy###
(549520, 549521)
 Remarkably, the TMR of La2/3Sr1/3MnO3/L<missing VAR>AO/Cojunctions at low bias is negative, evidencing a negative spin polarization ofCo at the interface with L<missing VAR>AO, and its bias dependence is very similar to thatof La2/3Sr1/3MnO3/ST<missing VAR>O/Co junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 77, '%', 1]

MnO3
###Spin-dependent tunneling through high-k LaAlO3|V. Garcia,M. Bibes,J. -L. Maurice,E. Jacquet,K. Bouzehouane,J. -P. Contour,A. Barthelemy###
(549524, 549526)
 Remarkably, the TMR of La2/3Sr1/3MnO3/L<missing VAR>AO/Cojunctions at low bias is negative, evidencing a negative spin polarization ofCo at the interface with L<missing VAR>AO, and its bias dependence is very similar to thatof La2/3Sr1/3MnO3/ST<missing VAR>O/Co junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 77, '%', 1]

O/Co
###Spin-dependent tunneling through high-k LaAlO3|V. Garcia,M. Bibes,J. -L. Maurice,E. Jacquet,K. Bouzehouane,J. -P. Contour,A. Barthelemy###
(549530, 549532)
 Remarkably, the TMR of La2/3Sr1/3MnO3/L<missing VAR>AO/Cojunctions at low bias is negative, evidencing a negative spin polarization ofCo at the interface with L<missing VAR>AO, and its bias dependence is very similar to thatof La2/3Sr1/3MnO3/ST<missing VAR>O/Co junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[58.0, 77, '%', 1]

Co
###Spin-dependent tunneling through high-k LaAlO3|V. Garcia,M. Bibes,J. -L. Maurice,E. Jacquet,K. Bouzehouane,J. -P. Contour,A. Barthelemy###
(549561, 549561)
 Remarkably, the TMR of La2/3Sr1/3MnO3/L<missing VAR>AO/Cojunctions at low bias is negative, evidencing a negative spin polarization ofCo at the interface with L<missing VAR>AO, and its bias dependence is very similar to thatof La2/3Sr1/3MnO3/ST<missing VAR>O/Co junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 77, '%', 1]

O
###Spin-dependent tunneling through high-k LaAlO3|V. Garcia,M. Bibes,J. -L. Maurice,E. Jacquet,K. Bouzehouane,J. -P. Contour,A. Barthelemy###
(549573, 549573)
 Remarkably, the TMR of La2/3Sr1/3MnO3/L<missing VAR>AO/Cojunctions at low bias is negative, evidencing a negative spin polarization ofCo at the interface with L<missing VAR>AO, and its bias dependence is very similar to thatof La2/3Sr1/3MnO3/ST<missing VAR>O/Co junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 77, '%', 1]

La2
###Spin-dependent tunneling through high-k LaAlO3|V. Garcia,M. Bibes,J. -L. Maurice,E. Jacquet,K. Bouzehouane,J. -P. Contour,A. Barthelemy###
(549597, 549598)
 Remarkably, the TMR of La2/3Sr1/3MnO3/L<missing VAR>AO/Cojunctions at low bias is negative, evidencing a negative spin polarization ofCo at the interface with L<missing VAR>AO, and its bias dependence is very similar to thatof La2/3Sr1/3MnO3/ST<missing VAR>O/Co junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 77, '%', 1]

Sr1
###Spin-dependent tunneling through high-k LaAlO3|V. Garcia,M. Bibes,J. -L. Maurice,E. Jacquet,K. Bouzehouane,J. -P. Contour,A. Barthelemy###
(549601, 549602)
 Remarkably, the TMR of La2/3Sr1/3MnO3/L<missing VAR>AO/Cojunctions at low bias is negative, evidencing a negative spin polarization ofCo at the interface with L<missing VAR>AO, and its bias dependence is very similar to thatof La2/3Sr1/3MnO3/ST<missing VAR>O/Co junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 77, '%', 1]

MnO3/S
###Spin-dependent tunneling through high-k LaAlO3|V. Garcia,M. Bibes,J. -L. Maurice,E. Jacquet,K. Bouzehouane,J. -P. Contour,A. Barthelemy###
(549605, 549609)
 Remarkably, the TMR of La2/3Sr1/3MnO3/L<missing VAR>AO/Cojunctions at low bias is negative, evidencing a negative spin polarization ofCo at the interface with L<missing VAR>AO, and its bias dependence is very similar to thatof La2/3Sr1/3MnO3/ST<missing VAR>O/Co junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[133.0, 77, '%', 1]

O/Co
###Spin-dependent tunneling through high-k LaAlO3|V. Garcia,M. Bibes,J. -L. Maurice,E. Jacquet,K. Bouzehouane,J. -P. Contour,A. Barthelemy###
(549611, 549613)
 Remarkably, the TMR of La2/3Sr1/3MnO3/L<missing VAR>AO/Cojunctions at low bias is negative, evidencing a negative spin polarization ofCo at the interface with L<missing VAR>AO, and its bias dependence is very similar to thatof La2/3Sr1/3MnO3/ST<missing VAR>O/Co junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[139.0, 77, '%', 1]

C
###Physical Meaning of the Current Vertex Corrections: DC and AC Transport Phenomena in High-Tc Superconductors|Hiroshi Kontani###
(549657, 549657)
Physical Meaning of the Current Vertex Corrections D<missing VAR>C and AC Transport Phenomena in High-Tc Superconductors.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Physical Meaning of the Current Vertex Corrections: DC and AC Transport Phenomena in High-Tc Superconductors|Hiroshi Kontani###
(549662, 549662)
Physical Meaning of the Current Vertex Corrections D<missing VAR>C and AC Transport Phenomena in High-Tc Superconductors.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###Physical Meaning of the Current Vertex Corrections: DC and AC Transport Phenomena in High-Tc Superconductors|Hiroshi Kontani###
(549672, 549672)
Physical Meaning of the Current Vertex Corrections D<missing VAR>C and AC Transport Phenomena in High-Tc Superconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###Physical Meaning of the Current Vertex Corrections: DC and AC Transport Phenomena in High-Tc Superconductors|Hiroshi Kontani###
(549701, 549701)
 Famous non-Fermi liquid-like behaviors of the transport phenomena in high-Tccuprates (Hall coefficient, magnetoresistance, thermoelectric power, Nernstcoefficient, etc) are caused by the current vertex corrections in nearyantiferromagnetic (AF) Fermi liquid, which was called the backflow by Landau.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Physical Meaning of the Current Vertex Corrections: DC and AC Transport Phenomena in High-Tc Superconductors|Hiroshi Kontani###
(549752, 549752)
 Famous non-Fermi liquid-like behaviors of the transport phenomena in high-Tccuprates (Hall coefficient, magnetoresistance, thermoelectric power, Nernstcoefficient, etc) are caused by the current vertex corrections in nearyantiferromagnetic (AF) Fermi liquid, which was called the backflow by Landau.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Physical Meaning of the Current Vertex Corrections: DC and AC Transport Phenomena in High-Tc Superconductors|Hiroshi Kontani###
(549806, 549806)
 In nearly AF Fermi liquid, R<missing VAR>H is enhanced by the backflowbecause it changes the effective curvature of the Fermi surfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Physical Meaning of the Current Vertex Corrections: DC and AC Transport Phenomena in High-Tc Superconductors|Hiroshi Kontani###
(549811, 549811)
 In nearly AF Fermi liquid, R<missing VAR>H is enhanced by the backflowbecause it changes the effective curvature of the Fermi surfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Physical Meaning of the Current Vertex Corrections: DC and AC Transport Phenomena in High-Tc Superconductors|Hiroshi Kontani###
(549819, 549819)
 In nearly AF Fermi liquid, R<missing VAR>H is enhanced by the backflowbecause it changes the effective curvature of the Fermi surfaces.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Physical Meaning of the Current Vertex Corrections: DC and AC Transport Phenomena in High-Tc Superconductors|Hiroshi Kontani###
(549893, 549893)
 Therefore,the relaxation time approximation is not appricalbe to a system near a magneticquantum critical point (Q<missing VAR>CP).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La1-x
###Orbital polaron lattice formation in lightly doped La1-xSrxMnO3|J. Geck,P. Wochner,S. Kiele,R. Klingeler,P. Reutler,A. Revcolevschi,B. Buechner###
(549919, 549922)
Orbital polaron lattice formation in lightly doped La1-xSrxMnO3.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

MnO3
###Orbital polaron lattice formation in lightly doped La1-xSrxMnO3|J. Geck,P. Wochner,S. Kiele,R. Klingeler,P. Reutler,A. Revcolevschi,B. Buechner###
(549924, 549926)
Orbital polaron lattice formation in lightly doped La1-xSrxMnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Orbital polaron lattice formation in lightly doped La1-xSrxMnO3|J. Geck,P. Wochner,S. Kiele,R. Klingeler,P. Reutler,A. Revcolevschi,B. Buechner###
(549943, 549943)
 By resonant x<missing VAR>-ray scattering at the Mn K-edge on La7/8Sr1/8MnO3, we show thatan orbital polaron lattice (OPL) develops at the metal-insulator transition ofthis compound.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Orbital polaron lattice formation in lightly doped La1-xSrxMnO3|J. Geck,P. Wochner,S. Kiele,R. Klingeler,P. Reutler,A. Revcolevschi,B. Buechner###
(549945, 549945)
 By resonant x<missing VAR>-ray scattering at the Mn K-edge on La7/8Sr1/8MnO3, we show thatan orbital polaron lattice (OPL) develops at the metal-insulator transition ofthis compound.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La7
###Orbital polaron lattice formation in lightly doped La1-xSrxMnO3|J. Geck,P. Wochner,S. Kiele,R. Klingeler,P. Reutler,A. Revcolevschi,B. Buechner###
(549951, 549952)
 By resonant x<missing VAR>-ray scattering at the Mn K-edge on La7/8Sr1/8MnO3, we show thatan orbital polaron lattice (OPL) develops at the metal-insulator transition ofthis compound.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr1
###Orbital polaron lattice formation in lightly doped La1-xSrxMnO3|J. Geck,P. Wochner,S. Kiele,R. Klingeler,P. Reutler,A. Revcolevschi,B. Buechner###
(549955, 549956)
 By resonant x<missing VAR>-ray scattering at the Mn K-edge on La7/8Sr1/8MnO3, we show thatan orbital polaron lattice (OPL) develops at the metal-insulator transition ofthis compound.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnO3
###Orbital polaron lattice formation in lightly doped La1-xSrxMnO3|J. Geck,P. Wochner,S. Kiele,R. Klingeler,P. Reutler,A. Revcolevschi,B. Buechner###
(549959, 549961)
 By resonant x<missing VAR>-ray scattering at the Mn K-edge on La7/8Sr1/8MnO3, we show thatan orbital polaron lattice (OPL) develops at the metal-insulator transition ofthis compound.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OP
###Orbital polaron lattice formation in lightly doped La1-xSrxMnO3|J. Geck,P. Wochner,S. Kiele,R. Klingeler,P. Reutler,A. Revcolevschi,B. Buechner###
(549980, 549981)
 By resonant x<missing VAR>-ray scattering at the Mn K-edge on La7/8Sr1/8MnO3, we show thatan orbital polaron lattice (OPL) develops at the metal-insulator transition ofthis compound.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnO2
###Orbital polaron lattice formation in lightly doped La1-xSrxMnO3|J. Geck,P. Wochner,S. Kiele,R. Klingeler,P. Reutler,A. Revcolevschi,B. Buechner###
(550058, 550060)
 This orbital reordering explains consistently the unexpectedcoexistence of ferromagnetic and insulating properties at low temperatures, thequadrupling of the lattice structure parallel to the MnO2-planes, and theobserved polarization and azimuthal dependencies.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OP
###Orbital polaron lattice formation in lightly doped La1-xSrxMnO3|J. Geck,P. Wochner,S. Kiele,R. Klingeler,P. Reutler,A. Revcolevschi,B. Buechner###
(550083, 550084)
 The OPL<missing VAR> is a clearmanifestation of strong orbital-hole interactions, which play a crucial rolefor the colossal magnetoresistance effect and the doped manganites in general.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Na0.5CoO2
###Neutron scattering study of novel magnetic order in Na0.5CoO2|G. Gasparovic,R. A. Ott,J. -H. Cho,F. C. Chou,Y. Chu,J. W. Lynn,Y. S. Lee###
(550165, 550169)
Neutron scattering study of novel magnetic order in Na0.5CoO2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Na0.5CoO2
###Neutron scattering study of novel magnetic order in Na0.5CoO2|G. Gasparovic,R. A. Ott,J. -H. Cho,F. C. Chou,Y. Chu,J. W. Lynn,Y. S. Lee###
(550205, 550209)
 We report polarized and unpolarized neutron scattering measurements of themagnetic order in single crystals of Na0.5CoO2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N88
###Neutron scattering study of novel magnetic order in Na0.5CoO2|G. Gasparovic,R. A. Ott,J. -H. Cho,F. C. Chou,Y. Chu,J. W. Lynn,Y. S. Lee###
(550224, 550225)
 Our data indicate that belowT<missing VAR>N88 K the spins form a novel antiferromagnetic pattern within the CoO2planes, consisting of alternating rows of ordered and non-ordered Co ions.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Neutron scattering study of novel magnetic order in Na0.5CoO2|G. Gasparovic,R. A. Ott,J. -H. Cho,F. C. Chou,Y. Chu,J. W. Lynn,Y. S. Lee###
(550227, 550227)
 Our data indicate that belowT<missing VAR>N88 K the spins form a novel antiferromagnetic pattern within the CoO2planes, consisting of alternating rows of ordered and non-ordered Co ions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoO2
###Neutron scattering study of novel magnetic order in Na0.5CoO2|G. Gasparovic,R. A. Ott,J. -H. Cho,F. C. Chou,Y. Chu,J. W. Lynn,Y. S. Lee###
(550247, 550249)
 Our data indicate that belowT<missing VAR>N88 K the spins form a novel antiferromagnetic pattern within the CoO2planes, consisting of alternating rows of ordered and non-ordered Co ions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Neutron scattering study of novel magnetic order in Na0.5CoO2|G. Gasparovic,R. A. Ott,J. -H. Cho,F. C. Chou,Y. Chu,J. W. Lynn,Y. S. Lee###
(550273, 550273)
 Our data indicate that belowT<missing VAR>N88 K the spins form a novel antiferromagnetic pattern within the CoO2planes, consisting of alternating rows of ordered and non-ordered Co ions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Na
###Neutron scattering study of novel magnetic order in Na0.5CoO2|G. Gasparovic,R. A. Ott,J. -H. Cho,F. C. Chou,Y. Chu,J. W. Lynn,Y. S. Lee###
(550303, 550303)
 Thedomains of magnetic order are closely coupled to the domains of Na ion order,consistent with such a two-fold symmetric spin arrangement.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Co-doped (La,Sr)TiO3-d: a high-Curie temperature diluted magnetic system with large spin-polarization|G. Herranz,R. Ranchal,M. Bibes,H. Jaffres,E. Jacquet,J. L. Maurice,K. Bouzehouane,F. Wyczisk,E. Tafra,M. Basletic,A. Hamzic,C. Colliex,J. -P. Contour,A. Barthelemy,A. Fert###
(550369, 550369)
Co-doped (La,Sr)TiO3-d a high-Curie temperature diluted magnetic system with large spin-polarization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La
###Co-doped (La,Sr)TiO3-d: a high-Curie temperature diluted magnetic system with large spin-polarization|G. Herranz,R. Ranchal,M. Bibes,H. Jaffres,E. Jacquet,J. L. Maurice,K. Bouzehouane,F. Wyczisk,E. Tafra,M. Basletic,A. Hamzic,C. Colliex,J. -P. Contour,A. Barthelemy,A. Fert###
(550374, 550374)
Co-doped (La,Sr)TiO3-d a high-Curie temperature diluted magnetic system with large spin-polarization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr
###Co-doped (La,Sr)TiO3-d: a high-Curie temperature diluted magnetic system with large spin-polarization|G. Herranz,R. Ranchal,M. Bibes,H. Jaffres,E. Jacquet,J. L. Maurice,K. Bouzehouane,F. Wyczisk,E. Tafra,M. Basletic,A. Hamzic,C. Colliex,J. -P. Contour,A. Barthelemy,A. Fert###
(550376, 550376)
Co-doped (La,Sr)TiO3-d a high-Curie temperature diluted magnetic system with large spin-polarization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TiO3-d
###Co-doped (La,Sr)TiO3-d: a high-Curie temperature diluted magnetic system with large spin-polarization|G. Herranz,R. Ranchal,M. Bibes,H. Jaffres,E. Jacquet,J. L. Maurice,K. Bouzehouane,F. Wyczisk,E. Tafra,M. Basletic,A. Hamzic,C. Colliex,J. -P. Contour,A. Barthelemy,A. Fert###
(550378, 550382)
Co-doped (La,Sr)TiO3-d a high-Curie temperature diluted magnetic system with large spin-polarization.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

Co
###Co-doped (La,Sr)TiO3-d: a high-Curie temperature diluted magnetic system with large spin-polarization|G. Herranz,R. Ranchal,M. Bibes,H. Jaffres,E. Jacquet,J. L. Maurice,K. Bouzehouane,F. Wyczisk,E. Tafra,M. Basletic,A. Hamzic,C. Colliex,J. -P. Contour,A. Barthelemy,A. Fert###
(550446, 550446)
 We report on tunneling magnetoresistance (TMR) experiments that demonstratethe existence of a significant spin polarization in Co-doped (La,Sr)TiO3-d(Co-LSTO), a ferromagnetic diluted magnetic oxide system (DMOS) with high Curietemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La
###Co-doped (La,Sr)TiO3-d: a high-Curie temperature diluted magnetic system with large spin-polarization|G. Herranz,R. Ranchal,M. Bibes,H. Jaffres,E. Jacquet,J. L. Maurice,K. Bouzehouane,F. Wyczisk,E. Tafra,M. Basletic,A. Hamzic,C. Colliex,J. -P. Contour,A. Barthelemy,A. Fert###
(550451, 550451)
 We report on tunneling magnetoresistance (TMR) experiments that demonstratethe existence of a significant spin polarization in Co-doped (La,Sr)TiO3-d(Co-LSTO), a ferromagnetic diluted magnetic oxide system (DMOS) with high Curietemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr
###Co-doped (La,Sr)TiO3-d: a high-Curie temperature diluted magnetic system with large spin-polarization|G. Herranz,R. Ranchal,M. Bibes,H. Jaffres,E. Jacquet,J. L. Maurice,K. Bouzehouane,F. Wyczisk,E. Tafra,M. Basletic,A. Hamzic,C. Colliex,J. -P. Contour,A. Barthelemy,A. Fert###
(550453, 550453)
 We report on tunneling magnetoresistance (TMR) experiments that demonstratethe existence of a significant spin polarization in Co-doped (La,Sr)TiO3-d(Co-LSTO), a ferromagnetic diluted magnetic oxide system (DMOS) with high Curietemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TiO3-d
###Co-doped (La,Sr)TiO3-d: a high-Curie temperature diluted magnetic system with large spin-polarization|G. Herranz,R. Ranchal,M. Bibes,H. Jaffres,E. Jacquet,J. L. Maurice,K. Bouzehouane,F. Wyczisk,E. Tafra,M. Basletic,A. Hamzic,C. Colliex,J. -P. Contour,A. Barthelemy,A. Fert###
(550455, 550459)
 We report on tunneling magnetoresistance (TMR) experiments that demonstratethe existence of a significant spin polarization in Co-doped (La,Sr)TiO3-d(Co-LSTO), a ferromagnetic diluted magnetic oxide system (DMOS) with high Curietemperature.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

Co
###Co-doped (La,Sr)TiO3-d: a high-Curie temperature diluted magnetic system with large spin-polarization|G. Herranz,R. Ranchal,M. Bibes,H. Jaffres,E. Jacquet,J. L. Maurice,K. Bouzehouane,F. Wyczisk,E. Tafra,M. Basletic,A. Hamzic,C. Colliex,J. -P. Contour,A. Barthelemy,A. Fert###
(550463, 550463)
 We report on tunneling magnetoresistance (TMR) experiments that demonstratethe existence of a significant spin polarization in Co-doped (La,Sr)TiO3-d(Co-LSTO), a ferromagnetic diluted magnetic oxide system (DMOS) with high Curietemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Co-doped (La,Sr)TiO3-d: a high-Curie temperature diluted magnetic system with large spin-polarization|G. Herranz,R. Ranchal,M. Bibes,H. Jaffres,E. Jacquet,J. L. Maurice,K. Bouzehouane,F. Wyczisk,E. Tafra,M. Basletic,A. Hamzic,C. Colliex,J. -P. Contour,A. Barthelemy,A. Fert###
(550468, 550468)
 We report on tunneling magnetoresistance (TMR) experiments that demonstratethe existence of a significant spin polarization in Co-doped (La,Sr)TiO3-d(Co-LSTO), a ferromagnetic diluted magnetic oxide system (DMOS) with high Curietemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Co-doped (La,Sr)TiO3-d: a high-Curie temperature diluted magnetic system with large spin-polarization|G. Herranz,R. Ranchal,M. Bibes,H. Jaffres,E. Jacquet,J. L. Maurice,K. Bouzehouane,F. Wyczisk,E. Tafra,M. Basletic,A. Hamzic,C. Colliex,J. -P. Contour,A. Barthelemy,A. Fert###
(550488, 550488)
 We report on tunneling magnetoresistance (TMR) experiments that demonstratethe existence of a significant spin polarization in Co-doped (La,Sr)TiO3-d(Co-LSTO), a ferromagnetic diluted magnetic oxide system (DMOS) with high Curietemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Co-doped (La,Sr)TiO3-d: a high-Curie temperature diluted magnetic system with large spin-polarization|G. Herranz,R. Ranchal,M. Bibes,H. Jaffres,E. Jacquet,J. L. Maurice,K. Bouzehouane,F. Wyczisk,E. Tafra,M. Basletic,A. Hamzic,C. Colliex,J. -P. Contour,A. Barthelemy,A. Fert###
(550526, 550526)
 These TMR experiments have been performed on magnetic tunneljunctions associating Co-LSTO and Co electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Co-doped (La,Sr)TiO3-d: a high-Curie temperature diluted magnetic system with large spin-polarization|G. Herranz,R. Ranchal,M. Bibes,H. Jaffres,E. Jacquet,J. L. Maurice,K. Bouzehouane,F. Wyczisk,E. Tafra,M. Basletic,A. Hamzic,C. Colliex,J. -P. Contour,A. Barthelemy,A. Fert###
(550531, 550531)
 These TMR experiments have been performed on magnetic tunneljunctions associating Co-LSTO and Co electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Co-doped (La,Sr)TiO3-d: a high-Curie temperature diluted magnetic system with large spin-polarization|G. Herranz,R. Ranchal,M. Bibes,H. Jaffres,E. Jacquet,J. L. Maurice,K. Bouzehouane,F. Wyczisk,E. Tafra,M. Basletic,A. Hamzic,C. Colliex,J. -P. Contour,A. Barthelemy,A. Fert###
(550535, 550535)
 These TMR experiments have been performed on magnetic tunneljunctions associating Co-LSTO and Co electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Co-doped (La,Sr)TiO3-d: a high-Curie temperature diluted magnetic system with large spin-polarization|G. Herranz,R. Ranchal,M. Bibes,H. Jaffres,E. Jacquet,J. L. Maurice,K. Bouzehouane,F. Wyczisk,E. Tafra,M. Basletic,A. Hamzic,C. Colliex,J. -P. Contour,A. Barthelemy,A. Fert###
(550549, 550549)
 Extensive structural analysisof Co-LSTO combining high-resolution transmission electron microscopy and Augerelectron spectroscopy excluded the presence of Co clusters in the Co-LSTO layerand thus, the measured ferromagnetism and high spin polarization are intrinsicproperties of this DMOS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Co-doped (La,Sr)TiO3-d: a high-Curie temperature diluted magnetic system with large spin-polarization|G. Herranz,R. Ranchal,M. Bibes,H. Jaffres,E. Jacquet,J. L. Maurice,K. Bouzehouane,F. Wyczisk,E. Tafra,M. Basletic,A. Hamzic,C. Colliex,J. -P. Contour,A. Barthelemy,A. Fert###
(550554, 550554)
 Extensive structural analysisof Co-LSTO combining high-resolution transmission electron microscopy and Augerelectron spectroscopy excluded the presence of Co clusters in the Co-LSTO layerand thus, the measured ferromagnetism and high spin polarization are intrinsicproperties of this DMOS.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Co-doped (La,Sr)TiO3-d: a high-Curie temperature diluted magnetic system with large spin-polarization|G. Herranz,R. Ranchal,M. Bibes,H. Jaffres,E. Jacquet,J. L. Maurice,K. Bouzehouane,F. Wyczisk,E. Tafra,M. Basletic,A. Hamzic,C. Colliex,J. -P. Contour,A. Barthelemy,A. Fert###
(550585, 550585)
 Extensive structural analysisof Co-LSTO combining high-resolution transmission electron microscopy and Augerelectron spectroscopy excluded the presence of Co clusters in the Co-LSTO layerand thus, the measured ferromagnetism and high spin polarization are intrinsicproperties of this DMOS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Co-doped (La,Sr)TiO3-d: a high-Curie temperature diluted magnetic system with large spin-polarization|G. Herranz,R. Ranchal,M. Bibes,H. Jaffres,E. Jacquet,J. L. Maurice,K. Bouzehouane,F. Wyczisk,E. Tafra,M. Basletic,A. Hamzic,C. Colliex,J. -P. Contour,A. Barthelemy,A. Fert###
(550593, 550593)
 Extensive structural analysisof Co-LSTO combining high-resolution transmission electron microscopy and Augerelectron spectroscopy excluded the presence of Co clusters in the Co-LSTO layerand thus, the measured ferromagnetism and high spin polarization are intrinsicproperties of this DMOS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Co-doped (La,Sr)TiO3-d: a high-Curie temperature diluted magnetic system with large spin-polarization|G. Herranz,R. Ranchal,M. Bibes,H. Jaffres,E. Jacquet,J. L. Maurice,K. Bouzehouane,F. Wyczisk,E. Tafra,M. Basletic,A. Hamzic,C. Colliex,J. -P. Contour,A. Barthelemy,A. Fert###
(550598, 550598)
 Extensive structural analysisof Co-LSTO combining high-resolution transmission electron microscopy and Augerelectron spectroscopy excluded the presence of Co clusters in the Co-LSTO layerand thus, the measured ferromagnetism and high spin polarization are intrinsicproperties of this DMOS.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OS
###Co-doped (La,Sr)TiO3-d: a high-Curie temperature diluted magnetic system with large spin-polarization|G. Herranz,R. Ranchal,M. Bibes,H. Jaffres,E. Jacquet,J. L. Maurice,K. Bouzehouane,F. Wyczisk,E. Tafra,M. Basletic,A. Hamzic,C. Colliex,J. -P. Contour,A. Barthelemy,A. Fert###
(550635, 550636)
 Extensive structural analysisof Co-LSTO combining high-resolution transmission electron microscopy and Augerelectron spectroscopy excluded the presence of Co clusters in the Co-LSTO layerand thus, the measured ferromagnetism and high spin polarization are intrinsicproperties of this DMOS.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OS
###Co-doped (La,Sr)TiO3-d: a high-Curie temperature diluted magnetic system with large spin-polarization|G. Herranz,R. Ranchal,M. Bibes,H. Jaffres,E. Jacquet,J. L. Maurice,K. Bouzehouane,F. Wyczisk,E. Tafra,M. Basletic,A. Hamzic,C. Colliex,J. -P. Contour,A. Barthelemy,A. Fert###
(550651, 550652)
 Our results argue for the DMOS approach with complexoxide materials in spintronics.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La2
###Spin-polarized tunneling spectroscopy in tunnel junctions with half-metallic electrodes|M. Bowen,A. Barthélémy,M. Bibes,E. Jacquet,J. -P. Contour,A. Fert,F. Ciccacci,L. Dùo,R. Bertacco###
(550957, 550958)
 We have studied the magnetoresistance (TMR) of tunnel junctions withelectrodes of La2/3Sr1/3MnO3 and we show how the variation of the conductanceand TMR with the bias voltage can be exploited to obtain a precise informationon the spin and energy dependence of the density of states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr1
###Spin-polarized tunneling spectroscopy in tunnel junctions with half-metallic electrodes|M. Bowen,A. Barthélémy,M. Bibes,E. Jacquet,J. -P. Contour,A. Fert,F. Ciccacci,L. Dùo,R. Bertacco###
(550961, 550962)
 We have studied the magnetoresistance (TMR) of tunnel junctions withelectrodes of La2/3Sr1/3MnO3 and we show how the variation of the conductanceand TMR with the bias voltage can be exploited to obtain a precise informationon the spin and energy dependence of the density of states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnO3
###Spin-polarized tunneling spectroscopy in tunnel junctions with half-metallic electrodes|M. Bowen,A. Barthélémy,M. Bibes,E. Jacquet,J. -P. Contour,A. Fert,F. Ciccacci,L. Dùo,R. Bertacco###
(550965, 550967)
 We have studied the magnetoresistance (TMR) of tunnel junctions withelectrodes of La2/3Sr1/3MnO3 and we show how the variation of the conductanceand TMR with the bias voltage can be exploited to obtain a precise informationon the spin and energy dependence of the density of states.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La2
###Spin-polarized tunneling spectroscopy in tunnel junctions with half-metallic electrodes|M. Bowen,A. Barthélémy,M. Bibes,E. Jacquet,J. -P. Contour,A. Fert,F. Ciccacci,L. Dùo,R. Bertacco###
(551067, 551068)
 Our analysis leadsto a quantitative description of the band structure of La2/3Sr1/3MnO3 andallows the determination of the gap delta between the Fermi level and thebottom of the t2g minority spin band, in good agreement with data fromspin-polarized inverse photoemission experiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr1
###Spin-polarized tunneling spectroscopy in tunnel junctions with half-metallic electrodes|M. Bowen,A. Barthélémy,M. Bibes,E. Jacquet,J. -P. Contour,A. Fert,F. Ciccacci,L. Dùo,R. Bertacco###
(551071, 551072)
 Our analysis leadsto a quantitative description of the band structure of La2/3Sr1/3MnO3 andallows the determination of the gap delta between the Fermi level and thebottom of the t2g minority spin band, in good agreement with data fromspin-polarized inverse photoemission experiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnO3
###Spin-polarized tunneling spectroscopy in tunnel junctions with half-metallic electrodes|M. Bowen,A. Barthélémy,M. Bibes,E. Jacquet,J. -P. Contour,A. Fert,F. Ciccacci,L. Dùo,R. Bertacco###
(551075, 551077)
 Our analysis leadsto a quantitative description of the band structure of La2/3Sr1/3MnO3 andallows the determination of the gap delta between the Fermi level and thebottom of the t2g minority spin band, in good agreement with data fromspin-polarized inverse photoemission experiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Gd2Co2Al
###Large magnetoresistance and magnetocaloric effect above 70 K in Gd2Co2Al, Gd2Co2Ga and Gd7Rh3|Kausik Sengupta,Kartik K. Iyer,E. V. Sampathkumaran###
(551210, 551214)
Large magnetoresistance and magnetocaloric effect above 70 K in Gd2Co2Al, Gd2Co2Ga and Gd7Rh3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 70, 'K', 0],[84.0, 76, 'K', 1],[90.0, 140, 'K', 1]

Gd2Co2Ga
###Large magnetoresistance and magnetocaloric effect above 70 K in Gd2Co2Al, Gd2Co2Ga and Gd7Rh3|Kausik Sengupta,Kartik K. Iyer,E. V. Sampathkumaran###
(551217, 551221)
Large magnetoresistance and magnetocaloric effect above 70 K in Gd2Co2Al, Gd2Co2Ga and Gd7Rh3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 70, 'K', 0],[77.0, 76, 'K', 1],[83.0, 140, 'K', 1]

Gd7Rh3
###Large magnetoresistance and magnetocaloric effect above 70 K in Gd2Co2Al, Gd2Co2Ga and Gd7Rh3|Kausik Sengupta,Kartik K. Iyer,E. V. Sampathkumaran###
(551225, 551228)
Large magnetoresistance and magnetocaloric effect above 70 K in Gd2Co2Al, Gd2Co2Ga and Gd7Rh3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 70, 'K', 0],[70.0, 76, 'K', 1],[76.0, 140, 'K', 1]

Gd
###Large magnetoresistance and magnetocaloric effect above 70 K in Gd2Co2Al, Gd2Co2Ga and Gd7Rh3|Kausik Sengupta,Kartik K. Iyer,E. V. Sampathkumaran###
(551253, 551253)
 The electrical resistivity, magnetization and heat-capacity behavior of theGd-based compounds, Gd2Co2Al, Gd2Co2Ga and Gd7Rh3, ordering magnetically at T<missing VAR>C78 K, T<missing VAR>C 76 K and T<missing VAR>N 140 K have been investigated as a function oftemperature and magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 70, 'K', 1],[45.0, 76, 'K', 0],[51.0, 140, 'K', 0]

Gd2Co2Al
###Large magnetoresistance and magnetocaloric effect above 70 K in Gd2Co2Al, Gd2Co2Ga and Gd7Rh3|Kausik Sengupta,Kartik K. Iyer,E. V. Sampathkumaran###
(551260, 551264)
 The electrical resistivity, magnetization and heat-capacity behavior of theGd-based compounds, Gd2Co2Al, Gd2Co2Ga and Gd7Rh3, ordering magnetically at T<missing VAR>C78 K, T<missing VAR>C 76 K and T<missing VAR>N 140 K have been investigated as a function oftemperature and magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 70, 'K', 1],[34.0, 76, 'K', 0],[40.0, 140, 'K', 0]

Gd2Co2Ga
###Large magnetoresistance and magnetocaloric effect above 70 K in Gd2Co2Al, Gd2Co2Ga and Gd7Rh3|Kausik Sengupta,Kartik K. Iyer,E. V. Sampathkumaran###
(551267, 551271)
 The electrical resistivity, magnetization and heat-capacity behavior of theGd-based compounds, Gd2Co2Al, Gd2Co2Ga and Gd7Rh3, ordering magnetically at T<missing VAR>C78 K, T<missing VAR>C 76 K and T<missing VAR>N 140 K have been investigated as a function oftemperature and magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 70, 'K', 1],[27.0, 76, 'K', 0],[33.0, 140, 'K', 0]

Gd7Rh3
###Large magnetoresistance and magnetocaloric effect above 70 K in Gd2Co2Al, Gd2Co2Ga and Gd7Rh3|Kausik Sengupta,Kartik K. Iyer,E. V. Sampathkumaran###
(551275, 551278)
 The electrical resistivity, magnetization and heat-capacity behavior of theGd-based compounds, Gd2Co2Al, Gd2Co2Ga and Gd7Rh3, ordering magnetically at T<missing VAR>C78 K, T<missing VAR>C 76 K and T<missing VAR>N 140 K have been investigated as a function oftemperature and magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 70, 'K', 1],[20.0, 76, 'K', 0],[26.0, 140, 'K', 0]

C
###Large magnetoresistance and magnetocaloric effect above 70 K in Gd2Co2Al, Gd2Co2Ga and Gd7Rh3|Kausik Sengupta,Kartik K. Iyer,E. V. Sampathkumaran###
(551288, 551288)
 The electrical resistivity, magnetization and heat-capacity behavior of theGd-based compounds, Gd2Co2Al, Gd2Co2Ga and Gd7Rh3, ordering magnetically at T<missing VAR>C78 K, T<missing VAR>C 76 K and T<missing VAR>N 140 K have been investigated as a function oftemperature and magnetic field.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 70, 'K', 1],[10.0, 76, 'K', 0],[16.0, 140, 'K', 0]

K
###Large magnetoresistance and magnetocaloric effect above 70 K in Gd2Co2Al, Gd2Co2Ga and Gd7Rh3|Kausik Sengupta,Kartik K. Iyer,E. V. Sampathkumaran###
(551293, 551293)
 The electrical resistivity, magnetization and heat-capacity behavior of theGd-based compounds, Gd2Co2Al, Gd2Co2Ga and Gd7Rh3, ordering magnetically at T<missing VAR>C78 K, T<missing VAR>C 76 K and T<missing VAR>N 140 K have been investigated as a function oftemperature and magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 70, 'K', 1],[5.0, 76, 'K', 0],[11.0, 140, 'K', 0]

C
###Large magnetoresistance and magnetocaloric effect above 70 K in Gd2Co2Al, Gd2Co2Ga and Gd7Rh3|Kausik Sengupta,Kartik K. Iyer,E. V. Sampathkumaran###
(551297, 551297)
 The electrical resistivity, magnetization and heat-capacity behavior of theGd-based compounds, Gd2Co2Al, Gd2Co2Ga and Gd7Rh3, ordering magnetically at T<missing VAR>C78 K, T<missing VAR>C 76 K and T<missing VAR>N 140 K have been investigated as a function oftemperature and magnetic field.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 70, 'K', 1],[1.0, 76, 'K', 0],[7.0, 140, 'K', 0]

N
###Large magnetoresistance and magnetocaloric effect above 70 K in Gd2Co2Al, Gd2Co2Ga and Gd7Rh3|Kausik Sengupta,Kartik K. Iyer,E. V. Sampathkumaran###
(551303, 551303)
 The electrical resistivity, magnetization and heat-capacity behavior of theGd-based compounds, Gd2Co2Al, Gd2Co2Ga and Gd7Rh3, ordering magnetically at T<missing VAR>C78 K, T<missing VAR>C 76 K and T<missing VAR>N 140 K have been investigated as a function oftemperature and magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 70, 'K', 1],[5.0, 76, 'K', 0],[1.0, 140, 'K', 0]

CN
###Spin transport in disordered single-wall carbon nanotubes contacted to ferromagnetic leads|S. Krompiewski,N. Nemec,G. Cuniberti###
(551766, 551767)
 Recent conductance measurements on multi-wall carbon nanotubes (CNTs) revealan effective behavior similar to disordered single-wall CNTs.
Featurization terminated normally.
0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CN
###Spin transport in disordered single-wall carbon nanotubes contacted to ferromagnetic leads|S. Krompiewski,N. Nemec,G. Cuniberti###
(551790, 551791)
 Recent conductance measurements on multi-wall carbon nanotubes (CNTs) revealan effective behavior similar to disordered single-wall CNTs.
Featurization terminated normally.
0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CN
###Spin transport in disordered single-wall carbon nanotubes contacted to ferromagnetic leads|S. Krompiewski,N. Nemec,G. Cuniberti###
(551885, 551886)
 Here, we present theoretical studies of spin-dependenttransport through disorder-free double-wall CNTs as well as single-wall CNTswith Anderson-type disorder.
Featurization terminated normally.
0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CN
###Spin transport in disordered single-wall carbon nanotubes contacted to ferromagnetic leads|S. Krompiewski,N. Nemec,G. Cuniberti###
(551899, 551900)
 Here, we present theoretical studies of spin-dependenttransport through disorder-free double-wall CNTs as well as single-wall CNTswith Anderson-type disorder.
Featurization terminated normally.
0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CN
###Spin transport in disordered single-wall carbon nanotubes contacted to ferromagnetic leads|S. Krompiewski,N. Nemec,G. Cuniberti###
(551915, 551916)
 The CNTs are end-contacted to ferromagneticelectrodes modelled as fcc (111) surfaces.
Featurization terminated normally.
0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CN
###Spin transport in disordered single-wall carbon nanotubes contacted to ferromagnetic leads|S. Krompiewski,N. Nemec,G. Cuniberti###
(551968, 551969)
 Our results shed additional light onthe giant magnetoresistance effect in CNTs.
Featurization terminated normally.
0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CN
###Spin transport in disordered single-wall carbon nanotubes contacted to ferromagnetic leads|S. Krompiewski,N. Nemec,G. Cuniberti###
(551986, 551987)
 Some reported results concernrealistically long CNTs, up to several hundred nanometers.
Featurization terminated normally.
0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La2
###Suppression of Ferromagnetic Double Exchange by Vibronic Phase Segregation|F. Rivadulla,M. Otero-Leal,A. Espinosa,A. de Andres,C. Ramos,J. Rivas,J. B. Goodenough###
(552052, 552053)
 From Raman spectroscopy, magnetization, and thermal-expansion on the systemLa2/3(Ca1-xSrx)1/3MnO3, we have been able to provide a quantitative basis forthe heterogeneous electronic model for manganites exhibiting colossalmagnetoresistance (CMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ca1-x
###Suppression of Ferromagnetic Double Exchange by Vibronic Phase Segregation|F. Rivadulla,M. Otero-Leal,A. Espinosa,A. de Andres,C. Ramos,J. Rivas,J. B. Goodenough###
(552057, 552060)
 From Raman spectroscopy, magnetization, and thermal-expansion on the systemLa2/3(Ca1-xSrx)1/3MnO3, we have been able to provide a quantitative basis forthe heterogeneous electronic model for manganites exhibiting colossalmagnetoresistance (CMR).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

MnO3
###Suppression of Ferromagnetic Double Exchange by Vibronic Phase Segregation|F. Rivadulla,M. Otero-Leal,A. Espinosa,A. de Andres,C. Ramos,J. Rivas,J. B. Goodenough###
(552066, 552068)
 From Raman spectroscopy, magnetization, and thermal-expansion on the systemLa2/3(Ca1-xSrx)1/3MnO3, we have been able to provide a quantitative basis forthe heterogeneous electronic model for manganites exhibiting colossalmagnetoresistance (CMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Suppression of Ferromagnetic Double Exchange by Vibronic Phase Segregation|F. Rivadulla,M. Otero-Leal,A. Espinosa,A. de Andres,C. Ramos,J. Rivas,J. B. Goodenough###
(552112, 552112)
 From Raman spectroscopy, magnetization, and thermal-expansion on the systemLa2/3(Ca1-xSrx)1/3MnO3, we have been able to provide a quantitative basis forthe heterogeneous electronic model for manganites exhibiting colossalmagnetoresistance (CMR).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Suppression of Ferromagnetic Double Exchange by Vibronic Phase Segregation|F. Rivadulla,M. Otero-Leal,A. Espinosa,A. de Andres,C. Ramos,J. Rivas,J. B. Goodenough###
(552148, 552148)
 We construct a mean-field model that accountsquantitatively for the measured deviation of T<missing VAR>C(x) from the T<missing VAR>C predicted by deGennes double exchange in the adiabatic approximation, and predicts theoccurrence of a first order transition for a strong coupling regime, inaccordance with the experiments.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Suppression of Ferromagnetic Double Exchange by Vibronic Phase Segregation|F. Rivadulla,M. Otero-Leal,A. Espinosa,A. de Andres,C. Ramos,J. Rivas,J. B. Goodenough###
(552158, 552158)
 We construct a mean-field model that accountsquantitatively for the measured deviation of T<missing VAR>C(x) from the T<missing VAR>C predicted by deGennes double exchange in the adiabatic approximation, and predicts theoccurrence of a first order transition for a strong coupling regime, inaccordance with the experiments.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Suppression of Ferromagnetic Double Exchange by Vibronic Phase Segregation|F. Rivadulla,M. Otero-Leal,A. Espinosa,A. de Andres,C. Ramos,J. Rivas,J. B. Goodenough###
(552238, 552238)
 The existence of a temperature intervalT<missing VAR>C<T<T where CMR may be found is discussed, in connection with the occurrenceof an idealized Griffiths phase.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Suppression of Ferromagnetic Double Exchange by Vibronic Phase Segregation|F. Rivadulla,M. Otero-Leal,A. Espinosa,A. de Andres,C. Ramos,J. Rivas,J. B. Goodenough###
(552246, 552246)
 The existence of a temperature intervalT<missing VAR>C<T<T where CMR may be found is discussed, in connection with the occurrenceof an idealized Griffiths phase.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Spin Dependent Tunneling in FM|semiconductor|FM structures|S. Vutukuri,M. Chshiev,W. H. Butler###
(552299, 552299)
Spin Dependent Tunneling in FM<missing VAR>semiconductorFM<missing VAR> structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Spin Dependent Tunneling in FM|semiconductor|FM structures|S. Vutukuri,M. Chshiev,W. H. Butler###
(552302, 552302)
Spin Dependent Tunneling in FM<missing VAR>semiconductorFM<missing VAR> structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Spin Dependent Tunneling in FM|semiconductor|FM structures|S. Vutukuri,M. Chshiev,W. H. Butler###
(552421, 552421)
 We used the Vienna Ab-initio Simulation Code (VASP) tocalculate the wave function character of each band in periodic epitaxialFe(100)GaAs(100) and Fe(100)ZnSe(100) structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Spin Dependent Tunneling in FM|semiconductor|FM structures|S. Vutukuri,M. Chshiev,W. H. Butler###
(552424, 552424)
 We used the Vienna Ab-initio Simulation Code (VASP) tocalculate the wave function character of each band in periodic epitaxialFe(100)GaAs(100) and Fe(100)ZnSe(100) structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Spin Dependent Tunneling in FM|semiconductor|FM structures|S. Vutukuri,M. Chshiev,W. H. Butler###
(552486, 552486)
 It is shown that Fe wavefunctions of different symmetry near Fermi energy decay differently in the GaAsand ZnSe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Spin Dependent Tunneling in FM|semiconductor|FM structures|S. Vutukuri,M. Chshiev,W. H. Butler###
(552513, 552514)
 It is shown that Fe wavefunctions of different symmetry near Fermi energy decay differently in the GaAsand ZnSe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZnSe
###Spin Dependent Tunneling in FM|semiconductor|FM structures|S. Vutukuri,M. Chshiev,W. H. Butler###
(552519, 552520)
 It is shown that Fe wavefunctions of different symmetry near Fermi energy decay differently in the GaAsand ZnSe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

InSb
###Magnetic field induced band depopulation in intrinsic InSb: A revisit|Bhavtosh Bansal,V Venkataraman###
(552545, 552546)
Magnetic field induced band depopulation in intrinsic InSb A revisit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 16, 'Tesla', 1]

InSb
###Magnetic field induced band depopulation in intrinsic InSb: A revisit|Bhavtosh Bansal,V Venkataraman###
(552580, 552581)
 The effect of Landau level formation on the population of intrinsic electronsin InSb is probed near room temperature in magnetic fields upto 16 Tesla.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 16, 'Tesla', 0]

InSb
###Magnetic field induced band depopulation in intrinsic InSb: A revisit|Bhavtosh Bansal,V Venkataraman###
(552693, 552694)
 Thus the inference onband depopulation drawn from previous measurements on InSb is inconclusiveunless both the Hall and the magnetoresistive components of the resistivitytensor are simultaneously measured and modelled.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 16, 'Tesla', 2]

F
###Origin of Rapid Oscillations in Low Dimensional (TMTSF)2PF6|A. V. Kornilov,V. M. Pudalov,A. -K. Klehe,A. Ardavan,J. S. Qualls,J. Singleton###
(553240, 553240)
Origin of Rapid Oscillations in Low Dimensional (TMTSF)2PF6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 2, 'D', 2]

PF6
###Origin of Rapid Oscillations in Low Dimensional (TMTSF)2PF6|A. V. Kornilov,V. M. Pudalov,A. -K. Klehe,A. Ardavan,J. S. Qualls,J. Singleton###
(553243, 553245)
Origin of Rapid Oscillations in Low Dimensional (TMTSF)2PF6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.8571428571428571,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 2, 'D', 2]

In
###Origin of Rapid Oscillations in Low Dimensional (TMTSF)2PF6|A. V. Kornilov,V. M. Pudalov,A. -K. Klehe,A. Ardavan,J. S. Qualls,J. Singleton###
(553248, 553248)
 In order to clarify the origin of the Rapid Oscillation (R<missing VAR>O) in(TMTSF)2PF6, we studied the magnetoresistance anisotropy in the Field InducedSpin Density Wave (FISD<missing VAR>W) phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 2, 'D', 1]

O
###Origin of Rapid Oscillations in Low Dimensional (TMTSF)2PF6|A. V. Kornilov,V. M. Pudalov,A. -K. Klehe,A. Ardavan,J. S. Qualls,J. Singleton###
(553270, 553270)
 In order to clarify the origin of the Rapid Oscillation (R<missing VAR>O) in(TMTSF)2PF6, we studied the magnetoresistance anisotropy in the Field InducedSpin Density Wave (FISD<missing VAR>W) phase.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 2, 'D', 1]

F
###Origin of Rapid Oscillations in Low Dimensional (TMTSF)2PF6|A. V. Kornilov,V. M. Pudalov,A. -K. Klehe,A. Ardavan,J. S. Qualls,J. Singleton###
(553281, 553281)
 In order to clarify the origin of the Rapid Oscillation (R<missing VAR>O) in(TMTSF)2PF6, we studied the magnetoresistance anisotropy in the Field InducedSpin Density Wave (FISD<missing VAR>W) phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 2, 'D', 1]

PF6
###Origin of Rapid Oscillations in Low Dimensional (TMTSF)2PF6|A. V. Kornilov,V. M. Pudalov,A. -K. Klehe,A. Ardavan,J. S. Qualls,J. Singleton###
(553284, 553286)
 In order to clarify the origin of the Rapid Oscillation (R<missing VAR>O) in(TMTSF)2PF6, we studied the magnetoresistance anisotropy in the Field InducedSpin Density Wave (FISD<missing VAR>W) phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.8571428571428571,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 2, 'D', 1]

FIS
###Origin of Rapid Oscillations in Low Dimensional (TMTSF)2PF6|A. V. Kornilov,V. M. Pudalov,A. -K. Klehe,A. Ardavan,J. S. Qualls,J. Singleton###
(553315, 553317)
 In order to clarify the origin of the Rapid Oscillation (R<missing VAR>O) in(TMTSF)2PF6, we studied the magnetoresistance anisotropy in the Field InducedSpin Density Wave (FISD<missing VAR>W) phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 2, 'D', 1]

W
###Origin of Rapid Oscillations in Low Dimensional (TMTSF)2PF6|A. V. Kornilov,V. M. Pudalov,A. -K. Klehe,A. Ardavan,J. S. Qualls,J. Singleton###
(553319, 553319)
 In order to clarify the origin of the Rapid Oscillation (R<missing VAR>O) in(TMTSF)2PF6, we studied the magnetoresistance anisotropy in the Field InducedSpin Density Wave (FISD<missing VAR>W) phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 2, 'D', 1]

FIS
###Origin of Rapid Oscillations in Low Dimensional (TMTSF)2PF6|A. V. Kornilov,V. M. Pudalov,A. -K. Klehe,A. Ardavan,J. S. Qualls,J. Singleton###
(553337, 553339)
 We have found that in the FISD<missing VAR>W insulatingstate, the Fermi surface is not totally gapped; the remaining 2D metallicpockets are quantized in magnetic field and give rise to the R<missing VAR>O.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 2, 'D', 0]

W
###Origin of Rapid Oscillations in Low Dimensional (TMTSF)2PF6|A. V. Kornilov,V. M. Pudalov,A. -K. Klehe,A. Ardavan,J. S. Qualls,J. Singleton###
(553341, 553341)
 We have found that in the FISD<missing VAR>W insulatingstate, the Fermi surface is not totally gapped; the remaining 2D metallicpockets are quantized in magnetic field and give rise to the R<missing VAR>O.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 2, 'D', 0]

O
###Origin of Rapid Oscillations in Low Dimensional (TMTSF)2PF6|A. V. Kornilov,V. M. Pudalov,A. -K. Klehe,A. Ardavan,J. S. Qualls,J. Singleton###
(553395, 553395)
 We have found that in the FISD<missing VAR>W insulatingstate, the Fermi surface is not totally gapped; the remaining 2D metallicpockets are quantized in magnetic field and give rise to the R<missing VAR>O.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 2, 'D', 0]

O
###Origin of Rapid Oscillations in Low Dimensional (TMTSF)2PF6|A. V. Kornilov,V. M. Pudalov,A. -K. Klehe,A. Ardavan,J. S. Qualls,J. Singleton###
(553471, 553471)
 Decreasingtemperature does not change the size and orientation of the closed pockets,rather, it causes depopulation of the delocalized states in favor of thelocalized ones, resulting in the disappearance of the R<missing VAR>O.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 2, 'D', 1]

MgO
###Spin torque, tunnel-current spin polarization and magnetoresistance in MgO magnetic tunnel junctions|G. D. Fuchs,J. A. Katine,S. I. Kiselev,D. Mauri,K. S. Wooley,D. C. Ralph,R. A. Buhrman###
(553501, 553502)
Spin torque, tunnel-current spin polarization and magnetoresistance in MgO magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 10, '%', 2],[160.0, 40, '%', 2]

S
###Spin torque, tunnel-current spin polarization and magnetoresistance in MgO magnetic tunnel junctions|G. D. Fuchs,J. A. Katine,S. I. Kiselev,D. Mauri,K. S. Wooley,D. C. Ralph,R. A. Buhrman###
(553522, 553522)
 We examine the spin torque (ST) response of magnetic tunnel junctions (MTJs)with ultra-thin MgO tunnel barrier layers to investigate the relationshipbetween the spin-transfer torque and the tunnel magnetoresistance (TMR) underfinite bias.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 10, '%', 1],[140.0, 40, '%', 1]

MgO
###Spin torque, tunnel-current spin polarization and magnetoresistance in MgO magnetic tunnel junctions|G. D. Fuchs,J. A. Katine,S. I. Kiselev,D. Mauri,K. S. Wooley,D. C. Ralph,R. A. Buhrman###
(553549, 553550)
 We examine the spin torque (ST) response of magnetic tunnel junctions (MTJs)with ultra-thin MgO tunnel barrier layers to investigate the relationshipbetween the spin-transfer torque and the tunnel magnetoresistance (TMR) underfinite bias.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 10, '%', 1],[112.0, 40, '%', 1]

Ca3Co4O9
###Out of equilibrium electronic transport properties of a misfit cobaltite thin film|A. Pautrat,H. W Eng,W. Prellier###
(553784, 553789)
 We report on transport measurements in a thin film of the 2D misfit CobaltiteCa3Co4O9.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5625,0,0,0,0,0,0,0,0,0,0,0,0.1875,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 2, 'D', 0]

At
###Out of equilibrium electronic transport properties of a misfit cobaltite thin film|A. Pautrat,H. W Eng,W. Prellier###
(553853, 553853)
 At lowtemperature, these slow fluctuations have non Gaussian statistics, and arestable under a large magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 2, 'D', 3]

Cu/Co/Cu
###Current-induced switching in single ferromagnetic layer nanopillar junctions|Barbaros Oezyilmaz,Andrew D. Kent###
(554037, 554041)
 Current induced magnetization dynamics in asymmetric Cu/Co/Cu single magneticlayer nanopillars has been studied experimentally at room temperature and inlow magnetic fields applied perpendicular to the thin film plane.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[141.0, 0.5, '%', 3],[150.0, 5, 'greater', 3]

In
###Current-induced switching in single ferromagnetic layer nanopillar junctions|Barbaros Oezyilmaz,Andrew D. Kent###
(554092, 554092)
 In sub-100 nmjunctions produced using a nanostencil process a bistable state with twodistinct resistance values is observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 0.5, '%', 2],[99.0, 5, 'greater', 2]

B
###Laser microscopy of tunneling magnetoresistance in manganite grain-boundary junctions|M. Wagenknecht,H. Eitel,T. Nachtrab,J. B. Philipp,R. Gross,R. Kleiner,D. Koelle###
(554336, 554336)
 Using low-temperature scanning laser microscopy we directly image electrictransport in a magnetoresistive element, a manganite thin film intersected by agrain boundary (G<missing VAR>B).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Laser microscopy of tunneling magnetoresistance in manganite grain-boundary junctions|M. Wagenknecht,H. Eitel,T. Nachtrab,J. B. Philipp,R. Gross,R. Kleiner,D. Koelle###
(554386, 554386)
 Imaging at variable temperature allows reconstruction andcomparison of the local resistance vs temperature for both, the manganite filmand the G<missing VAR>B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Laser microscopy of tunneling magnetoresistance in manganite grain-boundary junctions|M. Wagenknecht,H. Eitel,T. Nachtrab,J. B. Philipp,R. Gross,R. Kleiner,D. Koelle###
(554406, 554406)
 Imaging at low temperature also shows that the G<missing VAR>B switches betweendifferent resistive states due to the formation and growth of magnetic domainsalong the G<missing VAR>B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Laser microscopy of tunneling magnetoresistance in manganite grain-boundary junctions|M. Wagenknecht,H. Eitel,T. Nachtrab,J. B. Philipp,R. Gross,R. Kleiner,D. Koelle###
(554443, 554443)
 Imaging at low temperature also shows that the G<missing VAR>B switches betweendifferent resistive states due to the formation and growth of magnetic domainsalong the G<missing VAR>B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Sr2CuO6
###Upper critical field from normal state fluctuations in Bi$_2$Sr$_2$CuO$_{6+δ}$|F. Bouquet,L. Fruchter,I. Sfar,Z. Z. Li,H. Raffy###
(554530, 554536)
Upper critical field from normal state fluctuations in Bi2Sr2CuO6.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5454545454545454,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.09090909090909091,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Sr2CuO6
###Upper critical field from normal state fluctuations in Bi$_2$Sr$_2$CuO$_{6+δ}$|F. Bouquet,L. Fruchter,I. Sfar,Z. Z. Li,H. Raffy###
(554553, 554559)
 The in-plane magnetoresistance of an epitaxial Bi2Sr2CuO6deltathin film was systematically investigated as a function of doping, above Tc.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5454545454545454,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.09090909090909091,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Upper critical field from normal state fluctuations in Bi$_2$Sr$_2$CuO$_{6+δ}$|F. Bouquet,L. Fruchter,I. Sfar,Z. Z. Li,H. Raffy###
(554614, 554614)
The orbital magnetoconductance is used to extract the crossover field lineHc<missing VAR>2(T) in the fluctuation regime.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Controlling spin in an electronic interferometer with spin-active interfaces|A. Cottet,T. Kontos,W. Belzig,C. Schonenberger,C. Bruder###
(554820, 554820)
 We study the effects of thespin-dependence of interfacial phase shifts (SD<missing VAR>IPS) acquired by electrons uponscattering at the boundaries of the wire.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Controlling spin in an electronic interferometer with spin-active interfaces|A. Cottet,T. Kontos,W. Belzig,C. Schonenberger,C. Bruder###
(554824, 554824)
 We study the effects of thespin-dependence of interfacial phase shifts (SD<missing VAR>IPS) acquired by electrons uponscattering at the boundaries of the wire.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Controlling spin in an electronic interferometer with spin-active interfaces|A. Cottet,T. Kontos,W. Belzig,C. Schonenberger,C. Bruder###
(554853, 554853)
 The SD<missing VAR>IPS produces a spin splittingof the wire resonant energies which is tunable with the gate voltage and theangle between the ferromagnetic polarizations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

IPS
###Controlling spin in an electronic interferometer with spin-active interfaces|A. Cottet,T. Kontos,W. Belzig,C. Schonenberger,C. Bruder###
(554855, 554857)
 The SD<missing VAR>IPS produces a spin splittingof the wire resonant energies which is tunable with the gate voltage and theangle between the ferromagnetic polarizations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Controlling spin in an electronic interferometer with spin-active interfaces|A. Cottet,T. Kontos,W. Belzig,C. Schonenberger,C. Bruder###
(554926, 554926)
 In particular, it leads to a giant magnetoresistance effectwith a sign tunable with the gate voltage and the magnetic field applied to thewire.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Angle-dependent magnetoresistance in the weakly incoherent interlayer transport regime|M. V. Kartsovnik,D. Andres,S. V. Simonov,W. Biberacher,I. Sheikin,N. D. Kushch,H. Müller###
(555049, 555049)
 We present comparative studies of the orientation effect of a strong magneticfield on the interlayer resistance of alpha-(BEDT-TTF)2KHg(SCN)4samples characterized by different crystal quality.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Angle-dependent magnetoresistance in the weakly incoherent interlayer transport regime|M. V. Kartsovnik,D. Andres,S. V. Simonov,W. Biberacher,I. Sheikin,N. D. Kushch,H. Müller###
(555056, 555056)
 We present comparative studies of the orientation effect of a strong magneticfield on the interlayer resistance of alpha-(BEDT-TTF)2KHg(SCN)4samples characterized by different crystal quality.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

KHg(SCN)4
###Angle-dependent magnetoresistance in the weakly incoherent interlayer transport regime|M. V. Kartsovnik,D. Andres,S. V. Simonov,W. Biberacher,I. Sheikin,N. D. Kushch,H. Müller###
(555059, 555066)
 We present comparative studies of the orientation effect of a strong magneticfield on the interlayer resistance of alpha-(BEDT-TTF)2KHg(SCN)4samples characterized by different crystal quality.
Featurization terminated normally.
0,0,0,0,0,0.2857142857142857,0.2857142857142857,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0.07142857142857142,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07142857142857142,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Angle-dependent magnetoresistance in the weakly incoherent interlayer transport regime|M. V. Kartsovnik,D. Andres,S. V. Simonov,W. Biberacher,I. Sheikin,N. D. Kushch,H. Müller###
(555137, 555137)
 In thelatter case, the nonoscillating magnetoresistance background is essentially afunction of only the out-of-plane field component, in contradiction to theexisting theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2
###Vortex-like excitations in a non-superconducting single-layer compound Bi$_{2+x}$Sr$_{2-x}$CuO$_{6+δ}$ single crystal in high magnetic fields|S. I. Vedeneev,D. K. Maude###
(555223, 555224)
Vortex-like excitations in a non-superconducting single-layer compound Bi2x<missing VAR>Sr2-xCuO6 single crystal in high magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 28, 'T', 1],[92.0, 20, 'mK', 1],[152.0, 1, 'K', 2],[157.0, 30, 'mK', 2]

Sr2-xCuO6
###Vortex-like excitations in a non-superconducting single-layer compound Bi$_{2+x}$Sr$_{2-x}$CuO$_{6+δ}$ single crystal in high magnetic fields|S. I. Vedeneev,D. K. Maude###
(555226, 555232)
Vortex-like excitations in a non-superconducting single-layer compound Bi2x<missing VAR>Sr2-xCuO6 single crystal in high magnetic fields.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[61.0, 28, 'T', 1],[84.0, 20, 'mK', 1],[144.0, 1, 'K', 2],[149.0, 30, 'mK', 2]

H
###Vortex-like excitations in a non-superconducting single-layer compound Bi$_{2+x}$Sr$_{2-x}$CuO$_{6+δ}$ single crystal in high magnetic fields|S. I. Vedeneev,D. K. Maude###
(555256, 555256)
 The in-plane rhoab(H,T) and the out-of-plane rhoc<missing VAR>(H,T)magneto-transport in magnetic fields up to 28 T has been investigated in highquality non-superconducting (down to 20 mK) La-freeBi2x<missing VAR>Sr2-xCuO6delta single crystal.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 28, 'T', 0],[60.0, 20, 'mK', 0],[120.0, 1, 'K', 1],[125.0, 30, 'mK', 1]

H
###Vortex-like excitations in a non-superconducting single-layer compound Bi$_{2+x}$Sr$_{2-x}$CuO$_{6+δ}$ single crystal in high magnetic fields|S. I. Vedeneev,D. K. Maude###
(555274, 555274)
 The in-plane rhoab(H,T) and the out-of-plane rhoc<missing VAR>(H,T)magneto-transport in magnetic fields up to 28 T has been investigated in highquality non-superconducting (down to 20 mK) La-freeBi2x<missing VAR>Sr2-xCuO6delta single crystal.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 28, 'T', 0],[42.0, 20, 'mK', 0],[102.0, 1, 'K', 1],[107.0, 30, 'mK', 1]

La
###Vortex-like excitations in a non-superconducting single-layer compound Bi$_{2+x}$Sr$_{2-x}$CuO$_{6+δ}$ single crystal in high magnetic fields|S. I. Vedeneev,D. K. Maude###
(555319, 555319)
 The in-plane rhoab(H,T) and the out-of-plane rhoc<missing VAR>(H,T)magneto-transport in magnetic fields up to 28 T has been investigated in highquality non-superconducting (down to 20 mK) La-freeBi2x<missing VAR>Sr2-xCuO6delta single crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 28, 'T', 0],[3.0, 20, 'mK', 0],[57.0, 1, 'K', 1],[62.0, 30, 'mK', 1]

Bi2
###Vortex-like excitations in a non-superconducting single-layer compound Bi$_{2+x}$Sr$_{2-x}$CuO$_{6+δ}$ single crystal in high magnetic fields|S. I. Vedeneev,D. K. Maude###
(555324, 555325)
 The in-plane rhoab(H,T) and the out-of-plane rhoc<missing VAR>(H,T)magneto-transport in magnetic fields up to 28 T has been investigated in highquality non-superconducting (down to 20 mK) La-freeBi2x<missing VAR>Sr2-xCuO6delta single crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 28, 'T', 0],[8.0, 20, 'mK', 0],[51.0, 1, 'K', 1],[56.0, 30, 'mK', 1]

Sr2-xCuO6
###Vortex-like excitations in a non-superconducting single-layer compound Bi$_{2+x}$Sr$_{2-x}$CuO$_{6+δ}$ single crystal in high magnetic fields|S. I. Vedeneev,D. K. Maude###
(555327, 555333)
 The in-plane rhoab(H,T) and the out-of-plane rhoc<missing VAR>(H,T)magneto-transport in magnetic fields up to 28 T has been investigated in highquality non-superconducting (down to 20 mK) La-freeBi2x<missing VAR>Sr2-xCuO6delta single crystal.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[34.0, 28, 'T', 0],[11.0, 20, 'mK', 0],[43.0, 1, 'K', 1],[48.0, 30, 'mK', 1]

In
###In-plane ferromagnetism in charge-ordering $Na_{0.55}CoO_2$|C. H. Wang,X. H. Chen,T. Wu,X. G. Luo,G. Y. Wang,J. L. Luo###
(555480, 555480)
In-plane ferromagnetism in charge-ordering Na0.55CoO2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 50, 'K', 1],[89.0, 20, 'K', 2],[171.0, 20, 'K', 3],[199.0, 6, 'T', 4]

Na0.55CoO2
###In-plane ferromagnetism in charge-ordering $Na_{0.55}CoO_2$|C. H. Wang,X. H. Chen,T. Wu,X. G. Luo,G. Y. Wang,J. L. Luo###
(555492, 555496)
In-plane ferromagnetism in charge-ordering Na0.55CoO2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5633802816901409,0,0,0.15492957746478875,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.28169014084507044,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 50, 'K', 1],[73.0, 20, 'K', 2],[155.0, 20, 'K', 3],[183.0, 6, 'T', 4]

Na0.55CoO2
###In-plane ferromagnetism in charge-ordering $Na_{0.55}CoO_2$|C. H. Wang,X. H. Chen,T. Wu,X. G. Luo,G. Y. Wang,J. L. Luo###
(555524, 555528)
 The magnetic and transport properties are systematically studied on thesingle crystal Na0.55CoO2 with charge ordering and divergency inresistivity below 50 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5633802816901409,0,0,0.15492957746478875,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.28169014084507044,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 50, 'K', 0],[41.0, 20, 'K', 1],[123.0, 20, 'K', 2],[151.0, 6, 'T', 3]

Co
###In-plane ferromagnetism in charge-ordering $Na_{0.55}CoO_2$|C. H. Wang,X. H. Chen,T. Wu,X. G. Luo,G. Y. Wang,J. L. Luo###
(555583, 555583)
 A long-range ferromagnetic ordering is observed insusceptibility below 20 K with the magnetic field parallel to Co-O plane, whilea negligible behavior is observed with the field perpendicular to the Co-Oplane.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 50, 'K', 1],[14.0, 20, 'K', 0],[68.0, 20, 'K', 1],[96.0, 6, 'T', 2]

O
###In-plane ferromagnetism in charge-ordering $Na_{0.55}CoO_2$|C. H. Wang,X. H. Chen,T. Wu,X. G. Luo,G. Y. Wang,J. L. Luo###
(555585, 555585)
 A long-range ferromagnetic ordering is observed insusceptibility below 20 K with the magnetic field parallel to Co-O plane, whilea negligible behavior is observed with the field perpendicular to the Co-Oplane.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 50, 'K', 1],[16.0, 20, 'K', 0],[66.0, 20, 'K', 1],[94.0, 6, 'T', 2]

Co
###In-plane ferromagnetism in charge-ordering $Na_{0.55}CoO_2$|C. H. Wang,X. H. Chen,T. Wu,X. G. Luo,G. Y. Wang,J. L. Luo###
(555615, 555615)
 A long-range ferromagnetic ordering is observed insusceptibility below 20 K with the magnetic field parallel to Co-O plane, whilea negligible behavior is observed with the field perpendicular to the Co-Oplane.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 50, 'K', 1],[46.0, 20, 'K', 0],[36.0, 20, 'K', 1],[64.0, 6, 'T', 2]

O
###In-plane ferromagnetism in charge-ordering $Na_{0.55}CoO_2$|C. H. Wang,X. H. Chen,T. Wu,X. G. Luo,G. Y. Wang,J. L. Luo###
(555617, 555617)
 A long-range ferromagnetic ordering is observed insusceptibility below 20 K with the magnetic field parallel to Co-O plane, whilea negligible behavior is observed with the field perpendicular to the Co-Oplane.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 50, 'K', 1],[48.0, 20, 'K', 0],[34.0, 20, 'K', 1],[62.0, 6, 'T', 2]

B
###Resistance scaling for Composite Fermions in the presence of a density gradient|W. Pan,H. L. Stormer,D. C. Tsui,L. N. Pfeiffer,K. W. Baldwin,K. W. West###
(555808, 555808)
 The magnetoresistance, Rxx, at even-denominator fractional fillings, of anultra high quality two-dimensional electron system at T<missing VAR>  35 mK is observed tobe strictly linear in magnetic field, B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 35, 'mK', 0],[6.0, 35, 'mK', 1]

K
###Resistance scaling for Composite Fermions in the presence of a density gradient|W. Pan,H. L. Stormer,D. C. Tsui,L. N. Pfeiffer,K. W. Baldwin,K. W. West###
(555844, 555844)
 While at 35mK Rxx is dominated by theinteger and fractional quantum Hall states, at T<missing VAR>1.2K an almost perfect linearrelationship between Rxx vs B emerges over the whole magnetic field rangeexcept for spikes at the integer quantum Hall states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 35, 'mK', 1],[30.0, 35, 'mK', 0]

B
###Resistance scaling for Composite Fermions in the presence of a density gradient|W. Pan,H. L. Stormer,D. C. Tsui,L. N. Pfeiffer,K. W. Baldwin,K. W. West###
(555863, 555863)
 While at 35mK Rxx is dominated by theinteger and fractional quantum Hall states, at T<missing VAR>1.2K an almost perfect linearrelationship between Rxx vs B emerges over the whole magnetic field rangeexcept for spikes at the integer quantum Hall states.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 35, 'mK', 1],[49.0, 35, 'mK', 0]

CC
###Phase coexistence and resistivity near the ferromagnetic transition of manganites|A. S. Alexandrov,A. M. Bratkovsky,V. V. Kabanov###
(556040, 556041)
 Pairing of oxygen holes into heavy bipolarons in the paramagnetic phase andtheir magnetic pair-breaking in the ferromagnetic phase [the so-calledcurrent-carrier density collapse (CCD<missing VAR>C)] has accounted for the first-orderferromagnetic phase transition, colossal magnetoresistance (CMR), isotopeeffect, and pseudogap in doped manganites.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Phase coexistence and resistivity near the ferromagnetic transition of manganites|A. S. Alexandrov,A. M. Bratkovsky,V. V. Kabanov###
(556043, 556043)
 Pairing of oxygen holes into heavy bipolarons in the paramagnetic phase andtheir magnetic pair-breaking in the ferromagnetic phase [the so-calledcurrent-carrier density collapse (CCD<missing VAR>C)] has accounted for the first-orderferromagnetic phase transition, colossal magnetoresistance (CMR), isotopeeffect, and pseudogap in doped manganites.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Phase coexistence and resistivity near the ferromagnetic transition of manganites|A. S. Alexandrov,A. M. Bratkovsky,V. V. Kabanov###
(556072, 556072)
 Pairing of oxygen holes into heavy bipolarons in the paramagnetic phase andtheir magnetic pair-breaking in the ferromagnetic phase [the so-calledcurrent-carrier density collapse (CCD<missing VAR>C)] has accounted for the first-orderferromagnetic phase transition, colossal magnetoresistance (CMR), isotopeeffect, and pseudogap in doped manganites.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CC
###Phase coexistence and resistivity near the ferromagnetic transition of manganites|A. S. Alexandrov,A. M. Bratkovsky,V. V. Kabanov###
(556147, 556148)
 Here we propose an explanation ofthe phase coexistence and describe the magnetization and resistivity ofmanganites near the ferromagnetic transition in the framework of CCD<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Phase coexistence and resistivity near the ferromagnetic transition of manganites|A. S. Alexandrov,A. M. Bratkovsky,V. V. Kabanov###
(556150, 556150)
 Here we propose an explanation ofthe phase coexistence and describe the magnetization and resistivity ofmanganites near the ferromagnetic transition in the framework of CCD<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HgCr2S4
###Colossal magnetocapacitance and colossal magnetoresistance in HgCr2S4|S. Weber,P. Lunkenheimer,R. Fichtl,J. Hemberger,V. Tsurkan,A. Loidl###
(556238, 556242)
Colossal magnetocapacitance and colossal magnetoresistance in HgCr2S4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 80, 'K', 2],[166.0, 70, 'K', 3],[188.0, 5, 'T', 4]

HgCr2S4
###Colossal magnetocapacitance and colossal magnetoresistance in HgCr2S4|S. Weber,P. Lunkenheimer,R. Fichtl,J. Hemberger,V. Tsurkan,A. Loidl###
(556280, 556284)
 We present a detailed study of the dielectric and charge transport propertiesof the antiferromagnetic cubic spinel HgCr2S4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 80, 'K', 1],[124.0, 70, 'K', 2],[146.0, 5, 'T', 3]

CdCr2S4
###Colossal magnetocapacitance and colossal magnetoresistance in HgCr2S4|S. Weber,P. Lunkenheimer,R. Fichtl,J. Hemberger,V. Tsurkan,A. Loidl###
(556300, 556304)
 Similar to the findings inferromagnetic CdCr2S4, the dielectric constant of HgCr2S4 becomes stronglyenhanced in the region below 60 - 80 K, which can be ascribed to polarrelaxational dynamics triggered by the onset of ferromagnetic correlations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 80, 'K', 0],[104.0, 70, 'K', 1],[126.0, 5, 'T', 2]

HgCr2S4
###Colossal magnetocapacitance and colossal magnetoresistance in HgCr2S4|S. Weber,P. Lunkenheimer,R. Fichtl,J. Hemberger,V. Tsurkan,A. Loidl###
(556315, 556319)
 Similar to the findings inferromagnetic CdCr2S4, the dielectric constant of HgCr2S4 becomes stronglyenhanced in the region below 60 - 80 K, which can be ascribed to polarrelaxational dynamics triggered by the onset of ferromagnetic correlations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 80, 'K', 0],[89.0, 70, 'K', 1],[111.0, 5, 'T', 2]

In
###Colossal magnetocapacitance and colossal magnetoresistance in HgCr2S4|S. Weber,P. Lunkenheimer,R. Fichtl,J. Hemberger,V. Tsurkan,A. Loidl###
(556374, 556374)
 Inaddition, the observation of polarization hysteresis curves indicates thedevelopment of ferroelectric order below about 70 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 80, 'K', 1],[34.0, 70, 'K', 0],[56.0, 5, 'T', 1]

V
###Anisotropic magnetoresistance and anisotropic tunneling magnetoresistance due to quantum interference in ferromagnetic metal break junctions|Kirill I. Bolotin,Ferdinand Kuemmeth,D. C. Ralph###
(556657, 556657)
 The pattern ofmagnetoresistance is sensitive to changes in bias on a scale of a few m<missing VAR>V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 25, '%', 1]

O
###Hyperfine interaction and magnetoresistance in organic semiconductors|Y. Sheng,D. T. Nguyen,G. Veeraraghavan,Ö. Mermer,M. Wohlgenannt,U. Scherf###
(556742, 556742)
 We explore the possibility that hyperfine interaction causes the recentlydiscovered organic magnetoresistance (OMAR) effect.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Hyperfine interaction and magnetoresistance in organic semiconductors|Y. Sheng,D. T. Nguyen,G. Veeraraghavan,Ö. Mermer,M. Wohlgenannt,U. Scherf###
(556898, 556898)
 By varying the injection efficiency for minoritycarriers in the devices, we show experimentally that OMAR is only weaklydependent on the ratio between excitons formed and carriers injected, likelyexcluding any excitonic effect as the origin of OMAR.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Hyperfine interaction and magnetoresistance in organic semiconductors|Y. Sheng,D. T. Nguyen,G. Veeraraghavan,Ö. Mermer,M. Wohlgenannt,U. Scherf###
(556950, 556950)
 By varying the injection efficiency for minoritycarriers in the devices, we show experimentally that OMAR is only weaklydependent on the ratio between excitons formed and carriers injected, likelyexcluding any excitonic effect as the origin of OMAR.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###Effect of the shape anisotropy on the magnetic configuration of (Ga,Mn)As and its evolution with temperature|K. Hamaya,T. Taniyama,T. Koike,Y. Yamazaki###
(556985, 556985)
Effect of the shape anisotropy on the magnetic configuration of (Ga,Mn)As and its evolution with temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Effect of the shape anisotropy on the magnetic configuration of (Ga,Mn)As and its evolution with temperature|K. Hamaya,T. Taniyama,T. Koike,Y. Yamazaki###
(556987, 556987)
Effect of the shape anisotropy on the magnetic configuration of (Ga,Mn)As and its evolution with temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Effect of the shape anisotropy on the magnetic configuration of (Ga,Mn)As and its evolution with temperature|K. Hamaya,T. Taniyama,T. Koike,Y. Yamazaki###
(556989, 556989)
Effect of the shape anisotropy on the magnetic configuration of (Ga,Mn)As and its evolution with temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###Effect of the shape anisotropy on the magnetic configuration of (Ga,Mn)As and its evolution with temperature|K. Hamaya,T. Taniyama,T. Koike,Y. Yamazaki###
(557038, 557038)
 We study the effect of the shape anisotropy on the magnetic domainconfigurations of a ferromagnetic semiconductor (Ga,Mn)As/GaAs(001) epitaxialwire as a function of temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Effect of the shape anisotropy on the magnetic configuration of (Ga,Mn)As and its evolution with temperature|K. Hamaya,T. Taniyama,T. Koike,Y. Yamazaki###
(557040, 557040)
 We study the effect of the shape anisotropy on the magnetic domainconfigurations of a ferromagnetic semiconductor (Ga,Mn)As/GaAs(001) epitaxialwire as a function of temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###Effect of the shape anisotropy on the magnetic configuration of (Ga,Mn)As and its evolution with temperature|K. Hamaya,T. Taniyama,T. Koike,Y. Yamazaki###
(557222, 557222)
 Thisinformation about the shape anisotropy provides a practical means of designingnanostructured spin electronic devices using (Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Effect of the shape anisotropy on the magnetic configuration of (Ga,Mn)As and its evolution with temperature|K. Hamaya,T. Taniyama,T. Koike,Y. Yamazaki###
(557224, 557224)
 Thisinformation about the shape anisotropy provides a practical means of designingnanostructured spin electronic devices using (Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Effect of the shape anisotropy on the magnetic configuration of (Ga,Mn)As and its evolution with temperature|K. Hamaya,T. Taniyama,T. Koike,Y. Yamazaki###
(557226, 557226)
 Thisinformation about the shape anisotropy provides a practical means of designingnanostructured spin electronic devices using (Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Quantum dot with ferromagnetic leads: a density-matrix renormalization group study|C. J. Gazza,M. E. Torio,J. A. Riera###
(557572, 557572)
 In this case we are able to estimate thelength of the Kondo cloud, and to relate its behavior to that suppression.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiO
###Emergence of half-metallicity in suspended NiO chains|David Jacob,J. Fernández-Rossier,J. J. Palacios###
(557701, 557702)
Emergence of half-metallicity in suspended NiO chains.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiO
###Emergence of half-metallicity in suspended NiO chains|David Jacob,J. Fernández-Rossier,J. J. Palacios###
(557725, 557726)
 Contrary to the antiferromagnetic and insulating character of bulk NiO,one-dimensional chains of this material can become half-metallic due to thelower coordination of their atoms.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiO
###Emergence of half-metallicity in suspended NiO chains|David Jacob,J. Fernández-Rossier,J. J. Palacios###
(557799, 557800)
 Here we present ab initio electronicstructure and quantum transport calculations of ideal infinitely long NiOchains and of more realistic short ones suspended between Ni electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Emergence of half-metallicity in suspended NiO chains|David Jacob,J. Fernández-Rossier,J. J. Palacios###
(557821, 557821)
 Here we present ab initio electronicstructure and quantum transport calculations of ideal infinitely long NiOchains and of more realistic short ones suspended between Ni electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La1-x
###Visualizing high-temperature spin dynamics in La1-xCaxMnO3 from a mapping of EPR linewidth and g factor|Y. Liu,S. L. Wan,X. G. Li###
(557909, 557912)
Visualizing high-temperature spin dynamics in La1-xCaxMnO3 from a mapping of EPR linewidth and g<missing VAR> factor.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[108.0, 1, ',', 2],[111.0, 2, ',', 2],[115.0, 3, ',', 2],[118.0, 4, ',', 2],[121.0, 5, ',', 2],[124.0, 6, ',', 2]

MnO3
###Visualizing high-temperature spin dynamics in La1-xCaxMnO3 from a mapping of EPR linewidth and g factor|Y. Liu,S. L. Wan,X. G. Li###
(557914, 557916)
Visualizing high-temperature spin dynamics in La1-xCaxMnO3 from a mapping of EPR linewidth and g<missing VAR> factor.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 1, ',', 2],[107.0, 2, ',', 2],[111.0, 3, ',', 2],[114.0, 4, ',', 2],[117.0, 5, ',', 2],[120.0, 6, ',', 2]

La1-x
###Visualizing high-temperature spin dynamics in La1-xCaxMnO3 from a mapping of EPR linewidth and g factor|Y. Liu,S. L. Wan,X. G. Li###
(557988, 557991)
, g<missing VAR> factor, linewidth, and intensity on powder samples ofLa1-xCaxMnO3 at the commensurate carrier concentrations of x<missing VAR>  N/8 (N  1, 2,3, 4, 5, 6, and 7).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[29.0, 1, ',', 0],[32.0, 2, ',', 0],[36.0, 3, ',', 0],[39.0, 4, ',', 0],[42.0, 5, ',', 0],[45.0, 6, ',', 0]

MnO3
###Visualizing high-temperature spin dynamics in La1-xCaxMnO3 from a mapping of EPR linewidth and g factor|Y. Liu,S. L. Wan,X. G. Li###
(557993, 557995)
, g<missing VAR> factor, linewidth, and intensity on powder samples ofLa1-xCaxMnO3 at the commensurate carrier concentrations of x<missing VAR>  N/8 (N  1, 2,3, 4, 5, 6, and 7).
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 1, ',', 0],[28.0, 2, ',', 0],[32.0, 3, ',', 0],[35.0, 4, ',', 0],[38.0, 5, ',', 0],[41.0, 6, ',', 0]

N
###Visualizing high-temperature spin dynamics in La1-xCaxMnO3 from a mapping of EPR linewidth and g factor|Y. Liu,S. L. Wan,X. G. Li###
(558012, 558012)
, g<missing VAR> factor, linewidth, and intensity on powder samples ofLa1-xCaxMnO3 at the commensurate carrier concentrations of x<missing VAR>  N/8 (N  1, 2,3, 4, 5, 6, and 7).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 1, ',', 0],[11.0, 2, ',', 0],[15.0, 3, ',', 0],[18.0, 4, ',', 0],[21.0, 5, ',', 0],[24.0, 6, ',', 0]

N
###Visualizing high-temperature spin dynamics in La1-xCaxMnO3 from a mapping of EPR linewidth and g factor|Y. Liu,S. L. Wan,X. G. Li###
(558017, 558017)
, g<missing VAR> factor, linewidth, and intensity on powder samples ofLa1-xCaxMnO3 at the commensurate carrier concentrations of x<missing VAR>  N/8 (N  1, 2,3, 4, 5, 6, and 7).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 1, ',', 0],[6.0, 2, ',', 0],[10.0, 3, ',', 0],[13.0, 4, ',', 0],[16.0, 5, ',', 0],[19.0, 6, ',', 0]

C
###Visualizing high-temperature spin dynamics in La1-xCaxMnO3 from a mapping of EPR linewidth and g factor|Y. Liu,S. L. Wan,X. G. Li###
(558100, 558100)
 We demonstrate that the mapping of EPR parameters offers apowerful tool to investigate high-temperature spin dynamics in the phasediagram of colossal magnetoresistance (CMR) manganites.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 1, ',', 1],[77.0, 2, ',', 1],[73.0, 3, ',', 1],[70.0, 4, ',', 1],[67.0, 5, ',', 1],[64.0, 6, ',', 1]

C
###Visualizing high-temperature spin dynamics in La1-xCaxMnO3 from a mapping of EPR linewidth and g factor|Y. Liu,S. L. Wan,X. G. Li###
(558144, 558144)
 Our results convincethat the spin-spin relaxation mechanism should dominate the high-temperatureparamagnetic regime in CMR manganites.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 1, ',', 2],[121.0, 2, ',', 2],[117.0, 3, ',', 2],[114.0, 4, ',', 2],[111.0, 5, ',', 2],[108.0, 6, ',', 2]

N
###Suppression of superconductivity due to non-perturbative saddle points in the nonlinear $σ$-model|D. A. Pesin,A. V. Andreev###
(558223, 558223)
 We study superconductivity suppression due to thermal fluctuations indisordered wires using the replica nonlinear sigma-model (NL<missing VAR>sigma M).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Suppression of superconductivity due to non-perturbative saddle points in the nonlinear $σ$-model|D. A. Pesin,A. V. Andreev###
(558295, 558295)
 These fluctuations aredescribed by saddle points in NL<missing VAR>sigma M<missing VAR> and cannot be treated within theGinzburg-Landau approach.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Quantum Transport with Spin Dephasing: A Nonequilibrium Green's Function Approach|Ahmet Ali Yanik,Gerhard Klimeck,Supriyo Datta###
(558434, 558434)
 A quantum transport model incorporating spin scattering processes ispresented using the non-equilibrium Greens<missing VAR> function (NEGF) formalism withinthe self-consistent Born approximation.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Quantum Transport with Spin Dephasing: A Nonequilibrium Green's Function Approach|Ahmet Ali Yanik,Gerhard Klimeck,Supriyo Datta###
(558437, 558437)
 A quantum transport model incorporating spin scattering processes ispresented using the non-equilibrium Greens<missing VAR> function (NEGF) formalism withinthe self-consistent Born approximation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pr0.65Ca0.28Sr0.07MnO3
###Scaling of THz-conductivity at metal-insulator transition in doped manganites|A. Pimenov,M. Biberacher,D. Ivannikov,A. Loidl,A. A. Mukhin,Yu. G. Goncharov,A. M. Balbashov###
(558678, 558686)
 Magnetic field and temperature dependence of the Terahertz conductivity andpermittivity of the colossal magnetoresistance manganitePr0.65Ca0.28Sr0.07MnO3 (PCSM<missing VAR>O) is investigated approaching themetal-to-insulator transition (MIT) from the insulating side.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.05600000000000001,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.014000000000000002,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PCS
###Scaling of THz-conductivity at metal-insulator transition in doped manganites|A. Pimenov,M. Biberacher,D. Ivannikov,A. Loidl,A. A. Mukhin,Yu. G. Goncharov,A. M. Balbashov###
(558689, 558691)
 Magnetic field and temperature dependence of the Terahertz conductivity andpermittivity of the colossal magnetoresistance manganitePr0.65Ca0.28Sr0.07MnO3 (PCSM<missing VAR>O) is investigated approaching themetal-to-insulator transition (MIT) from the insulating side.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Scaling of THz-conductivity at metal-insulator transition in doped manganites|A. Pimenov,M. Biberacher,D. Ivannikov,A. Loidl,A. A. Mukhin,Yu. G. Goncharov,A. M. Balbashov###
(558693, 558693)
 Magnetic field and temperature dependence of the Terahertz conductivity andpermittivity of the colossal magnetoresistance manganitePr0.65Ca0.28Sr0.07MnO3 (PCSM<missing VAR>O) is investigated approaching themetal-to-insulator transition (MIT) from the insulating side.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Scaling of THz-conductivity at metal-insulator transition in doped manganites|A. Pimenov,M. Biberacher,D. Ivannikov,A. Loidl,A. A. Mukhin,Yu. G. Goncharov,A. M. Balbashov###
(558728, 558728)
 In thecharge-ordered state of PCSM<missing VAR>O both conductivity and dielectric permittivityincrease as function of magnetic field and temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PCS
###Scaling of THz-conductivity at metal-insulator transition in doped manganites|A. Pimenov,M. Biberacher,D. Ivannikov,A. Loidl,A. A. Mukhin,Yu. G. Goncharov,A. M. Balbashov###
(558741, 558743)
 In thecharge-ordered state of PCSM<missing VAR>O both conductivity and dielectric permittivityincrease as function of magnetic field and temperature.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Scaling of THz-conductivity at metal-insulator transition in doped manganites|A. Pimenov,M. Biberacher,D. Ivannikov,A. Loidl,A. A. Mukhin,Yu. G. Goncharov,A. M. Balbashov###
(558745, 558745)
 In thecharge-ordered state of PCSM<missing VAR>O both conductivity and dielectric permittivityincrease as function of magnetic field and temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La1-xSr
###Scaling of THz-conductivity at metal-insulator transition in doped manganites|A. Pimenov,M. Biberacher,D. Ivannikov,A. Loidl,A. A. Mukhin,Yu. G. Goncharov,A. M. Balbashov###
(558833, 558837)
 Similar scaling is alsoseen in La1-xSrx<missing VAR>MnO3 for different doping levels.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

MnO3
###Scaling of THz-conductivity at metal-insulator transition in doped manganites|A. Pimenov,M. Biberacher,D. Ivannikov,A. Loidl,A. A. Mukhin,Yu. G. Goncharov,A. M. Balbashov###
(558839, 558841)
 Similar scaling is alsoseen in La1-xSrx<missing VAR>MnO3 for different doping levels.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Electronic Aharonov-Bohm Effect Induced by Quantum Vibrations|R. I. Shekhter,L. Y. Gorelik,L. I. Glazman,M. Jonson###
(559176, 559176)
 Mechanical displacements of a nanoelectromechanical system (NEMS) shift theelectron trajectories and hence perturb phase coherent charge transport throughthe device.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Electronic Aharonov-Bohm Effect Induced by Quantum Vibrations|R. I. Shekhter,L. Y. Gorelik,L. I. Glazman,M. Jonson###
(559179, 559179)
 Mechanical displacements of a nanoelectromechanical system (NEMS) shift theelectron trajectories and hence perturb phase coherent charge transport throughthe device.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Electronic Aharonov-Bohm Effect Induced by Quantum Vibrations|R. I. Shekhter,L. Y. Gorelik,L. I. Glazman,M. Jonson###
(559266, 559266)
 In particular, we demonstrate that quantum vibrations of a suspendedcarbon nanotube result in a positive nanotube magnetoresistance, whichdecreases slowly with the increase of temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFeB/MgO/CoFeB
###Giant tunnel magnetoresistance and high annealing stability in CoFeB/MgO/CoFeB magnetic tunnel junctions with synthetic pinned layer|Young Min Lee,Jun Hayakawa,Shoji Ikeda,Fumihiro Matsukura,Hideo Ohno###
(559377, 559386)
Giant tunnel magnetoresistance and high annealing stability in CoFeB/MgO/CoFeB magnetic tunnel junctions with synthetic pinned layer.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[149.0, 361, '%', 2],[156.0, 425, 'C', 2],[198.0, 325, 'C', 2]

CoFeB
###Giant tunnel magnetoresistance and high annealing stability in CoFeB/MgO/CoFeB magnetic tunnel junctions with synthetic pinned layer|Young Min Lee,Jun Hayakawa,Shoji Ikeda,Fumihiro Matsukura,Hideo Ohno###
(559434, 559436)
 We investigated the relationship between tunnel magnetoresistance (TMR) ratioand the crystallization of CoFeB layers through annealing in magnetic tunneljunctions (MTJs) with MgO barriers that had CoFe/Ru/CoFeB synthetic ferrimagnetpinned layers with varying Ru spacer thickness (t<missing VAR>Ru).
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 361, '%', 1],[106.0, 425, 'C', 1],[148.0, 325, 'C', 1]

MgO
###Giant tunnel magnetoresistance and high annealing stability in CoFeB/MgO/CoFeB magnetic tunnel junctions with synthetic pinned layer|Young Min Lee,Jun Hayakawa,Shoji Ikeda,Fumihiro Matsukura,Hideo Ohno###
(559461, 559462)
 We investigated the relationship between tunnel magnetoresistance (TMR) ratioand the crystallization of CoFeB layers through annealing in magnetic tunneljunctions (MTJs) with MgO barriers that had CoFe/Ru/CoFeB synthetic ferrimagnetpinned layers with varying Ru spacer thickness (t<missing VAR>Ru).
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 361, '%', 1],[80.0, 425, 'C', 1],[122.0, 325, 'C', 1]

CoFe/Ru/CoFeB
###Giant tunnel magnetoresistance and high annealing stability in CoFeB/MgO/CoFeB magnetic tunnel junctions with synthetic pinned layer|Young Min Lee,Jun Hayakawa,Shoji Ikeda,Fumihiro Matsukura,Hideo Ohno###
(559470, 559477)
 We investigated the relationship between tunnel magnetoresistance (TMR) ratioand the crystallization of CoFeB layers through annealing in magnetic tunneljunctions (MTJs) with MgO barriers that had CoFe/Ru/CoFeB synthetic ferrimagnetpinned layers with varying Ru spacer thickness (t<missing VAR>Ru).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[58.0, 361, '%', 1],[65.0, 425, 'C', 1],[107.0, 325, 'C', 1]

Ru
###Giant tunnel magnetoresistance and high annealing stability in CoFeB/MgO/CoFeB magnetic tunnel junctions with synthetic pinned layer|Young Min Lee,Jun Hayakawa,Shoji Ikeda,Fumihiro Matsukura,Hideo Ohno###
(559492, 559492)
 We investigated the relationship between tunnel magnetoresistance (TMR) ratioand the crystallization of CoFeB layers through annealing in magnetic tunneljunctions (MTJs) with MgO barriers that had CoFe/Ru/CoFeB synthetic ferrimagnetpinned layers with varying Ru spacer thickness (t<missing VAR>Ru).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 361, '%', 1],[50.0, 425, 'C', 1],[92.0, 325, 'C', 1]

Ru
###Giant tunnel magnetoresistance and high annealing stability in CoFeB/MgO/CoFeB magnetic tunnel junctions with synthetic pinned layer|Young Min Lee,Jun Hayakawa,Shoji Ikeda,Fumihiro Matsukura,Hideo Ohno###
(559500, 559500)
 We investigated the relationship between tunnel magnetoresistance (TMR) ratioand the crystallization of CoFeB layers through annealing in magnetic tunneljunctions (MTJs) with MgO barriers that had CoFe/Ru/CoFeB synthetic ferrimagnetpinned layers with varying Ru spacer thickness (t<missing VAR>Ru).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 361, '%', 1],[42.0, 425, 'C', 1],[84.0, 325, 'C', 1]

(Ta)
###Giant tunnel magnetoresistance and high annealing stability in CoFeB/MgO/CoFeB magnetic tunnel junctions with synthetic pinned layer|Young Min Lee,Jun Hayakawa,Shoji Ikeda,Fumihiro Matsukura,Hideo Ohno###
(559523, 559525)
 The TMR ratio increasedwith increasing annealing temperature (Ta) and t<missing VAR>Ru, reaching 361% at Ta  425C,whereas the TMR ratio of the MTJs with pinned layers without Ru spacersdecreased at Ta over 325C.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 361, '%', 0],[17.0, 425, 'C', 0],[59.0, 325, 'C', 0]

Ru
###Giant tunnel magnetoresistance and high annealing stability in CoFeB/MgO/CoFeB magnetic tunnel junctions with synthetic pinned layer|Young Min Lee,Jun Hayakawa,Shoji Ikeda,Fumihiro Matsukura,Hideo Ohno###
(559530, 559530)
 The TMR ratio increasedwith increasing annealing temperature (Ta) and t<missing VAR>Ru, reaching 361% at Ta  425C,whereas the TMR ratio of the MTJs with pinned layers without Ru spacersdecreased at Ta over 325C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 361, '%', 0],[12.0, 425, 'C', 0],[54.0, 325, 'C', 0]

Ta
###Giant tunnel magnetoresistance and high annealing stability in CoFeB/MgO/CoFeB magnetic tunnel junctions with synthetic pinned layer|Young Min Lee,Jun Hayakawa,Shoji Ikeda,Fumihiro Matsukura,Hideo Ohno###
(559540, 559540)
 The TMR ratio increasedwith increasing annealing temperature (Ta) and t<missing VAR>Ru, reaching 361% at Ta  425C,whereas the TMR ratio of the MTJs with pinned layers without Ru spacersdecreased at Ta over 325C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 361, '%', 0],[2.0, 425, 'C', 0],[44.0, 325, 'C', 0]

Ru
###Giant tunnel magnetoresistance and high annealing stability in CoFeB/MgO/CoFeB magnetic tunnel junctions with synthetic pinned layer|Young Min Lee,Jun Hayakawa,Shoji Ikeda,Fumihiro Matsukura,Hideo Ohno###
(559572, 559572)
 The TMR ratio increasedwith increasing annealing temperature (Ta) and t<missing VAR>Ru, reaching 361% at Ta  425C,whereas the TMR ratio of the MTJs with pinned layers without Ru spacersdecreased at Ta over 325C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 361, '%', 0],[30.0, 425, 'C', 0],[12.0, 325, 'C', 0]

Ta
###Giant tunnel magnetoresistance and high annealing stability in CoFeB/MgO/CoFeB magnetic tunnel junctions with synthetic pinned layer|Young Min Lee,Jun Hayakawa,Shoji Ikeda,Fumihiro Matsukura,Hideo Ohno###
(559581, 559581)
 The TMR ratio increasedwith increasing annealing temperature (Ta) and t<missing VAR>Ru, reaching 361% at Ta  425C,whereas the TMR ratio of the MTJs with pinned layers without Ru spacersdecreased at Ta over 325C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 361, '%', 0],[39.0, 425, 'C', 0],[3.0, 325, 'C', 0]

CoFeB
###Giant tunnel magnetoresistance and high annealing stability in CoFeB/MgO/CoFeB magnetic tunnel junctions with synthetic pinned layer|Young Min Lee,Jun Hayakawa,Shoji Ikeda,Fumihiro Matsukura,Hideo Ohno###
(559614, 559616)
 Ruthenium spacers play an important role in formingan (001)-oriented bcc CoFeB pinned layer, resulting in a high TMR ratio throughannealing at high temperatures.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 361, '%', 1],[72.0, 425, 'C', 1],[30.0, 325, 'C', 1]

W
###Bandwidth-disorder phase diagram of half doped layered manganites|R. Mathieu,M. Uchida,Y. Kaneko,J. P. He,X. Z. Yu,R. Kumai,T. Arima,Y. Tomioka,A. Asamitsu,Y. Matsui,Y. Tokura###
(559712, 559712)
 Phase diagrams in the plane of r<missing VAR>A (the average ionic radius, related toone-electron bandwidth W) and sigma2 (the ionic radius variance,measuring the quenched disorder), or bandwidth-disorder phase diagrams,have been established for perovskite manganites, with three-dimensional (3D)Mn-O network.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Bandwidth-disorder phase diagram of half doped layered manganites|R. Mathieu,M. Uchida,Y. Kaneko,J. P. He,X. Z. Yu,R. Kumai,T. Arima,Y. Tomioka,A. Asamitsu,Y. Matsui,Y. Tokura###
(559778, 559778)
 Phase diagrams in the plane of r<missing VAR>A (the average ionic radius, related toone-electron bandwidth W) and sigma2 (the ionic radius variance,measuring the quenched disorder), or bandwidth-disorder phase diagrams,have been established for perovskite manganites, with three-dimensional (3D)Mn-O network.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Bandwidth-disorder phase diagram of half doped layered manganites|R. Mathieu,M. Uchida,Y. Kaneko,J. P. He,X. Z. Yu,R. Kumai,T. Arima,Y. Tomioka,A. Asamitsu,Y. Matsui,Y. Tokura###
(559780, 559780)
 Phase diagrams in the plane of r<missing VAR>A (the average ionic radius, related toone-electron bandwidth W) and sigma2 (the ionic radius variance,measuring the quenched disorder), or bandwidth-disorder phase diagrams,have been established for perovskite manganites, with three-dimensional (3D)Mn-O network.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Bandwidth-disorder phase diagram of half doped layered manganites|R. Mathieu,M. Uchida,Y. Kaneko,J. P. He,X. Z. Yu,R. Kumai,T. Arima,Y. Tomioka,A. Asamitsu,Y. Matsui,Y. Tokura###
(559827, 559827)
 Here we establish the intrinsic bandwidth-disorder phase diagramof half-doped layered manganites with the two-dimensional (2D) Mn-O network,examining in detail the mother state of the colossal magnetoresistance(CMR) phenomenon in crystals without ferromagnetic instability.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Bandwidth-disorder phase diagram of half doped layered manganites|R. Mathieu,M. Uchida,Y. Kaneko,J. P. He,X. Z. Yu,R. Kumai,T. Arima,Y. Tomioka,A. Asamitsu,Y. Matsui,Y. Tokura###
(559829, 559829)
 Here we establish the intrinsic bandwidth-disorder phase diagramof half-doped layered manganites with the two-dimensional (2D) Mn-O network,examining in detail the mother state of the colossal magnetoresistance(CMR) phenomenon in crystals without ferromagnetic instability.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Bandwidth-disorder phase diagram of half doped layered manganites|R. Mathieu,M. Uchida,Y. Kaneko,J. P. He,X. Z. Yu,R. Kumai,T. Arima,Y. Tomioka,A. Asamitsu,Y. Matsui,Y. Tokura###
(559857, 559857)
 Here we establish the intrinsic bandwidth-disorder phase diagramof half-doped layered manganites with the two-dimensional (2D) Mn-O network,examining in detail the mother state of the colossal magnetoresistance(CMR) phenomenon in crystals without ferromagnetic instability.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BiFeO3
###Tunnel magnetoresistance and robust room temperature exchange bias with multiferroic BiFeO3 epitaxial thin films|H. Bea,M. Bibes,S. Cherifi,F. Nolting,B. Warot-Fonrose,S. Fusil,G. Herranz,C. Deranlot,E. Jacquet,K. Bouzehouane,A. Barthelemy###
(559956, 559959)
Tunnel magnetoresistance and robust room temperature exchange bias with multiferroic BiFeO3 epitaxial thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 30, '%', 3]

BiFeO3
###Tunnel magnetoresistance and robust room temperature exchange bias with multiferroic BiFeO3 epitaxial thin films|H. Bea,M. Bibes,S. Cherifi,F. Nolting,B. Warot-Fonrose,S. Fusil,G. Herranz,C. Deranlot,E. Jacquet,K. Bouzehouane,A. Barthelemy###
(559982, 559985)
 We report on the functionalization of multiferroic BiFeO3 epitaxial films forspintronics.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 30, '%', 2]

BiFeO3
###Tunnel magnetoresistance and robust room temperature exchange bias with multiferroic BiFeO3 epitaxial thin films|H. Bea,M. Bibes,S. Cherifi,F. Nolting,B. Warot-Fonrose,S. Fusil,G. Herranz,C. Deranlot,E. Jacquet,K. Bouzehouane,A. Barthelemy###
(560022, 560025)
 A first example is provided by the use of ultrathin layers ofBiFeO3 as tunnel barriers in magnetic tunnel junctions with La2/3Sr1/3MnO3 andCo electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 30, '%', 1]

La2
###Tunnel magnetoresistance and robust room temperature exchange bias with multiferroic BiFeO3 epitaxial thin films|H. Bea,M. Bibes,S. Cherifi,F. Nolting,B. Warot-Fonrose,S. Fusil,G. Herranz,C. Deranlot,E. Jacquet,K. Bouzehouane,A. Barthelemy###
(560043, 560044)
 A first example is provided by the use of ultrathin layers ofBiFeO3 as tunnel barriers in magnetic tunnel junctions with La2/3Sr1/3MnO3 andCo electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 30, '%', 1]

Sr1
###Tunnel magnetoresistance and robust room temperature exchange bias with multiferroic BiFeO3 epitaxial thin films|H. Bea,M. Bibes,S. Cherifi,F. Nolting,B. Warot-Fonrose,S. Fusil,G. Herranz,C. Deranlot,E. Jacquet,K. Bouzehouane,A. Barthelemy###
(560047, 560048)
 A first example is provided by the use of ultrathin layers ofBiFeO3 as tunnel barriers in magnetic tunnel junctions with La2/3Sr1/3MnO3 andCo electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 30, '%', 1]

MnO3
###Tunnel magnetoresistance and robust room temperature exchange bias with multiferroic BiFeO3 epitaxial thin films|H. Bea,M. Bibes,S. Cherifi,F. Nolting,B. Warot-Fonrose,S. Fusil,G. Herranz,C. Deranlot,E. Jacquet,K. Bouzehouane,A. Barthelemy###
(560051, 560053)
 A first example is provided by the use of ultrathin layers ofBiFeO3 as tunnel barriers in magnetic tunnel junctions with La2/3Sr1/3MnO3 andCo electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 30, '%', 1]

Co
###Tunnel magnetoresistance and robust room temperature exchange bias with multiferroic BiFeO3 epitaxial thin films|H. Bea,M. Bibes,S. Cherifi,F. Nolting,B. Warot-Fonrose,S. Fusil,G. Herranz,C. Deranlot,E. Jacquet,K. Bouzehouane,A. Barthelemy###
(560058, 560058)
 A first example is provided by the use of ultrathin layers ofBiFeO3 as tunnel barriers in magnetic tunnel junctions with La2/3Sr1/3MnO3 andCo electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 30, '%', 1]

In
###Tunnel magnetoresistance and robust room temperature exchange bias with multiferroic BiFeO3 epitaxial thin films|H. Bea,M. Bibes,S. Cherifi,F. Nolting,B. Warot-Fonrose,S. Fusil,G. Herranz,C. Deranlot,E. Jacquet,K. Bouzehouane,A. Barthelemy###
(560063, 560063)
 In such structures, a positive tunnel magnetoresistance up to30% is obtained at low temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 30, '%', 0]

BiFeO3
###Tunnel magnetoresistance and robust room temperature exchange bias with multiferroic BiFeO3 epitaxial thin films|H. Bea,M. Bibes,S. Cherifi,F. Nolting,B. Warot-Fonrose,S. Fusil,G. Herranz,C. Deranlot,E. Jacquet,K. Bouzehouane,A. Barthelemy###
(560124, 560127)
 A second example is the exploitation of theantiferromagnetic spin structure of a BiFeO3 film to induce a sizeable (60 Oe)exchange bias on a ferromagnetic film of CoFeB, at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 30, '%', 1]

CoFeB
###Tunnel magnetoresistance and robust room temperature exchange bias with multiferroic BiFeO3 epitaxial thin films|H. Bea,M. Bibes,S. Cherifi,F. Nolting,B. Warot-Fonrose,S. Fusil,G. Herranz,C. Deranlot,E. Jacquet,K. Bouzehouane,A. Barthelemy###
(560160, 560162)
 A second example is the exploitation of theantiferromagnetic spin structure of a BiFeO3 film to induce a sizeable (60 Oe)exchange bias on a ferromagnetic film of CoFeB, at room temperature.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 30, '%', 1]

GaMnAs/GaAs/GaMnAs
###Quantum theory of tunneling magnetoresistance in GaMnAs/GaAs/GaMnAs heterostructures|Alireza Saffarzadeh,Ali A. Shokri###
(560229, 560238)
Quantum theory of tunneling magnetoresistance in GaMnAs/GaAs/GaMnAs heterostructures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[94.0, 65, '%', 2],[120.0, 0.565, 'nm', 2]

GaMnAs/GaAs/GaMnAs
###Quantum theory of tunneling magnetoresistance in GaMnAs/GaAs/GaMnAs heterostructures|Alireza Saffarzadeh,Ali A. Shokri###
(560307, 560316)
 Using a quantum theory including spin-splitting effect in diluted magneticsemiconductors, we study the dependence of tunneling magnetoresistance (TMR) onbarrier thickness, temperature and applied voltage in GaMnAs/GaAs/GaMnAsheterostructures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[16.0, 65, '%', 1],[42.0, 0.565, 'nm', 1]

GaAs
###Quantum theory of tunneling magnetoresistance in GaMnAs/GaAs/GaMnAs heterostructures|Alireza Saffarzadeh,Ali A. Shokri###
(560351, 560352)
 TMR ratios more than 65% are obtained at zero temperature,when one GaAs monolayer (approx 0.565 nm) is used as a tunnel barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 65, '%', 0],[6.0, 0.565, 'nm', 0]

AlGaAs/GaAs
###From semiclassical transport to quantum Hall effect under low-field Landau quantization|D. R. Hang,C. F. Huang,Y. W. Zhang,H. D. Yeh,J. C. Hsiao,H. L. Pang###
(560552, 560557)
 The crossover from the semiclassical transport to quantum Hall effect isstudied by examining a two-dimensional electron system in an AlGaAs/GaAsheterostructure.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

H
###From semiclassical transport to quantum Hall effect under low-field Landau quantization|D. R. Hang,C. F. Huang,Y. W. Zhang,H. D. Yeh,J. C. Hsiao,H. L. Pang###
(560595, 560595)
 By probing the magneto-oscillations, it is shown that thesemiclassical Shubnikov-de Haas (SdH) formulation can be valid even when theminima of the longitudinal resistivity approach zero.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###From semiclassical transport to quantum Hall effect under low-field Landau quantization|D. R. Hang,C. F. Huang,Y. W. Zhang,H. D. Yeh,J. C. Hsiao,H. L. Pang###
(560646, 560646)
 The extension of theapplicable range of the SdH theory could be due to the damping effectsresulting from disorder and temperature.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###From semiclassical transport to quantum Hall effect under low-field Landau quantization|D. R. Hang,C. F. Huang,Y. W. Zhang,H. D. Yeh,J. C. Hsiao,H. L. Pang###
(560734, 560734)
 From our study, it isimportant to include the positive magnetoresistance to refine the SdH theory.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WN
###Electron-electron interaction in carbon nanostructures|A. I. Romanenko,O. B. Anikeeva,T. I. Buryakov,E. N. Tkachev,A. V. Okotrub,V. L. Kuznetsov,A. N. Usoltseva,A. S. Kotosonov###
(560865, 560866)
 Three types of carbonmaterials arc-produced multiwalled carbon nanotubes (arc-M<missing VAR>WNTs), CVD<missing VAR>-producedcatalytic multiwalled carbon nanotubes (c-MWNTs) and pyrolytic carbon were usedfor investigation.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 0.1, 'for', 1],[93.0, 0, 'for', 1]

CV
###Electron-electron interaction in carbon nanostructures|A. I. Romanenko,O. B. Anikeeva,T. I. Buryakov,E. N. Tkachev,A. V. Okotrub,V. L. Kuznetsov,A. N. Usoltseva,A. S. Kotosonov###
(560871, 560872)
 Three types of carbonmaterials arc-produced multiwalled carbon nanotubes (arc-M<missing VAR>WNTs), CVD<missing VAR>-producedcatalytic multiwalled carbon nanotubes (c-MWNTs) and pyrolytic carbon were usedfor investigation.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 0.1, 'for', 1],[87.0, 0, 'for', 1]

WN
###Electron-electron interaction in carbon nanostructures|A. I. Romanenko,O. B. Anikeeva,T. I. Buryakov,E. N. Tkachev,A. V. Okotrub,V. L. Kuznetsov,A. N. Usoltseva,A. S. Kotosonov###
(560890, 560891)
 Three types of carbonmaterials arc-produced multiwalled carbon nanotubes (arc-M<missing VAR>WNTs), CVD<missing VAR>-producedcatalytic multiwalled carbon nanotubes (c-MWNTs) and pyrolytic carbon were usedfor investigation.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 0.1, 'for', 1],[68.0, 0, 'for', 1]

WN
###Electron-electron interaction in carbon nanostructures|A. I. Romanenko,O. B. Anikeeva,T. I. Buryakov,E. N. Tkachev,A. V. Okotrub,V. L. Kuznetsov,A. N. Usoltseva,A. S. Kotosonov###
(560926, 560927)
 We found that lambdac<missing VAR>0.2 for arc-M<missing VAR>WNTs (before andafter bromination treatment); lambdac<missing VAR>  0.1 for pyrolytic graphite;lambdac<missing VAR> > 0 for c-MWNTs.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 0.1, 'for', 0],[32.0, 0, 'for', 0]

WN
###Electron-electron interaction in carbon nanostructures|A. I. Romanenko,O. B. Anikeeva,T. I. Buryakov,E. N. Tkachev,A. V. Okotrub,V. L. Kuznetsov,A. N. Usoltseva,A. S. Kotosonov###
(560964, 560965)
 We found that lambdac<missing VAR>0.2 for arc-M<missing VAR>WNTs (before andafter bromination treatment); lambdac<missing VAR>  0.1 for pyrolytic graphite;lambdac<missing VAR> > 0 for c-MWNTs.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 0.1, 'for', 0],[5.0, 0, 'for', 0]

MgO
###Dependence of tunnel magnetoresistance on ferromagnetic electrode materials in MgO-barrier magnetic tunnel junctions|Shoji Ikeda,Jun Hayakawa,Young Min Lee,Fumihiro Matsukura,Hideo Ohno###
(561043, 561044)
Dependence of tunnel magnetoresistance on ferromagnetic electrode materials in MgO-barrier magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 355, '%', 2],[236.0, 450, '%', 5],[243.0, 450, 'degree', 5]

MgO
###Dependence of tunnel magnetoresistance on ferromagnetic electrode materials in MgO-barrier magnetic tunnel junctions|Shoji Ikeda,Jun Hayakawa,Young Min Lee,Fumihiro Matsukura,Hideo Ohno###
(561090, 561091)
 We investigated the relationship between the tunnel magnetoresistance (TMR)ratio and the electrode structure in MgO-barrier magnetic tunnel junctions(MTJs).
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 355, '%', 1],[189.0, 450, '%', 4],[196.0, 450, 'degree', 4]

Co40Fe40B20
###Dependence of tunnel magnetoresistance on ferromagnetic electrode materials in MgO-barrier magnetic tunnel junctions|Shoji Ikeda,Jun Hayakawa,Young Min Lee,Fumihiro Matsukura,Hideo Ohno###
(561127, 561132)
 The TMR ratio in a MTJ with Co40Fe40B20 reference and free layersreached 355% at the post-deposition annealing temperature of Ta400 degree C.
Featurization terminated normally.
0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 355, '%', 0],[148.0, 450, '%', 3],[155.0, 450, 'degree', 3]

Ta400
###Dependence of tunnel magnetoresistance on ferromagnetic electrode materials in MgO-barrier magnetic tunnel junctions|Shoji Ikeda,Jun Hayakawa,Young Min Lee,Fumihiro Matsukura,Hideo Ohno###
(561162, 561163)
 The TMR ratio in a MTJ with Co40Fe40B20 reference and free layersreached 355% at the post-deposition annealing temperature of Ta400 degree C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 355, '%', 0],[117.0, 450, '%', 3],[124.0, 450, 'degree', 3]

C
###Dependence of tunnel magnetoresistance on ferromagnetic electrode materials in MgO-barrier magnetic tunnel junctions|Shoji Ikeda,Jun Hayakawa,Young Min Lee,Fumihiro Matsukura,Hideo Ohno###
(561167, 561167)
 The TMR ratio in a MTJ with Co40Fe40B20 reference and free layersreached 355% at the post-deposition annealing temperature of Ta400 degree C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 355, '%', 0],[113.0, 450, '%', 3],[120.0, 450, 'degree', 3]

Co50Fe50
###Dependence of tunnel magnetoresistance on ferromagnetic electrode materials in MgO-barrier magnetic tunnel junctions|Shoji Ikeda,Jun Hayakawa,Young Min Lee,Fumihiro Matsukura,Hideo Ohno###
(561173, 561176)
When Co50Fe50 or Co90Fe10 is used for the reference layer material, no high TMRratio was observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 355, '%', 1],[104.0, 450, '%', 2],[111.0, 450, 'degree', 2]

Co90Fe10
###Dependence of tunnel magnetoresistance on ferromagnetic electrode materials in MgO-barrier magnetic tunnel junctions|Shoji Ikeda,Jun Hayakawa,Young Min Lee,Fumihiro Matsukura,Hideo Ohno###
(561180, 561183)
When Co50Fe50 or Co90Fe10 is used for the reference layer material, no high TMRratio was observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0.9,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 355, '%', 1],[97.0, 450, '%', 2],[104.0, 450, 'degree', 2]

MgO
###Dependence of tunnel magnetoresistance on ferromagnetic electrode materials in MgO-barrier magnetic tunnel junctions|Shoji Ikeda,Jun Hayakawa,Young Min Lee,Fumihiro Matsukura,Hideo Ohno###
(561247, 561248)
 The key to have high TMR ratio is to have highly oriented(001) MgO barrier/CoFeB crystalline electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 355, '%', 2],[32.0, 450, '%', 1],[39.0, 450, 'degree', 1]

CoFeB
###Dependence of tunnel magnetoresistance on ferromagnetic electrode materials in MgO-barrier magnetic tunnel junctions|Shoji Ikeda,Jun Hayakawa,Young Min Lee,Fumihiro Matsukura,Hideo Ohno###
(561252, 561254)
 The key to have high TMR ratio is to have highly oriented(001) MgO barrier/CoFeB crystalline electrodes.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 355, '%', 2],[26.0, 450, '%', 1],[33.0, 450, 'degree', 1]

Ta
###Dependence of tunnel magnetoresistance on ferromagnetic electrode materials in MgO-barrier magnetic tunnel junctions|Shoji Ikeda,Jun Hayakawa,Young Min Lee,Fumihiro Matsukura,Hideo Ohno###
(561285, 561285)
 The highest TMR ratio obtainedso far is 450% at Ta  450 degree C in a pseudo spin-valve MTJ.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 355, '%', 3],[5.0, 450, '%', 0],[2.0, 450, 'degree', 0]

C
###Dependence of tunnel magnetoresistance on ferromagnetic electrode materials in MgO-barrier magnetic tunnel junctions|Shoji Ikeda,Jun Hayakawa,Young Min Lee,Fumihiro Matsukura,Hideo Ohno###
(561289, 561289)
 The highest TMR ratio obtainedso far is 450% at Ta  450 degree C in a pseudo spin-valve MTJ.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 355, '%', 3],[9.0, 450, '%', 0],[2.0, 450, 'degree', 0]

Co
###Thermally excited spin-current in metals with embedded ferromagnetic nanoclusters|O. Tsyplyatyev,O. Kashuba,V. I. Fal'ko###
(561763, 561763)
 Our theory explains the recent experiment on Co clusters incopper by S.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Thermally excited spin-current in metals with embedded ferromagnetic nanoclusters|O. Tsyplyatyev,O. Kashuba,V. I. Fal'ko###
(561774, 561774)
 Our theory explains the recent experiment on Co clusters incopper by S.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OP
###Thermally excited spin-current in metals with embedded ferromagnetic nanoclusters|O. Tsyplyatyev,O. Kashuba,V. I. Fal'ko###
(561792, 561793)
 Serrano-Guisan textitet al [Nature Materials AOP,doi10.1038/nmat1713 (2006)]<missing PERIOD>
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Magnetoresistivity Modulated Response in Bichromatic Microwave Irradiated Two Dimensional Electron Systems|Jesus Inarrea,Gloria Platero###
(562502, 562502)
 As a result the magnetoresisitivityresponse presents modulated pulses in the amplitude with a frequency offracw<missing VAR>1-w<missing VAR>22, whereas the main response oscillates withfracw1w22.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 2, ',', 0]

F
###Unconventional spin density wave in Bechgaard salt (TMTSF)2NO3|Mario Basletic,Bojana Korin-Hamzic,Kazumi Maki,Silvija Tomic###
(562824, 562824)
Unconventional spin density wave in Bechgaard salt (TMTSF)2NO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NO3
###Unconventional spin density wave in Bechgaard salt (TMTSF)2NO3|Mario Basletic,Bojana Korin-Hamzic,Kazumi Maki,Silvija Tomic###
(562827, 562829)
Unconventional spin density wave in Bechgaard salt (TMTSF)2NO3.
Featurization terminated normally.
0,0,0,0,0,0,0.25,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SF2NO3
###Unconventional spin density wave in Bechgaard salt (TMTSF)2NO3|Mario Basletic,Bojana Korin-Hamzic,Kazumi Maki,Silvija Tomic###
(562844, 562849)
 Among many Bechgaard salts, TMTSF2NO3 exhibits very anomalous low temperatureproperties.
Featurization terminated normally.
0,0,0,0,0,0,0.14285714285714285,0.42857142857142855,0.2857142857142857,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Unconventional spin density wave in Bechgaard salt (TMTSF)2NO3|Mario Basletic,Bojana Korin-Hamzic,Kazumi Maki,Silvija Tomic###
(562876, 562876)
 Unlike conventional spin density wave (SD<missing VAR>W), TMTSF2NO3 undergoesthe SD<missing VAR>W transition at TSDWapprox 9.5 K and the low temperaturequasiparticle excitations are gapless.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Unconventional spin density wave in Bechgaard salt (TMTSF)2NO3|Mario Basletic,Bojana Korin-Hamzic,Kazumi Maki,Silvija Tomic###
(562878, 562878)
 Unlike conventional spin density wave (SD<missing VAR>W), TMTSF2NO3 undergoesthe SD<missing VAR>W transition at TSDWapprox 9.5 K and the low temperaturequasiparticle excitations are gapless.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SF2NO3
###Unconventional spin density wave in Bechgaard salt (TMTSF)2NO3|Mario Basletic,Bojana Korin-Hamzic,Kazumi Maki,Silvija Tomic###
(562885, 562890)
 Unlike conventional spin density wave (SD<missing VAR>W), TMTSF2NO3 undergoesthe SD<missing VAR>W transition at TSDWapprox 9.5 K and the low temperaturequasiparticle excitations are gapless.
Featurization terminated normally.
0,0,0,0,0,0,0.14285714285714285,0.42857142857142855,0.2857142857142857,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Unconventional spin density wave in Bechgaard salt (TMTSF)2NO3|Mario Basletic,Bojana Korin-Hamzic,Kazumi Maki,Silvija Tomic###
(562897, 562897)
 Unlike conventional spin density wave (SD<missing VAR>W), TMTSF2NO3 undergoesthe SD<missing VAR>W transition at TSDWapprox 9.5 K and the low temperaturequasiparticle excitations are gapless.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Unconventional spin density wave in Bechgaard salt (TMTSF)2NO3|Mario Basletic,Bojana Korin-Hamzic,Kazumi Maki,Silvija Tomic###
(562899, 562899)
 Unlike conventional spin density wave (SD<missing VAR>W), TMTSF2NO3 undergoesthe SD<missing VAR>W transition at TSDWapprox 9.5 K and the low temperaturequasiparticle excitations are gapless.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Unconventional spin density wave in Bechgaard salt (TMTSF)2NO3|Mario Basletic,Bojana Korin-Hamzic,Kazumi Maki,Silvija Tomic###
(562908, 562908)
 Unlike conventional spin density wave (SD<missing VAR>W), TMTSF2NO3 undergoesthe SD<missing VAR>W transition at TSDWapprox 9.5 K and the low temperaturequasiparticle excitations are gapless.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Unconventional spin density wave in Bechgaard salt (TMTSF)2NO3|Mario Basletic,Bojana Korin-Hamzic,Kazumi Maki,Silvija Tomic###
(562913, 562913)
 Unlike conventional spin density wave (SD<missing VAR>W), TMTSF2NO3 undergoesthe SD<missing VAR>W transition at TSDWapprox 9.5 K and the low temperaturequasiparticle excitations are gapless.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SF2NO3
###Unconventional spin density wave in Bechgaard salt (TMTSF)2NO3|Mario Basletic,Bojana Korin-Hamzic,Kazumi Maki,Silvija Tomic###
(562947, 562952)
 Also, it is known that TMTSF2NO3 doesnot exhibit superconductivity even under pressure, while FISD<missing VAR>W is found inTMTSF2NO3 only for P8.5 kbar and B>20 T<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0.14285714285714285,0.42857142857142855,0.2857142857142857,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FIS
###Unconventional spin density wave in Bechgaard salt (TMTSF)2NO3|Mario Basletic,Bojana Korin-Hamzic,Kazumi Maki,Silvija Tomic###
(562972, 562974)
 Also, it is known that TMTSF2NO3 doesnot exhibit superconductivity even under pressure, while FISD<missing VAR>W is found inTMTSF2NO3 only for P8.5 kbar and B>20 T<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Unconventional spin density wave in Bechgaard salt (TMTSF)2NO3|Mario Basletic,Bojana Korin-Hamzic,Kazumi Maki,Silvija Tomic###
(562976, 562976)
 Also, it is known that TMTSF2NO3 doesnot exhibit superconductivity even under pressure, while FISD<missing VAR>W is found inTMTSF2NO3 only for P8.5 kbar and B>20 T<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SF2NO3
###Unconventional spin density wave in Bechgaard salt (TMTSF)2NO3|Mario Basletic,Bojana Korin-Hamzic,Kazumi Maki,Silvija Tomic###
(562988, 562993)
 Also, it is known that TMTSF2NO3 doesnot exhibit superconductivity even under pressure, while FISD<missing VAR>W is found inTMTSF2NO3 only for P8.5 kbar and B>20 T<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0.14285714285714285,0.42857142857142855,0.2857142857142857,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P8.5
###Unconventional spin density wave in Bechgaard salt (TMTSF)2NO3|Mario Basletic,Bojana Korin-Hamzic,Kazumi Maki,Silvija Tomic###
(562999, 563000)
 Also, it is known that TMTSF2NO3 doesnot exhibit superconductivity even under pressure, while FISD<missing VAR>W is found inTMTSF2NO3 only for P8.5 kbar and B>20 T<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Unconventional spin density wave in Bechgaard salt (TMTSF)2NO3|Mario Basletic,Bojana Korin-Hamzic,Kazumi Maki,Silvija Tomic###
(563006, 563006)
 Also, it is known that TMTSF2NO3 doesnot exhibit superconductivity even under pressure, while FISD<missing VAR>W is found inTMTSF2NO3 only for P8.5 kbar and B>20 T<missing VAR>.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SF2NO3
###Unconventional spin density wave in Bechgaard salt (TMTSF)2NO3|Mario Basletic,Bojana Korin-Hamzic,Kazumi Maki,Silvija Tomic###
(563052, 563057)
 Here we shall show that both theangle dependent magnetoresistance data and the nonlinear Hall resistance ofTMTSF2NO3 at ambient pressure are interpreted satisfactory in terms ofunconventional spin density wave (USD<missing VAR>W).
Featurization terminated normally.
0,0,0,0,0,0,0.14285714285714285,0.42857142857142855,0.2857142857142857,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

US
###Unconventional spin density wave in Bechgaard salt (TMTSF)2NO3|Mario Basletic,Bojana Korin-Hamzic,Kazumi Maki,Silvija Tomic###
(563087, 563088)
 Here we shall show that both theangle dependent magnetoresistance data and the nonlinear Hall resistance ofTMTSF2NO3 at ambient pressure are interpreted satisfactory in terms ofunconventional spin density wave (USD<missing VAR>W).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Unconventional spin density wave in Bechgaard salt (TMTSF)2NO3|Mario Basletic,Bojana Korin-Hamzic,Kazumi Maki,Silvija Tomic###
(563090, 563090)
 Here we shall show that both theangle dependent magnetoresistance data and the nonlinear Hall resistance ofTMTSF2NO3 at ambient pressure are interpreted satisfactory in terms ofunconventional spin density wave (USD<missing VAR>W).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFeB/MgO/CoFeB
###Effect of high annealing temperature on giant tunnel magnetoresistance ratio of CoFeB/MgO/CoFeB magnetic tunnel junctions|Jun Hayakawa,Shoji Ikeda,Young Min Lee,Fumihiro Matsukura,Hideo Ohno###
(563436, 563445)
Effect of high annealing temperature on giant tunnel magnetoresistance ratio of CoFeB/MgO/CoFeB magnetic tunnel junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[31.0, 472, '%', 1],[43.0, 804, '%', 1],[47.0, 5, 'K', 1],[89.0, 450, 'oC', 1],[169.0, 450, 'oC', 2]

(SV)
###Effect of high annealing temperature on giant tunnel magnetoresistance ratio of CoFeB/MgO/CoFeB magnetic tunnel junctions|Jun Hayakawa,Shoji Ikeda,Young Min Lee,Fumihiro Matsukura,Hideo Ohno###
(563502, 563505)
 We report tunnel magnetoresistance (TMR) ratios as high as 472% at roomtemperature and 804% at 5 K in pseudo-spin valve (SV) CoFeB/MgO/CoFeB magnetictunnel junctions (MTJs) annealed at 450oC, which is approaching thetheoretically predicted value.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 472, '%', 0],[14.0, 804, '%', 0],[10.0, 5, 'K', 0],[29.0, 450, 'oC', 0],[109.0, 450, 'oC', 1]

CoFeB/MgO/CoFeB
###Effect of high annealing temperature on giant tunnel magnetoresistance ratio of CoFeB/MgO/CoFeB magnetic tunnel junctions|Jun Hayakawa,Shoji Ikeda,Young Min Lee,Fumihiro Matsukura,Hideo Ohno###
(563507, 563516)
 We report tunnel magnetoresistance (TMR) ratios as high as 472% at roomtemperature and 804% at 5 K in pseudo-spin valve (SV) CoFeB/MgO/CoFeB magnetictunnel junctions (MTJs) annealed at 450oC, which is approaching thetheoretically predicted value.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[31.0, 472, '%', 0],[19.0, 804, '%', 0],[15.0, 5, 'K', 0],[18.0, 450, 'oC', 0],[98.0, 450, 'oC', 1]

B
###Effect of high annealing temperature on giant tunnel magnetoresistance ratio of CoFeB/MgO/CoFeB magnetic tunnel junctions|Jun Hayakawa,Shoji Ikeda,Young Min Lee,Fumihiro Matsukura,Hideo Ohno###
(563575, 563575)
 By contrast, the TMR ratios for exchange-biased(E<missing VAR>B) SV MTJs with a MnIr antiferromagnetic layer are found to drop when theyare annealed at 450oC.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 472, '%', 1],[87.0, 804, '%', 1],[83.0, 5, 'K', 1],[41.0, 450, 'oC', 1],[39.0, 450, 'oC', 0]

SV
###Effect of high annealing temperature on giant tunnel magnetoresistance ratio of CoFeB/MgO/CoFeB magnetic tunnel junctions|Jun Hayakawa,Shoji Ikeda,Young Min Lee,Fumihiro Matsukura,Hideo Ohno###
(563578, 563579)
 By contrast, the TMR ratios for exchange-biased(E<missing VAR>B) SV MTJs with a MnIr antiferromagnetic layer are found to drop when theyare annealed at 450oC.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 472, '%', 1],[90.0, 804, '%', 1],[86.0, 5, 'K', 1],[44.0, 450, 'oC', 1],[35.0, 450, 'oC', 0]

MnIr
###Effect of high annealing temperature on giant tunnel magnetoresistance ratio of CoFeB/MgO/CoFeB magnetic tunnel junctions|Jun Hayakawa,Shoji Ikeda,Young Min Lee,Fumihiro Matsukura,Hideo Ohno###
(563589, 563590)
 By contrast, the TMR ratios for exchange-biased(E<missing VAR>B) SV MTJs with a MnIr antiferromagnetic layer are found to drop when theyare annealed at 450oC.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 472, '%', 1],[101.0, 804, '%', 1],[97.0, 5, 'K', 1],[55.0, 450, 'oC', 1],[24.0, 450, 'oC', 0]

C
###Effect of high annealing temperature on giant tunnel magnetoresistance ratio of CoFeB/MgO/CoFeB magnetic tunnel junctions|Jun Hayakawa,Shoji Ikeda,Young Min Lee,Fumihiro Matsukura,Hideo Ohno###
(563638, 563638)
 Energy dispersive X<missing VAR>-ray analysis shows that annealing at450o<missing VAR>C induces interdiffusion of Mn and Ru atoms into the MgO barrier andferromagnetic layers in E<missing VAR>B-SV MTJs.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 472, '%', 2],[150.0, 804, '%', 2],[146.0, 5, 'K', 2],[104.0, 450, 'oC', 2],[24.0, 450, 'oC', 1]

Mn
###Effect of high annealing temperature on giant tunnel magnetoresistance ratio of CoFeB/MgO/CoFeB magnetic tunnel junctions|Jun Hayakawa,Shoji Ikeda,Young Min Lee,Fumihiro Matsukura,Hideo Ohno###
(563646, 563646)
 Energy dispersive X<missing VAR>-ray analysis shows that annealing at450o<missing VAR>C induces interdiffusion of Mn and Ru atoms into the MgO barrier andferromagnetic layers in E<missing VAR>B-SV MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[170.0, 472, '%', 2],[158.0, 804, '%', 2],[154.0, 5, 'K', 2],[112.0, 450, 'oC', 2],[32.0, 450, 'oC', 1]

Ru
###Effect of high annealing temperature on giant tunnel magnetoresistance ratio of CoFeB/MgO/CoFeB magnetic tunnel junctions|Jun Hayakawa,Shoji Ikeda,Young Min Lee,Fumihiro Matsukura,Hideo Ohno###
(563650, 563650)
 Energy dispersive X<missing VAR>-ray analysis shows that annealing at450o<missing VAR>C induces interdiffusion of Mn and Ru atoms into the MgO barrier andferromagnetic layers in E<missing VAR>B-SV MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[174.0, 472, '%', 2],[162.0, 804, '%', 2],[158.0, 5, 'K', 2],[116.0, 450, 'oC', 2],[36.0, 450, 'oC', 1]

MgO
###Effect of high annealing temperature on giant tunnel magnetoresistance ratio of CoFeB/MgO/CoFeB magnetic tunnel junctions|Jun Hayakawa,Shoji Ikeda,Young Min Lee,Fumihiro Matsukura,Hideo Ohno###
(563658, 563659)
 Energy dispersive X<missing VAR>-ray analysis shows that annealing at450o<missing VAR>C induces interdiffusion of Mn and Ru atoms into the MgO barrier andferromagnetic layers in E<missing VAR>B-SV MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[182.0, 472, '%', 2],[170.0, 804, '%', 2],[166.0, 5, 'K', 2],[124.0, 450, 'oC', 2],[44.0, 450, 'oC', 1]

B
###Effect of high annealing temperature on giant tunnel magnetoresistance ratio of CoFeB/MgO/CoFeB magnetic tunnel junctions|Jun Hayakawa,Shoji Ikeda,Young Min Lee,Fumihiro Matsukura,Hideo Ohno###
(563673, 563673)
 Energy dispersive X<missing VAR>-ray analysis shows that annealing at450o<missing VAR>C induces interdiffusion of Mn and Ru atoms into the MgO barrier andferromagnetic layers in E<missing VAR>B-SV MTJs.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[197.0, 472, '%', 2],[185.0, 804, '%', 2],[181.0, 5, 'K', 2],[139.0, 450, 'oC', 2],[59.0, 450, 'oC', 1]

SV
###Effect of high annealing temperature on giant tunnel magnetoresistance ratio of CoFeB/MgO/CoFeB magnetic tunnel junctions|Jun Hayakawa,Shoji Ikeda,Young Min Lee,Fumihiro Matsukura,Hideo Ohno###
(563675, 563676)
 Energy dispersive X<missing VAR>-ray analysis shows that annealing at450o<missing VAR>C induces interdiffusion of Mn and Ru atoms into the MgO barrier andferromagnetic layers in E<missing VAR>B-SV MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[199.0, 472, '%', 2],[187.0, 804, '%', 2],[183.0, 5, 'K', 2],[141.0, 450, 'oC', 2],[61.0, 450, 'oC', 1]

In
###Charge and spin transport in spin valves with anisotropic spin relaxation|H. Saarikoski,W. Wetzels,G. E. W. Bauer###
(564027, 564027)
 In the presence of both structureinversion asymmetry (SIA) and bulk inversion asymmetry (BIA) a giant anisotropyin the spin-relaxation times has been predicted.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SI
###Charge and spin transport in spin valves with anisotropic spin relaxation|H. Saarikoski,W. Wetzels,G. E. W. Bauer###
(564045, 564046)
 In the presence of both structureinversion asymmetry (SIA) and bulk inversion asymmetry (BIA) a giant anisotropyin the spin-relaxation times has been predicted.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BI
###Charge and spin transport in spin valves with anisotropic spin relaxation|H. Saarikoski,W. Wetzels,G. E. W. Bauer###
(564059, 564060)
 In the presence of both structureinversion asymmetry (SIA) and bulk inversion asymmetry (BIA) a giant anisotropyin the spin-relaxation times has been predicted.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnSi
###A hidden constant in the anomalous Hall effect of a high-purity magnet MnSi|Minhyea Lee,Y. Onose,Y. Tokura,N. P. Ong###
(564190, 564191)
A hidden constant in the anomalous Hall effect of a high-purity magnet MnSi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[221.0, 100, 'between', 4],[222.0, 5, 'K', 4]

MnSi
###A hidden constant in the anomalous Hall effect of a high-purity magnet MnSi|Minhyea Lee,Y. Onose,Y. Tokura,N. P. Ong###
(564206, 564207)
 Measurements of the Hall conductivity in MnSi can provide incisive tests oftheories of the anomalous Hall (AH) effect, because both the mean-free-path andmagnetoresistance (MR) are unusually large for a ferromagnet.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, 100, 'between', 3],[206.0, 5, 'K', 3]

H
###A hidden constant in the anomalous Hall effect of a high-purity magnet MnSi|Minhyea Lee,Y. Onose,Y. Tokura,N. P. Ong###
(564232, 564232)
 Measurements of the Hall conductivity in MnSi can provide incisive tests oftheories of the anomalous Hall (AH) effect, because both the mean-free-path andmagnetoresistance (MR) are unusually large for a ferromagnet.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[180.0, 100, 'between', 3],[181.0, 5, 'K', 3]

H
###A hidden constant in the anomalous Hall effect of a high-purity magnet MnSi|Minhyea Lee,Y. Onose,Y. Tokura,N. P. Ong###
(564296, 564296)
 The large MRprovides an accurate way to separate the AH conductivity sigmaxyA fromthe ordinary Hall conductivity sigmaxyN.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 100, 'between', 2],[117.0, 5, 'K', 2]

N
###A hidden constant in the anomalous Hall effect of a high-purity magnet MnSi|Minhyea Lee,Y. Onose,Y. Tokura,N. P. Ong###
(564317, 564317)
 The large MRprovides an accurate way to separate the AH conductivity sigmaxyA fromthe ordinary Hall conductivity sigmaxyN.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 100, 'between', 2],[96.0, 5, 'K', 2]

C
###A hidden constant in the anomalous Hall effect of a high-purity magnet MnSi|Minhyea Lee,Y. Onose,Y. Tokura,N. P. Ong###
(564330, 564330)
 Below the Curie temperatureT<missing VAR>C, sigmaxyA is linearly proportional to  M<missing VAR> (magnetization) with aproportionality constant SH that is independent of both T<missing VAR> and H.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 100, 'between', 1],[83.0, 5, 'K', 1]

SH
###A hidden constant in the anomalous Hall effect of a high-purity magnet MnSi|Minhyea Lee,Y. Onose,Y. Tokura,N. P. Ong###
(564361, 564362)
 Below the Curie temperatureT<missing VAR>C, sigmaxyA is linearly proportional to  M<missing VAR> (magnetization) with aproportionality constant SH that is independent of both T<missing VAR> and H.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 100, 'between', 1],[51.0, 5, 'K', 1]

H
###A hidden constant in the anomalous Hall effect of a high-purity magnet MnSi|Minhyea Lee,Y. Onose,Y. Tokura,N. P. Ong###
(564378, 564378)
 Below the Curie temperatureT<missing VAR>C, sigmaxyA is linearly proportional to  M<missing VAR> (magnetization) with aproportionality constant SH that is independent of both T<missing VAR> and H.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 100, 'between', 1],[35.0, 5, 'K', 1]

In
###A hidden constant in the anomalous Hall effect of a high-purity magnet MnSi|Minhyea Lee,Y. Onose,Y. Tokura,N. P. Ong###
(564381, 564381)
 Inparticular, SH remains a constant while sigmaxyN changes by a factorof 100 between 5 K and T<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 100, 'between', 0],[32.0, 5, 'K', 0]

SH
###A hidden constant in the anomalous Hall effect of a high-purity magnet MnSi|Minhyea Lee,Y. Onose,Y. Tokura,N. P. Ong###
(564387, 564388)
 Inparticular, SH remains a constant while sigmaxyN changes by a factorof 100 between 5 K and T<missing VAR>C.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 100, 'between', 0],[25.0, 5, 'K', 0]

N
###A hidden constant in the anomalous Hall effect of a high-purity magnet MnSi|Minhyea Lee,Y. Onose,Y. Tokura,N. P. Ong###
(564400, 564400)
 Inparticular, SH remains a constant while sigmaxyN changes by a factorof 100 between 5 K and T<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 100, 'between', 0],[13.0, 5, 'K', 0]

C
###A hidden constant in the anomalous Hall effect of a high-purity magnet MnSi|Minhyea Lee,Y. Onose,Y. Tokura,N. P. Ong###
(564418, 564418)
 Inparticular, SH remains a constant while sigmaxyN changes by a factorof 100 between 5 K and T<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 100, 'between', 0],[5.0, 5, 'K', 0]

SH
###A hidden constant in the anomalous Hall effect of a high-purity magnet MnSi|Minhyea Lee,Y. Onose,Y. Tokura,N. P. Ong###
(564438, 564439)
 We discuss implications of the hidden constancyin SH.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 100, 'between', 1],[25.0, 5, 'K', 1]

YBa2
###Total suppression of superconductivity by high magnetic fields in YBa2 Cu3O6.6|F. Rullier-Albenque,H. Alloul,Cyril Proust,P. Lejay,A. Forget,D. Colson###
(564468, 564470)
Total suppression of superconductivity by high magnetic fields in YBa2 Cu3O6.6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 60, 'T', 1],[69.0, 3.5, 'K', 1],[148.0, 50, 'Tesla', 3],[255.0, 2, 'D', 4]

Cu3O6.6
###Total suppression of superconductivity by high magnetic fields in YBa2 Cu3O6.6|F. Rullier-Albenque,H. Alloul,Cyril Proust,P. Lejay,A. Forget,D. Colson###
(564472, 564475)
Total suppression of superconductivity by high magnetic fields in YBa2 Cu3O6.6.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6875,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 60, 'T', 1],[64.0, 3.5, 'K', 1],[143.0, 50, 'Tesla', 3],[250.0, 2, 'D', 4]

YBCO6.6
###Total suppression of superconductivity by high magnetic fields in YBa2 Cu3O6.6|F. Rullier-Albenque,H. Alloul,Cyril Proust,P. Lejay,A. Forget,D. Colson###
(564515, 564519)
 We have studied in fields up to 60T the variation of the transversemagnetoresistance (MR) of underdoped YBCO6.6 crystals either pure or with Tcreduced down to 3.5K by electron irradiation.
Featurization terminated normally.
0,0,0,0,0.10416666666666667,0.10416666666666667,0,0.6875,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.10416666666666667,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 60, 'T', 0],[20.0, 3.5, 'K', 0],[99.0, 50, 'Tesla', 2],[206.0, 2, 'D', 3]

Tc
###Total suppression of superconductivity by high magnetic fields in YBa2 Cu3O6.6|F. Rullier-Albenque,H. Alloul,Cyril Proust,P. Lejay,A. Forget,D. Colson###
(564531, 564531)
 We have studied in fields up to 60T the variation of the transversemagnetoresistance (MR) of underdoped YBCO6.6 crystals either pure or with Tcreduced down to 3.5K by electron irradiation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 60, 'T', 0],[8.0, 3.5, 'K', 0],[87.0, 50, 'Tesla', 2],[194.0, 2, 'D', 3]

H
###Total suppression of superconductivity by high magnetic fields in YBa2 Cu3O6.6|F. Rullier-Albenque,H. Alloul,Cyril Proust,P. Lejay,A. Forget,D. Colson###
(564576, 564576)
 We evidence that the normal stateMR is restored above a threshold field Hc(T), which is found to vanish atTc>>Tc.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 60, 'T', 1],[37.0, 3.5, 'K', 1],[42.0, 50, 'Tesla', 1],[149.0, 2, 'D', 2]

Tc
###Total suppression of superconductivity by high magnetic fields in YBa2 Cu3O6.6|F. Rullier-Albenque,H. Alloul,Cyril Proust,P. Lejay,A. Forget,D. Colson###
(564600, 564600)
 We evidence that the normal stateMR is restored above a threshold field Hc(T), which is found to vanish atTc>>Tc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 60, 'T', 1],[61.0, 3.5, 'K', 1],[18.0, 50, 'Tesla', 1],[125.0, 2, 'D', 2]

In
###Total suppression of superconductivity by high magnetic fields in YBa2 Cu3O6.6|F. Rullier-Albenque,H. Alloul,Cyril Proust,P. Lejay,A. Forget,D. Colson###
(564603, 564603)
 In the pure YBCO6.6 sample a 50 Tesla field is already required tocompletely suppress the superconducting fluctuations at Tc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 60, 'T', 2],[64.0, 3.5, 'K', 2],[15.0, 50, 'Tesla', 0],[122.0, 2, 'D', 1]

YBCO6.6
###Total suppression of superconductivity by high magnetic fields in YBa2 Cu3O6.6|F. Rullier-Albenque,H. Alloul,Cyril Proust,P. Lejay,A. Forget,D. Colson###
(564609, 564613)
 In the pure YBCO6.6 sample a 50 Tesla field is already required tocompletely suppress the superconducting fluctuations at Tc.
Featurization terminated normally.
0,0,0,0,0.10416666666666667,0.10416666666666667,0,0.6875,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.10416666666666667,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 60, 'T', 2],[70.0, 3.5, 'K', 2],[5.0, 50, 'Tesla', 0],[112.0, 2, 'D', 1]

Tc
###Total suppression of superconductivity by high magnetic fields in YBa2 Cu3O6.6|F. Rullier-Albenque,H. Alloul,Cyril Proust,P. Lejay,A. Forget,D. Colson###
(564643, 564643)
 In the pure YBCO6.6 sample a 50 Tesla field is already required tocompletely suppress the superconducting fluctuations at Tc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 60, 'T', 2],[104.0, 3.5, 'K', 2],[25.0, 50, 'Tesla', 0],[82.0, 2, 'D', 1]

Tc
###Total suppression of superconductivity by high magnetic fields in YBa2 Cu3O6.6|F. Rullier-Albenque,H. Alloul,Cyril Proust,P. Lejay,A. Forget,D. Colson###
(564681, 564681)
 While disorder doesnot depress the pseudogap temperature, it reduces drastically the phasecoherence established at Tc and weakly Hc<missing VAR>(0), Tc and the onset Tnu of theNernst signal which are more characteristic of the 2D local pairing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[190.0, 60, 'T', 3],[142.0, 3.5, 'K', 3],[63.0, 50, 'Tesla', 1],[44.0, 2, 'D', 0]

H
###Total suppression of superconductivity by high magnetic fields in YBa2 Cu3O6.6|F. Rullier-Albenque,H. Alloul,Cyril Proust,P. Lejay,A. Forget,D. Colson###
(564687, 564687)
 While disorder doesnot depress the pseudogap temperature, it reduces drastically the phasecoherence established at Tc and weakly Hc<missing VAR>(0), Tc and the onset Tnu of theNernst signal which are more characteristic of the 2D local pairing.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[196.0, 60, 'T', 3],[148.0, 3.5, 'K', 3],[69.0, 50, 'Tesla', 1],[38.0, 2, 'D', 0]

B
###Infrared probe of the anomalous magnetotransport of highly oriented pyrolytic graphite in the extreme quantum limit|Z. Q. Li,S. -W. Tsai,W. J. Padilla,S. V. Dordevic,K. S. Burch,Y. J. Wang,D. N. Basov###
(564806, 564806)
 We present a systematic investigation of the magnetoreflectance of highlyoriented pyrolytic graphite in magnetic field B up to 18 T .
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 18, 'T', 0],[117.0, 1, 'D', 2],[127.0, 3, 'D', 2]

(B)
###Infrared probe of the anomalous magnetotransport of highly oriented pyrolytic graphite in the extreme quantum limit|Z. Q. Li,S. -W. Tsai,W. J. Padilla,S. V. Dordevic,K. S. Burch,Y. J. Wang,D. N. Basov###
(564881, 564883)
 We find a linear field dependencefor inverse lifetime 1/tau(B) of the lowest Landau levels, which is consistentwith the hypothesis of a three-dimensional (3D) to 1D crossover in ananisotropic 3D metal in the quantum limit.
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 18, 'T', 2],[40.0, 1, 'D', 0],[50.0, 3, 'D', 0]

C
###Antinodal quasiparticles below and above T_Curie in the CMR oxide La_(2-2x)Sr_(1+2x)Mn_(2)O_(7) with x=0.36|S. de Jong,Y. Huang,I. Santoso,F. Massee,W. K. Siu,A. Mans,R. Follath,O. Schwartzkopf,M. S. Golden###
(565022, 565022)
Antinodal quasiparticles below and above T<missing VAR>Curie in the CMR oxide La(2-2x)Sr(12x)Mn(2)O(7) with x<missing VAR>0.36.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 0.36, '<', 1],[119.0, 0.4, ',', 1],[250.0, 50, 'K', 3]

In
###Antinodal quasiparticles below and above T_Curie in the CMR oxide La_(2-2x)Sr_(1+2x)Mn_(2)O_(7) with x=0.36|S. de Jong,Y. Huang,I. Santoso,F. Massee,W. K. Siu,A. Mans,R. Follath,O. Schwartzkopf,M. S. Golden###
(565056, 565056)
 In light of recent conflicting angle resolved photoemission studies on thebilayered colossal magnetoresistant (CMR) manganiteLa2-2x<missing VAR>Sr12x<missing VAR>Mn2O7 (0.36< x<missing VAR>< 0.40), new ARPES data are presented forx<missing VAR>0.36 and 0.40, showing only for the former clear quasiparticle-like featuresat and around the (pi, 0)-point in k<missing VAR>-space.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 0.36, '<', 0],[85.0, 0.4, ',', 0],[216.0, 50, 'K', 2]

C
###Antinodal quasiparticles below and above T_Curie in the CMR oxide La_(2-2x)Sr_(1+2x)Mn_(2)O_(7) with x=0.36|S. de Jong,Y. Huang,I. Santoso,F. Massee,W. K. Siu,A. Mans,R. Follath,O. Schwartzkopf,M. S. Golden###
(565086, 565086)
 In light of recent conflicting angle resolved photoemission studies on thebilayered colossal magnetoresistant (CMR) manganiteLa2-2x<missing VAR>Sr12x<missing VAR>Mn2O7 (0.36< x<missing VAR>< 0.40), new ARPES data are presented forx<missing VAR>0.36 and 0.40, showing only for the former clear quasiparticle-like featuresat and around the (pi, 0)-point in k<missing VAR>-space.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 0.36, '<', 0],[55.0, 0.4, ',', 0],[186.0, 50, 'K', 2]

La2
###Antinodal quasiparticles below and above T_Curie in the CMR oxide La_(2-2x)Sr_(1+2x)Mn_(2)O_(7) with x=0.36|S. de Jong,Y. Huang,I. Santoso,F. Massee,W. K. Siu,A. Mans,R. Follath,O. Schwartzkopf,M. S. Golden###
(565094, 565095)
 In light of recent conflicting angle resolved photoemission studies on thebilayered colossal magnetoresistant (CMR) manganiteLa2-2x<missing VAR>Sr12x<missing VAR>Mn2O7 (0.36< x<missing VAR>< 0.40), new ARPES data are presented forx<missing VAR>0.36 and 0.40, showing only for the former clear quasiparticle-like featuresat and around the (pi, 0)-point in k<missing VAR>-space.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 0.36, '<', 0],[46.0, 0.4, ',', 0],[177.0, 50, 'K', 2]

Sr12
###Antinodal quasiparticles below and above T_Curie in the CMR oxide La_(2-2x)Sr_(1+2x)Mn_(2)O_(7) with x=0.36|S. de Jong,Y. Huang,I. Santoso,F. Massee,W. K. Siu,A. Mans,R. Follath,O. Schwartzkopf,M. S. Golden###
(565099, 565101)
 In light of recent conflicting angle resolved photoemission studies on thebilayered colossal magnetoresistant (CMR) manganiteLa2-2x<missing VAR>Sr12x<missing VAR>Mn2O7 (0.36< x<missing VAR>< 0.40), new ARPES data are presented forx<missing VAR>0.36 and 0.40, showing only for the former clear quasiparticle-like featuresat and around the (pi, 0)-point in k<missing VAR>-space.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 0.36, '<', 0],[40.0, 0.4, ',', 0],[171.0, 50, 'K', 2]

Mn2O7
###Antinodal quasiparticles below and above T_Curie in the CMR oxide La_(2-2x)Sr_(1+2x)Mn_(2)O_(7) with x=0.36|S. de Jong,Y. Huang,I. Santoso,F. Massee,W. K. Siu,A. Mans,R. Follath,O. Schwartzkopf,M. S. Golden###
(565103, 565106)
 In light of recent conflicting angle resolved photoemission studies on thebilayered colossal magnetoresistant (CMR) manganiteLa2-2x<missing VAR>Sr12x<missing VAR>Mn2O7 (0.36< x<missing VAR>< 0.40), new ARPES data are presented forx<missing VAR>0.36 and 0.40, showing only for the former clear quasiparticle-like featuresat and around the (pi, 0)-point in k<missing VAR>-space.
Featurization terminated normally.
0,0,0,0,0,0,0,0.7777777777777778,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 0.36, '<', 0],[35.0, 0.4, ',', 0],[166.0, 50, 'K', 2]

S
###Antinodal quasiparticles below and above T_Curie in the CMR oxide La_(2-2x)Sr_(1+2x)Mn_(2)O_(7) with x=0.36|S. de Jong,Y. Huang,I. Santoso,F. Massee,W. K. Siu,A. Mans,R. Follath,O. Schwartzkopf,M. S. Golden###
(565125, 565125)
 In light of recent conflicting angle resolved photoemission studies on thebilayered colossal magnetoresistant (CMR) manganiteLa2-2x<missing VAR>Sr12x<missing VAR>Mn2O7 (0.36< x<missing VAR>< 0.40), new ARPES data are presented forx<missing VAR>0.36 and 0.40, showing only for the former clear quasiparticle-like featuresat and around the (pi, 0)-point in k<missing VAR>-space.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 0.36, '<', 0],[16.0, 0.4, ',', 0],[147.0, 50, 'K', 2]

TiO
###Strong magnetic scattering from TiO$_{x}$ adhesion layers|A. Trionfi,S. Lee,D. Natelson###
(565571, 565572)
Strong magnetic scattering from TiOx<missing VAR> adhesion layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 1.5, 'nm', 3]

As
###Strong magnetic scattering from TiO$_{x}$ adhesion layers|A. Trionfi,S. Lee,D. Natelson###
(565606, 565606)
 As a result, the weak localization magnetoresistance andtime-dependent universal conductance fluctuations are powerful probes ofmagnetic impurities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 1.5, 'nm', 1]

Au
###Strong magnetic scattering from TiO$_{x}$ adhesion layers|A. Trionfi,S. Lee,D. Natelson###
(565662, 565662)
 We report measurements of these effects in Au and Agnanowires with a 1.5 nm thick Ti adhesion layer underneath the deposited metal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 1.5, 'nm', 0]

Ag
###Strong magnetic scattering from TiO$_{x}$ adhesion layers|A. Trionfi,S. Lee,D. Natelson###
(565666, 565666)
 We report measurements of these effects in Au and Agnanowires with a 1.5 nm thick Ti adhesion layer underneath the deposited metal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 1.5, 'nm', 0]

Ti
###Strong magnetic scattering from TiO$_{x}$ adhesion layers|A. Trionfi,S. Lee,D. Natelson###
(565678, 565678)
 We report measurements of these effects in Au and Agnanowires with a 1.5 nm thick Ti adhesion layer underneath the deposited metal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 1.5, 'nm', 0]

Ti
###Strong magnetic scattering from TiO$_{x}$ adhesion layers|A. Trionfi,S. Lee,D. Natelson###
(565719, 565719)
The results indicate an anomalously large magnetic impurity concentration dueto the Ti layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 1.5, 'nm', 1]

Ti
###Strong magnetic scattering from TiO$_{x}$ adhesion layers|A. Trionfi,S. Lee,D. Natelson###
(565759, 565759)
 Results suggest that this magnetic scattering and itsevolution are related to the oxidation state of the Ti.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 1.5, 'nm', 2]

Co2Cr0.6Fe0.4Al/MgO/CoFe
###Large inverse tunneling magnetoresistance in Co$_2$Cr$_{0.6}$Fe$_{0.4}$Al/MgO/CoFe magnetic tunnel junctions|A. D. Rata,H. Braak,D. E. Buergler,C. M. Schneider###
(565780, 565792)
Large inverse tunneling magnetoresistance in Co2Cr0.6Fe0.4Al/MgO/CoFe magnetic tunnel junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[92.0, -66, '%', 2],[110.0, -84, '%', 3],[116.0, 20, 'K', 3]

Co2Cr0.6Fe0.4Al/MgO/CoFe
###Large inverse tunneling magnetoresistance in Co$_2$Cr$_{0.6}$Fe$_{0.4}$Al/MgO/CoFe magnetic tunnel junctions|A. D. Rata,H. Braak,D. E. Buergler,C. M. Schneider###
(565816, 565828)
 Magnetic tunnel junctions with the layer sequenceCo2Cr0.6Fe0.4Al/MgO/CoFe were fabricated by magnetron sputteringat room temperature (RT).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[56.0, -66, '%', 1],[74.0, -84, '%', 2],[80.0, 20, 'K', 2]

V
###Large inverse tunneling magnetoresistance in Co$_2$Cr$_{0.6}$Fe$_{0.4}$Al/MgO/CoFe magnetic tunnel junctions|A. D. Rata,H. Braak,D. E. Buergler,C. M. Schneider###
(565963, 565963)
 The dependence on thevoltage drop shows an unusual behavior with two almost symmetric peaks atpm600 m<missing VAR>V with large inverse TMR ratios and small positive values around zerobias.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, -66, '%', 2],[61.0, -84, '%', 1],[55.0, 20, 'K', 1]

Co
###Magnetic characterization and switching of Co nano-rings in current-perpendicular-to-plane configuration|T. Yang,M. Hara,A. Hirohata,T. Kimura,Y. Otani###
(566011, 566011)
Magnetic characterization and switching of Co nano-rings in current-perpendicular-to-plane configuration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Magnetic characterization and switching of Co nano-rings in current-perpendicular-to-plane configuration|T. Yang,M. Hara,A. Hirohata,T. Kimura,Y. Otani###
(566034, 566034)
 We fabricated Co nano-rings incorporated in the vertical pseudo-spin-valvenanopillar structures with deep submicron lateral sizes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Magnetic characterization and switching of Co nano-rings in current-perpendicular-to-plane configuration|T. Yang,M. Hara,A. Hirohata,T. Kimura,Y. Otani###
(566147, 566147)
 The Co nano-rings can beswitched between the onion states as well as between onion and vortex statesnot only by the external field but also by the perpendicularly injected dccurrent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YbNiSi3
###Magnetic field tuning of the low temperature state in YbNiSi3|Sergey L. Bud'ko,Paul C. Canfield,Marcos A. Avila,Toshiro Takabatake###
(566241, 566244)
Magnetic field tuning of the low temperature state in YbNiSi3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YbNiSi3
###Magnetic field tuning of the low temperature state in YbNiSi3|Sergey L. Bud'ko,Paul C. Canfield,Marcos A. Avila,Toshiro Takabatake###
(566276, 566279)
 We present detailed, low temperature, magnetoresistance and specific heatdata of single crystal YbNiSi3 measured in magnetic field applied along theeasy magnetic axis, H  b<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Magnetic field tuning of the low temperature state in YbNiSi3|Sergey L. Bud'ko,Paul C. Canfield,Marcos A. Avila,Toshiro Takabatake###
(566303, 566303)
 We present detailed, low temperature, magnetoresistance and specific heatdata of single crystal YbNiSi3 measured in magnetic field applied along theeasy magnetic axis, H  b<missing VAR>.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Critical behavior of transport and magnetotransport in 2D electron system in Si in the vicinity of the metal-insulator transition|D. A. Knyazev,O. E. Omelyanovskii,V. M. Pudalov,I. S. Burmistrov###
(566475, 566475)
Critical behavior of transport and magnetotransport in 2D electron system in Si in the vicinity of the metal-insulator transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 2, 'D', 0],[38.0, 2, 'D', 1],[69.0, 2, 'D', 1],[149.0, 2, 'D', 2],[231.0, 2, 'D', 4]

Si
###Critical behavior of transport and magnetotransport in 2D electron system in Si in the vicinity of the metal-insulator transition|D. A. Knyazev,O. E. Omelyanovskii,V. M. Pudalov,I. S. Burmistrov###
(566522, 566522)
 We report on studies of the magnetoresistance in strongly correlated 2Delectron system in Si in the critical regime, in the close vicinity of the 2Dmetal-insulator transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 2, 'D', 1],[9.0, 2, 'D', 0],[22.0, 2, 'D', 0],[102.0, 2, 'D', 1],[184.0, 2, 'D', 3]

C
###Critical behavior of transport and magnetotransport in 2D electron system in Si in the vicinity of the metal-insulator transition|D. A. Knyazev,O. E. Omelyanovskii,V. M. Pudalov,I. S. Burmistrov###
(566594, 566594)
 We performed self-consistent comparison of our datawith solutions of two equations of the cross-over renormalization group (CRG)theory which describes temperature evolutions of the resistivity andinteraction parameters for 2D electron system.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 2, 'D', 2],[81.0, 2, 'D', 1],[50.0, 2, 'D', 1],[30.0, 2, 'D', 0],[112.0, 2, 'D', 2]

B
###Critical behavior of transport and magnetotransport in 2D electron system in Si in the vicinity of the metal-insulator transition|D. A. Knyazev,O. E. Omelyanovskii,V. M. Pudalov,I. S. Burmistrov###
(566650, 566650)
 We found a good agreementbetween the rho(T<missing VAR>,B) data and the RG theory in a wide range of the in-planefields, 0-2.1 T<missing VAR>.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[183.0, 2, 'D', 3],[137.0, 2, 'D', 2],[106.0, 2, 'D', 2],[26.0, 2, 'D', 1],[56.0, 2, 'D', 1]

(La0.4Pr0.6)1.2Sr1.8Mn2O7
###Steplike Lattice Deformation of Single Crystalline (La$_{0.4}$Pr$_{0.6}$)$_{1.2}$Sr$_{1.8}$Mn$_{2}$O$_{7}$ Bilayered Manganite|M. Matsukawa,Y. Yamato,T. Kumagai,R. Suryanarayanan,S. Nimori###
(566746, 566758)
Steplike Lattice Deformation of Single Crystalline (La0.4Pr0.6)1.2Sr1.8Mn2O7 Bilayered Manganite.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.04,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(La0.4Pr0.6)1.2Sr1.8Mn2O7
###Steplike Lattice Deformation of Single Crystalline (La$_{0.4}$Pr$_{0.6}$)$_{1.2}$Sr$_{1.8}$Mn$_{2}$O$_{7}$ Bilayered Manganite|M. Matsukawa,Y. Yamato,T. Kumagai,R. Suryanarayanan,S. Nimori###
(566784, 566796)
 We report a steplike lattice transformation of single crystalline(La0.4Pr0.6)1.2Sr1.8Mn2O7bilayered manganiteaccompanied by both magnetization and magnetoresistive jumps, and examine theultrasharp nature of the field-induced first-order transition from aparamagnetic insulator to a ferromagnetic metal phase accompanied by a hugedecrease in resistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.04,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###First-principles prediction of high Curie temperature for ferromagnetic bcc-Co and bcc-FeCo alloys and its relevance to tunneling magnetoresistance|Marjana Lezaic,Phivos Mavropoulos,Stefan Blügel###
(566969, 566969)
First-principles prediction of high Curie temperature for ferromagnetic bcc-Co and bcc-FeCo alloys and its relevance to tunneling magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeCo
###First-principles prediction of high Curie temperature for ferromagnetic bcc-Co and bcc-FeCo alloys and its relevance to tunneling magnetoresistance|Marjana Lezaic,Phivos Mavropoulos,Stefan Blügel###
(566975, 566976)
First-principles prediction of high Curie temperature for ferromagnetic bcc-Co and bcc-FeCo alloys and its relevance to tunneling magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###First-principles prediction of high Curie temperature for ferromagnetic bcc-Co and bcc-FeCo alloys and its relevance to tunneling magnetoresistance|Marjana Lezaic,Phivos Mavropoulos,Stefan Blügel###
(567009, 567009)
 We determine from first-principles the Curie temperature Tc for bulk Co inthe hcp, fcc, bcc, and tetragonalized bct phases, for FeCo alloys, and for bccand bct Fe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###First-principles prediction of high Curie temperature for ferromagnetic bcc-Co and bcc-FeCo alloys and its relevance to tunneling magnetoresistance|Marjana Lezaic,Phivos Mavropoulos,Stefan Blügel###
(567015, 567015)
 We determine from first-principles the Curie temperature Tc for bulk Co inthe hcp, fcc, bcc, and tetragonalized bct phases, for FeCo alloys, and for bccand bct Fe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeCo
###First-principles prediction of high Curie temperature for ferromagnetic bcc-Co and bcc-FeCo alloys and its relevance to tunneling magnetoresistance|Marjana Lezaic,Phivos Mavropoulos,Stefan Blügel###
(567042, 567043)
 We determine from first-principles the Curie temperature Tc for bulk Co inthe hcp, fcc, bcc, and tetragonalized bct phases, for FeCo alloys, and for bccand bct Fe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###First-principles prediction of high Curie temperature for ferromagnetic bcc-Co and bcc-FeCo alloys and its relevance to tunneling magnetoresistance|Marjana Lezaic,Phivos Mavropoulos,Stefan Blügel###
(567059, 567059)
 We determine from first-principles the Curie temperature Tc for bulk Co inthe hcp, fcc, bcc, and tetragonalized bct phases, for FeCo alloys, and for bccand bct Fe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###First-principles prediction of high Curie temperature for ferromagnetic bcc-Co and bcc-FeCo alloys and its relevance to tunneling magnetoresistance|Marjana Lezaic,Phivos Mavropoulos,Stefan Blügel###
(567066, 567066)
 For bcc-Co, Tc1420 K is predicted.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc1420
###First-principles prediction of high Curie temperature for ferromagnetic bcc-Co and bcc-FeCo alloys and its relevance to tunneling magnetoresistance|Marjana Lezaic,Phivos Mavropoulos,Stefan Blügel###
(567069, 567070)
 For bcc-Co, Tc1420 K is predicted.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###First-principles prediction of high Curie temperature for ferromagnetic bcc-Co and bcc-FeCo alloys and its relevance to tunneling magnetoresistance|Marjana Lezaic,Phivos Mavropoulos,Stefan Blügel###
(567072, 567072)
 For bcc-Co, Tc1420 K is predicted.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###First-principles prediction of high Curie temperature for ferromagnetic bcc-Co and bcc-FeCo alloys and its relevance to tunneling magnetoresistance|Marjana Lezaic,Phivos Mavropoulos,Stefan Blügel###
(567098, 567098)
 This would be the highest Curietemperature among the Co phases, suggesting that bcc-Co/MgO/bcc-Co tunneljunctions offer high magnetoresistance ratios even at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co/MgO
###First-principles prediction of high Curie temperature for ferromagnetic bcc-Co and bcc-FeCo alloys and its relevance to tunneling magnetoresistance|Marjana Lezaic,Phivos Mavropoulos,Stefan Blügel###
(567109, 567112)
 This would be the highest Curietemperature among the Co phases, suggesting that bcc-Co/MgO/bcc-Co tunneljunctions offer high magnetoresistance ratios even at room temperature.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Co
###First-principles prediction of high Curie temperature for ferromagnetic bcc-Co and bcc-FeCo alloys and its relevance to tunneling magnetoresistance|Marjana Lezaic,Phivos Mavropoulos,Stefan Blügel###
(567116, 567116)
 This would be the highest Curietemperature among the Co phases, suggesting that bcc-Co/MgO/bcc-Co tunneljunctions offer high magnetoresistance ratios even at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YMnO3/Pt
###Electric field effects on magnetotransport properties of multiferroic Py/YMnO3/Pt heterostructures|V. Laukhin,X. Marti,V. Skumryev,D. Hrabovsky,F. Sanchez,M. V. Garcia-Cuenca,C. Ferrater,M. Varela,U. Luders,J. F. Bobo,J. Fontcuberta###
(567214, 567219)
Electric field effects on magnetotransport properties of multiferroic Py/YMnO3/Pt heterostructures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

YMnO3
###Electric field effects on magnetotransport properties of multiferroic Py/YMnO3/Pt heterostructures|V. Laukhin,X. Marti,V. Skumryev,D. Hrabovsky,F. Sanchez,M. V. Garcia-Cuenca,C. Ferrater,M. Varela,U. Luders,J. F. Bobo,J. Fontcuberta###
(567247, 567250)
 We report on the exchange bias between antiferromagnetic and ferroelectrichexagonal YMnO3 epitaxial thin films sandwiched between a metallic electrode(Pt) and a soft ferromagnetic layer (Py).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(Pt)
###Electric field effects on magnetotransport properties of multiferroic Py/YMnO3/Pt heterostructures|V. Laukhin,X. Marti,V. Skumryev,D. Hrabovsky,F. Sanchez,M. V. Garcia-Cuenca,C. Ferrater,M. Varela,U. Luders,J. F. Bobo,J. Fontcuberta###
(567269, 567271)
 We report on the exchange bias between antiferromagnetic and ferroelectrichexagonal YMnO3 epitaxial thin films sandwiched between a metallic electrode(Pt) and a soft ferromagnetic layer (Py).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Current-induced vortex-vortex switching in a nanopillar comprising two Co nano-rings|T. Yang,A. Hirohata,M. Hara,T. Kimura,Y. Otani###
(567455, 567455)
Current-induced vortex-vortex switching in a nanopillar comprising two Co nano-rings.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Current-induced vortex-vortex switching in a nanopillar comprising two Co nano-rings|T. Yang,A. Hirohata,M. Hara,T. Kimura,Y. Otani###
(567497, 567497)
 We fabricated a current-perpendicular-to-plane pseudo-spin-valve nanopillarcomprising a thick and a thin Co rings with deep submicron lateral sizes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Current-induced vortex-vortex switching in a nanopillar comprising two Co nano-rings|T. Yang,A. Hirohata,M. Hara,T. Kimura,Y. Otani###
(567689, 567689)
 They can be designed tocooperate with each other in the vortex-to-vortex transitions by carefullysetting the chirality of the vortex state in the thick Co ring.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Influence of trigonal warping on interference effects in bilayer graphene|K. Kechedzhi,Vladimir I. Fal'ko,E. McCann,B. L. Altshuler###
(567791, 567791)
 In particular, the electronic Fermi line in each of its valleys has astrong p<missing VAR> -> -p<missing VAR> asymmetry due to a trigonal warping, which suppresses the weaklocalization effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Hidden symmetries in Bechgaard salt (TMTSF)2NO3|Kazumi Maki,Mario Basletic,Bojana Korin-Hamzic,Silvia Tomic###
(567931, 567931)
Hidden symmetries in Bechgaard salt (TMTSF)2NO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[170.0, 9, 'K', 3]

NO3
###Hidden symmetries in Bechgaard salt (TMTSF)2NO3|Kazumi Maki,Mario Basletic,Bojana Korin-Hamzic,Silvia Tomic###
(567934, 567936)
Hidden symmetries in Bechgaard salt (TMTSF)2NO3.
Featurization terminated normally.
0,0,0,0,0,0,0.25,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 9, 'K', 3]

F
###Hidden symmetries in Bechgaard salt (TMTSF)2NO3|Kazumi Maki,Mario Basletic,Bojana Korin-Hamzic,Silvia Tomic###
(567956, 567956)
 Among known Bechgaard and Fabre salts (TMTSF)2NO3 is unique since it neverbecomes superconducting even under pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 9, 'K', 2]

NO3
###Hidden symmetries in Bechgaard salt (TMTSF)2NO3|Kazumi Maki,Mario Basletic,Bojana Korin-Hamzic,Silvia Tomic###
(567959, 567961)
 Among known Bechgaard and Fabre salts (TMTSF)2NO3 is unique since it neverbecomes superconducting even under pressure.
Featurization terminated normally.
0,0,0,0,0,0,0.25,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 9, 'K', 2]

F
###Hidden symmetries in Bechgaard salt (TMTSF)2NO3|Kazumi Maki,Mario Basletic,Bojana Korin-Hamzic,Silvia Tomic###
(567995, 567995)
 Also, though (TMTSF)2NO3 undergoesthe spin density wave (SD<missing VAR>W) transition, the low temperature transport issemimetallic and gapless.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 9, 'K', 1]

NO3
###Hidden symmetries in Bechgaard salt (TMTSF)2NO3|Kazumi Maki,Mario Basletic,Bojana Korin-Hamzic,Silvia Tomic###
(567998, 568000)
 Also, though (TMTSF)2NO3 undergoesthe spin density wave (SD<missing VAR>W) transition, the low temperature transport issemimetallic and gapless.
Featurization terminated normally.
0,0,0,0,0,0,0.25,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 9, 'K', 1]

S
###Hidden symmetries in Bechgaard salt (TMTSF)2NO3|Kazumi Maki,Mario Basletic,Bojana Korin-Hamzic,Silvia Tomic###
(568014, 568014)
 Also, though (TMTSF)2NO3 undergoesthe spin density wave (SD<missing VAR>W) transition, the low temperature transport issemimetallic and gapless.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 9, 'K', 1]

W
###Hidden symmetries in Bechgaard salt (TMTSF)2NO3|Kazumi Maki,Mario Basletic,Bojana Korin-Hamzic,Silvia Tomic###
(568016, 568016)
 Also, though (TMTSF)2NO3 undergoesthe spin density wave (SD<missing VAR>W) transition, the low temperature transport issemimetallic and gapless.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 9, 'K', 1]

K
###Hidden symmetries in Bechgaard salt (TMTSF)2NO3|Kazumi Maki,Mario Basletic,Bojana Korin-Hamzic,Silvia Tomic###
(568086, 568086)
 We propose a) the absence of the superconductivityis due to the inverse symmetry breaking associated with the anion ordering at45K; b) the SD<missing VAR>W state below 9K should be unconventional as seen from the angledependent magnetoresistance oscillation (AMRO); c) a new phase diagram forBechgaard salts, where unconventional spin density wave (USD<missing VAR>W) occupies theprominent space.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 9, 'K', 0]

S
###Hidden symmetries in Bechgaard salt (TMTSF)2NO3|Kazumi Maki,Mario Basletic,Bojana Korin-Hamzic,Silvia Tomic###
(568094, 568094)
 We propose a) the absence of the superconductivityis due to the inverse symmetry breaking associated with the anion ordering at45K; b) the SD<missing VAR>W state below 9K should be unconventional as seen from the angledependent magnetoresistance oscillation (AMRO); c) a new phase diagram forBechgaard salts, where unconventional spin density wave (USD<missing VAR>W) occupies theprominent space.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 9, 'K', 0]

W
###Hidden symmetries in Bechgaard salt (TMTSF)2NO3|Kazumi Maki,Mario Basletic,Bojana Korin-Hamzic,Silvia Tomic###
(568096, 568096)
 We propose a) the absence of the superconductivityis due to the inverse symmetry breaking associated with the anion ordering at45K; b) the SD<missing VAR>W state below 9K should be unconventional as seen from the angledependent magnetoresistance oscillation (AMRO); c) a new phase diagram forBechgaard salts, where unconventional spin density wave (USD<missing VAR>W) occupies theprominent space.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 9, 'K', 0]

O
###Hidden symmetries in Bechgaard salt (TMTSF)2NO3|Kazumi Maki,Mario Basletic,Bojana Korin-Hamzic,Silvia Tomic###
(568130, 568130)
 We propose a) the absence of the superconductivityis due to the inverse symmetry breaking associated with the anion ordering at45K; b) the SD<missing VAR>W state below 9K should be unconventional as seen from the angledependent magnetoresistance oscillation (AMRO); c) a new phase diagram forBechgaard salts, where unconventional spin density wave (USD<missing VAR>W) occupies theprominent space.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 9, 'K', 0]

US
###Hidden symmetries in Bechgaard salt (TMTSF)2NO3|Kazumi Maki,Mario Basletic,Bojana Korin-Hamzic,Silvia Tomic###
(568164, 568165)
 We propose a) the absence of the superconductivityis due to the inverse symmetry breaking associated with the anion ordering at45K; b) the SD<missing VAR>W state below 9K should be unconventional as seen from the angledependent magnetoresistance oscillation (AMRO); c) a new phase diagram forBechgaard salts, where unconventional spin density wave (USD<missing VAR>W) occupies theprominent space.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
[63.0, 9, 'K', 0]

W
###Hidden symmetries in Bechgaard salt (TMTSF)2NO3|Kazumi Maki,Mario Basletic,Bojana Korin-Hamzic,Silvia Tomic###
(568167, 568167)
 We propose a) the absence of the superconductivityis due to the inverse symmetry breaking associated with the anion ordering at45K; b) the SD<missing VAR>W state below 9K should be unconventional as seen from the angledependent magnetoresistance oscillation (AMRO); c) a new phase diagram forBechgaard salts, where unconventional spin density wave (USD<missing VAR>W) occupies theprominent space.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 9, 'K', 0]

GaMnAs
###Spin-dependent transport properties in GaMnAs-based spin hot-carrier transistors|Yosuke Mizuno,Shinobu Ohya,Pham Nam Hai,Masaaki Tanaka###
(568466, 568468)
Spin-dependent transport properties in GaMnAs-based spin hot-carrier transistors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, -10, ',', 2]

GaMnAs
###Spin-dependent transport properties in GaMnAs-based spin hot-carrier transistors|Yosuke Mizuno,Shinobu Ohya,Pham Nam Hai,Masaaki Tanaka###
(568499, 568501)
 We have investigated the spin-dependent transport properties of GaMnAs-basedthree-terminal semiconductor spin hot-carrier transistor (SSHCT) structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, -10, ',', 1]

SSHC
###Spin-dependent transport properties in GaMnAs-based spin hot-carrier transistors|Yosuke Mizuno,Shinobu Ohya,Pham Nam Hai,Masaaki Tanaka###
(568521, 568524)
 We have investigated the spin-dependent transport properties of GaMnAs-basedthree-terminal semiconductor spin hot-carrier transistor (SSHCT) structures.
Featurization terminated normally.
0.25,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, -10, ',', 1]

V
###Spin-dependent transport properties in GaMnAs-based spin hot-carrier transistors|Yosuke Mizuno,Shinobu Ohya,Pham Nam Hai,Masaaki Tanaka###
(568542, 568542)
The emitter-base bias voltage VE<missing VAR>B dependence of the collector current IC,emitter current IE<missing VAR>, and base current IB shows that the current transfer ratioalpha ( IC / IE) and the current gain beta ( IC / IB) are 0.8-0.95 and 1-10,respectively, which means that GaMnAs-based SSHCTs have current amplifiability.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, -10, ',', 0]

B
###Spin-dependent transport properties in GaMnAs-based spin hot-carrier transistors|Yosuke Mizuno,Shinobu Ohya,Pham Nam Hai,Masaaki Tanaka###
(568544, 568544)
The emitter-base bias voltage VE<missing VAR>B dependence of the collector current IC,emitter current IE<missing VAR>, and base current IB shows that the current transfer ratioalpha ( IC / IE) and the current gain beta ( IC / IB) are 0.8-0.95 and 1-10,respectively, which means that GaMnAs-based SSHCTs have current amplifiability.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, -10, ',', 0]

IC
###Spin-dependent transport properties in GaMnAs-based spin hot-carrier transistors|Yosuke Mizuno,Shinobu Ohya,Pham Nam Hai,Masaaki Tanaka###
(568556, 568557)
The emitter-base bias voltage VE<missing VAR>B dependence of the collector current IC,emitter current IE<missing VAR>, and base current IB shows that the current transfer ratioalpha ( IC / IE) and the current gain beta ( IC / IB) are 0.8-0.95 and 1-10,respectively, which means that GaMnAs-based SSHCTs have current amplifiability.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, -10, ',', 0]

I
###Spin-dependent transport properties in GaMnAs-based spin hot-carrier transistors|Yosuke Mizuno,Shinobu Ohya,Pham Nam Hai,Masaaki Tanaka###
(568565, 568565)
The emitter-base bias voltage VE<missing VAR>B dependence of the collector current IC,emitter current IE<missing VAR>, and base current IB shows that the current transfer ratioalpha ( IC / IE) and the current gain beta ( IC / IB) are 0.8-0.95 and 1-10,respectively, which means that GaMnAs-based SSHCTs have current amplifiability.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, -10, ',', 0]

IB
###Spin-dependent transport properties in GaMnAs-based spin hot-carrier transistors|Yosuke Mizuno,Shinobu Ohya,Pham Nam Hai,Masaaki Tanaka###
(568575, 568576)
The emitter-base bias voltage VE<missing VAR>B dependence of the collector current IC,emitter current IE<missing VAR>, and base current IB shows that the current transfer ratioalpha ( IC / IE) and the current gain beta ( IC / IB) are 0.8-0.95 and 1-10,respectively, which means that GaMnAs-based SSHCTs have current amplifiability.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, -10, ',', 0]

IC
###Spin-dependent transport properties in GaMnAs-based spin hot-carrier transistors|Yosuke Mizuno,Shinobu Ohya,Pham Nam Hai,Masaaki Tanaka###
(568595, 568596)
The emitter-base bias voltage VE<missing VAR>B dependence of the collector current IC,emitter current IE<missing VAR>, and base current IB shows that the current transfer ratioalpha ( IC / IE) and the current gain beta ( IC / IB) are 0.8-0.95 and 1-10,respectively, which means that GaMnAs-based SSHCTs have current amplifiability.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, -10, ',', 0]

I
###Spin-dependent transport properties in GaMnAs-based spin hot-carrier transistors|Yosuke Mizuno,Shinobu Ohya,Pham Nam Hai,Masaaki Tanaka###
(568600, 568600)
The emitter-base bias voltage VE<missing VAR>B dependence of the collector current IC,emitter current IE<missing VAR>, and base current IB shows that the current transfer ratioalpha ( IC / IE) and the current gain beta ( IC / IB) are 0.8-0.95 and 1-10,respectively, which means that GaMnAs-based SSHCTs have current amplifiability.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, -10, ',', 0]

IC
###Spin-dependent transport properties in GaMnAs-based spin hot-carrier transistors|Yosuke Mizuno,Shinobu Ohya,Pham Nam Hai,Masaaki Tanaka###
(568616, 568617)
The emitter-base bias voltage VE<missing VAR>B dependence of the collector current IC,emitter current IE<missing VAR>, and base current IB shows that the current transfer ratioalpha ( IC / IE) and the current gain beta ( IC / IB) are 0.8-0.95 and 1-10,respectively, which means that GaMnAs-based SSHCTs have current amplifiability.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, -10, ',', 0]

B
###Spin-dependent transport properties in GaMnAs-based spin hot-carrier transistors|Yosuke Mizuno,Shinobu Ohya,Pham Nam Hai,Masaaki Tanaka###
(568622, 568622)
The emitter-base bias voltage VE<missing VAR>B dependence of the collector current IC,emitter current IE<missing VAR>, and base current IB shows that the current transfer ratioalpha ( IC / IE) and the current gain beta ( IC / IB) are 0.8-0.95 and 1-10,respectively, which means that GaMnAs-based SSHCTs have current amplifiability.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, -10, ',', 0]

GaMnAs
###Spin-dependent transport properties in GaMnAs-based spin hot-carrier transistors|Yosuke Mizuno,Shinobu Ohya,Pham Nam Hai,Masaaki Tanaka###
(568648, 568650)
The emitter-base bias voltage VE<missing VAR>B dependence of the collector current IC,emitter current IE<missing VAR>, and base current IB shows that the current transfer ratioalpha ( IC / IE) and the current gain beta ( IC / IB) are 0.8-0.95 and 1-10,respectively, which means that GaMnAs-based SSHCTs have current amplifiability.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, -10, ',', 0]

SSHC
###Spin-dependent transport properties in GaMnAs-based spin hot-carrier transistors|Yosuke Mizuno,Shinobu Ohya,Pham Nam Hai,Masaaki Tanaka###
(568654, 568657)
The emitter-base bias voltage VE<missing VAR>B dependence of the collector current IC,emitter current IE<missing VAR>, and base current IB shows that the current transfer ratioalpha ( IC / IE) and the current gain beta ( IC / IB) are 0.8-0.95 and 1-10,respectively, which means that GaMnAs-based SSHCTs have current amplifiability.
Featurization terminated normally.
0.25,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, -10, ',', 0]

In
###Spin-dependent transport properties in GaMnAs-based spin hot-carrier transistors|Yosuke Mizuno,Shinobu Ohya,Pham Nam Hai,Masaaki Tanaka###
(568668, 568668)
In addition, we observed an oscillatory behavior of the tunnelingmagnetoresistance (TMR) ratio with the increasing bias, which can be explainedby the resonant tunneling effect in the GaMnAs quantum well.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, -10, ',', 1]

GaMnAs
###Spin-dependent transport properties in GaMnAs-based spin hot-carrier transistors|Yosuke Mizuno,Shinobu Ohya,Pham Nam Hai,Masaaki Tanaka###
(568732, 568734)
In addition, we observed an oscillatory behavior of the tunnelingmagnetoresistance (TMR) ratio with the increasing bias, which can be explainedby the resonant tunneling effect in the GaMnAs quantum well.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, -10, ',', 1]

Co/Ni/Co
###Large Magnetoresistance in Co/Ni/Co Ferromagnetic Single Electron Transistors|R. S. Liu,H. Pettersson,L. Michalak,C. M. Canali,D. Suyatin,L. Samuelson###
(568755, 568759)
Large Magnetoresistance in Co/Ni/Co Ferromagnetic Single Electron Transistors.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[72.0, 4.2, 'K', 2],[85.0, 1.8, 'K', 3],[168.0, 18, '%', 4]

Co/Ni/Co
###Large Magnetoresistance in Co/Ni/Co Ferromagnetic Single Electron Transistors|R. S. Liu,H. Pettersson,L. Michalak,C. M. Canali,D. Suyatin,L. Samuelson###
(568789, 568793)
 We report on magnetotransport investigations of nano-scaled ferromagneticCo/Ni/Co single electron transistors.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[38.0, 4.2, 'K', 1],[51.0, 1.8, 'K', 2],[134.0, 18, '%', 3]

As
###Large Magnetoresistance in Co/Ni/Co Ferromagnetic Single Electron Transistors|R. S. Liu,H. Pettersson,L. Michalak,C. M. Canali,D. Suyatin,L. Samuelson###
(568802, 568802)
 As a result of reduced size, the devicesexhibit single electron transistor characteristics at 4.2K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 4.2, 'K', 0],[42.0, 1.8, 'K', 1],[125.0, 18, '%', 2]

Ni
###Large Magnetoresistance in Co/Ni/Co Ferromagnetic Single Electron Transistors|R. S. Liu,H. Pettersson,L. Michalak,C. M. Canali,D. Suyatin,L. Samuelson###
(568909, 568909)
 Magnetotransportmeasurements carried out at 1.8K reveal tunneling magnetoresistance (TMR)traces with negative coercive fields, which we interpret in terms of aswitching mechanism driven by the shape anisotropy of the central wire-like Niisland.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 4.2, 'K', 1],[65.0, 1.8, 'K', 0],[18.0, 18, '%', 1]

C
###Competing Ferromagnetic and Charge-Ordered States in Models for Manganites: the Origin of the CMR Effect|Cengiz Sen,Gonzalo Alvarez,Elbio Dagotto###
(569029, 569029)
Competing Ferromagnetic and Charge-Ordered States in Models for Manganites the Origin of the CMR Effect.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 0.75, ',', 3]

F
###Competing Ferromagnetic and Charge-Ordered States in Models for Manganites: the Origin of the CMR Effect|Cengiz Sen,Gonzalo Alvarez,Elbio Dagotto###
(569065, 569065)
 The one-orbital model for manganites with cooperative phonons andsuperexchange coupling J<missing VAR>rm AF has been investigated via large-scale MonteCarlo (M<missing VAR>C) simulations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 0.75, ',', 2]

C
###Competing Ferromagnetic and Charge-Ordered States in Models for Manganites: the Origin of the CMR Effect|Cengiz Sen,Gonzalo Alvarez,Elbio Dagotto###
(569086, 569086)
 The one-orbital model for manganites with cooperative phonons andsuperexchange coupling J<missing VAR>rm AF has been investigated via large-scale MonteCarlo (M<missing VAR>C) simulations.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 0.75, ',', 2]

F
###Competing Ferromagnetic and Charge-Ordered States in Models for Manganites: the Origin of the CMR Effect|Cengiz Sen,Gonzalo Alvarez,Elbio Dagotto###
(569136, 569136)
Focusing on electronic density n<missing VAR>0.75, a regime of competition betweenferromagnetic (FM) metallic and charge-ordered (CO) insulating states wasidentified.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 0.75, ',', 0]

(CO)
###Competing Ferromagnetic and Charge-Ordered States in Models for Manganites: the Origin of the CMR Effect|Cengiz Sen,Gonzalo Alvarez,Elbio Dagotto###
(569148, 569151)
Focusing on electronic density n<missing VAR>0.75, a regime of competition betweenferromagnetic (FM) metallic and charge-ordered (CO) insulating states wasidentified.
Featurization successful!
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 0.75, ',', 0]

In
###Competing Ferromagnetic and Charge-Ordered States in Models for Manganites: the Origin of the CMR Effect|Cengiz Sen,Gonzalo Alvarez,Elbio Dagotto###
(569163, 569163)
 In the vicinity of the associated bicritical point, colossalmagnetoresistance (CMR) effects were observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 0.75, ',', 1]

C
###Competing Ferromagnetic and Charge-Ordered States in Models for Manganites: the Origin of the CMR Effect|Cengiz Sen,Gonzalo Alvarez,Elbio Dagotto###
(569186, 569186)
 In the vicinity of the associated bicritical point, colossalmagnetoresistance (CMR) effects were observed.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 0.75, ',', 1]

C
###Competing Ferromagnetic and Charge-Ordered States in Models for Manganites: the Origin of the CMR Effect|Cengiz Sen,Gonzalo Alvarez,Elbio Dagotto###
(569200, 569200)
 The CMR is associated with thedevelopment of short-distance correlations among polarons, above the spinordering temperatures, resembling the charge arrangement of the low-temperatureCO state.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 0.75, ',', 2]

CO
###Competing Ferromagnetic and Charge-Ordered States in Models for Manganites: the Origin of the CMR Effect|Cengiz Sen,Gonzalo Alvarez,Elbio Dagotto###
(569257, 569258)
 The CMR is associated with thedevelopment of short-distance correlations among polarons, above the spinordering temperatures, resembling the charge arrangement of the low-temperatureCO state.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 0.75, ',', 2]

B
###Angle-dependent magnetoresistance oscillations due to magnetic breakdown orbits|A. F. Bangura,P. A. Goddard,J. Singleton,S. W. Tozer,A. I. Coldea,A. Ardavan,R. D. McDonald,S. J. Blundell,J. A. Schlueter###
(569349, 569349)
 Theeffect was observed in the organic superconductorkappa-(BEDT-TTF)2Cu(NCS)2 using hydrostatic pressures of up to 9.8 kbarand magnetic fields of up to 33 T.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 9.8, 'kbar', 0],[43.0, 33, 'T', 0]

F
###Angle-dependent magnetoresistance oscillations due to magnetic breakdown orbits|A. F. Bangura,P. A. Goddard,J. Singleton,S. W. Tozer,A. I. Coldea,A. Ardavan,R. D. McDonald,S. J. Blundell,J. A. Schlueter###
(569356, 569356)
 Theeffect was observed in the organic superconductorkappa-(BEDT-TTF)2Cu(NCS)2 using hydrostatic pressures of up to 9.8 kbarand magnetic fields of up to 33 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 9.8, 'kbar', 0],[36.0, 33, 'T', 0]

Cu(NCS)2
###Angle-dependent magnetoresistance oscillations due to magnetic breakdown orbits|A. F. Bangura,P. A. Goddard,J. Singleton,S. W. Tozer,A. I. Coldea,A. Ardavan,R. D. McDonald,S. J. Blundell,J. A. Schlueter###
(569359, 569365)
 Theeffect was observed in the organic superconductorkappa-(BEDT-TTF)2Cu(NCS)2 using hydrostatic pressures of up to 9.8 kbarand magnetic fields of up to 33 T.
Featurization terminated normally.
0,0,0,0,0,0.2857142857142857,0.2857142857142857,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 9.8, 'kbar', 0],[27.0, 33, 'T', 0]

In
###Angle-dependent magnetoresistance oscillations due to magnetic breakdown orbits|A. F. Bangura,P. A. Goddard,J. Singleton,S. W. Tozer,A. I. Coldea,A. Ardavan,R. D. McDonald,S. J. Blundell,J. A. Schlueter###
(569395, 569395)
 In addition, we show that similaroscillations are revealed in ambient pressure measurements, provided that theShubnikov-de Haas oscillations are suppressed either by elevated temperaturesor filtering of the data.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 9.8, 'kbar', 1],[3.0, 33, 'T', 1]

CaRuO3
###Uniaxial magnetocrystalline anisotropy in ${\rm CaRuO_3}$|Moty Schultz,Lior Klein,J. W. Reiner,M. R. Beasley###
(569510, 569513)
Uniaxial magnetocrystalline anisotropy in rm CaRuO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 1.5, ',', 1]

CaRuO3
###Uniaxial magnetocrystalline anisotropy in ${\rm CaRuO_3}$|Moty Schultz,Lior Klein,J. W. Reiner,M. R. Beasley###
(569518, 569521)
 rm CaRuO3 is a paramagnetic metal and since its low temperatureresistivity is described by rhorho0AT<missing VAR>gamma  with gamma sim 1.5, itis also considered a non-Fermi liquid (NFL) metal.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 1.5, ',', 0]

NF
###Uniaxial magnetocrystalline anisotropy in ${\rm CaRuO_3}$|Moty Schultz,Lior Klein,J. W. Reiner,M. R. Beasley###
(569585, 569586)
 rm CaRuO3 is a paramagnetic metal and since its low temperatureresistivity is described by rhorho0AT<missing VAR>gamma  with gamma sim 1.5, itis also considered a non-Fermi liquid (NFL) metal.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 1.5, ',', 0]

CaRuO3
###Uniaxial magnetocrystalline anisotropy in ${\rm CaRuO_3}$|Moty Schultz,Lior Klein,J. W. Reiner,M. R. Beasley###
(569625, 569628)
 We have performed extensivemagnetoresistance and Hall effect measurements of untwinned epitaxial films ofrm CaRuO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 1.5, ',', 1]

CaRuO3
###Uniaxial magnetocrystalline anisotropy in ${\rm CaRuO_3}$|Moty Schultz,Lior Klein,J. W. Reiner,M. R. Beasley###
(569641, 569644)
 These measurements reveal that rm CaRuO3 exhibitsuniaxial magnetocrystalline anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 1.5, ',', 2]

In
###Uniaxial magnetocrystalline anisotropy in ${\rm CaRuO_3}$|Moty Schultz,Lior Klein,J. W. Reiner,M. R. Beasley###
(569656, 569656)
 In addition, the low-temperature NFL<missing VAR>behavior is most effectively suppressed when a magnetic field is applied alongthe easy axis, suggesting that critical spin fluctuations, possibly due toproximity of a quantum critical phase transition, are related to the NFL<missing VAR>behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 1.5, ',', 3]

NF
###Uniaxial magnetocrystalline anisotropy in ${\rm CaRuO_3}$|Moty Schultz,Lior Klein,J. W. Reiner,M. R. Beasley###
(569667, 569668)
 In addition, the low-temperature NFL<missing VAR>behavior is most effectively suppressed when a magnetic field is applied alongthe easy axis, suggesting that critical spin fluctuations, possibly due toproximity of a quantum critical phase transition, are related to the NFL<missing VAR>behavior.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 1.5, ',', 3]

NF
###Uniaxial magnetocrystalline anisotropy in ${\rm CaRuO_3}$|Moty Schultz,Lior Klein,J. W. Reiner,M. R. Beasley###
(569745, 569746)
 In addition, the low-temperature NFL<missing VAR>behavior is most effectively suppressed when a magnetic field is applied alongthe easy axis, suggesting that critical spin fluctuations, possibly due toproximity of a quantum critical phase transition, are related to the NFL<missing VAR>behavior.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 1.5, ',', 3]

B
###Observation of Spin-Orbit Berry's Phase in Magnetoresistance of a Two-Dimensional Hole Anti-dot System|Ning Kang,Eisuke Abe,Yoshiaki Hashimoto,Yasuhiro Iye,Shingo Katsumoto###
(569822, 569822)
 We report observation of spin-orbit Berrys<missing VAR> phase in the Aharonov-Bohm (AB)type oscillation of weak field magnetoresistance in an anti-dot lattice (ADL)of a two-dimensional hole system.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Observation of Spin-Orbit Berry's Phase in Magnetoresistance of a Two-Dimensional Hole Anti-dot System|Ning Kang,Eisuke Abe,Yoshiaki Hashimoto,Yasuhiro Iye,Shingo Katsumoto###
(569871, 569871)
 An AB-type oscillation is superposed on thecommensurability peak, and the main peak in the Fourier transform is clearlysplit up due to variation in Berrys<missing VAR> phase originating from the spin-orbitinteraction.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrCo6O11
###Two-Staged Magnetoresistance Driven by Ising-like Spin Sublattice in SrCo6O11|S. Ishiwata,I. Terasaki,F. Ishii,N. Nagaosa,H. Mukuda,Y. Kitaoka,T. Saito,M. Takano###
(570023, 570027)
Two-Staged Magnetoresistance Driven by Ising-like Spin Sublattice in SrCo6O11.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6111111111111112,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.05555555555555555,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrCo6O11
###Two-Staged Magnetoresistance Driven by Ising-like Spin Sublattice in SrCo6O11|S. Ishiwata,I. Terasaki,F. Ishii,N. Nagaosa,H. Mukuda,Y. Kitaoka,T. Saito,M. Takano###
(570052, 570056)
 A two-staged, uniaxial magnetoresistive effect has been discovered inSrCo6O11 having a layered hexagonal structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6111111111111112,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.05555555555555555,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Optically tuned dimensionality crossover in photocarrier-doped SrTiO$_3$: onset of weak localization|Y. Kozuka,Y. Hikita,T. Susaki,H. Y. Hwang###
(570278, 570281)
Optically tuned dimensionality crossover in photocarrier-doped SrTiO3 onset of weak localization.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 2, 'K', 1]

SrTiO3
###Optically tuned dimensionality crossover in photocarrier-doped SrTiO$_3$: onset of weak localization|Y. Kozuka,Y. Hikita,T. Susaki,H. Y. Hwang###
(570311, 570314)
 We report magnetotransport properties of photogenerated electrons in undopedSrTiO3 single crystals under ultraviolet illumination down to 2 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 2, 'K', 0]

At
###Optically tuned dimensionality crossover in photocarrier-doped SrTiO$_3$: onset of weak localization|Y. Kozuka,Y. Hikita,T. Susaki,H. Y. Hwang###
(570394, 570394)
 At short wavelengths, when the sheet conductanceis close to the two-dimensional Mott minimum conductivity we have observedcritical behavior characteristic of weak localization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 2, 'K', 2]

SrTiO3
###Optically tuned dimensionality crossover in photocarrier-doped SrTiO$_3$: onset of weak localization|Y. Kozuka,Y. Hikita,T. Susaki,H. Y. Hwang###
(570497, 570500)
 The high mobility of photogeneratedelectrons in SrTiO3 allows continuous tuning of the effective electronicdimensionality by photoexcitation.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[168.0, 2, 'K', 4]

As
###Theory of a Magnetically-Controlled Quantum-Dot Spin Transistor|Daniel Urban,Matthias Braun,Jürgen König###
(570684, 570684)
 As the dot spin determines theconductance of the device, this allows for a purely magnetic transistor-likeoperation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Magnetic fingerprint in a ferromagnetic wire: Spin torque diode effect and induction of the DC voltage spectrum inherent in the wire under application for RF current|A. Yamaguchi,T. Ono,Y. Suzuki,S. Yuasa,H. Miyajima###
(571020, 571020)
Magnetic fingerprint in a ferromagnetic wire Spin torque diode effect and induction of the D<missing VAR>C voltage spectrum inherent in the wire under application for R<missing VAR>F current.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Magnetic fingerprint in a ferromagnetic wire: Spin torque diode effect and induction of the DC voltage spectrum inherent in the wire under application for RF current|A. Yamaguchi,T. Ono,Y. Suzuki,S. Yuasa,H. Miyajima###
(571041, 571041)
Magnetic fingerprint in a ferromagnetic wire Spin torque diode effect and induction of the D<missing VAR>C voltage spectrum inherent in the wire under application for R<missing VAR>F current.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Magnetic fingerprint in a ferromagnetic wire: Spin torque diode effect and induction of the DC voltage spectrum inherent in the wire under application for RF current|A. Yamaguchi,T. Ono,Y. Suzuki,S. Yuasa,H. Miyajima###
(571070, 571070)
 We report the rectifying effect of a constant-wave radio frequency (R<missing VAR>F)current by a magnetic domain wall (D<missing VAR>W) on a single-layered ferromagnetic wire.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Magnetic fingerprint in a ferromagnetic wire: Spin torque diode effect and induction of the DC voltage spectrum inherent in the wire under application for RF current|A. Yamaguchi,T. Ono,Y. Suzuki,S. Yuasa,H. Miyajima###
(571088, 571088)
 We report the rectifying effect of a constant-wave radio frequency (R<missing VAR>F)current by a magnetic domain wall (D<missing VAR>W) on a single-layered ferromagnetic wire.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Magnetic fingerprint in a ferromagnetic wire: Spin torque diode effect and induction of the DC voltage spectrum inherent in the wire under application for RF current|A. Yamaguchi,T. Ono,Y. Suzuki,S. Yuasa,H. Miyajima###
(571113, 571113)
A direct-current (D<missing VAR>C) voltage is generated by the spin torque diode effect,which is a consequence of magnetoresistance oscillation due to the resonantspin wave excitation induced by the spin-polarized R<missing VAR>F current.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Magnetic fingerprint in a ferromagnetic wire: Spin torque diode effect and induction of the DC voltage spectrum inherent in the wire under application for RF current|A. Yamaguchi,T. Ono,Y. Suzuki,S. Yuasa,H. Miyajima###
(571176, 571176)
A direct-current (D<missing VAR>C) voltage is generated by the spin torque diode effect,which is a consequence of magnetoresistance oscillation due to the resonantspin wave excitation induced by the spin-polarized R<missing VAR>F current.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Magnetic fingerprint in a ferromagnetic wire: Spin torque diode effect and induction of the DC voltage spectrum inherent in the wire under application for RF current|A. Yamaguchi,T. Ono,Y. Suzuki,S. Yuasa,H. Miyajima###
(571184, 571184)
 The D<missing VAR>C voltagespectrum strongly depends on the internal spin structure in the D<missing VAR>W, whichcorresponds to the magnetic fingerprint of the spin structure in theferromagnetic wire.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Magnetic fingerprint in a ferromagnetic wire: Spin torque diode effect and induction of the DC voltage spectrum inherent in the wire under application for RF current|A. Yamaguchi,T. Ono,Y. Suzuki,S. Yuasa,H. Miyajima###
(571210, 571210)
 The D<missing VAR>C voltagespectrum strongly depends on the internal spin structure in the D<missing VAR>W, whichcorresponds to the magnetic fingerprint of the spin structure in theferromagnetic wire.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CeCoIn5
###The Lorenz number in CeCoIn$_5$ inferred from the thermal and charge Hall currents|Y. Onose,N. P. Ong,C. Petrovic###
(571260, 571263)
The Lorenz number in CeCoIn5 inferred from the thermal and charge Hall currents.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7142857142857143,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CeCoIn5
###The Lorenz number in CeCoIn$_5$ inferred from the thermal and charge Hall currents|Y. Onose,N. P. Ong,C. Petrovic###
(571305, 571308)
 The thermal Hall conductivity kappaxy and Hall conductivitysigmaxy in CeCoIn5 are used to determine the Lorenz number calL<missing VAR>H at low temperature T<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7142857142857143,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###The Lorenz number in CeCoIn$_5$ inferred from the thermal and charge Hall currents|Y. Onose,N. P. Ong,C. Petrovic###
(571328, 571328)
 The thermal Hall conductivity kappaxy and Hall conductivitysigmaxy in CeCoIn5 are used to determine the Lorenz number calL<missing VAR>H at low temperature T<missing VAR>.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###The Lorenz number in CeCoIn$_5$ inferred from the thermal and charge Hall currents|Y. Onose,N. P. Ong,C. Petrovic###
(571412, 571412)
 At low T<missing VAR>, these excitations dominate thescattering of charge carriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Direct-current control of radiation-induced differential magnetoresistance oscillations in two-dimensional electron systems|X. L. Lei###
(571695, 571695)
 In the presence of both a microwaveradiation and a strong dc, the combined parameter epsilonomegaepsilonj<missing VAR>is shown to control the main resistance oscillations, in agreement with therecent measurement [Zhang it et al.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 98, ',', 4]

MgB2
###Probing the electron-phonon coupling in MgB2 through magnetoresistance measurements in neutron irradiated thin films|M. Monni,I. Pallecchi,C. Ferdeghini,V. Ferrando,A. Floris,E. Galleani d'Agliano,E. Lehmann,I. Sheikin,C. Tarantini,X. X. Xi,S. Massidda,M. Putti###
(571815, 571817)
Probing the electron-phonon coupling in MgB2 through magnetoresistance measurements in neutron irradiated thin films.
Featurization terminated normally.
0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgB2
###Probing the electron-phonon coupling in MgB2 through magnetoresistance measurements in neutron irradiated thin films|M. Monni,I. Pallecchi,C. Ferdeghini,V. Ferrando,A. Floris,E. Galleani d'Agliano,E. Lehmann,I. Sheikin,C. Tarantini,X. X. Xi,S. Massidda,M. Putti###
(571851, 571853)
 We report magnetoresistance (MR) measurements on MgB2 and the correspondingfull account from ab-initio calculations; we suggest that this combination canbe a useful tool to probe electron- phonon coupling.
Featurization terminated normally.
0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Probing the electron-phonon coupling in MgB2 through magnetoresistance measurements in neutron irradiated thin films|M. Monni,I. Pallecchi,C. Ferdeghini,V. Ferrando,A. Floris,E. Galleani d'Agliano,E. Lehmann,I. Sheikin,C. Tarantini,X. X. Xi,S. Massidda,M. Putti###
(571986, 571986)
 We obtain goodquantitative agreement between high field measurements on neutron irradiatedepitaxial thin films and calculations within Bloch-Boltzmann transport theoryover a wide range of magnetic fields (0-28 T) and temperatures (40-300 K), andas a function of the field orientation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

AlAs
###Anomalous giant piezoresistance in AlAs 2D electrons with anti-dot lattices|O. Gunawan,T. Gokmen,Y. P. Shkolnikov,E. P. De Poortere,M. Shayegan###
(572106, 572107)
Anomalous giant piezoresistance in AlAs 2D electrons with anti-dot lattices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[1.0, 2, 'D', 0]

AlAs
###Anomalous giant piezoresistance in AlAs 2D electrons with anti-dot lattices|O. Gunawan,T. Gokmen,Y. P. Shkolnikov,E. P. De Poortere,M. Shayegan###
(572123, 572124)
 An AlAs two-dimensional electron system patterned with an anti-dot latticeexhibits a giant piezoresistance (GPR) effect, with a sign opposite to thepiezoresistance observed in the unpatterned region.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 2, 'D', 1]

(HC)
###Anomalous exchange coupling in transition-metal-oxide based superlattices with antiferromagnetic spacer layers|P. Padhan,W. Prellier,R. C. Budhani###
(572377, 572380)
 A direct correlation is seen between the coercive field (HC) and themagnetic-field-dependent resistivity (MR) in SrMnO3/SrRuO3 superlattices ofperpendicular magnetic anisotropy.
Featurization successful!
0.5,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrMnO3/SrRuO3
###Anomalous exchange coupling in transition-metal-oxide based superlattices with antiferromagnetic spacer layers|P. Padhan,W. Prellier,R. C. Budhani###
(572402, 572410)
 A direct correlation is seen between the coercive field (HC) and themagnetic-field-dependent resistivity (MR) in SrMnO3/SrRuO3 superlattices ofperpendicular magnetic anisotropy.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

HC
###Anomalous exchange coupling in transition-metal-oxide based superlattices with antiferromagnetic spacer layers|P. Padhan,W. Prellier,R. C. Budhani###
(572466, 572467)
 Both HC andhigh-field MR also oscillate with the thickness of the SrMnO3 spacer layersseparating the metallic ruthenate.
Featurization terminated normally.
0.5,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrMnO3
###Anomalous exchange coupling in transition-metal-oxide based superlattices with antiferromagnetic spacer layers|P. Padhan,W. Prellier,R. C. Budhani###
(572493, 572496)
 Both HC andhigh-field MR also oscillate with the thickness of the SrMnO3 spacer layersseparating the metallic ruthenate.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrMnO3
###Anomalous exchange coupling in transition-metal-oxide based superlattices with antiferromagnetic spacer layers|P. Padhan,W. Prellier,R. C. Budhani###
(572594, 572597)
 Since the spacer in these superlattices hasno mobile carriers to facilitate an oscillatory coupling, we attribute theobserved behavior to the spin-polarized quantum tunneling of electrons betweenthe ferromagnetic layers and antiferromagnetically ordered t2g spins of SrMnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaMnAs
###Weak localization in GaMnAs: evidence of impurity band transport|L. P. Rokhinson,Y. Lyanda-Geller,Z. Ge,S. Shen,X. Liu,M. Dobrowolska,J. K. Furdyna###
(572614, 572616)
Weak localization in GaMnAs evidence of impurity band transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 0, '<', 1]

GaMnAs
###Weak localization in GaMnAs: evidence of impurity band transport|L. P. Rokhinson,Y. Lyanda-Geller,Z. Ge,S. Shen,X. Liu,M. Dobrowolska,J. K. Furdyna###
(572652, 572654)
 We report the observation of negative magnetoresistance in the ferromagneticsemiconductor GaMnAs at low temperatures (T<missing VAR><3 K) and low magnetic fields (0<B <20 mT).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 0, '<', 0]

K
###Weak localization in GaMnAs: evidence of impurity band transport|L. P. Rokhinson,Y. Lyanda-Geller,Z. Ge,S. Shen,X. Liu,M. Dobrowolska,J. K. Furdyna###
(572667, 572667)
 We report the observation of negative magnetoresistance in the ferromagneticsemiconductor GaMnAs at low temperatures (T<missing VAR><3 K) and low magnetic fields (0<B <20 mT).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 0, '<', 0]

B
###Weak localization in GaMnAs: evidence of impurity band transport|L. P. Rokhinson,Y. Lyanda-Geller,Z. Ge,S. Shen,X. Liu,M. Dobrowolska,J. K. Furdyna###
(572683, 572683)
 We report the observation of negative magnetoresistance in the ferromagneticsemiconductor GaMnAs at low temperatures (T<missing VAR><3 K) and low magnetic fields (0<B <20 mT).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 0, '<', 0]

In
###Weak localization in GaMnAs: evidence of impurity band transport|L. P. Rokhinson,Y. Lyanda-Geller,Z. Ge,S. Shen,X. Liu,M. Dobrowolska,J. K. Furdyna###
(572794, 572794)
 In addition to the weak localization,we observe Altshuler-Aronov electron-electron interactions effect in thismaterial.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 0, '<', 3]

YBa2Cu3O7
###Quantum vortex tunneling in $YBa_2Cu_3O_{7-δ}$ thin films|G. Koren,Y. Mor,A. Auerbach,E. Polturak###
(572848, 572854)
Quantum vortex tunneling in YBa2Cu3O7- thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5384615384615384,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23076923076923078,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15384615384615385,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YBa2Cu3O7
###Quantum vortex tunneling in $YBa_2Cu_3O_{7-δ}$ thin films|G. Koren,Y. Mor,A. Auerbach,E. Polturak###
(572961, 572967)
 Here,we measure the magnetoresistance (textitMR) due to vortex motion of a longmeander line of a superconducting film made of underdopedYBa2Cu3O7-delta.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5384615384615384,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23076923076923078,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15384615384615385,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Quantum vortex tunneling in $YBa_2Cu_3O_{7-δ}$ thin films|G. Koren,Y. Mor,A. Auerbach,E. Polturak###
(572972, 572972)
 At low temperatures (textitT), the textitMRshows a significant deviation from Arrhenius activation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Quantum vortex tunneling in $YBa_2Cu_3O_{7-δ}$ thin films|G. Koren,Y. Mor,A. Auerbach,E. Polturak###
(573028, 573028)
 The data is consistentwith two dimensional Variable Range Hopping (VR<missing VAR>H) of single vortices, i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Quantum vortex tunneling in $YBa_2Cu_3O_{7-δ}$ thin films|G. Koren,Y. Mor,A. Auerbach,E. Polturak###
(573030, 573030)
 The data is consistentwith two dimensional Variable Range Hopping (VR<missing VAR>H) of single vortices, i.e.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Quantum vortex tunneling in $YBa_2Cu_3O_{7-δ}$ thin films|G. Koren,Y. Mor,A. Auerbach,E. Polturak###
(573067, 573067)
 The VR<missing VAR>H temperature scale T<missing VAR>0 depends on thevortex tunneling rates between pinning sites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Quantum vortex tunneling in $YBa_2Cu_3O_{7-δ}$ thin films|G. Koren,Y. Mor,A. Auerbach,E. Polturak###
(573069, 573069)
 The VR<missing VAR>H temperature scale T<missing VAR>0 depends on thevortex tunneling rates between pinning sites.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaBaCo2O6
###Spin-locking effect in the nanoscale ordered perovskite cobaltite LaBaCo2O6|Asish K. Kundu,E. -L. Rautama,Ph. Boullay,V. Caignaert,V. Pralong,B. Raveau###
(573154, 573159)
Spin-locking effect in the nanoscale ordered perovskite cobaltite LaBaCo2O6.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 90, 'degree', 1],[113.0, 179, 'K', 2],[203.0, 90, 'degree', 4]

LaBaCo2O6
###Spin-locking effect in the nanoscale ordered perovskite cobaltite LaBaCo2O6|Asish K. Kundu,E. -L. Rautama,Ph. Boullay,V. Caignaert,V. Pralong,B. Raveau###
(573195, 573200)
 A new nanoscale ordered perovskite cobaltite, which consists of 90 degreeordered domains of the layered-112 LaBaCo2O6 has been evidenced by highresolution- transmission electron microscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 90, 'degree', 0],[72.0, 179, 'K', 1],[162.0, 90, 'degree', 3]

La0.5Ba0.5CoO3
###Spin-locking effect in the nanoscale ordered perovskite cobaltite LaBaCo2O6|Asish K. Kundu,E. -L. Rautama,Ph. Boullay,V. Caignaert,V. Pralong,B. Raveau###
(573237, 573243)
 This new form, like thedisordered La0.5Ba0.5CoO3 and ordered LaBaCo2O6, exhibits a ferromagnetictransition at T<missing VAR>C around 179 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 90, 'degree', 1],[29.0, 179, 'K', 0],[119.0, 90, 'degree', 2]

LaBaCo2O6
###Spin-locking effect in the nanoscale ordered perovskite cobaltite LaBaCo2O6|Asish K. Kundu,E. -L. Rautama,Ph. Boullay,V. Caignaert,V. Pralong,B. Raveau###
(573249, 573254)
 This new form, like thedisordered La0.5Ba0.5CoO3 and ordered LaBaCo2O6, exhibits a ferromagnetictransition at T<missing VAR>C around 179 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 90, 'degree', 1],[18.0, 179, 'K', 0],[108.0, 90, 'degree', 2]

C
###Spin-locking effect in the nanoscale ordered perovskite cobaltite LaBaCo2O6|Asish K. Kundu,E. -L. Rautama,Ph. Boullay,V. Caignaert,V. Pralong,B. Raveau###
(573269, 573269)
 This new form, like thedisordered La0.5Ba0.5CoO3 and ordered LaBaCo2O6, exhibits a ferromagnetictransition at T<missing VAR>C around 179 K.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 90, 'degree', 1],[3.0, 179, 'K', 0],[93.0, 90, 'degree', 2]

C
###Spin-locking effect in the nanoscale ordered perovskite cobaltite LaBaCo2O6|Asish K. Kundu,E. -L. Rautama,Ph. Boullay,V. Caignaert,V. Pralong,B. Raveau###
(573394, 573394)
 Moreover, one observes a semi-metal/semi-metal transition at T<missing VAR>Cwith a maximum magnetoresistance of 6.5 % at this temperature.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[214.0, 90, 'degree', 4],[122.0, 179, 'K', 3],[32.0, 90, 'degree', 1]

Fe/GaAs
###Reversal of spin polarization in Fe/GaAs (001) driven by resonant surface states: First-principles calculations|Athanasios N. Chantis,Kirill D. Belashchenko,Darryl L. Smith,Evgeny Y. Tsymbal,Mark van Schilfgaarde,Robert C. Albers###
(573436, 573439)
Reversal of spin polarization in Fe/GaAs (001) driven by resonant surface states First-principles calculations.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Fe/GaAs/Cu
###Reversal of spin polarization in Fe/GaAs (001) driven by resonant surface states: First-principles calculations|Athanasios N. Chantis,Kirill D. Belashchenko,Darryl L. Smith,Evgeny Y. Tsymbal,Mark van Schilfgaarde,Robert C. Albers###
(573559, 573564)
 Using a Greens<missing VAR> function approach within the local spin densityapproximation we calculate spin-dependent current in a Fe/GaAs/Cu tunneljunction as a function of applied bias voltage.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Fe/GaAs
###Reversal of spin polarization in Fe/GaAs (001) driven by resonant surface states: First-principles calculations|Athanasios N. Chantis,Kirill D. Belashchenko,Darryl L. Smith,Evgeny Y. Tsymbal,Mark van Schilfgaarde,Robert C. Albers###
(573656, 573659)
 This result explains recent experimental data on spininjection in Fe/GaAs contacts and on tunneling magnetoresistance in Fe/GaAs/Femagnetic tunnel junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Fe/GaAs/Fe
###Reversal of spin polarization in Fe/GaAs (001) driven by resonant surface states: First-principles calculations|Athanasios N. Chantis,Kirill D. Belashchenko,Darryl L. Smith,Evgeny Y. Tsymbal,Mark van Schilfgaarde,Robert C. Albers###
(573673, 573678)
 This result explains recent experimental data on spininjection in Fe/GaAs contacts and on tunneling magnetoresistance in Fe/GaAs/Femagnetic tunnel junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

GaAs/AlGaAs
###Electron magnetotransport in GaAs/AlGaAs superlattices with weak and strong inter-well coupling|L. Smrcka,N. A. Goncharuk,P. Svoboda,P. Vasek,Yu. Krupko,W. Wegscheider###
(573702, 573707)
Electron magnetotransport in GaAs/AlGaAs superlattices with weak and strong inter-well coupling.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[130.0, 3, 'D', 2],[133.0, 2, 'D', 2]

GaAs/AlGaAs
###Electron magnetotransport in GaAs/AlGaAs superlattices with weak and strong inter-well coupling|L. Smrcka,N. A. Goncharuk,P. Svoboda,P. Vasek,Yu. Krupko,W. Wegscheider###
(573746, 573751)
 We report on magnetotransport measurements in two MBE-grown GaAs/AlGaAssuperlattices formed by wide and narrow quantum wells and thin Si-dopedbarriers subject to tilted magnetic fields.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[86.0, 3, 'D', 1],[89.0, 2, 'D', 1]

Si
###Electron magnetotransport in GaAs/AlGaAs superlattices with weak and strong inter-well coupling|L. Smrcka,N. A. Goncharuk,P. Svoboda,P. Vasek,Yu. Krupko,W. Wegscheider###
(573774, 573774)
 We report on magnetotransport measurements in two MBE-grown GaAs/AlGaAssuperlattices formed by wide and narrow quantum wells and thin Si-dopedbarriers subject to tilted magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 3, 'D', 1],[66.0, 2, 'D', 1]

(MnAs)
###Spin valve effect by ballistic transport in ferromagnetic metal (MnAs) / semiconductor (GaAs) hybrid heterostructures|Pham Nam Hai,Yusuke Sakata,Masafumi Yokoyama,Shinobu Ohya,Masaaki Tanaka###
(573970, 573973)
Spin valve effect by ballistic transport in ferromagnetic metal (MnAs) / semiconductor (GaAs) hybrid heterostructures.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(GaAs)
###Spin valve effect by ballistic transport in ferromagnetic metal (MnAs) / semiconductor (GaAs) hybrid heterostructures|Pham Nam Hai,Yusuke Sakata,Masafumi Yokoyama,Shinobu Ohya,Masaaki Tanaka###
(573979, 573982)
Spin valve effect by ballistic transport in ferromagnetic metal (MnAs) / semiconductor (GaAs) hybrid heterostructures.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnAs
###Spin valve effect by ballistic transport in ferromagnetic metal (MnAs) / semiconductor (GaAs) hybrid heterostructures|Pham Nam Hai,Yusuke Sakata,Masafumi Yokoyama,Shinobu Ohya,Masaaki Tanaka###
(574014, 574015)
 We demonstrate the spin valve effect by ballistic transport in fullyepitaxial MnAs ferromagnetic metal / GaAs semiconductor / GaAsMnAs granularhybrid heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Spin valve effect by ballistic transport in ferromagnetic metal (MnAs) / semiconductor (GaAs) hybrid heterostructures|Pham Nam Hai,Yusuke Sakata,Masafumi Yokoyama,Shinobu Ohya,Masaaki Tanaka###
(574023, 574024)
 We demonstrate the spin valve effect by ballistic transport in fullyepitaxial MnAs ferromagnetic metal / GaAs semiconductor / GaAsMnAs granularhybrid heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAsMnAs
###Spin valve effect by ballistic transport in ferromagnetic metal (MnAs) / semiconductor (GaAs) hybrid heterostructures|Pham Nam Hai,Yusuke Sakata,Masafumi Yokoyama,Shinobu Ohya,Masaaki Tanaka###
(574030, 574033)
 We demonstrate the spin valve effect by ballistic transport in fullyepitaxial MnAs ferromagnetic metal / GaAs semiconductor / GaAsMnAs granularhybrid heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0.25,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAsMnAs
###Spin valve effect by ballistic transport in ferromagnetic metal (MnAs) / semiconductor (GaAs) hybrid heterostructures|Pham Nam Hai,Yusuke Sakata,Masafumi Yokoyama,Shinobu Ohya,Masaaki Tanaka###
(574045, 574048)
 The GaAsMnAs material contains ferromagnetic MnAsnanoparticles in a GaAs matrix, and acts as a spin injector and a spindetector.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0.25,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnAs
###Spin valve effect by ballistic transport in ferromagnetic metal (MnAs) / semiconductor (GaAs) hybrid heterostructures|Pham Nam Hai,Yusuke Sakata,Masafumi Yokoyama,Shinobu Ohya,Masaaki Tanaka###
(574056, 574057)
 The GaAsMnAs material contains ferromagnetic MnAsnanoparticles in a GaAs matrix, and acts as a spin injector and a spindetector.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Spin valve effect by ballistic transport in ferromagnetic metal (MnAs) / semiconductor (GaAs) hybrid heterostructures|Pham Nam Hai,Yusuke Sakata,Masafumi Yokoyama,Shinobu Ohya,Masaaki Tanaka###
(574066, 574067)
 The GaAsMnAs material contains ferromagnetic MnAsnanoparticles in a GaAs matrix, and acts as a spin injector and a spindetector.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs/MnAs
###Spin valve effect by ballistic transport in ferromagnetic metal (MnAs) / semiconductor (GaAs) hybrid heterostructures|Pham Nam Hai,Yusuke Sakata,Masafumi Yokoyama,Shinobu Ohya,Masaaki Tanaka###
(574106, 574110)
 Although the barrier height of the GaAs/MnAs interface was found tobe very small, relatively large magnetoresistance was observed.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Ga
###Spin Valve Effect in Self-exchange Biased Ferromagnetic Metal/Semiconductor Bilayers|M. Zhu,M. J. Wilson,B. L. Sheu,P. Mitra,P. Schiffer,N. Samarth###
(574506, 574506)
 We report magnetization and magetoresistance measurements in hybridferromagnetic metal/semiconductor heterostructures comprised of MnAs/(Ga,Mn)Asbilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Spin Valve Effect in Self-exchange Biased Ferromagnetic Metal/Semiconductor Bilayers|M. Zhu,M. J. Wilson,B. L. Sheu,P. Mitra,P. Schiffer,N. Samarth###
(574508, 574508)
 We report magnetization and magetoresistance measurements in hybridferromagnetic metal/semiconductor heterostructures comprised of MnAs/(Ga,Mn)Asbilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Spin Valve Effect in Self-exchange Biased Ferromagnetic Metal/Semiconductor Bilayers|M. Zhu,M. J. Wilson,B. L. Sheu,P. Mitra,P. Schiffer,N. Samarth###
(574510, 574510)
 We report magnetization and magetoresistance measurements in hybridferromagnetic metal/semiconductor heterostructures comprised of MnAs/(Ga,Mn)Asbilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnAs
###Spin Valve Effect in Self-exchange Biased Ferromagnetic Metal/Semiconductor Bilayers|M. Zhu,M. J. Wilson,B. L. Sheu,P. Mitra,P. Schiffer,N. Samarth###
(574530, 574531)
 Our measurements show that the (metallic) MnAs and (semiconducting)(Ga,Mn)As layers are exchange coupled, re- sulting in an exchange biasing ofthe magnetically softer (Ga,Mn)As layer that weakens with layer thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###Spin Valve Effect in Self-exchange Biased Ferromagnetic Metal/Semiconductor Bilayers|M. Zhu,M. J. Wilson,B. L. Sheu,P. Mitra,P. Schiffer,N. Samarth###
(574541, 574541)
 Our measurements show that the (metallic) MnAs and (semiconducting)(Ga,Mn)As layers are exchange coupled, re- sulting in an exchange biasing ofthe magnetically softer (Ga,Mn)As layer that weakens with layer thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Spin Valve Effect in Self-exchange Biased Ferromagnetic Metal/Semiconductor Bilayers|M. Zhu,M. J. Wilson,B. L. Sheu,P. Mitra,P. Schiffer,N. Samarth###
(574543, 574543)
 Our measurements show that the (metallic) MnAs and (semiconducting)(Ga,Mn)As layers are exchange coupled, re- sulting in an exchange biasing ofthe magnetically softer (Ga,Mn)As layer that weakens with layer thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Spin Valve Effect in Self-exchange Biased Ferromagnetic Metal/Semiconductor Bilayers|M. Zhu,M. J. Wilson,B. L. Sheu,P. Mitra,P. Schiffer,N. Samarth###
(574545, 574545)
 Our measurements show that the (metallic) MnAs and (semiconducting)(Ga,Mn)As layers are exchange coupled, re- sulting in an exchange biasing ofthe magnetically softer (Ga,Mn)As layer that weakens with layer thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###Spin Valve Effect in Self-exchange Biased Ferromagnetic Metal/Semiconductor Bilayers|M. Zhu,M. J. Wilson,B. L. Sheu,P. Mitra,P. Schiffer,N. Samarth###
(574579, 574579)
 Our measurements show that the (metallic) MnAs and (semiconducting)(Ga,Mn)As layers are exchange coupled, re- sulting in an exchange biasing ofthe magnetically softer (Ga,Mn)As layer that weakens with layer thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Spin Valve Effect in Self-exchange Biased Ferromagnetic Metal/Semiconductor Bilayers|M. Zhu,M. J. Wilson,B. L. Sheu,P. Mitra,P. Schiffer,N. Samarth###
(574581, 574581)
 Our measurements show that the (metallic) MnAs and (semiconducting)(Ga,Mn)As layers are exchange coupled, re- sulting in an exchange biasing ofthe magnetically softer (Ga,Mn)As layer that weakens with layer thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Spin Valve Effect in Self-exchange Biased Ferromagnetic Metal/Semiconductor Bilayers|M. Zhu,M. J. Wilson,B. L. Sheu,P. Mitra,P. Schiffer,N. Samarth###
(574583, 574583)
 Our measurements show that the (metallic) MnAs and (semiconducting)(Ga,Mn)As layers are exchange coupled, re- sulting in an exchange biasing ofthe magnetically softer (Ga,Mn)As layer that weakens with layer thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnAs
###Spin Valve Effect in Self-exchange Biased Ferromagnetic Metal/Semiconductor Bilayers|M. Zhu,M. J. Wilson,B. L. Sheu,P. Mitra,P. Schiffer,N. Samarth###
(574650, 574651)
Similar measurements in MnAs/p<missing VAR>- GaAs/(Ga,Mn)As trilayers show that the exchangecoupling diminishes with spatial separation between the layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###Spin Valve Effect in Self-exchange Biased Ferromagnetic Metal/Semiconductor Bilayers|M. Zhu,M. J. Wilson,B. L. Sheu,P. Mitra,P. Schiffer,N. Samarth###
(574660, 574660)
Similar measurements in MnAs/p<missing VAR>- GaAs/(Ga,Mn)As trilayers show that the exchangecoupling diminishes with spatial separation between the layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Spin Valve Effect in Self-exchange Biased Ferromagnetic Metal/Semiconductor Bilayers|M. Zhu,M. J. Wilson,B. L. Sheu,P. Mitra,P. Schiffer,N. Samarth###
(574662, 574662)
Similar measurements in MnAs/p<missing VAR>- GaAs/(Ga,Mn)As trilayers show that the exchangecoupling diminishes with spatial separation between the layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Spin Valve Effect in Self-exchange Biased Ferromagnetic Metal/Semiconductor Bilayers|M. Zhu,M. J. Wilson,B. L. Sheu,P. Mitra,P. Schiffer,N. Samarth###
(574664, 574664)
Similar measurements in MnAs/p<missing VAR>- GaAs/(Ga,Mn)As trilayers show that the exchangecoupling diminishes with spatial separation between the layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Anisotropic magnetoresistance in nanocontacts|D. Jacob,J. Fernandez-Rossier,J. J. Palacios###
(574742, 574742)
 We present ab initio calculations of the evolution of anisotropicmagnetoresistance (AMR) in Ni nanocontacts from the ballistic to the tunnelregime.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Anisotropic magnetoresistance in nanocontacts|D. Jacob,J. Fernandez-Rossier,J. J. Palacios###
(574794, 574794)
 In systems without localized states, like chemically pure breakjunctions, large AMR only occurs if the orbital polarization of the current islarge, regardless of the anisotropy of the density of states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Anisotropic magnetoresistance in nanocontacts|D. Jacob,J. Fernandez-Rossier,J. J. Palacios###
(574866, 574866)
 In systems thatdisplay localized states close to the Fermi energy, like a single electrontransistor with ferromagnetic electrodes, large AMR is related to the variationof the Fermi energy as a function of the magnetization direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Possible co-existence of local itinerancy and global localization in a quasi-one-dimensional conductor|A. Narduzzo A. Enayati-Rad,S. Horii,N. E. Hussey###
(574987, 574987)
 In the chain compound PrBa2Cu4O8 localization appears simultaneouslywith a dimensional crossover in the electronic ground state when the scatteringrate in the chains exceeds the hopping rate between the chains.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PrBa2Cu4O8
###Possible co-existence of local itinerancy and global localization in a quasi-one-dimensional conductor|A. Narduzzo A. Enayati-Rad,S. Horii,N. E. Hussey###
(574995, 575001)
 In the chain compound PrBa2Cu4O8 localization appears simultaneouslywith a dimensional crossover in the electronic ground state when the scatteringrate in the chains exceeds the hopping rate between the chains.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.26666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13333333333333333,0,0,0.06666666666666667,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PrBa2Cu4O8
###Possible co-existence of local itinerancy and global localization in a quasi-one-dimensional conductor|A. Narduzzo A. Enayati-Rad,S. Horii,N. E. Hussey###
(575082, 575088)
 Here we reportthe discovery of a large, transverse magnetoresistance in PrBa2Cu4O8in the localized regime.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.26666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13333333333333333,0,0,0.06666666666666667,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Os
###An analytically solvable model of the effect of magnetic breakdown on angle-dependent magnetoresistance in a quasi-two-dimensional metal|Andrzej Nowojewski,Paul A. Goddard,Stephen J. Blundell###
(575251, 575251)
 We have developed an analytical model of angle-dependent magnetoresistanceoscillations (AMROs) in a quasi-two-dimensional metal in which magneticbreakdown occurs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu(NCS)2
###An analytically solvable model of the effect of magnetic breakdown on angle-dependent magnetoresistance in a quasi-two-dimensional metal|Andrzej Nowojewski,Paul A. Goddard,Stephen J. Blundell###
(575365, 575371)
 The model takes account of all the contributions fromquasiparticles undergoing both magnetic breakdown and Bragg reflection at eachjunction and allows extremely efficient simulation of data which can becompared with recent experimental results on the organic metalkappa-ET2Cu(NCS)2.
Featurization terminated normally.
0,0,0,0,0,0.2857142857142857,0.2857142857142857,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Os
###An analytically solvable model of the effect of magnetic breakdown on angle-dependent magnetoresistance in a quasi-two-dimensional metal|Andrzej Nowojewski,Paul A. Goddard,Stephen J. Blundell###
(575377, 575377)
 AMROs resulting from both closed and open orbits emergenaturally at low field, and the model enables the transition to breakdown-AMROswith increasing field to be described in detail.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Os
###An analytically solvable model of the effect of magnetic breakdown on angle-dependent magnetoresistance in a quasi-two-dimensional metal|Andrzej Nowojewski,Paul A. Goddard,Stephen J. Blundell###
(575424, 575424)
 AMROs resulting from both closed and open orbits emergenaturally at low field, and the model enables the transition to breakdown-AMROswith increasing field to be described in detail.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CeIrIn5
###A precursor state to unconventional superconductivity in CeIrIn${_5}$|Sunil Nair,S. Wirth,M. Nicklas,J. L. Sarrao,J. D. Thompson,Z. Fisk,F. Steglich###
(575466, 575469)
A precursor state to unconventional superconductivity in CeIrIn5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7142857142857143,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 50, 'mK', 1],[49.0, 15, 'T', 1]

CeIrIn5
###A precursor state to unconventional superconductivity in CeIrIn${_5}$|Sunil Nair,S. Wirth,M. Nicklas,J. L. Sarrao,J. D. Thompson,Z. Fisk,F. Steglich###
(575495, 575498)
 We present sensitive measurements of the Hall effect and magnetoresistance inCeIrIn5 down to temperatures of 50 mK and magnetic fields up to 15 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7142857142857143,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 50, 'mK', 0],[20.0, 15, 'T', 0]

C
###Thermoelectrical manipulation of nano-magnets|A. M. Kadigrobov,R. I. Shekhter,M. Jonson,V. Korenivski###
(575942, 575942)
 Such a spin-thermionic parallel-to-antiparallel switching causesmagnetoresistance oscillations where the frequency can be controlled by properbiasing from essentially D<missing VAR>C to G<missing VAR>Hz.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Intrinsic Superconductivity at 25 K in Highly Oriented Pyrolytic Graphite|P. Esquinazi,N. García,J. Barzola-Quiquia,J. C. González,M. Muñoz,P. Rödiger,K. Schindler,J. -L. Yao,M. Ziese###
(576021, 576021)
 High resolution magnetoresistance data in highly oriented pyrolytic graphitethin samples manifest non-homogenous superconductivity with criticaltemperature Tc sim 25 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 25, 'K', 1]

As
###Intrinsic Superconductivity at 25 K in Highly Oriented Pyrolytic Graphite|P. Esquinazi,N. García,J. Barzola-Quiquia,J. C. González,M. Muñoz,P. Rödiger,K. Schindler,J. -L. Yao,M. Ziese###
(576132, 576132)
 As possible origin of the superconductivity in graphite we discussinterior-gap superconductivity when two very different electronic masses arepresent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 25, 'K', 4]

At
###Fractional microwave-induced resistance oscillations|I. A. Dmitriev,A. D. Mirlin,D. G. Polyakov###
(576557, 576557)
 At moderate magnetic field, two single-photonmechanisms become important.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 2, 'D', 2]

Ni81Fe19
###Broadband ferromagnetic resonance of Ni81Fe19 wires using a rectifying effect|A. Yamaguchi,K. Motoi,H. Miyajima,Y. Miyashita,Y. Sanada###
(577102, 577105)
Broadband ferromagnetic resonance of Ni81Fe19 wires using a rectifying effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.19,0,0.81,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni81Fe19
###Broadband ferromagnetic resonance of Ni81Fe19 wires using a rectifying effect|A. Yamaguchi,K. Motoi,H. Miyajima,Y. Miyashita,Y. Sanada###
(577139, 577142)
 The broadband ferromagnetic resonance measurement using the rectifying effectof Ni81Fe19 wire has been investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.19,0,0.81,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(CPW)
###Broadband ferromagnetic resonance of Ni81Fe19 wires using a rectifying effect|A. Yamaguchi,K. Motoi,H. Miyajima,Y. Miyashita,Y. Sanada###
(577180, 577184)
 One wire is deposited on the centerstrip line of the coplanar waveguide (CPW) and the other one deposited betweentwo strip lines of CPW.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CPW
###Broadband ferromagnetic resonance of Ni81Fe19 wires using a rectifying effect|A. Yamaguchi,K. Motoi,H. Miyajima,Y. Miyashita,Y. Sanada###
(577207, 577209)
 One wire is deposited on the centerstrip line of the coplanar waveguide (CPW) and the other one deposited betweentwo strip lines of CPW.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Quantum fluctuations in ultranarrow superconducting nanowires|M. Zgirski,K. -P. Riikonen,V. Touboltsev,K. Yu. Arutyunov###
(577395, 577395)
 In nanowires with effective diameterleq 15 nm the R(T) dependences are much wider than predicted by the modelof thermally activated phase slips.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 15, 'nm', 0]

HOP
###Electronic Conductivity Upturn of HOPG Contrast to Transport Properties of Polycrystal Graphite|Zhiming Wang,Feng Xu,Chao Lu,He Zhang,Qingyu Xu,Jinan Zhu###
(577573, 577575)
Electronic Conductivity Upturn of HOPG<missing VAR> Contrast to Transport Properties of Polycrystal Graphite.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 20, 'K', 3],[151.0, 0, ',', 3],[154.0, 4, ',', 3],[157.0, 8, ',', 3],[159.0, 12, 'T', 3]

HOP
###Electronic Conductivity Upturn of HOPG Contrast to Transport Properties of Polycrystal Graphite|Zhiming Wang,Feng Xu,Chao Lu,He Zhang,Qingyu Xu,Jinan Zhu###
(577610, 577612)
 The transport properties of highly oriented pyrolitic graphite (HOPG) andpolycrystal graphite have been studied.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 20, 'K', 2],[114.0, 0, ',', 2],[117.0, 4, ',', 2],[120.0, 8, ',', 2],[122.0, 12, 'T', 2]

HOP
###Electronic Conductivity Upturn of HOPG Contrast to Transport Properties of Polycrystal Graphite|Zhiming Wang,Feng Xu,Chao Lu,He Zhang,Qingyu Xu,Jinan Zhu###
(577638, 577640)
 The electric conductivity of HOPG<missing VAR> isseveral times larger than that of the polycrystal graphite.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 20, 'K', 1],[86.0, 0, ',', 1],[89.0, 4, ',', 1],[92.0, 8, ',', 1],[94.0, 12, 'T', 1]

K
###Electronic Conductivity Upturn of HOPG Contrast to Transport Properties of Polycrystal Graphite|Zhiming Wang,Feng Xu,Chao Lu,He Zhang,Qingyu Xu,Jinan Zhu###
(577721, 577721)
 Along with thelarge magnetoresistances (MR), the polycrystal graphite show the accordantsemiconductor-like character in a wide temperature (roughly range from 20K to120K) under 0, 4, 8, 12 T applied magnetic field, while themagnetic-field-induced metal-semiconductor-like transition was only found inHOPG<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 20, 'K', 0],[5.0, 0, ',', 0],[8.0, 4, ',', 0],[11.0, 8, ',', 0],[13.0, 12, 'T', 0]

HOP
###Electronic Conductivity Upturn of HOPG Contrast to Transport Properties of Polycrystal Graphite|Zhiming Wang,Feng Xu,Chao Lu,He Zhang,Qingyu Xu,Jinan Zhu###
(577771, 577773)
 Along with thelarge magnetoresistances (MR), the polycrystal graphite show the accordantsemiconductor-like character in a wide temperature (roughly range from 20K to120K) under 0, 4, 8, 12 T applied magnetic field, while themagnetic-field-induced metal-semiconductor-like transition was only found inHOPG<missing VAR>.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 20, 'K', 0],[45.0, 0, ',', 0],[42.0, 4, ',', 0],[39.0, 8, ',', 0],[37.0, 12, 'T', 0]

HOP
###Electronic Conductivity Upturn of HOPG Contrast to Transport Properties of Polycrystal Graphite|Zhiming Wang,Feng Xu,Chao Lu,He Zhang,Qingyu Xu,Jinan Zhu###
(577802, 577804)
 The difference of transport properties originates from the Coulombinteraction quasipartical in HOPG<missing VAR> graphite layers in contrast with the grainboundary scattering in the polycrystal graphite.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 20, 'K', 1],[76.0, 0, ',', 1],[73.0, 4, ',', 1],[70.0, 8, ',', 1],[68.0, 12, 'T', 1]

La0.6Sr0.4MnO3
###Magnetocapacitive La0.6Sr0.4MnO3 0.7Pb(Mg0.33Nb0.67)O3 0.3PbTiO3 epitaxial heterostructures|Ayan Roy Chaudhuri,S. B. Krupanidhi,P. Mandal,A. Sundaresan###
(577845, 577851)
Magnetocapacitive La0.6Sr0.4MnO3 0.7Pb(Mg0.33Nb0.67)O3 0.3PbTiO3 epitaxial heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.08,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.12,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[1.0, 0.7, 'Pb', 0],[10.0, 0.3, 'PbTiO', 0],[31.0, 0.7, 'Pb', 1],[40.0, 0.3, 'PbTiO', 1]

(Mg0.33Nb0.67)O3
###Magnetocapacitive La0.6Sr0.4MnO3 0.7Pb(Mg0.33Nb0.67)O3 0.3PbTiO3 epitaxial heterostructures|Ayan Roy Chaudhuri,S. B. Krupanidhi,P. Mandal,A. Sundaresan###
(577853, 577860)
Magnetocapacitive La0.6Sr0.4MnO3 0.7Pb(Mg0.33Nb0.67)O3 0.3PbTiO3 epitaxial heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0.0825,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1675,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[1.0, 0.7, 'Pb', 0],[1.0, 0.3, 'PbTiO', 0],[22.0, 0.7, 'Pb', 1],[31.0, 0.3, 'PbTiO', 1]

La0.6Sr0.4MnO3
###Magnetocapacitive La0.6Sr0.4MnO3 0.7Pb(Mg0.33Nb0.67)O3 0.3PbTiO3 epitaxial heterostructures|Ayan Roy Chaudhuri,S. B. Krupanidhi,P. Mandal,A. Sundaresan###
(577875, 577881)
 Epitaxial heterostructures of La0.6Sr0.4MnO3 0.7Pb(Mg0.33Nb0.67)O3 0.3PbTiO3were fabricated on LaNiO3 coated LaAlO3 (100) substrates by pulsed laserablation.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.08,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.12,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 0.7, 'Pb', 1],[14.0, 0.3, 'PbTiO', 1],[1.0, 0.7, 'Pb', 0],[10.0, 0.3, 'PbTiO', 0]

(Mg0.33Nb0.67)O3
###Magnetocapacitive La0.6Sr0.4MnO3 0.7Pb(Mg0.33Nb0.67)O3 0.3PbTiO3 epitaxial heterostructures|Ayan Roy Chaudhuri,S. B. Krupanidhi,P. Mandal,A. Sundaresan###
(577883, 577890)
 Epitaxial heterostructures of La0.6Sr0.4MnO3 0.7Pb(Mg0.33Nb0.67)O3 0.3PbTiO3were fabricated on LaNiO3 coated LaAlO3 (100) substrates by pulsed laserablation.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0.0825,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1675,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 0.7, 'Pb', 1],[22.0, 0.3, 'PbTiO', 1],[1.0, 0.7, 'Pb', 0],[1.0, 0.3, 'PbTiO', 0]

LaNiO3
###Magnetocapacitive La0.6Sr0.4MnO3 0.7Pb(Mg0.33Nb0.67)O3 0.3PbTiO3 epitaxial heterostructures|Ayan Roy Chaudhuri,S. B. Krupanidhi,P. Mandal,A. Sundaresan###
(577901, 577904)
 Epitaxial heterostructures of La0.6Sr0.4MnO3 0.7Pb(Mg0.33Nb0.67)O3 0.3PbTiO3were fabricated on LaNiO3 coated LaAlO3 (100) substrates by pulsed laserablation.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 0.7, 'Pb', 1],[40.0, 0.3, 'PbTiO', 1],[19.0, 0.7, 'Pb', 0],[10.0, 0.3, 'PbTiO', 0]

LaAlO3
###Magnetocapacitive La0.6Sr0.4MnO3 0.7Pb(Mg0.33Nb0.67)O3 0.3PbTiO3 epitaxial heterostructures|Ayan Roy Chaudhuri,S. B. Krupanidhi,P. Mandal,A. Sundaresan###
(577908, 577911)
 Epitaxial heterostructures of La0.6Sr0.4MnO3 0.7Pb(Mg0.33Nb0.67)O3 0.3PbTiO3were fabricated on LaNiO3 coated LaAlO3 (100) substrates by pulsed laserablation.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 0.7, 'Pb', 1],[47.0, 0.3, 'PbTiO', 1],[26.0, 0.7, 'Pb', 0],[17.0, 0.3, 'PbTiO', 0]

N
###A Nuclear Magnetic Resonance Study on Rubrene-cobalt Nano-composites|Masashi Shiraishi,Haruka Kusai,Ryo Nouchi,Takayuki Nozaki,Teruya Shinjo,Yoshishige Suzuki,Makoto Yoshida,Masashi Takigawa###
(578130, 578130)
 We implemented a nuclear magnetic resonance (NMR) study on rubrene(C42H28)-Conano-composites that exhibit an enhanced magnetoresistance (MR) ratio of 80%.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 80, '%', 0],[49.0, 59, 'Co', 1]

(C42H28)
###A Nuclear Magnetic Resonance Study on Rubrene-cobalt Nano-composites|Masashi Shiraishi,Haruka Kusai,Ryo Nouchi,Takayuki Nozaki,Teruya Shinjo,Yoshishige Suzuki,Makoto Yoshida,Masashi Takigawa###
(578140, 578145)
 We implemented a nuclear magnetic resonance (NMR) study on rubrene(C42H28)-Conano-composites that exhibit an enhanced magnetoresistance (MR) ratio of 80%.
Featurization successful!
0.4,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 80, '%', 0],[34.0, 59, 'Co', 1]

Co
###A Nuclear Magnetic Resonance Study on Rubrene-cobalt Nano-composites|Masashi Shiraishi,Haruka Kusai,Ryo Nouchi,Takayuki Nozaki,Teruya Shinjo,Yoshishige Suzuki,Makoto Yoshida,Masashi Takigawa###
(578147, 578147)
 We implemented a nuclear magnetic resonance (NMR) study on rubrene(C42H28)-Conano-composites that exhibit an enhanced magnetoresistance (MR) ratio of 80%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 80, '%', 0],[32.0, 59, 'Co', 1]

N
###A Nuclear Magnetic Resonance Study on Rubrene-cobalt Nano-composites|Masashi Shiraishi,Haruka Kusai,Ryo Nouchi,Takayuki Nozaki,Teruya Shinjo,Yoshishige Suzuki,Makoto Yoshida,Masashi Takigawa###
(578181, 578181)
The 59Co NMR spin echo experiment enabled clarification of the hyperfine fieldof Co at the interface between the ferromagnet and the molecules, which has notbeen investigated for molecular spintronics.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 80, '%', 1],[2.0, 59, 'Co', 0]

Co
###A Nuclear Magnetic Resonance Study on Rubrene-cobalt Nano-composites|Masashi Shiraishi,Haruka Kusai,Ryo Nouchi,Takayuki Nozaki,Teruya Shinjo,Yoshishige Suzuki,Makoto Yoshida,Masashi Takigawa###
(578206, 578206)
The 59Co NMR spin echo experiment enabled clarification of the hyperfine fieldof Co at the interface between the ferromagnet and the molecules, which has notbeen investigated for molecular spintronics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 80, '%', 1],[27.0, 59, 'Co', 0]

Co
###A Nuclear Magnetic Resonance Study on Rubrene-cobalt Nano-composites|Masashi Shiraishi,Haruka Kusai,Ryo Nouchi,Takayuki Nozaki,Teruya Shinjo,Yoshishige Suzuki,Makoto Yoshida,Masashi Takigawa###
(578258, 578258)
 An enhanced hyperfine field of theCo was observed in the rubrene-Co nano-composites, which may be related to theenhancement of the MR ratio.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 80, '%', 2],[79.0, 59, 'Co', 1]

Co
###A Nuclear Magnetic Resonance Study on Rubrene-cobalt Nano-composites|Masashi Shiraishi,Haruka Kusai,Ryo Nouchi,Takayuki Nozaki,Teruya Shinjo,Yoshishige Suzuki,Makoto Yoshida,Masashi Takigawa###
(578270, 578270)
 An enhanced hyperfine field of theCo was observed in the rubrene-Co nano-composites, which may be related to theenhancement of the MR ratio.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 80, '%', 2],[91.0, 59, 'Co', 1]

La1-xCa
###Unusual temperature dependence of the oxygen-isotope effect on the exchange-energy of $La_{1-x}Ca_xMnO_3$ at high temperatures|Guo-meng Zhao,John Mann###
(578387, 578391)
Unusual temperature dependence of the oxygen-isotope effect on the exchange-energy of La1-xCax<missing VAR>MnO3 at high temperatures.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[51.0, 700, 'K', 1],[134.0, 400, 'K', 3]

MnO3
###Unusual temperature dependence of the oxygen-isotope effect on the exchange-energy of $La_{1-x}Ca_xMnO_3$ at high temperatures|Guo-meng Zhao,John Mann###
(578393, 578395)
Unusual temperature dependence of the oxygen-isotope effect on the exchange-energy of La1-xCax<missing VAR>MnO3 at high temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 700, 'K', 1],[130.0, 400, 'K', 3]

La1-xCa
###Unusual temperature dependence of the oxygen-isotope effect on the exchange-energy of $La_{1-x}Ca_xMnO_3$ at high temperatures|Guo-meng Zhao,John Mann###
(578428, 578432)
 We report magnetic susceptibility chi(T) measurements on oxygen-isotopeexchanged La1-xCax<missing VAR>MnO3y<missing VAR> up to 700 K.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[10.0, 700, 'K', 0],[93.0, 400, 'K', 2]

MnO3
###Unusual temperature dependence of the oxygen-isotope effect on the exchange-energy of $La_{1-x}Ca_xMnO_3$ at high temperatures|Guo-meng Zhao,John Mann###
(578434, 578436)
 We report magnetic susceptibility chi(T) measurements on oxygen-isotopeexchanged La1-xCax<missing VAR>MnO3y<missing VAR> up to 700 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 700, 'K', 0],[89.0, 400, 'K', 2]

K
###Unusual temperature dependence of the oxygen-isotope effect on the exchange-energy of $La_{1-x}Ca_xMnO_3$ at high temperatures|Guo-meng Zhao,John Mann###
(578510, 578510)
 The isotope effect on J<missing VAR> decreases with temperature up to400 K and then increases again with temperature above 400 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 700, 'K', 2],[15.0, 400, 'K', 0]

SrTiO3
###Vanishing Hall Coefficient in the Extreme Quantum Limit in Photocarrier-Doped SrTiO3|Y. Kozuka,T. Susaki,H. Y. Hwang###
(578632, 578635)
Vanishing Hall Coefficient in the Extreme Quantum Limit in Photocarrier-Doped SrTiO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Vanishing Hall Coefficient in the Extreme Quantum Limit in Photocarrier-Doped SrTiO3|Y. Kozuka,T. Susaki,H. Y. Hwang###
(578665, 578668)
 We have investigated the extreme quantum limit of photogenerated electrons inquantum paraelectric SrTiO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Vanishing Hall Coefficient in the Extreme Quantum Limit in Photocarrier-Doped SrTiO3|Y. Kozuka,T. Susaki,H. Y. Hwang###
(578713, 578713)
 At low temperature, the magnetoresistance and Hallresistivity saturate at high magnetic field, deviating from conventionalbehavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Vanishing Hall Coefficient in the Extreme Quantum Limit in Photocarrier-Doped SrTiO3|Y. Kozuka,T. Susaki,H. Y. Hwang###
(578752, 578752)
 As a result, the Hall coefficient vanishes on the scale of the ratioof the Landau level splitting to the thermal energy, indicating the essentialrole of lowest Landau level occupancy, as limited by thermal broadening.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi0.67Ca0.33MnO3
###Magnetic states and spin-glass properties in Bi0.67Ca0.33MnO3: macroscopic ac measurements and neutron scattering|M. Giot,A. Pautrat,G. Andre,D. Saurel,M. Hervieu,J. Rodriguez-Carvajal###
(578852, 578858)
Magnetic states and spin-glass properties in Bi0.67Ca0.33MnO3 macroscopic ac measurements and neutron scattering.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.066,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.134,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 39, 'K', 2]

Bi1-xCa
###Magnetic states and spin-glass properties in Bi0.67Ca0.33MnO3: macroscopic ac measurements and neutron scattering|M. Giot,A. Pautrat,G. Andre,D. Saurel,M. Hervieu,J. Rodriguez-Carvajal###
(578891, 578895)
 We report on the magnetic properties of the manganite Bi1-xCax<missing VAR>MnO3(x<missing VAR>0.33) at low temperature.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[73.0, 39, 'K', 1]

MnO3
###Magnetic states and spin-glass properties in Bi0.67Ca0.33MnO3: macroscopic ac measurements and neutron scattering|M. Giot,A. Pautrat,G. Andre,D. Saurel,M. Hervieu,J. Rodriguez-Carvajal###
(578897, 578899)
 We report on the magnetic properties of the manganite Bi1-xCax<missing VAR>MnO3(x<missing VAR>0.33) at low temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 39, 'K', 1]

In
###Magnetic states and spin-glass properties in Bi0.67Ca0.33MnO3: macroscopic ac measurements and neutron scattering|M. Giot,A. Pautrat,G. Andre,D. Saurel,M. Hervieu,J. Rodriguez-Carvajal###
(579022, 579022)
 In contrast to Pr1-xCax<missing VAR>MnO3(x<missing VAR>0.3-0.33) which exhibits a mesoscopic phase separation responsible for afield driven percolation, the glassy and short range ferromagnetic orderobserved here does not cause colossal magnetoresistance (CMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 39, 'K', 2]

Pr1-xCa
###Magnetic states and spin-glass properties in Bi0.67Ca0.33MnO3: macroscopic ac measurements and neutron scattering|M. Giot,A. Pautrat,G. Andre,D. Saurel,M. Hervieu,J. Rodriguez-Carvajal###
(579028, 579032)
 In contrast to Pr1-xCax<missing VAR>MnO3(x<missing VAR>0.3-0.33) which exhibits a mesoscopic phase separation responsible for afield driven percolation, the glassy and short range ferromagnetic orderobserved here does not cause colossal magnetoresistance (CMR).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[60.0, 39, 'K', 2]

MnO3
###Magnetic states and spin-glass properties in Bi0.67Ca0.33MnO3: macroscopic ac measurements and neutron scattering|M. Giot,A. Pautrat,G. Andre,D. Saurel,M. Hervieu,J. Rodriguez-Carvajal###
(579034, 579036)
 In contrast to Pr1-xCax<missing VAR>MnO3(x<missing VAR>0.3-0.33) which exhibits a mesoscopic phase separation responsible for afield driven percolation, the glassy and short range ferromagnetic orderobserved here does not cause colossal magnetoresistance (CMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 39, 'K', 2]

C
###Magnetic states and spin-glass properties in Bi0.67Ca0.33MnO3: macroscopic ac measurements and neutron scattering|M. Giot,A. Pautrat,G. Andre,D. Saurel,M. Hervieu,J. Rodriguez-Carvajal###
(579102, 579102)
 In contrast to Pr1-xCax<missing VAR>MnO3(x<missing VAR>0.3-0.33) which exhibits a mesoscopic phase separation responsible for afield driven percolation, the glassy and short range ferromagnetic orderobserved here does not cause colossal magnetoresistance (CMR).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 39, 'K', 2]

Ga
###Huge tunnelling anisotropic magnetoresistance in (Ga,Mn)As nanoconstrictions|A. D. Giddings,O. N. Makarovsky,M. N. Khalid,S. Yasin,K. W. Edmonds,R. P. Campion,J. Wunderlich,T. Jungwirth,D. A. Williams,B. L. Gallagher,C. T. Foxon###
(579403, 579403)
Huge tunnelling anisotropic magnetoresistance in (Ga,Mn)As nanoconstrictions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 1300, '%', 1],[93.0, 5, 'nm', 2]

Mn
###Huge tunnelling anisotropic magnetoresistance in (Ga,Mn)As nanoconstrictions|A. D. Giddings,O. N. Makarovsky,M. N. Khalid,S. Yasin,K. W. Edmonds,R. P. Campion,J. Wunderlich,T. Jungwirth,D. A. Williams,B. L. Gallagher,C. T. Foxon###
(579405, 579405)
Huge tunnelling anisotropic magnetoresistance in (Ga,Mn)As nanoconstrictions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 1300, '%', 1],[91.0, 5, 'nm', 2]

As
###Huge tunnelling anisotropic magnetoresistance in (Ga,Mn)As nanoconstrictions|A. D. Giddings,O. N. Makarovsky,M. N. Khalid,S. Yasin,K. W. Edmonds,R. P. Campion,J. Wunderlich,T. Jungwirth,D. A. Williams,B. L. Gallagher,C. T. Foxon###
(579407, 579407)
Huge tunnelling anisotropic magnetoresistance in (Ga,Mn)As nanoconstrictions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 1300, '%', 1],[89.0, 5, 'nm', 2]

Ga
###Huge tunnelling anisotropic magnetoresistance in (Ga,Mn)As nanoconstrictions|A. D. Giddings,O. N. Makarovsky,M. N. Khalid,S. Yasin,K. W. Edmonds,R. P. Campion,J. Wunderlich,T. Jungwirth,D. A. Williams,B. L. Gallagher,C. T. Foxon###
(579438, 579438)
 We report large anisotropic magnetoresistance (AMR) behaviours in singlelateral (Ga,Mn)As nanoconstriction of up to 1300%, along with large multistabletelegraphic switching.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 1300, '%', 0],[58.0, 5, 'nm', 1]

Mn
###Huge tunnelling anisotropic magnetoresistance in (Ga,Mn)As nanoconstrictions|A. D. Giddings,O. N. Makarovsky,M. N. Khalid,S. Yasin,K. W. Edmonds,R. P. Campion,J. Wunderlich,T. Jungwirth,D. A. Williams,B. L. Gallagher,C. T. Foxon###
(579440, 579440)
 We report large anisotropic magnetoresistance (AMR) behaviours in singlelateral (Ga,Mn)As nanoconstriction of up to 1300%, along with large multistabletelegraphic switching.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 1300, '%', 0],[56.0, 5, 'nm', 1]

As
###Huge tunnelling anisotropic magnetoresistance in (Ga,Mn)As nanoconstrictions|A. D. Giddings,O. N. Makarovsky,M. N. Khalid,S. Yasin,K. W. Edmonds,R. P. Campion,J. Wunderlich,T. Jungwirth,D. A. Williams,B. L. Gallagher,C. T. Foxon###
(579442, 579442)
 We report large anisotropic magnetoresistance (AMR) behaviours in singlelateral (Ga,Mn)As nanoconstriction of up to 1300%, along with large multistabletelegraphic switching.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 1300, '%', 0],[54.0, 5, 'nm', 1]

Ga
###Huge tunnelling anisotropic magnetoresistance in (Ga,Mn)As nanoconstrictions|A. D. Giddings,O. N. Makarovsky,M. N. Khalid,S. Yasin,K. W. Edmonds,R. P. Campion,J. Wunderlich,T. Jungwirth,D. A. Williams,B. L. Gallagher,C. T. Foxon###
(579501, 579501)
 The nanoconstriction devices are fabricated usinghigh-resolution electron beam lithography of a 5 nm thick (Ga,Mn)As epilayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 1300, '%', 1],[5.0, 5, 'nm', 0]

Mn
###Huge tunnelling anisotropic magnetoresistance in (Ga,Mn)As nanoconstrictions|A. D. Giddings,O. N. Makarovsky,M. N. Khalid,S. Yasin,K. W. Edmonds,R. P. Campion,J. Wunderlich,T. Jungwirth,D. A. Williams,B. L. Gallagher,C. T. Foxon###
(579503, 579503)
 The nanoconstriction devices are fabricated usinghigh-resolution electron beam lithography of a 5 nm thick (Ga,Mn)As epilayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 1300, '%', 1],[7.0, 5, 'nm', 0]

As
###Huge tunnelling anisotropic magnetoresistance in (Ga,Mn)As nanoconstrictions|A. D. Giddings,O. N. Makarovsky,M. N. Khalid,S. Yasin,K. W. Edmonds,R. P. Campion,J. Wunderlich,T. Jungwirth,D. A. Williams,B. L. Gallagher,C. T. Foxon###
(579505, 579505)
 The nanoconstriction devices are fabricated usinghigh-resolution electron beam lithography of a 5 nm thick (Ga,Mn)As epilayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 1300, '%', 1],[9.0, 5, 'nm', 0]

La1-x
###On the electronic structure of the charge-ordered phase in epitaxial and polycrystalline La1-xCaxMnO3 (x = 0.55, 0.67) perovskite manganites|Rainer Schmidt###
(579654, 579657)
On the electronic structure of the charge-ordered phase in epitaxial and polycrystalline La1-xCaxMnO3 (x<missing VAR>  0.55, 0.67) perovskite manganites.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[10.0, 0.55, ',', 0],[66.0, 0.55, ',', 1]

MnO3
###On the electronic structure of the charge-ordered phase in epitaxial and polycrystalline La1-xCaxMnO3 (x = 0.55, 0.67) perovskite manganites|Rainer Schmidt###
(579659, 579661)
On the electronic structure of the charge-ordered phase in epitaxial and polycrystalline La1-xCaxMnO3 (x<missing VAR>  0.55, 0.67) perovskite manganites.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 0.55, ',', 0],[62.0, 0.55, ',', 1]

In
###On the electronic structure of the charge-ordered phase in epitaxial and polycrystalline La1-xCaxMnO3 (x = 0.55, 0.67) perovskite manganites|Rainer Schmidt###
(579678, 579678)
 In this work the charge transport properties of charge ordered (CO)La1-xCaxMnO3 (LCMO) (x<missing VAR> 0.55, 0.67) epitaxial thin films and polycrystals arediscussed following the recent controversy of localised electron states vs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 0.55, ',', 1],[45.0, 0.55, ',', 0]

(CO)
###On the electronic structure of the charge-ordered phase in epitaxial and polycrystalline La1-xCaxMnO3 (x = 0.55, 0.67) perovskite manganites|Rainer Schmidt###
(579698, 579701)
 In this work the charge transport properties of charge ordered (CO)La1-xCaxMnO3 (LCMO) (x<missing VAR> 0.55, 0.67) epitaxial thin films and polycrystals arediscussed following the recent controversy of localised electron states vs.
Featurization successful!
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 0.55, ',', 1],[22.0, 0.55, ',', 0]

La1-x
###On the electronic structure of the charge-ordered phase in epitaxial and polycrystalline La1-xCaxMnO3 (x = 0.55, 0.67) perovskite manganites|Rainer Schmidt###
(579704, 579707)
 In this work the charge transport properties of charge ordered (CO)La1-xCaxMnO3 (LCMO) (x<missing VAR> 0.55, 0.67) epitaxial thin films and polycrystals arediscussed following the recent controversy of localised electron states vs.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[37.0, 0.55, ',', 1],[16.0, 0.55, ',', 0]

MnO3
###On the electronic structure of the charge-ordered phase in epitaxial and polycrystalline La1-xCaxMnO3 (x = 0.55, 0.67) perovskite manganites|Rainer Schmidt###
(579709, 579711)
 In this work the charge transport properties of charge ordered (CO)La1-xCaxMnO3 (LCMO) (x<missing VAR> 0.55, 0.67) epitaxial thin films and polycrystals arediscussed following the recent controversy of localised electron states vs.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 0.55, ',', 1],[12.0, 0.55, ',', 0]

O
###On the electronic structure of the charge-ordered phase in epitaxial and polycrystalline La1-xCaxMnO3 (x = 0.55, 0.67) perovskite manganites|Rainer Schmidt###
(579717, 579717)
 In this work the charge transport properties of charge ordered (CO)La1-xCaxMnO3 (LCMO) (x<missing VAR> 0.55, 0.67) epitaxial thin films and polycrystals arediscussed following the recent controversy of localised electron states vs.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 0.55, ',', 1],[6.0, 0.55, ',', 0]

C
###On the electronic structure of the charge-ordered phase in epitaxial and polycrystalline La1-xCaxMnO3 (x = 0.55, 0.67) perovskite manganites|Rainer Schmidt###
(579780, 579780)
weakly or de- localised charge density wave (CD<missing VAR>W) states in CO manganites.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 0.55, ',', 2],[57.0, 0.55, ',', 1]

W
###On the electronic structure of the charge-ordered phase in epitaxial and polycrystalline La1-xCaxMnO3 (x = 0.55, 0.67) perovskite manganites|Rainer Schmidt###
(579782, 579782)
weakly or de- localised charge density wave (CD<missing VAR>W) states in CO manganites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 0.55, ',', 2],[59.0, 0.55, ',', 1]

CO
###On the electronic structure of the charge-ordered phase in epitaxial and polycrystalline La1-xCaxMnO3 (x = 0.55, 0.67) perovskite manganites|Rainer Schmidt###
(579789, 579790)
weakly or de- localised charge density wave (CD<missing VAR>W) states in CO manganites.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 0.55, ',', 2],[66.0, 0.55, ',', 1]

CO
###On the electronic structure of the charge-ordered phase in epitaxial and polycrystalline La1-xCaxMnO3 (x = 0.55, 0.67) perovskite manganites|Rainer Schmidt###
(579874, 579875)
 temperature,magnetoresistance and admittance spectroscopy measurements, which all indicateda localised electronic structure in the single CO phase.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[207.0, 0.55, ',', 6],[151.0, 0.55, ',', 5]

Cu/Co
###First Principle Noncollinear Transport Calculation and Interfacial Spin-flipping of Cu/Co Multilayers|Ling Tang,Shuai Wang###
(579934, 579936)
First Principle Noncollinear Transport Calculation and Interfacial Spin-flipping of Cu/Co Multilayers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

In
###First Principle Noncollinear Transport Calculation and Interfacial Spin-flipping of Cu/Co Multilayers|Ling Tang,Shuai Wang###
(579941, 579941)
 In this paper the first principle noncollinear transport calculation forCu/Co(111) including interfacial spin-flipping was performed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P1-e
###First Principle Noncollinear Transport Calculation and Interfacial Spin-flipping of Cu/Co Multilayers|Ling Tang,Shuai Wang###
(580114, 580117)
 For certain distribution width,our defined spin-flipping ratio coincides with the range of experimentalspin-flipping probability P1-e-delta, where delta0.25pm0.1.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

Co/Cu/Co
###First Principle Noncollinear Transport Calculation and Interfacial Spin-flipping of Cu/Co Multilayers|Ling Tang,Shuai Wang###
(580137, 580141)
 Themagnetoresistance in Co/Cu/Co spin valve system including interfacialspin-flipping has also been calculated.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

F
###Quantized spin waves and perpendicular standing spin waves stimulated by current in a single-layered ferromagnetic wire|A. Yamaguchi,K. Motoi,H. Miyajima###
(580224, 580224)
 The rectifying effect of radio-frequency (R<missing VAR>F) current is highly sensitive interms of the spatial spin distribution and dynamics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Quantized spin waves and perpendicular standing spin waves stimulated by current in a single-layered ferromagnetic wire|A. Yamaguchi,K. Motoi,H. Miyajima###
(580286, 580286)
 It emerged that anadditional spin wave mode was stimulated by the direct-current (D<missing VAR>C) current andthat this spin wave was detectable via rectification of the R<missing VAR>F current.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Quantized spin waves and perpendicular standing spin waves stimulated by current in a single-layered ferromagnetic wire|A. Yamaguchi,K. Motoi,H. Miyajima###
(580315, 580315)
 It emerged that anadditional spin wave mode was stimulated by the direct-current (D<missing VAR>C) current andthat this spin wave was detectable via rectification of the R<missing VAR>F current.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Quantized spin waves and perpendicular standing spin waves stimulated by current in a single-layered ferromagnetic wire|A. Yamaguchi,K. Motoi,H. Miyajima###
(580408, 580408)
 The nonlinear spin dynamicsaccompanying additional spin waves are studied as functions of the R<missing VAR>F and D<missing VAR>Ccurrents, the external magnetic field, and the applied field direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Quantized spin waves and perpendicular standing spin waves stimulated by current in a single-layered ferromagnetic wire|A. Yamaguchi,K. Motoi,H. Miyajima###
(580413, 580413)
 The nonlinear spin dynamicsaccompanying additional spin waves are studied as functions of the R<missing VAR>F and D<missing VAR>Ccurrents, the external magnetic field, and the applied field direction.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Non-equilibrium Green's function based single-band tight-binding model for Fe-MgO-Fe magnetic tunnel junction devices|Tehseen Raza,Hassan Raza###
(580470, 580470)
Non-equilibrium Greens<missing VAR> function based single-band tight-binding model for Fe-MgO-Fe magnetic tunnel junction devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Non-equilibrium Green's function based single-band tight-binding model for Fe-MgO-Fe magnetic tunnel junction devices|Tehseen Raza,Hassan Raza###
(580472, 580473)
Non-equilibrium Greens<missing VAR> function based single-band tight-binding model for Fe-MgO-Fe magnetic tunnel junction devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Non-equilibrium Green's function based single-band tight-binding model for Fe-MgO-Fe magnetic tunnel junction devices|Tehseen Raza,Hassan Raza###
(580475, 580475)
Non-equilibrium Greens<missing VAR> function based single-band tight-binding model for Fe-MgO-Fe magnetic tunnel junction devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Non-equilibrium Green's function based single-band tight-binding model for Fe-MgO-Fe magnetic tunnel junction devices|Tehseen Raza,Hassan Raza###
(580511, 580511)
 Motivated by observation of very high tunnel magnetoresistance (TMR) inFe-MgO-Fe magnetic tunnel junction devices, we propose a theoretical model forthese devices based on a single-band tight-binding approximation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Non-equilibrium Green's function based single-band tight-binding model for Fe-MgO-Fe magnetic tunnel junction devices|Tehseen Raza,Hassan Raza###
(580513, 580514)
 Motivated by observation of very high tunnel magnetoresistance (TMR) inFe-MgO-Fe magnetic tunnel junction devices, we propose a theoretical model forthese devices based on a single-band tight-binding approximation.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Non-equilibrium Green's function based single-band tight-binding model for Fe-MgO-Fe magnetic tunnel junction devices|Tehseen Raza,Hassan Raza###
(580516, 580516)
 Motivated by observation of very high tunnel magnetoresistance (TMR) inFe-MgO-Fe magnetic tunnel junction devices, we propose a theoretical model forthese devices based on a single-band tight-binding approximation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Non-equilibrium Green's function based single-band tight-binding model for Fe-MgO-Fe magnetic tunnel junction devices|Tehseen Raza,Hassan Raza###
(580596, 580596)
 In the transport direction, spin dependent Hamiltonian isprescribed for Delta1 and Delta5 bands.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Studies of Effects of Current on Exchange-Bias: A Brief Review|J. Bass,A. Sharma,Z. Wei,M. Tsoi###
(581009, 581009)
 MacDonald and co-workers recently predicted that high current densities couldaffect the magnetic order of antiferromagnetic (AFM) multilayers, in wayssimilar to those that occur in ferromagnetic (F) multilayers, and that changesin AFM<missing VAR> magnetic order can produce an antiferromagnetic Giant Magnetoresistance(AGMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(F)
###Studies of Effects of Current on Exchange-Bias: A Brief Review|J. Bass,A. Sharma,Z. Wei,M. Tsoi###
(581035, 581037)
 MacDonald and co-workers recently predicted that high current densities couldaffect the magnetic order of antiferromagnetic (AFM) multilayers, in wayssimilar to those that occur in ferromagnetic (F) multilayers, and that changesin AFM<missing VAR> magnetic order can produce an antiferromagnetic Giant Magnetoresistance(AGMR).
Featurization successful!
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Studies of Effects of Current on Exchange-Bias: A Brief Review|J. Bass,A. Sharma,Z. Wei,M. Tsoi###
(581052, 581052)
 MacDonald and co-workers recently predicted that high current densities couldaffect the magnetic order of antiferromagnetic (AFM) multilayers, in wayssimilar to those that occur in ferromagnetic (F) multilayers, and that changesin AFM<missing VAR> magnetic order can produce an antiferromagnetic Giant Magnetoresistance(AGMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Studies of Effects of Current on Exchange-Bias: A Brief Review|J. Bass,A. Sharma,Z. Wei,M. Tsoi###
(581105, 581105)
 Four groups have now studied current-driven effects on exchange bias atF/AFM<missing VAR> interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Studies of Effects of Current on Exchange-Bias: A Brief Review|J. Bass,A. Sharma,Z. Wei,M. Tsoi###
(581108, 581108)
 Four groups have now studied current-driven effects on exchange bias atF/AFM<missing VAR> interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Studies of Effects of Current on Exchange-Bias: A Brief Review|J. Bass,A. Sharma,Z. Wei,M. Tsoi###
(581114, 581114)
 In this paper, we first briefly review the main predictionsby MacDonald and co-workers, and then the results of experiments on exchangebias that these predictions stimulated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Current-induced domain-wall motion in synthetic antiferromagnets|D. Herranz,R. Guerrero,R. Villar,F. G. Aliev,A. C. Swaving,R. A. Duine,C. van Haesendonck,I. Vavra###
(581247, 581247)
 Domain-wall magnetoresistance and low-frequency noise have been studied inepitaxial antiferromagnetically-coupled [Fe/Cr(001)]10 multilayers andferromagnetic Co line structures as a function of D<missing VAR>C current intensity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Current-induced domain-wall motion in synthetic antiferromagnets|D. Herranz,R. Guerrero,R. Villar,F. G. Aliev,A. C. Swaving,R. A. Duine,C. van Haesendonck,I. Vavra###
(581262, 581262)
 Domain-wall magnetoresistance and low-frequency noise have been studied inepitaxial antiferromagnetically-coupled [Fe/Cr(001)]10 multilayers andferromagnetic Co line structures as a function of D<missing VAR>C current intensity.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Current-induced domain-wall motion in synthetic antiferromagnets|D. Herranz,R. Guerrero,R. Villar,F. G. Aliev,A. C. Swaving,R. A. Duine,C. van Haesendonck,I. Vavra###
(581269, 581269)
 In[Fe/Cr(001)]10 multilayers a transition from excess to suppressed domain-wallinduced 1/f<missing VAR> noise above current densities of jc  2105 A/cm2 has beenobserved.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Current-induced domain-wall motion in synthetic antiferromagnets|D. Herranz,R. Guerrero,R. Villar,F. G. Aliev,A. C. Swaving,R. A. Duine,C. van Haesendonck,I. Vavra###
(581338, 581338)
 In ferromagnetic Co line structures the domain wall related noiseremains qualitatively unchanged up to current densities exceeding 106A/cm2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Current-induced domain-wall motion in synthetic antiferromagnets|D. Herranz,R. Guerrero,R. Villar,F. G. Aliev,A. C. Swaving,R. A. Duine,C. van Haesendonck,I. Vavra###
(581342, 581342)
 In ferromagnetic Co line structures the domain wall related noiseremains qualitatively unchanged up to current densities exceeding 106A/cm2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/Cr
###Current-induced domain-wall motion in synthetic antiferromagnets|D. Herranz,R. Guerrero,R. Villar,F. G. Aliev,A. C. Swaving,R. A. Duine,C. van Haesendonck,I. Vavra###
(581404, 581406)
Theoretical estimates of the critical current density for a synthetic Fe/Crantiferromagnet suggest that this effect may be attributed to current-induceddomain-wall motion that occurs via spin transfer torques.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

MgO
###Current induced resistance change of magnetic tunnel junctions with ultra-thin MgO tunnel barriers|Patryk Krzysteczko,Xinli Kou,Karsten Rott,Andy Thomas,Günter Reiss###
(581481, 581482)
Current induced resistance change of magnetic tunnel junctions with ultra-thin MgO tunnel barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 4.4, 'ohm', 2]

MgO
###Current induced resistance change of magnetic tunnel junctions with ultra-thin MgO tunnel barriers|Patryk Krzysteczko,Xinli Kou,Karsten Rott,Andy Thomas,Günter Reiss###
(581505, 581506)
 Ultra-thin magnetic tunnel junctions with low resistive MgO tunnel barriersare prepared to examine their stability under large current stress.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 4.4, 'ohm', 1]

CPP
###High-output CPP-GMR sensor with synthetic-ferrimagnet free layer and enhanced spin-torque critical currents|M. J. Carey,Neil Smith,S. Maat,J. R. Childress###
(581735, 581737)
High-output CPP-GMR sensor with synthetic-ferrimagnet free layer and enhanced spin-torque critical currents.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[214.0, 4.5, 'nm', 3],[248.0, 2, 'e', 3]

CPP
###High-output CPP-GMR sensor with synthetic-ferrimagnet free layer and enhanced spin-torque critical currents|M. J. Carey,Neil Smith,S. Maat,J. R. Childress###
(581788, 581790)
 It is shown that the maximum stable output of a CPP-GMR sensor is increasedsignificantly by using a synthetic ferrimagnet free layer, provided theelectron current flows from free layer to reference layer.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 4.5, 'nm', 2],[195.0, 2, 'e', 2]

In
###High-output CPP-GMR sensor with synthetic-ferrimagnet free layer and enhanced spin-torque critical currents|M. J. Carey,Neil Smith,S. Maat,J. R. Childress###
(581929, 581929)
 In readheads with net free layer moments equivalent to only 4.5nm of Ni80Fe20, thiseffect is shown to result in sustainable sense current densities above 2e8A/cm2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 4.5, 'nm', 0],[56.0, 2, 'e', 0]

Ni80Fe20
###High-output CPP-GMR sensor with synthetic-ferrimagnet free layer and enhanced spin-torque critical currents|M. J. Carey,Neil Smith,S. Maat,J. R. Childress###
(581955, 581958)
 In readheads with net free layer moments equivalent to only 4.5nm of Ni80Fe20, thiseffect is shown to result in sustainable sense current densities above 2e8A/cm2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 4.5, 'nm', 0],[27.0, 2, 'e', 0]

La0.7Ca0.3MnO3
###Correlation between extrinsic electroresistance and magnetoresistance in fine-grained La0.7Ca0.3MnO3|P. Sujatha Devi,A. Kumar,Dipten Bhattacharya,Shilpi Karmakar,B. K. Chaudhuri###
(582021, 582027)
Correlation between extrinsic electroresistance and magnetoresistance in fine-grained La0.7Ca0.3MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.7Ca0.3MnO3
###Correlation between extrinsic electroresistance and magnetoresistance in fine-grained La0.7Ca0.3MnO3|P. Sujatha Devi,A. Kumar,Dipten Bhattacharya,Shilpi Karmakar,B. K. Chaudhuri###
(582082, 582088)
 We report our observation of a correlation between the extrinsicelectroresistance (EER) and magnetoresistance (EMR) via grain size infine-grained La0.7Ca0.3MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/ZnSe
###Tunneling magnetoresistance of Fe/ZnSe (001) single- and double-barrier junctions as a function of interface structure|J. Peralta-Ramos,A. M. Llois###
(582267, 582270)
Tunneling magnetoresistance of Fe/ZnSe (001) single- and double-barrier junctions as a function of interface structure.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

In
###Tunneling magnetoresistance of Fe/ZnSe (001) single- and double-barrier junctions as a function of interface structure|J. Peralta-Ramos,A. M. Llois###
(582300, 582300)
 In this contribution, we calculate the spin-dependent ballistic and coherenttransport through epitaxial Fe/ZnSe (001) simple and double magnetic tunneljunctions with two different interface terminations Zn-terminated andSe-terminated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/ZnSe
###Tunneling magnetoresistance of Fe/ZnSe (001) single- and double-barrier junctions as a function of interface structure|J. Peralta-Ramos,A. M. Llois###
(582330, 582333)
 In this contribution, we calculate the spin-dependent ballistic and coherenttransport through epitaxial Fe/ZnSe (001) simple and double magnetic tunneljunctions with two different interface terminations Zn-terminated andSe-terminated.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Zn
###Tunneling magnetoresistance of Fe/ZnSe (001) single- and double-barrier junctions as a function of interface structure|J. Peralta-Ramos,A. M. Llois###
(582362, 582362)
 In this contribution, we calculate the spin-dependent ballistic and coherenttransport through epitaxial Fe/ZnSe (001) simple and double magnetic tunneljunctions with two different interface terminations Zn-terminated andSe-terminated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Se
###Tunneling magnetoresistance of Fe/ZnSe (001) single- and double-barrier junctions as a function of interface structure|J. Peralta-Ramos,A. M. Llois###
(582369, 582369)
 In this contribution, we calculate the spin-dependent ballistic and coherenttransport through epitaxial Fe/ZnSe (001) simple and double magnetic tunneljunctions with two different interface terminations Zn-terminated andSe-terminated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.7Ba0.3MnO3
###Polaron formation in the optimally doped ferromagnetic manganites La0.7Ba0.3MnO3 and La0.7Ba0.3MnO3|Y. Chen,B. G. Ueland,J. W. Lynn,G. L. Bychkov,S. N. Barilo,Y. M. Mukovskii###
(582786, 582792)
Polaron formation in the optimally doped ferromagnetic manganites La0.7Ba0.3MnO3 and La0.7Ba0.3MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.7Ba0.3MnO3
###Polaron formation in the optimally doped ferromagnetic manganites La0.7Ba0.3MnO3 and La0.7Ba0.3MnO3|Y. Chen,B. G. Ueland,J. W. Lynn,G. L. Bychkov,S. N. Barilo,Y. M. Mukovskii###
(582796, 582802)
Polaron formation in the optimally doped ferromagnetic manganites La0.7Ba0.3MnO3 and La0.7Ba0.3MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Polaron formation in the optimally doped ferromagnetic manganites La0.7Ba0.3MnO3 and La0.7Ba0.3MnO3|Y. Chen,B. G. Ueland,J. W. Lynn,G. L. Bychkov,S. N. Barilo,Y. M. Mukovskii###
(582829, 582829)
 The nature of the polarons in the optimally doped colossal magnetoresistive(CMR) materials La0.7Ba0.3MnO3 (LBMO) and La0.7Sr0.3MnO3 (LSMO) is studied byelastic and inelastic neutron scattering.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.7Ba0.3MnO3
###Polaron formation in the optimally doped ferromagnetic manganites La0.7Ba0.3MnO3 and La0.7Ba0.3MnO3|Y. Chen,B. G. Ueland,J. W. Lynn,G. L. Bychkov,S. N. Barilo,Y. M. Mukovskii###
(582836, 582842)
 The nature of the polarons in the optimally doped colossal magnetoresistive(CMR) materials La0.7Ba0.3MnO3 (LBMO) and La0.7Sr0.3MnO3 (LSMO) is studied byelastic and inelastic neutron scattering.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Polaron formation in the optimally doped ferromagnetic manganites La0.7Ba0.3MnO3 and La0.7Ba0.3MnO3|Y. Chen,B. G. Ueland,J. W. Lynn,G. L. Bychkov,S. N. Barilo,Y. M. Mukovskii###
(582848, 582848)
 The nature of the polarons in the optimally doped colossal magnetoresistive(CMR) materials La0.7Ba0.3MnO3 (LBMO) and La0.7Sr0.3MnO3 (LSMO) is studied byelastic and inelastic neutron scattering.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.7Sr0.3MnO3
###Polaron formation in the optimally doped ferromagnetic manganites La0.7Ba0.3MnO3 and La0.7Ba0.3MnO3|Y. Chen,B. G. Ueland,J. W. Lynn,G. L. Bychkov,S. N. Barilo,Y. M. Mukovskii###
(582853, 582859)
 The nature of the polarons in the optimally doped colossal magnetoresistive(CMR) materials La0.7Ba0.3MnO3 (LBMO) and La0.7Sr0.3MnO3 (LSMO) is studied byelastic and inelastic neutron scattering.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Polaron formation in the optimally doped ferromagnetic manganites La0.7Ba0.3MnO3 and La0.7Ba0.3MnO3|Y. Chen,B. G. Ueland,J. W. Lynn,G. L. Bychkov,S. N. Barilo,Y. M. Mukovskii###
(582865, 582865)
 The nature of the polarons in the optimally doped colossal magnetoresistive(CMR) materials La0.7Ba0.3MnO3 (LBMO) and La0.7Sr0.3MnO3 (LSMO) is studied byelastic and inelastic neutron scattering.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Polaron formation in the optimally doped ferromagnetic manganites La0.7Ba0.3MnO3 and La0.7Ba0.3MnO3|Y. Chen,B. G. Ueland,J. W. Lynn,G. L. Bychkov,S. N. Barilo,Y. M. Mukovskii###
(582886, 582886)
 In both materials, dynamic nanoscalepolaron correlations develop abruptly in the ferromagnetic state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.7Ca0.3MnO3
###Polaron formation in the optimally doped ferromagnetic manganites La0.7Ba0.3MnO3 and La0.7Ba0.3MnO3|Y. Chen,B. G. Ueland,J. W. Lynn,G. L. Bychkov,S. N. Barilo,Y. M. Mukovskii###
(582959, 582965)
 However, thepolarons are not able to lock-in to the lattice and order, in contrast to thebehavior of La0.7Ca0.3MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Polaron formation in the optimally doped ferromagnetic manganites La0.7Ba0.3MnO3 and La0.7Ba0.3MnO3|Y. Chen,B. G. Ueland,J. W. Lynn,G. L. Bychkov,S. N. Barilo,Y. M. Mukovskii###
(582979, 582979)
 Therefore ferromagnetic order in LBMO and LSMOsurvives their formation, explaining the conventional second order nature ofthe ferromagnetic--paramagnetic transition.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Polaron formation in the optimally doped ferromagnetic manganites La0.7Ba0.3MnO3 and La0.7Ba0.3MnO3|Y. Chen,B. G. Ueland,J. W. Lynn,G. L. Bychkov,S. N. Barilo,Y. M. Mukovskii###
(582986, 582986)
 Therefore ferromagnetic order in LBMO and LSMOsurvives their formation, explaining the conventional second order nature ofthe ferromagnetic--paramagnetic transition.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CeIrIn5
###Analysis of the normal state magnetotransport in CeIrIn${_5}$|Sunil Nair,M. Nicklas,J. L. Sarrao,J. D. Thompson,F. Steglich,S. Wirth###
(583087, 583090)
Analysis of the normal state magnetotransport in CeIrIn5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7142857142857143,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CeIrIn5
###Analysis of the normal state magnetotransport in CeIrIn${_5}$|Sunil Nair,M. Nicklas,J. L. Sarrao,J. D. Thompson,F. Steglich,S. Wirth###
(583122, 583125)
 We present an analysis of the normal state magnetotransport in the heavyfermion superconductor CeIrIn5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7142857142857143,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Analysis of the normal state magnetotransport in CeIrIn${_5}$|Sunil Nair,M. Nicklas,J. L. Sarrao,J. D. Thompson,F. Steglich,S. Wirth###
(583200, 583200)
 The Hall effect and the transversemagnetoresistance in this material do not appear to be uniquely correlated, asinferred from the field dependence of the current ratio (R<missing VAR>sigma sigmaxy / sigmaxx2 H).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Analysis of the normal state magnetotransport in CeIrIn${_5}$|Sunil Nair,M. Nicklas,J. L. Sarrao,J. D. Thompson,F. Steglich,S. Wirth###
(583232, 583232)
 The Hall coefficient is seen to satisfy ascaling equation of the form R<missing VAR>H  f<missing VAR> [H / (a  b Tc)].
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Analysis of the normal state magnetotransport in CeIrIn${_5}$|Sunil Nair,M. Nicklas,J. L. Sarrao,J. D. Thompson,F. Steglich,S. Wirth###
(583238, 583238)
 The Hall coefficient is seen to satisfy ascaling equation of the form R<missing VAR>H  f<missing VAR> [H / (a  b Tc)].
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CeCoIn5
###Analysis of the normal state magnetotransport in CeIrIn${_5}$|Sunil Nair,M. Nicklas,J. L. Sarrao,J. D. Thompson,F. Steglich,S. Wirth###
(583273, 583276)
 These results arecompared to those observed earlier in CeCoIn5, and are discussed in terms ofthe contrasting phase diagram which the CeIrIn5 system exhibits in relationto its Co counterpart.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7142857142857143,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CeIrIn5
###Analysis of the normal state magnetotransport in CeIrIn${_5}$|Sunil Nair,M. Nicklas,J. L. Sarrao,J. D. Thompson,F. Steglich,S. Wirth###
(583304, 583307)
 These results arecompared to those observed earlier in CeCoIn5, and are discussed in terms ofthe contrasting phase diagram which the CeIrIn5 system exhibits in relationto its Co counterpart.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7142857142857143,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Analysis of the normal state magnetotransport in CeIrIn${_5}$|Sunil Nair,M. Nicklas,J. L. Sarrao,J. D. Thompson,F. Steglich,S. Wirth###
(583322, 583322)
 These results arecompared to those observed earlier in CeCoIn5, and are discussed in terms ofthe contrasting phase diagram which the CeIrIn5 system exhibits in relationto its Co counterpart.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn12
###Interactions Between Mn_12-ac and Thin Gold Films: Using Mn_12-ac as Scattering Centers|Joel Means,Winfried Teizer###
(583339, 583340)
Interactions Between Mn12-ac and Thin Gold Films Using Mn12-ac as Scattering Centers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn12
###Interactions Between Mn_12-ac and Thin Gold Films: Using Mn_12-ac as Scattering Centers|Joel Means,Winfried Teizer###
(583354, 583355)
Interactions Between Mn12-ac and Thin Gold Films Using Mn12-ac as Scattering Centers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn12
###Interactions Between Mn_12-ac and Thin Gold Films: Using Mn_12-ac as Scattering Centers|Joel Means,Winfried Teizer###
(583403, 583404)
 We explore the electronic interactions between a thin gold film and a surfacelayer of the molecular magnet Mn12-acetate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn12
###Interactions Between Mn_12-ac and Thin Gold Films: Using Mn_12-ac as Scattering Centers|Joel Means,Winfried Teizer###
(583463, 583464)
 We find that the presence ofMn12-acetate on the surface of the gold film leads to a reduction in elasticscattering while increasing the spin scattering of the conduction electrons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(H)
###Itinerant Ferromagnetism in the electronic localization limit|N. Kurzweil,E. Kogan,A. Frydman###
(583591, 583593)
 We present Hall effect, R<missing VAR>xy(H), and magnetoresistance, R<missing VAR>xx(H),measurements of ultrathin films of Ni, Co and Fe with thicknesses varyingbetween 0.2-8 nm and resistances between 1 MOmega - 100 Omega.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 1, 'M', 0]

(H)
###Itinerant Ferromagnetism in the electronic localization limit|N. Kurzweil,E. Kogan,A. Frydman###
(583603, 583605)
 We present Hall effect, R<missing VAR>xy(H), and magnetoresistance, R<missing VAR>xx(H),measurements of ultrathin films of Ni, Co and Fe with thicknesses varyingbetween 0.2-8 nm and resistances between 1 MOmega - 100 Omega.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 1, 'M', 0]

Ni
###Itinerant Ferromagnetism in the electronic localization limit|N. Kurzweil,E. Kogan,A. Frydman###
(583619, 583619)
 We present Hall effect, R<missing VAR>xy(H), and magnetoresistance, R<missing VAR>xx(H),measurements of ultrathin films of Ni, Co and Fe with thicknesses varyingbetween 0.2-8 nm and resistances between 1 MOmega - 100 Omega.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 1, 'M', 0]

Co
###Itinerant Ferromagnetism in the electronic localization limit|N. Kurzweil,E. Kogan,A. Frydman###
(583622, 583622)
 We present Hall effect, R<missing VAR>xy(H), and magnetoresistance, R<missing VAR>xx(H),measurements of ultrathin films of Ni, Co and Fe with thicknesses varyingbetween 0.2-8 nm and resistances between 1 MOmega - 100 Omega.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 1, 'M', 0]

Fe
###Itinerant Ferromagnetism in the electronic localization limit|N. Kurzweil,E. Kogan,A. Frydman###
(583626, 583626)
 We present Hall effect, R<missing VAR>xy(H), and magnetoresistance, R<missing VAR>xx(H),measurements of ultrathin films of Ni, Co and Fe with thicknesses varyingbetween 0.2-8 nm and resistances between 1 MOmega - 100 Omega.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 1, 'M', 0]

C
###Itinerant Ferromagnetism in the electronic localization limit|N. Kurzweil,E. Kogan,A. Frydman###
(583683, 583683)
 Bothmeasurements show that films having resistance above a critical value, R<missing VAR>C,(thickness below a critical value, d<missing VAR>C) show no signs for ferromagnetism.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 1, 'M', 1]

C
###Itinerant Ferromagnetism in the electronic localization limit|N. Kurzweil,E. Kogan,A. Frydman###
(583700, 583700)
 Bothmeasurements show that films having resistance above a critical value, R<missing VAR>C,(thickness below a critical value, d<missing VAR>C) show no signs for ferromagnetism.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 1, 'M', 1]

C
###Itinerant Ferromagnetism in the electronic localization limit|N. Kurzweil,E. Kogan,A. Frydman###
(583730, 583730)
Ferromagnetism appears only for films with R<RC, where R<missing VAR>C is materialdependent.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 1, 'M', 2]

C
###Itinerant Ferromagnetism in the electronic localization limit|N. Kurzweil,E. Kogan,A. Frydman###
(583736, 583736)
Ferromagnetism appears only for films with R<RC, where R<missing VAR>C is materialdependent.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 1, 'M', 2]

[Bi1.7Ca2O4]0.59CoO2
###Dual electronic states in thermoelectric cobalt oxide|Patrice Limelette,Sylvie Hebert,Herve Muguerra,Raymond Fresard,Charles Simon###
(583859, 583870)
 We investigate the low temperature magnetic field dependence of theresistivity in the thermoelectric misfit cobalt oxide [Bi1.7Ca2O4]0.59CoO2 from60 K down to 3 K.
EXCEPTION 1: Square brackets detected! Chemical formula was modified to: (Bi1.7Ca2O4)0.59CoO2
0,0,0,0,0,0,0,0.578019355694021,0,0,0,0,0,0,0,0,0,0,0,0.15643643112819833,0,0,0,0,0,0,0.13257324671881215,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13297096645896858,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 3, 'K', 0]

K
###Dual electronic states in thermoelectric cobalt oxide|Patrice Limelette,Sylvie Hebert,Herve Muguerra,Raymond Fresard,Charles Simon###
(583877, 583877)
 We investigate the low temperature magnetic field dependence of theresistivity in the thermoelectric misfit cobalt oxide [Bi1.7Ca2O4]0.59CoO2 from60 K down to 3 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 3, 'K', 0]

Ca3Co4O9
###Magnetoresistance scaling in the layered cobaltate Ca3Co4O9|P. Limelette,J. C. Soret,H. Muguerra,D. Grebille###
(584052, 584057)
Magnetoresistance scaling in the layered cobaltate Ca3Co4O9.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5625,0,0,0,0,0,0,0,0,0,0,0,0.1875,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 60, 'K', 1],[56.0, 2, 'K', 1]

Ca3Co4O9
###Magnetoresistance scaling in the layered cobaltate Ca3Co4O9|P. Limelette,J. C. Soret,H. Muguerra,D. Grebille###
(584099, 584104)
 We investigate the low temperature magnetic field dependences of both theresistivity and the magnetization in the misfit cobaltate Ca3Co4O9 from 60 Kdown to 2 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5625,0,0,0,0,0,0,0,0,0,0,0,0.1875,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 60, 'K', 0],[9.0, 2, 'K', 0]

EuFe2(As0.7P0.3)2
###Superconductivity induced by phosphorus doping and its coexistence with ferromagnetism in EuFe$_{2}$(As$_{0.7}$P$_{0.3}$)$_{2}$|Zhi Ren,Qian Tao,Shuai Jiang,Chunmu Feng,Cao Wang,Jianhui Dai,Guanghan Cao,Zhu'an Xu###
(584273, 584282)
Superconductivity induced by phosphorus doping and its coexistence with ferromagnetism in EuFe2(As0.7P0.3)2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.12,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0.27999999999999997,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 26, 'K', 3],[150.0, 20, 'K', 3]

EuFe2(As0.7P0.3)2
###Superconductivity induced by phosphorus doping and its coexistence with ferromagnetism in EuFe$_{2}$(As$_{0.7}$P$_{0.3}$)$_{2}$|Zhi Ren,Qian Tao,Shuai Jiang,Chunmu Feng,Cao Wang,Jianhui Dai,Guanghan Cao,Zhu'an Xu###
(584291, 584300)
 We have studied EuFe2(As0.7P0.3)2 by the measurements ofx<missing VAR>-ray diffraction, electrical resistivity, thermopower, magneticsusceptibility, magnetoresistance and specific heat.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.12,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0.27999999999999997,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 26, 'K', 2],[132.0, 20, 'K', 2]

As
###Superconductivity induced by phosphorus doping and its coexistence with ferromagnetism in EuFe$_{2}$(As$_{0.7}$P$_{0.3}$)$_{2}$|Zhi Ren,Qian Tao,Shuai Jiang,Chunmu Feng,Cao Wang,Jianhui Dai,Guanghan Cao,Zhu'an Xu###
(584347, 584347)
 Partial substitution of Aswith P results in the shrinkage of lattice, which generates chemical pressureto the system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 26, 'K', 1],[85.0, 20, 'K', 1]

P
###Superconductivity induced by phosphorus doping and its coexistence with ferromagnetism in EuFe$_{2}$(As$_{0.7}$P$_{0.3}$)$_{2}$|Zhi Ren,Qian Tao,Shuai Jiang,Chunmu Feng,Cao Wang,Jianhui Dai,Guanghan Cao,Zhu'an Xu###
(584352, 584352)
 Partial substitution of Aswith P results in the shrinkage of lattice, which generates chemical pressureto the system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 26, 'K', 1],[80.0, 20, 'K', 1]

EuFe2(As0.7P0.3)2
###Superconductivity induced by phosphorus doping and its coexistence with ferromagnetism in EuFe$_{2}$(As$_{0.7}$P$_{0.3}$)$_{2}$|Zhi Ren,Qian Tao,Shuai Jiang,Chunmu Feng,Cao Wang,Jianhui Dai,Guanghan Cao,Zhu'an Xu###
(584391, 584400)
 It is found that EuFe2(As0.7P0.3)2 undergoesa superconducting transition at 26 K, followed by ferromagnetic ordering ofEu2 moments at 20 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.12,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0.27999999999999997,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 26, 'K', 0],[32.0, 20, 'K', 0]

Eu2
###Superconductivity induced by phosphorus doping and its coexistence with ferromagnetism in EuFe$_{2}$(As$_{0.7}$P$_{0.3}$)$_{2}$|Zhi Ren,Qian Tao,Shuai Jiang,Chunmu Feng,Cao Wang,Jianhui Dai,Guanghan Cao,Zhu'an Xu###
(584426, 584427)
 It is found that EuFe2(As0.7P0.3)2 undergoesa superconducting transition at 26 K, followed by ferromagnetic ordering ofEu2 moments at 20 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 26, 'K', 0],[5.0, 20, 'K', 0]

B
###Possible Verification of Tilted Anisotropic Dirac Cone in α-(BEDT-TTF)_2 I_3 Using Interlayer Magnetoresistance|Takao Morinari,Takahiro Himura,Takami Tohyama###
(584524, 584524)
Possible Verification of Tilted Anisotropic Dirac Cone in -(BEDT-TTF)2 I3 Using Interlayer Magnetoresistance.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Possible Verification of Tilted Anisotropic Dirac Cone in α-(BEDT-TTF)_2 I_3 Using Interlayer Magnetoresistance|Takao Morinari,Takahiro Himura,Takami Tohyama###
(584531, 584531)
Possible Verification of Tilted Anisotropic Dirac Cone in -(BEDT-TTF)2 I3 Using Interlayer Magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I3
###Possible Verification of Tilted Anisotropic Dirac Cone in α-(BEDT-TTF)_2 I_3 Using Interlayer Magnetoresistance|Takao Morinari,Takahiro Himura,Takami Tohyama###
(584535, 584536)
Possible Verification of Tilted Anisotropic Dirac Cone in -(BEDT-TTF)2 I3 Using Interlayer Magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Possible Verification of Tilted Anisotropic Dirac Cone in α-(BEDT-TTF)_2 I_3 Using Interlayer Magnetoresistance|Takao Morinari,Takahiro Himura,Takami Tohyama###
(584622, 584622)
 It is proposed that the presence of a tilted and anisotropic Dirac cone canbe verified using the interlayer magnetoresistance in the layered Dirac fermionsystem, which is realized in quasi-two-dimensional organic compoundalpha-(BEDT-TTF)2 I3.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Possible Verification of Tilted Anisotropic Dirac Cone in α-(BEDT-TTF)_2 I_3 Using Interlayer Magnetoresistance|Takao Morinari,Takahiro Himura,Takami Tohyama###
(584629, 584629)
 It is proposed that the presence of a tilted and anisotropic Dirac cone canbe verified using the interlayer magnetoresistance in the layered Dirac fermionsystem, which is realized in quasi-two-dimensional organic compoundalpha-(BEDT-TTF)2 I3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I3
###Possible Verification of Tilted Anisotropic Dirac Cone in α-(BEDT-TTF)_2 I_3 Using Interlayer Magnetoresistance|Takao Morinari,Takahiro Himura,Takami Tohyama###
(584633, 584634)
 It is proposed that the presence of a tilted and anisotropic Dirac cone canbe verified using the interlayer magnetoresistance in the layered Dirac fermionsystem, which is realized in quasi-two-dimensional organic compoundalpha-(BEDT-TTF)2 I3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu0.03TaS2
###Anisotropic, Intermediate Coupling Superconductivity in Cu0.03TaS2|X. D. Zhu,Y. P. Sun,S. H. Zhang,J. L. Wang,L. J. Zou,L. E. Delong,G. Cao,X. B. Zhu,X. Luo,B. S. Wang,G. Li,Z. R. Yang,W. H. Song,J. M. Dai###
(584777, 584781)
Anisotropic, Intermediate Coupling Superconductivity in Cu0.03TaS2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6600660066006601,0,0,0,0,0,0,0,0,0,0,0,0,0.0099009900990099,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.33003300330033003,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 4.03, 'K', 2],[159.0, 0.68, ',', 4],[214.0, 2, 'H', 5]

Cu0.03TaS2
###Anisotropic, Intermediate Coupling Superconductivity in Cu0.03TaS2|X. D. Zhu,Y. P. Sun,S. H. Zhang,J. L. Wang,L. J. Zou,L. E. Delong,G. Cao,X. B. Zhu,X. Luo,B. S. Wang,G. Li,Z. R. Yang,W. H. Song,J. M. Dai###
(584796, 584800)
 The anisotropic superconducting state properties in Cu0.03TaS2 have beeninvestigated by magnetization, magnetoresistance, and specific heatmeasurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6600660066006601,0,0,0,0,0,0,0,0,0,0,0,0,0.0099009900990099,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.33003300330033003,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 4.03, 'K', 1],[140.0, 0.68, ',', 3],[195.0, 2, 'H', 4]

Cu0.03TaS2
###Anisotropic, Intermediate Coupling Superconductivity in Cu0.03TaS2|X. D. Zhu,Y. P. Sun,S. H. Zhang,J. L. Wang,L. J. Zou,L. E. Delong,G. Cao,X. B. Zhu,X. Luo,B. S. Wang,G. Li,Z. R. Yang,W. H. Song,J. M. Dai###
(584835, 584839)
 It clearly shows that Cu0.03TaS2 undergoes a superconductingtransition at T<missing VAR>C  4.03 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6600660066006601,0,0,0,0,0,0,0,0,0,0,0,0,0.0099009900990099,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.33003300330033003,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 4.03, 'K', 0],[101.0, 0.68, ',', 2],[156.0, 2, 'H', 3]

C
###Anisotropic, Intermediate Coupling Superconductivity in Cu0.03TaS2|X. D. Zhu,Y. P. Sun,S. H. Zhang,J. L. Wang,L. J. Zou,L. E. Delong,G. Cao,X. B. Zhu,X. Luo,B. S. Wang,G. Li,Z. R. Yang,W. H. Song,J. M. Dai###
(584853, 584853)
 It clearly shows that Cu0.03TaS2 undergoes a superconductingtransition at T<missing VAR>C  4.03 K.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 4.03, 'K', 0],[87.0, 0.68, ',', 2],[142.0, 2, 'H', 3]

Cu0.03TaS2
###Anisotropic, Intermediate Coupling Superconductivity in Cu0.03TaS2|X. D. Zhu,Y. P. Sun,S. H. Zhang,J. L. Wang,L. J. Zou,L. E. Delong,G. Cao,X. B. Zhu,X. Luo,B. S. Wang,G. Li,Z. R. Yang,W. H. Song,J. M. Dai###
(584871, 584875)
 The obtained superconducting parameters demonstratethat Cu0.03TaS2 is an anisotropic type-II superconductor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6600660066006601,0,0,0,0,0,0,0,0,0,0,0,0,0.0099009900990099,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.33003300330033003,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 4.03, 'K', 1],[65.0, 0.68, ',', 1],[120.0, 2, 'H', 2]

II
###Anisotropic, Intermediate Coupling Superconductivity in Cu0.03TaS2|X. D. Zhu,Y. P. Sun,S. H. Zhang,J. L. Wang,L. J. Zou,L. E. Delong,G. Cao,X. B. Zhu,X. Luo,B. S. Wang,G. Li,Z. R. Yang,W. H. Song,J. M. Dai###
(584885, 584886)
 The obtained superconducting parameters demonstratethat Cu0.03TaS2 is an anisotropic type-II superconductor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 4.03, 'K', 1],[54.0, 0.68, ',', 1],[109.0, 2, 'H', 2]

C
###Anisotropic, Intermediate Coupling Superconductivity in Cu0.03TaS2|X. D. Zhu,Y. P. Sun,S. H. Zhang,J. L. Wang,L. J. Zou,L. E. Delong,G. Cao,X. B. Zhu,X. Luo,B. S. Wang,G. Li,Z. R. Yang,W. H. Song,J. M. Dai###
(584916, 584916)
 Combining specificheat jump  1.6(4), gap ratio 2/kBTC  4.0(9) and the estimated electron-phononcoupling constant  0.68, the superconductivity in Cu0.03TaS2 is explainedwithin the intermediate coupling BCS scenario.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 4.03, 'K', 2],[24.0, 0.68, ',', 0],[79.0, 2, 'H', 1]

Cu0.03TaS2
###Anisotropic, Intermediate Coupling Superconductivity in Cu0.03TaS2|X. D. Zhu,Y. P. Sun,S. H. Zhang,J. L. Wang,L. J. Zou,L. E. Delong,G. Cao,X. B. Zhu,X. Luo,B. S. Wang,G. Li,Z. R. Yang,W. H. Song,J. M. Dai###
(584949, 584953)
 Combining specificheat jump  1.6(4), gap ratio 2/kBTC  4.0(9) and the estimated electron-phononcoupling constant  0.68, the superconductivity in Cu0.03TaS2 is explainedwithin the intermediate coupling BCS scenario.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6600660066006601,0,0,0,0,0,0,0,0,0,0,0,0,0.0099009900990099,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.33003300330033003,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 4.03, 'K', 2],[9.0, 0.68, ',', 0],[42.0, 2, 'H', 1]

BCS
###Anisotropic, Intermediate Coupling Superconductivity in Cu0.03TaS2|X. D. Zhu,Y. P. Sun,S. H. Zhang,J. L. Wang,L. J. Zou,L. E. Delong,G. Cao,X. B. Zhu,X. Luo,B. S. Wang,G. Li,Z. R. Yang,W. H. Song,J. M. Dai###
(584968, 584970)
 Combining specificheat jump  1.6(4), gap ratio 2/kBTC  4.0(9) and the estimated electron-phononcoupling constant  0.68, the superconductivity in Cu0.03TaS2 is explainedwithin the intermediate coupling BCS scenario.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 4.03, 'K', 2],[28.0, 0.68, ',', 0],[25.0, 2, 'H', 1]

TaS2
###Anisotropic, Intermediate Coupling Superconductivity in Cu0.03TaS2|X. D. Zhu,Y. P. Sun,S. H. Zhang,J. L. Wang,L. J. Zou,L. E. Delong,G. Cao,X. B. Zhu,X. Luo,B. S. Wang,G. Li,Z. R. Yang,W. H. Song,J. M. Dai###
(584997, 584999)
 First-principles electronicstructure calculations suggest that copper intercalation of 2H-TaS2 causes aconsiderable increase of the Fermi surface volume and the carrier density,which suppresses the CD<missing VAR>W fluctuation and favors the raise of T<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 4.03, 'K', 3],[57.0, 0.68, ',', 1],[2.0, 2, 'H', 0]

C
###Anisotropic, Intermediate Coupling Superconductivity in Cu0.03TaS2|X. D. Zhu,Y. P. Sun,S. H. Zhang,J. L. Wang,L. J. Zou,L. E. Delong,G. Cao,X. B. Zhu,X. Luo,B. S. Wang,G. Li,Z. R. Yang,W. H. Song,J. M. Dai###
(585036, 585036)
 First-principles electronicstructure calculations suggest that copper intercalation of 2H-TaS2 causes aconsiderable increase of the Fermi surface volume and the carrier density,which suppresses the CD<missing VAR>W fluctuation and favors the raise of T<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 4.03, 'K', 3],[96.0, 0.68, ',', 1],[41.0, 2, 'H', 0]

W
###Anisotropic, Intermediate Coupling Superconductivity in Cu0.03TaS2|X. D. Zhu,Y. P. Sun,S. H. Zhang,J. L. Wang,L. J. Zou,L. E. Delong,G. Cao,X. B. Zhu,X. Luo,B. S. Wang,G. Li,Z. R. Yang,W. H. Song,J. M. Dai###
(585038, 585038)
 First-principles electronicstructure calculations suggest that copper intercalation of 2H-TaS2 causes aconsiderable increase of the Fermi surface volume and the carrier density,which suppresses the CD<missing VAR>W fluctuation and favors the raise of T<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[183.0, 4.03, 'K', 3],[98.0, 0.68, ',', 1],[43.0, 2, 'H', 0]

C
###Anisotropic, Intermediate Coupling Superconductivity in Cu0.03TaS2|X. D. Zhu,Y. P. Sun,S. H. Zhang,J. L. Wang,L. J. Zou,L. E. Delong,G. Cao,X. B. Zhu,X. Luo,B. S. Wang,G. Li,Z. R. Yang,W. H. Song,J. M. Dai###
(585053, 585053)
 First-principles electronicstructure calculations suggest that copper intercalation of 2H-TaS2 causes aconsiderable increase of the Fermi surface volume and the carrier density,which suppresses the CD<missing VAR>W fluctuation and favors the raise of T<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[198.0, 4.03, 'K', 3],[113.0, 0.68, ',', 1],[58.0, 2, 'H', 0]

In
###Spin transport properties of a quantum dot coupled to ferromagnetic leads with noncollinear magnetizations|Hao Zhang,Guang-Ming Zhang,Lu Yu###
(585244, 585244)
 In the latter case, the competition of spin precession andthe spin-valve effect could lead to an anomaly in the angle dependence of thespin current.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 0, '<', 2]

B
###Magnetic Field Induced Coherence-Incoherence Crossover in the Interlayer Conductivity of a Layered Organic Metal|M. V. Kartsovnik,P. D. Grigoriev,W. Biberacher,N. D. Kushch###
(585365, 585365)
 The angle-dependent interlayer magnetoresistance of the layered organic metalalpha-(BEDT-TTF)2KHg(SCN)4 is found to undergo a dramatic change fromthe classical conventional behavior at low magnetic fields to an anomalous oneat high fields.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Magnetic Field Induced Coherence-Incoherence Crossover in the Interlayer Conductivity of a Layered Organic Metal|M. V. Kartsovnik,P. D. Grigoriev,W. Biberacher,N. D. Kushch###
(585372, 585372)
 The angle-dependent interlayer magnetoresistance of the layered organic metalalpha-(BEDT-TTF)2KHg(SCN)4 is found to undergo a dramatic change fromthe classical conventional behavior at low magnetic fields to an anomalous oneat high fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

KHg(SCN)4
###Magnetic Field Induced Coherence-Incoherence Crossover in the Interlayer Conductivity of a Layered Organic Metal|M. V. Kartsovnik,P. D. Grigoriev,W. Biberacher,N. D. Kushch###
(585375, 585382)
 The angle-dependent interlayer magnetoresistance of the layered organic metalalpha-(BEDT-TTF)2KHg(SCN)4 is found to undergo a dramatic change fromthe classical conventional behavior at low magnetic fields to an anomalous oneat high fields.
Featurization terminated normally.
0,0,0,0,0,0.2857142857142857,0.2857142857142857,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0.07142857142857142,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07142857142857142,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Anisotropic magnetoresistance in ferromagnetic atomic-sized metal contacts|M. Häfner,J. K. Viljas,J. C. Cuevas###
(585663, 585663)
 In this work we present a theoretical analysisof the AMR in atomic contacts of the 3d ferromagnetic materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 3, 'd', 0]

GaAs/Al
###Fermi Liquid Model of Radiation Induced Magnetoresistance Oscillations in GaAs/Al$_x$Ga$_{1-x}$As Heterostructure Two-Dimensional Electron System: Theoretical Evidence of an Electron Reservoir|Tadashi Toyoda###
(586088, 586091)
Fermi Liquid Model of Radiation Induced Magnetoresistance Oscillations in GaAs/Alx<missing VAR>Ga1-xAs Heterostructure Two-Dimensional Electron System Theoretical Evidence of an Electron Reservoir.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[86.0, 64, ',', 4],[232.0, 95, ',', 10]

Ga1-xAs
###Fermi Liquid Model of Radiation Induced Magnetoresistance Oscillations in GaAs/Al$_x$Ga$_{1-x}$As Heterostructure Two-Dimensional Electron System: Theoretical Evidence of an Electron Reservoir|Tadashi Toyoda###
(586093, 586097)
Fermi Liquid Model of Radiation Induced Magnetoresistance Oscillations in GaAs/Alx<missing VAR>Ga1-xAs Heterostructure Two-Dimensional Electron System Theoretical Evidence of an Electron Reservoir.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[80.0, 64, ',', 4],[226.0, 95, ',', 10]

GaAs/Al
###Fermi Liquid Model of Radiation Induced Magnetoresistance Oscillations in GaAs/Al$_x$Ga$_{1-x}$As Heterostructure Two-Dimensional Electron System: Theoretical Evidence of an Electron Reservoir|Tadashi Toyoda###
(586130, 586133)
 The magnetoresistance oscillations in GaAs/Alx<missing VAR>Ga1-xAsheterostructures induced by millimeterwave radiation recently observed by Zudovet al.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[44.0, 64, ',', 3],[190.0, 95, ',', 9]

Ga1-xAs
###Fermi Liquid Model of Radiation Induced Magnetoresistance Oscillations in GaAs/Al$_x$Ga$_{1-x}$As Heterostructure Two-Dimensional Electron System: Theoretical Evidence of an Electron Reservoir|Tadashi Toyoda###
(586135, 586139)
 The magnetoresistance oscillations in GaAs/Alx<missing VAR>Ga1-xAsheterostructures induced by millimeterwave radiation recently observed by Zudovet al.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[38.0, 64, ',', 3],[184.0, 95, ',', 9]

B
###Fermi Liquid Model of Radiation Induced Magnetoresistance Oscillations in GaAs/Al$_x$Ga$_{1-x}$As Heterostructure Two-Dimensional Electron System: Theoretical Evidence of an Electron Reservoir|Tadashi Toyoda###
(586173, 586173)
 B bf 64, 201311 (2001)] is theoretically reproduced byintroducing a model based on the finite temperature Fermi liquid theory of dcconductivity and the electron reservoir hypothesis.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 64, ',', 0],[150.0, 95, ',', 6]

(La0.4Pr0.6)1.2Sr1.8Mn2O7
###Colossal electroresistance and colossal magnetoresistive step in paramagnetic insulating phase of single crystalline bilayered manganite(La$_{0.4}$Pr$_{0.6}$)$_{1.2}$Sr$_{1.8}$Mn$_{2}$O$_{7}$|Y. Yamato,M. Matsukawa,R. Suryanarayanan,S. Nimori,M. Apostu,A. Revcolevschi,K. Koyama,N. Kobayashi###
(586372, 586384)
Colossal electroresistance and colossal magnetoresistive step in paramagnetic insulating phase of single crystalline bilayered manganite(La0.4Pr0.6)1.2Sr1.8Mn2O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.04,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, -95, '%', 2],[121.0, 5, 'T', 3],[130.0, 10, 'K', 3]

P
###Colossal electroresistance and colossal magnetoresistive step in paramagnetic insulating phase of single crystalline bilayered manganite(La$_{0.4}$Pr$_{0.6}$)$_{1.2}$Sr$_{1.8}$Mn$_{2}$O$_{7}$|Y. Yamato,M. Matsukawa,R. Suryanarayanan,S. Nimori,M. Apostu,A. Revcolevschi,K. Koyama,N. Kobayashi###
(586442, 586442)
 We report a significant decrease in the low-temperature resistance induced bythe application of an electric current on the ab-plane in the paramagneticinsulating (PM<missing VAR>I) state of(La0.4Pr0.6)1.2Sr1.8Mn2O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, -95, '%', 1],[63.0, 5, 'T', 2],[72.0, 10, 'K', 2]

I
###Colossal electroresistance and colossal magnetoresistive step in paramagnetic insulating phase of single crystalline bilayered manganite(La$_{0.4}$Pr$_{0.6}$)$_{1.2}$Sr$_{1.8}$Mn$_{2}$O$_{7}$|Y. Yamato,M. Matsukawa,R. Suryanarayanan,S. Nimori,M. Apostu,A. Revcolevschi,K. Koyama,N. Kobayashi###
(586444, 586444)
 We report a significant decrease in the low-temperature resistance induced bythe application of an electric current on the ab-plane in the paramagneticinsulating (PM<missing VAR>I) state of(La0.4Pr0.6)1.2Sr1.8Mn2O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, -95, '%', 1],[61.0, 5, 'T', 2],[70.0, 10, 'K', 2]

(La0.4Pr0.6)1.2Sr1.8Mn2O7
###Colossal electroresistance and colossal magnetoresistive step in paramagnetic insulating phase of single crystalline bilayered manganite(La$_{0.4}$Pr$_{0.6}$)$_{1.2}$Sr$_{1.8}$Mn$_{2}$O$_{7}$|Y. Yamato,M. Matsukawa,R. Suryanarayanan,S. Nimori,M. Apostu,A. Revcolevschi,K. Koyama,N. Kobayashi###
(586452, 586464)
 We report a significant decrease in the low-temperature resistance induced bythe application of an electric current on the ab-plane in the paramagneticinsulating (PM<missing VAR>I) state of(La0.4Pr0.6)1.2Sr1.8Mn2O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.04,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, -95, '%', 1],[41.0, 5, 'T', 2],[50.0, 10, 'K', 2]

P
###Colossal electroresistance and colossal magnetoresistive step in paramagnetic insulating phase of single crystalline bilayered manganite(La$_{0.4}$Pr$_{0.6}$)$_{1.2}$Sr$_{1.8}$Mn$_{2}$O$_{7}$|Y. Yamato,M. Matsukawa,R. Suryanarayanan,S. Nimori,M. Apostu,A. Revcolevschi,K. Koyama,N. Kobayashi###
(586609, 586609)
 These findings have a close relationship with the presence of theshort-range charge-ordered clusters pinned within the PM<missing VAR>I matrix of the crystalstudied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, -95, '%', 3],[104.0, 5, 'T', 2],[95.0, 10, 'K', 2]

I
###Colossal electroresistance and colossal magnetoresistive step in paramagnetic insulating phase of single crystalline bilayered manganite(La$_{0.4}$Pr$_{0.6}$)$_{1.2}$Sr$_{1.8}$Mn$_{2}$O$_{7}$|Y. Yamato,M. Matsukawa,R. Suryanarayanan,S. Nimori,M. Apostu,A. Revcolevschi,K. Koyama,N. Kobayashi###
(586611, 586611)
 These findings have a close relationship with the presence of theshort-range charge-ordered clusters pinned within the PM<missing VAR>I matrix of the crystalstudied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, -95, '%', 3],[106.0, 5, 'T', 2],[97.0, 10, 'K', 2]

N
###Tunnel Magnetoresistance of a Single-Molecule Junction|Alireza Saffarzadeh###
(586664, 586664)
 Based on the non-equilibrium Greens<missing VAR> function (NEGF) technique and theLandauer-Bu<missing VAR>ttiker theory, the possibility of a molecular spin-electronicdevice, which consists of a single C60 molecule attached to twoferromagnetic electrodes with finite cross sections, is investigated.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[190.0, 60, '%', 2]

F
###Tunnel Magnetoresistance of a Single-Molecule Junction|Alireza Saffarzadeh###
(586667, 586667)
 Based on the non-equilibrium Greens<missing VAR> function (NEGF) technique and theLandauer-Bu<missing VAR>ttiker theory, the possibility of a molecular spin-electronicdevice, which consists of a single C60 molecule attached to twoferromagnetic electrodes with finite cross sections, is investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[187.0, 60, '%', 2]

B
###Tunnel Magnetoresistance of a Single-Molecule Junction|Alireza Saffarzadeh###
(586679, 586679)
 Based on the non-equilibrium Greens<missing VAR> function (NEGF) technique and theLandauer-Bu<missing VAR>ttiker theory, the possibility of a molecular spin-electronicdevice, which consists of a single C60 molecule attached to twoferromagnetic electrodes with finite cross sections, is investigated.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 60, '%', 2]

C60
###Tunnel Magnetoresistance of a Single-Molecule Junction|Alireza Saffarzadeh###
(586714, 586715)
 Based on the non-equilibrium Greens<missing VAR> function (NEGF) technique and theLandauer-Bu<missing VAR>ttiker theory, the possibility of a molecular spin-electronicdevice, which consists of a single C60 molecule attached to twoferromagnetic electrodes with finite cross sections, is investigated.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 60, '%', 2]

In
###Possible Kondo effect in the iron arsenides|Jianhui Dai,Guanghan Cao,Hai-Hu Wen,Zhuan Xu###
(587184, 587184)
 In particular, some FeAs-1111 and FeAs-122compounds show the linear-T<missing VAR> dependence of susceptibility above the spin-densitywave (SD<missing VAR>W) transition and the logarithmic upturn of resistivity at lowtemperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeAs
###Possible Kondo effect in the iron arsenides|Jianhui Dai,Guanghan Cao,Hai-Hu Wen,Zhuan Xu###
(587191, 587192)
 In particular, some FeAs-1111 and FeAs-122compounds show the linear-T<missing VAR> dependence of susceptibility above the spin-densitywave (SD<missing VAR>W) transition and the logarithmic upturn of resistivity at lowtemperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeAs
###Possible Kondo effect in the iron arsenides|Jianhui Dai,Guanghan Cao,Hai-Hu Wen,Zhuan Xu###
(587198, 587199)
 In particular, some FeAs-1111 and FeAs-122compounds show the linear-T<missing VAR> dependence of susceptibility above the spin-densitywave (SD<missing VAR>W) transition and the logarithmic upturn of resistivity at lowtemperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Possible Kondo effect in the iron arsenides|Jianhui Dai,Guanghan Cao,Hai-Hu Wen,Zhuan Xu###
(587232, 587232)
 In particular, some FeAs-1111 and FeAs-122compounds show the linear-T<missing VAR> dependence of susceptibility above the spin-densitywave (SD<missing VAR>W) transition and the logarithmic upturn of resistivity at lowtemperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Possible Kondo effect in the iron arsenides|Jianhui Dai,Guanghan Cao,Hai-Hu Wen,Zhuan Xu###
(587234, 587234)
 In particular, some FeAs-1111 and FeAs-122compounds show the linear-T<missing VAR> dependence of susceptibility above the spin-densitywave (SD<missing VAR>W) transition and the logarithmic upturn of resistivity at lowtemperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeAs
###Possible Kondo effect in the iron arsenides|Jianhui Dai,Guanghan Cao,Hai-Hu Wen,Zhuan Xu###
(587304, 587305)
 We suggest that this is due to the spin-flip scattering betweenthe charge carriers and the local moments in the undoped FeAs layer where Kondoeffect coexists with the SD<missing VAR>W.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Possible Kondo effect in the iron arsenides|Jianhui Dai,Guanghan Cao,Hai-Hu Wen,Zhuan Xu###
(587322, 587322)
 We suggest that this is due to the spin-flip scattering betweenthe charge carriers and the local moments in the undoped FeAs layer where Kondoeffect coexists with the SD<missing VAR>W.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Possible Kondo effect in the iron arsenides|Jianhui Dai,Guanghan Cao,Hai-Hu Wen,Zhuan Xu###
(587324, 587324)
 We suggest that this is due to the spin-flip scattering betweenthe charge carriers and the local moments in the undoped FeAs layer where Kondoeffect coexists with the SD<missing VAR>W.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr3Sc2O5Fe2As2
###Possible Kondo effect in the iron arsenides|Jianhui Dai,Guanghan Cao,Hai-Hu Wen,Zhuan Xu###
(587362, 587371)
 This scenario is also accounted for the change ofthe magnetoresistance from positive to negative in the Sr3Sc2O5Fe2As2 compound.
Featurization terminated normally.
0,0,0,0,0,0,0,0.35714285714285715,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0.21428571428571427,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Zn
###Magnetic Field Induced Superconductivity in Out-of-Equilibrium Nanowires|Yu Chen,S. Snyder,A. M. Goldman###
(587421, 587421)
 Four-terminal resistance measurements have been carried out on Zn nanowiresformed using electron-beam lithography.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Non-monotonic magnetoresistance of two-dimensional electron systems in the ballistic regime|A. Yu. Kuntsevich,G. M. Minkov,A. A. Sherstobitov,V. M. Pudalov###
(587723, 587723)
 The MR grows with field andexhibits a maximum at fields B>1/mu, where mu is the electron mobility.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Non-monotonic magnetoresistance of two-dimensional electron systems in the ballistic regime|A. Yu. Kuntsevich,G. M. Minkov,A. A. Sherstobitov,V. M. Pudalov###
(587743, 587743)
 Astemperature increases the magnitude of the maximum grows and its position movesto higher fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Non-monotonic magnetoresistance of two-dimensional electron systems in the ballistic regime|A. Yu. Kuntsevich,G. M. Minkov,A. A. Sherstobitov,V. M. Pudalov###
(587796, 587796)
 This effect is universal it is observed in various Si- andGaAs- based two-dimensional electron systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Non-monotonic magnetoresistance of two-dimensional electron systems in the ballistic regime|A. Yu. Kuntsevich,G. M. Minkov,A. A. Sherstobitov,V. M. Pudalov###
(587802, 587803)
 This effect is universal it is observed in various Si- andGaAs- based two-dimensional electron systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Electron-Hole Asymmetry of Spin Injection and Transport in Single-Layer Graphene|Wei Han,W. H. Wang,K. Pi,K. M. McCreary,W. Bao,Yan Li,F. Miao,C. N. Lau,R. K. Kawakami###
(587913, 587913)
 Spin-dependent properties of single-layer graphene (SLG) have been studied bynon-local spin valve measurements at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Electron-Hole Asymmetry of Spin Injection and Transport in Single-Layer Graphene|Wei Han,W. H. Wang,K. Pi,K. M. McCreary,W. Bao,Yan Li,F. Miao,C. N. Lau,R. K. Kawakami###
(587983, 587983)
 Gate voltage dependenceshows that the non-local magnetoresistance (MR) is proportional to theconductivity of the SLG, which is the predicted behavior for transparentferromagnetic/nonmagnetic contacts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Electron-Hole Asymmetry of Spin Injection and Transport in Single-Layer Graphene|Wei Han,W. H. Wang,K. Pi,K. M. McCreary,W. Bao,Yan Li,F. Miao,C. N. Lau,R. K. Kawakami###
(588024, 588024)
 While the electron and hole bands in SLGare symmetric, gate voltage and bias dependence of the non-local MR reveal anelectron-hole asymmetry in which the non-local MR is roughly independent ofbias for electrons, but varies significantly with bias for holes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ba2Cu3O6
###Competition and coexistence of antiferromagnetism and superconductivity in RBa_2Cu_3O_{6+x} (R = Lu, Y) single crystals|A. N. Lavrov,L. P. Kozeeva,M. R. Trunin,V. N. Zverev###
(588135, 588140)
Competition and coexistence of antiferromagnetism and superconductivity in R<missing VAR>Ba2Cu3O6x<missing VAR> (R<missing VAR>  Lu, Y) single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5454545454545454,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2727272727272727,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 3, 'D', 2]

Lu
###Competition and coexistence of antiferromagnetism and superconductivity in RBa_2Cu_3O_{6+x} (R = Lu, Y) single crystals|A. N. Lavrov,L. P. Kozeeva,M. R. Trunin,V. N. Zverev###
(588147, 588147)
Competition and coexistence of antiferromagnetism and superconductivity in R<missing VAR>Ba2Cu3O6x<missing VAR> (R<missing VAR>  Lu, Y) single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 3, 'D', 2]

Y
###Competition and coexistence of antiferromagnetism and superconductivity in RBa_2Cu_3O_{6+x} (R = Lu, Y) single crystals|A. N. Lavrov,L. P. Kozeeva,M. R. Trunin,V. N. Zverev###
(588150, 588150)
Competition and coexistence of antiferromagnetism and superconductivity in R<missing VAR>Ba2Cu3O6x<missing VAR> (R<missing VAR>  Lu, Y) single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 3, 'D', 2]

F
###Competition and coexistence of antiferromagnetism and superconductivity in RBa_2Cu_3O_{6+x} (R = Lu, Y) single crystals|A. N. Lavrov,L. P. Kozeeva,M. R. Trunin,V. N. Zverev###
(588189, 588189)
 We use c<missing VAR>-axis resistivity and magnetoresistance measurements to study theinterplay between antiferromagnetic (AF) and superconducting (SC) ordering inunderdoped R<missing VAR>Ba2Cu3O6x<missing VAR> (R<missing VAR>  Lu, Y) single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 3, 'D', 1]

(SC)
###Competition and coexistence of antiferromagnetism and superconductivity in RBa_2Cu_3O_{6+x} (R = Lu, Y) single crystals|A. N. Lavrov,L. P. Kozeeva,M. R. Trunin,V. N. Zverev###
(588196, 588199)
 We use c<missing VAR>-axis resistivity and magnetoresistance measurements to study theinterplay between antiferromagnetic (AF) and superconducting (SC) ordering inunderdoped R<missing VAR>Ba2Cu3O6x<missing VAR> (R<missing VAR>  Lu, Y) single crystals.
Featurization successful!
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 3, 'D', 1]

Ba2Cu3O6
###Competition and coexistence of antiferromagnetism and superconductivity in RBa_2Cu_3O_{6+x} (R = Lu, Y) single crystals|A. N. Lavrov,L. P. Kozeeva,M. R. Trunin,V. N. Zverev###
(588209, 588214)
 We use c<missing VAR>-axis resistivity and magnetoresistance measurements to study theinterplay between antiferromagnetic (AF) and superconducting (SC) ordering inunderdoped R<missing VAR>Ba2Cu3O6x<missing VAR> (R<missing VAR>  Lu, Y) single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5454545454545454,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2727272727272727,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 3, 'D', 1]

Lu
###Competition and coexistence of antiferromagnetism and superconductivity in RBa_2Cu_3O_{6+x} (R = Lu, Y) single crystals|A. N. Lavrov,L. P. Kozeeva,M. R. Trunin,V. N. Zverev###
(588221, 588221)
 We use c<missing VAR>-axis resistivity and magnetoresistance measurements to study theinterplay between antiferromagnetic (AF) and superconducting (SC) ordering inunderdoped R<missing VAR>Ba2Cu3O6x<missing VAR> (R<missing VAR>  Lu, Y) single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 3, 'D', 1]

Y
###Competition and coexistence of antiferromagnetism and superconductivity in RBa_2Cu_3O_{6+x} (R = Lu, Y) single crystals|A. N. Lavrov,L. P. Kozeeva,M. R. Trunin,V. N. Zverev###
(588224, 588224)
 We use c<missing VAR>-axis resistivity and magnetoresistance measurements to study theinterplay between antiferromagnetic (AF) and superconducting (SC) ordering inunderdoped R<missing VAR>Ba2Cu3O6x<missing VAR> (R<missing VAR>  Lu, Y) single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 3, 'D', 1]

F
###Competition and coexistence of antiferromagnetism and superconductivity in RBa_2Cu_3O_{6+x} (R = Lu, Y) single crystals|A. N. Lavrov,L. P. Kozeeva,M. R. Trunin,V. N. Zverev###
(588304, 588304)
Despite the competition, the superconductivity sets in before the AF order iscompletely destroyed and coexists with latter in a certain range of holedoping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 3, 'D', 1]

F
###Competition and coexistence of antiferromagnetism and superconductivity in RBa_2Cu_3O_{6+x} (R = Lu, Y) single crystals|A. N. Lavrov,L. P. Kozeeva,M. R. Trunin,V. N. Zverev###
(588358, 588358)
 We find also that strong magnetic fields affect the AF-SC interplay byboth suppressing the superconductivity and stabilizing the Neel order.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 3, 'D', 2]

SC
###Competition and coexistence of antiferromagnetism and superconductivity in RBa_2Cu_3O_{6+x} (R = Lu, Y) single crystals|A. N. Lavrov,L. P. Kozeeva,M. R. Trunin,V. N. Zverev###
(588360, 588361)
 We find also that strong magnetic fields affect the AF-SC interplay byboth suppressing the superconductivity and stabilizing the Neel order.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 3, 'D', 2]

MgO
###Structural stability, magnetic and electronic properties of Co2MnSi(001)/MgO heterostructures: A density functional theory study|B. Hülsen,M. Scheffler,P. Kratzer###
(588648, 588649)
Structural stability, magnetic and electronic properties of Co2MnSi(001)/MgO heterostructures A density functional theory study.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Structural stability, magnetic and electronic properties of Co2MnSi(001)/MgO heterostructures: A density functional theory study|B. Hülsen,M. Scheffler,P. Kratzer###
(588734, 588734)
 Employing abinitio atomistic thermodynamics, we show that the Co- or MnSi-planes ofbulk-terminated Co2MnSi form stable interfaces, while pure Si or pure Mntermination requires non-equilibrium conditions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnSi
###Structural stability, magnetic and electronic properties of Co2MnSi(001)/MgO heterostructures: A density functional theory study|B. Hülsen,M. Scheffler,P. Kratzer###
(588739, 588740)
 Employing abinitio atomistic thermodynamics, we show that the Co- or MnSi-planes ofbulk-terminated Co2MnSi form stable interfaces, while pure Si or pure Mntermination requires non-equilibrium conditions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co2MnSi
###Structural stability, magnetic and electronic properties of Co2MnSi(001)/MgO heterostructures: A density functional theory study|B. Hülsen,M. Scheffler,P. Kratzer###
(588751, 588754)
 Employing abinitio atomistic thermodynamics, we show that the Co- or MnSi-planes ofbulk-terminated Co2MnSi form stable interfaces, while pure Si or pure Mntermination requires non-equilibrium conditions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Structural stability, magnetic and electronic properties of Co2MnSi(001)/MgO heterostructures: A density functional theory study|B. Hülsen,M. Scheffler,P. Kratzer###
(588767, 588767)
 Employing abinitio atomistic thermodynamics, we show that the Co- or MnSi-planes ofbulk-terminated Co2MnSi form stable interfaces, while pure Si or pure Mntermination requires non-equilibrium conditions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Structural stability, magnetic and electronic properties of Co2MnSi(001)/MgO heterostructures: A density functional theory study|B. Hülsen,M. Scheffler,P. Kratzer###
(588773, 588773)
 Employing abinitio atomistic thermodynamics, we show that the Co- or MnSi-planes ofbulk-terminated Co2MnSi form stable interfaces, while pure Si or pure Mntermination requires non-equilibrium conditions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Structural stability, magnetic and electronic properties of Co2MnSi(001)/MgO heterostructures: A density functional theory study|B. Hülsen,M. Scheffler,P. Kratzer###
(588795, 588795)
 Except for the pure Mninterface, the half-metallic property of bulk Co2MnSi is disrupted by interfacebands.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co2MnSi
###Structural stability, magnetic and electronic properties of Co2MnSi(001)/MgO heterostructures: A density functional theory study|B. Hülsen,M. Scheffler,P. Kratzer###
(588813, 588816)
 Except for the pure Mninterface, the half-metallic property of bulk Co2MnSi is disrupted by interfacebands.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Structural stability, magnetic and electronic properties of Co2MnSi(001)/MgO heterostructures: A density functional theory study|B. Hülsen,M. Scheffler,P. Kratzer###
(588839, 588839)
 Even so, at homogeneous Mn or Co interfaces these bands contributelittle to the minority-spin conductance through an MgO barrier, and hence suchterminations could perform strongly in TMR devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Structural stability, magnetic and electronic properties of Co2MnSi(001)/MgO heterostructures: A density functional theory study|B. Hülsen,M. Scheffler,P. Kratzer###
(588843, 588843)
 Even so, at homogeneous Mn or Co interfaces these bands contributelittle to the minority-spin conductance through an MgO barrier, and hence suchterminations could perform strongly in TMR devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Structural stability, magnetic and electronic properties of Co2MnSi(001)/MgO heterostructures: A density functional theory study|B. Hülsen,M. Scheffler,P. Kratzer###
(588870, 588871)
 Even so, at homogeneous Mn or Co interfaces these bands contributelittle to the minority-spin conductance through an MgO barrier, and hence suchterminations could perform strongly in TMR devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Proximity-induced superconductivity in nanowires: Mini-gap state and differential magnetoresistance oscillations|Jian Wang,Chuntai Shi,Mingliang Tian,Qi Zhang,Nitesh Kumar,J. K. Jain,T. E. Mallouk,M. H. W. Chan###
(589011, 589011)
 At intermediate lengths, however, we observe two sharptransitions; the normal and superconducting regions are separated by what wecall the mini-gap phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn2O7
###A high resolution, hard x-ray photoemission investigation of La_(2-2x)Sr_(1+2x)Mn_2O_7 (0.30<x<0.50): on microscopic phase separation and the surface electronic structure of a bilayered CMR manganite|S. de Jong,F. Massee,Y. Huang,M. Gorgoi,F. Schaefers,J. Fink,A. T. Boothroyd,D. Prabhakaran,J. B. Goedkoop,M. S. Golden###
(589221, 589224)
A high resolution, hard x<missing VAR>-ray photoemission investigation of La(2-2x)Sr(12x)Mn2O7 (0.30<x<missing VAR><0.50) on microscopic phase separation and the surface electronic structure of a bilayered CMR manganite.
Featurization terminated normally.
0,0,0,0,0,0,0,0.7777777777777778,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 0.3, '<', 0],[107.0, 0.3, '<', 1]

C
###A high resolution, hard x-ray photoemission investigation of La_(2-2x)Sr_(1+2x)Mn_2O_7 (0.30<x<0.50): on microscopic phase separation and the surface electronic structure of a bilayered CMR manganite|S. de Jong,F. Massee,Y. Huang,M. Gorgoi,F. Schaefers,J. Fink,A. T. Boothroyd,D. Prabhakaran,J. B. Goedkoop,M. S. Golden###
(589258, 589258)
A high resolution, hard x<missing VAR>-ray photoemission investigation of La(2-2x)Sr(12x)Mn2O7 (0.30<x<missing VAR><0.50) on microscopic phase separation and the surface electronic structure of a bilayered CMR manganite.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 0.3, '<', 0],[73.0, 0.3, '<', 1]

Mn2O7
###A high resolution, hard x-ray photoemission investigation of La_(2-2x)Sr_(1+2x)Mn_2O_7 (0.30<x<0.50): on microscopic phase separation and the surface electronic structure of a bilayered CMR manganite|S. de Jong,F. Massee,Y. Huang,M. Gorgoi,F. Schaefers,J. Fink,A. T. Boothroyd,D. Prabhakaran,J. B. Goedkoop,M. S. Golden###
(589316, 589319)
 Photoemission data taken with hard x<missing VAR>-ray radiation on cleaved single crystalsof the bilayered, colossal magnetoresistant manganite La(2-2x)Sr(12x)Mn2O7(LSMO) with 0.30<x<missing VAR><0.50 are presented.
Featurization terminated normally.
0,0,0,0,0,0,0,0.7777777777777778,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 0.3, '<', 1],[12.0, 0.3, '<', 0]

O
###A high resolution, hard x-ray photoemission investigation of La_(2-2x)Sr_(1+2x)Mn_2O_7 (0.30<x<0.50): on microscopic phase separation and the surface electronic structure of a bilayered CMR manganite|S. de Jong,F. Massee,Y. Huang,M. Gorgoi,F. Schaefers,J. Fink,A. T. Boothroyd,D. Prabhakaran,J. B. Goedkoop,M. S. Golden###
(589326, 589326)
 Photoemission data taken with hard x<missing VAR>-ray radiation on cleaved single crystalsof the bilayered, colossal magnetoresistant manganite La(2-2x)Sr(12x)Mn2O7(LSMO) with 0.30<x<missing VAR><0.50 are presented.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 0.3, '<', 1],[5.0, 0.3, '<', 0]

O
###A high resolution, hard x-ray photoemission investigation of La_(2-2x)Sr_(1+2x)Mn_2O_7 (0.30<x<0.50): on microscopic phase separation and the surface electronic structure of a bilayered CMR manganite|S. de Jong,F. Massee,Y. Huang,M. Gorgoi,F. Schaefers,J. Fink,A. T. Boothroyd,D. Prabhakaran,J. B. Goedkoop,M. S. Golden###
(589399, 589399)
 Making use of the increasedbulk-sensitivity upon hard x<missing VAR>-ray excitation it is shown that the core levelfootprint of the electronic structure of the LSMO cleavage surface is identicalto that of the bulk.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[172.0, 0.3, '<', 2],[68.0, 0.3, '<', 1]

YbRh2Si2
###Strongly correlated Fermi-systems: non-Fermi liquid behavior, quasiparticle effective mass and their interplay|V. R. Shaginyan,M. Ya. Amusia,K. G. Popov###
(590008, 590012)
 Our theoretical study of the heat capacity, magnetization, energyscales, the longitudinal magnetoresistance and magnetic entropy are in goodagreement with the remarkable recent facts collected on the heavy-fermion metalYbRh2Si2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/GaAs/Au
###Tunneling anisotropic magnetoresistance in Fe/GaAs/Au junctions: orbital effects|M. Wimmer,M. Lobenhofer,J. Moser,A. Matos-Abiague,D. Schuh,W. Wegscheider,J. Fabian,K. Richter,D. Weiss###
(590255, 590260)
Tunneling anisotropic magnetoresistance in Fe/GaAs/Au junctions orbital effects.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Fe/GaAs/Au
###Tunneling anisotropic magnetoresistance in Fe/GaAs/Au junctions: orbital effects|M. Wimmer,M. Lobenhofer,J. Moser,A. Matos-Abiague,D. Schuh,W. Wegscheider,J. Fabian,K. Richter,D. Weiss###
(590281, 590286)
 We report experiments on epitaxially grown Fe/GaAs/Au tunnel junctionsdemonstrating that the tunneling anisotropic magnetoresistance (TAMR) effectcan be controlled by a magnetic field.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

GaAs
###Tunneling anisotropic magnetoresistance in Fe/GaAs/Au junctions: orbital effects|M. Wimmer,M. Lobenhofer,J. Moser,A. Matos-Abiague,D. Schuh,W. Wegscheider,J. Fabian,K. Richter,D. Weiss###
(590376, 590377)
 Theoretical modelling shows that theinterplay of the orbital effects of a magnetic field and the Dresselhausspin-orbit coupling in the GaAs barrier leads to an independent contribution tothe TAMR effect with uniaxial symmetry, whereas the Bychkov-Rashba spin-orbitcoupling does not play a role.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O(N)
###Green-Function-Based Monte Carlo Method for Classical Fields Coupled to Fermions|Alexander Weiße###
(590656, 590659)
 We present an efficient,truncation-free O(N) method on the basis of Chebyshev expanded local Greenfunctions, which allows us to simulate systems of unprecedented size N.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Green-Function-Based Monte Carlo Method for Classical Fields Coupled to Fermions|Alexander Weiße###
(590701, 590701)
 We present an efficient,truncation-free O(N) method on the basis of Chebyshev expanded local Greenfunctions, which allows us to simulate systems of unprecedented size N.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Li0.9Mo6O17
###Directional field-induced metallization of quasi-one-dimensional Li$_{0.9}$Mo$_6$O$_{17}$|X. Xu,A. F. Bangura,J. G. Analytis,J. D. Fletcher,M. M. J. French,N. Shannon,J. He,S. Zhang,D. Mandrus,R. Jin,N. E. Hussey###
(590728, 590733)
Directional field-induced metallization of quasi-one-dimensional Li0.9Mo6O17.
Featurization terminated normally.
0,0,0.03765690376569038,0,0,0,0,0.7112970711297072,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2510460251046025,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 25, 'K', 1]

Li0.9Mo6O17
###Directional field-induced metallization of quasi-one-dimensional Li$_{0.9}$Mo$_6$O$_{17}$|X. Xu,A. F. Bangura,J. G. Analytis,J. D. Fletcher,M. M. J. French,N. Shannon,J. He,S. Zhang,D. Mandrus,R. Jin,N. E. Hussey###
(590765, 590770)
 We report a detailed magnetotransport study of the highly anisotropicquasi-one-dimensional oxide Li0.9Mo6O17 whose in-chain electricalresistivity diverges below a temperature T<missing VAR>rm min sim 25 K.
Featurization terminated normally.
0,0,0.03765690376569038,0,0,0,0,0.7112970711297072,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2510460251046025,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 25, 'K', 0]

At
###Directional field-induced metallization of quasi-one-dimensional Li$_{0.9}$Mo$_6$O$_{17}$|X. Xu,A. F. Bangura,J. G. Analytis,J. D. Fletcher,M. M. J. French,N. Shannon,J. He,S. Zhang,D. Mandrus,R. Jin,N. E. Hussey###
(590916, 590916)
 At the highest fields studied, there is evidence for the possibleemergence of a novel superconducting state with an onset temperature Tc > 10K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 25, 'K', 3]

K
###Directional field-induced metallization of quasi-one-dimensional Li$_{0.9}$Mo$_6$O$_{17}$|X. Xu,A. F. Bangura,J. G. Analytis,J. D. Fletcher,M. M. J. French,N. Shannon,J. He,S. Zhang,D. Mandrus,R. Jin,N. E. Hussey###
(590968, 590968)
 At the highest fields studied, there is evidence for the possibleemergence of a novel superconducting state with an onset temperature Tc > 10K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[171.0, 25, 'K', 3]

MgO
###Electrical Spin Injection into Silicon using MgO Tunnel Barrier|Tomoyuki Sasaki,Tohru Oikawa,Toshio Suzuki,Masashi Shiraishi,Yoshishige Suzuki,Katsumichi Tagami###
(590991, 590992)
Electrical Spin Injection into Silicon using MgO Tunnel Barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 120, 'K', 3],[167.0, 2.25, 'um', 3],[170.0, 8, 'K', 3]

Fe/MgO
###Electrical Spin Injection into Silicon using MgO Tunnel Barrier|Tomoyuki Sasaki,Tohru Oikawa,Toshio Suzuki,Masashi Shiraishi,Yoshishige Suzuki,Katsumichi Tagami###
(591013, 591016)
 We observed spin injection into silicon through Fe/MgO tunnel barrier byusing non-local magnetoresistance measurement technique.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[90.0, 120, 'K', 2],[143.0, 2.25, 'um', 2],[146.0, 8, 'K', 2]

Fe/MgO
###Electrical Spin Injection into Silicon using MgO Tunnel Barrier|Tomoyuki Sasaki,Tohru Oikawa,Toshio Suzuki,Masashi Shiraishi,Yoshishige Suzuki,Katsumichi Tagami###
(591038, 591041)
 Fe/MgO tunnel barriercontacts with a lateral spin valve structure were fabricated on phosphorousdoped silicon-on-insulator substrate.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[65.0, 120, 'K', 1],[118.0, 2.25, 'um', 1],[121.0, 8, 'K', 1]

Si
###Electrical Spin Injection into Silicon using MgO Tunnel Barrier|Tomoyuki Sasaki,Tohru Oikawa,Toshio Suzuki,Masashi Shiraishi,Yoshishige Suzuki,Katsumichi Tagami###
(591130, 591130)
 Spin injection signals in the non-localscheme were observed up to 120K, which is the highest value where bandtransferred spins in Si have ever been reported, and spin diffusion length wasestimated to be about 2.25um at 8K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 120, 'K', 0],[29.0, 2.25, 'um', 0],[32.0, 8, 'K', 0]

MgO
###Electrical Spin Injection into Silicon using MgO Tunnel Barrier|Tomoyuki Sasaki,Tohru Oikawa,Toshio Suzuki,Masashi Shiraishi,Yoshishige Suzuki,Katsumichi Tagami###
(591204, 591205)
 It isclarified that MgO tunnel barrier is effective for the spin injection intosilicon.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 120, 'K', 2],[45.0, 2.25, 'um', 2],[42.0, 8, 'K', 2]

O
###Hysteretic magnetoresistance in polymeric diodes|Sayani Majumdar,Himadri S. Majumdar,Harri Aarnio,Ronald Osterbacka###
(591261, 591261)
 We report on hysteretic organic magnetoresistance (OMAR) in polymeric diodes.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Hysteretic magnetoresistance in polymeric diodes|Sayani Majumdar,Himadri S. Majumdar,Harri Aarnio,Ronald Osterbacka###
(591289, 591289)
We found that magnitude and lineshape of OMAR depends strongly on the scanspeed of the magnetic field and on the time delay between two successivemeasurements.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Hysteretic magnetoresistance in polymeric diodes|Sayani Majumdar,Himadri S. Majumdar,Harri Aarnio,Ronald Osterbacka###
(591341, 591341)
 The time-dependent OMAR phenomenon is universal for diodes madewith various polymers.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Hysteretic magnetoresistance in polymeric diodes|Sayani Majumdar,Himadri S. Majumdar,Harri Aarnio,Ronald Osterbacka###
(591379, 591379)
 However, the width and magnitude of OMAR varied with thepolymeric material.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Hysteretic magnetoresistance in polymeric diodes|Sayani Majumdar,Himadri S. Majumdar,Harri Aarnio,Ronald Osterbacka###
(591481, 591481)
These experimental observations are significant for clarification of the OMARphenomenon.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###Fermi Surface Evolution in an Electron-Doped High-Tc Superconductor Revealed by Magnetic Quantum Oscillations|T. Helm,M. V. Kartsovnik,M. Bartkowiak,N. Bittner,M. Lambacher,A. Erb,J. Wosnitza,R. Gross###
(591997, 591997)
Fermi Surface Evolution in an Electron-Doped High-Tc Superconductor Revealed by Magnetic Quantum Oscillations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nd2-xCe
###Fermi Surface Evolution in an Electron-Doped High-Tc Superconductor Revealed by Magnetic Quantum Oscillations|T. Helm,M. V. Kartsovnik,M. Bartkowiak,N. Bittner,M. Lambacher,A. Erb,J. Wosnitza,R. Gross###
(592049, 592053)
 We report on the direct probing of the Fermi surface in the bulk of theelectron-doped superconductor Nd2-xCex<missing VAR>CuO4 at different dopinglevels by means of magnetoresistance quantum oscillations.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

CuO4
###Fermi Surface Evolution in an Electron-Doped High-Tc Superconductor Revealed by Magnetic Quantum Oscillations|T. Helm,M. V. Kartsovnik,M. Bartkowiak,N. Bittner,M. Lambacher,A. Erb,J. Wosnitza,R. Gross###
(592055, 592057)
 We report on the direct probing of the Fermi surface in the bulk of theelectron-doped superconductor Nd2-xCex<missing VAR>CuO4 at different dopinglevels by means of magnetoresistance quantum oscillations.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Yb(Rh0.97Co0.03)2Si2
###Quantum criticality in Yb(Rh0.97Co0.03)2Si2 probed by low-temperature resistivity|Sven Friedemann,Niels Oeschler,Cornelius Krellner,Christoph Geibel,Frank Steglich###
(592460, 592469)
Quantum criticality in Yb(Rh0.97Co0.03)2Si2 probed by low-temperature resistivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0.012,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.388,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Yb(Rh0.97Co0.03)2Si2
###Quantum criticality in Yb(Rh0.97Co0.03)2Si2 probed by low-temperature resistivity|Sven Friedemann,Niels Oeschler,Cornelius Krellner,Christoph Geibel,Frank Steglich###
(592488, 592497)
 Quantum criticality in Yb(Rh0.97Co0.03)2Si2 is investigated by means ofresistivity and magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0.012,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.388,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Quantum criticality in Yb(Rh0.97Co0.03)2Si2 probed by low-temperature resistivity|Sven Friedemann,Niels Oeschler,Cornelius Krellner,Christoph Geibel,Frank Steglich###
(592525, 592525)
 The partial substitution of Co leads to astabilization of the magnetism as expected according to the application ofchemical pressure for Yb systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Yb
###Quantum criticality in Yb(Rh0.97Co0.03)2Si2 probed by low-temperature resistivity|Sven Friedemann,Niels Oeschler,Cornelius Krellner,Christoph Geibel,Frank Steglich###
(592563, 592563)
 The partial substitution of Co leads to astabilization of the magnetism as expected according to the application ofchemical pressure for Yb systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YbRh2Si2
###Quantum criticality in Yb(Rh0.97Co0.03)2Si2 probed by low-temperature resistivity|Sven Friedemann,Niels Oeschler,Cornelius Krellner,Christoph Geibel,Frank Steglich###
(592615, 592619)
 However, the signature of the Kondo-breakdownremains at the same position in the temperature-magnetic field phase diagramcompared to stoichiometric YbRh2Si2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Quantum criticality in Yb(Rh0.97Co0.03)2Si2 probed by low-temperature resistivity|Sven Friedemann,Niels Oeschler,Cornelius Krellner,Christoph Geibel,Frank Steglich###
(592622, 592622)
 As a consequence, the Kondo-breakdown issituated within the antiferromagnetic phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbN
###Robust coupling of superconducting order parameter in a mesoscale NbN-Fe-NbN epitaxial structure|S. K. Bose,R. C. Budhani###
(592705, 592706)
Robust coupling of superconducting order parameter in a mesoscale NbN-Fe-NbN epitaxial structure.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Robust coupling of superconducting order parameter in a mesoscale NbN-Fe-NbN epitaxial structure|S. K. Bose,R. C. Budhani###
(592708, 592708)
Robust coupling of superconducting order parameter in a mesoscale NbN-Fe-NbN epitaxial structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbN
###Robust coupling of superconducting order parameter in a mesoscale NbN-Fe-NbN epitaxial structure|S. K. Bose,R. C. Budhani###
(592710, 592711)
Robust coupling of superconducting order parameter in a mesoscale NbN-Fe-NbN epitaxial structure.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Robust coupling of superconducting order parameter in a mesoscale NbN-Fe-NbN epitaxial structure|S. K. Bose,R. C. Budhani###
(592748, 592748)
 We report an unconventional and promising route to self-assemble distributedsuperconductor-ferromagnet-superconductor (S-F-S) Josephson Junctions on singlecrystal [100] MgO.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Robust coupling of superconducting order parameter in a mesoscale NbN-Fe-NbN epitaxial structure|S. K. Bose,R. C. Budhani###
(592750, 592750)
 We report an unconventional and promising route to self-assemble distributedsuperconductor-ferromagnet-superconductor (S-F-S) Josephson Junctions on singlecrystal [100] MgO.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Robust coupling of superconducting order parameter in a mesoscale NbN-Fe-NbN epitaxial structure|S. K. Bose,R. C. Budhani###
(592752, 592752)
 We report an unconventional and promising route to self-assemble distributedsuperconductor-ferromagnet-superconductor (S-F-S) Josephson Junctions on singlecrystal [100] MgO.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Robust coupling of superconducting order parameter in a mesoscale NbN-Fe-NbN epitaxial structure|S. K. Bose,R. C. Budhani###
(592770, 592771)
 We report an unconventional and promising route to self-assemble distributedsuperconductor-ferromagnet-superconductor (S-F-S) Josephson Junctions on singlecrystal [100] MgO.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Robust coupling of superconducting order parameter in a mesoscale NbN-Fe-NbN epitaxial structure|S. K. Bose,R. C. Budhani###
(592795, 592795)
 These structures consist of [110] epitaxial nano-plaquettesof Fe covered with superconducting NbN films of varying thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbN
###Robust coupling of superconducting order parameter in a mesoscale NbN-Fe-NbN epitaxial structure|S. K. Bose,R. C. Budhani###
(592803, 592804)
 These structures consist of [110] epitaxial nano-plaquettesof Fe covered with superconducting NbN films of varying thickness.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Robust coupling of superconducting order parameter in a mesoscale NbN-Fe-NbN epitaxial structure|S. K. Bose,R. C. Budhani###
(592817, 592817)
 The S-F-Sstructures are characterized by strong magnetoresistance (MR) anisotropy forthe in-plane and out-of-plane magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Robust coupling of superconducting order parameter in a mesoscale NbN-Fe-NbN epitaxial structure|S. K. Bose,R. C. Budhani###
(592819, 592819)
 The S-F-Sstructures are characterized by strong magnetoresistance (MR) anisotropy forthe in-plane and out-of-plane magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Robust coupling of superconducting order parameter in a mesoscale NbN-Fe-NbN epitaxial structure|S. K. Bose,R. C. Budhani###
(592821, 592821)
 The S-F-Sstructures are characterized by strong magnetoresistance (MR) anisotropy forthe in-plane and out-of-plane magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Robust coupling of superconducting order parameter in a mesoscale NbN-Fe-NbN epitaxial structure|S. K. Bose,R. C. Budhani###
(592883, 592883)
 The stronger in-plane MRsuggests decoherence of S-F-S junctions whose critical current follows a(1-T<missing VAR>/Tc) and (1-T<missing VAR>/Tc)1/2 dependence for T<missing VAR> Tc and T<missing VAR><<Tc respectively, inaccordance with the theory of supercurrent transport in such junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Robust coupling of superconducting order parameter in a mesoscale NbN-Fe-NbN epitaxial structure|S. K. Bose,R. C. Budhani###
(592885, 592885)
 The stronger in-plane MRsuggests decoherence of S-F-S junctions whose critical current follows a(1-T<missing VAR>/Tc) and (1-T<missing VAR>/Tc)1/2 dependence for T<missing VAR> Tc and T<missing VAR><<Tc respectively, inaccordance with the theory of supercurrent transport in such junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Robust coupling of superconducting order parameter in a mesoscale NbN-Fe-NbN epitaxial structure|S. K. Bose,R. C. Budhani###
(592887, 592887)
 The stronger in-plane MRsuggests decoherence of S-F-S junctions whose critical current follows a(1-T<missing VAR>/Tc) and (1-T<missing VAR>/Tc)1/2 dependence for T<missing VAR> Tc and T<missing VAR><<Tc respectively, inaccordance with the theory of supercurrent transport in such junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###Robust coupling of superconducting order parameter in a mesoscale NbN-Fe-NbN epitaxial structure|S. K. Bose,R. C. Budhani###
(592907, 592907)
 The stronger in-plane MRsuggests decoherence of S-F-S junctions whose critical current follows a(1-T<missing VAR>/Tc) and (1-T<missing VAR>/Tc)1/2 dependence for T<missing VAR> Tc and T<missing VAR><<Tc respectively, inaccordance with the theory of supercurrent transport in such junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###Robust coupling of superconducting order parameter in a mesoscale NbN-Fe-NbN epitaxial structure|S. K. Bose,R. C. Budhani###
(592917, 592917)
 The stronger in-plane MRsuggests decoherence of S-F-S junctions whose critical current follows a(1-T<missing VAR>/Tc) and (1-T<missing VAR>/Tc)1/2 dependence for T<missing VAR> Tc and T<missing VAR><<Tc respectively, inaccordance with the theory of supercurrent transport in such junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###Robust coupling of superconducting order parameter in a mesoscale NbN-Fe-NbN epitaxial structure|S. K. Bose,R. C. Budhani###
(592929, 592929)
 The stronger in-plane MRsuggests decoherence of S-F-S junctions whose critical current follows a(1-T<missing VAR>/Tc) and (1-T<missing VAR>/Tc)1/2 dependence for T<missing VAR> Tc and T<missing VAR><<Tc respectively, inaccordance with the theory of supercurrent transport in such junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###Robust coupling of superconducting order parameter in a mesoscale NbN-Fe-NbN epitaxial structure|S. K. Bose,R. C. Budhani###
(592936, 592936)
 The stronger in-plane MRsuggests decoherence of S-F-S junctions whose critical current follows a(1-T<missing VAR>/Tc) and (1-T<missing VAR>/Tc)1/2 dependence for T<missing VAR> Tc and T<missing VAR><<Tc respectively, inaccordance with the theory of supercurrent transport in such junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Top and side gated epitaxial graphene field effect transistors|Xuebin Li,Xiaosong Wu,Mike Sprinkle,Fan Ming,Ming Ruan,Yike Hu,Claire Berger,Walt A. de Heer###
(593246, 593246)
 Three types of first generation epitaxial graphene field effect transistors(FET) are presented and their relative merits are discussed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 30.0, 'C', 3]

F
###Top and side gated epitaxial graphene field effect transistors|Xuebin Li,Xiaosong Wu,Mike Sprinkle,Fan Ming,Ming Ruan,Yike Hu,Claire Berger,Walt A. de Heer###
(593337, 593337)
 FE<missing VAR>Ts patterned onthe Si-face exhibit off-to-on channel resistance ratios that exceed 30. C-faceFE<missing VAR>Ts have lower off-to-on resistance ratios, but their mobilities (up to 5000cm2/Vs) are much larger than that for Si-face transistors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 30.0, 'C', 0]

Si
###Top and side gated epitaxial graphene field effect transistors|Xuebin Li,Xiaosong Wu,Mike Sprinkle,Fan Ming,Ming Ruan,Yike Hu,Claire Berger,Walt A. de Heer###
(593348, 593348)
 FE<missing VAR>Ts patterned onthe Si-face exhibit off-to-on channel resistance ratios that exceed 30. C-faceFE<missing VAR>Ts have lower off-to-on resistance ratios, but their mobilities (up to 5000cm2/Vs) are much larger than that for Si-face transistors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 30.0, 'C', 0]

F
###Top and side gated epitaxial graphene field effect transistors|Xuebin Li,Xiaosong Wu,Mike Sprinkle,Fan Ming,Ming Ruan,Yike Hu,Claire Berger,Walt A. de Heer###
(593374, 593374)
 FE<missing VAR>Ts patterned onthe Si-face exhibit off-to-on channel resistance ratios that exceed 30. C-faceFE<missing VAR>Ts have lower off-to-on resistance ratios, but their mobilities (up to 5000cm2/Vs) are much larger than that for Si-face transistors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 30.0, 'C', 0]

Si
###Top and side gated epitaxial graphene field effect transistors|Xuebin Li,Xiaosong Wu,Mike Sprinkle,Fan Ming,Ming Ruan,Yike Hu,Claire Berger,Walt A. de Heer###
(593425, 593425)
 FE<missing VAR>Ts patterned onthe Si-face exhibit off-to-on channel resistance ratios that exceed 30. C-faceFE<missing VAR>Ts have lower off-to-on resistance ratios, but their mobilities (up to 5000cm2/Vs) are much larger than that for Si-face transistors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 30.0, 'C', 0]

F
###Top and side gated epitaxial graphene field effect transistors|Xuebin Li,Xiaosong Wu,Mike Sprinkle,Fan Ming,Ming Ruan,Yike Hu,Claire Berger,Walt A. de Heer###
(593447, 593447)
 Initialinvestigations into all-graphene side gate FET structures are promising.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 30.0, 'C', 1]

CCo
###Spin-dependent transport in nanocomposite C:Co films|Shengqiang Zhou,Markus Berndt,Danilo Buerger,Viton Heera,Kay Potzger,Gintautas Abrasonis,Gyoergy Radnoczi,Gyoergy J. Kovacs,Andreas Kolitsch,Manfred Helm,Juergen Fassbender,Wolfhard Moeller,Heidemarie Schmidt###
(593476, 593477)
Spin-dependent transport in nanocomposite CCo films.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 40, 'at', 1],[79.0, 200, 'to', 3]

CCo
###Spin-dependent transport in nanocomposite C:Co films|Shengqiang Zhou,Markus Berndt,Danilo Buerger,Viton Heera,Kay Potzger,Gintautas Abrasonis,Gyoergy Radnoczi,Gyoergy J. Kovacs,Andreas Kolitsch,Manfred Helm,Juergen Fassbender,Wolfhard Moeller,Heidemarie Schmidt###
(593494, 593495)
 The magneto-transport properties of nanocomposite CCo (15 and 40 at.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 40, 'at', 0],[61.0, 200, 'to', 2]

Co
###Spin-dependent transport in nanocomposite C:Co films|Shengqiang Zhou,Markus Berndt,Danilo Buerger,Viton Heera,Kay Potzger,Gintautas Abrasonis,Gyoergy Radnoczi,Gyoergy J. Kovacs,Andreas Kolitsch,Manfred Helm,Juergen Fassbender,Wolfhard Moeller,Heidemarie Schmidt###
(593505, 593505)
 Co)thin films are investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 40, 'at', 1],[51.0, 200, 'to', 1]

C
###Spin-dependent transport in nanocomposite C:Co films|Shengqiang Zhou,Markus Berndt,Danilo Buerger,Viton Heera,Kay Potzger,Gintautas Abrasonis,Gyoergy Radnoczi,Gyoergy J. Kovacs,Andreas Kolitsch,Manfred Helm,Juergen Fassbender,Wolfhard Moeller,Heidemarie Schmidt###
(593562, 593562)
 The films were grown by ion beam co-sputtering onthermally oxidized silicon substrates in the temperature range from 200 to 500degC.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 40, 'at', 2],[6.0, 200, 'to', 0]

CCo
###Spin-dependent transport in nanocomposite C:Co films|Shengqiang Zhou,Markus Berndt,Danilo Buerger,Viton Heera,Kay Potzger,Gintautas Abrasonis,Gyoergy Radnoczi,Gyoergy J. Kovacs,Andreas Kolitsch,Manfred Helm,Juergen Fassbender,Wolfhard Moeller,Heidemarie Schmidt###
(593677, 593678)
 These findings suggest that CCo nanocomposites are promisingcandidates for carbon-based Hall sensors and spintronic devices.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[176.0, 40, 'at', 5],[121.0, 200, 'to', 3]

ZnO
###Spinel ferrite nanocrystals embedded inside ZnO: magnetic, electronic and magneto-transport properties|Shengqiang Zhou,K. Potzger,Qingyu Xu,K. Kuepper,G. Talut,D. Marko,A. Muecklich,M. Helm,J. Fassbender,E. Arenholz,H. Schmidt###
(593943, 593944)
Spinel ferrite nanocrystals embedded inside ZnO magnetic, electronic and magneto-transport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spinel ferrite nanocrystals embedded inside ZnO: magnetic, electronic and magneto-transport properties|Shengqiang Zhou,K. Potzger,Qingyu Xu,K. Kuepper,G. Talut,D. Marko,A. Muecklich,M. Helm,J. Fassbender,E. Arenholz,H. Schmidt###
(593960, 593960)
 In this paper we show that spinel ferrite nanocrystals (NiFe2O4, and CoFe2O4)can be texturally embedded inside a ZnO matrix by ion implantation andpost-annealing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiFe2O4
###Spinel ferrite nanocrystals embedded inside ZnO: magnetic, electronic and magneto-transport properties|Shengqiang Zhou,K. Potzger,Qingyu Xu,K. Kuepper,G. Talut,D. Marko,A. Muecklich,M. Helm,J. Fassbender,E. Arenholz,H. Schmidt###
(593979, 593983)
 In this paper we show that spinel ferrite nanocrystals (NiFe2O4, and CoFe2O4)can be texturally embedded inside a ZnO matrix by ion implantation andpost-annealing.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O4
###Spinel ferrite nanocrystals embedded inside ZnO: magnetic, electronic and magneto-transport properties|Shengqiang Zhou,K. Potzger,Qingyu Xu,K. Kuepper,G. Talut,D. Marko,A. Muecklich,M. Helm,J. Fassbender,E. Arenholz,H. Schmidt###
(593991, 593992)
 In this paper we show that spinel ferrite nanocrystals (NiFe2O4, and CoFe2O4)can be texturally embedded inside a ZnO matrix by ion implantation andpost-annealing.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZnO
###Spinel ferrite nanocrystals embedded inside ZnO: magnetic, electronic and magneto-transport properties|Shengqiang Zhou,K. Potzger,Qingyu Xu,K. Kuepper,G. Talut,D. Marko,A. Muecklich,M. Helm,J. Fassbender,E. Arenholz,H. Schmidt###
(594008, 594009)
 In this paper we show that spinel ferrite nanocrystals (NiFe2O4, and CoFe2O4)can be texturally embedded inside a ZnO matrix by ion implantation andpost-annealing.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Spinel ferrite nanocrystals embedded inside ZnO: magnetic, electronic and magneto-transport properties|Shengqiang Zhou,K. Potzger,Qingyu Xu,K. Kuepper,G. Talut,D. Marko,A. Muecklich,M. Helm,J. Fassbender,E. Arenholz,H. Schmidt###
(594138, 594138)
 This hybrid system can be tuned by selecting differenttransition metal ions (from Mn to Zn) to obtain various magnetic and electronicproperties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Zn
###Spinel ferrite nanocrystals embedded inside ZnO: magnetic, electronic and magneto-transport properties|Shengqiang Zhou,K. Potzger,Qingyu Xu,K. Kuepper,G. Talut,D. Marko,A. Muecklich,M. Helm,J. Fassbender,E. Arenholz,H. Schmidt###
(594142, 594142)
 This hybrid system can be tuned by selecting differenttransition metal ions (from Mn to Zn) to obtain various magnetic and electronicproperties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Modeling Antiferromagnetic Phase in Iron Pnictides: Weakly Ordered State|E. Kaneshita,T. Morinari,T. Tohyama###
(594295, 594295)
 We find that a five-bandmodel exhibiting a small magnetic moment, inconsistent with thefirst-principles calculations, reproduces well the excitation spectracharacterized by a multi-peak structure emerging below the Ne<missing VAR>el temperatureat low energy, together with an almost temperature-independent structure athigh energy.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.67Ba0.33MnO3
###A large magnetoinductance effect in La0.67Ba0.33MnO3|V. B. Naik,A. Rebello,R. Mahendiran###
(594388, 594394)
A large magnetoinductance effect in La0.67Ba0.33MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.066,0.134,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 100, 'kHz', 1],[64.0, 325, 'K', 2],[133.0, 60, '%', 3],[140.0, 1, 'kG', 3],[165.0, 1, 'kG', 3]

La0.67Ba0.33MnO3
###A large magnetoinductance effect in La0.67Ba0.33MnO3|V. B. Naik,A. Rebello,R. Mahendiran###
(594409, 594415)
 We report four probe impedance of La0.67Ba0.33MnO3 at f<missing VAR>  100 kHz underdifferent dc bias magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.066,0.134,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 100, 'kHz', 0],[43.0, 325, 'K', 1],[112.0, 60, '%', 2],[119.0, 1, 'kG', 2],[144.0, 1, 'kG', 2]

H
###A large magnetoinductance effect in La0.67Ba0.33MnO3|V. B. Naik,A. Rebello,R. Mahendiran###
(594532, 594532)
 The magnetoreactance exhibits a sharp peak close to Tp andits magnitude ( 60% in H  1 kG) exceeds that of the ac magnetoresistance ( 5% inH  1 kG).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 100, 'kHz', 2],[74.0, 325, 'K', 1],[5.0, 60, '%', 0],[2.0, 1, 'kG', 0],[27.0, 1, 'kG', 0]

H
###A large magnetoinductance effect in La0.67Ba0.33MnO3|V. B. Naik,A. Rebello,R. Mahendiran###
(594557, 594557)
 The magnetoreactance exhibits a sharp peak close to Tp andits magnitude ( 60% in H  1 kG) exceeds that of the ac magnetoresistance ( 5% inH  1 kG).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 100, 'kHz', 2],[99.0, 325, 'K', 1],[30.0, 60, '%', 0],[23.0, 1, 'kG', 0],[2.0, 1, 'kG', 0]

F
###Anisotropy of the Spin Density Wave Onset for (TMTSF)_2PF_6 in Magnetic Field|Ya. A. Gerasimenko,V. A. Prudkoglyad,A. V. Kornilov,V. M. Pudalov,V. N. Zverev,A. -K. Klehe,J. S. Qualls###
(595116, 595116)
Anisotropy of the Spin Density Wave Onset for (TMTSF)2PF6 in Magnetic Field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 19, 'T', 1],[128.0, 5, 'kbar', 2],[219.0, 0.05, 'K', 4]

PF6
###Anisotropy of the Spin Density Wave Onset for (TMTSF)_2PF_6 in Magnetic Field|Ya. A. Gerasimenko,V. A. Prudkoglyad,A. V. Kornilov,V. M. Pudalov,V. N. Zverev,A. -K. Klehe,J. S. Qualls###
(595119, 595121)
Anisotropy of the Spin Density Wave Onset for (TMTSF)2PF6 in Magnetic Field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.8571428571428571,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 19, 'T', 1],[123.0, 5, 'kbar', 2],[214.0, 0.05, 'K', 4]

In
###Anisotropy of the Spin Density Wave Onset for (TMTSF)_2PF_6 in Magnetic Field|Ya. A. Gerasimenko,V. A. Prudkoglyad,A. V. Kornilov,V. M. Pudalov,V. N. Zverev,A. -K. Klehe,J. S. Qualls###
(595130, 595130)
 In order to study the spin density wave transition temperature (TSDW) in(TMTSF)2PF6 as a function of magnetic field, we measured themagnetoresistance R<missing VAR>zz in fields up to 19 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 19, 'T', 0],[114.0, 5, 'kbar', 1],[205.0, 0.05, 'K', 3]

W
###Anisotropy of the Spin Density Wave Onset for (TMTSF)_2PF_6 in Magnetic Field|Ya. A. Gerasimenko,V. A. Prudkoglyad,A. V. Kornilov,V. M. Pudalov,V. N. Zverev,A. -K. Klehe,J. S. Qualls###
(595154, 595154)
 In order to study the spin density wave transition temperature (TSDW) in(TMTSF)2PF6 as a function of magnetic field, we measured themagnetoresistance R<missing VAR>zz in fields up to 19 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 19, 'T', 0],[90.0, 5, 'kbar', 1],[181.0, 0.05, 'K', 3]

F
###Anisotropy of the Spin Density Wave Onset for (TMTSF)_2PF_6 in Magnetic Field|Ya. A. Gerasimenko,V. A. Prudkoglyad,A. V. Kornilov,V. M. Pudalov,V. N. Zverev,A. -K. Klehe,J. S. Qualls###
(595165, 595165)
 In order to study the spin density wave transition temperature (TSDW) in(TMTSF)2PF6 as a function of magnetic field, we measured themagnetoresistance R<missing VAR>zz in fields up to 19 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 19, 'T', 0],[79.0, 5, 'kbar', 1],[170.0, 0.05, 'K', 3]

PF6
###Anisotropy of the Spin Density Wave Onset for (TMTSF)_2PF_6 in Magnetic Field|Ya. A. Gerasimenko,V. A. Prudkoglyad,A. V. Kornilov,V. M. Pudalov,V. N. Zverev,A. -K. Klehe,J. S. Qualls###
(595168, 595170)
 In order to study the spin density wave transition temperature (TSDW) in(TMTSF)2PF6 as a function of magnetic field, we measured themagnetoresistance R<missing VAR>zz in fields up to 19 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.8571428571428571,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 19, 'T', 0],[74.0, 5, 'kbar', 1],[165.0, 0.05, 'K', 3]

B
###Anisotropy of the Spin Density Wave Onset for (TMTSF)_2PF_6 in Magnetic Field|Ya. A. Gerasimenko,V. A. Prudkoglyad,A. V. Kornilov,V. M. Pudalov,V. N. Zverev,A. -K. Klehe,J. S. Qualls###
(595222, 595222)
 Measurements were performed forthree field orientations Ba, b<missing VAR> and c<missing VAR> at ambient pressure and at P  5 kbar,that is nearly the critical pressure.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 19, 'T', 1],[22.0, 5, 'kbar', 0],[113.0, 0.05, 'K', 2]

P
###Anisotropy of the Spin Density Wave Onset for (TMTSF)_2PF_6 in Magnetic Field|Ya. A. Gerasimenko,V. A. Prudkoglyad,A. V. Kornilov,V. M. Pudalov,V. N. Zverev,A. -K. Klehe,J. S. Qualls###
(595242, 595242)
 Measurements were performed forthree field orientations Ba, b<missing VAR> and c<missing VAR> at ambient pressure and at P  5 kbar,that is nearly the critical pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 19, 'T', 1],[2.0, 5, 'kbar', 0],[93.0, 0.05, 'K', 2]

B
###Anisotropy of the Spin Density Wave Onset for (TMTSF)_2PF_6 in Magnetic Field|Ya. A. Gerasimenko,V. A. Prudkoglyad,A. V. Kornilov,V. M. Pudalov,V. N. Zverev,A. -K. Klehe,J. S. Qualls###
(595263, 595263)
 For Bc<missing VAR> orientation we observedquadratic field dependence of TSDW in agreement with theory and with previousexperiments.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 19, 'T', 2],[19.0, 5, 'kbar', 1],[72.0, 0.05, 'K', 1]

W
###Anisotropy of the Spin Density Wave Onset for (TMTSF)_2PF_6 in Magnetic Field|Ya. A. Gerasimenko,V. A. Prudkoglyad,A. V. Kornilov,V. M. Pudalov,V. N. Zverev,A. -K. Klehe,J. S. Qualls###
(595284, 595284)
 For Bc<missing VAR> orientation we observedquadratic field dependence of TSDW in agreement with theory and with previousexperiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 19, 'T', 2],[40.0, 5, 'kbar', 1],[51.0, 0.05, 'K', 1]

B
###Anisotropy of the Spin Density Wave Onset for (TMTSF)_2PF_6 in Magnetic Field|Ya. A. Gerasimenko,V. A. Prudkoglyad,A. V. Kornilov,V. M. Pudalov,V. N. Zverev,A. -K. Klehe,J. S. Qualls###
(595306, 595306)
 For Bb<missing VAR> and Ba orientations we have found no shift in TSDWwithin 0.05 K, both at P0 and P5 kbar.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 19, 'T', 3],[62.0, 5, 'kbar', 2],[29.0, 0.05, 'K', 0]

B
###Anisotropy of the Spin Density Wave Onset for (TMTSF)_2PF_6 in Magnetic Field|Ya. A. Gerasimenko,V. A. Prudkoglyad,A. V. Kornilov,V. M. Pudalov,V. N. Zverev,A. -K. Klehe,J. S. Qualls###
(595311, 595311)
 For Bb<missing VAR> and Ba orientations we have found no shift in TSDWwithin 0.05 K, both at P0 and P5 kbar.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 19, 'T', 3],[67.0, 5, 'kbar', 2],[24.0, 0.05, 'K', 0]

W
###Anisotropy of the Spin Density Wave Onset for (TMTSF)_2PF_6 in Magnetic Field|Ya. A. Gerasimenko,V. A. Prudkoglyad,A. V. Kornilov,V. M. Pudalov,V. N. Zverev,A. -K. Klehe,J. S. Qualls###
(595331, 595331)
 For Bb<missing VAR> and Ba orientations we have found no shift in TSDWwithin 0.05 K, both at P0 and P5 kbar.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 19, 'T', 3],[87.0, 5, 'kbar', 2],[4.0, 0.05, 'K', 0]

P0
###Anisotropy of the Spin Density Wave Onset for (TMTSF)_2PF_6 in Magnetic Field|Ya. A. Gerasimenko,V. A. Prudkoglyad,A. V. Kornilov,V. M. Pudalov,V. N. Zverev,A. -K. Klehe,J. S. Qualls###
(595342, 595343)
 For Bb<missing VAR> and Ba orientations we have found no shift in TSDWwithin 0.05 K, both at P0 and P5 kbar.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 19, 'T', 3],[98.0, 5, 'kbar', 2],[7.0, 0.05, 'K', 0]

P5
###Anisotropy of the Spin Density Wave Onset for (TMTSF)_2PF_6 in Magnetic Field|Ya. A. Gerasimenko,V. A. Prudkoglyad,A. V. Kornilov,V. M. Pudalov,V. N. Zverev,A. -K. Klehe,J. S. Qualls###
(595347, 595348)
 For Bb<missing VAR> and Ba orientations we have found no shift in TSDWwithin 0.05 K, both at P0 and P5 kbar.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 19, 'T', 3],[103.0, 5, 'kbar', 2],[12.0, 0.05, 'K', 0]

In
###In-plane electronic anisotropy in underdoped Ba(Fe$_{1-x}$Co$_x$)$_2$As$_2$ revealed by detwinning in a magnetic field|Jiun-Haw Chu,James G. Analytis,David Press,Kristiaan De Greve,Thaddeus D. Ladd,Yoshihisa Yamamoto,Ian R. Fisher###
(595379, 595379)
In-plane electronic anisotropy in underdoped Ba(Fe1-xCox)2As2 revealed by detwinning in a magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 14, 'T', 1]

Ba
###In-plane electronic anisotropy in underdoped Ba(Fe$_{1-x}$Co$_x$)$_2$As$_2$ revealed by detwinning in a magnetic field|Jiun-Haw Chu,James G. Analytis,David Press,Kristiaan De Greve,Thaddeus D. Ladd,Yoshihisa Yamamoto,Ian R. Fisher###
(595391, 595391)
In-plane electronic anisotropy in underdoped Ba(Fe1-xCox)2As2 revealed by detwinning in a magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 14, 'T', 1]

Fe1-xCo
###In-plane electronic anisotropy in underdoped Ba(Fe$_{1-x}$Co$_x$)$_2$As$_2$ revealed by detwinning in a magnetic field|Jiun-Haw Chu,James G. Analytis,David Press,Kristiaan De Greve,Thaddeus D. Ladd,Yoshihisa Yamamoto,Ian R. Fisher###
(595393, 595397)
In-plane electronic anisotropy in underdoped Ba(Fe1-xCox)2As2 revealed by detwinning in a magnetic field.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[80.0, 14, 'T', 1]

As2
###In-plane electronic anisotropy in underdoped Ba(Fe$_{1-x}$Co$_x$)$_2$As$_2$ revealed by detwinning in a magnetic field|Jiun-Haw Chu,James G. Analytis,David Press,Kristiaan De Greve,Thaddeus D. Ladd,Yoshihisa Yamamoto,Ian R. Fisher###
(595401, 595402)
In-plane electronic anisotropy in underdoped Ba(Fe1-xCox)2As2 revealed by detwinning in a magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 14, 'T', 1]

Ba
###In-plane electronic anisotropy in underdoped Ba(Fe$_{1-x}$Co$_x$)$_2$As$_2$ revealed by detwinning in a magnetic field|Jiun-Haw Chu,James G. Analytis,David Press,Kristiaan De Greve,Thaddeus D. Ladd,Yoshihisa Yamamoto,Ian R. Fisher###
(595448, 595448)
 We present results of angle-dependent magnetoresistance measurements anddirect optical images of underdoped Ba(Fe1-xCox)2As2 which revealpartial detwinning by action of a 14T magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 14, 'T', 0]

Fe1-xCo
###In-plane electronic anisotropy in underdoped Ba(Fe$_{1-x}$Co$_x$)$_2$As$_2$ revealed by detwinning in a magnetic field|Jiun-Haw Chu,James G. Analytis,David Press,Kristiaan De Greve,Thaddeus D. Ladd,Yoshihisa Yamamoto,Ian R. Fisher###
(595450, 595454)
 We present results of angle-dependent magnetoresistance measurements anddirect optical images of underdoped Ba(Fe1-xCox)2As2 which revealpartial detwinning by action of a 14T magnetic field.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[23.0, 14, 'T', 0]

As2
###In-plane electronic anisotropy in underdoped Ba(Fe$_{1-x}$Co$_x$)$_2$As$_2$ revealed by detwinning in a magnetic field|Jiun-Haw Chu,James G. Analytis,David Press,Kristiaan De Greve,Thaddeus D. Ladd,Yoshihisa Yamamoto,Ian R. Fisher###
(595458, 595459)
 We present results of angle-dependent magnetoresistance measurements anddirect optical images of underdoped Ba(Fe1-xCox)2As2 which revealpartial detwinning by action of a 14T magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 14, 'T', 0]

O22
###Pseudo Spin Valves Using a (112)-textured DO_22 MnGa Fixed Layer|C. L. Zha,R. K. Dumas,J. Persson,S. M. Mohseni,J. Nogués,Johan Åkerman###
(595622, 595623)
Pseudo Spin Valves Using a (112)-textured D<missing VAR>O22 MnGa Fixed Layer.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, -0.08, '%', 3],[139.0, 3.88, '%', 3]

MnGa
###Pseudo Spin Valves Using a (112)-textured DO_22 MnGa Fixed Layer|C. L. Zha,R. K. Dumas,J. Persson,S. M. Mohseni,J. Nogués,Johan Åkerman###
(595625, 595626)
Pseudo Spin Valves Using a (112)-textured D<missing VAR>O22 MnGa Fixed Layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, -0.08, '%', 3],[136.0, 3.88, '%', 3]

O22
###Pseudo Spin Valves Using a (112)-textured DO_22 MnGa Fixed Layer|C. L. Zha,R. K. Dumas,J. Persson,S. M. Mohseni,J. Nogués,Johan Åkerman###
(595654, 595655)
 We demonstrate pseudo spin valves with a (112)-textured D<missing VAR>O22 MnGa (MnGa)tilted magnetization fixed layer and an in-plane CoFe free layer.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, -0.08, '%', 2],[107.0, 3.88, '%', 2]

MnGa
###Pseudo Spin Valves Using a (112)-textured DO_22 MnGa Fixed Layer|C. L. Zha,R. K. Dumas,J. Persson,S. M. Mohseni,J. Nogués,Johan Åkerman###
(595657, 595658)
 We demonstrate pseudo spin valves with a (112)-textured D<missing VAR>O22 MnGa (MnGa)tilted magnetization fixed layer and an in-plane CoFe free layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, -0.08, '%', 2],[104.0, 3.88, '%', 2]

(MnGa)
###Pseudo Spin Valves Using a (112)-textured DO_22 MnGa Fixed Layer|C. L. Zha,R. K. Dumas,J. Persson,S. M. Mohseni,J. Nogués,Johan Åkerman###
(595660, 595663)
 We demonstrate pseudo spin valves with a (112)-textured D<missing VAR>O22 MnGa (MnGa)tilted magnetization fixed layer and an in-plane CoFe free layer.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, -0.08, '%', 2],[99.0, 3.88, '%', 2]

CoFe
###Pseudo Spin Valves Using a (112)-textured DO_22 MnGa Fixed Layer|C. L. Zha,R. K. Dumas,J. Persson,S. M. Mohseni,J. Nogués,Johan Åkerman###
(595682, 595683)
 We demonstrate pseudo spin valves with a (112)-textured D<missing VAR>O22 MnGa (MnGa)tilted magnetization fixed layer and an in-plane CoFe free layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, -0.08, '%', 2],[79.0, 3.88, '%', 2]

MnGa
###Pseudo Spin Valves Using a (112)-textured DO_22 MnGa Fixed Layer|C. L. Zha,R. K. Dumas,J. Persson,S. M. Mohseni,J. Nogués,Johan Åkerman###
(595697, 595698)
 Single D<missing VAR>022MnGa films exhibit a small magnetoresistance (MR) typically observed in metals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, -0.08, '%', 1],[64.0, 3.88, '%', 1]

In
###Pseudo Spin Valves Using a (112)-textured DO_22 MnGa Fixed Layer|C. L. Zha,R. K. Dumas,J. Persson,S. M. Mohseni,J. Nogués,Johan Åkerman###
(595725, 595725)
In MnGa/Cu/ CoFe spin valves a transition from a negative (-0.08%) to positive(3.88%) MR is realized by introducing a thin spin polarizing CoFe insertionlayer at the MnGa/Cu interface and tailoring the MnGa thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, -0.08, '%', 0],[37.0, 3.88, '%', 0]

MnGa/Cu
###Pseudo Spin Valves Using a (112)-textured DO_22 MnGa Fixed Layer|C. L. Zha,R. K. Dumas,J. Persson,S. M. Mohseni,J. Nogués,Johan Åkerman###
(595727, 595730)
In MnGa/Cu/ CoFe spin valves a transition from a negative (-0.08%) to positive(3.88%) MR is realized by introducing a thin spin polarizing CoFe insertionlayer at the MnGa/Cu interface and tailoring the MnGa thickness.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[21.0, -0.08, '%', 0],[32.0, 3.88, '%', 0]

CoFe
###Pseudo Spin Valves Using a (112)-textured DO_22 MnGa Fixed Layer|C. L. Zha,R. K. Dumas,J. Persson,S. M. Mohseni,J. Nogués,Johan Åkerman###
(595733, 595734)
In MnGa/Cu/ CoFe spin valves a transition from a negative (-0.08%) to positive(3.88%) MR is realized by introducing a thin spin polarizing CoFe insertionlayer at the MnGa/Cu interface and tailoring the MnGa thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, -0.08, '%', 0],[28.0, 3.88, '%', 0]

CoFe
###Pseudo Spin Valves Using a (112)-textured DO_22 MnGa Fixed Layer|C. L. Zha,R. K. Dumas,J. Persson,S. M. Mohseni,J. Nogués,Johan Åkerman###
(595785, 595786)
In MnGa/Cu/ CoFe spin valves a transition from a negative (-0.08%) to positive(3.88%) MR is realized by introducing a thin spin polarizing CoFe insertionlayer at the MnGa/Cu interface and tailoring the MnGa thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, -0.08, '%', 0],[23.0, 3.88, '%', 0]

MnGa/Cu
###Pseudo Spin Valves Using a (112)-textured DO_22 MnGa Fixed Layer|C. L. Zha,R. K. Dumas,J. Persson,S. M. Mohseni,J. Nogués,Johan Åkerman###
(595797, 595800)
In MnGa/Cu/ CoFe spin valves a transition from a negative (-0.08%) to positive(3.88%) MR is realized by introducing a thin spin polarizing CoFe insertionlayer at the MnGa/Cu interface and tailoring the MnGa thickness.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[46.0, -0.08, '%', 0],[35.0, 3.88, '%', 0]

MnGa
###Pseudo Spin Valves Using a (112)-textured DO_22 MnGa Fixed Layer|C. L. Zha,R. K. Dumas,J. Persson,S. M. Mohseni,J. Nogués,Johan Åkerman###
(595810, 595811)
In MnGa/Cu/ CoFe spin valves a transition from a negative (-0.08%) to positive(3.88%) MR is realized by introducing a thin spin polarizing CoFe insertionlayer at the MnGa/Cu interface and tailoring the MnGa thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, -0.08, '%', 0],[48.0, 3.88, '%', 0]

MnGa
###Pseudo Spin Valves Using a (112)-textured DO_22 MnGa Fixed Layer|C. L. Zha,R. K. Dumas,J. Persson,S. M. Mohseni,J. Nogués,Johan Åkerman###
(595830, 595831)
 Finally, theexchange coupling between the MnGa and CoFe insertion layer is studied using afirst-order reversal curve (FOR<missing VAR>C) technique.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, -0.08, '%', 1],[68.0, 3.88, '%', 1]

CoFe
###Pseudo Spin Valves Using a (112)-textured DO_22 MnGa Fixed Layer|C. L. Zha,R. K. Dumas,J. Persson,S. M. Mohseni,J. Nogués,Johan Åkerman###
(595835, 595836)
 Finally, theexchange coupling between the MnGa and CoFe insertion layer is studied using afirst-order reversal curve (FOR<missing VAR>C) technique.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, -0.08, '%', 1],[73.0, 3.88, '%', 1]

FO
###Pseudo Spin Valves Using a (112)-textured DO_22 MnGa Fixed Layer|C. L. Zha,R. K. Dumas,J. Persson,S. M. Mohseni,J. Nogués,Johan Åkerman###
(595860, 595861)
 Finally, theexchange coupling between the MnGa and CoFe insertion layer is studied using afirst-order reversal curve (FOR<missing VAR>C) technique.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, -0.08, '%', 1],[98.0, 3.88, '%', 1]

C
###Pseudo Spin Valves Using a (112)-textured DO_22 MnGa Fixed Layer|C. L. Zha,R. K. Dumas,J. Persson,S. M. Mohseni,J. Nogués,Johan Åkerman###
(595863, 595863)
 Finally, theexchange coupling between the MnGa and CoFe insertion layer is studied using afirst-order reversal curve (FOR<missing VAR>C) technique.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, -0.08, '%', 1],[101.0, 3.88, '%', 1]

Sm0.6Sr0.4MnO3
###Current driven discontinuous insulator-metal transition and colossal low-field magnetoresistance in Sm0.6Sr0.4MnO3|A. Rebello,R. Mahendiran###
(595901, 595907)
Current driven discontinuous insulator-metal transition and colossal low-field magnetoresistance in Sm0.6Sr0.4MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.08,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.12,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, -99, '%', 2],[120.0, 0.5, 'T', 2],[123.0, 70, 'K', 2],[140.0, 0, 'T', 2],[154.0, 11, 'mA', 2]

(I)
###Current driven discontinuous insulator-metal transition and colossal low-field magnetoresistance in Sm0.6Sr0.4MnO3|A. Rebello,R. Mahendiran###
(595928, 595930)
 It is shown that with increasing magnitude of current (I), resistivity ofSm0.6Sr0.4MnO3 transforms from a smooth to a discontinuous insulator-metaltransition which is also accompanied by an abrupt decrease in temperature ofthe sample.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, -99, '%', 1],[97.0, 0.5, 'T', 1],[100.0, 70, 'K', 1],[117.0, 0, 'T', 1],[131.0, 11, 'mA', 1]

Sm0.6Sr0.4MnO3
###Current driven discontinuous insulator-metal transition and colossal low-field magnetoresistance in Sm0.6Sr0.4MnO3|A. Rebello,R. Mahendiran###
(595938, 595944)
 It is shown that with increasing magnitude of current (I), resistivity ofSm0.6Sr0.4MnO3 transforms from a smooth to a discontinuous insulator-metaltransition which is also accompanied by an abrupt decrease in temperature ofthe sample.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.08,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.12,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, -99, '%', 1],[83.0, 0.5, 'T', 1],[86.0, 70, 'K', 1],[103.0, 0, 'T', 1],[117.0, 11, 'mA', 1]

H
###Current driven discontinuous insulator-metal transition and colossal low-field magnetoresistance in Sm0.6Sr0.4MnO3|A. Rebello,R. Mahendiran###
(596025, 596025)
 We report colossal low-field magnetoresistance under a high currentbias (-99% at H  0.5 T and 70 K) and electroresistance (-8000 % at H  0 T and60 K) for I  11 mA.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, -99, '%', 0],[2.0, 0.5, 'T', 0],[5.0, 70, 'K', 0],[22.0, 0, 'T', 0],[36.0, 11, 'mA', 0]

H
###Current driven discontinuous insulator-metal transition and colossal low-field magnetoresistance in Sm0.6Sr0.4MnO3|A. Rebello,R. Mahendiran###
(596045, 596045)
 We report colossal low-field magnetoresistance under a high currentbias (-99% at H  0.5 T and 70 K) and electroresistance (-8000 % at H  0 T and60 K) for I  11 mA.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, -99, '%', 0],[18.0, 0.5, 'T', 0],[15.0, 70, 'K', 0],[2.0, 0, 'T', 0],[16.0, 11, 'mA', 0]

K
###Current driven discontinuous insulator-metal transition and colossal low-field magnetoresistance in Sm0.6Sr0.4MnO3|A. Rebello,R. Mahendiran###
(596054, 596054)
 We report colossal low-field magnetoresistance under a high currentbias (-99% at H  0.5 T and 70 K) and electroresistance (-8000 % at H  0 T and60 K) for I  11 mA.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, -99, '%', 0],[27.0, 0.5, 'T', 0],[24.0, 70, 'K', 0],[7.0, 0, 'T', 0],[7.0, 11, 'mA', 0]

I
###Current driven discontinuous insulator-metal transition and colossal low-field magnetoresistance in Sm0.6Sr0.4MnO3|A. Rebello,R. Mahendiran###
(596059, 596059)
 We report colossal low-field magnetoresistance under a high currentbias (-99% at H  0.5 T and 70 K) and electroresistance (-8000 % at H  0 T and60 K) for I  11 mA.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, -99, '%', 0],[32.0, 0.5, 'T', 0],[29.0, 70, 'K', 0],[12.0, 0, 'T', 0],[2.0, 11, 'mA', 0]

OSF
###Magnetoresistance of a spin MOSFET with ferromagnetic MnAs source and drain contacts|Ryosho. Nakane,Tomoyuki Harada,Kuniaki Sugiura,Satoshi Sugahara,Masaaki Tanaka###
(596142, 596144)
Magnetoresistance of a spin M<missing VAR>OSFET with ferromagnetic MnAs source and drain contacts.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnAs
###Magnetoresistance of a spin MOSFET with ferromagnetic MnAs source and drain contacts|Ryosho. Nakane,Tomoyuki Harada,Kuniaki Sugiura,Satoshi Sugahara,Masaaki Tanaka###
(596152, 596153)
Magnetoresistance of a spin M<missing VAR>OSFET with ferromagnetic MnAs source and drain contacts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OSF
###Magnetoresistance of a spin MOSFET with ferromagnetic MnAs source and drain contacts|Ryosho. Nakane,Tomoyuki Harada,Kuniaki Sugiura,Satoshi Sugahara,Masaaki Tanaka###
(596197, 596199)
 Spin-dependent transport was investigated in a spin metal-oxide-semiconductorfield-effect transistors (spin M<missing VAR>OSFET) with ferromagnetic MnAs source and drain(S/D) contacts.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnAs
###Magnetoresistance of a spin MOSFET with ferromagnetic MnAs source and drain contacts|Ryosho. Nakane,Tomoyuki Harada,Kuniaki Sugiura,Satoshi Sugahara,Masaaki Tanaka###
(596208, 596209)
 Spin-dependent transport was investigated in a spin metal-oxide-semiconductorfield-effect transistors (spin M<missing VAR>OSFET) with ferromagnetic MnAs source and drain(S/D) contacts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Magnetoresistance of a spin MOSFET with ferromagnetic MnAs source and drain contacts|Ryosho. Nakane,Tomoyuki Harada,Kuniaki Sugiura,Satoshi Sugahara,Masaaki Tanaka###
(596219, 596219)
 Spin-dependent transport was investigated in a spin metal-oxide-semiconductorfield-effect transistors (spin M<missing VAR>OSFET) with ferromagnetic MnAs source and drain(S/D) contacts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OSF
###Magnetoresistance of a spin MOSFET with ferromagnetic MnAs source and drain contacts|Ryosho. Nakane,Tomoyuki Harada,Kuniaki Sugiura,Satoshi Sugahara,Masaaki Tanaka###
(596232, 596234)
 The spin M<missing VAR>OSFET of bottom-gate type was fabricated byphotolithography using an epitaxial MnAs film grown on a silicon-on-insulator(SOI) substrate.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnAs
###Magnetoresistance of a spin MOSFET with ferromagnetic MnAs source and drain contacts|Ryosho. Nakane,Tomoyuki Harada,Kuniaki Sugiura,Satoshi Sugahara,Masaaki Tanaka###
(596261, 596262)
 The spin M<missing VAR>OSFET of bottom-gate type was fabricated byphotolithography using an epitaxial MnAs film grown on a silicon-on-insulator(SOI) substrate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(SOI)
###Magnetoresistance of a spin MOSFET with ferromagnetic MnAs source and drain contacts|Ryosho. Nakane,Tomoyuki Harada,Kuniaki Sugiura,Satoshi Sugahara,Masaaki Tanaka###
(596279, 596283)
 The spin M<missing VAR>OSFET of bottom-gate type was fabricated byphotolithography using an epitaxial MnAs film grown on a silicon-on-insulator(SOI) substrate.
Featurization successful!
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magnetoresistance of a spin MOSFET with ferromagnetic MnAs source and drain contacts|Ryosho. Nakane,Tomoyuki Harada,Kuniaki Sugiura,Satoshi Sugahara,Masaaki Tanaka###
(596288, 596288)
 In-plane magnetoresistance showed spin-valve-type hystereticbehavior, when the measurements were performed with constant source-drain andsource-gate biases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnAs
###Magnetoresistance of a spin MOSFET with ferromagnetic MnAs source and drain contacts|Ryosho. Nakane,Tomoyuki Harada,Kuniaki Sugiura,Satoshi Sugahara,Masaaki Tanaka###
(596359, 596360)
 By comparing with the magnetization-related resistancechange resulting from the MnAs contacts, we conclude that the spin-polarizedelectrons are injected from the MnAs source into the Si M<missing VAR>OS inversion channel,and detected by the MnAs drain.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnAs
###Magnetoresistance of a spin MOSFET with ferromagnetic MnAs source and drain contacts|Ryosho. Nakane,Tomoyuki Harada,Kuniaki Sugiura,Satoshi Sugahara,Masaaki Tanaka###
(596388, 596389)
 By comparing with the magnetization-related resistancechange resulting from the MnAs contacts, we conclude that the spin-polarizedelectrons are injected from the MnAs source into the Si M<missing VAR>OS inversion channel,and detected by the MnAs drain.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Magnetoresistance of a spin MOSFET with ferromagnetic MnAs source and drain contacts|Ryosho. Nakane,Tomoyuki Harada,Kuniaki Sugiura,Satoshi Sugahara,Masaaki Tanaka###
(596397, 596397)
 By comparing with the magnetization-related resistancechange resulting from the MnAs contacts, we conclude that the spin-polarizedelectrons are injected from the MnAs source into the Si M<missing VAR>OS inversion channel,and detected by the MnAs drain.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OS
###Magnetoresistance of a spin MOSFET with ferromagnetic MnAs source and drain contacts|Ryosho. Nakane,Tomoyuki Harada,Kuniaki Sugiura,Satoshi Sugahara,Masaaki Tanaka###
(596400, 596401)
 By comparing with the magnetization-related resistancechange resulting from the MnAs contacts, we conclude that the spin-polarizedelectrons are injected from the MnAs source into the Si M<missing VAR>OS inversion channel,and detected by the MnAs drain.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnAs
###Magnetoresistance of a spin MOSFET with ferromagnetic MnAs source and drain contacts|Ryosho. Nakane,Tomoyuki Harada,Kuniaki Sugiura,Satoshi Sugahara,Masaaki Tanaka###
(596417, 596418)
 By comparing with the magnetization-related resistancechange resulting from the MnAs contacts, we conclude that the spin-polarizedelectrons are injected from the MnAs source into the Si M<missing VAR>OS inversion channel,and detected by the MnAs drain.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Thermoelectrically Controlled Spin-Switch|S. Andersson,V. Korenivski###
(596476, 596476)
 In this work we experimentally demonstrate adevice based on thermoelectrically controlled exchange coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Thermoelectrically Controlled Spin-Switch|S. Andersson,V. Korenivski###
(596544, 596544)
 The read outsignal from a giant magnetoresistance element is controlled by exchangecoupling through a weakly ferromagnetic Ni-Cu alloy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Thermoelectrically Controlled Spin-Switch|S. Andersson,V. Korenivski###
(596546, 596546)
 The read outsignal from a giant magnetoresistance element is controlled by exchangecoupling through a weakly ferromagnetic Ni-Cu alloy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Crossover between distinct mechanisms of microwave photoresistance in bilayer systems|S. Wiedmann,G. M. Gusev,O. E. Raichev,A. K. Bakarov,J. C. Portal###
(596811, 596811)
We have found that the resistance oscillations are described by themicrowave-induced modification of electron distribution function limited byinelastic scattering (inelastic mechanism), up to a temperature of T<missing VAR>4 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PbS
###Spin-Orbit Coupling and Anomalous Angular-Dependent Magnetoresistance in the Quantum Transport Regime of PbS|Kazuma Eto,A. A. Taskin,Kouji Segawa,Yoichi Ando###
(596966, 596967)
Spin-Orbit Coupling and Anomalous Angular-Dependent Magnetoresistance in the Quantum Transport Regime of PbS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PbS
###Spin-Orbit Coupling and Anomalous Angular-Dependent Magnetoresistance in the Quantum Transport Regime of PbS|Kazuma Eto,A. A. Taskin,Kouji Segawa,Yoichi Ando###
(596980, 596981)
 We measured magnetotransport properties of PbS single crystals which exhibitthe quantum linear magnetoresistance (MR) as well as the static skin effectthat creates a surface layer of additional conductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin-Orbit Coupling and Anomalous Angular-Dependent Magnetoresistance in the Quantum Transport Regime of PbS|Kazuma Eto,A. A. Taskin,Kouji Segawa,Yoichi Ando###
(597075, 597075)
 In the angular-dependent MR, sharp peaks are observed when themagnetic field is slightly inclined from the longitudinal configuration, whichis totally unexpected for a system with nearly spherical Fermi surface andpoints to an intricate interplay between the spin-orbit coupling and theconducting surface layer in the quantum transport regime.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2212
###Signatures of pressure induced superconductivity in insulating Bi2212|T. Cuk,D. A. Zocco,H. Eisaki,V. Struzhkin,M. Grosche,M. B. Maple,Z. -X. Shen###
(597481, 597482)
Signatures of pressure induced superconductivity in insulating Bi2212.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[170.0, 10, 'K', 4]

Bi1.98Sr2.06Y0.68Cu2O8
###Signatures of pressure induced superconductivity in insulating Bi2212|T. Cuk,D. A. Zocco,H. Eisaki,V. Struzhkin,M. Grosche,M. B. Maple,Z. -X. Shen###
(597506, 597515)
 We have performed several high pressure electrical resistance experiments onBi1.98Sr2.06Y0.68Cu2O8, an insulating parent compound of the high-Tc Bi2212family of copper oxide superconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5434782608695653,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13586956521739132,0,0,0,0,0,0,0,0,0.13994565217391305,0.04619565217391305,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1345108695652174,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 10, 'K', 3]

Tc
###Signatures of pressure induced superconductivity in insulating Bi2212|T. Cuk,D. A. Zocco,H. Eisaki,V. Struzhkin,M. Grosche,M. B. Maple,Z. -X. Shen###
(597532, 597532)
 We have performed several high pressure electrical resistance experiments onBi1.98Sr2.06Y0.68Cu2O8, an insulating parent compound of the high-Tc Bi2212family of copper oxide superconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 10, 'K', 3]

Bi2212
###Signatures of pressure induced superconductivity in insulating Bi2212|T. Cuk,D. A. Zocco,H. Eisaki,V. Struzhkin,M. Grosche,M. B. Maple,Z. -X. Shen###
(597534, 597535)
 We have performed several high pressure electrical resistance experiments onBi1.98Sr2.06Y0.68Cu2O8, an insulating parent compound of the high-Tc Bi2212family of copper oxide superconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 10, 'K', 3]

Tc
###Signatures of pressure induced superconductivity in insulating Bi2212|T. Cuk,D. A. Zocco,H. Eisaki,V. Struzhkin,M. Grosche,M. B. Maple,Z. -X. Shen###
(597642, 597642)
 Resistance to higherpressures decreases Tc, giving a maximum of 10 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 10, 'K', 0]

CdCr2S4
###Colossal Electroresistance and Colossal Magnetoresistance in Spinel Multiferroic CdCr2S4|C. P. Sun,C. L. Huang,C. C. Lin,J. L. Her,C. J. Ho,J. -Y. Lin,H. Berger,H. D. Yang###
(597742, 597746)
Colossal Electroresistance and Colossal Magnetoresistance in Spinel Multiferroic CdCr2S4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Colossal Electroresistance and Colossal Magnetoresistance in Spinel Multiferroic CdCr2S4|C. P. Sun,C. L. Huang,C. C. Lin,J. L. Her,C. J. Ho,J. -Y. Lin,H. Berger,H. D. Yang###
(597754, 597754)
 Colossal magnetoresistance (CMR) and electroresistance (CER) induced by theelectric field in spinel multiferroic CdCr2S4 are reported.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Colossal Electroresistance and Colossal Magnetoresistance in Spinel Multiferroic CdCr2S4|C. P. Sun,C. L. Huang,C. C. Lin,J. L. Her,C. J. Ho,J. -Y. Lin,H. Berger,H. D. Yang###
(597764, 597764)
 Colossal magnetoresistance (CMR) and electroresistance (CER) induced by theelectric field in spinel multiferroic CdCr2S4 are reported.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CdCr2S4
###Colossal Electroresistance and Colossal Magnetoresistance in Spinel Multiferroic CdCr2S4|C. P. Sun,C. L. Huang,C. C. Lin,J. L. Her,C. J. Ho,J. -Y. Lin,H. Berger,H. D. Yang###
(597786, 597790)
 Colossal magnetoresistance (CMR) and electroresistance (CER) induced by theelectric field in spinel multiferroic CdCr2S4 are reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CdCr2S4
###Colossal Electroresistance and Colossal Magnetoresistance in Spinel Multiferroic CdCr2S4|C. P. Sun,C. L. Huang,C. C. Lin,J. L. Her,C. J. Ho,J. -Y. Lin,H. Berger,H. D. Yang###
(597822, 597826)
 It is found that ametal-insulator transition (MIT) in CdCr2S4 is triggered by the electricalfield.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Colossal Electroresistance and Colossal Magnetoresistance in Spinel Multiferroic CdCr2S4|C. P. Sun,C. L. Huang,C. C. Lin,J. L. Her,C. J. Ho,J. -Y. Lin,H. Berger,H. D. Yang###
(597842, 597842)
 In magnetic fields, the resistivity of CdCr2S4 responds similarly tothat of CMR manganites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CdCr2S4
###Colossal Electroresistance and Colossal Magnetoresistance in Spinel Multiferroic CdCr2S4|C. P. Sun,C. L. Huang,C. C. Lin,J. L. Her,C. J. Ho,J. -Y. Lin,H. Berger,H. D. Yang###
(597855, 597859)
 In magnetic fields, the resistivity of CdCr2S4 responds similarly tothat of CMR manganites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Colossal Electroresistance and Colossal Magnetoresistance in Spinel Multiferroic CdCr2S4|C. P. Sun,C. L. Huang,C. C. Lin,J. L. Her,C. J. Ho,J. -Y. Lin,H. Berger,H. D. Yang###
(597872, 597872)
 In magnetic fields, the resistivity of CdCr2S4 responds similarly tothat of CMR manganites.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CdCr2S4
###Colossal Electroresistance and Colossal Magnetoresistance in Spinel Multiferroic CdCr2S4|C. P. Sun,C. L. Huang,C. C. Lin,J. L. Her,C. J. Ho,J. -Y. Lin,H. Berger,H. D. Yang###
(597892, 597896)
 Combing previous reports, these findings make CdCr2S4the unique compound to possess all four properties of the colossalmagnetocapacitive (CM<missing VAR>C), colossal electrocapacitive (CE<missing VAR>C), CER, and CMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Colossal Electroresistance and Colossal Magnetoresistance in Spinel Multiferroic CdCr2S4|C. P. Sun,C. L. Huang,C. C. Lin,J. L. Her,C. J. Ho,J. -Y. Lin,H. Berger,H. D. Yang###
(597925, 597925)
 Combing previous reports, these findings make CdCr2S4the unique compound to possess all four properties of the colossalmagnetocapacitive (CM<missing VAR>C), colossal electrocapacitive (CE<missing VAR>C), CER, and CMR.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Colossal Electroresistance and Colossal Magnetoresistance in Spinel Multiferroic CdCr2S4|C. P. Sun,C. L. Huang,C. C. Lin,J. L. Her,C. J. Ho,J. -Y. Lin,H. Berger,H. D. Yang###
(597927, 597927)
 Combing previous reports, these findings make CdCr2S4the unique compound to possess all four properties of the colossalmagnetocapacitive (CM<missing VAR>C), colossal electrocapacitive (CE<missing VAR>C), CER, and CMR.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Colossal Electroresistance and Colossal Magnetoresistance in Spinel Multiferroic CdCr2S4|C. P. Sun,C. L. Huang,C. C. Lin,J. L. Her,C. J. Ho,J. -Y. Lin,H. Berger,H. D. Yang###
(597936, 597936)
 Combing previous reports, these findings make CdCr2S4the unique compound to possess all four properties of the colossalmagnetocapacitive (CM<missing VAR>C), colossal electrocapacitive (CE<missing VAR>C), CER, and CMR.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Colossal Electroresistance and Colossal Magnetoresistance in Spinel Multiferroic CdCr2S4|C. P. Sun,C. L. Huang,C. C. Lin,J. L. Her,C. J. Ho,J. -Y. Lin,H. Berger,H. D. Yang###
(597938, 597938)
 Combing previous reports, these findings make CdCr2S4the unique compound to possess all four properties of the colossalmagnetocapacitive (CM<missing VAR>C), colossal electrocapacitive (CE<missing VAR>C), CER, and CMR.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Colossal Electroresistance and Colossal Magnetoresistance in Spinel Multiferroic CdCr2S4|C. P. Sun,C. L. Huang,C. C. Lin,J. L. Her,C. J. Ho,J. -Y. Lin,H. Berger,H. D. Yang###
(597942, 597942)
 Combing previous reports, these findings make CdCr2S4the unique compound to possess all four properties of the colossalmagnetocapacitive (CM<missing VAR>C), colossal electrocapacitive (CE<missing VAR>C), CER, and CMR.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Colossal Electroresistance and Colossal Magnetoresistance in Spinel Multiferroic CdCr2S4|C. P. Sun,C. L. Huang,C. C. Lin,J. L. Her,C. J. Ho,J. -Y. Lin,H. Berger,H. D. Yang###
(597949, 597949)
 Combing previous reports, these findings make CdCr2S4the unique compound to possess all four properties of the colossalmagnetocapacitive (CM<missing VAR>C), colossal electrocapacitive (CE<missing VAR>C), CER, and CMR.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Colossal Electroresistance and Colossal Magnetoresistance in Spinel Multiferroic CdCr2S4|C. P. Sun,C. L. Huang,C. C. Lin,J. L. Her,C. J. Ho,J. -Y. Lin,H. Berger,H. D. Yang###
(597981, 597981)
 Thepresent results open a new venue for searching new materials to show CMR bytuning electric and magnetic fields.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Tunneling Spin Injection into Single Layer Graphene|Wei Han,K. Pi,K. M. McCreary,Yan Li,Jared J. I. Wong,A. G. Swartz,R. K. Kawakami###
(598495, 598495)
 We achieve tunneling spin injection from Co into single layer graphene (SLG)using TiO2 seeded MgO barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Tunneling Spin Injection into Single Layer Graphene|Wei Han,K. Pi,K. M. McCreary,Yan Li,Jared J. I. Wong,A. G. Swartz,R. K. Kawakami###
(598506, 598506)
 We achieve tunneling spin injection from Co into single layer graphene (SLG)using TiO2 seeded MgO barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TiO2
###Tunneling Spin Injection into Single Layer Graphene|Wei Han,K. Pi,K. M. McCreary,Yan Li,Jared J. I. Wong,A. G. Swartz,R. K. Kawakami###
(598514, 598516)
 We achieve tunneling spin injection from Co into single layer graphene (SLG)using TiO2 seeded MgO barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Tunneling Spin Injection into Single Layer Graphene|Wei Han,K. Pi,K. M. McCreary,Yan Li,Jared J. I. Wong,A. G. Swartz,R. K. Kawakami###
(598520, 598521)
 We achieve tunneling spin injection from Co into single layer graphene (SLG)using TiO2 seeded MgO barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Tunneling Spin Injection into Single Layer Graphene|Wei Han,K. Pi,K. M. McCreary,Yan Li,Jared J. I. Wong,A. G. Swartz,R. K. Kawakami###
(598589, 598589)
 SLG conductivity fromthe transparent to the tunneling contact regimes demonstrates the contrastingbehaviors predicted by the drift-diffusion theory of spin transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###Strong carrier-scattering in iron-pnictide superconductors with highest Tc obtained from charge transport experiments|S. Ishida,M. Nakajima,Y. Tomioka,T. Ito,K. Miyazawa,H. Kito,C. H. Lee,M. Ishikado,S. Shamoto,A. Iyo,H. Eisaki,K. M. Kojima,S. Uchida###
(598712, 598712)
Strong carrier-scattering in iron-pnictide superconductors with highest Tc obtained from charge transport experiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 28, 'K', 3],[198.0, 40, 'K', 4]

FeAsO1-y
###Strong carrier-scattering in iron-pnictide superconductors with highest Tc obtained from charge transport experiments|S. Ishida,M. Nakajima,Y. Tomioka,T. Ito,K. Miyazawa,H. Kito,C. H. Lee,M. Ishikado,S. Shamoto,A. Iyo,H. Eisaki,K. M. Kojima,S. Uchida###
(598753, 598758)
 Characteristic normal-state charge transport is found in the oxygen-deficientiron-arsenides LnFeAsO1-y (Ln La and Nd) with the highest Tcs<missing VAR> among knownFe-based superconductors.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[101.0, 28, 'K', 2],[152.0, 40, 'K', 3]

La
###Strong carrier-scattering in iron-pnictide superconductors with highest Tc obtained from charge transport experiments|S. Ishida,M. Nakajima,Y. Tomioka,T. Ito,K. Miyazawa,H. Kito,C. H. Lee,M. Ishikado,S. Shamoto,A. Iyo,H. Eisaki,K. M. Kojima,S. Uchida###
(598763, 598763)
 Characteristic normal-state charge transport is found in the oxygen-deficientiron-arsenides LnFeAsO1-y (Ln La and Nd) with the highest Tcs<missing VAR> among knownFe-based superconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 28, 'K', 2],[147.0, 40, 'K', 3]

Nd
###Strong carrier-scattering in iron-pnictide superconductors with highest Tc obtained from charge transport experiments|S. Ishida,M. Nakajima,Y. Tomioka,T. Ito,K. Miyazawa,H. Kito,C. H. Lee,M. Ishikado,S. Shamoto,A. Iyo,H. Eisaki,K. M. Kojima,S. Uchida###
(598767, 598767)
 Characteristic normal-state charge transport is found in the oxygen-deficientiron-arsenides LnFeAsO1-y (Ln La and Nd) with the highest Tcs<missing VAR> among knownFe-based superconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 28, 'K', 2],[143.0, 40, 'K', 3]

Tc
###Strong carrier-scattering in iron-pnictide superconductors with highest Tc obtained from charge transport experiments|S. Ishida,M. Nakajima,Y. Tomioka,T. Ito,K. Miyazawa,H. Kito,C. H. Lee,M. Ishikado,S. Shamoto,A. Iyo,H. Eisaki,K. M. Kojima,S. Uchida###
(598776, 598776)
 Characteristic normal-state charge transport is found in the oxygen-deficientiron-arsenides LnFeAsO1-y (Ln La and Nd) with the highest Tcs<missing VAR> among knownFe-based superconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 28, 'K', 2],[134.0, 40, 'K', 3]

Fe
###Strong carrier-scattering in iron-pnictide superconductors with highest Tc obtained from charge transport experiments|S. Ishida,M. Nakajima,Y. Tomioka,T. Ito,K. Miyazawa,H. Kito,C. H. Lee,M. Ishikado,S. Shamoto,A. Iyo,H. Eisaki,K. M. Kojima,S. Uchida###
(598784, 598784)
 Characteristic normal-state charge transport is found in the oxygen-deficientiron-arsenides LnFeAsO1-y (Ln La and Nd) with the highest Tcs<missing VAR> among knownFe-based superconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 28, 'K', 2],[126.0, 40, 'K', 3]

Tc
###Strong carrier-scattering in iron-pnictide superconductors with highest Tc obtained from charge transport experiments|S. Ishida,M. Nakajima,Y. Tomioka,T. Ito,K. Miyazawa,H. Kito,C. H. Lee,M. Ishikado,S. Shamoto,A. Iyo,H. Eisaki,K. M. Kojima,S. Uchida###
(598831, 598831)
 The effect of doping in this system is mainly onthe carrier scattering, quite distinct from that in high-Tc cuprates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 28, 'K', 1],[79.0, 40, 'K', 2]

In
###Strong carrier-scattering in iron-pnictide superconductors with highest Tc obtained from charge transport experiments|S. Ishida,M. Nakajima,Y. Tomioka,T. Ito,K. Miyazawa,H. Kito,C. H. Lee,M. Ishikado,S. Shamoto,A. Iyo,H. Eisaki,K. M. Kojima,S. Uchida###
(598836, 598836)
 In thesuperconducting regime of the La system with maximum Tc  28 K, thelow-temperature resistivity is dominated by a T<missing VAR>2 term.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 28, 'K', 0],[74.0, 40, 'K', 1]

La
###Strong carrier-scattering in iron-pnictide superconductors with highest Tc obtained from charge transport experiments|S. Ishida,M. Nakajima,Y. Tomioka,T. Ito,K. Miyazawa,H. Kito,C. H. Lee,M. Ishikado,S. Shamoto,A. Iyo,H. Eisaki,K. M. Kojima,S. Uchida###
(598849, 598849)
 In thesuperconducting regime of the La system with maximum Tc  28 K, thelow-temperature resistivity is dominated by a T<missing VAR>2 term.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 28, 'K', 0],[61.0, 40, 'K', 1]

Tc
###Strong carrier-scattering in iron-pnictide superconductors with highest Tc obtained from charge transport experiments|S. Ishida,M. Nakajima,Y. Tomioka,T. Ito,K. Miyazawa,H. Kito,C. H. Lee,M. Ishikado,S. Shamoto,A. Iyo,H. Eisaki,K. M. Kojima,S. Uchida###
(598857, 598857)
 In thesuperconducting regime of the La system with maximum Tc  28 K, thelow-temperature resistivity is dominated by a T<missing VAR>2 term.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 28, 'K', 0],[53.0, 40, 'K', 1]

Nd
###Strong carrier-scattering in iron-pnictide superconductors with highest Tc obtained from charge transport experiments|S. Ishida,M. Nakajima,Y. Tomioka,T. Ito,K. Miyazawa,H. Kito,C. H. Lee,M. Ishikado,S. Shamoto,A. Iyo,H. Eisaki,K. M. Kojima,S. Uchida###
(598899, 598899)
 On the other hand, inthe Nd system with Tc higher than 40 K, the carriers are subject to strongerscattering showing T<missing VAR>-linear resistivity and small magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 28, 'K', 1],[11.0, 40, 'K', 0]

Tc
###Strong carrier-scattering in iron-pnictide superconductors with highest Tc obtained from charge transport experiments|S. Ishida,M. Nakajima,Y. Tomioka,T. Ito,K. Miyazawa,H. Kito,C. H. Lee,M. Ishikado,S. Shamoto,A. Iyo,H. Eisaki,K. M. Kojima,S. Uchida###
(598905, 598905)
 On the other hand, inthe Nd system with Tc higher than 40 K, the carriers are subject to strongerscattering showing T<missing VAR>-linear resistivity and small magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 28, 'K', 1],[5.0, 40, 'K', 0]

Tc
###Strong carrier-scattering in iron-pnictide superconductors with highest Tc obtained from charge transport experiments|S. Ishida,M. Nakajima,Y. Tomioka,T. Ito,K. Miyazawa,H. Kito,C. H. Lee,M. Ishikado,S. Shamoto,A. Iyo,H. Eisaki,K. M. Kojima,S. Uchida###
(598958, 598958)
 Suchstrong scattering appears crucial for high-Tc superconductivity in theiron-based system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 28, 'K', 2],[48.0, 40, 'K', 1]

Ru
###Comment on "Isoelectronic Ru substitution at Fe-site in Sm(Fe$_{1-x}$Ru$_x$)AsO$_{0.85}$F$_{0.15}$ compound and its effects on structural, superconducting and normal state properties" (arXiv:1004.1978)|Hiroshi Kontani,Masatoshi Sato###
(598988, 598988)
Comment on Isoelectronic Ru substitution at Fe-site in Sm(Fe1-xRux)AsO0.85F0.15 compound and its effects on structural, superconducting and normal state properties (arXiv1004.1978).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 0, ',', 2],[148.0, 0.05, '<', 3],[155.0, 0.84, '>', 3],[162.0, 0, '>', 3],[181.0, 1.5, 'to', 3],[183.0, 2.9, ',', 3]

Fe
###Comment on "Isoelectronic Ru substitution at Fe-site in Sm(Fe$_{1-x}$Ru$_x$)AsO$_{0.85}$F$_{0.15}$ compound and its effects on structural, superconducting and normal state properties" (arXiv:1004.1978)|Hiroshi Kontani,Masatoshi Sato###
(598994, 598994)
Comment on Isoelectronic Ru substitution at Fe-site in Sm(Fe1-xRux)AsO0.85F0.15 compound and its effects on structural, superconducting and normal state properties (arXiv1004.1978).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 0, ',', 2],[142.0, 0.05, '<', 3],[149.0, 0.84, '>', 3],[156.0, 0, '>', 3],[175.0, 1.5, 'to', 3],[177.0, 2.9, ',', 3]

Sm
###Comment on "Isoelectronic Ru substitution at Fe-site in Sm(Fe$_{1-x}$Ru$_x$)AsO$_{0.85}$F$_{0.15}$ compound and its effects on structural, superconducting and normal state properties" (arXiv:1004.1978)|Hiroshi Kontani,Masatoshi Sato###
(599000, 599000)
Comment on Isoelectronic Ru substitution at Fe-site in Sm(Fe1-xRux)AsO0.85F0.15 compound and its effects on structural, superconducting and normal state properties (arXiv1004.1978).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 0, ',', 2],[136.0, 0.05, '<', 3],[143.0, 0.84, '>', 3],[150.0, 0, '>', 3],[169.0, 1.5, 'to', 3],[171.0, 2.9, ',', 3]

Fe1-xRu
###Comment on "Isoelectronic Ru substitution at Fe-site in Sm(Fe$_{1-x}$Ru$_x$)AsO$_{0.85}$F$_{0.15}$ compound and its effects on structural, superconducting and normal state properties" (arXiv:1004.1978)|Hiroshi Kontani,Masatoshi Sato###
(599002, 599006)
Comment on Isoelectronic Ru substitution at Fe-site in Sm(Fe1-xRux)AsO0.85F0.15 compound and its effects on structural, superconducting and normal state properties (arXiv1004.1978).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[108.0, 0, ',', 2],[130.0, 0.05, '<', 3],[137.0, 0.84, '>', 3],[144.0, 0, '>', 3],[163.0, 1.5, 'to', 3],[165.0, 2.9, ',', 3]

AsO0.85F0.15
###Comment on "Isoelectronic Ru substitution at Fe-site in Sm(Fe$_{1-x}$Ru$_x$)AsO$_{0.85}$F$_{0.15}$ compound and its effects on structural, superconducting and normal state properties" (arXiv:1004.1978)|Hiroshi Kontani,Masatoshi Sato###
(599009, 599013)
Comment on Isoelectronic Ru substitution at Fe-site in Sm(Fe1-xRux)AsO0.85F0.15 compound and its effects on structural, superconducting and normal state properties (arXiv1004.1978).
Featurization terminated normally.
0,0,0,0,0,0,0,0.425,0.075,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 0, ',', 2],[123.0, 0.05, '<', 3],[130.0, 0.84, '>', 3],[137.0, 0, '>', 3],[156.0, 1.5, 'to', 3],[158.0, 2.9, ',', 3]

Sm
###Comment on "Isoelectronic Ru substitution at Fe-site in Sm(Fe$_{1-x}$Ru$_x$)AsO$_{0.85}$F$_{0.15}$ compound and its effects on structural, superconducting and normal state properties" (arXiv:1004.1978)|Hiroshi Kontani,Masatoshi Sato###
(599086, 599086)
 Based on the five-orbital model, we derive the reduced impurity scatteringrate gzgamma/2pi Tc0 in Sm(Fe1-xRux)AsO0.85F0.15from the residual resistivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 0, ',', 1],[50.0, 0.05, '<', 2],[57.0, 0.84, '>', 2],[64.0, 0, '>', 2],[83.0, 1.5, 'to', 2],[85.0, 2.9, ',', 2]

Fe1-xRu
###Comment on "Isoelectronic Ru substitution at Fe-site in Sm(Fe$_{1-x}$Ru$_x$)AsO$_{0.85}$F$_{0.15}$ compound and its effects on structural, superconducting and normal state properties" (arXiv:1004.1978)|Hiroshi Kontani,Masatoshi Sato###
(599088, 599092)
 Based on the five-orbital model, we derive the reduced impurity scatteringrate gzgamma/2pi Tc0 in Sm(Fe1-xRux)AsO0.85F0.15from the residual resistivity.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[22.0, 0, ',', 1],[44.0, 0.05, '<', 2],[51.0, 0.84, '>', 2],[58.0, 0, '>', 2],[77.0, 1.5, 'to', 2],[79.0, 2.9, ',', 2]

AsO0.85F0.15
###Comment on "Isoelectronic Ru substitution at Fe-site in Sm(Fe$_{1-x}$Ru$_x$)AsO$_{0.85}$F$_{0.15}$ compound and its effects on structural, superconducting and normal state properties" (arXiv:1004.1978)|Hiroshi Kontani,Masatoshi Sato###
(599095, 599099)
 Based on the five-orbital model, we derive the reduced impurity scatteringrate gzgamma/2pi Tc0 in Sm(Fe1-xRux)AsO0.85F0.15from the residual resistivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0.425,0.075,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 0, ',', 1],[37.0, 0.05, '<', 2],[44.0, 0.84, '>', 2],[51.0, 0, '>', 2],[70.0, 1.5, 'to', 2],[72.0, 2.9, ',', 2]

At
###Comment on "Isoelectronic Ru substitution at Fe-site in Sm(Fe$_{1-x}$Ru$_x$)AsO$_{0.85}$F$_{0.15}$ compound and its effects on structural, superconducting and normal state properties" (arXiv:1004.1978)|Hiroshi Kontani,Masatoshi Sato###
(599111, 599111)
 At x<missing VAR>0, the transition temperature isTc050 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 0, ',', 0],[25.0, 0.05, '<', 1],[32.0, 0.84, '>', 1],[39.0, 0, '>', 1],[58.0, 1.5, 'to', 1],[60.0, 2.9, ',', 1]

K
###Comment on "Isoelectronic Ru substitution at Fe-site in Sm(Fe$_{1-x}$Ru$_x$)AsO$_{0.85}$F$_{0.15}$ compound and its effects on structural, superconducting and normal state properties" (arXiv:1004.1978)|Hiroshi Kontani,Masatoshi Sato###
(599131, 599131)
 At x<missing VAR>0, the transition temperature isTc050 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 0, ',', 0],[5.0, 0.05, '<', 1],[12.0, 0.84, '>', 1],[19.0, 0, '>', 1],[38.0, 1.5, 'to', 1],[40.0, 2.9, ',', 1]

Co1.67Si3
###Metastable magnetization behavior in magnetocaloric R6Co1.67Si3 (R=Tb and Nd) compounds|Arabinda Haldar,Niraj K. Singh,K. G. Suresh,A. K. Nigam###
(599251, 599254)
Metastable magnetization behavior in magnetocaloric R<missing VAR>6Co1.67Si3 (R<missing VAR>Tb and Nd) compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.6423982869379015,0,0,0,0,0,0,0,0,0,0,0,0,0.3576017130620985,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tb
###Metastable magnetization behavior in magnetocaloric R6Co1.67Si3 (R=Tb and Nd) compounds|Arabinda Haldar,Niraj K. Singh,K. G. Suresh,A. K. Nigam###
(599258, 599258)
Metastable magnetization behavior in magnetocaloric R<missing VAR>6Co1.67Si3 (R<missing VAR>Tb and Nd) compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nd
###Metastable magnetization behavior in magnetocaloric R6Co1.67Si3 (R=Tb and Nd) compounds|Arabinda Haldar,Niraj K. Singh,K. G. Suresh,A. K. Nigam###
(599262, 599262)
Metastable magnetization behavior in magnetocaloric R<missing VAR>6Co1.67Si3 (R<missing VAR>Tb and Nd) compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co1.67Si3
###Metastable magnetization behavior in magnetocaloric R6Co1.67Si3 (R=Tb and Nd) compounds|Arabinda Haldar,Niraj K. Singh,K. G. Suresh,A. K. Nigam###
(599301, 599304)
 Magnetic field and time induced steps have been observed in the recentlydiscovered ternary silicide R<missing VAR>6Co1.67Si3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.6423982869379015,0,0,0,0,0,0,0,0,0,0,0,0,0.3576017130620985,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(VO2)
###Hall carrier density and magnetoresistance measurements in thin film vanadium dioxide across the metal-insulator transition|Dmitry Ruzmetov,Don Heiman,Bruce B. Claflin,Venkatesh Narayanamurti,Shriram Ramanathan###
(599563, 599567)
 Temperature dependent magneto-transport measurements in magnetic fields of upto 12 Tesla were performed on thin film vanadium dioxide (VO2) across themetal-insulator transition (MIT).
Featurization successful!
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 12, 'Tesla', 0]

V
###Hall carrier density and magnetoresistance measurements in thin film vanadium dioxide across the metal-insulator transition|Dmitry Ruzmetov,Don Heiman,Bruce B. Claflin,Venkatesh Narayanamurti,Shriram Ramanathan###
(599664, 599664)
 The Hall mobility varies little across the MIT and remains low,0.1cm2/V sec.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 12, 'Tesla', 2]

I3
###Observation and Simulation of All Angular Magnetoresistance Oscillation Effects in the Quasi-One Dimensional Organic Conductor (DMET)2I3|Pashupati Dhakal,Harukazu Yoshino,Jeong Il Oh,Koichi Kikuchi,Michael J. Naughton###
(600042, 600043)
Observation and Simulation of All Angular Magnetoresistance Oscillation Effects in the Quasi-One Dimensional Organic Conductor (DMET)2I3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I3
###Observation and Simulation of All Angular Magnetoresistance Oscillation Effects in the Quasi-One Dimensional Organic Conductor (DMET)2I3|Pashupati Dhakal,Harukazu Yoshino,Jeong Il Oh,Koichi Kikuchi,Michael J. Naughton###
(600074, 600075)
 Measurements and calculations of magnetotransport in the molecular organicconductor (DMET)2I3 detect and simulate all known angular magnetoresistanceoscillation (AMRO) phenomena for quasi-one dimensional (Q1D) systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Observation and Simulation of All Angular Magnetoresistance Oscillation Effects in the Quasi-One Dimensional Organic Conductor (DMET)2I3|Pashupati Dhakal,Harukazu Yoshino,Jeong Il Oh,Koichi Kikuchi,Michael J. Naughton###
(600098, 600098)
 Measurements and calculations of magnetotransport in the molecular organicconductor (DMET)2I3 detect and simulate all known angular magnetoresistanceoscillation (AMRO) phenomena for quasi-one dimensional (Q1D) systems.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Observation and Simulation of All Angular Magnetoresistance Oscillation Effects in the Quasi-One Dimensional Organic Conductor (DMET)2I3|Pashupati Dhakal,Harukazu Yoshino,Jeong Il Oh,Koichi Kikuchi,Michael J. Naughton###
(600168, 600168)
 Employingthe true triclinic crystal structure in the calculations, these results addressthe mystery of the putative vanishing of the primary AMRO phenomenon, the Lebedmagic angle effect, for orientations in which it was expected to be strongest.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Observation and Simulation of All Angular Magnetoresistance Oscillation Effects in the Quasi-One Dimensional Organic Conductor (DMET)2I3|Pashupati Dhakal,Harukazu Yoshino,Jeong Il Oh,Koichi Kikuchi,Michael J. Naughton###
(600230, 600230)
They also show a common origin for Lebed and so-called L<missing VAR>N oscillations, andconfirm the generalized nature of AMRO in Q1D systems.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Observation and Simulation of All Angular Magnetoresistance Oscillation Effects in the Quasi-One Dimensional Organic Conductor (DMET)2I3|Pashupati Dhakal,Harukazu Yoshino,Jeong Il Oh,Koichi Kikuchi,Michael J. Naughton###
(600251, 600251)
They also show a common origin for Lebed and so-called L<missing VAR>N oscillations, andconfirm the generalized nature of AMRO in Q1D systems.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Strongly suppressed 1/f noise and enhanced magnetoresistance in epitaxial Fe-V/MgO/Fe magnetic tunnel junctions|D. Herranz,F. Bonell,A. Gomez-Ibarlucea,S. Andrieu,F. Montaigne,R. Villar1,C. Tiusan,F. G. Aliev###
(600290, 600290)
Strongly suppressed 1/f<missing VAR> noise and enhanced magnetoresistance in epitaxial Fe-V/MgO/Fe magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[172.0, 0.25, 'reveals', 2],[202.0, 2, 'orders', 2]

V/MgO/Fe
###Strongly suppressed 1/f noise and enhanced magnetoresistance in epitaxial Fe-V/MgO/Fe magnetic tunnel junctions|D. Herranz,F. Bonell,A. Gomez-Ibarlucea,S. Andrieu,F. Montaigne,R. Villar1,C. Tiusan,F. G. Aliev###
(600292, 600297)
Strongly suppressed 1/f<missing VAR> noise and enhanced magnetoresistance in epitaxial Fe-V/MgO/Fe magnetic tunnel junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[165.0, 0.25, 'reveals', 2],[195.0, 2, 'orders', 2]

Fe
###Strongly suppressed 1/f noise and enhanced magnetoresistance in epitaxial Fe-V/MgO/Fe magnetic tunnel junctions|D. Herranz,F. Bonell,A. Gomez-Ibarlucea,S. Andrieu,F. Montaigne,R. Villar1,C. Tiusan,F. G. Aliev###
(600308, 600308)
 Alloying Fe electrodes with V, through reduced FeV/MgO interface mismatch inepitaxial magnetic tunnel junctions with MgO barriers, notably suppresses bothnonmagnetic (parallel) and magnetic (antiparallel) state 1/f<missing VAR> noise and enhancestunnelling magnetoresistance (TMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 0.25, 'reveals', 1],[184.0, 2, 'orders', 1]

V
###Strongly suppressed 1/f noise and enhanced magnetoresistance in epitaxial Fe-V/MgO/Fe magnetic tunnel junctions|D. Herranz,F. Bonell,A. Gomez-Ibarlucea,S. Andrieu,F. Montaigne,R. Villar1,C. Tiusan,F. G. Aliev###
(600314, 600314)
 Alloying Fe electrodes with V, through reduced FeV/MgO interface mismatch inepitaxial magnetic tunnel junctions with MgO barriers, notably suppresses bothnonmagnetic (parallel) and magnetic (antiparallel) state 1/f<missing VAR> noise and enhancestunnelling magnetoresistance (TMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 0.25, 'reveals', 1],[178.0, 2, 'orders', 1]

FeV/MgO
###Strongly suppressed 1/f noise and enhanced magnetoresistance in epitaxial Fe-V/MgO/Fe magnetic tunnel junctions|D. Herranz,F. Bonell,A. Gomez-Ibarlucea,S. Andrieu,F. Montaigne,R. Villar1,C. Tiusan,F. G. Aliev###
(600321, 600325)
 Alloying Fe electrodes with V, through reduced FeV/MgO interface mismatch inepitaxial magnetic tunnel junctions with MgO barriers, notably suppresses bothnonmagnetic (parallel) and magnetic (antiparallel) state 1/f<missing VAR> noise and enhancestunnelling magnetoresistance (TMR).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[137.0, 0.25, 'reveals', 1],[167.0, 2, 'orders', 1]

MgO
###Strongly suppressed 1/f noise and enhanced magnetoresistance in epitaxial Fe-V/MgO/Fe magnetic tunnel junctions|D. Herranz,F. Bonell,A. Gomez-Ibarlucea,S. Andrieu,F. Montaigne,R. Villar1,C. Tiusan,F. G. Aliev###
(600344, 600345)
 Alloying Fe electrodes with V, through reduced FeV/MgO interface mismatch inepitaxial magnetic tunnel junctions with MgO barriers, notably suppresses bothnonmagnetic (parallel) and magnetic (antiparallel) state 1/f<missing VAR> noise and enhancestunnelling magnetoresistance (TMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 0.25, 'reveals', 1],[147.0, 2, 'orders', 1]

Fe1-x
###Strongly suppressed 1/f noise and enhanced magnetoresistance in epitaxial Fe-V/MgO/Fe magnetic tunnel junctions|D. Herranz,F. Bonell,A. Gomez-Ibarlucea,S. Andrieu,F. Montaigne,R. Villar1,C. Tiusan,F. G. Aliev###
(600424, 600427)
 A comparative study of the room temperatureelectron transport and low frequency noise in Fe1-xVx/MgO/Fe and Fe/MgO/Fe1-xVxMTJs with 0 < x<missing VAR> < 0.25 reveals that V doping of the bottom electrode for x<missing VAR> <0.1 reduces in nearly 2 orders of magnitude the normalized nonmagnetic andmagnetic 1/f<missing VAR> noise.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[35.0, 0.25, 'reveals', 0],[65.0, 2, 'orders', 0]

MgO/Fe
###Strongly suppressed 1/f noise and enhanced magnetoresistance in epitaxial Fe-V/MgO/Fe magnetic tunnel junctions|D. Herranz,F. Bonell,A. Gomez-Ibarlucea,S. Andrieu,F. Montaigne,R. Villar1,C. Tiusan,F. G. Aliev###
(600430, 600433)
 A comparative study of the room temperatureelectron transport and low frequency noise in Fe1-xVx/MgO/Fe and Fe/MgO/Fe1-xVxMTJs with 0 < x<missing VAR> < 0.25 reveals that V doping of the bottom electrode for x<missing VAR> <0.1 reduces in nearly 2 orders of magnitude the normalized nonmagnetic andmagnetic 1/f<missing VAR> noise.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[29.0, 0.25, 'reveals', 0],[59.0, 2, 'orders', 0]

Fe/MgO/Fe1-x
###Strongly suppressed 1/f noise and enhanced magnetoresistance in epitaxial Fe-V/MgO/Fe magnetic tunnel junctions|D. Herranz,F. Bonell,A. Gomez-Ibarlucea,S. Andrieu,F. Montaigne,R. Villar1,C. Tiusan,F. G. Aliev###
(600437, 600445)
 A comparative study of the room temperatureelectron transport and low frequency noise in Fe1-xVx/MgO/Fe and Fe/MgO/Fe1-xVxMTJs with 0 < x<missing VAR> < 0.25 reveals that V doping of the bottom electrode for x<missing VAR> <0.1 reduces in nearly 2 orders of magnitude the normalized nonmagnetic andmagnetic 1/f<missing VAR> noise.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[17.0, 0.25, 'reveals', 0],[47.0, 2, 'orders', 0]

Co
###Tunneling Spin Injection into Single Layer Graphene (Supplementary Information)|Wei Han,K. Pi,K. M. McCreary,Yan Li,Jared J. I. Wong,A. G. Swartz,R. K. Kawakami###
(600595, 600595)
 We achieve tunneling spin injection from Co into single layer graphene (SLG)using TiO2 seeded MgO barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Tunneling Spin Injection into Single Layer Graphene (Supplementary Information)|Wei Han,K. Pi,K. M. McCreary,Yan Li,Jared J. I. Wong,A. G. Swartz,R. K. Kawakami###
(600606, 600606)
 We achieve tunneling spin injection from Co into single layer graphene (SLG)using TiO2 seeded MgO barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TiO2
###Tunneling Spin Injection into Single Layer Graphene (Supplementary Information)|Wei Han,K. Pi,K. M. McCreary,Yan Li,Jared J. I. Wong,A. G. Swartz,R. K. Kawakami###
(600614, 600616)
 We achieve tunneling spin injection from Co into single layer graphene (SLG)using TiO2 seeded MgO barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Tunneling Spin Injection into Single Layer Graphene (Supplementary Information)|Wei Han,K. Pi,K. M. McCreary,Yan Li,Jared J. I. Wong,A. G. Swartz,R. K. Kawakami###
(600620, 600621)
 We achieve tunneling spin injection from Co into single layer graphene (SLG)using TiO2 seeded MgO barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Tunneling Spin Injection into Single Layer Graphene (Supplementary Information)|Wei Han,K. Pi,K. M. McCreary,Yan Li,Jared J. I. Wong,A. G. Swartz,R. K. Kawakami###
(600689, 600689)
 SLG conductivity fromthe transparent to the tunneling contact regimes demonstrates the contrastingbehaviors predicted by the drift-diffusion theory of spin transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nd2-xCe
###Magnetic Breakdown in the electron-doped cuprate superconductor Nd$_{2-x}$Ce$_x$CuO$_4$: the reconstructed Fermi surface survives in the strongly overdoped regime|T. Helm,M. V. Kartsovnik,I. Sheikin,M. Bartkowiak,F. Wolff-Fabris,N. Bittner,W. Biberacher,M. Lambacher,A. Erb,J. Wosnitza,R. Gross###
(600810, 600814)
Magnetic Breakdown in the electron-doped cuprate superconductor Nd2-xCex<missing VAR>CuO4 the reconstructed Fermi surface survives in the strongly overdoped regime.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

CuO4
###Magnetic Breakdown in the electron-doped cuprate superconductor Nd$_{2-x}$Ce$_x$CuO$_4$: the reconstructed Fermi surface survives in the strongly overdoped regime|T. Helm,M. V. Kartsovnik,I. Sheikin,M. Bartkowiak,F. Wolff-Fabris,N. Bittner,W. Biberacher,M. Lambacher,A. Erb,J. Wosnitza,R. Gross###
(600816, 600818)
Magnetic Breakdown in the electron-doped cuprate superconductor Nd2-xCex<missing VAR>CuO4 the reconstructed Fermi surface survives in the strongly overdoped regime.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Magnetic Breakdown in the electron-doped cuprate superconductor Nd$_{2-x}$Ce$_x$CuO$_4$: the reconstructed Fermi surface survives in the strongly overdoped regime|T. Helm,M. V. Kartsovnik,I. Sheikin,M. Bartkowiak,F. Wolff-Fabris,N. Bittner,W. Biberacher,M. Lambacher,A. Erb,J. Wosnitza,R. Gross###
(600862, 600862)
 We report on semiclassical angle-dependent magnetoresistance oscillations(AMRO) and the Shubnikov-de Haas effect in the electron-overdoped cupratesuperconductor Nd2-xCex<missing VAR>CuO4.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nd2-xCe
###Magnetic Breakdown in the electron-doped cuprate superconductor Nd$_{2-x}$Ce$_x$CuO$_4$: the reconstructed Fermi surface survives in the strongly overdoped regime|T. Helm,M. V. Kartsovnik,I. Sheikin,M. Bartkowiak,F. Wolff-Fabris,N. Bittner,W. Biberacher,M. Lambacher,A. Erb,J. Wosnitza,R. Gross###
(600890, 600894)
 We report on semiclassical angle-dependent magnetoresistance oscillations(AMRO) and the Shubnikov-de Haas effect in the electron-overdoped cupratesuperconductor Nd2-xCex<missing VAR>CuO4.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

CuO4
###Magnetic Breakdown in the electron-doped cuprate superconductor Nd$_{2-x}$Ce$_x$CuO$_4$: the reconstructed Fermi surface survives in the strongly overdoped regime|T. Helm,M. V. Kartsovnik,I. Sheikin,M. Bartkowiak,F. Wolff-Fabris,N. Bittner,W. Biberacher,M. Lambacher,A. Erb,J. Wosnitza,R. Gross###
(600896, 600898)
 We report on semiclassical angle-dependent magnetoresistance oscillations(AMRO) and the Shubnikov-de Haas effect in the electron-overdoped cupratesuperconductor Nd2-xCex<missing VAR>CuO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Unification Theory of Angular Magnetoresistance Oscillations in Quasi-One-Dimensional Conductors|Si Wu,A. G. Lebed###
(601150, 601150)
 In two limiting cases, our general solution reduces to the results,previously obtained for the Lebed Magic Angles and Lee-Naughton-Lebedoscillations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Unification Theory of Angular Magnetoresistance Oscillations in Quasi-One-Dimensional Conductors|Si Wu,A. G. Lebed###
(601248, 601248)
 We demonstrate that our theoretical results are in goodqualitative and quantitative agreement with the existing measurements ofresistivity in (TMTSF)2ClO4 conductor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ClO4
###Unification Theory of Angular Magnetoresistance Oscillations in Quasi-One-Dimensional Conductors|Si Wu,A. G. Lebed###
(601251, 601253)
 We demonstrate that our theoretical results are in goodqualitative and quantitative agreement with the existing measurements ofresistivity in (TMTSF)2ClO4 conductor.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi1-xSb
###Additional Evidence for the Surface Origin of the Peculiar Angular-Dependent Magnetoresistance Oscillations Discovered in a Topological Insulator Bi_{1-x}Sb_{x}|A. A. Taskin,Kouji Segawa,Yoichi Ando###
(601588, 601592)
Additional Evidence for the Surface Origin of the Peculiar Angular-Dependent Magnetoresistance Oscillations Discovered in a Topological Insulator Bi1-xSbx<missing VAR>.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

Bi0.91Sb0.09
###Additional Evidence for the Surface Origin of the Peculiar Angular-Dependent Magnetoresistance Oscillations Discovered in a Topological Insulator Bi_{1-x}Sb_{x}|A. A. Taskin,Kouji Segawa,Yoichi Ando###
(601634, 601637)
 We present detailed data on the unusual angular-dependent magnetoresistanceoscillation phenomenon recently discovered in a topological insulatorBi0.91Sb0.09.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.09,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.91,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrRuO3/BaTiO3/SrRuO3
###Large bias-dependent magnetoresistance in all-oxide magnetic tunnel junctions with a ferroelectric barrier|Nuala M. Caffrey,Thomas Archer,Ivan Rungger,Stefano Sanvito###
(602130, 602143)
 We investigate, by first-principles densityfunctional theory, the bias-dependent transport properties of an all-oxideSrRuO3/BaTiO3/SrRuO3 MTJ.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

BaTiO3
###Large bias-dependent magnetoresistance in all-oxide magnetic tunnel junctions with a ferroelectric barrier|Nuala M. Caffrey,Thomas Archer,Ivan Rungger,Stefano Sanvito###
(602156, 602159)
 This incorporates a BaTiO3 barrier which can be foundeither in a non-ferroic or in a ferroelectric state.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Large bias-dependent magnetoresistance in all-oxide magnetic tunnel junctions with a ferroelectric barrier|Nuala M. Caffrey,Thomas Archer,Ivan Rungger,Stefano Sanvito###
(602193, 602193)
 In such an MTJ not onlycan the tunneling magnetoresistance reach enormous values, but also, forcertain voltages, its sign can be changed by altering the barrier electricstate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V2O7
###Single-ion anisotropy, Dzyaloshinskii-Moriya interaction and negative magnetoresistance of the spin-1/2 pyrochlores R2V2O7|H. J. Xiang,E. J. Kan,M. -H. Whangbo,C. Lee,Su-Huai Wei,X. G. Gong###
(602331, 602334)
Single-ion anisotropy, Dzyaloshinskii-Moriya interaction and negative magnetoresistance of the spin-1/2 pyrochlores R<missing VAR>2V2O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0.7777777777777778,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[191.0, 0.32, 'vs', 4]

V2O7
###Single-ion anisotropy, Dzyaloshinskii-Moriya interaction and negative magnetoresistance of the spin-1/2 pyrochlores R2V2O7|H. J. Xiang,E. J. Kan,M. -H. Whangbo,C. Lee,Su-Huai Wei,X. G. Gong###
(602359, 602362)
 The electronic and magnetic properties of spin-1/2 pyrochlores R<missing VAR>2V2O7 wereinvestigated on the basis of density-functional calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0.7777777777777778,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 0.32, 'vs', 3]

V4
###Single-ion anisotropy, Dzyaloshinskii-Moriya interaction and negative magnetoresistance of the spin-1/2 pyrochlores R2V2O7|H. J. Xiang,E. J. Kan,M. -H. Whangbo,C. Lee,Su-Huai Wei,X. G. Gong###
(602404, 602405)
 Contrary to thecommon belief, the spin-1/2 V4 ions are found to have a substantial easy-axissingle-ion anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 0.32, 'vs', 2]

Lu2V2O7
###Single-ion anisotropy, Dzyaloshinskii-Moriya interaction and negative magnetoresistance of the spin-1/2 pyrochlores R2V2O7|H. J. Xiang,E. J. Kan,M. -H. Whangbo,C. Lee,Su-Huai Wei,X. G. Gong###
(602458, 602463)
 The D/J ratio deduced from the magnon quantum Halleffect of Lu2V2O7, where J<missing VAR> is the nearest-neighbor spin exchange and D<missing VAR> is theDzyaloshinskii-Moriya parameter, is much greater than the value estimated fromour calculations (i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6363636363636364,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 0.32, 'vs', 1]

V4
###Single-ion anisotropy, Dzyaloshinskii-Moriya interaction and negative magnetoresistance of the spin-1/2 pyrochlores R2V2O7|H. J. Xiang,E. J. Kan,M. -H. Whangbo,C. Lee,Su-Huai Wei,X. G. Gong###
(602567, 602568)
 We show that this discrepancy is due tothe neglect of the single-ion anisotropy of the V4 ions, and the negativemagnetoresistance observed for R<missing VAR>2V2O7 arises from a new mechanism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 0.32, 'vs', 2]

V2O7
###Single-ion anisotropy, Dzyaloshinskii-Moriya interaction and negative magnetoresistance of the spin-1/2 pyrochlores R2V2O7|H. J. Xiang,E. J. Kan,M. -H. Whangbo,C. Lee,Su-Huai Wei,X. G. Gong###
(602588, 602591)
 We show that this discrepancy is due tothe neglect of the single-ion anisotropy of the V4 ions, and the negativemagnetoresistance observed for R<missing VAR>2V2O7 arises from a new mechanism.
Featurization terminated normally.
0,0,0,0,0,0,0,0.7777777777777778,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 0.32, 'vs', 2]

KFe2As2
###Quasi-Two-Dimensional Fermi Surfaces and Coherent Interlayer Transport in KFe$_2$As$_2$|M. Kimata,T. Terashima,N. Kurita,H. Satsukawa,A. Harada,K. Kodama,A. Sato,M. Imai,K. Kihou,C. H. Lee,H. Kito,H. Eisaki,A. Iyo,T. Saito,H. Fukazawa,Y. Kohori,H. Harima,S. Uji###
(603095, 603099)
Quasi-Two-Dimensional Fermi Surfaces and Coherent Interlayer Transport in KFe2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 3.7, 'K', 1],[142.0, 12, '%', 2],[147.0, 17, '%', 2],[235.0, 3, 'd', 4]

Os
###Quasi-Two-Dimensional Fermi Surfaces and Coherent Interlayer Transport in KFe$_2$As$_2$|M. Kimata,T. Terashima,N. Kurita,H. Satsukawa,A. Harada,K. Kodama,A. Sato,M. Imai,K. Kihou,C. H. Lee,H. Kito,H. Eisaki,A. Iyo,T. Saito,H. Fukazawa,Y. Kohori,H. Harima,S. Uji###
(603127, 603127)
 We report the results of the angular-dependent magnetoresistance oscillations(AMROs), which can determine the shape of bulk Fermi surfaces inquasi-two-dimensional (Q2D) systems, in a highly hole-doped Fe-basedsuperconductor KFe2As2 with Tc approx 3.7 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 3.7, 'K', 0],[114.0, 12, '%', 1],[119.0, 17, '%', 1],[207.0, 3, 'd', 3]

Fe
###Quasi-Two-Dimensional Fermi Surfaces and Coherent Interlayer Transport in KFe$_2$As$_2$|M. Kimata,T. Terashima,N. Kurita,H. Satsukawa,A. Harada,K. Kodama,A. Sato,M. Imai,K. Kihou,C. H. Lee,H. Kito,H. Eisaki,A. Iyo,T. Saito,H. Fukazawa,Y. Kohori,H. Harima,S. Uji###
(603177, 603177)
 We report the results of the angular-dependent magnetoresistance oscillations(AMROs), which can determine the shape of bulk Fermi surfaces inquasi-two-dimensional (Q2D) systems, in a highly hole-doped Fe-basedsuperconductor KFe2As2 with Tc approx 3.7 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 3.7, 'K', 0],[64.0, 12, '%', 1],[69.0, 17, '%', 1],[157.0, 3, 'd', 3]

KFe2As2
###Quasi-Two-Dimensional Fermi Surfaces and Coherent Interlayer Transport in KFe$_2$As$_2$|M. Kimata,T. Terashima,N. Kurita,H. Satsukawa,A. Harada,K. Kodama,A. Sato,M. Imai,K. Kihou,C. H. Lee,H. Kito,H. Eisaki,A. Iyo,T. Saito,H. Fukazawa,Y. Kohori,H. Harima,S. Uji###
(603184, 603188)
 We report the results of the angular-dependent magnetoresistance oscillations(AMROs), which can determine the shape of bulk Fermi surfaces inquasi-two-dimensional (Q2D) systems, in a highly hole-doped Fe-basedsuperconductor KFe2As2 with Tc approx 3.7 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 3.7, 'K', 0],[53.0, 12, '%', 1],[58.0, 17, '%', 1],[146.0, 3, 'd', 3]

Os
###Quasi-Two-Dimensional Fermi Surfaces and Coherent Interlayer Transport in KFe$_2$As$_2$|M. Kimata,T. Terashima,N. Kurita,H. Satsukawa,A. Harada,K. Kodama,A. Sato,M. Imai,K. Kihou,C. H. Lee,H. Kito,H. Eisaki,A. Iyo,T. Saito,H. Fukazawa,Y. Kohori,H. Harima,S. Uji###
(603206, 603206)
 From the AMROs, wedetermined the two Q2D FSs with rounded-square cross sections, corresponding to12% and 17% of the first Brillouin zone.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 3.7, 'K', 1],[35.0, 12, '%', 0],[40.0, 17, '%', 0],[128.0, 3, 'd', 2]

F
###Quasi-Two-Dimensional Fermi Surfaces and Coherent Interlayer Transport in KFe$_2$As$_2$|M. Kimata,T. Terashima,N. Kurita,H. Satsukawa,A. Harada,K. Kodama,A. Sato,M. Imai,K. Kihou,C. H. Lee,H. Kito,H. Eisaki,A. Iyo,T. Saito,H. Fukazawa,Y. Kohori,H. Harima,S. Uji###
(603222, 603222)
 From the AMROs, wedetermined the two Q2D FSs with rounded-square cross sections, corresponding to12% and 17% of the first Brillouin zone.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 3.7, 'K', 1],[19.0, 12, '%', 0],[24.0, 17, '%', 0],[112.0, 3, 'd', 2]

FS
###Quasi-Two-Dimensional Fermi Surfaces and Coherent Interlayer Transport in KFe$_2$As$_2$|M. Kimata,T. Terashima,N. Kurita,H. Satsukawa,A. Harada,K. Kodama,A. Sato,M. Imai,K. Kihou,C. H. Lee,H. Kito,H. Eisaki,A. Iyo,T. Saito,H. Fukazawa,Y. Kohori,H. Harima,S. Uji###
(603272, 603273)
 The rounded-squared shape of the FScross section is also confirmed by the analyses of the interlayer transportunder in-plane fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 3.7, 'K', 2],[31.0, 12, '%', 1],[26.0, 17, '%', 1],[61.0, 3, 'd', 1]

FS
###Quasi-Two-Dimensional Fermi Surfaces and Coherent Interlayer Transport in KFe$_2$As$_2$|M. Kimata,T. Terashima,N. Kurita,H. Satsukawa,A. Harada,K. Kodama,A. Sato,M. Imai,K. Kihou,C. H. Lee,H. Kito,H. Eisaki,A. Iyo,T. Saito,H. Fukazawa,Y. Kohori,H. Harima,S. Uji###
(603316, 603317)
 From the obtained FS shape, we infer the character ofthe 3d orbitals that contribute to the FSs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 3.7, 'K', 3],[75.0, 12, '%', 2],[70.0, 17, '%', 2],[17.0, 3, 'd', 0]

F
###Quasi-Two-Dimensional Fermi Surfaces and Coherent Interlayer Transport in KFe$_2$As$_2$|M. Kimata,T. Terashima,N. Kurita,H. Satsukawa,A. Harada,K. Kodama,A. Sato,M. Imai,K. Kihou,C. H. Lee,H. Kito,H. Eisaki,A. Iyo,T. Saito,H. Fukazawa,Y. Kohori,H. Harima,S. Uji###
(603346, 603346)
 From the obtained FS shape, we infer the character ofthe 3d orbitals that contribute to the FSs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 3.7, 'K', 3],[105.0, 12, '%', 2],[100.0, 17, '%', 2],[12.0, 3, 'd', 0]

GaAs/AlGaAs
###Nonlinear growth with the microwave intensity in radiation-induced magnetoresistance oscillations|R. G. Mani,C. Gerl,S. Schmult,W. Wegscheider,V. Umansky###
(603411, 603416)
 We report the observation of inverse-magnetic-field-periodic,radiation-induced magnetoresistance oscillations in GaAs/AlGaAsheterostructures prepared in W.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

W
###Nonlinear growth with the microwave intensity in radiation-induced magnetoresistance oscillations|R. G. Mani,C. Gerl,S. Schmult,W. Wegscheider,V. Umansky###
(603425, 603425)
 We report the observation of inverse-magnetic-field-periodic,radiation-induced magnetoresistance oscillations in GaAs/AlGaAsheterostructures prepared in W.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Nonlinear growth with the microwave intensity in radiation-induced magnetoresistance oscillations|R. G. Mani,C. Gerl,S. Schmult,W. Wegscheider,V. Umansky###
(603449, 603449)
 Wegscheiders<missing VAR> group, compare theircharacteristics with similar oscillations in V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Nonlinear growth with the microwave intensity in radiation-induced magnetoresistance oscillations|R. G. Mani,C. Gerl,S. Schmult,W. Wegscheider,V. Umansky###
(603479, 603479)
 the radiation power, P, in the twosystems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Nonlinear growth with the microwave intensity in radiation-induced magnetoresistance oscillations|R. G. Mani,C. Gerl,S. Schmult,W. Wegscheider,V. Umansky###
(603542, 603542)
 We find that the radiation-induced oscillatory Delta R<missing VAR>xx, inboth materials, can be described by Delta R<missing VAR>xx  -A exp(-lambda/B)sin(2pi F/B), where A is the amplitude, lambda is the damping parameter, andF is the oscillation frequency.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Nonlinear growth with the microwave intensity in radiation-induced magnetoresistance oscillations|R. G. Mani,C. Gerl,S. Schmult,W. Wegscheider,V. Umansky###
(603553, 603553)
 We find that the radiation-induced oscillatory Delta R<missing VAR>xx, inboth materials, can be described by Delta R<missing VAR>xx  -A exp(-lambda/B)sin(2pi F/B), where A is the amplitude, lambda is the damping parameter, andF is the oscillation frequency.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Nonlinear growth with the microwave intensity in radiation-induced magnetoresistance oscillations|R. G. Mani,C. Gerl,S. Schmult,W. Wegscheider,V. Umansky###
(603582, 603582)
 We find that the radiation-induced oscillatory Delta R<missing VAR>xx, inboth materials, can be described by Delta R<missing VAR>xx  -A exp(-lambda/B)sin(2pi F/B), where A is the amplitude, lambda is the damping parameter, andF is the oscillation frequency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Nonlinear growth with the microwave intensity in radiation-induced magnetoresistance oscillations|R. G. Mani,C. Gerl,S. Schmult,W. Wegscheider,V. Umansky###
(603599, 603599)
 Both lambda and F turn out to beinsensitive to P.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Nonlinear growth with the microwave intensity in radiation-induced magnetoresistance oscillations|R. G. Mani,C. Gerl,S. Schmult,W. Wegscheider,V. Umansky###
(603614, 603614)
 Both lambda and F turn out to beinsensitive to P.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Nonlinear growth with the microwave intensity in radiation-induced magnetoresistance oscillations|R. G. Mani,C. Gerl,S. Schmult,W. Wegscheider,V. Umansky###
(603634, 603634)
 On the other hand, A grows nonlinearly with P.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

UCoGe
###First Observation of Quantum Oscillations in the Ferromagnetic Superconductor UCoGe|Dai Aoki,Ilya Sheikin,Tatsuma D. Matsuda,Valentin Taufour,Georg Knebel,Jacques Flouquet###
(603663, 603665)
First Observation of Quantum Oscillations in the Ferromagnetic Superconductor UCoGe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[47.0, 34, 'T', 1],[130.0, 25, 'm', 3],[144.0, 22, 'T', 3]

UCoGe
###First Observation of Quantum Oscillations in the Ferromagnetic Superconductor UCoGe|Dai Aoki,Ilya Sheikin,Tatsuma D. Matsuda,Valentin Taufour,Georg Knebel,Jacques Flouquet###
(603693, 603695)
 We succeeded in growing high quality single crystals of the ferromagneticsuperconductor UCoGe and measured the magnetoresistance at fields up to 34T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[17.0, 34, 'T', 0],[100.0, 25, 'm', 2],[114.0, 22, 'T', 2]

U
###First Observation of Quantum Oscillations in the Ferromagnetic Superconductor UCoGe|Dai Aoki,Ilya Sheikin,Tatsuma D. Matsuda,Valentin Taufour,Georg Knebel,Jacques Flouquet###
(603742, 603742)
The Shubnikov-de Haas signal was observed for the first time in a U-111 system(UT<missing VAR>Ge, UT<missing VAR>Si, T<missing VAR> transition metal).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 34, 'T', 1],[53.0, 25, 'm', 1],[67.0, 22, 'T', 1]

U
###First Observation of Quantum Oscillations in the Ferromagnetic Superconductor UCoGe|Dai Aoki,Ilya Sheikin,Tatsuma D. Matsuda,Valentin Taufour,Georg Knebel,Jacques Flouquet###
(603750, 603750)
The Shubnikov-de Haas signal was observed for the first time in a U-111 system(UT<missing VAR>Ge, UT<missing VAR>Si, T<missing VAR> transition metal).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 34, 'T', 1],[45.0, 25, 'm', 1],[59.0, 22, 'T', 1]

Ge
###First Observation of Quantum Oscillations in the Ferromagnetic Superconductor UCoGe|Dai Aoki,Ilya Sheikin,Tatsuma D. Matsuda,Valentin Taufour,Georg Knebel,Jacques Flouquet###
(603752, 603752)
The Shubnikov-de Haas signal was observed for the first time in a U-111 system(UT<missing VAR>Ge, UT<missing VAR>Si, T<missing VAR> transition metal).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 34, 'T', 1],[43.0, 25, 'm', 1],[57.0, 22, 'T', 1]

U
###First Observation of Quantum Oscillations in the Ferromagnetic Superconductor UCoGe|Dai Aoki,Ilya Sheikin,Tatsuma D. Matsuda,Valentin Taufour,Georg Knebel,Jacques Flouquet###
(603755, 603755)
The Shubnikov-de Haas signal was observed for the first time in a U-111 system(UT<missing VAR>Ge, UT<missing VAR>Si, T<missing VAR> transition metal).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 34, 'T', 1],[40.0, 25, 'm', 1],[54.0, 22, 'T', 1]

Si
###First Observation of Quantum Oscillations in the Ferromagnetic Superconductor UCoGe|Dai Aoki,Ilya Sheikin,Tatsuma D. Matsuda,Valentin Taufour,Georg Knebel,Jacques Flouquet###
(603757, 603757)
The Shubnikov-de Haas signal was observed for the first time in a U-111 system(UT<missing VAR>Ge, UT<missing VAR>Si, T<missing VAR> transition metal).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 34, 'T', 1],[38.0, 25, 'm', 1],[52.0, 22, 'T', 1]

F1
###First Observation of Quantum Oscillations in the Ferromagnetic Superconductor UCoGe|Dai Aoki,Ilya Sheikin,Tatsuma D. Matsuda,Valentin Taufour,Georg Knebel,Jacques Flouquet###
(603779, 603780)
 A small pocket Fermi surface (F1kT) withlarge cyclotron effective mass 25m0 was detected at high fields above 22T,implying that UCoGe is a low carrier system accompanyed with heavyquasi-particles.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 34, 'T', 2],[15.0, 25, 'm', 0],[29.0, 22, 'T', 0]

UCoGe
###First Observation of Quantum Oscillations in the Ferromagnetic Superconductor UCoGe|Dai Aoki,Ilya Sheikin,Tatsuma D. Matsuda,Valentin Taufour,Georg Knebel,Jacques Flouquet###
(603817, 603819)
 A small pocket Fermi surface (F1kT) withlarge cyclotron effective mass 25m0 was detected at high fields above 22T,implying that UCoGe is a low carrier system accompanyed with heavyquasi-particles.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[105.0, 34, 'T', 2],[22.0, 25, 'm', 0],[8.0, 22, 'T', 0]

Pr0.5Ca0.5MnO3
###Intricacies of Strain and Magnetic Field Induced Charge Order Melting in Pr0.5Ca0.5MnO3 Thin Films|Dipak Kumar Baisnab,T. Geetha Kumary,A. T. Satya,Awadhesh Mani,J. Janaki,R. Nithya,L. S. Vaidhyanathan,M. P. Janawadkar,A. Bharathi###
(603952, 603958)
Intricacies of Strain and Magnetic Field Induced Charge Order Melting in Pr0.5Ca0.5MnO3 Thin Films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pr0.5Ca0.5MnO3
###Intricacies of Strain and Magnetic Field Induced Charge Order Melting in Pr0.5Ca0.5MnO3 Thin Films|Dipak Kumar Baisnab,T. Geetha Kumary,A. T. Satya,Awadhesh Mani,J. Janaki,R. Nithya,L. S. Vaidhyanathan,M. P. Janawadkar,A. Bharathi###
(603979, 603985)
 Thin films of the half doped manganite Pr0.5Ca0.5MnO3 were grown on (100)oriented MgO substrates by pulsed laser deposition technique.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Intricacies of Strain and Magnetic Field Induced Charge Order Melting in Pr0.5Ca0.5MnO3 Thin Films|Dipak Kumar Baisnab,T. Geetha Kumary,A. T. Satya,Awadhesh Mani,J. Janaki,R. Nithya,L. S. Vaidhyanathan,M. P. Janawadkar,A. Bharathi###
(604000, 604001)
 Thin films of the half doped manganite Pr0.5Ca0.5MnO3 were grown on (100)oriented MgO substrates by pulsed laser deposition technique.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Intricacies of Strain and Magnetic Field Induced Charge Order Melting in Pr0.5Ca0.5MnO3 Thin Films|Dipak Kumar Baisnab,T. Geetha Kumary,A. T. Satya,Awadhesh Mani,J. Janaki,R. Nithya,L. S. Vaidhyanathan,M. P. Janawadkar,A. Bharathi###
(604016, 604016)
 In order to studythe effect of strain on the magnetic field induced charge order melting, filmsof different thicknesses were prepared and their properties were studied byx<missing VAR>-ray diffraction, electrical resistivity and magnetoresistance measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs/AlGaAs
###Sub-linear radiation power dependence of photo-excited resistance oscillations in two-dimensional electron systems|Jesus Inarrea,R. G. Mani,W. Wegscheider###
(604251, 604256)
 We find that the amplitude of the R<missing VAR>xx radiation-inducedmagnetoresistance oscillations in GaAs/AlGaAs system grows nonlinearly as Apropto Palpha where A is the amplitude and the exponent alpha < 1.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

P
###Sub-linear radiation power dependence of photo-excited resistance oscillations in two-dimensional electron systems|Jesus Inarrea,R. G. Mani,W. Wegscheider###
(604271, 604271)
 We find that the amplitude of the R<missing VAR>xx radiation-inducedmagnetoresistance oscillations in GaAs/AlGaAs system grows nonlinearly as Apropto Palpha where A is the amplitude and the exponent alpha < 1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Sub-linear radiation power dependence of photo-excited resistance oscillations in two-dimensional electron systems|Jesus Inarrea,R. G. Mani,W. Wegscheider###
(604403, 604403)
 This strikingresult can be explained with the radiation-driven electron orbits model, whichsuggests that the amplitude of resistance oscillations depends linearly on theradiation electric field, and therefore on the square root of the power, P.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si/SiGe/Si
###Magnetoresistivity and Acoustoelectronic Effects in a Tilted Magnetic Field in $p$-Si/SiGe/Si Structures with an Anisotropic $g$ Factor|I. L. Drichko,I. Yu. Smirnov,A. V. Suslov,O. A. Mironov,D. R. Leadley###
(604471, 604476)
Magnetoresistivity and Acoustoelectronic Effects in a Tilted Magnetic Field in p<missing VAR>-Si/SiGe/Si Structures with an Anisotropic g<missing VAR> Factor.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[103.0, 18, 'T', 1],[216.0, 2, 'at', 3]

Si/SiGe/Si
###Magnetoresistivity and Acoustoelectronic Effects in a Tilted Magnetic Field in $p$-Si/SiGe/Si Structures with an Anisotropic $g$ Factor|I. L. Drichko,I. Yu. Smirnov,A. V. Suslov,O. A. Mironov,D. R. Leadley###
(604520, 604525)
 Magnetoresistivity rho xx and rho xy and the acoustoelectroniceffects are measured in p<missing VAR>-Si/SiGe/Si with an impurity concentration p<missing VAR>  2times  1011 cm-2 in the temperature range 0.3-2.0 K and an tiltedmagnetic field up to 18 T.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[54.0, 18, 'T', 0],[167.0, 2, 'at', 2]

K
###Magnetoresistivity and Acoustoelectronic Effects in a Tilted Magnetic Field in $p$-Si/SiGe/Si Structures with an Anisotropic $g$ Factor|I. L. Drichko,I. Yu. Smirnov,A. V. Suslov,O. A. Mironov,D. R. Leadley###
(604563, 604563)
 Magnetoresistivity rho xx and rho xy and the acoustoelectroniceffects are measured in p<missing VAR>-Si/SiGe/Si with an impurity concentration p<missing VAR>  2times  1011 cm-2 in the temperature range 0.3-2.0 K and an tiltedmagnetic field up to 18 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 18, 'T', 0],[129.0, 2, 'at', 2]

Si/SiGe/Si
###Magnetoresistivity and Acoustoelectronic Effects in a Tilted Magnetic Field in $p$-Si/SiGe/Si Structures with an Anisotropic $g$ Factor|I. L. Drichko,I. Yu. Smirnov,A. V. Suslov,O. A. Mironov,D. R. Leadley###
(604637, 604642)
 The dependence of the effective g<missing VAR>-factor on theangle of magnetic field tilt theta  to the normal to the plane of a twodimensional p<missing VAR>-Si/SiGe/Si channel is determined.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[58.0, 18, 'T', 1],[50.0, 2, 'at', 1]

CV
###Magneto-transport of large CVD-grown graphene|Eric Whiteway,Victor Yu,Josianne Lefebvre,Robert Gagnon,Michael Hilke###
(604725, 604726)
Magneto-transport of large CVD<missing VAR>-grown graphene.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 30, 'mK', 3]

CV
###Magneto-transport of large CVD-grown graphene|Eric Whiteway,Victor Yu,Josianne Lefebvre,Robert Gagnon,Michael Hilke###
(604764, 604765)
 We present magnetoresistance measurements on large scale monolayer graphenegrown by chemical vapor deposition (CVD) on copper.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 30, 'mK', 2]

SiO2/Si
###Magneto-transport of large CVD-grown graphene|Eric Whiteway,Victor Yu,Josianne Lefebvre,Robert Gagnon,Michael Hilke###
(604787, 604791)
 The graphene layer wastransferred onto SiO2/Si via PMMA and thermal release tape for transportmeasurements.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[49.0, 30, 'mK', 1]

P
###Magneto-transport of large CVD-grown graphene|Eric Whiteway,Victor Yu,Josianne Lefebvre,Robert Gagnon,Michael Hilke###
(604795, 604795)
 The graphene layer wastransferred onto SiO2/Si via PMMA and thermal release tape for transportmeasurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 30, 'mK', 1]

CV
###Magneto-transport of large CVD-grown graphene|Eric Whiteway,Victor Yu,Josianne Lefebvre,Robert Gagnon,Michael Hilke###
(604956, 604957)
 Thesamples exhibit conductance fluctuations symmetric in field, which areattributed to ensemble averaged conductance fluctuations due to large scaleinhomogeneities consistent with the grain boundaries of copper during the CVD<missing VAR>growth.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 30, 'mK', 2]

InSb
###Weak field magnetoresistance of narrow-gap semiconductor InSb|R. Yang,K. H. Gao,Y. H. Zhang,P. P. Chen,G. Yu,L. M. Wei,T. Lin,N. Dai,J. H. Chu###
(604986, 604987)
Weak field magnetoresistance of narrow-gap semiconductor InSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

InSb
###Weak field magnetoresistance of narrow-gap semiconductor InSb|R. Yang,K. H. Gao,Y. H. Zhang,P. P. Chen,G. Yu,L. M. Wei,T. Lin,N. Dai,J. H. Chu###
(605000, 605001)
 The weak antilocalization effect of InSb film in perpendicular as well astilted magnetic field is investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

InSb
###Weak field magnetoresistance of narrow-gap semiconductor InSb|R. Yang,K. H. Gao,Y. H. Zhang,P. P. Chen,G. Yu,L. M. Wei,T. Lin,N. Dai,J. H. Chu###
(605037, 605038)
 It is found that the InSb film hasquasi-two-dimensional feature and the Nyquist mechanism dominates decoherence.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

InSb
###Weak field magnetoresistance of narrow-gap semiconductor InSb|R. Yang,K. H. Gao,Y. H. Zhang,P. P. Chen,G. Yu,L. M. Wei,T. Lin,N. Dai,J. H. Chu###
(605182, 605183)
 It is also found that the existence of in-planefield can effectively suppress the weak antilocalization effect of InSb filmand the roughness effect plays an important role in the anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Rb0.78Fe2Se1.78
###Superconductivity at 32 K in single crystal Rb$_{0.78}$Fe$_2$Se$_{1.78}$}|A. F. Wang,J. J. Ying,Y. J. Yan,R. H. Liu,X. G. Luo,Z. Y. Li,X. F. Wang,M. Zhang,G. J. Ye,P. Cheng,Z. J. Xiang,X. H. Chen###
(605230, 605235)
Superconductivity at 32 K in single crystal Rb0.78Fe2Se1.78.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.43859649122807015,0,0,0,0,0,0,0,0.3903508771929824,0,0,0.17105263157894735,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 32, 'K', 0],[77.0, 32.1, 'K', 2],[87.0, 30, 'K', 2],[137.0, 180, 'T', 3],[148.0, 59, 'T', 3],[190.0, 3.0, ',', 4]

Rb0.78Fe2Se1.78
###Superconductivity at 32 K in single crystal Rb$_{0.78}$Fe$_2$Se$_{1.78}$}|A. F. Wang,J. J. Ying,Y. J. Yan,R. H. Liu,X. G. Luo,Z. Y. Li,X. F. Wang,M. Zhang,G. J. Ye,P. Cheng,Z. J. Xiang,X. H. Chen###
(605257, 605262)
 We successfully grew the high-quality single crystal ofRb0.78Fe2Se1.78, which shows sharp superconducting transition inmagnetic susceptibility and electrical resistivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.43859649122807015,0,0,0,0,0,0,0,0.3903508771929824,0,0,0.17105263157894735,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 32, 'K', 1],[50.0, 32.1, 'K', 1],[60.0, 30, 'K', 1],[110.0, 180, 'T', 2],[121.0, 59, 'T', 2],[163.0, 3.0, ',', 3]

H
###Superconductivity at 32 K in single crystal Rb$_{0.78}$Fe$_2$Se$_{1.78}$}|A. F. Wang,J. J. Ying,Y. J. Yan,R. H. Liu,X. G. Luo,Z. Y. Li,X. F. Wang,M. Zhang,G. J. Ye,P. Cheng,Z. J. Xiang,X. H. Chen###
(605351, 605351)
 From the low-temperature iso-magnetic-fieldmagnetoresistance, large upper critical field Hrm c<missing VAR>2(0) has beenestimated as high as 180 T for in-plane field and 59 T for out-of-plane field.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 32, 'K', 3],[39.0, 32.1, 'K', 1],[29.0, 30, 'K', 1],[21.0, 180, 'T', 0],[32.0, 59, 'T', 0],[74.0, 3.0, ',', 1]

H
###Superconductivity at 32 K in single crystal Rb$_{0.78}$Fe$_2$Se$_{1.78}$}|A. F. Wang,J. J. Ying,Y. J. Yan,R. H. Liu,X. G. Luo,Z. Y. Li,X. F. Wang,M. Zhang,G. J. Ye,P. Cheng,Z. J. Xiang,X. H. Chen###
(605401, 605401)
The anisotropy Habrm c<missing VAR>2(0)/Hc<missing VAR>rm c<missing VAR>2(0) is around 3.0, rightlying between those observed in Kx<missing VAR>Fe2Se2 and Csx<missing VAR>Fe2Se2.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 32, 'K', 4],[89.0, 32.1, 'K', 2],[79.0, 30, 'K', 2],[29.0, 180, 'T', 1],[18.0, 59, 'T', 1],[24.0, 3.0, ',', 0]

H
###Superconductivity at 32 K in single crystal Rb$_{0.78}$Fe$_2$Se$_{1.78}$}|A. F. Wang,J. J. Ying,Y. J. Yan,R. H. Liu,X. G. Luo,Z. Y. Li,X. F. Wang,M. Zhang,G. J. Ye,P. Cheng,Z. J. Xiang,X. H. Chen###
(605411, 605411)
The anisotropy Habrm c<missing VAR>2(0)/Hc<missing VAR>rm c<missing VAR>2(0) is around 3.0, rightlying between those observed in Kx<missing VAR>Fe2Se2 and Csx<missing VAR>Fe2Se2.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[189.0, 32, 'K', 4],[99.0, 32.1, 'K', 2],[89.0, 30, 'K', 2],[39.0, 180, 'T', 1],[28.0, 59, 'T', 1],[14.0, 3.0, ',', 0]

K
###Superconductivity at 32 K in single crystal Rb$_{0.78}$Fe$_2$Se$_{1.78}$}|A. F. Wang,J. J. Ying,Y. J. Yan,R. H. Liu,X. G. Luo,Z. Y. Li,X. F. Wang,M. Zhang,G. J. Ye,P. Cheng,Z. J. Xiang,X. H. Chen###
(605441, 605441)
The anisotropy Habrm c<missing VAR>2(0)/Hc<missing VAR>rm c<missing VAR>2(0) is around 3.0, rightlying between those observed in Kx<missing VAR>Fe2Se2 and Csx<missing VAR>Fe2Se2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[219.0, 32, 'K', 4],[129.0, 32.1, 'K', 2],[119.0, 30, 'K', 2],[69.0, 180, 'T', 1],[58.0, 59, 'T', 1],[16.0, 3.0, ',', 0]

Fe2Se2
###Superconductivity at 32 K in single crystal Rb$_{0.78}$Fe$_2$Se$_{1.78}$}|A. F. Wang,J. J. Ying,Y. J. Yan,R. H. Liu,X. G. Luo,Z. Y. Li,X. F. Wang,M. Zhang,G. J. Ye,P. Cheng,Z. J. Xiang,X. H. Chen###
(605443, 605446)
The anisotropy Habrm c<missing VAR>2(0)/Hc<missing VAR>rm c<missing VAR>2(0) is around 3.0, rightlying between those observed in Kx<missing VAR>Fe2Se2 and Csx<missing VAR>Fe2Se2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[221.0, 32, 'K', 4],[131.0, 32.1, 'K', 2],[121.0, 30, 'K', 2],[71.0, 180, 'T', 1],[60.0, 59, 'T', 1],[18.0, 3.0, ',', 0]

Cs
###Superconductivity at 32 K in single crystal Rb$_{0.78}$Fe$_2$Se$_{1.78}$}|A. F. Wang,J. J. Ying,Y. J. Yan,R. H. Liu,X. G. Luo,Z. Y. Li,X. F. Wang,M. Zhang,G. J. Ye,P. Cheng,Z. J. Xiang,X. H. Chen###
(605450, 605450)
The anisotropy Habrm c<missing VAR>2(0)/Hc<missing VAR>rm c<missing VAR>2(0) is around 3.0, rightlying between those observed in Kx<missing VAR>Fe2Se2 and Csx<missing VAR>Fe2Se2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[228.0, 32, 'K', 4],[138.0, 32.1, 'K', 2],[128.0, 30, 'K', 2],[78.0, 180, 'T', 1],[67.0, 59, 'T', 1],[25.0, 3.0, ',', 0]

Fe2Se2
###Superconductivity at 32 K in single crystal Rb$_{0.78}$Fe$_2$Se$_{1.78}$}|A. F. Wang,J. J. Ying,Y. J. Yan,R. H. Liu,X. G. Luo,Z. Y. Li,X. F. Wang,M. Zhang,G. J. Ye,P. Cheng,Z. J. Xiang,X. H. Chen###
(605452, 605455)
The anisotropy Habrm c<missing VAR>2(0)/Hc<missing VAR>rm c<missing VAR>2(0) is around 3.0, rightlying between those observed in Kx<missing VAR>Fe2Se2 and Csx<missing VAR>Fe2Se2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[230.0, 32, 'K', 4],[140.0, 32.1, 'K', 2],[130.0, 30, 'K', 2],[80.0, 180, 'T', 1],[69.0, 59, 'T', 1],[27.0, 3.0, ',', 0]

Ag2Te
###Topological Aspect and Quantum Magnetoresistance of $β$-Ag$_2$Te|Wei Zhang,Rui Yu,Wanxiang Feng,Yugui Yao,Hongming Weng,Xi Dai,Zhong Fang###
(605479, 605481)
Topological Aspect and Quantum Magnetoresistance of -Ag2Te.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ag2Te
###Topological Aspect and Quantum Magnetoresistance of $β$-Ag$_2$Te|Wei Zhang,Rui Yu,Wanxiang Feng,Yugui Yao,Hongming Weng,Xi Dai,Zhong Fang###
(605563, 605565)
 Here we show, by first principlescalculations, that beta-Ag2Te with distorted anti-fluorite structure isin fact a topological insulator with gapless Dirac-type surface states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Te3
###Topological Aspect and Quantum Magnetoresistance of $β$-Ag$_2$Te|Wei Zhang,Rui Yu,Wanxiang Feng,Yugui Yao,Hongming Weng,Xi Dai,Zhong Fang###
(605651, 605654)
 Thecharacteristic feature of this new binary topological insulator is the highlyanisotropic Dirac cone, in contrast to known examples, such as Bi2Te3 andBi2Se3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Se3
###Topological Aspect and Quantum Magnetoresistance of $β$-Ag$_2$Te|Wei Zhang,Rui Yu,Wanxiang Feng,Yugui Yao,Hongming Weng,Xi Dai,Zhong Fang###
(605659, 605662)
 Thecharacteristic feature of this new binary topological insulator is the highlyanisotropic Dirac cone, in contrast to known examples, such as Bi2Te3 andBi2Se3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###Hidden Fermi Liquid: Self-Consistent Theory for the Normal State of High-Tc Superconductors|Philip A. Casey,Philip W. Anderson###
(605725, 605725)
Hidden Fermi Liquid Self-Consistent Theory for the Normal State of High-Tc Superconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###Hidden Fermi Liquid: Self-Consistent Theory for the Normal State of High-Tc Superconductors|Philip A. Casey,Philip W. Anderson###
(605787, 605787)
 Hidden Fermi liquid theory explicitly accounts for the effects of Gutzwillerprojection in the t-J Hamiltonian, widely believed to contain the essentialphysics of the high-Tc superconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaNiO3
###Metal-insulator transition in ultrathin LaNiO3 films|R. Scherwitzl,S. Gariglio,M. Gabay,P. Zubko,M. Gibert,J. -M. Triscone###
(605960, 605963)
Metal-insulator transition in ultrathin LaNiO3 films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 2, ',', 1]

LaNiO3
###Metal-insulator transition in ultrathin LaNiO3 films|R. Scherwitzl,S. Gariglio,M. Gabay,P. Zubko,M. Gibert,J. -M. Triscone###
(605978, 605981)
 Transport in ultrathin films of LaNiO3 evolves from a metallic to a stronglylocalized character as the films<missing VAR> thickness is reduced and the sheet resistancereaches a value close to h/e2, the quantum of resistance in two dimensions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 2, ',', 0]

In
###Metal-insulator transition in ultrathin LaNiO3 films|R. Scherwitzl,S. Gariglio,M. Gabay,P. Zubko,M. Gibert,J. -M. Triscone###
(606055, 606055)
 Inthe intermediate regime, quantum corrections to the Drude low- temperatureconductivity are observed; they are accurately described by weak localizationtheory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 2, ',', 1]

Au
###Superconducting Vortices induced Periodic Magnetoresistance Oscillations in Single Crystal Au Nanowires|Lin He,Jian Wang###
(606216, 606216)
Superconducting Vortices induced Periodic Magnetoresistance Oscillations in Single Crystal Au Nanowires.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 35, 'nm', 3]

Rn0.13
###Anomalous-Nernst and anisotropic magnetoresistive heating in a lateral spin valve|A. Slachter,F. L. Bakker,B. J. van Wees###
(606576, 606577)
 Using thismodel, we extract the heat profile which we use to determine the anomalousNernst coefficient of Permalloy Rn0.13 and also determine the maximum angle oftheta8 degrees of the magnetization prior to the switching process when anopposing non-collinear 10circ magnetic field is applied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Ferromagnetic Enhancement of CE-type Spin Ordering in (Pr,Ca)MnO$_3$|S. Y. Zhou,Y. Zhu,M. C. Langner,Y. -D. Chuang,P. Yu,W. L. Yang,A. G. Cruz Gonzalez,N. Tahir,M. Rini,Y. -H. Chu,R. Ramesh,D. -H. Lee,Y. Tomioka,Z. Hussain,R. W. Schoenlein###
(606652, 606652)
Ferromagnetic Enhancement of CE<missing VAR>-type Spin Ordering in (Pr,Ca)MnO3.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pr
###Ferromagnetic Enhancement of CE-type Spin Ordering in (Pr,Ca)MnO$_3$|S. Y. Zhou,Y. Zhu,M. C. Langner,Y. -D. Chuang,P. Yu,W. L. Yang,A. G. Cruz Gonzalez,N. Tahir,M. Rini,Y. -H. Chu,R. Ramesh,D. -H. Lee,Y. Tomioka,Z. Hussain,R. W. Schoenlein###
(606664, 606664)
Ferromagnetic Enhancement of CE<missing VAR>-type Spin Ordering in (Pr,Ca)MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ca
###Ferromagnetic Enhancement of CE-type Spin Ordering in (Pr,Ca)MnO$_3$|S. Y. Zhou,Y. Zhu,M. C. Langner,Y. -D. Chuang,P. Yu,W. L. Yang,A. G. Cruz Gonzalez,N. Tahir,M. Rini,Y. -H. Chu,R. Ramesh,D. -H. Lee,Y. Tomioka,Z. Hussain,R. W. Schoenlein###
(606666, 606666)
Ferromagnetic Enhancement of CE<missing VAR>-type Spin Ordering in (Pr,Ca)MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnO3
###Ferromagnetic Enhancement of CE-type Spin Ordering in (Pr,Ca)MnO$_3$|S. Y. Zhou,Y. Zhu,M. C. Langner,Y. -D. Chuang,P. Yu,W. L. Yang,A. G. Cruz Gonzalez,N. Tahir,M. Rini,Y. -H. Chu,R. Ramesh,D. -H. Lee,Y. Tomioka,Z. Hussain,R. W. Schoenlein###
(606668, 606670)
Ferromagnetic Enhancement of CE<missing VAR>-type Spin Ordering in (Pr,Ca)MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Ferromagnetic Enhancement of CE-type Spin Ordering in (Pr,Ca)MnO$_3$|S. Y. Zhou,Y. Zhu,M. C. Langner,Y. -D. Chuang,P. Yu,W. L. Yang,A. G. Cruz Gonzalez,N. Tahir,M. Rini,Y. -H. Chu,R. Ramesh,D. -H. Lee,Y. Tomioka,Z. Hussain,R. W. Schoenlein###
(606691, 606691)
 We present resonant soft X<missing VAR>-ray scattering (RSXS) results from small bandwidth manganites (Pr,Ca)MnO3, which show that the CE<missing VAR>-type spin ordering (SO)at the phase boundary is stabilized only below the canted antiferromagnetictransition temperature and enhanced by ferromagnetism in the macroscopicallyinsulating state (FM<missing VAR>-I).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pr
###Ferromagnetic Enhancement of CE-type Spin Ordering in (Pr,Ca)MnO$_3$|S. Y. Zhou,Y. Zhu,M. C. Langner,Y. -D. Chuang,P. Yu,W. L. Yang,A. G. Cruz Gonzalez,N. Tahir,M. Rini,Y. -H. Chu,R. Ramesh,D. -H. Lee,Y. Tomioka,Z. Hussain,R. W. Schoenlein###
(606708, 606708)
 We present resonant soft X<missing VAR>-ray scattering (RSXS) results from small bandwidth manganites (Pr,Ca)MnO3, which show that the CE<missing VAR>-type spin ordering (SO)at the phase boundary is stabilized only below the canted antiferromagnetictransition temperature and enhanced by ferromagnetism in the macroscopicallyinsulating state (FM<missing VAR>-I).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ca
###Ferromagnetic Enhancement of CE-type Spin Ordering in (Pr,Ca)MnO$_3$|S. Y. Zhou,Y. Zhu,M. C. Langner,Y. -D. Chuang,P. Yu,W. L. Yang,A. G. Cruz Gonzalez,N. Tahir,M. Rini,Y. -H. Chu,R. Ramesh,D. -H. Lee,Y. Tomioka,Z. Hussain,R. W. Schoenlein###
(606710, 606710)
 We present resonant soft X<missing VAR>-ray scattering (RSXS) results from small bandwidth manganites (Pr,Ca)MnO3, which show that the CE<missing VAR>-type spin ordering (SO)at the phase boundary is stabilized only below the canted antiferromagnetictransition temperature and enhanced by ferromagnetism in the macroscopicallyinsulating state (FM<missing VAR>-I).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnO3
###Ferromagnetic Enhancement of CE-type Spin Ordering in (Pr,Ca)MnO$_3$|S. Y. Zhou,Y. Zhu,M. C. Langner,Y. -D. Chuang,P. Yu,W. L. Yang,A. G. Cruz Gonzalez,N. Tahir,M. Rini,Y. -H. Chu,R. Ramesh,D. -H. Lee,Y. Tomioka,Z. Hussain,R. W. Schoenlein###
(606712, 606714)
 We present resonant soft X<missing VAR>-ray scattering (RSXS) results from small bandwidth manganites (Pr,Ca)MnO3, which show that the CE<missing VAR>-type spin ordering (SO)at the phase boundary is stabilized only below the canted antiferromagnetictransition temperature and enhanced by ferromagnetism in the macroscopicallyinsulating state (FM<missing VAR>-I).
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Ferromagnetic Enhancement of CE-type Spin Ordering in (Pr,Ca)MnO$_3$|S. Y. Zhou,Y. Zhu,M. C. Langner,Y. -D. Chuang,P. Yu,W. L. Yang,A. G. Cruz Gonzalez,N. Tahir,M. Rini,Y. -H. Chu,R. Ramesh,D. -H. Lee,Y. Tomioka,Z. Hussain,R. W. Schoenlein###
(606725, 606725)
 We present resonant soft X<missing VAR>-ray scattering (RSXS) results from small bandwidth manganites (Pr,Ca)MnO3, which show that the CE<missing VAR>-type spin ordering (SO)at the phase boundary is stabilized only below the canted antiferromagnetictransition temperature and enhanced by ferromagnetism in the macroscopicallyinsulating state (FM<missing VAR>-I).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(SO)
###Ferromagnetic Enhancement of CE-type Spin Ordering in (Pr,Ca)MnO$_3$|S. Y. Zhou,Y. Zhu,M. C. Langner,Y. -D. Chuang,P. Yu,W. L. Yang,A. G. Cruz Gonzalez,N. Tahir,M. Rini,Y. -H. Chu,R. Ramesh,D. -H. Lee,Y. Tomioka,Z. Hussain,R. W. Schoenlein###
(606734, 606737)
 We present resonant soft X<missing VAR>-ray scattering (RSXS) results from small bandwidth manganites (Pr,Ca)MnO3, which show that the CE<missing VAR>-type spin ordering (SO)at the phase boundary is stabilized only below the canted antiferromagnetictransition temperature and enhanced by ferromagnetism in the macroscopicallyinsulating state (FM<missing VAR>-I).
Featurization successful!
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Ferromagnetic Enhancement of CE-type Spin Ordering in (Pr,Ca)MnO$_3$|S. Y. Zhou,Y. Zhu,M. C. Langner,Y. -D. Chuang,P. Yu,W. L. Yang,A. G. Cruz Gonzalez,N. Tahir,M. Rini,Y. -H. Chu,R. Ramesh,D. -H. Lee,Y. Tomioka,Z. Hussain,R. W. Schoenlein###
(606787, 606787)
 We present resonant soft X<missing VAR>-ray scattering (RSXS) results from small bandwidth manganites (Pr,Ca)MnO3, which show that the CE<missing VAR>-type spin ordering (SO)at the phase boundary is stabilized only below the canted antiferromagnetictransition temperature and enhanced by ferromagnetism in the macroscopicallyinsulating state (FM<missing VAR>-I).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Ferromagnetic Enhancement of CE-type Spin Ordering in (Pr,Ca)MnO$_3$|S. Y. Zhou,Y. Zhu,M. C. Langner,Y. -D. Chuang,P. Yu,W. L. Yang,A. G. Cruz Gonzalez,N. Tahir,M. Rini,Y. -H. Chu,R. Ramesh,D. -H. Lee,Y. Tomioka,Z. Hussain,R. W. Schoenlein###
(606790, 606790)
 We present resonant soft X<missing VAR>-ray scattering (RSXS) results from small bandwidth manganites (Pr,Ca)MnO3, which show that the CE<missing VAR>-type spin ordering (SO)at the phase boundary is stabilized only below the canted antiferromagnetictransition temperature and enhanced by ferromagnetism in the macroscopicallyinsulating state (FM<missing VAR>-I).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Ferromagnetic Enhancement of CE-type Spin Ordering in (Pr,Ca)MnO$_3$|S. Y. Zhou,Y. Zhu,M. C. Langner,Y. -D. Chuang,P. Yu,W. L. Yang,A. G. Cruz Gonzalez,N. Tahir,M. Rini,Y. -H. Chu,R. Ramesh,D. -H. Lee,Y. Tomioka,Z. Hussain,R. W. Schoenlein###
(606808, 606808)
 Our results reveal the fragility of the CE<missing VAR>-typeordering that underpins the colossal magnetoresistance (CMR) effect in thissystem, as well as an unexpected cooperative interplay between FM<missing VAR>-I and CE<missing VAR>-typeSO which is in contrast to the competitive interplay between the ferromagneticmetallic (FM-M) state and CE<missing VAR>-type ordering.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Ferromagnetic Enhancement of CE-type Spin Ordering in (Pr,Ca)MnO$_3$|S. Y. Zhou,Y. Zhu,M. C. Langner,Y. -D. Chuang,P. Yu,W. L. Yang,A. G. Cruz Gonzalez,N. Tahir,M. Rini,Y. -H. Chu,R. Ramesh,D. -H. Lee,Y. Tomioka,Z. Hussain,R. W. Schoenlein###
(606827, 606827)
 Our results reveal the fragility of the CE<missing VAR>-typeordering that underpins the colossal magnetoresistance (CMR) effect in thissystem, as well as an unexpected cooperative interplay between FM<missing VAR>-I and CE<missing VAR>-typeSO which is in contrast to the competitive interplay between the ferromagneticmetallic (FM-M) state and CE<missing VAR>-type ordering.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Ferromagnetic Enhancement of CE-type Spin Ordering in (Pr,Ca)MnO$_3$|S. Y. Zhou,Y. Zhu,M. C. Langner,Y. -D. Chuang,P. Yu,W. L. Yang,A. G. Cruz Gonzalez,N. Tahir,M. Rini,Y. -H. Chu,R. Ramesh,D. -H. Lee,Y. Tomioka,Z. Hussain,R. W. Schoenlein###
(606858, 606858)
 Our results reveal the fragility of the CE<missing VAR>-typeordering that underpins the colossal magnetoresistance (CMR) effect in thissystem, as well as an unexpected cooperative interplay between FM<missing VAR>-I and CE<missing VAR>-typeSO which is in contrast to the competitive interplay between the ferromagneticmetallic (FM-M) state and CE<missing VAR>-type ordering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Ferromagnetic Enhancement of CE-type Spin Ordering in (Pr,Ca)MnO$_3$|S. Y. Zhou,Y. Zhu,M. C. Langner,Y. -D. Chuang,P. Yu,W. L. Yang,A. G. Cruz Gonzalez,N. Tahir,M. Rini,Y. -H. Chu,R. Ramesh,D. -H. Lee,Y. Tomioka,Z. Hussain,R. W. Schoenlein###
(606861, 606861)
 Our results reveal the fragility of the CE<missing VAR>-typeordering that underpins the colossal magnetoresistance (CMR) effect in thissystem, as well as an unexpected cooperative interplay between FM<missing VAR>-I and CE<missing VAR>-typeSO which is in contrast to the competitive interplay between the ferromagneticmetallic (FM-M) state and CE<missing VAR>-type ordering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Ferromagnetic Enhancement of CE-type Spin Ordering in (Pr,Ca)MnO$_3$|S. Y. Zhou,Y. Zhu,M. C. Langner,Y. -D. Chuang,P. Yu,W. L. Yang,A. G. Cruz Gonzalez,N. Tahir,M. Rini,Y. -H. Chu,R. Ramesh,D. -H. Lee,Y. Tomioka,Z. Hussain,R. W. Schoenlein###
(606865, 606865)
 Our results reveal the fragility of the CE<missing VAR>-typeordering that underpins the colossal magnetoresistance (CMR) effect in thissystem, as well as an unexpected cooperative interplay between FM<missing VAR>-I and CE<missing VAR>-typeSO which is in contrast to the competitive interplay between the ferromagneticmetallic (FM-M) state and CE<missing VAR>-type ordering.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Ferromagnetic Enhancement of CE-type Spin Ordering in (Pr,Ca)MnO$_3$|S. Y. Zhou,Y. Zhu,M. C. Langner,Y. -D. Chuang,P. Yu,W. L. Yang,A. G. Cruz Gonzalez,N. Tahir,M. Rini,Y. -H. Chu,R. Ramesh,D. -H. Lee,Y. Tomioka,Z. Hussain,R. W. Schoenlein###
(606871, 606872)
 Our results reveal the fragility of the CE<missing VAR>-typeordering that underpins the colossal magnetoresistance (CMR) effect in thissystem, as well as an unexpected cooperative interplay between FM<missing VAR>-I and CE<missing VAR>-typeSO which is in contrast to the competitive interplay between the ferromagneticmetallic (FM-M) state and CE<missing VAR>-type ordering.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Ferromagnetic Enhancement of CE-type Spin Ordering in (Pr,Ca)MnO$_3$|S. Y. Zhou,Y. Zhu,M. C. Langner,Y. -D. Chuang,P. Yu,W. L. Yang,A. G. Cruz Gonzalez,N. Tahir,M. Rini,Y. -H. Chu,R. Ramesh,D. -H. Lee,Y. Tomioka,Z. Hussain,R. W. Schoenlein###
(606900, 606900)
 Our results reveal the fragility of the CE<missing VAR>-typeordering that underpins the colossal magnetoresistance (CMR) effect in thissystem, as well as an unexpected cooperative interplay between FM<missing VAR>-I and CE<missing VAR>-typeSO which is in contrast to the competitive interplay between the ferromagneticmetallic (FM-M) state and CE<missing VAR>-type ordering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Ferromagnetic Enhancement of CE-type Spin Ordering in (Pr,Ca)MnO$_3$|S. Y. Zhou,Y. Zhu,M. C. Langner,Y. -D. Chuang,P. Yu,W. L. Yang,A. G. Cruz Gonzalez,N. Tahir,M. Rini,Y. -H. Chu,R. Ramesh,D. -H. Lee,Y. Tomioka,Z. Hussain,R. W. Schoenlein###
(606910, 606910)
 Our results reveal the fragility of the CE<missing VAR>-typeordering that underpins the colossal magnetoresistance (CMR) effect in thissystem, as well as an unexpected cooperative interplay between FM<missing VAR>-I and CE<missing VAR>-typeSO which is in contrast to the competitive interplay between the ferromagneticmetallic (FM-M) state and CE<missing VAR>-type ordering.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.65Sr0.35MnO3/SrTiO3/La0.65Sr0.35MnO3
###Improved tunneling magnetoresistance at low temperature in manganite junctions grown by molecular beam epitaxy|Robert Werner,Alexandr Yu. Petrov,Lucero Alvarez Mino,Reinhold Kleiner,Dieter Koelle,Bruce A. Davidson###
(606974, 606993)
 We report resistance versus magnetic field measurements for aLa0.65Sr0.35MnO3/SrTiO3/La0.65Sr0.35MnO3 tunnel junction grown bymolecular-beam epitaxy, that show a large field window of extremely hightunneling magnetoresistance (TMR) at low temperature.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[137.0, 1900, '%', 3],[141.0, 4, 'K', 3],[161.0, 95, '%', 3]

C
###Interplay between interferences and electron-electron interactions in epitaxial graphene|B. Jouault,B. Jabakhanji,N. Camara,W. Desrat,C. Consejo,J. Camassel###
(607276, 607276)
 We separate localization and interaction effects in epitaxial graphenedevices grown on the C-face of a 4H-SiC substrate by analyzing the lowtemperature conductivities.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 4, 'H', 0]

SiC
###Interplay between interferences and electron-electron interactions in epitaxial graphene|B. Jouault,B. Jabakhanji,N. Camara,W. Desrat,C. Consejo,J. Camassel###
(607285, 607286)
 We separate localization and interaction effects in epitaxial graphenedevices grown on the C-face of a 4H-SiC substrate by analyzing the lowtemperature conductivities.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 4, 'H', 0]

SiC
###Interplay between interferences and electron-electron interactions in epitaxial graphene|B. Jouault,B. Jabakhanji,N. Camara,W. Desrat,C. Consejo,J. Camassel###
(607472, 607473)
 If compared tographene on silicon dioxide, electron electron interaction on epitaxialgraphene are not significantly reduced by the larger dielectric constant of theSiC substrate.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[189.0, 4, 'H', 4]

PrFeAsO
###Quantm Magnetoresistance of the PrFeAsO oxypnictides|D. Bhoi,P. Mandal,P. Choudhury,S. Pandya,V. Ganesan###
(607494, 607497)
Quantm Magnetoresistance of the PrFeAsO oxypnictides.
Featurization terminated normally.
0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 14, 'T', 3]

B
###Quantm Magnetoresistance of the PrFeAsO oxypnictides|D. Bhoi,P. Mandal,P. Choudhury,S. Pandya,V. Ganesan###
(607516, 607516)
 We report the observation of an unusual B dependence of transversemagnetoresistance (MR) in the PrFeAsO, one of the parent compound of pnictidesuperconductors.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 14, 'T', 2]

PrFeAsO
###Quantm Magnetoresistance of the PrFeAsO oxypnictides|D. Bhoi,P. Mandal,P. Choudhury,S. Pandya,V. Ganesan###
(607536, 607539)
 We report the observation of an unusual B dependence of transversemagnetoresistance (MR) in the PrFeAsO, one of the parent compound of pnictidesuperconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 14, 'T', 2]

At
###Quantm Magnetoresistance of the PrFeAsO oxypnictides|D. Bhoi,P. Mandal,P. Choudhury,S. Pandya,V. Ganesan###
(607595, 607595)
 At low temperatures, MR increaseslinearly with B up to 14 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 14, 'T', 0]

B
###Quantm Magnetoresistance of the PrFeAsO oxypnictides|D. Bhoi,P. Mandal,P. Choudhury,S. Pandya,V. Ganesan###
(607612, 607612)
 At low temperatures, MR increaseslinearly with B up to 14 T.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 14, 'T', 0]

K
###Quantm Magnetoresistance of the PrFeAsO oxypnictides|D. Bhoi,P. Mandal,P. Choudhury,S. Pandya,V. Ganesan###
(607626, 607626)
 For T<missing VAR>geq40 K, MR vs B curve develops aweak curvature in the low-field region which indicates a crossover from Blinear to B2 dependence as Brightarrow0.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 14, 'T', 1]

B
###Quantm Magnetoresistance of the PrFeAsO oxypnictides|D. Bhoi,P. Mandal,P. Choudhury,S. Pandya,V. Ganesan###
(607634, 607634)
 For T<missing VAR>geq40 K, MR vs B curve develops aweak curvature in the low-field region which indicates a crossover from Blinear to B2 dependence as Brightarrow0.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 14, 'T', 1]

B
###Quantm Magnetoresistance of the PrFeAsO oxypnictides|D. Bhoi,P. Mandal,P. Choudhury,S. Pandya,V. Ganesan###
(607667, 607667)
 For T<missing VAR>geq40 K, MR vs B curve develops aweak curvature in the low-field region which indicates a crossover from Blinear to B2 dependence as Brightarrow0.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 14, 'T', 1]

B2
###Quantm Magnetoresistance of the PrFeAsO oxypnictides|D. Bhoi,P. Mandal,P. Choudhury,S. Pandya,V. Ganesan###
(607674, 607675)
 For T<missing VAR>geq40 K, MR vs B curve develops aweak curvature in the low-field region which indicates a crossover from Blinear to B2 dependence as Brightarrow0.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 14, 'T', 1]

B
###Quantm Magnetoresistance of the PrFeAsO oxypnictides|D. Bhoi,P. Mandal,P. Choudhury,S. Pandya,V. Ganesan###
(607681, 607681)
 For T<missing VAR>geq40 K, MR vs B curve develops aweak curvature in the low-field region which indicates a crossover from Blinear to B2 dependence as Brightarrow0.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 14, 'T', 1]

B
###Quantm Magnetoresistance of the PrFeAsO oxypnictides|D. Bhoi,P. Mandal,P. Choudhury,S. Pandya,V. Ganesan###
(607688, 607688)
 The B linear MR originatesfrom the Dirac cone states and has been explained by the quantum mechanicalmodel proposed by Abrikosov.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 14, 'T', 2]

K0.70Fe1.55Se1.01S0.99
###Upper critical fields and superconducting anisotropy of K0.70Fe1.55Se1.01S0.99 and K0.76Fe1.61Se0.96S1.04 single crystals|Hechang Lei,C. Petrovic###
(607756, 607763)
Upper critical fields and superconducting anisotropy of K0.70Fe1.55Se1.01S0.99 and K0.76Fe1.61Se0.96S1.04 single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23294117647058823,0,0,0.16470588235294117,0,0,0,0,0,0,0.3647058823529412,0,0,0,0,0,0,0,0.2376470588235294,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K0.76Fe1.61Se0.96S1.04
###Upper critical fields and superconducting anisotropy of K0.70Fe1.55Se1.01S0.99 and K0.76Fe1.61Se0.96S1.04 single crystals|Hechang Lei,C. Petrovic###
(607767, 607774)
Upper critical fields and superconducting anisotropy of K0.70Fe1.55Se1.01S0.99 and K0.76Fe1.61Se0.96S1.04 single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2379862700228833,0,0,0.17391304347826086,0,0,0,0,0,0,0.368421052631579,0,0,0,0,0,0,0,0.21967963386727687,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K0.70
###Upper critical fields and superconducting anisotropy of K0.70Fe1.55Se1.01S0.99 and K0.76Fe1.61Se0.96S1.04 single crystals|Hechang Lei,C. Petrovic###
(607802, 607803)
 We have investigated temperature and angular dependence of resistivity ofK0.70(7)Fe1.55(7)Se1.01(2)S0.99(2) and K0.76(5)Fe1.61(5)Se0.96(4)S1.04(5)single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe1.55
###Upper critical fields and superconducting anisotropy of K0.70Fe1.55Se1.01S0.99 and K0.76Fe1.61Se0.96S1.04 single crystals|Hechang Lei,C. Petrovic###
(607807, 607808)
 We have investigated temperature and angular dependence of resistivity ofK0.70(7)Fe1.55(7)Se1.01(2)S0.99(2) and K0.76(5)Fe1.61(5)Se0.96(4)S1.04(5)single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Se1.01
###Upper critical fields and superconducting anisotropy of K0.70Fe1.55Se1.01S0.99 and K0.76Fe1.61Se0.96S1.04 single crystals|Hechang Lei,C. Petrovic###
(607812, 607813)
 We have investigated temperature and angular dependence of resistivity ofK0.70(7)Fe1.55(7)Se1.01(2)S0.99(2) and K0.76(5)Fe1.61(5)Se0.96(4)S1.04(5)single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S0.99
###Upper critical fields and superconducting anisotropy of K0.70Fe1.55Se1.01S0.99 and K0.76Fe1.61Se0.96S1.04 single crystals|Hechang Lei,C. Petrovic###
(607817, 607818)
 We have investigated temperature and angular dependence of resistivity ofK0.70(7)Fe1.55(7)Se1.01(2)S0.99(2) and K0.76(5)Fe1.61(5)Se0.96(4)S1.04(5)single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K0.76
###Upper critical fields and superconducting anisotropy of K0.70Fe1.55Se1.01S0.99 and K0.76Fe1.61Se0.96S1.04 single crystals|Hechang Lei,C. Petrovic###
(607825, 607826)
 We have investigated temperature and angular dependence of resistivity ofK0.70(7)Fe1.55(7)Se1.01(2)S0.99(2) and K0.76(5)Fe1.61(5)Se0.96(4)S1.04(5)single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe1.61
###Upper critical fields and superconducting anisotropy of K0.70Fe1.55Se1.01S0.99 and K0.76Fe1.61Se0.96S1.04 single crystals|Hechang Lei,C. Petrovic###
(607830, 607831)
 We have investigated temperature and angular dependence of resistivity ofK0.70(7)Fe1.55(7)Se1.01(2)S0.99(2) and K0.76(5)Fe1.61(5)Se0.96(4)S1.04(5)single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Se0.96
###Upper critical fields and superconducting anisotropy of K0.70Fe1.55Se1.01S0.99 and K0.76Fe1.61Se0.96S1.04 single crystals|Hechang Lei,C. Petrovic###
(607835, 607836)
 We have investigated temperature and angular dependence of resistivity ofK0.70(7)Fe1.55(7)Se1.01(2)S0.99(2) and K0.76(5)Fe1.61(5)Se0.96(4)S1.04(5)single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S1.04
###Upper critical fields and superconducting anisotropy of K0.70Fe1.55Se1.01S0.99 and K0.76Fe1.61Se0.96S1.04 single crystals|Hechang Lei,C. Petrovic###
(607840, 607841)
 We have investigated temperature and angular dependence of resistivity ofK0.70(7)Fe1.55(7)Se1.01(2)S0.99(2) and K0.76(5)Fe1.61(5)Se0.96(4)S1.04(5)single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Upper critical fields and superconducting anisotropy of K0.70Fe1.55Se1.01S0.99 and K0.76Fe1.61Se0.96S1.04 single crystals|Hechang Lei,C. Petrovic###
(607885, 607885)
 The upper critical fields Hc2(T) for both field directionsdecrease with the increase in S content.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Upper critical fields and superconducting anisotropy of K0.70Fe1.55Se1.01S0.99 and K0.76Fe1.61Se0.96S1.04 single crystals|Hechang Lei,C. Petrovic###
(607959, 607959)
 The obtained anisotropy of Hc2(T) increaseswith S content, implying that S doping might decrease the dimensionality ofcertain Fermi surface parts, leading to stronger two dimensional character.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Upper critical fields and superconducting anisotropy of K0.70Fe1.55Se1.01S0.99 and K0.76Fe1.61Se0.96S1.04 single crystals|Hechang Lei,C. Petrovic###
(607968, 607968)
 The obtained anisotropy of Hc2(T) increaseswith S content, implying that S doping might decrease the dimensionality ofcertain Fermi surface parts, leading to stronger two dimensional character.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co/Ru
###Spin-memory loss at Co/Ru interfaces|Mazin A. Khasawneh,Carolin Klose,W. P. Pratt, Jr.,Norman O. Birge###
(608021, 608023)
Spin-memory loss at Co/Ru interfaces.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Co/Ru
###Spin-memory loss at Co/Ru interfaces|Mazin A. Khasawneh,Carolin Klose,W. P. Pratt, Jr.,Norman O. Birge###
(608046, 608048)
 We have determined the spin-memory-loss parameter, deltaCo/Ru, bymeasuring the transmission of spin-triplet and spin-singlet Cooper pairs acrossCo/Ru interfaces in Josephson junctions and by Current-Perpendicular-to-PlaneGiant Magnetoresistance (CPP-GMR) techniques.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Co/Ru
###Spin-memory loss at Co/Ru interfaces|Mazin A. Khasawneh,Carolin Klose,W. P. Pratt, Jr.,Norman O. Birge###
(608079, 608081)
 We have determined the spin-memory-loss parameter, deltaCo/Ru, bymeasuring the transmission of spin-triplet and spin-singlet Cooper pairs acrossCo/Ru interfaces in Josephson junctions and by Current-Perpendicular-to-PlaneGiant Magnetoresistance (CPP-GMR) techniques.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

CPP
###Spin-memory loss at Co/Ru interfaces|Mazin A. Khasawneh,Carolin Klose,W. P. Pratt, Jr.,Norman O. Birge###
(608109, 608111)
 We have determined the spin-memory-loss parameter, deltaCo/Ru, bymeasuring the transmission of spin-triplet and spin-singlet Cooper pairs acrossCo/Ru interfaces in Josephson junctions and by Current-Perpendicular-to-PlaneGiant Magnetoresistance (CPP-GMR) techniques.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co/Ru
###Spin-memory loss at Co/Ru interfaces|Mazin A. Khasawneh,Carolin Klose,W. P. Pratt, Jr.,Norman O. Birge###
(608138, 608140)
 The probability of spin-memoryloss at the Co/Ru interface is (1-exp(-deltaCo/Ru)).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Ru
###Spin-memory loss at Co/Ru interfaces|Mazin A. Khasawneh,Carolin Klose,W. P. Pratt, Jr.,Norman O. Birge###
(608155, 608155)
 The probability of spin-memoryloss at the Co/Ru interface is (1-exp(-deltaCo/Ru)).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CPP
###Spin-memory loss at Co/Ru interfaces|Mazin A. Khasawneh,Carolin Klose,W. P. Pratt, Jr.,Norman O. Birge###
(608164, 608166)
 From the CPP-MR, weobtain deltaCo/Ru  0.340.04-0.02 that is in good agreement withdeltaCo/Ru  0.35 pm 0.08 obtained from spin-triplet transmission.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co/Ru
###Spin-memory loss at Co/Ru interfaces|Mazin A. Khasawneh,Carolin Klose,W. P. Pratt, Jr.,Norman O. Birge###
(608178, 608180)
 From the CPP-MR, weobtain deltaCo/Ru  0.340.04-0.02 that is in good agreement withdeltaCo/Ru  0.35 pm 0.08 obtained from spin-triplet transmission.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Co/Ru
###Spin-memory loss at Co/Ru interfaces|Mazin A. Khasawneh,Carolin Klose,W. P. Pratt, Jr.,Norman O. Birge###
(608202, 608204)
 From the CPP-MR, weobtain deltaCo/Ru  0.340.04-0.02 that is in good agreement withdeltaCo/Ru  0.35 pm 0.08 obtained from spin-triplet transmission.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Co/Ru
###Spin-memory loss at Co/Ru interfaces|Mazin A. Khasawneh,Carolin Klose,W. P. Pratt, Jr.,Norman O. Birge###
(608239, 608241)
 Forspin-singlet transmission, we have deltaCo/Ru  0.64 pm 0.05 that isdifferent from that obtained from CPP-GMR and spin-triplet transmission.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

CPP
###Spin-memory loss at Co/Ru interfaces|Mazin A. Khasawneh,Carolin Klose,W. P. Pratt, Jr.,Norman O. Birge###
(608265, 608267)
 Forspin-singlet transmission, we have deltaCo/Ru  0.64 pm 0.05 that isdifferent from that obtained from CPP-GMR and spin-triplet transmission.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TiSe2
###Interplay between the Kondo effect and randomness: Griffiths phase in MxTiSe2 (M = Co, Ni, and Fe) single crystals|Minoru Sasaki,Akimasa Ohnishi,Takemasa Kikuchi,Mamoru Kitaura,Ki-Seok Kim,Heon-Jung Kim###
(608581, 608583)
Interplay between the Kondo effect and randomness Griffiths phase in MxTiSe2 (M<missing VAR>  Co, Ni, and Fe) single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Interplay between the Kondo effect and randomness: Griffiths phase in MxTiSe2 (M = Co, Ni, and Fe) single crystals|Minoru Sasaki,Akimasa Ohnishi,Takemasa Kikuchi,Mamoru Kitaura,Ki-Seok Kim,Heon-Jung Kim###
(608589, 608589)
Interplay between the Kondo effect and randomness Griffiths phase in MxTiSe2 (M<missing VAR>  Co, Ni, and Fe) single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Interplay between the Kondo effect and randomness: Griffiths phase in MxTiSe2 (M = Co, Ni, and Fe) single crystals|Minoru Sasaki,Akimasa Ohnishi,Takemasa Kikuchi,Mamoru Kitaura,Ki-Seok Kim,Heon-Jung Kim###
(608592, 608592)
Interplay between the Kondo effect and randomness Griffiths phase in MxTiSe2 (M<missing VAR>  Co, Ni, and Fe) single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Interplay between the Kondo effect and randomness: Griffiths phase in MxTiSe2 (M = Co, Ni, and Fe) single crystals|Minoru Sasaki,Akimasa Ohnishi,Takemasa Kikuchi,Mamoru Kitaura,Ki-Seok Kim,Heon-Jung Kim###
(608597, 608597)
Interplay between the Kondo effect and randomness Griffiths phase in MxTiSe2 (M<missing VAR>  Co, Ni, and Fe) single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TiSe2
###Interplay between the Kondo effect and randomness: Griffiths phase in MxTiSe2 (M = Co, Ni, and Fe) single crystals|Minoru Sasaki,Akimasa Ohnishi,Takemasa Kikuchi,Mamoru Kitaura,Ki-Seok Kim,Heon-Jung Kim###
(608629, 608631)
 We investigate the interplay between the Kondo effect and randomness inMxTiSe2 (M<missing VAR>  Co, Ni, and Fe) single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Interplay between the Kondo effect and randomness: Griffiths phase in MxTiSe2 (M = Co, Ni, and Fe) single crystals|Minoru Sasaki,Akimasa Ohnishi,Takemasa Kikuchi,Mamoru Kitaura,Ki-Seok Kim,Heon-Jung Kim###
(608637, 608637)
 We investigate the interplay between the Kondo effect and randomness inMxTiSe2 (M<missing VAR>  Co, Ni, and Fe) single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Interplay between the Kondo effect and randomness: Griffiths phase in MxTiSe2 (M = Co, Ni, and Fe) single crystals|Minoru Sasaki,Akimasa Ohnishi,Takemasa Kikuchi,Mamoru Kitaura,Ki-Seok Kim,Heon-Jung Kim###
(608640, 608640)
 We investigate the interplay between the Kondo effect and randomness inMxTiSe2 (M<missing VAR>  Co, Ni, and Fe) single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Interplay between the Kondo effect and randomness: Griffiths phase in MxTiSe2 (M = Co, Ni, and Fe) single crystals|Minoru Sasaki,Akimasa Ohnishi,Takemasa Kikuchi,Mamoru Kitaura,Ki-Seok Kim,Heon-Jung Kim###
(608645, 608645)
 We investigate the interplay between the Kondo effect and randomness inMxTiSe2 (M<missing VAR>  Co, Ni, and Fe) single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Interplay between the Kondo effect and randomness: Griffiths phase in MxTiSe2 (M = Co, Ni, and Fe) single crystals|Minoru Sasaki,Akimasa Ohnishi,Takemasa Kikuchi,Mamoru Kitaura,Ki-Seok Kim,Heon-Jung Kim###
(608693, 608693)
 Although the typical low-T<missing VAR> upturnof resistivity implies the Kondo effect around the single-ion Kondo temperatureoverlineT<missing VAR>K, positive magnetoresistance linearly proportional to themagnetic field and the power-law scaling of magnetization suggest the forbiddencoexistence between Kondo effect and time reversal symmetry breaking.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Interplay between the Kondo effect and randomness: Griffiths phase in MxTiSe2 (M = Co, Ni, and Fe) single crystals|Minoru Sasaki,Akimasa Ohnishi,Takemasa Kikuchi,Mamoru Kitaura,Ki-Seok Kim,Heon-Jung Kim###
(608803, 608803)
 Thispuzzling result is resolved by the Griffiths scenario - disorder-induceddistribution of the Kondo temperature produces an effective Kondo temperature(overlineT<missing VAR>K) much lower than overlineT<missing VAR>K, allowing unscreened localmoments above overlineT<missing VAR>K and resulting in non-Fermi liquid properties inMxTiSe2 below the percolation threshold (x<missing VAR><xc).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Interplay between the Kondo effect and randomness: Griffiths phase in MxTiSe2 (M = Co, Ni, and Fe) single crystals|Minoru Sasaki,Akimasa Ohnishi,Takemasa Kikuchi,Mamoru Kitaura,Ki-Seok Kim,Heon-Jung Kim###
(608814, 608814)
 Thispuzzling result is resolved by the Griffiths scenario - disorder-induceddistribution of the Kondo temperature produces an effective Kondo temperature(overlineT<missing VAR>K) much lower than overlineT<missing VAR>K, allowing unscreened localmoments above overlineT<missing VAR>K and resulting in non-Fermi liquid properties inMxTiSe2 below the percolation threshold (x<missing VAR><xc).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Interplay between the Kondo effect and randomness: Griffiths phase in MxTiSe2 (M = Co, Ni, and Fe) single crystals|Minoru Sasaki,Akimasa Ohnishi,Takemasa Kikuchi,Mamoru Kitaura,Ki-Seok Kim,Heon-Jung Kim###
(608830, 608830)
 Thispuzzling result is resolved by the Griffiths scenario - disorder-induceddistribution of the Kondo temperature produces an effective Kondo temperature(overlineT<missing VAR>K) much lower than overlineT<missing VAR>K, allowing unscreened localmoments above overlineT<missing VAR>K and resulting in non-Fermi liquid properties inMxTiSe2 below the percolation threshold (x<missing VAR><xc).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TiSe2
###Interplay between the Kondo effect and randomness: Griffiths phase in MxTiSe2 (M = Co, Ni, and Fe) single crystals|Minoru Sasaki,Akimasa Ohnishi,Takemasa Kikuchi,Mamoru Kitaura,Ki-Seok Kim,Heon-Jung Kim###
(608850, 608852)
 Thispuzzling result is resolved by the Griffiths scenario - disorder-induceddistribution of the Kondo temperature produces an effective Kondo temperature(overlineT<missing VAR>K) much lower than overlineT<missing VAR>K, allowing unscreened localmoments above overlineT<missing VAR>K and resulting in non-Fermi liquid properties inMxTiSe2 below the percolation threshold (x<missing VAR><xc).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sm0.55Sr0.45MnO3
###Mapping Colossal Magnetoresistance Phase Transitions with the Charge-Carrier Density Collapse Model|D. O. J. Green###
(609212, 609218)
 We explain the observed specific heat anomaly (and hence entropy change) inthe colossal magnetoresistive manganite Sm0.55Sr0.45MnO3, by introducing phaseseparation into the current carrier density collapse theory via the notion ofthe ferromagnetic volume fraction.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.09,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.11000000000000001,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sm0.55Sr0.45MnO3
###Mapping Colossal Magnetoresistance Phase Transitions with the Charge-Carrier Density Collapse Model|D. O. J. Green###
(609296, 609302)
 Within the same framework, we have also beenable to explain the observed electrical resistivity of Sm0.55Sr0.45MnO3 byusing appropriate expressions governing the scattering mechanisms far away fromthe transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.09,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.11000000000000001,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Electrolyte gate-controlled Kondo effect in SrTiO3|Menyoung Lee,J. R. Williams,Sipei Zhang,C. Daniel Frisbie,D. Goldhaber-Gordon###
(609425, 609428)
Electrolyte gate-controlled Kondo effect in SrTiO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 2, 'D', 3],[195.0, 3, 'd', 4]

SrTiO3
###Electrolyte gate-controlled Kondo effect in SrTiO3|Menyoung Lee,J. R. Williams,Sipei Zhang,C. Daniel Frisbie,D. Goldhaber-Gordon###
(609450, 609453)
 We report low-temperature, high-field magnetotransport measurements of SrTiO3gated by an ionic gel electrolyte.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 2, 'D', 2],[170.0, 3, 'd', 3]

SrTiO3
###Electrolyte gate-controlled Kondo effect in SrTiO3|Menyoung Lee,J. R. Williams,Sipei Zhang,C. Daniel Frisbie,D. Goldhaber-Gordon###
(609571, 609574)
 This observation, enabled by the wide tunabilityof the ionic gel-applied electric field, promotes the interpretation of theelectric field-effect induced 2D electron system in SrTiO3 as an admixture ofmagnetic Ti3 ions, i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 2, 'D', 0],[49.0, 3, 'd', 1]

Ti3
###Electrolyte gate-controlled Kondo effect in SrTiO3|Menyoung Lee,J. R. Williams,Sipei Zhang,C. Daniel Frisbie,D. Goldhaber-Gordon###
(609587, 609588)
 This observation, enabled by the wide tunabilityof the ionic gel-applied electric field, promotes the interpretation of theelectric field-effect induced 2D electron system in SrTiO3 as an admixture ofmagnetic Ti3 ions, i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 2, 'D', 0],[35.0, 3, 'd', 1]

Ti
###Electrolyte gate-controlled Kondo effect in SrTiO3|Menyoung Lee,J. R. Williams,Sipei Zhang,C. Daniel Frisbie,D. Goldhaber-Gordon###
(609622, 609622)
 localized and unpaired electrons, and delocalizedelectrons that partially fill the Ti 3d conduction band.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 2, 'D', 1],[1.0, 3, 'd', 0]

Pr0.5Ca0.5MnO3
###Switching magnetoresistance in vertically interfaced Pr0.5Ca0.5MnO3 grown on ZnO nanowires|R. V. K. Mangalam,Z. Zhang,T. Wu,W. Prellier###
(609868, 609874)
Switching magnetoresistance in vertically interfaced Pr0.5Ca0.5MnO3 grown on ZnO nanowires.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZnO
###Switching magnetoresistance in vertically interfaced Pr0.5Ca0.5MnO3 grown on ZnO nanowires|R. V. K. Mangalam,Z. Zhang,T. Wu,W. Prellier###
(609880, 609881)
Switching magnetoresistance in vertically interfaced Pr0.5Ca0.5MnO3 grown on ZnO nanowires.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pr0.5Ca0.5MnO3
###Switching magnetoresistance in vertically interfaced Pr0.5Ca0.5MnO3 grown on ZnO nanowires|R. V. K. Mangalam,Z. Zhang,T. Wu,W. Prellier###
(609912, 609918)
 The synthesis, morphology and magneto-transport properties ofnanostructure-engineered charge-ordered Pr0.5Ca0.5MnO3 grown on ZnO nanowiresare reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZnO
###Switching magnetoresistance in vertically interfaced Pr0.5Ca0.5MnO3 grown on ZnO nanowires|R. V. K. Mangalam,Z. Zhang,T. Wu,W. Prellier###
(609924, 609925)
 The synthesis, morphology and magneto-transport properties ofnanostructure-engineered charge-ordered Pr0.5Ca0.5MnO3 grown on ZnO nanowiresare reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Local Tunneling Magnetoresistance probed by Low-Temperature Scanning Laser Microscopy|Robert Werner,Mathias Weiler,Aleksandr Yu. Petrov,Bruce A. Davidson,Rudolf Gross,Reinhold Kleiner,Sebastian T. B. Goennenwein,Dieter Koelle###
(610162, 610162)
 Tunneling magnetoresistance (TMR) in a vertical manganite junction wasinvestigated by low-temperature scanning laser microscopy (LTSLM) allowing todetermine the local relative magnetization M<missing VAR> orientation of the two electrodesas a function of magnitude and orientation of the external magnetic field H.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Local Tunneling Magnetoresistance probed by Low-Temperature Scanning Laser Microscopy|Robert Werner,Mathias Weiler,Aleksandr Yu. Petrov,Bruce A. Davidson,Rudolf Gross,Reinhold Kleiner,Sebastian T. B. Goennenwein,Dieter Koelle###
(610219, 610219)
 Tunneling magnetoresistance (TMR) in a vertical manganite junction wasinvestigated by low-temperature scanning laser microscopy (LTSLM) allowing todetermine the local relative magnetization M<missing VAR> orientation of the two electrodesas a function of magnitude and orientation of the external magnetic field H.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(H)
###Local Tunneling Magnetoresistance probed by Low-Temperature Scanning Laser Microscopy|Robert Werner,Mathias Weiler,Aleksandr Yu. Petrov,Bruce A. Davidson,Rudolf Gross,Reinhold Kleiner,Sebastian T. B. Goennenwein,Dieter Koelle###
(610325, 610327)
 Calculated resistance R<missing VAR>mathrmcalc(H) based on thelocal M<missing VAR> configuration obtained by LTSLM is in quantitative agreement with R<missing VAR>(H)measured by magnetotransport.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Local Tunneling Magnetoresistance probed by Low-Temperature Scanning Laser Microscopy|Robert Werner,Mathias Weiler,Aleksandr Yu. Petrov,Bruce A. Davidson,Rudolf Gross,Reinhold Kleiner,Sebastian T. B. Goennenwein,Dieter Koelle###
(610348, 610348)
 Calculated resistance R<missing VAR>mathrmcalc(H) based on thelocal M<missing VAR> configuration obtained by LTSLM is in quantitative agreement with R<missing VAR>(H)measured by magnetotransport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(H)
###Local Tunneling Magnetoresistance probed by Low-Temperature Scanning Laser Microscopy|Robert Werner,Mathias Weiler,Aleksandr Yu. Petrov,Bruce A. Davidson,Rudolf Gross,Reinhold Kleiner,Sebastian T. B. Goennenwein,Dieter Koelle###
(610363, 610365)
 Calculated resistance R<missing VAR>mathrmcalc(H) based on thelocal M<missing VAR> configuration obtained by LTSLM is in quantitative agreement with R<missing VAR>(H)measured by magnetotransport.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Microwave-induced DC Signal in a Permalloy Thin Strip at Low Applied Magnetic Field|Ziqian Wang,Lujun Huang,Xiaofeng Zhu,Xiaoshuang Chen,Wei Lu###
(610388, 610388)
Microwave-induced D<missing VAR>C Signal in a Permalloy Thin Strip at Low Applied Magnetic Field.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 10, 'gigahertz', 2]

C
###Microwave-induced DC Signal in a Permalloy Thin Strip at Low Applied Magnetic Field|Ziqian Wang,Lujun Huang,Xiaofeng Zhu,Xiaoshuang Chen,Wei Lu###
(610460, 610460)
 A series of D<missing VAR>Cvoltages, which contain ferromagnetic resonance or spin wave resonance signals,were measured by inducing microwave frequencies greater than 10 gigahertz.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 10, 'gigahertz', 0]

C
###Microwave-induced DC Signal in a Permalloy Thin Strip at Low Applied Magnetic Field|Ziqian Wang,Lujun Huang,Xiaofeng Zhu,Xiaoshuang Chen,Wei Lu###
(610554, 610554)
 Based on the theory of D<missing VAR>C effects inferromagnetic resonance and the experimental data of anisotropicmagnetoresistance, a quantitative model was proposed.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 10, 'gigahertz', 2]

SI
###A Superconducting Gap in an Insulator|D. Sherman,G. Kopnov,D. Shahar,A. Frydman###
(610732, 610733)
 Two films on both sides of the disorder inducedsuperconductor to insulator transition (SIT) show the same energy gap scale atlow temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SI
###A Superconducting Gap in an Insulator|D. Sherman,G. Kopnov,D. Shahar,A. Frydman###
(610837, 610838)
 The results provide useful information for understanding thenature of the insulating state in the disorder induced SIT<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SiO2(Co)
###Spintronic devices on the base of magnetic nanostructures|L. V. Lutsev,A. I. Stognij,N. N. Novitskii,A. S. Shulenkov###
(610904, 610909)
 Two types of spintronic devices on the base of magnetic nanostructurescontaining silicon dioxide films with cobalt nanoparticles SiO2(Co) on GaAssubstrate - magnetic sensors and field-effect transistor governed by appliedmagnetic field - are studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Spintronic devices on the base of magnetic nanostructures|L. V. Lutsev,A. I. Stognij,N. N. Novitskii,A. S. Shulenkov###
(610913, 610914)
 Two types of spintronic devices on the base of magnetic nanostructurescontaining silicon dioxide films with cobalt nanoparticles SiO2(Co) on GaAssubstrate - magnetic sensors and field-effect transistor governed by appliedmagnetic field - are studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Spintronic devices on the base of magnetic nanostructures|L. V. Lutsev,A. I. Stognij,N. N. Novitskii,A. S. Shulenkov###
(610996, 610997)
 This effect manifests itself in avalanche suppressionby the magnetic field in GaAs near the SiO2(Co)/GaAs interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SiO2(Co)/GaAs
###Spintronic devices on the base of magnetic nanostructures|L. V. Lutsev,A. I. Stognij,N. N. Novitskii,A. S. Shulenkov###
(611003, 611011)
 This effect manifests itself in avalanche suppressionby the magnetic field in GaAs near the SiO2(Co)/GaAs interface.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

SiO2(Co)
###Spintronic devices on the base of magnetic nanostructures|L. V. Lutsev,A. I. Stognij,N. N. Novitskii,A. S. Shulenkov###
(611027, 611032)
 Field-effecttransistor contains the SiO2(Co) film under gate.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Spintronic devices on the base of magnetic nanostructures|L. V. Lutsev,A. I. Stognij,N. N. Novitskii,A. S. Shulenkov###
(611093, 611093)
 It is found that the magneticfield action leads to great changes in electron mobility in the channel due tothe interaction between spins of Co nanoparticles and electron spins.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Spin polarized tunneling in MgO-based tunnel junctions with superconducting electrodes|Oliver Schebaum,Jagadeesh S. Moodera,Andy Thomas###
(611120, 611121)
Spin polarized tunneling in MgO-based tunnel junctions with superconducting electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Al
###Spin polarized tunneling in MgO-based tunnel junctions with superconducting electrodes|Oliver Schebaum,Jagadeesh S. Moodera,Andy Thomas###
(611159, 611159)
 We prepared magnetic tunnel junctions with one ferromagnetic and onesuperconducting Al-Si electrode.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Spin polarized tunneling in MgO-based tunnel junctions with superconducting electrodes|Oliver Schebaum,Jagadeesh S. Moodera,Andy Thomas###
(611161, 611161)
 We prepared magnetic tunnel junctions with one ferromagnetic and onesuperconducting Al-Si electrode.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Spin polarized tunneling in MgO-based tunnel junctions with superconducting electrodes|Oliver Schebaum,Jagadeesh S. Moodera,Andy Thomas###
(611181, 611181)
 Pure cobalt electrodes were compared with aCo-Fe-B alloy and the Heusler compound Co2FeAl.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Spin polarized tunneling in MgO-based tunnel junctions with superconducting electrodes|Oliver Schebaum,Jagadeesh S. Moodera,Andy Thomas###
(611183, 611183)
 Pure cobalt electrodes were compared with aCo-Fe-B alloy and the Heusler compound Co2FeAl.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Spin polarized tunneling in MgO-based tunnel junctions with superconducting electrodes|Oliver Schebaum,Jagadeesh S. Moodera,Andy Thomas###
(611185, 611185)
 Pure cobalt electrodes were compared with aCo-Fe-B alloy and the Heusler compound Co2FeAl.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co2FeAl
###Spin polarized tunneling in MgO-based tunnel junctions with superconducting electrodes|Oliver Schebaum,Jagadeesh S. Moodera,Andy Thomas###
(611197, 611200)
 Pure cobalt electrodes were compared with aCo-Fe-B alloy and the Heusler compound Co2FeAl.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Spin polarized tunneling in MgO-based tunnel junctions with superconducting electrodes|Oliver Schebaum,Jagadeesh S. Moodera,Andy Thomas###
(611309, 611309)
The junctions were post-annealed at different temperatures to investigate thesymmetry filtering mechanism responsible for the giant tunnelingmagnetoresistance ratios in Co-Fe-B/ MgO/ Co-Fe-B junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Spin polarized tunneling in MgO-based tunnel junctions with superconducting electrodes|Oliver Schebaum,Jagadeesh S. Moodera,Andy Thomas###
(611311, 611311)
The junctions were post-annealed at different temperatures to investigate thesymmetry filtering mechanism responsible for the giant tunnelingmagnetoresistance ratios in Co-Fe-B/ MgO/ Co-Fe-B junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Spin polarized tunneling in MgO-based tunnel junctions with superconducting electrodes|Oliver Schebaum,Jagadeesh S. Moodera,Andy Thomas###
(611313, 611313)
The junctions were post-annealed at different temperatures to investigate thesymmetry filtering mechanism responsible for the giant tunnelingmagnetoresistance ratios in Co-Fe-B/ MgO/ Co-Fe-B junctions.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Spin polarized tunneling in MgO-based tunnel junctions with superconducting electrodes|Oliver Schebaum,Jagadeesh S. Moodera,Andy Thomas###
(611316, 611317)
The junctions were post-annealed at different temperatures to investigate thesymmetry filtering mechanism responsible for the giant tunnelingmagnetoresistance ratios in Co-Fe-B/ MgO/ Co-Fe-B junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Spin polarized tunneling in MgO-based tunnel junctions with superconducting electrodes|Oliver Schebaum,Jagadeesh S. Moodera,Andy Thomas###
(611320, 611320)
The junctions were post-annealed at different temperatures to investigate thesymmetry filtering mechanism responsible for the giant tunnelingmagnetoresistance ratios in Co-Fe-B/ MgO/ Co-Fe-B junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Spin polarized tunneling in MgO-based tunnel junctions with superconducting electrodes|Oliver Schebaum,Jagadeesh S. Moodera,Andy Thomas###
(611322, 611322)
The junctions were post-annealed at different temperatures to investigate thesymmetry filtering mechanism responsible for the giant tunnelingmagnetoresistance ratios in Co-Fe-B/ MgO/ Co-Fe-B junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Spin polarized tunneling in MgO-based tunnel junctions with superconducting electrodes|Oliver Schebaum,Jagadeesh S. Moodera,Andy Thomas###
(611324, 611324)
The junctions were post-annealed at different temperatures to investigate thesymmetry filtering mechanism responsible for the giant tunnelingmagnetoresistance ratios in Co-Fe-B/ MgO/ Co-Fe-B junctions.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs/AlGaAs
###Phase of phonon-induced resistance oscillations in a high-mobility two-dimensional electron gas|A. T. Hatke,M. A. Zudov,L. N. Pfeiffer,K. W. West###
(611422, 611427)
 We report on experimental studies of magnetoresistance oscillations thatoriginate from the resonant interaction of two-dimensional electrons withthermal transverse-acoustic phonons in very high-mobility GaAs/AlGaAs quantumwells.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

La2-xSr
###Memory Effects in the Charge Response of Lightly Doped La_{2-x}Sr_{x}CuO_{4}|I. Raičević,Dragana Popović,C. Panagopoulos,T. Sasagawa###
(611589, 611593)
Memory Effects in the Charge Response of Lightly Doped La2-xSrx<missing VAR>CuO4.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

CuO4
###Memory Effects in the Charge Response of Lightly Doped La_{2-x}Sr_{x}CuO_{4}|I. Raičević,Dragana Popović,C. Panagopoulos,T. Sasagawa###
(611595, 611597)
Memory Effects in the Charge Response of Lightly Doped La2-xSrx<missing VAR>CuO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La1.97Sr0.03CuO4
###Memory Effects in the Charge Response of Lightly Doped La_{2-x}Sr_{x}CuO_{4}|I. Raičević,Dragana Popović,C. Panagopoulos,T. Sasagawa###
(611622, 611628)
 The in-plane magnetoresistance (MR) of a single crystalLa1.97Sr0.03CuO4 has been studied at low temperatures T<missing VAR> using severalexperimental protocols.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0.004285714285714286,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2814285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Memory Effects in the Charge Response of Lightly Doped La_{2-x}Sr_{x}CuO_{4}|I. Raičević,Dragana Popović,C. Panagopoulos,T. Sasagawa###
(611654, 611654)
 At T<missing VAR> well below the spin-glass transition temperature,the MR becomes positive and exhibits several glassy features, such as historydependence, memory and hysteresis.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La2-xSr
###History dependent magnetoresistance in lightly doped La_{2-x}Sr_{x}CuO_{4} thin films|Xiaoyan Shi,Dragana Popović,C. Panagopoulos,G. Logvenov,A. T. Bollinger,I. Božović###
(611815, 611819)
History dependent magnetoresistance in lightly doped La2-xSrx<missing VAR>CuO4 thin films.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[71.0, 9, 'T', 1],[102.0, 0.05, ',', 2]

CuO4
###History dependent magnetoresistance in lightly doped La_{2-x}Sr_{x}CuO_{4} thin films|Xiaoyan Shi,Dragana Popović,C. Panagopoulos,G. Logvenov,A. T. Bollinger,I. Božović###
(611821, 611823)
History dependent magnetoresistance in lightly doped La2-xSrx<missing VAR>CuO4 thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 9, 'T', 1],[98.0, 0.05, ',', 2]

La2-xSr
###History dependent magnetoresistance in lightly doped La_{2-x}Sr_{x}CuO_{4} thin films|Xiaoyan Shi,Dragana Popović,C. Panagopoulos,G. Logvenov,A. T. Bollinger,I. Božović###
(611850, 611854)
 The in-plane magnetoresistance (MR) in atomically smoothLa2-xSrx<missing VAR>CuO4 thin films grown by molecular-beam-epitaxy was measuredin magnetic fields B up to 9 T over a wide range of temperatures T<missing VAR>.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[36.0, 9, 'T', 0],[67.0, 0.05, ',', 1]

CuO4
###History dependent magnetoresistance in lightly doped La_{2-x}Sr_{x}CuO_{4} thin films|Xiaoyan Shi,Dragana Popović,C. Panagopoulos,G. Logvenov,A. T. Bollinger,I. Božović###
(611856, 611858)
 The in-plane magnetoresistance (MR) in atomically smoothLa2-xSrx<missing VAR>CuO4 thin films grown by molecular-beam-epitaxy was measuredin magnetic fields B up to 9 T over a wide range of temperatures T<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 9, 'T', 0],[63.0, 0.05, ',', 1]

B
###History dependent magnetoresistance in lightly doped La_{2-x}Sr_{x}CuO_{4} thin films|Xiaoyan Shi,Dragana Popović,C. Panagopoulos,G. Logvenov,A. T. Bollinger,I. Božović###
(611885, 611885)
 The in-plane magnetoresistance (MR) in atomically smoothLa2-xSrx<missing VAR>CuO4 thin films grown by molecular-beam-epitaxy was measuredin magnetic fields B up to 9 T over a wide range of temperatures T<missing VAR>.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 9, 'T', 0],[36.0, 0.05, ',', 1]

K
###History dependent magnetoresistance in lightly doped La_{2-x}Sr_{x}CuO_{4} thin films|Xiaoyan Shi,Dragana Popović,C. Panagopoulos,G. Logvenov,A. T. Bollinger,I. Božović###
(611946, 611946)
 The films,with x<missing VAR>0.03 and x<missing VAR>0.05, are insulating, and the positive MR emerges at T<missing VAR><4 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 9, 'T', 1],[25.0, 0.05, ',', 0]

B
###History dependent magnetoresistance in lightly doped La_{2-x}Sr_{x}CuO_{4} thin films|Xiaoyan Shi,Dragana Popović,C. Panagopoulos,G. Logvenov,A. T. Bollinger,I. Božović###
(611984, 611984)
The positive MR exhibits glassy features, including history dependence andmemory, for all orientations of B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 9, 'T', 2],[63.0, 0.05, ',', 1]

FeNi/Cu/Co/FeMn
###Training and recovery behaviours of exchange bias in FeNi/Cu/Co/FeMn spin valves at high field sweep rates|D. Z. Yang,A. Kapelrud,M. Saxegaard,E. Wahlstrom###
(612068, 612076)
Training and recovery behaviours of exchange bias in FeNi/Cu/Co/FeMn spin valves at high field sweep rates.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[67.0, 1000, 'to', 1],[163.0, 1000, ',', 4],[165.0, 2000, 'and', 4],[166.0, 4000, 'Oe', 4],[186.0, 61.4, ',', 4],[189.0, 27.6, ',', 4],[193.0, 11.5, 'in', 4]

FeNi/Cu/Co/FeMn
###Training and recovery behaviours of exchange bias in FeNi/Cu/Co/FeMn spin valves at high field sweep rates|D. Z. Yang,A. Kapelrud,M. Saxegaard,E. Wahlstrom###
(612107, 612115)
 Training and recovery of exchange bias in FeNi/Cu/Co/FeMn spin valves havebeen studied by magnetoresistance curves with field sweep rates from 1000 to4800 Oe/s<missing VAR>.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[28.0, 1000, 'to', 0],[124.0, 1000, ',', 3],[126.0, 2000, 'and', 3],[127.0, 4000, 'Oe', 3],[147.0, 61.4, ',', 3],[150.0, 27.6, ',', 3],[154.0, 11.5, 'in', 3]

La0.7Ca0.3MnO3
###Paramagnetic Spin Correlations in Colossal Magnetoresistive La0.7Ca0.3MnO3|Joel S. Helton,Matthew B. Stone,Dmitry A. Shulyatev,Yakov M. Mukovskii,Jeffrey W. Lynn###
(612334, 612340)
Paramagnetic Spin Correlations in Colossal Magnetoresistive La0.7Ca0.3MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 1.03, 'Tc', 1],[190.0, 28, 'meV', 3]

La0.7Ca0.3MnO3
###Paramagnetic Spin Correlations in Colossal Magnetoresistive La0.7Ca0.3MnO3|Joel S. Helton,Matthew B. Stone,Dmitry A. Shulyatev,Yakov M. Mukovskii,Jeffrey W. Lynn###
(612376, 612382)
 Neutron spectroscopy measurements reveal dynamic spin correlations throughoutthe Brillouin zone in the colossal magnetoresistive material La0.7Ca0.3MnO3 at265 K (approximately 1.03 Tc).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 1.03, 'Tc', 0],[148.0, 28, 'meV', 2]

K
###Paramagnetic Spin Correlations in Colossal Magnetoresistive La0.7Ca0.3MnO3|Joel S. Helton,Matthew B. Stone,Dmitry A. Shulyatev,Yakov M. Mukovskii,Jeffrey W. Lynn###
(612389, 612389)
 Neutron spectroscopy measurements reveal dynamic spin correlations throughoutthe Brillouin zone in the colossal magnetoresistive material La0.7Ca0.3MnO3 at265 K (approximately 1.03 Tc).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 1.03, 'Tc', 0],[141.0, 28, 'meV', 2]

H
###Paramagnetic Spin Correlations in Colossal Magnetoresistive La0.7Ca0.3MnO3|Joel S. Helton,Matthew B. Stone,Dmitry A. Shulyatev,Yakov M. Mukovskii,Jeffrey W. Lynn###
(612481, 612481)
 The long-wavelength behavior is consistent withspin diffusion, yet an additional and unexpected component of the scattering isalso observed in low-energy constant-E<missing VAR> measurements, which takes the form ofridges of strong quasielastic scattering running along (H 0 0) and equivalentdirections.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 1.03, 'Tc', 1],[49.0, 28, 'meV', 1]

Ce2PdIn8
###Anomalous magnetotransport in the heavy-fermion superconductor Ce2PdIn8|Daniel Gnida,Marcin Matusiak,Dariusz Kaczorowski###
(612577, 612581)
Anomalous magnetotransport in the heavy-fermion superconductor Ce2PdIn8.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.09090909090909091,0,0,0.7272727272727273,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 8, 'K', 3]

Ce2PdIn8
###Anomalous magnetotransport in the heavy-fermion superconductor Ce2PdIn8|Daniel Gnida,Marcin Matusiak,Dariusz Kaczorowski###
(612602, 612606)
 The normal state behavior in the heavy-fermion superconductor Ce2PdIn8 hasbeen probed by means of Hall coefficient (R<missing VAR>H) and transverse magnetoresistivity(MR) measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.09090909090909091,0,0,0.7272727272727273,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 8, 'K', 2]

H
###Anomalous magnetotransport in the heavy-fermion superconductor Ce2PdIn8|Daniel Gnida,Marcin Matusiak,Dariusz Kaczorowski###
(612627, 612627)
 The normal state behavior in the heavy-fermion superconductor Ce2PdIn8 hasbeen probed by means of Hall coefficient (R<missing VAR>H) and transverse magnetoresistivity(MR) measurements.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 8, 'K', 2]

H
###Anomalous magnetotransport in the heavy-fermion superconductor Ce2PdIn8|Daniel Gnida,Marcin Matusiak,Dariusz Kaczorowski###
(612699, 612699)
 Anomalousnon-Fermi-liquid-like features, observed below 8 K in both R<missing VAR>H(T) and MR(T), arerelated to underlying quantum critical point, evidenced before in the specificheat and the electrical resistivity data.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 8, 'K', 0]

Ce2PdIn8
###Anomalous magnetotransport in the heavy-fermion superconductor Ce2PdIn8|Daniel Gnida,Marcin Matusiak,Dariusz Kaczorowski###
(612759, 612763)
 The magnetotransport in Ce2PdIn8 isshown to exhibit specific types of scaling that may appear universal forsimilar systems at the verge of magnetic instability.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.09090909090909091,0,0,0.7272727272727273,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 8, 'K', 1]

URu2Si2
###Angular Dependence of the High-Magnetic-Field Phase Diagram of URu2Si2|Gernot W. Scheerer,William Knafo,Dai Aoki,Jacques Flouquet###
(612838, 612842)
Angular Dependence of the High-Magnetic-Field Phase Diagram of URu2Si2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0
[43.0, 60, 'T', 1],[52.0, 1.4, 'K', 1]

H
###Angular Dependence of the High-Magnetic-Field Phase Diagram of URu2Si2|Gernot W. Scheerer,William Knafo,Dai Aoki,Jacques Flouquet###
(612858, 612858)
 We present measurements of the magnetoresistivity R<missing VAR>HOxx of URu2Si2 singlecrystals in high magnetic fields up to 60 T and at temperatures from 1.4 K to40 K.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 60, 'T', 0],[36.0, 1.4, 'K', 0]

URu2Si2
###Angular Dependence of the High-Magnetic-Field Phase Diagram of URu2Si2|Gernot W. Scheerer,William Knafo,Dai Aoki,Jacques Flouquet###
(612863, 612867)
 We present measurements of the magnetoresistivity R<missing VAR>HOxx of URu2Si2 singlecrystals in high magnetic fields up to 60 T and at temperatures from 1.4 K to40 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0
[18.0, 60, 'T', 0],[27.0, 1.4, 'K', 0]

K
###Angular Dependence of the High-Magnetic-Field Phase Diagram of URu2Si2|Gernot W. Scheerer,William Knafo,Dai Aoki,Jacques Flouquet###
(612901, 612901)
 We present measurements of the magnetoresistivity R<missing VAR>HOxx of URu2Si2 singlecrystals in high magnetic fields up to 60 T and at temperatures from 1.4 K to40 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 60, 'T', 0],[7.0, 1.4, 'K', 0]

Bi
###Dirac semimetal and topological phase transitions in A3Bi (A=Na, K, Rb)|Zhijun Wang,Yan Sun,Xingqiu Chen,Cesare Franchini,Gang Xu,Hongming Weng,Xi Dai,Zhong Fang###
(613075, 613075)
Dirac semimetal and topological phase transitions in A3Bi (ANa, K, Rb).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 3, 'D', 2]

Na
###Dirac semimetal and topological phase transitions in A3Bi (A=Na, K, Rb)|Zhijun Wang,Yan Sun,Xingqiu Chen,Cesare Franchini,Gang Xu,Hongming Weng,Xi Dai,Zhong Fang###
(613079, 613079)
Dirac semimetal and topological phase transitions in A3Bi (ANa, K, Rb).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 3, 'D', 2]

K
###Dirac semimetal and topological phase transitions in A3Bi (A=Na, K, Rb)|Zhijun Wang,Yan Sun,Xingqiu Chen,Cesare Franchini,Gang Xu,Hongming Weng,Xi Dai,Zhong Fang###
(613082, 613082)
Dirac semimetal and topological phase transitions in A3Bi (ANa, K, Rb).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 3, 'D', 2]

Rb
###Dirac semimetal and topological phase transitions in A3Bi (A=Na, K, Rb)|Zhijun Wang,Yan Sun,Xingqiu Chen,Cesare Franchini,Gang Xu,Hongming Weng,Xi Dai,Zhong Fang###
(613085, 613085)
Dirac semimetal and topological phase transitions in A3Bi (ANa, K, Rb).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 3, 'D', 2]

Bi
###Dirac semimetal and topological phase transitions in A3Bi (A=Na, K, Rb)|Zhijun Wang,Yan Sun,Xingqiu Chen,Cesare Franchini,Gang Xu,Hongming Weng,Xi Dai,Zhong Fang###
(613174, 613174)
 Here we show, based onthe first-principles calculations and effective model analysis, thatcrystalline A3Bi (ANa, K, Rb) are Dirac semimetals with bulk 3D Diracpoints protected by crystal symmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 3, 'D', 0]

Na
###Dirac semimetal and topological phase transitions in A3Bi (A=Na, K, Rb)|Zhijun Wang,Yan Sun,Xingqiu Chen,Cesare Franchini,Gang Xu,Hongming Weng,Xi Dai,Zhong Fang###
(613178, 613178)
 Here we show, based onthe first-principles calculations and effective model analysis, thatcrystalline A3Bi (ANa, K, Rb) are Dirac semimetals with bulk 3D Diracpoints protected by crystal symmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 3, 'D', 0]

K
###Dirac semimetal and topological phase transitions in A3Bi (A=Na, K, Rb)|Zhijun Wang,Yan Sun,Xingqiu Chen,Cesare Franchini,Gang Xu,Hongming Weng,Xi Dai,Zhong Fang###
(613181, 613181)
 Here we show, based onthe first-principles calculations and effective model analysis, thatcrystalline A3Bi (ANa, K, Rb) are Dirac semimetals with bulk 3D Diracpoints protected by crystal symmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 3, 'D', 0]

Rb
###Dirac semimetal and topological phase transitions in A3Bi (A=Na, K, Rb)|Zhijun Wang,Yan Sun,Xingqiu Chen,Cesare Franchini,Gang Xu,Hongming Weng,Xi Dai,Zhong Fang###
(613184, 613184)
 Here we show, based onthe first-principles calculations and effective model analysis, thatcrystalline A3Bi (ANa, K, Rb) are Dirac semimetals with bulk 3D Diracpoints protected by crystal symmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 3, 'D', 0]

Co2CrAl/NaNbO3/Co2CrAl
###Effect of interfacial strain on spin injection and spin polarization of Co2CrAl/NaNbO3/Co2CrAl magnetic tunneling junction|Yongqing Cai,Zhaoqiang Bai,Ming Yang,Yuan Ping Feng###
(613329, 613342)
Effect of interfacial strain on spin injection and spin polarization of Co2CrAl/NaNbO3/Co2CrAl magnetic tunneling junction.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Co2CrAl
###Effect of interfacial strain on spin injection and spin polarization of Co2CrAl/NaNbO3/Co2CrAl magnetic tunneling junction|Yongqing Cai,Zhaoqiang Bai,Ming Yang,Yuan Ping Feng###
(613411, 613414)
 First-principles calculations were carried out to investigate interfacialstrain effects on spin injection and spin polarization of a magnetic tunneljunction consisting of half-metallic full-Heusler alloy Co2CrAl andferroelectric perovskite NaNbO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NaNbO3
###Effect of interfacial strain on spin injection and spin polarization of Co2CrAl/NaNbO3/Co2CrAl magnetic tunneling junction|Yongqing Cai,Zhaoqiang Bai,Ming Yang,Yuan Ping Feng###
(613423, 613426)
 First-principles calculations were carried out to investigate interfacialstrain effects on spin injection and spin polarization of a magnetic tunneljunction consisting of half-metallic full-Heusler alloy Co2CrAl andferroelectric perovskite NaNbO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZnO
###Spin transport and spin dephasing in zinc oxide|Matthias Althammer,Eva-Maria Karrer-Müller,Sebastian T. B. Goennenwein,Matthias Opel,Rudolf Gross###
(613898, 613899)
 The wide bandgap semiconductor ZnO is interesting for spintronic applicationsbecause of its small spin-orbit coupling implying a large spin coherencelength.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 10.8, 'nm', 3],[175.0, 6.2, 'nm', 3],[197.0, 2.6, 'ns', 3],[205.0, 2.0, 'ns', 3],[214.0, 31, 'ps', 3]

TiN/Co/ZnO/Ni
###Spin transport and spin dephasing in zinc oxide|Matthias Althammer,Eva-Maria Karrer-Müller,Sebastian T. B. Goennenwein,Matthias Opel,Rudolf Gross###
(613958, 613966)
 Utilizing vertical spin valve devices with ferromagnetic electrodes(TiN/Co/ZnO/Ni/Au), we study the spin-polarized transport across ZnO inall-electrical experiments.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[89.0, 10.8, 'nm', 2],[108.0, 6.2, 'nm', 2],[130.0, 2.6, 'ns', 2],[138.0, 2.0, 'ns', 2],[147.0, 31, 'ps', 2]

Au
###Spin transport and spin dephasing in zinc oxide|Matthias Althammer,Eva-Maria Karrer-Müller,Sebastian T. B. Goennenwein,Matthias Opel,Rudolf Gross###
(613968, 613968)
 Utilizing vertical spin valve devices with ferromagnetic electrodes(TiN/Co/ZnO/Ni/Au), we study the spin-polarized transport across ZnO inall-electrical experiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 10.8, 'nm', 2],[106.0, 6.2, 'nm', 2],[128.0, 2.6, 'ns', 2],[136.0, 2.0, 'ns', 2],[145.0, 31, 'ps', 2]

ZnO
###Spin transport and spin dephasing in zinc oxide|Matthias Althammer,Eva-Maria Karrer-Müller,Sebastian T. B. Goennenwein,Matthias Opel,Rudolf Gross###
(613986, 613987)
 Utilizing vertical spin valve devices with ferromagnetic electrodes(TiN/Co/ZnO/Ni/Au), we study the spin-polarized transport across ZnO inall-electrical experiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 10.8, 'nm', 2],[87.0, 6.2, 'nm', 2],[109.0, 2.6, 'ns', 2],[117.0, 2.0, 'ns', 2],[126.0, 31, 'ps', 2]

K
###Spin transport and spin dephasing in zinc oxide|Matthias Althammer,Eva-Maria Karrer-Müller,Sebastian T. B. Goennenwein,Matthias Opel,Rudolf Gross###
(614059, 614059)
 Fitting the data yields spin diffusion lengths of 10.8nm (2K),10.7nm (10K), and 6.2nm (200K) in ZnO, corresponding to spin lifetimes of 2.6ns(2K), 2.0ns (10K), and 31ps (200K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 10.8, 'nm', 0],[15.0, 6.2, 'nm', 0],[37.0, 2.6, 'ns', 0],[45.0, 2.0, 'ns', 0],[54.0, 31, 'ps', 0]

K
###Spin transport and spin dephasing in zinc oxide|Matthias Althammer,Eva-Maria Karrer-Müller,Sebastian T. B. Goennenwein,Matthias Opel,Rudolf Gross###
(614069, 614069)
 Fitting the data yields spin diffusion lengths of 10.8nm (2K),10.7nm (10K), and 6.2nm (200K) in ZnO, corresponding to spin lifetimes of 2.6ns(2K), 2.0ns (10K), and 31ps (200K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 10.8, 'nm', 0],[5.0, 6.2, 'nm', 0],[27.0, 2.6, 'ns', 0],[35.0, 2.0, 'ns', 0],[44.0, 31, 'ps', 0]

K
###Spin transport and spin dephasing in zinc oxide|Matthias Althammer,Eva-Maria Karrer-Müller,Sebastian T. B. Goennenwein,Matthias Opel,Rudolf Gross###
(614078, 614078)
 Fitting the data yields spin diffusion lengths of 10.8nm (2K),10.7nm (10K), and 6.2nm (200K) in ZnO, corresponding to spin lifetimes of 2.6ns(2K), 2.0ns (10K), and 31ps (200K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 10.8, 'nm', 0],[4.0, 6.2, 'nm', 0],[18.0, 2.6, 'ns', 0],[26.0, 2.0, 'ns', 0],[35.0, 31, 'ps', 0]

ZnO
###Spin transport and spin dephasing in zinc oxide|Matthias Althammer,Eva-Maria Karrer-Müller,Sebastian T. B. Goennenwein,Matthias Opel,Rudolf Gross###
(614083, 614084)
 Fitting the data yields spin diffusion lengths of 10.8nm (2K),10.7nm (10K), and 6.2nm (200K) in ZnO, corresponding to spin lifetimes of 2.6ns(2K), 2.0ns (10K), and 31ps (200K).
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 10.8, 'nm', 0],[9.0, 6.2, 'nm', 0],[12.0, 2.6, 'ns', 0],[20.0, 2.0, 'ns', 0],[29.0, 31, 'ps', 0]

K
###Spin transport and spin dephasing in zinc oxide|Matthias Althammer,Eva-Maria Karrer-Müller,Sebastian T. B. Goennenwein,Matthias Opel,Rudolf Gross###
(614101, 614101)
 Fitting the data yields spin diffusion lengths of 10.8nm (2K),10.7nm (10K), and 6.2nm (200K) in ZnO, corresponding to spin lifetimes of 2.6ns(2K), 2.0ns (10K), and 31ps (200K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 10.8, 'nm', 0],[27.0, 6.2, 'nm', 0],[5.0, 2.6, 'ns', 0],[3.0, 2.0, 'ns', 0],[12.0, 31, 'ps', 0]

K
###Spin transport and spin dephasing in zinc oxide|Matthias Althammer,Eva-Maria Karrer-Müller,Sebastian T. B. Goennenwein,Matthias Opel,Rudolf Gross###
(614108, 614108)
 Fitting the data yields spin diffusion lengths of 10.8nm (2K),10.7nm (10K), and 6.2nm (200K) in ZnO, corresponding to spin lifetimes of 2.6ns(2K), 2.0ns (10K), and 31ps (200K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 10.8, 'nm', 0],[34.0, 6.2, 'nm', 0],[12.0, 2.6, 'ns', 0],[4.0, 2.0, 'ns', 0],[5.0, 31, 'ps', 0]

K
###Spin transport and spin dephasing in zinc oxide|Matthias Althammer,Eva-Maria Karrer-Müller,Sebastian T. B. Goennenwein,Matthias Opel,Rudolf Gross###
(614117, 614117)
 Fitting the data yields spin diffusion lengths of 10.8nm (2K),10.7nm (10K), and 6.2nm (200K) in ZnO, corresponding to spin lifetimes of 2.6ns(2K), 2.0ns (10K), and 31ps (200K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 10.8, 'nm', 0],[43.0, 6.2, 'nm', 0],[21.0, 2.6, 'ns', 0],[13.0, 2.0, 'ns', 0],[4.0, 31, 'ps', 0]

S
###Tunneling anisotropic magnetoresistance in single-molecule magnet junctions|Haiqing Xie,Qiang Wang,Hujun Jiao,J. -Q. Liang###
(614166, 614166)
 We theoretically investigate quantum transport through single-molecule magnet(SMM) junctions with ferromagnetic and normal-metal leads in the sequentialregime.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Tunneling anisotropic magnetoresistance in single-molecule magnet junctions|Haiqing Xie,Qiang Wang,Hujun Jiao,J. -Q. Liang###
(614272, 614272)
 The current obtained by means of the rate-equation gives rise to thetunneling anisotropic magnetoresistance (TAMR), which varies with the anglebetween the magnetization direction of ferromagnetic lead and the easy axis ofSMM.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Tunneling anisotropic magnetoresistance in single-molecule magnet junctions|Haiqing Xie,Qiang Wang,Hujun Jiao,J. -Q. Liang###
(614315, 614315)
 The angular dependence of TAMR can serve as a probe to determineexperimentally the easy axis of SMM.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Linear magnetoresistance in topological insulators: Quantum phase coherence effects at high temperatures|Badih A. Assaf,Thomas Cardinal,Peng Wei,Ferhat Katmis,Jagadeesh S. Moodera,Don Heiman###
(614416, 614416)
 In addition to the weak antilocalization cusp observed in themagnetoresistance (MR) of topological insulators at low temperatures and lowmagnetic fields, we find that the high-field MR in Bi2Te2Se is linear in field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 150, 'K', 1]

Bi2Te2Se
###Linear magnetoresistance in topological insulators: Quantum phase coherence effects at high temperatures|Badih A. Assaf,Thomas Cardinal,Peng Wei,Ferhat Katmis,Jagadeesh S. Moodera,Don Heiman###
(614483, 614487)
 In addition to the weak antilocalization cusp observed in themagnetoresistance (MR) of topological insulators at low temperatures and lowmagnetic fields, we find that the high-field MR in Bi2Te2Se is linear in field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 150, 'K', 1]

At
###Linear magnetoresistance in topological insulators: Quantum phase coherence effects at high temperatures|Badih A. Assaf,Thomas Cardinal,Peng Wei,Ferhat Katmis,Jagadeesh S. Moodera,Don Heiman###
(614499, 614499)
At fields up to B14T<missing VAR> the slope of this linear-like MR is nearly independent oftemperature over the range T<missing VAR>7 to 150K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 150, 'K', 0]

B14
###Linear magnetoresistance in topological insulators: Quantum phase coherence effects at high temperatures|Badih A. Assaf,Thomas Cardinal,Peng Wei,Ferhat Katmis,Jagadeesh S. Moodera,Don Heiman###
(614507, 614508)
At fields up to B14T<missing VAR> the slope of this linear-like MR is nearly independent oftemperature over the range T<missing VAR>7 to 150K.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 150, 'K', 0]

W
###Boundary Scattering in Ballistic Graphene|Satoru Masubuchi,Kazuyuki Iguchi,Takehiro Yamaguchi,Masahiro Onuki,Miho Arai,Kenji Watanabe,Takashi Taniguchi,Tomoki Machida###
(614710, 614710)
 We report magnetotransport measurements in ballistic graphene/hexagonal boronnitride mesoscopic wires where the charge carrier mean free path is comparableto wire width W.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 0.1, ',', 1],[111.0, 2, 'D', 2]

W
###Boundary Scattering in Ballistic Graphene|Satoru Masubuchi,Kazuyuki Iguchi,Takehiro Yamaguchi,Masahiro Onuki,Miho Arai,Kenji Watanabe,Takashi Taniguchi,Tomoki Machida###
(614759, 614759)
 Magnetoresistance curves show characteristic peak structureswhere the peak field scales with the ratio of cyclotron radius Rtextrmcand wire width W as W/Rtextrmc  0.9 pm 0.1, due to diffusive boundaryscattering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 0.1, ',', 0],[62.0, 2, 'D', 1]

W
###Boundary Scattering in Ballistic Graphene|Satoru Masubuchi,Kazuyuki Iguchi,Takehiro Yamaguchi,Masahiro Onuki,Miho Arai,Kenji Watanabe,Takashi Taniguchi,Tomoki Machida###
(614763, 614763)
 Magnetoresistance curves show characteristic peak structureswhere the peak field scales with the ratio of cyclotron radius Rtextrmcand wire width W as W/Rtextrmc  0.9 pm 0.1, due to diffusive boundaryscattering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 0.1, ',', 0],[58.0, 2, 'D', 1]

W
###Boundary Scattering in Ballistic Graphene|Satoru Masubuchi,Kazuyuki Iguchi,Takehiro Yamaguchi,Masahiro Onuki,Miho Arai,Kenji Watanabe,Takashi Taniguchi,Tomoki Machida###
(614806, 614806)
 The obtained proportionality constant between Rtextrmc andW differs from that of a classical semiconductor 2D electron system whereW/Rtextrmc  0.55.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 0.1, ',', 1],[15.0, 2, 'D', 0]

W
###Boundary Scattering in Ballistic Graphene|Satoru Masubuchi,Kazuyuki Iguchi,Takehiro Yamaguchi,Masahiro Onuki,Miho Arai,Kenji Watanabe,Takashi Taniguchi,Tomoki Machida###
(614830, 614830)
 The obtained proportionality constant between Rtextrmc andW differs from that of a classical semiconductor 2D electron system whereW/Rtextrmc  0.55.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 0.1, ',', 1],[9.0, 2, 'D', 0]

Mn2
###Colossal Magnetoresistance in the Mn2+ Oxypnictides NdMnAsO1-xFx|E. J. Wildman,J. M. S. Skakle,N. Emery,A. C. Mclaughlin###
(614856, 614857)
Colossal Magnetoresistance in the Mn2 Oxypnictides NdMnAsO1-xFx.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NdMnAsO1-x
###Colossal Magnetoresistance in the Mn2+ Oxypnictides NdMnAsO1-xFx|E. J. Wildman,J. M. S. Skakle,N. Emery,A. C. Mclaughlin###
(614861, 614867)
Colossal Magnetoresistance in the Mn2 Oxypnictides NdMnAsO1-xFx.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

C
###Colossal Magnetoresistance in the Mn2+ Oxypnictides NdMnAsO1-xFx|E. J. Wildman,J. M. S. Skakle,N. Emery,A. C. Mclaughlin###
(614876, 614876)
 Colossal magnetoresistance (CMR) is a rare phenomenon in which the electronicresistivity of a material can be decreased by orders of magnitude uponapplication of a magnetic field.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Colossal Magnetoresistance in the Mn2+ Oxypnictides NdMnAsO1-xFx|E. J. Wildman,J. M. S. Skakle,N. Emery,A. C. Mclaughlin###
(614972, 614972)
 Here we report CMR in theantiferromagnetic oxypnictide NdMnAsO1-xFx as a result of competition betweenan antiferromagnetic insulating phase with strong electron correlations and aparamagnetic semiconductor upon application of a magnetic field.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NdMnAsO1-x
###Colossal Magnetoresistance in the Mn2+ Oxypnictides NdMnAsO1-xFx|E. J. Wildman,J. M. S. Skakle,N. Emery,A. C. Mclaughlin###
(614985, 614991)
 Here we report CMR in theantiferromagnetic oxypnictide NdMnAsO1-xFx as a result of competition betweenan antiferromagnetic insulating phase with strong electron correlations and aparamagnetic semiconductor upon application of a magnetic field.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

C
###Colossal Magnetoresistance in the Mn2+ Oxypnictides NdMnAsO1-xFx|E. J. Wildman,J. M. S. Skakle,N. Emery,A. C. Mclaughlin###
(615052, 615052)
 The discoveryof CMR in antiferromagnetic Mn2 oxypnictide materials could open up an arrayof materials for further investigation and optimisation for technologicalapplications.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn2
###Colossal Magnetoresistance in the Mn2+ Oxypnictides NdMnAsO1-xFx|E. J. Wildman,J. M. S. Skakle,N. Emery,A. C. Mclaughlin###
(615060, 615061)
 The discoveryof CMR in antiferromagnetic Mn2 oxypnictide materials could open up an arrayof materials for further investigation and optimisation for technologicalapplications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Magnetoresistance from quenching of spin quantum correlation in organic semiconductors|Wei Si,Yao Yao,Xiaoyuan Hou,Chang-Qin Wu###
(615144, 615144)
 We present a theory of organic magnetoresistance (OMR) based on the quenchingof the quantum correlation between the carriers<missing VAR> spin and its local environmentwhen the incoherent hopping takes place.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Magnetoresistance from quenching of spin quantum correlation in organic semiconductors|Wei Si,Yao Yao,Xiaoyuan Hou,Chang-Qin Wu###
(615261, 615261)
 The resulting OMRexhibits a positive Lorentzian saturation component and a negative small-fieldcomponent, which are independent of model parameters.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HgTe
###Symmetries and weak (anti)localization of Dirac fermions in HgTe quantum wells|P. M. Ostrovsky,I. V. Gornyi,A. D. Mirlin###
(615362, 615363)
Symmetries and weak (anti)localization of Dirac fermions in HgTe quantum wells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 2, 'D', 1]

HgTe/HgCdTe
###Symmetries and weak (anti)localization of Dirac fermions in HgTe quantum wells|P. M. Ostrovsky,I. V. Gornyi,A. D. Mirlin###
(615391, 615396)
 We perform a symmetry analysis of a 2D electron system in HgTe/HgCdTe quantumwells in the situation when the chemical potential is outside of the gap, sothat the bulk of the quantum well is conducting.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[8.0, 2, 'D', 0]

In
###Symmetries and weak (anti)localization of Dirac fermions in HgTe quantum wells|P. M. Ostrovsky,I. V. Gornyi,A. D. Mirlin###
(615450, 615450)
 In order to investigatequantum transport properties of the system, we explore symmetries of thelow-energy Hamiltonian which is expressed in terms of two flavors of Diracfermions, and physically important symmetry-breaking mechanisms.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 2, 'D', 1]

Bi4O4S3
###Multi-Band Exotic Superconductivity in the New Superconductor Bi4O4S3|Sheng Li,Huan Yang,Jian Tao,Xiaxin Ding,Hai-Hu Wen###
(615600, 615605)
Multi-Band Exotic Superconductivity in the New Superconductor Bi4O4S3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.36363636363636365,0,0,0,0,0,0,0,0.2727272727272727,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.36363636363636365,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 4, 'K', 4]

Bi4O4S3
###Multi-Band Exotic Superconductivity in the New Superconductor Bi4O4S3|Sheng Li,Huan Yang,Jian Tao,Xiaxin Ding,Hai-Hu Wen###
(615634, 615639)
 Resistivity, Hall effect and magnetization have been investigated on the newsuperconductor Bi4O4S3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.36363636363636365,0,0,0,0,0,0,0,0.2727272727272727,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.36363636363636365,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 4, 'K', 3]

W
###Spin-orbit-coupling induced domain-wall resistance in diffusive ferromagnets|Zhe Yuan,Yi Liu,Anton A. Starikov,Paul J. Kelly,Arne Brataas###
(615903, 615903)
 We investigate diffusive transport through a number of domain wall (D<missing VAR>W)profiles of the important magnetic alloy Permalloy taking into accountsimultaneously noncollinearity, alloy disorder, and spin-orbit coupling fullyquantum mechanically, from first principles.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin-orbit-coupling induced domain-wall resistance in diffusive ferromagnets|Zhe Yuan,Yi Liu,Anton A. Starikov,Paul J. Kelly,Arne Brataas###
(615961, 615961)
 In addition to observing the knowneffects of magnetization mistracking and anisotropic magnetoresistance, wediscover a not-previously identified contribution to the resistance of a D<missing VAR>Wthat comes from spin-orbit-coupling-mediated spin-flip scattering in a textureddiffusive ferromagnet.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Spin-orbit-coupling induced domain-wall resistance in diffusive ferromagnets|Zhe Yuan,Yi Liu,Anton A. Starikov,Paul J. Kelly,Arne Brataas###
(616015, 616015)
 In addition to observing the knowneffects of magnetization mistracking and anisotropic magnetoresistance, wediscover a not-previously identified contribution to the resistance of a D<missing VAR>Wthat comes from spin-orbit-coupling-mediated spin-flip scattering in a textureddiffusive ferromagnet.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Spin-orbit-coupling induced domain-wall resistance in diffusive ferromagnets|Zhe Yuan,Yi Liu,Anton A. Starikov,Paul J. Kelly,Arne Brataas###
(616055, 616055)
 This adiabatic D<missing VAR>W resistance, which should exist in alldiffusive D<missing VAR>Ws, can be observed by varying the D<missing VAR>W width in a systematic fashionin suitably designed nanowires.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Spin-orbit-coupling induced domain-wall resistance in diffusive ferromagnets|Zhe Yuan,Yi Liu,Anton A. Starikov,Paul J. Kelly,Arne Brataas###
(616090, 616090)
 This adiabatic D<missing VAR>W resistance, which should exist in alldiffusive D<missing VAR>Ws, can be observed by varying the D<missing VAR>W width in a systematic fashionin suitably designed nanowires.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PdNi
###Transversal Magnetic Anisotropy in Nanoscale PdNi-Strips|D. Steininger,A. K. Huettel,M. Ziola,M. Kiessling,M. Sperl,G. Bayreuther,Ch. Strunk###
(616130, 616131)
Transversal Magnetic Anisotropy in Nanoscale PdNi-Strips.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PdNi
###Transversal Magnetic Anisotropy in Nanoscale PdNi-Strips|D. Steininger,A. K. Huettel,M. Ziola,M. Kiessling,M. Sperl,G. Bayreuther,Ch. Strunk###
(616144, 616145)
 We investigate submicron ferromagnetic PdNi thin-film strips intended ascontact electrodes for carbon nanotube-based spintronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pd0.3Ni0.7
###Transversal Magnetic Anisotropy in Nanoscale PdNi-Strips|D. Steininger,A. K. Huettel,M. Ziola,M. Kiessling,M. Sperl,G. Bayreuther,Ch. Strunk###
(616232, 616235)
 Contrary to the expectation from shape anisotropy, magnetichysteresis measurements of Pd0.3Ni0.7 on arrays containing strips of variouswidth point towards a magnetically easy axis in the sample plane, buttransversal to the strip direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pd0.3Ni0.7
###Transversal Magnetic Anisotropy in Nanoscale PdNi-Strips|D. Steininger,A. K. Huettel,M. Ziola,M. Kiessling,M. Sperl,G. Bayreuther,Ch. Strunk###
(616298, 616301)
 Anisotropic magnetoresistance measured onindividual Pd0.3Ni0.7 contact strips and magnetic force microscopy imagessubstantiate that conclusion.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Biaxial strain effect of spin dependent tunneling in MgO magnetic tunnel junctions|Ajeesh M. Sahadevan,Ravi K. Tiwari,Gopinadhan Kalon,Charanjit S. Bhatia,Mark Saeys,Hyunsoo Yang###
(616349, 616350)
Biaxial strain effect of spin dependent tunneling in MgO magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Biaxial strain effect of spin dependent tunneling in MgO magnetic tunnel junctions|Ajeesh M. Sahadevan,Ravi K. Tiwari,Gopinadhan Kalon,Charanjit S. Bhatia,Mark Saeys,Hyunsoo Yang###
(616401, 616401)
 We study the effect of strain on magnetic tunnel junctions (MTJ) induced by adiamond like carbon (DLC) film.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Biaxial strain effect of spin dependent tunneling in MgO magnetic tunnel junctions|Ajeesh M. Sahadevan,Ravi K. Tiwari,Gopinadhan Kalon,Charanjit S. Bhatia,Mark Saeys,Hyunsoo Yang###
(616440, 616440)
 The junction resistance as well as the tunnelmagnetoresistance (TMR) reduces with the DLC film.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Biaxial strain effect of spin dependent tunneling in MgO magnetic tunnel junctions|Ajeesh M. Sahadevan,Ravi K. Tiwari,Gopinadhan Kalon,Charanjit S. Bhatia,Mark Saeys,Hyunsoo Yang###
(616554, 616555)
 However, the conductance for the minority channel and for theanti-parallel configuration is significantly more sensitive to strain, whichdrastically increases transmission through a MgO tunnel barrier, therefore, theTMR ratio decreases with biaxial strain.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BiTeI
###Quantum oscillations and optical conductivity in Rashba spin-splitting BiTeI|C. Martin,E. D. Mun,H. Berger,V. S. Zapf,D. B. Tanner###
(616850, 616852)
Quantum oscillations and optical conductivity in Rashba spin-splitting BiTeI.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 65, 'T', 2]

H
###Quantum oscillations and optical conductivity in Rashba spin-splitting BiTeI|C. Martin,E. D. Mun,H. Berger,V. S. Zapf,D. B. Tanner###
(616873, 616873)
 We report the observation of Shubnikov-de Haas (SdH) oscillations in singlecrystals of the Rashba spin-splitting compound BiTeI, from both longitudinal(R<missing VAR>xx(B)) and Hall (R<missing VAR>xy(B)) magnetoresistance.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 65, 'T', 1]

BiTeI
###Quantum oscillations and optical conductivity in Rashba spin-splitting BiTeI|C. Martin,E. D. Mun,H. Berger,V. S. Zapf,D. B. Tanner###
(616897, 616899)
 We report the observation of Shubnikov-de Haas (SdH) oscillations in singlecrystals of the Rashba spin-splitting compound BiTeI, from both longitudinal(R<missing VAR>xx(B)) and Hall (R<missing VAR>xy(B)) magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 65, 'T', 1]

(B)
###Quantum oscillations and optical conductivity in Rashba spin-splitting BiTeI|C. Martin,E. D. Mun,H. Berger,V. S. Zapf,D. B. Tanner###
(616912, 616914)
 We report the observation of Shubnikov-de Haas (SdH) oscillations in singlecrystals of the Rashba spin-splitting compound BiTeI, from both longitudinal(R<missing VAR>xx(B)) and Hall (R<missing VAR>xy(B)) magnetoresistance.
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 65, 'T', 1]

(B)
###Quantum oscillations and optical conductivity in Rashba spin-splitting BiTeI|C. Martin,E. D. Mun,H. Berger,V. S. Zapf,D. B. Tanner###
(616924, 616926)
 We report the observation of Shubnikov-de Haas (SdH) oscillations in singlecrystals of the Rashba spin-splitting compound BiTeI, from both longitudinal(R<missing VAR>xx(B)) and Hall (R<missing VAR>xy(B)) magnetoresistance.
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 65, 'T', 1]

F
###Quantum oscillations and optical conductivity in Rashba spin-splitting BiTeI|C. Martin,E. D. Mun,H. Berger,V. S. Zapf,D. B. Tanner###
(616957, 616957)
 Under magnetic field upto 65 T, we resolved unambiguously only one frequency F  284.3pm 1.3 T<missing VAR>,corresponding to a Fermi momentum k<missing VAR>F  0.093pm 0.002AA-1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 65, 'T', 0]

F
###Quantum oscillations and optical conductivity in Rashba spin-splitting BiTeI|C. Martin,E. D. Mun,H. Berger,V. S. Zapf,D. B. Tanner###
(616980, 616980)
 Under magnetic field upto 65 T, we resolved unambiguously only one frequency F  284.3pm 1.3 T<missing VAR>,corresponding to a Fermi momentum k<missing VAR>F  0.093pm 0.002AA-1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 65, 'T', 0]

GaAs/AlGaAs
###Effect of rotation of the polarization of linearly polarized microwaves on the radiation-induced magnetoresistance oscillations|A. N. Ramanayaka,R. G. Mani,J. Iñarrea,W. Wegscheider###
(617412, 617417)
 Light-matter coupling is investigated by rotating, by an angle theta, thepolarization of linearly polarized microwaves with respect to the long-axis ofGaAs/AlGaAs Hall-bar electron devices.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

At
###Effect of rotation of the polarization of linearly polarized microwaves on the radiation-induced magnetoresistance oscillations|A. N. Ramanayaka,R. G. Mani,J. Iñarrea,W. Wegscheider###
(617428, 617428)
 At low microwave power, P, experimentsshow a strong sinusoidal variation in the diagonal resistance R<missing VAR>xx vs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Effect of rotation of the polarization of linearly polarized microwaves on the radiation-induced magnetoresistance oscillations|A. N. Ramanayaka,R. G. Mani,J. Iñarrea,W. Wegscheider###
(617437, 617437)
 At low microwave power, P, experimentsshow a strong sinusoidal variation in the diagonal resistance R<missing VAR>xx vs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(B)
###Effect of rotation of the polarization of linearly polarized microwaves on the radiation-induced magnetoresistance oscillations|A. N. Ramanayaka,R. G. Mani,J. Iñarrea,W. Wegscheider###
(617572, 617574)
 Surprisingly, thephase shift theta0 for maximal oscillatory R<missing VAR>xx response underphotoexcitation appears dependent upon the radiation-frequency f<missing VAR>, the extremumin question, and the magnetic field orientation or sgn(B).
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Theory of Strain-Controlled Magnetotransport and Stabilization of the Ferromagnetic Insulating Phase in Manganite Thin Films|Anamitra Mukherjee,William S. Cole,Patrick Woodward,Mohit Randeria,Nandini Trivedi###
(617681, 617681)
 We show that applying strain on half-doped manganites makes it possible totune the system to the proximity of a metal-insulator transition and therebygenerate a colossal magnetoresistance (CMR) response.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Theory of Strain-Controlled Magnetotransport and Stabilization of the Ferromagnetic Insulating Phase in Manganite Thin Films|Anamitra Mukherjee,William S. Cole,Patrick Woodward,Mohit Randeria,Nandini Trivedi###
(617706, 617706)
 This phase competitionnot only allows control of CMR in ferromagnetic metallic manganites but can beused to generate CMR response in otherwise robust insulators at half-doping.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Theory of Strain-Controlled Magnetotransport and Stabilization of the Ferromagnetic Insulating Phase in Manganite Thin Films|Anamitra Mukherjee,William S. Cole,Patrick Woodward,Mohit Randeria,Nandini Trivedi###
(617731, 617731)
 This phase competitionnot only allows control of CMR in ferromagnetic metallic manganites but can beused to generate CMR response in otherwise robust insulators at half-doping.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YPtSb
###Fabrication and characterization of the gapless half-Heusler YPtSb thin films|Wenhong Wang,Yin Du,Enke Liu,Zhongyuan Liu,Guangheng Wu###
(617863, 617865)
Fabrication and characterization of the gapless half-Heusler YPtSb thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 450, 'cm', 4],[142.0, 300, 'K', 4]

YPtSb
###Fabrication and characterization of the gapless half-Heusler YPtSb thin films|Wenhong Wang,Yin Du,Enke Liu,Zhongyuan Liu,Guangheng Wu###
(617876, 617878)
 Half-Heusler YPtSb thin films were fabricated by magnetron co-sputteringmethod on MgO-buffered SiO2/Si(001) substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 450, 'cm', 3],[129.0, 300, 'K', 3]

MgO
###Fabrication and characterization of the gapless half-Heusler YPtSb thin films|Wenhong Wang,Yin Du,Enke Liu,Zhongyuan Liu,Guangheng Wu###
(617901, 617902)
 Half-Heusler YPtSb thin films were fabricated by magnetron co-sputteringmethod on MgO-buffered SiO2/Si(001) substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 450, 'cm', 3],[105.0, 300, 'K', 3]

In
###Fabrication and characterization of the gapless half-Heusler YPtSb thin films|Wenhong Wang,Yin Du,Enke Liu,Zhongyuan Liu,Guangheng Wu###
(618037, 618037)
 In-plane magnetoresistance (MR) measurements with fields appliedalong and perpendicular to the current direction show opposite MR signs, whichsuggests the possible existence of the topological surface states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 450, 'cm', 1],[30.0, 300, 'K', 1]

Be
###Exchange Field-Mediated Magnetoresistance in the Correlated Insulator Phase of Be Films|T. J Liu,J. C. Prestigiacomo,Y. M. Xiong,P. W. Adams###
(618131, 618131)
Exchange Field-Mediated Magnetoresistance in the Correlated Insulator Phase of Be Films.
Featurization terminated normally.
0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 5, 'nm', 2]

EuS
###Exchange Field-Mediated Magnetoresistance in the Correlated Insulator Phase of Be Films|T. J Liu,J. C. Prestigiacomo,Y. M. Xiong,P. W. Adams###
(618202, 618203)
 Thin beryllium films are deposited ontoa 5 nm-thick layer of the ferromagnetic insulator EuS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 5, 'nm', 0]

H
###Exchange Field-Mediated Magnetoresistance in the Correlated Insulator Phase of Be Films|T. J Liu,J. C. Prestigiacomo,Y. M. Xiong,P. W. Adams###
(618222, 618222)
 This bilayer arrangementinduces an exchange field, Hex, of a few tesla in low resistance Be filmswith sheet resistance R<missing VAR>ll RQ, where RQh/e<missing VAR>2 is the quantum resistance.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 5, 'nm', 1]

Be
###Exchange Field-Mediated Magnetoresistance in the Correlated Insulator Phase of Be Films|T. J Liu,J. C. Prestigiacomo,Y. M. Xiong,P. W. Adams###
(618240, 618240)
 This bilayer arrangementinduces an exchange field, Hex, of a few tesla in low resistance Be filmswith sheet resistance R<missing VAR>ll RQ, where RQh/e<missing VAR>2 is the quantum resistance.
Featurization terminated normally.
0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 5, 'nm', 1]

H
###Exchange Field-Mediated Magnetoresistance in the Correlated Insulator Phase of Be Films|T. J Liu,J. C. Prestigiacomo,Y. M. Xiong,P. W. Adams###
(618283, 618283)
We show that Hex survives in very high resistance films and, in fact,appears to be relatively insensitive to the Be disorder.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 5, 'nm', 2]

Be
###Exchange Field-Mediated Magnetoresistance in the Correlated Insulator Phase of Be Films|T. J Liu,J. C. Prestigiacomo,Y. M. Xiong,P. W. Adams###
(618321, 618321)
We show that Hex survives in very high resistance films and, in fact,appears to be relatively insensitive to the Be disorder.
Featurization terminated normally.
0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 5, 'nm', 2]

Be
###Exchange Field-Mediated Magnetoresistance in the Correlated Insulator Phase of Be Films|T. J Liu,J. C. Prestigiacomo,Y. M. Xiong,P. W. Adams###
(618362, 618362)
 We exploit this factto produce a giant low-field magnetoresistance in the correlated insulatorphase of Be films with R<missing VAR>gg RQ.
Featurization terminated normally.
0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[174.0, 5, 'nm', 3]

Mn5Ge3
###Magnetic Mn5Ge3 nanocrystals embedded in crystalline Ge: a magnet/semiconductor hybrid synthesized by ion implantation|Shengqiang Zhou,Wenxu Zhang,A. Shalimov,Yutian Wang,Zhisuo Huang,D. Buerger,A. Mücklich,Wanli Zhang,H. Schmidt,M. Helm###
(618385, 618388)
Magnetic Mn5Ge3 nanocrystals embedded in crystalline Ge a magnet/semiconductor hybrid synthesized by ion implantation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.625,0,0,0,0,0,0,0.375,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[195.0, 3, 'd', 4]

Ge
###Magnetic Mn5Ge3 nanocrystals embedded in crystalline Ge: a magnet/semiconductor hybrid synthesized by ion implantation|Shengqiang Zhou,Wenxu Zhang,A. Shalimov,Yutian Wang,Zhisuo Huang,D. Buerger,A. Mücklich,Wanli Zhang,H. Schmidt,M. Helm###
(618398, 618398)
Magnetic Mn5Ge3 nanocrystals embedded in crystalline Ge a magnet/semiconductor hybrid synthesized by ion implantation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[185.0, 3, 'd', 4]

Mn5Ge3
###Magnetic Mn5Ge3 nanocrystals embedded in crystalline Ge: a magnet/semiconductor hybrid synthesized by ion implantation|Shengqiang Zhou,Wenxu Zhang,A. Shalimov,Yutian Wang,Zhisuo Huang,D. Buerger,A. Mücklich,Wanli Zhang,H. Schmidt,M. Helm###
(618425, 618428)
 The integration of ferromagnetic Mn5Ge3 with the Ge matrix is promising forspin injection in a silicon-compatible geometry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.625,0,0,0,0,0,0,0.375,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 3, 'd', 3]

Ge
###Magnetic Mn5Ge3 nanocrystals embedded in crystalline Ge: a magnet/semiconductor hybrid synthesized by ion implantation|Shengqiang Zhou,Wenxu Zhang,A. Shalimov,Yutian Wang,Zhisuo Huang,D. Buerger,A. Mücklich,Wanli Zhang,H. Schmidt,M. Helm###
(618434, 618434)
 The integration of ferromagnetic Mn5Ge3 with the Ge matrix is promising forspin injection in a silicon-compatible geometry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 3, 'd', 3]

In
###Magnetic Mn5Ge3 nanocrystals embedded in crystalline Ge: a magnet/semiconductor hybrid synthesized by ion implantation|Shengqiang Zhou,Wenxu Zhang,A. Shalimov,Yutian Wang,Zhisuo Huang,D. Buerger,A. Mücklich,Wanli Zhang,H. Schmidt,M. Helm###
(618460, 618460)
 In this paper, we report thepreparation of magnetic Mn5Ge3 nanocrystals embedded inside the Ge matrix by Mnions implantation at elevated temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 3, 'd', 2]

Mn5Ge3
###Magnetic Mn5Ge3 nanocrystals embedded in crystalline Ge: a magnet/semiconductor hybrid synthesized by ion implantation|Shengqiang Zhou,Wenxu Zhang,A. Shalimov,Yutian Wang,Zhisuo Huang,D. Buerger,A. Mücklich,Wanli Zhang,H. Schmidt,M. Helm###
(618480, 618483)
 In this paper, we report thepreparation of magnetic Mn5Ge3 nanocrystals embedded inside the Ge matrix by Mnions implantation at elevated temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.625,0,0,0,0,0,0,0.375,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 3, 'd', 2]

Ge
###Magnetic Mn5Ge3 nanocrystals embedded in crystalline Ge: a magnet/semiconductor hybrid synthesized by ion implantation|Shengqiang Zhou,Wenxu Zhang,A. Shalimov,Yutian Wang,Zhisuo Huang,D. Buerger,A. Mücklich,Wanli Zhang,H. Schmidt,M. Helm###
(618493, 618493)
 In this paper, we report thepreparation of magnetic Mn5Ge3 nanocrystals embedded inside the Ge matrix by Mnions implantation at elevated temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 3, 'd', 2]

Mn
###Magnetic Mn5Ge3 nanocrystals embedded in crystalline Ge: a magnet/semiconductor hybrid synthesized by ion implantation|Shengqiang Zhou,Wenxu Zhang,A. Shalimov,Yutian Wang,Zhisuo Huang,D. Buerger,A. Mücklich,Wanli Zhang,H. Schmidt,M. Helm###
(618499, 618499)
 In this paper, we report thepreparation of magnetic Mn5Ge3 nanocrystals embedded inside the Ge matrix by Mnions implantation at elevated temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 3, 'd', 2]

Mn5Ge3
###Magnetic Mn5Ge3 nanocrystals embedded in crystalline Ge: a magnet/semiconductor hybrid synthesized by ion implantation|Shengqiang Zhou,Wenxu Zhang,A. Shalimov,Yutian Wang,Zhisuo Huang,D. Buerger,A. Mücklich,Wanli Zhang,H. Schmidt,M. Helm###
(618537, 618540)
 By X<missing VAR>-ray diffraction andtransmission electron microscopy, we observe crystalline Mn5Ge3 with variablesize depending on the Mn ion fluence.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.625,0,0,0,0,0,0,0.375,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 3, 'd', 1]

Mn
###Magnetic Mn5Ge3 nanocrystals embedded in crystalline Ge: a magnet/semiconductor hybrid synthesized by ion implantation|Shengqiang Zhou,Wenxu Zhang,A. Shalimov,Yutian Wang,Zhisuo Huang,D. Buerger,A. Mücklich,Wanli Zhang,H. Schmidt,M. Helm###
(618555, 618555)
 By X<missing VAR>-ray diffraction andtransmission electron microscopy, we observe crystalline Mn5Ge3 with variablesize depending on the Mn ion fluence.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 3, 'd', 1]

Mn
###Magnetic Mn5Ge3 nanocrystals embedded in crystalline Ge: a magnet/semiconductor hybrid synthesized by ion implantation|Shengqiang Zhou,Wenxu Zhang,A. Shalimov,Yutian Wang,Zhisuo Huang,D. Buerger,A. Mücklich,Wanli Zhang,H. Schmidt,M. Helm###
(618570, 618570)
 The electronic structure of Mn in Mn5Ge3nanocrystals is 3d6 configuration, the same as in bulk Mn5Ge3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 3, 'd', 0]

Mn5Ge3
###Magnetic Mn5Ge3 nanocrystals embedded in crystalline Ge: a magnet/semiconductor hybrid synthesized by ion implantation|Shengqiang Zhou,Wenxu Zhang,A. Shalimov,Yutian Wang,Zhisuo Huang,D. Buerger,A. Mücklich,Wanli Zhang,H. Schmidt,M. Helm###
(618574, 618577)
 The electronic structure of Mn in Mn5Ge3nanocrystals is 3d6 configuration, the same as in bulk Mn5Ge3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.625,0,0,0,0,0,0,0.375,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 3, 'd', 0]

Mn5Ge3
###Magnetic Mn5Ge3 nanocrystals embedded in crystalline Ge: a magnet/semiconductor hybrid synthesized by ion implantation|Shengqiang Zhou,Wenxu Zhang,A. Shalimov,Yutian Wang,Zhisuo Huang,D. Buerger,A. Mücklich,Wanli Zhang,H. Schmidt,M. Helm###
(618599, 618602)
 The electronic structure of Mn in Mn5Ge3nanocrystals is 3d6 configuration, the same as in bulk Mn5Ge3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.625,0,0,0,0,0,0,0.375,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 3, 'd', 0]

As
###Spin polarization and magnetoresistance through a ferromagnetic barrier in bilayer graphene|Hosein Cheraghchi,Fatemeh Adinehvand###
(618887, 618887)
 As a result, a hugemagnetoresistance is achievable by altering the configurations of ferromagneticgraphene especially around the band gap.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Parallel-leaky capacitance equivalent circuit model for MgO magnetic tunnel junctions|Ajeesh M. Sahadevan,Kalon Gopinadhan,Charanjit S. Bhatia,Hyunsoo Yang###
(618953, 618954)
Parallel-leaky capacitance equivalent circuit model for MgO magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Parallel-leaky capacitance equivalent circuit model for MgO magnetic tunnel junctions|Ajeesh M. Sahadevan,Kalon Gopinadhan,Charanjit S. Bhatia,Hyunsoo Yang###
(618969, 618970)
 The capacitance of MgO based magnetic tunnel junctions (MTJs) has beenobserved to be magnetic field dependent.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(Cl)
###Parallel-leaky capacitance equivalent circuit model for MgO magnetic tunnel junctions|Ajeesh M. Sahadevan,Kalon Gopinadhan,Charanjit S. Bhatia,Hyunsoo Yang###
(619033, 619035)
 We propose an equivalent circuit forthe MTJs with a parallel-leaky capacitance (Cl) across the series combinationof geometric and interfacial capacitance.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cl
###Parallel-leaky capacitance equivalent circuit model for MgO magnetic tunnel junctions|Ajeesh M. Sahadevan,Kalon Gopinadhan,Charanjit S. Bhatia,Hyunsoo Yang###
(619080, 619080)
 The analysis of junctions withdifferent tunneling magnetoresistance values suggests higher Cl for low TMRjunctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Parallel-leaky capacitance equivalent circuit model for MgO magnetic tunnel junctions|Ajeesh M. Sahadevan,Kalon Gopinadhan,Charanjit S. Bhatia,Hyunsoo Yang###
(619137, 619137)
Fitting with Maxwell-Wagner capacitance model validates the R<missing VAR>C parallel networkmodel for MTJs and the extracted field dependent parameters match with theexperimental values.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

InSb
###Characterization of InSb quantum wells with atomic layer deposited gate dielectrics|M. M. Uddin,H. W. Liu,K. F. Yang,K. Nagase,T. D. Mishima,M. B. Santos,Y. Hirayama###
(619452, 619453)
Characterization of InSb quantum wells with atomic layer deposited gate dielectrics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[200.0, 6.5, 'x', 3]

InSb
###Characterization of InSb quantum wells with atomic layer deposited gate dielectrics|M. M. Uddin,H. W. Liu,K. F. Yang,K. Nagase,T. D. Mishima,M. B. Santos,Y. Hirayama###
(619486, 619487)
 We report magnetotransport measurements of a gated InSb quantum well (Q<missing VAR>W)with high quality Al2O3 dielectrics (40 nm thick) grown by atomic layerdeposition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 6.5, 'x', 2]

W
###Characterization of InSb quantum wells with atomic layer deposited gate dielectrics|M. M. Uddin,H. W. Liu,K. F. Yang,K. Nagase,T. D. Mishima,M. B. Santos,Y. Hirayama###
(619495, 619495)
 We report magnetotransport measurements of a gated InSb quantum well (Q<missing VAR>W)with high quality Al2O3 dielectrics (40 nm thick) grown by atomic layerdeposition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 6.5, 'x', 2]

Al2O3
###Characterization of InSb quantum wells with atomic layer deposited gate dielectrics|M. M. Uddin,H. W. Liu,K. F. Yang,K. Nagase,T. D. Mishima,M. B. Santos,Y. Hirayama###
(619505, 619508)
 We report magnetotransport measurements of a gated InSb quantum well (Q<missing VAR>W)with high quality Al2O3 dielectrics (40 nm thick) grown by atomic layerdeposition.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 6.5, 'x', 2]

Al2O3
###Characterization of InSb quantum wells with atomic layer deposited gate dielectrics|M. M. Uddin,H. W. Liu,K. F. Yang,K. Nagase,T. D. Mishima,M. B. Santos,Y. Hirayama###
(619576, 619579)
 A good interface between Al2O3and the top InSb layer ensures that the parallel channel is depleted atnegative Vg and the density of two-dimensional electrons in the Q<missing VAR>W is tuned byVg with a large ratio of 6.5x1014 m<missing VAR>-2V-1 but saturates at large negative Vg.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 6.5, 'x', 0]

InSb
###Characterization of InSb quantum wells with atomic layer deposited gate dielectrics|M. M. Uddin,H. W. Liu,K. F. Yang,K. Nagase,T. D. Mishima,M. B. Santos,Y. Hirayama###
(619588, 619589)
 A good interface between Al2O3and the top InSb layer ensures that the parallel channel is depleted atnegative Vg and the density of two-dimensional electrons in the Q<missing VAR>W is tuned byVg with a large ratio of 6.5x1014 m<missing VAR>-2V-1 but saturates at large negative Vg.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 6.5, 'x', 0]

W
###Characterization of InSb quantum wells with atomic layer deposited gate dielectrics|M. M. Uddin,H. W. Liu,K. F. Yang,K. Nagase,T. D. Mishima,M. B. Santos,Y. Hirayama###
(619633, 619633)
 A good interface between Al2O3and the top InSb layer ensures that the parallel channel is depleted atnegative Vg and the density of two-dimensional electrons in the Q<missing VAR>W is tuned byVg with a large ratio of 6.5x1014 m<missing VAR>-2V-1 but saturates at large negative Vg.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 6.5, 'x', 0]

V
###Characterization of InSb quantum wells with atomic layer deposited gate dielectrics|M. M. Uddin,H. W. Liu,K. F. Yang,K. Nagase,T. D. Mishima,M. B. Santos,Y. Hirayama###
(619659, 619659)
 A good interface between Al2O3and the top InSb layer ensures that the parallel channel is depleted atnegative Vg and the density of two-dimensional electrons in the Q<missing VAR>W is tuned byVg with a large ratio of 6.5x1014 m<missing VAR>-2V-1 but saturates at large negative Vg.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 6.5, 'x', 0]

W
###Characterization of InSb quantum wells with atomic layer deposited gate dielectrics|M. M. Uddin,H. W. Liu,K. F. Yang,K. Nagase,T. D. Mishima,M. B. Santos,Y. Hirayama###
(619698, 619698)
These findings are closely related to layer structures of the Q<missing VAR>W as suggestedby self-consistent Schrodinger-Poisson simulation and two-carrier model.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 6.5, 'x', 1]

Bi2Te3
###Magneto-resistance up to 60 Tesla in Topological Insulator Bi2Te3 Thin Films|S. X. Zhang,R. D. McDonald,A. Shekhter,Z. X. Bi,Y. Li,Q. X. Jia,S. T. Picraux###
(619749, 619752)
Magneto-resistance up to 60 Tesla in Topological Insulator Bi2Te3 Thin Films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 60, 'Tesla', 0],[96.0, 60, 'Tesla', 2]

Bi2Te3
###Magneto-resistance up to 60 Tesla in Topological Insulator Bi2Te3 Thin Films|S. X. Zhang,R. D. McDonald,A. Shekhter,Z. X. Bi,Y. Li,Q. X. Jia,S. T. Picraux###
(619775, 619778)
 We report magneto-transport studies of topological insulator Bi2Te3thin films grown by pulsed laser deposition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 60, 'Tesla', 1],[70.0, 60, 'Tesla', 1]

In
###Annealing induced colossal magnetocapacitance and colossal magnetoresistance in In-doped CdCr2S4|Y. M. Xie,Z. R. Yang,L. Li,L. H. Yin,X. B. Hu,Y. L. Huang,H. B. Jian,W. H. Song,Y. P. Sun,S. Q. Zhou,Y. H. Zhang###
(620017, 620017)
Annealing induced colossal magnetocapacitance and colossal magnetoresistance in In-doped CdCr2S4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CdCr2S4
###Annealing induced colossal magnetocapacitance and colossal magnetoresistance in In-doped CdCr2S4|Y. M. Xie,Z. R. Yang,L. Li,L. H. Yin,X. B. Hu,Y. L. Huang,H. B. Jian,W. H. Song,Y. P. Sun,S. Q. Zhou,Y. H. Zhang###
(620021, 620025)
Annealing induced colossal magnetocapacitance and colossal magnetoresistance in In-doped CdCr2S4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Annealing induced colossal magnetocapacitance and colossal magnetoresistance in In-doped CdCr2S4|Y. M. Xie,Z. R. Yang,L. Li,L. H. Yin,X. B. Hu,Y. L. Huang,H. B. Jian,W. H. Song,Y. P. Sun,S. Q. Zhou,Y. H. Zhang###
(620039, 620039)
 The correlation between colossal magnetocapacitance (CM<missing VAR>C) and colossalmagnetoresistance (CMR) in CdCr2S4 system has been revealed.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Annealing induced colossal magnetocapacitance and colossal magnetoresistance in In-doped CdCr2S4|Y. M. Xie,Z. R. Yang,L. Li,L. H. Yin,X. B. Hu,Y. L. Huang,H. B. Jian,W. H. Song,Y. P. Sun,S. Q. Zhou,Y. H. Zhang###
(620041, 620041)
 The correlation between colossal magnetocapacitance (CM<missing VAR>C) and colossalmagnetoresistance (CMR) in CdCr2S4 system has been revealed.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Annealing induced colossal magnetocapacitance and colossal magnetoresistance in In-doped CdCr2S4|Y. M. Xie,Z. R. Yang,L. Li,L. H. Yin,X. B. Hu,Y. L. Huang,H. B. Jian,W. H. Song,Y. P. Sun,S. Q. Zhou,Y. H. Zhang###
(620052, 620052)
 The correlation between colossal magnetocapacitance (CM<missing VAR>C) and colossalmagnetoresistance (CMR) in CdCr2S4 system has been revealed.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CdCr2S4
###Annealing induced colossal magnetocapacitance and colossal magnetoresistance in In-doped CdCr2S4|Y. M. Xie,Z. R. Yang,L. Li,L. H. Yin,X. B. Hu,Y. L. Huang,H. B. Jian,W. H. Song,Y. P. Sun,S. Q. Zhou,Y. H. Zhang###
(620059, 620063)
 The correlation between colossal magnetocapacitance (CM<missing VAR>C) and colossalmagnetoresistance (CMR) in CdCr2S4 system has been revealed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Annealing induced colossal magnetocapacitance and colossal magnetoresistance in In-doped CdCr2S4|Y. M. Xie,Z. R. Yang,L. Li,L. H. Yin,X. B. Hu,Y. L. Huang,H. B. Jian,W. H. Song,Y. P. Sun,S. Q. Zhou,Y. H. Zhang###
(620076, 620076)
 The CM<missing VAR>C is inducedin polycrystalline Cd0.97In0.03Cr2S4 by annealing in cadmium vapor.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Annealing induced colossal magnetocapacitance and colossal magnetoresistance in In-doped CdCr2S4|Y. M. Xie,Z. R. Yang,L. Li,L. H. Yin,X. B. Hu,Y. L. Huang,H. B. Jian,W. H. Song,Y. P. Sun,S. Q. Zhou,Y. H. Zhang###
(620078, 620078)
 The CM<missing VAR>C is inducedin polycrystalline Cd0.97In0.03Cr2S4 by annealing in cadmium vapor.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cd0.97In0.03Cr2S4
###Annealing induced colossal magnetocapacitance and colossal magnetoresistance in In-doped CdCr2S4|Y. M. Xie,Z. R. Yang,L. Li,L. H. Yin,X. B. Hu,Y. L. Huang,H. B. Jian,W. H. Song,Y. P. Sun,S. Q. Zhou,Y. H. Zhang###
(620089, 620096)
 The CM<missing VAR>C is inducedin polycrystalline Cd0.97In0.03Cr2S4 by annealing in cadmium vapor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13857142857142857,0.004285714285714286,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Annealing induced colossal magnetocapacitance and colossal magnetoresistance in In-doped CdCr2S4|Y. M. Xie,Z. R. Yang,L. Li,L. H. Yin,X. B. Hu,Y. L. Huang,H. B. Jian,W. H. Song,Y. P. Sun,S. Q. Zhou,Y. H. Zhang###
(620109, 620109)
 At the sametime, an insulator-metal transition and a concomitant CMR are observed near theCurie temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Annealing induced colossal magnetocapacitance and colossal magnetoresistance in In-doped CdCr2S4|Y. M. Xie,Z. R. Yang,L. Li,L. H. Yin,X. B. Hu,Y. L. Huang,H. B. Jian,W. H. Song,Y. P. Sun,S. Q. Zhou,Y. H. Zhang###
(620133, 620133)
 At the sametime, an insulator-metal transition and a concomitant CMR are observed near theCurie temperature.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Annealing induced colossal magnetocapacitance and colossal magnetoresistance in In-doped CdCr2S4|Y. M. Xie,Z. R. Yang,L. Li,L. H. Yin,X. B. Hu,Y. L. Huang,H. B. Jian,W. H. Song,Y. P. Sun,S. Q. Zhou,Y. H. Zhang###
(620151, 620151)
 In contrast, after the same annealing treatment, CdCr2S4displays a typical semiconductor behavior and does not show magnetic fielddependent dielectric and electric transport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CdCr2S4
###Annealing induced colossal magnetocapacitance and colossal magnetoresistance in In-doped CdCr2S4|Y. M. Xie,Z. R. Yang,L. Li,L. H. Yin,X. B. Hu,Y. L. Huang,H. B. Jian,W. H. Song,Y. P. Sun,S. Q. Zhou,Y. H. Zhang###
(620167, 620171)
 In contrast, after the same annealing treatment, CdCr2S4displays a typical semiconductor behavior and does not show magnetic fielddependent dielectric and electric transport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Annealing induced colossal magnetocapacitance and colossal magnetoresistance in In-doped CdCr2S4|Y. M. Xie,Z. R. Yang,L. Li,L. H. Yin,X. B. Hu,Y. L. Huang,H. B. Jian,W. H. Song,Y. P. Sun,S. Q. Zhou,Y. H. Zhang###
(620223, 620223)
 The simultaneousoccurrence or absence of CM<missing VAR>C and CMR effects implies that the CM<missing VAR>C in theannealed Cd0.97In0.03Cr2S4 could be explained qualitatively by a combination ofCMR and Maxwell-Wagner effect.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Annealing induced colossal magnetocapacitance and colossal magnetoresistance in In-doped CdCr2S4|Y. M. Xie,Z. R. Yang,L. Li,L. H. Yin,X. B. Hu,Y. L. Huang,H. B. Jian,W. H. Song,Y. P. Sun,S. Q. Zhou,Y. H. Zhang###
(620225, 620225)
 The simultaneousoccurrence or absence of CM<missing VAR>C and CMR effects implies that the CM<missing VAR>C in theannealed Cd0.97In0.03Cr2S4 could be explained qualitatively by a combination ofCMR and Maxwell-Wagner effect.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Annealing induced colossal magnetocapacitance and colossal magnetoresistance in In-doped CdCr2S4|Y. M. Xie,Z. R. Yang,L. Li,L. H. Yin,X. B. Hu,Y. L. Huang,H. B. Jian,W. H. Song,Y. P. Sun,S. Q. Zhou,Y. H. Zhang###
(620229, 620229)
 The simultaneousoccurrence or absence of CM<missing VAR>C and CMR effects implies that the CM<missing VAR>C in theannealed Cd0.97In0.03Cr2S4 could be explained qualitatively by a combination ofCMR and Maxwell-Wagner effect.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Annealing induced colossal magnetocapacitance and colossal magnetoresistance in In-doped CdCr2S4|Y. M. Xie,Z. R. Yang,L. Li,L. H. Yin,X. B. Hu,Y. L. Huang,H. B. Jian,W. H. Song,Y. P. Sun,S. Q. Zhou,Y. H. Zhang###
(620241, 620241)
 The simultaneousoccurrence or absence of CM<missing VAR>C and CMR effects implies that the CM<missing VAR>C in theannealed Cd0.97In0.03Cr2S4 could be explained qualitatively by a combination ofCMR and Maxwell-Wagner effect.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Annealing induced colossal magnetocapacitance and colossal magnetoresistance in In-doped CdCr2S4|Y. M. Xie,Z. R. Yang,L. Li,L. H. Yin,X. B. Hu,Y. L. Huang,H. B. Jian,W. H. Song,Y. P. Sun,S. Q. Zhou,Y. H. Zhang###
(620243, 620243)
 The simultaneousoccurrence or absence of CM<missing VAR>C and CMR effects implies that the CM<missing VAR>C in theannealed Cd0.97In0.03Cr2S4 could be explained qualitatively by a combination ofCMR and Maxwell-Wagner effect.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cd0.97In0.03Cr2S4
###Annealing induced colossal magnetocapacitance and colossal magnetoresistance in In-doped CdCr2S4|Y. M. Xie,Z. R. Yang,L. Li,L. H. Yin,X. B. Hu,Y. L. Huang,H. B. Jian,W. H. Song,Y. P. Sun,S. Q. Zhou,Y. H. Zhang###
(620252, 620259)
 The simultaneousoccurrence or absence of CM<missing VAR>C and CMR effects implies that the CM<missing VAR>C in theannealed Cd0.97In0.03Cr2S4 could be explained qualitatively by a combination ofCMR and Maxwell-Wagner effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13857142857142857,0.004285714285714286,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Annealing induced colossal magnetocapacitance and colossal magnetoresistance in In-doped CdCr2S4|Y. M. Xie,Z. R. Yang,L. Li,L. H. Yin,X. B. Hu,Y. L. Huang,H. B. Jian,W. H. Song,Y. P. Sun,S. Q. Zhou,Y. H. Zhang###
(620278, 620278)
 The simultaneousoccurrence or absence of CM<missing VAR>C and CMR effects implies that the CM<missing VAR>C in theannealed Cd0.97In0.03Cr2S4 could be explained qualitatively by a combination ofCMR and Maxwell-Wagner effect.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NdAlO3/SrTiO3
###Evolution of variable range hopping in strongly localized two dimensional electron gas at NdAlO3/SrTiO3 (100) heterointerfaces|A. Annadi,A. Putra,A. Srivastava,X. Wang,Z. Huang,Z. Q. Liu,T. Venkatesan,Ariando###
(620325, 620333)
Evolution of variable range hopping in strongly localized two dimensional electron gas at NdAlO3/SrTiO3 (100) heterointerfaces.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

NdAlO3/SrTiO3
###Evolution of variable range hopping in strongly localized two dimensional electron gas at NdAlO3/SrTiO3 (100) heterointerfaces|A. Annadi,A. Putra,A. Srivastava,X. Wang,Z. Huang,Z. Q. Liu,T. Venkatesan,Ariando###
(620367, 620375)
 We report evolution of the two-dimensional electron gas behavior at theNdAlO3/SrTiO3 heterointerfaces with varying thicknesses of the NdAlO3overlayer.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

NdAlO3
###Evolution of variable range hopping in strongly localized two dimensional electron gas at NdAlO3/SrTiO3 (100) heterointerfaces|A. Annadi,A. Putra,A. Srivastava,X. Wang,Z. Huang,Z. Q. Liu,T. Venkatesan,Ariando###
(620389, 620392)
 We report evolution of the two-dimensional electron gas behavior at theNdAlO3/SrTiO3 heterointerfaces with varying thicknesses of the NdAlO3overlayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NdAlO3
###Evolution of variable range hopping in strongly localized two dimensional electron gas at NdAlO3/SrTiO3 (100) heterointerfaces|A. Annadi,A. Putra,A. Srivastava,X. Wang,Z. Huang,Z. Q. Liu,T. Venkatesan,Ariando###
(620408, 620411)
 The samples with a thicker NdAlO3 show strong localizations at lowtemperatures and the degree of localization is found to increase with theNdAlO3 thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NdAlO3
###Evolution of variable range hopping in strongly localized two dimensional electron gas at NdAlO3/SrTiO3 (100) heterointerfaces|A. Annadi,A. Putra,A. Srivastava,X. Wang,Z. Huang,Z. Q. Liu,T. Venkatesan,Ariando###
(620449, 620452)
 The samples with a thicker NdAlO3 show strong localizations at lowtemperatures and the degree of localization is found to increase with theNdAlO3 thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NdAlO3/SrTiO3
###Evolution of variable range hopping in strongly localized two dimensional electron gas at NdAlO3/SrTiO3 (100) heterointerfaces|A. Annadi,A. Putra,A. Srivastava,X. Wang,Z. Huang,Z. Q. Liu,T. Venkatesan,Ariando###
(620557, 620565)
 We attribute this thickness dependence of the transportproperties of the NdAlO3/SrTiO3 interfaces to the interface strain induced bythe overlayers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Mn
###Spin Caloritronics in graphene with Mn|Alberto Torres,Matheus P. Lima,A. Fazzio,Antônio J. R. da Silva###
(620605, 620605)
Spin Caloritronics in graphene with Mn.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, -100, '%', 3],[175.0, 100, '%', 3]

Mn
###Spin Caloritronics in graphene with Mn|Alberto Torres,Matheus P. Lima,A. Fazzio,Antônio J. R. da Silva###
(620618, 620618)
 We show that graphene with Mn adatoms trapped at single vacancies featurespin-dependent Seebeck effect, thus enabling the use of this material for spincaloritronics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, -100, '%', 2],[162.0, 100, '%', 2]

Ni
###Anisotropic Magnetoresistance Effect: General Expression of AMR Ratio and Intuitive Explanation for Sign of AMR Ratio|Satoshi Kokado,Masakiyo Tsunoda###
(620978, 620978)
 Using the expression, we analyze the AMR ratios ofNi and a half-metallic ferromagnet.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Anisotropic Magnetoresistance Effect: General Expression of AMR Ratio and Intuitive Explanation for Sign of AMR Ratio|Satoshi Kokado,Masakiyo Tsunoda###
(621011, 621011)
 In addition, we give an intuitive explanationabout a relation between the sign of the AMR ratio and the s-d scatteringprocess.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnSi
###Discrete helicoidal states in chiral magnetic thin films|M. N. Wilson,E. A. Karhu,D. P. Lake,A. S. Quigley,A. N. Bogdanov,U. K. Rößler,T. L. Monchesky###
(621098, 621099)
 Magnetometry and magnetoresistance measurements in MnSi thin films andrigorous analytical solutions of the micromagnetic equations show that thefield-induced unwinding of confined helicoids occurs via discrete steps.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cd3As2
###Three Dimensional Dirac Semimetal and Quantum Transports in Cd3As2|Zhijun Wang,Hongming Weng,Quansheng Wu,Xi Dai,Zhong Fang###
(621295, 621298)
Three Dimensional Dirac Semimetal and Quantum Transports in Cd3As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 100, 'meV', 3],[197.0, 3, 'D', 4]

Cd3As2
###Three Dimensional Dirac Semimetal and Quantum Transports in Cd3As2|Zhijun Wang,Hongming Weng,Quansheng Wu,Xi Dai,Zhong Fang###
(621329, 621332)
 Based on the first-principles calculations, we recover the silent topologicalnature of Cd3As2, a well known semiconductor with high carrier mobility.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 100, 'meV', 2],[163.0, 3, 'D', 3]

Cd3As2
###Three Dimensional Dirac Semimetal and Quantum Transports in Cd3As2|Zhijun Wang,Hongming Weng,Quansheng Wu,Xi Dai,Zhong Fang###
(621510, 621513)
 We propose that the 3DDirac cones in the bulk of Cd3As2 can support sizable linear quantummagnetoresistance even up to room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 100, 'meV', 1],[15.0, 3, 'D', 0]

F
###Angular Preisach analysis of Hysteresis loops and FMR lineshapes of ferromagnetic nanowire arrays|C. Tannous,A. Ghaddar,J. Gieraltowski###
(621561, 621561)
Angular Preisach analysis of Hysteresis loops and FMR lineshapes of ferromagnetic nanowire arrays.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Angular Preisach analysis of Hysteresis loops and FMR lineshapes of ferromagnetic nanowire arrays|C. Tannous,A. Ghaddar,J. Gieraltowski###
(621647, 621647)
 When extended to Ferromagnetic Resonance(FMR) lineshapes, with same set of parameters extracted from the correspondinghysteresis loops, Preisach analysis shows that a different distribution ofinteractions or coercivities ought to be used in order to explain experimentalresults.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Angular Preisach analysis of Hysteresis loops and FMR lineshapes of ferromagnetic nanowire arrays|C. Tannous,A. Ghaddar,J. Gieraltowski###
(621738, 621738)
 Inspecting the behavior of hysteresis loops and FMR linewidth versusfield angle, we infer that angular dependence might be exploited in anglesensing devices that could compete with Anisotropic (AMR) or GiantMagnetoresistive (GMR) based devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Experimental test of the spin mixing interface conductivity concept|Mathias Weiler,Matthias Althammer,Michael Schreier,Johannes Lotze,Matthias Pernpeintner,Sibylle Meyer,Hans Huebl,Rudolf Gross,Akashdeep Kamra,Jiang Xiao,Yan-Ting Chen,HuJun Jiao,Gerrit E. W. Bauer,Sebastian T. B. Goennenwein###
(621908, 621908)
 We perform a quantitative, comparative study of the spin pumping, spinSeebeck and spin Hall magnetoresistance effects, all detected via the inversespin Hall effect in a series of over 20 yttrium iron garnet/Pt samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 20, 'yttrium', 0]

S
###Electrically-Detected ESR in Silicon Nanostructures Inserted in Microcavities|Nikolay Bagraev,Eduard Danilovskii,Wolfgang Gehlhoff,Dmitrii Gets,Leonid Klyachkin,Andrey Kudryavtsev,Roman Kuzmin,Anna Malyarenko,Vladimir Mashkov,Vladimir Romanov###
(622340, 622340)
 We present the first findings of the new electrically-detected electron spinresonance technique (EDESR), which reveal the point defects in the ultra-narrowsilicon quantum wells (Si-Q<missing VAR>W) confined by the superconductor delta-barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Electrically-Detected ESR in Silicon Nanostructures Inserted in Microcavities|Nikolay Bagraev,Eduard Danilovskii,Wolfgang Gehlhoff,Dmitrii Gets,Leonid Klyachkin,Andrey Kudryavtsev,Roman Kuzmin,Anna Malyarenko,Vladimir Mashkov,Vladimir Romanov###
(622371, 622371)
 We present the first findings of the new electrically-detected electron spinresonance technique (EDESR), which reveal the point defects in the ultra-narrowsilicon quantum wells (Si-Q<missing VAR>W) confined by the superconductor delta-barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Electrically-Detected ESR in Silicon Nanostructures Inserted in Microcavities|Nikolay Bagraev,Eduard Danilovskii,Wolfgang Gehlhoff,Dmitrii Gets,Leonid Klyachkin,Andrey Kudryavtsev,Roman Kuzmin,Anna Malyarenko,Vladimir Mashkov,Vladimir Romanov###
(622374, 622374)
 We present the first findings of the new electrically-detected electron spinresonance technique (EDESR), which reveal the point defects in the ultra-narrowsilicon quantum wells (Si-Q<missing VAR>W) confined by the superconductor delta-barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Electrically-Detected ESR in Silicon Nanostructures Inserted in Microcavities|Nikolay Bagraev,Eduard Danilovskii,Wolfgang Gehlhoff,Dmitrii Gets,Leonid Klyachkin,Andrey Kudryavtsev,Roman Kuzmin,Anna Malyarenko,Vladimir Mashkov,Vladimir Romanov###
(622485, 622485)
This technique allows the ESR identification without application of an externalcavity, as well as a high frequency source and recorder, and with measuring theonly response of the magnetoresistance, with internal G<missing VAR>Hz Josephson emissionwithin frameworks of the normal-mode coupling (NM<missing VAR>C) caused by the microcavitiesembedded in the Si-Q<missing VAR>W plane.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Electrically-Detected ESR in Silicon Nanostructures Inserted in Microcavities|Nikolay Bagraev,Eduard Danilovskii,Wolfgang Gehlhoff,Dmitrii Gets,Leonid Klyachkin,Andrey Kudryavtsev,Roman Kuzmin,Anna Malyarenko,Vladimir Mashkov,Vladimir Romanov###
(622487, 622487)
This technique allows the ESR identification without application of an externalcavity, as well as a high frequency source and recorder, and with measuring theonly response of the magnetoresistance, with internal G<missing VAR>Hz Josephson emissionwithin frameworks of the normal-mode coupling (NM<missing VAR>C) caused by the microcavitiesembedded in the Si-Q<missing VAR>W plane.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Electrically-Detected ESR in Silicon Nanostructures Inserted in Microcavities|Nikolay Bagraev,Eduard Danilovskii,Wolfgang Gehlhoff,Dmitrii Gets,Leonid Klyachkin,Andrey Kudryavtsev,Roman Kuzmin,Anna Malyarenko,Vladimir Mashkov,Vladimir Romanov###
(622505, 622505)
This technique allows the ESR identification without application of an externalcavity, as well as a high frequency source and recorder, and with measuring theonly response of the magnetoresistance, with internal G<missing VAR>Hz Josephson emissionwithin frameworks of the normal-mode coupling (NM<missing VAR>C) caused by the microcavitiesembedded in the Si-Q<missing VAR>W plane.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Electrically-Detected ESR in Silicon Nanostructures Inserted in Microcavities|Nikolay Bagraev,Eduard Danilovskii,Wolfgang Gehlhoff,Dmitrii Gets,Leonid Klyachkin,Andrey Kudryavtsev,Roman Kuzmin,Anna Malyarenko,Vladimir Mashkov,Vladimir Romanov###
(622508, 622508)
This technique allows the ESR identification without application of an externalcavity, as well as a high frequency source and recorder, and with measuring theonly response of the magnetoresistance, with internal G<missing VAR>Hz Josephson emissionwithin frameworks of the normal-mode coupling (NM<missing VAR>C) caused by the microcavitiesembedded in the Si-Q<missing VAR>W plane.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Effects of interface electric field on the magnetoresistance in spin device|T. Tanamoto,M. Ishikawa,T. Inokuchi,H. Sugiyama,Y. Saito###
(622665, 622665)
 We have alsocarried out spin injection and detection measurements using four-terminal Sidevices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaMnO3
###Unveiling the Origin of the Insulating Ferromagnetism in LaMnO3 Thin Film|Yusheng Hou,Hongjun Xiang,Xingao Gong###
(622787, 622790)
Unveiling the Origin of the Insulating Ferromagnetism in LaMnO3 Thin Film.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaMnO3
###Unveiling the Origin of the Insulating Ferromagnetism in LaMnO3 Thin Film|Yusheng Hou,Hongjun Xiang,Xingao Gong###
(622847, 622850)
 By combining genetic algorithm optimizations, first-principles calculationsand the double-exchange model studies, we have unveiled that the exoticinsulating ferromagnetism in LaMnO3 thin film originates from the previouslyunreported G<missing VAR>-type d3z2-r<missing VAR>2/dx2-y<missing VAR>2 orbital ordering.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaMnO3
###Unveiling the Origin of the Insulating Ferromagnetism in LaMnO3 Thin Film|Yusheng Hou,Hongjun Xiang,Xingao Gong###
(622952, 622955)
 Therefore, there exist two strain induced phase transitions in theLaMnO3 thin film, from the insulating A-type antiferromagnetic phase to theinsulating ferromagnetic phase and then to the metallic ferromagnetic phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin Excitations in Half-Doped Manganites|Ivon R. Buitrago,C. I. Ventura###
(623299, 623299)
 In particular, we focus on spin excitations in the CE<missing VAR> phaseoriginally proposed by Goodenough (Phys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 100, ',', 2],[69.0, 3, 'D', 3],[106.0, 2, 'D', 3]

C
###Spin Excitations in Half-Doped Manganites|Ivon R. Buitrago,C. I. Ventura###
(623318, 623318)
 In particular, we focus on spin excitations in the CE<missing VAR> phaseoriginally proposed by Goodenough (Phys.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 100, ',', 2],[50.0, 3, 'D', 3],[87.0, 2, 'D', 3]

La1
###Spin Excitations in Half-Doped Manganites|Ivon R. Buitrago,C. I. Ventura###
(623379, 623380)
 Using alocalized spin model we calculated magnons for 3D-perovskite compounds such asLa1-xMxMnO3, where M<missing VAR>Ca,Sr,Ba, and for their 2D-laminarcounterparts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 100, ',', 1],[11.0, 3, 'D', 0],[25.0, 2, 'D', 0]

MnO3
###Spin Excitations in Half-Doped Manganites|Ivon R. Buitrago,C. I. Ventura###
(623385, 623387)
 Using alocalized spin model we calculated magnons for 3D-perovskite compounds such asLa1-xMxMnO3, where M<missing VAR>Ca,Sr,Ba, and for their 2D-laminarcounterparts.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 100, ',', 1],[17.0, 3, 'D', 0],[18.0, 2, 'D', 0]

Ca
###Spin Excitations in Half-Doped Manganites|Ivon R. Buitrago,C. I. Ventura###
(623393, 623393)
 Using alocalized spin model we calculated magnons for 3D-perovskite compounds such asLa1-xMxMnO3, where M<missing VAR>Ca,Sr,Ba, and for their 2D-laminarcounterparts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 100, ',', 1],[25.0, 3, 'D', 0],[12.0, 2, 'D', 0]

Sr
###Spin Excitations in Half-Doped Manganites|Ivon R. Buitrago,C. I. Ventura###
(623395, 623395)
 Using alocalized spin model we calculated magnons for 3D-perovskite compounds such asLa1-xMxMnO3, where M<missing VAR>Ca,Sr,Ba, and for their 2D-laminarcounterparts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 100, ',', 1],[27.0, 3, 'D', 0],[10.0, 2, 'D', 0]

Ba
###Spin Excitations in Half-Doped Manganites|Ivon R. Buitrago,C. I. Ventura###
(623397, 623397)
 Using alocalized spin model we calculated magnons for 3D-perovskite compounds such asLa1-xMxMnO3, where M<missing VAR>Ca,Sr,Ba, and for their 2D-laminarcounterparts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 100, ',', 1],[29.0, 3, 'D', 0],[8.0, 2, 'D', 0]

La0.5Sr1.5MnO4
###Spin Excitations in Half-Doped Manganites|Ivon R. Buitrago,C. I. Ventura###
(623456, 623462)
 For the laminar half-doped manganiteLa0.5Sr1.5MnO4, for which magnon measurements by inelastic neutronscattering exist, as well as an estimation of the magnetic couplings, ourcalculations agree well with the experimental data.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0.21428571428571427,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07142857142857142,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 100, ',', 3],[88.0, 3, 'D', 2],[51.0, 2, 'D', 2]

Ta/FeCoB/MgO/FeCoB
###Spin-orbit-torque magnetization switching of a three terminal perpendicular magnetic tunnel junction|Murat Cubukcu,Olivier Boulle,Marc Drouard,Kevin Garello,Can Onur Avci,Ioan Mihai Miron,Juergen Langer,Berthold Ocker,Pietro Gambardella,Gilles Gaudin###
(623639, 623650)
 The device is composed ofa perpendicular Ta/FeCoB/MgO/FeCoB stack on top of a Ta current line.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Ta
###Spin-orbit-torque magnetization switching of a three terminal perpendicular magnetic tunnel junction|Murat Cubukcu,Olivier Boulle,Marc Drouard,Kevin Garello,Can Onur Avci,Ioan Mihai Miron,Juergen Langer,Berthold Ocker,Pietro Gambardella,Gilles Gaudin###
(623662, 623662)
 The device is composed ofa perpendicular Ta/FeCoB/MgO/FeCoB stack on top of a Ta current line.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeCoB
###Spin-orbit-torque magnetization switching of a three terminal perpendicular magnetic tunnel junction|Murat Cubukcu,Olivier Boulle,Marc Drouard,Kevin Garello,Can Onur Avci,Ioan Mihai Miron,Juergen Langer,Berthold Ocker,Pietro Gambardella,Gilles Gaudin###
(623680, 623682)
 Themagnetization of the bottom FeCoB layer can be switched reproducibly by theinjection of current pulses with density 5times1011 A/m<missing VAR>2 in the Talayer in the presence of an in-plane bias magnetic field, leading to thefull-scale change of the TMR signal.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ta
###Spin-orbit-torque magnetization switching of a three terminal perpendicular magnetic tunnel junction|Murat Cubukcu,Olivier Boulle,Marc Drouard,Kevin Garello,Can Onur Avci,Ioan Mihai Miron,Juergen Langer,Berthold Ocker,Pietro Gambardella,Gilles Gaudin###
(623725, 623725)
 Themagnetization of the bottom FeCoB layer can be switched reproducibly by theinjection of current pulses with density 5times1011 A/m<missing VAR>2 in the Talayer in the presence of an in-plane bias magnetic field, leading to thefull-scale change of the TMR signal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaAlO3/SrTiO3
###The Vortex Signature of Discrete Ferromagnetic Dipoles at the LaAlO$_3$/SrTiO$_3$ Interface|A. P. Petrović,A. Paré,T. R. Paudel,K. Lee,S. Holmes,C. H. W. Barnes,A. David,T. Wu,E. Y. Tsymbal,C. Panagopoulos###
(623835, 623843)
The Vortex Signature of Discrete Ferromagnetic Dipoles at the LaAlO3/SrTiO3 Interface.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

LaAlO3/SrTiO3
###The Vortex Signature of Discrete Ferromagnetic Dipoles at the LaAlO$_3$/SrTiO$_3$ Interface|A. P. Petrović,A. Paré,T. R. Paudel,K. Lee,S. Holmes,C. H. W. Barnes,A. David,T. Wu,E. Y. Tsymbal,C. Panagopoulos###
(623871, 623879)
 A hysteretic in-plane magnetoresistance develops below the superconductingtransition of LaAlO3/SrTiO3 interfaces for leftH/!
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

H
###The Vortex Signature of Discrete Ferromagnetic Dipoles at the LaAlO$_3$/SrTiO$_3$ Interface|A. P. Petrović,A. Paré,T. R. Paudel,K. Lee,S. Holmes,C. H. W. Barnes,A. David,T. Wu,E. Y. Tsymbal,C. Panagopoulos###
(623886, 623886)
 A hysteretic in-plane magnetoresistance develops below the superconductingtransition of LaAlO3/SrTiO3 interfaces for leftH/!
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs/AlGaAs
###Remotely sensed transport in microwave photoexcited GaAs/AlGaAs two-dimensional electron system|Tianyu Ye,Ramesh Mani,Werner Wegscheider###
(624057, 624062)
Remotely sensed transport in microwave photoexcited GaAs/AlGaAs two-dimensional electron system.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[194.0, 2, 'DES', 4]

GaAs/AlGaAs
###Remotely sensed transport in microwave photoexcited GaAs/AlGaAs two-dimensional electron system|Tianyu Ye,Ramesh Mani,Werner Wegscheider###
(624110, 624115)
 We demonstrate a strong correlation between the magnetoresistive and theconcurrent microwave reflection from the microwave photo-excited GaAs/AlGaAstwo-dimensional electron system (2DES).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[141.0, 2, 'DES', 3]

S
###Remotely sensed transport in microwave photoexcited GaAs/AlGaAs two-dimensional electron system|Tianyu Ye,Ramesh Mani,Werner Wegscheider###
(624130, 624130)
 We demonstrate a strong correlation between the magnetoresistive and theconcurrent microwave reflection from the microwave photo-excited GaAs/AlGaAstwo-dimensional electron system (2DES).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 2, 'DES', 3]

GaAs/AlGaAs
###Remotely sensed transport in microwave photoexcited GaAs/AlGaAs two-dimensional electron system|Tianyu Ye,Ramesh Mani,Werner Wegscheider###
(624213, 624218)
 Notably, the character of the reflection signal remains unchanged evenwhen the current is switched off in the GaAs/AlGaAs Hall bar specimen.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[38.0, 2, 'DES', 1]

S
###Remote sensor response study in the regime of the microwave radiation-induced magnetoresistance oscillations|Tianyu Ye,Ramesh Mani,Werner Wegscheider###
(624350, 624350)
 A concurrent remote sensing and magneto-transport study of the microwaveexcited two dimensional electron system (2DES) at liquid Helium temperatureshas been carried out using a carbon detector to remotely sense the microwaveactivity of the 2D electron system in the GaAs/AlGaAs heterostructure duringconventional magnetotransport measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 2, 'D', 0]

GaAs/AlGaAs
###Remote sensor response study in the regime of the microwave radiation-induced magnetoresistance oscillations|Tianyu Ye,Ramesh Mani,Werner Wegscheider###
(624404, 624409)
 A concurrent remote sensing and magneto-transport study of the microwaveexcited two dimensional electron system (2DES) at liquid Helium temperatureshas been carried out using a carbon detector to remotely sense the microwaveactivity of the 2D electron system in the GaAs/AlGaAs heterostructure duringconventional magnetotransport measurements.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[10.0, 2, 'D', 0]

In
###Remote sensor response study in the regime of the microwave radiation-induced magnetoresistance oscillations|Tianyu Ye,Ramesh Mani,Werner Wegscheider###
(624456, 624456)
 In addition, the oscillatory remotely sensed signal is shown toexhibit a power law type variation in its amplitude, similar to theradiation-induced magnetoresistance oscillations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 2, 'D', 2]

Fe
###Impact of lattice strain on the tunnel magneto-resistance in Fe/Insulator/Fe and Fe/Insulator/La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ magnetic tunnel junctions|Y. Saeed,N. Singh,N. Useinov,U. Schwingenschlögl###
(624541, 624541)
Impact of lattice strain on the tunnel magneto-resistance in Fe/Insulator/Fe and Fe/Insulator/La0.67Sr0.33MnO3 magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Impact of lattice strain on the tunnel magneto-resistance in Fe/Insulator/Fe and Fe/Insulator/La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ magnetic tunnel junctions|Y. Saeed,N. Singh,N. Useinov,U. Schwingenschlögl###
(624545, 624545)
Impact of lattice strain on the tunnel magneto-resistance in Fe/Insulator/Fe and Fe/Insulator/La0.67Sr0.33MnO3 magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Impact of lattice strain on the tunnel magneto-resistance in Fe/Insulator/Fe and Fe/Insulator/La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ magnetic tunnel junctions|Y. Saeed,N. Singh,N. Useinov,U. Schwingenschlögl###
(624549, 624549)
Impact of lattice strain on the tunnel magneto-resistance in Fe/Insulator/Fe and Fe/Insulator/La0.67Sr0.33MnO3 magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.67Sr0.33MnO3
###Impact of lattice strain on the tunnel magneto-resistance in Fe/Insulator/Fe and Fe/Insulator/La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ magnetic tunnel junctions|Y. Saeed,N. Singh,N. Useinov,U. Schwingenschlögl###
(624553, 624559)
Impact of lattice strain on the tunnel magneto-resistance in Fe/Insulator/Fe and Fe/Insulator/La0.67Sr0.33MnO3 magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.066,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.134,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Impact of lattice strain on the tunnel magneto-resistance in Fe/Insulator/Fe and Fe/Insulator/La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ magnetic tunnel junctions|Y. Saeed,N. Singh,N. Useinov,U. Schwingenschlögl###
(624721, 624721)
 Weconsider as an example single crystal magnetic Fe(110) electrodes forFe/Insulator/Fe and Fe/Insulator/La0.67Sr0.33MnO3 tunneljunctions, where the electronic band structures of Fe andLa0.67Sr0.33MnO3 are derived by itab-initio calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Impact of lattice strain on the tunnel magneto-resistance in Fe/Insulator/Fe and Fe/Insulator/La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ magnetic tunnel junctions|Y. Saeed,N. Singh,N. Useinov,U. Schwingenschlögl###
(624725, 624725)
 Weconsider as an example single crystal magnetic Fe(110) electrodes forFe/Insulator/Fe and Fe/Insulator/La0.67Sr0.33MnO3 tunneljunctions, where the electronic band structures of Fe andLa0.67Sr0.33MnO3 are derived by itab-initio calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Impact of lattice strain on the tunnel magneto-resistance in Fe/Insulator/Fe and Fe/Insulator/La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ magnetic tunnel junctions|Y. Saeed,N. Singh,N. Useinov,U. Schwingenschlögl###
(624729, 624729)
 Weconsider as an example single crystal magnetic Fe(110) electrodes forFe/Insulator/Fe and Fe/Insulator/La0.67Sr0.33MnO3 tunneljunctions, where the electronic band structures of Fe andLa0.67Sr0.33MnO3 are derived by itab-initio calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.67Sr0.33MnO3
###Impact of lattice strain on the tunnel magneto-resistance in Fe/Insulator/Fe and Fe/Insulator/La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ magnetic tunnel junctions|Y. Saeed,N. Singh,N. Useinov,U. Schwingenschlögl###
(624733, 624739)
 Weconsider as an example single crystal magnetic Fe(110) electrodes forFe/Insulator/Fe and Fe/Insulator/La0.67Sr0.33MnO3 tunneljunctions, where the electronic band structures of Fe andLa0.67Sr0.33MnO3 are derived by itab-initio calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.066,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.134,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Impact of lattice strain on the tunnel magneto-resistance in Fe/Insulator/Fe and Fe/Insulator/La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ magnetic tunnel junctions|Y. Saeed,N. Singh,N. Useinov,U. Schwingenschlögl###
(624759, 624759)
 Weconsider as an example single crystal magnetic Fe(110) electrodes forFe/Insulator/Fe and Fe/Insulator/La0.67Sr0.33MnO3 tunneljunctions, where the electronic band structures of Fe andLa0.67Sr0.33MnO3 are derived by itab-initio calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.67Sr0.33MnO3
###Impact of lattice strain on the tunnel magneto-resistance in Fe/Insulator/Fe and Fe/Insulator/La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ magnetic tunnel junctions|Y. Saeed,N. Singh,N. Useinov,U. Schwingenschlögl###
(624764, 624770)
 Weconsider as an example single crystal magnetic Fe(110) electrodes forFe/Insulator/Fe and Fe/Insulator/La0.67Sr0.33MnO3 tunneljunctions, where the electronic band structures of Fe andLa0.67Sr0.33MnO3 are derived by itab-initio calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.066,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.134,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###K and Mn co-doped BaCd2As2: a hexagonal structured bulk diluted magnetic semiconductor with large magnetoresistance|Xiaojun Yang,Yuke Li,Pan Zhang,Hao Jiang,Yongkang Luo,Qian Chen,Chunmu Feng,Chao Cao,Jianhui Dai,Qian Tao,Guanghan Cao,Zhu-an Xu###
(625028, 625028)
K and Mn co-doped BaCd2As2 a hexagonal structured bulk diluted magnetic semiconductor with large magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[225.0, 16, 'K', 5],[240.0, 10, 'Oe', 6],[252.0, -70, '%', 6]

Mn
###K and Mn co-doped BaCd2As2: a hexagonal structured bulk diluted magnetic semiconductor with large magnetoresistance|Xiaojun Yang,Yuke Li,Pan Zhang,Hao Jiang,Yongkang Luo,Qian Chen,Chunmu Feng,Chao Cao,Jianhui Dai,Qian Tao,Guanghan Cao,Zhu-an Xu###
(625032, 625032)
K and Mn co-doped BaCd2As2 a hexagonal structured bulk diluted magnetic semiconductor with large magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[221.0, 16, 'K', 5],[236.0, 10, 'Oe', 6],[248.0, -70, '%', 6]

BaCd2As2
###K and Mn co-doped BaCd2As2: a hexagonal structured bulk diluted magnetic semiconductor with large magnetoresistance|Xiaojun Yang,Yuke Li,Pan Zhang,Hao Jiang,Yongkang Luo,Qian Chen,Chunmu Feng,Chao Cao,Jianhui Dai,Qian Tao,Guanghan Cao,Zhu-an Xu###
(625038, 625042)
K and Mn co-doped BaCd2As2 a hexagonal structured bulk diluted magnetic semiconductor with large magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[211.0, 16, 'K', 5],[226.0, 10, 'Oe', 6],[238.0, -70, '%', 6]

K
###K and Mn co-doped BaCd2As2: a hexagonal structured bulk diluted magnetic semiconductor with large magnetoresistance|Xiaojun Yang,Yuke Li,Pan Zhang,Hao Jiang,Yongkang Luo,Qian Chen,Chunmu Feng,Chao Cao,Jianhui Dai,Qian Tao,Guanghan Cao,Zhu-an Xu###
(625083, 625083)
 A bulk diluted magnetic semiconductor was found in the K and Mn co-dopedBaCd2As2 system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[170.0, 16, 'K', 4],[185.0, 10, 'Oe', 5],[197.0, -70, '%', 5]

Mn
###K and Mn co-doped BaCd2As2: a hexagonal structured bulk diluted magnetic semiconductor with large magnetoresistance|Xiaojun Yang,Yuke Li,Pan Zhang,Hao Jiang,Yongkang Luo,Qian Chen,Chunmu Feng,Chao Cao,Jianhui Dai,Qian Tao,Guanghan Cao,Zhu-an Xu###
(625087, 625087)
 A bulk diluted magnetic semiconductor was found in the K and Mn co-dopedBaCd2As2 system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 16, 'K', 4],[181.0, 10, 'Oe', 5],[193.0, -70, '%', 5]

BaCd2As2
###K and Mn co-doped BaCd2As2: a hexagonal structured bulk diluted magnetic semiconductor with large magnetoresistance|Xiaojun Yang,Yuke Li,Pan Zhang,Hao Jiang,Yongkang Luo,Qian Chen,Chunmu Feng,Chao Cao,Jianhui Dai,Qian Tao,Guanghan Cao,Zhu-an Xu###
(625094, 625098)
 A bulk diluted magnetic semiconductor was found in the K and Mn co-dopedBaCd2As2 system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 16, 'K', 4],[170.0, 10, 'Oe', 5],[182.0, -70, '%', 5]

ThCr2Si2
###K and Mn co-doped BaCd2As2: a hexagonal structured bulk diluted magnetic semiconductor with large magnetoresistance|Xiaojun Yang,Yuke Li,Pan Zhang,Hao Jiang,Yongkang Luo,Qian Chen,Chunmu Feng,Chao Cao,Jianhui Dai,Qian Tao,Guanghan Cao,Zhu-an Xu###
(625114, 625118)
 Different from recently reported tetragonalThCr2Si2-structured II-II-V based(Ba,K)(Zn,Mn)2As2, the Ba1-yKyCd2-xMnxAs2system has a hexagonal CaAl2Si2-type structure with the Cd2As2 layer forming ahoneycomb-like network.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 16, 'K', 3],[150.0, 10, 'Oe', 4],[162.0, -70, '%', 4]

II
###K and Mn co-doped BaCd2As2: a hexagonal structured bulk diluted magnetic semiconductor with large magnetoresistance|Xiaojun Yang,Yuke Li,Pan Zhang,Hao Jiang,Yongkang Luo,Qian Chen,Chunmu Feng,Chao Cao,Jianhui Dai,Qian Tao,Guanghan Cao,Zhu-an Xu###
(625122, 625123)
 Different from recently reported tetragonalThCr2Si2-structured II-II-V based(Ba,K)(Zn,Mn)2As2, the Ba1-yKyCd2-xMnxAs2system has a hexagonal CaAl2Si2-type structure with the Cd2As2 layer forming ahoneycomb-like network.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 16, 'K', 3],[145.0, 10, 'Oe', 4],[157.0, -70, '%', 4]

II
###K and Mn co-doped BaCd2As2: a hexagonal structured bulk diluted magnetic semiconductor with large magnetoresistance|Xiaojun Yang,Yuke Li,Pan Zhang,Hao Jiang,Yongkang Luo,Qian Chen,Chunmu Feng,Chao Cao,Jianhui Dai,Qian Tao,Guanghan Cao,Zhu-an Xu###
(625125, 625126)
 Different from recently reported tetragonalThCr2Si2-structured II-II-V based(Ba,K)(Zn,Mn)2As2, the Ba1-yKyCd2-xMnxAs2system has a hexagonal CaAl2Si2-type structure with the Cd2As2 layer forming ahoneycomb-like network.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 16, 'K', 3],[142.0, 10, 'Oe', 4],[154.0, -70, '%', 4]

V
###K and Mn co-doped BaCd2As2: a hexagonal structured bulk diluted magnetic semiconductor with large magnetoresistance|Xiaojun Yang,Yuke Li,Pan Zhang,Hao Jiang,Yongkang Luo,Qian Chen,Chunmu Feng,Chao Cao,Jianhui Dai,Qian Tao,Guanghan Cao,Zhu-an Xu###
(625128, 625128)
 Different from recently reported tetragonalThCr2Si2-structured II-II-V based(Ba,K)(Zn,Mn)2As2, the Ba1-yKyCd2-xMnxAs2system has a hexagonal CaAl2Si2-type structure with the Cd2As2 layer forming ahoneycomb-like network.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 16, 'K', 3],[140.0, 10, 'Oe', 4],[152.0, -70, '%', 4]

Ba
###K and Mn co-doped BaCd2As2: a hexagonal structured bulk diluted magnetic semiconductor with large magnetoresistance|Xiaojun Yang,Yuke Li,Pan Zhang,Hao Jiang,Yongkang Luo,Qian Chen,Chunmu Feng,Chao Cao,Jianhui Dai,Qian Tao,Guanghan Cao,Zhu-an Xu###
(625132, 625132)
 Different from recently reported tetragonalThCr2Si2-structured II-II-V based(Ba,K)(Zn,Mn)2As2, the Ba1-yKyCd2-xMnxAs2system has a hexagonal CaAl2Si2-type structure with the Cd2As2 layer forming ahoneycomb-like network.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 16, 'K', 3],[136.0, 10, 'Oe', 4],[148.0, -70, '%', 4]

K
###K and Mn co-doped BaCd2As2: a hexagonal structured bulk diluted magnetic semiconductor with large magnetoresistance|Xiaojun Yang,Yuke Li,Pan Zhang,Hao Jiang,Yongkang Luo,Qian Chen,Chunmu Feng,Chao Cao,Jianhui Dai,Qian Tao,Guanghan Cao,Zhu-an Xu###
(625134, 625134)
 Different from recently reported tetragonalThCr2Si2-structured II-II-V based(Ba,K)(Zn,Mn)2As2, the Ba1-yKyCd2-xMnxAs2system has a hexagonal CaAl2Si2-type structure with the Cd2As2 layer forming ahoneycomb-like network.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 16, 'K', 3],[134.0, 10, 'Oe', 4],[146.0, -70, '%', 4]

Zn
###K and Mn co-doped BaCd2As2: a hexagonal structured bulk diluted magnetic semiconductor with large magnetoresistance|Xiaojun Yang,Yuke Li,Pan Zhang,Hao Jiang,Yongkang Luo,Qian Chen,Chunmu Feng,Chao Cao,Jianhui Dai,Qian Tao,Guanghan Cao,Zhu-an Xu###
(625137, 625137)
 Different from recently reported tetragonalThCr2Si2-structured II-II-V based(Ba,K)(Zn,Mn)2As2, the Ba1-yKyCd2-xMnxAs2system has a hexagonal CaAl2Si2-type structure with the Cd2As2 layer forming ahoneycomb-like network.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 16, 'K', 3],[131.0, 10, 'Oe', 4],[143.0, -70, '%', 4]

Mn
###K and Mn co-doped BaCd2As2: a hexagonal structured bulk diluted magnetic semiconductor with large magnetoresistance|Xiaojun Yang,Yuke Li,Pan Zhang,Hao Jiang,Yongkang Luo,Qian Chen,Chunmu Feng,Chao Cao,Jianhui Dai,Qian Tao,Guanghan Cao,Zhu-an Xu###
(625139, 625139)
 Different from recently reported tetragonalThCr2Si2-structured II-II-V based(Ba,K)(Zn,Mn)2As2, the Ba1-yKyCd2-xMnxAs2system has a hexagonal CaAl2Si2-type structure with the Cd2As2 layer forming ahoneycomb-like network.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 16, 'K', 3],[129.0, 10, 'Oe', 4],[141.0, -70, '%', 4]

As2
###K and Mn co-doped BaCd2As2: a hexagonal structured bulk diluted magnetic semiconductor with large magnetoresistance|Xiaojun Yang,Yuke Li,Pan Zhang,Hao Jiang,Yongkang Luo,Qian Chen,Chunmu Feng,Chao Cao,Jianhui Dai,Qian Tao,Guanghan Cao,Zhu-an Xu###
(625142, 625143)
 Different from recently reported tetragonalThCr2Si2-structured II-II-V based(Ba,K)(Zn,Mn)2As2, the Ba1-yKyCd2-xMnxAs2system has a hexagonal CaAl2Si2-type structure with the Cd2As2 layer forming ahoneycomb-like network.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 16, 'K', 3],[125.0, 10, 'Oe', 4],[137.0, -70, '%', 4]

Ba1-y
###K and Mn co-doped BaCd2As2: a hexagonal structured bulk diluted magnetic semiconductor with large magnetoresistance|Xiaojun Yang,Yuke Li,Pan Zhang,Hao Jiang,Yongkang Luo,Qian Chen,Chunmu Feng,Chao Cao,Jianhui Dai,Qian Tao,Guanghan Cao,Zhu-an Xu###
(625148, 625151)
 Different from recently reported tetragonalThCr2Si2-structured II-II-V based(Ba,K)(Zn,Mn)2As2, the Ba1-yKyCd2-xMnxAs2system has a hexagonal CaAl2Si2-type structure with the Cd2As2 layer forming ahoneycomb-like network.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[102.0, 16, 'K', 3],[117.0, 10, 'Oe', 4],[129.0, -70, '%', 4]

Cd2-x
###K and Mn co-doped BaCd2As2: a hexagonal structured bulk diluted magnetic semiconductor with large magnetoresistance|Xiaojun Yang,Yuke Li,Pan Zhang,Hao Jiang,Yongkang Luo,Qian Chen,Chunmu Feng,Chao Cao,Jianhui Dai,Qian Tao,Guanghan Cao,Zhu-an Xu###
(625153, 625156)
 Different from recently reported tetragonalThCr2Si2-structured II-II-V based(Ba,K)(Zn,Mn)2As2, the Ba1-yKyCd2-xMnxAs2system has a hexagonal CaAl2Si2-type structure with the Cd2As2 layer forming ahoneycomb-like network.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[97.0, 16, 'K', 3],[112.0, 10, 'Oe', 4],[124.0, -70, '%', 4]

As2
###K and Mn co-doped BaCd2As2: a hexagonal structured bulk diluted magnetic semiconductor with large magnetoresistance|Xiaojun Yang,Yuke Li,Pan Zhang,Hao Jiang,Yongkang Luo,Qian Chen,Chunmu Feng,Chao Cao,Jianhui Dai,Qian Tao,Guanghan Cao,Zhu-an Xu###
(625158, 625159)
 Different from recently reported tetragonalThCr2Si2-structured II-II-V based(Ba,K)(Zn,Mn)2As2, the Ba1-yKyCd2-xMnxAs2system has a hexagonal CaAl2Si2-type structure with the Cd2As2 layer forming ahoneycomb-like network.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 16, 'K', 3],[109.0, 10, 'Oe', 4],[121.0, -70, '%', 4]

CaAl2Si2
###K and Mn co-doped BaCd2As2: a hexagonal structured bulk diluted magnetic semiconductor with large magnetoresistance|Xiaojun Yang,Yuke Li,Pan Zhang,Hao Jiang,Yongkang Luo,Qian Chen,Chunmu Feng,Chao Cao,Jianhui Dai,Qian Tao,Guanghan Cao,Zhu-an Xu###
(625170, 625174)
 Different from recently reported tetragonalThCr2Si2-structured II-II-V based(Ba,K)(Zn,Mn)2As2, the Ba1-yKyCd2-xMnxAs2system has a hexagonal CaAl2Si2-type structure with the Cd2As2 layer forming ahoneycomb-like network.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.4,0.4,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 16, 'K', 3],[94.0, 10, 'Oe', 4],[106.0, -70, '%', 4]

Cd2As2
###K and Mn co-doped BaCd2As2: a hexagonal structured bulk diluted magnetic semiconductor with large magnetoresistance|Xiaojun Yang,Yuke Li,Pan Zhang,Hao Jiang,Yongkang Luo,Qian Chen,Chunmu Feng,Chao Cao,Jianhui Dai,Qian Tao,Guanghan Cao,Zhu-an Xu###
(625184, 625187)
 Different from recently reported tetragonalThCr2Si2-structured II-II-V based(Ba,K)(Zn,Mn)2As2, the Ba1-yKyCd2-xMnxAs2system has a hexagonal CaAl2Si2-type structure with the Cd2As2 layer forming ahoneycomb-like network.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 16, 'K', 3],[81.0, 10, 'Oe', 4],[93.0, -70, '%', 4]

Mn
###K and Mn co-doped BaCd2As2: a hexagonal structured bulk diluted magnetic semiconductor with large magnetoresistance|Xiaojun Yang,Yuke Li,Pan Zhang,Hao Jiang,Yongkang Luo,Qian Chen,Chunmu Feng,Chao Cao,Jianhui Dai,Qian Tao,Guanghan Cao,Zhu-an Xu###
(625205, 625205)
 The Mn concentration reaches up to its x<missing VAR> ?
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 16, 'K', 2],[63.0, 10, 'Oe', 3],[75.0, -70, '%', 3]

Ba1-y
###K and Mn co-doped BaCd2As2: a hexagonal structured bulk diluted magnetic semiconductor with large magnetoresistance|Xiaojun Yang,Yuke Li,Pan Zhang,Hao Jiang,Yongkang Luo,Qian Chen,Chunmu Feng,Chao Cao,Jianhui Dai,Qian Tao,Guanghan Cao,Zhu-an Xu###
(625292, 625295)
 With low coercive field lessthan 10 Oe and large magnetoresistence of about -70%, the hexagonal structuredBa1-yKyCd2-xMnxAs2 can be served as a promising candidate for spinmanipulations.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[39.0, 16, 'K', 1],[24.0, 10, 'Oe', 0],[12.0, -70, '%', 0]

Cd2-x
###K and Mn co-doped BaCd2As2: a hexagonal structured bulk diluted magnetic semiconductor with large magnetoresistance|Xiaojun Yang,Yuke Li,Pan Zhang,Hao Jiang,Yongkang Luo,Qian Chen,Chunmu Feng,Chao Cao,Jianhui Dai,Qian Tao,Guanghan Cao,Zhu-an Xu###
(625297, 625300)
 With low coercive field lessthan 10 Oe and large magnetoresistence of about -70%, the hexagonal structuredBa1-yKyCd2-xMnxAs2 can be served as a promising candidate for spinmanipulations.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[44.0, 16, 'K', 1],[29.0, 10, 'Oe', 0],[17.0, -70, '%', 0]

As2
###K and Mn co-doped BaCd2As2: a hexagonal structured bulk diluted magnetic semiconductor with large magnetoresistance|Xiaojun Yang,Yuke Li,Pan Zhang,Hao Jiang,Yongkang Luo,Qian Chen,Chunmu Feng,Chao Cao,Jianhui Dai,Qian Tao,Guanghan Cao,Zhu-an Xu###
(625302, 625303)
 With low coercive field lessthan 10 Oe and large magnetoresistence of about -70%, the hexagonal structuredBa1-yKyCd2-xMnxAs2 can be served as a promising candidate for spinmanipulations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 16, 'K', 1],[34.0, 10, 'Oe', 0],[22.0, -70, '%', 0]

As
###Giant magnetoresistance and perfect spin filter in silicene, germanene, and stanene|Stephan Rachel,Motohiko Ezawa###
(625504, 625504)
 As a consequence one can realize quantumspin-Hall effect without edge states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Giant magnetoresistance and perfect spin filter in silicene, germanene, and stanene|Stephan Rachel,Motohiko Ezawa###
(625532, 625532)
 In addition, these edge manipulationslead to very promising applications a giant magnetoresistance and a perfectspin filter.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HgBa2CuO4
###Validity of Kohler's rule in the pseudogap phase of the cuprate superconductors|M. K. Chan,M. J. Veit,C. J. Dorow,Y. Ge,Y. Li,W. Tabis,Y. Tang,X. Zhao,N. Barišić,M. Greven###
(625676, 625681)
 We report in-plane resistivity (rho) and transverse magnetoresistance (MR)measurements in underdoped HgBa2CuO4delta (Hg1201).
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(Hg1201)
###Validity of Kohler's rule in the pseudogap phase of the cuprate superconductors|M. K. Chan,M. J. Veit,C. J. Dorow,Y. Ge,Y. Li,W. Tabis,Y. Tang,X. Zhao,N. Barišić,M. Greven###
(625684, 625687)
 We report in-plane resistivity (rho) and transverse magnetoresistance (MR)measurements in underdoped HgBa2CuO4delta (Hg1201).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Hg1201
###Validity of Kohler's rule in the pseudogap phase of the cuprate superconductors|M. K. Chan,M. J. Veit,C. J. Dorow,Y. Ge,Y. Li,W. Tabis,Y. Tang,X. Zhao,N. Barišić,M. Greven###
(625749, 625750)
 Contrary to thelongstanding view that Kohlers<missing VAR> rule is strongly violated in underdopedcuprates, we find that it is in fact satisfied in the pseudogap phase ofHg1201.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H2
###Validity of Kohler's rule in the pseudogap phase of the cuprate superconductors|M. K. Chan,M. J. Veit,C. J. Dorow,Y. Ge,Y. Li,W. Tabis,Y. Tang,X. Zhao,N. Barišić,M. Greven###
(625779, 625780)
 The transverse MR shows a quadratic field dependence,deltarho/rhoo<missing VAR>a H2, with a(T)propto T<missing VAR>-4.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Validity of Kohler's rule in the pseudogap phase of the cuprate superconductors|M. K. Chan,M. J. Veit,C. J. Dorow,Y. Ge,Y. Li,W. Tabis,Y. Tang,X. Zhao,N. Barišić,M. Greven###
(625796, 625796)
 In combination with theobserved rhopropto T<missing VAR>2 dependence, this is consistent with a singleFermi-liquid quasiparticle scattering rate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ru
###A 4-fold-symmetry hexagonal ruthenium for magnetic heterostructures exhibiting enhanced perpendicular magnetic anisotropy and tunnel magnetoresistance|Zhenchao Wen,Hiroaki Sukegawa,Takao Furubayashi,Jungwoo Koo,Koichiro Inomata,Seiji Mitani,Jason Paul Hadorn,Tadakatsu Ohkubo,Kazuhiro Hono###
(626159, 626159)
 An unusual crystallographic orientation of hexagonal Ru with a 4-foldsymmetry emerging in epitaxial MgO/Ru/Co2FeAl/MgO heterostructures is reported,in which an approximately Ru(02-23) growth attributes to the lattice matchingamong MgO, Ru, and Co2FeAl.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO/Ru/Co2FeAl/MgO
###A 4-fold-symmetry hexagonal ruthenium for magnetic heterostructures exhibiting enhanced perpendicular magnetic anisotropy and tunnel magnetoresistance|Zhenchao Wen,Hiroaki Sukegawa,Takao Furubayashi,Jungwoo Koo,Koichiro Inomata,Seiji Mitani,Jason Paul Hadorn,Tadakatsu Ohkubo,Kazuhiro Hono###
(626178, 626189)
 An unusual crystallographic orientation of hexagonal Ru with a 4-foldsymmetry emerging in epitaxial MgO/Ru/Co2FeAl/MgO heterostructures is reported,in which an approximately Ru(02-23) growth attributes to the lattice matchingamong MgO, Ru, and Co2FeAl.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

MgO
###A 4-fold-symmetry hexagonal ruthenium for magnetic heterostructures exhibiting enhanced perpendicular magnetic anisotropy and tunnel magnetoresistance|Zhenchao Wen,Hiroaki Sukegawa,Takao Furubayashi,Jungwoo Koo,Koichiro Inomata,Seiji Mitani,Jason Paul Hadorn,Tadakatsu Ohkubo,Kazuhiro Hono###
(626229, 626230)
 An unusual crystallographic orientation of hexagonal Ru with a 4-foldsymmetry emerging in epitaxial MgO/Ru/Co2FeAl/MgO heterostructures is reported,in which an approximately Ru(02-23) growth attributes to the lattice matchingamong MgO, Ru, and Co2FeAl.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ru
###A 4-fold-symmetry hexagonal ruthenium for magnetic heterostructures exhibiting enhanced perpendicular magnetic anisotropy and tunnel magnetoresistance|Zhenchao Wen,Hiroaki Sukegawa,Takao Furubayashi,Jungwoo Koo,Koichiro Inomata,Seiji Mitani,Jason Paul Hadorn,Tadakatsu Ohkubo,Kazuhiro Hono###
(626233, 626233)
 An unusual crystallographic orientation of hexagonal Ru with a 4-foldsymmetry emerging in epitaxial MgO/Ru/Co2FeAl/MgO heterostructures is reported,in which an approximately Ru(02-23) growth attributes to the lattice matchingamong MgO, Ru, and Co2FeAl.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co2FeAl
###A 4-fold-symmetry hexagonal ruthenium for magnetic heterostructures exhibiting enhanced perpendicular magnetic anisotropy and tunnel magnetoresistance|Zhenchao Wen,Hiroaki Sukegawa,Takao Furubayashi,Jungwoo Koo,Koichiro Inomata,Seiji Mitani,Jason Paul Hadorn,Tadakatsu Ohkubo,Kazuhiro Hono###
(626238, 626241)
 An unusual crystallographic orientation of hexagonal Ru with a 4-foldsymmetry emerging in epitaxial MgO/Ru/Co2FeAl/MgO heterostructures is reported,in which an approximately Ru(02-23) growth attributes to the lattice matchingamong MgO, Ru, and Co2FeAl.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co2FeAl/MgO
###A 4-fold-symmetry hexagonal ruthenium for magnetic heterostructures exhibiting enhanced perpendicular magnetic anisotropy and tunnel magnetoresistance|Zhenchao Wen,Hiroaki Sukegawa,Takao Furubayashi,Jungwoo Koo,Koichiro Inomata,Seiji Mitani,Jason Paul Hadorn,Tadakatsu Ohkubo,Kazuhiro Hono###
(626255, 626261)
 Perpendicular magnetic anisotropy of theCo2FeAl/MgO interface is substantially enhanced as compared with those with aCr(001) layer.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Ru
###A 4-fold-symmetry hexagonal ruthenium for magnetic heterostructures exhibiting enhanced perpendicular magnetic anisotropy and tunnel magnetoresistance|Zhenchao Wen,Hiroaki Sukegawa,Takao Furubayashi,Jungwoo Koo,Koichiro Inomata,Seiji Mitani,Jason Paul Hadorn,Tadakatsu Ohkubo,Kazuhiro Hono###
(626349, 626349)
 The 4-fold-symmetry hexagonal Ru arises from an epitaxial growth withan unprecedentedly high crystal index, opening a unique pathway for thedevelopment of perpendicular anisotropy films of cubic and tetragonalferromagnetic alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co40Fe40B20
###Spin-valve effects in point contacts to exchange biased Co40Fe40B20 films|O. P. Balkashin,V. V. Fisun,L. Yu. Triputen,S. Andersson,V. Korenivski,Yu. G. Naidyuk###
(626680, 626685)
Spin-valve effects in point contacts to exchange biased Co40Fe40B20 films.
Featurization terminated normally.
0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(N)
###Spin-valve effects in point contacts to exchange biased Co40Fe40B20 films|O. P. Balkashin,V. V. Fisun,L. Yu. Triputen,S. Andersson,V. Korenivski,Yu. G. Naidyuk###
(626717, 626719)
 Nonlinear current-voltage characteristics and magnetoresistance of pointcontacts between a normal metal (N) and films of amorphous ferromagnet (F)Co40Fe40B20 of different thickness, exchange-biased by antiferromagneticMn80Ir20 are studied.
Featurization successful!
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(F)
###Spin-valve effects in point contacts to exchange biased Co40Fe40B20 films|O. P. Balkashin,V. V. Fisun,L. Yu. Triputen,S. Andersson,V. Korenivski,Yu. G. Naidyuk###
(626731, 626733)
 Nonlinear current-voltage characteristics and magnetoresistance of pointcontacts between a normal metal (N) and films of amorphous ferromagnet (F)Co40Fe40B20 of different thickness, exchange-biased by antiferromagneticMn80Ir20 are studied.
Featurization successful!
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co40Fe40B20
###Spin-valve effects in point contacts to exchange biased Co40Fe40B20 films|O. P. Balkashin,V. V. Fisun,L. Yu. Triputen,S. Andersson,V. Korenivski,Yu. G. Naidyuk###
(626736, 626741)
 Nonlinear current-voltage characteristics and magnetoresistance of pointcontacts between a normal metal (N) and films of amorphous ferromagnet (F)Co40Fe40B20 of different thickness, exchange-biased by antiferromagneticMn80Ir20 are studied.
Featurization terminated normally.
0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn80Ir20
###Spin-valve effects in point contacts to exchange biased Co40Fe40B20 films|O. P. Balkashin,V. V. Fisun,L. Yu. Triputen,S. Andersson,V. Korenivski,Yu. G. Naidyuk###
(626759, 626762)
 Nonlinear current-voltage characteristics and magnetoresistance of pointcontacts between a normal metal (N) and films of amorphous ferromagnet (F)Co40Fe40B20 of different thickness, exchange-biased by antiferromagneticMn80Ir20 are studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Spin-valve effects in point contacts to exchange biased Co40Fe40B20 films|O. P. Balkashin,V. V. Fisun,L. Yu. Triputen,S. Andersson,V. Korenivski,Yu. G. Naidyuk###
(626790, 626790)
 A surface spin valve effect in the conductance of suchF-N contacts is observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Spin-valve effects in point contacts to exchange biased Co40Fe40B20 films|O. P. Balkashin,V. V. Fisun,L. Yu. Triputen,S. Andersson,V. Korenivski,Yu. G. Naidyuk###
(626792, 626792)
 A surface spin valve effect in the conductance of suchF-N contacts is observed.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co40Fe40B20
###Spin-valve effects in point contacts to exchange biased Co40Fe40B20 films|O. P. Balkashin,V. V. Fisun,L. Yu. Triputen,S. Andersson,V. Korenivski,Yu. G. Naidyuk###
(626828, 626833)
 The effect of exchange bias is found to be inverselyproportional to the Co40Fe40B20 film thickness.
Featurization terminated normally.
0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GdCoIn5
###Evidence of a small crystal field anisotropy in GdCoIn$_5$|Diana Betancourth,Victor F. Correa,Daniel J. García###
(627184, 627187)
Evidence of a small crystal field anisotropy in GdCoIn5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7142857142857143,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 2, 'Tesla', 4]

GdCoIn5
###Evidence of a small crystal field anisotropy in GdCoIn$_5$|Diana Betancourth,Victor F. Correa,Daniel J. García###
(627223, 627226)
 We investigate the effects of an applied magnetic field on the magneticproperties of the antiferromagnet GdCoIn5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7142857142857143,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 2, 'Tesla', 3]

N
###Evidence of a small crystal field anisotropy in GdCoIn$_5$|Diana Betancourth,Victor F. Correa,Daniel J. García###
(627247, 627247)
 The prominent anisotropy observedin the susceptibility below T<missing VAR>N is rapidly suppressed by a field of just afew Tesla.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 2, 'Tesla', 2]

HgTe
###Quantum interference in HgTe structures|I. V. Gornyi,V. Yu. Kachorovskii,A. D. Mirlin,P. M. Ostrovsky###
(627409, 627410)
Quantum interference in HgTe structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HgTe/HgCdTe
###Quantum interference in HgTe structures|I. V. Gornyi,V. Yu. Kachorovskii,A. D. Mirlin,P. M. Ostrovsky###
(627425, 627430)
 We study quantum transport in HgTe/HgCdTe quantum wells under the conditionthat the chemical potential is located outside of the bandgap.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

HgTe/HgCdTe
###Quantum interference in HgTe structures|I. V. Gornyi,V. Yu. Kachorovskii,A. D. Mirlin,P. M. Ostrovsky###
(627565, 627570)
 Based on this analysis, we overviewpossible patterns of symmetry breaking that govern the quantum interference(weak localization or weak antilocalization) correction to the conductivity intwo dimensional HgTe/HgCdTe samples.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

SH
###Detection of the dc inverse spin Hall effect due to spin pumping in a novel meander-stripline geometry|Mathias Weiler,Justin M. Shaw,Hans T. Nembach,Thomas J. Silva###
(627711, 627712)
 The dc voltage obtained from the inverse spin Hall effect (i<missing VAR>SHE) due to spinpumping in ferromagnet/normal-metal (NM) bilayers can be unintentionallysuperimposed with magnetoresistive rectification of ac charge currents in theferromagnetic layer.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Detection of the dc inverse spin Hall effect due to spin pumping in a novel meander-stripline geometry|Mathias Weiler,Justin M. Shaw,Hans T. Nembach,Thomas J. Silva###
(627734, 627734)
 The dc voltage obtained from the inverse spin Hall effect (i<missing VAR>SHE) due to spinpumping in ferromagnet/normal-metal (NM) bilayers can be unintentionallysuperimposed with magnetoresistive rectification of ac charge currents in theferromagnetic layer.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SH
###Detection of the dc inverse spin Hall effect due to spin pumping in a novel meander-stripline geometry|Mathias Weiler,Justin M. Shaw,Hans T. Nembach,Thomas J. Silva###
(627801, 627802)
 We introduce a geometry in which these spuriousrectification voltages vanish while the i<missing VAR>SHE<missing VAR> voltage is maximized.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Detection of the dc inverse spin Hall effect due to spin pumping in a novel meander-stripline geometry|Mathias Weiler,Justin M. Shaw,Hans T. Nembach,Thomas J. Silva###
(627812, 627812)
 In thisgeometry, a quantitative study of the dc i<missing VAR>SHE<missing VAR> is performed in a broad frequencyrange for Permalloy/NM<missing VAR> multilayers with NM<missing VAR>Pt, Ta, Cu/Au, Cu/Pt.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SH
###Detection of the dc inverse spin Hall effect due to spin pumping in a novel meander-stripline geometry|Mathias Weiler,Justin M. Shaw,Hans T. Nembach,Thomas J. Silva###
(627833, 627834)
 In thisgeometry, a quantitative study of the dc i<missing VAR>SHE<missing VAR> is performed in a broad frequencyrange for Permalloy/NM<missing VAR> multilayers with NM<missing VAR>Pt, Ta, Cu/Au, Cu/Pt.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Detection of the dc inverse spin Hall effect due to spin pumping in a novel meander-stripline geometry|Mathias Weiler,Justin M. Shaw,Hans T. Nembach,Thomas J. Silva###
(627856, 627856)
 In thisgeometry, a quantitative study of the dc i<missing VAR>SHE<missing VAR> is performed in a broad frequencyrange for Permalloy/NM<missing VAR> multilayers with NM<missing VAR>Pt, Ta, Cu/Au, Cu/Pt.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Detection of the dc inverse spin Hall effect due to spin pumping in a novel meander-stripline geometry|Mathias Weiler,Justin M. Shaw,Hans T. Nembach,Thomas J. Silva###
(627863, 627863)
 In thisgeometry, a quantitative study of the dc i<missing VAR>SHE<missing VAR> is performed in a broad frequencyrange for Permalloy/NM<missing VAR> multilayers with NM<missing VAR>Pt, Ta, Cu/Au, Cu/Pt.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Detection of the dc inverse spin Hall effect due to spin pumping in a novel meander-stripline geometry|Mathias Weiler,Justin M. Shaw,Hans T. Nembach,Thomas J. Silva###
(627865, 627865)
 In thisgeometry, a quantitative study of the dc i<missing VAR>SHE<missing VAR> is performed in a broad frequencyrange for Permalloy/NM<missing VAR> multilayers with NM<missing VAR>Pt, Ta, Cu/Au, Cu/Pt.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ta
###Detection of the dc inverse spin Hall effect due to spin pumping in a novel meander-stripline geometry|Mathias Weiler,Justin M. Shaw,Hans T. Nembach,Thomas J. Silva###
(627868, 627868)
 In thisgeometry, a quantitative study of the dc i<missing VAR>SHE<missing VAR> is performed in a broad frequencyrange for Permalloy/NM<missing VAR> multilayers with NM<missing VAR>Pt, Ta, Cu/Au, Cu/Pt.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu/Au
###Detection of the dc inverse spin Hall effect due to spin pumping in a novel meander-stripline geometry|Mathias Weiler,Justin M. Shaw,Hans T. Nembach,Thomas J. Silva###
(627871, 627873)
 In thisgeometry, a quantitative study of the dc i<missing VAR>SHE<missing VAR> is performed in a broad frequencyrange for Permalloy/NM<missing VAR> multilayers with NM<missing VAR>Pt, Ta, Cu/Au, Cu/Pt.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Cu/Pt
###Detection of the dc inverse spin Hall effect due to spin pumping in a novel meander-stripline geometry|Mathias Weiler,Justin M. Shaw,Hans T. Nembach,Thomas J. Silva###
(627876, 627878)
 In thisgeometry, a quantitative study of the dc i<missing VAR>SHE<missing VAR> is performed in a broad frequencyrange for Permalloy/NM<missing VAR> multilayers with NM<missing VAR>Pt, Ta, Cu/Au, Cu/Pt.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

SH
###Detection of the dc inverse spin Hall effect due to spin pumping in a novel meander-stripline geometry|Mathias Weiler,Justin M. Shaw,Hans T. Nembach,Thomas J. Silva###
(627903, 627904)
 Theexperimentally recorded voltages can be fully ascribed to the i<missing VAR>SHE<missing VAR> due to spinpumping.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SH
###Detection of the dc inverse spin Hall effect due to spin pumping in a novel meander-stripline geometry|Mathias Weiler,Justin M. Shaw,Hans T. Nembach,Thomas J. Silva###
(627928, 627929)
 Furthermore we measure a small i<missing VAR>SHE<missing VAR> voltage in single CoFe thin films.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFe
###Detection of the dc inverse spin Hall effect due to spin pumping in a novel meander-stripline geometry|Mathias Weiler,Justin M. Shaw,Hans T. Nembach,Thomas J. Silva###
(627938, 627939)
 Furthermore we measure a small i<missing VAR>SHE<missing VAR> voltage in single CoFe thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.7Ca0.3MnO3/S
###Sign Reversal of anisotropic magnetoresistance in La0.7Ca0.3MnO3/STO ultrathin films|Himanshu Sharma,A. Tulapurkar,C. V. Tomy###
(627966, 627974)
Sign Reversal of anisotropic magnetoresistance in La0.7Ca0.3MnO3/ST<missing VAR>O ultrathin films.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[60.0, 4, 'nm', 1],[122.0, 6, 'nm', 2],[202.0, 4, 'nm', 3]

O
###Sign Reversal of anisotropic magnetoresistance in La0.7Ca0.3MnO3/STO ultrathin films|Himanshu Sharma,A. Tulapurkar,C. V. Tomy###
(627976, 627976)
Sign Reversal of anisotropic magnetoresistance in La0.7Ca0.3MnO3/ST<missing VAR>O ultrathin films.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 4, 'nm', 1],[120.0, 6, 'nm', 2],[200.0, 4, 'nm', 3]

O
###Sign Reversal of anisotropic magnetoresistance in La0.7Ca0.3MnO3/STO ultrathin films|Himanshu Sharma,A. Tulapurkar,C. V. Tomy###
(628019, 628019)
 We present the observation of strain induced sign reversal of anisotropicmagnetoresistance (AMR) in LCMO (LCMO) ultrathin films (thickness 4 nm)deposited on ST<missing VAR>O (001) substrate (ST<missing VAR>O).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 4, 'nm', 0],[77.0, 6, 'nm', 1],[157.0, 4, 'nm', 2]

O
###Sign Reversal of anisotropic magnetoresistance in La0.7Ca0.3MnO3/STO ultrathin films|Himanshu Sharma,A. Tulapurkar,C. V. Tomy###
(628025, 628025)
 We present the observation of strain induced sign reversal of anisotropicmagnetoresistance (AMR) in LCMO (LCMO) ultrathin films (thickness 4 nm)deposited on ST<missing VAR>O (001) substrate (ST<missing VAR>O).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 4, 'nm', 0],[71.0, 6, 'nm', 1],[151.0, 4, 'nm', 2]

S
###Sign Reversal of anisotropic magnetoresistance in La0.7Ca0.3MnO3/STO ultrathin films|Himanshu Sharma,A. Tulapurkar,C. V. Tomy###
(628042, 628042)
 We present the observation of strain induced sign reversal of anisotropicmagnetoresistance (AMR) in LCMO (LCMO) ultrathin films (thickness 4 nm)deposited on ST<missing VAR>O (001) substrate (ST<missing VAR>O).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 4, 'nm', 0],[54.0, 6, 'nm', 1],[134.0, 4, 'nm', 2]

O
###Sign Reversal of anisotropic magnetoresistance in La0.7Ca0.3MnO3/STO ultrathin films|Himanshu Sharma,A. Tulapurkar,C. V. Tomy###
(628044, 628044)
 We present the observation of strain induced sign reversal of anisotropicmagnetoresistance (AMR) in LCMO (LCMO) ultrathin films (thickness 4 nm)deposited on ST<missing VAR>O (001) substrate (ST<missing VAR>O).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 4, 'nm', 0],[52.0, 6, 'nm', 1],[132.0, 4, 'nm', 2]

S
###Sign Reversal of anisotropic magnetoresistance in La0.7Ca0.3MnO3/STO ultrathin films|Himanshu Sharma,A. Tulapurkar,C. V. Tomy###
(628053, 628053)
 We present the observation of strain induced sign reversal of anisotropicmagnetoresistance (AMR) in LCMO (LCMO) ultrathin films (thickness 4 nm)deposited on ST<missing VAR>O (001) substrate (ST<missing VAR>O).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 4, 'nm', 0],[43.0, 6, 'nm', 1],[123.0, 4, 'nm', 2]

O
###Sign Reversal of anisotropic magnetoresistance in La0.7Ca0.3MnO3/STO ultrathin films|Himanshu Sharma,A. Tulapurkar,C. V. Tomy###
(628055, 628055)
 We present the observation of strain induced sign reversal of anisotropicmagnetoresistance (AMR) in LCMO (LCMO) ultrathin films (thickness 4 nm)deposited on ST<missing VAR>O (001) substrate (ST<missing VAR>O).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 4, 'nm', 0],[41.0, 6, 'nm', 1],[121.0, 4, 'nm', 2]

O/S
###Sign Reversal of anisotropic magnetoresistance in La0.7Ca0.3MnO3/STO ultrathin films|Himanshu Sharma,A. Tulapurkar,C. V. Tomy###
(628081, 628083)
 We have also observed unusually largeAMR in LCMO/ST<missing VAR>O thin films with thickness of 6 nm below but close to its Curietemperature (T<missing VAR>C) which decrease as the film thickness increases.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[47.0, 4, 'nm', 1],[13.0, 6, 'nm', 0],[93.0, 4, 'nm', 1]

O
###Sign Reversal of anisotropic magnetoresistance in La0.7Ca0.3MnO3/STO ultrathin films|Himanshu Sharma,A. Tulapurkar,C. V. Tomy###
(628085, 628085)
 We have also observed unusually largeAMR in LCMO/ST<missing VAR>O thin films with thickness of 6 nm below but close to its Curietemperature (T<missing VAR>C) which decrease as the film thickness increases.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 4, 'nm', 1],[11.0, 6, 'nm', 0],[91.0, 4, 'nm', 1]

C
###Sign Reversal of anisotropic magnetoresistance in La0.7Ca0.3MnO3/STO ultrathin films|Himanshu Sharma,A. Tulapurkar,C. V. Tomy###
(628115, 628115)
 We have also observed unusually largeAMR in LCMO/ST<missing VAR>O thin films with thickness of 6 nm below but close to its Curietemperature (T<missing VAR>C) which decrease as the film thickness increases.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 4, 'nm', 1],[19.0, 6, 'nm', 0],[61.0, 4, 'nm', 1]

In
###Absence of a transport signature of spin-orbit coupling in graphene with indium adatoms|Zhenzhao Jia,Baoming Yan,Jingjing Niu,Qi Han,Rui Zhu,Xiaosong Wu,Dapeng Yu###
(628346, 628346)
 Inparticular, great hope has been held for indium in strengthening the spin-orbitcoupling and realizing the quantum spin Hall effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

No
###Absence of a transport signature of spin-orbit coupling in graphene with indium adatoms|Zhenzhao Jia,Baoming Yan,Jingjing Niu,Qi Han,Rui Zhu,Xiaosong Wu,Dapeng Yu###
(628473, 628473)
 No signature of thespin-orbit coupling is found.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0
Abstract does not contain any numbers.

ISH
###Spin Hall noise|Akashdeep Kamra,Friedrich P. Witek,Sibylle Meyer,Hans Huebl,Stephan Geprägs,Rudolf Gross,Gerrit E. W. Bauer,Sebastian T. B. Goennenwein###
(628572, 628574)
 We measure the low-frequency thermal fluctuations of pure spin current in aPlatinum film deposited on yttrium iron garnet via the inverse spin Hall effect(ISHE)-mediated voltage noise as a function of the angle alpha between themagnetization and the transport direction.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin Hall noise|Akashdeep Kamra,Friedrich P. Witek,Sibylle Meyer,Hans Huebl,Stephan Geprägs,Rudolf Gross,Gerrit E. W. Bauer,Sebastian T. B. Goennenwein###
(628653, 628653)
 The results are consistent with thefluctuation dissipation theorem in terms of the recently discovered spin Hallmagnetoresistance (SMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ISH
###Spin Hall noise|Akashdeep Kamra,Friedrich P. Witek,Sibylle Meyer,Hans Huebl,Stephan Geprägs,Rudolf Gross,Gerrit E. W. Bauer,Sebastian T. B. Goennenwein###
(628700, 628702)
 We present a microscopic description of the alphadependence of the voltage noise in terms of spin current fluctuations and ISHE<missing VAR>.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Quantification of the spin-Hall anti-damping torque with a resonance spectrometer|Satoru Emori,Tianxiang Nan,Trevor M. Oxholm,Carl T. Boone,John G. Jones,Brandon M. Howe,Gail J. Brown,David E. Budil,Nian X. Sun###
(629082, 629082)
 Modification offerromagnetic resonance is observed as a function of small D<missing VAR>C current insub-mm-wide strips of bilayers, consisting of magnetically soft FeGaB andstrong spin-Hall metal Ta.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeGaB
###Quantification of the spin-Hall anti-damping torque with a resonance spectrometer|Satoru Emori,Tianxiang Nan,Trevor M. Oxholm,Carl T. Boone,John G. Jones,Brandon M. Howe,Gail J. Brown,David E. Budil,Nian X. Sun###
(629110, 629112)
 Modification offerromagnetic resonance is observed as a function of small D<missing VAR>C current insub-mm-wide strips of bilayers, consisting of magnetically soft FeGaB andstrong spin-Hall metal Ta.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ta
###Quantification of the spin-Hall anti-damping torque with a resonance spectrometer|Satoru Emori,Tianxiang Nan,Trevor M. Oxholm,Carl T. Boone,John G. Jones,Brandon M. Howe,Gail J. Brown,David E. Budil,Nian X. Sun###
(629125, 629125)
 Modification offerromagnetic resonance is observed as a function of small D<missing VAR>C current insub-mm-wide strips of bilayers, consisting of magnetically soft FeGaB andstrong spin-Hall metal Ta.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi1.5
###Electrical detection of the spin polarization due to charge flow in the surface state of the topological insulator Bi_1.5 Sb_0.5 Te_1.7 Se_1.3|Yuichiro Ando,Takahiro Hamasaki,Takayuki Kurokawa,Kouki Ichiba,Fan Yang,Mario Novak,Satoshi Sasaki,Kouji Segawa,Yoichi Ando,Masashi Shiraishi###
(629287, 629288)
Electrical detection of the spin polarization due to charge flow in the surface state of the topological insulator Bi1.5 Sb0.5 Te1.7 Se1.3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sb0.5
###Electrical detection of the spin polarization due to charge flow in the surface state of the topological insulator Bi_1.5 Sb_0.5 Te_1.7 Se_1.3|Yuichiro Ando,Takahiro Hamasaki,Takayuki Kurokawa,Kouki Ichiba,Fan Yang,Mario Novak,Satoshi Sasaki,Kouji Segawa,Yoichi Ando,Masashi Shiraishi###
(629290, 629291)
Electrical detection of the spin polarization due to charge flow in the surface state of the topological insulator Bi1.5 Sb0.5 Te1.7 Se1.3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Te1.7
###Electrical detection of the spin polarization due to charge flow in the surface state of the topological insulator Bi_1.5 Sb_0.5 Te_1.7 Se_1.3|Yuichiro Ando,Takahiro Hamasaki,Takayuki Kurokawa,Kouki Ichiba,Fan Yang,Mario Novak,Satoshi Sasaki,Kouji Segawa,Yoichi Ando,Masashi Shiraishi###
(629293, 629294)
Electrical detection of the spin polarization due to charge flow in the surface state of the topological insulator Bi1.5 Sb0.5 Te1.7 Se1.3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Se1.3
###Electrical detection of the spin polarization due to charge flow in the surface state of the topological insulator Bi_1.5 Sb_0.5 Te_1.7 Se_1.3|Yuichiro Ando,Takahiro Hamasaki,Takayuki Kurokawa,Kouki Ichiba,Fan Yang,Mario Novak,Satoshi Sasaki,Kouji Segawa,Yoichi Ando,Masashi Shiraishi###
(629296, 629297)
Electrical detection of the spin polarization due to charge flow in the surface state of the topological insulator Bi1.5 Sb0.5 Te1.7 Se1.3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi1.5Sb0.5Te1.7Se1.3
###Electrical detection of the spin polarization due to charge flow in the surface state of the topological insulator Bi_1.5 Sb_0.5 Te_1.7 Se_1.3|Yuichiro Ando,Takahiro Hamasaki,Takayuki Kurokawa,Kouki Ichiba,Fan Yang,Mario Novak,Satoshi Sasaki,Kouji Segawa,Yoichi Ando,Masashi Shiraishi###
(629380, 629387)
 The charge current in the bulk-insulatingtopological insulator Bi1.5Sb0.5Te1.7Se1.3 (BST<missing VAR>S) was injected/extractedthrough a ferromagnetic electrode made of Ni80Fe20, and an unusualcurrent-direction-dependent magnetoresistance gives evidence for the appearanceof spin polarization which leads to a spin-dependent resistance at theBST<missing VAR>S/Ni80Fe20 interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.26,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0.33999999999999997,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BS
###Electrical detection of the spin polarization due to charge flow in the surface state of the topological insulator Bi_1.5 Sb_0.5 Te_1.7 Se_1.3|Yuichiro Ando,Takahiro Hamasaki,Takayuki Kurokawa,Kouki Ichiba,Fan Yang,Mario Novak,Satoshi Sasaki,Kouji Segawa,Yoichi Ando,Masashi Shiraishi###
(629390, 629391)
 The charge current in the bulk-insulatingtopological insulator Bi1.5Sb0.5Te1.7Se1.3 (BST<missing VAR>S) was injected/extractedthrough a ferromagnetic electrode made of Ni80Fe20, and an unusualcurrent-direction-dependent magnetoresistance gives evidence for the appearanceof spin polarization which leads to a spin-dependent resistance at theBST<missing VAR>S/Ni80Fe20 interface.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Electrical detection of the spin polarization due to charge flow in the surface state of the topological insulator Bi_1.5 Sb_0.5 Te_1.7 Se_1.3|Yuichiro Ando,Takahiro Hamasaki,Takayuki Kurokawa,Kouki Ichiba,Fan Yang,Mario Novak,Satoshi Sasaki,Kouji Segawa,Yoichi Ando,Masashi Shiraishi###
(629393, 629393)
 The charge current in the bulk-insulatingtopological insulator Bi1.5Sb0.5Te1.7Se1.3 (BST<missing VAR>S) was injected/extractedthrough a ferromagnetic electrode made of Ni80Fe20, and an unusualcurrent-direction-dependent magnetoresistance gives evidence for the appearanceof spin polarization which leads to a spin-dependent resistance at theBST<missing VAR>S/Ni80Fe20 interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni80Fe20
###Electrical detection of the spin polarization due to charge flow in the surface state of the topological insulator Bi_1.5 Sb_0.5 Te_1.7 Se_1.3|Yuichiro Ando,Takahiro Hamasaki,Takayuki Kurokawa,Kouki Ichiba,Fan Yang,Mario Novak,Satoshi Sasaki,Kouji Segawa,Yoichi Ando,Masashi Shiraishi###
(629415, 629418)
 The charge current in the bulk-insulatingtopological insulator Bi1.5Sb0.5Te1.7Se1.3 (BST<missing VAR>S) was injected/extractedthrough a ferromagnetic electrode made of Ni80Fe20, and an unusualcurrent-direction-dependent magnetoresistance gives evidence for the appearanceof spin polarization which leads to a spin-dependent resistance at theBST<missing VAR>S/Ni80Fe20 interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BS
###Electrical detection of the spin polarization due to charge flow in the surface state of the topological insulator Bi_1.5 Sb_0.5 Te_1.7 Se_1.3|Yuichiro Ando,Takahiro Hamasaki,Takayuki Kurokawa,Kouki Ichiba,Fan Yang,Mario Novak,Satoshi Sasaki,Kouji Segawa,Yoichi Ando,Masashi Shiraishi###
(629472, 629473)
 The charge current in the bulk-insulatingtopological insulator Bi1.5Sb0.5Te1.7Se1.3 (BST<missing VAR>S) was injected/extractedthrough a ferromagnetic electrode made of Ni80Fe20, and an unusualcurrent-direction-dependent magnetoresistance gives evidence for the appearanceof spin polarization which leads to a spin-dependent resistance at theBST<missing VAR>S/Ni80Fe20 interface.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S/Ni80Fe20
###Electrical detection of the spin polarization due to charge flow in the surface state of the topological insulator Bi_1.5 Sb_0.5 Te_1.7 Se_1.3|Yuichiro Ando,Takahiro Hamasaki,Takayuki Kurokawa,Kouki Ichiba,Fan Yang,Mario Novak,Satoshi Sasaki,Kouji Segawa,Yoichi Ando,Masashi Shiraishi###
(629475, 629480)
 The charge current in the bulk-insulatingtopological insulator Bi1.5Sb0.5Te1.7Se1.3 (BST<missing VAR>S) was injected/extractedthrough a ferromagnetic electrode made of Ni80Fe20, and an unusualcurrent-direction-dependent magnetoresistance gives evidence for the appearanceof spin polarization which leads to a spin-dependent resistance at theBST<missing VAR>S/Ni80Fe20 interface.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

In
###Electrical detection of the spin polarization due to charge flow in the surface state of the topological insulator Bi_1.5 Sb_0.5 Te_1.7 Se_1.3|Yuichiro Ando,Takahiro Hamasaki,Takayuki Kurokawa,Kouki Ichiba,Fan Yang,Mario Novak,Satoshi Sasaki,Kouji Segawa,Yoichi Ando,Masashi Shiraishi###
(629485, 629485)
 In contrast, our control experiment on Bi2Se3 gavenull result.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Se3
###Electrical detection of the spin polarization due to charge flow in the surface state of the topological insulator Bi_1.5 Sb_0.5 Te_1.7 Se_1.3|Yuichiro Ando,Takahiro Hamasaki,Takayuki Kurokawa,Kouki Ichiba,Fan Yang,Mario Novak,Satoshi Sasaki,Kouji Segawa,Yoichi Ando,Masashi Shiraishi###
(629498, 629501)
 In contrast, our control experiment on Bi2Se3 gavenull result.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Perfect charge compensation in WTe2 for the extraordinary magnetoresistance: From bulk to monolayer|H. Y. Lv,W. J. Lu,D. F. Shao,Y. Liu,S. G. Tan,Y. P. Sun###
(629818, 629820)
Perfect charge compensation in WTe2 for the extraordinary magnetoresistance From bulk to monolayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 514, ',', 3]

WTe2
###Perfect charge compensation in WTe2 for the extraordinary magnetoresistance: From bulk to monolayer|H. Y. Lv,W. J. Lu,D. F. Shao,Y. Liu,S. G. Tan,Y. P. Sun###
(629847, 629849)
 The electronic structure of WTe2 bulk and layers are investigated by usingthe first principles calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 514, ',', 2]

WTe2
###Perfect charge compensation in WTe2 for the extraordinary magnetoresistance: From bulk to monolayer|H. Y. Lv,W. J. Lu,D. F. Shao,Y. Liu,S. G. Tan,Y. P. Sun###
(629908, 629910)
 The perfect electron-hole (n-p) chargecompensation and high carrier mobilities are found in WTe2 bulk, which mayresult in the large and non-saturating magnetoresistance (MR) observed veryrecently in the experiment [Ali et al.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 514, ',', 1]

WTe2
###Perfect charge compensation in WTe2 for the extraordinary magnetoresistance: From bulk to monolayer|H. Y. Lv,W. J. Lu,D. F. Shao,Y. Liu,S. G. Tan,Y. P. Sun###
(629987, 629989)
 The monolayerand bilayer of WTe2 preserve the semimetallic property, with the equal hole andelectron carrier concentrations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 514, ',', 1]

WTe2
###Perfect charge compensation in WTe2 for the extraordinary magnetoresistance: From bulk to monolayer|H. Y. Lv,W. J. Lu,D. F. Shao,Y. Liu,S. G. Tan,Y. P. Sun###
(630040, 630042)
 Moreover, the very high carrier mobilities arealso found in WTe2 monolayer, indicating that the WTe2 monolayer would have thesame extraordinary MR effect as the bulk, which could have promisingapplications in nanostructured magnetic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 514, ',', 2]

WTe2
###Perfect charge compensation in WTe2 for the extraordinary magnetoresistance: From bulk to monolayer|H. Y. Lv,W. J. Lu,D. F. Shao,Y. Liu,S. G. Tan,Y. P. Sun###
(630053, 630055)
 Moreover, the very high carrier mobilities arealso found in WTe2 monolayer, indicating that the WTe2 monolayer would have thesame extraordinary MR effect as the bulk, which could have promisingapplications in nanostructured magnetic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 514, ',', 2]

Nd1-x
###The Electronic and Magnetic Properties of Magnetoresistant Nd1-xSrxMnAsO Oxyarsenides|E. J. Wildman,N. Emery,A. C. Mclaughlin###
(630124, 630127)
The Electronic and Magnetic Properties of Magnetoresistant Nd1-xSrxMnAsO Oxyarsenides.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

MnAsO
###The Electronic and Magnetic Properties of Magnetoresistant Nd1-xSrxMnAsO Oxyarsenides|E. J. Wildman,N. Emery,A. C. Mclaughlin###
(630129, 630131)
The Electronic and Magnetic Properties of Magnetoresistant Nd1-xSrxMnAsO Oxyarsenides.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nd1-x
###The Electronic and Magnetic Properties of Magnetoresistant Nd1-xSrxMnAsO Oxyarsenides|E. J. Wildman,N. Emery,A. C. Mclaughlin###
(630140, 630143)
 The oxypnictides Nd1-xSrxMnAsO have been successfully synthesised with x<missing VAR> upto 0.1.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

MnAsO
###The Electronic and Magnetic Properties of Magnetoresistant Nd1-xSrxMnAsO Oxyarsenides|E. J. Wildman,N. Emery,A. C. Mclaughlin###
(630145, 630147)
 The oxypnictides Nd1-xSrxMnAsO have been successfully synthesised with x<missing VAR> upto 0.1.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr
###The Electronic and Magnetic Properties of Magnetoresistant Nd1-xSrxMnAsO Oxyarsenides|E. J. Wildman,N. Emery,A. C. Mclaughlin###
(630206, 630206)
 A synchrotron X<missing VAR>-ray diffraction study demonstrates that there is nochange in crystal symmetry upon doping with Sr.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nd
###The Electronic and Magnetic Properties of Magnetoresistant Nd1-xSrxMnAsO Oxyarsenides|E. J. Wildman,N. Emery,A. C. Mclaughlin###
(630226, 630226)
 An expansion of the inter-layerdistance between Nd-O-Nd and As-Mn-As blocks is observed with increasing x<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###The Electronic and Magnetic Properties of Magnetoresistant Nd1-xSrxMnAsO Oxyarsenides|E. J. Wildman,N. Emery,A. C. Mclaughlin###
(630228, 630228)
 An expansion of the inter-layerdistance between Nd-O-Nd and As-Mn-As blocks is observed with increasing x<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nd
###The Electronic and Magnetic Properties of Magnetoresistant Nd1-xSrxMnAsO Oxyarsenides|E. J. Wildman,N. Emery,A. C. Mclaughlin###
(630230, 630230)
 An expansion of the inter-layerdistance between Nd-O-Nd and As-Mn-As blocks is observed with increasing x<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###The Electronic and Magnetic Properties of Magnetoresistant Nd1-xSrxMnAsO Oxyarsenides|E. J. Wildman,N. Emery,A. C. Mclaughlin###
(630234, 630234)
 An expansion of the inter-layerdistance between Nd-O-Nd and As-Mn-As blocks is observed with increasing x<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###The Electronic and Magnetic Properties of Magnetoresistant Nd1-xSrxMnAsO Oxyarsenides|E. J. Wildman,N. Emery,A. C. Mclaughlin###
(630236, 630236)
 An expansion of the inter-layerdistance between Nd-O-Nd and As-Mn-As blocks is observed with increasing x<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###The Electronic and Magnetic Properties of Magnetoresistant Nd1-xSrxMnAsO Oxyarsenides|E. J. Wildman,N. Emery,A. C. Mclaughlin###
(630238, 630238)
 An expansion of the inter-layerdistance between Nd-O-Nd and As-Mn-As blocks is observed with increasing x<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###The Electronic and Magnetic Properties of Magnetoresistant Nd1-xSrxMnAsO Oxyarsenides|E. J. Wildman,N. Emery,A. C. Mclaughlin###
(630291, 630291)
Results from variable temperature neutron diffraction and resistivitymeasurements show that the local moment antiferromagnetic order of the Mn spinsis preserved as the [MnAs]- layers are hole doped and the materials are drivenmetallic for x<missing VAR> > 0.05.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HgTe
###Aharonov Bohm effect in 2D topological insulator|G. M. Gusev,Z. D. Kvon,O. A. Shegai,N. N. Mikhailov,S. A. Dvoretsky###
(630419, 630420)
 We present magnetotransport measurements in HgTe quantum well with invertedband structure, which expected to be a two-dimensional topological insulatorhaving the bulk gap with helical gapless states at the edge.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 2, 'D', 1],[168.0, 100, 'nm', 3]

GaMnAs/AlGaMnAs
###Magnetic Coupling in Ferromagnetic Semiconductor GaMnAs/AlGaMnAs Bilayer Devices|Y. F. Cao,Yanyong Li,Yuanyuan Li,G. N. Wei,Y. Ji,K. Y. Wang###
(630609, 630616)
Magnetic Coupling in Ferromagnetic Semiconductor GaMnAs/AlGaMnAs Bilayer Devices.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[171.0, 0.6, 'to', 3]

GaMnAs/AlGaMnAs
###Magnetic Coupling in Ferromagnetic Semiconductor GaMnAs/AlGaMnAs Bilayer Devices|Y. F. Cao,Yanyong Li,Yuanyuan Li,G. N. Wei,Y. Ji,K. Y. Wang###
(630652, 630659)
 We carefully investigated the ferromagnetic coupling in the as-grown andannealed ferromagnetic semiconductor GaMnAs/AlGaMnAs bilayer devices.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[128.0, 0.6, 'to', 2]

GaMnAs
###Magnetic Coupling in Ferromagnetic Semiconductor GaMnAs/AlGaMnAs Bilayer Devices|Y. F. Cao,Yanyong Li,Yuanyuan Li,G. N. Wei,Y. Ji,K. Y. Wang###
(630700, 630702)
 Weobserved that the magnetic interaction between the two layers strongly affectsthe magnetoresistance of the GaMnAs layer with applying out of plane magneticfield.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 0.6, 'to', 1]

AlGaMnAs
###Magnetic Coupling in Ferromagnetic Semiconductor GaMnAs/AlGaMnAs Bilayer Devices|Y. F. Cao,Yanyong Li,Yuanyuan Li,G. N. Wei,Y. Ji,K. Y. Wang###
(630743, 630746)
 After low temperature annealing, the magnetic easy axis of the AlGaMnAslayer switches from out of plane into in-plane and the interlayer couplingefficiency is reduced from up to 0.6 to less than 0.4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 0.6, 'to', 0]

WTe2
###Raman scattering investigation of large positive magnetoresistance material WTe$_2$|W. -D. Kong,S. -F. Wu,P. Richard,C. -S. Lian,J. -T. Wang,C. -L. Yang,Y. -G. Shi,H. Ding###
(630862, 630864)
Raman scattering investigation of large positive magnetoresistance material WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 5, 'A', 2],[60.0, 2, 'A', 2],[70.0, 33, 'Raman', 2],[199.0, 160.6, 'cm', 4]

WTe2
###Raman scattering investigation of large positive magnetoresistance material WTe$_2$|W. -D. Kong,S. -F. Wu,P. Richard,C. -S. Lian,J. -T. Wang,C. -L. Yang,Y. -G. Shi,H. Ding###
(630883, 630885)
 We have performed polarized Raman scattering measurements on WTe2, forwhich an extremely large positive magnetoresistance has been reported recently.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 5, 'A', 1],[39.0, 2, 'A', 1],[49.0, 33, 'Raman', 1],[178.0, 160.6, 'cm', 3]

C2
###Raman scattering investigation of large positive magnetoresistance material WTe$_2$|W. -D. Kong,S. -F. Wu,P. Richard,C. -S. Lian,J. -T. Wang,C. -L. Yang,Y. -G. Shi,H. Ding###
(630999, 631000)
The angular dependence of the intensity of the peaks observed is consistentwith the Raman tensors of the C2v<missing VAR> point group symmetry attributed toWTe2.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 5, 'A', 1],[75.0, 2, 'A', 1],[65.0, 33, 'Raman', 1],[63.0, 160.6, 'cm', 1]

WTe2
###Raman scattering investigation of large positive magnetoresistance material WTe$_2$|W. -D. Kong,S. -F. Wu,P. Richard,C. -S. Lian,J. -T. Wang,C. -L. Yang,Y. -G. Shi,H. Ding###
(631014, 631016)
The angular dependence of the intensity of the peaks observed is consistentwith the Raman tensors of the C2v<missing VAR> point group symmetry attributed toWTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 5, 'A', 1],[90.0, 2, 'A', 1],[80.0, 33, 'Raman', 1],[47.0, 160.6, 'cm', 1]

Tc
###Change in sign of the Hall coefficient from Fermi surface curvature in underdoped high Tc copper oxide superconductors|N. Harrison,S. E. Sebastian###
(631133, 631133)
Change in sign of the Hall coefficient from Fermi surface curvature in underdoped high Tc copper oxide superconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###Change in sign of the Hall coefficient from Fermi surface curvature in underdoped high Tc copper oxide superconductors|N. Harrison,S. E. Sebastian###
(631166, 631166)
 It has recently been proposed that the Fermi surface of underdoped high Tccopper oxide materials within the charge-ordered regime consists of adiamond-shaped electron pocket constructed from arcs connected at vertices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Surface-state-dominated transport in crystals of the topological crystalline insulator In-doped Pb$_{1-x}$Sn$_x$Te|Ruidan Zhong,Xugang He,John A. Schneeloch,Cheng Zhang,Tiansheng Liu,Ivo Pletikosic,Qiang Li,Wei Ku,Tonica Valla,J. M. Tranquada,Genda Gu###
(631385, 631385)
Surface-state-dominated transport in crystals of the topological crystalline insulator In-doped Pb1-xSnx<missing VAR>Te.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[237.0, 30, 'K', 4]

Pb1-xSn
###Surface-state-dominated transport in crystals of the topological crystalline insulator In-doped Pb$_{1-x}$Sn$_x$Te|Ruidan Zhong,Xugang He,John A. Schneeloch,Cheng Zhang,Tiansheng Liu,Ivo Pletikosic,Qiang Li,Wei Ku,Tonica Valla,J. M. Tranquada,Genda Gu###
(631389, 631393)
Surface-state-dominated transport in crystals of the topological crystalline insulator In-doped Pb1-xSnx<missing VAR>Te.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[229.0, 30, 'K', 4]

Te
###Surface-state-dominated transport in crystals of the topological crystalline insulator In-doped Pb$_{1-x}$Sn$_x$Te|Ruidan Zhong,Xugang He,John A. Schneeloch,Cheng Zhang,Tiansheng Liu,Ivo Pletikosic,Qiang Li,Wei Ku,Tonica Valla,J. M. Tranquada,Genda Gu###
(631395, 631395)
Surface-state-dominated transport in crystals of the topological crystalline insulator In-doped Pb1-xSnx<missing VAR>Te.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[227.0, 30, 'K', 4]

Pb1-xSn
###Surface-state-dominated transport in crystals of the topological crystalline insulator In-doped Pb$_{1-x}$Sn$_x$Te|Ruidan Zhong,Xugang He,John A. Schneeloch,Cheng Zhang,Tiansheng Liu,Ivo Pletikosic,Qiang Li,Wei Ku,Tonica Valla,J. M. Tranquada,Genda Gu###
(631534, 631538)
 Here we report a series of indium-dopedPb1-xSnx<missing VAR>Te compounds that manifest huge bulk resistivities togetherwith strong evidence of topological surface states, based onthickness-dependent transport studies and magnetoresistance measurements.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[84.0, 30, 'K', 1]

Te
###Surface-state-dominated transport in crystals of the topological crystalline insulator In-doped Pb$_{1-x}$Sn$_x$Te|Ruidan Zhong,Xugang He,John A. Schneeloch,Cheng Zhang,Tiansheng Liu,Ivo Pletikosic,Qiang Li,Wei Ku,Tonica Valla,J. M. Tranquada,Genda Gu###
(631540, 631540)
 Here we report a series of indium-dopedPb1-xSnx<missing VAR>Te compounds that manifest huge bulk resistivities togetherwith strong evidence of topological surface states, based onthickness-dependent transport studies and magnetoresistance measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 30, 'K', 1]

Na3Bi
###Bulk crystal growth and electronic characterization of the 3D Dirac Semimetal Na3Bi|Satya K. Kushwaha,Jason W. Krizan,Benjamin E. Feldman,Andras Gyenis,Mallika T. Randeria,Jun Xiong,Su-Yang Xu,Nasser Alidoust,Ilya Belopolski,Tian Liang,M. Zahid Hasan,N. P. Ong,A. Yazdani,R. J. Cava###
(631654, 631656)
Bulk crystal growth and electronic characterization of the 3D Dirac Semimetal Na3Bi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 3, 'D', 0],[192.0, 3, 'D', 3]

Na3Bi
###Bulk crystal growth and electronic characterization of the 3D Dirac Semimetal Na3Bi|Satya K. Kushwaha,Jason W. Krizan,Benjamin E. Feldman,Andras Gyenis,Mallika T. Randeria,Jun Xiong,Su-Yang Xu,Nasser Alidoust,Ilya Belopolski,Tian Liang,M. Zahid Hasan,N. P. Ong,A. Yazdani,R. J. Cava###
(631669, 631671)
 High quality hexagon plate-like Na3Bi crystals with large (001) planesurfaces were grown from a molten Na flux.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 3, 'D', 1],[177.0, 3, 'D', 2]

Na
###Bulk crystal growth and electronic characterization of the 3D Dirac Semimetal Na3Bi|Satya K. Kushwaha,Jason W. Krizan,Benjamin E. Feldman,Andras Gyenis,Mallika T. Randeria,Jun Xiong,Su-Yang Xu,Nasser Alidoust,Ilya Belopolski,Tian Liang,M. Zahid Hasan,N. P. Ong,A. Yazdani,R. J. Cava###
(631698, 631698)
 High quality hexagon plate-like Na3Bi crystals with large (001) planesurfaces were grown from a molten Na flux.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 3, 'D', 1],[150.0, 3, 'D', 2]

S
###Bulk crystal growth and electronic characterization of the 3D Dirac Semimetal Na3Bi|Satya K. Kushwaha,Jason W. Krizan,Benjamin E. Feldman,Andras Gyenis,Mallika T. Randeria,Jun Xiong,Su-Yang Xu,Nasser Alidoust,Ilya Belopolski,Tian Liang,M. Zahid Hasan,N. P. Ong,A. Yazdani,R. J. Cava###
(631729, 631729)
 The freshly cleaved crystals wereanalyzed by low temperature scanning tunneling microscopy (STM) andangle-resolved photoemission spectroscopy (ARPES), allowing for thecharacterization of the three-dimensional (3D) Dirac semimetal (TDS) behaviorand the observation of the topological surface states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 3, 'D', 2],[119.0, 3, 'D', 1]

S
###Bulk crystal growth and electronic characterization of the 3D Dirac Semimetal Na3Bi|Satya K. Kushwaha,Jason W. Krizan,Benjamin E. Feldman,Andras Gyenis,Mallika T. Randeria,Jun Xiong,Su-Yang Xu,Nasser Alidoust,Ilya Belopolski,Tian Liang,M. Zahid Hasan,N. P. Ong,A. Yazdani,R. J. Cava###
(631750, 631750)
 The freshly cleaved crystals wereanalyzed by low temperature scanning tunneling microscopy (STM) andangle-resolved photoemission spectroscopy (ARPES), allowing for thecharacterization of the three-dimensional (3D) Dirac semimetal (TDS) behaviorand the observation of the topological surface states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 3, 'D', 2],[98.0, 3, 'D', 1]

S
###Bulk crystal growth and electronic characterization of the 3D Dirac Semimetal Na3Bi|Satya K. Kushwaha,Jason W. Krizan,Benjamin E. Feldman,Andras Gyenis,Mallika T. Randeria,Jun Xiong,Su-Yang Xu,Nasser Alidoust,Ilya Belopolski,Tian Liang,M. Zahid Hasan,N. P. Ong,A. Yazdani,R. J. Cava###
(631783, 631783)
 The freshly cleaved crystals wereanalyzed by low temperature scanning tunneling microscopy (STM) andangle-resolved photoemission spectroscopy (ARPES), allowing for thecharacterization of the three-dimensional (3D) Dirac semimetal (TDS) behaviorand the observation of the topological surface states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 3, 'D', 2],[65.0, 3, 'D', 1]

S
###Bulk crystal growth and electronic characterization of the 3D Dirac Semimetal Na3Bi|Satya K. Kushwaha,Jason W. Krizan,Benjamin E. Feldman,Andras Gyenis,Mallika T. Randeria,Jun Xiong,Su-Yang Xu,Nasser Alidoust,Ilya Belopolski,Tian Liang,M. Zahid Hasan,N. P. Ong,A. Yazdani,R. J. Cava###
(631852, 631852)
 Landau levels (LL) wereobserved, and the energy-momentum relations exhibited a linear dispersionrelationship, characteristic of the 3D TDS nature of Na3Bi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[204.0, 3, 'D', 3],[4.0, 3, 'D', 0]

Na3Bi
###Bulk crystal growth and electronic characterization of the 3D Dirac Semimetal Na3Bi|Satya K. Kushwaha,Jason W. Krizan,Benjamin E. Feldman,Andras Gyenis,Mallika T. Randeria,Jun Xiong,Su-Yang Xu,Nasser Alidoust,Ilya Belopolski,Tian Liang,M. Zahid Hasan,N. P. Ong,A. Yazdani,R. J. Cava###
(631858, 631860)
 Landau levels (LL) wereobserved, and the energy-momentum relations exhibited a linear dispersionrelationship, characteristic of the 3D TDS nature of Na3Bi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[210.0, 3, 'D', 3],[10.0, 3, 'D', 0]

In
###Bulk crystal growth and electronic characterization of the 3D Dirac Semimetal Na3Bi|Satya K. Kushwaha,Jason W. Krizan,Benjamin E. Feldman,Andras Gyenis,Mallika T. Randeria,Jun Xiong,Su-Yang Xu,Nasser Alidoust,Ilya Belopolski,Tian Liang,M. Zahid Hasan,N. P. Ong,A. Yazdani,R. J. Cava###
(631863, 631863)
 In transportmeasurements on Na3Bi crystals the linear magnetoresistance and Shubnikov-deHaas (SdH) quantum oscillations are observed for the first time.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[215.0, 3, 'D', 4],[15.0, 3, 'D', 1]

Na3Bi
###Bulk crystal growth and electronic characterization of the 3D Dirac Semimetal Na3Bi|Satya K. Kushwaha,Jason W. Krizan,Benjamin E. Feldman,Andras Gyenis,Mallika T. Randeria,Jun Xiong,Su-Yang Xu,Nasser Alidoust,Ilya Belopolski,Tian Liang,M. Zahid Hasan,N. P. Ong,A. Yazdani,R. J. Cava###
(631872, 631874)
 In transportmeasurements on Na3Bi crystals the linear magnetoresistance and Shubnikov-deHaas (SdH) quantum oscillations are observed for the first time.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[224.0, 3, 'D', 4],[24.0, 3, 'D', 1]

H
###Bulk crystal growth and electronic characterization of the 3D Dirac Semimetal Na3Bi|Satya K. Kushwaha,Jason W. Krizan,Benjamin E. Feldman,Andras Gyenis,Mallika T. Randeria,Jun Xiong,Su-Yang Xu,Nasser Alidoust,Ilya Belopolski,Tian Liang,M. Zahid Hasan,N. P. Ong,A. Yazdani,R. J. Cava###
(631895, 631895)
 In transportmeasurements on Na3Bi crystals the linear magnetoresistance and Shubnikov-deHaas (SdH) quantum oscillations are observed for the first time.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[247.0, 3, 'D', 4],[47.0, 3, 'D', 1]

H
###Observation of quantum transport features in graphene devices fabricated utilizing a nano-manipulating probe technique|Christopher Coleman,Davie Mtsuko,Chris Botha,Somnath Bhattacharyyaa###
(632051, 632051)
 From the analysis of the SdH oscillations we show that multilayergraphene devices have a carrier density and effective mass (m<missing VAR> 0.042me -0.083me) comparable to those of bilayer and trilayer graphene.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 4, 'T', 1],[14.0, 30, 'K', 1],[33.0, 0.042, 'me', 0],[81.0, 22, 'to', 1],[82.0, 90, 'fs', 1],[96.0, 5, 'to', 1],[97.0, 15, 'meV', 1]

In
###Anisotropic magnetoresistance driven by surface spin orbit scattering|Steven S. -L. Zhang,Giovanni Vignale,Shufeng Zhang###
(632176, 632176)
 In a bilayer consisting of an insulator (I) and a ferromagnetic metal (FM),interfacial spin orbit scattering leads to spin mixing of the two conductingchannels of the FM<missing VAR>, which results in an unconventional anisotropicmagnetoresistance (AMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(I)
###Anisotropic magnetoresistance driven by surface spin orbit scattering|Steven S. -L. Zhang,Giovanni Vignale,Shufeng Zhang###
(632190, 632192)
 In a bilayer consisting of an insulator (I) and a ferromagnetic metal (FM),interfacial spin orbit scattering leads to spin mixing of the two conductingchannels of the FM<missing VAR>, which results in an unconventional anisotropicmagnetoresistance (AMR).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Anisotropic magnetoresistance driven by surface spin orbit scattering|Steven S. -L. Zhang,Giovanni Vignale,Shufeng Zhang###
(632203, 632203)
 In a bilayer consisting of an insulator (I) and a ferromagnetic metal (FM),interfacial spin orbit scattering leads to spin mixing of the two conductingchannels of the FM<missing VAR>, which results in an unconventional anisotropicmagnetoresistance (AMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Anisotropic magnetoresistance driven by surface spin orbit scattering|Steven S. -L. Zhang,Giovanni Vignale,Shufeng Zhang###
(632240, 632240)
 In a bilayer consisting of an insulator (I) and a ferromagnetic metal (FM),interfacial spin orbit scattering leads to spin mixing of the two conductingchannels of the FM<missing VAR>, which results in an unconventional anisotropicmagnetoresistance (AMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Anisotropic magnetoresistance driven by surface spin orbit scattering|Steven S. -L. Zhang,Giovanni Vignale,Shufeng Zhang###
(632422, 632422)
 We also determine the dependence of the AMR on filmthickness as well as spin polarization of the FM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbSrTiO3
###Electron degeneracy and intrinsic magnetic properties of epitaxial Nb:SrTiO$_3$ thin-films controlled by defects|A. Sarantopoulos,E. Ferreiro-Vila,V. Pardo,C. Magen,M. H. Aguirre,F. Rivadulla###
(632450, 632454)
Electron degeneracy and intrinsic magnetic properties of epitaxial NbSrTiO3 thin-films controlled by defects.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Electron degeneracy and intrinsic magnetic properties of epitaxial Nb:SrTiO$_3$ thin-films controlled by defects|A. Sarantopoulos,E. Ferreiro-Vila,V. Pardo,C. Magen,M. H. Aguirre,F. Rivadulla###
(632489, 632492)
 We report thermoelectric power experiments in e<missing VAR>-doped thin films of SrTiO3(ST<missing VAR>O) which demonstrate that the electronic band degeneracy can be liftedthrough defect management during growth.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Electron degeneracy and intrinsic magnetic properties of epitaxial Nb:SrTiO$_3$ thin-films controlled by defects|A. Sarantopoulos,E. Ferreiro-Vila,V. Pardo,C. Magen,M. H. Aguirre,F. Rivadulla###
(632496, 632496)
 We report thermoelectric power experiments in e<missing VAR>-doped thin films of SrTiO3(ST<missing VAR>O) which demonstrate that the electronic band degeneracy can be liftedthrough defect management during growth.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Electron degeneracy and intrinsic magnetic properties of epitaxial Nb:SrTiO$_3$ thin-films controlled by defects|A. Sarantopoulos,E. Ferreiro-Vila,V. Pardo,C. Magen,M. H. Aguirre,F. Rivadulla###
(632498, 632498)
 We report thermoelectric power experiments in e<missing VAR>-doped thin films of SrTiO3(ST<missing VAR>O) which demonstrate that the electronic band degeneracy can be liftedthrough defect management during growth.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Electron degeneracy and intrinsic magnetic properties of epitaxial Nb:SrTiO$_3$ thin-films controlled by defects|A. Sarantopoulos,E. Ferreiro-Vila,V. Pardo,C. Magen,M. H. Aguirre,F. Rivadulla###
(632680, 632680)
 The phenomenology reported inthis paper for tetragonally distorted e<missing VAR>-doped ST<missing VAR>O thin films, is similarto thatobserved in LaAlO3/ST<missing VAR>O interfaces and magnetic ST<missing VAR>O quantum wells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Electron degeneracy and intrinsic magnetic properties of epitaxial Nb:SrTiO$_3$ thin-films controlled by defects|A. Sarantopoulos,E. Ferreiro-Vila,V. Pardo,C. Magen,M. H. Aguirre,F. Rivadulla###
(632682, 632682)
 The phenomenology reported inthis paper for tetragonally distorted e<missing VAR>-doped ST<missing VAR>O thin films, is similarto thatobserved in LaAlO3/ST<missing VAR>O interfaces and magnetic ST<missing VAR>O quantum wells.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaAlO3/S
###Electron degeneracy and intrinsic magnetic properties of epitaxial Nb:SrTiO$_3$ thin-films controlled by defects|A. Sarantopoulos,E. Ferreiro-Vila,V. Pardo,C. Magen,M. H. Aguirre,F. Rivadulla###
(632700, 632705)
 The phenomenology reported inthis paper for tetragonally distorted e<missing VAR>-doped ST<missing VAR>O thin films, is similarto thatobserved in LaAlO3/ST<missing VAR>O interfaces and magnetic ST<missing VAR>O quantum wells.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

O
###Electron degeneracy and intrinsic magnetic properties of epitaxial Nb:SrTiO$_3$ thin-films controlled by defects|A. Sarantopoulos,E. Ferreiro-Vila,V. Pardo,C. Magen,M. H. Aguirre,F. Rivadulla###
(632707, 632707)
 The phenomenology reported inthis paper for tetragonally distorted e<missing VAR>-doped ST<missing VAR>O thin films, is similarto thatobserved in LaAlO3/ST<missing VAR>O interfaces and magnetic ST<missing VAR>O quantum wells.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Electron degeneracy and intrinsic magnetic properties of epitaxial Nb:SrTiO$_3$ thin-films controlled by defects|A. Sarantopoulos,E. Ferreiro-Vila,V. Pardo,C. Magen,M. H. Aguirre,F. Rivadulla###
(632715, 632715)
 The phenomenology reported inthis paper for tetragonally distorted e<missing VAR>-doped ST<missing VAR>O thin films, is similarto thatobserved in LaAlO3/ST<missing VAR>O interfaces and magnetic ST<missing VAR>O quantum wells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Electron degeneracy and intrinsic magnetic properties of epitaxial Nb:SrTiO$_3$ thin-films controlled by defects|A. Sarantopoulos,E. Ferreiro-Vila,V. Pardo,C. Magen,M. H. Aguirre,F. Rivadulla###
(632717, 632717)
 The phenomenology reported inthis paper for tetragonally distorted e<missing VAR>-doped ST<missing VAR>O thin films, is similarto thatobserved in LaAlO3/ST<missing VAR>O interfaces and magnetic ST<missing VAR>O quantum wells.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TbTe3
###Slow oscillations of in-plane magnetoresistance in strongly anisotropic quasi-two-dimensional rare-earth tritellurides|P. D. Grigoriev,A. A. Sinchenko,P. Lejay,O. Leynaud,V. N. Zverev,P. Monceau###
(632930, 632932)
 ForTbTe3 and GdTe3 we obtain the estimate tzapprox 1 meV.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GdTe3
###Slow oscillations of in-plane magnetoresistance in strongly anisotropic quasi-two-dimensional rare-earth tritellurides|P. D. Grigoriev,A. A. Sinchenko,P. Lejay,O. Leynaud,V. N. Zverev,P. Monceau###
(632936, 632938)
 ForTbTe3 and GdTe3 we obtain the estimate tzapprox 1 meV.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Slow oscillations of in-plane magnetoresistance in strongly anisotropic quasi-two-dimensional rare-earth tritellurides|P. D. Grigoriev,A. A. Sinchenko,P. Lejay,O. Leynaud,V. N. Zverev,P. Monceau###
(632955, 632955)
 ForTbTe3 and GdTe3 we obtain the estimate tzapprox 1 meV.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Zero-field dissipationless chiral edge transport and the nature of dissipation in the quantum anomalous Hall state|Cui-Zu Chang,Weiwei Zhao,Duk Y. Kim,Peng Wei,J. K. Jain,Chaoxing Liu,Moses H. W. Chan,Jagadeesh S. Moodera###
(633012, 633012)
 The quantum anomalous Hall (Q<missing VAR>AH) effect is predicted to possess, at zeromagnetic field, chiral edge channels that conduct spin polarized currentwithout dissipation.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Zero-field dissipationless chiral edge transport and the nature of dissipation in the quantum anomalous Hall state|Cui-Zu Chang,Weiwei Zhao,Duk Y. Kim,Peng Wei,J. K. Jain,Chaoxing Liu,Moses H. W. Chan,Jagadeesh S. Moodera###
(633085, 633085)
 While edge channels have been observed in previousexperimental studies of the Q<missing VAR>AH effect, their dissipationless nature at a zeromagnetic field has not been convincingly demonstrated.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Zero-field dissipationless chiral edge transport and the nature of dissipation in the quantum anomalous Hall state|Cui-Zu Chang,Weiwei Zhao,Duk Y. Kim,Peng Wei,J. K. Jain,Chaoxing Liu,Moses H. W. Chan,Jagadeesh S. Moodera###
(633224, 633224)
 By studying the onset of dissipation, we also identify the origin ofdissipative channels and clarify the surprising observation that the criticaltemperature of the Q<missing VAR>AH effect is two orders of magnitude smaller than the Curietemperature of ferromagnetism.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Negative Magnetoresistance in Amorphous Indium Oxide Wires|Sreemanta Mitra,Girish C Tewari,Diana Mahalu,Dan Shahar###
(633375, 633375)
 At low field, and far below the superconducting critical temperature,the wires with diameter equal to or less than 100 nm, show negativemagnetoresistance (nMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 100, 'nm', 0]

NbAs
###Chiral anomaly induced negative magnetoresistance in topological Weyl semimetal NbAs|Xiaojun Yang,Yupeng Liu,Zhen Wang,Yi Zheng,Zhu-an Xu###
(633537, 633538)
Chiral anomaly induced negative magnetoresistance in topological Weyl semimetal NbAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Chiral anomaly induced negative magnetoresistance in topological Weyl semimetal NbAs|Xiaojun Yang,Yupeng Liu,Zhen Wang,Yi Zheng,Zhu-an Xu###
(633541, 633541)
 In this paper, we report the intercone transport of Weyl fermions in NbAswith external magnetic field in parallel to electric field, a quantumphenomenon known as the Adler-Bell-Jackiw anomaly.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbAs
###Chiral anomaly induced negative magnetoresistance in topological Weyl semimetal NbAs|Xiaojun Yang,Yupeng Liu,Zhen Wang,Yi Zheng,Zhu-an Xu###
(633566, 633567)
 In this paper, we report the intercone transport of Weyl fermions in NbAswith external magnetic field in parallel to electric field, a quantumphenomenon known as the Adler-Bell-Jackiw anomaly.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbAs
###Chiral anomaly induced negative magnetoresistance in topological Weyl semimetal NbAs|Xiaojun Yang,Yupeng Liu,Zhen Wang,Yi Zheng,Zhu-an Xu###
(633630, 633631)
 Surprisingly, the resultingnegative magnetoresistance (MR) in NbAs shows significant difference from NbP.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbP
###Chiral anomaly induced negative magnetoresistance in topological Weyl semimetal NbAs|Xiaojun Yang,Yupeng Liu,Zhen Wang,Yi Zheng,Zhu-an Xu###
(633641, 633642)
 Surprisingly, the resultingnegative magnetoresistance (MR) in NbAs shows significant difference from NbP.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbP
###Chiral anomaly induced negative magnetoresistance in topological Weyl semimetal NbAs|Xiaojun Yang,Yupeng Liu,Zhen Wang,Yi Zheng,Zhu-an Xu###
(633670, 633671)
The observed low-field positive MR dip, which is missing in NbP at lowtemperatures, indicates that the spin-orbital coupling (SOC) is significantlystronger in NbAs than in the former.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(SOC)
###Chiral anomaly induced negative magnetoresistance in topological Weyl semimetal NbAs|Xiaojun Yang,Yupeng Liu,Zhen Wang,Yi Zheng,Zhu-an Xu###
(633693, 633697)
The observed low-field positive MR dip, which is missing in NbP at lowtemperatures, indicates that the spin-orbital coupling (SOC) is significantlystronger in NbAs than in the former.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbAs
###Chiral anomaly induced negative magnetoresistance in topological Weyl semimetal NbAs|Xiaojun Yang,Yupeng Liu,Zhen Wang,Yi Zheng,Zhu-an Xu###
(633708, 633709)
The observed low-field positive MR dip, which is missing in NbP at lowtemperatures, indicates that the spin-orbital coupling (SOC) is significantlystronger in NbAs than in the former.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SOC
###Chiral anomaly induced negative magnetoresistance in topological Weyl semimetal NbAs|Xiaojun Yang,Yupeng Liu,Zhen Wang,Yi Zheng,Zhu-an Xu###
(633739, 633741)
 The results imply that the contribution ofarsenic to SOC in TaAs and NbAs is not negligible.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TaAs
###Chiral anomaly induced negative magnetoresistance in topological Weyl semimetal NbAs|Xiaojun Yang,Yupeng Liu,Zhen Wang,Yi Zheng,Zhu-an Xu###
(633745, 633746)
 The results imply that the contribution ofarsenic to SOC in TaAs and NbAs is not negligible.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbAs
###Chiral anomaly induced negative magnetoresistance in topological Weyl semimetal NbAs|Xiaojun Yang,Yupeng Liu,Zhen Wang,Yi Zheng,Zhu-an Xu###
(633750, 633751)
 The results imply that the contribution ofarsenic to SOC in TaAs and NbAs is not negligible.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Formation of In-plane Skyrmions in Epitaxial MnSi Thin Films as Revealed by Planar Hall Effect|T. Yokouchi,N. Kanazawa,A. Tsukazaki,Y. Kozuka,A. Kikkawa,Y. Taguchi,M. Kawasaki,M. Ichikawa,F. Kagawa,Y. Tokura###
(633772, 633772)
Formation of In-plane Skyrmions in Epitaxial MnSi Thin Films as Revealed by Planar Hall Effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnSi
###Formation of In-plane Skyrmions in Epitaxial MnSi Thin Films as Revealed by Planar Hall Effect|T. Yokouchi,N. Kanazawa,A. Tsukazaki,Y. Kozuka,A. Kikkawa,Y. Taguchi,M. Kawasaki,M. Ichikawa,F. Kagawa,Y. Tokura###
(633782, 633783)
Formation of In-plane Skyrmions in Epitaxial MnSi Thin Films as Revealed by Planar Hall Effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnSi
###Formation of In-plane Skyrmions in Epitaxial MnSi Thin Films as Revealed by Planar Hall Effect|T. Yokouchi,N. Kanazawa,A. Tsukazaki,Y. Kozuka,A. Kikkawa,Y. Taguchi,M. Kawasaki,M. Ichikawa,F. Kagawa,Y. Tokura###
(633833, 633834)
 We investigate skyrmion formation in both a single crystalline bulk andepitaxial thin films of MnSi by measurements of planar Hall effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnSi
###Formation of In-plane Skyrmions in Epitaxial MnSi Thin Films as Revealed by Planar Hall Effect|T. Yokouchi,N. Kanazawa,A. Tsukazaki,Y. Kozuka,A. Kikkawa,Y. Taguchi,M. Kawasaki,M. Ichikawa,F. Kagawa,Y. Tokura###
(634029, 634030)
 Uniaxial magneticanisotropy plays an important role in stabilizing the in-plane skyrmions in theMnSi thin film.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrVO3/LaVO3
###Kondo effect goes anisotropic in vanadate oxide superlattices|Hélène Rotella,Alain Pautrat,Olivier Copie,Philippe Boullay,Adrian David,Bernard Mercey,Magali Morales,Wilfrid Prellier###
(634335, 634343)
 We study the transport properties in SrVO3/LaVO3 (SVO/L<missing VAR>VO) superlatticesdeposited on SrTiO3 (ST<missing VAR>O) substrates.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[71.0, 2, 'D', 1]

SVO
###Kondo effect goes anisotropic in vanadate oxide superlattices|Hélène Rotella,Alain Pautrat,Olivier Copie,Philippe Boullay,Adrian David,Bernard Mercey,Magali Morales,Wilfrid Prellier###
(634346, 634348)
 We study the transport properties in SrVO3/LaVO3 (SVO/L<missing VAR>VO) superlatticesdeposited on SrTiO3 (ST<missing VAR>O) substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 2, 'D', 1]

O
###Kondo effect goes anisotropic in vanadate oxide superlattices|Hélène Rotella,Alain Pautrat,Olivier Copie,Philippe Boullay,Adrian David,Bernard Mercey,Magali Morales,Wilfrid Prellier###
(634352, 634352)
 We study the transport properties in SrVO3/LaVO3 (SVO/L<missing VAR>VO) superlatticesdeposited on SrTiO3 (ST<missing VAR>O) substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 2, 'D', 1]

SrTiO3
###Kondo effect goes anisotropic in vanadate oxide superlattices|Hélène Rotella,Alain Pautrat,Olivier Copie,Philippe Boullay,Adrian David,Bernard Mercey,Magali Morales,Wilfrid Prellier###
(634362, 634365)
 We study the transport properties in SrVO3/LaVO3 (SVO/L<missing VAR>VO) superlatticesdeposited on SrTiO3 (ST<missing VAR>O) substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 2, 'D', 1]

S
###Kondo effect goes anisotropic in vanadate oxide superlattices|Hélène Rotella,Alain Pautrat,Olivier Copie,Philippe Boullay,Adrian David,Bernard Mercey,Magali Morales,Wilfrid Prellier###
(634368, 634368)
 We study the transport properties in SrVO3/LaVO3 (SVO/L<missing VAR>VO) superlatticesdeposited on SrTiO3 (ST<missing VAR>O) substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 2, 'D', 1]

O
###Kondo effect goes anisotropic in vanadate oxide superlattices|Hélène Rotella,Alain Pautrat,Olivier Copie,Philippe Boullay,Adrian David,Bernard Mercey,Magali Morales,Wilfrid Prellier###
(634370, 634370)
 We study the transport properties in SrVO3/LaVO3 (SVO/L<missing VAR>VO) superlatticesdeposited on SrTiO3 (ST<missing VAR>O) substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 2, 'D', 1]

VO
###Kondo effect goes anisotropic in vanadate oxide superlattices|Hélène Rotella,Alain Pautrat,Olivier Copie,Philippe Boullay,Adrian David,Bernard Mercey,Magali Morales,Wilfrid Prellier###
(634398, 634399)
 We show that the electronic conductionoccurs in the metallic L<missing VAR>VO layers with a galvanomagnetism typical of a 2D Fermisurface.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 2, 'D', 0]

In
###Kondo effect goes anisotropic in vanadate oxide superlattices|Hélène Rotella,Alain Pautrat,Olivier Copie,Philippe Boullay,Adrian David,Bernard Mercey,Magali Morales,Wilfrid Prellier###
(634422, 634422)
 In addition, a Kondo-like component appears in both the thermalvariation of resistivity and the magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 2, 'D', 1]

S
###Kondo effect goes anisotropic in vanadate oxide superlattices|Hélène Rotella,Alain Pautrat,Olivier Copie,Philippe Boullay,Adrian David,Bernard Mercey,Magali Morales,Wilfrid Prellier###
(634473, 634473)
 Surprisingly, in thissystem where the ST<missing VAR>O interface does not contribute to the measured conduction,the Kondo correction is strongly anisotropic.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 2, 'D', 2]

O
###Kondo effect goes anisotropic in vanadate oxide superlattices|Hélène Rotella,Alain Pautrat,Olivier Copie,Philippe Boullay,Adrian David,Bernard Mercey,Magali Morales,Wilfrid Prellier###
(634475, 634475)
 Surprisingly, in thissystem where the ST<missing VAR>O interface does not contribute to the measured conduction,the Kondo correction is strongly anisotropic.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 2, 'D', 2]

Co2FeSi
###Spin injection into multilayer graphene from highly spin-polarized Co2FeSi Heusler alloy|Takehiro Yamaguchi,Rai Moriya,Yoichiro Oki,Shinya Yamada,Satoru Masubuchi,Kohei Hamada,Tomoki Machida###
(634593, 634596)
Spin injection into multilayer graphene from highly spin-polarized Co2FeSi Heusler alloy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0.25,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[208.0, 430, 'ohm', 5]

Co2FeSi
###Spin injection into multilayer graphene from highly spin-polarized Co2FeSi Heusler alloy|Takehiro Yamaguchi,Rai Moriya,Yoichiro Oki,Shinya Yamada,Satoru Masubuchi,Kohei Hamada,Tomoki Machida###
(634648, 634651)
 We demonstrate electrical spin injection into multilayer graphene (MLG) in alateral spin valve device from a highly spin-polarized Co2FeSi (CFS) Hueslerelectrode.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0.25,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 430, 'ohm', 4]

(CFS)
###Spin injection into multilayer graphene from highly spin-polarized Co2FeSi Heusler alloy|Takehiro Yamaguchi,Rai Moriya,Yoichiro Oki,Shinya Yamada,Satoru Masubuchi,Kohei Hamada,Tomoki Machida###
(634653, 634657)
 We demonstrate electrical spin injection into multilayer graphene (MLG) in alateral spin valve device from a highly spin-polarized Co2FeSi (CFS) Hueslerelectrode.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 430, 'ohm', 4]

CFS
###Spin injection into multilayer graphene from highly spin-polarized Co2FeSi Heusler alloy|Takehiro Yamaguchi,Rai Moriya,Yoichiro Oki,Shinya Yamada,Satoru Masubuchi,Kohei Hamada,Tomoki Machida###
(634683, 634685)
 Exfoliated MLG was transferred onto pre-patterned epitaxial CFSwires grown on an Si(111) substrate by a polymer-based transfer method.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 430, 'ohm', 3]

CFS
###Spin injection into multilayer graphene from highly spin-polarized Co2FeSi Heusler alloy|Takehiro Yamaguchi,Rai Moriya,Yoichiro Oki,Shinya Yamada,Satoru Masubuchi,Kohei Hamada,Tomoki Machida###
(634735, 634737)
 Thismethod enabled us to fabricate multiple single-crystal CFS electrodes incontact with MLG.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 430, 'ohm', 2]

CFS
###Spin injection into multilayer graphene from highly spin-polarized Co2FeSi Heusler alloy|Takehiro Yamaguchi,Rai Moriya,Yoichiro Oki,Shinya Yamada,Satoru Masubuchi,Kohei Hamada,Tomoki Machida###
(634761, 634763)
 Electrical spin injection from CFS to MLG was detectedthrough non-local magnetoresistance (MR) measurement.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 430, 'ohm', 1]

As
###Low temperature Hall effect in bismuth chalcogenides thin films|A. Yu. Kuntsevich,A. A. Gabdullin,V. A. Prudkogliad,Yu. G. Selivanov,E. G. Chizhevskii,V. M. Pudalov###
(634891, 634891)
 As arule, at low temperatures thin films of these materials demonstrate positivemagnetoresistance due to weak antilocalization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 3, 'D', 1]

YSb
###Distinct Electronic Structure for the Extreme Magnetoresistance in YSb|Junfeng He,Chaofan Zhang,Nirmal J. Ghimire,Tian Liang,Chunjing Jia,Juan Jiang,Shujie Tang,Sudi Chen,Yu He,S. -K. Mo,C. C. Hwang,M. Hashimoto,D. H. Lu,B. Moritz,T. P. Devereaux,Y. L. Chen,J. F. Mitchell,Z. -X. Shen###
(635135, 635136)
Distinct Electronic Structure for the Extreme Magnetoresistance in YSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YSb
###Distinct Electronic Structure for the Extreme Magnetoresistance in YSb|Junfeng He,Chaofan Zhang,Nirmal J. Ghimire,Tian Liang,Chunjing Jia,Juan Jiang,Shujie Tang,Sudi Chen,Yu He,S. -K. Mo,C. C. Hwang,M. Hashimoto,D. H. Lu,B. Moritz,T. P. Devereaux,Y. L. Chen,J. F. Mitchell,Z. -X. Shen###
(635241, 635242)
 Here, by investigating the electronic structure ofa XMR material, YSb, we present spectroscopic evidence for a special case whichlacks topological protection and perfect electron-hole compensation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YSb
###Distinct Electronic Structure for the Extreme Magnetoresistance in YSb|Junfeng He,Chaofan Zhang,Nirmal J. Ghimire,Tian Liang,Chunjing Jia,Juan Jiang,Shujie Tang,Sudi Chen,Yu He,S. -K. Mo,C. C. Hwang,M. Hashimoto,D. H. Lu,B. Moritz,T. P. Devereaux,Y. L. Chen,J. F. Mitchell,Z. -X. Shen###
(635340, 635341)
 Furtherinvestigations reveal that a cooperative action of a substantial differencebetween electron and hole mobility and a moderate carrier compensation mightcontribute to the XMR in YSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Y3Fe5O12
###Electrical Detection of Spin Backflow from an Antiferromagnetic Insulator/Y3Fe5O12 Interface|Weiwei Lin,C. L. Chien###
(635607, 635612)
Electrical Detection of Spin Backflow from an Antiferromagnetic Insulator/Y3Fe5O12 Interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Electrical Detection of Spin Backflow from an Antiferromagnetic Insulator/Y3Fe5O12 Interface|Weiwei Lin,C. L. Chien###
(635624, 635624)
 Spin Hall magnetoresistance (SMR) has been observed in Pt/NiO/Y3Fe5O12 (YIG)heterostructures with characteristics very different from those in Pt/YIG<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt/NiO/Y3Fe5O12
###Electrical Detection of Spin Backflow from an Antiferromagnetic Insulator/Y3Fe5O12 Interface|Weiwei Lin,C. L. Chien###
(635637, 635647)
 Spin Hall magnetoresistance (SMR) has been observed in Pt/NiO/Y3Fe5O12 (YIG)heterostructures with characteristics very different from those in Pt/YIG<missing VAR>.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

YI
###Electrical Detection of Spin Backflow from an Antiferromagnetic Insulator/Y3Fe5O12 Interface|Weiwei Lin,C. L. Chien###
(635650, 635651)
 Spin Hall magnetoresistance (SMR) has been observed in Pt/NiO/Y3Fe5O12 (YIG)heterostructures with characteristics very different from those in Pt/YIG<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt/YI
###Electrical Detection of Spin Backflow from an Antiferromagnetic Insulator/Y3Fe5O12 Interface|Weiwei Lin,C. L. Chien###
(635672, 635675)
 Spin Hall magnetoresistance (SMR) has been observed in Pt/NiO/Y3Fe5O12 (YIG)heterostructures with characteristics very different from those in Pt/YIG<missing VAR>.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

S
###Electrical Detection of Spin Backflow from an Antiferromagnetic Insulator/Y3Fe5O12 Interface|Weiwei Lin,C. L. Chien###
(635688, 635688)
 Weshow that the SMR in Pt/NiO/YIG<missing VAR> strongly correlates with spin conductance, bothsharing very strong temperature dependence due to antiferromagnetic magnons andspin fluctuation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt/NiO/YI
###Electrical Detection of Spin Backflow from an Antiferromagnetic Insulator/Y3Fe5O12 Interface|Weiwei Lin,C. L. Chien###
(635694, 635700)
 Weshow that the SMR in Pt/NiO/YIG<missing VAR> strongly correlates with spin conductance, bothsharing very strong temperature dependence due to antiferromagnetic magnons andspin fluctuation.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Pt
###Electrical Detection of Spin Backflow from an Antiferromagnetic Insulator/Y3Fe5O12 Interface|Weiwei Lin,C. L. Chien###
(635770, 635770)
 This phenomenon indicates that spin current generated by spinHall effect in the Pt transmits through the insulating NiO and is reflectedfrom the NiO/YIG<missing VAR> interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiO
###Electrical Detection of Spin Backflow from an Antiferromagnetic Insulator/Y3Fe5O12 Interface|Weiwei Lin,C. L. Chien###
(635780, 635781)
 This phenomenon indicates that spin current generated by spinHall effect in the Pt transmits through the insulating NiO and is reflectedfrom the NiO/YIG<missing VAR> interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiO/YI
###Electrical Detection of Spin Backflow from an Antiferromagnetic Insulator/Y3Fe5O12 Interface|Weiwei Lin,C. L. Chien###
(635794, 635798)
 This phenomenon indicates that spin current generated by spinHall effect in the Pt transmits through the insulating NiO and is reflectedfrom the NiO/YIG<missing VAR> interface.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

S
###Electrical Detection of Spin Backflow from an Antiferromagnetic Insulator/Y3Fe5O12 Interface|Weiwei Lin,C. L. Chien###
(635806, 635806)
 Inverted SMR has been observed below a temperaturewhich increases with the NiO thickness, suggesting spin-flip reflection fromthe antiferromagnetic NiO exchange coupled with the YIG<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiO
###Electrical Detection of Spin Backflow from an Antiferromagnetic Insulator/Y3Fe5O12 Interface|Weiwei Lin,C. L. Chien###
(635831, 635832)
 Inverted SMR has been observed below a temperaturewhich increases with the NiO thickness, suggesting spin-flip reflection fromthe antiferromagnetic NiO exchange coupled with the YIG<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiO
###Electrical Detection of Spin Backflow from an Antiferromagnetic Insulator/Y3Fe5O12 Interface|Weiwei Lin,C. L. Chien###
(635852, 635853)
 Inverted SMR has been observed below a temperaturewhich increases with the NiO thickness, suggesting spin-flip reflection fromthe antiferromagnetic NiO exchange coupled with the YIG<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YI
###Electrical Detection of Spin Backflow from an Antiferromagnetic Insulator/Y3Fe5O12 Interface|Weiwei Lin,C. L. Chien###
(635863, 635864)
 Inverted SMR has been observed below a temperaturewhich increases with the NiO thickness, suggesting spin-flip reflection fromthe antiferromagnetic NiO exchange coupled with the YIG<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SmB6
###Signature of surface state coupling in thin films of the topological Kondo insulator SmB$_6$ from anisotropic magnetoresistance|M. Shaviv Petrushevsky,P. K. Rout,G. Levi,A. Kohn,Y. Dagan###
(635902, 635904)
Signature of surface state coupling in thin films of the topological Kondo insulator SmB6 from anisotropic magnetoresistance.
Featurization terminated normally.
0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 30, 'nm', 3]

SmB6
###Signature of surface state coupling in thin films of the topological Kondo insulator SmB$_6$ from anisotropic magnetoresistance|M. Shaviv Petrushevsky,P. K. Rout,G. Levi,A. Kohn,Y. Dagan###
(635944, 635946)
 The temperature and thickness dependencies of the in-plane anisotropicmagnetoresistance (AMR) of SmB6 thin films are reported.
Featurization terminated normally.
0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 30, 'nm', 2]

Fe/MgO/Fe
###Impurity-limited quantum transport variability in magnetic tunnel junctions|Jianing Zhuang,Yin Wang,Yan Zhou,Jian Wang,Hong Guo###
(636179, 636184)
 We report an extensive first-principles investigation of impurity-induceddevice-to-device variability of spin-polarized quantum tunneling throughFe/MgO/Fe magnetic tunnel junctions (MTJ).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

In
###Impurity-limited quantum transport variability in magnetic tunnel junctions|Jianing Zhuang,Yin Wang,Yan Zhou,Jian Wang,Hong Guo###
(636199, 636199)
 In particular, we calculated thetunnel magnetoresistance ratio (TMR) and the average values and variances ofthe currents and spin transfer torque (STT) of an interfacially doped Fe/MgO/FeMTJ.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Impurity-limited quantum transport variability in magnetic tunnel junctions|Jianing Zhuang,Yin Wang,Yan Zhou,Jian Wang,Hong Guo###
(636251, 636251)
 In particular, we calculated thetunnel magnetoresistance ratio (TMR) and the average values and variances ofthe currents and spin transfer torque (STT) of an interfacially doped Fe/MgO/FeMTJ.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/MgO/Fe
###Impurity-limited quantum transport variability in magnetic tunnel junctions|Jianing Zhuang,Yin Wang,Yan Zhou,Jian Wang,Hong Guo###
(636264, 636269)
 In particular, we calculated thetunnel magnetoresistance ratio (TMR) and the average values and variances ofthe currents and spin transfer torque (STT) of an interfacially doped Fe/MgO/FeMTJ.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

N
###Impurity-limited quantum transport variability in magnetic tunnel junctions|Jianing Zhuang,Yin Wang,Yan Zhou,Jian Wang,Hong Guo###
(636286, 636286)
 Further, we predicted that N-doped MgO can improve the performance of adoped Fe/MgO/Fe MTJ.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Impurity-limited quantum transport variability in magnetic tunnel junctions|Jianing Zhuang,Yin Wang,Yan Zhou,Jian Wang,Hong Guo###
(636290, 636291)
 Further, we predicted that N-doped MgO can improve the performance of adoped Fe/MgO/Fe MTJ.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/MgO/Fe
###Impurity-limited quantum transport variability in magnetic tunnel junctions|Jianing Zhuang,Yin Wang,Yan Zhou,Jian Wang,Hong Guo###
(636308, 636313)
 Further, we predicted that N-doped MgO can improve the performance of adoped Fe/MgO/Fe MTJ.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

S
###Impurity-limited quantum transport variability in magnetic tunnel junctions|Jianing Zhuang,Yin Wang,Yan Zhou,Jian Wang,Hong Guo###
(636347, 636347)
 Our first-principles calculations of the fluctuations ofthe on/off currents and STT provide vital information for future predictions ofthe long-term reliability of spintronic devices, which is imperative forhigh-volume production.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(BP)
###Gate-tunable strong-weak localization transition in few-layer black phosphorus|Gen Long,Shuigang Xu,Xiangbin Cai,Zefei Wu,Tianyi Han,Jiangxiazi Lin,Yuanwei Wang,Liheng An,Yuan Cai,Xinran Wang,Ning Wang###
(636436, 636439)
 Atomically thin black phosphorus (BP) field-effect transistors showstrong-weak localization transition which is tunable through gate voltages.
Featurization successful!
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Gate-tunable strong-weak localization transition in few-layer black phosphorus|Gen Long,Shuigang Xu,Xiangbin Cai,Zefei Wu,Tianyi Han,Jiangxiazi Lin,Yuanwei Wang,Liheng An,Yuan Cai,Xinran Wang,Ning Wang###
(636532, 636532)
 In the high-carrierconcentration regime, a negative magnetoresistance signals the weaklocalization effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BP
###Gate-tunable strong-weak localization transition in few-layer black phosphorus|Gen Long,Shuigang Xu,Xiangbin Cai,Zefei Wu,Tianyi Han,Jiangxiazi Lin,Yuanwei Wang,Liheng An,Yuan Cai,Xinran Wang,Ning Wang###
(636612, 636613)
 The extracted phase coherence length is power-lawtemperature dependent (sim T<missing VAR>-0.48pm0.03) and demonstrateselectron-electron interactions in few-layer BP.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BP
###Gate-tunable strong-weak localization transition in few-layer black phosphorus|Gen Long,Shuigang Xu,Xiangbin Cai,Zefei Wu,Tianyi Han,Jiangxiazi Lin,Yuanwei Wang,Liheng An,Yuan Cai,Xinran Wang,Ning Wang###
(636675, 636676)
 The competition between theStrong localization length and phase coherence length is proposed and discussedbased on the observed gate tunable strong-weak localization transition infew-layer BP.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeRh/BaTiO3
###Full Electroresistance Modulation in a Mixed-Phase Metallic Alloy|Z. Q. Liu,L. Li,Z. Gai,J. D. Clarkson,S. L. Hsu,A. T. Wong,L. S. Fan,M. -W. Lin,C. M. Rouleau,T. Z. Ward,H. N. Lee,A. S. Sefat,H. M. Christen,R. Ramesh###
(636790, 636796)
 It is achieved by a small electric field of 2 kV/cm viapiezoelectric strain-mediated magnetoelectric coupling and the resultingmagnetic phase transition in epitaxial FeRh/BaTiO3 heterostructures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[75.0, 22, '%', 1],[34.0, 2, 'kV', 0]

FeRh
###Full Electroresistance Modulation in a Mixed-Phase Metallic Alloy|Z. Q. Liu,L. Li,Z. Gai,J. D. Clarkson,S. L. Hsu,A. T. Wong,L. S. Fan,M. -W. Lin,C. M. Rouleau,T. Z. Ward,H. N. Lee,A. S. Sefat,H. M. Christen,R. Ramesh###
(636837, 636838)
 This workpresents detailed experimental evidence for an isothermal magnetic phasetransition driven by tetragonality modulation in FeRh thin films, which is incontrast to the large volume expansion in the conventional temperature-drivenmagnetic phase transition in FeRh.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 22, '%', 2],[81.0, 2, 'kV', 1]

FeRh
###Full Electroresistance Modulation in a Mixed-Phase Metallic Alloy|Z. Q. Liu,L. Li,Z. Gai,J. D. Clarkson,S. L. Hsu,A. T. Wong,L. S. Fan,M. -W. Lin,C. M. Rouleau,T. Z. Ward,H. N. Lee,A. S. Sefat,H. M. Christen,R. Ramesh###
(636883, 636884)
 This workpresents detailed experimental evidence for an isothermal magnetic phasetransition driven by tetragonality modulation in FeRh thin films, which is incontrast to the large volume expansion in the conventional temperature-drivenmagnetic phase transition in FeRh.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[168.0, 22, '%', 2],[127.0, 2, 'kV', 1]

FeRh
###Full Electroresistance Modulation in a Mixed-Phase Metallic Alloy|Z. Q. Liu,L. Li,Z. Gai,J. D. Clarkson,S. L. Hsu,A. T. Wong,L. S. Fan,M. -W. Lin,C. M. Rouleau,T. Z. Ward,H. N. Lee,A. S. Sefat,H. M. Christen,R. Ramesh###
(636907, 636908)
 Moreover, all the experimental results inthis work illustrate FeRh as a mixed-phase model system well similar tophase-separated colossal magnetoresistance systems with phase instabilitytherein.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[192.0, 22, '%', 3],[151.0, 2, 'kV', 2]

BaZnBi2
###Magneto-transport and Electronic Structures of BaZnBi$_2$|Yi-Yan Wang,Peng-Jie Guo,Qiao-He Yu,Sheng Xu,Kai Liu,Tian-Long Xia###
(636969, 636972)
Magneto-transport and Electronic Structures of BaZnBi2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BaZnBi2
###Magneto-transport and Electronic Structures of BaZnBi$_2$|Yi-Yan Wang,Peng-Jie Guo,Qiao-He Yu,Sheng Xu,Kai Liu,Tian-Long Xia###
(636996, 636999)
 We report the magneto-transport properties and electronic structures ofBaZnBi2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BaZnBi2
###Magneto-transport and Electronic Structures of BaZnBi$_2$|Yi-Yan Wang,Peng-Jie Guo,Qiao-He Yu,Sheng Xu,Kai Liu,Tian-Long Xia###
(637002, 637005)
 BaZnBi2 is a quasi-two-dimensional (2D) material with metallicbehavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Magneto-transport and Electronic Structures of BaZnBi$_2$|Yi-Yan Wang,Peng-Jie Guo,Qiao-He Yu,Sheng Xu,Kai Liu,Tian-Long Xia###
(637066, 637066)
 The transverse magnetoresistance (MR) depends on magnetic fieldlinearly and exhibits Shubnikov-de Haas (SdH) oscillation at low temperatureand high field.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Magneto-transport and Electronic Structures of BaZnBi$_2$|Yi-Yan Wang,Peng-Jie Guo,Qiao-He Yu,Sheng Xu,Kai Liu,Tian-Long Xia###
(637172, 637172)
 Combining with the trivial Berry phase extracted from SdH oscillation,BaZnBi2 is suggested to be a topologically trivial semimetal.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BaZnBi2
###Magneto-transport and Electronic Structures of BaZnBi$_2$|Yi-Yan Wang,Peng-Jie Guo,Qiao-He Yu,Sheng Xu,Kai Liu,Tian-Long Xia###
(637178, 637181)
 Combining with the trivial Berry phase extracted from SdH oscillation,BaZnBi2 is suggested to be a topologically trivial semimetal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Magneto-transport and Electronic Structures of BaZnBi$_2$|Yi-Yan Wang,Peng-Jie Guo,Qiao-He Yu,Sheng Xu,Kai Liu,Tian-Long Xia###
(637214, 637214)
 Nearlycompensated electron-like Fermi surfaces (FSs) and hole-like FSs coexist inBaZnBi2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Magneto-transport and Electronic Structures of BaZnBi$_2$|Yi-Yan Wang,Peng-Jie Guo,Qiao-He Yu,Sheng Xu,Kai Liu,Tian-Long Xia###
(637224, 637224)
 Nearlycompensated electron-like Fermi surfaces (FSs) and hole-like FSs coexist inBaZnBi2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BaZnBi2
###Magneto-transport and Electronic Structures of BaZnBi$_2$|Yi-Yan Wang,Peng-Jie Guo,Qiao-He Yu,Sheng Xu,Kai Liu,Tian-Long Xia###
(637232, 637235)
 Nearlycompensated electron-like Fermi surfaces (FSs) and hole-like FSs coexist inBaZnBi2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

InSb
###Anisotropic thermal magnetoresistance for an active control of radiative heat transfer|R. M. Abraham Ekeroth,Philippe Ben-Abdallah,Juan Carlos Cuevas,Antonio García-Martín###
(637368, 637369)
 We illustrate this effect with the case of two InSbspherical particles where we find that the ATMR amplitude can reach values ofup to 800% for a magnetic field of 5 T, which is many orders of magnitudelarger than its spintronic analogue in electronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 800, '%', 0],[49.0, 5, 'T', 0]

In
###Transversal magnetotransport in Weyl semimetals: Exact numerical approach|Jan Behrends,Flore K. Kunst,Björn Sbierski###
(637839, 637839)
 In this work,we present a theoretical scattering matrix approach to transversalmagnetotransport in a Weyl node.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Transversal magnetotransport in Weyl semimetals: Exact numerical approach|Jan Behrends,Flore K. Kunst,Björn Sbierski###
(637952, 637952)
 In particular, we study the case of clean and stronglydisordered samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi1-x
###Topological Phase Transition-Induced Tri-Axial Vector Magnetoresistance in (Bi1-xInx)2Se3 Nanodevices|Minhao Zhang,Huaiqiang Wang,Kejun Mu,Pengdong Wang,Wei Niu,Shuai Zhang,Guiling Xiao,Yequan Chen,Tong Tong,Dongzhi Fu,Xuefeng Wang,Haijun Zhang,Fengqi Song,Feng Miao,Zhe Sun,Zhengcai Xia,Xinran Wang,Yongbing Xu,Baigeng Wang,Dingyu Xing,Rong Zhang###
(638006, 638009)
Topological Phase Transition-Induced Tri-Axial Vector Magnetoresistance in (Bi1-xInx)2Se3 Nanodevices.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[135.0, -3, '%', 3],[139.0, -1, '%', 3],[144.0, 225, '%', 3],[150.0, 2, 'K', 3]

Se3
###Topological Phase Transition-Induced Tri-Axial Vector Magnetoresistance in (Bi1-xInx)2Se3 Nanodevices|Minhao Zhang,Huaiqiang Wang,Kejun Mu,Pengdong Wang,Wei Niu,Shuai Zhang,Guiling Xiao,Yequan Chen,Tong Tong,Dongzhi Fu,Xuefeng Wang,Haijun Zhang,Fengqi Song,Feng Miao,Zhe Sun,Zhengcai Xia,Xinran Wang,Yongbing Xu,Baigeng Wang,Dingyu Xing,Rong Zhang###
(638013, 638014)
Topological Phase Transition-Induced Tri-Axial Vector Magnetoresistance in (Bi1-xInx)2Se3 Nanodevices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, -3, '%', 3],[134.0, -1, '%', 3],[139.0, 225, '%', 3],[145.0, 2, 'K', 3]

Bi1-x
###Topological Phase Transition-Induced Tri-Axial Vector Magnetoresistance in (Bi1-xInx)2Se3 Nanodevices|Minhao Zhang,Huaiqiang Wang,Kejun Mu,Pengdong Wang,Wei Niu,Shuai Zhang,Guiling Xiao,Yequan Chen,Tong Tong,Dongzhi Fu,Xuefeng Wang,Haijun Zhang,Fengqi Song,Feng Miao,Zhe Sun,Zhengcai Xia,Xinran Wang,Yongbing Xu,Baigeng Wang,Dingyu Xing,Rong Zhang###
(638050, 638053)
 We report the study of a tri-axial vector magnetoresistance (MR) innonmagnetic (Bi1-xInx)2Se3 nanodevices at the composition of x<missing VAR>  0.08.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[91.0, -3, '%', 2],[95.0, -1, '%', 2],[100.0, 225, '%', 2],[106.0, 2, 'K', 2]

Se3
###Topological Phase Transition-Induced Tri-Axial Vector Magnetoresistance in (Bi1-xInx)2Se3 Nanodevices|Minhao Zhang,Huaiqiang Wang,Kejun Mu,Pengdong Wang,Wei Niu,Shuai Zhang,Guiling Xiao,Yequan Chen,Tong Tong,Dongzhi Fu,Xuefeng Wang,Haijun Zhang,Fengqi Song,Feng Miao,Zhe Sun,Zhengcai Xia,Xinran Wang,Yongbing Xu,Baigeng Wang,Dingyu Xing,Rong Zhang###
(638057, 638058)
 We report the study of a tri-axial vector magnetoresistance (MR) innonmagnetic (Bi1-xInx)2Se3 nanodevices at the composition of x<missing VAR>  0.08.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, -3, '%', 2],[90.0, -1, '%', 2],[95.0, 225, '%', 2],[101.0, 2, 'K', 2]

II
###Heat capacity evidence for conventional superconductivity in the Type-II Dirac semi-metal PdTe$_2$|Amit,Yogesh Singh###
(638294, 638295)
Heat capacity evidence for conventional superconductivity in the Type-II Dirac semi-metal PdTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PdTe2
###Heat capacity evidence for conventional superconductivity in the Type-II Dirac semi-metal PdTe$_2$|Amit,Yogesh Singh###
(638303, 638305)
Heat capacity evidence for conventional superconductivity in the Type-II Dirac semi-metal PdTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Heat capacity evidence for conventional superconductivity in the Type-II Dirac semi-metal PdTe$_2$|Amit,Yogesh Singh###
(638352, 638353)
 We use electrical transport, magnetoresistance, and heat capacitymeasurements on high quality single crystals of the recently discoveredsuperconducting Type-II Dirac semi-metal PdTe2, to probe the nature of its<missing VAR>superconducting phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PdTe2
###Heat capacity evidence for conventional superconductivity in the Type-II Dirac semi-metal PdTe$_2$|Amit,Yogesh Singh###
(638361, 638363)
 We use electrical transport, magnetoresistance, and heat capacitymeasurements on high quality single crystals of the recently discoveredsuperconducting Type-II Dirac semi-metal PdTe2, to probe the nature of its<missing VAR>superconducting phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Heat capacity evidence for conventional superconductivity in the Type-II Dirac semi-metal PdTe$_2$|Amit,Yogesh Singh###
(638436, 638436)
 The magnitude of the electronic heat capacity anomaly atTc, the low temperature exponential T<missing VAR> dependence of the heat capacity, anda conventional H - T<missing VAR> phase diagram establish that the superconductivity inPdTe2 is conventional in nature despite the presence of a topologicallynon-trivial Fermi surface band which contributes to the electrical conduction.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PdTe2
###Heat capacity evidence for conventional superconductivity in the Type-II Dirac semi-metal PdTe$_2$|Amit,Yogesh Singh###
(638457, 638459)
 The magnitude of the electronic heat capacity anomaly atTc, the low temperature exponential T<missing VAR> dependence of the heat capacity, anda conventional H - T<missing VAR> phase diagram establish that the superconductivity inPdTe2 is conventional in nature despite the presence of a topologicallynon-trivial Fermi surface band which contributes to the electrical conduction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Planar Hall effect in type-II Weyl semimetal WTe2|Y. J. Wang,J. X. Gong,D. D. Liang,M. Ge,J. R. Wang,W. K. Zhu,C. J. Zhang###
(638523, 638524)
Planar Hall effect in type-II Weyl semimetal WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Planar Hall effect in type-II Weyl semimetal WTe2|Y. J. Wang,J. X. Gong,D. D. Liang,M. Ge,J. R. Wang,W. K. Zhu,C. J. Zhang###
(638530, 638532)
Planar Hall effect in type-II Weyl semimetal WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Planar Hall effect in type-II Weyl semimetal WTe2|Y. J. Wang,J. X. Gong,D. D. Liang,M. Ge,J. R. Wang,W. K. Zhu,C. J. Zhang###
(638598, 638599)
 We report the first experimentalobservation of giant planar Hall effect in type-II Weyl semimetal WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Planar Hall effect in type-II Weyl semimetal WTe2|Y. J. Wang,J. X. Gong,D. D. Liang,M. Ge,J. R. Wang,W. K. Zhu,C. J. Zhang###
(638605, 638607)
 We report the first experimentalobservation of giant planar Hall effect in type-II Weyl semimetal WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Planar Hall effect in type-II Weyl semimetal WTe2|Y. J. Wang,J. X. Gong,D. D. Liang,M. Ge,J. R. Wang,W. K. Zhu,C. J. Zhang###
(638700, 638701)
Unlike the somewhat elusive negative magnetoresistance, the planar Hall effectis robust and easy to be detected in type-II Weyl semimetal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Planar Hall effect in type-II Weyl semimetal WTe2|Y. J. Wang,J. X. Gong,D. D. Liang,M. Ge,J. R. Wang,W. K. Zhu,C. J. Zhang###
(638759, 638760)
 This work revealsthat the planar Hall effect is an effective transport probe to determine thetopological nature of topological semimetals, especially in type-II Weylsemimetals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaAlO3/SrTiO3
###Shubnikov-de Haas-like Quantum Oscillations in Artificial One-Dimensional LaAlO3/SrTiO3 Electron Channels|Guanglei Cheng,Anil Annadi,Shicheng Lu,Hyungwoo Lee,Jung-Woo Lee,Mengchen Huang,Chang-Beom Eom,Patrick Irvin,Jeremy Levy###
(638796, 638804)
Shubnikov-de Haas-like Quantum Oscillations in Artificial One-Dimensional LaAlO3/SrTiO3 Electron Channels.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[183.0, 2, 'D', 4]

LaAlO3/SrTiO3
###Shubnikov-de Haas-like Quantum Oscillations in Artificial One-Dimensional LaAlO3/SrTiO3 Electron Channels|Guanglei Cheng,Anil Annadi,Shicheng Lu,Hyungwoo Lee,Jung-Woo Lee,Mengchen Huang,Chang-Beom Eom,Patrick Irvin,Jeremy Levy###
(638823, 638831)
 The widely reported magnetoresistance oscillations in LaAlO3/SrTiO3heterostructures have invariably been attributed to the Shubnikov-de Haas (SdH)effect, despite a pronounced inconsistency with low-field Hall resistancemeasurements.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[156.0, 2, 'D', 3]

H
###Shubnikov-de Haas-like Quantum Oscillations in Artificial One-Dimensional LaAlO3/SrTiO3 Electron Channels|Guanglei Cheng,Anil Annadi,Shicheng Lu,Hyungwoo Lee,Jung-Woo Lee,Mengchen Huang,Chang-Beom Eom,Patrick Irvin,Jeremy Levy###
(638856, 638856)
 The widely reported magnetoresistance oscillations in LaAlO3/SrTiO3heterostructures have invariably been attributed to the Shubnikov-de Haas (SdH)effect, despite a pronounced inconsistency with low-field Hall resistancemeasurements.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 2, 'D', 3]

H
###Shubnikov-de Haas-like Quantum Oscillations in Artificial One-Dimensional LaAlO3/SrTiO3 Electron Channels|Guanglei Cheng,Anil Annadi,Shicheng Lu,Hyungwoo Lee,Jung-Woo Lee,Mengchen Huang,Chang-Beom Eom,Patrick Irvin,Jeremy Levy###
(638892, 638892)
 Here we report SdH-like resistance oscillations in quasi-1D<missing VAR>electron waveguides created at the LaAlO3/SrTiO3 interface by conductive atomicforce microscopy lithography.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 2, 'D', 2]

LaAlO3/SrTiO3
###Shubnikov-de Haas-like Quantum Oscillations in Artificial One-Dimensional LaAlO3/SrTiO3 Electron Channels|Guanglei Cheng,Anil Annadi,Shicheng Lu,Hyungwoo Lee,Jung-Woo Lee,Mengchen Huang,Chang-Beom Eom,Patrick Irvin,Jeremy Levy###
(638918, 638926)
 Here we report SdH-like resistance oscillations in quasi-1D<missing VAR>electron waveguides created at the LaAlO3/SrTiO3 interface by conductive atomicforce microscopy lithography.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[61.0, 2, 'D', 2]

H
###Shubnikov-de Haas-like Quantum Oscillations in Artificial One-Dimensional LaAlO3/SrTiO3 Electron Channels|Guanglei Cheng,Anil Annadi,Shicheng Lu,Hyungwoo Lee,Jung-Woo Lee,Mengchen Huang,Chang-Beom Eom,Patrick Irvin,Jeremy Levy###
(638982, 638982)
 Our results suggest that theSdH oscillations in 2D SrTiO3-based systems may originate from naturallyforming quasi-1D<missing VAR> channels.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 2, 'D', 0]

SrTiO3
###Shubnikov-de Haas-like Quantum Oscillations in Artificial One-Dimensional LaAlO3/SrTiO3 Electron Channels|Guanglei Cheng,Anil Annadi,Shicheng Lu,Hyungwoo Lee,Jung-Woo Lee,Mengchen Huang,Chang-Beom Eom,Patrick Irvin,Jeremy Levy###
(638989, 638992)
 Our results suggest that theSdH oscillations in 2D SrTiO3-based systems may originate from naturallyforming quasi-1D<missing VAR> channels.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 2, 'D', 0]

SiGe
###Pure spin current transport in a SiGe alloy|T. Naito,M. Yamada,M. Tsukahara,S. Yamada,K. Sawano,K. Hamaya###
(639037, 639038)
Pure spin current transport in a SiGe alloy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 0.9, ',', 1],[187.0, 0.2, 'ns', 3]

Si
###Pure spin current transport in a SiGe alloy|T. Naito,M. Yamada,M. Tsukahara,S. Yamada,K. Sawano,K. Hamaya###
(639068, 639068)
 Using four-terminal nonlocal magnetoresistance measurements in lateralspin-valve devices with Sirm 0.1Germ 0.9, we study pure spincurrent transport in a degenerate SiGe alloy (n<missing VAR> sim 5.0 times 1018cm-3).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 0.9, ',', 0],[157.0, 0.2, 'ns', 2]

Ge
###Pure spin current transport in a SiGe alloy|T. Naito,M. Yamada,M. Tsukahara,S. Yamada,K. Sawano,K. Hamaya###
(639072, 639072)
 Using four-terminal nonlocal magnetoresistance measurements in lateralspin-valve devices with Sirm 0.1Germ 0.9, we study pure spincurrent transport in a degenerate SiGe alloy (n<missing VAR> sim 5.0 times 1018cm-3).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 0.9, ',', 0],[153.0, 0.2, 'ns', 2]

SiGe
###Pure spin current transport in a SiGe alloy|T. Naito,M. Yamada,M. Tsukahara,S. Yamada,K. Sawano,K. Hamaya###
(639097, 639098)
 Using four-terminal nonlocal magnetoresistance measurements in lateralspin-valve devices with Sirm 0.1Germ 0.9, we study pure spincurrent transport in a degenerate SiGe alloy (n<missing VAR> sim 5.0 times 1018cm-3).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 0.9, ',', 0],[127.0, 0.2, 'ns', 2]

Si
###Pure spin current transport in a SiGe alloy|T. Naito,M. Yamada,M. Tsukahara,S. Yamada,K. Sawano,K. Hamaya###
(639186, 639186)
 The spin diffusion length and spin lifetime of the Sirm0.1Germ 0.9 layer at low temperatures are reliably estimated to besim 0.5 mum<missing VAR> and sim 0.2 ns, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 0.9, ',', 2],[39.0, 0.2, 'ns', 0]

Ge
###Pure spin current transport in a SiGe alloy|T. Naito,M. Yamada,M. Tsukahara,S. Yamada,K. Sawano,K. Hamaya###
(639191, 639191)
 The spin diffusion length and spin lifetime of the Sirm0.1Germ 0.9 layer at low temperatures are reliably estimated to besim 0.5 mum<missing VAR> and sim 0.2 ns, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 0.9, ',', 2],[34.0, 0.2, 'ns', 0]

SiGe
###Pure spin current transport in a SiGe alloy|T. Naito,M. Yamada,M. Tsukahara,S. Yamada,K. Sawano,K. Hamaya###
(639259, 639260)
 This study demonstrates thepossibility of exploring physics and developing spintronic applications usingSiGe alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[184.0, 0.9, ',', 3],[34.0, 0.2, 'ns', 1]

HgBa2CuO4
###Angle-dependent magnetoresistance as a probe of Fermi surface warping in HgBa$_2$CuO$_{4+δ}$|Sylvia K. Lewin,James G. Analytis###
(639526, 639531)
Angle-dependent magnetoresistance as a probe of Fermi surface warping in HgBa2CuO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HgBa2CuO4
###Angle-dependent magnetoresistance as a probe of Fermi surface warping in HgBa$_2$CuO$_{4+δ}$|Sylvia K. Lewin,James G. Analytis###
(639555, 639560)
 We develop a model for the angle-dependent magnetoresistance ofHgBa2CuO4delta in the underdoped regime where the Fermi surface isthought to be reconstructed by an ordered state such as a charge density wave.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CrI3
###One million percent tunnel magnetoresistance in a magnetic van der Waals heterostructure|Hyun Ho Kim,Bowen Yang,Tarun Patel,Francois Sfigakis,Chenghe Li,Shangjie Tian,Hechang Lei,Adam W. Tsen###
(639793, 639795)
 We report the observation of a very large negative magnetoresistance effectin a van der Waals tunnel junction incorporating a thin magnetic semiconductor,CrI3, as the active layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 2, 'Tesla', 1]

At
###One million percent tunnel magnetoresistance in a magnetic van der Waals heterostructure|Hyun Ho Kim,Bowen Yang,Tarun Patel,Francois Sfigakis,Chenghe Li,Shangjie Tian,Hechang Lei,Adam W. Tsen###
(639807, 639807)
 At constant voltage bias, current increases bynearly one million percent upon application of a 2 Tesla field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 2, 'Tesla', 0]

CrI3
###One million percent tunnel magnetoresistance in a magnetic van der Waals heterostructure|Hyun Ho Kim,Bowen Yang,Tarun Patel,Francois Sfigakis,Chenghe Li,Shangjie Tian,Hechang Lei,Adam W. Tsen###
(639877, 639879)
 The effectarises from a change between antiparallel to parallel alignment of spins acrossthe different CrI3 layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 2, 'Tesla', 1]

CrI3
###One million percent tunnel magnetoresistance in a magnetic van der Waals heterostructure|Hyun Ho Kim,Bowen Yang,Tarun Patel,Francois Sfigakis,Chenghe Li,Shangjie Tian,Hechang Lei,Adam W. Tsen###
(639907, 639909)
 Our results elucidate the nature of the magneticstate in ultrathin CrI3 and present new opportunities for spintronics based ontwo-dimensional materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 2, 'Tesla', 2]

In
###Magnetic Tunnel Junction Performance Under Mechanical Strain|Niklas Roschewsky,Sebastian Schafer,Frances Hellman,Vladimir Nikitin###
(639958, 639958)
 In this work we investigate the effect of the mechanical stress on theperformance of magnetic tunnel junctions (MTJ) with perpendicular magneticanisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 50, '%', 2]

I
###Magnetic Tunnel Junction Performance Under Mechanical Strain|Niklas Roschewsky,Sebastian Schafer,Frances Hellman,Vladimir Nikitin###
(640116, 640116)
 This setup enables us to measure keydevice performance parameters, such as tunnel magnetoresistance (TMR),switching current (Ic<missing VAR>50%) and thermal stability (Delta), as afunction of applied stress.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 50, '%', 0]

SI2
###Magnetic Tunnel Junction Performance Under Mechanical Strain|Niklas Roschewsky,Sebastian Schafer,Frances Hellman,Vladimir Nikitin###
(640170, 640172)
 We find that variations in these parameters arenegligible less than SI2percent over the entire measured range betweenthe zero stress condition and the maximum stress at the point of waferbreakage.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 50, '%', 1]

In
###Quantum oscillations from the reconstructed Fermi surface in electron-doped cuprate superconductors|J S Higgins,M K Chan,Tarapada Sarkar,R D McDonald,R L Greene,N P Butch###
(640300, 640300)
 In optimally doped Pr2-xCex<missing VAR>CuO4pmdelta andLa2-xCex<missing VAR>CuO4pmdelta, quantum oscillations indicate thepresence of a small Fermi surface, demonstrating that electronic reconstructionis a general feature of the electron-doped cuprates, despite the location ofthe superconducting dome at very different doping levels.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pr2-xCe
###Quantum oscillations from the reconstructed Fermi surface in electron-doped cuprate superconductors|J S Higgins,M K Chan,Tarapada Sarkar,R D McDonald,R L Greene,N P Butch###
(640306, 640310)
 In optimally doped Pr2-xCex<missing VAR>CuO4pmdelta andLa2-xCex<missing VAR>CuO4pmdelta, quantum oscillations indicate thepresence of a small Fermi surface, demonstrating that electronic reconstructionis a general feature of the electron-doped cuprates, despite the location ofthe superconducting dome at very different doping levels.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

CuO4
###Quantum oscillations from the reconstructed Fermi surface in electron-doped cuprate superconductors|J S Higgins,M K Chan,Tarapada Sarkar,R D McDonald,R L Greene,N P Butch###
(640312, 640314)
 In optimally doped Pr2-xCex<missing VAR>CuO4pmdelta andLa2-xCex<missing VAR>CuO4pmdelta, quantum oscillations indicate thepresence of a small Fermi surface, demonstrating that electronic reconstructionis a general feature of the electron-doped cuprates, despite the location ofthe superconducting dome at very different doping levels.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La2-xCe
###Quantum oscillations from the reconstructed Fermi surface in electron-doped cuprate superconductors|J S Higgins,M K Chan,Tarapada Sarkar,R D McDonald,R L Greene,N P Butch###
(640321, 640325)
 In optimally doped Pr2-xCex<missing VAR>CuO4pmdelta andLa2-xCex<missing VAR>CuO4pmdelta, quantum oscillations indicate thepresence of a small Fermi surface, demonstrating that electronic reconstructionis a general feature of the electron-doped cuprates, despite the location ofthe superconducting dome at very different doping levels.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

CuO4
###Quantum oscillations from the reconstructed Fermi surface in electron-doped cuprate superconductors|J S Higgins,M K Chan,Tarapada Sarkar,R D McDonald,R L Greene,N P Butch###
(640327, 640329)
 In optimally doped Pr2-xCex<missing VAR>CuO4pmdelta andLa2-xCex<missing VAR>CuO4pmdelta, quantum oscillations indicate thepresence of a small Fermi surface, demonstrating that electronic reconstructionis a general feature of the electron-doped cuprates, despite the location ofthe superconducting dome at very different doping levels.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Electric and Magnetic Gating of Rashba-Active Weak Links|A. Aharony,O. Entin-Wohlman,M. Jonson,R. I. Shekhter###
(640798, 640798)
 In a one-dimensional weak-link wire the spin-orbit interaction (SOI) alonecannot generate a nonzero spin current.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(SOI)
###Electric and Magnetic Gating of Rashba-Active Weak Links|A. Aharony,O. Entin-Wohlman,M. Jonson,R. I. Shekhter###
(640820, 640824)
 In a one-dimensional weak-link wire the spin-orbit interaction (SOI) alonecannot generate a nonzero spin current.
Featurization successful!
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SOI
###Electric and Magnetic Gating of Rashba-Active Weak Links|A. Aharony,O. Entin-Wohlman,M. Jonson,R. I. Shekhter###
(640873, 640875)
 We show that a Zeeman field acting inthe wire in conjunction with the Rashba SOI there does yield such a current,whose magnitude and direction depend on the direction of the field.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SOI
###Electric and Magnetic Gating of Rashba-Active Weak Links|A. Aharony,O. Entin-Wohlman,M. Jonson,R. I. Shekhter###
(640941, 640943)
 When thisfield is not parallel to the effective field due to the SOI, both the chargeand the spin currents oscillate with the length of the wire.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SOI
###Electric and Magnetic Gating of Rashba-Active Weak Links|A. Aharony,O. Entin-Wohlman,M. Jonson,R. I. Shekhter###
(640999, 641001)
 Measuring theoscillating anisotropic magnetoresistance can thus yield information on the SOIstrength.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Scattering theory of magnetic/superconducting junctions with spin active interfaces|F. Romeo,R. Citro###
(641180, 641180)
 As a specificapplication of the theory, we analyze the conductance, the magnetoresistanceand the generation of spin-torque produced by an applied voltage in aspin-valve system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Thermal spin transport and spin-orbit interaction in ferromagnetic/non-magnetic metals|A. Slachter,F. L. Bakker,B. J. van Wees###
(641541, 641541)
 In this article we extend the currently established diffusion theory ofspin-dependent electrical conduction by including spin-dependentthermoelectricity and thermal transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr3Ru2O7
###Study of the electronic nematic phase of Sr$_3$Ru$_2$O$_7$ with precise control of the applied magnetic field vector|J. A. N. Bruin,R. A. Borzi,S. A. Grigera,A. W. Rost,R. S. Perry,A. P. Mackenzie###
(642329, 642334)
Study of the electronic nematic phase of Sr3Ru2O7 with precise control of the applied magnetic field vector.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr3Ru2O7
###Study of the electronic nematic phase of Sr$_3$Ru$_2$O$_7$ with precise control of the applied magnetic field vector|J. A. N. Bruin,R. A. Borzi,S. A. Grigera,A. W. Rost,R. S. Perry,A. P. Mackenzie###
(642375, 642380)
 We report a study of the magnetoresistivity of high purity Sr3Ru2O7,in the vicinity of its electronic nematic phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Study of the electronic nematic phase of Sr$_3$Ru$_2$O$_7$ with precise control of the applied magnetic field vector|J. A. N. Bruin,R. A. Borzi,S. A. Grigera,A. W. Rost,R. S. Perry,A. P. Mackenzie###
(642468, 642468)
 By employing a triple-axis(9/1/1T) vector magnet, we were able to precisely tune both the magnitude anddirection of the in-plane component of the magnetic field (Hparallel).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Study of the electronic nematic phase of Sr$_3$Ru$_2$O$_7$ with precise control of the applied magnetic field vector|J. A. N. Bruin,R. A. Borzi,S. A. Grigera,A. W. Rost,R. S. Perry,A. P. Mackenzie###
(642494, 642494)
 Wereport the dependence of the resistively determined anisotropy on Hparallelin the phase, as well as across the wider temperature-field region.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Current-induced spin torque resonance of magnetic insulators|Takahiro Chiba,Gerrit E. W. Bauer,Saburo Takahashi###
(642631, 642631)
 We formulate a theory of the AC spin Hall magnetoresistance (SMR) in abilayer system consisting of a magnetic insulator such as yttrium iron garnet(YIG) and a heavy metal such as platinum (Pt).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Current-induced spin torque resonance of magnetic insulators|Takahiro Chiba,Gerrit E. W. Bauer,Saburo Takahashi###
(642640, 642640)
 We formulate a theory of the AC spin Hall magnetoresistance (SMR) in abilayer system consisting of a magnetic insulator such as yttrium iron garnet(YIG) and a heavy metal such as platinum (Pt).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YI
###Current-induced spin torque resonance of magnetic insulators|Takahiro Chiba,Gerrit E. W. Bauer,Saburo Takahashi###
(642676, 642677)
 We formulate a theory of the AC spin Hall magnetoresistance (SMR) in abilayer system consisting of a magnetic insulator such as yttrium iron garnet(YIG) and a heavy metal such as platinum (Pt).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(Pt)
###Current-induced spin torque resonance of magnetic insulators|Takahiro Chiba,Gerrit E. W. Bauer,Saburo Takahashi###
(642695, 642697)
 We formulate a theory of the AC spin Hall magnetoresistance (SMR) in abilayer system consisting of a magnetic insulator such as yttrium iron garnet(YIG) and a heavy metal such as platinum (Pt).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Current-induced spin torque resonance of magnetic insulators|Takahiro Chiba,Gerrit E. W. Bauer,Saburo Takahashi###
(642711, 642711)
 We derive expressions for the D<missing VAR>Cvoltage generation based on the drift-diffusion spin model and quantummechanical boundary condition at the interface that reveal a spin torqueferromagnetic resonance (ST<missing VAR>-FMR).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Current-induced spin torque resonance of magnetic insulators|Takahiro Chiba,Gerrit E. W. Bauer,Saburo Takahashi###
(642765, 642765)
 We derive expressions for the D<missing VAR>Cvoltage generation based on the drift-diffusion spin model and quantummechanical boundary condition at the interface that reveal a spin torqueferromagnetic resonance (ST<missing VAR>-FMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Current-induced spin torque resonance of magnetic insulators|Takahiro Chiba,Gerrit E. W. Bauer,Saburo Takahashi###
(642768, 642768)
 We derive expressions for the D<missing VAR>Cvoltage generation based on the drift-diffusion spin model and quantummechanical boundary condition at the interface that reveal a spin torqueferromagnetic resonance (ST<missing VAR>-FMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Current-induced spin torque resonance of magnetic insulators|Takahiro Chiba,Gerrit E. W. Bauer,Saburo Takahashi###
(642780, 642780)
 We predict that ST<missing VAR>-FMR experiments willreveal valuable information on the current-induced magnetization dynamics ofmagnetic insulators and AC spin Hall effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Current-induced spin torque resonance of magnetic insulators|Takahiro Chiba,Gerrit E. W. Bauer,Saburo Takahashi###
(642783, 642783)
 We predict that ST<missing VAR>-FMR experiments willreveal valuable information on the current-induced magnetization dynamics ofmagnetic insulators and AC spin Hall effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Current-induced spin torque resonance of magnetic insulators|Takahiro Chiba,Gerrit E. W. Bauer,Saburo Takahashi###
(642820, 642820)
 We predict that ST<missing VAR>-FMR experiments willreveal valuable information on the current-induced magnetization dynamics ofmagnetic insulators and AC spin Hall effect.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Interface-dependent magnetotransport properties for thin Pt films on ferrimagnetic Y3Fe5O12|Y. Shiomi,T. Ohtani,S. Iguchi,T. Sasaki,Z. Qiu,H. Nakayama,K. Uchida,E. Saitoh###
(642849, 642849)
Interface-dependent magnetotransport properties for thin Pt films on ferrimagnetic Y3Fe5O12.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Y3Fe5O12
###Interface-dependent magnetotransport properties for thin Pt films on ferrimagnetic Y3Fe5O12|Y. Shiomi,T. Ohtani,S. Iguchi,T. Sasaki,Z. Qiu,H. Nakayama,K. Uchida,E. Saitoh###
(642857, 642862)
Interface-dependent magnetotransport properties for thin Pt films on ferrimagnetic Y3Fe5O12.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Interface-dependent magnetotransport properties for thin Pt films on ferrimagnetic Y3Fe5O12|Y. Shiomi,T. Ohtani,S. Iguchi,T. Sasaki,Z. Qiu,H. Nakayama,K. Uchida,E. Saitoh###
(642887, 642887)
 We have studied magnetoresistance and Hall effects for 1.8-nm-thick Pt filmsgrown on a ferrimagnetic insulator Y3Fe5O12 in a wide temperature (0.46-300 K)and magnetic-field (-15-15 T) region.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Y3Fe5O12
###Interface-dependent magnetotransport properties for thin Pt films on ferrimagnetic Y3Fe5O12|Y. Shiomi,T. Ohtani,S. Iguchi,T. Sasaki,Z. Qiu,H. Nakayama,K. Uchida,E. Saitoh###
(642902, 642907)
 We have studied magnetoresistance and Hall effects for 1.8-nm-thick Pt filmsgrown on a ferrimagnetic insulator Y3Fe5O12 in a wide temperature (0.46-300 K)and magnetic-field (-15-15 T) region.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Interface-dependent magnetotransport properties for thin Pt films on ferrimagnetic Y3Fe5O12|Y. Shiomi,T. Ohtani,S. Iguchi,T. Sasaki,Z. Qiu,H. Nakayama,K. Uchida,E. Saitoh###
(642922, 642922)
 We have studied magnetoresistance and Hall effects for 1.8-nm-thick Pt filmsgrown on a ferrimagnetic insulator Y3Fe5O12 in a wide temperature (0.46-300 K)and magnetic-field (-15-15 T) region.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Interface-dependent magnetotransport properties for thin Pt films on ferrimagnetic Y3Fe5O12|Y. Shiomi,T. Ohtani,S. Iguchi,T. Sasaki,Z. Qiu,H. Nakayama,K. Uchida,E. Saitoh###
(642944, 642944)
 In the low-temperature regime wherequantum corrections to conductivity are observed, weak antilocalizationbehavior observed in Pt films is critically suppressed when the film isattached to Y3Fe5O12.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Interface-dependent magnetotransport properties for thin Pt films on ferrimagnetic Y3Fe5O12|Y. Shiomi,T. Ohtani,S. Iguchi,T. Sasaki,Z. Qiu,H. Nakayama,K. Uchida,E. Saitoh###
(642981, 642981)
 In the low-temperature regime wherequantum corrections to conductivity are observed, weak antilocalizationbehavior observed in Pt films is critically suppressed when the film isattached to Y3Fe5O12.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Y3Fe5O12
###Interface-dependent magnetotransport properties for thin Pt films on ferrimagnetic Y3Fe5O12|Y. Shiomi,T. Ohtani,S. Iguchi,T. Sasaki,Z. Qiu,H. Nakayama,K. Uchida,E. Saitoh###
(643004, 643009)
 In the low-temperature regime wherequantum corrections to conductivity are observed, weak antilocalizationbehavior observed in Pt films is critically suppressed when the film isattached to Y3Fe5O12.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Interface-dependent magnetotransport properties for thin Pt films on ferrimagnetic Y3Fe5O12|Y. Shiomi,T. Ohtani,S. Iguchi,T. Sasaki,Z. Qiu,H. Nakayama,K. Uchida,E. Saitoh###
(643020, 643020)
 Hall resistance in the Pt film is also affected byY3Fe5O12, and it exhibits logarithmic temperature dependence in a broadtemperature range.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Y3Fe5O12
###Interface-dependent magnetotransport properties for thin Pt films on ferrimagnetic Y3Fe5O12|Y. Shiomi,T. Ohtani,S. Iguchi,T. Sasaki,Z. Qiu,H. Nakayama,K. Uchida,E. Saitoh###
(643033, 643038)
 Hall resistance in the Pt film is also affected byY3Fe5O12, and it exhibits logarithmic temperature dependence in a broadtemperature range.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Interface-dependent magnetotransport properties for thin Pt films on ferrimagnetic Y3Fe5O12|Y. Shiomi,T. Ohtani,S. Iguchi,T. Sasaki,Z. Qiu,H. Nakayama,K. Uchida,E. Saitoh###
(643096, 643096)
 The magnetotransport properties in the high-field range aresignificantly influenced by the interface between Pt and Y3Fe5O12.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Y3Fe5O12
###Interface-dependent magnetotransport properties for thin Pt films on ferrimagnetic Y3Fe5O12|Y. Shiomi,T. Ohtani,S. Iguchi,T. Sasaki,Z. Qiu,H. Nakayama,K. Uchida,E. Saitoh###
(643100, 643105)
 The magnetotransport properties in the high-field range aresignificantly influenced by the interface between Pt and Y3Fe5O12.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YBa2Cu3O7
###Competition between covalent bonding and charge transfer at complex-oxide interfaces|Juan Salafranca,Julian Rincon,Javier Tornos,Carlos León,Jacobo Santamaria,Elbio Dagotto,Stephen J. Pennycook,Maria Varela###
(643225, 643231)
 Bymeans of atomic resolution electron microscopy and spectroscopy, we produce asubnanometer scale map of the transition metal oxidation state profile acrossthe interface between the high Tc superconductor YBa2Cu3O7-deltaand the colossal magnetoresistance compound (La,Ca)MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5384615384615384,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23076923076923078,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15384615384615385,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La
###Competition between covalent bonding and charge transfer at complex-oxide interfaces|Juan Salafranca,Julian Rincon,Javier Tornos,Carlos León,Jacobo Santamaria,Elbio Dagotto,Stephen J. Pennycook,Maria Varela###
(643247, 643247)
 Bymeans of atomic resolution electron microscopy and spectroscopy, we produce asubnanometer scale map of the transition metal oxidation state profile acrossthe interface between the high Tc superconductor YBa2Cu3O7-deltaand the colossal magnetoresistance compound (La,Ca)MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ca
###Competition between covalent bonding and charge transfer at complex-oxide interfaces|Juan Salafranca,Julian Rincon,Javier Tornos,Carlos León,Jacobo Santamaria,Elbio Dagotto,Stephen J. Pennycook,Maria Varela###
(643249, 643249)
 Bymeans of atomic resolution electron microscopy and spectroscopy, we produce asubnanometer scale map of the transition metal oxidation state profile acrossthe interface between the high Tc superconductor YBa2Cu3O7-deltaand the colossal magnetoresistance compound (La,Ca)MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnO3
###Competition between covalent bonding and charge transfer at complex-oxide interfaces|Juan Salafranca,Julian Rincon,Javier Tornos,Carlos León,Jacobo Santamaria,Elbio Dagotto,Stephen J. Pennycook,Maria Varela###
(643251, 643253)
 Bymeans of atomic resolution electron microscopy and spectroscopy, we produce asubnanometer scale map of the transition metal oxidation state profile acrossthe interface between the high Tc superconductor YBa2Cu3O7-deltaand the colossal magnetoresistance compound (La,Ca)MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Competition between covalent bonding and charge transfer at complex-oxide interfaces|Juan Salafranca,Julian Rincon,Javier Tornos,Carlos León,Jacobo Santamaria,Elbio Dagotto,Stephen J. Pennycook,Maria Varela###
(643355, 643355)
 Model calculations rationalize the profile in terms of thecompetition between standard charge transfer tendencies (due to band mismatch),strong chemical bonding effects across the interface, and Cu substitution intothe Mn lattice, with different characteristic length scales.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Competition between covalent bonding and charge transfer at complex-oxide interfaces|Juan Salafranca,Julian Rincon,Javier Tornos,Carlos León,Jacobo Santamaria,Elbio Dagotto,Stephen J. Pennycook,Maria Varela###
(643364, 643364)
 Model calculations rationalize the profile in terms of thecompetition between standard charge transfer tendencies (due to band mismatch),strong chemical bonding effects across the interface, and Cu substitution intothe Mn lattice, with different characteristic length scales.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Magnetoresistance of monolayer graphene with short-range scattering|G. Yu. Vasileva,P. S. Alekseev,Yu. B. Vasilyev,Yu. L. Ivanov,D. Smirnov,H. Schmidt,R. J. Haug###
(643451, 643451)
 A square rootmagnetoresistance (SRMR) behavior is observed in one sample which has thecharacteristic sub-linear conductivity signaling on the presence of short-rangedisorder in this sample.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

No
###Magnetoresistance of monolayer graphene with short-range scattering|G. Yu. Vasileva,P. S. Alekseev,Yu. B. Vasilyev,Yu. L. Ivanov,D. Smirnov,H. Schmidt,R. J. Haug###
(643508, 643508)
 No square root MR was observed in other samples whereshort-range scattering is inessential as it is evident from the gate voltagedependences of their conductivities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0
Abstract does not contain any numbers.

S
###Magnetoresistance of monolayer graphene with short-range scattering|G. Yu. Vasileva,P. S. Alekseev,Yu. B. Vasilyev,Yu. L. Ivanov,D. Smirnov,H. Schmidt,R. J. Haug###
(643627, 643627)
 Comparing our experimental data for thesample with theoretical calculations we found a good qualitative agreement andestablished the conditions which should be fulfilled in graphene to observe theSRMR experimentally.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeSe
###Normal state magnetotransport properties of $β$-FeSe superconductors|J. D. Querales-Flores,M. L. Amigó,G. Nieva,C. I. Ventura###
(643654, 643655)
Normal state magnetotransport properties of -FeSe superconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 16, 'Tesla', 4]

FeSe
###Normal state magnetotransport properties of $β$-FeSe superconductors|J. D. Querales-Flores,M. L. Amigó,G. Nieva,C. I. Ventura###
(643666, 643667)
 We present beta-FeSe magnetotransport data, and describe themtheoretically.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 16, 'Tesla', 3]

Fe
###Normal state magnetotransport properties of $β$-FeSe superconductors|J. D. Querales-Flores,M. L. Amigó,G. Nieva,C. I. Ventura###
(643746, 643746)
 With model parameters relevant forFe-chalcogenides, we describe the observed effect of the structural transitionon the ab-plane electrical resistivity, as well as on the magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 16, 'Tesla', 1]

Ta2PdTe6
###Violation of Kohler rule in Ta2PdTe6 and absence of same in Nb2PdS5- A high field magneto transport study|Reena Goyal,Rajveer Jha,V. P. S. Awana###
(643912, 643916)
Violation of Kohler rule in Ta2PdTe6 and absence of same in Nb2PdS5- A high field magneto transport study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1111111111111111,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nb2PdS5
###Violation of Kohler rule in Ta2PdTe6 and absence of same in Nb2PdS5- A high field magneto transport study|Reena Goyal,Rajveer Jha,V. P. S. Awana###
(643928, 643932)
Violation of Kohler rule in Ta2PdTe6 and absence of same in Nb2PdS5- A high field magneto transport study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.625,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ta2PdTe6
###Violation of Kohler rule in Ta2PdTe6 and absence of same in Nb2PdS5- A high field magneto transport study|Reena Goyal,Rajveer Jha,V. P. S. Awana###
(643974, 643978)
 Here, we present the comparative study of magnetotransport properties ofrecently discovered Ta2PdTe6 and Nb2PdS5 superconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1111111111111111,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nb2PdS5
###Violation of Kohler rule in Ta2PdTe6 and absence of same in Nb2PdS5- A high field magneto transport study|Reena Goyal,Rajveer Jha,V. P. S. Awana###
(643982, 643986)
 Here, we present the comparative study of magnetotransport properties ofrecently discovered Ta2PdTe6 and Nb2PdS5 superconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.625,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C2
###Violation of Kohler rule in Ta2PdTe6 and absence of same in Nb2PdS5- A high field magneto transport study|Reena Goyal,Rajveer Jha,V. P. S. Awana###
(644072, 644073)
 Both the compounds are crystallized inmonoclinic structure within space group C2m<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ta2PdTe6
###Violation of Kohler rule in Ta2PdTe6 and absence of same in Nb2PdS5- A high field magneto transport study|Reena Goyal,Rajveer Jha,V. P. S. Awana###
(644095, 644099)
 Here, we observe superconductivityin both the compounds Ta2PdTe6 (Tc 4.4 K) and Nb2PdS5 (Tc 6.6 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1111111111111111,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###Violation of Kohler rule in Ta2PdTe6 and absence of same in Nb2PdS5- A high field magneto transport study|Reena Goyal,Rajveer Jha,V. P. S. Awana###
(644102, 644102)
 Here, we observe superconductivityin both the compounds Ta2PdTe6 (Tc 4.4 K) and Nb2PdS5 (Tc 6.6 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Violation of Kohler rule in Ta2PdTe6 and absence of same in Nb2PdS5- A high field magneto transport study|Reena Goyal,Rajveer Jha,V. P. S. Awana###
(644106, 644106)
 Here, we observe superconductivityin both the compounds Ta2PdTe6 (Tc 4.4 K) and Nb2PdS5 (Tc 6.6 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nb2PdS5
###Violation of Kohler rule in Ta2PdTe6 and absence of same in Nb2PdS5- A high field magneto transport study|Reena Goyal,Rajveer Jha,V. P. S. Awana###
(644111, 644115)
 Here, we observe superconductivityin both the compounds Ta2PdTe6 (Tc 4.4 K) and Nb2PdS5 (Tc 6.6 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.625,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###Violation of Kohler rule in Ta2PdTe6 and absence of same in Nb2PdS5- A high field magneto transport study|Reena Goyal,Rajveer Jha,V. P. S. Awana###
(644118, 644118)
 Here, we observe superconductivityin both the compounds Ta2PdTe6 (Tc 4.4 K) and Nb2PdS5 (Tc 6.6 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Violation of Kohler rule in Ta2PdTe6 and absence of same in Nb2PdS5- A high field magneto transport study|Reena Goyal,Rajveer Jha,V. P. S. Awana###
(644122, 644122)
 Here, we observe superconductivityin both the compounds Ta2PdTe6 (Tc 4.4 K) and Nb2PdS5 (Tc 6.6 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ta2PdTe6
###Violation of Kohler rule in Ta2PdTe6 and absence of same in Nb2PdS5- A high field magneto transport study|Reena Goyal,Rajveer Jha,V. P. S. Awana###
(644139, 644143)
 We see alinear magnetoresistance in Ta2PdTe6 as well as violation of Kohler rule insame compound.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1111111111111111,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nb2PdS5
###Violation of Kohler rule in Ta2PdTe6 and absence of same in Nb2PdS5- A high field magneto transport study|Reena Goyal,Rajveer Jha,V. P. S. Awana###
(644190, 644194)
 On the other hand, we find the absence of same in Nb2PdS5compound.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.625,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Al
###Magnetoquantum oscillations in the resistance of metallic point contacts: Influence of nonequilibrium phonons|N. L. Bobrov,J. A. Kokkedee,N. N. Gribov,I. K. Yanson,A. G. M. Jansen,P. Wyder###
(644249, 644249)
 The amplitude of magnetoresistance quantum oscillations of Al and Be pointcontacts in a magnetic field parallel to the contact axis has been studied as afunction of voltage applied over the contact.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Be
###Magnetoquantum oscillations in the resistance of metallic point contacts: Influence of nonequilibrium phonons|N. L. Bobrov,J. A. Kokkedee,N. N. Gribov,I. K. Yanson,A. G. M. Jansen,P. Wyder###
(644253, 644253)
 The amplitude of magnetoresistance quantum oscillations of Al and Be pointcontacts in a magnetic field parallel to the contact axis has been studied as afunction of voltage applied over the contact.
Featurization terminated normally.
0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Dynamic Feedback in Ferromagnet/Spin Hall Metal Heterostructures|Ran Cheng,Jian-Gang Zhu,Di Xiao###
(644449, 644449)
 In ferromagnet/normal metal heterostructures, spin pumping and spin-transfertorques are two reciprocal processes that occur concomitantly.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.7Sr0.3MnO3
###The effect of interface roughness on exchange bias in La0.7Sr0.3MnO3 - BiFeO3 heterostructures|Mehran Vafaee,Simone Finizio,Hakan Deniz,Dietrich Hesse,Hartmut Zabel,Gerhard Jakob,Mathias Kläui###
(644696, 644702)
The effect of interface roughness on exchange bias in La0.7Sr0.3MnO3 - BiFeO3 heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BiFeO3
###The effect of interface roughness on exchange bias in La0.7Sr0.3MnO3 - BiFeO3 heterostructures|Mehran Vafaee,Simone Finizio,Hakan Deniz,Dietrich Hesse,Hartmut Zabel,Gerhard Jakob,Mathias Kläui###
(644706, 644709)
The effect of interface roughness on exchange bias in La0.7Sr0.3MnO3 - BiFeO3 heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.7Sr0.3MnO3/BiFeO3
###The effect of interface roughness on exchange bias in La0.7Sr0.3MnO3 - BiFeO3 heterostructures|Mehran Vafaee,Simone Finizio,Hakan Deniz,Dietrich Hesse,Hartmut Zabel,Gerhard Jakob,Mathias Kläui###
(644737, 644748)
 We characterized the interfaces of heterostructures with different stacksequences of La0.7Sr0.3MnO3/BiFeO3 (LSMO/BFO) and BFO/LSMO using TEM revealingsharp and rough interfaces, respectively.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

O
###The effect of interface roughness on exchange bias in La0.7Sr0.3MnO3 - BiFeO3 heterostructures|Mehran Vafaee,Simone Finizio,Hakan Deniz,Dietrich Hesse,Hartmut Zabel,Gerhard Jakob,Mathias Kläui###
(644758, 644758)
 We characterized the interfaces of heterostructures with different stacksequences of La0.7Sr0.3MnO3/BiFeO3 (LSMO/BFO) and BFO/LSMO using TEM revealingsharp and rough interfaces, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BFO
###The effect of interface roughness on exchange bias in La0.7Sr0.3MnO3 - BiFeO3 heterostructures|Mehran Vafaee,Simone Finizio,Hakan Deniz,Dietrich Hesse,Hartmut Zabel,Gerhard Jakob,Mathias Kläui###
(644763, 644765)
 We characterized the interfaces of heterostructures with different stacksequences of La0.7Sr0.3MnO3/BiFeO3 (LSMO/BFO) and BFO/LSMO using TEM revealingsharp and rough interfaces, respectively.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###The effect of interface roughness on exchange bias in La0.7Sr0.3MnO3 - BiFeO3 heterostructures|Mehran Vafaee,Simone Finizio,Hakan Deniz,Dietrich Hesse,Hartmut Zabel,Gerhard Jakob,Mathias Kläui###
(644770, 644770)
 We characterized the interfaces of heterostructures with different stacksequences of La0.7Sr0.3MnO3/BiFeO3 (LSMO/BFO) and BFO/LSMO using TEM revealingsharp and rough interfaces, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TmB4
###Hysteretic magnetoresistance and unconventional anomalous Hall effect in the frustrated magnet TmB_4|Sai Swaroop Sunku,Tai Kong,Toshimitsu Ito,Paul C. Canfield,B. Sriram Shastry,Pinaki Sengupta,Christos Panagopoulos###
(644968, 644970)
Hysteretic magnetoresistance and unconventional anomalous Hall effect in the frustrated magnet TmB4.
Featurization terminated normally.
0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TmB4
###Hysteretic magnetoresistance and unconventional anomalous Hall effect in the frustrated magnet TmB_4|Sai Swaroop Sunku,Tai Kong,Toshimitsu Ito,Paul C. Canfield,B. Sriram Shastry,Pinaki Sengupta,Christos Panagopoulos###
(644977, 644979)
 We study TmB4, a frustrated magnet on the Archimedean Shastry-Sutherlandlattice, through magnetization and transport experiments.
Featurization terminated normally.
0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TmB4
###Hysteretic magnetoresistance and unconventional anomalous Hall effect in the frustrated magnet TmB_4|Sai Swaroop Sunku,Tai Kong,Toshimitsu Ito,Paul C. Canfield,B. Sriram Shastry,Pinaki Sengupta,Christos Panagopoulos###
(645030, 645032)
 The lack ofanisotropy in resistivity shows that TmB4 is an electronicallythree-dimensional system.
Featurization terminated normally.
0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Hysteretic magnetoresistance and unconventional anomalous Hall effect in the frustrated magnet TmB_4|Sai Swaroop Sunku,Tai Kong,Toshimitsu Ito,Paul C. Canfield,B. Sriram Shastry,Pinaki Sengupta,Christos Panagopoulos###
(645106, 645106)
 The Hall resistivity shows unconventional anomalous Hall effect (AHE)and is linear above saturation despite a large MR.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Hysteretic magnetoresistance and unconventional anomalous Hall effect in the frustrated magnet TmB_4|Sai Swaroop Sunku,Tai Kong,Toshimitsu Ito,Paul C. Canfield,B. Sriram Shastry,Pinaki Sengupta,Christos Panagopoulos###
(645179, 645179)
 We propose that complexstructures at magnetic domain walls may be responsible for the hysteretic MRand may also lead to the AHE<missing VAR>.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaMnO3
###Uniaxial pressure induced half-metallic ferromagnetic phase transition in LaMnO$_3$|Pablo Rivero,Vincent Meunier,William Shelton###
(645209, 645212)
Uniaxial pressure induced half-metallic ferromagnetic phase transition in LaMnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 6, 'GPa', 3]

LaMnO3
###Uniaxial pressure induced half-metallic ferromagnetic phase transition in LaMnO$_3$|Pablo Rivero,Vincent Meunier,William Shelton###
(645275, 645278)
 We use first-principles theory to predict that the application of uniaxialcompressive strain leads to a transition from an antiferromagnetic insulator toa ferromagnetic half-metal phase in LaMnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 6, 'GPa', 2]

LaMnO3
###Uniaxial pressure induced half-metallic ferromagnetic phase transition in LaMnO$_3$|Pablo Rivero,Vincent Meunier,William Shelton###
(645421, 645424)
 Thehalf-metallicity opens the possibility of producing colossal magnetoresistancein the stoichiometric LaMnO3 compound at significantly lower pressurecompared to recently observed investigations using hydrostatic pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 6, 'GPa', 1]

CN
###Comparative Studies on Giant Magnetoresistance in Carbon Nanotubes and Graphene Nanoribbons with Ferromagnetic Contacts|S. Krompiewski###
(645523, 645524)
 This contribution reports on comparative studies on giant magnetoresistance(GMR) in carbon nanotubes (CNTs) and graphene nanoribbons of similar aspectratios (i.e perimeter/length and width/length ratios, for the former and thelatter, respectively).
Featurization terminated normally.
0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CN
###Comparative Studies on Giant Magnetoresistance in Carbon Nanotubes and Graphene Nanoribbons with Ferromagnetic Contacts|S. Krompiewski###
(645675, 645676)
 The GMR effect in graphene is comparable to that of CNTs, itdepends strongly on the chirality and only slightly on the aspect ratio.
Featurization terminated normally.
0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CN
###Comparative Studies on Giant Magnetoresistance in Carbon Nanotubes and Graphene Nanoribbons with Ferromagnetic Contacts|S. Krompiewski###
(645724, 645725)
 Itturns out that graphene, analogously to CNTs may be quite an interestingmaterial for spintronic applications.
Featurization terminated normally.
0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Voltage Asymmetry of Spin-Transfer Torques|Deepanjan Datta,Behtash Behin-Aein,Sayeef Salahuddin,Supriyo Datta###
(645798, 645798)
 We present a Non-Equilibrium Greens<missing VAR> Function based model for spin torquetransfer (STT) devices which provides quantitative agreement withexperimentally measured (1) differential resistances, (2) Magnetoresistance(MR), (3) In-plane torque and (4) out-of-plane torque over a range of biasvoltages, using a single set of three adjustable parameters.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Voltage Asymmetry of Spin-Transfer Torques|Deepanjan Datta,Behtash Behin-Aein,Sayeef Salahuddin,Supriyo Datta###
(645846, 645846)
 We present a Non-Equilibrium Greens<missing VAR> Function based model for spin torquetransfer (STT) devices which provides quantitative agreement withexperimentally measured (1) differential resistances, (2) Magnetoresistance(MR), (3) In-plane torque and (4) out-of-plane torque over a range of biasvoltages, using a single set of three adjustable parameters.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Magnetoresistance in Single Layer Graphene: Weak Localization and Universal Conductance Fluctuation Studies|Yung-Fu Chen,Myung-Ho Bae,Cesar Chialvo,Travis Dirks,Alexey Bezryadin,Nadya Mason###
(646115, 646115)
 By examining signaturesof weak localization (WL) and universal conductance fluctuations (UCF), we finda consistent picture of phase coherence loss due to electron-electroninteractions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 250, 'mK', 1]

(UCF)
###Magnetoresistance in Single Layer Graphene: Weak Localization and Universal Conductance Fluctuation Studies|Yung-Fu Chen,Myung-Ho Bae,Cesar Chialvo,Travis Dirks,Alexey Bezryadin,Nadya Mason###
(646127, 646131)
 By examining signaturesof weak localization (WL) and universal conductance fluctuations (UCF), we finda consistent picture of phase coherence loss due to electron-electroninteractions.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[29.0, 250, 'mK', 1]

In
###Magnetoresistance in Single Layer Graphene: Weak Localization and Universal Conductance Fluctuation Studies|Yung-Fu Chen,Myung-Ho Bae,Cesar Chialvo,Travis Dirks,Alexey Bezryadin,Nadya Mason###
(646258, 646258)
 In addition, a decrease in UCF amplitudewith decreasing carrier density can be explained by a corresponding loss ofphase coherence.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 250, 'mK', 4]

UCF
###Magnetoresistance in Single Layer Graphene: Weak Localization and Universal Conductance Fluctuation Studies|Yung-Fu Chen,Myung-Ho Bae,Cesar Chialvo,Travis Dirks,Alexey Bezryadin,Nadya Mason###
(646269, 646271)
 In addition, a decrease in UCF amplitudewith decreasing carrier density can be explained by a corresponding loss ofphase coherence.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[171.0, 250, 'mK', 4]

Co2
###Direct determination of the surface termination in full Heusler alloys by means of low energy electron diffraction|Jan-Peter Wüstenberg,Takayuki Ishikawa,Masafumi Yamamoto,Christian Herbort,Martin Jourdan,Martin Aeschlimann,Mirko Cinchetti###
(646439, 646440)
 Using low energy electron diffraction (LEED), one cannon-destructively distinguish between important surface terminations of Co2X<missing VAR>Yfull-Heusler alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Y
###Direct determination of the surface termination in full Heusler alloys by means of low energy electron diffraction|Jan-Peter Wüstenberg,Takayuki Ishikawa,Masafumi Yamamoto,Christian Herbort,Martin Jourdan,Martin Aeschlimann,Mirko Cinchetti###
(646442, 646442)
 Using low energy electron diffraction (LEED), one cannon-destructively distinguish between important surface terminations of Co2X<missing VAR>Yfull-Heusler alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Y
###Direct determination of the surface termination in full Heusler alloys by means of low energy electron diffraction|Jan-Peter Wüstenberg,Takayuki Ishikawa,Masafumi Yamamoto,Christian Herbort,Martin Jourdan,Martin Aeschlimann,Mirko Cinchetti###
(646475, 646475)
 We present an analysis of the LEED patterns of the Y-Z<missing VAR>,the vacancy-Z<missing VAR>, the Co and the disordered B2 and A2 terminations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Direct determination of the surface termination in full Heusler alloys by means of low energy electron diffraction|Jan-Peter Wüstenberg,Takayuki Ishikawa,Masafumi Yamamoto,Christian Herbort,Martin Jourdan,Martin Aeschlimann,Mirko Cinchetti###
(646490, 646490)
 We present an analysis of the LEED patterns of the Y-Z<missing VAR>,the vacancy-Z<missing VAR>, the Co and the disordered B2 and A2 terminations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B2
###Direct determination of the surface termination in full Heusler alloys by means of low energy electron diffraction|Jan-Peter Wüstenberg,Takayuki Ishikawa,Masafumi Yamamoto,Christian Herbort,Martin Jourdan,Martin Aeschlimann,Mirko Cinchetti###
(646498, 646499)
 We present an analysis of the LEED patterns of the Y-Z<missing VAR>,the vacancy-Z<missing VAR>, the Co and the disordered B2 and A2 terminations.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Direct determination of the surface termination in full Heusler alloys by means of low energy electron diffraction|Jan-Peter Wüstenberg,Takayuki Ishikawa,Masafumi Yamamoto,Christian Herbort,Martin Jourdan,Martin Aeschlimann,Mirko Cinchetti###
(646509, 646509)
 As anexample, we show that the surface geometries of bulk L<missing VAR>21 ordered Co2MnSi andbulk B2 disordered Co2Cr0.6Fe0.4Al can be determined by comparing theexperimental LEED patterns with the presented reference patterns.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co2MnSi
###Direct determination of the surface termination in full Heusler alloys by means of low energy electron diffraction|Jan-Peter Wüstenberg,Takayuki Ishikawa,Masafumi Yamamoto,Christian Herbort,Martin Jourdan,Martin Aeschlimann,Mirko Cinchetti###
(646538, 646541)
 As anexample, we show that the surface geometries of bulk L<missing VAR>21 ordered Co2MnSi andbulk B2 disordered Co2Cr0.6Fe0.4Al can be determined by comparing theexperimental LEED patterns with the presented reference patterns.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B2
###Direct determination of the surface termination in full Heusler alloys by means of low energy electron diffraction|Jan-Peter Wüstenberg,Takayuki Ishikawa,Masafumi Yamamoto,Christian Herbort,Martin Jourdan,Martin Aeschlimann,Mirko Cinchetti###
(646548, 646549)
 As anexample, we show that the surface geometries of bulk L<missing VAR>21 ordered Co2MnSi andbulk B2 disordered Co2Cr0.6Fe0.4Al can be determined by comparing theexperimental LEED patterns with the presented reference patterns.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co2Cr0.6Fe0.4Al
###Direct determination of the surface termination in full Heusler alloys by means of low energy electron diffraction|Jan-Peter Wüstenberg,Takayuki Ishikawa,Masafumi Yamamoto,Christian Herbort,Martin Jourdan,Martin Aeschlimann,Mirko Cinchetti###
(646553, 646559)
 As anexample, we show that the surface geometries of bulk L<missing VAR>21 ordered Co2MnSi andbulk B2 disordered Co2Cr0.6Fe0.4Al can be determined by comparing theexperimental LEED patterns with the presented reference patterns.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.15,0,0.1,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi1-xSb
###Oscillatory angular dependence of the magnetoresistance in a topological insulator Bi_{1-x}Sb_{x}|A. A. Taskin,Kouji Segawa,Yoichi Ando###
(646622, 646626)
Oscillatory angular dependence of the magnetoresistance in a topological insulator Bi1-xSbx<missing VAR>.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[177.0, 2, 'D', 2],[186.0, 3, 'D', 2]

Bi0.91Sb0.09
###Oscillatory angular dependence of the magnetoresistance in a topological insulator Bi_{1-x}Sb_{x}|A. A. Taskin,Kouji Segawa,Yoichi Ando###
(646663, 646666)
 The angular-dependent magnetoresistance and the Shubnikov-de Haasoscillations are studied in a topological insulator Bi0.91Sb0.09, wherethe two-dimensional (2D) surface states coexist with a three-dimensional (3D)bulk Fermi surface (FS).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.09,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.91,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 2, 'D', 1],[146.0, 3, 'D', 1]

(FS)
###Oscillatory angular dependence of the magnetoresistance in a topological insulator Bi_{1-x}Sb_{x}|A. A. Taskin,Kouji Segawa,Yoichi Ando###
(646709, 646712)
 The angular-dependent magnetoresistance and the Shubnikov-de Haasoscillations are studied in a topological insulator Bi0.91Sb0.09, wherethe two-dimensional (2D) surface states coexist with a three-dimensional (3D)bulk Fermi surface (FS).
Featurization successful!
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 2, 'D', 1],[100.0, 3, 'D', 1]

FS
###Oscillatory angular dependence of the magnetoresistance in a topological insulator Bi_{1-x}Sb_{x}|A. A. Taskin,Kouji Segawa,Yoichi Ando###
(646814, 646815)
 Two distinct types of oscillatory phenomena arediscovered in the angular-dependence The one observed at lower fields is shownto originate from the surface state, which resides on the (2bar1bar1)plane, giving a new way to distinguish the 2D surface state from the 3D FS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 2, 'D', 0],[2.0, 3, 'D', 0]

Co2Fe(Ge0.5Ga0.5)
###Large amplitude microwave emission and reduced nonlinear phase noise in Co2Fe(Ge0.5Ga0.5) Heusler alloy based pseudo spin valve nanopillars|Jaivardhan Sinha,Masamitsu Hayashi,Yukiko K. Takahashi,Tomohiro Taniguchi,Maksim Drapeko,Seiji Mitani,Kazuhiro Hono###
(647173, 647181)
Large amplitude microwave emission and reduced nonlinear phase noise in Co2Fe(Ge0.5Ga0.5) Heusler alloy based pseudo spin valve nanopillars.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.5,0,0,0,0.125,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 150, 'nV', 2],[78.0, 0.5, ',', 2],[104.0, 10, 'MHz', 2]

Co2Fe(Ga0.5Ge0.5)
###Large amplitude microwave emission and reduced nonlinear phase noise in Co2Fe(Ge0.5Ga0.5) Heusler alloy based pseudo spin valve nanopillars|Jaivardhan Sinha,Masamitsu Hayashi,Yukiko K. Takahashi,Tomohiro Taniguchi,Maksim Drapeko,Seiji Mitani,Kazuhiro Hono###
(647235, 647243)
 We have studied microwave emission from a current-perpendicular-to-planepseudo spin valve nanopillars with Heusler alloy Co2Fe(Ga0.5Ge0.5) electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.5,0,0,0,0.125,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 150, 'nV', 1],[16.0, 0.5, ',', 1],[42.0, 10, 'MHz', 1]

Nb
###Transport Measurements on Nano-engineered Two Dimensional Superconducting Wire Networks|W. J. Zhang,S. K. He,H. Xiao,G. M. Xue,Z. C. Wen,X. F. Han,S. P. Zhao,C. Z. Gu,X. G. Qiu###
(647449, 647449)
 Superconducting triangular Nb wire networks with high normal-state resistanceare fabricated by using a negative tone hydrogen silsesquioxane (HSQ) resist.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 2, ',', 2],[121.0, 3, ',', 2],[144.0, 0, ',', 2]

HS
###Transport Measurements on Nano-engineered Two Dimensional Superconducting Wire Networks|W. J. Zhang,S. K. He,H. Xiao,G. M. Xue,Z. C. Wen,X. F. Han,S. P. Zhao,C. Z. Gu,X. G. Qiu###
(647485, 647486)
 Superconducting triangular Nb wire networks with high normal-state resistanceare fabricated by using a negative tone hydrogen silsesquioxane (HSQ) resist.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 2, ',', 2],[84.0, 3, ',', 2],[107.0, 0, ',', 2]

In
###Galvanomagnetic effects and manipulation of antiferromagnetic interfacial uncompensated magnetic moment in exchange-biased bilayers|X. Zhou,L. Ma,Z. Shi,W. J. Fan,R. F. L. Evans,R. W. Chantrell,S. Mangin,H. W. Zhang,S. M. Zhou###
(647926, 647926)
 In this work, IrMn3/insulating-Y3Fe5O12 exchange-biasedbilayers are studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

IrMn3
###Galvanomagnetic effects and manipulation of antiferromagnetic interfacial uncompensated magnetic moment in exchange-biased bilayers|X. Zhou,L. Ma,Z. Shi,W. J. Fan,R. F. L. Evans,R. W. Chantrell,S. Mangin,H. W. Zhang,S. M. Zhou###
(647933, 647935)
 In this work, IrMn3/insulating-Y3Fe5O12 exchange-biasedbilayers are studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Y3Fe5O12
###Galvanomagnetic effects and manipulation of antiferromagnetic interfacial uncompensated magnetic moment in exchange-biased bilayers|X. Zhou,L. Ma,Z. Shi,W. J. Fan,R. F. L. Evans,R. W. Chantrell,S. Mangin,H. W. Zhang,S. M. Zhou###
(647939, 647944)
 In this work, IrMn3/insulating-Y3Fe5O12 exchange-biasedbilayers are studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Galvanomagnetic effects and manipulation of antiferromagnetic interfacial uncompensated magnetic moment in exchange-biased bilayers|X. Zhou,L. Ma,Z. Shi,W. J. Fan,R. F. L. Evans,R. W. Chantrell,S. Mangin,H. W. Zhang,S. M. Zhou###
(647976, 647976)
 The behavior of the net magnetic moment Delta m<missing VAR>AFM<missing VAR>in the antiferromagnet is directly probed by anomalous and planar Hall effects,and anisotropic magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Galvanomagnetic effects and manipulation of antiferromagnetic interfacial uncompensated magnetic moment in exchange-biased bilayers|X. Zhou,L. Ma,Z. Shi,W. J. Fan,R. F. L. Evans,R. W. Chantrell,S. Mangin,H. W. Zhang,S. M. Zhou###
(648019, 648019)
 The Delta m<missing VAR>AFM<missing VAR> is proved to come fromthe interfacial uncompensated magnetic moment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Galvanomagnetic effects and manipulation of antiferromagnetic interfacial uncompensated magnetic moment in exchange-biased bilayers|X. Zhou,L. Ma,Z. Shi,W. J. Fan,R. F. L. Evans,R. W. Chantrell,S. Mangin,H. W. Zhang,S. M. Zhou###
(648084, 648084)
 We demonstrate that the exchangebias and rotational hysteresis are induced by the irreversible switching of theDelta m<missing VAR>AFM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Galvanomagnetic effects and manipulation of antiferromagnetic interfacial uncompensated magnetic moment in exchange-biased bilayers|X. Zhou,L. Ma,Z. Shi,W. J. Fan,R. F. L. Evans,R. W. Chantrell,S. Mangin,H. W. Zhang,S. M. Zhou###
(648088, 648088)
 In the training effect, the Delta m<missing VAR>AFM<missing VAR> changescontinuously.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Galvanomagnetic effects and manipulation of antiferromagnetic interfacial uncompensated magnetic moment in exchange-biased bilayers|X. Zhou,L. Ma,Z. Shi,W. J. Fan,R. F. L. Evans,R. W. Chantrell,S. Mangin,H. W. Zhang,S. M. Zhou###
(648103, 648103)
 In the training effect, the Delta m<missing VAR>AFM<missing VAR> changescontinuously.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Galvanomagnetic effects and manipulation of antiferromagnetic interfacial uncompensated magnetic moment in exchange-biased bilayers|X. Zhou,L. Ma,Z. Shi,W. J. Fan,R. F. L. Evans,R. W. Chantrell,S. Mangin,H. W. Zhang,S. M. Zhou###
(648132, 648132)
 This work highlights the fundamental role of the Delta m<missing VAR>AFM<missing VAR>in the exchange bias and facilitates the manipulation of antiferromagneticspintronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(SiP)
###Exchange-driven magnetoresistance in silicon facilitated by electrical spin injection|Yuichiro Ando,Lan Qing,Yang Song,Shinya Yamada,Kenji Kasahara,Kentarou Sawano,Masanobu Miyao,Hanan Dery,Kohei Hamaya###
(648218, 648221)
 We use electrical spin injection to probe exchange interactions in phosphorusdoped silicon (SiP).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 25, 'K', 2]

SiP
###Exchange-driven magnetoresistance in silicon facilitated by electrical spin injection|Yuichiro Ando,Lan Qing,Yang Song,Shinya Yamada,Kenji Kasahara,Kentarou Sawano,Masanobu Miyao,Hanan Dery,Kohei Hamaya###
(648282, 648283)
 The detection is enabled by a magnetoresistance effectthat demonstrates the efficiency of exchange in imprinting spin informationfrom the magnetic lead onto the localized moments in the SiP region.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 25, 'K', 1]

SiP
###Exchange-driven magnetoresistance in silicon facilitated by electrical spin injection|Yuichiro Ando,Lan Qing,Yang Song,Shinya Yamada,Kenji Kasahara,Kentarou Sawano,Masanobu Miyao,Hanan Dery,Kohei Hamaya###
(648364, 648365)
 It stems from spin-dependent scattering of electrons by neutralimpurities in SiP.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 25, 'K', 1]

Bi2Te3
###Resolving the Dirac Cone on the Surface of Bi2Te3 Topological Insulator Nanowires by Field-Effect Measurements|Johannes Gooth,Bacel Hamdou,August Dorn,Robert Zierold,Kornelius Nielsch###
(648676, 648679)
Resolving the Dirac Cone on the Surface of Bi2Te3 Topological Insulator Nanowires by Field-Effect Measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Te3
###Resolving the Dirac Cone on the Surface of Bi2Te3 Topological Insulator Nanowires by Field-Effect Measurements|Johannes Gooth,Bacel Hamdou,August Dorn,Robert Zierold,Kornelius Nielsch###
(648731, 648734)
 We validate the linear dispersion relation and resolve the Dirac cone on thesurface of a single Bi2Te3 nanowire via a combination of field-effect andmagnetoresistance measurements by which we unambiguously prove the topologicalinsulator nature of the nanowire surface states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Inelastic electron tunneling spectroscopy of local "spin accumulation" devices|Holly N. Tinkey,Pengke Li,Ian Appelbaum###
(648951, 648951)
 We investigate the origin of purported spin accumulation signals observedin local three-terminal (3T) measurements of ferromagnet/insulator/n<missing VAR>-Situnnel junctions using inelastic electron tunneling spectroscopy (IETS).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 3, 'T', 1]

I
###Inelastic electron tunneling spectroscopy of local "spin accumulation" devices|Holly N. Tinkey,Pengke Li,Ian Appelbaum###
(648969, 648969)
 We investigate the origin of purported spin accumulation signals observedin local three-terminal (3T) measurements of ferromagnet/insulator/n<missing VAR>-Situnnel junctions using inelastic electron tunneling spectroscopy (IETS).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 3, 'T', 1]

S
###Inelastic electron tunneling spectroscopy of local "spin accumulation" devices|Holly N. Tinkey,Pengke Li,Ian Appelbaum###
(648972, 648972)
 We investigate the origin of purported spin accumulation signals observedin local three-terminal (3T) measurements of ferromagnet/insulator/n<missing VAR>-Situnnel junctions using inelastic electron tunneling spectroscopy (IETS).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 3, 'T', 1]

I
###Inelastic electron tunneling spectroscopy of local "spin accumulation" devices|Holly N. Tinkey,Pengke Li,Ian Appelbaum###
(648993, 648993)
Voltage bias and magnetic field dependences of the IET spectra were found toaccount for the dominant contribution to 3T magnetoresistance signals, thusindicating that it arises from inelastic tunneling through impurities anddefects at junction interfaces and within the barrier, rather than from spinaccumulation due to pure elastic tunneling into bulk Si as has been previouslyassumed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 3, 'T', 0]

Si
###Inelastic electron tunneling spectroscopy of local "spin accumulation" devices|Holly N. Tinkey,Pengke Li,Ian Appelbaum###
(649090, 649090)
Voltage bias and magnetic field dependences of the IET spectra were found toaccount for the dominant contribution to 3T magnetoresistance signals, thusindicating that it arises from inelastic tunneling through impurities anddefects at junction interfaces and within the barrier, rather than from spinaccumulation due to pure elastic tunneling into bulk Si as has been previouslyassumed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 3, 'T', 0]

Mn
###Single atom anisotropic magnetoresistance on a topological insulator surface|Awadhesh Narayan,Ivan Rungger,Stefano Sanvito###
(649229, 649229)
 Our first-principles quantum transport calculationsbased on density functional theory for Mn on Bi2Se3 elucidate theunderlying mechanism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Se3
###Single atom anisotropic magnetoresistance on a topological insulator surface|Awadhesh Narayan,Ivan Rungger,Stefano Sanvito###
(649233, 649236)
 Our first-principles quantum transport calculationsbased on density functional theory for Mn on Bi2Se3 elucidate theunderlying mechanism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B2
###Room temperature write-read operations in antiferromagnetic memory|Takahiro Moriyama,Noriko Matsuzaki,Kab-Jin Kim,Ippei Suzuki,Tomoyasu Taniyama,Teruo Ono###
(649392, 649393)
 B2-ordered FeRh has been known to exhibit antiferromagnetic-ferromagnetic(AF-F) phase transitions in the vicinity of room temperature.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeRh
###Room temperature write-read operations in antiferromagnetic memory|Takahiro Moriyama,Noriko Matsuzaki,Kab-Jin Kim,Ippei Suzuki,Tomoyasu Taniyama,Teruo Ono###
(649397, 649398)
 B2-ordered FeRh has been known to exhibit antiferromagnetic-ferromagnetic(AF-F) phase transitions in the vicinity of room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Room temperature write-read operations in antiferromagnetic memory|Takahiro Moriyama,Noriko Matsuzaki,Kab-Jin Kim,Ippei Suzuki,Tomoyasu Taniyama,Teruo Ono###
(649417, 649417)
 B2-ordered FeRh has been known to exhibit antiferromagnetic-ferromagnetic(AF-F) phase transitions in the vicinity of room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Room temperature write-read operations in antiferromagnetic memory|Takahiro Moriyama,Noriko Matsuzaki,Kab-Jin Kim,Ippei Suzuki,Tomoyasu Taniyama,Teruo Ono###
(649419, 649419)
 B2-ordered FeRh has been known to exhibit antiferromagnetic-ferromagnetic(AF-F) phase transitions in the vicinity of room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Room temperature write-read operations in antiferromagnetic memory|Takahiro Moriyama,Noriko Matsuzaki,Kab-Jin Kim,Ippei Suzuki,Tomoyasu Taniyama,Teruo Ono###
(649446, 649446)
 Manipulation ofthe Neel order via AF-F phase transition and recent experimental observationof the anisotropic magnetoresistance in antiferromagnetic FeRh has proven thatFeRh is a promising candidate for antiferromagnetic memory material.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Room temperature write-read operations in antiferromagnetic memory|Takahiro Moriyama,Noriko Matsuzaki,Kab-Jin Kim,Ippei Suzuki,Tomoyasu Taniyama,Teruo Ono###
(649454, 649454)
 Manipulation ofthe Neel order via AF-F phase transition and recent experimental observationof the anisotropic magnetoresistance in antiferromagnetic FeRh has proven thatFeRh is a promising candidate for antiferromagnetic memory material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Room temperature write-read operations in antiferromagnetic memory|Takahiro Moriyama,Noriko Matsuzaki,Kab-Jin Kim,Ippei Suzuki,Tomoyasu Taniyama,Teruo Ono###
(649456, 649456)
 Manipulation ofthe Neel order via AF-F phase transition and recent experimental observationof the anisotropic magnetoresistance in antiferromagnetic FeRh has proven thatFeRh is a promising candidate for antiferromagnetic memory material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeRh
###Room temperature write-read operations in antiferromagnetic memory|Takahiro Moriyama,Noriko Matsuzaki,Kab-Jin Kim,Ippei Suzuki,Tomoyasu Taniyama,Teruo Ono###
(649483, 649484)
 Manipulation ofthe Neel order via AF-F phase transition and recent experimental observationof the anisotropic magnetoresistance in antiferromagnetic FeRh has proven thatFeRh is a promising candidate for antiferromagnetic memory material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeRh
###Room temperature write-read operations in antiferromagnetic memory|Takahiro Moriyama,Noriko Matsuzaki,Kab-Jin Kim,Ippei Suzuki,Tomoyasu Taniyama,Teruo Ono###
(649493, 649494)
 Manipulation ofthe Neel order via AF-F phase transition and recent experimental observationof the anisotropic magnetoresistance in antiferromagnetic FeRh has proven thatFeRh is a promising candidate for antiferromagnetic memory material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Room temperature write-read operations in antiferromagnetic memory|Takahiro Moriyama,Noriko Matsuzaki,Kab-Jin Kim,Ippei Suzuki,Tomoyasu Taniyama,Teruo Ono###
(649513, 649513)
 In thiswork, we demonstrate sequential write and read operations in antiferromagneticmemory resistors made of B2-orderd FeRh thin films by a magnetic field andelectric current only.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B2
###Room temperature write-read operations in antiferromagnetic memory|Takahiro Moriyama,Noriko Matsuzaki,Kab-Jin Kim,Ippei Suzuki,Tomoyasu Taniyama,Teruo Ono###
(649548, 649549)
 In thiswork, we demonstrate sequential write and read operations in antiferromagneticmemory resistors made of B2-orderd FeRh thin films by a magnetic field andelectric current only.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeRh
###Room temperature write-read operations in antiferromagnetic memory|Takahiro Moriyama,Noriko Matsuzaki,Kab-Jin Kim,Ippei Suzuki,Tomoyasu Taniyama,Teruo Ono###
(649553, 649554)
 In thiswork, we demonstrate sequential write and read operations in antiferromagneticmemory resistors made of B2-orderd FeRh thin films by a magnetic field andelectric current only.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Studying angle-dependent magnetoresistance oscillations of cuprate superconductors in a model with antiferromagnetic reconstruction and magnetic breakdown|Sylvia K. Lewin,James G. Analytis###
(649678, 649678)
 We calculate angle-dependent magnetoresistance oscillations (AMRO) forinterlayer transport of cuprate superconductors in the presence of (pi,pi)order.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Studying angle-dependent magnetoresistance oscillations of cuprate superconductors in a model with antiferromagnetic reconstruction and magnetic breakdown|Sylvia K. Lewin,James G. Analytis###
(649853, 649853)
 This work paves the way for the use of AMRO as a tool to distinguishdifferent kinds of ordered states.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZrSiS
###Evidence of both surface and bulk Dirac bands in ZrSiS and the unconventional magnetoresistance|Xuefeng Wang,Xingchen Pan,Ming Gao,Jihai Yu,Juan Jiang,Junran Zhang,Huakun Zuo,Minhao Zhang,Zhongxia Wei,Wei Niu,Zhengcai Xia,Xiangang Wan,Yulin Chen,Fengqi Song,Yongbing Xu,Baigeng Wang,Guanghou Wang,Rong Zhang###
(650133, 650135)
Evidence of both surface and bulk Dirac bands in ZrSiS and the unconventional magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 53, 'T', 1],[125.0, 20, 'T', 2]

ZrSiS
###Evidence of both surface and bulk Dirac bands in ZrSiS and the unconventional magnetoresistance|Xuefeng Wang,Xingchen Pan,Ming Gao,Jihai Yu,Juan Jiang,Junran Zhang,Huakun Zuo,Minhao Zhang,Zhongxia Wei,Wei Niu,Zhengcai Xia,Xiangang Wan,Yulin Chen,Fengqi Song,Yongbing Xu,Baigeng Wang,Guanghou Wang,Rong Zhang###
(650154, 650156)
 The unconventional magnetoresistance of ZrSiS single crystals is foundunsaturated till the magnetic field of 53 T with the butterfly shaped angulardependence.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 53, 'T', 0],[104.0, 20, 'T', 1]

ZrSiS
###Evidence of both surface and bulk Dirac bands in ZrSiS and the unconventional magnetoresistance|Xuefeng Wang,Xingchen Pan,Ming Gao,Jihai Yu,Juan Jiang,Junran Zhang,Huakun Zuo,Minhao Zhang,Zhongxia Wei,Wei Niu,Zhengcai Xia,Xiangang Wan,Yulin Chen,Fengqi Song,Yongbing Xu,Baigeng Wang,Guanghou Wang,Rong Zhang###
(650326, 650328)
 By integrating thedensity functional theory calculations, ZrSiS is suggested to be a Diracmaterial with both surface and bulk Dirac bands.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 53, 'T', 3],[66.0, 20, 'T', 2]

LaAlO3/SrTiO3
###High field magneto-transport in two-dimensional electron gas LaAlO3/SrTiO3|Ming Yang,Mathieu Pierre,Olivier Toressin,Michel Goiran,Walter Escoffier,Shengwei Zeng,Zhen Huang,Han Kun,Thirumalai Venkatesan,Ariando,Michael Coey###
(650386, 650394)
High field magneto-transport in two-dimensional electron gas LaAlO3/SrTiO3.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

LaAlO3/SrTiO3
###High field magneto-transport in two-dimensional electron gas LaAlO3/SrTiO3|Ming Yang,Mathieu Pierre,Olivier Toressin,Michel Goiran,Walter Escoffier,Shengwei Zeng,Zhen Huang,Han Kun,Thirumalai Venkatesan,Ariando,Michael Coey###
(650409, 650417)
 Transport properties of the complex oxide LaAlO3/SrTiO3 interface areinvestigated under high magnetic field (55T).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

LiF/EuS
###Resonant TMR inversion in LiF/EuS based spin-filter tunnel junctions|Fen Liu,Yihang Yang,Qian Xue,Zhiwei Gao,Aixi Chen,Guo-Xing Miao###
(650659, 650663)
Resonant TMR inversion in LiF/EuS based spin-filter tunnel junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[165.0, 16, '%', 4]

CoFe/LiF/EuS/Ti
###Resonant TMR inversion in LiF/EuS based spin-filter tunnel junctions|Fen Liu,Yihang Yang,Qian Xue,Zhiwei Gao,Aixi Chen,Guo-Xing Miao###
(650731, 650740)
 Wefabricated hybrid magnetic tunnel junctions of CoFe/LiF/EuS/Ti, with anepitaxial LiF energy barrier joined with a polycrystalline EuS spin-filterbar-rier.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[88.0, 16, '%', 2]

LiF
###Resonant TMR inversion in LiF/EuS based spin-filter tunnel junctions|Fen Liu,Yihang Yang,Qian Xue,Zhiwei Gao,Aixi Chen,Guo-Xing Miao###
(650750, 650751)
 Wefabricated hybrid magnetic tunnel junctions of CoFe/LiF/EuS/Ti, with anepitaxial LiF energy barrier joined with a polycrystalline EuS spin-filterbar-rier.
Featurization terminated normally.
0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 16, '%', 2]

EuS
###Resonant TMR inversion in LiF/EuS based spin-filter tunnel junctions|Fen Liu,Yihang Yang,Qian Xue,Zhiwei Gao,Aixi Chen,Guo-Xing Miao###
(650765, 650766)
 Wefabricated hybrid magnetic tunnel junctions of CoFe/LiF/EuS/Ti, with anepitaxial LiF energy barrier joined with a polycrystalline EuS spin-filterbar-rier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 16, '%', 2]

LiF
###Resonant TMR inversion in LiF/EuS based spin-filter tunnel junctions|Fen Liu,Yihang Yang,Qian Xue,Zhiwei Gao,Aixi Chen,Guo-Xing Miao###
(650790, 650791)
 Due to the water solubility of LiF, the devices were fully packagedin situ.
Featurization terminated normally.
0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 16, '%', 1]

LiF
###Resonant TMR inversion in LiF/EuS based spin-filter tunnel junctions|Fen Liu,Yihang Yang,Qian Xue,Zhiwei Gao,Aixi Chen,Guo-Xing Miao###
(650880, 650881)
 The TMR inversiondepends sensitively on the thickness of LiF, and the tendency of inversiondisap-pears when LiF gets thick enough and recovers its intrinsic properties.
Featurization terminated normally.
0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 16, '%', 1]

LiF
###Resonant TMR inversion in LiF/EuS based spin-filter tunnel junctions|Fen Liu,Yihang Yang,Qian Xue,Zhiwei Gao,Aixi Chen,Guo-Xing Miao###
(650901, 650902)
 The TMR inversiondepends sensitively on the thickness of LiF, and the tendency of inversiondisap-pears when LiF gets thick enough and recovers its intrinsic properties.
Featurization terminated normally.
0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 16, '%', 1]

In
###Hydrodynamic theory of thermoelectric transport and negative magnetoresistance in Weyl semimetals|Andrew Lucas,Richard A. Davison,Subir Sachdev###
(651086, 651086)
 Inaddition to the usual axial anomaly, we account for the effects of a distinct,axial-gravitational anomaly expected to be present in Weyl semimetals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###High-Speed Magnetoresistive Random-Access Memory Random Number Generator Using Error-Correcting Code|Tetsufumi Tanamoto,Naoharu Shimomura,Sumio Ikegawa,Mari Matsumoto,Shinobu Fujita,Hiroaki Yoda###
(651272, 651272)
 A high-speed random number generator (RNG) circuit based on magnetoresistiverandom-access memory (MRAM) using an error-correcting code (E<missing VAR>CC) postprocessing circuit is presented.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CC
###High-Speed Magnetoresistive Random-Access Memory Random Number Generator Using Error-Correcting Code|Tetsufumi Tanamoto,Naoharu Shimomura,Sumio Ikegawa,Mari Matsumoto,Shinobu Fujita,Hiroaki Yoda###
(651288, 651289)
 E<missing VAR>CC post processing increases the quality ofrandomness by increasing the entropy of random number.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CC
###High-Speed Magnetoresistive Random-Access Memory Random Number Generator Using Error-Correcting Code|Tetsufumi Tanamoto,Naoharu Shimomura,Sumio Ikegawa,Mari Matsumoto,Shinobu Fujita,Hiroaki Yoda###
(651368, 651369)
 It is shown that the E<missing VAR>CC post processing circuit powerfullyimproves the quality of randomness with minimum overhead, ending up withhigh-speed random number generation.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Be
###Influence of nonequilibrium phonons on the amplitude of magnetoquantum oscillations in the point-contact resistance|N. L. Bobrov,J. A. Kokkedee,N. N. Gribov,I. K. Yanson,A. G. M. Jansen###
(651956, 651956)
 For metallic point contacts with Be and Al the magnetoquantum oscillations inthe contact resistance have been investigated as a function of the appliedvoltage over the contact.
Featurization terminated normally.
0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Al
###Influence of nonequilibrium phonons on the amplitude of magnetoquantum oscillations in the point-contact resistance|N. L. Bobrov,J. A. Kokkedee,N. N. Gribov,I. K. Yanson,A. G. M. Jansen###
(651960, 651960)
 For metallic point contacts with Be and Al the magnetoquantum oscillations inthe contact resistance have been investigated as a function of the appliedvoltage over the contact.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Li
###Spin-filter effect at the interface of magnetic/non-magnetic homojunctions in Li doped ZnO nanostructures|L. Botsch,I. Lorite,Y. Kumar,P. Esquinazi,T. Michalsky,J. Zajadacz,K. Zimmer###
(652205, 652205)
Spin-filter effect at the interface of magnetic/non-magnetic homojunctions in Li doped ZnO nanostructures.
Featurization terminated normally.
0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZnO
###Spin-filter effect at the interface of magnetic/non-magnetic homojunctions in Li doped ZnO nanostructures|L. Botsch,I. Lorite,Y. Kumar,P. Esquinazi,T. Michalsky,J. Zajadacz,K. Zimmer###
(652209, 652210)
Spin-filter effect at the interface of magnetic/non-magnetic homojunctions in Li doped ZnO nanostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Li
###Spin-filter effect at the interface of magnetic/non-magnetic homojunctions in Li doped ZnO nanostructures|L. Botsch,I. Lorite,Y. Kumar,P. Esquinazi,T. Michalsky,J. Zajadacz,K. Zimmer###
(652345, 652345)
 This device isbased on a spin-filter phenomenon we discovered at the interfaces betweendefect-induced magnetic and non-magnetic regions, produced at the surface of aLi doped ZnO microwire by low-energy proton implantation.
Featurization terminated normally.
0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZnO
###Spin-filter effect at the interface of magnetic/non-magnetic homojunctions in Li doped ZnO nanostructures|L. Botsch,I. Lorite,Y. Kumar,P. Esquinazi,T. Michalsky,J. Zajadacz,K. Zimmer###
(652349, 652350)
 This device isbased on a spin-filter phenomenon we discovered at the interfaces betweendefect-induced magnetic and non-magnetic regions, produced at the surface of aLi doped ZnO microwire by low-energy proton implantation.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Spin-filter effect at the interface of magnetic/non-magnetic homojunctions in Li doped ZnO nanostructures|L. Botsch,I. Lorite,Y. Kumar,P. Esquinazi,T. Michalsky,J. Zajadacz,K. Zimmer###
(652377, 652377)
 Positivemagnetoresistance is observed at 300K and scales with the number of interfacesintroduced along the wire.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Origin of threshold current density for asymmetric magnetoresistance in Pt/Py bilayers|Tian Li,Sanghoon Kim,Seung-Jae Lee,Seo-Won Lee,Tomohiro Koyama,Daichi Chiba,Takahiro Moriyama,Kyung-Jin Lee,Kab-Jin Kim,Teruo Ono###
(652429, 652429)
Origin of threshold current density for asymmetric magnetoresistance in Pt/Py bilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Origin of threshold current density for asymmetric magnetoresistance in Pt/Py bilayers|Tian Li,Sanghoon Kim,Seung-Jae Lee,Seo-Won Lee,Tomohiro Koyama,Daichi Chiba,Takahiro Moriyama,Kyung-Jin Lee,Kab-Jin Kim,Teruo Ono###
(652455, 652455)
 An asymmetric magnetoresistance (MR) is investigated in Py/Pt bilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Al2O3/SrTiO3
###Anisotropic electronic transport of the two-dimensional electron system in Al2O3/SrTiO3 heterostructures|K. Wolff,R. Schäfer,M. Meffert,D. Gerthsen,R. Schneider,D. Fuchs###
(652663, 652671)
Anisotropic electronic transport of the two-dimensional electron system in Al2O3/SrTiO3 heterostructures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[51.0, 30, 'K', 1]

Al2O3
###Anisotropic electronic transport of the two-dimensional electron system in Al2O3/SrTiO3 heterostructures|K. Wolff,R. Schäfer,M. Meffert,D. Gerthsen,R. Schneider,D. Fuchs###
(652694, 652697)
 Transport measurements on the two dimensional electron system in Al2O3 SrTiO3heterostructures indicate significant noncrystalline anisotropic behavior belowT<missing VAR>  30 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 30, 'K', 0]

SrTiO3
###Anisotropic electronic transport of the two-dimensional electron system in Al2O3/SrTiO3 heterostructures|K. Wolff,R. Schäfer,M. Meffert,D. Gerthsen,R. Schneider,D. Fuchs###
(652699, 652702)
 Transport measurements on the two dimensional electron system in Al2O3 SrTiO3heterostructures indicate significant noncrystalline anisotropic behavior belowT<missing VAR>  30 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 30, 'K', 0]

SrTiO3
###Anisotropic electronic transport of the two-dimensional electron system in Al2O3/SrTiO3 heterostructures|K. Wolff,R. Schäfer,M. Meffert,D. Gerthsen,R. Schneider,D. Fuchs###
(652731, 652734)
 Lattice dislocations in SrTiO3 and interfacial steps are suggested tobe the main sources for electronic anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 30, 'K', 1]

LaAlO3
###Anisotropic electronic transport of the two-dimensional electron system in Al2O3/SrTiO3 heterostructures|K. Wolff,R. Schäfer,M. Meffert,D. Gerthsen,R. Schneider,D. Fuchs###
(652889, 652892)
 Compared to LaAlO3 SrTiO3, Rashba coupling seems to be reducedindicating a weaker polarity in Al2O3 SrTiO3 heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 30, 'K', 4]

SrTiO3
###Anisotropic electronic transport of the two-dimensional electron system in Al2O3/SrTiO3 heterostructures|K. Wolff,R. Schäfer,M. Meffert,D. Gerthsen,R. Schneider,D. Fuchs###
(652894, 652897)
 Compared to LaAlO3 SrTiO3, Rashba coupling seems to be reducedindicating a weaker polarity in Al2O3 SrTiO3 heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[172.0, 30, 'K', 4]

Al2O3
###Anisotropic electronic transport of the two-dimensional electron system in Al2O3/SrTiO3 heterostructures|K. Wolff,R. Schäfer,M. Meffert,D. Gerthsen,R. Schneider,D. Fuchs###
(652923, 652926)
 Compared to LaAlO3 SrTiO3, Rashba coupling seems to be reducedindicating a weaker polarity in Al2O3 SrTiO3 heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[201.0, 30, 'K', 4]

SrTiO3
###Anisotropic electronic transport of the two-dimensional electron system in Al2O3/SrTiO3 heterostructures|K. Wolff,R. Schäfer,M. Meffert,D. Gerthsen,R. Schneider,D. Fuchs###
(652928, 652931)
 Compared to LaAlO3 SrTiO3, Rashba coupling seems to be reducedindicating a weaker polarity in Al2O3 SrTiO3 heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[206.0, 30, 'K', 4]

NiC2
###Magnetism and charge density waves in RNiC$_2$ (R = Ce, Pr, Nd)|Kamil K. Kolincio,Marta Roman,Michał J. Winiarski,Judyta Strychalska - Nowak,Tomasz Klimczuk###
(652957, 652959)
Magnetism and charge density waves in R<missing VAR>NiC2 (R<missing VAR>  Ce, Pr, Nd).
Featurization terminated normally.
0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ce
###Magnetism and charge density waves in RNiC$_2$ (R = Ce, Pr, Nd)|Kamil K. Kolincio,Marta Roman,Michał J. Winiarski,Judyta Strychalska - Nowak,Tomasz Klimczuk###
(652965, 652965)
Magnetism and charge density waves in R<missing VAR>NiC2 (R<missing VAR>  Ce, Pr, Nd).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pr
###Magnetism and charge density waves in RNiC$_2$ (R = Ce, Pr, Nd)|Kamil K. Kolincio,Marta Roman,Michał J. Winiarski,Judyta Strychalska - Nowak,Tomasz Klimczuk###
(652968, 652968)
Magnetism and charge density waves in R<missing VAR>NiC2 (R<missing VAR>  Ce, Pr, Nd).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nd
###Magnetism and charge density waves in RNiC$_2$ (R = Ce, Pr, Nd)|Kamil K. Kolincio,Marta Roman,Michał J. Winiarski,Judyta Strychalska - Nowak,Tomasz Klimczuk###
(652971, 652971)
Magnetism and charge density waves in R<missing VAR>NiC2 (R<missing VAR>  Ce, Pr, Nd).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CeNiC2
###Magnetism and charge density waves in RNiC$_2$ (R = Ce, Pr, Nd)|Kamil K. Kolincio,Marta Roman,Michał J. Winiarski,Judyta Strychalska - Nowak,Tomasz Klimczuk###
(653002, 653005)
 We have compared the magnetic, transport, galvanomagnetic and specific heatproperties of CeNiC2, PrNiC2 and NdNiC2 to study the interplay betweencharge density waves and magnetism in these compounds.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PrNiC2
###Magnetism and charge density waves in RNiC$_2$ (R = Ce, Pr, Nd)|Kamil K. Kolincio,Marta Roman,Michał J. Winiarski,Judyta Strychalska - Nowak,Tomasz Klimczuk###
(653008, 653011)
 We have compared the magnetic, transport, galvanomagnetic and specific heatproperties of CeNiC2, PrNiC2 and NdNiC2 to study the interplay betweencharge density waves and magnetism in these compounds.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NdNiC2
###Magnetism and charge density waves in RNiC$_2$ (R = Ce, Pr, Nd)|Kamil K. Kolincio,Marta Roman,Michał J. Winiarski,Judyta Strychalska - Nowak,Tomasz Klimczuk###
(653015, 653018)
 We have compared the magnetic, transport, galvanomagnetic and specific heatproperties of CeNiC2, PrNiC2 and NdNiC2 to study the interplay betweencharge density waves and magnetism in these compounds.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NdNiC2
###Magnetism and charge density waves in RNiC$_2$ (R = Ce, Pr, Nd)|Kamil K. Kolincio,Marta Roman,Michał J. Winiarski,Judyta Strychalska - Nowak,Tomasz Klimczuk###
(653057, 653060)
 The negativemagnetoresistance in NdNiC2 is discussed in terms of the partial destructionof charge density waves and an irreversible phase transition stabilized by thefield induced ferromagnetic transformation is reported.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PrNiC2
###Magnetism and charge density waves in RNiC$_2$ (R = Ce, Pr, Nd)|Kamil K. Kolincio,Marta Roman,Michał J. Winiarski,Judyta Strychalska - Nowak,Tomasz Klimczuk###
(653119, 653122)
 For PrNiC2 wedemonstrate that the magnetic field initially weakens the CD<missing VAR>W state, due to theZeeman splitting of conduction bands.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Magnetism and charge density waves in RNiC$_2$ (R = Ce, Pr, Nd)|Kamil K. Kolincio,Marta Roman,Michał J. Winiarski,Judyta Strychalska - Nowak,Tomasz Klimczuk###
(653143, 653143)
 For PrNiC2 wedemonstrate that the magnetic field initially weakens the CD<missing VAR>W state, due to theZeeman splitting of conduction bands.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Magnetism and charge density waves in RNiC$_2$ (R = Ce, Pr, Nd)|Kamil K. Kolincio,Marta Roman,Michał J. Winiarski,Judyta Strychalska - Nowak,Tomasz Klimczuk###
(653145, 653145)
 For PrNiC2 wedemonstrate that the magnetic field initially weakens the CD<missing VAR>W state, due to theZeeman splitting of conduction bands.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaSb
###Pressure-induced topological phase transition in LaSb: First-principles study|Peng-Jie Guo,Huan-Cheng Yang,Kai Liu,Zhong-Yi Lu###
(653221, 653222)
Pressure-induced topological phase transition in LaSb First-principles study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 3, 'and', 1],[80.0, 4, 'GPa', 1]

LaSb
###Pressure-induced topological phase transition in LaSb: First-principles study|Peng-Jie Guo,Huan-Cheng Yang,Kai Liu,Zhong-Yi Lu###
(653267, 653268)
 By using first-principles electronic structure calculations, we predict thatthe extreme magnetoresistance (XMR) material LaSb takes a topological phasetransition without breaking any symmetry under a hydrostatic pressure appliedbetween 3 and 4 GPa, meanwhile the electron-hole compensation remains in itselectronic band structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 3, 'and', 0],[34.0, 4, 'GPa', 0]

LaSb
###Pressure-induced topological phase transition in LaSb: First-principles study|Peng-Jie Guo,Huan-Cheng Yang,Kai Liu,Zhong-Yi Lu###
(653331, 653332)
 Thus LaSb provides an ideal platform for studyingthe individual role of topological property playing in the XMR phenomenon, inaddition to the electron-hole compensation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 3, 'and', 1],[29.0, 4, 'GPa', 1]

SrAs3
###Evidence for a Dirac nodal-line semimetal in SrAs$_{3}$|Shichao Li,Zhaopeng Guo,Dongzhi Fu,Xing-Chen Pan,Jinghui Wang,Kejing Ran,Song Bao,Zhen Ma,Zhengwei Cai,Rui Wang,Rui Yu,Jian Sun,Fengqi Song,Jinsheng Wen###
(653448, 653450)
Evidence for a Dirac nodal-line semimetal in SrAs3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrAs3
###Evidence for a Dirac nodal-line semimetal in SrAs$_{3}$|Shichao Li,Zhaopeng Guo,Dongzhi Fu,Xing-Chen Pan,Jinghui Wang,Kejing Ran,Song Bao,Zhen Ma,Zhengwei Cai,Rui Wang,Rui Yu,Jian Sun,Fengqi Song,Jinsheng Wen###
(653555, 653557)
 Here, by carrying outmagnetotransport measurements and performing first-principle calculations, wedemonstrate that such a state has been realized in high-quality single crystalsof SrAs3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiBi3
###Singlet superconductivity in single-crystal NiBi3 superconductor|G. J. Zhao,X. X. Gong,P. C. Xu,B. C. Li,Z. Y. Huang,X F. Jin,X. D. Zhu,T. Y. Chen###
(653679, 653681)
Singlet superconductivity in single-crystal NiBi3 superconductor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 2, 'Delta', 5]

NiBi3
###Singlet superconductivity in single-crystal NiBi3 superconductor|G. J. Zhao,X. X. Gong,P. C. Xu,B. C. Li,Z. Y. Huang,X F. Jin,X. D. Zhu,T. Y. Chen###
(653728, 653730)
 Andreev reflection spectroscopy with unpolarized and highly spin-polarizedcurrents has been utilized to study an intermetallic single-crystalsuperconductor NiBi3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 2, 'Delta', 4]

NiBi3
###Singlet superconductivity in single-crystal NiBi3 superconductor|G. J. Zhao,X. X. Gong,P. C. Xu,B. C. Li,Z. Y. Huang,X F. Jin,X. D. Zhu,T. Y. Chen###
(653825, 653827)
 The spin state inthe NiBi3 sample is determined to be antiparallel using a highly spin-polarizedcurrent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 2, 'Delta', 1]

NiBi3
###Singlet superconductivity in single-crystal NiBi3 superconductor|G. J. Zhao,X. X. Gong,P. C. Xu,B. C. Li,Z. Y. Huang,X F. Jin,X. D. Zhu,T. Y. Chen###
(653901, 653903)
 The gap value 2Delta/kBT, gap symmetry and its temperature dependence,combined with the antiparallel spin state show that the bulk NiBi3 is a singlets<missing VAR>-wave superconductor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 2, 'Delta', 0]

In
###Theory of Cross-correlated Electron-Magnon Transport Phenomena: Case of Magnetic Topological Insulator|Yusuke Imai,Hiroshi Kohno###
(654134, 654134)
 Inthe insulating state, the thermal AMR is realized as a magnonic analog of AMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFe
###Giant anisotropy of Gilbert damping in epitaxial CoFe films|Yi Li,Fanlong Zeng,Steven S. -L. Zhang,Hyeondeok Shin,Hilal Saglam,Vedat Karakas,Ozhan Ozatay,John E. Pearson,Olle G. Heinonen,Yizheng Wu,Axel Hoffmann,Wei Zhang###
(654193, 654194)
Giant anisotropy of Gilbert damping in epitaxial CoFe films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co50Fe50
###Giant anisotropy of Gilbert damping in epitaxial CoFe films|Yi Li,Fanlong Zeng,Steven S. -L. Zhang,Hyeondeok Shin,Hilal Saglam,Vedat Karakas,Ozhan Ozatay,John E. Pearson,Olle G. Heinonen,Yizheng Wu,Axel Hoffmann,Wei Zhang###
(654256, 654259)
 Here we report a giant Gilbertdamping anisotropy in epitaxial Co50Fe50 thin film with amaximum-minimum damping ratio of 400 %, determined by broadband spin-torque aswell as inductive ferromagnetic resonance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co50Fe50
###Giant anisotropy of Gilbert damping in epitaxial CoFe films|Yi Li,Fanlong Zeng,Steven S. -L. Zhang,Hyeondeok Shin,Hilal Saglam,Vedat Karakas,Ozhan Ozatay,John E. Pearson,Olle G. Heinonen,Yizheng Wu,Axel Hoffmann,Wei Zhang###
(654387, 654390)
 We conclude that the origin of thisdamping anisotropy is the variation of the spin orbit coupling for differentmagnetization orientations in the cubic lattice, which is further corroboratefrom the magnitude of the anisotropic magnetoresistance in Co50Fe50.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

AuTe2Br
###Highly Mobile Carriers in a Candidate of Quasi-Two-Dimensional Topological Semimetal AuTe$_2$Br|Zeji Wang,Shuyu Cheng,Tay-Rong Chang,Wenlong Ma,Xitong Xu,Huibin Zhou,Guangqiang Wang,Xin Gui,Haipeng Zhu,Zhen Zhu,Hao Zheng,Jinfeng Jia,Junfeng Wang,Weiwei Xie,Shuang Jia###
(654705, 654708)
Highly Mobile Carriers in a Candidate of Quasi-Two-Dimensional Topological Semimetal AuTe2Br.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 2, 'D', 2],[245.0, 58, 'T', 4]

AuTe2Br
###Highly Mobile Carriers in a Candidate of Quasi-Two-Dimensional Topological Semimetal AuTe$_2$Br|Zeji Wang,Shuyu Cheng,Tay-Rong Chang,Wenlong Ma,Xitong Xu,Huibin Zhou,Guangqiang Wang,Xin Gui,Haipeng Zhu,Zhen Zhu,Hao Zheng,Jinfeng Jia,Junfeng Wang,Weiwei Xie,Shuang Jia###
(654754, 654757)
 We report the crystal and electronic structures of a non-centrosymmetricquasi-two-dimensional (2D), candidate of topological semimetal AuTe2Br.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 2, 'D', 1],[196.0, 58, 'T', 3]

V
###Highly Mobile Carriers in a Candidate of Quasi-Two-Dimensional Topological Semimetal AuTe$_2$Br|Zeji Wang,Shuyu Cheng,Tay-Rong Chang,Wenlong Ma,Xitong Xu,Huibin Zhou,Guangqiang Wang,Xin Gui,Haipeng Zhu,Zhen Zhu,Hao Zheng,Jinfeng Jia,Junfeng Wang,Weiwei Xie,Shuang Jia###
(654880, 654880)
 Our transport measurements on the single crystals show highlyanisotropic, compensated low-density electrons and holes, both of which exhibitultrahigh mobility at a level of 105cm2V-1s<missing VAR>-1 at low temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 2, 'D', 1],[73.0, 58, 'T', 1]

AuTe2Br
###Highly Mobile Carriers in a Candidate of Quasi-Two-Dimensional Topological Semimetal AuTe$_2$Br|Zeji Wang,Shuyu Cheng,Tay-Rong Chang,Wenlong Ma,Xitong Xu,Huibin Zhou,Guangqiang Wang,Xin Gui,Haipeng Zhu,Zhen Zhu,Hao Zheng,Jinfeng Jia,Junfeng Wang,Weiwei Xie,Shuang Jia###
(654936, 654939)
 Thehighly mobile, compensated carriers lead a non-saturated, parabolicmagnetoresistance as large as 3105 in single-crystalline AuTe2Br in amagnetic field up to 58 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 2, 'D', 2],[14.0, 58, 'T', 0]

In
###Optimizing magnetoresistive sensor signal-to-noise via pinning field tuning|J. Moulin,A. Doll,E. Paul,M. Pannetier-Lecoeur,C. Fermon,N. Sergeeva-Chollet,A. Solignac###
(655021, 655021)
 In this paper, differentways of stabilizing the magnetic sensing layer to suppress magnetic noise areinvestigated by applying a pinning field, either by an external field,internally in the stack or by shape anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TaSe3
###Large Magnetoresistance in Topological Insulator Candidate TaSe3|Yong Zhang,Tongshuai Zhu,Haijun Bu,Zixiu Cai,Chuanying Xi,Bo Chen,Boyuan Wei,Dongjing Lin,Hangkai Xie,Muhammad Naveed,Xiaoxiang Xi,Fucong Fei,Haijun Zhang,Fengqi Song###
(655722, 655724)
Large Magnetoresistance in Topological Insulator Candidate TaSe3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 1000, '%', 1],[177.0, 0.9, 'at', 3],[181.0, 20, 'K', 3]

TaSe3
###Large Magnetoresistance in Topological Insulator Candidate TaSe3|Yong Zhang,Tongshuai Zhu,Haijun Bu,Zixiu Cai,Chuanying Xi,Bo Chen,Boyuan Wei,Dongjing Lin,Hangkai Xie,Muhammad Naveed,Xiaoxiang Xi,Fucong Fei,Haijun Zhang,Fengqi Song###
(655761, 655763)
 Large unsaturated magnetoresistance (XMR) with magnitude about 1000% isobserved in topological insulator candidate TaSe3 from our high field (up to 38T) measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 1000, '%', 0],[138.0, 0.9, 'at', 2],[142.0, 20, 'K', 2]

H
###Large Magnetoresistance in Topological Insulator Candidate TaSe3|Yong Zhang,Tongshuai Zhu,Haijun Bu,Zixiu Cai,Chuanying Xi,Bo Chen,Boyuan Wei,Dongjing Lin,Hangkai Xie,Muhammad Naveed,Xiaoxiang Xi,Fucong Fei,Haijun Zhang,Fengqi Song###
(655840, 655840)
 Two oscillation modes, associated with one hole pocket and twoelectron pockets in the bulk, respectively, are detected from our Shubnikov-deHass (SdH) measurements, consistent with our first-principles calculations.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 1000, '%', 1],[61.0, 0.9, 'at', 1],[65.0, 20, 'K', 1]

TaSe3
###Large Magnetoresistance in Topological Insulator Candidate TaSe3|Yong Zhang,Tongshuai Zhu,Haijun Bu,Zixiu Cai,Chuanying Xi,Bo Chen,Boyuan Wei,Dongjing Lin,Hangkai Xie,Muhammad Naveed,Xiaoxiang Xi,Fucong Fei,Haijun Zhang,Fengqi Song###
(655934, 655936)
With the detailed Hall measurements performed, our two-band model analysisexhibits an imperfect density ratio nh/ne closing 0.9 at T<missing VAR>< 20 K , whichsuggests that the carrier compensations account for the XMR in TaSe3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[189.0, 1000, '%', 2],[33.0, 0.9, 'at', 0],[29.0, 20, 'K', 0]

I
###Highly Tunable Spin-Orbit Torque and Anisotropic Magnetoresistance in a Topological Insulator Thin Film Attached to Ferromagnetic Layer|Ali G. Moghaddam,Alireza Qaiumzadeh,Anna Dyrdał,Jamal Berakdar###
(656011, 656011)
 We investigate spin-charge conversion phenomena in hybrid structures oftopological insulator (T<missing VAR>I) thin films and magnetic insulators.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

IS
###Highly Tunable Spin-Orbit Torque and Anisotropic Magnetoresistance in a Topological Insulator Thin Film Attached to Ferromagnetic Layer|Ali G. Moghaddam,Alireza Qaiumzadeh,Anna Dyrdał,Jamal Berakdar###
(656043, 656044)
 We find ananisotropic inverse spin-galvanic effect (ISGE) that yields a highly tunablespin-orbit torque (SOT).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Highly Tunable Spin-Orbit Torque and Anisotropic Magnetoresistance in a Topological Insulator Thin Film Attached to Ferromagnetic Layer|Ali G. Moghaddam,Alireza Qaiumzadeh,Anna Dyrdał,Jamal Berakdar###
(656067, 656068)
 We find ananisotropic inverse spin-galvanic effect (ISGE) that yields a highly tunablespin-orbit torque (SOT).
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

IS
###Highly Tunable Spin-Orbit Torque and Anisotropic Magnetoresistance in a Topological Insulator Thin Film Attached to Ferromagnetic Layer|Ali G. Moghaddam,Alireza Qaiumzadeh,Anna Dyrdał,Jamal Berakdar###
(656175, 656176)
 Both the ISGE and AMR exhibit a strong dependence on themagnetization and the Fermi level position and can be utilized for spintronicsand SOT<missing VAR>-based applications at the nanoscale.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Highly Tunable Spin-Orbit Torque and Anisotropic Magnetoresistance in a Topological Insulator Thin Film Attached to Ferromagnetic Layer|Ali G. Moghaddam,Alireza Qaiumzadeh,Anna Dyrdał,Jamal Berakdar###
(656226, 656227)
 Both the ISGE and AMR exhibit a strong dependence on themagnetization and the Fermi level position and can be utilized for spintronicsand SOT<missing VAR>-based applications at the nanoscale.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Superconductor-Insulator Transition and the Crossover to Non Equilibrium in two-dimensional Indium - Indium-Oxide composite|Bar Hen,Xinyang Zhang,Victor Shelukhin,Aharon Kapitulnik,Alexander Palevski###
(656393, 656393)
 We have used annealing to tune the coupling to lie just at theborderline where superconductivity in the underlying InOx is suppressed, whichis also close to the metal-insulator transition of the InOx.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Superconductor-Insulator Transition and the Crossover to Non Equilibrium in two-dimensional Indium - Indium-Oxide composite|Bar Hen,Xinyang Zhang,Victor Shelukhin,Aharon Kapitulnik,Alexander Palevski###
(656424, 656424)
 We have used annealing to tune the coupling to lie just at theborderline where superconductivity in the underlying InOx is suppressed, whichis also close to the metal-insulator transition of the InOx.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Superconductor-Insulator Transition and the Crossover to Non Equilibrium in two-dimensional Indium - Indium-Oxide composite|Bar Hen,Xinyang Zhang,Victor Shelukhin,Aharon Kapitulnik,Alexander Palevski###
(656447, 656447)
 The hybrid systemexhibits a giant magnetoresistance above the H-SIT<missing VAR>, with critical behaviorthat manifests the duality between Cooper pairs and vortices.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SI
###Superconductor-Insulator Transition and the Crossover to Non Equilibrium in two-dimensional Indium - Indium-Oxide composite|Bar Hen,Xinyang Zhang,Victor Shelukhin,Aharon Kapitulnik,Alexander Palevski###
(656449, 656450)
 The hybrid systemexhibits a giant magnetoresistance above the H-SIT<missing VAR>, with critical behaviorthat manifests the duality between Cooper pairs and vortices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoO/Pt
###Efficient spin torques in antiferromagnetic CoO/Pt quantified by comparing field- and current- induced switching|Lorenzo Baldrati,Christin Schmitt,Olena Gomonay,Romain Lebrun,Rafael Ramos,Eiji Saitoh,Jairo Sinova,Mathias Kläui###
(656498, 656501)
Efficient spin torques in antiferromagnetic CoO/Pt quantified by comparing field- and current- induced switching.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

CoO/Pt
###Efficient spin torques in antiferromagnetic CoO/Pt quantified by comparing field- and current- induced switching|Lorenzo Baldrati,Christin Schmitt,Olena Gomonay,Romain Lebrun,Rafael Ramos,Eiji Saitoh,Jairo Sinova,Mathias Kläui###
(656541, 656544)
 We achieve current-induced switching in collinear insulatingantiferromagnetic CoO/Pt, with fourfold in-plane magnetic anisotropy.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

CoO
###Efficient spin torques in antiferromagnetic CoO/Pt quantified by comparing field- and current- induced switching|Lorenzo Baldrati,Christin Schmitt,Olena Gomonay,Romain Lebrun,Rafael Ramos,Eiji Saitoh,Jairo Sinova,Mathias Kläui###
(656602, 656603)
 This ismeasured electrically by spin Hall magnetoresistance and confirmed by themagnetic field-induced spin-flop transition of the CoO layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Efficient spin torques in antiferromagnetic CoO/Pt quantified by comparing field- and current- induced switching|Lorenzo Baldrati,Christin Schmitt,Olena Gomonay,Romain Lebrun,Rafael Ramos,Eiji Saitoh,Jairo Sinova,Mathias Kläui###
(656680, 656680)
 The Neel vector final state (n<missing VAR> perp j) is inline with a thermomagnetoelastic switching mechanism for a negativemagnetoelastic constant of the CoO.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoO
###Efficient spin torques in antiferromagnetic CoO/Pt quantified by comparing field- and current- induced switching|Lorenzo Baldrati,Christin Schmitt,Olena Gomonay,Romain Lebrun,Rafael Ramos,Eiji Saitoh,Jairo Sinova,Mathias Kläui###
(656729, 656730)
 The Neel vector final state (n<missing VAR> perp j) is inline with a thermomagnetoelastic switching mechanism for a negativemagnetoelastic constant of the CoO.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YBa2Cu4O8
###Fermi-surface reconstruction and two-carrier model for the Hall effect in YBa2Cu4O8|P. M. C. Rourke,A. F. Bangura,C. Proust,J. Levallois,N. Doiron-Leyraud,D. LeBoeuf,L. Taillefer,S. Adachi,M. L. Sutherland,N. E. Hussey###
(656765, 656771)
Fermi-surface reconstruction and two-carrier model for the Hall effect in YBa2Cu4O8.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.26666666666666666,0,0,0,0,0,0,0,0,0,0.06666666666666667,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 30, 'K', 3],[169.0, 50, 'K', 4]

YBa2Cu4O8
###Fermi-surface reconstruction and two-carrier model for the Hall effect in YBa2Cu4O8|P. M. C. Rourke,A. F. Bangura,C. Proust,J. Levallois,N. Doiron-Leyraud,D. LeBoeuf,L. Taillefer,S. Adachi,M. L. Sutherland,N. E. Hussey###
(656797, 656803)
 Pulsed field measurements of the Hall resistivity and magnetoresistance ofunderdoped YBa2Cu4O8 are analyzed self-consistently using a simple model basedon coexisting electron and hole carriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.26666666666666666,0,0,0,0,0,0,0,0,0,0.06666666666666667,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 30, 'K', 2],[137.0, 50, 'K', 3]

Y
###Fermi-surface reconstruction and two-carrier model for the Hall effect in YBa2Cu4O8|P. M. C. Rourke,A. F. Bangura,C. Proust,J. Levallois,N. Doiron-Leyraud,D. LeBoeuf,L. Taillefer,S. Adachi,M. L. Sutherland,N. E. Hussey###
(656977, 656977)
The overall quality of the fits not only provides strong evidence forFermi-surface reconstruction in Y-based cuprates, it also strongly constrainsthe type of reconstruction that might be occurring.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 30, 'K', 2],[37.0, 50, 'K', 1]

S
###STS study of the CMR effect of a manganite thin film in an external magnetic field|B. Damaschke,T. Mildner,V. Moshnyaga,K. Samwer###
(657269, 657269)
ST<missing VAR>S study of the CMR effect of a manganite thin film in an external magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[180.0, 4, 'T', 3]

S
###STS study of the CMR effect of a manganite thin film in an external magnetic field|B. Damaschke,T. Mildner,V. Moshnyaga,K. Samwer###
(657271, 657271)
ST<missing VAR>S study of the CMR effect of a manganite thin film in an external magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 4, 'T', 3]

C
###STS study of the CMR effect of a manganite thin film in an external magnetic field|B. Damaschke,T. Mildner,V. Moshnyaga,K. Samwer###
(657279, 657279)
ST<missing VAR>S study of the CMR effect of a manganite thin film in an external magnetic field.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[170.0, 4, 'T', 3]

La0.75Ca0.25MnO3
###STS study of the CMR effect of a manganite thin film in an external magnetic field|B. Damaschke,T. Mildner,V. Moshnyaga,K. Samwer###
(657308, 657314)
 A La0.75Ca0.25MnO3-film grown by metalorganic aerosol deposition techniquewas investigated by scanning tunnelling microscopy and spectroscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.05,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 4, 'T', 2]

C
###STS study of the CMR effect of a manganite thin film in an external magnetic field|B. Damaschke,T. Mildner,V. Moshnyaga,K. Samwer###
(657416, 657416)
 A smallspot was found on the surface which exhibits the expected magnetic fielddependence of the tunnelling conductivity giving the opportunity for a localspectroscopic study of the intrinsic colossal magnetoresistance (CMR) behavior.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 4, 'T', 1]

C
###STS study of the CMR effect of a manganite thin film in an external magnetic field|B. Damaschke,T. Mildner,V. Moshnyaga,K. Samwer###
(657455, 657455)
The tunnelling conductivity is strongly enhanced in an external magnetic fieldof 4 T and the CMR behavior can be interpreted in terms of a redistribution ofoccupied electronic states torwards the Fermi energy.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 4, 'T', 0]

GaMnAs
###GaMnAs-based magnetic tunnel junctions with an AlMnAs barrier|Shinobu Ohya,Iriya Muneta,Pham Nam Hai,Masaaki Tanaka###
(657503, 657505)
GaMnAs-based magnetic tunnel junctions with an AlMnAs barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 110, 'meV', 2],[136.0, 175, '%', 3],[141.0, 2.6, 'K', 3]

AlMnAs
###GaMnAs-based magnetic tunnel junctions with an AlMnAs barrier|Shinobu Ohya,Iriya Muneta,Pham Nam Hai,Masaaki Tanaka###
(657519, 657521)
GaMnAs-based magnetic tunnel junctions with an AlMnAs barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 110, 'meV', 2],[120.0, 175, '%', 3],[125.0, 2.6, 'K', 3]

GaMnAs
###GaMnAs-based magnetic tunnel junctions with an AlMnAs barrier|Shinobu Ohya,Iriya Muneta,Pham Nam Hai,Masaaki Tanaka###
(657540, 657542)
 We investigate the spin-dependent transport of GaMnAs-based magnetic tunneljunctions (MTJs) containing a paramagnetic AlMnAs barrier with variousthicknesses.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 110, 'meV', 1],[99.0, 175, '%', 2],[104.0, 2.6, 'K', 2]

AlMnAs
###GaMnAs-based magnetic tunnel junctions with an AlMnAs barrier|Shinobu Ohya,Iriya Muneta,Pham Nam Hai,Masaaki Tanaka###
(657565, 657567)
 We investigate the spin-dependent transport of GaMnAs-based magnetic tunneljunctions (MTJs) containing a paramagnetic AlMnAs barrier with variousthicknesses.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 110, 'meV', 1],[74.0, 175, '%', 2],[79.0, 2.6, 'K', 2]

AlMnAs
###GaMnAs-based magnetic tunnel junctions with an AlMnAs barrier|Shinobu Ohya,Iriya Muneta,Pham Nam Hai,Masaaki Tanaka###
(657587, 657589)
 The barrier height of AlMnAs with respect to the Fermi level ofGaMnAs is estimated to be 110 meV.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 110, 'meV', 0],[52.0, 175, '%', 1],[57.0, 2.6, 'K', 1]

GaMnAs
###GaMnAs-based magnetic tunnel junctions with an AlMnAs barrier|Shinobu Ohya,Iriya Muneta,Pham Nam Hai,Masaaki Tanaka###
(657606, 657608)
 The barrier height of AlMnAs with respect to the Fermi level ofGaMnAs is estimated to be 110 meV.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 110, 'meV', 0],[33.0, 175, '%', 1],[38.0, 2.6, 'K', 1]

GaMnAs
###GaMnAs-based magnetic tunnel junctions with an AlMnAs barrier|Shinobu Ohya,Iriya Muneta,Pham Nam Hai,Masaaki Tanaka###
(657664, 657666)
 We observe tunneling magnetoresistance (TMR)ratios up to 175% (at 2.6 K), which is higher than those of the GaMnAs-basedMTJs with other barrier materials in the same temperature region.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 110, 'meV', 1],[23.0, 175, '%', 0],[18.0, 2.6, 'K', 0]

AlMnAs
###GaMnAs-based magnetic tunnel junctions with an AlMnAs barrier|Shinobu Ohya,Iriya Muneta,Pham Nam Hai,Masaaki Tanaka###
(657728, 657730)
 These highTMR ratios can be mainly attributed to the relatively high crystal quality ofAlMnAs and the suppression of the tunneling probability near at the in-planewave-vector k<missing VAR>0.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 110, 'meV', 2],[87.0, 175, '%', 1],[82.0, 2.6, 'K', 1]

CoAsO
###Large Magnetoresistance Effects in $Ln$CoAsO with a Ferromagnetic-Antiferromagnetic Transition|Hiroto Ohta,Chishiro Michioka,Kazuyoshi Yoshimura###
(658049, 658051)
Large Magnetoresistance Effects in LnCoAsO with a Ferromagnetic-Antiferromagnetic Transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 3, ',', 1]

NdCoAsO
###Large Magnetoresistance Effects in $Ln$CoAsO with a Ferromagnetic-Antiferromagnetic Transition|Hiroto Ohta,Chishiro Michioka,Kazuyoshi Yoshimura###
(658090, 658093)
 A large magnetoresistance (MR) effect was observed in the layered compoundsNdCoAsO and SmCoAsO, in which ferromagnetically ordered itinerant-electrons ofCo are sandwiched by localized 4f<missing VAR>-electrons of Ln3, belowferromagnetic-antiferromagnetic transition (FAFT) temperature T<missing VAR>mathrmN asobserved in other FAFT<missing VAR> compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 3, ',', 0]

SmCoAsO
###Large Magnetoresistance Effects in $Ln$CoAsO with a Ferromagnetic-Antiferromagnetic Transition|Hiroto Ohta,Chishiro Michioka,Kazuyoshi Yoshimura###
(658097, 658100)
 A large magnetoresistance (MR) effect was observed in the layered compoundsNdCoAsO and SmCoAsO, in which ferromagnetically ordered itinerant-electrons ofCo are sandwiched by localized 4f<missing VAR>-electrons of Ln3, belowferromagnetic-antiferromagnetic transition (FAFT) temperature T<missing VAR>mathrmN asobserved in other FAFT<missing VAR> compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 3, ',', 0]

Co
###Large Magnetoresistance Effects in $Ln$CoAsO with a Ferromagnetic-Antiferromagnetic Transition|Hiroto Ohta,Chishiro Michioka,Kazuyoshi Yoshimura###
(658118, 658118)
 A large magnetoresistance (MR) effect was observed in the layered compoundsNdCoAsO and SmCoAsO, in which ferromagnetically ordered itinerant-electrons ofCo are sandwiched by localized 4f<missing VAR>-electrons of Ln3, belowferromagnetic-antiferromagnetic transition (FAFT) temperature T<missing VAR>mathrmN asobserved in other FAFT<missing VAR> compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 3, ',', 0]

F
###Large Magnetoresistance Effects in $Ln$CoAsO with a Ferromagnetic-Antiferromagnetic Transition|Hiroto Ohta,Chishiro Michioka,Kazuyoshi Yoshimura###
(658149, 658149)
 A large magnetoresistance (MR) effect was observed in the layered compoundsNdCoAsO and SmCoAsO, in which ferromagnetically ordered itinerant-electrons ofCo are sandwiched by localized 4f<missing VAR>-electrons of Ln3, belowferromagnetic-antiferromagnetic transition (FAFT) temperature T<missing VAR>mathrmN asobserved in other FAFT<missing VAR> compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 3, ',', 0]

F
###Large Magnetoresistance Effects in $Ln$CoAsO with a Ferromagnetic-Antiferromagnetic Transition|Hiroto Ohta,Chishiro Michioka,Kazuyoshi Yoshimura###
(658151, 658151)
 A large magnetoresistance (MR) effect was observed in the layered compoundsNdCoAsO and SmCoAsO, in which ferromagnetically ordered itinerant-electrons ofCo are sandwiched by localized 4f<missing VAR>-electrons of Ln3, belowferromagnetic-antiferromagnetic transition (FAFT) temperature T<missing VAR>mathrmN asobserved in other FAFT<missing VAR> compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 3, ',', 0]

N
###Large Magnetoresistance Effects in $Ln$CoAsO with a Ferromagnetic-Antiferromagnetic Transition|Hiroto Ohta,Chishiro Michioka,Kazuyoshi Yoshimura###
(658159, 658159)
 A large magnetoresistance (MR) effect was observed in the layered compoundsNdCoAsO and SmCoAsO, in which ferromagnetically ordered itinerant-electrons ofCo are sandwiched by localized 4f<missing VAR>-electrons of Ln3, belowferromagnetic-antiferromagnetic transition (FAFT) temperature T<missing VAR>mathrmN asobserved in other FAFT<missing VAR> compounds.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 3, ',', 0]

F
###Large Magnetoresistance Effects in $Ln$CoAsO with a Ferromagnetic-Antiferromagnetic Transition|Hiroto Ohta,Chishiro Michioka,Kazuyoshi Yoshimura###
(658170, 658170)
 A large magnetoresistance (MR) effect was observed in the layered compoundsNdCoAsO and SmCoAsO, in which ferromagnetically ordered itinerant-electrons ofCo are sandwiched by localized 4f<missing VAR>-electrons of Ln3, belowferromagnetic-antiferromagnetic transition (FAFT) temperature T<missing VAR>mathrmN asobserved in other FAFT<missing VAR> compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 3, ',', 0]

F
###Large Magnetoresistance Effects in $Ln$CoAsO with a Ferromagnetic-Antiferromagnetic Transition|Hiroto Ohta,Chishiro Michioka,Kazuyoshi Yoshimura###
(658172, 658172)
 A large magnetoresistance (MR) effect was observed in the layered compoundsNdCoAsO and SmCoAsO, in which ferromagnetically ordered itinerant-electrons ofCo are sandwiched by localized 4f<missing VAR>-electrons of Ln3, belowferromagnetic-antiferromagnetic transition (FAFT) temperature T<missing VAR>mathrmN asobserved in other FAFT<missing VAR> compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 3, ',', 0]

In
###Large Magnetoresistance Effects in $Ln$CoAsO with a Ferromagnetic-Antiferromagnetic Transition|Hiroto Ohta,Chishiro Michioka,Kazuyoshi Yoshimura###
(658178, 658178)
 In SmCoAsO, the large MR effect is alsoobserved up to the Curie temperature T<missing VAR>mathrmC, and it is found to beoriginating in the presence of another antiferromagnetic phase in thelow-magnetic field region of the ferromagnetic phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 3, ',', 1]

SmCoAsO
###Large Magnetoresistance Effects in $Ln$CoAsO with a Ferromagnetic-Antiferromagnetic Transition|Hiroto Ohta,Chishiro Michioka,Kazuyoshi Yoshimura###
(658180, 658183)
 In SmCoAsO, the large MR effect is alsoobserved up to the Curie temperature T<missing VAR>mathrmC, and it is found to beoriginating in the presence of another antiferromagnetic phase in thelow-magnetic field region of the ferromagnetic phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 3, ',', 1]

C
###Large Magnetoresistance Effects in $Ln$CoAsO with a Ferromagnetic-Antiferromagnetic Transition|Hiroto Ohta,Chishiro Michioka,Kazuyoshi Yoshimura###
(658214, 658214)
 In SmCoAsO, the large MR effect is alsoobserved up to the Curie temperature T<missing VAR>mathrmC, and it is found to beoriginating in the presence of another antiferromagnetic phase in thelow-magnetic field region of the ferromagnetic phase.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 3, ',', 1]

YbRh2Si2
###Lifshitz transitions and quasiparticle de-renormalization in YbRh$_2$Si$_2$|H. R. Naren,S. Friedemann,G. Zwicknagl,C. Krellner,C. Geibel,F. Steglich,S. Wirth###
(658290, 658294)
Lifshitz transitions and quasiparticle de-renormalization in YbRh2Si2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 15, 'T', 1]

YbRh2Si2
###Lifshitz transitions and quasiparticle de-renormalization in YbRh$_2$Si$_2$|H. R. Naren,S. Friedemann,G. Zwicknagl,C. Krellner,C. Geibel,F. Steglich,S. Wirth###
(658329, 658333)
 We study the effect of magnetic fields up to 15 T on the heavy fermion stateof YbRh2Si2 via Hall effect and magnetoresistance measurements down to 50m<missing VAR>K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 15, 'T', 0]

K
###Lifshitz transitions and quasiparticle de-renormalization in YbRh$_2$Si$_2$|H. R. Naren,S. Friedemann,G. Zwicknagl,C. Krellner,C. Geibel,F. Steglich,S. Wirth###
(658355, 658355)
 We study the effect of magnetic fields up to 15 T on the heavy fermion stateof YbRh2Si2 via Hall effect and magnetoresistance measurements down to 50m<missing VAR>K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 15, 'T', 0]

Pd
###Reversal mode instability and magnetoresistance in perpendicular (Co/Pd)/Cu/(Co/Ni) pseudo-spin-valves|J. E. Davies,D. A. Gilbert,S. M. Mohseni,R. K. Dumas,J. Åkerman,Kai Liu###
(658526, 658526)
Reversal mode instability and magnetoresistance in perpendicular (Co/Pd)/Cu/(Co/Ni) pseudo-spin-valves.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 300, 'K', 2],[107.0, 200, 'K', 3]

Ni
###Reversal mode instability and magnetoresistance in perpendicular (Co/Pd)/Cu/(Co/Ni) pseudo-spin-valves|J. E. Davies,D. A. Gilbert,S. M. Mohseni,R. K. Dumas,J. Åkerman,Kai Liu###
(658534, 658534)
Reversal mode instability and magnetoresistance in perpendicular (Co/Pd)/Cu/(Co/Ni) pseudo-spin-valves.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 300, 'K', 2],[99.0, 200, 'K', 3]

Pd
###Reversal mode instability and magnetoresistance in perpendicular (Co/Pd)/Cu/(Co/Ni) pseudo-spin-valves|J. E. Davies,D. A. Gilbert,S. M. Mohseni,R. K. Dumas,J. Åkerman,Kai Liu###
(658572, 658572)
 We have observed distinct temperature-dependent magnetization reversal modesin a perpendicular (Co/Pd)4/Co/Cu/(Co/Ni)4/Co pseudo-spin-valve, which arecorrelated with spin-transport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 300, 'K', 1],[61.0, 200, 'K', 2]

Co/Cu
###Reversal mode instability and magnetoresistance in perpendicular (Co/Pd)/Cu/(Co/Ni) pseudo-spin-valves|J. E. Davies,D. A. Gilbert,S. M. Mohseni,R. K. Dumas,J. Åkerman,Kai Liu###
(658576, 658578)
 We have observed distinct temperature-dependent magnetization reversal modesin a perpendicular (Co/Pd)4/Co/Cu/(Co/Ni)4/Co pseudo-spin-valve, which arecorrelated with spin-transport properties.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[35.0, 300, 'K', 1],[55.0, 200, 'K', 2]

Ni
###Reversal mode instability and magnetoresistance in perpendicular (Co/Pd)/Cu/(Co/Ni) pseudo-spin-valves|J. E. Davies,D. A. Gilbert,S. M. Mohseni,R. K. Dumas,J. Åkerman,Kai Liu###
(658583, 658583)
 We have observed distinct temperature-dependent magnetization reversal modesin a perpendicular (Co/Pd)4/Co/Cu/(Co/Ni)4/Co pseudo-spin-valve, which arecorrelated with spin-transport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 300, 'K', 1],[50.0, 200, 'K', 2]

Co
###Reversal mode instability and magnetoresistance in perpendicular (Co/Pd)/Cu/(Co/Ni) pseudo-spin-valves|J. E. Davies,D. A. Gilbert,S. M. Mohseni,R. K. Dumas,J. Åkerman,Kai Liu###
(658587, 658587)
 We have observed distinct temperature-dependent magnetization reversal modesin a perpendicular (Co/Pd)4/Co/Cu/(Co/Ni)4/Co pseudo-spin-valve, which arecorrelated with spin-transport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 300, 'K', 1],[46.0, 200, 'K', 2]

At
###Reversal mode instability and magnetoresistance in perpendicular (Co/Pd)/Cu/(Co/Ni) pseudo-spin-valves|J. E. Davies,D. A. Gilbert,S. M. Mohseni,R. K. Dumas,J. Åkerman,Kai Liu###
(658612, 658612)
 At 300 K, magnetization reversaloccurs by vertically correlated domains.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[1.0, 300, 'K', 0],[21.0, 200, 'K', 1]

F
###RF amplification property of the MgO-based magnetic tunnel junction using field-induced ferromagnetic resonance|K. Konishi,D. K. Dixit,A. A. Tulapurkar,S. Miwa,T. Nozaki,H. Kubota,A. Fukushima,S. Yuasa,Y. Suzuki###
(658782, 658782)
R<missing VAR>F amplification property of the MgO-based magnetic tunnel junction using field-induced ferromagnetic resonance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###RF amplification property of the MgO-based magnetic tunnel junction using field-induced ferromagnetic resonance|K. Konishi,D. K. Dixit,A. A. Tulapurkar,S. Miwa,T. Nozaki,H. Kubota,A. Fukushima,S. Yuasa,Y. Suzuki###
(658792, 658793)
R<missing VAR>F amplification property of the MgO-based magnetic tunnel junction using field-induced ferromagnetic resonance.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###RF amplification property of the MgO-based magnetic tunnel junction using field-induced ferromagnetic resonance|K. Konishi,D. K. Dixit,A. A. Tulapurkar,S. Miwa,T. Nozaki,H. Kubota,A. Fukushima,S. Yuasa,Y. Suzuki###
(658822, 658822)
 The radio-frequency (R<missing VAR>F) voltage amplification property of a tunnelmagnetoresistance device driven by an R<missing VAR>F external-magnetic-field-inducedferromagnetic resonance was studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###RF amplification property of the MgO-based magnetic tunnel junction using field-induced ferromagnetic resonance|K. Konishi,D. K. Dixit,A. A. Tulapurkar,S. Miwa,T. Nozaki,H. Kubota,A. Fukushima,S. Yuasa,Y. Suzuki###
(658849, 658849)
 The radio-frequency (R<missing VAR>F) voltage amplification property of a tunnelmagnetoresistance device driven by an R<missing VAR>F external-magnetic-field-inducedferromagnetic resonance was studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###RF amplification property of the MgO-based magnetic tunnel junction using field-induced ferromagnetic resonance|K. Konishi,D. K. Dixit,A. A. Tulapurkar,S. Miwa,T. Nozaki,H. Kubota,A. Fukushima,S. Yuasa,Y. Suzuki###
(658913, 658913)
 Theinput R<missing VAR>F voltage applied to the waveguide can excite the resonant dynamics inthe free layer magnetization, leading to the generation of an output R<missing VAR>F voltageunder a D<missing VAR>C bias current.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###RF amplification property of the MgO-based magnetic tunnel junction using field-induced ferromagnetic resonance|K. Konishi,D. K. Dixit,A. A. Tulapurkar,S. Miwa,T. Nozaki,H. Kubota,A. Fukushima,S. Yuasa,Y. Suzuki###
(658962, 658962)
 Theinput R<missing VAR>F voltage applied to the waveguide can excite the resonant dynamics inthe free layer magnetization, leading to the generation of an output R<missing VAR>F voltageunder a D<missing VAR>C bias current.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###RF amplification property of the MgO-based magnetic tunnel junction using field-induced ferromagnetic resonance|K. Konishi,D. K. Dixit,A. A. Tulapurkar,S. Miwa,T. Nozaki,H. Kubota,A. Fukushima,S. Yuasa,Y. Suzuki###
(658972, 658972)
 Theinput R<missing VAR>F voltage applied to the waveguide can excite the resonant dynamics inthe free layer magnetization, leading to the generation of an output R<missing VAR>F voltageunder a D<missing VAR>C bias current.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###RF amplification property of the MgO-based magnetic tunnel junction using field-induced ferromagnetic resonance|K. Konishi,D. K. Dixit,A. A. Tulapurkar,S. Miwa,T. Nozaki,H. Kubota,A. Fukushima,S. Yuasa,Y. Suzuki###
(658988, 658988)
 The dependences of the R<missing VAR>F voltage gain on the staticexternal magnetic field strength and angle were systematically investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ba
###Kondo-like mass enhancement of Dirac fermion in iron pnictides Ba(Fe$_{1-x}$Mn$_x$As)$_2$|T. Urata,Y. Tanabe,K. K. Huynh,H. Oguro,K. Watanabe,S. Heguri,K. Tanigaki###
(659077, 659077)
Kondo-like mass enhancement of Dirac fermion in iron pnictides Ba(Fe1-xMnx<missing VAR>As)2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe1-xMn
###Kondo-like mass enhancement of Dirac fermion in iron pnictides Ba(Fe$_{1-x}$Mn$_x$As)$_2$|T. Urata,Y. Tanabe,K. K. Huynh,H. Oguro,K. Watanabe,S. Heguri,K. Tanigaki###
(659079, 659083)
Kondo-like mass enhancement of Dirac fermion in iron pnictides Ba(Fe1-xMnx<missing VAR>As)2.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

As
###Kondo-like mass enhancement of Dirac fermion in iron pnictides Ba(Fe$_{1-x}$Mn$_x$As)$_2$|T. Urata,Y. Tanabe,K. K. Huynh,H. Oguro,K. Watanabe,S. Heguri,K. Tanigaki###
(659085, 659085)
Kondo-like mass enhancement of Dirac fermion in iron pnictides Ba(Fe1-xMnx<missing VAR>As)2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Kondo-like mass enhancement of Dirac fermion in iron pnictides Ba(Fe$_{1-x}$Mn$_x$As)$_2$|T. Urata,Y. Tanabe,K. K. Huynh,H. Oguro,K. Watanabe,S. Heguri,K. Tanigaki###
(659096, 659096)
 The effect of Mn substitution, acting as a magnetic impurity for Fe, on theDirac cone was investigated in Ba(Fe1-xMnx<missing VAR>As)2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Kondo-like mass enhancement of Dirac fermion in iron pnictides Ba(Fe$_{1-x}$Mn$_x$As)$_2$|T. Urata,Y. Tanabe,K. K. Huynh,H. Oguro,K. Watanabe,S. Heguri,K. Tanigaki###
(659113, 659113)
 The effect of Mn substitution, acting as a magnetic impurity for Fe, on theDirac cone was investigated in Ba(Fe1-xMnx<missing VAR>As)2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ba
###Kondo-like mass enhancement of Dirac fermion in iron pnictides Ba(Fe$_{1-x}$Mn$_x$As)$_2$|T. Urata,Y. Tanabe,K. K. Huynh,H. Oguro,K. Watanabe,S. Heguri,K. Tanigaki###
(659131, 659131)
 The effect of Mn substitution, acting as a magnetic impurity for Fe, on theDirac cone was investigated in Ba(Fe1-xMnx<missing VAR>As)2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe1-xMn
###Kondo-like mass enhancement of Dirac fermion in iron pnictides Ba(Fe$_{1-x}$Mn$_x$As)$_2$|T. Urata,Y. Tanabe,K. K. Huynh,H. Oguro,K. Watanabe,S. Heguri,K. Tanigaki###
(659133, 659137)
 The effect of Mn substitution, acting as a magnetic impurity for Fe, on theDirac cone was investigated in Ba(Fe1-xMnx<missing VAR>As)2.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

As
###Kondo-like mass enhancement of Dirac fermion in iron pnictides Ba(Fe$_{1-x}$Mn$_x$As)$_2$|T. Urata,Y. Tanabe,K. K. Huynh,H. Oguro,K. Watanabe,S. Heguri,K. Tanigaki###
(659139, 659139)
 The effect of Mn substitution, acting as a magnetic impurity for Fe, on theDirac cone was investigated in Ba(Fe1-xMnx<missing VAR>As)2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr
###Two-dimensional electron gas in a modulation-doped SrTiO3/Sr(Ti,Zr)O3 heterostructure|Adam P. Kajdos,Daniel G. Ouellette,Tyler A. Cain,Susanne Stemmer###
(659331, 659331)
Two-dimensional electron gas in a modulation-doped SrTiO3/Sr(Ti,Zr)O3 heterostructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 2, 'DEG', 3]

Ti
###Two-dimensional electron gas in a modulation-doped SrTiO3/Sr(Ti,Zr)O3 heterostructure|Adam P. Kajdos,Daniel G. Ouellette,Tyler A. Cain,Susanne Stemmer###
(659333, 659333)
Two-dimensional electron gas in a modulation-doped SrTiO3/Sr(Ti,Zr)O3 heterostructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 2, 'DEG', 3]

Zr
###Two-dimensional electron gas in a modulation-doped SrTiO3/Sr(Ti,Zr)O3 heterostructure|Adam P. Kajdos,Daniel G. Ouellette,Tyler A. Cain,Susanne Stemmer###
(659335, 659335)
Two-dimensional electron gas in a modulation-doped SrTiO3/Sr(Ti,Zr)O3 heterostructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 2, 'DEG', 3]

O3
###Two-dimensional electron gas in a modulation-doped SrTiO3/Sr(Ti,Zr)O3 heterostructure|Adam P. Kajdos,Daniel G. Ouellette,Tyler A. Cain,Susanne Stemmer###
(659337, 659338)
Two-dimensional electron gas in a modulation-doped SrTiO3/Sr(Ti,Zr)O3 heterostructure.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 2, 'DEG', 3]

SrTiO3
###Two-dimensional electron gas in a modulation-doped SrTiO3/Sr(Ti,Zr)O3 heterostructure|Adam P. Kajdos,Daniel G. Ouellette,Tyler A. Cain,Susanne Stemmer###
(659362, 659365)
 A two-dimensional electron gas (2DEG) in SrTiO3 is created via modulationdoping by interfacing undoped SrTiO3 with a wider-band-gap material,SrTi1-xZrxO3, that is doped n<missing VAR>-type with La.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 2, 'DEG', 2]

SrTiO3
###Two-dimensional electron gas in a modulation-doped SrTiO3/Sr(Ti,Zr)O3 heterostructure|Adam P. Kajdos,Daniel G. Ouellette,Tyler A. Cain,Susanne Stemmer###
(659384, 659387)
 A two-dimensional electron gas (2DEG) in SrTiO3 is created via modulationdoping by interfacing undoped SrTiO3 with a wider-band-gap material,SrTi1-xZrxO3, that is doped n<missing VAR>-type with La.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 2, 'DEG', 2]

SrTi1-x
###Two-dimensional electron gas in a modulation-doped SrTiO3/Sr(Ti,Zr)O3 heterostructure|Adam P. Kajdos,Daniel G. Ouellette,Tyler A. Cain,Susanne Stemmer###
(659403, 659407)
 A two-dimensional electron gas (2DEG) in SrTiO3 is created via modulationdoping by interfacing undoped SrTiO3 with a wider-band-gap material,SrTi1-xZrxO3, that is doped n<missing VAR>-type with La.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[74.0, 2, 'DEG', 2]

O3
###Two-dimensional electron gas in a modulation-doped SrTiO3/Sr(Ti,Zr)O3 heterostructure|Adam P. Kajdos,Daniel G. Ouellette,Tyler A. Cain,Susanne Stemmer###
(659409, 659410)
 A two-dimensional electron gas (2DEG) in SrTiO3 is created via modulationdoping by interfacing undoped SrTiO3 with a wider-band-gap material,SrTi1-xZrxO3, that is doped n<missing VAR>-type with La.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 2, 'DEG', 2]

La
###Two-dimensional electron gas in a modulation-doped SrTiO3/Sr(Ti,Zr)O3 heterostructure|Adam P. Kajdos,Daniel G. Ouellette,Tyler A. Cain,Susanne Stemmer###
(659425, 659425)
 A two-dimensional electron gas (2DEG) in SrTiO3 is created via modulationdoping by interfacing undoped SrTiO3 with a wider-band-gap material,SrTi1-xZrxO3, that is doped n<missing VAR>-type with La.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 2, 'DEG', 2]

SrTiO3
###Two-dimensional electron gas in a modulation-doped SrTiO3/Sr(Ti,Zr)O3 heterostructure|Adam P. Kajdos,Daniel G. Ouellette,Tyler A. Cain,Susanne Stemmer###
(659472, 659475)
 Using magnetoresistance measurements, we show thatelectrons are transferred into the SrTiO3, and a 2DEG is formed.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 2, 'DEG', 0]

In
###Two-dimensional electron gas in a modulation-doped SrTiO3/Sr(Ti,Zr)O3 heterostructure|Adam P. Kajdos,Daniel G. Ouellette,Tyler A. Cain,Susanne Stemmer###
(659488, 659488)
 In particular,Shubnikov-de Haas oscillations are shown to depend only on the perpendicularmagnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 2, 'DEG', 1]

La0.7Ca0.3MnO3
###Emergent Spin-Filter at the interface between Ferromagnetic and Insulating Layered Oxides|Yaohua Liu,F. A. Cuellar,Z. Sefrioui,J. W. Freeland,M. R. Fitzsimmons,C. Leon,J. Santamaria,S. G. E. te Velthuis###
(659631, 659637)
 We report a strong effect of interface-induced magnetization on the transportproperties of magnetic tunnel junctions consisting of ferromagnetic manganiteLa0.7Ca0.3MnO3 and insulating cuprate PrBa2Cu3O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PrBa2Cu3O7
###Emergent Spin-Filter at the interface between Ferromagnetic and Insulating Layered Oxides|Yaohua Liu,F. A. Cuellar,Z. Sefrioui,J. W. Freeland,M. R. Fitzsimmons,C. Leon,J. Santamaria,S. G. E. te Velthuis###
(659645, 659651)
 We report a strong effect of interface-induced magnetization on the transportproperties of magnetic tunnel junctions consisting of ferromagnetic manganiteLa0.7Ca0.3MnO3 and insulating cuprate PrBa2Cu3O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5384615384615384,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23076923076923078,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15384615384615385,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Emergent Spin-Filter at the interface between Ferromagnetic and Insulating Layered Oxides|Yaohua Liu,F. A. Cuellar,Z. Sefrioui,J. W. Freeland,M. R. Fitzsimmons,C. Leon,J. Santamaria,S. G. E. te Velthuis###
(659769, 659769)
 Interestingly, this anomalous behaviorcan be attributed to the competition between the positive spin polarization ofthe manganite contacts and the negative spin-filter effect from theinterface-induced Cu magnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeAsO
###Role of Dirac cones in magnetotransport properties of REFeAsO (RE=rare earth) oxypnictides|I. Pallecchi,F. Bernardini,F. Caglieris,A. Palenzona,S. Massidda,M. Putti###
(659800, 659802)
Role of Dirac cones in magnetotransport properties of REFeAsO (RErare earth) oxypnictides.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Role of Dirac cones in magnetotransport properties of REFeAsO (RE=rare earth) oxypnictides|I. Pallecchi,F. Bernardini,F. Caglieris,A. Palenzona,S. Massidda,M. Putti###
(659815, 659815)
 In this work we study the effect of the rare earth element in ironoxypnictides of composition REFeAsO (RErare earth).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeAsO
###Role of Dirac cones in magnetotransport properties of REFeAsO (RE=rare earth) oxypnictides|I. Pallecchi,F. Bernardini,F. Caglieris,A. Palenzona,S. Massidda,M. Putti###
(659852, 659854)
 In this work we study the effect of the rare earth element in ironoxypnictides of composition REFeAsO (RErare earth).
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Y
###Role of Dirac cones in magnetotransport properties of REFeAsO (RE=rare earth) oxypnictides|I. Pallecchi,F. Bernardini,F. Caglieris,A. Palenzona,S. Massidda,M. Putti###
(659929, 659929)
 On one hand we carry outDensity Functional Theory calculations of the band structure, which evidencethe multiband character of these compounds and the presence of Dirac conesalong the Y-Gamma and Z-R directions of the reciprocal space.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PdCoO2
###Extremely Large Magnetoresistance in the Nonmagnetic Metal PdCoO2|Hiroshi Takatsu,Jun J. Ishikawa,Shingo Yonezawa,Harukazu Yoshino,Tatsuya Shishidou,Tamio Oguchi,Keizo Murata,Yoshiteru Maeno###
(660080, 660083)
Extremely Large Magnetoresistance in the Nonmagnetic Metal PdCoO2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 35000, '%', 2]

PdCoO2
###Extremely Large Magnetoresistance in the Nonmagnetic Metal PdCoO2|Hiroshi Takatsu,Jun J. Ishikawa,Shingo Yonezawa,Harukazu Yoshino,Tatsuya Shishidou,Tamio Oguchi,Keizo Murata,Yoshiteru Maeno###
(660107, 660110)
 Extremely large magnetoresistance is realized in the nonmagnetic layeredmetal PdCoO2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 35000, '%', 1]

In
###Extremely Large Magnetoresistance in the Nonmagnetic Metal PdCoO2|Hiroshi Takatsu,Jun J. Ishikawa,Shingo Yonezawa,Harukazu Yoshino,Tatsuya Shishidou,Tamio Oguchi,Keizo Murata,Yoshiteru Maeno###
(660113, 660113)
 In spite of a highly conducting metallic behavior with a simplequasi-two-dimensional hexagonal Fermi surface, the interlayer resistancereaches up to 35000% for the field along the [1-10] direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 35000, '%', 0]

I
###Parallel field magnetoresistance in topological insulator thin films|C. J. Lin,X. Y. He,J. Liao,X. X. Wang,V. Sacksteder IV,W. M. Yang,T. Guan,Q. M. Zhang,L. Gu,G. Y. Zhang,C. G. Zeng,X. Dai,K. H. Wu,Y. Q. Li###
(660379, 660379)
 We report that the finite thickness of three-dimensional topologicalinsulator (T<missing VAR>I) thin films produces an observable magnetoresistance (MR) inphase coherent transport in parallel magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Se3
###Parallel field magnetoresistance in topological insulator thin films|C. J. Lin,X. Y. He,J. Liao,X. X. Wang,V. Sacksteder IV,W. M. Yang,T. Guan,Q. M. Zhang,L. Gu,G. Y. Zhang,C. G. Zeng,X. Dai,K. H. Wu,Y. Q. Li###
(660426, 660429)
 The MR data of Bi2Se3 and(Bi,Sb)2Te3 thin films are compared with existing theoretical models ofparallel field magnetotransport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi
###Parallel field magnetoresistance in topological insulator thin films|C. J. Lin,X. Y. He,J. Liao,X. X. Wang,V. Sacksteder IV,W. M. Yang,T. Guan,Q. M. Zhang,L. Gu,G. Y. Zhang,C. G. Zeng,X. Dai,K. H. Wu,Y. Q. Li###
(660435, 660435)
 The MR data of Bi2Se3 and(Bi,Sb)2Te3 thin films are compared with existing theoretical models ofparallel field magnetotransport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sb
###Parallel field magnetoresistance in topological insulator thin films|C. J. Lin,X. Y. He,J. Liao,X. X. Wang,V. Sacksteder IV,W. M. Yang,T. Guan,Q. M. Zhang,L. Gu,G. Y. Zhang,C. G. Zeng,X. Dai,K. H. Wu,Y. Q. Li###
(660437, 660437)
 The MR data of Bi2Se3 and(Bi,Sb)2Te3 thin films are compared with existing theoretical models ofparallel field magnetotransport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Te3
###Parallel field magnetoresistance in topological insulator thin films|C. J. Lin,X. Y. He,J. Liao,X. X. Wang,V. Sacksteder IV,W. M. Yang,T. Guan,Q. M. Zhang,L. Gu,G. Y. Zhang,C. G. Zeng,X. Dai,K. H. Wu,Y. Q. Li###
(660440, 660441)
 The MR data of Bi2Se3 and(Bi,Sb)2Te3 thin films are compared with existing theoretical models ofparallel field magnetotransport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Parallel field magnetoresistance in topological insulator thin films|C. J. Lin,X. Y. He,J. Liao,X. X. Wang,V. Sacksteder IV,W. M. Yang,T. Guan,Q. M. Zhang,L. Gu,G. Y. Zhang,C. G. Zeng,X. Dai,K. H. Wu,Y. Q. Li###
(660478, 660478)
 We conclude that the T<missing VAR>I thin films bringparallel field transport into a unique regime in which the coupling of surfacestates to bulk and to opposite surfaces is indispensable for understanding theobserved MR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Parallel field magnetoresistance in topological insulator thin films|C. J. Lin,X. Y. He,J. Liao,X. X. Wang,V. Sacksteder IV,W. M. Yang,T. Guan,Q. M. Zhang,L. Gu,G. Y. Zhang,C. G. Zeng,X. Dai,K. H. Wu,Y. Q. Li###
(660584, 660584)
 The beta parameter extracted from parallel field MR can inprinciple provide a figure of merit for searching T<missing VAR>I compounds with moreinsulating bulk than existing materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Micromagnetic study of electrical-field-assisted magnetization switching in MTJ devices|M. Carpentieri,R. Tomasello,M. Ricci,P. Burrascano,G. Finocchio###
(661119, 661120)
 Perpendicular MgO-based Magnetic Tunnel Junctions are optimal candidates asbuilding block of Spin Transfer Torque (STT) magnetoresistive memories.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 106, 'A', 1],[109.0, 11, ',', 5],[116.0, -68, ',', 5]

S
###Micromagnetic study of electrical-field-assisted magnetization switching in MTJ devices|M. Carpentieri,R. Tomasello,M. Ricci,P. Burrascano,G. Finocchio###
(661152, 661152)
 Perpendicular MgO-based Magnetic Tunnel Junctions are optimal candidates asbuilding block of Spin Transfer Torque (STT) magnetoresistive memories.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 106, 'A', 1],[77.0, 11, ',', 5],[84.0, -68, ',', 5]

S
###Micromagnetic study of electrical-field-assisted magnetization switching in MTJ devices|M. Carpentieri,R. Tomasello,M. Ricci,P. Burrascano,G. Finocchio###
(661177, 661177)
However, up to now, the only STT is not enough to achieve switching currentdensity below 106 A/cm2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 106, 'A', 0],[52.0, 11, ',', 4],[59.0, -68, ',', 4]

Sr2
###Emergent Transition for Superconducting Fluctuations in Antiferromagnetic Ruthenocuprates|A. C. Mclaughlin,J. P. Attfield###
(661448, 661449)
 The emergence of carrier-pairing from the electronically inhomogeneous phaseof lightly hole-doped copper oxides has been investigated throughmagnetoresistance measurements on 1222-type ruthenocupratesRuSr2(R<missing VAR>,Ce)2Cu2O10-d, principally with R<missing VAR>  Gd, Sm, Nd.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 0.0084, ',', 1]

Ce
###Emergent Transition for Superconducting Fluctuations in Antiferromagnetic Ruthenocuprates|A. C. Mclaughlin,J. P. Attfield###
(661453, 661453)
 The emergence of carrier-pairing from the electronically inhomogeneous phaseof lightly hole-doped copper oxides has been investigated throughmagnetoresistance measurements on 1222-type ruthenocupratesRuSr2(R<missing VAR>,Ce)2Cu2O10-d, principally with R<missing VAR>  Gd, Sm, Nd.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 0.0084, ',', 1]

Cu2O10-d
###Emergent Transition for Superconducting Fluctuations in Antiferromagnetic Ruthenocuprates|A. C. Mclaughlin,J. P. Attfield###
(661456, 661461)
 The emergence of carrier-pairing from the electronically inhomogeneous phaseof lightly hole-doped copper oxides has been investigated throughmagnetoresistance measurements on 1222-type ruthenocupratesRuSr2(R<missing VAR>,Ce)2Cu2O10-d, principally with R<missing VAR>  Gd, Sm, Nd.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[59.0, 0.0084, ',', 1]

Gd
###Emergent Transition for Superconducting Fluctuations in Antiferromagnetic Ruthenocuprates|A. C. Mclaughlin,J. P. Attfield###
(661471, 661471)
 The emergence of carrier-pairing from the electronically inhomogeneous phaseof lightly hole-doped copper oxides has been investigated throughmagnetoresistance measurements on 1222-type ruthenocupratesRuSr2(R<missing VAR>,Ce)2Cu2O10-d, principally with R<missing VAR>  Gd, Sm, Nd.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 0.0084, ',', 1]

Sm
###Emergent Transition for Superconducting Fluctuations in Antiferromagnetic Ruthenocuprates|A. C. Mclaughlin,J. P. Attfield###
(661474, 661474)
 The emergence of carrier-pairing from the electronically inhomogeneous phaseof lightly hole-doped copper oxides has been investigated throughmagnetoresistance measurements on 1222-type ruthenocupratesRuSr2(R<missing VAR>,Ce)2Cu2O10-d, principally with R<missing VAR>  Gd, Sm, Nd.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 0.0084, ',', 1]

Nd
###Emergent Transition for Superconducting Fluctuations in Antiferromagnetic Ruthenocuprates|A. C. Mclaughlin,J. P. Attfield###
(661477, 661477)
 The emergence of carrier-pairing from the electronically inhomogeneous phaseof lightly hole-doped copper oxides has been investigated throughmagnetoresistance measurements on 1222-type ruthenocupratesRuSr2(R<missing VAR>,Ce)2Cu2O10-d, principally with R<missing VAR>  Gd, Sm, Nd.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 0.0084, ',', 1]

Ni80Fe20/Fe50Mn50
###Cooperative Multiscale Aging in a Ferromagnet/Antiferromagnet Bilayer|Sergei Urazhdin###
(661657, 661665)
 We utilize anisotropic magnetoresistance to study temporal evolution of themagnetization state in epitaxial Ni80Fe20/Fe50Mn50ferromagnet/antiferromagnet bilayers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Nb
###Surface superconductivity as the primary cause of broadening of superconducting transition in Nb-films|A. Zeinali,V. M. Krasnov###
(661883, 661883)
Surface superconductivity as the primary cause of broadening of superconducting transition in Nb-films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 0, ',', 2],[117.0, 1.7, 'Hc', 2]

Nb
###Surface superconductivity as the primary cause of broadening of superconducting transition in Nb-films|A. Zeinali,V. M. Krasnov###
(661911, 661911)
 We study the origin of broadening of superconducting transition in sputteredNb films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 0, ',', 1],[89.0, 1.7, 'Hc', 1]

Rn
###Surface superconductivity as the primary cause of broadening of superconducting transition in Nb-films|A. Zeinali,V. M. Krasnov###
(661972, 661972)
 From simultaneous tunneling and transport measurements we concludethat the upper critical field Hc2 always corresponds to the bottom oftransition R<missing VAR>0, while the top R<missing VAR>Rn occurs close to the critical field fordestruction of surface superconductivity Hc3  1.7 Hc2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 0, ',', 0],[28.0, 1.7, 'Hc', 0]

H
###Surface superconductivity as the primary cause of broadening of superconducting transition in Nb-films|A. Zeinali,V. M. Krasnov###
(662019, 662019)
 The two-dimensionalnature of superconductivity at H>Hc2 is confirmed by cusp-like angulardependence of magnetoresistance.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 0, ',', 1],[19.0, 1.7, 'Hc', 1]

CaMnBi2
###Interlayer electronic transport in CaMnBi$_{2}$ antiferromagnet|Aifeng Wang,D. Graf,Lijun Wu,Kefeng Wang,E. Bozin,Yimei Zhu,C. Petrovic###
(662107, 662110)
Interlayer electronic transport in CaMnBi2 antiferromagnet.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CaMnBi2
###Interlayer electronic transport in CaMnBi$_{2}$ antiferromagnet|Aifeng Wang,D. Graf,Lijun Wu,Kefeng Wang,E. Bozin,Yimei Zhu,C. Petrovic###
(662127, 662130)
 We report interlayer electronic transport in CaMnBi2 single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrMnBi2
###Interlayer electronic transport in CaMnBi$_{2}$ antiferromagnet|Aifeng Wang,D. Graf,Lijun Wu,Kefeng Wang,E. Bozin,Yimei Zhu,C. Petrovic###
(662240, 662243)
 Similar to SrMnBi2 that features an anisotropic Dirac cone,our results suggest that magnetic field-induced changes in the interlayerconduction are also present in layered bismuth-based materials with zero-energyline in momentum space created by the staggered alkaline earth atoms.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

U
###Large Unidirectional Magnetoresistance in a Magnetic Topological Insulator|K. Yasuda,A. Tsukazaki,R. Yoshimi,K. S. Takahashi,M. Kawasaki,Y. Tokura###
(662373, 662373)
 We report current-direction dependent or unidirectional magnetoresistance(UMR) in magnetic/nonmagnetic topological insulator (T<missing VAR>I) heterostructures,Crx<missing VAR>(Bi1-ySby)2-x<missing VAR>Te3/(Bi1-ySby)2Te3, that isseveral orders of magnitude larger than in other reported systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Large Unidirectional Magnetoresistance in a Magnetic Topological Insulator|K. Yasuda,A. Tsukazaki,R. Yoshimi,K. S. Takahashi,M. Kawasaki,Y. Tokura###
(662390, 662390)
 We report current-direction dependent or unidirectional magnetoresistance(UMR) in magnetic/nonmagnetic topological insulator (T<missing VAR>I) heterostructures,Crx<missing VAR>(Bi1-ySby)2-x<missing VAR>Te3/(Bi1-ySby)2Te3, that isseveral orders of magnitude larger than in other reported systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr
###Large Unidirectional Magnetoresistance in a Magnetic Topological Insulator|K. Yasuda,A. Tsukazaki,R. Yoshimi,K. S. Takahashi,M. Kawasaki,Y. Tokura###
(662397, 662397)
 We report current-direction dependent or unidirectional magnetoresistance(UMR) in magnetic/nonmagnetic topological insulator (T<missing VAR>I) heterostructures,Crx<missing VAR>(Bi1-ySby)2-x<missing VAR>Te3/(Bi1-ySby)2Te3, that isseveral orders of magnitude larger than in other reported systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi1-ySb
###Large Unidirectional Magnetoresistance in a Magnetic Topological Insulator|K. Yasuda,A. Tsukazaki,R. Yoshimi,K. S. Takahashi,M. Kawasaki,Y. Tokura###
(662400, 662404)
 We report current-direction dependent or unidirectional magnetoresistance(UMR) in magnetic/nonmagnetic topological insulator (T<missing VAR>I) heterostructures,Crx<missing VAR>(Bi1-ySby)2-x<missing VAR>Te3/(Bi1-ySby)2Te3, that isseveral orders of magnitude larger than in other reported systems.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

Bi1-ySb
###Large Unidirectional Magnetoresistance in a Magnetic Topological Insulator|K. Yasuda,A. Tsukazaki,R. Yoshimi,K. S. Takahashi,M. Kawasaki,Y. Tokura###
(662414, 662418)
 We report current-direction dependent or unidirectional magnetoresistance(UMR) in magnetic/nonmagnetic topological insulator (T<missing VAR>I) heterostructures,Crx<missing VAR>(Bi1-ySby)2-x<missing VAR>Te3/(Bi1-ySby)2Te3, that isseveral orders of magnitude larger than in other reported systems.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

Te3
###Large Unidirectional Magnetoresistance in a Magnetic Topological Insulator|K. Yasuda,A. Tsukazaki,R. Yoshimi,K. S. Takahashi,M. Kawasaki,Y. Tokura###
(662422, 662423)
 We report current-direction dependent or unidirectional magnetoresistance(UMR) in magnetic/nonmagnetic topological insulator (T<missing VAR>I) heterostructures,Crx<missing VAR>(Bi1-ySby)2-x<missing VAR>Te3/(Bi1-ySby)2Te3, that isseveral orders of magnitude larger than in other reported systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

U
###Large Unidirectional Magnetoresistance in a Magnetic Topological Insulator|K. Yasuda,A. Tsukazaki,R. Yoshimi,K. S. Takahashi,M. Kawasaki,Y. Tokura###
(662470, 662470)
 From themagnetic field and temperature dependence, the UMR is identified to originatefrom the asymmetric scattering of electrons by magnons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Large Unidirectional Magnetoresistance in a Magnetic Topological Insulator|K. Yasuda,A. Tsukazaki,R. Yoshimi,K. S. Takahashi,M. Kawasaki,Y. Tokura###
(662500, 662500)
 In particular, thelarge magnitude of UMR is an outcome of spin-momentum locking and a small Fermiwavenumber at the surface of T<missing VAR>I.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

U
###Large Unidirectional Magnetoresistance in a Magnetic Topological Insulator|K. Yasuda,A. Tsukazaki,R. Yoshimi,K. S. Takahashi,M. Kawasaki,Y. Tokura###
(662514, 662514)
 In particular, thelarge magnitude of UMR is an outcome of spin-momentum locking and a small Fermiwavenumber at the surface of T<missing VAR>I.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Large Unidirectional Magnetoresistance in a Magnetic Topological Insulator|K. Yasuda,A. Tsukazaki,R. Yoshimi,K. S. Takahashi,M. Kawasaki,Y. Tokura###
(662552, 662552)
 In particular, thelarge magnitude of UMR is an outcome of spin-momentum locking and a small Fermiwavenumber at the surface of T<missing VAR>I.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Large Unidirectional Magnetoresistance in a Magnetic Topological Insulator|K. Yasuda,A. Tsukazaki,R. Yoshimi,K. S. Takahashi,M. Kawasaki,Y. Tokura###
(662555, 662555)
 In fact, the UMR is maximized around the Diracpoint with the minimal Fermi wavenumber.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

U
###Large Unidirectional Magnetoresistance in a Magnetic Topological Insulator|K. Yasuda,A. Tsukazaki,R. Yoshimi,K. S. Takahashi,M. Kawasaki,Y. Tokura###
(662562, 662562)
 In fact, the UMR is maximized around the Diracpoint with the minimal Fermi wavenumber.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

UCoGe
###Lifshitz Transitions in the Ferromagnetic Superconductor UCoGe|Gaël Bastien,Adrien Gourgout,Dai Aoki,Alexandre Pourret,Ilya Sheikin,Gabriel Seyfarth,Jacques Flouquet,Georg Knebel###
(662867, 662869)
Lifshitz Transitions in the Ferromagnetic Superconductor UCoGe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[100.0, 4, ',', 3],[103.0, 9, ',', 3],[106.0, 12, ',', 3],[109.0, 16, ',', 3]

UCoGe
###Lifshitz Transitions in the Ferromagnetic Superconductor UCoGe|Gaël Bastien,Adrien Gourgout,Dai Aoki,Alexandre Pourret,Ilya Sheikin,Gabriel Seyfarth,Jacques Flouquet,Georg Knebel###
(662906, 662908)
 We present high field magnetoresistance, Hall effect and thermopowermeasurements in the Ising-type ferromagnetic superconductor UCoGe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[61.0, 4, ',', 2],[64.0, 9, ',', 2],[67.0, 12, ',', 2],[70.0, 16, ',', 2]

In
###Lifshitz Transitions in the Ferromagnetic Superconductor UCoGe|Gaël Bastien,Adrien Gourgout,Dai Aoki,Alexandre Pourret,Ilya Sheikin,Gabriel Seyfarth,Jacques Flouquet,Georg Knebel###
(662942, 662942)
 In the different experimental probes we observed five successiveanomalies at H approx 4, 9, 12, 16, and 21T<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 4, ',', 0],[30.0, 9, ',', 0],[33.0, 12, ',', 0],[36.0, 16, ',', 0]

H
###Lifshitz Transitions in the Ferromagnetic Superconductor UCoGe|Gaël Bastien,Adrien Gourgout,Dai Aoki,Alexandre Pourret,Ilya Sheikin,Gabriel Seyfarth,Jacques Flouquet,Georg Knebel###
(662965, 662965)
 In the different experimental probes we observed five successiveanomalies at H approx 4, 9, 12, 16, and 21T<missing VAR>.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 4, ',', 0],[7.0, 9, ',', 0],[10.0, 12, ',', 0],[13.0, 16, ',', 0]

At
###Lifshitz Transitions in the Ferromagnetic Superconductor UCoGe|Gaël Bastien,Adrien Gourgout,Dai Aoki,Alexandre Pourret,Ilya Sheikin,Gabriel Seyfarth,Jacques Flouquet,Georg Knebel###
(663011, 663011)
 At most of theanomalies, significant changes of the oscillation frequencies and the effectivemasses have been observed indicating successive Fermi surface instabilitiesinduced by the strong magnetic polarization under magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 4, ',', 2],[39.0, 9, ',', 2],[36.0, 12, ',', 2],[33.0, 16, ',', 2]

In
###Ballistic Anisotropic Magnetoresistance in Core Shell Nanowires and Rolled-up Nanotubes|Ching Hao Chang,Carmine Ortix###
(663111, 663111)
 In ferromagnetic nanostructures, the ballistic anisotropic magnetoresistance(BAMR) is a change in the ballistic conductance with the direction ofmagnetization due to spin-orbit interaction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Ballistic Anisotropic Magnetoresistance in Core Shell Nanowires and Rolled-up Nanotubes|Ching Hao Chang,Carmine Ortix###
(663128, 663128)
 In ferromagnetic nanostructures, the ballistic anisotropic magnetoresistance(BAMR) is a change in the ballistic conductance with the direction ofmagnetization due to spin-orbit interaction.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Ballistic Anisotropic Magnetoresistance in Core Shell Nanowires and Rolled-up Nanotubes|Ching Hao Chang,Carmine Ortix###
(663241, 663241)
In this article, we review past works on the prediction of this BAMR effect incore-shell nanowires and rolled-up nanotubes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Ballistic Anisotropic Magnetoresistance in Core Shell Nanowires and Rolled-up Nanotubes|Ching Hao Chang,Carmine Ortix###
(663266, 663266)
In this article, we review past works on the prediction of this BAMR effect incore-shell nanowires and rolled-up nanotubes.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ta4Pd3Te16
###Pressure induced change in the electronic state of Ta$_4$Pd$_3$Te$_{16}$|Na Hyun Jo,Li Xiang,Udhara S. Kaluarachchi,Morgan Masters,Kathryn Neilson,Savannah S. Downing,Paul C. Canfield,Sergey L. Bud'ko###
(663574, 663579)
Pressure induced change in the electronic state of Ta4Pd3Te16.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13043478260869565,0,0,0,0,0,0.6956521739130435,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.17391304347826086,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 16.4, 'kbar', 1]

Ta4Pd3Te16
###Pressure induced change in the electronic state of Ta$_4$Pd$_3$Te$_{16}$|Na Hyun Jo,Li Xiang,Udhara S. Kaluarachchi,Morgan Masters,Kathryn Neilson,Savannah S. Downing,Paul C. Canfield,Sergey L. Bud'ko###
(663622, 663627)
 We present measurements of superconducting transition temperature,resistivity, magnetoresistivity and temperature dependence of the uppercritical field of Ta4Pd3Te16 under pressures up to 16.4 kbar.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13043478260869565,0,0,0,0,0,0.6956521739130435,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.17391304347826086,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 16.4, 'kbar', 0]

H
###Pressure induced change in the electronic state of Ta$_4$Pd$_3$Te$_{16}$|Na Hyun Jo,Li Xiang,Udhara S. Kaluarachchi,Morgan Masters,Kathryn Neilson,Savannah S. Downing,Paul C. Canfield,Sergey L. Bud'ko###
(663696, 663696)
 Allmeasured properties have an anomaly at sim 2 - 4 kbar pressure range, inparticular there is a maximum in Tc and upper critical field, Hc<missing VAR>2(0),and minimum in low temperature, normal state resistivity.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 16.4, 'kbar', 1]

TiO2
###Large polaron evolution in anatase TiO2 due to carrier and temperature dependence of electron-phonon coupling|B. X. Yan,D. Y. Wan,X. Chi,C. J. Li,M. R. Motapothula,S. Hooda,P. Yang,Z. Huang,S. W. Zeng,A. Gadekar,S. J. Pennycook,A. Rusydi,Ariando,J. Martin,T. Venkatesan###
(663783, 663785)
Large polaron evolution in anatase TiO2 due to carrier and temperature dependence of electron-phonon coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TiO2
###Large polaron evolution in anatase TiO2 due to carrier and temperature dependence of electron-phonon coupling|B. X. Yan,D. Y. Wan,X. Chi,C. J. Li,M. R. Motapothula,S. Hooda,P. Yang,Z. Huang,S. W. Zeng,A. Gadekar,S. J. Pennycook,A. Rusydi,Ariando,J. Martin,T. Venkatesan###
(663826, 663828)
 The electronic and magneto transport properties of reduced anatase TiO2epitaxial thin films are analyzed considering various polaronic effects.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/MgO/Fe
###Effect of Image Potential on Spin Polarized Transport through Magnetic Tunnel Junctions|Tehseen Zahra Raza,Hassan Raza###
(664109, 664114)
 We study the effect of image potential on spin polarized transport throughFe/MgO/Fe magnetic tunnel junctions in the presence of symmetry filtering.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

ZrB2
###Extremely large magnetoresistance and high-density Dirac-like fermions in ZrB2|Qi Wang,Peng-Jie Guo,Shanshan Sun,Chenghe Li,Kai Liu,Zhong-Yi Lu,Hechang Lei###
(664316, 664318)
Extremely large magnetoresistance and high-density Dirac-like fermions in ZrB2.
Featurization terminated normally.
0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZrB2
###Extremely large magnetoresistance and high-density Dirac-like fermions in ZrB2|Qi Wang,Peng-Jie Guo,Shanshan Sun,Chenghe Li,Kai Liu,Zhong-Yi Lu,Hechang Lei###
(664339, 664341)
 We report the detailed study on transport properties of ZrB2 single crystal,a predicted topological nodal-line semimetal.
Featurization terminated normally.
0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZrB2
###Extremely large magnetoresistance and high-density Dirac-like fermions in ZrB2|Qi Wang,Peng-Jie Guo,Shanshan Sun,Chenghe Li,Kai Liu,Zhong-Yi Lu,Hechang Lei###
(664362, 664364)
 ZrB2 exhibits extremely largemagnetoresistance as well as field-induced resistivity upturn and plateau.
Featurization terminated normally.
0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZrB2
###Extremely large magnetoresistance and high-density Dirac-like fermions in ZrB2|Qi Wang,Peng-Jie Guo,Shanshan Sun,Chenghe Li,Kai Liu,Zhong-Yi Lu,Hechang Lei###
(664502, 664504)
 It strongly suggests that ZrB2 hosts Dirac-like nodal-linefermions.
Featurization terminated normally.
0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Magnetoresistance based determination of basic parameters of minority charge carriers in solid matter|Y. O. Uhryn,R. M. Peleshchak,V. B. Brytan,A. A. Velchenko###
(664659, 664659)
 As examples of these equations usage the conductor,semiconductor and superconductor have been introduced.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Interfacial exchange coupling induced chiral symmetry-breaking of Spin-Orbit effects|P. Perna,F. Ajejas,D. Maccariello,J. L. Fernandez Cuñado,R. Guerrero,M. A. Niño,A. Bollero,R. Miranda,J. Camarero###
(664808, 664808)
 We demonstrate that the interfacial exchange coupling inferromagnetic/antiferromagnetic (FM<missing VAR>/AFM) systems induces symmetry-breaking ofthe Spin-Orbit (SO) effects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Interfacial exchange coupling induced chiral symmetry-breaking of Spin-Orbit effects|P. Perna,F. Ajejas,D. Maccariello,J. L. Fernandez Cuñado,R. Guerrero,M. A. Niño,A. Bollero,R. Miranda,J. Camarero###
(664812, 664812)
 We demonstrate that the interfacial exchange coupling inferromagnetic/antiferromagnetic (FM<missing VAR>/AFM) systems induces symmetry-breaking ofthe Spin-Orbit (SO) effects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(SO)
###Interfacial exchange coupling induced chiral symmetry-breaking of Spin-Orbit effects|P. Perna,F. Ajejas,D. Maccariello,J. L. Fernandez Cuñado,R. Guerrero,M. A. Niño,A. Bollero,R. Miranda,J. Camarero###
(664833, 664836)
 We demonstrate that the interfacial exchange coupling inferromagnetic/antiferromagnetic (FM<missing VAR>/AFM) systems induces symmetry-breaking ofthe Spin-Orbit (SO) effects.
Featurization successful!
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Interfacial exchange coupling induced chiral symmetry-breaking of Spin-Orbit effects|P. Perna,F. Ajejas,D. Maccariello,J. L. Fernandez Cuñado,R. Guerrero,M. A. Niño,A. Bollero,R. Miranda,J. Camarero###
(664919, 664919)
 We show how the induced unidirectional magneticanisotropy at the FM<missing VAR>/AFM<missing VAR> interface results in strong asymmetric transportbehaviors, which are chiral around the magnetization hard-axis direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Interfacial exchange coupling induced chiral symmetry-breaking of Spin-Orbit effects|P. Perna,F. Ajejas,D. Maccariello,J. L. Fernandez Cuñado,R. Guerrero,M. A. Niño,A. Bollero,R. Miranda,J. Camarero###
(664923, 664923)
 We show how the induced unidirectional magneticanisotropy at the FM<missing VAR>/AFM<missing VAR> interface results in strong asymmetric transportbehaviors, which are chiral around the magnetization hard-axis direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Interfacial exchange coupling induced chiral symmetry-breaking of Spin-Orbit effects|P. Perna,F. Ajejas,D. Maccariello,J. L. Fernandez Cuñado,R. Guerrero,M. A. Niño,A. Bollero,R. Miranda,J. Camarero###
(664976, 664977)
Similar asymmetric features are anticipated in other SO-driven phenomena.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoTeB2
###Prediction of Extraordinary Magnetoresistance in Janus Monolayer MoTeB2|Shijun Yuan,Hui Ding,Jinlan Wang,Zhongfang Chen###
(665006, 665009)
Prediction of Extraordinary Magnetoresistance in Janus Monolayer MoTeB2.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoTeB2
###Prediction of Extraordinary Magnetoresistance in Janus Monolayer MoTeB2|Shijun Yuan,Hui Ding,Jinlan Wang,Zhongfang Chen###
(665054, 665057)
 Based on first-principles calculations, we studied the geometricconfiguration, stability and electronic structure of the two-dimensional JanusMoTeB2.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoTeB2
###Prediction of Extraordinary Magnetoresistance in Janus Monolayer MoTeB2|Shijun Yuan,Hui Ding,Jinlan Wang,Zhongfang Chen###
(665062, 665065)
 The MoTeB2 monolayer is semimetal, and its attractive electronicstructure reveals the perfect electron-hole compensation.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoTeB2
###Prediction of Extraordinary Magnetoresistance in Janus Monolayer MoTeB2|Shijun Yuan,Hui Ding,Jinlan Wang,Zhongfang Chen###
(665120, 665123)
 Moreover, theelectron-type and hole-type bands of the MoTeB2 monolayer are easily adjustableby external stain and charge doping, such as the switch of carrier polarity bycharge doping, and the metal-semiconductor transition under tensile stain.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoTeB2
###Prediction of Extraordinary Magnetoresistance in Janus Monolayer MoTeB2|Shijun Yuan,Hui Ding,Jinlan Wang,Zhongfang Chen###
(665195, 665198)
These properties allow the MoTeB2 monolayer to be a controllabletwo-dimensional material with extraordinary large magnetoresistance in magneticfield.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Antiferromagnetic Single-layer Spin-Orbit Torque Oscillators|Roberto E. Troncoso,Karsten Rode,Plamen Stamenov,J. Michael D. Coey,Arne Brataas###
(665410, 665410)
 The anisotropicmagnetoresistance causes the conversion of the resulting AF oscillations to aterahertz AC output voltage.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Antiferromagnetic Single-layer Spin-Orbit Torque Oscillators|Roberto E. Troncoso,Karsten Rode,Plamen Stamenov,J. Michael D. Coey,Arne Brataas###
(665422, 665422)
 The anisotropicmagnetoresistance causes the conversion of the resulting AF oscillations to aterahertz AC output voltage.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Engineering magnetoresistance: A new perspective|Moumita Patra,Santanu K. Maiti,Shreekantha Sil###
(665553, 665553)
 A new proposal is given to achieve high degree of magnetoresistance (MR) in amagnetic quantum device where two magnetic layers are separated by anon-magnetic (NM) quasiperiodic layer that acts as a spacer.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Engineering magnetoresistance: A new perspective|Moumita Patra,Santanu K. Maiti,Shreekantha Sil###
(665574, 665574)
 The NM<missing VAR> spacer ischosen in the form of well-known Aubry-Andre<missing VAR> or Harper (AAH) model whichessentially gives the non-trivial features in MR due to its gaped spectrum andyields the opportunities of controlling MR selectively by tuning the AAH phaseexternally.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Engineering magnetoresistance: A new perspective|Moumita Patra,Santanu K. Maiti,Shreekantha Sil###
(665608, 665608)
 The NM<missing VAR> spacer ischosen in the form of well-known Aubry-Andre<missing VAR> or Harper (AAH) model whichessentially gives the non-trivial features in MR due to its gaped spectrum andyields the opportunities of controlling MR selectively by tuning the AAH phaseexternally.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Engineering magnetoresistance: A new perspective|Moumita Patra,Santanu K. Maiti,Shreekantha Sil###
(665669, 665669)
 The NM<missing VAR> spacer ischosen in the form of well-known Aubry-Andre<missing VAR> or Harper (AAH) model whichessentially gives the non-trivial features in MR due to its gaped spectrum andyields the opportunities of controlling MR selectively by tuning the AAH phaseexternally.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Bilayer splitting and c-axis coupling in bilayer manganites showing colossal magnetoresistance|C. Jozwiak,J. Graf,S. Y. Zhou,A. Bostwick,Eli Rotenberg,H. Zheng,J. F. Mitchell,A. Lanzara###
(665791, 665791)
 By performing angle-resolved photoemission spectroscopy of the bilayercolossal magnetoresistive (CMR) manganite, La2-2x<missing VAR>Sr12x<missing VAR>Mn2O7, weprovide the complete mapping of the Fermi level spectral weight topology.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 3, 'd', 1],[100.0, 3, 'd', 1]

La2
###Bilayer splitting and c-axis coupling in bilayer manganites showing colossal magnetoresistance|C. Jozwiak,J. Graf,S. Y. Zhou,A. Bostwick,Eli Rotenberg,H. Zheng,J. F. Mitchell,A. Lanzara###
(665799, 665800)
 By performing angle-resolved photoemission spectroscopy of the bilayercolossal magnetoresistive (CMR) manganite, La2-2x<missing VAR>Sr12x<missing VAR>Mn2O7, weprovide the complete mapping of the Fermi level spectral weight topology.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 3, 'd', 1],[91.0, 3, 'd', 1]

Sr12
###Bilayer splitting and c-axis coupling in bilayer manganites showing colossal magnetoresistance|C. Jozwiak,J. Graf,S. Y. Zhou,A. Bostwick,Eli Rotenberg,H. Zheng,J. F. Mitchell,A. Lanzara###
(665804, 665806)
 By performing angle-resolved photoemission spectroscopy of the bilayercolossal magnetoresistive (CMR) manganite, La2-2x<missing VAR>Sr12x<missing VAR>Mn2O7, weprovide the complete mapping of the Fermi level spectral weight topology.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 3, 'd', 1],[85.0, 3, 'd', 1]

Mn2O7
###Bilayer splitting and c-axis coupling in bilayer manganites showing colossal magnetoresistance|C. Jozwiak,J. Graf,S. Y. Zhou,A. Bostwick,Eli Rotenberg,H. Zheng,J. F. Mitchell,A. Lanzara###
(665808, 665811)
 By performing angle-resolved photoemission spectroscopy of the bilayercolossal magnetoresistive (CMR) manganite, La2-2x<missing VAR>Sr12x<missing VAR>Mn2O7, weprovide the complete mapping of the Fermi level spectral weight topology.
Featurization terminated normally.
0,0,0,0,0,0,0,0.7777777777777778,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 3, 'd', 1],[80.0, 3, 'd', 1]

C
###Bilayer splitting and c-axis coupling in bilayer manganites showing colossal magnetoresistance|C. Jozwiak,J. Graf,S. Y. Zhou,A. Bostwick,Eli Rotenberg,H. Zheng,J. F. Mitchell,A. Lanzara###
(666025, 666025)
 Theseresults suggest that interplane coupling plays a large role in the CMRtransition.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 3, 'd', 2],[134.0, 3, 'd', 2]

Pb
###Unusual giant magnetoresistance effect in heterojunction structure of ultra-thin single-crystal Pb film on silicon substrate|Jian Wang,Xu-Cun Ma,Yun Qi,Ying-Shuang Fu,Shuai-hua Ji,Li Lu,X. C. Xie,Jin-Feng Jia,Xi Chen,Qi-Kun Xue###
(666065, 666065)
Unusual giant magnetoresistance effect in heterojunction structure of ultra-thin single-crystal Pb film on silicon substrate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pb
###Unusual giant magnetoresistance effect in heterojunction structure of ultra-thin single-crystal Pb film on silicon substrate|Jian Wang,Xu-Cun Ma,Yun Qi,Ying-Shuang Fu,Shuai-hua Ji,Li Lu,X. C. Xie,Jin-Feng Jia,Xi Chen,Qi-Kun Xue###
(666146, 666146)
 By growing atomically uniformsingle-crystal epitaxial Pb films of several nanometers thick on Si wafers toform a sharp superconductor-semiconductor heterojunction, we have obtained anunusual giant magnetoresistance effect when the Pb film is superconducting.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Unusual giant magnetoresistance effect in heterojunction structure of ultra-thin single-crystal Pb film on silicon substrate|Jian Wang,Xu-Cun Ma,Yun Qi,Ying-Shuang Fu,Shuai-hua Ji,Li Lu,X. C. Xie,Jin-Feng Jia,Xi Chen,Qi-Kun Xue###
(666160, 666160)
 By growing atomically uniformsingle-crystal epitaxial Pb films of several nanometers thick on Si wafers toform a sharp superconductor-semiconductor heterojunction, we have obtained anunusual giant magnetoresistance effect when the Pb film is superconducting.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pb
###Unusual giant magnetoresistance effect in heterojunction structure of ultra-thin single-crystal Pb film on silicon substrate|Jian Wang,Xu-Cun Ma,Yun Qi,Ying-Shuang Fu,Shuai-hua Ji,Li Lu,X. C. Xie,Jin-Feng Jia,Xi Chen,Qi-Kun Xue###
(666201, 666201)
 By growing atomically uniformsingle-crystal epitaxial Pb films of several nanometers thick on Si wafers toform a sharp superconductor-semiconductor heterojunction, we have obtained anunusual giant magnetoresistance effect when the Pb film is superconducting.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Unusual giant magnetoresistance effect in heterojunction structure of ultra-thin single-crystal Pb film on silicon substrate|Jian Wang,Xu-Cun Ma,Yun Qi,Ying-Shuang Fu,Shuai-hua Ji,Li Lu,X. C. Xie,Jin-Feng Jia,Xi Chen,Qi-Kun Xue###
(666210, 666210)
 Inaddition to the great fundamental interest of this effect, the simple structureand compatibility and scalability with current Si-based semiconductortechnology offer a great opportunity for integrating superconducting circuitsand detectors in a single chip.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Unusual giant magnetoresistance effect in heterojunction structure of ultra-thin single-crystal Pb film on silicon substrate|Jian Wang,Xu-Cun Ma,Yun Qi,Ying-Shuang Fu,Shuai-hua Ji,Li Lu,X. C. Xie,Jin-Feng Jia,Xi Chen,Qi-Kun Xue###
(666251, 666251)
 Inaddition to the great fundamental interest of this effect, the simple structureand compatibility and scalability with current Si-based semiconductortechnology offer a great opportunity for integrating superconducting circuitsand detectors in a single chip.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CPP
###Effective Resistance Mismatch and Magnetoresistance of a CPP-GMR system with Current-Confined-Paths|Jun Sato,Katsuyoshi Matsushita,Hiroshi Imamura###
(666312, 666314)
Effective Resistance Mismatch and Magnetoresistance of a CPP-GMR system with Current-Confined-Paths.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CPP
###Effective Resistance Mismatch and Magnetoresistance of a CPP-GMR system with Current-Confined-Paths|Jun Sato,Katsuyoshi Matsushita,Hiroshi Imamura###
(666345, 666347)
 We theoretically study the magnetoresistance of a CPP-GMR system with currentconfined paths (CCP) in the framework of Valet-Fert theory.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(CCP)
###Effective Resistance Mismatch and Magnetoresistance of a CPP-GMR system with Current-Confined-Paths|Jun Sato,Katsuyoshi Matsushita,Hiroshi Imamura###
(666364, 666368)
 We theoretically study the magnetoresistance of a CPP-GMR system with currentconfined paths (CCP) in the framework of Valet-Fert theory.
Featurization successful!
0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CCP
###Effective Resistance Mismatch and Magnetoresistance of a CPP-GMR system with Current-Confined-Paths|Jun Sato,Katsuyoshi Matsushita,Hiroshi Imamura###
(666417, 666419)
 The continuityequations for charge and spin currents are numerically solved with thethree-dimensional CCP geometry by use of finite element method.
Featurization terminated normally.
0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CCP
###Effective Resistance Mismatch and Magnetoresistance of a CPP-GMR system with Current-Confined-Paths|Jun Sato,Katsuyoshi Matsushita,Hiroshi Imamura###
(666460, 666462)
 It is confirmedthat the MR ratio is enhanced by the CCP structure, which is consistent withthe experimental results.
Featurization terminated normally.
0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Y1-xPr
###Diverging Giant Magnetoresistance in the Limit of Infinitely Conducting Spacer|Soumen Mandal,R. C. Budhani,Jiaqing He,Y. Zhu###
(666630, 666634)
 The relevance of pair-breaking by exchange and dipolar fields, and byinjected spins in a low carrier density cuprateY1-xPrx<missing VAR>Ba2Cu3O7 sandwiched between two ferromagnetic La2 /3Sr1 / 3MnO3 layers is examined.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

Ba2Cu3O7
###Diverging Giant Magnetoresistance in the Limit of Infinitely Conducting Spacer|Soumen Mandal,R. C. Budhani,Jiaqing He,Y. Zhu###
(666636, 666641)
 The relevance of pair-breaking by exchange and dipolar fields, and byinjected spins in a low carrier density cuprateY1-xPrx<missing VAR>Ba2Cu3O7 sandwiched between two ferromagnetic La2 /3Sr1 / 3MnO3 layers is examined.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La2
###Diverging Giant Magnetoresistance in the Limit of Infinitely Conducting Spacer|Soumen Mandal,R. C. Budhani,Jiaqing He,Y. Zhu###
(666651, 666652)
 The relevance of pair-breaking by exchange and dipolar fields, and byinjected spins in a low carrier density cuprateY1-xPrx<missing VAR>Ba2Cu3O7 sandwiched between two ferromagnetic La2 /3Sr1 / 3MnO3 layers is examined.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr1
###Diverging Giant Magnetoresistance in the Limit of Infinitely Conducting Spacer|Soumen Mandal,R. C. Budhani,Jiaqing He,Y. Zhu###
(666658, 666659)
 The relevance of pair-breaking by exchange and dipolar fields, and byinjected spins in a low carrier density cuprateY1-xPrx<missing VAR>Ba2Cu3O7 sandwiched between two ferromagnetic La2 /3Sr1 / 3MnO3 layers is examined.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnO3
###Diverging Giant Magnetoresistance in the Limit of Infinitely Conducting Spacer|Soumen Mandal,R. C. Budhani,Jiaqing He,Y. Zhu###
(666664, 666666)
 The relevance of pair-breaking by exchange and dipolar fields, and byinjected spins in a low carrier density cuprateY1-xPrx<missing VAR>Ba2Cu3O7 sandwiched between two ferromagnetic La2 /3Sr1 / 3MnO3 layers is examined.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Diverging Giant Magnetoresistance in the Limit of Infinitely Conducting Spacer|Soumen Mandal,R. C. Budhani,Jiaqing He,Y. Zhu###
(666675, 666675)
 At low external field (Hext),the system shows a giant magnetoresistance(MR), which diverges deep in thesuperconducting state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Diverging Giant Magnetoresistance in the Limit of Infinitely Conducting Spacer|Soumen Mandal,R. C. Budhani,Jiaqing He,Y. Zhu###
(666684, 666684)
 At low external field (Hext),the system shows a giant magnetoresistance(MR), which diverges deep in thesuperconducting state.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Diverging Giant Magnetoresistance in the Limit of Infinitely Conducting Spacer|Soumen Mandal,R. C. Budhani,Jiaqing He,Y. Zhu###
(666749, 666749)
 We establish a distinct dipolar contribution to MR nearthe switching field(Hc) of the magnetic layers.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Diverging Giant Magnetoresistance in the Limit of Infinitely Conducting Spacer|Soumen Mandal,R. C. Budhani,Jiaqing He,Y. Zhu###
(666762, 666762)
 At Hext gg Hc<missing VAR>, alarge positive MR, resulting primarily from the motion of Josephson vorticesand pair breaking by the in-plane field, is seen.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Diverging Giant Magnetoresistance in the Limit of Infinitely Conducting Spacer|Soumen Mandal,R. C. Budhani,Jiaqing He,Y. Zhu###
(666764, 666764)
 At Hext gg Hc<missing VAR>, alarge positive MR, resulting primarily from the motion of Josephson vorticesand pair breaking by the in-plane field, is seen.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Diverging Giant Magnetoresistance in the Limit of Infinitely Conducting Spacer|Soumen Mandal,R. C. Budhani,Jiaqing He,Y. Zhu###
(666769, 666769)
 At Hext gg Hc<missing VAR>, alarge positive MR, resulting primarily from the motion of Josephson vorticesand pair breaking by the in-plane field, is seen.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ba
###Coexistence of Dirac-Cone States and Superconductivity in Iron Pnictide Ba(Fe$_{1-x}$Ru$_x$As)$_2$|Y. Tanabe,K. K. Huynh,S. Heguri,G. Mu,T. Urata,J. Xu,R. Nouchi,N. Mitoma,K. Tanigaki###
(667087, 667087)
Coexistence of Dirac-Cone States and Superconductivity in Iron Pnictide Ba(Fe1-xRux<missing VAR>As)2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 0.244, 'at', 2]

Fe1-xRu
###Coexistence of Dirac-Cone States and Superconductivity in Iron Pnictide Ba(Fe$_{1-x}$Ru$_x$As)$_2$|Y. Tanabe,K. K. Huynh,S. Heguri,G. Mu,T. Urata,J. Xu,R. Nouchi,N. Mitoma,K. Tanigaki###
(667089, 667093)
Coexistence of Dirac-Cone States and Superconductivity in Iron Pnictide Ba(Fe1-xRux<missing VAR>As)2.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[109.0, 0.244, 'at', 2]

As
###Coexistence of Dirac-Cone States and Superconductivity in Iron Pnictide Ba(Fe$_{1-x}$Ru$_x$As)$_2$|Y. Tanabe,K. K. Huynh,S. Heguri,G. Mu,T. Urata,J. Xu,R. Nouchi,N. Mitoma,K. Tanigaki###
(667095, 667095)
Coexistence of Dirac-Cone States and Superconductivity in Iron Pnictide Ba(Fe1-xRux<missing VAR>As)2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 0.244, 'at', 2]

Ru
###Coexistence of Dirac-Cone States and Superconductivity in Iron Pnictide Ba(Fe$_{1-x}$Ru$_x$As)$_2$|Y. Tanabe,K. K. Huynh,S. Heguri,G. Mu,T. Urata,J. Xu,R. Nouchi,N. Mitoma,K. Tanigaki###
(667102, 667102)
 The Ru doping effect on the Dirac cone states is investigated in ironpnictide superconductors Ba(Fe1-xRux<missing VAR>As)2 using the transversemagnetoresistance (MR) measurements as a function of temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 0.244, 'at', 1]

Ba
###Coexistence of Dirac-Cone States and Superconductivity in Iron Pnictide Ba(Fe$_{1-x}$Ru$_x$As)$_2$|Y. Tanabe,K. K. Huynh,S. Heguri,G. Mu,T. Urata,J. Xu,R. Nouchi,N. Mitoma,K. Tanigaki###
(667131, 667131)
 The Ru doping effect on the Dirac cone states is investigated in ironpnictide superconductors Ba(Fe1-xRux<missing VAR>As)2 using the transversemagnetoresistance (MR) measurements as a function of temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 0.244, 'at', 1]

Fe1-xRu
###Coexistence of Dirac-Cone States and Superconductivity in Iron Pnictide Ba(Fe$_{1-x}$Ru$_x$As)$_2$|Y. Tanabe,K. K. Huynh,S. Heguri,G. Mu,T. Urata,J. Xu,R. Nouchi,N. Mitoma,K. Tanigaki###
(667133, 667137)
 The Ru doping effect on the Dirac cone states is investigated in ironpnictide superconductors Ba(Fe1-xRux<missing VAR>As)2 using the transversemagnetoresistance (MR) measurements as a function of temperature.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[65.0, 0.244, 'at', 1]

As
###Coexistence of Dirac-Cone States and Superconductivity in Iron Pnictide Ba(Fe$_{1-x}$Ru$_x$As)$_2$|Y. Tanabe,K. K. Huynh,S. Heguri,G. Mu,T. Urata,J. Xu,R. Nouchi,N. Mitoma,K. Tanigaki###
(667139, 667139)
 The Ru doping effect on the Dirac cone states is investigated in ironpnictide superconductors Ba(Fe1-xRux<missing VAR>As)2 using the transversemagnetoresistance (MR) measurements as a function of temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 0.244, 'at', 1]

B
###Coexistence of Dirac-Cone States and Superconductivity in Iron Pnictide Ba(Fe$_{1-x}$Ru$_x$As)$_2$|Y. Tanabe,K. K. Huynh,S. Heguri,G. Mu,T. Urata,J. Xu,R. Nouchi,N. Mitoma,K. Tanigaki###
(667188, 667188)
 The lineardevelopment of MR against magnetic field B is observed for x<missing VAR>  0 - 0.244 atlow temperatures below the antiferromagnetic transition.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 0.244, 'at', 0]

B
###Coexistence of Dirac-Cone States and Superconductivity in Iron Pnictide Ba(Fe$_{1-x}$Ru$_x$As)$_2$|Y. Tanabe,K. K. Huynh,S. Heguri,G. Mu,T. Urata,J. Xu,R. Nouchi,N. Mitoma,K. Tanigaki###
(667220, 667220)
 The B-linear MR isinterpreted in terms of the quantum limit of the Dirac cone states by using themodel proposed by Abrikosov.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 0.244, 'at', 1]

V
###Strong quantum interference in strongly disordered bosonic insulators|S. V. Syzranov,A. Moor,K. B. Efetov###
(667357, 667357)
 We study the variable-range hopping (VR<missing VAR>H) of bosons in an array of sites withshort-range interactions and a large characteristic coordination number.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Strong quantum interference in strongly disordered bosonic insulators|S. V. Syzranov,A. Moor,K. B. Efetov###
(667359, 667359)
 We study the variable-range hopping (VR<missing VAR>H) of bosons in an array of sites withshort-range interactions and a large characteristic coordination number.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ba
###Enhancement of the upper critical field in codoped iron-arsenic high-temperature superconductors|F. Weickert,M. Nicklas,W. Schnelle,J. Wosnitza,A. Leithe-Jasper,H. Rosner###
(667646, 667646)
 We present the first study of codoped iron-arsenide superconductors of the122 family (Sr/Ba)(1-x)Kx<missing VAR>Fe(2-y)Coy<missing VAR>As2 with the purpose to increase theupper critical field Hc<missing VAR>2 compared to single doped (Sr/Ba)Fe2As2 materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 64, 'T', 1],[115.0, 0, 'is', 2],[126.0, 90, 'T', 2]

K
###Enhancement of the upper critical field in codoped iron-arsenic high-temperature superconductors|F. Weickert,M. Nicklas,W. Schnelle,J. Wosnitza,A. Leithe-Jasper,H. Rosner###
(667653, 667653)
 We present the first study of codoped iron-arsenide superconductors of the122 family (Sr/Ba)(1-x)Kx<missing VAR>Fe(2-y)Coy<missing VAR>As2 with the purpose to increase theupper critical field Hc<missing VAR>2 compared to single doped (Sr/Ba)Fe2As2 materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 64, 'T', 1],[108.0, 0, 'is', 2],[119.0, 90, 'T', 2]

Fe(2-y)Co
###Enhancement of the upper critical field in codoped iron-arsenic high-temperature superconductors|F. Weickert,M. Nicklas,W. Schnelle,J. Wosnitza,A. Leithe-Jasper,H. Rosner###
(667655, 667661)
 We present the first study of codoped iron-arsenide superconductors of the122 family (Sr/Ba)(1-x)Kx<missing VAR>Fe(2-y)Coy<missing VAR>As2 with the purpose to increase theupper critical field Hc<missing VAR>2 compared to single doped (Sr/Ba)Fe2As2 materials.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[80.0, 64, 'T', 1],[100.0, 0, 'is', 2],[111.0, 90, 'T', 2]

As2
###Enhancement of the upper critical field in codoped iron-arsenic high-temperature superconductors|F. Weickert,M. Nicklas,W. Schnelle,J. Wosnitza,A. Leithe-Jasper,H. Rosner###
(667663, 667664)
 We present the first study of codoped iron-arsenide superconductors of the122 family (Sr/Ba)(1-x)Kx<missing VAR>Fe(2-y)Coy<missing VAR>As2 with the purpose to increase theupper critical field Hc<missing VAR>2 compared to single doped (Sr/Ba)Fe2As2 materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 64, 'T', 1],[97.0, 0, 'is', 2],[108.0, 90, 'T', 2]

H
###Enhancement of the upper critical field in codoped iron-arsenic high-temperature superconductors|F. Weickert,M. Nicklas,W. Schnelle,J. Wosnitza,A. Leithe-Jasper,H. Rosner###
(667685, 667685)
 We present the first study of codoped iron-arsenide superconductors of the122 family (Sr/Ba)(1-x)Kx<missing VAR>Fe(2-y)Coy<missing VAR>As2 with the purpose to increase theupper critical field Hc<missing VAR>2 compared to single doped (Sr/Ba)Fe2As2 materials.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 64, 'T', 1],[76.0, 0, 'is', 2],[87.0, 90, 'T', 2]

Ba
###Enhancement of the upper critical field in codoped iron-arsenic high-temperature superconductors|F. Weickert,M. Nicklas,W. Schnelle,J. Wosnitza,A. Leithe-Jasper,H. Rosner###
(667700, 667700)
 We present the first study of codoped iron-arsenide superconductors of the122 family (Sr/Ba)(1-x)Kx<missing VAR>Fe(2-y)Coy<missing VAR>As2 with the purpose to increase theupper critical field Hc<missing VAR>2 compared to single doped (Sr/Ba)Fe2As2 materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 64, 'T', 1],[61.0, 0, 'is', 2],[72.0, 90, 'T', 2]

Fe2As2
###Enhancement of the upper critical field in codoped iron-arsenic high-temperature superconductors|F. Weickert,M. Nicklas,W. Schnelle,J. Wosnitza,A. Leithe-Jasper,H. Rosner###
(667702, 667705)
 We present the first study of codoped iron-arsenide superconductors of the122 family (Sr/Ba)(1-x)Kx<missing VAR>Fe(2-y)Coy<missing VAR>As2 with the purpose to increase theupper critical field Hc<missing VAR>2 compared to single doped (Sr/Ba)Fe2As2 materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 64, 'T', 1],[56.0, 0, 'is', 2],[67.0, 90, 'T', 2]

H
###Enhancement of the upper critical field in codoped iron-arsenic high-temperature superconductors|F. Weickert,M. Nicklas,W. Schnelle,J. Wosnitza,A. Leithe-Jasper,H. Rosner###
(667711, 667711)
Hc<missing VAR>2 was investigated by measuring the magnetoresistance in high pulsedmagnetic fields up to 64 T.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 64, 'T', 0],[50.0, 0, 'is', 1],[61.0, 90, 'T', 1]

H
###Enhancement of the upper critical field in codoped iron-arsenic high-temperature superconductors|F. Weickert,M. Nicklas,W. Schnelle,J. Wosnitza,A. Leithe-Jasper,H. Rosner###
(667751, 667751)
 We find, that Hc<missing VAR>2 extrapolated to T<missing VAR>  0 is indeedenhanced significantly to  90 T for polycrystalline samples ofBa0.55K0.45Fe1.95Co0.05As2 compared to 75 T<missing VAR> for Ba0.55K0.45Fe2As2 andBaFe1.8Co0.2As2 single crystals.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 64, 'T', 1],[10.0, 0, 'is', 0],[21.0, 90, 'T', 0]

Ba0.55K0.45Fe1.95Co0.05As2
###Enhancement of the upper critical field in codoped iron-arsenic high-temperature superconductors|F. Weickert,M. Nicklas,W. Schnelle,J. Wosnitza,A. Leithe-Jasper,H. Rosner###
(667783, 667792)
 We find, that Hc<missing VAR>2 extrapolated to T<missing VAR>  0 is indeedenhanced significantly to  90 T for polycrystalline samples ofBa0.55K0.45Fe1.95Co0.05As2 compared to 75 T<missing VAR> for Ba0.55K0.45Fe2As2 andBaFe1.8Co0.2As2 single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.09,0,0,0,0,0,0,0.39,0.01,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.11000000000000001,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 64, 'T', 1],[22.0, 0, 'is', 0],[11.0, 90, 'T', 0]

Ba0.55K0.45Fe2As2
###Enhancement of the upper critical field in codoped iron-arsenic high-temperature superconductors|F. Weickert,M. Nicklas,W. Schnelle,J. Wosnitza,A. Leithe-Jasper,H. Rosner###
(667804, 667811)
 We find, that Hc<missing VAR>2 extrapolated to T<missing VAR>  0 is indeedenhanced significantly to  90 T for polycrystalline samples ofBa0.55K0.45Fe1.95Co0.05As2 compared to 75 T<missing VAR> for Ba0.55K0.45Fe2As2 andBaFe1.8Co0.2As2 single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.09,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.11000000000000001,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 64, 'T', 1],[43.0, 0, 'is', 0],[32.0, 90, 'T', 0]

BaFe1.8Co0.2As2
###Enhancement of the upper critical field in codoped iron-arsenic high-temperature superconductors|F. Weickert,M. Nicklas,W. Schnelle,J. Wosnitza,A. Leithe-Jasper,H. Rosner###
(667816, 667822)
 We find, that Hc<missing VAR>2 extrapolated to T<missing VAR>  0 is indeedenhanced significantly to  90 T for polycrystalline samples ofBa0.55K0.45Fe1.95Co0.05As2 compared to 75 T<missing VAR> for Ba0.55K0.45Fe2As2 andBaFe1.8Co0.2As2 single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.36,0.04,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 64, 'T', 1],[55.0, 0, 'is', 0],[44.0, 90, 'T', 0]

Si
###Influence of anisotropic magnetoresistance on nonlocal signals in Si-based multi-terminal devices with Fe electrodes|Ryosho Nakane,Shoichi Sato,Shun Kokutani,Masaaki Tanaka###
(667900, 667900)
Influence of anisotropic magnetoresistance on nonlocal signals in Si-based multi-terminal devices with Fe electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Influence of anisotropic magnetoresistance on nonlocal signals in Si-based multi-terminal devices with Fe electrodes|Ryosho Nakane,Shoichi Sato,Shun Kokutani,Masaaki Tanaka###
(667912, 667912)
Influence of anisotropic magnetoresistance on nonlocal signals in Si-based multi-terminal devices with Fe electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Influence of anisotropic magnetoresistance on nonlocal signals in Si-based multi-terminal devices with Fe electrodes|Ryosho Nakane,Shoichi Sato,Shun Kokutani,Masaaki Tanaka###
(667948, 667948)
 We have investigated the influence of anisotropic magnetoresistance (AMR) onnonlocal signals in Si-based multi-terminal devices with ferromagnetic Feelectrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Influence of anisotropic magnetoresistance on nonlocal signals in Si-based multi-terminal devices with Fe electrodes|Ryosho Nakane,Shoichi Sato,Shun Kokutani,Masaaki Tanaka###
(667962, 667962)
 We have investigated the influence of anisotropic magnetoresistance (AMR) onnonlocal signals in Si-based multi-terminal devices with ferromagnetic Feelectrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Influence of anisotropic magnetoresistance on nonlocal signals in Si-based multi-terminal devices with Fe electrodes|Ryosho Nakane,Shoichi Sato,Shun Kokutani,Masaaki Tanaka###
(667978, 667978)
 The AMR of the Fe electrodes was found to have a significantinfluence on nonlocal signals when the in-plane device structure is notoptimized.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Influence of anisotropic magnetoresistance on nonlocal signals in Si-based multi-terminal devices with Fe electrodes|Ryosho Nakane,Shoichi Sato,Shun Kokutani,Masaaki Tanaka###
(668082, 668082)
 Moreover, realization of a pure spin current by spin diffusion wasfound to be virtually impossible because of the electric potential distributionin the depth direction in the Si channel.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Al2O3
###Tunnel spin injection into graphene using Al2O3 barrier grown by atomic layer deposition on functionalized graphene surface|Takehiro Yamaguchi,Satoru Masubuchi,Kazuyuki Iguchi,Rai Moriya,Tomoki Machida###
(668174, 668177)
Tunnel spin injection into graphene using Al2O3 barrier grown by atomic layer deposition on functionalized graphene surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 3, ',', 2],[102.0, 4, ',', 2],[104.0, 9, ',', 2],[187.0, 30, 'ohm', 3],[207.0, 45, 'K', 3]

Al2O3
###Tunnel spin injection into graphene using Al2O3 barrier grown by atomic layer deposition on functionalized graphene surface|Takehiro Yamaguchi,Satoru Masubuchi,Kazuyuki Iguchi,Rai Moriya,Tomoki Machida###
(668231, 668234)
 We demonstrate electrical tunnel spin injection from a ferromagnet tographene through a high-quality Al2O3 grown by atomic layer deposition (ALD).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 3, ',', 1],[45.0, 4, ',', 1],[47.0, 9, ',', 1],[130.0, 30, 'ohm', 2],[150.0, 45, 'K', 2]

P
###Tunnel spin injection into graphene using Al2O3 barrier grown by atomic layer deposition on functionalized graphene surface|Takehiro Yamaguchi,Satoru Masubuchi,Kazuyuki Iguchi,Rai Moriya,Tomoki Machida###
(668292, 668292)
The graphene surface is functionalized with a self-assembled monolayer of3,4,9,10-perylene tetracarboxylic acid (PT<missing VAR>CA) to promote adhesion and growth ofAl2O3 with a smooth surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 3, ',', 0],[13.0, 4, ',', 0],[11.0, 9, ',', 0],[72.0, 30, 'ohm', 1],[92.0, 45, 'K', 1]

C
###Tunnel spin injection into graphene using Al2O3 barrier grown by atomic layer deposition on functionalized graphene surface|Takehiro Yamaguchi,Satoru Masubuchi,Kazuyuki Iguchi,Rai Moriya,Tomoki Machida###
(668294, 668294)
The graphene surface is functionalized with a self-assembled monolayer of3,4,9,10-perylene tetracarboxylic acid (PT<missing VAR>CA) to promote adhesion and growth ofAl2O3 with a smooth surface.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 3, ',', 0],[15.0, 4, ',', 0],[13.0, 9, ',', 0],[70.0, 30, 'ohm', 1],[90.0, 45, 'K', 1]

Al2O3
###Tunnel spin injection into graphene using Al2O3 barrier grown by atomic layer deposition on functionalized graphene surface|Takehiro Yamaguchi,Satoru Masubuchi,Kazuyuki Iguchi,Rai Moriya,Tomoki Machida###
(668311, 668314)
The graphene surface is functionalized with a self-assembled monolayer of3,4,9,10-perylene tetracarboxylic acid (PT<missing VAR>CA) to promote adhesion and growth ofAl2O3 with a smooth surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 3, ',', 0],[32.0, 4, ',', 0],[30.0, 9, ',', 0],[50.0, 30, 'ohm', 1],[70.0, 45, 'K', 1]

Al2O3
###Tunnel spin injection into graphene using Al2O3 barrier grown by atomic layer deposition on functionalized graphene surface|Takehiro Yamaguchi,Satoru Masubuchi,Kazuyuki Iguchi,Rai Moriya,Tomoki Machida###
(668341, 668344)
 Using this composite tunnel barrier of ALD-Al2O3and PT<missing VAR>CA, a spin injection signal of 30 ohm has been observed from non-localmagnetoresistance measurements at 45 K, revealing potentially high performanceof ALD-Al2O3/PT<missing VAR>CA tunnel barrier for spin injection into graphene.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 3, ',', 1],[62.0, 4, ',', 1],[60.0, 9, ',', 1],[20.0, 30, 'ohm', 0],[40.0, 45, 'K', 0]

P
###Tunnel spin injection into graphene using Al2O3 barrier grown by atomic layer deposition on functionalized graphene surface|Takehiro Yamaguchi,Satoru Masubuchi,Kazuyuki Iguchi,Rai Moriya,Tomoki Machida###
(668349, 668349)
 Using this composite tunnel barrier of ALD-Al2O3and PT<missing VAR>CA, a spin injection signal of 30 ohm has been observed from non-localmagnetoresistance measurements at 45 K, revealing potentially high performanceof ALD-Al2O3/PT<missing VAR>CA tunnel barrier for spin injection into graphene.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 3, ',', 1],[70.0, 4, ',', 1],[68.0, 9, ',', 1],[15.0, 30, 'ohm', 0],[35.0, 45, 'K', 0]

C
###Tunnel spin injection into graphene using Al2O3 barrier grown by atomic layer deposition on functionalized graphene surface|Takehiro Yamaguchi,Satoru Masubuchi,Kazuyuki Iguchi,Rai Moriya,Tomoki Machida###
(668351, 668351)
 Using this composite tunnel barrier of ALD-Al2O3and PT<missing VAR>CA, a spin injection signal of 30 ohm has been observed from non-localmagnetoresistance measurements at 45 K, revealing potentially high performanceof ALD-Al2O3/PT<missing VAR>CA tunnel barrier for spin injection into graphene.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 3, ',', 1],[72.0, 4, ',', 1],[70.0, 9, ',', 1],[13.0, 30, 'ohm', 0],[33.0, 45, 'K', 0]

Al2O3/P
###Tunnel spin injection into graphene using Al2O3 barrier grown by atomic layer deposition on functionalized graphene surface|Takehiro Yamaguchi,Satoru Masubuchi,Kazuyuki Iguchi,Rai Moriya,Tomoki Machida###
(668402, 668407)
 Using this composite tunnel barrier of ALD-Al2O3and PT<missing VAR>CA, a spin injection signal of 30 ohm has been observed from non-localmagnetoresistance measurements at 45 K, revealing potentially high performanceof ALD-Al2O3/PT<missing VAR>CA tunnel barrier for spin injection into graphene.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[125.0, 3, ',', 1],[123.0, 4, ',', 1],[121.0, 9, ',', 1],[38.0, 30, 'ohm', 0],[18.0, 45, 'K', 0]

C
###Tunnel spin injection into graphene using Al2O3 barrier grown by atomic layer deposition on functionalized graphene surface|Takehiro Yamaguchi,Satoru Masubuchi,Kazuyuki Iguchi,Rai Moriya,Tomoki Machida###
(668409, 668409)
 Using this composite tunnel barrier of ALD-Al2O3and PT<missing VAR>CA, a spin injection signal of 30 ohm has been observed from non-localmagnetoresistance measurements at 45 K, revealing potentially high performanceof ALD-Al2O3/PT<missing VAR>CA tunnel barrier for spin injection into graphene.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 3, ',', 1],[130.0, 4, ',', 1],[128.0, 9, ',', 1],[45.0, 30, 'ohm', 0],[25.0, 45, 'K', 0]

B
###Non-linear transport phenomena in a two-subband system|S. Wiedmann,G. M. Gusev,O. E. Raichev,A. K. Bakarov,J. C. Portal###
(668539, 668539)
 For a moderate direct current excitation, we observezero-differential-resistance states with a characteristic 1/B periodicity.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Controlled formation of high-mobility shallow electron gases in SrTiO3 single crystal|Jung-Won Chang,Joon Sung Lee,Tae Ho Lee,Jinhee Kim,Yong-Joo Doh###
(668673, 668676)
Controlled formation of high-mobility shallow electron gases in SrTiO3 single crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 15, ',', 2]

SrTiO3
###Controlled formation of high-mobility shallow electron gases in SrTiO3 single crystal|Jung-Won Chang,Joon Sung Lee,Tae Ho Lee,Jinhee Kim,Yong-Joo Doh###
(668708, 668711)
 We report controlled formation of sub-100 nm-thin electron channels inSrTiO3 by doping with oxygen vacancies induced by Ar-ion irradiation.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 15, ',', 1]

Ar
###Controlled formation of high-mobility shallow electron gases in SrTiO3 single crystal|Jung-Won Chang,Joon Sung Lee,Tae Ho Lee,Jinhee Kim,Yong-Joo Doh###
(668727, 668727)
 We report controlled formation of sub-100 nm-thin electron channels inSrTiO3 by doping with oxygen vacancies induced by Ar-ion irradiation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 15, ',', 1]

V
###Controlled formation of high-mobility shallow electron gases in SrTiO3 single crystal|Jung-Won Chang,Joon Sung Lee,Tae Ho Lee,Jinhee Kim,Yong-Joo Doh###
(668761, 668761)
The conducting channels exhibit a consistent high electron mobility (15,000cm2V-1s<missing VAR>-1), which enables clear observation of magnetic quantumoscillations, and gate-tunable linear magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 15, ',', 0]

IrMn/MgO/Ta
###Temperature and thickness dependence of tunneling anisotropic magnetoresistance in exchange-biased Py/IrMn/MgO/Ta stacks|H. Reichlova,V. Novak,Y. Kurosaki,M. Yamada,H. Yamamoto,A. Nishide,J. Hayakawa,H. Takahashi,M. Marysko,J. Wunderlich,X. Marti,T. Jungwirth###
(669183, 669189)
Temperature and thickness dependence of tunneling anisotropic magnetoresistance in exchange-biased Py/IrMn/MgO/Ta stacks.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Ni08Fe02/Ir02Mn08
###Temperature and thickness dependence of tunneling anisotropic magnetoresistance in exchange-biased Py/IrMn/MgO/Ta stacks|H. Reichlova,V. Novak,Y. Kurosaki,M. Yamada,H. Yamamoto,A. Nishide,J. Hayakawa,H. Takahashi,M. Marysko,J. Wunderlich,X. Marti,T. Jungwirth###
(669217, 669229)
 We investigate the thickness and temperature dependence of a series ofNi08Fe02/Ir02Mn08 bilayer samples with varying thickness ratio of theferromagnet/antiferromagnet (tFM/t<missing VAR>AFM) in order to explore the exchangecoupling strengths in tunneling anisotropic magnetoresistance (TAMR) devices.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

F
###Temperature and thickness dependence of tunneling anisotropic magnetoresistance in exchange-biased Py/IrMn/MgO/Ta stacks|H. Reichlova,V. Novak,Y. Kurosaki,M. Yamada,H. Yamamoto,A. Nishide,J. Hayakawa,H. Takahashi,M. Marysko,J. Wunderlich,X. Marti,T. Jungwirth###
(669259, 669259)
 We investigate the thickness and temperature dependence of a series ofNi08Fe02/Ir02Mn08 bilayer samples with varying thickness ratio of theferromagnet/antiferromagnet (tFM/t<missing VAR>AFM) in order to explore the exchangecoupling strengths in tunneling anisotropic magnetoresistance (TAMR) devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Temperature and thickness dependence of tunneling anisotropic magnetoresistance in exchange-biased Py/IrMn/MgO/Ta stacks|H. Reichlova,V. Novak,Y. Kurosaki,M. Yamada,H. Yamamoto,A. Nishide,J. Hayakawa,H. Takahashi,M. Marysko,J. Wunderlich,X. Marti,T. Jungwirth###
(669311, 669311)
Specific values of tFM/t<missing VAR>AFM<missing VAR> lead to four distinct scenarios with specificelectric responses to moderate magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Giant Magnetoresistance in Bilayer Graphene Nanoflakes|R. Farghadan,M. Farekiyan###
(669713, 669713)
 Coherent spin transport through bilayer graphene (BLG) nanoflakes sandwichedbetween two electrodes made of single-layer zigzag graphene nanoribbon wasinvestigated by means of Landauer-Buttiker formalism.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[174.0, 6, '%', 2]

B
###Giant Magnetoresistance in Bilayer Graphene Nanoflakes|R. Farghadan,M. Farekiyan###
(669776, 669776)
 Application of a magneticfield only on BLG structure as a channel produces a perfect spin polarizationin a large energy region.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 6, '%', 1]

B
###Giant Magnetoresistance in Bilayer Graphene Nanoflakes|R. Farghadan,M. Farekiyan###
(669841, 669841)
 Moreover, the conductance could be strongly modulatedby magnetization of the zigzag edge of AB-stacked BLG, and the junction,entirely made of carbon, produces a giant magnetoresistance (GMR) up to106%.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 6, '%', 0]

B
###Giant Magnetoresistance in Bilayer Graphene Nanoflakes|R. Farghadan,M. Farekiyan###
(669845, 669845)
 Moreover, the conductance could be strongly modulatedby magnetization of the zigzag edge of AB-stacked BLG, and the junction,entirely made of carbon, produces a giant magnetoresistance (GMR) up to106%.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 6, '%', 0]

B
###Giant Magnetoresistance in Bilayer Graphene Nanoflakes|R. Farghadan,M. Farekiyan###
(669914, 669914)
 Intestinally, GMR and spin polarization could be tuned by varying BLGwidth and length.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 6, '%', 1]

B
###Giant Magnetoresistance in Bilayer Graphene Nanoflakes|R. Farghadan,M. Farekiyan###
(669937, 669937)
 Generally, MR in a AB-stacked BLG strongly increases(decreases) with length (width).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 6, '%', 2]

B
###Giant Magnetoresistance in Bilayer Graphene Nanoflakes|R. Farghadan,M. Farekiyan###
(669941, 669941)
 Generally, MR in a AB-stacked BLG strongly increases(decreases) with length (width).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 6, '%', 2]

P
###Spin polarization ratios of resistivity and density of states estimated from anisotropic magnetoresistance ratio for nearly half-metallic ferromagnets|Satoshi Kokado,Yuya Sakuraba,Masakiyo Tsunoda###
(670038, 670038)
 We derive a simple relational expression between the spin polarization ratioof resistivity, Prho, and the anisotropic magnetoresistance ratio Deltarho/rho, and that between the spin polarization ratio of the density ofstates at the Fermi energy, Prm D<missing VAR>OS, and Delta rho/rho for nearlyhalf-metallic ferromagnets.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 0, 'to', 1]

P
###Spin polarization ratios of resistivity and density of states estimated from anisotropic magnetoresistance ratio for nearly half-metallic ferromagnets|Satoshi Kokado,Yuya Sakuraba,Masakiyo Tsunoda###
(670094, 670094)
 We derive a simple relational expression between the spin polarization ratioof resistivity, Prho, and the anisotropic magnetoresistance ratio Deltarho/rho, and that between the spin polarization ratio of the density ofstates at the Fermi energy, Prm D<missing VAR>OS, and Delta rho/rho for nearlyhalf-metallic ferromagnets.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 0, 'to', 1]

OS
###Spin polarization ratios of resistivity and density of states estimated from anisotropic magnetoresistance ratio for nearly half-metallic ferromagnets|Satoshi Kokado,Yuya Sakuraba,Masakiyo Tsunoda###
(670098, 670099)
 We derive a simple relational expression between the spin polarization ratioof resistivity, Prho, and the anisotropic magnetoresistance ratio Deltarho/rho, and that between the spin polarization ratio of the density ofstates at the Fermi energy, Prm D<missing VAR>OS, and Delta rho/rho for nearlyhalf-metallic ferromagnets.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 0, 'to', 1]

P
###Spin polarization ratios of resistivity and density of states estimated from anisotropic magnetoresistance ratio for nearly half-metallic ferromagnets|Satoshi Kokado,Yuya Sakuraba,Masakiyo Tsunoda###
(670128, 670128)
 We find that Prho and Prm D<missing VAR>OS increasewith increasing Delta rho/rho from 0 to a maximum value.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 0, 'to', 0]

P
###Spin polarization ratios of resistivity and density of states estimated from anisotropic magnetoresistance ratio for nearly half-metallic ferromagnets|Satoshi Kokado,Yuya Sakuraba,Masakiyo Tsunoda###
(670133, 670133)
 We find that Prho and Prm D<missing VAR>OS increasewith increasing Delta rho/rho from 0 to a maximum value.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 0, 'to', 0]

OS
###Spin polarization ratios of resistivity and density of states estimated from anisotropic magnetoresistance ratio for nearly half-metallic ferromagnets|Satoshi Kokado,Yuya Sakuraba,Masakiyo Tsunoda###
(670137, 670138)
 We find that Prho and Prm D<missing VAR>OS increasewith increasing Delta rho/rho from 0 to a maximum value.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 0, 'to', 0]

In
###Spin polarization ratios of resistivity and density of states estimated from anisotropic magnetoresistance ratio for nearly half-metallic ferromagnets|Satoshi Kokado,Yuya Sakuraba,Masakiyo Tsunoda###
(670163, 670163)
 In addition, weroughly estimate Prho and Prm D<missing VAR>OS for a Co2FeGa0.5Ge0.5Heusler alloy by substituting its experimentally observed Delta rho/rhointo the respective expressions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 0, 'to', 1]

P
###Spin polarization ratios of resistivity and density of states estimated from anisotropic magnetoresistance ratio for nearly half-metallic ferromagnets|Satoshi Kokado,Yuya Sakuraba,Masakiyo Tsunoda###
(670175, 670175)
 In addition, weroughly estimate Prho and Prm D<missing VAR>OS for a Co2FeGa0.5Ge0.5Heusler alloy by substituting its experimentally observed Delta rho/rhointo the respective expressions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 0, 'to', 1]

P
###Spin polarization ratios of resistivity and density of states estimated from anisotropic magnetoresistance ratio for nearly half-metallic ferromagnets|Satoshi Kokado,Yuya Sakuraba,Masakiyo Tsunoda###
(670180, 670180)
 In addition, weroughly estimate Prho and Prm D<missing VAR>OS for a Co2FeGa0.5Ge0.5Heusler alloy by substituting its experimentally observed Delta rho/rhointo the respective expressions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 0, 'to', 1]

OS
###Spin polarization ratios of resistivity and density of states estimated from anisotropic magnetoresistance ratio for nearly half-metallic ferromagnets|Satoshi Kokado,Yuya Sakuraba,Masakiyo Tsunoda###
(670184, 670185)
 In addition, weroughly estimate Prho and Prm D<missing VAR>OS for a Co2FeGa0.5Ge0.5Heusler alloy by substituting its experimentally observed Delta rho/rhointo the respective expressions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 0, 'to', 1]

Co2FeGa0.5Ge0.5
###Spin polarization ratios of resistivity and density of states estimated from anisotropic magnetoresistance ratio for nearly half-metallic ferromagnets|Satoshi Kokado,Yuya Sakuraba,Masakiyo Tsunoda###
(670191, 670197)
 In addition, weroughly estimate Prho and Prm D<missing VAR>OS for a Co2FeGa0.5Ge0.5Heusler alloy by substituting its experimentally observed Delta rho/rhointo the respective expressions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.5,0,0,0,0.125,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 0, 'to', 1]

ZrTe5
###Discovery of Log-Periodic Oscillations in Ultra-Quantum Topological Materials|Huichao Wang,Haiwen Liu,Yanan Li,Yongjie Liu,Junfeng Wang,Jun Liu,Jiyan Dai,Yong Wang,Liang Li,Jiaqiang Yan,David Mandrus,X. C. Xie,Jian Wang###
(670400, 670402)
Beyond the quantum limit (QL), the log-periodic oscillations involving up tofive oscillating cycles (5 peaks and 5 dips) are observed on themagnetoresistance (MR) of high quality single-crystal ZrTe5, virtually showingthe clearest feature of discrete scale invariance (D<missing VAR>SI).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 5, 'dips', 0]

I
###Discovery of Log-Periodic Oscillations in Ultra-Quantum Topological Materials|Huichao Wang,Haiwen Liu,Yanan Li,Yongjie Liu,Junfeng Wang,Jun Liu,Jiyan Dai,Yong Wang,Liang Li,Jiaqiang Yan,David Mandrus,X. C. Xie,Jian Wang###
(670427, 670427)
Beyond the quantum limit (QL), the log-periodic oscillations involving up tofive oscillating cycles (5 peaks and 5 dips) are observed on themagnetoresistance (MR) of high quality single-crystal ZrTe5, virtually showingthe clearest feature of discrete scale invariance (D<missing VAR>SI).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 5, 'dips', 0]

SI
###Discovery of Log-Periodic Oscillations in Ultra-Quantum Topological Materials|Huichao Wang,Haiwen Liu,Yanan Li,Yongjie Liu,Junfeng Wang,Jun Liu,Jiyan Dai,Yong Wang,Liang Li,Jiaqiang Yan,David Mandrus,X. C. Xie,Jian Wang###
(670466, 670467)
 Further theoreticalanalyses show that the two-body quasi-bound states can be responsible for theD<missing VAR>SI feature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 5, 'dips', 1]

FeSe
###Spin Fluctuation Induced Linear Magnetoresistance in Ultrathin Superconducting FeSe Films|Qingyan Wang,Wenhao Zhang,Weiwei Chen,Ying Xing,Yi Sun,Ziqiao Wang,Jia-Wei Mei,Zhengfei Wang,Lili Wang,Xu-Cun Ma,Feng Liu,Qi-Kun Xue,Jian Wang###
(670531, 670532)
Spin Fluctuation Induced Linear Magnetoresistance in Ultrathin Superconducting FeSe Films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeSe/S
###Spin Fluctuation Induced Linear Magnetoresistance in Ultrathin Superconducting FeSe Films|Qingyan Wang,Wenhao Zhang,Weiwei Chen,Ying Xing,Yi Sun,Ziqiao Wang,Jia-Wei Mei,Zhengfei Wang,Lili Wang,Xu-Cun Ma,Feng Liu,Qi-Kun Xue,Jian Wang###
(670551, 670554)
 The discovery of high-temperature superconductivity in FeSe/ST<missing VAR>O has triggedgreat research interest to reveal a range of exotic physical phenomena in thisnovel material.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

O
###Spin Fluctuation Induced Linear Magnetoresistance in Ultrathin Superconducting FeSe Films|Qingyan Wang,Wenhao Zhang,Weiwei Chen,Ying Xing,Yi Sun,Ziqiao Wang,Jia-Wei Mei,Zhengfei Wang,Lili Wang,Xu-Cun Ma,Feng Liu,Qi-Kun Xue,Jian Wang###
(670556, 670556)
 The discovery of high-temperature superconductivity in FeSe/ST<missing VAR>O has triggedgreat research interest to reveal a range of exotic physical phenomena in thisnovel material.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeSe/S
###Spin Fluctuation Induced Linear Magnetoresistance in Ultrathin Superconducting FeSe Films|Qingyan Wang,Wenhao Zhang,Weiwei Chen,Ying Xing,Yi Sun,Ziqiao Wang,Jia-Wei Mei,Zhengfei Wang,Lili Wang,Xu-Cun Ma,Feng Liu,Qi-Kun Xue,Jian Wang###
(670616, 670619)
 Here we present a temperature dependent magnetotransportmeasurement for ultrathin FeSe/ST<missing VAR>O films with different thickness andprotection layers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

O
###Spin Fluctuation Induced Linear Magnetoresistance in Ultrathin Superconducting FeSe Films|Qingyan Wang,Wenhao Zhang,Weiwei Chen,Ying Xing,Yi Sun,Ziqiao Wang,Jia-Wei Mei,Zhengfei Wang,Lili Wang,Xu-Cun Ma,Feng Liu,Qi-Kun Xue,Jian Wang###
(670621, 670621)
 Here we present a temperature dependent magnetotransportmeasurement for ultrathin FeSe/ST<missing VAR>O films with different thickness andprotection layers.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeSe/S
###Spin Fluctuation Induced Linear Magnetoresistance in Ultrathin Superconducting FeSe Films|Qingyan Wang,Wenhao Zhang,Weiwei Chen,Ying Xing,Yi Sun,Ziqiao Wang,Jia-Wei Mei,Zhengfei Wang,Lili Wang,Xu-Cun Ma,Feng Liu,Qi-Kun Xue,Jian Wang###
(670779, 670782)
 Thus, the observed LMR in coexistence with superconductivityprovides the first magnetotransport signature for spin fluctuation around thesuperconducting transition region in ultrathin FeSe/ST<missing VAR>O films.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

O
###Spin Fluctuation Induced Linear Magnetoresistance in Ultrathin Superconducting FeSe Films|Qingyan Wang,Wenhao Zhang,Weiwei Chen,Ying Xing,Yi Sun,Ziqiao Wang,Jia-Wei Mei,Zhengfei Wang,Lili Wang,Xu-Cun Ma,Feng Liu,Qi-Kun Xue,Jian Wang###
(670784, 670784)
 Thus, the observed LMR in coexistence with superconductivityprovides the first magnetotransport signature for spin fluctuation around thesuperconducting transition region in ultrathin FeSe/ST<missing VAR>O films.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Angle Dependent Interlayer Magnetoresistance (ILMR) in Multilayer Graphene Stacks|S. C. Bodepudi,Xiao Wang,Sandipan Pramanik###
(671062, 671062)
Angle Dependent Interlayer Magnetoresistance (ILMR) in Multilayer Graphene Stacks.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Angle Dependent Interlayer Magnetoresistance (ILMR) in Multilayer Graphene Stacks|S. C. Bodepudi,Xiao Wang,Sandipan Pramanik###
(671082, 671082)
 Interlayer magnetoresistance (ILMR) effect is explored in a vertical stack ofweakly coupled multilayer graphene as grown by chemical vapor deposition (CVD).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CV
###Angle Dependent Interlayer Magnetoresistance (ILMR) in Multilayer Graphene Stacks|S. C. Bodepudi,Xiao Wang,Sandipan Pramanik###
(671126, 671127)
 Interlayer magnetoresistance (ILMR) effect is explored in a vertical stack ofweakly coupled multilayer graphene as grown by chemical vapor deposition (CVD).
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Angle Dependent Interlayer Magnetoresistance (ILMR) in Multilayer Graphene Stacks|S. C. Bodepudi,Xiao Wang,Sandipan Pramanik###
(671207, 671207)
 To our knowledge,this is the first experimental report on angle dependent ILMR effect ingraphitic systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Angle Dependent Interlayer Magnetoresistance (ILMR) in Multilayer Graphene Stacks|S. C. Bodepudi,Xiao Wang,Sandipan Pramanik###
(671241, 671241)
 Our data agrees qualitatively with the existing theories ofILMR in multilayer massless Dirac Fermion systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Angle Dependent Interlayer Magnetoresistance (ILMR) in Multilayer Graphene Stacks|S. C. Bodepudi,Xiao Wang,Sandipan Pramanik###
(671271, 671271)
 However, a sharper change inILMR has been observed as the tilt angle of the magnetic field is varied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C1-xCo
###Comparative study on magnetoresistance of carbon-cobalt nanocomposite thin films grown by pulsed laser deposition|S. Sergeenkov,C. Cordova,L. Cichetto Jr,O. F. de Lima,E. Longo,F. M. Araujo-Moreira,C. Furtado###
(671409, 671413)
 We present a comparative study on the influence of applied magnetic field onthe resistance of C1-xCox<missing VAR> thin films (with x<missing VAR>0.1, 0.15 and 0.2)grown on Si substrate by pulsed laser deposition technique.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[11.0, 0.1, ',', 0]

Si
###Comparative study on magnetoresistance of carbon-cobalt nanocomposite thin films grown by pulsed laser deposition|S. Sergeenkov,C. Cordova,L. Cichetto Jr,O. F. de Lima,E. Longo,F. M. Araujo-Moreira,C. Furtado###
(671439, 671439)
 We present a comparative study on the influence of applied magnetic field onthe resistance of C1-xCox<missing VAR> thin films (with x<missing VAR>0.1, 0.15 and 0.2)grown on Si substrate by pulsed laser deposition technique.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 0.1, ',', 0]

In
###Skyrmions in magnetic tunnel junctions|Xueying Zhang,Wenlong Cai,Xichao Zhang,Zilu Wang,Zhi Li,Yu Zhang,Kaihua Cao,Na Lei,Wang Kang,Yue Zhang,Haiming Yu,Yan Zhou,Weisheng Zhao###
(671591, 671591)
 In this work, we demonstrate that skyrmions can be nucleated in the freelayer of a magnetic tunnel junction (MTJ) with Dzyaloshinskii-Moriyainteractions (DMI) by a spin-polarized current with the assistance of strayfields from the pinned layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Skyrmions in magnetic tunnel junctions|Xueying Zhang,Wenlong Cai,Xichao Zhang,Zilu Wang,Zhi Li,Yu Zhang,Kaihua Cao,Na Lei,Wang Kang,Yue Zhang,Haiming Yu,Yan Zhou,Weisheng Zhao###
(671649, 671649)
 In this work, we demonstrate that skyrmions can be nucleated in the freelayer of a magnetic tunnel junction (MTJ) with Dzyaloshinskii-Moriyainteractions (DMI) by a spin-polarized current with the assistance of strayfields from the pinned layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Skyrmions in magnetic tunnel junctions|Xueying Zhang,Wenlong Cai,Xichao Zhang,Zilu Wang,Zhi Li,Yu Zhang,Kaihua Cao,Na Lei,Wang Kang,Yue Zhang,Haiming Yu,Yan Zhou,Weisheng Zhao###
(671716, 671716)
 The size, stability and number of createdskyrmions can be tuned by either the DMI strength or the stray fielddistribution.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Skyrmions in magnetic tunnel junctions|Xueying Zhang,Wenlong Cai,Xichao Zhang,Zilu Wang,Zhi Li,Yu Zhang,Kaihua Cao,Na Lei,Wang Kang,Yue Zhang,Haiming Yu,Yan Zhou,Weisheng Zhao###
(671750, 671750)
 The interaction between the stray field and the DMI effectivefield is discussed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuCd2As2
###Coupling of magnetic order and charge transport in the candidate Dirac semimetal EuCd$_2$As$_2$|M. C. Rahn,J. -R. Soh,S. Francoual,L. S. I. Veiga,J. Strempfer,J. Mardegan,D. Y. Yan,Y. F. Guo,Y. G. Shi,A. T. Boothroyd###
(671878, 671882)
Coupling of magnetic order and charge transport in the candidate Dirac semimetal EuCd2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuCd2As2
###Coupling of magnetic order and charge transport in the candidate Dirac semimetal EuCd$_2$As$_2$|M. C. Rahn,J. -R. Soh,S. Francoual,L. S. I. Veiga,J. Strempfer,J. Mardegan,D. Y. Yan,Y. F. Guo,Y. G. Shi,A. T. Boothroyd###
(671916, 671920)
 We use resonant elastic x<missing VAR>-ray scattering to determine the evolution ofmagnetic order in EuCd2As2 below T<missing VAR>textrmN9.5,K, as a function oftemperature and applied magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N9.5
###Coupling of magnetic order and charge transport in the candidate Dirac semimetal EuCd$_2$As$_2$|M. C. Rahn,J. -R. Soh,S. Francoual,L. S. I. Veiga,J. Strempfer,J. Mardegan,D. Y. Yan,Y. F. Guo,Y. G. Shi,A. T. Boothroyd###
(671926, 671927)
 We use resonant elastic x<missing VAR>-ray scattering to determine the evolution ofmagnetic order in EuCd2As2 below T<missing VAR>textrmN9.5,K, as a function oftemperature and applied magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Coupling of magnetic order and charge transport in the candidate Dirac semimetal EuCd$_2$As$_2$|M. C. Rahn,J. -R. Soh,S. Francoual,L. S. I. Veiga,J. Strempfer,J. Mardegan,D. Y. Yan,Y. F. Guo,Y. G. Shi,A. T. Boothroyd###
(671929, 671929)
 We use resonant elastic x<missing VAR>-ray scattering to determine the evolution ofmagnetic order in EuCd2As2 below T<missing VAR>textrmN9.5,K, as a function oftemperature and applied magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cd3As2
###Coupling of magnetic order and charge transport in the candidate Dirac semimetal EuCd$_2$As$_2$|M. C. Rahn,J. -R. Soh,S. Francoual,L. S. I. Veiga,J. Strempfer,J. Mardegan,D. Y. Yan,Y. F. Guo,Y. G. Shi,A. T. Boothroyd###
(672050, 672053)
 Our textitab initio electronic structurecalculations indicate that the Dirac dispersion found in the nonmagnetic Diracsemimetal Cd3As2 is also present in EuCd2As2, but is gapped for T<missing VAR>< T<missing VAR>textrmN due to the breaking of C3 symmetry by the magneticstructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuCd2As2
###Coupling of magnetic order and charge transport in the candidate Dirac semimetal EuCd$_2$As$_2$|M. C. Rahn,J. -R. Soh,S. Francoual,L. S. I. Veiga,J. Strempfer,J. Mardegan,D. Y. Yan,Y. F. Guo,Y. G. Shi,A. T. Boothroyd###
(672063, 672067)
 Our textitab initio electronic structurecalculations indicate that the Dirac dispersion found in the nonmagnetic Diracsemimetal Cd3As2 is also present in EuCd2As2, but is gapped for T<missing VAR>< T<missing VAR>textrmN due to the breaking of C3 symmetry by the magneticstructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Coupling of magnetic order and charge transport in the candidate Dirac semimetal EuCd$_2$As$_2$|M. C. Rahn,J. -R. Soh,S. Francoual,L. S. I. Veiga,J. Strempfer,J. Mardegan,D. Y. Yan,Y. F. Guo,Y. G. Shi,A. T. Boothroyd###
(672085, 672085)
 Our textitab initio electronic structurecalculations indicate that the Dirac dispersion found in the nonmagnetic Diracsemimetal Cd3As2 is also present in EuCd2As2, but is gapped for T<missing VAR>< T<missing VAR>textrmN due to the breaking of C3 symmetry by the magneticstructure.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C3
###Coupling of magnetic order and charge transport in the candidate Dirac semimetal EuCd$_2$As$_2$|M. C. Rahn,J. -R. Soh,S. Francoual,L. S. I. Veiga,J. Strempfer,J. Mardegan,D. Y. Yan,Y. F. Guo,Y. G. Shi,A. T. Boothroyd###
(672097, 672098)
 Our textitab initio electronic structurecalculations indicate that the Dirac dispersion found in the nonmagnetic Diracsemimetal Cd3As2 is also present in EuCd2As2, but is gapped for T<missing VAR>< T<missing VAR>textrmN due to the breaking of C3 symmetry by the magneticstructure.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

U
###Origins of the unidirectional spin Hall magnetoresistance in metallic bilayers|Can Onur Avci,Johannes Mendil,Geoffrey S. D. Beach,Pietro Gambardella###
(672434, 672434)
 Here, weinvestigate the unidirectional magnetoresistance (UMR) caused by thecurrent-induced spin accumulation in Co/Pt and CoCr/Pt bilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co/Pt
###Origins of the unidirectional spin Hall magnetoresistance in metallic bilayers|Can Onur Avci,Johannes Mendil,Geoffrey S. D. Beach,Pietro Gambardella###
(672456, 672458)
 Here, weinvestigate the unidirectional magnetoresistance (UMR) caused by thecurrent-induced spin accumulation in Co/Pt and CoCr/Pt bilayers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

CoCr/Pt
###Origins of the unidirectional spin Hall magnetoresistance in metallic bilayers|Can Onur Avci,Johannes Mendil,Geoffrey S. D. Beach,Pietro Gambardella###
(672462, 672465)
 Here, weinvestigate the unidirectional magnetoresistance (UMR) caused by thecurrent-induced spin accumulation in Co/Pt and CoCr/Pt bilayers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

U
###Origins of the unidirectional spin Hall magnetoresistance in metallic bilayers|Can Onur Avci,Johannes Mendil,Geoffrey S. D. Beach,Pietro Gambardella###
(672552, 672552)
 Our measurements provide a consistent description of the current,magnetic field, and temperature dependence of the UMR and show that bothpositive and negative UMR can be obtained by tuning the interface and bulkspin-dependent scattering terms relative to the magnon population.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

U
###Origins of the unidirectional spin Hall magnetoresistance in metallic bilayers|Can Onur Avci,Johannes Mendil,Geoffrey S. D. Beach,Pietro Gambardella###
(672571, 672571)
 Our measurements provide a consistent description of the current,magnetic field, and temperature dependence of the UMR and show that bothpositive and negative UMR can be obtained by tuning the interface and bulkspin-dependent scattering terms relative to the magnon population.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

US
###Relation between unidirectional spin Hall magnetoresistance and spin current-driven magnon generation|I. V. Borisenko,V. E. Demidov,S. Urazhdin,A. B. Rinkevich,S. O. Demokritov###
(672666, 672667)
 We perform electronic measurements of unidirectional spin Hallmagnetoresistance (USMR) in a Permalloy/Pt bilayer, in conjunction withmagneto-optical Brillouin light spectroscopy of spin current-driven magnonpopulation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Relation between unidirectional spin Hall magnetoresistance and spin current-driven magnon generation|I. V. Borisenko,V. E. Demidov,S. Urazhdin,A. B. Rinkevich,S. O. Demokritov###
(672678, 672678)
 We perform electronic measurements of unidirectional spin Hallmagnetoresistance (USMR) in a Permalloy/Pt bilayer, in conjunction withmagneto-optical Brillouin light spectroscopy of spin current-driven magnonpopulation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

US
###Relation between unidirectional spin Hall magnetoresistance and spin current-driven magnon generation|I. V. Borisenko,V. E. Demidov,S. Urazhdin,A. B. Rinkevich,S. O. Demokritov###
(672728, 672729)
 We show that the current dependence of USMR closely follows thedipolar magnon density, and that both dependencies exhibit the same scalingover a large temperature range of 80-400 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Relation between unidirectional spin Hall magnetoresistance and spin current-driven magnon generation|I. V. Borisenko,V. E. Demidov,S. Urazhdin,A. B. Rinkevich,S. O. Demokritov###
(672780, 672780)
 We show that the current dependence of USMR closely follows thedipolar magnon density, and that both dependencies exhibit the same scalingover a large temperature range of 80-400 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

US
###Relation between unidirectional spin Hall magnetoresistance and spin current-driven magnon generation|I. V. Borisenko,V. E. Demidov,S. Urazhdin,A. B. Rinkevich,S. O. Demokritov###
(672810, 672811)
 These findings demonstrate a closerelationship between spin current-driven magnon generation and USMR, andindicate that the latter is likely dominated by the dipolar magnons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sn
###Growth and Magnetotransport in Thin Film α-Sn on CdTe|Owen Vail,Patrick Taylor,Patrick Folkes,Barbara Nichols,George de Coster###
(673127, 673127)
Growth and Magnetotransport in Thin Film -Sn on CdTe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CdTe
###Growth and Magnetotransport in Thin Film α-Sn on CdTe|Owen Vail,Patrick Taylor,Patrick Folkes,Barbara Nichols,George de Coster###
(673131, 673132)
Growth and Magnetotransport in Thin Film -Sn on CdTe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sn
###Growth and Magnetotransport in Thin Film α-Sn on CdTe|Owen Vail,Patrick Taylor,Patrick Folkes,Barbara Nichols,George de Coster###
(673151, 673151)
 We report growth and characterization of epitaxial alpha-Sn thin filmsgrown on CdTe(111)B.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Growth and Magnetotransport in Thin Film α-Sn on CdTe|Owen Vail,Patrick Taylor,Patrick Folkes,Barbara Nichols,George de Coster###
(673167, 673167)
 We report growth and characterization of epitaxial alpha-Sn thin filmsgrown on CdTe(111)B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CdTe
###Growth and Magnetotransport in Thin Film α-Sn on CdTe|Owen Vail,Patrick Taylor,Patrick Folkes,Barbara Nichols,George de Coster###
(673332, 673333)
 Careful preparation of the CdTe surface before growth isconsidered crucial to attain a low dopant density and accessible topologicalstates on an insulating substrate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZrTe5
###Anisotropic Landau level splitting and Lifshitz transition induced magnetoresistance enhancement in ZrTe5 crystals|L. Zhou,A. Ramiere,P. B. Chen,J. Y. Tang,Y. H. Wu,X. Lei,G. P. Guo,J. Q. He,H. T. He###
(673408, 673410)
Anisotropic Landau level splitting and Lifshitz transition induced magnetoresistance enhancement in ZrTe5 crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 3, 'D', 3],[125.0, 2, 'D', 3]

ZrTe5
###Anisotropic Landau level splitting and Lifshitz transition induced magnetoresistance enhancement in ZrTe5 crystals|L. Zhou,A. Ramiere,P. B. Chen,J. Y. Tang,Y. H. Wu,X. Lei,G. P. Guo,J. Q. He,H. T. He###
(673429, 673431)
 Magneto-transport study has been performed in ZrTe5 single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 3, 'D', 2],[104.0, 2, 'D', 2]

ZrTe5
###Anisotropic Landau level splitting and Lifshitz transition induced magnetoresistance enhancement in ZrTe5 crystals|L. Zhou,A. Ramiere,P. B. Chen,J. Y. Tang,Y. H. Wu,X. Lei,G. P. Guo,J. Q. He,H. T. He###
(673487, 673489)
 Theobserved Shubnikov-de Hass quantum oscillation at low temperature clearlydemonstrates the existence of a nontrivial band with small effective mass inZrTe5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 3, 'D', 1],[46.0, 2, 'D', 1]

ZrTe5
###Anisotropic Landau level splitting and Lifshitz transition induced magnetoresistance enhancement in ZrTe5 crystals|L. Zhou,A. Ramiere,P. B. Chen,J. Y. Tang,Y. H. Wu,X. Lei,G. P. Guo,J. Q. He,H. T. He###
(673523, 673525)
 Furthermore, we also revealed the 3D anisotropic nature of high-fieldLandau level splitting in ZrTe5, very different from the 2D behavior measuredin previous transport studies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 3, 'D', 0],[10.0, 2, 'D', 0]

ZrTe5
###Anisotropic Landau level splitting and Lifshitz transition induced magnetoresistance enhancement in ZrTe5 crystals|L. Zhou,A. Ramiere,P. B. Chen,J. Y. Tang,Y. H. Wu,X. Lei,G. P. Guo,J. Q. He,H. T. He###
(673607, 673609)
 Besides these, an abnormal large enhancement ofmagnetoresistance appears at high temperatures, which is believed to arise fromthe Lifshitz transition induced two-carrier transport in ZrTe5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 3, 'D', 1],[72.0, 2, 'D', 1]

ZrTe5
###Anisotropic Landau level splitting and Lifshitz transition induced magnetoresistance enhancement in ZrTe5 crystals|L. Zhou,A. Ramiere,P. B. Chen,J. Y. Tang,Y. H. Wu,X. Lei,G. P. Guo,J. Q. He,H. T. He###
(673633, 673635)
 Our studyprovides more understanding of the physical properties of ZrTe5 and sheds lighton potential application of ZrTe5 in spintronics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 3, 'D', 2],[98.0, 2, 'D', 2]

ZrTe5
###Anisotropic Landau level splitting and Lifshitz transition induced magnetoresistance enhancement in ZrTe5 crystals|L. Zhou,A. Ramiere,P. B. Chen,J. Y. Tang,Y. H. Wu,X. Lei,G. P. Guo,J. Q. He,H. T. He###
(673652, 673654)
 Our studyprovides more understanding of the physical properties of ZrTe5 and sheds lighton potential application of ZrTe5 in spintronics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 3, 'D', 2],[117.0, 2, 'D', 2]

(ISPI)
###Iterative path-integral summations for the tunneling magnetoresistance in interacting quantum-dot spin valves|S. Mundinar,P. Stegmann,J. König,S. Weiss###
(673801, 673806)
 To include Coulombinteraction in the calculation of the tunneling magnetoresistance (TMR), wereformulate and generalize the recently-developed, numerically-exact method ofiterative summation of path integrals (ISPI) to account for spin-dependenttunneling.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ISPI
###Iterative path-integral summations for the tunneling magnetoresistance in interacting quantum-dot spin valves|S. Mundinar,P. Stegmann,J. König,S. Weiss###
(673824, 673827)
 The ISPI scheme allows us to investigate weak to intermediateCoulomb interaction in a wide range of gate and bias voltage and down totemperatures at which a perturbative treatment of tunneling severely fails.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn5Si3
###Magnetic phase diagram, magnetotransport and inverse magnetocaloric effect in the noncollinear antiferromagnet Mn$_5$Si$_3$|Roberto F. Luccas,Gabriel Sánchez-Santolino,Alex Correa-Orellana,Federico J. Mompean,Mar García-Hernández,Hermann Suderow###
(673929, 673932)
Magnetic phase diagram, magnetotransport and inverse magnetocaloric effect in the noncollinear antiferromagnet Mn5Si3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.375,0,0,0,0,0,0,0,0,0,0,0.625,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn5Si3
###Magnetic phase diagram, magnetotransport and inverse magnetocaloric effect in the noncollinear antiferromagnet Mn$_5$Si$_3$|Roberto F. Luccas,Gabriel Sánchez-Santolino,Alex Correa-Orellana,Federico J. Mompean,Mar García-Hernández,Hermann Suderow###
(673939, 673942)
 The antiferromagnet Mn5Si3 has recently attracted attention because anoncollinear spin arrangement has been shown to produce a topological anomalousHall effect and an inverse magnetocaloric effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.375,0,0,0,0,0,0,0,0,0,0,0.625,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn5Si3
###Magnetic phase diagram, magnetotransport and inverse magnetocaloric effect in the noncollinear antiferromagnet Mn$_5$Si$_3$|Roberto F. Luccas,Gabriel Sánchez-Santolino,Alex Correa-Orellana,Federico J. Mompean,Mar García-Hernández,Hermann Suderow###
(674008, 674011)
 Here we synthesize singlecrystals of Mn5Si3 using flux growth.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.375,0,0,0,0,0,0,0,0,0,0,0.625,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Magnetic phase diagram, magnetotransport and inverse magnetocaloric effect in the noncollinear antiferromagnet Mn$_5$Si$_3$|Roberto F. Luccas,Gabriel Sánchez-Santolino,Alex Correa-Orellana,Federico J. Mompean,Mar García-Hernández,Hermann Suderow###
(674138, 674138)
 The latter magneticphase might be caused by strain produced by Cu inclusions that lead to quenchedfluctuations of the mixed character magnetic ordering in this compound.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Impact of spin transfer torque on the write error rate of a voltage-torque-based magnetoresistive random access memory|Hiroshi Imamura,Rie Matsumoto###
(674230, 674230)
 Impact of spin transfer torque (STT) on the write error rate of avoltage-torque-based magnetoresistive random access memory is theoreticallyanalyzed by using the macrospin model.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Impact of spin transfer torque on the write error rate of a voltage-torque-based magnetoresistive random access memory|Hiroshi Imamura,Rie Matsumoto###
(674292, 674292)
 During the voltage pulse the STT assistsor suppresses the precessional motion of the magnetization depending on theinitial magnetization direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Impact of spin transfer torque on the write error rate of a voltage-torque-based magnetoresistive random access memory|Hiroshi Imamura,Rie Matsumoto###
(674354, 674354)
 The characteristic value of the currentdensity is derived by balancing the STT and the external-field torque, which isabout 5times 1011 A/m<missing VAR>2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Impact of spin transfer torque on the write error rate of a voltage-torque-based magnetoresistive random access memory|Hiroshi Imamura,Rie Matsumoto###
(674413, 674413)
 The results show that the write error rateis insensitive to the STT below the current density of 1010 A/m<missing VAR>2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Lattice study of electromagnetic conductivity of quark-gluon plasma in external magnetic field|Nikita Yu. Astrakhantsev,Victor V. Braguta,Massimo D'Elia,Andrey Yu. Kotov,Aleksandr A. Nikolaev,Francesco Sanfilippo###
(674492, 674492)
 conductivity of QGP in a magneticbackground by lattice simulations with Nf<missing VAR>  21 dynamical rooted staggeredfermions at the physical point.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 200, ',', 2],[71.0, 250, ',', 2]

N
###Lattice study of electromagnetic conductivity of quark-gluon plasma in external magnetic field|Nikita Yu. Astrakhantsev,Victor V. Braguta,Massimo D'Elia,Andrey Yu. Kotov,Aleksandr A. Nikolaev,Francesco Sanfilippo###
(674511, 674511)
 conductivity of QGP in a magneticbackground by lattice simulations with Nf<missing VAR>  21 dynamical rooted staggeredfermions at the physical point.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 200, ',', 2],[52.0, 250, ',', 2]

V
###Lattice study of electromagnetic conductivity of quark-gluon plasma in external magnetic field|Nikita Yu. Astrakhantsev,Victor V. Braguta,Massimo D'Elia,Andrey Yu. Kotov,Aleksandr A. Nikolaev,Francesco Sanfilippo###
(674566, 674566)
currents at T<missing VAR>200,,250,MeV and use the Tikhonov approach to extractthe conductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 200, ',', 0],[3.0, 250, ',', 0]

P
###Lattice study of electromagnetic conductivity of quark-gluon plasma in external magnetic field|Nikita Yu. Astrakhantsev,Victor V. Braguta,Massimo D'Elia,Andrey Yu. Kotov,Aleksandr A. Nikolaev,Francesco Sanfilippo###
(674664, 674664)
 This is found to rise with the magnetic field in thedirection parallel to it and to decrease in the transverse direction, givingevidence for both the Chiral Magnetic Effect and the magnetoresistancephenomenon in QGP.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 200, ',', 1],[101.0, 250, ',', 1]

P
###Lattice study of electromagnetic conductivity of quark-gluon plasma in external magnetic field|Nikita Yu. Astrakhantsev,Victor V. Braguta,Massimo D'Elia,Andrey Yu. Kotov,Aleksandr A. Nikolaev,Francesco Sanfilippo###
(674687, 674687)
 We also estimate the chiral charge relaxation time in QGP.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 200, ',', 2],[124.0, 250, ',', 2]

Cr2O3
###Disclosing antiferromagnetism in tetragonal Cr2O3 by electrical measurements|M. Asa,C. Autieri,C. Barone,C. Mauro,S. Picozzi,S. Pagano,M. Cantoni###
(674706, 674709)
Disclosing antiferromagnetism in tetragonal Cr2O3 by electrical measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 40, 'K', 3]

(III)
###Disclosing antiferromagnetism in tetragonal Cr2O3 by electrical measurements|M. Asa,C. Autieri,C. Barone,C. Mauro,S. Picozzi,S. Pagano,M. Cantoni###
(674728, 674732)
 The tetragonal phase of chromium (III) oxide, although unstable in the bulk,can be synthesized in epitaxial heterostructures.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 40, 'K', 2]

Cr2O3
###Disclosing antiferromagnetism in tetragonal Cr2O3 by electrical measurements|M. Asa,C. Autieri,C. Barone,C. Mauro,S. Picozzi,S. Pagano,M. Cantoni###
(674819, 674822)
 We demonstrate experimentally antiferromagnetism up to 40 K inultrathin films of t<missing VAR>-Cr2O3 by electrical measurements exploiting interfaceeffect within a neighboring ultrathin Pt layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 40, 'K', 0]

Pt
###Disclosing antiferromagnetism in tetragonal Cr2O3 by electrical measurements|M. Asa,C. Autieri,C. Barone,C. Mauro,S. Picozzi,S. Pagano,M. Cantoni###
(674845, 674845)
 We demonstrate experimentally antiferromagnetism up to 40 K inultrathin films of t<missing VAR>-Cr2O3 by electrical measurements exploiting interfaceeffect within a neighboring ultrathin Pt layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 40, 'K', 0]

Pt
###Disclosing antiferromagnetism in tetragonal Cr2O3 by electrical measurements|M. Asa,C. Autieri,C. Barone,C. Mauro,S. Picozzi,S. Pagano,M. Cantoni###
(674861, 674861)
 We show that magnetotransportin Pt is affected by both spin-Hall magnetoresistance and magnetic proximityeffect while we exclude any role of magnetism for the low-temperatureresistance anomaly observed in Pt.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 40, 'K', 1]

Pt
###Disclosing antiferromagnetism in tetragonal Cr2O3 by electrical measurements|M. Asa,C. Autieri,C. Barone,C. Mauro,S. Picozzi,S. Pagano,M. Cantoni###
(674917, 674917)
 We show that magnetotransportin Pt is affected by both spin-Hall magnetoresistance and magnetic proximityeffect while we exclude any role of magnetism for the low-temperatureresistance anomaly observed in Pt.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 40, 'K', 1]

At
###Record-Breaking Magnetoresistance at the Edge of a Microflake of Natural Graphite|Christian E. Precker,Jose Barzola-Quiquia,Pablo D. Esquinazi,Markus Stiller,Mun K. Chan,Marcelo Jaime,Zhipeng Zhang,Marius Grundmann###
(675036, 675036)
 At low temperatures and at B sim 21T<missing VAR> themagnetoresistance (MR) reaches sim 107%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 7, '%', 0],[136.0, 2, 'D', 2]

B
###Record-Breaking Magnetoresistance at the Edge of a Microflake of Natural Graphite|Christian E. Precker,Jose Barzola-Quiquia,Pablo D. Esquinazi,Markus Stiller,Mun K. Chan,Marcelo Jaime,Zhipeng Zhang,Marius Grundmann###
(675046, 675046)
 At low temperatures and at B sim 21T<missing VAR> themagnetoresistance (MR) reaches sim 107%.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 7, '%', 0],[126.0, 2, 'D', 2]

K
###Record-Breaking Magnetoresistance at the Edge of a Microflake of Natural Graphite|Christian E. Precker,Jose Barzola-Quiquia,Pablo D. Esquinazi,Markus Stiller,Mun K. Chan,Marcelo Jaime,Zhipeng Zhang,Marius Grundmann###
(675121, 675121)
 The MR values exceed by far allearlier reported ones for graphite and they are comparable or even larger (atT<missing VAR> > 50K) than the largest reported in solids including the Weyl semimetals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 7, '%', 1],[51.0, 2, 'D', 1]

MnGa/GaAs/MnGa
###Large magnetoresistance and spin-dependent output voltage in a lateral MnGa/GaAs/MnGa spin-valve device|Koki Chonan,Nguyen Huynh Duy Khang,Masaaki Tanaka,Pham Nam Hai###
(675218, 675225)
Large magnetoresistance and spin-dependent output voltage in a lateral MnGa/GaAs/MnGa spin-valve device.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[39.0, 600, 'nm', 1],[81.0, 50, 'K', 2],[138.0, 12, '%', 3],[142.0, 4, 'K', 3],[183.0, 33, 'mV', 4]

GaAs
###Large magnetoresistance and spin-dependent output voltage in a lateral MnGa/GaAs/MnGa spin-valve device|Koki Chonan,Nguyen Huynh Duy Khang,Masaaki Tanaka,Pham Nam Hai###
(675268, 675269)
 We investigated the spin-dependent transport properties of a lateralspin-valve device with a 600 nm-long GaAs channel and ferromagnetic MnGaelectrodes with perpendicular magnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 600, 'nm', 0],[37.0, 50, 'K', 1],[94.0, 12, '%', 2],[98.0, 4, 'K', 2],[139.0, 33, 'mV', 3]

MnGa
###Large magnetoresistance and spin-dependent output voltage in a lateral MnGa/GaAs/MnGa spin-valve device|Koki Chonan,Nguyen Huynh Duy Khang,Masaaki Tanaka,Pham Nam Hai###
(675277, 675278)
 We investigated the spin-dependent transport properties of a lateralspin-valve device with a 600 nm-long GaAs channel and ferromagnetic MnGaelectrodes with perpendicular magnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 600, 'nm', 0],[28.0, 50, 'K', 1],[85.0, 12, '%', 2],[89.0, 4, 'K', 2],[130.0, 33, 'mV', 3]

MnGa/GaAs
###Large magnetoresistance and spin-dependent output voltage in a lateral MnGa/GaAs/MnGa spin-valve device|Koki Chonan,Nguyen Huynh Duy Khang,Masaaki Tanaka,Pham Nam Hai###
(675322, 675326)
 Its current-voltagecharacteristics show nonlinear behavior below 50 K, indicating that tunneltransport through the MnGa/GaAs Schottky barrier is dominant at lowtemperatures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[58.0, 600, 'nm', 1],[16.0, 50, 'K', 0],[37.0, 12, '%', 1],[41.0, 4, 'K', 1],[82.0, 33, 'mV', 2]

II
###Transport characteristics of type II Weyl semimetal MoTe2 thin films grown by chemical vapor deposition|Niraj Bhattarai,Andrew W. Forbes,Rajendra P. Dulal,Ian L. Pegg,John Philip###
(675474, 675475)
Transport characteristics of type II Weyl semimetal MoTe2 thin films grown by chemical vapor deposition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[227.0, 10, 'K', 5],[230.0, 200, 'K', 5]

MoTe2
###Transport characteristics of type II Weyl semimetal MoTe2 thin films grown by chemical vapor deposition|Niraj Bhattarai,Andrew W. Forbes,Rajendra P. Dulal,Ian L. Pegg,John Philip###
(675481, 675483)
Transport characteristics of type II Weyl semimetal MoTe2 thin films grown by chemical vapor deposition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[219.0, 10, 'K', 5],[222.0, 200, 'K', 5]

MoTe2
###Transport characteristics of type II Weyl semimetal MoTe2 thin films grown by chemical vapor deposition|Niraj Bhattarai,Andrew W. Forbes,Rajendra P. Dulal,Ian L. Pegg,John Philip###
(675512, 675514)
 Theoretical calculations and experimental observations show MoTe2 is a typeII Weyl semimetal, along with many members of transition metal dichalcogenidesfamily.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 10, 'K', 4],[191.0, 200, 'K', 4]

II
###Transport characteristics of type II Weyl semimetal MoTe2 thin films grown by chemical vapor deposition|Niraj Bhattarai,Andrew W. Forbes,Rajendra P. Dulal,Ian L. Pegg,John Philip###
(675523, 675524)
 Theoretical calculations and experimental observations show MoTe2 is a typeII Weyl semimetal, along with many members of transition metal dichalcogenidesfamily.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 10, 'K', 4],[181.0, 200, 'K', 4]

MoTe2
###Transport characteristics of type II Weyl semimetal MoTe2 thin films grown by chemical vapor deposition|Niraj Bhattarai,Andrew W. Forbes,Rajendra P. Dulal,Ian L. Pegg,John Philip###
(675565, 675567)
 We have grown highly crystalline large-area MoTe2 thin films on Si/SiO2substrates by chemical vapor deposition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 10, 'K', 3],[138.0, 200, 'K', 3]

Si/SiO2
###Transport characteristics of type II Weyl semimetal MoTe2 thin films grown by chemical vapor deposition|Niraj Bhattarai,Andrew W. Forbes,Rajendra P. Dulal,Ian L. Pegg,John Philip###
(675575, 675579)
 We have grown highly crystalline large-area MoTe2 thin films on Si/SiO2substrates by chemical vapor deposition.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[123.0, 10, 'K', 3],[126.0, 200, 'K', 3]

F
###Structural sensitivity of the spin Hall magnetoresistance in antiferromagnetic thin films|Andrew Ross,Romain Lebrun,Camilo Ulloa,Daniel A. Grave,Asaf Kay,Lorenzo Baldrati,Florian Kronast,Sergio Valencia,Avner Rothschild,Mathias Kläui###
(675775, 675775)
 Reading the magnetic state of antiferromagnetic (AFM) thin films is key forAFM<missing VAR> spintronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 0.1, '%', 1]

F
###Structural sensitivity of the spin Hall magnetoresistance in antiferromagnetic thin films|Andrew Ross,Romain Lebrun,Camilo Ulloa,Daniel A. Grave,Asaf Kay,Lorenzo Baldrati,Florian Kronast,Sergio Valencia,Avner Rothschild,Mathias Kläui###
(675791, 675791)
 Reading the magnetic state of antiferromagnetic (AFM) thin films is key forAFM<missing VAR> spintronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 0.1, '%', 1]

S
###Structural sensitivity of the spin Hall magnetoresistance in antiferromagnetic thin films|Andrew Ross,Romain Lebrun,Camilo Ulloa,Daniel A. Grave,Asaf Kay,Lorenzo Baldrati,Florian Kronast,Sergio Valencia,Avner Rothschild,Mathias Kläui###
(675821, 675821)
 We investigate the underlying physics behind the spinHall magnetoresistance (SMR) of bilayers of platinum and insulating AFM<missing VAR>hematite (alpha-Fe2O3) and find an SMR efficiency of up to 0.1%, comparableto ferromagnetic based structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 0.1, '%', 0]

F
###Structural sensitivity of the spin Hall magnetoresistance in antiferromagnetic thin films|Andrew Ross,Romain Lebrun,Camilo Ulloa,Daniel A. Grave,Asaf Kay,Lorenzo Baldrati,Florian Kronast,Sergio Valencia,Avner Rothschild,Mathias Kläui###
(675839, 675839)
 We investigate the underlying physics behind the spinHall magnetoresistance (SMR) of bilayers of platinum and insulating AFM<missing VAR>hematite (alpha-Fe2O3) and find an SMR efficiency of up to 0.1%, comparableto ferromagnetic based structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 0.1, '%', 0]

O3
###Structural sensitivity of the spin Hall magnetoresistance in antiferromagnetic thin films|Andrew Ross,Romain Lebrun,Camilo Ulloa,Daniel A. Grave,Asaf Kay,Lorenzo Baldrati,Florian Kronast,Sergio Valencia,Avner Rothschild,Mathias Kläui###
(675850, 675851)
 We investigate the underlying physics behind the spinHall magnetoresistance (SMR) of bilayers of platinum and insulating AFM<missing VAR>hematite (alpha-Fe2O3) and find an SMR efficiency of up to 0.1%, comparableto ferromagnetic based structures.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 0.1, '%', 0]

S
###Structural sensitivity of the spin Hall magnetoresistance in antiferromagnetic thin films|Andrew Ross,Romain Lebrun,Camilo Ulloa,Daniel A. Grave,Asaf Kay,Lorenzo Baldrati,Florian Kronast,Sergio Valencia,Avner Rothschild,Mathias Kläui###
(675860, 675860)
 We investigate the underlying physics behind the spinHall magnetoresistance (SMR) of bilayers of platinum and insulating AFM<missing VAR>hematite (alpha-Fe2O3) and find an SMR efficiency of up to 0.1%, comparableto ferromagnetic based structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 0.1, '%', 0]

S
###Structural sensitivity of the spin Hall magnetoresistance in antiferromagnetic thin films|Andrew Ross,Romain Lebrun,Camilo Ulloa,Daniel A. Grave,Asaf Kay,Lorenzo Baldrati,Florian Kronast,Sergio Valencia,Avner Rothschild,Mathias Kläui###
(675898, 675898)
 To understand the observed complex SMR fielddependence, we analyse the effect of misalignments of the magnetic axis thatarise during growth of thin films, by electrical measurements and directmagnetic imaging, and find that a small deviation can result in significantsignatures in the SMR response.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 0.1, '%', 1]

S
###Structural sensitivity of the spin Hall magnetoresistance in antiferromagnetic thin films|Andrew Ross,Romain Lebrun,Camilo Ulloa,Daniel A. Grave,Asaf Kay,Lorenzo Baldrati,Florian Kronast,Sergio Valencia,Avner Rothschild,Mathias Kläui###
(675987, 675987)
 To understand the observed complex SMR fielddependence, we analyse the effect of misalignments of the magnetic axis thatarise during growth of thin films, by electrical measurements and directmagnetic imaging, and find that a small deviation can result in significantsignatures in the SMR response.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 0.1, '%', 1]

S
###Structural sensitivity of the spin Hall magnetoresistance in antiferromagnetic thin films|Andrew Ross,Romain Lebrun,Camilo Ulloa,Daniel A. Grave,Asaf Kay,Lorenzo Baldrati,Florian Kronast,Sergio Valencia,Avner Rothschild,Mathias Kläui###
(676015, 676015)
 This highlights the care that must be takenwhen interpreting SMR measurements on AFM<missing VAR> spin textures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 0.1, '%', 2]

F
###Structural sensitivity of the spin Hall magnetoresistance in antiferromagnetic thin films|Andrew Ross,Romain Lebrun,Camilo Ulloa,Daniel A. Grave,Asaf Kay,Lorenzo Baldrati,Florian Kronast,Sergio Valencia,Avner Rothschild,Mathias Kläui###
(676024, 676024)
 This highlights the care that must be takenwhen interpreting SMR measurements on AFM<missing VAR> spin textures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 0.1, '%', 2]

Co/MgO
###Interface-driven giant tunnel magnetoresistance in (111)-oriented junctions|Keisuke Masuda,Hiroyoshi Itoh,Yoshio Miura###
(676092, 676095)
 We theoretically study the tunnel magnetoresistance (TMR) effect in(111)-oriented junctions Co/MgO/Co(111) and Ni/MgO/Ni(111).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[47.0, 2000, '%', 1]

Ni/MgO
###Interface-driven giant tunnel magnetoresistance in (111)-oriented junctions|Keisuke Masuda,Hiroyoshi Itoh,Yoshio Miura###
(676104, 676107)
 We theoretically study the tunnel magnetoresistance (TMR) effect in(111)-oriented junctions Co/MgO/Co(111) and Ni/MgO/Ni(111).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[35.0, 2000, '%', 1]

Co
###Interface-driven giant tunnel magnetoresistance in (111)-oriented junctions|Keisuke Masuda,Hiroyoshi Itoh,Yoshio Miura###
(676117, 676117)
 The Co-basedjunction is shown to have a TMR ratio over 2000%, which is one order higherthan that of the Ni-based one.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 2000, '%', 0]

Ni
###Interface-driven giant tunnel magnetoresistance in (111)-oriented junctions|Keisuke Masuda,Hiroyoshi Itoh,Yoshio Miura###
(676165, 676165)
 The Co-basedjunction is shown to have a TMR ratio over 2000%, which is one order higherthan that of the Ni-based one.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 2000, '%', 0]

Fe(Co)/MgO
###Interface-driven giant tunnel magnetoresistance in (111)-oriented junctions|Keisuke Masuda,Hiroyoshi Itoh,Yoshio Miura###
(676288, 676294)
 This differs essentially from theconventional coherent tunneling mechanism of high TMR ratios inFe(Co)/MgO/Fe(Co)(001).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[146.0, 2000, '%', 2]

Fe(Co)
###Interface-driven giant tunnel magnetoresistance in (111)-oriented junctions|Keisuke Masuda,Hiroyoshi Itoh,Yoshio Miura###
(676296, 676299)
 This differs essentially from theconventional coherent tunneling mechanism of high TMR ratios inFe(Co)/MgO/Fe(Co)(001).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 2000, '%', 2]

F
###Theory of Domain-Wall Magnetoresistance in Metallic Antiferromagnets|Jun-Hui Zheng,Arne Brataas,Mathias Kläui,Alireza Qaiumzadeh###
(676364, 676364)
 We develop a theory to compute the domain-wall magnetoresistance (DWMR) inantiferromagnetic (AFM) metals with different spin structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Theory of Domain-Wall Magnetoresistance in Metallic Antiferromagnets|Jun-Hui Zheng,Arne Brataas,Mathias Kläui,Alireza Qaiumzadeh###
(676379, 676379)
 In the diffusivetransport regime, the DWMR can be either it negative or positive dependingon the domain-wall orientation and spin structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Theory of Domain-Wall Magnetoresistance in Metallic Antiferromagnets|Jun-Hui Zheng,Arne Brataas,Mathias Kläui,Alireza Qaiumzadeh###
(676432, 676432)
 In contrast, when thetransport is in the ballistic regime, the DWMR is always positive, and themagnitude depends on the width and orientation of the domain wall.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HoB12
###Suppression of indirect exchange and symmetry breaking in antiferromagnetic metal with dynamic charge stripes|K. Krasikov,V. Glushkov,S. Demishev,A. Khoroshilov,A. Bogach,V. Voronov,N. Shitsevalova,V. Filipov,S. Gabani,K. Flachbart,K. Siemensmeyer,N. Sluchanko###
(676654, 676656)
 Precise angle-resolved magnetoresistance (ARM) measurements are applied toreveal the origin for the lowering of symmetry in electron transport and theemergence of a huge number of magnetic phases in the ground state ofantiferromagnetic metal HoB12 with fcc crystal structure.
Featurization terminated normally.
0,0,0,0,0.9230769230769231,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 110, '>', 1]

H
###Suppression of indirect exchange and symmetry breaking in antiferromagnetic metal with dynamic charge stripes|K. Krasikov,V. Glushkov,S. Demishev,A. Khoroshilov,A. Bogach,V. Voronov,N. Shitsevalova,V. Filipov,S. Gabani,K. Flachbart,K. Siemensmeyer,N. Sluchanko###
(676678, 676678)
 By analyzing of thepolar H-theta-phi magnetic phase diagrams of this compound reconstructed fromthe experimental ARM data we argue that non-equilibrium electron densityoscillations (dynamic charge stripes) are responsible for the suppression ofthe indirect R<missing VAR>KKY exchange along <110> directions between the nearestneighboring magnetic moments of Ho3 ions in this strongly correlated electronsystem.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 110, '>', 0]

KKY
###Suppression of indirect exchange and symmetry breaking in antiferromagnetic metal with dynamic charge stripes|K. Krasikov,V. Glushkov,S. Demishev,A. Khoroshilov,A. Bogach,V. Voronov,N. Shitsevalova,V. Filipov,S. Gabani,K. Flachbart,K. Siemensmeyer,N. Sluchanko###
(676754, 676756)
 By analyzing of thepolar H-theta-phi magnetic phase diagrams of this compound reconstructed fromthe experimental ARM data we argue that non-equilibrium electron densityoscillations (dynamic charge stripes) are responsible for the suppression ofthe indirect R<missing VAR>KKY exchange along <110> directions between the nearestneighboring magnetic moments of Ho3 ions in this strongly correlated electronsystem.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 110, '>', 0]

Ho3
###Suppression of indirect exchange and symmetry breaking in antiferromagnetic metal with dynamic charge stripes|K. Krasikov,V. Glushkov,S. Demishev,A. Khoroshilov,A. Bogach,V. Voronov,N. Shitsevalova,V. Filipov,S. Gabani,K. Flachbart,K. Siemensmeyer,N. Sluchanko###
(676783, 676784)
 By analyzing of thepolar H-theta-phi magnetic phase diagrams of this compound reconstructed fromthe experimental ARM data we argue that non-equilibrium electron densityoscillations (dynamic charge stripes) are responsible for the suppression ofthe indirect R<missing VAR>KKY exchange along <110> directions between the nearestneighboring magnetic moments of Ho3 ions in this strongly correlated electronsystem.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 110, '>', 0]

InSe
###Electron-Electron Interactions in 2D Semiconductor InSe|Arvind Shankar Kumar,Kasun Premasiri,Min Gao,U. Rajesh Kumar,Raman Sankar,Fang-Cheng Chou,Xuan P. A. Gao###
(676821, 676822)
Electron-Electron Interactions in 2D Semiconductor InSe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 2, 'D', 0],[16.0, 2, 'D', 1],[77.0, 2, 'D', 2]

InSe
###Electron-Electron Interactions in 2D Semiconductor InSe|Arvind Shankar Kumar,Kasun Premasiri,Min Gao,U. Rajesh Kumar,Raman Sankar,Fang-Cheng Chou,Xuan P. A. Gao###
(676904, 676905)
 We report the observationof a negative parabolic magnetoresistance (MR) in multilayer 2D semiconductorInSe beyond the low-field weak localization/antilocalization regime, andprovide evidence for the EEI origin of this MR behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 2, 'D', 2],[66.0, 2, 'D', 1],[5.0, 2, 'D', 0]

I
###Electron-Electron Interactions in 2D Semiconductor InSe|Arvind Shankar Kumar,Kasun Premasiri,Min Gao,U. Rajesh Kumar,Raman Sankar,Fang-Cheng Chou,Xuan P. A. Gao###
(676937, 676937)
 We report the observationof a negative parabolic magnetoresistance (MR) in multilayer 2D semiconductorInSe beyond the low-field weak localization/antilocalization regime, andprovide evidence for the EEI origin of this MR behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 2, 'D', 2],[99.0, 2, 'D', 1],[38.0, 2, 'D', 0]

F0
###Electron-Electron Interactions in 2D Semiconductor InSe|Arvind Shankar Kumar,Kasun Premasiri,Min Gao,U. Rajesh Kumar,Raman Sankar,Fang-Cheng Chou,Xuan P. A. Gao###
(677035, 677036)
 Further, we analyzethis negative parabolic MR and other observed quantum transport signatures ofEEIs (temperature dependent conductance and Hall coefficient) within theframework of Fermi liquid theory and extract the gate voltage tunable Fermiliquid parameter F0sigma which quantifies the electron spin-exchangeinteraction strength.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[218.0, 2, 'D', 3],[197.0, 2, 'D', 2],[136.0, 2, 'D', 1]

NiO/Pt
###Concurrent magneto-optical imaging and magneto-transport readout of electrical switching of insulating antiferromagnetic thin films|Felix Schreiber,Lorenzo Baldrati,Christin Schmitt,Rafael Ramos,Eiji Saitoh,Romain Lebrun,Mathias Kläui###
(677138, 677141)
 We demonstrate stable and reversible current induced switching of large-area(> 100;mu m<missing VAR>2) antiferromagnetic domains in NiO/Pt by performing concurrenttransport and magneto-optical imaging measurements in an adapted Kerrmicroscope.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[14.0, 100, ';', 0]

LaAu
###Tuning of charge density wave transitions in LaAu$_x$Sb$_2$ by pressure and Au-stoichiometry|Li Xiang,Dominic H. Ryan,Warren E. Straszheim,Paul C. Canfield,Sergey L. Bud'ko###
(677362, 677363)
Tuning of charge density wave transitions in LaAux<missing VAR>Sb2 by pressure and Au-stoichiometry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 90, 'K', 1],[113.0, 80, 'K', 2],[141.0, 10, 'kbar', 2],[154.0, 17, 'kbar', 2]

Sb2
###Tuning of charge density wave transitions in LaAu$_x$Sb$_2$ by pressure and Au-stoichiometry|Li Xiang,Dominic H. Ryan,Warren E. Straszheim,Paul C. Canfield,Sergey L. Bud'ko###
(677365, 677366)
Tuning of charge density wave transitions in LaAux<missing VAR>Sb2 by pressure and Au-stoichiometry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 90, 'K', 1],[110.0, 80, 'K', 2],[138.0, 10, 'kbar', 2],[151.0, 17, 'kbar', 2]

Au
###Tuning of charge density wave transitions in LaAu$_x$Sb$_2$ by pressure and Au-stoichiometry|Li Xiang,Dominic H. Ryan,Warren E. Straszheim,Paul C. Canfield,Sergey L. Bud'ko###
(677374, 677374)
Tuning of charge density wave transitions in LaAux<missing VAR>Sb2 by pressure and Au-stoichiometry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 90, 'K', 1],[102.0, 80, 'K', 2],[130.0, 10, 'kbar', 2],[143.0, 17, 'kbar', 2]

LaAu
###Tuning of charge density wave transitions in LaAu$_x$Sb$_2$ by pressure and Au-stoichiometry|Li Xiang,Dominic H. Ryan,Warren E. Straszheim,Paul C. Canfield,Sergey L. Bud'ko###
(677397, 677398)
 Two charge density wave transition can be detected in LaAux<missing VAR>Sb2 at  110and  90 K by careful electrical transport measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 90, 'K', 0],[78.0, 80, 'K', 1],[106.0, 10, 'kbar', 1],[119.0, 17, 'kbar', 1]

Sb2
###Tuning of charge density wave transitions in LaAu$_x$Sb$_2$ by pressure and Au-stoichiometry|Li Xiang,Dominic H. Ryan,Warren E. Straszheim,Paul C. Canfield,Sergey L. Bud'ko###
(677400, 677401)
 Two charge density wave transition can be detected in LaAux<missing VAR>Sb2 at  110and  90 K by careful electrical transport measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 90, 'K', 0],[75.0, 80, 'K', 1],[103.0, 10, 'kbar', 1],[116.0, 17, 'kbar', 1]

Au
###Tuning of charge density wave transitions in LaAu$_x$Sb$_2$ by pressure and Au-stoichiometry|Li Xiang,Dominic H. Ryan,Warren E. Straszheim,Paul C. Canfield,Sergey L. Bud'ko###
(677433, 677433)
 Whereas control of theAu site occupancy in LaAux<missing VAR>Sb2 (for 0.9 < x<missing VAR> < 1.0) can suppress each ofthese transitions by  80 K, the application of hydrostatic pressure cancompletely suppress the lower transition by  10 kbar and the upper transitionby  17 kbar.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 90, 'K', 1],[43.0, 80, 'K', 0],[71.0, 10, 'kbar', 0],[84.0, 17, 'kbar', 0]

LaAu
###Tuning of charge density wave transitions in LaAu$_x$Sb$_2$ by pressure and Au-stoichiometry|Li Xiang,Dominic H. Ryan,Warren E. Straszheim,Paul C. Canfield,Sergey L. Bud'ko###
(677441, 677442)
 Whereas control of theAu site occupancy in LaAux<missing VAR>Sb2 (for 0.9 < x<missing VAR> < 1.0) can suppress each ofthese transitions by  80 K, the application of hydrostatic pressure cancompletely suppress the lower transition by  10 kbar and the upper transitionby  17 kbar.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 90, 'K', 1],[34.0, 80, 'K', 0],[62.0, 10, 'kbar', 0],[75.0, 17, 'kbar', 0]

Sb2
###Tuning of charge density wave transitions in LaAu$_x$Sb$_2$ by pressure and Au-stoichiometry|Li Xiang,Dominic H. Ryan,Warren E. Straszheim,Paul C. Canfield,Sergey L. Bud'ko###
(677444, 677445)
 Whereas control of theAu site occupancy in LaAux<missing VAR>Sb2 (for 0.9 < x<missing VAR> < 1.0) can suppress each ofthese transitions by  80 K, the application of hydrostatic pressure cancompletely suppress the lower transition by  10 kbar and the upper transitionby  17 kbar.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 90, 'K', 1],[31.0, 80, 'K', 0],[59.0, 10, 'kbar', 0],[72.0, 17, 'kbar', 0]

Fe3O4/Co1-xZn
###Tunnel Magnetoresistance in Self-Assemblies of Exchange Coupled Core/Shell Nanoparticles|Fernando Fabris,Enio Lima Jr.,Cynthia Quinteros,Lucas Nener,Mara Granada,Martín Sirena,Roberto D. Zysler,Horacio E. Troiani,Víctor Leborán,Francisco Rivadulla,Elin L. Winkler###
(677647, 677656)
 We report the precise control of tunneling magnetoresistance (TMR) in devicesof self-assembled core/shell Fe3O4/Co1-xZnx<missing VAR>Fe2O4nanoparticles (0leq x<missing VAR>leq 1).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

IV
###Large longitudinal magnetoresistance of multivalley systems|Yuki Mitani,Yuki Fuseya###
(678019, 678020)
 Our theoretical results agreewith the experiments of large longitudinal MR in IV-VI semiconductors,especially in PbTe, for a wide range of temperatures, except for linear MR atlow temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

VI
###Large longitudinal magnetoresistance of multivalley systems|Yuki Mitani,Yuki Fuseya###
(678022, 678023)
 Our theoretical results agreewith the experiments of large longitudinal MR in IV-VI semiconductors,especially in PbTe, for a wide range of temperatures, except for linear MR atlow temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PbTe
###Large longitudinal magnetoresistance of multivalley systems|Yuki Mitani,Yuki Fuseya###
(678033, 678034)
 Our theoretical results agreewith the experiments of large longitudinal MR in IV-VI semiconductors,especially in PbTe, for a wide range of temperatures, except for linear MR atlow temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaAs/LaBi
###Signatures of non-trivial band topology in LaAs/LaBi heterostructure|Payal Wadhwa,T. J. Dhilip Kumar,Alok Shukla,Rakesh Kumar###
(678089, 678093)
Signatures of non-trivial band topology in LaAs/LaBi heterostructure.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

In
###Signatures of non-trivial band topology in LaAs/LaBi heterostructure|Payal Wadhwa,T. J. Dhilip Kumar,Alok Shukla,Rakesh Kumar###
(678098, 678098)
 In this article, we investigate non-trivial topological features in aheterostructure of extreme magnetoresistance (XMR) materials LaAs and LaBiusing density functional theory (DFT).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaAs
###Signatures of non-trivial band topology in LaAs/LaBi heterostructure|Payal Wadhwa,T. J. Dhilip Kumar,Alok Shukla,Rakesh Kumar###
(678138, 678139)
 In this article, we investigate non-trivial topological features in aheterostructure of extreme magnetoresistance (XMR) materials LaAs and LaBiusing density functional theory (DFT).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaBi
###Signatures of non-trivial band topology in LaAs/LaBi heterostructure|Payal Wadhwa,T. J. Dhilip Kumar,Alok Shukla,Rakesh Kumar###
(678143, 678144)
 In this article, we investigate non-trivial topological features in aheterostructure of extreme magnetoresistance (XMR) materials LaAs and LaBiusing density functional theory (DFT).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Signatures of non-trivial band topology in LaAs/LaBi heterostructure|Payal Wadhwa,T. J. Dhilip Kumar,Alok Shukla,Rakesh Kumar###
(678220, 678220)
 In addition, itselectron and hole carrier densities ratio is also calculated to investigate thepossibility to possess XMR effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Electrical and Thermal Transport in Antiferromagnet-Superconductor Junctions|Martin F. Jakobsen,Kristian B. Naess,Paramita Dutta,Arne Brataas,Alireza Qaiumzadeh###
(678355, 678355)
 We demonstrate that antiferromagnet-superconductor (AF-S) junctions showqualitatively different transport properties than normal metal-superconductor(N--S) and ferromagnet-superconductor (F-S) junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Electrical and Thermal Transport in Antiferromagnet-Superconductor Junctions|Martin F. Jakobsen,Kristian B. Naess,Paramita Dutta,Arne Brataas,Alireza Qaiumzadeh###
(678357, 678357)
 We demonstrate that antiferromagnet-superconductor (AF-S) junctions showqualitatively different transport properties than normal metal-superconductor(N--S) and ferromagnet-superconductor (F-S) junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Electrical and Thermal Transport in Antiferromagnet-Superconductor Junctions|Martin F. Jakobsen,Kristian B. Naess,Paramita Dutta,Arne Brataas,Alireza Qaiumzadeh###
(678383, 678383)
 We demonstrate that antiferromagnet-superconductor (AF-S) junctions showqualitatively different transport properties than normal metal-superconductor(N--S) and ferromagnet-superconductor (F-S) junctions.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Electrical and Thermal Transport in Antiferromagnet-Superconductor Junctions|Martin F. Jakobsen,Kristian B. Naess,Paramita Dutta,Arne Brataas,Alireza Qaiumzadeh###
(678386, 678386)
 We demonstrate that antiferromagnet-superconductor (AF-S) junctions showqualitatively different transport properties than normal metal-superconductor(N--S) and ferromagnet-superconductor (F-S) junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Electrical and Thermal Transport in Antiferromagnet-Superconductor Junctions|Martin F. Jakobsen,Kristian B. Naess,Paramita Dutta,Arne Brataas,Alireza Qaiumzadeh###
(678396, 678396)
 We demonstrate that antiferromagnet-superconductor (AF-S) junctions showqualitatively different transport properties than normal metal-superconductor(N--S) and ferromagnet-superconductor (F-S) junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Electrical and Thermal Transport in Antiferromagnet-Superconductor Junctions|Martin F. Jakobsen,Kristian B. Naess,Paramita Dutta,Arne Brataas,Alireza Qaiumzadeh###
(678398, 678398)
 We demonstrate that antiferromagnet-superconductor (AF-S) junctions showqualitatively different transport properties than normal metal-superconductor(N--S) and ferromagnet-superconductor (F-S) junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Electrical and Thermal Transport in Antiferromagnet-Superconductor Junctions|Martin F. Jakobsen,Kristian B. Naess,Paramita Dutta,Arne Brataas,Alireza Qaiumzadeh###
(678432, 678432)
 We attribute thesetransport features to presence of two new scattering processes in AF--Sjunctions, i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Electrical and Thermal Transport in Antiferromagnet-Superconductor Junctions|Martin F. Jakobsen,Kristian B. Naess,Paramita Dutta,Arne Brataas,Alireza Qaiumzadeh###
(678435, 678435)
 We attribute thesetransport features to presence of two new scattering processes in AF--Sjunctions, i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Electrical and Thermal Transport in Antiferromagnet-Superconductor Junctions|Martin F. Jakobsen,Kristian B. Naess,Paramita Dutta,Arne Brataas,Alireza Qaiumzadeh###
(678526, 678526)
Furthermore, we show that the interplay between the Neel vector direction andthe interfacial Rashba spin-orbit coupling leads to a large anisotropicmagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Electrical and Thermal Transport in Antiferromagnet-Superconductor Junctions|Martin F. Jakobsen,Kristian B. Naess,Paramita Dutta,Arne Brataas,Alireza Qaiumzadeh###
(678573, 678573)
 The unusual transport properties make AF--S interfacesunique among the traditional condensed-matter-system-based superconductingjunctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Electrical and Thermal Transport in Antiferromagnet-Superconductor Junctions|Martin F. Jakobsen,Kristian B. Naess,Paramita Dutta,Arne Brataas,Alireza Qaiumzadeh###
(678576, 678576)
 The unusual transport properties make AF--S interfacesunique among the traditional condensed-matter-system-based superconductingjunctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Intrinsic mechanism for anisotropic magnetoresistance and experimental confirmation in Co$_x$Fe$_{1-x}$ single-crystal films|F. L. Zeng,Z. Y. Ren,Y. Li,J. Y. Zeng,M. W. Jia,J. Miao,A. Hoffmann,W. Zhang,Y. Z. Wu,Z. Yuan###
(678629, 678629)
Intrinsic mechanism for anisotropic magnetoresistance and experimental confirmation in Cox<missing VAR>Fe1-x single-crystal films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe1-x
###Intrinsic mechanism for anisotropic magnetoresistance and experimental confirmation in Co$_x$Fe$_{1-x}$ single-crystal films|F. L. Zeng,Z. Y. Ren,Y. Li,J. Y. Zeng,M. W. Jia,J. Miao,A. Hoffmann,W. Zhang,Y. Z. Wu,Z. Yuan###
(678631, 678634)
Intrinsic mechanism for anisotropic magnetoresistance and experimental confirmation in Cox<missing VAR>Fe1-x single-crystal films.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

Co
###Intrinsic mechanism for anisotropic magnetoresistance and experimental confirmation in Co$_x$Fe$_{1-x}$ single-crystal films|F. L. Zeng,Z. Y. Ren,Y. Li,J. Y. Zeng,M. W. Jia,J. Miao,A. Hoffmann,W. Zhang,Y. Z. Wu,Z. Yuan###
(678679, 678679)
 Using first-principles transport calculations, we predict that theanisotropic magnetoresistance (AMR) of single-crystal Cox<missing VAR>Fe1-x alloysis strongly dependent on the current orientation and alloy concentration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe1-x
###Intrinsic mechanism for anisotropic magnetoresistance and experimental confirmation in Co$_x$Fe$_{1-x}$ single-crystal films|F. L. Zeng,Z. Y. Ren,Y. Li,J. Y. Zeng,M. W. Jia,J. Miao,A. Hoffmann,W. Zhang,Y. Z. Wu,Z. Yuan###
(678681, 678684)
 Using first-principles transport calculations, we predict that theanisotropic magnetoresistance (AMR) of single-crystal Cox<missing VAR>Fe1-x alloysis strongly dependent on the current orientation and alloy concentration.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

CaAgP
###High-Mobility Carriers Induced by Chemical Doping in the Candidate Nodal-Line Semimetal CaAgP|Yoshihiko Okamoto,Kazushige Saigusa,Taichi Wada,Youichi Yamakawa,Ai Yamakage,Takao Sasagawa,Naoyuki Katayama,Hiroshi Takatsu,Hiroshi Kageyama,Koshi Takenaka###
(678902, 678904)
High-Mobility Carriers Induced by Chemical Doping in the Candidate Nodal-Line Semimetal CaAgP.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CaAgP
###High-Mobility Carriers Induced by Chemical Doping in the Candidate Nodal-Line Semimetal CaAgP|Yoshihiko Okamoto,Kazushige Saigusa,Taichi Wada,Youichi Yamakawa,Ai Yamakage,Takao Sasagawa,Naoyuki Katayama,Hiroshi Takatsu,Hiroshi Kageyama,Koshi Takenaka###
(678934, 678936)
 We report the electronic properties of single crystals of candidatenodal-line semimetal CaAgP.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CaAgP
###High-Mobility Carriers Induced by Chemical Doping in the Candidate Nodal-Line Semimetal CaAgP|Yoshihiko Okamoto,Kazushige Saigusa,Taichi Wada,Youichi Yamakawa,Ai Yamakage,Takao Sasagawa,Naoyuki Katayama,Hiroshi Takatsu,Hiroshi Kageyama,Koshi Takenaka###
(678947, 678949)
 The transport properties of CaAgP are understoodwithin the framework of a hole-doped nodal-line semimetal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###High-Mobility Carriers Induced by Chemical Doping in the Candidate Nodal-Line Semimetal CaAgP|Yoshihiko Okamoto,Kazushige Saigusa,Taichi Wada,Youichi Yamakawa,Ai Yamakage,Takao Sasagawa,Naoyuki Katayama,Hiroshi Takatsu,Hiroshi Kageyama,Koshi Takenaka###
(678977, 678977)
 In contrast,Pd-doped CaAgP shows a drastic increase of magnetoresistance at low magneticfields and a strong decrease of electrical resistivity at low temperaturesprobably due to weak antilocalization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pd
###High-Mobility Carriers Induced by Chemical Doping in the Candidate Nodal-Line Semimetal CaAgP|Yoshihiko Okamoto,Kazushige Saigusa,Taichi Wada,Youichi Yamakawa,Ai Yamakage,Takao Sasagawa,Naoyuki Katayama,Hiroshi Takatsu,Hiroshi Kageyama,Koshi Takenaka###
(678983, 678983)
 In contrast,Pd-doped CaAgP shows a drastic increase of magnetoresistance at low magneticfields and a strong decrease of electrical resistivity at low temperaturesprobably due to weak antilocalization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CaAgP
###High-Mobility Carriers Induced by Chemical Doping in the Candidate Nodal-Line Semimetal CaAgP|Yoshihiko Okamoto,Kazushige Saigusa,Taichi Wada,Youichi Yamakawa,Ai Yamakage,Takao Sasagawa,Naoyuki Katayama,Hiroshi Takatsu,Hiroshi Kageyama,Koshi Takenaka###
(678987, 678989)
 In contrast,Pd-doped CaAgP shows a drastic increase of magnetoresistance at low magneticfields and a strong decrease of electrical resistivity at low temperaturesprobably due to weak antilocalization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pd
###High-Mobility Carriers Induced by Chemical Doping in the Candidate Nodal-Line Semimetal CaAgP|Yoshihiko Okamoto,Kazushige Saigusa,Taichi Wada,Youichi Yamakawa,Ai Yamakage,Takao Sasagawa,Naoyuki Katayama,Hiroshi Takatsu,Hiroshi Kageyama,Koshi Takenaka###
(679057, 679057)
 Hall conductivity data indicated thatthe Pd-doped CaAgP has not only hole carriers induced by the Pd doping, butalso high-mobility electron carriers in proximity of the Dirac point.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CaAgP
###High-Mobility Carriers Induced by Chemical Doping in the Candidate Nodal-Line Semimetal CaAgP|Yoshihiko Okamoto,Kazushige Saigusa,Taichi Wada,Youichi Yamakawa,Ai Yamakage,Takao Sasagawa,Naoyuki Katayama,Hiroshi Takatsu,Hiroshi Kageyama,Koshi Takenaka###
(679061, 679063)
 Hall conductivity data indicated thatthe Pd-doped CaAgP has not only hole carriers induced by the Pd doping, butalso high-mobility electron carriers in proximity of the Dirac point.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pd
###High-Mobility Carriers Induced by Chemical Doping in the Candidate Nodal-Line Semimetal CaAgP|Yoshihiko Okamoto,Kazushige Saigusa,Taichi Wada,Youichi Yamakawa,Ai Yamakage,Takao Sasagawa,Naoyuki Katayama,Hiroshi Takatsu,Hiroshi Kageyama,Koshi Takenaka###
(679081, 679081)
 Hall conductivity data indicated thatthe Pd-doped CaAgP has not only hole carriers induced by the Pd doping, butalso high-mobility electron carriers in proximity of the Dirac point.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pd
###High-Mobility Carriers Induced by Chemical Doping in the Candidate Nodal-Line Semimetal CaAgP|Yoshihiko Okamoto,Kazushige Saigusa,Taichi Wada,Youichi Yamakawa,Ai Yamakage,Takao Sasagawa,Naoyuki Katayama,Hiroshi Takatsu,Hiroshi Kageyama,Koshi Takenaka###
(679119, 679119)
Electrical resistivity of Pd-doped CaAgP also showed a superconductingtransition with onset temperature of 1.7-1.8 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CaAgP
###High-Mobility Carriers Induced by Chemical Doping in the Candidate Nodal-Line Semimetal CaAgP|Yoshihiko Okamoto,Kazushige Saigusa,Taichi Wada,Youichi Yamakawa,Ai Yamakage,Takao Sasagawa,Naoyuki Katayama,Hiroshi Takatsu,Hiroshi Kageyama,Koshi Takenaka###
(679123, 679125)
Electrical resistivity of Pd-doped CaAgP also showed a superconductingtransition with onset temperature of 1.7-1.8 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###High-Mobility Carriers Induced by Chemical Doping in the Candidate Nodal-Line Semimetal CaAgP|Yoshihiko Okamoto,Kazushige Saigusa,Taichi Wada,Youichi Yamakawa,Ai Yamakage,Takao Sasagawa,Naoyuki Katayama,Hiroshi Takatsu,Hiroshi Kageyama,Koshi Takenaka###
(679150, 679150)
Electrical resistivity of Pd-doped CaAgP also showed a superconductingtransition with onset temperature of 1.7-1.8 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Over 1% magnetoresistance ratio at room temperature in non-degenerate silicon-based lateral spin valves|H. Koike,S. Lee,R. Ohshima,E. Shigematsu,M. Goto,S. Miwa,Y. Suzuki,T. Sasaki,Y. Ando,M. Shiraishi###
(679218, 679218)
 To augment the magnetoresistance (MR) ratio of n<missing VAR>-type non-degenerate Si-basedlateral spin valves (Si-L<missing VAR>SVs), we modify the doping profile in the Si layer andintroduce a larger local strain into the Si channel by changing a cappinginsulator.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 1, '%', 1],[82.0, 1.4, '%', 1]

Si
###Over 1% magnetoresistance ratio at room temperature in non-degenerate silicon-based lateral spin valves|H. Koike,S. Lee,R. Ohshima,E. Shigematsu,M. Goto,S. Miwa,Y. Suzuki,T. Sasaki,Y. Ando,M. Shiraishi###
(679230, 679230)
 To augment the magnetoresistance (MR) ratio of n<missing VAR>-type non-degenerate Si-basedlateral spin valves (Si-L<missing VAR>SVs), we modify the doping profile in the Si layer andintroduce a larger local strain into the Si channel by changing a cappinginsulator.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 1, '%', 1],[70.0, 1.4, '%', 1]

S
###Over 1% magnetoresistance ratio at room temperature in non-degenerate silicon-based lateral spin valves|H. Koike,S. Lee,R. Ohshima,E. Shigematsu,M. Goto,S. Miwa,Y. Suzuki,T. Sasaki,Y. Ando,M. Shiraishi###
(679233, 679233)
 To augment the magnetoresistance (MR) ratio of n<missing VAR>-type non-degenerate Si-basedlateral spin valves (Si-L<missing VAR>SVs), we modify the doping profile in the Si layer andintroduce a larger local strain into the Si channel by changing a cappinginsulator.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 1, '%', 1],[67.0, 1.4, '%', 1]

Si
###Over 1% magnetoresistance ratio at room temperature in non-degenerate silicon-based lateral spin valves|H. Koike,S. Lee,R. Ohshima,E. Shigematsu,M. Goto,S. Miwa,Y. Suzuki,T. Sasaki,Y. Ando,M. Shiraishi###
(679252, 679252)
 To augment the magnetoresistance (MR) ratio of n<missing VAR>-type non-degenerate Si-basedlateral spin valves (Si-L<missing VAR>SVs), we modify the doping profile in the Si layer andintroduce a larger local strain into the Si channel by changing a cappinginsulator.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 1, '%', 1],[48.0, 1.4, '%', 1]

Si
###Over 1% magnetoresistance ratio at room temperature in non-degenerate silicon-based lateral spin valves|H. Koike,S. Lee,R. Ohshima,E. Shigematsu,M. Goto,S. Miwa,Y. Suzuki,T. Sasaki,Y. Ando,M. Shiraishi###
(679273, 679273)
 To augment the magnetoresistance (MR) ratio of n<missing VAR>-type non-degenerate Si-basedlateral spin valves (Si-L<missing VAR>SVs), we modify the doping profile in the Si layer andintroduce a larger local strain into the Si channel by changing a cappinginsulator.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 1, '%', 1],[27.0, 1.4, '%', 1]

Si
###Over 1% magnetoresistance ratio at room temperature in non-degenerate silicon-based lateral spin valves|H. Koike,S. Lee,R. Ohshima,E. Shigematsu,M. Goto,S. Miwa,Y. Suzuki,T. Sasaki,Y. Ando,M. Shiraishi###
(679311, 679311)
 The highest MR ratio of 1.4% is achieved in the Si-L<missing VAR>SVs throughthese improvements, with significant roles played by a reduction in theresistance-area product of the ferromagnetic contacts and an enhancement of themomentum relaxation time in the Si channel.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 1, '%', 2],[11.0, 1.4, '%', 0]

S
###Over 1% magnetoresistance ratio at room temperature in non-degenerate silicon-based lateral spin valves|H. Koike,S. Lee,R. Ohshima,E. Shigematsu,M. Goto,S. Miwa,Y. Suzuki,T. Sasaki,Y. Ando,M. Shiraishi###
(679314, 679314)
 The highest MR ratio of 1.4% is achieved in the Si-L<missing VAR>SVs throughthese improvements, with significant roles played by a reduction in theresistance-area product of the ferromagnetic contacts and an enhancement of themomentum relaxation time in the Si channel.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 1, '%', 2],[14.0, 1.4, '%', 0]

Si
###Over 1% magnetoresistance ratio at room temperature in non-degenerate silicon-based lateral spin valves|H. Koike,S. Lee,R. Ohshima,E. Shigematsu,M. Goto,S. Miwa,Y. Suzuki,T. Sasaki,Y. Ando,M. Shiraishi###
(679379, 679379)
 The highest MR ratio of 1.4% is achieved in the Si-L<missing VAR>SVs throughthese improvements, with significant roles played by a reduction in theresistance-area product of the ferromagnetic contacts and an enhancement of themomentum relaxation time in the Si channel.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[216.0, 1, '%', 2],[79.0, 1.4, '%', 0]

(FSF)
###Pseudo spin-valve switch based on ferromagnet/superconductor/ferromagnet trilayer microbridge|L. N. Karelina,V. V. Bol'ginov,Sh. A. Erkenov,S. V. Egorov,I. A. Golovchanskiy,V. I. Chichkov,A. ben Hamida,V. V. Ryazanov###
(679438, 679442)
 A noticeable magnetoresistive effect has been observed onferromagnet/superconductor/ferromagnet (FSF) microbridges based on dilutedferromagnetic PdFe alloy containing as small as 1% magnetic atoms.
Featurization successful!
0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 1, '%', 0]

PdFe
###Pseudo spin-valve switch based on ferromagnet/superconductor/ferromagnet trilayer microbridge|L. N. Karelina,V. V. Bol'ginov,Sh. A. Erkenov,S. V. Egorov,I. A. Golovchanskiy,V. I. Chichkov,A. ben Hamida,V. V. Ryazanov###
(679455, 679456)
 A noticeable magnetoresistive effect has been observed onferromagnet/superconductor/ferromagnet (FSF) microbridges based on dilutedferromagnetic PdFe alloy containing as small as 1% magnetic atoms.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 1, '%', 0]

FSF
###Pseudo spin-valve switch based on ferromagnet/superconductor/ferromagnet trilayer microbridge|L. N. Karelina,V. V. Bol'ginov,Sh. A. Erkenov,S. V. Egorov,I. A. Golovchanskiy,V. I. Chichkov,A. ben Hamida,V. V. Ryazanov###
(679483, 679485)
Microstructuring of the FSF trilayers does not destroy the effect the mostpronounced curves were obtained on the smallest bridges of 6-8 um wide and10-15 um long.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 1, '%', 1]

P
###Pseudo spin-valve switch based on ferromagnet/superconductor/ferromagnet trilayer microbridge|L. N. Karelina,V. V. Bol'ginov,Sh. A. Erkenov,S. V. Egorov,I. A. Golovchanskiy,V. I. Chichkov,A. ben Hamida,V. V. Ryazanov###
(679577, 679577)
 Below the superconducting transition we are able to control thecritical current of microbridges by switching between P and AP orientations ofmagnetizations of PdFe layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 1, '%', 2]

P
###Pseudo spin-valve switch based on ferromagnet/superconductor/ferromagnet trilayer microbridge|L. N. Karelina,V. V. Bol'ginov,Sh. A. Erkenov,S. V. Egorov,I. A. Golovchanskiy,V. I. Chichkov,A. ben Hamida,V. V. Ryazanov###
(679582, 679582)
 Below the superconducting transition we are able to control thecritical current of microbridges by switching between P and AP orientations ofmagnetizations of PdFe layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 1, '%', 2]

PdFe
###Pseudo spin-valve switch based on ferromagnet/superconductor/ferromagnet trilayer microbridge|L. N. Karelina,V. V. Bol'ginov,Sh. A. Erkenov,S. V. Egorov,I. A. Golovchanskiy,V. I. Chichkov,A. ben Hamida,V. V. Ryazanov###
(679593, 679594)
 Below the superconducting transition we are able to control thecritical current of microbridges by switching between P and AP orientations ofmagnetizations of PdFe layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 1, '%', 2]

FSF
###Pseudo spin-valve switch based on ferromagnet/superconductor/ferromagnet trilayer microbridge|L. N. Karelina,V. V. Bol'ginov,Sh. A. Erkenov,S. V. Egorov,I. A. Golovchanskiy,V. I. Chichkov,A. ben Hamida,V. V. Ryazanov###
(679605, 679607)
 The operation of FSF-bridge as a magnetic switchis demonstrated in several regimes providing significant voltage discriminationbetween digital states or remarkably low bit error rate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 1, '%', 3]

TiN
###Quantum criticality and multiple crossing points in the magnetoresistance of thin TiN-films|K. Kronfeldner,T. I. Baturina,C. Strunk###
(679688, 679689)
Quantum criticality and multiple crossing points in the magnetoresistance of thin TiN-films.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Quantum criticality and multiple crossing points in the magnetoresistance of thin TiN-films|K. Kronfeldner,T. I. Baturina,C. Strunk###
(679704, 679704)
 We have measured R(T,B) of a TiN thin-film very close to thedisorder-driven superconductor-insulator transition but still superconductingat zero field and low temperatures.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TiN
###Quantum criticality and multiple crossing points in the magnetoresistance of thin TiN-films|K. Kronfeldner,T. I. Baturina,C. Strunk###
(679711, 679712)
 We have measured R(T,B) of a TiN thin-film very close to thedisorder-driven superconductor-insulator transition but still superconductingat zero field and low temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Quantum criticality and multiple crossing points in the magnetoresistance of thin TiN-films|K. Kronfeldner,T. I. Baturina,C. Strunk###
(679757, 679757)
 In a magnetic field we find three distinctcrossing point of the magnetoresistance isotherms occur at magnetic fieldsBcX in three different temperature regions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Quantum criticality and multiple crossing points in the magnetoresistance of thin TiN-films|K. Kronfeldner,T. I. Baturina,C. Strunk###
(679795, 679795)
 In a magnetic field we find three distinctcrossing point of the magnetoresistance isotherms occur at magnetic fieldsBcX in three different temperature regions.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Quantum criticality and multiple crossing points in the magnetoresistance of thin TiN-films|K. Kronfeldner,T. I. Baturina,C. Strunk###
(679823, 679823)
 Each crossing point inR(T,B) corresponds to a plateau in R(T,BcX).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Quantum criticality and multiple crossing points in the magnetoresistance of thin TiN-films|K. Kronfeldner,T. I. Baturina,C. Strunk###
(679840, 679840)
 Each crossing point inR(T,B) corresponds to a plateau in R(T,BcX).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Dependency of high-speed write properties on external magnetic field in spin-orbit torque in-plane magnetoresistance devices|Yohei Shiokawa,Eiji Komura,Yugo Ishitani,Atsushi Tsumita,Keita Suda,Kosuke Hamanaka,Tomohiro Taniguchi,Tomoyuki Sasaki###
(679979, 679980)
 Spin-orbit torque (SOT) magnetoresistance (MR) devices have attractedattention for use in next-generation MR devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Dependency of high-speed write properties on external magnetic field in spin-orbit torque in-plane magnetoresistance devices|Yohei Shiokawa,Eiji Komura,Yugo Ishitani,Atsushi Tsumita,Keita Suda,Kosuke Hamanaka,Tomohiro Taniguchi,Tomoyuki Sasaki###
(680018, 680019)
 The SOT<missing VAR> devices are known toexhibit different write properties based on the relative angle between themagnetization direction of the free layer and the write-current direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Dependency of high-speed write properties on external magnetic field in spin-orbit torque in-plane magnetoresistance devices|Yohei Shiokawa,Eiji Komura,Yugo Ishitani,Atsushi Tsumita,Keita Suda,Kosuke Hamanaka,Tomohiro Taniguchi,Tomoyuki Sasaki###
(680109, 680109)
 In this study, we measured the external perpendicular-magnetic fielddependence of the threshold write current density and the write currentswitching probability using two types of in-plane magnetization SOT-MR devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Dependency of high-speed write properties on external magnetic field in spin-orbit torque in-plane magnetoresistance devices|Yohei Shiokawa,Eiji Komura,Yugo Ishitani,Atsushi Tsumita,Keita Suda,Kosuke Hamanaka,Tomohiro Taniguchi,Tomoyuki Sasaki###
(680172, 680173)
 In this study, we measured the external perpendicular-magnetic fielddependence of the threshold write current density and the write currentswitching probability using two types of in-plane magnetization SOT-MR devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Na2
###Interplay between strong correlations and electronic topology in the underlying kagome lattice of Na2/3CoO2|I. F. Gilmutdinov,R. Schönemann,D. Vignolles,C. Proust,I. R. Mukhamedshin,L. Balicas,H. Alloul###
(680216, 680217)
Interplay between strong correlations and electronic topology in the underlying kagome lattice of Na2/3CoO2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoO2
###Interplay between strong correlations and electronic topology in the underlying kagome lattice of Na2/3CoO2|I. F. Gilmutdinov,R. Schönemann,D. Vignolles,C. Proust,I. R. Mukhamedshin,L. Balicas,H. Alloul###
(680220, 680222)
Interplay between strong correlations and electronic topology in the underlying kagome lattice of Na2/3CoO2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Na2
###Interplay between strong correlations and electronic topology in the underlying kagome lattice of Na2/3CoO2|I. F. Gilmutdinov,R. Schönemann,D. Vignolles,C. Proust,I. R. Mukhamedshin,L. Balicas,H. Alloul###
(680257, 680258)
We present transport experiments in Na2/3CoO2 in which the Na orderdifferentiates a Co kagome sub-lattice in the triangular CoO2 layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoO2
###Interplay between strong correlations and electronic topology in the underlying kagome lattice of Na2/3CoO2|I. F. Gilmutdinov,R. Schönemann,D. Vignolles,C. Proust,I. R. Mukhamedshin,L. Balicas,H. Alloul###
(680261, 680263)
We present transport experiments in Na2/3CoO2 in which the Na orderdifferentiates a Co kagome sub-lattice in the triangular CoO2 layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Na
###Interplay between strong correlations and electronic topology in the underlying kagome lattice of Na2/3CoO2|I. F. Gilmutdinov,R. Schönemann,D. Vignolles,C. Proust,I. R. Mukhamedshin,L. Balicas,H. Alloul###
(680271, 680271)
We present transport experiments in Na2/3CoO2 in which the Na orderdifferentiates a Co kagome sub-lattice in the triangular CoO2 layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Interplay between strong correlations and electronic topology in the underlying kagome lattice of Na2/3CoO2|I. F. Gilmutdinov,R. Schönemann,D. Vignolles,C. Proust,I. R. Mukhamedshin,L. Balicas,H. Alloul###
(680280, 680280)
We present transport experiments in Na2/3CoO2 in which the Na orderdifferentiates a Co kagome sub-lattice in the triangular CoO2 layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoO2
###Interplay between strong correlations and electronic topology in the underlying kagome lattice of Na2/3CoO2|I. F. Gilmutdinov,R. Schönemann,D. Vignolles,C. Proust,I. R. Mukhamedshin,L. Balicas,H. Alloul###
(680294, 680296)
We present transport experiments in Na2/3CoO2 in which the Na orderdifferentiates a Co kagome sub-lattice in the triangular CoO2 layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Interplay between strong correlations and electronic topology in the underlying kagome lattice of Na2/3CoO2|I. F. Gilmutdinov,R. Schönemann,D. Vignolles,C. Proust,I. R. Mukhamedshin,L. Balicas,H. Alloul###
(680343, 680343)
 At low temperatures, the dominant light carrierconductivity at zero field is suppressed by a B-linear MR suggesting Dirac likequasiparticles.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Interplay between strong correlations and electronic topology in the underlying kagome lattice of Na2/3CoO2|I. F. Gilmutdinov,R. Schönemann,D. Vignolles,C. Proust,I. R. Mukhamedshin,L. Balicas,H. Alloul###
(680375, 680375)
 At low temperatures, the dominant light carrierconductivity at zero field is suppressed by a B-linear MR suggesting Dirac likequasiparticles.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Interplay between strong correlations and electronic topology in the underlying kagome lattice of Na2/3CoO2|I. F. Gilmutdinov,R. Schönemann,D. Vignolles,C. Proust,I. R. Mukhamedshin,L. Balicas,H. Alloul###
(680402, 680402)
 Lifshitz transitions induced at large B and T<missing VAR> unveil the lowermobility carriers.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B2
###Interplay between strong correlations and electronic topology in the underlying kagome lattice of Na2/3CoO2|I. F. Gilmutdinov,R. Schönemann,D. Vignolles,C. Proust,I. R. Mukhamedshin,L. Balicas,H. Alloul###
(680428, 680429)
 They display a negative B2 MR due to scattering frommagnetic moments likely pertaining to a flat band.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Experimental Confirmation of Massive Dirac Fermions in Weak Charge-Ordering State in α-(BEDT-TTF)_2I_3|Kenta Yoshimura,Mitsuyuki Sato,Toshihito Osada###
(680512, 680512)
Experimental Confirmation of Massive Dirac Fermions in Weak Charge-Ordering State in -(BEDT-TTF)2I3.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Experimental Confirmation of Massive Dirac Fermions in Weak Charge-Ordering State in α-(BEDT-TTF)_2I_3|Kenta Yoshimura,Mitsuyuki Sato,Toshihito Osada###
(680519, 680519)
Experimental Confirmation of Massive Dirac Fermions in Weak Charge-Ordering State in -(BEDT-TTF)2I3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I3
###Experimental Confirmation of Massive Dirac Fermions in Weak Charge-Ordering State in α-(BEDT-TTF)_2I_3|Kenta Yoshimura,Mitsuyuki Sato,Toshihito Osada###
(680522, 680523)
Experimental Confirmation of Massive Dirac Fermions in Weak Charge-Ordering State in -(BEDT-TTF)2I3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(CO)
###Experimental Confirmation of Massive Dirac Fermions in Weak Charge-Ordering State in α-(BEDT-TTF)_2I_3|Kenta Yoshimura,Mitsuyuki Sato,Toshihito Osada###
(680540, 680543)
 The electronic structure of weak charge-ordering (CO) state just below thecritical pressure in an organic conductor alpha-(BEDT-TTF)2I3 wasexperimentally investigated using peak structure in the temperature dependenceof interlayer magnetoresistance (MR).
Featurization successful!
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Experimental Confirmation of Massive Dirac Fermions in Weak Charge-Ordering State in α-(BEDT-TTF)_2I_3|Kenta Yoshimura,Mitsuyuki Sato,Toshihito Osada###
(680569, 680569)
 The electronic structure of weak charge-ordering (CO) state just below thecritical pressure in an organic conductor alpha-(BEDT-TTF)2I3 wasexperimentally investigated using peak structure in the temperature dependenceof interlayer magnetoresistance (MR).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Experimental Confirmation of Massive Dirac Fermions in Weak Charge-Ordering State in α-(BEDT-TTF)_2I_3|Kenta Yoshimura,Mitsuyuki Sato,Toshihito Osada###
(680576, 680576)
 The electronic structure of weak charge-ordering (CO) state just below thecritical pressure in an organic conductor alpha-(BEDT-TTF)2I3 wasexperimentally investigated using peak structure in the temperature dependenceof interlayer magnetoresistance (MR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I3
###Experimental Confirmation of Massive Dirac Fermions in Weak Charge-Ordering State in α-(BEDT-TTF)_2I_3|Kenta Yoshimura,Mitsuyuki Sato,Toshihito Osada###
(680579, 680580)
 The electronic structure of weak charge-ordering (CO) state just below thecritical pressure in an organic conductor alpha-(BEDT-TTF)2I3 wasexperimentally investigated using peak structure in the temperature dependenceof interlayer magnetoresistance (MR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Experimental Confirmation of Massive Dirac Fermions in Weak Charge-Ordering State in α-(BEDT-TTF)_2I_3|Kenta Yoshimura,Mitsuyuki Sato,Toshihito Osada###
(680673, 680673)
 Based on a minimal model consideringmultiple Landau levels (L<missing VAR>Ls), we discuss herein the MR peak as characteristicto multilayer massless/massive Dirac fermion (D<missing VAR>F) systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CO
###Experimental Confirmation of Massive Dirac Fermions in Weak Charge-Ordering State in α-(BEDT-TTF)_2I_3|Kenta Yoshimura,Mitsuyuki Sato,Toshihito Osada###
(680691, 680692)
 MR measured in theweak CO state exhibited a clear MR peak, and its magnetic-field dependence wasconsistent with the LL behavior of a massive D<missing VAR>F with a small gap.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Experimental Confirmation of Massive Dirac Fermions in Weak Charge-Ordering State in α-(BEDT-TTF)_2I_3|Kenta Yoshimura,Mitsuyuki Sato,Toshihito Osada###
(680739, 680739)
 MR measured in theweak CO state exhibited a clear MR peak, and its magnetic-field dependence wasconsistent with the LL behavior of a massive D<missing VAR>F with a small gap.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CO
###Experimental Confirmation of Massive Dirac Fermions in Weak Charge-Ordering State in α-(BEDT-TTF)_2I_3|Kenta Yoshimura,Mitsuyuki Sato,Toshihito Osada###
(680761, 680762)
 Resultsindicate that the weak CO state in alpha-(BEDT-TTF)2I3 is a massive D<missing VAR>Fstate.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Experimental Confirmation of Massive Dirac Fermions in Weak Charge-Ordering State in α-(BEDT-TTF)_2I_3|Kenta Yoshimura,Mitsuyuki Sato,Toshihito Osada###
(680771, 680771)
 Resultsindicate that the weak CO state in alpha-(BEDT-TTF)2I3 is a massive D<missing VAR>Fstate.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Experimental Confirmation of Massive Dirac Fermions in Weak Charge-Ordering State in α-(BEDT-TTF)_2I_3|Kenta Yoshimura,Mitsuyuki Sato,Toshihito Osada###
(680778, 680778)
 Resultsindicate that the weak CO state in alpha-(BEDT-TTF)2I3 is a massive D<missing VAR>Fstate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I3
###Experimental Confirmation of Massive Dirac Fermions in Weak Charge-Ordering State in α-(BEDT-TTF)_2I_3|Kenta Yoshimura,Mitsuyuki Sato,Toshihito Osada###
(680781, 680782)
 Resultsindicate that the weak CO state in alpha-(BEDT-TTF)2I3 is a massive D<missing VAR>Fstate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Experimental Confirmation of Massive Dirac Fermions in Weak Charge-Ordering State in α-(BEDT-TTF)_2I_3|Kenta Yoshimura,Mitsuyuki Sato,Toshihito Osada###
(680791, 680791)
 Resultsindicate that the weak CO state in alpha-(BEDT-TTF)2I3 is a massive D<missing VAR>Fstate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFeB/MgO/CoFeB
###Voltage-controlled antiferromagnetism in magnetic tunnel junctions|Meng Xu,Mingen Li,Pravin Khanal,Ali Habiboglu,Blake Insana,Yuzan Xiong,Thomas Peterson,Jason C. Myers,Deborah Ortega,Hongwei Qu,C. L. Chien,Wei Zhang,Jian-Ping Wang,W. G. Wang###
(680838, 680847)
 We demonstrate a voltage-controlled exchange bias effect in CoFeB/MgO/CoFeBmagnetic tunnel junctions that is related to the interfacial Fe(Co)Ox formedbetween the CoFeB electrodes and the MgO barrier.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Fe(Co)
###Voltage-controlled antiferromagnetism in magnetic tunnel junctions|Meng Xu,Mingen Li,Pravin Khanal,Ali Habiboglu,Blake Insana,Yuzan Xiong,Thomas Peterson,Jason C. Myers,Deborah Ortega,Hongwei Qu,C. L. Chien,Wei Zhang,Jian-Ping Wang,W. G. Wang###
(680868, 680871)
 We demonstrate a voltage-controlled exchange bias effect in CoFeB/MgO/CoFeBmagnetic tunnel junctions that is related to the interfacial Fe(Co)Ox formedbetween the CoFeB electrodes and the MgO barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFeB
###Voltage-controlled antiferromagnetism in magnetic tunnel junctions|Meng Xu,Mingen Li,Pravin Khanal,Ali Habiboglu,Blake Insana,Yuzan Xiong,Thomas Peterson,Jason C. Myers,Deborah Ortega,Hongwei Qu,C. L. Chien,Wei Zhang,Jian-Ping Wang,W. G. Wang###
(680881, 680883)
 We demonstrate a voltage-controlled exchange bias effect in CoFeB/MgO/CoFeBmagnetic tunnel junctions that is related to the interfacial Fe(Co)Ox formedbetween the CoFeB electrodes and the MgO barrier.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Voltage-controlled antiferromagnetism in magnetic tunnel junctions|Meng Xu,Mingen Li,Pravin Khanal,Ali Habiboglu,Blake Insana,Yuzan Xiong,Thomas Peterson,Jason C. Myers,Deborah Ortega,Hongwei Qu,C. L. Chien,Wei Zhang,Jian-Ping Wang,W. G. Wang###
(680891, 680892)
 We demonstrate a voltage-controlled exchange bias effect in CoFeB/MgO/CoFeBmagnetic tunnel junctions that is related to the interfacial Fe(Co)Ox formedbetween the CoFeB electrodes and the MgO barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFeB
###Voltage-controlled antiferromagnetism in magnetic tunnel junctions|Meng Xu,Mingen Li,Pravin Khanal,Ali Habiboglu,Blake Insana,Yuzan Xiong,Thomas Peterson,Jason C. Myers,Deborah Ortega,Hongwei Qu,C. L. Chien,Wei Zhang,Jian-Ping Wang,W. G. Wang###
(680933, 680935)
 The unique combination ofinterfacial antiferromagnetism, giant tunneling magnetoresistance, and sharpswitching of the perpendicularly-magnetized CoFeB allows sensitive detection ofthe exchange bias.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Voltage-controlled antiferromagnetism in magnetic tunnel junctions|Meng Xu,Mingen Li,Pravin Khanal,Ali Habiboglu,Blake Insana,Yuzan Xiong,Thomas Peterson,Jason C. Myers,Deborah Ortega,Hongwei Qu,C. L. Chien,Wei Zhang,Jian-Ping Wang,W. G. Wang###
(681028, 681029)
 More importantly, theexchange bias can also be effectively manipulated by the electric field appliedto the MgO barrier due to the voltage-controlled antiferromagnetic anisotropyin this system.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeRh
###Flexible antiferromagnetic FeRh tapes as memory elements|Ignasi Fina,Nico Dix,Enric Menéndez,Anna Crespi,Michael Foerster,Lucia Aballe,Florencio Sánchez,Josep Fontcuberta###
(681067, 681068)
Flexible antiferromagnetic FeRh tapes as memory elements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 90, 'oC', 3]

FeRh
###Flexible antiferromagnetic FeRh tapes as memory elements|Ignasi Fina,Nico Dix,Enric Menéndez,Anna Crespi,Michael Foerster,Lucia Aballe,Florencio Sánchez,Josep Fontcuberta###
(681100, 681101)
 The antiferromagnetic to ferromagnetic transition occurring above roomtemperature in FeRh is attracting interest for applications in spintronics,with perspectives for robust and untraceable data storage.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 90, 'oC', 2]

FeRh
###Flexible antiferromagnetic FeRh tapes as memory elements|Ignasi Fina,Nico Dix,Enric Menéndez,Anna Crespi,Michael Foerster,Lucia Aballe,Florencio Sánchez,Josep Fontcuberta###
(681146, 681147)
 Here, we show thatFeRh films can be grown on a flexible metallic substrate (tape shaped), coatedwith a textured rock-salt MgO layer, suitable for large scale applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 90, 'oC', 1]

MgO
###Flexible antiferromagnetic FeRh tapes as memory elements|Ignasi Fina,Nico Dix,Enric Menéndez,Anna Crespi,Michael Foerster,Lucia Aballe,Florencio Sánchez,Josep Fontcuberta###
(681187, 681188)
 Here, we show thatFeRh films can be grown on a flexible metallic substrate (tape shaped), coatedwith a textured rock-salt MgO layer, suitable for large scale applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 90, 'oC', 1]

FeRh
###Flexible antiferromagnetic FeRh tapes as memory elements|Ignasi Fina,Nico Dix,Enric Menéndez,Anna Crespi,Michael Foerster,Lucia Aballe,Florencio Sánchez,Josep Fontcuberta###
(681207, 681208)
 TheFeRh tape displays a sharp antiferromagnetic to ferromagnetic transition atabout 90 oC.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 90, 'oC', 0]

(PSB)
###Pauli spin blockade with site-dependent g-tensors and spin-polarized leads|Philipp M. Mutter,Guido Burkard###
(681334, 681338)
 Pauli spin blockade (PSB) in double quantum dots (DQDs) has matured into aprime technique for precise measurements of nanoscale system parameters.
Featurization successful!
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ds
###Pauli spin blockade with site-dependent g-tensors and spin-polarized leads|Philipp M. Mutter,Guido Burkard###
(681351, 681351)
 Pauli spin blockade (PSB) in double quantum dots (DQDs) has matured into aprime technique for precise measurements of nanoscale system parameters.
EXCEPTION 3: IndexError for Ds
In
Abstract does not contain any numbers.

S
###Surface Acoustic Wave induced modulation of tunneling magnetoresistance in magnetic tunnel junctions|Dhritiman Bhattacharya,Peng Sheng,Md Ahsanul Abeed,Zhengyang Zhao,Hongshi Li,Jian-Ping Wang,Supriyo Bandyopadhyay,Bin Ma,Jayasimha Atulasimha###
(681636, 681636)
 We show that a surface acoustic wave (SAW) applied across the terminals of amagnetic tunnel junction (MTJ) decreases both the (time-averaged) parallel andantiparallel resistances of the MTJ, with the latter decreasing much more thanthe former.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Surface Acoustic Wave induced modulation of tunneling magnetoresistance in magnetic tunnel junctions|Dhritiman Bhattacharya,Peng Sheng,Md Ahsanul Abeed,Zhengyang Zhao,Hongshi Li,Jian-Ping Wang,Supriyo Bandyopadhyay,Bin Ma,Jayasimha Atulasimha###
(681638, 681638)
 We show that a surface acoustic wave (SAW) applied across the terminals of amagnetic tunnel junction (MTJ) decreases both the (time-averaged) parallel andantiparallel resistances of the MTJ, with the latter decreasing much more thanthe former.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Surface Acoustic Wave induced modulation of tunneling magnetoresistance in magnetic tunnel junctions|Dhritiman Bhattacharya,Peng Sheng,Md Ahsanul Abeed,Zhengyang Zhao,Hongshi Li,Jian-Ping Wang,Supriyo Bandyopadhyay,Bin Ma,Jayasimha Atulasimha###
(681788, 681788)
 The coercivities of the free and fixed layer of the MTJ, however, arenot affected significantly, suggesting that the SAW does not cause large-anglemagnetization rotation in the magnetic layers through the inversemagnetostriction (Villari) effect at the power levels used.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Surface Acoustic Wave induced modulation of tunneling magnetoresistance in magnetic tunnel junctions|Dhritiman Bhattacharya,Peng Sheng,Md Ahsanul Abeed,Zhengyang Zhao,Hongshi Li,Jian-Ping Wang,Supriyo Bandyopadhyay,Bin Ma,Jayasimha Atulasimha###
(681790, 681790)
 The coercivities of the free and fixed layer of the MTJ, however, arenot affected significantly, suggesting that the SAW does not cause large-anglemagnetization rotation in the magnetic layers through the inversemagnetostriction (Villari) effect at the power levels used.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CsSnBr3
###Coherent Hopping Transport and Giant Negative Magnetoresistance in Epitaxial CsSnBr$_{3}$|Liangji Zhang,Isaac King,Kostyantyn Nasyedkin,Pei Chen,Brian Skinner,Richard R. Lunt,Johannes Pollanen###
(681906, 681909)
Coherent Hopping Transport and Giant Negative Magnetoresistance in Epitaxial CsSnBr3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CsSnBr3
###Coherent Hopping Transport and Giant Negative Magnetoresistance in Epitaxial CsSnBr$_{3}$|Liangji Zhang,Isaac King,Kostyantyn Nasyedkin,Pei Chen,Brian Skinner,Richard R. Lunt,Johannes Pollanen###
(681972, 681975)
 Here we present low-temperature quantummagnetotransport measurements on thin film devices of epitaxial single-crystalCsSnBr3, which exhibit two-dimensional Mott variable range hopping (VR<missing VAR>H)and giant negative magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Coherent Hopping Transport and Giant Negative Magnetoresistance in Epitaxial CsSnBr$_{3}$|Liangji Zhang,Isaac King,Kostyantyn Nasyedkin,Pei Chen,Brian Skinner,Richard R. Lunt,Johannes Pollanen###
(681995, 681995)
 Here we present low-temperature quantummagnetotransport measurements on thin film devices of epitaxial single-crystalCsSnBr3, which exhibit two-dimensional Mott variable range hopping (VR<missing VAR>H)and giant negative magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Coherent Hopping Transport and Giant Negative Magnetoresistance in Epitaxial CsSnBr$_{3}$|Liangji Zhang,Isaac King,Kostyantyn Nasyedkin,Pei Chen,Brian Skinner,Richard R. Lunt,Johannes Pollanen###
(681997, 681997)
 Here we present low-temperature quantummagnetotransport measurements on thin film devices of epitaxial single-crystalCsSnBr3, which exhibit two-dimensional Mott variable range hopping (VR<missing VAR>H)and giant negative magnetoresistance.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(WTe2)
###Thickness Dependence of Magneto-transport Properties in Tungsten Ditelluride|Xurui Zhang,Vivek Kakani,John M. Woods,Judy J. Cha,Xiaoyan Shi###
(682193, 682197)
 We investigate the electronic structure of tungsten ditelluride (WTe2)flakes with different thicknesses in magneto-transport studies.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 3, 'D', 3]

WTe2
###Thickness Dependence of Magneto-transport Properties in Tungsten Ditelluride|Xurui Zhang,Vivek Kakani,John M. Woods,Judy J. Cha,Xiaoyan Shi###
(682318, 682320)
 The Shubnikov-de-Haasoscillation studies further confirm the thickness-dependent change ofelectronic structure of WTe2 and reveal a possible temperature-sensitiveelectronic structure change.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 3, 'D', 1]

WTe2
###Thickness Dependence of Magneto-transport Properties in Tungsten Ditelluride|Xurui Zhang,Vivek Kakani,John M. Woods,Judy J. Cha,Xiaoyan Shi###
(682375, 682377)
 Finally, we report the thickness-dependentanisotropy of Fermi surface, which reveals that multi-layer WTe2 is anelectronic 3D material and the anisotropy decreases as thickness decreases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 3, 'D', 0]

(Nd0.8Sr0.2)4Ni3O10
###Coherent epitaxy of trilayer nickelate (Nd0.8Sr0.2)4Ni3O10 films by high-pressure magnetron sputtering|Jiachang Bi,Yujuan Pei,Ruyi Zhang,Shaoqin Peng,Xinming Wang,Jie Sun,Jiagui Feng,Jingkai Yang,Yanwei Cao###
(682422, 682432)
Coherent epitaxy of trilayer nickelate (Nd0.8Sr0.2)4Ni3O10 films by high-pressure magnetron sputtering.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5882352941176471,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.17647058823529413,0,0,0,0,0,0,0,0,0,0.047058823529411764,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18823529411764706,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[255.0, 82, 'K', 5]

NiO3
###Coherent epitaxy of trilayer nickelate (Nd0.8Sr0.2)4Ni3O10 films by high-pressure magnetron sputtering|Jiachang Bi,Yujuan Pei,Ruyi Zhang,Shaoqin Peng,Xinming Wang,Jie Sun,Jiagui Feng,Jingkai Yang,Yanwei Cao###
(682465, 682467)
 Rare-earth (R) nickelates (such as perovskite R<missing VAR>NiO3, trilayer R<missing VAR>4Ni3O10, andinfinite layer R<missing VAR>NiO2) have attracted tremendous interest very recently.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[220.0, 82, 'K', 4]

Ni3O10
###Coherent epitaxy of trilayer nickelate (Nd0.8Sr0.2)4Ni3O10 films by high-pressure magnetron sputtering|Jiachang Bi,Yujuan Pei,Ruyi Zhang,Shaoqin Peng,Xinming Wang,Jie Sun,Jiagui Feng,Jingkai Yang,Yanwei Cao###
(682474, 682477)
 Rare-earth (R) nickelates (such as perovskite R<missing VAR>NiO3, trilayer R<missing VAR>4Ni3O10, andinfinite layer R<missing VAR>NiO2) have attracted tremendous interest very recently.
Featurization terminated normally.
0,0,0,0,0,0,0,0.7692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23076923076923078,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[210.0, 82, 'K', 4]

O2
###Coherent epitaxy of trilayer nickelate (Nd0.8Sr0.2)4Ni3O10 films by high-pressure magnetron sputtering|Jiachang Bi,Yujuan Pei,Ruyi Zhang,Shaoqin Peng,Xinming Wang,Jie Sun,Jiagui Feng,Jingkai Yang,Yanwei Cao###
(682489, 682490)
 Rare-earth (R) nickelates (such as perovskite R<missing VAR>NiO3, trilayer R<missing VAR>4Ni3O10, andinfinite layer R<missing VAR>NiO2) have attracted tremendous interest very recently.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[197.0, 82, 'K', 4]

NiO3
###Coherent epitaxy of trilayer nickelate (Nd0.8Sr0.2)4Ni3O10 films by high-pressure magnetron sputtering|Jiachang Bi,Yujuan Pei,Ruyi Zhang,Shaoqin Peng,Xinming Wang,Jie Sun,Jiagui Feng,Jingkai Yang,Yanwei Cao###
(682517, 682519)
However, unlike widely studied R<missing VAR>NiO3 and R<missing VAR>NiO2 films, the synthesis of trilayernickelate R<missing VAR>4Ni3O10 films is rarely reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[168.0, 82, 'K', 3]

NiO2
###Coherent epitaxy of trilayer nickelate (Nd0.8Sr0.2)4Ni3O10 films by high-pressure magnetron sputtering|Jiachang Bi,Yujuan Pei,Ruyi Zhang,Shaoqin Peng,Xinming Wang,Jie Sun,Jiagui Feng,Jingkai Yang,Yanwei Cao###
(682524, 682526)
However, unlike widely studied R<missing VAR>NiO3 and R<missing VAR>NiO2 films, the synthesis of trilayernickelate R<missing VAR>4Ni3O10 films is rarely reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 82, 'K', 3]

Ni3O10
###Coherent epitaxy of trilayer nickelate (Nd0.8Sr0.2)4Ni3O10 films by high-pressure magnetron sputtering|Jiachang Bi,Yujuan Pei,Ruyi Zhang,Shaoqin Peng,Xinming Wang,Jie Sun,Jiagui Feng,Jingkai Yang,Yanwei Cao###
(682544, 682547)
However, unlike widely studied R<missing VAR>NiO3 and R<missing VAR>NiO2 films, the synthesis of trilayernickelate R<missing VAR>4Ni3O10 films is rarely reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0.7692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23076923076923078,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 82, 'K', 3]

(Nd0.8Sr0.2)4Ni3O10
###Coherent epitaxy of trilayer nickelate (Nd0.8Sr0.2)4Ni3O10 films by high-pressure magnetron sputtering|Jiachang Bi,Yujuan Pei,Ruyi Zhang,Shaoqin Peng,Xinming Wang,Jie Sun,Jiagui Feng,Jingkai Yang,Yanwei Cao###
(682566, 682576)
 Here, single-crystalline(Nd0.8Sr0.2)4Ni3O10 epitaxial films were coherently grown on SrTiO3 substratesby high-pressure magnetron sputtering.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5882352941176471,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.17647058823529413,0,0,0,0,0,0,0,0,0,0.047058823529411764,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18823529411764706,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 82, 'K', 2]

SrTiO3
###Coherent epitaxy of trilayer nickelate (Nd0.8Sr0.2)4Ni3O10 films by high-pressure magnetron sputtering|Jiachang Bi,Yujuan Pei,Ruyi Zhang,Shaoqin Peng,Xinming Wang,Jie Sun,Jiagui Feng,Jingkai Yang,Yanwei Cao###
(682590, 682593)
 Here, single-crystalline(Nd0.8Sr0.2)4Ni3O10 epitaxial films were coherently grown on SrTiO3 substratesby high-pressure magnetron sputtering.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 82, 'K', 2]

(Nd0.8Sr0.2)4Ni3O10
###Coherent epitaxy of trilayer nickelate (Nd0.8Sr0.2)4Ni3O10 films by high-pressure magnetron sputtering|Jiachang Bi,Yujuan Pei,Ruyi Zhang,Shaoqin Peng,Xinming Wang,Jie Sun,Jiagui Feng,Jingkai Yang,Yanwei Cao###
(682622, 682632)
 The crystal and electronic structures of(Nd0.8Sr0.2)4Ni3O10 films were characterized by high-resolution X<missing VAR>-raydiffraction and X<missing VAR>-ray photoemission spectroscopy, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5882352941176471,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.17647058823529413,0,0,0,0,0,0,0,0,0,0.047058823529411764,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18823529411764706,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 82, 'K', 1]

(Nd0.8Sr0.2)4Ni3O10
###Coherent epitaxy of trilayer nickelate (Nd0.8Sr0.2)4Ni3O10 films by high-pressure magnetron sputtering|Jiachang Bi,Yujuan Pei,Ruyi Zhang,Shaoqin Peng,Xinming Wang,Jie Sun,Jiagui Feng,Jingkai Yang,Yanwei Cao###
(682698, 682708)
 The electricaltransport measurements reveal a metal-insulator transition near 82 K andnegative magnetoresistance in (Nd0.8Sr0.2)4Ni3O10 films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5882352941176471,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.17647058823529413,0,0,0,0,0,0,0,0,0,0.047058823529411764,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18823529411764706,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 82, 'K', 0]

Ni3O10
###Coherent epitaxy of trilayer nickelate (Nd0.8Sr0.2)4Ni3O10 films by high-pressure magnetron sputtering|Jiachang Bi,Yujuan Pei,Ruyi Zhang,Shaoqin Peng,Xinming Wang,Jie Sun,Jiagui Feng,Jingkai Yang,Yanwei Cao###
(682740, 682743)
 Our work provides anovel route to synthesize high-quality trilayer nickelate R<missing VAR>4Ni3O10 films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.7692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23076923076923078,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 82, 'K', 1]

CoTb
###Antisymmetric magnetoresistance due to domain wall tilting in perpendicular magnetized films|Yangtao Su,Yang Meng,Haibin Shi,Li Wang,Xinyu Cao,Ying Zhang,Runwei Li,Hongwu Zhao###
(682807, 682808)
 We report the observation of the antisymmetric magnetoresistance (MR) inperpendicular magnetized CoTb films with inhomogeneous magnetizationdistribution driven by gradient magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Robust spin-transfer torque and magnetoresistance in non-collinear antiferromagnetic junctions|Srikrishna Ghosh,Aurelien Manchon,Jakub Železný###
(683195, 683195)
 In addition, we show that the non-collinear order results in aspin-transfer torque that is in several key aspects different from thespin-transfer torque in ferromagnetic junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Anomalous chiral magnetic effect in time reversal symmetry breaking Weyl semimetals|Long Liang###
(683336, 683336)
 We propose a mechanism to generate dissipationless current in time reversalsymmetry breaking Weyl semimetals through the anomalous chiral magnetic effect(ACME).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Anomalous chiral magnetic effect in time reversal symmetry breaking Weyl semimetals|Long Liang###
(683345, 683345)
 The ACME current is induced by chiral imbalance and flows along thedirection of the Weyl nodes separation in momentum space.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Anomalous chiral magnetic effect in time reversal symmetry breaking Weyl semimetals|Long Liang###
(683389, 683389)
 In contrast to thechiral magnetic effect, the ACME is not related to the chiral anomaly and doesnot require external magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Anomalous chiral magnetic effect in time reversal symmetry breaking Weyl semimetals|Long Liang###
(683408, 683408)
 In contrast to thechiral magnetic effect, the ACME is not related to the chiral anomaly and doesnot require external magnetic field.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Anomalous chiral magnetic effect in time reversal symmetry breaking Weyl semimetals|Long Liang###
(683442, 683442)
 In the presence of parallel electric andmagnetic fields, the ACME gives rise to an antisymmetric linearmagnetoresistance and a planar Hall conductivity, which we estimate to beobservable.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Anomalous chiral magnetic effect in time reversal symmetry breaking Weyl semimetals|Long Liang###
(683465, 683465)
 In the presence of parallel electric andmagnetic fields, the ACME gives rise to an antisymmetric linearmagnetoresistance and a planar Hall conductivity, which we estimate to beobservable.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Berry curvature induced nonlinear magnetoresistivity in two dimensional systems|Shibalik Lahiri,Tanmay Bhore,Kamal Das,Amit Agarwal###
(683576, 683576)
 In this paper, we propose thatthe interplay of the Berry curvature, the orbital magnetic moment and theLorentz force can induce a finite nonlinear resistivity in two dimensionalsystems in presence of a perpendicular magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PdCoO2
###Nonreciprocal transport in a Rashba ferromagnet, delafossite PdCoO$_2$|Jin Hong Lee,Takayuki Harada,Felix Trier,Lourdes Marcano,Florian Godel,Sergio Valencia,Atsushi Tsukazaki,Manuel Bibes###
(683763, 683766)
Nonreciprocal transport in a Rashba ferromagnet, delafossite PdCoO2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 0.3, 'eV', 4]

PdCoO2
###Nonreciprocal transport in a Rashba ferromagnet, delafossite PdCoO$_2$|Jin Hong Lee,Takayuki Harada,Felix Trier,Lourdes Marcano,Florian Godel,Sergio Valencia,Atsushi Tsukazaki,Manuel Bibes###
(683823, 683826)
 Here, we report magnetotransportexperiments in few-nanometer-thick films of PdCoO2, a delafossite oxideknown to display a large Rashba splitting and surface ferromagnetism.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 0.3, 'eV', 2]

PH
###Negative magnetoresistance and sign change of the planar Hall effect due to the negative off-diagonal effective-mass in Weyl semimetals|Akiyoshi Yamada,Yuki Fuseya###
(684566, 684567)
 We theoretically investigated the magnetoresistance (MR) and planar Halleffect (PHE) in Weyl semimetals based on the semiclassical Boltzmann theory,focusing on the fine structure of the band dispersion.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PH
###Negative magnetoresistance and sign change of the planar Hall effect due to the negative off-diagonal effective-mass in Weyl semimetals|Akiyoshi Yamada,Yuki Fuseya###
(684636, 684637)
 We identified that thenegative longitudinal MR and sign change in the PHE<missing VAR> occur because of thenegative off-diagonal effective-mass with no topological effects or chiralanomaly physics.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PH
###Negative magnetoresistance and sign change of the planar Hall effect due to the negative off-diagonal effective-mass in Weyl semimetals|Akiyoshi Yamada,Yuki Fuseya###
(684725, 684726)
 We proposethat the PHE<missing VAR> creates a dip in their temperature dependence, which enables theexperimental detection of the Weyl point.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

U
###Impact of Kondo correlations and spin-orbit coupling on spin-polarized transport in carbon nanotube quantum dot|D. Krychowski,S. Lipiński###
(684861, 684861)
 Spin polarized transport through a quantum dot coupled to ferromagneticelectrodes with noncollinear magnetizations is discussed in terms ofnonequilibrium Green functions formalism in the finite-U slave boson mean fieldapproximation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Impact of Kondo correlations and spin-orbit coupling on spin-polarized transport in carbon nanotube quantum dot|D. Krychowski,S. Lipiński###
(685015, 685015)
 In general spin-orbit coupling weakens TMR, but it can change itssign.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Dynamic spin polarization in organic semiconductors with intermolecular exchange interaction|A. V. Shumilin###
(685097, 685097)
 It is shown that in organic semiconductors where organic magnetoresistance(OMAR) is observed, the exchange interaction between electrons and holeslocalized at different molecules leads to dynamic spin polarization in thedirection of the applied magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Dynamic spin polarization in organic semiconductors with intermolecular exchange interaction|A. V. Shumilin###
(685274, 685274)
 The exchange interaction also modifies thelineshape of OMAR.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Synchronous Unsupervised STDP Learning with Stochastic STT-MRAM Switching|Peng Zhou,Julie A. Smith,Laura Deremo,Stephen K. Heinrich-Barna,Joseph S. Friedman###
(685292, 685292)
Synchronous Unsupervised STDP Learning with Stochastic STT-MRAM<missing VAR> Switching.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[264.0, 90, '%', 5]

P
###Synchronous Unsupervised STDP Learning with Stochastic STT-MRAM Switching|Peng Zhou,Julie A. Smith,Laura Deremo,Stephen K. Heinrich-Barna,Joseph S. Friedman###
(685295, 685295)
Synchronous Unsupervised STDP Learning with Stochastic STT-MRAM<missing VAR> Switching.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[261.0, 90, '%', 5]

S
###Synchronous Unsupervised STDP Learning with Stochastic STT-MRAM Switching|Peng Zhou,Julie A. Smith,Laura Deremo,Stephen K. Heinrich-Barna,Joseph S. Friedman###
(685303, 685303)
Synchronous Unsupervised STDP Learning with Stochastic STT-MRAM<missing VAR> Switching.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[253.0, 90, '%', 5]

S
###Synchronous Unsupervised STDP Learning with Stochastic STT-MRAM Switching|Peng Zhou,Julie A. Smith,Laura Deremo,Stephen K. Heinrich-Barna,Joseph S. Friedman###
(685425, 685425)
 This challenge can be resolved byemulating analog behavior with the stochastic switching of the binary states ofspin-transfer torque magnetoresistive random-access memory (STT-MRAM).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 90, '%', 3]

S
###Synchronous Unsupervised STDP Learning with Stochastic STT-MRAM Switching|Peng Zhou,Julie A. Smith,Laura Deremo,Stephen K. Heinrich-Barna,Joseph S. Friedman###
(685448, 685448)
 However,previous approaches based on STT-MRAM<missing VAR> operate in an asynchronous manner that isdifficult to implement experimentally.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 90, '%', 2]

S
###Synchronous Unsupervised STDP Learning with Stochastic STT-MRAM Switching|Peng Zhou,Julie A. Smith,Laura Deremo,Stephen K. Heinrich-Barna,Joseph S. Friedman###
(685525, 685525)
 This paper proposes a synchronousspiking neural network system with clocked circuits that perform unsupervisedlearning leveraging the stochastic switching of STT-MRAM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 90, '%', 1]

NIS
###Synchronous Unsupervised STDP Learning with Stochastic STT-MRAM Switching|Peng Zhou,Julie A. Smith,Laura Deremo,Stephen K. Heinrich-Barna,Joseph S. Friedman###
(685568, 685570)
 The proposed systemenables a single-layer network to achieve 90% inference accuracy on the M<missing VAR>NIST<missing VAR>dataset.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 90, '%', 0]

Tm3Fe5O12/W
###Origins of transverse voltages generated by applied thermal gradients and applied electric fields in ferrimagnetic-insulator/heavy-metal bilayers|Arnab Bose,Rakshit Jain,Jackson J. Bauer,Robert A. Buhrman,Caroline A. Ross,Daniel C. Ralph###
(685652, 685659)
 We compare thermal-gradient-driven transverse voltages inferrimagnetic-insulator/heavy-metal bilayers (Tm3Fe5O12/W and Tm3Fe5O12/Pt) tocorresponding electrically-driven transverse resistances at and above roomtemperature.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Pt
###Origins of transverse voltages generated by applied thermal gradients and applied electric fields in ferrimagnetic-insulator/heavy-metal bilayers|Arnab Bose,Rakshit Jain,Jackson J. Bauer,Robert A. Buhrman,Caroline A. Ross,Daniel C. Ralph###
(685670, 685670)
 We compare thermal-gradient-driven transverse voltages inferrimagnetic-insulator/heavy-metal bilayers (Tm3Fe5O12/W and Tm3Fe5O12/Pt) tocorresponding electrically-driven transverse resistances at and above roomtemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tm3Fe5O12/W
###Origins of transverse voltages generated by applied thermal gradients and applied electric fields in ferrimagnetic-insulator/heavy-metal bilayers|Arnab Bose,Rakshit Jain,Jackson J. Bauer,Robert A. Buhrman,Caroline A. Ross,Daniel C. Ralph###
(685704, 685711)
 We find for Tm3Fe5O12/W that the thermal and electrical effectscan be explained by a common spin-current detection mechanism, the physicsunderlying spin Hall magnetoresistance (SMR).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

S
###Origins of transverse voltages generated by applied thermal gradients and applied electric fields in ferrimagnetic-insulator/heavy-metal bilayers|Arnab Bose,Rakshit Jain,Jackson J. Bauer,Robert A. Buhrman,Caroline A. Ross,Daniel C. Ralph###
(685761, 685761)
 We find for Tm3Fe5O12/W that the thermal and electrical effectscan be explained by a common spin-current detection mechanism, the physicsunderlying spin Hall magnetoresistance (SMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tm3Fe5O12/Pt
###Origins of transverse voltages generated by applied thermal gradients and applied electric fields in ferrimagnetic-insulator/heavy-metal bilayers|Arnab Bose,Rakshit Jain,Jackson J. Bauer,Robert A. Buhrman,Caroline A. Ross,Daniel C. Ralph###
(685772, 685779)
 However, for Tm3Fe5O12/Pt theratio of the electrically-driven transverse voltages (planar Hallsignal/anomalous Hall signal) is much larger than the ratio of correspondingthermal-gradient signals, a result which is very different from expectationsfor a SMR-based mechanism alone.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

S
###Origins of transverse voltages generated by applied thermal gradients and applied electric fields in ferrimagnetic-insulator/heavy-metal bilayers|Arnab Bose,Rakshit Jain,Jackson J. Bauer,Robert A. Buhrman,Caroline A. Ross,Daniel C. Ralph###
(685858, 685858)
 However, for Tm3Fe5O12/Pt theratio of the electrically-driven transverse voltages (planar Hallsignal/anomalous Hall signal) is much larger than the ratio of correspondingthermal-gradient signals, a result which is very different from expectationsfor a SMR-based mechanism alone.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tm3Fe5O12/Pt
###Origins of transverse voltages generated by applied thermal gradients and applied electric fields in ferrimagnetic-insulator/heavy-metal bilayers|Arnab Bose,Rakshit Jain,Jackson J. Bauer,Robert A. Buhrman,Caroline A. Ross,Daniel C. Ralph###
(685894, 685901)
 We ascribe this difference to aproximity-induced magnetic layer at the Tm3Fe5O12/Pt interface.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

H
###Theory of spin-polarized current flow through a localized spin triplet state|Stephen R. McMillan,Michael E. Flatté###
(686080, 686080)
 For example, in4H-SiC the single (hh), (kk), (hk), and (kh) divacancies are alldistinct.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SiC
###Theory of spin-polarized current flow through a localized spin triplet state|Stephen R. McMillan,Michael E. Flatté###
(686082, 686083)
 For example, in4H-SiC the single (hh), (kk), (hk), and (kh) divacancies are alldistinct.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SS
###Modulation of Spin Seebeck Effect by Hydrogenation|K. Ogata,T. Kikkawa,E. Saitoh,Y. Shiomi###
(686193, 686194)
 We demonstrate the modulation of spin Seebeck effect (SSE) by hydrogenationin Pd/YIG<missing VAR> bilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 3, '%', 1],[51.0, 50, '%', 1]

Pd/YI
###Modulation of Spin Seebeck Effect by Hydrogenation|K. Ogata,T. Kikkawa,E. Saitoh,Y. Shiomi###
(686205, 686208)
 We demonstrate the modulation of spin Seebeck effect (SSE) by hydrogenationin Pd/YIG<missing VAR> bilayers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[14.0, 3, '%', 1],[37.0, 50, '%', 1]

In
###Modulation of Spin Seebeck Effect by Hydrogenation|K. Ogata,T. Kikkawa,E. Saitoh,Y. Shiomi###
(686214, 686214)
 In the presence of 3% hydrogen gas, SSE<missing VAR> voltage decreasesby more than 50% from the magnitude observed in pure Ar gas.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 3, '%', 0],[31.0, 50, '%', 0]

SS
###Modulation of Spin Seebeck Effect by Hydrogenation|K. Ogata,T. Kikkawa,E. Saitoh,Y. Shiomi###
(686230, 686231)
 In the presence of 3% hydrogen gas, SSE<missing VAR> voltage decreasesby more than 50% from the magnitude observed in pure Ar gas.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 3, '%', 0],[14.0, 50, '%', 0]

Ar
###Modulation of Spin Seebeck Effect by Hydrogenation|K. Ogata,T. Kikkawa,E. Saitoh,Y. Shiomi###
(686260, 686260)
 In the presence of 3% hydrogen gas, SSE<missing VAR> voltage decreasesby more than 50% from the magnitude observed in pure Ar gas.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 3, '%', 0],[15.0, 50, '%', 0]

SS
###Modulation of Spin Seebeck Effect by Hydrogenation|K. Ogata,T. Kikkawa,E. Saitoh,Y. Shiomi###
(686274, 686275)
 The modulation ofthe SSE<missing VAR> voltage is reversible, but the recovery of the SSE<missing VAR> voltage to theprehydrogenation value takes a few days because of a long time constant ofhydrogen desorption.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 3, '%', 1],[29.0, 50, '%', 1]

SS
###Modulation of Spin Seebeck Effect by Hydrogenation|K. Ogata,T. Kikkawa,E. Saitoh,Y. Shiomi###
(686295, 686296)
 The modulation ofthe SSE<missing VAR> voltage is reversible, but the recovery of the SSE<missing VAR> voltage to theprehydrogenation value takes a few days because of a long time constant ofhydrogen desorption.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 3, '%', 1],[50.0, 50, '%', 1]

Pd/YI
###Modulation of Spin Seebeck Effect by Hydrogenation|K. Ogata,T. Kikkawa,E. Saitoh,Y. Shiomi###
(686402, 686405)
 We also demonstrate that the spin Hall magnetoresistanceof the identical sample reduces significantly with hydrogen exposure,supporting that the observed modulation of spin current signals originates fromhydrogenation of Pd/YIG<missing VAR>.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[180.0, 3, '%', 2],[157.0, 50, '%', 2]

TiSe2
###Growth, structure, micro-structure and magneto transport of an easy route synthesized bulk polycrystalline TiSe2|Abhilasha Saini,Kapil Kumar,M. M. Sharma,R. P. Aloysius,V. P. S. Awana###
(686447, 686449)
Growth, structure, micro-structure and magneto transport of an easy route synthesized bulk polycrystalline TiSe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 180, 'K', 4]

TiSe2
###Growth, structure, micro-structure and magneto transport of an easy route synthesized bulk polycrystalline TiSe2|Abhilasha Saini,Kapil Kumar,M. M. Sharma,R. P. Aloysius,V. P. S. Awana###
(686472, 686474)
 This article reports an easy route synthesis of bulk polycrystalline TiSe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 180, 'K', 3]

P
###Growth, structure, micro-structure and magneto transport of an easy route synthesized bulk polycrystalline TiSe2|Abhilasha Saini,Kapil Kumar,M. M. Sharma,R. P. Aloysius,V. P. S. Awana###
(686502, 686502)
Phase purity and microstructure are determined through powder X<missing VAR>-ray diffraction(PXRD) and field emission scanning electron microscopy (FESEM) respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 180, 'K', 2]

F
###Growth, structure, micro-structure and magneto transport of an easy route synthesized bulk polycrystalline TiSe2|Abhilasha Saini,Kapil Kumar,M. M. Sharma,R. P. Aloysius,V. P. S. Awana###
(686521, 686521)
Phase purity and microstructure are determined through powder X<missing VAR>-ray diffraction(PXRD) and field emission scanning electron microscopy (FESEM) respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 180, 'K', 2]

TiSe2
###Growth, structure, micro-structure and magneto transport of an easy route synthesized bulk polycrystalline TiSe2|Abhilasha Saini,Kapil Kumar,M. M. Sharma,R. P. Aloysius,V. P. S. Awana###
(686538, 686540)
Vibrational modes of TiSe2 as being analyzed by Raman spectroscopy, show theoccurrence of both Ag and Eg modes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 180, 'K', 1]

Ag
###Growth, structure, micro-structure and magneto transport of an easy route synthesized bulk polycrystalline TiSe2|Abhilasha Saini,Kapil Kumar,M. M. Sharma,R. P. Aloysius,V. P. S. Awana###
(686566, 686566)
Vibrational modes of TiSe2 as being analyzed by Raman spectroscopy, show theoccurrence of both Ag and Eg modes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 180, 'K', 1]

C
###Growth, structure, micro-structure and magneto transport of an easy route synthesized bulk polycrystalline TiSe2|Abhilasha Saini,Kapil Kumar,M. M. Sharma,R. P. Aloysius,V. P. S. Awana###
(686582, 686582)
 Charge density wave (CD<missing VAR>W) is observed intransport measurements of TiSe2 with hysteresis in cooling and warmingmeasurements at around 180K.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 180, 'K', 0]

W
###Growth, structure, micro-structure and magneto transport of an easy route synthesized bulk polycrystalline TiSe2|Abhilasha Saini,Kapil Kumar,M. M. Sharma,R. P. Aloysius,V. P. S. Awana###
(686584, 686584)
 Charge density wave (CD<missing VAR>W) is observed intransport measurements of TiSe2 with hysteresis in cooling and warmingmeasurements at around 180K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 180, 'K', 0]

TiSe2
###Growth, structure, micro-structure and magneto transport of an easy route synthesized bulk polycrystalline TiSe2|Abhilasha Saini,Kapil Kumar,M. M. Sharma,R. P. Aloysius,V. P. S. Awana###
(686600, 686602)
 Charge density wave (CD<missing VAR>W) is observed intransport measurements of TiSe2 with hysteresis in cooling and warmingmeasurements at around 180K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 180, 'K', 0]

TiSe2
###Growth, structure, micro-structure and magneto transport of an easy route synthesized bulk polycrystalline TiSe2|Abhilasha Saini,Kapil Kumar,M. M. Sharma,R. P. Aloysius,V. P. S. Awana###
(686630, 686632)
 Further, studied TiSe2 showed negativemagnetoresistance (MR) below the CD<missing VAR>W and a small positive MR above the CD<missing VAR>W.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 180, 'K', 1]

C
###Growth, structure, micro-structure and magneto transport of an easy route synthesized bulk polycrystalline TiSe2|Abhilasha Saini,Kapil Kumar,M. M. Sharma,R. P. Aloysius,V. P. S. Awana###
(686650, 686650)
 Further, studied TiSe2 showed negativemagnetoresistance (MR) below the CD<missing VAR>W and a small positive MR above the CD<missing VAR>W.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 180, 'K', 1]

W
###Growth, structure, micro-structure and magneto transport of an easy route synthesized bulk polycrystalline TiSe2|Abhilasha Saini,Kapil Kumar,M. M. Sharma,R. P. Aloysius,V. P. S. Awana###
(686652, 686652)
 Further, studied TiSe2 showed negativemagnetoresistance (MR) below the CD<missing VAR>W and a small positive MR above the CD<missing VAR>W.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 180, 'K', 1]

C
###Growth, structure, micro-structure and magneto transport of an easy route synthesized bulk polycrystalline TiSe2|Abhilasha Saini,Kapil Kumar,M. M. Sharma,R. P. Aloysius,V. P. S. Awana###
(686669, 686669)
 Further, studied TiSe2 showed negativemagnetoresistance (MR) below the CD<missing VAR>W and a small positive MR above the CD<missing VAR>W.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 180, 'K', 1]

W
###Growth, structure, micro-structure and magneto transport of an easy route synthesized bulk polycrystalline TiSe2|Abhilasha Saini,Kapil Kumar,M. M. Sharma,R. P. Aloysius,V. P. S. Awana###
(686671, 686671)
 Further, studied TiSe2 showed negativemagnetoresistance (MR) below the CD<missing VAR>W and a small positive MR above the CD<missing VAR>W.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 180, 'K', 1]

BN
###Dual-gated hBN/bilayer-graphene superlattices and the transitions between the insulating phases at the charge neutrality point|Takuya Iwasaki,Yoshifumi Morita,Kenji Watanabe,Takashi Taniguchi###
(686687, 686688)
Dual-gated h<missing VAR>BN/bilayer-graphene superlattices and the transitions between the insulating phases at the charge neutrality point.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Dual-gated hBN/bilayer-graphene superlattices and the transitions between the insulating phases at the charge neutrality point|Takuya Iwasaki,Yoshifumi Morita,Kenji Watanabe,Takashi Taniguchi###
(686747, 686747)
 We report on transport properties in dual-gated hexagonal boron nitride(h<missing VAR>BN)/bilayer-graphene (BLG) superlattices.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Dual-gated hBN/bilayer-graphene superlattices and the transitions between the insulating phases at the charge neutrality point|Takuya Iwasaki,Yoshifumi Morita,Kenji Watanabe,Takashi Taniguchi###
(686755, 686755)
 We report on transport properties in dual-gated hexagonal boron nitride(h<missing VAR>BN)/bilayer-graphene (BLG) superlattices.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Dual-gated hBN/bilayer-graphene superlattices and the transitions between the insulating phases at the charge neutrality point|Takuya Iwasaki,Yoshifumi Morita,Kenji Watanabe,Takashi Taniguchi###
(686766, 686766)
 Here, BLG is nontwisted, i.e.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(CNP)
###Dual-gated hBN/bilayer-graphene superlattices and the transitions between the insulating phases at the charge neutrality point|Takuya Iwasaki,Yoshifumi Morita,Kenji Watanabe,Takashi Taniguchi###
(686801, 686805)
 This paper focuses on the charge neutrality point (CNP) for a plain BLG.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Dual-gated hBN/bilayer-graphene superlattices and the transitions between the insulating phases at the charge neutrality point|Takuya Iwasaki,Yoshifumi Morita,Kenji Watanabe,Takashi Taniguchi###
(686813, 686813)
 This paper focuses on the charge neutrality point (CNP) for a plain BLG.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CNP
###Dual-gated hBN/bilayer-graphene superlattices and the transitions between the insulating phases at the charge neutrality point|Takuya Iwasaki,Yoshifumi Morita,Kenji Watanabe,Takashi Taniguchi###
(686845, 686847)
Under a perpendicular magnetic field, transitions between two insulating phasesat the CNP are detected by varying a displacement field with the study on theresistance-temperature characteristics and the magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BN/B
###Dual-gated hBN/bilayer-graphene superlattices and the transitions between the insulating phases at the charge neutrality point|Takuya Iwasaki,Yoshifumi Morita,Kenji Watanabe,Takashi Taniguchi###
(686913, 686916)
 This workopens avenues for exploring the global phase diagram of the h<missing VAR>BN/BLGsuperlattices beyond the CNP.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

CNP
###Dual-gated hBN/bilayer-graphene superlattices and the transitions between the insulating phases at the charge neutrality point|Takuya Iwasaki,Yoshifumi Morita,Kenji Watanabe,Takashi Taniguchi###
(686927, 686929)
 This workopens avenues for exploring the global phase diagram of the h<missing VAR>BN/BLGsuperlattices beyond the CNP.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Frequency-dependent Phonon-mediated Unidirectional Magnetoresistance in a Metal on an Insulator with Highly Nonequilibrium Magnons|Sean E. Sullivan,Hwijong Lee,Annie Weathers,Li Shi###
(686978, 686978)
 Heavy metal (HM)/magnet bilayers host many magnetoresistances (MR) and spincaloritronic effects.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Frequency-dependent Phonon-mediated Unidirectional Magnetoresistance in a Metal on an Insulator with Highly Nonequilibrium Magnons|Sean E. Sullivan,Hwijong Lee,Annie Weathers,Li Shi###
(687047, 687047)
 Here we show that the spin Peltier effect andelectron-phonon scattering produce much larger unidirectional MR of an HM<missing VAR> on amagnetic insulator than existing theories that neglect the interplay between MRand spin caloritronic effects.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LiF
###The origin of enhanced interfacial perpendicular magnetic anisotropy in LiF-inserted Fe/MgO interface|Shoya Sakamoto,Takayuki Nozaki,Shinji Yuasa,Kenta Amemiya,Shinji Miwa###
(687226, 687227)
The origin of enhanced interfacial perpendicular magnetic anisotropy in LiF-inserted Fe/MgO interface.
Featurization terminated normally.
0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/MgO
###The origin of enhanced interfacial perpendicular magnetic anisotropy in LiF-inserted Fe/MgO interface|Shoya Sakamoto,Takayuki Nozaki,Shinji Yuasa,Kenta Amemiya,Shinji Miwa###
(687231, 687234)
The origin of enhanced interfacial perpendicular magnetic anisotropy in LiF-inserted Fe/MgO interface.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Fe/MgO
###The origin of enhanced interfacial perpendicular magnetic anisotropy in LiF-inserted Fe/MgO interface|Shoya Sakamoto,Takayuki Nozaki,Shinji Yuasa,Kenta Amemiya,Shinji Miwa###
(687241, 687244)
 The Fe/MgO interface is an essential ingredient in spintronics as it showsgiant tunneling magnetoresistance and strong perpendicular magnetic anisotropy(PM<missing VAR>A).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

P
###The origin of enhanced interfacial perpendicular magnetic anisotropy in LiF-inserted Fe/MgO interface|Shoya Sakamoto,Takayuki Nozaki,Shinji Yuasa,Kenta Amemiya,Shinji Miwa###
(687285, 687285)
 The Fe/MgO interface is an essential ingredient in spintronics as it showsgiant tunneling magnetoresistance and strong perpendicular magnetic anisotropy(PM<missing VAR>A).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LiF
###The origin of enhanced interfacial perpendicular magnetic anisotropy in LiF-inserted Fe/MgO interface|Shoya Sakamoto,Takayuki Nozaki,Shinji Yuasa,Kenta Amemiya,Shinji Miwa###
(687313, 687314)
 A recent study demonstrated that the insertion of an ultra-thin LiFlayer between the Fe and MgO layers enhances PM<missing VAR>A significantly.
Featurization terminated normally.
0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###The origin of enhanced interfacial perpendicular magnetic anisotropy in LiF-inserted Fe/MgO interface|Shoya Sakamoto,Takayuki Nozaki,Shinji Yuasa,Kenta Amemiya,Shinji Miwa###
(687323, 687323)
 A recent study demonstrated that the insertion of an ultra-thin LiFlayer between the Fe and MgO layers enhances PM<missing VAR>A significantly.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###The origin of enhanced interfacial perpendicular magnetic anisotropy in LiF-inserted Fe/MgO interface|Shoya Sakamoto,Takayuki Nozaki,Shinji Yuasa,Kenta Amemiya,Shinji Miwa###
(687327, 687328)
 A recent study demonstrated that the insertion of an ultra-thin LiFlayer between the Fe and MgO layers enhances PM<missing VAR>A significantly.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###The origin of enhanced interfacial perpendicular magnetic anisotropy in LiF-inserted Fe/MgO interface|Shoya Sakamoto,Takayuki Nozaki,Shinji Yuasa,Kenta Amemiya,Shinji Miwa###
(687334, 687334)
 A recent study demonstrated that the insertion of an ultra-thin LiFlayer between the Fe and MgO layers enhances PM<missing VAR>A significantly.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###The origin of enhanced interfacial perpendicular magnetic anisotropy in LiF-inserted Fe/MgO interface|Shoya Sakamoto,Takayuki Nozaki,Shinji Yuasa,Kenta Amemiya,Shinji Miwa###
(687341, 687341)
 In this study,we perform x<missing VAR>-ray magnetic circular dichroism measurements on Fe/LiF/MgOmultilayers to reveal the origin of the PM<missing VAR>A enhancement.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/LiF/MgO
###The origin of enhanced interfacial perpendicular magnetic anisotropy in LiF-inserted Fe/MgO interface|Shoya Sakamoto,Takayuki Nozaki,Shinji Yuasa,Kenta Amemiya,Shinji Miwa###
(687367, 687373)
 In this study,we perform x<missing VAR>-ray magnetic circular dichroism measurements on Fe/LiF/MgOmultilayers to reveal the origin of the PM<missing VAR>A enhancement.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

P
###The origin of enhanced interfacial perpendicular magnetic anisotropy in LiF-inserted Fe/MgO interface|Shoya Sakamoto,Takayuki Nozaki,Shinji Yuasa,Kenta Amemiya,Shinji Miwa###
(687390, 687390)
 In this study,we perform x<missing VAR>-ray magnetic circular dichroism measurements on Fe/LiF/MgOmultilayers to reveal the origin of the PM<missing VAR>A enhancement.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LiF
###The origin of enhanced interfacial perpendicular magnetic anisotropy in LiF-inserted Fe/MgO interface|Shoya Sakamoto,Takayuki Nozaki,Shinji Yuasa,Kenta Amemiya,Shinji Miwa###
(687405, 687406)
 We find that the LiFinsertion increases the orbital-magnetic-moment anisotropy and thus themagnetic anisotropy energy.
Featurization terminated normally.
0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoSi
###Magnetoresistance and Kohler rule in the topological chiral semimetals CoSi|A. E. Petrova,O. A. Sobolevskii,S. M. Stishov###
(687523, 687524)
Magnetoresistance and Kohler rule in the topological chiral semimetals CoSi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[236.0, 1, 'with', 5],[241.0, 9.33, 'at', 5]

CoSi
###Magnetoresistance and Kohler rule in the topological chiral semimetals CoSi|A. E. Petrova,O. A. Sobolevskii,S. M. Stishov###
(687559, 687560)
 The transverse and longitudinal magnetoresistance (MR) of two samples of thetopological chiral semimetal CoSi with different RRR was studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[200.0, 1, 'with', 4],[205.0, 9.33, 'at', 4]

CoSi
###Magnetoresistance and Kohler rule in the topological chiral semimetals CoSi|A. E. Petrova,O. A. Sobolevskii,S. M. Stishov###
(687758, 687759)
 The Shubnikov de Haas quantum oscillations wereobserved and analyzed in both perpendicular and parallel configurations of thecurrent and magnetic field in sample CoSi 1 with RRR 9.33 at low temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[1.0, 1, 'with', 0],[6.0, 9.33, 'at', 0]

SrNbO3
###Large Rashba parameter for 4d strongly correlated perovskite oxide SrNbO3 ultrathin films|Hikaru Okuma,Yumiko Katayama,Kazunori Ueno###
(687797, 687800)
Large Rashba parameter for 4d strongly correlated perovskite oxide SrNbO3 ultrathin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 4, 'd', 0]

SrNbO3
###Large Rashba parameter for 4d strongly correlated perovskite oxide SrNbO3 ultrathin films|Hikaru Okuma,Yumiko Katayama,Kazunori Ueno###
(687821, 687824)
 To elucidate the spin relaxation mechanism of SrNbO3 (SNO) ultrathin films,the transport properties of a series of SNO films with various thicknesses weremeasured on both sides of the metal insulator transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 4, 'd', 1]

(SNO)
###Large Rashba parameter for 4d strongly correlated perovskite oxide SrNbO3 ultrathin films|Hikaru Okuma,Yumiko Katayama,Kazunori Ueno###
(687826, 687830)
 To elucidate the spin relaxation mechanism of SrNbO3 (SNO) ultrathin films,the transport properties of a series of SNO films with various thicknesses weremeasured on both sides of the metal insulator transition.
Featurization successful!
0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 4, 'd', 1]

SNO
###Large Rashba parameter for 4d strongly correlated perovskite oxide SrNbO3 ultrathin films|Hikaru Okuma,Yumiko Katayama,Kazunori Ueno###
(687852, 687854)
 To elucidate the spin relaxation mechanism of SrNbO3 (SNO) ultrathin films,the transport properties of a series of SNO films with various thicknesses weremeasured on both sides of the metal insulator transition.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 4, 'd', 1]

As
###Nonequilibrium Green's function approach to multi-band Cooper-pair transport: linear magnetoresistance effect due to nonunitary superconductivity|G. Tkachov###
(688236, 688236)
 As an applicationof the theory, we demonstrate a low-field linear magnetoresistance effect forsuperconductors with an induced nonunitary order parameter.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Zn
###Negative GMR Effect in current perpendicular-to-plane (Zn,Cr)Te/Cu/Co spin salves|W. G. Wang,C. Ni,L. R. Shah,X. M. Kou,J. Q. Xiao###
(688355, 688355)
Negative GMR Effect in current perpendicular-to-plane (Zn,Cr)Te/Cu/Co spin salves.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr
###Negative GMR Effect in current perpendicular-to-plane (Zn,Cr)Te/Cu/Co spin salves|W. G. Wang,C. Ni,L. R. Shah,X. M. Kou,J. Q. Xiao###
(688357, 688357)
Negative GMR Effect in current perpendicular-to-plane (Zn,Cr)Te/Cu/Co spin salves.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Te/Cu/Co
###Negative GMR Effect in current perpendicular-to-plane (Zn,Cr)Te/Cu/Co spin salves|W. G. Wang,C. Ni,L. R. Shah,X. M. Kou,J. Q. Xiao###
(688359, 688363)
Negative GMR Effect in current perpendicular-to-plane (Zn,Cr)Te/Cu/Co spin salves.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

(CPP)
###Negative GMR Effect in current perpendicular-to-plane (Zn,Cr)Te/Cu/Co spin salves|W. G. Wang,C. Ni,L. R. Shah,X. M. Kou,J. Q. Xiao###
(688395, 688399)
 Magnetic and transport properties are explored in the currentperpendicular-to-plane (CPP) spin salves with Cr doped wide band gapsemiconductor ZnTe as one of the ferromagnetic electrodes.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr
###Negative GMR Effect in current perpendicular-to-plane (Zn,Cr)Te/Cu/Co spin salves|W. G. Wang,C. Ni,L. R. Shah,X. M. Kou,J. Q. Xiao###
(688407, 688407)
 Magnetic and transport properties are explored in the currentperpendicular-to-plane (CPP) spin salves with Cr doped wide band gapsemiconductor ZnTe as one of the ferromagnetic electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZnTe
###Negative GMR Effect in current perpendicular-to-plane (Zn,Cr)Te/Cu/Co spin salves|W. G. Wang,C. Ni,L. R. Shah,X. M. Kou,J. Q. Xiao###
(688420, 688421)
 Magnetic and transport properties are explored in the currentperpendicular-to-plane (CPP) spin salves with Cr doped wide band gapsemiconductor ZnTe as one of the ferromagnetic electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CPP
###Negative GMR Effect in current perpendicular-to-plane (Zn,Cr)Te/Cu/Co spin salves|W. G. Wang,C. Ni,L. R. Shah,X. M. Kou,J. Q. Xiao###
(688451, 688453)
 A negativemagnetoresistance is observed in these CPP spin valves at low temperature, witha strong temperature dependence.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Zn
###Negative GMR Effect in current perpendicular-to-plane (Zn,Cr)Te/Cu/Co spin salves|W. G. Wang,C. Ni,L. R. Shah,X. M. Kou,J. Q. Xiao###
(688510, 688510)
 This effect can be explained by the largedifference of spin scattering asymmetry coefficients in (Zn,Cr)Te and Cobalt,due to the very different spin polarizations of the two materials as revealedby the DFT calculation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr
###Negative GMR Effect in current perpendicular-to-plane (Zn,Cr)Te/Cu/Co spin salves|W. G. Wang,C. Ni,L. R. Shah,X. M. Kou,J. Q. Xiao###
(688512, 688512)
 This effect can be explained by the largedifference of spin scattering asymmetry coefficients in (Zn,Cr)Te and Cobalt,due to the very different spin polarizations of the two materials as revealedby the DFT calculation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Te
###Negative GMR Effect in current perpendicular-to-plane (Zn,Cr)Te/Cu/Co spin salves|W. G. Wang,C. Ni,L. R. Shah,X. M. Kou,J. Q. Xiao###
(688514, 688514)
 This effect can be explained by the largedifference of spin scattering asymmetry coefficients in (Zn,Cr)Te and Cobalt,due to the very different spin polarizations of the two materials as revealedby the DFT calculation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Corbino magnetoresistance in neutral graphene|Vanessa Gall,Boris N. Narozhny,Igor V. Gornyi###
(688709, 688709)
 In theclean limit, magnetoresistance of a Corbino sample is determined by viscosity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Evidence for three-dimensional Dirac semimetal state in strongly correlated organic quasi-two-dimensional material|Naoya Tajima,Yoshitaka Kawasugi,Takao Morinari,Ryuhei Oka,Toshio Naito,Reizo Kato###
(688879, 688879)
 Here, we observe thatmolecule-based quasi-two-dimensional Dirac fermion system,alpha-(BEDT-TTF)2I3, exhibits chiral anomaly-induced negativemagnetoresistance and planar Hall effect upon entering the coherent inter-layertunneling regime under high pressure.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Evidence for three-dimensional Dirac semimetal state in strongly correlated organic quasi-two-dimensional material|Naoya Tajima,Yoshitaka Kawasugi,Takao Morinari,Ryuhei Oka,Toshio Naito,Reizo Kato###
(688886, 688886)
 Here, we observe thatmolecule-based quasi-two-dimensional Dirac fermion system,alpha-(BEDT-TTF)2I3, exhibits chiral anomaly-induced negativemagnetoresistance and planar Hall effect upon entering the coherent inter-layertunneling regime under high pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I3
###Evidence for three-dimensional Dirac semimetal state in strongly correlated organic quasi-two-dimensional material|Naoya Tajima,Yoshitaka Kawasugi,Takao Morinari,Ryuhei Oka,Toshio Naito,Reizo Kato###
(688889, 688890)
 Here, we observe thatmolecule-based quasi-two-dimensional Dirac fermion system,alpha-(BEDT-TTF)2I3, exhibits chiral anomaly-induced negativemagnetoresistance and planar Hall effect upon entering the coherent inter-layertunneling regime under high pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ag
###Electronic Transport Studies of Ag-doped Bi2Se3 Topological Insulator|Shailja Sharma,Shiv Kumar,Amit Kumar,Kenya Shimada,C. S. Yadav###
(689039, 689039)
Electronic Transport Studies of Ag-doped Bi2Se3 Topological Insulator.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 200, 'K', 2],[177.0, 20, 'K', 5],[232.0, 0.12, 'eV', 6]

Bi2Se3
###Electronic Transport Studies of Ag-doped Bi2Se3 Topological Insulator|Shailja Sharma,Shiv Kumar,Amit Kumar,Kenya Shimada,C. S. Yadav###
(689043, 689046)
Electronic Transport Studies of Ag-doped Bi2Se3 Topological Insulator.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 200, 'K', 2],[170.0, 20, 'K', 5],[225.0, 0.12, 'eV', 6]

S
###Electronic Transport Studies of Ag-doped Bi2Se3 Topological Insulator|Shailja Sharma,Shiv Kumar,Amit Kumar,Kenya Shimada,C. S. Yadav###
(689077, 689077)
 The structural, magnetotransport, and angle-resolved photoemissionspectroscopy (ARPES) of Ag-doped Bi2Se3 single crystals are presented.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 200, 'K', 1],[139.0, 20, 'K', 4],[194.0, 0.12, 'eV', 5]

Ag
###Electronic Transport Studies of Ag-doped Bi2Se3 Topological Insulator|Shailja Sharma,Shiv Kumar,Amit Kumar,Kenya Shimada,C. S. Yadav###
(689082, 689082)
 The structural, magnetotransport, and angle-resolved photoemissionspectroscopy (ARPES) of Ag-doped Bi2Se3 single crystals are presented.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 200, 'K', 1],[134.0, 20, 'K', 4],[189.0, 0.12, 'eV', 5]

Bi2Se3
###Electronic Transport Studies of Ag-doped Bi2Se3 Topological Insulator|Shailja Sharma,Shiv Kumar,Amit Kumar,Kenya Shimada,C. S. Yadav###
(689086, 689089)
 The structural, magnetotransport, and angle-resolved photoemissionspectroscopy (ARPES) of Ag-doped Bi2Se3 single crystals are presented.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 200, 'K', 1],[127.0, 20, 'K', 4],[182.0, 0.12, 'eV', 5]

Ag
###Electronic Transport Studies of Ag-doped Bi2Se3 Topological Insulator|Shailja Sharma,Shiv Kumar,Amit Kumar,Kenya Shimada,C. S. Yadav###
(689127, 689127)
Temperature dependent resistivity exhibits metallic behavior with a slopechange above 200 K for Ag-doped Bi2Se3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 200, 'K', 0],[89.0, 20, 'K', 3],[144.0, 0.12, 'eV', 4]

Bi2Se3
###Electronic Transport Studies of Ag-doped Bi2Se3 Topological Insulator|Shailja Sharma,Shiv Kumar,Amit Kumar,Kenya Shimada,C. S. Yadav###
(689131, 689134)
Temperature dependent resistivity exhibits metallic behavior with a slopechange above 200 K for Ag-doped Bi2Se3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 200, 'K', 0],[82.0, 20, 'K', 3],[137.0, 0.12, 'eV', 4]

S
###Electronic Transport Studies of Ag-doped Bi2Se3 Topological Insulator|Shailja Sharma,Shiv Kumar,Amit Kumar,Kenya Shimada,C. S. Yadav###
(689206, 689206)
 Furthermore,these results agree well with the ARPES spectra observed at T<missing VAR>  20 K, where theFermi level lies inside the bulk conduction band.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 200, 'K', 3],[10.0, 20, 'K', 0],[65.0, 0.12, 'eV', 1]

Ag
###Electronic Transport Studies of Ag-doped Bi2Se3 Topological Insulator|Shailja Sharma,Shiv Kumar,Amit Kumar,Kenya Shimada,C. S. Yadav###
(689277, 689277)
 The Dirac point of thetopological surface states is shifted toward higher binding energy ( 0.12 eV)for Ag-doped samples as compared to pristine Bi2Se3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 200, 'K', 4],[61.0, 20, 'K', 1],[6.0, 0.12, 'eV', 0]

Bi2Se3
###Electronic Transport Studies of Ag-doped Bi2Se3 Topological Insulator|Shailja Sharma,Shiv Kumar,Amit Kumar,Kenya Shimada,C. S. Yadav###
(689291, 689294)
 The Dirac point of thetopological surface states is shifted toward higher binding energy ( 0.12 eV)for Ag-doped samples as compared to pristine Bi2Se3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[168.0, 200, 'K', 4],[75.0, 20, 'K', 1],[20.0, 0.12, 'eV', 0]

K
###Negative transverse magnetoresistance due to negative off-diagonal mass in linear dispersion materials|Yudai Awashima,Yuki Fuseya###
(689368, 689368)
 This study calculated the magnetoresistance (MR) in the Dirac electronsystem, Dressellhaus-Kip-Kittel (D<missing VAR>KK) model, and nodal-line semimetals based onthe semiclassical Boltzmann theory, with particular focus on the detailedenergy dispersion structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

KK
###Negative transverse magnetoresistance due to negative off-diagonal mass in linear dispersion materials|Yudai Awashima,Yuki Fuseya###
(689544, 689545)
 The obtained negative MR in the D<missing VAR>KKmodel may explain the long-standing mystery in p<missing VAR>-type Si.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Negative transverse magnetoresistance due to negative off-diagonal mass in linear dispersion materials|Yudai Awashima,Yuki Fuseya###
(689568, 689568)
 The obtained negative MR in the D<missing VAR>KKmodel may explain the long-standing mystery in p<missing VAR>-type Si.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn3Si2Te6
###Anapole, chiral and orbital states in Mn3Si2Te6|Stephen W. Lovesey###
(689592, 689597)
Anapole, chiral and orbital states in Mn3Si2Te6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0.2727272727272727,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5454545454545454,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn3Si2Te6
###Anapole, chiral and orbital states in Mn3Si2Te6|Stephen W. Lovesey###
(689604, 689609)
 The ferrimagnet Mn3Si2Te6 attracts attention because of a recently discoveredcolossal magnetoresistance (CMR) with unique magnetic field properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0.2727272727272727,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5454545454545454,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Anapole, chiral and orbital states in Mn3Si2Te6|Stephen W. Lovesey###
(689631, 689631)
 The ferrimagnet Mn3Si2Te6 attracts attention because of a recently discoveredcolossal magnetoresistance (CMR) with unique magnetic field properties.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Anapole, chiral and orbital states in Mn3Si2Te6|Stephen W. Lovesey###
(689685, 689685)
 Animproved magnetic structure for the material has emerged from a neutrondiffraction study linked to understanding the CMR.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn3Si2Te6
###Anapole, chiral and orbital states in Mn3Si2Te6|Stephen W. Lovesey###
(689770, 689775)
 Moreover, it isshown that existence of these states in the low temperature form of Mn3Si2Te6,with a magnetic field applied, can be tested by neutron and resonant x<missing VAR>-raydiffraction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0.2727272727272727,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5454545454545454,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Observations of $ν=1$ Quantum Hall Effect and Inter-Band Effects of Magnetic fields on Hall Conductivity in Organic Massless Dirac Fermion System $α$-(BETS)$_2$I$_3$ under Pressure|K. Iwata,A. Koshiba,Y. Kawasugi,R. Kato,N. Tajima###
(689866, 689866)
Observations of 1 Quantum Hall Effect and Inter-Band Effects of Magnetic fields on Hall Conductivity in Organic Massless Dirac Fermion System -(BETS)2I3 under Pressure.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Observations of $ν=1$ Quantum Hall Effect and Inter-Band Effects of Magnetic fields on Hall Conductivity in Organic Massless Dirac Fermion System $α$-(BETS)$_2$I$_3$ under Pressure|K. Iwata,A. Koshiba,Y. Kawasugi,R. Kato,N. Tajima###
(689869, 689869)
Observations of 1 Quantum Hall Effect and Inter-Band Effects of Magnetic fields on Hall Conductivity in Organic Massless Dirac Fermion System -(BETS)2I3 under Pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I3
###Observations of $ν=1$ Quantum Hall Effect and Inter-Band Effects of Magnetic fields on Hall Conductivity in Organic Massless Dirac Fermion System $α$-(BETS)$_2$I$_3$ under Pressure|K. Iwata,A. Koshiba,Y. Kawasugi,R. Kato,N. Tajima###
(689872, 689873)
Observations of 1 Quantum Hall Effect and Inter-Band Effects of Magnetic fields on Hall Conductivity in Organic Massless Dirac Fermion System -(BETS)2I3 under Pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Observations of $ν=1$ Quantum Hall Effect and Inter-Band Effects of Magnetic fields on Hall Conductivity in Organic Massless Dirac Fermion System $α$-(BETS)$_2$I$_3$ under Pressure|K. Iwata,A. Koshiba,Y. Kawasugi,R. Kato,N. Tajima###
(689914, 689914)
 We investigated the magnetoresistance and the Hall effect in an organicmassless Dirac fermion system alpha-(BETS)2I3 under pressure.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Observations of $ν=1$ Quantum Hall Effect and Inter-Band Effects of Magnetic fields on Hall Conductivity in Organic Massless Dirac Fermion System $α$-(BETS)$_2$I$_3$ under Pressure|K. Iwata,A. Koshiba,Y. Kawasugi,R. Kato,N. Tajima###
(689917, 689917)
 We investigated the magnetoresistance and the Hall effect in an organicmassless Dirac fermion system alpha-(BETS)2I3 under pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I3
###Observations of $ν=1$ Quantum Hall Effect and Inter-Band Effects of Magnetic fields on Hall Conductivity in Organic Massless Dirac Fermion System $α$-(BETS)$_2$I$_3$ under Pressure|K. Iwata,A. Koshiba,Y. Kawasugi,R. Kato,N. Tajima###
(689920, 689921)
 We investigated the magnetoresistance and the Hall effect in an organicmassless Dirac fermion system alpha-(BETS)2I3 under pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Wide Range Thin-FIlm Ceramic Metal-Alloy Thermometers with Low Magnetoresistance|N. A. Fortune,J. E. Palmer-Fortune,A. Trainer,A. Bangura,N. Kondedan,A. Rydh###
(690093, 690093)
Wide Range Thin-FIlm Ceramic Metal-Alloy Thermometers with Low Magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[218.0, 35, 'tesla', 3]

Ni0.8Cr0.2
###Wide Range Thin-FIlm Ceramic Metal-Alloy Thermometers with Low Magnetoresistance|N. A. Fortune,J. E. Palmer-Fortune,A. Trainer,A. Bangura,N. Kondedan,A. Rydh###
(690239, 690242)
 Here wereport the development of a new granular-metal oxide ceramic composite (cermet)for this purpose formed by co-sputtering of the metallic alloy nichromeNi0.8Cr0.2 and the insulator silcon dioxide SiO2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 35, 'tesla', 1]

SiO2
###Wide Range Thin-FIlm Ceramic Metal-Alloy Thermometers with Low Magnetoresistance|N. A. Fortune,J. E. Palmer-Fortune,A. Trainer,A. Bangura,N. Kondedan,A. Rydh###
(690254, 690256)
 Here wereport the development of a new granular-metal oxide ceramic composite (cermet)for this purpose formed by co-sputtering of the metallic alloy nichromeNi0.8Cr0.2 and the insulator silcon dioxide SiO2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 35, 'tesla', 1]

K
###Wide Range Thin-FIlm Ceramic Metal-Alloy Thermometers with Low Magnetoresistance|N. A. Fortune,J. E. Palmer-Fortune,A. Trainer,A. Bangura,N. Kondedan,A. Rydh###
(690296, 690296)
 The resultingthin films are sensitive enough to be used from room temperature down to below100 m<missing VAR>K in magnetic fields up to at least 35 tesla.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 35, 'tesla', 0]

GaAs/AlGaAs
###Transverse Magnetoresistance of GaAs/AlGaAs Heterojunctions in the Presence of Parallel Magnetic Fields|J. M. Heisz,E. Zaremba###
(690328, 690333)
Transverse Magnetoresistance of GaAs/AlGaAs Heterojunctions in the Presence of Parallel Magnetic Fields.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

GaAs
###Transverse Magnetoresistance of GaAs/AlGaAs Heterojunctions in the Presence of Parallel Magnetic Fields|J. M. Heisz,E. Zaremba###
(690366, 690367)
 We have calculated the resistivity of a GaAsslash AlGaAs heterojunction inthe presence of both an in--plane magnetic field and a weak perpendicularcomponent using a semiclassical Boltzmann transport theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

AlGaAs
###Transverse Magnetoresistance of GaAs/AlGaAs Heterojunctions in the Presence of Parallel Magnetic Fields|J. M. Heisz,E. Zaremba###
(690370, 690372)
 We have calculated the resistivity of a GaAsslash AlGaAs heterojunction inthe presence of both an in--plane magnetic field and a weak perpendicularcomponent using a semiclassical Boltzmann transport theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Transverse Magnetoresistance of GaAs/AlGaAs Heterojunctions in the Presence of Parallel Magnetic Fields|J. M. Heisz,E. Zaremba###
(690648, 690649)
 The magnitude of the positive magnetoresistance isstrongly correlated with the residual acceptor impurity density in the GaAslayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Vertical transport in superlattices|Daniel L. Miller###
(690770, 690770)
 In the 1st chapter we make anhistorical introduction, then we discuss the geometry of the problem, and thephysical parameters associated with structure of electron minibands andstrength of external fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 1, 'st', 0],[98.0, 2, 'nd', 1],[143.0, 3, 'rd', 3],[215.0, 4, 'th', 4],[279.0, 5, 'th', 6]

In
###Vertical transport in superlattices|Daniel L. Miller###
(690909, 690909)
 Inthe 3rd chapter we provide quantum mechanical reasons for the above effect; weshow how a magnetic field bends narrow superlattice minibands, and we classifythe states into Landau-type and Stark-type.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 1, 'st', 3],[41.0, 2, 'nd', 2],[4.0, 3, 'rd', 0],[76.0, 4, 'th', 1],[140.0, 5, 'th', 3]

In
###Vertical transport in superlattices|Daniel L. Miller###
(690982, 690982)
 In the 4th chapter we computelongitudinal magnetoresistance of superlattices due to the imperfections of theinterfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[209.0, 1, 'st', 4],[114.0, 2, 'nd', 3],[69.0, 3, 'rd', 1],[3.0, 4, 'th', 0],[67.0, 5, 'th', 2]

In
###Vertical transport in superlattices|Daniel L. Miller###
(691046, 691046)
 In the 5th chapter we discuss the current-voltagecharacteristic of superlattice when an electric field destroys the one-minibandtransport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[273.0, 1, 'st', 6],[178.0, 2, 'nd', 5],[133.0, 3, 'rd', 3],[61.0, 4, 'th', 2],[3.0, 5, 'th', 0]

At
###Phase Relaxation of Electrons in Disordered Conductors|B. L. Altshuler,M. E. Gershenson,I. L. Aleiner###
(691509, 691509)
 At low temperatures, the phase relaxation rate is governed bycollisions between electrons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 1, 'D', 2]

CrO2/TiO2
###Assisted Tunneling in Ferromagnetic Junctions and Half-Metallic Oxides|A. M. Bratkovsky###
(692098, 692104)
 Examples of half-metallic systems areCrO2/TiO2 and CrO2/RuO2.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[316.0, 30, '%', 7],[105.0, 100, '%', 2],[16.0, 1000, 'percent', 1]

CrO2/RuO2
###Assisted Tunneling in Ferromagnetic Junctions and Half-Metallic Oxides|A. M. Bratkovsky###
(692108, 692114)
 Examples of half-metallic systems areCrO2/TiO2 and CrO2/RuO2.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[326.0, 30, '%', 7],[115.0, 100, '%', 2],[26.0, 1000, 'percent', 1]

Si
###Strong localization of electrons in quasi-one-dimensional conductors|Yu. B. Khavin,M. E. Gershenson,A. L. Bogdanov###
(692177, 692177)
 We report on the experimental study of electron transport in sub-micron-widewires fabricated from Si delta -doped GaAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Strong localization of electrons in quasi-one-dimensional conductors|Yu. B. Khavin,M. E. Gershenson,A. L. Bogdanov###
(692184, 692185)
 We report on the experimental study of electron transport in sub-micron-widewires fabricated from Si delta -doped GaAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Strong localization of electrons in quasi-one-dimensional conductors|Yu. B. Khavin,M. E. Gershenson,A. L. Bogdanov###
(692436, 692436)
 The study ofnon-linearity of the current-voltage characteristics provides information onthe distance between the critical hops which govern the resistance of Q1Dconductors in the strong localization (SL) regime.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Strong localization of electrons in quasi-one-dimensional conductors|Yu. B. Khavin,M. E. Gershenson,A. L. Bogdanov###
(692525, 692525)
 The method of measuring of the single-particle density of states(DoS) in the SL<missing VAR> regime has been suggested.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Strong localization of electrons in quasi-one-dimensional conductors|Yu. B. Khavin,M. E. Gershenson,A. L. Bogdanov###
(692532, 692532)
 The method of measuring of the single-particle density of states(DoS) in the SL<missing VAR> regime has been suggested.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Strong localization of electrons in quasi-one-dimensional conductors|Yu. B. Khavin,M. E. Gershenson,A. L. Bogdanov###
(692564, 692564)
 Our data indicate that there is aminimum of DoS at the Fermi level due to the long-range Coulomb interaction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Interaction effects and phase relaxation in disordered systems|I. L. Aleiner,B. L. Altshuler,M. E. Gershenson###
(693091, 693091)
 In particular, we demonstrate explicitlythat recent attempts to justify theoretically that the dephasing rate(extracted from the magnetoresistance) remains finite at zero temperature arebased on the profoundly incorrect calculation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Critical point for the strong field magnetoresistance of a normal conductor/perfect insulator/perfect conductor composite with a random columnar microstructure|David J. Bergman###
(693656, 693656)
 A recently developed self-consistent effective medium approximation, forcomposites with a columnar microstructure, is applied to such athree-constituent mixture of isotropic normal conductor, perfect insulator, andperfect conductor, where a strong magnetic field bf B is present in theplane perpendicular to the columnar axis.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Critical point for the strong field magnetoresistance of a normal conductor/perfect insulator/perfect conductor composite with a random columnar microstructure|David J. Bergman###
(693736, 693736)
 When the insulating and perfectlyconducting constituents do not percolate in that plane, themicrostructure-induced in-plane magnetoresistance is found to saturate forlarge bf B, if the volume fraction of the perfect conductor p<missing VAR>S is greaterthan that of the perfect insulator p<missing VAR>I.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Critical point for the strong field magnetoresistance of a normal conductor/perfect insulator/perfect conductor composite with a random columnar microstructure|David J. Bergman###
(693756, 693756)
 When the insulating and perfectlyconducting constituents do not percolate in that plane, themicrostructure-induced in-plane magnetoresistance is found to saturate forlarge bf B, if the volume fraction of the perfect conductor p<missing VAR>S is greaterthan that of the perfect insulator p<missing VAR>I.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Critical point for the strong field magnetoresistance of a normal conductor/perfect insulator/perfect conductor composite with a random columnar microstructure|David J. Bergman###
(693776, 693776)
 When the insulating and perfectlyconducting constituents do not percolate in that plane, themicrostructure-induced in-plane magnetoresistance is found to saturate forlarge bf B, if the volume fraction of the perfect conductor p<missing VAR>S is greaterthan that of the perfect insulator p<missing VAR>I.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Critical point for the strong field magnetoresistance of a normal conductor/perfect insulator/perfect conductor composite with a random columnar microstructure|David J. Bergman###
(693787, 693787)
 By contrast, if p<missing VAR>S<p<missing VAR>I, thatmagnetoresistance keeps increasing as bf B2 without ever saturating.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Critical point for the strong field magnetoresistance of a normal conductor/perfect insulator/perfect conductor composite with a random columnar microstructure|David J. Bergman###
(693790, 693790)
 By contrast, if p<missing VAR>S<p<missing VAR>I, thatmagnetoresistance keeps increasing as bf B2 without ever saturating.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B2
###Critical point for the strong field magnetoresistance of a normal conductor/perfect insulator/perfect conductor composite with a random columnar microstructure|David J. Bergman###
(693806, 693807)
 By contrast, if p<missing VAR>S<p<missing VAR>I, thatmagnetoresistance keeps increasing as bf B2 without ever saturating.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Critical point for the strong field magnetoresistance of a normal conductor/perfect insulator/perfect conductor composite with a random columnar microstructure|David J. Bergman###
(693841, 693841)
 Thisabrupt change in the macroscopic response, which occurs when pSpI, is acritical point, with the associated critical exponents and scaling behaviorthat are characteristic of such points.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Spin-splitting in GaAs 2D holes|S. J. Papadakis,E. P. De Poortere,M. Shayegan,R. Winkler###
(693952, 693953)
Spin-splitting in GaAs 2D holes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[1.0, 2, 'D', 0],[137.0, 2, 'D', 3],[181.0, 2, 'D', 4],[254.0, 2, 'D', 5],[326.0, 2, 'D', 7]

GaAs
###Spin-splitting in GaAs 2D holes|S. J. Papadakis,E. P. De Poortere,M. Shayegan,R. Winkler###
(694014, 694015)
 We present quantitative measurements and calculations of the spin-orbitinduced zero-magnetic-field spin-splitting in two-dimensional (2D) hole systemsin modulation-doped GaAs (311)A quantum wells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 2, 'D', 1],[75.0, 2, 'D', 2],[119.0, 2, 'D', 3],[192.0, 2, 'D', 4],[264.0, 2, 'D', 6]

In
###Spin-splitting in GaAs 2D holes|S. J. Papadakis,E. P. De Poortere,M. Shayegan,R. Winkler###
(694049, 694049)
 In particular, via a combination of back- andfront-gate biases, we can tune the splitting while keeping the 2D hole densityconstant.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 2, 'D', 3],[41.0, 2, 'D', 0],[85.0, 2, 'D', 1],[158.0, 2, 'D', 2],[230.0, 2, 'D', 4]

(B)
###Quasiclassical magnetotransport in a random array of antidots|D. G. Polyakov,F. Evers,A. D. Mirlin,P. Woelfle###
(694393, 694395)
 We study theoretically the magnetoresistance rhoxx(B) of atwo-dimensional electron gas scattered by a random ensemble of impenetrablediscs in the presence of a long-range correlated random potential.
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(B)
###Quasiclassical magnetotransport in a random array of antidots|D. G. Polyakov,F. Evers,A. D. Mirlin,P. Woelfle###
(694522, 694524)
 We show that the interplay of scattering by the twotypes of disorder generates new behavior of rhoxx(B) which is absent foronly one kind of disorder.
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Quasiclassical magnetotransport in a random array of antidots|D. G. Polyakov,F. Evers,A. D. Mirlin,P. Woelfle###
(694573, 694573)
 We demonstrate that even a weak long-range disorderbecomes important with increasing B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Quasiclassical magnetotransport in a random array of antidots|D. G. Polyakov,F. Evers,A. D. Mirlin,P. Woelfle###
(694576, 694576)
 In particular, although rhoxx(B)vanishes in the limit of large B when only one type of disorder is present,we show that it keeps growing with increasing B in the antidot array in thepresence of smooth disorder.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(B)
###Quasiclassical magnetotransport in a random array of antidots|D. G. Polyakov,F. Evers,A. D. Mirlin,P. Woelfle###
(694585, 694587)
 In particular, although rhoxx(B)vanishes in the limit of large B when only one type of disorder is present,we show that it keeps growing with increasing B in the antidot array in thepresence of smooth disorder.
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Quasiclassical magnetotransport in a random array of antidots|D. G. Polyakov,F. Evers,A. D. Mirlin,P. Woelfle###
(694602, 694602)
 In particular, although rhoxx(B)vanishes in the limit of large B when only one type of disorder is present,we show that it keeps growing with increasing B in the antidot array in thepresence of smooth disorder.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Quasiclassical magnetotransport in a random array of antidots|D. G. Polyakov,F. Evers,A. D. Mirlin,P. Woelfle###
(694638, 694638)
 In particular, although rhoxx(B)vanishes in the limit of large B when only one type of disorder is present,we show that it keeps growing with increasing B in the antidot array in thepresence of smooth disorder.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(B)
###Quasiclassical magnetotransport in a random array of antidots|D. G. Polyakov,F. Evers,A. D. Mirlin,P. Woelfle###
(694676, 694678)
 The reversal of the behavior of rhoxx(B) isdue to a mutual destruction of the quasiclassical localization induced by astrong magnetic field specifically, the adiabatic localization in thelong-range Gaussian disorder is washed out by the scattering on hard discs,whereas the adiabatic drift and related percolation of cyclotron orbitsdestroys the localization in the dilute system of hard discs.
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(B)
###Quasiclassical magnetotransport in a random array of antidots|D. G. Polyakov,F. Evers,A. D. Mirlin,P. Woelfle###
(694855, 694857)
 For intermediatemagnetic fields in a dilute antidot array, we show the existence of a strongnegative magnetoresistance, which leads to a nonmonotonic dependence ofrhoxx(B).
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pr0.5Sr0.41Ca0.09MnO3
###Distinct origins of magnetic -field -induced resistivity irreversibility in two manganites with similar ground states : Pr$_{0.5}$Sr$_{0.41}$Ca$_{0.09}$MnO$_{3}$ and La$_{0.5}$Ca$_{0.5}$MnO$_{3}$|R. Mahendiran,A. Maignan,C. Martin,M. Hervieu,B. Raveau###
(694901, 694909)
Distinct origins of magnetic -field -induced resistivity irreversibility in two manganites with similar ground states  Pr0.5Sr0.41Ca0.09MnO3 and La0.5Ca0.5MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.018,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.08199999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 230, 'K', 2],[174.0, 170, 'K', 2],[182.0, 140, 'K', 2],[295.0, 0, 'T', 3],[330.0, 5, 'K', 4],[338.0, 7, 'T', 4]

La0.5Ca0.5MnO3
###Distinct origins of magnetic -field -induced resistivity irreversibility in two manganites with similar ground states : Pr$_{0.5}$Sr$_{0.41}$Ca$_{0.09}$MnO$_{3}$ and La$_{0.5}$Ca$_{0.5}$MnO$_{3}$|R. Mahendiran,A. Maignan,C. Martin,M. Hervieu,B. Raveau###
(694913, 694919)
Distinct origins of magnetic -field -induced resistivity irreversibility in two manganites with similar ground states  Pr0.5Sr0.41Ca0.09MnO3 and La0.5Ca0.5MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 230, 'K', 2],[164.0, 170, 'K', 2],[172.0, 140, 'K', 2],[285.0, 0, 'T', 3],[320.0, 5, 'K', 4],[328.0, 7, 'T', 4]

H
###Distinct origins of magnetic -field -induced resistivity irreversibility in two manganites with similar ground states : Pr$_{0.5}$Sr$_{0.41}$Ca$_{0.09}$MnO$_{3}$ and La$_{0.5}$Ca$_{0.5}$MnO$_{3}$|R. Mahendiran,A. Maignan,C. Martin,M. Hervieu,B. Raveau###
(694992, 694992)
 Our investigation of the magnetotransport in two charge ordered manganiteswith similar magnetic ground states reveals that the origin ofmagnetoresistance can not be concluded from the isofield resistivity, rho(T<missing VAR>, constant H), measurements alone.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 230, 'K', 1],[91.0, 170, 'K', 1],[99.0, 140, 'K', 1],[212.0, 0, 'T', 2],[247.0, 5, 'K', 3],[255.0, 7, 'T', 3]

Pr0.5Sr0.41Ca0.09MnO3
###Distinct origins of magnetic -field -induced resistivity irreversibility in two manganites with similar ground states : Pr$_{0.5}$Sr$_{0.41}$Ca$_{0.09}$MnO$_{3}$ and La$_{0.5}$Ca$_{0.5}$MnO$_{3}$|R. Mahendiran,A. Maignan,C. Martin,M. Hervieu,B. Raveau###
(695004, 695012)
 BothPr0.5Sr0.41Ca0.09MnO3 (PrSrCa) andLa0.5Ca0.5MnO3 (LaCa) show a ferromagnetic transition (T<missing VAR>C 260 K for PrSrCa, 230 K for LaCa) followed by an antiferromagnetic transition(T<missing VAR>N  170 K for PrSrCa, 140 K for LaCa).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.018,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.08199999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 230, 'K', 0],[71.0, 170, 'K', 0],[79.0, 140, 'K', 0],[192.0, 0, 'T', 1],[227.0, 5, 'K', 2],[235.0, 7, 'T', 2]

(PrSrCa)
###Distinct origins of magnetic -field -induced resistivity irreversibility in two manganites with similar ground states : Pr$_{0.5}$Sr$_{0.41}$Ca$_{0.09}$MnO$_{3}$ and La$_{0.5}$Ca$_{0.5}$MnO$_{3}$|R. Mahendiran,A. Maignan,C. Martin,M. Hervieu,B. Raveau###
(695014, 695018)
 BothPr0.5Sr0.41Ca0.09MnO3 (PrSrCa) andLa0.5Ca0.5MnO3 (LaCa) show a ferromagnetic transition (T<missing VAR>C 260 K for PrSrCa, 230 K for LaCa) followed by an antiferromagnetic transition(T<missing VAR>N  170 K for PrSrCa, 140 K for LaCa).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 230, 'K', 0],[65.0, 170, 'K', 0],[73.0, 140, 'K', 0],[186.0, 0, 'T', 1],[221.0, 5, 'K', 2],[229.0, 7, 'T', 2]

La0.5Ca0.5MnO3
###Distinct origins of magnetic -field -induced resistivity irreversibility in two manganites with similar ground states : Pr$_{0.5}$Sr$_{0.41}$Ca$_{0.09}$MnO$_{3}$ and La$_{0.5}$Ca$_{0.5}$MnO$_{3}$|R. Mahendiran,A. Maignan,C. Martin,M. Hervieu,B. Raveau###
(695023, 695029)
 BothPr0.5Sr0.41Ca0.09MnO3 (PrSrCa) andLa0.5Ca0.5MnO3 (LaCa) show a ferromagnetic transition (T<missing VAR>C 260 K for PrSrCa, 230 K for LaCa) followed by an antiferromagnetic transition(T<missing VAR>N  170 K for PrSrCa, 140 K for LaCa).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 230, 'K', 0],[54.0, 170, 'K', 0],[62.0, 140, 'K', 0],[175.0, 0, 'T', 1],[210.0, 5, 'K', 2],[218.0, 7, 'T', 2]

(LaCa)
###Distinct origins of magnetic -field -induced resistivity irreversibility in two manganites with similar ground states : Pr$_{0.5}$Sr$_{0.41}$Ca$_{0.09}$MnO$_{3}$ and La$_{0.5}$Ca$_{0.5}$MnO$_{3}$|R. Mahendiran,A. Maignan,C. Martin,M. Hervieu,B. Raveau###
(695031, 695034)
 BothPr0.5Sr0.41Ca0.09MnO3 (PrSrCa) andLa0.5Ca0.5MnO3 (LaCa) show a ferromagnetic transition (T<missing VAR>C 260 K for PrSrCa, 230 K for LaCa) followed by an antiferromagnetic transition(T<missing VAR>N  170 K for PrSrCa, 140 K for LaCa).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 230, 'K', 0],[49.0, 170, 'K', 0],[57.0, 140, 'K', 0],[170.0, 0, 'T', 1],[205.0, 5, 'K', 2],[213.0, 7, 'T', 2]

C
###Distinct origins of magnetic -field -induced resistivity irreversibility in two manganites with similar ground states : Pr$_{0.5}$Sr$_{0.41}$Ca$_{0.09}$MnO$_{3}$ and La$_{0.5}$Ca$_{0.5}$MnO$_{3}$|R. Mahendiran,A. Maignan,C. Martin,M. Hervieu,B. Raveau###
(695046, 695046)
 BothPr0.5Sr0.41Ca0.09MnO3 (PrSrCa) andLa0.5Ca0.5MnO3 (LaCa) show a ferromagnetic transition (T<missing VAR>C 260 K for PrSrCa, 230 K for LaCa) followed by an antiferromagnetic transition(T<missing VAR>N  170 K for PrSrCa, 140 K for LaCa).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 230, 'K', 0],[37.0, 170, 'K', 0],[45.0, 140, 'K', 0],[158.0, 0, 'T', 1],[193.0, 5, 'K', 2],[201.0, 7, 'T', 2]

K
###Distinct origins of magnetic -field -induced resistivity irreversibility in two manganites with similar ground states : Pr$_{0.5}$Sr$_{0.41}$Ca$_{0.09}$MnO$_{3}$ and La$_{0.5}$Ca$_{0.5}$MnO$_{3}$|R. Mahendiran,A. Maignan,C. Martin,M. Hervieu,B. Raveau###
(695052, 695052)
 BothPr0.5Sr0.41Ca0.09MnO3 (PrSrCa) andLa0.5Ca0.5MnO3 (LaCa) show a ferromagnetic transition (T<missing VAR>C 260 K for PrSrCa, 230 K for LaCa) followed by an antiferromagnetic transition(T<missing VAR>N  170 K for PrSrCa, 140 K for LaCa).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 230, 'K', 0],[31.0, 170, 'K', 0],[39.0, 140, 'K', 0],[152.0, 0, 'T', 1],[187.0, 5, 'K', 2],[195.0, 7, 'T', 2]

PrSrCa
###Distinct origins of magnetic -field -induced resistivity irreversibility in two manganites with similar ground states : Pr$_{0.5}$Sr$_{0.41}$Ca$_{0.09}$MnO$_{3}$ and La$_{0.5}$Ca$_{0.5}$MnO$_{3}$|R. Mahendiran,A. Maignan,C. Martin,M. Hervieu,B. Raveau###
(695056, 695058)
 BothPr0.5Sr0.41Ca0.09MnO3 (PrSrCa) andLa0.5Ca0.5MnO3 (LaCa) show a ferromagnetic transition (T<missing VAR>C 260 K for PrSrCa, 230 K for LaCa) followed by an antiferromagnetic transition(T<missing VAR>N  170 K for PrSrCa, 140 K for LaCa).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 230, 'K', 0],[25.0, 170, 'K', 0],[33.0, 140, 'K', 0],[146.0, 0, 'T', 1],[181.0, 5, 'K', 2],[189.0, 7, 'T', 2]

Ca
###Distinct origins of magnetic -field -induced resistivity irreversibility in two manganites with similar ground states : Pr$_{0.5}$Sr$_{0.41}$Ca$_{0.09}$MnO$_{3}$ and La$_{0.5}$Ca$_{0.5}$MnO$_{3}$|R. Mahendiran,A. Maignan,C. Martin,M. Hervieu,B. Raveau###
(695065, 695065)
 BothPr0.5Sr0.41Ca0.09MnO3 (PrSrCa) andLa0.5Ca0.5MnO3 (LaCa) show a ferromagnetic transition (T<missing VAR>C 260 K for PrSrCa, 230 K for LaCa) followed by an antiferromagnetic transition(T<missing VAR>N  170 K for PrSrCa, 140 K for LaCa).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 230, 'K', 0],[18.0, 170, 'K', 0],[26.0, 140, 'K', 0],[139.0, 0, 'T', 1],[174.0, 5, 'K', 2],[182.0, 7, 'T', 2]

N
###Distinct origins of magnetic -field -induced resistivity irreversibility in two manganites with similar ground states : Pr$_{0.5}$Sr$_{0.41}$Ca$_{0.09}$MnO$_{3}$ and La$_{0.5}$Ca$_{0.5}$MnO$_{3}$|R. Mahendiran,A. Maignan,C. Martin,M. Hervieu,B. Raveau###
(695081, 695081)
 BothPr0.5Sr0.41Ca0.09MnO3 (PrSrCa) andLa0.5Ca0.5MnO3 (LaCa) show a ferromagnetic transition (T<missing VAR>C 260 K for PrSrCa, 230 K for LaCa) followed by an antiferromagnetic transition(T<missing VAR>N  170 K for PrSrCa, 140 K for LaCa).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 230, 'K', 0],[2.0, 170, 'K', 0],[10.0, 140, 'K', 0],[123.0, 0, 'T', 1],[158.0, 5, 'K', 2],[166.0, 7, 'T', 2]

PrSrCa
###Distinct origins of magnetic -field -induced resistivity irreversibility in two manganites with similar ground states : Pr$_{0.5}$Sr$_{0.41}$Ca$_{0.09}$MnO$_{3}$ and La$_{0.5}$Ca$_{0.5}$MnO$_{3}$|R. Mahendiran,A. Maignan,C. Martin,M. Hervieu,B. Raveau###
(695087, 695089)
 BothPr0.5Sr0.41Ca0.09MnO3 (PrSrCa) andLa0.5Ca0.5MnO3 (LaCa) show a ferromagnetic transition (T<missing VAR>C 260 K for PrSrCa, 230 K for LaCa) followed by an antiferromagnetic transition(T<missing VAR>N  170 K for PrSrCa, 140 K for LaCa).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 230, 'K', 0],[4.0, 170, 'K', 0],[2.0, 140, 'K', 0],[115.0, 0, 'T', 1],[150.0, 5, 'K', 2],[158.0, 7, 'T', 2]

Ca
###Distinct origins of magnetic -field -induced resistivity irreversibility in two manganites with similar ground states : Pr$_{0.5}$Sr$_{0.41}$Ca$_{0.09}$MnO$_{3}$ and La$_{0.5}$Ca$_{0.5}$MnO$_{3}$|R. Mahendiran,A. Maignan,C. Martin,M. Hervieu,B. Raveau###
(695096, 695096)
 BothPr0.5Sr0.41Ca0.09MnO3 (PrSrCa) andLa0.5Ca0.5MnO3 (LaCa) show a ferromagnetic transition (T<missing VAR>C 260 K for PrSrCa, 230 K for LaCa) followed by an antiferromagnetic transition(T<missing VAR>N  170 K for PrSrCa, 140 K for LaCa).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 230, 'K', 0],[13.0, 170, 'K', 0],[5.0, 140, 'K', 0],[108.0, 0, 'T', 1],[143.0, 5, 'K', 2],[151.0, 7, 'T', 2]

(FC)
###Distinct origins of magnetic -field -induced resistivity irreversibility in two manganites with similar ground states : Pr$_{0.5}$Sr$_{0.41}$Ca$_{0.09}$MnO$_{3}$ and La$_{0.5}$Ca$_{0.5}$MnO$_{3}$|R. Mahendiran,A. Maignan,C. Martin,M. Hervieu,B. Raveau###
(695132, 695135)
 These compounds showqualitatively similar magnetotransport  Below the irreversibility temperatureTIR, field cooled (FC) resistivity is lower than zero field cooled (Z<missing VAR>FC)and decreases continuously with T<missing VAR>, whereas the Z<missing VAR>FC rho (T<missing VAR>, H) resembles the behavior of rho (T<missing VAR>, H  0 T).
Featurization successful!
0,0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 230, 'K', 1],[49.0, 170, 'K', 1],[41.0, 140, 'K', 1],[69.0, 0, 'T', 0],[104.0, 5, 'K', 1],[112.0, 7, 'T', 1]

C
###Distinct origins of magnetic -field -induced resistivity irreversibility in two manganites with similar ground states : Pr$_{0.5}$Sr$_{0.41}$Ca$_{0.09}$MnO$_{3}$ and La$_{0.5}$Ca$_{0.5}$MnO$_{3}$|R. Mahendiran,A. Maignan,C. Martin,M. Hervieu,B. Raveau###
(695154, 695154)
 These compounds showqualitatively similar magnetotransport  Below the irreversibility temperatureTIR, field cooled (FC) resistivity is lower than zero field cooled (Z<missing VAR>FC)and decreases continuously with T<missing VAR>, whereas the Z<missing VAR>FC rho (T<missing VAR>, H) resembles the behavior of rho (T<missing VAR>, H  0 T).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 230, 'K', 1],[71.0, 170, 'K', 1],[63.0, 140, 'K', 1],[50.0, 0, 'T', 0],[85.0, 5, 'K', 1],[93.0, 7, 'T', 1]

FC
###Distinct origins of magnetic -field -induced resistivity irreversibility in two manganites with similar ground states : Pr$_{0.5}$Sr$_{0.41}$Ca$_{0.09}$MnO$_{3}$ and La$_{0.5}$Ca$_{0.5}$MnO$_{3}$|R. Mahendiran,A. Maignan,C. Martin,M. Hervieu,B. Raveau###
(695174, 695175)
 These compounds showqualitatively similar magnetotransport  Below the irreversibility temperatureTIR, field cooled (FC) resistivity is lower than zero field cooled (Z<missing VAR>FC)and decreases continuously with T<missing VAR>, whereas the Z<missing VAR>FC rho (T<missing VAR>, H) resembles the behavior of rho (T<missing VAR>, H  0 T).
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 230, 'K', 1],[91.0, 170, 'K', 1],[83.0, 140, 'K', 1],[29.0, 0, 'T', 0],[64.0, 5, 'K', 1],[72.0, 7, 'T', 1]

H
###Distinct origins of magnetic -field -induced resistivity irreversibility in two manganites with similar ground states : Pr$_{0.5}$Sr$_{0.41}$Ca$_{0.09}$MnO$_{3}$ and La$_{0.5}$Ca$_{0.5}$MnO$_{3}$|R. Mahendiran,A. Maignan,C. Martin,M. Hervieu,B. Raveau###
(695183, 695183)
 These compounds showqualitatively similar magnetotransport  Below the irreversibility temperatureTIR, field cooled (FC) resistivity is lower than zero field cooled (Z<missing VAR>FC)and decreases continuously with T<missing VAR>, whereas the Z<missing VAR>FC rho (T<missing VAR>, H) resembles the behavior of rho (T<missing VAR>, H  0 T).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 230, 'K', 1],[100.0, 170, 'K', 1],[92.0, 140, 'K', 1],[21.0, 0, 'T', 0],[56.0, 5, 'K', 1],[64.0, 7, 'T', 1]

H
###Distinct origins of magnetic -field -induced resistivity irreversibility in two manganites with similar ground states : Pr$_{0.5}$Sr$_{0.41}$Ca$_{0.09}$MnO$_{3}$ and La$_{0.5}$Ca$_{0.5}$MnO$_{3}$|R. Mahendiran,A. Maignan,C. Martin,M. Hervieu,B. Raveau###
(695202, 695202)
 These compounds showqualitatively similar magnetotransport  Below the irreversibility temperatureTIR, field cooled (FC) resistivity is lower than zero field cooled (Z<missing VAR>FC)and decreases continuously with T<missing VAR>, whereas the Z<missing VAR>FC rho (T<missing VAR>, H) resembles the behavior of rho (T<missing VAR>, H  0 T).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 230, 'K', 1],[119.0, 170, 'K', 1],[111.0, 140, 'K', 1],[2.0, 0, 'T', 0],[37.0, 5, 'K', 1],[45.0, 7, 'T', 1]

C
###Distinct origins of magnetic -field -induced resistivity irreversibility in two manganites with similar ground states : Pr$_{0.5}$Sr$_{0.41}$Ca$_{0.09}$MnO$_{3}$ and La$_{0.5}$Ca$_{0.5}$MnO$_{3}$|R. Mahendiran,A. Maignan,C. Martin,M. Hervieu,B. Raveau###
(695219, 695219)
 The value of rho (Z<missing VAR>FC)/rho (FC) isapprox  104 at 5 K and mu0H  7 T in both compounds.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[159.0, 230, 'K', 2],[136.0, 170, 'K', 2],[128.0, 140, 'K', 2],[15.0, 0, 'T', 1],[20.0, 5, 'K', 0],[28.0, 7, 'T', 0]

(FC)
###Distinct origins of magnetic -field -induced resistivity irreversibility in two manganites with similar ground states : Pr$_{0.5}$Sr$_{0.41}$Ca$_{0.09}$MnO$_{3}$ and La$_{0.5}$Ca$_{0.5}$MnO$_{3}$|R. Mahendiran,A. Maignan,C. Martin,M. Hervieu,B. Raveau###
(695224, 695227)
 The value of rho (Z<missing VAR>FC)/rho (FC) isapprox  104 at 5 K and mu0H  7 T in both compounds.
Featurization successful!
0,0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 230, 'K', 2],[141.0, 170, 'K', 2],[133.0, 140, 'K', 2],[20.0, 0, 'T', 1],[12.0, 5, 'K', 0],[20.0, 7, 'T', 0]

H
###Distinct origins of magnetic -field -induced resistivity irreversibility in two manganites with similar ground states : Pr$_{0.5}$Sr$_{0.41}$Ca$_{0.09}$MnO$_{3}$ and La$_{0.5}$Ca$_{0.5}$MnO$_{3}$|R. Mahendiran,A. Maignan,C. Martin,M. Hervieu,B. Raveau###
(695245, 695245)
 The value of rho (Z<missing VAR>FC)/rho (FC) isapprox  104 at 5 K and mu0H  7 T in both compounds.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[185.0, 230, 'K', 2],[162.0, 170, 'K', 2],[154.0, 140, 'K', 2],[41.0, 0, 'T', 1],[6.0, 5, 'K', 0],[2.0, 7, 'T', 0]

LaCa
###Distinct origins of magnetic -field -induced resistivity irreversibility in two manganites with similar ground states : Pr$_{0.5}$Sr$_{0.41}$Ca$_{0.09}$MnO$_{3}$ and La$_{0.5}$Ca$_{0.5}$MnO$_{3}$|R. Mahendiran,A. Maignan,C. Martin,M. Hervieu,B. Raveau###
(695292, 695293)
 However,isothermal magnetic measurements suggest distinct origins of magnetoresistance Field cooling enhances ferromagnetic phase fraction in LaCa whereas it drivesPrSrCa into a metastable state with high magnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[232.0, 230, 'K', 3],[209.0, 170, 'K', 3],[201.0, 140, 'K', 3],[88.0, 0, 'T', 2],[53.0, 5, 'K', 1],[45.0, 7, 'T', 1]

PrSrCa
###Distinct origins of magnetic -field -induced resistivity irreversibility in two manganites with similar ground states : Pr$_{0.5}$Sr$_{0.41}$Ca$_{0.09}$MnO$_{3}$ and La$_{0.5}$Ca$_{0.5}$MnO$_{3}$|R. Mahendiran,A. Maignan,C. Martin,M. Hervieu,B. Raveau###
(695302, 695304)
 However,isothermal magnetic measurements suggest distinct origins of magnetoresistance Field cooling enhances ferromagnetic phase fraction in LaCa whereas it drivesPrSrCa into a metastable state with high magnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[242.0, 230, 'K', 3],[219.0, 170, 'K', 3],[211.0, 140, 'K', 3],[98.0, 0, 'T', 2],[63.0, 5, 'K', 1],[55.0, 7, 'T', 1]

Nb
###Hysteresis and Fractional Matching in Thin Nb Films with Rectangular Arrays of Nanoscaled Magnetic Dots|O. M. Stoll,M. I. Montero,J. Guimpel,Johan J. Akerman,Ivan K. Schuller###
(695372, 695372)
Hysteresis and Fractional Matching in Thin Nb Films with Rectangular Arrays of Nanoscaled Magnetic Dots.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nb
###Hysteresis and Fractional Matching in Thin Nb Films with Rectangular Arrays of Nanoscaled Magnetic Dots|O. M. Stoll,M. I. Montero,J. Guimpel,Johan J. Akerman,Ivan K. Schuller###
(695415, 695415)
 We have investigated the periodic pinning of magnetic flux quanta in thin Nbfilms with rectangular arrays of magnetic dots.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Hysteresis and Fractional Matching in Thin Nb Films with Rectangular Arrays of Nanoscaled Magnetic Dots|O. M. Stoll,M. I. Montero,J. Guimpel,Johan J. Akerman,Ivan K. Schuller###
(695433, 695433)
 In this type of pinninggeometry, a change in the periodicity and shape of the minima in themagnetoresistance occurs for magnetic fields exceeding a certain thresholdvalue.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Hysteresis and Fractional Matching in Thin Nb Films with Rectangular Arrays of Nanoscaled Magnetic Dots|O. M. Stoll,M. I. Montero,J. Guimpel,Johan J. Akerman,Ivan K. Schuller###
(695549, 695549)
 In this picture the dominating elastic energyat high fields forces the vortex lattice to form a square symmetry rather thanbeing commensurate to the rectangular geometry of the pinning array.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Hysteresis and Fractional Matching in Thin Nb Films with Rectangular Arrays of Nanoscaled Magnetic Dots|O. M. Stoll,M. I. Montero,J. Guimpel,Johan J. Akerman,Ivan K. Schuller###
(695614, 695614)
 In thispaper we present a comparative study of rectangular arrays with Ni-dots,Co-dots and holes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Hysteresis and Fractional Matching in Thin Nb Films with Rectangular Arrays of Nanoscaled Magnetic Dots|O. M. Stoll,M. I. Montero,J. Guimpel,Johan J. Akerman,Ivan K. Schuller###
(695639, 695639)
 In thispaper we present a comparative study of rectangular arrays with Ni-dots,Co-dots and holes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Hysteresis and Fractional Matching in Thin Nb Films with Rectangular Arrays of Nanoscaled Magnetic Dots|O. M. Stoll,M. I. Montero,J. Guimpel,Johan J. Akerman,Ivan K. Schuller###
(695645, 695645)
 In thispaper we present a comparative study of rectangular arrays with Ni-dots,Co-dots and holes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Hysteresis and Fractional Matching in Thin Nb Films with Rectangular Arrays of Nanoscaled Magnetic Dots|O. M. Stoll,M. I. Montero,J. Guimpel,Johan J. Akerman,Ivan K. Schuller###
(695654, 695654)
 In the magnetic dot arrays, we found a strong fractionalmatching effect up to the second order matching field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Hysteresis and Fractional Matching in Thin Nb Films with Rectangular Arrays of Nanoscaled Magnetic Dots|O. M. Stoll,M. I. Montero,J. Guimpel,Johan J. Akerman,Ivan K. Schuller###
(695695, 695695)
 In contrast, no clearfractional matching is seen after the reconfiguration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Zn
###Magnetotransport in the Normal State of La1.85Sr0.15Cu(1-y)Zn(y)O4 Films|A. Malinowski,Marta Z. Cieplak,S. Guha,Q. Wu,B. Kim,A. Krickser,A. Perali,K. Karpinska,M. Berkowski,C. H. Shang,P. Lindenfeld###
(695884, 695884)
Magnetotransport in the Normal State of La1.85Sr0.15Cu(1-y)Zn(y)O4 Films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 0, 'and', 1],[221.0, 70, 'K', 4]

O4
###Magnetotransport in the Normal State of La1.85Sr0.15Cu(1-y)Zn(y)O4 Films|A. Malinowski,Marta Z. Cieplak,S. Guha,Q. Wu,B. Kim,A. Krickser,A. Perali,K. Karpinska,M. Berkowski,C. H. Shang,P. Lindenfeld###
(695888, 695889)
Magnetotransport in the Normal State of La1.85Sr0.15Cu(1-y)Zn(y)O4 Films.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 0, 'and', 1],[216.0, 70, 'K', 4]

Zn
###Magnetotransport in the Normal State of La1.85Sr0.15Cu(1-y)Zn(y)O4 Films|A. Malinowski,Marta Z. Cieplak,S. Guha,Q. Wu,B. Kim,A. Krickser,A. Perali,K. Karpinska,M. Berkowski,C. H. Shang,P. Lindenfeld###
(695933, 695933)
 We have studied the magnetotransport properties in the normal state for aseries of La1.85Sr0.15Cu(1-y)Zn(y)O4 films with values of y<missing VAR>, between 0 and0.12.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 0, 'and', 0],[172.0, 70, 'K', 3]

O4
###Magnetotransport in the Normal State of La1.85Sr0.15Cu(1-y)Zn(y)O4 Films|A. Malinowski,Marta Z. Cieplak,S. Guha,Q. Wu,B. Kim,A. Krickser,A. Perali,K. Karpinska,M. Berkowski,C. H. Shang,P. Lindenfeld###
(695937, 695938)
 We have studied the magnetotransport properties in the normal state for aseries of La1.85Sr0.15Cu(1-y)Zn(y)O4 films with values of y<missing VAR>, between 0 and0.12.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 0, 'and', 0],[167.0, 70, 'K', 3]

In
###Magnetotransport in the Normal State of La1.85Sr0.15Cu(1-y)Zn(y)O4 Films|A. Malinowski,Marta Z. Cieplak,S. Guha,Q. Wu,B. Kim,A. Krickser,A. Perali,K. Karpinska,M. Berkowski,C. H. Shang,P. Lindenfeld###
(696026, 696026)
 Inparticular, the orbital magnetoresistance (OMR) varies with y<missing VAR> but isstrain-independent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 0, 'and', 2],[79.0, 70, 'K', 1]

O
###Magnetotransport in the Normal State of La1.85Sr0.15Cu(1-y)Zn(y)O4 Films|A. Malinowski,Marta Z. Cieplak,S. Guha,Q. Wu,B. Kim,A. Krickser,A. Perali,K. Karpinska,M. Berkowski,C. H. Shang,P. Lindenfeld###
(696039, 696039)
 Inparticular, the orbital magnetoresistance (OMR) varies with y<missing VAR> but isstrain-independent.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 0, 'and', 2],[66.0, 70, 'K', 1]

O
###Magnetotransport in the Normal State of La1.85Sr0.15Cu(1-y)Zn(y)O4 Films|A. Malinowski,Marta Z. Cieplak,S. Guha,Q. Wu,B. Kim,A. Krickser,A. Perali,K. Karpinska,M. Berkowski,C. H. Shang,P. Lindenfeld###
(696089, 696089)
 The relations for the resistivity and the Hall angle andthe proportionality between the OMR and tan2 theta are followed about 70 K.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 0, 'and', 3],[16.0, 70, 'K', 0]

O
###Magnetotransport in the Normal State of La1.85Sr0.15Cu(1-y)Zn(y)O4 Films|A. Malinowski,Marta Z. Cieplak,S. Guha,Q. Wu,B. Kim,A. Krickser,A. Perali,K. Karpinska,M. Berkowski,C. H. Shang,P. Lindenfeld###
(696216, 696216)
The OMR is more stronglysupressed by the addition of impurities than tan2 theta.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[264.0, 0, 'and', 6],[111.0, 70, 'K', 3]

La
###Magnetotransport in the Normal State of La1.85Sr0.15Cu(1-y)Zn(y)O4 Films|A. Malinowski,Marta Z. Cieplak,S. Guha,Q. Wu,B. Kim,A. Krickser,A. Perali,K. Karpinska,M. Berkowski,C. H. Shang,P. Lindenfeld###
(696330, 696330)
 We also suggest a correspondence between the transportproperties and the opening of the pseudogap at a temperature which changes whenthe La-sr ratio changes, but does not change with the addition of the zincimpurities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[378.0, 0, 'and', 8],[225.0, 70, 'K', 5]

CeRhIn5
###Magnetotransport of CeRhIn5|A. D. Christianson,A. Lacerda,M. F. Hundley,P. G. Pagliuso,J. L. Sarrao###
(696375, 696378)
Magnetotransport of CeRhIn5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0.7142857142857143,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 3.8, 'K', 1],[78.0, 1.4, 'K', 2],[81.0, 300, 'K', 2],[367.0, 40, 'K', 9]

N
###Magnetotransport of CeRhIn5|A. D. Christianson,A. Lacerda,M. F. Hundley,P. G. Pagliuso,J. L. Sarrao###
(696429, 696429)
 We report measurements of the temperature-dependent anisotropic resistivityand in-plane magnetoresistance on single crystals of the tetragonalheavy-fermion antiferromagnet (T<missing VAR>N  3.8 K) CeRhIn5.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 3.8, 'K', 0],[27.0, 1.4, 'K', 1],[30.0, 300, 'K', 1],[316.0, 40, 'K', 8]

CeRhIn5
###Magnetotransport of CeRhIn5|A. D. Christianson,A. Lacerda,M. F. Hundley,P. G. Pagliuso,J. L. Sarrao###
(696434, 696437)
 We report measurements of the temperature-dependent anisotropic resistivityand in-plane magnetoresistance on single crystals of the tetragonalheavy-fermion antiferromagnet (T<missing VAR>N  3.8 K) CeRhIn5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0.7142857142857143,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 3.8, 'K', 0],[19.0, 1.4, 'K', 1],[22.0, 300, 'K', 1],[308.0, 40, 'K', 8]

K
###Magnetotransport of CeRhIn5|A. D. Christianson,A. Lacerda,M. F. Hundley,P. G. Pagliuso,J. L. Sarrao###
(696519, 696519)
 The resistivity is moderately anisotropic, with a room-temperaturec<missing VAR>-axis to in-plane resistivity ratio rhoc<missing VAR>/rhoa(300 K)  1.7.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 3.8, 'K', 2],[63.0, 1.4, 'K', 1],[60.0, 300, 'K', 1],[226.0, 40, 'K', 6]

LaRhIn5
###Magnetotransport of CeRhIn5|A. D. Christianson,A. Lacerda,M. F. Hundley,P. G. Pagliuso,J. L. Sarrao###
(696544, 696547)
 rho(T)measurements on the non-magnetic analog LaRhIn5 indicate that the anisotropy inthe CeRhIn5 resistivity stems predominately from anisotropy in Kondo-derivedmagnetic scattering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0.7142857142857143,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 3.8, 'K', 3],[88.0, 1.4, 'K', 2],[85.0, 300, 'K', 2],[198.0, 40, 'K', 5]

CeRhIn5
###Magnetotransport of CeRhIn5|A. D. Christianson,A. Lacerda,M. F. Hundley,P. G. Pagliuso,J. L. Sarrao###
(696562, 696565)
 rho(T)measurements on the non-magnetic analog LaRhIn5 indicate that the anisotropy inthe CeRhIn5 resistivity stems predominately from anisotropy in Kondo-derivedmagnetic scattering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0.7142857142857143,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 3.8, 'K', 3],[106.0, 1.4, 'K', 2],[103.0, 300, 'K', 2],[180.0, 40, 'K', 5]

In
###Magnetotransport of CeRhIn5|A. D. Christianson,A. Lacerda,M. F. Hundley,P. G. Pagliuso,J. L. Sarrao###
(696589, 696589)
 In the magnetically ordered regime an applied field Hreduces T<missing VAR>N only slightly due to the small ordered moment (0.37muB) andmagnetic anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 3.8, 'K', 4],[133.0, 1.4, 'K', 3],[130.0, 300, 'K', 3],[156.0, 40, 'K', 4]

H
###Magnetotransport of CeRhIn5|A. D. Christianson,A. Lacerda,M. F. Hundley,P. G. Pagliuso,J. L. Sarrao###
(696605, 696605)
 In the magnetically ordered regime an applied field Hreduces T<missing VAR>N only slightly due to the small ordered moment (0.37muB) andmagnetic anisotropy.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[174.0, 3.8, 'K', 4],[149.0, 1.4, 'K', 3],[146.0, 300, 'K', 3],[140.0, 40, 'K', 4]

N
###Magnetotransport of CeRhIn5|A. D. Christianson,A. Lacerda,M. F. Hundley,P. G. Pagliuso,J. L. Sarrao###
(696611, 696611)
 In the magnetically ordered regime an applied field Hreduces T<missing VAR>N only slightly due to the small ordered moment (0.37muB) andmagnetic anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[180.0, 3.8, 'K', 4],[155.0, 1.4, 'K', 3],[152.0, 300, 'K', 3],[134.0, 40, 'K', 4]

B
###Magnetotransport of CeRhIn5|A. D. Christianson,A. Lacerda,M. F. Hundley,P. G. Pagliuso,J. L. Sarrao###
(696632, 696632)
 In the magnetically ordered regime an applied field Hreduces T<missing VAR>N only slightly due to the small ordered moment (0.37muB) andmagnetic anisotropy.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[201.0, 3.8, 'K', 4],[176.0, 1.4, 'K', 3],[173.0, 300, 'K', 3],[113.0, 40, 'K', 4]

N
###Magnetotransport of CeRhIn5|A. D. Christianson,A. Lacerda,M. F. Hundley,P. G. Pagliuso,J. L. Sarrao###
(696655, 696655)
 The magnetoresistance (MR) below T<missing VAR>N is positive and varieslinearly with H.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[224.0, 3.8, 'K', 5],[199.0, 1.4, 'K', 4],[196.0, 300, 'K', 4],[90.0, 40, 'K', 3]

H
###Magnetotransport of CeRhIn5|A. D. Christianson,A. Lacerda,M. F. Hundley,P. G. Pagliuso,J. L. Sarrao###
(696670, 696670)
 The magnetoresistance (MR) below T<missing VAR>N is positive and varieslinearly with H.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[239.0, 3.8, 'K', 5],[214.0, 1.4, 'K', 4],[211.0, 300, 'K', 4],[75.0, 40, 'K', 3]

In
###Magnetotransport of CeRhIn5|A. D. Christianson,A. Lacerda,M. F. Hundley,P. G. Pagliuso,J. L. Sarrao###
(696673, 696673)
 In the paramagnetic state a positive MR is present below 7.5K, while a high-field negative contribution is evident at higher temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[242.0, 3.8, 'K', 6],[217.0, 1.4, 'K', 5],[214.0, 300, 'K', 5],[72.0, 40, 'K', 2]

K
###Magnetotransport of CeRhIn5|A. D. Christianson,A. Lacerda,M. F. Hundley,P. G. Pagliuso,J. L. Sarrao###
(696697, 696697)
 In the paramagnetic state a positive MR is present below 7.5K, while a high-field negative contribution is evident at higher temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[266.0, 3.8, 'K', 6],[241.0, 1.4, 'K', 5],[238.0, 300, 'K', 5],[48.0, 40, 'K', 2]

H
###Magnetotransport of CeRhIn5|A. D. Christianson,A. Lacerda,M. F. Hundley,P. G. Pagliuso,J. L. Sarrao###
(696831, 696831)
 The H and T<missing VAR>-dependent magnetotransport reflects the magneticanisotropy and Kondo interactions at play in CeRhIn5.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[400.0, 3.8, 'K', 10],[375.0, 1.4, 'K', 9],[372.0, 300, 'K', 9],[86.0, 40, 'K', 2]

CeRhIn5
###Magnetotransport of CeRhIn5|A. D. Christianson,A. Lacerda,M. F. Hundley,P. G. Pagliuso,J. L. Sarrao###
(696862, 696865)
 The H and T<missing VAR>-dependent magnetotransport reflects the magneticanisotropy and Kondo interactions at play in CeRhIn5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0.7142857142857143,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[431.0, 3.8, 'K', 10],[406.0, 1.4, 'K', 9],[403.0, 300, 'K', 9],[117.0, 40, 'K', 2]

InSb
###Weak localization in InSb thin films heavily doped with lead|M. Oszwaldowski,T. Berus,V. K. Dugaev###
(696882, 696883)
Weak localization in InSb thin films heavily doped with lead.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 3, 'D', 1],[160.0, 4.2, 'K', 3],[203.0, 7, 'K', 4]

W
###Weak localization in InSb thin films heavily doped with lead|M. Oszwaldowski,T. Berus,V. K. Dugaev###
(696919, 696919)
 The paper reports on the investigations of the weak localization (WL) effectsin 3D polycrystalline thin films of InSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 3, 'D', 0],[124.0, 4.2, 'K', 2],[167.0, 7, 'K', 3]

InSb
###Weak localization in InSb thin films heavily doped with lead|M. Oszwaldowski,T. Berus,V. K. Dugaev###
(696937, 696938)
 The paper reports on the investigations of the weak localization (WL) effectsin 3D polycrystalline thin films of InSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 3, 'D', 0],[105.0, 4.2, 'K', 2],[148.0, 7, 'K', 3]

Pb
###Weak localization in InSb thin films heavily doped with lead|M. Oszwaldowski,T. Berus,V. K. Dugaev###
(697006, 697006)
 UnlessPb-doped, the InSb films do not show any measurable or show very small WL<missing VAR>effect at 4.2 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 3, 'D', 2],[37.0, 4.2, 'K', 0],[80.0, 7, 'K', 1]

InSb
###Weak localization in InSb thin films heavily doped with lead|M. Oszwaldowski,T. Berus,V. K. Dugaev###
(697013, 697014)
 UnlessPb-doped, the InSb films do not show any measurable or show very small WL<missing VAR>effect at 4.2 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 3, 'D', 2],[29.0, 4.2, 'K', 0],[72.0, 7, 'K', 1]

W
###Weak localization in InSb thin films heavily doped with lead|M. Oszwaldowski,T. Berus,V. K. Dugaev###
(697036, 697036)
 UnlessPb-doped, the InSb films do not show any measurable or show very small WL<missing VAR>effect at 4.2 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 3, 'D', 2],[7.0, 4.2, 'K', 0],[50.0, 7, 'K', 1]

Pb
###Weak localization in InSb thin films heavily doped with lead|M. Oszwaldowski,T. Berus,V. K. Dugaev###
(697048, 697048)
 The Pb-doping to the concentration of the order of 1018cm-3 leads to pronounced WL<missing VAR> effects below 7 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 3, 'D', 3],[5.0, 4.2, 'K', 1],[38.0, 7, 'K', 0]

W
###Weak localization in InSb thin films heavily doped with lead|M. Oszwaldowski,T. Berus,V. K. Dugaev###
(697080, 697080)
 The Pb-doping to the concentration of the order of 1018cm-3 leads to pronounced WL<missing VAR> effects below 7 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 3, 'D', 3],[37.0, 4.2, 'K', 1],[6.0, 7, 'K', 0]

In
###Weak localization in InSb thin films heavily doped with lead|M. Oszwaldowski,T. Berus,V. K. Dugaev###
(697089, 697089)
 In particular, a clearlymanifested SO scattering is observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 3, 'D', 4],[46.0, 4.2, 'K', 2],[3.0, 7, 'K', 1]

SO
###Weak localization in InSb thin films heavily doped with lead|M. Oszwaldowski,T. Berus,V. K. Dugaev###
(697101, 697102)
 In particular, a clearlymanifested SO scattering is observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[174.0, 3, 'D', 4],[58.0, 4.2, 'K', 2],[15.0, 7, 'K', 1]

W
###Weak localization in InSb thin films heavily doped with lead|M. Oszwaldowski,T. Berus,V. K. Dugaev###
(697149, 697149)
 From the comparison of the experimentaldata on temperature dependence of the magnetoresistivity and sample resistancewith the WL<missing VAR> theory, the temperature dependence of the phase destroying time isdetermined.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[222.0, 3, 'D', 5],[106.0, 4.2, 'K', 3],[63.0, 7, 'K', 2]

SO
###Weak localization in InSb thin films heavily doped with lead|M. Oszwaldowski,T. Berus,V. K. Dugaev###
(697257, 697258)
 The first is due to the SO scatterings and ischaracterized by temperature-independent relaxation time.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[330.0, 3, 'D', 8],[214.0, 4.2, 'K', 6],[171.0, 7, 'K', 5]

InSb
###Weak localization in InSb thin films heavily doped with lead|M. Oszwaldowski,T. Berus,V. K. Dugaev###
(697406, 697407)
 The temperature dependence ofthe resistance of the InSb<Pb> films can be explained by the electron-electroninteraction for T<missing VAR><1 K, and by the WL<missing VAR> effect for T<missing VAR>>2 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[479.0, 3, 'D', 13],[363.0, 4.2, 'K', 11],[320.0, 7, 'K', 10]

Pb
###Weak localization in InSb thin films heavily doped with lead|M. Oszwaldowski,T. Berus,V. K. Dugaev###
(697409, 697409)
 The temperature dependence ofthe resistance of the InSb<Pb> films can be explained by the electron-electroninteraction for T<missing VAR><1 K, and by the WL<missing VAR> effect for T<missing VAR>>2 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[482.0, 3, 'D', 13],[366.0, 4.2, 'K', 11],[323.0, 7, 'K', 10]

K
###Weak localization in InSb thin films heavily doped with lead|M. Oszwaldowski,T. Berus,V. K. Dugaev###
(697437, 697437)
 The temperature dependence ofthe resistance of the InSb<Pb> films can be explained by the electron-electroninteraction for T<missing VAR><1 K, and by the WL<missing VAR> effect for T<missing VAR>>2 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[510.0, 3, 'D', 13],[394.0, 4.2, 'K', 11],[351.0, 7, 'K', 10]

W
###Weak localization in InSb thin films heavily doped with lead|M. Oszwaldowski,T. Berus,V. K. Dugaev###
(697446, 697446)
 The temperature dependence ofthe resistance of the InSb<Pb> films can be explained by the electron-electroninteraction for T<missing VAR><1 K, and by the WL<missing VAR> effect for T<missing VAR>>2 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[519.0, 3, 'D', 13],[403.0, 4.2, 'K', 11],[360.0, 7, 'K', 10]

K
###Weak localization in InSb thin films heavily doped with lead|M. Oszwaldowski,T. Berus,V. K. Dugaev###
(697457, 697457)
 The temperature dependence ofthe resistance of the InSb<Pb> films can be explained by the electron-electroninteraction for T<missing VAR><1 K, and by the WL<missing VAR> effect for T<missing VAR>>2 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[530.0, 3, 'D', 13],[414.0, 4.2, 'K', 11],[371.0, 7, 'K', 10]

CuO2
###Decoupled CuO_2 and RuO_2 layers in superconducting and magnetically ordered RuSr_2GdCu_2O_8|M. Pozek,A. Dulcic,D. Paar,A. Hamzic,M. Basletic,E. Tafra,G. V. M. Williams,S. Kramer###
(697470, 697472)
Decoupled CuO2 and RuO2 layers in superconducting and magnetically ordered RuSr2GdCu2O8.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 8, 'T', 1]

RuO2
###Decoupled CuO_2 and RuO_2 layers in superconducting and magnetically ordered RuSr_2GdCu_2O_8|M. Pozek,A. Dulcic,D. Paar,A. Hamzic,M. Basletic,E. Tafra,G. V. M. Williams,S. Kramer###
(697476, 697478)
Decoupled CuO2 and RuO2 layers in superconducting and magnetically ordered RuSr2GdCu2O8.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 8, 'T', 1]

RuSr2GdCu2O8
###Decoupled CuO_2 and RuO_2 layers in superconducting and magnetically ordered RuSr_2GdCu_2O_8|M. Pozek,A. Dulcic,D. Paar,A. Hamzic,M. Basletic,E. Tafra,G. V. M. Williams,S. Kramer###
(697492, 697499)
Decoupled CuO2 and RuO2 layers in superconducting and magnetically ordered RuSr2GdCu2O8.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0.07142857142857142,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07142857142857142,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 8, 'T', 1]

RuSr2GdCu2O8
###Decoupled CuO_2 and RuO_2 layers in superconducting and magnetically ordered RuSr_2GdCu_2O_8|M. Pozek,A. Dulcic,D. Paar,A. Hamzic,M. Basletic,E. Tafra,G. V. M. Williams,S. Kramer###
(697561, 697568)
 Comprehensive measurements of dc and ac susceptibility, dc resistance,magnetoresistance, Hall resistivity, and microwave absorption and dispersion infields up to 8 T have been carried out on RuSr2GdCu2O8 with the aim toestablish the properties of RuO2 and CuO2 planes.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0.07142857142857142,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07142857142857142,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 8, 'T', 0]

RuO2
###Decoupled CuO_2 and RuO_2 layers in superconducting and magnetically ordered RuSr_2GdCu_2O_8|M. Pozek,A. Dulcic,D. Paar,A. Hamzic,M. Basletic,E. Tafra,G. V. M. Williams,S. Kramer###
(697587, 697589)
 Comprehensive measurements of dc and ac susceptibility, dc resistance,magnetoresistance, Hall resistivity, and microwave absorption and dispersion infields up to 8 T have been carried out on RuSr2GdCu2O8 with the aim toestablish the properties of RuO2 and CuO2 planes.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 8, 'T', 0]

CuO2
###Decoupled CuO_2 and RuO_2 layers in superconducting and magnetically ordered RuSr_2GdCu_2O_8|M. Pozek,A. Dulcic,D. Paar,A. Hamzic,M. Basletic,E. Tafra,G. V. M. Williams,S. Kramer###
(697593, 697595)
 Comprehensive measurements of dc and ac susceptibility, dc resistance,magnetoresistance, Hall resistivity, and microwave absorption and dispersion infields up to 8 T have been carried out on RuSr2GdCu2O8 with the aim toestablish the properties of RuO2 and CuO2 planes.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 8, 'T', 0]

At
###Decoupled CuO_2 and RuO_2 layers in superconducting and magnetically ordered RuSr_2GdCu_2O_8|M. Pozek,A. Dulcic,D. Paar,A. Hamzic,M. Basletic,E. Tafra,G. V. M. Williams,S. Kramer###
(697600, 697600)
 At 130 K, where themagnetic order develops in the RuO2 planes, one observes a change in the slopeof dc resistance, change in the sign of magnetoresistance, and the appearanceof an extraordinary Hall effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 8, 'T', 1]

K
###Decoupled CuO_2 and RuO_2 layers in superconducting and magnetically ordered RuSr_2GdCu_2O_8|M. Pozek,A. Dulcic,D. Paar,A. Hamzic,M. Basletic,E. Tafra,G. V. M. Williams,S. Kramer###
(697604, 697604)
 At 130 K, where themagnetic order develops in the RuO2 planes, one observes a change in the slopeof dc resistance, change in the sign of magnetoresistance, and the appearanceof an extraordinary Hall effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 8, 'T', 1]

RuO2
###Decoupled CuO_2 and RuO_2 layers in superconducting and magnetically ordered RuSr_2GdCu_2O_8|M. Pozek,A. Dulcic,D. Paar,A. Hamzic,M. Basletic,E. Tafra,G. V. M. Williams,S. Kramer###
(697622, 697624)
 At 130 K, where themagnetic order develops in the RuO2 planes, one observes a change in the slopeof dc resistance, change in the sign of magnetoresistance, and the appearanceof an extraordinary Hall effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 8, 'T', 1]

RuO2
###Decoupled CuO_2 and RuO_2 layers in superconducting and magnetically ordered RuSr_2GdCu_2O_8|M. Pozek,A. Dulcic,D. Paar,A. Hamzic,M. Basletic,E. Tafra,G. V. M. Williams,S. Kramer###
(697692, 697694)
 These features indicate that the RuO2 planesare conducting.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 8, 'T', 2]

RuO2
###Decoupled CuO_2 and RuO_2 layers in superconducting and magnetically ordered RuSr_2GdCu_2O_8|M. Pozek,A. Dulcic,D. Paar,A. Hamzic,M. Basletic,E. Tafra,G. V. M. Williams,S. Kramer###
(697793, 697795)
 We conclude that the conductivity in the RuO2 planes remainsnormal even when superconducting order is developed in the CuO2 planes below45 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[244.0, 8, 'T', 4]

CuO2
###Decoupled CuO_2 and RuO_2 layers in superconducting and magnetically ordered RuSr_2GdCu_2O_8|M. Pozek,A. Dulcic,D. Paar,A. Hamzic,M. Basletic,E. Tafra,G. V. M. Williams,S. Kramer###
(697820, 697822)
 We conclude that the conductivity in the RuO2 planes remainsnormal even when superconducting order is developed in the CuO2 planes below45 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[271.0, 8, 'T', 4]

K
###Decoupled CuO_2 and RuO_2 layers in superconducting and magnetically ordered RuSr_2GdCu_2O_8|M. Pozek,A. Dulcic,D. Paar,A. Hamzic,M. Basletic,E. Tafra,G. V. M. Williams,S. Kramer###
(697831, 697831)
 We conclude that the conductivity in the RuO2 planes remainsnormal even when superconducting order is developed in the CuO2 planes below45 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[282.0, 8, 'T', 4]

CuO2
###Decoupled CuO_2 and RuO_2 layers in superconducting and magnetically ordered RuSr_2GdCu_2O_8|M. Pozek,A. Dulcic,D. Paar,A. Hamzic,M. Basletic,E. Tafra,G. V. M. Williams,S. Kramer###
(697879, 697881)
 Thus, experimental evidence is provided in support of theoreticalmodels which base the coexistence of superconductivity and magnetic order ondecoupled CuO2 and RuO2 planes.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[330.0, 8, 'T', 5]

RuO2
###Decoupled CuO_2 and RuO_2 layers in superconducting and magnetically ordered RuSr_2GdCu_2O_8|M. Pozek,A. Dulcic,D. Paar,A. Hamzic,M. Basletic,E. Tafra,G. V. M. Williams,S. Kramer###
(697885, 697887)
 Thus, experimental evidence is provided in support of theoreticalmodels which base the coexistence of superconductivity and magnetic order ondecoupled CuO2 and RuO2 planes.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[336.0, 8, 'T', 5]

La1-x
###Magnetoresistances observed by decomposition of the magnetic moment in La1-xCaxMnO3 films|Hyun-Tak Kim,Kwang-Yong Kang,Eun-Hee Lee###
(697918, 697921)
Magnetoresistances observed by decomposition of the magnetic moment in La1-xCaxMnO3 films.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[221.0, 100, 'K', 3]

MnO3
###Magnetoresistances observed by decomposition of the magnetic moment in La1-xCaxMnO3 films|Hyun-Tak Kim,Kwang-Yong Kang,Eun-Hee Lee###
(697923, 697925)
Magnetoresistances observed by decomposition of the magnetic moment in La1-xCaxMnO3 films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[217.0, 100, 'K', 3]

H
###Magnetoresistances observed by decomposition of the magnetic moment in La1-xCaxMnO3 films|Hyun-Tak Kim,Kwang-Yong Kang,Eun-Hee Lee###
(697959, 697959)
 A ferromagnetic phase, characterized by electron carriers and a hightemperature colossal magnetoresistance (HTCMR) dependent on the magneticmoment, and a semiconducting phase, characterized by hole carriers and a lowtemperature CMR (LTCMR), are observed in La1-xCax<missing VAR>MnO3 thin filmsby the van der Pauw method.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[183.0, 100, 'K', 2]

C
###Magnetoresistances observed by decomposition of the magnetic moment in La1-xCaxMnO3 films|Hyun-Tak Kim,Kwang-Yong Kang,Eun-Hee Lee###
(698004, 698004)
 A ferromagnetic phase, characterized by electron carriers and a hightemperature colossal magnetoresistance (HTCMR) dependent on the magneticmoment, and a semiconducting phase, characterized by hole carriers and a lowtemperature CMR (LTCMR), are observed in La1-xCax<missing VAR>MnO3 thin filmsby the van der Pauw method.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 100, 'K', 2]

C
###Magnetoresistances observed by decomposition of the magnetic moment in La1-xCaxMnO3 films|Hyun-Tak Kim,Kwang-Yong Kang,Eun-Hee Lee###
(698011, 698011)
 A ferromagnetic phase, characterized by electron carriers and a hightemperature colossal magnetoresistance (HTCMR) dependent on the magneticmoment, and a semiconducting phase, characterized by hole carriers and a lowtemperature CMR (LTCMR), are observed in La1-xCax<missing VAR>MnO3 thin filmsby the van der Pauw method.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 100, 'K', 2]

La1-xCa
###Magnetoresistances observed by decomposition of the magnetic moment in La1-xCaxMnO3 films|Hyun-Tak Kim,Kwang-Yong Kang,Eun-Hee Lee###
(698023, 698027)
 A ferromagnetic phase, characterized by electron carriers and a hightemperature colossal magnetoresistance (HTCMR) dependent on the magneticmoment, and a semiconducting phase, characterized by hole carriers and a lowtemperature CMR (LTCMR), are observed in La1-xCax<missing VAR>MnO3 thin filmsby the van der Pauw method.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[115.0, 100, 'K', 2]

MnO3
###Magnetoresistances observed by decomposition of the magnetic moment in La1-xCaxMnO3 films|Hyun-Tak Kim,Kwang-Yong Kang,Eun-Hee Lee###
(698029, 698031)
 A ferromagnetic phase, characterized by electron carriers and a hightemperature colossal magnetoresistance (HTCMR) dependent on the magneticmoment, and a semiconducting phase, characterized by hole carriers and a lowtemperature CMR (LTCMR), are observed in La1-xCax<missing VAR>MnO3 thin filmsby the van der Pauw method.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 100, 'K', 2]

C
###Magnetoresistances observed by decomposition of the magnetic moment in La1-xCaxMnO3 films|Hyun-Tak Kim,Kwang-Yong Kang,Eun-Hee Lee###
(698055, 698055)
 The LTCMR is much more sensitive to the magneticfield than the HTCMR.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 100, 'K', 1]

H
###Magnetoresistances observed by decomposition of the magnetic moment in La1-xCaxMnO3 films|Hyun-Tak Kim,Kwang-Yong Kang,Eun-Hee Lee###
(698080, 698080)
 The LTCMR is much more sensitive to the magneticfield than the HTCMR.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 100, 'K', 1]

In
###Magnetoresistances observed by decomposition of the magnetic moment in La1-xCaxMnO3 films|Hyun-Tak Kim,Kwang-Yong Kang,Eun-Hee Lee###
(698087, 698087)
 In the ferromagnetic phase for films with anisotropicmoments in two dimensions, a remnant resistivity of the order of 10-8Omegam<missing VAR> is observed up to 100 K and increases exponentially with both atemperature up to Tc and a magnetic field above one Tesla (a positivemagnetoresistivity).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 100, 'K', 0]

H
###Magnetoresistances observed by decomposition of the magnetic moment in La1-xCaxMnO3 films|Hyun-Tak Kim,Kwang-Yong Kang,Eun-Hee Lee###
(698280, 698280)
 For resistances measured by the four-probe method with lineelectrodes, low temperature information of the HTCMR is not revealed.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 100, 'K', 2]

MgB2
###Angular dependence of magnetoresistivity in c-oriented MgB2 thin film|C. Ferdeghini,V. Braccini,M. R. Cimberle,D. Marre,P. Manfrinetti,V. Ferrando,M. Putti,A. Palenzona###
(698360, 698362)
Angular dependence of magnetoresistivity in c<missing VAR>-oriented MgB2 thin film.
Featurization terminated normally.
0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 1.2, 'and', 1],[56.0, 13.0, 'In', 1]

MgB2
###Angular dependence of magnetoresistivity in c-oriented MgB2 thin film|C. Ferdeghini,V. Braccini,M. R. Cimberle,D. Marre,P. Manfrinetti,V. Ferrando,M. Putti,A. Palenzona###
(698375, 698377)
 The anisotropy of MgB2 is still under debate its value, strongly dependenton the sample and on the measuring method, ranges between 1.2 and 13. In thiswork we present our results on a MgB2 c<missing VAR>-oriented superconducting thin film.
Featurization terminated normally.
0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 1.2, 'and', 0],[41.0, 13.0, 'In', 0]

MgB2
###Angular dependence of magnetoresistivity in c-oriented MgB2 thin film|C. Ferdeghini,V. Braccini,M. R. Cimberle,D. Marre,P. Manfrinetti,V. Ferrando,M. Putti,A. Palenzona###
(698437, 698439)
 The anisotropy of MgB2 is still under debate its value, strongly dependenton the sample and on the measuring method, ranges between 1.2 and 13. In thiswork we present our results on a MgB2 c<missing VAR>-oriented superconducting thin film.
Featurization terminated normally.
0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 1.2, 'and', 0],[19.0, 13.0, 'In', 0]

MgB2
###Angular dependence of magnetoresistivity in c-oriented MgB2 thin film|C. Ferdeghini,V. Braccini,M. R. Cimberle,D. Marre,P. Manfrinetti,V. Ferrando,M. Putti,A. Palenzona###
(698700, 698702)
 The obtained resultsare compared and discussed in the light of the two-band nature of MgB2.
Featurization terminated normally.
0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[283.0, 1.2, 'and', 4],[282.0, 13.0, 'In', 4]

InGaAs/InP
###Experimental study of weak antilocalization effect in a high mobility InGaAs/InP quantum well|S. A. Studenikin,P. T. Coleridge,N. Ahmed,P. Poole,A. Sachrajda###
(698764, 698769)
Experimental study of weak antilocalization effect in a high mobility InGaAs/InP quantum well.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[301.0, 2.0, 'Measurements', 5]

InGaAs/InP
###Experimental study of weak antilocalization effect in a high mobility InGaAs/InP quantum well|S. A. Studenikin,P. T. Coleridge,N. Ahmed,P. Poole,A. Sachrajda###
(698802, 698807)
 The magnetoresistance associated with quantum interference corrections in ahigh mobility, gated InGaAs/InP quantum well structure is studied as a functionof temperature, gate voltage, and angle of the tilted magnetic field.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[263.0, 2.0, 'Measurements', 4]

B
###Experimental study of weak antilocalization effect in a high mobility InGaAs/InP quantum well|S. A. Studenikin,P. T. Coleridge,N. Ahmed,P. Poole,A. Sachrajda###
(698925, 698925)
 Compared with metals and low mobility semiconductors thecharacteristic magnetic field Btr  hbar/4eD tau in high mobilitysamples is very small and the experimental dependencies of the interferenceeffects extend to fields several hundreds of times larger.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 2.0, 'Measurements', 2]

C
###Open Questions in CMR Manganites, Relevance of Clustered States, and Analogies with other Compounds|Elbio Dagotto###
(699262, 699262)
Open Questions in CMR Manganites, Relevance of Clustered States, and Analogies with other Compounds.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 2002.0, 'The', 3]

Si/SiGe
###Conductivity of a 2DEG in Si/SiGe heterostructure near metal- insulator transition: role of the short and long range scattering potential|E. B. Olshanetsky,V. Renard,Z. D. Kvon,J. C. Portal,N. J. Woods,J. Zhang,J. J Harris###
(699747, 699750)
Conductivity of a 2DEG in Si/SiGe heterostructure near metal- insulator transition role of the short and long range scattering potential.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[4.0, 2, 'DEG', 0],[382.0, 2, 'D', 6]

Si/SiGe
###Conductivity of a 2DEG in Si/SiGe heterostructure near metal- insulator transition: role of the short and long range scattering potential|E. B. Olshanetsky,V. Renard,Z. D. Kvon,J. C. Portal,N. J. Woods,J. Zhang,J. J Harris###
(699831, 699834)
 We report the observation of a metal-insulator transition (MIT) in a two-dimensional electron gas (2DEG) in a Si/SiGe heterostructure at zero magneticfield.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[88.0, 2, 'DEG', 1],[298.0, 2, 'D', 5]

H
###Conductivity of a 2DEG in Si/SiGe heterostructure near metal- insulator transition: role of the short and long range scattering potential|E. B. Olshanetsky,V. Renard,Z. D. Kvon,J. C. Portal,N. J. Woods,J. Zhang,J. J Harris###
(699902, 699902)
 On going through the MIT we observe the corresponding evolution of themagnetic field induced transition between the insulating phase and the quantumHall (Q<missing VAR>H) liquid state in the Q<missing VAR>H regime.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[159.0, 2, 'DEG', 2],[230.0, 2, 'D', 4]

H
###Conductivity of a 2DEG in Si/SiGe heterostructure near metal- insulator transition: role of the short and long range scattering potential|E. B. Olshanetsky,V. Renard,Z. D. Kvon,J. C. Portal,N. J. Woods,J. Zhang,J. J Harris###
(699914, 699914)
 On going through the MIT we observe the corresponding evolution of themagnetic field induced transition between the insulating phase and the quantumHall (Q<missing VAR>H) liquid state in the Q<missing VAR>H regime.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[171.0, 2, 'DEG', 2],[218.0, 2, 'D', 4]

GaAs
###Conductivity of a 2DEG in Si/SiGe heterostructure near metal- insulator transition: role of the short and long range scattering potential|E. B. Olshanetsky,V. Renard,Z. D. Kvon,J. C. Portal,N. J. Woods,J. Zhang,J. J Harris###
(699934, 699935)
 Similar to the previous reports for aGaAs sample, we find that the critical magnetic field needed to produce thetransition becomes zero at the critical electron density corresponding to thezero field MIT.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[191.0, 2, 'DEG', 3],[197.0, 2, 'D', 3]

At
###Conductivity of a 2DEG in Si/SiGe heterostructure near metal- insulator transition: role of the short and long range scattering potential|E. B. Olshanetsky,V. Renard,Z. D. Kvon,J. C. Portal,N. J. Woods,J. Zhang,J. J Harris###
(700149, 700149)
 At the same time, the recent theory of magnetoresistance due toelectron-electron interaction in the case of arbitrary kBTtau/hbar,smooth disorder and classically strong fields does not seem to be quiteadequate for the description of the parabolic magnetoresistance observed in oursamples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[406.0, 2, 'DEG', 7],[17.0, 2, 'D', 1]

La0.3Ca0.7Mn0.8Cr0.2O3
###Suppression of charge-ordering and appearance of magnetoresistance in a spin-cluster glass manganite La0.3Ca0.7Mn0.8Cr0.2O3|T Sudyoadsuk,R Suryanarayanan,P Winotai,L. E. Wenger###
(700358, 700367)
Suppression of charge-ordering and appearance of magnetoresistance in a spin-cluster glass manganite La0.3Ca0.7Mn0.8Cr0.2O3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0.04,0.16,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 5, 'and', 1],[62.0, 300, 'K', 1],[73.0, 0, 'to', 1],[86.0, 260, 'K', 2],[288.0, 120, 'K', 4],[295.0, 300, 'K', 4],[325.0, 120, 'K', 4],[389.0, 120, 'K', 5]

La0.3Ca0.7MnO3
###Suppression of charge-ordering and appearance of magnetoresistance in a spin-cluster glass manganite La0.3Ca0.7Mn0.8Cr0.2O3|T Sudyoadsuk,R Suryanarayanan,P Winotai,L. E. Wenger###
(700384, 700390)
 The magnetic properties of electron-doped manganite La0.3Ca0.7MnO3 andLa0.3Ca0.7Mn0.8Cr0.2O3 polycrystalline samples prepared by sol-gel techniquehave been investigated between 5 and 300 K in magnetic fields ranging from 0 to5 T<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 5, 'and', 0],[39.0, 300, 'K', 0],[50.0, 0, 'to', 0],[63.0, 260, 'K', 1],[265.0, 120, 'K', 3],[272.0, 300, 'K', 3],[302.0, 120, 'K', 3],[366.0, 120, 'K', 4]

La0.3Ca0.7Mn0.8Cr0.2O3
###Suppression of charge-ordering and appearance of magnetoresistance in a spin-cluster glass manganite La0.3Ca0.7Mn0.8Cr0.2O3|T Sudyoadsuk,R Suryanarayanan,P Winotai,L. E. Wenger###
(700395, 700404)
 The magnetic properties of electron-doped manganite La0.3Ca0.7MnO3 andLa0.3Ca0.7Mn0.8Cr0.2O3 polycrystalline samples prepared by sol-gel techniquehave been investigated between 5 and 300 K in magnetic fields ranging from 0 to5 T<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0.04,0.16,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 5, 'and', 0],[25.0, 300, 'K', 0],[36.0, 0, 'to', 0],[49.0, 260, 'K', 1],[251.0, 120, 'K', 3],[258.0, 300, 'K', 3],[288.0, 120, 'K', 3],[352.0, 120, 'K', 4]

La0.3Ca0.7MnO3
###Suppression of charge-ordering and appearance of magnetoresistance in a spin-cluster glass manganite La0.3Ca0.7Mn0.8Cr0.2O3|T Sudyoadsuk,R Suryanarayanan,P Winotai,L. E. Wenger###
(700466, 700472)
 The transition at 260 K, attributed to charge ordering in La0.3Ca0.7MnO3,is completely suppressed in the Cr-substituted sample while the onset of amagnetic remanence followed by the appearance of a magnetic irreversibility atlower temperatures is observed in both samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 5, 'and', 1],[37.0, 300, 'K', 1],[26.0, 0, 'to', 1],[13.0, 260, 'K', 0],[183.0, 120, 'K', 2],[190.0, 300, 'K', 2],[220.0, 120, 'K', 2],[284.0, 120, 'K', 3]

Cr
###Suppression of charge-ordering and appearance of magnetoresistance in a spin-cluster glass manganite La0.3Ca0.7Mn0.8Cr0.2O3|T Sudyoadsuk,R Suryanarayanan,P Winotai,L. E. Wenger###
(700486, 700486)
 The transition at 260 K, attributed to charge ordering in La0.3Ca0.7MnO3,is completely suppressed in the Cr-substituted sample while the onset of amagnetic remanence followed by the appearance of a magnetic irreversibility atlower temperatures is observed in both samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 5, 'and', 1],[57.0, 300, 'K', 1],[46.0, 0, 'to', 1],[33.0, 260, 'K', 0],[169.0, 120, 'K', 2],[176.0, 300, 'K', 2],[206.0, 120, 'K', 2],[270.0, 120, 'K', 3]

La0.3Ca0.7MnO3
###Suppression of charge-ordering and appearance of magnetoresistance in a spin-cluster glass manganite La0.3Ca0.7Mn0.8Cr0.2O3|T Sudyoadsuk,R Suryanarayanan,P Winotai,L. E. Wenger###
(700569, 700575)
 These features indicate thatferromagnetic clusters coexist with either an antiferromagnetic phase forLa0.3Ca0.7MnO3 or a spin-cluster glass phase for La0.3Ca0.7Mn0.8Cr0.2O3 at thelowest temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 5, 'and', 2],[140.0, 300, 'K', 2],[129.0, 0, 'to', 2],[116.0, 260, 'K', 1],[80.0, 120, 'K', 1],[87.0, 300, 'K', 1],[117.0, 120, 'K', 1],[181.0, 120, 'K', 2]

La0.3Ca0.7Mn0.8Cr0.2O3
###Suppression of charge-ordering and appearance of magnetoresistance in a spin-cluster glass manganite La0.3Ca0.7Mn0.8Cr0.2O3|T Sudyoadsuk,R Suryanarayanan,P Winotai,L. E. Wenger###
(700591, 700600)
 These features indicate thatferromagnetic clusters coexist with either an antiferromagnetic phase forLa0.3Ca0.7MnO3 or a spin-cluster glass phase for La0.3Ca0.7Mn0.8Cr0.2O3 at thelowest temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0.04,0.16,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 5, 'and', 2],[162.0, 300, 'K', 2],[151.0, 0, 'to', 2],[138.0, 260, 'K', 1],[55.0, 120, 'K', 1],[62.0, 300, 'K', 1],[92.0, 120, 'K', 1],[156.0, 120, 'K', 2]

Cr
###Suppression of charge-ordering and appearance of magnetoresistance in a spin-cluster glass manganite La0.3Ca0.7Mn0.8Cr0.2O3|T Sudyoadsuk,R Suryanarayanan,P Winotai,L. E. Wenger###
(700631, 700631)
 The exponential temperature dependence of the resistivityfor the Cr-substituted sample is consistent with the small polaron hoppingmodel for 120 K < T<missing VAR> < 300 K, while the data are better described by Motts<missing VAR>hopping mechanism for T<missing VAR> < 120 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[203.0, 5, 'and', 3],[202.0, 300, 'K', 3],[191.0, 0, 'to', 3],[178.0, 260, 'K', 2],[24.0, 120, 'K', 0],[31.0, 300, 'K', 0],[61.0, 120, 'K', 0],[125.0, 120, 'K', 1]

La0.3Ca0.7MnO3
###Suppression of charge-ordering and appearance of magnetoresistance in a spin-cluster glass manganite La0.3Ca0.7Mn0.8Cr0.2O3|T Sudyoadsuk,R Suryanarayanan,P Winotai,L. E. Wenger###
(700703, 700709)
 Whereas the parent compound La0.3Ca0.7MnO3 isknown to show no magnetoresistance, a large negative magnetoresistance isobserved in the La0.3Ca0.7Mn0.8Cr0.2O3 sample below 120 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[275.0, 5, 'and', 4],[274.0, 300, 'K', 4],[263.0, 0, 'to', 4],[250.0, 260, 'K', 3],[48.0, 120, 'K', 1],[41.0, 300, 'K', 1],[11.0, 120, 'K', 1],[47.0, 120, 'K', 0]

La0.3Ca0.7Mn0.8Cr0.2O3
###Suppression of charge-ordering and appearance of magnetoresistance in a spin-cluster glass manganite La0.3Ca0.7Mn0.8Cr0.2O3|T Sudyoadsuk,R Suryanarayanan,P Winotai,L. E. Wenger###
(700742, 700751)
 Whereas the parent compound La0.3Ca0.7MnO3 isknown to show no magnetoresistance, a large negative magnetoresistance isobserved in the La0.3Ca0.7Mn0.8Cr0.2O3 sample below 120 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0.04,0.16,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[314.0, 5, 'and', 4],[313.0, 300, 'K', 4],[302.0, 0, 'to', 4],[289.0, 260, 'K', 3],[87.0, 120, 'K', 1],[80.0, 300, 'K', 1],[50.0, 120, 'K', 1],[5.0, 120, 'K', 0]

C
###Suppression of charge-ordering and appearance of magnetoresistance in a spin-cluster glass manganite La0.3Ca0.7Mn0.8Cr0.2O3|T Sudyoadsuk,R Suryanarayanan,P Winotai,L. E. Wenger###
(700768, 700768)
 The appearance ofthe CMR is attributed to spin dependent hopping between spin clusters and/orbetween ferromagnetic domains.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[340.0, 5, 'and', 5],[339.0, 300, 'K', 5],[328.0, 0, 'to', 5],[315.0, 260, 'K', 4],[113.0, 120, 'K', 2],[106.0, 300, 'K', 2],[76.0, 120, 'K', 2],[12.0, 120, 'K', 1]

GaAs
###Radiation-intensity and temperature dependence of microwave-induced magnetoresistance oscillations in high-mobility two-dimensional electron systems|X. L. Lei###
(700914, 700915)
 Electron interactions with impurities, transverseand longitudinal acoustic phonons in GaAs-based heterosystems are consideredsimultaneously.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuB6
###Electronic transport in EuB$_6$|G. A. Wigger,R. Monnier,H. R. Ott,D. P. Young,Z. Fisk###
(701227, 701229)
Electronic transport in EuB6.
Featurization terminated normally.
0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 300, 'K', 3],[131.0, 5.5, 'T', 3],[210.0, 20, 'K', 6],[369.0, 12.5, 'K', 8]

EuB6
###Electronic transport in EuB$_6$|G. A. Wigger,R. Monnier,H. R. Ott,D. P. Young,Z. Fisk###
(701232, 701234)
 EuB6 is a magnetic semiconductor in which defects introduce chargecarriers into the conduction band with the Fermi energy varying withtemperature and magnetic field.
Featurization terminated normally.
0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 300, 'K', 2],[126.0, 5.5, 'T', 2],[205.0, 20, 'K', 5],[364.0, 12.5, 'K', 7]

EuB6
###Electronic transport in EuB$_6$|G. A. Wigger,R. Monnier,H. R. Ott,D. P. Young,Z. Fisk###
(701314, 701316)
 We present experimental and theoretical work onthe electronic magnetotransport in single-crystalline EuB6.
Featurization terminated normally.
0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 300, 'K', 1],[44.0, 5.5, 'T', 1],[123.0, 20, 'K', 4],[282.0, 12.5, 'K', 6]

At
###Electronic transport in EuB$_6$|G. A. Wigger,R. Monnier,H. R. Ott,D. P. Young,Z. Fisk###
(701438, 701438)
 At 20 K the latter accounts for half of the observedHall voltage, and its importance decreases rapidly with increasing temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 300, 'K', 3],[78.0, 5.5, 'T', 3],[1.0, 20, 'K', 0],[160.0, 12.5, 'K', 2]

As
###Electronic transport in EuB$_6$|G. A. Wigger,R. Monnier,H. R. Ott,D. P. Young,Z. Fisk###
(701481, 701481)
As for Gd and its compounds, where the rare-earth ion adopts the same Hunds<missing VAR>rule ground state as Eu2 in EuB6, the standard antisymmetricscattering mechanisms underestimate the size of this contribution by severalorders of magnitude, while reproducing its shape almost perfectly.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 300, 'K', 4],[121.0, 5.5, 'T', 4],[42.0, 20, 'K', 1],[117.0, 12.5, 'K', 1]

Gd
###Electronic transport in EuB$_6$|G. A. Wigger,R. Monnier,H. R. Ott,D. P. Young,Z. Fisk###
(701485, 701485)
As for Gd and its compounds, where the rare-earth ion adopts the same Hunds<missing VAR>rule ground state as Eu2 in EuB6, the standard antisymmetricscattering mechanisms underestimate the size of this contribution by severalorders of magnitude, while reproducing its shape almost perfectly.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 300, 'K', 4],[125.0, 5.5, 'T', 4],[46.0, 20, 'K', 1],[113.0, 12.5, 'K', 1]

Eu2
###Electronic transport in EuB$_6$|G. A. Wigger,R. Monnier,H. R. Ott,D. P. Young,Z. Fisk###
(701522, 701523)
As for Gd and its compounds, where the rare-earth ion adopts the same Hunds<missing VAR>rule ground state as Eu2 in EuB6, the standard antisymmetricscattering mechanisms underestimate the size of this contribution by severalorders of magnitude, while reproducing its shape almost perfectly.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 300, 'K', 4],[162.0, 5.5, 'T', 4],[83.0, 20, 'K', 1],[75.0, 12.5, 'K', 1]

EuB6
###Electronic transport in EuB$_6$|G. A. Wigger,R. Monnier,H. R. Ott,D. P. Young,Z. Fisk###
(701527, 701529)
As for Gd and its compounds, where the rare-earth ion adopts the same Hunds<missing VAR>rule ground state as Eu2 in EuB6, the standard antisymmetricscattering mechanisms underestimate the size of this contribution by severalorders of magnitude, while reproducing its shape almost perfectly.
Featurization terminated normally.
0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[180.0, 300, 'K', 4],[167.0, 5.5, 'T', 4],[88.0, 20, 'K', 1],[69.0, 12.5, 'K', 1]

C
###Electronic transport in EuB$_6$|G. A. Wigger,R. Monnier,H. R. Ott,D. P. Young,Z. Fisk###
(701596, 701596)
 Well belowthe bulk ferromagnetic ordering at T<missing VAR>C  12.5 K, a two-band modelsuccessfully describes the magnetotransport.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[249.0, 300, 'K', 5],[236.0, 5.5, 'T', 5],[157.0, 20, 'K', 2],[2.0, 12.5, 'K', 0]

C
###Magnons in CMR pyrochlore Tl2Mn2O7|C. I. Ventura,M. Acquarone###
(701720, 701720)
Magnons in CMR pyrochlore Tl2Mn2O7.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 80, ',', 7],[219.0, 65, ',', 14]

Tl2Mn2O7
###Magnons in CMR pyrochlore Tl2Mn2O7|C. I. Ventura,M. Acquarone###
(701726, 701731)
Magnons in CMR pyrochlore Tl2Mn2O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6363636363636364,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 80, ',', 7],[208.0, 65, ',', 14]

Tl2Mn2O7
###Magnons in CMR pyrochlore Tl2Mn2O7|C. I. Ventura,M. Acquarone###
(701756, 701761)
 Well defined spin waves were observed when the spin dynamics of Tl2Mn2O7, thefirst pyrochlore compound found to exhibit colossal magnetoresistance, wasmeasured [J<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6363636363636364,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 80, ',', 6],[178.0, 65, ',', 13]

W
###Magnons in CMR pyrochlore Tl2Mn2O7|C. I. Ventura,M. Acquarone###
(701792, 701792)
W.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 80, ',', 5],[147.0, 65, ',', 12]

In
###Magnons in CMR pyrochlore Tl2Mn2O7|C. I. Ventura,M. Acquarone###
(701855, 701855)
 In this work, we present our calculationfor the spin waves in Tl2Mn2O7, which we described using the microscopicgeneric model proposed recently for this compound [C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 80, ',', 1],[84.0, 65, ',', 6]

Tl2Mn2O7
###Magnons in CMR pyrochlore Tl2Mn2O7|C. I. Ventura,M. Acquarone###
(701881, 701886)
 In this work, we present our calculationfor the spin waves in Tl2Mn2O7, which we described using the microscopicgeneric model proposed recently for this compound [C.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6363636363636364,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 80, ',', 1],[53.0, 65, ',', 6]

C
###Magnons in CMR pyrochlore Tl2Mn2O7|C. I. Ventura,M. Acquarone###
(701917, 701917)
 In this work, we present our calculationfor the spin waves in Tl2Mn2O7, which we described using the microscopicgeneric model proposed recently for this compound [C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 80, ',', 1],[22.0, 65, ',', 6]

I
###Magnons in CMR pyrochlore Tl2Mn2O7|C. I. Ventura,M. Acquarone###
(701919, 701919)
I.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 80, ',', 2],[20.0, 65, ',', 5]

B
###Magnons in CMR pyrochlore Tl2Mn2O7|C. I. Ventura,M. Acquarone###
(701937, 701937)
B 65, 14422(2002)].
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 80, ',', 7],[2.0, 65, ',', 0]

Mn4
###Magnons in CMR pyrochlore Tl2Mn2O7|C. I. Ventura,M. Acquarone###
(702007, 702008)
 We have employed a canonical transformation todetermine perturbatively the effective spin-wave Hamiltonian, obtainingtherefrom the renormalization of the ferromagnetic spin waves related to thelocalized Mn4 spins, due to their coupling with the conduction electronspresent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[198.0, 80, ',', 8],[68.0, 65, ',', 1]

C
###Suppression of a charge density wave ground state in high magnetic fields: spin and orbital mechanisms|D. Graf,J. S. Brooks,E. S. Choi,S. Uji,J. C. Dias,M. Almeida,M. Matos###
(702201, 702201)
 The charge density wave (CD<missing VAR>W) transition temperature in the quasi-onedimensional (Q1D) organic material of (Per)2Au(mnt)2 is relatively low(TCDW  12 K).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 12, 'K', 0],[106.0, 40, 'T', 1],[147.0, 45, 'T', 2],[150.0, 0.5, 'K', 2],[157.0, 12, 'K', 2],[300.0, 15, 'T', 5]

W
###Suppression of a charge density wave ground state in high magnetic fields: spin and orbital mechanisms|D. Graf,J. S. Brooks,E. S. Choi,S. Uji,J. C. Dias,M. Almeida,M. Matos###
(702203, 702203)
 The charge density wave (CD<missing VAR>W) transition temperature in the quasi-onedimensional (Q1D) organic material of (Per)2Au(mnt)2 is relatively low(TCDW  12 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 12, 'K', 0],[104.0, 40, 'T', 1],[145.0, 45, 'T', 2],[148.0, 0.5, 'K', 2],[155.0, 12, 'K', 2],[298.0, 15, 'T', 5]

Au
###Suppression of a charge density wave ground state in high magnetic fields: spin and orbital mechanisms|D. Graf,J. S. Brooks,E. S. Choi,S. Uji,J. C. Dias,M. Almeida,M. Matos###
(702237, 702237)
 The charge density wave (CD<missing VAR>W) transition temperature in the quasi-onedimensional (Q1D) organic material of (Per)2Au(mnt)2 is relatively low(TCDW  12 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 12, 'K', 0],[70.0, 40, 'T', 1],[111.0, 45, 'T', 2],[114.0, 0.5, 'K', 2],[121.0, 12, 'K', 2],[264.0, 15, 'T', 5]

W
###Suppression of a charge density wave ground state in high magnetic fields: spin and orbital mechanisms|D. Graf,J. S. Brooks,E. S. Choi,S. Uji,J. C. Dias,M. Almeida,M. Matos###
(702254, 702254)
 The charge density wave (CD<missing VAR>W) transition temperature in the quasi-onedimensional (Q1D) organic material of (Per)2Au(mnt)2 is relatively low(TCDW  12 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 12, 'K', 0],[53.0, 40, 'T', 1],[94.0, 45, 'T', 2],[97.0, 0.5, 'K', 2],[104.0, 12, 'K', 2],[247.0, 15, 'T', 5]

BCS
###Suppression of a charge density wave ground state in high magnetic fields: spin and orbital mechanisms|D. Graf,J. S. Brooks,E. S. Choi,S. Uji,J. C. Dias,M. Almeida,M. Matos###
(702270, 702272)
 Hence in a mean field BCS model, the CD<missing VAR>W state should becompletely suppressed in magnetic fields of order 30 - 40 T.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 12, 'K', 1],[35.0, 40, 'T', 0],[76.0, 45, 'T', 1],[79.0, 0.5, 'K', 1],[86.0, 12, 'K', 1],[229.0, 15, 'T', 4]

C
###Suppression of a charge density wave ground state in high magnetic fields: spin and orbital mechanisms|D. Graf,J. S. Brooks,E. S. Choi,S. Uji,J. C. Dias,M. Almeida,M. Matos###
(702279, 702279)
 Hence in a mean field BCS model, the CD<missing VAR>W state should becompletely suppressed in magnetic fields of order 30 - 40 T.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 12, 'K', 1],[28.0, 40, 'T', 0],[69.0, 45, 'T', 1],[72.0, 0.5, 'K', 1],[79.0, 12, 'K', 1],[222.0, 15, 'T', 4]

W
###Suppression of a charge density wave ground state in high magnetic fields: spin and orbital mechanisms|D. Graf,J. S. Brooks,E. S. Choi,S. Uji,J. C. Dias,M. Almeida,M. Matos###
(702281, 702281)
 Hence in a mean field BCS model, the CD<missing VAR>W state should becompletely suppressed in magnetic fields of order 30 - 40 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 12, 'K', 1],[26.0, 40, 'T', 0],[67.0, 45, 'T', 1],[70.0, 0.5, 'K', 1],[77.0, 12, 'K', 1],[220.0, 15, 'T', 4]

Au
###Suppression of a charge density wave ground state in high magnetic fields: spin and orbital mechanisms|D. Graf,J. S. Brooks,E. S. Choi,S. Uji,J. C. Dias,M. Almeida,M. Matos###
(702330, 702330)
 To explore thispossibility, the magnetoresistance of (Per)2Au(mnt)2 was investigated inmagnetic fields to 45 T for 0.5 K < T<missing VAR> < 12 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 12, 'K', 2],[23.0, 40, 'T', 1],[18.0, 45, 'T', 0],[21.0, 0.5, 'K', 0],[28.0, 12, 'K', 0],[171.0, 15, 'T', 3]

W
###Suppression of a charge density wave ground state in high magnetic fields: spin and orbital mechanisms|D. Graf,J. S. Brooks,E. S. Choi,S. Uji,J. C. Dias,M. Almeida,M. Matos###
(702386, 702386)
 For fields directed along the Q1Dmolecular stacking direction, TCDW decreases with field, terminating at about 37 T<missing VAR> for temperatures approaching zero.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 12, 'K', 3],[79.0, 40, 'T', 2],[38.0, 45, 'T', 1],[35.0, 0.5, 'K', 1],[28.0, 12, 'K', 1],[115.0, 15, 'T', 2]

C
###Suppression of a charge density wave ground state in high magnetic fields: spin and orbital mechanisms|D. Graf,J. S. Brooks,E. S. Choi,S. Uji,J. C. Dias,M. Almeida,M. Matos###
(702467, 702467)
 Results for this field orientation arein general agreement with theoretical predictions, including the fielddependence of the magnetoresistance and the energy gap, DeltaCD<missing VAR>W.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[211.0, 12, 'K', 4],[160.0, 40, 'T', 3],[119.0, 45, 'T', 2],[116.0, 0.5, 'K', 2],[109.0, 12, 'K', 2],[34.0, 15, 'T', 1]

W
###Suppression of a charge density wave ground state in high magnetic fields: spin and orbital mechanisms|D. Graf,J. S. Brooks,E. S. Choi,S. Uji,J. C. Dias,M. Almeida,M. Matos###
(702469, 702469)
 Results for this field orientation arein general agreement with theoretical predictions, including the fielddependence of the magnetoresistance and the energy gap, DeltaCD<missing VAR>W.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[213.0, 12, 'K', 4],[162.0, 40, 'T', 3],[121.0, 45, 'T', 2],[118.0, 0.5, 'K', 2],[111.0, 12, 'K', 2],[32.0, 15, 'T', 1]

C
###Suppression of a charge density wave ground state in high magnetic fields: spin and orbital mechanisms|D. Graf,J. S. Brooks,E. S. Choi,S. Uji,J. C. Dias,M. Almeida,M. Matos###
(702538, 702538)
However, for fields tilted away from the stacking direction, orbital effectsarise above 15 T that may be related to the return of un-nested Fermi surfacesections that develop as the CD<missing VAR>W state is suppressed.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[282.0, 12, 'K', 5],[231.0, 40, 'T', 4],[190.0, 45, 'T', 3],[187.0, 0.5, 'K', 3],[180.0, 12, 'K', 3],[37.0, 15, 'T', 0]

W
###Suppression of a charge density wave ground state in high magnetic fields: spin and orbital mechanisms|D. Graf,J. S. Brooks,E. S. Choi,S. Uji,J. C. Dias,M. Almeida,M. Matos###
(702540, 702540)
However, for fields tilted away from the stacking direction, orbital effectsarise above 15 T that may be related to the return of un-nested Fermi surfacesections that develop as the CD<missing VAR>W state is suppressed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[284.0, 12, 'K', 5],[233.0, 40, 'T', 4],[192.0, 45, 'T', 3],[189.0, 0.5, 'K', 3],[182.0, 12, 'K', 3],[39.0, 15, 'T', 0]

C
###Suppression of a charge density wave ground state in high magnetic fields: spin and orbital mechanisms|D. Graf,J. S. Brooks,E. S. Choi,S. Uji,J. C. Dias,M. Almeida,M. Matos###
(702583, 702583)
 These findings areconsistent with expectations that quasi-one dimensional metallic behavior willreturn outside the CD<missing VAR>W phase boundary.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[327.0, 12, 'K', 6],[276.0, 40, 'T', 5],[235.0, 45, 'T', 4],[232.0, 0.5, 'K', 4],[225.0, 12, 'K', 4],[82.0, 15, 'T', 1]

W
###Suppression of a charge density wave ground state in high magnetic fields: spin and orbital mechanisms|D. Graf,J. S. Brooks,E. S. Choi,S. Uji,J. C. Dias,M. Almeida,M. Matos###
(702585, 702585)
 These findings areconsistent with expectations that quasi-one dimensional metallic behavior willreturn outside the CD<missing VAR>W phase boundary.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[329.0, 12, 'K', 6],[278.0, 40, 'T', 5],[237.0, 45, 'T', 4],[234.0, 0.5, 'K', 4],[227.0, 12, 'K', 4],[84.0, 15, 'T', 1]

S
###Kubo formula for Floquet states and photoconductivity oscillations in a 2D electron gas|Manuel Torres,Alejandro Kunold###
(703127, 703127)
 The recent discovery of the microwave induced vanishing resistance states ina two dimensional electron system (2DES) is an unexpected and surprisingphenomena.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 2, 'D', 1],[34.0, 2, 'DES', 1],[494.0, 2, ',', 10]

In
###Kubo formula for Floquet states and photoconductivity oscillations in a 2D electron gas|Manuel Torres,Alejandro Kunold###
(703144, 703144)
 In these experiments the magnetoresistance of a high mobility 2DESunder the influence of microwave radiation of frequency omega at moderatevalues of the magnetic field, exhibits strong oscillations with zero-resistancestates (ZRS) governed by the ratio omega /omegac<missing VAR>, where omegac<missing VAR> is thecyclotron frequency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 2, 'D', 2],[17.0, 2, 'DES', 0],[477.0, 2, ',', 9]

S
###Kubo formula for Floquet states and photoconductivity oscillations in a 2D electron gas|Manuel Torres,Alejandro Kunold###
(703216, 703216)
 In these experiments the magnetoresistance of a high mobility 2DESunder the influence of microwave radiation of frequency omega at moderatevalues of the magnetic field, exhibits strong oscillations with zero-resistancestates (ZRS) governed by the ratio omega /omegac<missing VAR>, where omegac<missing VAR> is thecyclotron frequency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 2, 'D', 2],[55.0, 2, 'DES', 0],[405.0, 2, ',', 9]

In
###Kubo formula for Floquet states and photoconductivity oscillations in a 2D electron gas|Manuel Torres,Alejandro Kunold###
(703249, 703249)
 In this work we present a model for the photoconductivityof a two dimensional electron system (2DES) subjected to a magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 2, 'D', 3],[88.0, 2, 'DES', 1],[372.0, 2, ',', 8]

S
###Kubo formula for Floquet states and photoconductivity oscillations in a 2D electron gas|Manuel Torres,Alejandro Kunold###
(703286, 703286)
 In this work we present a model for the photoconductivityof a two dimensional electron system (2DES) subjected to a magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[203.0, 2, 'D', 3],[125.0, 2, 'DES', 1],[335.0, 2, ',', 8]

In
###Kubo formula for Floquet states and photoconductivity oscillations in a 2D electron gas|Manuel Torres,Alejandro Kunold###
(703344, 703344)
 In ourmodel, the Landau-Floquet states act coherently with respect to the oscillatingfield of the impurities, that in turn induces transitions between these levels.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[261.0, 2, 'D', 5],[183.0, 2, 'DES', 3],[277.0, 2, ',', 6]

Si
###Two-dimensional metal-insulator transition and in-plane magnetoresistance in a high mobility strained Si quantum well|K. Lai,W. Pan,D. C. Tsui,S. A. Lyon,M. Muhlberger,F. Schaffler###
(703675, 703675)
Two-dimensional metal-insulator transition and in-plane magnetoresistance in a high mobility strained Si quantum well.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 0.32, 'x', 2],[147.0, -2, ',', 2],[167.0, 2, 'D', 2],[200.0, 2, 'DES', 3],[336.0, 1.8, 'for', 6],[347.0, 0.35, 'x', 6],[354.0, 1.45, 'x', 6]

S
###Two-dimensional metal-insulator transition and in-plane magnetoresistance in a high mobility strained Si quantum well|K. Lai,W. Pan,D. C. Tsui,S. A. Lyon,M. Muhlberger,F. Schaffler###
(703717, 703717)
 The apparent metal-insulator transition is observed in a high qualitytwo-dimensional electron system (2DES) in the strained Si quantum well of aSi/Si1-xGex<missing VAR> heterostructure with mobility mu1.9 x<missing VAR> 105 cm2/Vs at densityn<missing VAR>1.45 x<missing VAR> 1011 cm-2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 0.32, 'x', 1],[105.0, -2, ',', 1],[125.0, 2, 'D', 1],[158.0, 2, 'DES', 2],[294.0, 1.8, 'for', 5],[305.0, 0.35, 'x', 5],[312.0, 1.45, 'x', 5]

Si
###Two-dimensional metal-insulator transition and in-plane magnetoresistance in a high mobility strained Si quantum well|K. Lai,W. Pan,D. C. Tsui,S. A. Lyon,M. Muhlberger,F. Schaffler###
(703726, 703726)
 The apparent metal-insulator transition is observed in a high qualitytwo-dimensional electron system (2DES) in the strained Si quantum well of aSi/Si1-xGex<missing VAR> heterostructure with mobility mu1.9 x<missing VAR> 105 cm2/Vs at densityn<missing VAR>1.45 x<missing VAR> 1011 cm-2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 0.32, 'x', 1],[96.0, -2, ',', 1],[116.0, 2, 'D', 1],[149.0, 2, 'DES', 2],[285.0, 1.8, 'for', 5],[296.0, 0.35, 'x', 5],[303.0, 1.45, 'x', 5]

Si/Si1-xGe
###Two-dimensional metal-insulator transition and in-plane magnetoresistance in a high mobility strained Si quantum well|K. Lai,W. Pan,D. C. Tsui,S. A. Lyon,M. Muhlberger,F. Schaffler###
(703737, 703743)
 The apparent metal-insulator transition is observed in a high qualitytwo-dimensional electron system (2DES) in the strained Si quantum well of aSi/Si1-xGex<missing VAR> heterostructure with mobility mu1.9 x<missing VAR> 105 cm2/Vs at densityn<missing VAR>1.45 x<missing VAR> 1011 cm-2.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[73.0, 0.32, 'x', 1],[79.0, -2, ',', 1],[99.0, 2, 'D', 1],[132.0, 2, 'DES', 2],[268.0, 1.8, 'for', 5],[279.0, 0.35, 'x', 5],[286.0, 1.45, 'x', 5]

H
###Classical Hall transition and magnetoresistance in strongly inhomogeneous planar systems|S. A. Bulgadaev###
(704234, 704234)
 These expressions allow todescribe the effective resistivity of various inhomogeneous media at arbitraryconcentrations x<missing VAR> and magnetic fields H.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Classical Hall transition and magnetoresistance in strongly inhomogeneous planar systems|S. A. Bulgadaev###
(704261, 704261)
 The corresponding plots of thex<missing VAR>-dependence of the Hall constant R<missing VAR>H(x<missing VAR>,H) and the magnetoresistanceR(x,H) are constructed for various values of magnetic field at some values ofinhomogeneity parameters.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Classical Hall transition and magnetoresistance in strongly inhomogeneous planar systems|S. A. Bulgadaev###
(704265, 704265)
 The corresponding plots of thex<missing VAR>-dependence of the Hall constant R<missing VAR>H(x<missing VAR>,H) and the magnetoresistanceR(x,H) are constructed for various values of magnetic field at some values ofinhomogeneity parameters.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Classical Hall transition and magnetoresistance in strongly inhomogeneous planar systems|S. A. Bulgadaev###
(704279, 704279)
 The corresponding plots of thex<missing VAR>-dependence of the Hall constant R<missing VAR>H(x<missing VAR>,H) and the magnetoresistanceR(x,H) are constructed for various values of magnetic field at some values ofinhomogeneity parameters.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Classical Hall transition and magnetoresistance in strongly inhomogeneous planar systems|S. A. Bulgadaev###
(704367, 704367)
 These plots for strongly inhomogeneous systems athigh magnetic fields show a sharp transition between partial Hall resistivities(or Hall conductivities) with different dependencies of R<missing VAR>H on the phaseconcentrations.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr
###Resistivity memory effect in La(1-x)Sr(x)MnO(3)|E. P. Khlybov,R. A. Sadykov,I. J. Kostyleva,W. I. Nizhankovskij,A. J. Zaleski,D. Wlosewicz,A. W. Giulitin###
(704491, 704491)
Resistivity memory effect in La(1-x)Sr(x)MnO(3).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 20, 'times', 2]

Ca
###Resistivity memory effect in La(1-x)Sr(x)MnO(3)|E. P. Khlybov,R. A. Sadykov,I. J. Kostyleva,W. I. Nizhankovskij,A. J. Zaleski,D. Wlosewicz,A. W. Giulitin###
(704520, 704520)
 During the study of magnetoresistivity in La(1-x)Ca(x)MnO(3) it was foundthat after cycling of the magnetic field, some kind of magnetic field memoryeffect was observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 20, 'times', 1]

La0.5Ca0.5MnO3
###Resistivity memory effect in La(1-x)Sr(x)MnO(3)|E. P. Khlybov,R. A. Sadykov,I. J. Kostyleva,W. I. Nizhankovskij,A. J. Zaleski,D. Wlosewicz,A. W. Giulitin###
(704574, 704580)
 For La0.5Ca0.5MnO3 after cycling of the magnetic field to13T<missing VAR> and back to zero, frozen magnetoresistivity decreases about 20 timescomparing to zero field value, while for La(0.47)Ca(0.53)MnO(3) it is alreadyabout four orders of magnitude.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 20, 'times', 0]

In
###Resistivity memory effect in La(1-x)Sr(x)MnO(3)|E. P. Khlybov,R. A. Sadykov,I. J. Kostyleva,W. I. Nizhankovskij,A. J. Zaleski,D. Wlosewicz,A. W. Giulitin###
(704696, 704696)
 In zero magnetic field, temperaturedependence of resistivity ro(T) shows semiconducting-like behavior, while aftermagnetic field cycling it becomes metal-like.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 20, 'times', 2]

In
###Resistivity memory effect in La(1-x)Sr(x)MnO(3)|E. P. Khlybov,R. A. Sadykov,I. J. Kostyleva,W. I. Nizhankovskij,A. J. Zaleski,D. Wlosewicz,A. W. Giulitin###
(704806, 704806)
 In zero magneticfield material consists of antiferromagnetic matrix (insulating phase) andcoexisting ferromagnetic, conducting phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[190.0, 20, 'times', 5]

Mg
###Magnetoresistance, specific heat and magnetocaloric effect of equiatomic rare-earth transition-metal magnesium compounds|H. Hartmann,K. Berggold,S. Jodlauk,I. Klassen,K. Kordonis,T. Fickenscher,R. Poettgen,A. Freimuth,T. Lorenz###
(704987, 704987)
 We present a study of the magnetoresistance, the specific heat and themagnetocaloric effect of equiatomic RETMg intermetallics with RE  rmLa, Eu, Gd, Yb and T<missing VAR>  rm Ag, Au and of GdAuIn.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 13, 'to', 1],[104.0, 81, 'K', 1],[128.0, 3, 'orders', 2],[335.0, 125, 'K', 6],[357.0, 39, 'K', 6]

La
###Magnetoresistance, specific heat and magnetocaloric effect of equiatomic rare-earth transition-metal magnesium compounds|H. Hartmann,K. Berggold,S. Jodlauk,I. Klassen,K. Kordonis,T. Fickenscher,R. Poettgen,A. Freimuth,T. Lorenz###
(705000, 705000)
 We present a study of the magnetoresistance, the specific heat and themagnetocaloric effect of equiatomic RETMg intermetallics with RE  rmLa, Eu, Gd, Yb and T<missing VAR>  rm Ag, Au and of GdAuIn.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 13, 'to', 1],[91.0, 81, 'K', 1],[115.0, 3, 'orders', 2],[322.0, 125, 'K', 6],[344.0, 39, 'K', 6]

Eu
###Magnetoresistance, specific heat and magnetocaloric effect of equiatomic rare-earth transition-metal magnesium compounds|H. Hartmann,K. Berggold,S. Jodlauk,I. Klassen,K. Kordonis,T. Fickenscher,R. Poettgen,A. Freimuth,T. Lorenz###
(705003, 705003)
 We present a study of the magnetoresistance, the specific heat and themagnetocaloric effect of equiatomic RETMg intermetallics with RE  rmLa, Eu, Gd, Yb and T<missing VAR>  rm Ag, Au and of GdAuIn.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 13, 'to', 1],[88.0, 81, 'K', 1],[112.0, 3, 'orders', 2],[319.0, 125, 'K', 6],[341.0, 39, 'K', 6]

Gd
###Magnetoresistance, specific heat and magnetocaloric effect of equiatomic rare-earth transition-metal magnesium compounds|H. Hartmann,K. Berggold,S. Jodlauk,I. Klassen,K. Kordonis,T. Fickenscher,R. Poettgen,A. Freimuth,T. Lorenz###
(705006, 705006)
 We present a study of the magnetoresistance, the specific heat and themagnetocaloric effect of equiatomic RETMg intermetallics with RE  rmLa, Eu, Gd, Yb and T<missing VAR>  rm Ag, Au and of GdAuIn.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 13, 'to', 1],[85.0, 81, 'K', 1],[109.0, 3, 'orders', 2],[316.0, 125, 'K', 6],[338.0, 39, 'K', 6]

Yb
###Magnetoresistance, specific heat and magnetocaloric effect of equiatomic rare-earth transition-metal magnesium compounds|H. Hartmann,K. Berggold,S. Jodlauk,I. Klassen,K. Kordonis,T. Fickenscher,R. Poettgen,A. Freimuth,T. Lorenz###
(705009, 705009)
 We present a study of the magnetoresistance, the specific heat and themagnetocaloric effect of equiatomic RETMg intermetallics with RE  rmLa, Eu, Gd, Yb and T<missing VAR>  rm Ag, Au and of GdAuIn.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 13, 'to', 1],[82.0, 81, 'K', 1],[106.0, 3, 'orders', 2],[313.0, 125, 'K', 6],[335.0, 39, 'K', 6]

Ag
###Magnetoresistance, specific heat and magnetocaloric effect of equiatomic rare-earth transition-metal magnesium compounds|H. Hartmann,K. Berggold,S. Jodlauk,I. Klassen,K. Kordonis,T. Fickenscher,R. Poettgen,A. Freimuth,T. Lorenz###
(705018, 705018)
 We present a study of the magnetoresistance, the specific heat and themagnetocaloric effect of equiatomic RETMg intermetallics with RE  rmLa, Eu, Gd, Yb and T<missing VAR>  rm Ag, Au and of GdAuIn.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 13, 'to', 1],[73.0, 81, 'K', 1],[97.0, 3, 'orders', 2],[304.0, 125, 'K', 6],[326.0, 39, 'K', 6]

Au
###Magnetoresistance, specific heat and magnetocaloric effect of equiatomic rare-earth transition-metal magnesium compounds|H. Hartmann,K. Berggold,S. Jodlauk,I. Klassen,K. Kordonis,T. Fickenscher,R. Poettgen,A. Freimuth,T. Lorenz###
(705021, 705021)
 We present a study of the magnetoresistance, the specific heat and themagnetocaloric effect of equiatomic RETMg intermetallics with RE  rmLa, Eu, Gd, Yb and T<missing VAR>  rm Ag, Au and of GdAuIn.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 13, 'to', 1],[70.0, 81, 'K', 1],[94.0, 3, 'orders', 2],[301.0, 125, 'K', 6],[323.0, 39, 'K', 6]

GdAuIn
###Magnetoresistance, specific heat and magnetocaloric effect of equiatomic rare-earth transition-metal magnesium compounds|H. Hartmann,K. Berggold,S. Jodlauk,I. Klassen,K. Kordonis,T. Fickenscher,R. Poettgen,A. Freimuth,T. Lorenz###
(705027, 705029)
 We present a study of the magnetoresistance, the specific heat and themagnetocaloric effect of equiatomic RETMg intermetallics with RE  rmLa, Eu, Gd, Yb and T<missing VAR>  rm Ag, Au and of GdAuIn.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 13, 'to', 1],[62.0, 81, 'K', 1],[86.0, 3, 'orders', 2],[293.0, 125, 'K', 6],[315.0, 39, 'K', 6]

La
###Magnetoresistance, specific heat and magnetocaloric effect of equiatomic rare-earth transition-metal magnesium compounds|H. Hartmann,K. Berggold,S. Jodlauk,I. Klassen,K. Kordonis,T. Fickenscher,R. Poettgen,A. Freimuth,T. Lorenz###
(705056, 705056)
 Depending on thecomposition these compounds are paramagnetic (RE  rm La, Yb) or theyorder either ferro- or antiferromagnetically with transition temperaturesranging from about 13 to 81 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 13, 'to', 0],[35.0, 81, 'K', 0],[59.0, 3, 'orders', 1],[266.0, 125, 'K', 5],[288.0, 39, 'K', 5]

Yb
###Magnetoresistance, specific heat and magnetocaloric effect of equiatomic rare-earth transition-metal magnesium compounds|H. Hartmann,K. Berggold,S. Jodlauk,I. Klassen,K. Kordonis,T. Fickenscher,R. Poettgen,A. Freimuth,T. Lorenz###
(705059, 705059)
 Depending on thecomposition these compounds are paramagnetic (RE  rm La, Yb) or theyorder either ferro- or antiferromagnetically with transition temperaturesranging from about 13 to 81 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 13, 'to', 0],[32.0, 81, 'K', 0],[56.0, 3, 'orders', 1],[263.0, 125, 'K', 5],[285.0, 39, 'K', 5]

S7
###Magnetoresistance, specific heat and magnetocaloric effect of equiatomic rare-earth transition-metal magnesium compounds|H. Hartmann,K. Berggold,S. Jodlauk,I. Klassen,K. Kordonis,T. Fickenscher,R. Poettgen,A. Freimuth,T. Lorenz###
(705241, 705242)
 An analysis of the entropy change leads to theconclusions that generally the magnetic transition can be described by anordering of localized S7/2 moments arising from the half-filled 4f<missing VAR>7shells of Eu2 or Gd3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 13, 'to', 4],[150.0, 81, 'K', 4],[126.0, 3, 'orders', 3],[80.0, 125, 'K', 1],[102.0, 39, 'K', 1]

Eu2
###Magnetoresistance, specific heat and magnetocaloric effect of equiatomic rare-earth transition-metal magnesium compounds|H. Hartmann,K. Berggold,S. Jodlauk,I. Klassen,K. Kordonis,T. Fickenscher,R. Poettgen,A. Freimuth,T. Lorenz###
(705267, 705268)
 An analysis of the entropy change leads to theconclusions that generally the magnetic transition can be described by anordering of localized S7/2 moments arising from the half-filled 4f<missing VAR>7shells of Eu2 or Gd3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[177.0, 13, 'to', 4],[176.0, 81, 'K', 4],[152.0, 3, 'orders', 3],[54.0, 125, 'K', 1],[76.0, 39, 'K', 1]

Gd3
###Magnetoresistance, specific heat and magnetocaloric effect of equiatomic rare-earth transition-metal magnesium compounds|H. Hartmann,K. Berggold,S. Jodlauk,I. Klassen,K. Kordonis,T. Fickenscher,R. Poettgen,A. Freimuth,T. Lorenz###
(705272, 705273)
 An analysis of the entropy change leads to theconclusions that generally the magnetic transition can be described by anordering of localized S7/2 moments arising from the half-filled 4f<missing VAR>7shells of Eu2 or Gd3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[182.0, 13, 'to', 4],[181.0, 81, 'K', 4],[157.0, 3, 'orders', 3],[49.0, 125, 'K', 1],[71.0, 39, 'K', 1]

GdAgMg
###Magnetoresistance, specific heat and magnetocaloric effect of equiatomic rare-earth transition-metal magnesium compounds|H. Hartmann,K. Berggold,S. Jodlauk,I. Klassen,K. Kordonis,T. Fickenscher,R. Poettgen,A. Freimuth,T. Lorenz###
(705281, 705283)
 However, for GdAgMg we find clear evidencefor two phase transitions indicating that the magnetic ordering sets inpartially below about 125 K and is completed via an almost first-ordertransition at 39 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[191.0, 13, 'to', 5],[190.0, 81, 'K', 5],[166.0, 3, 'orders', 4],[39.0, 125, 'K', 0],[61.0, 39, 'K', 0]

OK
###Domain imaging, MOKE and magnetoresistance studies of CoFeB films for MRAM applications|J. M. Teixeira,R. F. A. Silva,J. Ventura,A. M. Pereira,F. Carpinteiro,J. P. Araujo,J. B. Sousa,S. Cardoso,R. Ferreira,P. P. Freitas###
(705412, 705413)
Domain imaging, M<missing VAR>OKE<missing VAR> and magnetoresistance studies of CoFeB films for MRAM<missing VAR> applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 20, 'nm', 1],[470.0, 2, 'down', 7],[475.0, 0.5, 'kAm', 7]

CoFeB
###Domain imaging, MOKE and magnetoresistance studies of CoFeB films for MRAM applications|J. M. Teixeira,R. F. A. Silva,J. Ventura,A. M. Pereira,F. Carpinteiro,J. P. Araujo,J. B. Sousa,S. Cardoso,R. Ferreira,P. P. Freitas###
(705424, 705426)
Domain imaging, M<missing VAR>OKE<missing VAR> and magnetoresistance studies of CoFeB films for MRAM<missing VAR> applications.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 20, 'nm', 1],[457.0, 2, 'down', 7],[462.0, 0.5, 'kAm', 7]

OK
###Domain imaging, MOKE and magnetoresistance studies of CoFeB films for MRAM applications|J. M. Teixeira,R. F. A. Silva,J. Ventura,A. M. Pereira,F. Carpinteiro,J. P. Araujo,J. B. Sousa,S. Cardoso,R. Ferreira,P. P. Freitas###
(705466, 705467)
 We present a detailed study on domain imaging, Kerr effect magnetometry(M<missing VAR>OKE) and magnetoresistance (MR), for a series of 20 nmCo73.8Fe16.2B10 thin films, both as-deposited (amorphous) andannealed (crystalline).
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 20, 'nm', 0],[416.0, 2, 'down', 6],[421.0, 0.5, 'kAm', 6]

Co73.8Fe16.2B10
###Domain imaging, MOKE and magnetoresistance studies of CoFeB films for MRAM applications|J. M. Teixeira,R. F. A. Silva,J. Ventura,A. M. Pereira,F. Carpinteiro,J. P. Araujo,J. B. Sousa,S. Cardoso,R. Ferreira,P. P. Freitas###
(705491, 705496)
 We present a detailed study on domain imaging, Kerr effect magnetometry(M<missing VAR>OKE) and magnetoresistance (MR), for a series of 20 nmCo73.8Fe16.2B10 thin films, both as-deposited (amorphous) andannealed (crystalline).
Featurization terminated normally.
0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.162,0.738,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 20, 'nm', 0],[387.0, 2, 'down', 6],[392.0, 0.5, 'kAm', 6]

OK
###Domain imaging, MOKE and magnetoresistance studies of CoFeB films for MRAM applications|J. M. Teixeira,R. F. A. Silva,J. Ventura,A. M. Pereira,F. Carpinteiro,J. P. Araujo,J. B. Sousa,S. Cardoso,R. Ferreira,P. P. Freitas###
(705552, 705553)
 By considering the two different (orthogonal) in-planemagnetization components, obtained by M<missing VAR>OKE<missing VAR> measurements, we were able to studythe uniaxial anisotropy induced during CoFeB-deposition and to discriminate themagnetization processes under a magnetic field parallel and perpendicular tosuch axis.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 20, 'nm', 1],[330.0, 2, 'down', 5],[335.0, 0.5, 'kAm', 5]

CoFeB
###Domain imaging, MOKE and magnetoresistance studies of CoFeB films for MRAM applications|J. M. Teixeira,R. F. A. Silva,J. Ventura,A. M. Pereira,F. Carpinteiro,J. P. Araujo,J. B. Sousa,S. Cardoso,R. Ferreira,P. P. Freitas###
(705580, 705582)
 By considering the two different (orthogonal) in-planemagnetization components, obtained by M<missing VAR>OKE<missing VAR> measurements, we were able to studythe uniaxial anisotropy induced during CoFeB-deposition and to discriminate themagnetization processes under a magnetic field parallel and perpendicular tosuch axis.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 20, 'nm', 1],[301.0, 2, 'down', 5],[306.0, 0.5, 'kAm', 5]

OK
###Domain imaging, MOKE and magnetoresistance studies of CoFeB films for MRAM applications|J. M. Teixeira,R. F. A. Silva,J. Ventura,A. M. Pereira,F. Carpinteiro,J. P. Araujo,J. B. Sousa,S. Cardoso,R. Ferreira,P. P. Freitas###
(705622, 705623)
 M<missing VAR>OKE<missing VAR> magnetic imaging enabled us to observe the dominantmagnetization processes, namely domain wall motion and moment rotation.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 20, 'nm', 2],[260.0, 2, 'down', 4],[265.0, 0.5, 'kAm', 4]

S
###Domain imaging, MOKE and magnetoresistance studies of CoFeB films for MRAM applications|J. M. Teixeira,R. F. A. Silva,J. Ventura,A. M. Pereira,F. Carpinteiro,J. P. Araujo,J. B. Sousa,S. Cardoso,R. Ferreira,P. P. Freitas###
(705736, 705736)
 Theseprocesses were correlated with the behavior of the magnetoresistance, whichdepends both on short-range spin disorder electron scattering and on the anglebetween the electrical current and the spontaneous magnetization(emphtextbfM<missing VAR>S).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[248.0, 20, 'nm', 3],[147.0, 2, 'down', 3],[152.0, 0.5, 'kAm', 3]

Co73.8Fe16.2B10
###Domain imaging, MOKE and magnetoresistance studies of CoFeB films for MRAM applications|J. M. Teixeira,R. F. A. Silva,J. Ventura,A. M. Pereira,F. Carpinteiro,J. P. Araujo,J. B. Sousa,S. Cardoso,R. Ferreira,P. P. Freitas###
(705798, 705803)
 A comparison between the results inCo73.8Fe16.2B10 films and the previous ones obtained in annealedCo80Fe20 films, show that the introduction of boron in CoFe reducessignificatively the coercive and saturation fields along the easy axis (e.g.
Featurization terminated normally.
0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.162,0.738,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[310.0, 20, 'nm', 5],[80.0, 2, 'down', 1],[85.0, 0.5, 'kAm', 1]

Co80Fe20
###Domain imaging, MOKE and magnetoresistance studies of CoFeB films for MRAM applications|J. M. Teixeira,R. F. A. Silva,J. Ventura,A. M. Pereira,F. Carpinteiro,J. P. Araujo,J. B. Sousa,S. Cardoso,R. Ferreira,P. P. Freitas###
(705822, 705825)
 A comparison between the results inCo73.8Fe16.2B10 films and the previous ones obtained in annealedCo80Fe20 films, show that the introduction of boron in CoFe reducessignificatively the coercive and saturation fields along the easy axis (e.g.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[334.0, 20, 'nm', 5],[58.0, 2, 'down', 1],[63.0, 0.5, 'kAm', 1]

CoFe
###Domain imaging, MOKE and magnetoresistance studies of CoFeB films for MRAM applications|J. M. Teixeira,R. F. A. Silva,J. Ventura,A. M. Pereira,F. Carpinteiro,J. P. Araujo,J. B. Sousa,S. Cardoso,R. Ferreira,P. P. Freitas###
(705844, 705845)
 A comparison between the results inCo73.8Fe16.2B10 films and the previous ones obtained in annealedCo80Fe20 films, show that the introduction of boron in CoFe reducessignificatively the coercive and saturation fields along the easy axis (e.g.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[356.0, 20, 'nm', 5],[38.0, 2, 'down', 1],[43.0, 0.5, 'kAm', 1]

H
###Domain imaging, MOKE and magnetoresistance studies of CoFeB films for MRAM applications|J. M. Teixeira,R. F. A. Silva,J. Ventura,A. M. Pereira,F. Carpinteiro,J. P. Araujo,J. B. Sousa,S. Cardoso,R. Ferreira,P. P. Freitas###
(705877, 705877)
Hc<missing VAR> from sim 2 down to sim 0.5 kAm-1).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[389.0, 20, 'nm', 6],[6.0, 2, 'down', 0],[11.0, 0.5, 'kAm', 0]

CoFeB
###Domain imaging, MOKE and magnetoresistance studies of CoFeB films for MRAM applications|J. M. Teixeira,R. F. A. Silva,J. Ventura,A. M. Pereira,F. Carpinteiro,J. P. Araujo,J. B. Sousa,S. Cardoso,R. Ferreira,P. P. Freitas###
(705932, 705934)
 We conclude that amorphous andnanocrystalline CoFeB films show low coercive fields and abrupt switching, aswell as absence of short range spin disorder effects after switching whencompared with Co80Fe20.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[444.0, 20, 'nm', 8],[49.0, 2, 'down', 2],[44.0, 0.5, 'kAm', 2]

Co80Fe20
###Domain imaging, MOKE and magnetoresistance studies of CoFeB films for MRAM applications|J. M. Teixeira,R. F. A. Silva,J. Ventura,A. M. Pereira,F. Carpinteiro,J. P. Araujo,J. B. Sousa,S. Cardoso,R. Ferreira,P. P. Freitas###
(705985, 705988)
 We conclude that amorphous andnanocrystalline CoFeB films show low coercive fields and abrupt switching, aswell as absence of short range spin disorder effects after switching whencompared with Co80Fe20.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[497.0, 20, 'nm', 8],[102.0, 2, 'down', 2],[97.0, 0.5, 'kAm', 2]

I
###M-I Transition in a-Conducting Carbon Films Induced by Boron Doping|P. N. Vishwakarma,S. V. Subramanyam###
(706001, 706001)
M<missing VAR>-I Transition in a-Conducting Carbon Films Induced by Boron Doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[273.0, 1.3, 'K', 6],[276.0, 300, 'K', 6],[318.0, 55, 'K', 7]

B
###M-I Transition in a-Conducting Carbon Films Induced by Boron Doping|P. N. Vishwakarma,S. V. Subramanyam###
(706124, 706124)
 X<missing VAR>-ray diffractionmeasurements show that the d<missing VAR> value of the carbon depends both on atomicpercentage of B in the carbon network and also on the preparation temperature.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 1.3, 'K', 3],[153.0, 300, 'K', 3],[195.0, 55, 'K', 4]

S
###M-I Transition in a-Conducting Carbon Films Induced by Boron Doping|P. N. Vishwakarma,S. V. Subramanyam###
(706308, 706308)
 Also the films in the insulatingregime show a crossover from Mott to E<missing VAR>S VR<missing VAR>H for T<missing VAR> < 55K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 1.3, 'K', 1],[31.0, 300, 'K', 1],[11.0, 55, 'K', 0]

V
###M-I Transition in a-Conducting Carbon Films Induced by Boron Doping|P. N. Vishwakarma,S. V. Subramanyam###
(706310, 706310)
 Also the films in the insulatingregime show a crossover from Mott to E<missing VAR>S VR<missing VAR>H for T<missing VAR> < 55K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 1.3, 'K', 1],[33.0, 300, 'K', 1],[9.0, 55, 'K', 0]

H
###M-I Transition in a-Conducting Carbon Films Induced by Boron Doping|P. N. Vishwakarma,S. V. Subramanyam###
(706312, 706312)
 Also the films in the insulatingregime show a crossover from Mott to E<missing VAR>S VR<missing VAR>H for T<missing VAR> < 55K.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 1.3, 'K', 1],[35.0, 300, 'K', 1],[7.0, 55, 'K', 0]

V
###M-I Transition in a-Conducting Carbon Films Induced by Boron Doping|P. N. Vishwakarma,S. V. Subramanyam###
(706345, 706345)
 Additional support tothis transition is evident from negative magnetoresistance in VR<missing VAR>H regime whenthe sample is deep inside the insulating side of M<missing VAR>I transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 1.3, 'K', 2],[68.0, 300, 'K', 2],[26.0, 55, 'K', 1]

H
###M-I Transition in a-Conducting Carbon Films Induced by Boron Doping|P. N. Vishwakarma,S. V. Subramanyam###
(706347, 706347)
 Additional support tothis transition is evident from negative magnetoresistance in VR<missing VAR>H regime whenthe sample is deep inside the insulating side of M<missing VAR>I transition.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 1.3, 'K', 2],[70.0, 300, 'K', 2],[28.0, 55, 'K', 1]

I
###M-I Transition in a-Conducting Carbon Films Induced by Boron Doping|P. N. Vishwakarma,S. V. Subramanyam###
(706373, 706373)
 Additional support tothis transition is evident from negative magnetoresistance in VR<missing VAR>H regime whenthe sample is deep inside the insulating side of M<missing VAR>I transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 1.3, 'K', 2],[96.0, 300, 'K', 2],[54.0, 55, 'K', 1]

La
###Magnetic Inhomogeneity and Magnetotransport in Electron-Doped Ca(1-x)La(x)MnO(3) (0<=x<=0.10)|C. Chiorescu,J. J. Neumeier,J. L. Cohn###
(706596, 706596)
Magnetic Inhomogeneity and Magnetotransport in Electron-Doped Ca(1-x)La(x)MnO(3) (0<x<missing VAR><0.10).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 0, '<', 0],[89.0, 0, '<', 1],[116.0, 61, ',', 3],[143.0, 68, ',', 5]

La
###Magnetic Inhomogeneity and Magnetotransport in Electron-Doped Ca(1-x)La(x)MnO(3) (0<=x<=0.10)|C. Chiorescu,J. J. Neumeier,J. L. Cohn###
(706674, 706674)
 The dc magnetization (M) and electrical resistivity (rho) as functions ofmagnetic field and temperature are reported for a series of lightly electrondopedCa(1-x)La(x)MnO(3) (0<x<missing VAR><0.10) specimens for which magnetization [Phys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 0, '<', 1],[11.0, 0, '<', 0],[38.0, 61, ',', 2],[65.0, 68, ',', 4]

B
###Magnetic Inhomogeneity and Magnetotransport in Electron-Doped Ca(1-x)La(x)MnO(3) (0<=x<=0.10)|C. Chiorescu,J. J. Neumeier,J. L. Cohn###
(706708, 706708)
 B bf 61, 14319 (2000)] and scattering studies [Phys.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 0, '<', 3],[23.0, 0, '<', 2],[4.0, 61, ',', 0],[31.0, 68, ',', 2]

B
###Magnetic Inhomogeneity and Magnetotransport in Electron-Doped Ca(1-x)La(x)MnO(3) (0<=x<=0.10)|C. Chiorescu,J. J. Neumeier,J. L. Cohn###
(706735, 706735)
 B bf 68,134440 (2003)] indicate an inhomogeneous magnetic ground state composed offerromagnetic (FM) droplets embedded in a G<missing VAR>-type antiferromagnetic matrix.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 0, '<', 5],[50.0, 0, '<', 4],[23.0, 61, ',', 2],[4.0, 68, ',', 0]

F
###Magnetic Inhomogeneity and Magnetotransport in Electron-Doped Ca(1-x)La(x)MnO(3) (0<=x<=0.10)|C. Chiorescu,J. J. Neumeier,J. L. Cohn###
(706770, 706770)
 B bf 68,134440 (2003)] indicate an inhomogeneous magnetic ground state composed offerromagnetic (FM) droplets embedded in a G<missing VAR>-type antiferromagnetic matrix.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 0, '<', 5],[85.0, 0, '<', 4],[58.0, 61, ',', 2],[31.0, 68, ',', 0]

In
###Magnetic Inhomogeneity and Magnetotransport in Electron-Doped Ca(1-x)La(x)MnO(3) (0<=x<=0.10)|C. Chiorescu,J. J. Neumeier,J. L. Cohn###
(706906, 706906)
 In the paramagnetic phase (T<missing VAR>>125 K) we find amagnetoresistance -C(M/MS)2 (M<missing VAR>S is the low-T<missing VAR> saturation magnetization), asobserved in many manganites in the ferromagnetic (FM), colossalmagnetoresistance (CMR) region of the phase diagram, but with a value of C thatis two orders of magnitude smaller than observed for CMR materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[299.0, 0, '<', 8],[221.0, 0, '<', 7],[194.0, 61, ',', 5],[167.0, 68, ',', 3]

K
###Magnetic Inhomogeneity and Magnetotransport in Electron-Doped Ca(1-x)La(x)MnO(3) (0<=x<=0.10)|C. Chiorescu,J. J. Neumeier,J. L. Cohn###
(706919, 706919)
 In the paramagnetic phase (T<missing VAR>>125 K) we find amagnetoresistance -C(M/MS)2 (M<missing VAR>S is the low-T<missing VAR> saturation magnetization), asobserved in many manganites in the ferromagnetic (FM), colossalmagnetoresistance (CMR) region of the phase diagram, but with a value of C thatis two orders of magnitude smaller than observed for CMR materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[312.0, 0, '<', 8],[234.0, 0, '<', 7],[207.0, 61, ',', 5],[180.0, 68, ',', 3]

C
###Magnetic Inhomogeneity and Magnetotransport in Electron-Doped Ca(1-x)La(x)MnO(3) (0<=x<=0.10)|C. Chiorescu,J. J. Neumeier,J. L. Cohn###
(706932, 706932)
 In the paramagnetic phase (T<missing VAR>>125 K) we find amagnetoresistance -C(M/MS)2 (M<missing VAR>S is the low-T<missing VAR> saturation magnetization), asobserved in many manganites in the ferromagnetic (FM), colossalmagnetoresistance (CMR) region of the phase diagram, but with a value of C thatis two orders of magnitude smaller than observed for CMR materials.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[325.0, 0, '<', 8],[247.0, 0, '<', 7],[220.0, 61, ',', 5],[193.0, 68, ',', 3]

S
###Magnetic Inhomogeneity and Magnetotransport in Electron-Doped Ca(1-x)La(x)MnO(3) (0<=x<=0.10)|C. Chiorescu,J. J. Neumeier,J. L. Cohn###
(706937, 706937)
 In the paramagnetic phase (T<missing VAR>>125 K) we find amagnetoresistance -C(M/MS)2 (M<missing VAR>S is the low-T<missing VAR> saturation magnetization), asobserved in many manganites in the ferromagnetic (FM), colossalmagnetoresistance (CMR) region of the phase diagram, but with a value of C thatis two orders of magnitude smaller than observed for CMR materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[330.0, 0, '<', 8],[252.0, 0, '<', 7],[225.0, 61, ',', 5],[198.0, 68, ',', 3]

S
###Magnetic Inhomogeneity and Magnetotransport in Electron-Doped Ca(1-x)La(x)MnO(3) (0<=x<=0.10)|C. Chiorescu,J. J. Neumeier,J. L. Cohn###
(706943, 706943)
 In the paramagnetic phase (T<missing VAR>>125 K) we find amagnetoresistance -C(M/MS)2 (M<missing VAR>S is the low-T<missing VAR> saturation magnetization), asobserved in many manganites in the ferromagnetic (FM), colossalmagnetoresistance (CMR) region of the phase diagram, but with a value of C thatis two orders of magnitude smaller than observed for CMR materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[336.0, 0, '<', 8],[258.0, 0, '<', 7],[231.0, 61, ',', 5],[204.0, 68, ',', 3]

F
###Magnetic Inhomogeneity and Magnetotransport in Electron-Doped Ca(1-x)La(x)MnO(3) (0<=x<=0.10)|C. Chiorescu,J. J. Neumeier,J. L. Cohn###
(706977, 706977)
 In the paramagnetic phase (T<missing VAR>>125 K) we find amagnetoresistance -C(M/MS)2 (M<missing VAR>S is the low-T<missing VAR> saturation magnetization), asobserved in many manganites in the ferromagnetic (FM), colossalmagnetoresistance (CMR) region of the phase diagram, but with a value of C thatis two orders of magnitude smaller than observed for CMR materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[370.0, 0, '<', 8],[292.0, 0, '<', 7],[265.0, 61, ',', 5],[238.0, 68, ',', 3]

C
###Magnetic Inhomogeneity and Magnetotransport in Electron-Doped Ca(1-x)La(x)MnO(3) (0<=x<=0.10)|C. Chiorescu,J. J. Neumeier,J. L. Cohn###
(706988, 706988)
 In the paramagnetic phase (T<missing VAR>>125 K) we find amagnetoresistance -C(M/MS)2 (M<missing VAR>S is the low-T<missing VAR> saturation magnetization), asobserved in many manganites in the ferromagnetic (FM), colossalmagnetoresistance (CMR) region of the phase diagram, but with a value of C thatis two orders of magnitude smaller than observed for CMR materials.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[381.0, 0, '<', 8],[303.0, 0, '<', 7],[276.0, 61, ',', 5],[249.0, 68, ',', 3]

C
###Magnetic Inhomogeneity and Magnetotransport in Electron-Doped Ca(1-x)La(x)MnO(3) (0<=x<=0.10)|C. Chiorescu,J. J. Neumeier,J. L. Cohn###
(707014, 707014)
 In the paramagnetic phase (T<missing VAR>>125 K) we find amagnetoresistance -C(M/MS)2 (M<missing VAR>S is the low-T<missing VAR> saturation magnetization), asobserved in many manganites in the ferromagnetic (FM), colossalmagnetoresistance (CMR) region of the phase diagram, but with a value of C thatis two orders of magnitude smaller than observed for CMR materials.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[407.0, 0, '<', 8],[329.0, 0, '<', 7],[302.0, 61, ',', 5],[275.0, 68, ',', 3]

C
###Magnetic Inhomogeneity and Magnetotransport in Electron-Doped Ca(1-x)La(x)MnO(3) (0<=x<=0.10)|C. Chiorescu,J. J. Neumeier,J. L. Cohn###
(707037, 707037)
 In the paramagnetic phase (T<missing VAR>>125 K) we find amagnetoresistance -C(M/MS)2 (M<missing VAR>S is the low-T<missing VAR> saturation magnetization), asobserved in many manganites in the ferromagnetic (FM), colossalmagnetoresistance (CMR) region of the phase diagram, but with a value of C thatis two orders of magnitude smaller than observed for CMR materials.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[430.0, 0, '<', 8],[352.0, 0, '<', 7],[325.0, 61, ',', 5],[298.0, 68, ',', 3]

C
###Magnetic Inhomogeneity and Magnetotransport in Electron-Doped Ca(1-x)La(x)MnO(3) (0<=x<=0.10)|C. Chiorescu,J. J. Neumeier,J. L. Cohn###
(707051, 707051)
 The dopingbehavior C(x) follows that of M<missing VAR>S(x), indicating that electronic inhomogeneityassociated with FM<missing VAR> fluctuations occurs well above the magnetic orderingtransition.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[444.0, 0, '<', 9],[366.0, 0, '<', 8],[339.0, 61, ',', 6],[312.0, 68, ',', 4]

S
###Magnetic Inhomogeneity and Magnetotransport in Electron-Doped Ca(1-x)La(x)MnO(3) (0<=x<=0.10)|C. Chiorescu,J. J. Neumeier,J. L. Cohn###
(707063, 707063)
 The dopingbehavior C(x) follows that of M<missing VAR>S(x), indicating that electronic inhomogeneityassociated with FM<missing VAR> fluctuations occurs well above the magnetic orderingtransition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[456.0, 0, '<', 9],[378.0, 0, '<', 8],[351.0, 61, ',', 6],[324.0, 68, ',', 4]

F
###Magnetic Inhomogeneity and Magnetotransport in Electron-Doped Ca(1-x)La(x)MnO(3) (0<=x<=0.10)|C. Chiorescu,J. J. Neumeier,J. L. Cohn###
(707082, 707082)
 The dopingbehavior C(x) follows that of M<missing VAR>S(x), indicating that electronic inhomogeneityassociated with FM<missing VAR> fluctuations occurs well above the magnetic orderingtransition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[475.0, 0, '<', 9],[397.0, 0, '<', 8],[370.0, 61, ',', 6],[343.0, 68, ',', 4]

La0.7Sr0.3MnO3
###Transformation of spin information into large electrical signals via carbon nanotubes|Luis E. Hueso,Jose M. Pruneda,Valeria Ferrari,Gavin Burnell,Jose P. Valdes-Herrera,Benjamin D. Simons,Peter B. Littlewood,Emilio Artacho,Albert Fert,Neil D. Mathur###
(707398, 707404)
 We overcome this long standing problem in spintronics bydemonstrating large magnetoresistance effects of 61% at 5 K in devices wherethe non-magnetic channel is a multiwall carbon nanotube that spans a 1.5 microngap between epitaxial electrodes of the highly spin polarized manganiteLa0.7Sr0.3MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 1, '%', 1],[60.0, 61, '%', 0],[56.0, 5, 'K', 0],[24.0, 1.5, 'micron', 0]

Pr1-x
###Magnetic field dependence of the magnetic phase separation in Pr1-xCaxMnO3 manganites studied by small-angle neutron scattering|Damien Saurel,Annie Brulet,Andre Heinemann,Christine Martin,Silvana Mercone,Charles Simon###
(707636, 707639)
Magnetic field dependence of the magnetic phase separation in Pr1-xCaxMnO3 manganites studied by small-angle neutron scattering.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

MnO3
###Magnetic field dependence of the magnetic phase separation in Pr1-xCaxMnO3 manganites studied by small-angle neutron scattering|Damien Saurel,Annie Brulet,Andre Heinemann,Christine Martin,Silvana Mercone,Charles Simon###
(707641, 707643)
Magnetic field dependence of the magnetic phase separation in Pr1-xCaxMnO3 manganites studied by small-angle neutron scattering.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Magnetic field dependence of the magnetic phase separation in Pr1-xCaxMnO3 manganites studied by small-angle neutron scattering|Damien Saurel,Annie Brulet,Andre Heinemann,Christine Martin,Silvana Mercone,Charles Simon###
(707682, 707682)
 Transport properties of manganese oxides suggest that their colossalmagnetoresistance (CMR) is due to percolation between ferromagnetic metallic(FM) clusters in an antiferromagnetic insulating (AFI) matrix.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Magnetic field dependence of the magnetic phase separation in Pr1-xCaxMnO3 manganites studied by small-angle neutron scattering|Damien Saurel,Annie Brulet,Andre Heinemann,Christine Martin,Silvana Mercone,Charles Simon###
(707703, 707703)
 Transport properties of manganese oxides suggest that their colossalmagnetoresistance (CMR) is due to percolation between ferromagnetic metallic(FM) clusters in an antiferromagnetic insulating (AFI) matrix.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Magnetic field dependence of the magnetic phase separation in Pr1-xCaxMnO3 manganites studied by small-angle neutron scattering|Damien Saurel,Annie Brulet,Andre Heinemann,Christine Martin,Silvana Mercone,Charles Simon###
(707720, 707720)
 Transport properties of manganese oxides suggest that their colossalmagnetoresistance (CMR) is due to percolation between ferromagnetic metallic(FM) clusters in an antiferromagnetic insulating (AFI) matrix.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Magnetic field dependence of the magnetic phase separation in Pr1-xCaxMnO3 manganites studied by small-angle neutron scattering|Damien Saurel,Annie Brulet,Andre Heinemann,Christine Martin,Silvana Mercone,Charles Simon###
(707751, 707751)
 We have studiedsmall-angle neutron scattering under applied magnetic field in CMR Pr1-xCaxMnO3crystals for x<missing VAR> around 0.33.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pr1-x
###Magnetic field dependence of the magnetic phase separation in Pr1-xCaxMnO3 manganites studied by small-angle neutron scattering|Damien Saurel,Annie Brulet,Andre Heinemann,Christine Martin,Silvana Mercone,Charles Simon###
(707755, 707758)
 We have studiedsmall-angle neutron scattering under applied magnetic field in CMR Pr1-xCaxMnO3crystals for x<missing VAR> around 0.33.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

MnO3
###Magnetic field dependence of the magnetic phase separation in Pr1-xCaxMnO3 manganites studied by small-angle neutron scattering|Damien Saurel,Annie Brulet,Andre Heinemann,Christine Martin,Silvana Mercone,Charles Simon###
(707760, 707762)
 We have studiedsmall-angle neutron scattering under applied magnetic field in CMR Pr1-xCaxMnO3crystals for x<missing VAR> around 0.33.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Magnetic field dependence of the magnetic phase separation in Pr1-xCaxMnO3 manganites studied by small-angle neutron scattering|Damien Saurel,Annie Brulet,Andre Heinemann,Christine Martin,Silvana Mercone,Charles Simon###
(707817, 707817)
 At the mesoscopic scale (200nm), the inhomogeneitiescorrespond to the percolation of the conducting ferromagnetic phase into theinsulating phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Magnetic field dependence of the magnetic phase separation in Pr1-xCaxMnO3 manganites studied by small-angle neutron scattering|Damien Saurel,Annie Brulet,Andre Heinemann,Christine Martin,Silvana Mercone,Charles Simon###
(707912, 707912)
 The other inhomogeneities are nanoscopic inside theantiferromagnetic phase (AFI), there exist small ferromagnetic clusters.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(FI)
###Magnetic field dependence of the magnetic phase separation in Pr1-xCaxMnO3 manganites studied by small-angle neutron scattering|Damien Saurel,Annie Brulet,Andre Heinemann,Christine Martin,Silvana Mercone,Charles Simon###
(707967, 707970)
 Insidethe ferromagnetic phase which exists in absence of magnetic field in somecompounds and is in fact insulating (FI), there also exist small nonferromagnetic objects.
Featurization successful!
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

No
###Magnetic field dependence of the magnetic phase separation in Pr1-xCaxMnO3 manganites studied by small-angle neutron scattering|Damien Saurel,Annie Brulet,Andre Heinemann,Christine Martin,Silvana Mercone,Charles Simon###
(707989, 707989)
 No evolution of this nanostructure is observed when themagnetic field is applied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0
Abstract does not contain any numbers.

F
###Colossal Magnetoresistance Observed in Monte Carlo Simulations of the One- and Two-Orbital Models for Manganites|C. Şen,G. Alvarez,H. Aliaga,E. Dagotto###
(708166, 708166)
 The one- and two-orbital double-exchange models for manganites are studiedusing Monte Carlo computational techniques in the presence of a robustelectron-phonon coupling (but neglecting the antiferromagnetic exchange J<missing VAR>rmAF between the localized spins).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.70
###Colossal Magnetoresistance Observed in Monte Carlo Simulations of the One- and Two-Orbital Models for Manganites|C. Şen,G. Alvarez,H. Aliaga,E. Dagotto###
(708534, 708535)
Overall, the magnitude and shape of the effects discussed here closely resembleexperiments for materials such as rm La0.70 Ca0.30 Mn O3, and theyare in qualitative agreement with the current predominant theoretical view thatcompetition between a metal and an insulator, enhanced by quenched disorder, iscrucial to understand the colossal magnetoresistance (CMR) phenomenon.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ca0.30
###Colossal Magnetoresistance Observed in Monte Carlo Simulations of the One- and Two-Orbital Models for Manganites|C. Şen,G. Alvarez,H. Aliaga,E. Dagotto###
(708537, 708538)
Overall, the magnitude and shape of the effects discussed here closely resembleexperiments for materials such as rm La0.70 Ca0.30 Mn O3, and theyare in qualitative agreement with the current predominant theoretical view thatcompetition between a metal and an insulator, enhanced by quenched disorder, iscrucial to understand the colossal magnetoresistance (CMR) phenomenon.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Colossal Magnetoresistance Observed in Monte Carlo Simulations of the One- and Two-Orbital Models for Manganites|C. Şen,G. Alvarez,H. Aliaga,E. Dagotto###
(708540, 708540)
Overall, the magnitude and shape of the effects discussed here closely resembleexperiments for materials such as rm La0.70 Ca0.30 Mn O3, and theyare in qualitative agreement with the current predominant theoretical view thatcompetition between a metal and an insulator, enhanced by quenched disorder, iscrucial to understand the colossal magnetoresistance (CMR) phenomenon.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O3
###Colossal Magnetoresistance Observed in Monte Carlo Simulations of the One- and Two-Orbital Models for Manganites|C. Şen,G. Alvarez,H. Aliaga,E. Dagotto###
(708542, 708543)
Overall, the magnitude and shape of the effects discussed here closely resembleexperiments for materials such as rm La0.70 Ca0.30 Mn O3, and theyare in qualitative agreement with the current predominant theoretical view thatcompetition between a metal and an insulator, enhanced by quenched disorder, iscrucial to understand the colossal magnetoresistance (CMR) phenomenon.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Colossal Magnetoresistance Observed in Monte Carlo Simulations of the One- and Two-Orbital Models for Manganites|C. Şen,G. Alvarez,H. Aliaga,E. Dagotto###
(708614, 708614)
Overall, the magnitude and shape of the effects discussed here closely resembleexperiments for materials such as rm La0.70 Ca0.30 Mn O3, and theyare in qualitative agreement with the current predominant theoretical view thatcompetition between a metal and an insulator, enhanced by quenched disorder, iscrucial to understand the colossal magnetoresistance (CMR) phenomenon.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CN
###Theoretical studies of spin-dependent electrical transport through carbon nanotbes|S. Krompiewski###
(708668, 708669)
 Spin-dependent coherent quantum transport through carbon nanotubes (CNT) isstudied theoretically within a tight-binding model and the Greens<missing VAR> functionpartitioning technique.
Featurization terminated normally.
0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 20, '%', 3]

CN
###Theoretical studies of spin-dependent electrical transport through carbon nanotbes|S. Krompiewski###
(708807, 708808)
 The former case shows that quite asubstantial giant magnetoresistance (GMR) effect occurs (pm 20%) fordisorder-free CNTs.
Featurization terminated normally.
0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 20, '%', 0]

At
###Theoretical studies of spin-dependent electrical transport through carbon nanotbes|S. Krompiewski###
(708863, 708863)
At parallel magnetic fields, characteristic Aharonov-Bohm-type oscillations arerevealed with pronounced features due to a combined effect oflength-to-perimeter ratio, unintentional electrode-induced doping, Zeemansplitting, and energy-level broadening.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 20, '%', 2]

In
###Theoretical studies of spin-dependent electrical transport through carbon nanotbes|S. Krompiewski###
(708939, 708939)
 In particular, a CNT<missing VAR> is predicted tolose its ability to serve as a magneto-electrical switch when its length andperimeter become comparable.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 20, '%', 3]

CN
###Theoretical studies of spin-dependent electrical transport through carbon nanotbes|S. Krompiewski###
(708946, 708947)
 In particular, a CNT<missing VAR> is predicted tolose its ability to serve as a magneto-electrical switch when its length andperimeter become comparable.
Featurization terminated normally.
0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 20, '%', 3]

In
###Theoretical studies of spin-dependent electrical transport through carbon nanotbes|S. Krompiewski###
(708993, 708993)
 In case of perpendicular geometry, there areconductance oscillations approaching asymptotically the upper theoretical limitto the conductance, 4 e<missing VAR>2/h<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[197.0, 20, '%', 4]

In
###Dipolar interaction effects in the magnetic and magnetotransport properties of ordered nanoparticle arrays|D. Kechrakos,K. N. Trohidou###
(709191, 709191)
 In ordered arrays of magnetic nanoparticles magnetostaticinterparticle interactions introduce collective dynamics acting competitivelyto random anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Dipolar interaction effects in the magnetic and magnetotransport properties of ordered nanoparticle arrays|D. Kechrakos,K. N. Trohidou###
(709623, 709623)
 Our numerical results are comparedto existing measurements on self-assembled arrays of Fe-based and Conanoparticles is made.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Dipolar interaction effects in the magnetic and magnetotransport properties of ordered nanoparticle arrays|D. Kechrakos,K. N. Trohidou###
(709629, 709629)
 Our numerical results are comparedto existing measurements on self-assembled arrays of Fe-based and Conanoparticles is made.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nd7Rh3
###An anomalous magnetic phase transition at 10 K in Nd7Rh3|Kausik Sengupta,E. V. Sampathkumaran###
(709662, 709665)
An anomalous magnetic phase transition at 10 K in Nd7Rh3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 10, 'K', 0],[63.0, 10, 'K', 1],[180.0, 300, 'K', 2],[208.0, 10, 'K', 3],[341.0, 10, 'K', 4],[357.0, 10, 'K', 5]

Nd7Rh3
###An anomalous magnetic phase transition at 10 K in Nd7Rh3|Kausik Sengupta,E. V. Sampathkumaran###
(709673, 709676)
 The compound, Nd7Rh3, crystallizing in Th7Fe3-type hexagonal structure, hasbeen shown recently by us to exhibit a signature of magnetic phase-coexistencephenomenon below 10 K after a field cycling, uncharacteristic of stoichiometricintermetallic compounds, bearing a relevance to the trends in the field ofelectronic phase-separation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 10, 'K', 1],[52.0, 10, 'K', 0],[169.0, 300, 'K', 1],[197.0, 10, 'K', 2],[330.0, 10, 'K', 3],[346.0, 10, 'K', 4]

Th7Fe3
###An anomalous magnetic phase transition at 10 K in Nd7Rh3|Kausik Sengupta,E. V. Sampathkumaran###
(709683, 709686)
 The compound, Nd7Rh3, crystallizing in Th7Fe3-type hexagonal structure, hasbeen shown recently by us to exhibit a signature of magnetic phase-coexistencephenomenon below 10 K after a field cycling, uncharacteristic of stoichiometricintermetallic compounds, bearing a relevance to the trends in the field ofelectronic phase-separation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 10, 'K', 1],[42.0, 10, 'K', 0],[159.0, 300, 'K', 1],[187.0, 10, 'K', 2],[320.0, 10, 'K', 3],[336.0, 10, 'K', 4]

In
###An anomalous magnetic phase transition at 10 K in Nd7Rh3|Kausik Sengupta,E. V. Sampathkumaran###
(709779, 709779)
 In order to characterize this compound further, wehave carried out dc magnetic susceptibility (chi), electrical resistivity,magnetoresistance and heat-capacity measurements as a function temperature (T<missing VAR>1.8 to 300 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 10, 'K', 2],[51.0, 10, 'K', 1],[66.0, 300, 'K', 0],[94.0, 10, 'K', 1],[227.0, 10, 'K', 2],[243.0, 10, 'K', 3]

In
###An anomalous magnetic phase transition at 10 K in Nd7Rh3|Kausik Sengupta,E. V. Sampathkumaran###
(709942, 709942)
 In addition, the sign ofmagnetoresistance is negative and the magnitude is large over a widetemperature range in the vicinity of magnetic ordering temperature, with asharp variation at 10 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[284.0, 10, 'K', 4],[214.0, 10, 'K', 3],[97.0, 300, 'K', 2],[69.0, 10, 'K', 1],[64.0, 10, 'K', 0],[80.0, 10, 'K', 1]

InMnAs
###Peculiarities of the transport properties of InMnAs layers, produced by the laser deposition, in strong magnetic fields|V. V. Rylkov,A. S. Lagutin,B. A. Aronzon,V. V. Podolskii,V. P. Lesnikov,M. Goiran,J. Galibert,B. Raquet,J. Leotin###
(710058, 710060)
Peculiarities of the transport properties of InMnAs layers, produced by the laser deposition, in strong magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 30, 'T', 1],[188.0, 40, 'K', 4],[230.0, 10, 'T', 5],[237.0, 4, 'K', 5],[272.0, 2, 'T', 5],[275.0, 30, 'K', 5],[305.0, 10, 'T', 6]

InMnAs
###Peculiarities of the transport properties of InMnAs layers, produced by the laser deposition, in strong magnetic fields|V. V. Rylkov,A. S. Lagutin,B. A. Aronzon,V. V. Podolskii,V. P. Lesnikov,M. Goiran,J. Galibert,B. Raquet,J. Leotin###
(710093, 710095)
 Magnetotransport properties of p<missing VAR>-InMnAs layers are studied in pulsed magneticfields up to 30 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 30, 'T', 0],[153.0, 40, 'K', 3],[195.0, 10, 'T', 4],[202.0, 4, 'K', 4],[237.0, 2, 'T', 4],[240.0, 30, 'K', 4],[270.0, 10, 'T', 5]

K
###Peculiarities of the transport properties of InMnAs layers, produced by the laser deposition, in strong magnetic fields|V. V. Rylkov,A. S. Lagutin,B. A. Aronzon,V. V. Podolskii,V. P. Lesnikov,M. Goiran,J. Galibert,B. Raquet,J. Leotin###
(710202, 710202)
 Surprisingly the anomalous Hall effectresistance in paramagnetic state (T<missing VAR>>40 K) and in strong magnetic fields (B > 20T) appears to be greater than that in ferromagnetic state (T<missing VAR> < 40 K), whilethe longitudinal resistance rises with the temperature decrease.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 30, 'T', 3],[46.0, 40, 'K', 0],[88.0, 10, 'T', 1],[95.0, 4, 'K', 1],[130.0, 2, 'T', 1],[133.0, 30, 'K', 1],[163.0, 10, 'T', 2]

B
###Peculiarities of the transport properties of InMnAs layers, produced by the laser deposition, in strong magnetic fields|V. V. Rylkov,A. S. Lagutin,B. A. Aronzon,V. V. Podolskii,V. P. Lesnikov,M. Goiran,J. Galibert,B. Raquet,J. Leotin###
(710216, 710216)
 Surprisingly the anomalous Hall effectresistance in paramagnetic state (T<missing VAR>>40 K) and in strong magnetic fields (B > 20T) appears to be greater than that in ferromagnetic state (T<missing VAR> < 40 K), whilethe longitudinal resistance rises with the temperature decrease.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 30, 'T', 3],[32.0, 40, 'K', 0],[74.0, 10, 'T', 1],[81.0, 4, 'K', 1],[116.0, 2, 'T', 1],[119.0, 30, 'K', 1],[149.0, 10, 'T', 2]

Mn
###Peculiarities of the transport properties of InMnAs layers, produced by the laser deposition, in strong magnetic fields|V. V. Rylkov,A. S. Lagutin,B. A. Aronzon,V. V. Podolskii,V. P. Lesnikov,M. Goiran,J. Galibert,B. Raquet,J. Leotin###
(710403, 710403)
 The obtained results are interpreted onthe base of the assumptions of the non-uniform distribution of Mn atoms actingas acceptors, the local ferromagnetic transition and the percolation-likecharacter of the film conductivity, which prevailed under conditions of thestrong fluctuations of the exchange interaction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[288.0, 30, 'T', 6],[155.0, 40, 'K', 3],[113.0, 10, 'T', 2],[106.0, 4, 'K', 2],[71.0, 2, 'T', 2],[68.0, 30, 'K', 2],[38.0, 10, 'T', 1]

In
###Peculiarities in the properties of some rare-earth compounds with orthorhombic structures|V. Lovchinov,A. Apostolov,D. Dimitrov,I. Radulov,Ph. Vanderbemden###
(711187, 711187)
 In this paper, we present our investigation on monocrystal samples with anorthorhombic structure, grown in two different space groups D2h(16) forLa0.78Pb0.22MnO3 and Pr0.7Sr0.3MnO3 and D2h(9) for HoMn2O5 and TbMn2O5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[199.0, 730, ';', 1],[201.0, 2, '<', 1]

La0.78Pb0.22MnO3
###Peculiarities in the properties of some rare-earth compounds with orthorhombic structures|V. Lovchinov,A. Apostolov,D. Dimitrov,I. Radulov,Ph. Vanderbemden###
(711240, 711246)
 In this paper, we present our investigation on monocrystal samples with anorthorhombic structure, grown in two different space groups D2h(16) forLa0.78Pb0.22MnO3 and Pr0.7Sr0.3MnO3 and D2h(9) for HoMn2O5 and TbMn2O5.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.156,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.044,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 730, ';', 1],[142.0, 2, '<', 1]

Pr0.7Sr0.3MnO3
###Peculiarities in the properties of some rare-earth compounds with orthorhombic structures|V. Lovchinov,A. Apostolov,D. Dimitrov,I. Radulov,Ph. Vanderbemden###
(711250, 711256)
 In this paper, we present our investigation on monocrystal samples with anorthorhombic structure, grown in two different space groups D2h(16) forLa0.78Pb0.22MnO3 and Pr0.7Sr0.3MnO3 and D2h(9) for HoMn2O5 and TbMn2O5.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 730, ';', 1],[132.0, 2, '<', 1]

HoMn2O5
###Peculiarities in the properties of some rare-earth compounds with orthorhombic structures|V. Lovchinov,A. Apostolov,D. Dimitrov,I. Radulov,Ph. Vanderbemden###
(711269, 711273)
 In this paper, we present our investigation on monocrystal samples with anorthorhombic structure, grown in two different space groups D2h(16) forLa0.78Pb0.22MnO3 and Pr0.7Sr0.3MnO3 and D2h(9) for HoMn2O5 and TbMn2O5.
Featurization terminated normally.
0,0,0,0,0,0,0,0.625,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 730, ';', 1],[115.0, 2, '<', 1]

TbMn2O5
###Peculiarities in the properties of some rare-earth compounds with orthorhombic structures|V. Lovchinov,A. Apostolov,D. Dimitrov,I. Radulov,Ph. Vanderbemden###
(711277, 711281)
 In this paper, we present our investigation on monocrystal samples with anorthorhombic structure, grown in two different space groups D2h(16) forLa0.78Pb0.22MnO3 and Pr0.7Sr0.3MnO3 and D2h(9) for HoMn2O5 and TbMn2O5.
Featurization terminated normally.
0,0,0,0,0,0,0,0.625,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 730, ';', 1],[107.0, 2, '<', 1]

MnO3
###Peculiarities in the properties of some rare-earth compounds with orthorhombic structures|V. Lovchinov,A. Apostolov,D. Dimitrov,I. Radulov,Ph. Vanderbemden###
(711300, 711302)
 Thedoped perovskite manganites Ln1-x<missing VAR> Ax MnO3 (where Ln is a rare-earth ion and Ais a divalent ion) from the group D2h(16), which crystallized in differentmodifications of the perovskite structure, characterized by the parameterdeformation of the type c<missing VAR>/730;2<b<missing VAR><a.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 730, ';', 0],[86.0, 2, '<', 0]

Co
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(711533, 711533)
Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 20, '%', 1],[148.0, 200, 'C', 1],[162.0, 112, '%', 1],[170.0, 350, 'C', 1],[278.0, 275, 'C', 2],[409.0, 350, 'C', 5],[475.0, 275, 'C', 6]

Fe
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(711535, 711535)
Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 20, '%', 1],[146.0, 200, 'C', 1],[160.0, 112, '%', 1],[168.0, 350, 'C', 1],[276.0, 275, 'C', 2],[407.0, 350, 'C', 5],[473.0, 275, 'C', 6]

B
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(711537, 711537)
Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 20, '%', 1],[144.0, 200, 'C', 1],[158.0, 112, '%', 1],[166.0, 350, 'C', 1],[274.0, 275, 'C', 2],[405.0, 350, 'C', 5],[471.0, 275, 'C', 6]

MgO
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(711541, 711542)
Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 20, '%', 1],[139.0, 200, 'C', 1],[153.0, 112, '%', 1],[161.0, 350, 'C', 1],[269.0, 275, 'C', 2],[400.0, 350, 'C', 5],[466.0, 275, 'C', 6]

Co
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(711546, 711546)
Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 20, '%', 1],[135.0, 200, 'C', 1],[149.0, 112, '%', 1],[157.0, 350, 'C', 1],[265.0, 275, 'C', 2],[396.0, 350, 'C', 5],[462.0, 275, 'C', 6]

Fe
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(711548, 711548)
Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 20, '%', 1],[133.0, 200, 'C', 1],[147.0, 112, '%', 1],[155.0, 350, 'C', 1],[263.0, 275, 'C', 2],[394.0, 350, 'C', 5],[460.0, 275, 'C', 6]

B
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(711550, 711550)
Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 20, '%', 1],[131.0, 200, 'C', 1],[145.0, 112, '%', 1],[153.0, 350, 'C', 1],[261.0, 275, 'C', 2],[392.0, 350, 'C', 5],[458.0, 275, 'C', 6]

Co40Fe40B20
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(711591, 711596)
 The knowledge of chemical and magnetic conditions at the Co40Fe40B20 / MgOinterface is important to interpret the strong annealing temperature dependenceof tunnel magnetoresistance of Co-Fe-B / MgO / Co-Fe-B magnetic tunneljunctions, which increases with annealing temperature from 20% after annealingat 200C up to a maximum value of 112% after annealing at 350C.
Featurization terminated normally.
0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 20, '%', 0],[85.0, 200, 'C', 0],[99.0, 112, '%', 0],[107.0, 350, 'C', 0],[215.0, 275, 'C', 1],[346.0, 350, 'C', 4],[412.0, 275, 'C', 5]

MgO
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(711600, 711601)
 The knowledge of chemical and magnetic conditions at the Co40Fe40B20 / MgOinterface is important to interpret the strong annealing temperature dependenceof tunnel magnetoresistance of Co-Fe-B / MgO / Co-Fe-B magnetic tunneljunctions, which increases with annealing temperature from 20% after annealingat 200C up to a maximum value of 112% after annealing at 350C.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 20, '%', 0],[80.0, 200, 'C', 0],[94.0, 112, '%', 0],[102.0, 350, 'C', 0],[210.0, 275, 'C', 1],[341.0, 350, 'C', 4],[407.0, 275, 'C', 5]

Co
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(711633, 711633)
 The knowledge of chemical and magnetic conditions at the Co40Fe40B20 / MgOinterface is important to interpret the strong annealing temperature dependenceof tunnel magnetoresistance of Co-Fe-B / MgO / Co-Fe-B magnetic tunneljunctions, which increases with annealing temperature from 20% after annealingat 200C up to a maximum value of 112% after annealing at 350C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 20, '%', 0],[48.0, 200, 'C', 0],[62.0, 112, '%', 0],[70.0, 350, 'C', 0],[178.0, 275, 'C', 1],[309.0, 350, 'C', 4],[375.0, 275, 'C', 5]

Fe
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(711635, 711635)
 The knowledge of chemical and magnetic conditions at the Co40Fe40B20 / MgOinterface is important to interpret the strong annealing temperature dependenceof tunnel magnetoresistance of Co-Fe-B / MgO / Co-Fe-B magnetic tunneljunctions, which increases with annealing temperature from 20% after annealingat 200C up to a maximum value of 112% after annealing at 350C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 20, '%', 0],[46.0, 200, 'C', 0],[60.0, 112, '%', 0],[68.0, 350, 'C', 0],[176.0, 275, 'C', 1],[307.0, 350, 'C', 4],[373.0, 275, 'C', 5]

B
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(711637, 711637)
 The knowledge of chemical and magnetic conditions at the Co40Fe40B20 / MgOinterface is important to interpret the strong annealing temperature dependenceof tunnel magnetoresistance of Co-Fe-B / MgO / Co-Fe-B magnetic tunneljunctions, which increases with annealing temperature from 20% after annealingat 200C up to a maximum value of 112% after annealing at 350C.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 20, '%', 0],[44.0, 200, 'C', 0],[58.0, 112, '%', 0],[66.0, 350, 'C', 0],[174.0, 275, 'C', 1],[305.0, 350, 'C', 4],[371.0, 275, 'C', 5]

MgO
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(711641, 711642)
 The knowledge of chemical and magnetic conditions at the Co40Fe40B20 / MgOinterface is important to interpret the strong annealing temperature dependenceof tunnel magnetoresistance of Co-Fe-B / MgO / Co-Fe-B magnetic tunneljunctions, which increases with annealing temperature from 20% after annealingat 200C up to a maximum value of 112% after annealing at 350C.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 20, '%', 0],[39.0, 200, 'C', 0],[53.0, 112, '%', 0],[61.0, 350, 'C', 0],[169.0, 275, 'C', 1],[300.0, 350, 'C', 4],[366.0, 275, 'C', 5]

Co
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(711646, 711646)
 The knowledge of chemical and magnetic conditions at the Co40Fe40B20 / MgOinterface is important to interpret the strong annealing temperature dependenceof tunnel magnetoresistance of Co-Fe-B / MgO / Co-Fe-B magnetic tunneljunctions, which increases with annealing temperature from 20% after annealingat 200C up to a maximum value of 112% after annealing at 350C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 20, '%', 0],[35.0, 200, 'C', 0],[49.0, 112, '%', 0],[57.0, 350, 'C', 0],[165.0, 275, 'C', 1],[296.0, 350, 'C', 4],[362.0, 275, 'C', 5]

Fe
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(711648, 711648)
 The knowledge of chemical and magnetic conditions at the Co40Fe40B20 / MgOinterface is important to interpret the strong annealing temperature dependenceof tunnel magnetoresistance of Co-Fe-B / MgO / Co-Fe-B magnetic tunneljunctions, which increases with annealing temperature from 20% after annealingat 200C up to a maximum value of 112% after annealing at 350C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 20, '%', 0],[33.0, 200, 'C', 0],[47.0, 112, '%', 0],[55.0, 350, 'C', 0],[163.0, 275, 'C', 1],[294.0, 350, 'C', 4],[360.0, 275, 'C', 5]

B
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(711650, 711650)
 The knowledge of chemical and magnetic conditions at the Co40Fe40B20 / MgOinterface is important to interpret the strong annealing temperature dependenceof tunnel magnetoresistance of Co-Fe-B / MgO / Co-Fe-B magnetic tunneljunctions, which increases with annealing temperature from 20% after annealingat 200C up to a maximum value of 112% after annealing at 350C.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 20, '%', 0],[31.0, 200, 'C', 0],[45.0, 112, '%', 0],[53.0, 350, 'C', 0],[161.0, 275, 'C', 1],[292.0, 350, 'C', 4],[358.0, 275, 'C', 5]

MgO
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(711729, 711730)
 While the welldefined nearest neighbor ordering indicating crystallinity of the MgO barrierdoes not change by the annealing, a small amount of interfacial Fe-O at thelower Co-Fe-B / MgO interface is found in the as grown samples, which iscompletely reduced after annealing at 275C.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 20, '%', 1],[48.0, 200, 'C', 1],[34.0, 112, '%', 1],[26.0, 350, 'C', 1],[81.0, 275, 'C', 0],[212.0, 350, 'C', 3],[278.0, 275, 'C', 4]

Fe
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(711758, 711758)
 While the welldefined nearest neighbor ordering indicating crystallinity of the MgO barrierdoes not change by the annealing, a small amount of interfacial Fe-O at thelower Co-Fe-B / MgO interface is found in the as grown samples, which iscompletely reduced after annealing at 275C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 20, '%', 1],[77.0, 200, 'C', 1],[63.0, 112, '%', 1],[55.0, 350, 'C', 1],[53.0, 275, 'C', 0],[184.0, 350, 'C', 3],[250.0, 275, 'C', 4]

O
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(711760, 711760)
 While the welldefined nearest neighbor ordering indicating crystallinity of the MgO barrierdoes not change by the annealing, a small amount of interfacial Fe-O at thelower Co-Fe-B / MgO interface is found in the as grown samples, which iscompletely reduced after annealing at 275C.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 20, '%', 1],[79.0, 200, 'C', 1],[65.0, 112, '%', 1],[57.0, 350, 'C', 1],[51.0, 275, 'C', 0],[182.0, 350, 'C', 3],[248.0, 275, 'C', 4]

Co
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(711769, 711769)
 While the welldefined nearest neighbor ordering indicating crystallinity of the MgO barrierdoes not change by the annealing, a small amount of interfacial Fe-O at thelower Co-Fe-B / MgO interface is found in the as grown samples, which iscompletely reduced after annealing at 275C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 20, '%', 1],[88.0, 200, 'C', 1],[74.0, 112, '%', 1],[66.0, 350, 'C', 1],[42.0, 275, 'C', 0],[173.0, 350, 'C', 3],[239.0, 275, 'C', 4]

Fe
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(711771, 711771)
 While the welldefined nearest neighbor ordering indicating crystallinity of the MgO barrierdoes not change by the annealing, a small amount of interfacial Fe-O at thelower Co-Fe-B / MgO interface is found in the as grown samples, which iscompletely reduced after annealing at 275C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 20, '%', 1],[90.0, 200, 'C', 1],[76.0, 112, '%', 1],[68.0, 350, 'C', 1],[40.0, 275, 'C', 0],[171.0, 350, 'C', 3],[237.0, 275, 'C', 4]

B
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(711773, 711773)
 While the welldefined nearest neighbor ordering indicating crystallinity of the MgO barrierdoes not change by the annealing, a small amount of interfacial Fe-O at thelower Co-Fe-B / MgO interface is found in the as grown samples, which iscompletely reduced after annealing at 275C.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 20, '%', 1],[92.0, 200, 'C', 1],[78.0, 112, '%', 1],[70.0, 350, 'C', 1],[38.0, 275, 'C', 0],[169.0, 350, 'C', 3],[235.0, 275, 'C', 4]

MgO
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(711777, 711778)
 While the welldefined nearest neighbor ordering indicating crystallinity of the MgO barrierdoes not change by the annealing, a small amount of interfacial Fe-O at thelower Co-Fe-B / MgO interface is found in the as grown samples, which iscompletely reduced after annealing at 275C.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 20, '%', 1],[96.0, 200, 'C', 1],[82.0, 112, '%', 1],[74.0, 350, 'C', 1],[33.0, 275, 'C', 0],[164.0, 350, 'C', 3],[230.0, 275, 'C', 4]

Fe
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(711833, 711833)
 This is accompanied by asimultaneous increase of the Fe magnetic moment and the tunnelmagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 20, '%', 2],[152.0, 200, 'C', 2],[138.0, 112, '%', 2],[130.0, 350, 'C', 2],[22.0, 275, 'C', 1],[109.0, 350, 'C', 2],[175.0, 275, 'C', 3]

MgO
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(711862, 711863)
 However, the TMR of the MgO based junctions increasesfurther for higher annealing temperature which can not be caused by Fe-Oreduction.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[190.0, 20, '%', 3],[181.0, 200, 'C', 3],[167.0, 112, '%', 3],[159.0, 350, 'C', 3],[51.0, 275, 'C', 2],[79.0, 350, 'C', 1],[145.0, 275, 'C', 2]

Fe
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(711894, 711894)
 However, the TMR of the MgO based junctions increasesfurther for higher annealing temperature which can not be caused by Fe-Oreduction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[222.0, 20, '%', 3],[213.0, 200, 'C', 3],[199.0, 112, '%', 3],[191.0, 350, 'C', 3],[83.0, 275, 'C', 2],[48.0, 350, 'C', 1],[114.0, 275, 'C', 2]

O
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(711896, 711896)
 However, the TMR of the MgO based junctions increasesfurther for higher annealing temperature which can not be caused by Fe-Oreduction.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[224.0, 20, '%', 3],[215.0, 200, 'C', 3],[201.0, 112, '%', 3],[193.0, 350, 'C', 3],[85.0, 275, 'C', 2],[46.0, 350, 'C', 1],[112.0, 275, 'C', 2]

Fe
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(711927, 711927)
 The occurrence of an x<missing VAR>-ray absorption near-edge structure above theFe and Co L<missing VAR>-edges after annealing at 350C indicates the recrystallization ofthe Co-Fe-B electrode.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[255.0, 20, '%', 4],[246.0, 200, 'C', 4],[232.0, 112, '%', 4],[224.0, 350, 'C', 4],[116.0, 275, 'C', 3],[15.0, 350, 'C', 0],[81.0, 275, 'C', 1]

Co
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(711931, 711931)
 The occurrence of an x<missing VAR>-ray absorption near-edge structure above theFe and Co L<missing VAR>-edges after annealing at 350C indicates the recrystallization ofthe Co-Fe-B electrode.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[259.0, 20, '%', 4],[250.0, 200, 'C', 4],[236.0, 112, '%', 4],[228.0, 350, 'C', 4],[120.0, 275, 'C', 3],[11.0, 350, 'C', 0],[77.0, 275, 'C', 1]

Co
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(711955, 711955)
 The occurrence of an x<missing VAR>-ray absorption near-edge structure above theFe and Co L<missing VAR>-edges after annealing at 350C indicates the recrystallization ofthe Co-Fe-B electrode.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[283.0, 20, '%', 4],[274.0, 200, 'C', 4],[260.0, 112, '%', 4],[252.0, 350, 'C', 4],[144.0, 275, 'C', 3],[13.0, 350, 'C', 0],[53.0, 275, 'C', 1]

Fe
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(711957, 711957)
 The occurrence of an x<missing VAR>-ray absorption near-edge structure above theFe and Co L<missing VAR>-edges after annealing at 350C indicates the recrystallization ofthe Co-Fe-B electrode.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[285.0, 20, '%', 4],[276.0, 200, 'C', 4],[262.0, 112, '%', 4],[254.0, 350, 'C', 4],[146.0, 275, 'C', 3],[15.0, 350, 'C', 0],[51.0, 275, 'C', 1]

B
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(711959, 711959)
 The occurrence of an x<missing VAR>-ray absorption near-edge structure above theFe and Co L<missing VAR>-edges after annealing at 350C indicates the recrystallization ofthe Co-Fe-B electrode.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[287.0, 20, '%', 4],[278.0, 200, 'C', 4],[264.0, 112, '%', 4],[256.0, 350, 'C', 4],[148.0, 275, 'C', 3],[17.0, 350, 'C', 0],[49.0, 275, 'C', 1]

B
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(712017, 712017)
Simultaneously, the B concentration in the Co-Fe-B decreases with increasingannealing temperature, at least some of the B diffuses towards or into the MgObarrier and forms a B2O3 oxide.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[345.0, 20, '%', 6],[336.0, 200, 'C', 6],[322.0, 112, '%', 6],[314.0, 350, 'C', 6],[206.0, 275, 'C', 5],[75.0, 350, 'C', 2],[9.0, 275, 'C', 1]

Co
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(712025, 712025)
Simultaneously, the B concentration in the Co-Fe-B decreases with increasingannealing temperature, at least some of the B diffuses towards or into the MgObarrier and forms a B2O3 oxide.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[353.0, 20, '%', 6],[344.0, 200, 'C', 6],[330.0, 112, '%', 6],[322.0, 350, 'C', 6],[214.0, 275, 'C', 5],[83.0, 350, 'C', 2],[17.0, 275, 'C', 1]

Fe
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(712027, 712027)
Simultaneously, the B concentration in the Co-Fe-B decreases with increasingannealing temperature, at least some of the B diffuses towards or into the MgObarrier and forms a B2O3 oxide.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[355.0, 20, '%', 6],[346.0, 200, 'C', 6],[332.0, 112, '%', 6],[324.0, 350, 'C', 6],[216.0, 275, 'C', 5],[85.0, 350, 'C', 2],[19.0, 275, 'C', 1]

B
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(712029, 712029)
Simultaneously, the B concentration in the Co-Fe-B decreases with increasingannealing temperature, at least some of the B diffuses towards or into the MgObarrier and forms a B2O3 oxide.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[357.0, 20, '%', 6],[348.0, 200, 'C', 6],[334.0, 112, '%', 6],[326.0, 350, 'C', 6],[218.0, 275, 'C', 5],[87.0, 350, 'C', 2],[21.0, 275, 'C', 1]

B
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(712053, 712053)
Simultaneously, the B concentration in the Co-Fe-B decreases with increasingannealing temperature, at least some of the B diffuses towards or into the MgObarrier and forms a B2O3 oxide.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[381.0, 20, '%', 6],[372.0, 200, 'C', 6],[358.0, 112, '%', 6],[350.0, 350, 'C', 6],[242.0, 275, 'C', 5],[111.0, 350, 'C', 2],[45.0, 275, 'C', 1]

MgO
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(712065, 712066)
Simultaneously, the B concentration in the Co-Fe-B decreases with increasingannealing temperature, at least some of the B diffuses towards or into the MgObarrier and forms a B2O3 oxide.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[393.0, 20, '%', 6],[384.0, 200, 'C', 6],[370.0, 112, '%', 6],[362.0, 350, 'C', 6],[254.0, 275, 'C', 5],[123.0, 350, 'C', 2],[57.0, 275, 'C', 1]

B2O3
###Influence of chemical and magnetic interface properties of Co-Fe-B / MgO / Co-Fe-B tunnel junctions on the annealing temperature dependence of the magnetoresistance|J. Schmalhorst,A. Thomas,G. Reiss,X. Kou,E. Arenholz###
(712077, 712080)
Simultaneously, the B concentration in the Co-Fe-B decreases with increasingannealing temperature, at least some of the B diffuses towards or into the MgObarrier and forms a B2O3 oxide.
Featurization terminated normally.
0,0,0,0,0.4,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[405.0, 20, '%', 6],[396.0, 200, 'C', 6],[382.0, 112, '%', 6],[374.0, 350, 'C', 6],[266.0, 275, 'C', 5],[135.0, 350, 'C', 2],[69.0, 275, 'C', 1]

Bi
###Quantum interference of surface states in bismuth nanowires probed by the Aharonov-Bohm oscillatory behavior of the magnetoresistance|A. Nikolaeva,D. Gitsu,L. Konopko,M. J. Graf,T. E. Huber###
(712319, 712319)
 The observed effects areconsistent with models of the Bi surface where surface states give rise to asignificant population of charge carriers of high effective mass that form ahighly conducting tube around the nanowire.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 55, 'and', 3],[103.0, 14, 'T', 3],[99.0, 55, 'nm', 2],[86.0, 0.8, 'and', 2],[85.0, 1.6, 'T', 2],[69.0, 4, 'T', 2],[90.0, 15, 'meV', 1]

In
###Quantum interference of surface states in bismuth nanowires probed by the Aharonov-Bohm oscillatory behavior of the magnetoresistance|A. Nikolaeva,D. Gitsu,L. Konopko,M. J. Graf,T. E. Huber###
(712376, 712376)
 In the 55-nm nanowires, the Fermienergy of the surface band is estimated to be 15 meV.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[184.0, 55, 'and', 4],[160.0, 14, 'T', 4],[156.0, 55, 'nm', 3],[143.0, 0.8, 'and', 3],[142.0, 1.6, 'T', 3],[126.0, 4, 'T', 3],[33.0, 15, 'meV', 0]

Cu
###Oxide spintronics|Manuel Bibes,Agnes Barthelemy###
(712575, 712575)
 While this was at first motivated by thediscovery of high-temperature superconductivity in perovskite Cu oxides, thistechnological breakthrough was soon applied to other transition metal oxides,and notably mixed-valence manganites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Oxide spintronics|Manuel Bibes,Agnes Barthelemy###
(712795, 712795)
 In this paper, we will review the most important results onoxide spintronics, emphasizing materials physics as well as spin-dependenttransport phenomena, and finally give some perspectives on how the flurry ofnew magnetic oxides could be useful for next-generation spintronics devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FePt
###Diffusive and ballistic current spin-polarization in magnetron-sputtered L1o-ordered epitaxial FePt|K. M. Seemann,V. Baltz,M. MacKenzie,J. N. Chapman,B. J. Hickey,C. H. Marrows###
(712924, 712925)
Diffusive and ballistic current spin-polarization in magnetron-sputtered L1o-ordered epitaxial FePt.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 2, 'K', 3],[139.0, 258, 'K', 3],[176.0, 2, 'K', 4],[259.0, 2, 'K', 6],[262.0, 258, 'K', 6],[284.0, 80, '%', 6],[319.0, 4.2, 'K', 7],[345.0, 42, '%', 8]

S0.90
###Diffusive and ballistic current spin-polarization in magnetron-sputtered L1o-ordered epitaxial FePt|K. M. Seemann,V. Baltz,M. MacKenzie,J. N. Chapman,B. J. Hickey,C. H. Marrows###
(713016, 713017)
 The film studied displayed a longrange chemical order parameter of S0.90, and hence has a very strongperpendicular magnetic anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 2, 'K', 1],[47.0, 258, 'K', 1],[84.0, 2, 'K', 2],[167.0, 2, 'K', 4],[170.0, 258, 'K', 4],[192.0, 80, '%', 4],[227.0, 4.2, 'K', 5],[253.0, 42, '%', 6]

In
###Diffusive and ballistic current spin-polarization in magnetron-sputtered L1o-ordered epitaxial FePt|K. M. Seemann,V. Baltz,M. MacKenzie,J. N. Chapman,B. J. Hickey,C. H. Marrows###
(713040, 713040)
 In the diffusive electron transport regime,for temperatures ranging from 2 K to 258 K, we found hysteresis in themagnetoresistance mainly due to electron scattering from magnetic domain walls.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 2, 'K', 0],[24.0, 258, 'K', 0],[61.0, 2, 'K', 1],[144.0, 2, 'K', 3],[147.0, 258, 'K', 3],[169.0, 80, '%', 3],[204.0, 4.2, 'K', 4],[230.0, 42, '%', 5]

At
###Diffusive and ballistic current spin-polarization in magnetron-sputtered L1o-ordered epitaxial FePt|K. M. Seemann,V. Baltz,M. MacKenzie,J. N. Chapman,B. J. Hickey,C. H. Marrows###
(713100, 713100)
At 2 K, we observed an overall domain wall magnetoresistance of about 0.5 %.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 2, 'K', 1],[36.0, 258, 'K', 1],[1.0, 2, 'K', 0],[84.0, 2, 'K', 2],[87.0, 258, 'K', 2],[109.0, 80, '%', 2],[144.0, 4.2, 'K', 3],[170.0, 42, '%', 4]

At
###Diffusive and ballistic current spin-polarization in magnetron-sputtered L1o-ordered epitaxial FePt|K. M. Seemann,V. Baltz,M. MacKenzie,J. N. Chapman,B. J. Hickey,C. H. Marrows###
(713174, 713174)
 At all temperaturesranging from 2 K to 258 K, we found a diffusive spin current polarization of >80%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 2, 'K', 3],[110.0, 258, 'K', 3],[73.0, 2, 'K', 2],[10.0, 2, 'K', 0],[13.0, 258, 'K', 0],[35.0, 80, '%', 0],[70.0, 4.2, 'K', 1],[96.0, 42, '%', 2]

Fe
###Diffusive and ballistic current spin-polarization in magnetron-sputtered L1o-ordered epitaxial FePt|K. M. Seemann,V. Baltz,M. MacKenzie,J. N. Chapman,B. J. Hickey,C. H. Marrows###
(713301, 713301)
 We obtained a value for the ballisticcurrent spin polarization of 42% (which compares very well with that of apolycrystalline thin film of elemental Fe).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[240.0, 2, 'K', 5],[237.0, 258, 'K', 5],[200.0, 2, 'K', 4],[117.0, 2, 'K', 2],[114.0, 258, 'K', 2],[92.0, 80, '%', 2],[57.0, 4.2, 'K', 1],[31.0, 42, '%', 0]

I
###Modelling colossal magnetoresistance manganites|T. V. Ramakrishnan###
(713387, 713387)
 I briefly survey here attempts to model the rich and strange behaviour ofcolossal magnetoresistance manganites, after outlining some of the phenomenaobserved in them, and describing the three relevant strong local interactionsof the eg electrons (in two different orbital states at each site), namelywith Jahn-Teller phonon modes (strength g), with resident t2g spins(ferromagnetic Hunds<missing VAR> rule coupling J<missing VAR>H) and amongst each other (the MottHubbard correlation U) .
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Modelling colossal magnetoresistance manganites|T. V. Ramakrishnan###
(713528, 713528)
 I briefly survey here attempts to model the rich and strange behaviour ofcolossal magnetoresistance manganites, after outlining some of the phenomenaobserved in them, and describing the three relevant strong local interactionsof the eg electrons (in two different orbital states at each site), namelywith Jahn-Teller phonon modes (strength g), with resident t2g spins(ferromagnetic Hunds<missing VAR> rule coupling J<missing VAR>H) and amongst each other (the MottHubbard correlation U) .
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

U
###Modelling colossal magnetoresistance manganites|T. V. Ramakrishnan###
(713549, 713549)
 I briefly survey here attempts to model the rich and strange behaviour ofcolossal magnetoresistance manganites, after outlining some of the phenomenaobserved in them, and describing the three relevant strong local interactionsof the eg electrons (in two different orbital states at each site), namelywith Jahn-Teller phonon modes (strength g), with resident t2g spins(ferromagnetic Hunds<missing VAR> rule coupling J<missing VAR>H) and amongst each other (the MottHubbard correlation U) .
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Modelling colossal magnetoresistance manganites|T. V. Ramakrishnan###
(713618, 713618)
 I describe some results of strong couplingU, J<missing VAR>H calculations in single site DMFT<missing VAR> (Dynamical Mean Field Theory), and showthat in the wide orbital liquid regime many characteristic manganite phenomenasuch as an insulating ferromagnetic ground state, thermal insulator metaltransition, colossal magnetoresistance (cmr), materials systematics and theobserved low effective carrier density can all be understood qualitatively andquantitatively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

U
###Modelling colossal magnetoresistance manganites|T. V. Ramakrishnan###
(713633, 713633)
 I describe some results of strong couplingU, J<missing VAR>H calculations in single site DMFT<missing VAR> (Dynamical Mean Field Theory), and showthat in the wide orbital liquid regime many characteristic manganite phenomenasuch as an insulating ferromagnetic ground state, thermal insulator metaltransition, colossal magnetoresistance (cmr), materials systematics and theobserved low effective carrier density can all be understood qualitatively andquantitatively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Modelling colossal magnetoresistance manganites|T. V. Ramakrishnan###
(713637, 713637)
 I describe some results of strong couplingU, J<missing VAR>H calculations in single site DMFT<missing VAR> (Dynamical Mean Field Theory), and showthat in the wide orbital liquid regime many characteristic manganite phenomenasuch as an insulating ferromagnetic ground state, thermal insulator metaltransition, colossal magnetoresistance (cmr), materials systematics and theobserved low effective carrier density can all be understood qualitatively andquantitatively.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Modelling colossal magnetoresistance manganites|T. V. Ramakrishnan###
(713649, 713649)
 I describe some results of strong couplingU, J<missing VAR>H calculations in single site DMFT<missing VAR> (Dynamical Mean Field Theory), and showthat in the wide orbital liquid regime many characteristic manganite phenomenasuch as an insulating ferromagnetic ground state, thermal insulator metaltransition, colossal magnetoresistance (cmr), materials systematics and theobserved low effective carrier density can all be understood qualitatively andquantitatively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Point-contact search for antiferromagnetic giant magnetoresistance|Z. Wei,A. Sharma,J. Bass,M. Tsoi###
(714096, 714096)
 We report on MR measurements for current injected from point contactsinto sandwiches containing different combinations of layers of F  CoFe and AFM<missing VAR> FeMn.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFe
###Point-contact search for antiferromagnetic giant magnetoresistance|Z. Wei,A. Sharma,J. Bass,M. Tsoi###
(714099, 714100)
 We report on MR measurements for current injected from point contactsinto sandwiches containing different combinations of layers of F  CoFe and AFM<missing VAR> FeMn.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Point-contact search for antiferromagnetic giant magnetoresistance|Z. Wei,A. Sharma,J. Bass,M. Tsoi###
(714105, 714105)
 We report on MR measurements for current injected from point contactsinto sandwiches containing different combinations of layers of F  CoFe and AFM<missing VAR> FeMn.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeMn
###Point-contact search for antiferromagnetic giant magnetoresistance|Z. Wei,A. Sharma,J. Bass,M. Tsoi###
(714110, 714111)
 We report on MR measurements for current injected from point contactsinto sandwiches containing different combinations of layers of F  CoFe and AFM<missing VAR> FeMn.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Point-contact search for antiferromagnetic giant magnetoresistance|Z. Wei,A. Sharma,J. Bass,M. Tsoi###
(714114, 714114)
 In addition to AFM<missing VAR>/N/AFM<missing VAR>, F/AFM<missing VAR>/N/AFM<missing VAR>, and F/AFM<missing VAR>/N/AFM<missing VAR>/F structures,initial results led us to examine also AFM<missing VAR>/F/N/AFM<missing VAR>, F/AFM<missing VAR>, and single F- andAFM<missing VAR>-layer structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Point-contact search for antiferromagnetic giant magnetoresistance|Z. Wei,A. Sharma,J. Bass,M. Tsoi###
(714121, 714121)
 In addition to AFM<missing VAR>/N/AFM<missing VAR>, F/AFM<missing VAR>/N/AFM<missing VAR>, and F/AFM<missing VAR>/N/AFM<missing VAR>/F structures,initial results led us to examine also AFM<missing VAR>/F/N/AFM<missing VAR>, F/AFM<missing VAR>, and single F- andAFM<missing VAR>-layer structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Point-contact search for antiferromagnetic giant magnetoresistance|Z. Wei,A. Sharma,J. Bass,M. Tsoi###
(714124, 714124)
 In addition to AFM<missing VAR>/N/AFM<missing VAR>, F/AFM<missing VAR>/N/AFM<missing VAR>, and F/AFM<missing VAR>/N/AFM<missing VAR>/F structures,initial results led us to examine also AFM<missing VAR>/F/N/AFM<missing VAR>, F/AFM<missing VAR>, and single F- andAFM<missing VAR>-layer structures.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Point-contact search for antiferromagnetic giant magnetoresistance|Z. Wei,A. Sharma,J. Bass,M. Tsoi###
(714127, 714127)
 In addition to AFM<missing VAR>/N/AFM<missing VAR>, F/AFM<missing VAR>/N/AFM<missing VAR>, and F/AFM<missing VAR>/N/AFM<missing VAR>/F structures,initial results led us to examine also AFM<missing VAR>/F/N/AFM<missing VAR>, F/AFM<missing VAR>, and single F- andAFM<missing VAR>-layer structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Point-contact search for antiferromagnetic giant magnetoresistance|Z. Wei,A. Sharma,J. Bass,M. Tsoi###
(714131, 714131)
 In addition to AFM<missing VAR>/N/AFM<missing VAR>, F/AFM<missing VAR>/N/AFM<missing VAR>, and F/AFM<missing VAR>/N/AFM<missing VAR>/F structures,initial results led us to examine also AFM<missing VAR>/F/N/AFM<missing VAR>, F/AFM<missing VAR>, and single F- andAFM<missing VAR>-layer structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Point-contact search for antiferromagnetic giant magnetoresistance|Z. Wei,A. Sharma,J. Bass,M. Tsoi###
(714134, 714134)
 In addition to AFM<missing VAR>/N/AFM<missing VAR>, F/AFM<missing VAR>/N/AFM<missing VAR>, and F/AFM<missing VAR>/N/AFM<missing VAR>/F structures,initial results led us to examine also AFM<missing VAR>/F/N/AFM<missing VAR>, F/AFM<missing VAR>, and single F- andAFM<missing VAR>-layer structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Point-contact search for antiferromagnetic giant magnetoresistance|Z. Wei,A. Sharma,J. Bass,M. Tsoi###
(714137, 714137)
 In addition to AFM<missing VAR>/N/AFM<missing VAR>, F/AFM<missing VAR>/N/AFM<missing VAR>, and F/AFM<missing VAR>/N/AFM<missing VAR>/F structures,initial results led us to examine also AFM<missing VAR>/F/N/AFM<missing VAR>, F/AFM<missing VAR>, and single F- andAFM<missing VAR>-layer structures.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Point-contact search for antiferromagnetic giant magnetoresistance|Z. Wei,A. Sharma,J. Bass,M. Tsoi###
(714140, 714140)
 In addition to AFM<missing VAR>/N/AFM<missing VAR>, F/AFM<missing VAR>/N/AFM<missing VAR>, and F/AFM<missing VAR>/N/AFM<missing VAR>/F structures,initial results led us to examine also AFM<missing VAR>/F/N/AFM<missing VAR>, F/AFM<missing VAR>, and single F- andAFM<missing VAR>-layer structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Point-contact search for antiferromagnetic giant magnetoresistance|Z. Wei,A. Sharma,J. Bass,M. Tsoi###
(714146, 714146)
 In addition to AFM<missing VAR>/N/AFM<missing VAR>, F/AFM<missing VAR>/N/AFM<missing VAR>, and F/AFM<missing VAR>/N/AFM<missing VAR>/F structures,initial results led us to examine also AFM<missing VAR>/F/N/AFM<missing VAR>, F/AFM<missing VAR>, and single F- andAFM<missing VAR>-layer structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Point-contact search for antiferromagnetic giant magnetoresistance|Z. Wei,A. Sharma,J. Bass,M. Tsoi###
(714149, 714149)
 In addition to AFM<missing VAR>/N/AFM<missing VAR>, F/AFM<missing VAR>/N/AFM<missing VAR>, and F/AFM<missing VAR>/N/AFM<missing VAR>/F structures,initial results led us to examine also AFM<missing VAR>/F/N/AFM<missing VAR>, F/AFM<missing VAR>, and single F- andAFM<missing VAR>-layer structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Point-contact search for antiferromagnetic giant magnetoresistance|Z. Wei,A. Sharma,J. Bass,M. Tsoi###
(714152, 714152)
 In addition to AFM<missing VAR>/N/AFM<missing VAR>, F/AFM<missing VAR>/N/AFM<missing VAR>, and F/AFM<missing VAR>/N/AFM<missing VAR>/F structures,initial results led us to examine also AFM<missing VAR>/F/N/AFM<missing VAR>, F/AFM<missing VAR>, and single F- andAFM<missing VAR>-layer structures.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Point-contact search for antiferromagnetic giant magnetoresistance|Z. Wei,A. Sharma,J. Bass,M. Tsoi###
(714155, 714155)
 In addition to AFM<missing VAR>/N/AFM<missing VAR>, F/AFM<missing VAR>/N/AFM<missing VAR>, and F/AFM<missing VAR>/N/AFM<missing VAR>/F structures,initial results led us to examine also AFM<missing VAR>/F/N/AFM<missing VAR>, F/AFM<missing VAR>, and single F- andAFM<missing VAR>-layer structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Point-contact search for antiferromagnetic giant magnetoresistance|Z. Wei,A. Sharma,J. Bass,M. Tsoi###
(714158, 714158)
 In addition to AFM<missing VAR>/N/AFM<missing VAR>, F/AFM<missing VAR>/N/AFM<missing VAR>, and F/AFM<missing VAR>/N/AFM<missing VAR>/F structures,initial results led us to examine also AFM<missing VAR>/F/N/AFM<missing VAR>, F/AFM<missing VAR>, and single F- andAFM<missing VAR>-layer structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Point-contact search for antiferromagnetic giant magnetoresistance|Z. Wei,A. Sharma,J. Bass,M. Tsoi###
(714179, 714179)
 In addition to AFM<missing VAR>/N/AFM<missing VAR>, F/AFM<missing VAR>/N/AFM<missing VAR>, and F/AFM<missing VAR>/N/AFM<missing VAR>/F structures,initial results led us to examine also AFM<missing VAR>/F/N/AFM<missing VAR>, F/AFM<missing VAR>, and single F- andAFM<missing VAR>-layer structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F/N
###Point-contact search for antiferromagnetic giant magnetoresistance|Z. Wei,A. Sharma,J. Bass,M. Tsoi###
(714182, 714184)
 In addition to AFM<missing VAR>/N/AFM<missing VAR>, F/AFM<missing VAR>/N/AFM<missing VAR>, and F/AFM<missing VAR>/N/AFM<missing VAR>/F structures,initial results led us to examine also AFM<missing VAR>/F/N/AFM<missing VAR>, F/AFM<missing VAR>, and single F- andAFM<missing VAR>-layer structures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

F
###Point-contact search for antiferromagnetic giant magnetoresistance|Z. Wei,A. Sharma,J. Bass,M. Tsoi###
(714187, 714187)
 In addition to AFM<missing VAR>/N/AFM<missing VAR>, F/AFM<missing VAR>/N/AFM<missing VAR>, and F/AFM<missing VAR>/N/AFM<missing VAR>/F structures,initial results led us to examine also AFM<missing VAR>/F/N/AFM<missing VAR>, F/AFM<missing VAR>, and single F- andAFM<missing VAR>-layer structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Point-contact search for antiferromagnetic giant magnetoresistance|Z. Wei,A. Sharma,J. Bass,M. Tsoi###
(714191, 714191)
 In addition to AFM<missing VAR>/N/AFM<missing VAR>, F/AFM<missing VAR>/N/AFM<missing VAR>, and F/AFM<missing VAR>/N/AFM<missing VAR>/F structures,initial results led us to examine also AFM<missing VAR>/F/N/AFM<missing VAR>, F/AFM<missing VAR>, and single F- andAFM<missing VAR>-layer structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Point-contact search for antiferromagnetic giant magnetoresistance|Z. Wei,A. Sharma,J. Bass,M. Tsoi###
(714194, 714194)
 In addition to AFM<missing VAR>/N/AFM<missing VAR>, F/AFM<missing VAR>/N/AFM<missing VAR>, and F/AFM<missing VAR>/N/AFM<missing VAR>/F structures,initial results led us to examine also AFM<missing VAR>/F/N/AFM<missing VAR>, F/AFM<missing VAR>, and single F- andAFM<missing VAR>-layer structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Point-contact search for antiferromagnetic giant magnetoresistance|Z. Wei,A. Sharma,J. Bass,M. Tsoi###
(714202, 714202)
 In addition to AFM<missing VAR>/N/AFM<missing VAR>, F/AFM<missing VAR>/N/AFM<missing VAR>, and F/AFM<missing VAR>/N/AFM<missing VAR>/F structures,initial results led us to examine also AFM<missing VAR>/F/N/AFM<missing VAR>, F/AFM<missing VAR>, and single F- andAFM<missing VAR>-layer structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Point-contact search for antiferromagnetic giant magnetoresistance|Z. Wei,A. Sharma,J. Bass,M. Tsoi###
(714209, 714209)
 In addition to AFM<missing VAR>/N/AFM<missing VAR>, F/AFM<missing VAR>/N/AFM<missing VAR>, and F/AFM<missing VAR>/N/AFM<missing VAR>/F structures,initial results led us to examine also AFM<missing VAR>/F/N/AFM<missing VAR>, F/AFM<missing VAR>, and single F- andAFM<missing VAR>-layer structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Point-contact search for antiferromagnetic giant magnetoresistance|Z. Wei,A. Sharma,J. Bass,M. Tsoi###
(714217, 714217)
 At low currents, no MR was observed in any samples, andno MR was observed at any current densities in samples containing only AFMs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Point-contact search for antiferromagnetic giant magnetoresistance|Z. Wei,A. Sharma,J. Bass,M. Tsoi###
(714269, 714269)
 At low currents, no MR was observed in any samples, andno MR was observed at any current densities in samples containing only AFMs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Point-contact search for antiferromagnetic giant magnetoresistance|Z. Wei,A. Sharma,J. Bass,M. Tsoi###
(714303, 714303)
 Insamples containing F-layers, high current densities sometimes produced a smallpositive MR - largest resistance at high fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Point-contact search for antiferromagnetic giant magnetoresistance|Z. Wei,A. Sharma,J. Bass,M. Tsoi###
(714310, 714310)
 Insamples containing F-layers, high current densities sometimes produced a smallpositive MR - largest resistance at high fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Point-contact search for antiferromagnetic giant magnetoresistance|Z. Wei,A. Sharma,J. Bass,M. Tsoi###
(714375, 714375)
 For a given contactresistance, this MR was usually larger for thicker F-layers, and for a givencurrent, it was usually larger for larger contact resistances (smallercontacts).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Point-contact search for antiferromagnetic giant magnetoresistance|Z. Wei,A. Sharma,J. Bass,M. Tsoi###
(714456, 714456)
 We tentatively attribute this positive MR to suppression at highcurrents of spin accumulation induced around and within the F-layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFe/NiCoO/CoFe/Cu/CoFe
###Impact of in-plane currents on magnetoresistance properties of an exchange-biased spin-valve with insulating antiferromagnetic layer|D. N. H. Nam,N. C. Thuan,L. V. Hong,N. X. Phuc,S. A. Wolf,N. V. Dai,Y. P. Lee###
(714541, 714554)
 The impact of in-plane alternating currents on the exchange bias, resistance,and magnetoresistance of a CoFe/NiCoO/CoFe/Cu/CoFe spin-valve is studied.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

NiCoO
###Impact of in-plane currents on magnetoresistance properties of an exchange-biased spin-valve with insulating antiferromagnetic layer|D. N. H. Nam,N. C. Thuan,L. V. Hong,N. X. Phuc,S. A. Wolf,N. V. Dai,Y. P. Lee###
(714632, 714634)
 Since the NiCoOoxide is a good insulator, it is expected that the ac current flows only in theCoFe/Cu/CoFe top layers, thus ruling out any presence of spin-transfer torqueacting on the spins in the antiferromagnetic layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFe/Cu/CoFe
###Impact of in-plane currents on magnetoresistance properties of an exchange-biased spin-valve with insulating antiferromagnetic layer|D. N. H. Nam,N. C. Thuan,L. V. Hong,N. X. Phuc,S. A. Wolf,N. V. Dai,Y. P. Lee###
(714671, 714677)
 Since the NiCoOoxide is a good insulator, it is expected that the ac current flows only in theCoFe/Cu/CoFe top layers, thus ruling out any presence of spin-transfer torqueacting on the spins in the antiferromagnetic layer.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

La0.5Ba0.5CoO3
###Cationic Ordering and Microstructural Effects in the Ferromagnetic Perovskite La0.5Ba0.5CoO3: Impact upon Magnetotransport Properties|Eeva Leena Rautama,Philippe Boullay,Asish K. Kundu,Vincent Caignaert,Valerie Pralong,Maarit Karppinen,Bernard Raveau###
(714905, 714911)
Cationic Ordering and Microstructural Effects in the Ferromagnetic Perovskite La0.5Ba0.5CoO3 Impact upon Magnetotransport Properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 90, 'degree', 3],[255.0, 4.2, 'kOe', 4],[349.0, 70, 'kOe', 5]

La0.5Ba0.5CoO3
###Cationic Ordering and Microstructural Effects in the Ferromagnetic Perovskite La0.5Ba0.5CoO3: Impact upon Magnetotransport Properties|Eeva Leena Rautama,Philippe Boullay,Asish K. Kundu,Vincent Caignaert,Valerie Pralong,Maarit Karppinen,Bernard Raveau###
(714941, 714947)
 The synthesis and structural study of the stoichiometric perovskiteLa0.5Ba0.5CoO3 have allowed three forms to be isolated.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 90, 'degree', 2],[219.0, 4.2, 'kOe', 3],[313.0, 70, 'kOe', 4]

La0.5Ba0.5CoO3
###Cationic Ordering and Microstructural Effects in the Ferromagnetic Perovskite La0.5Ba0.5CoO3: Impact upon Magnetotransport Properties|Eeva Leena Rautama,Philippe Boullay,Asish K. Kundu,Vincent Caignaert,Valerie Pralong,Maarit Karppinen,Bernard Raveau###
(714971, 714977)
 Besides the disorderedLa0.5Ba0.5CoO3 and the perfectly ordered layered LaBaCo2O6, a third form callednanoscale-ordered LaBaCo2O6, is obtained.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 90, 'degree', 1],[189.0, 4.2, 'kOe', 2],[283.0, 70, 'kOe', 3]

LaBaCo2O6
###Cationic Ordering and Microstructural Effects in the Ferromagnetic Perovskite La0.5Ba0.5CoO3: Impact upon Magnetotransport Properties|Eeva Leena Rautama,Philippe Boullay,Asish K. Kundu,Vincent Caignaert,Valerie Pralong,Maarit Karppinen,Bernard Raveau###
(714989, 714994)
 Besides the disorderedLa0.5Ba0.5CoO3 and the perfectly ordered layered LaBaCo2O6, a third form callednanoscale-ordered LaBaCo2O6, is obtained.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 90, 'degree', 1],[172.0, 4.2, 'kOe', 2],[266.0, 70, 'kOe', 3]

LaBaCo2O6
###Cationic Ordering and Microstructural Effects in the Ferromagnetic Perovskite La0.5Ba0.5CoO3: Impact upon Magnetotransport Properties|Eeva Leena Rautama,Philippe Boullay,Asish K. Kundu,Vincent Caignaert,Valerie Pralong,Maarit Karppinen,Bernard Raveau###
(715010, 715015)
 Besides the disorderedLa0.5Ba0.5CoO3 and the perfectly ordered layered LaBaCo2O6, a third form callednanoscale-ordered LaBaCo2O6, is obtained.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 90, 'degree', 1],[151.0, 4.2, 'kOe', 2],[245.0, 70, 'kOe', 3]

As
###Cationic Ordering and Microstructural Effects in the Ferromagnetic Perovskite La0.5Ba0.5CoO3: Impact upon Magnetotransport Properties|Eeva Leena Rautama,Philippe Boullay,Asish K. Kundu,Vincent Caignaert,Valerie Pralong,Maarit Karppinen,Bernard Raveau###
(715023, 715023)
 As evidenced by transmission electronmicroscopy investigations, the latter consists of 112-type 90 degree orienteddomains fitted into each other at a nanometer scale which induce large strainsand consequently local atomic scale lattice distortions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 90, 'degree', 0],[143.0, 4.2, 'kOe', 1],[237.0, 70, 'kOe', 2]

Tc
###Cationic Ordering and Microstructural Effects in the Ferromagnetic Perovskite La0.5Ba0.5CoO3: Impact upon Magnetotransport Properties|Eeva Leena Rautama,Philippe Boullay,Asish K. Kundu,Vincent Caignaert,Valerie Pralong,Maarit Karppinen,Bernard Raveau###
(715114, 715114)
 These threeferromagnetic perovskites exhibit practically the same Tc (174-179 K), butdifferently from the other phases, the nanoscale-ordered LaBaCo2O6 is a hardferromagnet, with Hc  4.2 kOe, due to the strains which may pin domain walls,preventing the reversal of the spins in a magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 90, 'degree', 1],[52.0, 4.2, 'kOe', 0],[146.0, 70, 'kOe', 1]

K
###Cationic Ordering and Microstructural Effects in the Ferromagnetic Perovskite La0.5Ba0.5CoO3: Impact upon Magnetotransport Properties|Eeva Leena Rautama,Philippe Boullay,Asish K. Kundu,Vincent Caignaert,Valerie Pralong,Maarit Karppinen,Bernard Raveau###
(715121, 715121)
 These threeferromagnetic perovskites exhibit practically the same Tc (174-179 K), butdifferently from the other phases, the nanoscale-ordered LaBaCo2O6 is a hardferromagnet, with Hc  4.2 kOe, due to the strains which may pin domain walls,preventing the reversal of the spins in a magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 90, 'degree', 1],[45.0, 4.2, 'kOe', 0],[139.0, 70, 'kOe', 1]

LaBaCo2O6
###Cationic Ordering and Microstructural Effects in the Ferromagnetic Perovskite La0.5Ba0.5CoO3: Impact upon Magnetotransport Properties|Eeva Leena Rautama,Philippe Boullay,Asish K. Kundu,Vincent Caignaert,Valerie Pralong,Maarit Karppinen,Bernard Raveau###
(715145, 715150)
 These threeferromagnetic perovskites exhibit practically the same Tc (174-179 K), butdifferently from the other phases, the nanoscale-ordered LaBaCo2O6 is a hardferromagnet, with Hc  4.2 kOe, due to the strains which may pin domain walls,preventing the reversal of the spins in a magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 90, 'degree', 1],[16.0, 4.2, 'kOe', 0],[110.0, 70, 'kOe', 1]

Tc
###Cationic Ordering and Microstructural Effects in the Ferromagnetic Perovskite La0.5Ba0.5CoO3: Impact upon Magnetotransport Properties|Eeva Leena Rautama,Philippe Boullay,Asish K. Kundu,Vincent Caignaert,Valerie Pralong,Maarit Karppinen,Bernard Raveau###
(715257, 715257)
 The magnetotransportproperties of these phases show that all of them exhibit a maximum intrinsicmagnetoresistance, close to 6-7 % around Tc under 70 kOe but that the orderedphase exhibits a much higher tunnelling magnetoresistance effect at lowtemperature of about 15 % against 4 % due to the grain boundary effects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[207.0, 90, 'degree', 2],[91.0, 4.2, 'kOe', 1],[3.0, 70, 'kOe', 0]

LaBaCo2O5.5
###Electron transport and thermoelectric properties of layered perovskite LaBaCo2O5.5|Asish K. Kundu,B. Raveau,V. Caignaert,E. -L. Rautama,V. Pralong###
(715345, 715350)
Electron transport and thermoelectric properties of layered perovskite LaBaCo2O5.5.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5789473684210527,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.21052631578947367,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.10526315789473684,0.10526315789473684,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 326, 'K', 3],[298.0, 303, 'uV', 5],[304.0, 120, 'K', 5]

LaBaCo2O5.5
###Electron transport and thermoelectric properties of layered perovskite LaBaCo2O5.5|Asish K. Kundu,B. Raveau,V. Caignaert,E. -L. Rautama,V. Pralong###
(715380, 715385)
 We have investigated the systematic transport properties of the layered112-type cobaltite LaBaCo2O5.5 by means of electrical resistivity,magnetoresistance, electroresistance and thermoelectric measurements in variousconditions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5789473684210527,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.21052631578947367,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.10526315789473684,0.10526315789473684,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 326, 'K', 2],[263.0, 303, 'uV', 4],[269.0, 120, 'K', 4]

In
###Electron transport and thermoelectric properties of layered perovskite LaBaCo2O5.5|Asish K. Kundu,B. Raveau,V. Caignaert,E. -L. Rautama,V. Pralong###
(715418, 715418)
 In order to understand the complex conduction mechanism ofLaBaCo2O5.5, the transport data have been analyzed using different theoreticalmodels.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 326, 'K', 1],[230.0, 303, 'uV', 3],[236.0, 120, 'K', 3]

LaBaCo2O5.5
###Electron transport and thermoelectric properties of layered perovskite LaBaCo2O5.5|Asish K. Kundu,B. Raveau,V. Caignaert,E. -L. Rautama,V. Pralong###
(715437, 715442)
 In order to understand the complex conduction mechanism ofLaBaCo2O5.5, the transport data have been analyzed using different theoreticalmodels.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5789473684210527,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.21052631578947367,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.10526315789473684,0.10526315789473684,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 326, 'K', 1],[206.0, 303, 'uV', 3],[212.0, 120, 'K', 3]

C
###Electron transport and thermoelectric properties of layered perovskite LaBaCo2O5.5|Asish K. Kundu,B. Raveau,V. Caignaert,E. -L. Rautama,V. Pralong###
(715484, 715484)
 The system shows semiconductor-semiconductor like transition (T<missing VAR>SC)around 326K, corresponding to ferromagnetic transition and in the lowtemperature region resistivity data follows the Motts variable range hoppingmodel.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 326, 'K', 0],[164.0, 303, 'uV', 2],[170.0, 120, 'K', 2]

S
###Electron transport and thermoelectric properties of layered perovskite LaBaCo2O5.5|Asish K. Kundu,B. Raveau,V. Caignaert,E. -L. Rautama,V. Pralong###
(715605, 715605)
 The temperature dependence ofthermopower, S(T), exhibits p<missing VAR>-type polaronic conductivity in the temperaturerange of 60-320K and reaches a maximum value of 303 uV/K (at 120K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 326, 'K', 2],[43.0, 303, 'uV', 0],[49.0, 120, 'K', 0]

K
###Electron transport and thermoelectric properties of layered perovskite LaBaCo2O5.5|Asish K. Kundu,B. Raveau,V. Caignaert,E. -L. Rautama,V. Pralong###
(715635, 715635)
 The temperature dependence ofthermopower, S(T), exhibits p<missing VAR>-type polaronic conductivity in the temperaturerange of 60-320K and reaches a maximum value of 303 uV/K (at 120K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 326, 'K', 2],[13.0, 303, 'uV', 0],[19.0, 120, 'K', 0]

K
###Electron transport and thermoelectric properties of layered perovskite LaBaCo2O5.5|Asish K. Kundu,B. Raveau,V. Caignaert,E. -L. Rautama,V. Pralong###
(715650, 715650)
 The temperature dependence ofthermopower, S(T), exhibits p<missing VAR>-type polaronic conductivity in the temperaturerange of 60-320K and reaches a maximum value of 303 uV/K (at 120K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 326, 'K', 2],[2.0, 303, 'uV', 0],[4.0, 120, 'K', 0]

In
###Electron transport and thermoelectric properties of layered perovskite LaBaCo2O5.5|Asish K. Kundu,B. Raveau,V. Caignaert,E. -L. Rautama,V. Pralong###
(715658, 715658)
 In the lowtemperature AFM<missing VAR> region, the unusual S(T) behavior, generally observed for thecobaltite series LnBaCo2O5.5 (Ln  Rare Earth), is explained by the electronmagnon scattering mechanism as previously described for perovskite manganites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 326, 'K', 3],[10.0, 303, 'uV', 1],[4.0, 120, 'K', 1]

F
###Electron transport and thermoelectric properties of layered perovskite LaBaCo2O5.5|Asish K. Kundu,B. Raveau,V. Caignaert,E. -L. Rautama,V. Pralong###
(715668, 715668)
 In the lowtemperature AFM<missing VAR> region, the unusual S(T) behavior, generally observed for thecobaltite series LnBaCo2O5.5 (Ln  Rare Earth), is explained by the electronmagnon scattering mechanism as previously described for perovskite manganites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 326, 'K', 3],[20.0, 303, 'uV', 1],[14.0, 120, 'K', 1]

S
###Electron transport and thermoelectric properties of layered perovskite LaBaCo2O5.5|Asish K. Kundu,B. Raveau,V. Caignaert,E. -L. Rautama,V. Pralong###
(715678, 715678)
 In the lowtemperature AFM<missing VAR> region, the unusual S(T) behavior, generally observed for thecobaltite series LnBaCo2O5.5 (Ln  Rare Earth), is explained by the electronmagnon scattering mechanism as previously described for perovskite manganites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[189.0, 326, 'K', 3],[30.0, 303, 'uV', 1],[24.0, 120, 'K', 1]

BaCo2O5.5
###Electron transport and thermoelectric properties of layered perovskite LaBaCo2O5.5|Asish K. Kundu,B. Raveau,V. Caignaert,E. -L. Rautama,V. Pralong###
(715700, 715704)
 In the lowtemperature AFM<missing VAR> region, the unusual S(T) behavior, generally observed for thecobaltite series LnBaCo2O5.5 (Ln  Rare Earth), is explained by the electronmagnon scattering mechanism as previously described for perovskite manganites.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6470588235294118,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23529411764705882,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.11764705882352941,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[211.0, 326, 'K', 3],[52.0, 303, 'uV', 1],[46.0, 120, 'K', 1]

CeIrIn5
###Magneto-transport properties governed by the antiferromagnetic fluctuations in heavy fermion superconductor CeIrIn$_{5}$|Y. Nakajima,H. Shishido,H. Nakai,T. Shibauchi,M. Hedo,Y. Uwatoko,T. Matsumoto,R. Settai,Y. Onuki,H. Kontani,Y. Matsuda###
(715778, 715781)
Magneto-transport properties governed by the antiferromagnetic fluctuations in heavy fermion superconductor CeIrIn5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7142857142857143,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[242.0, 2, ',', 4]

In
###Magneto-transport properties governed by the antiferromagnetic fluctuations in heavy fermion superconductor CeIrIn$_{5}$|Y. Nakajima,H. Shishido,H. Nakai,T. Shibauchi,M. Hedo,Y. Uwatoko,T. Matsumoto,R. Settai,Y. Onuki,H. Kontani,Y. Matsuda###
(715784, 715784)
 In quasi-two dimensional Ce(Ir,Rh)In5 system, it has been suggested thatthe phase diagram contains two distinct domes with different heavy fermionsuperconducting states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[239.0, 2, ',', 3]

Ce
###Magneto-transport properties governed by the antiferromagnetic fluctuations in heavy fermion superconductor CeIrIn$_{5}$|Y. Nakajima,H. Shishido,H. Nakai,T. Shibauchi,M. Hedo,Y. Uwatoko,T. Matsumoto,R. Settai,Y. Onuki,H. Kontani,Y. Matsuda###
(715792, 715792)
 In quasi-two dimensional Ce(Ir,Rh)In5 system, it has been suggested thatthe phase diagram contains two distinct domes with different heavy fermionsuperconducting states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[231.0, 2, ',', 3]

Ir
###Magneto-transport properties governed by the antiferromagnetic fluctuations in heavy fermion superconductor CeIrIn$_{5}$|Y. Nakajima,H. Shishido,H. Nakai,T. Shibauchi,M. Hedo,Y. Uwatoko,T. Matsumoto,R. Settai,Y. Onuki,H. Kontani,Y. Matsuda###
(715794, 715794)
 In quasi-two dimensional Ce(Ir,Rh)In5 system, it has been suggested thatthe phase diagram contains two distinct domes with different heavy fermionsuperconducting states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[229.0, 2, ',', 3]

Rh
###Magneto-transport properties governed by the antiferromagnetic fluctuations in heavy fermion superconductor CeIrIn$_{5}$|Y. Nakajima,H. Shishido,H. Nakai,T. Shibauchi,M. Hedo,Y. Uwatoko,T. Matsumoto,R. Settai,Y. Onuki,H. Kontani,Y. Matsuda###
(715796, 715796)
 In quasi-two dimensional Ce(Ir,Rh)In5 system, it has been suggested thatthe phase diagram contains two distinct domes with different heavy fermionsuperconducting states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[227.0, 2, ',', 3]

In5
###Magneto-transport properties governed by the antiferromagnetic fluctuations in heavy fermion superconductor CeIrIn$_{5}$|Y. Nakajima,H. Shishido,H. Nakai,T. Shibauchi,M. Hedo,Y. Uwatoko,T. Matsumoto,R. Settai,Y. Onuki,H. Kontani,Y. Matsuda###
(715798, 715799)
 In quasi-two dimensional Ce(Ir,Rh)In5 system, it has been suggested thatthe phase diagram contains two distinct domes with different heavy fermionsuperconducting states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[224.0, 2, ',', 3]

CeRh0.2Ir0.8In5
###Magneto-transport properties governed by the antiferromagnetic fluctuations in heavy fermion superconductor CeIrIn$_{5}$|Y. Nakajima,H. Shishido,H. Nakai,T. Shibauchi,M. Hedo,Y. Uwatoko,T. Matsumoto,R. Settai,Y. Onuki,H. Kontani,Y. Matsuda###
(715879, 715885)
 We here report the systematic pressure dependence ofthe electron transport properties in the normal state ofCeRh0.2Ir0.8In5 and CeIrIn5, which locates in first andsecond superconducting dome, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.028571428571428574,0,0,0,0.7142857142857143,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1142857142857143,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 2, ',', 2]

CeIrIn5
###Magneto-transport properties governed by the antiferromagnetic fluctuations in heavy fermion superconductor CeIrIn$_{5}$|Y. Nakajima,H. Shishido,H. Nakai,T. Shibauchi,M. Hedo,Y. Uwatoko,T. Matsumoto,R. Settai,Y. Onuki,H. Kontani,Y. Matsuda###
(715889, 715892)
 We here report the systematic pressure dependence ofthe electron transport properties in the normal state ofCeRh0.2Ir0.8In5 and CeIrIn5, which locates in first andsecond superconducting dome, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7142857142857143,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 2, ',', 2]

H
###Magneto-transport properties governed by the antiferromagnetic fluctuations in heavy fermion superconductor CeIrIn$_{5}$|Y. Nakajima,H. Shishido,H. Nakai,T. Shibauchi,M. Hedo,Y. Uwatoko,T. Matsumoto,R. Settai,Y. Onuki,H. Kontani,Y. Matsuda###
(716016, 716016)
 We show thatthe cotangent of Hall angle cot ThetaH varies as T<missing VAR>2, and themagnetoresistance is quite well scaled by the Hall angle as Deltarhoxx/rhoxxpropto tan2ThetaH.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 2, ',', 0]

H
###Magneto-transport properties governed by the antiferromagnetic fluctuations in heavy fermion superconductor CeIrIn$_{5}$|Y. Nakajima,H. Shishido,H. Nakai,T. Shibauchi,M. Hedo,Y. Uwatoko,T. Matsumoto,R. Settai,Y. Onuki,H. Kontani,Y. Matsuda###
(716064, 716064)
 We show thatthe cotangent of Hall angle cot ThetaH varies as T<missing VAR>2, and themagnetoresistance is quite well scaled by the Hall angle as Deltarhoxx/rhoxxpropto tan2ThetaH.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 2, ',', 0]

Ce
###Magneto-transport properties governed by the antiferromagnetic fluctuations in heavy fermion superconductor CeIrIn$_{5}$|Y. Nakajima,H. Shishido,H. Nakai,T. Shibauchi,M. Hedo,Y. Uwatoko,T. Matsumoto,R. Settai,Y. Onuki,H. Kontani,Y. Matsuda###
(716084, 716084)
 The observed transport anomaliesare common features of CeM<missing VAR>In5 (M<missing VAR>Co, Rh, and Ir) and high-Tccuprates, suggesting that the anomalous transport properties observed inCeIrIn5 are mainly governed by the antiferromagnetic spin fluctuations,not by the Ce-valence fluctuations which has been proposed to be the possibleorigin for the second superconducting dome.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 2, ',', 1]

In5
###Magneto-transport properties governed by the antiferromagnetic fluctuations in heavy fermion superconductor CeIrIn$_{5}$|Y. Nakajima,H. Shishido,H. Nakai,T. Shibauchi,M. Hedo,Y. Uwatoko,T. Matsumoto,R. Settai,Y. Onuki,H. Kontani,Y. Matsuda###
(716086, 716087)
 The observed transport anomaliesare common features of CeM<missing VAR>In5 (M<missing VAR>Co, Rh, and Ir) and high-Tccuprates, suggesting that the anomalous transport properties observed inCeIrIn5 are mainly governed by the antiferromagnetic spin fluctuations,not by the Ce-valence fluctuations which has been proposed to be the possibleorigin for the second superconducting dome.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 2, ',', 1]

Co
###Magneto-transport properties governed by the antiferromagnetic fluctuations in heavy fermion superconductor CeIrIn$_{5}$|Y. Nakajima,H. Shishido,H. Nakai,T. Shibauchi,M. Hedo,Y. Uwatoko,T. Matsumoto,R. Settai,Y. Onuki,H. Kontani,Y. Matsuda###
(716091, 716091)
 The observed transport anomaliesare common features of CeM<missing VAR>In5 (M<missing VAR>Co, Rh, and Ir) and high-Tccuprates, suggesting that the anomalous transport properties observed inCeIrIn5 are mainly governed by the antiferromagnetic spin fluctuations,not by the Ce-valence fluctuations which has been proposed to be the possibleorigin for the second superconducting dome.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 2, ',', 1]

Rh
###Magneto-transport properties governed by the antiferromagnetic fluctuations in heavy fermion superconductor CeIrIn$_{5}$|Y. Nakajima,H. Shishido,H. Nakai,T. Shibauchi,M. Hedo,Y. Uwatoko,T. Matsumoto,R. Settai,Y. Onuki,H. Kontani,Y. Matsuda###
(716094, 716094)
 The observed transport anomaliesare common features of CeM<missing VAR>In5 (M<missing VAR>Co, Rh, and Ir) and high-Tccuprates, suggesting that the anomalous transport properties observed inCeIrIn5 are mainly governed by the antiferromagnetic spin fluctuations,not by the Ce-valence fluctuations which has been proposed to be the possibleorigin for the second superconducting dome.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 2, ',', 1]

Ir
###Magneto-transport properties governed by the antiferromagnetic fluctuations in heavy fermion superconductor CeIrIn$_{5}$|Y. Nakajima,H. Shishido,H. Nakai,T. Shibauchi,M. Hedo,Y. Uwatoko,T. Matsumoto,R. Settai,Y. Onuki,H. Kontani,Y. Matsuda###
(716099, 716099)
 The observed transport anomaliesare common features of CeM<missing VAR>In5 (M<missing VAR>Co, Rh, and Ir) and high-Tccuprates, suggesting that the anomalous transport properties observed inCeIrIn5 are mainly governed by the antiferromagnetic spin fluctuations,not by the Ce-valence fluctuations which has been proposed to be the possibleorigin for the second superconducting dome.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 2, ',', 1]

CeIrIn5
###Magneto-transport properties governed by the antiferromagnetic fluctuations in heavy fermion superconductor CeIrIn$_{5}$|Y. Nakajima,H. Shishido,H. Nakai,T. Shibauchi,M. Hedo,Y. Uwatoko,T. Matsumoto,R. Settai,Y. Onuki,H. Kontani,Y. Matsuda###
(716130, 716133)
 The observed transport anomaliesare common features of CeM<missing VAR>In5 (M<missing VAR>Co, Rh, and Ir) and high-Tccuprates, suggesting that the anomalous transport properties observed inCeIrIn5 are mainly governed by the antiferromagnetic spin fluctuations,not by the Ce-valence fluctuations which has been proposed to be the possibleorigin for the second superconducting dome.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7142857142857143,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 2, ',', 1]

Ce
###Magneto-transport properties governed by the antiferromagnetic fluctuations in heavy fermion superconductor CeIrIn$_{5}$|Y. Nakajima,H. Shishido,H. Nakai,T. Shibauchi,M. Hedo,Y. Uwatoko,T. Matsumoto,R. Settai,Y. Onuki,H. Kontani,Y. Matsuda###
(716159, 716159)
 The observed transport anomaliesare common features of CeM<missing VAR>In5 (M<missing VAR>Co, Rh, and Ir) and high-Tccuprates, suggesting that the anomalous transport properties observed inCeIrIn5 are mainly governed by the antiferromagnetic spin fluctuations,not by the Ce-valence fluctuations which has been proposed to be the possibleorigin for the second superconducting dome.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 2, ',', 1]

EuFe2As2
###Metamagnetic transition in EuFe$_2$As$_2$ single crystals|Shuai Jiang,Yongkang Luo,Zhi Ren,Zengwei Zhu,Cao Wang,Xiangfan Xu,Qian Tao,Guanghan Cao,Zhu'an Xu###
(716209, 716213)
Metamagnetic transition in EuFe2As2 single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 186, 'K', 2],[112.0, 19, 'K', 2],[182.0, 2, 'K', 4]

EuFe2As2
###Metamagnetic transition in EuFe$_2$As$_2$ single crystals|Shuai Jiang,Yongkang Luo,Zhi Ren,Zengwei Zhu,Cao Wang,Xiangfan Xu,Qian Tao,Guanghan Cao,Zhu'an Xu###
(716247, 716251)
 We report the measurements of anisotropic magnetization and magnetoresistanceon single crystals of EuFe2As2, a parent compound of ferro-arsenidehigh-temperature superconductor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 186, 'K', 1],[74.0, 19, 'K', 1],[144.0, 2, 'K', 3]

F
###Metamagnetic transition in EuFe$_2$As$_2$ single crystals|Shuai Jiang,Yongkang Luo,Zhi Ren,Zengwei Zhu,Cao Wang,Xiangfan Xu,Qian Tao,Guanghan Cao,Zhu'an Xu###
(716284, 716284)
 Apart from the antiferromagnetic (AFM)spin-density-wave transition at 186 K associated with Fe moments, the compoundundergoes another magnetic phase transition at 19 K due to AFM<missing VAR> ordering ofEu2 spins (J<missing VAR>S7/2).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 186, 'K', 0],[41.0, 19, 'K', 0],[111.0, 2, 'K', 2]

Fe
###Metamagnetic transition in EuFe$_2$As$_2$ single crystals|Shuai Jiang,Yongkang Luo,Zhi Ren,Zengwei Zhu,Cao Wang,Xiangfan Xu,Qian Tao,Guanghan Cao,Zhu'an Xu###
(716304, 716304)
 Apart from the antiferromagnetic (AFM)spin-density-wave transition at 186 K associated with Fe moments, the compoundundergoes another magnetic phase transition at 19 K due to AFM<missing VAR> ordering ofEu2 spins (J<missing VAR>S7/2).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 186, 'K', 0],[21.0, 19, 'K', 0],[91.0, 2, 'K', 2]

F
###Metamagnetic transition in EuFe$_2$As$_2$ single crystals|Shuai Jiang,Yongkang Luo,Zhi Ren,Zengwei Zhu,Cao Wang,Xiangfan Xu,Qian Tao,Guanghan Cao,Zhu'an Xu###
(716332, 716332)
 Apart from the antiferromagnetic (AFM)spin-density-wave transition at 186 K associated with Fe moments, the compoundundergoes another magnetic phase transition at 19 K due to AFM<missing VAR> ordering ofEu2 spins (J<missing VAR>S7/2).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 186, 'K', 0],[7.0, 19, 'K', 0],[63.0, 2, 'K', 2]

Eu2
###Metamagnetic transition in EuFe$_2$As$_2$ single crystals|Shuai Jiang,Yongkang Luo,Zhi Ren,Zengwei Zhu,Cao Wang,Xiangfan Xu,Qian Tao,Guanghan Cao,Zhu'an Xu###
(716340, 716341)
 Apart from the antiferromagnetic (AFM)spin-density-wave transition at 186 K associated with Fe moments, the compoundundergoes another magnetic phase transition at 19 K due to AFM<missing VAR> ordering ofEu2 spins (J<missing VAR>S7/2).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 186, 'K', 0],[15.0, 19, 'K', 0],[54.0, 2, 'K', 2]

S7
###Metamagnetic transition in EuFe$_2$As$_2$ single crystals|Shuai Jiang,Yongkang Luo,Zhi Ren,Zengwei Zhu,Cao Wang,Xiangfan Xu,Qian Tao,Guanghan Cao,Zhu'an Xu###
(716347, 716348)
 Apart from the antiferromagnetic (AFM)spin-density-wave transition at 186 K associated with Fe moments, the compoundundergoes another magnetic phase transition at 19 K due to AFM<missing VAR> ordering ofEu2 spins (J<missing VAR>S7/2).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 186, 'K', 0],[22.0, 19, 'K', 0],[47.0, 2, 'K', 2]

F
###Metamagnetic transition in EuFe$_2$As$_2$ single crystals|Shuai Jiang,Yongkang Luo,Zhi Ren,Zengwei Zhu,Cao Wang,Xiangfan Xu,Qian Tao,Guanghan Cao,Zhu'an Xu###
(716359, 716359)
 The latter AFM<missing VAR> state exhibits metamagnetictransition under magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 186, 'K', 1],[34.0, 19, 'K', 1],[36.0, 2, 'K', 1]

H
###Metamagnetic transition in EuFe$_2$As$_2$ single crystals|Shuai Jiang,Yongkang Luo,Zhi Ren,Zengwei Zhu,Cao Wang,Xiangfan Xu,Qian Tao,Guanghan Cao,Zhu'an Xu###
(716388, 716388)
 Upon applying magnetic field with Hparallelc<missing VAR> at 2 K, the magnetization increases linearly to 7.0 muB/f.u.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 186, 'K', 2],[63.0, 19, 'K', 2],[7.0, 2, 'K', 0]

B
###Metamagnetic transition in EuFe$_2$As$_2$ single crystals|Shuai Jiang,Yongkang Luo,Zhi Ren,Zengwei Zhu,Cao Wang,Xiangfan Xu,Qian Tao,Guanghan Cao,Zhu'an Xu###
(716411, 716411)
 Upon applying magnetic field with Hparallelc<missing VAR> at 2 K, the magnetization increases linearly to 7.0 muB/f.u.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 186, 'K', 2],[86.0, 19, 'K', 2],[16.0, 2, 'K', 0]

H1.7
###Metamagnetic transition in EuFe$_2$As$_2$ single crystals|Shuai Jiang,Yongkang Luo,Zhi Ren,Zengwei Zhu,Cao Wang,Xiangfan Xu,Qian Tao,Guanghan Cao,Zhu'an Xu###
(716423, 716424)
 atmu0H1.7 T<missing VAR>, then keeps at this value of saturated Eu2 moments underhigher fields.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 186, 'K', 3],[98.0, 19, 'K', 3],[28.0, 2, 'K', 1]

Eu2
###Metamagnetic transition in EuFe$_2$As$_2$ single crystals|Shuai Jiang,Yongkang Luo,Zhi Ren,Zengwei Zhu,Cao Wang,Xiangfan Xu,Qian Tao,Guanghan Cao,Zhu'an Xu###
(716443, 716444)
 atmu0H1.7 T<missing VAR>, then keeps at this value of saturated Eu2 moments underhigher fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 186, 'K', 3],[118.0, 19, 'K', 3],[48.0, 2, 'K', 1]

In
###Metamagnetic transition in EuFe$_2$As$_2$ single crystals|Shuai Jiang,Yongkang Luo,Zhi Ren,Zengwei Zhu,Cao Wang,Xiangfan Xu,Qian Tao,Guanghan Cao,Zhu'an Xu###
(716456, 716456)
 In the case of Hparallel ab, the magnetization increasesstep-like to 6.6 muB/f.u.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 186, 'K', 4],[131.0, 19, 'K', 4],[61.0, 2, 'K', 2]

H
###Metamagnetic transition in EuFe$_2$As$_2$ single crystals|Shuai Jiang,Yongkang Luo,Zhi Ren,Zengwei Zhu,Cao Wang,Xiangfan Xu,Qian Tao,Guanghan Cao,Zhu'an Xu###
(716464, 716464)
 In the case of Hparallel ab, the magnetization increasesstep-like to 6.6 muB/f.u.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 186, 'K', 4],[139.0, 19, 'K', 4],[69.0, 2, 'K', 2]

B
###Metamagnetic transition in EuFe$_2$As$_2$ single crystals|Shuai Jiang,Yongkang Luo,Zhi Ren,Zengwei Zhu,Cao Wang,Xiangfan Xu,Qian Tao,Guanghan Cao,Zhu'an Xu###
(716486, 716486)
 In the case of Hparallel ab, the magnetization increasesstep-like to 6.6 muB/f.u.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 186, 'K', 4],[161.0, 19, 'K', 4],[91.0, 2, 'K', 2]

B
###Metamagnetic transition in EuFe$_2$As$_2$ single crystals|Shuai Jiang,Yongkang Luo,Zhi Ren,Zengwei Zhu,Cao Wang,Xiangfan Xu,Qian Tao,Guanghan Cao,Zhu'an Xu###
(716526, 716526)
 A metamagneticphase was identified with the saturated moments of 4.4 muB/f.u.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[228.0, 186, 'K', 6],[201.0, 19, 'K', 6],[131.0, 2, 'K', 4]

Eu2
###Metamagnetic transition in EuFe$_2$As$_2$ single crystals|Shuai Jiang,Yongkang Luo,Zhi Ren,Zengwei Zhu,Cao Wang,Xiangfan Xu,Qian Tao,Guanghan Cao,Zhu'an Xu###
(716562, 716563)
 Themetamagnetic transition accompanies with negative in-plane magnetoresistance,reflecting the influence of Eu2 moments ordering on the electricalconduction of FeAs layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[264.0, 186, 'K', 7],[237.0, 19, 'K', 7],[167.0, 2, 'K', 5]

FeAs
###Metamagnetic transition in EuFe$_2$As$_2$ single crystals|Shuai Jiang,Yongkang Luo,Zhi Ren,Zengwei Zhu,Cao Wang,Xiangfan Xu,Qian Tao,Guanghan Cao,Zhu'an Xu###
(716580, 716581)
 Themetamagnetic transition accompanies with negative in-plane magnetoresistance,reflecting the influence of Eu2 moments ordering on the electricalconduction of FeAs layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[282.0, 186, 'K', 7],[255.0, 19, 'K', 7],[185.0, 2, 'K', 5]

F
###Metamagnetic transition in EuFe$_2$As$_2$ single crystals|Shuai Jiang,Yongkang Luo,Zhi Ren,Zengwei Zhu,Cao Wang,Xiangfan Xu,Qian Tao,Guanghan Cao,Zhu'an Xu###
(716622, 716622)
 The results were explained in terms ofspin-reorientation and spin-reversal based on an A-type AFM<missing VAR> structure forEu2 spins.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[324.0, 186, 'K', 8],[297.0, 19, 'K', 8],[227.0, 2, 'K', 6]

Eu2
###Metamagnetic transition in EuFe$_2$As$_2$ single crystals|Shuai Jiang,Yongkang Luo,Zhi Ren,Zengwei Zhu,Cao Wang,Xiangfan Xu,Qian Tao,Guanghan Cao,Zhu'an Xu###
(716630, 716631)
 The results were explained in terms ofspin-reorientation and spin-reversal based on an A-type AFM<missing VAR> structure forEu2 spins.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[332.0, 186, 'K', 8],[305.0, 19, 'K', 8],[235.0, 2, 'K', 6]

RuSr2Gd1-x
###The magnetic state of 1212-type ruthenocuprate in magnetocaloric and magnetoresistivity measurements of polycrystalline samples of RuSr2Gd1-xCexCu2O8 and Ru1-xSr2GdCu2O8|Piotr W Klamut,Tomasz Plackowski###
(716691, 716697)
The magnetic state of 1212-type ruthenocuprate in magnetocaloric and magnetoresistivity measurements of polycrystalline samples of RuSr2Gd1-xCexCu2O8 and Ru1-xSr2GdCu2O8.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[46.0, 0, ',', 1],[74.0, 0.07, ',', 1],[163.0, 0, '<', 2]

Cu2O8
###The magnetic state of 1212-type ruthenocuprate in magnetocaloric and magnetoresistivity measurements of polycrystalline samples of RuSr2Gd1-xCexCu2O8 and Ru1-xSr2GdCu2O8|Piotr W Klamut,Tomasz Plackowski###
(716699, 716702)
The magnetic state of 1212-type ruthenocuprate in magnetocaloric and magnetoresistivity measurements of polycrystalline samples of RuSr2Gd1-xCexCu2O8 and Ru1-xSr2GdCu2O8.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 0, ',', 1],[69.0, 0.07, ',', 1],[158.0, 0, '<', 2]

Ru1-xSr2GdCu2O8
###The magnetic state of 1212-type ruthenocuprate in magnetocaloric and magnetoresistivity measurements of polycrystalline samples of RuSr2Gd1-xCexCu2O8 and Ru1-xSr2GdCu2O8|Piotr W Klamut,Tomasz Plackowski###
(716706, 716716)
The magnetic state of 1212-type ruthenocuprate in magnetocaloric and magnetoresistivity measurements of polycrystalline samples of RuSr2Gd1-xCexCu2O8 and Ru1-xSr2GdCu2O8.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[27.0, 0, ',', 1],[55.0, 0.07, ',', 1],[144.0, 0, '<', 2]

Ru1-xSr2GdCu2O8
###The magnetic state of 1212-type ruthenocuprate in magnetocaloric and magnetoresistivity measurements of polycrystalline samples of RuSr2Gd1-xCexCu2O8 and Ru1-xSr2GdCu2O8|Piotr W Klamut,Tomasz Plackowski###
(716729, 716739)
 The magnetic properties of superconducting Ru1-xSr2GdCu2O8 (x<missing VAR>0, 0.02) andnon-superconducting RuSr2Gd1-xCexCu2O8 (x<missing VAR>0.07, 0.1) were investigated by meansof magnetocaloric experiments with complementary magnetoresistivity and acsusceptibility measurements.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[4.0, 0, ',', 0],[32.0, 0.07, ',', 0],[121.0, 0, '<', 1]

RuSr2Gd1-x
###The magnetic state of 1212-type ruthenocuprate in magnetocaloric and magnetoresistivity measurements of polycrystalline samples of RuSr2Gd1-xCexCu2O8 and Ru1-xSr2GdCu2O8|Piotr W Klamut,Tomasz Plackowski###
(716756, 716762)
 The magnetic properties of superconducting Ru1-xSr2GdCu2O8 (x<missing VAR>0, 0.02) andnon-superconducting RuSr2Gd1-xCexCu2O8 (x<missing VAR>0.07, 0.1) were investigated by meansof magnetocaloric experiments with complementary magnetoresistivity and acsusceptibility measurements.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[13.0, 0, ',', 0],[9.0, 0.07, ',', 0],[98.0, 0, '<', 1]

Cu2O8
###The magnetic state of 1212-type ruthenocuprate in magnetocaloric and magnetoresistivity measurements of polycrystalline samples of RuSr2Gd1-xCexCu2O8 and Ru1-xSr2GdCu2O8|Piotr W Klamut,Tomasz Plackowski###
(716764, 716767)
 The magnetic properties of superconducting Ru1-xSr2GdCu2O8 (x<missing VAR>0, 0.02) andnon-superconducting RuSr2Gd1-xCexCu2O8 (x<missing VAR>0.07, 0.1) were investigated by meansof magnetocaloric experiments with complementary magnetoresistivity and acsusceptibility measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 0, ',', 0],[4.0, 0.07, ',', 0],[93.0, 0, '<', 1]

(B)
###The magnetic state of 1212-type ruthenocuprate in magnetocaloric and magnetoresistivity measurements of polycrystalline samples of RuSr2Gd1-xCexCu2O8 and Ru1-xSr2GdCu2O8|Piotr W Klamut,Tomasz Plackowski###
(716818, 716820)
 The isothermal magnetocaloric coefficient MT(B)assumes positive values in a broad range of temperatures (20K<T<missing VAR><231 K) andmagnetic fields (0<B<13 T), i.e.
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 0, ',', 1],[47.0, 0.07, ',', 1],[40.0, 0, '<', 0]

K
###The magnetic state of 1212-type ruthenocuprate in magnetocaloric and magnetoresistivity measurements of polycrystalline samples of RuSr2Gd1-xCexCu2O8 and Ru1-xSr2GdCu2O8|Piotr W Klamut,Tomasz Plackowski###
(716843, 716843)
 The isothermal magnetocaloric coefficient MT(B)assumes positive values in a broad range of temperatures (20K<T<missing VAR><231 K) andmagnetic fields (0<B<13 T), i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 0, ',', 1],[72.0, 0.07, ',', 1],[17.0, 0, '<', 0]

K
###The magnetic state of 1212-type ruthenocuprate in magnetocaloric and magnetoresistivity measurements of polycrystalline samples of RuSr2Gd1-xCexCu2O8 and Ru1-xSr2GdCu2O8|Piotr W Klamut,Tomasz Plackowski###
(716849, 716849)
 The isothermal magnetocaloric coefficient MT(B)assumes positive values in a broad range of temperatures (20K<T<missing VAR><231 K) andmagnetic fields (0<B<13 T), i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 0, ',', 1],[78.0, 0.07, ',', 1],[11.0, 0, '<', 0]

B
###The magnetic state of 1212-type ruthenocuprate in magnetocaloric and magnetoresistivity measurements of polycrystalline samples of RuSr2Gd1-xCexCu2O8 and Ru1-xSr2GdCu2O8|Piotr W Klamut,Tomasz Plackowski###
(716862, 716862)
 The isothermal magnetocaloric coefficient MT(B)assumes positive values in a broad range of temperatures (20K<T<missing VAR><231 K) andmagnetic fields (0<B<13 T), i.e.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 0, ',', 1],[91.0, 0.07, ',', 1],[2.0, 0, '<', 0]

K
###The magnetic state of 1212-type ruthenocuprate in magnetocaloric and magnetoresistivity measurements of polycrystalline samples of RuSr2Gd1-xCexCu2O8 and Ru1-xSr2GdCu2O8|Piotr W Klamut,Tomasz Plackowski###
(716893, 716893)
 also in the magnetically ordered state(Tm132 K for RuSr2GdCu2O8 and Tm150 K for RuSr2Gd0.93Ce0.07Cu2O8),which indicates no gain in the systems<missing VAR> magnetic entropy with increasingmagnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 0, ',', 2],[122.0, 0.07, ',', 2],[33.0, 0, '<', 1]

RuSr2GdCu2O8
###The magnetic state of 1212-type ruthenocuprate in magnetocaloric and magnetoresistivity measurements of polycrystalline samples of RuSr2Gd1-xCexCu2O8 and Ru1-xSr2GdCu2O8|Piotr W Klamut,Tomasz Plackowski###
(716897, 716904)
 also in the magnetically ordered state(Tm132 K for RuSr2GdCu2O8 and Tm150 K for RuSr2Gd0.93Ce0.07Cu2O8),which indicates no gain in the systems<missing VAR> magnetic entropy with increasingmagnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0.07142857142857142,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07142857142857142,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 0, ',', 2],[126.0, 0.07, ',', 2],[37.0, 0, '<', 1]

K
###The magnetic state of 1212-type ruthenocuprate in magnetocaloric and magnetoresistivity measurements of polycrystalline samples of RuSr2Gd1-xCexCu2O8 and Ru1-xSr2GdCu2O8|Piotr W Klamut,Tomasz Plackowski###
(716912, 716912)
 also in the magnetically ordered state(Tm132 K for RuSr2GdCu2O8 and Tm150 K for RuSr2Gd0.93Ce0.07Cu2O8),which indicates no gain in the systems<missing VAR> magnetic entropy with increasingmagnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 0, ',', 2],[141.0, 0.07, ',', 2],[52.0, 0, '<', 1]

O8
###The magnetic state of 1212-type ruthenocuprate in magnetocaloric and magnetoresistivity measurements of polycrystalline samples of RuSr2Gd1-xCexCu2O8 and Ru1-xSr2GdCu2O8|Piotr W Klamut,Tomasz Plackowski###
(716925, 716926)
 also in the magnetically ordered state(Tm132 K for RuSr2GdCu2O8 and Tm150 K for RuSr2Gd0.93Ce0.07Cu2O8),which indicates no gain in the systems<missing VAR> magnetic entropy with increasingmagnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[182.0, 0, ',', 2],[154.0, 0.07, ',', 2],[65.0, 0, '<', 1]

(B)
###The magnetic state of 1212-type ruthenocuprate in magnetocaloric and magnetoresistivity measurements of polycrystalline samples of RuSr2Gd1-xCexCu2O8 and Ru1-xSr2GdCu2O8|Piotr W Klamut,Tomasz Plackowski###
(716970, 716972)
 The maximum in the MT(B) dependence was observed forRuSr2GdCu2O8 in a temperature vicinity of Tm, which indicates aferromagnetic character of the accessed magnetic correlations.
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[227.0, 0, ',', 3],[199.0, 0.07, ',', 3],[110.0, 0, '<', 2]

RuSr2GdCu2O8
###The magnetic state of 1212-type ruthenocuprate in magnetocaloric and magnetoresistivity measurements of polycrystalline samples of RuSr2Gd1-xCexCu2O8 and Ru1-xSr2GdCu2O8|Piotr W Klamut,Tomasz Plackowski###
(716983, 716990)
 The maximum in the MT(B) dependence was observed forRuSr2GdCu2O8 in a temperature vicinity of Tm, which indicates aferromagnetic character of the accessed magnetic correlations.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0.07142857142857142,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07142857142857142,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[240.0, 0, ',', 3],[212.0, 0.07, ',', 3],[123.0, 0, '<', 2]

No
###The magnetic state of 1212-type ruthenocuprate in magnetocaloric and magnetoresistivity measurements of polycrystalline samples of RuSr2Gd1-xCexCu2O8 and Ru1-xSr2GdCu2O8|Piotr W Klamut,Tomasz Plackowski###
(717028, 717028)
 No spontaneousferromagnetic order was revealed as the MT assumes limiting zero values atzero magnetic field for the whole range of investigated temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0
[285.0, 0, ',', 4],[257.0, 0.07, ',', 4],[168.0, 0, '<', 3]

Ru
###The magnetic state of 1212-type ruthenocuprate in magnetocaloric and magnetoresistivity measurements of polycrystalline samples of RuSr2Gd1-xCexCu2O8 and Ru1-xSr2GdCu2O8|Piotr W Klamut,Tomasz Plackowski###
(717131, 717131)
Temperature dependencies of the specific heat reveal the magnetic-field-inducedpositive temperature shift of the anomaly associated with the magnetictransition in the Ru spin system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[388.0, 0, ',', 5],[360.0, 0.07, ',', 5],[271.0, 0, '<', 4]

(B)
###The magnetic state of 1212-type ruthenocuprate in magnetocaloric and magnetoresistivity measurements of polycrystalline samples of RuSr2Gd1-xCexCu2O8 and Ru1-xSr2GdCu2O8|Piotr W Klamut,Tomasz Plackowski###
(717142, 717144)
 The MT(B) dependencies and themagnetoresistivity data suggest that the magnetic system may be inhomogeneous.
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[399.0, 0, ',', 6],[371.0, 0.07, ',', 6],[282.0, 0, '<', 5]

GaMnAs
###Perspectives in spintronics: magnetic resonant tunneling, spin-orbit coupling, and GaMnAs|C. Ertler,A. Matos-Abiague,M. Gmitra,M. Turek,J. Fabian###
(717204, 717206)
Perspectives in spintronics magnetic resonant tunneling, spin-orbit coupling, and GaMnAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Perspectives in spintronics: magnetic resonant tunneling, spin-orbit coupling, and GaMnAs|C. Ertler,A. Matos-Abiague,M. Gmitra,M. Turek,J. Fabian###
(717305, 717305)
 While branching into new areasand creating new themes over the past years, the principal goals remain thespin and magnetic control of the electrical properties, essentially the I-Vcharacteristics, and vice versa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Perspectives in spintronics: magnetic resonant tunneling, spin-orbit coupling, and GaMnAs|C. Ertler,A. Matos-Abiague,M. Gmitra,M. Turek,J. Fabian###
(717307, 717307)
 While branching into new areasand creating new themes over the past years, the principal goals remain thespin and magnetic control of the electrical properties, essentially the I-Vcharacteristics, and vice versa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaMnAs
###Perspectives in spintronics: magnetic resonant tunneling, spin-orbit coupling, and GaMnAs|C. Ertler,A. Matos-Abiague,M. Gmitra,M. Turek,J. Fabian###
(717366, 717368)
 One challenge is to find niche applications for ferromagneticsemiconductors, such as GaMnAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/GaAs
###Perspectives in spintronics: magnetic resonant tunneling, spin-orbit coupling, and GaMnAs|C. Ertler,A. Matos-Abiague,M. Gmitra,M. Turek,J. Fabian###
(717544, 717547)
 We also discuss the phenomenon oftunneling anisotropic magnetoresistance in Fe/GaAs junctions by introducing theconcept of the spin-orbit coupling field, as an analog of such fields inall-semiconductor junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

GaMnAs
###Perspectives in spintronics: magnetic resonant tunneling, spin-orbit coupling, and GaMnAs|C. Ertler,A. Matos-Abiague,M. Gmitra,M. Turek,J. Fabian###
(717617, 717619)
 Finally, we look at fundamental electronic andoptical properties of GaMnAs by employing reasonable tight-binding models tostudy disorder efiects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CeFeAsO
###Influence of the rare-earth element on the effects of the structural and magnetic phase transitions in CeFeAsO, PrFeAsO, and NdFeAsO|Michael A. McGuire,Raphael P. Hermann,Athena S. Sefat,Brian C. Sales,Rongying Jin,David Mandrus,Fernande Grandjean,Gary J. Long###
(717685, 717688)
Influence of the rare-earth element on the effects of the structural and magnetic phase transitions in CeFeAsO, PrFeAsO, and NdFeAsO.
Featurization terminated normally.
0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PrFeAsO
###Influence of the rare-earth element on the effects of the structural and magnetic phase transitions in CeFeAsO, PrFeAsO, and NdFeAsO|Michael A. McGuire,Raphael P. Hermann,Athena S. Sefat,Brian C. Sales,Rongying Jin,David Mandrus,Fernande Grandjean,Gary J. Long###
(717691, 717694)
Influence of the rare-earth element on the effects of the structural and magnetic phase transitions in CeFeAsO, PrFeAsO, and NdFeAsO.
Featurization terminated normally.
0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NdFeAsO
###Influence of the rare-earth element on the effects of the structural and magnetic phase transitions in CeFeAsO, PrFeAsO, and NdFeAsO|Michael A. McGuire,Raphael P. Hermann,Athena S. Sefat,Brian C. Sales,Rongying Jin,David Mandrus,Fernande Grandjean,Gary J. Long###
(717699, 717702)
Influence of the rare-earth element on the effects of the structural and magnetic phase transitions in CeFeAsO, PrFeAsO, and NdFeAsO.
Featurization terminated normally.
0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CeFeAsO
###Influence of the rare-earth element on the effects of the structural and magnetic phase transitions in CeFeAsO, PrFeAsO, and NdFeAsO|Michael A. McGuire,Raphael P. Hermann,Athena S. Sefat,Brian C. Sales,Rongying Jin,David Mandrus,Fernande Grandjean,Gary J. Long###
(717734, 717737)
 We present results of transport and magnetic properties and heat capacitymeasurements on polycrystalline CeFeAsO, PrFeAsO, and NdFeAsO.
Featurization terminated normally.
0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PrFeAsO
###Influence of the rare-earth element on the effects of the structural and magnetic phase transitions in CeFeAsO, PrFeAsO, and NdFeAsO|Michael A. McGuire,Raphael P. Hermann,Athena S. Sefat,Brian C. Sales,Rongying Jin,David Mandrus,Fernande Grandjean,Gary J. Long###
(717740, 717743)
 We present results of transport and magnetic properties and heat capacitymeasurements on polycrystalline CeFeAsO, PrFeAsO, and NdFeAsO.
Featurization terminated normally.
0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NdFeAsO
###Influence of the rare-earth element on the effects of the structural and magnetic phase transitions in CeFeAsO, PrFeAsO, and NdFeAsO|Michael A. McGuire,Raphael P. Hermann,Athena S. Sefat,Brian C. Sales,Rongying Jin,David Mandrus,Fernande Grandjean,Gary J. Long###
(717748, 717751)
 We present results of transport and magnetic properties and heat capacitymeasurements on polycrystalline CeFeAsO, PrFeAsO, and NdFeAsO.
Featurization terminated normally.
0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaFeAsO
###Influence of the rare-earth element on the effects of the structural and magnetic phase transitions in CeFeAsO, PrFeAsO, and NdFeAsO|Michael A. McGuire,Raphael P. Hermann,Athena S. Sefat,Brian C. Sales,Rongying Jin,David Mandrus,Fernande Grandjean,Gary J. Long###
(717978, 717981)
 Results are compared to recent reports for LaFeAsO, and systematicvariations in properties as the identity of Ln is changed are observed anddiscussed.
Featurization terminated normally.
0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Influence of the rare-earth element on the effects of the structural and magnetic phase transitions in CeFeAsO, PrFeAsO, and NdFeAsO|Michael A. McGuire,Raphael P. Hermann,Athena S. Sefat,Brian C. Sales,Rongying Jin,David Mandrus,Fernande Grandjean,Gary J. Long###
(718019, 718019)
 As Ln progresses across the rare-earth series from La to Nd, anincrease in the hole contributions to Seebeck coefficient, and increases inmagnetoresistance and the Hall coefficient are observed in the low temperaturephase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La
###Influence of the rare-earth element on the effects of the structural and magnetic phase transitions in CeFeAsO, PrFeAsO, and NdFeAsO|Michael A. McGuire,Raphael P. Hermann,Athena S. Sefat,Brian C. Sales,Rongying Jin,David Mandrus,Fernande Grandjean,Gary J. Long###
(718037, 718037)
 As Ln progresses across the rare-earth series from La to Nd, anincrease in the hole contributions to Seebeck coefficient, and increases inmagnetoresistance and the Hall coefficient are observed in the low temperaturephase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nd
###Influence of the rare-earth element on the effects of the structural and magnetic phase transitions in CeFeAsO, PrFeAsO, and NdFeAsO|Michael A. McGuire,Raphael P. Hermann,Athena S. Sefat,Brian C. Sales,Rongying Jin,David Mandrus,Fernande Grandjean,Gary J. Long###
(718041, 718041)
 As Ln progresses across the rare-earth series from La to Nd, anincrease in the hole contributions to Seebeck coefficient, and increases inmagnetoresistance and the Hall coefficient are observed in the low temperaturephase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Influence of the rare-earth element on the effects of the structural and magnetic phase transitions in CeFeAsO, PrFeAsO, and NdFeAsO|Michael A. McGuire,Raphael P. Hermann,Athena S. Sefat,Brian C. Sales,Rongying Jin,David Mandrus,Fernande Grandjean,Gary J. Long###
(718132, 718132)
 Analysis of hyperfine fields at the iron nuclei determined fromMossbauer spectra indicates that the moment on Fe in the orthorhombic phase isnearly independent of the identity of Ln, in apparent contrast to reports ofpowder neutron diffraction refinements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni80Fe20
###Stray-fields based features observed for low and high magnetic fields in Ni$_{80}$Fe$_{20}$-Nb-Ni$_{80}$Fe$_{20}$ trilayers|D. Stamopoulos,E. Manios,N. Papachristos,I. Aristomenopoulou###
(718214, 718217)
Stray-fields based features observed for low and high magnetic fields in Ni80Fe20-Nb-Ni80Fe20 trilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nb
###Stray-fields based features observed for low and high magnetic fields in Ni$_{80}$Fe$_{20}$-Nb-Ni$_{80}$Fe$_{20}$ trilayers|D. Stamopoulos,E. Manios,N. Papachristos,I. Aristomenopoulou###
(718219, 718219)
Stray-fields based features observed for low and high magnetic fields in Ni80Fe20-Nb-Ni80Fe20 trilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni80Fe20
###Stray-fields based features observed for low and high magnetic fields in Ni$_{80}$Fe$_{20}$-Nb-Ni$_{80}$Fe$_{20}$ trilayers|D. Stamopoulos,E. Manios,N. Papachristos,I. Aristomenopoulou###
(718221, 718224)
Stray-fields based features observed for low and high magnetic fields in Ni80Fe20-Nb-Ni80Fe20 trilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nb
###Stray-fields based features observed for low and high magnetic fields in Ni$_{80}$Fe$_{20}$-Nb-Ni$_{80}$Fe$_{20}$ trilayers|D. Stamopoulos,E. Manios,N. Papachristos,I. Aristomenopoulou###
(718278, 718278)
 We report on the influence of stray fields for both low and high magneticfields applied parallel to trilayers consisting of a low-T<missing VAR> Nb interlayer andtwo outer Ni Fe layers having in-plane anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Stray-fields based features observed for low and high magnetic fields in Ni$_{80}$Fe$_{20}$-Nb-Ni$_{80}$Fe$_{20}$ trilayers|D. Stamopoulos,E. Manios,N. Papachristos,I. Aristomenopoulou###
(718289, 718289)
 We report on the influence of stray fields for both low and high magneticfields applied parallel to trilayers consisting of a low-T<missing VAR> Nb interlayer andtwo outer Ni Fe layers having in-plane anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Stray-fields based features observed for low and high magnetic fields in Ni$_{80}$Fe$_{20}$-Nb-Ni$_{80}$Fe$_{20}$ trilayers|D. Stamopoulos,E. Manios,N. Papachristos,I. Aristomenopoulou###
(718291, 718291)
 We report on the influence of stray fields for both low and high magneticfields applied parallel to trilayers consisting of a low-T<missing VAR> Nb interlayer andtwo outer Ni Fe layers having in-plane anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Stray-fields based features observed for low and high magnetic fields in Ni$_{80}$Fe$_{20}$-Nb-Ni$_{80}$Fe$_{20}$ trilayers|D. Stamopoulos,E. Manios,N. Papachristos,I. Aristomenopoulou###
(718304, 718304)
 At low magnetic fields thesetrilayers exhibit a pronounced magnetoresistance effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Stray-fields based features observed for low and high magnetic fields in Ni$_{80}$Fe$_{20}$-Nb-Ni$_{80}$Fe$_{20}$ trilayers|D. Stamopoulos,E. Manios,N. Papachristos,I. Aristomenopoulou###
(718345, 718345)
 Its dynamic transportbehavior is presented through detailed I-V characteristics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Stray-fields based features observed for low and high magnetic fields in Ni$_{80}$Fe$_{20}$-Nb-Ni$_{80}$Fe$_{20}$ trilayers|D. Stamopoulos,E. Manios,N. Papachristos,I. Aristomenopoulou###
(718347, 718347)
 Its dynamic transportbehavior is presented through detailed I-V characteristics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nb
###Stray-fields based features observed for low and high magnetic fields in Ni$_{80}$Fe$_{20}$-Nb-Ni$_{80}$Fe$_{20}$ trilayers|D. Stamopoulos,E. Manios,N. Papachristos,I. Aristomenopoulou###
(718439, 718439)
 These data clearlyshow that below T<missing VAR> and for low magnetic fields the transport properties of theNb interlayer are influenced by transverse stray-fields that motivatesubsequent transverse magnetic coupling of the outer Ni Fe layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Stray-fields based features observed for low and high magnetic fields in Ni$_{80}$Fe$_{20}$-Nb-Ni$_{80}$Fe$_{20}$ trilayers|D. Stamopoulos,E. Manios,N. Papachristos,I. Aristomenopoulou###
(718474, 718474)
 These data clearlyshow that below T<missing VAR> and for low magnetic fields the transport properties of theNb interlayer are influenced by transverse stray-fields that motivatesubsequent transverse magnetic coupling of the outer Ni Fe layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Stray-fields based features observed for low and high magnetic fields in Ni$_{80}$Fe$_{20}$-Nb-Ni$_{80}$Fe$_{20}$ trilayers|D. Stamopoulos,E. Manios,N. Papachristos,I. Aristomenopoulou###
(718476, 718476)
 These data clearlyshow that below T<missing VAR> and for low magnetic fields the transport properties of theNb interlayer are influenced by transverse stray-fields that motivatesubsequent transverse magnetic coupling of the outer Ni Fe layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nb
###Stray-fields based features observed for low and high magnetic fields in Ni$_{80}$Fe$_{20}$-Nb-Ni$_{80}$Fe$_{20}$ trilayers|D. Stamopoulos,E. Manios,N. Papachristos,I. Aristomenopoulou###
(718679, 718679)
 Asimilar process is observed in both Nb-Ni Fe bilayers and Nb single layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Stray-fields based features observed for low and high magnetic fields in Ni$_{80}$Fe$_{20}$-Nb-Ni$_{80}$Fe$_{20}$ trilayers|D. Stamopoulos,E. Manios,N. Papachristos,I. Aristomenopoulou###
(718681, 718681)
 Asimilar process is observed in both Nb-Ni Fe bilayers and Nb single layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Stray-fields based features observed for low and high magnetic fields in Ni$_{80}$Fe$_{20}$-Nb-Ni$_{80}$Fe$_{20}$ trilayers|D. Stamopoulos,E. Manios,N. Papachristos,I. Aristomenopoulou###
(718683, 718683)
 Asimilar process is observed in both Nb-Ni Fe bilayers and Nb single layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nb
###Stray-fields based features observed for low and high magnetic fields in Ni$_{80}$Fe$_{20}$-Nb-Ni$_{80}$Fe$_{20}$ trilayers|D. Stamopoulos,E. Manios,N. Papachristos,I. Aristomenopoulou###
(718689, 718689)
 Asimilar process is observed in both Nb-Ni Fe bilayers and Nb single layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeCoB/MgO/FeCoB
###Oxide layer boron leads to reduced symmetry spin filtering magnetic tunnel junctions|Derek A. Stewart###
(718816, 718825)
 Experimental studies of FeCoB/MgO/FeCoB tunnel junctions indicate that borondiffuses into MgO during rf-sputtering and forms polycrystalline Mg-B-Oregions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

MgO
###Oxide layer boron leads to reduced symmetry spin filtering magnetic tunnel junctions|Derek A. Stewart###
(718842, 718843)
 Experimental studies of FeCoB/MgO/FeCoB tunnel junctions indicate that borondiffuses into MgO during rf-sputtering and forms polycrystalline Mg-B-Oregions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mg
###Oxide layer boron leads to reduced symmetry spin filtering magnetic tunnel junctions|Derek A. Stewart###
(718857, 718857)
 Experimental studies of FeCoB/MgO/FeCoB tunnel junctions indicate that borondiffuses into MgO during rf-sputtering and forms polycrystalline Mg-B-Oregions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Oxide layer boron leads to reduced symmetry spin filtering magnetic tunnel junctions|Derek A. Stewart###
(718859, 718859)
 Experimental studies of FeCoB/MgO/FeCoB tunnel junctions indicate that borondiffuses into MgO during rf-sputtering and forms polycrystalline Mg-B-Oregions.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Oxide layer boron leads to reduced symmetry spin filtering magnetic tunnel junctions|Derek A. Stewart###
(718861, 718861)
 Experimental studies of FeCoB/MgO/FeCoB tunnel junctions indicate that borondiffuses into MgO during rf-sputtering and forms polycrystalline Mg-B-Oregions.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mg
###Oxide layer boron leads to reduced symmetry spin filtering magnetic tunnel junctions|Derek A. Stewart###
(718906, 718906)
 However the crystal structure of the Mg-B-O region remainsunknown.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Oxide layer boron leads to reduced symmetry spin filtering magnetic tunnel junctions|Derek A. Stewart###
(718908, 718908)
 However the crystal structure of the Mg-B-O region remainsunknown.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Oxide layer boron leads to reduced symmetry spin filtering magnetic tunnel junctions|Derek A. Stewart###
(718910, 718910)
 However the crystal structure of the Mg-B-O region remainsunknown.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Oxide layer boron leads to reduced symmetry spin filtering magnetic tunnel junctions|Derek A. Stewart###
(718929, 718929)
 Using density functional techniques, I examine three potential Mg(B)oxides including Mg2B2O5 (monoclinic and triclinic) and theorthorhombic mineral Kotoite (Mg3B2O6).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mg(B)
###Oxide layer boron leads to reduced symmetry spin filtering magnetic tunnel junctions|Derek A. Stewart###
(718937, 718940)
 Using density functional techniques, I examine three potential Mg(B)oxides including Mg2B2O5 (monoclinic and triclinic) and theorthorhombic mineral Kotoite (Mg3B2O6).
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mg2B2O5
###Oxide layer boron leads to reduced symmetry spin filtering magnetic tunnel junctions|Derek A. Stewart###
(718947, 718952)
 Using density functional techniques, I examine three potential Mg(B)oxides including Mg2B2O5 (monoclinic and triclinic) and theorthorhombic mineral Kotoite (Mg3B2O6).
Featurization terminated normally.
0,0,0,0,0.2222222222222222,0,0,0.5555555555555556,0,0,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(Mg3B2O6)
###Oxide layer boron leads to reduced symmetry spin filtering magnetic tunnel junctions|Derek A. Stewart###
(718973, 718980)
 Using density functional techniques, I examine three potential Mg(B)oxides including Mg2B2O5 (monoclinic and triclinic) and theorthorhombic mineral Kotoite (Mg3B2O6).
Featurization successful!
0,0,0,0,0.18181818181818182,0,0,0.5454545454545454,0,0,0,0.2727272727272727,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Oxide layer boron leads to reduced symmetry spin filtering magnetic tunnel junctions|Derek A. Stewart###
(719036, 719037)
 The (100) surface of Kotoite has agood lattice match with (001) MgO and could template neighboring FeCo into bcclayers during annealing.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeCo
###Oxide layer boron leads to reduced symmetry spin filtering magnetic tunnel junctions|Derek A. Stewart###
(719047, 719048)
 The (100) surface of Kotoite has agood lattice match with (001) MgO and could template neighboring FeCo into bcclayers during annealing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C2
###Oxide layer boron leads to reduced symmetry spin filtering magnetic tunnel junctions|Derek A. Stewart###
(719081, 719082)
 Complex band structure analysis of Kotoite shows thatthe C2v<missing VAR> tildeDelta1 band has a much smaller imaginary k<missing VAR> componentthan the C2v<missing VAR> tildeDelta4 band.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C2
###Oxide layer boron leads to reduced symmetry spin filtering magnetic tunnel junctions|Derek A. Stewart###
(719110, 719111)
 Complex band structure analysis of Kotoite shows thatthe C2v<missing VAR> tildeDelta1 band has a much smaller imaginary k<missing VAR> componentthan the C2v<missing VAR> tildeDelta4 band.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeCo
###Oxide layer boron leads to reduced symmetry spin filtering magnetic tunnel junctions|Derek A. Stewart###
(719144, 719145)
 Based on symmetry analysis, themajority spin Delta1 band in FeCo should couple well with the KotoitetildeDelta1 band, while the minority FeCo Delta5 will couplepartially with the tildeDelta4 band.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeCo
###Oxide layer boron leads to reduced symmetry spin filtering magnetic tunnel junctions|Derek A. Stewart###
(719173, 719174)
 Based on symmetry analysis, themajority spin Delta1 band in FeCo should couple well with the KotoitetildeDelta1 band, while the minority FeCo Delta5 will couplepartially with the tildeDelta4 band.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La2
###Magnetotransport in polycrystalline La$_{2/3}$Sr$_{1/3}$MnO$_{3}$ thin films of controlled granularity|P. K. Muduli,Gyanendra Singh,R. Sharma,R. C. Budhani###
(719252, 719253)
Magnetotransport in polycrystalline La2/3Sr1/3MnO3 thin films of controlled granularity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 700, 'and', 2],[381.0, 20, '%', 6],[528.0, 3, 'd', 8]

Sr1
###Magnetotransport in polycrystalline La$_{2/3}$Sr$_{1/3}$MnO$_{3}$ thin films of controlled granularity|P. K. Muduli,Gyanendra Singh,R. Sharma,R. C. Budhani###
(719256, 719257)
Magnetotransport in polycrystalline La2/3Sr1/3MnO3 thin films of controlled granularity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 700, 'and', 2],[377.0, 20, '%', 6],[524.0, 3, 'd', 8]

MnO3
###Magnetotransport in polycrystalline La$_{2/3}$Sr$_{1/3}$MnO$_{3}$ thin films of controlled granularity|P. K. Muduli,Gyanendra Singh,R. Sharma,R. C. Budhani###
(719260, 719262)
Magnetotransport in polycrystalline La2/3Sr1/3MnO3 thin films of controlled granularity.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 700, 'and', 2],[372.0, 20, '%', 6],[519.0, 3, 'd', 8]

La2
###Magnetotransport in polycrystalline La$_{2/3}$Sr$_{1/3}$MnO$_{3}$ thin films of controlled granularity|P. K. Muduli,Gyanendra Singh,R. Sharma,R. C. Budhani###
(719277, 719278)
 Polycrystalline La2/3Sr1/3MnO3 (LSMO) thin films weresynthesized by pulsed laser ablation on single crystal (100) yttria-stabilizedzirconia (YSZ) substrates to investigate the mechanism of magneto-transport ina granular manganite.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 700, 'and', 1],[356.0, 20, '%', 5],[503.0, 3, 'd', 7]

Sr1
###Magnetotransport in polycrystalline La$_{2/3}$Sr$_{1/3}$MnO$_{3}$ thin films of controlled granularity|P. K. Muduli,Gyanendra Singh,R. Sharma,R. C. Budhani###
(719281, 719282)
 Polycrystalline La2/3Sr1/3MnO3 (LSMO) thin films weresynthesized by pulsed laser ablation on single crystal (100) yttria-stabilizedzirconia (YSZ) substrates to investigate the mechanism of magneto-transport ina granular manganite.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 700, 'and', 1],[352.0, 20, '%', 5],[499.0, 3, 'd', 7]

MnO3
###Magnetotransport in polycrystalline La$_{2/3}$Sr$_{1/3}$MnO$_{3}$ thin films of controlled granularity|P. K. Muduli,Gyanendra Singh,R. Sharma,R. C. Budhani###
(719285, 719287)
 Polycrystalline La2/3Sr1/3MnO3 (LSMO) thin films weresynthesized by pulsed laser ablation on single crystal (100) yttria-stabilizedzirconia (YSZ) substrates to investigate the mechanism of magneto-transport ina granular manganite.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 700, 'and', 1],[347.0, 20, '%', 5],[494.0, 3, 'd', 7]

O
###Magnetotransport in polycrystalline La$_{2/3}$Sr$_{1/3}$MnO$_{3}$ thin films of controlled granularity|P. K. Muduli,Gyanendra Singh,R. Sharma,R. C. Budhani###
(719293, 719293)
 Polycrystalline La2/3Sr1/3MnO3 (LSMO) thin films weresynthesized by pulsed laser ablation on single crystal (100) yttria-stabilizedzirconia (YSZ) substrates to investigate the mechanism of magneto-transport ina granular manganite.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 700, 'and', 1],[341.0, 20, '%', 5],[488.0, 3, 'd', 7]

YS
###Magnetotransport in polycrystalline La$_{2/3}$Sr$_{1/3}$MnO$_{3}$ thin films of controlled granularity|P. K. Muduli,Gyanendra Singh,R. Sharma,R. C. Budhani###
(719331, 719332)
 Polycrystalline La2/3Sr1/3MnO3 (LSMO) thin films weresynthesized by pulsed laser ablation on single crystal (100) yttria-stabilizedzirconia (YSZ) substrates to investigate the mechanism of magneto-transport ina granular manganite.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 700, 'and', 1],[302.0, 20, '%', 5],[449.0, 3, 'd', 7]

C
###Magnetotransport in polycrystalline La$_{2/3}$Sr$_{1/3}$MnO$_{3}$ thin films of controlled granularity|P. K. Muduli,Gyanendra Singh,R. Sharma,R. C. Budhani###
(719396, 719396)
 Different degrees of granularity is achieved by using thedeposition temperature (TD) of 700 and 800 0C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 700, 'and', 0],[238.0, 20, '%', 4],[385.0, 3, 'd', 6]

C
###Magnetotransport in polycrystalline La$_{2/3}$Sr$_{1/3}$MnO$_{3}$ thin films of controlled granularity|P. K. Muduli,Gyanendra Singh,R. Sharma,R. C. Budhani###
(719418, 719418)
 Although nosignificant change in magnetic order temperature (T<missing VAR>C) and saturationmagnetization is seen for these two types of films, the temperature andmagnetic field dependence of their resistivity (rho(T<missing VAR>, H)) is strikinglydissimilar.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 700, 'and', 1],[216.0, 20, '%', 3],[363.0, 3, 'd', 5]

H
###Magnetotransport in polycrystalline La$_{2/3}$Sr$_{1/3}$MnO$_{3}$ thin films of controlled granularity|P. K. Muduli,Gyanendra Singh,R. Sharma,R. C. Budhani###
(719470, 719470)
 Although nosignificant change in magnetic order temperature (T<missing VAR>C) and saturationmagnetization is seen for these two types of films, the temperature andmagnetic field dependence of their resistivity (rho(T<missing VAR>, H)) is strikinglydissimilar.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 700, 'and', 1],[164.0, 20, '%', 3],[311.0, 3, 'd', 5]

H
###Magnetotransport in polycrystalline La$_{2/3}$Sr$_{1/3}$MnO$_{3}$ thin films of controlled granularity|P. K. Muduli,Gyanendra Singh,R. Sharma,R. C. Budhani###
(719490, 719490)
 While the rho(T<missing VAR>,H) of the 800 0C film is comparable to thatof epitaxial samples, the lower growth temperature leads to a material whichundergoes insulator-to-metal transition at a temperature (T<missing VAR>P approx 170K) much lower than T<missing VAR>C.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 700, 'and', 2],[144.0, 20, '%', 2],[291.0, 3, 'd', 4]

C
###Magnetotransport in polycrystalline La$_{2/3}$Sr$_{1/3}$MnO$_{3}$ thin films of controlled granularity|P. K. Muduli,Gyanendra Singh,R. Sharma,R. C. Budhani###
(719500, 719500)
 While the rho(T<missing VAR>,H) of the 800 0C film is comparable to thatof epitaxial samples, the lower growth temperature leads to a material whichundergoes insulator-to-metal transition at a temperature (T<missing VAR>P approx 170K) much lower than T<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 700, 'and', 2],[134.0, 20, '%', 2],[281.0, 3, 'd', 4]

P
###Magnetotransport in polycrystalline La$_{2/3}$Sr$_{1/3}$MnO$_{3}$ thin films of controlled granularity|P. K. Muduli,Gyanendra Singh,R. Sharma,R. C. Budhani###
(719557, 719557)
 While the rho(T<missing VAR>,H) of the 800 0C film is comparable to thatof epitaxial samples, the lower growth temperature leads to a material whichundergoes insulator-to-metal transition at a temperature (T<missing VAR>P approx 170K) much lower than T<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 700, 'and', 2],[77.0, 20, '%', 2],[224.0, 3, 'd', 4]

K
###Magnetotransport in polycrystalline La$_{2/3}$Sr$_{1/3}$MnO$_{3}$ thin films of controlled granularity|P. K. Muduli,Gyanendra Singh,R. Sharma,R. C. Budhani###
(719564, 719564)
 While the rho(T<missing VAR>,H) of the 800 0C film is comparable to thatof epitaxial samples, the lower growth temperature leads to a material whichundergoes insulator-to-metal transition at a temperature (T<missing VAR>P approx 170K) much lower than T<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 700, 'and', 2],[70.0, 20, '%', 2],[217.0, 3, 'd', 4]

C
###Magnetotransport in polycrystalline La$_{2/3}$Sr$_{1/3}$MnO$_{3}$ thin films of controlled granularity|P. K. Muduli,Gyanendra Singh,R. Sharma,R. C. Budhani###
(719574, 719574)
 While the rho(T<missing VAR>,H) of the 800 0C film is comparable to thatof epitaxial samples, the lower growth temperature leads to a material whichundergoes insulator-to-metal transition at a temperature (T<missing VAR>P approx 170K) much lower than T<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[183.0, 700, 'and', 2],[60.0, 20, '%', 2],[207.0, 3, 'd', 4]

At
###Magnetotransport in polycrystalline La$_{2/3}$Sr$_{1/3}$MnO$_{3}$ thin films of controlled granularity|P. K. Muduli,Gyanendra Singh,R. Sharma,R. C. Budhani###
(719577, 719577)
 At T<missing VAR> ll T<missing VAR>P, the resistivity is characterized bya minimum followed by ln emphT<missing VAR> divergence at still lower temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, 700, 'and', 3],[57.0, 20, '%', 1],[204.0, 3, 'd', 3]

P
###Magnetotransport in polycrystalline La$_{2/3}$Sr$_{1/3}$MnO$_{3}$ thin films of controlled granularity|P. K. Muduli,Gyanendra Singh,R. Sharma,R. C. Budhani###
(719584, 719584)
 At T<missing VAR> ll T<missing VAR>P, the resistivity is characterized bya minimum followed by ln emphT<missing VAR> divergence at still lower temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[193.0, 700, 'and', 3],[50.0, 20, '%', 1],[197.0, 3, 'd', 3]

Mn
###Magnetotransport in polycrystalline La$_{2/3}$Sr$_{1/3}$MnO$_{3}$ thin films of controlled granularity|P. K. Muduli,Gyanendra Singh,R. Sharma,R. C. Budhani###
(719677, 719677)
 Thehigh negative magnetoresistance (approx 20%) and ln emphT<missing VAR> dependencebelow the minimum are explained on the basis of Kondo-type scattering fromblocked Mn-spins in the intergranular material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[286.0, 700, 'and', 4],[43.0, 20, '%', 0],[104.0, 3, 'd', 2]

C
###Magnetotransport in polycrystalline La$_{2/3}$Sr$_{1/3}$MnO$_{3}$ thin films of controlled granularity|P. K. Muduli,Gyanendra Singh,R. Sharma,R. C. Budhani###
(719711, 719711)
 Further, a striking feature ofthe TD  700 0C film is its two orders of magnitude larger anisotropicmagnetoresistance (AMR) as compared to the AMR of epitaxial films.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[320.0, 700, 'and', 5],[77.0, 20, '%', 1],[70.0, 3, 'd', 1]

Mn
###Magnetotransport in polycrystalline La$_{2/3}$Sr$_{1/3}$MnO$_{3}$ thin films of controlled granularity|P. K. Muduli,Gyanendra Singh,R. Sharma,R. C. Budhani###
(719787, 719787)
 We attributeit to unquenching of the orbital angular momentum of 3d electrons of Mn ions inthe intergranular region where crystal field is poorly defined.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[396.0, 700, 'and', 6],[153.0, 20, '%', 2],[6.0, 3, 'd', 0]

Co2TiSi
###Anomalous transport properties of the halfmetallic ferromagnets Co2TiSi, Co2TiGe, and Co2TiSn|Joachim Barth,Gerhard H. Fecher,Benjamin Balke,Tanja Graf,Claudia Felser,Andrey Shkabko,Anke Weidenkaff###
(719835, 719838)
Anomalous transport properties of the halfmetallic ferromagnets Co2TiSi, Co2TiGe, and Co2TiSn.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0.25,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, 55, '%', 5],[237.0, 4, 'T', 5],[314.0, 950, 'K', 6],[327.0, -52, 'muV', 7]

Co2TiGe
###Anomalous transport properties of the halfmetallic ferromagnets Co2TiSi, Co2TiGe, and Co2TiSn|Joachim Barth,Gerhard H. Fecher,Benjamin Balke,Tanja Graf,Claudia Felser,Andrey Shkabko,Anke Weidenkaff###
(719841, 719844)
Anomalous transport properties of the halfmetallic ferromagnets Co2TiSi, Co2TiGe, and Co2TiSn.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0.5,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[199.0, 55, '%', 5],[231.0, 4, 'T', 5],[308.0, 950, 'K', 6],[321.0, -52, 'muV', 7]

Co2TiSn
###Anomalous transport properties of the halfmetallic ferromagnets Co2TiSi, Co2TiGe, and Co2TiSn|Joachim Barth,Gerhard H. Fecher,Benjamin Balke,Tanja Graf,Claudia Felser,Andrey Shkabko,Anke Weidenkaff###
(719849, 719852)
Anomalous transport properties of the halfmetallic ferromagnets Co2TiSi, Co2TiGe, and Co2TiSn.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[191.0, 55, '%', 5],[223.0, 4, 'T', 5],[300.0, 950, 'K', 6],[313.0, -52, 'muV', 7]

In
###Anomalous transport properties of the halfmetallic ferromagnets Co2TiSi, Co2TiGe, and Co2TiSn|Joachim Barth,Gerhard H. Fecher,Benjamin Balke,Tanja Graf,Claudia Felser,Andrey Shkabko,Anke Weidenkaff###
(719855, 719855)
 In this work the theoretical and experimental investigations of Co2TiZ<missing VAR> (Z<missing VAR> Si, Ge, or Sn) compounds are reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 55, '%', 4],[220.0, 4, 'T', 4],[297.0, 950, 'K', 5],[310.0, -52, 'muV', 6]

Co2Ti
###Anomalous transport properties of the halfmetallic ferromagnets Co2TiSi, Co2TiGe, and Co2TiSn|Joachim Barth,Gerhard H. Fecher,Benjamin Balke,Tanja Graf,Claudia Felser,Andrey Shkabko,Anke Weidenkaff###
(719873, 719875)
 In this work the theoretical and experimental investigations of Co2TiZ<missing VAR> (Z<missing VAR> Si, Ge, or Sn) compounds are reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[168.0, 55, '%', 4],[200.0, 4, 'T', 4],[277.0, 950, 'K', 5],[290.0, -52, 'muV', 6]

Si
###Anomalous transport properties of the halfmetallic ferromagnets Co2TiSi, Co2TiGe, and Co2TiSn|Joachim Barth,Gerhard H. Fecher,Benjamin Balke,Tanja Graf,Claudia Felser,Andrey Shkabko,Anke Weidenkaff###
(719883, 719883)
 In this work the theoretical and experimental investigations of Co2TiZ<missing VAR> (Z<missing VAR> Si, Ge, or Sn) compounds are reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 55, '%', 4],[192.0, 4, 'T', 4],[269.0, 950, 'K', 5],[282.0, -52, 'muV', 6]

Ge
###Anomalous transport properties of the halfmetallic ferromagnets Co2TiSi, Co2TiGe, and Co2TiSn|Joachim Barth,Gerhard H. Fecher,Benjamin Balke,Tanja Graf,Claudia Felser,Andrey Shkabko,Anke Weidenkaff###
(719886, 719886)
 In this work the theoretical and experimental investigations of Co2TiZ<missing VAR> (Z<missing VAR> Si, Ge, or Sn) compounds are reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 55, '%', 4],[189.0, 4, 'T', 4],[266.0, 950, 'K', 5],[279.0, -52, 'muV', 6]

Sn
###Anomalous transport properties of the halfmetallic ferromagnets Co2TiSi, Co2TiGe, and Co2TiSn|Joachim Barth,Gerhard H. Fecher,Benjamin Balke,Tanja Graf,Claudia Felser,Andrey Shkabko,Anke Weidenkaff###
(719891, 719891)
 In this work the theoretical and experimental investigations of Co2TiZ<missing VAR> (Z<missing VAR> Si, Ge, or Sn) compounds are reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 55, '%', 4],[184.0, 4, 'T', 4],[261.0, 950, 'K', 5],[274.0, -52, 'muV', 6]

Co2TiSn
###Anomalous transport properties of the halfmetallic ferromagnets Co2TiSi, Co2TiGe, and Co2TiSn|Joachim Barth,Gerhard H. Fecher,Benjamin Balke,Tanja Graf,Claudia Felser,Andrey Shkabko,Anke Weidenkaff###
(720052, 720055)
 A large negativemagnetoresistance of 55% is observed for Co2TiSn at room temperature in anapplied magnetic field of 4T which is comparable to the large negativemagnetoresistances of the manganites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 55, '%', 0],[20.0, 4, 'T', 0],[97.0, 950, 'K', 1],[110.0, -52, 'muV', 2]

K
###Anomalous transport properties of the halfmetallic ferromagnets Co2TiSi, Co2TiGe, and Co2TiSn|Joachim Barth,Gerhard H. Fecher,Benjamin Balke,Tanja Graf,Claudia Felser,Andrey Shkabko,Anke Weidenkaff###
(720167, 720167)
 The highest value achievedis -52muV/K m<missing VAR> for Co2TiSn which is large for a metal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 55, '%', 2],[92.0, 4, 'T', 2],[15.0, 950, 'K', 1],[2.0, -52, 'muV', 0]

Co2TiSn
###Anomalous transport properties of the halfmetallic ferromagnets Co2TiSi, Co2TiGe, and Co2TiSn|Joachim Barth,Gerhard H. Fecher,Benjamin Balke,Tanja Graf,Claudia Felser,Andrey Shkabko,Anke Weidenkaff###
(720173, 720176)
 The highest value achievedis -52muV/K m<missing VAR> for Co2TiSn which is large for a metal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 55, '%', 2],[98.0, 4, 'T', 2],[21.0, 950, 'K', 1],[8.0, -52, 'muV', 0]

PdNi
###Measurement of spin memory lengths in PdNi and PdFe ferromagnetic alloys|H. Arham,T. S. Khaire,R. Loloee,W. P. Pratt, Jr.,Norman O. Birge###
(720271, 720272)
Measurement of spin memory lengths in PdNi and PdFe ferromagnetic alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[304.0, 0.5, 'nm', 6],[313.0, 0.6, 'nm', 6],[382.0, 2, 'nm', 7]

PdFe
###Measurement of spin memory lengths in PdNi and PdFe ferromagnetic alloys|H. Arham,T. S. Khaire,R. Loloee,W. P. Pratt, Jr.,Norman O. Birge###
(720276, 720277)
Measurement of spin memory lengths in PdNi and PdFe ferromagnetic alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[299.0, 0.5, 'nm', 6],[308.0, 0.6, 'nm', 6],[377.0, 2, 'nm', 7]

K
###Measurement of spin memory lengths in PdNi and PdFe ferromagnetic alloys|H. Arham,T. S. Khaire,R. Loloee,W. P. Pratt, Jr.,Norman O. Birge###
(720416, 720416)
 We have measured the spin memory length at4.2 K in sputtered Pd0.88Ni0.12 and Pd0.987Fe0.013 alloys using methods basedon current-perpendicular-to-plane giant magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 0.5, 'nm', 3],[169.0, 0.6, 'nm', 3],[238.0, 2, 'nm', 4]

Pd0.88Ni0.12
###Measurement of spin memory lengths in PdNi and PdFe ferromagnetic alloys|H. Arham,T. S. Khaire,R. Loloee,W. P. Pratt, Jr.,Norman O. Birge###
(720422, 720425)
 We have measured the spin memory length at4.2 K in sputtered Pd0.88Ni0.12 and Pd0.987Fe0.013 alloys using methods basedon current-perpendicular-to-plane giant magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.12,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.88,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 0.5, 'nm', 3],[160.0, 0.6, 'nm', 3],[229.0, 2, 'nm', 4]

Pd0.987Fe0.013
###Measurement of spin memory lengths in PdNi and PdFe ferromagnetic alloys|H. Arham,T. S. Khaire,R. Loloee,W. P. Pratt, Jr.,Norman O. Birge###
(720429, 720432)
 We have measured the spin memory length at4.2 K in sputtered Pd0.88Ni0.12 and Pd0.987Fe0.013 alloys using methods basedon current-perpendicular-to-plane giant magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.013,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.987,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 0.5, 'nm', 3],[153.0, 0.6, 'nm', 3],[222.0, 2, 'nm', 4]

PdNi
###Measurement of spin memory lengths in PdNi and PdFe ferromagnetic alloys|H. Arham,T. S. Khaire,R. Loloee,W. P. Pratt, Jr.,Norman O. Birge###
(720540, 720541)
 For the case of PdNi alloy, theresulting values of the spin memory length are lsf(PdNi)  2.8 /- 0.5 nm and5.4 /- 0.6 nm, depending on whether or not the PdNi is exchange biased by anadjacent Permalloy layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 0.5, 'nm', 0],[44.0, 0.6, 'nm', 0],[113.0, 2, 'nm', 1]

(PdNi)
###Measurement of spin memory lengths in PdNi and PdFe ferromagnetic alloys|H. Arham,T. S. Khaire,R. Loloee,W. P. Pratt, Jr.,Norman O. Birge###
(720566, 720569)
 For the case of PdNi alloy, theresulting values of the spin memory length are lsf(PdNi)  2.8 /- 0.5 nm and5.4 /- 0.6 nm, depending on whether or not the PdNi is exchange biased by anadjacent Permalloy layer.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 0.5, 'nm', 0],[16.0, 0.6, 'nm', 0],[85.0, 2, 'nm', 1]

PdNi
###Measurement of spin memory lengths in PdNi and PdFe ferromagnetic alloys|H. Arham,T. S. Khaire,R. Loloee,W. P. Pratt, Jr.,Norman O. Birge###
(720600, 720601)
 For the case of PdNi alloy, theresulting values of the spin memory length are lsf(PdNi)  2.8 /- 0.5 nm and5.4 /- 0.6 nm, depending on whether or not the PdNi is exchange biased by anadjacent Permalloy layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 0.5, 'nm', 0],[15.0, 0.6, 'nm', 0],[53.0, 2, 'nm', 1]

PdFe
###Measurement of spin memory lengths in PdNi and PdFe ferromagnetic alloys|H. Arham,T. S. Khaire,R. Loloee,W. P. Pratt, Jr.,Norman O. Birge###
(720623, 720624)
 For PdFe, the spin memory length is somewhat longer,lsf(PdFe)  9.6 /- 2 nm, consistent with earlier measurements indicating lowerspin-orbit scattering in that material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 0.5, 'nm', 1],[38.0, 0.6, 'nm', 1],[30.0, 2, 'nm', 0]

(PdFe)
###Measurement of spin memory lengths in PdNi and PdFe ferromagnetic alloys|H. Arham,T. S. Khaire,R. Loloee,W. P. Pratt, Jr.,Norman O. Birge###
(720644, 720647)
 For PdFe, the spin memory length is somewhat longer,lsf(PdFe)  9.6 /- 2 nm, consistent with earlier measurements indicating lowerspin-orbit scattering in that material.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 0.5, 'nm', 1],[59.0, 0.6, 'nm', 1],[7.0, 2, 'nm', 0]

PdFe
###Measurement of spin memory lengths in PdNi and PdFe ferromagnetic alloys|H. Arham,T. S. Khaire,R. Loloee,W. P. Pratt, Jr.,Norman O. Birge###
(720701, 720702)
 Unfortunately, even the longer spinmemory length in PdFe may not be long enough to facilitate observation ofspin-triplet superconducting correlations predicted to occur insuperconducting/ferromagnetic hybrid systems in the presence of magneticinhomogeneity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 0.5, 'nm', 2],[116.0, 0.6, 'nm', 2],[47.0, 2, 'nm', 1]

H
###Dephasing time and magnetoresistance of two-dimensional electron gas in spatially modulated magnetic fields|A. S. Melnikov,S. V. Mironov,S. V. Sharov###
(720858, 720858)
 Both thedephasing time tauH and magnetoresistance are shown to reveal a nontrivialbehavior as functions of the characteristics of magnetic field profiles.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H0
###Dephasing time and magnetoresistance of two-dimensional electron gas in spatially modulated magnetic fields|A. S. Melnikov,S. V. Mironov,S. V. Sharov###
(720926, 720927)
 Themagnetic field profiles with rather small spatial scales d<missing VAR> and modulationamplitudes H0 such that H0d<missing VAR>2llhbar c/e are characterized by thedephasing rate tauH-1propto H02d<missing VAR>2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H0
###Dephasing time and magnetoresistance of two-dimensional electron gas in spatially modulated magnetic fields|A. S. Melnikov,S. V. Mironov,S. V. Sharov###
(720933, 720934)
 Themagnetic field profiles with rather small spatial scales d<missing VAR> and modulationamplitudes H0 such that H0d<missing VAR>2llhbar c/e are characterized by thedephasing rate tauH-1propto H02d<missing VAR>2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Dephasing time and magnetoresistance of two-dimensional electron gas in spatially modulated magnetic fields|A. S. Melnikov,S. V. Mironov,S. V. Sharov###
(720958, 720958)
 Themagnetic field profiles with rather small spatial scales d<missing VAR> and modulationamplitudes H0 such that H0d<missing VAR>2llhbar c/e are characterized by thedephasing rate tauH-1propto H02d<missing VAR>2.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H02
###Dephasing time and magnetoresistance of two-dimensional electron gas in spatially modulated magnetic fields|A. S. Melnikov,S. V. Mironov,S. V. Sharov###
(720963, 720965)
 Themagnetic field profiles with rather small spatial scales d<missing VAR> and modulationamplitudes H0 such that H0d<missing VAR>2llhbar c/e are characterized by thedephasing rate tauH-1propto H02d<missing VAR>2.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H0
###Dephasing time and magnetoresistance of two-dimensional electron gas in spatially modulated magnetic fields|A. S. Melnikov,S. V. Mironov,S. V. Sharov###
(720983, 720984)
 The increase in the flux valueH0d<missing VAR>2 results in a crossover to a standard linear dependencetauH-1propto H0.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Dephasing time and magnetoresistance of two-dimensional electron gas in spatially modulated magnetic fields|A. S. Melnikov,S. V. Mironov,S. V. Sharov###
(721008, 721008)
 The increase in the flux valueH0d<missing VAR>2 results in a crossover to a standard linear dependencetauH-1propto H0.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H0
###Dephasing time and magnetoresistance of two-dimensional electron gas in spatially modulated magnetic fields|A. S. Melnikov,S. V. Mironov,S. V. Sharov###
(721013, 721014)
 The increase in the flux valueH0d<missing VAR>2 results in a crossover to a standard linear dependencetauH-1propto H0.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Dephasing time and magnetoresistance of two-dimensional electron gas in spatially modulated magnetic fields|A. S. Melnikov,S. V. Mironov,S. V. Sharov###
(721029, 721029)
 Applying an external homogeneous magnetic field Hone can vary the local dephasing time in the system and affect the resultingaverage transport characteristics.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Dephasing time and magnetoresistance of two-dimensional electron gas in spatially modulated magnetic fields|A. S. Melnikov,S. V. Mironov,S. V. Sharov###
(721093, 721093)
 We have investigated the dependence of theaverage resistance vs the field H for some generic systems and predict apossibility to observe a positive magnetoresistance at not too large Hvalues.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Dephasing time and magnetoresistance of two-dimensional electron gas in spatially modulated magnetic fields|A. S. Melnikov,S. V. Mironov,S. V. Sharov###
(721130, 721130)
 We have investigated the dependence of theaverage resistance vs the field H for some generic systems and predict apossibility to observe a positive magnetoresistance at not too large Hvalues.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Dephasing time and magnetoresistance of two-dimensional electron gas in spatially modulated magnetic fields|A. S. Melnikov,S. V. Mironov,S. V. Sharov###
(721150, 721150)
 The resulting dependence of the resistance vs H should reveal a peakat the field values Hsim H0.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Dephasing time and magnetoresistance of two-dimensional electron gas in spatially modulated magnetic fields|A. S. Melnikov,S. V. Mironov,S. V. Sharov###
(721169, 721169)
 The resulting dependence of the resistance vs H should reveal a peakat the field values Hsim H0.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H0
###Dephasing time and magnetoresistance of two-dimensional electron gas in spatially modulated magnetic fields|A. S. Melnikov,S. V. Mironov,S. V. Sharov###
(721172, 721173)
 The resulting dependence of the resistance vs H should reveal a peakat the field values Hsim H0.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ca2.5-x
###Ferromagnetic Clusters in the Brownmillerite Bilayered Compounds Ca2.5-xLaxSr0.5GaMn2O8: An Approach to Achieve Layered Spintronics Materials|A. K. Bera,S. M. Yusuf###
(721198, 721201)
Ferromagnetic Clusters in the Brownmillerite Bilayered Compounds Ca2.5-xLaxSr0.5GaMn2O8 An Approach to Achieve Layered Spintronics Materials.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[80.0, 0, ',', 1],[83.0, 0.05, ',', 1],[86.0, 0.075, ',', 1],[254.0, 150, 'K', 4],[287.0, 300, 'K', 5]

Sr0.5GaMn2O8
###Ferromagnetic Clusters in the Brownmillerite Bilayered Compounds Ca2.5-xLaxSr0.5GaMn2O8: An Approach to Achieve Layered Spintronics Materials|A. K. Bera,S. M. Yusuf###
(721203, 721209)
Ferromagnetic Clusters in the Brownmillerite Bilayered Compounds Ca2.5-xLaxSr0.5GaMn2O8 An Approach to Achieve Layered Spintronics Materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6956521739130435,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.17391304347826086,0,0,0,0,0,0.08695652173913043,0,0,0,0,0,0,0.043478260869565216,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 0, ',', 1],[75.0, 0.05, ',', 1],[78.0, 0.075, ',', 1],[246.0, 150, 'K', 4],[279.0, 300, 'K', 5]

La
###Ferromagnetic Clusters in the Brownmillerite Bilayered Compounds Ca2.5-xLaxSr0.5GaMn2O8: An Approach to Achieve Layered Spintronics Materials|A. K. Bera,S. M. Yusuf###
(721236, 721236)
 We report the effect of La-substitution on the magnetic and magnetotransportproperties of Brownmillerite-like bilayered compounds Ca2.5-xLaxSr0.5GaMn2O8 (x<missing VAR> 0, 0.05, 0.075, and 0.1) by using dc-magnetization, resistivity andmagnetoresistance techniques.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 0, ',', 0],[48.0, 0.05, ',', 0],[51.0, 0.075, ',', 0],[219.0, 150, 'K', 3],[252.0, 300, 'K', 4]

Ca2.5-x
###Ferromagnetic Clusters in the Brownmillerite Bilayered Compounds Ca2.5-xLaxSr0.5GaMn2O8: An Approach to Achieve Layered Spintronics Materials|A. K. Bera,S. M. Yusuf###
(721263, 721266)
 We report the effect of La-substitution on the magnetic and magnetotransportproperties of Brownmillerite-like bilayered compounds Ca2.5-xLaxSr0.5GaMn2O8 (x<missing VAR> 0, 0.05, 0.075, and 0.1) by using dc-magnetization, resistivity andmagnetoresistance techniques.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[15.0, 0, ',', 0],[18.0, 0.05, ',', 0],[21.0, 0.075, ',', 0],[189.0, 150, 'K', 3],[222.0, 300, 'K', 4]

Sr0.5GaMn2O8
###Ferromagnetic Clusters in the Brownmillerite Bilayered Compounds Ca2.5-xLaxSr0.5GaMn2O8: An Approach to Achieve Layered Spintronics Materials|A. K. Bera,S. M. Yusuf###
(721268, 721274)
 We report the effect of La-substitution on the magnetic and magnetotransportproperties of Brownmillerite-like bilayered compounds Ca2.5-xLaxSr0.5GaMn2O8 (x<missing VAR> 0, 0.05, 0.075, and 0.1) by using dc-magnetization, resistivity andmagnetoresistance techniques.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6956521739130435,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.17391304347826086,0,0,0,0,0,0.08695652173913043,0,0,0,0,0,0,0.043478260869565216,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 0, ',', 0],[10.0, 0.05, ',', 0],[13.0, 0.075, ',', 0],[181.0, 150, 'K', 3],[214.0, 300, 'K', 4]

La
###Ferromagnetic Clusters in the Brownmillerite Bilayered Compounds Ca2.5-xLaxSr0.5GaMn2O8: An Approach to Achieve Layered Spintronics Materials|A. K. Bera,S. M. Yusuf###
(721358, 721358)
 The Rietveld analysis of the room temperaturex<missing VAR>-ray diffraction patterns confirms no observable change of average crystalstructure with the La-substitution.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 0, ',', 1],[74.0, 0.05, ',', 1],[71.0, 0.075, ',', 1],[97.0, 150, 'K', 2],[130.0, 300, 'K', 3]

La
###Ferromagnetic Clusters in the Brownmillerite Bilayered Compounds Ca2.5-xLaxSr0.5GaMn2O8: An Approach to Achieve Layered Spintronics Materials|A. K. Bera,S. M. Yusuf###
(721390, 721390)
 Both magnetic and magnetotransportproperties are found to be very sensitive to the La-substitution.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 0, ',', 2],[106.0, 0.05, ',', 2],[103.0, 0.075, ',', 2],[65.0, 150, 'K', 1],[98.0, 300, 'K', 2]

La
###Ferromagnetic Clusters in the Brownmillerite Bilayered Compounds Ca2.5-xLaxSr0.5GaMn2O8: An Approach to Achieve Layered Spintronics Materials|A. K. Bera,S. M. Yusuf###
(721401, 721401)
Interestingly, the La-substituted compounds show ferromagnetic-like behavior(due to the occurrence of a double exchange mechanism) whereas, the parentcompound is an antiferromagnet (T<missing VAR>N 150 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 0, ',', 3],[117.0, 0.05, ',', 3],[114.0, 0.075, ',', 3],[54.0, 150, 'K', 0],[87.0, 300, 'K', 1]

N
###Ferromagnetic Clusters in the Brownmillerite Bilayered Compounds Ca2.5-xLaxSr0.5GaMn2O8: An Approach to Achieve Layered Spintronics Materials|A. K. Bera,S. M. Yusuf###
(721454, 721454)
Interestingly, the La-substituted compounds show ferromagnetic-like behavior(due to the occurrence of a double exchange mechanism) whereas, the parentcompound is an antiferromagnet (T<missing VAR>N 150 K).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 0, ',', 3],[170.0, 0.05, ',', 3],[167.0, 0.075, ',', 3],[1.0, 150, 'K', 0],[34.0, 300, 'K', 1]

La
###Ferromagnetic Clusters in the Brownmillerite Bilayered Compounds Ca2.5-xLaxSr0.5GaMn2O8: An Approach to Achieve Layered Spintronics Materials|A. K. Bera,S. M. Yusuf###
(721536, 721536)
 A higher value ofmagnetoresistance has been successfully achieved by the La-substitution.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[255.0, 0, ',', 5],[252.0, 0.05, ',', 5],[249.0, 0.075, ',', 5],[81.0, 150, 'K', 2],[48.0, 300, 'K', 1]

La
###Ferromagnetic Clusters in the Brownmillerite Bilayered Compounds Ca2.5-xLaxSr0.5GaMn2O8: An Approach to Achieve Layered Spintronics Materials|A. K. Bera,S. M. Yusuf###
(721602, 721602)
 Wehave proposed an electronic phase separation model, considering the formationof ferromagnetic clusters in the antiferromagnetic matrix, to interpret theobserved magnetization and magnetotransport results for the La-substitutedsamples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[321.0, 0, ',', 6],[318.0, 0.05, ',', 6],[315.0, 0.075, ',', 6],[147.0, 150, 'K', 3],[114.0, 300, 'K', 2]

Ca2.5-x
###Ferromagnetic Clusters in the Brownmillerite Bilayered Compounds Ca2.5-xLaxSr0.5GaMn2O8: An Approach to Achieve Layered Spintronics Materials|A. K. Bera,S. M. Yusuf###
(721649, 721652)
 The present study demonstrates an approach to achieve new functionalmaterials, based on naturally occurring layered system likeCa2.5-xLaxSr0.5GaMn2O8, for possible spintronics applications.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[368.0, 0, ',', 7],[365.0, 0.05, ',', 7],[362.0, 0.075, ',', 7],[194.0, 150, 'K', 4],[161.0, 300, 'K', 3]

Sr0.5GaMn2O8
###Ferromagnetic Clusters in the Brownmillerite Bilayered Compounds Ca2.5-xLaxSr0.5GaMn2O8: An Approach to Achieve Layered Spintronics Materials|A. K. Bera,S. M. Yusuf###
(721654, 721660)
 The present study demonstrates an approach to achieve new functionalmaterials, based on naturally occurring layered system likeCa2.5-xLaxSr0.5GaMn2O8, for possible spintronics applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6956521739130435,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.17391304347826086,0,0,0,0,0,0.08695652173913043,0,0,0,0,0,0,0.043478260869565216,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[373.0, 0, ',', 7],[370.0, 0.05, ',', 7],[367.0, 0.075, ',', 7],[199.0, 150, 'K', 4],[166.0, 300, 'K', 3]

F1
###Magnetoresistance and transistor-like behavior of double quantum dots connected to ferromagnetic and superconductor leads|E. C. Siqueira,G. G. Cabrera###
(721770, 721771)
 The electric current and the magnetoresistance effect are studied in a doublequantum-dot system, where one of the dots Q<missing VAR>Da is coupled to two ferromagneticelectrodes (F1,F2), while the second Q<missing VAR>Db is connected to a superconductor S.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F2
###Magnetoresistance and transistor-like behavior of double quantum dots connected to ferromagnetic and superconductor leads|E. C. Siqueira,G. G. Cabrera###
(721773, 721774)
 The electric current and the magnetoresistance effect are studied in a doublequantum-dot system, where one of the dots Q<missing VAR>Da is coupled to two ferromagneticelectrodes (F1,F2), while the second Q<missing VAR>Db is connected to a superconductor S.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Db
###Magnetoresistance and transistor-like behavior of double quantum dots connected to ferromagnetic and superconductor leads|E. C. Siqueira,G. G. Cabrera###
(721785, 721785)
 The electric current and the magnetoresistance effect are studied in a doublequantum-dot system, where one of the dots Q<missing VAR>Da is coupled to two ferromagneticelectrodes (F1,F2), while the second Q<missing VAR>Db is connected to a superconductor S.
EXCEPTION 3: IndexError for Db
S
Abstract does not contain any numbers.

CeOs2Al10
###Structural Modification and Metamagnetic Anomaly in the Ordered State of CeOs2Al10|Y. Muro,J. Kajino,K. Umeo,K. Nishimoto,R. Tamura,T. Takabatake###
(722112, 722116)
Structural Modification and Metamagnetic Anomaly in the Ordered State of CeOs2Al10.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.7692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15384615384615385,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 0, ',', 3],[111.0, 3, ',', 3],[122.0, 15, 'K', 3],[168.0, 50, 'K', 4],[325.0, 14, 'T', 7]

CeOs2Al10
###Structural Modification and Metamagnetic Anomaly in the Ordered State of CeOs2Al10|Y. Muro,J. Kajino,K. Umeo,K. Nishimoto,R. Tamura,T. Takabatake###
(722125, 722129)
 A caged compound CeOs2Al10, crystallizing in the orthorhombic YbFe2Al10-typestructure, undergoes a mysterious phase transition at T<missing VAR>029 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.7692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15384615384615385,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 0, ',', 2],[98.0, 3, ',', 2],[109.0, 15, 'K', 2],[155.0, 50, 'K', 3],[312.0, 14, 'T', 6]

YbFe2Al10
###Structural Modification and Metamagnetic Anomaly in the Ordered State of CeOs2Al10|Y. Muro,J. Kajino,K. Umeo,K. Nishimoto,R. Tamura,T. Takabatake###
(722140, 722144)
 A caged compound CeOs2Al10, crystallizing in the orthorhombic YbFe2Al10-typestructure, undergoes a mysterious phase transition at T<missing VAR>029 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.7692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0.15384615384615385,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 0, ',', 2],[83.0, 3, ',', 2],[94.0, 15, 'K', 2],[140.0, 50, 'K', 3],[297.0, 14, 'T', 6]

K
###Structural Modification and Metamagnetic Anomaly in the Ordered State of CeOs2Al10|Y. Muro,J. Kajino,K. Umeo,K. Nishimoto,R. Tamura,T. Takabatake###
(722168, 722168)
 A caged compound CeOs2Al10, crystallizing in the orthorhombic YbFe2Al10-typestructure, undergoes a mysterious phase transition at T<missing VAR>029 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 0, ',', 2],[59.0, 3, ',', 2],[70.0, 15, 'K', 2],[116.0, 50, 'K', 3],[273.0, 14, 'T', 6]

B
###Structural Modification and Metamagnetic Anomaly in the Ordered State of CeOs2Al10|Y. Muro,J. Kajino,K. Umeo,K. Nishimoto,R. Tamura,T. Takabatake###
(722313, 722313)
The magnetic susceptibility chi  M<missing VAR>/B is highly anisotropic,chia>chic<missing VAR>>chib<missing VAR>, all of which sharply decrease on cooling below T<missing VAR>0.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 0, ',', 2],[86.0, 3, ',', 2],[75.0, 15, 'K', 2],[29.0, 50, 'K', 1],[128.0, 14, 'T', 2]

B6
###Structural Modification and Metamagnetic Anomaly in the Ordered State of CeOs2Al10|Y. Muro,J. Kajino,K. Umeo,K. Nishimoto,R. Tamura,T. Takabatake###
(722386, 722387)
Furthermore, a metamagnetic anomaly in the magnetization and a step in themagnetoresistance occur at B6-8 T<missing VAR> only when the magnetic field is appliedparallel to the orthorhombic c<missing VAR> axis.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 0, ',', 3],[159.0, 3, ',', 3],[148.0, 15, 'K', 3],[102.0, 50, 'K', 2],[54.0, 14, 'T', 1]

B
###Structural Modification and Metamagnetic Anomaly in the Ordered State of CeOs2Al10|Y. Muro,J. Kajino,K. Umeo,K. Nishimoto,R. Tamura,T. Takabatake###
(722471, 722471)
 By using these data, wepresent a B-T<missing VAR> phase diagram and discuss several scenarios for the mysterioustransition.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[250.0, 0, ',', 5],[244.0, 3, ',', 5],[233.0, 15, 'K', 5],[187.0, 50, 'K', 4],[30.0, 14, 'T', 1]

La
###Structural, Magnetic and Electron Transport Properties of Ordered-Disordered Perovskite Cobaltites|Asish K. Kundu,B. Raveau###
(722875, 722875)
 Most importantly for the present article wefocus on La-Ba-Co-O based ordered-disordered perovskite phases, which exhibitinteresting magnetic and electron transport properties with ferromagnetictransition, T<missing VAR>C  177K, and it being the first member of lanthanide series.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 177, 'K', 0]

Ba
###Structural, Magnetic and Electron Transport Properties of Ordered-Disordered Perovskite Cobaltites|Asish K. Kundu,B. Raveau###
(722877, 722877)
 Most importantly for the present article wefocus on La-Ba-Co-O based ordered-disordered perovskite phases, which exhibitinteresting magnetic and electron transport properties with ferromagnetictransition, T<missing VAR>C  177K, and it being the first member of lanthanide series.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 177, 'K', 0]

Co
###Structural, Magnetic and Electron Transport Properties of Ordered-Disordered Perovskite Cobaltites|Asish K. Kundu,B. Raveau###
(722879, 722879)
 Most importantly for the present article wefocus on La-Ba-Co-O based ordered-disordered perovskite phases, which exhibitinteresting magnetic and electron transport properties with ferromagnetictransition, T<missing VAR>C  177K, and it being the first member of lanthanide series.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 177, 'K', 0]

O
###Structural, Magnetic and Electron Transport Properties of Ordered-Disordered Perovskite Cobaltites|Asish K. Kundu,B. Raveau###
(722881, 722881)
 Most importantly for the present article wefocus on La-Ba-Co-O based ordered-disordered perovskite phases, which exhibitinteresting magnetic and electron transport properties with ferromagnetictransition, T<missing VAR>C  177K, and it being the first member of lanthanide series.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 177, 'K', 0]

C
###Structural, Magnetic and Electron Transport Properties of Ordered-Disordered Perovskite Cobaltites|Asish K. Kundu,B. Raveau###
(722920, 722920)
 Most importantly for the present article wefocus on La-Ba-Co-O based ordered-disordered perovskite phases, which exhibitinteresting magnetic and electron transport properties with ferromagnetictransition, T<missing VAR>C  177K, and it being the first member of lanthanide series.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 177, 'K', 0]

In
###Structural, Magnetic and Electron Transport Properties of Ordered-Disordered Perovskite Cobaltites|Asish K. Kundu,B. Raveau###
(722999, 722999)
 In terms of electron transport theferromagnetic-metallic or insulating/semiconducting states have been discussedin the present article with different types of hopping model.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 177, 'K', 2]

SrTiO3
###Creation and control of a two-dimensional electron liquid at the bare SrTiO3 surface|W. Meevasana,P. D. C. King,R. H. He,S. -K. Mo,M. Hashimoto,A. Tamai,P. Songsiriritthigul,F. Baumberger,Z. -X. Shen###
(723084, 723087)
Creation and control of a two-dimensional electron liquid at the bare SrTiO3 surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[219.0, 2, 'DEG', 4],[241.0, 2, 'DEG', 5],[258.0, 8, 'x', 5],[263.0, -2, ',', 5],[298.0, 2, 'DEG', 6]

LaAlO3
###Creation and control of a two-dimensional electron liquid at the bare SrTiO3 surface|W. Meevasana,P. D. C. King,R. H. He,S. -K. Mo,M. Hashimoto,A. Tamai,P. Songsiriritthigul,F. Baumberger,Z. -X. Shen###
(723191, 723194)
 The seminal recent discovery of atwo-dimensional electron gas (2DEG) at the interface of the insulating oxidesLaAlO3 and SrTiO3 represents an important milestone towards exploiting suchproperties in all-oxide devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 2, 'DEG', 2],[134.0, 2, 'DEG', 3],[151.0, 8, 'x', 3],[156.0, -2, ',', 3],[191.0, 2, 'DEG', 4]

SrTiO3
###Creation and control of a two-dimensional electron liquid at the bare SrTiO3 surface|W. Meevasana,P. D. C. King,R. H. He,S. -K. Mo,M. Hashimoto,A. Tamai,P. Songsiriritthigul,F. Baumberger,Z. -X. Shen###
(723198, 723201)
 The seminal recent discovery of atwo-dimensional electron gas (2DEG) at the interface of the insulating oxidesLaAlO3 and SrTiO3 represents an important milestone towards exploiting suchproperties in all-oxide devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 2, 'DEG', 2],[127.0, 2, 'DEG', 3],[144.0, 8, 'x', 3],[149.0, -2, ',', 3],[184.0, 2, 'DEG', 4]

SrTiO3
###Creation and control of a two-dimensional electron liquid at the bare SrTiO3 surface|W. Meevasana,P. D. C. King,R. H. He,S. -K. Mo,M. Hashimoto,A. Tamai,P. Songsiriritthigul,F. Baumberger,Z. -X. Shen###
(723366, 723369)
 Here, we show that a similar 2DEG, with an electron density aslarge as 8x1013 cm-2, can be formed at the bare SrTiO3 surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 2, 'DEG', 1],[38.0, 2, 'DEG', 0],[21.0, 8, 'x', 0],[16.0, -2, ',', 0],[16.0, 2, 'DEG', 1]

(UV)
###Creation and control of a two-dimensional electron liquid at the bare SrTiO3 surface|W. Meevasana,P. D. C. King,R. H. He,S. -K. Mo,M. Hashimoto,A. Tamai,P. Songsiriritthigul,F. Baumberger,Z. -X. Shen###
(723412, 723415)
 Furthermore,we find that the 2DEG density can be controlled through exposure of the surfaceto intense ultraviolet (UV) light.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
[106.0, 2, 'DEG', 2],[84.0, 2, 'DEG', 1],[67.0, 8, 'x', 1],[62.0, -2, ',', 1],[27.0, 2, 'DEG', 0]

S
###Creation and control of a two-dimensional electron liquid at the bare SrTiO3 surface|W. Meevasana,P. D. C. King,R. H. He,S. -K. Mo,M. Hashimoto,A. Tamai,P. Songsiriritthigul,F. Baumberger,Z. -X. Shen###
(723436, 723436)
 Subsequent angle-resolved photoemissionspectroscopy (ARPES) measurements reveal an unusual coexistence of a lightquasiparticle mass and signatures of strong many-body interactions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 2, 'DEG', 3],[108.0, 2, 'DEG', 2],[91.0, 8, 'x', 2],[86.0, -2, ',', 2],[51.0, 2, 'DEG', 1]

I
###Long electron dephasing length and disorder-induced spin-orbit coupling in indium tin oxide nanowires|Yao-Wen Hsu,Shao-Pin Chiu,An-Shao Lien,Juhn-Jong Lin###
(723542, 723542)
 We have measured the quantum-interference magnetoresistances in two singleindium tin oxide (IT<missing VAR>O) nanowires between 0.25 and 40 K, by using the four-probeconfiguration method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 0.25, 'and', 0],[9.0, 40, 'K', 0],[130.0, 150, 'nm', 2],[133.0, 40, 'K', 2],[136.0, 520, 'nm', 2],[139.0, 0.25, 'K', 2],[245.0, 200, 'nm', 4],[280.0, 12, 'K', 4],[328.0, 4, 'K', 5]

O
###Long electron dephasing length and disorder-induced spin-orbit coupling in indium tin oxide nanowires|Yao-Wen Hsu,Shao-Pin Chiu,An-Shao Lien,Juhn-Jong Lin###
(723544, 723544)
 We have measured the quantum-interference magnetoresistances in two singleindium tin oxide (IT<missing VAR>O) nanowires between 0.25 and 40 K, by using the four-probeconfiguration method.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 0.25, 'and', 0],[7.0, 40, 'K', 0],[128.0, 150, 'nm', 2],[131.0, 40, 'K', 2],[134.0, 520, 'nm', 2],[137.0, 0.25, 'K', 2],[243.0, 200, 'nm', 4],[278.0, 12, 'K', 4],[326.0, 4, 'K', 5]

K
###Long electron dephasing length and disorder-induced spin-orbit coupling in indium tin oxide nanowires|Yao-Wen Hsu,Shao-Pin Chiu,An-Shao Lien,Juhn-Jong Lin###
(723645, 723645)
 We found, in a 60-nm diameter nanowire with a lowresistivity of rho(10 K)  185 mu Omega cm, that L<missing VAR>phi is long,increasing from 150 nm at 40 K to 520 nm at 0.25 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 0.25, 'and', 2],[94.0, 40, 'K', 2],[27.0, 150, 'nm', 0],[30.0, 40, 'K', 0],[33.0, 520, 'nm', 0],[36.0, 0.25, 'K', 0],[142.0, 200, 'nm', 2],[177.0, 12, 'K', 2],[225.0, 4, 'K', 3]

In
###Long electron dephasing length and disorder-induced spin-orbit coupling in indium tin oxide nanowires|Yao-Wen Hsu,Shao-Pin Chiu,An-Shao Lien,Juhn-Jong Lin###
(723724, 723724)
 In a second 72-nm diameter nanowire with a high resistivityof rho(10 K)  1030 mu Omega cm, the dephasing length is suppressed toL<missing VAR>phi(0.26 K)  200 nm, and thus a crossover of the effective devicedimensionality from one to three occurs at about 12 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[174.0, 0.25, 'and', 4],[173.0, 40, 'K', 4],[52.0, 150, 'nm', 2],[49.0, 40, 'K', 2],[46.0, 520, 'nm', 2],[43.0, 0.25, 'K', 2],[63.0, 200, 'nm', 0],[98.0, 12, 'K', 0],[146.0, 4, 'K', 1]

K
###Long electron dephasing length and disorder-induced spin-orbit coupling in indium tin oxide nanowires|Yao-Wen Hsu,Shao-Pin Chiu,An-Shao Lien,Juhn-Jong Lin###
(723753, 723753)
 In a second 72-nm diameter nanowire with a high resistivityof rho(10 K)  1030 mu Omega cm, the dephasing length is suppressed toL<missing VAR>phi(0.26 K)  200 nm, and thus a crossover of the effective devicedimensionality from one to three occurs at about 12 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[203.0, 0.25, 'and', 4],[202.0, 40, 'K', 4],[81.0, 150, 'nm', 2],[78.0, 40, 'K', 2],[75.0, 520, 'nm', 2],[72.0, 0.25, 'K', 2],[34.0, 200, 'nm', 0],[69.0, 12, 'K', 0],[117.0, 4, 'K', 1]

K
###Long electron dephasing length and disorder-induced spin-orbit coupling in indium tin oxide nanowires|Yao-Wen Hsu,Shao-Pin Chiu,An-Shao Lien,Juhn-Jong Lin###
(723784, 723784)
 In a second 72-nm diameter nanowire with a high resistivityof rho(10 K)  1030 mu Omega cm, the dephasing length is suppressed toL<missing VAR>phi(0.26 K)  200 nm, and thus a crossover of the effective devicedimensionality from one to three occurs at about 12 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[234.0, 0.25, 'and', 4],[233.0, 40, 'K', 4],[112.0, 150, 'nm', 2],[109.0, 40, 'K', 2],[106.0, 520, 'nm', 2],[103.0, 0.25, 'K', 2],[3.0, 200, 'nm', 0],[38.0, 12, 'K', 0],[86.0, 4, 'K', 1]

In
###Long electron dephasing length and disorder-induced spin-orbit coupling in indium tin oxide nanowires|Yao-Wen Hsu,Shao-Pin Chiu,An-Shao Lien,Juhn-Jong Lin###
(723825, 723825)
 In particular,disorder-induced spin-orbit coupling is evident in the latter sample,manifesting weak-antilocalization effect at temperatures below sim 4 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[275.0, 0.25, 'and', 5],[274.0, 40, 'K', 5],[153.0, 150, 'nm', 3],[150.0, 40, 'K', 3],[147.0, 520, 'nm', 3],[144.0, 0.25, 'K', 3],[38.0, 200, 'nm', 1],[3.0, 12, 'K', 1],[45.0, 4, 'K', 0]

I
###Long electron dephasing length and disorder-induced spin-orbit coupling in indium tin oxide nanowires|Yao-Wen Hsu,Shao-Pin Chiu,An-Shao Lien,Juhn-Jong Lin###
(723899, 723899)
These observations demonstrate that versatile quantum-interference effects canbe realized in IT<missing VAR>O nanowires by controlling differing levels of atomic defectsand impurities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[349.0, 0.25, 'and', 6],[348.0, 40, 'K', 6],[227.0, 150, 'nm', 4],[224.0, 40, 'K', 4],[221.0, 520, 'nm', 4],[218.0, 0.25, 'K', 4],[112.0, 200, 'nm', 2],[77.0, 12, 'K', 2],[29.0, 4, 'K', 1]

O
###Long electron dephasing length and disorder-induced spin-orbit coupling in indium tin oxide nanowires|Yao-Wen Hsu,Shao-Pin Chiu,An-Shao Lien,Juhn-Jong Lin###
(723901, 723901)
These observations demonstrate that versatile quantum-interference effects canbe realized in IT<missing VAR>O nanowires by controlling differing levels of atomic defectsand impurities.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[351.0, 0.25, 'and', 6],[350.0, 40, 'K', 6],[229.0, 150, 'nm', 4],[226.0, 40, 'K', 4],[223.0, 520, 'nm', 4],[220.0, 0.25, 'K', 4],[114.0, 200, 'nm', 2],[79.0, 12, 'K', 2],[31.0, 4, 'K', 1]

NiFe/IrMn/MgO/Pt
###Tunneling anisotropic magnetoresistance of NiFe/IrMn/MgO/Pt stack: An antiferromagnet based spin-valve|B. G. Park,J. Wunderlich,X. Marti,V. Holy,Y. Kurosaki,M. Yamada,H. Yamamoto,A. Nishide,J. Hayakawa,H. Takahashi,A. B. Shick,T. Jungwirth###
(723941, 723950)
Tunneling anisotropic magnetoresistance of NiFe/IrMn/MgO/Pt stack An antiferromagnet based spin-valve.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[164.0, 100, '%', 3]

F
###Tunneling anisotropic magnetoresistance of NiFe/IrMn/MgO/Pt stack: An antiferromagnet based spin-valve|B. G. Park,J. Wunderlich,X. Marti,V. Holy,Y. Kurosaki,M. Yamada,H. Yamamoto,A. Nishide,J. Hayakawa,H. Takahashi,A. B. Shick,T. Jungwirth###
(724052, 724052)
 Spin-valvestructures used in modern hard drive read-heads and magnetic random accessmemories comprise two ferromagnetic (FM) electrodes whose relativemagnetization orientations can be switched between parallel and antiparallelconfigurations, yielding the desired giant or tunneling magnetoresistanceeffect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 100, '%', 1]

In
###Tunneling anisotropic magnetoresistance of NiFe/IrMn/MgO/Pt stack: An antiferromagnet based spin-valve|B. G. Park,J. Wunderlich,X. Marti,V. Holy,Y. Kurosaki,M. Yamada,H. Yamamoto,A. Nishide,J. Hayakawa,H. Takahashi,A. B. Shick,T. Jungwirth###
(724103, 724103)
 In this paper we demonstrate >100% spin-valve-like signal in aNiFe/IrMn/MgO/Pt stack with an antiferromagnet (AFM) on one side and anon-magnetic metal on the other side of the tunnel barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 100, '%', 0]

NiFe/IrMn/MgO/Pt
###Tunneling anisotropic magnetoresistance of NiFe/IrMn/MgO/Pt stack: An antiferromagnet based spin-valve|B. G. Park,J. Wunderlich,X. Marti,V. Holy,Y. Kurosaki,M. Yamada,H. Yamamoto,A. Nishide,J. Hayakawa,H. Takahashi,A. B. Shick,T. Jungwirth###
(724130, 724139)
 In this paper we demonstrate >100% spin-valve-like signal in aNiFe/IrMn/MgO/Pt stack with an antiferromagnet (AFM) on one side and anon-magnetic metal on the other side of the tunnel barrier.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[16.0, 100, '%', 0]

F
###Tunneling anisotropic magnetoresistance of NiFe/IrMn/MgO/Pt stack: An antiferromagnet based spin-valve|B. G. Park,J. Wunderlich,X. Marti,V. Holy,Y. Kurosaki,M. Yamada,H. Yamamoto,A. Nishide,J. Hayakawa,H. Takahashi,A. B. Shick,T. Jungwirth###
(724151, 724151)
 In this paper we demonstrate >100% spin-valve-like signal in aNiFe/IrMn/MgO/Pt stack with an antiferromagnet (AFM) on one side and anon-magnetic metal on the other side of the tunnel barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 100, '%', 0]

F
###Tunneling anisotropic magnetoresistance of NiFe/IrMn/MgO/Pt stack: An antiferromagnet based spin-valve|B. G. Park,J. Wunderlich,X. Marti,V. Holy,Y. Kurosaki,M. Yamada,H. Yamamoto,A. Nishide,J. Hayakawa,H. Takahashi,A. B. Shick,T. Jungwirth###
(724189, 724189)
 FM<missing VAR> moments in NiFeare reversed by external fields <50mT and the exchange-spring effect of NiFe onIrMn induces rotation of AFM<missing VAR> moments in IrMn which is detected by the measuredtunneling anisotropic magnetoresistance (TAMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 100, '%', 1]

NiFe
###Tunneling anisotropic magnetoresistance of NiFe/IrMn/MgO/Pt stack: An antiferromagnet based spin-valve|B. G. Park,J. Wunderlich,X. Marti,V. Holy,Y. Kurosaki,M. Yamada,H. Yamamoto,A. Nishide,J. Hayakawa,H. Takahashi,A. B. Shick,T. Jungwirth###
(724196, 724197)
 FM<missing VAR> moments in NiFeare reversed by external fields <50mT and the exchange-spring effect of NiFe onIrMn induces rotation of AFM<missing VAR> moments in IrMn which is detected by the measuredtunneling anisotropic magnetoresistance (TAMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 100, '%', 1]

NiFe
###Tunneling anisotropic magnetoresistance of NiFe/IrMn/MgO/Pt stack: An antiferromagnet based spin-valve|B. G. Park,J. Wunderlich,X. Marti,V. Holy,Y. Kurosaki,M. Yamada,H. Yamamoto,A. Nishide,J. Hayakawa,H. Takahashi,A. B. Shick,T. Jungwirth###
(724227, 724228)
 FM<missing VAR> moments in NiFeare reversed by external fields <50mT and the exchange-spring effect of NiFe onIrMn induces rotation of AFM<missing VAR> moments in IrMn which is detected by the measuredtunneling anisotropic magnetoresistance (TAMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 100, '%', 1]

IrMn
###Tunneling anisotropic magnetoresistance of NiFe/IrMn/MgO/Pt stack: An antiferromagnet based spin-valve|B. G. Park,J. Wunderlich,X. Marti,V. Holy,Y. Kurosaki,M. Yamada,H. Yamamoto,A. Nishide,J. Hayakawa,H. Takahashi,A. B. Shick,T. Jungwirth###
(724233, 724234)
 FM<missing VAR> moments in NiFeare reversed by external fields <50mT and the exchange-spring effect of NiFe onIrMn induces rotation of AFM<missing VAR> moments in IrMn which is detected by the measuredtunneling anisotropic magnetoresistance (TAMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 100, '%', 1]

F
###Tunneling anisotropic magnetoresistance of NiFe/IrMn/MgO/Pt stack: An antiferromagnet based spin-valve|B. G. Park,J. Wunderlich,X. Marti,V. Holy,Y. Kurosaki,M. Yamada,H. Yamamoto,A. Nishide,J. Hayakawa,H. Takahashi,A. B. Shick,T. Jungwirth###
(724243, 724243)
 FM<missing VAR> moments in NiFeare reversed by external fields <50mT and the exchange-spring effect of NiFe onIrMn induces rotation of AFM<missing VAR> moments in IrMn which is detected by the measuredtunneling anisotropic magnetoresistance (TAMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 100, '%', 1]

IrMn
###Tunneling anisotropic magnetoresistance of NiFe/IrMn/MgO/Pt stack: An antiferromagnet based spin-valve|B. G. Park,J. Wunderlich,X. Marti,V. Holy,Y. Kurosaki,M. Yamada,H. Yamamoto,A. Nishide,J. Hayakawa,H. Takahashi,A. B. Shick,T. Jungwirth###
(724250, 724251)
 FM<missing VAR> moments in NiFeare reversed by external fields <50mT and the exchange-spring effect of NiFe onIrMn induces rotation of AFM<missing VAR> moments in IrMn which is detected by the measuredtunneling anisotropic magnetoresistance (TAMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 100, '%', 1]

F
###Tunneling anisotropic magnetoresistance of NiFe/IrMn/MgO/Pt stack: An antiferromagnet based spin-valve|B. G. Park,J. Wunderlich,X. Marti,V. Holy,Y. Kurosaki,M. Yamada,H. Yamamoto,A. Nishide,J. Hayakawa,H. Takahashi,A. B. Shick,T. Jungwirth###
(724308, 724308)
 Our work demonstrates aspintronic element whose transport characteristics are governed by an AFM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[194.0, 100, '%', 2]

F
###Tunneling anisotropic magnetoresistance of NiFe/IrMn/MgO/Pt stack: An antiferromagnet based spin-valve|B. G. Park,J. Wunderlich,X. Marti,V. Holy,Y. Kurosaki,M. Yamada,H. Yamamoto,A. Nishide,J. Hayakawa,H. Takahashi,A. B. Shick,T. Jungwirth###
(724370, 724370)
 The AFM-TAMR provides means to study magneticcharacteristics of AFM<missing VAR> films by an electronic transport measurement.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[256.0, 100, '%', 4]

F
###Tunneling anisotropic magnetoresistance of NiFe/IrMn/MgO/Pt stack: An antiferromagnet based spin-valve|B. G. Park,J. Wunderlich,X. Marti,V. Holy,Y. Kurosaki,M. Yamada,H. Yamamoto,A. Nishide,J. Hayakawa,H. Takahashi,A. B. Shick,T. Jungwirth###
(724394, 724394)
 The AFM-TAMR provides means to study magneticcharacteristics of AFM<missing VAR> films by an electronic transport measurement.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[280.0, 100, '%', 4]

CeRu2Al10
###Magnetization and Magnetoresistance of CeRu2Al10 under High Magnetic Fields along c-Axis|Akihiro Kondo,Junfeng Wang,Koichi Kindo,Tomoaki Takesaka,Yuta Ogane,Yukihiro Kawamura,Takashi Nishioka,Daiki Tanaka,Hiroshi Tanida,Masafumi Sera###
(724426, 724430)
Magnetization and Magnetoresistance of CeRu2Al10 under High Magnetic Fields along c<missing VAR>-Axis.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.7692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15384615384615385,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 55, 'T', 1],[124.0, 55, 'T', 2],[140.0, 4, 'T', 2],[174.0, 55, 'T', 2],[458.0, 4.2, 'K', 7],[469.0, 4.2, 'K', 8],[529.0, -2, ',', 8]

CeRu2Al10
###Magnetization and Magnetoresistance of CeRu2Al10 under High Magnetic Fields along c-Axis|Akihiro Kondo,Junfeng Wang,Koichi Kindo,Tomoaki Takesaka,Yuta Ogane,Yukihiro Kawamura,Takashi Nishioka,Daiki Tanaka,Hiroshi Tanida,Masafumi Sera###
(724463, 724467)
 We have studied the magnetization and magnetoresistance of CeRu2Al10 in theapplied magnetic field H along the c<missing VAR>-axis up to  55 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.7692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15384615384615385,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 55, 'T', 0],[87.0, 55, 'T', 1],[103.0, 4, 'T', 1],[137.0, 55, 'T', 1],[421.0, 4.2, 'K', 6],[432.0, 4.2, 'K', 7],[492.0, -2, ',', 7]

H
###Magnetization and Magnetoresistance of CeRu2Al10 under High Magnetic Fields along c-Axis|Akihiro Kondo,Junfeng Wang,Koichi Kindo,Tomoaki Takesaka,Yuta Ogane,Yukihiro Kawamura,Takashi Nishioka,Daiki Tanaka,Hiroshi Tanida,Masafumi Sera###
(724480, 724480)
 We have studied the magnetization and magnetoresistance of CeRu2Al10 in theapplied magnetic field H along the c<missing VAR>-axis up to  55 T.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 55, 'T', 0],[74.0, 55, 'T', 1],[90.0, 4, 'T', 1],[124.0, 55, 'T', 1],[408.0, 4.2, 'K', 6],[419.0, 4.2, 'K', 7],[479.0, -2, ',', 7]

H
###Magnetization and Magnetoresistance of CeRu2Al10 under High Magnetic Fields along c-Axis|Akihiro Kondo,Junfeng Wang,Koichi Kindo,Tomoaki Takesaka,Yuta Ogane,Yukihiro Kawamura,Takashi Nishioka,Daiki Tanaka,Hiroshi Tanida,Masafumi Sera###
(724514, 724514)
 The magnetization M<missing VAR> atlow temperatures shows an H-linear increase with a small slope of M<missing VAR>/H than thatfor H // a-axis up to  55 T after showing a small anomaly at H  4 T, whichindicates that the critical field to the paramagnetic phase Hcp is higherthan 55 T for H // c<missing VAR>-axis.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 55, 'T', 1],[40.0, 55, 'T', 0],[56.0, 4, 'T', 0],[90.0, 55, 'T', 0],[374.0, 4.2, 'K', 5],[385.0, 4.2, 'K', 6],[445.0, -2, ',', 6]

H
###Magnetization and Magnetoresistance of CeRu2Al10 under High Magnetic Fields along c-Axis|Akihiro Kondo,Junfeng Wang,Koichi Kindo,Tomoaki Takesaka,Yuta Ogane,Yukihiro Kawamura,Takashi Nishioka,Daiki Tanaka,Hiroshi Tanida,Masafumi Sera###
(724532, 724532)
 The magnetization M<missing VAR> atlow temperatures shows an H-linear increase with a small slope of M<missing VAR>/H than thatfor H // a-axis up to  55 T after showing a small anomaly at H  4 T, whichindicates that the critical field to the paramagnetic phase Hcp is higherthan 55 T for H // c<missing VAR>-axis.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 55, 'T', 1],[22.0, 55, 'T', 0],[38.0, 4, 'T', 0],[72.0, 55, 'T', 0],[356.0, 4.2, 'K', 5],[367.0, 4.2, 'K', 6],[427.0, -2, ',', 6]

H
###Magnetization and Magnetoresistance of CeRu2Al10 under High Magnetic Fields along c-Axis|Akihiro Kondo,Junfeng Wang,Koichi Kindo,Tomoaki Takesaka,Yuta Ogane,Yukihiro Kawamura,Takashi Nishioka,Daiki Tanaka,Hiroshi Tanida,Masafumi Sera###
(724541, 724541)
 The magnetization M<missing VAR> atlow temperatures shows an H-linear increase with a small slope of M<missing VAR>/H than thatfor H // a-axis up to  55 T after showing a small anomaly at H  4 T, whichindicates that the critical field to the paramagnetic phase Hcp is higherthan 55 T for H // c<missing VAR>-axis.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 55, 'T', 1],[13.0, 55, 'T', 0],[29.0, 4, 'T', 0],[63.0, 55, 'T', 0],[347.0, 4.2, 'K', 5],[358.0, 4.2, 'K', 6],[418.0, -2, ',', 6]

H
###Magnetization and Magnetoresistance of CeRu2Al10 under High Magnetic Fields along c-Axis|Akihiro Kondo,Junfeng Wang,Koichi Kindo,Tomoaki Takesaka,Yuta Ogane,Yukihiro Kawamura,Takashi Nishioka,Daiki Tanaka,Hiroshi Tanida,Masafumi Sera###
(724568, 724568)
 The magnetization M<missing VAR> atlow temperatures shows an H-linear increase with a small slope of M<missing VAR>/H than thatfor H // a-axis up to  55 T after showing a small anomaly at H  4 T, whichindicates that the critical field to the paramagnetic phase Hcp is higherthan 55 T for H // c<missing VAR>-axis.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 55, 'T', 1],[14.0, 55, 'T', 0],[2.0, 4, 'T', 0],[36.0, 55, 'T', 0],[320.0, 4.2, 'K', 5],[331.0, 4.2, 'K', 6],[391.0, -2, ',', 6]

H
###Magnetization and Magnetoresistance of CeRu2Al10 under High Magnetic Fields along c-Axis|Akihiro Kondo,Junfeng Wang,Koichi Kindo,Tomoaki Takesaka,Yuta Ogane,Yukihiro Kawamura,Takashi Nishioka,Daiki Tanaka,Hiroshi Tanida,Masafumi Sera###
(724594, 724594)
 The magnetization M<missing VAR> atlow temperatures shows an H-linear increase with a small slope of M<missing VAR>/H than thatfor H // a-axis up to  55 T after showing a small anomaly at H  4 T, whichindicates that the critical field to the paramagnetic phase Hcp is higherthan 55 T for H // c<missing VAR>-axis.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 55, 'T', 1],[40.0, 55, 'T', 0],[24.0, 4, 'T', 0],[10.0, 55, 'T', 0],[294.0, 4.2, 'K', 5],[305.0, 4.2, 'K', 6],[365.0, -2, ',', 6]

H
###Magnetization and Magnetoresistance of CeRu2Al10 under High Magnetic Fields along c-Axis|Akihiro Kondo,Junfeng Wang,Koichi Kindo,Tomoaki Takesaka,Yuta Ogane,Yukihiro Kawamura,Takashi Nishioka,Daiki Tanaka,Hiroshi Tanida,Masafumi Sera###
(724608, 724608)
 The magnetization M<missing VAR> atlow temperatures shows an H-linear increase with a small slope of M<missing VAR>/H than thatfor H // a-axis up to  55 T after showing a small anomaly at H  4 T, whichindicates that the critical field to the paramagnetic phase Hcp is higherthan 55 T for H // c<missing VAR>-axis.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 55, 'T', 1],[54.0, 55, 'T', 0],[38.0, 4, 'T', 0],[4.0, 55, 'T', 0],[280.0, 4.2, 'K', 5],[291.0, 4.2, 'K', 6],[351.0, -2, ',', 6]

H
###Magnetization and Magnetoresistance of CeRu2Al10 under High Magnetic Fields along c-Axis|Akihiro Kondo,Junfeng Wang,Koichi Kindo,Tomoaki Takesaka,Yuta Ogane,Yukihiro Kawamura,Takashi Nishioka,Daiki Tanaka,Hiroshi Tanida,Masafumi Sera###
(724626, 724626)
 The magnetization curves for H // a- and c<missing VAR>-axesbelow the antiferro magnetic (AFM) transition temperature T<missing VAR>0 behave as if themagnetic anisotropy in the AFM<missing VAR>-ordered phase is small, although there exists alarge magnetic anisotropy in the paramagnetic phase, which favors the easymagnetization axis along the a-axis.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 55, 'T', 2],[72.0, 55, 'T', 1],[56.0, 4, 'T', 1],[22.0, 55, 'T', 1],[262.0, 4.2, 'K', 4],[273.0, 4.2, 'K', 5],[333.0, -2, ',', 5]

F
###Magnetization and Magnetoresistance of CeRu2Al10 under High Magnetic Fields along c-Axis|Akihiro Kondo,Junfeng Wang,Koichi Kindo,Tomoaki Takesaka,Yuta Ogane,Yukihiro Kawamura,Takashi Nishioka,Daiki Tanaka,Hiroshi Tanida,Masafumi Sera###
(724651, 724651)
 The magnetization curves for H // a- and c<missing VAR>-axesbelow the antiferro magnetic (AFM) transition temperature T<missing VAR>0 behave as if themagnetic anisotropy in the AFM<missing VAR>-ordered phase is small, although there exists alarge magnetic anisotropy in the paramagnetic phase, which favors the easymagnetization axis along the a-axis.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 55, 'T', 2],[97.0, 55, 'T', 1],[81.0, 4, 'T', 1],[47.0, 55, 'T', 1],[237.0, 4.2, 'K', 4],[248.0, 4.2, 'K', 5],[308.0, -2, ',', 5]

F
###Magnetization and Magnetoresistance of CeRu2Al10 under High Magnetic Fields along c-Axis|Akihiro Kondo,Junfeng Wang,Koichi Kindo,Tomoaki Takesaka,Yuta Ogane,Yukihiro Kawamura,Takashi Nishioka,Daiki Tanaka,Hiroshi Tanida,Masafumi Sera###
(724680, 724680)
 The magnetization curves for H // a- and c<missing VAR>-axesbelow the antiferro magnetic (AFM) transition temperature T<missing VAR>0 behave as if themagnetic anisotropy in the AFM<missing VAR>-ordered phase is small, although there exists alarge magnetic anisotropy in the paramagnetic phase, which favors the easymagnetization axis along the a-axis.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, 55, 'T', 2],[126.0, 55, 'T', 1],[110.0, 4, 'T', 1],[76.0, 55, 'T', 1],[208.0, 4.2, 'K', 4],[219.0, 4.2, 'K', 5],[279.0, -2, ',', 5]

F
###Magnetization and Magnetoresistance of CeRu2Al10 under High Magnetic Fields along c-Axis|Akihiro Kondo,Junfeng Wang,Koichi Kindo,Tomoaki Takesaka,Yuta Ogane,Yukihiro Kawamura,Takashi Nishioka,Daiki Tanaka,Hiroshi Tanida,Masafumi Sera###
(724769, 724769)
 have reported that the AFM<missing VAR> order where the magnetic moment isparallel to the c<missing VAR>-axis takes place below T<missing VAR>0.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[275.0, 55, 'T', 4],[215.0, 55, 'T', 3],[199.0, 4, 'T', 3],[165.0, 55, 'T', 3],[119.0, 4.2, 'K', 2],[130.0, 4.2, 'K', 3],[190.0, -2, ',', 3]

F
###Magnetization and Magnetoresistance of CeRu2Al10 under High Magnetic Fields along c-Axis|Akihiro Kondo,Junfeng Wang,Koichi Kindo,Tomoaki Takesaka,Yuta Ogane,Yukihiro Kawamura,Takashi Nishioka,Daiki Tanaka,Hiroshi Tanida,Masafumi Sera###
(724817, 724817)
 These results indicate that theAFM<missing VAR> order in this compound is not a simple one.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[323.0, 55, 'T', 5],[263.0, 55, 'T', 4],[247.0, 4, 'T', 4],[213.0, 55, 'T', 4],[71.0, 4.2, 'K', 1],[82.0, 4.2, 'K', 2],[142.0, -2, ',', 2]

H
###Magnetization and Magnetoresistance of CeRu2Al10 under High Magnetic Fields along c-Axis|Akihiro Kondo,Junfeng Wang,Koichi Kindo,Tomoaki Takesaka,Yuta Ogane,Yukihiro Kawamura,Takashi Nishioka,Daiki Tanaka,Hiroshi Tanida,Masafumi Sera###
(724848, 724848)
 The longitudinalmagnetoresistance for H // c<missing VAR>-axis at low temperatures shows no anomalyoriginating from the phase transition, but shows oscillations below 4.2 K.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[354.0, 55, 'T', 6],[294.0, 55, 'T', 5],[278.0, 4, 'T', 5],[244.0, 55, 'T', 5],[40.0, 4.2, 'K', 0],[51.0, 4.2, 'K', 1],[111.0, -2, ',', 1]

In
###Can layered-structure effects be observed, if the Fermi surface is closed?|P. V. Gorskyi###
(725174, 725174)
 In weak magnetic fields,layered-structure effects manifest themselves as a phase retardation ofShubnikov--de Haas oscillations and a certain increase of the relativecontribution made by the latter.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Can layered-structure effects be observed, if the Fermi surface is closed?|P. V. Gorskyi###
(725240, 725240)
 In the range of high magnetic fields, thereexists an optimal interval, in which the layered-structure effects revealthemselves in the form of a sharp non-monotonous dependence of conductivity onthe magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Can layered-structure effects be observed, if the Fermi surface is closed?|P. V. Gorskyi###
(725316, 725316)
 In addition, it has been shown that the layered-structureeffects result in a decrease of the proportionality factor between themagnetoresistance and the magnetic induction in the longitudinal Kapitsaeffect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B2
###Can layered-structure effects be observed, if the Fermi surface is closed?|P. V. Gorskyi###
(725519, 725520)
 It is shown that the followingdependences of the magnetoresistance on the magnetic field can be obtained,depending on the model used for the filling of the single Landau subband and onwhether the longitudinal conductivity is considered to be of either the driftor diffusion type rhozzpropto T<missing VAR>B2, rhozzpropto B3, andrhozzpropto B4.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B3
###Can layered-structure effects be observed, if the Fermi surface is closed?|P. V. Gorskyi###
(725527, 725528)
 It is shown that the followingdependences of the magnetoresistance on the magnetic field can be obtained,depending on the model used for the filling of the single Landau subband and onwhether the longitudinal conductivity is considered to be of either the driftor diffusion type rhozzpropto T<missing VAR>B2, rhozzpropto B3, andrhozzpropto B4.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B4
###Can layered-structure effects be observed, if the Fermi surface is closed?|P. V. Gorskyi###
(725538, 725539)
 It is shown that the followingdependences of the magnetoresistance on the magnetic field can be obtained,depending on the model used for the filling of the single Landau subband and onwhether the longitudinal conductivity is considered to be of either the driftor diffusion type rhozzpropto T<missing VAR>B2, rhozzpropto B3, andrhozzpropto B4.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magnetoresistance through a single molecule|Stefan Schmaus,Alexei Bagrets,Yasmine Nahas,Toyo K. Yamada,Annika Bork,Martin Bowen,Eric Beaurepaire,Ferdinand Evers,Wulf Wulfhekel###
(725682, 725682)
 In general terms,in order to increase data processing capabilities, one may not only considerthe electrons<missing VAR> charge but also its spin [6,7].
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 6, ',', 0],[95.0, 8, ',', 1],[275.0, 52, '%', 5]

As
###Magnetoresistance through a single molecule|Stefan Schmaus,Alexei Bagrets,Yasmine Nahas,Toyo K. Yamada,Annika Bork,Martin Bowen,Eric Beaurepaire,Ferdinand Evers,Wulf Wulfhekel###
(725815, 725815)
 As an important first step in this field, wehave performed an experimental and theoretical study on spin transport across amolecular GMR junction consisting of two ferromagnetic electrodes bridged by asingle hydrogen phthalocyanine (H2Pc) molecule.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 6, ',', 4],[38.0, 8, ',', 3],[142.0, 52, '%', 1]

H2
###Magnetoresistance through a single molecule|Stefan Schmaus,Alexei Bagrets,Yasmine Nahas,Toyo K. Yamada,Annika Bork,Martin Bowen,Eric Beaurepaire,Ferdinand Evers,Wulf Wulfhekel###
(725892, 725893)
 As an important first step in this field, wehave performed an experimental and theoretical study on spin transport across amolecular GMR junction consisting of two ferromagnetic electrodes bridged by asingle hydrogen phthalocyanine (H2Pc) molecule.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 6, ',', 4],[115.0, 8, ',', 3],[64.0, 52, '%', 1]

H2
###Magnetoresistance through a single molecule|Stefan Schmaus,Alexei Bagrets,Yasmine Nahas,Toyo K. Yamada,Annika Bork,Martin Bowen,Eric Beaurepaire,Ferdinand Evers,Wulf Wulfhekel###
(725911, 725912)
 We observe that even thoughH2Pc in itself is nonmagnetic, incorporating it into a molecular junction canenhance the magnetoresistance by one order of magnitude to 52%.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 6, ',', 5],[134.0, 8, ',', 4],[45.0, 52, '%', 0]

La0.7Ca0.3MnO3/YBa2Cu3O7
###Stray field and superconducting surface spin valve effect in La$_{0.7}$Ca$_{0.3}$MnO$_3$/YBa$_2$Cu$_3$O$_{7-δ}$ bilayers|T. Hu,H. Xiao,C. Visani,J. Santamaria,C. C. Almasan###
(725987, 726001)
Stray field and superconducting surface spin valve effect in La0.7Ca0.3MnO3/YBa2Cu3O7- bilayers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

La0.7Ca0.3MnO3/YBa2Cu3O7
###Stray field and superconducting surface spin valve effect in La$_{0.7}$Ca$_{0.3}$MnO$_3$/YBa$_2$Cu$_3$O$_{7-δ}$ bilayers|T. Hu,H. Xiao,C. Visani,J. Santamaria,C. C. Almasan###
(726024, 726038)
 Electronic transport and magnetization measurements were performed onLa0.7Ca0.3MnO3/YBa2Cu3O7-delta (LCMO/YBCO) bilayersbelow the superconducting transition temperature in order to study theinteraction between magnetism and superconductivity.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

O
###Stray field and superconducting surface spin valve effect in La$_{0.7}$Ca$_{0.3}$MnO$_3$/YBa$_2$Cu$_3$O$_{7-δ}$ bilayers|T. Hu,H. Xiao,C. Visani,J. Santamaria,C. C. Almasan###
(726051, 726051)
 Electronic transport and magnetization measurements were performed onLa0.7Ca0.3MnO3/YBa2Cu3O7-delta (LCMO/YBCO) bilayersbelow the superconducting transition temperature in order to study theinteraction between magnetism and superconductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YBCO
###Stray field and superconducting surface spin valve effect in La$_{0.7}$Ca$_{0.3}$MnO$_3$/YBa$_2$Cu$_3$O$_{7-δ}$ bilayers|T. Hu,H. Xiao,C. Visani,J. Santamaria,C. C. Almasan###
(726120, 726123)
 This study shows that asubstantial number of weakly pinned vortices are induced in the YBCO layer bythe large out-of-plane stray field in the domain walls.
Featurization terminated normally.
0,0,0,0,0.25,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Stray field and superconducting surface spin valve effect in La$_{0.7}$Ca$_{0.3}$MnO$_3$/YBa$_2$Cu$_3$O$_{7-δ}$ bilayers|T. Hu,H. Xiao,C. Visani,J. Santamaria,C. C. Almasan###
(726221, 726221)
 The angular dependentmagnetoresistance (MR) data reveal the interaction between the stripe domainstructure present in the LCMO layer and the vortices and anti-vortices inducedin the YBCO layer by the out-of-plane stray field.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YBCO
###Stray field and superconducting surface spin valve effect in La$_{0.7}$Ca$_{0.3}$MnO$_3$/YBa$_2$Cu$_3$O$_{7-δ}$ bilayers|T. Hu,H. Xiao,C. Visani,J. Santamaria,C. C. Almasan###
(726244, 726247)
 The angular dependentmagnetoresistance (MR) data reveal the interaction between the stripe domainstructure present in the LCMO layer and the vortices and anti-vortices inducedin the YBCO layer by the out-of-plane stray field.
Featurization terminated normally.
0,0,0,0,0.25,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Stray field and superconducting surface spin valve effect in La$_{0.7}$Ca$_{0.3}$MnO$_3$/YBa$_2$Cu$_3$O$_{7-δ}$ bilayers|T. Hu,H. Xiao,C. Visani,J. Santamaria,C. C. Almasan###
(726266, 726266)
 In addition, this studyshows that a superconducting surface spin valve effect is present in thesebilayers as a result of the relative orientation between the magnetization atthe LCMO/YBCO interface and the magnetization in the interior of the LCMO layerthat can be tuned by the rotation of a small H.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O/YBCO
###Stray field and superconducting surface spin valve effect in La$_{0.7}$Ca$_{0.3}$MnO$_3$/YBa$_2$Cu$_3$O$_{7-δ}$ bilayers|T. Hu,H. Xiao,C. Visani,J. Santamaria,C. C. Almasan###
(726331, 726336)
 In addition, this studyshows that a superconducting surface spin valve effect is present in thesebilayers as a result of the relative orientation between the magnetization atthe LCMO/YBCO interface and the magnetization in the interior of the LCMO layerthat can be tuned by the rotation of a small H.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

O
###Stray field and superconducting surface spin valve effect in La$_{0.7}$Ca$_{0.3}$MnO$_3$/YBa$_2$Cu$_3$O$_{7-δ}$ bilayers|T. Hu,H. Xiao,C. Visani,J. Santamaria,C. C. Almasan###
(726359, 726359)
 In addition, this studyshows that a superconducting surface spin valve effect is present in thesebilayers as a result of the relative orientation between the magnetization atthe LCMO/YBCO interface and the magnetization in the interior of the LCMO layerthat can be tuned by the rotation of a small H.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Stray field and superconducting surface spin valve effect in La$_{0.7}$Ca$_{0.3}$MnO$_3$/YBa$_2$Cu$_3$O$_{7-δ}$ bilayers|T. Hu,H. Xiao,C. Visani,J. Santamaria,C. C. Almasan###
(726384, 726384)
 In addition, this studyshows that a superconducting surface spin valve effect is present in thesebilayers as a result of the relative orientation between the magnetization atthe LCMO/YBCO interface and the magnetization in the interior of the LCMO layerthat can be tuned by the rotation of a small H.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Stray field and superconducting surface spin valve effect in La$_{0.7}$Ca$_{0.3}$MnO$_3$/YBa$_2$Cu$_3$O$_{7-δ}$ bilayers|T. Hu,H. Xiao,C. Visani,J. Santamaria,C. C. Almasan###
(726451, 726451)
These low-magnetic field MR data, furthermore, suggest that tripletsuperconductivity is induced in the LCMO layer, which is consistent with recentreports of triplet superconductivity in LCMO/YBCO/LCMO trilayers and LCMO/YBCObilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O/YBCO
###Stray field and superconducting surface spin valve effect in La$_{0.7}$Ca$_{0.3}$MnO$_3$/YBa$_2$Cu$_3$O$_{7-δ}$ bilayers|T. Hu,H. Xiao,C. Visani,J. Santamaria,C. C. Almasan###
(726480, 726485)
These low-magnetic field MR data, furthermore, suggest that tripletsuperconductivity is induced in the LCMO layer, which is consistent with recentreports of triplet superconductivity in LCMO/YBCO/LCMO trilayers and LCMO/YBCObilayers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

O
###Stray field and superconducting surface spin valve effect in La$_{0.7}$Ca$_{0.3}$MnO$_3$/YBa$_2$Cu$_3$O$_{7-δ}$ bilayers|T. Hu,H. Xiao,C. Visani,J. Santamaria,C. C. Almasan###
(726490, 726490)
These low-magnetic field MR data, furthermore, suggest that tripletsuperconductivity is induced in the LCMO layer, which is consistent with recentreports of triplet superconductivity in LCMO/YBCO/LCMO trilayers and LCMO/YBCObilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O/YBCO
###Stray field and superconducting surface spin valve effect in La$_{0.7}$Ca$_{0.3}$MnO$_3$/YBa$_2$Cu$_3$O$_{7-δ}$ bilayers|T. Hu,H. Xiao,C. Visani,J. Santamaria,C. C. Almasan###
(726499, 726504)
These low-magnetic field MR data, furthermore, suggest that tripletsuperconductivity is induced in the LCMO layer, which is consistent with recentreports of triplet superconductivity in LCMO/YBCO/LCMO trilayers and LCMO/YBCObilayers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Nd2-xCe
###Fermi Surface of the Electron-doped Cuprate Superconductor Nd_{2-x}Ce_xCuO_{4} Probed by High-Field Magnetotransport|M. V. Kartsovnik,T. Helm,C. Putzke,F. Wolff-Fabris,I. Sheikin,S. Lepault,C. Proust,D. Vignolles,N. Bittner,W. Biberacher,A. Erb,J. Wosnitza,R. Gross###
(726534, 726538)
Fermi Surface of the Electron-doped Cuprate Superconductor Nd2-xCex<missing VAR>CuO4 Probed by High-Field Magnetotransport.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

CuO4
###Fermi Surface of the Electron-doped Cuprate Superconductor Nd_{2-x}Ce_xCuO_{4} Probed by High-Field Magnetotransport|M. V. Kartsovnik,T. Helm,C. Putzke,F. Wolff-Fabris,I. Sheikin,S. Lepault,C. Proust,D. Vignolles,N. Bittner,W. Biberacher,A. Erb,J. Wosnitza,R. Gross###
(726540, 726542)
Fermi Surface of the Electron-doped Cuprate Superconductor Nd2-xCex<missing VAR>CuO4 Probed by High-Field Magnetotransport.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nd2-xCe
###Fermi Surface of the Electron-doped Cuprate Superconductor Nd_{2-x}Ce_xCuO_{4} Probed by High-Field Magnetotransport|M. V. Kartsovnik,T. Helm,C. Putzke,F. Wolff-Fabris,I. Sheikin,S. Lepault,C. Proust,D. Vignolles,N. Bittner,W. Biberacher,A. Erb,J. Wosnitza,R. Gross###
(726586, 726590)
 We report on the study of the Fermi surface of the electron-doped cupratesuperconductor Nd2-xCex<missing VAR>CuO4 by measuring the interlayermagnetoresistance as a function of the strength and orientation of the appliedmagnetic field.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

CuO4
###Fermi Surface of the Electron-doped Cuprate Superconductor Nd_{2-x}Ce_xCuO_{4} Probed by High-Field Magnetotransport|M. V. Kartsovnik,T. Helm,C. Putzke,F. Wolff-Fabris,I. Sheikin,S. Lepault,C. Proust,D. Vignolles,N. Bittner,W. Biberacher,A. Erb,J. Wosnitza,R. Gross###
(726592, 726594)
 We report on the study of the Fermi surface of the electron-doped cupratesuperconductor Nd2-xCex<missing VAR>CuO4 by measuring the interlayermagnetoresistance as a function of the strength and orientation of the appliedmagnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ce
###Fermi Surface of the Electron-doped Cuprate Superconductor Nd_{2-x}Ce_xCuO_{4} Probed by High-Field Magnetotransport|M. V. Kartsovnik,T. Helm,C. Putzke,F. Wolff-Fabris,I. Sheikin,S. Lepault,C. Proust,D. Vignolles,N. Bittner,W. Biberacher,A. Erb,J. Wosnitza,R. Gross###
(726668, 726668)
 We performed experiments in both steady and pulsed magneticfields on high-quality single crystals with Ce concentrations of x<missing VAR>0.13 to0.17.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Fermi Surface of the Electron-doped Cuprate Superconductor Nd_{2-x}Ce_xCuO_{4} Probed by High-Field Magnetotransport|M. V. Kartsovnik,T. Helm,C. Putzke,F. Wolff-Fabris,I. Sheikin,S. Lepault,C. Proust,D. Vignolles,N. Bittner,W. Biberacher,A. Erb,J. Wosnitza,R. Gross###
(726683, 726683)
 In the overdoped regime of x<missing VAR> > 0.15 we found both semiclassicalangle-dependent magnetoresistance oscillations (AMRO) and Shubnikov-de Haas(SdH) oscillations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Fermi Surface of the Electron-doped Cuprate Superconductor Nd_{2-x}Ce_xCuO_{4} Probed by High-Field Magnetotransport|M. V. Kartsovnik,T. Helm,C. Putzke,F. Wolff-Fabris,I. Sheikin,S. Lepault,C. Proust,D. Vignolles,N. Bittner,W. Biberacher,A. Erb,J. Wosnitza,R. Gross###
(726720, 726720)
 In the overdoped regime of x<missing VAR> > 0.15 we found both semiclassicalangle-dependent magnetoresistance oscillations (AMRO) and Shubnikov-de Haas(SdH) oscillations.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Fermi Surface of the Electron-doped Cuprate Superconductor Nd_{2-x}Ce_xCuO_{4} Probed by High-Field Magnetotransport|M. V. Kartsovnik,T. Helm,C. Putzke,F. Wolff-Fabris,I. Sheikin,S. Lepault,C. Proust,D. Vignolles,N. Bittner,W. Biberacher,A. Erb,J. Wosnitza,R. Gross###
(726734, 726734)
 In the overdoped regime of x<missing VAR> > 0.15 we found both semiclassicalangle-dependent magnetoresistance oscillations (AMRO) and Shubnikov-de Haas(SdH) oscillations.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Fermi Surface of the Electron-doped Cuprate Superconductor Nd_{2-x}Ce_xCuO_{4} Probed by High-Field Magnetotransport|M. V. Kartsovnik,T. Helm,C. Putzke,F. Wolff-Fabris,I. Sheikin,S. Lepault,C. Proust,D. Vignolles,N. Bittner,W. Biberacher,A. Erb,J. Wosnitza,R. Gross###
(726747, 726747)
 The combined AMRO and SdH data clearly show that theappearance of fast SdH oscillations in strongly overdoped samples is caused bymagnetic breakdown.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Fermi Surface of the Electron-doped Cuprate Superconductor Nd_{2-x}Ce_xCuO_{4} Probed by High-Field Magnetotransport|M. V. Kartsovnik,T. Helm,C. Putzke,F. Wolff-Fabris,I. Sheikin,S. Lepault,C. Proust,D. Vignolles,N. Bittner,W. Biberacher,A. Erb,J. Wosnitza,R. Gross###
(726752, 726752)
 The combined AMRO and SdH data clearly show that theappearance of fast SdH oscillations in strongly overdoped samples is caused bymagnetic breakdown.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Fermi Surface of the Electron-doped Cuprate Superconductor Nd_{2-x}Ce_xCuO_{4} Probed by High-Field Magnetotransport|M. V. Kartsovnik,T. Helm,C. Putzke,F. Wolff-Fabris,I. Sheikin,S. Lepault,C. Proust,D. Vignolles,N. Bittner,W. Biberacher,A. Erb,J. Wosnitza,R. Gross###
(726772, 726772)
 The combined AMRO and SdH data clearly show that theappearance of fast SdH oscillations in strongly overdoped samples is caused bymagnetic breakdown.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Fermi Surface of the Electron-doped Cuprate Superconductor Nd_{2-x}Ce_xCuO_{4} Probed by High-Field Magnetotransport|M. V. Kartsovnik,T. Helm,C. Putzke,F. Wolff-Fabris,I. Sheikin,S. Lepault,C. Proust,D. Vignolles,N. Bittner,W. Biberacher,A. Erb,J. Wosnitza,R. Gross###
(726952, 726952)
 A detailed analysis of thehigh-resolution SdH data allowed us to determine the effective cyclotron massand Dingle temperature, as well as to estimate the magnetic breakdown field inthe overdoped regime.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nb/AlAl
###Comparative analysis of tunneling magnetoresistance in low-$T_c$ Nb/AlAlOx/Nb and high-$T_c$ Bi$_{2-y}$Pb$_y$Sr$_2$CaCu$_2$O$_{8+δ}$ intrinsic Josephson junctions|V. M. Krasnov,H. Motzkau,T. Golod,A. Rydh,S. O. Katterwe,A. B. Kulakov###
(727033, 727036)
Comparative analysis of tunneling magnetoresistance in low-Tc Nb/AlAlOx/Nb and high-Tc Bi2-yPby<missing VAR>Sr2CaCu2O8 intrinsic Josephson junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[300.0, 2, '<', 6],[462.0, 2, ',', 9]

Nb
###Comparative analysis of tunneling magnetoresistance in low-$T_c$ Nb/AlAlOx/Nb and high-$T_c$ Bi$_{2-y}$Pb$_y$Sr$_2$CaCu$_2$O$_{8+δ}$ intrinsic Josephson junctions|V. M. Krasnov,H. Motzkau,T. Golod,A. Rydh,S. O. Katterwe,A. B. Kulakov###
(727039, 727039)
Comparative analysis of tunneling magnetoresistance in low-Tc Nb/AlAlOx/Nb and high-Tc Bi2-yPby<missing VAR>Sr2CaCu2O8 intrinsic Josephson junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[297.0, 2, '<', 6],[459.0, 2, ',', 9]

Bi2-yPb
###Comparative analysis of tunneling magnetoresistance in low-$T_c$ Nb/AlAlOx/Nb and high-$T_c$ Bi$_{2-y}$Pb$_y$Sr$_2$CaCu$_2$O$_{8+δ}$ intrinsic Josephson junctions|V. M. Krasnov,H. Motzkau,T. Golod,A. Rydh,S. O. Katterwe,A. B. Kulakov###
(727048, 727052)
Comparative analysis of tunneling magnetoresistance in low-Tc Nb/AlAlOx/Nb and high-Tc Bi2-yPby<missing VAR>Sr2CaCu2O8 intrinsic Josephson junctions.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[284.0, 2, '<', 6],[446.0, 2, ',', 9]

Sr2CaCu2O8
###Comparative analysis of tunneling magnetoresistance in low-$T_c$ Nb/AlAlOx/Nb and high-$T_c$ Bi$_{2-y}$Pb$_y$Sr$_2$CaCu$_2$O$_{8+δ}$ intrinsic Josephson junctions|V. M. Krasnov,H. Motzkau,T. Golod,A. Rydh,S. O. Katterwe,A. B. Kulakov###
(727054, 727060)
Comparative analysis of tunneling magnetoresistance in low-Tc Nb/AlAlOx/Nb and high-Tc Bi2-yPby<missing VAR>Sr2CaCu2O8 intrinsic Josephson junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6153846153846154,0,0,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0.15384615384615385,0,0,0,0,0,0,0,0,0.15384615384615385,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[276.0, 2, '<', 6],[438.0, 2, ',', 9]

Nb/AlAl
###Comparative analysis of tunneling magnetoresistance in low-$T_c$ Nb/AlAlOx/Nb and high-$T_c$ Bi$_{2-y}$Pb$_y$Sr$_2$CaCu$_2$O$_{8+δ}$ intrinsic Josephson junctions|V. M. Krasnov,H. Motzkau,T. Golod,A. Rydh,S. O. Katterwe,A. B. Kulakov###
(727093, 727096)
 We perform a detailed comparison of magnetotunneling in conventionallow-Tc Nb/AlAlOx/Nb junctions with that in slightly overdopedBi2-yPby<missing VAR>Sr2CaCu2O8delta [Bi(Pb)-2212] intrinsic Josephsonjunctions and with microscopic calculations.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[240.0, 2, '<', 5],[402.0, 2, ',', 8]

Nb
###Comparative analysis of tunneling magnetoresistance in low-$T_c$ Nb/AlAlOx/Nb and high-$T_c$ Bi$_{2-y}$Pb$_y$Sr$_2$CaCu$_2$O$_{8+δ}$ intrinsic Josephson junctions|V. M. Krasnov,H. Motzkau,T. Golod,A. Rydh,S. O. Katterwe,A. B. Kulakov###
(727099, 727099)
 We perform a detailed comparison of magnetotunneling in conventionallow-Tc Nb/AlAlOx/Nb junctions with that in slightly overdopedBi2-yPby<missing VAR>Sr2CaCu2O8delta [Bi(Pb)-2212] intrinsic Josephsonjunctions and with microscopic calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[237.0, 2, '<', 5],[399.0, 2, ',', 8]

Bi2-yPb
###Comparative analysis of tunneling magnetoresistance in low-$T_c$ Nb/AlAlOx/Nb and high-$T_c$ Bi$_{2-y}$Pb$_y$Sr$_2$CaCu$_2$O$_{8+δ}$ intrinsic Josephson junctions|V. M. Krasnov,H. Motzkau,T. Golod,A. Rydh,S. O. Katterwe,A. B. Kulakov###
(727114, 727118)
 We perform a detailed comparison of magnetotunneling in conventionallow-Tc Nb/AlAlOx/Nb junctions with that in slightly overdopedBi2-yPby<missing VAR>Sr2CaCu2O8delta [Bi(Pb)-2212] intrinsic Josephsonjunctions and with microscopic calculations.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[218.0, 2, '<', 5],[380.0, 2, ',', 8]

Sr2CaCu2O8
###Comparative analysis of tunneling magnetoresistance in low-$T_c$ Nb/AlAlOx/Nb and high-$T_c$ Bi$_{2-y}$Pb$_y$Sr$_2$CaCu$_2$O$_{8+δ}$ intrinsic Josephson junctions|V. M. Krasnov,H. Motzkau,T. Golod,A. Rydh,S. O. Katterwe,A. B. Kulakov###
(727120, 727126)
 We perform a detailed comparison of magnetotunneling in conventionallow-Tc Nb/AlAlOx/Nb junctions with that in slightly overdopedBi2-yPby<missing VAR>Sr2CaCu2O8delta [Bi(Pb)-2212] intrinsic Josephsonjunctions and with microscopic calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6153846153846154,0,0,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0.15384615384615385,0,0,0,0,0,0,0,0,0.15384615384615385,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[210.0, 2, '<', 5],[372.0, 2, ',', 8]

Bi(Pb)
###Comparative analysis of tunneling magnetoresistance in low-$T_c$ Nb/AlAlOx/Nb and high-$T_c$ Bi$_{2-y}$Pb$_y$Sr$_2$CaCu$_2$O$_{8+δ}$ intrinsic Josephson junctions|V. M. Krasnov,H. Motzkau,T. Golod,A. Rydh,S. O. Katterwe,A. B. Kulakov###
(727130, 727133)
 We perform a detailed comparison of magnetotunneling in conventionallow-Tc Nb/AlAlOx/Nb junctions with that in slightly overdopedBi2-yPby<missing VAR>Sr2CaCu2O8delta [Bi(Pb)-2212] intrinsic Josephsonjunctions and with microscopic calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[203.0, 2, '<', 5],[365.0, 2, ',', 8]

H
###Comparative analysis of tunneling magnetoresistance in low-$T_c$ Nb/AlAlOx/Nb and high-$T_c$ Bi$_{2-y}$Pb$_y$Sr$_2$CaCu$_2$O$_{8+δ}$ intrinsic Josephson junctions|V. M. Krasnov,H. Motzkau,T. Golod,A. Rydh,S. O. Katterwe,A. B. Kulakov###
(727310, 727310)
 We derivedtheoretically and verified experimentally scaling laws of magnetotunnelingcharacteristics and employ them for accurate extraction of the upper criticalfield Hc<missing VAR>2.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 2, '<', 1],[188.0, 2, ',', 4]

Nb
###Comparative analysis of tunneling magnetoresistance in low-$T_c$ Nb/AlAlOx/Nb and high-$T_c$ Bi$_{2-y}$Pb$_y$Sr$_2$CaCu$_2$O$_{8+δ}$ intrinsic Josephson junctions|V. M. Krasnov,H. Motzkau,T. Golod,A. Rydh,S. O. Katterwe,A. B. Kulakov###
(727317, 727317)
 For Nb an extended region of surface superconductivity atHc<missing VAR>2<H<Hc<missing VAR>3 is observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 2, '<', 0],[181.0, 2, ',', 3]

H
###Comparative analysis of tunneling magnetoresistance in low-$T_c$ Nb/AlAlOx/Nb and high-$T_c$ Bi$_{2-y}$Pb$_y$Sr$_2$CaCu$_2$O$_{8+δ}$ intrinsic Josephson junctions|V. M. Krasnov,H. Motzkau,T. Golod,A. Rydh,S. O. Katterwe,A. B. Kulakov###
(727334, 727334)
 For Nb an extended region of surface superconductivity atHc<missing VAR>2<H<Hc<missing VAR>3 is observed.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 2, '<', 0],[164.0, 2, ',', 3]

H
###Comparative analysis of tunneling magnetoresistance in low-$T_c$ Nb/AlAlOx/Nb and high-$T_c$ Bi$_{2-y}$Pb$_y$Sr$_2$CaCu$_2$O$_{8+δ}$ intrinsic Josephson junctions|V. M. Krasnov,H. Motzkau,T. Golod,A. Rydh,S. O. Katterwe,A. B. Kulakov###
(727338, 727338)
 For Nb an extended region of surface superconductivity atHc<missing VAR>2<H<Hc<missing VAR>3 is observed.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 2, '<', 0],[160.0, 2, ',', 3]

H
###Comparative analysis of tunneling magnetoresistance in low-$T_c$ Nb/AlAlOx/Nb and high-$T_c$ Bi$_{2-y}$Pb$_y$Sr$_2$CaCu$_2$O$_{8+δ}$ intrinsic Josephson junctions|V. M. Krasnov,H. Motzkau,T. Golod,A. Rydh,S. O. Katterwe,A. B. Kulakov###
(727340, 727340)
 For Nb an extended region of surface superconductivity atHc<missing VAR>2<H<Hc<missing VAR>3 is observed.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 2, '<', 0],[158.0, 2, ',', 3]

Bi(Pb)
###Comparative analysis of tunneling magnetoresistance in low-$T_c$ Nb/AlAlOx/Nb and high-$T_c$ Bi$_{2-y}$Pb$_y$Sr$_2$CaCu$_2$O$_{8+δ}$ intrinsic Josephson junctions|V. M. Krasnov,H. Motzkau,T. Golod,A. Rydh,S. O. Katterwe,A. B. Kulakov###
(727355, 727358)
 The parameters of Bi(Pb)-2212 were obtained fromself-consistent analysis of magnetotunneling data at different levels of bias,dissipation powers and for different mesa sizes, which precludes the influenceof self-heating.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 2, '<', 1],[140.0, 2, ',', 2]

H
###Comparative analysis of tunneling magnetoresistance in low-$T_c$ Nb/AlAlOx/Nb and high-$T_c$ Bi$_{2-y}$Pb$_y$Sr$_2$CaCu$_2$O$_{8+δ}$ intrinsic Josephson junctions|V. M. Krasnov,H. Motzkau,T. Golod,A. Rydh,S. O. Katterwe,A. B. Kulakov###
(727432, 727432)
 It is found that Hc<missing VAR>2(0) for Bi(Pb)-2212 is simeq 70 T<missing VAR>and decreases significantly at T<missing VAR>rightarrow Tc.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 2, '<', 2],[66.0, 2, ',', 1]

Bi(Pb)
###Comparative analysis of tunneling magnetoresistance in low-$T_c$ Nb/AlAlOx/Nb and high-$T_c$ Bi$_{2-y}$Pb$_y$Sr$_2$CaCu$_2$O$_{8+δ}$ intrinsic Josephson junctions|V. M. Krasnov,H. Motzkau,T. Golod,A. Rydh,S. O. Katterwe,A. B. Kulakov###
(727441, 727444)
 It is found that Hc<missing VAR>2(0) for Bi(Pb)-2212 is simeq 70 T<missing VAR>and decreases significantly at T<missing VAR>rightarrow Tc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 2, '<', 2],[54.0, 2, ',', 1]

In
###Multiple photoexcitation of two-dimensional electron systems: bichromatic magnetoresistance oscillations revisited|Jesus Inarrea###
(727646, 727646)
 Inparticular, we study the influence on the striking effect of microwave-inducedresistance oscillations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Alternating Superconductor--Insulator Transport Characteristics in a Quantum Vortex Chain|Yeshayahu Atzmon,Efrat Shimshoni###
(728050, 728050)
 Experimental studies of magnetoresistance in thin superconducting stripssubject to a perpendicular magnetic field B exhibit a multitude of transitions,from superconductor to insulator and vice versa alternately.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Alternating Superconductor--Insulator Transport Characteristics in a Quantum Vortex Chain|Yeshayahu Atzmon,Efrat Shimshoni###
(728138, 728138)
 In this regime, strong quantum fluctuations dominate the dynamicsof the vortex chain forming along the device.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Alternating Superconductor--Insulator Transport Characteristics in a Quantum Vortex Chain|Yeshayahu Atzmon,Efrat Shimshoni###
(728222, 728222)
 Utilizing a mapping of the vortexsystem at low energies to one-dimensional (1D) Fermions at a chemical potentialdictated by B, we find that a quantum phase transition of the Ising type occursat critical values of the vortex filling, from a superconducting phase nearinteger filling to an insulator near 1/2-filling.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Alternating Superconductor--Insulator Transport Characteristics in a Quantum Vortex Chain|Yeshayahu Atzmon,Efrat Shimshoni###
(728303, 728303)
 The current--voltage (I-V)characteristics of the weakly disordered device in the presence of a d.c.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Alternating Superconductor--Insulator Transport Characteristics in a Quantum Vortex Chain|Yeshayahu Atzmon,Efrat Shimshoni###
(728305, 728305)
 The current--voltage (I-V)characteristics of the weakly disordered device in the presence of a d.c.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Alternating Superconductor--Insulator Transport Characteristics in a Quantum Vortex Chain|Yeshayahu Atzmon,Efrat Shimshoni###
(728341, 728341)
current bias I is evaluated, and investigated as a function of B, I, thetemperature T<missing VAR> and the disorder strength.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Alternating Superconductor--Insulator Transport Characteristics in a Quantum Vortex Chain|Yeshayahu Atzmon,Efrat Shimshoni###
(728360, 728360)
current bias I is evaluated, and investigated as a function of B, I, thetemperature T<missing VAR> and the disorder strength.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Alternating Superconductor--Insulator Transport Characteristics in a Quantum Vortex Chain|Yeshayahu Atzmon,Efrat Shimshoni###
(728363, 728363)
current bias I is evaluated, and investigated as a function of B, I, thetemperature T<missing VAR> and the disorder strength.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Alternating Superconductor--Insulator Transport Characteristics in a Quantum Vortex Chain|Yeshayahu Atzmon,Efrat Shimshoni###
(728382, 728382)
 In the Ohmic regime (I/e<missing VAR> << T), theresulting magnetoresistance R<missing VAR>(B) exhibits oscillations similar to theexperimental observation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Alternating Superconductor--Insulator Transport Characteristics in a Quantum Vortex Chain|Yeshayahu Atzmon,Efrat Shimshoni###
(728391, 728391)
 In the Ohmic regime (I/e<missing VAR> << T), theresulting magnetoresistance R<missing VAR>(B) exhibits oscillations similar to theexperimental observation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(B)
###Alternating Superconductor--Insulator Transport Characteristics in a Quantum Vortex Chain|Yeshayahu Atzmon,Efrat Shimshoni###
(728410, 728412)
 In the Ohmic regime (I/e<missing VAR> << T), theresulting magnetoresistance R<missing VAR>(B) exhibits oscillations similar to theexperimental observation.
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Alternating Superconductor--Insulator Transport Characteristics in a Quantum Vortex Chain|Yeshayahu Atzmon,Efrat Shimshoni###
(728443, 728443)
 More generally, we find that the I-V characteristicsof the system manifests a dramatically distinct behavior in the superconductingand insulating regimes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Alternating Superconductor--Insulator Transport Characteristics in a Quantum Vortex Chain|Yeshayahu Atzmon,Efrat Shimshoni###
(728445, 728445)
 More generally, we find that the I-V characteristicsof the system manifests a dramatically distinct behavior in the superconductingand insulating regimes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PtSn4
###Magnetic Field Effects on Transport Properties of PtSn4|Eundeok Mun,Hyunjin Ko,Gordon J. Miller,German D. Samolyuk,Sergey L. Bud'ko,Paul. C. Canfield###
(728502, 728504)
Magnetic Field Effects on Transport Properties of PtSn4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 140, 'kOe', 1],[125.0, 5, 'kOe', 3],[138.0, 30, 'K', 3],[203.0, 140, 'kOe', 5],[215.0, 50, 'mu', 5],[245.0, 5, 'x', 6],[247.0, 5, '%', 6],[263.0, 1.4, 'x', 6],[265.0, 5, '%', 6],[279.0, 1.8, 'K', 6],[282.0, 140, 'kOe', 6],[375.0, 25, 'K', 8]

PtSn4
###Magnetic Field Effects on Transport Properties of PtSn4|Eundeok Mun,Hyunjin Ko,Gordon J. Miller,German D. Samolyuk,Sergey L. Bud'ko,Paul. C. Canfield###
(728525, 728527)
 The anisotropic physical properties of single crystals of orthorhombic PtSn4are reported for magnetic fields up to 140 kOe, applied parallel andperpendicular to the crystallographic b<missing VAR>-axis.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 140, 'kOe', 0],[102.0, 5, 'kOe', 2],[115.0, 30, 'K', 2],[180.0, 140, 'kOe', 4],[192.0, 50, 'mu', 4],[222.0, 5, 'x', 5],[224.0, 5, '%', 5],[240.0, 1.4, 'x', 5],[242.0, 5, '%', 5],[256.0, 1.8, 'K', 5],[259.0, 140, 'kOe', 5],[352.0, 25, 'K', 7]

PtSn4
###Magnetic Field Effects on Transport Properties of PtSn4|Eundeok Mun,Hyunjin Ko,Gordon J. Miller,German D. Samolyuk,Sergey L. Bud'ko,Paul. C. Canfield###
(728668, 728670)
 The thermoelectric power and resistivity of PtSn4 show the strongtemperature and magnetic field dependencies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 140, 'kOe', 3],[39.0, 5, 'kOe', 1],[26.0, 30, 'K', 1],[37.0, 140, 'kOe', 1],[49.0, 50, 'mu', 1],[79.0, 5, 'x', 2],[81.0, 5, '%', 2],[97.0, 1.4, 'x', 2],[99.0, 5, '%', 2],[113.0, 1.8, 'K', 2],[116.0, 140, 'kOe', 2],[209.0, 25, 'K', 4]

H
###Magnetic Field Effects on Transport Properties of PtSn4|Eundeok Mun,Hyunjin Ko,Gordon J. Miller,German D. Samolyuk,Sergey L. Bud'ko,Paul. C. Canfield###
(728705, 728705)
 A change of the thermoelectricpower at H  140 kOe is observed as high as  50 mu-V/K.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 140, 'kOe', 4],[76.0, 5, 'kOe', 2],[63.0, 30, 'K', 2],[2.0, 140, 'kOe', 0],[14.0, 50, 'mu', 0],[44.0, 5, 'x', 1],[46.0, 5, '%', 1],[62.0, 1.4, 'x', 1],[64.0, 5, '%', 1],[78.0, 1.8, 'K', 1],[81.0, 140, 'kOe', 1],[174.0, 25, 'K', 3]

V/K
###Magnetic Field Effects on Transport Properties of PtSn4|Eundeok Mun,Hyunjin Ko,Gordon J. Miller,German D. Samolyuk,Sergey L. Bud'ko,Paul. C. Canfield###
(728721, 728723)
 A change of the thermoelectricpower at H  140 kOe is observed as high as  50 mu-V/K.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[178.0, 140, 'kOe', 4],[92.0, 5, 'kOe', 2],[79.0, 30, 'K', 2],[14.0, 140, 'kOe', 0],[2.0, 50, 'mu', 0],[26.0, 5, 'x', 1],[28.0, 5, '%', 1],[44.0, 1.4, 'x', 1],[46.0, 5, '%', 1],[60.0, 1.8, 'K', 1],[63.0, 140, 'kOe', 1],[156.0, 25, 'K', 3]

PtSn4
###Magnetic Field Effects on Transport Properties of PtSn4|Eundeok Mun,Hyunjin Ko,Gordon J. Miller,German D. Samolyuk,Sergey L. Bud'ko,Paul. C. Canfield###
(728733, 728735)
 Single crystals ofPtSn4 exhibit very large transverse magnetoresistance of  5x105% for theac-plane and of  1.4x105% for the b<missing VAR>-axis resistivity at 1.8 K and 140 kOe, aswell as pronounced Shubnikov-de Haas oscillations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[190.0, 140, 'kOe', 5],[104.0, 5, 'kOe', 3],[91.0, 30, 'K', 3],[26.0, 140, 'kOe', 1],[14.0, 50, 'mu', 1],[14.0, 5, 'x', 0],[16.0, 5, '%', 0],[32.0, 1.4, 'x', 0],[34.0, 5, '%', 0],[48.0, 1.8, 'K', 0],[51.0, 140, 'kOe', 0],[144.0, 25, 'K', 2]

PtSn4
###Magnetic Field Effects on Transport Properties of PtSn4|Eundeok Mun,Hyunjin Ko,Gordon J. Miller,German D. Samolyuk,Sergey L. Bud'ko,Paul. C. Canfield###
(728814, 728816)
 The magnetoresistance ofPtSn4 appears to obey Kohlers<missing VAR> rule in the temperature and field rangemeasured.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[271.0, 140, 'kOe', 6],[185.0, 5, 'kOe', 4],[172.0, 30, 'K', 4],[107.0, 140, 'kOe', 2],[95.0, 50, 'mu', 2],[65.0, 5, 'x', 1],[63.0, 5, '%', 1],[47.0, 1.4, 'x', 1],[45.0, 5, '%', 1],[31.0, 1.8, 'K', 1],[28.0, 140, 'kOe', 1],[63.0, 25, 'K', 1]

PtSn4
###Magnetic Field Effects on Transport Properties of PtSn4|Eundeok Mun,Hyunjin Ko,Gordon J. Miller,German D. Samolyuk,Sergey L. Bud'ko,Paul. C. Canfield###
(728918, 728920)
 The observed quantum oscillations and bandstructure calculations indicate that PtSn4 has three dimensional Fermisurfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[375.0, 140, 'kOe', 8],[289.0, 5, 'kOe', 6],[276.0, 30, 'K', 6],[211.0, 140, 'kOe', 4],[199.0, 50, 'mu', 4],[169.0, 5, 'x', 3],[167.0, 5, '%', 3],[151.0, 1.4, 'x', 3],[149.0, 5, '%', 3],[135.0, 1.8, 'K', 3],[132.0, 140, 'kOe', 3],[39.0, 25, 'K', 1]

Sr2RuO4
###Unconventional quantum oscillations in mesoscopic rings of spin-triplet superconductor Sr2RuO4|X. Cai,Y. A. Ying,N. E. Staley,Y. Xin,D. Fobes,T. J. Liu,Z. Q. Mao,Y. Liu###
(728962, 728966)
Unconventional quantum oscillations in mesoscopic rings of spin-triplet superconductor Sr2RuO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr2RuO4
###Unconventional quantum oscillations in mesoscopic rings of spin-triplet superconductor Sr2RuO4|X. Cai,Y. A. Ying,N. E. Staley,Y. Xin,D. Fobes,T. J. Liu,Z. Q. Mao,Y. Liu###
(728980, 728984)
 Odd-parity, spin-triplet superconductor Sr2RuO4 has been found to featureexotic vortex physics including half-flux quanta trapped in a doubly connectedsample and the formation of vortex lattices at low fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr2RuO4
###Unconventional quantum oscillations in mesoscopic rings of spin-triplet superconductor Sr2RuO4|X. Cai,Y. A. Ying,N. E. Staley,Y. Xin,D. Fobes,T. J. Liu,Z. Q. Mao,Y. Liu###
(729077, 729081)
 The consequences ofthese vortex states on the low-temperature magnetoresistive behavior ofmesoscopic samples of Sr2RuO4 were investigated in this work using ring devicefabricated on mechanically exfoliated single crystals of Sr2RuO4 byphotolithography and focused ion beam.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr2RuO4
###Unconventional quantum oscillations in mesoscopic rings of spin-triplet superconductor Sr2RuO4|X. Cai,Y. A. Ying,N. E. Staley,Y. Xin,D. Fobes,T. J. Liu,Z. Q. Mao,Y. Liu###
(729114, 729118)
 The consequences ofthese vortex states on the low-temperature magnetoresistive behavior ofmesoscopic samples of Sr2RuO4 were investigated in this work using ring devicefabricated on mechanically exfoliated single crystals of Sr2RuO4 byphotolithography and focused ion beam.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr2RuO4
###Unconventional quantum oscillations in mesoscopic rings of spin-triplet superconductor Sr2RuO4|X. Cai,Y. A. Ying,N. E. Staley,Y. Xin,D. Fobes,T. J. Liu,Z. Q. Mao,Y. Liu###
(729166, 729170)
 With the magnetic field appliedperpendicular to the in-plane direction, thin-wall rings of Sr2RuO4 were foundto exhibit pronounced quantum oscillations with a conventional period of thefull-flux quantum even though the unexpectedly large amplitude and the numberof oscillations suggest the observation of vortex-flow-dominatedmagnetoresistance oscillations rather than a conventional Little-Parks effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

No
###Unconventional quantum oscillations in mesoscopic rings of spin-triplet superconductor Sr2RuO4|X. Cai,Y. A. Ying,N. E. Staley,Y. Xin,D. Fobes,T. J. Liu,Z. Q. Mao,Y. Liu###
(729350, 729350)
 Noevidence for half-flux-quantum resistance oscillations were identified in anysample measured so far without the presence of an in-plane field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0
Abstract does not contain any numbers.

Fe0.5TiS2
###Field-induced high coercive ferromagnetic state and magnetoresistance in the antiferromagnetically ordered compound Fe0.5TiS2|N. V. Baranov,E. M. Sherokalova,A. S. Volegov,A. V. Proshkin,N. V. Selezneva,E. P. Proskurina###
(729435, 729439)
Field-induced high coercive ferromagnetic state and magnetoresistance in the antiferromagnetically ordered compound Fe0.5TiS2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0.2857142857142857,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 1100, 'Celsius', 3],[240.0, 140, 'K', 4],[340.0, 100, 'K', 6],[378.0, 100, 'kOe', 7]

Fe
###Field-induced high coercive ferromagnetic state and magnetoresistance in the antiferromagnetically ordered compound Fe0.5TiS2|N. V. Baranov,E. M. Sherokalova,A. S. Volegov,A. V. Proshkin,N. V. Selezneva,E. P. Proskurina###
(729477, 729477)
 The measurements of the magnetic susceptibility, magnetization, electricalresistivity and magnetoresistance have been performed for the Fe intercalatedcompound Fe0.5TiS2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 1100, 'Celsius', 2],[202.0, 140, 'K', 3],[302.0, 100, 'K', 5],[340.0, 100, 'kOe', 6]

Fe0.5TiS2
###Field-induced high coercive ferromagnetic state and magnetoresistance in the antiferromagnetically ordered compound Fe0.5TiS2|N. V. Baranov,E. M. Sherokalova,A. S. Volegov,A. V. Proshkin,N. V. Selezneva,E. P. Proskurina###
(729484, 729488)
 The measurements of the magnetic susceptibility, magnetization, electricalresistivity and magnetoresistance have been performed for the Fe intercalatedcompound Fe0.5TiS2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0.2857142857142857,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 1100, 'Celsius', 2],[191.0, 140, 'K', 3],[291.0, 100, 'K', 5],[329.0, 100, 'kOe', 6]

Fe0.5TiS2
###Field-induced high coercive ferromagnetic state and magnetoresistance in the antiferromagnetically ordered compound Fe0.5TiS2|N. V. Baranov,E. M. Sherokalova,A. S. Volegov,A. V. Proshkin,N. V. Selezneva,E. P. Proskurina###
(729505, 729509)
 According to X<missing VAR>-ray diffraction measurements the Fe0.5TiS2compound synthesized in the present work has a monoclinic crystal structure(space group I12/m<missing VAR>1) which results from the ordering of Fe ions and vacanciesbetween S-Ti-S tri-layres.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0.2857142857142857,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 1100, 'Celsius', 1],[170.0, 140, 'K', 2],[270.0, 100, 'K', 4],[308.0, 100, 'kOe', 5]

I12
###Field-induced high coercive ferromagnetic state and magnetoresistance in the antiferromagnetically ordered compound Fe0.5TiS2|N. V. Baranov,E. M. Sherokalova,A. S. Volegov,A. V. Proshkin,N. V. Selezneva,E. P. Proskurina###
(729540, 729541)
 According to X<missing VAR>-ray diffraction measurements the Fe0.5TiS2compound synthesized in the present work has a monoclinic crystal structure(space group I12/m<missing VAR>1) which results from the ordering of Fe ions and vacanciesbetween S-Ti-S tri-layres.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 1100, 'Celsius', 1],[138.0, 140, 'K', 2],[238.0, 100, 'K', 4],[276.0, 100, 'kOe', 5]

Fe
###Field-induced high coercive ferromagnetic state and magnetoresistance in the antiferromagnetically ordered compound Fe0.5TiS2|N. V. Baranov,E. M. Sherokalova,A. S. Volegov,A. V. Proshkin,N. V. Selezneva,E. P. Proskurina###
(729559, 729559)
 According to X<missing VAR>-ray diffraction measurements the Fe0.5TiS2compound synthesized in the present work has a monoclinic crystal structure(space group I12/m<missing VAR>1) which results from the ordering of Fe ions and vacanciesbetween S-Ti-S tri-layres.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 1100, 'Celsius', 1],[120.0, 140, 'K', 2],[220.0, 100, 'K', 4],[258.0, 100, 'kOe', 5]

S
###Field-induced high coercive ferromagnetic state and magnetoresistance in the antiferromagnetically ordered compound Fe0.5TiS2|N. V. Baranov,E. M. Sherokalova,A. S. Volegov,A. V. Proshkin,N. V. Selezneva,E. P. Proskurina###
(729570, 729570)
 According to X<missing VAR>-ray diffraction measurements the Fe0.5TiS2compound synthesized in the present work has a monoclinic crystal structure(space group I12/m<missing VAR>1) which results from the ordering of Fe ions and vacanciesbetween S-Ti-S tri-layres.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 1100, 'Celsius', 1],[109.0, 140, 'K', 2],[209.0, 100, 'K', 4],[247.0, 100, 'kOe', 5]

Ti
###Field-induced high coercive ferromagnetic state and magnetoresistance in the antiferromagnetically ordered compound Fe0.5TiS2|N. V. Baranov,E. M. Sherokalova,A. S. Volegov,A. V. Proshkin,N. V. Selezneva,E. P. Proskurina###
(729572, 729572)
 According to X<missing VAR>-ray diffraction measurements the Fe0.5TiS2compound synthesized in the present work has a monoclinic crystal structure(space group I12/m<missing VAR>1) which results from the ordering of Fe ions and vacanciesbetween S-Ti-S tri-layres.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 1100, 'Celsius', 1],[107.0, 140, 'K', 2],[207.0, 100, 'K', 4],[245.0, 100, 'kOe', 5]

S
###Field-induced high coercive ferromagnetic state and magnetoresistance in the antiferromagnetically ordered compound Fe0.5TiS2|N. V. Baranov,E. M. Sherokalova,A. S. Volegov,A. V. Proshkin,N. V. Selezneva,E. P. Proskurina###
(729574, 729574)
 According to X<missing VAR>-ray diffraction measurements the Fe0.5TiS2compound synthesized in the present work has a monoclinic crystal structure(space group I12/m<missing VAR>1) which results from the ordering of Fe ions and vacanciesbetween S-Ti-S tri-layres.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 1100, 'Celsius', 1],[105.0, 140, 'K', 2],[205.0, 100, 'K', 4],[243.0, 100, 'kOe', 5]

Fe
###Field-induced high coercive ferromagnetic state and magnetoresistance in the antiferromagnetically ordered compound Fe0.5TiS2|N. V. Baranov,E. M. Sherokalova,A. S. Volegov,A. V. Proshkin,N. V. Selezneva,E. P. Proskurina###
(729632, 729632)
 The changes in the heat-treatment conditions attemperatures below 1100 Celsius degrees do not lead to an order-disordertransition within the subsystem of intercalated Fe ions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 1100, 'Celsius', 0],[47.0, 140, 'K', 1],[147.0, 100, 'K', 3],[185.0, 100, 'kOe', 4]

F
###Field-induced high coercive ferromagnetic state and magnetoresistance in the antiferromagnetically ordered compound Fe0.5TiS2|N. V. Baranov,E. M. Sherokalova,A. S. Volegov,A. V. Proshkin,N. V. Selezneva,E. P. Proskurina###
(729660, 729660)
 It has been shown thatthis compound exhibits an antiferromagnetic (AF) ground state below the Neeltemperature T<missing VAR>N  140 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 1100, 'Celsius', 1],[19.0, 140, 'K', 0],[119.0, 100, 'K', 2],[157.0, 100, 'kOe', 3]

N
###Field-induced high coercive ferromagnetic state and magnetoresistance in the antiferromagnetically ordered compound Fe0.5TiS2|N. V. Baranov,E. M. Sherokalova,A. S. Volegov,A. V. Proshkin,N. V. Selezneva,E. P. Proskurina###
(729677, 729677)
 It has been shown thatthis compound exhibits an antiferromagnetic (AF) ground state below the Neeltemperature T<missing VAR>N  140 K.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 1100, 'Celsius', 1],[2.0, 140, 'K', 0],[102.0, 100, 'K', 2],[140.0, 100, 'kOe', 3]

N
###Field-induced high coercive ferromagnetic state and magnetoresistance in the antiferromagnetically ordered compound Fe0.5TiS2|N. V. Baranov,E. M. Sherokalova,A. S. Volegov,A. V. Proshkin,N. V. Selezneva,E. P. Proskurina###
(729699, 729699)
 Application of the magnetic field at T<missing VAR> < T<missing VAR>N induces ametamagnetic phase transition to the ferromagnetic (F) state, which isaccompanied by the large magnetoresistance effect (up to 27 %).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 1100, 'Celsius', 2],[20.0, 140, 'K', 1],[80.0, 100, 'K', 1],[118.0, 100, 'kOe', 2]

(F)
###Field-induced high coercive ferromagnetic state and magnetoresistance in the antiferromagnetically ordered compound Fe0.5TiS2|N. V. Baranov,E. M. Sherokalova,A. S. Volegov,A. V. Proshkin,N. V. Selezneva,E. P. Proskurina###
(729718, 729720)
 Application of the magnetic field at T<missing VAR> < T<missing VAR>N induces ametamagnetic phase transition to the ferromagnetic (F) state, which isaccompanied by the large magnetoresistance effect (up to 27 %).
Featurization successful!
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 1100, 'Celsius', 2],[39.0, 140, 'K', 1],[59.0, 100, 'K', 1],[97.0, 100, 'kOe', 2]

F
###Field-induced high coercive ferromagnetic state and magnetoresistance in the antiferromagnetically ordered compound Fe0.5TiS2|N. V. Baranov,E. M. Sherokalova,A. S. Volegov,A. V. Proshkin,N. V. Selezneva,E. P. Proskurina###
(729761, 729761)
 Thefield-induced AF-F transition is found to be irreversible below  100 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 1100, 'Celsius', 3],[82.0, 140, 'K', 2],[18.0, 100, 'K', 0],[56.0, 100, 'kOe', 1]

F
###Field-induced high coercive ferromagnetic state and magnetoresistance in the antiferromagnetically ordered compound Fe0.5TiS2|N. V. Baranov,E. M. Sherokalova,A. S. Volegov,A. V. Proshkin,N. V. Selezneva,E. P. Proskurina###
(729763, 729763)
 Thefield-induced AF-F transition is found to be irreversible below  100 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 1100, 'Celsius', 3],[84.0, 140, 'K', 2],[16.0, 100, 'K', 0],[54.0, 100, 'kOe', 1]

F
###Field-induced high coercive ferromagnetic state and magnetoresistance in the antiferromagnetically ordered compound Fe0.5TiS2|N. V. Baranov,E. M. Sherokalova,A. S. Volegov,A. V. Proshkin,N. V. Selezneva,E. P. Proskurina###
(729795, 729795)
 Themagnetization reversal in the metastable F state at low temperatures isaccompanied by substantial hysteresis ( 100 kOe) which is associated with theIsing character of Fe ions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[194.0, 1100, 'Celsius', 4],[116.0, 140, 'K', 3],[16.0, 100, 'K', 1],[22.0, 100, 'kOe', 0]

Fe
###Field-induced high coercive ferromagnetic state and magnetoresistance in the antiferromagnetically ordered compound Fe0.5TiS2|N. V. Baranov,E. M. Sherokalova,A. S. Volegov,A. V. Proshkin,N. V. Selezneva,E. P. Proskurina###
(729837, 729837)
 Themagnetization reversal in the metastable F state at low temperatures isaccompanied by substantial hysteresis ( 100 kOe) which is associated with theIsing character of Fe ions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[236.0, 1100, 'Celsius', 4],[158.0, 140, 'K', 3],[58.0, 100, 'K', 1],[20.0, 100, 'kOe', 0]

YBa2
###Long-range transfer of electron-phonon coupling in oxide superlattices|N. Driza,S. Blanco-Canosa,M. Bakr,S. Soltan,M. Khalid,L. Mustafa,K. Kawashima,G. Christiani,H. -U. Habermeier,G. Khaliullin,C. Ulrich,M. Le Tacon,B. Keimer###
(730082, 730084)
 Here we report a Ramanscattering study of the lattice dynamics in superlattices of thehigh-temperature superconductor bf YBa2 Cu3 O7 and thecolossal-magnetoresistance compound bf La2/3Ca1/3MnO3 that suggestsa new approach to this problem.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu3
###Long-range transfer of electron-phonon coupling in oxide superlattices|N. Driza,S. Blanco-Canosa,M. Bakr,S. Soltan,M. Khalid,L. Mustafa,K. Kawashima,G. Christiani,H. -U. Habermeier,G. Khaliullin,C. Ulrich,M. Le Tacon,B. Keimer###
(730086, 730087)
 Here we report a Ramanscattering study of the lattice dynamics in superlattices of thehigh-temperature superconductor bf YBa2 Cu3 O7 and thecolossal-magnetoresistance compound bf La2/3Ca1/3MnO3 that suggestsa new approach to this problem.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O7
###Long-range transfer of electron-phonon coupling in oxide superlattices|N. Driza,S. Blanco-Canosa,M. Bakr,S. Soltan,M. Khalid,L. Mustafa,K. Kawashima,G. Christiani,H. -U. Habermeier,G. Khaliullin,C. Ulrich,M. Le Tacon,B. Keimer###
(730089, 730090)
 Here we report a Ramanscattering study of the lattice dynamics in superlattices of thehigh-temperature superconductor bf YBa2 Cu3 O7 and thecolossal-magnetoresistance compound bf La2/3Ca1/3MnO3 that suggestsa new approach to this problem.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La2
###Long-range transfer of electron-phonon coupling in oxide superlattices|N. Driza,S. Blanco-Canosa,M. Bakr,S. Soltan,M. Khalid,L. Mustafa,K. Kawashima,G. Christiani,H. -U. Habermeier,G. Khaliullin,C. Ulrich,M. Le Tacon,B. Keimer###
(730105, 730106)
 Here we report a Ramanscattering study of the lattice dynamics in superlattices of thehigh-temperature superconductor bf YBa2 Cu3 O7 and thecolossal-magnetoresistance compound bf La2/3Ca1/3MnO3 that suggestsa new approach to this problem.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ca1
###Long-range transfer of electron-phonon coupling in oxide superlattices|N. Driza,S. Blanco-Canosa,M. Bakr,S. Soltan,M. Khalid,L. Mustafa,K. Kawashima,G. Christiani,H. -U. Habermeier,G. Khaliullin,C. Ulrich,M. Le Tacon,B. Keimer###
(730109, 730110)
 Here we report a Ramanscattering study of the lattice dynamics in superlattices of thehigh-temperature superconductor bf YBa2 Cu3 O7 and thecolossal-magnetoresistance compound bf La2/3Ca1/3MnO3 that suggestsa new approach to this problem.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnO3
###Long-range transfer of electron-phonon coupling in oxide superlattices|N. Driza,S. Blanco-Canosa,M. Bakr,S. Soltan,M. Khalid,L. Mustafa,K. Kawashima,G. Christiani,H. -U. Habermeier,G. Khaliullin,C. Ulrich,M. Le Tacon,B. Keimer###
(730113, 730115)
 Here we report a Ramanscattering study of the lattice dynamics in superlattices of thehigh-temperature superconductor bf YBa2 Cu3 O7 and thecolossal-magnetoresistance compound bf La2/3Ca1/3MnO3 that suggestsa new approach to this problem.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnO6
###Long-range transfer of electron-phonon coupling in oxide superlattices|N. Driza,S. Blanco-Canosa,M. Bakr,S. Soltan,M. Khalid,L. Mustafa,K. Kawashima,G. Christiani,H. -U. Habermeier,G. Khaliullin,C. Ulrich,M. Le Tacon,B. Keimer###
(730151, 730153)
 We find that a rotational mode of the MnO6octahedra in bf La2/3Ca1/3MnO3 experiences pronouncedsuperconductivity-induced lineshape anomalies, which scale linearly with thethickness of the bf YBa2 Cu3 O7 layers over a remarkably long range ofseveral tens of nanometers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La2
###Long-range transfer of electron-phonon coupling in oxide superlattices|N. Driza,S. Blanco-Canosa,M. Bakr,S. Soltan,M. Khalid,L. Mustafa,K. Kawashima,G. Christiani,H. -U. Habermeier,G. Khaliullin,C. Ulrich,M. Le Tacon,B. Keimer###
(730162, 730163)
 We find that a rotational mode of the MnO6octahedra in bf La2/3Ca1/3MnO3 experiences pronouncedsuperconductivity-induced lineshape anomalies, which scale linearly with thethickness of the bf YBa2 Cu3 O7 layers over a remarkably long range ofseveral tens of nanometers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ca1
###Long-range transfer of electron-phonon coupling in oxide superlattices|N. Driza,S. Blanco-Canosa,M. Bakr,S. Soltan,M. Khalid,L. Mustafa,K. Kawashima,G. Christiani,H. -U. Habermeier,G. Khaliullin,C. Ulrich,M. Le Tacon,B. Keimer###
(730166, 730167)
 We find that a rotational mode of the MnO6octahedra in bf La2/3Ca1/3MnO3 experiences pronouncedsuperconductivity-induced lineshape anomalies, which scale linearly with thethickness of the bf YBa2 Cu3 O7 layers over a remarkably long range ofseveral tens of nanometers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnO3
###Long-range transfer of electron-phonon coupling in oxide superlattices|N. Driza,S. Blanco-Canosa,M. Bakr,S. Soltan,M. Khalid,L. Mustafa,K. Kawashima,G. Christiani,H. -U. Habermeier,G. Khaliullin,C. Ulrich,M. Le Tacon,B. Keimer###
(730170, 730172)
 We find that a rotational mode of the MnO6octahedra in bf La2/3Ca1/3MnO3 experiences pronouncedsuperconductivity-induced lineshape anomalies, which scale linearly with thethickness of the bf YBa2 Cu3 O7 layers over a remarkably long range ofseveral tens of nanometers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YBa2
###Long-range transfer of electron-phonon coupling in oxide superlattices|N. Driza,S. Blanco-Canosa,M. Bakr,S. Soltan,M. Khalid,L. Mustafa,K. Kawashima,G. Christiani,H. -U. Habermeier,G. Khaliullin,C. Ulrich,M. Le Tacon,B. Keimer###
(730207, 730209)
 We find that a rotational mode of the MnO6octahedra in bf La2/3Ca1/3MnO3 experiences pronouncedsuperconductivity-induced lineshape anomalies, which scale linearly with thethickness of the bf YBa2 Cu3 O7 layers over a remarkably long range ofseveral tens of nanometers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu3
###Long-range transfer of electron-phonon coupling in oxide superlattices|N. Driza,S. Blanco-Canosa,M. Bakr,S. Soltan,M. Khalid,L. Mustafa,K. Kawashima,G. Christiani,H. -U. Habermeier,G. Khaliullin,C. Ulrich,M. Le Tacon,B. Keimer###
(730211, 730212)
 We find that a rotational mode of the MnO6octahedra in bf La2/3Ca1/3MnO3 experiences pronouncedsuperconductivity-induced lineshape anomalies, which scale linearly with thethickness of the bf YBa2 Cu3 O7 layers over a remarkably long range ofseveral tens of nanometers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O7
###Long-range transfer of electron-phonon coupling in oxide superlattices|N. Driza,S. Blanco-Canosa,M. Bakr,S. Soltan,M. Khalid,L. Mustafa,K. Kawashima,G. Christiani,H. -U. Habermeier,G. Khaliullin,C. Ulrich,M. Le Tacon,B. Keimer###
(730214, 730215)
 We find that a rotational mode of the MnO6octahedra in bf La2/3Ca1/3MnO3 experiences pronouncedsuperconductivity-induced lineshape anomalies, which scale linearly with thethickness of the bf YBa2 Cu3 O7 layers over a remarkably long range ofseveral tens of nanometers.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

IrSr2Sm1.15Ce0.85Cu2.175O10
###IrSr_2Sm_{1.15}Ce_{0.85}Cu_{2.175}O_{10}: A Novel Reentrant Spin-Glass Material|R. H. Colman,A. C. Mclaughlin###
(730351, 730361)
IrSr2Sm1.15Ce0.85Cu2.175O10 A Novel Reentrant Spin-Glass Material.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5822416302765647,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.12663755458515283,0,0,0,0,0,0,0,0,0.11644832605531295,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.049490538573508006,0,0,0,0.06695778748180495,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.05822416302765648,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[439.0, 8, 'K', 6]

IrSr2Sm1.15Ce0.85Cu2.175O10
###IrSr_2Sm_{1.15}Ce_{0.85}Cu_{2.175}O_{10}: A Novel Reentrant Spin-Glass Material|R. H. Colman,A. C. Mclaughlin###
(730392, 730402)
 A new iridium containing layered cuprate material,IrSr2Sm1.15Ce0.85Cu2.175O10, has been synthesized by conventionalambient-pressure solid-state techniques.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5822416302765647,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.12663755458515283,0,0,0,0,0,0,0,0,0.11644832605531295,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.049490538573508006,0,0,0,0.06695778748180495,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.05822416302765648,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[398.0, 8, 'K', 5]

IrO6
###IrSr_2Sm_{1.15}Ce_{0.85}Cu_{2.175}O_{10}: A Novel Reentrant Spin-Glass Material|R. H. Colman,A. C. Mclaughlin###
(730477, 730479)
 The materials<missing VAR> structure has beenfully characterized by Rietveld refinement of high resolution synchrotron X<missing VAR>-raydiffraction data; tilts and rotations of the IrO6 octahedra are observed as aresult of a bond mismatch between in-plane Ir-O and Cu-O bond lengths.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[321.0, 8, 'K', 4]

Ir
###IrSr_2Sm_{1.15}Ce_{0.85}Cu_{2.175}O_{10}: A Novel Reentrant Spin-Glass Material|R. H. Colman,A. C. Mclaughlin###
(730508, 730508)
 The materials<missing VAR> structure has beenfully characterized by Rietveld refinement of high resolution synchrotron X<missing VAR>-raydiffraction data; tilts and rotations of the IrO6 octahedra are observed as aresult of a bond mismatch between in-plane Ir-O and Cu-O bond lengths.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[292.0, 8, 'K', 4]

O
###IrSr_2Sm_{1.15}Ce_{0.85}Cu_{2.175}O_{10}: A Novel Reentrant Spin-Glass Material|R. H. Colman,A. C. Mclaughlin###
(730510, 730510)
 The materials<missing VAR> structure has beenfully characterized by Rietveld refinement of high resolution synchrotron X<missing VAR>-raydiffraction data; tilts and rotations of the IrO6 octahedra are observed as aresult of a bond mismatch between in-plane Ir-O and Cu-O bond lengths.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[290.0, 8, 'K', 4]

Cu
###IrSr_2Sm_{1.15}Ce_{0.85}Cu_{2.175}O_{10}: A Novel Reentrant Spin-Glass Material|R. H. Colman,A. C. Mclaughlin###
(730514, 730514)
 The materials<missing VAR> structure has beenfully characterized by Rietveld refinement of high resolution synchrotron X<missing VAR>-raydiffraction data; tilts and rotations of the IrO6 octahedra are observed as aresult of a bond mismatch between in-plane Ir-O and Cu-O bond lengths.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[286.0, 8, 'K', 4]

O
###IrSr_2Sm_{1.15}Ce_{0.85}Cu_{2.175}O_{10}: A Novel Reentrant Spin-Glass Material|R. H. Colman,A. C. Mclaughlin###
(730516, 730516)
 The materials<missing VAR> structure has beenfully characterized by Rietveld refinement of high resolution synchrotron X<missing VAR>-raydiffraction data; tilts and rotations of the IrO6 octahedra are observed as aresult of a bond mismatch between in-plane Ir-O and Cu-O bond lengths.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[284.0, 8, 'K', 4]

C
###IrSr_2Sm_{1.15}Ce_{0.85}Cu_{2.175}O_{10}: A Novel Reentrant Spin-Glass Material|R. H. Colman,A. C. Mclaughlin###
(730525, 730525)
D<missing VAR>C-susceptibility measurements evidence a complex set of magnetic transitionsupon cooling that are characteristic of a reentrant spin-glass ground-state.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[275.0, 8, 'K', 3]

K
###IrSr_2Sm_{1.15}Ce_{0.85}Cu_{2.175}O_{10}: A Novel Reentrant Spin-Glass Material|R. H. Colman,A. C. Mclaughlin###
(730590, 730590)
The glassy character of the lowest temperature, Tg10 K, transition is furtherconfirmed by AC-susceptibility measurements, showing a characteristic frequencydependence that can be well fitted by the Vogel-Fulcher law and yields a valueof Delta(Tf)/[Tf Delta log(omega)] 0.015(1), typical of dilutemagnetic systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[210.0, 8, 'K', 2]

C
###IrSr_2Sm_{1.15}Ce_{0.85}Cu_{2.175}O_{10}: A Novel Reentrant Spin-Glass Material|R. H. Colman,A. C. Mclaughlin###
(730605, 730605)
The glassy character of the lowest temperature, Tg10 K, transition is furtherconfirmed by AC-susceptibility measurements, showing a characteristic frequencydependence that can be well fitted by the Vogel-Fulcher law and yields a valueof Delta(Tf)/[Tf Delta log(omega)] 0.015(1), typical of dilutemagnetic systems.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[195.0, 8, 'K', 2]

K
###IrSr_2Sm_{1.15}Ce_{0.85}Cu_{2.175}O_{10}: A Novel Reentrant Spin-Glass Material|R. H. Colman,A. C. Mclaughlin###
(730754, 730754)
 Negative magnetoresistance is observed when the material is cooled below25 K, and the magnitude of this magnetoresistance is seen to increase uponcooling to a value of MR  -9 % at 8 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 8, 'K', 0]

In
###Quantum phase slip phenomenon in superconducting nanowires with low-Ohmic environment|Janne Lehtinen,Konstantin Arutyunov###
(730834, 730834)
 In a number of recent experiments it has been demonstrated that inultra-narrow superconducting channels quantum fluctuations of the orderparameter, alternatively called quantum phase slips, are responsible for thefinite resistance well below the critical temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Quantum phase slip phenomenon in superconducting nanowires with low-Ohmic environment|Janne Lehtinen,Konstantin Arutyunov###
(731034, 731034)
 In this paper we studythe limit of the strong quantum fluctuations where the existing models are notapplicable.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Quantum phase slip phenomenon in superconducting nanowires with low-Ohmic environment|Janne Lehtinen,Konstantin Arutyunov###
(731075, 731075)
 In particular case of ultra-thin titanium nanowires it isdemonstrated that below the expected critical temperature the resistance doesnot demonstrate any trend towards the conventional for a superconductorzero-resistivity state even at negligibly small measuring currents.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co2FeSi
###Half-Metallic Ferromagnetism in the Heusler Compound Co$_2$FeSi revealed by Resistivity, Magnetoresistance, and Anomalous Hall Effect measurements|Dirk Bombor,Christian G. F. Blum,Oleg Volkonskiy,Steven Rodan,Sabine Wurmehl,Christian Hess,Bernd Büchner###
(731243, 731246)
Half-Metallic Ferromagnetism in the Heusler Compound Co2FeSi revealed by Resistivity, Magnetoresistance, and Anomalous Hall Effect measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0.25,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 100, 'K', 3],[147.0, 9, 'meV', 3],[317.0, 100, 'K', 6]

Co2FeSi
###Half-Metallic Ferromagnetism in the Heusler Compound Co$_2$FeSi revealed by Resistivity, Magnetoresistance, and Anomalous Hall Effect measurements|Dirk Bombor,Christian G. F. Blum,Oleg Volkonskiy,Steven Rodan,Sabine Wurmehl,Christian Hess,Bernd Büchner###
(731285, 731288)
 We present electrical transport data for single-crystalline Co2FeSi whichprovide clear-cut evidence that this Heusler compound is truly a half-metallicferromagnet, i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0.25,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 100, 'K', 2],[105.0, 9, 'meV', 2],[275.0, 100, 'K', 5]

As
###Half-Metallic Ferromagnetism in the Heusler Compound Co$_2$FeSi revealed by Resistivity, Magnetoresistance, and Anomalous Hall Effect measurements|Dirk Bombor,Christian G. F. Blum,Oleg Volkonskiy,Steven Rodan,Sabine Wurmehl,Christian Hess,Bernd Büchner###
(731426, 731426)
 As a consequence, electron-magnonscattering is only relevant at T<missing VAR>gtrsimDelta but freezes out at lowertemperatures, i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 100, 'K', 1],[33.0, 9, 'meV', 1],[137.0, 100, 'K', 2]

H
###Half-Metallic Ferromagnetism in the Heusler Compound Co$_2$FeSi revealed by Resistivity, Magnetoresistance, and Anomalous Hall Effect measurements|Dirk Bombor,Christian G. F. Blum,Oleg Volkonskiy,Steven Rodan,Sabine Wurmehl,Christian Hess,Bernd Büchner###
(731542, 731542)
 The gapped magnon populationhas a decisive influence on the magnetoresistance and the anomalous Hall effect(AHE) i) The magnetoresistance changes its sign at T<missing VAR>sim 100 K, ii) theanomalous Hall coefficient is strongly temperature dependent at T<missing VAR>gtrsim 100K and compatible with Berry phase related and/or side-jump electronicdeflection, whereas it is practically temperature-independent at lowertemperatures.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 100, 'K', 3],[149.0, 9, 'meV', 3],[21.0, 100, 'K', 0]

K
###Half-Metallic Ferromagnetism in the Heusler Compound Co$_2$FeSi revealed by Resistivity, Magnetoresistance, and Anomalous Hall Effect measurements|Dirk Bombor,Christian G. F. Blum,Oleg Volkonskiy,Steven Rodan,Sabine Wurmehl,Christian Hess,Bernd Büchner###
(731594, 731594)
 The gapped magnon populationhas a decisive influence on the magnetoresistance and the anomalous Hall effect(AHE) i) The magnetoresistance changes its sign at T<missing VAR>sim 100 K, ii) theanomalous Hall coefficient is strongly temperature dependent at T<missing VAR>gtrsim 100K and compatible with Berry phase related and/or side-jump electronicdeflection, whereas it is practically temperature-independent at lowertemperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[206.0, 100, 'K', 3],[201.0, 9, 'meV', 3],[31.0, 100, 'K', 0]

Cr1
###Magnetic phase transitions in single crystals of the chiral helimagnet Cr1/3NbS2|N. J. Ghimire,M. A. McGuire,D. S. Parker,B. Sipos,S. Tang,J. -Q. Yan,B. C. Sales,D. Mandrus###
(731670, 731671)
Magnetic phase transitions in single crystals of the chiral helimagnet Cr1/3NbS2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[159.0, 120, 'K', 3],[210.0, 900, 'Oe', 4],[226.0, 1300, 'Oe', 4],[265.0, 120, 'K', 6],[328.0, 140, 'kOe', 7]

NbS2
###Magnetic phase transitions in single crystals of the chiral helimagnet Cr1/3NbS2|N. J. Ghimire,M. A. McGuire,D. S. Parker,B. Sipos,S. Tang,J. -Q. Yan,B. C. Sales,D. Mandrus###
(731674, 731676)
Magnetic phase transitions in single crystals of the chiral helimagnet Cr1/3NbS2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 120, 'K', 3],[205.0, 900, 'Oe', 4],[221.0, 1300, 'Oe', 4],[260.0, 120, 'K', 6],[323.0, 140, 'kOe', 7]

Cr1
###Magnetic phase transitions in single crystals of the chiral helimagnet Cr1/3NbS2|N. J. Ghimire,M. A. McGuire,D. S. Parker,B. Sipos,S. Tang,J. -Q. Yan,B. C. Sales,D. Mandrus###
(731685, 731686)
 The chiral helimagnet Cr1/3NbS2 has been investigated by magnetic, transportand thermal properties measurements on single crystals and by first principleselectronic structure calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 120, 'K', 2],[195.0, 900, 'Oe', 3],[211.0, 1300, 'Oe', 3],[250.0, 120, 'K', 5],[313.0, 140, 'kOe', 6]

NbS2
###Magnetic phase transitions in single crystals of the chiral helimagnet Cr1/3NbS2|N. J. Ghimire,M. A. McGuire,D. S. Parker,B. Sipos,S. Tang,J. -Q. Yan,B. C. Sales,D. Mandrus###
(731689, 731691)
 The chiral helimagnet Cr1/3NbS2 has been investigated by magnetic, transportand thermal properties measurements on single crystals and by first principleselectronic structure calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 120, 'K', 2],[190.0, 900, 'Oe', 3],[206.0, 1300, 'Oe', 3],[245.0, 120, 'K', 5],[308.0, 140, 'kOe', 6]

K
###Magnetic phase transitions in single crystals of the chiral helimagnet Cr1/3NbS2|N. J. Ghimire,M. A. McGuire,D. S. Parker,B. Sipos,S. Tang,J. -Q. Yan,B. C. Sales,D. Mandrus###
(731852, 731852)
 With increasing magnetic field and at temperatures below 120K, this material undergoes transitions from a helimagnetic to a soliton-latticephase near 900 Oe, and then to a ferromagnetic phase near 1300 Oe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 120, 'K', 1],[29.0, 900, 'Oe', 0],[45.0, 1300, 'Oe', 0],[84.0, 120, 'K', 2],[147.0, 140, 'kOe', 3]

At
###Magnetic phase transitions in single crystals of the chiral helimagnet Cr1/3NbS2|N. J. Ghimire,M. A. McGuire,D. S. Parker,B. Sipos,S. Tang,J. -Q. Yan,B. C. Sales,D. Mandrus###
(731980, 731980)
 At high fields a largemagnetoresistance (55 % at 140 kOe) is observed near the magnetic transitiontemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 120, 'K', 4],[99.0, 900, 'Oe', 3],[83.0, 1300, 'Oe', 3],[44.0, 120, 'K', 1],[19.0, 140, 'kOe', 0]

Cr1
###Magnetic phase transitions in single crystals of the chiral helimagnet Cr1/3NbS2|N. J. Ghimire,M. A. McGuire,D. S. Parker,B. Sipos,S. Tang,J. -Q. Yan,B. C. Sales,D. Mandrus###
(732090, 732091)
Effects of spin fluctuations are likely important in understanding the behaviorof Cr1/3NbS2 near and above the magnetic ordering transitions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[260.0, 120, 'K', 6],[209.0, 900, 'Oe', 5],[193.0, 1300, 'Oe', 5],[154.0, 120, 'K', 3],[91.0, 140, 'kOe', 2]

NbS2
###Magnetic phase transitions in single crystals of the chiral helimagnet Cr1/3NbS2|N. J. Ghimire,M. A. McGuire,D. S. Parker,B. Sipos,S. Tang,J. -Q. Yan,B. C. Sales,D. Mandrus###
(732094, 732096)
Effects of spin fluctuations are likely important in understanding the behaviorof Cr1/3NbS2 near and above the magnetic ordering transitions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[264.0, 120, 'K', 6],[213.0, 900, 'Oe', 5],[197.0, 1300, 'Oe', 5],[158.0, 120, 'K', 3],[95.0, 140, 'kOe', 2]

Co2
###Hard X-ray photoelectron spectroscopy on buried, off-stoichiometric CoxMnyGez (x : z = 2 : 0.38) Heusler thin films|Siham Ouardi,Gerhard H. Fecher,Stanislav Chadov,Claudia Felser,Benjamin Balke,Xenia Kozina,Tomoyuki Taira,Masafumi Yamamoto###
(732187, 732188)
 Fully epitaxial magnetic tunnel junctions (MTJs) with off-stoichiometricCo2-based Heusler alloy shows a intense dependency of the tunnelmagnetoresistance (TMR) on the Mn composition, demonstrating giant TMR ratiosof up to 1995% at 4.2 K for 1. This work reports on the electronic structure ofnon-stoichiometric CoxMnyGez thin films with a fixed Co/Ge ratio of x<missing VAR>  z<missing VAR>  2 0.38.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 1995, '%', 0],[61.0, 4.2, 'K', 0],[64.0, 1.0, 'This', 0]

Mn
###Hard X-ray photoelectron spectroscopy on buried, off-stoichiometric CoxMnyGez (x : z = 2 : 0.38) Heusler thin films|Siham Ouardi,Gerhard H. Fecher,Stanislav Chadov,Claudia Felser,Benjamin Balke,Xenia Kozina,Tomoyuki Taira,Masafumi Yamamoto###
(732223, 732223)
 Fully epitaxial magnetic tunnel junctions (MTJs) with off-stoichiometricCo2-based Heusler alloy shows a intense dependency of the tunnelmagnetoresistance (TMR) on the Mn composition, demonstrating giant TMR ratiosof up to 1995% at 4.2 K for 1. This work reports on the electronic structure ofnon-stoichiometric CoxMnyGez thin films with a fixed Co/Ge ratio of x<missing VAR>  z<missing VAR>  2 0.38.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 1995, '%', 0],[26.0, 4.2, 'K', 0],[29.0, 1.0, 'This', 0]

Co/Ge
###Hard X-ray photoelectron spectroscopy on buried, off-stoichiometric CoxMnyGez (x : z = 2 : 0.38) Heusler thin films|Siham Ouardi,Gerhard H. Fecher,Stanislav Chadov,Claudia Felser,Benjamin Balke,Xenia Kozina,Tomoyuki Taira,Masafumi Yamamoto###
(732287, 732289)
 Fully epitaxial magnetic tunnel junctions (MTJs) with off-stoichiometricCo2-based Heusler alloy shows a intense dependency of the tunnelmagnetoresistance (TMR) on the Mn composition, demonstrating giant TMR ratiosof up to 1995% at 4.2 K for 1. This work reports on the electronic structure ofnon-stoichiometric CoxMnyGez thin films with a fixed Co/Ge ratio of x<missing VAR>  z<missing VAR>  2 0.38.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[42.0, 1995, '%', 0],[38.0, 4.2, 'K', 0],[35.0, 1.0, 'This', 0]

Co2MnGe
###Hard X-ray photoelectron spectroscopy on buried, off-stoichiometric CoxMnyGez (x : z = 2 : 0.38) Heusler thin films|Siham Ouardi,Gerhard H. Fecher,Stanislav Chadov,Claudia Felser,Benjamin Balke,Xenia Kozina,Tomoyuki Taira,Masafumi Yamamoto###
(732410, 732413)
 Thehigh-resolution measurements of the valence band of the non-stoichiometricCoxMnyGez films close to the Fermi energy indicate a shift of the spectralweight compared to bulk Co2MnGe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.5,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 1995, '%', 2],[161.0, 4.2, 'K', 2],[158.0, 1.0, 'This', 2]

Co2MnGe
###Hard X-ray photoelectron spectroscopy on buried, off-stoichiometric CoxMnyGez (x : z = 2 : 0.38) Heusler thin films|Siham Ouardi,Gerhard H. Fecher,Stanislav Chadov,Claudia Felser,Benjamin Balke,Xenia Kozina,Tomoyuki Taira,Masafumi Yamamoto###
(732469, 732472)
 Furthermore it is shown thatthe co-sputtering of Co2MnGe together with additional Mn is an appropriatetechnique to adjust the stoichiometry of the CoxMnyGez film composition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.5,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[224.0, 1995, '%', 4],[220.0, 4.2, 'K', 4],[217.0, 1.0, 'This', 4]

Mn
###Hard X-ray photoelectron spectroscopy on buried, off-stoichiometric CoxMnyGez (x : z = 2 : 0.38) Heusler thin films|Siham Ouardi,Gerhard H. Fecher,Stanislav Chadov,Claudia Felser,Benjamin Balke,Xenia Kozina,Tomoyuki Taira,Masafumi Yamamoto###
(732480, 732480)
 Furthermore it is shown thatthe co-sputtering of Co2MnGe together with additional Mn is an appropriatetechnique to adjust the stoichiometry of the CoxMnyGez film composition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[235.0, 1995, '%', 4],[231.0, 4.2, 'K', 4],[228.0, 1.0, 'This', 4]

Pr0.6Sr0.4MnO3
###Magnetocaloric effect and Magnetothermopower in the room temperature ferromagnet Pr0.6Sr0.4MnO3|D. V. Maheshwar Repaka,T. S. Tripathi,M. Aparnadevi,R. Mahendiran###
(732606, 732612)
Magnetocaloric effect and Magnetothermopower in the room temperature ferromagnet Pr0.6Sr0.4MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.08,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.12,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 305, 'K', 1],[120.0, 86, 'K', 2],[127.0, 3, 'T', 2],[271.0, 350, 'K', 6],[274.0, 20, 'K', 6],[329.0, 25, '%', 7],[337.0, 3, 'T', 7],[355.0, 15, '%', 7],[447.0, 1, 'kOe', 9]

P
###Magnetocaloric effect and Magnetothermopower in the room temperature ferromagnet Pr0.6Sr0.4MnO3|D. V. Maheshwar Repaka,T. S. Tripathi,M. Aparnadevi,R. Mahendiran###
(732644, 732644)
 We have investigated magnetization(M), magnetocaloric effect(MCE) andmagnetothermopower(MTEP) in polycrystalline Pr0.6Sr0.4MnO3, which shows asecond-order paramagnetic to ferromagnetic transition near room temperature (T<missing VAR>C 305 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 305, 'K', 0],[88.0, 86, 'K', 1],[95.0, 3, 'T', 1],[239.0, 350, 'K', 5],[242.0, 20, 'K', 5],[297.0, 25, '%', 6],[305.0, 3, 'T', 6],[323.0, 15, '%', 6],[415.0, 1, 'kOe', 8]

Pr0.6Sr0.4MnO3
###Magnetocaloric effect and Magnetothermopower in the room temperature ferromagnet Pr0.6Sr0.4MnO3|D. V. Maheshwar Repaka,T. S. Tripathi,M. Aparnadevi,R. Mahendiran###
(732651, 732657)
 We have investigated magnetization(M), magnetocaloric effect(MCE) andmagnetothermopower(MTEP) in polycrystalline Pr0.6Sr0.4MnO3, which shows asecond-order paramagnetic to ferromagnetic transition near room temperature (T<missing VAR>C 305 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.08,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.12,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 305, 'K', 0],[75.0, 86, 'K', 1],[82.0, 3, 'T', 1],[226.0, 350, 'K', 5],[229.0, 20, 'K', 5],[284.0, 25, '%', 6],[292.0, 3, 'T', 6],[310.0, 15, '%', 6],[402.0, 1, 'kOe', 8]

C
###Magnetocaloric effect and Magnetothermopower in the room temperature ferromagnet Pr0.6Sr0.4MnO3|D. V. Maheshwar Repaka,T. S. Tripathi,M. Aparnadevi,R. Mahendiran###
(732687, 732687)
 We have investigated magnetization(M), magnetocaloric effect(MCE) andmagnetothermopower(MTEP) in polycrystalline Pr0.6Sr0.4MnO3, which shows asecond-order paramagnetic to ferromagnetic transition near room temperature (T<missing VAR>C 305 K).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 305, 'K', 0],[45.0, 86, 'K', 1],[52.0, 3, 'T', 1],[196.0, 350, 'K', 5],[199.0, 20, 'K', 5],[254.0, 25, '%', 6],[262.0, 3, 'T', 6],[280.0, 15, '%', 6],[372.0, 1, 'kOe', 8]

S
###Magnetocaloric effect and Magnetothermopower in the room temperature ferromagnet Pr0.6Sr0.4MnO3|D. V. Maheshwar Repaka,T. S. Tripathi,M. Aparnadevi,R. Mahendiran###
(732730, 732730)
 However, field-cooled M(T) within the long range ferromagnetic stateshows an abrupt decrease at T<missing VAR>S  86 K for H < 3 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 305, 'K', 1],[2.0, 86, 'K', 0],[9.0, 3, 'T', 0],[153.0, 350, 'K', 4],[156.0, 20, 'K', 4],[211.0, 25, '%', 5],[219.0, 3, 'T', 5],[237.0, 15, '%', 5],[329.0, 1, 'kOe', 7]

H
###Magnetocaloric effect and Magnetothermopower in the room temperature ferromagnet Pr0.6Sr0.4MnO3|D. V. Maheshwar Repaka,T. S. Tripathi,M. Aparnadevi,R. Mahendiran###
(732736, 732736)
 However, field-cooled M(T) within the long range ferromagnetic stateshows an abrupt decrease at T<missing VAR>S  86 K for H < 3 T.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 305, 'K', 1],[4.0, 86, 'K', 0],[3.0, 3, 'T', 0],[147.0, 350, 'K', 4],[150.0, 20, 'K', 4],[205.0, 25, '%', 5],[213.0, 3, 'T', 5],[231.0, 15, '%', 5],[323.0, 1, 'kOe', 7]

S
###Magnetocaloric effect and Magnetothermopower in the room temperature ferromagnet Pr0.6Sr0.4MnO3|D. V. Maheshwar Repaka,T. S. Tripathi,M. Aparnadevi,R. Mahendiran###
(732814, 732814)
 The anomaly at T<missing VAR>S is attributed to a structural transition fromorthorhombic to monoclinic phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 305, 'K', 3],[82.0, 86, 'K', 2],[75.0, 3, 'T', 2],[69.0, 350, 'K', 2],[72.0, 20, 'K', 2],[127.0, 25, '%', 3],[135.0, 3, 'T', 3],[153.0, 15, '%', 3],[245.0, 1, 'kOe', 5]

C
###Magnetocaloric effect and Magnetothermopower in the room temperature ferromagnet Pr0.6Sr0.4MnO3|D. V. Maheshwar Repaka,T. S. Tripathi,M. Aparnadevi,R. Mahendiran###
(732855, 732855)
 The magnetic entropy change is negative at T<missing VAR>Cbut changes to positive at T<missing VAR>S.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 305, 'K', 4],[123.0, 86, 'K', 3],[116.0, 3, 'T', 3],[28.0, 350, 'K', 1],[31.0, 20, 'K', 1],[86.0, 25, '%', 2],[94.0, 3, 'T', 2],[112.0, 15, '%', 2],[204.0, 1, 'kOe', 4]

S
###Magnetocaloric effect and Magnetothermopower in the room temperature ferromagnet Pr0.6Sr0.4MnO3|D. V. Maheshwar Repaka,T. S. Tripathi,M. Aparnadevi,R. Mahendiran###
(732869, 732869)
 The magnetic entropy change is negative at T<missing VAR>Cbut changes to positive at T<missing VAR>S.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 305, 'K', 4],[137.0, 86, 'K', 3],[130.0, 3, 'T', 3],[14.0, 350, 'K', 1],[17.0, 20, 'K', 1],[72.0, 25, '%', 2],[80.0, 3, 'T', 2],[98.0, 15, '%', 2],[190.0, 1, 'kOe', 4]

C
###Magnetocaloric effect and Magnetothermopower in the room temperature ferromagnet Pr0.6Sr0.4MnO3|D. V. Maheshwar Repaka,T. S. Tripathi,M. Aparnadevi,R. Mahendiran###
(732901, 732901)
 Thermopower (Q) is negative from 350 K to 20 K,shows a rapid decrease at T<missing VAR>C and a small cusp around T<missing VAR>S in zero field.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[211.0, 305, 'K', 5],[169.0, 86, 'K', 4],[162.0, 3, 'T', 4],[18.0, 350, 'K', 0],[15.0, 20, 'K', 0],[40.0, 25, '%', 1],[48.0, 3, 'T', 1],[66.0, 15, '%', 1],[158.0, 1, 'kOe', 3]

S
###Magnetocaloric effect and Magnetothermopower in the room temperature ferromagnet Pr0.6Sr0.4MnO3|D. V. Maheshwar Repaka,T. S. Tripathi,M. Aparnadevi,R. Mahendiran###
(732914, 732914)
 Thermopower (Q) is negative from 350 K to 20 K,shows a rapid decrease at T<missing VAR>C and a small cusp around T<missing VAR>S in zero field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[224.0, 305, 'K', 5],[182.0, 86, 'K', 4],[175.0, 3, 'T', 4],[31.0, 350, 'K', 0],[28.0, 20, 'K', 0],[27.0, 25, '%', 1],[35.0, 3, 'T', 1],[53.0, 15, '%', 1],[145.0, 1, 'kOe', 3]

P
###Magnetocaloric effect and Magnetothermopower in the room temperature ferromagnet Pr0.6Sr0.4MnO3|D. V. Maheshwar Repaka,T. S. Tripathi,M. Aparnadevi,R. Mahendiran###
(732928, 732928)
 The MTEPreaches a maximum value of 25% for deltaH  3 T around T<missing VAR>C which is much higherthan 15% dc magnetoresistance for the same field change.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[238.0, 305, 'K', 6],[196.0, 86, 'K', 5],[189.0, 3, 'T', 5],[45.0, 350, 'K', 1],[42.0, 20, 'K', 1],[13.0, 25, '%', 0],[21.0, 3, 'T', 0],[39.0, 15, '%', 0],[131.0, 1, 'kOe', 2]

H
###Magnetocaloric effect and Magnetothermopower in the room temperature ferromagnet Pr0.6Sr0.4MnO3|D. V. Maheshwar Repaka,T. S. Tripathi,M. Aparnadevi,R. Mahendiran###
(732947, 732947)
 The MTEPreaches a maximum value of 25% for deltaH  3 T around T<missing VAR>C which is much higherthan 15% dc magnetoresistance for the same field change.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[257.0, 305, 'K', 6],[215.0, 86, 'K', 5],[208.0, 3, 'T', 5],[64.0, 350, 'K', 1],[61.0, 20, 'K', 1],[6.0, 25, '%', 0],[2.0, 3, 'T', 0],[20.0, 15, '%', 0],[112.0, 1, 'kOe', 2]

C
###Magnetocaloric effect and Magnetothermopower in the room temperature ferromagnet Pr0.6Sr0.4MnO3|D. V. Maheshwar Repaka,T. S. Tripathi,M. Aparnadevi,R. Mahendiran###
(732954, 732954)
 The MTEPreaches a maximum value of 25% for deltaH  3 T around T<missing VAR>C which is much higherthan 15% dc magnetoresistance for the same field change.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[264.0, 305, 'K', 6],[222.0, 86, 'K', 5],[215.0, 3, 'T', 5],[71.0, 350, 'K', 1],[68.0, 20, 'K', 1],[13.0, 25, '%', 0],[5.0, 3, 'T', 0],[13.0, 15, '%', 0],[105.0, 1, 'kOe', 2]

P
###Magnetocaloric effect and Magnetothermopower in the room temperature ferromagnet Pr0.6Sr0.4MnO3|D. V. Maheshwar Repaka,T. S. Tripathi,M. Aparnadevi,R. Mahendiran###
(732997, 732997)
 A linear relationbetween MTEP and magnetoresistance, and between delta Sm and Delta Q<missing VAR> are foundnear T<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[307.0, 305, 'K', 7],[265.0, 86, 'K', 6],[258.0, 3, 'T', 6],[114.0, 350, 'K', 2],[111.0, 20, 'K', 2],[56.0, 25, '%', 1],[48.0, 3, 'T', 1],[30.0, 15, '%', 1],[62.0, 1, 'kOe', 1]

Sm
###Magnetocaloric effect and Magnetothermopower in the room temperature ferromagnet Pr0.6Sr0.4MnO3|D. V. Maheshwar Repaka,T. S. Tripathi,M. Aparnadevi,R. Mahendiran###
(733010, 733010)
 A linear relationbetween MTEP and magnetoresistance, and between delta Sm and Delta Q<missing VAR> are foundnear T<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[320.0, 305, 'K', 7],[278.0, 86, 'K', 6],[271.0, 3, 'T', 6],[127.0, 350, 'K', 2],[124.0, 20, 'K', 2],[69.0, 25, '%', 1],[61.0, 3, 'T', 1],[43.0, 15, '%', 1],[49.0, 1, 'kOe', 1]

C
###Magnetocaloric effect and Magnetothermopower in the room temperature ferromagnet Pr0.6Sr0.4MnO3|D. V. Maheshwar Repaka,T. S. Tripathi,M. Aparnadevi,R. Mahendiran###
(733026, 733026)
 A linear relationbetween MTEP and magnetoresistance, and between delta Sm and Delta Q<missing VAR> are foundnear T<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[336.0, 305, 'K', 7],[294.0, 86, 'K', 6],[287.0, 3, 'T', 6],[143.0, 350, 'K', 2],[140.0, 20, 'K', 2],[85.0, 25, '%', 1],[77.0, 3, 'T', 1],[59.0, 15, '%', 1],[33.0, 1, 'kOe', 1]

H
###Magnetocaloric effect and Magnetothermopower in the room temperature ferromagnet Pr0.6Sr0.4MnO3|D. V. Maheshwar Repaka,T. S. Tripathi,M. Aparnadevi,R. Mahendiran###
(733047, 733047)
 Further, ac magnetotransport in low dc magnetic fields (H less than orequal to 1 kOe), critical analysis of the paramagnetic to ferromagnetictransition and scaling behavior of the magnetic entropy change versus a reducedtemperature under different magnetic fields are also reported.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[357.0, 305, 'K', 8],[315.0, 86, 'K', 7],[308.0, 3, 'T', 7],[164.0, 350, 'K', 3],[161.0, 20, 'K', 3],[106.0, 25, '%', 2],[98.0, 3, 'T', 2],[80.0, 15, '%', 2],[12.0, 1, 'kOe', 0]

B
###Height correlation of rippled graphene and Lundeberg-Folk formula for magnetoresistance|Kazuyuki Genma,Makoto Katori###
(733256, 733256)
 Massless Diracfermions carrying charges on graphene are scattered by the vector potentialsand magnetoresistance is induced proportional to the square of amplitude ofin-plane magnetic field Bparallel2.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Height correlation of rippled graphene and Lundeberg-Folk formula for magnetoresistance|Kazuyuki Genma,Makoto Katori###
(733305, 733305)
 Recently, Lundeberg and Folkproposed a formula showing dependence of the magnetoresistance on carrierdensity, in which the coefficient of Bparallel2 is given by a functionalof the height-correlation function c(r) of ripples.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Height correlation of rippled graphene and Lundeberg-Folk formula for magnetoresistance|Kazuyuki Genma,Makoto Katori###
(733340, 733340)
 In the present paper, wegive exact and explicit expressions of the coefficient for the two cases suchthat c(r) is (i) exponential and (ii) Gaussian.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HgTe
###Effects of Spin Polarization in the HgTe Quantum Well|M. V. Yakunin,A. V. Suslov,S. M. Podgornykh,S. A. Dvoretsky,N. N. Mikhailov###
(733574, 733575)
Effects of Spin Polarization in the HgTe Quantum Well.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HgTe
###Effects of Spin Polarization in the HgTe Quantum Well|M. V. Yakunin,A. V. Suslov,S. M. Podgornykh,S. A. Dvoretsky,N. N. Mikhailov###
(733620, 733621)
 Magnetoresistivity features connected with the spin level coincidences undertilted fields in a Gamma8 conduction band of the HgTe quantum well werefound to align along straight trajectories in a (Bbot,B) plane betweenthe field components perpendicular and parallel to the layer meaning a linearspin polarization dependence on magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Effects of Spin Polarization in the HgTe Quantum Well|M. V. Yakunin,A. V. Suslov,S. M. Podgornykh,S. A. Dvoretsky,N. N. Mikhailov###
(733647, 733647)
 Magnetoresistivity features connected with the spin level coincidences undertilted fields in a Gamma8 conduction band of the HgTe quantum well werefound to align along straight trajectories in a (Bbot,B) plane betweenthe field components perpendicular and parallel to the layer meaning a linearspin polarization dependence on magnetic field.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Effects of Spin Polarization in the HgTe Quantum Well|M. V. Yakunin,A. V. Suslov,S. M. Podgornykh,S. A. Dvoretsky,N. N. Mikhailov###
(733650, 733650)
 Magnetoresistivity features connected with the spin level coincidences undertilted fields in a Gamma8 conduction band of the HgTe quantum well werefound to align along straight trajectories in a (Bbot,B) plane betweenthe field components perpendicular and parallel to the layer meaning a linearspin polarization dependence on magnetic field.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Effects of Spin Polarization in the HgTe Quantum Well|M. V. Yakunin,A. V. Suslov,S. M. Podgornykh,S. A. Dvoretsky,N. N. Mikhailov###
(733729, 733729)
 Among the trajectories is anoticeable set of lines descending from a single point on the B axis,which is shown to yield a field of the full spin polarization of the electronicsystem, in agreement with the data on the electron redistribution between spinsubbands obtained from Fourier transforms of oscillations along circletrajectories in the (Bbot,B) plane and with the point on themagnetoresistivity under pure B separating a complicated weak fielddependence from the monotonous one.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Effects of Spin Polarization in the HgTe Quantum Well|M. V. Yakunin,A. V. Suslov,S. M. Podgornykh,S. A. Dvoretsky,N. N. Mikhailov###
(733818, 733818)
 Among the trajectories is anoticeable set of lines descending from a single point on the B axis,which is shown to yield a field of the full spin polarization of the electronicsystem, in agreement with the data on the electron redistribution between spinsubbands obtained from Fourier transforms of oscillations along circletrajectories in the (Bbot,B) plane and with the point on themagnetoresistivity under pure B separating a complicated weak fielddependence from the monotonous one.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Effects of Spin Polarization in the HgTe Quantum Well|M. V. Yakunin,A. V. Suslov,S. M. Podgornykh,S. A. Dvoretsky,N. N. Mikhailov###
(733821, 733821)
 Among the trajectories is anoticeable set of lines descending from a single point on the B axis,which is shown to yield a field of the full spin polarization of the electronicsystem, in agreement with the data on the electron redistribution between spinsubbands obtained from Fourier transforms of oscillations along circletrajectories in the (Bbot,B) plane and with the point on themagnetoresistivity under pure B separating a complicated weak fielddependence from the monotonous one.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Effects of Spin Polarization in the HgTe Quantum Well|M. V. Yakunin,A. V. Suslov,S. M. Podgornykh,S. A. Dvoretsky,N. N. Mikhailov###
(733845, 733845)
 Among the trajectories is anoticeable set of lines descending from a single point on the B axis,which is shown to yield a field of the full spin polarization of the electronicsystem, in agreement with the data on the electron redistribution between spinsubbands obtained from Fourier transforms of oscillations along circletrajectories in the (Bbot,B) plane and with the point on themagnetoresistivity under pure B separating a complicated weak fielddependence from the monotonous one.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Effects of Spin Polarization in the HgTe Quantum Well|M. V. Yakunin,A. V. Suslov,S. M. Podgornykh,S. A. Dvoretsky,N. N. Mikhailov###
(733975, 733975)
 Inthe quantum Hall range of Bbot, the spin polarization manifests inanticrossings of magnetic levels, which were found to depend dramaticallynonmonotonously on Bbot.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Effects of Spin Polarization in the HgTe Quantum Well|M. V. Yakunin,A. V. Suslov,S. M. Podgornykh,S. A. Dvoretsky,N. N. Mikhailov###
(733988, 733988)
 Inthe quantum Hall range of Bbot, the spin polarization manifests inanticrossings of magnetic levels, which were found to depend dramaticallynonmonotonously on Bbot.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Effects of Spin Polarization in the HgTe Quantum Well|M. V. Yakunin,A. V. Suslov,S. M. Podgornykh,S. A. Dvoretsky,N. N. Mikhailov###
(734029, 734029)
 Inthe quantum Hall range of Bbot, the spin polarization manifests inanticrossings of magnetic levels, which were found to depend dramaticallynonmonotonously on Bbot.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Electrical and magnetic transport study on strain driven ferromagnetic insulating thin film of low doped manganite|Rajib Nath,Sudeshna Samanta,A. K. Raychaudhuri###
(734074, 734074)
 In this paper we have created a strain driven single crystal likeferromagnetic insulating (FM<missing VAR>I) state in a PLD grown thin film of low dopedLCMO(X<missing VAR>  0.15)on NG<missing VAR>O(100) substrate and make a thorough study of strain effectson the electric and magnetic transport of this film.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[192.0, 0.22, 'doping', 1],[296.0, 20, 'to', 3],[298.0, 75, '%', 3],[319.0, 10, 'T', 3],[331.0, 5, 'to', 3],[333.0, 40, '%', 3],[394.0, 20, '%', 4]

F
###Electrical and magnetic transport study on strain driven ferromagnetic insulating thin film of low doped manganite|Rajib Nath,Sudeshna Samanta,A. K. Raychaudhuri###
(734104, 734104)
 In this paper we have created a strain driven single crystal likeferromagnetic insulating (FM<missing VAR>I) state in a PLD grown thin film of low dopedLCMO(X<missing VAR>  0.15)on NG<missing VAR>O(100) substrate and make a thorough study of strain effectson the electric and magnetic transport of this film.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 0.22, 'doping', 1],[266.0, 20, 'to', 3],[268.0, 75, '%', 3],[289.0, 10, 'T', 3],[301.0, 5, 'to', 3],[303.0, 40, '%', 3],[364.0, 20, '%', 4]

I
###Electrical and magnetic transport study on strain driven ferromagnetic insulating thin film of low doped manganite|Rajib Nath,Sudeshna Samanta,A. K. Raychaudhuri###
(734106, 734106)
 In this paper we have created a strain driven single crystal likeferromagnetic insulating (FM<missing VAR>I) state in a PLD grown thin film of low dopedLCMO(X<missing VAR>  0.15)on NG<missing VAR>O(100) substrate and make a thorough study of strain effectson the electric and magnetic transport of this film.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 0.22, 'doping', 1],[264.0, 20, 'to', 3],[266.0, 75, '%', 3],[287.0, 10, 'T', 3],[299.0, 5, 'to', 3],[301.0, 40, '%', 3],[362.0, 20, '%', 4]

P
###Electrical and magnetic transport study on strain driven ferromagnetic insulating thin film of low doped manganite|Rajib Nath,Sudeshna Samanta,A. K. Raychaudhuri###
(734115, 734115)
 In this paper we have created a strain driven single crystal likeferromagnetic insulating (FM<missing VAR>I) state in a PLD grown thin film of low dopedLCMO(X<missing VAR>  0.15)on NG<missing VAR>O(100) substrate and make a thorough study of strain effectson the electric and magnetic transport of this film.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 0.22, 'doping', 1],[255.0, 20, 'to', 3],[257.0, 75, '%', 3],[278.0, 10, 'T', 3],[290.0, 5, 'to', 3],[292.0, 40, '%', 3],[353.0, 20, '%', 4]

O
###Electrical and magnetic transport study on strain driven ferromagnetic insulating thin film of low doped manganite|Rajib Nath,Sudeshna Samanta,A. K. Raychaudhuri###
(734135, 734135)
 In this paper we have created a strain driven single crystal likeferromagnetic insulating (FM<missing VAR>I) state in a PLD grown thin film of low dopedLCMO(X<missing VAR>  0.15)on NG<missing VAR>O(100) substrate and make a thorough study of strain effectson the electric and magnetic transport of this film.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 0.22, 'doping', 1],[235.0, 20, 'to', 3],[237.0, 75, '%', 3],[258.0, 10, 'T', 3],[270.0, 5, 'to', 3],[272.0, 40, '%', 3],[333.0, 20, '%', 4]

N
###Electrical and magnetic transport study on strain driven ferromagnetic insulating thin film of low doped manganite|Rajib Nath,Sudeshna Samanta,A. K. Raychaudhuri###
(734144, 734144)
 In this paper we have created a strain driven single crystal likeferromagnetic insulating (FM<missing VAR>I) state in a PLD grown thin film of low dopedLCMO(X<missing VAR>  0.15)on NG<missing VAR>O(100) substrate and make a thorough study of strain effectson the electric and magnetic transport of this film.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 0.22, 'doping', 1],[226.0, 20, 'to', 3],[228.0, 75, '%', 3],[249.0, 10, 'T', 3],[261.0, 5, 'to', 3],[263.0, 40, '%', 3],[324.0, 20, '%', 4]

F
###Electrical and magnetic transport study on strain driven ferromagnetic insulating thin film of low doped manganite|Rajib Nath,Sudeshna Samanta,A. K. Raychaudhuri###
(734202, 734202)
 We have studied andcompared the FM<missing VAR>I state, ferromagnetic transition temperature (T<missing VAR>C),ferromagnetic insulating temperature (TFMI) and the resistivity of the film indetails with bulk single crystals of X<missing VAR>0.18 to 0.22 doping region.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 0.22, 'doping', 0],[168.0, 20, 'to', 2],[170.0, 75, '%', 2],[191.0, 10, 'T', 2],[203.0, 5, 'to', 2],[205.0, 40, '%', 2],[266.0, 20, '%', 3]

I
###Electrical and magnetic transport study on strain driven ferromagnetic insulating thin film of low doped manganite|Rajib Nath,Sudeshna Samanta,A. K. Raychaudhuri###
(734204, 734204)
 We have studied andcompared the FM<missing VAR>I state, ferromagnetic transition temperature (T<missing VAR>C),ferromagnetic insulating temperature (TFMI) and the resistivity of the film indetails with bulk single crystals of X<missing VAR>0.18 to 0.22 doping region.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 0.22, 'doping', 0],[166.0, 20, 'to', 2],[168.0, 75, '%', 2],[189.0, 10, 'T', 2],[201.0, 5, 'to', 2],[203.0, 40, '%', 2],[264.0, 20, '%', 3]

C
###Electrical and magnetic transport study on strain driven ferromagnetic insulating thin film of low doped manganite|Rajib Nath,Sudeshna Samanta,A. K. Raychaudhuri###
(734217, 734217)
 We have studied andcompared the FM<missing VAR>I state, ferromagnetic transition temperature (T<missing VAR>C),ferromagnetic insulating temperature (TFMI) and the resistivity of the film indetails with bulk single crystals of X<missing VAR>0.18 to 0.22 doping region.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 0.22, 'doping', 0],[153.0, 20, 'to', 2],[155.0, 75, '%', 2],[176.0, 10, 'T', 2],[188.0, 5, 'to', 2],[190.0, 40, '%', 2],[251.0, 20, '%', 3]

I
###Electrical and magnetic transport study on strain driven ferromagnetic insulating thin film of low doped manganite|Rajib Nath,Sudeshna Samanta,A. K. Raychaudhuri###
(734232, 734232)
 We have studied andcompared the FM<missing VAR>I state, ferromagnetic transition temperature (T<missing VAR>C),ferromagnetic insulating temperature (TFMI) and the resistivity of the film indetails with bulk single crystals of X<missing VAR>0.18 to 0.22 doping region.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 0.22, 'doping', 0],[138.0, 20, 'to', 2],[140.0, 75, '%', 2],[161.0, 10, 'T', 2],[173.0, 5, 'to', 2],[175.0, 40, '%', 2],[236.0, 20, '%', 3]

I
###Electrical and magnetic transport study on strain driven ferromagnetic insulating thin film of low doped manganite|Rajib Nath,Sudeshna Samanta,A. K. Raychaudhuri###
(734283, 734283)
 We havefound that TFMI and the localisation length of the carriers are increased andthere is also a decrease in the Coulomb gap.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 0.22, 'doping', 1],[87.0, 20, 'to', 1],[89.0, 75, '%', 1],[110.0, 10, 'T', 1],[122.0, 5, 'to', 1],[124.0, 40, '%', 1],[185.0, 20, '%', 2]

C
###Electrical and magnetic transport study on strain driven ferromagnetic insulating thin film of low doped manganite|Rajib Nath,Sudeshna Samanta,A. K. Raychaudhuri###
(734423, 734423)
 The magneto transport behavior ofthe film also differs from the bulk single crystals and the magnetoresistanceof the sample is nearly 20 to 75% with the application of the applied field(0to 10 T) and it falls up to 5 to 40% below a certain temperature and the T<missing VAR>C ofthe film increases to higher temperature with the increasing field.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 0.22, 'doping', 2],[53.0, 20, 'to', 0],[51.0, 75, '%', 0],[30.0, 10, 'T', 0],[18.0, 5, 'to', 0],[16.0, 40, '%', 0],[45.0, 20, '%', 1]

B
###Aharonov-Bohm rings with strong spin-orbit interaction: the role of sample-specific properties|Fabrizio Nichele,Yashar Komijani,Szymon Hennel,Thomas Ihn,Klaus Ensslin,Christian Gerl,Werner Wegscheider,Dirk Reuter,Andreas D. Wieck###
(734542, 734542)
 We present low-temperature transport experiments on Aharonov-Bohm (AB) ringsfabricated from two-dimensional hole gases in p<missing VAR>-type GaAs/AlGaAsheterostructures.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 15, '%', 1]

GaAs/AlGaAs
###Aharonov-Bohm rings with strong spin-orbit interaction: the role of sample-specific properties|Fabrizio Nichele,Yashar Komijani,Szymon Hennel,Thomas Ihn,Klaus Ensslin,Christian Gerl,Werner Wegscheider,Dirk Reuter,Andreas D. Wieck###
(734566, 734571)
 We present low-temperature transport experiments on Aharonov-Bohm (AB) ringsfabricated from two-dimensional hole gases in p<missing VAR>-type GaAs/AlGaAsheterostructures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[19.0, 15, '%', 1]

In
###Aharonov-Bohm rings with strong spin-orbit interaction: the role of sample-specific properties|Fabrizio Nichele,Yashar Komijani,Szymon Hennel,Thomas Ihn,Klaus Ensslin,Christian Gerl,Werner Wegscheider,Dirk Reuter,Andreas D. Wieck###
(734813, 734813)
 In previous work they have occasionally been interpreted as signaturesof spin-orbit interaction (SOI)-induced effects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[223.0, 15, '%', 5]

(SOI)
###Aharonov-Bohm rings with strong spin-orbit interaction: the role of sample-specific properties|Fabrizio Nichele,Yashar Komijani,Szymon Hennel,Thomas Ihn,Klaus Ensslin,Christian Gerl,Werner Wegscheider,Dirk Reuter,Andreas D. Wieck###
(734842, 734846)
 In previous work they have occasionally been interpreted as signaturesof spin-orbit interaction (SOI)-induced effects.
Featurization successful!
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[252.0, 15, '%', 5]

In
###Aharonov-Bohm rings with strong spin-orbit interaction: the role of sample-specific properties|Fabrizio Nichele,Yashar Komijani,Szymon Hennel,Thomas Ihn,Klaus Ensslin,Christian Gerl,Werner Wegscheider,Dirk Reuter,Andreas D. Wieck###
(734853, 734853)
 In the light of these results,the unambiguous identification of SOI-induced phase effects in AB rings remainsstill an open and challenging experimental task.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[263.0, 15, '%', 6]

SOI
###Aharonov-Bohm rings with strong spin-orbit interaction: the role of sample-specific properties|Fabrizio Nichele,Yashar Komijani,Szymon Hennel,Thomas Ihn,Klaus Ensslin,Christian Gerl,Werner Wegscheider,Dirk Reuter,Andreas D. Wieck###
(734875, 734877)
 In the light of these results,the unambiguous identification of SOI-induced phase effects in AB rings remainsstill an open and challenging experimental task.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[285.0, 15, '%', 6]

B
###Aharonov-Bohm rings with strong spin-orbit interaction: the role of sample-specific properties|Fabrizio Nichele,Yashar Komijani,Szymon Hennel,Thomas Ihn,Klaus Ensslin,Christian Gerl,Werner Wegscheider,Dirk Reuter,Andreas D. Wieck###
(734888, 734888)
 In the light of these results,the unambiguous identification of SOI-induced phase effects in AB rings remainsstill an open and challenging experimental task.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[298.0, 15, '%', 6]

FeGe
###Scattering mechanisms in textured FeGe thin films: magnetoresistance and the anomalous Hall effect|N. A. Porter,J. C. Gartside,C. H. Marrows###
(734926, 734927)
Scattering mechanisms in textured FeGe thin films magnetoresistance and the anomalous Hall effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 2, 'K', 1],[67.0, 5, 'K', 2],[169.0, 80, 'K', 4],[192.0, 200, 'K', 4],[340.0, 200, 'K', 6]

FeGe
###Scattering mechanisms in textured FeGe thin films: magnetoresistance and the anomalous Hall effect|N. A. Porter,J. C. Gartside,C. H. Marrows###
(734956, 734957)
 A textured thin film of FeGe was grown by magnetron sputtering with ahelimagnetic ordering temperature of T<missing VAR>N  276 /- 2 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 2, 'K', 0],[37.0, 5, 'K', 1],[139.0, 80, 'K', 3],[162.0, 200, 'K', 3],[310.0, 200, 'K', 5]

N
###Scattering mechanisms in textured FeGe thin films: magnetoresistance and the anomalous Hall effect|N. A. Porter,J. C. Gartside,C. H. Marrows###
(734983, 734983)
 A textured thin film of FeGe was grown by magnetron sputtering with ahelimagnetic ordering temperature of T<missing VAR>N  276 /- 2 K.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 2, 'K', 0],[11.0, 5, 'K', 1],[113.0, 80, 'K', 3],[136.0, 200, 'K', 3],[284.0, 200, 'K', 5]

At
###Scattering mechanisms in textured FeGe thin films: magnetoresistance and the anomalous Hall effect|N. A. Porter,J. C. Gartside,C. H. Marrows###
(735140, 735140)
 At low fields, where the magnetisation is no longertechnically saturated, we find a scaling of magnetoresistance with the squareof the magnetisation, indicating that the MR due to the unwinding of spins inthe conical phase arises from a similar mechanism to that in magnetic domainwalls.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 2, 'K', 4],[146.0, 5, 'K', 3],[44.0, 80, 'K', 1],[21.0, 200, 'K', 1],[127.0, 200, 'K', 1]

No
###Scattering mechanisms in textured FeGe thin films: magnetoresistance and the anomalous Hall effect|N. A. Porter,J. C. Gartside,C. H. Marrows###
(735270, 735270)
 No featurescan be found in the temperature or field dependence of the longitudinalresistivity that belie the presence of the underlying magnetic phase transitionat T<missing VAR>N the marked changes in behavior are at much lower temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0
[280.0, 2, 'K', 6],[276.0, 5, 'K', 5],[174.0, 80, 'K', 3],[151.0, 200, 'K', 3],[3.0, 200, 'K', 1]

N
###Scattering mechanisms in textured FeGe thin films: magnetoresistance and the anomalous Hall effect|N. A. Porter,J. C. Gartside,C. H. Marrows###
(735326, 735326)
 No featurescan be found in the temperature or field dependence of the longitudinalresistivity that belie the presence of the underlying magnetic phase transitionat T<missing VAR>N the marked changes in behavior are at much lower temperatures.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[336.0, 2, 'K', 6],[332.0, 5, 'K', 5],[230.0, 80, 'K', 3],[207.0, 200, 'K', 3],[59.0, 200, 'K', 1]

W
###Quantum and Classical Magnetoresistance in Ambipolar Topological Insulator Transistors with Gate-tunable Bulk and Surface Conduction|Jifa Tian,Cuizu Chang,Helin Cao,Ke He,Xucun Ma,Qikun Xue,Yong P. Chen###
(735507, 735507)
 Weak antilocalization (WAL) and linear magnetoresistance (LMR) are two mostcommonly observed magnetoresistance (MR) phenomena in topological insulators(T<missing VAR>Is) and often attributed to the Dirac topological surface states (T<missing VAR>SS).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[215.0, 2, 'orders', 2],[337.0, 10, 'times', 3]

S
###Quantum and Classical Magnetoresistance in Ambipolar Topological Insulator Transistors with Gate-tunable Bulk and Surface Conduction|Jifa Tian,Cuizu Chang,Helin Cao,Ke He,Xucun Ma,Qikun Xue,Yong P. Chen###
(735577, 735577)
 Weak antilocalization (WAL) and linear magnetoresistance (LMR) are two mostcommonly observed magnetoresistance (MR) phenomena in topological insulators(T<missing VAR>Is) and often attributed to the Dirac topological surface states (T<missing VAR>SS).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 2, 'orders', 2],[267.0, 10, 'times', 3]

I
###Quantum and Classical Magnetoresistance in Ambipolar Topological Insulator Transistors with Gate-tunable Bulk and Surface Conduction|Jifa Tian,Cuizu Chang,Helin Cao,Ke He,Xucun Ma,Qikun Xue,Yong P. Chen###
(735639, 735639)
However, ambiguities exist because these phenomena could also come from bulkstates (often carrying significant conduction in many T<missing VAR>Is) and are observableeven in non-T<missing VAR>I materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 2, 'orders', 1],[205.0, 10, 'times', 2]

I
###Quantum and Classical Magnetoresistance in Ambipolar Topological Insulator Transistors with Gate-tunable Bulk and Surface Conduction|Jifa Tian,Cuizu Chang,Helin Cao,Ke He,Xucun Ma,Qikun Xue,Yong P. Chen###
(735658, 735658)
 Here, we demonstrate back-gated ambipolar T<missing VAR>Ifield-effect transistors in (Bi0.04Sb0.96)2Te3 thin films grown by molecularbeam epitaxy on SrTiO3(111), exhibiting a large carrier density tunability (bynearly 2 orders of magnitude) and a metal-insulator transition in the bulk(allowing effectively switching off the bulk conduction).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 2, 'orders', 0],[186.0, 10, 'times', 1]

(Bi0.04Sb0.96)2Te3
###Quantum and Classical Magnetoresistance in Ambipolar Topological Insulator Transistors with Gate-tunable Bulk and Surface Conduction|Jifa Tian,Cuizu Chang,Helin Cao,Ke He,Xucun Ma,Qikun Xue,Yong P. Chen###
(735669, 735677)
 Here, we demonstrate back-gated ambipolar T<missing VAR>Ifield-effect transistors in (Bi0.04Sb0.96)2Te3 thin films grown by molecularbeam epitaxy on SrTiO3(111), exhibiting a large carrier density tunability (bynearly 2 orders of magnitude) and a metal-insulator transition in the bulk(allowing effectively switching off the bulk conduction).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.384,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.016,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 2, 'orders', 0],[167.0, 10, 'times', 1]

O3
###Quantum and Classical Magnetoresistance in Ambipolar Topological Insulator Transistors with Gate-tunable Bulk and Surface Conduction|Jifa Tian,Cuizu Chang,Helin Cao,Ke He,Xucun Ma,Qikun Xue,Yong P. Chen###
(735698, 735699)
 Here, we demonstrate back-gated ambipolar T<missing VAR>Ifield-effect transistors in (Bi0.04Sb0.96)2Te3 thin films grown by molecularbeam epitaxy on SrTiO3(111), exhibiting a large carrier density tunability (bynearly 2 orders of magnitude) and a metal-insulator transition in the bulk(allowing effectively switching off the bulk conduction).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 2, 'orders', 0],[145.0, 10, 'times', 1]

SS
###Quantum and Classical Magnetoresistance in Ambipolar Topological Insulator Transistors with Gate-tunable Bulk and Surface Conduction|Jifa Tian,Cuizu Chang,Helin Cao,Ke He,Xucun Ma,Qikun Xue,Yong P. Chen###
(735781, 735782)
 Tuning the Fermilevel from bulk band to T<missing VAR>SS strongly enhances both the WAL<missing VAR> (increasing thenumber of quantum coherent channels from one to peak around two) and LMR(increasing its slope by up to 10 times).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 2, 'orders', 1],[62.0, 10, 'times', 0]

W
###Quantum and Classical Magnetoresistance in Ambipolar Topological Insulator Transistors with Gate-tunable Bulk and Surface Conduction|Jifa Tian,Cuizu Chang,Helin Cao,Ke He,Xucun Ma,Qikun Xue,Yong P. Chen###
(735792, 735792)
 Tuning the Fermilevel from bulk band to T<missing VAR>SS strongly enhances both the WAL<missing VAR> (increasing thenumber of quantum coherent channels from one to peak around two) and LMR(increasing its slope by up to 10 times).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 2, 'orders', 1],[52.0, 10, 'times', 0]

SS
###Quantum and Classical Magnetoresistance in Ambipolar Topological Insulator Transistors with Gate-tunable Bulk and Surface Conduction|Jifa Tian,Cuizu Chang,Helin Cao,Ke He,Xucun Ma,Qikun Xue,Yong P. Chen###
(735850, 735851)
 The SS-enhanced LMR is accompanied bya strongly nonlinear Hall effect, suggesting important roles of chargeinhomogeneity (and a related classical LMR), although existing models of LMRcannot capture all aspects of our data.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 2, 'orders', 2],[6.0, 10, 'times', 1]

SS
###Quantum and Classical Magnetoresistance in Ambipolar Topological Insulator Transistors with Gate-tunable Bulk and Surface Conduction|Jifa Tian,Cuizu Chang,Helin Cao,Ke He,Xucun Ma,Qikun Xue,Yong P. Chen###
(735985, 735986)
 Our systematic gate and temperaturedependent magnetotransport studies provide deeper insights into the nature ofboth MR phenomena and reveal differences between bulk and T<missing VAR>SS transport in T<missing VAR>Irelated materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[263.0, 2, 'orders', 3],[141.0, 10, 'times', 2]

I
###Quantum and Classical Magnetoresistance in Ambipolar Topological Insulator Transistors with Gate-tunable Bulk and Surface Conduction|Jifa Tian,Cuizu Chang,Helin Cao,Ke He,Xucun Ma,Qikun Xue,Yong P. Chen###
(735993, 735993)
 Our systematic gate and temperaturedependent magnetotransport studies provide deeper insights into the nature ofboth MR phenomena and reveal differences between bulk and T<missing VAR>SS transport in T<missing VAR>Irelated materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[271.0, 2, 'orders', 3],[149.0, 10, 'times', 2]

Eu
###Effect of Eu magnetism on the electronic properties of the candidate Dirac material EuMnBi2|Andrew F. May,Michael A. McGuire,Brian C. Sales###
(736013, 736013)
Effect of Eu magnetism on the electronic properties of the candidate Dirac material EuMnBi2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[215.0, 5.4, 'T', 5],[218.0, 5, 'K', 5],[241.0, 13, 'T', 6],[244.0, 5, 'K', 6],[311.0, 310, 'K', 7],[351.0, 650, '%', 8],[355.0, 5, 'K', 8],[358.0, 12, 'T', 8]

EuMnBi2
###Effect of Eu magnetism on the electronic properties of the candidate Dirac material EuMnBi2|Andrew F. May,Michael A. McGuire,Brian C. Sales###
(736035, 736038)
Effect of Eu magnetism on the electronic properties of the candidate Dirac material EuMnBi2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[190.0, 5.4, 'T', 5],[193.0, 5, 'K', 5],[216.0, 13, 'T', 6],[219.0, 5, 'K', 6],[286.0, 310, 'K', 7],[326.0, 650, '%', 8],[330.0, 5, 'K', 8],[333.0, 12, 'T', 8]

EuMnBi2
###Effect of Eu magnetism on the electronic properties of the candidate Dirac material EuMnBi2|Andrew F. May,Michael A. McGuire,Brian C. Sales###
(736061, 736064)
 The crystal structure and physical properties of the layered material EuMnBi2have been characterized by measurements on single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 5.4, 'T', 4],[167.0, 5, 'K', 4],[190.0, 13, 'T', 5],[193.0, 5, 'K', 5],[260.0, 310, 'K', 6],[300.0, 650, '%', 7],[304.0, 5, 'K', 7],[307.0, 12, 'T', 7]

EuMnBi2
###Effect of Eu magnetism on the electronic properties of the candidate Dirac material EuMnBi2|Andrew F. May,Michael A. McGuire,Brian C. Sales###
(736084, 736087)
 EuMnBi2 isisostructural with the Dirac material SrMnBi2 based on single crystal x<missing VAR>-raydiffraction, crystallizing in the I4/mmm space group (No.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 5.4, 'T', 3],[144.0, 5, 'K', 3],[167.0, 13, 'T', 4],[170.0, 5, 'K', 4],[237.0, 310, 'K', 5],[277.0, 650, '%', 6],[281.0, 5, 'K', 6],[284.0, 12, 'T', 6]

SrMnBi2
###Effect of Eu magnetism on the electronic properties of the candidate Dirac material EuMnBi2|Andrew F. May,Michael A. McGuire,Brian C. Sales###
(736102, 736105)
 EuMnBi2 isisostructural with the Dirac material SrMnBi2 based on single crystal x<missing VAR>-raydiffraction, crystallizing in the I4/mmm space group (No.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 5.4, 'T', 3],[126.0, 5, 'K', 3],[149.0, 13, 'T', 4],[152.0, 5, 'K', 4],[219.0, 310, 'K', 5],[259.0, 650, '%', 6],[263.0, 5, 'K', 6],[266.0, 12, 'T', 6]

I4
###Effect of Eu magnetism on the electronic properties of the candidate Dirac material EuMnBi2|Andrew F. May,Michael A. McGuire,Brian C. Sales###
(736129, 736130)
 EuMnBi2 isisostructural with the Dirac material SrMnBi2 based on single crystal x<missing VAR>-raydiffraction, crystallizing in the I4/mmm space group (No.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 5.4, 'T', 3],[101.0, 5, 'K', 3],[124.0, 13, 'T', 4],[127.0, 5, 'K', 4],[194.0, 310, 'K', 5],[234.0, 650, '%', 6],[238.0, 5, 'K', 6],[241.0, 12, 'T', 6]

No
###Effect of Eu magnetism on the electronic properties of the candidate Dirac material EuMnBi2|Andrew F. May,Michael A. McGuire,Brian C. Sales###
(736139, 736139)
 EuMnBi2 isisostructural with the Dirac material SrMnBi2 based on single crystal x<missing VAR>-raydiffraction, crystallizing in the I4/mmm space group (No.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0
[89.0, 5.4, 'T', 3],[92.0, 5, 'K', 3],[115.0, 13, 'T', 4],[118.0, 5, 'K', 4],[185.0, 310, 'K', 5],[225.0, 650, '%', 6],[229.0, 5, 'K', 6],[232.0, 12, 'T', 6]

F
###Effect of Eu magnetism on the electronic properties of the candidate Dirac material EuMnBi2|Andrew F. May,Michael A. McGuire,Brian C. Sales###
(736159, 736159)
 Magneticsusceptibility measurements suggest antiferromagnetic (AFM) ordering of momentson divalent Eu ions near T<missing VAR>N22K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 5.4, 'T', 1],[72.0, 5, 'K', 1],[95.0, 13, 'T', 2],[98.0, 5, 'K', 2],[165.0, 310, 'K', 3],[205.0, 650, '%', 4],[209.0, 5, 'K', 4],[212.0, 12, 'T', 4]

Eu
###Effect of Eu magnetism on the electronic properties of the candidate Dirac material EuMnBi2|Andrew F. May,Michael A. McGuire,Brian C. Sales###
(736174, 736174)
 Magneticsusceptibility measurements suggest antiferromagnetic (AFM) ordering of momentson divalent Eu ions near T<missing VAR>N22K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 5.4, 'T', 1],[57.0, 5, 'K', 1],[80.0, 13, 'T', 2],[83.0, 5, 'K', 2],[150.0, 310, 'K', 3],[190.0, 650, '%', 4],[194.0, 5, 'K', 4],[197.0, 12, 'T', 4]

N22K
###Effect of Eu magnetism on the electronic properties of the candidate Dirac material EuMnBi2|Andrew F. May,Michael A. McGuire,Brian C. Sales###
(736181, 736183)
 Magneticsusceptibility measurements suggest antiferromagnetic (AFM) ordering of momentson divalent Eu ions near T<missing VAR>N22K.
Featurization terminated normally.
0,0,0,0,0,0,0.9565217391304348,0,0,0,0,0,0,0,0,0,0,0,0.043478260869565216,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 5.4, 'T', 1],[48.0, 5, 'K', 1],[71.0, 13, 'T', 2],[74.0, 5, 'K', 2],[141.0, 310, 'K', 3],[181.0, 650, '%', 4],[185.0, 5, 'K', 4],[188.0, 12, 'T', 4]

Eu
###Effect of Eu magnetism on the electronic properties of the candidate Dirac material EuMnBi2|Andrew F. May,Michael A. McGuire,Brian C. Sales###
(736197, 736197)
 For low fields, the ordered Eu moments arealigned along the c<missing VAR>-axis, and a spin-flop is observed near 5.4T at 5K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 5.4, 'T', 0],[34.0, 5, 'K', 0],[57.0, 13, 'T', 1],[60.0, 5, 'K', 1],[127.0, 310, 'K', 2],[167.0, 650, '%', 3],[171.0, 5, 'K', 3],[174.0, 12, 'T', 3]

Eu2
###Effect of Eu magnetism on the electronic properties of the candidate Dirac material EuMnBi2|Andrew F. May,Michael A. McGuire,Brian C. Sales###
(736273, 736274)
 Themoment is not saturated in an applied field of 13T at 5K, which is uncommon forcompounds containing Eu2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 5.4, 'T', 1],[42.0, 5, 'K', 1],[19.0, 13, 'T', 0],[16.0, 5, 'K', 0],[50.0, 310, 'K', 1],[90.0, 650, '%', 2],[94.0, 5, 'K', 2],[97.0, 12, 'T', 2]

Eu
###Effect of Eu magnetism on the electronic properties of the candidate Dirac material EuMnBi2|Andrew F. May,Michael A. McGuire,Brian C. Sales###
(736298, 736298)
 The magnetic behavior suggests an anisotropyenhancement via interaction between Eu and the Mn moments that appear to beorder antiferromagnetically below approximately 310K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 5.4, 'T', 2],[67.0, 5, 'K', 2],[44.0, 13, 'T', 1],[41.0, 5, 'K', 1],[26.0, 310, 'K', 0],[66.0, 650, '%', 1],[70.0, 5, 'K', 1],[73.0, 12, 'T', 1]

Mn
###Effect of Eu magnetism on the electronic properties of the candidate Dirac material EuMnBi2|Andrew F. May,Michael A. McGuire,Brian C. Sales###
(736304, 736304)
 The magnetic behavior suggests an anisotropyenhancement via interaction between Eu and the Mn moments that appear to beorder antiferromagnetically below approximately 310K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 5.4, 'T', 2],[73.0, 5, 'K', 2],[50.0, 13, 'T', 1],[47.0, 5, 'K', 1],[20.0, 310, 'K', 0],[60.0, 650, '%', 1],[64.0, 5, 'K', 1],[67.0, 12, 'T', 1]

N
###Effect of Eu magnetism on the electronic properties of the candidate Dirac material EuMnBi2|Andrew F. May,Michael A. McGuire,Brian C. Sales###
(736398, 736398)
 Hall effectmeasurements reveal a decrease in the carrier density below T<missing VAR>N, which impliesa manipulation of the Fermi surface by magnetism on the sites surrounding theBi square nets that lead to Dirac cones in this family of materials.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[170.0, 5.4, 'T', 4],[167.0, 5, 'K', 4],[144.0, 13, 'T', 3],[141.0, 5, 'K', 3],[74.0, 310, 'K', 2],[34.0, 650, '%', 1],[30.0, 5, 'K', 1],[27.0, 12, 'T', 1]

Bi
###Effect of Eu magnetism on the electronic properties of the candidate Dirac material EuMnBi2|Andrew F. May,Michael A. McGuire,Brian C. Sales###
(736433, 736433)
 Hall effectmeasurements reveal a decrease in the carrier density below T<missing VAR>N, which impliesa manipulation of the Fermi surface by magnetism on the sites surrounding theBi square nets that lead to Dirac cones in this family of materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, 5.4, 'T', 4],[202.0, 5, 'K', 4],[179.0, 13, 'T', 3],[176.0, 5, 'K', 3],[109.0, 310, 'K', 2],[69.0, 650, '%', 1],[65.0, 5, 'K', 1],[62.0, 12, 'T', 1]

Bi2Te3
###Evidence for topological surface states in metallic single crystals of Bi2Te3|Sourabh Barua,K. P. Rajeev,Anjan K. Gupta###
(736488, 736491)
Evidence for topological surface states in metallic single crystals of Bi2Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 1.5, 'K', 4],[164.0, 290, 'K', 4],[191.0, 20, 'K', 4]

Bi2Te3
###Evidence for topological surface states in metallic single crystals of Bi2Te3|Sourabh Barua,K. P. Rajeev,Anjan K. Gupta###
(736494, 736497)
 Bi2Te3 is a member of a new class of materials known as topologicalinsulators which are supposed to be insulating in the bulk and conducting onthe surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 1.5, 'K', 3],[158.0, 290, 'K', 3],[185.0, 20, 'K', 3]

Bi2Te3
###Evidence for topological surface states in metallic single crystals of Bi2Te3|Sourabh Barua,K. P. Rajeev,Anjan K. Gupta###
(736620, 736623)
 Wereport low temperature magnetotransport measurements on single crystal samplesof Bi2Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 1.5, 'K', 1],[32.0, 290, 'K', 1],[59.0, 20, 'K', 1]

H
###Evidence for topological surface states in metallic single crystals of Bi2Te3|Sourabh Barua,K. P. Rajeev,Anjan K. Gupta###
(736669, 736669)
 We observe metallic character in our samples and large and linearmagnetoresistance from 1.5 K to 290 K with prominent Shubnikov-de Haas (SdH)oscillations whose traces persist upto 20 K.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 1.5, 'K', 0],[14.0, 290, 'K', 0],[13.0, 20, 'K', 0]

Bi2Te3
###Evidence for topological surface states in metallic single crystals of Bi2Te3|Sourabh Barua,K. P. Rajeev,Anjan K. Gupta###
(736784, 736787)
 This indicatesthat we might have obtained evidence for the topological surface states inmetallic single crystals of Bi2Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 1.5, 'K', 2],[129.0, 290, 'K', 2],[102.0, 20, 'K', 2]

H
###Evidence for topological surface states in metallic single crystals of Bi2Te3|Sourabh Barua,K. P. Rajeev,Anjan K. Gupta###
(736810, 736810)
 Other physical quantities obtained from theanalysis of the SdH oscillations are also in close agreement with thosereported for the topological surface states.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 1.5, 'K', 3],[155.0, 290, 'K', 3],[128.0, 20, 'K', 3]

Sr2IrO4
###Anisotropic magnetoresistance in antiferromagnetic Sr2IrO4|Cheng Wang,Heidi Seinige,Gang Cao,Jian-Shi Zhou,John B. Goodenough,Maxim Tsoi###
(736926, 736930)
Anisotropic magnetoresistance in antiferromagnetic Sr2IrO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 28, '%', 3],[235.0, -14, '%', 4],[346.0, 3, 'd', 6],[358.0, -0.5, '%', 6],[387.0, 5, 'd', 6]

F
###Anisotropic magnetoresistance in antiferromagnetic Sr2IrO4|Cheng Wang,Heidi Seinige,Gang Cao,Jian-Shi Zhou,John B. Goodenough,Maxim Tsoi###
(736970, 736970)
 We report point-contact measurements of anisotropic magnetoresistance (AMR)in a single crystal of antiferromagnetic (AFM) Mott insulator Sr2IrO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 28, '%', 2],[195.0, -14, '%', 3],[306.0, 3, 'd', 5],[318.0, -0.5, '%', 5],[347.0, 5, 'd', 5]

Sr2IrO4
###Anisotropic magnetoresistance in antiferromagnetic Sr2IrO4|Cheng Wang,Heidi Seinige,Gang Cao,Jian-Shi Zhou,John B. Goodenough,Maxim Tsoi###
(736978, 736982)
 We report point-contact measurements of anisotropic magnetoresistance (AMR)in a single crystal of antiferromagnetic (AFM) Mott insulator Sr2IrO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 28, '%', 2],[183.0, -14, '%', 3],[294.0, 3, 'd', 5],[306.0, -0.5, '%', 5],[335.0, 5, 'd', 5]

IrO2
###Anisotropic magnetoresistance in antiferromagnetic Sr2IrO4|Cheng Wang,Heidi Seinige,Gang Cao,Jian-Shi Zhou,John B. Goodenough,Maxim Tsoi###
(737077, 737079)
 The measurements at liquid nitrogen temperaturerevealed negative magnetoresistances (M<missing VAR>Rs) (up to 28%) for modest magneticfields (250 mT) applied within the IrO2 a-b<missing VAR> plane and electric currents flowingperpendicular to the plane.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 28, '%', 0],[86.0, -14, '%', 1],[197.0, 3, 'd', 3],[209.0, -0.5, '%', 3],[238.0, 5, 'd', 3]

F
###Anisotropic magnetoresistance in antiferromagnetic Sr2IrO4|Cheng Wang,Heidi Seinige,Gang Cao,Jian-Shi Zhou,John B. Goodenough,Maxim Tsoi###
(737231, 737231)
 We tentatively attribute thefour-fold symmetry to the crystalline component of AMR and the field-inducedtransition to the effects of applied field on the canting of AFM<missing VAR>-coupledmoments in Sr2IrO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[180.0, 28, '%', 2],[66.0, -14, '%', 1],[45.0, 3, 'd', 1],[57.0, -0.5, '%', 1],[86.0, 5, 'd', 1]

Sr2IrO4
###Anisotropic magnetoresistance in antiferromagnetic Sr2IrO4|Cheng Wang,Heidi Seinige,Gang Cao,Jian-Shi Zhou,John B. Goodenough,Maxim Tsoi###
(737241, 737245)
 We tentatively attribute thefour-fold symmetry to the crystalline component of AMR and the field-inducedtransition to the effects of applied field on the canting of AFM<missing VAR>-coupledmoments in Sr2IrO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[190.0, 28, '%', 2],[76.0, -14, '%', 1],[31.0, 3, 'd', 1],[43.0, -0.5, '%', 1],[72.0, 5, 'd', 1]

CrSi2
###Kinetic properties of the two-dimensional conducting system formed by CrSi2 nanocrystallites in plane (111) of silicon|V. V. Andrievskii,Yu. F. Komnik,I. B. Berkutov,I. G. Mirzoiev,N. G. Galkin,D. L. Goroshko###
(737463, 737465)
Kinetic properties of the two-dimensional conducting system formed by CrSi2 nanocrystallites in plane (111) of silicon.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 5, 'T', 1],[59.0, 10, 'to', 1],[60.0, 300, 'K', 1],[72.0, 10, 'mkA', 1],[75.0, 10, 'mA', 1]

F
###Kinetic properties of the two-dimensional conducting system formed by CrSi2 nanocrystallites in plane (111) of silicon|V. V. Andrievskii,Yu. F. Komnik,I. B. Berkutov,I. G. Mirzoiev,N. G. Galkin,D. L. Goroshko###
(737513, 737513)
 The behaviors of resistance, magnetoresistance (up to 5 T), and Hallelectromotive force (EMF) with varying temperature (from 10 to 300 K) andmeasuring current (from 10 mkA to 10 mA) are studied for the Si sample withCrSi2 nanocrystallites (NC) in the plane (111).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 5, 'T', 0],[11.0, 10, 'to', 0],[12.0, 300, 'K', 0],[24.0, 10, 'mkA', 0],[27.0, 10, 'mA', 0]

Si
###Kinetic properties of the two-dimensional conducting system formed by CrSi2 nanocrystallites in plane (111) of silicon|V. V. Andrievskii,Yu. F. Komnik,I. B. Berkutov,I. G. Mirzoiev,N. G. Galkin,D. L. Goroshko###
(737551, 737551)
 The behaviors of resistance, magnetoresistance (up to 5 T), and Hallelectromotive force (EMF) with varying temperature (from 10 to 300 K) andmeasuring current (from 10 mkA to 10 mA) are studied for the Si sample withCrSi2 nanocrystallites (NC) in the plane (111).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 5, 'T', 0],[27.0, 10, 'to', 0],[26.0, 300, 'K', 0],[14.0, 10, 'mkA', 0],[11.0, 10, 'mA', 0]

CrSi2
###Kinetic properties of the two-dimensional conducting system formed by CrSi2 nanocrystallites in plane (111) of silicon|V. V. Andrievskii,Yu. F. Komnik,I. B. Berkutov,I. G. Mirzoiev,N. G. Galkin,D. L. Goroshko###
(737558, 737560)
 The behaviors of resistance, magnetoresistance (up to 5 T), and Hallelectromotive force (EMF) with varying temperature (from 10 to 300 K) andmeasuring current (from 10 mkA to 10 mA) are studied for the Si sample withCrSi2 nanocrystallites (NC) in the plane (111).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 5, 'T', 0],[34.0, 10, 'to', 0],[33.0, 300, 'K', 0],[21.0, 10, 'mkA', 0],[18.0, 10, 'mA', 0]

(NC)
###Kinetic properties of the two-dimensional conducting system formed by CrSi2 nanocrystallites in plane (111) of silicon|V. V. Andrievskii,Yu. F. Komnik,I. B. Berkutov,I. G. Mirzoiev,N. G. Galkin,D. L. Goroshko###
(737564, 737567)
 The behaviors of resistance, magnetoresistance (up to 5 T), and Hallelectromotive force (EMF) with varying temperature (from 10 to 300 K) andmeasuring current (from 10 mkA to 10 mA) are studied for the Si sample withCrSi2 nanocrystallites (NC) in the plane (111).
Featurization successful!
0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 5, 'T', 0],[40.0, 10, 'to', 0],[39.0, 300, 'K', 0],[27.0, 10, 'mkA', 0],[24.0, 10, 'mA', 0]

NC
###Kinetic properties of the two-dimensional conducting system formed by CrSi2 nanocrystallites in plane (111) of silicon|V. V. Andrievskii,Yu. F. Komnik,I. B. Berkutov,I. G. Mirzoiev,N. G. Galkin,D. L. Goroshko###
(737603, 737604)
 The conduction in suchheterostructure proceeds in the plane with the NC and is the conduction of atwo-dimensional system of charge carriers that shows some unusual effects.
Featurization terminated normally.
0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 5, 'T', 1],[79.0, 10, 'to', 1],[78.0, 300, 'K', 1],[66.0, 10, 'mkA', 1],[63.0, 10, 'mA', 1]

In
###Inter-planar coupling dependent magnetoresistivity in high purity layered metals|N. Kikugawa,P. Goswami,A. Kiswandhi,E. S. Choi,D. Graf,R. E. Baumbach,J. S. Brooks,K. Sugii,Y. Iida,M. Nishio,S. Uji,T. Terashima,P. M. C. Rourke,N. E. Hussey,H. Takatsu,S. Yonezawa,Y. Maeno,L. Balicas###
(738196, 738196)
 In its original formulation, the anomaly is predicted to violateseparate number conservation laws for left- and right-handed chiral- (e.g.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PdCoO2
###Inter-planar coupling dependent magnetoresistivity in high purity layered metals|N. Kikugawa,P. Goswami,A. Kiswandhi,E. S. Choi,D. Graf,R. E. Baumbach,J. S. Brooks,K. Sugii,Y. Iida,M. Nishio,S. Uji,T. Terashima,P. M. C. Rourke,N. E. Hussey,H. Takatsu,S. Yonezawa,Y. Maeno,L. Balicas###
(738259, 738262)
 Its observation in PdCoO2, PtCoO2 and Sr2RuO4suggests that the anomaly affects the transport of clean conductors,particularly near the quantum limit.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PtCoO2
###Inter-planar coupling dependent magnetoresistivity in high purity layered metals|N. Kikugawa,P. Goswami,A. Kiswandhi,E. S. Choi,D. Graf,R. E. Baumbach,J. S. Brooks,K. Sugii,Y. Iida,M. Nishio,S. Uji,T. Terashima,P. M. C. Rourke,N. E. Hussey,H. Takatsu,S. Yonezawa,Y. Maeno,L. Balicas###
(738265, 738268)
 Its observation in PdCoO2, PtCoO2 and Sr2RuO4suggests that the anomaly affects the transport of clean conductors,particularly near the quantum limit.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr2RuO4
###Inter-planar coupling dependent magnetoresistivity in high purity layered metals|N. Kikugawa,P. Goswami,A. Kiswandhi,E. S. Choi,D. Graf,R. E. Baumbach,J. S. Brooks,K. Sugii,Y. Iida,M. Nishio,S. Uji,T. Terashima,P. M. C. Rourke,N. E. Hussey,H. Takatsu,S. Yonezawa,Y. Maeno,L. Balicas###
(738272, 738276)
 Its observation in PdCoO2, PtCoO2 and Sr2RuO4suggests that the anomaly affects the transport of clean conductors,particularly near the quantum limit.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Defect-Induced Kondo Effect in graphene: Role of Localized State of $π$ Electrons|Taro Kanao,Hiroyasu Matsuura,Masao Ogata###
(738486, 738486)
 In the experimental result, it has beenshown that the negative magnetoresistance is ten times larger than the usualKondo effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Defect-Induced Kondo Effect in graphene: Role of Localized State of $π$ Electrons|Taro Kanao,Hiroyasu Matsuura,Masao Ogata###
(738532, 738532)
 In order to clarify the mechanism of the magnetic sensitiveKondo effect, as a first step, we study an orbital magnetic field dependence ofthe localized pi orbital by a tight-binding model with a Peierls phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OS
###Defect-Induced Kondo Effect in graphene: Role of Localized State of $π$ Electrons|Taro Kanao,Hiroyasu Matsuura,Masao Ogata###
(738655, 738656)
 Wefind that as the magnetic field increases, the spectral width of the localizedpi orbital increases and the local D<missing VAR>OS at the Fermi level decreases.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbP
###Extremely large magnetoresistance and ultrahigh mobility in the topological Weyl semimetal NbP|Chandra Shekhar,Ajaya K. Nayak,Yan Sun,Marcus Schmidt,Michael Nicklas,Inge Leermakers,Uli Zeitler,Zhongkai Liu,Yulin Chen,Walter Schnelle,Juri Grin,Claudia Felser,Binghai Yan###
(738772, 738773)
Extremely large magnetoresistance and ultrahigh mobility in the topological Weyl semimetal NbP.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[283.0, 850, ',', 6],[290.0, 1.85, 'K', 6],[313.0, 9, 'T', 6]

Te2
###Extremely large magnetoresistance and ultrahigh mobility in the topological Weyl semimetal NbP|Chandra Shekhar,Ajaya K. Nayak,Yan Sun,Marcus Schmidt,Michael Nicklas,Inge Leermakers,Uli Zeitler,Zhongkai Liu,Yulin Chen,Walter Schnelle,Juri Grin,Claudia Felser,Binghai Yan###
(738816, 738817)
 WTe2)have started a new trend to realize a large magnetoresistance, which is thechange of electrical resistance by an external magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[239.0, 850, ',', 3],[246.0, 1.85, 'K', 3],[269.0, 9, 'T', 3]

WS
###Extremely large magnetoresistance and ultrahigh mobility in the topological Weyl semimetal NbP|Chandra Shekhar,Ajaya K. Nayak,Yan Sun,Marcus Schmidt,Michael Nicklas,Inge Leermakers,Uli Zeitler,Zhongkai Liu,Yulin Chen,Walter Schnelle,Juri Grin,Claudia Felser,Binghai Yan###
(738874, 738875)
 Weyl semimetal(WSM) is a topological semimetal with massless relativistic electrons as thethree-dimensional analogue of graphene and promises exotic transport propertiesand surface states, which are different from those of the famous topologicalinsulators (T<missing VAR>Is).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 850, ',', 2],[188.0, 1.85, 'K', 2],[211.0, 9, 'T', 2]

In
###Extremely large magnetoresistance and ultrahigh mobility in the topological Weyl semimetal NbP|Chandra Shekhar,Ajaya K. Nayak,Yan Sun,Marcus Schmidt,Michael Nicklas,Inge Leermakers,Uli Zeitler,Zhongkai Liu,Yulin Chen,Walter Schnelle,Juri Grin,Claudia Felser,Binghai Yan###
(738955, 738955)
 In this letter, we choose to utilize NbP in magneto-transportexperiments because its band structure is on assembly of a WSM<missing VAR> and a normalsemimetal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 850, ',', 1],[108.0, 1.85, 'K', 1],[131.0, 9, 'T', 1]

NbP
###Extremely large magnetoresistance and ultrahigh mobility in the topological Weyl semimetal NbP|Chandra Shekhar,Ajaya K. Nayak,Yan Sun,Marcus Schmidt,Michael Nicklas,Inge Leermakers,Uli Zeitler,Zhongkai Liu,Yulin Chen,Walter Schnelle,Juri Grin,Claudia Felser,Binghai Yan###
(738970, 738971)
 In this letter, we choose to utilize NbP in magneto-transportexperiments because its band structure is on assembly of a WSM<missing VAR> and a normalsemimetal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 850, ',', 1],[92.0, 1.85, 'K', 1],[115.0, 9, 'T', 1]

WS
###Extremely large magnetoresistance and ultrahigh mobility in the topological Weyl semimetal NbP|Chandra Shekhar,Ajaya K. Nayak,Yan Sun,Marcus Schmidt,Michael Nicklas,Inge Leermakers,Uli Zeitler,Zhongkai Liu,Yulin Chen,Walter Schnelle,Juri Grin,Claudia Felser,Binghai Yan###
(739000, 739001)
 In this letter, we choose to utilize NbP in magneto-transportexperiments because its band structure is on assembly of a WSM<missing VAR> and a normalsemimetal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 850, ',', 1],[62.0, 1.85, 'K', 1],[85.0, 9, 'T', 1]

NbP
###Extremely large magnetoresistance and ultrahigh mobility in the topological Weyl semimetal NbP|Chandra Shekhar,Ajaya K. Nayak,Yan Sun,Marcus Schmidt,Michael Nicklas,Inge Leermakers,Uli Zeitler,Zhongkai Liu,Yulin Chen,Walter Schnelle,Juri Grin,Claudia Felser,Binghai Yan###
(739022, 739023)
 Such a combination in NbP indeed leads to the observation ofremarkable transport properties, an extremely large magnetoresistance of850,000 % at 1.85 K (250 % at room temperature) in a magnetic field of 9 Twithout any signs of saturation, and ultrahigh carrier mobility of5times106 cm2 V-1 s<missing VAR>-1 accompanied by strong Shubnikov-deHass (SdH) oscillations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 850, ',', 0],[40.0, 1.85, 'K', 0],[63.0, 9, 'T', 0]

V
###Extremely large magnetoresistance and ultrahigh mobility in the topological Weyl semimetal NbP|Chandra Shekhar,Ajaya K. Nayak,Yan Sun,Marcus Schmidt,Michael Nicklas,Inge Leermakers,Uli Zeitler,Zhongkai Liu,Yulin Chen,Walter Schnelle,Juri Grin,Claudia Felser,Binghai Yan###
(739119, 739119)
 Such a combination in NbP indeed leads to the observation ofremarkable transport properties, an extremely large magnetoresistance of850,000 % at 1.85 K (250 % at room temperature) in a magnetic field of 9 Twithout any signs of saturation, and ultrahigh carrier mobility of5times106 cm2 V-1 s<missing VAR>-1 accompanied by strong Shubnikov-deHass (SdH) oscillations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 850, ',', 0],[56.0, 1.85, 'K', 0],[33.0, 9, 'T', 0]

H
###Extremely large magnetoresistance and ultrahigh mobility in the topological Weyl semimetal NbP|Chandra Shekhar,Ajaya K. Nayak,Yan Sun,Marcus Schmidt,Michael Nicklas,Inge Leermakers,Uli Zeitler,Zhongkai Liu,Yulin Chen,Walter Schnelle,Juri Grin,Claudia Felser,Binghai Yan###
(739142, 739142)
 Such a combination in NbP indeed leads to the observation ofremarkable transport properties, an extremely large magnetoresistance of850,000 % at 1.85 K (250 % at room temperature) in a magnetic field of 9 Twithout any signs of saturation, and ultrahigh carrier mobility of5times106 cm2 V-1 s<missing VAR>-1 accompanied by strong Shubnikov-deHass (SdH) oscillations.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 850, ',', 0],[79.0, 1.85, 'K', 0],[56.0, 9, 'T', 0]

NbP
###Extremely large magnetoresistance and ultrahigh mobility in the topological Weyl semimetal NbP|Chandra Shekhar,Ajaya K. Nayak,Yan Sun,Marcus Schmidt,Michael Nicklas,Inge Leermakers,Uli Zeitler,Zhongkai Liu,Yulin Chen,Walter Schnelle,Juri Grin,Claudia Felser,Binghai Yan###
(739148, 739149)
 NbP presents a unique example to consequent design thefunctionality of materials by combining the topological and conventionalphases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 850, ',', 1],[85.0, 1.85, 'K', 1],[62.0, 9, 'T', 1]

H
###Chiral anomaly and transport in Weyl metals|A. A. Burkov###
(739316, 739316)
 We argue that there are two basic phenomena,which are related to chiral anomaly in Weyl metals Anomalous Hall Effect (AHE)and Chiral Magnetic Effect (CME).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Chiral anomaly and transport in Weyl metals|A. A. Burkov###
(739330, 739330)
 We argue that there are two basic phenomena,which are related to chiral anomaly in Weyl metals Anomalous Hall Effect (AHE)and Chiral Magnetic Effect (CME).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Chiral anomaly and transport in Weyl metals|A. A. Burkov###
(739339, 739339)
 While AHE<missing VAR> is in principle present in anyferromagnetic metal, we demonstrate that a magnetic Weyl metal is distinguishedfrom an ordinary ferromagnetic metal by the absence of the extrinsic and theFermi surface part of the intrinsic contributions to the AHE<missing VAR>, as long as theFermi energy is sufficiently close to the Weyl nodes.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Chiral anomaly and transport in Weyl metals|A. A. Burkov###
(739425, 739425)
 While AHE<missing VAR> is in principle present in anyferromagnetic metal, we demonstrate that a magnetic Weyl metal is distinguishedfrom an ordinary ferromagnetic metal by the absence of the extrinsic and theFermi surface part of the intrinsic contributions to the AHE<missing VAR>, as long as theFermi energy is sufficiently close to the Weyl nodes.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Chiral anomaly and transport in Weyl metals|A. A. Burkov###
(739460, 739460)
 The AHE<missing VAR> in a Weyl metalis thus shown to be a purely intrinsic, universal property, fully determined bythe location of the Weyl nodes in the first Brillouin zone.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Chiral anomaly and transport in Weyl metals|A. A. Burkov###
(739524, 739524)
 In other words, aferromagnetic Weyl metal may be thought of as the only example of aferromagnetic metal with a purely intrinsic AHE<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Chiral anomaly and transport in Weyl metals|A. A. Burkov###
(739574, 739574)
 In other words, aferromagnetic Weyl metal may be thought of as the only example of aferromagnetic metal with a purely intrinsic AHE<missing VAR>.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Chiral anomaly and transport in Weyl metals|A. A. Burkov###
(739690, 739690)
 We demonstrate that anexperimentally-observable consequence of CME in magnetotransport in Weyl metalsis a quadratic negative magnetoresistance, which will dominate all othercontributions to magnetoresistance under certain conditions and may be regardedas a smoking-gun transport characteristic, unique to Weyl metals.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Pressure-induced Lifshitz transition in black phosphorus|Z. J. Xiang,G. J. Ye,C. Shang,B. Lei,N. Z. Wang,K. S. Yang,D. Y. Liu,F. B. Meng,X. G. Luo,L. J. Zou,Z. Sun,Y. B. Zhang,X. H. Chen###
(739793, 739793)
 In a semimetal, both electron and hole carriers contribute to the density ofstates at the Fermi level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[318.0, 1.2, 'GPa', 6]

In
###Pressure-induced Lifshitz transition in black phosphorus|Z. J. Xiang,G. J. Ye,C. Shang,B. Lei,N. Z. Wang,K. S. Yang,D. Y. Liu,F. B. Meng,X. G. Luo,L. J. Zou,Z. Sun,Y. B. Zhang,X. H. Chen###
(740092, 740092)
 Inparticular, a Dirac-like fermion emerges at around 1.2 GPa, which iscontinuously tuned by external pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 1.2, 'GPa', 0]

Co
###Brillouin zone spin filtering mechanism of enhanced TMR and correlation effects in Co(0001)/h-BN/Co(0001) magnetic tunnel junction|Sergey V. Faleev,Stuart S. P. Parkin,Oleg N. Mryasov###
(740360, 740360)
 The Brillouin zone spin filtering mechanism of enhanced tunnelingmagnetoresistance (TMR) is described for magnetic tunnel junctions (MTJ) andstudied on an example of the MTJ with hcp Co electrodes and hexagonal BN (h<missing VAR>-BN)spacer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BN
###Brillouin zone spin filtering mechanism of enhanced TMR and correlation effects in Co(0001)/h-BN/Co(0001) magnetic tunnel junction|Sergey V. Faleev,Stuart S. P. Parkin,Oleg N. Mryasov###
(740368, 740369)
 The Brillouin zone spin filtering mechanism of enhanced tunnelingmagnetoresistance (TMR) is described for magnetic tunnel junctions (MTJ) andstudied on an example of the MTJ with hcp Co electrodes and hexagonal BN (h<missing VAR>-BN)spacer.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Brillouin zone spin filtering mechanism of enhanced TMR and correlation effects in Co(0001)/h-BN/Co(0001) magnetic tunnel junction|Sergey V. Faleev,Stuart S. P. Parkin,Oleg N. Mryasov###
(740375, 740375)
 The Brillouin zone spin filtering mechanism of enhanced tunnelingmagnetoresistance (TMR) is described for magnetic tunnel junctions (MTJ) andstudied on an example of the MTJ with hcp Co electrodes and hexagonal BN (h<missing VAR>-BN)spacer.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BN
###Brillouin zone spin filtering mechanism of enhanced TMR and correlation effects in Co(0001)/h-BN/Co(0001) magnetic tunnel junction|Sergey V. Faleev,Stuart S. P. Parkin,Oleg N. Mryasov###
(740485, 740486)
 Owning to the specificcomplex band structure of the h<missing VAR>-BN the spin-dependent tunneling conductance ofthe system is ultra-sensitive to small variations of the Fermi energy positioninside the BN band gap.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BN
###Brillouin zone spin filtering mechanism of enhanced TMR and correlation effects in Co(0001)/h-BN/Co(0001) magnetic tunnel junction|Sergey V. Faleev,Stuart S. P. Parkin,Oleg N. Mryasov###
(740532, 740533)
 Owning to the specificcomplex band structure of the h<missing VAR>-BN the spin-dependent tunneling conductance ofthe system is ultra-sensitive to small variations of the Fermi energy positioninside the BN band gap.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BN
###Brillouin zone spin filtering mechanism of enhanced TMR and correlation effects in Co(0001)/h-BN/Co(0001) magnetic tunnel junction|Sergey V. Faleev,Stuart S. P. Parkin,Oleg N. Mryasov###
(740546, 740547)
 Doping of the BN and, consequentially, changing theFermi energy position could lead to variation of the TMR by several orders ofmagnitude.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Brillouin zone spin filtering mechanism of enhanced TMR and correlation effects in Co(0001)/h-BN/Co(0001) magnetic tunnel junction|Sergey V. Faleev,Stuart S. P. Parkin,Oleg N. Mryasov###
(740680, 740680)
 Our study suggests that new MTJ basedon hcp Co-Pt or Co-Pd disordered alloy electrodes and p<missing VAR>-doped hexagonal BNspacer is a promising candidate for the spin-transfer torque magnetoresistiverandom-access memory (STT-MRAM).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Brillouin zone spin filtering mechanism of enhanced TMR and correlation effects in Co(0001)/h-BN/Co(0001) magnetic tunnel junction|Sergey V. Faleev,Stuart S. P. Parkin,Oleg N. Mryasov###
(740682, 740682)
 Our study suggests that new MTJ basedon hcp Co-Pt or Co-Pd disordered alloy electrodes and p<missing VAR>-doped hexagonal BNspacer is a promising candidate for the spin-transfer torque magnetoresistiverandom-access memory (STT-MRAM).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Brillouin zone spin filtering mechanism of enhanced TMR and correlation effects in Co(0001)/h-BN/Co(0001) magnetic tunnel junction|Sergey V. Faleev,Stuart S. P. Parkin,Oleg N. Mryasov###
(740686, 740686)
 Our study suggests that new MTJ basedon hcp Co-Pt or Co-Pd disordered alloy electrodes and p<missing VAR>-doped hexagonal BNspacer is a promising candidate for the spin-transfer torque magnetoresistiverandom-access memory (STT-MRAM).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pd
###Brillouin zone spin filtering mechanism of enhanced TMR and correlation effects in Co(0001)/h-BN/Co(0001) magnetic tunnel junction|Sergey V. Faleev,Stuart S. P. Parkin,Oleg N. Mryasov###
(740688, 740688)
 Our study suggests that new MTJ basedon hcp Co-Pt or Co-Pd disordered alloy electrodes and p<missing VAR>-doped hexagonal BNspacer is a promising candidate for the spin-transfer torque magnetoresistiverandom-access memory (STT-MRAM).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BN
###Brillouin zone spin filtering mechanism of enhanced TMR and correlation effects in Co(0001)/h-BN/Co(0001) magnetic tunnel junction|Sergey V. Faleev,Stuart S. P. Parkin,Oleg N. Mryasov###
(740704, 740705)
 Our study suggests that new MTJ basedon hcp Co-Pt or Co-Pd disordered alloy electrodes and p<missing VAR>-doped hexagonal BNspacer is a promising candidate for the spin-transfer torque magnetoresistiverandom-access memory (STT-MRAM).
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Brillouin zone spin filtering mechanism of enhanced TMR and correlation effects in Co(0001)/h-BN/Co(0001) magnetic tunnel junction|Sergey V. Faleev,Stuart S. P. Parkin,Oleg N. Mryasov###
(740738, 740738)
 Our study suggests that new MTJ basedon hcp Co-Pt or Co-Pd disordered alloy electrodes and p<missing VAR>-doped hexagonal BNspacer is a promising candidate for the spin-transfer torque magnetoresistiverandom-access memory (STT-MRAM).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W/CoFeB/MgO
###Large spin Hall magnetoresistance and its correlation to the spin-orbit torque in W/CoFeB/MgO structures|Soonha Cho,Seung-heon Chris Baek,Younghun Jo,Byong-Guk Park###
(740783, 740790)
Large spin Hall magnetoresistance and its correlation to the spin-orbit torque in W/CoFeB/MgO structures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[285.0, 1, '%', 5]

In
###Large spin Hall magnetoresistance and its correlation to the spin-orbit torque in W/CoFeB/MgO structures|Soonha Cho,Seung-heon Chris Baek,Younghun Jo,Byong-Guk Park###
(740902, 740902)
 In this work, we report a systematic study ofthe magnetoresistance (MR) of the W/CoFeB/MgO structures and its correlation tothe current-induced torque to the magnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 1, '%', 2]

W/CoFeB/MgO
###Large spin Hall magnetoresistance and its correlation to the spin-orbit torque in W/CoFeB/MgO structures|Soonha Cho,Seung-heon Chris Baek,Younghun Jo,Byong-Guk Park###
(740935, 740942)
 In this work, we report a systematic study ofthe magnetoresistance (MR) of the W/CoFeB/MgO structures and its correlation tothe current-induced torque to the magnetization.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[133.0, 1, '%', 2]

W/CoFeB/MgO
###Large spin Hall magnetoresistance and its correlation to the spin-orbit torque in W/CoFeB/MgO structures|Soonha Cho,Seung-heon Chris Baek,Younghun Jo,Byong-Guk Park###
(741080, 741087)
 The MR of 1% in W/CoFeB/MgO samples isconsiderably larger than those in other structures of Ta/CoFeB/MgO orPt/Co/AlOx, which indicates a larger spin Hall angle of W.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[5.0, 1, '%', 0]

Ta/CoFeB/MgO
###Large spin Hall magnetoresistance and its correlation to the spin-orbit torque in W/CoFeB/MgO structures|Soonha Cho,Seung-heon Chris Baek,Younghun Jo,Byong-Guk Park###
(741110, 741117)
 The MR of 1% in W/CoFeB/MgO samples isconsiderably larger than those in other structures of Ta/CoFeB/MgO orPt/Co/AlOx, which indicates a larger spin Hall angle of W.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[35.0, 1, '%', 0]

Pt/Co/Al
###Large spin Hall magnetoresistance and its correlation to the spin-orbit torque in W/CoFeB/MgO structures|Soonha Cho,Seung-heon Chris Baek,Younghun Jo,Byong-Guk Park###
(741122, 741126)
 The MR of 1% in W/CoFeB/MgO samples isconsiderably larger than those in other structures of Ta/CoFeB/MgO orPt/Co/AlOx, which indicates a larger spin Hall angle of W.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[47.0, 1, '%', 0]

W
###Large spin Hall magnetoresistance and its correlation to the spin-orbit torque in W/CoFeB/MgO structures|Soonha Cho,Seung-heon Chris Baek,Younghun Jo,Byong-Guk Park###
(741146, 741146)
 The MR of 1% in W/CoFeB/MgO samples isconsiderably larger than those in other structures of Ta/CoFeB/MgO orPt/Co/AlOx, which indicates a larger spin Hall angle of W.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 1, '%', 0]

W
###Large spin Hall magnetoresistance and its correlation to the spin-orbit torque in W/CoFeB/MgO structures|Soonha Cho,Seung-heon Chris Baek,Younghun Jo,Byong-Guk Park###
(741157, 741157)
 Moreover, thesimilar W thickness dependence of the MR and the current-induced magnetizationswitching efficiency demonstrates that they share the same underlying physics,which allows one to utilize the MR in non-magnet/ferromagnet structure in orderto understand closely related other spin-orbit coupling effects such as inversespin Hall effect, spin-orbit spin transfer torques, etc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 1, '%', 1]

In
###Negative longitudinal magnetoresistance in Dirac and Weyl metals|A. A. Burkov###
(741423, 741423)
 In this paper we report ona theory of this effect in both Dirac and Weyl metals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi0.96Sb0.04
###Semimetal-semiconductor transition and giant linear magnetoresistances in three-dimensional Dirac semimetal Bi0.96Sb0.04 single crystals|Z. J. Yue,X. L. Wang,S. S. Yan###
(742198, 742201)
Semimetal-semiconductor transition and giant linear magnetoresistances in three-dimensional Dirac semimetal Bi0.96Sb0.04 single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.04,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.96,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 3, 'D', 1],[67.0, 3, 'D', 2],[145.0, 4, '%', 3],[150.0, 3, 'D', 3],[244.0, 8, 'T', 6],[269.0, 6000, '%', 6],[278.0, 5, 'K', 6],[283.0, 300, '%', 6],[292.0, 300, 'K', 6],[326.0, 200, 'K', 7],[353.0, 3, 'D', 8],[372.0, 3, 'D', 8]

Bi1-x
###Semimetal-semiconductor transition and giant linear magnetoresistances in three-dimensional Dirac semimetal Bi0.96Sb0.04 single crystals|Z. J. Yue,X. L. Wang,S. S. Yan###
(742302, 742305)
 Bismuth-antimonyBi1-xSbx can be tuned from a topological insulator to a band insulator througha quantum critical point at x<missing VAR>  4%, where 3D Dirac fermions appear.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[63.0, 3, 'D', 2],[34.0, 3, 'D', 1],[41.0, 4, '%', 0],[46.0, 3, 'D', 0],[140.0, 8, 'T', 3],[165.0, 6000, '%', 3],[174.0, 5, 'K', 3],[179.0, 300, '%', 3],[188.0, 300, 'K', 3],[222.0, 200, 'K', 4],[249.0, 3, 'D', 5],[268.0, 3, 'D', 5]

Bi1-x
###Semimetal-semiconductor transition and giant linear magnetoresistances in three-dimensional Dirac semimetal Bi0.96Sb0.04 single crystals|Z. J. Yue,X. L. Wang,S. S. Yan###
(742378, 742381)
 Here, wereport on a magnetotransport study of Bi1-xSbx at such a quantum criticalpoint.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[139.0, 3, 'D', 3],[110.0, 3, 'D', 2],[32.0, 4, '%', 1],[27.0, 3, 'D', 1],[64.0, 8, 'T', 2],[89.0, 6000, '%', 2],[98.0, 5, 'K', 2],[103.0, 300, '%', 2],[112.0, 300, 'K', 2],[146.0, 200, 'K', 3],[173.0, 3, 'D', 4],[192.0, 3, 'D', 4]

Bi0.96Sb0.04
###Semimetal-semiconductor transition and giant linear magnetoresistances in three-dimensional Dirac semimetal Bi0.96Sb0.04 single crystals|Z. J. Yue,X. L. Wang,S. S. Yan###
(742425, 742428)
 An unusual magnetic-field induced semimetal-semiconductor phasetransition was observed in the Bi0.96Sb0.04 single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.04,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.96,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, 3, 'D', 4],[157.0, 3, 'D', 3],[79.0, 4, '%', 2],[74.0, 3, 'D', 2],[17.0, 8, 'T', 1],[42.0, 6000, '%', 1],[51.0, 5, 'K', 1],[56.0, 300, '%', 1],[65.0, 300, 'K', 1],[99.0, 200, 'K', 2],[126.0, 3, 'D', 3],[145.0, 3, 'D', 3]

In
###Semimetal-semiconductor transition and giant linear magnetoresistances in three-dimensional Dirac semimetal Bi0.96Sb0.04 single crystals|Z. J. Yue,X. L. Wang,S. S. Yan###
(742435, 742435)
 In a magneticfield of 8 T, Bi0.96Sb0.04 single crystals show giant magnetoresistances of upto 6000% at low-temperature, 5 K, and 300% at room-temperature, 300 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[196.0, 3, 'D', 5],[167.0, 3, 'D', 4],[89.0, 4, '%', 3],[84.0, 3, 'D', 3],[10.0, 8, 'T', 0],[35.0, 6000, '%', 0],[44.0, 5, 'K', 0],[49.0, 300, '%', 0],[58.0, 300, 'K', 0],[92.0, 200, 'K', 1],[119.0, 3, 'D', 2],[138.0, 3, 'D', 2]

Bi0.96Sb0.04
###Semimetal-semiconductor transition and giant linear magnetoresistances in three-dimensional Dirac semimetal Bi0.96Sb0.04 single crystals|Z. J. Yue,X. L. Wang,S. S. Yan###
(742448, 742451)
 In a magneticfield of 8 T, Bi0.96Sb0.04 single crystals show giant magnetoresistances of upto 6000% at low-temperature, 5 K, and 300% at room-temperature, 300 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.04,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.96,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[209.0, 3, 'D', 5],[180.0, 3, 'D', 4],[102.0, 4, '%', 3],[97.0, 3, 'D', 3],[3.0, 8, 'T', 0],[19.0, 6000, '%', 0],[28.0, 5, 'K', 0],[33.0, 300, '%', 0],[42.0, 300, 'K', 0],[76.0, 200, 'K', 1],[103.0, 3, 'D', 2],[122.0, 3, 'D', 2]

Fe
###Microscopic theory of the residual surface resistivity of Rashba electrons|Juba Bouaziz,Samir Lounis,Stefan Blügel,Hiroshi Ishida###
(742703, 742703)
 The behavior of thelongitudinal and transversal residual resistivity is computed for an Feimpurity at the Au(111) surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[345.0, 7, ',', 6]

In
###Microscopic theory of the residual surface resistivity of Rashba electrons|Juba Bouaziz,Samir Lounis,Stefan Blügel,Hiroshi Ishida###
(742949, 742949)
 In the limit of no spin-orbit interaction and anon-magnetic impurity of cylindrical symmetry, the expression of the residualresistivity of a two-dimensional electron-gas has the same simplicity and formas for the three-dimensional electron gas [J<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 7, ',', 2]

In
###Two-parameter scaling theory of the longitudinal magnetoconductivity in a Weyl metal phase: Chiral anomaly, weak disorder, and finite temperature|Kyoung-Min Kim,Dongwoo Shin,M. Sasaki,Heon-Jung Kim,Jeehoon Kim,Ki-Seok Kim###
(743179, 743179)
 In particular,chiral anomaly turns out to be the underlying mechanism for the negativelongitudinal magnetoresistivity in a Weyl metal phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(B)
###Two-parameter scaling theory of the longitudinal magnetoconductivity in a Weyl metal phase: Chiral anomaly, weak disorder, and finite temperature|Kyoung-Min Kim,Dongwoo Shin,M. Sasaki,Heon-Jung Kim,Jeehoon Kim,Ki-Seok Kim###
(743275, 743277)
 Existence of adissipationless current channel causes enhancement of electric currents alongthe direction of a pair of Weyl points or applied magnetic fields (B).
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Two-parameter scaling theory of the longitudinal magnetoconductivity in a Weyl metal phase: Chiral anomaly, weak disorder, and finite temperature|Kyoung-Min Kim,Dongwoo Shin,M. Sasaki,Heon-Jung Kim,Jeehoon Kim,Ki-Seok Kim###
(743518, 743518)
 As a result, we find breakdown of B/T<missing VAR> scaling, givenby B/T<missing VAR>1  eta with 0 < eta < 1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Two-parameter scaling theory of the longitudinal magnetoconductivity in a Weyl metal phase: Chiral anomaly, weak disorder, and finite temperature|Kyoung-Min Kim,Dongwoo Shin,M. Sasaki,Heon-Jung Kim,Jeehoon Kim,Ki-Seok Kim###
(743533, 743533)
 As a result, we find breakdown of B/T<missing VAR> scaling, givenby B/T<missing VAR>1  eta with 0 < eta < 1.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Two-parameter scaling theory of the longitudinal magnetoconductivity in a Weyl metal phase: Chiral anomaly, weak disorder, and finite temperature|Kyoung-Min Kim,Dongwoo Shin,M. Sasaki,Heon-Jung Kim,Jeehoon Kim,Ki-Seok Kim###
(743545, 743545)
 As a result, we find breakdown of B/T<missing VAR> scaling, givenby B/T<missing VAR>1  eta with 0 < eta < 1.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Gd3Ru4Al12
###Magnetic behavior of Gd3Ru4Al12, a layered compound with a distorted Kagome net|Venkatesh Chandragiri,Kartik K Iyer,E. V. Sampathkumaran###
(743629, 743634)
Magnetic behavior of Gd3Ru4Al12, a layered compound with a distorted Kagome net.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.631578947368421,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.21052631578947367,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15789473684210525,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[223.0, 18.5, 'K', 3],[239.0, 80, 'K', 3],[310.0, 55, 'K', 5],[522.0, 30, 'kOe', 9]

Gd3Ru4Al12
###Magnetic behavior of Gd3Ru4Al12, a layered compound with a distorted Kagome net|Venkatesh Chandragiri,Kartik K Iyer,E. V. Sampathkumaran###
(743667, 743672)
 The magnetic behavior of the compound, Gd3Ru4Al12, which has been reported tocrystallize in a hexagonal structure about two decades ago, had not beeninvestigated in the past literature despite interesting structural features(that is, magnetic layers and triangles as well as Kagome-lattice featuresfavouring frustrated magnetism) characterizing this compound.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.631578947368421,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.21052631578947367,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15789473684210525,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[185.0, 18.5, 'K', 2],[201.0, 80, 'K', 2],[272.0, 55, 'K', 4],[484.0, 30, 'kOe', 8]

K
###Magnetic behavior of Gd3Ru4Al12, a layered compound with a distorted Kagome net|Venkatesh Chandragiri,Kartik K Iyer,E. V. Sampathkumaran###
(743816, 743816)
 We report herethe results of magnetization, heat-capacity, and magnetoresistance studies inthe temperature (T) range 1.8-300 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 18.5, 'K', 1],[57.0, 80, 'K', 1],[128.0, 55, 'K', 3],[340.0, 30, 'kOe', 7]

N
###Magnetic behavior of Gd3Ru4Al12, a layered compound with a distorted Kagome net|Venkatesh Chandragiri,Kartik K Iyer,E. V. Sampathkumaran###
(743854, 743854)
 The results establish that there is along-range magnetic order of an antiferromagnetic type below (T<missing VAR>N ) 18.5 K,despite a much large value (about 80 K) of paramagnetic Curie temperature witha positive sign characteristic of ferromagnetic interaction.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 18.5, 'K', 0],[19.0, 80, 'K', 0],[90.0, 55, 'K', 2],[302.0, 30, 'kOe', 6]

N
###Magnetic behavior of Gd3Ru4Al12, a layered compound with a distorted Kagome net|Venkatesh Chandragiri,Kartik K Iyer,E. V. Sampathkumaran###
(744001, 744001)
 Concurrent with this observation,the sign of isothermal entropy change remains positive above T<missing VAR>N with a broadpeak above T<missing VAR>N.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 18.5, 'K', 3],[128.0, 80, 'K', 3],[57.0, 55, 'K', 1],[155.0, 30, 'kOe', 3]

N
###Magnetic behavior of Gd3Ru4Al12, a layered compound with a distorted Kagome net|Venkatesh Chandragiri,Kartik K Iyer,E. V. Sampathkumaran###
(744015, 744015)
 Concurrent with this observation,the sign of isothermal entropy change remains positive above T<missing VAR>N with a broadpeak above T<missing VAR>N.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 18.5, 'K', 3],[142.0, 80, 'K', 3],[71.0, 55, 'K', 1],[141.0, 30, 'kOe', 3]

H
###Magnetic behavior of Gd3Ru4Al12, a layered compound with a distorted Kagome net|Venkatesh Chandragiri,Kartik K Iyer,E. V. Sampathkumaran###
(744151, 744151)
 Thereis also a reversal of the sign of entropy-change in the curves for lower finalfields (for H less than 30 kOe) on entering into magnetically ordered stateconsistent with the entrance into antiferromagnetic state.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[294.0, 18.5, 'K', 6],[278.0, 80, 'K', 6],[207.0, 55, 'K', 4],[5.0, 30, 'kOe', 0]

Co
###Magnetoresistance of vertical Co-graphene-NiFe junctions controlled by charge transfer and proximity-induced spin splitting in graphene|P. U. Asshoff,J. L. Sambricio,A. P. Rooney,S. Slizovskiy,A. Mishchenko,A. M. Rakowski,E. W. Hill,A. K. Geim,S. J. Haigh,V. I. Fal'ko,I. J. Vera-Marun,I. V. Grigorieva###
(744219, 744219)
Magnetoresistance of vertical Co-graphene-NiFe junctions controlled by charge transfer and proximity-induced spin splitting in graphene.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[361.0, 1, 'to', 5]

NiFe
###Magnetoresistance of vertical Co-graphene-NiFe junctions controlled by charge transfer and proximity-induced spin splitting in graphene|P. U. Asshoff,J. L. Sambricio,A. P. Rooney,S. Slizovskiy,A. Mishchenko,A. M. Rakowski,E. W. Hill,A. K. Geim,S. J. Haigh,V. I. Fal'ko,I. J. Vera-Marun,I. V. Grigorieva###
(744223, 744224)
Magnetoresistance of vertical Co-graphene-NiFe junctions controlled by charge transfer and proximity-induced spin splitting in graphene.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[356.0, 1, 'to', 5]

F
###Magnetoresistance of vertical Co-graphene-NiFe junctions controlled by charge transfer and proximity-induced spin splitting in graphene|P. U. Asshoff,J. L. Sambricio,A. P. Rooney,S. Slizovskiy,A. Mishchenko,A. M. Rakowski,E. W. Hill,A. K. Geim,S. J. Haigh,V. I. Fal'ko,I. J. Vera-Marun,I. V. Grigorieva###
(744360, 744360)
 Another promising application of graphene is related to its use as aspacer separating ferromagnetic metals (FMs) in vertical magnetoresistivedevices, the most prominent class of spintronic devices widely used as magneticsensors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[220.0, 1, 'to', 3]

In
###Magnetoresistance of vertical Co-graphene-NiFe junctions controlled by charge transfer and proximity-induced spin splitting in graphene|P. U. Asshoff,J. L. Sambricio,A. P. Rooney,S. Slizovskiy,A. Mishchenko,A. M. Rakowski,E. W. Hill,A. K. Geim,S. J. Haigh,V. I. Fal'ko,I. J. Vera-Marun,I. V. Grigorieva###
(744400, 744400)
 In particular, few-layer graphene was predicted to act as a perfectspin filter.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[180.0, 1, 'to', 2]

F
###Magnetoresistance of vertical Co-graphene-NiFe junctions controlled by charge transfer and proximity-induced spin splitting in graphene|P. U. Asshoff,J. L. Sambricio,A. P. Rooney,S. Slizovskiy,A. Mishchenko,A. M. Rakowski,E. W. Hill,A. K. Geim,S. J. Haigh,V. I. Fal'ko,I. J. Vera-Marun,I. V. Grigorieva###
(744479, 744479)
 Here we show that the role of graphene in such devices (at leastin the absence of epitaxial alignment between graphene and the FMs) isdifferent and determined by proximity-induced spin splitting and chargetransfer with adjacent ferromagnetic metals, making graphene a weak FM<missing VAR>electrode rather than a spin filter.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 1, 'to', 1]

F
###Magnetoresistance of vertical Co-graphene-NiFe junctions controlled by charge transfer and proximity-induced spin splitting in graphene|P. U. Asshoff,J. L. Sambricio,A. P. Rooney,S. Slizovskiy,A. Mishchenko,A. M. Rakowski,E. W. Hill,A. K. Geim,S. J. Haigh,V. I. Fal'ko,I. J. Vera-Marun,I. V. Grigorieva###
(744526, 744526)
 Here we show that the role of graphene in such devices (at leastin the absence of epitaxial alignment between graphene and the FMs) isdifferent and determined by proximity-induced spin splitting and chargetransfer with adjacent ferromagnetic metals, making graphene a weak FM<missing VAR>electrode rather than a spin filter.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 1, 'to', 1]

Co
###Magnetoresistance of vertical Co-graphene-NiFe junctions controlled by charge transfer and proximity-induced spin splitting in graphene|P. U. Asshoff,J. L. Sambricio,A. P. Rooney,S. Slizovskiy,A. Mishchenko,A. M. Rakowski,E. W. Hill,A. K. Geim,S. J. Haigh,V. I. Fal'ko,I. J. Vera-Marun,I. V. Grigorieva###
(744570, 744570)
 To this end, we report observations ofmagnetoresistance (MR) in vertical Co-graphene-NiFe junctions with 1 to 4graphene layers separating the ferromagnets, and demonstrate that thedependence of the MR sign on the number of layers and its inversion atrelatively small bias voltages is consistent with spin transport between weaklydoped and differently spin-polarized layers of graphene.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 1, 'to', 0]

NiFe
###Magnetoresistance of vertical Co-graphene-NiFe junctions controlled by charge transfer and proximity-induced spin splitting in graphene|P. U. Asshoff,J. L. Sambricio,A. P. Rooney,S. Slizovskiy,A. Mishchenko,A. M. Rakowski,E. W. Hill,A. K. Geim,S. J. Haigh,V. I. Fal'ko,I. J. Vera-Marun,I. V. Grigorieva###
(744574, 744575)
 To this end, we report observations ofmagnetoresistance (MR) in vertical Co-graphene-NiFe junctions with 1 to 4graphene layers separating the ferromagnets, and demonstrate that thedependence of the MR sign on the number of layers and its inversion atrelatively small bias voltages is consistent with spin transport between weaklydoped and differently spin-polarized layers of graphene.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 1, 'to', 0]

Co
###Magnetoresistance of vertical Co-graphene-NiFe junctions controlled by charge transfer and proximity-induced spin splitting in graphene|P. U. Asshoff,J. L. Sambricio,A. P. Rooney,S. Slizovskiy,A. Mishchenko,A. M. Rakowski,E. W. Hill,A. K. Geim,S. J. Haigh,V. I. Fal'ko,I. J. Vera-Marun,I. V. Grigorieva###
(744708, 744708)
 The proposedinterpretation is supported by the observation of an MR sign reversal in biasedCo-graphene-h<missing VAR>BN-NiFe devices and by comprehensive structural characterization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 1, 'to', 1]

BN
###Magnetoresistance of vertical Co-graphene-NiFe junctions controlled by charge transfer and proximity-induced spin splitting in graphene|P. U. Asshoff,J. L. Sambricio,A. P. Rooney,S. Slizovskiy,A. Mishchenko,A. M. Rakowski,E. W. Hill,A. K. Geim,S. J. Haigh,V. I. Fal'ko,I. J. Vera-Marun,I. V. Grigorieva###
(744713, 744714)
 The proposedinterpretation is supported by the observation of an MR sign reversal in biasedCo-graphene-h<missing VAR>BN-NiFe devices and by comprehensive structural characterization.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 1, 'to', 1]

NiFe
###Magnetoresistance of vertical Co-graphene-NiFe junctions controlled by charge transfer and proximity-induced spin splitting in graphene|P. U. Asshoff,J. L. Sambricio,A. P. Rooney,S. Slizovskiy,A. Mishchenko,A. M. Rakowski,E. W. Hill,A. K. Geim,S. J. Haigh,V. I. Fal'ko,I. J. Vera-Marun,I. V. Grigorieva###
(744716, 744717)
 The proposedinterpretation is supported by the observation of an MR sign reversal in biasedCo-graphene-h<missing VAR>BN-NiFe devices and by comprehensive structural characterization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 1, 'to', 1]

ZrTe5
###Field induced topological phase transition from a three-dimensional Weyl semimetal to a two-dimensional massive Dirac metal in ZrTe5|Guolin Zheng,Xiangde Zhu,Yequn Liu,Jianwei Lu,Wei Ning,Hongwei Zhang,Wenshuai Gao,Yuyan Han,Jiyong Yang,Haifeng Du,Kun Yang,Yuheng Zhang,Mingliang Tian###
(744808, 744810)
Field induced topological phase transition from a three-dimensional Weyl semimetal to a two-dimensional massive Dirac metal in ZrTe5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 8, 'T', 2],[218.0, 8, 'T', 3],[262.0, 2, 'D', 3]

ZrTe5
###Field induced topological phase transition from a three-dimensional Weyl semimetal to a two-dimensional massive Dirac metal in ZrTe5|Guolin Zheng,Xiangde Zhu,Yequn Liu,Jianwei Lu,Wei Ning,Hongwei Zhang,Wenshuai Gao,Yuyan Han,Jiyong Yang,Haifeng Du,Kun Yang,Yuheng Zhang,Mingliang Tian###
(744920, 744922)
 Here we show that, due to thelarge Zeeman g<missing VAR> factor and small band width along b<missing VAR>-axis in Dirac semimetalZrTe5, a magnetic field of about 8 T along b<missing VAR>-axis direction may annihilate theWeyl points and open up a two-dimensional (2D) Dirac mass gap, when the Zeemansplitting exceeds the band width along b<missing VAR>-axis.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 8, 'T', 0],[106.0, 8, 'T', 1],[150.0, 2, 'D', 1]

ZrTe5
###Field induced topological phase transition from a three-dimensional Weyl semimetal to a two-dimensional massive Dirac metal in ZrTe5|Guolin Zheng,Xiangde Zhu,Yequn Liu,Jianwei Lu,Wei Ning,Hongwei Zhang,Wenshuai Gao,Yuyan Han,Jiyong Yang,Haifeng Du,Kun Yang,Yuheng Zhang,Mingliang Tian###
(745187, 745189)
Our experiment reveals a probable topological quantum phase transition of fieldinduced Weyl points annihilation in Dirac semimetal ZrTe5 and gives analternative explanation for the drop of MR at high field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[253.0, 8, 'T', 3],[159.0, 8, 'T', 2],[115.0, 2, 'D', 2]

II
###Magnetotransport properties of the type II Weyl semimetal candidate Ta3S2|D. Chen,L. X. Zhao,J. B. He,H. Liang,S. Zhang,C. H. Li,L. Shan,C. Ren,S. C. Wang,Z. A. Ren,G. F. Chen###
(745238, 745239)
Magnetotransport properties of the type II Weyl semimetal candidate Ta3S2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 8000, '%', 2],[101.0, 2, 'K', 2],[104.0, 16, 'T', 2]

Ta3S2
###Magnetotransport properties of the type II Weyl semimetal candidate Ta3S2|D. Chen,L. X. Zhao,J. B. He,H. Liang,S. Zhang,C. H. Li,L. Shan,C. Ren,S. C. Wang,Z. A. Ren,G. F. Chen###
(745247, 745250)
Magnetotransport properties of the type II Weyl semimetal candidate Ta3S2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 8000, '%', 2],[90.0, 2, 'K', 2],[93.0, 16, 'T', 2]

Ta3S2
###Magnetotransport properties of the type II Weyl semimetal candidate Ta3S2|D. Chen,L. X. Zhao,J. B. He,H. Liang,S. Zhang,C. H. Li,L. Shan,C. Ren,S. C. Wang,Z. A. Ren,G. F. Chen###
(745292, 745295)
 We have investigated the magnetoresistance (MR) and Hall resistivityproperties of the single crystals of tantalum sulfide, Ta3S2, which wasrecently predicted to be a new type II Weyl semimetal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 8000, '%', 1],[45.0, 2, 'K', 1],[48.0, 16, 'T', 1]

II
###Magnetotransport properties of the type II Weyl semimetal candidate Ta3S2|D. Chen,L. X. Zhao,J. B. He,H. Liang,S. Zhang,C. H. Li,L. Shan,C. Ren,S. C. Wang,Z. A. Ren,G. F. Chen###
(745317, 745318)
 We have investigated the magnetoresistance (MR) and Hall resistivityproperties of the single crystals of tantalum sulfide, Ta3S2, which wasrecently predicted to be a new type II Weyl semimetal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 8000, '%', 1],[22.0, 2, 'K', 1],[25.0, 16, 'T', 1]

B
###Magnetotransport properties of the type II Weyl semimetal candidate Ta3S2|D. Chen,L. X. Zhao,J. B. He,H. Liang,S. Zhang,C. H. Li,L. Shan,C. Ren,S. C. Wang,Z. A. Ren,G. F. Chen###
(745443, 745443)
 For the field applied along the b<missing VAR>-axis (B//b),MR exhibits quadratic field dependence at low fields and tends towardssaturation at high fields; while for B//a, MR presents quadratic fielddependence at low fields and becomes linear at high fields without any trendtowards saturation.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 8000, '%', 2],[103.0, 2, 'K', 2],[100.0, 16, 'T', 2]

B
###Magnetotransport properties of the type II Weyl semimetal candidate Ta3S2|D. Chen,L. X. Zhao,J. B. He,H. Liang,S. Zhang,C. H. Li,L. Shan,C. Ren,S. C. Wang,Z. A. Ren,G. F. Chen###
(745488, 745488)
 For the field applied along the b<missing VAR>-axis (B//b),MR exhibits quadratic field dependence at low fields and tends towardssaturation at high fields; while for B//a, MR presents quadratic fielddependence at low fields and becomes linear at high fields without any trendtowards saturation.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 8000, '%', 2],[148.0, 2, 'K', 2],[145.0, 16, 'T', 2]

H
###Magnetotransport properties of the type II Weyl semimetal candidate Ta3S2|D. Chen,L. X. Zhao,J. B. He,H. Liang,S. Zhang,C. H. Li,L. Shan,C. Ren,S. C. Wang,Z. A. Ren,G. F. Chen###
(745603, 745603)
 Shubnikov-de Haas (SdH) oscillation analysisreveals three fundamental frequencies originated from the three-dimensional(3D) Fermi surface (FS) pockets.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[268.0, 8000, '%', 4],[263.0, 2, 'K', 4],[260.0, 16, 'T', 4]

(FS)
###Magnetotransport properties of the type II Weyl semimetal candidate Ta3S2|D. Chen,L. X. Zhao,J. B. He,H. Liang,S. Zhang,C. H. Li,L. Shan,C. Ren,S. C. Wang,Z. A. Ren,G. F. Chen###
(745639, 745642)
 Shubnikov-de Haas (SdH) oscillation analysisreveals three fundamental frequencies originated from the three-dimensional(3D) Fermi surface (FS) pockets.
Featurization successful!
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[304.0, 8000, '%', 4],[299.0, 2, 'K', 4],[296.0, 16, 'T', 4]

Ta3S2
###Magnetotransport properties of the type II Weyl semimetal candidate Ta3S2|D. Chen,L. X. Zhao,J. B. He,H. Liang,S. Zhang,C. H. Li,L. Shan,C. Ren,S. C. Wang,Z. A. Ren,G. F. Chen###
(745685, 745688)
 We find that the semi-classical multibandmodel is sufficient to account for the experimentally observed MR in Ta3S2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[350.0, 8000, '%', 5],[345.0, 2, 'K', 5],[342.0, 16, 'T', 5]

W
###The Spin Nernst effect in Tungsten|Peng Sheng,Yuya Sakuraba,Yong-Chang Lau,Saburo Takahashi,Seiji Mitani,Masamitsu Hayashi###
(745840, 745840)
 Here we report theobservation of the spin Nernst effect in W.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###The Spin Nernst effect in Tungsten|Peng Sheng,Yuya Sakuraba,Yong-Chang Lau,Saburo Takahashi,Seiji Mitani,Masamitsu Hayashi###
(745843, 745843)
 In W/CoFeB/MgO heterostructures, wefind changes in the longitudinal and transverse voltages with magnetic fieldwhen temperature gradient is applied across the film.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W/CoFeB/MgO
###The Spin Nernst effect in Tungsten|Peng Sheng,Yuya Sakuraba,Yong-Chang Lau,Saburo Takahashi,Seiji Mitani,Masamitsu Hayashi###
(745845, 745852)
 In W/CoFeB/MgO heterostructures, wefind changes in the longitudinal and transverse voltages with magnetic fieldwhen temperature gradient is applied across the film.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

W
###The Spin Nernst effect in Tungsten|Peng Sheng,Yuya Sakuraba,Yong-Chang Lau,Saburo Takahashi,Seiji Mitani,Masamitsu Hayashi###
(745988, 745988)
 We find the spin Nernstangle of W to be similar in magnitude but opposite in sign with its spin Hallangle.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nb
###Different approaches to generate matching effects using arrays in contact with superconducting films|J. del Valle,A. Gomez,J. Luis- Hita,V. Rollano,E. M. Gonzalez,J. L. Vicent###
(746256, 746256)
 The superconducting samplesare Nb films grown on Si substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Different approaches to generate matching effects using arrays in contact with superconducting films|J. del Valle,A. Gomez,J. Luis- Hita,V. Rollano,E. M. Gonzalez,J. L. Vicent###
(746264, 746264)
 The superconducting samplesare Nb films grown on Si substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nb
###Different approaches to generate matching effects using arrays in contact with superconducting films|J. del Valle,A. Gomez,J. Luis- Hita,V. Rollano,E. M. Gonzalez,J. L. Vicent###
(746301, 746301)
 We have studied these matching effectswith the array on top, embedded or threading the Nb superconducting films andusing different materials (Si, Cu, Ni, Py dots and dots fabricated with Co/Pdmultilayers).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Different approaches to generate matching effects using arrays in contact with superconducting films|J. del Valle,A. Gomez,J. Luis- Hita,V. Rollano,E. M. Gonzalez,J. L. Vicent###
(746317, 746317)
 We have studied these matching effectswith the array on top, embedded or threading the Nb superconducting films andusing different materials (Si, Cu, Ni, Py dots and dots fabricated with Co/Pdmultilayers).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Different approaches to generate matching effects using arrays in contact with superconducting films|J. del Valle,A. Gomez,J. Luis- Hita,V. Rollano,E. M. Gonzalez,J. L. Vicent###
(746320, 746320)
 We have studied these matching effectswith the array on top, embedded or threading the Nb superconducting films andusing different materials (Si, Cu, Ni, Py dots and dots fabricated with Co/Pdmultilayers).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Different approaches to generate matching effects using arrays in contact with superconducting films|J. del Valle,A. Gomez,J. Luis- Hita,V. Rollano,E. M. Gonzalez,J. L. Vicent###
(746323, 746323)
 We have studied these matching effectswith the array on top, embedded or threading the Nb superconducting films andusing different materials (Si, Cu, Ni, Py dots and dots fabricated with Co/Pdmultilayers).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co/Pd
###Different approaches to generate matching effects using arrays in contact with superconducting films|J. del Valle,A. Gomez,J. Luis- Hita,V. Rollano,E. M. Gonzalez,J. L. Vicent###
(746338, 746340)
 We have studied these matching effectswith the array on top, embedded or threading the Nb superconducting films andusing different materials (Si, Cu, Ni, Py dots and dots fabricated with Co/Pdmultilayers).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

In
###Different approaches to generate matching effects using arrays in contact with superconducting films|J. del Valle,A. Gomez,J. Luis- Hita,V. Rollano,E. M. Gonzalez,J. L. Vicent###
(746482, 746482)
 The main findings are i) Periodicroughness induced in the superconducting film is enough to generate resistivityminima; ii) A minor effect is achieved by magnetic pinning from periodicmagnetic field potentials obtained by dots with out of plane magnetizationgrown on top of the superconducting film, iii) In the case of array of magneticdots embedded in the films vortex flow probes the magnetic state; i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Different approaches to generate matching effects using arrays in contact with superconducting films|J. del Valle,A. Gomez,J. Luis- Hita,V. Rollano,E. M. Gonzalez,J. L. Vicent###
(746548, 746548)
 In addition, we have studied the role played by the local order inthe commensurability effects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Weiss oscillations and particle-hole symmetry at the half-filled Landau level|Alfred K. C. Cheung,S. Raghu,Michael Mulligan###
(746820, 746820)
 At fixed electron density, theoscillation minima are asymmetrically biased towards higher magnetic fields,while at fixed magnetic field, the oscillations occur symmetrically as theelectron density is varied about half-filling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Weiss oscillations and particle-hole symmetry at the half-filled Landau level|Alfred K. C. Cheung,S. Raghu,Michael Mulligan###
(746970, 746970)
 The locations of the magnetoresistance oscillation minima for thecomposite fermion theory of Halperin, Lee, and Read (HLR) and its particle-holeconjugate agree exactly.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Weiss oscillations and particle-hole symmetry at the half-filled Landau level|Alfred K. C. Cheung,S. Raghu,Michael Mulligan###
(747036, 747036)
 Within the current experimental resolution, thelocations of the oscillation minima produced by the Dirac composite fermioncoincide with those of HLR.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Microscopic theory for radiation-induced Zero-Resistance States in 2D electron systems: Franck-Condon blockade|Jesus Inarrea###
(747348, 747348)
 As a result, it takes place adrastic suppression of the scattering probability and then current andmagnetoresistance exponentially drop.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[248.0, 2, 'D', 5]

MoSe2
###Millimeter-scale layered MoSe2 grown on sapphire and evidence for negative magnetoresistance|M. T. Dau,C. Vergnaud,A. Marty,F. Rortais,C. Beigné,H. Boukari,E. Bellet-Amalric,V. Guigoz,O. Renault,C. Alvarez,H. Okuno,P. Pochet,M. Jamet###
(747484, 747486)
Millimeter-scale layered MoSe2 grown on sapphire and evidence for negative magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 2, 'on', 1],[88.0, 2, 'grows', 2],[130.0, 2, 'exhibits', 3],[323.0, 108, ',', 10]

MoSe
###Millimeter-scale layered MoSe2 grown on sapphire and evidence for negative magnetoresistance|M. T. Dau,C. Vergnaud,A. Marty,F. Rortais,C. Beigné,H. Boukari,E. Bellet-Amalric,V. Guigoz,O. Renault,C. Alvarez,H. Okuno,P. Pochet,M. Jamet###
(747538, 747539)
 Molecular beam epitaxy technique has been used to deposit a single layer anda bilayer of MoSe 2 on sapphire.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[1.0, 2, 'on', 0],[35.0, 2, 'grows', 1],[77.0, 2, 'exhibits', 2],[270.0, 108, ',', 9]

MoSe
###Millimeter-scale layered MoSe2 grown on sapphire and evidence for negative magnetoresistance|M. T. Dau,C. Vergnaud,A. Marty,F. Rortais,C. Beigné,H. Boukari,E. Bellet-Amalric,V. Guigoz,O. Renault,C. Alvarez,H. Okuno,P. Pochet,M. Jamet###
(747572, 747573)
 Extensive characterizations including in-situand ex-situ measurements show that the layered MoSe 2 grows in a scalablemanner on the substrate and reveals characteristics of a stoichiometric2H-phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 2, 'on', 1],[1.0, 2, 'grows', 0],[43.0, 2, 'exhibits', 1],[236.0, 108, ',', 8]

H
###Millimeter-scale layered MoSe2 grown on sapphire and evidence for negative magnetoresistance|M. T. Dau,C. Vergnaud,A. Marty,F. Rortais,C. Beigné,H. Boukari,E. Bellet-Amalric,V. Guigoz,O. Renault,C. Alvarez,H. Okuno,P. Pochet,M. Jamet###
(747605, 747605)
 Extensive characterizations including in-situand ex-situ measurements show that the layered MoSe 2 grows in a scalablemanner on the substrate and reveals characteristics of a stoichiometric2H-phase.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 2, 'on', 1],[31.0, 2, 'grows', 0],[11.0, 2, 'exhibits', 1],[204.0, 108, ',', 8]

MoSe
###Millimeter-scale layered MoSe2 grown on sapphire and evidence for negative magnetoresistance|M. T. Dau,C. Vergnaud,A. Marty,F. Rortais,C. Beigné,H. Boukari,E. Bellet-Amalric,V. Guigoz,O. Renault,C. Alvarez,H. Okuno,P. Pochet,M. Jamet###
(747614, 747615)
 The layered MoSe 2 exhibits polycrystalline features with domainsseparated by defects and boundaries.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 2, 'on', 2],[40.0, 2, 'grows', 1],[1.0, 2, 'exhibits', 0],[194.0, 108, ',', 7]

MoSe
###Millimeter-scale layered MoSe2 grown on sapphire and evidence for negative magnetoresistance|M. T. Dau,C. Vergnaud,A. Marty,F. Rortais,C. Beigné,H. Boukari,E. Bellet-Amalric,V. Guigoz,O. Renault,C. Alvarez,H. Okuno,P. Pochet,M. Jamet###
(747733, 747734)
 Moreover, a negativemagnetoresistance was observed, stressing a fascinating feature of the chargetransport under the application of a magnetic field in the layered MoSe 2system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[193.0, 2, 'on', 4],[159.0, 2, 'grows', 3],[117.0, 2, 'exhibits', 2],[75.0, 108, ',', 5]

WS2
###Millimeter-scale layered MoSe2 grown on sapphire and evidence for negative magnetoresistance|M. T. Dau,C. Vergnaud,A. Marty,F. Rortais,C. Beigné,H. Boukari,E. Bellet-Amalric,V. Guigoz,O. Renault,C. Alvarez,H. Okuno,P. Pochet,M. Jamet###
(747776, 747778)
 This negative magnetoresistance observed at millimeter-scale is similarto that observed recently at room temperature inWS2 flakes at a micrometerscale [Zhang et al.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[236.0, 2, 'on', 5],[202.0, 2, 'grows', 4],[160.0, 2, 'exhibits', 3],[31.0, 108, ',', 4]

WTe2
###Gate Tunable Magneto-resistance of Ultra-Thin WTe2 Devices|Xin Liu,Zhiran Zhang,Chaoyi Cai,Shibing Tian,Satya Kushwaha,Hong Lu,Takashi Taniguchi,Kenji Watanabe,Robert J. Cava,Shuang Jia,Jian-Hao Chen###
(747891, 747893)
Gate Tunable Magneto-resistance of Ultra-Thin WTe2 Devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[192.0, 400, ',', 5],[194.0, 0, '%', 5],[250.0, 167, ',', 5]

In
###Gate Tunable Magneto-resistance of Ultra-Thin WTe2 Devices|Xin Liu,Zhiran Zhang,Chaoyi Cai,Shibing Tian,Satya Kushwaha,Hong Lu,Takashi Taniguchi,Kenji Watanabe,Robert J. Cava,Shuang Jia,Jian-Hao Chen###
(747898, 747898)
 In this work, the magneto-resistance (MR) of ultra-thin WTe2/BNheterostructures far away from electron-hole equilibrium is measured.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[187.0, 400, ',', 4],[189.0, 0, '%', 4],[245.0, 167, ',', 4]

WTe2/BN
###Gate Tunable Magneto-resistance of Ultra-Thin WTe2 Devices|Xin Liu,Zhiran Zhang,Chaoyi Cai,Shibing Tian,Satya Kushwaha,Hong Lu,Takashi Taniguchi,Kenji Watanabe,Robert J. Cava,Shuang Jia,Jian-Hao Chen###
(747922, 747927)
 In this work, the magneto-resistance (MR) of ultra-thin WTe2/BNheterostructures far away from electron-hole equilibrium is measured.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[158.0, 400, ',', 4],[160.0, 0, '%', 4],[216.0, 167, ',', 4]

WTe2
###Gate Tunable Magneto-resistance of Ultra-Thin WTe2 Devices|Xin Liu,Zhiran Zhang,Chaoyi Cai,Shibing Tian,Satya Kushwaha,Hong Lu,Takashi Taniguchi,Kenji Watanabe,Robert J. Cava,Shuang Jia,Jian-Hao Chen###
(748032, 748034)
 Wealso found that the magnetoresistive behavior of ultra-thin WTe2 devices iswell-captured by a two-fluid model.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 400, ',', 1],[53.0, 0, '%', 1],[109.0, 167, ',', 1]

V
###Gate Tunable Magneto-resistance of Ultra-Thin WTe2 Devices|Xin Liu,Zhiran Zhang,Chaoyi Cai,Shibing Tian,Satya Kushwaha,Hong Lu,Takashi Taniguchi,Kenji Watanabe,Robert J. Cava,Shuang Jia,Jian-Hao Chen###
(748149, 748149)
 According to the model, the change of MRcould be as large as 400,000%, the largest potential change of MR among allmaterials known, if the ultra-thin samples are tuned to neutrality whenpreserving the mobility of 167,000 cm2V-1s<missing VAR>-1 observed in bulk samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 400, ',', 0],[62.0, 0, '%', 0],[6.0, 167, ',', 0]

WTe2
###Gate Tunable Magneto-resistance of Ultra-Thin WTe2 Devices|Xin Liu,Zhiran Zhang,Chaoyi Cai,Shibing Tian,Satya Kushwaha,Hong Lu,Takashi Taniguchi,Kenji Watanabe,Robert J. Cava,Shuang Jia,Jian-Hao Chen###
(748182, 748184)
 Ourfindings show the prospects of ultra-thin WTe2 as a variable magnetoresistancematerial in future applications such as magnetic field sensors, informationstorage and extraction devices, and galvanic isolators.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 400, ',', 1],[95.0, 0, '%', 1],[39.0, 167, ',', 1]

WTe2
###Gate Tunable Magneto-resistance of Ultra-Thin WTe2 Devices|Xin Liu,Zhiran Zhang,Chaoyi Cai,Shibing Tian,Satya Kushwaha,Hong Lu,Takashi Taniguchi,Kenji Watanabe,Robert J. Cava,Shuang Jia,Jian-Hao Chen###
(748276, 748278)
 The results alsoprovide important insight into the electronic structure and the origin of thelarge MR in ultra-thin WTe2 samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[191.0, 400, ',', 2],[189.0, 0, '%', 2],[133.0, 167, ',', 2]

In
###Electric-field-induced extremely large change in resistance in graphene ferromagnets|Yu Song###
(748424, 748424)
 In this work, wepropose a device that can generate even larger changes in resistance in azero-magnetic field and at a high temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 3, '%', 2],[77.0, 6, '%', 2],[195.0, 6, '%', 2],[202.0, 3, '%', 2]

YI
###Electric-field-induced extremely large change in resistance in graphene ferromagnets|Yu Song###
(748508, 748509)
 The device is composed of agraphene under two strips of yttrium iron garnet (YIG), where two gate voltagesare applied to cancel the heavy charge doping in the YIG<missing VAR>-induced half-metallicferromagnets.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[182.0, 3, '%', 3],[161.0, 6, '%', 3],[110.0, 6, '%', 1],[117.0, 3, '%', 1]

YI
###Electric-field-induced extremely large change in resistance in graphene ferromagnets|Yu Song###
(748543, 748544)
 The device is composed of agraphene under two strips of yttrium iron garnet (YIG), where two gate voltagesare applied to cancel the heavy charge doping in the YIG<missing VAR>-induced half-metallicferromagnets.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[217.0, 3, '%', 3],[196.0, 6, '%', 3],[75.0, 6, '%', 1],[82.0, 3, '%', 1]

B
###Electric-field-induced extremely large change in resistance in graphene ferromagnets|Yu Song###
(748567, 748567)
 By calculations using the Landauer-Bu<missing VAR>ttiker formalism, wedemonstrate that, when a proper gate voltage is applied on the freeferromagnet, changes in resistance up to 305times106% (16times103%)can be achieved at the liquid helium (nitrogen) temperature and in a zeromagnetic field.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[241.0, 3, '%', 4],[220.0, 6, '%', 4],[52.0, 6, '%', 0],[59.0, 3, '%', 0]

EuO
###Electric-field-induced extremely large change in resistance in graphene ferromagnets|Yu Song###
(748768, 748769)
 We also find that, theproposed effect can be realized in devices using other magnetic insulators suchas EuO and EuS.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[442.0, 3, '%', 6],[421.0, 6, '%', 6],[149.0, 6, '%', 2],[142.0, 3, '%', 2]

EuS
###Electric-field-induced extremely large change in resistance in graphene ferromagnets|Yu Song###
(748773, 748774)
 We also find that, theproposed effect can be realized in devices using other magnetic insulators suchas EuO and EuS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[447.0, 3, '%', 6],[426.0, 6, '%', 6],[154.0, 6, '%', 2],[147.0, 3, '%', 2]

C
###Electric-field-induced extremely large change in resistance in graphene ferromagnets|Yu Song###
(748810, 748810)
 Our work should be helpful for developing a realistic switchingdevice that is energy saving and CM<missing VAR>OS-technology compatible.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[484.0, 3, '%', 7],[463.0, 6, '%', 7],[191.0, 6, '%', 3],[184.0, 3, '%', 3]

OS
###Electric-field-induced extremely large change in resistance in graphene ferromagnets|Yu Song###
(748812, 748813)
 Our work should be helpful for developing a realistic switchingdevice that is energy saving and CM<missing VAR>OS-technology compatible.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[486.0, 3, '%', 7],[465.0, 6, '%', 7],[193.0, 6, '%', 3],[186.0, 3, '%', 3]

I
###Tailoring tricolor structure of magnetic topological insulator for robust axion insulator|M. Mogi,M. Kawamura,A. Tsukazaki,R. Yoshimi,K. S. Takahashi,M. Kawasaki,Y. Tokura###
(748957, 748957)
 Amagnetic heterostructure of topological insulator (T<missing VAR>I) hosts such an exoticmagnetoelectric coupling and can be expected to realize the TME effect as anaxion insulator.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[274.0, 10, ',', 3],[276.0, 0, ',', 3],[278.0, 0, '%', 3]

I
###Tailoring tricolor structure of magnetic topological insulator for robust axion insulator|M. Mogi,M. Kawamura,A. Tsukazaki,R. Yoshimi,K. S. Takahashi,M. Kawasaki,Y. Tokura###
(749014, 749014)
 Here we designed a magnetic T<missing VAR>I with tricolor structure where anon-magnetic layer of (Bi, Sb)2Te3 is sandwiched by a soft ferromagneticCr-doped (Bi, Sb)2Te3 and a hard ferromagnetic V-doped (Bi, Sb)2Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[217.0, 10, ',', 2],[219.0, 0, ',', 2],[221.0, 0, '%', 2]

Bi
###Tailoring tricolor structure of magnetic topological insulator for robust axion insulator|M. Mogi,M. Kawamura,A. Tsukazaki,R. Yoshimi,K. S. Takahashi,M. Kawasaki,Y. Tokura###
(749036, 749036)
 Here we designed a magnetic T<missing VAR>I with tricolor structure where anon-magnetic layer of (Bi, Sb)2Te3 is sandwiched by a soft ferromagneticCr-doped (Bi, Sb)2Te3 and a hard ferromagnetic V-doped (Bi, Sb)2Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[195.0, 10, ',', 2],[197.0, 0, ',', 2],[199.0, 0, '%', 2]

Sb
###Tailoring tricolor structure of magnetic topological insulator for robust axion insulator|M. Mogi,M. Kawamura,A. Tsukazaki,R. Yoshimi,K. S. Takahashi,M. Kawasaki,Y. Tokura###
(749039, 749039)
 Here we designed a magnetic T<missing VAR>I with tricolor structure where anon-magnetic layer of (Bi, Sb)2Te3 is sandwiched by a soft ferromagneticCr-doped (Bi, Sb)2Te3 and a hard ferromagnetic V-doped (Bi, Sb)2Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[192.0, 10, ',', 2],[194.0, 0, ',', 2],[196.0, 0, '%', 2]

Te3
###Tailoring tricolor structure of magnetic topological insulator for robust axion insulator|M. Mogi,M. Kawamura,A. Tsukazaki,R. Yoshimi,K. S. Takahashi,M. Kawasaki,Y. Tokura###
(749042, 749043)
 Here we designed a magnetic T<missing VAR>I with tricolor structure where anon-magnetic layer of (Bi, Sb)2Te3 is sandwiched by a soft ferromagneticCr-doped (Bi, Sb)2Te3 and a hard ferromagnetic V-doped (Bi, Sb)2Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 10, ',', 2],[190.0, 0, ',', 2],[192.0, 0, '%', 2]

Cr
###Tailoring tricolor structure of magnetic topological insulator for robust axion insulator|M. Mogi,M. Kawamura,A. Tsukazaki,R. Yoshimi,K. S. Takahashi,M. Kawasaki,Y. Tokura###
(749058, 749058)
 Here we designed a magnetic T<missing VAR>I with tricolor structure where anon-magnetic layer of (Bi, Sb)2Te3 is sandwiched by a soft ferromagneticCr-doped (Bi, Sb)2Te3 and a hard ferromagnetic V-doped (Bi, Sb)2Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 10, ',', 2],[175.0, 0, ',', 2],[177.0, 0, '%', 2]

Bi
###Tailoring tricolor structure of magnetic topological insulator for robust axion insulator|M. Mogi,M. Kawamura,A. Tsukazaki,R. Yoshimi,K. S. Takahashi,M. Kawasaki,Y. Tokura###
(749063, 749063)
 Here we designed a magnetic T<missing VAR>I with tricolor structure where anon-magnetic layer of (Bi, Sb)2Te3 is sandwiched by a soft ferromagneticCr-doped (Bi, Sb)2Te3 and a hard ferromagnetic V-doped (Bi, Sb)2Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[168.0, 10, ',', 2],[170.0, 0, ',', 2],[172.0, 0, '%', 2]

Sb
###Tailoring tricolor structure of magnetic topological insulator for robust axion insulator|M. Mogi,M. Kawamura,A. Tsukazaki,R. Yoshimi,K. S. Takahashi,M. Kawasaki,Y. Tokura###
(749066, 749066)
 Here we designed a magnetic T<missing VAR>I with tricolor structure where anon-magnetic layer of (Bi, Sb)2Te3 is sandwiched by a soft ferromagneticCr-doped (Bi, Sb)2Te3 and a hard ferromagnetic V-doped (Bi, Sb)2Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 10, ',', 2],[167.0, 0, ',', 2],[169.0, 0, '%', 2]

Te3
###Tailoring tricolor structure of magnetic topological insulator for robust axion insulator|M. Mogi,M. Kawamura,A. Tsukazaki,R. Yoshimi,K. S. Takahashi,M. Kawasaki,Y. Tokura###
(749069, 749070)
 Here we designed a magnetic T<missing VAR>I with tricolor structure where anon-magnetic layer of (Bi, Sb)2Te3 is sandwiched by a soft ferromagneticCr-doped (Bi, Sb)2Te3 and a hard ferromagnetic V-doped (Bi, Sb)2Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 10, ',', 2],[163.0, 0, ',', 2],[165.0, 0, '%', 2]

V
###Tailoring tricolor structure of magnetic topological insulator for robust axion insulator|M. Mogi,M. Kawamura,A. Tsukazaki,R. Yoshimi,K. S. Takahashi,M. Kawasaki,Y. Tokura###
(749080, 749080)
 Here we designed a magnetic T<missing VAR>I with tricolor structure where anon-magnetic layer of (Bi, Sb)2Te3 is sandwiched by a soft ferromagneticCr-doped (Bi, Sb)2Te3 and a hard ferromagnetic V-doped (Bi, Sb)2Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 10, ',', 2],[153.0, 0, ',', 2],[155.0, 0, '%', 2]

Bi
###Tailoring tricolor structure of magnetic topological insulator for robust axion insulator|M. Mogi,M. Kawamura,A. Tsukazaki,R. Yoshimi,K. S. Takahashi,M. Kawasaki,Y. Tokura###
(749085, 749085)
 Here we designed a magnetic T<missing VAR>I with tricolor structure where anon-magnetic layer of (Bi, Sb)2Te3 is sandwiched by a soft ferromagneticCr-doped (Bi, Sb)2Te3 and a hard ferromagnetic V-doped (Bi, Sb)2Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 10, ',', 2],[148.0, 0, ',', 2],[150.0, 0, '%', 2]

Sb
###Tailoring tricolor structure of magnetic topological insulator for robust axion insulator|M. Mogi,M. Kawamura,A. Tsukazaki,R. Yoshimi,K. S. Takahashi,M. Kawasaki,Y. Tokura###
(749088, 749088)
 Here we designed a magnetic T<missing VAR>I with tricolor structure where anon-magnetic layer of (Bi, Sb)2Te3 is sandwiched by a soft ferromagneticCr-doped (Bi, Sb)2Te3 and a hard ferromagnetic V-doped (Bi, Sb)2Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 10, ',', 2],[145.0, 0, ',', 2],[147.0, 0, '%', 2]

Te3
###Tailoring tricolor structure of magnetic topological insulator for robust axion insulator|M. Mogi,M. Kawamura,A. Tsukazaki,R. Yoshimi,K. S. Takahashi,M. Kawasaki,Y. Tokura###
(749091, 749092)
 Here we designed a magnetic T<missing VAR>I with tricolor structure where anon-magnetic layer of (Bi, Sb)2Te3 is sandwiched by a soft ferromagneticCr-doped (Bi, Sb)2Te3 and a hard ferromagnetic V-doped (Bi, Sb)2Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 10, ',', 2],[141.0, 0, ',', 2],[143.0, 0, '%', 2]

H
###Tailoring tricolor structure of magnetic topological insulator for robust axion insulator|M. Mogi,M. Kawamura,A. Tsukazaki,R. Yoshimi,K. S. Takahashi,M. Kawasaki,Y. Tokura###
(749111, 749111)
Accompanied by the quantum anomalous Hall (Q<missing VAR>AH) effect, we observe zero Hallconductivity plateaus, which are a hallmark of the axion insulator state, in awide range of magnetic field between the coercive fields of Cr- and V-dopedlayers.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 10, ',', 1],[122.0, 0, ',', 1],[124.0, 0, '%', 1]

Cr
###Tailoring tricolor structure of magnetic topological insulator for robust axion insulator|M. Mogi,M. Kawamura,A. Tsukazaki,R. Yoshimi,K. S. Takahashi,M. Kawasaki,Y. Tokura###
(749175, 749175)
Accompanied by the quantum anomalous Hall (Q<missing VAR>AH) effect, we observe zero Hallconductivity plateaus, which are a hallmark of the axion insulator state, in awide range of magnetic field between the coercive fields of Cr- and V-dopedlayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 10, ',', 1],[58.0, 0, ',', 1],[60.0, 0, '%', 1]

V
###Tailoring tricolor structure of magnetic topological insulator for robust axion insulator|M. Mogi,M. Kawamura,A. Tsukazaki,R. Yoshimi,K. S. Takahashi,M. Kawasaki,Y. Tokura###
(749180, 749180)
Accompanied by the quantum anomalous Hall (Q<missing VAR>AH) effect, we observe zero Hallconductivity plateaus, which are a hallmark of the axion insulator state, in awide range of magnetic field between the coercive fields of Cr- and V-dopedlayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 10, ',', 1],[53.0, 0, ',', 1],[55.0, 0, '%', 1]

H
###Tailoring tricolor structure of magnetic topological insulator for robust axion insulator|M. Mogi,M. Kawamura,A. Tsukazaki,R. Yoshimi,K. S. Takahashi,M. Kawasaki,Y. Tokura###
(749251, 749251)
 The resistance of the axion insulator state reaches as high as 109ohm, leading to a gigantic magnetoresistance ratio exceeding 10,000,000% uponthe transition from the Q<missing VAR>AH state.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 10, ',', 0],[18.0, 0, ',', 0],[16.0, 0, '%', 0]

I
###Tailoring tricolor structure of magnetic topological insulator for robust axion insulator|M. Mogi,M. Kawamura,A. Tsukazaki,R. Yoshimi,K. S. Takahashi,M. Kawasaki,Y. Tokura###
(749265, 749265)
 The tricolor structure of T<missing VAR>I may not only bean ideal arena for the topologically distinct phenomena, but also providemagnetoresistive applications for advancing dissipationless topologicalelectronics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 10, ',', 1],[32.0, 0, ',', 1],[30.0, 0, '%', 1]

N
###Large magnetoresistance dips and perfect spin-valley filter induced by topological phase transitions in silicene|Worasak Prarokijjak,Bumned Soodchomshom###
(749376, 749376)
 Spin-valley transport and magnetoresistance are investigated insilicene-based N/T<missing VAR>B/N/T<missing VAR>B/N junction where N and T<missing VAR>B are normal silicene andtopological barriers.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B/N
###Large magnetoresistance dips and perfect spin-valley filter induced by topological phase transitions in silicene|Worasak Prarokijjak,Bumned Soodchomshom###
(749379, 749381)
 Spin-valley transport and magnetoresistance are investigated insilicene-based N/T<missing VAR>B/N/T<missing VAR>B/N junction where N and T<missing VAR>B are normal silicene andtopological barriers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

B/N
###Large magnetoresistance dips and perfect spin-valley filter induced by topological phase transitions in silicene|Worasak Prarokijjak,Bumned Soodchomshom###
(749384, 749386)
 Spin-valley transport and magnetoresistance are investigated insilicene-based N/T<missing VAR>B/N/T<missing VAR>B/N junction where N and T<missing VAR>B are normal silicene andtopological barriers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

N
###Large magnetoresistance dips and perfect spin-valley filter induced by topological phase transitions in silicene|Worasak Prarokijjak,Bumned Soodchomshom###
(749392, 749392)
 Spin-valley transport and magnetoresistance are investigated insilicene-based N/T<missing VAR>B/N/T<missing VAR>B/N junction where N and T<missing VAR>B are normal silicene andtopological barriers.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Large magnetoresistance dips and perfect spin-valley filter induced by topological phase transitions in silicene|Worasak Prarokijjak,Bumned Soodchomshom###
(749397, 749397)
 Spin-valley transport and magnetoresistance are investigated insilicene-based N/T<missing VAR>B/N/T<missing VAR>B/N junction where N and T<missing VAR>B are normal silicene andtopological barriers.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Large magnetoresistance dips and perfect spin-valley filter induced by topological phase transitions in silicene|Worasak Prarokijjak,Bumned Soodchomshom###
(749450, 749450)
 As a result, wefind that by applying electric and exchange fields, four groups of spin-valleycurrents are perfectly filtered, directly induced by topological phasetransitions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeRh/MgO/Cu
###Giant tunnel magnetoresistance with a single magnetic phase-transition electrode|Jia Zhang,X. Z. Chen,C. Song,J. F. Feng,H. X. Wei,Jing-Tao Lü###
(749907, 749913)
 The calculations show that the MPT-TMR of FeRh/MgO/Cu tunneljunction can be as high as hundreds of percent when the magnetic structure ofFeRh changes from G<missing VAR>-type antiferromagnetic (G<missing VAR>AFM) to ferromagnetic order.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

FeRh
###Giant tunnel magnetoresistance with a single magnetic phase-transition electrode|Jia Zhang,X. Z. Chen,C. Song,J. F. Feng,H. X. Wei,Jing-Tao Lü###
(749947, 749948)
 The calculations show that the MPT-TMR of FeRh/MgO/Cu tunneljunction can be as high as hundreds of percent when the magnetic structure ofFeRh changes from G<missing VAR>-type antiferromagnetic (G<missing VAR>AFM) to ferromagnetic order.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Giant tunnel magnetoresistance with a single magnetic phase-transition electrode|Jia Zhang,X. Z. Chen,C. Song,J. F. Feng,H. X. Wei,Jing-Tao Lü###
(749963, 749963)
 The calculations show that the MPT-TMR of FeRh/MgO/Cu tunneljunction can be as high as hundreds of percent when the magnetic structure ofFeRh changes from G<missing VAR>-type antiferromagnetic (G<missing VAR>AFM) to ferromagnetic order.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Giant tunnel magnetoresistance with a single magnetic phase-transition electrode|Jia Zhang,X. Z. Chen,C. Song,J. F. Feng,H. X. Wei,Jing-Tao Lü###
(750077, 750077)
 The main mechanism for the giant MPT-TMR can be attributed to theformation of interface resonant states at G<missing VAR>AFM<missing VAR>-FeRh/MgO interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeRh/MgO
###Giant tunnel magnetoresistance with a single magnetic phase-transition electrode|Jia Zhang,X. Z. Chen,C. Song,J. F. Feng,H. X. Wei,Jing-Tao Lü###
(750080, 750084)
 The main mechanism for the giant MPT-TMR can be attributed to theformation of interface resonant states at G<missing VAR>AFM<missing VAR>-FeRh/MgO interface.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

FeRh/MgO
###Giant tunnel magnetoresistance with a single magnetic phase-transition electrode|Jia Zhang,X. Z. Chen,C. Song,J. F. Feng,H. X. Wei,Jing-Tao Lü###
(750094, 750098)
 A directFeRh/MgO interface is found to be necessary for achieving high MPT-TMRexperimentally.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

FeRh/MgO
###Giant tunnel magnetoresistance with a single magnetic phase-transition electrode|Jia Zhang,X. Z. Chen,C. Song,J. F. Feng,H. X. Wei,Jing-Tao Lü###
(750139, 750143)
 Moreover, we find the FeRh/MgO interface with FeRh inferromagnetic phase has nearly full spin-polarization due to the negligiblemajority transmission and significantly different Fermi surface of two spinchannels.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

FeRh
###Giant tunnel magnetoresistance with a single magnetic phase-transition electrode|Jia Zhang,X. Z. Chen,C. Song,J. F. Feng,H. X. Wei,Jing-Tao Lü###
(750149, 750150)
 Moreover, we find the FeRh/MgO interface with FeRh inferromagnetic phase has nearly full spin-polarization due to the negligiblemajority transmission and significantly different Fermi surface of two spinchannels.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Giant tunnel magnetoresistance with a single magnetic phase-transition electrode|Jia Zhang,X. Z. Chen,C. Song,J. F. Feng,H. X. Wei,Jing-Tao Lü###
(750228, 750228)
 Inaddition, electric field driven MPT of FeRh-based hetero-magneticnanostructures can be utilized to design various energy efficient tunneljunction structures and the corresponding lower power consumption devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeRh
###Giant tunnel magnetoresistance with a single magnetic phase-transition electrode|Jia Zhang,X. Z. Chen,C. Song,J. F. Feng,H. X. Wei,Jing-Tao Lü###
(750246, 750247)
 Inaddition, electric field driven MPT of FeRh-based hetero-magneticnanostructures can be utilized to design various energy efficient tunneljunction structures and the corresponding lower power consumption devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeRh
###Giant tunnel magnetoresistance with a single magnetic phase-transition electrode|Jia Zhang,X. Z. Chen,C. Song,J. F. Feng,H. X. Wei,Jing-Tao Lü###
(750332, 750333)
 Ourresults will stimulate further experimental investigations of MPT-TMR and otherfascinating phenomenon of FeRh-based tunnel junctions that may be promising inantiferromagnetic spintronics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Transversal magnetoresistance and Shubnikov-de Haas oscillations in Weyl semimetals|J. Klier,I. V. Gornyi,A. D. Mirlin###
(750631, 750631)
 In the experimentallymost relevant case of Coulomb impurities, we find in this model a large TMR ina broad range of quantizing magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Transversal magnetoresistance and Shubnikov-de Haas oscillations in Weyl semimetals|J. Klier,I. V. Gornyi,A. D. Mirlin###
(750739, 750739)
 In the regime of moderate (but still quantizing)magnetic fields, where the higher Landau levels are relevant, the rapidlygrowing TMR is supplemented by strong Shubnikov-de Haas oscillations,consistent with experimental observations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Quantum Oscillations and Magnetoresistance in Type-II Weyl Semimetals - Effect of a Field Induced Charge Density Wave|Maximilian Trescher,Emil J. Bergholtz,Johannes Knolle###
(750836, 750837)
Quantum Oscillations and Magnetoresistance in Type-II Weyl Semimetals - Effect of a Field Induced Charge Density Wave.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Quantum Oscillations and Magnetoresistance in Type-II Weyl Semimetals - Effect of a Field Induced Charge Density Wave|Maximilian Trescher,Emil J. Bergholtz,Johannes Knolle###
(750870, 750871)
 Recent experiments on type-II Weyl semimetals such as WTe2, MoTe2,Mox<missing VAR>W1-xTe2 and WP2 reveal remarkable transport properties inpresence of a strong magnetic field, including an extremely largemagnetoresistance and an unusual temperature dependence.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Quantum Oscillations and Magnetoresistance in Type-II Weyl Semimetals - Effect of a Field Induced Charge Density Wave|Maximilian Trescher,Emil J. Bergholtz,Johannes Knolle###
(750881, 750883)
 Recent experiments on type-II Weyl semimetals such as WTe2, MoTe2,Mox<missing VAR>W1-xTe2 and WP2 reveal remarkable transport properties inpresence of a strong magnetic field, including an extremely largemagnetoresistance and an unusual temperature dependence.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoTe2
###Quantum Oscillations and Magnetoresistance in Type-II Weyl Semimetals - Effect of a Field Induced Charge Density Wave|Maximilian Trescher,Emil J. Bergholtz,Johannes Knolle###
(750886, 750888)
 Recent experiments on type-II Weyl semimetals such as WTe2, MoTe2,Mox<missing VAR>W1-xTe2 and WP2 reveal remarkable transport properties inpresence of a strong magnetic field, including an extremely largemagnetoresistance and an unusual temperature dependence.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mo
###Quantum Oscillations and Magnetoresistance in Type-II Weyl Semimetals - Effect of a Field Induced Charge Density Wave|Maximilian Trescher,Emil J. Bergholtz,Johannes Knolle###
(750892, 750892)
 Recent experiments on type-II Weyl semimetals such as WTe2, MoTe2,Mox<missing VAR>W1-xTe2 and WP2 reveal remarkable transport properties inpresence of a strong magnetic field, including an extremely largemagnetoresistance and an unusual temperature dependence.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W1-xTe2
###Quantum Oscillations and Magnetoresistance in Type-II Weyl Semimetals - Effect of a Field Induced Charge Density Wave|Maximilian Trescher,Emil J. Bergholtz,Johannes Knolle###
(750894, 750899)
 Recent experiments on type-II Weyl semimetals such as WTe2, MoTe2,Mox<missing VAR>W1-xTe2 and WP2 reveal remarkable transport properties inpresence of a strong magnetic field, including an extremely largemagnetoresistance and an unusual temperature dependence.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

WP2
###Quantum Oscillations and Magnetoresistance in Type-II Weyl Semimetals - Effect of a Field Induced Charge Density Wave|Maximilian Trescher,Emil J. Bergholtz,Johannes Knolle###
(750903, 750905)
 Recent experiments on type-II Weyl semimetals such as WTe2, MoTe2,Mox<missing VAR>W1-xTe2 and WP2 reveal remarkable transport properties inpresence of a strong magnetic field, including an extremely largemagnetoresistance and an unusual temperature dependence.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Quantum Oscillations and Magnetoresistance in Type-II Weyl Semimetals - Effect of a Field Induced Charge Density Wave|Maximilian Trescher,Emil J. Bergholtz,Johannes Knolle###
(750985, 750986)
 Here, we investigatemagnetotransport via the Kubo formula in a minimal model of a type-II Weylsemimetal taking into account the effect of a charge density wave (CD<missing VAR>W)transition, which can arise even at weak coupling in the presence of a strongmagnetic field because of the special Landau level dispersion of type-II Weylsystems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Quantum Oscillations and Magnetoresistance in Type-II Weyl Semimetals - Effect of a Field Induced Charge Density Wave|Maximilian Trescher,Emil J. Bergholtz,Johannes Knolle###
(751014, 751014)
 Here, we investigatemagnetotransport via the Kubo formula in a minimal model of a type-II Weylsemimetal taking into account the effect of a charge density wave (CD<missing VAR>W)transition, which can arise even at weak coupling in the presence of a strongmagnetic field because of the special Landau level dispersion of type-II Weylsystems.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Quantum Oscillations and Magnetoresistance in Type-II Weyl Semimetals - Effect of a Field Induced Charge Density Wave|Maximilian Trescher,Emil J. Bergholtz,Johannes Knolle###
(751016, 751016)
 Here, we investigatemagnetotransport via the Kubo formula in a minimal model of a type-II Weylsemimetal taking into account the effect of a charge density wave (CD<missing VAR>W)transition, which can arise even at weak coupling in the presence of a strongmagnetic field because of the special Landau level dispersion of type-II Weylsystems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Quantum Oscillations and Magnetoresistance in Type-II Weyl Semimetals - Effect of a Field Induced Charge Density Wave|Maximilian Trescher,Emil J. Bergholtz,Johannes Knolle###
(751072, 751073)
 Here, we investigatemagnetotransport via the Kubo formula in a minimal model of a type-II Weylsemimetal taking into account the effect of a charge density wave (CD<missing VAR>W)transition, which can arise even at weak coupling in the presence of a strongmagnetic field because of the special Landau level dispersion of type-II Weylsystems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B2
###Quantum Oscillations and Magnetoresistance in Type-II Weyl Semimetals - Effect of a Field Induced Charge Density Wave|Maximilian Trescher,Emil J. Bergholtz,Johannes Knolle###
(751108, 751109)
 Consistent with experimental measurements we find an extremely largemagnetoresistance with close to B2 scaling at particle-hole compensation,while in the extreme quantum limit there is a transition to a qualitatively newscaling with approximately B0.75.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B0.75
###Quantum Oscillations and Magnetoresistance in Type-II Weyl Semimetals - Effect of a Field Induced Charge Density Wave|Maximilian Trescher,Emil J. Bergholtz,Johannes Knolle###
(751158, 751159)
 Consistent with experimental measurements we find an extremely largemagnetoresistance with close to B2 scaling at particle-hole compensation,while in the extreme quantum limit there is a transition to a qualitatively newscaling with approximately B0.75.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Quantum Oscillations and Magnetoresistance in Type-II Weyl Semimetals - Effect of a Field Induced Charge Density Wave|Maximilian Trescher,Emil J. Bergholtz,Johannes Knolle###
(751210, 751210)
 We also investigate the Shubnikov-deHaas effect and find that the amplitude of the resistivity quantum oscillationsare greatly enhanced below the CD<missing VAR>W transition temperature which is accompaniedby an unusual non-monotonous (non-Lifshitz-Kosevich) temperature dependence.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Quantum Oscillations and Magnetoresistance in Type-II Weyl Semimetals - Effect of a Field Induced Charge Density Wave|Maximilian Trescher,Emil J. Bergholtz,Johannes Knolle###
(751212, 751212)
 We also investigate the Shubnikov-deHaas effect and find that the amplitude of the resistivity quantum oscillationsare greatly enhanced below the CD<missing VAR>W transition temperature which is accompaniedby an unusual non-monotonous (non-Lifshitz-Kosevich) temperature dependence.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Engineering and improving the magnetic properties of thin Fe layers through exchange coupling with hard magnetic Dysprosium layers|M. Ehlert,H. S. Körner,T. Hupfauer,M. Schitko,G. Bayreuther,D. Weiss###
(751272, 751272)
Engineering and improving the magnetic properties of thin Fe layers through exchange coupling with hard magnetic Dysprosium layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 120, 'K', 1]

Fe
###Engineering and improving the magnetic properties of thin Fe layers through exchange coupling with hard magnetic Dysprosium layers|M. Ehlert,H. S. Körner,T. Hupfauer,M. Schitko,G. Bayreuther,D. Weiss###
(751320, 751320)
 We report on a comprehensive study of the magnetic coupling between softmagnetic Fe layers and hard magnetic Dysprosium (Dy) layers at low temperatures(4.2 - 120K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 120, 'K', 0]

(Dy)
###Engineering and improving the magnetic properties of thin Fe layers through exchange coupling with hard magnetic Dysprosium layers|M. Ehlert,H. S. Körner,T. Hupfauer,M. Schitko,G. Bayreuther,D. Weiss###
(751332, 751334)
 We report on a comprehensive study of the magnetic coupling between softmagnetic Fe layers and hard magnetic Dysprosium (Dy) layers at low temperatures(4.2 - 120K).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 120, 'K', 0]

Fe
###Engineering and improving the magnetic properties of thin Fe layers through exchange coupling with hard magnetic Dysprosium layers|M. Ehlert,H. S. Körner,T. Hupfauer,M. Schitko,G. Bayreuther,D. Weiss###
(751369, 751369)
 For our experiments we prepared thin films of Fe and Dy andmultilayers of Fe/Dy by ultra-high vacuum sputtering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 120, 'K', 1]

Dy
###Engineering and improving the magnetic properties of thin Fe layers through exchange coupling with hard magnetic Dysprosium layers|M. Ehlert,H. S. Körner,T. Hupfauer,M. Schitko,G. Bayreuther,D. Weiss###
(751373, 751373)
 For our experiments we prepared thin films of Fe and Dy andmultilayers of Fe/Dy by ultra-high vacuum sputtering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 120, 'K', 1]

Fe/Dy
###Engineering and improving the magnetic properties of thin Fe layers through exchange coupling with hard magnetic Dysprosium layers|M. Ehlert,H. S. Körner,T. Hupfauer,M. Schitko,G. Bayreuther,D. Weiss###
(751382, 751384)
 For our experiments we prepared thin films of Fe and Dy andmultilayers of Fe/Dy by ultra-high vacuum sputtering.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[33.0, 120, 'K', 1]

Fe
###Engineering and improving the magnetic properties of thin Fe layers through exchange coupling with hard magnetic Dysprosium layers|M. Ehlert,H. S. Körner,T. Hupfauer,M. Schitko,G. Bayreuther,D. Weiss###
(751507, 751507)
 Byanalyzing and comparing the corresponding data of Fe and Dy, we show that thepresence of a Dy layer on top of the Fe layer significantly influences itsmagnetic properties and makes it magnetically harder.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 120, 'K', 4]

Dy
###Engineering and improving the magnetic properties of thin Fe layers through exchange coupling with hard magnetic Dysprosium layers|M. Ehlert,H. S. Körner,T. Hupfauer,M. Schitko,G. Bayreuther,D. Weiss###
(751511, 751511)
 Byanalyzing and comparing the corresponding data of Fe and Dy, we show that thepresence of a Dy layer on top of the Fe layer significantly influences itsmagnetic properties and makes it magnetically harder.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 120, 'K', 4]

Dy
###Engineering and improving the magnetic properties of thin Fe layers through exchange coupling with hard magnetic Dysprosium layers|M. Ehlert,H. S. Körner,T. Hupfauer,M. Schitko,G. Bayreuther,D. Weiss###
(751529, 751529)
 Byanalyzing and comparing the corresponding data of Fe and Dy, we show that thepresence of a Dy layer on top of the Fe layer significantly influences itsmagnetic properties and makes it magnetically harder.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[180.0, 120, 'K', 4]

Fe
###Engineering and improving the magnetic properties of thin Fe layers through exchange coupling with hard magnetic Dysprosium layers|M. Ehlert,H. S. Körner,T. Hupfauer,M. Schitko,G. Bayreuther,D. Weiss###
(751541, 751541)
 Byanalyzing and comparing the corresponding data of Fe and Dy, we show that thepresence of a Dy layer on top of the Fe layer significantly influences itsmagnetic properties and makes it magnetically harder.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[192.0, 120, 'K', 4]

Fe
###Engineering and improving the magnetic properties of thin Fe layers through exchange coupling with hard magnetic Dysprosium layers|M. Ehlert,H. S. Körner,T. Hupfauer,M. Schitko,G. Bayreuther,D. Weiss###
(751645, 751645)
 All experimental results can consistentlybe explained with exchange coupling at the interface between the Fe and the Dylayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[296.0, 120, 'K', 6]

Dy
###Engineering and improving the magnetic properties of thin Fe layers through exchange coupling with hard magnetic Dysprosium layers|M. Ehlert,H. S. Körner,T. Hupfauer,M. Schitko,G. Bayreuther,D. Weiss###
(751651, 751651)
 All experimental results can consistentlybe explained with exchange coupling at the interface between the Fe and the Dylayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[302.0, 120, 'K', 6]

Dy
###Engineering and improving the magnetic properties of thin Fe layers through exchange coupling with hard magnetic Dysprosium layers|M. Ehlert,H. S. Körner,T. Hupfauer,M. Schitko,G. Bayreuther,D. Weiss###
(751685, 751685)
 Our experiments also yield a negative sign of the AMR effect of thin Dyfilms, and an increase of the Dy films Curie temperature, which is due togrowth conditions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[336.0, 120, 'K', 7]

Dy
###Engineering and improving the magnetic properties of thin Fe layers through exchange coupling with hard magnetic Dysprosium layers|M. Ehlert,H. S. Körner,T. Hupfauer,M. Schitko,G. Bayreuther,D. Weiss###
(751701, 751701)
 Our experiments also yield a negative sign of the AMR effect of thin Dyfilms, and an increase of the Dy films Curie temperature, which is due togrowth conditions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[352.0, 120, 'K', 7]

C
###Spin colossal magnetoresistance in an antiferromagnetic insulator|Zhiyong Qiu,Dazhi Hou,Joseph Barker,Kei Yamamoto,Olena Gomonay,Eiji Saitoh###
(751752, 751752)
 Colossal magnetoresistance (CMR) refers to a large change in electricalconductivity induced by a magnetic field in the vicinity of a metal-insulatortransition and has inspired extensive studies for decadesciteRamirez1997,Tokura2006.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 1997, ',', 0],[231.0, 14, 'K', 3]

N
###Spin colossal magnetoresistance in an antiferromagnetic insulator|Zhiyong Qiu,Dazhi Hou,Joseph Barker,Kei Yamamoto,Olena Gomonay,Eiji Saitoh###
(751842, 751842)
 Here we demonstrate an analogous spin effect near the Neeltemperature T<missing VAR>rmN296 K of the antiferromagnetic insulator CrO.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 1997, ',', 1],[141.0, 14, 'K', 2]

N296
###Spin colossal magnetoresistance in an antiferromagnetic insulator|Zhiyong Qiu,Dazhi Hou,Joseph Barker,Kei Yamamoto,Olena Gomonay,Eiji Saitoh###
(751850, 751851)
 Here we demonstrate an analogous spin effect near the Neeltemperature T<missing VAR>rmN296 K of the antiferromagnetic insulator CrO.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 1997, ',', 1],[132.0, 14, 'K', 2]

K
###Spin colossal magnetoresistance in an antiferromagnetic insulator|Zhiyong Qiu,Dazhi Hou,Joseph Barker,Kei Yamamoto,Olena Gomonay,Eiji Saitoh###
(751853, 751853)
 Here we demonstrate an analogous spin effect near the Neeltemperature T<missing VAR>rmN296 K of the antiferromagnetic insulator CrO.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 1997, ',', 1],[130.0, 14, 'K', 2]

CrO
###Spin colossal magnetoresistance in an antiferromagnetic insulator|Zhiyong Qiu,Dazhi Hou,Joseph Barker,Kei Yamamoto,Olena Gomonay,Eiji Saitoh###
(751863, 751864)
 Here we demonstrate an analogous spin effect near the Neeltemperature T<missing VAR>rmN296 K of the antiferromagnetic insulator CrO.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 1997, ',', 1],[119.0, 14, 'K', 2]

YI
###Spin colossal magnetoresistance in an antiferromagnetic insulator|Zhiyong Qiu,Dazhi Hou,Joseph Barker,Kei Yamamoto,Olena Gomonay,Eiji Saitoh###
(751878, 751879)
 Using ayttrium iron garnet YIG<missing VAR>/CrO/Pt trilayer, we injected a spin current from theYIG<missing VAR> into the CrO layer, and collected via the inverse spin Hall effect thesignal transmitted in the heavy metal Pt.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 1997, ',', 2],[104.0, 14, 'K', 1]

CrO/Pt
###Spin colossal magnetoresistance in an antiferromagnetic insulator|Zhiyong Qiu,Dazhi Hou,Joseph Barker,Kei Yamamoto,Olena Gomonay,Eiji Saitoh###
(751882, 751885)
 Using ayttrium iron garnet YIG<missing VAR>/CrO/Pt trilayer, we injected a spin current from theYIG<missing VAR> into the CrO layer, and collected via the inverse spin Hall effect thesignal transmitted in the heavy metal Pt.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[66.0, 1997, ',', 2],[98.0, 14, 'K', 1]

YI
###Spin colossal magnetoresistance in an antiferromagnetic insulator|Zhiyong Qiu,Dazhi Hou,Joseph Barker,Kei Yamamoto,Olena Gomonay,Eiji Saitoh###
(751905, 751906)
 Using ayttrium iron garnet YIG<missing VAR>/CrO/Pt trilayer, we injected a spin current from theYIG<missing VAR> into the CrO layer, and collected via the inverse spin Hall effect thesignal transmitted in the heavy metal Pt.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 1997, ',', 2],[77.0, 14, 'K', 1]

CrO
###Spin colossal magnetoresistance in an antiferromagnetic insulator|Zhiyong Qiu,Dazhi Hou,Joseph Barker,Kei Yamamoto,Olena Gomonay,Eiji Saitoh###
(751913, 751914)
 Using ayttrium iron garnet YIG<missing VAR>/CrO/Pt trilayer, we injected a spin current from theYIG<missing VAR> into the CrO layer, and collected via the inverse spin Hall effect thesignal transmitted in the heavy metal Pt.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 1997, ',', 2],[69.0, 14, 'K', 1]

Pt
###Spin colossal magnetoresistance in an antiferromagnetic insulator|Zhiyong Qiu,Dazhi Hou,Joseph Barker,Kei Yamamoto,Olena Gomonay,Eiji Saitoh###
(751950, 751950)
 Using ayttrium iron garnet YIG<missing VAR>/CrO/Pt trilayer, we injected a spin current from theYIG<missing VAR> into the CrO layer, and collected via the inverse spin Hall effect thesignal transmitted in the heavy metal Pt.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 1997, ',', 2],[33.0, 14, 'K', 1]

N
###Spin colossal magnetoresistance in an antiferromagnetic insulator|Zhiyong Qiu,Dazhi Hou,Joseph Barker,Kei Yamamoto,Olena Gomonay,Eiji Saitoh###
(751989, 751989)
 We observed a change by two orders ofmagnitude in the transmitted spin current within 14 K of the Neeltemperature.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 1997, ',', 3],[6.0, 14, 'K', 0]

SC
###Spin colossal magnetoresistance in an antiferromagnetic insulator|Zhiyong Qiu,Dazhi Hou,Joseph Barker,Kei Yamamoto,Olena Gomonay,Eiji Saitoh###
(752055, 752056)
 Thiseffect, that we term spin colossal magnetoresistance (SCMR), has the potentialto simplify the design of fundamental spintronics components, for instanceenabling the realization of spin current switches or spin-current basedmemories.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[239.0, 1997, ',', 5],[72.0, 14, 'K', 2]

SI
###Collapse of the Cooper pair phase coherence length at a superconductor to insulator transition|S. M. Hollen,G. E. Fernandes,J. M. Xu,J. M. Valles Jr###
(752173, 752174)
 We present investigations of the superconductor to insulator transition (SIT)of uniform a-Bi films using a technique sensitive to Cooper pair phasecoherence.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi
###Collapse of the Cooper pair phase coherence length at a superconductor to insulator transition|S. M. Hollen,G. E. Fernandes,J. M. Xu,J. M. Valles Jr###
(752185, 752185)
 We present investigations of the superconductor to insulator transition (SIT)of uniform a-Bi films using a technique sensitive to Cooper pair phasecoherence.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SI
###Collapse of the Cooper pair phase coherence length at a superconductor to insulator transition|S. M. Hollen,G. E. Fernandes,J. M. Xu,J. M. Valles Jr###
(752274, 752275)
Film magnetoresistances on the superconducting side of the SIT<missing VAR> oscillate with aperiod dictated by the superconducting flux quantum and the areal hole density.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SI
###Collapse of the Cooper pair phase coherence length at a superconductor to insulator transition|S. M. Hollen,G. E. Fernandes,J. M. Xu,J. M. Valles Jr###
(752323, 752324)
The oscillations disappear close to the SIT<missing VAR> critical point to leave amonotonically rising magnetoresistance that persists in the insulating phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SI
###Collapse of the Cooper pair phase coherence length at a superconductor to insulator transition|S. M. Hollen,G. E. Fernandes,J. M. Xu,J. M. Valles Jr###
(752418, 752419)
These observations indicate that the Cooper pair phase coherence length, whichis infinite in the superconducting phase, collapses to a value less than theinterhole spacing at this SIT<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SI
###Collapse of the Cooper pair phase coherence length at a superconductor to insulator transition|S. M. Hollen,G. E. Fernandes,J. M. Xu,J. M. Valles Jr###
(752466, 752467)
 This behavior is inconsistent with the gradualreduction of the phase coherence length expected for a bosonic, phasefluctuation driven SIT<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SI
###Collapse of the Cooper pair phase coherence length at a superconductor to insulator transition|S. M. Hollen,G. E. Fernandes,J. M. Xu,J. M. Valles Jr###
(752534, 752535)
 This result starkly contrasts with previousobservations of oscillations persisting in the insulating phase of other filmsimplying that there must be at least two distinct classes of disorder tunedSITs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Asymmetric scattering of Dirac electrons and holes in graphene|Atikur Rahman,Janice Wynn Guikema,Nina Markovic###
(752932, 752932)
At larger carrier densities, the amplitude of the noise depends strongly on thesign of the impurity charge, reflecting the fact that the electrons and theholes are scattered by the impurity potential in an asymmetric manner.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Tunable excitonic insulator in quantum limit graphite|Z. Zhu,R. D. McDonald,A. Shekhter,B. J. Ramshaw,K. A. Modic,F. F. Balakirev,N. Harrison###
(753347, 753347)
 We find that themaximum transition temperature TEI of the excitonic phase is coincident with aband gap opening in the underlying electronic structure at B0 46 /- 1 T,which is evidenced above TEI by a thermally broadened inflection point in themagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 1, 'T', 0]

B0
###Tunable excitonic insulator in quantum limit graphite|Z. Zhu,R. D. McDonald,A. Shekhter,B. J. Ramshaw,K. A. Modic,F. F. Balakirev,N. Harrison###
(753384, 753385)
 We find that themaximum transition temperature TEI of the excitonic phase is coincident with aband gap opening in the underlying electronic structure at B0 46 /- 1 T,which is evidenced above TEI by a thermally broadened inflection point in themagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 1, 'T', 0]

I
###Tunable excitonic insulator in quantum limit graphite|Z. Zhu,R. D. McDonald,A. Shekhter,B. J. Ramshaw,K. A. Modic,F. F. Balakirev,N. Harrison###
(753405, 753405)
 We find that themaximum transition temperature TEI of the excitonic phase is coincident with aband gap opening in the underlying electronic structure at B0 46 /- 1 T,which is evidenced above TEI by a thermally broadened inflection point in themagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 1, 'T', 0]

B0
###Tunable excitonic insulator in quantum limit graphite|Z. Zhu,R. D. McDonald,A. Shekhter,B. J. Ramshaw,K. A. Modic,F. F. Balakirev,N. Harrison###
(753446, 753447)
 The overall asymmetry of the observed phase boundary aroundB0 closely matches theoretical predictions of a magnetic field-tuned excitonicinsulator phase in which the opening of a band gap marks a crossover frompredominantly momentum-space pairing to real-space pairing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 1, 'T', 1]

In
###Spin-resolved Andreev transport through double-quantum-dot Cooper pair splitters|Piotr Trocha,Ireneusz Weymann###
(753681, 753681)
 In particular, we analyze thespin-resolved transport in the crossed Andreev reflection regime, where ablockade of the current occurs due to enhanced occupation of the triplet state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Topological end states in two-orbital double-exchange model for colossal magnetoresistive manganites|Yang Li,Shuai Dong,Su-Peng Kou###
(754141, 754141)
 Manganites are famous mostly for the colossal magnetoresistive effect, whichinvolves the phase separation between ferromagnetic phase and charge-orderedCE<missing VAR>-type antiferromagnetic phases.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[307.0, 6, ',', 9]

HoMnO3
###Topological end states in two-orbital double-exchange model for colossal magnetoresistive manganites|Yang Li,Shuai Dong,Su-Peng Kou###
(754181, 754184)
 E<missing VAR>-type antiferromagnetic o<missing VAR>-HoMnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[264.0, 6, ',', 7]

C
###Topological end states in two-orbital double-exchange model for colossal magnetoresistive manganites|Yang Li,Shuai Dong,Su-Peng Kou###
(754207, 754207)
 Here were-examined these zigzag-winding antiferromagnetic phases (CE<missing VAR>-type and E<missing VAR>-typeantiferromagnets) from the topological perspective.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[241.0, 6, ',', 6]

In
###Topological end states in two-orbital double-exchange model for colossal magnetoresistive manganites|Yang Li,Shuai Dong,Su-Peng Kou###
(754273, 754273)
 In momentum space, we classify the symmetries of thisphase, and find the three symmetry operators for the chiral, particle-hole, andtime-reversal symmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 6, ',', 4]

C
###Topological end states in two-orbital double-exchange model for colossal magnetoresistive manganites|Yang Li,Shuai Dong,Su-Peng Kou###
(754332, 754332)
 The CE<missing VAR>-type phase can be described by theDuffin-Kemmer-Petiau algebra, implying that it is a new class of topologicalinsulator and hence extends the existing classification.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 6, ',', 3]

In
###Sample Size Effects on the Transport Characteristics of Mesoscopic Graphite Samples|J. Barzola-Quiquia,J. -L. Yao,P. Rödiger,K. Schindler,P. Esquinazi###
(754513, 754513)
 In this work we investigated correlations between the internal microstructureand sample size (lateral as well as thickness) of mesoscopic, tens of nanometerthick graphite (multigraphene) samples and the temperature (T) and field(B) dependence of their electrical resistivity rho(T<missing VAR>,B).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[495.0, 1, ',', 6],[510.0, 2, 'K', 6]

(B)
###Sample Size Effects on the Transport Characteristics of Mesoscopic Graphite Samples|J. Barzola-Quiquia,J. -L. Yao,P. Rödiger,K. Schindler,P. Esquinazi###
(754589, 754591)
 In this work we investigated correlations between the internal microstructureand sample size (lateral as well as thickness) of mesoscopic, tens of nanometerthick graphite (multigraphene) samples and the temperature (T) and field(B) dependence of their electrical resistivity rho(T<missing VAR>,B).
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[417.0, 1, ',', 6],[432.0, 2, 'K', 6]

B
###Sample Size Effects on the Transport Characteristics of Mesoscopic Graphite Samples|J. Barzola-Quiquia,J. -L. Yao,P. Rödiger,K. Schindler,P. Esquinazi###
(754607, 754607)
 In this work we investigated correlations between the internal microstructureand sample size (lateral as well as thickness) of mesoscopic, tens of nanometerthick graphite (multigraphene) samples and the temperature (T) and field(B) dependence of their electrical resistivity rho(T<missing VAR>,B).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[401.0, 1, ',', 6],[416.0, 2, 'K', 6]

B
###Sample Size Effects on the Transport Characteristics of Mesoscopic Graphite Samples|J. Barzola-Quiquia,J. -L. Yao,P. Rödiger,K. Schindler,P. Esquinazi###
(754744, 754744)
 We found a qualitative and quantitative change in thebehavior of rho(T<missing VAR>,B) upon thickness of the multigraphene samples, indicatingthat their internal microstructure is important.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[264.0, 1, ',', 4],[279.0, 2, 'K', 4]

(B)
###Sample Size Effects on the Transport Characteristics of Mesoscopic Graphite Samples|J. Barzola-Quiquia,J. -L. Yao,P. Rödiger,K. Schindler,P. Esquinazi###
(754964, 754966)
 The magnetoresistance of the multigraphenesamples shows a scaling of the form ((R<missing VAR>(B) - R<missing VAR>(0))/R<missing VAR>(0))/T<missing VAR>alpha  f<missing VAR>(B/T)with a sample dependent exponent alpha sim 1, which applies in the wholetemperature 2 K le T<missing VAR> le 270K and magnetic field range B le 8 T<missing VAR>.
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 1, ',', 0],[57.0, 2, 'K', 0]

B
###Sample Size Effects on the Transport Characteristics of Mesoscopic Graphite Samples|J. Barzola-Quiquia,J. -L. Yao,P. Rödiger,K. Schindler,P. Esquinazi###
(754988, 754988)
 The magnetoresistance of the multigraphenesamples shows a scaling of the form ((R<missing VAR>(B) - R<missing VAR>(0))/R<missing VAR>(0))/T<missing VAR>alpha  f<missing VAR>(B/T)with a sample dependent exponent alpha sim 1, which applies in the wholetemperature 2 K le T<missing VAR> le 270K and magnetic field range B le 8 T<missing VAR>.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 1, ',', 0],[35.0, 2, 'K', 0]

K
###Sample Size Effects on the Transport Characteristics of Mesoscopic Graphite Samples|J. Barzola-Quiquia,J. -L. Yao,P. Rödiger,K. Schindler,P. Esquinazi###
(755032, 755032)
 The magnetoresistance of the multigraphenesamples shows a scaling of the form ((R<missing VAR>(B) - R<missing VAR>(0))/R<missing VAR>(0))/T<missing VAR>alpha  f<missing VAR>(B/T)with a sample dependent exponent alpha sim 1, which applies in the wholetemperature 2 K le T<missing VAR> le 270K and magnetic field range B le 8 T<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 1, ',', 0],[9.0, 2, 'K', 0]

B
###Sample Size Effects on the Transport Characteristics of Mesoscopic Graphite Samples|J. Barzola-Quiquia,J. -L. Yao,P. Rödiger,K. Schindler,P. Esquinazi###
(755042, 755042)
 The magnetoresistance of the multigraphenesamples shows a scaling of the form ((R<missing VAR>(B) - R<missing VAR>(0))/R<missing VAR>(0))/T<missing VAR>alpha  f<missing VAR>(B/T)with a sample dependent exponent alpha sim 1, which applies in the wholetemperature 2 K le T<missing VAR> le 270K and magnetic field range B le 8 T<missing VAR>.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 1, ',', 0],[19.0, 2, 'K', 0]

Si/SiGe
###Magnetoresistance in Dilute $p$-Si/SiGe in Parallel and Tilted Magnetic Fields|I. L. Drichko,I. Yu. Smirnov,A. V. Suslov,O. A. Mironov,D. R. Leadley###
(755067, 755070)
Magnetoresistance in Dilute p<missing VAR>-Si/SiGe in Parallel and Tilted Magnetic Fields.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[134.0, 18, 'T', 2]

Si/SiGe
###Magnetoresistance in Dilute $p$-Si/SiGe in Parallel and Tilted Magnetic Fields|I. L. Drichko,I. Yu. Smirnov,A. V. Suslov,O. A. Mironov,D. R. Leadley###
(755126, 755129)
 We report the results of an experimental study of the magnetoresistancerhoxx and rhoxy in two samples of p<missing VAR>-Si/SiGe with low carrierconcentrations p<missing VAR>8.2times1010 cm-2 and p<missing VAR>2times1011cm-2.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[75.0, 18, 'T', 1]

K
###Magnetoresistance in Dilute $p$-Si/SiGe in Parallel and Tilted Magnetic Fields|I. L. Drichko,I. Yu. Smirnov,A. V. Suslov,O. A. Mironov,D. R. Leadley###
(755186, 755186)
 The research was performed in the temperature range of 0.3-2 K andin the magnetic fields of up to 18 T, parallel or tilted with respect to thetwo-dimensional (2D) channel plane.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 18, 'T', 0]

Au2Ge2
###Magnetocrystalline anisotropy in RAu_{2}Ge_{2} (R = La, Ce and Pr) single crystals|Devang A. Joshi,A. K. Nigam,S. K. Dhar,A. Thamizhavel###
(755493, 755496)
Magnetocrystalline anisotropy in R<missing VAR>Au2Ge2 (R<missing VAR>  La, Ce and Pr) single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 13.5, 'and', 2],[116.0, 9, 'K', 2]

La
###Magnetocrystalline anisotropy in RAu_{2}Ge_{2} (R = La, Ce and Pr) single crystals|Devang A. Joshi,A. K. Nigam,S. K. Dhar,A. Thamizhavel###
(755502, 755502)
Magnetocrystalline anisotropy in R<missing VAR>Au2Ge2 (R<missing VAR>  La, Ce and Pr) single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 13.5, 'and', 2],[110.0, 9, 'K', 2]

Ce
###Magnetocrystalline anisotropy in RAu_{2}Ge_{2} (R = La, Ce and Pr) single crystals|Devang A. Joshi,A. K. Nigam,S. K. Dhar,A. Thamizhavel###
(755505, 755505)
Magnetocrystalline anisotropy in R<missing VAR>Au2Ge2 (R<missing VAR>  La, Ce and Pr) single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 13.5, 'and', 2],[107.0, 9, 'K', 2]

Pr
###Magnetocrystalline anisotropy in RAu_{2}Ge_{2} (R = La, Ce and Pr) single crystals|Devang A. Joshi,A. K. Nigam,S. K. Dhar,A. Thamizhavel###
(755509, 755509)
Magnetocrystalline anisotropy in R<missing VAR>Au2Ge2 (R<missing VAR>  La, Ce and Pr) single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 13.5, 'and', 2],[103.0, 9, 'K', 2]

Au2Ge2
###Magnetocrystalline anisotropy in RAu_{2}Ge_{2} (R = La, Ce and Pr) single crystals|Devang A. Joshi,A. K. Nigam,S. K. Dhar,A. Thamizhavel###
(755530, 755533)
 Anisotropic magnetic properties of single crystalline R<missing VAR>Au2Ge2 (R<missing VAR>  La,Ce and Pr) compounds are reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 13.5, 'and', 1],[79.0, 9, 'K', 1]

La
###Magnetocrystalline anisotropy in RAu_{2}Ge_{2} (R = La, Ce and Pr) single crystals|Devang A. Joshi,A. K. Nigam,S. K. Dhar,A. Thamizhavel###
(755539, 755539)
 Anisotropic magnetic properties of single crystalline R<missing VAR>Au2Ge2 (R<missing VAR>  La,Ce and Pr) compounds are reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 13.5, 'and', 1],[73.0, 9, 'K', 1]

Ce
###Magnetocrystalline anisotropy in RAu_{2}Ge_{2} (R = La, Ce and Pr) single crystals|Devang A. Joshi,A. K. Nigam,S. K. Dhar,A. Thamizhavel###
(755543, 755543)
 Anisotropic magnetic properties of single crystalline R<missing VAR>Au2Ge2 (R<missing VAR>  La,Ce and Pr) compounds are reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 13.5, 'and', 1],[69.0, 9, 'K', 1]

Pr
###Magnetocrystalline anisotropy in RAu_{2}Ge_{2} (R = La, Ce and Pr) single crystals|Devang A. Joshi,A. K. Nigam,S. K. Dhar,A. Thamizhavel###
(755547, 755547)
 Anisotropic magnetic properties of single crystalline R<missing VAR>Au2Ge2 (R<missing VAR>  La,Ce and Pr) compounds are reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 13.5, 'and', 1],[65.0, 9, 'K', 1]

LaAu2Ge2
###Magnetocrystalline anisotropy in RAu_{2}Ge_{2} (R = La, Ce and Pr) single crystals|Devang A. Joshi,A. K. Nigam,S. K. Dhar,A. Thamizhavel###
(755557, 755561)
 LaAu2Ge2 exhibit a Pauli-paramagneticbehavior whereas CeAu2Ge2 and PrAu2Ge2 show an antiferromagneticordering with Ngravee<missing VAR>el temperatures T<missing VAR>N  13.5 and 9 K, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 13.5, 'and', 0],[51.0, 9, 'K', 0]

CeAu2Ge2
###Magnetocrystalline anisotropy in RAu_{2}Ge_{2} (R = La, Ce and Pr) single crystals|Devang A. Joshi,A. K. Nigam,S. K. Dhar,A. Thamizhavel###
(755576, 755580)
 LaAu2Ge2 exhibit a Pauli-paramagneticbehavior whereas CeAu2Ge2 and PrAu2Ge2 show an antiferromagneticordering with Ngravee<missing VAR>el temperatures T<missing VAR>N  13.5 and 9 K, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 13.5, 'and', 0],[32.0, 9, 'K', 0]

PrAu2Ge2
###Magnetocrystalline anisotropy in RAu_{2}Ge_{2} (R = La, Ce and Pr) single crystals|Devang A. Joshi,A. K. Nigam,S. K. Dhar,A. Thamizhavel###
(755584, 755588)
 LaAu2Ge2 exhibit a Pauli-paramagneticbehavior whereas CeAu2Ge2 and PrAu2Ge2 show an antiferromagneticordering with Ngravee<missing VAR>el temperatures T<missing VAR>N  13.5 and 9 K, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 13.5, 'and', 0],[24.0, 9, 'K', 0]

N
###Magnetocrystalline anisotropy in RAu_{2}Ge_{2} (R = La, Ce and Pr) single crystals|Devang A. Joshi,A. K. Nigam,S. K. Dhar,A. Thamizhavel###
(755601, 755601)
 LaAu2Ge2 exhibit a Pauli-paramagneticbehavior whereas CeAu2Ge2 and PrAu2Ge2 show an antiferromagneticordering with Ngravee<missing VAR>el temperatures T<missing VAR>N  13.5 and 9 K, respectively.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 13.5, 'and', 0],[11.0, 9, 'K', 0]

N
###Magnetocrystalline anisotropy in RAu_{2}Ge_{2} (R = La, Ce and Pr) single crystals|Devang A. Joshi,A. K. Nigam,S. K. Dhar,A. Thamizhavel###
(755609, 755609)
 LaAu2Ge2 exhibit a Pauli-paramagneticbehavior whereas CeAu2Ge2 and PrAu2Ge2 show an antiferromagneticordering with Ngravee<missing VAR>el temperatures T<missing VAR>N  13.5 and 9 K, respectively.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 13.5, 'and', 0],[3.0, 9, 'K', 0]

Ce
###Magnetocrystalline anisotropy in RAu_{2}Ge_{2} (R = La, Ce and Pr) single crystals|Devang A. Joshi,A. K. Nigam,S. K. Dhar,A. Thamizhavel###
(755629, 755629)
 Theanisotropic magnetic response of Ce and Pr compounds establishes [001] as theeasy axis of magnetization and a sharp spin-flip type metamagnetic transitionis observed in the magnetic isotherms.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 13.5, 'and', 1],[17.0, 9, 'K', 1]

Pr
###Magnetocrystalline anisotropy in RAu_{2}Ge_{2} (R = La, Ce and Pr) single crystals|Devang A. Joshi,A. K. Nigam,S. K. Dhar,A. Thamizhavel###
(755633, 755633)
 Theanisotropic magnetic response of Ce and Pr compounds establishes [001] as theeasy axis of magnetization and a sharp spin-flip type metamagnetic transitionis observed in the magnetic isotherms.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 13.5, 'and', 1],[21.0, 9, 'K', 1]

LaAu2Ge2
###Magnetocrystalline anisotropy in RAu_{2}Ge_{2} (R = La, Ce and Pr) single crystals|Devang A. Joshi,A. K. Nigam,S. K. Dhar,A. Thamizhavel###
(755708, 755712)
 The resistance and magnetoresistancebehavior of these compounds, in particular LaAu2Ge2, indicate ananisotropic Fermi surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 13.5, 'and', 2],[96.0, 9, 'K', 2]

CeAu2Ge2
###Magnetocrystalline anisotropy in RAu_{2}Ge_{2} (R = La, Ce and Pr) single crystals|Devang A. Joshi,A. K. Nigam,S. K. Dhar,A. Thamizhavel###
(755733, 755737)
 The magnetoresistivity of CeAu2Ge2 apparentlyreveals the presence of a residual Kondo interaction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 13.5, 'and', 3],[121.0, 9, 'K', 3]

Ce
###Magnetocrystalline anisotropy in RAu_{2}Ge_{2} (R = La, Ce and Pr) single crystals|Devang A. Joshi,A. K. Nigam,S. K. Dhar,A. Thamizhavel###
(755820, 755820)
 A crystal electric fieldanalysis of the anisotropic susceptibility in conjunction with theexperimentally inferred Schottky heat capacity enables us to propose a crystalelectric field level scheme for Ce and Pr compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[209.0, 13.5, 'and', 4],[208.0, 9, 'K', 4]

Pr
###Magnetocrystalline anisotropy in RAu_{2}Ge_{2} (R = La, Ce and Pr) single crystals|Devang A. Joshi,A. K. Nigam,S. K. Dhar,A. Thamizhavel###
(755824, 755824)
 A crystal electric fieldanalysis of the anisotropic susceptibility in conjunction with theexperimentally inferred Schottky heat capacity enables us to propose a crystalelectric field level scheme for Ce and Pr compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[213.0, 13.5, 'and', 4],[212.0, 9, 'K', 4]

CeAu2Ge2
###Magnetocrystalline anisotropy in RAu_{2}Ge_{2} (R = La, Ce and Pr) single crystals|Devang A. Joshi,A. K. Nigam,S. K. Dhar,A. Thamizhavel###
(755831, 755835)
 For CeAu2Ge2 ourvalues are in excellent agreement with the previous reports on neutrondiffraction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[220.0, 13.5, 'and', 5],[219.0, 9, 'K', 5]

LaAu2Ge2
###Magnetocrystalline anisotropy in RAu_{2}Ge_{2} (R = La, Ce and Pr) single crystals|Devang A. Joshi,A. K. Nigam,S. K. Dhar,A. Thamizhavel###
(755876, 755880)
 The heat capacity data in LaAu2Ge2 show clearly theexistence of Einstein contribution to the heat capacity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[265.0, 13.5, 'and', 6],[264.0, 9, 'K', 6]

URu2Si2
###Interplay of magnetism, Fermi surface reconstructions, and hidden-order in the heavy-fermion material URu$_2$Si$_2$|G. W. Scheerer,W. Knafo,D. Aoki,G. Ballon,A. Mari,D. Vignolles,J. Flouquet###
(755944, 755948)
Interplay of magnetism, Fermi surface reconstructions, and hidden-order in the heavy-fermion material URu2Si2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

URu2Si2
###Interplay of magnetism, Fermi surface reconstructions, and hidden-order in the heavy-fermion material URu$_2$Si$_2$|G. W. Scheerer,W. Knafo,D. Aoki,G. Ballon,A. Mari,D. Vignolles,J. Flouquet###
(755951, 755955)
 URu2Si2 is surely one of the most mysterious of the heavy-fermioncompounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Interplay of magnetism, Fermi surface reconstructions, and hidden-order in the heavy-fermion material URu$_2$Si$_2$|G. W. Scheerer,W. Knafo,D. Aoki,G. Ballon,A. Mari,D. Vignolles,J. Flouquet###
(756025, 756025)
 Despite more than twenty years of experimental and theoreticalworks, the order parameter of the transition at T<missing VAR>0  17.5 K is stillunknown.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

URu2Si2
###Interplay of magnetism, Fermi surface reconstructions, and hidden-order in the heavy-fermion material URu$_2$Si$_2$|G. W. Scheerer,W. Knafo,D. Aoki,G. Ballon,A. Mari,D. Vignolles,J. Flouquet###
(756158, 756162)
 We show that the transition to the hidden-order state in URu2Si2 isinitially driven by a high-temperature crossover at around 40-50 K, which is afingerprint of inter-site electronic correlations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Interplay of magnetism, Fermi surface reconstructions, and hidden-order in the heavy-fermion material URu$_2$Si$_2$|G. W. Scheerer,W. Knafo,D. Aoki,G. Ballon,A. Mari,D. Vignolles,J. Flouquet###
(756189, 756189)
 We show that the transition to the hidden-order state in URu2Si2 isinitially driven by a high-temperature crossover at around 40-50 K, which is afingerprint of inter-site electronic correlations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Interplay of magnetism, Fermi surface reconstructions, and hidden-order in the heavy-fermion material URu$_2$Si$_2$|G. W. Scheerer,W. Knafo,D. Aoki,G. Ballon,A. Mari,D. Vignolles,J. Flouquet###
(756212, 756212)
 In a magnetic fieldmathbfH applied along the easy-axis bfc<missing VAR>, the vanishing of thishigh-temperature scale precedes the polarization of the magnetic moments, aswell as it drives the destabilization of the hidden-order phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Interplay of magnetism, Fermi surface reconstructions, and hidden-order in the heavy-fermion material URu$_2$Si$_2$|G. W. Scheerer,W. Knafo,D. Aoki,G. Ballon,A. Mari,D. Vignolles,J. Flouquet###
(756222, 756222)
 In a magnetic fieldmathbfH applied along the easy-axis bfc<missing VAR>, the vanishing of thishigh-temperature scale precedes the polarization of the magnetic moments, aswell as it drives the destabilization of the hidden-order phase.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Tunnelling anisotropic magnetoresistance effect of single adatoms on a noncollinear magnetic surface|Nuala M. Caffrey,Silke Schröder,Paolo Ferriani,Stefan Heinze###
(756512, 756512)
 As the TAMR effectrequires only a single magnetic electrode, in contrast to the tunnellingmagnetoresistance effect, it offers an attractive route towards alternativespintronics applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[363.0, 50, '%', 4]

In
###Tunnelling anisotropic magnetoresistance effect of single adatoms on a noncollinear magnetic surface|Nuala M. Caffrey,Silke Schröder,Paolo Ferriani,Stefan Heinze###
(756573, 756573)
 In this work we consider the TAMR effect at thesingle-atom limit by investigating the anisotropy of the local density ofstates in the vacuum above transition-metal adatoms adsorbed on a noncollinearmagnetic surface, the monolayer of Mn on W(110).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[302.0, 50, '%', 3]

Mn
###Tunnelling anisotropic magnetoresistance effect of single adatoms on a noncollinear magnetic surface|Nuala M. Caffrey,Silke Schröder,Paolo Ferriani,Stefan Heinze###
(756658, 756658)
 In this work we consider the TAMR effect at thesingle-atom limit by investigating the anisotropy of the local density ofstates in the vacuum above transition-metal adatoms adsorbed on a noncollinearmagnetic surface, the monolayer of Mn on W(110).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[217.0, 50, '%', 3]

Co
###Tunnelling anisotropic magnetoresistance effect of single adatoms on a noncollinear magnetic surface|Nuala M. Caffrey,Silke Schröder,Paolo Ferriani,Stefan Heinze###
(756775, 756775)
 Using first-principles calculations, we investigate the TAMR of Co,Rh and Ir adatoms on Mn/W(110) and relate our results to magnetizationdirection dependent changes in the local density of states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 50, '%', 1]

Rh
###Tunnelling anisotropic magnetoresistance effect of single adatoms on a noncollinear magnetic surface|Nuala M. Caffrey,Silke Schröder,Paolo Ferriani,Stefan Heinze###
(756779, 756779)
 Using first-principles calculations, we investigate the TAMR of Co,Rh and Ir adatoms on Mn/W(110) and relate our results to magnetizationdirection dependent changes in the local density of states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 50, '%', 1]

Ir
###Tunnelling anisotropic magnetoresistance effect of single adatoms on a noncollinear magnetic surface|Nuala M. Caffrey,Silke Schröder,Paolo Ferriani,Stefan Heinze###
(756783, 756783)
 Using first-principles calculations, we investigate the TAMR of Co,Rh and Ir adatoms on Mn/W(110) and relate our results to magnetizationdirection dependent changes in the local density of states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 50, '%', 1]

S
###Tunnelling anisotropic magnetoresistance effect of single adatoms on a noncollinear magnetic surface|Nuala M. Caffrey,Silke Schröder,Paolo Ferriani,Stefan Heinze###
(756908, 756908)
 This effect will be measurable even with a non-magnetic STM tip.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 50, '%', 1]

Fe
###Tunable magnetoresistance in an asymmetrically coupled single molecule junction|Ben Warner,Fadi El Hallak,Henning Prüser,John Sharp,Mats Persson,Andrew J. Fisher,Cyrus F. Hirjibehedin###
(757152, 757152)
 The negative differential resistance is caused bytransient charging of an iron phthalocyanine (FePc) molecule on a single layerof copper nitride (Cu2N) on a Cu(001) surface, and occurs at voltagescorresponding to the alignment of sharp resonances in the filled and emptymolecular states with the Cu(001) Fermi energy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(Cu2N)
###Tunable magnetoresistance in an asymmetrically coupled single molecule junction|Ben Warner,Fadi El Hallak,Henning Prüser,John Sharp,Mats Persson,Andrew J. Fisher,Cyrus F. Hirjibehedin###
(757173, 757177)
 The negative differential resistance is caused bytransient charging of an iron phthalocyanine (FePc) molecule on a single layerof copper nitride (Cu2N) on a Cu(001) surface, and occurs at voltagescorresponding to the alignment of sharp resonances in the filled and emptymolecular states with the Cu(001) Fermi energy.
Featurization successful!
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Tuning Magnetotransport in a Compensated Semimetal at the Atomic Scale|Lin Wang,Ignacio Gutiérrez-Lezama,Céline Barreteau,Nicolas Ubrig,Enrico Giannini,A. F. Morpurgo###
(757463, 757465)
 The latest example is provided by 1T-WTe2, asemimetal recently found to exhibit the largest known magnetoresistance in bulkcrystals, and predicted to become a two-dimensional topological insulator instrained monolayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 1, 'T', 0]

WTe2
###Tuning Magnetotransport in a Compensated Semimetal at the Atomic Scale|Lin Wang,Ignacio Gutiérrez-Lezama,Céline Barreteau,Nicolas Ubrig,Enrico Giannini,A. F. Morpurgo###
(757568, 757570)
 Here, we show that reducing the thickness through facileexfoliation provides an effective experimental knob to tune the electronicproperties of WTe2, which allows us to identify the microscopic mechanismsresponsible for the observed classical and quantum magnetotransport down to theultimate atomic scale.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 1, 'T', 1]

B
###Tuning Magnetotransport in a Compensated Semimetal at the Atomic Scale|Lin Wang,Ignacio Gutiérrez-Lezama,Céline Barreteau,Nicolas Ubrig,Enrico Giannini,A. F. Morpurgo###
(757641, 757641)
 We find that the longitudinal resistance and the veryunconventional B-dependence of the Hall resistance are reproducedquantitatively in terms of a classical two-band model for crystals as thin assix monolayers, and that for thinner crystals a crossover to an insulating,Anderson-localized state occurs.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[180.0, 1, 'T', 2]

WTe2
###Tuning Magnetotransport in a Compensated Semimetal at the Atomic Scale|Lin Wang,Ignacio Gutiérrez-Lezama,Céline Barreteau,Nicolas Ubrig,Enrico Giannini,A. F. Morpurgo###
(757746, 757748)
 Besides establishing the origin of the verylarge magnetoresistance of bulk WTe2, our results represent the first,complete validation of the classical theory for two-band electron-holetransport, and indicate that atomically thin WTe2 layers remain gaplesssemimetals, from which we conclude that searching for a topological insulatingstate by straining monolayers is a challenging, but feasible experiment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[285.0, 1, 'T', 3]

WTe2
###Tuning Magnetotransport in a Compensated Semimetal at the Atomic Scale|Lin Wang,Ignacio Gutiérrez-Lezama,Céline Barreteau,Nicolas Ubrig,Enrico Giannini,A. F. Morpurgo###
(757799, 757801)
 Besides establishing the origin of the verylarge magnetoresistance of bulk WTe2, our results represent the first,complete validation of the classical theory for two-band electron-holetransport, and indicate that atomically thin WTe2 layers remain gaplesssemimetals, from which we conclude that searching for a topological insulatingstate by straining monolayers is a challenging, but feasible experiment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[338.0, 1, 'T', 3]

NdSb
###Large magnetoresistance in the antiferromagnetic semi-metal NdSb|N. Wakeham,E. D. Bauer,M. Neupane,F. Ronning###
(757878, 757879)
Large magnetoresistance in the antiferromagnetic semi-metal NdSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TaAs
###Large magnetoresistance in the antiferromagnetic semi-metal NdSb|N. Wakeham,E. D. Bauer,M. Neupane,F. Ronning###
(757935, 757936)
 These have included materials lackinginversion symmetry such as TaAs, as well Dirac semi-metals such as Cd3As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cd3As2
###Large magnetoresistance in the antiferromagnetic semi-metal NdSb|N. Wakeham,E. D. Bauer,M. Neupane,F. Ronning###
(757953, 757956)
 These have included materials lackinginversion symmetry such as TaAs, as well Dirac semi-metals such as Cd3As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaSb
###Large magnetoresistance in the antiferromagnetic semi-metal NdSb|N. Wakeham,E. D. Bauer,M. Neupane,F. Ronning###
(757973, 757974)
However, it was reported recently that LaSb and LaBi also exhibit XMR, eventhough the rock-salt structure of these materials has inversion symmetry, andthe band-structure calculations do not show a Dirac dispersion in the bulk.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaBi
###Large magnetoresistance in the antiferromagnetic semi-metal NdSb|N. Wakeham,E. D. Bauer,M. Neupane,F. Ronning###
(757978, 757979)
However, it was reported recently that LaSb and LaBi also exhibit XMR, eventhough the rock-salt structure of these materials has inversion symmetry, andthe band-structure calculations do not show a Dirac dispersion in the bulk.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NdSb
###Large magnetoresistance in the antiferromagnetic semi-metal NdSb|N. Wakeham,E. D. Bauer,M. Neupane,F. Ronning###
(758066, 758067)
Here, we present magnetoresistance and specific heat measurements on NdSb,which is isostructural with LaSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaSb
###Large magnetoresistance in the antiferromagnetic semi-metal NdSb|N. Wakeham,E. D. Bauer,M. Neupane,F. Ronning###
(758079, 758080)
Here, we present magnetoresistance and specific heat measurements on NdSb,which is isostructural with LaSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NdSb
###Large magnetoresistance in the antiferromagnetic semi-metal NdSb|N. Wakeham,E. D. Bauer,M. Neupane,F. Ronning###
(758083, 758084)
 NdSb has an antiferromagnetic groundstate,and in analogy with the lanthanum monopnictides, is expected to be atopologically non-trivial semi-metal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NdSb
###Large magnetoresistance in the antiferromagnetic semi-metal NdSb|N. Wakeham,E. D. Bauer,M. Neupane,F. Ronning###
(758139, 758140)
 We show that NdSb has an XMR of 104 %,even within the AFM<missing VAR> state, illustrating that XMR can occur independently of theabsence of time reversal symmetry breaking in zero magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Large magnetoresistance in the antiferromagnetic semi-metal NdSb|N. Wakeham,E. D. Bauer,M. Neupane,F. Ronning###
(758166, 758166)
 We show that NdSb has an XMR of 104 %,even within the AFM<missing VAR> state, illustrating that XMR can occur independently of theabsence of time reversal symmetry breaking in zero magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Gate-voltage response of a one-dimensional ballistic spin valve without spin-orbit interaction|Maciej Misiorny,Carola Meyer###
(758418, 758418)
 In particular, we investigatetheoretically a carbon nanotube (CNT) spin valve in terms of the influence ofthe CNT<missing VAR>-contact interface on the performance of the device.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CN
###Gate-voltage response of a one-dimensional ballistic spin valve without spin-orbit interaction|Maciej Misiorny,Carola Meyer###
(758437, 758438)
 In particular, we investigatetheoretically a carbon nanotube (CNT) spin valve in terms of the influence ofthe CNT<missing VAR>-contact interface on the performance of the device.
Featurization terminated normally.
0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CN
###Gate-voltage response of a one-dimensional ballistic spin valve without spin-orbit interaction|Maciej Misiorny,Carola Meyer###
(758461, 758462)
 In particular, we investigatetheoretically a carbon nanotube (CNT) spin valve in terms of the influence ofthe CNT<missing VAR>-contact interface on the performance of the device.
Featurization terminated normally.
0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZrTe5
###Disruption of the accidental Dirac semimetal state in ZrTe$_{5}$ under hydrostatic pressure|J. L. Zhang,C. Y. Guo,X. D. Zhu,L. Ma,G. L. Zheng,Y. Q. Wang,L. Pi,Y. Chen,H. Q. Yuan,M. L. Tian###
(758757, 758759)
Disruption of the accidental Dirac semimetal state in ZrTe5 under hydrostatic pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 3300, '%', 3],[134.0, 400, '%', 3],[144.0, 2.5, 'GPa', 3],[181.0, 2, 'GPa', 4]

In
###Disruption of the accidental Dirac semimetal state in ZrTe$_{5}$ under hydrostatic pressure|J. L. Zhang,C. Y. Guo,X. D. Zhu,L. Ma,G. L. Zheng,Y. Q. Wang,L. Pi,Y. Chen,H. Q. Yuan,M. L. Tian###
(758845, 758845)
 In the case of H parallel b<missing VAR>, thequasi-linear magnetoresistance decreases drastically from 3300% (9 T) atambient pressure to 400% (14 T) at 2.5 GPa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 3300, '%', 0],[48.0, 400, '%', 0],[58.0, 2.5, 'GPa', 0],[95.0, 2, 'GPa', 1]

H
###Disruption of the accidental Dirac semimetal state in ZrTe$_{5}$ under hydrostatic pressure|J. L. Zhang,C. Y. Guo,X. D. Zhu,L. Ma,G. L. Zheng,Y. Q. Wang,L. Pi,Y. Chen,H. Q. Yuan,M. L. Tian###
(758853, 758853)
 In the case of H parallel b<missing VAR>, thequasi-linear magnetoresistance decreases drastically from 3300% (9 T) atambient pressure to 400% (14 T) at 2.5 GPa.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 3300, '%', 0],[40.0, 400, '%', 0],[50.0, 2.5, 'GPa', 0],[87.0, 2, 'GPa', 1]

ZrTe5
###Disruption of the accidental Dirac semimetal state in ZrTe$_{5}$ under hydrostatic pressure|J. L. Zhang,C. Y. Guo,X. D. Zhu,L. Ma,G. L. Zheng,Y. Q. Wang,L. Pi,Y. Chen,H. Q. Yuan,M. L. Tian###
(758966, 758968)
 Both demonstrate that the pressure breaks the accidental Diracnode in ZrTe5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 3300, '%', 2],[73.0, 400, '%', 2],[63.0, 2.5, 'GPa', 2],[26.0, 2, 'GPa', 1]

H
###Disruption of the accidental Dirac semimetal state in ZrTe$_{5}$ under hydrostatic pressure|J. L. Zhang,C. Y. Guo,X. D. Zhu,L. Ma,G. L. Zheng,Y. Q. Wang,L. Pi,Y. Chen,H. Q. Yuan,M. L. Tian###
(758973, 758973)
 For H parallel c<missing VAR>, in contrast, subtle changes can beseen in the magnetoresistance and quantum oscillations.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 3300, '%', 3],[80.0, 400, '%', 3],[70.0, 2.5, 'GPa', 3],[33.0, 2, 'GPa', 2]

In
###Disruption of the accidental Dirac semimetal state in ZrTe$_{5}$ under hydrostatic pressure|J. L. Zhang,C. Y. Guo,X. D. Zhu,L. Ma,G. L. Zheng,Y. Q. Wang,L. Pi,Y. Chen,H. Q. Yuan,M. L. Tian###
(759009, 759009)
 In the presence ofpressure, ZrTe5 evolves from a highly anisotropic to a nearly isotropicelectronic system, which accompanies with the disruption of the accidentalDirac semimetal state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 3300, '%', 4],[116.0, 400, '%', 4],[106.0, 2.5, 'GPa', 4],[69.0, 2, 'GPa', 3]

ZrTe5
###Disruption of the accidental Dirac semimetal state in ZrTe$_{5}$ under hydrostatic pressure|J. L. Zhang,C. Y. Guo,X. D. Zhu,L. Ma,G. L. Zheng,Y. Q. Wang,L. Pi,Y. Chen,H. Q. Yuan,M. L. Tian###
(759021, 759023)
 In the presence ofpressure, ZrTe5 evolves from a highly anisotropic to a nearly isotropicelectronic system, which accompanies with the disruption of the accidentalDirac semimetal state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 3300, '%', 4],[128.0, 400, '%', 4],[118.0, 2.5, 'GPa', 4],[81.0, 2, 'GPa', 3]

ZrTe5
###Disruption of the accidental Dirac semimetal state in ZrTe$_{5}$ under hydrostatic pressure|J. L. Zhang,C. Y. Guo,X. D. Zhu,L. Ma,G. L. Zheng,Y. Q. Wang,L. Pi,Y. Chen,H. Q. Yuan,M. L. Tian###
(759083, 759085)
 It supports the assumption that ZrTe5 is a semi-3D<missing VAR>Dirac system with linear dispersion along two directions and a quadratic onealong the third.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[208.0, 3300, '%', 5],[190.0, 400, '%', 5],[180.0, 2.5, 'GPa', 5],[143.0, 2, 'GPa', 4]

F/N
###Giant magnetoresistance and anomalous transport in phosphorene-based multilayers with noncollinear magnetization|Moslem Zare,Leyla Majidi,Reza Asgari###
(759196, 759198)
 We theoretically investigate the unusual features of the magnetotransport ina monolayer phosphorene ferromagnetic/normal/ferromagnetic (F/N/F) hybridstructure.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

F
###Giant magnetoresistance and anomalous transport in phosphorene-based multilayers with noncollinear magnetization|Moslem Zare,Leyla Majidi,Reza Asgari###
(759200, 759200)
 We theoretically investigate the unusual features of the magnetotransport ina monolayer phosphorene ferromagnetic/normal/ferromagnetic (F/N/F) hybridstructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(P)
###Giant magnetoresistance and anomalous transport in phosphorene-based multilayers with noncollinear magnetization|Moslem Zare,Leyla Majidi,Reza Asgari###
(759234, 759236)
 We find that the charge conductance can feature a minimum atparallel (P) configuration and a maximum near the antiparallel (AP)configuration of magnetization in the F/N/F structure with n<missing VAR>-doped F andp<missing VAR>-doped N regions and also a finite conductance in the AP configuration withthe N region of n<missing VAR>-type doping.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Giant magnetoresistance and anomalous transport in phosphorene-based multilayers with noncollinear magnetization|Moslem Zare,Leyla Majidi,Reza Asgari###
(759254, 759254)
 We find that the charge conductance can feature a minimum atparallel (P) configuration and a maximum near the antiparallel (AP)configuration of magnetization in the F/N/F structure with n<missing VAR>-doped F andp<missing VAR>-doped N regions and also a finite conductance in the AP configuration withthe N region of n<missing VAR>-type doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F/N/F
###Giant magnetoresistance and anomalous transport in phosphorene-based multilayers with noncollinear magnetization|Moslem Zare,Leyla Majidi,Reza Asgari###
(759268, 759272)
 We find that the charge conductance can feature a minimum atparallel (P) configuration and a maximum near the antiparallel (AP)configuration of magnetization in the F/N/F structure with n<missing VAR>-doped F andp<missing VAR>-doped N regions and also a finite conductance in the AP configuration withthe N region of n<missing VAR>-type doping.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

F
###Giant magnetoresistance and anomalous transport in phosphorene-based multilayers with noncollinear magnetization|Moslem Zare,Leyla Majidi,Reza Asgari###
(759282, 759282)
 We find that the charge conductance can feature a minimum atparallel (P) configuration and a maximum near the antiparallel (AP)configuration of magnetization in the F/N/F structure with n<missing VAR>-doped F andp<missing VAR>-doped N regions and also a finite conductance in the AP configuration withthe N region of n<missing VAR>-type doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Giant magnetoresistance and anomalous transport in phosphorene-based multilayers with noncollinear magnetization|Moslem Zare,Leyla Majidi,Reza Asgari###
(759291, 759291)
 We find that the charge conductance can feature a minimum atparallel (P) configuration and a maximum near the antiparallel (AP)configuration of magnetization in the F/N/F structure with n<missing VAR>-doped F andp<missing VAR>-doped N regions and also a finite conductance in the AP configuration withthe N region of n<missing VAR>-type doping.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Giant magnetoresistance and anomalous transport in phosphorene-based multilayers with noncollinear magnetization|Moslem Zare,Leyla Majidi,Reza Asgari###
(759310, 759310)
 We find that the charge conductance can feature a minimum atparallel (P) configuration and a maximum near the antiparallel (AP)configuration of magnetization in the F/N/F structure with n<missing VAR>-doped F andp<missing VAR>-doped N regions and also a finite conductance in the AP configuration withthe N region of n<missing VAR>-type doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Giant magnetoresistance and anomalous transport in phosphorene-based multilayers with noncollinear magnetization|Moslem Zare,Leyla Majidi,Reza Asgari###
(759319, 759319)
 We find that the charge conductance can feature a minimum atparallel (P) configuration and a maximum near the antiparallel (AP)configuration of magnetization in the F/N/F structure with n<missing VAR>-doped F andp<missing VAR>-doped N regions and also a finite conductance in the AP configuration withthe N region of n<missing VAR>-type doping.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Giant magnetoresistance and anomalous transport in phosphorene-based multilayers with noncollinear magnetization|Moslem Zare,Leyla Majidi,Reza Asgari###
(759332, 759332)
 In particular, the proposed structure exhibitsgiant magnetoresistance, which can be tuned to unity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Giant magnetoresistance and anomalous transport in phosphorene-based multilayers with noncollinear magnetization|Moslem Zare,Leyla Majidi,Reza Asgari###
(759412, 759412)
 This perfect switching isfound to show strong robustness with respect to increasing the contact lengthand tuning the chemical potential of the N region with a gate voltage.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Giant magnetoresistance and anomalous transport in phosphorene-based multilayers with noncollinear magnetization|Moslem Zare,Leyla Majidi,Reza Asgari###
(759465, 759465)
 We alsoexplore the oscillatory behavior of the charge conductance or magnetoresistancein terms of the size of the N region.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Giant magnetoresistance and anomalous transport in phosphorene-based multilayers with noncollinear magnetization|Moslem Zare,Leyla Majidi,Reza Asgari###
(759497, 759497)
 We further demonstrate the penetration ofthe spin-transfer torque into the right F region and show that, unlike graphenestructure, the spin-transfer torque is very sensitive to the chemical potentialof the N region as well as the exchange field of the F region.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Giant magnetoresistance and anomalous transport in phosphorene-based multilayers with noncollinear magnetization|Moslem Zare,Leyla Majidi,Reza Asgari###
(759543, 759543)
 We further demonstrate the penetration ofthe spin-transfer torque into the right F region and show that, unlike graphenestructure, the spin-transfer torque is very sensitive to the chemical potentialof the N region as well as the exchange field of the F region.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Giant magnetoresistance and anomalous transport in phosphorene-based multilayers with noncollinear magnetization|Moslem Zare,Leyla Majidi,Reza Asgari###
(759563, 759563)
 We further demonstrate the penetration ofthe spin-transfer torque into the right F region and show that, unlike graphenestructure, the spin-transfer torque is very sensitive to the chemical potentialof the N region as well as the exchange field of the F region.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tb3Ru4Al12
###Magnetic behavior of metallic kagome lattices, Tb3Ru4Al12 and Er3Ru4Al12|Sanjay Kumar Upadhyay,Kartik K Iyer,E. V. Sampathkumaran###
(759589, 759594)
Magnetic behavior of metallic kagome lattices, Tb3Ru4Al12 and Er3Ru4Al12.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.631578947368421,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.21052631578947367,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15789473684210525,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 22, 'K', 2],[375.0, 20, 'K', 5],[522.0, 2, 'K', 7],[549.0, 2, 'K', 7]

Er3Ru4Al12
###Magnetic behavior of metallic kagome lattices, Tb3Ru4Al12 and Er3Ru4Al12|Sanjay Kumar Upadhyay,Kartik K Iyer,E. V. Sampathkumaran###
(759598, 759603)
Magnetic behavior of metallic kagome lattices, Tb3Ru4Al12 and Er3Ru4Al12.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.631578947368421,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.21052631578947367,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15789473684210525,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 22, 'K', 2],[366.0, 20, 'K', 5],[513.0, 2, 'K', 7],[540.0, 2, 'K', 7]

Tb3Ru4Al12
###Magnetic behavior of metallic kagome lattices, Tb3Ru4Al12 and Er3Ru4Al12|Sanjay Kumar Upadhyay,Kartik K Iyer,E. V. Sampathkumaran###
(759628, 759633)
 We report magnetic behavior of two intermetallics-based kagome lattices,Tb3Ru4Al12 and Er3Ru4Al12, crystallizing in the Gd3Ru4Al12-type hexagonalcrystal structure, by measurements in the range 1.8-300 K with bulkexperimental techniques (ac and dc magnetization, heat-capacity andmagnetoresistance).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.631578947368421,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.21052631578947367,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15789473684210525,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 22, 'K', 1],[336.0, 20, 'K', 4],[483.0, 2, 'K', 6],[510.0, 2, 'K', 6]

Er3Ru4Al12
###Magnetic behavior of metallic kagome lattices, Tb3Ru4Al12 and Er3Ru4Al12|Sanjay Kumar Upadhyay,Kartik K Iyer,E. V. Sampathkumaran###
(759637, 759642)
 We report magnetic behavior of two intermetallics-based kagome lattices,Tb3Ru4Al12 and Er3Ru4Al12, crystallizing in the Gd3Ru4Al12-type hexagonalcrystal structure, by measurements in the range 1.8-300 K with bulkexperimental techniques (ac and dc magnetization, heat-capacity andmagnetoresistance).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.631578947368421,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.21052631578947367,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15789473684210525,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 22, 'K', 1],[327.0, 20, 'K', 4],[474.0, 2, 'K', 6],[501.0, 2, 'K', 6]

Gd3Ru4Al12
###Magnetic behavior of metallic kagome lattices, Tb3Ru4Al12 and Er3Ru4Al12|Sanjay Kumar Upadhyay,Kartik K Iyer,E. V. Sampathkumaran###
(759651, 759656)
 We report magnetic behavior of two intermetallics-based kagome lattices,Tb3Ru4Al12 and Er3Ru4Al12, crystallizing in the Gd3Ru4Al12-type hexagonalcrystal structure, by measurements in the range 1.8-300 K with bulkexperimental techniques (ac and dc magnetization, heat-capacity andmagnetoresistance).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.631578947368421,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.21052631578947367,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15789473684210525,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 22, 'K', 1],[313.0, 20, 'K', 4],[460.0, 2, 'K', 6],[487.0, 2, 'K', 6]

K
###Magnetic behavior of metallic kagome lattices, Tb3Ru4Al12 and Er3Ru4Al12|Sanjay Kumar Upadhyay,Kartik K Iyer,E. V. Sampathkumaran###
(759682, 759682)
 We report magnetic behavior of two intermetallics-based kagome lattices,Tb3Ru4Al12 and Er3Ru4Al12, crystallizing in the Gd3Ru4Al12-type hexagonalcrystal structure, by measurements in the range 1.8-300 K with bulkexperimental techniques (ac and dc magnetization, heat-capacity andmagnetoresistance).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 22, 'K', 1],[287.0, 20, 'K', 4],[434.0, 2, 'K', 6],[461.0, 2, 'K', 6]

Tb
###Magnetic behavior of metallic kagome lattices, Tb3Ru4Al12 and Er3Ru4Al12|Sanjay Kumar Upadhyay,Kartik K Iyer,E. V. Sampathkumaran###
(759726, 759726)
 The main finding is that the Tb compound, known to orderantiferromagnetically below (T<missing VAR>N) 22 K, shows glassy characteristics at lowertemperatures (<15K), thus characterizing this compound as a re-entrantspin-glass.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 22, 'K', 0],[243.0, 20, 'K', 3],[390.0, 2, 'K', 5],[417.0, 2, 'K', 5]

N
###Magnetic behavior of metallic kagome lattices, Tb3Ru4Al12 and Er3Ru4Al12|Sanjay Kumar Upadhyay,Kartik K Iyer,E. V. Sampathkumaran###
(759744, 759744)
 The main finding is that the Tb compound, known to orderantiferromagnetically below (T<missing VAR>N) 22 K, shows glassy characteristics at lowertemperatures (<15K), thus characterizing this compound as a re-entrantspin-glass.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 22, 'K', 0],[225.0, 20, 'K', 3],[372.0, 2, 'K', 5],[399.0, 2, 'K', 5]

K
###Magnetic behavior of metallic kagome lattices, Tb3Ru4Al12 and Er3Ru4Al12|Sanjay Kumar Upadhyay,Kartik K Iyer,E. V. Sampathkumaran###
(759765, 759765)
 The main finding is that the Tb compound, known to orderantiferromagnetically below (T<missing VAR>N) 22 K, shows glassy characteristics at lowertemperatures (<15K), thus characterizing this compound as a re-entrantspin-glass.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 22, 'K', 0],[204.0, 20, 'K', 3],[351.0, 2, 'K', 5],[378.0, 2, 'K', 5]

Gd
###Magnetic behavior of metallic kagome lattices, Tb3Ru4Al12 and Er3Ru4Al12|Sanjay Kumar Upadhyay,Kartik K Iyer,E. V. Sampathkumaran###
(759841, 759841)
 Since the glassy behavior was not seen for the Gd analogue in thepast literature, this finding for the Tb compound emphasizes that this kagomefamily could provide an opportunity to explore the role of higher order (suchas quadrupole) in bringing out magnetic frustration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 22, 'K', 2],[128.0, 20, 'K', 1],[275.0, 2, 'K', 3],[302.0, 2, 'K', 3]

Tb
###Magnetic behavior of metallic kagome lattices, Tb3Ru4Al12 and Er3Ru4Al12|Sanjay Kumar Upadhyay,Kartik K Iyer,E. V. Sampathkumaran###
(759863, 759863)
 Since the glassy behavior was not seen for the Gd analogue in thepast literature, this finding for the Tb compound emphasizes that this kagomefamily could provide an opportunity to explore the role of higher order (suchas quadrupole) in bringing out magnetic frustration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 22, 'K', 2],[106.0, 20, 'K', 1],[253.0, 2, 'K', 3],[280.0, 2, 'K', 3]

Er
###Magnetic behavior of metallic kagome lattices, Tb3Ru4Al12 and Er3Ru4Al12|Sanjay Kumar Upadhyay,Kartik K Iyer,E. V. Sampathkumaran###
(760085, 760085)
 With respect to the Er compound, we do not find anyevidence for long-range magnetic ordering down to 2 K, but this appears to beon the verge of magnetic order at 2 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[339.0, 22, 'K', 5],[116.0, 20, 'K', 2],[31.0, 2, 'K', 0],[58.0, 2, 'K', 0]

SCO
###Scale-invariant magnetoresistance in a cuprate superconductor|P. Giraldo-Gallo,J. A. Galvis,Z. Stegen,K. A. Modic,F. F Balakirev,J. B. Betts,X. Lian,C. Moir,S. C. Riggs,J. Wu,A. T. Bollinger,X. He,I. Bozovic,B. J. Ramshaw,R. D. McDonald,G. S. Boebinger,A. Shekhter###
(760335, 760337)
 Here we report a high-fieldmagnetoresistance study of thin films of L<missing VAR>SCO cuprates in close vicinity tocritical doping, 0.161leq x<missing VAR>leq0.190.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeMn/Pt
###Static and Dynamic Magnetic Properties of FeMn/Pt Multilayers|Ziyan Luo,Yumeng Yang,Yanjun Xu,Mengzhen Zhang,Baoxi Xu,Jingsheng Chen,Yihong Wu###
(760574, 760577)
Static and Dynamic Magnetic Properties of FeMn/Pt Multilayers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[67.0, 0, 'o', 1],[70.0, 360, 'o', 1],[302.0, 0.106, 'is', 5]

FeMn/Pt
###Static and Dynamic Magnetic Properties of FeMn/Pt Multilayers|Ziyan Luo,Yumeng Yang,Yanjun Xu,Mengzhen Zhang,Baoxi Xu,Jingsheng Chen,Yihong Wu###
(760604, 760607)
 Recently we have demonstrated the presence of spin-orbit toque in FeMn/Ptmultilayers which, in combination with the anisotropy field, is able to rotateits magnetization consecutively from 0o to 360o without any external field.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[37.0, 0, 'o', 0],[40.0, 360, 'o', 0],[272.0, 0.106, 'is', 4]

FeMn/Pt
###Static and Dynamic Magnetic Properties of FeMn/Pt Multilayers|Ziyan Luo,Yumeng Yang,Yanjun Xu,Mengzhen Zhang,Baoxi Xu,Jingsheng Chen,Yihong Wu###
(760687, 760690)
Here, we report on an investigation of static and dynamic magnetic propertiesof FeMn/Pt multilayers using combined techniques of magnetometry, ferromagneticresonance, inverse spin Hall effect and spin Hall magnetoresistancemeasurements.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[43.0, 0, 'o', 1],[40.0, 360, 'o', 1],[189.0, 0.106, 'is', 3]

FeMn/Pt
###Static and Dynamic Magnetic Properties of FeMn/Pt Multilayers|Ziyan Luo,Yumeng Yang,Yanjun Xu,Mengzhen Zhang,Baoxi Xu,Jingsheng Chen,Yihong Wu###
(760733, 760736)
 The FeMn/Pt multilayer was found to exhibit ferromagneticproperties, and its temperature dependence of saturation magnetization can befitted well using a phenomenological model by including a finite distributionin Curie temperature due to subtle thickness variations across the multilayersamples.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[89.0, 0, 'o', 2],[86.0, 360, 'o', 2],[143.0, 0.106, 'is', 2]

Pt
###Static and Dynamic Magnetic Properties of FeMn/Pt Multilayers|Ziyan Luo,Yumeng Yang,Yanjun Xu,Mengzhen Zhang,Baoxi Xu,Jingsheng Chen,Yihong Wu###
(760924, 760924)
 A damping parameter of around 0.106 is derived from the frequencydependence of ferromagnetic resonance linewidth, which is comparable to thereported values for other types of Pt-based multilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[280.0, 0, 'o', 4],[277.0, 360, 'o', 4],[45.0, 0.106, 'is', 0]

Mn2Au
###Writing and Reading antiferromagnetic Mn$_2$Au: Néel spin-orbit torques and large anisotropic magnetoresistance|S. Yu. Bodnar,L. Šmejkal,I. Turek,T. Jungwirth,O. Gomonay,J. Sinova,A. A. Sapozhnik,H. -J. Elmers,M. Kläui,M. Jourdan###
(761010, 761012)
Writing and Reading antiferromagnetic Mn2Au Nel spin-orbit torques and large anisotropic magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[372.0, 6, '%', 7]

N
###Writing and Reading antiferromagnetic Mn$_2$Au: Néel spin-orbit torques and large anisotropic magnetoresistance|S. Yu. Bodnar,L. Šmejkal,I. Turek,T. Jungwirth,O. Gomonay,J. Sinova,A. A. Sapozhnik,H. -J. Elmers,M. Kläui,M. Jourdan###
(761014, 761014)
Writing and Reading antiferromagnetic Mn2Au Nel spin-orbit torques and large anisotropic magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[370.0, 6, '%', 7]

N
###Writing and Reading antiferromagnetic Mn$_2$Au: Néel spin-orbit torques and large anisotropic magnetoresistance|S. Yu. Bodnar,L. Šmejkal,I. Turek,T. Jungwirth,O. Gomonay,J. Sinova,A. A. Sapozhnik,H. -J. Elmers,M. Kläui,M. Jourdan###
(761174, 761174)
 However, the active manipulation andread-out of the Neel vector (staggered moment) orientation is challenging.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[210.0, 6, '%', 4]

N
###Writing and Reading antiferromagnetic Mn$_2$Au: Néel spin-orbit torques and large anisotropic magnetoresistance|S. Yu. Bodnar,L. Šmejkal,I. Turek,T. Jungwirth,O. Gomonay,J. Sinova,A. A. Sapozhnik,H. -J. Elmers,M. Kläui,M. Jourdan###
(761233, 761233)
Recent predictions have opened up a path based on a new spin-orbit torque,which couples directly to the Neel order parameter.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 6, '%', 3]

N
###Writing and Reading antiferromagnetic Mn$_2$Au: Néel spin-orbit torques and large anisotropic magnetoresistance|S. Yu. Bodnar,L. Šmejkal,I. Turek,T. Jungwirth,O. Gomonay,J. Sinova,A. A. Sapozhnik,H. -J. Elmers,M. Kläui,M. Jourdan###
(761243, 761243)
 This Neel spin-orbittorque was first experimentally demonstrated in a pioneering work usingsemimetallic CuMnAs.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 6, '%', 2]

CuMnAs
###Writing and Reading antiferromagnetic Mn$_2$Au: Néel spin-orbit torques and large anisotropic magnetoresistance|S. Yu. Bodnar,L. Šmejkal,I. Turek,T. Jungwirth,O. Gomonay,J. Sinova,A. A. Sapozhnik,H. -J. Elmers,M. Kläui,M. Jourdan###
(761274, 761276)
 This Neel spin-orbittorque was first experimentally demonstrated in a pioneering work usingsemimetallic CuMnAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 6, '%', 2]

Mn2Au
###Writing and Reading antiferromagnetic Mn$_2$Au: Néel spin-orbit torques and large anisotropic magnetoresistance|S. Yu. Bodnar,L. Šmejkal,I. Turek,T. Jungwirth,O. Gomonay,J. Sinova,A. A. Sapozhnik,H. -J. Elmers,M. Kläui,M. Jourdan###
(761287, 761289)
 Here we demonstrate for Mn2Au, a good conductor with ahigh ordering temperature suitable for applications, reliable and reproducibleswitching using current pulses and readout by magnetoresistance measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 6, '%', 1]

NaFe1-x
###Thermal activation energy of 3D vortex matter in NaFe1-xCoxAs (x=0.01, 0.03 and 0.07) single crystals|W. J. Choi,Y. I. Seo,D. Ahmad,Yong Seung Kwon###
(761426, 761430)
Thermal activation energy of 3D vortex matter in NaFe1-xCoxAs (x<missing VAR>0.01, 0.03 and 0.07) single crystals.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[8.0, 3, 'D', 0],[6.0, 0.01, ',', 0],[8.0, 0.03, 'and', 0],[61.0, 0.01, ',', 1],[64.0, 0.03, ',', 1],[372.0, 3, 'D', 5]

As
###Thermal activation energy of 3D vortex matter in NaFe1-xCoxAs (x=0.01, 0.03 and 0.07) single crystals|W. J. Choi,Y. I. Seo,D. Ahmad,Yong Seung Kwon###
(761432, 761432)
Thermal activation energy of 3D vortex matter in NaFe1-xCoxAs (x<missing VAR>0.01, 0.03 and 0.07) single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 3, 'D', 0],[4.0, 0.01, ',', 0],[6.0, 0.03, 'and', 0],[59.0, 0.01, ',', 1],[62.0, 0.03, ',', 1],[370.0, 3, 'D', 5]

NaFe1-x
###Thermal activation energy of 3D vortex matter in NaFe1-xCoxAs (x=0.01, 0.03 and 0.07) single crystals|W. J. Choi,Y. I. Seo,D. Ahmad,Yong Seung Kwon###
(761481, 761485)
 We report on the thermally activated flux flow dependency on the dopingdependent mixed state in NaFe1-xCoxAs (x<missing VAR>0.01, 0.03, and 0.07) crystals usingthe magnetoresistivity in the case of B//c<missing VAR>-axis and B//ab-plane.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[63.0, 3, 'D', 1],[45.0, 0.01, ',', 1],[43.0, 0.03, 'and', 1],[6.0, 0.01, ',', 0],[9.0, 0.03, ',', 0],[317.0, 3, 'D', 4]

As
###Thermal activation energy of 3D vortex matter in NaFe1-xCoxAs (x=0.01, 0.03 and 0.07) single crystals|W. J. Choi,Y. I. Seo,D. Ahmad,Yong Seung Kwon###
(761487, 761487)
 We report on the thermally activated flux flow dependency on the dopingdependent mixed state in NaFe1-xCoxAs (x<missing VAR>0.01, 0.03, and 0.07) crystals usingthe magnetoresistivity in the case of B//c<missing VAR>-axis and B//ab-plane.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 3, 'D', 1],[51.0, 0.01, ',', 1],[49.0, 0.03, 'and', 1],[4.0, 0.01, ',', 0],[7.0, 0.03, ',', 0],[315.0, 3, 'D', 4]

B
###Thermal activation energy of 3D vortex matter in NaFe1-xCoxAs (x=0.01, 0.03 and 0.07) single crystals|W. J. Choi,Y. I. Seo,D. Ahmad,Yong Seung Kwon###
(761519, 761519)
 We report on the thermally activated flux flow dependency on the dopingdependent mixed state in NaFe1-xCoxAs (x<missing VAR>0.01, 0.03, and 0.07) crystals usingthe magnetoresistivity in the case of B//c<missing VAR>-axis and B//ab-plane.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 3, 'D', 1],[83.0, 0.01, ',', 1],[81.0, 0.03, 'and', 1],[28.0, 0.01, ',', 0],[25.0, 0.03, ',', 0],[283.0, 3, 'D', 4]

B
###Thermal activation energy of 3D vortex matter in NaFe1-xCoxAs (x=0.01, 0.03 and 0.07) single crystals|W. J. Choi,Y. I. Seo,D. Ahmad,Yong Seung Kwon###
(761528, 761528)
 We report on the thermally activated flux flow dependency on the dopingdependent mixed state in NaFe1-xCoxAs (x<missing VAR>0.01, 0.03, and 0.07) crystals usingthe magnetoresistivity in the case of B//c<missing VAR>-axis and B//ab-plane.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 3, 'D', 1],[92.0, 0.01, ',', 1],[90.0, 0.03, 'and', 1],[37.0, 0.01, ',', 0],[34.0, 0.03, ',', 0],[274.0, 3, 'D', 4]

Tc
###Thermal activation energy of 3D vortex matter in NaFe1-xCoxAs (x=0.01, 0.03 and 0.07) single crystals|W. J. Choi,Y. I. Seo,D. Ahmad,Yong Seung Kwon###
(761575, 761575)
 It was foundclearly that irrespective of the doping ratio, magnetoresistivity showed adistinct tail just above the Tc, offset associated with the thermally activatedflux flow (T<missing VAR>AFF) in our crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 3, 'D', 2],[139.0, 0.01, ',', 2],[137.0, 0.03, 'and', 2],[84.0, 0.01, ',', 1],[81.0, 0.03, ',', 1],[227.0, 3, 'D', 3]

F
###Thermal activation energy of 3D vortex matter in NaFe1-xCoxAs (x=0.01, 0.03 and 0.07) single crystals|W. J. Choi,Y. I. Seo,D. Ahmad,Yong Seung Kwon###
(761599, 761599)
 It was foundclearly that irrespective of the doping ratio, magnetoresistivity showed adistinct tail just above the Tc, offset associated with the thermally activatedflux flow (T<missing VAR>AFF) in our crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 3, 'D', 2],[163.0, 0.01, ',', 2],[161.0, 0.03, 'and', 2],[108.0, 0.01, ',', 1],[105.0, 0.03, ',', 1],[203.0, 3, 'D', 3]

FF
###Thermal activation energy of 3D vortex matter in NaFe1-xCoxAs (x=0.01, 0.03 and 0.07) single crystals|W. J. Choi,Y. I. Seo,D. Ahmad,Yong Seung Kwon###
(761616, 761617)
 Furthermore, in T<missing VAR>AFF region the temperaturedependence of the activation energy follows the relation U(T<missing VAR>, B)U0 (B)(1-T/Tc )q<missing VAR> with q<missing VAR>1.5 in all studied crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[198.0, 3, 'D', 3],[180.0, 0.01, ',', 3],[178.0, 0.03, 'and', 3],[125.0, 0.01, ',', 2],[122.0, 0.03, ',', 2],[185.0, 3, 'D', 2]

U
###Thermal activation energy of 3D vortex matter in NaFe1-xCoxAs (x=0.01, 0.03 and 0.07) single crystals|W. J. Choi,Y. I. Seo,D. Ahmad,Yong Seung Kwon###
(761642, 761642)
 Furthermore, in T<missing VAR>AFF region the temperaturedependence of the activation energy follows the relation U(T<missing VAR>, B)U0 (B)(1-T/Tc )q<missing VAR> with q<missing VAR>1.5 in all studied crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[224.0, 3, 'D', 3],[206.0, 0.01, ',', 3],[204.0, 0.03, 'and', 3],[151.0, 0.01, ',', 2],[148.0, 0.03, ',', 2],[160.0, 3, 'D', 2]

B
###Thermal activation energy of 3D vortex matter in NaFe1-xCoxAs (x=0.01, 0.03 and 0.07) single crystals|W. J. Choi,Y. I. Seo,D. Ahmad,Yong Seung Kwon###
(761647, 761647)
 Furthermore, in T<missing VAR>AFF region the temperaturedependence of the activation energy follows the relation U(T<missing VAR>, B)U0 (B)(1-T/Tc )q<missing VAR> with q<missing VAR>1.5 in all studied crystals.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[229.0, 3, 'D', 3],[211.0, 0.01, ',', 3],[209.0, 0.03, 'and', 3],[156.0, 0.01, ',', 2],[153.0, 0.03, ',', 2],[155.0, 3, 'D', 2]

U0
###Thermal activation energy of 3D vortex matter in NaFe1-xCoxAs (x=0.01, 0.03 and 0.07) single crystals|W. J. Choi,Y. I. Seo,D. Ahmad,Yong Seung Kwon###
(761649, 761650)
 Furthermore, in T<missing VAR>AFF region the temperaturedependence of the activation energy follows the relation U(T<missing VAR>, B)U0 (B)(1-T/Tc )q<missing VAR> with q<missing VAR>1.5 in all studied crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[231.0, 3, 'D', 3],[213.0, 0.01, ',', 3],[211.0, 0.03, 'and', 3],[158.0, 0.01, ',', 2],[155.0, 0.03, ',', 2],[152.0, 3, 'D', 2]

(B)
###Thermal activation energy of 3D vortex matter in NaFe1-xCoxAs (x=0.01, 0.03 and 0.07) single crystals|W. J. Choi,Y. I. Seo,D. Ahmad,Yong Seung Kwon###
(761652, 761654)
 Furthermore, in T<missing VAR>AFF region the temperaturedependence of the activation energy follows the relation U(T<missing VAR>, B)U0 (B)(1-T/Tc )q<missing VAR> with q<missing VAR>1.5 in all studied crystals.
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[234.0, 3, 'D', 3],[216.0, 0.01, ',', 3],[214.0, 0.03, 'and', 3],[161.0, 0.01, ',', 2],[158.0, 0.03, ',', 2],[148.0, 3, 'D', 2]

U0
###Thermal activation energy of 3D vortex matter in NaFe1-xCoxAs (x=0.01, 0.03 and 0.07) single crystals|W. J. Choi,Y. I. Seo,D. Ahmad,Yong Seung Kwon###
(761709, 761710)
 The magnetic field dependenceof the activation energy follows a power law of U0 (B)B(-alpha) where theexponent alpha is changed from a low value to a high value at a crossoverfield of B2T<missing VAR>, indicating the transition from collective to plastic pinning inthe crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[291.0, 3, 'D', 4],[273.0, 0.01, ',', 4],[271.0, 0.03, 'and', 4],[218.0, 0.01, ',', 3],[215.0, 0.03, ',', 3],[92.0, 3, 'D', 1]

B
###Thermal activation energy of 3D vortex matter in NaFe1-xCoxAs (x=0.01, 0.03 and 0.07) single crystals|W. J. Choi,Y. I. Seo,D. Ahmad,Yong Seung Kwon###
(761713, 761713)
 The magnetic field dependenceof the activation energy follows a power law of U0 (B)B(-alpha) where theexponent alpha is changed from a low value to a high value at a crossoverfield of B2T<missing VAR>, indicating the transition from collective to plastic pinning inthe crystals.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[295.0, 3, 'D', 4],[277.0, 0.01, ',', 4],[275.0, 0.03, 'and', 4],[222.0, 0.01, ',', 3],[219.0, 0.03, ',', 3],[89.0, 3, 'D', 1]

B
###Thermal activation energy of 3D vortex matter in NaFe1-xCoxAs (x=0.01, 0.03 and 0.07) single crystals|W. J. Choi,Y. I. Seo,D. Ahmad,Yong Seung Kwon###
(761715, 761715)
 The magnetic field dependenceof the activation energy follows a power law of U0 (B)B(-alpha) where theexponent alpha is changed from a low value to a high value at a crossoverfield of B2T<missing VAR>, indicating the transition from collective to plastic pinning inthe crystals.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[297.0, 3, 'D', 4],[279.0, 0.01, ',', 4],[277.0, 0.03, 'and', 4],[224.0, 0.01, ',', 3],[221.0, 0.03, ',', 3],[87.0, 3, 'D', 1]

B2
###Thermal activation energy of 3D vortex matter in NaFe1-xCoxAs (x=0.01, 0.03 and 0.07) single crystals|W. J. Choi,Y. I. Seo,D. Ahmad,Yong Seung Kwon###
(761761, 761762)
 The magnetic field dependenceof the activation energy follows a power law of U0 (B)B(-alpha) where theexponent alpha is changed from a low value to a high value at a crossoverfield of B2T<missing VAR>, indicating the transition from collective to plastic pinning inthe crystals.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[343.0, 3, 'D', 4],[325.0, 0.01, ',', 4],[323.0, 0.03, 'and', 4],[270.0, 0.01, ',', 3],[267.0, 0.03, ',', 3],[40.0, 3, 'D', 1]

FF
###Thermal activation energy of 3D vortex matter in NaFe1-xCoxAs (x=0.01, 0.03 and 0.07) single crystals|W. J. Choi,Y. I. Seo,D. Ahmad,Yong Seung Kwon###
(761837, 761838)
 Finally, it is suggested that the 3D vortex phase is the dominantphase in the low-temperature region as compared to the T<missing VAR>AFF region in ourseries samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[419.0, 3, 'D', 5],[401.0, 0.01, ',', 5],[399.0, 0.03, 'and', 5],[346.0, 0.01, ',', 4],[343.0, 0.03, ',', 4],[35.0, 3, 'D', 0]

In
###Berry phase theory of planar Hall effect in Topological Insulators|S. Nandy,A. Taraphder,Sumanta Tewari###
(762115, 762115)
 Inthis paper we present a quasi-classical theory of planar Hall effect of athree-dimensional topological insulator in the bulk conduction limit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Splitting efficiency and interference effects in a Cooper pair splitter based on a triple quantum dot with ferromagnetic contacts|K. Bocian,W. Rudzinski,I. Weymann###
(762710, 762710)
 In addition, we analyzed features of thetunnel magnetoresistance (TMR) for a wide range of the gate and bias voltages,as well as for different model parameters, finding the corresponding signchanges of the TMR in certain transport regimes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Singular nonlinear response in metals due to divergent Berry curvature: application to magneto-resistance in metals with type-II Weyl nodes|Hiroaki Ishizuka,Naoto Nagaosa###
(762865, 762866)
Singular nonlinear response in metals due to divergent Berry curvature application to magneto-resistance in metals with type-II Weyl nodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(FS)
###Singular nonlinear response in metals due to divergent Berry curvature: application to magneto-resistance in metals with type-II Weyl nodes|Hiroaki Ishizuka,Naoto Nagaosa###
(762916, 762919)
 The physical properties of metals are often given by the sum of thecontributions from the electrons consisting the Fermi surface (FS), andtherefore, fine structures of the electronic bands and Bloch functions areoften masked by the integral over FS.
Featurization successful!
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FS
###Singular nonlinear response in metals due to divergent Berry curvature: application to magneto-resistance in metals with type-II Weyl nodes|Hiroaki Ishizuka,Naoto Nagaosa###
(762961, 762962)
 The physical properties of metals are often given by the sum of thecontributions from the electrons consisting the Fermi surface (FS), andtherefore, fine structures of the electronic bands and Bloch functions areoften masked by the integral over FS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Singular nonlinear response in metals due to divergent Berry curvature: application to magneto-resistance in metals with type-II Weyl nodes|Hiroaki Ishizuka,Naoto Nagaosa###
(762965, 762965)
 As a consequence, usually, the singularstructures in the electronic bands are often not reflected to the macroscopicquantities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Singular nonlinear response in metals due to divergent Berry curvature: application to magneto-resistance in metals with type-II Weyl nodes|Hiroaki Ishizuka,Naoto Nagaosa###
(763008, 763008)
 In this work, we investigate the anomaly-related magnetoresistancein metals with type-II Weyl nodes close to the FS, and find that theanomaly-related current increases divergently, showing a singular structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Singular nonlinear response in metals due to divergent Berry curvature: application to magneto-resistance in metals with type-II Weyl nodes|Hiroaki Ishizuka,Naoto Nagaosa###
(763036, 763037)
 In this work, we investigate the anomaly-related magnetoresistancein metals with type-II Weyl nodes close to the FS, and find that theanomaly-related current increases divergently, showing a singular structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FS
###Singular nonlinear response in metals due to divergent Berry curvature: application to magneto-resistance in metals with type-II Weyl nodes|Hiroaki Ishizuka,Naoto Nagaosa###
(763049, 763050)
 In this work, we investigate the anomaly-related magnetoresistancein metals with type-II Weyl nodes close to the FS, and find that theanomaly-related current increases divergently, showing a singular structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TmB4
###Quadratic to linear magnetoresistance tuning in TmB4|Sreemanta Mitra,Jeremy Goh Swee Kang,John Shin,Jin Quan Ng,Sai Swaroop Sunku,Tai Kong,Paul C. Canfield,B. Sriram Shastry,Pinaki Sengupta,Christos Panagopoulos###
(763269, 763271)
Quadratic to linear magnetoresistance tuning in TmB4.
Featurization terminated normally.
0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(B)
###Quadratic to linear magnetoresistance tuning in TmB4|Sreemanta Mitra,Jeremy Goh Swee Kang,John Shin,Jin Quan Ng,Sai Swaroop Sunku,Tai Kong,Paul C. Canfield,B. Sriram Shastry,Pinaki Sengupta,Christos Panagopoulos###
(763308, 763310)
 The change of a materials<missing VAR> electrical resistance (R) in response to anexternal magnetic field (B) provides subtle information for thecharacterization of its electronic properties and has found applications insensor and storage related technologies.
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Quadratic to linear magnetoresistance tuning in TmB4|Sreemanta Mitra,Jeremy Goh Swee Kang,John Shin,Jin Quan Ng,Sai Swaroop Sunku,Tai Kong,Paul C. Canfield,B. Sriram Shastry,Pinaki Sengupta,Christos Panagopoulos###
(763355, 763355)
 In good metals, Boltzmanns<missing VAR> theorypredicts a quadratic growth in magnetoresistance (MR) at low B, and saturationat high fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Quadratic to linear magnetoresistance tuning in TmB4|Sreemanta Mitra,Jeremy Goh Swee Kang,John Shin,Jin Quan Ng,Sai Swaroop Sunku,Tai Kong,Paul C. Canfield,B. Sriram Shastry,Pinaki Sengupta,Christos Panagopoulos###
(763389, 763389)
 In good metals, Boltzmanns<missing VAR> theorypredicts a quadratic growth in magnetoresistance (MR) at low B, and saturationat high fields.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TmB4
###Quadratic to linear magnetoresistance tuning in TmB4|Sreemanta Mitra,Jeremy Goh Swee Kang,John Shin,Jin Quan Ng,Sai Swaroop Sunku,Tai Kong,Paul C. Canfield,B. Sriram Shastry,Pinaki Sengupta,Christos Panagopoulos###
(763572, 763574)
 Here we present low-temperature, angle dependentmagnetotransport in single crystals of the antiferromagnetic metal, TmB4.
Featurization terminated normally.
0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(B)
###Quadratic to linear magnetoresistance tuning in TmB4|Sreemanta Mitra,Jeremy Goh Swee Kang,John Shin,Jin Quan Ng,Sai Swaroop Sunku,Tai Kong,Paul C. Canfield,B. Sriram Shastry,Pinaki Sengupta,Christos Panagopoulos###
(763593, 763595)
 Weobserve large, positive and anisotropic MR(B), which can be tuned fromquadratic to linear by changing the direction of the applied field.
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Quadratic to linear magnetoresistance tuning in TmB4|Sreemanta Mitra,Jeremy Goh Swee Kang,John Shin,Jin Quan Ng,Sai Swaroop Sunku,Tai Kong,Paul C. Canfield,B. Sriram Shastry,Pinaki Sengupta,Christos Panagopoulos###
(763632, 763632)
 In view ofthe fact that isotropic, single crystalline metals with large Fermi surface(FS) are not expected to exhibit LMR, we attribute our observations to theanisotropic FS topology of TmB4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(FS)
###Quadratic to linear magnetoresistance tuning in TmB4|Sreemanta Mitra,Jeremy Goh Swee Kang,John Shin,Jin Quan Ng,Sai Swaroop Sunku,Tai Kong,Paul C. Canfield,B. Sriram Shastry,Pinaki Sengupta,Christos Panagopoulos###
(763663, 763666)
 In view ofthe fact that isotropic, single crystalline metals with large Fermi surface(FS) are not expected to exhibit LMR, we attribute our observations to theanisotropic FS topology of TmB4.
Featurization successful!
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FS
###Quadratic to linear magnetoresistance tuning in TmB4|Sreemanta Mitra,Jeremy Goh Swee Kang,John Shin,Jin Quan Ng,Sai Swaroop Sunku,Tai Kong,Paul C. Canfield,B. Sriram Shastry,Pinaki Sengupta,Christos Panagopoulos###
(763698, 763699)
 In view ofthe fact that isotropic, single crystalline metals with large Fermi surface(FS) are not expected to exhibit LMR, we attribute our observations to theanisotropic FS topology of TmB4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TmB4
###Quadratic to linear magnetoresistance tuning in TmB4|Sreemanta Mitra,Jeremy Goh Swee Kang,John Shin,Jin Quan Ng,Sai Swaroop Sunku,Tai Kong,Paul C. Canfield,B. Sriram Shastry,Pinaki Sengupta,Christos Panagopoulos###
(763705, 763707)
 In view ofthe fact that isotropic, single crystalline metals with large Fermi surface(FS) are not expected to exhibit LMR, we attribute our observations to theanisotropic FS topology of TmB4.
Featurization terminated normally.
0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.7Ca0.3MnO3
###Damping and softening of transverse acoustic phonons in colossal magnetoresistive La$_{0.7}$Ca$_{0.3}$MnO$_3$ and La$_{0.7}$Sr$_{0.3}$MnO$_3$|Joel S. Helton,Yang Zhao,Dmitry A. Shulyatev,Jeffrey W. Lynn###
(763773, 763779)
Damping and softening of transverse acoustic phonons in colossal magnetoresistive La0.7Ca0.3MnO3 and La0.7Sr0.3MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 2, ',', 1],[40.0, 2, ',', 1],[88.0, 257, 'K', 2],[133.0, 2.5, 'meV', 2],[156.0, 0.2, ',', 2],[159.0, 0.2, ',', 2],[301.0, 9.5, 'T', 6],[406.0, 0.25, ',', 8],[409.0, 0.25, ',', 8]

La0.7Sr0.3MnO3
###Damping and softening of transverse acoustic phonons in colossal magnetoresistive La$_{0.7}$Ca$_{0.3}$MnO$_3$ and La$_{0.7}$Sr$_{0.3}$MnO$_3$|Joel S. Helton,Yang Zhao,Dmitry A. Shulyatev,Jeffrey W. Lynn###
(763783, 763789)
Damping and softening of transverse acoustic phonons in colossal magnetoresistive La0.7Ca0.3MnO3 and La0.7Sr0.3MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 2, ',', 1],[30.0, 2, ',', 1],[78.0, 257, 'K', 2],[123.0, 2.5, 'meV', 2],[146.0, 0.2, ',', 2],[149.0, 0.2, ',', 2],[291.0, 9.5, 'T', 6],[396.0, 0.25, ',', 8],[399.0, 0.25, ',', 8]

La0.7Ca0.3MnO3
###Damping and softening of transverse acoustic phonons in colossal magnetoresistive La$_{0.7}$Ca$_{0.3}$MnO$_3$ and La$_{0.7}$Sr$_{0.3}$MnO$_3$|Joel S. Helton,Yang Zhao,Dmitry A. Shulyatev,Jeffrey W. Lynn###
(763835, 763841)
 Neutron spectroscopy is used to probe transverse acoustic phonons near the(2, 2, 0) Bragg position in colossal magnetoresistive La0.7Ca0.3MnO3 andLa0.7Sr0.3MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 2, ',', 0],[16.0, 2, ',', 0],[26.0, 257, 'K', 1],[71.0, 2.5, 'meV', 1],[94.0, 0.2, ',', 1],[97.0, 0.2, ',', 1],[239.0, 9.5, 'T', 5],[344.0, 0.25, ',', 7],[347.0, 0.25, ',', 7]

La0.7Sr0.3MnO3
###Damping and softening of transverse acoustic phonons in colossal magnetoresistive La$_{0.7}$Ca$_{0.3}$MnO$_3$ and La$_{0.7}$Sr$_{0.3}$MnO$_3$|Joel S. Helton,Yang Zhao,Dmitry A. Shulyatev,Jeffrey W. Lynn###
(763846, 763852)
 Neutron spectroscopy is used to probe transverse acoustic phonons near the(2, 2, 0) Bragg position in colossal magnetoresistive La0.7Ca0.3MnO3 andLa0.7Sr0.3MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 2, ',', 0],[27.0, 2, ',', 0],[15.0, 257, 'K', 1],[60.0, 2.5, 'meV', 1],[83.0, 0.2, ',', 1],[86.0, 0.2, ',', 1],[228.0, 9.5, 'T', 5],[333.0, 0.25, ',', 7],[336.0, 0.25, ',', 7]

Tc
###Damping and softening of transverse acoustic phonons in colossal magnetoresistive La$_{0.7}$Ca$_{0.3}$MnO$_3$ and La$_{0.7}$Sr$_{0.3}$MnO$_3$|Joel S. Helton,Yang Zhao,Dmitry A. Shulyatev,Jeffrey W. Lynn###
(763865, 763865)
 Upon warming to temperatures near Tc  257 K the phonon peaksin La0.7Ca0.3MnO3 soften and damp significantly with the phonon half width athalf maximum approaching 2.5 meV for phonons at a reduced wave vector of q<missing VAR> (0.2, 0.2, 0).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 2, ',', 1],[46.0, 2, ',', 1],[2.0, 257, 'K', 0],[47.0, 2.5, 'meV', 0],[70.0, 0.2, ',', 0],[73.0, 0.2, ',', 0],[215.0, 9.5, 'T', 4],[320.0, 0.25, ',', 6],[323.0, 0.25, ',', 6]

La0.7Ca0.3MnO3
###Damping and softening of transverse acoustic phonons in colossal magnetoresistive La$_{0.7}$Ca$_{0.3}$MnO$_3$ and La$_{0.7}$Sr$_{0.3}$MnO$_3$|Joel S. Helton,Yang Zhao,Dmitry A. Shulyatev,Jeffrey W. Lynn###
(763878, 763884)
 Upon warming to temperatures near Tc  257 K the phonon peaksin La0.7Ca0.3MnO3 soften and damp significantly with the phonon half width athalf maximum approaching 2.5 meV for phonons at a reduced wave vector of q<missing VAR> (0.2, 0.2, 0).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 2, ',', 1],[59.0, 2, ',', 1],[11.0, 257, 'K', 0],[28.0, 2.5, 'meV', 0],[51.0, 0.2, ',', 0],[54.0, 0.2, ',', 0],[196.0, 9.5, 'T', 4],[301.0, 0.25, ',', 6],[304.0, 0.25, ',', 6]

Tc
###Damping and softening of transverse acoustic phonons in colossal magnetoresistive La$_{0.7}$Ca$_{0.3}$MnO$_3$ and La$_{0.7}$Sr$_{0.3}$MnO$_3$|Joel S. Helton,Yang Zhao,Dmitry A. Shulyatev,Jeffrey W. Lynn###
(763998, 763998)
 This quasielasticscattering is 5 times more intense near Tc than in La0.7Sr0.3MnO3 despitecomparable structural distortions in the two.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[182.0, 2, ',', 3],[179.0, 2, ',', 3],[131.0, 257, 'K', 2],[86.0, 2.5, 'meV', 2],[63.0, 0.2, ',', 2],[60.0, 0.2, ',', 2],[82.0, 9.5, 'T', 2],[187.0, 0.25, ',', 4],[190.0, 0.25, ',', 4]

La0.7Sr0.3MnO3
###Damping and softening of transverse acoustic phonons in colossal magnetoresistive La$_{0.7}$Ca$_{0.3}$MnO$_3$ and La$_{0.7}$Sr$_{0.3}$MnO$_3$|Joel S. Helton,Yang Zhao,Dmitry A. Shulyatev,Jeffrey W. Lynn###
(764004, 764010)
 This quasielasticscattering is 5 times more intense near Tc than in La0.7Sr0.3MnO3 despitecomparable structural distortions in the two.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 2, ',', 3],[185.0, 2, ',', 3],[137.0, 257, 'K', 2],[92.0, 2.5, 'meV', 2],[69.0, 0.2, ',', 2],[66.0, 0.2, ',', 2],[70.0, 9.5, 'T', 2],[175.0, 0.25, ',', 4],[178.0, 0.25, ',', 4]

La0.7Sr0.3MnO3
###Damping and softening of transverse acoustic phonons in colossal magnetoresistive La$_{0.7}$Ca$_{0.3}$MnO$_3$ and La$_{0.7}$Sr$_{0.3}$MnO$_3$|Joel S. Helton,Yang Zhao,Dmitry A. Shulyatev,Jeffrey W. Lynn###
(764157, 764163)
 The damping inLa0.7Sr0.3MnO3 near Tc at a reduced wave vector of q<missing VAR>  (0.25, 0.25, 0) issignificantly smaller but displays a similar trend with an applied magneticfield.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[341.0, 2, ',', 7],[338.0, 2, ',', 7],[290.0, 257, 'K', 6],[245.0, 2.5, 'meV', 6],[222.0, 0.2, ',', 6],[219.0, 0.2, ',', 6],[77.0, 9.5, 'T', 2],[22.0, 0.25, ',', 0],[25.0, 0.25, ',', 0]

Tc
###Damping and softening of transverse acoustic phonons in colossal magnetoresistive La$_{0.7}$Ca$_{0.3}$MnO$_3$ and La$_{0.7}$Sr$_{0.3}$MnO$_3$|Joel S. Helton,Yang Zhao,Dmitry A. Shulyatev,Jeffrey W. Lynn###
(764167, 764167)
 The damping inLa0.7Sr0.3MnO3 near Tc at a reduced wave vector of q<missing VAR>  (0.25, 0.25, 0) issignificantly smaller but displays a similar trend with an applied magneticfield.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[351.0, 2, ',', 7],[348.0, 2, ',', 7],[300.0, 257, 'K', 6],[255.0, 2.5, 'meV', 6],[232.0, 0.2, ',', 6],[229.0, 0.2, ',', 6],[87.0, 9.5, 'T', 2],[18.0, 0.25, ',', 0],[21.0, 0.25, ',', 0]

CrI3
###Spin filtering in CrI$_3$ tunnel junctions|Tula R. Paudel,Evgeny Y. Tsymbal###
(764237, 764239)
Spin filtering in CrI3 tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 100, '%', 4],[218.0, 3, ',', 4],[220.0, 0, '%', 4],[402.0, 2, 'D', 7]

CrI3
###Spin filtering in CrI$_3$ tunnel junctions|Tula R. Paudel,Evgeny Y. Tsymbal###
(764295, 764297)
 Among these materials is CrI3 -a magnetic semiconductor exhibiting transitions between antiferromagnetic andferromagnetic orderings under the influence of an applied magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 100, '%', 2],[160.0, 3, ',', 2],[162.0, 0, '%', 2],[344.0, 2, 'D', 5]

Cu
###Spin filtering in CrI$_3$ tunnel junctions|Tula R. Paudel,Evgeny Y. Tsymbal###
(764386, 764386)
 Here,using first-principles methods based on density functional theory, we explorespin-dependent transport in tunnel junctions formed of fcc Cu (111) electrodesand a CrI3 tunnel barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 100, '%', 1],[71.0, 3, ',', 1],[73.0, 0, '%', 1],[255.0, 2, 'D', 4]

CrI3
###Spin filtering in CrI$_3$ tunnel junctions|Tula R. Paudel,Evgeny Y. Tsymbal###
(764399, 764401)
 Here,using first-principles methods based on density functional theory, we explorespin-dependent transport in tunnel junctions formed of fcc Cu (111) electrodesand a CrI3 tunnel barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 100, '%', 1],[56.0, 3, ',', 1],[58.0, 0, '%', 1],[240.0, 2, 'D', 4]

CrI3
###Spin filtering in CrI$_3$ tunnel junctions|Tula R. Paudel,Evgeny Y. Tsymbal###
(764442, 764444)
 We find about 100% spin polarization of thetunneling current for a ferromagnetically-ordered four-monolayer CrI3 andtunneling magnetoresistance of about 3,000% associated with a change ofmagnetic ordering in CrI3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 100, '%', 0],[13.0, 3, ',', 0],[15.0, 0, '%', 0],[197.0, 2, 'D', 3]

CrI3
###Spin filtering in CrI$_3$ tunnel junctions|Tula R. Paudel,Evgeny Y. Tsymbal###
(764479, 764481)
 We find about 100% spin polarization of thetunneling current for a ferromagnetically-ordered four-monolayer CrI3 andtunneling magnetoresistance of about 3,000% associated with a change ofmagnetic ordering in CrI3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 100, '%', 0],[22.0, 3, ',', 0],[20.0, 0, '%', 0],[160.0, 2, 'D', 3]

CrI3
###Spin filtering in CrI$_3$ tunnel junctions|Tula R. Paudel,Evgeny Y. Tsymbal###
(764517, 764519)
 This behavior is understood in terms of the spinand wave-vector dependent evanescent states in CrI3 which control thetunneling conductance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 100, '%', 1],[60.0, 3, ',', 1],[58.0, 0, '%', 1],[122.0, 2, 'D', 2]

Cu
###Spin filtering in CrI$_3$ tunnel junctions|Tula R. Paudel,Evgeny Y. Tsymbal###
(764547, 764547)
 We find a sizable charge transfer from Cu to CrI3which adds new features to the mechanism of spin-filtering in CrI3-basedtunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 100, '%', 2],[90.0, 3, ',', 2],[88.0, 0, '%', 2],[94.0, 2, 'D', 1]

CrI3
###Spin filtering in CrI$_3$ tunnel junctions|Tula R. Paudel,Evgeny Y. Tsymbal###
(764551, 764553)
 We find a sizable charge transfer from Cu to CrI3which adds new features to the mechanism of spin-filtering in CrI3-basedtunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 100, '%', 2],[94.0, 3, ',', 2],[92.0, 0, '%', 2],[88.0, 2, 'D', 1]

CrI3
###Spin filtering in CrI$_3$ tunnel junctions|Tula R. Paudel,Evgeny Y. Tsymbal###
(764578, 764580)
 We find a sizable charge transfer from Cu to CrI3which adds new features to the mechanism of spin-filtering in CrI3-basedtunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 100, '%', 2],[121.0, 3, ',', 2],[119.0, 0, '%', 2],[61.0, 2, 'D', 1]

CrI3
###Spin filtering in CrI$_3$ tunnel junctions|Tula R. Paudel,Evgeny Y. Tsymbal###
(764609, 764611)
 Our results elucidate the mechanisms of spin filtering inCrI3 tunnel junctions and provide important insights for the design ofmagnetoresistive devices based on 2D magnetic crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[195.0, 100, '%', 3],[152.0, 3, ',', 3],[150.0, 0, '%', 3],[30.0, 2, 'D', 0]

Gd4PtAl
###Reentrant spin-glass and transport behavior of Gd4PtAl, a compound with three sites for Gd|Ram Kumar,Jyoti Sharma,Kartik K Iyer,E. V. Sampathkumaran###
(764670, 764673)
Reentrant spin-glass and transport behavior of Gd4PtAl, a compound with three sites for Gd.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 64, 'K', 3],[203.0, 20, 'K', 3],[222.0, 64, 'K', 4],[286.0, 20, 'K', 5],[334.0, 20, 'K', 6],[396.0, 20, 'K', 6]

Gd
###Reentrant spin-glass and transport behavior of Gd4PtAl, a compound with three sites for Gd|Ram Kumar,Jyoti Sharma,Kartik K Iyer,E. V. Sampathkumaran###
(764688, 764688)
Reentrant spin-glass and transport behavior of Gd4PtAl, a compound with three sites for Gd.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 64, 'K', 3],[188.0, 20, 'K', 3],[207.0, 64, 'K', 4],[271.0, 20, 'K', 5],[319.0, 20, 'K', 6],[381.0, 20, 'K', 6]

K
###Reentrant spin-glass and transport behavior of Gd4PtAl, a compound with three sites for Gd|Ram Kumar,Jyoti Sharma,Kartik K Iyer,E. V. Sampathkumaran###
(764708, 764708)
 We report temperature (T) dependence (2-330 K) of D<missing VAR>C and AC magnetization(M), isothermal remnant magnetization (MIRM), heat capacity (C), electricalresistivity (rho), and magnetoresistance (MR) of a ternary intermetalliccompound, Gd4PtAl, crystallizing in a cubic (space group F-43m) structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 64, 'K', 2],[168.0, 20, 'K', 2],[187.0, 64, 'K', 3],[251.0, 20, 'K', 4],[299.0, 20, 'K', 5],[361.0, 20, 'K', 5]

C
###Reentrant spin-glass and transport behavior of Gd4PtAl, a compound with three sites for Gd|Ram Kumar,Jyoti Sharma,Kartik K Iyer,E. V. Sampathkumaran###
(764714, 764714)
 We report temperature (T) dependence (2-330 K) of D<missing VAR>C and AC magnetization(M), isothermal remnant magnetization (MIRM), heat capacity (C), electricalresistivity (rho), and magnetoresistance (MR) of a ternary intermetalliccompound, Gd4PtAl, crystallizing in a cubic (space group F-43m) structure.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 64, 'K', 2],[162.0, 20, 'K', 2],[181.0, 64, 'K', 3],[245.0, 20, 'K', 4],[293.0, 20, 'K', 5],[355.0, 20, 'K', 5]

C
###Reentrant spin-glass and transport behavior of Gd4PtAl, a compound with three sites for Gd|Ram Kumar,Jyoti Sharma,Kartik K Iyer,E. V. Sampathkumaran###
(764719, 764719)
 We report temperature (T) dependence (2-330 K) of D<missing VAR>C and AC magnetization(M), isothermal remnant magnetization (MIRM), heat capacity (C), electricalresistivity (rho), and magnetoresistance (MR) of a ternary intermetalliccompound, Gd4PtAl, crystallizing in a cubic (space group F-43m) structure.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 64, 'K', 2],[157.0, 20, 'K', 2],[176.0, 64, 'K', 3],[240.0, 20, 'K', 4],[288.0, 20, 'K', 5],[350.0, 20, 'K', 5]

(C)
###Reentrant spin-glass and transport behavior of Gd4PtAl, a compound with three sites for Gd|Ram Kumar,Jyoti Sharma,Kartik K Iyer,E. V. Sampathkumaran###
(764747, 764749)
 We report temperature (T) dependence (2-330 K) of D<missing VAR>C and AC magnetization(M), isothermal remnant magnetization (MIRM), heat capacity (C), electricalresistivity (rho), and magnetoresistance (MR) of a ternary intermetalliccompound, Gd4PtAl, crystallizing in a cubic (space group F-43m) structure.
Featurization successful!
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 64, 'K', 2],[127.0, 20, 'K', 2],[146.0, 64, 'K', 3],[210.0, 20, 'K', 4],[258.0, 20, 'K', 5],[320.0, 20, 'K', 5]

Gd4PtAl
###Reentrant spin-glass and transport behavior of Gd4PtAl, a compound with three sites for Gd|Ram Kumar,Jyoti Sharma,Kartik K Iyer,E. V. Sampathkumaran###
(764783, 764786)
 We report temperature (T) dependence (2-330 K) of D<missing VAR>C and AC magnetization(M), isothermal remnant magnetization (MIRM), heat capacity (C), electricalresistivity (rho), and magnetoresistance (MR) of a ternary intermetalliccompound, Gd4PtAl, crystallizing in a cubic (space group F-43m) structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 64, 'K', 2],[90.0, 20, 'K', 2],[109.0, 64, 'K', 3],[173.0, 20, 'K', 4],[221.0, 20, 'K', 5],[283.0, 20, 'K', 5]

F
###Reentrant spin-glass and transport behavior of Gd4PtAl, a compound with three sites for Gd|Ram Kumar,Jyoti Sharma,Kartik K Iyer,E. V. Sampathkumaran###
(764802, 764802)
 We report temperature (T) dependence (2-330 K) of D<missing VAR>C and AC magnetization(M), isothermal remnant magnetization (MIRM), heat capacity (C), electricalresistivity (rho), and magnetoresistance (MR) of a ternary intermetalliccompound, Gd4PtAl, crystallizing in a cubic (space group F-43m) structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 64, 'K', 2],[74.0, 20, 'K', 2],[93.0, 64, 'K', 3],[157.0, 20, 'K', 4],[205.0, 20, 'K', 5],[267.0, 20, 'K', 5]

In
###Reentrant spin-glass and transport behavior of Gd4PtAl, a compound with three sites for Gd|Ram Kumar,Jyoti Sharma,Kartik K Iyer,E. V. Sampathkumaran###
(764811, 764811)
 Inthis structure, there are three sites for the rare-earth.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 64, 'K', 1],[65.0, 20, 'K', 1],[84.0, 64, 'K', 2],[148.0, 20, 'K', 3],[196.0, 20, 'K', 4],[258.0, 20, 'K', 4]

C
###Reentrant spin-glass and transport behavior of Gd4PtAl, a compound with three sites for Gd|Ram Kumar,Jyoti Sharma,Kartik K Iyer,E. V. Sampathkumaran###
(764881, 764881)
 The C(T) data reveal an upturn below 64 K,shifting to a lower temperature with increasing field, which establishes thatthe onset of magnetic order is of an antiferromagnetic type.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 64, 'K', 1],[5.0, 20, 'K', 1],[14.0, 64, 'K', 0],[78.0, 20, 'K', 1],[126.0, 20, 'K', 2],[188.0, 20, 'K', 2]

C
###Reentrant spin-glass and transport behavior of Gd4PtAl, a compound with three sites for Gd|Ram Kumar,Jyoti Sharma,Kartik K Iyer,E. V. Sampathkumaran###
(764965, 764965)
 However, there isno worthwhile feature near 20 K in the C(T) curve.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 64, 'K', 2],[89.0, 20, 'K', 2],[70.0, 64, 'K', 1],[6.0, 20, 'K', 0],[42.0, 20, 'K', 1],[104.0, 20, 'K', 1]

C
###Reentrant spin-glass and transport behavior of Gd4PtAl, a compound with three sites for Gd|Ram Kumar,Jyoti Sharma,Kartik K Iyer,E. V. Sampathkumaran###
(764974, 764974)
 AC susceptibility peakundergoes an observable change with frequency and, in particular, the peakaround 20 K gets suppressed with the application of a dc magnetic field; inaddition, MIRM undergoes a slow decay with time and isothermal M<missing VAR> exhibitslow-field hysteresis below 20 K only, which is typical of spin-glasses.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 64, 'K', 3],[98.0, 20, 'K', 3],[79.0, 64, 'K', 2],[15.0, 20, 'K', 1],[33.0, 20, 'K', 0],[95.0, 20, 'K', 0]

SmFeO3
###Spin structure and spin Hall magnetoresistance of epitaxial thin films of the insulating non-collinear antiferromagnet SmFeO$_3$|T Hajiri,L. Baldrati,R. Lebrun,M. Filianina,A. Ross,N. Tanahashi,M. Kuroda,W. L. Gan,T. O. Menteş,F. Genuzio,A. Locatelli,H Asano,M. Kläui###
(765260, 765263)
Spin structure and spin Hall magnetoresistance of epitaxial thin films of the insulating non-collinear antiferromagnet SmFeO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Spin structure and spin Hall magnetoresistance of epitaxial thin films of the insulating non-collinear antiferromagnet SmFeO$_3$|T Hajiri,L. Baldrati,R. Lebrun,M. Filianina,A. Ross,N. Tanahashi,M. Kuroda,W. L. Gan,T. O. Menteş,F. Genuzio,A. Locatelli,H Asano,M. Kläui###
(765286, 765286)
 We report a combined study of imaging the antiferromagnetic (AFM) spinstructure and measuring the spin Hall magnetoresistance (SMR) in epitaxial thinfilms of the insulating non-collinear antiferromagnet SmFeO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin structure and spin Hall magnetoresistance of epitaxial thin films of the insulating non-collinear antiferromagnet SmFeO$_3$|T Hajiri,L. Baldrati,R. Lebrun,M. Filianina,A. Ross,N. Tanahashi,M. Kuroda,W. L. Gan,T. O. Menteş,F. Genuzio,A. Locatelli,H Asano,M. Kläui###
(765308, 765308)
 We report a combined study of imaging the antiferromagnetic (AFM) spinstructure and measuring the spin Hall magnetoresistance (SMR) in epitaxial thinfilms of the insulating non-collinear antiferromagnet SmFeO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SmFeO3
###Spin structure and spin Hall magnetoresistance of epitaxial thin films of the insulating non-collinear antiferromagnet SmFeO$_3$|T Hajiri,L. Baldrati,R. Lebrun,M. Filianina,A. Ross,N. Tanahashi,M. Kuroda,W. L. Gan,T. O. Menteş,F. Genuzio,A. Locatelli,H Asano,M. Kläui###
(765334, 765337)
 We report a combined study of imaging the antiferromagnetic (AFM) spinstructure and measuring the spin Hall magnetoresistance (SMR) in epitaxial thinfilms of the insulating non-collinear antiferromagnet SmFeO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Spin structure and spin Hall magnetoresistance of epitaxial thin films of the insulating non-collinear antiferromagnet SmFeO$_3$|T Hajiri,L. Baldrati,R. Lebrun,M. Filianina,A. Ross,N. Tanahashi,M. Kuroda,W. L. Gan,T. O. Menteş,F. Genuzio,A. Locatelli,H Asano,M. Kläui###
(765367, 765367)
 X<missing VAR>-ray magneticlinear dichroism photoemission electron microscopy measurements reveal that theAFM<missing VAR> spins of the SmFeO3(110) align in the plane of the film.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O3
###Spin structure and spin Hall magnetoresistance of epitaxial thin films of the insulating non-collinear antiferromagnet SmFeO$_3$|T Hajiri,L. Baldrati,R. Lebrun,M. Filianina,A. Ross,N. Tanahashi,M. Kuroda,W. L. Gan,T. O. Menteş,F. Genuzio,A. Locatelli,H Asano,M. Kläui###
(765378, 765379)
 X<missing VAR>-ray magneticlinear dichroism photoemission electron microscopy measurements reveal that theAFM<missing VAR> spins of the SmFeO3(110) align in the plane of the film.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SmFeO3/Ta
###Spin structure and spin Hall magnetoresistance of epitaxial thin films of the insulating non-collinear antiferromagnet SmFeO$_3$|T Hajiri,L. Baldrati,R. Lebrun,M. Filianina,A. Ross,N. Tanahashi,M. Kuroda,W. L. Gan,T. O. Menteş,F. Genuzio,A. Locatelli,H Asano,M. Kläui###
(765412, 765417)
 Angularlydependent magnetoresistance measurements show that SmFeO3/Ta bilayersexhibit a positive SMR, in contrast to the negative SMR expected in previouslystudied collinear AFMs.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

S
###Spin structure and spin Hall magnetoresistance of epitaxial thin films of the insulating non-collinear antiferromagnet SmFeO$_3$|T Hajiri,L. Baldrati,R. Lebrun,M. Filianina,A. Ross,N. Tanahashi,M. Kuroda,W. L. Gan,T. O. Menteş,F. Genuzio,A. Locatelli,H Asano,M. Kläui###
(765428, 765428)
 Angularlydependent magnetoresistance measurements show that SmFeO3/Ta bilayersexhibit a positive SMR, in contrast to the negative SMR expected in previouslystudied collinear AFMs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin structure and spin Hall magnetoresistance of epitaxial thin films of the insulating non-collinear antiferromagnet SmFeO$_3$|T Hajiri,L. Baldrati,R. Lebrun,M. Filianina,A. Ross,N. Tanahashi,M. Kuroda,W. L. Gan,T. O. Menteş,F. Genuzio,A. Locatelli,H Asano,M. Kläui###
(765443, 765443)
 Angularlydependent magnetoresistance measurements show that SmFeO3/Ta bilayersexhibit a positive SMR, in contrast to the negative SMR expected in previouslystudied collinear AFMs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Spin structure and spin Hall magnetoresistance of epitaxial thin films of the insulating non-collinear antiferromagnet SmFeO$_3$|T Hajiri,L. Baldrati,R. Lebrun,M. Filianina,A. Ross,N. Tanahashi,M. Kuroda,W. L. Gan,T. O. Menteş,F. Genuzio,A. Locatelli,H Asano,M. Kläui###
(765459, 765459)
 Angularlydependent magnetoresistance measurements show that SmFeO3/Ta bilayersexhibit a positive SMR, in contrast to the negative SMR expected in previouslystudied collinear AFMs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin structure and spin Hall magnetoresistance of epitaxial thin films of the insulating non-collinear antiferromagnet SmFeO$_3$|T Hajiri,L. Baldrati,R. Lebrun,M. Filianina,A. Ross,N. Tanahashi,M. Kuroda,W. L. Gan,T. O. Menteş,F. Genuzio,A. Locatelli,H Asano,M. Kläui###
(765465, 765465)
 The SMR amplitude increases linearly with increasingexternal magnetic field at higher magnetic field, suggesting that field-inducedcanting of the AFM<missing VAR> spins plays an important role.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Spin structure and spin Hall magnetoresistance of epitaxial thin films of the insulating non-collinear antiferromagnet SmFeO$_3$|T Hajiri,L. Baldrati,R. Lebrun,M. Filianina,A. Ross,N. Tanahashi,M. Kuroda,W. L. Gan,T. O. Menteş,F. Genuzio,A. Locatelli,H Asano,M. Kläui###
(765511, 765511)
 The SMR amplitude increases linearly with increasingexternal magnetic field at higher magnetic field, suggesting that field-inducedcanting of the AFM<missing VAR> spins plays an important role.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin structure and spin Hall magnetoresistance of epitaxial thin films of the insulating non-collinear antiferromagnet SmFeO$_3$|T Hajiri,L. Baldrati,R. Lebrun,M. Filianina,A. Ross,N. Tanahashi,M. Kuroda,W. L. Gan,T. O. Menteş,F. Genuzio,A. Locatelli,H Asano,M. Kläui###
(765525, 765525)
 In contrast, around thecoercive field, no detectable SMR signal is observed, indicating that SMR ofAFM<missing VAR> and canting magnetization components cancel out.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin structure and spin Hall magnetoresistance of epitaxial thin films of the insulating non-collinear antiferromagnet SmFeO$_3$|T Hajiri,L. Baldrati,R. Lebrun,M. Filianina,A. Ross,N. Tanahashi,M. Kuroda,W. L. Gan,T. O. Menteş,F. Genuzio,A. Locatelli,H Asano,M. Kläui###
(765544, 765544)
 In contrast, around thecoercive field, no detectable SMR signal is observed, indicating that SMR ofAFM<missing VAR> and canting magnetization components cancel out.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin structure and spin Hall magnetoresistance of epitaxial thin films of the insulating non-collinear antiferromagnet SmFeO$_3$|T Hajiri,L. Baldrati,R. Lebrun,M. Filianina,A. Ross,N. Tanahashi,M. Kuroda,W. L. Gan,T. O. Menteş,F. Genuzio,A. Locatelli,H Asano,M. Kläui###
(765559, 765559)
 In contrast, around thecoercive field, no detectable SMR signal is observed, indicating that SMR ofAFM<missing VAR> and canting magnetization components cancel out.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Spin structure and spin Hall magnetoresistance of epitaxial thin films of the insulating non-collinear antiferromagnet SmFeO$_3$|T Hajiri,L. Baldrati,R. Lebrun,M. Filianina,A. Ross,N. Tanahashi,M. Kuroda,W. L. Gan,T. O. Menteş,F. Genuzio,A. Locatelli,H Asano,M. Kläui###
(765567, 765567)
 In contrast, around thecoercive field, no detectable SMR signal is observed, indicating that SMR ofAFM<missing VAR> and canting magnetization components cancel out.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Spin structure and spin Hall magnetoresistance of epitaxial thin films of the insulating non-collinear antiferromagnet SmFeO$_3$|T Hajiri,L. Baldrati,R. Lebrun,M. Filianina,A. Ross,N. Tanahashi,M. Kuroda,W. L. Gan,T. O. Menteş,F. Genuzio,A. Locatelli,H Asano,M. Kläui###
(765586, 765586)
 Below 50K, the SMRamplitude increases sizably by a factor of two as compared to room temperature,which likely correlates with the long-range ordering of the Sm ions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin structure and spin Hall magnetoresistance of epitaxial thin films of the insulating non-collinear antiferromagnet SmFeO$_3$|T Hajiri,L. Baldrati,R. Lebrun,M. Filianina,A. Ross,N. Tanahashi,M. Kuroda,W. L. Gan,T. O. Menteş,F. Genuzio,A. Locatelli,H Asano,M. Kläui###
(765591, 765591)
 Below 50K, the SMRamplitude increases sizably by a factor of two as compared to room temperature,which likely correlates with the long-range ordering of the Sm ions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sm
###Spin structure and spin Hall magnetoresistance of epitaxial thin films of the insulating non-collinear antiferromagnet SmFeO$_3$|T Hajiri,L. Baldrati,R. Lebrun,M. Filianina,A. Ross,N. Tanahashi,M. Kuroda,W. L. Gan,T. O. Menteş,F. Genuzio,A. Locatelli,H Asano,M. Kläui###
(765644, 765644)
 Below 50K, the SMRamplitude increases sizably by a factor of two as compared to room temperature,which likely correlates with the long-range ordering of the Sm ions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin structure and spin Hall magnetoresistance of epitaxial thin films of the insulating non-collinear antiferromagnet SmFeO$_3$|T Hajiri,L. Baldrati,R. Lebrun,M. Filianina,A. Ross,N. Tanahashi,M. Kuroda,W. L. Gan,T. O. Menteş,F. Genuzio,A. Locatelli,H Asano,M. Kläui###
(765660, 765660)
 Ourresults show that the SMR is a sensitive technique for non-equilibrium spinsystem of non-collinear AFM<missing VAR> systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Spin structure and spin Hall magnetoresistance of epitaxial thin films of the insulating non-collinear antiferromagnet SmFeO$_3$|T Hajiri,L. Baldrati,R. Lebrun,M. Filianina,A. Ross,N. Tanahashi,M. Kuroda,W. L. Gan,T. O. Menteş,F. Genuzio,A. Locatelli,H Asano,M. Kläui###
(765690, 765690)
 Ourresults show that the SMR is a sensitive technique for non-equilibrium spinsystem of non-collinear AFM<missing VAR> systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Spin-transfer dynamics in MgO-based magnetic tunnel junctions with an out-of-plane magnetized free layer and an in-plane polarizer|Ewa Kowalska,Volker Sluka,Attila Kákay,Ciarán Fowley,Jürgen Lindner,Jürgen Fassbender,Alina M. Deac###
(765712, 765713)
Spin-transfer dynamics in MgO-based magnetic tunnel junctions with an out-of-plane magnetized free layer and an in-plane polarizer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Spin-transfer dynamics in MgO-based magnetic tunnel junctions with an out-of-plane magnetized free layer and an in-plane polarizer|Ewa Kowalska,Volker Sluka,Attila Kákay,Ciarán Fowley,Jürgen Lindner,Jürgen Fassbender,Alina M. Deac###
(765778, 765779)
 Here, we present an analytical and numerical model describing themagnetization dynamics in MgO-based spin-torque nano-oscillators with anin-plane magnetized polarizer and an out-of-plane free layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin-transfer dynamics in MgO-based magnetic tunnel junctions with an out-of-plane magnetized free layer and an in-plane polarizer|Ewa Kowalska,Volker Sluka,Attila Kákay,Ciarán Fowley,Jürgen Lindner,Jürgen Fassbender,Alina M. Deac###
(765949, 765949)
 In a morerealistic approach, we include the bias dependence of the tunnelmagnetoresistance, which is assumed empirically to be a piecewise linearfunction of the applied voltage.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Quantum effects in graphitic materials: Colossal magnetoresistance, Andreev reflections, Little-Parks effect, ferromagnetism, and granular superconductivity|Nadina Gheorghiu,Charles R. Ebbing,Benjamin T. Pierce,Timothy J. Haugan###
(766283, 766283)
 Inparticular, negative nonlocal conductance is dominated by the crossed Andreevreflection.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Quantum effects in graphitic materials: Colossal magnetoresistance, Andreev reflections, Little-Parks effect, ferromagnetism, and granular superconductivity|Nadina Gheorghiu,Charles R. Ebbing,Benjamin T. Pierce,Timothy J. Haugan###
(766311, 766311)
 In graphene, the Andreev reflection and the inter-band Kleintunneling couple electron-like and hole-like states through the action ofeither a superconducting (SC) pair potential or an electrostatic potential.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(SC)
###Quantum effects in graphitic materials: Colossal magnetoresistance, Andreev reflections, Little-Parks effect, ferromagnetism, and granular superconductivity|Nadina Gheorghiu,Charles R. Ebbing,Benjamin T. Pierce,Timothy J. Haugan###
(766364, 766367)
 In graphene, the Andreev reflection and the inter-band Kleintunneling couple electron-like and hole-like states through the action ofeither a superconducting (SC) pair potential or an electrostatic potential.
Featurization successful!
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SC
###Quantum effects in graphitic materials: Colossal magnetoresistance, Andreev reflections, Little-Parks effect, ferromagnetism, and granular superconductivity|Nadina Gheorghiu,Charles R. Ebbing,Benjamin T. Pierce,Timothy J. Haugan###
(766481, 766482)
 The observednegative nonlocal differential conductance Gdiff probes the Andreev reflectionat the walls of the SC grains coupled by Josephson effect through thesemiconducting matrix.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Quantum effects in graphitic materials: Colossal magnetoresistance, Andreev reflections, Little-Parks effect, ferromagnetism, and granular superconductivity|Nadina Gheorghiu,Charles R. Ebbing,Benjamin T. Pierce,Timothy J. Haugan###
(766504, 766504)
 In addition, Gdiff shows the butterfly shape that ischaracteristic to resistive random-access memory devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Quantum effects in graphitic materials: Colossal magnetoresistance, Andreev reflections, Little-Parks effect, ferromagnetism, and granular superconductivity|Nadina Gheorghiu,Charles R. Ebbing,Benjamin T. Pierce,Timothy J. Haugan###
(766539, 766539)
 In a magnetic field,the Andreev reflection counters the effect of the otherwise lowered conduction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Quantum effects in graphitic materials: Colossal magnetoresistance, Andreev reflections, Little-Parks effect, ferromagnetism, and granular superconductivity|Nadina Gheorghiu,Charles R. Ebbing,Benjamin T. Pierce,Timothy J. Haugan###
(766573, 766573)
At low temperatures, the magnetoresistance shows irreversible yet strongcolossal oscillations that are known to be quantum in nature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Quantum effects in graphitic materials: Colossal magnetoresistance, Andreev reflections, Little-Parks effect, ferromagnetism, and granular superconductivity|Nadina Gheorghiu,Charles R. Ebbing,Benjamin T. Pierce,Timothy J. Haugan###
(766614, 766614)
 In addition, wehave found evidence for seemingly granular SC as well as ferromagnetism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SC
###Quantum effects in graphitic materials: Colossal magnetoresistance, Andreev reflections, Little-Parks effect, ferromagnetism, and granular superconductivity|Nadina Gheorghiu,Charles R. Ebbing,Benjamin T. Pierce,Timothy J. Haugan###
(766634, 766635)
 In addition, wehave found evidence for seemingly granular SC as well as ferromagnetism.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Au
###Origins of magnetic field-dependent open-circuit voltage hysteresis driven by transverse charge current in ferromagnet/normal metal structures|Christos Tengeris###
(766786, 766786)
 Recent experimental work on Au thin films demonstrated signs of chargecurrent-induced spin polarization through open circuit voltage measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Origins of magnetic field-dependent open-circuit voltage hysteresis driven by transverse charge current in ferromagnet/normal metal structures|Christos Tengeris###
(766820, 766820)
 Inthis study, we are investigating the underlying mechanism(s) that induces thismeasured signal in the Au devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Au
###Origins of magnetic field-dependent open-circuit voltage hysteresis driven by transverse charge current in ferromagnet/normal metal structures|Christos Tengeris###
(766858, 766858)
 Inthis study, we are investigating the underlying mechanism(s) that induces thismeasured signal in the Au devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Au
###Origins of magnetic field-dependent open-circuit voltage hysteresis driven by transverse charge current in ferromagnet/normal metal structures|Christos Tengeris###
(766935, 766935)
 Thediscrepancy in the scaling of the measured signal as a function of thethickness of the Au thin film in the two cases is our key to differentiatebetween the two effects when compared to experimental data.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Origins of magnetic field-dependent open-circuit voltage hysteresis driven by transverse charge current in ferromagnet/normal metal structures|Christos Tengeris###
(767052, 767052)
 In addition, we study the magnetoresistance of the same Au samples,which reveal the presence of weak anti-localization (WAL) at low temperaturesfor the low-thickness samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Au
###Origins of magnetic field-dependent open-circuit voltage hysteresis driven by transverse charge current in ferromagnet/normal metal structures|Christos Tengeris###
(767071, 767071)
 In addition, we study the magnetoresistance of the same Au samples,which reveal the presence of weak anti-localization (WAL) at low temperaturesfor the low-thickness samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Origins of magnetic field-dependent open-circuit voltage hysteresis driven by transverse charge current in ferromagnet/normal metal structures|Christos Tengeris###
(767094, 767094)
 In addition, we study the magnetoresistance of the same Au samples,which reveal the presence of weak anti-localization (WAL) at low temperaturesfor the low-thickness samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Origins of magnetic field-dependent open-circuit voltage hysteresis driven by transverse charge current in ferromagnet/normal metal structures|Christos Tengeris###
(767149, 767149)
 More interestingly, it is revealed that the opencircuit voltage difference and magnetoresistance due to WAL<missing VAR> have very similarscaling with film thickness and temperature, suggesting the crucial importanceof spin-orbit interaction in understanding the phenomenon.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Magnetic-field-induced FM-AFM metamagnetic transition and strong negative magnetoresistance in Mn$_{1/4}$NbS$_2$ under pressure|S. Polesya,S. Mankovsky,P. G. Naumov,M. A. ElGhazali,W. Schnelle,S. Medvedev,S. Mangelsen,W. Bensch,H. Ebert###
(767213, 767213)
Magnetic-field-induced FM<missing VAR>-AFM<missing VAR> metamagnetic transition and strong negative magnetoresistance in Mn1/4NbS2 under pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 3, 'd', 2]

F
###Magnetic-field-induced FM-AFM metamagnetic transition and strong negative magnetoresistance in Mn$_{1/4}$NbS$_2$ under pressure|S. Polesya,S. Mankovsky,P. G. Naumov,M. A. ElGhazali,W. Schnelle,S. Medvedev,S. Mangelsen,W. Bensch,H. Ebert###
(767217, 767217)
Magnetic-field-induced FM<missing VAR>-AFM<missing VAR> metamagnetic transition and strong negative magnetoresistance in Mn1/4NbS2 under pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 3, 'd', 2]

Mn1
###Magnetic-field-induced FM-AFM metamagnetic transition and strong negative magnetoresistance in Mn$_{1/4}$NbS$_2$ under pressure|S. Polesya,S. Mankovsky,P. G. Naumov,M. A. ElGhazali,W. Schnelle,S. Medvedev,S. Mangelsen,W. Bensch,H. Ebert###
(767234, 767235)
Magnetic-field-induced FM<missing VAR>-AFM<missing VAR> metamagnetic transition and strong negative magnetoresistance in Mn1/4NbS2 under pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 3, 'd', 2]

NbS2
###Magnetic-field-induced FM-AFM metamagnetic transition and strong negative magnetoresistance in Mn$_{1/4}$NbS$_2$ under pressure|S. Polesya,S. Mankovsky,P. G. Naumov,M. A. ElGhazali,W. Schnelle,S. Medvedev,S. Mangelsen,W. Bensch,H. Ebert###
(767238, 767240)
Magnetic-field-induced FM<missing VAR>-AFM<missing VAR> metamagnetic transition and strong negative magnetoresistance in Mn1/4NbS2 under pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 3, 'd', 2]

C
###Magnetic-field-induced FM-AFM metamagnetic transition and strong negative magnetoresistance in Mn$_{1/4}$NbS$_2$ under pressure|S. Polesya,S. Mankovsky,P. G. Naumov,M. A. ElGhazali,W. Schnelle,S. Medvedev,S. Mangelsen,W. Bensch,H. Ebert###
(767257, 767257)
 Transition metal dichalcogenides (TMDC) stand out with their high chemicalstability and the possibility to incorporate a wide range of magnetic speciesbetween the layers.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 3, 'd', 1]

NbS2
###Magnetic-field-induced FM-AFM metamagnetic transition and strong negative magnetoresistance in Mn$_{1/4}$NbS$_2$ under pressure|S. Polesya,S. Mankovsky,P. G. Naumov,M. A. ElGhazali,W. Schnelle,S. Medvedev,S. Mangelsen,W. Bensch,H. Ebert###
(767379, 767381)
 Here, we study themagnetotransport properties of NbS2 intercalated with Mn, Mn1/4NbS2,demonstrating a complex behavior of the magnetoresistance and of the ordinaryand anomalous Hall resistivities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 3, 'd', 1]

Mn
###Magnetic-field-induced FM-AFM metamagnetic transition and strong negative magnetoresistance in Mn$_{1/4}$NbS$_2$ under pressure|S. Polesya,S. Mankovsky,P. G. Naumov,M. A. ElGhazali,W. Schnelle,S. Medvedev,S. Mangelsen,W. Bensch,H. Ebert###
(767387, 767387)
 Here, we study themagnetotransport properties of NbS2 intercalated with Mn, Mn1/4NbS2,demonstrating a complex behavior of the magnetoresistance and of the ordinaryand anomalous Hall resistivities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 3, 'd', 1]

Mn1
###Magnetic-field-induced FM-AFM metamagnetic transition and strong negative magnetoresistance in Mn$_{1/4}$NbS$_2$ under pressure|S. Polesya,S. Mankovsky,P. G. Naumov,M. A. ElGhazali,W. Schnelle,S. Medvedev,S. Mangelsen,W. Bensch,H. Ebert###
(767390, 767391)
 Here, we study themagnetotransport properties of NbS2 intercalated with Mn, Mn1/4NbS2,demonstrating a complex behavior of the magnetoresistance and of the ordinaryand anomalous Hall resistivities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 3, 'd', 1]

NbS2
###Magnetic-field-induced FM-AFM metamagnetic transition and strong negative magnetoresistance in Mn$_{1/4}$NbS$_2$ under pressure|S. Polesya,S. Mankovsky,P. G. Naumov,M. A. ElGhazali,W. Schnelle,S. Medvedev,S. Mangelsen,W. Bensch,H. Ebert###
(767394, 767396)
 Here, we study themagnetotransport properties of NbS2 intercalated with Mn, Mn1/4NbS2,demonstrating a complex behavior of the magnetoresistance and of the ordinaryand anomalous Hall resistivities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 3, 'd', 1]

Mn1
###Magnetic-field-induced FM-AFM metamagnetic transition and strong negative magnetoresistance in Mn$_{1/4}$NbS$_2$ under pressure|S. Polesya,S. Mankovsky,P. G. Naumov,M. A. ElGhazali,W. Schnelle,S. Medvedev,S. Mangelsen,W. Bensch,H. Ebert###
(767466, 767467)
 Application of pressure as tuning parameterleads to the drastic changes of the magnetotransport properties ofMn1/4NbS2 exhibiting large negative magnetoresistance up to 65 % at7.1 G<missing VAR>Pa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 3, 'd', 2]

NbS2
###Magnetic-field-induced FM-AFM metamagnetic transition and strong negative magnetoresistance in Mn$_{1/4}$NbS$_2$ under pressure|S. Polesya,S. Mankovsky,P. G. Naumov,M. A. ElGhazali,W. Schnelle,S. Medvedev,S. Mangelsen,W. Bensch,H. Ebert###
(767470, 767472)
 Application of pressure as tuning parameterleads to the drastic changes of the magnetotransport properties ofMn1/4NbS2 exhibiting large negative magnetoresistance up to 65 % at7.1 G<missing VAR>Pa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 3, 'd', 2]

Pa
###Magnetic-field-induced FM-AFM metamagnetic transition and strong negative magnetoresistance in Mn$_{1/4}$NbS$_2$ under pressure|S. Polesya,S. Mankovsky,P. G. Naumov,M. A. ElGhazali,W. Schnelle,S. Medvedev,S. Mangelsen,W. Bensch,H. Ebert###
(767496, 767496)
 Application of pressure as tuning parameterleads to the drastic changes of the magnetotransport properties ofMn1/4NbS2 exhibiting large negative magnetoresistance up to 65 % at7.1 G<missing VAR>Pa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0
[171.0, 3, 'd', 2]

Mn1
###Magnetic-field-induced FM-AFM metamagnetic transition and strong negative magnetoresistance in Mn$_{1/4}$NbS$_2$ under pressure|S. Polesya,S. Mankovsky,P. G. Naumov,M. A. ElGhazali,W. Schnelle,S. Medvedev,S. Mangelsen,W. Bensch,H. Ebert###
(767551, 767552)
Theoretical calculations accounting for the finite temperature magneticproperties of Mn1/4NbS2 suggest a field-induced metamagneticferromagnetic-antiferromagnetic transition as an origin of the large negativemagentoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[226.0, 3, 'd', 4]

NbS2
###Magnetic-field-induced FM-AFM metamagnetic transition and strong negative magnetoresistance in Mn$_{1/4}$NbS$_2$ under pressure|S. Polesya,S. Mankovsky,P. G. Naumov,M. A. ElGhazali,W. Schnelle,S. Medvedev,S. Mangelsen,W. Bensch,H. Ebert###
(767555, 767557)
Theoretical calculations accounting for the finite temperature magneticproperties of Mn1/4NbS2 suggest a field-induced metamagneticferromagnetic-antiferromagnetic transition as an origin of the large negativemagentoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[230.0, 3, 'd', 4]

C
###Magnetic-field-induced FM-AFM metamagnetic transition and strong negative magnetoresistance in Mn$_{1/4}$NbS$_2$ under pressure|S. Polesya,S. Mankovsky,P. G. Naumov,M. A. ElGhazali,W. Schnelle,S. Medvedev,S. Mangelsen,W. Bensch,H. Ebert###
(767624, 767624)
 These results inspire the development of materials forspintronic applications based on intercalated TMDC with a well controllablemetamagnetic transition.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[299.0, 3, 'd', 5]

Mn3Sn
###Interaction and temperature effects on the magneto-optical conductivity of Weyl liquids|S. Acheche,R. Nourafkan,J. Padayasi,N. Martin,A. -M. S. Tremblay###
(767835, 767837)
 Such an interacting Weyl semimetal, dubbed as Weylliquid, may be realized in Mn3Sn.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Interaction and temperature effects on the magneto-optical conductivity of Weyl liquids|S. Acheche,R. Nourafkan,J. Padayasi,N. Martin,A. -M. S. Tremblay###
(767971, 767971)
 The negative magnetoresistance still exists, even thoughthe slope of the linear dependence of the D<missing VAR>C conductivity with respect to themagnetic filed is decreased by the interaction.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Interaction and temperature effects on the magneto-optical conductivity of Weyl liquids|S. Acheche,R. Nourafkan,J. Padayasi,N. Martin,A. -M. S. Tremblay###
(767999, 767999)
 At elevated temperatures, aWeyl liquid crossesover to bad metallic behavior where the Drude peak becomesflat and featureless.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magnetoresistance oscillations in multilayer systems - triple quantum wells|S. Wiedmann,N. C. Mamani,G. M. Gusev,O. E. Raichev,A. K. Bakarov,J. C. Portal###
(768123, 768123)
 In addition toprevious investigations of these magneto-intersubband (M<missing VAR>IS) oscillations intwo-subband systems, we report on both experimental and theoretical studies ofsuch a phenomenon in three-subband systems realized in triple quantum wells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Magnetoresistance oscillations in multilayer systems - triple quantum wells|S. Wiedmann,N. C. Mamani,G. M. Gusev,O. E. Raichev,A. K. Bakarov,J. C. Portal###
(768145, 768145)
 In addition toprevious investigations of these magneto-intersubband (M<missing VAR>IS) oscillations intwo-subband systems, we report on both experimental and theoretical studies ofsuch a phenomenon in three-subband systems realized in triple quantum wells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

IS
###Magnetoresistance oscillations in multilayer systems - triple quantum wells|S. Wiedmann,N. C. Mamani,G. M. Gusev,O. E. Raichev,A. K. Bakarov,J. C. Portal###
(768237, 768238)
 Weshow that the presence of more than two subbands leads to a qualitativelydifferent M<missing VAR>IS oscillation picture, described as a superposition of severaloscillating contributions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

IS
###Magnetoresistance oscillations in multilayer systems - triple quantum wells|S. Wiedmann,N. C. Mamani,G. M. Gusev,O. E. Raichev,A. K. Bakarov,J. C. Portal###
(768296, 768297)
 Under a continuous microwave irradiation, themagnetoresistance of triple-well systems exhibits an interference of M<missing VAR>ISoscillations and microwaveinduced resistance oscillations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###The tunnel magnetoresistance in chains of quantum dots weakly coupled to external leads|Ireneusz Weymann###
(768508, 768508)
 Inparticular, using the diagrammatic technique on the Keldysh contour, wecalculate the conductance, shot noise and tunnel magnetoresistance (TMR) in thesequential and cotunneling regimes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###The tunnel magnetoresistance in chains of quantum dots weakly coupled to external leads|Ireneusz Weymann###
(768700, 768700)
When the correlations are relatively strong, depending on the transport regime,we find both negative TMR as well as TMR enhanced above the Julliere value,accompanied with negative differential conductance (ND<missing VAR>C) and super-Poissonianshot noise.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###The tunnel magnetoresistance in chains of quantum dots weakly coupled to external leads|Ireneusz Weymann###
(768702, 768702)
When the correlations are relatively strong, depending on the transport regime,we find both negative TMR as well as TMR enhanced above the Julliere value,accompanied with negative differential conductance (ND<missing VAR>C) and super-Poissonianshot noise.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###The tunnel magnetoresistance in chains of quantum dots weakly coupled to external leads|Ireneusz Weymann###
(768837, 768837)
 For weak interdotcorrelations, on the other hand, the TMR is always positive and not larger thanthe Julliere TMR, although super-Poissonian shot noise and ND<missing VAR>C can still beobserved.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###The tunnel magnetoresistance in chains of quantum dots weakly coupled to external leads|Ireneusz Weymann###
(768839, 768839)
 For weak interdotcorrelations, on the other hand, the TMR is always positive and not larger thanthe Julliere TMR, although super-Poissonian shot noise and ND<missing VAR>C can still beobserved.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiFe
###Inverse Spin Hall Effect in NiFe / Normal Metal Bilayers|M. Obstbaum,M. Härtinger,T. Meier,F. Swientek,C. H. Back,G. Woltersdorf###
(768869, 768870)
Inverse Spin Hall Effect in NiFe / Normal Metal Bilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[354.0, 0.09, 'and', 7],[355.0, 0.008, 'respectively', 7]

C
###Inverse Spin Hall Effect in NiFe / Normal Metal Bilayers|M. Obstbaum,M. Härtinger,T. Meier,F. Swientek,C. H. Back,G. Woltersdorf###
(768945, 768945)
 Via theinverse spin Hall effect a spin current is converted into a charge current anda corresponding detectable D<missing VAR>C-voltage.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[279.0, 0.09, 'and', 5],[280.0, 0.008, 'respectively', 5]

Fe
###Inverse Spin Hall Effect in NiFe / Normal Metal Bilayers|M. Obstbaum,M. Härtinger,T. Meier,F. Swientek,C. H. Back,G. Woltersdorf###
(769078, 769078)
 This publicationprovides a full study of inverse spin Hall effect and anisotropicmagnetoresistance for different NiFe(Py) / normal metal bilayers using acoplanar waveguide structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 0.09, 'and', 2],[147.0, 0.008, 'respectively', 2]

Pt
###Inverse Spin Hall Effect in NiFe / Normal Metal Bilayers|M. Obstbaum,M. Härtinger,T. Meier,F. Swientek,C. H. Back,G. Woltersdorf###
(769206, 769206)
 Ruling out theanisotropic magnetoresistance as a parasitic voltage generating effectmeasurements of the inverse spin Hall effect in Py/Pt and Py/Au yield spin Hallangles of 0.09 and 0.008 respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 0.09, 'and', 0],[19.0, 0.008, 'respectively', 0]

Au
###Inverse Spin Hall Effect in NiFe / Normal Metal Bilayers|M. Obstbaum,M. Härtinger,T. Meier,F. Swientek,C. H. Back,G. Woltersdorf###
(769212, 769212)
 Ruling out theanisotropic magnetoresistance as a parasitic voltage generating effectmeasurements of the inverse spin Hall effect in Py/Pt and Py/Au yield spin Hallangles of 0.09 and 0.008 respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 0.09, 'and', 0],[13.0, 0.008, 'respectively', 0]

C
###Inverse Spin Hall Effect in NiFe / Normal Metal Bilayers|M. Obstbaum,M. Härtinger,T. Meier,F. Swientek,C. H. Back,G. Woltersdorf###
(769232, 769232)
 Furthermore, D<missing VAR>C-voltages atferromagnetic resonance for Py/Pt are studied as a function of temperature andthe results are compared to theoretical models.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 0.09, 'and', 1],[7.0, 0.008, 'respectively', 1]

Pt
###Inverse Spin Hall Effect in NiFe / Normal Metal Bilayers|M. Obstbaum,M. Härtinger,T. Meier,F. Swientek,C. H. Back,G. Woltersdorf###
(769247, 769247)
 Furthermore, D<missing VAR>C-voltages atferromagnetic resonance for Py/Pt are studied as a function of temperature andthe results are compared to theoretical models.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 0.09, 'and', 1],[22.0, 0.008, 'respectively', 1]

Pt
###Comment on "Pt magnetic polarization on Y3Fe5O12 and magnetotransport characteristics"|Stephan Geprägs,Sebastian T. B. Goennenwein,Marc Schneider,Fabrice Wilhelm,Katharina Ollefs,Andrei Rogalev,Matthias Opel,Rudolf Gross###
(769293, 769293)
Comment on Pt magnetic polarization on Y3Fe5O12 and magnetotransport characteristics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 110, ',', 7],[275.0, 2, ',', 12],[306.0, 1.5, 'nm', 12],[324.0, 0.054, 'Bohr', 12],[389.0, 3, ',', 13],[392.0, 7, ',', 13],[396.0, 10, 'nm', 13],[452.0, 101, ',', 17]

Y3Fe5O12
###Comment on "Pt magnetic polarization on Y3Fe5O12 and magnetotransport characteristics"|Stephan Geprägs,Sebastian T. B. Goennenwein,Marc Schneider,Fabrice Wilhelm,Katharina Ollefs,Andrei Rogalev,Matthias Opel,Rudolf Gross###
(769301, 769306)
Comment on Pt magnetic polarization on Y3Fe5O12 and magnetotransport characteristics.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 110, ',', 7],[262.0, 2, ',', 12],[293.0, 1.5, 'nm', 12],[311.0, 0.054, 'Bohr', 12],[376.0, 3, ',', 13],[379.0, 7, ',', 13],[383.0, 10, 'nm', 13],[439.0, 101, ',', 17]

In
###Comment on "Pt magnetic polarization on Y3Fe5O12 and magnetotransport characteristics"|Stephan Geprägs,Sebastian T. B. Goennenwein,Marc Schneider,Fabrice Wilhelm,Katharina Ollefs,Andrei Rogalev,Matthias Opel,Rudolf Gross###
(769315, 769315)
 In a recent Letter [Y.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 110, ',', 6],[253.0, 2, ',', 11],[284.0, 1.5, 'nm', 11],[302.0, 0.054, 'Bohr', 11],[367.0, 3, ',', 12],[370.0, 7, ',', 12],[374.0, 10, 'nm', 12],[430.0, 101, ',', 16]

Y
###Comment on "Pt magnetic polarization on Y3Fe5O12 and magnetotransport characteristics"|Stephan Geprägs,Sebastian T. B. Goennenwein,Marc Schneider,Fabrice Wilhelm,Katharina Ollefs,Andrei Rogalev,Matthias Opel,Rudolf Gross###
(769324, 769324)
 In a recent Letter [Y.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 110, ',', 6],[244.0, 2, ',', 11],[275.0, 1.5, 'nm', 11],[293.0, 0.054, 'Bohr', 11],[358.0, 3, ',', 12],[361.0, 7, ',', 12],[365.0, 10, 'nm', 12],[421.0, 101, ',', 16]

Lu
###Comment on "Pt magnetic polarization on Y3Fe5O12 and magnetotransport characteristics"|Stephan Geprägs,Sebastian T. B. Goennenwein,Marc Schneider,Fabrice Wilhelm,Katharina Ollefs,Andrei Rogalev,Matthias Opel,Rudolf Gross###
(769329, 769329)
 Lu et al.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 110, ',', 4],[239.0, 2, ',', 9],[270.0, 1.5, 'nm', 9],[288.0, 0.054, 'Bohr', 9],[353.0, 3, ',', 10],[356.0, 7, ',', 10],[360.0, 10, 'nm', 10],[416.0, 101, ',', 14]

Lu
###Comment on "Pt magnetic polarization on Y3Fe5O12 and magnetotransport characteristics"|Stephan Geprägs,Sebastian T. B. Goennenwein,Marc Schneider,Fabrice Wilhelm,Katharina Ollefs,Andrei Rogalev,Matthias Opel,Rudolf Gross###
(769357, 769357)
 110, 147207 (2013)], Luet al.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 110, ',', 0],[211.0, 2, ',', 5],[242.0, 1.5, 'nm', 5],[260.0, 0.054, 'Bohr', 5],[325.0, 3, ',', 6],[328.0, 7, ',', 6],[332.0, 10, 'nm', 6],[388.0, 101, ',', 10]

Pt
###Comment on "Pt magnetic polarization on Y3Fe5O12 and magnetotransport characteristics"|Stephan Geprägs,Sebastian T. B. Goennenwein,Marc Schneider,Fabrice Wilhelm,Katharina Ollefs,Andrei Rogalev,Matthias Opel,Rudolf Gross###
(769384, 769384)
 reported on ferromagneticlike transport properties of thin films ofPt, deposited ex situ via sputtering on the ferrimagnetic insulator Y3Fe5O12.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 110, ',', 1],[184.0, 2, ',', 4],[215.0, 1.5, 'nm', 4],[233.0, 0.054, 'Bohr', 4],[298.0, 3, ',', 5],[301.0, 7, ',', 5],[305.0, 10, 'nm', 5],[361.0, 101, ',', 9]

Y3Fe5O12
###Comment on "Pt magnetic polarization on Y3Fe5O12 and magnetotransport characteristics"|Stephan Geprägs,Sebastian T. B. Goennenwein,Marc Schneider,Fabrice Wilhelm,Katharina Ollefs,Andrei Rogalev,Matthias Opel,Rudolf Gross###
(769405, 769410)
 reported on ferromagneticlike transport properties of thin films ofPt, deposited ex situ via sputtering on the ferrimagnetic insulator Y3Fe5O12.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 110, ',', 1],[158.0, 2, ',', 4],[189.0, 1.5, 'nm', 4],[207.0, 0.054, 'Bohr', 4],[272.0, 3, ',', 5],[275.0, 7, ',', 5],[279.0, 10, 'nm', 5],[335.0, 101, ',', 9]

Pt
###Comment on "Pt magnetic polarization on Y3Fe5O12 and magnetotransport characteristics"|Stephan Geprägs,Sebastian T. B. Goennenwein,Marc Schneider,Fabrice Wilhelm,Katharina Ollefs,Andrei Rogalev,Matthias Opel,Rudolf Gross###
(769426, 769426)
The authors found a magnetoresistance in Pt displaying a hysteresiscorresponding to the coercive field of Y3Fe5O12, consistent with the findingsof other groups.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 110, ',', 2],[142.0, 2, ',', 3],[173.0, 1.5, 'nm', 3],[191.0, 0.054, 'Bohr', 3],[256.0, 3, ',', 4],[259.0, 7, ',', 4],[263.0, 10, 'nm', 4],[319.0, 101, ',', 8]

Y3Fe5O12
###Comment on "Pt magnetic polarization on Y3Fe5O12 and magnetotransport characteristics"|Stephan Geprägs,Sebastian T. B. Goennenwein,Marc Schneider,Fabrice Wilhelm,Katharina Ollefs,Andrei Rogalev,Matthias Opel,Rudolf Gross###
(769447, 769452)
The authors found a magnetoresistance in Pt displaying a hysteresiscorresponding to the coercive field of Y3Fe5O12, consistent with the findingsof other groups.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 110, ',', 2],[116.0, 2, ',', 3],[147.0, 1.5, 'nm', 3],[165.0, 0.054, 'Bohr', 3],[230.0, 3, ',', 4],[233.0, 7, ',', 4],[237.0, 10, 'nm', 4],[293.0, 101, ',', 8]

Lu
###Comment on "Pt magnetic polarization on Y3Fe5O12 and magnetotransport characteristics"|Stephan Geprägs,Sebastian T. B. Goennenwein,Marc Schneider,Fabrice Wilhelm,Katharina Ollefs,Andrei Rogalev,Matthias Opel,Rudolf Gross###
(769503, 769503)
 While the latter interpreted their data in terms of therecently proposed spin-Hall magnetoresistance, Lu et al.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 110, ',', 3],[65.0, 2, ',', 2],[96.0, 1.5, 'nm', 2],[114.0, 0.054, 'Bohr', 2],[179.0, 3, ',', 3],[182.0, 7, ',', 3],[186.0, 10, 'nm', 3],[242.0, 101, ',', 7]

C
###Comment on "Pt magnetic polarization on Y3Fe5O12 and magnetotransport characteristics"|Stephan Geprägs,Sebastian T. B. Goennenwein,Marc Schneider,Fabrice Wilhelm,Katharina Ollefs,Andrei Rogalev,Matthias Opel,Rudolf Gross###
(769557, 769557)
 To support this interpretation,they measured the X<missing VAR>-ray magnetic circular dichroism (XMCD) at the Pt L<missing VAR>2,3 edgesfrom a Pt/Y3Fe5O12 sample with a Pt thickness of 1.5 nm and derived an averageinduced magnetic moment of 0.054 Bohr magnetons per Pt atom.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[211.0, 110, ',', 5],[11.0, 2, ',', 0],[42.0, 1.5, 'nm', 0],[60.0, 0.054, 'Bohr', 0],[125.0, 3, ',', 1],[128.0, 7, ',', 1],[132.0, 10, 'nm', 1],[188.0, 101, ',', 5]

Pt
###Comment on "Pt magnetic polarization on Y3Fe5O12 and magnetotransport characteristics"|Stephan Geprägs,Sebastian T. B. Goennenwein,Marc Schneider,Fabrice Wilhelm,Katharina Ollefs,Andrei Rogalev,Matthias Opel,Rudolf Gross###
(769565, 769565)
 To support this interpretation,they measured the X<missing VAR>-ray magnetic circular dichroism (XMCD) at the Pt L<missing VAR>2,3 edgesfrom a Pt/Y3Fe5O12 sample with a Pt thickness of 1.5 nm and derived an averageinduced magnetic moment of 0.054 Bohr magnetons per Pt atom.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[219.0, 110, ',', 5],[3.0, 2, ',', 0],[34.0, 1.5, 'nm', 0],[52.0, 0.054, 'Bohr', 0],[117.0, 3, ',', 1],[120.0, 7, ',', 1],[124.0, 10, 'nm', 1],[180.0, 101, ',', 5]

Pt/Y3Fe5O12
###Comment on "Pt magnetic polarization on Y3Fe5O12 and magnetotransport characteristics"|Stephan Geprägs,Sebastian T. B. Goennenwein,Marc Schneider,Fabrice Wilhelm,Katharina Ollefs,Andrei Rogalev,Matthias Opel,Rudolf Gross###
(769579, 769586)
 To support this interpretation,they measured the X<missing VAR>-ray magnetic circular dichroism (XMCD) at the Pt L<missing VAR>2,3 edgesfrom a Pt/Y3Fe5O12 sample with a Pt thickness of 1.5 nm and derived an averageinduced magnetic moment of 0.054 Bohr magnetons per Pt atom.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[233.0, 110, ',', 5],[11.0, 2, ',', 0],[13.0, 1.5, 'nm', 0],[31.0, 0.054, 'Bohr', 0],[96.0, 3, ',', 1],[99.0, 7, ',', 1],[103.0, 10, 'nm', 1],[159.0, 101, ',', 5]

Pt
###Comment on "Pt magnetic polarization on Y3Fe5O12 and magnetotransport characteristics"|Stephan Geprägs,Sebastian T. B. Goennenwein,Marc Schneider,Fabrice Wilhelm,Katharina Ollefs,Andrei Rogalev,Matthias Opel,Rudolf Gross###
(769594, 769594)
 To support this interpretation,they measured the X<missing VAR>-ray magnetic circular dichroism (XMCD) at the Pt L<missing VAR>2,3 edgesfrom a Pt/Y3Fe5O12 sample with a Pt thickness of 1.5 nm and derived an averageinduced magnetic moment of 0.054 Bohr magnetons per Pt atom.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[248.0, 110, ',', 5],[26.0, 2, ',', 0],[5.0, 1.5, 'nm', 0],[23.0, 0.054, 'Bohr', 0],[88.0, 3, ',', 1],[91.0, 7, ',', 1],[95.0, 10, 'nm', 1],[151.0, 101, ',', 5]

Pt
###Comment on "Pt magnetic polarization on Y3Fe5O12 and magnetotransport characteristics"|Stephan Geprägs,Sebastian T. B. Goennenwein,Marc Schneider,Fabrice Wilhelm,Katharina Ollefs,Andrei Rogalev,Matthias Opel,Rudolf Gross###
(769623, 769623)
 To support this interpretation,they measured the X<missing VAR>-ray magnetic circular dichroism (XMCD) at the Pt L<missing VAR>2,3 edgesfrom a Pt/Y3Fe5O12 sample with a Pt thickness of 1.5 nm and derived an averageinduced magnetic moment of 0.054 Bohr magnetons per Pt atom.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[277.0, 110, ',', 5],[55.0, 2, ',', 0],[24.0, 1.5, 'nm', 0],[6.0, 0.054, 'Bohr', 0],[59.0, 3, ',', 1],[62.0, 7, ',', 1],[66.0, 10, 'nm', 1],[122.0, 101, ',', 5]

C
###Comment on "Pt magnetic polarization on Y3Fe5O12 and magnetotransport characteristics"|Stephan Geprägs,Sebastian T. B. Goennenwein,Marc Schneider,Fabrice Wilhelm,Katharina Ollefs,Andrei Rogalev,Matthias Opel,Rudolf Gross###
(769651, 769651)
 This iscontradictory to the results of our previous comprehensive XMCD<missing VAR> study of threedifferent Pt/Y3Fe5O12 samples with Pt thicknesses of 3, 7, and 10 nm from whichwe identified an upper limit of (0.003 /- 0.001) Bohr magnetons per Pt[Geprags et al.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[305.0, 110, ',', 6],[83.0, 2, ',', 1],[52.0, 1.5, 'nm', 1],[34.0, 0.054, 'Bohr', 1],[31.0, 3, ',', 0],[34.0, 7, ',', 0],[38.0, 10, 'nm', 0],[94.0, 101, ',', 4]

Pt/Y3Fe5O12
###Comment on "Pt magnetic polarization on Y3Fe5O12 and magnetotransport characteristics"|Stephan Geprägs,Sebastian T. B. Goennenwein,Marc Schneider,Fabrice Wilhelm,Katharina Ollefs,Andrei Rogalev,Matthias Opel,Rudolf Gross###
(769663, 769670)
 This iscontradictory to the results of our previous comprehensive XMCD<missing VAR> study of threedifferent Pt/Y3Fe5O12 samples with Pt thicknesses of 3, 7, and 10 nm from whichwe identified an upper limit of (0.003 /- 0.001) Bohr magnetons per Pt[Geprags et al.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[317.0, 110, ',', 6],[95.0, 2, ',', 1],[64.0, 1.5, 'nm', 1],[46.0, 0.054, 'Bohr', 1],[12.0, 3, ',', 0],[15.0, 7, ',', 0],[19.0, 10, 'nm', 0],[75.0, 101, ',', 4]

Pt
###Comment on "Pt magnetic polarization on Y3Fe5O12 and magnetotransport characteristics"|Stephan Geprägs,Sebastian T. B. Goennenwein,Marc Schneider,Fabrice Wilhelm,Katharina Ollefs,Andrei Rogalev,Matthias Opel,Rudolf Gross###
(769676, 769676)
 This iscontradictory to the results of our previous comprehensive XMCD<missing VAR> study of threedifferent Pt/Y3Fe5O12 samples with Pt thicknesses of 3, 7, and 10 nm from whichwe identified an upper limit of (0.003 /- 0.001) Bohr magnetons per Pt[Geprags et al.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[330.0, 110, ',', 6],[108.0, 2, ',', 1],[77.0, 1.5, 'nm', 1],[59.0, 0.054, 'Bohr', 1],[6.0, 3, ',', 0],[9.0, 7, ',', 0],[13.0, 10, 'nm', 0],[69.0, 101, ',', 4]

Pt
###Comment on "Pt magnetic polarization on Y3Fe5O12 and magnetotransport characteristics"|Stephan Geprägs,Sebastian T. B. Goennenwein,Marc Schneider,Fabrice Wilhelm,Katharina Ollefs,Andrei Rogalev,Matthias Opel,Rudolf Gross###
(769723, 769723)
 This iscontradictory to the results of our previous comprehensive XMCD<missing VAR> study of threedifferent Pt/Y3Fe5O12 samples with Pt thicknesses of 3, 7, and 10 nm from whichwe identified an upper limit of (0.003 /- 0.001) Bohr magnetons per Pt[Geprags et al.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[377.0, 110, ',', 6],[155.0, 2, ',', 1],[124.0, 1.5, 'nm', 1],[106.0, 0.054, 'Bohr', 1],[41.0, 3, ',', 0],[38.0, 7, ',', 0],[34.0, 10, 'nm', 0],[22.0, 101, ',', 4]

NaFeAs
###Anisotropic Electronic Mobilities in the Nematic State of the Parent Phase NaFeAs|Qiang Deng,Jie Xing,Jianzhong Liu,Huan Yang,Hai-Hu Wen###
(769791, 769793)
Anisotropic Electronic Mobilities in the Nematic State of the Parent Phase NaFeAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NaFeAs
###Anisotropic Electronic Mobilities in the Nematic State of the Parent Phase NaFeAs|Qiang Deng,Jie Xing,Jianzhong Liu,Huan Yang,Hai-Hu Wen###
(769825, 769827)
 Hall effect and magnetoresistance have been measured on single crystals ofthe parent phase NaFeAs under a uniaxial pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Anisotropic Electronic Mobilities in the Nematic State of the Parent Phase NaFeAs|Qiang Deng,Jie Xing,Jianzhong Liu,Huan Yang,Hai-Hu Wen###
(769858, 769858)
 Although significantdifference of the in-plane resistivity rhoxx(Iparallel a) andrhoxx(Iparallel b) with the uniaxial pressure along b<missing VAR>-axis wasobserved, the transverse resistivity rhoxy shows a surprisingly isotropicbehavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Anisotropic Electronic Mobilities in the Nematic State of the Parent Phase NaFeAs|Qiang Deng,Jie Xing,Jianzhong Liu,Huan Yang,Hai-Hu Wen###
(769870, 769870)
 Although significantdifference of the in-plane resistivity rhoxx(Iparallel a) andrhoxx(Iparallel b) with the uniaxial pressure along b<missing VAR>-axis wasobserved, the transverse resistivity rhoxy shows a surprisingly isotropicbehavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Anisotropic Electronic Mobilities in the Nematic State of the Parent Phase NaFeAs|Qiang Deng,Jie Xing,Jianzhong Liu,Huan Yang,Hai-Hu Wen###
(769933, 769933)
 Detailed analysis reveals that the Hall coefficient R<missing VAR>mathrmHmeasured in the two orthogonal configurations (Iparallel a-axis andIparallel b<missing VAR>-axis) coincide very well and exhibit a deviation from the hightemperature background at around the structural transition temperatureTmathrms.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Anisotropic Electronic Mobilities in the Nematic State of the Parent Phase NaFeAs|Qiang Deng,Jie Xing,Jianzhong Liu,Huan Yang,Hai-Hu Wen###
(769949, 769949)
 Detailed analysis reveals that the Hall coefficient R<missing VAR>mathrmHmeasured in the two orthogonal configurations (Iparallel a-axis andIparallel b<missing VAR>-axis) coincide very well and exhibit a deviation from the hightemperature background at around the structural transition temperatureTmathrms.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Anisotropic Electronic Mobilities in the Nematic State of the Parent Phase NaFeAs|Qiang Deng,Jie Xing,Jianzhong Liu,Huan Yang,Hai-Hu Wen###
(769959, 769959)
 Detailed analysis reveals that the Hall coefficient R<missing VAR>mathrmHmeasured in the two orthogonal configurations (Iparallel a-axis andIparallel b<missing VAR>-axis) coincide very well and exhibit a deviation from the hightemperature background at around the structural transition temperatureTmathrms.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Anisotropic Electronic Mobilities in the Nematic State of the Parent Phase NaFeAs|Qiang Deng,Jie Xing,Jianzhong Liu,Huan Yang,Hai-Hu Wen###
(770021, 770021)
 Furthermore, the magnitude of R<missing VAR>mathrmH increasesremarkably below the structural transition temperature.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Negative Magnetoresistance in Topological Semimetals of Transition-Metal Dipnictides with Nontrivial Z2 Indices|Yupeng Li,Zhen Wang,Yunhao Lu,Xiaojun Yang,Zhixuan Shen,Feng Sheng,Chunmu Feng,Yi Zheng,Zhu-An Xu###
(770246, 770246)
 Negative magnetoresistance (NMR) induced by the Adler-Bell-Jackiw anomaly isregarded as the most prominent quantum signature of Weyl semimetals whenelectrical field E<missing VAR> is collinear with the external magnetic field B.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[395.0, 0, ';', 4]

B
###Negative Magnetoresistance in Topological Semimetals of Transition-Metal Dipnictides with Nontrivial Z2 Indices|Yupeng Li,Zhen Wang,Yunhao Lu,Xiaojun Yang,Zhixuan Shen,Feng Sheng,Chunmu Feng,Yi Zheng,Zhu-An Xu###
(770311, 770311)
 Negative magnetoresistance (NMR) induced by the Adler-Bell-Jackiw anomaly isregarded as the most prominent quantum signature of Weyl semimetals whenelectrical field E<missing VAR> is collinear with the external magnetic field B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[330.0, 0, ';', 4]

In
###Negative Magnetoresistance in Topological Semimetals of Transition-Metal Dipnictides with Nontrivial Z2 Indices|Yupeng Li,Zhen Wang,Yunhao Lu,Xiaojun Yang,Zhixuan Shen,Feng Sheng,Chunmu Feng,Yi Zheng,Zhu-An Xu###
(770314, 770314)
 In thisarticle, we report universal NMR in nonmagnetic, centrosymmetric transitionmetal dipnictides M<missing VAR>Pn2 (M<missing VAR>Nb and Ta; PnAs and Sb), in which the existenceof Weyl fermions can be explicitly excluded.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[327.0, 0, ';', 3]

N
###Negative Magnetoresistance in Topological Semimetals of Transition-Metal Dipnictides with Nontrivial Z2 Indices|Yupeng Li,Zhen Wang,Yunhao Lu,Xiaojun Yang,Zhixuan Shen,Feng Sheng,Chunmu Feng,Yi Zheng,Zhu-An Xu###
(770328, 770328)
 In thisarticle, we report universal NMR in nonmagnetic, centrosymmetric transitionmetal dipnictides M<missing VAR>Pn2 (M<missing VAR>Nb and Ta; PnAs and Sb), in which the existenceof Weyl fermions can be explicitly excluded.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[313.0, 0, ';', 3]

Nb
###Negative Magnetoresistance in Topological Semimetals of Transition-Metal Dipnictides with Nontrivial Z2 Indices|Yupeng Li,Zhen Wang,Yunhao Lu,Xiaojun Yang,Zhixuan Shen,Feng Sheng,Chunmu Feng,Yi Zheng,Zhu-An Xu###
(770352, 770352)
 In thisarticle, we report universal NMR in nonmagnetic, centrosymmetric transitionmetal dipnictides M<missing VAR>Pn2 (M<missing VAR>Nb and Ta; PnAs and Sb), in which the existenceof Weyl fermions can be explicitly excluded.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[289.0, 0, ';', 3]

Ta
###Negative Magnetoresistance in Topological Semimetals of Transition-Metal Dipnictides with Nontrivial Z2 Indices|Yupeng Li,Zhen Wang,Yunhao Lu,Xiaojun Yang,Zhixuan Shen,Feng Sheng,Chunmu Feng,Yi Zheng,Zhu-An Xu###
(770356, 770356)
 In thisarticle, we report universal NMR in nonmagnetic, centrosymmetric transitionmetal dipnictides M<missing VAR>Pn2 (M<missing VAR>Nb and Ta; PnAs and Sb), in which the existenceof Weyl fermions can be explicitly excluded.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[285.0, 0, ';', 3]

As
###Negative Magnetoresistance in Topological Semimetals of Transition-Metal Dipnictides with Nontrivial Z2 Indices|Yupeng Li,Zhen Wang,Yunhao Lu,Xiaojun Yang,Zhixuan Shen,Feng Sheng,Chunmu Feng,Yi Zheng,Zhu-An Xu###
(770360, 770360)
 In thisarticle, we report universal NMR in nonmagnetic, centrosymmetric transitionmetal dipnictides M<missing VAR>Pn2 (M<missing VAR>Nb and Ta; PnAs and Sb), in which the existenceof Weyl fermions can be explicitly excluded.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[281.0, 0, ';', 3]

Sb
###Negative Magnetoresistance in Topological Semimetals of Transition-Metal Dipnictides with Nontrivial Z2 Indices|Yupeng Li,Zhen Wang,Yunhao Lu,Xiaojun Yang,Zhixuan Shen,Feng Sheng,Chunmu Feng,Yi Zheng,Zhu-An Xu###
(770364, 770364)
 In thisarticle, we report universal NMR in nonmagnetic, centrosymmetric transitionmetal dipnictides M<missing VAR>Pn2 (M<missing VAR>Nb and Ta; PnAs and Sb), in which the existenceof Weyl fermions can be explicitly excluded.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[277.0, 0, ';', 3]

N
###Negative Magnetoresistance in Topological Semimetals of Transition-Metal Dipnictides with Nontrivial Z2 Indices|Yupeng Li,Zhen Wang,Yunhao Lu,Xiaojun Yang,Zhixuan Shen,Feng Sheng,Chunmu Feng,Yi Zheng,Zhu-An Xu###
(770436, 770436)
 Using temperature-dependentmagnetoresistance, Hall and thermoelectric coefficients of Nernst and Seebeckeffects, we determine that the emergence of the NMR phenomena in M<missing VAR>Pn2 iscoincident with a Lifshitz transition, corresponding to the formation of uniqueelectron-hole-electron (e-h-e) pockets along the I-L<missing VAR>-I direction.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, 0, ';', 2]

I
###Negative Magnetoresistance in Topological Semimetals of Transition-Metal Dipnictides with Nontrivial Z2 Indices|Yupeng Li,Zhen Wang,Yunhao Lu,Xiaojun Yang,Zhixuan Shen,Feng Sheng,Chunmu Feng,Yi Zheng,Zhu-An Xu###
(770495, 770495)
 Using temperature-dependentmagnetoresistance, Hall and thermoelectric coefficients of Nernst and Seebeckeffects, we determine that the emergence of the NMR phenomena in M<missing VAR>Pn2 iscoincident with a Lifshitz transition, corresponding to the formation of uniqueelectron-hole-electron (e-h-e) pockets along the I-L<missing VAR>-I direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 0, ';', 2]

I
###Negative Magnetoresistance in Topological Semimetals of Transition-Metal Dipnictides with Nontrivial Z2 Indices|Yupeng Li,Zhen Wang,Yunhao Lu,Xiaojun Yang,Zhixuan Shen,Feng Sheng,Chunmu Feng,Yi Zheng,Zhu-An Xu###
(770499, 770499)
 Using temperature-dependentmagnetoresistance, Hall and thermoelectric coefficients of Nernst and Seebeckeffects, we determine that the emergence of the NMR phenomena in M<missing VAR>Pn2 iscoincident with a Lifshitz transition, corresponding to the formation of uniqueelectron-hole-electron (e-h-e) pockets along the I-L<missing VAR>-I direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 0, ';', 2]

I
###Negative Magnetoresistance in Topological Semimetals of Transition-Metal Dipnictides with Nontrivial Z2 Indices|Yupeng Li,Zhen Wang,Yunhao Lu,Xiaojun Yang,Zhixuan Shen,Feng Sheng,Chunmu Feng,Yi Zheng,Zhu-An Xu###
(770520, 770520)
First-principles calculations reveal that, along the I-L<missing VAR>-I line, thed<missing VAR>xy and dx2-y<missing VAR>2 orbitals of the transition metal form tiltednodal rings of band crossing well below the Fermi level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 0, ';', 1]

I
###Negative Magnetoresistance in Topological Semimetals of Transition-Metal Dipnictides with Nontrivial Z2 Indices|Yupeng Li,Zhen Wang,Yunhao Lu,Xiaojun Yang,Zhixuan Shen,Feng Sheng,Chunmu Feng,Yi Zheng,Zhu-An Xu###
(770524, 770524)
First-principles calculations reveal that, along the I-L<missing VAR>-I line, thed<missing VAR>xy and dx2-y<missing VAR>2 orbitals of the transition metal form tiltednodal rings of band crossing well below the Fermi level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 0, ';', 1]

N
###Negative Magnetoresistance in Topological Semimetals of Transition-Metal Dipnictides with Nontrivial Z2 Indices|Yupeng Li,Zhen Wang,Yunhao Lu,Xiaojun Yang,Zhixuan Shen,Feng Sheng,Chunmu Feng,Yi Zheng,Zhu-An Xu###
(770681, 770681)
 By excluding the weak localizationcontribution of the bulk states, we conclude that the universal NMR inM<missing VAR>Pn2 may have an exotic origin in topological surface states, whichappears in pairs with opposite spin-momentum locking on nontrivial surfaces.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 0, ';', 1]

ZrSiS
###Butterfly Magnetoresistance, Quasi-2D Dirac Fermi Surfaces, and a Topological Phase Transition in ZrSiS|Mazhar N. Ali,Leslie M. Schoop,Chirag Garg,Judith M. Lippmann,Eric Lara,Bettina Lotsch,Stuart Parkin###
(770774, 770776)
Butterfly Magnetoresistance, Quasi-2D<missing VAR> Dirac Fermi Surfaces, and a Topological Phase Transition in ZrSiS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 1.8, 'x', 3],[161.0, 9, 'T', 3],[164.0, 2, 'K', 3],[174.0, 45, 'o', 3],[224.0, 90, 'o', 4],[309.0, 2, 'D', 5],[312.0, 3, 'D', 5],[541.0, 3, 'D', 7]

ZrSiS
###Butterfly Magnetoresistance, Quasi-2D Dirac Fermi Surfaces, and a Topological Phase Transition in ZrSiS|Mazhar N. Ali,Leslie M. Schoop,Chirag Garg,Judith M. Lippmann,Eric Lara,Bettina Lotsch,Stuart Parkin###
(770906, 770908)
 Herewe report the observation of an unusual butterfly shaped titanic angularmagnetoresistance (AMR) in the non-magnetic, Dirac material, ZrSiS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 1.8, 'x', 1],[29.0, 9, 'T', 1],[32.0, 2, 'K', 1],[42.0, 45, 'o', 1],[92.0, 90, 'o', 2],[177.0, 2, 'D', 3],[180.0, 3, 'D', 3],[409.0, 3, 'D', 5]

H
###Butterfly Magnetoresistance, Quasi-2D Dirac Fermi Surfaces, and a Topological Phase Transition in ZrSiS|Mazhar N. Ali,Leslie M. Schoop,Chirag Garg,Judith M. Lippmann,Eric Lara,Bettina Lotsch,Stuart Parkin###
(770985, 770985)
 The MR islarge and positive, reaching nearly 1.8 x 105 percent at 9 T and 2 K at anangle of 45o between the applied current (along the a-axis) and the appliedfield (90o<missing VAR> is H parallel to the c<missing VAR>-axis).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 1.8, 'x', 0],[48.0, 9, 'T', 0],[45.0, 2, 'K', 0],[35.0, 45, 'o', 0],[15.0, 90, 'o', 1],[100.0, 2, 'D', 2],[103.0, 3, 'D', 2],[332.0, 3, 'D', 4]

H2
###Butterfly Magnetoresistance, Quasi-2D Dirac Fermi Surfaces, and a Topological Phase Transition in ZrSiS|Mazhar N. Ali,Leslie M. Schoop,Chirag Garg,Judith M. Lippmann,Eric Lara,Bettina Lotsch,Stuart Parkin###
(771042, 771043)
 Approaching 90o, a dip is seen inthe AMR which can be traced to an angle dependent deviation from the H2 law.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 1.8, 'x', 1],[105.0, 9, 'T', 1],[102.0, 2, 'K', 1],[92.0, 45, 'o', 1],[42.0, 90, 'o', 0],[42.0, 2, 'D', 1],[45.0, 3, 'D', 1],[274.0, 3, 'D', 3]

H
###Butterfly Magnetoresistance, Quasi-2D Dirac Fermi Surfaces, and a Topological Phase Transition in ZrSiS|Mazhar N. Ali,Leslie M. Schoop,Chirag Garg,Judith M. Lippmann,Eric Lara,Bettina Lotsch,Stuart Parkin###
(771056, 771056)
By analyzing the SdH oscillations at different angles, we find that ZrSiS has acombination of 2D and 3D Dirac pockets comprising its Fermi surface and thatthe anomalous transport behavior coincides with a topological phase transitionwhose robust signature is evident despite transport contributions from otherparts of the Fermi surface.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 1.8, 'x', 2],[119.0, 9, 'T', 2],[116.0, 2, 'K', 2],[106.0, 45, 'o', 2],[56.0, 90, 'o', 1],[29.0, 2, 'D', 0],[32.0, 3, 'D', 0],[261.0, 3, 'D', 2]

ZrSiS
###Butterfly Magnetoresistance, Quasi-2D Dirac Fermi Surfaces, and a Topological Phase Transition in ZrSiS|Mazhar N. Ali,Leslie M. Schoop,Chirag Garg,Judith M. Lippmann,Eric Lara,Bettina Lotsch,Stuart Parkin###
(771073, 771075)
By analyzing the SdH oscillations at different angles, we find that ZrSiS has acombination of 2D and 3D Dirac pockets comprising its Fermi surface and thatthe anomalous transport behavior coincides with a topological phase transitionwhose robust signature is evident despite transport contributions from otherparts of the Fermi surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 1.8, 'x', 2],[136.0, 9, 'T', 2],[133.0, 2, 'K', 2],[123.0, 45, 'o', 2],[73.0, 90, 'o', 1],[10.0, 2, 'D', 0],[13.0, 3, 'D', 0],[242.0, 3, 'D', 2]

ZrSiS
###Butterfly Magnetoresistance, Quasi-2D Dirac Fermi Surfaces, and a Topological Phase Transition in ZrSiS|Mazhar N. Ali,Leslie M. Schoop,Chirag Garg,Judith M. Lippmann,Eric Lara,Bettina Lotsch,Stuart Parkin###
(771246, 771248)
 The combination of very highmobility carriers and multiple Fermi surfaces in ZrSiS allow for large bulkproperty changes to occur as a function of angle between applied fields makesit a promising platform to study the physics stemming from the coexistence of2D<missing VAR> and 3D Dirac electrons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[317.0, 1.8, 'x', 4],[309.0, 9, 'T', 4],[306.0, 2, 'K', 4],[296.0, 45, 'o', 4],[246.0, 90, 'o', 3],[161.0, 2, 'D', 2],[158.0, 3, 'D', 2],[69.0, 3, 'D', 0]

LaAlO3/SrTiO3
###Semiclassical theory of anisotropic transport at LaAlO3/SrTiO3 interfaces under in-plane magnetic field|N. Bovenzi,M. Diez###
(771344, 771352)
Semiclassical theory of anisotropic transport at LaAlO3/SrTiO3 interfaces under in-plane magnetic field.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[338.0, 10, 'T', 6]

LaAlO3
###Semiclassical theory of anisotropic transport at LaAlO3/SrTiO3 interfaces under in-plane magnetic field|N. Bovenzi,M. Diez###
(771388, 771391)
 The unconventional magnetotransport at the interface between transition-metaloxides LaAlO3 (L<missing VAR>AO) and SrTiO3 (ST<missing VAR>O) is frequently related to mobileelectrons interacting with localized magnetic moments.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[299.0, 10, 'T', 5]

O
###Semiclassical theory of anisotropic transport at LaAlO3/SrTiO3 interfaces under in-plane magnetic field|N. Bovenzi,M. Diez###
(771396, 771396)
 The unconventional magnetotransport at the interface between transition-metaloxides LaAlO3 (L<missing VAR>AO) and SrTiO3 (ST<missing VAR>O) is frequently related to mobileelectrons interacting with localized magnetic moments.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[294.0, 10, 'T', 5]

SrTiO3
###Semiclassical theory of anisotropic transport at LaAlO3/SrTiO3 interfaces under in-plane magnetic field|N. Bovenzi,M. Diez###
(771401, 771404)
 The unconventional magnetotransport at the interface between transition-metaloxides LaAlO3 (L<missing VAR>AO) and SrTiO3 (ST<missing VAR>O) is frequently related to mobileelectrons interacting with localized magnetic moments.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[286.0, 10, 'T', 5]

S
###Semiclassical theory of anisotropic transport at LaAlO3/SrTiO3 interfaces under in-plane magnetic field|N. Bovenzi,M. Diez###
(771407, 771407)
 The unconventional magnetotransport at the interface between transition-metaloxides LaAlO3 (L<missing VAR>AO) and SrTiO3 (ST<missing VAR>O) is frequently related to mobileelectrons interacting with localized magnetic moments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[283.0, 10, 'T', 5]

O
###Semiclassical theory of anisotropic transport at LaAlO3/SrTiO3 interfaces under in-plane magnetic field|N. Bovenzi,M. Diez###
(771409, 771409)
 The unconventional magnetotransport at the interface between transition-metaloxides LaAlO3 (L<missing VAR>AO) and SrTiO3 (ST<missing VAR>O) is frequently related to mobileelectrons interacting with localized magnetic moments.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[281.0, 10, 'T', 5]

In
###Semiclassical theory of anisotropic transport at LaAlO3/SrTiO3 interfaces under in-plane magnetic field|N. Bovenzi,M. Diez###
(771468, 771468)
 Inthis paper, we focus on transport effects driven by spin-orbit coupling andintentionally neglect possible strong correlations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[222.0, 10, 'T', 3]

At
###Semiclassical theory of anisotropic transport at LaAlO3/SrTiO3 interfaces under in-plane magnetic field|N. Bovenzi,M. Diez###
(771619, 771619)
 At temperatures of a few Kelvin and densitiessuch that the chemical potential crosses the second pair of spin-orbit splitbands, we find a strongly anisotropic modulation of the (negative)magnetoresistance above 10 T, characterized by multiple maxima and minima awayfrom the crystalline axes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 10, 'T', 0]

Fe
###Preparation, structure and giant magnetoresistance of electrodeposited Fe Co/Cu multilayers|B. G. Tóth,L. Péter,L. Pogány,Á. Révész,I. Bakonyi###
(771949, 771949)
Preparation, structure and giant magnetoresistance of electrodeposited Fe Co/Cu multilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[192.0, 0.8, 'nm', 3],[195.0, 10, 'nm', 3],[284.0, 1.5, 'nm', 6],[333.0, 1, 'kOe', 6]

Co/Cu
###Preparation, structure and giant magnetoresistance of electrodeposited Fe Co/Cu multilayers|B. G. Tóth,L. Péter,L. Pogány,Á. Révész,I. Bakonyi###
(771951, 771953)
Preparation, structure and giant magnetoresistance of electrodeposited Fe Co/Cu multilayers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[188.0, 0.8, 'nm', 3],[191.0, 10, 'nm', 3],[280.0, 1.5, 'nm', 6],[329.0, 1, 'kOe', 6]

No
###Preparation, structure and giant magnetoresistance of electrodeposited Fe Co/Cu multilayers|B. G. Tóth,L. Péter,L. Pogány,Á. Révész,I. Bakonyi###
(771958, 771958)
 No systematic studies have been carried out on the giant magnetoresistance(GMR) of electrodeposited (ED) Fe-Co/Cu multilayers since the elaboration of amethod for the optimization of the Cu layer deposition potential.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0
[183.0, 0.8, 'nm', 2],[186.0, 10, 'nm', 2],[275.0, 1.5, 'nm', 5],[324.0, 1, 'kOe', 5]

Fe
###Preparation, structure and giant magnetoresistance of electrodeposited Fe Co/Cu multilayers|B. G. Tóth,L. Péter,L. Pogány,Á. Révész,I. Bakonyi###
(771996, 771996)
 No systematic studies have been carried out on the giant magnetoresistance(GMR) of electrodeposited (ED) Fe-Co/Cu multilayers since the elaboration of amethod for the optimization of the Cu layer deposition potential.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 0.8, 'nm', 2],[148.0, 10, 'nm', 2],[237.0, 1.5, 'nm', 5],[286.0, 1, 'kOe', 5]

Co/Cu
###Preparation, structure and giant magnetoresistance of electrodeposited Fe Co/Cu multilayers|B. G. Tóth,L. Péter,L. Pogány,Á. Révész,I. Bakonyi###
(771998, 772000)
 No systematic studies have been carried out on the giant magnetoresistance(GMR) of electrodeposited (ED) Fe-Co/Cu multilayers since the elaboration of amethod for the optimization of the Cu layer deposition potential.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[141.0, 0.8, 'nm', 2],[144.0, 10, 'nm', 2],[233.0, 1.5, 'nm', 5],[282.0, 1, 'kOe', 5]

Cu
###Preparation, structure and giant magnetoresistance of electrodeposited Fe Co/Cu multilayers|B. G. Tóth,L. Péter,L. Pogány,Á. Révész,I. Bakonyi###
(772027, 772027)
 No systematic studies have been carried out on the giant magnetoresistance(GMR) of electrodeposited (ED) Fe-Co/Cu multilayers since the elaboration of amethod for the optimization of the Cu layer deposition potential.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 0.8, 'nm', 2],[117.0, 10, 'nm', 2],[206.0, 1.5, 'nm', 5],[255.0, 1, 'kOe', 5]

In
###Preparation, structure and giant magnetoresistance of electrodeposited Fe Co/Cu multilayers|B. G. Tóth,L. Péter,L. Pogány,Á. Révész,I. Bakonyi###
(772036, 772036)
 In thispaper, we present results on the electrochemical optimization of the Cu layerdeposition potential which was found to depend on the relative ironconcentration in the bath.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 0.8, 'nm', 1],[108.0, 10, 'nm', 1],[197.0, 1.5, 'nm', 4],[246.0, 1, 'kOe', 4]

Cu
###Preparation, structure and giant magnetoresistance of electrodeposited Fe Co/Cu multilayers|B. G. Tóth,L. Péter,L. Pogány,Á. Révész,I. Bakonyi###
(772062, 772062)
 In thispaper, we present results on the electrochemical optimization of the Cu layerdeposition potential which was found to depend on the relative ironconcentration in the bath.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 0.8, 'nm', 1],[82.0, 10, 'nm', 1],[171.0, 1.5, 'nm', 4],[220.0, 1, 'kOe', 4]

Co95
###Preparation, structure and giant magnetoresistance of electrodeposited Fe Co/Cu multilayers|B. G. Tóth,L. Péter,L. Pogány,Á. Révész,I. Bakonyi###
(772116, 772117)
 An X<missing VAR>-ray diffraction study of ED Fe5Co95(1.5nm)/Cu(d<missing VAR>Cu) multilayers with d<missing VAR>Cu ranging from 0.8 nm to 10 nm revealed an fccstructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 0.8, 'nm', 0],[27.0, 10, 'nm', 0],[116.0, 1.5, 'nm', 3],[165.0, 1, 'kOe', 3]

Cu
###Preparation, structure and giant magnetoresistance of electrodeposited Fe Co/Cu multilayers|B. G. Tóth,L. Péter,L. Pogány,Á. Révész,I. Bakonyi###
(772125, 772125)
 An X<missing VAR>-ray diffraction study of ED Fe5Co95(1.5nm)/Cu(d<missing VAR>Cu) multilayers with d<missing VAR>Cu ranging from 0.8 nm to 10 nm revealed an fccstructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 0.8, 'nm', 0],[19.0, 10, 'nm', 0],[108.0, 1.5, 'nm', 3],[157.0, 1, 'kOe', 3]

Cu
###Preparation, structure and giant magnetoresistance of electrodeposited Fe Co/Cu multilayers|B. G. Tóth,L. Péter,L. Pogány,Á. Révész,I. Bakonyi###
(772128, 772128)
 An X<missing VAR>-ray diffraction study of ED Fe5Co95(1.5nm)/Cu(d<missing VAR>Cu) multilayers with d<missing VAR>Cu ranging from 0.8 nm to 10 nm revealed an fccstructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 0.8, 'nm', 0],[16.0, 10, 'nm', 0],[105.0, 1.5, 'nm', 3],[154.0, 1, 'kOe', 3]

Cu
###Preparation, structure and giant magnetoresistance of electrodeposited Fe Co/Cu multilayers|B. G. Tóth,L. Péter,L. Pogány,Á. Révész,I. Bakonyi###
(772136, 772136)
 An X<missing VAR>-ray diffraction study of ED Fe5Co95(1.5nm)/Cu(d<missing VAR>Cu) multilayers with d<missing VAR>Cu ranging from 0.8 nm to 10 nm revealed an fccstructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 0.8, 'nm', 0],[8.0, 10, 'nm', 0],[97.0, 1.5, 'nm', 3],[146.0, 1, 'kOe', 3]

Cu
###Preparation, structure and giant magnetoresistance of electrodeposited Fe Co/Cu multilayers|B. G. Tóth,L. Péter,L. Pogány,Á. Révész,I. Bakonyi###
(772224, 772224)
Multilayers with Cu layer thicknesses above about 1.5 nm were found to exhibita GMR behavior with a maximum GMR of about 5 % and a typical saturation fieldof 1 kOe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 0.8, 'nm', 3],[80.0, 10, 'nm', 3],[9.0, 1.5, 'nm', 0],[58.0, 1, 'kOe', 0]

Fe
###Preparation, structure and giant magnetoresistance of electrodeposited Fe Co/Cu multilayers|B. G. Tóth,L. Péter,L. Pogány,Á. Révész,I. Bakonyi###
(772299, 772299)
 The GMR magnitude decreased with increasing Fe-content in themagnetic layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 0.8, 'nm', 4],[155.0, 10, 'nm', 4],[66.0, 1.5, 'nm', 1],[17.0, 1, 'kOe', 1]

Fe
###Preparation, structure and giant magnetoresistance of electrodeposited Fe Co/Cu multilayers|B. G. Tóth,L. Péter,L. Pogány,Á. Révész,I. Bakonyi###
(772399, 772399)
 A comparison withliterature data on both physically deposited and ED Fe-Co/Cu multilayers isalso made.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[258.0, 0.8, 'nm', 6],[255.0, 10, 'nm', 6],[166.0, 1.5, 'nm', 3],[117.0, 1, 'kOe', 3]

Co/Cu
###Preparation, structure and giant magnetoresistance of electrodeposited Fe Co/Cu multilayers|B. G. Tóth,L. Péter,L. Pogány,Á. Révész,I. Bakonyi###
(772401, 772403)
 A comparison withliterature data on both physically deposited and ED Fe-Co/Cu multilayers isalso made.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[260.0, 0.8, 'nm', 6],[257.0, 10, 'nm', 6],[168.0, 1.5, 'nm', 3],[119.0, 1, 'kOe', 3]

BaFe2As2
###The role of magnetic excitations in magnetoresistance and Hall effect of slightly TM-substituted BaFe$_{2}$As$_2$ compounds (TM = Mn, Cu, Ni)|J. P. Peña,M. M. Piva,C. B. R. Jesus,G. G. Lesseux,T. M. Garitezi,D. Tobia,P. F. S. Rosa,T. Grant,Z. Fisk,C. Adriano,R. R. Urbano,P. G. Pagliuso,P. Pureur###
(772452, 772456)
The role of magnetic excitations in magnetoresistance and Hall effect of slightly TM-substituted BaFe2As2 compounds (TM  Mn, Cu, Ni).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[383.0, 20, 'K', 5]

Mn
###The role of magnetic excitations in magnetoresistance and Hall effect of slightly TM-substituted BaFe$_{2}$As$_2$ compounds (TM = Mn, Cu, Ni)|J. P. Peña,M. M. Piva,C. B. R. Jesus,G. G. Lesseux,T. M. Garitezi,D. Tobia,P. F. S. Rosa,T. Grant,Z. Fisk,C. Adriano,R. R. Urbano,P. G. Pagliuso,P. Pureur###
(772465, 772465)
The role of magnetic excitations in magnetoresistance and Hall effect of slightly TM-substituted BaFe2As2 compounds (TM  Mn, Cu, Ni).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[374.0, 20, 'K', 5]

Cu
###The role of magnetic excitations in magnetoresistance and Hall effect of slightly TM-substituted BaFe$_{2}$As$_2$ compounds (TM = Mn, Cu, Ni)|J. P. Peña,M. M. Piva,C. B. R. Jesus,G. G. Lesseux,T. M. Garitezi,D. Tobia,P. F. S. Rosa,T. Grant,Z. Fisk,C. Adriano,R. R. Urbano,P. G. Pagliuso,P. Pureur###
(772468, 772468)
The role of magnetic excitations in magnetoresistance and Hall effect of slightly TM-substituted BaFe2As2 compounds (TM  Mn, Cu, Ni).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[371.0, 20, 'K', 5]

Ni
###The role of magnetic excitations in magnetoresistance and Hall effect of slightly TM-substituted BaFe$_{2}$As$_2$ compounds (TM = Mn, Cu, Ni)|J. P. Peña,M. M. Piva,C. B. R. Jesus,G. G. Lesseux,T. M. Garitezi,D. Tobia,P. F. S. Rosa,T. Grant,Z. Fisk,C. Adriano,R. R. Urbano,P. G. Pagliuso,P. Pureur###
(772471, 772471)
The role of magnetic excitations in magnetoresistance and Hall effect of slightly TM-substituted BaFe2As2 compounds (TM  Mn, Cu, Ni).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[368.0, 20, 'K', 5]

BaFe2
###The role of magnetic excitations in magnetoresistance and Hall effect of slightly TM-substituted BaFe$_{2}$As$_2$ compounds (TM = Mn, Cu, Ni)|J. P. Peña,M. M. Piva,C. B. R. Jesus,G. G. Lesseux,T. M. Garitezi,D. Tobia,P. F. S. Rosa,T. Grant,Z. Fisk,C. Adriano,R. R. Urbano,P. G. Pagliuso,P. Pureur###
(772510, 772512)
 We report on electrical resistivity, magnetoresistance (MR) and Hall effectmeasurements in four non-superconducting BaFe2-xTMxAs2 (TM  Mn, Cuand Ni) single crystals with small values of the chemical substitution x<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[327.0, 20, 'K', 4]

As2
###The role of magnetic excitations in magnetoresistance and Hall effect of slightly TM-substituted BaFe$_{2}$As$_2$ compounds (TM = Mn, Cu, Ni)|J. P. Peña,M. M. Piva,C. B. R. Jesus,G. G. Lesseux,T. M. Garitezi,D. Tobia,P. F. S. Rosa,T. Grant,Z. Fisk,C. Adriano,R. R. Urbano,P. G. Pagliuso,P. Pureur###
(772518, 772519)
 We report on electrical resistivity, magnetoresistance (MR) and Hall effectmeasurements in four non-superconducting BaFe2-xTMxAs2 (TM  Mn, Cuand Ni) single crystals with small values of the chemical substitution x<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[320.0, 20, 'K', 4]

Mn
###The role of magnetic excitations in magnetoresistance and Hall effect of slightly TM-substituted BaFe$_{2}$As$_2$ compounds (TM = Mn, Cu, Ni)|J. P. Peña,M. M. Piva,C. B. R. Jesus,G. G. Lesseux,T. M. Garitezi,D. Tobia,P. F. S. Rosa,T. Grant,Z. Fisk,C. Adriano,R. R. Urbano,P. G. Pagliuso,P. Pureur###
(772526, 772526)
 We report on electrical resistivity, magnetoresistance (MR) and Hall effectmeasurements in four non-superconducting BaFe2-xTMxAs2 (TM  Mn, Cuand Ni) single crystals with small values of the chemical substitution x<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[313.0, 20, 'K', 4]

Cu
###The role of magnetic excitations in magnetoresistance and Hall effect of slightly TM-substituted BaFe$_{2}$As$_2$ compounds (TM = Mn, Cu, Ni)|J. P. Peña,M. M. Piva,C. B. R. Jesus,G. G. Lesseux,T. M. Garitezi,D. Tobia,P. F. S. Rosa,T. Grant,Z. Fisk,C. Adriano,R. R. Urbano,P. G. Pagliuso,P. Pureur###
(772529, 772529)
 We report on electrical resistivity, magnetoresistance (MR) and Hall effectmeasurements in four non-superconducting BaFe2-xTMxAs2 (TM  Mn, Cuand Ni) single crystals with small values of the chemical substitution x<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[310.0, 20, 'K', 4]

Ni
###The role of magnetic excitations in magnetoresistance and Hall effect of slightly TM-substituted BaFe$_{2}$As$_2$ compounds (TM = Mn, Cu, Ni)|J. P. Peña,M. M. Piva,C. B. R. Jesus,G. G. Lesseux,T. M. Garitezi,D. Tobia,P. F. S. Rosa,T. Grant,Z. Fisk,C. Adriano,R. R. Urbano,P. G. Pagliuso,P. Pureur###
(772534, 772534)
 We report on electrical resistivity, magnetoresistance (MR) and Hall effectmeasurements in four non-superconducting BaFe2-xTMxAs2 (TM  Mn, Cuand Ni) single crystals with small values of the chemical substitution x<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[305.0, 20, 'K', 4]

S
###The role of magnetic excitations in magnetoresistance and Hall effect of slightly TM-substituted BaFe$_{2}$As$_2$ compounds (TM = Mn, Cu, Ni)|J. P. Peña,M. M. Piva,C. B. R. Jesus,G. G. Lesseux,T. M. Garitezi,D. Tobia,P. F. S. Rosa,T. Grant,Z. Fisk,C. Adriano,R. R. Urbano,P. G. Pagliuso,P. Pureur###
(772568, 772568)
 Thespin density wave (SD<missing VAR>W) ordering that occurs in these systems at temperaturesT<missing VAR>sim (120 - 140) K, in close vicinity to a tetragonal/orthorhombictransition, produces significant modifications in their magneto-transportproperties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[271.0, 20, 'K', 3]

W
###The role of magnetic excitations in magnetoresistance and Hall effect of slightly TM-substituted BaFe$_{2}$As$_2$ compounds (TM = Mn, Cu, Ni)|J. P. Peña,M. M. Piva,C. B. R. Jesus,G. G. Lesseux,T. M. Garitezi,D. Tobia,P. F. S. Rosa,T. Grant,Z. Fisk,C. Adriano,R. R. Urbano,P. G. Pagliuso,P. Pureur###
(772570, 772570)
 Thespin density wave (SD<missing VAR>W) ordering that occurs in these systems at temperaturesT<missing VAR>sim (120 - 140) K, in close vicinity to a tetragonal/orthorhombictransition, produces significant modifications in their magneto-transportproperties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[269.0, 20, 'K', 3]

K
###The role of magnetic excitations in magnetoresistance and Hall effect of slightly TM-substituted BaFe$_{2}$As$_2$ compounds (TM = Mn, Cu, Ni)|J. P. Peña,M. M. Piva,C. B. R. Jesus,G. G. Lesseux,T. M. Garitezi,D. Tobia,P. F. S. Rosa,T. Grant,Z. Fisk,C. Adriano,R. R. Urbano,P. G. Pagliuso,P. Pureur###
(772601, 772601)
 Thespin density wave (SD<missing VAR>W) ordering that occurs in these systems at temperaturesT<missing VAR>sim (120 - 140) K, in close vicinity to a tetragonal/orthorhombictransition, produces significant modifications in their magneto-transportproperties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[238.0, 20, 'K', 3]

S
###The role of magnetic excitations in magnetoresistance and Hall effect of slightly TM-substituted BaFe$_{2}$As$_2$ compounds (TM = Mn, Cu, Ni)|J. P. Peña,M. M. Piva,C. B. R. Jesus,G. G. Lesseux,T. M. Garitezi,D. Tobia,P. F. S. Rosa,T. Grant,Z. Fisk,C. Adriano,R. R. Urbano,P. G. Pagliuso,P. Pureur###
(772716, 772716)
 Above the spin density wave transitiontemperature (T<missing VAR>textSD<missing VAR>W) the Hall coefficient R<missing VAR>H is negative, smalland weakly temperature dependent, but a remarkable change of slope occurs inthe R<missing VAR>H versus T<missing VAR> curves at T<missing VAR>  T<missing VAR>textSD<missing VAR>W.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 20, 'K', 1]

W
###The role of magnetic excitations in magnetoresistance and Hall effect of slightly TM-substituted BaFe$_{2}$As$_2$ compounds (TM = Mn, Cu, Ni)|J. P. Peña,M. M. Piva,C. B. R. Jesus,G. G. Lesseux,T. M. Garitezi,D. Tobia,P. F. S. Rosa,T. Grant,Z. Fisk,C. Adriano,R. R. Urbano,P. G. Pagliuso,P. Pureur###
(772718, 772718)
 Above the spin density wave transitiontemperature (T<missing VAR>textSD<missing VAR>W) the Hall coefficient R<missing VAR>H is negative, smalland weakly temperature dependent, but a remarkable change of slope occurs inthe R<missing VAR>H versus T<missing VAR> curves at T<missing VAR>  T<missing VAR>textSD<missing VAR>W.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 20, 'K', 1]

H
###The role of magnetic excitations in magnetoresistance and Hall effect of slightly TM-substituted BaFe$_{2}$As$_2$ compounds (TM = Mn, Cu, Ni)|J. P. Peña,M. M. Piva,C. B. R. Jesus,G. G. Lesseux,T. M. Garitezi,D. Tobia,P. F. S. Rosa,T. Grant,Z. Fisk,C. Adriano,R. R. Urbano,P. G. Pagliuso,P. Pureur###
(772728, 772728)
 Above the spin density wave transitiontemperature (T<missing VAR>textSD<missing VAR>W) the Hall coefficient R<missing VAR>H is negative, smalland weakly temperature dependent, but a remarkable change of slope occurs inthe R<missing VAR>H versus T<missing VAR> curves at T<missing VAR>  T<missing VAR>textSD<missing VAR>W.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 20, 'K', 1]

H
###The role of magnetic excitations in magnetoresistance and Hall effect of slightly TM-substituted BaFe$_{2}$As$_2$ compounds (TM = Mn, Cu, Ni)|J. P. Peña,M. M. Piva,C. B. R. Jesus,G. G. Lesseux,T. M. Garitezi,D. Tobia,P. F. S. Rosa,T. Grant,Z. Fisk,C. Adriano,R. R. Urbano,P. G. Pagliuso,P. Pureur###
(772767, 772767)
 Above the spin density wave transitiontemperature (T<missing VAR>textSD<missing VAR>W) the Hall coefficient R<missing VAR>H is negative, smalland weakly temperature dependent, but a remarkable change of slope occurs inthe R<missing VAR>H versus T<missing VAR> curves at T<missing VAR>  T<missing VAR>textSD<missing VAR>W.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 20, 'K', 1]

S
###The role of magnetic excitations in magnetoresistance and Hall effect of slightly TM-substituted BaFe$_{2}$As$_2$ compounds (TM = Mn, Cu, Ni)|J. P. Peña,M. M. Piva,C. B. R. Jesus,G. G. Lesseux,T. M. Garitezi,D. Tobia,P. F. S. Rosa,T. Grant,Z. Fisk,C. Adriano,R. R. Urbano,P. G. Pagliuso,P. Pureur###
(772782, 772782)
 Above the spin density wave transitiontemperature (T<missing VAR>textSD<missing VAR>W) the Hall coefficient R<missing VAR>H is negative, smalland weakly temperature dependent, but a remarkable change of slope occurs inthe R<missing VAR>H versus T<missing VAR> curves at T<missing VAR>  T<missing VAR>textSD<missing VAR>W.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 20, 'K', 1]

W
###The role of magnetic excitations in magnetoresistance and Hall effect of slightly TM-substituted BaFe$_{2}$As$_2$ compounds (TM = Mn, Cu, Ni)|J. P. Peña,M. M. Piva,C. B. R. Jesus,G. G. Lesseux,T. M. Garitezi,D. Tobia,P. F. S. Rosa,T. Grant,Z. Fisk,C. Adriano,R. R. Urbano,P. G. Pagliuso,P. Pureur###
(772784, 772784)
 Above the spin density wave transitiontemperature (T<missing VAR>textSD<missing VAR>W) the Hall coefficient R<missing VAR>H is negative, smalland weakly temperature dependent, but a remarkable change of slope occurs inthe R<missing VAR>H versus T<missing VAR> curves at T<missing VAR>  T<missing VAR>textSD<missing VAR>W.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 20, 'K', 1]

S
###The role of magnetic excitations in magnetoresistance and Hall effect of slightly TM-substituted BaFe$_{2}$As$_2$ compounds (TM = Mn, Cu, Ni)|J. P. Peña,M. M. Piva,C. B. R. Jesus,G. G. Lesseux,T. M. Garitezi,D. Tobia,P. F. S. Rosa,T. Grant,Z. Fisk,C. Adriano,R. R. Urbano,P. G. Pagliuso,P. Pureur###
(772827, 772827)
 The Hall coefficientamplitude, while remaining negative, increases steadily and significantly asthe temperature is decreased below T<missing VAR>textSD<missing VAR>W and down to T<missing VAR>  20 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 20, 'K', 0]

W
###The role of magnetic excitations in magnetoresistance and Hall effect of slightly TM-substituted BaFe$_{2}$As$_2$ compounds (TM = Mn, Cu, Ni)|J. P. Peña,M. M. Piva,C. B. R. Jesus,G. G. Lesseux,T. M. Garitezi,D. Tobia,P. F. S. Rosa,T. Grant,Z. Fisk,C. Adriano,R. R. Urbano,P. G. Pagliuso,P. Pureur###
(772829, 772829)
 The Hall coefficientamplitude, while remaining negative, increases steadily and significantly asthe temperature is decreased below T<missing VAR>textSD<missing VAR>W and down to T<missing VAR>  20 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 20, 'K', 0]

RhSb3
###Symmetry-enforced Fermi degeneracy in topological semimetal RhSb$_3$|Kefeng Wang,Limin Wang,I-Lin Liu,F. Boschini,M. Zonno,M. Michiardi,E. Rotenberg,A. Bostwick,D. Graf,B. J. Ramshaw,A. Damascelli,J. Paglione###
(773024, 773026)
Symmetry-enforced Fermi degeneracy in topological semimetal RhSb3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[193.0, 200, 'at', 3]

RhSb3
###Symmetry-enforced Fermi degeneracy in topological semimetal RhSb$_3$|Kefeng Wang,Limin Wang,I-Lin Liu,F. Boschini,M. Zonno,M. Michiardi,E. Rotenberg,A. Bostwick,D. Graf,B. J. Ramshaw,A. Damascelli,J. Paglione###
(773092, 773094)
 Predictions of a topological electronic structure in the skutterudite T<missing VAR>Pn3family (T<missing VAR>transition metal, Pnpnictogen) are investigated viamagnetoresistance, quantum oscillations and angle-resolved photoemissionexperiments of RhSb3, an unfilled skutterudite semimetal with low carrierdensity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 200, 'at', 2]

RhSb3
###Symmetry-enforced Fermi degeneracy in topological semimetal RhSb$_3$|Kefeng Wang,Limin Wang,I-Lin Liu,F. Boschini,M. Zonno,M. Michiardi,E. Rotenberg,A. Bostwick,D. Graf,B. J. Ramshaw,A. Damascelli,J. Paglione###
(773132, 773134)
 Electronic band structure calculations and symmetry analysis ofRhSb3 indicate this material to be a zero-gap semimetal protected bysymmetry with inverted valence/conduction bands that touch at the Gammapoint close to the Fermi level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 200, 'at', 1]

K
###Symmetry-enforced Fermi degeneracy in topological semimetal RhSb$_3$|Kefeng Wang,Limin Wang,I-Lin Liu,F. Boschini,M. Zonno,M. Michiardi,E. Rotenberg,A. Bostwick,D. Graf,B. J. Ramshaw,A. Damascelli,J. Paglione###
(773243, 773243)
 Transport experiments reveal an unsaturatedlinear magnetoresistance that approaches a factor of 200 at 60T<missing VAR> magneticfields, and quantum oscillations observable up to 150K that are consistentwith a large Fermi velocity (sim 1.3times 106 m/s), high carrier mobility(sim 14 m<missing VAR>2/Vs), and the existence of a small three dimensional holepocket.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 200, 'at', 0]

RhSb3
###Symmetry-enforced Fermi degeneracy in topological semimetal RhSb$_3$|Kefeng Wang,Limin Wang,I-Lin Liu,F. Boschini,M. Zonno,M. Michiardi,E. Rotenberg,A. Bostwick,D. Graf,B. J. Ramshaw,A. Damascelli,J. Paglione###
(773423, 773425)
 This,together with a non-zero Berrys<missing VAR> phase and location of the Fermi level in thelinear region of the valence band, suggests RhSb3 as representative of a newclass of toplogical semimeals with symmetry-enforced Fermi degeneracy at thehigh symmetry points.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[204.0, 200, 'at', 2]

LaBi
###Fermi surface topology and signature of surface Dirac nodes in LaBi|Ratnadwip Singha,Biswarup Satpati,Prabhat Mandal###
(773496, 773497)
Fermi surface topology and signature of surface Dirac nodes in LaBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaBi
###Fermi surface topology and signature of surface Dirac nodes in LaBi|Ratnadwip Singha,Biswarup Satpati,Prabhat Mandal###
(773664, 773665)
Recently, LaBi has emerged as a new system, which exhibits the above mentionedproperties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaBi
###Fermi surface topology and signature of surface Dirac nodes in LaBi|Ratnadwip Singha,Biswarup Satpati,Prabhat Mandal###
(773752, 773753)
 Here, using the magnetotransport and magnetization measurements, wehave probed the bulk and surface states of LaBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Fermi surface topology and signature of surface Dirac nodes in LaBi|Ratnadwip Singha,Biswarup Satpati,Prabhat Mandal###
(773841, 773841)
 In the magnetization measurement, a prominent paramagneticsingularity has been observed, which demonstrates the non-trivial nature of thesurface states in LaBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaBi
###Fermi surface topology and signature of surface Dirac nodes in LaBi|Ratnadwip Singha,Biswarup Satpati,Prabhat Mandal###
(773889, 773890)
 In the magnetization measurement, a prominent paramagneticsingularity has been observed, which demonstrates the non-trivial nature of thesurface states in LaBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaBi
###Fermi surface topology and signature of surface Dirac nodes in LaBi|Ratnadwip Singha,Biswarup Satpati,Prabhat Mandal###
(773903, 773904)
 Our study unambiguously confirms that LaBi is athree-dimensional topological insulator with possible linear dispersion in thegapped bulk band structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Gd
###Magnetization reversal in Py/Gd heterostructures|Pavel N. Lapa,Junjia Ding,John E. Pearson,Valentine Novosad,J. S. Jiang,Axel Hoffmann###
(773957, 773957)
Magnetization reversal in Py/Gd heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, 20, 'K', 4],[359.0, 10, 'kOe', 7]

Gd
###Magnetization reversal in Py/Gd heterostructures|Pavel N. Lapa,Junjia Ding,John E. Pearson,Valentine Novosad,J. S. Jiang,Axel Hoffmann###
(774002, 774002)
 Using a combination of magnetometry and magnetotransport techniques, westudied temperature and magnetic field behavior of magnetization in Py/Gdheterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 20, 'K', 3],[314.0, 10, 'kOe', 6]

Gd
###Magnetization reversal in Py/Gd heterostructures|Pavel N. Lapa,Junjia Ding,John E. Pearson,Valentine Novosad,J. S. Jiang,Axel Hoffmann###
(774033, 774033)
 It was shown quantitatively that proximity with Py enhancesmagnetic order of Gd.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 20, 'K', 2],[283.0, 10, 'kOe', 5]

Gd
###Magnetization reversal in Py/Gd heterostructures|Pavel N. Lapa,Junjia Ding,John E. Pearson,Valentine Novosad,J. S. Jiang,Axel Hoffmann###
(774061, 774061)
 Micromagnetic simulations demonstrate that a spin-floptransition observed in a Py/Gd bilayer is due to exchange-spring rotation ofmagnetization in the Gd layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 20, 'K', 1],[255.0, 10, 'kOe', 4]

Gd
###Magnetization reversal in Py/Gd heterostructures|Pavel N. Lapa,Junjia Ding,John E. Pearson,Valentine Novosad,J. S. Jiang,Axel Hoffmann###
(774086, 774086)
 Micromagnetic simulations demonstrate that a spin-floptransition observed in a Py/Gd bilayer is due to exchange-spring rotation ofmagnetization in the Gd layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 20, 'K', 1],[230.0, 10, 'kOe', 4]

As
###Scaling Projections on Spin Transfer Torque Magnetic Tunnel Junctions|Debasis Das,Ashwin Tulapurkar,Bhaskaran Muralidharan###
(774447, 774447)
 As the transverse dimension ineach case reduces, we demonstrate that the transverse mode energy profile playsa major role in the resistance-area product.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Scaling Projections on Spin Transfer Torque Magnetic Tunnel Junctions|Debasis Das,Ashwin Tulapurkar,Bhaskaran Muralidharan###
(774639, 774639)
 In the pentalayer case, we observe an oscillatory behavior atsmaller areas as a result of double barrier tunneling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Signatures of long-range-correlated disorder in the magnetotransport of ultrathin topological insulators|D. Nandi,B. Skinner,G. H. Lee,K. -F. Huang,K. Shain,Cui-Zu Chang,Y. Ou,S. -P. Lee,J. Ward,J. S. Moodera,P. Kim,B. I. Halperin,A. Yacoby###
(774749, 774749)
 In an ultrathin topological insulator (T<missing VAR>I) film, a hybridization gap opens inthe T<missing VAR>I surface states, and the system is expected to become either a trivialinsulator or a quantum spin Hall insulator when the chemical potential iswithin the hybridization gap.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Signatures of long-range-correlated disorder in the magnetotransport of ultrathin topological insulators|D. Nandi,B. Skinner,G. H. Lee,K. -F. Huang,K. Shain,Cui-Zu Chang,Y. Ou,S. -P. Lee,J. Ward,J. S. Moodera,P. Kim,B. I. Halperin,A. Yacoby###
(774761, 774761)
 In an ultrathin topological insulator (T<missing VAR>I) film, a hybridization gap opens inthe T<missing VAR>I surface states, and the system is expected to become either a trivialinsulator or a quantum spin Hall insulator when the chemical potential iswithin the hybridization gap.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Signatures of long-range-correlated disorder in the magnetotransport of ultrathin topological insulators|D. Nandi,B. Skinner,G. H. Lee,K. -F. Huang,K. Shain,Cui-Zu Chang,Y. Ou,S. -P. Lee,J. Ward,J. S. Moodera,P. Kim,B. I. Halperin,A. Yacoby###
(774781, 774781)
 In an ultrathin topological insulator (T<missing VAR>I) film, a hybridization gap opens inthe T<missing VAR>I surface states, and the system is expected to become either a trivialinsulator or a quantum spin Hall insulator when the chemical potential iswithin the hybridization gap.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Tunable magnetoresistance in spin-orbit coupled graphene junctions|Razieh Beiranvand,Hossein Hamzehpour###
(775238, 775238)
 Using the Landauer-Butikker formalism, we study the graphenemagneto-transport in the presence of Rashba spin-orbit interaction (R<missing VAR>SOI).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Tunable magnetoresistance in spin-orbit coupled graphene junctions|Razieh Beiranvand,Hossein Hamzehpour###
(775277, 775277)
 Using the Landauer-Butikker formalism, we study the graphenemagneto-transport in the presence of Rashba spin-orbit interaction (R<missing VAR>SOI).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SOI
###Tunable magnetoresistance in spin-orbit coupled graphene junctions|Razieh Beiranvand,Hossein Hamzehpour###
(775318, 775320)
 Weshow that the angle resolved transmission probability in the proposedstructures can be tuned by the R<missing VAR>SOI strength.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(P)
###Tunable magnetoresistance in spin-orbit coupled graphene junctions|Razieh Beiranvand,Hossein Hamzehpour###
(775344, 775346)
 The transmission spectrum showKlein tunneling in the parallel (P) magnetization configuration which can beblocked by the R<missing VAR>SOI.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SOI
###Tunable magnetoresistance in spin-orbit coupled graphene junctions|Razieh Beiranvand,Hossein Hamzehpour###
(775366, 775368)
 The transmission spectrum showKlein tunneling in the parallel (P) magnetization configuration which can beblocked by the R<missing VAR>SOI.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Tunable magnetoresistance in spin-orbit coupled graphene junctions|Razieh Beiranvand,Hossein Hamzehpour###
(775391, 775391)
 This effect is also observable for the anti-parallel (AP)magnetization configuration in different incident angle.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SOI
###Tunable magnetoresistance in spin-orbit coupled graphene junctions|Razieh Beiranvand,Hossein Hamzehpour###
(775443, 775445)
 The numerical resultsshows that the spin-polarized conductance strongly depends on the strength ofthe R<missing VAR>SOI and can be generated by tuning the magnetic exchange field and R<missing VAR>SOIstrength.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SOI
###Tunable magnetoresistance in spin-orbit coupled graphene junctions|Razieh Beiranvand,Hossein Hamzehpour###
(775470, 775472)
 The numerical resultsshows that the spin-polarized conductance strongly depends on the strength ofthe R<missing VAR>SOI and can be generated by tuning the magnetic exchange field and R<missing VAR>SOIstrength.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Tunable magnetoresistance in spin-orbit coupled graphene junctions|Razieh Beiranvand,Hossein Hamzehpour###
(775508, 775509)
 This spin-polarized conductance is a sensitive oscillatory functionof the thickness of the R<missing VAR>SO region.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Tunable magnetoresistance in spin-orbit coupled graphene junctions|Razieh Beiranvand,Hossein Hamzehpour###
(775565, 775565)
 Because of the spin-flip effect, thejunction shows a spin-valve effect with large and negative magnetoresistance(MR) and spin-magnetoresistance (SMR) in the presence of R<missing VAR>SOI.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SOI
###Tunable magnetoresistance in spin-orbit coupled graphene junctions|Razieh Beiranvand,Hossein Hamzehpour###
(775579, 775581)
 Because of the spin-flip effect, thejunction shows a spin-valve effect with large and negative magnetoresistance(MR) and spin-magnetoresistance (SMR) in the presence of R<missing VAR>SOI.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SOI
###Tunable magnetoresistance in spin-orbit coupled graphene junctions|Razieh Beiranvand,Hossein Hamzehpour###
(775589, 775591)
 When the R<missing VAR>SOI ison, the frequency and amplitude of shot-noise and Fano factors<missing VAR> oscillationsare also increased.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Mechanically tunable spontaneous vertical charge redistribution in few-layer WTe2|Zeyuan Ni,Emi Minamitani,Kazuaki Kawahara,Ryuichi Arafune,Chun-Liang Lin,Noriaki Takagi,Satoshi Watanabe###
(775690, 775692)
Mechanically tunable spontaneous vertical charge redistribution in few-layer WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, -4, ',', 2]

WTe2
###Mechanically tunable spontaneous vertical charge redistribution in few-layer WTe2|Zeyuan Ni,Emi Minamitani,Kazuaki Kawahara,Ryuichi Arafune,Chun-Liang Lin,Noriaki Takagi,Satoshi Watanabe###
(775724, 775726)
Tungsten ditelluride, WTe2, exceptionally takes a non-centrosymmetriccrystal structure in the family of transition metal dichalcogenides, andexhibits novel properties1-4, such as the nonsaturatingmagnetoresistance1 and ferroelectric-like behavior4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, -4, ',', 0]

WTe2
###Mechanically tunable spontaneous vertical charge redistribution in few-layer WTe2|Zeyuan Ni,Emi Minamitani,Kazuaki Kawahara,Ryuichi Arafune,Chun-Liang Lin,Noriaki Takagi,Satoshi Watanabe###
(775823, 775825)
 Herein, using thefirst-principles calculation, we show that unique layer stacking in WTe2generates surface dipoles with different strengths on the top and bottomsurfaces in few-layer WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, -4, ',', 1]

WTe2
###Mechanically tunable spontaneous vertical charge redistribution in few-layer WTe2|Zeyuan Ni,Emi Minamitani,Kazuaki Kawahara,Ryuichi Arafune,Chun-Liang Lin,Noriaki Takagi,Satoshi Watanabe###
(775859, 775861)
 Herein, using thefirst-principles calculation, we show that unique layer stacking in WTe2generates surface dipoles with different strengths on the top and bottomsurfaces in few-layer WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, -4, ',', 1]

WTe2
###Mechanically tunable spontaneous vertical charge redistribution in few-layer WTe2|Zeyuan Ni,Emi Minamitani,Kazuaki Kawahara,Ryuichi Arafune,Chun-Liang Lin,Noriaki Takagi,Satoshi Watanabe###
(775958, 775960)
 This could explain the ferroelectric-likebehavior recently observed in atomically thin WTe2 films4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[190.0, -4, ',', 4]

In
###Mechanically tunable spontaneous vertical charge redistribution in few-layer WTe2|Zeyuan Ni,Emi Minamitani,Kazuaki Kawahara,Ryuichi Arafune,Chun-Liang Lin,Noriaki Takagi,Satoshi Watanabe###
(775966, 775966)
 In addition,we reveal that exfoliation of the surface layer flips the out-of-plane spintextures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[198.0, -4, ',', 5]

WTe2
###Mechanically tunable spontaneous vertical charge redistribution in few-layer WTe2|Zeyuan Ni,Emi Minamitani,Kazuaki Kawahara,Ryuichi Arafune,Chun-Liang Lin,Noriaki Takagi,Satoshi Watanabe###
(776043, 776045)
 The presented results will aid in the deeper understanding,manipulation, and further exploration of the physical properties of WTe2 andrelated atom-layered materials, for applications in electronics and spintronicdevices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[275.0, -4, ',', 6]

S
###Tunnel magnetoresistance angular and bias dependence enabling tuneable wireless communication|Ewa Kowalska,Akio Fukushima,Volker Sluka,Ciarán Fowley,Attila Kákay,Yuriy Aleksandrov,Jürgen Lindner,Jürgen Fassbender,Shinji Yuasa,Alina M. Deac###
(776111, 776111)
 Spin-transfer torques (ST<missing VAR>Ts) can be exploited in order to manipulate themagnetic moments of nanomagnets, thus allowing for new consumer-orienteddevices to be designed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Tunnel magnetoresistance angular and bias dependence enabling tuneable wireless communication|Ewa Kowalska,Akio Fukushima,Volker Sluka,Ciarán Fowley,Attila Kákay,Yuriy Aleksandrov,Jürgen Lindner,Jürgen Fassbender,Shinji Yuasa,Alina M. Deac###
(776183, 776183)
 Of particular interest here are tuneableradio-frequency (R<missing VAR>F) oscillators for wireless communication.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/MgO/Fe
###Tunnel magnetoresistance angular and bias dependence enabling tuneable wireless communication|Ewa Kowalska,Akio Fukushima,Volker Sluka,Ciarán Fowley,Attila Kákay,Yuriy Aleksandrov,Jürgen Lindner,Jürgen Fassbender,Shinji Yuasa,Alina M. Deac###
(776217, 776222)
 Currently, thestructure that maximizes the output power is an Fe/MgO/Fe-type magnetic tunneljunction (MTJ) with a fixed layer magnetized in the plane of the layers and afree layer magnetized perpendicular to the plane.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Mn
###Tunnel magnetoresistance angular and bias dependence enabling tuneable wireless communication|Ewa Kowalska,Akio Fukushima,Volker Sluka,Ciarán Fowley,Attila Kákay,Yuriy Aleksandrov,Jürgen Lindner,Jürgen Fassbender,Shinji Yuasa,Alina M. Deac###
(776509, 776509)
 Thuswe expect the bias dependence of the TMR to have an even more dramatic effectin MTJs with Mn-Ga-based free layers, which could be used to design wirelessoscillators extending towards the T<missing VAR>Hz gap, but have been experimentally shownto exhibit a non-trivial TMR bias dependence.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###Tunnel magnetoresistance angular and bias dependence enabling tuneable wireless communication|Ewa Kowalska,Akio Fukushima,Volker Sluka,Ciarán Fowley,Attila Kákay,Yuriy Aleksandrov,Jürgen Lindner,Jürgen Fassbender,Shinji Yuasa,Alina M. Deac###
(776511, 776511)
 Thuswe expect the bias dependence of the TMR to have an even more dramatic effectin MTJs with Mn-Ga-based free layers, which could be used to design wirelessoscillators extending towards the T<missing VAR>Hz gap, but have been experimentally shownto exhibit a non-trivial TMR bias dependence.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

RbCr3As3
###The upper critical field and its anisotropy in RbCr$_{3}$As$_{3}$|Qimei Liang,Tong Liu,Chuanying Xi,Yuyan Han,Gang Mu,Li Pi,Zhi-An Ren,Zhaosheng Wang###
(776603, 776607)
The upper critical field and its anisotropy in RbCr3As3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 7.3, 'K', 1],[72.0, 0.35, 'K', 1],[86.0, 38, 'T', 1],[186.0, 5.5, 'K', 3],[229.0, 0.5, 'near', 4],[235.0, 1.6, 'at', 4],[310.0, 43.4, 'T', 5]

H
###The upper critical field and its anisotropy in RbCr$_{3}$As$_{3}$|Qimei Liang,Tong Liu,Chuanying Xi,Yuyan Han,Gang Mu,Li Pi,Zhi-An Ren,Zhaosheng Wang###
(776627, 776627)
 The temperature dependence of the upper critical field (Hc<missing VAR>2) in RbCr%3As3 single crystals (Tcapprox  7.3 K) has been determined bymeans of magnetoresistance measurements with temperature down to 0.35 K instatic magnetic fields up to 38 T.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 7.3, 'K', 0],[52.0, 0.35, 'K', 0],[66.0, 38, 'T', 0],[166.0, 5.5, 'K', 2],[209.0, 0.5, 'near', 3],[215.0, 1.6, 'at', 3],[290.0, 43.4, 'T', 4]

Cr
###The upper critical field and its anisotropy in RbCr$_{3}$As$_{3}$|Qimei Liang,Tong Liu,Chuanying Xi,Yuyan Han,Gang Mu,Li Pi,Zhi-An Ren,Zhaosheng Wang###
(776635, 776635)
 The temperature dependence of the upper critical field (Hc<missing VAR>2) in RbCr%3As3 single crystals (Tcapprox  7.3 K) has been determined bymeans of magnetoresistance measurements with temperature down to 0.35 K instatic magnetic fields up to 38 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 7.3, 'K', 0],[44.0, 0.35, 'K', 0],[58.0, 38, 'T', 0],[158.0, 5.5, 'K', 2],[201.0, 0.5, 'near', 3],[207.0, 1.6, 'at', 3],[282.0, 43.4, 'T', 4]

As3
###The upper critical field and its anisotropy in RbCr$_{3}$As$_{3}$|Qimei Liang,Tong Liu,Chuanying Xi,Yuyan Han,Gang Mu,Li Pi,Zhi-An Ren,Zhaosheng Wang###
(776640, 776641)
 The temperature dependence of the upper critical field (Hc<missing VAR>2) in RbCr%3As3 single crystals (Tcapprox  7.3 K) has been determined bymeans of magnetoresistance measurements with temperature down to 0.35 K instatic magnetic fields up to 38 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 7.3, 'K', 0],[38.0, 0.35, 'K', 0],[52.0, 38, 'T', 0],[152.0, 5.5, 'K', 2],[195.0, 0.5, 'near', 3],[201.0, 1.6, 'at', 3],[276.0, 43.4, 'T', 4]

H
###The upper critical field and its anisotropy in RbCr$_{3}$As$_{3}$|Qimei Liang,Tong Liu,Chuanying Xi,Yuyan Han,Gang Mu,Li Pi,Zhi-An Ren,Zhaosheng Wang###
(776716, 776716)
 The magnetic field was applied both fordirections parallel (Hparallel c<missing VAR> , Hc<missing VAR>2parallel c) and perpendicular(Hperp c<missing VAR>, Hc<missing VAR>2perp c) to the Cr chains.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 7.3, 'K', 1],[37.0, 0.35, 'K', 1],[23.0, 38, 'T', 1],[77.0, 5.5, 'K', 1],[120.0, 0.5, 'near', 2],[126.0, 1.6, 'at', 2],[201.0, 43.4, 'T', 3]

H
###The upper critical field and its anisotropy in RbCr$_{3}$As$_{3}$|Qimei Liang,Tong Liu,Chuanying Xi,Yuyan Han,Gang Mu,Li Pi,Zhi-An Ren,Zhaosheng Wang###
(776723, 776723)
 The magnetic field was applied both fordirections parallel (Hparallel c<missing VAR> , Hc<missing VAR>2parallel c) and perpendicular(Hperp c<missing VAR>, Hc<missing VAR>2perp c) to the Cr chains.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 7.3, 'K', 1],[44.0, 0.35, 'K', 1],[30.0, 38, 'T', 1],[70.0, 5.5, 'K', 1],[113.0, 0.5, 'near', 2],[119.0, 1.6, 'at', 2],[194.0, 43.4, 'T', 3]

H
###The upper critical field and its anisotropy in RbCr$_{3}$As$_{3}$|Qimei Liang,Tong Liu,Chuanying Xi,Yuyan Han,Gang Mu,Li Pi,Zhi-An Ren,Zhaosheng Wang###
(776737, 776737)
 The magnetic field was applied both fordirections parallel (Hparallel c<missing VAR> , Hc<missing VAR>2parallel c) and perpendicular(Hperp c<missing VAR>, Hc<missing VAR>2perp c) to the Cr chains.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 7.3, 'K', 1],[58.0, 0.35, 'K', 1],[44.0, 38, 'T', 1],[56.0, 5.5, 'K', 1],[99.0, 0.5, 'near', 2],[105.0, 1.6, 'at', 2],[180.0, 43.4, 'T', 3]

H
###The upper critical field and its anisotropy in RbCr$_{3}$As$_{3}$|Qimei Liang,Tong Liu,Chuanying Xi,Yuyan Han,Gang Mu,Li Pi,Zhi-An Ren,Zhaosheng Wang###
(776743, 776743)
 The magnetic field was applied both fordirections parallel (Hparallel c<missing VAR> , Hc<missing VAR>2parallel c) and perpendicular(Hperp c<missing VAR>, Hc<missing VAR>2perp c) to the Cr chains.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 7.3, 'K', 1],[64.0, 0.35, 'K', 1],[50.0, 38, 'T', 1],[50.0, 5.5, 'K', 1],[93.0, 0.5, 'near', 2],[99.0, 1.6, 'at', 2],[174.0, 43.4, 'T', 3]

Cr
###The upper critical field and its anisotropy in RbCr$_{3}$As$_{3}$|Qimei Liang,Tong Liu,Chuanying Xi,Yuyan Han,Gang Mu,Li Pi,Zhi-An Ren,Zhaosheng Wang###
(776755, 776755)
 The magnetic field was applied both fordirections parallel (Hparallel c<missing VAR> , Hc<missing VAR>2parallel c) and perpendicular(Hperp c<missing VAR>, Hc<missing VAR>2perp c) to the Cr chains.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 7.3, 'K', 1],[76.0, 0.35, 'K', 1],[62.0, 38, 'T', 1],[38.0, 5.5, 'K', 1],[81.0, 0.5, 'near', 2],[87.0, 1.6, 'at', 2],[162.0, 43.4, 'T', 3]

H
###The upper critical field and its anisotropy in RbCr$_{3}$As$_{3}$|Qimei Liang,Tong Liu,Chuanying Xi,Yuyan Han,Gang Mu,Li Pi,Zhi-An Ren,Zhaosheng Wang###
(776765, 776765)
 The curvesHc<missing VAR>2parallel c(T) and Hc<missing VAR>2perp c(T) cross at sim  5.5 K.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 7.3, 'K', 2],[86.0, 0.35, 'K', 2],[72.0, 38, 'T', 2],[28.0, 5.5, 'K', 0],[71.0, 0.5, 'near', 1],[77.0, 1.6, 'at', 1],[152.0, 43.4, 'T', 2]

H
###The upper critical field and its anisotropy in RbCr$_{3}$As$_{3}$|Qimei Liang,Tong Liu,Chuanying Xi,Yuyan Han,Gang Mu,Li Pi,Zhi-An Ren,Zhaosheng Wang###
(776777, 776777)
 The curvesHc<missing VAR>2parallel c(T) and Hc<missing VAR>2perp c(T) cross at sim  5.5 K.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 7.3, 'K', 2],[98.0, 0.35, 'K', 2],[84.0, 38, 'T', 2],[16.0, 5.5, 'K', 0],[59.0, 0.5, 'near', 1],[65.0, 1.6, 'at', 1],[140.0, 43.4, 'T', 2]

As
###The upper critical field and its anisotropy in RbCr$_{3}$As$_{3}$|Qimei Liang,Tong Liu,Chuanying Xi,Yuyan Han,Gang Mu,Li Pi,Zhi-An Ren,Zhaosheng Wang###
(776796, 776796)
 Asa result, the anisotropy parameter gamma (T)Hc<missing VAR>2perpc<missing VAR>/Hc<missing VAR>2parallel c(T) increases from 0.5 near Tc to 1.6 at lowtemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 7.3, 'K', 3],[117.0, 0.35, 'K', 3],[103.0, 38, 'T', 3],[3.0, 5.5, 'K', 1],[40.0, 0.5, 'near', 0],[46.0, 1.6, 'at', 0],[121.0, 43.4, 'T', 1]

H
###The upper critical field and its anisotropy in RbCr$_{3}$As$_{3}$|Qimei Liang,Tong Liu,Chuanying Xi,Yuyan Han,Gang Mu,Li Pi,Zhi-An Ren,Zhaosheng Wang###
(776815, 776815)
 Asa result, the anisotropy parameter gamma (T)Hc<missing VAR>2perpc<missing VAR>/Hc<missing VAR>2parallel c(T) increases from 0.5 near Tc to 1.6 at lowtemperature.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 7.3, 'K', 3],[136.0, 0.35, 'K', 3],[122.0, 38, 'T', 3],[22.0, 5.5, 'K', 1],[21.0, 0.5, 'near', 0],[27.0, 1.6, 'at', 0],[102.0, 43.4, 'T', 1]

H
###The upper critical field and its anisotropy in RbCr$_{3}$As$_{3}$|Qimei Liang,Tong Liu,Chuanying Xi,Yuyan Han,Gang Mu,Li Pi,Zhi-An Ren,Zhaosheng Wang###
(776823, 776823)
 Asa result, the anisotropy parameter gamma (T)Hc<missing VAR>2perpc<missing VAR>/Hc<missing VAR>2parallel c(T) increases from 0.5 near Tc to 1.6 at lowtemperature.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[171.0, 7.3, 'K', 3],[144.0, 0.35, 'K', 3],[130.0, 38, 'T', 3],[30.0, 5.5, 'K', 1],[13.0, 0.5, 'near', 0],[19.0, 1.6, 'at', 0],[94.0, 43.4, 'T', 1]

(WHH)
###The upper critical field and its anisotropy in RbCr$_{3}$As$_{3}$|Qimei Liang,Tong Liu,Chuanying Xi,Yuyan Han,Gang Mu,Li Pi,Zhi-An Ren,Zhaosheng Wang###
(776862, 776866)
 Fitting with the Werthamer-Helfand-Hohenberg (WHH) model yieldszero-temperature critical fields of mu0Hc<missing VAR>2parallel c<missing VAR>(0)approx  27.2T<missing VAR> and mu0Hc<missing VAR>2perp c<missing VAR>(0)approx  43.4 T, both exceeding the BCSweak-coupling Pauli limit mu0Hp1.84Tc13.4 T<missing VAR>.
Featurization successful!
0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[210.0, 7.3, 'K', 4],[183.0, 0.35, 'K', 4],[169.0, 38, 'T', 4],[69.0, 5.5, 'K', 2],[26.0, 0.5, 'near', 1],[20.0, 1.6, 'at', 1],[51.0, 43.4, 'T', 0]

H
###The upper critical field and its anisotropy in RbCr$_{3}$As$_{3}$|Qimei Liang,Tong Liu,Chuanying Xi,Yuyan Han,Gang Mu,Li Pi,Zhi-An Ren,Zhaosheng Wang###
(776885, 776885)
 Fitting with the Werthamer-Helfand-Hohenberg (WHH) model yieldszero-temperature critical fields of mu0Hc<missing VAR>2parallel c<missing VAR>(0)approx  27.2T<missing VAR> and mu0Hc<missing VAR>2perp c<missing VAR>(0)approx  43.4 T, both exceeding the BCSweak-coupling Pauli limit mu0Hp1.84Tc13.4 T<missing VAR>.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[233.0, 7.3, 'K', 4],[206.0, 0.35, 'K', 4],[192.0, 38, 'T', 4],[92.0, 5.5, 'K', 2],[49.0, 0.5, 'near', 1],[43.0, 1.6, 'at', 1],[32.0, 43.4, 'T', 0]

H
###The upper critical field and its anisotropy in RbCr$_{3}$As$_{3}$|Qimei Liang,Tong Liu,Chuanying Xi,Yuyan Han,Gang Mu,Li Pi,Zhi-An Ren,Zhaosheng Wang###
(776906, 776906)
 Fitting with the Werthamer-Helfand-Hohenberg (WHH) model yieldszero-temperature critical fields of mu0Hc<missing VAR>2parallel c<missing VAR>(0)approx  27.2T<missing VAR> and mu0Hc<missing VAR>2perp c<missing VAR>(0)approx  43.4 T, both exceeding the BCSweak-coupling Pauli limit mu0Hp1.84Tc13.4 T<missing VAR>.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[254.0, 7.3, 'K', 4],[227.0, 0.35, 'K', 4],[213.0, 38, 'T', 4],[113.0, 5.5, 'K', 2],[70.0, 0.5, 'near', 1],[64.0, 1.6, 'at', 1],[11.0, 43.4, 'T', 0]

BCS
###The upper critical field and its anisotropy in RbCr$_{3}$As$_{3}$|Qimei Liang,Tong Liu,Chuanying Xi,Yuyan Han,Gang Mu,Li Pi,Zhi-An Ren,Zhaosheng Wang###
(776926, 776928)
 Fitting with the Werthamer-Helfand-Hohenberg (WHH) model yieldszero-temperature critical fields of mu0Hc<missing VAR>2parallel c<missing VAR>(0)approx  27.2T<missing VAR> and mu0Hc<missing VAR>2perp c<missing VAR>(0)approx  43.4 T, both exceeding the BCSweak-coupling Pauli limit mu0Hp1.84Tc13.4 T<missing VAR>.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[274.0, 7.3, 'K', 4],[247.0, 0.35, 'K', 4],[233.0, 38, 'T', 4],[133.0, 5.5, 'K', 2],[90.0, 0.5, 'near', 1],[84.0, 1.6, 'at', 1],[9.0, 43.4, 'T', 0]

H
###The upper critical field and its anisotropy in RbCr$_{3}$As$_{3}$|Qimei Liang,Tong Liu,Chuanying Xi,Yuyan Han,Gang Mu,Li Pi,Zhi-An Ren,Zhaosheng Wang###
(776941, 776941)
 Fitting with the Werthamer-Helfand-Hohenberg (WHH) model yieldszero-temperature critical fields of mu0Hc<missing VAR>2parallel c<missing VAR>(0)approx  27.2T<missing VAR> and mu0Hc<missing VAR>2perp c<missing VAR>(0)approx  43.4 T, both exceeding the BCSweak-coupling Pauli limit mu0Hp1.84Tc13.4 T<missing VAR>.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[289.0, 7.3, 'K', 4],[262.0, 0.35, 'K', 4],[248.0, 38, 'T', 4],[148.0, 5.5, 'K', 2],[105.0, 0.5, 'near', 1],[99.0, 1.6, 'at', 1],[24.0, 43.4, 'T', 0]

H
###The upper critical field and its anisotropy in RbCr$_{3}$As$_{3}$|Qimei Liang,Tong Liu,Chuanying Xi,Yuyan Han,Gang Mu,Li Pi,Zhi-An Ren,Zhaosheng Wang###
(776976, 776976)
 The results indicatethat the paramagnetic pair breaking effect is strong for H parallel c<missing VAR> butabsent for H perp c<missing VAR>, which was further confirmed by the angle dependentmagnetoresistance and Hc<missing VAR>2 measurements.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[324.0, 7.3, 'K', 5],[297.0, 0.35, 'K', 5],[283.0, 38, 'T', 5],[183.0, 5.5, 'K', 3],[140.0, 0.5, 'near', 2],[134.0, 1.6, 'at', 2],[59.0, 43.4, 'T', 1]

H
###The upper critical field and its anisotropy in RbCr$_{3}$As$_{3}$|Qimei Liang,Tong Liu,Chuanying Xi,Yuyan Han,Gang Mu,Li Pi,Zhi-An Ren,Zhaosheng Wang###
(776989, 776989)
 The results indicatethat the paramagnetic pair breaking effect is strong for H parallel c<missing VAR> butabsent for H perp c<missing VAR>, which was further confirmed by the angle dependentmagnetoresistance and Hc<missing VAR>2 measurements.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[337.0, 7.3, 'K', 5],[310.0, 0.35, 'K', 5],[296.0, 38, 'T', 5],[196.0, 5.5, 'K', 3],[153.0, 0.5, 'near', 2],[147.0, 1.6, 'at', 2],[72.0, 43.4, 'T', 1]

H
###The upper critical field and its anisotropy in RbCr$_{3}$As$_{3}$|Qimei Liang,Tong Liu,Chuanying Xi,Yuyan Han,Gang Mu,Li Pi,Zhi-An Ren,Zhaosheng Wang###
(777017, 777017)
 The results indicatethat the paramagnetic pair breaking effect is strong for H parallel c<missing VAR> butabsent for H perp c<missing VAR>, which was further confirmed by the angle dependentmagnetoresistance and Hc<missing VAR>2 measurements.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[365.0, 7.3, 'K', 5],[338.0, 0.35, 'K', 5],[324.0, 38, 'T', 5],[224.0, 5.5, 'K', 3],[181.0, 0.5, 'near', 2],[175.0, 1.6, 'at', 2],[100.0, 43.4, 'T', 1]

RhSn
###Quantum oscillations and electronic structures in large Chern number semimetal RhSn|Sheng Xu,Liqin Zhou,Huan Wang,Xiao-Yan Wang,Yuan Su,Peng Cheng,Hongming Weng,Tian-Long Xia###
(777052, 777053)
Quantum oscillations and electronic structures in large Chern number semimetal RhSn.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

RhSn
###Quantum oscillations and electronic structures in large Chern number semimetal RhSn|Sheng Xu,Liqin Zhou,Huan Wang,Xiao-Yan Wang,Yuan Su,Peng Cheng,Hongming Weng,Tian-Long Xia###
(777101, 777102)
 We report the magnetoresistance, Hall effect, de Haas-van Alphen (d<missing VAR>HvA)oscillations and the electronic structures of single crystal RhSn, which is atypical material of CoSi family holding a large Chern number.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoSi
###Quantum oscillations and electronic structures in large Chern number semimetal RhSn|Sheng Xu,Liqin Zhou,Huan Wang,Xiao-Yan Wang,Yuan Su,Peng Cheng,Hongming Weng,Tian-Long Xia###
(777118, 777119)
 We report the magnetoresistance, Hall effect, de Haas-van Alphen (d<missing VAR>HvA)oscillations and the electronic structures of single crystal RhSn, which is atypical material of CoSi family holding a large Chern number.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Quantum oscillations and electronic structures in large Chern number semimetal RhSn|Sheng Xu,Liqin Zhou,Huan Wang,Xiao-Yan Wang,Yuan Su,Peng Cheng,Hongming Weng,Tian-Long Xia###
(777149, 777149)
 The largeunsaturated magnetoresistance is observed with B//[001].
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

RhSn
###Quantum oscillations and electronic structures in large Chern number semimetal RhSn|Sheng Xu,Liqin Zhou,Huan Wang,Xiao-Yan Wang,Yuan Su,Peng Cheng,Hongming Weng,Tian-Long Xia###
(777170, 777171)
 The Hall resistivitycurve indicates that RhSn is a multi-band system with high mobility.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Quantum oscillations and electronic structures in large Chern number semimetal RhSn|Sheng Xu,Liqin Zhou,Huan Wang,Xiao-Yan Wang,Yuan Su,Peng Cheng,Hongming Weng,Tian-Long Xia###
(777257, 777257)
 Ten fundamental frequencies are extracted after the fast Fouriertransform analysis of the d<missing VAR>HvA oscillations with B//[001] configuration.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F1
###Quantum oscillations and electronic structures in large Chern number semimetal RhSn|Sheng Xu,Liqin Zhou,Huan Wang,Xiao-Yan Wang,Yuan Su,Peng Cheng,Hongming Weng,Tian-Long Xia###
(777276, 777277)
 Thetwo low frequencies F1 and F2 do not change obviously and the two highfrequencies F9 and F10 evolve into four when B rotates from B//[001] toB//[110], which is consistent with the band structure in the first-principlescalculations with spin-orbit coupling (SOC).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F2
###Quantum oscillations and electronic structures in large Chern number semimetal RhSn|Sheng Xu,Liqin Zhou,Huan Wang,Xiao-Yan Wang,Yuan Su,Peng Cheng,Hongming Weng,Tian-Long Xia###
(777281, 777282)
 Thetwo low frequencies F1 and F2 do not change obviously and the two highfrequencies F9 and F10 evolve into four when B rotates from B//[001] toB//[110], which is consistent with the band structure in the first-principlescalculations with spin-orbit coupling (SOC).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F9
###Quantum oscillations and electronic structures in large Chern number semimetal RhSn|Sheng Xu,Liqin Zhou,Huan Wang,Xiao-Yan Wang,Yuan Su,Peng Cheng,Hongming Weng,Tian-Long Xia###
(777303, 777304)
 Thetwo low frequencies F1 and F2 do not change obviously and the two highfrequencies F9 and F10 evolve into four when B rotates from B//[001] toB//[110], which is consistent with the band structure in the first-principlescalculations with spin-orbit coupling (SOC).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F10
###Quantum oscillations and electronic structures in large Chern number semimetal RhSn|Sheng Xu,Liqin Zhou,Huan Wang,Xiao-Yan Wang,Yuan Su,Peng Cheng,Hongming Weng,Tian-Long Xia###
(777308, 777309)
 Thetwo low frequencies F1 and F2 do not change obviously and the two highfrequencies F9 and F10 evolve into four when B rotates from B//[001] toB//[110], which is consistent with the band structure in the first-principlescalculations with spin-orbit coupling (SOC).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Quantum oscillations and electronic structures in large Chern number semimetal RhSn|Sheng Xu,Liqin Zhou,Huan Wang,Xiao-Yan Wang,Yuan Su,Peng Cheng,Hongming Weng,Tian-Long Xia###
(777319, 777319)
 Thetwo low frequencies F1 and F2 do not change obviously and the two highfrequencies F9 and F10 evolve into four when B rotates from B//[001] toB//[110], which is consistent with the band structure in the first-principlescalculations with spin-orbit coupling (SOC).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Quantum oscillations and electronic structures in large Chern number semimetal RhSn|Sheng Xu,Liqin Zhou,Huan Wang,Xiao-Yan Wang,Yuan Su,Peng Cheng,Hongming Weng,Tian-Long Xia###
(777325, 777325)
 Thetwo low frequencies F1 and F2 do not change obviously and the two highfrequencies F9 and F10 evolve into four when B rotates from B//[001] toB//[110], which is consistent with the band structure in the first-principlescalculations with spin-orbit coupling (SOC).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Quantum oscillations and electronic structures in large Chern number semimetal RhSn|Sheng Xu,Liqin Zhou,Huan Wang,Xiao-Yan Wang,Yuan Su,Peng Cheng,Hongming Weng,Tian-Long Xia###
(777335, 777335)
 Thetwo low frequencies F1 and F2 do not change obviously and the two highfrequencies F9 and F10 evolve into four when B rotates from B//[001] toB//[110], which is consistent with the band structure in the first-principlescalculations with spin-orbit coupling (SOC).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(SOC)
###Quantum oscillations and electronic structures in large Chern number semimetal RhSn|Sheng Xu,Liqin Zhou,Huan Wang,Xiao-Yan Wang,Yuan Su,Peng Cheng,Hongming Weng,Tian-Long Xia###
(777376, 777380)
 Thetwo low frequencies F1 and F2 do not change obviously and the two highfrequencies F9 and F10 evolve into four when B rotates from B//[001] toB//[110], which is consistent with the band structure in the first-principlescalculations with spin-orbit coupling (SOC).
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Quantum oscillations and electronic structures in large Chern number semimetal RhSn|Sheng Xu,Liqin Zhou,Huan Wang,Xiao-Yan Wang,Yuan Su,Peng Cheng,Hongming Weng,Tian-Long Xia###
(777424, 777424)
 The extracted Berry phases of therelative pockets show a good agreement with the Chern number pm4 (with SOC)in the first-principles calculations.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

RhSn
###Quantum oscillations and electronic structures in large Chern number semimetal RhSn|Sheng Xu,Liqin Zhou,Huan Wang,Xiao-Yan Wang,Yuan Su,Peng Cheng,Hongming Weng,Tian-Long Xia###
(777452, 777453)
 Above all, our studies indicate that RhSnis an ideal platform to study the unconventional chiral fermions and thesurface states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin effects in single electron tunneling|J. Barnas,I. Weymann###
(777602, 777602)
 In this review we present and discuss recent theoretical results onelectron and spin transport through ferromagnetic mesoscopic junctionsincluding two or more barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin effects in single electron tunneling|J. Barnas,I. Weymann###
(777931, 777931)
 In the former case we distinguish between thesequential tunnelling and cotunneling regimes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin effects in single electron tunneling|J. Barnas,I. Weymann###
(777959, 777959)
 In the strong coupling regime weconcentrate on the Kondo phenomenon, which in the case of transport throughquantum dots or molecules leads to an enhanced conductance and to a pronouncedzero-bias Kondo peak in the differential conductance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La
###Magnetotransport in La(Fe,Ru)AsO as a probe of band structure and mobility|I. Pallecchi,F. Bernardini,M. Tropeano,A. Palenzona,A. Martinelli,C. Ferdeghini,M. Vignolo,S. Massidda,M. Putti###
(778054, 778054)
Magnetotransport in La(Fe,Ru)AsO as a probe of band structure and mobility.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[278.0, 18.6, 'm', 2],[346.0, 10, 'K', 2]

Fe
###Magnetotransport in La(Fe,Ru)AsO as a probe of band structure and mobility|I. Pallecchi,F. Bernardini,M. Tropeano,A. Palenzona,A. Martinelli,C. Ferdeghini,M. Vignolo,S. Massidda,M. Putti###
(778056, 778056)
Magnetotransport in La(Fe,Ru)AsO as a probe of band structure and mobility.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[276.0, 18.6, 'm', 2],[344.0, 10, 'K', 2]

Ru
###Magnetotransport in La(Fe,Ru)AsO as a probe of band structure and mobility|I. Pallecchi,F. Bernardini,M. Tropeano,A. Palenzona,A. Martinelli,C. Ferdeghini,M. Vignolo,S. Massidda,M. Putti###
(778058, 778058)
Magnetotransport in La(Fe,Ru)AsO as a probe of band structure and mobility.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[274.0, 18.6, 'm', 2],[342.0, 10, 'K', 2]

AsO
###Magnetotransport in La(Fe,Ru)AsO as a probe of band structure and mobility|I. Pallecchi,F. Bernardini,M. Tropeano,A. Palenzona,A. Martinelli,C. Ferdeghini,M. Vignolo,S. Massidda,M. Putti###
(778060, 778061)
Magnetotransport in La(Fe,Ru)AsO as a probe of band structure and mobility.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[271.0, 18.6, 'm', 2],[339.0, 10, 'K', 2]

In
###Magnetotransport in La(Fe,Ru)AsO as a probe of band structure and mobility|I. Pallecchi,F. Bernardini,M. Tropeano,A. Palenzona,A. Martinelli,C. Ferdeghini,M. Vignolo,S. Massidda,M. Putti###
(778080, 778080)
 In this work we investigate the Ru substituted LaFeAsO compound, by studyingthe magnetotransport behaviour and its relationship with the band structure, indifferent regimes of temperature, magnetic field and Ru content.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[252.0, 18.6, 'm', 1],[320.0, 10, 'K', 1]

Ru
###Magnetotransport in La(Fe,Ru)AsO as a probe of band structure and mobility|I. Pallecchi,F. Bernardini,M. Tropeano,A. Palenzona,A. Martinelli,C. Ferdeghini,M. Vignolo,S. Massidda,M. Putti###
(778092, 778092)
 In this work we investigate the Ru substituted LaFeAsO compound, by studyingthe magnetotransport behaviour and its relationship with the band structure, indifferent regimes of temperature, magnetic field and Ru content.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[240.0, 18.6, 'm', 1],[308.0, 10, 'K', 1]

LaFeAsO
###Magnetotransport in La(Fe,Ru)AsO as a probe of band structure and mobility|I. Pallecchi,F. Bernardini,M. Tropeano,A. Palenzona,A. Martinelli,C. Ferdeghini,M. Vignolo,S. Massidda,M. Putti###
(778096, 778099)
 In this work we investigate the Ru substituted LaFeAsO compound, by studyingthe magnetotransport behaviour and its relationship with the band structure, indifferent regimes of temperature, magnetic field and Ru content.
Featurization terminated normally.
0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[233.0, 18.6, 'm', 1],[301.0, 10, 'K', 1]

Ru
###Magnetotransport in La(Fe,Ru)AsO as a probe of band structure and mobility|I. Pallecchi,F. Bernardini,M. Tropeano,A. Palenzona,A. Martinelli,C. Ferdeghini,M. Vignolo,S. Massidda,M. Putti###
(778148, 778148)
 In this work we investigate the Ru substituted LaFeAsO compound, by studyingthe magnetotransport behaviour and its relationship with the band structure, indifferent regimes of temperature, magnetic field and Ru content.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[184.0, 18.6, 'm', 1],[252.0, 10, 'K', 1]

In
###Magnetotransport in La(Fe,Ru)AsO as a probe of band structure and mobility|I. Pallecchi,F. Bernardini,M. Tropeano,A. Palenzona,A. Martinelli,C. Ferdeghini,M. Vignolo,S. Massidda,M. Putti###
(778153, 778153)
 In particularwe analyse the magnetoresistance of LaFe1-xRuxAsO (0 < x<missing VAR> < 0.6) samples withthe support of ab initio calculations and we find out that in the whole series(i) the transport is dominated by electron bands only; (ii) themagnetoresistance exhibits distinctive features related to the presence ofDirac cones; indeed, ab initio calculations confirm the presence of anisotropicDirac cones in the band structure; (iii) the low temperature mobility isexceptionally high and reaches 18.6 m2/(Vs) in the Ru-free sample at T<missing VAR>2K, inthe extreme limit of a single Landau level occupied in the Dirac cones; (iv)the mobility drops abruptly above 10K-15K; (v) the disorder has a very weakeffect on the band mobilities and on the transport properties; (vi) thereexists a correlation between the temperature ranges of Dirac cones and SD<missing VAR>Wcarrier condensation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 18.6, 'm', 0],[247.0, 10, 'K', 0]

LaFe1-x
###Magnetotransport in La(Fe,Ru)AsO as a probe of band structure and mobility|I. Pallecchi,F. Bernardini,M. Tropeano,A. Palenzona,A. Martinelli,C. Ferdeghini,M. Vignolo,S. Massidda,M. Putti###
(778168, 778172)
 In particularwe analyse the magnetoresistance of LaFe1-xRuxAsO (0 < x<missing VAR> < 0.6) samples withthe support of ab initio calculations and we find out that in the whole series(i) the transport is dominated by electron bands only; (ii) themagnetoresistance exhibits distinctive features related to the presence ofDirac cones; indeed, ab initio calculations confirm the presence of anisotropicDirac cones in the band structure; (iii) the low temperature mobility isexceptionally high and reaches 18.6 m2/(Vs) in the Ru-free sample at T<missing VAR>2K, inthe extreme limit of a single Landau level occupied in the Dirac cones; (iv)the mobility drops abruptly above 10K-15K; (v) the disorder has a very weakeffect on the band mobilities and on the transport properties; (vi) thereexists a correlation between the temperature ranges of Dirac cones and SD<missing VAR>Wcarrier condensation.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[160.0, 18.6, 'm', 0],[228.0, 10, 'K', 0]

AsO
###Magnetotransport in La(Fe,Ru)AsO as a probe of band structure and mobility|I. Pallecchi,F. Bernardini,M. Tropeano,A. Palenzona,A. Martinelli,C. Ferdeghini,M. Vignolo,S. Massidda,M. Putti###
(778174, 778175)
 In particularwe analyse the magnetoresistance of LaFe1-xRuxAsO (0 < x<missing VAR> < 0.6) samples withthe support of ab initio calculations and we find out that in the whole series(i) the transport is dominated by electron bands only; (ii) themagnetoresistance exhibits distinctive features related to the presence ofDirac cones; indeed, ab initio calculations confirm the presence of anisotropicDirac cones in the band structure; (iii) the low temperature mobility isexceptionally high and reaches 18.6 m2/(Vs) in the Ru-free sample at T<missing VAR>2K, inthe extreme limit of a single Landau level occupied in the Dirac cones; (iv)the mobility drops abruptly above 10K-15K; (v) the disorder has a very weakeffect on the band mobilities and on the transport properties; (vi) thereexists a correlation between the temperature ranges of Dirac cones and SD<missing VAR>Wcarrier condensation.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 18.6, 'm', 0],[225.0, 10, 'K', 0]

Ru
###Magnetotransport in La(Fe,Ru)AsO as a probe of band structure and mobility|I. Pallecchi,F. Bernardini,M. Tropeano,A. Palenzona,A. Martinelli,C. Ferdeghini,M. Vignolo,S. Massidda,M. Putti###
(778343, 778343)
 In particularwe analyse the magnetoresistance of LaFe1-xRuxAsO (0 < x<missing VAR> < 0.6) samples withthe support of ab initio calculations and we find out that in the whole series(i) the transport is dominated by electron bands only; (ii) themagnetoresistance exhibits distinctive features related to the presence ofDirac cones; indeed, ab initio calculations confirm the presence of anisotropicDirac cones in the band structure; (iii) the low temperature mobility isexceptionally high and reaches 18.6 m2/(Vs) in the Ru-free sample at T<missing VAR>2K, inthe extreme limit of a single Landau level occupied in the Dirac cones; (iv)the mobility drops abruptly above 10K-15K; (v) the disorder has a very weakeffect on the band mobilities and on the transport properties; (vi) thereexists a correlation between the temperature ranges of Dirac cones and SD<missing VAR>Wcarrier condensation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 18.6, 'm', 0],[57.0, 10, 'K', 0]

K
###Magnetotransport in La(Fe,Ru)AsO as a probe of band structure and mobility|I. Pallecchi,F. Bernardini,M. Tropeano,A. Palenzona,A. Martinelli,C. Ferdeghini,M. Vignolo,S. Massidda,M. Putti###
(778353, 778353)
 In particularwe analyse the magnetoresistance of LaFe1-xRuxAsO (0 < x<missing VAR> < 0.6) samples withthe support of ab initio calculations and we find out that in the whole series(i) the transport is dominated by electron bands only; (ii) themagnetoresistance exhibits distinctive features related to the presence ofDirac cones; indeed, ab initio calculations confirm the presence of anisotropicDirac cones in the band structure; (iii) the low temperature mobility isexceptionally high and reaches 18.6 m2/(Vs) in the Ru-free sample at T<missing VAR>2K, inthe extreme limit of a single Landau level occupied in the Dirac cones; (iv)the mobility drops abruptly above 10K-15K; (v) the disorder has a very weakeffect on the band mobilities and on the transport properties; (vi) thereexists a correlation between the temperature ranges of Dirac cones and SD<missing VAR>Wcarrier condensation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 18.6, 'm', 0],[47.0, 10, 'K', 0]

K
###Magnetotransport in La(Fe,Ru)AsO as a probe of band structure and mobility|I. Pallecchi,F. Bernardini,M. Tropeano,A. Palenzona,A. Martinelli,C. Ferdeghini,M. Vignolo,S. Massidda,M. Putti###
(778403, 778403)
 In particularwe analyse the magnetoresistance of LaFe1-xRuxAsO (0 < x<missing VAR> < 0.6) samples withthe support of ab initio calculations and we find out that in the whole series(i) the transport is dominated by electron bands only; (ii) themagnetoresistance exhibits distinctive features related to the presence ofDirac cones; indeed, ab initio calculations confirm the presence of anisotropicDirac cones in the band structure; (iii) the low temperature mobility isexceptionally high and reaches 18.6 m2/(Vs) in the Ru-free sample at T<missing VAR>2K, inthe extreme limit of a single Landau level occupied in the Dirac cones; (iv)the mobility drops abruptly above 10K-15K; (v) the disorder has a very weakeffect on the band mobilities and on the transport properties; (vi) thereexists a correlation between the temperature ranges of Dirac cones and SD<missing VAR>Wcarrier condensation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 18.6, 'm', 0],[3.0, 10, 'K', 0]

S
###Magnetotransport in La(Fe,Ru)AsO as a probe of band structure and mobility|I. Pallecchi,F. Bernardini,M. Tropeano,A. Palenzona,A. Martinelli,C. Ferdeghini,M. Vignolo,S. Massidda,M. Putti###
(778473, 778473)
 In particularwe analyse the magnetoresistance of LaFe1-xRuxAsO (0 < x<missing VAR> < 0.6) samples withthe support of ab initio calculations and we find out that in the whole series(i) the transport is dominated by electron bands only; (ii) themagnetoresistance exhibits distinctive features related to the presence ofDirac cones; indeed, ab initio calculations confirm the presence of anisotropicDirac cones in the band structure; (iii) the low temperature mobility isexceptionally high and reaches 18.6 m2/(Vs) in the Ru-free sample at T<missing VAR>2K, inthe extreme limit of a single Landau level occupied in the Dirac cones; (iv)the mobility drops abruptly above 10K-15K; (v) the disorder has a very weakeffect on the band mobilities and on the transport properties; (vi) thereexists a correlation between the temperature ranges of Dirac cones and SD<missing VAR>Wcarrier condensation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 18.6, 'm', 0],[73.0, 10, 'K', 0]

W
###Magnetotransport in La(Fe,Ru)AsO as a probe of band structure and mobility|I. Pallecchi,F. Bernardini,M. Tropeano,A. Palenzona,A. Martinelli,C. Ferdeghini,M. Vignolo,S. Massidda,M. Putti###
(778475, 778475)
 In particularwe analyse the magnetoresistance of LaFe1-xRuxAsO (0 < x<missing VAR> < 0.6) samples withthe support of ab initio calculations and we find out that in the whole series(i) the transport is dominated by electron bands only; (ii) themagnetoresistance exhibits distinctive features related to the presence ofDirac cones; indeed, ab initio calculations confirm the presence of anisotropicDirac cones in the band structure; (iii) the low temperature mobility isexceptionally high and reaches 18.6 m2/(Vs) in the Ru-free sample at T<missing VAR>2K, inthe extreme limit of a single Landau level occupied in the Dirac cones; (iv)the mobility drops abruptly above 10K-15K; (v) the disorder has a very weakeffect on the band mobilities and on the transport properties; (vi) thereexists a correlation between the temperature ranges of Dirac cones and SD<missing VAR>Wcarrier condensation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 18.6, 'm', 0],[75.0, 10, 'K', 0]

F
###Magnetotransport in La(Fe,Ru)AsO as a probe of band structure and mobility|I. Pallecchi,F. Bernardini,M. Tropeano,A. Palenzona,A. Martinelli,C. Ferdeghini,M. Vignolo,S. Massidda,M. Putti###
(778516, 778516)
 These findings may be of crucial importance in theinvestigation of the pairing mechanism in the F-doped superconductingLa(Fe,Ru)As(O,F) compounds related to this series of parent compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[184.0, 18.6, 'm', 1],[116.0, 10, 'K', 1]

La
###Magnetotransport in La(Fe,Ru)AsO as a probe of band structure and mobility|I. Pallecchi,F. Bernardini,M. Tropeano,A. Palenzona,A. Martinelli,C. Ferdeghini,M. Vignolo,S. Massidda,M. Putti###
(778523, 778523)
 These findings may be of crucial importance in theinvestigation of the pairing mechanism in the F-doped superconductingLa(Fe,Ru)As(O,F) compounds related to this series of parent compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[191.0, 18.6, 'm', 1],[123.0, 10, 'K', 1]

Fe
###Magnetotransport in La(Fe,Ru)AsO as a probe of band structure and mobility|I. Pallecchi,F. Bernardini,M. Tropeano,A. Palenzona,A. Martinelli,C. Ferdeghini,M. Vignolo,S. Massidda,M. Putti###
(778525, 778525)
 These findings may be of crucial importance in theinvestigation of the pairing mechanism in the F-doped superconductingLa(Fe,Ru)As(O,F) compounds related to this series of parent compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[193.0, 18.6, 'm', 1],[125.0, 10, 'K', 1]

Ru
###Magnetotransport in La(Fe,Ru)AsO as a probe of band structure and mobility|I. Pallecchi,F. Bernardini,M. Tropeano,A. Palenzona,A. Martinelli,C. Ferdeghini,M. Vignolo,S. Massidda,M. Putti###
(778527, 778527)
 These findings may be of crucial importance in theinvestigation of the pairing mechanism in the F-doped superconductingLa(Fe,Ru)As(O,F) compounds related to this series of parent compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[195.0, 18.6, 'm', 1],[127.0, 10, 'K', 1]

As
###Magnetotransport in La(Fe,Ru)AsO as a probe of band structure and mobility|I. Pallecchi,F. Bernardini,M. Tropeano,A. Palenzona,A. Martinelli,C. Ferdeghini,M. Vignolo,S. Massidda,M. Putti###
(778529, 778529)
 These findings may be of crucial importance in theinvestigation of the pairing mechanism in the F-doped superconductingLa(Fe,Ru)As(O,F) compounds related to this series of parent compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[197.0, 18.6, 'm', 1],[129.0, 10, 'K', 1]

O
###Magnetotransport in La(Fe,Ru)AsO as a probe of band structure and mobility|I. Pallecchi,F. Bernardini,M. Tropeano,A. Palenzona,A. Martinelli,C. Ferdeghini,M. Vignolo,S. Massidda,M. Putti###
(778531, 778531)
 These findings may be of crucial importance in theinvestigation of the pairing mechanism in the F-doped superconductingLa(Fe,Ru)As(O,F) compounds related to this series of parent compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[199.0, 18.6, 'm', 1],[131.0, 10, 'K', 1]

F
###Magnetotransport in La(Fe,Ru)AsO as a probe of band structure and mobility|I. Pallecchi,F. Bernardini,M. Tropeano,A. Palenzona,A. Martinelli,C. Ferdeghini,M. Vignolo,S. Massidda,M. Putti###
(778533, 778533)
 These findings may be of crucial importance in theinvestigation of the pairing mechanism in the F-doped superconductingLa(Fe,Ru)As(O,F) compounds related to this series of parent compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[201.0, 18.6, 'm', 1],[133.0, 10, 'K', 1]

Ba1-xK
###Transport properties and asymmetric scattering in Ba$_{1-x}$K$_x$Fe$_2$As$_2$ single crystals compared to the electron doped counterparts Ba(Fe$_{1-x}$Co$_{x}$)$_{2}$As$_{2}$}|Bing Shen,Huan Yang,Zhao-Sheng Wang,Fei Han,Bin Zeng,Lei Shan,Cong Ren,Hai-Hu Wen###
(778573, 778577)
Transport properties and asymmetric scattering in Ba1-xKx<missing VAR>Fe2As2 single crystals compared to the electron doped counterparts Ba(Fe1-xCox)2As2.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[204.0, 300, 'K', 3],[388.0, 80, 'K', 6],[391.0, 100, 'K', 6]

Fe2As2
###Transport properties and asymmetric scattering in Ba$_{1-x}$K$_x$Fe$_2$As$_2$ single crystals compared to the electron doped counterparts Ba(Fe$_{1-x}$Co$_{x}$)$_{2}$As$_{2}$}|Bing Shen,Huan Yang,Zhao-Sheng Wang,Fei Han,Bin Zeng,Lei Shan,Cong Ren,Hai-Hu Wen###
(778579, 778582)
Transport properties and asymmetric scattering in Ba1-xKx<missing VAR>Fe2As2 single crystals compared to the electron doped counterparts Ba(Fe1-xCox)2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[199.0, 300, 'K', 3],[383.0, 80, 'K', 6],[386.0, 100, 'K', 6]

Ba
###Transport properties and asymmetric scattering in Ba$_{1-x}$K$_x$Fe$_2$As$_2$ single crystals compared to the electron doped counterparts Ba(Fe$_{1-x}$Co$_{x}$)$_{2}$As$_{2}$}|Bing Shen,Huan Yang,Zhao-Sheng Wang,Fei Han,Bin Zeng,Lei Shan,Cong Ren,Hai-Hu Wen###
(778600, 778600)
Transport properties and asymmetric scattering in Ba1-xKx<missing VAR>Fe2As2 single crystals compared to the electron doped counterparts Ba(Fe1-xCox)2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 300, 'K', 3],[365.0, 80, 'K', 6],[368.0, 100, 'K', 6]

Fe1-xCo
###Transport properties and asymmetric scattering in Ba$_{1-x}$K$_x$Fe$_2$As$_2$ single crystals compared to the electron doped counterparts Ba(Fe$_{1-x}$Co$_{x}$)$_{2}$As$_{2}$}|Bing Shen,Huan Yang,Zhao-Sheng Wang,Fei Han,Bin Zeng,Lei Shan,Cong Ren,Hai-Hu Wen###
(778602, 778606)
Transport properties and asymmetric scattering in Ba1-xKx<missing VAR>Fe2As2 single crystals compared to the electron doped counterparts Ba(Fe1-xCox)2As2.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[175.0, 300, 'K', 3],[359.0, 80, 'K', 6],[362.0, 100, 'K', 6]

As2
###Transport properties and asymmetric scattering in Ba$_{1-x}$K$_x$Fe$_2$As$_2$ single crystals compared to the electron doped counterparts Ba(Fe$_{1-x}$Co$_{x}$)$_{2}$As$_{2}$}|Bing Shen,Huan Yang,Zhao-Sheng Wang,Fei Han,Bin Zeng,Lei Shan,Cong Ren,Hai-Hu Wen###
(778610, 778611)
Transport properties and asymmetric scattering in Ba1-xKx<missing VAR>Fe2As2 single crystals compared to the electron doped counterparts Ba(Fe1-xCox)2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[170.0, 300, 'K', 3],[354.0, 80, 'K', 6],[357.0, 100, 'K', 6]

Ba1-xK
###Transport properties and asymmetric scattering in Ba$_{1-x}$K$_x$Fe$_2$As$_2$ single crystals compared to the electron doped counterparts Ba(Fe$_{1-x}$Co$_{x}$)$_{2}$As$_{2}$}|Bing Shen,Huan Yang,Zhao-Sheng Wang,Fei Han,Bin Zeng,Lei Shan,Cong Ren,Hai-Hu Wen###
(778642, 778646)
 Resistivity, Hall effect and magnetoresistance have been investigatedsystematically on single crystals of Ba1-xKx<missing VAR>Fe2As2 ranging fromundoped to optimally doped regions.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[135.0, 300, 'K', 2],[319.0, 80, 'K', 5],[322.0, 100, 'K', 5]

Fe2As2
###Transport properties and asymmetric scattering in Ba$_{1-x}$K$_x$Fe$_2$As$_2$ single crystals compared to the electron doped counterparts Ba(Fe$_{1-x}$Co$_{x}$)$_{2}$As$_{2}$}|Bing Shen,Huan Yang,Zhao-Sheng Wang,Fei Han,Bin Zeng,Lei Shan,Cong Ren,Hai-Hu Wen###
(778648, 778651)
 Resistivity, Hall effect and magnetoresistance have been investigatedsystematically on single crystals of Ba1-xKx<missing VAR>Fe2As2 ranging fromundoped to optimally doped regions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 300, 'K', 2],[314.0, 80, 'K', 5],[317.0, 100, 'K', 5]

Ba1-xK
###Transport properties and asymmetric scattering in Ba$_{1-x}$K$_x$Fe$_2$As$_2$ single crystals compared to the electron doped counterparts Ba(Fe$_{1-x}$Co$_{x}$)$_{2}$As$_{2}$}|Bing Shen,Huan Yang,Zhao-Sheng Wang,Fei Han,Bin Zeng,Lei Shan,Cong Ren,Hai-Hu Wen###
(778714, 778718)
 It is found that the resistivity in the normalstate of Ba1-xKx<missing VAR>Fe2As2 is insensitive to the potassium dopingconcentration, which is very different from the electron doped counterpartBa(Fe1-xCox)2As2, where the resistivity at 300 K reduces tohalf value of the undoped one when the system is optimally doped.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[63.0, 300, 'K', 0],[247.0, 80, 'K', 3],[250.0, 100, 'K', 3]

Fe2As2
###Transport properties and asymmetric scattering in Ba$_{1-x}$K$_x$Fe$_2$As$_2$ single crystals compared to the electron doped counterparts Ba(Fe$_{1-x}$Co$_{x}$)$_{2}$As$_{2}$}|Bing Shen,Huan Yang,Zhao-Sheng Wang,Fei Han,Bin Zeng,Lei Shan,Cong Ren,Hai-Hu Wen###
(778720, 778723)
 It is found that the resistivity in the normalstate of Ba1-xKx<missing VAR>Fe2As2 is insensitive to the potassium dopingconcentration, which is very different from the electron doped counterpartBa(Fe1-xCox)2As2, where the resistivity at 300 K reduces tohalf value of the undoped one when the system is optimally doped.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 300, 'K', 0],[242.0, 80, 'K', 3],[245.0, 100, 'K', 3]

Ba
###Transport properties and asymmetric scattering in Ba$_{1-x}$K$_x$Fe$_2$As$_2$ single crystals compared to the electron doped counterparts Ba(Fe$_{1-x}$Co$_{x}$)$_{2}$As$_{2}$}|Bing Shen,Huan Yang,Zhao-Sheng Wang,Fei Han,Bin Zeng,Lei Shan,Cong Ren,Hai-Hu Wen###
(778760, 778760)
 It is found that the resistivity in the normalstate of Ba1-xKx<missing VAR>Fe2As2 is insensitive to the potassium dopingconcentration, which is very different from the electron doped counterpartBa(Fe1-xCox)2As2, where the resistivity at 300 K reduces tohalf value of the undoped one when the system is optimally doped.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 300, 'K', 0],[205.0, 80, 'K', 3],[208.0, 100, 'K', 3]

Fe1-xCo
###Transport properties and asymmetric scattering in Ba$_{1-x}$K$_x$Fe$_2$As$_2$ single crystals compared to the electron doped counterparts Ba(Fe$_{1-x}$Co$_{x}$)$_{2}$As$_{2}$}|Bing Shen,Huan Yang,Zhao-Sheng Wang,Fei Han,Bin Zeng,Lei Shan,Cong Ren,Hai-Hu Wen###
(778762, 778766)
 It is found that the resistivity in the normalstate of Ba1-xKx<missing VAR>Fe2As2 is insensitive to the potassium dopingconcentration, which is very different from the electron doped counterpartBa(Fe1-xCox)2As2, where the resistivity at 300 K reduces tohalf value of the undoped one when the system is optimally doped.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[15.0, 300, 'K', 0],[199.0, 80, 'K', 3],[202.0, 100, 'K', 3]

As2
###Transport properties and asymmetric scattering in Ba$_{1-x}$K$_x$Fe$_2$As$_2$ single crystals compared to the electron doped counterparts Ba(Fe$_{1-x}$Co$_{x}$)$_{2}$As$_{2}$}|Bing Shen,Huan Yang,Zhao-Sheng Wang,Fei Han,Bin Zeng,Lei Shan,Cong Ren,Hai-Hu Wen###
(778770, 778771)
 It is found that the resistivity in the normalstate of Ba1-xKx<missing VAR>Fe2As2 is insensitive to the potassium dopingconcentration, which is very different from the electron doped counterpartBa(Fe1-xCox)2As2, where the resistivity at 300 K reduces tohalf value of the undoped one when the system is optimally doped.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 300, 'K', 0],[194.0, 80, 'K', 3],[197.0, 100, 'K', 3]

In
###Transport properties and asymmetric scattering in Ba$_{1-x}$K$_x$Fe$_2$As$_2$ single crystals compared to the electron doped counterparts Ba(Fe$_{1-x}$Co$_{x}$)$_{2}$As$_{2}$}|Bing Shen,Huan Yang,Zhao-Sheng Wang,Fei Han,Bin Zeng,Lei Shan,Cong Ren,Hai-Hu Wen###
(778813, 778813)
 In starkcontrast, the Hall coefficient R<missing VAR>H changes suddenly from a negative value inthe undoped sample to a positive one with slight K-doping, and it keepslowering with further doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 300, 'K', 1],[152.0, 80, 'K', 2],[155.0, 100, 'K', 2]

H
###Transport properties and asymmetric scattering in Ba$_{1-x}$K$_x$Fe$_2$As$_2$ single crystals compared to the electron doped counterparts Ba(Fe$_{1-x}$Co$_{x}$)$_{2}$As$_{2}$}|Bing Shen,Huan Yang,Zhao-Sheng Wang,Fei Han,Bin Zeng,Lei Shan,Cong Ren,Hai-Hu Wen###
(778828, 778828)
 In starkcontrast, the Hall coefficient R<missing VAR>H changes suddenly from a negative value inthe undoped sample to a positive one with slight K-doping, and it keepslowering with further doping.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 300, 'K', 1],[137.0, 80, 'K', 2],[140.0, 100, 'K', 2]

K
###Transport properties and asymmetric scattering in Ba$_{1-x}$K$_x$Fe$_2$As$_2$ single crystals compared to the electron doped counterparts Ba(Fe$_{1-x}$Co$_{x}$)$_{2}$As$_{2}$}|Bing Shen,Huan Yang,Zhao-Sheng Wang,Fei Han,Bin Zeng,Lei Shan,Cong Ren,Hai-Hu Wen###
(778863, 778863)
 In starkcontrast, the Hall coefficient R<missing VAR>H changes suddenly from a negative value inthe undoped sample to a positive one with slight K-doping, and it keepslowering with further doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 300, 'K', 1],[102.0, 80, 'K', 2],[105.0, 100, 'K', 2]

In
###Transport properties and asymmetric scattering in Ba$_{1-x}$K$_x$Fe$_2$As$_2$ single crystals compared to the electron doped counterparts Ba(Fe$_{1-x}$Co$_{x}$)$_{2}$As$_{2}$}|Bing Shen,Huan Yang,Zhao-Sheng Wang,Fei Han,Bin Zeng,Lei Shan,Cong Ren,Hai-Hu Wen###
(779003, 779003)
In the low temperature region, it seems that the resistivity has the similarvalues when superconductivity sets in disregarding the different Tc values,which indicates a novel mechanism of the superconductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[222.0, 300, 'K', 4],[38.0, 80, 'K', 1],[35.0, 100, 'K', 1]

ZnO
###Hydrogen-induced ferromagnetism in ZnO single crystals investigated by Magnetotransport|M. Khalid,P. Esquinazi###
(779138, 779139)
Hydrogen-induced ferromagnetism in ZnO single crystals investigated by Magnetotransport.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 20, 'nm', 2],[74.0, 10, 'K', 2],[77.0, 300, 'K', 2],[96.0, 300, 'K', 3],[110.0, 4, 'emu', 3],[207.0, 250, 'K', 6],[216.0, 10, 'K', 6]

ZnO
###Hydrogen-induced ferromagnetism in ZnO single crystals investigated by Magnetotransport|M. Khalid,P. Esquinazi###
(779177, 779178)
 We investigated the electrical and magnetic properties of low-energyhydrogen-implanted ZnO single crystals with hydrogen concentrations up to 3at.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 20, 'nm', 1],[35.0, 10, 'K', 1],[38.0, 300, 'K', 1],[57.0, 300, 'K', 2],[71.0, 4, 'emu', 2],[168.0, 250, 'K', 5],[177.0, 10, 'K', 5]

H
###Hydrogen-induced ferromagnetism in ZnO single crystals investigated by Magnetotransport|M. Khalid,P. Esquinazi###
(779295, 779295)
 All the H-treated ZnO crystals exhibited a negativemagnetoresistance up to the room temperature.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 20, 'nm', 3],[82.0, 10, 'K', 3],[79.0, 300, 'K', 3],[60.0, 300, 'K', 2],[46.0, 4, 'emu', 2],[51.0, 250, 'K', 1],[60.0, 10, 'K', 1]

ZnO
###Hydrogen-induced ferromagnetism in ZnO single crystals investigated by Magnetotransport|M. Khalid,P. Esquinazi###
(779299, 779300)
 All the H-treated ZnO crystals exhibited a negativemagnetoresistance up to the room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 20, 'nm', 3],[86.0, 10, 'K', 3],[83.0, 300, 'K', 3],[64.0, 300, 'K', 2],[50.0, 4, 'emu', 2],[46.0, 250, 'K', 1],[55.0, 10, 'K', 1]

K
###Hydrogen-induced ferromagnetism in ZnO single crystals investigated by Magnetotransport|M. Khalid,P. Esquinazi###
(779387, 779387)
 The relative magnitude of theanisotropic magnetoresistance reaches 0.4 % at 250 K and 2 % at 10 K,exhibiting an anomalous, non-monotonous behavior and a change of sign below 100K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 20, 'nm', 4],[174.0, 10, 'K', 4],[171.0, 300, 'K', 4],[152.0, 300, 'K', 3],[138.0, 4, 'emu', 3],[41.0, 250, 'K', 0],[32.0, 10, 'K', 0]

ZnO
###Hydrogen-induced ferromagnetism in ZnO single crystals investigated by Magnetotransport|M. Khalid,P. Esquinazi###
(779431, 779432)
 All the experimental data indicate that hydrogen atoms alone in a fewpercent range trigger a magnetic order in a ZnO crystalline state.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[225.0, 20, 'nm', 5],[218.0, 10, 'K', 5],[215.0, 300, 'K', 5],[196.0, 300, 'K', 4],[182.0, 4, 'emu', 4],[85.0, 250, 'K', 1],[76.0, 10, 'K', 1]

ZnO
###Hydrogen-induced ferromagnetism in ZnO single crystals investigated by Magnetotransport|M. Khalid,P. Esquinazi###
(779475, 779476)
 Hydrogenimplantation turns out to be a simpler and effective method to generate amagnetic order in ZnO, which provides interesting possibilities for futureapplications due to the strong reduction of the electrical resistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[269.0, 20, 'nm', 6],[262.0, 10, 'K', 6],[259.0, 300, 'K', 6],[240.0, 300, 'K', 5],[226.0, 4, 'emu', 5],[129.0, 250, 'K', 2],[120.0, 10, 'K', 2]

Ni80
###Emergence of the stripe-domain phase in patterned Permalloy films|S. Voltan,C. Cirillo,H. J. Snijders,K. Lahabi,A. Garcia-Santiago,J. M. Hernandez,C. Attanasio,J. Aarts###
(779563, 779564)
 The occurrence of stripe domains in ferromagnetic Permalloy(PyFe20Ni80) is a well known phenomenon which has been extensivelyobserved and characterized.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(H)
###Emergence of the stripe-domain phase in patterned Permalloy films|S. Voltan,C. Cirillo,H. J. Snijders,K. Lahabi,A. Garcia-Santiago,J. M. Hernandez,C. Attanasio,J. Aarts###
(779697, 779699)
 So far, d<missing VAR>cr has usually been presented as the boundarybetween the homogeneous (H) and stripe-domains (SD) regime, respectively belowand above d<missing VAR>cr.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Emergence of the stripe-domain phase in patterned Permalloy films|S. Voltan,C. Cirillo,H. J. Snijders,K. Lahabi,A. Garcia-Santiago,J. M. Hernandez,C. Attanasio,J. Aarts###
(779708, 779708)
 So far, d<missing VAR>cr has usually been presented as the boundarybetween the homogeneous (H) and stripe-domains (SD) regime, respectively belowand above d<missing VAR>cr.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Emergence of the stripe-domain phase in patterned Permalloy films|S. Voltan,C. Cirillo,H. J. Snijders,K. Lahabi,A. Garcia-Santiago,J. M. Hernandez,C. Attanasio,J. Aarts###
(779728, 779728)
 In this work we study the transition from the H to the SD<missing VAR>regime in thin films and microstructured bridges of Py with differentthicknesses.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Emergence of the stripe-domain phase in patterned Permalloy films|S. Voltan,C. Cirillo,H. J. Snijders,K. Lahabi,A. Garcia-Santiago,J. M. Hernandez,C. Attanasio,J. Aarts###
(779746, 779746)
 In this work we study the transition from the H to the SD<missing VAR>regime in thin films and microstructured bridges of Py with differentthicknesses.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Emergence of the stripe-domain phase in patterned Permalloy films|S. Voltan,C. Cirillo,H. J. Snijders,K. Lahabi,A. Garcia-Santiago,J. M. Hernandez,C. Attanasio,J. Aarts###
(779752, 779752)
 In this work we study the transition from the H to the SD<missing VAR>regime in thin films and microstructured bridges of Py with differentthicknesses.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Emergence of the stripe-domain phase in patterned Permalloy films|S. Voltan,C. Cirillo,H. J. Snijders,K. Lahabi,A. Garcia-Santiago,J. M. Hernandez,C. Attanasio,J. Aarts###
(779909, 779909)
 The transition from the ESD to the SD<missing VAR> regime isaccompanied by a sharp increase of the magnetoresistance ratio at the thicknesswhere stripes appear in MFM.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co/Cu
###Magnetoresistance and surface roughness study of the initial growth of electrodeposited Co/Cu multilayers|B. G. Tóth,L. Péter,I. Bakonyi###
(779985, 779987)
Magnetoresistance and surface roughness study of the initial growth of electrodeposited Co/Cu multilayers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

F
###Magnetoresistance and surface roughness study of the initial growth of electrodeposited Co/Cu multilayers|B. G. Tóth,L. Péter,I. Bakonyi###
(780026, 780026)
 The giant magnetoresistance (GMR) effect has been widely investigated onelectrodeposited ferromagnetic/non-magnetic (FM<missing VAR>/NM) multilayers generallycontaining a large number of bilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Magnetoresistance and surface roughness study of the initial growth of electrodeposited Co/Cu multilayers|B. G. Tóth,L. Péter,I. Bakonyi###
(780029, 780029)
 The giant magnetoresistance (GMR) effect has been widely investigated onelectrodeposited ferromagnetic/non-magnetic (FM<missing VAR>/NM) multilayers generallycontaining a large number of bilayers.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magnetoresistance and surface roughness study of the initial growth of electrodeposited Co/Cu multilayers|B. G. Tóth,L. Péter,I. Bakonyi###
(780051, 780051)
 In most applications of the GMR effect,layered structures consisting of a relatively small number of consecutive FM<missing VAR>and NM<missing VAR> layers are used.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Magnetoresistance and surface roughness study of the initial growth of electrodeposited Co/Cu multilayers|B. G. Tóth,L. Péter,I. Bakonyi###
(780089, 780089)
 In most applications of the GMR effect,layered structures consisting of a relatively small number of consecutive FM<missing VAR>and NM<missing VAR> layers are used.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Magnetoresistance and surface roughness study of the initial growth of electrodeposited Co/Cu multilayers|B. G. Tóth,L. Péter,I. Bakonyi###
(780095, 780095)
 In most applications of the GMR effect,layered structures consisting of a relatively small number of consecutive FM<missing VAR>and NM<missing VAR> layers are used.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magnetoresistance and surface roughness study of the initial growth of electrodeposited Co/Cu multilayers|B. G. Tóth,L. Péter,I. Bakonyi###
(780147, 780147)
 In thepresent work we have extended our previous studies on ED GMR multilayers tolayered structures with a total thickness ranging from a few nanometers up to70 nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co/Cu
###Magnetoresistance and surface roughness study of the initial growth of electrodeposited Co/Cu multilayers|B. G. Tóth,L. Péter,I. Bakonyi###
(780244, 780246)
 The evolution of the surface roughness and electrical transportproperties of such ultrathin ED Co/Cu layered structures was investigated.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Co
###Magnetoresistance and surface roughness study of the initial growth of electrodeposited Co/Cu multilayers|B. G. Tóth,L. Péter,I. Bakonyi###
(780272, 780272)
Various layer combinations were produced including both Co and Cu either asstarting or top layers in order (i) to see differences in the nucleation of thefirst layer and (ii) to trace out the effect of the so called exchangereaction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Magnetoresistance and surface roughness study of the initial growth of electrodeposited Co/Cu multilayers|B. G. Tóth,L. Péter,I. Bakonyi###
(780276, 780276)
Various layer combinations were produced including both Co and Cu either asstarting or top layers in order (i) to see differences in the nucleation of thefirst layer and (ii) to trace out the effect of the so called exchangereaction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(H)
###Magnetoresistance and surface roughness study of the initial growth of electrodeposited Co/Cu multilayers|B. G. Tóth,L. Péter,I. Bakonyi###
(780378, 780380)
 Special attention was paid to measure the field dependence of themagnetoresistance, MR(H) in order to derive information for the appearance ofsuperparamagnetic regions in the magnetic layers.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YbMnBi2
###Unusual interlayer quantum transport behavior caused by the zeroth Landau level in YbMnBi2|J. Y. Liu,J. Hu,D. Graf,T. Zou,M. Zhu,Y. Shi,S. Che,S. M. A. Radmanesh,C. N. Lau,L. Spinu,H. B. Cao,X. Ke,Z. Q. Mao###
(780489, 780492)
Unusual interlayer quantum transport behavior caused by the zeroth Landau level in YbMnBi2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Unusual interlayer quantum transport behavior caused by the zeroth Landau level in YbMnBi2|J. Y. Liu,J. Hu,D. Graf,T. Zou,M. Zhu,Y. Shi,S. Che,S. M. A. Radmanesh,C. N. Lau,L. Spinu,H. B. Cao,X. Ke,Z. Q. Mao###
(780641, 780641)
 Suchfield-independent zeroth LL, which distinguishes relativistic fermions fromconventional electron systems, is hardly probed in transport measurements sincethe Fermi energy (E<missing VAR>F) is usually not right at the band crossing points in mosttopological materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YbMnBi2
###Unusual interlayer quantum transport behavior caused by the zeroth Landau level in YbMnBi2|J. Y. Liu,J. Hu,D. Graf,T. Zou,M. Zhu,Y. Shi,S. Che,S. M. A. Radmanesh,C. N. Lau,L. Spinu,H. B. Cao,X. Ke,Z. Q. Mao###
(780715, 780718)
 Here we report the observation of exotic quantumtransport behavior resulting from the zeroth LL in a multiband topologicalsemimetal YbMnBi2 which possesses linear band crossings both at and away fromthe Fermi level (FL).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Unusual interlayer quantum transport behavior caused by the zeroth Landau level in YbMnBi2|J. Y. Liu,J. Hu,D. Graf,T. Zou,M. Zhu,Y. Shi,S. Che,S. M. A. Radmanesh,C. N. Lau,L. Spinu,H. B. Cao,X. Ke,Z. Q. Mao###
(780748, 780748)
 Here we report the observation of exotic quantumtransport behavior resulting from the zeroth LL in a multiband topologicalsemimetal YbMnBi2 which possesses linear band crossings both at and away fromthe Fermi level (FL).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Unusual interlayer quantum transport behavior caused by the zeroth Landau level in YbMnBi2|J. Y. Liu,J. Hu,D. Graf,T. Zou,M. Zhu,Y. Shi,S. Che,S. M. A. Radmanesh,C. N. Lau,L. Spinu,H. B. Cao,X. Ke,Z. Q. Mao###
(780784, 780784)
 We show that the Dirac bands with the crossing pointsbeing above or below the FL<missing VAR> leads to Shubnikov de-Haas oscillations in thein-plane magnetoresistance, whereas the Dirac bands with the crossing pointsbeing at the FL<missing VAR> results in unusual angular dependences of the out-of-planemagnetoresistance and in-plane Hall resistivity due to the dependence of thezeroth LLs degeneracy on field orientation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Unusual interlayer quantum transport behavior caused by the zeroth Landau level in YbMnBi2|J. Y. Liu,J. Hu,D. Graf,T. Zou,M. Zhu,Y. Shi,S. Che,S. M. A. Radmanesh,C. N. Lau,L. Spinu,H. B. Cao,X. Ke,Z. Q. Mao###
(780834, 780834)
 We show that the Dirac bands with the crossing pointsbeing above or below the FL<missing VAR> leads to Shubnikov de-Haas oscillations in thein-plane magnetoresistance, whereas the Dirac bands with the crossing pointsbeing at the FL<missing VAR> results in unusual angular dependences of the out-of-planemagnetoresistance and in-plane Hall resistivity due to the dependence of thezeroth LLs degeneracy on field orientation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Te3
###Extremely large non-saturating magnetoresistance and ultrahigh mobility due to topological surface states in metallic Bi2Te3 topological insulator|K. Shrestha,M. Chou,D. Graf,H. D. Yang,B. Lorenz,C. W. Chu###
(780975, 780978)
Extremely large non-saturating magnetoresistance and ultrahigh mobility due to topological surface states in metallic Bi2Te3 topological insulator.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Extremely large non-saturating magnetoresistance and ultrahigh mobility due to topological surface states in metallic Bi2Te3 topological insulator|K. Shrestha,M. Chou,D. Graf,H. D. Yang,B. Lorenz,C. W. Chu###
(780990, 780990)
 Weak antilocalization (WAL) effects in Bi2Te3 single crystals have beeninvestigated at high and low bulk charge carrier concentrations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Te3
###Extremely large non-saturating magnetoresistance and ultrahigh mobility due to topological surface states in metallic Bi2Te3 topological insulator|K. Shrestha,M. Chou,D. Graf,H. D. Yang,B. Lorenz,C. W. Chu###
(780999, 781002)
 Weak antilocalization (WAL) effects in Bi2Te3 single crystals have beeninvestigated at high and low bulk charge carrier concentrations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Extremely large non-saturating magnetoresistance and ultrahigh mobility due to topological surface states in metallic Bi2Te3 topological insulator|K. Shrestha,M. Chou,D. Graf,H. D. Yang,B. Lorenz,C. W. Chu###
(781032, 781032)
 At low chargecarrier density the WAL<missing VAR> curves scale with the normal component of the magneticfield, demonstrating the dominance of topological surface states inmagnetoconductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Extremely large non-saturating magnetoresistance and ultrahigh mobility due to topological surface states in metallic Bi2Te3 topological insulator|K. Shrestha,M. Chou,D. Graf,H. D. Yang,B. Lorenz,C. W. Chu###
(781045, 781045)
 At low chargecarrier density the WAL<missing VAR> curves scale with the normal component of the magneticfield, demonstrating the dominance of topological surface states inmagnetoconductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Extremely large non-saturating magnetoresistance and ultrahigh mobility due to topological surface states in metallic Bi2Te3 topological insulator|K. Shrestha,M. Chou,D. Graf,H. D. Yang,B. Lorenz,C. W. Chu###
(781091, 781091)
 At high charge carrier density the WAL<missing VAR> curves scale withneither the applied field nor its normal component, implying a mixture of bulkand surface conduction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Extremely large non-saturating magnetoresistance and ultrahigh mobility due to topological surface states in metallic Bi2Te3 topological insulator|K. Shrestha,M. Chou,D. Graf,H. D. Yang,B. Lorenz,C. W. Chu###
(781103, 781103)
 At high charge carrier density the WAL<missing VAR> curves scale withneither the applied field nor its normal component, implying a mixture of bulkand surface conduction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Extremely large non-saturating magnetoresistance and ultrahigh mobility due to topological surface states in metallic Bi2Te3 topological insulator|K. Shrestha,M. Chou,D. Graf,H. D. Yang,B. Lorenz,C. W. Chu###
(781149, 781149)
 WAL<missing VAR> due to topological surface states shows nodependence on the nature (electrons or holes) of the bulk charge carriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Extremely large non-saturating magnetoresistance and ultrahigh mobility due to topological surface states in metallic Bi2Te3 topological insulator|K. Shrestha,M. Chou,D. Graf,H. D. Yang,B. Lorenz,C. W. Chu###
(781263, 781263)
 The physical parameters characterizing the WAL<missing VAR>effects are calculated using the Hikami-Larkin-Nagaoka formula.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Extremely large non-saturating magnetoresistance and ultrahigh mobility due to topological surface states in metallic Bi2Te3 topological insulator|K. Shrestha,M. Chou,D. Graf,H. D. Yang,B. Lorenz,C. W. Chu###
(781287, 781287)
 At high chargecarrier concentrations, there is a greater number of conduction channels and adecrease in the phase coherence length compared to low charge carrierconcentrations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Strongly angle-dependent magnetoresistance in Weyl semimetals with long-range disorder|Jan Behrends,Jens H. Bardarson###
(781642, 781642)
 In particular, we ana-lytically show, and numerically confirm, that the internode scattering timedecreases exponentially with the angle between the magnetic field and the Weylnode separation in the large field limit, while it is insensitive to this angleat weak magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sb
###Electronic structure of RSb (R = Y, Ce, Gd, Dy, Ho, Tm, Lu) studied by angle-resolved photoemission spectroscopy|Yun Wu,Yongbin Lee,Tai Kong,Daixiang Mou,Rui Jiang,Lunan Huang,S. L. Bud'ko,P. C. Canfield,Adam Kaminski###
(781822, 781822)
Electronic structure of R<missing VAR>Sb (R<missing VAR>  Y, Ce, Gd, Dy, Ho, Tm, Lu) studied by angle-resolved photoemission spectroscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Y
###Electronic structure of RSb (R = Y, Ce, Gd, Dy, Ho, Tm, Lu) studied by angle-resolved photoemission spectroscopy|Yun Wu,Yongbin Lee,Tai Kong,Daixiang Mou,Rui Jiang,Lunan Huang,S. L. Bud'ko,P. C. Canfield,Adam Kaminski###
(781828, 781828)
Electronic structure of R<missing VAR>Sb (R<missing VAR>  Y, Ce, Gd, Dy, Ho, Tm, Lu) studied by angle-resolved photoemission spectroscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ce
###Electronic structure of RSb (R = Y, Ce, Gd, Dy, Ho, Tm, Lu) studied by angle-resolved photoemission spectroscopy|Yun Wu,Yongbin Lee,Tai Kong,Daixiang Mou,Rui Jiang,Lunan Huang,S. L. Bud'ko,P. C. Canfield,Adam Kaminski###
(781831, 781831)
Electronic structure of R<missing VAR>Sb (R<missing VAR>  Y, Ce, Gd, Dy, Ho, Tm, Lu) studied by angle-resolved photoemission spectroscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Gd
###Electronic structure of RSb (R = Y, Ce, Gd, Dy, Ho, Tm, Lu) studied by angle-resolved photoemission spectroscopy|Yun Wu,Yongbin Lee,Tai Kong,Daixiang Mou,Rui Jiang,Lunan Huang,S. L. Bud'ko,P. C. Canfield,Adam Kaminski###
(781834, 781834)
Electronic structure of R<missing VAR>Sb (R<missing VAR>  Y, Ce, Gd, Dy, Ho, Tm, Lu) studied by angle-resolved photoemission spectroscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Dy
###Electronic structure of RSb (R = Y, Ce, Gd, Dy, Ho, Tm, Lu) studied by angle-resolved photoemission spectroscopy|Yun Wu,Yongbin Lee,Tai Kong,Daixiang Mou,Rui Jiang,Lunan Huang,S. L. Bud'ko,P. C. Canfield,Adam Kaminski###
(781837, 781837)
Electronic structure of R<missing VAR>Sb (R<missing VAR>  Y, Ce, Gd, Dy, Ho, Tm, Lu) studied by angle-resolved photoemission spectroscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ho
###Electronic structure of RSb (R = Y, Ce, Gd, Dy, Ho, Tm, Lu) studied by angle-resolved photoemission spectroscopy|Yun Wu,Yongbin Lee,Tai Kong,Daixiang Mou,Rui Jiang,Lunan Huang,S. L. Bud'ko,P. C. Canfield,Adam Kaminski###
(781840, 781840)
Electronic structure of R<missing VAR>Sb (R<missing VAR>  Y, Ce, Gd, Dy, Ho, Tm, Lu) studied by angle-resolved photoemission spectroscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tm
###Electronic structure of RSb (R = Y, Ce, Gd, Dy, Ho, Tm, Lu) studied by angle-resolved photoemission spectroscopy|Yun Wu,Yongbin Lee,Tai Kong,Daixiang Mou,Rui Jiang,Lunan Huang,S. L. Bud'ko,P. C. Canfield,Adam Kaminski###
(781843, 781843)
Electronic structure of R<missing VAR>Sb (R<missing VAR>  Y, Ce, Gd, Dy, Ho, Tm, Lu) studied by angle-resolved photoemission spectroscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Lu
###Electronic structure of RSb (R = Y, Ce, Gd, Dy, Ho, Tm, Lu) studied by angle-resolved photoemission spectroscopy|Yun Wu,Yongbin Lee,Tai Kong,Daixiang Mou,Rui Jiang,Lunan Huang,S. L. Bud'ko,P. C. Canfield,Adam Kaminski###
(781846, 781846)
Electronic structure of R<missing VAR>Sb (R<missing VAR>  Y, Ce, Gd, Dy, Ho, Tm, Lu) studied by angle-resolved photoemission spectroscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Electronic structure of RSb (R = Y, Ce, Gd, Dy, Ho, Tm, Lu) studied by angle-resolved photoemission spectroscopy|Yun Wu,Yongbin Lee,Tai Kong,Daixiang Mou,Rui Jiang,Lunan Huang,S. L. Bud'ko,P. C. Canfield,Adam Kaminski###
(781883, 781883)
 We use high resolution angle-resolved photoemission spectroscopy (ARPES) andelectronic structure calculations to study the electronic properties ofrare-earth monoantimonides R<missing VAR>Sb (R<missing VAR>  Y, Ce, Gd, Dy, Ho, Tm, Lu).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sb
###Electronic structure of RSb (R = Y, Ce, Gd, Dy, Ho, Tm, Lu) studied by angle-resolved photoemission spectroscopy|Yun Wu,Yongbin Lee,Tai Kong,Daixiang Mou,Rui Jiang,Lunan Huang,S. L. Bud'ko,P. C. Canfield,Adam Kaminski###
(781915, 781915)
 We use high resolution angle-resolved photoemission spectroscopy (ARPES) andelectronic structure calculations to study the electronic properties ofrare-earth monoantimonides R<missing VAR>Sb (R<missing VAR>  Y, Ce, Gd, Dy, Ho, Tm, Lu).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Y
###Electronic structure of RSb (R = Y, Ce, Gd, Dy, Ho, Tm, Lu) studied by angle-resolved photoemission spectroscopy|Yun Wu,Yongbin Lee,Tai Kong,Daixiang Mou,Rui Jiang,Lunan Huang,S. L. Bud'ko,P. C. Canfield,Adam Kaminski###
(781921, 781921)
 We use high resolution angle-resolved photoemission spectroscopy (ARPES) andelectronic structure calculations to study the electronic properties ofrare-earth monoantimonides R<missing VAR>Sb (R<missing VAR>  Y, Ce, Gd, Dy, Ho, Tm, Lu).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ce
###Electronic structure of RSb (R = Y, Ce, Gd, Dy, Ho, Tm, Lu) studied by angle-resolved photoemission spectroscopy|Yun Wu,Yongbin Lee,Tai Kong,Daixiang Mou,Rui Jiang,Lunan Huang,S. L. Bud'ko,P. C. Canfield,Adam Kaminski###
(781924, 781924)
 We use high resolution angle-resolved photoemission spectroscopy (ARPES) andelectronic structure calculations to study the electronic properties ofrare-earth monoantimonides R<missing VAR>Sb (R<missing VAR>  Y, Ce, Gd, Dy, Ho, Tm, Lu).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Gd
###Electronic structure of RSb (R = Y, Ce, Gd, Dy, Ho, Tm, Lu) studied by angle-resolved photoemission spectroscopy|Yun Wu,Yongbin Lee,Tai Kong,Daixiang Mou,Rui Jiang,Lunan Huang,S. L. Bud'ko,P. C. Canfield,Adam Kaminski###
(781927, 781927)
 We use high resolution angle-resolved photoemission spectroscopy (ARPES) andelectronic structure calculations to study the electronic properties ofrare-earth monoantimonides R<missing VAR>Sb (R<missing VAR>  Y, Ce, Gd, Dy, Ho, Tm, Lu).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Dy
###Electronic structure of RSb (R = Y, Ce, Gd, Dy, Ho, Tm, Lu) studied by angle-resolved photoemission spectroscopy|Yun Wu,Yongbin Lee,Tai Kong,Daixiang Mou,Rui Jiang,Lunan Huang,S. L. Bud'ko,P. C. Canfield,Adam Kaminski###
(781930, 781930)
 We use high resolution angle-resolved photoemission spectroscopy (ARPES) andelectronic structure calculations to study the electronic properties ofrare-earth monoantimonides R<missing VAR>Sb (R<missing VAR>  Y, Ce, Gd, Dy, Ho, Tm, Lu).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ho
###Electronic structure of RSb (R = Y, Ce, Gd, Dy, Ho, Tm, Lu) studied by angle-resolved photoemission spectroscopy|Yun Wu,Yongbin Lee,Tai Kong,Daixiang Mou,Rui Jiang,Lunan Huang,S. L. Bud'ko,P. C. Canfield,Adam Kaminski###
(781933, 781933)
 We use high resolution angle-resolved photoemission spectroscopy (ARPES) andelectronic structure calculations to study the electronic properties ofrare-earth monoantimonides R<missing VAR>Sb (R<missing VAR>  Y, Ce, Gd, Dy, Ho, Tm, Lu).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tm
###Electronic structure of RSb (R = Y, Ce, Gd, Dy, Ho, Tm, Lu) studied by angle-resolved photoemission spectroscopy|Yun Wu,Yongbin Lee,Tai Kong,Daixiang Mou,Rui Jiang,Lunan Huang,S. L. Bud'ko,P. C. Canfield,Adam Kaminski###
(781936, 781936)
 We use high resolution angle-resolved photoemission spectroscopy (ARPES) andelectronic structure calculations to study the electronic properties ofrare-earth monoantimonides R<missing VAR>Sb (R<missing VAR>  Y, Ce, Gd, Dy, Ho, Tm, Lu).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Lu
###Electronic structure of RSb (R = Y, Ce, Gd, Dy, Ho, Tm, Lu) studied by angle-resolved photoemission spectroscopy|Yun Wu,Yongbin Lee,Tai Kong,Daixiang Mou,Rui Jiang,Lunan Huang,S. L. Bud'ko,P. C. Canfield,Adam Kaminski###
(781939, 781939)
 We use high resolution angle-resolved photoemission spectroscopy (ARPES) andelectronic structure calculations to study the electronic properties ofrare-earth monoantimonides R<missing VAR>Sb (R<missing VAR>  Y, Ce, Gd, Dy, Ho, Tm, Lu).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(FS)
###Electronic structure of RSb (R = Y, Ce, Gd, Dy, Ho, Tm, Lu) studied by angle-resolved photoemission spectroscopy|Yun Wu,Yongbin Lee,Tai Kong,Daixiang Mou,Rui Jiang,Lunan Huang,S. L. Bud'ko,P. C. Canfield,Adam Kaminski###
(781954, 781957)
 Theexperimentally measured Fermi surface (FS) of R<missing VAR>Sb consists of at least twoconcentric hole pockets at the Gamma point and two intersecting electronpockets at the X<missing VAR> point.
Featurization successful!
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sb
###Electronic structure of RSb (R = Y, Ce, Gd, Dy, Ho, Tm, Lu) studied by angle-resolved photoemission spectroscopy|Yun Wu,Yongbin Lee,Tai Kong,Daixiang Mou,Rui Jiang,Lunan Huang,S. L. Bud'ko,P. C. Canfield,Adam Kaminski###
(781962, 781962)
 Theexperimentally measured Fermi surface (FS) of R<missing VAR>Sb consists of at least twoconcentric hole pockets at the Gamma point and two intersecting electronpockets at the X<missing VAR> point.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Electronic structure of RSb (R = Y, Ce, Gd, Dy, Ho, Tm, Lu) studied by angle-resolved photoemission spectroscopy|Yun Wu,Yongbin Lee,Tai Kong,Daixiang Mou,Rui Jiang,Lunan Huang,S. L. Bud'ko,P. C. Canfield,Adam Kaminski###
(782056, 782056)
 Detailed photon energy dependence measurements usingboth synchrotron and laser ARPES systems indicate that there is at least oneFermi surface sheet with strong three-dimensionality centered at the Gammapoint.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CeSb
###Electronic structure of RSb (R = Y, Ce, Gd, Dy, Ho, Tm, Lu) studied by angle-resolved photoemission spectroscopy|Yun Wu,Yongbin Lee,Tai Kong,Daixiang Mou,Rui Jiang,Lunan Huang,S. L. Bud'ko,P. C. Canfield,Adam Kaminski###
(782143, 782144)
 Due to the lanthanide contraction, the unit cell of differentrare-earth monoantimonides shrinks when changing rare-earth ion from CeSb toLuSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LuSb
###Electronic structure of RSb (R = Y, Ce, Gd, Dy, Ho, Tm, Lu) studied by angle-resolved photoemission spectroscopy|Yun Wu,Yongbin Lee,Tai Kong,Daixiang Mou,Rui Jiang,Lunan Huang,S. L. Bud'ko,P. C. Canfield,Adam Kaminski###
(782149, 782150)
 Due to the lanthanide contraction, the unit cell of differentrare-earth monoantimonides shrinks when changing rare-earth ion from CeSb toLuSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Electronic structure of RSb (R = Y, Ce, Gd, Dy, Ho, Tm, Lu) studied by angle-resolved photoemission spectroscopy|Yun Wu,Yongbin Lee,Tai Kong,Daixiang Mou,Rui Jiang,Lunan Huang,S. L. Bud'ko,P. C. Canfield,Adam Kaminski###
(782193, 782193)
 This results in the differences in the chemical potentials in thesecompounds, which is demonstrated by both ARPES measurements and electronicstructure calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CeSb
###Electronic structure of RSb (R = Y, Ce, Gd, Dy, Ho, Tm, Lu) studied by angle-resolved photoemission spectroscopy|Yun Wu,Yongbin Lee,Tai Kong,Daixiang Mou,Rui Jiang,Lunan Huang,S. L. Bud'ko,P. C. Canfield,Adam Kaminski###
(782212, 782213)
 Interestingly, in CeSb, the intersecting electronpockets at the X<missing VAR> point seem to be touching the valence bands, forming afour-fold degenerate Dirac-like feature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaBi
###Electronic structure of RSb (R = Y, Ce, Gd, Dy, Ho, Tm, Lu) studied by angle-resolved photoemission spectroscopy|Yun Wu,Yongbin Lee,Tai Kong,Daixiang Mou,Rui Jiang,Lunan Huang,S. L. Bud'ko,P. C. Canfield,Adam Kaminski###
(782332, 782333)
 Furthermore, similar to the previously reported resultsof LaBi, a Dirac-like structure was observed at the Gamma point in YSb,CeSb, and GdSb, compounds showing relatively high magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YSb
###Electronic structure of RSb (R = Y, Ce, Gd, Dy, Ho, Tm, Lu) studied by angle-resolved photoemission spectroscopy|Yun Wu,Yongbin Lee,Tai Kong,Daixiang Mou,Rui Jiang,Lunan Huang,S. L. Bud'ko,P. C. Canfield,Adam Kaminski###
(782358, 782359)
 Furthermore, similar to the previously reported resultsof LaBi, a Dirac-like structure was observed at the Gamma point in YSb,CeSb, and GdSb, compounds showing relatively high magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CeSb
###Electronic structure of RSb (R = Y, Ce, Gd, Dy, Ho, Tm, Lu) studied by angle-resolved photoemission spectroscopy|Yun Wu,Yongbin Lee,Tai Kong,Daixiang Mou,Rui Jiang,Lunan Huang,S. L. Bud'ko,P. C. Canfield,Adam Kaminski###
(782363, 782364)
 Furthermore, similar to the previously reported resultsof LaBi, a Dirac-like structure was observed at the Gamma point in YSb,CeSb, and GdSb, compounds showing relatively high magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GdSb
###Electronic structure of RSb (R = Y, Ce, Gd, Dy, Ho, Tm, Lu) studied by angle-resolved photoemission spectroscopy|Yun Wu,Yongbin Lee,Tai Kong,Daixiang Mou,Rui Jiang,Lunan Huang,S. L. Bud'ko,P. C. Canfield,Adam Kaminski###
(782369, 782370)
 Furthermore, similar to the previously reported resultsof LaBi, a Dirac-like structure was observed at the Gamma point in YSb,CeSb, and GdSb, compounds showing relatively high magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiCo2O4
###Absence of Metallic Behavior in Epitaxial NiCo2O4 Thin Films: Role of Microstructural Disorder|Congmian Zhen,XiaoZhe Zhang,Wengang Wei,Wenzhe Guo,Ankit Pant,Xiaoshan Xu,Jian Shen,Li Ma,Denglu Hou###
(782435, 782439)
Absence of Metallic Behavior in Epitaxial NiCo2O4 Thin Films Role of Microstructural Disorder.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 1, 'mohm', 1]

NiCo2O4
###Absence of Metallic Behavior in Epitaxial NiCo2O4 Thin Films: Role of Microstructural Disorder|Congmian Zhen,XiaoZhe Zhang,Wengang Wei,Wenzhe Guo,Ankit Pant,Xiaoshan Xu,Jian Shen,Li Ma,Denglu Hou###
(782496, 782500)
 Despite the low resistivity ( 1 mohm cm), the metallic electrical transporthas not been commonly observed in the inverse spinel NiCo2O4, except in certainepitaxial thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 1, 'mohm', 0]

NiCo2O4
###Absence of Metallic Behavior in Epitaxial NiCo2O4 Thin Films: Role of Microstructural Disorder|Congmian Zhen,XiaoZhe Zhang,Wengang Wei,Wenzhe Guo,Ankit Pant,Xiaoshan Xu,Jian Shen,Li Ma,Denglu Hou###
(782556, 782560)
 Previous studies have stressed the effect of valencemixing and degree of spinel inversion on the electric conduction of NiCo2O4films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 1, 'mohm', 1]

In
###Absence of Metallic Behavior in Epitaxial NiCo2O4 Thin Films: Role of Microstructural Disorder|Congmian Zhen,XiaoZhe Zhang,Wengang Wei,Wenzhe Guo,Ankit Pant,Xiaoshan Xu,Jian Shen,Li Ma,Denglu Hou###
(782566, 782566)
 In this work, we have studied the effect of microstructure by comparingthe NiCo2O4 epitaxial films grown on MgAl2O4 (111) and on Al2O3 (0001)substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 1, 'mohm', 2]

NiCo2O4
###Absence of Metallic Behavior in Epitaxial NiCo2O4 Thin Films: Role of Microstructural Disorder|Congmian Zhen,XiaoZhe Zhang,Wengang Wei,Wenzhe Guo,Ankit Pant,Xiaoshan Xu,Jian Shen,Li Ma,Denglu Hou###
(782594, 782598)
 In this work, we have studied the effect of microstructure by comparingthe NiCo2O4 epitaxial films grown on MgAl2O4 (111) and on Al2O3 (0001)substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 1, 'mohm', 2]

MgAl2O4
###Absence of Metallic Behavior in Epitaxial NiCo2O4 Thin Films: Role of Microstructural Disorder|Congmian Zhen,XiaoZhe Zhang,Wengang Wei,Wenzhe Guo,Ankit Pant,Xiaoshan Xu,Jian Shen,Li Ma,Denglu Hou###
(782608, 782612)
 In this work, we have studied the effect of microstructure by comparingthe NiCo2O4 epitaxial films grown on MgAl2O4 (111) and on Al2O3 (0001)substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0.14285714285714285,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 1, 'mohm', 2]

Al2O3
###Absence of Metallic Behavior in Epitaxial NiCo2O4 Thin Films: Role of Microstructural Disorder|Congmian Zhen,XiaoZhe Zhang,Wengang Wei,Wenzhe Guo,Ankit Pant,Xiaoshan Xu,Jian Shen,Li Ma,Denglu Hou###
(782622, 782625)
 In this work, we have studied the effect of microstructure by comparingthe NiCo2O4 epitaxial films grown on MgAl2O4 (111) and on Al2O3 (0001)substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[159.0, 1, 'mohm', 2]

NiCo2O4/MgAl2O4
###Absence of Metallic Behavior in Epitaxial NiCo2O4 Thin Films: Role of Microstructural Disorder|Congmian Zhen,XiaoZhe Zhang,Wengang Wei,Wenzhe Guo,Ankit Pant,Xiaoshan Xu,Jian Shen,Li Ma,Denglu Hou###
(782662, 782672)
 Although the optimal growth condition and the magnetic propertiesare similar for the NiCo2O4/MgAl2O4 and the NiCo2O4/Al2O3, they show metallicand semiconducting electrical transport respectively.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[199.0, 1, 'mohm', 3]

NiCo2O4/Al2O3
###Absence of Metallic Behavior in Epitaxial NiCo2O4 Thin Films: Role of Microstructural Disorder|Congmian Zhen,XiaoZhe Zhang,Wengang Wei,Wenzhe Guo,Ankit Pant,Xiaoshan Xu,Jian Shen,Li Ma,Denglu Hou###
(782678, 782687)
 Although the optimal growth condition and the magnetic propertiesare similar for the NiCo2O4/MgAl2O4 and the NiCo2O4/Al2O3, they show metallicand semiconducting electrical transport respectively.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[215.0, 1, 'mohm', 3]

NiCo2O4/Al2O3
###Absence of Metallic Behavior in Epitaxial NiCo2O4 Thin Films: Role of Microstructural Disorder|Congmian Zhen,XiaoZhe Zhang,Wengang Wei,Wenzhe Guo,Ankit Pant,Xiaoshan Xu,Jian Shen,Li Ma,Denglu Hou###
(782728, 782737)
 Despite similartemperature and field dependence of magnetization, the NiCo2O4/Al2O3 show muchlarger magnetoresistance at low temperature.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[265.0, 1, 'mohm', 4]

NiCo2O4/Al2O3
###Absence of Metallic Behavior in Epitaxial NiCo2O4 Thin Films: Role of Microstructural Disorder|Congmian Zhen,XiaoZhe Zhang,Wengang Wei,Wenzhe Guo,Ankit Pant,Xiaoshan Xu,Jian Shen,Li Ma,Denglu Hou###
(782770, 782779)
 Post-growth annealing decreasesthe resistivity of NiCo2O4/Al2O3, but the annealed films are stillsemiconducting.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[307.0, 1, 'mohm', 5]

NiCo2O4
###Absence of Metallic Behavior in Epitaxial NiCo2O4 Thin Films: Role of Microstructural Disorder|Congmian Zhen,XiaoZhe Zhang,Wengang Wei,Wenzhe Guo,Ankit Pant,Xiaoshan Xu,Jian Shen,Li Ma,Denglu Hou###
(782845, 782849)
 The correlation between the structural correlation length andthe resistivity suggests that the microstructural disorder, generated by thedramatic mismatch between the NiCo2O4 and Al2O3 crystal structures, may be theorigin of the absence of the metallic electrical transport in NiCo2O4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[382.0, 1, 'mohm', 6]

Al2O3
###Absence of Metallic Behavior in Epitaxial NiCo2O4 Thin Films: Role of Microstructural Disorder|Congmian Zhen,XiaoZhe Zhang,Wengang Wei,Wenzhe Guo,Ankit Pant,Xiaoshan Xu,Jian Shen,Li Ma,Denglu Hou###
(782853, 782856)
 The correlation between the structural correlation length andthe resistivity suggests that the microstructural disorder, generated by thedramatic mismatch between the NiCo2O4 and Al2O3 crystal structures, may be theorigin of the absence of the metallic electrical transport in NiCo2O4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[390.0, 1, 'mohm', 6]

NiCo2O4
###Absence of Metallic Behavior in Epitaxial NiCo2O4 Thin Films: Role of Microstructural Disorder|Congmian Zhen,XiaoZhe Zhang,Wengang Wei,Wenzhe Guo,Ankit Pant,Xiaoshan Xu,Jian Shen,Li Ma,Denglu Hou###
(782890, 782894)
 The correlation between the structural correlation length andthe resistivity suggests that the microstructural disorder, generated by thedramatic mismatch between the NiCo2O4 and Al2O3 crystal structures, may be theorigin of the absence of the metallic electrical transport in NiCo2O4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[427.0, 1, 'mohm', 6]

NiCo2O4
###Absence of Metallic Behavior in Epitaxial NiCo2O4 Thin Films: Role of Microstructural Disorder|Congmian Zhen,XiaoZhe Zhang,Wengang Wei,Wenzhe Guo,Ankit Pant,Xiaoshan Xu,Jian Shen,Li Ma,Denglu Hou###
(782929, 782933)
 Theseresults reveal microstructural disorder as another key factor in controllingthe electrical transport of NiCo2O4, with potentially large magnetoresistancefor spintronics application.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[466.0, 1, 'mohm', 7]

In
###Spin-transfer Antiferromagnetic Resonance|Øyvind Johansen,Hans Skarsvåg,Arne Brataas###
(783199, 783199)
 In bilayers, the two contributions compensateeach other and cannot easily be distinguished.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnF2Pt
###Spin-transfer Antiferromagnetic Resonance|Øyvind Johansen,Hans Skarsvåg,Arne Brataas###
(783241, 783244)
 We present numerical results fora MnF2Pt bilayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe3GeTe2
###Tunneling spin valves based on Fe$_3$GeTe$_2$/hBN/Fe$_3$GeTe$_2$ van der Waals heterostructures|Zhe Wang,Deepak Sapkota,Takashi Taniguchi,Kenji Watanabe,David Mandrus,Alberto F. Morpurgo###
(783366, 783370)
Tunneling spin valves based on Fe3GeTe2/h<missing VAR>BN/Fe3GeTe2 van der Waals heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[323.0, 160, '%', 5],[361.0, 0.66, ',', 5],[368.0, 83, '%', 5],[373.0, 17, '%', 5]

BN/Fe3GeTe2
###Tunneling spin valves based on Fe$_3$GeTe$_2$/hBN/Fe$_3$GeTe$_2$ van der Waals heterostructures|Zhe Wang,Deepak Sapkota,Takashi Taniguchi,Kenji Watanabe,David Mandrus,Alberto F. Morpurgo###
(783373, 783380)
Tunneling spin valves based on Fe3GeTe2/h<missing VAR>BN/Fe3GeTe2 van der Waals heterostructures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[313.0, 160, '%', 5],[351.0, 0.66, ',', 5],[358.0, 83, '%', 5],[363.0, 17, '%', 5]

W
###Tunneling spin valves based on Fe$_3$GeTe$_2$/hBN/Fe$_3$GeTe$_2$ van der Waals heterostructures|Zhe Wang,Deepak Sapkota,Takashi Taniguchi,Kenji Watanabe,David Mandrus,Alberto F. Morpurgo###
(783401, 783401)
 Thin van der Waals (vdW) layered magnetic materials disclose the possibilityto realize vdW heterostructures with new functionalities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[292.0, 160, '%', 4],[330.0, 0.66, ',', 4],[337.0, 83, '%', 4],[342.0, 17, '%', 4]

W
###Tunneling spin valves based on Fe$_3$GeTe$_2$/hBN/Fe$_3$GeTe$_2$ van der Waals heterostructures|Zhe Wang,Deepak Sapkota,Takashi Taniguchi,Kenji Watanabe,David Mandrus,Alberto F. Morpurgo###
(783422, 783422)
 Thin van der Waals (vdW) layered magnetic materials disclose the possibilityto realize vdW heterostructures with new functionalities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[271.0, 160, '%', 4],[309.0, 0.66, ',', 4],[316.0, 83, '%', 4],[321.0, 17, '%', 4]

BN
###Tunneling spin valves based on Fe$_3$GeTe$_2$/hBN/Fe$_3$GeTe$_2$ van der Waals heterostructures|Zhe Wang,Deepak Sapkota,Takashi Taniguchi,Kenji Watanabe,David Mandrus,Alberto F. Morpurgo###
(783482, 783483)
 Here we report on therealization and investigation of tunneling spin valves based on van der Waalsheterostructures consisting of an atomically thin h<missing VAR>BN layer acting as tunnelbarrier and two exfoliated Fe3GeTe2 crystals acting as ferromagneticelectrodes.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[210.0, 160, '%', 3],[248.0, 0.66, ',', 3],[255.0, 83, '%', 3],[260.0, 17, '%', 3]

Fe3GeTe2
###Tunneling spin valves based on Fe$_3$GeTe$_2$/hBN/Fe$_3$GeTe$_2$ van der Waals heterostructures|Zhe Wang,Deepak Sapkota,Takashi Taniguchi,Kenji Watanabe,David Mandrus,Alberto F. Morpurgo###
(783502, 783506)
 Here we report on therealization and investigation of tunneling spin valves based on van der Waalsheterostructures consisting of an atomically thin h<missing VAR>BN layer acting as tunnelbarrier and two exfoliated Fe3GeTe2 crystals acting as ferromagneticelectrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[187.0, 160, '%', 3],[225.0, 0.66, ',', 3],[232.0, 83, '%', 3],[237.0, 17, '%', 3]

Fe3GeTe2
###Tunneling spin valves based on Fe$_3$GeTe$_2$/hBN/Fe$_3$GeTe$_2$ van der Waals heterostructures|Zhe Wang,Deepak Sapkota,Takashi Taniguchi,Kenji Watanabe,David Mandrus,Alberto F. Morpurgo###
(783539, 783543)
 Low-temperature anomalous Hall effect measurements show that thinFe3GeTe2 crystals are metallic ferromagnets with an easy axis perpendicular tothe layers, and a very sharp magnetization switching at magnetic field valuesthat depend slightly on their geometry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 160, '%', 2],[188.0, 0.66, ',', 2],[195.0, 83, '%', 2],[200.0, 17, '%', 2]

In
###Tunneling spin valves based on Fe$_3$GeTe$_2$/hBN/Fe$_3$GeTe$_2$ van der Waals heterostructures|Zhe Wang,Deepak Sapkota,Takashi Taniguchi,Kenji Watanabe,David Mandrus,Alberto F. Morpurgo###
(783605, 783605)
 In Fe3GeTe2/h<missing VAR>BN/Fe3GeTe2heterostructures, we observe a textbook behavior of the tunneling resistance,which is minimum (maximum) when the magnetization in the two electrodes isparallel (antiparallel) to each other.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 160, '%', 1],[126.0, 0.66, ',', 1],[133.0, 83, '%', 1],[138.0, 17, '%', 1]

Fe3GeTe2
###Tunneling spin valves based on Fe$_3$GeTe$_2$/hBN/Fe$_3$GeTe$_2$ van der Waals heterostructures|Zhe Wang,Deepak Sapkota,Takashi Taniguchi,Kenji Watanabe,David Mandrus,Alberto F. Morpurgo###
(783607, 783611)
 In Fe3GeTe2/h<missing VAR>BN/Fe3GeTe2heterostructures, we observe a textbook behavior of the tunneling resistance,which is minimum (maximum) when the magnetization in the two electrodes isparallel (antiparallel) to each other.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 160, '%', 1],[120.0, 0.66, ',', 1],[127.0, 83, '%', 1],[132.0, 17, '%', 1]

BN/Fe3GeTe2
###Tunneling spin valves based on Fe$_3$GeTe$_2$/hBN/Fe$_3$GeTe$_2$ van der Waals heterostructures|Zhe Wang,Deepak Sapkota,Takashi Taniguchi,Kenji Watanabe,David Mandrus,Alberto F. Morpurgo###
(783614, 783621)
 In Fe3GeTe2/h<missing VAR>BN/Fe3GeTe2heterostructures, we observe a textbook behavior of the tunneling resistance,which is minimum (maximum) when the magnetization in the two electrodes isparallel (antiparallel) to each other.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[72.0, 160, '%', 1],[110.0, 0.66, ',', 1],[117.0, 83, '%', 1],[122.0, 17, '%', 1]

Fe3GeTe2
###Tunneling spin valves based on Fe$_3$GeTe$_2$/hBN/Fe$_3$GeTe$_2$ van der Waals heterostructures|Zhe Wang,Deepak Sapkota,Takashi Taniguchi,Kenji Watanabe,David Mandrus,Alberto F. Morpurgo###
(783720, 783724)
 The magnetoresistance is 160% at lowtemperature, from which we determine the spin polarization of Fe3GeTe2 to be0.66, corresponding to 83% and 17% of majority and minority carriers,respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 160, '%', 0],[7.0, 0.66, ',', 0],[14.0, 83, '%', 0],[19.0, 17, '%', 0]

W
###Tunneling spin valves based on Fe$_3$GeTe$_2$/hBN/Fe$_3$GeTe$_2$ van der Waals heterostructures|Zhe Wang,Deepak Sapkota,Takashi Taniguchi,Kenji Watanabe,David Mandrus,Alberto F. Morpurgo###
(783889, 783889)
This suggests that the magnetic properties of the surface are representative ofthose of the bulk, as it may be expected for vdW materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[196.0, 160, '%', 2],[158.0, 0.66, ',', 2],[151.0, 83, '%', 2],[146.0, 17, '%', 2]

SO
###Field-free Magnetization Switching by Utilizing the Spin Hall Effect and Interlayer Exchange Coupling of Iridium|Yang Liu,Bing Zhou,Jian-Gang Zhu###
(783948, 783949)
 Magnetization switching by spin-orbit torque (SOT) via spin Hall effectrepresents as a competitive alternative to that by spin-transfer torque (STT)used for magnetoresistive random access memory (MRAM), as it does not requirehigh-density current to go through the tunnel junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Field-free Magnetization Switching by Utilizing the Spin Hall Effect and Interlayer Exchange Coupling of Iridium|Yang Liu,Bing Zhou,Jian-Gang Zhu###
(783985, 783985)
 Magnetization switching by spin-orbit torque (SOT) via spin Hall effectrepresents as a competitive alternative to that by spin-transfer torque (STT)used for magnetoresistive random access memory (MRAM), as it does not requirehigh-density current to go through the tunnel junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Field-free Magnetization Switching by Utilizing the Spin Hall Effect and Interlayer Exchange Coupling of Iridium|Yang Liu,Bing Zhou,Jian-Gang Zhu###
(784055, 784056)
 For perpendicular MRAM<missing VAR>,however, SOT<missing VAR> driven switching of the free layer requires an external in-planefield, which poses limitation for viability in practical applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(Ir)
###Field-free Magnetization Switching by Utilizing the Spin Hall Effect and Interlayer Exchange Coupling of Iridium|Yang Liu,Bing Zhou,Jian-Gang Zhu###
(784134, 784136)
 Here wedemonstrate field-free magnetization switching of a perpendicular magnet byutilizing an Iridium (Ir) layer.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ir
###Field-free Magnetization Switching by Utilizing the Spin Hall Effect and Interlayer Exchange Coupling of Iridium|Yang Liu,Bing Zhou,Jian-Gang Zhu###
(784143, 784143)
 The Ir layer not only provides SOTs via spinHall effect, but also induce interlayer exchange coupling with an in-planemagnetic layer that eliminates the need for the external field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Field-free Magnetization Switching by Utilizing the Spin Hall Effect and Interlayer Exchange Coupling of Iridium|Yang Liu,Bing Zhou,Jian-Gang Zhu###
(784153, 784154)
 The Ir layer not only provides SOTs via spinHall effect, but also induce interlayer exchange coupling with an in-planemagnetic layer that eliminates the need for the external field.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ir
###Field-free Magnetization Switching by Utilizing the Spin Hall Effect and Interlayer Exchange Coupling of Iridium|Yang Liu,Bing Zhou,Jian-Gang Zhu###
(784220, 784220)
 Such dualfunctions of the Ir layer allows future build-up of magnetoresistive stacks formemory and logic applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Field-free Magnetization Switching by Utilizing the Spin Hall Effect and Interlayer Exchange Coupling of Iridium|Yang Liu,Bing Zhou,Jian-Gang Zhu###
(784260, 784261)
 Experimental observations show that the SOT<missing VAR>driven field-free magnetization reversal is characterized as domain nucleationand expansion.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YbNi2
###Magnetic and magnetoresistive behavior of the ferromagnetic heavy fermion YbNi$_2$|O. Olicón,R. Escamilla,A. Conde-Gallardo,F. Morales###
(784372, 784374)
Magnetic and magnetoresistive behavior of the ferromagnetic heavy fermion YbNi2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[315.0, 2, 'K', 7],[320.0, 40, 'K', 7]

H
###Magnetic and magnetoresistive behavior of the ferromagnetic heavy fermion YbNi$_2$|O. Olicón,R. Escamilla,A. Conde-Gallardo,F. Morales###
(784426, 784426)
 We present a study on the magnetic susceptibility chi(T) and electricalresistance, as a function of temperature and magnetic field R(T,H), of theferromagnetic heavy fermion YbNi2.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[263.0, 2, 'K', 6],[268.0, 40, 'K', 6]

YbNi2
###Magnetic and magnetoresistive behavior of the ferromagnetic heavy fermion YbNi$_2$|O. Olicón,R. Escamilla,A. Conde-Gallardo,F. Morales###
(784441, 784443)
 We present a study on the magnetic susceptibility chi(T) and electricalresistance, as a function of temperature and magnetic field R(T,H), of theferromagnetic heavy fermion YbNi2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[246.0, 2, 'K', 6],[251.0, 40, 'K', 6]

C15
###Magnetic and magnetoresistive behavior of the ferromagnetic heavy fermion YbNi$_2$|O. Olicón,R. Escamilla,A. Conde-Gallardo,F. Morales###
(784484, 784485)
 The X<missing VAR>-ray diffraction analysis shows thatthe synthesized polycrystalline samples crystallizes in the cubic Laves phasestructure C15, with a spatial group Fdoverline3m<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[204.0, 2, 'K', 5],[209.0, 40, 'K', 5]

K
###Magnetic and magnetoresistive behavior of the ferromagnetic heavy fermion YbNi$_2$|O. Olicón,R. Escamilla,A. Conde-Gallardo,F. Morales###
(784528, 784528)
 The magneticmeasurements indicate a ferromagnetic behavior with transition temperature at 9K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 2, 'K', 4],[166.0, 40, 'K', 4]

In
###Magnetic and magnetoresistive behavior of the ferromagnetic heavy fermion YbNi$_2$|O. Olicón,R. Escamilla,A. Conde-Gallardo,F. Morales###
(784567, 784567)
 In the ferromagnetic state, theelectrical resistance can be justified by electron-magnon scatteringconsidering the existence of an energy gap in the magnonic spectrum.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 2, 'K', 2],[127.0, 40, 'K', 2]

H
###Magnetic and magnetoresistive behavior of the ferromagnetic heavy fermion YbNi$_2$|O. Olicón,R. Escamilla,A. Conde-Gallardo,F. Morales###
(784671, 784671)
 Magnetoresistance as afunction of applied magnetic field, subtracted from the R(T,H) curves atseveral temperatures, is negative from 2 K until about 40 K for all appliedmagnetic fields.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 2, 'K', 0],[23.0, 40, 'K', 0]

Nd2-xCe
###Hole-pocket-driven superconductivity and its universal features in the electron-doped cuprates|Yangmu Li,W. Tabis,Y. Tang,G. Yu,J. Jaroszynski,N. Barišić,M. Greven###
(784927, 784931)
 Here we report detailed magnetoresistivitymeasurements for the archetypal electron-doped cuprateNd2-xCex<missing VAR>CuO4delta that, in combination with prior data,provide crucial links between the normal and superconducting states and betweenthe electron- and hole-doped parts of the phase diagram.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

CuO4
###Hole-pocket-driven superconductivity and its universal features in the electron-doped cuprates|Yangmu Li,W. Tabis,Y. Tang,G. Yu,J. Jaroszynski,N. Barišić,M. Greven###
(784933, 784935)
 Here we report detailed magnetoresistivitymeasurements for the archetypal electron-doped cuprateNd2-xCex<missing VAR>CuO4delta that, in combination with prior data,provide crucial links between the normal and superconducting states and betweenthe electron- and hole-doped parts of the phase diagram.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Se3
###Evidence for exchange Dirac gap in magneto-transport of topological insulator-magnetic insulator heterostructures|S. R. Yang,Y. T. Fanchiang,C. C. Chen,C. C. Tseng,Y. C. Liu,M. X. Guo,M. Hong,S. F. Lee,J. Kwo###
(785260, 785263)
 Transport signatures of exchange gap opening because of magnetic proximityeffect (MPE) are reported for bilayer structures of Bi2Se3 thin films onyttrium iron garnet (YIG) and thulium iron garnet (TmIG) of perpendicularmagnetic anisotropy (PM<missing VAR>A).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YI
###Evidence for exchange Dirac gap in magneto-transport of topological insulator-magnetic insulator heterostructures|S. R. Yang,Y. T. Fanchiang,C. C. Chen,C. C. Tseng,Y. C. Liu,M. X. Guo,M. Hong,S. F. Lee,J. Kwo###
(785279, 785280)
 Transport signatures of exchange gap opening because of magnetic proximityeffect (MPE) are reported for bilayer structures of Bi2Se3 thin films onyttrium iron garnet (YIG) and thulium iron garnet (TmIG) of perpendicularmagnetic anisotropy (PM<missing VAR>A).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TmI
###Evidence for exchange Dirac gap in magneto-transport of topological insulator-magnetic insulator heterostructures|S. R. Yang,Y. T. Fanchiang,C. C. Chen,C. C. Tseng,Y. C. Liu,M. X. Guo,M. Hong,S. F. Lee,J. Kwo###
(785293, 785294)
 Transport signatures of exchange gap opening because of magnetic proximityeffect (MPE) are reported for bilayer structures of Bi2Se3 thin films onyttrium iron garnet (YIG) and thulium iron garnet (TmIG) of perpendicularmagnetic anisotropy (PM<missing VAR>A).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Evidence for exchange Dirac gap in magneto-transport of topological insulator-magnetic insulator heterostructures|S. R. Yang,Y. T. Fanchiang,C. C. Chen,C. C. Tseng,Y. C. Liu,M. X. Guo,M. Hong,S. F. Lee,J. Kwo###
(785308, 785308)
 Transport signatures of exchange gap opening because of magnetic proximityeffect (MPE) are reported for bilayer structures of Bi2Se3 thin films onyttrium iron garnet (YIG) and thulium iron garnet (TmIG) of perpendicularmagnetic anisotropy (PM<missing VAR>A).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Evidence for exchange Dirac gap in magneto-transport of topological insulator-magnetic insulator heterostructures|S. R. Yang,Y. T. Fanchiang,C. C. Chen,C. C. Tseng,Y. C. Liu,M. X. Guo,M. Hong,S. F. Lee,J. Kwo###
(785346, 785346)
 Pronounced negative magnetoresistance (MR) wasdetected, and attributed to an emergent weak localization (WL) effectsuperimposing on a weak antilocalization (WAL).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Evidence for exchange Dirac gap in magneto-transport of topological insulator-magnetic insulator heterostructures|S. R. Yang,Y. T. Fanchiang,C. C. Chen,C. C. Tseng,Y. C. Liu,M. X. Guo,M. Hong,S. F. Lee,J. Kwo###
(785364, 785364)
 Pronounced negative magnetoresistance (MR) wasdetected, and attributed to an emergent weak localization (WL) effectsuperimposing on a weak antilocalization (WAL).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Evidence for exchange Dirac gap in magneto-transport of topological insulator-magnetic insulator heterostructures|S. R. Yang,Y. T. Fanchiang,C. C. Chen,C. C. Tseng,Y. C. Liu,M. X. Guo,M. Hong,S. F. Lee,J. Kwo###
(785383, 785383)
 Thickness-dependent study showsthat the WL<missing VAR> originates from the time-reversal-symmetry breaking of topologicalsurface states by interfacial exchange coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Evidence for exchange Dirac gap in magneto-transport of topological insulator-magnetic insulator heterostructures|S. R. Yang,Y. T. Fanchiang,C. C. Chen,C. C. Tseng,Y. C. Liu,M. X. Guo,M. Hong,S. F. Lee,J. Kwo###
(785424, 785424)
 The weight of WL<missing VAR> declined whenthe interfacial magnetization was aligned toward the in-plane direction, whichis understood as the effect of tuning the exchange gap size by varying theperpendicular magnetization component.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Evidence for exchange Dirac gap in magneto-transport of topological insulator-magnetic insulator heterostructures|S. R. Yang,Y. T. Fanchiang,C. C. Chen,C. C. Tseng,Y. C. Liu,M. X. Guo,M. Hong,S. F. Lee,J. Kwo###
(785510, 785510)
 Importantly, magnetotransport studyrevealed anomalous Hall effect (AHE) of square loops and anisotropicmagnetoresistance (AMR) characteristic, typifying a ferromagnetic conductor inBi2Se3/TmIG<missing VAR>, and the presence of an interfacial ferromagnetism driven by MPE.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Se3/TmI
###Evidence for exchange Dirac gap in magneto-transport of topological insulator-magnetic insulator heterostructures|S. R. Yang,Y. T. Fanchiang,C. C. Chen,C. C. Tseng,Y. C. Liu,M. X. Guo,M. Hong,S. F. Lee,J. Kwo###
(785547, 785553)
 Importantly, magnetotransport studyrevealed anomalous Hall effect (AHE) of square loops and anisotropicmagnetoresistance (AMR) characteristic, typifying a ferromagnetic conductor inBi2Se3/TmIG<missing VAR>, and the presence of an interfacial ferromagnetism driven by MPE.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

CaAl4
###Shubnikov-de Haas and de Haas-van Alphen oscillations in topological semimetal CaAl4|Sheng Xu,Jian-Feng Zhang,Yi-Yan Wang,Lin-Lin Sun,Huan Wang,Yuan Su,Xiao-Yan Wang,Kai Liu,Tian-Long Xia###
(785672, 785674)
Shubnikov-de Haas and de Haas-van Alphen oscillations in topological semimetal CaAl4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 3000, '%', 2],[60.0, 2.5, 'K', 2],[63.0, 14, 'T', 2]

CaAl4
###Shubnikov-de Haas and de Haas-van Alphen oscillations in topological semimetal CaAl4|Sheng Xu,Jian-Feng Zhang,Yi-Yan Wang,Lin-Lin Sun,Huan Wang,Yuan Su,Xiao-Yan Wang,Kai Liu,Tian-Long Xia###
(785691, 785693)
 We report the magneto-transport properties of CaAl4 single crystals withC2/m<missing VAR> structure at low temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 3000, '%', 1],[41.0, 2.5, 'K', 1],[44.0, 14, 'T', 1]

C2
###Shubnikov-de Haas and de Haas-van Alphen oscillations in topological semimetal CaAl4|Sheng Xu,Jian-Feng Zhang,Yi-Yan Wang,Lin-Lin Sun,Huan Wang,Yuan Su,Xiao-Yan Wang,Kai Liu,Tian-Long Xia###
(785702, 785703)
 We report the magneto-transport properties of CaAl4 single crystals withC2/m<missing VAR> structure at low temperature.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 3000, '%', 1],[31.0, 2.5, 'K', 1],[34.0, 14, 'T', 1]

CaAl4
###Shubnikov-de Haas and de Haas-van Alphen oscillations in topological semimetal CaAl4|Sheng Xu,Jian-Feng Zhang,Yi-Yan Wang,Lin-Lin Sun,Huan Wang,Yuan Su,Xiao-Yan Wang,Kai Liu,Tian-Long Xia###
(785716, 785718)
 CaAl4 exhibits large unsaturatedmagnetoresistance sim3000% at 2.5 K and 14 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 3000, '%', 0],[16.0, 2.5, 'K', 0],[19.0, 14, 'T', 0]

CaAl4
###Shubnikov-de Haas and de Haas-van Alphen oscillations in topological semimetal CaAl4|Sheng Xu,Jian-Feng Zhang,Yi-Yan Wang,Lin-Lin Sun,Huan Wang,Yuan Su,Xiao-Yan Wang,Kai Liu,Tian-Long Xia###
(785799, 785801)
 Thefirst-principles calculations show the electron-hole compensation and thecomplex Fermi surface in CaAl4, to which the two-band model withover-simplified carrier mobility cant<missing VAR> completely apply.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 3000, '%', 2],[65.0, 2.5, 'K', 2],[62.0, 14, 'T', 2]

B
###Shubnikov-de Haas and de Haas-van Alphen oscillations in topological semimetal CaAl4|Sheng Xu,Jian-Feng Zhang,Yi-Yan Wang,Lin-Lin Sun,Huan Wang,Yuan Su,Xiao-Yan Wang,Kai Liu,Tian-Long Xia###
(785850, 785850)
 Evident quantumoscillations have been observed with B//c<missing VAR> and B//ab configurations, from whichthe nontrivial Berry phase is extracted by the multi-band Lifshitz-Kosevichformula fitting.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 3000, '%', 3],[116.0, 2.5, 'K', 3],[113.0, 14, 'T', 3]

B
###Shubnikov-de Haas and de Haas-van Alphen oscillations in topological semimetal CaAl4|Sheng Xu,Jian-Feng Zhang,Yi-Yan Wang,Lin-Lin Sun,Huan Wang,Yuan Su,Xiao-Yan Wang,Kai Liu,Tian-Long Xia###
(785857, 785857)
 Evident quantumoscillations have been observed with B//c<missing VAR> and B//ab configurations, from whichthe nontrivial Berry phase is extracted by the multi-band Lifshitz-Kosevichformula fitting.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 3000, '%', 3],[123.0, 2.5, 'K', 3],[120.0, 14, 'T', 3]

CaAl4
###Shubnikov-de Haas and de Haas-van Alphen oscillations in topological semimetal CaAl4|Sheng Xu,Jian-Feng Zhang,Yi-Yan Wang,Lin-Lin Sun,Huan Wang,Yuan Su,Xiao-Yan Wang,Kai Liu,Tian-Long Xia###
(785970, 785972)
 The calculations also elucidate thatCaAl4 owns a Dirac nodal line type band structure around the Gamma pointin the Z<missing VAR>-Gamma-L<missing VAR> plane, which is protected by the mirror symmetry aswell as the space inversion and time reversal symmetries.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[240.0, 3000, '%', 5],[236.0, 2.5, 'K', 5],[233.0, 14, 'T', 5]

V
###Shubnikov-de Haas and de Haas-van Alphen oscillations in topological semimetal CaAl4|Sheng Xu,Jian-Feng Zhang,Yi-Yan Wang,Lin-Lin Sun,Huan Wang,Yuan Su,Xiao-Yan Wang,Kai Liu,Tian-Long Xia###
(786089, 786089)
 Once the spin-orbitcoupling is included, the crossed nodal line opens a negligible gap (less than3 meV).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[359.0, 3000, '%', 6],[355.0, 2.5, 'K', 6],[352.0, 14, 'T', 6]

Ho0.8Lu0.2B12
###Maltese Cross anisotropy in Ho0.8Lu0.2B12 antiferromagnetic metal with dynamic charge stripes|A. L. Khoroshilov,V. N. Krasnorussky,K. M. Krasikov,A. V. Bogach,V. V. Glushkov,S. V. Demishev,N. A. Samarin,V. V. Voronov,N. Yu. Shitsevalova,V. B. Filipov,S. Gabáni,K. Flachbart,K. Siemensmeyer,S. Yu. Gavrilkin,N. E. Sluchanko###
(786156, 786161)
Maltese Cross anisotropy in Ho0.8Lu0.2B12 antiferromagnetic metal with dynamic charge stripes.
Featurization terminated normally.
0,0,0,0,0.9230769230769231,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.06153846153846154,0,0,0,0.015384615384615385,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[474.0, 4, 'f', 4]

Ho0.8Lu0.2B12
###Maltese Cross anisotropy in Ho0.8Lu0.2B12 antiferromagnetic metal with dynamic charge stripes|A. L. Khoroshilov,V. N. Krasnorussky,K. M. Krasikov,A. V. Bogach,V. V. Glushkov,S. V. Demishev,N. A. Samarin,V. V. Voronov,N. Yu. Shitsevalova,V. B. Filipov,S. Gabáni,K. Flachbart,K. Siemensmeyer,S. Yu. Gavrilkin,N. E. Sluchanko###
(786188, 786193)
 The model strongly correlated electron system Ho0.8Lu0.2B12 whichdemonstrates a cooperative Jahn-Teller instability of the boron sub-lattice incombination with rattling modes of Ho(Lu) ions, dynamic charge stripes andunusual antiferromagnetic (AF) ground state has been studied in detail at lowtemperatures by magnetoresistance, magnetization and heat capacitymeasurements.
Featurization terminated normally.
0,0,0,0,0.9230769230769231,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.06153846153846154,0,0,0,0.015384615384615385,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[442.0, 4, 'f', 3]

Ho(Lu)
###Maltese Cross anisotropy in Ho0.8Lu0.2B12 antiferromagnetic metal with dynamic charge stripes|A. L. Khoroshilov,V. N. Krasnorussky,K. M. Krasikov,A. V. Bogach,V. V. Glushkov,S. V. Demishev,N. A. Samarin,V. V. Voronov,N. Yu. Shitsevalova,V. B. Filipov,S. Gabáni,K. Flachbart,K. Siemensmeyer,S. Yu. Gavrilkin,N. E. Sluchanko###
(786233, 786236)
 The model strongly correlated electron system Ho0.8Lu0.2B12 whichdemonstrates a cooperative Jahn-Teller instability of the boron sub-lattice incombination with rattling modes of Ho(Lu) ions, dynamic charge stripes andunusual antiferromagnetic (AF) ground state has been studied in detail at lowtemperatures by magnetoresistance, magnetization and heat capacitymeasurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[399.0, 4, 'f', 3]

F
###Maltese Cross anisotropy in Ho0.8Lu0.2B12 antiferromagnetic metal with dynamic charge stripes|A. L. Khoroshilov,V. N. Krasnorussky,K. M. Krasikov,A. V. Bogach,V. V. Glushkov,S. V. Demishev,N. A. Samarin,V. V. Voronov,N. Yu. Shitsevalova,V. B. Filipov,S. Gabáni,K. Flachbart,K. Siemensmeyer,S. Yu. Gavrilkin,N. E. Sluchanko###
(786256, 786256)
 The model strongly correlated electron system Ho0.8Lu0.2B12 whichdemonstrates a cooperative Jahn-Teller instability of the boron sub-lattice incombination with rattling modes of Ho(Lu) ions, dynamic charge stripes andunusual antiferromagnetic (AF) ground state has been studied in detail at lowtemperatures by magnetoresistance, magnetization and heat capacitymeasurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[379.0, 4, 'f', 3]

H
###Maltese Cross anisotropy in Ho0.8Lu0.2B12 antiferromagnetic metal with dynamic charge stripes|A. L. Khoroshilov,V. N. Krasnorussky,K. M. Krasikov,A. V. Bogach,V. V. Glushkov,S. V. Demishev,N. A. Samarin,V. V. Voronov,N. Yu. Shitsevalova,V. B. Filipov,S. Gabáni,K. Flachbart,K. Siemensmeyer,S. Yu. Gavrilkin,N. E. Sluchanko###
(786317, 786317)
 Based on received results it turns out that the angular H-fi-T<missing VAR>magnetic phase diagrams of this non-equilibrium AF metal can be reconstructedin the form of a Maltese cross.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[318.0, 4, 'f', 2]

F
###Maltese Cross anisotropy in Ho0.8Lu0.2B12 antiferromagnetic metal with dynamic charge stripes|A. L. Khoroshilov,V. N. Krasnorussky,K. M. Krasikov,A. V. Bogach,V. V. Glushkov,S. V. Demishev,N. A. Samarin,V. V. Voronov,N. Yu. Shitsevalova,V. B. Filipov,S. Gabáni,K. Flachbart,K. Siemensmeyer,S. Yu. Gavrilkin,N. E. Sluchanko###
(786339, 786339)
 Based on received results it turns out that the angular H-fi-T<missing VAR>magnetic phase diagrams of this non-equilibrium AF metal can be reconstructedin the form of a Maltese cross.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[296.0, 4, 'f', 2]

F
###Maltese Cross anisotropy in Ho0.8Lu0.2B12 antiferromagnetic metal with dynamic charge stripes|A. L. Khoroshilov,V. N. Krasnorussky,K. M. Krasikov,A. V. Bogach,V. V. Glushkov,S. V. Demishev,N. A. Samarin,V. V. Voronov,N. Yu. Shitsevalova,V. B. Filipov,S. Gabáni,K. Flachbart,K. Siemensmeyer,S. Yu. Gavrilkin,N. E. Sluchanko###
(786370, 786370)
 The dramatic AF ground state symmetry loweringof this dodecaboride with fcc crystal structure can be attributed to theredistribution of conduction electrons which leave the R<missing VAR>KKY oscillations of theelectron spin density to participate in the dynamic charge stripes providingwith extraordinary changes in the indirect exchange interaction betweenmagnetic moments of Ho3 ions and resulting in the emergence of a number ofvarious magnetic phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[265.0, 4, 'f', 1]

KKY
###Maltese Cross anisotropy in Ho0.8Lu0.2B12 antiferromagnetic metal with dynamic charge stripes|A. L. Khoroshilov,V. N. Krasnorussky,K. M. Krasikov,A. V. Bogach,V. V. Glushkov,S. V. Demishev,N. A. Samarin,V. V. Voronov,N. Yu. Shitsevalova,V. B. Filipov,S. Gabáni,K. Flachbart,K. Siemensmeyer,S. Yu. Gavrilkin,N. E. Sluchanko###
(786421, 786423)
 The dramatic AF ground state symmetry loweringof this dodecaboride with fcc crystal structure can be attributed to theredistribution of conduction electrons which leave the R<missing VAR>KKY oscillations of theelectron spin density to participate in the dynamic charge stripes providingwith extraordinary changes in the indirect exchange interaction betweenmagnetic moments of Ho3 ions and resulting in the emergence of a number ofvarious magnetic phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[212.0, 4, 'f', 1]

Ho3
###Maltese Cross anisotropy in Ho0.8Lu0.2B12 antiferromagnetic metal with dynamic charge stripes|A. L. Khoroshilov,V. N. Krasnorussky,K. M. Krasikov,A. V. Bogach,V. V. Glushkov,S. V. Demishev,N. A. Samarin,V. V. Voronov,N. Yu. Shitsevalova,V. B. Filipov,S. Gabáni,K. Flachbart,K. Siemensmeyer,S. Yu. Gavrilkin,N. E. Sluchanko###
(786480, 786481)
 The dramatic AF ground state symmetry loweringof this dodecaboride with fcc crystal structure can be attributed to theredistribution of conduction electrons which leave the R<missing VAR>KKY oscillations of theelectron spin density to participate in the dynamic charge stripes providingwith extraordinary changes in the indirect exchange interaction betweenmagnetic moments of Ho3 ions and resulting in the emergence of a number ofvarious magnetic phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 4, 'f', 1]

F
###Maltese Cross anisotropy in Ho0.8Lu0.2B12 antiferromagnetic metal with dynamic charge stripes|A. L. Khoroshilov,V. N. Krasnorussky,K. M. Krasikov,A. V. Bogach,V. V. Glushkov,S. V. Demishev,N. A. Samarin,V. V. Voronov,N. Yu. Shitsevalova,V. B. Filipov,S. Gabáni,K. Flachbart,K. Siemensmeyer,S. Yu. Gavrilkin,N. E. Sluchanko###
(786541, 786541)
 It is also shown that the two main contributions tomagnetoresistance in the complex AF phase, the (i) positive linear on magneticfield and the (ii) negative quadratic component can be separated and analyzedquantitatively, correspondingly, in terms of charge carrier scattering on spindensity wave (5d) component of the magnetic structure and on local 4f-5d<missing VAR> spinfluctuations of holmium sites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 4, 'f', 0]

In
###The Hall effect in ballistic flow of two-dimensional interacting particles|P. S. Alekseev,M. A. Semina###
(786683, 786683)
 In high-quality solid-state systems at low temperatures, the hydrodynamic orthe ballistic regimes of heat and charge transport are realized in the electronand the phonon systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###The Hall effect in ballistic flow of two-dimensional interacting particles|P. S. Alekseev,M. A. Semina###
(786745, 786745)
 In these regimes, the thermal and the electricconductance of the sample can reach abnormally large magnitudes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###The Hall effect in ballistic flow of two-dimensional interacting particles|P. S. Alekseev,M. A. Semina###
(786782, 786782)
 In this paper,we study the Hall effect in a system of interacting two-dimensional chargedparticles in a ballistic regime.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###The Hall effect in ballistic flow of two-dimensional interacting particles|P. S. Alekseev,M. A. Semina###
(786895, 786895)
 Inone-component (electron or hole) systems the Hall coefficient turns out to onehalf compared with the one in conventional disordered Ohmic samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###The Hall effect in ballistic flow of two-dimensional interacting particles|P. S. Alekseev,M. A. Semina###
(786986, 786987)
 Thisresult is consistent with the recent experiment on measuring of the Hallresistance in ultra-high-mobility GaAs quantum wells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###The Hall effect in ballistic flow of two-dimensional interacting particles|P. S. Alekseev,M. A. Semina###
(786994, 786994)
 In two-componentelectron-hole systems the Hall electric field depends linearly on thedifference between the concentrations of electrons and holes near the chargeneutrality point (the equilibrium electron and hole densities coincide) andsaturates to the Hall field of a one-component system far from the chargeneutrality point.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CrCl3
###Atomically Thin CrCl3: An in-Plane Layered Antiferromagnetic Insulator|Xinghan Cai,Tiancheng Song,Nathan P. Wilson,Genevieve Clark,Minhao He,Xiaoou Zhang,Takashi Taniguchi,Kenji Watanabe,Wang Yao,Di Xiao,Michael A. McGuire,David H. Cobden,Xiaodong Xu###
(787221, 787223)
Atomically Thin CrCl3 An in-Plane Layered Antiferromagnetic Insulator.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 2, 'D', 2],[238.0, 870, 'nm', 4],[391.0, 2, 'D', 7]

W
###Atomically Thin CrCl3: An in-Plane Layered Antiferromagnetic Insulator|Xinghan Cai,Tiancheng Song,Nathan P. Wilson,Genevieve Clark,Minhao He,Xiaoou Zhang,Takashi Taniguchi,Kenji Watanabe,Wang Yao,Di Xiao,Michael A. McGuire,David H. Cobden,Xiaodong Xu###
(787267, 787267)
 The recent discovery of magnetism in atomically thin layers of van der Waals(vdW) crystals has created new opportunities for exploring magnetic phenomenain the two-dimensional (2D) limit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 2, 'D', 1],[194.0, 870, 'nm', 3],[347.0, 2, 'D', 6]

In
###Atomically Thin CrCl3: An in-Plane Layered Antiferromagnetic Insulator|Xinghan Cai,Tiancheng Song,Nathan P. Wilson,Genevieve Clark,Minhao He,Xiaoou Zhang,Takashi Taniguchi,Kenji Watanabe,Wang Yao,Di Xiao,Michael A. McGuire,David H. Cobden,Xiaodong Xu###
(787305, 787305)
 In most 2D magnets studied to date thec<missing VAR>-axis is an easy axis, so that at zero applied field the polarization of eachlayer is perpendicular to the plane.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 2, 'D', 0],[156.0, 870, 'nm', 2],[309.0, 2, 'D', 5]

CrCl3
###Atomically Thin CrCl3: An in-Plane Layered Antiferromagnetic Insulator|Xinghan Cai,Tiancheng Song,Nathan P. Wilson,Genevieve Clark,Minhao He,Xiaoou Zhang,Takashi Taniguchi,Kenji Watanabe,Wang Yao,Di Xiao,Michael A. McGuire,David H. Cobden,Xiaodong Xu###
(787382, 787384)
 Here, we demonstrate that atomically thinCrCl3 is a layered antiferromagnetic insulator with an easy-plane normal to thec<missing VAR>-axis, that is the polarization is in the plane of each layer and has nopreferred direction within it.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 2, 'D', 1],[77.0, 870, 'nm', 1],[230.0, 2, 'D', 4]

CrCl3
###Atomically Thin CrCl3: An in-Plane Layered Antiferromagnetic Insulator|Xinghan Cai,Tiancheng Song,Nathan P. Wilson,Genevieve Clark,Minhao He,Xiaoou Zhang,Takashi Taniguchi,Kenji Watanabe,Wang Yao,Di Xiao,Michael A. McGuire,David H. Cobden,Xiaodong Xu###
(787514, 787516)
We investigate the in-plane magnetic order using tunneling magnetoresistance ingraphene/CrCl3/graphene tunnel junctions, establishing that the interlayercoupling is antiferromagnetic down to the bilayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[206.0, 2, 'D', 3],[53.0, 870, 'nm', 1],[98.0, 2, 'D', 2]

CrCl3
###Atomically Thin CrCl3: An in-Plane Layered Antiferromagnetic Insulator|Xinghan Cai,Tiancheng Song,Nathan P. Wilson,Genevieve Clark,Minhao He,Xiaoou Zhang,Takashi Taniguchi,Kenji Watanabe,Wang Yao,Di Xiao,Michael A. McGuire,David H. Cobden,Xiaodong Xu###
(787594, 787596)
 Our result shows that CrCl3 should be useful forstudying the physics of 2D phase transitions and for making new kinds of vdWspintronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[286.0, 2, 'D', 5],[133.0, 870, 'nm', 3],[18.0, 2, 'D', 0]

W
###Atomically Thin CrCl3: An in-Plane Layered Antiferromagnetic Insulator|Xinghan Cai,Tiancheng Song,Nathan P. Wilson,Genevieve Clark,Minhao He,Xiaoou Zhang,Takashi Taniguchi,Kenji Watanabe,Wang Yao,Di Xiao,Michael A. McGuire,David H. Cobden,Xiaodong Xu###
(787633, 787633)
 Our result shows that CrCl3 should be useful forstudying the physics of 2D phase transitions and for making new kinds of vdWspintronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[325.0, 2, 'D', 5],[172.0, 870, 'nm', 3],[19.0, 2, 'D', 0]

YBa2Cu3O7/La
###YBa2Cu3O7/LaXMnO3 (X: Ca, Sr) based Superconductor/Ferromagnet/Superconductor junctions with memory functionality|R. de Andres Prada,T. Golod,O. M. Kapran,E. A. Borodianskyi,Ch. Bernhard,V. M. Krasnov###
(787649, 787657)
YBa2Cu3O7/LaX<missing VAR>MnO3 (X<missing VAR> Ca, Sr) based Superconductor/Ferromagnet/Superconductor junctions with memory functionality.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

MnO3
###YBa2Cu3O7/LaXMnO3 (X: Ca, Sr) based Superconductor/Ferromagnet/Superconductor junctions with memory functionality|R. de Andres Prada,T. Golod,O. M. Kapran,E. A. Borodianskyi,Ch. Bernhard,V. M. Krasnov###
(787659, 787661)
YBa2Cu3O7/LaX<missing VAR>MnO3 (X<missing VAR> Ca, Sr) based Superconductor/Ferromagnet/Superconductor junctions with memory functionality.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ca
###YBa2Cu3O7/LaXMnO3 (X: Ca, Sr) based Superconductor/Ferromagnet/Superconductor junctions with memory functionality|R. de Andres Prada,T. Golod,O. M. Kapran,E. A. Borodianskyi,Ch. Bernhard,V. M. Krasnov###
(787666, 787666)
YBa2Cu3O7/LaX<missing VAR>MnO3 (X<missing VAR> Ca, Sr) based Superconductor/Ferromagnet/Superconductor junctions with memory functionality.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr
###YBa2Cu3O7/LaXMnO3 (X: Ca, Sr) based Superconductor/Ferromagnet/Superconductor junctions with memory functionality|R. de Andres Prada,T. Golod,O. M. Kapran,E. A. Borodianskyi,Ch. Bernhard,V. M. Krasnov###
(787669, 787669)
YBa2Cu3O7/LaX<missing VAR>MnO3 (X<missing VAR> Ca, Sr) based Superconductor/Ferromagnet/Superconductor junctions with memory functionality.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###YBa2Cu3O7/LaXMnO3 (X: Ca, Sr) based Superconductor/Ferromagnet/Superconductor junctions with memory functionality|R. de Andres Prada,T. Golod,O. M. Kapran,E. A. Borodianskyi,Ch. Bernhard,V. M. Krasnov###
(787761, 787761)
 Here we fabricate and studyexperimentally nano-scale Superconductor/ Ferromagnet/Superconductor junctionswith the high-Tc cuprate superconductor YBa2Cu3O7 and the colossalmagnetoresistive (CMR) manganite ferromagnets LaX<missing VAR>MnO3 (X<missing VAR> Ca or Sr).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YBa2Cu3O7
###YBa2Cu3O7/LaXMnO3 (X: Ca, Sr) based Superconductor/Ferromagnet/Superconductor junctions with memory functionality|R. de Andres Prada,T. Golod,O. M. Kapran,E. A. Borodianskyi,Ch. Bernhard,V. M. Krasnov###
(787767, 787773)
 Here we fabricate and studyexperimentally nano-scale Superconductor/ Ferromagnet/Superconductor junctionswith the high-Tc cuprate superconductor YBa2Cu3O7 and the colossalmagnetoresistive (CMR) manganite ferromagnets LaX<missing VAR>MnO3 (X<missing VAR> Ca or Sr).
Featurization terminated normally.
0,0,0,0,0,0,0,0.5384615384615384,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23076923076923078,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15384615384615385,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###YBa2Cu3O7/LaXMnO3 (X: Ca, Sr) based Superconductor/Ferromagnet/Superconductor junctions with memory functionality|R. de Andres Prada,T. Golod,O. M. Kapran,E. A. Borodianskyi,Ch. Bernhard,V. M. Krasnov###
(787785, 787785)
 Here we fabricate and studyexperimentally nano-scale Superconductor/ Ferromagnet/Superconductor junctionswith the high-Tc cuprate superconductor YBa2Cu3O7 and the colossalmagnetoresistive (CMR) manganite ferromagnets LaX<missing VAR>MnO3 (X<missing VAR> Ca or Sr).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La
###YBa2Cu3O7/LaXMnO3 (X: Ca, Sr) based Superconductor/Ferromagnet/Superconductor junctions with memory functionality|R. de Andres Prada,T. Golod,O. M. Kapran,E. A. Borodianskyi,Ch. Bernhard,V. M. Krasnov###
(787794, 787794)
 Here we fabricate and studyexperimentally nano-scale Superconductor/ Ferromagnet/Superconductor junctionswith the high-Tc cuprate superconductor YBa2Cu3O7 and the colossalmagnetoresistive (CMR) manganite ferromagnets LaX<missing VAR>MnO3 (X<missing VAR> Ca or Sr).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnO3
###YBa2Cu3O7/LaXMnO3 (X: Ca, Sr) based Superconductor/Ferromagnet/Superconductor junctions with memory functionality|R. de Andres Prada,T. Golod,O. M. Kapran,E. A. Borodianskyi,Ch. Bernhard,V. M. Krasnov###
(787796, 787798)
 Here we fabricate and studyexperimentally nano-scale Superconductor/ Ferromagnet/Superconductor junctionswith the high-Tc cuprate superconductor YBa2Cu3O7 and the colossalmagnetoresistive (CMR) manganite ferromagnets LaX<missing VAR>MnO3 (X<missing VAR> Ca or Sr).
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ca
###YBa2Cu3O7/LaXMnO3 (X: Ca, Sr) based Superconductor/Ferromagnet/Superconductor junctions with memory functionality|R. de Andres Prada,T. Golod,O. M. Kapran,E. A. Borodianskyi,Ch. Bernhard,V. M. Krasnov###
(787803, 787803)
 Here we fabricate and studyexperimentally nano-scale Superconductor/ Ferromagnet/Superconductor junctionswith the high-Tc cuprate superconductor YBa2Cu3O7 and the colossalmagnetoresistive (CMR) manganite ferromagnets LaX<missing VAR>MnO3 (X<missing VAR> Ca or Sr).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr
###YBa2Cu3O7/LaXMnO3 (X: Ca, Sr) based Superconductor/Ferromagnet/Superconductor junctions with memory functionality|R. de Andres Prada,T. Golod,O. M. Kapran,E. A. Borodianskyi,Ch. Bernhard,V. M. Krasnov###
(787807, 787807)
 Here we fabricate and studyexperimentally nano-scale Superconductor/ Ferromagnet/Superconductor junctionswith the high-Tc cuprate superconductor YBa2Cu3O7 and the colossalmagnetoresistive (CMR) manganite ferromagnets LaX<missing VAR>MnO3 (X<missing VAR> Ca or Sr).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###YBa2Cu3O7/LaXMnO3 (X: Ca, Sr) based Superconductor/Ferromagnet/Superconductor junctions with memory functionality|R. de Andres Prada,T. Golod,O. M. Kapran,E. A. Borodianskyi,Ch. Bernhard,V. M. Krasnov###
(787869, 787869)
 The CMR phenomenon translates the magnetization loop into ahysteretic magnetoresistance loop.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###YBa2Cu3O7/LaXMnO3 (X: Ca, Sr) based Superconductor/Ferromagnet/Superconductor junctions with memory functionality|R. de Andres Prada,T. Golod,O. M. Kapran,E. A. Borodianskyi,Ch. Bernhard,V. M. Krasnov###
(787924, 787924)
 The latter facilitates a memoryfunctionality of such a junction with just a single CMR ferromagnetic layer.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###YBa2Cu3O7/LaXMnO3 (X: Ca, Sr) based Superconductor/Ferromagnet/Superconductor junctions with memory functionality|R. de Andres Prada,T. Golod,O. M. Kapran,E. A. Borodianskyi,Ch. Bernhard,V. M. Krasnov###
(787984, 787984)
 The CMRfacilitates a large read-out signal in a small applied field.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###YBa2Cu3O7/LaXMnO3 (X: Ca, Sr) based Superconductor/Ferromagnet/Superconductor junctions with memory functionality|R. de Andres Prada,T. Golod,O. M. Kapran,E. A. Borodianskyi,Ch. Bernhard,V. M. Krasnov###
(788029, 788029)
 We argue thatsuch a simple single layer CMR junction can operate as a memory cell both inthe superconducting state at cryogenic temperatures and in the normal state upto room temperature.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TaP
###Pressure-tuning of the electrical-transport properties in the Weyl semimetal TaP|M. Besser,R. D. dos Reis,F. -R. Fan,M. O. Ajeesh,Y. Sun,M. Schmidt,C. Felser,M. Nicklas###
(788114, 788115)
Pressure-tuning of the electrical-transport properties in the Weyl semimetal TaP.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[176.0, 1.2, 'GPa', 3]

TaP
###Pressure-tuning of the electrical-transport properties in the Weyl semimetal TaP|M. Besser,R. D. dos Reis,F. -R. Fan,M. O. Ajeesh,Y. Sun,M. Schmidt,C. Felser,M. Nicklas###
(788149, 788150)
 We investigated the pressure evolution of the electrical transport in thealmost compensated Weyl semimetal TaP.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 1.2, 'GPa', 2]

In
###Pressure-tuning of the electrical-transport properties in the Weyl semimetal TaP|M. Besser,R. D. dos Reis,F. -R. Fan,M. O. Ajeesh,Y. Sun,M. Schmidt,C. Felser,M. Nicklas###
(788153, 788153)
 In addition, we obtained information onthe modifications of the Fermi-surface topology with pressure from the analysisof pronounced Shubnikov-de Haas (SdH) quantum oscillations present in theHall-effect and magnetoresistance data.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 1.2, 'GPa', 1]

H
###Pressure-tuning of the electrical-transport properties in the Weyl semimetal TaP|M. Besser,R. D. dos Reis,F. -R. Fan,M. O. Ajeesh,Y. Sun,M. Schmidt,C. Felser,M. Nicklas###
(788204, 788204)
 In addition, we obtained information onthe modifications of the Fermi-surface topology with pressure from the analysisof pronounced Shubnikov-de Haas (SdH) quantum oscillations present in theHall-effect and magnetoresistance data.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 1.2, 'GPa', 1]

H
###Pressure-tuning of the electrical-transport properties in the Weyl semimetal TaP|M. Besser,R. D. dos Reis,F. -R. Fan,M. O. Ajeesh,Y. Sun,M. Schmidt,C. Felser,M. Nicklas###
(788340, 788340)
 Only weak changes in the SdH frequenciesfor Ba and Bc<missing VAR> point at a robust Fermi-surface topology.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 1.2, 'GPa', 1]

B
###Pressure-tuning of the electrical-transport properties in the Weyl semimetal TaP|M. Besser,R. D. dos Reis,F. -R. Fan,M. O. Ajeesh,Y. Sun,M. Schmidt,C. Felser,M. Nicklas###
(788347, 788347)
 Only weak changes in the SdH frequenciesfor Ba and Bc<missing VAR> point at a robust Fermi-surface topology.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 1.2, 'GPa', 1]

B
###Pressure-tuning of the electrical-transport properties in the Weyl semimetal TaP|M. Besser,R. D. dos Reis,F. -R. Fan,M. O. Ajeesh,Y. Sun,M. Schmidt,C. Felser,M. Nicklas###
(788352, 788352)
 Only weak changes in the SdH frequenciesfor Ba and Bc<missing VAR> point at a robust Fermi-surface topology.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 1.2, 'GPa', 1]

In
###Pressure-tuning of the electrical-transport properties in the Weyl semimetal TaP|M. Besser,R. D. dos Reis,F. -R. Fan,M. O. Ajeesh,Y. Sun,M. Schmidt,C. Felser,M. Nicklas###
(788370, 788370)
 In contrast to thestability of the Fermi-surface topology and of the density of charge carriers,our results evidence a strong pressure variation of the magnitude of transversemagnetoresistance for Ba contrary to the results for Bc<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 1.2, 'GPa', 2]

B
###Pressure-tuning of the electrical-transport properties in the Weyl semimetal TaP|M. Besser,R. D. dos Reis,F. -R. Fan,M. O. Ajeesh,Y. Sun,M. Schmidt,C. Felser,M. Nicklas###
(788436, 788436)
 In contrast to thestability of the Fermi-surface topology and of the density of charge carriers,our results evidence a strong pressure variation of the magnitude of transversemagnetoresistance for Ba contrary to the results for Bc<missing VAR>.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 1.2, 'GPa', 2]

B
###Pressure-tuning of the electrical-transport properties in the Weyl semimetal TaP|M. Besser,R. D. dos Reis,F. -R. Fan,M. O. Ajeesh,Y. Sun,M. Schmidt,C. Felser,M. Nicklas###
(788449, 788449)
 In contrast to thestability of the Fermi-surface topology and of the density of charge carriers,our results evidence a strong pressure variation of the magnitude of transversemagnetoresistance for Ba contrary to the results for Bc<missing VAR>.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 1.2, 'GPa', 2]

ZrSiS
###Highly anisotropic interlayer magnetoresistance in ZrSiS nodal-line Dirac semimetal|M. Novak,S. N. Zhang,F. Orbanic,N. Biliskov,G. Eguchi,S. Paschen,A. Kimura,X. X. Wang,T. Osada,K. Uchida,M. Sato,Q. S. Wu,O. V. Yazyev,I. Kokanovic###
(788510, 788512)
Highly anisotropic interlayer magnetoresistance in ZrSiS nodal-line Dirac semimetal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZrSiS
###Highly anisotropic interlayer magnetoresistance in ZrSiS nodal-line Dirac semimetal|M. Novak,S. N. Zhang,F. Orbanic,N. Biliskov,G. Eguchi,S. Paschen,A. Kimura,X. X. Wang,T. Osada,K. Uchida,M. Sato,Q. S. Wu,O. V. Yazyev,I. Kokanovic###
(788556, 788558)
 We instigate the angle-dependent magnetoresistance (AMR) of the layerednodal-line Dirac semimetal ZrSiS for the in-plane and out-of-plane currentdirections.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Highly anisotropic interlayer magnetoresistance in ZrSiS nodal-line Dirac semimetal|M. Novak,S. N. Zhang,F. Orbanic,N. Biliskov,G. Eguchi,S. Paschen,A. Kimura,X. X. Wang,T. Osada,K. Uchida,M. Sato,Q. S. Wu,O. V. Yazyev,I. Kokanovic###
(788947, 788947)
 Finally, by combining ourtheoretical model and experimental data we estimate the average relaxation timeof 2.6times10-14s<missing VAR> and the mean free path of 15nm at 1.8K in oursamples of ZrSiS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZrSiS
###Highly anisotropic interlayer magnetoresistance in ZrSiS nodal-line Dirac semimetal|M. Novak,S. N. Zhang,F. Orbanic,N. Biliskov,G. Eguchi,S. Paschen,A. Kimura,X. X. Wang,T. Osada,K. Uchida,M. Sato,Q. S. Wu,O. V. Yazyev,I. Kokanovic###
(788958, 788960)
 Finally, by combining ourtheoretical model and experimental data we estimate the average relaxation timeof 2.6times10-14s<missing VAR> and the mean free path of 15nm at 1.8K in oursamples of ZrSiS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe3GeTe2
###Antisymmetric magnetoresistance in van der Waals Fe3GeTe2/graphite/Fe3GeTe2 tri-layer heterostructures|Sultan Albarakati,Cheng Tan,Zhong-Jia Chen,James G. Partridge,Guolin Zheng,Lawrence Farrar,Edwin L. H. Mayes,Matthew R. Field,Changgu Lee,Yihao Wang,Yiming Xiong,Mingliang Tian,Feixiang Xiang,Alex R. Hamilton,Oleg A. Tretiakov,Dimitrie Culcer,Yu-Jun Zhao,Lan Wang###
(788983, 788987)
Antisymmetric magnetoresistance in van der Waals Fe3GeTe2/graphite/Fe3GeTe2 tri-layer heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe3GeTe2
###Antisymmetric magnetoresistance in van der Waals Fe3GeTe2/graphite/Fe3GeTe2 tri-layer heterostructures|Sultan Albarakati,Cheng Tan,Zhong-Jia Chen,James G. Partridge,Guolin Zheng,Lawrence Farrar,Edwin L. H. Mayes,Matthew R. Field,Changgu Lee,Yihao Wang,Yiming Xiong,Mingliang Tian,Feixiang Xiang,Alex R. Hamilton,Oleg A. Tretiakov,Dimitrie Culcer,Yu-Jun Zhao,Lan Wang###
(788991, 788995)
Antisymmetric magnetoresistance in van der Waals Fe3GeTe2/graphite/Fe3GeTe2 tri-layer heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Antisymmetric magnetoresistance in van der Waals Fe3GeTe2/graphite/Fe3GeTe2 tri-layer heterostructures|Sultan Albarakati,Cheng Tan,Zhong-Jia Chen,James G. Partridge,Guolin Zheng,Lawrence Farrar,Edwin L. H. Mayes,Matthew R. Field,Changgu Lee,Yihao Wang,Yiming Xiong,Mingliang Tian,Feixiang Xiang,Alex R. Hamilton,Oleg A. Tretiakov,Dimitrie Culcer,Yu-Jun Zhao,Lan Wang###
(789012, 789012)
 Van der Waals (vdW) ferromagnetic materials are rapidly establishingthemselves as effective building blocks for next generation spintronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Antisymmetric magnetoresistance in van der Waals Fe3GeTe2/graphite/Fe3GeTe2 tri-layer heterostructures|Sultan Albarakati,Cheng Tan,Zhong-Jia Chen,James G. Partridge,Guolin Zheng,Lawrence Farrar,Edwin L. H. Mayes,Matthew R. Field,Changgu Lee,Yihao Wang,Yiming Xiong,Mingliang Tian,Feixiang Xiang,Alex R. Hamilton,Oleg A. Tretiakov,Dimitrie Culcer,Yu-Jun Zhao,Lan Wang###
(789059, 789059)
When layered with non-magnetic vdW materials, such as graphene and/ortopological insulators, vdW heterostructures can be assembled (with norequirement for lattice matching) to provide otherwise unattainable devicestructures and functionalities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Antisymmetric magnetoresistance in van der Waals Fe3GeTe2/graphite/Fe3GeTe2 tri-layer heterostructures|Sultan Albarakati,Cheng Tan,Zhong-Jia Chen,James G. Partridge,Guolin Zheng,Lawrence Farrar,Edwin L. H. Mayes,Matthew R. Field,Changgu Lee,Yihao Wang,Yiming Xiong,Mingliang Tian,Feixiang Xiang,Alex R. Hamilton,Oleg A. Tretiakov,Dimitrie Culcer,Yu-Jun Zhao,Lan Wang###
(789081, 789081)
When layered with non-magnetic vdW materials, such as graphene and/ortopological insulators, vdW heterostructures can be assembled (with norequirement for lattice matching) to provide otherwise unattainable devicestructures and functionalities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe3GeTe2
###Antisymmetric magnetoresistance in van der Waals Fe3GeTe2/graphite/Fe3GeTe2 tri-layer heterostructures|Sultan Albarakati,Cheng Tan,Zhong-Jia Chen,James G. Partridge,Guolin Zheng,Lawrence Farrar,Edwin L. H. Mayes,Matthew R. Field,Changgu Lee,Yihao Wang,Yiming Xiong,Mingliang Tian,Feixiang Xiang,Alex R. Hamilton,Oleg A. Tretiakov,Dimitrie Culcer,Yu-Jun Zhao,Lan Wang###
(789159, 789163)
 We report a hitherto rarely seen antisymmetricmagnetoresistance (MR) effect in van der Waals heterostructuredFe3GeTe2/graphite/Fe3GeTe2 devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe3GeTe2
###Antisymmetric magnetoresistance in van der Waals Fe3GeTe2/graphite/Fe3GeTe2 tri-layer heterostructures|Sultan Albarakati,Cheng Tan,Zhong-Jia Chen,James G. Partridge,Guolin Zheng,Lawrence Farrar,Edwin L. H. Mayes,Matthew R. Field,Changgu Lee,Yihao Wang,Yiming Xiong,Mingliang Tian,Feixiang Xiang,Alex R. Hamilton,Oleg A. Tretiakov,Dimitrie Culcer,Yu-Jun Zhao,Lan Wang###
(789167, 789171)
 We report a hitherto rarely seen antisymmetricmagnetoresistance (MR) effect in van der Waals heterostructuredFe3GeTe2/graphite/Fe3GeTe2 devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Antisymmetric magnetoresistance in van der Waals Fe3GeTe2/graphite/Fe3GeTe2 tri-layer heterostructures|Sultan Albarakati,Cheng Tan,Zhong-Jia Chen,James G. Partridge,Guolin Zheng,Lawrence Farrar,Edwin L. H. Mayes,Matthew R. Field,Changgu Lee,Yihao Wang,Yiming Xiong,Mingliang Tian,Feixiang Xiang,Alex R. Hamilton,Oleg A. Tretiakov,Dimitrie Culcer,Yu-Jun Zhao,Lan Wang###
(789216, 789216)
 Unlike conventional giant magnetoresistance(GMR) which is characterized by two resistance states, the MR in these vdWheterostructures features distinct high, intermediate and low resistancestates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Antisymmetric magnetoresistance in van der Waals Fe3GeTe2/graphite/Fe3GeTe2 tri-layer heterostructures|Sultan Albarakati,Cheng Tan,Zhong-Jia Chen,James G. Partridge,Guolin Zheng,Lawrence Farrar,Edwin L. H. Mayes,Matthew R. Field,Changgu Lee,Yihao Wang,Yiming Xiong,Mingliang Tian,Feixiang Xiang,Alex R. Hamilton,Oleg A. Tretiakov,Dimitrie Culcer,Yu-Jun Zhao,Lan Wang###
(789317, 789317)
 After theoreticalcalculations, the three resistance behavior was attributed to a spin momentumlocking induced spin polarized current at the graphite/FGT interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Antisymmetric magnetoresistance in van der Waals Fe3GeTe2/graphite/Fe3GeTe2 tri-layer heterostructures|Sultan Albarakati,Cheng Tan,Zhong-Jia Chen,James G. Partridge,Guolin Zheng,Lawrence Farrar,Edwin L. H. Mayes,Matthew R. Field,Changgu Lee,Yihao Wang,Yiming Xiong,Mingliang Tian,Feixiang Xiang,Alex R. Hamilton,Oleg A. Tretiakov,Dimitrie Culcer,Yu-Jun Zhao,Lan Wang###
(789342, 789342)
 Our workreveals that ferromagnetic heterostructures assembled from vdW materials canexhibit substantially different properties to those exhibited by similarheterostructures grown in vacuum.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Antisymmetric magnetoresistance in van der Waals Fe3GeTe2/graphite/Fe3GeTe2 tri-layer heterostructures|Sultan Albarakati,Cheng Tan,Zhong-Jia Chen,James G. Partridge,Guolin Zheng,Lawrence Farrar,Edwin L. H. Mayes,Matthew R. Field,Changgu Lee,Yihao Wang,Yiming Xiong,Mingliang Tian,Feixiang Xiang,Alex R. Hamilton,Oleg A. Tretiakov,Dimitrie Culcer,Yu-Jun Zhao,Lan Wang###
(789412, 789412)
 Hence, it highlights the potential for newphysics and new spintronic applications to be discovered using vdWheterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Possible Topological Phase Transition in Fe-Vacancy-Ordered $β$-Fe$_{4+δ}$Se$_{5}$ Nanowires|Keng-Yu Yeh,Tung-Sheng Lo,Chung-Chieh Chang,Phillip Wu,Kuei-Shu Chang-Liao,Ming-Jye Wang,Maw-Kuen Wu###
(789436, 789436)
Possible Topological Phase Transition in Fe-Vacancy-Ordered -Fe4Se5 Nanowires.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe4Se5
###Possible Topological Phase Transition in Fe-Vacancy-Ordered $β$-Fe$_{4+δ}$Se$_{5}$ Nanowires|Keng-Yu Yeh,Tung-Sheng Lo,Chung-Chieh Chang,Phillip Wu,Kuei-Shu Chang-Liao,Ming-Jye Wang,Maw-Kuen Wu###
(789443, 789446)
Possible Topological Phase Transition in Fe-Vacancy-Ordered -Fe4Se5 Nanowires.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4444444444444444,0,0,0,0,0,0,0,0.5555555555555556,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe4
###Possible Topological Phase Transition in Fe-Vacancy-Ordered $β$-Fe$_{4+δ}$Se$_{5}$ Nanowires|Keng-Yu Yeh,Tung-Sheng Lo,Chung-Chieh Chang,Phillip Wu,Kuei-Shu Chang-Liao,Ming-Jye Wang,Maw-Kuen Wu###
(789465, 789466)
 We studied the electrical transport on beta-Fe4deltaSe5single-crystal nanowires, exhibiting sqrt5timessqrt5 Fe-vacancy orderand mixed valence of Fe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Se5
###Possible Topological Phase Transition in Fe-Vacancy-Ordered $β$-Fe$_{4+δ}$Se$_{5}$ Nanowires|Keng-Yu Yeh,Tung-Sheng Lo,Chung-Chieh Chang,Phillip Wu,Kuei-Shu Chang-Liao,Ming-Jye Wang,Maw-Kuen Wu###
(789468, 789469)
 We studied the electrical transport on beta-Fe4deltaSe5single-crystal nanowires, exhibiting sqrt5timessqrt5 Fe-vacancy orderand mixed valence of Fe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Possible Topological Phase Transition in Fe-Vacancy-Ordered $β$-Fe$_{4+δ}$Se$_{5}$ Nanowires|Keng-Yu Yeh,Tung-Sheng Lo,Chung-Chieh Chang,Phillip Wu,Kuei-Shu Chang-Liao,Ming-Jye Wang,Maw-Kuen Wu###
(789487, 789487)
 We studied the electrical transport on beta-Fe4deltaSe5single-crystal nanowires, exhibiting sqrt5timessqrt5 Fe-vacancy orderand mixed valence of Fe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Possible Topological Phase Transition in Fe-Vacancy-Ordered $β$-Fe$_{4+δ}$Se$_{5}$ Nanowires|Keng-Yu Yeh,Tung-Sheng Lo,Chung-Chieh Chang,Phillip Wu,Kuei-Shu Chang-Liao,Ming-Jye Wang,Maw-Kuen Wu###
(789502, 789502)
 We studied the electrical transport on beta-Fe4deltaSe5single-crystal nanowires, exhibiting sqrt5timessqrt5 Fe-vacancy orderand mixed valence of Fe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Possible Topological Phase Transition in Fe-Vacancy-Ordered $β$-Fe$_{4+δ}$Se$_{5}$ Nanowires|Keng-Yu Yeh,Tung-Sheng Lo,Chung-Chieh Chang,Phillip Wu,Kuei-Shu Chang-Liao,Ming-Jye Wang,Maw-Kuen Wu###
(789534, 789534)
 We observed a first-order metal-insulator transitionof the transition temperature at sim28K at zero magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Possible Topological Phase Transition in Fe-Vacancy-Ordered $β$-Fe$_{4+δ}$Se$_{5}$ Nanowires|Keng-Yu Yeh,Tung-Sheng Lo,Chung-Chieh Chang,Phillip Wu,Kuei-Shu Chang-Liao,Ming-Jye Wang,Maw-Kuen Wu###
(789580, 789580)
 Thedielectric relaxation reveals that the transition is related to an energy gapexpansion of sim12meV, involving the charge-orbital ordering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Possible Topological Phase Transition in Fe-Vacancy-Ordered $β$-Fe$_{4+δ}$Se$_{5}$ Nanowires|Keng-Yu Yeh,Tung-Sheng Lo,Chung-Chieh Chang,Phillip Wu,Kuei-Shu Chang-Liao,Ming-Jye Wang,Maw-Kuen Wu###
(789594, 789594)
 At nearly28K, colossal positive magnetoresistance emerges, resulting from themagnetic-field dependent shift of the transition temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Possible Topological Phase Transition in Fe-Vacancy-Ordered $β$-Fe$_{4+δ}$Se$_{5}$ Nanowires|Keng-Yu Yeh,Tung-Sheng Lo,Chung-Chieh Chang,Phillip Wu,Kuei-Shu Chang-Liao,Ming-Jye Wang,Maw-Kuen Wu###
(789600, 789600)
 At nearly28K, colossal positive magnetoresistance emerges, resulting from themagnetic-field dependent shift of the transition temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Possible Topological Phase Transition in Fe-Vacancy-Ordered $β$-Fe$_{4+δ}$Se$_{5}$ Nanowires|Keng-Yu Yeh,Tung-Sheng Lo,Chung-Chieh Chang,Phillip Wu,Kuei-Shu Chang-Liao,Ming-Jye Wang,Maw-Kuen Wu###
(789746, 789746)
 Our findings demonstrate the novelmagnetoresistive transition intimating a topological transition in theFe-vacancy-ordered beta-Fe4deltaSe5 nanowires.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe4
###Possible Topological Phase Transition in Fe-Vacancy-Ordered $β$-Fe$_{4+δ}$Se$_{5}$ Nanowires|Keng-Yu Yeh,Tung-Sheng Lo,Chung-Chieh Chang,Phillip Wu,Kuei-Shu Chang-Liao,Ming-Jye Wang,Maw-Kuen Wu###
(789754, 789755)
 Our findings demonstrate the novelmagnetoresistive transition intimating a topological transition in theFe-vacancy-ordered beta-Fe4deltaSe5 nanowires.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Se5
###Possible Topological Phase Transition in Fe-Vacancy-Ordered $β$-Fe$_{4+δ}$Se$_{5}$ Nanowires|Keng-Yu Yeh,Tung-Sheng Lo,Chung-Chieh Chang,Phillip Wu,Kuei-Shu Chang-Liao,Ming-Jye Wang,Maw-Kuen Wu###
(789757, 789758)
 Our findings demonstrate the novelmagnetoresistive transition intimating a topological transition in theFe-vacancy-ordered beta-Fe4deltaSe5 nanowires.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeSe
###Possible Topological Phase Transition in Fe-Vacancy-Ordered $β$-Fe$_{4+δ}$Se$_{5}$ Nanowires|Keng-Yu Yeh,Tung-Sheng Lo,Chung-Chieh Chang,Phillip Wu,Kuei-Shu Chang-Liao,Ming-Jye Wang,Maw-Kuen Wu###
(789799, 789800)
 The resultsprovide valuable information to better understand the orbital nature and theemergence of superconductivity in FeSe-based materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn1
###Observation of a mesoscopic magnetic modulation in chiral Mn1/3NbS2|Sunil K. Karna,F. N. Womack,R. Chapai,D. P. Young,M. Marshall,Weiwei Xie,D. Graf,Yan Wu,Huibo Cao,L. DeBeer-Schmitt,P. W. Adams,R. Jin,J. F. DiTusa###
(789831, 789832)
Observation of a mesoscopic magnetic modulation in chiral Mn1/3NbS2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 45, 'K', 2],[420.0, 20, 'K', 8]

NbS2
###Observation of a mesoscopic magnetic modulation in chiral Mn1/3NbS2|Sunil K. Karna,F. N. Womack,R. Chapai,D. P. Young,M. Marshall,Weiwei Xie,D. Graf,Yan Wu,Huibo Cao,L. DeBeer-Schmitt,P. W. Adams,R. Jin,J. F. DiTusa###
(789835, 789837)
Observation of a mesoscopic magnetic modulation in chiral Mn1/3NbS2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 45, 'K', 2],[415.0, 20, 'K', 8]

Mn1
###Observation of a mesoscopic magnetic modulation in chiral Mn1/3NbS2|Sunil K. Karna,F. N. Womack,R. Chapai,D. P. Young,M. Marshall,Weiwei Xie,D. Graf,Yan Wu,Huibo Cao,L. DeBeer-Schmitt,P. W. Adams,R. Jin,J. F. DiTusa###
(789868, 789869)
 We have investigated the structural, magnetic, thermodynamic, and chargetransport properties of Mn1/3NbS2 single crystals through x<missing VAR>-ray and neutrondiffraction, magnetization, specific heat, magnetoresistance, and Hall effectmeasurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 45, 'K', 1],[383.0, 20, 'K', 7]

NbS2
###Observation of a mesoscopic magnetic modulation in chiral Mn1/3NbS2|Sunil K. Karna,F. N. Womack,R. Chapai,D. P. Young,M. Marshall,Weiwei Xie,D. Graf,Yan Wu,Huibo Cao,L. DeBeer-Schmitt,P. W. Adams,R. Jin,J. F. DiTusa###
(789872, 789874)
 We have investigated the structural, magnetic, thermodynamic, and chargetransport properties of Mn1/3NbS2 single crystals through x<missing VAR>-ray and neutrondiffraction, magnetization, specific heat, magnetoresistance, and Hall effectmeasurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 45, 'K', 1],[378.0, 20, 'K', 7]

Mn1
###Observation of a mesoscopic magnetic modulation in chiral Mn1/3NbS2|Sunil K. Karna,F. N. Womack,R. Chapai,D. P. Young,M. Marshall,Weiwei Xie,D. Graf,Yan Wu,Huibo Cao,L. DeBeer-Schmitt,P. W. Adams,R. Jin,J. F. DiTusa###
(789915, 789916)
 Mn1/3NbS2 displays a magnetic transition at T<missing VAR>C  45 K with highlyanisotropic behavior expected for a hexagonal structured material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 45, 'K', 0],[336.0, 20, 'K', 6]

NbS2
###Observation of a mesoscopic magnetic modulation in chiral Mn1/3NbS2|Sunil K. Karna,F. N. Womack,R. Chapai,D. P. Young,M. Marshall,Weiwei Xie,D. Graf,Yan Wu,Huibo Cao,L. DeBeer-Schmitt,P. W. Adams,R. Jin,J. F. DiTusa###
(789919, 789921)
 Mn1/3NbS2 displays a magnetic transition at T<missing VAR>C  45 K with highlyanisotropic behavior expected for a hexagonal structured material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 45, 'K', 0],[331.0, 20, 'K', 6]

C
###Observation of a mesoscopic magnetic modulation in chiral Mn1/3NbS2|Sunil K. Karna,F. N. Womack,R. Chapai,D. P. Young,M. Marshall,Weiwei Xie,D. Graf,Yan Wu,Huibo Cao,L. DeBeer-Schmitt,P. W. Adams,R. Jin,J. F. DiTusa###
(789934, 789934)
 Mn1/3NbS2 displays a magnetic transition at T<missing VAR>C  45 K with highlyanisotropic behavior expected for a hexagonal structured material.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 45, 'K', 0],[318.0, 20, 'K', 6]

C
###Observation of a mesoscopic magnetic modulation in chiral Mn1/3NbS2|Sunil K. Karna,F. N. Womack,R. Chapai,D. P. Young,M. Marshall,Weiwei Xie,D. Graf,Yan Wu,Huibo Cao,L. DeBeer-Schmitt,P. W. Adams,R. Jin,J. F. DiTusa###
(789963, 789963)
 Below T<missing VAR>C,neutron diffraction reveals increased scattering near the structural Braggpeaks having a wider Q<missing VAR>-dependence along the c<missing VAR>-axis than the nuclear Braggpeaks.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 45, 'K', 1],[289.0, 20, 'K', 5]

Cr1
###Observation of a mesoscopic magnetic modulation in chiral Mn1/3NbS2|Sunil K. Karna,F. N. Womack,R. Chapai,D. P. Young,M. Marshall,Weiwei Xie,D. Graf,Yan Wu,Huibo Cao,L. DeBeer-Schmitt,P. W. Adams,R. Jin,J. F. DiTusa###
(790095, 790096)
 This q<missing VAR> is substantially smallerthan that found for the helimagnetic state in isostructural Cr1/3NbS2 (0.015AA-1).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[159.0, 45, 'K', 3],[156.0, 20, 'K', 3]

NbS2
###Observation of a mesoscopic magnetic modulation in chiral Mn1/3NbS2|Sunil K. Karna,F. N. Womack,R. Chapai,D. P. Young,M. Marshall,Weiwei Xie,D. Graf,Yan Wu,Huibo Cao,L. DeBeer-Schmitt,P. W. Adams,R. Jin,J. F. DiTusa###
(790099, 790101)
 This q<missing VAR> is substantially smallerthan that found for the helimagnetic state in isostructural Cr1/3NbS2 (0.015AA-1).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 45, 'K', 3],[151.0, 20, 'K', 3]

Mn1
###Observation of a mesoscopic magnetic modulation in chiral Mn1/3NbS2|Sunil K. Karna,F. N. Womack,R. Chapai,D. P. Young,M. Marshall,Weiwei Xie,D. Graf,Yan Wu,Huibo Cao,L. DeBeer-Schmitt,P. W. Adams,R. Jin,J. F. DiTusa###
(790329, 790330)
 These observations signify a more complex magneticstructure both at zero and finite fields for Mn1/3NbS2 than for thewell-investigated Cr1/3NbS2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[393.0, 45, 'K', 7],[77.0, 20, 'K', 1]

NbS2
###Observation of a mesoscopic magnetic modulation in chiral Mn1/3NbS2|Sunil K. Karna,F. N. Womack,R. Chapai,D. P. Young,M. Marshall,Weiwei Xie,D. Graf,Yan Wu,Huibo Cao,L. DeBeer-Schmitt,P. W. Adams,R. Jin,J. F. DiTusa###
(790333, 790335)
 These observations signify a more complex magneticstructure both at zero and finite fields for Mn1/3NbS2 than for thewell-investigated Cr1/3NbS2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[397.0, 45, 'K', 7],[81.0, 20, 'K', 1]

Cr1
###Observation of a mesoscopic magnetic modulation in chiral Mn1/3NbS2|Sunil K. Karna,F. N. Womack,R. Chapai,D. P. Young,M. Marshall,Weiwei Xie,D. Graf,Yan Wu,Huibo Cao,L. DeBeer-Schmitt,P. W. Adams,R. Jin,J. F. DiTusa###
(790348, 790349)
 These observations signify a more complex magneticstructure both at zero and finite fields for Mn1/3NbS2 than for thewell-investigated Cr1/3NbS2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[412.0, 45, 'K', 7],[96.0, 20, 'K', 1]

NbS2
###Observation of a mesoscopic magnetic modulation in chiral Mn1/3NbS2|Sunil K. Karna,F. N. Womack,R. Chapai,D. P. Young,M. Marshall,Weiwei Xie,D. Graf,Yan Wu,Huibo Cao,L. DeBeer-Schmitt,P. W. Adams,R. Jin,J. F. DiTusa###
(790352, 790354)
 These observations signify a more complex magneticstructure both at zero and finite fields for Mn1/3NbS2 than for thewell-investigated Cr1/3NbS2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[416.0, 45, 'K', 7],[100.0, 20, 'K', 1]

WTe2
###Direct evidence for charge compensation induced large magnetoresistance in thin WTe2|Yaojia Wang,Lizheng Wang,Xiaowei Liu,Heng Wu,Pengfei Wang,Dayu Yan,Bin Cheng,Youguo Shi,Kenji Watanabe,Takashi Taniguchi,Shi-Jun Liang,Feng Miao###
(790385, 790387)
Direct evidence for charge compensation induced large magnetoresistance in thin WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 10600, '%', 4]

WTe2
###Direct evidence for charge compensation induced large magnetoresistance in thin WTe2|Yaojia Wang,Lizheng Wang,Xiaowei Liu,Heng Wu,Pengfei Wang,Dayu Yan,Bin Cheng,Youguo Shi,Kenji Watanabe,Takashi Taniguchi,Shi-Jun Liang,Feng Miao###
(790416, 790418)
 Since the discovery of extremely large non-saturating magnetoresistance (MR)in WTe2, much effort has been devoted to understanding the underlyingmechanism, which is still under debate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 10600, '%', 3]

WTe2
###Direct evidence for charge compensation induced large magnetoresistance in thin WTe2|Yaojia Wang,Lizheng Wang,Xiaowei Liu,Heng Wu,Pengfei Wang,Dayu Yan,Bin Cheng,Youguo Shi,Kenji Watanabe,Takashi Taniguchi,Shi-Jun Liang,Feng Miao###
(790508, 790510)
 Here, we explicitly identify thedominant physical origin of the large non-saturating MR through in-situ tuningof the magneto-transport properties in thin WTe2 film.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 10600, '%', 2]

WTe2
###Direct evidence for charge compensation induced large magnetoresistance in thin WTe2|Yaojia Wang,Lizheng Wang,Xiaowei Liu,Heng Wu,Pengfei Wang,Dayu Yan,Bin Cheng,Youguo Shi,Kenji Watanabe,Takashi Taniguchi,Shi-Jun Liang,Feng Miao###
(790570, 790572)
 The MRreaches a maximum (10600%) in thin WTe2 film at certain gate voltage whereelectron and hole concentrations are balanced, indicating that the chargecompensation is the dominant mechanism of the observed large MR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 10600, '%', 0]

As
###Anomalous conductance scaling in strained Weyl semimetals|Jan Behrends,Roni Ilan,Jens H. Bardarson###
(790914, 790914)
 Asrecently realized, these axial fields can be achieved by straining samples oradding inhomogeneities to them.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Anomalous conductance scaling in strained Weyl semimetals|Jan Behrends,Roni Ilan,Jens H. Bardarson###
(790998, 790998)
 In particular, we demonstrate that the longitudinalconductivity in the ultraquantum regime of a disordered Weyl semimetalsubjected to an axial magnetic field increases with both the field strength andsample width due to a spatial separation of charge carriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

UTeS
###Novel universality class for the ferromagnetic transition in the low carrier concentration systems UTeS and USeS exhibiting large negative magnetoresistance|Naoyuki Tateiwa,Yoshinori Haga,Hironori Sakai,Etsuji Yamamoto###
(792158, 792160)
Novel universality class for the ferromagnetic transition in the low carrier concentration systems UTeS and USeS exhibiting large negative magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[80.0, 85, 'and', 1],[454.0, 5, 'f', 8],[490.0, 5, 'f', 8]

USeS
###Novel universality class for the ferromagnetic transition in the low carrier concentration systems UTeS and USeS exhibiting large negative magnetoresistance|Naoyuki Tateiwa,Yoshinori Haga,Hironori Sakai,Etsuji Yamamoto###
(792164, 792166)
Novel universality class for the ferromagnetic transition in the low carrier concentration systems UTeS and USeS exhibiting large negative magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[74.0, 85, 'and', 1],[448.0, 5, 'f', 8],[484.0, 5, 'f', 8]

UTeS
###Novel universality class for the ferromagnetic transition in the low carrier concentration systems UTeS and USeS exhibiting large negative magnetoresistance|Naoyuki Tateiwa,Yoshinori Haga,Hironori Sakai,Etsuji Yamamoto###
(792204, 792206)
 We report the novel critical behavior of magnetization in low carrierconcentration systems UTeS and USeS that exhibit the large negativemagnetoresistance around the ferromagnetic transition temperatures T<missing VAR>C  85 and23 K, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[34.0, 85, 'and', 0],[408.0, 5, 'f', 7],[444.0, 5, 'f', 7]

USeS
###Novel universality class for the ferromagnetic transition in the low carrier concentration systems UTeS and USeS exhibiting large negative magnetoresistance|Naoyuki Tateiwa,Yoshinori Haga,Hironori Sakai,Etsuji Yamamoto###
(792210, 792212)
 We report the novel critical behavior of magnetization in low carrierconcentration systems UTeS and USeS that exhibit the large negativemagnetoresistance around the ferromagnetic transition temperatures T<missing VAR>C  85 and23 K, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[28.0, 85, 'and', 0],[402.0, 5, 'f', 7],[438.0, 5, 'f', 7]

C
###Novel universality class for the ferromagnetic transition in the low carrier concentration systems UTeS and USeS exhibiting large negative magnetoresistance|Naoyuki Tateiwa,Yoshinori Haga,Hironori Sakai,Etsuji Yamamoto###
(792238, 792238)
 We report the novel critical behavior of magnetization in low carrierconcentration systems UTeS and USeS that exhibit the large negativemagnetoresistance around the ferromagnetic transition temperatures T<missing VAR>C  85 and23 K, respectively.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 85, 'and', 0],[376.0, 5, 'f', 7],[412.0, 5, 'f', 7]

K
###Novel universality class for the ferromagnetic transition in the low carrier concentration systems UTeS and USeS exhibiting large negative magnetoresistance|Naoyuki Tateiwa,Yoshinori Haga,Hironori Sakai,Etsuji Yamamoto###
(792245, 792245)
 We report the novel critical behavior of magnetization in low carrierconcentration systems UTeS and USeS that exhibit the large negativemagnetoresistance around the ferromagnetic transition temperatures T<missing VAR>C  85 and23 K, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 85, 'and', 0],[369.0, 5, 'f', 7],[405.0, 5, 'f', 7]

UTeS
###Novel universality class for the ferromagnetic transition in the low carrier concentration systems UTeS and USeS exhibiting large negative magnetoresistance|Naoyuki Tateiwa,Yoshinori Haga,Hironori Sakai,Etsuji Yamamoto###
(792251, 792253)
 UTeS and USeS crystallize in the same orthorhombicTiNiSi-type crystal structure as those of uranium ferromagnetic superconductorsURhGe and UCoGe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[11.0, 85, 'and', 1],[361.0, 5, 'f', 6],[397.0, 5, 'f', 6]

USeS
###Novel universality class for the ferromagnetic transition in the low carrier concentration systems UTeS and USeS exhibiting large negative magnetoresistance|Naoyuki Tateiwa,Yoshinori Haga,Hironori Sakai,Etsuji Yamamoto###
(792257, 792259)
 UTeS and USeS crystallize in the same orthorhombicTiNiSi-type crystal structure as those of uranium ferromagnetic superconductorsURhGe and UCoGe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[17.0, 85, 'and', 1],[355.0, 5, 'f', 6],[391.0, 5, 'f', 6]

TiNiSi
###Novel universality class for the ferromagnetic transition in the low carrier concentration systems UTeS and USeS exhibiting large negative magnetoresistance|Naoyuki Tateiwa,Yoshinori Haga,Hironori Sakai,Etsuji Yamamoto###
(792272, 792274)
 UTeS and USeS crystallize in the same orthorhombicTiNiSi-type crystal structure as those of uranium ferromagnetic superconductorsURhGe and UCoGe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 85, 'and', 1],[340.0, 5, 'f', 6],[376.0, 5, 'f', 6]

URhGe
###Novel universality class for the ferromagnetic transition in the low carrier concentration systems UTeS and USeS exhibiting large negative magnetoresistance|Naoyuki Tateiwa,Yoshinori Haga,Hironori Sakai,Etsuji Yamamoto###
(792295, 792297)
 UTeS and USeS crystallize in the same orthorhombicTiNiSi-type crystal structure as those of uranium ferromagnetic superconductorsURhGe and UCoGe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[55.0, 85, 'and', 1],[317.0, 5, 'f', 6],[353.0, 5, 'f', 6]

UCoGe
###Novel universality class for the ferromagnetic transition in the low carrier concentration systems UTeS and USeS exhibiting large negative magnetoresistance|Naoyuki Tateiwa,Yoshinori Haga,Hironori Sakai,Etsuji Yamamoto###
(792301, 792303)
 UTeS and USeS crystallize in the same orthorhombicTiNiSi-type crystal structure as those of uranium ferromagnetic superconductorsURhGe and UCoGe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[61.0, 85, 'and', 1],[311.0, 5, 'f', 6],[347.0, 5, 'f', 6]

C
###Novel universality class for the ferromagnetic transition in the low carrier concentration systems UTeS and USeS exhibiting large negative magnetoresistance|Naoyuki Tateiwa,Yoshinori Haga,Hironori Sakai,Etsuji Yamamoto###
(792361, 792361)
 We determine the critical exponents, beta for the spontaneousmagnetization Ms, gamma for the magnetic susceptibility chi, and delta for themagnetization isotherm at T<missing VAR>C with several methods.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 85, 'and', 2],[253.0, 5, 'f', 5],[289.0, 5, 'f', 5]

UTeS
###Novel universality class for the ferromagnetic transition in the low carrier concentration systems UTeS and USeS exhibiting large negative magnetoresistance|Naoyuki Tateiwa,Yoshinori Haga,Hironori Sakai,Etsuji Yamamoto###
(792379, 792381)
 The ferromagnetic states inUTeS and USeS have strong uniaxial magnetic anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[139.0, 85, 'and', 3],[233.0, 5, 'f', 4],[269.0, 5, 'f', 4]

USeS
###Novel universality class for the ferromagnetic transition in the low carrier concentration systems UTeS and USeS exhibiting large negative magnetoresistance|Naoyuki Tateiwa,Yoshinori Haga,Hironori Sakai,Etsuji Yamamoto###
(792385, 792387)
 The ferromagnetic states inUTeS and USeS have strong uniaxial magnetic anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[145.0, 85, 'and', 3],[227.0, 5, 'f', 4],[263.0, 5, 'f', 4]

UGe2
###Novel universality class for the ferromagnetic transition in the low carrier concentration systems UTeS and USeS exhibiting large negative magnetoresistance|Naoyuki Tateiwa,Yoshinori Haga,Hironori Sakai,Etsuji Yamamoto###
(792482, 792484)
Similar sets of the critical exponents have been reported for the uraniumferromagnetic superconductors UGe2 and URhGe, and uranium intermetallicferromagnets URhSi, UIr and U(Co0.98Os0.02)Al.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[242.0, 85, 'and', 5],[130.0, 5, 'f', 2],[166.0, 5, 'f', 2]

URhGe
###Novel universality class for the ferromagnetic transition in the low carrier concentration systems UTeS and USeS exhibiting large negative magnetoresistance|Naoyuki Tateiwa,Yoshinori Haga,Hironori Sakai,Etsuji Yamamoto###
(792488, 792490)
Similar sets of the critical exponents have been reported for the uraniumferromagnetic superconductors UGe2 and URhGe, and uranium intermetallicferromagnets URhSi, UIr and U(Co0.98Os0.02)Al.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[248.0, 85, 'and', 5],[124.0, 5, 'f', 2],[160.0, 5, 'f', 2]

URhSi
###Novel universality class for the ferromagnetic transition in the low carrier concentration systems UTeS and USeS exhibiting large negative magnetoresistance|Naoyuki Tateiwa,Yoshinori Haga,Hironori Sakai,Etsuji Yamamoto###
(792502, 792504)
Similar sets of the critical exponents have been reported for the uraniumferromagnetic superconductors UGe2 and URhGe, and uranium intermetallicferromagnets URhSi, UIr and U(Co0.98Os0.02)Al.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[262.0, 85, 'and', 5],[110.0, 5, 'f', 2],[146.0, 5, 'f', 2]

UIr
###Novel universality class for the ferromagnetic transition in the low carrier concentration systems UTeS and USeS exhibiting large negative magnetoresistance|Naoyuki Tateiwa,Yoshinori Haga,Hironori Sakai,Etsuji Yamamoto###
(792507, 792508)
Similar sets of the critical exponents have been reported for the uraniumferromagnetic superconductors UGe2 and URhGe, and uranium intermetallicferromagnets URhSi, UIr and U(Co0.98Os0.02)Al.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
[267.0, 85, 'and', 5],[106.0, 5, 'f', 2],[142.0, 5, 'f', 2]

U(Co0.98Os0.02)Al
###Novel universality class for the ferromagnetic transition in the low carrier concentration systems UTeS and USeS exhibiting large negative magnetoresistance|Naoyuki Tateiwa,Yoshinori Haga,Hironori Sakai,Etsuji Yamamoto###
(792512, 792519)
Similar sets of the critical exponents have been reported for the uraniumferromagnetic superconductors UGe2 and URhGe, and uranium intermetallicferromagnets URhSi, UIr and U(Co0.98Os0.02)Al.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0.32666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.006666666666666667,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[272.0, 85, 'and', 5],[95.0, 5, 'f', 2],[131.0, 5, 'f', 2]

UTeS
###Novel universality class for the ferromagnetic transition in the low carrier concentration systems UTeS and USeS exhibiting large negative magnetoresistance|Naoyuki Tateiwa,Yoshinori Haga,Hironori Sakai,Etsuji Yamamoto###
(792539, 792541)
 The universality class of theferromagnetic transitions in UTeS and USeS may belong to the same one for theuranium compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[299.0, 85, 'and', 6],[73.0, 5, 'f', 1],[109.0, 5, 'f', 1]

USeS
###Novel universality class for the ferromagnetic transition in the low carrier concentration systems UTeS and USeS exhibiting large negative magnetoresistance|Naoyuki Tateiwa,Yoshinori Haga,Hironori Sakai,Etsuji Yamamoto###
(792545, 792547)
 The universality class of theferromagnetic transitions in UTeS and USeS may belong to the same one for theuranium compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[305.0, 85, 'and', 6],[67.0, 5, 'f', 1],[103.0, 5, 'f', 1]

UTeS
###Novel universality class for the ferromagnetic transition in the low carrier concentration systems UTeS and USeS exhibiting large negative magnetoresistance|Naoyuki Tateiwa,Yoshinori Haga,Hironori Sakai,Etsuji Yamamoto###
(792635, 792637)
 The novel critical phenomenon associated with theferromagnetic transition is observed not only in the uranium intermetallicferromagnets with the itinerant 5f electrons but also in the low carrierconcentration systems UTeS and USeS with the localized 5f electrons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[395.0, 85, 'and', 7],[21.0, 5, 'f', 0],[13.0, 5, 'f', 0]

USeS
###Novel universality class for the ferromagnetic transition in the low carrier concentration systems UTeS and USeS exhibiting large negative magnetoresistance|Naoyuki Tateiwa,Yoshinori Haga,Hironori Sakai,Etsuji Yamamoto###
(792641, 792643)
 The novel critical phenomenon associated with theferromagnetic transition is observed not only in the uranium intermetallicferromagnets with the itinerant 5f electrons but also in the low carrierconcentration systems UTeS and USeS with the localized 5f electrons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[401.0, 85, 'and', 7],[27.0, 5, 'f', 0],[7.0, 5, 'f', 0]

UTeS
###Novel universality class for the ferromagnetic transition in the low carrier concentration systems UTeS and USeS exhibiting large negative magnetoresistance|Naoyuki Tateiwa,Yoshinori Haga,Hironori Sakai,Etsuji Yamamoto###
(792666, 792668)
 The largenegative magnetoresistance in UTeS and USeS, and the superconductivity in UGe2and URhGe share the similarity of their closeness to the ferromagnetismcharacterized by the novel critical exponents.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[426.0, 85, 'and', 8],[52.0, 5, 'f', 1],[16.0, 5, 'f', 1]

USeS
###Novel universality class for the ferromagnetic transition in the low carrier concentration systems UTeS and USeS exhibiting large negative magnetoresistance|Naoyuki Tateiwa,Yoshinori Haga,Hironori Sakai,Etsuji Yamamoto###
(792672, 792674)
 The largenegative magnetoresistance in UTeS and USeS, and the superconductivity in UGe2and URhGe share the similarity of their closeness to the ferromagnetismcharacterized by the novel critical exponents.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[432.0, 85, 'and', 8],[58.0, 5, 'f', 1],[22.0, 5, 'f', 1]

UGe2
###Novel universality class for the ferromagnetic transition in the low carrier concentration systems UTeS and USeS exhibiting large negative magnetoresistance|Naoyuki Tateiwa,Yoshinori Haga,Hironori Sakai,Etsuji Yamamoto###
(792685, 792687)
 The largenegative magnetoresistance in UTeS and USeS, and the superconductivity in UGe2and URhGe share the similarity of their closeness to the ferromagnetismcharacterized by the novel critical exponents.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[445.0, 85, 'and', 8],[71.0, 5, 'f', 1],[35.0, 5, 'f', 1]

URhGe
###Novel universality class for the ferromagnetic transition in the low carrier concentration systems UTeS and USeS exhibiting large negative magnetoresistance|Naoyuki Tateiwa,Yoshinori Haga,Hironori Sakai,Etsuji Yamamoto###
(792692, 792694)
 The largenegative magnetoresistance in UTeS and USeS, and the superconductivity in UGe2and URhGe share the similarity of their closeness to the ferromagnetismcharacterized by the novel critical exponents.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[452.0, 85, 'and', 8],[78.0, 5, 'f', 1],[42.0, 5, 'f', 1]

F
###Giant magnetoresistance amplifier for spin-orbit torque nano-oscillators|Jen-Ru Chen,Andrew Smith,Eric A. Montoya,Jia G. Lu,Ilya N. Krivorotov###
(792776, 792776)
 Spin-orbit torque nano-oscillators based on bilayers of ferromagnetic (FM)and nonmagnetic (NM) metals are ultra-compact current-controlled microwavesignal sources.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Giant magnetoresistance amplifier for spin-orbit torque nano-oscillators|Jen-Ru Chen,Andrew Smith,Eric A. Montoya,Jia G. Lu,Ilya N. Krivorotov###
(792786, 792786)
 Spin-orbit torque nano-oscillators based on bilayers of ferromagnetic (FM)and nonmagnetic (NM) metals are ultra-compact current-controlled microwavesignal sources.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Giant magnetoresistance amplifier for spin-orbit torque nano-oscillators|Jen-Ru Chen,Andrew Smith,Eric A. Montoya,Jia G. Lu,Ilya N. Krivorotov###
(792933, 792933)
 However, a major drawback of these devices is low outputmicrowave power arising from the relatively small anisotropic magnetoresistance(AMR) of the FM<missing VAR> layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Giant magnetoresistance amplifier for spin-orbit torque nano-oscillators|Jen-Ru Chen,Andrew Smith,Eric A. Montoya,Jia G. Lu,Ilya N. Krivorotov###
(793006, 793006)
 Addition of a FM<missing VAR>reference layer to the oscillator allows us to employ current-in-plane giantmagnetoresistance (CIP GMR) to boost the output power of the device.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CIP
###Giant magnetoresistance amplifier for spin-orbit torque nano-oscillators|Jen-Ru Chen,Andrew Smith,Eric A. Montoya,Jia G. Lu,Ilya N. Krivorotov###
(793040, 793042)
 Addition of a FM<missing VAR>reference layer to the oscillator allows us to employ current-in-plane giantmagnetoresistance (CIP GMR) to boost the output power of the device.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CaAgBi
###Weak antilocalization in a noncentrosymmetric CaAgBi single crystal|Souvik Sasmal,Rajib Mondal,Ruta Kulkarni,Bahadur Singh,A. Thamizhavel###
(793182, 793184)
Weak antilocalization in a noncentrosymmetric CaAgBi single crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[171.0, 10, 'K', 3],[185.0, 14, 'T', 3],[238.0, 100, 'K', 4],[280.0, 14, 'T', 5]

CaAgBi
###Weak antilocalization in a noncentrosymmetric CaAgBi single crystal|Souvik Sasmal,Rajib Mondal,Ruta Kulkarni,Bahadur Singh,A. Thamizhavel###
(793220, 793222)
 We report on the single crystal growth and transport properties of atopological semimetal CaAgBi which crystallises in the hexagonal ABC-typestructure with the non-centrosymmetric space group mathitP63mc (No.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 10, 'K', 2],[147.0, 14, 'T', 2],[200.0, 100, 'K', 3],[242.0, 14, 'T', 4]

BC
###Weak antilocalization in a noncentrosymmetric CaAgBi single crystal|Souvik Sasmal,Rajib Mondal,Ruta Kulkarni,Bahadur Singh,A. Thamizhavel###
(793235, 793236)
 We report on the single crystal growth and transport properties of atopological semimetal CaAgBi which crystallises in the hexagonal ABC-typestructure with the non-centrosymmetric space group mathitP63mc (No.
Featurization terminated normally.
0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 10, 'K', 2],[133.0, 14, 'T', 2],[186.0, 100, 'K', 3],[228.0, 14, 'T', 4]

P63
###Weak antilocalization in a noncentrosymmetric CaAgBi single crystal|Souvik Sasmal,Rajib Mondal,Ruta Kulkarni,Bahadur Singh,A. Thamizhavel###
(793256, 793258)
 We report on the single crystal growth and transport properties of atopological semimetal CaAgBi which crystallises in the hexagonal ABC-typestructure with the non-centrosymmetric space group mathitP63mc (No.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 10, 'K', 2],[111.0, 14, 'T', 2],[164.0, 100, 'K', 3],[206.0, 14, 'T', 4]

No
###Weak antilocalization in a noncentrosymmetric CaAgBi single crystal|Souvik Sasmal,Rajib Mondal,Ruta Kulkarni,Bahadur Singh,A. Thamizhavel###
(793262, 793262)
 We report on the single crystal growth and transport properties of atopological semimetal CaAgBi which crystallises in the hexagonal ABC-typestructure with the non-centrosymmetric space group mathitP63mc (No.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0
[93.0, 10, 'K', 2],[107.0, 14, 'T', 2],[160.0, 100, 'K', 3],[202.0, 14, 'T', 4]

I
###Weak antilocalization in a noncentrosymmetric CaAgBi single crystal|Souvik Sasmal,Rajib Mondal,Ruta Kulkarni,Bahadur Singh,A. Thamizhavel###
(793317, 793317)
The transverse magnetoresistance measurements with current in the basal planeof the hexagonal crystal structure reveal a value of about 30 % for I //[10-10] direction and about 50 % for I // [1-210] direction at 10 K in anapplied magnetic field of 14 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 10, 'K', 0],[52.0, 14, 'T', 0],[105.0, 100, 'K', 1],[147.0, 14, 'T', 2]

I
###Weak antilocalization in a noncentrosymmetric CaAgBi single crystal|Souvik Sasmal,Rajib Mondal,Ruta Kulkarni,Bahadur Singh,A. Thamizhavel###
(793341, 793341)
The transverse magnetoresistance measurements with current in the basal planeof the hexagonal crystal structure reveal a value of about 30 % for I //[10-10] direction and about 50 % for I // [1-210] direction at 10 K in anapplied magnetic field of 14 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 10, 'K', 0],[28.0, 14, 'T', 0],[81.0, 100, 'K', 1],[123.0, 14, 'T', 2]

CaAgBi
###Weak antilocalization in a noncentrosymmetric CaAgBi single crystal|Souvik Sasmal,Rajib Mondal,Ruta Kulkarni,Bahadur Singh,A. Thamizhavel###
(793494, 793496)
 The magnetoconductance of CaAgBi is analysed based on the modifiedHikami-Larkin-Nagaoka (HL<missing VAR>N) model.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 10, 'K', 3],[125.0, 14, 'T', 3],[72.0, 100, 'K', 2],[30.0, 14, 'T', 1]

H
###Weak antilocalization in a noncentrosymmetric CaAgBi single crystal|Souvik Sasmal,Rajib Mondal,Ruta Kulkarni,Bahadur Singh,A. Thamizhavel###
(793518, 793518)
 The magnetoconductance of CaAgBi is analysed based on the modifiedHikami-Larkin-Nagaoka (HL<missing VAR>N) model.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 10, 'K', 3],[149.0, 14, 'T', 3],[96.0, 100, 'K', 2],[54.0, 14, 'T', 1]

N
###Weak antilocalization in a noncentrosymmetric CaAgBi single crystal|Souvik Sasmal,Rajib Mondal,Ruta Kulkarni,Bahadur Singh,A. Thamizhavel###
(793520, 793520)
 The magnetoconductance of CaAgBi is analysed based on the modifiedHikami-Larkin-Nagaoka (HL<missing VAR>N) model.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 10, 'K', 3],[151.0, 14, 'T', 3],[98.0, 100, 'K', 2],[56.0, 14, 'T', 1]

CaAgBi
###Weak antilocalization in a noncentrosymmetric CaAgBi single crystal|Souvik Sasmal,Rajib Mondal,Ruta Kulkarni,Bahadur Singh,A. Thamizhavel###
(793551, 793553)
 Our first-principles calculations within adensity-functional theory framework reveal that CaAgBi supports a topologicalDirac semimetal state with Dirac points located on the rotational axis slightlyabove the Fermi level and are protected by C6v<missing VAR> point-group symmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[196.0, 10, 'K', 4],[182.0, 14, 'T', 4],[129.0, 100, 'K', 3],[87.0, 14, 'T', 2]

C6
###Weak antilocalization in a noncentrosymmetric CaAgBi single crystal|Souvik Sasmal,Rajib Mondal,Ruta Kulkarni,Bahadur Singh,A. Thamizhavel###
(793603, 793604)
 Our first-principles calculations within adensity-functional theory framework reveal that CaAgBi supports a topologicalDirac semimetal state with Dirac points located on the rotational axis slightlyabove the Fermi level and are protected by C6v<missing VAR> point-group symmetry.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[248.0, 10, 'K', 4],[234.0, 14, 'T', 4],[181.0, 100, 'K', 3],[139.0, 14, 'T', 2]

CrI3
###Role of quantum confinement and interlayer coupling in CrI$_3$-graphene magnetic tunnel junctions|Jonathan J. Heath,Marcio Costa,Marco Buongiorno-Nardelli,Marcelo A. Kuroda###
(793714, 793716)
Role of quantum confinement and interlayer coupling in CrI3-graphene magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Role of quantum confinement and interlayer coupling in CrI$_3$-graphene magnetic tunnel junctions|Jonathan J. Heath,Marcio Costa,Marco Buongiorno-Nardelli,Marcelo A. Kuroda###
(793770, 793770)
 In order to control and enhance the related physical phenomena,quantitative descriptions linking experimental observations to atomic detailsmust be produced.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CrI3
###Role of quantum confinement and interlayer coupling in CrI$_3$-graphene magnetic tunnel junctions|Jonathan J. Heath,Marcio Costa,Marco Buongiorno-Nardelli,Marcelo A. Kuroda###
(793872, 793874)
 Here we combine first principles and quantum ballistictransport calculations to shed important insights from an atomistic viewpointon the underlying mechanisms governing spin transport in graphene/CrI3junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magnetoresistance from time-reversal symmetry breaking in topological materials|J. C. de Boer,D. P. Leusink,A. Brinkman###
(794600, 794600)
 In this work, we focus on the effects of magnetic fields ontopological materials through a Zeeman term included in the model Hamiltonian.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[195.0, 2, 'D', 3],[198.0, 3, 'D', 3],[210.0, 2, 'D', 3],[233.0, 3, 'D', 3],[248.0, 2, 'D', 3],[261.0, 3, 'D', 3]

As
###Magnetoresistance from time-reversal symmetry breaking in topological materials|J. C. de Boer,D. P. Leusink,A. Brinkman###
(794893, 794893)
 As this magnetoresistance effect is stronglydependent on the spin-orbit energy, it can be used as a telltale sign of aFermi energy located close to the Dirac point.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 2, 'D', 1],[95.0, 3, 'D', 1],[83.0, 2, 'D', 1],[60.0, 3, 'D', 1],[45.0, 2, 'D', 1],[32.0, 3, 'D', 1]

In
###Noncollinear Spintronics and Electric-Field Control: A Review|Peixin Qin,Han Yan,Xiaoning Wang,Zexin Feng,Huixin Guo,Xiaorong Zhou,Haojiang Wu,Xin Zhang,Zhaoguogang Leng,Hongyu Chen,Zhiqi Liu###
(795107, 795107)
 In this Review, wefirstly introduce two types noncollinear spin structures, i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Noncollinear Spintronics and Electric-Field Control: A Review|Peixin Qin,Han Yan,Xiaoning Wang,Zexin Feng,Huixin Guo,Xiaorong Zhou,Haojiang Wu,Xin Zhang,Zhaoguogang Leng,Hongyu Chen,Zhiqi Liu###
(795324, 795324)
 In the final outlook part,we emphasize the importance and possible routes for experimentally detectingthe intriguing theoretically predicted spin-polarized current, verifying thespin Hall effect in the absence of spin-orbit coupling and exploring theanisotropic magnetoresistance and domain-wall-related magnetoresistance effectsfor noncollinear antiferromagnetic materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Y1-xPr
###Magnetic and transport properties in pyrochlore iridates (Y$_{1-x}$Pr$_x$)$_2$Ir$_2$O$_7$: The role of $f$-$d$ exchange interaction and $d$-$p$ orbital hybridization|Harish Kumar,K. C. Kharkwal,Kranti Kumar,K. Asokan,A. Banerjee,A. K. Pramanik###
(795453, 795457)
Magnetic and transport properties in pyrochlore iridates (Y1-xPrx)2Ir2O7 The role of f-d exchange interaction and d-p orbital hybridization.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[365.0, 0.8, 'sample', 7]

Ir2O7
###Magnetic and transport properties in pyrochlore iridates (Y$_{1-x}$Pr$_x$)$_2$Ir$_2$O$_7$: The role of $f$-$d$ exchange interaction and $d$-$p$ orbital hybridization|Harish Kumar,K. C. Kharkwal,Kranti Kumar,K. Asokan,A. Banerjee,A. K. Pramanik###
(795461, 795464)
Magnetic and transport properties in pyrochlore iridates (Y1-xPrx)2Ir2O7 The role of f-d exchange interaction and d-p orbital hybridization.
Featurization terminated normally.
0,0,0,0,0,0,0,0.7777777777777778,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[358.0, 0.8, 'sample', 7]

Y1-xPr
###Magnetic and transport properties in pyrochlore iridates (Y$_{1-x}$Pr$_x$)$_2$Ir$_2$O$_7$: The role of $f$-$d$ exchange interaction and $d$-$p$ orbital hybridization|Harish Kumar,K. C. Kharkwal,Kranti Kumar,K. Asokan,A. Banerjee,A. K. Pramanik###
(795573, 795577)
 Here, wehave investigated the evolution of structural, magnetic and electronicproperties in doped pyrochlore iridate, (Y1-xPrx)2Ir2O7.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[245.0, 0.8, 'sample', 5]

Ir2O7
###Magnetic and transport properties in pyrochlore iridates (Y$_{1-x}$Pr$_x$)$_2$Ir$_2$O$_7$: The role of $f$-$d$ exchange interaction and $d$-$p$ orbital hybridization|Harish Kumar,K. C. Kharkwal,Kranti Kumar,K. Asokan,A. Banerjee,A. K. Pramanik###
(795581, 795584)
 Here, wehave investigated the evolution of structural, magnetic and electronicproperties in doped pyrochlore iridate, (Y1-xPrx)2Ir2O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0.7777777777777778,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[238.0, 0.8, 'sample', 5]

Pr3
###Magnetic and transport properties in pyrochlore iridates (Y$_{1-x}$Pr$_x$)$_2$Ir$_2$O$_7$: The role of $f$-$d$ exchange interaction and $d$-$p$ orbital hybridization|Harish Kumar,K. C. Kharkwal,Kranti Kumar,K. Asokan,A. Banerjee,A. K. Pramanik###
(795629, 795630)
 The substitution of Pr3 (4f<missing VAR>2) for thenonmagnetic Y3 (4d<missing VAR>0) acts as a magnetic doping, which provides anideal platform to study f-d exchange interaction without altering theIr-sublattice.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[192.0, 0.8, 'sample', 3]

Y3
###Magnetic and transport properties in pyrochlore iridates (Y$_{1-x}$Pr$_x$)$_2$Ir$_2$O$_7$: The role of $f$-$d$ exchange interaction and $d$-$p$ orbital hybridization|Harish Kumar,K. C. Kharkwal,Kranti Kumar,K. Asokan,A. Banerjee,A. K. Pramanik###
(795645, 795646)
 The substitution of Pr3 (4f<missing VAR>2) for thenonmagnetic Y3 (4d<missing VAR>0) acts as a magnetic doping, which provides anideal platform to study f-d exchange interaction without altering theIr-sublattice.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[176.0, 0.8, 'sample', 3]

Ir
###Magnetic and transport properties in pyrochlore iridates (Y$_{1-x}$Pr$_x$)$_2$Ir$_2$O$_7$: The role of $f$-$d$ exchange interaction and $d$-$p$ orbital hybridization|Harish Kumar,K. C. Kharkwal,Kranti Kumar,K. Asokan,A. Banerjee,A. K. Pramanik###
(795695, 795695)
 The substitution of Pr3 (4f<missing VAR>2) for thenonmagnetic Y3 (4d<missing VAR>0) acts as a magnetic doping, which provides anideal platform to study f-d exchange interaction without altering theIr-sublattice.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 0.8, 'sample', 3]

Pr
###Magnetic and transport properties in pyrochlore iridates (Y$_{1-x}$Pr$_x$)$_2$Ir$_2$O$_7$: The role of $f$-$d$ exchange interaction and $d$-$p$ orbital hybridization|Harish Kumar,K. C. Kharkwal,Kranti Kumar,K. Asokan,A. Banerjee,A. K. Pramanik###
(795702, 795702)
 With Pr substitution, system retains its original cubicstructural symmetry but the local structural parameters show an evolution withthe doping concentration x<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 0.8, 'sample', 2]

Y2Ir2O7
###Magnetic and transport properties in pyrochlore iridates (Y$_{1-x}$Pr$_x$)$_2$Ir$_2$O$_7$: The role of $f$-$d$ exchange interaction and $d$-$p$ orbital hybridization|Harish Kumar,K. C. Kharkwal,Kranti Kumar,K. Asokan,A. Banerjee,A. K. Pramanik###
(795763, 795768)
 The robust magnetic-insulating state inY2Ir2O7 is drastically weakened, while Pr2Ir2O7 (x<missing VAR>  1.0)shows a paramagnetic-metallic behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6363636363636364,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 0.8, 'sample', 1]

Pr2Ir2O7
###Magnetic and transport properties in pyrochlore iridates (Y$_{1-x}$Pr$_x$)$_2$Ir$_2$O$_7$: The role of $f$-$d$ exchange interaction and $d$-$p$ orbital hybridization|Harish Kumar,K. C. Kharkwal,Kranti Kumar,K. Asokan,A. Banerjee,A. K. Pramanik###
(795779, 795784)
 The robust magnetic-insulating state inY2Ir2O7 is drastically weakened, while Pr2Ir2O7 (x<missing VAR>  1.0)shows a paramagnetic-metallic behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6363636363636364,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 0.8, 'sample', 1]

Pr
###Magnetic and transport properties in pyrochlore iridates (Y$_{1-x}$Pr$_x$)$_2$Ir$_2$O$_7$: The role of $f$-$d$ exchange interaction and $d$-$p$ orbital hybridization|Harish Kumar,K. C. Kharkwal,Kranti Kumar,K. Asokan,A. Banerjee,A. K. Pramanik###
(795863, 795863)
 This evolution of magnetic and electronicproperties are believed to be induced by an exchange interaction betweenlocalized Pr-4f<missing VAR> and itinerant Ir-5d<missing VAR> electrons as well as by an increasedhybridization between Ir-t2g and (basal) O-p<missing VAR> orbitals as observed in X<missing VAR>ASstudy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 0.8, 'sample', 1]

Ir
###Magnetic and transport properties in pyrochlore iridates (Y$_{1-x}$Pr$_x$)$_2$Ir$_2$O$_7$: The role of $f$-$d$ exchange interaction and $d$-$p$ orbital hybridization|Harish Kumar,K. C. Kharkwal,Kranti Kumar,K. Asokan,A. Banerjee,A. K. Pramanik###
(795872, 795872)
 This evolution of magnetic and electronicproperties are believed to be induced by an exchange interaction betweenlocalized Pr-4f<missing VAR> and itinerant Ir-5d<missing VAR> electrons as well as by an increasedhybridization between Ir-t2g and (basal) O-p<missing VAR> orbitals as observed in X<missing VAR>ASstudy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 0.8, 'sample', 1]

Ir
###Magnetic and transport properties in pyrochlore iridates (Y$_{1-x}$Pr$_x$)$_2$Ir$_2$O$_7$: The role of $f$-$d$ exchange interaction and $d$-$p$ orbital hybridization|Harish Kumar,K. C. Kharkwal,Kranti Kumar,K. Asokan,A. Banerjee,A. K. Pramanik###
(795896, 795896)
 This evolution of magnetic and electronicproperties are believed to be induced by an exchange interaction betweenlocalized Pr-4f<missing VAR> and itinerant Ir-5d<missing VAR> electrons as well as by an increasedhybridization between Ir-t2g and (basal) O-p<missing VAR> orbitals as observed in X<missing VAR>ASstudy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 0.8, 'sample', 1]

O
###Magnetic and transport properties in pyrochlore iridates (Y$_{1-x}$Pr$_x$)$_2$Ir$_2$O$_7$: The role of $f$-$d$ exchange interaction and $d$-$p$ orbital hybridization|Harish Kumar,K. C. Kharkwal,Kranti Kumar,K. Asokan,A. Banerjee,A. K. Pramanik###
(795908, 795908)
 This evolution of magnetic and electronicproperties are believed to be induced by an exchange interaction betweenlocalized Pr-4f<missing VAR> and itinerant Ir-5d<missing VAR> electrons as well as by an increasedhybridization between Ir-t2g and (basal) O-p<missing VAR> orbitals as observed in X<missing VAR>ASstudy.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 0.8, 'sample', 1]

S
###Magnetic and transport properties in pyrochlore iridates (Y$_{1-x}$Pr$_x$)$_2$Ir$_2$O$_7$: The role of $f$-$d$ exchange interaction and $d$-$p$ orbital hybridization|Harish Kumar,K. C. Kharkwal,Kranti Kumar,K. Asokan,A. Banerjee,A. K. Pramanik###
(795922, 795922)
 This evolution of magnetic and electronicproperties are believed to be induced by an exchange interaction betweenlocalized Pr-4f<missing VAR> and itinerant Ir-5d<missing VAR> electrons as well as by an increasedhybridization between Ir-t2g and (basal) O-p<missing VAR> orbitals as observed in X<missing VAR>ASstudy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 0.8, 'sample', 1]

La0.7Ca0.3-x
###Broadband Magnetoresistance in Ferromagnetic and Paramagnetic Samples of La0.7Ca0.3-xSrxMnO3|U. Chaudhuri,A. Chanda,R. Mahendiran###
(796039, 796044)
Broadband Magnetoresistance in Ferromagnetic and Paramagnetic Samples of La0.7Ca0.3-xSrxMnO3.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[171.0, 0.1, 'to', 2],[172.0, 2.5, 'GHz', 2],[454.0, 0.1, 'and', 9]

MnO3
###Broadband Magnetoresistance in Ferromagnetic and Paramagnetic Samples of La0.7Ca0.3-xSrxMnO3|U. Chaudhuri,A. Chanda,R. Mahendiran###
(796046, 796048)
Broadband Magnetoresistance in Ferromagnetic and Paramagnetic Samples of La0.7Ca0.3-xSrxMnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 0.1, 'to', 2],[168.0, 2.5, 'GHz', 2],[450.0, 0.1, 'and', 9]

La0.7Ca0.3-x
###Broadband Magnetoresistance in Ferromagnetic and Paramagnetic Samples of La0.7Ca0.3-xSrxMnO3|U. Chaudhuri,A. Chanda,R. Mahendiran###
(796092, 796097)
 We have studied the room-temperature magnetoimpedance of paramagnetic (x<missing VAR> 0.06) and ferromagnetic (x<missing VAR>  0.1) samples in La0.7Ca0.3-xSrxMnO3 series using aradio-frequency impedance analyzer and also microwave power absorption using anetwork analyzer.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[118.0, 0.1, 'to', 1],[119.0, 2.5, 'GHz', 1],[401.0, 0.1, 'and', 8]

MnO3
###Broadband Magnetoresistance in Ferromagnetic and Paramagnetic Samples of La0.7Ca0.3-xSrxMnO3|U. Chaudhuri,A. Chanda,R. Mahendiran###
(796099, 796101)
 We have studied the room-temperature magnetoimpedance of paramagnetic (x<missing VAR> 0.06) and ferromagnetic (x<missing VAR>  0.1) samples in La0.7Ca0.3-xSrxMnO3 series using aradio-frequency impedance analyzer and also microwave power absorption using anetwork analyzer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 0.1, 'to', 1],[115.0, 2.5, 'GHz', 1],[397.0, 0.1, 'and', 8]

In
###Broadband Magnetoresistance in Ferromagnetic and Paramagnetic Samples of La0.7Ca0.3-xSrxMnO3|U. Chaudhuri,A. Chanda,R. Mahendiran###
(796138, 796138)
 In both measurements, samples were enclosed tightly inside acopper stripcoil and impedance or reflection coefficient of this copperstripcoil was measured as a function of the applied magnetic field fordifferent frequencies of current (f<missing VAR>  0.1 to 2.5 GHz).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 0.1, 'to', 0],[78.0, 2.5, 'GHz', 0],[360.0, 0.1, 'and', 7]

In
###Broadband Magnetoresistance in Ferromagnetic and Paramagnetic Samples of La0.7Ca0.3-xSrxMnO3|U. Chaudhuri,A. Chanda,R. Mahendiran###
(796259, 796259)
 In the ferromagnetic sample (x<missing VAR>  0.1), magnetoresistanceshows a peak around zero field for lower frequencies but a peak appears at Haway from the origin at higher frequencies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 0.1, 'to', 2],[43.0, 2.5, 'GHz', 2],[239.0, 0.1, 'and', 5]

H
###Broadband Magnetoresistance in Ferromagnetic and Paramagnetic Samples of La0.7Ca0.3-xSrxMnO3|U. Chaudhuri,A. Chanda,R. Mahendiran###
(796306, 796306)
 In the ferromagnetic sample (x<missing VAR>  0.1), magnetoresistanceshows a peak around zero field for lower frequencies but a peak appears at Haway from the origin at higher frequencies.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 0.1, 'to', 2],[90.0, 2.5, 'GHz', 2],[192.0, 0.1, 'and', 5]

SiP2
###Linear and quadratic magnetoresistance in the semimetal SiP2|Yuxing Zhou,Zhefeng Lou,ShengNan Zhang,Huancheng Chen,Qin Chen,Binjie Xu,Jianhua Du,Jinhu Yang,Hangdong Wang,QuanSheng Wu,Oleg V Yazyev,Minghu Fang###
(796537, 796539)
Linear and quadratic magnetoresistance in the semimetal SiP2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[295.0, 4, '%', 4],[300.0, 1.8, 'K', 4],[302.0, 31.2, 'T', 4]

In
###Linear and quadratic magnetoresistance in the semimetal SiP2|Yuxing Zhou,Zhefeng Lou,ShengNan Zhang,Huancheng Chen,Qin Chen,Binjie Xu,Jianhua Du,Jinhu Yang,Hangdong Wang,QuanSheng Wu,Oleg V Yazyev,Minghu Fang###
(796613, 796613)
 In this article, by the combination of band structure calculations,numerical simulations of magnetoresistance (MR), Hall resistivity and deHaas-van Alphen (d<missing VAR>HvA) oscillation measurements, we studied the MR anisotropyof SiP2 which is verified to be a topologically trivial, incompletecompensation semimetal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[221.0, 4, '%', 2],[226.0, 1.8, 'K', 2],[228.0, 31.2, 'T', 2]

SiP2
###Linear and quadratic magnetoresistance in the semimetal SiP2|Yuxing Zhou,Zhefeng Lou,ShengNan Zhang,Huancheng Chen,Qin Chen,Binjie Xu,Jianhua Du,Jinhu Yang,Hangdong Wang,QuanSheng Wu,Oleg V Yazyev,Minghu Fang###
(796690, 796692)
 In this article, by the combination of band structure calculations,numerical simulations of magnetoresistance (MR), Hall resistivity and deHaas-van Alphen (d<missing VAR>HvA) oscillation measurements, we studied the MR anisotropyof SiP2 which is verified to be a topologically trivial, incompletecompensation semimetal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 4, '%', 2],[147.0, 1.8, 'K', 2],[149.0, 31.2, 'T', 2]

H
###Linear and quadratic magnetoresistance in the semimetal SiP2|Yuxing Zhou,Zhefeng Lou,ShengNan Zhang,Huancheng Chen,Qin Chen,Binjie Xu,Jianhua Du,Jinhu Yang,Hangdong Wang,QuanSheng Wu,Oleg V Yazyev,Minghu Fang###
(796734, 796734)
 It was found that as magnetic field, H, is appliedalong the a axis, the MR exhibits an unsaturated nearly linear Hdependence, which was argued to arise from incomplete carriers compensation.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 4, '%', 1],[105.0, 1.8, 'K', 1],[107.0, 31.2, 'T', 1]

H
###Linear and quadratic magnetoresistance in the semimetal SiP2|Yuxing Zhou,Zhefeng Lou,ShengNan Zhang,Huancheng Chen,Qin Chen,Binjie Xu,Jianhua Du,Jinhu Yang,Hangdong Wang,QuanSheng Wu,Oleg V Yazyev,Minghu Fang###
(796766, 796766)
 It was found that as magnetic field, H, is appliedalong the a axis, the MR exhibits an unsaturated nearly linear Hdependence, which was argued to arise from incomplete carriers compensation.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 4, '%', 1],[73.0, 1.8, 'K', 1],[75.0, 31.2, 'T', 1]

H
###Linear and quadratic magnetoresistance in the semimetal SiP2|Yuxing Zhou,Zhefeng Lou,ShengNan Zhang,Huancheng Chen,Qin Chen,Binjie Xu,Jianhua Du,Jinhu Yang,Hangdong Wang,QuanSheng Wu,Oleg V Yazyev,Minghu Fang###
(796796, 796796)
For the H parallel [101] orientation, an unsaturated nearly quadratic Hdependence of MR up to 5.88 times 104% (at 1.8 K, 31.2 T) andfield-induced up-turn behavior in resistivity were observed, which wassuggested due to the existence of hole open orbits extending along the kxdirection.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 4, '%', 0],[43.0, 1.8, 'K', 0],[45.0, 31.2, 'T', 0]

H
###Linear and quadratic magnetoresistance in the semimetal SiP2|Yuxing Zhou,Zhefeng Lou,ShengNan Zhang,Huancheng Chen,Qin Chen,Binjie Xu,Jianhua Du,Jinhu Yang,Hangdong Wang,QuanSheng Wu,Oleg V Yazyev,Minghu Fang###
(796815, 796815)
For the H parallel [101] orientation, an unsaturated nearly quadratic Hdependence of MR up to 5.88 times 104% (at 1.8 K, 31.2 T) andfield-induced up-turn behavior in resistivity were observed, which wassuggested due to the existence of hole open orbits extending along the kxdirection.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 4, '%', 0],[24.0, 1.8, 'K', 0],[26.0, 31.2, 'T', 0]

(FS)
###Linear and quadratic magnetoresistance in the semimetal SiP2|Yuxing Zhou,Zhefeng Lou,ShengNan Zhang,Huancheng Chen,Qin Chen,Binjie Xu,Jianhua Du,Jinhu Yang,Hangdong Wang,QuanSheng Wu,Oleg V Yazyev,Minghu Fang###
(796933, 796936)
 Good agreement of the experimental results with the simulationsbased on the calculated Fermi surface (FS) indicates that the topology of FSplays an important role in its MR.
Featurization successful!
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 4, '%', 1],[94.0, 1.8, 'K', 1],[92.0, 31.2, 'T', 1]

FS
###Linear and quadratic magnetoresistance in the semimetal SiP2|Yuxing Zhou,Zhefeng Lou,ShengNan Zhang,Huancheng Chen,Qin Chen,Binjie Xu,Jianhua Du,Jinhu Yang,Hangdong Wang,QuanSheng Wu,Oleg V Yazyev,Minghu Fang###
(796948, 796949)
 Good agreement of the experimental results with the simulationsbased on the calculated Fermi surface (FS) indicates that the topology of FSplays an important role in its MR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 4, '%', 1],[109.0, 1.8, 'K', 1],[107.0, 31.2, 'T', 1]

II
###Thermopower and Unconventional Nernst in the Predicted Type-II Weyl Semi-metal WTe$_2$|K. Gaurav Rana,Fasil K. Dejene,Neeraj Kumar,Catherine R. Rajamathi,Kornelia Sklarek,Claudia Felser,Stuart S. P. Parkin###
(796992, 796993)
Thermopower and Unconventional Nernst in the Predicted Type-II Weyl Semi-metal WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Thermopower and Unconventional Nernst in the Predicted Type-II Weyl Semi-metal WTe$_2$|K. Gaurav Rana,Fasil K. Dejene,Neeraj Kumar,Catherine R. Rajamathi,Kornelia Sklarek,Claudia Felser,Stuart S. P. Parkin###
(797001, 797003)
Thermopower and Unconventional Nernst in the Predicted Type-II Weyl Semi-metal WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Thermopower and Unconventional Nernst in the Predicted Type-II Weyl Semi-metal WTe$_2$|K. Gaurav Rana,Fasil K. Dejene,Neeraj Kumar,Catherine R. Rajamathi,Kornelia Sklarek,Claudia Felser,Stuart S. P. Parkin###
(797006, 797008)
 WTe2 is one of a series of recently discovered high mobility semimetals,some of whose properties are characteristic of topological Dirac or Weylmetals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Thermopower and Unconventional Nernst in the Predicted Type-II Weyl Semi-metal WTe$_2$|K. Gaurav Rana,Fasil K. Dejene,Neeraj Kumar,Catherine R. Rajamathi,Kornelia Sklarek,Claudia Felser,Stuart S. P. Parkin###
(797188, 797190)
 Here we show that the longitudinal thermopower(Seebeck effect) of semi-metallic WTe2 exfoliated flakes exhibits periodicsign changes about zero with increasing magnetic field that indicates distinctelectron and hole Landau levels and nearly fully compensated electron and holecarrier densities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Thermopower and Unconventional Nernst in the Predicted Type-II Weyl Semi-metal WTe$_2$|K. Gaurav Rana,Fasil K. Dejene,Neeraj Kumar,Catherine R. Rajamathi,Kornelia Sklarek,Claudia Felser,Stuart S. P. Parkin###
(797361, 797363)
 Hence, we demonstrate the role played by theWeyl character of WTe2 in its transport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni80Fe
###Local spin transfer torque and magnetoresistance in domain walls with variable width|Hamidreza Kazemi,Sebastian Eggert,Nicholas Sedlmayr###
(797557, 797559)
 We now present afull quantum investigation of the magnetoresistance and the spin transfertorque in a domain wall, which is embedded in a nano-contact of Ni80Fe20, where the size of the domain wall becomes a relevant tunable parameter.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.012345679012345678,0,0.9876543209876543,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 20, ',', 0]

CeSb
###Magnetic-field-induced nontrivial electronic state in the Kondo-lattice semimetal CeSb|Y. Fang,F. Tang,Y. R. Ruan,J. M. Zhang,H. Zhang,H. Gu,W. Y. Zhao,Z. D. Han,W. Tian,B. Qian,X. F. Jiang,X. M. Zhang,X. Ke###
(797837, 797838)
Magnetic-field-induced nontrivial electronic state in the Kondo-lattice semimetal CeSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ce
###Magnetic-field-induced nontrivial electronic state in the Kondo-lattice semimetal CeSb|Y. Fang,F. Tang,Y. R. Ruan,J. M. Zhang,H. Zhang,H. Gu,W. Y. Zhao,Z. D. Han,W. Tian,B. Qian,X. F. Jiang,X. M. Zhang,X. Ke###
(797913, 797913)
 Recently,some Ce-based compounds are proposed to host intriguing topological nature,among which the electronic properties of CeSb are still under debate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CeSb
###Magnetic-field-induced nontrivial electronic state in the Kondo-lattice semimetal CeSb|Y. Fang,F. Tang,Y. R. Ruan,J. M. Zhang,H. Zhang,H. Gu,W. Y. Zhao,Z. D. Han,W. Tian,B. Qian,X. F. Jiang,X. M. Zhang,X. Ke###
(797947, 797948)
 Recently,some Ce-based compounds are proposed to host intriguing topological nature,among which the electronic properties of CeSb are still under debate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magnetic-field-induced nontrivial electronic state in the Kondo-lattice semimetal CeSb|Y. Fang,F. Tang,Y. R. Ruan,J. M. Zhang,H. Zhang,H. Gu,W. Y. Zhao,Z. D. Han,W. Tian,B. Qian,X. F. Jiang,X. M. Zhang,X. Ke###
(797959, 797959)
 In thispaper, we report a comprehensive study combining magnetic and electronictransport measurements, and electronic band structure calculations of thiscompound to identify its topological nature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaBi
###Magnetic-field-induced nontrivial electronic state in the Kondo-lattice semimetal CeSb|Y. Fang,F. Tang,Y. R. Ruan,J. M. Zhang,H. Zhang,H. Gu,W. Y. Zhao,Z. D. Han,W. Tian,B. Qian,X. F. Jiang,X. M. Zhang,X. Ke###
(798113, 798114)
 Angular-dependentmagnetoresistance shows that this pocket is elongated in nature and correspondsto the electron pocket as observed in LaBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CeSb
###Magnetic-field-induced nontrivial electronic state in the Kondo-lattice semimetal CeSb|Y. Fang,F. Tang,Y. R. Ruan,J. M. Zhang,H. Zhang,H. Gu,W. Y. Zhao,Z. D. Han,W. Tian,B. Qian,X. F. Jiang,X. M. Zhang,X. Ke###
(798126, 798127)
 Nontrivial electronic structure ofCeSb is further confirmed by first-principle calculations, which arises fromspin splitting in the fully polarized ferromagnetic state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Li
###Effects of the Zhang-Li Torque on Spin Torque nano Oscillators|Jan Albert,Ferran Macià,Joan Manel Hernàndez###
(798221, 798221)
Effects of the Zhang-Li Torque on Spin Torque nano Oscillators.
Featurization terminated normally.
0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Effects of the Zhang-Li Torque on Spin Torque nano Oscillators|Jan Albert,Ferran Macià,Joan Manel Hernàndez###
(798245, 798245)
 Spin-torque nano-oscillators (ST<missing VAR>NO) are microwave auto-oscillators based onmagnetic resonances having a nonlinear response with the oscillating amplitude,which provides them with a large frequency tunability including the possibilityof mutual synchronization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Effects of the Zhang-Li Torque on Spin Torque nano Oscillators|Jan Albert,Ferran Macià,Joan Manel Hernàndez###
(798248, 798248)
 Spin-torque nano-oscillators (ST<missing VAR>NO) are microwave auto-oscillators based onmagnetic resonances having a nonlinear response with the oscillating amplitude,which provides them with a large frequency tunability including the possibilityof mutual synchronization.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Effects of the Zhang-Li Torque on Spin Torque nano Oscillators|Jan Albert,Ferran Macià,Joan Manel Hernàndez###
(798324, 798324)
 The magnetization dynamics in ST<missing VAR>NO are induced byspin transfer torque (STT) from spin currents and can be detected by changes inelectrical resistance due to giant magnetoresistance or tunnelingmagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NO
###Effects of the Zhang-Li Torque on Spin Torque nano Oscillators|Jan Albert,Ferran Macià,Joan Manel Hernàndez###
(798326, 798327)
 The magnetization dynamics in ST<missing VAR>NO are induced byspin transfer torque (STT) from spin currents and can be detected by changes inelectrical resistance due to giant magnetoresistance or tunnelingmagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Effects of the Zhang-Li Torque on Spin Torque nano Oscillators|Jan Albert,Ferran Macià,Joan Manel Hernàndez###
(798343, 798343)
 The magnetization dynamics in ST<missing VAR>NO are induced byspin transfer torque (STT) from spin currents and can be detected by changes inelectrical resistance due to giant magnetoresistance or tunnelingmagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Effects of the Zhang-Li Torque on Spin Torque nano Oscillators|Jan Albert,Ferran Macià,Joan Manel Hernàndez###
(798391, 798391)
 The STT effect is usually treated as a damping-like termthat reduces magnetic dissipation and promotes excitation of magnetic modes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Li
###Effects of the Zhang-Li Torque on Spin Torque nano Oscillators|Jan Albert,Ferran Macià,Joan Manel Hernàndez###
(798452, 798452)
However, an additional term, known as Zhang-Li term has an effect onmagnetization gradients such as domain walls, and could have an effect onlocalized magnetic modes in ST<missing VAR>NO.
Featurization terminated normally.
0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Effects of the Zhang-Li Torque on Spin Torque nano Oscillators|Jan Albert,Ferran Macià,Joan Manel Hernàndez###
(798499, 798499)
However, an additional term, known as Zhang-Li term has an effect onmagnetization gradients such as domain walls, and could have an effect onlocalized magnetic modes in ST<missing VAR>NO.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NO
###Effects of the Zhang-Li Torque on Spin Torque nano Oscillators|Jan Albert,Ferran Macià,Joan Manel Hernàndez###
(798501, 798502)
However, an additional term, known as Zhang-Li term has an effect onmagnetization gradients such as domain walls, and could have an effect onlocalized magnetic modes in ST<missing VAR>NO.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Li
###Effects of the Zhang-Li Torque on Spin Torque nano Oscillators|Jan Albert,Ferran Macià,Joan Manel Hernàndez###
(798519, 798519)
 Here we study the effect of Zhang-Li torquesin magnetic excitations produced in ST<missing VAR>NO with a nanocontact geometry.
Featurization terminated normally.
0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Effects of the Zhang-Li Torque on Spin Torque nano Oscillators|Jan Albert,Ferran Macià,Joan Manel Hernàndez###
(798534, 798534)
 Here we study the effect of Zhang-Li torquesin magnetic excitations produced in ST<missing VAR>NO with a nanocontact geometry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NO
###Effects of the Zhang-Li Torque on Spin Torque nano Oscillators|Jan Albert,Ferran Macià,Joan Manel Hernàndez###
(798536, 798537)
 Here we study the effect of Zhang-Li torquesin magnetic excitations produced in ST<missing VAR>NO with a nanocontact geometry.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Li
###Effects of the Zhang-Li Torque on Spin Torque nano Oscillators|Jan Albert,Ferran Macià,Joan Manel Hernàndez###
(798563, 798563)
 Usingmicromagnetic simulations we find that Zhang-Li torque modify thresholdcurrents of magnetic modes and their effective sizes.
Featurization terminated normally.
0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HgTe
###Weak antilocalization in partially relaxed 200-nm HgTe films|M. L. Savchenko,D. A. Kozlov,Z. D. Kvon,N. N. Mikhailov,S. A. Dvoretsky###
(798650, 798651)
Weak antilocalization in partially relaxed 200-nm HgTe films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 3, 'D', 2]

W
###Weak antilocalization in partially relaxed 200-nm HgTe films|M. L. Savchenko,D. A. Kozlov,Z. D. Kvon,N. N. Mikhailov,S. A. Dvoretsky###
(798673, 798673)
 The anomalous magnetoresistance caused by the weak antilocalization (WAL)effects in 200-nm HgTe films is experimentally studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 3, 'D', 1]

HgTe
###Weak antilocalization in partially relaxed 200-nm HgTe films|M. L. Savchenko,D. A. Kozlov,Z. D. Kvon,N. N. Mikhailov,S. A. Dvoretsky###
(798687, 798688)
 The anomalous magnetoresistance caused by the weak antilocalization (WAL)effects in 200-nm HgTe films is experimentally studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 3, 'D', 1]

HgTe
###Weak antilocalization in partially relaxed 200-nm HgTe films|M. L. Savchenko,D. A. Kozlov,Z. D. Kvon,N. N. Mikhailov,S. A. Dvoretsky###
(798744, 798745)
 The film is a highquality 3D topological insulator with much stronger spatial separation ofsurface states than in previously studied thinner HgTe structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 3, 'D', 0]

W
###Weak antilocalization in partially relaxed 200-nm HgTe films|M. L. Savchenko,D. A. Kozlov,Z. D. Kvon,N. N. Mikhailov,S. A. Dvoretsky###
(798838, 798838)
 It has been shownthat at all positions of the Fermi level the system exhibits a WAL<missing VAR> conductivitycorrection superimposed on classical parabolic magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 3, 'D', 2]

W
###Weak antilocalization in partially relaxed 200-nm HgTe films|M. L. Savchenko,D. A. Kozlov,Z. D. Kvon,N. N. Mikhailov,S. A. Dvoretsky###
(798893, 798893)
 Since highmobility of carriers, the analysis of the obtained results was performed usinga ballistic WAL<missing VAR> theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[182.0, 3, 'D', 3]

W
###Weak antilocalization in partially relaxed 200-nm HgTe films|M. L. Savchenko,D. A. Kozlov,Z. D. Kvon,N. N. Mikhailov,S. A. Dvoretsky###
(798908, 798908)
 The maximum of the WAL<missing VAR> conductivity correctionamplitude was found at a Fermi level position near the bulk energy gapindicating to full decoupling of the surface carriers in these conditions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[197.0, 3, 'D', 4]

W
###Weak antilocalization in partially relaxed 200-nm HgTe films|M. L. Savchenko,D. A. Kozlov,Z. D. Kvon,N. N. Mikhailov,S. A. Dvoretsky###
(798970, 798970)
 TheWAL<missing VAR> amplitude monotonously decreases when the density of either bulk electronsor holes increases that results from the increasing coupling between surfaceand bulk carriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[259.0, 3, 'D', 5]

Nd4Ni3O10
###Contrasting physical properties of the trilayer nickelates Nd$_4$Ni$_3$O$_{10}$ and Nd$_4$Ni$_3$O$_8$|Qing Li,Chengping He,Xiyu Zhu,Jin Si,Xinwei Fan,Hai-Hu Wen###
(799047, 799052)
Contrasting physical properties of the trilayer nickelates Nd4Ni3O10 and Nd4Ni3O8.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5882352941176471,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.17647058823529413,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23529411764705882,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 162, 'K', 3],[383.0, 49, 'GPa', 9]

Nd4Ni3O8
###Contrasting physical properties of the trilayer nickelates Nd$_4$Ni$_3$O$_{10}$ and Nd$_4$Ni$_3$O$_8$|Qing Li,Chengping He,Xiyu Zhu,Jin Si,Xinwei Fan,Hai-Hu Wen###
(799056, 799061)
Contrasting physical properties of the trilayer nickelates Nd4Ni3O10 and Nd4Ni3O8.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.26666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 162, 'K', 3],[374.0, 49, 'GPa', 9]

Nd4Ni3O10
###Contrasting physical properties of the trilayer nickelates Nd$_4$Ni$_3$O$_{10}$ and Nd$_4$Ni$_3$O$_8$|Qing Li,Chengping He,Xiyu Zhu,Jin Si,Xinwei Fan,Hai-Hu Wen###
(799087, 799092)
 We report the crystal structures and physical properties of trilayernickelates Nd4Ni3O10 and Nd4Ni3O8.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5882352941176471,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.17647058823529413,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23529411764705882,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 162, 'K', 2],[343.0, 49, 'GPa', 8]

Nd4Ni3O8
###Contrasting physical properties of the trilayer nickelates Nd$_4$Ni$_3$O$_{10}$ and Nd$_4$Ni$_3$O$_8$|Qing Li,Chengping He,Xiyu Zhu,Jin Si,Xinwei Fan,Hai-Hu Wen###
(799096, 799101)
 We report the crystal structures and physical properties of trilayernickelates Nd4Ni3O10 and Nd4Ni3O8.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.26666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 162, 'K', 2],[334.0, 49, 'GPa', 8]

Nd4Ni3O10
###Contrasting physical properties of the trilayer nickelates Nd$_4$Ni$_3$O$_{10}$ and Nd$_4$Ni$_3$O$_8$|Qing Li,Chengping He,Xiyu Zhu,Jin Si,Xinwei Fan,Hai-Hu Wen###
(799133, 799138)
 Nd4Ni3O10 shows a paramagnetic metallic behavior witha metal to metal phase transition(T<missing VAR>ast) at about 162 K, as revealed byboth magnetic susceptibility and resistivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5882352941176471,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.17647058823529413,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23529411764705882,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 162, 'K', 0],[297.0, 49, 'GPa', 6]

Nd4Ni3O10
###Contrasting physical properties of the trilayer nickelates Nd$_4$Ni$_3$O$_{10}$ and Nd$_4$Ni$_3$O$_8$|Qing Li,Chengping He,Xiyu Zhu,Jin Si,Xinwei Fan,Hai-Hu Wen###
(799231, 799236)
 Further magnetoresistance andHall coefficient results show a negative magnetoresistance at low temperaturesand the carrier type of Nd4Ni3O10 is dominated by hole-type chargecarriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5882352941176471,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.17647058823529413,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23529411764705882,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 162, 'K', 1],[199.0, 49, 'GPa', 5]

In
###Contrasting physical properties of the trilayer nickelates Nd$_4$Ni$_3$O$_{10}$ and Nd$_4$Ni$_3$O$_8$|Qing Li,Chengping He,Xiyu Zhu,Jin Si,Xinwei Fan,Hai-Hu Wen###
(799304, 799304)
 In contrast, Nd4Ni3O8 shows aninsulating behavior despite small value of resistivity at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 162, 'K', 3],[131.0, 49, 'GPa', 3]

Nd4Ni3O8
###Contrasting physical properties of the trilayer nickelates Nd$_4$Ni$_3$O$_{10}$ and Nd$_4$Ni$_3$O$_8$|Qing Li,Chengping He,Xiyu Zhu,Jin Si,Xinwei Fan,Hai-Hu Wen###
(799309, 799314)
 In contrast, Nd4Ni3O8 shows aninsulating behavior despite small value of resistivity at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.26666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 162, 'K', 3],[121.0, 49, 'GPa', 3]

Nd4Ni3O10
###Contrasting physical properties of the trilayer nickelates Nd$_4$Ni$_3$O$_{10}$ and Nd$_4$Ni$_3$O$_8$|Qing Li,Chengping He,Xiyu Zhu,Jin Si,Xinwei Fan,Hai-Hu Wen###
(799369, 799374)
 Thecompound shows paramagnetic behavior, with the similar magnetic moments as inNd4Ni3O10 derived from the Curie-Weiss fitting.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5882352941176471,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.17647058823529413,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23529411764705882,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[197.0, 162, 'K', 4],[61.0, 49, 'GPa', 2]

Nd
###Contrasting physical properties of the trilayer nickelates Nd$_4$Ni$_3$O$_{10}$ and Nd$_4$Ni$_3$O$_8$|Qing Li,Chengping He,Xiyu Zhu,Jin Si,Xinwei Fan,Hai-Hu Wen###
(799418, 799418)
 This may suggestthat the magnetic moments in both systems are contributed by the Nd ions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[246.0, 162, 'K', 5],[17.0, 49, 'GPa', 1]

Ni
###Contrasting physical properties of the trilayer nickelates Nd$_4$Ni$_3$O$_{10}$ and Nd$_4$Ni$_3$O$_8$|Qing Li,Chengping He,Xiyu Zhu,Jin Si,Xinwei Fan,Hai-Hu Wen###
(799472, 799472)
 Our results suggest that the different Niconfigurations (Ni1/2 or Ni2/3) and competition between localizedand itinerant electrons may account for the contrasting behaviors in trilayernickelates Nd4Ni3O10 and Nd4Ni3O8.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[300.0, 162, 'K', 7],[37.0, 49, 'GPa', 1]

Ni1
###Contrasting physical properties of the trilayer nickelates Nd$_4$Ni$_3$O$_{10}$ and Nd$_4$Ni$_3$O$_8$|Qing Li,Chengping He,Xiyu Zhu,Jin Si,Xinwei Fan,Hai-Hu Wen###
(799478, 799479)
 Our results suggest that the different Niconfigurations (Ni1/2 or Ni2/3) and competition between localizedand itinerant electrons may account for the contrasting behaviors in trilayernickelates Nd4Ni3O10 and Nd4Ni3O8.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[306.0, 162, 'K', 7],[43.0, 49, 'GPa', 1]

Ni2
###Contrasting physical properties of the trilayer nickelates Nd$_4$Ni$_3$O$_{10}$ and Nd$_4$Ni$_3$O$_8$|Qing Li,Chengping He,Xiyu Zhu,Jin Si,Xinwei Fan,Hai-Hu Wen###
(799485, 799486)
 Our results suggest that the different Niconfigurations (Ni1/2 or Ni2/3) and competition between localizedand itinerant electrons may account for the contrasting behaviors in trilayernickelates Nd4Ni3O10 and Nd4Ni3O8.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[313.0, 162, 'K', 7],[50.0, 49, 'GPa', 1]

Nd4Ni3O10
###Contrasting physical properties of the trilayer nickelates Nd$_4$Ni$_3$O$_{10}$ and Nd$_4$Ni$_3$O$_8$|Qing Li,Chengping He,Xiyu Zhu,Jin Si,Xinwei Fan,Hai-Hu Wen###
(799525, 799530)
 Our results suggest that the different Niconfigurations (Ni1/2 or Ni2/3) and competition between localizedand itinerant electrons may account for the contrasting behaviors in trilayernickelates Nd4Ni3O10 and Nd4Ni3O8.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5882352941176471,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.17647058823529413,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23529411764705882,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[353.0, 162, 'K', 7],[90.0, 49, 'GPa', 1]

Nd4Ni3O8
###Contrasting physical properties of the trilayer nickelates Nd$_4$Ni$_3$O$_{10}$ and Nd$_4$Ni$_3$O$_8$|Qing Li,Chengping He,Xiyu Zhu,Jin Si,Xinwei Fan,Hai-Hu Wen###
(799534, 799539)
 Our results suggest that the different Niconfigurations (Ni1/2 or Ni2/3) and competition between localizedand itinerant electrons may account for the contrasting behaviors in trilayernickelates Nd4Ni3O10 and Nd4Ni3O8.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.26666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[362.0, 162, 'K', 7],[99.0, 49, 'GPa', 1]

Bi
###Two-fold symmetry of in-plane magnetoresistance anisotropy in the superconducting states of BiCh2-based LaO0.9F0.1BiSSe single crystal|Kazuhisa Hoshi,Motoi Kimata,Yosuke Goto,Akira Miura,Chikao Moriyoshi,Yoshihiro Kuroiwa,Masanori Nagao,Yoshikazu Mizuguchi###
(799576, 799576)
Two-fold symmetry of in-plane magnetoresistance anisotropy in the superconducting states of BiCh2-based LaO0.9F0.1BiSSe single crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[248.0, 15, 'T', 2]

LaO0.9F0.1BiSSe
###Two-fold symmetry of in-plane magnetoresistance anisotropy in the superconducting states of BiCh2-based LaO0.9F0.1BiSSe single crystal|Kazuhisa Hoshi,Motoi Kimata,Yosuke Goto,Akira Miura,Chikao Moriyoshi,Yoshihiro Kuroiwa,Masanori Nagao,Yoshikazu Mizuguchi###
(799582, 799589)
Two-fold symmetry of in-plane magnetoresistance anisotropy in the superconducting states of BiCh2-based LaO0.9F0.1BiSSe single crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0.18,0.02,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[235.0, 15, 'T', 2]

Bi
###Two-fold symmetry of in-plane magnetoresistance anisotropy in the superconducting states of BiCh2-based LaO0.9F0.1BiSSe single crystal|Kazuhisa Hoshi,Motoi Kimata,Yosuke Goto,Akira Miura,Chikao Moriyoshi,Yoshihiro Kuroiwa,Masanori Nagao,Yoshikazu Mizuguchi###
(799636, 799636)
 Recently, two-fold symmetric in-plane anisotropy of the superconductingproperties have been observed in a single crystal of BiCh2-based (Ch S, Se)layered superconductor LaO0.5F0.5BiSSe having a tetragonal(four-fold-symmetric) in-plane structure; the phenomena are very similar tothose observed in nematic superconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 15, 'T', 1]

S
###Two-fold symmetry of in-plane magnetoresistance anisotropy in the superconducting states of BiCh2-based LaO0.9F0.1BiSSe single crystal|Kazuhisa Hoshi,Motoi Kimata,Yosuke Goto,Akira Miura,Chikao Moriyoshi,Yoshihiro Kuroiwa,Masanori Nagao,Yoshikazu Mizuguchi###
(799645, 799645)
 Recently, two-fold symmetric in-plane anisotropy of the superconductingproperties have been observed in a single crystal of BiCh2-based (Ch S, Se)layered superconductor LaO0.5F0.5BiSSe having a tetragonal(four-fold-symmetric) in-plane structure; the phenomena are very similar tothose observed in nematic superconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 15, 'T', 1]

Se
###Two-fold symmetry of in-plane magnetoresistance anisotropy in the superconducting states of BiCh2-based LaO0.9F0.1BiSSe single crystal|Kazuhisa Hoshi,Motoi Kimata,Yosuke Goto,Akira Miura,Chikao Moriyoshi,Yoshihiro Kuroiwa,Masanori Nagao,Yoshikazu Mizuguchi###
(799648, 799648)
 Recently, two-fold symmetric in-plane anisotropy of the superconductingproperties have been observed in a single crystal of BiCh2-based (Ch S, Se)layered superconductor LaO0.5F0.5BiSSe having a tetragonal(four-fold-symmetric) in-plane structure; the phenomena are very similar tothose observed in nematic superconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[176.0, 15, 'T', 1]

LaO0.5F0.5BiSSe
###Two-fold symmetry of in-plane magnetoresistance anisotropy in the superconducting states of BiCh2-based LaO0.9F0.1BiSSe single crystal|Kazuhisa Hoshi,Motoi Kimata,Yosuke Goto,Akira Miura,Chikao Moriyoshi,Yoshihiro Kuroiwa,Masanori Nagao,Yoshikazu Mizuguchi###
(799656, 799663)
 Recently, two-fold symmetric in-plane anisotropy of the superconductingproperties have been observed in a single crystal of BiCh2-based (Ch S, Se)layered superconductor LaO0.5F0.5BiSSe having a tetragonal(four-fold-symmetric) in-plane structure; the phenomena are very similar tothose observed in nematic superconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0.1,0.1,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 15, 'T', 1]

Bi
###Two-fold symmetry of in-plane magnetoresistance anisotropy in the superconducting states of BiCh2-based LaO0.9F0.1BiSSe single crystal|Kazuhisa Hoshi,Motoi Kimata,Yosuke Goto,Akira Miura,Chikao Moriyoshi,Yoshihiro Kuroiwa,Masanori Nagao,Yoshikazu Mizuguchi###
(799736, 799736)
 To explore the origin of thetwo-fold symmetric anisotropy in the BiCh2-based system, we have investigatedthe electron-doping dependence on the anisotropy by examining the in-planeanisotropy of the magnetoresistance in the superconducting states for a singlecrystal of LaO0.9F0.1BiSSe under high magnetic fields up to 15 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 15, 'T', 0]

LaO0.9F0.1BiSSe
###Two-fold symmetry of in-plane magnetoresistance anisotropy in the superconducting states of BiCh2-based LaO0.9F0.1BiSSe single crystal|Kazuhisa Hoshi,Motoi Kimata,Yosuke Goto,Akira Miura,Chikao Moriyoshi,Yoshihiro Kuroiwa,Masanori Nagao,Yoshikazu Mizuguchi###
(799804, 799811)
 To explore the origin of thetwo-fold symmetric anisotropy in the BiCh2-based system, we have investigatedthe electron-doping dependence on the anisotropy by examining the in-planeanisotropy of the magnetoresistance in the superconducting states for a singlecrystal of LaO0.9F0.1BiSSe under high magnetic fields up to 15 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0.18,0.02,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 15, 'T', 0]

LaO0.9F0.1BiSSe
###Two-fold symmetry of in-plane magnetoresistance anisotropy in the superconducting states of BiCh2-based LaO0.9F0.1BiSSe single crystal|Kazuhisa Hoshi,Motoi Kimata,Yosuke Goto,Akira Miura,Chikao Moriyoshi,Yoshihiro Kuroiwa,Masanori Nagao,Yoshikazu Mizuguchi###
(799855, 799862)
 We observed atwo-fold symmetry of in-plane anisotropy of magnetoresistance forLaO0.9F0.1BiSSe.
Featurization terminated normally.
0,0,0,0,0,0,0,0.18,0.02,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 15, 'T', 1]

LaO0.9F0.1BiSSe
###Two-fold symmetry of in-plane magnetoresistance anisotropy in the superconducting states of BiCh2-based LaO0.9F0.1BiSSe single crystal|Kazuhisa Hoshi,Motoi Kimata,Yosuke Goto,Akira Miura,Chikao Moriyoshi,Yoshihiro Kuroiwa,Masanori Nagao,Yoshikazu Mizuguchi###
(799873, 799880)
 The results obtained for LaO0.9F0.1BiSSe are quite similar tothose observed for LaO0.5F0.5BiSSe, which has a higher electron dopingconcentration than LaO0.9F0.1BiSSe.
Featurization terminated normally.
0,0,0,0,0,0,0,0.18,0.02,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 15, 'T', 2]

LaO0.5F0.5BiSSe
###Two-fold symmetry of in-plane magnetoresistance anisotropy in the superconducting states of BiCh2-based LaO0.9F0.1BiSSe single crystal|Kazuhisa Hoshi,Motoi Kimata,Yosuke Goto,Akira Miura,Chikao Moriyoshi,Yoshihiro Kuroiwa,Masanori Nagao,Yoshikazu Mizuguchi###
(799897, 799904)
 The results obtained for LaO0.9F0.1BiSSe are quite similar tothose observed for LaO0.5F0.5BiSSe, which has a higher electron dopingconcentration than LaO0.9F0.1BiSSe.
Featurization terminated normally.
0,0,0,0,0,0,0,0.1,0.1,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 15, 'T', 2]

LaO0.9F0.1BiSSe
###Two-fold symmetry of in-plane magnetoresistance anisotropy in the superconducting states of BiCh2-based LaO0.9F0.1BiSSe single crystal|Kazuhisa Hoshi,Motoi Kimata,Yosuke Goto,Akira Miura,Chikao Moriyoshi,Yoshihiro Kuroiwa,Masanori Nagao,Yoshikazu Mizuguchi###
(799924, 799931)
 The results obtained for LaO0.9F0.1BiSSe are quite similar tothose observed for LaO0.5F0.5BiSSe, which has a higher electron dopingconcentration than LaO0.9F0.1BiSSe.
Featurization terminated normally.
0,0,0,0,0,0,0,0.18,0.02,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 15, 'T', 2]

LaO1-x
###Two-fold symmetry of in-plane magnetoresistance anisotropy in the superconducting states of BiCh2-based LaO0.9F0.1BiSSe single crystal|Kazuhisa Hoshi,Motoi Kimata,Yosuke Goto,Akira Miura,Chikao Moriyoshi,Yoshihiro Kuroiwa,Masanori Nagao,Yoshikazu Mizuguchi###
(799990, 799994)
 Our present finding suggests that theemergence of the in-plane symmetry breaking in the superconducting state isrobust to the carrier concentration in the series of LaO1-xFxBiSSe.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[166.0, 15, 'T', 3]

BiSSe
###Two-fold symmetry of in-plane magnetoresistance anisotropy in the superconducting states of BiCh2-based LaO0.9F0.1BiSSe single crystal|Kazuhisa Hoshi,Motoi Kimata,Yosuke Goto,Akira Miura,Chikao Moriyoshi,Yoshihiro Kuroiwa,Masanori Nagao,Yoshikazu Mizuguchi###
(799996, 799998)
 Our present finding suggests that theemergence of the in-plane symmetry breaking in the superconducting state isrobust to the carrier concentration in the series of LaO1-xFxBiSSe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[172.0, 15, 'T', 3]

MoO2
###Large magnetoresistance and non-zero Berry phase in the nodal-line semimetal MoO2|Qin Chen,Zhefeng Lou,ShengNan Zhang,Binjie Xu,Yuxing Zhou,Huancheng Chen,Shuijin Chen,Jianhua Du,Hangdong Wang,Jinhu Yang,QuanSheng Wu,Oleg V. Yazyev,Minghu Fang###
(800033, 800035)
Large magnetoresistance and non-zero Berry phase in the nodal-line semimetal MoO2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 5.03, 'x', 3],[167.0, 4, '%', 3],[171.0, 2, 'K', 3],[174.0, 9, 'T', 3]

H
###Large magnetoresistance and non-zero Berry phase in the nodal-line semimetal MoO2|Qin Chen,Zhefeng Lou,ShengNan Zhang,Binjie Xu,Yuxing Zhou,Huancheng Chen,Shuijin Chen,Jianhua Du,Hangdong Wang,Jinhu Yang,QuanSheng Wu,Oleg V. Yazyev,Minghu Fang###
(800081, 800081)
 We performed calculations of the electronic band structure and the Fermisurface as well as measured the longitudinal resistivity rhoxx(T<missing VAR>,H), Hallresistivity rhoxy(T<missing VAR>,H) and quantum oscillations of the magnetization as afunction of temperature at various magnetic fields for MoO2 with monocliniccrystal structure.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 5.03, 'x', 2],[121.0, 4, '%', 2],[125.0, 2, 'K', 2],[128.0, 9, 'T', 2]

H
###Large magnetoresistance and non-zero Berry phase in the nodal-line semimetal MoO2|Qin Chen,Zhefeng Lou,ShengNan Zhang,Binjie Xu,Yuxing Zhou,Huancheng Chen,Shuijin Chen,Jianhua Du,Hangdong Wang,Jinhu Yang,QuanSheng Wu,Oleg V. Yazyev,Minghu Fang###
(800094, 800094)
 We performed calculations of the electronic band structure and the Fermisurface as well as measured the longitudinal resistivity rhoxx(T<missing VAR>,H), Hallresistivity rhoxy(T<missing VAR>,H) and quantum oscillations of the magnetization as afunction of temperature at various magnetic fields for MoO2 with monocliniccrystal structure.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 5.03, 'x', 2],[108.0, 4, '%', 2],[112.0, 2, 'K', 2],[115.0, 9, 'T', 2]

MoO2
###Large magnetoresistance and non-zero Berry phase in the nodal-line semimetal MoO2|Qin Chen,Zhefeng Lou,ShengNan Zhang,Binjie Xu,Yuxing Zhou,Huancheng Chen,Shuijin Chen,Jianhua Du,Hangdong Wang,Jinhu Yang,QuanSheng Wu,Oleg V. Yazyev,Minghu Fang###
(800130, 800132)
 We performed calculations of the electronic band structure and the Fermisurface as well as measured the longitudinal resistivity rhoxx(T<missing VAR>,H), Hallresistivity rhoxy(T<missing VAR>,H) and quantum oscillations of the magnetization as afunction of temperature at various magnetic fields for MoO2 with monocliniccrystal structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 5.03, 'x', 2],[70.0, 4, '%', 2],[74.0, 2, 'K', 2],[77.0, 9, 'T', 2]

MoO2
###Large magnetoresistance and non-zero Berry phase in the nodal-line semimetal MoO2|Qin Chen,Zhefeng Lou,ShengNan Zhang,Binjie Xu,Yuxing Zhou,Huancheng Chen,Shuijin Chen,Jianhua Du,Hangdong Wang,Jinhu Yang,QuanSheng Wu,Oleg V. Yazyev,Minghu Fang###
(800156, 800158)
 The band structure calculations show that MoO2 is anodal-line semimetal when spin-orbit coupling is ignored.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 5.03, 'x', 1],[44.0, 4, '%', 1],[48.0, 2, 'K', 1],[51.0, 9, 'T', 1]

MoO2
###Large magnetoresistance and non-zero Berry phase in the nodal-line semimetal MoO2|Qin Chen,Zhefeng Lou,ShengNan Zhang,Binjie Xu,Yuxing Zhou,Huancheng Chen,Shuijin Chen,Jianhua Du,Hangdong Wang,Jinhu Yang,QuanSheng Wu,Oleg V. Yazyev,Minghu Fang###
(800280, 800282)
 It was found that alarge magnetoresistance reaching 5.03x104% at 2 K and 9 T, its nearlyquadratic field dependence and a field-induced up-turn behavior of rhoxx(T),the characteristics common for many topologically non-trivial as well astrivial semimetals, emerge also in MoO2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 5.03, 'x', 0],[78.0, 4, '%', 0],[74.0, 2, 'K', 0],[71.0, 9, 'T', 0]

MoO2
###Large magnetoresistance and non-zero Berry phase in the nodal-line semimetal MoO2|Qin Chen,Zhefeng Lou,ShengNan Zhang,Binjie Xu,Yuxing Zhou,Huancheng Chen,Shuijin Chen,Jianhua Du,Hangdong Wang,Jinhu Yang,QuanSheng Wu,Oleg V. Yazyev,Minghu Fang###
(800410, 800412)
Both the observation of negative magnetoresistance for magnetic field along thecurrent direction and the non-zero Berry phase in de Haas-van Alphenmeasurements indicate that pairs of Weyl points appear in MoO2, which may bedue to the crystal symmetry breaking.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[210.0, 5.03, 'x', 2],[208.0, 4, '%', 2],[204.0, 2, 'K', 2],[201.0, 9, 'T', 2]

MoO2
###Large magnetoresistance and non-zero Berry phase in the nodal-line semimetal MoO2|Qin Chen,Zhefeng Lou,ShengNan Zhang,Binjie Xu,Yuxing Zhou,Huancheng Chen,Shuijin Chen,Jianhua Du,Hangdong Wang,Jinhu Yang,QuanSheng Wu,Oleg V. Yazyev,Minghu Fang###
(800441, 800443)
 These results highlight MoO2 as a newplatform materials for studying the topological properties of oxides.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[241.0, 5.03, 'x', 3],[239.0, 4, '%', 3],[235.0, 2, 'K', 3],[232.0, 9, 'T', 3]

CaCdSn
###Magnetotransport properties of the topological nodal-line semimetal CaCdSn|Antu Laha,Sougata Mardanya,Bahadur Singh,Hsin Lin,Arun Bansil,Amit Agarwal,Z. Hossain###
(800495, 800497)
Magnetotransport properties of the topological nodal-line semimetal CaCdSn.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[377.0, 3, '%', 6]

CaCdSn
###Magnetotransport properties of the topological nodal-line semimetal CaCdSn|Antu Laha,Sougata Mardanya,Bahadur Singh,Hsin Lin,Arun Bansil,Amit Agarwal,Z. Hossain###
(800583, 800585)
 Here we address the topological state of thenodal-line semimetal candidate material, CaCdSn, and report magnetotransportproperties of its single crystals grown by the self-flux method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[289.0, 3, '%', 4]

CaCdSn
###Magnetotransport properties of the topological nodal-line semimetal CaCdSn|Antu Laha,Sougata Mardanya,Bahadur Singh,Hsin Lin,Arun Bansil,Amit Agarwal,Z. Hossain###
(800639, 800641)
 Ourfirst-principles calculations show that the electronic structure of CaCdSnharbors a single nodal loop around the Gamma point in the absence ofspin-orbit coupling (SOC) effects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[233.0, 3, '%', 3]

(SOC)
###Magnetotransport properties of the topological nodal-line semimetal CaCdSn|Antu Laha,Sougata Mardanya,Bahadur Singh,Hsin Lin,Arun Bansil,Amit Agarwal,Z. Hossain###
(800677, 800681)
 Ourfirst-principles calculations show that the electronic structure of CaCdSnharbors a single nodal loop around the Gamma point in the absence ofspin-orbit coupling (SOC) effects.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[193.0, 3, '%', 3]

CaCdSn
###Magnetotransport properties of the topological nodal-line semimetal CaCdSn|Antu Laha,Sougata Mardanya,Bahadur Singh,Hsin Lin,Arun Bansil,Amit Agarwal,Z. Hossain###
(800694, 800696)
 The nodal crossings in CaCdSn are found tolie above the Fermi level and yield a Fermi surface that consists of bothelectron and hole pockets.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 3, '%', 2]

CaCdSn
###Magnetotransport properties of the topological nodal-line semimetal CaCdSn|Antu Laha,Sougata Mardanya,Bahadur Singh,Hsin Lin,Arun Bansil,Amit Agarwal,Z. Hossain###
(800743, 800745)
 CaCdSn exhibits high mobility (mu approx3.44times 104 cm2V-1s<missing VAR>-1) and displays a field-inducedmetal-semiconductor like crossover with a plateau in resistivity at lowtemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 3, '%', 1]

V
###Magnetotransport properties of the topological nodal-line semimetal CaCdSn|Antu Laha,Sougata Mardanya,Bahadur Singh,Hsin Lin,Arun Bansil,Amit Agarwal,Z. Hossain###
(800767, 800767)
 CaCdSn exhibits high mobility (mu approx3.44times 104 cm2V-1s<missing VAR>-1) and displays a field-inducedmetal-semiconductor like crossover with a plateau in resistivity at lowtemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 3, '%', 1]

K
###Magnetotransport properties of the topological nodal-line semimetal CaCdSn|Antu Laha,Sougata Mardanya,Bahadur Singh,Hsin Lin,Arun Bansil,Amit Agarwal,Z. Hossain###
(800885, 800885)
 We observe an extremely large and quasilinear non-saturatingtransverse as well as longitudinal magnetoresistance (MR) at low temperatures(approx 7.44times 103 % and approx 1.71times 103%, respectively, at4K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 3, '%', 0]

CaCdSn
###Magnetotransport properties of the topological nodal-line semimetal CaCdSn|Antu Laha,Sougata Mardanya,Bahadur Singh,Hsin Lin,Arun Bansil,Amit Agarwal,Z. Hossain###
(800933, 800935)
 We also briefly discuss possible reasons behind such a large quasilinearmagnetoresistance and its connection with the nontrivial band structure ofCaCdSn.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 3, '%', 1]

LuB12
###Hall effect and symmetry breaking in non-magnetic metal with dynamic charge stripes|N. Sluchanko,A. Azarevich,A. Bogach,S. Demishev,K. Krasikov,V. Voronov,V. Filipov,N. Shitsevalova,V. Glushkov###
(801018, 801020)
 A comprehensive study of magnetoresistance and Hall effect has been performedfor the set of the single crystals of non-magnetic metal LuB12 with theJahn-Teller instability of the boron cage and dynamic charge stripes formingalong <110> direction.
Featurization terminated normally.
0,0,0,0,0.9230769230769231,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 110, '>', 0],[110.0, 150, 'K', 2]

H
###Hall effect and symmetry breaking in non-magnetic metal with dynamic charge stripes|N. Sluchanko,A. Azarevich,A. Bogach,S. Demishev,K. Krasikov,V. Voronov,V. Filipov,N. Shitsevalova,V. Glushkov###
(801086, 801086)
 Anomalous positive contribution to Hall effect forparticular direction of magnetic field H//[001] is found in the single crystalsof LuB12 of the highest quality.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 110, '>', 1],[44.0, 150, 'K', 1]

LuB12
###Hall effect and symmetry breaking in non-magnetic metal with dynamic charge stripes|N. Sluchanko,A. Azarevich,A. Bogach,S. Demishev,K. Krasikov,V. Voronov,V. Filipov,N. Shitsevalova,V. Glushkov###
(801108, 801110)
 Anomalous positive contribution to Hall effect forparticular direction of magnetic field H//[001] is found in the single crystalsof LuB12 of the highest quality.
Featurization terminated normally.
0,0,0,0,0.9230769230769231,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 110, '>', 1],[20.0, 150, 'K', 1]

K
###Hall effect and symmetry breaking in non-magnetic metal with dynamic charge stripes|N. Sluchanko,A. Azarevich,A. Bogach,S. Demishev,K. Krasikov,V. Voronov,V. Filipov,N. Shitsevalova,V. Glushkov###
(801160, 801160)
 This contribution arising at T<missing VAR> 150 K is shownto increase drastically when approaching the disordered ground state below 60K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 110, '>', 2],[30.0, 150, 'K', 0]

H
###Hall effect and symmetry breaking in non-magnetic metal with dynamic charge stripes|N. Sluchanko,A. Azarevich,A. Bogach,S. Demishev,K. Krasikov,V. Voronov,V. Filipov,N. Shitsevalova,V. Glushkov###
(801292, 801292)
 The origin of SdH oscillations, which are observed in thisnon-equilibrium metal with electron phase separation and strong charge carrierscattering, is discussed.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[237.0, 110, '>', 5],[162.0, 150, 'K', 3]

Na3Bi
###Review of experiments on the chiral anomaly in Dirac-Weyl semimetals|N. P. Ong,Sihang Liang###
(801629, 801631)
 Turning to experiments, we review critically thelongitudinal magnetoresistance experiments in the Dirac/Weyl semimetals Na3Bi,GdPtBi, ZrTe5 and TaAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[190.0, 3, 'D', 5]

GdPtBi
###Review of experiments on the chiral anomaly in Dirac-Weyl semimetals|N. P. Ong,Sihang Liang###
(801635, 801637)
 Turning to experiments, we review critically thelongitudinal magnetoresistance experiments in the Dirac/Weyl semimetals Na3Bi,GdPtBi, ZrTe5 and TaAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[196.0, 3, 'D', 5]

ZrTe5
###Review of experiments on the chiral anomaly in Dirac-Weyl semimetals|N. P. Ong,Sihang Liang###
(801640, 801642)
 Turning to experiments, we review critically thelongitudinal magnetoresistance experiments in the Dirac/Weyl semimetals Na3Bi,GdPtBi, ZrTe5 and TaAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[201.0, 3, 'D', 5]

TaAs
###Review of experiments on the chiral anomaly in Dirac-Weyl semimetals|N. P. Ong,Sihang Liang###
(801646, 801647)
 Turning to experiments, we review critically thelongitudinal magnetoresistance experiments in the Dirac/Weyl semimetals Na3Bi,GdPtBi, ZrTe5 and TaAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[207.0, 3, 'D', 5]

In
###Review of experiments on the chiral anomaly in Dirac-Weyl semimetals|N. P. Ong,Sihang Liang###
(801700, 801700)
 In the Supplement, we provide a briefdiscussion of the chiral anomaly in the broader context of high energy physicsand relativistic quantum field theory, as well the anomalys<missing VAR> starring role atthe nexus of quantum physics and differential geometry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[261.0, 3, 'D', 7]

In
###Domain Wall-Magnetic Tunnel Junction Spin Orbit Torque Devices and Circuits for In-Memory Computing|Mahshid Alamdar,Thomas Leonard,Can Cui,Bishweshwor P. Rimal,Lin Xue,Otitoaleke G. Akinola,T. Patrick Xiao,Joseph S. Friedman,Christopher H. Bennett,Matthew J. Marinella,Jean Anne C. Incorvia###
(801819, 801819)
Domain Wall-Magnetic Tunnel Junction Spin Orbit Torque Devices and Circuits for In-Memory Computing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[384.0, 164, '%', 5],[405.0, 2, ',', 5],[495.0, 7, '%', 7],[523.0, 96, '%', 7]

W
###Domain Wall-Magnetic Tunnel Junction Spin Orbit Torque Devices and Circuits for In-Memory Computing|Mahshid Alamdar,Thomas Leonard,Can Cui,Bishweshwor P. Rimal,Lin Xue,Otitoaleke G. Akinola,T. Patrick Xiao,Joseph S. Friedman,Christopher H. Bennett,Matthew J. Marinella,Jean Anne C. Incorvia###
(801935, 801935)
 Magnetic tunnel junction (MTJ) memory elements can be used forcomputation by manipulating a domain wall (D<missing VAR>W), a transition region betweenmagnetic domains.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[268.0, 164, '%', 3],[289.0, 2, ',', 3],[379.0, 7, '%', 5],[407.0, 96, '%', 5]

S
###Domain Wall-Magnetic Tunnel Junction Spin Orbit Torque Devices and Circuits for In-Memory Computing|Mahshid Alamdar,Thomas Leonard,Can Cui,Bishweshwor P. Rimal,Lin Xue,Otitoaleke G. Akinola,T. Patrick Xiao,Joseph S. Friedman,Christopher H. Bennett,Matthew J. Marinella,Jean Anne C. Incorvia###
(801976, 801976)
 But, these devices have suffered from challenges spintransfer torque (STT) switching of a D<missing VAR>W requires high current, and the multipleetch steps needed to create an MTJ pillar on top of a D<missing VAR>W track has led toreduced tunnel magnetoresistance (TMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[227.0, 164, '%', 2],[248.0, 2, ',', 2],[338.0, 7, '%', 4],[366.0, 96, '%', 4]

W
###Domain Wall-Magnetic Tunnel Junction Spin Orbit Torque Devices and Circuits for In-Memory Computing|Mahshid Alamdar,Thomas Leonard,Can Cui,Bishweshwor P. Rimal,Lin Xue,Otitoaleke G. Akinola,T. Patrick Xiao,Joseph S. Friedman,Christopher H. Bennett,Matthew J. Marinella,Jean Anne C. Incorvia###
(801988, 801988)
 But, these devices have suffered from challenges spintransfer torque (STT) switching of a D<missing VAR>W requires high current, and the multipleetch steps needed to create an MTJ pillar on top of a D<missing VAR>W track has led toreduced tunnel magnetoresistance (TMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[215.0, 164, '%', 2],[236.0, 2, ',', 2],[326.0, 7, '%', 4],[354.0, 96, '%', 4]

W
###Domain Wall-Magnetic Tunnel Junction Spin Orbit Torque Devices and Circuits for In-Memory Computing|Mahshid Alamdar,Thomas Leonard,Can Cui,Bishweshwor P. Rimal,Lin Xue,Otitoaleke G. Akinola,T. Patrick Xiao,Joseph S. Friedman,Christopher H. Bennett,Matthew J. Marinella,Jean Anne C. Incorvia###
(802031, 802031)
 But, these devices have suffered from challenges spintransfer torque (STT) switching of a D<missing VAR>W requires high current, and the multipleetch steps needed to create an MTJ pillar on top of a D<missing VAR>W track has led toreduced tunnel magnetoresistance (TMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[172.0, 164, '%', 2],[193.0, 2, ',', 2],[283.0, 7, '%', 4],[311.0, 96, '%', 4]

W
###Domain Wall-Magnetic Tunnel Junction Spin Orbit Torque Devices and Circuits for In-Memory Computing|Mahshid Alamdar,Thomas Leonard,Can Cui,Bishweshwor P. Rimal,Lin Xue,Otitoaleke G. Akinola,T. Patrick Xiao,Joseph S. Friedman,Christopher H. Bennett,Matthew J. Marinella,Jean Anne C. Incorvia###
(802105, 802105)
 Here, we study prototypes of three-terminaldomain wall-magnetic tunnel junction (D<missing VAR>W-MTJ) in-memory computing devices thatcan address data processing bottlenecks and resolve these challenges by usingperpendicular magnetic anisotropy (PM<missing VAR>A), spin-orbit torque (SOT) switching, andan optimized lithography process to produce average device tunnelmagnetoresistance TMR  164%, resistance-area product R<missing VAR>A  31Omega-mum<missing VAR>2, close to the R<missing VAR>A of the unpatterned film, and lower switchingcurrent density compared to using spin transfer torque.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 164, '%', 0],[119.0, 2, ',', 0],[209.0, 7, '%', 2],[237.0, 96, '%', 2]

P
###Domain Wall-Magnetic Tunnel Junction Spin Orbit Torque Devices and Circuits for In-Memory Computing|Mahshid Alamdar,Thomas Leonard,Can Cui,Bishweshwor P. Rimal,Lin Xue,Otitoaleke G. Akinola,T. Patrick Xiao,Joseph S. Friedman,Christopher H. Bennett,Matthew J. Marinella,Jean Anne C. Incorvia###
(802153, 802153)
 Here, we study prototypes of three-terminaldomain wall-magnetic tunnel junction (D<missing VAR>W-MTJ) in-memory computing devices thatcan address data processing bottlenecks and resolve these challenges by usingperpendicular magnetic anisotropy (PM<missing VAR>A), spin-orbit torque (SOT) switching, andan optimized lithography process to produce average device tunnelmagnetoresistance TMR  164%, resistance-area product R<missing VAR>A  31Omega-mum<missing VAR>2, close to the R<missing VAR>A of the unpatterned film, and lower switchingcurrent density compared to using spin transfer torque.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 164, '%', 0],[71.0, 2, ',', 0],[161.0, 7, '%', 2],[189.0, 96, '%', 2]

SO
###Domain Wall-Magnetic Tunnel Junction Spin Orbit Torque Devices and Circuits for In-Memory Computing|Mahshid Alamdar,Thomas Leonard,Can Cui,Bishweshwor P. Rimal,Lin Xue,Otitoaleke G. Akinola,T. Patrick Xiao,Joseph S. Friedman,Christopher H. Bennett,Matthew J. Marinella,Jean Anne C. Incorvia###
(802166, 802167)
 Here, we study prototypes of three-terminaldomain wall-magnetic tunnel junction (D<missing VAR>W-MTJ) in-memory computing devices thatcan address data processing bottlenecks and resolve these challenges by usingperpendicular magnetic anisotropy (PM<missing VAR>A), spin-orbit torque (SOT) switching, andan optimized lithography process to produce average device tunnelmagnetoresistance TMR  164%, resistance-area product R<missing VAR>A  31Omega-mum<missing VAR>2, close to the R<missing VAR>A of the unpatterned film, and lower switchingcurrent density compared to using spin transfer torque.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 164, '%', 0],[57.0, 2, ',', 0],[147.0, 7, '%', 2],[175.0, 96, '%', 2]

W
###Domain Wall-Magnetic Tunnel Junction Spin Orbit Torque Devices and Circuits for In-Memory Computing|Mahshid Alamdar,Thomas Leonard,Can Cui,Bishweshwor P. Rimal,Lin Xue,Otitoaleke G. Akinola,T. Patrick Xiao,Joseph S. Friedman,Christopher H. Bennett,Matthew J. Marinella,Jean Anne C. Incorvia###
(802324, 802324)
 Device initialization variation inswitching voltage is shown to be curtailed to 7% by controlling the D<missing VAR>W initialposition, which we show corresponds to 96% accuracy in a D<missing VAR>W-MTJ full addersimulation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 164, '%', 2],[100.0, 2, ',', 2],[10.0, 7, '%', 0],[18.0, 96, '%', 0]

W
###Domain Wall-Magnetic Tunnel Junction Spin Orbit Torque Devices and Circuits for In-Memory Computing|Mahshid Alamdar,Thomas Leonard,Can Cui,Bishweshwor P. Rimal,Lin Xue,Otitoaleke G. Akinola,T. Patrick Xiao,Joseph S. Friedman,Christopher H. Bennett,Matthew J. Marinella,Jean Anne C. Incorvia###
(802352, 802352)
 Device initialization variation inswitching voltage is shown to be curtailed to 7% by controlling the D<missing VAR>W initialposition, which we show corresponds to 96% accuracy in a D<missing VAR>W-MTJ full addersimulation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 164, '%', 2],[128.0, 2, ',', 2],[38.0, 7, '%', 0],[10.0, 96, '%', 0]

Bi2Te3
###Accessing topological surface states and negative MR in sculpted nanowires of Bi2Te3 at ultra-low temperature|Reena Yadav,Biplab Bhattacharyya,Animesh Pandey,Mandeep Kaur,R. P. Aloysius,Anurag Gupta,Sudhir Husale###
(802434, 802437)
Accessing topological surface states and negative MR in sculpted nanowires of Bi2Te3 at ultra-low temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 2, 'D', 1],[226.0, 1, 'T', 5],[266.0, 2, 'D', 6],[379.0, 2, 'K', 8]

W
###Accessing topological surface states and negative MR in sculpted nanowires of Bi2Te3 at ultra-low temperature|Reena Yadav,Biplab Bhattacharyya,Animesh Pandey,Mandeep Kaur,R. P. Aloysius,Anurag Gupta,Sudhir Husale###
(802546, 802546)
 Here we report temperature dependent weakantilocalization (WAL) effects in the sculpted nanowires of topologicalinsulator in the presence of perpendicular magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 2, 'D', 2],[117.0, 1, 'T', 2],[157.0, 2, 'D', 3],[270.0, 2, 'K', 5]

C
###Accessing topological surface states and negative MR in sculpted nanowires of Bi2Te3 at ultra-low temperature|Reena Yadav,Biplab Bhattacharyya,Animesh Pandey,Mandeep Kaur,R. P. Aloysius,Anurag Gupta,Sudhir Husale###
(802596, 802596)
 The quadratic andlinear magnetoconductivity (M<missing VAR>C) curves at low temperature indicate the bulkcontribution in the transport.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 2, 'D', 3],[67.0, 1, 'T', 1],[107.0, 2, 'D', 2],[220.0, 2, 'K', 4]

W
###Accessing topological surface states and negative MR in sculpted nanowires of Bi2Te3 at ultra-low temperature|Reena Yadav,Biplab Bhattacharyya,Animesh Pandey,Mandeep Kaur,R. P. Aloysius,Anurag Gupta,Sudhir Husale###
(802669, 802669)
 A cusp feature in magnetoconductivity curves(positive magnetoresistance) at ultra low temperature and at magnetic field,less than 1T represent the WAL<missing VAR> indicating the transport through surface states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[218.0, 2, 'D', 4],[6.0, 1, 'T', 0],[34.0, 2, 'D', 1],[147.0, 2, 'K', 3]

C
###Accessing topological surface states and negative MR in sculpted nanowires of Bi2Te3 at ultra-low temperature|Reena Yadav,Biplab Bhattacharyya,Animesh Pandey,Mandeep Kaur,R. P. Aloysius,Anurag Gupta,Sudhir Husale###
(802690, 802690)
The M<missing VAR>C curves are discussed by using the 2D Hikami Larkin Nagaoka theory.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[239.0, 2, 'D', 5],[27.0, 1, 'T', 1],[13.0, 2, 'D', 0],[126.0, 2, 'K', 2]

S
###Accessing topological surface states and negative MR in sculpted nanowires of Bi2Te3 at ultra-low temperature|Reena Yadav,Biplab Bhattacharyya,Animesh Pandey,Mandeep Kaur,R. P. Aloysius,Anurag Gupta,Sudhir Husale###
(802776, 802776)
 Our results indicate that transportthrough topological surface states (T<missing VAR>SS) in sculpted nanowires of Bi2Te3 can beachieved at m<missing VAR>K range and linear MR observed at 2 K could be the coexistence ofelectron transport through T<missing VAR>SS and contribution from the bulk band.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[325.0, 2, 'D', 7],[113.0, 1, 'T', 3],[73.0, 2, 'D', 2],[40.0, 2, 'K', 0]

Bi2Te3
###Accessing topological surface states and negative MR in sculpted nanowires of Bi2Te3 at ultra-low temperature|Reena Yadav,Biplab Bhattacharyya,Animesh Pandey,Mandeep Kaur,R. P. Aloysius,Anurag Gupta,Sudhir Husale###
(802787, 802790)
 Our results indicate that transportthrough topological surface states (T<missing VAR>SS) in sculpted nanowires of Bi2Te3 can beachieved at m<missing VAR>K range and linear MR observed at 2 K could be the coexistence ofelectron transport through T<missing VAR>SS and contribution from the bulk band.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[336.0, 2, 'D', 7],[124.0, 1, 'T', 3],[84.0, 2, 'D', 2],[26.0, 2, 'K', 0]

K
###Accessing topological surface states and negative MR in sculpted nanowires of Bi2Te3 at ultra-low temperature|Reena Yadav,Biplab Bhattacharyya,Animesh Pandey,Mandeep Kaur,R. P. Aloysius,Anurag Gupta,Sudhir Husale###
(802802, 802802)
 Our results indicate that transportthrough topological surface states (T<missing VAR>SS) in sculpted nanowires of Bi2Te3 can beachieved at m<missing VAR>K range and linear MR observed at 2 K could be the coexistence ofelectron transport through T<missing VAR>SS and contribution from the bulk band.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[351.0, 2, 'D', 7],[139.0, 1, 'T', 3],[99.0, 2, 'D', 2],[14.0, 2, 'K', 0]

SS
###Accessing topological surface states and negative MR in sculpted nanowires of Bi2Te3 at ultra-low temperature|Reena Yadav,Biplab Bhattacharyya,Animesh Pandey,Mandeep Kaur,R. P. Aloysius,Anurag Gupta,Sudhir Husale###
(802836, 802837)
 Our results indicate that transportthrough topological surface states (T<missing VAR>SS) in sculpted nanowires of Bi2Te3 can beachieved at m<missing VAR>K range and linear MR observed at 2 K could be the coexistence ofelectron transport through T<missing VAR>SS and contribution from the bulk band.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[385.0, 2, 'D', 7],[173.0, 1, 'T', 3],[133.0, 2, 'D', 2],[20.0, 2, 'K', 0]

K1-xV3Sb5
###Anisotropic proximity-induced superconductivity and edge supercurrent in Kagome metal, K1-xV3Sb5|Yaojia Wang,Shuoying Yang,Pranava K. Sivakumar,Brenden R. Ortiz,Samuel M. L. Teicher,Heng Wu,Abhay K. Srivastava,Chirag Garg,Defa Liu,Stuart S. P. Parkin,Eric S. Toberer,Tyrel McQueen,Stephen D. Wilson,Mazhar N. Ali###
(802881, 802888)
Anisotropic proximity-induced superconductivity and edge supercurrent in Kagome metal, K1-xV3Sb5.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

Fe3Sn2
###Anisotropic proximity-induced superconductivity and edge supercurrent in Kagome metal, K1-xV3Sb5|Yaojia Wang,Shuoying Yang,Pranava K. Sivakumar,Brenden R. Ortiz,Samuel M. L. Teicher,Heng Wu,Abhay K. Srivastava,Chirag Garg,Defa Liu,Stuart S. P. Parkin,Eric S. Toberer,Tyrel McQueen,Stephen D. Wilson,Mazhar N. Ali###
(802987, 802990)
 Kagome nets are of particular importance since thediscovery of geometrically frustrated magnetism and topological band structuresin crystals like Herbertsmithite and Fe3Sn2, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

KV3Sb5
###Anisotropic proximity-induced superconductivity and edge supercurrent in Kagome metal, K1-xV3Sb5|Yaojia Wang,Shuoying Yang,Pranava K. Sivakumar,Brenden R. Ortiz,Samuel M. L. Teicher,Heng Wu,Abhay K. Srivastava,Chirag Garg,Defa Liu,Stuart S. P. Parkin,Eric S. Toberer,Tyrel McQueen,Stephen D. Wilson,Mazhar N. Ali###
(802996, 803000)
 KV3Sb5 wasdiscovered to be a layered topological metal with a Kagome net of vanadium.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1111111111111111,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5555555555555556,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K1-xV3Sb5
###Anisotropic proximity-induced superconductivity and edge supercurrent in Kagome metal, K1-xV3Sb5|Yaojia Wang,Shuoying Yang,Pranava K. Sivakumar,Brenden R. Ortiz,Samuel M. L. Teicher,Heng Wu,Abhay K. Srivastava,Chirag Garg,Defa Liu,Stuart S. P. Parkin,Eric S. Toberer,Tyrel McQueen,Stephen D. Wilson,Mazhar N. Ali###
(803051, 803058)
Here, we fabricated Josephson Junctions (JJ) of K1-xV3Sb5 and inducedsuperconductivity over long junction lengths.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

K1-xV3Sb5
###Anisotropic proximity-induced superconductivity and edge supercurrent in Kagome metal, K1-xV3Sb5|Yaojia Wang,Shuoying Yang,Pranava K. Sivakumar,Brenden R. Ortiz,Samuel M. L. Teicher,Heng Wu,Abhay K. Srivastava,Chirag Garg,Defa Liu,Stuart S. P. Parkin,Eric S. Toberer,Tyrel McQueen,Stephen D. Wilson,Mazhar N. Ali###
(803186, 803193)
 These results indicate an anisotropicinternal magnetic field in K1-xV3Sb5 which influences the superconductingcoupling in the junction, possibly giving rise to spin-tripletsuperconductivity.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

In
###Anisotropic proximity-induced superconductivity and edge supercurrent in Kagome metal, K1-xV3Sb5|Yaojia Wang,Shuoying Yang,Pranava K. Sivakumar,Brenden R. Ortiz,Samuel M. L. Teicher,Heng Wu,Abhay K. Srivastava,Chirag Garg,Defa Liu,Stuart S. P. Parkin,Eric S. Toberer,Tyrel McQueen,Stephen D. Wilson,Mazhar N. Ali###
(803229, 803229)
 In addition, the observation of long-lived fast oscillationsshows evidence of spatially localized conducting channels arising from edgestates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###Magnetic Field Effects on the Transport Properties of High-Tc Cuprates|E. C. Marino,R. Arouca###
(803344, 803344)
Magnetic Field Effects on the Transport Properties of High-Tc Cuprates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###Magnetic Field Effects on the Transport Properties of High-Tc Cuprates|E. C. Marino,R. Arouca###
(803369, 803369)
 Starting from a recently proposed comprehensive theory for the high-Tcsuperconductivity in cuprates, we derive a general analytic expression for theplanar resistivity, in the presence of an applied external magnetic fieldtextbfH and explore its consequences in the different phases of thesematerials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Magnetic Field Effects on the Transport Properties of High-Tc Cuprates|E. C. Marino,R. Arouca###
(803421, 803421)
 Starting from a recently proposed comprehensive theory for the high-Tcsuperconductivity in cuprates, we derive a general analytic expression for theplanar resistivity, in the presence of an applied external magnetic fieldtextbfH and explore its consequences in the different phases of thesematerials.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Magnetic Field Effects on the Transport Properties of High-Tc Cuprates|E. C. Marino,R. Arouca###
(803447, 803447)
 As an initial probe of our result, we show it compares very wellwith experimental data for the resistivity of L<missing VAR>SCO at different values of theapplied field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SCO
###Magnetic Field Effects on the Transport Properties of High-Tc Cuprates|E. C. Marino,R. Arouca###
(803490, 803492)
 As an initial probe of our result, we show it compares very wellwith experimental data for the resistivity of L<missing VAR>SCO at different values of theapplied field.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2201
###Magnetic Field Effects on the Transport Properties of High-Tc Cuprates|E. C. Marino,R. Arouca###
(803522, 803523)
 We also apply our result to Bi2201 and show that themagnetoresistivity in the strange metal phase of this material, exhibits theH2 to H crossover, as we move from the weak to the strong field regime.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H2
###Magnetic Field Effects on the Transport Properties of High-Tc Cuprates|E. C. Marino,R. Arouca###
(803558, 803559)
 We also apply our result to Bi2201 and show that themagnetoresistivity in the strange metal phase of this material, exhibits theH2 to H crossover, as we move from the weak to the strong field regime.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Magnetic Field Effects on the Transport Properties of High-Tc Cuprates|E. C. Marino,R. Arouca###
(803563, 803563)
 We also apply our result to Bi2201 and show that themagnetoresistivity in the strange metal phase of this material, exhibits theH2 to H crossover, as we move from the weak to the strong field regime.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Magnetic Field Effects on the Transport Properties of High-Tc Cuprates|E. C. Marino,R. Arouca###
(803627, 803627)
 Remarkably, the resistivity H-field derivative does scale as afunction of fracHT<missing VAR>, in complete agreement with recent magneto-transportmeasurements made in the strange metal phase of cuprates citeHussey2020.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Magnetic Field Effects on the Transport Properties of High-Tc Cuprates|E. C. Marino,R. Arouca###
(803647, 803647)
 Remarkably, the resistivity H-field derivative does scale as afunction of fracHT<missing VAR>, in complete agreement with recent magneto-transportmeasurements made in the strange metal phase of cuprates citeHussey2020.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tl2201
###Magnetic Field Effects on the Transport Properties of High-Tc Cuprates|E. C. Marino,R. Arouca###
(803744, 803745)
 We,finally, address the issue of the T<missing VAR>-power-law dependence of the resistivityof overdoped cuprates and compare our results with experimental data forTl2201.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SC
###Magnetic Field Effects on the Transport Properties of High-Tc Cuprates|E. C. Marino,R. Arouca###
(803801, 803802)
 We show that this provides a simple method to determine whether thequantum critical point associated to the pseudogap temperature T(x) belongsto the SC dome or not.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Colossal Magnetoresistance without Mixed Valence in a Layered Phosphide Crystal|Zhi-Cheng Wang,Jared D. Rogers,Xiaohan Yao,Renee Nichols,Kemal Atay,Bochao Xu,Jacob Franklin,Ilya Sochnikov,Philip J. Ryan,Daniel Haskel,Fazel Tafti###
(803920, 803920)
 Among them, manganeseoxides with a mixed valence and a cubic perovskite structure stand out due totheir colossal magnetoresistance (CMR).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 11, 'K', 4]

C
###Colossal Magnetoresistance without Mixed Valence in a Layered Phosphide Crystal|Zhi-Cheng Wang,Jared D. Rogers,Xiaohan Yao,Renee Nichols,Kemal Atay,Bochao Xu,Jacob Franklin,Ilya Sochnikov,Philip J. Ryan,Daniel Haskel,Fazel Tafti###
(803939, 803939)
 A double exchange interaction underliesthe CMR in manganates, whereby charge transport is enhanced when the spins onneighboring Mn3 and Mn4 ions are parallel.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[159.0, 11, 'K', 3]

Mn3
###Colossal Magnetoresistance without Mixed Valence in a Layered Phosphide Crystal|Zhi-Cheng Wang,Jared D. Rogers,Xiaohan Yao,Renee Nichols,Kemal Atay,Bochao Xu,Jacob Franklin,Ilya Sochnikov,Philip J. Ryan,Daniel Haskel,Fazel Tafti###
(803969, 803970)
 A double exchange interaction underliesthe CMR in manganates, whereby charge transport is enhanced when the spins onneighboring Mn3 and Mn4 ions are parallel.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 11, 'K', 3]

Mn4
###Colossal Magnetoresistance without Mixed Valence in a Layered Phosphide Crystal|Zhi-Cheng Wang,Jared D. Rogers,Xiaohan Yao,Renee Nichols,Kemal Atay,Bochao Xu,Jacob Franklin,Ilya Sochnikov,Philip J. Ryan,Daniel Haskel,Fazel Tafti###
(803974, 803975)
 A double exchange interaction underliesthe CMR in manganates, whereby charge transport is enhanced when the spins onneighboring Mn3 and Mn4 ions are parallel.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 11, 'K', 3]

C
###Colossal Magnetoresistance without Mixed Valence in a Layered Phosphide Crystal|Zhi-Cheng Wang,Jared D. Rogers,Xiaohan Yao,Renee Nichols,Kemal Atay,Bochao Xu,Jacob Franklin,Ilya Sochnikov,Philip J. Ryan,Daniel Haskel,Fazel Tafti###
(804003, 804003)
 Prior efforts to find differentmaterials or mechanisms for CMR resulted in a much smaller effect.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 11, 'K', 2]

C
###Colossal Magnetoresistance without Mixed Valence in a Layered Phosphide Crystal|Zhi-Cheng Wang,Jared D. Rogers,Xiaohan Yao,Renee Nichols,Kemal Atay,Bochao Xu,Jacob Franklin,Ilya Sochnikov,Philip J. Ryan,Daniel Haskel,Fazel Tafti###
(804031, 804031)
 Here we showan enormous CMR at low temperatures in EuCd2P2 without manganese, oxygen, mixedvalence, or cubic perovskite structure.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 11, 'K', 1]

EuCd2P2
###Colossal Magnetoresistance without Mixed Valence in a Layered Phosphide Crystal|Zhi-Cheng Wang,Jared D. Rogers,Xiaohan Yao,Renee Nichols,Kemal Atay,Bochao Xu,Jacob Franklin,Ilya Sochnikov,Philip J. Ryan,Daniel Haskel,Fazel Tafti###
(804043, 804047)
 Here we showan enormous CMR at low temperatures in EuCd2P2 without manganese, oxygen, mixedvalence, or cubic perovskite structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 11, 'K', 1]

EuCd2P2
###Colossal Magnetoresistance without Mixed Valence in a Layered Phosphide Crystal|Zhi-Cheng Wang,Jared D. Rogers,Xiaohan Yao,Renee Nichols,Kemal Atay,Bochao Xu,Jacob Franklin,Ilya Sochnikov,Philip J. Ryan,Daniel Haskel,Fazel Tafti###
(804072, 804076)
 EuCd2P2 has a layered trigonal latticeand exhibits antiferromagnetic ordering at 11 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 11, 'K', 0]

C
###Colossal Magnetoresistance without Mixed Valence in a Layered Phosphide Crystal|Zhi-Cheng Wang,Jared D. Rogers,Xiaohan Yao,Renee Nichols,Kemal Atay,Bochao Xu,Jacob Franklin,Ilya Sochnikov,Philip J. Ryan,Daniel Haskel,Fazel Tafti###
(804107, 804107)
 The magnitude of CMR (104percent) in as-grown crystals of EuCd2P2 rivals the magnitude in optimized thinfilms of manganates.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 11, 'K', 1]

EuCd2P2
###Colossal Magnetoresistance without Mixed Valence in a Layered Phosphide Crystal|Zhi-Cheng Wang,Jared D. Rogers,Xiaohan Yao,Renee Nichols,Kemal Atay,Bochao Xu,Jacob Franklin,Ilya Sochnikov,Philip J. Ryan,Daniel Haskel,Fazel Tafti###
(804128, 804132)
 The magnitude of CMR (104percent) in as-grown crystals of EuCd2P2 rivals the magnitude in optimized thinfilms of manganates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 11, 'K', 1]

C
###Colossal Magnetoresistance without Mixed Valence in a Layered Phosphide Crystal|Zhi-Cheng Wang,Jared D. Rogers,Xiaohan Yao,Renee Nichols,Kemal Atay,Bochao Xu,Jacob Franklin,Ilya Sochnikov,Philip J. Ryan,Daniel Haskel,Fazel Tafti###
(804201, 804201)
The realization of CMR at low temperatures without heterovalency leads to a newregime for materials and technologies related to antiferromagnetic spintronics.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 11, 'K', 3]

SrIrO3
###Low temperature ferromagnetism in perovskite SrIrO$_3$ films|Rachna Chaurasia,K. Asokan,Kranti Kumar,A. K. Pramanik###
(804261, 804264)
Low temperature ferromagnetism in perovskite SrIrO3 films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 40, 'nm', 3],[185.0, 20, 'K', 4],[243.0, 2, 'K', 6],[282.0, 20, 'K', 7]

SrIrO3
###Low temperature ferromagnetism in perovskite SrIrO$_3$ films|Rachna Chaurasia,K. Asokan,Kranti Kumar,A. K. Pramanik###
(804276, 804279)
 The 5d<missing VAR> based SrIrO3 represents prototype example of nonmagneticcorrelated metal which mainly originates from a combined effect of spin-orbitcoupling, lattice dimensionality and crystal structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 40, 'nm', 2],[170.0, 20, 'K', 3],[228.0, 2, 'K', 5],[267.0, 20, 'K', 6]

SrIrO3
###Low temperature ferromagnetism in perovskite SrIrO$_3$ films|Rachna Chaurasia,K. Asokan,Kranti Kumar,A. K. Pramanik###
(804388, 804391)
 Here,we study the structural, magnetic and electrical transport behavior inepitaxial SrIrO3 film (sim 40 nm) grown on SrTiO3 substrate.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 40, 'nm', 0],[58.0, 20, 'K', 1],[116.0, 2, 'K', 3],[155.0, 20, 'K', 4]

SrTiO3
###Low temperature ferromagnetism in perovskite SrIrO$_3$ films|Rachna Chaurasia,K. Asokan,Kranti Kumar,A. K. Pramanik###
(804404, 804407)
 Here,we study the structural, magnetic and electrical transport behavior inepitaxial SrIrO3 film (sim 40 nm) grown on SrTiO3 substrate.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 40, 'nm', 0],[42.0, 20, 'K', 1],[100.0, 2, 'K', 3],[139.0, 20, 'K', 4]

SrIrO3
###Low temperature ferromagnetism in perovskite SrIrO$_3$ films|Rachna Chaurasia,K. Asokan,Kranti Kumar,A. K. Pramanik###
(804424, 804427)
 Opposedto bulk material, the SrIrO3 film exhibits a ferromagnetic ordering at lowtemperature below sim 20 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 40, 'nm', 1],[22.0, 20, 'K', 0],[80.0, 2, 'K', 2],[119.0, 20, 'K', 3]

SrIrO3
###Low temperature ferromagnetism in perovskite SrIrO$_3$ films|Rachna Chaurasia,K. Asokan,Kranti Kumar,A. K. Pramanik###
(804696, 804699)
 We believe that anenhanced (local) structural distortion caused by lattice strain at lowtemperatures induces ferromagnetic ordering, thus showing structuralinstability plays vital role to tune the physical properties in SrIrO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[299.0, 40, 'nm', 6],[247.0, 20, 'K', 5],[189.0, 2, 'K', 3],[150.0, 20, 'K', 2]

TaPtTe5
###Anisotropic transport and de Haas$-$van Alphen oscillations in quasi-one-dimensional TaPtTe$_5$|Wen-He Jiao,Shaozhu Xiao,Bin Li,Chunqiang Xu,Xiao-Meng Xie,Hang-Qiang Qiu,Xiaofeng Xu,Yi Liu,Shi-Jie Song,Wei Zhou,Hui-Fei Zhai,X. Ke,Shaolong He,Guang-Han Cao###
(804734, 804737)
Anisotropic transport and de Haas-van Alphen oscillations in quasi-one-dimensional TaPtTe5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7142857142857143,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[275.0, 95.2, 'T', 5]

TaPtTe5
###Anisotropic transport and de Haas$-$van Alphen oscillations in quasi-one-dimensional TaPtTe$_5$|Wen-He Jiao,Shaozhu Xiao,Bin Li,Chunqiang Xu,Xiao-Meng Xie,Hang-Qiang Qiu,Xiaofeng Xu,Yi Liu,Shi-Jie Song,Wei Zhou,Hui-Fei Zhai,X. Ke,Shaolong He,Guang-Han Cao###
(804912, 804915)
 Here we report onanisotropic magnetoresistance, Hall effect, and quantum de Haas-van Alphen(d<missing VAR>HvA) oscillations in TaPtTe5 single crystals, which possess a layeredcrystal structure with quasi-1D<missing VAR> PtTe2 chains.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7142857142857143,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 95.2, 'T', 2]

PtTe2
###Anisotropic transport and de Haas$-$van Alphen oscillations in quasi-one-dimensional TaPtTe$_5$|Wen-He Jiao,Shaozhu Xiao,Bin Li,Chunqiang Xu,Xiao-Meng Xie,Hang-Qiang Qiu,Xiaofeng Xu,Yi Liu,Shi-Jie Song,Wei Zhou,Hui-Fei Zhai,X. Ke,Shaolong He,Guang-Han Cao###
(804942, 804944)
 Here we report onanisotropic magnetoresistance, Hall effect, and quantum de Haas-van Alphen(d<missing VAR>HvA) oscillations in TaPtTe5 single crystals, which possess a layeredcrystal structure with quasi-1D<missing VAR> PtTe2 chains.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 95.2, 'T', 2]

TaPtTe5
###Anisotropic transport and de Haas$-$van Alphen oscillations in quasi-one-dimensional TaPtTe$_5$|Wen-He Jiao,Shaozhu Xiao,Bin Li,Chunqiang Xu,Xiao-Meng Xie,Hang-Qiang Qiu,Xiaofeng Xu,Yi Liu,Shi-Jie Song,Wei Zhou,Hui-Fei Zhai,X. Ke,Shaolong He,Guang-Han Cao###
(804949, 804952)
 TaPtTe5 manifests ananisotropic magnetoresistance and a nonlinear Hall effect at low temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7142857142857143,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 95.2, 'T', 1]

TaPtTe5
###Anisotropic transport and de Haas$-$van Alphen oscillations in quasi-one-dimensional TaPtTe$_5$|Wen-He Jiao,Shaozhu Xiao,Bin Li,Chunqiang Xu,Xiao-Meng Xie,Hang-Qiang Qiu,Xiaofeng Xu,Yi Liu,Shi-Jie Song,Wei Zhou,Hui-Fei Zhai,X. Ke,Shaolong He,Guang-Han Cao###
(805049, 805052)
 The corresponding light effective masses and the nonzeroBerry phases suggest the nontrivial band topology in TaPtTe5, which isfurther corroborated by the first-principles calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7142857142857143,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 95.2, 'T', 1]

TaPtTe5
###Anisotropic transport and de Haas$-$van Alphen oscillations in quasi-one-dimensional TaPtTe$_5$|Wen-He Jiao,Shaozhu Xiao,Bin Li,Chunqiang Xu,Xiao-Meng Xie,Hang-Qiang Qiu,Xiaofeng Xu,Yi Liu,Shi-Jie Song,Wei Zhou,Hui-Fei Zhai,X. Ke,Shaolong He,Guang-Han Cao###
(805084, 805087)
 Our results suggestthat TaPtTe5, in analogy with its sister compounds TaPdTe5 andTaNiTe5, is another quasi-1D<missing VAR> material hosting topological Dirac fermions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7142857142857143,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 95.2, 'T', 2]

TaPdTe5
###Anisotropic transport and de Haas$-$van Alphen oscillations in quasi-one-dimensional TaPtTe$_5$|Wen-He Jiao,Shaozhu Xiao,Bin Li,Chunqiang Xu,Xiao-Meng Xie,Hang-Qiang Qiu,Xiaofeng Xu,Yi Liu,Shi-Jie Song,Wei Zhou,Hui-Fei Zhai,X. Ke,Shaolong He,Guang-Han Cao###
(805102, 805105)
 Our results suggestthat TaPtTe5, in analogy with its sister compounds TaPdTe5 andTaNiTe5, is another quasi-1D<missing VAR> material hosting topological Dirac fermions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0.7142857142857143,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 95.2, 'T', 2]

TaNiTe5
###Anisotropic transport and de Haas$-$van Alphen oscillations in quasi-one-dimensional TaPtTe$_5$|Wen-He Jiao,Shaozhu Xiao,Bin Li,Chunqiang Xu,Xiao-Meng Xie,Hang-Qiang Qiu,Xiaofeng Xu,Yi Liu,Shi-Jie Song,Wei Zhou,Hui-Fei Zhai,X. Ke,Shaolong He,Guang-Han Cao###
(805110, 805113)
 Our results suggestthat TaPtTe5, in analogy with its sister compounds TaPdTe5 andTaNiTe5, is another quasi-1D<missing VAR> material hosting topological Dirac fermions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7142857142857143,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 95.2, 'T', 2]

ReO3
###Extremely large magnetoresistance in the "ordinary" metal ReO3|Qin Chen,Zhefeng Lou,ShengNan Zhang,Yuxing Zhou,Binjie Xu,Huancheng Chen,Shuijin Chen,Jianhua Du,Hangdong Wang,Jinhu Yang,QuanSheng Wu,Oleg V. Yazyev,Minghu Fang###
(805600, 805602)
Extremely large magnetoresistance in the ordinary metal ReO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[391.0, 3, '%', 5]

In
###Extremely large magnetoresistance in the "ordinary" metal ReO3|Qin Chen,Zhefeng Lou,ShengNan Zhang,Yuxing Zhou,Binjie Xu,Huancheng Chen,Shuijin Chen,Jianhua Du,Hangdong Wang,Jinhu Yang,QuanSheng Wu,Oleg V. Yazyev,Minghu Fang###
(805660, 805660)
 In this paper, by combining the bandstructure and Fermi surface (FS) calculations with the Hall resistivity and deHaas-Van Alphen (d<missing VAR>HvA) oscillation measurements, we studied the anisotropy ofmagnetoresistance (MR) of ReO3 with a simple cubic structure, an ordinarynonmagnetic metal considered previously.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[333.0, 3, '%', 3]

(FS)
###Extremely large magnetoresistance in the "ordinary" metal ReO3|Qin Chen,Zhefeng Lou,ShengNan Zhang,Yuxing Zhou,Binjie Xu,Huancheng Chen,Shuijin Chen,Jianhua Du,Hangdong Wang,Jinhu Yang,QuanSheng Wu,Oleg V. Yazyev,Minghu Fang###
(805684, 805687)
 In this paper, by combining the bandstructure and Fermi surface (FS) calculations with the Hall resistivity and deHaas-Van Alphen (d<missing VAR>HvA) oscillation measurements, we studied the anisotropy ofmagnetoresistance (MR) of ReO3 with a simple cubic structure, an ordinarynonmagnetic metal considered previously.
Featurization successful!
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[306.0, 3, '%', 3]

ReO3
###Extremely large magnetoresistance in the "ordinary" metal ReO3|Qin Chen,Zhefeng Lou,ShengNan Zhang,Yuxing Zhou,Binjie Xu,Huancheng Chen,Shuijin Chen,Jianhua Du,Hangdong Wang,Jinhu Yang,QuanSheng Wu,Oleg V. Yazyev,Minghu Fang###
(805741, 805743)
 In this paper, by combining the bandstructure and Fermi surface (FS) calculations with the Hall resistivity and deHaas-Van Alphen (d<missing VAR>HvA) oscillation measurements, we studied the anisotropy ofmagnetoresistance (MR) of ReO3 with a simple cubic structure, an ordinarynonmagnetic metal considered previously.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[250.0, 3, '%', 3]

ReO3
###Extremely large magnetoresistance in the "ordinary" metal ReO3|Qin Chen,Zhefeng Lou,ShengNan Zhang,Yuxing Zhou,Binjie Xu,Huancheng Chen,Shuijin Chen,Jianhua Du,Hangdong Wang,Jinhu Yang,QuanSheng Wu,Oleg V. Yazyev,Minghu Fang###
(805776, 805778)
 We found that ReO3 exhibits almostall the characteristics of XMR semimetals the nearly quadratic fielddependence of MR, a field-induced upturn in resistivity followed by a plateauat low temperatures, high mobilities of charge carriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[215.0, 3, '%', 2]

H
###Extremely large magnetoresistance in the "ordinary" metal ReO3|Qin Chen,Zhefeng Lou,ShengNan Zhang,Yuxing Zhou,Binjie Xu,Huancheng Chen,Shuijin Chen,Jianhua Du,Hangdong Wang,Jinhu Yang,QuanSheng Wu,Oleg V. Yazyev,Minghu Fang###
(805871, 805871)
 It was found that formagnetic field emphH applied along the emphc<missing VAR> axis, the MR exhibits anunsaturated emphH1.75 dependence, which was argued to arise from thecomplete carrier compensation supported by the Hall resistivity measurements.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 3, '%', 1]

H1.75
###Extremely large magnetoresistance in the "ordinary" metal ReO3|Qin Chen,Zhefeng Lou,ShengNan Zhang,Yuxing Zhou,Binjie Xu,Huancheng Chen,Shuijin Chen,Jianhua Du,Hangdong Wang,Jinhu Yang,QuanSheng Wu,Oleg V. Yazyev,Minghu Fang###
(805898, 805899)
 It was found that formagnetic field emphH applied along the emphc<missing VAR> axis, the MR exhibits anunsaturated emphH1.75 dependence, which was argued to arise from thecomplete carrier compensation supported by the Hall resistivity measurements.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 3, '%', 1]

H
###Extremely large magnetoresistance in the "ordinary" metal ReO3|Qin Chen,Zhefeng Lou,ShengNan Zhang,Yuxing Zhou,Binjie Xu,Huancheng Chen,Shuijin Chen,Jianhua Du,Hangdong Wang,Jinhu Yang,QuanSheng Wu,Oleg V. Yazyev,Minghu Fang###
(805942, 805942)
For emphH applied along the direction of 15circ relative to the emphc<missing VAR>axis, an unsaturated emphH1.90 dependence of MR up to9.43times103% at 10K and 9T<missing VAR> was observed, which was explained bythe existence of electron open orbits extending along the kx direction.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 3, '%', 0]

H1.90
###Extremely large magnetoresistance in the "ordinary" metal ReO3|Qin Chen,Zhefeng Lou,ShengNan Zhang,Yuxing Zhou,Binjie Xu,Huancheng Chen,Shuijin Chen,Jianhua Du,Hangdong Wang,Jinhu Yang,QuanSheng Wu,Oleg V. Yazyev,Minghu Fang###
(805975, 805976)
For emphH applied along the direction of 15circ relative to the emphc<missing VAR>axis, an unsaturated emphH1.90 dependence of MR up to9.43times103% at 10K and 9T<missing VAR> was observed, which was explained bythe existence of electron open orbits extending along the kx direction.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 3, '%', 0]

K
###Extremely large magnetoresistance in the "ordinary" metal ReO3|Qin Chen,Zhefeng Lou,ShengNan Zhang,Yuxing Zhou,Binjie Xu,Huancheng Chen,Shuijin Chen,Jianhua Du,Hangdong Wang,Jinhu Yang,QuanSheng Wu,Oleg V. Yazyev,Minghu Fang###
(805999, 805999)
For emphH applied along the direction of 15circ relative to the emphc<missing VAR>axis, an unsaturated emphH1.90 dependence of MR up to9.43times103% at 10K and 9T<missing VAR> was observed, which was explained bythe existence of electron open orbits extending along the kx direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 3, '%', 0]

ReO3
###Extremely large magnetoresistance in the "ordinary" metal ReO3|Qin Chen,Zhefeng Lou,ShengNan Zhang,Yuxing Zhou,Binjie Xu,Huancheng Chen,Shuijin Chen,Jianhua Du,Hangdong Wang,Jinhu Yang,QuanSheng Wu,Oleg V. Yazyev,Minghu Fang###
(806080, 806082)
Two mechanisms responsible for XMR observed usually in the semimetals occuralso in the simple metal ReO3 due to its peculiar FS (two closed electronpockets and one open electron pocket), once again indicating that the detailsof FS topology are a key factor for the observed XMR in materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 3, '%', 1]

FS
###Extremely large magnetoresistance in the "ordinary" metal ReO3|Qin Chen,Zhefeng Lou,ShengNan Zhang,Yuxing Zhou,Binjie Xu,Huancheng Chen,Shuijin Chen,Jianhua Du,Hangdong Wang,Jinhu Yang,QuanSheng Wu,Oleg V. Yazyev,Minghu Fang###
(806092, 806093)
Two mechanisms responsible for XMR observed usually in the semimetals occuralso in the simple metal ReO3 due to its peculiar FS (two closed electronpockets and one open electron pocket), once again indicating that the detailsof FS topology are a key factor for the observed XMR in materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 3, '%', 1]

FS
###Extremely large magnetoresistance in the "ordinary" metal ReO3|Qin Chen,Zhefeng Lou,ShengNan Zhang,Yuxing Zhou,Binjie Xu,Huancheng Chen,Shuijin Chen,Jianhua Du,Hangdong Wang,Jinhu Yang,QuanSheng Wu,Oleg V. Yazyev,Minghu Fang###
(806132, 806133)
Two mechanisms responsible for XMR observed usually in the semimetals occuralso in the simple metal ReO3 due to its peculiar FS (two closed electronpockets and one open electron pocket), once again indicating that the detailsof FS topology are a key factor for the observed XMR in materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 3, '%', 1]

H
###Bipolar conduction and giant positive magnetoresistance in doped metallic titanium oxide heterostructures|Ke Huang,Tao Wang,Mengjia Jin,Liang Wu,Junyao Floria Wang,Shengyao Li,Dong-chen Qi,Shuying Cheng,Yangyang Li,Jingsheng Chen,Xiaozhong He,Changjian Li,Stephen J. Pennycook,X. Renshaw Wang###
(806278, 806278)
 H, D<missing VAR>, and Li,attract enormous attention in creating emergent functionalities, such assuperconductivity, and metal-insulator transition.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[236.0, 900, '%', 4],[240.0, 6, 'T', 4]

Li
###Bipolar conduction and giant positive magnetoresistance in doped metallic titanium oxide heterostructures|Ke Huang,Tao Wang,Mengjia Jin,Liang Wu,Junyao Floria Wang,Shengyao Li,Dong-chen Qi,Shuying Cheng,Yangyang Li,Jingsheng Chen,Xiaozhong He,Changjian Li,Stephen J. Pennycook,X. Renshaw Wang###
(806286, 806286)
 H, D<missing VAR>, and Li,attract enormous attention in creating emergent functionalities, such assuperconductivity, and metal-insulator transition.
Featurization terminated normally.
0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[228.0, 900, '%', 4],[232.0, 6, 'T', 4]

Ti
###Bipolar conduction and giant positive magnetoresistance in doped metallic titanium oxide heterostructures|Ke Huang,Tao Wang,Mengjia Jin,Liang Wu,Junyao Floria Wang,Shengyao Li,Dong-chen Qi,Shuying Cheng,Yangyang Li,Jingsheng Chen,Xiaozhong He,Changjian Li,Stephen J. Pennycook,X. Renshaw Wang###
(806361, 806361)
 Here, we report anobservation of bipolar conduction accompanied by a giant positivemagnetoresistance in D<missing VAR>-doped metallic Ti oxide (TiOxDy) films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 900, '%', 3],[157.0, 6, 'T', 3]

Ti
###Bipolar conduction and giant positive magnetoresistance in doped metallic titanium oxide heterostructures|Ke Huang,Tao Wang,Mengjia Jin,Liang Wu,Junyao Floria Wang,Shengyao Li,Dong-chen Qi,Shuying Cheng,Yangyang Li,Jingsheng Chen,Xiaozhong He,Changjian Li,Stephen J. Pennycook,X. Renshaw Wang###
(806366, 806366)
 Here, we report anobservation of bipolar conduction accompanied by a giant positivemagnetoresistance in D<missing VAR>-doped metallic Ti oxide (TiOxDy) films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 900, '%', 3],[152.0, 6, 'T', 3]

Dy
###Bipolar conduction and giant positive magnetoresistance in doped metallic titanium oxide heterostructures|Ke Huang,Tao Wang,Mengjia Jin,Liang Wu,Junyao Floria Wang,Shengyao Li,Dong-chen Qi,Shuying Cheng,Yangyang Li,Jingsheng Chen,Xiaozhong He,Changjian Li,Stephen J. Pennycook,X. Renshaw Wang###
(806368, 806368)
 Here, we report anobservation of bipolar conduction accompanied by a giant positivemagnetoresistance in D<missing VAR>-doped metallic Ti oxide (TiOxDy) films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 900, '%', 3],[150.0, 6, 'T', 3]

Ti
###Bipolar conduction and giant positive magnetoresistance in doped metallic titanium oxide heterostructures|Ke Huang,Tao Wang,Mengjia Jin,Liang Wu,Junyao Floria Wang,Shengyao Li,Dong-chen Qi,Shuying Cheng,Yangyang Li,Jingsheng Chen,Xiaozhong He,Changjian Li,Stephen J. Pennycook,X. Renshaw Wang###
(806406, 806406)
 To overcome thechallenges in intercalating the D<missing VAR> into a crystalline oxide, a series of TiOxDywere formed by sequentially doping Ti with D<missing VAR> and surface/interface oxidation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 900, '%', 2],[112.0, 6, 'T', 2]

Dy
###Bipolar conduction and giant positive magnetoresistance in doped metallic titanium oxide heterostructures|Ke Huang,Tao Wang,Mengjia Jin,Liang Wu,Junyao Floria Wang,Shengyao Li,Dong-chen Qi,Shuying Cheng,Yangyang Li,Jingsheng Chen,Xiaozhong He,Changjian Li,Stephen J. Pennycook,X. Renshaw Wang###
(806408, 806408)
 To overcome thechallenges in intercalating the D<missing VAR> into a crystalline oxide, a series of TiOxDywere formed by sequentially doping Ti with D<missing VAR> and surface/interface oxidation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 900, '%', 2],[110.0, 6, 'T', 2]

Ti
###Bipolar conduction and giant positive magnetoresistance in doped metallic titanium oxide heterostructures|Ke Huang,Tao Wang,Mengjia Jin,Liang Wu,Junyao Floria Wang,Shengyao Li,Dong-chen Qi,Shuying Cheng,Yangyang Li,Jingsheng Chen,Xiaozhong He,Changjian Li,Stephen J. Pennycook,X. Renshaw Wang###
(806421, 806421)
 To overcome thechallenges in intercalating the D<missing VAR> into a crystalline oxide, a series of TiOxDywere formed by sequentially doping Ti with D<missing VAR> and surface/interface oxidation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 900, '%', 2],[97.0, 6, 'T', 2]

Ti
###Bipolar conduction and giant positive magnetoresistance in doped metallic titanium oxide heterostructures|Ke Huang,Tao Wang,Mengjia Jin,Liang Wu,Junyao Floria Wang,Shengyao Li,Dong-chen Qi,Shuying Cheng,Yangyang Li,Jingsheng Chen,Xiaozhong He,Changjian Li,Stephen J. Pennycook,X. Renshaw Wang###
(806452, 806452)
Intriguingly, while the electron mobility of the TiOxDy increases by an orderof magnitude larger after doping, the emergent holes also exhibit highmobility.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 900, '%', 1],[66.0, 6, 'T', 1]

Dy
###Bipolar conduction and giant positive magnetoresistance in doped metallic titanium oxide heterostructures|Ke Huang,Tao Wang,Mengjia Jin,Liang Wu,Junyao Floria Wang,Shengyao Li,Dong-chen Qi,Shuying Cheng,Yangyang Li,Jingsheng Chen,Xiaozhong He,Changjian Li,Stephen J. Pennycook,X. Renshaw Wang###
(806454, 806454)
Intriguingly, while the electron mobility of the TiOxDy increases by an orderof magnitude larger after doping, the emergent holes also exhibit highmobility.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 900, '%', 1],[64.0, 6, 'T', 1]

EuSn2As2
###Various magnetism of the compressed antiferromagnetic topological insulator EuSn2As2|Hualei Sun,Cuiqun Chen,Yusheng Hou,Yu Gong,Mengwu Huo,Lisi Li,Jia Yu,Wanping Cai,Naitian Liu,Ruqian Wu,Dao-Xin Yao,Meng Wang###
(806601, 806605)
Various magnetism of the compressed antiferromagnetic topological insulator EuSn2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 21.1, 'GPa', 1],[123.0, 24, 'to', 3],[124.0, 77, 'K', 3],[281.0, 10.0, 'GPa', 6]

EuSn2As2
###Various magnetism of the compressed antiferromagnetic topological insulator EuSn2As2|Hualei Sun,Cuiqun Chen,Yusheng Hou,Yu Gong,Mengwu Huo,Lisi Li,Jia Yu,Wanping Cai,Naitian Liu,Ruqian Wu,Dao-Xin Yao,Meng Wang###
(806633, 806637)
 We report a comprehensive high-pressure study on the antiferromagnetictopological insulator EuSn2As2 up to 21.1 GPa through measurements ofsynchrotron x<missing VAR>-ray diffraction, electrical resistance, magnetic resistance, andHall transports combined with first-principles calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 21.1, 'GPa', 0],[91.0, 24, 'to', 2],[92.0, 77, 'K', 2],[249.0, 10.0, 'GPa', 5]

No
###Various magnetism of the compressed antiferromagnetic topological insulator EuSn2As2|Hualei Sun,Cuiqun Chen,Yusheng Hou,Yu Gong,Mengwu Huo,Lisi Li,Jia Yu,Wanping Cai,Naitian Liu,Ruqian Wu,Dao-Xin Yao,Meng Wang###
(806688, 806688)
 No evident traceof a structural phase transition is detected.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0
[46.0, 21.1, 'GPa', 1],[40.0, 24, 'to', 1],[41.0, 77, 'K', 1],[198.0, 10.0, 'GPa', 4]

Eu2
###Various magnetism of the compressed antiferromagnetic topological insulator EuSn2As2|Hualei Sun,Cuiqun Chen,Yusheng Hou,Yu Gong,Mengwu Huo,Lisi Li,Jia Yu,Wanping Cai,Naitian Liu,Ruqian Wu,Dao-Xin Yao,Meng Wang###
(806757, 806758)
 The Neel temperatures determinedfrom resistance are increased from 24 to 77 K under pressure, which is resultedfrom the enhanced magnetic exchange couplings between Eu2 ions yielded by ourfirst-principles calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 21.1, 'GPa', 2],[29.0, 24, 'to', 0],[28.0, 77, 'K', 0],[128.0, 10.0, 'GPa', 3]

EuSn2As2
###Various magnetism of the compressed antiferromagnetic topological insulator EuSn2As2|Hualei Sun,Cuiqun Chen,Yusheng Hou,Yu Gong,Mengwu Huo,Lisi Li,Jia Yu,Wanping Cai,Naitian Liu,Ruqian Wu,Dao-Xin Yao,Meng Wang###
(806784, 806788)
 The negative magnetoresistance of EuSn2As2persists to higher temperatures accordantly.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 21.1, 'GPa', 3],[56.0, 24, 'to', 1],[55.0, 77, 'K', 1],[98.0, 10.0, 'GPa', 2]

N
###Various magnetism of the compressed antiferromagnetic topological insulator EuSn2As2|Hualei Sun,Cuiqun Chen,Yusheng Hou,Yu Gong,Mengwu Huo,Lisi Li,Jia Yu,Wanping Cai,Naitian Liu,Ruqian Wu,Dao-Xin Yao,Meng Wang###
(806816, 806816)
 However, the enhancement of theobserved Neel temperatures deviates from the calculations obviously above10.0 G<missing VAR>Pa.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[174.0, 21.1, 'GPa', 4],[88.0, 24, 'to', 2],[87.0, 77, 'K', 2],[70.0, 10.0, 'GPa', 1]

Pa
###Various magnetism of the compressed antiferromagnetic topological insulator EuSn2As2|Hualei Sun,Cuiqun Chen,Yusheng Hou,Yu Gong,Mengwu Huo,Lisi Li,Jia Yu,Wanping Cai,Naitian Liu,Ruqian Wu,Dao-Xin Yao,Meng Wang###
(806837, 806837)
 However, the enhancement of theobserved Neel temperatures deviates from the calculations obviously above10.0 G<missing VAR>Pa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0
[195.0, 21.1, 'GPa', 4],[109.0, 24, 'to', 2],[108.0, 77, 'K', 2],[49.0, 10.0, 'GPa', 1]

In
###Various magnetism of the compressed antiferromagnetic topological insulator EuSn2As2|Hualei Sun,Cuiqun Chen,Yusheng Hou,Yu Gong,Mengwu Huo,Lisi Li,Jia Yu,Wanping Cai,Naitian Liu,Ruqian Wu,Dao-Xin Yao,Meng Wang###
(806840, 806840)
 In addition, the magnitude of the magnetoresistance, the Hallcoefficients, and the charge carrier densities show abrupt changes between 6.9to 10.0 GPa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[198.0, 21.1, 'GPa', 5],[112.0, 24, 'to', 3],[111.0, 77, 'K', 3],[46.0, 10.0, 'GPa', 0]

Eu
###Various magnetism of the compressed antiferromagnetic topological insulator EuSn2As2|Hualei Sun,Cuiqun Chen,Yusheng Hou,Yu Gong,Mengwu Huo,Lisi Li,Jia Yu,Wanping Cai,Naitian Liu,Ruqian Wu,Dao-Xin Yao,Meng Wang###
(806914, 806914)
 The abrupt changes probably originate from a pressure inducedvalence change of Eu ions from a divalent state to a divalent and trivalentmixed state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[272.0, 21.1, 'GPa', 6],[186.0, 24, 'to', 4],[185.0, 77, 'K', 4],[28.0, 10.0, 'GPa', 1]

EuSn2As2
###Various magnetism of the compressed antiferromagnetic topological insulator EuSn2As2|Hualei Sun,Cuiqun Chen,Yusheng Hou,Yu Gong,Mengwu Huo,Lisi Li,Jia Yu,Wanping Cai,Naitian Liu,Ruqian Wu,Dao-Xin Yao,Meng Wang###
(806963, 806967)
 Our results provide insights into variation of the magnetism ofEuSn2As2 and similar antiferromagnetic topological insulators under pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[321.0, 21.1, 'GPa', 7],[235.0, 24, 'to', 5],[234.0, 77, 'K', 5],[77.0, 10.0, 'GPa', 2]

Y3Fe5O12/Gd3Fe5O12
###Magnetic coupling in Y$_3$Fe$_5$O$_{12}$/Gd$_3$Fe$_5$O$_{12}$ heterostructures|Sven Becker,Zengyao Ren,Felix Fuhrmann,Andrew Ross,Sally Lord,Shilei Ding,Rui Wu,Jinbo Yang,Jun Miao,Mathias Kläui,Gerhard Jakob###
(806998, 807010)
Magnetic coupling in Y3Fe5O12/Gd3Fe5O12 heterostructures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Y3Fe5O12
###Magnetic coupling in Y$_3$Fe$_5$O$_{12}$/Gd$_3$Fe$_5$O$_{12}$ heterostructures|Sven Becker,Zengyao Ren,Felix Fuhrmann,Andrew Ross,Sally Lord,Shilei Ding,Rui Wu,Jinbo Yang,Jun Miao,Mathias Kläui,Gerhard Jakob###
(807017, 807022)
 Ferrimagnetic Y3Fe5O12 (YIG) is the prototypical material forstudying magnonic properties due to its exceptionally low damping.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YI
###Magnetic coupling in Y$_3$Fe$_5$O$_{12}$/Gd$_3$Fe$_5$O$_{12}$ heterostructures|Sven Becker,Zengyao Ren,Felix Fuhrmann,Andrew Ross,Sally Lord,Shilei Ding,Rui Wu,Jinbo Yang,Jun Miao,Mathias Kläui,Gerhard Jakob###
(807025, 807026)
 Ferrimagnetic Y3Fe5O12 (YIG) is the prototypical material forstudying magnonic properties due to its exceptionally low damping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Y3Fe5O12/Gd3Fe5O12
###Magnetic coupling in Y$_3$Fe$_5$O$_{12}$/Gd$_3$Fe$_5$O$_{12}$ heterostructures|Sven Becker,Zengyao Ren,Felix Fuhrmann,Andrew Ross,Sally Lord,Shilei Ding,Rui Wu,Jinbo Yang,Jun Miao,Mathias Kläui,Gerhard Jakob###
(807131, 807143)
 Here,we study the magnetic coupling in epitaxialY3Fe5O12/Gd3Fe5O12 (YIG/GIG) heterostructures grown bypulsed laser deposition.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

YI
###Magnetic coupling in Y$_3$Fe$_5$O$_{12}$/Gd$_3$Fe$_5$O$_{12}$ heterostructures|Sven Becker,Zengyao Ren,Felix Fuhrmann,Andrew Ross,Sally Lord,Shilei Ding,Rui Wu,Jinbo Yang,Jun Miao,Mathias Kläui,Gerhard Jakob###
(807146, 807147)
 Here,we study the magnetic coupling in epitaxialY3Fe5O12/Gd3Fe5O12 (YIG/GIG) heterostructures grown bypulsed laser deposition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Magnetic coupling in Y$_3$Fe$_5$O$_{12}$/Gd$_3$Fe$_5$O$_{12}$ heterostructures|Sven Becker,Zengyao Ren,Felix Fuhrmann,Andrew Ross,Sally Lord,Shilei Ding,Rui Wu,Jinbo Yang,Jun Miao,Mathias Kläui,Gerhard Jakob###
(807151, 807151)
 Here,we study the magnetic coupling in epitaxialY3Fe5O12/Gd3Fe5O12 (YIG/GIG) heterostructures grown bypulsed laser deposition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SS
###Magnetic coupling in Y$_3$Fe$_5$O$_{12}$/Gd$_3$Fe$_5$O$_{12}$ heterostructures|Sven Becker,Zengyao Ren,Felix Fuhrmann,Andrew Ross,Sally Lord,Shilei Ding,Rui Wu,Jinbo Yang,Jun Miao,Mathias Kläui,Gerhard Jakob###
(807191, 807192)
 From bulk sensitive magnetometry and surface sensitivespin Seebeck effect (SSE) and spin Hall magnetoresistance (SMR) measurements,we determine the alignment of the heterostructure magnetization throughtemperature and external magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Magnetic coupling in Y$_3$Fe$_5$O$_{12}$/Gd$_3$Fe$_5$O$_{12}$ heterostructures|Sven Becker,Zengyao Ren,Felix Fuhrmann,Andrew Ross,Sally Lord,Shilei Ding,Rui Wu,Jinbo Yang,Jun Miao,Mathias Kläui,Gerhard Jakob###
(807205, 807205)
 From bulk sensitive magnetometry and surface sensitivespin Seebeck effect (SSE) and spin Hall magnetoresistance (SMR) measurements,we determine the alignment of the heterostructure magnetization throughtemperature and external magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Magnetic coupling in Y$_3$Fe$_5$O$_{12}$/Gd$_3$Fe$_5$O$_{12}$ heterostructures|Sven Becker,Zengyao Ren,Felix Fuhrmann,Andrew Ross,Sally Lord,Shilei Ding,Rui Wu,Jinbo Yang,Jun Miao,Mathias Kläui,Gerhard Jakob###
(807255, 807255)
 The ferromagnetic coupling between theFe sublattices of YIG<missing VAR> and GIG dominates the overall behavior of theheterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YI
###Magnetic coupling in Y$_3$Fe$_5$O$_{12}$/Gd$_3$Fe$_5$O$_{12}$ heterostructures|Sven Becker,Zengyao Ren,Felix Fuhrmann,Andrew Ross,Sally Lord,Shilei Ding,Rui Wu,Jinbo Yang,Jun Miao,Mathias Kläui,Gerhard Jakob###
(807261, 807262)
 The ferromagnetic coupling between theFe sublattices of YIG<missing VAR> and GIG dominates the overall behavior of theheterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YI
###Magnetic coupling in Y$_3$Fe$_5$O$_{12}$/Gd$_3$Fe$_5$O$_{12}$ heterostructures|Sven Becker,Zengyao Ren,Felix Fuhrmann,Andrew Ross,Sally Lord,Shilei Ding,Rui Wu,Jinbo Yang,Jun Miao,Mathias Kläui,Gerhard Jakob###
(807352, 807353)
 Thiscompensation point shifts to lower temperatures with increasing thickness ofYIG<missing VAR> due the parallel alignment of the iron moments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrRuO3
###Angular dependence of Hall effect and magnetoresistance in SrRuO$_3$-SrIrO$_3$ heterostructures|Sven Esser,Jiongyao Wu,Sebastian Esser,Robert Gruhl,Anton Jesche,Vladimir Roddatis,Vasily Moshnyaga,Rossitza Pentcheva,Philipp Gegenwart###
(807502, 807505)
Angular dependence of Hall effect and magnetoresistance in SrRuO3-SrIrO3 heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrIrO3
###Angular dependence of Hall effect and magnetoresistance in SrRuO$_3$-SrIrO$_3$ heterostructures|Sven Esser,Jiongyao Wu,Sebastian Esser,Robert Gruhl,Anton Jesche,Vladimir Roddatis,Vasily Moshnyaga,Rossitza Pentcheva,Philipp Gegenwart###
(807507, 807510)
Angular dependence of Hall effect and magnetoresistance in SrRuO3-SrIrO3 heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrRuO3
###Angular dependence of Hall effect and magnetoresistance in SrRuO$_3$-SrIrO$_3$ heterostructures|Sven Esser,Jiongyao Wu,Sebastian Esser,Robert Gruhl,Anton Jesche,Vladimir Roddatis,Vasily Moshnyaga,Rossitza Pentcheva,Philipp Gegenwart###
(807517, 807520)
 Perovskite SrRuO3 is a prototypical itinerant ferromagnet which allowsinterface engineering of its electronic and magnetic properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrRuO3
###Angular dependence of Hall effect and magnetoresistance in SrRuO$_3$-SrIrO$_3$ heterostructures|Sven Esser,Jiongyao Wu,Sebastian Esser,Robert Gruhl,Anton Jesche,Vladimir Roddatis,Vasily Moshnyaga,Rossitza Pentcheva,Philipp Gegenwart###
(807578, 807581)
 We reportsynthesis and investigation of atomically flat artificial multilayers ofSrRuO3 with the spin-orbit semimetal SrIrO3 in combination withband-structure calculations with a Hubbard U term and topological analysis.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrIrO3
###Angular dependence of Hall effect and magnetoresistance in SrRuO$_3$-SrIrO$_3$ heterostructures|Sven Esser,Jiongyao Wu,Sebastian Esser,Robert Gruhl,Anton Jesche,Vladimir Roddatis,Vasily Moshnyaga,Rossitza Pentcheva,Philipp Gegenwart###
(807593, 807596)
 We reportsynthesis and investigation of atomically flat artificial multilayers ofSrRuO3 with the spin-orbit semimetal SrIrO3 in combination withband-structure calculations with a Hubbard U term and topological analysis.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

U
###Angular dependence of Hall effect and magnetoresistance in SrRuO$_3$-SrIrO$_3$ heterostructures|Sven Esser,Jiongyao Wu,Sebastian Esser,Robert Gruhl,Anton Jesche,Vladimir Roddatis,Vasily Moshnyaga,Rossitza Pentcheva,Philipp Gegenwart###
(807617, 807617)
 We reportsynthesis and investigation of atomically flat artificial multilayers ofSrRuO3 with the spin-orbit semimetal SrIrO3 in combination withband-structure calculations with a Hubbard U term and topological analysis.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ru
###Angular dependence of Hall effect and magnetoresistance in SrRuO$_3$-SrIrO$_3$ heterostructures|Sven Esser,Jiongyao Wu,Sebastian Esser,Robert Gruhl,Anton Jesche,Vladimir Roddatis,Vasily Moshnyaga,Rossitza Pentcheva,Philipp Gegenwart###
(807647, 807647)
They reveal an electronic reconstruction and emergence of flat Ru-4d<missing VAR>xzbands near the interface, ferromagnetic interlayer coupling and negativeBerry-curvature contribution to the anomalous Hall effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Optical read-out of the Néel vector in metallic antiferromagnet Mn$_{2}$Au|Vladimir Grigorev,Mariia Filianina,Stanislav Yu. Bodnar,Sergei Sobolev,Nilabha Bhattacharjee,Satya Bommanaboyena,Yaryna Lytvynenko,Yurii Skourski,Dirk Fuchs,Mathias Kläui,Martin Jourdan,Jure Demsar###
(807992, 807992)
Optical read-out of the Nel vector in metallic antiferromagnet Mn2Au.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[270.0, 0.6, '%', 6]

Mn2Au
###Optical read-out of the Néel vector in metallic antiferromagnet Mn$_{2}$Au|Vladimir Grigorev,Mariia Filianina,Stanislav Yu. Bodnar,Sergei Sobolev,Nilabha Bhattacharjee,Satya Bommanaboyena,Yaryna Lytvynenko,Yurii Skourski,Dirk Fuchs,Mathias Kläui,Martin Jourdan,Jure Demsar###
(808003, 808005)
Optical read-out of the Nel vector in metallic antiferromagnet Mn2Au.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[257.0, 0.6, '%', 6]

N
###Optical read-out of the Néel vector in metallic antiferromagnet Mn$_{2}$Au|Vladimir Grigorev,Mariia Filianina,Stanislav Yu. Bodnar,Sergei Sobolev,Nilabha Bhattacharjee,Satya Bommanaboyena,Yaryna Lytvynenko,Yurii Skourski,Dirk Fuchs,Mathias Kläui,Martin Jourdan,Jure Demsar###
(808042, 808042)
 Metallic antiferromagnets with broken inversion symmetry on the twosublattices, strong spin-orbit coupling and high Ne<missing VAR>el temperatures offernew opportunities for applications in spintronics.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[220.0, 0.6, '%', 5]

Mn2Au
###Optical read-out of the Néel vector in metallic antiferromagnet Mn$_{2}$Au|Vladimir Grigorev,Mariia Filianina,Stanislav Yu. Bodnar,Sergei Sobolev,Nilabha Bhattacharjee,Satya Bommanaboyena,Yaryna Lytvynenko,Yurii Skourski,Dirk Fuchs,Mathias Kläui,Martin Jourdan,Jure Demsar###
(808066, 808068)
 Especially Mn2Au, withhigh Ne<missing VAR>el temperature and conductivity, is particularly interesting forreal-world applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[194.0, 0.6, '%', 4]

N
###Optical read-out of the Néel vector in metallic antiferromagnet Mn$_{2}$Au|Vladimir Grigorev,Mariia Filianina,Stanislav Yu. Bodnar,Sergei Sobolev,Nilabha Bhattacharjee,Satya Bommanaboyena,Yaryna Lytvynenko,Yurii Skourski,Dirk Fuchs,Mathias Kläui,Martin Jourdan,Jure Demsar###
(808076, 808076)
 Especially Mn2Au, withhigh Ne<missing VAR>el temperature and conductivity, is particularly interesting forreal-world applications.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, 0.6, '%', 4]

N
###Optical read-out of the Néel vector in metallic antiferromagnet Mn$_{2}$Au|Vladimir Grigorev,Mariia Filianina,Stanislav Yu. Bodnar,Sergei Sobolev,Nilabha Bhattacharjee,Satya Bommanaboyena,Yaryna Lytvynenko,Yurii Skourski,Dirk Fuchs,Mathias Kläui,Martin Jourdan,Jure Demsar###
(808132, 808132)
 the Ne<missing VAR>el vector, by current pulses has beenrecently demonstrated, with the read-out limited to studies of anisotropicmagnetoresistance or X<missing VAR>-ray magnetic linear dichroism.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 0.6, '%', 2]

Mn2Au
###Optical read-out of the Néel vector in metallic antiferromagnet Mn$_{2}$Au|Vladimir Grigorev,Mariia Filianina,Stanislav Yu. Bodnar,Sergei Sobolev,Nilabha Bhattacharjee,Satya Bommanaboyena,Yaryna Lytvynenko,Yurii Skourski,Dirk Fuchs,Mathias Kläui,Martin Jourdan,Jure Demsar###
(808211, 808213)
 Here, we report on thein-plane reflectivity anisotropy of Mn2Au (001) films, which were Ne<missing VAR>elvector aligned in pulsed magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 0.6, '%', 1]

N
###Optical read-out of the Néel vector in metallic antiferromagnet Mn$_{2}$Au|Vladimir Grigorev,Mariia Filianina,Stanislav Yu. Bodnar,Sergei Sobolev,Nilabha Bhattacharjee,Satya Bommanaboyena,Yaryna Lytvynenko,Yurii Skourski,Dirk Fuchs,Mathias Kläui,Martin Jourdan,Jure Demsar###
(808226, 808226)
 Here, we report on thein-plane reflectivity anisotropy of Mn2Au (001) films, which were Ne<missing VAR>elvector aligned in pulsed magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 0.6, '%', 1]

In
###Optical read-out of the Néel vector in metallic antiferromagnet Mn$_{2}$Au|Vladimir Grigorev,Mariia Filianina,Stanislav Yu. Bodnar,Sergei Sobolev,Nilabha Bhattacharjee,Satya Bommanaboyena,Yaryna Lytvynenko,Yurii Skourski,Dirk Fuchs,Mathias Kläui,Martin Jourdan,Jure Demsar###
(808244, 808244)
 In the near-infrared, the anisotropyis approx 0.6%, with higher reflectivity for the light polarized along theNe<missing VAR>el vector.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 0.6, '%', 0]

N
###Optical read-out of the Néel vector in metallic antiferromagnet Mn$_{2}$Au|Vladimir Grigorev,Mariia Filianina,Stanislav Yu. Bodnar,Sergei Sobolev,Nilabha Bhattacharjee,Satya Bommanaboyena,Yaryna Lytvynenko,Yurii Skourski,Dirk Fuchs,Mathias Kläui,Martin Jourdan,Jure Demsar###
(808285, 808285)
 In the near-infrared, the anisotropyis approx 0.6%, with higher reflectivity for the light polarized along theNe<missing VAR>el vector.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 0.6, '%', 0]

Mn2Au
###Optical read-out of the Néel vector in metallic antiferromagnet Mn$_{2}$Au|Vladimir Grigorev,Mariia Filianina,Stanislav Yu. Bodnar,Sergei Sobolev,Nilabha Bhattacharjee,Satya Bommanaboyena,Yaryna Lytvynenko,Yurii Skourski,Dirk Fuchs,Mathias Kläui,Martin Jourdan,Jure Demsar###
(808333, 808335)
 This suggests the dichroism inMn2Au is a result of the strong spin-orbit interactions giving rise toanisotropy of interband optical transitions, in-line with recent studies ofelectronic band-structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 0.6, '%', 2]

N
###Optical read-out of the Néel vector in metallic antiferromagnet Mn$_{2}$Au|Vladimir Grigorev,Mariia Filianina,Stanislav Yu. Bodnar,Sergei Sobolev,Nilabha Bhattacharjee,Satya Bommanaboyena,Yaryna Lytvynenko,Yurii Skourski,Dirk Fuchs,Mathias Kläui,Martin Jourdan,Jure Demsar###
(808432, 808432)
 The considerable magnetic linear dichroism in thenear-infrared could be used for ultrafast optical read-out of the Ne<missing VAR>elvector in Mn2Au.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[170.0, 0.6, '%', 3]

Mn2Au
###Optical read-out of the Néel vector in metallic antiferromagnet Mn$_{2}$Au|Vladimir Grigorev,Mariia Filianina,Stanislav Yu. Bodnar,Sergei Sobolev,Nilabha Bhattacharjee,Satya Bommanaboyena,Yaryna Lytvynenko,Yurii Skourski,Dirk Fuchs,Mathias Kläui,Martin Jourdan,Jure Demsar###
(808441, 808443)
 The considerable magnetic linear dichroism in thenear-infrared could be used for ultrafast optical read-out of the Ne<missing VAR>elvector in Mn2Au.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 0.6, '%', 3]

In
###Ultimate In-plane Magnetoresistance Ratio of Graphene by Controlling the Gapped Dirac Cone through Pseudospin|Yusuf Wicaksono,Halimah Harfah,Gagus Ketut Sunnardianto,Muhammad Aziz Majidi,Koichi Kusakabe###
(808456, 808456)
Ultimate In-plane Magnetoresistance Ratio of Graphene by Controlling the Gapped Dirac Cone through Pseudospin.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[366.0, 1450, '%', 6]

In
###Ultimate In-plane Magnetoresistance Ratio of Graphene by Controlling the Gapped Dirac Cone through Pseudospin|Yusuf Wicaksono,Halimah Harfah,Gagus Ketut Sunnardianto,Muhammad Aziz Majidi,Koichi Kusakabe###
(808558, 808558)
 In the sandwiched part,the gapped Dirac cone of graphene can be controlled via pseudospin by changingthe magnetic alignment of the Ni(111) slabs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[264.0, 1450, '%', 4]

F0.2
###Ultimate In-plane Magnetoresistance Ratio of Graphene by Controlling the Gapped Dirac Cone through Pseudospin|Yusuf Wicaksono,Halimah Harfah,Gagus Ketut Sunnardianto,Muhammad Aziz Majidi,Koichi Kusakabe###
(808729, 808730)
 Thetransmission probability calculation for the in-plane conductance of the systemindicated that the antiparallel configuration would result in nearly zeroconductance of E-EF0.2 e<missing VAR>V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 1450, '%', 2]

V
###Ultimate In-plane Magnetoresistance Ratio of Graphene by Controlling the Gapped Dirac Cone through Pseudospin|Yusuf Wicaksono,Halimah Harfah,Gagus Ketut Sunnardianto,Muhammad Aziz Majidi,Koichi Kusakabe###
(808733, 808733)
 Thetransmission probability calculation for the in-plane conductance of the systemindicated that the antiparallel configuration would result in nearly zeroconductance of E-EF0.2 e<missing VAR>V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 1450, '%', 2]

In
###Ultimate In-plane Magnetoresistance Ratio of Graphene by Controlling the Gapped Dirac Cone through Pseudospin|Yusuf Wicaksono,Halimah Harfah,Gagus Ketut Sunnardianto,Muhammad Aziz Majidi,Koichi Kusakabe###
(808736, 808736)
 In the parallel configuration, the transmissionprobability calculation indicated that the system would have a profile similarto that of pristine graphene.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 1450, '%', 1]

F
###Highly Tunable Magnetic and Magnetotransport Properties of Exchange Coupled Ferromagnet/Antiferromagnet-based Heterostructures|Sri Sai Phani Kanth Arekapudi,Daniel Bülz,Fabian Ganss,Fabian Samad,Chen Luo,Dietrich R. T. Zahn,Kilian Lenz,Georgeta Salvan,Manfred Albrecht,Olav Hellwig###
(808911, 808911)
 Antiferromagnets (AFMs) with zero net magnetization are proposed as activeelements in future spintronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Highly Tunable Magnetic and Magnetotransport Properties of Exchange Coupled Ferromagnet/Antiferromagnet-based Heterostructures|Sri Sai Phani Kanth Arekapudi,Daniel Bülz,Fabian Ganss,Fabian Samad,Chen Luo,Dietrich R. T. Zahn,Kilian Lenz,Georgeta Salvan,Manfred Albrecht,Olav Hellwig###
(808959, 808959)
 Depending on the critical thickness ofthe AFM<missing VAR> thin films and the measurement temperature, bimetallic Mn-based alloysand transition metal oxide-based AFMs can host various coexisting ordered,disordered, and frustrated AFM<missing VAR> phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Highly Tunable Magnetic and Magnetotransport Properties of Exchange Coupled Ferromagnet/Antiferromagnet-based Heterostructures|Sri Sai Phani Kanth Arekapudi,Daniel Bülz,Fabian Ganss,Fabian Samad,Chen Luo,Dietrich R. T. Zahn,Kilian Lenz,Georgeta Salvan,Manfred Albrecht,Olav Hellwig###
(808977, 808977)
 Depending on the critical thickness ofthe AFM<missing VAR> thin films and the measurement temperature, bimetallic Mn-based alloysand transition metal oxide-based AFMs can host various coexisting ordered,disordered, and frustrated AFM<missing VAR> phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Highly Tunable Magnetic and Magnetotransport Properties of Exchange Coupled Ferromagnet/Antiferromagnet-based Heterostructures|Sri Sai Phani Kanth Arekapudi,Daniel Bülz,Fabian Ganss,Fabian Samad,Chen Luo,Dietrich R. T. Zahn,Kilian Lenz,Georgeta Salvan,Manfred Albrecht,Olav Hellwig###
(808995, 808995)
 Depending on the critical thickness ofthe AFM<missing VAR> thin films and the measurement temperature, bimetallic Mn-based alloysand transition metal oxide-based AFMs can host various coexisting ordered,disordered, and frustrated AFM<missing VAR> phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Highly Tunable Magnetic and Magnetotransport Properties of Exchange Coupled Ferromagnet/Antiferromagnet-based Heterostructures|Sri Sai Phani Kanth Arekapudi,Daniel Bülz,Fabian Ganss,Fabian Samad,Chen Luo,Dietrich R. T. Zahn,Kilian Lenz,Georgeta Salvan,Manfred Albrecht,Olav Hellwig###
(809018, 809018)
 Depending on the critical thickness ofthe AFM<missing VAR> thin films and the measurement temperature, bimetallic Mn-based alloysand transition metal oxide-based AFMs can host various coexisting ordered,disordered, and frustrated AFM<missing VAR> phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Highly Tunable Magnetic and Magnetotransport Properties of Exchange Coupled Ferromagnet/Antiferromagnet-based Heterostructures|Sri Sai Phani Kanth Arekapudi,Daniel Bülz,Fabian Ganss,Fabian Samad,Chen Luo,Dietrich R. T. Zahn,Kilian Lenz,Georgeta Salvan,Manfred Albrecht,Olav Hellwig###
(809042, 809042)
 Such coexisting phases in the exchangecoupled ferromagnetic (FM)/AFM<missing VAR>-based heterostructures can result in unusualmagnetic and magnetotransport phenomena.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Highly Tunable Magnetic and Magnetotransport Properties of Exchange Coupled Ferromagnet/Antiferromagnet-based Heterostructures|Sri Sai Phani Kanth Arekapudi,Daniel Bülz,Fabian Ganss,Fabian Samad,Chen Luo,Dietrich R. T. Zahn,Kilian Lenz,Georgeta Salvan,Manfred Albrecht,Olav Hellwig###
(809047, 809047)
 Such coexisting phases in the exchangecoupled ferromagnetic (FM)/AFM<missing VAR>-based heterostructures can result in unusualmagnetic and magnetotransport phenomena.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Highly Tunable Magnetic and Magnetotransport Properties of Exchange Coupled Ferromagnet/Antiferromagnet-based Heterostructures|Sri Sai Phani Kanth Arekapudi,Daniel Bülz,Fabian Ganss,Fabian Samad,Chen Luo,Dietrich R. T. Zahn,Kilian Lenz,Georgeta Salvan,Manfred Albrecht,Olav Hellwig###
(809085, 809085)
 Here, we integrate chemicallydisordered AFM<missing VAR> IrMn3 thin films with coexisting AFM<missing VAR> phases into complexexchange coupled MgO(001)/Ni3Fe/IrMn3/Ni3Fe/CoO heterostructures and study thestructural, magnetic, and magnetotransport properties in various magnetic fieldcooling states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

IrMn3
###Highly Tunable Magnetic and Magnetotransport Properties of Exchange Coupled Ferromagnet/Antiferromagnet-based Heterostructures|Sri Sai Phani Kanth Arekapudi,Daniel Bülz,Fabian Ganss,Fabian Samad,Chen Luo,Dietrich R. T. Zahn,Kilian Lenz,Georgeta Salvan,Manfred Albrecht,Olav Hellwig###
(809088, 809090)
 Here, we integrate chemicallydisordered AFM<missing VAR> IrMn3 thin films with coexisting AFM<missing VAR> phases into complexexchange coupled MgO(001)/Ni3Fe/IrMn3/Ni3Fe/CoO heterostructures and study thestructural, magnetic, and magnetotransport properties in various magnetic fieldcooling states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Highly Tunable Magnetic and Magnetotransport Properties of Exchange Coupled Ferromagnet/Antiferromagnet-based Heterostructures|Sri Sai Phani Kanth Arekapudi,Daniel Bülz,Fabian Ganss,Fabian Samad,Chen Luo,Dietrich R. T. Zahn,Kilian Lenz,Georgeta Salvan,Manfred Albrecht,Olav Hellwig###
(809101, 809101)
 Here, we integrate chemicallydisordered AFM<missing VAR> IrMn3 thin films with coexisting AFM<missing VAR> phases into complexexchange coupled MgO(001)/Ni3Fe/IrMn3/Ni3Fe/CoO heterostructures and study thestructural, magnetic, and magnetotransport properties in various magnetic fieldcooling states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni3Fe/IrMn3/Ni3Fe/CoO
###Highly Tunable Magnetic and Magnetotransport Properties of Exchange Coupled Ferromagnet/Antiferromagnet-based Heterostructures|Sri Sai Phani Kanth Arekapudi,Daniel Bülz,Fabian Ganss,Fabian Samad,Chen Luo,Dietrich R. T. Zahn,Kilian Lenz,Georgeta Salvan,Manfred Albrecht,Olav Hellwig###
(809121, 809134)
 Here, we integrate chemicallydisordered AFM<missing VAR> IrMn3 thin films with coexisting AFM<missing VAR> phases into complexexchange coupled MgO(001)/Ni3Fe/IrMn3/Ni3Fe/CoO heterostructures and study thestructural, magnetic, and magnetotransport properties in various magnetic fieldcooling states.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

In
###Highly Tunable Magnetic and Magnetotransport Properties of Exchange Coupled Ferromagnet/Antiferromagnet-based Heterostructures|Sri Sai Phani Kanth Arekapudi,Daniel Bülz,Fabian Ganss,Fabian Samad,Chen Luo,Dietrich R. T. Zahn,Kilian Lenz,Georgeta Salvan,Manfred Albrecht,Olav Hellwig###
(809171, 809171)
 In particular, we unveil the impact of rotating the relativeorientation of the disordered and reversible AFM<missing VAR> moments with respect to theirreversible AFM<missing VAR> moments on the magnetic and magnetoresistance properties ofthe exchange coupled heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Highly Tunable Magnetic and Magnetotransport Properties of Exchange Coupled Ferromagnet/Antiferromagnet-based Heterostructures|Sri Sai Phani Kanth Arekapudi,Daniel Bülz,Fabian Ganss,Fabian Samad,Chen Luo,Dietrich R. T. Zahn,Kilian Lenz,Georgeta Salvan,Manfred Albrecht,Olav Hellwig###
(809206, 809206)
 In particular, we unveil the impact of rotating the relativeorientation of the disordered and reversible AFM<missing VAR> moments with respect to theirreversible AFM<missing VAR> moments on the magnetic and magnetoresistance properties ofthe exchange coupled heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Highly Tunable Magnetic and Magnetotransport Properties of Exchange Coupled Ferromagnet/Antiferromagnet-based Heterostructures|Sri Sai Phani Kanth Arekapudi,Daniel Bülz,Fabian Ganss,Fabian Samad,Chen Luo,Dietrich R. T. Zahn,Kilian Lenz,Georgeta Salvan,Manfred Albrecht,Olav Hellwig###
(809223, 809223)
 In particular, we unveil the impact of rotating the relativeorientation of the disordered and reversible AFM<missing VAR> moments with respect to theirreversible AFM<missing VAR> moments on the magnetic and magnetoresistance properties ofthe exchange coupled heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Highly Tunable Magnetic and Magnetotransport Properties of Exchange Coupled Ferromagnet/Antiferromagnet-based Heterostructures|Sri Sai Phani Kanth Arekapudi,Daniel Bülz,Fabian Ganss,Fabian Samad,Chen Luo,Dietrich R. T. Zahn,Kilian Lenz,Georgeta Salvan,Manfred Albrecht,Olav Hellwig###
(809268, 809268)
 We further found that the persistence ofAFM<missing VAR> grains with thermally disordered and reversible AFM<missing VAR> order is crucial forachieving highly tunable magnetic properties and multi-level magnetoresistancestates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Highly Tunable Magnetic and Magnetotransport Properties of Exchange Coupled Ferromagnet/Antiferromagnet-based Heterostructures|Sri Sai Phani Kanth Arekapudi,Daniel Bülz,Fabian Ganss,Fabian Samad,Chen Luo,Dietrich R. T. Zahn,Kilian Lenz,Georgeta Salvan,Manfred Albrecht,Olav Hellwig###
(809284, 809284)
 We further found that the persistence ofAFM<missing VAR> grains with thermally disordered and reversible AFM<missing VAR> order is crucial forachieving highly tunable magnetic properties and multi-level magnetoresistancestates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Highly Tunable Magnetic and Magnetotransport Properties of Exchange Coupled Ferromagnet/Antiferromagnet-based Heterostructures|Sri Sai Phani Kanth Arekapudi,Daniel Bülz,Fabian Ganss,Fabian Samad,Chen Luo,Dietrich R. T. Zahn,Kilian Lenz,Georgeta Salvan,Manfred Albrecht,Olav Hellwig###
(809369, 809369)
 We anticipate that the introduced approach and the heterostructurearchitecture can be utilized in future spintronic devices to manipulate thethermally disordered and reversible AFM<missing VAR> order at the nanoscale.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/MgO/Fe
###Boosting room temperature tunnel magnetoresistance in hybrid magnetic tunnel junctions under electric bias|César González-Ruano,Coriolan Tiusan,Michel Hehn,Farkhad G. Aliev###
(809451, 809456)
 Spin-resolved electron symmetry filtering is a key mechanism behind gianttunneling magnetoresistance (TMR) in Fe/MgO/Fe and similar magnetic tunneljunctions (MTJs), providing room temperature functionality in modern spinelectronics.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[80.0, 0.5, 'V', 1]

V/MgO/Fe/MgO/Fe/Co
###Boosting room temperature tunnel magnetoresistance in hybrid magnetic tunnel junctions under electric bias|César González-Ruano,Coriolan Tiusan,Michel Hehn,Farkhad G. Aliev###
(809665, 809677)
 Here, a fundamentally different approach isdemonstrated, providing a strong TMR boost under applied bias inV/MgO/Fe/MgO/Fe/Co hybrids.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[129.0, 0.5, 'V', 4]

(SOC)
###Boosting room temperature tunnel magnetoresistance in hybrid magnetic tunnel junctions under electric bias|César González-Ruano,Coriolan Tiusan,Michel Hehn,Farkhad G. Aliev###
(809694, 809698)
 This pathway uses spin orbit coupling (SOC)controlled interfacial states in vanadium, which contrary to the V(001) bulkstates are allowed to tunnel to Fe(001) at low biases.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 0.5, 'V', 5]

V/MgO
###Boosting room temperature tunnel magnetoresistance in hybrid magnetic tunnel junctions under electric bias|César González-Ruano,Coriolan Tiusan,Michel Hehn,Farkhad G. Aliev###
(809808, 809811)
 The experimentallyobserved strong increase of TMR with bias is modelled using two nonlinearresistances in series, with the low bias conductance of the first (V/MgO/Fe)element being boosted by the SOC-controlled interfacial states, while theconductance of the second (Fe/MgO/Fe) junctions controlled by the relativealignment of the two ferromagnetic layers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[272.0, 0.5, 'V', 6]

Fe
###Boosting room temperature tunnel magnetoresistance in hybrid magnetic tunnel junctions under electric bias|César González-Ruano,Coriolan Tiusan,Michel Hehn,Farkhad G. Aliev###
(809813, 809813)
 The experimentallyobserved strong increase of TMR with bias is modelled using two nonlinearresistances in series, with the low bias conductance of the first (V/MgO/Fe)element being boosted by the SOC-controlled interfacial states, while theconductance of the second (Fe/MgO/Fe) junctions controlled by the relativealignment of the two ferromagnetic layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[277.0, 0.5, 'V', 6]

SOC
###Boosting room temperature tunnel magnetoresistance in hybrid magnetic tunnel junctions under electric bias|César González-Ruano,Coriolan Tiusan,Michel Hehn,Farkhad G. Aliev###
(809827, 809829)
 The experimentallyobserved strong increase of TMR with bias is modelled using two nonlinearresistances in series, with the low bias conductance of the first (V/MgO/Fe)element being boosted by the SOC-controlled interfacial states, while theconductance of the second (Fe/MgO/Fe) junctions controlled by the relativealignment of the two ferromagnetic layers.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[291.0, 0.5, 'V', 6]

Fe/MgO
###Boosting room temperature tunnel magnetoresistance in hybrid magnetic tunnel junctions under electric bias|César González-Ruano,Coriolan Tiusan,Michel Hehn,Farkhad G. Aliev###
(809852, 809855)
 The experimentallyobserved strong increase of TMR with bias is modelled using two nonlinearresistances in series, with the low bias conductance of the first (V/MgO/Fe)element being boosted by the SOC-controlled interfacial states, while theconductance of the second (Fe/MgO/Fe) junctions controlled by the relativealignment of the two ferromagnetic layers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[316.0, 0.5, 'V', 6]

Fe
###Boosting room temperature tunnel magnetoresistance in hybrid magnetic tunnel junctions under electric bias|César González-Ruano,Coriolan Tiusan,Michel Hehn,Farkhad G. Aliev###
(809857, 809857)
 The experimentallyobserved strong increase of TMR with bias is modelled using two nonlinearresistances in series, with the low bias conductance of the first (V/MgO/Fe)element being boosted by the SOC-controlled interfacial states, while theconductance of the second (Fe/MgO/Fe) junctions controlled by the relativealignment of the two ferromagnetic layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[321.0, 0.5, 'V', 6]

Sr2IrO4
###The Jeff=1/2 antiferromagnet Sr2IrO4: A golden avenue toward new physics and functions|Chengliang Lu,Jun-Ming Liu###
(809947, 809951)
The Jeff1/2 antiferromagnet Sr2IrO4 A golden avenue toward new physics and functions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr2IrO4
###The Jeff=1/2 antiferromagnet Sr2IrO4: A golden avenue toward new physics and functions|Chengliang Lu,Jun-Ming Liu###
(810041, 810045)
 Among these highly focused quantum materials,perovskite Sr2IrO4 belonging to the Ruddlesden-Popper series stands out and hasbeen intensively addressed in the last decade, since it hosts a novel Jeff 1/2 state which is a profound manifestation of strong spin-orbit coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###The Jeff=1/2 antiferromagnet Sr2IrO4: A golden avenue toward new physics and functions|Chengliang Lu,Jun-Ming Liu###
(810171, 810171)
 In this progressreport, we take Sr2IrO4 as an example to overview the recent advances of theJeff  1/2 state in two aspects materials fundamentals and functionalitypotentials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr2IrO4
###The Jeff=1/2 antiferromagnet Sr2IrO4: A golden avenue toward new physics and functions|Chengliang Lu,Jun-Ming Liu###
(810185, 810189)
 In this progressreport, we take Sr2IrO4 as an example to overview the recent advances of theJeff  1/2 state in two aspects materials fundamentals and functionalitypotentials.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###The Jeff=1/2 antiferromagnet Sr2IrO4: A golden avenue toward new physics and functions|Chengliang Lu,Jun-Ming Liu###
(810239, 810239)
 In the fundamentals part, we first illustrate basic issues for thelayered canted antiferromagnetic order of the Jeff  1/2 magnetic moments inSr2IrO4, and then review the progress of the antiferromagnetic order modulationthrough diverse routes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr2IrO4
###The Jeff=1/2 antiferromagnet Sr2IrO4: A golden avenue toward new physics and functions|Chengliang Lu,Jun-Ming Liu###
(810289, 810293)
 In the fundamentals part, we first illustrate basic issues for thelayered canted antiferromagnetic order of the Jeff  1/2 magnetic moments inSr2IrO4, and then review the progress of the antiferromagnetic order modulationthrough diverse routes.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nd3Al
###Colossal Anomalous Hall Conductivity and Topological Hall Effect in Ferromagnetic Kagome Metal Nd$_3$Al|Durgesh Singh,Jadupati Nag,Sankararao Yadam,V. Ganesan,Aftab Alam,K. G. Suresh###
(810430, 810432)
Colossal Anomalous Hall Conductivity and Topological Hall Effect in Ferromagnetic Kagome Metal Nd3Al.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[237.0, 1.8, 'x', 4]

H
###Colossal Anomalous Hall Conductivity and Topological Hall Effect in Ferromagnetic Kagome Metal Nd$_3$Al|Durgesh Singh,Jadupati Nag,Sankararao Yadam,V. Ganesan,Aftab Alam,K. G. Suresh###
(810452, 810452)
 Historically, the genesis of anomalous Hall effect (AHE) in magneticmaterials has always been a fascinating yet controversial topic in the solidstate physics community.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[217.0, 1.8, 'x', 3]

H
###Colossal Anomalous Hall Conductivity and Topological Hall Effect in Ferromagnetic Kagome Metal Nd$_3$Al|Durgesh Singh,Jadupati Nag,Sankararao Yadam,V. Ganesan,Aftab Alam,K. G. Suresh###
(810544, 810544)
 Recent progress on the understanding of this topic hasrevealed an intimate connection between the Berry curvature of occupiedelectronic states and the intrinsic AHE<missing VAR>.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 1.8, 'x', 2]

H
###Colossal Anomalous Hall Conductivity and Topological Hall Effect in Ferromagnetic Kagome Metal Nd$_3$Al|Durgesh Singh,Jadupati Nag,Sankararao Yadam,V. Ganesan,Aftab Alam,K. G. Suresh###
(810613, 810613)
 Magnetic Weyl semimetals with brokentime reversal symmetry is a classic example, which is expected to show largecontributions to Berry curvature around the topological nodes and hence to theAHE<missing VAR>.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 1.8, 'x', 1]

Nd3Al
###Colossal Anomalous Hall Conductivity and Topological Hall Effect in Ferromagnetic Kagome Metal Nd$_3$Al|Durgesh Singh,Jadupati Nag,Sankararao Yadam,V. Ganesan,Aftab Alam,K. G. Suresh###
(810632, 810634)
 Here, we report a kagome metallic ferromagnet Nd3Al, with a largeunconventional positive magnetoresistance ( 80 %) and colossal anomalous Hallconductivity of 1.8x105 S/cm (largest ever reported to the best of ourknowledge).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 1.8, 'x', 0]

S
###Colossal Anomalous Hall Conductivity and Topological Hall Effect in Ferromagnetic Kagome Metal Nd$_3$Al|Durgesh Singh,Jadupati Nag,Sankararao Yadam,V. Ganesan,Aftab Alam,K. G. Suresh###
(810673, 810673)
 Here, we report a kagome metallic ferromagnet Nd3Al, with a largeunconventional positive magnetoresistance ( 80 %) and colossal anomalous Hallconductivity of 1.8x105 S/cm (largest ever reported to the best of ourknowledge).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 1.8, 'x', 0]

Nd
###Colossal Anomalous Hall Conductivity and Topological Hall Effect in Ferromagnetic Kagome Metal Nd$_3$Al|Durgesh Singh,Jadupati Nag,Sankararao Yadam,V. Ganesan,Aftab Alam,K. G. Suresh###
(810898, 810898)
 Ab-initiocalculations broadly confirm the experimental findings by revealing thepresence of flat bands and Weyl points originating from the itinerant Ndmoments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[229.0, 1.8, 'x', 5]

GdBi
###Antiferromagnetism and large magnetoresistance in GdBi single crystal|Gourav Dwari,Souvik Sasmal,Bishal Maity,Vikas Saini,Ruta Kulkarni,Arumugam Thamizhavel###
(810986, 810987)
Antiferromagnetism and large magnetoresistance in GdBi single crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[303.0, 4, '%', 7]

GdBi
###Antiferromagnetism and large magnetoresistance in GdBi single crystal|Gourav Dwari,Souvik Sasmal,Bishal Maity,Vikas Saini,Ruta Kulkarni,Arumugam Thamizhavel###
(811010, 811011)
 Single crystal of the binary equi-atomic compound GdBi crystallizing in therock salt type cubic crystal structure with the space group Fmbar3m<missing VAR> hasbeen grown by flux method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[279.0, 4, '%', 6]

Fm
###Antiferromagnetism and large magnetoresistance in GdBi single crystal|Gourav Dwari,Souvik Sasmal,Bishal Maity,Vikas Saini,Ruta Kulkarni,Arumugam Thamizhavel###
(811040, 811040)
 Single crystal of the binary equi-atomic compound GdBi crystallizing in therock salt type cubic crystal structure with the space group Fmbar3m<missing VAR> hasbeen grown by flux method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0
[250.0, 4, '%', 6]

Gd
###Antiferromagnetism and large magnetoresistance in GdBi single crystal|Gourav Dwari,Souvik Sasmal,Bishal Maity,Vikas Saini,Ruta Kulkarni,Arumugam Thamizhavel###
(811098, 811098)
 The antiferromagnetic ordering ofthe Gd moments is confirmed at T<missing VAR>rm N  27.5K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[192.0, 4, '%', 4]

N
###Antiferromagnetism and large magnetoresistance in GdBi single crystal|Gourav Dwari,Souvik Sasmal,Bishal Maity,Vikas Saini,Ruta Kulkarni,Arumugam Thamizhavel###
(811111, 811111)
 The antiferromagnetic ordering ofthe Gd moments is confirmed at T<missing VAR>rm N  27.5K.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 4, '%', 4]

K
###Antiferromagnetism and large magnetoresistance in GdBi single crystal|Gourav Dwari,Souvik Sasmal,Bishal Maity,Vikas Saini,Ruta Kulkarni,Arumugam Thamizhavel###
(811115, 811115)
 The antiferromagnetic ordering ofthe Gd moments is confirmed at T<missing VAR>rm N  27.5K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 4, '%', 4]

K
###Antiferromagnetism and large magnetoresistance in GdBi single crystal|Gourav Dwari,Souvik Sasmal,Bishal Maity,Vikas Saini,Ruta Kulkarni,Arumugam Thamizhavel###
(811130, 811130)
 The magnetizationmeasurement performed at 2K along the principal crystallographic direction[100] did not show any metamagnetic transition and no sign of saturation up to7T<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 4, '%', 3]

K
###Antiferromagnetism and large magnetoresistance in GdBi single crystal|Gourav Dwari,Souvik Sasmal,Bishal Maity,Vikas Saini,Ruta Kulkarni,Arumugam Thamizhavel###
(811197, 811197)
 Zero field electrical resistivity reveals a sharp drop at 27.5Ksuggesting a reduction in the spin disorder scattering due to theantiferromagnetic alignment of the Gd moments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 4, '%', 2]

Gd
###Antiferromagnetism and large magnetoresistance in GdBi single crystal|Gourav Dwari,Souvik Sasmal,Bishal Maity,Vikas Saini,Ruta Kulkarni,Arumugam Thamizhavel###
(811231, 811231)
 Zero field electrical resistivity reveals a sharp drop at 27.5Ksuggesting a reduction in the spin disorder scattering due to theantiferromagnetic alignment of the Gd moments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 4, '%', 2]

K
###Antiferromagnetism and large magnetoresistance in GdBi single crystal|Gourav Dwari,Souvik Sasmal,Bishal Maity,Vikas Saini,Ruta Kulkarni,Arumugam Thamizhavel###
(811246, 811246)
 The residual resistivity at2K is 390n<missing VAR>Omegacm suggesting a good quality of the grown crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 4, '%', 1]

K
###Antiferromagnetism and large magnetoresistance in GdBi single crystal|Gourav Dwari,Souvik Sasmal,Bishal Maity,Vikas Saini,Ruta Kulkarni,Arumugam Thamizhavel###
(811323, 811323)
 Themagneto resistance attains a value of 1.0times104% with no sign ofsaturation, in a field of 14T<missing VAR>, at T<missing VAR>  2K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 4, '%', 0]

H
###Antiferromagnetism and large magnetoresistance in GdBi single crystal|Gourav Dwari,Souvik Sasmal,Bishal Maity,Vikas Saini,Ruta Kulkarni,Arumugam Thamizhavel###
(811334, 811334)
 Shubnikov de Hass (SdH)oscillations have been observed in the high field range of themagnetoresistance with five different frequencies corresponding to the extremalareas of the Fermi surface.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 4, '%', 1]

Pt
###Spin current transport in hybrid Pt / multifunctional magnetoelectric Ga0.6Fe1.4O3 bilayers|Suvidyakumar Homkar,Elodie Martin,Benjamin Meunier,Alberto Anadon-Barcelona,Corinne Bouillet,Jon Gorchon,Karine Dumesnil,Christophe Lefèvre,François Roulland,Olivier Copie,Daniele Preziosi,Sébastien Petit-Watelot,Juan-Carlos Rojas-Sánchez,Nathalie Viart###
(811450, 811450)
Spin current transport in hybrid Pt / multifunctional magnetoelectric Ga0.6Fe1.4O3 bilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga0.6Fe1.4O3
###Spin current transport in hybrid Pt / multifunctional magnetoelectric Ga0.6Fe1.4O3 bilayers|Suvidyakumar Homkar,Elodie Martin,Benjamin Meunier,Alberto Anadon-Barcelona,Corinne Bouillet,Jon Gorchon,Karine Dumesnil,Christophe Lefèvre,François Roulland,Olivier Copie,Daniele Preziosi,Sébastien Petit-Watelot,Juan-Carlos Rojas-Sánchez,Nathalie Viart###
(811458, 811463)
Spin current transport in hybrid Pt / multifunctional magnetoelectric Ga0.6Fe1.4O3 bilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.27999999999999997,0,0,0,0,0.12,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Spin current transport in hybrid Pt / multifunctional magnetoelectric Ga0.6Fe1.4O3 bilayers|Suvidyakumar Homkar,Elodie Martin,Benjamin Meunier,Alberto Anadon-Barcelona,Corinne Bouillet,Jon Gorchon,Karine Dumesnil,Christophe Lefèvre,François Roulland,Olivier Copie,Daniele Preziosi,Sébastien Petit-Watelot,Juan-Carlos Rojas-Sánchez,Nathalie Viart###
(811518, 811518)
 Non ferromagnetic large spin-orbitcoupling heavy metal (NM) / ferromagnet (FM) heterostructures offer interestingelements of response to this issue, by granting the manipulation of the FM<missing VAR>magnetization by the NM<missing VAR> spin Hall effect (SHE) generated spin current.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Spin current transport in hybrid Pt / multifunctional magnetoelectric Ga0.6Fe1.4O3 bilayers|Suvidyakumar Homkar,Elodie Martin,Benjamin Meunier,Alberto Anadon-Barcelona,Corinne Bouillet,Jon Gorchon,Karine Dumesnil,Christophe Lefèvre,François Roulland,Olivier Copie,Daniele Preziosi,Sébastien Petit-Watelot,Juan-Carlos Rojas-Sánchez,Nathalie Viart###
(811527, 811527)
 Non ferromagnetic large spin-orbitcoupling heavy metal (NM) / ferromagnet (FM) heterostructures offer interestingelements of response to this issue, by granting the manipulation of the FM<missing VAR>magnetization by the NM<missing VAR> spin Hall effect (SHE) generated spin current.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Spin current transport in hybrid Pt / multifunctional magnetoelectric Ga0.6Fe1.4O3 bilayers|Suvidyakumar Homkar,Elodie Martin,Benjamin Meunier,Alberto Anadon-Barcelona,Corinne Bouillet,Jon Gorchon,Karine Dumesnil,Christophe Lefèvre,François Roulland,Olivier Copie,Daniele Preziosi,Sébastien Petit-Watelot,Juan-Carlos Rojas-Sánchez,Nathalie Viart###
(811563, 811563)
 Non ferromagnetic large spin-orbitcoupling heavy metal (NM) / ferromagnet (FM) heterostructures offer interestingelements of response to this issue, by granting the manipulation of the FM<missing VAR>magnetization by the NM<missing VAR> spin Hall effect (SHE) generated spin current.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Spin current transport in hybrid Pt / multifunctional magnetoelectric Ga0.6Fe1.4O3 bilayers|Suvidyakumar Homkar,Elodie Martin,Benjamin Meunier,Alberto Anadon-Barcelona,Corinne Bouillet,Jon Gorchon,Karine Dumesnil,Christophe Lefèvre,François Roulland,Olivier Copie,Daniele Preziosi,Sébastien Petit-Watelot,Juan-Carlos Rojas-Sánchez,Nathalie Viart###
(811573, 811573)
 Non ferromagnetic large spin-orbitcoupling heavy metal (NM) / ferromagnet (FM) heterostructures offer interestingelements of response to this issue, by granting the manipulation of the FM<missing VAR>magnetization by the NM<missing VAR> spin Hall effect (SHE) generated spin current.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SH
###Spin current transport in hybrid Pt / multifunctional magnetoelectric Ga0.6Fe1.4O3 bilayers|Suvidyakumar Homkar,Elodie Martin,Benjamin Meunier,Alberto Anadon-Barcelona,Corinne Bouillet,Jon Gorchon,Karine Dumesnil,Christophe Lefèvre,François Roulland,Olivier Copie,Daniele Preziosi,Sébastien Petit-Watelot,Juan-Carlos Rojas-Sánchez,Nathalie Viart###
(811583, 811584)
 Non ferromagnetic large spin-orbitcoupling heavy metal (NM) / ferromagnet (FM) heterostructures offer interestingelements of response to this issue, by granting the manipulation of the FM<missing VAR>magnetization by the NM<missing VAR> spin Hall effect (SHE) generated spin current.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Spin current transport in hybrid Pt / multifunctional magnetoelectric Ga0.6Fe1.4O3 bilayers|Suvidyakumar Homkar,Elodie Martin,Benjamin Meunier,Alberto Anadon-Barcelona,Corinne Bouillet,Jon Gorchon,Karine Dumesnil,Christophe Lefèvre,François Roulland,Olivier Copie,Daniele Preziosi,Sébastien Petit-Watelot,Juan-Carlos Rojas-Sánchez,Nathalie Viart###
(811657, 811657)
 We havestudied the spin current transfer processes between Pt and the multifunctionalmagnetoelectric Ga0.6Fe1.4O3 (G<missing VAR>FO).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga0.6Fe1.4O3
###Spin current transport in hybrid Pt / multifunctional magnetoelectric Ga0.6Fe1.4O3 bilayers|Suvidyakumar Homkar,Elodie Martin,Benjamin Meunier,Alberto Anadon-Barcelona,Corinne Bouillet,Jon Gorchon,Karine Dumesnil,Christophe Lefèvre,François Roulland,Olivier Copie,Daniele Preziosi,Sébastien Petit-Watelot,Juan-Carlos Rojas-Sánchez,Nathalie Viart###
(811668, 811673)
 We havestudied the spin current transfer processes between Pt and the multifunctionalmagnetoelectric Ga0.6Fe1.4O3 (G<missing VAR>FO).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.27999999999999997,0,0,0,0,0.12,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Spin current transport in hybrid Pt / multifunctional magnetoelectric Ga0.6Fe1.4O3 bilayers|Suvidyakumar Homkar,Elodie Martin,Benjamin Meunier,Alberto Anadon-Barcelona,Corinne Bouillet,Jon Gorchon,Karine Dumesnil,Christophe Lefèvre,François Roulland,Olivier Copie,Daniele Preziosi,Sébastien Petit-Watelot,Juan-Carlos Rojas-Sánchez,Nathalie Viart###
(811678, 811678)
 We havestudied the spin current transfer processes between Pt and the multifunctionalmagnetoelectric Ga0.6Fe1.4O3 (G<missing VAR>FO).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin current transport in hybrid Pt / multifunctional magnetoelectric Ga0.6Fe1.4O3 bilayers|Suvidyakumar Homkar,Elodie Martin,Benjamin Meunier,Alberto Anadon-Barcelona,Corinne Bouillet,Jon Gorchon,Karine Dumesnil,Christophe Lefèvre,François Roulland,Olivier Copie,Daniele Preziosi,Sébastien Petit-Watelot,Juan-Carlos Rojas-Sánchez,Nathalie Viart###
(811682, 811682)
 In particular, via angular dependentmagnetotransport measurements, we were able to differentiate between magneticproximity effect (MPE)-induced anisotropic magnetoresistance (AMR) and spinHall magnetoresistance (SMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin current transport in hybrid Pt / multifunctional magnetoelectric Ga0.6Fe1.4O3 bilayers|Suvidyakumar Homkar,Elodie Martin,Benjamin Meunier,Alberto Anadon-Barcelona,Corinne Bouillet,Jon Gorchon,Karine Dumesnil,Christophe Lefèvre,François Roulland,Olivier Copie,Daniele Preziosi,Sébastien Petit-Watelot,Juan-Carlos Rojas-Sánchez,Nathalie Viart###
(811746, 811746)
 In particular, via angular dependentmagnetotransport measurements, we were able to differentiate between magneticproximity effect (MPE)-induced anisotropic magnetoresistance (AMR) and spinHall magnetoresistance (SMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin current transport in hybrid Pt / multifunctional magnetoelectric Ga0.6Fe1.4O3 bilayers|Suvidyakumar Homkar,Elodie Martin,Benjamin Meunier,Alberto Anadon-Barcelona,Corinne Bouillet,Jon Gorchon,Karine Dumesnil,Christophe Lefèvre,François Roulland,Olivier Copie,Daniele Preziosi,Sébastien Petit-Watelot,Juan-Carlos Rojas-Sánchez,Nathalie Viart###
(811760, 811760)
 Our analysis shows that SMR is the dominantphenomenon at all temperatures and is the only one to be considered near roomtemperature, with a magnitude comparable to those observed in Pd/YIG<missing VAR> or Pt/YIG<missing VAR>heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pd/YI
###Spin current transport in hybrid Pt / multifunctional magnetoelectric Ga0.6Fe1.4O3 bilayers|Suvidyakumar Homkar,Elodie Martin,Benjamin Meunier,Alberto Anadon-Barcelona,Corinne Bouillet,Jon Gorchon,Karine Dumesnil,Christophe Lefèvre,François Roulland,Olivier Copie,Daniele Preziosi,Sébastien Petit-Watelot,Juan-Carlos Rojas-Sánchez,Nathalie Viart###
(811819, 811822)
 Our analysis shows that SMR is the dominantphenomenon at all temperatures and is the only one to be considered near roomtemperature, with a magnitude comparable to those observed in Pd/YIG<missing VAR> or Pt/YIG<missing VAR>heterostructures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Pt/YI
###Spin current transport in hybrid Pt / multifunctional magnetoelectric Ga0.6Fe1.4O3 bilayers|Suvidyakumar Homkar,Elodie Martin,Benjamin Meunier,Alberto Anadon-Barcelona,Corinne Bouillet,Jon Gorchon,Karine Dumesnil,Christophe Lefèvre,François Roulland,Olivier Copie,Daniele Preziosi,Sébastien Petit-Watelot,Juan-Carlos Rojas-Sánchez,Nathalie Viart###
(811827, 811830)
 Our analysis shows that SMR is the dominantphenomenon at all temperatures and is the only one to be considered near roomtemperature, with a magnitude comparable to those observed in Pd/YIG<missing VAR> or Pt/YIG<missing VAR>heterostructures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

FO
###Spin current transport in hybrid Pt / multifunctional magnetoelectric Ga0.6Fe1.4O3 bilayers|Suvidyakumar Homkar,Elodie Martin,Benjamin Meunier,Alberto Anadon-Barcelona,Corinne Bouillet,Jon Gorchon,Karine Dumesnil,Christophe Lefèvre,François Roulland,Olivier Copie,Daniele Preziosi,Sébastien Petit-Watelot,Juan-Carlos Rojas-Sánchez,Nathalie Viart###
(811848, 811849)
 These results indicate that magnetoelectric G<missing VAR>FO thin filmsshow promises for achieving an electric-field control of the spin currentgeneration in NM<missing VAR>/FM<missing VAR> oxide-based heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Spin current transport in hybrid Pt / multifunctional magnetoelectric Ga0.6Fe1.4O3 bilayers|Suvidyakumar Homkar,Elodie Martin,Benjamin Meunier,Alberto Anadon-Barcelona,Corinne Bouillet,Jon Gorchon,Karine Dumesnil,Christophe Lefèvre,François Roulland,Olivier Copie,Daniele Preziosi,Sébastien Petit-Watelot,Juan-Carlos Rojas-Sánchez,Nathalie Viart###
(811885, 811885)
 These results indicate that magnetoelectric G<missing VAR>FO thin filmsshow promises for achieving an electric-field control of the spin currentgeneration in NM<missing VAR>/FM<missing VAR> oxide-based heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Spin current transport in hybrid Pt / multifunctional magnetoelectric Ga0.6Fe1.4O3 bilayers|Suvidyakumar Homkar,Elodie Martin,Benjamin Meunier,Alberto Anadon-Barcelona,Corinne Bouillet,Jon Gorchon,Karine Dumesnil,Christophe Lefèvre,François Roulland,Olivier Copie,Daniele Preziosi,Sébastien Petit-Watelot,Juan-Carlos Rojas-Sánchez,Nathalie Viart###
(811888, 811888)
 These results indicate that magnetoelectric G<missing VAR>FO thin filmsshow promises for achieving an electric-field control of the spin currentgeneration in NM<missing VAR>/FM<missing VAR> oxide-based heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CsV3Sb5
###Discovery of charge-4e and charge-6e superconductivity in kagome superconductor CsV3Sb5|Jun Ge,Pinyuan Wang,Ying Xing,Qiangwei Yin,Hechang Lei,Ziqiang Wang,Jian Wang###
(811930, 811934)
Discovery of charge-4e<missing VAR> and charge-6e<missing VAR> superconductivity in kagome superconductor CsV3Sb5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5555555555555556,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CsV3Sb5
###Discovery of charge-4e and charge-6e superconductivity in kagome superconductor CsV3Sb5|Jun Ge,Pinyuan Wang,Ying Xing,Qiangwei Yin,Hechang Lei,Ziqiang Wang,Jian Wang###
(812095, 812099)
 Here we report the discovery of the charge-4e<missing VAR> and charge-6e<missing VAR>superconductivity in nanopatterned ring devices fabricated using the newtransition-metal kagome lattice superconductor CsV3Sb5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5555555555555556,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(BCS)
###Discovery of charge-4e and charge-6e superconductivity in kagome superconductor CsV3Sb5|Jun Ge,Pinyuan Wang,Ying Xing,Qiangwei Yin,Hechang Lei,Ziqiang Wang,Jian Wang###
(812412, 812416)
 Ourobservations provide direct experimental evidence for the existence ofmacroscopic phase coherent paired quantum matter beyond the charge-2e<missing VAR>superconductors described by the Bardeen-Cooper-Schrieffer (BCS) theory, andreveal new insights into the intertwined and vestigial electronic ordersassociated with the primary pair density wave state in kagome superconductors.
Featurization successful!
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Giant magnetoresistance, Fermi surface topology, Shoenberg effect and vanishing quantum oscillations in type-II Dirac semimetal candidates MoSi$_2$ and WSi$_2$|Orest Pavlosiuk,Przemysław Wojciech Swatek,Jian-Ping Wang,Piotr Wiśniewski,Dariusz Kaczorowski###
(812504, 812505)
Giant magnetoresistance, Fermi surface topology, Shoenberg effect and vanishing quantum oscillations in type-II Dirac semimetal candidates MoSi2 and WSi2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[171.0, 3, 'D', 3],[260.0, 5, ',', 5],[299.0, -98, ',', 6],[307.0, 2, ',', 6],[385.0, 25, ',', 7],[399.0, 12, ',', 7],[465.0, 480, 'meV', 9],[468.0, 710, 'meV', 9]

MoSi2
###Giant magnetoresistance, Fermi surface topology, Shoenberg effect and vanishing quantum oscillations in type-II Dirac semimetal candidates MoSi$_2$ and WSi$_2$|Orest Pavlosiuk,Przemysław Wojciech Swatek,Jian-Ping Wang,Piotr Wiśniewski,Dariusz Kaczorowski###
(812513, 812515)
Giant magnetoresistance, Fermi surface topology, Shoenberg effect and vanishing quantum oscillations in type-II Dirac semimetal candidates MoSi2 and WSi2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 3, 'D', 3],[250.0, 5, ',', 5],[289.0, -98, ',', 6],[297.0, 2, ',', 6],[375.0, 25, ',', 7],[389.0, 12, ',', 7],[455.0, 480, 'meV', 9],[458.0, 710, 'meV', 9]

WSi2
###Giant magnetoresistance, Fermi surface topology, Shoenberg effect and vanishing quantum oscillations in type-II Dirac semimetal candidates MoSi$_2$ and WSi$_2$|Orest Pavlosiuk,Przemysław Wojciech Swatek,Jian-Ping Wang,Piotr Wiśniewski,Dariusz Kaczorowski###
(812519, 812521)
Giant magnetoresistance, Fermi surface topology, Shoenberg effect and vanishing quantum oscillations in type-II Dirac semimetal candidates MoSi2 and WSi2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 3, 'D', 3],[244.0, 5, ',', 5],[283.0, -98, ',', 6],[291.0, 2, ',', 6],[369.0, 25, ',', 7],[383.0, 12, ',', 7],[449.0, 480, 'meV', 9],[452.0, 710, 'meV', 9]

MoSi2
###Giant magnetoresistance, Fermi surface topology, Shoenberg effect and vanishing quantum oscillations in type-II Dirac semimetal candidates MoSi$_2$ and WSi$_2$|Orest Pavlosiuk,Przemysław Wojciech Swatek,Jian-Ping Wang,Piotr Wiśniewski,Dariusz Kaczorowski###
(812569, 812571)
 We performed comprehensive theoretical and experimental studies of theelectronic structure and the Fermi surface topology of two novel quantummaterials, MoSi2 and WSi2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 3, 'D', 2],[194.0, 5, ',', 4],[233.0, -98, ',', 5],[241.0, 2, ',', 5],[319.0, 25, ',', 6],[333.0, 12, ',', 6],[399.0, 480, 'meV', 8],[402.0, 710, 'meV', 8]

WSi2
###Giant magnetoresistance, Fermi surface topology, Shoenberg effect and vanishing quantum oscillations in type-II Dirac semimetal candidates MoSi$_2$ and WSi$_2$|Orest Pavlosiuk,Przemysław Wojciech Swatek,Jian-Ping Wang,Piotr Wiśniewski,Dariusz Kaczorowski###
(812575, 812577)
 We performed comprehensive theoretical and experimental studies of theelectronic structure and the Fermi surface topology of two novel quantummaterials, MoSi2 and WSi2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 3, 'D', 2],[188.0, 5, ',', 4],[227.0, -98, ',', 5],[235.0, 2, ',', 5],[313.0, 25, ',', 6],[327.0, 12, ',', 6],[393.0, 480, 'meV', 8],[396.0, 710, 'meV', 8]

MoSi2
###Giant magnetoresistance, Fermi surface topology, Shoenberg effect and vanishing quantum oscillations in type-II Dirac semimetal candidates MoSi$_2$ and WSi$_2$|Orest Pavlosiuk,Przemysław Wojciech Swatek,Jian-Ping Wang,Piotr Wiśniewski,Dariusz Kaczorowski###
(812663, 812665)
 We established that the Fermi surface sheetsin MoSi2 and WSi2 consist of 3D dumbbell-shaped hole-like pockets androsette-shaped electron-like pockets, with nearly equal volumes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 3, 'D', 0],[100.0, 5, ',', 2],[139.0, -98, ',', 3],[147.0, 2, ',', 3],[225.0, 25, ',', 4],[239.0, 12, ',', 4],[305.0, 480, 'meV', 6],[308.0, 710, 'meV', 6]

WSi2
###Giant magnetoresistance, Fermi surface topology, Shoenberg effect and vanishing quantum oscillations in type-II Dirac semimetal candidates MoSi$_2$ and WSi$_2$|Orest Pavlosiuk,Przemysław Wojciech Swatek,Jian-Ping Wang,Piotr Wiśniewski,Dariusz Kaczorowski###
(812669, 812671)
 We established that the Fermi surface sheetsin MoSi2 and WSi2 consist of 3D dumbbell-shaped hole-like pockets androsette-shaped electron-like pockets, with nearly equal volumes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 3, 'D', 0],[94.0, 5, ',', 2],[133.0, -98, ',', 3],[141.0, 2, ',', 3],[219.0, 25, ',', 4],[233.0, 12, ',', 4],[299.0, 480, 'meV', 6],[302.0, 710, 'meV', 6]

In
###Giant magnetoresistance, Fermi surface topology, Shoenberg effect and vanishing quantum oscillations in type-II Dirac semimetal candidates MoSi$_2$ and WSi$_2$|Orest Pavlosiuk,Przemysław Wojciech Swatek,Jian-Ping Wang,Piotr Wiśniewski,Dariusz Kaczorowski###
(812741, 812741)
 In conjunction, the magnetoresistance attains giant values of104 and 105,% for WSi2 and MoSi2, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 3, 'D', 2],[24.0, 5, ',', 0],[63.0, -98, ',', 1],[71.0, 2, ',', 1],[149.0, 25, ',', 2],[163.0, 12, ',', 2],[229.0, 480, 'meV', 4],[232.0, 710, 'meV', 4]

WSi2
###Giant magnetoresistance, Fermi surface topology, Shoenberg effect and vanishing quantum oscillations in type-II Dirac semimetal candidates MoSi$_2$ and WSi$_2$|Orest Pavlosiuk,Przemysław Wojciech Swatek,Jian-Ping Wang,Piotr Wiśniewski,Dariusz Kaczorowski###
(812771, 812773)
 In conjunction, the magnetoresistance attains giant values of104 and 105,% for WSi2 and MoSi2, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 3, 'D', 2],[6.0, 5, ',', 0],[31.0, -98, ',', 1],[39.0, 2, ',', 1],[117.0, 25, ',', 2],[131.0, 12, ',', 2],[197.0, 480, 'meV', 4],[200.0, 710, 'meV', 4]

MoSi2
###Giant magnetoresistance, Fermi surface topology, Shoenberg effect and vanishing quantum oscillations in type-II Dirac semimetal candidates MoSi$_2$ and WSi$_2$|Orest Pavlosiuk,Przemysław Wojciech Swatek,Jian-Ping Wang,Piotr Wiśniewski,Dariusz Kaczorowski###
(812777, 812779)
 In conjunction, the magnetoresistance attains giant values of104 and 105,% for WSi2 and MoSi2, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 3, 'D', 2],[12.0, 5, ',', 0],[25.0, -98, ',', 1],[33.0, 2, ',', 1],[111.0, 25, ',', 2],[125.0, 12, ',', 2],[191.0, 480, 'meV', 4],[194.0, 710, 'meV', 4]

In
###Giant magnetoresistance, Fermi surface topology, Shoenberg effect and vanishing quantum oscillations in type-II Dirac semimetal candidates MoSi$_2$ and WSi$_2$|Orest Pavlosiuk,Przemysław Wojciech Swatek,Jian-Ping Wang,Piotr Wiśniewski,Dariusz Kaczorowski###
(812785, 812785)
 In turn, theanisotropic magnetoresistance achieves -95 and -98,% at T<missing VAR>2,K and inB14,T<missing VAR> for WSi2 and MoSi2, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 3, 'D', 3],[20.0, 5, ',', 1],[19.0, -98, ',', 0],[27.0, 2, ',', 0],[105.0, 25, ',', 1],[119.0, 12, ',', 1],[185.0, 480, 'meV', 3],[188.0, 710, 'meV', 3]

K
###Giant magnetoresistance, Fermi surface topology, Shoenberg effect and vanishing quantum oscillations in type-II Dirac semimetal candidates MoSi$_2$ and WSi$_2$|Orest Pavlosiuk,Przemysław Wojciech Swatek,Jian-Ping Wang,Piotr Wiśniewski,Dariusz Kaczorowski###
(812814, 812814)
 In turn, theanisotropic magnetoresistance achieves -95 and -98,% at T<missing VAR>2,K and inB14,T<missing VAR> for WSi2 and MoSi2, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 3, 'D', 3],[49.0, 5, ',', 1],[10.0, -98, ',', 0],[2.0, 2, ',', 0],[76.0, 25, ',', 1],[90.0, 12, ',', 1],[156.0, 480, 'meV', 3],[159.0, 710, 'meV', 3]

B14
###Giant magnetoresistance, Fermi surface topology, Shoenberg effect and vanishing quantum oscillations in type-II Dirac semimetal candidates MoSi$_2$ and WSi$_2$|Orest Pavlosiuk,Przemysław Wojciech Swatek,Jian-Ping Wang,Piotr Wiśniewski,Dariusz Kaczorowski###
(812821, 812822)
 In turn, theanisotropic magnetoresistance achieves -95 and -98,% at T<missing VAR>2,K and inB14,T<missing VAR> for WSi2 and MoSi2, respectively.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 3, 'D', 3],[56.0, 5, ',', 1],[17.0, -98, ',', 0],[9.0, 2, ',', 0],[68.0, 25, ',', 1],[82.0, 12, ',', 1],[148.0, 480, 'meV', 3],[151.0, 710, 'meV', 3]

WSi2
###Giant magnetoresistance, Fermi surface topology, Shoenberg effect and vanishing quantum oscillations in type-II Dirac semimetal candidates MoSi$_2$ and WSi$_2$|Orest Pavlosiuk,Przemysław Wojciech Swatek,Jian-Ping Wang,Piotr Wiśniewski,Dariusz Kaczorowski###
(812828, 812830)
 In turn, theanisotropic magnetoresistance achieves -95 and -98,% at T<missing VAR>2,K and inB14,T<missing VAR> for WSi2 and MoSi2, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 3, 'D', 3],[63.0, 5, ',', 1],[24.0, -98, ',', 0],[16.0, 2, ',', 0],[60.0, 25, ',', 1],[74.0, 12, ',', 1],[140.0, 480, 'meV', 3],[143.0, 710, 'meV', 3]

MoSi2
###Giant magnetoresistance, Fermi surface topology, Shoenberg effect and vanishing quantum oscillations in type-II Dirac semimetal candidates MoSi$_2$ and WSi$_2$|Orest Pavlosiuk,Przemysław Wojciech Swatek,Jian-Ping Wang,Piotr Wiśniewski,Dariusz Kaczorowski###
(812834, 812836)
 In turn, theanisotropic magnetoresistance achieves -95 and -98,% at T<missing VAR>2,K and inB14,T<missing VAR> for WSi2 and MoSi2, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 3, 'D', 3],[69.0, 5, ',', 1],[30.0, -98, ',', 0],[22.0, 2, ',', 0],[54.0, 25, ',', 1],[68.0, 12, ',', 1],[134.0, 480, 'meV', 3],[137.0, 710, 'meV', 3]

K
###Giant magnetoresistance, Fermi surface topology, Shoenberg effect and vanishing quantum oscillations in type-II Dirac semimetal candidates MoSi$_2$ and WSi$_2$|Orest Pavlosiuk,Przemysław Wojciech Swatek,Jian-Ping Wang,Piotr Wiśniewski,Dariusz Kaczorowski###
(812892, 812892)
 Furthermore, for bothcompounds we observed the Shoenberg effect in their Shubnikov-de Haasoscillations that persisted at as high temperature as T<missing VAR>25,K in MoSi2 andT<missing VAR>12,K in WSi2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[216.0, 3, 'D', 4],[127.0, 5, ',', 2],[88.0, -98, ',', 1],[80.0, 2, ',', 1],[2.0, 25, ',', 0],[12.0, 12, ',', 0],[78.0, 480, 'meV', 2],[81.0, 710, 'meV', 2]

MoSi2
###Giant magnetoresistance, Fermi surface topology, Shoenberg effect and vanishing quantum oscillations in type-II Dirac semimetal candidates MoSi$_2$ and WSi$_2$|Orest Pavlosiuk,Przemysław Wojciech Swatek,Jian-Ping Wang,Piotr Wiśniewski,Dariusz Kaczorowski###
(812896, 812898)
 Furthermore, for bothcompounds we observed the Shoenberg effect in their Shubnikov-de Haasoscillations that persisted at as high temperature as T<missing VAR>25,K in MoSi2 andT<missing VAR>12,K in WSi2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[220.0, 3, 'D', 4],[131.0, 5, ',', 2],[92.0, -98, ',', 1],[84.0, 2, ',', 1],[6.0, 25, ',', 0],[6.0, 12, ',', 0],[72.0, 480, 'meV', 2],[75.0, 710, 'meV', 2]

K
###Giant magnetoresistance, Fermi surface topology, Shoenberg effect and vanishing quantum oscillations in type-II Dirac semimetal candidates MoSi$_2$ and WSi$_2$|Orest Pavlosiuk,Przemysław Wojciech Swatek,Jian-Ping Wang,Piotr Wiśniewski,Dariusz Kaczorowski###
(812906, 812906)
 Furthermore, for bothcompounds we observed the Shoenberg effect in their Shubnikov-de Haasoscillations that persisted at as high temperature as T<missing VAR>25,K in MoSi2 andT<missing VAR>12,K in WSi2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[230.0, 3, 'D', 4],[141.0, 5, ',', 2],[102.0, -98, ',', 1],[94.0, 2, ',', 1],[16.0, 25, ',', 0],[2.0, 12, ',', 0],[64.0, 480, 'meV', 2],[67.0, 710, 'meV', 2]

WSi2
###Giant magnetoresistance, Fermi surface topology, Shoenberg effect and vanishing quantum oscillations in type-II Dirac semimetal candidates MoSi$_2$ and WSi$_2$|Orest Pavlosiuk,Przemysław Wojciech Swatek,Jian-Ping Wang,Piotr Wiśniewski,Dariusz Kaczorowski###
(812910, 812912)
 Furthermore, for bothcompounds we observed the Shoenberg effect in their Shubnikov-de Haasoscillations that persisted at as high temperature as T<missing VAR>25,K in MoSi2 andT<missing VAR>12,K in WSi2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[234.0, 3, 'D', 4],[145.0, 5, ',', 2],[106.0, -98, ',', 1],[98.0, 2, ',', 1],[20.0, 25, ',', 0],[6.0, 12, ',', 0],[58.0, 480, 'meV', 2],[61.0, 710, 'meV', 2]

In
###Giant magnetoresistance, Fermi surface topology, Shoenberg effect and vanishing quantum oscillations in type-II Dirac semimetal candidates MoSi$_2$ and WSi$_2$|Orest Pavlosiuk,Przemysław Wojciech Swatek,Jian-Ping Wang,Piotr Wiśniewski,Dariusz Kaczorowski###
(812915, 812915)
 In addition, we found for MoSi2 a rarely observedspin-zero phenomenon.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[239.0, 3, 'D', 5],[150.0, 5, ',', 3],[111.0, -98, ',', 2],[103.0, 2, ',', 2],[25.0, 25, ',', 1],[11.0, 12, ',', 1],[55.0, 480, 'meV', 1],[58.0, 710, 'meV', 1]

MoSi2
###Giant magnetoresistance, Fermi surface topology, Shoenberg effect and vanishing quantum oscillations in type-II Dirac semimetal candidates MoSi$_2$ and WSi$_2$|Orest Pavlosiuk,Przemysław Wojciech Swatek,Jian-Ping Wang,Piotr Wiśniewski,Dariusz Kaczorowski###
(812926, 812928)
 In addition, we found for MoSi2 a rarely observedspin-zero phenomenon.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[250.0, 3, 'D', 5],[161.0, 5, ',', 3],[122.0, -98, ',', 2],[114.0, 2, ',', 2],[36.0, 25, ',', 1],[22.0, 12, ',', 1],[42.0, 480, 'meV', 1],[45.0, 710, 'meV', 1]

II
###Giant magnetoresistance, Fermi surface topology, Shoenberg effect and vanishing quantum oscillations in type-II Dirac semimetal candidates MoSi$_2$ and WSi$_2$|Orest Pavlosiuk,Przemysław Wojciech Swatek,Jian-Ping Wang,Piotr Wiśniewski,Dariusz Kaczorowski###
(812960, 812961)
 Remarkably, the electronic structure calculationsrevealed type-II Dirac cones located near 480 meV and 710 meV above the Fermilevel in MoSi2 and WSi2, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[284.0, 3, 'D', 6],[195.0, 5, ',', 4],[156.0, -98, ',', 3],[148.0, 2, ',', 3],[70.0, 25, ',', 2],[56.0, 12, ',', 2],[9.0, 480, 'meV', 0],[12.0, 710, 'meV', 0]

MoSi2
###Giant magnetoresistance, Fermi surface topology, Shoenberg effect and vanishing quantum oscillations in type-II Dirac semimetal candidates MoSi$_2$ and WSi$_2$|Orest Pavlosiuk,Przemysław Wojciech Swatek,Jian-Ping Wang,Piotr Wiśniewski,Dariusz Kaczorowski###
(812986, 812988)
 Remarkably, the electronic structure calculationsrevealed type-II Dirac cones located near 480 meV and 710 meV above the Fermilevel in MoSi2 and WSi2, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[310.0, 3, 'D', 6],[221.0, 5, ',', 4],[182.0, -98, ',', 3],[174.0, 2, ',', 3],[96.0, 25, ',', 2],[82.0, 12, ',', 2],[16.0, 480, 'meV', 0],[13.0, 710, 'meV', 0]

WSi2
###Giant magnetoresistance, Fermi surface topology, Shoenberg effect and vanishing quantum oscillations in type-II Dirac semimetal candidates MoSi$_2$ and WSi$_2$|Orest Pavlosiuk,Przemysław Wojciech Swatek,Jian-Ping Wang,Piotr Wiśniewski,Dariusz Kaczorowski###
(812992, 812994)
 Remarkably, the electronic structure calculationsrevealed type-II Dirac cones located near 480 meV and 710 meV above the Fermilevel in MoSi2 and WSi2, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[316.0, 3, 'D', 6],[227.0, 5, ',', 4],[188.0, -98, ',', 3],[180.0, 2, ',', 3],[102.0, 25, ',', 2],[88.0, 12, ',', 2],[22.0, 480, 'meV', 0],[19.0, 710, 'meV', 0]

EuCd2As2
###Consecutive topological phase transitions and colossal magnetoresistance in a magnetic topological semimetal|Feng Du,Lin Yang,Zhiyong Nie,Ninghua Wu,Yong Li,Shuaishuai Luo,Ye Chen,Dajun Su,Michael Smidman,Youguo Shi,Chao Cao,Frank Steglich,Yu Song,Huiqiu Yuan###
(813138, 813142)
 Here, we report measurements of the electrical resistivity ofEuCd2As2 under pressure, which show an intriguing insulating dome atpressures between p<missing VAR>rm c<missing VAR>1sim1.0G<missing VAR>Pa and p<missing VAR>rm c<missing VAR>2sim2.0G<missing VAR>Pa, situatedbetween two regimes with metallic transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 5, '%', 1]

Pa
###Consecutive topological phase transitions and colossal magnetoresistance in a magnetic topological semimetal|Feng Du,Lin Yang,Zhiyong Nie,Ninghua Wu,Yong Li,Shuaishuai Luo,Ye Chen,Dajun Su,Michael Smidman,Youguo Shi,Chao Cao,Frank Steglich,Yu Song,Huiqiu Yuan###
(813176, 813176)
 Here, we report measurements of the electrical resistivity ofEuCd2As2 under pressure, which show an intriguing insulating dome atpressures between p<missing VAR>rm c<missing VAR>1sim1.0G<missing VAR>Pa and p<missing VAR>rm c<missing VAR>2sim2.0G<missing VAR>Pa, situatedbetween two regimes with metallic transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 5, '%', 1]

Pa
###Consecutive topological phase transitions and colossal magnetoresistance in a magnetic topological semimetal|Feng Du,Lin Yang,Zhiyong Nie,Ninghua Wu,Yong Li,Shuaishuai Luo,Ye Chen,Dajun Su,Michael Smidman,Youguo Shi,Chao Cao,Frank Steglich,Yu Song,Huiqiu Yuan###
(813188, 813188)
 Here, we report measurements of the electrical resistivity ofEuCd2As2 under pressure, which show an intriguing insulating dome atpressures between p<missing VAR>rm c<missing VAR>1sim1.0G<missing VAR>Pa and p<missing VAR>rm c<missing VAR>2sim2.0G<missing VAR>Pa, situatedbetween two regimes with metallic transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 5, '%', 1]

EuCd2As2
###Consecutive topological phase transitions and colossal magnetoresistance in a magnetic topological semimetal|Feng Du,Lin Yang,Zhiyong Nie,Ninghua Wu,Yong Li,Shuaishuai Luo,Ye Chen,Dajun Su,Michael Smidman,Youguo Shi,Chao Cao,Frank Steglich,Yu Song,Huiqiu Yuan###
(813317, 813321)
 First-principles calculations reveal that the dramatic evolutionof the resistivity under pressure is due to consecutive transitions ofEuCd2As2 from a magnetic topological insulator to a trivial insulator,and then to a Weyl semimetal, with the latter resulting from a pressure-inducedchange in the magnetic ground state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 5, '%', 1]

EuCd2As2
###Consecutive topological phase transitions and colossal magnetoresistance in a magnetic topological semimetal|Feng Du,Lin Yang,Zhiyong Nie,Ninghua Wu,Yong Li,Shuaishuai Luo,Ye Chen,Dajun Su,Michael Smidman,Youguo Shi,Chao Cao,Frank Steglich,Yu Song,Huiqiu Yuan###
(813420, 813424)
 Similarly, the colossal magnetoresistanceresults from a field-induced polarization of the magnetic moments, transformingEuCd2As2 from a trivial insulator to a Weyl semimetal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 5, '%', 2]

Bi4Br4
###Quantum transport evidence of the boundary states and Lifshitz transition in Bi$_4$Br$_4$|Dong-Yun Chen,Dashuai Ma,Junxi Duan,Dong Chen,Haiwen Liu,Junfeng Han,Yugui Yao###
(813519, 813522)
Quantum transport evidence of the boundary states and Lifshitz transition in Bi4Br4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi4Br4
###Quantum transport evidence of the boundary states and Lifshitz transition in Bi$_4$Br$_4$|Dong-Yun Chen,Dashuai Ma,Junxi Duan,Dong Chen,Haiwen Liu,Junfeng Han,Yugui Yao###
(813541, 813544)
 The quasi-one-dimensional van der Waals compound Bi4Br4 was recentlyfound to be a promising high-order topological insulator with exotic electronicstates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Quantum transport evidence of the boundary states and Lifshitz transition in Bi$_4$Br$_4$|Dong-Yun Chen,Dashuai Ma,Junxi Duan,Dong Chen,Haiwen Liu,Junfeng Han,Yugui Yao###
(813579, 813579)
 In this paper, we study the electrical transport properties ofBi4Br4 bulk crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi4Br4
###Quantum transport evidence of the boundary states and Lifshitz transition in Bi$_4$Br$_4$|Dong-Yun Chen,Dashuai Ma,Junxi Duan,Dong Chen,Haiwen Liu,Junfeng Han,Yugui Yao###
(813601, 813604)
 In this paper, we study the electrical transport properties ofBi4Br4 bulk crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Quantum transport evidence of the boundary states and Lifshitz transition in Bi$_4$Br$_4$|Dong-Yun Chen,Dashuai Ma,Junxi Duan,Dong Chen,Haiwen Liu,Junfeng Han,Yugui Yao###
(813653, 813653)
 In the low-concentration sample, two-dimensionalquantum oscillations are clearly observed in the magnetoresistancemeasurements, which are attributed to the band-bending-induced surface state onthe (001) facet.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Quantum transport evidence of the boundary states and Lifshitz transition in Bi$_4$Br$_4$|Dong-Yun Chen,Dashuai Ma,Junxi Duan,Dong Chen,Haiwen Liu,Junfeng Han,Yugui Yao###
(813721, 813721)
 In the high-concentration sample, the angularmagnetoresistance exhibits two pairs of symmetrical sharp valleys with anangular difference close to the angle between the crystal planes (001) and(100).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi4Br4
###Quantum transport evidence of the boundary states and Lifshitz transition in Bi$_4$Br$_4$|Dong-Yun Chen,Dashuai Ma,Junxi Duan,Dong Chen,Haiwen Liu,Junfeng Han,Yugui Yao###
(813928, 813931)
 These results shed light on the abundant surface andboundary state transport signals and the temperature-induced Lifshitztransition in Bi4Br4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Al2O3
###Activated hopping transport in nematic conducting aerogel at low temperatures|V. I. Tsebro,E. G. Nikolaev,L. B. Lugansky,M. S. Kutuzov,R. A. Khmel'nitskii,A. A. Tonkikh,A. I. Khar'kovskii###
(813987, 813990)
 The transport properties of nematic aerogels, which consist of highlyoriented Al2O3cdotSiO2 nanofibers coated with a graphene shell with alarge number of defects, are studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 0.4, 'to', 1],[110.0, 0.9, 'when', 1],[294.0, 4.2, 'K', 4]

SiO2
###Activated hopping transport in nematic conducting aerogel at low temperatures|V. I. Tsebro,E. G. Nikolaev,L. B. Lugansky,M. S. Kutuzov,R. A. Khmel'nitskii,A. A. Tonkikh,A. I. Khar'kovskii###
(813992, 813994)
 The transport properties of nematic aerogels, which consist of highlyoriented Al2O3cdotSiO2 nanofibers coated with a graphene shell with alarge number of defects, are studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 0.4, 'to', 1],[106.0, 0.9, 'when', 1],[290.0, 4.2, 'K', 4]

K
###Activated hopping transport in nematic conducting aerogel at low temperatures|V. I. Tsebro,E. G. Nikolaev,L. B. Lugansky,M. S. Kutuzov,R. A. Khmel'nitskii,A. A. Tonkikh,A. I. Khar'kovskii###
(814053, 814053)
 The temperature dependences of theelectrical resistivity in the range of 9-40K strictly follow the formuladerived to describe the variable range hopping (VR<missing VAR>H) conductivity, in whichexponent alpha changes from 0.4 to 0.9 when the number of layers in thegraphene shell decreases from 4-6 to 1-2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 0.4, 'to', 0],[47.0, 0.9, 'when', 0],[231.0, 4.2, 'K', 3]

V
###Activated hopping transport in nematic conducting aerogel at low temperatures|V. I. Tsebro,E. G. Nikolaev,L. B. Lugansky,M. S. Kutuzov,R. A. Khmel'nitskii,A. A. Tonkikh,A. I. Khar'kovskii###
(814079, 814079)
 The temperature dependences of theelectrical resistivity in the range of 9-40K strictly follow the formuladerived to describe the variable range hopping (VR<missing VAR>H) conductivity, in whichexponent alpha changes from 0.4 to 0.9 when the number of layers in thegraphene shell decreases from 4-6 to 1-2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 0.4, 'to', 0],[21.0, 0.9, 'when', 0],[205.0, 4.2, 'K', 3]

H
###Activated hopping transport in nematic conducting aerogel at low temperatures|V. I. Tsebro,E. G. Nikolaev,L. B. Lugansky,M. S. Kutuzov,R. A. Khmel'nitskii,A. A. Tonkikh,A. I. Khar'kovskii###
(814081, 814081)
 The temperature dependences of theelectrical resistivity in the range of 9-40K strictly follow the formuladerived to describe the variable range hopping (VR<missing VAR>H) conductivity, in whichexponent alpha changes from 0.4 to 0.9 when the number of layers in thegraphene shell decreases from 4-6 to 1-2.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 0.4, 'to', 0],[19.0, 0.9, 'when', 0],[203.0, 4.2, 'K', 3]

V
###Activated hopping transport in nematic conducting aerogel at low temperatures|V. I. Tsebro,E. G. Nikolaev,L. B. Lugansky,M. S. Kutuzov,R. A. Khmel'nitskii,A. A. Tonkikh,A. I. Khar'kovskii###
(814250, 814250)
 The fact that alpha approachesunity at the minimum graphene shell thickness indicates a gradual transitionfrom VR<missing VAR>H transport to nearest neighbor hopping (NNH) transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 0.4, 'to', 2],[150.0, 0.9, 'when', 2],[34.0, 4.2, 'K', 1]

H
###Activated hopping transport in nematic conducting aerogel at low temperatures|V. I. Tsebro,E. G. Nikolaev,L. B. Lugansky,M. S. Kutuzov,R. A. Khmel'nitskii,A. A. Tonkikh,A. I. Khar'kovskii###
(814252, 814252)
 The fact that alpha approachesunity at the minimum graphene shell thickness indicates a gradual transitionfrom VR<missing VAR>H transport to nearest neighbor hopping (NNH) transport.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 0.4, 'to', 2],[152.0, 0.9, 'when', 2],[32.0, 4.2, 'K', 1]

(NNH)
###Activated hopping transport in nematic conducting aerogel at low temperatures|V. I. Tsebro,E. G. Nikolaev,L. B. Lugansky,M. S. Kutuzov,R. A. Khmel'nitskii,A. A. Tonkikh,A. I. Khar'kovskii###
(814264, 814268)
 The fact that alpha approachesunity at the minimum graphene shell thickness indicates a gradual transitionfrom VR<missing VAR>H transport to nearest neighbor hopping (NNH) transport.
Featurization successful!
0.3333333333333333,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 0.4, 'to', 2],[164.0, 0.9, 'when', 2],[16.0, 4.2, 'K', 1]

GaAs
###Record-quality GaAs two-dimensional hole systems|Yoon Jang Chung,C. Wang,S. K. Singh,A. Gupta,K. W. Baldwin,K. W. West,R. Winkler,M. Shayegan,L. N. Pfeiffer###
(814475, 814476)
Record-quality GaAs two-dimensional hole systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 2, 'D', 2],[182.0, 2, ',', 2]

GaAs
###Record-quality GaAs two-dimensional hole systems|Yoon Jang Chung,C. Wang,S. K. Singh,A. Gupta,K. W. Baldwin,K. W. West,R. Winkler,M. Shayegan,L. N. Pfeiffer###
(814537, 814538)
 The complex band structure, large spin-orbit induced band splitting, andheavy effective mass of two-dimensional (2D) hole systems hosted in GaAsquantum wells render them rich platforms to study many-body physics andballistic transport phenomena.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 2, 'D', 1],[120.0, 2, ',', 1]

GaAs
###Record-quality GaAs two-dimensional hole systems|Yoon Jang Chung,C. Wang,S. K. Singh,A. Gupta,K. W. Baldwin,K. W. West,R. Winkler,M. Shayegan,L. N. Pfeiffer###
(814589, 814590)
 Here we report ultra-high-quality (001) GaAs 2Dhole systems, fabricated using molecular beam epitaxy and modulation doping,with mobility values as high as 5.8times106 cm2/Vs at a hole density ofp<missing VAR>1.3times1011 /cm2, implying a mean-free path of simeq27 mum<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[1.0, 2, 'D', 0],[68.0, 2, ',', 0]

In
###Record-quality GaAs two-dimensional hole systems|Yoon Jang Chung,C. Wang,S. K. Singh,A. Gupta,K. W. Baldwin,K. W. West,R. Winkler,M. Shayegan,L. N. Pfeiffer###
(814681, 814681)
In the low-temperature magnetoresistance trace of this sample, we observehigh-order fractional quantum Hall states up to the Landau level fillingnu12/25 near nu1/2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 2, 'D', 1],[23.0, 2, ',', 1]

GaAs
###Record-quality GaAs two-dimensional hole systems|Yoon Jang Chung,C. Wang,S. K. Singh,A. Gupta,K. W. Baldwin,K. W. West,R. Winkler,M. Shayegan,L. N. Pfeiffer###
(814858, 814859)
 These improvements in sample quality were achieved by reduction ofresidual impurities both in the GaAs channel and the AlGaAs barrier material,as well as optimization in design of the sample structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[267.0, 2, 'D', 3],[200.0, 2, ',', 3]

AlGaAs
###Record-quality GaAs two-dimensional hole systems|Yoon Jang Chung,C. Wang,S. K. Singh,A. Gupta,K. W. Baldwin,K. W. West,R. Winkler,M. Shayegan,L. N. Pfeiffer###
(814867, 814869)
 These improvements in sample quality were achieved by reduction ofresidual impurities both in the GaAs channel and the AlGaAs barrier material,as well as optimization in design of the sample structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[276.0, 2, 'D', 3],[209.0, 2, ',', 3]

CrSBr
###Probing the spin dimensionality in single-layer CrSBr van der Waals heterostructures by magneto-transport measurements|Carla Boix-Constant,Samuel Mañas-Valero,Alberto M. Ruiz,Andrey Rybakov,Krzysztof Aleksander Konieczny,Sébastien Pillet,José J. Baldoví,Eugenio Coronado###
(814920, 814922)
Probing the spin dimensionality in single-layer CrSBr van der Waals heterostructures by magneto-transport measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 2, 'D', 2],[98.0, 2, 'D', 2],[260.0, 2, 'D', 5],[490.0, 2, 'D', 9]

CrI3
###Probing the spin dimensionality in single-layer CrSBr van der Waals heterostructures by magneto-transport measurements|Carla Boix-Constant,Samuel Mañas-Valero,Alberto M. Ruiz,Andrey Rybakov,Krzysztof Aleksander Konieczny,Sébastien Pillet,José J. Baldoví,Eugenio Coronado###
(814994, 814996)
 Beyondthe pioneering studies on 2D CrI3 and Cr2Ge2Te6, this emerging field hasexpanded to 2D antiferromagnets exhibiting different spin anisotropies andtextures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 2, 'D', 0],[24.0, 2, 'D', 0],[186.0, 2, 'D', 3],[416.0, 2, 'D', 7]

Cr2Ge2Te6
###Probing the spin dimensionality in single-layer CrSBr van der Waals heterostructures by magneto-transport measurements|Carla Boix-Constant,Samuel Mañas-Valero,Alberto M. Ruiz,Andrey Rybakov,Krzysztof Aleksander Konieczny,Sébastien Pillet,José J. Baldoví,Eugenio Coronado###
(815000, 815005)
 Beyondthe pioneering studies on 2D CrI3 and Cr2Ge2Te6, this emerging field hasexpanded to 2D antiferromagnets exhibiting different spin anisotropies andtextures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 2, 'D', 0],[15.0, 2, 'D', 0],[177.0, 2, 'D', 3],[407.0, 2, 'D', 7]

CrSBr
###Probing the spin dimensionality in single-layer CrSBr van der Waals heterostructures by magneto-transport measurements|Carla Boix-Constant,Samuel Mañas-Valero,Alberto M. Ruiz,Andrey Rybakov,Krzysztof Aleksander Konieczny,Sébastien Pillet,José J. Baldoví,Eugenio Coronado###
(815052, 815054)
 Of particular interest is the layered metamagnet CrSBr, a relativelyair-stable semiconductor formed by antiferromagnetically-coupled ferromagneticlayers (Tc150 K) that can be exfoliated down to the single-layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 2, 'D', 1],[32.0, 2, 'D', 1],[128.0, 2, 'D', 2],[358.0, 2, 'D', 6]

Tc150
###Probing the spin dimensionality in single-layer CrSBr van der Waals heterostructures by magneto-transport measurements|Carla Boix-Constant,Samuel Mañas-Valero,Alberto M. Ruiz,Andrey Rybakov,Krzysztof Aleksander Konieczny,Sébastien Pillet,José J. Baldoví,Eugenio Coronado###
(815082, 815083)
 Of particular interest is the layered metamagnet CrSBr, a relativelyair-stable semiconductor formed by antiferromagnetically-coupled ferromagneticlayers (Tc150 K) that can be exfoliated down to the single-layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 2, 'D', 1],[62.0, 2, 'D', 1],[99.0, 2, 'D', 2],[329.0, 2, 'D', 6]

K
###Probing the spin dimensionality in single-layer CrSBr van der Waals heterostructures by magneto-transport measurements|Carla Boix-Constant,Samuel Mañas-Valero,Alberto M. Ruiz,Andrey Rybakov,Krzysztof Aleksander Konieczny,Sébastien Pillet,José J. Baldoví,Eugenio Coronado###
(815085, 815085)
 Of particular interest is the layered metamagnet CrSBr, a relativelyair-stable semiconductor formed by antiferromagnetically-coupled ferromagneticlayers (Tc150 K) that can be exfoliated down to the single-layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 2, 'D', 1],[65.0, 2, 'D', 1],[97.0, 2, 'D', 2],[327.0, 2, 'D', 6]

K
###Probing the spin dimensionality in single-layer CrSBr van der Waals heterostructures by magneto-transport measurements|Carla Boix-Constant,Samuel Mañas-Valero,Alberto M. Ruiz,Andrey Rybakov,Krzysztof Aleksander Konieczny,Sébastien Pillet,José J. Baldoví,Eugenio Coronado###
(815150, 815150)
 It presentsa complex magnetic behavior with a dynamic magnetic crossover leading to alow-temperature hidden order below T<missing VAR>40 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 2, 'D', 2],[130.0, 2, 'D', 2],[32.0, 2, 'D', 1],[262.0, 2, 'D', 5]

CrSBr
###Probing the spin dimensionality in single-layer CrSBr van der Waals heterostructures by magneto-transport measurements|Carla Boix-Constant,Samuel Mañas-Valero,Alberto M. Ruiz,Andrey Rybakov,Krzysztof Aleksander Konieczny,Sébastien Pillet,José J. Baldoví,Eugenio Coronado###
(815171, 815173)
 Here, we inspect themagneto-transport properties of CrSBr vertical heterostructures in the 2Dlimit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 2, 'D', 3],[151.0, 2, 'D', 3],[9.0, 2, 'D', 0],[239.0, 2, 'D', 4]

Tc
###Probing the spin dimensionality in single-layer CrSBr van der Waals heterostructures by magneto-transport measurements|Carla Boix-Constant,Samuel Mañas-Valero,Alberto M. Ruiz,Andrey Rybakov,Krzysztof Aleksander Konieczny,Sébastien Pillet,José J. Baldoví,Eugenio Coronado###
(815224, 815224)
 Our results demonstrate the marked low-dimensional character of theferromagnetic monolayer, with short-range correlations above Tc and anIsing-type in-plane anisotropy, being the spins spontaneously aligned along theeasy-axis b<missing VAR> below Tc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[232.0, 2, 'D', 4],[204.0, 2, 'D', 4],[42.0, 2, 'D', 1],[188.0, 2, 'D', 3]

Tc
###Probing the spin dimensionality in single-layer CrSBr van der Waals heterostructures by magneto-transport measurements|Carla Boix-Constant,Samuel Mañas-Valero,Alberto M. Ruiz,Andrey Rybakov,Krzysztof Aleksander Konieczny,Sébastien Pillet,José J. Baldoví,Eugenio Coronado###
(815265, 815265)
 Our results demonstrate the marked low-dimensional character of theferromagnetic monolayer, with short-range correlations above Tc and anIsing-type in-plane anisotropy, being the spins spontaneously aligned along theeasy-axis b<missing VAR> below Tc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[273.0, 2, 'D', 4],[245.0, 2, 'D', 4],[83.0, 2, 'D', 1],[147.0, 2, 'D', 3]

In
###Probing the spin dimensionality in single-layer CrSBr van der Waals heterostructures by magneto-transport measurements|Carla Boix-Constant,Samuel Mañas-Valero,Alberto M. Ruiz,Andrey Rybakov,Krzysztof Aleksander Konieczny,Sébastien Pillet,José J. Baldoví,Eugenio Coronado###
(815315, 815315)
 In multilayers, a spin-valve behavior is observed, with negativemagnetoresistance strongly enhanced along the three directions below T<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[323.0, 2, 'D', 6],[295.0, 2, 'D', 6],[133.0, 2, 'D', 3],[97.0, 2, 'D', 1]

CrSBr
###Probing the spin dimensionality in single-layer CrSBr van der Waals heterostructures by magneto-transport measurements|Carla Boix-Constant,Samuel Mañas-Valero,Alberto M. Ruiz,Andrey Rybakov,Krzysztof Aleksander Konieczny,Sébastien Pillet,José J. Baldoví,Eugenio Coronado###
(815366, 815368)
 Theseresults show that CrSBr monolayer/bilayer provides an ideal platform forstudying and controlling field-induced phenomena in two-dimensions, offeringnew insights regarding 2D magnets and their integration into verticalspintronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[374.0, 2, 'D', 7],[346.0, 2, 'D', 7],[184.0, 2, 'D', 4],[44.0, 2, 'D', 0]

Sn4Au
###Probing the topological surface states in superconducting Sn4Au single crystal: A magneto transport study|M. M. Sharma,Poonam Rani,V. P. S. Awana###
(815454, 815456)
Probing the topological surface states in superconducting Sn4Au single crystal A magneto transport study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[290.0, 2, 'K', 7],[349.0, 3, 'K', 10],[351.0, 5, 'K', 10],[353.0, 10, 'K', 10],[356.0, 20, 'K', 10],[530.0, 2.6, 'K', 14]

In
###Probing the topological surface states in superconducting Sn4Au single crystal: A magneto transport study|M. M. Sharma,Poonam Rani,V. P. S. Awana###
(815517, 815517)
 In this article, we report a flux free method to synthesizesingle crystal of topological superconductor candidate Sn4Au.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[229.0, 2, 'K', 5],[288.0, 3, 'K', 8],[290.0, 5, 'K', 8],[292.0, 10, 'K', 8],[295.0, 20, 'K', 8],[469.0, 2.6, 'K', 12]

Sn4Au
###Probing the topological surface states in superconducting Sn4Au single crystal: A magneto transport study|M. M. Sharma,Poonam Rani,V. P. S. Awana###
(815553, 815555)
 In this article, we report a flux free method to synthesizesingle crystal of topological superconductor candidate Sn4Au.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[191.0, 2, 'K', 5],[250.0, 3, 'K', 8],[252.0, 5, 'K', 8],[254.0, 10, 'K', 8],[257.0, 20, 'K', 8],[431.0, 2.6, 'K', 12]

F
###Probing the topological surface states in superconducting Sn4Au single crystal: A magneto transport study|M. M. Sharma,Poonam Rani,V. P. S. Awana###
(815612, 815612)
 X<missing VAR>-Ray diffraction (XRD), field emission scanning electron microscopy(FESEM), selected Area electron diffraction (SAED), and transmission electronmicroscopy (TEM).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 2, 'K', 3],[193.0, 3, 'K', 6],[195.0, 5, 'K', 6],[197.0, 10, 'K', 6],[200.0, 20, 'K', 6],[374.0, 2.6, 'K', 10]

S
###Probing the topological surface states in superconducting Sn4Au single crystal: A magneto transport study|M. M. Sharma,Poonam Rani,V. P. S. Awana###
(815629, 815629)
 X<missing VAR>-Ray diffraction (XRD), field emission scanning electron microscopy(FESEM), selected Area electron diffraction (SAED), and transmission electronmicroscopy (TEM).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 2, 'K', 3],[176.0, 3, 'K', 6],[178.0, 5, 'K', 6],[180.0, 10, 'K', 6],[183.0, 20, 'K', 6],[357.0, 2.6, 'K', 10]

Sn
###Probing the topological surface states in superconducting Sn4Au single crystal: A magneto transport study|M. M. Sharma,Poonam Rani,V. P. S. Awana###
(815667, 815667)
 Sn and Au areanalyzed through X<missing VAR>-Ray photoelectron spectroscopy (X<missing VAR>PS).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 2, 'K', 1],[138.0, 3, 'K', 4],[140.0, 5, 'K', 4],[142.0, 10, 'K', 4],[145.0, 20, 'K', 4],[319.0, 2.6, 'K', 8]

Au
###Probing the topological surface states in superconducting Sn4Au single crystal: A magneto transport study|M. M. Sharma,Poonam Rani,V. P. S. Awana###
(815671, 815671)
 Sn and Au areanalyzed through X<missing VAR>-Ray photoelectron spectroscopy (X<missing VAR>PS).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 2, 'K', 1],[134.0, 3, 'K', 4],[136.0, 5, 'K', 4],[138.0, 10, 'K', 4],[141.0, 20, 'K', 4],[315.0, 2.6, 'K', 8]

S
###Probing the topological surface states in superconducting Sn4Au single crystal: A magneto transport study|M. M. Sharma,Poonam Rani,V. P. S. Awana###
(815691, 815691)
 Sn and Au areanalyzed through X<missing VAR>-Ray photoelectron spectroscopy (X<missing VAR>PS).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 2, 'K', 1],[114.0, 3, 'K', 4],[116.0, 5, 'K', 4],[118.0, 10, 'K', 4],[121.0, 20, 'K', 4],[295.0, 2.6, 'K', 8]

Sn4Au
###Probing the topological surface states in superconducting Sn4Au single crystal: A magneto transport study|M. M. Sharma,Poonam Rani,V. P. S. Awana###
(815702, 815704)
 Superconductivity insynthesized Sn4Au single crystal is evident form R-T plot and critical field(Hc) is determined through R<missing VAR>-H plot at 2K i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 2, 'K', 0],[101.0, 3, 'K', 3],[103.0, 5, 'K', 3],[105.0, 10, 'K', 3],[108.0, 20, 'K', 3],[282.0, 2.6, 'K', 7]

H
###Probing the topological surface states in superconducting Sn4Au single crystal: A magneto transport study|M. M. Sharma,Poonam Rani,V. P. S. Awana###
(815741, 815741)
 Superconductivity insynthesized Sn4Au single crystal is evident form R-T plot and critical field(Hc) is determined through R<missing VAR>-H plot at 2K i.e.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 2, 'K', 0],[64.0, 3, 'K', 3],[66.0, 5, 'K', 3],[68.0, 10, 'K', 3],[71.0, 20, 'K', 3],[245.0, 2.6, 'K', 7]

Tc
###Probing the topological surface states in superconducting Sn4Au single crystal: A magneto transport study|M. M. Sharma,Poonam Rani,V. P. S. Awana###
(815763, 815763)
, just below critical temperatureTc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 2, 'K', 1],[42.0, 3, 'K', 2],[44.0, 5, 'K', 2],[46.0, 10, 'K', 2],[49.0, 20, 'K', 2],[223.0, 2.6, 'K', 6]

H
###Probing the topological surface states in superconducting Sn4Au single crystal: A magneto transport study|M. M. Sharma,Poonam Rani,V. P. S. Awana###
(815785, 815785)
 A positive magnetoresistance (MR) is observed in R<missing VAR>-H measurements atdifferent temperatures above Tc, viz.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 2, 'K', 2],[20.0, 3, 'K', 1],[22.0, 5, 'K', 1],[24.0, 10, 'K', 1],[27.0, 20, 'K', 1],[201.0, 2.6, 'K', 5]

Tc
###Probing the topological surface states in superconducting Sn4Au single crystal: A magneto transport study|M. M. Sharma,Poonam Rani,V. P. S. Awana###
(815798, 815798)
 A positive magnetoresistance (MR) is observed in R<missing VAR>-H measurements atdifferent temperatures above Tc, viz.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 2, 'K', 2],[7.0, 3, 'K', 1],[9.0, 5, 'K', 1],[11.0, 10, 'K', 1],[14.0, 20, 'K', 1],[188.0, 2.6, 'K', 5]

C
###Probing the topological surface states in superconducting Sn4Au single crystal: A magneto transport study|M. M. Sharma,Poonam Rani,V. P. S. Awana###
(815825, 815825)
 Further, themagnetoconductivity (M<missing VAR>C) is analyzed by using Hikami-Larkin-Nagaoka (HL<missing VAR>N)formalism, which signifies the presence of weak antilocalization (WAL) effectin Sn4Au.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 2, 'K', 4],[20.0, 3, 'K', 1],[18.0, 5, 'K', 1],[16.0, 10, 'K', 1],[13.0, 20, 'K', 1],[161.0, 2.6, 'K', 3]

H
###Probing the topological surface states in superconducting Sn4Au single crystal: A magneto transport study|M. M. Sharma,Poonam Rani,V. P. S. Awana###
(815843, 815843)
 Further, themagnetoconductivity (M<missing VAR>C) is analyzed by using Hikami-Larkin-Nagaoka (HL<missing VAR>N)formalism, which signifies the presence of weak antilocalization (WAL) effectin Sn4Au.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 2, 'K', 4],[38.0, 3, 'K', 1],[36.0, 5, 'K', 1],[34.0, 10, 'K', 1],[31.0, 20, 'K', 1],[143.0, 2.6, 'K', 3]

N
###Probing the topological surface states in superconducting Sn4Au single crystal: A magneto transport study|M. M. Sharma,Poonam Rani,V. P. S. Awana###
(815845, 815845)
 Further, themagnetoconductivity (M<missing VAR>C) is analyzed by using Hikami-Larkin-Nagaoka (HL<missing VAR>N)formalism, which signifies the presence of weak antilocalization (WAL) effectin Sn4Au.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 2, 'K', 4],[40.0, 3, 'K', 1],[38.0, 5, 'K', 1],[36.0, 10, 'K', 1],[33.0, 20, 'K', 1],[141.0, 2.6, 'K', 3]

W
###Probing the topological surface states in superconducting Sn4Au single crystal: A magneto transport study|M. M. Sharma,Poonam Rani,V. P. S. Awana###
(815867, 815867)
 Further, themagnetoconductivity (M<missing VAR>C) is analyzed by using Hikami-Larkin-Nagaoka (HL<missing VAR>N)formalism, which signifies the presence of weak antilocalization (WAL) effectin Sn4Au.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 2, 'K', 4],[62.0, 3, 'K', 1],[60.0, 5, 'K', 1],[58.0, 10, 'K', 1],[55.0, 20, 'K', 1],[119.0, 2.6, 'K', 3]

Sn4Au
###Probing the topological surface states in superconducting Sn4Au single crystal: A magneto transport study|M. M. Sharma,Poonam Rani,V. P. S. Awana###
(815877, 815879)
 Further, themagnetoconductivity (M<missing VAR>C) is analyzed by using Hikami-Larkin-Nagaoka (HL<missing VAR>N)formalism, which signifies the presence of weak antilocalization (WAL) effectin Sn4Au.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 2, 'K', 4],[72.0, 3, 'K', 1],[70.0, 5, 'K', 1],[68.0, 10, 'K', 1],[65.0, 20, 'K', 1],[107.0, 2.6, 'K', 3]

W
###Probing the topological surface states in superconducting Sn4Au single crystal: A magneto transport study|M. M. Sharma,Poonam Rani,V. P. S. Awana###
(815913, 815913)
 Angle dependent magneto-transport measurement has been performed todetect the origin of the observed WAL<missing VAR> effect in Sn4Au single crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 2, 'K', 5],[108.0, 3, 'K', 2],[106.0, 5, 'K', 2],[104.0, 10, 'K', 2],[101.0, 20, 'K', 2],[73.0, 2.6, 'K', 2]

Sn4Au
###Probing the topological surface states in superconducting Sn4Au single crystal: A magneto transport study|M. M. Sharma,Poonam Rani,V. P. S. Awana###
(815921, 815923)
 Angle dependent magneto-transport measurement has been performed todetect the origin of the observed WAL<missing VAR> effect in Sn4Au single crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 2, 'K', 5],[116.0, 3, 'K', 2],[114.0, 5, 'K', 2],[112.0, 10, 'K', 2],[109.0, 20, 'K', 2],[63.0, 2.6, 'K', 2]

C
###Probing the topological surface states in superconducting Sn4Au single crystal: A magneto transport study|M. M. Sharma,Poonam Rani,V. P. S. Awana###
(815934, 815934)
Normalized M<missing VAR>C vs HcosTheta plot shows presence of topological surface states(T<missing VAR>SS) in the studied system.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 2, 'K', 6],[129.0, 3, 'K', 3],[127.0, 5, 'K', 3],[125.0, 10, 'K', 3],[122.0, 20, 'K', 3],[52.0, 2.6, 'K', 1]

S
###Probing the topological surface states in superconducting Sn4Au single crystal: A magneto transport study|M. M. Sharma,Poonam Rani,V. P. S. Awana###
(815959, 815959)
Normalized M<missing VAR>C vs HcosTheta plot shows presence of topological surface states(T<missing VAR>SS) in the studied system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[213.0, 2, 'K', 6],[154.0, 3, 'K', 3],[152.0, 5, 'K', 3],[150.0, 10, 'K', 3],[147.0, 20, 'K', 3],[27.0, 2.6, 'K', 1]

Sn4Au
###Probing the topological surface states in superconducting Sn4Au single crystal: A magneto transport study|M. M. Sharma,Poonam Rani,V. P. S. Awana###
(815979, 815981)
 It is evident that Sn4Au is a 2.6K topologicalsuperconductor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[233.0, 2, 'K', 7],[174.0, 3, 'K', 4],[172.0, 5, 'K', 4],[170.0, 10, 'K', 4],[167.0, 20, 'K', 4],[5.0, 2.6, 'K', 0]

In
###Geometrical magnetoresistance effect and mobility in graphene field-effect transistors|Isabel Harrysson Rodrigues,Andrey Generalov,Anamul Md Hoque,Miika Soikkeli,Anton Murros,Sanna Arpiainen,Andrei Vorobiev###
(816256, 816256)
 In higher fields, the physicalmagnetoresistance effect starts to contribute.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 0.55, 'T', 1]

In
###Geometrical magnetoresistance effect and mobility in graphene field-effect transistors|Isabel Harrysson Rodrigues,Andrey Generalov,Anamul Md Hoque,Miika Soikkeli,Anton Murros,Sanna Arpiainen,Andrei Vorobiev###
(816347, 816347)
 In particular, the range of the fairly constant mobilityis associated with the dominating Coulomb scattering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 0.55, 'T', 4]

U
###Large anomalous unidirectional magnetoresistance in a single ferromagnetic layer|Kaihua Lou,Qianwen Zhao,Baiqing Jiang,Chong Bi###
(816532, 816532)
 Unidirectional magnetoresistance (UMR) in a ferromagnetic bilayer due to thespin Hall effects (SHEs) provides a facile means of probing in-planemagnetization to avoid complex magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[213.0, 10, 'times', 2]

(SHEs)
###Large anomalous unidirectional magnetoresistance in a single ferromagnetic layer|Kaihua Lou,Qianwen Zhao,Baiqing Jiang,Chong Bi###
(816558, 816562)
 Unidirectional magnetoresistance (UMR) in a ferromagnetic bilayer due to thespin Hall effects (SHEs) provides a facile means of probing in-planemagnetization to avoid complex magnetic tunnel junctions.
Featurization successful!
0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0
[183.0, 10, 'times', 2]

U
###Large anomalous unidirectional magnetoresistance in a single ferromagnetic layer|Kaihua Lou,Qianwen Zhao,Baiqing Jiang,Chong Bi###
(816601, 816601)
 However, the UMRsignal is very weak and usually requires a lock-in amplifier for detection evenin the bilayer involving Ta or Pt with a large spin Hall angle (SHA).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 10, 'times', 1]

Ta
###Large anomalous unidirectional magnetoresistance in a single ferromagnetic layer|Kaihua Lou,Qianwen Zhao,Baiqing Jiang,Chong Bi###
(816643, 816643)
 However, the UMRsignal is very weak and usually requires a lock-in amplifier for detection evenin the bilayer involving Ta or Pt with a large spin Hall angle (SHA).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 10, 'times', 1]

Pt
###Large anomalous unidirectional magnetoresistance in a single ferromagnetic layer|Kaihua Lou,Qianwen Zhao,Baiqing Jiang,Chong Bi###
(816647, 816647)
 However, the UMRsignal is very weak and usually requires a lock-in amplifier for detection evenin the bilayer involving Ta or Pt with a large spin Hall angle (SHA).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 10, 'times', 1]

SH
###Large anomalous unidirectional magnetoresistance in a single ferromagnetic layer|Kaihua Lou,Qianwen Zhao,Baiqing Jiang,Chong Bi###
(816662, 816663)
 However, the UMRsignal is very weak and usually requires a lock-in amplifier for detection evenin the bilayer involving Ta or Pt with a large spin Hall angle (SHA).
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 10, 'times', 1]

U
###Large anomalous unidirectional magnetoresistance in a single ferromagnetic layer|Kaihua Lou,Qianwen Zhao,Baiqing Jiang,Chong Bi###
(816681, 816681)
 Here wereport a type of UMR, termed as the anomalous UMR (AUMR), in a single CoFeBlayer without any adjacent SHE<missing VAR> layers, where the UMR signal is about 10 timeslarger than that in Ta/CoFeB structures and can be detected by usingconventional dc multimeters in the absence of lock-in amplifiers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 10, 'times', 0]

U
###Large anomalous unidirectional magnetoresistance in a single ferromagnetic layer|Kaihua Lou,Qianwen Zhao,Baiqing Jiang,Chong Bi###
(816694, 816694)
 Here wereport a type of UMR, termed as the anomalous UMR (AUMR), in a single CoFeBlayer without any adjacent SHE<missing VAR> layers, where the UMR signal is about 10 timeslarger than that in Ta/CoFeB structures and can be detected by usingconventional dc multimeters in the absence of lock-in amplifiers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 10, 'times', 0]

U
###Large anomalous unidirectional magnetoresistance in a single ferromagnetic layer|Kaihua Lou,Qianwen Zhao,Baiqing Jiang,Chong Bi###
(816700, 816700)
 Here wereport a type of UMR, termed as the anomalous UMR (AUMR), in a single CoFeBlayer without any adjacent SHE<missing VAR> layers, where the UMR signal is about 10 timeslarger than that in Ta/CoFeB structures and can be detected by usingconventional dc multimeters in the absence of lock-in amplifiers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 10, 'times', 0]

CoFeB
###Large anomalous unidirectional magnetoresistance in a single ferromagnetic layer|Kaihua Lou,Qianwen Zhao,Baiqing Jiang,Chong Bi###
(816712, 816714)
 Here wereport a type of UMR, termed as the anomalous UMR (AUMR), in a single CoFeBlayer without any adjacent SHE<missing VAR> layers, where the UMR signal is about 10 timeslarger than that in Ta/CoFeB structures and can be detected by usingconventional dc multimeters in the absence of lock-in amplifiers.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 10, 'times', 0]

SH
###Large anomalous unidirectional magnetoresistance in a single ferromagnetic layer|Kaihua Lou,Qianwen Zhao,Baiqing Jiang,Chong Bi###
(816725, 816726)
 Here wereport a type of UMR, termed as the anomalous UMR (AUMR), in a single CoFeBlayer without any adjacent SHE<missing VAR> layers, where the UMR signal is about 10 timeslarger than that in Ta/CoFeB structures and can be detected by usingconventional dc multimeters in the absence of lock-in amplifiers.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 10, 'times', 0]

U
###Large anomalous unidirectional magnetoresistance in a single ferromagnetic layer|Kaihua Lou,Qianwen Zhao,Baiqing Jiang,Chong Bi###
(816736, 816736)
 Here wereport a type of UMR, termed as the anomalous UMR (AUMR), in a single CoFeBlayer without any adjacent SHE<missing VAR> layers, where the UMR signal is about 10 timeslarger than that in Ta/CoFeB structures and can be detected by usingconventional dc multimeters in the absence of lock-in amplifiers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 10, 'times', 0]

Ta/CoFeB
###Large anomalous unidirectional magnetoresistance in a single ferromagnetic layer|Kaihua Lou,Qianwen Zhao,Baiqing Jiang,Chong Bi###
(816756, 816760)
 Here wereport a type of UMR, termed as the anomalous UMR (AUMR), in a single CoFeBlayer without any adjacent SHE<missing VAR> layers, where the UMR signal is about 10 timeslarger than that in Ta/CoFeB structures and can be detected by usingconventional dc multimeters in the absence of lock-in amplifiers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[11.0, 10, 'times', 0]

U
###Large anomalous unidirectional magnetoresistance in a single ferromagnetic layer|Kaihua Lou,Qianwen Zhao,Baiqing Jiang,Chong Bi###
(816812, 816812)
 We furtherdemonstrate that the extracted AUMR by excluding thermal contributions showsreversal signs for the CoFeB and NiFe single layers with opposite SHAs,indicating that the AUMR may originate from the self-generated spinaccumulation interacting with magnetization through the giantmagnetoresistance-like mechanism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 10, 'times', 1]

CoFeB
###Large anomalous unidirectional magnetoresistance in a single ferromagnetic layer|Kaihua Lou,Qianwen Zhao,Baiqing Jiang,Chong Bi###
(816835, 816837)
 We furtherdemonstrate that the extracted AUMR by excluding thermal contributions showsreversal signs for the CoFeB and NiFe single layers with opposite SHAs,indicating that the AUMR may originate from the self-generated spinaccumulation interacting with magnetization through the giantmagnetoresistance-like mechanism.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 10, 'times', 1]

NiFe
###Large anomalous unidirectional magnetoresistance in a single ferromagnetic layer|Kaihua Lou,Qianwen Zhao,Baiqing Jiang,Chong Bi###
(816841, 816842)
 We furtherdemonstrate that the extracted AUMR by excluding thermal contributions showsreversal signs for the CoFeB and NiFe single layers with opposite SHAs,indicating that the AUMR may originate from the self-generated spinaccumulation interacting with magnetization through the giantmagnetoresistance-like mechanism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 10, 'times', 1]

SHAs
###Large anomalous unidirectional magnetoresistance in a single ferromagnetic layer|Kaihua Lou,Qianwen Zhao,Baiqing Jiang,Chong Bi###
(816852, 816854)
 We furtherdemonstrate that the extracted AUMR by excluding thermal contributions showsreversal signs for the CoFeB and NiFe single layers with opposite SHAs,indicating that the AUMR may originate from the self-generated spinaccumulation interacting with magnetization through the giantmagnetoresistance-like mechanism.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 10, 'times', 1]

U
###Large anomalous unidirectional magnetoresistance in a single ferromagnetic layer|Kaihua Lou,Qianwen Zhao,Baiqing Jiang,Chong Bi###
(816865, 816865)
 We furtherdemonstrate that the extracted AUMR by excluding thermal contributions showsreversal signs for the CoFeB and NiFe single layers with opposite SHAs,indicating that the AUMR may originate from the self-generated spinaccumulation interacting with magnetization through the giantmagnetoresistance-like mechanism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 10, 'times', 1]

U
###Large anomalous unidirectional magnetoresistance in a single ferromagnetic layer|Kaihua Lou,Qianwen Zhao,Baiqing Jiang,Chong Bi###
(816917, 816917)
 These results suggest that the AUMRcontributes UMR signals larger than the interfacial spin Hall UMR in theCoFeB-involved systems, providing a convenient and reliable approach to detectin-plane magnetization for the two-terminal spintronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[172.0, 10, 'times', 2]

U
###Large anomalous unidirectional magnetoresistance in a single ferromagnetic layer|Kaihua Lou,Qianwen Zhao,Baiqing Jiang,Chong Bi###
(816924, 816924)
 These results suggest that the AUMRcontributes UMR signals larger than the interfacial spin Hall UMR in theCoFeB-involved systems, providing a convenient and reliable approach to detectin-plane magnetization for the two-terminal spintronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 10, 'times', 2]

U
###Large anomalous unidirectional magnetoresistance in a single ferromagnetic layer|Kaihua Lou,Qianwen Zhao,Baiqing Jiang,Chong Bi###
(816942, 816942)
 These results suggest that the AUMRcontributes UMR signals larger than the interfacial spin Hall UMR in theCoFeB-involved systems, providing a convenient and reliable approach to detectin-plane magnetization for the two-terminal spintronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[197.0, 10, 'times', 2]

CoFeB
###Large anomalous unidirectional magnetoresistance in a single ferromagnetic layer|Kaihua Lou,Qianwen Zhao,Baiqing Jiang,Chong Bi###
(816951, 816953)
 These results suggest that the AUMRcontributes UMR signals larger than the interfacial spin Hall UMR in theCoFeB-involved systems, providing a convenient and reliable approach to detectin-plane magnetization for the two-terminal spintronic devices.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[206.0, 10, 'times', 2]

V
###Ultra-High Carrier Mobilities in Ferroelectric Domain Wall Corbino Cones at Room Temperature|Conor J. McCluskey,Matthew G. Colbear,James P. V. McConville,Shane J. McCartan,Jesi R. Maguire,Michele Conroy,Kalani Moore,Alan Harvey,Felix Trier,Ursel Bangert,Alexei Gruverman,Manuel Bibes,Amit Kumar,Raymond G. P. McQuaid,J. Marty Gregg###
(817499, 817499)
 Our data imply carriers at the domain walls withextremely high room temperature Hall mobilities of up to  3,700cm2V-1s<missing VAR>-1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[293.0, 180, 'o', 2],[5.0, 3, ',', 0]

Co3Sn2S2
###Enhancement of Spin-Charge Conversion Efficiency for Co$_{3}$Sn$_{2}$S$_{2}$ across Transition from Paramagnetic to Ferromagnetic Phase|Takeshi Seki,Yong-Chang Lau,Junya Ikeda,Kohei Fujiwara,Akihiro Ozawa,Satoshi Iihama,Kentaro Nomura,Atsushi Tsukazaki###
(817599, 817604)
Enhancement of Spin-Charge Conversion Efficiency for Co3Sn2S2 across Transition from Paramagnetic to Ferromagnetic Phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[187.0, 170, 'K', 3]

Co3Sn2S2
###Enhancement of Spin-Charge Conversion Efficiency for Co$_{3}$Sn$_{2}$S$_{2}$ across Transition from Paramagnetic to Ferromagnetic Phase|Takeshi Seki,Yong-Chang Lau,Junya Ikeda,Kohei Fujiwara,Akihiro Ozawa,Satoshi Iihama,Kentaro Nomura,Atsushi Tsukazaki###
(817621, 817626)
 Co3Sn2S2 (CSS) is one of the shandite compounds and becomes amagnetic Weyl semimetal candidate below the ferromagnetic phase transitiontemperature (textitT<missing VAR>textrmC).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 170, 'K', 2]

(CSS)
###Enhancement of Spin-Charge Conversion Efficiency for Co$_{3}$Sn$_{2}$S$_{2}$ across Transition from Paramagnetic to Ferromagnetic Phase|Takeshi Seki,Yong-Chang Lau,Junya Ikeda,Kohei Fujiwara,Akihiro Ozawa,Satoshi Iihama,Kentaro Nomura,Atsushi Tsukazaki###
(817628, 817632)
 Co3Sn2S2 (CSS) is one of the shandite compounds and becomes amagnetic Weyl semimetal candidate below the ferromagnetic phase transitiontemperature (textitT<missing VAR>textrmC).
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[159.0, 170, 'K', 2]

C
###Enhancement of Spin-Charge Conversion Efficiency for Co$_{3}$Sn$_{2}$S$_{2}$ across Transition from Paramagnetic to Ferromagnetic Phase|Takeshi Seki,Yong-Chang Lau,Junya Ikeda,Kohei Fujiwara,Akihiro Ozawa,Satoshi Iihama,Kentaro Nomura,Atsushi Tsukazaki###
(817678, 817678)
 Co3Sn2S2 (CSS) is one of the shandite compounds and becomes amagnetic Weyl semimetal candidate below the ferromagnetic phase transitiontemperature (textitT<missing VAR>textrmC).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 170, 'K', 2]

In
###Enhancement of Spin-Charge Conversion Efficiency for Co$_{3}$Sn$_{2}$S$_{2}$ across Transition from Paramagnetic to Ferromagnetic Phase|Takeshi Seki,Yong-Chang Lau,Junya Ikeda,Kohei Fujiwara,Akihiro Ozawa,Satoshi Iihama,Kentaro Nomura,Atsushi Tsukazaki###
(817682, 817682)
 In this paper, we investigate thetemperature (textitT) dependence of conversion between charge current andspin current for the CSS thin film by measuring the spin-torque ferromagneticresonance (ST<missing VAR>-FMR) for the trilayer consisting of CSS / Cu / CoFeB.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 170, 'K', 1]

CSS
###Enhancement of Spin-Charge Conversion Efficiency for Co$_{3}$Sn$_{2}$S$_{2}$ across Transition from Paramagnetic to Ferromagnetic Phase|Takeshi Seki,Yong-Chang Lau,Junya Ikeda,Kohei Fujiwara,Akihiro Ozawa,Satoshi Iihama,Kentaro Nomura,Atsushi Tsukazaki###
(817726, 817728)
 In this paper, we investigate thetemperature (textitT) dependence of conversion between charge current andspin current for the CSS thin film by measuring the spin-torque ferromagneticresonance (ST<missing VAR>-FMR) for the trilayer consisting of CSS / Cu / CoFeB.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 170, 'K', 1]

S
###Enhancement of Spin-Charge Conversion Efficiency for Co$_{3}$Sn$_{2}$S$_{2}$ across Transition from Paramagnetic to Ferromagnetic Phase|Takeshi Seki,Yong-Chang Lau,Junya Ikeda,Kohei Fujiwara,Akihiro Ozawa,Satoshi Iihama,Kentaro Nomura,Atsushi Tsukazaki###
(817750, 817750)
 In this paper, we investigate thetemperature (textitT) dependence of conversion between charge current andspin current for the CSS thin film by measuring the spin-torque ferromagneticresonance (ST<missing VAR>-FMR) for the trilayer consisting of CSS / Cu / CoFeB.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 170, 'K', 1]

F
###Enhancement of Spin-Charge Conversion Efficiency for Co$_{3}$Sn$_{2}$S$_{2}$ across Transition from Paramagnetic to Ferromagnetic Phase|Takeshi Seki,Yong-Chang Lau,Junya Ikeda,Kohei Fujiwara,Akihiro Ozawa,Satoshi Iihama,Kentaro Nomura,Atsushi Tsukazaki###
(817753, 817753)
 In this paper, we investigate thetemperature (textitT) dependence of conversion between charge current andspin current for the CSS thin film by measuring the spin-torque ferromagneticresonance (ST<missing VAR>-FMR) for the trilayer consisting of CSS / Cu / CoFeB.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 170, 'K', 1]

CSS
###Enhancement of Spin-Charge Conversion Efficiency for Co$_{3}$Sn$_{2}$S$_{2}$ across Transition from Paramagnetic to Ferromagnetic Phase|Takeshi Seki,Yong-Chang Lau,Junya Ikeda,Kohei Fujiwara,Akihiro Ozawa,Satoshi Iihama,Kentaro Nomura,Atsushi Tsukazaki###
(817768, 817770)
 In this paper, we investigate thetemperature (textitT) dependence of conversion between charge current andspin current for the CSS thin film by measuring the spin-torque ferromagneticresonance (ST<missing VAR>-FMR) for the trilayer consisting of CSS / Cu / CoFeB.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 170, 'K', 1]

Cu
###Enhancement of Spin-Charge Conversion Efficiency for Co$_{3}$Sn$_{2}$S$_{2}$ across Transition from Paramagnetic to Ferromagnetic Phase|Takeshi Seki,Yong-Chang Lau,Junya Ikeda,Kohei Fujiwara,Akihiro Ozawa,Satoshi Iihama,Kentaro Nomura,Atsushi Tsukazaki###
(817774, 817774)
 In this paper, we investigate thetemperature (textitT) dependence of conversion between charge current andspin current for the CSS thin film by measuring the spin-torque ferromagneticresonance (ST<missing VAR>-FMR) for the trilayer consisting of CSS / Cu / CoFeB.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 170, 'K', 1]

CoFeB
###Enhancement of Spin-Charge Conversion Efficiency for Co$_{3}$Sn$_{2}$S$_{2}$ across Transition from Paramagnetic to Ferromagnetic Phase|Takeshi Seki,Yong-Chang Lau,Junya Ikeda,Kohei Fujiwara,Akihiro Ozawa,Satoshi Iihama,Kentaro Nomura,Atsushi Tsukazaki###
(817778, 817780)
 In this paper, we investigate thetemperature (textitT) dependence of conversion between charge current andspin current for the CSS thin film by measuring the spin-torque ferromagneticresonance (ST<missing VAR>-FMR) for the trilayer consisting of CSS / Cu / CoFeB.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 170, 'K', 1]

C
###Enhancement of Spin-Charge Conversion Efficiency for Co$_{3}$Sn$_{2}$S$_{2}$ across Transition from Paramagnetic to Ferromagnetic Phase|Takeshi Seki,Yong-Chang Lau,Junya Ikeda,Kohei Fujiwara,Akihiro Ozawa,Satoshi Iihama,Kentaro Nomura,Atsushi Tsukazaki###
(817789, 817789)
 AbovetextitT<missing VAR>textrmC  170 K, the CSS / Cu / CoFeB trilayer exhibits theclear ST<missing VAR>-FMR signal coming from the spin Hall effect in the paramagnetic CSSand the anisotropic magnetoresistance (AMR) of CoFeB.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 170, 'K', 0]

CSS
###Enhancement of Spin-Charge Conversion Efficiency for Co$_{3}$Sn$_{2}$S$_{2}$ across Transition from Paramagnetic to Ferromagnetic Phase|Takeshi Seki,Yong-Chang Lau,Junya Ikeda,Kohei Fujiwara,Akihiro Ozawa,Satoshi Iihama,Kentaro Nomura,Atsushi Tsukazaki###
(817796, 817798)
 AbovetextitT<missing VAR>textrmC  170 K, the CSS / Cu / CoFeB trilayer exhibits theclear ST<missing VAR>-FMR signal coming from the spin Hall effect in the paramagnetic CSSand the anisotropic magnetoresistance (AMR) of CoFeB.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 170, 'K', 0]

Cu
###Enhancement of Spin-Charge Conversion Efficiency for Co$_{3}$Sn$_{2}$S$_{2}$ across Transition from Paramagnetic to Ferromagnetic Phase|Takeshi Seki,Yong-Chang Lau,Junya Ikeda,Kohei Fujiwara,Akihiro Ozawa,Satoshi Iihama,Kentaro Nomura,Atsushi Tsukazaki###
(817802, 817802)
 AbovetextitT<missing VAR>textrmC  170 K, the CSS / Cu / CoFeB trilayer exhibits theclear ST<missing VAR>-FMR signal coming from the spin Hall effect in the paramagnetic CSSand the anisotropic magnetoresistance (AMR) of CoFeB.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 170, 'K', 0]

CoFeB
###Enhancement of Spin-Charge Conversion Efficiency for Co$_{3}$Sn$_{2}$S$_{2}$ across Transition from Paramagnetic to Ferromagnetic Phase|Takeshi Seki,Yong-Chang Lau,Junya Ikeda,Kohei Fujiwara,Akihiro Ozawa,Satoshi Iihama,Kentaro Nomura,Atsushi Tsukazaki###
(817806, 817808)
 AbovetextitT<missing VAR>textrmC  170 K, the CSS / Cu / CoFeB trilayer exhibits theclear ST<missing VAR>-FMR signal coming from the spin Hall effect in the paramagnetic CSSand the anisotropic magnetoresistance (AMR) of CoFeB.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 170, 'K', 0]

S
###Enhancement of Spin-Charge Conversion Efficiency for Co$_{3}$Sn$_{2}$S$_{2}$ across Transition from Paramagnetic to Ferromagnetic Phase|Takeshi Seki,Yong-Chang Lau,Junya Ikeda,Kohei Fujiwara,Akihiro Ozawa,Satoshi Iihama,Kentaro Nomura,Atsushi Tsukazaki###
(817819, 817819)
 AbovetextitT<missing VAR>textrmC  170 K, the CSS / Cu / CoFeB trilayer exhibits theclear ST<missing VAR>-FMR signal coming from the spin Hall effect in the paramagnetic CSSand the anisotropic magnetoresistance (AMR) of CoFeB.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 170, 'K', 0]

F
###Enhancement of Spin-Charge Conversion Efficiency for Co$_{3}$Sn$_{2}$S$_{2}$ across Transition from Paramagnetic to Ferromagnetic Phase|Takeshi Seki,Yong-Chang Lau,Junya Ikeda,Kohei Fujiwara,Akihiro Ozawa,Satoshi Iihama,Kentaro Nomura,Atsushi Tsukazaki###
(817822, 817822)
 AbovetextitT<missing VAR>textrmC  170 K, the CSS / Cu / CoFeB trilayer exhibits theclear ST<missing VAR>-FMR signal coming from the spin Hall effect in the paramagnetic CSSand the anisotropic magnetoresistance (AMR) of CoFeB.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 170, 'K', 0]

CSS
###Enhancement of Spin-Charge Conversion Efficiency for Co$_{3}$Sn$_{2}$S$_{2}$ across Transition from Paramagnetic to Ferromagnetic Phase|Takeshi Seki,Yong-Chang Lau,Junya Ikeda,Kohei Fujiwara,Akihiro Ozawa,Satoshi Iihama,Kentaro Nomura,Atsushi Tsukazaki###
(817846, 817848)
 AbovetextitT<missing VAR>textrmC  170 K, the CSS / Cu / CoFeB trilayer exhibits theclear ST<missing VAR>-FMR signal coming from the spin Hall effect in the paramagnetic CSSand the anisotropic magnetoresistance (AMR) of CoFeB.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 170, 'K', 0]

CoFeB
###Enhancement of Spin-Charge Conversion Efficiency for Co$_{3}$Sn$_{2}$S$_{2}$ across Transition from Paramagnetic to Ferromagnetic Phase|Takeshi Seki,Yong-Chang Lau,Junya Ikeda,Kohei Fujiwara,Akihiro Ozawa,Satoshi Iihama,Kentaro Nomura,Atsushi Tsukazaki###
(817867, 817869)
 AbovetextitT<missing VAR>textrmC  170 K, the CSS / Cu / CoFeB trilayer exhibits theclear ST<missing VAR>-FMR signal coming from the spin Hall effect in the paramagnetic CSSand the anisotropic magnetoresistance (AMR) of CoFeB.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 170, 'K', 0]

C
###Enhancement of Spin-Charge Conversion Efficiency for Co$_{3}$Sn$_{2}$S$_{2}$ across Transition from Paramagnetic to Ferromagnetic Phase|Takeshi Seki,Yong-Chang Lau,Junya Ikeda,Kohei Fujiwara,Akihiro Ozawa,Satoshi Iihama,Kentaro Nomura,Atsushi Tsukazaki###
(817878, 817878)
 BelowtextitT<missing VAR>textrmC, on the other hand, it is found that the ST<missing VAR>-FMR signalinvolves the dc voltages (textitVtextrmdc) not only through the AMRbut also through the giant magnetoresistance (GMR).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 170, 'K', 1]

S
###Enhancement of Spin-Charge Conversion Efficiency for Co$_{3}$Sn$_{2}$S$_{2}$ across Transition from Paramagnetic to Ferromagnetic Phase|Takeshi Seki,Yong-Chang Lau,Junya Ikeda,Kohei Fujiwara,Akihiro Ozawa,Satoshi Iihama,Kentaro Nomura,Atsushi Tsukazaki###
(817900, 817900)
 BelowtextitT<missing VAR>textrmC, on the other hand, it is found that the ST<missing VAR>-FMR signalinvolves the dc voltages (textitVtextrmdc) not only through the AMRbut also through the giant magnetoresistance (GMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 170, 'K', 1]

F
###Enhancement of Spin-Charge Conversion Efficiency for Co$_{3}$Sn$_{2}$S$_{2}$ across Transition from Paramagnetic to Ferromagnetic Phase|Takeshi Seki,Yong-Chang Lau,Junya Ikeda,Kohei Fujiwara,Akihiro Ozawa,Satoshi Iihama,Kentaro Nomura,Atsushi Tsukazaki###
(817903, 817903)
 BelowtextitT<missing VAR>textrmC, on the other hand, it is found that the ST<missing VAR>-FMR signalinvolves the dc voltages (textitVtextrmdc) not only through the AMRbut also through the giant magnetoresistance (GMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 170, 'K', 1]

V
###Enhancement of Spin-Charge Conversion Efficiency for Co$_{3}$Sn$_{2}$S$_{2}$ across Transition from Paramagnetic to Ferromagnetic Phase|Takeshi Seki,Yong-Chang Lau,Junya Ikeda,Kohei Fujiwara,Akihiro Ozawa,Satoshi Iihama,Kentaro Nomura,Atsushi Tsukazaki###
(817920, 817920)
 BelowtextitT<missing VAR>textrmC, on the other hand, it is found that the ST<missing VAR>-FMR signalinvolves the dc voltages (textitVtextrmdc) not only through the AMRbut also through the giant magnetoresistance (GMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 170, 'K', 1]

V
###Enhancement of Spin-Charge Conversion Efficiency for Co$_{3}$Sn$_{2}$S$_{2}$ across Transition from Paramagnetic to Ferromagnetic Phase|Takeshi Seki,Yong-Chang Lau,Junya Ikeda,Kohei Fujiwara,Akihiro Ozawa,Satoshi Iihama,Kentaro Nomura,Atsushi Tsukazaki###
(818014, 818014)
 Thus, the resistancechanges coming from both AMR and GMR should be taken into account to correctlyunderstand the characteristic field angular dependence oftextitVtextrmdc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[223.0, 170, 'K', 2]

CSS
###Enhancement of Spin-Charge Conversion Efficiency for Co$_{3}$Sn$_{2}$S$_{2}$ across Transition from Paramagnetic to Ferromagnetic Phase|Takeshi Seki,Yong-Chang Lau,Junya Ikeda,Kohei Fujiwara,Akihiro Ozawa,Satoshi Iihama,Kentaro Nomura,Atsushi Tsukazaki###
(818036, 818038)
 The spin Hall torque generated from the ferromagneticCSS, which possesses the same symmetry as that for spin Hall effect, dominantlyacts on the magnetization of CoFeB.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[245.0, 170, 'K', 3]

CoFeB
###Enhancement of Spin-Charge Conversion Efficiency for Co$_{3}$Sn$_{2}$S$_{2}$ across Transition from Paramagnetic to Ferromagnetic Phase|Takeshi Seki,Yong-Chang Lau,Junya Ikeda,Kohei Fujiwara,Akihiro Ozawa,Satoshi Iihama,Kentaro Nomura,Atsushi Tsukazaki###
(818077, 818079)
 The spin Hall torque generated from the ferromagneticCSS, which possesses the same symmetry as that for spin Hall effect, dominantlyacts on the magnetization of CoFeB.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[286.0, 170, 'K', 3]

C
###Enhancement of Spin-Charge Conversion Efficiency for Co$_{3}$Sn$_{2}$S$_{2}$ across Transition from Paramagnetic to Ferromagnetic Phase|Takeshi Seki,Yong-Chang Lau,Junya Ikeda,Kohei Fujiwara,Akihiro Ozawa,Satoshi Iihama,Kentaro Nomura,Atsushi Tsukazaki###
(818120, 818120)
 A definite increase in the spin-chargeconversion efficiency (xi) is observed at textitT<missing VAR> <textitT<missing VAR>textrmC, indicating that the phase transition to theferromagnetic CSS promotes the highly efficient spin-charge conversion.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[329.0, 170, 'K', 4]

CSS
###Enhancement of Spin-Charge Conversion Efficiency for Co$_{3}$Sn$_{2}$S$_{2}$ across Transition from Paramagnetic to Ferromagnetic Phase|Takeshi Seki,Yong-Chang Lau,Junya Ikeda,Kohei Fujiwara,Akihiro Ozawa,Satoshi Iihama,Kentaro Nomura,Atsushi Tsukazaki###
(818140, 818142)
 A definite increase in the spin-chargeconversion efficiency (xi) is observed at textitT<missing VAR> <textitT<missing VAR>textrmC, indicating that the phase transition to theferromagnetic CSS promotes the highly efficient spin-charge conversion.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[349.0, 170, 'K', 4]

In
###Enhancement of Spin-Charge Conversion Efficiency for Co$_{3}$Sn$_{2}$S$_{2}$ across Transition from Paramagnetic to Ferromagnetic Phase|Takeshi Seki,Yong-Chang Lau,Junya Ikeda,Kohei Fujiwara,Akihiro Ozawa,Satoshi Iihama,Kentaro Nomura,Atsushi Tsukazaki###
(818159, 818159)
 Inaddition, our theoretical calculation shows the increase in spin Hallconductivity with the emergence of magnetic moment at textitT<missing VAR> <textitT<missing VAR>textrmC, which is consistent with the experimental observation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[368.0, 170, 'K', 5]

C
###Enhancement of Spin-Charge Conversion Efficiency for Co$_{3}$Sn$_{2}$S$_{2}$ across Transition from Paramagnetic to Ferromagnetic Phase|Takeshi Seki,Yong-Chang Lau,Junya Ikeda,Kohei Fujiwara,Akihiro Ozawa,Satoshi Iihama,Kentaro Nomura,Atsushi Tsukazaki###
(818209, 818209)
 Inaddition, our theoretical calculation shows the increase in spin Hallconductivity with the emergence of magnetic moment at textitT<missing VAR> <textitT<missing VAR>textrmC, which is consistent with the experimental observation.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[418.0, 170, 'K', 5]

Cu
###Magnetoresistive behaviour of ternary Cu-based materials processed by high-pressure torsion|M. Kasalo,S. Wurster,M. Stückler,M. Zawodzki,L. Weissitsch,R. Pippan,A. Bachmaier###
(818243, 818243)
Magnetoresistive behaviour of ternary Cu-based materials processed by high-pressure torsion.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[313.0, 2.45, '%', 7],[345.0, 1, 'h', 7]

Cu
###Magnetoresistive behaviour of ternary Cu-based materials processed by high-pressure torsion|M. Kasalo,S. Wurster,M. Stückler,M. Zawodzki,L. Weissitsch,R. Pippan,A. Bachmaier###
(818278, 818278)
 Severe plastic deformation using high-pressure torsion of ternary Cu-basedmaterials (CuFeCo and CuFeNi) was used to fabricate bulk samples with ananocrystalline microstructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[278.0, 2.45, '%', 6],[310.0, 1, 'h', 6]

CuFeCo
###Magnetoresistive behaviour of ternary Cu-based materials processed by high-pressure torsion|M. Kasalo,S. Wurster,M. Stückler,M. Zawodzki,L. Weissitsch,R. Pippan,A. Bachmaier###
(818286, 818288)
 Severe plastic deformation using high-pressure torsion of ternary Cu-basedmaterials (CuFeCo and CuFeNi) was used to fabricate bulk samples with ananocrystalline microstructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[268.0, 2.45, '%', 6],[300.0, 1, 'h', 6]

Ni
###Magnetoresistive behaviour of ternary Cu-based materials processed by high-pressure torsion|M. Kasalo,S. Wurster,M. Stückler,M. Zawodzki,L. Weissitsch,R. Pippan,A. Bachmaier###
(818294, 818294)
 Severe plastic deformation using high-pressure torsion of ternary Cu-basedmaterials (CuFeCo and CuFeNi) was used to fabricate bulk samples with ananocrystalline microstructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[262.0, 2.45, '%', 6],[294.0, 1, 'h', 6]

Cu62Fe19Ni19
###Magnetoresistive behaviour of ternary Cu-based materials processed by high-pressure torsion|M. Kasalo,S. Wurster,M. Stückler,M. Zawodzki,L. Weissitsch,R. Pippan,A. Bachmaier###
(818576, 818581)
 The highest drop in room temperature resistivity (2.45% at 1790k<missing VAR>A/m) was found in Cu62Fe19Ni19 after annealing for 1 h at 400 degC.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.19,0,0.19,0.62,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 2.45, '%', 0],[7.0, 1, 'h', 0]

C
###Magnetoresistive behaviour of ternary Cu-based materials processed by high-pressure torsion|M. Kasalo,S. Wurster,M. Stückler,M. Zawodzki,L. Weissitsch,R. Pippan,A. Bachmaier###
(818595, 818595)
 The highest drop in room temperature resistivity (2.45% at 1790k<missing VAR>A/m) was found in Cu62Fe19Ni19 after annealing for 1 h at 400 degC.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 2.45, '%', 0],[7.0, 1, 'h', 0]

Fe3N
###Emergent magnetic states and tunable exchange bias at all 3d nitride heterointerfaces|Qiao Jin,Qinghua Zhang,He Bai,Amanda Huon,Timothy Charlton,Shengru Chen,Shan Lin,Haitao Hong,Ting Cui,Can Wang,Haizhong Guo,Lin Gu,Tao Zhu,Michael R. Fitzsimmons,Kui-juan Jin,Shanmin Wang,Er-Jia Guo###
(818799, 818801)
 Here we report the fabrication of single-crystallineferromagnetic Fe3N thin films with precisely controlled thickness.
Featurization terminated normally.
0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 3, 'd', 3],[86.0, 2, 'u', 2],[148.0, 5, 'u', 5]

As
###Emergent magnetic states and tunable exchange bias at all 3d nitride heterointerfaces|Qiao Jin,Qinghua Zhang,He Bai,Amanda Huon,Timothy Charlton,Shengru Chen,Shan Lin,Haitao Hong,Ting Cui,Can Wang,Haizhong Guo,Lin Gu,Tao Zhu,Michael R. Fitzsimmons,Kui-juan Jin,Shanmin Wang,Er-Jia Guo###
(818816, 818816)
 As filmthickness decreasing, the magnetization deteriorates dramatically, andelectronic state transits from metallic to insulating.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 3, 'd', 4],[71.0, 2, 'u', 1],[133.0, 5, 'u', 4]

Fe3N
###Emergent magnetic states and tunable exchange bias at all 3d nitride heterointerfaces|Qiao Jin,Qinghua Zhang,He Bai,Amanda Huon,Timothy Charlton,Shengru Chen,Shan Lin,Haitao Hong,Ting Cui,Can Wang,Haizhong Guo,Lin Gu,Tao Zhu,Michael R. Fitzsimmons,Kui-juan Jin,Shanmin Wang,Er-Jia Guo###
(818871, 818873)
 Strikingly, thehigh-temperature ferromagnetism maintains in a Fe3N layer with a thickness downto 2 u.
Featurization terminated normally.
0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, 3, 'd', 5],[14.0, 2, 'u', 0],[76.0, 5, 'u', 3]

Fe3N
###Emergent magnetic states and tunable exchange bias at all 3d nitride heterointerfaces|Qiao Jin,Qinghua Zhang,He Bai,Amanda Huon,Timothy Charlton,Shengru Chen,Shan Lin,Haitao Hong,Ting Cui,Can Wang,Haizhong Guo,Lin Gu,Tao Zhu,Michael R. Fitzsimmons,Kui-juan Jin,Shanmin Wang,Er-Jia Guo###
(818940, 818942)
 The magnetoresistance exhibits a strong in-planeanisotropy and meanwhile the anomalous Hall resistance reserves its sign whenFe3N layer thickness exceeds 5 u.
Featurization terminated normally.
0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[274.0, 3, 'd', 8],[53.0, 2, 'u', 3],[7.0, 5, 'u', 0]

Fe3N
###Emergent magnetic states and tunable exchange bias at all 3d nitride heterointerfaces|Qiao Jin,Qinghua Zhang,He Bai,Amanda Huon,Timothy Charlton,Shengru Chen,Shan Lin,Haitao Hong,Ting Cui,Can Wang,Haizhong Guo,Lin Gu,Tao Zhu,Michael R. Fitzsimmons,Kui-juan Jin,Shanmin Wang,Er-Jia Guo###
(818983, 818985)
 Furthermore, we observe a sizable exchangebias at the interfaces between a ferromagnetic Fe3N and an antiferromagneticCrN.
Featurization terminated normally.
0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[317.0, 3, 'd', 10],[96.0, 2, 'u', 5],[34.0, 5, 'u', 2]

CrN
###Emergent magnetic states and tunable exchange bias at all 3d nitride heterointerfaces|Qiao Jin,Qinghua Zhang,He Bai,Amanda Huon,Timothy Charlton,Shengru Chen,Shan Lin,Haitao Hong,Ting Cui,Can Wang,Haizhong Guo,Lin Gu,Tao Zhu,Michael R. Fitzsimmons,Kui-juan Jin,Shanmin Wang,Er-Jia Guo###
(818994, 818995)
 Furthermore, we observe a sizable exchangebias at the interfaces between a ferromagnetic Fe3N and an antiferromagneticCrN.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[328.0, 3, 'd', 10],[107.0, 2, 'u', 5],[45.0, 5, 'u', 2]

C
###Emergent magnetic states and tunable exchange bias at all 3d nitride heterointerfaces|Qiao Jin,Qinghua Zhang,He Bai,Amanda Huon,Timothy Charlton,Shengru Chen,Shan Lin,Haitao Hong,Ting Cui,Can Wang,Haizhong Guo,Lin Gu,Tao Zhu,Michael R. Fitzsimmons,Kui-juan Jin,Shanmin Wang,Er-Jia Guo###
(819036, 819036)
 The exchange bias field and saturation moment strongly depend on thecontrollable bending curvature using cylinder diameter engineering (CDE)technique, implying the tunable magnetic states under lattice deformation.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[370.0, 3, 'd', 11],[149.0, 2, 'u', 6],[87.0, 5, 'u', 3]

Mn3Si2Te6
###Magnetic Structure and Spin Fluctuations in Colossal Magnetoresistance Ferrimagnet Mn3Si2Te6|Feng Ye,Masaaki Matsuda,Zachary Morgan,Todd Sherline,Yifei Ni,Hengdi Zhao,G. Cao###
(819136, 819141)
Magnetic Structure and Spin Fluctuations in Colossal Magnetoresistance Ferrimagnet Mn3Si2Te6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0.2727272727272727,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5454545454545454,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 78, 'K', 1],[127.0, 103, ',', 7]

Mn3Si2Te6
###Magnetic Structure and Spin Fluctuations in Colossal Magnetoresistance Ferrimagnet Mn3Si2Te6|Feng Ye,Masaaki Matsuda,Zachary Morgan,Todd Sherline,Yifei Ni,Hengdi Zhao,G. Cao###
(819150, 819155)
 The ferrimagnetic insulator Mn3Si2Te6, which features a Curie temperature Tcat 78 K and a delicate yet consequential magnetic frustration, exhibitscolossal magnetoresistance (CMR) when the magnetic field is applied along themagnetic hard axis, surprisingly inconsistent with existing precedents [Y.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0.2727272727272727,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5454545454545454,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 78, 'K', 0],[113.0, 103, ',', 6]

Tc
###Magnetic Structure and Spin Fluctuations in Colossal Magnetoresistance Ferrimagnet Mn3Si2Te6|Feng Ye,Masaaki Matsuda,Zachary Morgan,Todd Sherline,Yifei Ni,Hengdi Zhao,G. Cao###
(819168, 819168)
 The ferrimagnetic insulator Mn3Si2Te6, which features a Curie temperature Tcat 78 K and a delicate yet consequential magnetic frustration, exhibitscolossal magnetoresistance (CMR) when the magnetic field is applied along themagnetic hard axis, surprisingly inconsistent with existing precedents [Y.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 78, 'K', 0],[100.0, 103, ',', 6]

C
###Magnetic Structure and Spin Fluctuations in Colossal Magnetoresistance Ferrimagnet Mn3Si2Te6|Feng Ye,Masaaki Matsuda,Zachary Morgan,Todd Sherline,Yifei Ni,Hengdi Zhao,G. Cao###
(819197, 819197)
 The ferrimagnetic insulator Mn3Si2Te6, which features a Curie temperature Tcat 78 K and a delicate yet consequential magnetic frustration, exhibitscolossal magnetoresistance (CMR) when the magnetic field is applied along themagnetic hard axis, surprisingly inconsistent with existing precedents [Y.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 78, 'K', 0],[71.0, 103, ',', 6]

Y
###Magnetic Structure and Spin Fluctuations in Colossal Magnetoresistance Ferrimagnet Mn3Si2Te6|Feng Ye,Masaaki Matsuda,Zachary Morgan,Todd Sherline,Yifei Ni,Hengdi Zhao,G. Cao###
(819237, 819237)
 The ferrimagnetic insulator Mn3Si2Te6, which features a Curie temperature Tcat 78 K and a delicate yet consequential magnetic frustration, exhibitscolossal magnetoresistance (CMR) when the magnetic field is applied along themagnetic hard axis, surprisingly inconsistent with existing precedents [Y.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 78, 'K', 0],[31.0, 103, ',', 6]

Ni
###Magnetic Structure and Spin Fluctuations in Colossal Magnetoresistance Ferrimagnet Mn3Si2Te6|Feng Ye,Masaaki Matsuda,Zachary Morgan,Todd Sherline,Yifei Ni,Hengdi Zhao,G. Cao###
(819240, 819240)
 Ni,H.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 78, 'K', 1],[28.0, 103, ',', 5]

H
###Magnetic Structure and Spin Fluctuations in Colossal Magnetoresistance Ferrimagnet Mn3Si2Te6|Feng Ye,Masaaki Matsuda,Zachary Morgan,Todd Sherline,Yifei Ni,Hengdi Zhao,G. Cao###
(819244, 819244)
 Ni,H.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 78, 'K', 1],[24.0, 103, ',', 5]

Y
###Magnetic Structure and Spin Fluctuations in Colossal Magnetoresistance Ferrimagnet Mn3Si2Te6|Feng Ye,Masaaki Matsuda,Zachary Morgan,Todd Sherline,Yifei Ni,Hengdi Zhao,G. Cao###
(819250, 819250)
 Zhao, Y.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 78, 'K', 2],[18.0, 103, ',', 4]

B
###Magnetic Structure and Spin Fluctuations in Colossal Magnetoresistance Ferrimagnet Mn3Si2Te6|Feng Ye,Masaaki Matsuda,Zachary Morgan,Todd Sherline,Yifei Ni,Hengdi Zhao,G. Cao###
(819266, 819266)
 B 103, L<missing VAR>161105 (2021)].
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 78, 'K', 6],[2.0, 103, ',', 0]

C
###Magnetic Structure and Spin Fluctuations in Colossal Magnetoresistance Ferrimagnet Mn3Si2Te6|Feng Ye,Masaaki Matsuda,Zachary Morgan,Todd Sherline,Yifei Ni,Hengdi Zhao,G. Cao###
(819339, 819339)
 This discoverymotivates a thorough single-crystal neutron diffraction study in order to gaininsights into the magnetic structure and its hidden correlation with the newtype of CMR.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 78, 'K', 7],[71.0, 103, ',', 1]

Tc
###Magnetic Structure and Spin Fluctuations in Colossal Magnetoresistance Ferrimagnet Mn3Si2Te6|Feng Ye,Masaaki Matsuda,Zachary Morgan,Todd Sherline,Yifei Ni,Hengdi Zhao,G. Cao###
(819362, 819362)
 Here we report a noncollinear magnetic structure below the Tcwhere the moments lie predominantly within the basal plane but tilt toward thec<missing VAR> axis by 10o<missing VAR> at ambient conditions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[190.0, 78, 'K', 8],[94.0, 103, ',', 2]

Tc
###Magnetic Structure and Spin Fluctuations in Colossal Magnetoresistance Ferrimagnet Mn3Si2Te6|Feng Ye,Masaaki Matsuda,Zachary Morgan,Todd Sherline,Yifei Ni,Hengdi Zhao,G. Cao###
(819433, 819433)
 A substantial magnetic diffuse scatteringdecays slowly and persists well above the Tc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[261.0, 78, 'K', 9],[165.0, 103, ',', 3]

C
###Magnetic Structure and Spin Fluctuations in Colossal Magnetoresistance Ferrimagnet Mn3Si2Te6|Feng Ye,Masaaki Matsuda,Zachary Morgan,Todd Sherline,Yifei Ni,Hengdi Zhao,G. Cao###
(819521, 819521)
 Application of magnetic field along the c<missing VAR> axis, renders a swiftoccurrence of CMR but only a slow tilting of the magnetic moments toward the c<missing VAR>axis.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[349.0, 78, 'K', 11],[253.0, 103, ',', 5]

Sm2Ir2O7
###Magnetotransport of Sm$_2$Ir$_2$O$_7$ across the pressure-induced quantum-critical phase boundary|M. J. Coak,K. Götze,T. Northam De La Fuente,C. Castelnovo,J. P. Tidey,J. Singleton,A. T. Boothroyd,D. Prabhakaran,P. A. Goddard###
(819589, 819594)
Magnetotransport of Sm2Ir2O7 across the pressure-induced quantum-critical phase boundary.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6363636363636364,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 63, 'kbar', 2],[475.0, 5, 'K', 6]

Sm2Ir2O7
###Magnetotransport of Sm$_2$Ir$_2$O$_7$ across the pressure-induced quantum-critical phase boundary|M. J. Coak,K. Götze,T. Northam De La Fuente,C. Castelnovo,J. P. Tidey,J. Singleton,A. T. Boothroyd,D. Prabhakaran,P. A. Goddard###
(819697, 819702)
 We have measuredthe transport and magnetotransport properties of single-crystalSm2Ir2O7 up to and beyond the pressure-induced quantum critical point(Q<missing VAR>CP) for all-in-all-out (AIAO) Ir order at p<missing VAR>rm c<missing VAR>  63 kbar previouslyidentified by resonant X<missing VAR>-ray scattering.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6363636363636364,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 63, 'kbar', 0],[367.0, 5, 'K', 4]

P
###Magnetotransport of Sm$_2$Ir$_2$O$_7$ across the pressure-induced quantum-critical phase boundary|M. J. Coak,K. Götze,T. Northam De La Fuente,C. Castelnovo,J. P. Tidey,J. Singleton,A. T. Boothroyd,D. Prabhakaran,P. A. Goddard###
(819728, 819728)
 We have measuredthe transport and magnetotransport properties of single-crystalSm2Ir2O7 up to and beyond the pressure-induced quantum critical point(Q<missing VAR>CP) for all-in-all-out (AIAO) Ir order at p<missing VAR>rm c<missing VAR>  63 kbar previouslyidentified by resonant X<missing VAR>-ray scattering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 63, 'kbar', 0],[341.0, 5, 'K', 4]

I
###Magnetotransport of Sm$_2$Ir$_2$O$_7$ across the pressure-induced quantum-critical phase boundary|M. J. Coak,K. Götze,T. Northam De La Fuente,C. Castelnovo,J. P. Tidey,J. Singleton,A. T. Boothroyd,D. Prabhakaran,P. A. Goddard###
(819743, 819743)
 We have measuredthe transport and magnetotransport properties of single-crystalSm2Ir2O7 up to and beyond the pressure-induced quantum critical point(Q<missing VAR>CP) for all-in-all-out (AIAO) Ir order at p<missing VAR>rm c<missing VAR>  63 kbar previouslyidentified by resonant X<missing VAR>-ray scattering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 63, 'kbar', 0],[326.0, 5, 'K', 4]

O
###Magnetotransport of Sm$_2$Ir$_2$O$_7$ across the pressure-induced quantum-critical phase boundary|M. J. Coak,K. Götze,T. Northam De La Fuente,C. Castelnovo,J. P. Tidey,J. Singleton,A. T. Boothroyd,D. Prabhakaran,P. A. Goddard###
(819745, 819745)
 We have measuredthe transport and magnetotransport properties of single-crystalSm2Ir2O7 up to and beyond the pressure-induced quantum critical point(Q<missing VAR>CP) for all-in-all-out (AIAO) Ir order at p<missing VAR>rm c<missing VAR>  63 kbar previouslyidentified by resonant X<missing VAR>-ray scattering.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 63, 'kbar', 0],[324.0, 5, 'K', 4]

Ir
###Magnetotransport of Sm$_2$Ir$_2$O$_7$ across the pressure-induced quantum-critical phase boundary|M. J. Coak,K. Götze,T. Northam De La Fuente,C. Castelnovo,J. P. Tidey,J. Singleton,A. T. Boothroyd,D. Prabhakaran,P. A. Goddard###
(819748, 819748)
 We have measuredthe transport and magnetotransport properties of single-crystalSm2Ir2O7 up to and beyond the pressure-induced quantum critical point(Q<missing VAR>CP) for all-in-all-out (AIAO) Ir order at p<missing VAR>rm c<missing VAR>  63 kbar previouslyidentified by resonant X<missing VAR>-ray scattering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 63, 'kbar', 0],[321.0, 5, 'K', 4]

I
###Magnetotransport of Sm$_2$Ir$_2$O$_7$ across the pressure-induced quantum-critical phase boundary|M. J. Coak,K. Götze,T. Northam De La Fuente,C. Castelnovo,J. P. Tidey,J. Singleton,A. T. Boothroyd,D. Prabhakaran,P. A. Goddard###
(819852, 819852)
 Instead, the metal-insulator transition temperature, whichtracks the decrease in the AIAO ordering temperature for pressures up to 30kbar, begins to increase under further application of pressure, pointing to thepresence of an as-yet unidentified localization mechanism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 63, 'kbar', 2],[217.0, 5, 'K', 2]

O
###Magnetotransport of Sm$_2$Ir$_2$O$_7$ across the pressure-induced quantum-critical phase boundary|M. J. Coak,K. Götze,T. Northam De La Fuente,C. Castelnovo,J. P. Tidey,J. Singleton,A. T. Boothroyd,D. Prabhakaran,P. A. Goddard###
(819854, 819854)
 Instead, the metal-insulator transition temperature, whichtracks the decrease in the AIAO ordering temperature for pressures up to 30kbar, begins to increase under further application of pressure, pointing to thepresence of an as-yet unidentified localization mechanism.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 63, 'kbar', 2],[215.0, 5, 'K', 2]

Ir
###Magnetotransport of Sm$_2$Ir$_2$O$_7$ across the pressure-induced quantum-critical phase boundary|M. J. Coak,K. Götze,T. Northam De La Fuente,C. Castelnovo,J. P. Tidey,J. Singleton,A. T. Boothroyd,D. Prabhakaran,P. A. Goddard###
(819930, 819930)
 The magnetotransportdoes track the suppression of Ir magnetism, however, with a strong hysteresisobserved only within the AIAO phase boundary, similar to that found forHo2Ir2O7 and attributed to plastic deformation of Ir domains.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[171.0, 63, 'kbar', 3],[139.0, 5, 'K', 1]

I
###Magnetotransport of Sm$_2$Ir$_2$O$_7$ across the pressure-induced quantum-critical phase boundary|M. J. Coak,K. Götze,T. Northam De La Fuente,C. Castelnovo,J. P. Tidey,J. Singleton,A. T. Boothroyd,D. Prabhakaran,P. A. Goddard###
(819956, 819956)
 The magnetotransportdoes track the suppression of Ir magnetism, however, with a strong hysteresisobserved only within the AIAO phase boundary, similar to that found forHo2Ir2O7 and attributed to plastic deformation of Ir domains.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[197.0, 63, 'kbar', 3],[113.0, 5, 'K', 1]

O
###Magnetotransport of Sm$_2$Ir$_2$O$_7$ across the pressure-induced quantum-critical phase boundary|M. J. Coak,K. Götze,T. Northam De La Fuente,C. Castelnovo,J. P. Tidey,J. Singleton,A. T. Boothroyd,D. Prabhakaran,P. A. Goddard###
(819958, 819958)
 The magnetotransportdoes track the suppression of Ir magnetism, however, with a strong hysteresisobserved only within the AIAO phase boundary, similar to that found forHo2Ir2O7 and attributed to plastic deformation of Ir domains.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[199.0, 63, 'kbar', 3],[111.0, 5, 'K', 1]

Ho2Ir2O7
###Magnetotransport of Sm$_2$Ir$_2$O$_7$ across the pressure-induced quantum-critical phase boundary|M. J. Coak,K. Götze,T. Northam De La Fuente,C. Castelnovo,J. P. Tidey,J. Singleton,A. T. Boothroyd,D. Prabhakaran,P. A. Goddard###
(819976, 819981)
 The magnetotransportdoes track the suppression of Ir magnetism, however, with a strong hysteresisobserved only within the AIAO phase boundary, similar to that found forHo2Ir2O7 and attributed to plastic deformation of Ir domains.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6363636363636364,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[217.0, 63, 'kbar', 3],[88.0, 5, 'K', 1]

Ir
###Magnetotransport of Sm$_2$Ir$_2$O$_7$ across the pressure-induced quantum-critical phase boundary|M. J. Coak,K. Götze,T. Northam De La Fuente,C. Castelnovo,J. P. Tidey,J. Singleton,A. T. Boothroyd,D. Prabhakaran,P. A. Goddard###
(819995, 819995)
 The magnetotransportdoes track the suppression of Ir magnetism, however, with a strong hysteresisobserved only within the AIAO phase boundary, similar to that found forHo2Ir2O7 and attributed to plastic deformation of Ir domains.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[236.0, 63, 'kbar', 3],[74.0, 5, 'K', 1]

CP
###Magnetotransport of Sm$_2$Ir$_2$O$_7$ across the pressure-induced quantum-critical phase boundary|M. J. Coak,K. Götze,T. Northam De La Fuente,C. Castelnovo,J. P. Tidey,J. Singleton,A. T. Boothroyd,D. Prabhakaran,P. A. Goddard###
(820100, 820101)
A Weyl semimetal phase is predicted to occur in the vicinity of the Q<missing VAR>CP.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[341.0, 63, 'kbar', 5],[31.0, 5, 'K', 1]

LaTiO3
###Linear colossal magnetoresistance driven by magnetic textures in LaTiO3 thin films on SrTiO3|Teresa Tschirner,Berengar Leikert,Felix Kern,Daniel Wolf,Axel Lubk,Martin Kamp,Kirill Miller,Fabian Hartmann,Sven Höfling,Bernd Büchner,Joseph Dufouleur,Marc Gabay,Michael Sing,Ralph Claessen,Louis Veyrat###
(820192, 820195)
Linear colossal magnetoresistance driven by magnetic textures in LaTiO3 thin films on SrTiO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[280.0, 6500, '%', 6],[284.0, 9, 'T', 6]

SrTiO3
###Linear colossal magnetoresistance driven by magnetic textures in LaTiO3 thin films on SrTiO3|Teresa Tschirner,Berengar Leikert,Felix Kern,Daniel Wolf,Axel Lubk,Martin Kamp,Kirill Miller,Fabian Hartmann,Sven Höfling,Bernd Büchner,Joseph Dufouleur,Marc Gabay,Michael Sing,Ralph Claessen,Louis Veyrat###
(820203, 820206)
Linear colossal magnetoresistance driven by magnetic textures in LaTiO3 thin films on SrTiO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[269.0, 6500, '%', 6],[273.0, 9, 'T', 6]

LaTiO3
###Linear colossal magnetoresistance driven by magnetic textures in LaTiO3 thin films on SrTiO3|Teresa Tschirner,Berengar Leikert,Felix Kern,Daniel Wolf,Axel Lubk,Martin Kamp,Kirill Miller,Fabian Hartmann,Sven Höfling,Bernd Büchner,Joseph Dufouleur,Marc Gabay,Michael Sing,Ralph Claessen,Louis Veyrat###
(820446, 820449)
 Here, linear positive magnetoresistance caused bymagnetic texture is reported in chLaTiO3/chSrTiO3 heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 6500, '%', 1],[30.0, 9, 'T', 1]

SrTiO3
###Linear colossal magnetoresistance driven by magnetic textures in LaTiO3 thin films on SrTiO3|Teresa Tschirner,Berengar Leikert,Felix Kern,Daniel Wolf,Axel Lubk,Martin Kamp,Kirill Miller,Fabian Hartmann,Sven Höfling,Bernd Büchner,Joseph Dufouleur,Marc Gabay,Michael Sing,Ralph Claessen,Louis Veyrat###
(820452, 820455)
 Here, linear positive magnetoresistance caused bymagnetic texture is reported in chLaTiO3/chSrTiO3 heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 6500, '%', 1],[24.0, 9, 'T', 1]

V
###Linear colossal magnetoresistance driven by magnetic textures in LaTiO3 thin films on SrTiO3|Teresa Tschirner,Berengar Leikert,Felix Kern,Daniel Wolf,Axel Lubk,Martin Kamp,Kirill Miller,Fabian Hartmann,Sven Höfling,Bernd Büchner,Joseph Dufouleur,Marc Gabay,Michael Sing,Ralph Claessen,Louis Veyrat###
(820528, 820528)
 This colossal value is understood bythe unusual combination of a very high thin film mobility, up to 40 000cm2/V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 6500, '%', 1],[49.0, 9, 'T', 1]

LaTiO3
###Linear colossal magnetoresistance driven by magnetic textures in LaTiO3 thin films on SrTiO3|Teresa Tschirner,Berengar Leikert,Felix Kern,Daniel Wolf,Axel Lubk,Martin Kamp,Kirill Miller,Fabian Hartmann,Sven Höfling,Bernd Büchner,Joseph Dufouleur,Marc Gabay,Michael Sing,Ralph Claessen,Louis Veyrat###
(820588, 820591)
 These regionscorrelate with a striped magnetic structure, compatible with a spiral magnetictexture in the chLaTiO3 film, revealed by low temperature Lorentztransmission electron microscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 6500, '%', 3],[109.0, 9, 'T', 3]

PrTi2Al20
###Extremely Large Magnetoresistance and Anisotropic Transport in Multipolar Kondo System PrTi$_{2}$Al$_{20}$|Takachika Isomae,Akito Sakai,Mingxuan Fu,Takanori Taniguchi,Masashi Takigawa,Satoru Nakatsuji###
(820672, 820676)
Extremely Large Magnetoresistance and Anisotropic Transport in Multipolar Kondo System PrTi2Al20.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.8695652173913043,0,0,0,0,0,0,0,0,0.08695652173913043,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.043478260869565216,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[267.0, 3, '%', 4]

Pr
###Extremely Large Magnetoresistance and Anisotropic Transport in Multipolar Kondo System PrTi$_{2}$Al$_{20}$|Takachika Isomae,Akito Sakai,Mingxuan Fu,Takanori Taniguchi,Masashi Takigawa,Satoru Nakatsuji###
(820743, 820743)
 Amodel material platform of this kind is the cubic heavy-fermion systemPrTr2Al20 (Tr Ti, V), which hosts a nonmagneticcrystal-electric-field (CE<missing VAR>F) ground state and substantial Kondo entanglement ofthe local quadrupolar and octopolar moments with the conduction electron sea.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[200.0, 3, '%', 2]

Al20
###Extremely Large Magnetoresistance and Anisotropic Transport in Multipolar Kondo System PrTi$_{2}$Al$_{20}$|Takachika Isomae,Akito Sakai,Mingxuan Fu,Takanori Taniguchi,Masashi Takigawa,Satoru Nakatsuji###
(820746, 820747)
 Amodel material platform of this kind is the cubic heavy-fermion systemPrTr2Al20 (Tr Ti, V), which hosts a nonmagneticcrystal-electric-field (CE<missing VAR>F) ground state and substantial Kondo entanglement ofthe local quadrupolar and octopolar moments with the conduction electron sea.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[196.0, 3, '%', 2]

Ti
###Extremely Large Magnetoresistance and Anisotropic Transport in Multipolar Kondo System PrTi$_{2}$Al$_{20}$|Takachika Isomae,Akito Sakai,Mingxuan Fu,Takanori Taniguchi,Masashi Takigawa,Satoru Nakatsuji###
(820752, 820752)
 Amodel material platform of this kind is the cubic heavy-fermion systemPrTr2Al20 (Tr Ti, V), which hosts a nonmagneticcrystal-electric-field (CE<missing VAR>F) ground state and substantial Kondo entanglement ofthe local quadrupolar and octopolar moments with the conduction electron sea.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[191.0, 3, '%', 2]

V
###Extremely Large Magnetoresistance and Anisotropic Transport in Multipolar Kondo System PrTi$_{2}$Al$_{20}$|Takachika Isomae,Akito Sakai,Mingxuan Fu,Takanori Taniguchi,Masashi Takigawa,Satoru Nakatsuji###
(820755, 820755)
 Amodel material platform of this kind is the cubic heavy-fermion systemPrTr2Al20 (Tr Ti, V), which hosts a nonmagneticcrystal-electric-field (CE<missing VAR>F) ground state and substantial Kondo entanglement ofthe local quadrupolar and octopolar moments with the conduction electron sea.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 3, '%', 2]

C
###Extremely Large Magnetoresistance and Anisotropic Transport in Multipolar Kondo System PrTi$_{2}$Al$_{20}$|Takachika Isomae,Akito Sakai,Mingxuan Fu,Takanori Taniguchi,Masashi Takigawa,Satoru Nakatsuji###
(820775, 820775)
 Amodel material platform of this kind is the cubic heavy-fermion systemPrTr2Al20 (Tr Ti, V), which hosts a nonmagneticcrystal-electric-field (CE<missing VAR>F) ground state and substantial Kondo entanglement ofthe local quadrupolar and octopolar moments with the conduction electron sea.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[168.0, 3, '%', 2]

F
###Extremely Large Magnetoresistance and Anisotropic Transport in Multipolar Kondo System PrTi$_{2}$Al$_{20}$|Takachika Isomae,Akito Sakai,Mingxuan Fu,Takanori Taniguchi,Masashi Takigawa,Satoru Nakatsuji###
(820777, 820777)
 Amodel material platform of this kind is the cubic heavy-fermion systemPrTr2Al20 (Tr Ti, V), which hosts a nonmagneticcrystal-electric-field (CE<missing VAR>F) ground state and substantial Kondo entanglement ofthe local quadrupolar and octopolar moments with the conduction electron sea.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 3, '%', 2]

PrTi2Al20
###Extremely Large Magnetoresistance and Anisotropic Transport in Multipolar Kondo System PrTi$_{2}$Al$_{20}$|Takachika Isomae,Akito Sakai,Mingxuan Fu,Takanori Taniguchi,Masashi Takigawa,Satoru Nakatsuji###
(820841, 820845)
Here, we explore magnetoresistance (MR) and Hall effect of PrTi2Al20that develops ferroquadrupolar (FQ) order below TQ sim 2 K and compareits behavior with that of the non-4f<missing VAR> analog, LaTi2Al20.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.8695652173913043,0,0,0,0,0,0,0,0,0.08695652173913043,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.043478260869565216,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 3, '%', 1]

F
###Extremely Large Magnetoresistance and Anisotropic Transport in Multipolar Kondo System PrTi$_{2}$Al$_{20}$|Takachika Isomae,Akito Sakai,Mingxuan Fu,Takanori Taniguchi,Masashi Takigawa,Satoru Nakatsuji###
(820855, 820855)
Here, we explore magnetoresistance (MR) and Hall effect of PrTi2Al20that develops ferroquadrupolar (FQ) order below TQ sim 2 K and compareits behavior with that of the non-4f<missing VAR> analog, LaTi2Al20.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 3, '%', 1]

K
###Extremely Large Magnetoresistance and Anisotropic Transport in Multipolar Kondo System PrTi$_{2}$Al$_{20}$|Takachika Isomae,Akito Sakai,Mingxuan Fu,Takanori Taniguchi,Masashi Takigawa,Satoru Nakatsuji###
(820870, 820870)
Here, we explore magnetoresistance (MR) and Hall effect of PrTi2Al20that develops ferroquadrupolar (FQ) order below TQ sim 2 K and compareits behavior with that of the non-4f<missing VAR> analog, LaTi2Al20.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 3, '%', 1]

LaTi2Al20
###Extremely Large Magnetoresistance and Anisotropic Transport in Multipolar Kondo System PrTi$_{2}$Al$_{20}$|Takachika Isomae,Akito Sakai,Mingxuan Fu,Takanori Taniguchi,Masashi Takigawa,Satoru Nakatsuji###
(820897, 820901)
Here, we explore magnetoresistance (MR) and Hall effect of PrTi2Al20that develops ferroquadrupolar (FQ) order below TQ sim 2 K and compareits behavior with that of the non-4f<missing VAR> analog, LaTi2Al20.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.8695652173913043,0,0,0,0,0,0,0,0,0.08695652173913043,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.043478260869565216,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 3, '%', 1]

In
###Extremely Large Magnetoresistance and Anisotropic Transport in Multipolar Kondo System PrTi$_{2}$Al$_{20}$|Takachika Isomae,Akito Sakai,Mingxuan Fu,Takanori Taniguchi,Masashi Takigawa,Satoru Nakatsuji###
(820904, 820904)
 In the FQ<missing VAR>ordered phase, PrTi2Al20 displays extremely large magnetoresistance(XMR) of sim 103%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 3, '%', 0]

F
###Extremely Large Magnetoresistance and Anisotropic Transport in Multipolar Kondo System PrTi$_{2}$Al$_{20}$|Takachika Isomae,Akito Sakai,Mingxuan Fu,Takanori Taniguchi,Masashi Takigawa,Satoru Nakatsuji###
(820908, 820908)
 In the FQ<missing VAR>ordered phase, PrTi2Al20 displays extremely large magnetoresistance(XMR) of sim 103%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 3, '%', 0]

PrTi2Al20
###Extremely Large Magnetoresistance and Anisotropic Transport in Multipolar Kondo System PrTi$_{2}$Al$_{20}$|Takachika Isomae,Akito Sakai,Mingxuan Fu,Takanori Taniguchi,Masashi Takigawa,Satoru Nakatsuji###
(820917, 820921)
 In the FQ<missing VAR>ordered phase, PrTi2Al20 displays extremely large magnetoresistance(XMR) of sim 103%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.8695652173913043,0,0,0,0,0,0,0,0,0.08695652173913043,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.043478260869565216,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 3, '%', 0]

(B)
###Extremely Large Magnetoresistance and Anisotropic Transport in Multipolar Kondo System PrTi$_{2}$Al$_{20}$|Takachika Isomae,Akito Sakai,Mingxuan Fu,Takanori Taniguchi,Masashi Takigawa,Satoru Nakatsuji###
(820958, 820960)
 The unsaturated, quasi-linear field (B) dependenceof the XMR violates the conventional Kohlers<missing VAR> scaling and defies descriptionbased on carrier compensation alone.
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 3, '%', 1]

PrTi2Al20
###Extremely Large Magnetoresistance and Anisotropic Transport in Multipolar Kondo System PrTi$_{2}$Al$_{20}$|Takachika Isomae,Akito Sakai,Mingxuan Fu,Takanori Taniguchi,Masashi Takigawa,Satoru Nakatsuji###
(821024, 821028)
 By comparing the MR and the Hall effectobserved in PrTi2Al20 and LaTi2Al20, we conclude that theopen-orbit topology on the electron-type Fermi surface (FS) sheet is key forthe observed XMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.8695652173913043,0,0,0,0,0,0,0,0,0.08695652173913043,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.043478260869565216,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 3, '%', 2]

LaTi2Al20
###Extremely Large Magnetoresistance and Anisotropic Transport in Multipolar Kondo System PrTi$_{2}$Al$_{20}$|Takachika Isomae,Akito Sakai,Mingxuan Fu,Takanori Taniguchi,Masashi Takigawa,Satoru Nakatsuji###
(821032, 821036)
 By comparing the MR and the Hall effectobserved in PrTi2Al20 and LaTi2Al20, we conclude that theopen-orbit topology on the electron-type Fermi surface (FS) sheet is key forthe observed XMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.8695652173913043,0,0,0,0,0,0,0,0,0.08695652173913043,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.043478260869565216,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 3, '%', 2]

(FS)
###Extremely Large Magnetoresistance and Anisotropic Transport in Multipolar Kondo System PrTi$_{2}$Al$_{20}$|Takachika Isomae,Akito Sakai,Mingxuan Fu,Takanori Taniguchi,Masashi Takigawa,Satoru Nakatsuji###
(821066, 821069)
 By comparing the MR and the Hall effectobserved in PrTi2Al20 and LaTi2Al20, we conclude that theopen-orbit topology on the electron-type Fermi surface (FS) sheet is key forthe observed XMR.
Featurization successful!
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 3, '%', 2]

PrTi2Al20
###Extremely Large Magnetoresistance and Anisotropic Transport in Multipolar Kondo System PrTi$_{2}$Al$_{20}$|Takachika Isomae,Akito Sakai,Mingxuan Fu,Takanori Taniguchi,Masashi Takigawa,Satoru Nakatsuji###
(821109, 821113)
 The low-temperature MR and the Hall resistivity inPrTi2Al20 display pronounced anisotropy in the [111] and [001]magnetic fields, which is absent in LaTi2Al20, suggesting that thetransport anisotropy ties in with the anisotropic magnetic-field response ofthe quadrupolar order parameter.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.8695652173913043,0,0,0,0,0,0,0,0,0.08695652173913043,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.043478260869565216,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 3, '%', 3]

LaTi2Al20
###Extremely Large Magnetoresistance and Anisotropic Transport in Multipolar Kondo System PrTi$_{2}$Al$_{20}$|Takachika Isomae,Akito Sakai,Mingxuan Fu,Takanori Taniguchi,Masashi Takigawa,Satoru Nakatsuji###
(821149, 821153)
 The low-temperature MR and the Hall resistivity inPrTi2Al20 display pronounced anisotropy in the [111] and [001]magnetic fields, which is absent in LaTi2Al20, suggesting that thetransport anisotropy ties in with the anisotropic magnetic-field response ofthe quadrupolar order parameter.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.8695652173913043,0,0,0,0,0,0,0,0,0.08695652173913043,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.043478260869565216,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[206.0, 3, '%', 3]

NbN
###Quantum phase transition in two-dimensional NbN superconducting thin films|Tian-Yu Jing,Zi-Yan Han,Zhi-Hao He,Ming-Xin Shao,Peng Li,Zhi-Qing Li###
(821215, 821216)
Quantum phase transition in two-dimensional NbN superconducting thin films.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[448.0, 2, 'D', 8]

NbN
###Quantum phase transition in two-dimensional NbN superconducting thin films|Tian-Yu Jing,Zi-Yan Han,Zhi-Hao He,Ming-Xin Shao,Peng Li,Zhi-Qing Li###
(821250, 821251)
 We systematically investigated the low-temperature transport properties of aseries of NbN epitaxial films with thickness t<missing VAR> ranging from sim2.0 tosim4.0 nm.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[413.0, 2, 'D', 7]

SI
###Quantum phase transition in two-dimensional NbN superconducting thin films|Tian-Yu Jing,Zi-Yan Han,Zhi-Hao He,Ming-Xin Shao,Peng Li,Zhi-Qing Li###
(821294, 821295)
 The films undergo a superconductor-insulator transition (SIT)with decreasing film thickness, and the critical sheet resistance for the SIT<missing VAR>is close to the quantum resistance of Cooper pairs h<missing VAR>/4e<missing VAR>2 (6.45 k<missing VAR>Omega).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[369.0, 2, 'D', 6]

SI
###Quantum phase transition in two-dimensional NbN superconducting thin films|Tian-Yu Jing,Zi-Yan Han,Zhi-Hao He,Ming-Xin Shao,Peng Li,Zhi-Qing Li###
(821323, 821324)
 The films undergo a superconductor-insulator transition (SIT)with decreasing film thickness, and the critical sheet resistance for the SIT<missing VAR>is close to the quantum resistance of Cooper pairs h<missing VAR>/4e<missing VAR>2 (6.45 k<missing VAR>Omega).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[340.0, 2, 'D', 6]

SI
###Quantum phase transition in two-dimensional NbN superconducting thin films|Tian-Yu Jing,Zi-Yan Han,Zhi-Hao He,Ming-Xin Shao,Peng Li,Zhi-Qing Li###
(821383, 821384)
Besides the Berezinski-Koterlitz-Thouless transition, a magnetic-field-drivenSIT<missing VAR> is observed in those two-dimensional (2D) superconducting films (2.6 nmlesssim t<missing VAR> lesssim 4.0 nm).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[280.0, 2, 'D', 5]

SI
###Quantum phase transition in two-dimensional NbN superconducting thin films|Tian-Yu Jing,Zi-Yan Han,Zhi-Hao He,Ming-Xin Shao,Peng Li,Zhi-Qing Li###
(821687, 821688)
 Our results suggest that the quantum Griffiths singularity notonly occurs in the highly crystalline 2D superconductors withsuperconductor-metal transition but also in those with SIT<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 2, 'D', 0]

Nd5
###Synthesis of infinite-layer nickelates and influence of the capping-layer on magnetotransport|Guillaume Krieger,Aravind Raji,Laurent Schlur,Gilles Versini,Corinne Bouillet,Marc Lenertz,Jérôme Robert,Alexandre Gloter,Nathalie Viart,Daniele Preziosi###
(821873, 821874)
 However, despite some formalvalence and crystal symmetry analogies, the electronic properties ofinfinite-layer nickelates are remarkably original accounting, among otherproperties, of a unique Nd5d<missing VAR>-Ni3d<missing VAR> hybridization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 0, ',', 2],[74.0, 0.05, 'and', 2]

Ni3
###Synthesis of infinite-layer nickelates and influence of the capping-layer on magnetotransport|Guillaume Krieger,Aravind Raji,Laurent Schlur,Gilles Versini,Corinne Bouillet,Marc Lenertz,Jérôme Robert,Alexandre Gloter,Nathalie Viart,Daniele Preziosi###
(821877, 821878)
 However, despite some formalvalence and crystal symmetry analogies, the electronic properties ofinfinite-layer nickelates are remarkably original accounting, among otherproperties, of a unique Nd5d<missing VAR>-Ni3d<missing VAR> hybridization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 0, ',', 2],[70.0, 0.05, 'and', 2]

Nd1-x
###Synthesis of infinite-layer nickelates and influence of the capping-layer on magnetotransport|Guillaume Krieger,Aravind Raji,Laurent Schlur,Gilles Versini,Corinne Bouillet,Marc Lenertz,Jérôme Robert,Alexandre Gloter,Nathalie Viart,Daniele Preziosi###
(821933, 821936)
 Here we report about Nd1-xSrxNiO2 (x<missing VAR>  0, 0.05 and 0.2) thinfilms synthesized with and without a SrTiO3 capping-layer, showing very smoothand step-terraced surface morphologies.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[10.0, 0, ',', 0],[12.0, 0.05, 'and', 0]

NiO2
###Synthesis of infinite-layer nickelates and influence of the capping-layer on magnetotransport|Guillaume Krieger,Aravind Raji,Laurent Schlur,Gilles Versini,Corinne Bouillet,Marc Lenertz,Jérôme Robert,Alexandre Gloter,Nathalie Viart,Daniele Preziosi###
(821938, 821940)
 Here we report about Nd1-xSrxNiO2 (x<missing VAR>  0, 0.05 and 0.2) thinfilms synthesized with and without a SrTiO3 capping-layer, showing very smoothand step-terraced surface morphologies.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 0, ',', 0],[8.0, 0.05, 'and', 0]

SrTiO3
###Synthesis of infinite-layer nickelates and influence of the capping-layer on magnetotransport|Guillaume Krieger,Aravind Raji,Laurent Schlur,Gilles Versini,Corinne Bouillet,Marc Lenertz,Jérôme Robert,Alexandre Gloter,Nathalie Viart,Daniele Preziosi###
(821968, 821971)
 Here we report about Nd1-xSrxNiO2 (x<missing VAR>  0, 0.05 and 0.2) thinfilms synthesized with and without a SrTiO3 capping-layer, showing very smoothand step-terraced surface morphologies.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 0, ',', 0],[20.0, 0.05, 'and', 0]

SrTiO3
###Synthesis of infinite-layer nickelates and influence of the capping-layer on magnetotransport|Guillaume Krieger,Aravind Raji,Laurent Schlur,Gilles Versini,Corinne Bouillet,Marc Lenertz,Jérôme Robert,Alexandre Gloter,Nathalie Viart,Daniele Preziosi###
(822064, 822067)
 Angle-dependent anisotropicmagnetoresistance measurements performed with a magnetic field rotatingin-plane or out-of-plane with respect to the sample surface, rendered importantinformation about the magnetic properties of undoped SrTiO3-capped and uncappedsamples.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 0, ',', 1],[116.0, 0.05, 'and', 1]

Nd
###Synthesis of infinite-layer nickelates and influence of the capping-layer on magnetotransport|Guillaume Krieger,Aravind Raji,Laurent Schlur,Gilles Versini,Corinne Bouillet,Marc Lenertz,Jérôme Robert,Alexandre Gloter,Nathalie Viart,Daniele Preziosi###
(822153, 822153)
 We discuss this control in terms of a combined effect between theNd-Ni hybridization and an intra-atomic exchange coupling between the Nd-4f<missing VAR> andNd-5d<missing VAR> states, the latter essentially contributing to the (magneto)transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[207.0, 0, ',', 3],[205.0, 0.05, 'and', 3]

Ni
###Synthesis of infinite-layer nickelates and influence of the capping-layer on magnetotransport|Guillaume Krieger,Aravind Raji,Laurent Schlur,Gilles Versini,Corinne Bouillet,Marc Lenertz,Jérôme Robert,Alexandre Gloter,Nathalie Viart,Daniele Preziosi###
(822155, 822155)
 We discuss this control in terms of a combined effect between theNd-Ni hybridization and an intra-atomic exchange coupling between the Nd-4f<missing VAR> andNd-5d<missing VAR> states, the latter essentially contributing to the (magneto)transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[209.0, 0, ',', 3],[207.0, 0.05, 'and', 3]

Nd
###Synthesis of infinite-layer nickelates and influence of the capping-layer on magnetotransport|Guillaume Krieger,Aravind Raji,Laurent Schlur,Gilles Versini,Corinne Bouillet,Marc Lenertz,Jérôme Robert,Alexandre Gloter,Nathalie Viart,Daniele Preziosi###
(822175, 822175)
 We discuss this control in terms of a combined effect between theNd-Ni hybridization and an intra-atomic exchange coupling between the Nd-4f<missing VAR> andNd-5d<missing VAR> states, the latter essentially contributing to the (magneto)transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[229.0, 0, ',', 3],[227.0, 0.05, 'and', 3]

Nd
###Synthesis of infinite-layer nickelates and influence of the capping-layer on magnetotransport|Guillaume Krieger,Aravind Raji,Laurent Schlur,Gilles Versini,Corinne Bouillet,Marc Lenertz,Jérôme Robert,Alexandre Gloter,Nathalie Viart,Daniele Preziosi###
(822183, 822183)
 We discuss this control in terms of a combined effect between theNd-Ni hybridization and an intra-atomic exchange coupling between the Nd-4f<missing VAR> andNd-5d<missing VAR> states, the latter essentially contributing to the (magneto)transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[237.0, 0, ',', 3],[235.0, 0.05, 'and', 3]

CrSBr
###Strain-programmable van der Waals magnetic tunnel junctions|John Cenker,Dmitry Ovchinnikov,Harvey Yang,Daniel G. Chica,Catherine Zhu,Jiaqi Cai,Geoffrey Diederich,Zhaoyu Liu,Xiaoyang Zhu,Xavier Roy,Ting Cao,Matthew W. Daniels,Jiun-Haw Chu,Di Xiao,Xiaodong Xu###
(822390, 822392)
 Here, we demonstrate a new concept for programmable MTJoperation via strain control of the magnetic states of CrSBr, a layeredantiferromagnetic semiconductor used as the tunnel barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CrSBr
###Strain-programmable van der Waals magnetic tunnel junctions|John Cenker,Dmitry Ovchinnikov,Harvey Yang,Daniel G. Chica,Catherine Zhu,Jiaqi Cai,Geoffrey Diederich,Zhaoyu Liu,Xiaoyang Zhu,Xavier Roy,Ting Cao,Matthew W. Daniels,Jiun-Haw Chu,Di Xiao,Xiaodong Xu###
(822419, 822421)
 Switching the CrSBrfrom antiferromagnetic to ferromagnetic order generates a giant tunnelingmagnetoresistance ratio without external magnetic field at temperatures up to 140 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Strain-programmable van der Waals magnetic tunnel junctions|John Cenker,Dmitry Ovchinnikov,Harvey Yang,Daniel G. Chica,Catherine Zhu,Jiaqi Cai,Geoffrey Diederich,Zhaoyu Liu,Xiaoyang Zhu,Xavier Roy,Ting Cao,Matthew W. Daniels,Jiun-Haw Chu,Di Xiao,Xiaodong Xu###
(822467, 822467)
 Switching the CrSBrfrom antiferromagnetic to ferromagnetic order generates a giant tunnelingmagnetoresistance ratio without external magnetic field at temperatures up to 140 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NdAlGe
###Multi-k magnetic structure and large anomalous Hall effect in candidate magnetic Weyl semimetal NdAlGe|C. Dhital,R. L. Dally,R. Ruvalcaba,R. Gonzalez-Hernandez,J. Guerrero-Sanchez,H. B. Cao,Q. Zhang,W. Tian,Y. Wu,M. D. Frontzek,S. K. Karna,A. Meads,B. Wilson,R. Chapai,D. Graf,J. Bacsa,R. Jin,J. F. DiTusa###
(822697, 822699)
Multi-k<missing VAR> magnetic structure and large anomalous Hall effect in candidate magnetic Weyl semimetal NdAlGe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NdAlGe
###Multi-k magnetic structure and large anomalous Hall effect in candidate magnetic Weyl semimetal NdAlGe|C. Dhital,R. L. Dally,R. Ruvalcaba,R. Gonzalez-Hernandez,J. Guerrero-Sanchez,H. B. Cao,Q. Zhang,W. Tian,Y. Wu,M. D. Frontzek,S. K. Karna,A. Meads,B. Wilson,R. Chapai,D. Graf,J. Bacsa,R. Jin,J. F. DiTusa###
(822729, 822731)
 The magnetic structure, magnetoresistance, and Hall effect ofnon-centrosymmetric magnetic semimetal NdAlGe are investigated revealing anunusual magnetic state and anomalous transport properties that are associatedwith the electronic structure of this non-centrosymmetric compound.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt/Y3Fe5O12
###Hysteresis and training effect in the electric control of spin current in Pt/Y3Fe5O12 heterostructures|Y. D. Sun,Lei Wang,Lili Lang,Ke Xia,S. M. Zhou###
(823116, 823123)
Hysteresis and training effect in the electric control of spin current in Pt/Y3Fe5O12 heterostructures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Pt/Y3Fe5O12
###Hysteresis and training effect in the electric control of spin current in Pt/Y3Fe5O12 heterostructures|Y. D. Sun,Lei Wang,Lili Lang,Ke Xia,S. M. Zhou###
(823155, 823162)
 We have reported on the hysteresis and training effect of spin current inPt/Y3Fe5O12 heterostructures during subsequent cycles of ionic liquid gatevoltage Vg.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Pt
###Hysteresis and training effect in the electric control of spin current in Pt/Y3Fe5O12 heterostructures|Y. D. Sun,Lei Wang,Lili Lang,Ke Xia,S. M. Zhou###
(823357, 823357)
 The above experimental results can be well explained by thescreening charge doping model, in which the charge and the local magneticmoment are asymmetrically distributed in the Pt layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Hysteresis and training effect in the electric control of spin current in Pt/Y3Fe5O12 heterostructures|Y. D. Sun,Lei Wang,Lili Lang,Ke Xia,S. M. Zhou###
(823443, 823443)
 The diode-like behavior isattributed to interplay between the asymmetrically distributed local magneticmoment and the spin current relaxation in the Pt layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Hysteresis and training effect in the electric control of spin current in Pt/Y3Fe5O12 heterostructures|Y. D. Sun,Lei Wang,Lili Lang,Ke Xia,S. M. Zhou###
(823484, 823484)
 The hysteresis and thetraining effect arise from the incompletely reversible process betweenoxidation and reduction of Pt atoms and the evolution of the surface morphologyat the ionic liquid/Pt interface under electric gating.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Hysteresis and training effect in the electric control of spin current in Pt/Y3Fe5O12 heterostructures|Y. D. Sun,Lei Wang,Lili Lang,Ke Xia,S. M. Zhou###
(823511, 823511)
 The hysteresis and thetraining effect arise from the incompletely reversible process betweenoxidation and reduction of Pt atoms and the evolution of the surface morphologyat the ionic liquid/Pt interface under electric gating.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

He
###Optimization of Permalloy properties for magnetic field sensors using He$^+$ irradiation|Giovanni Masciocchi,Johannes Wilhelmus van der Jagt,Maria-Andromachi Syskaki,Jürgen Langer,Gerhard Jakob,Jeffrey McCord,Benjamin Borie,Andreas Kehlberger,Dafine Ravelosona,Mathias Kläui###
(823583, 823583)
Optimization of Permalloy properties for magnetic field sensors using He irradiation.
Featurization terminated normally.
0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 30, 'nm', 3],[440.0, 3, 'D', 9]

In
###Optimization of Permalloy properties for magnetic field sensors using He$^+$ irradiation|Giovanni Masciocchi,Johannes Wilhelmus van der Jagt,Maria-Andromachi Syskaki,Jürgen Langer,Gerhard Jakob,Jeffrey McCord,Benjamin Borie,Andreas Kehlberger,Dafine Ravelosona,Mathias Kläui###
(823684, 823684)
 In this study, we report a significant improvement of themagnetic softness and magnetostriction in a 30 nm Permalloy film after Heirradiation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 30, 'nm', 0],[339.0, 3, 'D', 6]

He
###Optimization of Permalloy properties for magnetic field sensors using He$^+$ irradiation|Giovanni Masciocchi,Johannes Wilhelmus van der Jagt,Maria-Andromachi Syskaki,Jürgen Langer,Gerhard Jakob,Jeffrey McCord,Benjamin Borie,Andreas Kehlberger,Dafine Ravelosona,Mathias Kläui###
(823725, 823725)
 In this study, we report a significant improvement of themagnetic softness and magnetostriction in a 30 nm Permalloy film after Heirradiation.
Featurization terminated normally.
0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 30, 'nm', 0],[298.0, 3, 'D', 6]

In
###Optimization of Permalloy properties for magnetic field sensors using He$^+$ irradiation|Giovanni Masciocchi,Johannes Wilhelmus van der Jagt,Maria-Andromachi Syskaki,Jürgen Langer,Gerhard Jakob,Jeffrey McCord,Benjamin Borie,Andreas Kehlberger,Dafine Ravelosona,Mathias Kläui###
(823787, 823787)
 In addition, the effective magnetostriction of the film issignificantly reduced by a factor ten - below 1times10-7 - afterirradiation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 30, 'nm', 2],[236.0, 3, 'D', 4]

Ni
###Optimization of Permalloy properties for magnetic field sensors using He$^+$ irradiation|Giovanni Masciocchi,Johannes Wilhelmus van der Jagt,Maria-Andromachi Syskaki,Jürgen Langer,Gerhard Jakob,Jeffrey McCord,Benjamin Borie,Andreas Kehlberger,Dafine Ravelosona,Mathias Kläui###
(823868, 823868)
 All the above mentioned effects can be attributed to the isotropiccrystallite growth of the Ni-Fe alloy and to the intermixing at the magneticlayer interfaces under light ion irradiation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 30, 'nm', 3],[155.0, 3, 'D', 3]

Fe
###Optimization of Permalloy properties for magnetic field sensors using He$^+$ irradiation|Giovanni Masciocchi,Johannes Wilhelmus van der Jagt,Maria-Andromachi Syskaki,Jürgen Langer,Gerhard Jakob,Jeffrey McCord,Benjamin Borie,Andreas Kehlberger,Dafine Ravelosona,Mathias Kläui###
(823870, 823870)
 All the above mentioned effects can be attributed to the isotropiccrystallite growth of the Ni-Fe alloy and to the intermixing at the magneticlayer interfaces under light ion irradiation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 30, 'nm', 3],[153.0, 3, 'D', 3]

Ni81Fe19
###Optimization of Permalloy properties for magnetic field sensors using He$^+$ irradiation|Giovanni Masciocchi,Johannes Wilhelmus van der Jagt,Maria-Andromachi Syskaki,Jürgen Langer,Gerhard Jakob,Jeffrey McCord,Benjamin Borie,Andreas Kehlberger,Dafine Ravelosona,Mathias Kläui###
(823927, 823930)
 We support our findings withX<missing VAR>-ray diffraction analysis of the textured Ni81Fe19 alloy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.19,0,0.81,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[210.0, 30, 'nm', 4],[93.0, 3, 'D', 2]

He
###Optimization of Permalloy properties for magnetic field sensors using He$^+$ irradiation|Giovanni Masciocchi,Johannes Wilhelmus van der Jagt,Maria-Andromachi Syskaki,Jürgen Langer,Gerhard Jakob,Jeffrey McCord,Benjamin Borie,Andreas Kehlberger,Dafine Ravelosona,Mathias Kläui###
(823983, 823983)
Our results show that compared to traditional annealing methods, the use ofHe irradiation leads to significant improvements in the magnetic softnessand reduces strain cross sensitivity in Permalloy films required for 3Dpositioning and compass applications.
Featurization terminated normally.
0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[266.0, 30, 'nm', 6],[40.0, 3, 'D', 0]

EuTe4
###Thermal hysteretic behavior and negative magnetoresistance in an unusual charge-density-wave material EuTe4|Q. Q. Zhang,Y. Shi,K. Y. Zhai,W. X. Zhao,X. Du,J. S. Zhou,X. Gu,R. Z. Xu,Y. D. Li,Y. F. Guo,Z. K. Liu,C. Chen,S. -K. Mo,T. K. Kim,C. Cacho,J. W. Yu,W. Li,Y. L. Chen,Jiun-Haw Chu,L. X. Yang###
(824155, 824157)
Thermal hysteretic behavior and negative magnetoresistance in an unusual charge-density-wave material EuTe4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 200, 'meV', 3],[176.0, 400, 'K', 3],[283.0, 7, 'T', 5]

EuTe4
###Thermal hysteretic behavior and negative magnetoresistance in an unusual charge-density-wave material EuTe4|Q. Q. Zhang,Y. Shi,K. Y. Zhai,W. X. Zhao,X. Du,J. S. Zhou,X. Gu,R. Z. Xu,Y. D. Li,Y. F. Guo,Z. K. Liu,C. Chen,S. -K. Mo,T. K. Kim,C. Cacho,J. W. Yu,W. Li,Y. L. Chen,Jiun-Haw Chu,L. X. Yang###
(824160, 824162)
 EuTe4 is a newly-discovered van der Waals material exhibiting a novelcharge-density wave (CD<missing VAR>W) with a large thermal hysteresis in the resistivityand CD<missing VAR>W gap.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 200, 'meV', 2],[171.0, 400, 'K', 2],[278.0, 7, 'T', 4]

C
###Thermal hysteretic behavior and negative magnetoresistance in an unusual charge-density-wave material EuTe4|Q. Q. Zhang,Y. Shi,K. Y. Zhai,W. X. Zhao,X. Du,J. S. Zhou,X. Gu,R. Z. Xu,Y. D. Li,Y. F. Guo,Z. K. Liu,C. Chen,S. -K. Mo,T. K. Kim,C. Cacho,J. W. Yu,W. Li,Y. L. Chen,Jiun-Haw Chu,L. X. Yang###
(824194, 824194)
 EuTe4 is a newly-discovered van der Waals material exhibiting a novelcharge-density wave (CD<missing VAR>W) with a large thermal hysteresis in the resistivityand CD<missing VAR>W gap.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 200, 'meV', 2],[139.0, 400, 'K', 2],[246.0, 7, 'T', 4]

W
###Thermal hysteretic behavior and negative magnetoresistance in an unusual charge-density-wave material EuTe4|Q. Q. Zhang,Y. Shi,K. Y. Zhai,W. X. Zhao,X. Du,J. S. Zhou,X. Gu,R. Z. Xu,Y. D. Li,Y. F. Guo,Z. K. Liu,C. Chen,S. -K. Mo,T. K. Kim,C. Cacho,J. W. Yu,W. Li,Y. L. Chen,Jiun-Haw Chu,L. X. Yang###
(824196, 824196)
 EuTe4 is a newly-discovered van der Waals material exhibiting a novelcharge-density wave (CD<missing VAR>W) with a large thermal hysteresis in the resistivityand CD<missing VAR>W gap.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 200, 'meV', 2],[137.0, 400, 'K', 2],[244.0, 7, 'T', 4]

C
###Thermal hysteretic behavior and negative magnetoresistance in an unusual charge-density-wave material EuTe4|Q. Q. Zhang,Y. Shi,K. Y. Zhai,W. X. Zhao,X. Du,J. S. Zhou,X. Gu,R. Z. Xu,Y. D. Li,Y. F. Guo,Z. K. Liu,C. Chen,S. -K. Mo,T. K. Kim,C. Cacho,J. W. Yu,W. Li,Y. L. Chen,Jiun-Haw Chu,L. X. Yang###
(824218, 824218)
 EuTe4 is a newly-discovered van der Waals material exhibiting a novelcharge-density wave (CD<missing VAR>W) with a large thermal hysteresis in the resistivityand CD<missing VAR>W gap.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 200, 'meV', 2],[115.0, 400, 'K', 2],[222.0, 7, 'T', 4]

W
###Thermal hysteretic behavior and negative magnetoresistance in an unusual charge-density-wave material EuTe4|Q. Q. Zhang,Y. Shi,K. Y. Zhai,W. X. Zhao,X. Du,J. S. Zhou,X. Gu,R. Z. Xu,Y. D. Li,Y. F. Guo,Z. K. Liu,C. Chen,S. -K. Mo,T. K. Kim,C. Cacho,J. W. Yu,W. Li,Y. L. Chen,Jiun-Haw Chu,L. X. Yang###
(824220, 824220)
 EuTe4 is a newly-discovered van der Waals material exhibiting a novelcharge-density wave (CD<missing VAR>W) with a large thermal hysteresis in the resistivityand CD<missing VAR>W gap.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 200, 'meV', 2],[113.0, 400, 'K', 2],[220.0, 7, 'T', 4]

In
###Thermal hysteretic behavior and negative magnetoresistance in an unusual charge-density-wave material EuTe4|Q. Q. Zhang,Y. Shi,K. Y. Zhai,W. X. Zhao,X. Du,J. S. Zhou,X. Gu,R. Z. Xu,Y. D. Li,Y. F. Guo,Z. K. Liu,C. Chen,S. -K. Mo,T. K. Kim,C. Cacho,J. W. Yu,W. Li,Y. L. Chen,Jiun-Haw Chu,L. X. Yang###
(824225, 824225)
 In this work, we systematically study the electronic structure andtransport properties of EuTe4 using high-resolution angle-resolvedphotoemission spectroscopy (ARPES), magnetoresistance measurements, andscanning tunneling microscopy (STM).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 200, 'meV', 1],[108.0, 400, 'K', 1],[215.0, 7, 'T', 3]

EuTe4
###Thermal hysteretic behavior and negative magnetoresistance in an unusual charge-density-wave material EuTe4|Q. Q. Zhang,Y. Shi,K. Y. Zhai,W. X. Zhao,X. Du,J. S. Zhou,X. Gu,R. Z. Xu,Y. D. Li,Y. F. Guo,Z. K. Liu,C. Chen,S. -K. Mo,T. K. Kim,C. Cacho,J. W. Yu,W. Li,Y. L. Chen,Jiun-Haw Chu,L. X. Yang###
(824253, 824255)
 In this work, we systematically study the electronic structure andtransport properties of EuTe4 using high-resolution angle-resolvedphotoemission spectroscopy (ARPES), magnetoresistance measurements, andscanning tunneling microscopy (STM).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 200, 'meV', 1],[78.0, 400, 'K', 1],[185.0, 7, 'T', 3]

S
###Thermal hysteretic behavior and negative magnetoresistance in an unusual charge-density-wave material EuTe4|Q. Q. Zhang,Y. Shi,K. Y. Zhai,W. X. Zhao,X. Du,J. S. Zhou,X. Gu,R. Z. Xu,Y. D. Li,Y. F. Guo,Z. K. Liu,C. Chen,S. -K. Mo,T. K. Kim,C. Cacho,J. W. Yu,W. Li,Y. L. Chen,Jiun-Haw Chu,L. X. Yang###
(824277, 824277)
 In this work, we systematically study the electronic structure andtransport properties of EuTe4 using high-resolution angle-resolvedphotoemission spectroscopy (ARPES), magnetoresistance measurements, andscanning tunneling microscopy (STM).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 200, 'meV', 1],[56.0, 400, 'K', 1],[163.0, 7, 'T', 3]

S
###Thermal hysteretic behavior and negative magnetoresistance in an unusual charge-density-wave material EuTe4|Q. Q. Zhang,Y. Shi,K. Y. Zhai,W. X. Zhao,X. Du,J. S. Zhou,X. Gu,R. Z. Xu,Y. D. Li,Y. F. Guo,Z. K. Liu,C. Chen,S. -K. Mo,T. K. Kim,C. Cacho,J. W. Yu,W. Li,Y. L. Chen,Jiun-Haw Chu,L. X. Yang###
(824296, 824296)
 In this work, we systematically study the electronic structure andtransport properties of EuTe4 using high-resolution angle-resolvedphotoemission spectroscopy (ARPES), magnetoresistance measurements, andscanning tunneling microscopy (STM).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 200, 'meV', 1],[37.0, 400, 'K', 1],[144.0, 7, 'T', 3]

C
###Thermal hysteretic behavior and negative magnetoresistance in an unusual charge-density-wave material EuTe4|Q. Q. Zhang,Y. Shi,K. Y. Zhai,W. X. Zhao,X. Du,J. S. Zhou,X. Gu,R. Z. Xu,Y. D. Li,Y. F. Guo,Z. K. Liu,C. Chen,S. -K. Mo,T. K. Kim,C. Cacho,J. W. Yu,W. Li,Y. L. Chen,Jiun-Haw Chu,L. X. Yang###
(824308, 824308)
 We observe a CD<missing VAR>W gap of about 200 meV atlow temperatures that persists up to 400 K, suggesting that the CD<missing VAR>W transitionoccurs at a much higher temperature.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 200, 'meV', 0],[25.0, 400, 'K', 0],[132.0, 7, 'T', 2]

W
###Thermal hysteretic behavior and negative magnetoresistance in an unusual charge-density-wave material EuTe4|Q. Q. Zhang,Y. Shi,K. Y. Zhai,W. X. Zhao,X. Du,J. S. Zhou,X. Gu,R. Z. Xu,Y. D. Li,Y. F. Guo,Z. K. Liu,C. Chen,S. -K. Mo,T. K. Kim,C. Cacho,J. W. Yu,W. Li,Y. L. Chen,Jiun-Haw Chu,L. X. Yang###
(824310, 824310)
 We observe a CD<missing VAR>W gap of about 200 meV atlow temperatures that persists up to 400 K, suggesting that the CD<missing VAR>W transitionoccurs at a much higher temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 200, 'meV', 0],[23.0, 400, 'K', 0],[130.0, 7, 'T', 2]

C
###Thermal hysteretic behavior and negative magnetoresistance in an unusual charge-density-wave material EuTe4|Q. Q. Zhang,Y. Shi,K. Y. Zhai,W. X. Zhao,X. Du,J. S. Zhou,X. Gu,R. Z. Xu,Y. D. Li,Y. F. Guo,Z. K. Liu,C. Chen,S. -K. Mo,T. K. Kim,C. Cacho,J. W. Yu,W. Li,Y. L. Chen,Jiun-Haw Chu,L. X. Yang###
(824342, 824342)
 We observe a CD<missing VAR>W gap of about 200 meV atlow temperatures that persists up to 400 K, suggesting that the CD<missing VAR>W transitionoccurs at a much higher temperature.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 200, 'meV', 0],[9.0, 400, 'K', 0],[98.0, 7, 'T', 2]

W
###Thermal hysteretic behavior and negative magnetoresistance in an unusual charge-density-wave material EuTe4|Q. Q. Zhang,Y. Shi,K. Y. Zhai,W. X. Zhao,X. Du,J. S. Zhou,X. Gu,R. Z. Xu,Y. D. Li,Y. F. Guo,Z. K. Liu,C. Chen,S. -K. Mo,T. K. Kim,C. Cacho,J. W. Yu,W. Li,Y. L. Chen,Jiun-Haw Chu,L. X. Yang###
(824344, 824344)
 We observe a CD<missing VAR>W gap of about 200 meV atlow temperatures that persists up to 400 K, suggesting that the CD<missing VAR>W transitionoccurs at a much higher temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 200, 'meV', 0],[11.0, 400, 'K', 0],[96.0, 7, 'T', 2]

S
###Thermal hysteretic behavior and negative magnetoresistance in an unusual charge-density-wave material EuTe4|Q. Q. Zhang,Y. Shi,K. Y. Zhai,W. X. Zhao,X. Du,J. S. Zhou,X. Gu,R. Z. Xu,Y. D. Li,Y. F. Guo,Z. K. Liu,C. Chen,S. -K. Mo,T. K. Kim,C. Cacho,J. W. Yu,W. Li,Y. L. Chen,Jiun-Haw Chu,L. X. Yang###
(824385, 824385)
 We observe a large thermal hystereticbehavior of the ARPES intensity near the Fermi level, consistent with theresistivity measurement.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 200, 'meV', 1],[52.0, 400, 'K', 1],[55.0, 7, 'T', 1]

S
###Thermal hysteretic behavior and negative magnetoresistance in an unusual charge-density-wave material EuTe4|Q. Q. Zhang,Y. Shi,K. Y. Zhai,W. X. Zhao,X. Du,J. S. Zhou,X. Gu,R. Z. Xu,Y. D. Li,Y. F. Guo,Z. K. Liu,C. Chen,S. -K. Mo,T. K. Kim,C. Cacho,J. W. Yu,W. Li,Y. L. Chen,Jiun-Haw Chu,L. X. Yang###
(824470, 824470)
 Instead, the surface topography measured with STM showssurface domains with different CD<missing VAR>W trimerization directions, which may beimportant for the thermal hysteretic behavior of EuTe4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 200, 'meV', 3],[137.0, 400, 'K', 3],[30.0, 7, 'T', 1]

C
###Thermal hysteretic behavior and negative magnetoresistance in an unusual charge-density-wave material EuTe4|Q. Q. Zhang,Y. Shi,K. Y. Zhai,W. X. Zhao,X. Du,J. S. Zhou,X. Gu,R. Z. Xu,Y. D. Li,Y. F. Guo,Z. K. Liu,C. Chen,S. -K. Mo,T. K. Kim,C. Cacho,J. W. Yu,W. Li,Y. L. Chen,Jiun-Haw Chu,L. X. Yang###
(824485, 824485)
 Instead, the surface topography measured with STM showssurface domains with different CD<missing VAR>W trimerization directions, which may beimportant for the thermal hysteretic behavior of EuTe4.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[168.0, 200, 'meV', 3],[152.0, 400, 'K', 3],[45.0, 7, 'T', 1]

W
###Thermal hysteretic behavior and negative magnetoresistance in an unusual charge-density-wave material EuTe4|Q. Q. Zhang,Y. Shi,K. Y. Zhai,W. X. Zhao,X. Du,J. S. Zhou,X. Gu,R. Z. Xu,Y. D. Li,Y. F. Guo,Z. K. Liu,C. Chen,S. -K. Mo,T. K. Kim,C. Cacho,J. W. Yu,W. Li,Y. L. Chen,Jiun-Haw Chu,L. X. Yang###
(824487, 824487)
 Instead, the surface topography measured with STM showssurface domains with different CD<missing VAR>W trimerization directions, which may beimportant for the thermal hysteretic behavior of EuTe4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[170.0, 200, 'meV', 3],[154.0, 400, 'K', 3],[47.0, 7, 'T', 1]

EuTe4
###Thermal hysteretic behavior and negative magnetoresistance in an unusual charge-density-wave material EuTe4|Q. Q. Zhang,Y. Shi,K. Y. Zhai,W. X. Zhao,X. Du,J. S. Zhou,X. Gu,R. Z. Xu,Y. D. Li,Y. F. Guo,Z. K. Liu,C. Chen,S. -K. Mo,T. K. Kim,C. Cacho,J. W. Yu,W. Li,Y. L. Chen,Jiun-Haw Chu,L. X. Yang###
(824515, 824517)
 Instead, the surface topography measured with STM showssurface domains with different CD<missing VAR>W trimerization directions, which may beimportant for the thermal hysteretic behavior of EuTe4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[198.0, 200, 'meV', 3],[182.0, 400, 'K', 3],[75.0, 7, 'T', 1]

Eu
###Thermal hysteretic behavior and negative magnetoresistance in an unusual charge-density-wave material EuTe4|Q. Q. Zhang,Y. Shi,K. Y. Zhai,W. X. Zhao,X. Du,J. S. Zhou,X. Gu,R. Z. Xu,Y. D. Li,Y. F. Guo,Z. K. Liu,C. Chen,S. -K. Mo,T. K. Kim,C. Cacho,J. W. Yu,W. Li,Y. L. Chen,Jiun-Haw Chu,L. X. Yang###
(824563, 824563)
 Interestingly, weobserve a large negative magnetoresistance at low temperatures that can beassociated with the canting of magnetically ordered Eu spins.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[246.0, 200, 'meV', 4],[230.0, 400, 'K', 4],[123.0, 7, 'T', 2]

EuTe4
###Thermal hysteretic behavior and negative magnetoresistance in an unusual charge-density-wave material EuTe4|Q. Q. Zhang,Y. Shi,K. Y. Zhai,W. X. Zhao,X. Du,J. S. Zhou,X. Gu,R. Z. Xu,Y. D. Li,Y. F. Guo,Z. K. Liu,C. Chen,S. -K. Mo,T. K. Kim,C. Cacho,J. W. Yu,W. Li,Y. L. Chen,Jiun-Haw Chu,L. X. Yang###
(824600, 824602)
 Our work shedlight on the understanding of magnetic, transport, and electronic properties ofEuTe4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[283.0, 200, 'meV', 5],[267.0, 400, 'K', 5],[160.0, 7, 'T', 3]

Mn2Au
###Tunneling magnetoresistance in Mn$_2$Au-based pure antiferromagnetic tunnel junction|Xingtao Jia,Hui-Min Tang,Shi-Zhuo Wan###
(824619, 824621)
Tunneling magnetoresistance in Mn2Au-based pure antiferromagnetic tunnel junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[296.0, 1000, '%', 6]

F
###Tunneling magnetoresistance in Mn$_2$Au-based pure antiferromagnetic tunnel junction|Xingtao Jia,Hui-Min Tang,Shi-Zhuo Wan###
(824638, 824638)
 Antiferromagnetic (AF) spintronics is merit on ultra-high operator speed andstability in the presence of magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[279.0, 1000, '%', 5]

F
###Tunneling magnetoresistance in Mn$_2$Au-based pure antiferromagnetic tunnel junction|Xingtao Jia,Hui-Min Tang,Shi-Zhuo Wan###
(824804, 824804)
 Achieving noticeable MReffect in the pure AF device is diffcult but essential for the AF spintronicapplications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 1000, '%', 2]

F
###Tunneling magnetoresistance in Mn$_2$Au-based pure antiferromagnetic tunnel junction|Xingtao Jia,Hui-Min Tang,Shi-Zhuo Wan###
(824821, 824821)
 Achieving noticeable MReffect in the pure AF device is diffcult but essential for the AF spintronicapplications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 1000, '%', 2]

Nb/Mn2Au/CdO/Mn2Au/Nb
###Tunneling magnetoresistance in Mn$_2$Au-based pure antiferromagnetic tunnel junction|Xingtao Jia,Hui-Min Tang,Shi-Zhuo Wan###
(824854, 824867)
 Here, we study the tunnel magnetoresistance(TMR) effect in theNb/Mn2Au/CdO/Mn2Au/Nb pure AF magnetic tunnel junctions (AF-MTJs) basedon a first-principle scattering theory.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[50.0, 1000, '%', 1]

F
###Tunneling magnetoresistance in Mn$_2$Au-based pure antiferromagnetic tunnel junction|Xingtao Jia,Hui-Min Tang,Shi-Zhuo Wan###
(824872, 824872)
 Here, we study the tunnel magnetoresistance(TMR) effect in theNb/Mn2Au/CdO/Mn2Au/Nb pure AF magnetic tunnel junctions (AF-MTJs) basedon a first-principle scattering theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 1000, '%', 1]

F
###Tunneling magnetoresistance in Mn$_2$Au-based pure antiferromagnetic tunnel junction|Xingtao Jia,Hui-Min Tang,Shi-Zhuo Wan###
(824882, 824882)
 Here, we study the tunnel magnetoresistance(TMR) effect in theNb/Mn2Au/CdO/Mn2Au/Nb pure AF magnetic tunnel junctions (AF-MTJs) basedon a first-principle scattering theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 1000, '%', 1]

CdO
###Tunneling magnetoresistance in Mn$_2$Au-based pure antiferromagnetic tunnel junction|Xingtao Jia,Hui-Min Tang,Shi-Zhuo Wan###
(824972, 824973)
 Giant TMRs with order of 1000% arepredicted in some symmetric junctions, which is originated from the interfacialresonance tunneling effect related with the k<missing VAR> dependent complex band structuresof CdO and Mn2Au in companion with the enhanced spin polarization of theinterfacial magnetic atoms.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 1000, '%', 0]

Mn2Au
###Tunneling magnetoresistance in Mn$_2$Au-based pure antiferromagnetic tunnel junction|Xingtao Jia,Hui-Min Tang,Shi-Zhuo Wan###
(824977, 824979)
 Giant TMRs with order of 1000% arepredicted in some symmetric junctions, which is originated from the interfacialresonance tunneling effect related with the k<missing VAR> dependent complex band structuresof CdO and Mn2Au in companion with the enhanced spin polarization of theinterfacial magnetic atoms.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 1000, '%', 0]

Mn2Au/CdO
###Tunneling magnetoresistance in Mn$_2$Au-based pure antiferromagnetic tunnel junction|Xingtao Jia,Hui-Min Tang,Shi-Zhuo Wan###
(825049, 825054)
 The effect of voltage bias and interfacial disordersuch as Oxygen vacancy, Manganese vacancy, and Manganese-Cadmium exchanges atMn2Au/CdO interfaces are studied also.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[132.0, 1000, '%', 1]

Nb/Mn2Au/CdO/Mn2Au/Nb
###Tunneling magnetoresistance in Mn$_2$Au-based pure antiferromagnetic tunnel junction|Xingtao Jia,Hui-Min Tang,Shi-Zhuo Wan###
(825072, 825085)
 Our studies suggestNb/Mn2Au/CdO/Mn2Au/Nb AFMTJs promising material for AF spintronicapplication, and rocksalt CdO a potential symmetry filtering material forspintronic applications.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[155.0, 1000, '%', 2]

F
###Tunneling magnetoresistance in Mn$_2$Au-based pure antiferromagnetic tunnel junction|Xingtao Jia,Hui-Min Tang,Shi-Zhuo Wan###
(825088, 825088)
 Our studies suggestNb/Mn2Au/CdO/Mn2Au/Nb AFMTJs promising material for AF spintronicapplication, and rocksalt CdO a potential symmetry filtering material forspintronic applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[171.0, 1000, '%', 2]

F
###Tunneling magnetoresistance in Mn$_2$Au-based pure antiferromagnetic tunnel junction|Xingtao Jia,Hui-Min Tang,Shi-Zhuo Wan###
(825100, 825100)
 Our studies suggestNb/Mn2Au/CdO/Mn2Au/Nb AFMTJs promising material for AF spintronicapplication, and rocksalt CdO a potential symmetry filtering material forspintronic applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[183.0, 1000, '%', 2]

CdO
###Tunneling magnetoresistance in Mn$_2$Au-based pure antiferromagnetic tunnel junction|Xingtao Jia,Hui-Min Tang,Shi-Zhuo Wan###
(825112, 825113)
 Our studies suggestNb/Mn2Au/CdO/Mn2Au/Nb AFMTJs promising material for AF spintronicapplication, and rocksalt CdO a potential symmetry filtering material forspintronic applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[195.0, 1000, '%', 2]

Mn
###Giant spin-valve effect and chiral anomaly in antiferromagnetic topological insulators Mn(Bi1-xSbx)2Te4|Seng Huat Lee,David Graf,Robert Robinson,John Singleton,Johanna C. Palmstrom,Zhiqiang Mao###
(825163, 825163)
Giant spin-valve effect and chiral anomaly in antiferromagnetic topological insulators Mn(Bi1-xSbx)2Te4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 35, 'T', 2]

Bi1-x
###Giant spin-valve effect and chiral anomaly in antiferromagnetic topological insulators Mn(Bi1-xSbx)2Te4|Seng Huat Lee,David Graf,Robert Robinson,John Singleton,Johanna C. Palmstrom,Zhiqiang Mao###
(825165, 825168)
Giant spin-valve effect and chiral anomaly in antiferromagnetic topological insulators Mn(Bi1-xSbx)2Te4.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[69.0, 35, 'T', 2]

Te4
###Giant spin-valve effect and chiral anomaly in antiferromagnetic topological insulators Mn(Bi1-xSbx)2Te4|Seng Huat Lee,David Graf,Robert Robinson,John Singleton,Johanna C. Palmstrom,Zhiqiang Mao###
(825172, 825173)
Giant spin-valve effect and chiral anomaly in antiferromagnetic topological insulators Mn(Bi1-xSbx)2Te4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 35, 'T', 2]

Mn
###Giant spin-valve effect and chiral anomaly in antiferromagnetic topological insulators Mn(Bi1-xSbx)2Te4|Seng Huat Lee,David Graf,Robert Robinson,John Singleton,Johanna C. Palmstrom,Zhiqiang Mao###
(825197, 825197)
 We report c<missing VAR>-axis transport studies on magnetic topological insulatorsMn(Bi1-xSbx)2Te4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 35, 'T', 1]

Bi1-x
###Giant spin-valve effect and chiral anomaly in antiferromagnetic topological insulators Mn(Bi1-xSbx)2Te4|Seng Huat Lee,David Graf,Robert Robinson,John Singleton,Johanna C. Palmstrom,Zhiqiang Mao###
(825199, 825202)
 We report c<missing VAR>-axis transport studies on magnetic topological insulatorsMn(Bi1-xSbx)2Te4.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[35.0, 35, 'T', 1]

Te4
###Giant spin-valve effect and chiral anomaly in antiferromagnetic topological insulators Mn(Bi1-xSbx)2Te4|Seng Huat Lee,David Graf,Robert Robinson,John Singleton,Johanna C. Palmstrom,Zhiqiang Mao###
(825206, 825207)
 We report c<missing VAR>-axis transport studies on magnetic topological insulatorsMn(Bi1-xSbx)2Te4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 35, 'T', 1]

MnBi2Te4
###Giant spin-valve effect and chiral anomaly in antiferromagnetic topological insulators Mn(Bi1-xSbx)2Te4|Seng Huat Lee,David Graf,Robert Robinson,John Singleton,Johanna C. Palmstrom,Zhiqiang Mao###
(825358, 825362)
 The electronic anisotropy is remarkably enhanced for thelightly hole-doped sample relative to pristine MnBi2Te4 but not for the lightlyelectron-doped sample.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 35, 'T', 2]

N
###Giant spin-valve effect and chiral anomaly in antiferromagnetic topological insulators Mn(Bi1-xSbx)2Te4|Seng Huat Lee,David Graf,Robert Robinson,John Singleton,Johanna C. Palmstrom,Zhiqiang Mao###
(825528, 825528)
 Furthermore, we find the large negative LMR of the lightlyhole-doped sample extends to a wide temperature range above the Neeltemperature (T<missing VAR>N) where the magnetoconductivity is proportional to B2.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[291.0, 35, 'T', 4]

N
###Giant spin-valve effect and chiral anomaly in antiferromagnetic topological insulators Mn(Bi1-xSbx)2Te4|Seng Huat Lee,David Graf,Robert Robinson,John Singleton,Johanna C. Palmstrom,Zhiqiang Mao###
(825536, 825536)
 Furthermore, we find the large negative LMR of the lightlyhole-doped sample extends to a wide temperature range above the Neeltemperature (T<missing VAR>N) where the magnetoconductivity is proportional to B2.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[299.0, 35, 'T', 4]

B2
###Giant spin-valve effect and chiral anomaly in antiferromagnetic topological insulators Mn(Bi1-xSbx)2Te4|Seng Huat Lee,David Graf,Robert Robinson,John Singleton,Johanna C. Palmstrom,Zhiqiang Mao###
(825551, 825552)
 Furthermore, we find the large negative LMR of the lightlyhole-doped sample extends to a wide temperature range above the Neeltemperature (T<missing VAR>N) where the magnetoconductivity is proportional to B2.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[314.0, 35, 'T', 4]

N
###Giant spin-valve effect and chiral anomaly in antiferromagnetic topological insulators Mn(Bi1-xSbx)2Te4|Seng Huat Lee,David Graf,Robert Robinson,John Singleton,Johanna C. Palmstrom,Zhiqiang Mao###
(825609, 825609)
 Thisfact, together with the short-range intralayer ferromagnetic correlationrevealed in isothermal magnetization measurements, suggests the possiblepresence of the Weyl state above T<missing VAR>N.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[372.0, 35, 'T', 5]

Mn
###Giant spin-valve effect and chiral anomaly in antiferromagnetic topological insulators Mn(Bi1-xSbx)2Te4|Seng Huat Lee,David Graf,Robert Robinson,John Singleton,Johanna C. Palmstrom,Zhiqiang Mao###
(825633, 825633)
 These results demonstrate that in thec<missing VAR>-axis magnetotransport of Mn(Bi1-xSbx)2Te4, the spin scattering is dominant inthe lightly electron-doped sample but overwhelmed by the chiral anomaly effectin the lightly hole-doped sample due to the presence of the Weyl state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[396.0, 35, 'T', 6]

Bi1-x
###Giant spin-valve effect and chiral anomaly in antiferromagnetic topological insulators Mn(Bi1-xSbx)2Te4|Seng Huat Lee,David Graf,Robert Robinson,John Singleton,Johanna C. Palmstrom,Zhiqiang Mao###
(825635, 825638)
 These results demonstrate that in thec<missing VAR>-axis magnetotransport of Mn(Bi1-xSbx)2Te4, the spin scattering is dominant inthe lightly electron-doped sample but overwhelmed by the chiral anomaly effectin the lightly hole-doped sample due to the presence of the Weyl state.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[398.0, 35, 'T', 6]

Te4
###Giant spin-valve effect and chiral anomaly in antiferromagnetic topological insulators Mn(Bi1-xSbx)2Te4|Seng Huat Lee,David Graf,Robert Robinson,John Singleton,Johanna C. Palmstrom,Zhiqiang Mao###
(825642, 825643)
 These results demonstrate that in thec<missing VAR>-axis magnetotransport of Mn(Bi1-xSbx)2Te4, the spin scattering is dominant inthe lightly electron-doped sample but overwhelmed by the chiral anomaly effectin the lightly hole-doped sample due to the presence of the Weyl state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[405.0, 35, 'T', 6]

Mn
###Giant spin-valve effect and chiral anomaly in antiferromagnetic topological insulators Mn(Bi1-xSbx)2Te4|Seng Huat Lee,David Graf,Robert Robinson,John Singleton,Johanna C. Palmstrom,Zhiqiang Mao###
(825735, 825735)
 Thesefindings extend the understanding of the transport properties ofMn(Bi1-xSbx)2Te4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[498.0, 35, 'T', 7]

Bi1-x
###Giant spin-valve effect and chiral anomaly in antiferromagnetic topological insulators Mn(Bi1-xSbx)2Te4|Seng Huat Lee,David Graf,Robert Robinson,John Singleton,Johanna C. Palmstrom,Zhiqiang Mao###
(825737, 825740)
 Thesefindings extend the understanding of the transport properties ofMn(Bi1-xSbx)2Te4.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[500.0, 35, 'T', 7]

Te4
###Giant spin-valve effect and chiral anomaly in antiferromagnetic topological insulators Mn(Bi1-xSbx)2Te4|Seng Huat Lee,David Graf,Robert Robinson,John Singleton,Johanna C. Palmstrom,Zhiqiang Mao###
(825744, 825745)
 Thesefindings extend the understanding of the transport properties ofMn(Bi1-xSbx)2Te4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[507.0, 35, 'T', 7]

PtAl
###Magnetic and transport anomalies and large magnetocaloric effect in cubic R4PtAl (R = Ho and Er)|Kartik K. Iyer,Sudhindra Rayaprol,Ram Kumar,Shidaling Matteppanavar,Suneel Dodamani,Kalobaran Maiti,Echur V. Sampathkumaran###
(825778, 825779)
Magnetic and transport anomalies and large magnetocaloric effect in cubic R<missing VAR>4PtAl (R<missing VAR>  Ho and Er).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 3, 'sites', 1],[107.0, 19, 'K', 2],[110.0, 12, 'K', 2],[153.0, 5, 'K', 3],[238.0, 4, 'f', 4],[294.0, 10, 'kOe', 5],[350.0, 50, 'kOe', 6],[362.0, 14.5, 'J', 6],[377.0, 21.5, 'J', 6],[401.0, 4, 'f', 6]

Ho
###Magnetic and transport anomalies and large magnetocaloric effect in cubic R4PtAl (R = Ho and Er)|Kartik K. Iyer,Sudhindra Rayaprol,Ram Kumar,Shidaling Matteppanavar,Suneel Dodamani,Kalobaran Maiti,Echur V. Sampathkumaran###
(825785, 825785)
Magnetic and transport anomalies and large magnetocaloric effect in cubic R<missing VAR>4PtAl (R<missing VAR>  Ho and Er).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 3, 'sites', 1],[101.0, 19, 'K', 2],[104.0, 12, 'K', 2],[147.0, 5, 'K', 3],[232.0, 4, 'f', 4],[288.0, 10, 'kOe', 5],[344.0, 50, 'kOe', 6],[356.0, 14.5, 'J', 6],[371.0, 21.5, 'J', 6],[395.0, 4, 'f', 6]

Er
###Magnetic and transport anomalies and large magnetocaloric effect in cubic R4PtAl (R = Ho and Er)|Kartik K. Iyer,Sudhindra Rayaprol,Ram Kumar,Shidaling Matteppanavar,Suneel Dodamani,Kalobaran Maiti,Echur V. Sampathkumaran###
(825789, 825789)
Magnetic and transport anomalies and large magnetocaloric effect in cubic R<missing VAR>4PtAl (R<missing VAR>  Ho and Er).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 3, 'sites', 1],[97.0, 19, 'K', 2],[100.0, 12, 'K', 2],[143.0, 5, 'K', 3],[228.0, 4, 'f', 4],[284.0, 10, 'kOe', 5],[340.0, 50, 'kOe', 6],[352.0, 14.5, 'J', 6],[367.0, 21.5, 'J', 6],[391.0, 4, 'f', 6]

PtAl
###Magnetic and transport anomalies and large magnetocaloric effect in cubic R4PtAl (R = Ho and Er)|Kartik K. Iyer,Sudhindra Rayaprol,Ram Kumar,Shidaling Matteppanavar,Suneel Dodamani,Kalobaran Maiti,Echur V. Sampathkumaran###
(825807, 825808)
 We report the electronic properties of R<missing VAR>4PtAl (R<missing VAR>  Ho, and Er), whichcontains 3 sites for R<missing VAR>, by the measurements of magnetization (ac and dc),heat-capacity, transport, and magnetoresistance (MR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 3, 'sites', 0],[78.0, 19, 'K', 1],[81.0, 12, 'K', 1],[124.0, 5, 'K', 2],[209.0, 4, 'f', 3],[265.0, 10, 'kOe', 4],[321.0, 50, 'kOe', 5],[333.0, 14.5, 'J', 5],[348.0, 21.5, 'J', 5],[372.0, 4, 'f', 5]

Ho
###Magnetic and transport anomalies and large magnetocaloric effect in cubic R4PtAl (R = Ho and Er)|Kartik K. Iyer,Sudhindra Rayaprol,Ram Kumar,Shidaling Matteppanavar,Suneel Dodamani,Kalobaran Maiti,Echur V. Sampathkumaran###
(825814, 825814)
 We report the electronic properties of R<missing VAR>4PtAl (R<missing VAR>  Ho, and Er), whichcontains 3 sites for R<missing VAR>, by the measurements of magnetization (ac and dc),heat-capacity, transport, and magnetoresistance (MR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 3, 'sites', 0],[72.0, 19, 'K', 1],[75.0, 12, 'K', 1],[118.0, 5, 'K', 2],[203.0, 4, 'f', 3],[259.0, 10, 'kOe', 4],[315.0, 50, 'kOe', 5],[327.0, 14.5, 'J', 5],[342.0, 21.5, 'J', 5],[366.0, 4, 'f', 5]

Er
###Magnetic and transport anomalies and large magnetocaloric effect in cubic R4PtAl (R = Ho and Er)|Kartik K. Iyer,Sudhindra Rayaprol,Ram Kumar,Shidaling Matteppanavar,Suneel Dodamani,Kalobaran Maiti,Echur V. Sampathkumaran###
(825819, 825819)
 We report the electronic properties of R<missing VAR>4PtAl (R<missing VAR>  Ho, and Er), whichcontains 3 sites for R<missing VAR>, by the measurements of magnetization (ac and dc),heat-capacity, transport, and magnetoresistance (MR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 3, 'sites', 0],[67.0, 19, 'K', 1],[70.0, 12, 'K', 1],[113.0, 5, 'K', 2],[198.0, 4, 'f', 3],[254.0, 10, 'kOe', 4],[310.0, 50, 'kOe', 5],[322.0, 14.5, 'J', 5],[337.0, 21.5, 'J', 5],[361.0, 4, 'f', 5]

Ho
###Magnetic and transport anomalies and large magnetocaloric effect in cubic R4PtAl (R = Ho and Er)|Kartik K. Iyer,Sudhindra Rayaprol,Ram Kumar,Shidaling Matteppanavar,Suneel Dodamani,Kalobaran Maiti,Echur V. Sampathkumaran###
(825893, 825893)
 Dc magnetization datareveal antiferromagnetic order below 19 K and 12 K in Ho and Er compounds,respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 3, 'sites', 1],[7.0, 19, 'K', 0],[4.0, 12, 'K', 0],[39.0, 5, 'K', 1],[124.0, 4, 'f', 2],[180.0, 10, 'kOe', 3],[236.0, 50, 'kOe', 4],[248.0, 14.5, 'J', 4],[263.0, 21.5, 'J', 4],[287.0, 4, 'f', 4]

Er
###Magnetic and transport anomalies and large magnetocaloric effect in cubic R4PtAl (R = Ho and Er)|Kartik K. Iyer,Sudhindra Rayaprol,Ram Kumar,Shidaling Matteppanavar,Suneel Dodamani,Kalobaran Maiti,Echur V. Sampathkumaran###
(825897, 825897)
 Dc magnetization datareveal antiferromagnetic order below 19 K and 12 K in Ho and Er compounds,respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 3, 'sites', 1],[11.0, 19, 'K', 0],[8.0, 12, 'K', 0],[35.0, 5, 'K', 1],[120.0, 4, 'f', 2],[176.0, 10, 'kOe', 3],[232.0, 50, 'kOe', 4],[244.0, 14.5, 'J', 4],[259.0, 21.5, 'J', 4],[283.0, 4, 'f', 4]

K
###Magnetic and transport anomalies and large magnetocaloric effect in cubic R4PtAl (R = Ho and Er)|Kartik K. Iyer,Sudhindra Rayaprol,Ram Kumar,Shidaling Matteppanavar,Suneel Dodamani,Kalobaran Maiti,Echur V. Sampathkumaran###
(825921, 825921)
 Additional features observed at lower temperatures (12 K forHo4PtAl and 5 K for Er4PtAl) are akin to cluster spin-glass phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 3, 'sites', 2],[35.0, 19, 'K', 1],[32.0, 12, 'K', 1],[11.0, 5, 'K', 0],[96.0, 4, 'f', 1],[152.0, 10, 'kOe', 2],[208.0, 50, 'kOe', 3],[220.0, 14.5, 'J', 3],[235.0, 21.5, 'J', 3],[259.0, 4, 'f', 3]

Ho4PtAl
###Magnetic and transport anomalies and large magnetocaloric effect in cubic R4PtAl (R = Ho and Er)|Kartik K. Iyer,Sudhindra Rayaprol,Ram Kumar,Shidaling Matteppanavar,Suneel Dodamani,Kalobaran Maiti,Echur V. Sampathkumaran###
(825926, 825929)
 Additional features observed at lower temperatures (12 K forHo4PtAl and 5 K for Er4PtAl) are akin to cluster spin-glass phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 3, 'sites', 2],[40.0, 19, 'K', 1],[37.0, 12, 'K', 1],[3.0, 5, 'K', 0],[88.0, 4, 'f', 1],[144.0, 10, 'kOe', 2],[200.0, 50, 'kOe', 3],[212.0, 14.5, 'J', 3],[227.0, 21.5, 'J', 3],[251.0, 4, 'f', 3]

Al
###Magnetic and transport anomalies and large magnetocaloric effect in cubic R4PtAl (R = Ho and Er)|Kartik K. Iyer,Sudhindra Rayaprol,Ram Kumar,Shidaling Matteppanavar,Suneel Dodamani,Kalobaran Maiti,Echur V. Sampathkumaran###
(825939, 825939)
 Additional features observed at lower temperatures (12 K forHo4PtAl and 5 K for Er4PtAl) are akin to cluster spin-glass phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 3, 'sites', 2],[53.0, 19, 'K', 1],[50.0, 12, 'K', 1],[7.0, 5, 'K', 0],[78.0, 4, 'f', 1],[134.0, 10, 'kOe', 2],[190.0, 50, 'kOe', 3],[202.0, 14.5, 'J', 3],[217.0, 21.5, 'J', 3],[241.0, 4, 'f', 3]

N
###Magnetic and transport anomalies and large magnetocaloric effect in cubic R4PtAl (R = Ho and Er)|Kartik K. Iyer,Sudhindra Rayaprol,Ram Kumar,Shidaling Matteppanavar,Suneel Dodamani,Kalobaran Maiti,Echur V. Sampathkumaran###
(825987, 825987)
 Resistivitydata exhibit a weak minimum at a temperature marginally higher than theirrespective Neel temperature (T<missing VAR>N) which is unusual for such rare-earths withwell localized 4f states.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 3, 'sites', 3],[101.0, 19, 'K', 2],[98.0, 12, 'K', 2],[55.0, 5, 'K', 1],[30.0, 4, 'f', 0],[86.0, 10, 'kOe', 1],[142.0, 50, 'kOe', 2],[154.0, 14.5, 'J', 2],[169.0, 21.5, 'J', 2],[193.0, 4, 'f', 2]

N
###Magnetic and transport anomalies and large magnetocaloric effect in cubic R4PtAl (R = Ho and Er)|Kartik K. Iyer,Sudhindra Rayaprol,Ram Kumar,Shidaling Matteppanavar,Suneel Dodamani,Kalobaran Maiti,Echur V. Sampathkumaran###
(825994, 825994)
 Resistivitydata exhibit a weak minimum at a temperature marginally higher than theirrespective Neel temperature (T<missing VAR>N) which is unusual for such rare-earths withwell localized 4f states.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 3, 'sites', 3],[108.0, 19, 'K', 2],[105.0, 12, 'K', 2],[62.0, 5, 'K', 1],[23.0, 4, 'f', 0],[79.0, 10, 'kOe', 1],[135.0, 50, 'kOe', 2],[147.0, 14.5, 'J', 2],[162.0, 21.5, 'J', 2],[186.0, 4, 'f', 2]

N
###Magnetic and transport anomalies and large magnetocaloric effect in cubic R4PtAl (R = Ho and Er)|Kartik K. Iyer,Sudhindra Rayaprol,Ram Kumar,Shidaling Matteppanavar,Suneel Dodamani,Kalobaran Maiti,Echur V. Sampathkumaran###
(826038, 826038)
 Isothermal magnetization and magnetoresistance datawell below T<missing VAR>N exhibit signatures of a subtle field-induced magnetic transitionfor a small magnetic field (less than 10 kOe).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[211.0, 3, 'sites', 4],[152.0, 19, 'K', 3],[149.0, 12, 'K', 3],[106.0, 5, 'K', 2],[21.0, 4, 'f', 1],[35.0, 10, 'kOe', 0],[91.0, 50, 'kOe', 1],[103.0, 14.5, 'J', 1],[118.0, 21.5, 'J', 1],[142.0, 4, 'f', 1]

N
###Magnetic and transport anomalies and large magnetocaloric effect in cubic R4PtAl (R = Ho and Er)|Kartik K. Iyer,Sudhindra Rayaprol,Ram Kumar,Shidaling Matteppanavar,Suneel Dodamani,Kalobaran Maiti,Echur V. Sampathkumaran###
(826092, 826092)
 Notably, the isothermal entropychange at T<missing VAR>N has the largest peak value within this rare-earth family; for afield change from zero to 50 kOe, the entropy change is about 14.5 J/kg K(Ho4PtAl) and 21.5 J/kg K (Er4PtAl) suggesting a role of anisotropy of 4forbital in determining this large value.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[265.0, 3, 'sites', 5],[206.0, 19, 'K', 4],[203.0, 12, 'K', 4],[160.0, 5, 'K', 3],[75.0, 4, 'f', 2],[19.0, 10, 'kOe', 1],[37.0, 50, 'kOe', 0],[49.0, 14.5, 'J', 0],[64.0, 21.5, 'J', 0],[88.0, 4, 'f', 0]

K
###Magnetic and transport anomalies and large magnetocaloric effect in cubic R4PtAl (R = Ho and Er)|Kartik K. Iyer,Sudhindra Rayaprol,Ram Kumar,Shidaling Matteppanavar,Suneel Dodamani,Kalobaran Maiti,Echur V. Sampathkumaran###
(826145, 826145)
 Notably, the isothermal entropychange at T<missing VAR>N has the largest peak value within this rare-earth family; for afield change from zero to 50 kOe, the entropy change is about 14.5 J/kg K(Ho4PtAl) and 21.5 J/kg K (Er4PtAl) suggesting a role of anisotropy of 4forbital in determining this large value.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[318.0, 3, 'sites', 5],[259.0, 19, 'K', 4],[256.0, 12, 'K', 4],[213.0, 5, 'K', 3],[128.0, 4, 'f', 2],[72.0, 10, 'kOe', 1],[16.0, 50, 'kOe', 0],[4.0, 14.5, 'J', 0],[11.0, 21.5, 'J', 0],[35.0, 4, 'f', 0]

(Ho4PtAl)
###Magnetic and transport anomalies and large magnetocaloric effect in cubic R4PtAl (R = Ho and Er)|Kartik K. Iyer,Sudhindra Rayaprol,Ram Kumar,Shidaling Matteppanavar,Suneel Dodamani,Kalobaran Maiti,Echur V. Sampathkumaran###
(826148, 826153)
 Notably, the isothermal entropychange at T<missing VAR>N has the largest peak value within this rare-earth family; for afield change from zero to 50 kOe, the entropy change is about 14.5 J/kg K(Ho4PtAl) and 21.5 J/kg K (Er4PtAl) suggesting a role of anisotropy of 4forbital in determining this large value.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[321.0, 3, 'sites', 5],[262.0, 19, 'K', 4],[259.0, 12, 'K', 4],[216.0, 5, 'K', 3],[131.0, 4, 'f', 2],[75.0, 10, 'kOe', 1],[19.0, 50, 'kOe', 0],[7.0, 14.5, 'J', 0],[3.0, 21.5, 'J', 0],[27.0, 4, 'f', 0]

K
###Magnetic and transport anomalies and large magnetocaloric effect in cubic R4PtAl (R = Ho and Er)|Kartik K. Iyer,Sudhindra Rayaprol,Ram Kumar,Shidaling Matteppanavar,Suneel Dodamani,Kalobaran Maiti,Echur V. Sampathkumaran###
(826160, 826160)
 Notably, the isothermal entropychange at T<missing VAR>N has the largest peak value within this rare-earth family; for afield change from zero to 50 kOe, the entropy change is about 14.5 J/kg K(Ho4PtAl) and 21.5 J/kg K (Er4PtAl) suggesting a role of anisotropy of 4forbital in determining this large value.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[333.0, 3, 'sites', 5],[274.0, 19, 'K', 4],[271.0, 12, 'K', 4],[228.0, 5, 'K', 3],[143.0, 4, 'f', 2],[87.0, 10, 'kOe', 1],[31.0, 50, 'kOe', 0],[19.0, 14.5, 'J', 0],[4.0, 21.5, 'J', 0],[20.0, 4, 'f', 0]

(Er4PtAl)
###Magnetic and transport anomalies and large magnetocaloric effect in cubic R4PtAl (R = Ho and Er)|Kartik K. Iyer,Sudhindra Rayaprol,Ram Kumar,Shidaling Matteppanavar,Suneel Dodamani,Kalobaran Maiti,Echur V. Sampathkumaran###
(826162, 826167)
 Notably, the isothermal entropychange at T<missing VAR>N has the largest peak value within this rare-earth family; for afield change from zero to 50 kOe, the entropy change is about 14.5 J/kg K(Ho4PtAl) and 21.5 J/kg K (Er4PtAl) suggesting a role of anisotropy of 4forbital in determining this large value.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[335.0, 3, 'sites', 5],[276.0, 19, 'K', 4],[273.0, 12, 'K', 4],[230.0, 5, 'K', 3],[145.0, 4, 'f', 2],[89.0, 10, 'kOe', 1],[33.0, 50, 'kOe', 0],[21.0, 14.5, 'J', 0],[6.0, 21.5, 'J', 0],[13.0, 4, 'f', 0]

Er4PtAl
###Magnetic and transport anomalies and large magnetocaloric effect in cubic R4PtAl (R = Ho and Er)|Kartik K. Iyer,Sudhindra Rayaprol,Ram Kumar,Shidaling Matteppanavar,Suneel Dodamani,Kalobaran Maiti,Echur V. Sampathkumaran###
(826235, 826238)
 The magnetocaloric propertyof Er4PtAl is nonhysteretic meeting a challenge to find materials withreversible magnetocaloric effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[408.0, 3, 'sites', 7],[349.0, 19, 'K', 6],[346.0, 12, 'K', 6],[303.0, 5, 'K', 5],[218.0, 4, 'f', 4],[162.0, 10, 'kOe', 3],[106.0, 50, 'kOe', 2],[94.0, 14.5, 'J', 2],[79.0, 21.5, 'J', 2],[55.0, 4, 'f', 2]

Pt3Tl2
###Double-layer Kagome Metals Pt3Tl2 and Pt3In2|Michael A. McGuire,Eleanor M. Clements,Qiang Zhang,Satoshi Okamoto###
(826282, 826285)
Double-layer Kagome Metals Pt3Tl2 and Pt3In2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[365.0, 5, 'd', 5]

Pt3In2
###Double-layer Kagome Metals Pt3Tl2 and Pt3In2|Michael A. McGuire,Eleanor M. Clements,Qiang Zhang,Satoshi Okamoto###
(826289, 826292)
Double-layer Kagome Metals Pt3Tl2 and Pt3In2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[358.0, 5, 'd', 5]

Pt3
###Double-layer Kagome Metals Pt3Tl2 and Pt3In2|Michael A. McGuire,Eleanor M. Clements,Qiang Zhang,Satoshi Okamoto###
(826354, 826355)
 Here we report the properties of Pt3X<missing VAR>2 (X<missing VAR>  In and Tl) thatadopt a double-layer kagome net structure related to that of the topologicallynontrivial high temperature ferromagnet Fe3Sn2 and the density wave hostingcompound V3Sb2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[295.0, 5, 'd', 3]

In
###Double-layer Kagome Metals Pt3Tl2 and Pt3In2|Michael A. McGuire,Eleanor M. Clements,Qiang Zhang,Satoshi Okamoto###
(826363, 826363)
 Here we report the properties of Pt3X<missing VAR>2 (X<missing VAR>  In and Tl) thatadopt a double-layer kagome net structure related to that of the topologicallynontrivial high temperature ferromagnet Fe3Sn2 and the density wave hostingcompound V3Sb2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[287.0, 5, 'd', 3]

Tl
###Double-layer Kagome Metals Pt3Tl2 and Pt3In2|Michael A. McGuire,Eleanor M. Clements,Qiang Zhang,Satoshi Okamoto###
(826367, 826367)
 Here we report the properties of Pt3X<missing VAR>2 (X<missing VAR>  In and Tl) thatadopt a double-layer kagome net structure related to that of the topologicallynontrivial high temperature ferromagnet Fe3Sn2 and the density wave hostingcompound V3Sb2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[283.0, 5, 'd', 3]

Fe3Sn2
###Double-layer Kagome Metals Pt3Tl2 and Pt3In2|Michael A. McGuire,Eleanor M. Clements,Qiang Zhang,Satoshi Okamoto###
(826408, 826411)
 Here we report the properties of Pt3X<missing VAR>2 (X<missing VAR>  In and Tl) thatadopt a double-layer kagome net structure related to that of the topologicallynontrivial high temperature ferromagnet Fe3Sn2 and the density wave hostingcompound V3Sb2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[239.0, 5, 'd', 3]

V3Sb2
###Double-layer Kagome Metals Pt3Tl2 and Pt3In2|Michael A. McGuire,Eleanor M. Clements,Qiang Zhang,Satoshi Okamoto###
(826426, 826429)
 Here we report the properties of Pt3X<missing VAR>2 (X<missing VAR>  In and Tl) thatadopt a double-layer kagome net structure related to that of the topologicallynontrivial high temperature ferromagnet Fe3Sn2 and the density wave hostingcompound V3Sb2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[221.0, 5, 'd', 3]

Pt3Tl2
###Double-layer Kagome Metals Pt3Tl2 and Pt3In2|Michael A. McGuire,Eleanor M. Clements,Qiang Zhang,Satoshi Okamoto###
(826453, 826456)
 We examined the structural and physical properties of singlecrystal Pt3Tl2 and polycrystalline Pt3In2 using x<missing VAR>-ray and neutron diffraction,magnetic susceptibility, heat capacity, and electrical transport measurements,along with density functional theory calculations of the electronic structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[194.0, 5, 'd', 2]

Pt3In2
###Double-layer Kagome Metals Pt3Tl2 and Pt3In2|Michael A. McGuire,Eleanor M. Clements,Qiang Zhang,Satoshi Okamoto###
(826462, 826465)
 We examined the structural and physical properties of singlecrystal Pt3Tl2 and polycrystalline Pt3In2 using x<missing VAR>-ray and neutron diffraction,magnetic susceptibility, heat capacity, and electrical transport measurements,along with density functional theory calculations of the electronic structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[185.0, 5, 'd', 2]

Pt
###Double-layer Kagome Metals Pt3Tl2 and Pt3In2|Michael A. McGuire,Eleanor M. Clements,Qiang Zhang,Satoshi Okamoto###
(826649, 826649)
While electronic dispersions characteristic of simple kagome nets withnearest-neighbor hopping are not clearly seen, likely due to the extendednature of the Pt 5d states, we do observe moderately large and non-saturatingmagnetoresistance values and quantum oscillations in the magnetoresistance andmagnetization associated with the kagome nets of Pt.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[1.0, 5, 'd', 0]

Pt
###Double-layer Kagome Metals Pt3Tl2 and Pt3In2|Michael A. McGuire,Eleanor M. Clements,Qiang Zhang,Satoshi Okamoto###
(826705, 826705)
While electronic dispersions characteristic of simple kagome nets withnearest-neighbor hopping are not clearly seen, likely due to the extendednature of the Pt 5d states, we do observe moderately large and non-saturatingmagnetoresistance values and quantum oscillations in the magnetoresistance andmagnetization associated with the kagome nets of Pt.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 5, 'd', 0]

GaAs/AlGaAs
###Electron focusing, mode spectroscopy and mass enhancement in small GaAs/AlGaAs rings|J Liu,K Ismail,KY Lee,JM Hong,S Washburn###
(826735, 826740)
Electron focusing, mode spectroscopy and mass enhancement in small GaAs/AlGaAs rings.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[185.0, 50, ',', 5]

GaAs/AlGaAs
###Electron focusing, mode spectroscopy and mass enhancement in small GaAs/AlGaAs rings|J Liu,K Ismail,KY Lee,JM Hong,S Washburn###
(826772, 826777)
 A new electron focusing effect has been discovered in small single andcoupled GaAs/AlGaAs rings.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[148.0, 50, ',', 4]

In
###Negative hopping magnetoresistance of two-dimensional electron gas in a smooth random potential|M. E. Raikh,L. I. Glazman###
(827484, 827484)
In the common case, when the barrier between two lakes is much narrower thantheir size, the characteristic magnetic field is determined by the area of thelakes, and thus may be quite small.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La(1-x)Ca
###Fermi Liquid - Non-Fermi Liquid Transition in the Double Exchange Model|Sanjoy K. Sarker###
(827644, 827650)
 Motivated by recent discovery of colossal magnetoresistance inLa(1-x)Cax<missing VAR>MnO3 and other manganites, we have studied the doubleexchange model.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

MnO3
###Fermi Liquid - Non-Fermi Liquid Transition in the Double Exchange Model|Sanjoy K. Sarker###
(827652, 827654)
 Motivated by recent discovery of colossal magnetoresistance inLa(1-x)Cax<missing VAR>MnO3 and other manganites, we have studied the doubleexchange model.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Fermi Liquid - Non-Fermi Liquid Transition in the Double Exchange Model|Sanjoy K. Sarker###
(827757, 827757)
 As a result, the electron becomes a composite object and itsGreens<missing VAR> function exhibits a two-fluid character a coherent Fermi-liquidcomponent associated with the ferromagnetically ordered core spins, and anon-Fermi liquid component associated with the disordered spins.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Fermi Liquid - Non-Fermi Liquid Transition in the Double Exchange Model|Sanjoy K. Sarker###
(827905, 827905)
 In an applied field spectral weight is transferred from thenon-Fermi liquid to the component.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Unusual beats of the perpendicular-current giant magneto-resistance and thermopower of magnetic trilayers|S. Krompiewski,U. Krey###
(828018, 828018)
 Oscillations of the giant magnetoresistance (GMR) and thermo-electric power(TEP) vs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(CPP)
###Unusual beats of the perpendicular-current giant magneto-resistance and thermopower of magnetic trilayers|S. Krompiewski,U. Krey###
(828071, 828075)
 both the thickness of the non-magnetic spacer and also that of theferromagnetic slabs are studied in the current-perpendicular-to-plane (CPP)geometry of magnetic trilayer systems, in terms of a single-band tight-bindingmodel without impurities.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Unusual beats of the perpendicular-current giant magneto-resistance and thermopower of magnetic trilayers|S. Krompiewski,U. Krey###
(828177, 828177)
 Additionally the TEP is obtained directlyfrom Motts<missing VAR> formula.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Unusual beats of the perpendicular-current giant magneto-resistance and thermopower of magnetic trilayers|S. Krompiewski,U. Krey###
(828194, 828194)
 In general, the thickness oscillations of the GMR and theTEP may have just one or two (short and long) oscillations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Unusual beats of the perpendicular-current giant magneto-resistance and thermopower of magnetic trilayers|S. Krompiewski,U. Krey###
(828220, 828220)
 In general, the thickness oscillations of the GMR and theTEP may have just one or two (short and long) oscillations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

KKY
###Unusual beats of the perpendicular-current giant magneto-resistance and thermopower of magnetic trilayers|S. Krompiewski,U. Krey###
(828271, 828273)
 The long period,related to spectacular beats, is apparently of non-R<missing VAR>KKY type.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Unusual beats of the perpendicular-current giant magneto-resistance and thermopower of magnetic trilayers|S. Krompiewski,U. Krey###
(828282, 828282)
 The TEPoscillations are strongly enhanced with respect to those of the GMR, have thesame periods, but different phases and a negative bias.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(CIP)
###Calculation of Giant Magnetoresistance in Laterally Confined Multilayers|Kingshuk Majumdar,Jian Chen,Selman Hershfield###
(828422, 828426)
, layers of wires, using the classical Boltzmann equation inthe current-in-plane (CIP) geometry.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Positive Magneto-Resistance in Quasi-1D Conductors|Ivar Martin,Philip Phillips###
(828731, 828731)
 At high temperatures weargue that transport is governed by inelastic scattering whereas at lowtemperatures the conductance decays exponentially with the electron dephasinglength.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I3
###Positive Magneto-Resistance in Quasi-1D Conductors|Ivar Martin,Philip Phillips###
(828856, 828857)
 This model is shown tobe in quantitative agreement with the organic conductor TTT2I3-delta.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Positive Magneto-Resistance in Quasi-1D Conductors|Ivar Martin,Philip Phillips###
(828901, 828901)
Within this model, we also show that on the insulating side, the positivemagnetoresistance of the form (H/T)2 observed in TTT2I3-delta andother quasi-1D<missing VAR> conductors can be explained by the role spin-flip scatteringplays in the electron dephasing rate.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I3
###Positive Magneto-Resistance in Quasi-1D Conductors|Ivar Martin,Philip Phillips###
(828915, 828916)
Within this model, we also show that on the insulating side, the positivemagnetoresistance of the form (H/T)2 observed in TTT2I3-delta andother quasi-1D<missing VAR> conductors can be explained by the role spin-flip scatteringplays in the electron dephasing rate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Coulomb effects on the quantum transport of a two-dimensional electron system in periodic electric and magnetic fields|Andrei Manolescu,Rolf R. Gerhardts###
(829113, 829113)
 The influence of the spin splitting of the Landau bands and of thedensity of states (D<missing VAR>OS) on the internal structure of the Shubnikov-de Haasoscillations is analyzed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OS
###Coulomb effects on the quantum transport of a two-dimensional electron system in periodic electric and magnetic fields|Andrei Manolescu,Rolf R. Gerhardts###
(829219, 829220)
 The Coulomb electron - electron interaction isresponsible for strong screening and exchange effects and is taken into accountin a screened Hartree-Fock approximation, in which the exchange contribution iscalculated self-consistently with the D<missing VAR>OS at the Fermi level.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###The Role of Density of States Fluctuations in the Normal State Properties of High Tc Superconductors|A. A. Varlamov,G. Balestrino,E. Milani,D. V. Livanov###
(829341, 829341)
The Role of Density of States Fluctuations in the Normal State Properties of High Tc Superconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###The Role of Density of States Fluctuations in the Normal State Properties of High Tc Superconductors|A. A. Varlamov,G. Balestrino,E. Milani,D. V. Livanov###
(829346, 829346)
 HT<missing VAR>S show many puzzling anomalies in their normal state properties.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###The Role of Density of States Fluctuations in the Normal State Properties of High Tc Superconductors|A. A. Varlamov,G. Balestrino,E. Milani,D. V. Livanov###
(829348, 829348)
 HT<missing VAR>S show many puzzling anomalies in their normal state properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###The Role of Density of States Fluctuations in the Normal State Properties of High Tc Superconductors|A. A. Varlamov,G. Balestrino,E. Milani,D. V. Livanov###
(829433, 829433)
 Among themare  - the presence of a peak in the c<missing VAR>-axis resistance and its growth in externalmagnetic field  - the anomalous negative magnetoresistance observed above Tc  - the deviation from the Korringa law in the temperature dependence of theNMR relaxation rate  - the opening of a large pseudo-gap in the c<missing VAR>-axis optical conductivity wellabove Tc  - the gap-like tunneling anomalies observed above Tc  - the anomalies in the thermoelectric power above Tc  We show how all these effects can be explained by the enhanced role played inquasi-2D<missing VAR> systems by the fluctuation decrease of the one-electron density ofstates (D<missing VAR>OS) at the Fermi level, and its competition with other fluctuationcontributions (AL<missing VAR>, MT).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###The Role of Density of States Fluctuations in the Normal State Properties of High Tc Superconductors|A. A. Varlamov,G. Balestrino,E. Milani,D. V. Livanov###
(829465, 829465)
 Among themare  - the presence of a peak in the c<missing VAR>-axis resistance and its growth in externalmagnetic field  - the anomalous negative magnetoresistance observed above Tc  - the deviation from the Korringa law in the temperature dependence of theNMR relaxation rate  - the opening of a large pseudo-gap in the c<missing VAR>-axis optical conductivity wellabove Tc  - the gap-like tunneling anomalies observed above Tc  - the anomalies in the thermoelectric power above Tc  We show how all these effects can be explained by the enhanced role played inquasi-2D<missing VAR> systems by the fluctuation decrease of the one-electron density ofstates (D<missing VAR>OS) at the Fermi level, and its competition with other fluctuationcontributions (AL<missing VAR>, MT).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###The Role of Density of States Fluctuations in the Normal State Properties of High Tc Superconductors|A. A. Varlamov,G. Balestrino,E. Milani,D. V. Livanov###
(829509, 829509)
 Among themare  - the presence of a peak in the c<missing VAR>-axis resistance and its growth in externalmagnetic field  - the anomalous negative magnetoresistance observed above Tc  - the deviation from the Korringa law in the temperature dependence of theNMR relaxation rate  - the opening of a large pseudo-gap in the c<missing VAR>-axis optical conductivity wellabove Tc  - the gap-like tunneling anomalies observed above Tc  - the anomalies in the thermoelectric power above Tc  We show how all these effects can be explained by the enhanced role played inquasi-2D<missing VAR> systems by the fluctuation decrease of the one-electron density ofstates (D<missing VAR>OS) at the Fermi level, and its competition with other fluctuationcontributions (AL<missing VAR>, MT).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###The Role of Density of States Fluctuations in the Normal State Properties of High Tc Superconductors|A. A. Varlamov,G. Balestrino,E. Milani,D. V. Livanov###
(829530, 829530)
 Among themare  - the presence of a peak in the c<missing VAR>-axis resistance and its growth in externalmagnetic field  - the anomalous negative magnetoresistance observed above Tc  - the deviation from the Korringa law in the temperature dependence of theNMR relaxation rate  - the opening of a large pseudo-gap in the c<missing VAR>-axis optical conductivity wellabove Tc  - the gap-like tunneling anomalies observed above Tc  - the anomalies in the thermoelectric power above Tc  We show how all these effects can be explained by the enhanced role played inquasi-2D<missing VAR> systems by the fluctuation decrease of the one-electron density ofstates (D<missing VAR>OS) at the Fermi level, and its competition with other fluctuationcontributions (AL<missing VAR>, MT).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###The Role of Density of States Fluctuations in the Normal State Properties of High Tc Superconductors|A. A. Varlamov,G. Balestrino,E. Milani,D. V. Livanov###
(829551, 829551)
 Among themare  - the presence of a peak in the c<missing VAR>-axis resistance and its growth in externalmagnetic field  - the anomalous negative magnetoresistance observed above Tc  - the deviation from the Korringa law in the temperature dependence of theNMR relaxation rate  - the opening of a large pseudo-gap in the c<missing VAR>-axis optical conductivity wellabove Tc  - the gap-like tunneling anomalies observed above Tc  - the anomalies in the thermoelectric power above Tc  We show how all these effects can be explained by the enhanced role played inquasi-2D<missing VAR> systems by the fluctuation decrease of the one-electron density ofstates (D<missing VAR>OS) at the Fermi level, and its competition with other fluctuationcontributions (AL<missing VAR>, MT).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###The Role of Density of States Fluctuations in the Normal State Properties of High Tc Superconductors|A. A. Varlamov,G. Balestrino,E. Milani,D. V. Livanov###
(829620, 829620)
 Among themare  - the presence of a peak in the c<missing VAR>-axis resistance and its growth in externalmagnetic field  - the anomalous negative magnetoresistance observed above Tc  - the deviation from the Korringa law in the temperature dependence of theNMR relaxation rate  - the opening of a large pseudo-gap in the c<missing VAR>-axis optical conductivity wellabove Tc  - the gap-like tunneling anomalies observed above Tc  - the anomalies in the thermoelectric power above Tc  We show how all these effects can be explained by the enhanced role played inquasi-2D<missing VAR> systems by the fluctuation decrease of the one-electron density ofstates (D<missing VAR>OS) at the Fermi level, and its competition with other fluctuationcontributions (AL<missing VAR>, MT).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###The Role of Density of States Fluctuations in the Normal State Properties of High Tc Superconductors|A. A. Varlamov,G. Balestrino,E. Milani,D. V. Livanov###
(829667, 829667)
 The full fluctuation theory in HT<missing VAR>S is reviewed and itsresuls compared with experimental data.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###The Role of Density of States Fluctuations in the Normal State Properties of High Tc Superconductors|A. A. Varlamov,G. Balestrino,E. Milani,D. V. Livanov###
(829669, 829669)
 The full fluctuation theory in HT<missing VAR>S is reviewed and itsresuls compared with experimental data.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###QHE, magnetoresistance and disordered transport on 2D mesoscopic plaquettes|A. Aldea,P. Gartner,M. Nita###
(829802, 829802)
 The longitudinal and Hall resistances arecalculted in the four-probe Landauer-Bu<missing VAR>ttiker formalism which accountsautomatically both for the quantum coherence and the trapping-inducedlocalization.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 2, 'D', 2]

H
###Regularization of the Density of States Fluctuation Contribution in Magnetic Field|A. I. Buzdin,A. A. Varlamov###
(830046, 830046)
 The fit of the experimental data on c<missing VAR>-axis magnetoresistance of HT<missing VAR>S above thetransition temperature with the theory based on the fluctuation renormalizationof the one-electron density of states (D<missing VAR>OS) is exellent in weak magnetic fieldsbut meets the noticible difficulties in the region of strong fields.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Regularization of the Density of States Fluctuation Contribution in Magnetic Field|A. I. Buzdin,A. A. Varlamov###
(830048, 830048)
 The fit of the experimental data on c<missing VAR>-axis magnetoresistance of HT<missing VAR>S above thetransition temperature with the theory based on the fluctuation renormalizationof the one-electron density of states (D<missing VAR>OS) is exellent in weak magnetic fieldsbut meets the noticible difficulties in the region of strong fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Regularization of the Density of States Fluctuation Contribution in Magnetic Field|A. I. Buzdin,A. A. Varlamov###
(830093, 830093)
 The fit of the experimental data on c<missing VAR>-axis magnetoresistance of HT<missing VAR>S above thetransition temperature with the theory based on the fluctuation renormalizationof the one-electron density of states (D<missing VAR>OS) is exellent in weak magnetic fieldsbut meets the noticible difficulties in the region of strong fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OS
###Regularization of the Density of States Fluctuation Contribution in Magnetic Field|A. I. Buzdin,A. A. Varlamov###
(830152, 830153)
 This isdue to the formal divergency of the D<missing VAR>OS contribution to conductivity and thedependence of the cut-off parameter on the magnetic field itself.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OS
###Regularization of the Density of States Fluctuation Contribution in Magnetic Field|A. I. Buzdin,A. A. Varlamov###
(830241, 830242)
 This permits us to obtain theexpression for the magnetic field dependent part of D<missing VAR>OS conductivity as aconvergent serie independent on cut-off.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OS
###Regularization of the Density of States Fluctuation Contribution in Magnetic Field|A. I. Buzdin,A. A. Varlamov###
(830306, 830307)
 The results demonstrate therobustness of the D<missing VAR>OS contribution with respect to the magnetic field effectin strong fields it decreases logarithmically only while Aslamazov-Larkin andanomalous Maki-Thompson contributions diminish as powers of Hc<missing VAR>2/H.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Regularization of the Density of States Fluctuation Contribution in Magnetic Field|A. I. Buzdin,A. A. Varlamov###
(830365, 830365)
 The results demonstrate therobustness of the D<missing VAR>OS contribution with respect to the magnetic field effectin strong fields it decreases logarithmically only while Aslamazov-Larkin andanomalous Maki-Thompson contributions diminish as powers of Hc<missing VAR>2/H.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Regularization of the Density of States Fluctuation Contribution in Magnetic Field|A. I. Buzdin,A. A. Varlamov###
(830369, 830369)
 The results demonstrate therobustness of the D<missing VAR>OS contribution with respect to the magnetic field effectin strong fields it decreases logarithmically only while Aslamazov-Larkin andanomalous Maki-Thompson contributions diminish as powers of Hc<missing VAR>2/H.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La2.3-x
###Metal-Insulator Transition and Ferromagnetism in the Electron Doped Layered Manganites La2.3-xYxCa0.7Mn2O7 (x=0,0.3,0.5)|P. Raychaudhuri,C. Mitra,A. Paramekanti,R. Pinto,A. K. Nigam,S. K. Dhar###
(830402, 830405)
Metal-Insulator Transition and Ferromagnetism in the Electron Doped Layered Manganites La2.3-xYxCa0.7Mn2O7 (x<missing VAR>0,0.3,0.5).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[11.0, 0, ',', 0],[13.0, 0.3, ',', 0],[39.0, 0, ',', 1],[41.0, 0.3, ',', 1],[43.0, 0.5, ',', 1],[134.0, 170, 'K', 2],[149.0, 140, 'K', 3],[175.0, 94, '%', 3],[179.0, 100, 'K', 3],[182.0, 34, 'kOe', 3],[191.0, 0.3, 'the', 4]

Ca0.7Mn2O7
###Metal-Insulator Transition and Ferromagnetism in the Electron Doped Layered Manganites La2.3-xYxCa0.7Mn2O7 (x=0,0.3,0.5)|P. Raychaudhuri,C. Mitra,A. Paramekanti,R. Pinto,A. K. Nigam,S. K. Dhar###
(830407, 830412)
Metal-Insulator Transition and Ferromagnetism in the Electron Doped Layered Manganites La2.3-xYxCa0.7Mn2O7 (x<missing VAR>0,0.3,0.5).
Featurization terminated normally.
0,0,0,0,0,0,0,0.7216494845360826,0,0,0,0,0,0,0,0,0,0,0,0.07216494845360825,0,0,0,0,0.2061855670103093,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 0, ',', 0],[6.0, 0.3, ',', 0],[32.0, 0, ',', 1],[34.0, 0.3, ',', 1],[36.0, 0.5, ',', 1],[127.0, 170, 'K', 2],[142.0, 140, 'K', 3],[168.0, 94, '%', 3],[172.0, 100, 'K', 3],[175.0, 34, 'kOe', 3],[184.0, 0.3, 'the', 4]

La2.3-x
###Metal-Insulator Transition and Ferromagnetism in the Electron Doped Layered Manganites La2.3-xYxCa0.7Mn2O7 (x=0,0.3,0.5)|P. Raychaudhuri,C. Mitra,A. Paramekanti,R. Pinto,A. K. Nigam,S. K. Dhar###
(830430, 830433)
 Bulk samples of La2.3-xYxCa0.7Mn2O7, x<missing VAR>0,0.3,0.5, with layered perovskitestructure have been synthesized and investigated with respect to theirelectrical, electronic and magnetic properties.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[14.0, 0, ',', 1],[12.0, 0.3, ',', 1],[11.0, 0, ',', 0],[13.0, 0.3, ',', 0],[15.0, 0.5, ',', 0],[106.0, 170, 'K', 1],[121.0, 140, 'K', 2],[147.0, 94, '%', 2],[151.0, 100, 'K', 2],[154.0, 34, 'kOe', 2],[163.0, 0.3, 'the', 3]

Ca0.7Mn2O7
###Metal-Insulator Transition and Ferromagnetism in the Electron Doped Layered Manganites La2.3-xYxCa0.7Mn2O7 (x=0,0.3,0.5)|P. Raychaudhuri,C. Mitra,A. Paramekanti,R. Pinto,A. K. Nigam,S. K. Dhar###
(830435, 830440)
 Bulk samples of La2.3-xYxCa0.7Mn2O7, x<missing VAR>0,0.3,0.5, with layered perovskitestructure have been synthesized and investigated with respect to theirelectrical, electronic and magnetic properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0.7216494845360826,0,0,0,0,0,0,0,0,0,0,0,0.07216494845360825,0,0,0,0,0.2061855670103093,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 0, ',', 1],[17.0, 0.3, ',', 1],[4.0, 0, ',', 0],[6.0, 0.3, ',', 0],[8.0, 0.5, ',', 0],[99.0, 170, 'K', 1],[114.0, 140, 'K', 2],[140.0, 94, '%', 2],[144.0, 100, 'K', 2],[147.0, 34, 'kOe', 2],[156.0, 0.3, 'the', 3]

La1.8Y0.5Ca0.7Mn2O7
###Metal-Insulator Transition and Ferromagnetism in the Electron Doped Layered Manganites La2.3-xYxCa0.7Mn2O7 (x=0,0.3,0.5)|P. Raychaudhuri,C. Mitra,A. Paramekanti,R. Pinto,A. K. Nigam,S. K. Dhar###
(830500, 830509)
 It is found thatLa1.8Y0.5Ca0.7Mn2O7 has tetragonal structure and is a metallic ferromagnet witha magnetic transition temperature of 170 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0.05833333333333333,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.041666666666666664,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 0, ',', 2],[82.0, 0.3, ',', 2],[56.0, 0, ',', 1],[54.0, 0.3, ',', 1],[52.0, 0.5, ',', 1],[30.0, 170, 'K', 0],[45.0, 140, 'K', 1],[71.0, 94, '%', 1],[75.0, 100, 'K', 1],[78.0, 34, 'kOe', 1],[87.0, 0.3, 'the', 2]

As
###Metal-Insulator Transition and Ferromagnetism in the Electron Doped Layered Manganites La2.3-xYxCa0.7Mn2O7 (x=0,0.3,0.5)|P. Raychaudhuri,C. Mitra,A. Paramekanti,R. Pinto,A. K. Nigam,S. K. Dhar###
(830673, 830673)
 As far as we are aware, this isthe first report of an electron doped manganite showing metal-insulatortransition and ferromagnetism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[257.0, 0, ',', 7],[255.0, 0.3, ',', 7],[229.0, 0, ',', 6],[227.0, 0.3, ',', 6],[225.0, 0.5, ',', 6],[134.0, 170, 'K', 5],[119.0, 140, 'K', 4],[93.0, 94, '%', 4],[89.0, 100, 'K', 4],[86.0, 34, 'kOe', 4],[77.0, 0.3, 'the', 3]

GaAs
###Critical Collapse of the Exchange Enhanced Spin Splitting in 2-D Systems|D. R. Leadley,R. J. Nicholas,J. J. Harris,C. T. Foxon###
(830794, 830795)
 The critical filling factor vc where Shubnikov-de Haas oscillations becomespin split is investigated for a set of GaAs-GaAlAs heterojunctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 2, 'm', 2]

GaAlAs
###Critical Collapse of the Exchange Enhanced Spin Splitting in 2-D Systems|D. R. Leadley,R. J. Nicholas,J. J. Harris,C. T. Foxon###
(830797, 830799)
 The critical filling factor vc where Shubnikov-de Haas oscillations becomespin split is investigated for a set of GaAs-GaAlAs heterojunctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 2, 'm', 2]

YBa2Cu3O7
###Magnetoresistance of YBa2Cu3O7 in the "cold spots" model|Anatoley T. Zheleznyak,Victor M. Yakovenko,H. D. Drew###
(831416, 831422)
Magnetoresistance of YBa2Cu3O7 in the cold spots model.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5384615384615384,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23076923076923078,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15384615384615385,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[260.0, 5.5, ',', 4]

YBa2Cu3O7
###Magnetoresistance of YBa2Cu3O7 in the "cold spots" model|Anatoley T. Zheleznyak,Victor M. Yakovenko,H. D. Drew###
(831457, 831463)
 We calculate the in-plane magnetoresistance Deltarhoxx/rhoxx ofYBa2Cu3O7 in a magnetic field applied perpendicular to the CuO2planes for the cold spots model.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5384615384615384,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23076923076923078,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15384615384615385,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[219.0, 5.5, ',', 3]

CuO2
###Magnetoresistance of YBa2Cu3O7 in the "cold spots" model|Anatoley T. Zheleznyak,Victor M. Yakovenko,H. D. Drew###
(831481, 831483)
 We calculate the in-plane magnetoresistance Deltarhoxx/rhoxx ofYBa2Cu3O7 in a magnetic field applied perpendicular to the CuO2planes for the cold spots model.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[199.0, 5.5, ',', 3]

In
###Magnetoresistance of YBa2Cu3O7 in the "cold spots" model|Anatoley T. Zheleznyak,Victor M. Yakovenko,H. D. Drew###
(831499, 831499)
 In this model, the electron relaxationtime tau2propto1/T<missing VAR>2 at small regions on the Fermi surface near theBrillouin zone diagonals is much longer than the relaxation timetau1propto1/T<missing VAR> at the rest of the Fermi surface (T<missing VAR> is temperature).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[183.0, 5.5, ',', 2]

In
###Magnetoresistance of YBa2Cu3O7 in the "cold spots" model|Anatoley T. Zheleznyak,Victor M. Yakovenko,H. D. Drew###
(831593, 831593)
 Inqualitative agreement with the experiment, we find that Kohlers<missing VAR> rule isstrongly violated, but the ratio Deltarhoxx/rhoxxtan2thetaH,where tanthetaH is the Hall angle, is approximatelytemperature-independent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 5.5, ',', 1]

H
###Magnetoresistance of YBa2Cu3O7 in the "cold spots" model|Anatoley T. Zheleznyak,Victor M. Yakovenko,H. D. Drew###
(831641, 831641)
 Inqualitative agreement with the experiment, we find that Kohlers<missing VAR> rule isstrongly violated, but the ratio Deltarhoxx/rhoxxtan2thetaH,where tanthetaH is the Hall angle, is approximatelytemperature-independent.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 5.5, ',', 1]

H
###Magnetoresistance of YBa2Cu3O7 in the "cold spots" model|Anatoley T. Zheleznyak,Victor M. Yakovenko,H. D. Drew###
(831649, 831649)
 Inqualitative agreement with the experiment, we find that Kohlers<missing VAR> rule isstrongly violated, but the ratio Deltarhoxx/rhoxxtan2thetaH,where tanthetaH is the Hall angle, is approximatelytemperature-independent.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 5.5, ',', 1]

I
###Anderson localization due to spin disorder: a driving force of temperature-dependent metal-semiconductor transition in colossal-magnetoresistance materials|Eugene Kogan,Mark Auslender###
(831985, 831985)
 I.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 147, ',', 5],[38.0, 10, 'years', 5]

LaNiO3
###Magnetoresistance of metallic perovskite oxide LaNiO$_{3-δ}$|N. Gayathri,A. K. Raychaudhuri,X. Q. Xu,J. L. Peng,R. L. Greene###
(832046, 832049)
Magnetoresistance of metallic perovskite oxide LaNiO3-.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 6, 'T', 1],[94.0, 25, 'K', 1],[210.0, 20, 'K', 4]

LaNiO3
###Magnetoresistance of metallic perovskite oxide LaNiO$_{3-δ}$|N. Gayathri,A. K. Raychaudhuri,X. Q. Xu,J. L. Peng,R. L. Greene###
(832083, 832086)
 We report a study of the magnetoresistance (MR) of the metallic perovskiteoxide LaNiO3-delta as a function of the oxygen stoichiometry delta(delta leq 0.14), magnetic field (H leq 6T) and temperature (1.5K leq T<missing VAR> leq  25K).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 6, 'T', 0],[57.0, 25, 'K', 0],[173.0, 20, 'K', 3]

H
###Magnetoresistance of metallic perovskite oxide LaNiO$_{3-δ}$|N. Gayathri,A. K. Raychaudhuri,X. Q. Xu,J. L. Peng,R. L. Greene###
(832121, 832121)
 We report a study of the magnetoresistance (MR) of the metallic perovskiteoxide LaNiO3-delta as a function of the oxygen stoichiometry delta(delta leq 0.14), magnetic field (H leq 6T) and temperature (1.5K leq T<missing VAR> leq  25K).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 6, 'T', 0],[22.0, 25, 'K', 0],[138.0, 20, 'K', 3]

K
###Magnetoresistance of metallic perovskite oxide LaNiO$_{3-δ}$|N. Gayathri,A. K. Raychaudhuri,X. Q. Xu,J. L. Peng,R. L. Greene###
(832133, 832133)
 We report a study of the magnetoresistance (MR) of the metallic perovskiteoxide LaNiO3-delta as a function of the oxygen stoichiometry delta(delta leq 0.14), magnetic field (H leq 6T) and temperature (1.5K leq T<missing VAR> leq  25K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 6, 'T', 0],[10.0, 25, 'K', 0],[126.0, 20, 'K', 3]

P
###P-wave Pairing and Colossal Magnetoresistance in Manganese Oxides|Yong-Jihn Kim###
(832364, 832364)
P-wave Pairing and Colossal Magnetoresistance in Manganese Oxides.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

He
###P-wave Pairing and Colossal Magnetoresistance in Manganese Oxides|Yong-Jihn Kim###
(832491, 832491)
 The superconducting state is similar to theA1 state in superfluid He-3.
Featurization terminated normally.
0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###P-wave Pairing and Colossal Magnetoresistance in Manganese Oxides|Yong-Jihn Kim###
(832555, 832555)
 In addition, colossal magnetoresistance (CMR) isnaturally explained by the superconducting fluctuations with increasingmagnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###P-wave Pairing and Colossal Magnetoresistance in Manganese Oxides|Yong-Jihn Kim###
(832565, 832565)
 In addition, colossal magnetoresistance (CMR) isnaturally explained by the superconducting fluctuations with increasingmagnetic fields.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Negative magnetoresistance in the nearest-neighbour hopping conduction in granular gold film|B. I. Belevtsev,E. Yu. Beliayev,Yu. F. Komnik,E. Yu. Kopeichenko###
(832683, 832683)
 The low temperature (0.5-55 K) conduction of semicontinuous gold film vacuumdeposited at T<missing VAR> approx 50 K is studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 50, 'K', 0],[47.0, 3.25, 'nm', 1],[137.0, 20, 'K', 4],[164.0, 1, 'K', 4],[172.0, 0.1, 'V', 4]

U
###Negative magnetoresistance in the nearest-neighbour hopping conduction in granular gold film|B. I. Belevtsev,E. Yu. Beliayev,Yu. F. Komnik,E. Yu. Kopeichenko###
(832753, 832753)
 Its resistance is extremely sensitive to theapplied voltage U.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 50, 'K', 2],[23.0, 3.25, 'nm', 1],[67.0, 20, 'K', 2],[94.0, 1, 'K', 2],[102.0, 0.1, 'V', 2]

At
###Negative magnetoresistance in the nearest-neighbour hopping conduction in granular gold film|B. I. Belevtsev,E. Yu. Beliayev,Yu. F. Komnik,E. Yu. Kopeichenko###
(832756, 832756)
 At low enough U the film behaves as an insulator(two-dimensional granular metal).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 50, 'K', 3],[26.0, 3.25, 'nm', 2],[64.0, 20, 'K', 1],[91.0, 1, 'K', 1],[99.0, 0.1, 'V', 1]

U
###Negative magnetoresistance in the nearest-neighbour hopping conduction in granular gold film|B. I. Belevtsev,E. Yu. Beliayev,Yu. F. Komnik,E. Yu. Kopeichenko###
(832762, 832762)
 At low enough U the film behaves as an insulator(two-dimensional granular metal).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 50, 'K', 3],[32.0, 3.25, 'nm', 2],[58.0, 20, 'K', 1],[85.0, 1, 'K', 1],[93.0, 0.1, 'V', 1]

In
###Negative magnetoresistance in the nearest-neighbour hopping conduction in granular gold film|B. I. Belevtsev,E. Yu. Beliayev,Yu. F. Komnik,E. Yu. Kopeichenko###
(832788, 832788)
 In this state the dependences R(T) proptoexp (1/T) (for T<missing VAR> leq 20 K) and R<missing VAR>(U) propto exp (1/U)) (for T<missing VAR> leq 1 K and U> 0.1 V) are observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 50, 'K', 4],[58.0, 3.25, 'nm', 3],[32.0, 20, 'K', 0],[59.0, 1, 'K', 0],[67.0, 0.1, 'V', 0]

(U)
###Negative magnetoresistance in the nearest-neighbour hopping conduction in granular gold film|B. I. Belevtsev,E. Yu. Beliayev,Yu. F. Komnik,E. Yu. Kopeichenko###
(832826, 832828)
 In this state the dependences R(T) proptoexp (1/T) (for T<missing VAR> leq 20 K) and R<missing VAR>(U) propto exp (1/U)) (for T<missing VAR> leq 1 K and U> 0.1 V) are observed.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 50, 'K', 4],[96.0, 3.25, 'nm', 3],[6.0, 20, 'K', 0],[19.0, 1, 'K', 0],[27.0, 0.1, 'V', 0]

U
###Negative magnetoresistance in the nearest-neighbour hopping conduction in granular gold film|B. I. Belevtsev,E. Yu. Beliayev,Yu. F. Komnik,E. Yu. Kopeichenko###
(832837, 832837)
 In this state the dependences R(T) proptoexp (1/T) (for T<missing VAR> leq 20 K) and R<missing VAR>(U) propto exp (1/U)) (for T<missing VAR> leq 1 K and U> 0.1 V) are observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 50, 'K', 4],[107.0, 3.25, 'nm', 3],[17.0, 20, 'K', 0],[10.0, 1, 'K', 0],[18.0, 0.1, 'V', 0]

U
###Negative magnetoresistance in the nearest-neighbour hopping conduction in granular gold film|B. I. Belevtsev,E. Yu. Beliayev,Yu. F. Komnik,E. Yu. Kopeichenko###
(832851, 832851)
 In this state the dependences R(T) proptoexp (1/T) (for T<missing VAR> leq 20 K) and R<missing VAR>(U) propto exp (1/U)) (for T<missing VAR> leq 1 K and U> 0.1 V) are observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 50, 'K', 4],[121.0, 3.25, 'nm', 3],[31.0, 20, 'K', 0],[4.0, 1, 'K', 0],[4.0, 0.1, 'V', 0]

(H)
###Negative magnetoresistance in the nearest-neighbour hopping conduction in granular gold film|B. I. Belevtsev,E. Yu. Beliayev,Yu. F. Komnik,E. Yu. Kopeichenko###
(832888, 832890)
 Magnetoresistance (MR) is negative and can be describedby Delta R<missing VAR>(H)/R<missing VAR>(0) propto -H2/T<missing VAR>.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[182.0, 50, 'K', 5],[158.0, 3.25, 'nm', 4],[68.0, 20, 'K', 1],[41.0, 1, 'K', 1],[33.0, 0.1, 'V', 1]

H2
###Negative magnetoresistance in the nearest-neighbour hopping conduction in granular gold film|B. I. Belevtsev,E. Yu. Beliayev,Yu. F. Komnik,E. Yu. Kopeichenko###
(832900, 832901)
 Magnetoresistance (MR) is negative and can be describedby Delta R<missing VAR>(H)/R<missing VAR>(0) propto -H2/T<missing VAR>.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[194.0, 50, 'K', 5],[170.0, 3.25, 'nm', 4],[80.0, 20, 'K', 1],[53.0, 1, 'K', 1],[45.0, 0.1, 'V', 1]

Ni
###Magnetoresistance of Granular Ferromagnets - Observation of a Magnetic Proximity Effect?|A. Frydman,R. C. Dynes###
(833035, 833035)
 We have observed a superparamagnetic to ferromagnetic transition in films ofisolated Ni grains covered by non-magnetic overlayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Magnetoresistance of Granular Ferromagnets - Observation of a Magnetic Proximity Effect?|A. Frydman,R. C. Dynes###
(833093, 833093)
Initially, the granular Ni films exhibited negative MR curves peaked at H0.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H0
###Magnetoresistance of Granular Ferromagnets - Observation of a Magnetic Proximity Effect?|A. Frydman,R. C. Dynes###
(833110, 833111)
Initially, the granular Ni films exhibited negative MR curves peaked at H0.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Magnetoresistance of Granular Ferromagnets - Observation of a Magnetic Proximity Effect?|A. Frydman,R. C. Dynes###
(833114, 833114)
 Asdifferent materials were deposited onto the grains hysteresis developed in theMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Long-range coherence and mesoscopic transport in N-S metallic structures|H. Courtois,Ph. Gandit,B. Pannetier,D. Mailly###
(833335, 833335)
Long-range coherence and mesoscopic transport in N-S metallic structures.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Long-range coherence and mesoscopic transport in N-S metallic structures|H. Courtois,Ph. Gandit,B. Pannetier,D. Mailly###
(833337, 833337)
Long-range coherence and mesoscopic transport in N-S metallic structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(N)
###Long-range coherence and mesoscopic transport in N-S metallic structures|H. Courtois,Ph. Gandit,B. Pannetier,D. Mailly###
(833375, 833377)
 We review the mesoscopic transport in a diffusive proximity superconductormade of a normal metal (N) in metallic contact with a superconductor (S).
Featurization successful!
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(S)
###Long-range coherence and mesoscopic transport in N-S metallic structures|H. Courtois,Ph. Gandit,B. Pannetier,D. Mailly###
(833391, 833393)
 We review the mesoscopic transport in a diffusive proximity superconductormade of a normal metal (N) in metallic contact with a superconductor (S).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Long-range coherence and mesoscopic transport in N-S metallic structures|H. Courtois,Ph. Gandit,B. Pannetier,D. Mailly###
(833411, 833411)
 TheAndreev reflection of electrons on the N-S interface is responsible for thediffusion of electron pairs in N.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Long-range coherence and mesoscopic transport in N-S metallic structures|H. Courtois,Ph. Gandit,B. Pannetier,D. Mailly###
(833413, 833413)
 TheAndreev reflection of electrons on the N-S interface is responsible for thediffusion of electron pairs in N.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Long-range coherence and mesoscopic transport in N-S metallic structures|H. Courtois,Ph. Gandit,B. Pannetier,D. Mailly###
(833436, 833436)
 TheAndreev reflection of electrons on the N-S interface is responsible for thediffusion of electron pairs in N.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Long-range coherence and mesoscopic transport in N-S metallic structures|H. Courtois,Ph. Gandit,B. Pannetier,D. Mailly###
(833459, 833459)
 In particular, the conductivity of the N metal is locallyenhanced by the proximity effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Long-range coherence and mesoscopic transport in N-S metallic structures|H. Courtois,Ph. Gandit,B. Pannetier,D. Mailly###
(833472, 833472)
 In particular, the conductivity of the N metal is locallyenhanced by the proximity effect.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Long-range coherence and mesoscopic transport in N-S metallic structures|H. Courtois,Ph. Gandit,B. Pannetier,D. Mailly###
(833587, 833587)
In loop-shaped devices, a 1/T<missing VAR> temperature-dependent oscillation of themagnetoresistance arises with a large amplitude from the long-range coherenceof low-energy pairs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.875Sr0.125MnO3
###An X-Ray Induced Structural Transition in La_0.875Sr_0.125MnO_3|V. Kiryukhin,Y. J. Wang,F. C. Chou,M. A. Kastner,R. J. Birgeneau###
(833667, 833673)
An X<missing VAR>-Ray Induced Structural Transition in La0.875Sr0.125MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.025,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.175,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.875Sr0.125MnO3
###An X-Ray Induced Structural Transition in La_0.875Sr_0.125MnO_3|V. Kiryukhin,Y. J. Wang,F. C. Chou,M. A. Kastner,R. J. Birgeneau###
(833701, 833707)
 We report a synchrotron x<missing VAR>-ray scattering study of the magnetoresistivemanganite La0.875Sr0.125MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.025,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.175,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###An X-Ray Induced Structural Transition in La_0.875Sr_0.125MnO_3|V. Kiryukhin,Y. J. Wang,F. C. Chou,M. A. Kastner,R. J. Birgeneau###
(833710, 833710)
 At low temperatures, this material undergoesan x<missing VAR>-ray induced structural transition at which charge ordering of Mn3 andMn4 ions characteristic to the low-temperature state of this compound isdestroyed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn3
###An X-Ray Induced Structural Transition in La_0.875Sr_0.125MnO_3|V. Kiryukhin,Y. J. Wang,F. C. Chou,M. A. Kastner,R. J. Birgeneau###
(833746, 833747)
 At low temperatures, this material undergoesan x<missing VAR>-ray induced structural transition at which charge ordering of Mn3 andMn4 ions characteristic to the low-temperature state of this compound isdestroyed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn4
###An X-Ray Induced Structural Transition in La_0.875Sr_0.125MnO_3|V. Kiryukhin,Y. J. Wang,F. C. Chou,M. A. Kastner,R. J. Birgeneau###
(833752, 833753)
 At low temperatures, this material undergoesan x<missing VAR>-ray induced structural transition at which charge ordering of Mn3 andMn4 ions characteristic to the low-temperature state of this compound isdestroyed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pr(1-x)Ca
###An X-Ray Induced Structural Transition in La_0.875Sr_0.125MnO_3|V. Kiryukhin,Y. J. Wang,F. C. Chou,M. A. Kastner,R. J. Birgeneau###
(833913, 833919)
 Together with therecent reports on x<missing VAR>-ray induced transitions in Pr(1-x)Cax<missing VAR>MnO3, our resultsdemonstrate that the photoinduced structural change is a common property of thecharge-ordered perovskite manganites.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

MnO3
###An X-Ray Induced Structural Transition in La_0.875Sr_0.125MnO_3|V. Kiryukhin,Y. J. Wang,F. C. Chou,M. A. Kastner,R. J. Birgeneau###
(833921, 833923)
 Together with therecent reports on x<missing VAR>-ray induced transitions in Pr(1-x)Cax<missing VAR>MnO3, our resultsdemonstrate that the photoinduced structural change is a common property of thecharge-ordered perovskite manganites.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Sr2-xLa
###Non-Universal Power Law of the "Hall Scattering Rate" in a Single-Layer Cuprate Bi_{2}Sr_{2-x}La_{x}CuO_{6}|Yoichi Ando,T. Murayama###
(834001, 834007)
Non-Universal Power Law of the Hall Scattering Rate in a Single-Layer Cuprate Bi2Sr2-xLax<missing VAR>CuO6.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[241.0, 1.7, ',', 4],[249.0, 2, ',', 4]

CuO6
###Non-Universal Power Law of the "Hall Scattering Rate" in a Single-Layer Cuprate Bi_{2}Sr_{2-x}La_{x}CuO_{6}|Yoichi Ando,T. Murayama###
(834009, 834011)
Non-Universal Power Law of the Hall Scattering Rate in a Single-Layer Cuprate Bi2Sr2-xLax<missing VAR>CuO6.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[237.0, 1.7, ',', 4],[245.0, 2, ',', 4]

In
###Non-Universal Power Law of the "Hall Scattering Rate" in a Single-Layer Cuprate Bi_{2}Sr_{2-x}La_{x}CuO_{6}|Yoichi Ando,T. Murayama###
(834014, 834014)
 In-plane resistivity rhoab, Hall coefficient, and magnetoresistance (MR)are measured in a series of high-quality Bi2Sr2-xLax<missing VAR>CuO6 crystalswith various carrier concentrations, from underdope to overdope.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[234.0, 1.7, ',', 3],[242.0, 2, ',', 3]

Bi2Sr2-xLa
###Non-Universal Power Law of the "Hall Scattering Rate" in a Single-Layer Cuprate Bi_{2}Sr_{2-x}La_{x}CuO_{6}|Yoichi Ando,T. Murayama###
(834055, 834061)
 In-plane resistivity rhoab, Hall coefficient, and magnetoresistance (MR)are measured in a series of high-quality Bi2Sr2-xLax<missing VAR>CuO6 crystalswith various carrier concentrations, from underdope to overdope.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[187.0, 1.7, ',', 3],[195.0, 2, ',', 3]

CuO6
###Non-Universal Power Law of the "Hall Scattering Rate" in a Single-Layer Cuprate Bi_{2}Sr_{2-x}La_{x}CuO_{6}|Yoichi Ando,T. Murayama###
(834063, 834065)
 In-plane resistivity rhoab, Hall coefficient, and magnetoresistance (MR)are measured in a series of high-quality Bi2Sr2-xLax<missing VAR>CuO6 crystalswith various carrier concentrations, from underdope to overdope.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[183.0, 1.7, ',', 3],[191.0, 2, ',', 3]

K
###Non-Universal Power Law of the "Hall Scattering Rate" in a Single-Layer Cuprate Bi_{2}Sr_{2-x}La_{x}CuO_{6}|Yoichi Ando,T. Murayama###
(834105, 834105)
 Our crystalsshow the highest Tc (33 K) and the smallest residual resistivity ever reportedfor Bi-2201 at optimum doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 1.7, ',', 2],[151.0, 2, ',', 2]

Bi
###Non-Universal Power Law of the "Hall Scattering Rate" in a Single-Layer Cuprate Bi_{2}Sr_{2-x}La_{x}CuO_{6}|Yoichi Ando,T. Murayama###
(834125, 834125)
 Our crystalsshow the highest Tc (33 K) and the smallest residual resistivity ever reportedfor Bi-2201 at optimum doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 1.7, ',', 2],[131.0, 2, ',', 2]

In
###Non-Universal Power Law of the "Hall Scattering Rate" in a Single-Layer Cuprate Bi_{2}Sr_{2-x}La_{x}CuO_{6}|Yoichi Ando,T. Murayama###
(834221, 834221)
 In particular, the Hall angle ofthe optimally-doped sample changes as T<missing VAR>1.7, not as T<missing VAR>2, while rhoabshows a good T<missing VAR>-linear behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 1.7, ',', 0],[35.0, 2, ',', 0]

Gd
###Magnetic precursor effects in Gd alloys|R. Mallik,E. V. Sampathkumaran###
(834327, 834327)
Magnetic precursor effects in Gd alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Gd
###Magnetic precursor effects in Gd alloys|R. Mallik,E. V. Sampathkumaran###
(834375, 834375)
 The behaviour of electrical resistivity (rho) and magnetoresistance in thevicinity of respective magnetic ordering temperatures in a number of Gd alloysis reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magnetic precursor effects in Gd alloys|R. Mallik,E. V. Sampathkumaran###
(834385, 834385)
 In some compounds, e.g.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GdNi2Sn2
###Magnetic precursor effects in Gd alloys|R. Mallik,E. V. Sampathkumaran###
(834398, 834402)
, GdNi2Sn2 and GdPt2Ge2, there is anenhancement of rho prior to long range magnetic order over a widetemperature range which can be highlighted by the suppression of rho causedby the application of a magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GdPt2Ge2
###Magnetic precursor effects in Gd alloys|R. Mallik,E. V. Sampathkumaran###
(834406, 834410)
, GdNi2Sn2 and GdPt2Ge2, there is anenhancement of rho prior to long range magnetic order over a widetemperature range which can be highlighted by the suppression of rho causedby the application of a magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Gd
###Magnetic precursor effects in Gd alloys|R. Mallik,E. V. Sampathkumaran###
(834503, 834503)
 However, such features are absent inmany other Gd compounds, e.g.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GdCu2Ge2
###Magnetic precursor effects in Gd alloys|R. Mallik,E. V. Sampathkumaran###
(834514, 834518)
, GdCu2Ge2, GdAg2Si2, GdAu2Si2, GdPd2Ge2and GdCo2Si2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GdAg2Si2
###Magnetic precursor effects in Gd alloys|R. Mallik,E. V. Sampathkumaran###
(834521, 834525)
, GdCu2Ge2, GdAg2Si2, GdAu2Si2, GdPd2Ge2and GdCo2Si2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GdAu2Si2
###Magnetic precursor effects in Gd alloys|R. Mallik,E. V. Sampathkumaran###
(834528, 834532)
, GdCu2Ge2, GdAg2Si2, GdAu2Si2, GdPd2Ge2and GdCo2Si2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GdPd2Ge2
###Magnetic precursor effects in Gd alloys|R. Mallik,E. V. Sampathkumaran###
(834535, 834539)
, GdCu2Ge2, GdAg2Si2, GdAu2Si2, GdPd2Ge2and GdCo2Si2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GdCo2Si2
###Magnetic precursor effects in Gd alloys|R. Mallik,E. V. Sampathkumaran###
(834544, 834548)
, GdCu2Ge2, GdAg2Si2, GdAu2Si2, GdPd2Ge2and GdCo2Si2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Gd
###Magnetic precursor effects in Gd alloys|R. Mallik,E. V. Sampathkumaran###
(834615, 834615)
 On the basis of our studies, we suggest that betterunderstanding of magnetic precursor effects in Gd alloys will be helpful tothrow light on some of the current trends in magnetism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Temperature dependence of electric resistance and magnetoresistance of pressed nanocomposites of multilayer nanotubes with the structure of nested cones|V. I. Tsebro,O. E. Omel'yanovskii,E. F. Kukovitskii,N. A. Sainov,N. A. Kiselev,D. N. Zakharov###
(834855, 834855)
 In the low-temperature range (4.2 - 100 K)the electric resistance of the samples changes according to the law ln rho (T<missing VAR>0/T)1/3, where T<missing VAR>0  7 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 100, 'K', 0],[54.0, 3, ',', 0],[62.0, 7, 'K', 0]

V
###Temperature dependence of electric resistance and magnetoresistance of pressed nanocomposites of multilayer nanotubes with the structure of nested cones|V. I. Tsebro,O. E. Omel'yanovskii,E. F. Kukovitskii,N. A. Sainov,N. A. Kiselev,D. N. Zakharov###
(835069, 835069)
 Estimatessuggest a high value of the density of electron states at the Fermi level ofabout 5 1021 e<missing VAR>V-1 cm-3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[200.0, 100, 'K', 4],[160.0, 3, ',', 4],[152.0, 7, 'K', 4]

B
###Negative magnetoresistance in La(0.6)Y(0.1)Ca(0.3)MnO(3): Evidence for charge localization governed by the Curie-Weiss law|S. Sergeenkov,H. Bougrine,M. Ausloos,A. Gilabert###
(835144, 835144)
 Colossal negative magnetoresistance Delta rho (T<missing VAR>,B) observed inLa(0.6)Y(0.1)Ca(0.3)MnO(3) at B1T<missing VAR> shows a nearly perfect symmetry aroundT<missing VAR>0160K suggesting a universal field-induced transport mechanism in thismaterial.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[272.0, 1.0, 'The', 2]

B1
###Negative magnetoresistance in La(0.6)Y(0.1)Ca(0.3)MnO(3): Evidence for charge localization governed by the Curie-Weiss law|S. Sergeenkov,H. Bougrine,M. Ausloos,A. Gilabert###
(835172, 835173)
 Colossal negative magnetoresistance Delta rho (T<missing VAR>,B) observed inLa(0.6)Y(0.1)Ca(0.3)MnO(3) at B1T<missing VAR> shows a nearly perfect symmetry aroundT<missing VAR>0160K suggesting a universal field-induced transport mechanism in thismaterial.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[243.0, 1.0, 'The', 2]

K
###Negative magnetoresistance in La(0.6)Y(0.1)Ca(0.3)MnO(3): Evidence for charge localization governed by the Curie-Weiss law|S. Sergeenkov,H. Bougrine,M. Ausloos,A. Gilabert###
(835192, 835192)
 Colossal negative magnetoresistance Delta rho (T<missing VAR>,B) observed inLa(0.6)Y(0.1)Ca(0.3)MnO(3) at B1T<missing VAR> shows a nearly perfect symmetry aroundT<missing VAR>0160K suggesting a universal field-induced transport mechanism in thismaterial.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[224.0, 1.0, 'The', 2]

Y
###Negative magnetoresistance in La(0.6)Y(0.1)Ca(0.3)MnO(3): Evidence for charge localization governed by the Curie-Weiss law|S. Sergeenkov,H. Bougrine,M. Ausloos,A. Gilabert###
(835238, 835238)
 Attributing this symmetry to strong magnetic fluctuations (triggeredby the Y substitution and further enhanced by magnetic field, both above andbelow the field-dependent Curie temperature T<missing VAR>C(B)T<missing VAR>0), the data areinterpreted in terms of the nonthermal spin hopping and magnetization M<missing VAR>dependent charge carrier localization scenario leading to Delta rho (T<missing VAR>,B)-rhos<missing VAR>(1-exp(-gamma M<missing VAR>2)) with M(T,B)CB/T-TCn<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 1.0, 'The', 1]

C(B)
###Negative magnetoresistance in La(0.6)Y(0.1)Ca(0.3)MnO(3): Evidence for charge localization governed by the Curie-Weiss law|S. Sergeenkov,H. Bougrine,M. Ausloos,A. Gilabert###
(835275, 835278)
 Attributing this symmetry to strong magnetic fluctuations (triggeredby the Y substitution and further enhanced by magnetic field, both above andbelow the field-dependent Curie temperature T<missing VAR>C(B)T<missing VAR>0), the data areinterpreted in terms of the nonthermal spin hopping and magnetization M<missing VAR>dependent charge carrier localization scenario leading to Delta rho (T<missing VAR>,B)-rhos<missing VAR>(1-exp(-gamma M<missing VAR>2)) with M(T,B)CB/T-TCn<missing VAR>.
Featurization terminated normally.
0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 1.0, 'The', 1]

B
###Negative magnetoresistance in La(0.6)Y(0.1)Ca(0.3)MnO(3): Evidence for charge localization governed by the Curie-Weiss law|S. Sergeenkov,H. Bougrine,M. Ausloos,A. Gilabert###
(835335, 835335)
 Attributing this symmetry to strong magnetic fluctuations (triggeredby the Y substitution and further enhanced by magnetic field, both above andbelow the field-dependent Curie temperature T<missing VAR>C(B)T<missing VAR>0), the data areinterpreted in terms of the nonthermal spin hopping and magnetization M<missing VAR>dependent charge carrier localization scenario leading to Delta rho (T<missing VAR>,B)-rhos<missing VAR>(1-exp(-gamma M<missing VAR>2)) with M(T,B)CB/T-TCn<missing VAR>.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 1.0, 'The', 1]

B
###Negative magnetoresistance in La(0.6)Y(0.1)Ca(0.3)MnO(3): Evidence for charge localization governed by the Curie-Weiss law|S. Sergeenkov,H. Bougrine,M. Ausloos,A. Gilabert###
(835361, 835361)
 Attributing this symmetry to strong magnetic fluctuations (triggeredby the Y substitution and further enhanced by magnetic field, both above andbelow the field-dependent Curie temperature T<missing VAR>C(B)T<missing VAR>0), the data areinterpreted in terms of the nonthermal spin hopping and magnetization M<missing VAR>dependent charge carrier localization scenario leading to Delta rho (T<missing VAR>,B)-rhos<missing VAR>(1-exp(-gamma M<missing VAR>2)) with M(T,B)CB/T-TCn<missing VAR>.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 1.0, 'The', 1]

CB
###Negative magnetoresistance in La(0.6)Y(0.1)Ca(0.3)MnO(3): Evidence for charge localization governed by the Curie-Weiss law|S. Sergeenkov,H. Bougrine,M. Ausloos,A. Gilabert###
(835363, 835364)
 Attributing this symmetry to strong magnetic fluctuations (triggeredby the Y substitution and further enhanced by magnetic field, both above andbelow the field-dependent Curie temperature T<missing VAR>C(B)T<missing VAR>0), the data areinterpreted in terms of the nonthermal spin hopping and magnetization M<missing VAR>dependent charge carrier localization scenario leading to Delta rho (T<missing VAR>,B)-rhos<missing VAR>(1-exp(-gamma M<missing VAR>2)) with M(T,B)CB/T-TCn<missing VAR>.
Featurization terminated normally.
0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 1.0, 'The', 1]

C
###Negative magnetoresistance in La(0.6)Y(0.1)Ca(0.3)MnO(3): Evidence for charge localization governed by the Curie-Weiss law|S. Sergeenkov,H. Bougrine,M. Ausloos,A. Gilabert###
(835369, 835369)
 Attributing this symmetry to strong magnetic fluctuations (triggeredby the Y substitution and further enhanced by magnetic field, both above andbelow the field-dependent Curie temperature T<missing VAR>C(B)T<missing VAR>0), the data areinterpreted in terms of the nonthermal spin hopping and magnetization M<missing VAR>dependent charge carrier localization scenario leading to Delta rho (T<missing VAR>,B)-rhos<missing VAR>(1-exp(-gamma M<missing VAR>2)) with M(T,B)CB/T-TCn<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 1.0, 'The', 1]

C
###Negative magnetoresistance in La(0.6)Y(0.1)Ca(0.3)MnO(3): Evidence for charge localization governed by the Curie-Weiss law|S. Sergeenkov,H. Bougrine,M. Ausloos,A. Gilabert###
(835397, 835397)
 The separate fits throughall the data points above and below T<missing VAR>C yield Csimeq C- and n<missing VAR>simeqn<missing VAR>-simeq 1. The obtained results corroborate the importance of fluctuationeffects in this material recently found (cond-mat/9812219) to dominate itsmagneto-thermopower behavior far beyond T<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 1.0, 'The', 0]

C
###Negative magnetoresistance in La(0.6)Y(0.1)Ca(0.3)MnO(3): Evidence for charge localization governed by the Curie-Weiss law|S. Sergeenkov,H. Bougrine,M. Ausloos,A. Gilabert###
(835401, 835401)
 The separate fits throughall the data points above and below T<missing VAR>C yield Csimeq C- and n<missing VAR>simeqn<missing VAR>-simeq 1. The obtained results corroborate the importance of fluctuationeffects in this material recently found (cond-mat/9812219) to dominate itsmagneto-thermopower behavior far beyond T<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 1.0, 'The', 0]

C
###Negative magnetoresistance in La(0.6)Y(0.1)Ca(0.3)MnO(3): Evidence for charge localization governed by the Curie-Weiss law|S. Sergeenkov,H. Bougrine,M. Ausloos,A. Gilabert###
(835404, 835404)
 The separate fits throughall the data points above and below T<missing VAR>C yield Csimeq C- and n<missing VAR>simeqn<missing VAR>-simeq 1. The obtained results corroborate the importance of fluctuationeffects in this material recently found (cond-mat/9812219) to dominate itsmagneto-thermopower behavior far beyond T<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 1.0, 'The', 0]

C
###Negative magnetoresistance in La(0.6)Y(0.1)Ca(0.3)MnO(3): Evidence for charge localization governed by the Curie-Weiss law|S. Sergeenkov,H. Bougrine,M. Ausloos,A. Gilabert###
(835471, 835471)
 The separate fits throughall the data points above and below T<missing VAR>C yield Csimeq C- and n<missing VAR>simeqn<missing VAR>-simeq 1. The obtained results corroborate the importance of fluctuationeffects in this material recently found (cond-mat/9812219) to dominate itsmagneto-thermopower behavior far beyond T<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 1.0, 'The', 0]

In
###Pseudogaps and Extrinsic Losses in Photoemission Experiments on Poorly Conducting Solids|Robert Joynt###
(835656, 835656)
 Inthese materials, the electric field of the photoelectron can penetrate thesystem.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Pseudogaps and Extrinsic Losses in Photoemission Experiments on Poorly Conducting Solids|Robert Joynt###
(835707, 835707)
 These losses can drastically affect the observed lineshape on the meVscale which is now observable due to improved resolution.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Pseudogaps and Extrinsic Losses in Photoemission Experiments on Poorly Conducting Solids|Robert Joynt###
(835729, 835729)
 In particular,extrinsic losses of this type can mimic pseudogap effects and other peculiarfeatures of photoemission in cubic manganates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.67Ca0.33MnO3
###Pseudogaps and Extrinsic Losses in Photoemission Experiments on Poorly Conducting Solids|Robert Joynt###
(835794, 835800)
 This general point isillustrated with the particular case of La0.67Ca0.33MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.066,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.134,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni81Fe19
###Dependence of Magnetic Anisotropy and Magnetoresistance of Ni81Fe19-Films on Annealing|T. Lorenz,A. Kaeufler,Y. Luo,M. Moske,K. Samwer###
(835825, 835828)
Dependence of Magnetic Anisotropy and Magnetoresistance of Ni81Fe19-Films on Annealing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.19,0,0.81,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 20, 'nm', 2],[182.0, 520, 'K', 3],[232.0, 700, 'K', 4],[242.0, 8, '%', 4],[256.0, 1.5, '%', 4]

Fe19
###Dependence of Magnetic Anisotropy and Magnetoresistance of Ni81Fe19-Films on Annealing|T. Lorenz,A. Kaeufler,Y. Luo,M. Moske,K. Samwer###
(835843, 835844)
 Permalloy (PyNi81Fe19) exhibits an anisotropic magnetoresistance (AMR) whichis very often used to read magnetic signals from storage devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 20, 'nm', 1],[166.0, 520, 'K', 2],[216.0, 700, 'K', 3],[226.0, 8, '%', 3],[240.0, 1.5, '%', 3]

Si
###Dependence of Magnetic Anisotropy and Magnetoresistance of Ni81Fe19-Films on Annealing|T. Lorenz,A. Kaeufler,Y. Luo,M. Moske,K. Samwer###
(835924, 835924)
 Py-films ofthickness 20nm were prepared by dc-magnetron sputtering in a magnetic fieldonto thermally oxidized Si-wafers and annealed ex situ at temperatures up to1000K in order to investigate the dependence of the magnetic anisotropy and theAMR on heat treatments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 20, 'nm', 0],[86.0, 520, 'K', 1],[136.0, 700, 'K', 2],[146.0, 8, '%', 2],[160.0, 1.5, '%', 2]

K
###Dependence of Magnetic Anisotropy and Magnetoresistance of Ni81Fe19-Films on Annealing|T. Lorenz,A. Kaeufler,Y. Luo,M. Moske,K. Samwer###
(835946, 835946)
 Py-films ofthickness 20nm were prepared by dc-magnetron sputtering in a magnetic fieldonto thermally oxidized Si-wafers and annealed ex situ at temperatures up to1000K in order to investigate the dependence of the magnetic anisotropy and theAMR on heat treatments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 20, 'nm', 0],[64.0, 520, 'K', 1],[114.0, 700, 'K', 2],[124.0, 8, '%', 2],[138.0, 1.5, '%', 2]

CPP
###Crossover between ballistic and diffusive regime of the spin-conductance and CPP-GMR in magnetic multilayered nanostructures|S. Sanvito,C. J. Lambert,J. H. Jefferson###
(836172, 836174)
Crossover between ballistic and diffusive regime of the spin-conductance and CPP-GMR in magnetic multilayered nanostructures.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(CPP)
###Crossover between ballistic and diffusive regime of the spin-conductance and CPP-GMR in magnetic multilayered nanostructures|S. Sanvito,C. J. Lambert,J. H. Jefferson###
(836220, 836224)
 We analyze the interplay between disorder and band structure in currentperpendicular to the planes (CPP) giant magnetoresistance (GMR).
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La
###Evidence for a Purely Double-Exchange Mechanism for the Anisotropic Conductivities in Layered La-Sr-Mn-O Single Crystals Below TC|Q. A. Li,K. E. Gray,J. F. Mitchell,A. Berger,R. Osgood###
(836539, 836539)
Evidence for a Purely Double-Exchange Mechanism for the Anisotropic Conductivities in Layered La-Sr-Mn-O Single Crystals Below T<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr
###Evidence for a Purely Double-Exchange Mechanism for the Anisotropic Conductivities in Layered La-Sr-Mn-O Single Crystals Below TC|Q. A. Li,K. E. Gray,J. F. Mitchell,A. Berger,R. Osgood###
(836541, 836541)
Evidence for a Purely Double-Exchange Mechanism for the Anisotropic Conductivities in Layered La-Sr-Mn-O Single Crystals Below T<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Evidence for a Purely Double-Exchange Mechanism for the Anisotropic Conductivities in Layered La-Sr-Mn-O Single Crystals Below TC|Q. A. Li,K. E. Gray,J. F. Mitchell,A. Berger,R. Osgood###
(836543, 836543)
Evidence for a Purely Double-Exchange Mechanism for the Anisotropic Conductivities in Layered La-Sr-Mn-O Single Crystals Below T<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Evidence for a Purely Double-Exchange Mechanism for the Anisotropic Conductivities in Layered La-Sr-Mn-O Single Crystals Below TC|Q. A. Li,K. E. Gray,J. F. Mitchell,A. Berger,R. Osgood###
(836545, 836545)
Evidence for a Purely Double-Exchange Mechanism for the Anisotropic Conductivities in Layered La-Sr-Mn-O Single Crystals Below T<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Evidence for a Purely Double-Exchange Mechanism for the Anisotropic Conductivities in Layered La-Sr-Mn-O Single Crystals Below TC|Q. A. Li,K. E. Gray,J. F. Mitchell,A. Berger,R. Osgood###
(836554, 836554)
Evidence for a Purely Double-Exchange Mechanism for the Anisotropic Conductivities in Layered La-Sr-Mn-O Single Crystals Below T<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Evidence for a Purely Double-Exchange Mechanism for the Anisotropic Conductivities in Layered La-Sr-Mn-O Single Crystals Below TC|Q. A. Li,K. E. Gray,J. F. Mitchell,A. Berger,R. Osgood###
(836602, 836602)
 Experimental evidence supports the double-exchange (DE) mechanism for bothin-plane and c<missing VAR>-axis conductivity in the colossal-magnetoresistive (CMR) layeredmanganite La1.4Sr1.6Mn2O7.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La1.4Sr1.6Mn2O7
###Evidence for a Purely Double-Exchange Mechanism for the Anisotropic Conductivities in Layered La-Sr-Mn-O Single Crystals Below TC|Q. A. Li,K. E. Gray,J. F. Mitchell,A. Berger,R. Osgood###
(836612, 836619)
 Experimental evidence supports the double-exchange (DE) mechanism for bothin-plane and c<missing VAR>-axis conductivity in the colossal-magnetoresistive (CMR) layeredmanganite La1.4Sr1.6Mn2O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0.13333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.11666666666666665,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Evidence for a Purely Double-Exchange Mechanism for the Anisotropic Conductivities in Layered La-Sr-Mn-O Single Crystals Below TC|Q. A. Li,K. E. Gray,J. F. Mitchell,A. Berger,R. Osgood###
(836625, 836625)
 Below T<missing VAR>C, the data determine both the DE andantiferromagnetic (AF) superexchange between bilayers.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Evidence for a Purely Double-Exchange Mechanism for the Anisotropic Conductivities in Layered La-Sr-Mn-O Single Crystals Below TC|Q. A. Li,K. E. Gray,J. F. Mitchell,A. Berger,R. Osgood###
(836648, 836648)
 Below T<missing VAR>C, the data determine both the DE andantiferromagnetic (AF) superexchange between bilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Evidence for a Purely Double-Exchange Mechanism for the Anisotropic Conductivities in Layered La-Sr-Mn-O Single Crystals Below TC|Q. A. Li,K. E. Gray,J. F. Mitchell,A. Berger,R. Osgood###
(836787, 836787)
 Theconductivity is shown to be proportional to the square of the measuredmagnetization over a wide range of fields and for temperatures below thein-plane ferromagnetic ordering temperature, T<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La1.2Sr1.8Mn2O7
###Evidence for a Purely Double-Exchange Mechanism for the Anisotropic Conductivities in Layered La-Sr-Mn-O Single Crystals Below TC|Q. A. Li,K. E. Gray,J. F. Mitchell,A. Berger,R. Osgood###
(836824, 836831)
 This dependence is shown to beconsistent with DE coupling and earlier zero-field studies of La1.2Sr1.8Mn2O7near T<missing VAR>C, which used neutron scattering for the local magnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.09999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Evidence for a Purely Double-Exchange Mechanism for the Anisotropic Conductivities in Layered La-Sr-Mn-O Single Crystals Below TC|Q. A. Li,K. E. Gray,J. F. Mitchell,A. Berger,R. Osgood###
(836837, 836837)
 This dependence is shown to beconsistent with DE coupling and earlier zero-field studies of La1.2Sr1.8Mn2O7near T<missing VAR>C, which used neutron scattering for the local magnetization.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Evidence for a Purely Double-Exchange Mechanism for the Anisotropic Conductivities in Layered La-Sr-Mn-O Single Crystals Below TC|Q. A. Li,K. E. Gray,J. F. Mitchell,A. Berger,R. Osgood###
(836862, 836862)
 A mixed AFand spin-flop state (similar to the intermediate state of type-Isuperconductors) is a rigorous prediction of the data and modeling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Evidence for a Purely Double-Exchange Mechanism for the Anisotropic Conductivities in Layered La-Sr-Mn-O Single Crystals Below TC|Q. A. Li,K. E. Gray,J. F. Mitchell,A. Berger,R. Osgood###
(836888, 836888)
 A mixed AFand spin-flop state (similar to the intermediate state of type-Isuperconductors) is a rigorous prediction of the data and modeling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Paramagnetic limiting of the upper critical field of the layered organic superconductor $κ-(BEDT-TTF)_2Cu(SCN)_2$|F. Zuo,J. S. Brooks,Ross H. McKenzie,J. A. Schlueter,Jack M. Williams###
(836947, 836947)
Paramagnetic limiting of the upper critical field of the layered organic superconductor -(BEDT-TTF)2Cu(SCN)2.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 0.5, 'K', 1],[85.0, 30, 'tesla', 1]

F
###Paramagnetic limiting of the upper critical field of the layered organic superconductor $κ-(BEDT-TTF)_2Cu(SCN)_2$|F. Zuo,J. S. Brooks,Ross H. McKenzie,J. A. Schlueter,Jack M. Williams###
(836954, 836954)
Paramagnetic limiting of the upper critical field of the layered organic superconductor -(BEDT-TTF)2Cu(SCN)2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 0.5, 'K', 1],[78.0, 30, 'tesla', 1]

Cu(SCN)2
###Paramagnetic limiting of the upper critical field of the layered organic superconductor $κ-(BEDT-TTF)_2Cu(SCN)_2$|F. Zuo,J. S. Brooks,Ross H. McKenzie,J. A. Schlueter,Jack M. Williams###
(836957, 836963)
Paramagnetic limiting of the upper critical field of the layered organic superconductor -(BEDT-TTF)2Cu(SCN)2.
Featurization terminated normally.
0,0,0,0,0,0.2857142857142857,0.2857142857142857,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 0.5, 'K', 1],[69.0, 30, 'tesla', 1]

B
###Paramagnetic limiting of the upper critical field of the layered organic superconductor $κ-(BEDT-TTF)_2Cu(SCN)_2$|F. Zuo,J. S. Brooks,Ross H. McKenzie,J. A. Schlueter,Jack M. Williams###
(836997, 836997)
 We report detailed measurements of the interlayer magnetoresistance of thelayered organic superconductor kappa -(BEDT-TTF)2Cu(SCN)2 for temperaturesdown to 0.5 K and fields up to 30 tesla.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 0.5, 'K', 0],[35.0, 30, 'tesla', 0]

F
###Paramagnetic limiting of the upper critical field of the layered organic superconductor $κ-(BEDT-TTF)_2Cu(SCN)_2$|F. Zuo,J. S. Brooks,Ross H. McKenzie,J. A. Schlueter,Jack M. Williams###
(837004, 837004)
 We report detailed measurements of the interlayer magnetoresistance of thelayered organic superconductor kappa -(BEDT-TTF)2Cu(SCN)2 for temperaturesdown to 0.5 K and fields up to 30 tesla.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 0.5, 'K', 0],[28.0, 30, 'tesla', 0]

Cu(SCN)2
###Paramagnetic limiting of the upper critical field of the layered organic superconductor $κ-(BEDT-TTF)_2Cu(SCN)_2$|F. Zuo,J. S. Brooks,Ross H. McKenzie,J. A. Schlueter,Jack M. Williams###
(837007, 837013)
 We report detailed measurements of the interlayer magnetoresistance of thelayered organic superconductor kappa -(BEDT-TTF)2Cu(SCN)2 for temperaturesdown to 0.5 K and fields up to 30 tesla.
Featurization terminated normally.
0,0,0,0,0,0.2857142857142857,0.2857142857142857,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 0.5, 'K', 0],[19.0, 30, 'tesla', 0]

BCS
###Paramagnetic limiting of the upper critical field of the layered organic superconductor $κ-(BEDT-TTF)_2Cu(SCN)_2$|F. Zuo,J. S. Brooks,Ross H. McKenzie,J. A. Schlueter,Jack M. Williams###
(837222, 837224)
 The measured value is comparable to a value for theparamagnetic limit calculated from thermodynamic quantities but exceeds thelimit calculated from BCS theory.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[199.0, 0.5, 'K', 4],[190.0, 30, 'tesla', 4]

GaAs/AlGaAs
###On the Relation between Interband Scattering and the "Metallic Phase" of Two Dimensional Holes in GaAs/AlGaAs|Yuval Yaish,Oleg Prus,Evgeny Buchstab,Shye Shapira,Gidi Ben Yoseph,Uri Sivan,Ady Stern###
(837317, 837322)
On the Relation between Interband Scattering and the Metallic Phase of Two Dimensional Holes in GaAs/AlGaAs.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

GaAs/AlGaAs
###On the Relation between Interband Scattering and the "Metallic Phase" of Two Dimensional Holes in GaAs/AlGaAs|Yuval Yaish,Oleg Prus,Evgeny Buchstab,Shye Shapira,Gidi Ben Yoseph,Uri Sivan,Ady Stern###
(837337, 837342)
 The metallic regime of holes in GaAs/AlGaAs heterostructures corresponds todensities where two splitted heavy hole bands exist at a zero magnetic field.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

(S)
###New approach to analysis of negative magnetoresistance. The statistics of the closed paths|G. M. Minkov,S. A. Negashev,O. E. Rut,A. V. Germanenko,O. I. Khrykin,V. I. Shashkin,V. M. Danil'tsev###
(837776, 837778)
The procedure proposed provides the information on the area distributionfunction of the closed paths and on the area dependence of the mean length ofclosed paths barL<missing VAR> (S) .
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 2, 'D', 1],[62.0, 2, 'D', 2]

In
###New approach to analysis of negative magnetoresistance. The statistics of the closed paths|G. M. Minkov,S. A. Negashev,O. E. Rut,A. V. Germanenko,O. I. Khrykin,V. I. Shashkin,V. M. Danil'tsev###
(837845, 837845)
 In previous version (cond-mat/9902038) wesuppoused that the difference in area dependence of barL<missing VAR> (S) forstructures investigated came from the difference in scattering ansotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 2, 'D', 4],[5.0, 2, 'D', 1]

(S)
###New approach to analysis of negative magnetoresistance. The statistics of the closed paths|G. M. Minkov,S. A. Negashev,O. E. Rut,A. V. Germanenko,O. I. Khrykin,V. I. Shashkin,V. M. Danil'tsev###
(837881, 837883)
 In previous version (cond-mat/9902038) wesuppoused that the difference in area dependence of barL<missing VAR> (S) forstructures investigated came from the difference in scattering ansotropy.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[172.0, 2, 'D', 4],[41.0, 2, 'D', 1]

AlGaAs/GaAs
###Weak localisation in AlGaAs/GaAs p-type quantum wells|S. Pedersen,C. B. Sorensen,A. Kristensen,P. E. Lindelof,L. E. Golub,N. S. Averkiev###
(837964, 837969)
Weak localisation in AlGaAs/GaAs p<missing VAR>-type quantum wells.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

AlGaAs/GaAs
###Weak localisation in AlGaAs/GaAs p-type quantum wells|S. Pedersen,C. B. Sorensen,A. Kristensen,P. E. Lindelof,L. E. Golub,N. S. Averkiev###
(838009, 838014)
 We have for the first time experimentally investigated the weak localisationmagnetoresistance in a AlGaAs/GaAs p<missing VAR>-type quantum well.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

In
###Weak localisation in AlGaAs/GaAs p-type quantum wells|S. Pedersen,C. B. Sorensen,A. Kristensen,P. E. Lindelof,L. E. Golub,N. S. Averkiev###
(838111, 838111)
 In this letter wecompare the experimental results with a newly developed diffusion theory, whichexplicitly describes the weak localisation regime when the spin-orbit couplingis strong.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.67Ca0.33MnO3
###Current dependence of grain boundary magnetoresistance in La_0.67Ca_0.33MnO_3 films|W. Westerburg,F. Martin,S. Friedrich,M. Maier,G. Jakob###
(838259, 838265)
Current dependence of grain boundary magnetoresistance in La0.67Ca0.33MnO3 films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.066,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.134,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 70, '%', 3]

At
###Current dependence of grain boundary magnetoresistance in La_0.67Ca_0.33MnO_3 films|W. Westerburg,F. Martin,S. Friedrich,M. Maier,G. Jakob###
(838341, 838341)
 At lowtemperatures hysteretic changes in resistivity up to 70% due to switching ofmagnetic domains at the coercitive field are observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 70, '%', 0]

Nd0.52Sr0.48MnO3
###Comment on ``Spin Dependent Hopping and Colossal Negative Magnetoresistance in Epitaxial $Nd_{0.52}Sr_{0.48}MnO_{3}$ Films in Fields up to 50 T''|Sudhakar Yarlagadda###
(838555, 838561)
Comment on Spin Dependent Hopping and Colossal Negative Magnetoresistance in Epitaxial Nd0.52Sr0.48MnO3 Films in Fields up to 50 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.096,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.10400000000000001,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 50, 'T', 0],[36.0, 81, ',', 6]

P
###Comment on ``Spin Dependent Hopping and Colossal Negative Magnetoresistance in Epitaxial $Nd_{0.52}Sr_{0.48}MnO_{3}$ Films in Fields up to 50 T''|Sudhakar Yarlagadda###
(838600, 838600)
 81, P.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 50, 'T', 6],[3.0, 81, ',', 0]

B
###Comment on ``Spin Dependent Hopping and Colossal Negative Magnetoresistance in Epitaxial $Nd_{0.52}Sr_{0.48}MnO_{3}$ Films in Fields up to 50 T''|Sudhakar Yarlagadda###
(838731, 838731)
 They further claimed that using themodel they can explain the observed scaling behavior--negative-magnetoresistivity scaling proportional to the Brillouin functioncalB in the ferromagnetic state and to calB2 in the paramagneticstate.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[159.0, 50, 'T', 8],[134.0, 81, ',', 2]

B2
###Comment on ``Spin Dependent Hopping and Colossal Negative Magnetoresistance in Epitaxial $Nd_{0.52}Sr_{0.48}MnO_{3}$ Films in Fields up to 50 T''|Sudhakar Yarlagadda###
(838746, 838747)
 They further claimed that using themodel they can explain the observed scaling behavior--negative-magnetoresistivity scaling proportional to the Brillouin functioncalB in the ferromagnetic state and to calB2 in the paramagneticstate.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[174.0, 50, 'T', 8],[149.0, 81, ',', 2]

In
###Comment on ``Spin Dependent Hopping and Colossal Negative Magnetoresistance in Epitaxial $Nd_{0.52}Sr_{0.48}MnO_{3}$ Films in Fields up to 50 T''|Sudhakar Yarlagadda###
(838759, 838759)
 In this comment we argue that the modification needed for Motts<missing VAR>original model is different from that proposed by Wagner et al.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[187.0, 50, 'T', 9],[162.0, 81, ',', 3]

La1-x
###Two ferromagnetic phases in La1-xSrxMnO3(x ~1/8)|H. Nojiri,K. Kaneko,M. Motokawa,K. Hirota,K. Takahashi,Y. Endoh###
(838857, 838860)
Two ferromagnetic phases in La1-xSrxMnO3(x<missing VAR> 1/8).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

O3
###Two ferromagnetic phases in La1-xSrxMnO3(x ~1/8)|H. Nojiri,K. Kaneko,M. Motokawa,K. Hirota,K. Takahashi,Y. Endoh###
(838863, 838864)
Two ferromagnetic phases in La1-xSrxMnO3(x<missing VAR> 1/8).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La1-x
###Two ferromagnetic phases in La1-xSrxMnO3(x ~1/8)|H. Nojiri,K. Kaneko,M. Motokawa,K. Hirota,K. Takahashi,Y. Endoh###
(838882, 838885)
 It was discovered in La1-xSrxMnO3(x<missing VAR>1/8) that a field induced phasetransition occurs from a ferromagnetic metal(FM) phase to a ferromagneticinsulator (FI) phase.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

O3
###Two ferromagnetic phases in La1-xSrxMnO3(x ~1/8)|H. Nojiri,K. Kaneko,M. Motokawa,K. Hirota,K. Takahashi,Y. Endoh###
(838888, 838889)
 It was discovered in La1-xSrxMnO3(x<missing VAR>1/8) that a field induced phasetransition occurs from a ferromagnetic metal(FM) phase to a ferromagneticinsulator (FI) phase.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Two ferromagnetic phases in La1-xSrxMnO3(x ~1/8)|H. Nojiri,K. Kaneko,M. Motokawa,K. Hirota,K. Takahashi,Y. Endoh###
(838920, 838920)
 It was discovered in La1-xSrxMnO3(x<missing VAR>1/8) that a field induced phasetransition occurs from a ferromagnetic metal(FM) phase to a ferromagneticinsulator (FI) phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(FI)
###Two ferromagnetic phases in La1-xSrxMnO3(x ~1/8)|H. Nojiri,K. Kaneko,M. Motokawa,K. Hirota,K. Takahashi,Y. Endoh###
(838935, 838938)
 It was discovered in La1-xSrxMnO3(x<missing VAR>1/8) that a field induced phasetransition occurs from a ferromagnetic metal(FM) phase to a ferromagneticinsulator (FI) phase.
Featurization successful!
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FI
###Two ferromagnetic phases in La1-xSrxMnO3(x ~1/8)|H. Nojiri,K. Kaneko,M. Motokawa,K. Hirota,K. Takahashi,Y. Endoh###
(839047, 839048)
 These results evidently show that the FI phase with a pseudo cubicsymmetry is more stable in high fields than the FM<missing VAR> phase due to the doubleexchange interaction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Two ferromagnetic phases in La1-xSrxMnO3(x ~1/8)|H. Nojiri,K. Kaneko,M. Motokawa,K. Hirota,K. Takahashi,Y. Endoh###
(839079, 839079)
 These results evidently show that the FI phase with a pseudo cubicsymmetry is more stable in high fields than the FM<missing VAR> phase due to the doubleexchange interaction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Sr2CuO
###Negative Magnetoresistance of Bi_2Sr_2CuO_x Single Crystals in a Strong Magnetic Fields|S. I. Vedeneev,A. G. M. Jansen,B. A. Volkov,P. Wyder###
(839498, 839503)
Negative Magnetoresistance of Bi2Sr2CuOx<missing VAR> Single Crystals in a Strong Magnetic Fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 28, 'T', 1],[133.0, 60, '%', 2],[271.0, 2, 'D', 5]

Bi2Sr2CuO
###Negative Magnetoresistance of Bi_2Sr_2CuO_x Single Crystals in a Strong Magnetic Fields|S. I. Vedeneev,A. G. M. Jansen,B. A. Volkov,P. Wyder###
(839564, 839569)
 Magnetoresistance (MR) in the out-of-plane resistivity rhoc<missing VAR> for thenormal state of the one-layer high-quality Bi2Sr2CuOx<missing VAR> single crystals undervarious dc magnetic fields up to 28 T over the temperature region 6-100 K hasbeen measured.
Featurization terminated normally.
0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 28, 'T', 0],[67.0, 60, '%', 1],[205.0, 2, 'D', 4]

K
###Negative Magnetoresistance of Bi_2Sr_2CuO_x Single Crystals in a Strong Magnetic Fields|S. I. Vedeneev,A. G. M. Jansen,B. A. Volkov,P. Wyder###
(839604, 839604)
 Magnetoresistance (MR) in the out-of-plane resistivity rhoc<missing VAR> for thenormal state of the one-layer high-quality Bi2Sr2CuOx<missing VAR> single crystals undervarious dc magnetic fields up to 28 T over the temperature region 6-100 K hasbeen measured.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 28, 'T', 0],[32.0, 60, '%', 1],[170.0, 2, 'D', 4]

At
###Negative Magnetoresistance of Bi_2Sr_2CuO_x Single Crystals in a Strong Magnetic Fields|S. I. Vedeneev,A. G. M. Jansen,B. A. Volkov,P. Wyder###
(839640, 839640)
 At low temperatures the normal-state MR in contrast to the MR in mixedstate is independent of the direction of the current relatively to the fielddirection suggesting uniquely the spin dominated origin of that.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 28, 'T', 2],[4.0, 60, '%', 1],[134.0, 2, 'D', 2]

CuO2
###Negative Magnetoresistance of Bi_2Sr_2CuO_x Single Crystals in a Strong Magnetic Fields|S. I. Vedeneev,A. G. M. Jansen,B. A. Volkov,P. Wyder###
(839797, 839799)
 We interpret theactivated form of rhoc<missing VAR> and the negative MR in terms of 2D stackedalternating metallic and dielectric layers assuming the tunneling between CuO2planes.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[207.0, 28, 'T', 4],[161.0, 60, '%', 3],[23.0, 2, 'D', 0]

CuO2
###Negative Magnetoresistance of Bi_2Sr_2CuO_x Single Crystals in a Strong Magnetic Fields|S. I. Vedeneev,A. G. M. Jansen,B. A. Volkov,P. Wyder###
(839815, 839817)
 If the main fluctuations inside CuO2 planes have magnetic origin, themagnetic field suppresses these fluctuations leading to the uniform spinorientation.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[225.0, 28, 'T', 5],[179.0, 60, '%', 4],[41.0, 2, 'D', 1]

In
###Negative Magnetoresistance of Bi_2Sr_2CuO_x Single Crystals in a Strong Magnetic Fields|S. I. Vedeneev,A. G. M. Jansen,B. A. Volkov,P. Wyder###
(839855, 839855)
 In this case the interlayer current will be enhanced well.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[265.0, 28, 'T', 6],[219.0, 60, '%', 5],[81.0, 2, 'D', 2]

CPP
###Magnetoresistance of magnetic multilayers in the CPP mode:evidence for non-local scattering|Didier Bozec,M. A. Howson,B. J. Hickey,Smadar Shatz,Nathan Wiser###
(839896, 839898)
Magnetoresistance of magnetic multilayers in the CPP modeevidence for non-local scattering.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(H)
###Magnetoresistance of magnetic multilayers in the CPP mode:evidence for non-local scattering|Didier Bozec,M. A. Howson,B. J. Hickey,Smadar Shatz,Nathan Wiser###
(839930, 839932)
 We have carried out measurements of the magnetoresistance MR(H) in the CPP(Current Perpendicular to the Plane) mode for two types of magnetic multilayerswhich have different layer ordering.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CPP
###Magnetoresistance of magnetic multilayers in the CPP mode:evidence for non-local scattering|Didier Bozec,M. A. Howson,B. J. Hickey,Smadar Shatz,Nathan Wiser###
(839938, 839940)
 We have carried out measurements of the magnetoresistance MR(H) in the CPP(Current Perpendicular to the Plane) mode for two types of magnetic multilayerswhich have different layer ordering.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CPP
###Magnetoresistance of magnetic multilayers in the CPP mode:evidence for non-local scattering|Didier Bozec,M. A. Howson,B. J. Hickey,Smadar Shatz,Nathan Wiser###
(839994, 839996)
 The series resistor model predicts thatCPP MR(H) is independent of the ordering of the layers.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(H)
###Magnetoresistance of magnetic multilayers in the CPP mode:evidence for non-local scattering|Didier Bozec,M. A. Howson,B. J. Hickey,Smadar Shatz,Nathan Wiser###
(840000, 840002)
 The series resistor model predicts thatCPP MR(H) is independent of the ordering of the layers.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(H)
###Magnetoresistance of magnetic multilayers in the CPP mode:evidence for non-local scattering|Didier Bozec,M. A. Howson,B. J. Hickey,Smadar Shatz,Nathan Wiser###
(840031, 840033)
 Nevertheless, themeasured MR(H) curves were found to be completely different for the followingtwo configurations[Co(1nm)/Cu(20nm)/Co(6nm)/Cu(20nm)]N and[Co(1nm)/Cu(20nm)]N[Co(6nm)/Cu(20nm)]N showing that the above model isincorrect.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Magnetoresistance of magnetic multilayers in the CPP mode:evidence for non-local scattering|Didier Bozec,M. A. Howson,B. J. Hickey,Smadar Shatz,Nathan Wiser###
(840084, 840084)
 Nevertheless, themeasured MR(H) curves were found to be completely different for the followingtwo configurations[Co(1nm)/Cu(20nm)/Co(6nm)/Cu(20nm)]N and[Co(1nm)/Cu(20nm)]N[Co(6nm)/Cu(20nm)]N showing that the above model isincorrect.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Magnetoresistance of magnetic multilayers in the CPP mode:evidence for non-local scattering|Didier Bozec,M. A. Howson,B. J. Hickey,Smadar Shatz,Nathan Wiser###
(840102, 840102)
 Nevertheless, themeasured MR(H) curves were found to be completely different for the followingtwo configurations[Co(1nm)/Cu(20nm)/Co(6nm)/Cu(20nm)]N and[Co(1nm)/Cu(20nm)]N[Co(6nm)/Cu(20nm)]N showing that the above model isincorrect.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Magnetoresistance of magnetic multilayers in the CPP mode:evidence for non-local scattering|Didier Bozec,M. A. Howson,B. J. Hickey,Smadar Shatz,Nathan Wiser###
(840116, 840116)
 Nevertheless, themeasured MR(H) curves were found to be completely different for the followingtwo configurations[Co(1nm)/Cu(20nm)/Co(6nm)/Cu(20nm)]N and[Co(1nm)/Cu(20nm)]N[Co(6nm)/Cu(20nm)]N showing that the above model isincorrect.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YBa2Cu3O6
###Magnetoresistance in Heavily Underdoped YBa_2Cu_3O_{6+x}: Antiferromagnetic Correlations and Normal-State Transport|A. N. Lavrov,Yoichi Ando,Kouji Segawa,J. Takeya###
(840233, 840239)
Magnetoresistance in Heavily Underdoped YBa2Cu3O6x<missing VAR> Antiferromagnetic Correlations and Normal-State Transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Magnetoresistance in Heavily Underdoped YBa_2Cu_3O_{6+x}: Antiferromagnetic Correlations and Normal-State Transport|A. N. Lavrov,Yoichi Ando,Kouji Segawa,J. Takeya###
(840301, 840301)
 We report on a contrasting behavior of the in-plane and out-of-planemagnetoresistance (MR) in heavily underdoped antiferromagnetic (AF)YBa2Cu3O6x<missing VAR> (x<missing VAR><0.37).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YBa2Cu3O6
###Magnetoresistance in Heavily Underdoped YBa_2Cu_3O_{6+x}: Antiferromagnetic Correlations and Normal-State Transport|A. N. Lavrov,Yoichi Ando,Kouji Segawa,J. Takeya###
(840305, 840311)
 We report on a contrasting behavior of the in-plane and out-of-planemagnetoresistance (MR) in heavily underdoped antiferromagnetic (AF)YBa2Cu3O6x<missing VAR> (x<missing VAR><0.37).
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Magnetoresistance in Heavily Underdoped YBa_2Cu_3O_{6+x}: Antiferromagnetic Correlations and Normal-State Transport|A. N. Lavrov,Yoichi Ando,Kouji Segawa,J. Takeya###
(840333, 840333)
 The out-of-plane MR (I//c) is positive over most ofthe temperature range and shows a sharp increase, by about two orders ofmagnitude, upon cooling through the Neel temperature T<missing VAR>N.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Magnetoresistance in Heavily Underdoped YBa_2Cu_3O_{6+x}: Antiferromagnetic Correlations and Normal-State Transport|A. N. Lavrov,Yoichi Ando,Kouji Segawa,J. Takeya###
(840394, 840394)
 The out-of-plane MR (I//c) is positive over most ofthe temperature range and shows a sharp increase, by about two orders ofmagnitude, upon cooling through the Neel temperature T<missing VAR>N.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Magnetoresistance in Heavily Underdoped YBa_2Cu_3O_{6+x}: Antiferromagnetic Correlations and Normal-State Transport|A. N. Lavrov,Yoichi Ando,Kouji Segawa,J. Takeya###
(840409, 840409)
 A contributionassociated with the AF correlations is found to dominate the out-of-plane MRbehavior for H//c<missing VAR> from far above T<missing VAR>N, pointing to the key role of spinfluctuations in the out-of-plane transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Magnetoresistance in Heavily Underdoped YBa_2Cu_3O_{6+x}: Antiferromagnetic Correlations and Normal-State Transport|A. N. Lavrov,Yoichi Ando,Kouji Segawa,J. Takeya###
(840437, 840437)
 A contributionassociated with the AF correlations is found to dominate the out-of-plane MRbehavior for H//c<missing VAR> from far above T<missing VAR>N, pointing to the key role of spinfluctuations in the out-of-plane transport.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Magnetoresistance in Heavily Underdoped YBa_2Cu_3O_{6+x}: Antiferromagnetic Correlations and Normal-State Transport|A. N. Lavrov,Yoichi Ando,Kouji Segawa,J. Takeya###
(840449, 840449)
 A contributionassociated with the AF correlations is found to dominate the out-of-plane MRbehavior for H//c<missing VAR> from far above T<missing VAR>N, pointing to the key role of spinfluctuations in the out-of-plane transport.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magnetoresistance in Heavily Underdoped YBa_2Cu_3O_{6+x}: Antiferromagnetic Correlations and Normal-State Transport|A. N. Lavrov,Yoichi Ando,Kouji Segawa,J. Takeya###
(840482, 840482)
 In contrast, the transversein-plane MR (I//a(b);H//c) appears to be small and smooth through T<missing VAR>N, implyingthat the development of the AF order has little effect on the in-planeresistivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Magnetoresistance in Heavily Underdoped YBa_2Cu_3O_{6+x}: Antiferromagnetic Correlations and Normal-State Transport|A. N. Lavrov,Yoichi Ando,Kouji Segawa,J. Takeya###
(840500, 840500)
 In contrast, the transversein-plane MR (I//a(b);H//c) appears to be small and smooth through T<missing VAR>N, implyingthat the development of the AF order has little effect on the in-planeresistivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Magnetoresistance in Heavily Underdoped YBa_2Cu_3O_{6+x}: Antiferromagnetic Correlations and Normal-State Transport|A. N. Lavrov,Yoichi Ando,Kouji Segawa,J. Takeya###
(840508, 840508)
 In contrast, the transversein-plane MR (I//a(b);H//c) appears to be small and smooth through T<missing VAR>N, implyingthat the development of the AF order has little effect on the in-planeresistivity.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Magnetoresistance in Heavily Underdoped YBa_2Cu_3O_{6+x}: Antiferromagnetic Correlations and Normal-State Transport|A. N. Lavrov,Yoichi Ando,Kouji Segawa,J. Takeya###
(840529, 840529)
 In contrast, the transversein-plane MR (I//a(b);H//c) appears to be small and smooth through T<missing VAR>N, implyingthat the development of the AF order has little effect on the in-planeresistivity.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Magnetoresistance in Heavily Underdoped YBa_2Cu_3O_{6+x}: Antiferromagnetic Correlations and Normal-State Transport|A. N. Lavrov,Yoichi Ando,Kouji Segawa,J. Takeya###
(840546, 840546)
 In contrast, the transversein-plane MR (I//a(b);H//c) appears to be small and smooth through T<missing VAR>N, implyingthat the development of the AF order has little effect on the in-planeresistivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sn
###Sn delta-doping in GaAs|V. A. Kulbachinskii,V. G. Kytin,R. A. Lunin,A. V. Golikov,V. G. Mokerov,A. S. Bugaev,A. P. Senichkin,R. T. F. van Schaijk,A. de Visser,P. M. Koenraad###
(840576, 840576)
Sn delta-doping in GaAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 38, 'T', 2],[185.0, 8.4, 'x', 4]

GaAs
###Sn delta-doping in GaAs|V. A. Kulbachinskii,V. G. Kytin,R. A. Lunin,A. V. Golikov,V. G. Mokerov,A. S. Bugaev,A. P. Senichkin,R. T. F. van Schaijk,A. de Visser,P. M. Koenraad###
(840584, 840585)
Sn delta-doping in GaAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 38, 'T', 2],[176.0, 8.4, 'x', 4]

GaAs
###Sn delta-doping in GaAs|V. A. Kulbachinskii,V. G. Kytin,R. A. Lunin,A. V. Golikov,V. G. Mokerov,A. S. Bugaev,A. P. Senichkin,R. T. F. van Schaijk,A. de Visser,P. M. Koenraad###
(840600, 840601)
 We have prepared a number of GaAs structures delta-doped by Sn using thewell-known molecular beam epitaxy growth technique.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 38, 'T', 1],[160.0, 8.4, 'x', 3]

Sn
###Sn delta-doping in GaAs|V. A. Kulbachinskii,V. G. Kytin,R. A. Lunin,A. V. Golikov,V. G. Mokerov,A. S. Bugaev,A. P. Senichkin,R. T. F. van Schaijk,A. de Visser,P. M. Koenraad###
(840611, 840611)
 We have prepared a number of GaAs structures delta-doped by Sn using thewell-known molecular beam epitaxy growth technique.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 38, 'T', 1],[150.0, 8.4, 'x', 3]

Sn
###Sn delta-doping in GaAs|V. A. Kulbachinskii,V. G. Kytin,R. A. Lunin,A. V. Golikov,V. G. Mokerov,A. S. Bugaev,A. P. Senichkin,R. T. F. van Schaijk,A. de Visser,P. M. Koenraad###
(840650, 840650)
 The samples obtained for awide range of Sn doping densities were characterised by magnetotransportexperiments at low temperatures and in high magnetic fields up to 38 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 38, 'T', 0],[111.0, 8.4, 'x', 2]

Si
###Sn delta-doping in GaAs|V. A. Kulbachinskii,V. G. Kytin,R. A. Lunin,A. V. Golikov,V. G. Mokerov,A. S. Bugaev,A. P. Senichkin,R. T. F. van Schaijk,A. de Visser,P. M. Koenraad###
(840734, 840734)
Hall-effect and Shubnikov-de Haas measurements show that the electron densitiesreached are higher than for other delta-dopants, like Si and Be.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 38, 'T', 1],[27.0, 8.4, 'x', 1]

Be
###Sn delta-doping in GaAs|V. A. Kulbachinskii,V. G. Kytin,R. A. Lunin,A. V. Golikov,V. G. Mokerov,A. S. Bugaev,A. P. Senichkin,R. T. F. van Schaijk,A. de Visser,P. M. Koenraad###
(840738, 840738)
Hall-effect and Shubnikov-de Haas measurements show that the electron densitiesreached are higher than for other delta-dopants, like Si and Be.
Featurization terminated normally.
0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 38, 'T', 1],[23.0, 8.4, 'x', 1]

Bi2
###The irreversibility line of overdoped Bi_{2+x}Sr_{2-(x+y)}Cu_{1+y}O_{6 +- delta} at ultra-low temperatures and high magnetic fields|A. Morello,A. G. M. Jansen,R. S. Gonnelli,S. I. Vedeneev###
(840944, 840945)
The irreversibility line of overdoped Bi2x<missing VAR>Sr2-(xy)Cu1y<missing VAR>O6 - delta at ultra-low temperatures and high magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr2
###The irreversibility line of overdoped Bi_{2+x}Sr_{2-(x+y)}Cu_{1+y}O_{6 +- delta} at ultra-low temperatures and high magnetic fields|A. Morello,A. G. M. Jansen,R. S. Gonnelli,S. I. Vedeneev###
(840947, 840948)
The irreversibility line of overdoped Bi2x<missing VAR>Sr2-(xy)Cu1y<missing VAR>O6 - delta at ultra-low temperatures and high magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu1
###The irreversibility line of overdoped Bi_{2+x}Sr_{2-(x+y)}Cu_{1+y}O_{6 +- delta} at ultra-low temperatures and high magnetic fields|A. Morello,A. G. M. Jansen,R. S. Gonnelli,S. I. Vedeneev###
(840954, 840955)
The irreversibility line of overdoped Bi2x<missing VAR>Sr2-(xy)Cu1y<missing VAR>O6 - delta at ultra-low temperatures and high magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O6
###The irreversibility line of overdoped Bi_{2+x}Sr_{2-(x+y)}Cu_{1+y}O_{6 +- delta} at ultra-low temperatures and high magnetic fields|A. Morello,A. G. M. Jansen,R. S. Gonnelli,S. I. Vedeneev###
(840957, 840958)
The irreversibility line of overdoped Bi2x<missing VAR>Sr2-(xy)Cu1y<missing VAR>O6 - delta at ultra-low temperatures and high magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2
###The irreversibility line of overdoped Bi_{2+x}Sr_{2-(x+y)}Cu_{1+y}O_{6 +- delta} at ultra-low temperatures and high magnetic fields|A. Morello,A. G. M. Jansen,R. S. Gonnelli,S. I. Vedeneev###
(841001, 841002)
 The irreversible magnetization of the layered high-Tc superconductorBi2x<missing VAR>Sr2-(xy)Cu1y<missing VAR>O6 - delta (Bi-2201) has been measured by meansof a capacitive torquemeter up to B28 T<missing VAR> and down to T<missing VAR>60 m<missing VAR>K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr2
###The irreversibility line of overdoped Bi_{2+x}Sr_{2-(x+y)}Cu_{1+y}O_{6 +- delta} at ultra-low temperatures and high magnetic fields|A. Morello,A. G. M. Jansen,R. S. Gonnelli,S. I. Vedeneev###
(841004, 841005)
 The irreversible magnetization of the layered high-Tc superconductorBi2x<missing VAR>Sr2-(xy)Cu1y<missing VAR>O6 - delta (Bi-2201) has been measured by meansof a capacitive torquemeter up to B28 T<missing VAR> and down to T<missing VAR>60 m<missing VAR>K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu1
###The irreversibility line of overdoped Bi_{2+x}Sr_{2-(x+y)}Cu_{1+y}O_{6 +- delta} at ultra-low temperatures and high magnetic fields|A. Morello,A. G. M. Jansen,R. S. Gonnelli,S. I. Vedeneev###
(841011, 841012)
 The irreversible magnetization of the layered high-Tc superconductorBi2x<missing VAR>Sr2-(xy)Cu1y<missing VAR>O6 - delta (Bi-2201) has been measured by meansof a capacitive torquemeter up to B28 T<missing VAR> and down to T<missing VAR>60 m<missing VAR>K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O6
###The irreversibility line of overdoped Bi_{2+x}Sr_{2-(x+y)}Cu_{1+y}O_{6 +- delta} at ultra-low temperatures and high magnetic fields|A. Morello,A. G. M. Jansen,R. S. Gonnelli,S. I. Vedeneev###
(841014, 841015)
 The irreversible magnetization of the layered high-Tc superconductorBi2x<missing VAR>Sr2-(xy)Cu1y<missing VAR>O6 - delta (Bi-2201) has been measured by meansof a capacitive torquemeter up to B28 T<missing VAR> and down to T<missing VAR>60 m<missing VAR>K.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi
###The irreversibility line of overdoped Bi_{2+x}Sr_{2-(x+y)}Cu_{1+y}O_{6 +- delta} at ultra-low temperatures and high magnetic fields|A. Morello,A. G. M. Jansen,R. S. Gonnelli,S. I. Vedeneev###
(841022, 841022)
 The irreversible magnetization of the layered high-Tc superconductorBi2x<missing VAR>Sr2-(xy)Cu1y<missing VAR>O6 - delta (Bi-2201) has been measured by meansof a capacitive torquemeter up to B28 T<missing VAR> and down to T<missing VAR>60 m<missing VAR>K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B28
###The irreversibility line of overdoped Bi_{2+x}Sr_{2-(x+y)}Cu_{1+y}O_{6 +- delta} at ultra-low temperatures and high magnetic fields|A. Morello,A. G. M. Jansen,R. S. Gonnelli,S. I. Vedeneev###
(841050, 841051)
 The irreversible magnetization of the layered high-Tc superconductorBi2x<missing VAR>Sr2-(xy)Cu1y<missing VAR>O6 - delta (Bi-2201) has been measured by meansof a capacitive torquemeter up to B28 T<missing VAR> and down to T<missing VAR>60 m<missing VAR>K.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###The irreversibility line of overdoped Bi_{2+x}Sr_{2-(x+y)}Cu_{1+y}O_{6 +- delta} at ultra-low temperatures and high magnetic fields|A. Morello,A. G. M. Jansen,R. S. Gonnelli,S. I. Vedeneev###
(841065, 841065)
 The irreversible magnetization of the layered high-Tc superconductorBi2x<missing VAR>Sr2-(xy)Cu1y<missing VAR>O6 - delta (Bi-2201) has been measured by meansof a capacitive torquemeter up to B28 T<missing VAR> and down to T<missing VAR>60 m<missing VAR>K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

No
###The irreversibility line of overdoped Bi_{2+x}Sr_{2-(x+y)}Cu_{1+y}O_{6 +- delta} at ultra-low temperatures and high magnetic fields|A. Morello,A. G. M. Jansen,R. S. Gonnelli,S. I. Vedeneev###
(841068, 841068)
 No magnetizationjumps, peak effects or crossovers between different pinning mechanisms appearto be present.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0
Abstract does not contain any numbers.

B
###The irreversibility line of overdoped Bi_{2+x}Sr_{2-(x+y)}Cu_{1+y}O_{6 +- delta} at ultra-low temperatures and high magnetic fields|A. Morello,A. G. M. Jansen,R. S. Gonnelli,S. I. Vedeneev###
(841110, 841110)
 The deduced irreversibility field Birr can not be describedby the law Birr(T)Birr(0)(1-T/Tc)n<missing VAR> based on flux creep, but anexcellent agreement is found with the analytical form of the melting line ofthe flux lattice as calculated from the Lindemann criterion.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###The irreversibility line of overdoped Bi_{2+x}Sr_{2-(x+y)}Cu_{1+y}O_{6 +- delta} at ultra-low temperatures and high magnetic fields|A. Morello,A. G. M. Jansen,R. S. Gonnelli,S. I. Vedeneev###
(841128, 841128)
 The deduced irreversibility field Birr can not be describedby the law Birr(T)Birr(0)(1-T/Tc)n<missing VAR> based on flux creep, but anexcellent agreement is found with the analytical form of the melting line ofthe flux lattice as calculated from the Lindemann criterion.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###The irreversibility line of overdoped Bi_{2+x}Sr_{2-(x+y)}Cu_{1+y}O_{6 +- delta} at ultra-low temperatures and high magnetic fields|A. Morello,A. G. M. Jansen,R. S. Gonnelli,S. I. Vedeneev###
(841133, 841133)
 The deduced irreversibility field Birr can not be describedby the law Birr(T)Birr(0)(1-T/Tc)n<missing VAR> based on flux creep, but anexcellent agreement is found with the analytical form of the melting line ofthe flux lattice as calculated from the Lindemann criterion.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###The irreversibility line of overdoped Bi_{2+x}Sr_{2-(x+y)}Cu_{1+y}O_{6 +- delta} at ultra-low temperatures and high magnetic fields|A. Morello,A. G. M. Jansen,R. S. Gonnelli,S. I. Vedeneev###
(841215, 841215)
 The behavior ofBirr(T) obtained here is very similar to the resistive critical field of aBi-2201 thin film, suggesting that magnetoresistive experiments are likely tobe strongly influenced by flux lattice melting.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi
###The irreversibility line of overdoped Bi_{2+x}Sr_{2-(x+y)}Cu_{1+y}O_{6 +- delta} at ultra-low temperatures and high magnetic fields|A. Morello,A. G. M. Jansen,R. S. Gonnelli,S. I. Vedeneev###
(841246, 841246)
 The behavior ofBirr(T) obtained here is very similar to the resistive critical field of aBi-2201 thin film, suggesting that magnetoresistive experiments are likely tobe strongly influenced by flux lattice melting.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Optical spectral weights and the ferromagnetic transition temperature of CMR manganites: relevance of double-exchange to real materials|A. Chattopadhyay,A. J. Millis,S. Das Sarma###
(841311, 841311)
Optical spectral weights and the ferromagnetic transition temperature of CMR manganites relevance of double-exchange to real materials.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.7Sr0.3MnO3
###Optical spectral weights and the ferromagnetic transition temperature of CMR manganites: relevance of double-exchange to real materials|A. Chattopadhyay,A. J. Millis,S. Das Sarma###
(841408, 841414)
Our results settle a controversy by showing that physics beyond double-exchangeis important even in La0.7Sr0.3MnO3, which has been regarded as aconventional double-exchange system.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Optical spectral weights and the ferromagnetic transition temperature of CMR manganites: relevance of double-exchange to real materials|A. Chattopadhyay,A. J. Millis,S. Das Sarma###
(841487, 841487)
 We show that the crucial quantity forcomparisons of different calculations to each other and to data is theconduction band kinetic energy K, which is insensitive to the details of theband structure and can be experimentally determined from optical conductivitymeasurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Optical spectral weights and the ferromagnetic transition temperature of CMR manganites: relevance of double-exchange to real materials|A. Chattopadhyay,A. J. Millis,S. Das Sarma###
(841579, 841579)
 The seemingly complicated dependence of Tc on the Hunds<missing VAR>coupling J<missing VAR> and carrier concentration n<missing VAR> is shown to reflect the variation ofK with J<missing VAR>, n<missing VAR> and temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sn
###Wavelength dependent negative and positive persistent photoconductivity in Sn delta-doped GaAs structures|V. A. Kulbachinskii,V. G. Kytin,A. V. Golikov,R. A. Lunin,R. T. F. van Schaijk,A. de Visser,A. P. Senichkin,A. S. Bugaev###
(841703, 841703)
Wavelength dependent negative and positive persistent photoconductivity in Sn delta-doped GaAs structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 2, 'x', 3],[191.0, 815, 'nm', 3],[196.0, 4.2, 'K', 3],[295.0, 815, 'nm', 5],[350.0, 2, 'x', 6]

GaAs
###Wavelength dependent negative and positive persistent photoconductivity in Sn delta-doped GaAs structures|V. A. Kulbachinskii,V. G. Kytin,A. V. Golikov,R. A. Lunin,R. T. F. van Schaijk,A. de Visser,A. P. Senichkin,A. S. Bugaev###
(841709, 841710)
Wavelength dependent negative and positive persistent photoconductivity in Sn delta-doped GaAs structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 2, 'x', 3],[184.0, 815, 'nm', 3],[189.0, 4.2, 'K', 3],[288.0, 815, 'nm', 5],[343.0, 2, 'x', 6]

GaAs
###Wavelength dependent negative and positive persistent photoconductivity in Sn delta-doped GaAs structures|V. A. Kulbachinskii,V. G. Kytin,A. V. Golikov,R. A. Lunin,R. T. F. van Schaijk,A. de Visser,A. P. Senichkin,A. S. Bugaev###
(841721, 841722)
 The photoconductivity of GaAs structures delta-doped by Sn has beeninvestigated for wavelengths lambda 650-1200 nm in the temperature interval T<missing VAR>4.2-300 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 2, 'x', 2],[172.0, 815, 'nm', 2],[177.0, 4.2, 'K', 2],[276.0, 815, 'nm', 4],[331.0, 2, 'x', 5]

Sn
###Wavelength dependent negative and positive persistent photoconductivity in Sn delta-doped GaAs structures|V. A. Kulbachinskii,V. G. Kytin,A. V. Golikov,R. A. Lunin,R. T. F. van Schaijk,A. de Visser,A. P. Senichkin,A. S. Bugaev###
(841732, 841732)
 The photoconductivity of GaAs structures delta-doped by Sn has beeninvestigated for wavelengths lambda 650-1200 nm in the temperature interval T<missing VAR>4.2-300 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 2, 'x', 2],[162.0, 815, 'nm', 2],[167.0, 4.2, 'K', 2],[266.0, 815, 'nm', 4],[321.0, 2, 'x', 5]

K
###Wavelength dependent negative and positive persistent photoconductivity in Sn delta-doped GaAs structures|V. A. Kulbachinskii,V. G. Kytin,A. V. Golikov,R. A. Lunin,R. T. F. van Schaijk,A. de Visser,A. P. Senichkin,A. S. Bugaev###
(841768, 841768)
 The photoconductivity of GaAs structures delta-doped by Sn has beeninvestigated for wavelengths lambda 650-1200 nm in the temperature interval T<missing VAR>4.2-300 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 2, 'x', 2],[126.0, 815, 'nm', 2],[131.0, 4.2, 'K', 2],[230.0, 815, 'nm', 4],[285.0, 2, 'x', 5]

H
###Wavelength dependent negative and positive persistent photoconductivity in Sn delta-doped GaAs structures|V. A. Kulbachinskii,V. G. Kytin,A. V. Golikov,R. A. Lunin,R. T. F. van Schaijk,A. de Visser,A. P. Senichkin,A. S. Bugaev###
(841843, 841843)
 For the heavilydoped structures (n<missing VAR>H> 2x1013 cm-2) we observe under illumination by lightwith wavelengths larger than the band-gap wavelength of the host material(lambda 815 nm at T<missing VAR> 4.2 K) first positive (PPPC) and then negative (NPPC)persistent photoconductivity.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 2, 'x', 0],[51.0, 815, 'nm', 0],[56.0, 4.2, 'K', 0],[155.0, 815, 'nm', 2],[210.0, 2, 'x', 3]

(PPPC)
###Wavelength dependent negative and positive persistent photoconductivity in Sn delta-doped GaAs structures|V. A. Kulbachinskii,V. G. Kytin,A. V. Golikov,R. A. Lunin,R. T. F. van Schaijk,A. de Visser,A. P. Senichkin,A. S. Bugaev###
(841906, 841911)
 For the heavilydoped structures (n<missing VAR>H> 2x1013 cm-2) we observe under illumination by lightwith wavelengths larger than the band-gap wavelength of the host material(lambda 815 nm at T<missing VAR> 4.2 K) first positive (PPPC) and then negative (NPPC)persistent photoconductivity.
Featurization successful!
0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 2, 'x', 0],[12.0, 815, 'nm', 0],[7.0, 4.2, 'K', 0],[87.0, 815, 'nm', 2],[142.0, 2, 'x', 3]

(NPPC)
###Wavelength dependent negative and positive persistent photoconductivity in Sn delta-doped GaAs structures|V. A. Kulbachinskii,V. G. Kytin,A. V. Golikov,R. A. Lunin,R. T. F. van Schaijk,A. de Visser,A. P. Senichkin,A. S. Bugaev###
(841919, 841924)
 For the heavilydoped structures (n<missing VAR>H> 2x1013 cm-2) we observe under illumination by lightwith wavelengths larger than the band-gap wavelength of the host material(lambda 815 nm at T<missing VAR> 4.2 K) first positive (PPPC) and then negative (NPPC)persistent photoconductivity.
Featurization successful!
0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 2, 'x', 0],[25.0, 815, 'nm', 0],[20.0, 4.2, 'K', 0],[74.0, 815, 'nm', 2],[129.0, 2, 'x', 3]

NPPC
###Wavelength dependent negative and positive persistent photoconductivity in Sn delta-doped GaAs structures|V. A. Kulbachinskii,V. G. Kytin,A. V. Golikov,R. A. Lunin,R. T. F. van Schaijk,A. de Visser,A. P. Senichkin,A. S. Bugaev###
(841934, 841937)
 The NPPC is attributed to the ionisation of DXcentres and PPPC is explained by the excitation of electrons from Cr impuritystates in the substrate.
Featurization terminated normally.
0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 2, 'x', 1],[40.0, 815, 'nm', 1],[35.0, 4.2, 'K', 1],[61.0, 815, 'nm', 1],[116.0, 2, 'x', 2]

PPPC
###Wavelength dependent negative and positive persistent photoconductivity in Sn delta-doped GaAs structures|V. A. Kulbachinskii,V. G. Kytin,A. V. Golikov,R. A. Lunin,R. T. F. van Schaijk,A. de Visser,A. P. Senichkin,A. S. Bugaev###
(841959, 841962)
 The NPPC is attributed to the ionisation of DXcentres and PPPC is explained by the excitation of electrons from Cr impuritystates in the substrate.
Featurization terminated normally.
0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 2, 'x', 1],[65.0, 815, 'nm', 1],[60.0, 4.2, 'K', 1],[36.0, 815, 'nm', 1],[91.0, 2, 'x', 2]

Cr
###Wavelength dependent negative and positive persistent photoconductivity in Sn delta-doped GaAs structures|V. A. Kulbachinskii,V. G. Kytin,A. V. Golikov,R. A. Lunin,R. T. F. van Schaijk,A. de Visser,A. P. Senichkin,A. S. Bugaev###
(841980, 841980)
 The NPPC is attributed to the ionisation of DXcentres and PPPC is explained by the excitation of electrons from Cr impuritystates in the substrate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 2, 'x', 1],[86.0, 815, 'nm', 1],[81.0, 4.2, 'K', 1],[18.0, 815, 'nm', 1],[73.0, 2, 'x', 2]

GaAs
###Wavelength dependent negative and positive persistent photoconductivity in Sn delta-doped GaAs structures|V. A. Kulbachinskii,V. G. Kytin,A. V. Golikov,R. A. Lunin,R. T. F. van Schaijk,A. de Visser,A. P. Senichkin,A. S. Bugaev###
(842023, 842024)
 For lambda< 815 nm in addition the excitation ofelectron over the band gap of GaAs contributes to the PPPC.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 2, 'x', 2],[129.0, 815, 'nm', 2],[124.0, 4.2, 'K', 2],[25.0, 815, 'nm', 0],[29.0, 2, 'x', 1]

PPPC
###Wavelength dependent negative and positive persistent photoconductivity in Sn delta-doped GaAs structures|V. A. Kulbachinskii,V. G. Kytin,A. V. Golikov,R. A. Lunin,R. T. F. van Schaijk,A. de Visser,A. P. Senichkin,A. S. Bugaev###
(842032, 842035)
 For lambda< 815 nm in addition the excitation ofelectron over the band gap of GaAs contributes to the PPPC.
Featurization terminated normally.
0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[187.0, 2, 'x', 2],[138.0, 815, 'nm', 2],[133.0, 4.2, 'K', 2],[34.0, 815, 'nm', 0],[18.0, 2, 'x', 1]

H
###Wavelength dependent negative and positive persistent photoconductivity in Sn delta-doped GaAs structures|V. A. Kulbachinskii,V. G. Kytin,A. V. Golikov,R. A. Lunin,R. T. F. van Schaijk,A. de Visser,A. P. Senichkin,A. S. Bugaev###
(842051, 842051)
 For the lightlydoped structures (n<missing VAR>H< 2x1013 cm-2) the photoconductivity effect is alwayspositive.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[206.0, 2, 'x', 3],[157.0, 815, 'nm', 3],[152.0, 4.2, 'K', 3],[53.0, 815, 'nm', 1],[2.0, 2, 'x', 0]

RuSr2GdCu2O8
###Magneto-Transport Properties of the Rutheno-Cuprate RuSr_2GdCu_2O_8|J. E. McCrone,J. R. Cooper,J. L. Tallon###
(842098, 842105)
Magneto-Transport Properties of the Rutheno-Cuprate RuSr2GdCu2O8.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0.07142857142857142,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07142857142857142,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 135, 'K', 2],[105.0, 50, 'K', 2],[238.0, 15, 'kOe', 5]

RuSr2GdCu2O8
###Magneto-Transport Properties of the Rutheno-Cuprate RuSr_2GdCu_2O_8|J. E. McCrone,J. R. Cooper,J. L. Tallon###
(842108, 842115)
 RuSr2GdCu2O8 (Ru-1212) is a triple perovskite containing both CuO2 andRuO2 layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0.07142857142857142,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07142857142857142,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 135, 'K', 1],[95.0, 50, 'K', 1],[228.0, 15, 'kOe', 4]

Ru
###Magneto-Transport Properties of the Rutheno-Cuprate RuSr_2GdCu_2O_8|J. E. McCrone,J. R. Cooper,J. L. Tallon###
(842118, 842118)
 RuSr2GdCu2O8 (Ru-1212) is a triple perovskite containing both CuO2 andRuO2 layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 135, 'K', 1],[92.0, 50, 'K', 1],[225.0, 15, 'kOe', 4]

CuO2
###Magneto-Transport Properties of the Rutheno-Cuprate RuSr_2GdCu_2O_8|J. E. McCrone,J. R. Cooper,J. L. Tallon###
(842135, 842137)
 RuSr2GdCu2O8 (Ru-1212) is a triple perovskite containing both CuO2 andRuO2 layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 135, 'K', 1],[73.0, 50, 'K', 1],[206.0, 15, 'kOe', 4]

RuO2
###Magneto-Transport Properties of the Rutheno-Cuprate RuSr_2GdCu_2O_8|J. E. McCrone,J. R. Cooper,J. L. Tallon###
(842142, 842144)
 RuSr2GdCu2O8 (Ru-1212) is a triple perovskite containing both CuO2 andRuO2 layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 135, 'K', 1],[66.0, 50, 'K', 1],[199.0, 15, 'kOe', 4]

CuO2
###Magneto-Transport Properties of the Rutheno-Cuprate RuSr_2GdCu_2O_8|J. E. McCrone,J. R. Cooper,J. L. Tallon###
(842425, 842427)
 We analysethe high temperature data in terms of spin-disorder scattering theory andextract a value for the exchange interaction between the carriers in the CuO2planes and the Ru spins.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[225.0, 135, 'K', 4],[215.0, 50, 'K', 4],[82.0, 15, 'kOe', 1]

Ru
###Magneto-Transport Properties of the Rutheno-Cuprate RuSr_2GdCu_2O_8|J. E. McCrone,J. R. Cooper,J. L. Tallon###
(842436, 842436)
 We analysethe high temperature data in terms of spin-disorder scattering theory andextract a value for the exchange interaction between the carriers in the CuO2planes and the Ru spins.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[236.0, 135, 'K', 4],[226.0, 50, 'K', 4],[93.0, 15, 'kOe', 1]

Tl2Mn2O7
###Carrier density change in Colossal Magnetoresistive Pyrochlore Tl2Mn2O7|H. Imai,Y. Shimakawa,Yu. V. Sushko,Y. Kubo###
(842463, 842468)
Carrier density change in Colossal Magnetoresistive Pyrochlore Tl2Mn2O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6363636363636364,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tl2Mn2O7
###Carrier density change in Colossal Magnetoresistive Pyrochlore Tl2Mn2O7|H. Imai,Y. Shimakawa,Yu. V. Sushko,Y. Kubo###
(842494, 842499)
 Hall resistivity and magneto-thermopower have been measured for colossalmagnetoresistive Tl2Mn2O7 over wide temperature and magnetic-field ranges.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6363636363636364,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Carrier density change in Colossal Magnetoresistive Pyrochlore Tl2Mn2O7|H. Imai,Y. Shimakawa,Yu. V. Sushko,Y. Kubo###
(842557, 842557)
 In contrast to perovskiteCMR materials, the anomalous Hall coefficient is negligible even in theferromagnetic state due to negligibly small skew scattering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Carrier density change in Colossal Magnetoresistive Pyrochlore Tl2Mn2O7|H. Imai,Y. Shimakawa,Yu. V. Sushko,Y. Kubo###
(842566, 842566)
 In contrast to perovskiteCMR materials, the anomalous Hall coefficient is negligible even in theferromagnetic state due to negligibly small skew scattering.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tl2Mn2O7
###Carrier density change in Colossal Magnetoresistive Pyrochlore Tl2Mn2O7|H. Imai,Y. Shimakawa,Yu. V. Sushko,Y. Kubo###
(842618, 842623)
 The characteristicfeature in Tl2Mn2O7 is that the carrier density changes with temperature andthe magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6363636363636364,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Carrier density change in Colossal Magnetoresistive Pyrochlore Tl2Mn2O7|H. Imai,Y. Shimakawa,Yu. V. Sushko,Y. Kubo###
(842662, 842662)
 The carrier density increases around T<missing VAR>C as the temperatureis lowered or as the magnetic field is increased, which explains the CMR ofthis material.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Carrier density change in Colossal Magnetoresistive Pyrochlore Tl2Mn2O7|H. Imai,Y. Shimakawa,Yu. V. Sushko,Y. Kubo###
(842696, 842696)
 The carrier density increases around T<missing VAR>C as the temperatureis lowered or as the magnetic field is increased, which explains the CMR ofthis material.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Carrier density change in Colossal Magnetoresistive Pyrochlore Tl2Mn2O7|H. Imai,Y. Shimakawa,Yu. V. Sushko,Y. Kubo###
(842742, 842742)
 The conduction-band-edge shift, which is caused by the strongs-d interaction between localized Mn moments and s<missing VAR>-like conduction electrons,is a possible mechanism for the carrier density change.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Temperature-Dependent Pseudogaps in Colossal Magnetoresistive Oxides|T. Saitoh,D. S. Dessau,Y. Moritomo,T. Kimura,Y. Tokura,N. Hamada###
(842847, 842847)
 Direct electronic structure measurements of a variety of the colossalmagnetoresistive oxides show the presence of a pseudogap at the Fermi energyE<missing VAR>F which drastically suppresses the electron spectral function at E<missing VAR>F.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Temperature-Dependent Pseudogaps in Colossal Magnetoresistive Oxides|T. Saitoh,D. S. Dessau,Y. Moritomo,T. Kimura,Y. Tokura,N. Hamada###
(842866, 842866)
 Direct electronic structure measurements of a variety of the colossalmagnetoresistive oxides show the presence of a pseudogap at the Fermi energyE<missing VAR>F which drastically suppresses the electron spectral function at E<missing VAR>F.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Temperature-Dependent Pseudogaps in Colossal Magnetoresistive Oxides|T. Saitoh,D. S. Dessau,Y. Moritomo,T. Kimura,Y. Tokura,N. Hamada###
(842960, 842960)
 These trends areconsistent with the major transport trends of the CMR oxides, implying a directrelationship between the pseudogap and transport, including the colossalconductivity changes which occur across Tc.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nd2-xCe
###Two-dimensional weak localization effects in high temperature superconductor Nd{2-x}Ce{x}CuO{4-d}|G. I. Harus,A. N. Ignatenkov,A. I. Ponomarev,L. D. Sabirzyanova,N. G. Shelushinina,A. A. Ivanov###
(843089, 843093)
Two-dimensional weak localization effects in high temperature superconductor Nd2-xCex<missing VAR>CuO4-d.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[215.0, 1.5, 'A', 3],[227.0, 2, 'D', 3],[311.0, 2, 'D', 4]

CuO4-d
###Two-dimensional weak localization effects in high temperature superconductor Nd{2-x}Ce{x}CuO{4-d}|G. I. Harus,A. N. Ignatenkov,A. I. Ponomarev,L. D. Sabirzyanova,N. G. Shelushinina,A. A. Ivanov###
(843095, 843099)
Two-dimensional weak localization effects in high temperature superconductor Nd2-xCex<missing VAR>CuO4-d.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[209.0, 1.5, 'A', 3],[221.0, 2, 'D', 3],[305.0, 2, 'D', 4]

Nd2-xCe
###Two-dimensional weak localization effects in high temperature superconductor Nd{2-x}Ce{x}CuO{4-d}|G. I. Harus,A. N. Ignatenkov,A. I. Ponomarev,L. D. Sabirzyanova,N. G. Shelushinina,A. A. Ivanov###
(843127, 843131)
 A systematic study of the resistivity and Hall effect in single crystalNd2-xCex<missing VAR>CuO4-d films (0.12 < x<missing VAR> < 0.20) is presented, with specialemphasis on the low-temperature dependence of the normal state conductance.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[177.0, 1.5, 'A', 2],[189.0, 2, 'D', 2],[273.0, 2, 'D', 3]

CuO4-d
###Two-dimensional weak localization effects in high temperature superconductor Nd{2-x}Ce{x}CuO{4-d}|G. I. Harus,A. N. Ignatenkov,A. I. Ponomarev,L. D. Sabirzyanova,N. G. Shelushinina,A. A. Ivanov###
(843133, 843137)
 A systematic study of the resistivity and Hall effect in single crystalNd2-xCex<missing VAR>CuO4-d films (0.12 < x<missing VAR> < 0.20) is presented, with specialemphasis on the low-temperature dependence of the normal state conductance.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[171.0, 1.5, 'A', 2],[183.0, 2, 'D', 2],[267.0, 2, 'D', 3]

B
###Two-dimensional weak localization effects in high temperature superconductor Nd{2-x}Ce{x}CuO{4-d}|G. I. Harus,A. N. Ignatenkov,A. I. Ponomarev,L. D. Sabirzyanova,N. G. Shelushinina,A. A. Ivanov###
(843266, 843266)
Two-dimensional weak localization effects are found both in a normallyconducting underdoped sample (x<missing VAR>  0.12) and in situ superconducting optimallydoped (x<missing VAR>  0.15) or overdoped (x<missing VAR>  0.18) samples in a high magnetic field B >Bc<missing VAR>2.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 1.5, 'A', 1],[54.0, 2, 'D', 1],[138.0, 2, 'D', 2]

B
###Two-dimensional weak localization effects in high temperature superconductor Nd{2-x}Ce{x}CuO{4-d}|G. I. Harus,A. N. Ignatenkov,A. I. Ponomarev,L. D. Sabirzyanova,N. G. Shelushinina,A. A. Ivanov###
(843271, 843271)
Two-dimensional weak localization effects are found both in a normallyconducting underdoped sample (x<missing VAR>  0.12) and in situ superconducting optimallydoped (x<missing VAR>  0.15) or overdoped (x<missing VAR>  0.18) samples in a high magnetic field B >Bc<missing VAR>2.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 1.5, 'A', 1],[49.0, 2, 'D', 1],[133.0, 2, 'D', 2]

CuO2
###Two-dimensional weak localization effects in high temperature superconductor Nd{2-x}Ce{x}CuO{4-d}|G. I. Harus,A. N. Ignatenkov,A. I. Ponomarev,L. D. Sabirzyanova,N. G. Shelushinina,A. A. Ivanov###
(843296, 843298)
 The phase coherence time and the effective thickness of a CuO2conducting layer d<missing VAR> ( 1.5 A) have been estimated by fitting 2D weaklocalization theory expressions to the magnetoresistivity data for magneticfields perpendicular to the ab plane and in plane.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 1.5, 'A', 0],[22.0, 2, 'D', 0],[106.0, 2, 'D', 1]

Nd2-xCe
###Two-dimensional weak localization effects in high temperature superconductor Nd{2-x}Ce{x}CuO{4-d}|G. I. Harus,A. N. Ignatenkov,A. I. Ponomarev,L. D. Sabirzyanova,N. G. Shelushinina,A. A. Ivanov###
(843414, 843418)
 Estimates of the parameterd<missing VAR> ensure the condition of strong carrier confinement and justify a modelconsisting of almost decoupled 2D metallic sheets for the Nd2-xCex<missing VAR>CuO4-dsingle crystal.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[106.0, 1.5, 'A', 1],[94.0, 2, 'D', 1],[10.0, 2, 'D', 0]

CuO4-d
###Two-dimensional weak localization effects in high temperature superconductor Nd{2-x}Ce{x}CuO{4-d}|G. I. Harus,A. N. Ignatenkov,A. I. Ponomarev,L. D. Sabirzyanova,N. G. Shelushinina,A. A. Ivanov###
(843420, 843424)
 Estimates of the parameterd<missing VAR> ensure the condition of strong carrier confinement and justify a modelconsisting of almost decoupled 2D metallic sheets for the Nd2-xCex<missing VAR>CuO4-dsingle crystal.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[112.0, 1.5, 'A', 1],[100.0, 2, 'D', 1],[16.0, 2, 'D', 0]

Pr1-xCa
###Competition between ferromagnetic and charge-orbital ordered phases in Pr$_{1-x}$Ca$_{x}$MnO$_3$ for $x$=1/4, 3/8, and 1/2|Takashi Hotta,Elbio Dagotto###
(843458, 843462)
Competition between ferromagnetic and charge-orbital ordered phases in Pr1-xCax<missing VAR>MnO3 for x<missing VAR>1/4, 3/8, and 1/2.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[11.0, 4, ',', 0],[16.0, 8, ',', 0],[152.0, 4, ',', 2],[157.0, 8, ',', 2],[165.0, 2, ',', 2]

MnO3
###Competition between ferromagnetic and charge-orbital ordered phases in Pr$_{1-x}$Ca$_{x}$MnO$_3$ for $x$=1/4, 3/8, and 1/2|Takashi Hotta,Elbio Dagotto###
(843464, 843466)
Competition between ferromagnetic and charge-orbital ordered phases in Pr1-xCax<missing VAR>MnO3 for x<missing VAR>1/4, 3/8, and 1/2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 4, ',', 0],[12.0, 8, ',', 0],[148.0, 4, ',', 2],[153.0, 8, ',', 2],[161.0, 2, ',', 2]

At
###Competition between ferromagnetic and charge-orbital ordered phases in Pr$_{1-x}$Ca$_{x}$MnO$_3$ for $x$=1/4, 3/8, and 1/2|Takashi Hotta,Elbio Dagotto###
(843539, 843539)
 At realistic values for the electron-phonon and antiferromagnetict2g spin couplings, a competition between a ferromagnetic (FM) phase and acharge-orbital ordered (COO) insulating state is found for x<missing VAR>1/4, 3/8, and1/2, as experimentally observed in Pr1-xCax<missing VAR>MnO3 forx<missing VAR>0.3sim0.5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 4, ',', 2],[61.0, 8, ',', 2],[75.0, 4, ',', 0],[80.0, 8, ',', 0],[88.0, 2, ',', 0]

F
###Competition between ferromagnetic and charge-orbital ordered phases in Pr$_{1-x}$Ca$_{x}$MnO$_3$ for $x$=1/4, 3/8, and 1/2|Takashi Hotta,Elbio Dagotto###
(843578, 843578)
 At realistic values for the electron-phonon and antiferromagnetict2g spin couplings, a competition between a ferromagnetic (FM) phase and acharge-orbital ordered (COO) insulating state is found for x<missing VAR>1/4, 3/8, and1/2, as experimentally observed in Pr1-xCax<missing VAR>MnO3 forx<missing VAR>0.3sim0.5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 4, ',', 2],[100.0, 8, ',', 2],[36.0, 4, ',', 0],[41.0, 8, ',', 0],[49.0, 2, ',', 0]

(COO)
###Competition between ferromagnetic and charge-orbital ordered phases in Pr$_{1-x}$Ca$_{x}$MnO$_3$ for $x$=1/4, 3/8, and 1/2|Takashi Hotta,Elbio Dagotto###
(843595, 843599)
 At realistic values for the electron-phonon and antiferromagnetict2g spin couplings, a competition between a ferromagnetic (FM) phase and acharge-orbital ordered (COO) insulating state is found for x<missing VAR>1/4, 3/8, and1/2, as experimentally observed in Pr1-xCax<missing VAR>MnO3 forx<missing VAR>0.3sim0.5.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 4, ',', 2],[117.0, 8, ',', 2],[15.0, 4, ',', 0],[20.0, 8, ',', 0],[28.0, 2, ',', 0]

Pr1-xCa
###Competition between ferromagnetic and charge-orbital ordered phases in Pr$_{1-x}$Ca$_{x}$MnO$_3$ for $x$=1/4, 3/8, and 1/2|Takashi Hotta,Elbio Dagotto###
(843638, 843642)
 At realistic values for the electron-phonon and antiferromagnetict2g spin couplings, a competition between a ferromagnetic (FM) phase and acharge-orbital ordered (COO) insulating state is found for x<missing VAR>1/4, 3/8, and1/2, as experimentally observed in Pr1-xCax<missing VAR>MnO3 forx<missing VAR>0.3sim0.5.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[165.0, 4, ',', 2],[160.0, 8, ',', 2],[24.0, 4, ',', 0],[19.0, 8, ',', 0],[11.0, 2, ',', 0]

MnO3
###Competition between ferromagnetic and charge-orbital ordered phases in Pr$_{1-x}$Ca$_{x}$MnO$_3$ for $x$=1/4, 3/8, and 1/2|Takashi Hotta,Elbio Dagotto###
(843644, 843646)
 At realistic values for the electron-phonon and antiferromagnetict2g spin couplings, a competition between a ferromagnetic (FM) phase and acharge-orbital ordered (COO) insulating state is found for x<missing VAR>1/4, 3/8, and1/2, as experimentally observed in Pr1-xCax<missing VAR>MnO3 forx<missing VAR>0.3sim0.5.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[171.0, 4, ',', 2],[166.0, 8, ',', 2],[30.0, 4, ',', 0],[25.0, 8, ',', 0],[17.0, 2, ',', 0]

F
###Competition between ferromagnetic and charge-orbital ordered phases in Pr$_{1-x}$Ca$_{x}$MnO$_3$ for $x$=1/4, 3/8, and 1/2|Takashi Hotta,Elbio Dagotto###
(843689, 843689)
 The FM<missing VAR>-COO energy difference issurprisingly small for the densities studied, result compatible with thepresence of a robust colossal-magnetoresistive effect inPr1-xCax<missing VAR>MnO3 in a large density interval.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[216.0, 4, ',', 4],[211.0, 8, ',', 4],[75.0, 4, ',', 2],[70.0, 8, ',', 2],[62.0, 2, ',', 2]

COO
###Competition between ferromagnetic and charge-orbital ordered phases in Pr$_{1-x}$Ca$_{x}$MnO$_3$ for $x$=1/4, 3/8, and 1/2|Takashi Hotta,Elbio Dagotto###
(843692, 843694)
 The FM<missing VAR>-COO energy difference issurprisingly small for the densities studied, result compatible with thepresence of a robust colossal-magnetoresistive effect inPr1-xCax<missing VAR>MnO3 in a large density interval.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[219.0, 4, ',', 4],[214.0, 8, ',', 4],[78.0, 4, ',', 2],[73.0, 8, ',', 2],[65.0, 2, ',', 2]

Pr1-xCa
###Competition between ferromagnetic and charge-orbital ordered phases in Pr$_{1-x}$Ca$_{x}$MnO$_3$ for $x$=1/4, 3/8, and 1/2|Takashi Hotta,Elbio Dagotto###
(843742, 843746)
 The FM<missing VAR>-COO energy difference issurprisingly small for the densities studied, result compatible with thepresence of a robust colossal-magnetoresistive effect inPr1-xCax<missing VAR>MnO3 in a large density interval.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[269.0, 4, ',', 4],[264.0, 8, ',', 4],[128.0, 4, ',', 2],[123.0, 8, ',', 2],[115.0, 2, ',', 2]

MnO3
###Competition between ferromagnetic and charge-orbital ordered phases in Pr$_{1-x}$Ca$_{x}$MnO$_3$ for $x$=1/4, 3/8, and 1/2|Takashi Hotta,Elbio Dagotto###
(843748, 843750)
 The FM<missing VAR>-COO energy difference issurprisingly small for the densities studied, result compatible with thepresence of a robust colossal-magnetoresistive effect inPr1-xCax<missing VAR>MnO3 in a large density interval.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[275.0, 4, ',', 4],[270.0, 8, ',', 4],[134.0, 4, ',', 2],[129.0, 8, ',', 2],[121.0, 2, ',', 2]

Sr2FeMoO6
###Epitaxy and magnetotransport of Sr_2FeMoO_6 thin films|W. Westerburg,D. Reisinger,G. Jakob###
(843779, 843784)
Epitaxy and magnetotransport of Sr2FeMoO6 thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[182.0, 4, 'mu', 6],[237.0, -6.01, 'x', 8],[248.0, 300, 'K', 8],[267.0, 1.3, 'per', 8],[296.0, 1, 'mu', 9]

Sr2FeMoO6
###Epitaxy and magnetotransport of Sr_2FeMoO_6 thin films|W. Westerburg,D. Reisinger,G. Jakob###
(843807, 843812)
 By pulsed-laser deposition epitaxial thin films of Sr2FeMoO6 have been pre-pared on (100) SrTiO3 substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 4, 'mu', 5],[209.0, -6.01, 'x', 7],[220.0, 300, 'K', 7],[239.0, 1.3, 'per', 7],[268.0, 1, 'mu', 8]

SrTiO3
###Epitaxy and magnetotransport of Sr_2FeMoO_6 thin films|W. Westerburg,D. Reisinger,G. Jakob###
(843830, 843833)
 By pulsed-laser deposition epitaxial thin films of Sr2FeMoO6 have been pre-pared on (100) SrTiO3 substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 4, 'mu', 5],[188.0, -6.01, 'x', 7],[199.0, 300, 'K', 7],[218.0, 1.3, 'per', 7],[247.0, 1, 'mu', 8]

C
###Epitaxy and magnetotransport of Sr_2FeMoO_6 thin films|W. Westerburg,D. Reisinger,G. Jakob###
(843853, 843853)
 Already for a deposition temperature of 320C epitaxial growth is achieved.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 4, 'mu', 4],[168.0, -6.01, 'x', 6],[179.0, 300, 'K', 6],[198.0, 1.3, 'per', 6],[227.0, 1, 'mu', 7]

At
###Epitaxy and magnetotransport of Sr_2FeMoO_6 thin films|W. Westerburg,D. Reisinger,G. Jakob###
(843888, 843888)
 At high (low) deposition temperaturethe Fe,Mo sublattice has a rock-salt (random) structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 4, 'mu', 2],[133.0, -6.01, 'x', 4],[144.0, 300, 'K', 4],[163.0, 1.3, 'per', 4],[192.0, 1, 'mu', 5]

Fe
###Epitaxy and magnetotransport of Sr_2FeMoO_6 thin films|W. Westerburg,D. Reisinger,G. Jakob###
(843903, 843903)
 At high (low) deposition temperaturethe Fe,Mo sublattice has a rock-salt (random) structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 4, 'mu', 2],[118.0, -6.01, 'x', 4],[129.0, 300, 'K', 4],[148.0, 1.3, 'per', 4],[177.0, 1, 'mu', 5]

Mo
###Epitaxy and magnetotransport of Sr_2FeMoO_6 thin films|W. Westerburg,D. Reisinger,G. Jakob###
(843905, 843905)
 At high (low) deposition temperaturethe Fe,Mo sublattice has a rock-salt (random) structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 4, 'mu', 2],[116.0, -6.01, 'x', 4],[127.0, 300, 'K', 4],[146.0, 1.3, 'per', 4],[175.0, 1, 'mu', 5]

B
###Epitaxy and magnetotransport of Sr_2FeMoO_6 thin films|W. Westerburg,D. Reisinger,G. Jakob###
(843967, 843967)
The magnetic moment was determined to 4 muB per formula unit (f.u.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[1.0, 4, 'mu', 0],[54.0, -6.01, 'x', 2],[65.0, 300, 'K', 2],[84.0, 1.3, 'per', 2],[113.0, 1, 'mu', 3]

As
###Epitaxy and magnetotransport of Sr_2FeMoO_6 thin films|W. Westerburg,D. Reisinger,G. Jakob###
(844029, 844029)
 Wefound an ordinary Hall coefficient of -6.01x10-10 m<missing VAR>3/As at 300 K,corresponding to an electronlike charge-carrier density of 1.3 per Fe,Mo-pair.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 4, 'mu', 2],[8.0, -6.01, 'x', 0],[3.0, 300, 'K', 0],[22.0, 1.3, 'per', 0],[51.0, 1, 'mu', 1]

Fe
###Epitaxy and magnetotransport of Sr_2FeMoO_6 thin films|W. Westerburg,D. Reisinger,G. Jakob###
(844053, 844053)
 Wefound an ordinary Hall coefficient of -6.01x10-10 m<missing VAR>3/As at 300 K,corresponding to an electronlike charge-carrier density of 1.3 per Fe,Mo-pair.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 4, 'mu', 2],[32.0, -6.01, 'x', 0],[21.0, 300, 'K', 0],[2.0, 1.3, 'per', 0],[27.0, 1, 'mu', 1]

Mo
###Epitaxy and magnetotransport of Sr_2FeMoO_6 thin films|W. Westerburg,D. Reisinger,G. Jakob###
(844055, 844055)
 Wefound an ordinary Hall coefficient of -6.01x10-10 m<missing VAR>3/As at 300 K,corresponding to an electronlike charge-carrier density of 1.3 per Fe,Mo-pair.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 4, 'mu', 2],[34.0, -6.01, 'x', 0],[23.0, 300, 'K', 0],[4.0, 1.3, 'per', 0],[25.0, 1, 'mu', 1]

In
###Epitaxy and magnetotransport of Sr_2FeMoO_6 thin films|W. Westerburg,D. Reisinger,G. Jakob###
(844061, 844061)
In the semiconducting films the magnetic moment is reduced to 1 muB/f.u.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 4, 'mu', 3],[40.0, -6.01, 'x', 1],[29.0, 300, 'K', 1],[10.0, 1.3, 'per', 1],[19.0, 1, 'mu', 0]

B
###Epitaxy and magnetotransport of Sr_2FeMoO_6 thin films|W. Westerburg,D. Reisinger,G. Jakob###
(844081, 844081)
In the semiconducting films the magnetic moment is reduced to 1 muB/f.u.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 4, 'mu', 3],[60.0, -6.01, 'x', 1],[49.0, 300, 'K', 1],[30.0, 1.3, 'per', 1],[1.0, 1, 'mu', 0]

Fe
###Epitaxy and magnetotransport of Sr_2FeMoO_6 thin films|W. Westerburg,D. Reisinger,G. Jakob###
(844099, 844099)
 dueto disorder in the Fe,Mo sublattice.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 4, 'mu', 4],[78.0, -6.01, 'x', 2],[67.0, 300, 'K', 2],[48.0, 1.3, 'per', 2],[19.0, 1, 'mu', 1]

Mo
###Epitaxy and magnetotransport of Sr_2FeMoO_6 thin films|W. Westerburg,D. Reisinger,G. Jakob###
(844101, 844101)
 dueto disorder in the Fe,Mo sublattice.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 4, 'mu', 4],[80.0, -6.01, 'x', 2],[69.0, 300, 'K', 2],[50.0, 1.3, 'per', 2],[21.0, 1, 'mu', 1]

In
###Epitaxy and magnetotransport of Sr_2FeMoO_6 thin films|W. Westerburg,D. Reisinger,G. Jakob###
(844106, 844106)
 In low fields an anomalous holelikecontribution dominates the Hall voltage, which vanishes at low temperatures forthe metallic films only.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 4, 'mu', 5],[85.0, -6.01, 'x', 3],[74.0, 300, 'K', 3],[55.0, 1.3, 'per', 3],[26.0, 1, 'mu', 2]

Mn
###Temperature dependent changes of the Mn 3d and 4p bands near T$_c$ in Colossal Magnetoresistance systems: a XANES study of La$_{1-x}$Ca$_x$MnO$_3$|F. Bridges,C. H. Booth,G. H. Kwei,J. J. Neumeier,G. A. Sawatzky###
(844170, 844170)
Temperature dependent changes of the Mn 3d and 4p bands near Tc in Colossal Magnetoresistance systems a X<missing VAR>ANE<missing VAR>S study of La1-xCax<missing VAR>MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[1.0, 3, 'd', 0],[4.0, 4, 'p', 0],[153.0, 1, 's', 2],[179.0, 4, 'p', 2],[187.0, 3, 'd', 2],[241.0, 4, 'eV', 3],[248.0, 0.7, 'eV', 3],[295.0, 3, 'd', 4]

N
###Temperature dependent changes of the Mn 3d and 4p bands near T$_c$ in Colossal Magnetoresistance systems: a XANES study of La$_{1-x}$Ca$_x$MnO$_3$|F. Bridges,C. H. Booth,G. H. Kwei,J. J. Neumeier,G. A. Sawatzky###
(844195, 844195)
Temperature dependent changes of the Mn 3d and 4p bands near Tc in Colossal Magnetoresistance systems a X<missing VAR>ANE<missing VAR>S study of La1-xCax<missing VAR>MnO3.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 3, 'd', 0],[21.0, 4, 'p', 0],[128.0, 1, 's', 2],[154.0, 4, 'p', 2],[162.0, 3, 'd', 2],[216.0, 4, 'eV', 3],[223.0, 0.7, 'eV', 3],[270.0, 3, 'd', 4]

S
###Temperature dependent changes of the Mn 3d and 4p bands near T$_c$ in Colossal Magnetoresistance systems: a XANES study of La$_{1-x}$Ca$_x$MnO$_3$|F. Bridges,C. H. Booth,G. H. Kwei,J. J. Neumeier,G. A. Sawatzky###
(844197, 844197)
Temperature dependent changes of the Mn 3d and 4p bands near Tc in Colossal Magnetoresistance systems a X<missing VAR>ANE<missing VAR>S study of La1-xCax<missing VAR>MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 3, 'd', 0],[23.0, 4, 'p', 0],[126.0, 1, 's', 2],[152.0, 4, 'p', 2],[160.0, 3, 'd', 2],[214.0, 4, 'eV', 3],[221.0, 0.7, 'eV', 3],[268.0, 3, 'd', 4]

La1-xCa
###Temperature dependent changes of the Mn 3d and 4p bands near T$_c$ in Colossal Magnetoresistance systems: a XANES study of La$_{1-x}$Ca$_x$MnO$_3$|F. Bridges,C. H. Booth,G. H. Kwei,J. J. Neumeier,G. A. Sawatzky###
(844203, 844207)
Temperature dependent changes of the Mn 3d and 4p bands near Tc in Colossal Magnetoresistance systems a X<missing VAR>ANE<missing VAR>S study of La1-xCax<missing VAR>MnO3.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[32.0, 3, 'd', 0],[29.0, 4, 'p', 0],[116.0, 1, 's', 2],[142.0, 4, 'p', 2],[150.0, 3, 'd', 2],[204.0, 4, 'eV', 3],[211.0, 0.7, 'eV', 3],[258.0, 3, 'd', 4]

MnO3
###Temperature dependent changes of the Mn 3d and 4p bands near T$_c$ in Colossal Magnetoresistance systems: a XANES study of La$_{1-x}$Ca$_x$MnO$_3$|F. Bridges,C. H. Booth,G. H. Kwei,J. J. Neumeier,G. A. Sawatzky###
(844209, 844211)
Temperature dependent changes of the Mn 3d and 4p bands near Tc in Colossal Magnetoresistance systems a X<missing VAR>ANE<missing VAR>S study of La1-xCax<missing VAR>MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 3, 'd', 0],[35.0, 4, 'p', 0],[112.0, 1, 's', 2],[138.0, 4, 'p', 2],[146.0, 3, 'd', 2],[200.0, 4, 'eV', 3],[207.0, 0.7, 'eV', 3],[254.0, 3, 'd', 4]

N
###Temperature dependent changes of the Mn 3d and 4p bands near T$_c$ in Colossal Magnetoresistance systems: a XANES study of La$_{1-x}$Ca$_x$MnO$_3$|F. Bridges,C. H. Booth,G. H. Kwei,J. J. Neumeier,G. A. Sawatzky###
(844237, 844237)
 We report high-resolution X<missing VAR>-ray Absorption Near Edge Structure (X<missing VAR>ANE<missing VAR>S)measurements at the Mn K-edge as a function of temperature, forLa1-xCax<missing VAR>MnO3 samples, with a focus mainly on the pre-edge region.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 3, 'd', 1],[63.0, 4, 'p', 1],[86.0, 1, 's', 1],[112.0, 4, 'p', 1],[120.0, 3, 'd', 1],[174.0, 4, 'eV', 2],[181.0, 0.7, 'eV', 2],[228.0, 3, 'd', 3]

S
###Temperature dependent changes of the Mn 3d and 4p bands near T$_c$ in Colossal Magnetoresistance systems: a XANES study of La$_{1-x}$Ca$_x$MnO$_3$|F. Bridges,C. H. Booth,G. H. Kwei,J. J. Neumeier,G. A. Sawatzky###
(844239, 844239)
 We report high-resolution X<missing VAR>-ray Absorption Near Edge Structure (X<missing VAR>ANE<missing VAR>S)measurements at the Mn K-edge as a function of temperature, forLa1-xCax<missing VAR>MnO3 samples, with a focus mainly on the pre-edge region.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 3, 'd', 1],[65.0, 4, 'p', 1],[84.0, 1, 's', 1],[110.0, 4, 'p', 1],[118.0, 3, 'd', 1],[172.0, 4, 'eV', 2],[179.0, 0.7, 'eV', 2],[226.0, 3, 'd', 3]

Mn
###Temperature dependent changes of the Mn 3d and 4p bands near T$_c$ in Colossal Magnetoresistance systems: a XANES study of La$_{1-x}$Ca$_x$MnO$_3$|F. Bridges,C. H. Booth,G. H. Kwei,J. J. Neumeier,G. A. Sawatzky###
(844249, 844249)
 We report high-resolution X<missing VAR>-ray Absorption Near Edge Structure (X<missing VAR>ANE<missing VAR>S)measurements at the Mn K-edge as a function of temperature, forLa1-xCax<missing VAR>MnO3 samples, with a focus mainly on the pre-edge region.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 3, 'd', 1],[75.0, 4, 'p', 1],[74.0, 1, 's', 1],[100.0, 4, 'p', 1],[108.0, 3, 'd', 1],[162.0, 4, 'eV', 2],[169.0, 0.7, 'eV', 2],[216.0, 3, 'd', 3]

K
###Temperature dependent changes of the Mn 3d and 4p bands near T$_c$ in Colossal Magnetoresistance systems: a XANES study of La$_{1-x}$Ca$_x$MnO$_3$|F. Bridges,C. H. Booth,G. H. Kwei,J. J. Neumeier,G. A. Sawatzky###
(844251, 844251)
 We report high-resolution X<missing VAR>-ray Absorption Near Edge Structure (X<missing VAR>ANE<missing VAR>S)measurements at the Mn K-edge as a function of temperature, forLa1-xCax<missing VAR>MnO3 samples, with a focus mainly on the pre-edge region.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 3, 'd', 1],[77.0, 4, 'p', 1],[72.0, 1, 's', 1],[98.0, 4, 'p', 1],[106.0, 3, 'd', 1],[160.0, 4, 'eV', 2],[167.0, 0.7, 'eV', 2],[214.0, 3, 'd', 3]

La1-xCa
###Temperature dependent changes of the Mn 3d and 4p bands near T$_c$ in Colossal Magnetoresistance systems: a XANES study of La$_{1-x}$Ca$_x$MnO$_3$|F. Bridges,C. H. Booth,G. H. Kwei,J. J. Neumeier,G. A. Sawatzky###
(844269, 844273)
 We report high-resolution X<missing VAR>-ray Absorption Near Edge Structure (X<missing VAR>ANE<missing VAR>S)measurements at the Mn K-edge as a function of temperature, forLa1-xCax<missing VAR>MnO3 samples, with a focus mainly on the pre-edge region.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[98.0, 3, 'd', 1],[95.0, 4, 'p', 1],[50.0, 1, 's', 1],[76.0, 4, 'p', 1],[84.0, 3, 'd', 1],[138.0, 4, 'eV', 2],[145.0, 0.7, 'eV', 2],[192.0, 3, 'd', 3]

MnO3
###Temperature dependent changes of the Mn 3d and 4p bands near T$_c$ in Colossal Magnetoresistance systems: a XANES study of La$_{1-x}$Ca$_x$MnO$_3$|F. Bridges,C. H. Booth,G. H. Kwei,J. J. Neumeier,G. A. Sawatzky###
(844275, 844277)
 We report high-resolution X<missing VAR>-ray Absorption Near Edge Structure (X<missing VAR>ANE<missing VAR>S)measurements at the Mn K-edge as a function of temperature, forLa1-xCax<missing VAR>MnO3 samples, with a focus mainly on the pre-edge region.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 3, 'd', 1],[101.0, 4, 'p', 1],[46.0, 1, 's', 1],[72.0, 4, 'p', 1],[80.0, 3, 'd', 1],[134.0, 4, 'eV', 2],[141.0, 0.7, 'eV', 2],[188.0, 3, 'd', 3]

Mn
###Temperature dependent changes of the Mn 3d and 4p bands near T$_c$ in Colossal Magnetoresistance systems: a XANES study of La$_{1-x}$Ca$_x$MnO$_3$|F. Bridges,C. H. Booth,G. H. Kwei,J. J. Neumeier,G. A. Sawatzky###
(844348, 844348)
Small peaks labeled A1-A3 are observed which corresponds to 1s-3d<missing VAR>dipole-transitions, made weakly allowed via a hybridization of Mn 4p stateswith Mn 3d states on it neighboring atoms.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[177.0, 3, 'd', 2],[174.0, 4, 'p', 2],[25.0, 1, 's', 0],[1.0, 4, 'p', 0],[9.0, 3, 'd', 0],[63.0, 4, 'eV', 1],[70.0, 0.7, 'eV', 1],[117.0, 3, 'd', 2]

Mn
###Temperature dependent changes of the Mn 3d and 4p bands near T$_c$ in Colossal Magnetoresistance systems: a XANES study of La$_{1-x}$Ca$_x$MnO$_3$|F. Bridges,C. H. Booth,G. H. Kwei,J. J. Neumeier,G. A. Sawatzky###
(844356, 844356)
Small peaks labeled A1-A3 are observed which corresponds to 1s-3d<missing VAR>dipole-transitions, made weakly allowed via a hybridization of Mn 4p stateswith Mn 3d states on it neighboring atoms.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[185.0, 3, 'd', 2],[182.0, 4, 'p', 2],[33.0, 1, 's', 0],[7.0, 4, 'p', 0],[1.0, 3, 'd', 0],[55.0, 4, 'eV', 1],[62.0, 0.7, 'eV', 1],[109.0, 3, 'd', 2]

U
###Temperature dependent changes of the Mn 3d and 4p bands near T$_c$ in Colossal Magnetoresistance systems: a XANES study of La$_{1-x}$Ca$_x$MnO$_3$|F. Bridges,C. H. Booth,G. H. Kwei,J. J. Neumeier,G. A. Sawatzky###
(844409, 844409)
 Adjusting the parameters in anLSDA calculation to approximately match the experimental A1-A2 splittingyields U  4 eV and J<missing VAR>H  0.7 eV.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[238.0, 3, 'd', 3],[235.0, 4, 'p', 3],[86.0, 1, 's', 1],[60.0, 4, 'p', 1],[52.0, 3, 'd', 1],[2.0, 4, 'eV', 0],[9.0, 0.7, 'eV', 0],[56.0, 3, 'd', 1]

H
###Temperature dependent changes of the Mn 3d and 4p bands near T$_c$ in Colossal Magnetoresistance systems: a XANES study of La$_{1-x}$Ca$_x$MnO$_3$|F. Bridges,C. H. Booth,G. H. Kwei,J. J. Neumeier,G. A. Sawatzky###
(844416, 844416)
 Adjusting the parameters in anLSDA calculation to approximately match the experimental A1-A2 splittingyields U  4 eV and J<missing VAR>H  0.7 eV.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[245.0, 3, 'd', 3],[242.0, 4, 'p', 3],[93.0, 1, 's', 1],[67.0, 4, 'p', 1],[59.0, 3, 'd', 1],[5.0, 4, 'eV', 0],[2.0, 0.7, 'eV', 0],[49.0, 3, 'd', 1]

CP
###Many-body CPA for the Holstein-DE model|A. C. M. Green###
(844533, 844534)
Many-body CPA for the Holstein-DE model.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CP
###Many-body CPA for the Holstein-DE model|A. C. M. Green###
(844562, 844563)
 A many-body coherent potential approximation (CPA) previously developed forthe double exchange (DE) model is extended to include coupling to local quantumphonons.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F1/F2
###Does Giant Magnetoresistance Survive in Presence of Superconducting Contact?|N. Ryzhanova,C. Lacroix,A. Vedyayev,D. Bagrets,B. Dieny###
(844868, 844872)
 The giant magnetoresistance (GMR) of ferromagnetic bilayers with asuperconducting contact (F1/F2/S) is calculated in ballistic and diffusiveregimes.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

S
###Does Giant Magnetoresistance Survive in Presence of Superconducting Contact?|N. Ryzhanova,C. Lacroix,A. Vedyayev,D. Bagrets,B. Dieny###
(844874, 844874)
 The giant magnetoresistance (GMR) of ferromagnetic bilayers with asuperconducting contact (F1/F2/S) is calculated in ballistic and diffusiveregimes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Does Giant Magnetoresistance Survive in Presence of Superconducting Contact?|N. Ryzhanova,C. Lacroix,A. Vedyayev,D. Bagrets,B. Dieny###
(844893, 844893)
 As in spin-valve, it is assumed that the magnetization in the twoferromagnetic layers F1 and F2 can be changed from parallel to antiparallel.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F1
###Does Giant Magnetoresistance Survive in Presence of Superconducting Contact?|N. Ryzhanova,C. Lacroix,A. Vedyayev,D. Bagrets,B. Dieny###
(844925, 844926)
 As in spin-valve, it is assumed that the magnetization in the twoferromagnetic layers F1 and F2 can be changed from parallel to antiparallel.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F2
###Does Giant Magnetoresistance Survive in Presence of Superconducting Contact?|N. Ryzhanova,C. Lacroix,A. Vedyayev,D. Bagrets,B. Dieny###
(844930, 844931)
 As in spin-valve, it is assumed that the magnetization in the twoferromagnetic layers F1 and F2 can be changed from parallel to antiparallel.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F2
###Does Giant Magnetoresistance Survive in Presence of Superconducting Contact?|N. Ryzhanova,C. Lacroix,A. Vedyayev,D. Bagrets,B. Dieny###
(845002, 845003)
 Itis shown that the GMR defined as the change of conductance between the twomagnetic configurations is an oscillatory function of the thickness of F2 layerand tends to an asymptotic positive value at large thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F2
###Does Giant Magnetoresistance Survive in Presence of Superconducting Contact?|N. Ryzhanova,C. Lacroix,A. Vedyayev,D. Bagrets,B. Dieny###
(845052, 845053)
 This is due tothe formation of quantum well states in F2 induced by Andreev reflection at theF2/S interface and reflection at F1/F2 interface in antiparallel configuration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F2/S
###Does Giant Magnetoresistance Survive in Presence of Superconducting Contact?|N. Ryzhanova,C. Lacroix,A. Vedyayev,D. Bagrets,B. Dieny###
(845068, 845071)
 This is due tothe formation of quantum well states in F2 induced by Andreev reflection at theF2/S interface and reflection at F1/F2 interface in antiparallel configuration.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

F1/F2
###Does Giant Magnetoresistance Survive in Presence of Superconducting Contact?|N. Ryzhanova,C. Lacroix,A. Vedyayev,D. Bagrets,B. Dieny###
(845081, 845085)
 This is due tothe formation of quantum well states in F2 induced by Andreev reflection at theF2/S interface and reflection at F1/F2 interface in antiparallel configuration.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

In
###Does Giant Magnetoresistance Survive in Presence of Superconducting Contact?|N. Ryzhanova,C. Lacroix,A. Vedyayev,D. Bagrets,B. Dieny###
(845097, 845097)
In the diffusive regime, if only spin-dependent scattering rates in themagnetic layers are considered (no difference in Fermi wave-vectors betweenspin up and down electrons) then the GMR is supressed due to the mixing of spinup and down electron-hole channels by Andreev reflection.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(CO)
###Ferromagnetism and Colossal Magnetoresistance from the Coexistence of Comparable Charge and Spin Density Orders|Georgios Varelogiannis###
(845272, 845275)
 We report a complete multicomponent mean-field-theory for the coexistence andcompetition of charge ordering (CO), antiferromagnetic (AFM) and ferromagnetic(FM) spin ordering in the presence of a uniform magnetic field.
Featurization successful!
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Ferromagnetism and Colossal Magnetoresistance from the Coexistence of Comparable Charge and Spin Density Orders|Georgios Varelogiannis###
(845282, 845282)
 We report a complete multicomponent mean-field-theory for the coexistence andcompetition of charge ordering (CO), antiferromagnetic (AFM) and ferromagnetic(FM) spin ordering in the presence of a uniform magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Ferromagnetism and Colossal Magnetoresistance from the Coexistence of Comparable Charge and Spin Density Orders|Georgios Varelogiannis###
(845292, 845292)
 We report a complete multicomponent mean-field-theory for the coexistence andcompetition of charge ordering (CO), antiferromagnetic (AFM) and ferromagnetic(FM) spin ordering in the presence of a uniform magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Ferromagnetism and Colossal Magnetoresistance from the Coexistence of Comparable Charge and Spin Density Orders|Georgios Varelogiannis###
(845322, 845322)
 Doping the AFM<missing VAR>or CO state always generates a ferromagnetic component.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CO
###Ferromagnetism and Colossal Magnetoresistance from the Coexistence of Comparable Charge and Spin Density Orders|Georgios Varelogiannis###
(845328, 845329)
 Doping the AFM<missing VAR>or CO state always generates a ferromagnetic component.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Ferromagnetism and Colossal Magnetoresistance from the Coexistence of Comparable Charge and Spin Density Orders|Georgios Varelogiannis###
(845346, 845346)
 Itinerant FM<missing VAR>, AFM<missing VAR> andCO, necessarily coexist and compete in a particle-hole asymmetric system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Ferromagnetism and Colossal Magnetoresistance from the Coexistence of Comparable Charge and Spin Density Orders|Georgios Varelogiannis###
(845351, 845351)
 Itinerant FM<missing VAR>, AFM<missing VAR> andCO, necessarily coexist and compete in a particle-hole asymmetric system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CO
###Ferromagnetism and Colossal Magnetoresistance from the Coexistence of Comparable Charge and Spin Density Orders|Georgios Varelogiannis###
(845357, 845358)
 Itinerant FM<missing VAR>, AFM<missing VAR> andCO, necessarily coexist and compete in a particle-hole asymmetric system.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Ferromagnetism and Colossal Magnetoresistance from the Coexistence of Comparable Charge and Spin Density Orders|Georgios Varelogiannis###
(845390, 845390)
Melting of large AFM<missing VAR>-CO orders by small magnetic fields and the relatedphenomenon of Colossal Magnetoresistance (CMR) may arise whenever the CO andAFM<missing VAR> order parameters have similar magnitude and momentum structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CO
###Ferromagnetism and Colossal Magnetoresistance from the Coexistence of Comparable Charge and Spin Density Orders|Georgios Varelogiannis###
(845393, 845394)
Melting of large AFM<missing VAR>-CO orders by small magnetic fields and the relatedphenomenon of Colossal Magnetoresistance (CMR) may arise whenever the CO andAFM<missing VAR> order parameters have similar magnitude and momentum structure.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Ferromagnetism and Colossal Magnetoresistance from the Coexistence of Comparable Charge and Spin Density Orders|Georgios Varelogiannis###
(845422, 845422)
Melting of large AFM<missing VAR>-CO orders by small magnetic fields and the relatedphenomenon of Colossal Magnetoresistance (CMR) may arise whenever the CO andAFM<missing VAR> order parameters have similar magnitude and momentum structure.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CO
###Ferromagnetism and Colossal Magnetoresistance from the Coexistence of Comparable Charge and Spin Density Orders|Georgios Varelogiannis###
(845435, 845436)
Melting of large AFM<missing VAR>-CO orders by small magnetic fields and the relatedphenomenon of Colossal Magnetoresistance (CMR) may arise whenever the CO andAFM<missing VAR> order parameters have similar magnitude and momentum structure.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Ferromagnetism and Colossal Magnetoresistance from the Coexistence of Comparable Charge and Spin Density Orders|Georgios Varelogiannis###
(845442, 845442)
Melting of large AFM<missing VAR>-CO orders by small magnetic fields and the relatedphenomenon of Colossal Magnetoresistance (CMR) may arise whenever the CO andAFM<missing VAR> order parameters have similar magnitude and momentum structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Ferromagnetism and Colossal Magnetoresistance from the Coexistence of Comparable Charge and Spin Density Orders|Georgios Varelogiannis###
(845469, 845469)
 Hole dopingfavors FM<missing VAR> metallic states and CMR while electron doping favors AFM<missing VAR>-CO states inagreement with the phase diagram of perovskite manganites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Ferromagnetism and Colossal Magnetoresistance from the Coexistence of Comparable Charge and Spin Density Orders|Georgios Varelogiannis###
(845478, 845478)
 Hole dopingfavors FM<missing VAR> metallic states and CMR while electron doping favors AFM<missing VAR>-CO states inagreement with the phase diagram of perovskite manganites.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Ferromagnetism and Colossal Magnetoresistance from the Coexistence of Comparable Charge and Spin Density Orders|Georgios Varelogiannis###
(845491, 845491)
 Hole dopingfavors FM<missing VAR> metallic states and CMR while electron doping favors AFM<missing VAR>-CO states inagreement with the phase diagram of perovskite manganites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CO
###Ferromagnetism and Colossal Magnetoresistance from the Coexistence of Comparable Charge and Spin Density Orders|Georgios Varelogiannis###
(845494, 845495)
 Hole dopingfavors FM<missing VAR> metallic states and CMR while electron doping favors AFM<missing VAR>-CO states inagreement with the phase diagram of perovskite manganites.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Thermokinetic approach of the generalized Landau-Lifshitz-Gilbert equation with spin polarized current|J. -E. Wegrowe###
(845554, 845554)
 In order to describe the recently observed effect of current inducedmagnetization reversal in magnetic nanostructures, the thermokinetic theory isapplied to a metallic ferromagnet in contact with a reservoir of spin polarizedconduction electrons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Thermokinetic approach of the generalized Landau-Lifshitz-Gilbert equation with spin polarized current|J. -E. Wegrowe###
(845803, 845803)
 The equation is applied to the measurements obtained onsingle magnetic Ni nanowires.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Symmetry Dependence of Localization in Quasi- 1- dimensional Disordered Wires|Stefan Kettemann###
(846051, 846051)
 In general, the local level spacing is shown tobe proportional to the excitation gap of a virtual particle, moving on acompact symmetric space.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ca2FeReO6
###Magnetic and structural properties of the double-perovskite Ca_2FeReO_6|W. Westerburg,O. Lang,C. Felser,W. Tremel,M. Waldeck,F. Renz,P. Guetlich,C. Ritter,G. Jakob###
(846130, 846135)
Magnetic and structural properties of the double-perovskite Ca2FeReO6.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 540, 'K', 1],[94.0, 548, 'K', 3]

Ca2FeReO6
###Magnetic and structural properties of the double-perovskite Ca_2FeReO_6|W. Westerburg,O. Lang,C. Felser,W. Tremel,M. Waldeck,F. Renz,P. Guetlich,C. Ritter,G. Jakob###
(846152, 846157)
 We suceeded in the preparation of polycrystalline Ca2FeReO6 which has aCurie temperature of 540 K, the highest value of all magnetic perovskitesinvestigated up to now.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 540, 'K', 0],[72.0, 548, 'K', 2]

P21
###Magnetic and structural properties of the double-perovskite Ca_2FeReO_6|W. Westerburg,O. Lang,C. Felser,W. Tremel,M. Waldeck,F. Renz,P. Guetlich,C. Ritter,G. Jakob###
(846245, 846247)
 We found at 548 K a monoclinic unit cell (spacegroup P21/n) with a5.4366(5) A, b<missing VAR>5.5393(5) A, c<missing VAR>7.7344(5) A, andbeta90.044(4) deg.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 540, 'K', 2],[16.0, 548, 'K', 0]

Fe
###Magnetic and structural properties of the double-perovskite Ca_2FeReO_6|W. Westerburg,O. Lang,C. Felser,W. Tremel,M. Waldeck,F. Renz,P. Guetlich,C. Ritter,G. Jakob###
(846355, 846355)
 57-Fe-Moessbauerspectroscopy measurements show the presence of four different Fe(3) positionsindicating two different phases at room temperature, indistinguishable in thediffraction experiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[184.0, 540, 'K', 5],[126.0, 548, 'K', 3]

GaAs
###A New Class of Magnetoresistance Oscillations: Interaction of a Two-Dimensional Electron Gas with Leaky Interface Phonons|M. A. Zudov,I. V. Ponomarev,A. L. Efros,R. R. Du,J. A. Simmons,J. L. Reno###
(846530, 846531)
 We report on a new class of magnetoresistance oscillations observed in ahigh-mobility two-dimensional electron gas (2DEG) in GaAs-Alx<missing VAR>Ga1-xAsheterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 0.3, 'T', 1],[55.0, 9, 'K', 1],[119.0, 2, 'DEG', 2]

Al
###A New Class of Magnetoresistance Oscillations: Interaction of a Two-Dimensional Electron Gas with Leaky Interface Phonons|M. A. Zudov,I. V. Ponomarev,A. L. Efros,R. R. Du,J. A. Simmons,J. L. Reno###
(846533, 846533)
 We report on a new class of magnetoresistance oscillations observed in ahigh-mobility two-dimensional electron gas (2DEG) in GaAs-Alx<missing VAR>Ga1-xAsheterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 0.3, 'T', 1],[53.0, 9, 'K', 1],[117.0, 2, 'DEG', 2]

Ga1-xAs
###A New Class of Magnetoresistance Oscillations: Interaction of a Two-Dimensional Electron Gas with Leaky Interface Phonons|M. A. Zudov,I. V. Ponomarev,A. L. Efros,R. R. Du,J. A. Simmons,J. L. Reno###
(846535, 846539)
 We report on a new class of magnetoresistance oscillations observed in ahigh-mobility two-dimensional electron gas (2DEG) in GaAs-Alx<missing VAR>Ga1-xAsheterostructures.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[21.0, 0.3, 'T', 1],[47.0, 9, 'K', 1],[111.0, 2, 'DEG', 2]

B
###A New Class of Magnetoresistance Oscillations: Interaction of a Two-Dimensional Electron Gas with Leaky Interface Phonons|M. A. Zudov,I. V. Ponomarev,A. L. Efros,R. R. Du,J. A. Simmons,J. L. Reno###
(846558, 846558)
 Appearing in a weak magnetic field (B< 0.3 T) and only in anarrow temperature range (2 K <T<missing VAR>< 9 K), these oscillations are periodic in1/B with a frequency proportional to the electron Fermi wave vector, k<missing VAR>F.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 0.3, 'T', 0],[28.0, 9, 'K', 0],[92.0, 2, 'DEG', 1]

K
###A New Class of Magnetoresistance Oscillations: Interaction of a Two-Dimensional Electron Gas with Leaky Interface Phonons|M. A. Zudov,I. V. Ponomarev,A. L. Efros,R. R. Du,J. A. Simmons,J. L. Reno###
(846581, 846581)
 Appearing in a weak magnetic field (B< 0.3 T) and only in anarrow temperature range (2 K <T<missing VAR>< 9 K), these oscillations are periodic in1/B with a frequency proportional to the electron Fermi wave vector, k<missing VAR>F.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 0.3, 'T', 0],[5.0, 9, 'K', 0],[69.0, 2, 'DEG', 1]

B
###A New Class of Magnetoresistance Oscillations: Interaction of a Two-Dimensional Electron Gas with Leaky Interface Phonons|M. A. Zudov,I. V. Ponomarev,A. L. Efros,R. R. Du,J. A. Simmons,J. L. Reno###
(846603, 846603)
 Appearing in a weak magnetic field (B< 0.3 T) and only in anarrow temperature range (2 K <T<missing VAR>< 9 K), these oscillations are periodic in1/B with a frequency proportional to the electron Fermi wave vector, k<missing VAR>F.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 0.3, 'T', 0],[17.0, 9, 'K', 0],[47.0, 2, 'DEG', 1]

F
###A New Class of Magnetoresistance Oscillations: Interaction of a Two-Dimensional Electron Gas with Leaky Interface Phonons|M. A. Zudov,I. V. Ponomarev,A. L. Efros,R. R. Du,J. A. Simmons,J. L. Reno###
(846627, 846627)
 Appearing in a weak magnetic field (B< 0.3 T) and only in anarrow temperature range (2 K <T<missing VAR>< 9 K), these oscillations are periodic in1/B with a frequency proportional to the electron Fermi wave vector, k<missing VAR>F.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 0.3, 'T', 0],[41.0, 9, 'K', 0],[23.0, 2, 'DEG', 1]

F
###A New Class of Magnetoresistance Oscillations: Interaction of a Two-Dimensional Electron Gas with Leaky Interface Phonons|M. A. Zudov,I. V. Ponomarev,A. L. Efros,R. R. Du,J. A. Simmons,J. L. Reno###
(846676, 846676)
 Weinterpret the effect as a magnetophonon resonance of the 2DEG with leakyinterface-acoustic phonon modes carrying a wave vector q2kF.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 0.3, 'T', 1],[90.0, 9, 'K', 1],[26.0, 2, 'DEG', 0]

GaAs
###A New Class of Magnetoresistance Oscillations: Interaction of a Two-Dimensional Electron Gas with Leaky Interface Phonons|M. A. Zudov,I. V. Ponomarev,A. L. Efros,R. R. Du,J. A. Simmons,J. L. Reno###
(846700, 846701)
 Calculationsshow a few branches of such modes on the GaAs-Alx<missing VAR>Ga1-xAs interface, andtheir velocities are in quantitative agreement with the data.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 0.3, 'T', 2],[114.0, 9, 'K', 2],[50.0, 2, 'DEG', 1]

Al
###A New Class of Magnetoresistance Oscillations: Interaction of a Two-Dimensional Electron Gas with Leaky Interface Phonons|M. A. Zudov,I. V. Ponomarev,A. L. Efros,R. R. Du,J. A. Simmons,J. L. Reno###
(846703, 846703)
 Calculationsshow a few branches of such modes on the GaAs-Alx<missing VAR>Ga1-xAs interface, andtheir velocities are in quantitative agreement with the data.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 0.3, 'T', 2],[117.0, 9, 'K', 2],[53.0, 2, 'DEG', 1]

Ga1-xAs
###A New Class of Magnetoresistance Oscillations: Interaction of a Two-Dimensional Electron Gas with Leaky Interface Phonons|M. A. Zudov,I. V. Ponomarev,A. L. Efros,R. R. Du,J. A. Simmons,J. L. Reno###
(846705, 846709)
 Calculationsshow a few branches of such modes on the GaAs-Alx<missing VAR>Ga1-xAs interface, andtheir velocities are in quantitative agreement with the data.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[145.0, 0.3, 'T', 2],[119.0, 9, 'K', 2],[55.0, 2, 'DEG', 1]

MnO3
###Direct measurement of polaron binding energy in AMnO$_{3}$ as a function of the A site ionic size by photoinduced IR absorption|T. Mertelj,M. Hrovat,D. Kuščer,D. Mihailovic###
(846759, 846761)
Direct measurement of polaron binding energy in AMnO3 as a function of the A site ionic size by photoinduced IR<missing VAR> absorption.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 44, '%', 2]

I
###Direct measurement of polaron binding energy in AMnO$_{3}$ as a function of the A site ionic size by photoinduced IR absorption|T. Mertelj,M. Hrovat,D. Kuščer,D. Mihailovic###
(846785, 846785)
Direct measurement of polaron binding energy in AMnO3 as a function of the A site ionic size by photoinduced IR<missing VAR> absorption.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 44, '%', 2]

I
###Direct measurement of polaron binding energy in AMnO$_{3}$ as a function of the A site ionic size by photoinduced IR absorption|T. Mertelj,M. Hrovat,D. Kuščer,D. Mihailovic###
(846793, 846793)
 Photoinduced IR<missing VAR> absorption was measured in undoped (LaMn)1-deltaO3 and(NdMn)1-deltaO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 44, '%', 1]

(LaMn)1
###Direct measurement of polaron binding energy in AMnO$_{3}$ as a function of the A site ionic size by photoinduced IR absorption|T. Mertelj,M. Hrovat,D. Kuščer,D. Mihailovic###
(846806, 846810)
 Photoinduced IR<missing VAR> absorption was measured in undoped (LaMn)1-deltaO3 and(NdMn)1-deltaO3.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 44, '%', 1]

O3
###Direct measurement of polaron binding energy in AMnO$_{3}$ as a function of the A site ionic size by photoinduced IR absorption|T. Mertelj,M. Hrovat,D. Kuščer,D. Mihailovic###
(846813, 846814)
 Photoinduced IR<missing VAR> absorption was measured in undoped (LaMn)1-deltaO3 and(NdMn)1-deltaO3.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 44, '%', 1]

(NdMn)1
###Direct measurement of polaron binding energy in AMnO$_{3}$ as a function of the A site ionic size by photoinduced IR absorption|T. Mertelj,M. Hrovat,D. Kuščer,D. Mihailovic###
(846819, 846823)
 Photoinduced IR<missing VAR> absorption was measured in undoped (LaMn)1-deltaO3 and(NdMn)1-deltaO3.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 44, '%', 1]

O3
###Direct measurement of polaron binding energy in AMnO$_{3}$ as a function of the A site ionic size by photoinduced IR absorption|T. Mertelj,M. Hrovat,D. Kuščer,D. Mihailovic###
(846826, 846827)
 Photoinduced IR<missing VAR> absorption was measured in undoped (LaMn)1-deltaO3 and(NdMn)1-deltaO3.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 44, '%', 1]

La3
###Direct measurement of polaron binding energy in AMnO$_{3}$ as a function of the A site ionic size by photoinduced IR absorption|T. Mertelj,M. Hrovat,D. Kuščer,D. Mihailovic###
(846866, 846867)
 We observe broadening and a 44% increase of themidinfrared anti-Jahn-Teller polaron peak energy when La3 is replaced withsmaller Nd3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 44, '%', 0]

Nd3
###Direct measurement of polaron binding energy in AMnO$_{3}$ as a function of the A site ionic size by photoinduced IR absorption|T. Mertelj,M. Hrovat,D. Kuščer,D. Mihailovic###
(846878, 846879)
 We observe broadening and a 44% increase of themidinfrared anti-Jahn-Teller polaron peak energy when La3 is replaced withsmaller Nd3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 44, '%', 0]

PI
###Direct measurement of polaron binding energy in AMnO$_{3}$ as a function of the A site ionic size by photoinduced IR absorption|T. Mertelj,M. Hrovat,D. Kuščer,D. Mihailovic###
(846905, 846906)
 The absence of any concurent large frequency shifts of theobserved PI phonon bleaching peaks and the Brillouin-zone-center internalperovskite phonon modes measured by Raman and infrared spectroscopy indicatethat the polaron peak energy shift is mainly a consequence of an increase ofthe electron phonon coupling constant with decreasing ionic radius <r<missing VAR>A> onthe perovskite A site.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 44, '%', 1]

B
###Voltage and temperature dependence of the grain boundary tunneling magnetoresistance in manganites|C. Hoefener,J. B. Philipp,J. Klein,L. Alff,A. Marx,B. Buechner,R. Gross###
(847142, 847142)
 We have performed a systematic analysis of the voltage and temperaturedependence of the tunneling magnetoresistance (TMR) of grain boundaries (G<missing VAR>B) inthe manganites.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Voltage and temperature dependence of the grain boundary tunneling magnetoresistance in manganites|C. Hoefener,J. B. Philipp,J. Klein,L. Alff,A. Marx,B. Buechner,R. Gross###
(847339, 847339)
 Our analysis gives strong evidencethat the observed drastic decrease of the G<missing VAR>B-TMR in manganites is caused by animperfect tunneling barrier.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Resistivity and 1/f Noise in Non-Metallic Phase Separated Manganites|A. L. Rakhmanov,K. I. Kugel,Ya. M. Blanter,M. Yu. Kagan###
(847825, 847825)
 As a result of this tunneling, the droplets acquire orlose extra electrons forming metastable two-electron and empty states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Resistivity and 1/f Noise in Non-Metallic Phase Separated Manganites|A. L. Rakhmanov,K. I. Kugel,Ya. M. Blanter,M. Yu. Kagan###
(847868, 847868)
 In theframework of this model, explicit expressions for dc conductivity and noisepower of the system are derived.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OSF
###Temperature-Dependence of the Resistivity of a Dilute 2D Electron System in High Parallel Magnetic Field|K. M. Mertes,Hairong Zheng,S. A. Vitkalov,M. P. Sarachik,T. M. Klapwijk###
(848001, 848003)
 We report measurements of the resistance of silicon M<missing VAR>OSFE<missing VAR>Ts as a function oftemperature in high parallel magnetic fields where the 2D system of electronshas been shown to be fully spin-polarized.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 2, 'D', 1],[28.0, 2, 'D', 0],[134.0, 1.5, 'n', 2],[170.0, 10, '%', 2],[174.0, 0.25, 'K', 2],[177.0, 1.9, 'K', 2]

In
###Temperature-Dependence of the Resistivity of a Dilute 2D Electron System in High Parallel Magnetic Field|K. M. Mertes,Hairong Zheng,S. A. Vitkalov,M. P. Sarachik,T. M. Klapwijk###
(848089, 848089)
 In a field of10.8 T<missing VAR>, insulating behavior is found for densities up to ns approximately 1.35x<missing VAR> 1011 cm-2 or 1.5 nc<missing VAR>; above this density the resistance is a very weakfunction of temperature, varying less than 10% between 0.25 K and 1.90 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 2, 'D', 3],[58.0, 2, 'D', 2],[48.0, 1.5, 'n', 0],[84.0, 10, '%', 0],[88.0, 0.25, 'K', 0],[91.0, 1.9, 'K', 0]

At
###Temperature-Dependence of the Resistivity of a Dilute 2D Electron System in High Parallel Magnetic Field|K. M. Mertes,Hairong Zheng,S. A. Vitkalov,M. P. Sarachik,T. M. Klapwijk###
(848183, 848183)
 Atlow densities the resistance goes to infinity more rapidly as the temperatureis reduced than in zero field and the magnetoresistance diverges as T<missing VAR> goes to0.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[216.0, 2, 'D', 4],[152.0, 2, 'D', 3],[46.0, 1.5, 'n', 1],[10.0, 10, '%', 1],[6.0, 0.25, 'K', 1],[3.0, 1.9, 'K', 1]

La0.67Ca0.33MnO3
###Enhancement of magnetoresistance in manganite multilayers|A. Venimadhav,M. S. Hegde,V. Prasad,S. V. Subramanyam###
(848276, 848282)
 Magnanite multilayers have been fabricated using La0.67Ca0.33MnO3 as theferromagnetic layer and Pr0.7Ca0.3MnO3 and Nd0.5Ca0.5MnO3 as the spacer layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.066,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.134,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 98, '%', 2],[127.0, 41, '%', 3],[131.0, 5000, 'Oe', 3]

Pr0.7Ca0.3MnO3
###Enhancement of magnetoresistance in manganite multilayers|A. Venimadhav,M. S. Hegde,V. Prasad,S. V. Subramanyam###
(848295, 848301)
 Magnanite multilayers have been fabricated using La0.67Ca0.33MnO3 as theferromagnetic layer and Pr0.7Ca0.3MnO3 and Nd0.5Ca0.5MnO3 as the spacer layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 98, '%', 2],[108.0, 41, '%', 3],[112.0, 5000, 'Oe', 3]

Nd0.5Ca0.5MnO3
###Enhancement of magnetoresistance in manganite multilayers|A. Venimadhav,M. S. Hegde,V. Prasad,S. V. Subramanyam###
(848305, 848311)
 Magnanite multilayers have been fabricated using La0.67Ca0.33MnO3 as theferromagnetic layer and Pr0.7Ca0.3MnO3 and Nd0.5Ca0.5MnO3 as the spacer layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 98, '%', 2],[98.0, 41, '%', 3],[102.0, 5000, 'Oe', 3]

LaAlO3
###Enhancement of magnetoresistance in manganite multilayers|A. Venimadhav,M. S. Hegde,V. Prasad,S. V. Subramanyam###
(848335, 848338)
All the multilayers were grown on LaAlO3 (100) by pulse laser deposition.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 98, '%', 1],[71.0, 41, '%', 2],[75.0, 5000, 'Oe', 2]

H
###Enhancement of magnetoresistance in manganite multilayers|A. Venimadhav,M. S. Hegde,V. Prasad,S. V. Subramanyam###
(848365, 848365)
 Anenhanced magnetoresistnace (defined (R<missing VAR>H- R<missing VAR>0)/R<missing VAR>0) of more than 98% is observedin these multilayers.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 98, '%', 0],[44.0, 41, '%', 1],[48.0, 5000, 'Oe', 1]

LaMnO3
###Enhancement of magnetoresistance in manganite multilayers|A. Venimadhav,M. S. Hegde,V. Prasad,S. V. Subramanyam###
(848501, 848504)
 This is compared by replacing the spacer layerwith LaMnO3 where Mn exists only in 3 state and no enhancement is observed inthe La0.67Ca0.33MnO3 / LaMnO3 multilayers as double exchange mechanism can notbe induced by external magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 98, '%', 3],[92.0, 41, '%', 2],[88.0, 5000, 'Oe', 2]

Mn
###Enhancement of magnetoresistance in manganite multilayers|A. Venimadhav,M. S. Hegde,V. Prasad,S. V. Subramanyam###
(848508, 848508)
 This is compared by replacing the spacer layerwith LaMnO3 where Mn exists only in 3 state and no enhancement is observed inthe La0.67Ca0.33MnO3 / LaMnO3 multilayers as double exchange mechanism can notbe induced by external magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 98, '%', 3],[99.0, 41, '%', 2],[95.0, 5000, 'Oe', 2]

La0.67Ca0.33MnO3
###Enhancement of magnetoresistance in manganite multilayers|A. Venimadhav,M. S. Hegde,V. Prasad,S. V. Subramanyam###
(848535, 848541)
 This is compared by replacing the spacer layerwith LaMnO3 where Mn exists only in 3 state and no enhancement is observed inthe La0.67Ca0.33MnO3 / LaMnO3 multilayers as double exchange mechanism can notbe induced by external magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.066,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.134,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 98, '%', 3],[126.0, 41, '%', 2],[122.0, 5000, 'Oe', 2]

LaMnO3
###Enhancement of magnetoresistance in manganite multilayers|A. Venimadhav,M. S. Hegde,V. Prasad,S. V. Subramanyam###
(848545, 848548)
 This is compared by replacing the spacer layerwith LaMnO3 where Mn exists only in 3 state and no enhancement is observed inthe La0.67Ca0.33MnO3 / LaMnO3 multilayers as double exchange mechanism can notbe induced by external magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 98, '%', 3],[136.0, 41, '%', 2],[132.0, 5000, 'Oe', 2]

La0.96-yNd
###Reentrant spin glass transition in La$_{0.96-y}$Nd$_{y}$K$_{0.04}$MnO$_3$: origin and effects on the colossal magnetoresistivity|R. Mathieu,P. Svedlindh,P. Nordblad###
(848596, 848600)
Reentrant spin glass transition in La0.96-yNdy<missing VAR>K0.04MnO3 origin and effects on the colossal magnetoresistivity.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

K0.04MnO3
###Reentrant spin glass transition in La$_{0.96-y}$Nd$_{y}$K$_{0.04}$MnO$_3$: origin and effects on the colossal magnetoresistivity|R. Mathieu,P. Svedlindh,P. Nordblad###
(848602, 848606)
Reentrant spin glass transition in La0.96-yNdy<missing VAR>K0.04MnO3 origin and effects on the colossal magnetoresistivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0.7425742574257426,0,0,0,0,0,0,0,0,0,0,0.009900990099009901,0,0,0,0,0,0.24752475247524752,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.96-yNd
###Reentrant spin glass transition in La$_{0.96-y}$Nd$_{y}$K$_{0.04}$MnO$_3$: origin and effects on the colossal magnetoresistivity|R. Mathieu,P. Svedlindh,P. Nordblad###
(848637, 848641)
 Magnetic, electric and structural properties ofLa0.96-yNdy<missing VAR>K0.04MnO3delta with 0leq y<missing VAR> leq0.4 have beenstudied experimentally.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

K0.04MnO3
###Reentrant spin glass transition in La$_{0.96-y}$Nd$_{y}$K$_{0.04}$MnO$_3$: origin and effects on the colossal magnetoresistivity|R. Mathieu,P. Svedlindh,P. Nordblad###
(848643, 848647)
 Magnetic, electric and structural properties ofLa0.96-yNdy<missing VAR>K0.04MnO3delta with 0leq y<missing VAR> leq0.4 have beenstudied experimentally.
Featurization terminated normally.
0,0,0,0,0,0,0,0.7425742574257426,0,0,0,0,0,0,0,0,0,0,0.009900990099009901,0,0,0,0,0,0.24752475247524752,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La
###Reentrant spin glass transition in La$_{0.96-y}$Nd$_{y}$K$_{0.04}$MnO$_3$: origin and effects on the colossal magnetoresistivity|R. Mathieu,P. Svedlindh,P. Nordblad###
(848684, 848684)
 A disordered magnetic state is formed as La issubstituted by Nd, reflecting the competition between ferromagnetic (FM) doubleexchange and antiferromagnetic superexchange interactions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nd
###Reentrant spin glass transition in La$_{0.96-y}$Nd$_{y}$K$_{0.04}$MnO$_3$: origin and effects on the colossal magnetoresistivity|R. Mathieu,P. Svedlindh,P. Nordblad###
(848693, 848693)
 A disordered magnetic state is formed as La issubstituted by Nd, reflecting the competition between ferromagnetic (FM) doubleexchange and antiferromagnetic superexchange interactions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Reentrant spin glass transition in La$_{0.96-y}$Nd$_{y}$K$_{0.04}$MnO$_3$: origin and effects on the colossal magnetoresistivity|R. Mathieu,P. Svedlindh,P. Nordblad###
(848707, 848707)
 A disordered magnetic state is formed as La issubstituted by Nd, reflecting the competition between ferromagnetic (FM) doubleexchange and antiferromagnetic superexchange interactions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Reentrant spin glass transition in La$_{0.96-y}$Nd$_{y}$K$_{0.04}$MnO$_3$: origin and effects on the colossal magnetoresistivity|R. Mathieu,P. Svedlindh,P. Nordblad###
(848894, 848894)
 Areentrant spin glass (RSG) transition is evidenced, with low field ageingproperties in both the RSG and FM<missing VAR> phases, similar to those observed inarchetypal spin glass materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr2FeMoO6
###Cationic ordering control of magnetization in Sr2FeMoO6 double perovskite|Ll. Balcells,J. Navarro,M. Bibes,A. Roig,B. Martinez,J. Fontcuberta###
(848940, 848945)
Cationic ordering control of magnetization in Sr2FeMoO6 double perovskite.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 3.7, 'muB', 4]

Fe/Mo
###Cationic ordering control of magnetization in Sr2FeMoO6 double perovskite|Ll. Balcells,J. Navarro,M. Bibes,A. Roig,B. Martinez,J. Fontcuberta###
(848970, 848972)
 The role of the synthesis conditions on the cationic Fe/Mo ordering inSr2FeMoO6 double perovskite is addressed.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[99.0, 3.7, 'muB', 3]

Sr2FeMoO6
###Cationic ordering control of magnetization in Sr2FeMoO6 double perovskite|Ll. Balcells,J. Navarro,M. Bibes,A. Roig,B. Martinez,J. Fontcuberta###
(848979, 848984)
 The role of the synthesis conditions on the cationic Fe/Mo ordering inSr2FeMoO6 double perovskite is addressed.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 3.7, 'muB', 3]

Fe/Mo
###Cationic ordering control of magnetization in Sr2FeMoO6 double perovskite|Ll. Balcells,J. Navarro,M. Bibes,A. Roig,B. Martinez,J. Fontcuberta###
(849023, 849025)
 The Fe/Mo ordering has a profound impacton the saturation magnetization of the material.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[46.0, 3.7, 'muB', 1]

Fe
###Cationic ordering control of magnetization in Sr2FeMoO6 double perovskite|Ll. Balcells,J. Navarro,M. Bibes,A. Roig,B. Martinez,J. Fontcuberta###
(849102, 849102)
 Mossbaueranalysis reveals the existence of two distinguishable Fe sites in agreementwith the P4/mmm symmetry and a charge density at the Fe(m) ions significantlylarger than (3) suggesting a Fe contribution to the spin-down conduction band.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 3.7, 'muB', 2]

P4
###Cationic ordering control of magnetization in Sr2FeMoO6 double perovskite|Ll. Balcells,J. Navarro,M. Bibes,A. Roig,B. Martinez,J. Fontcuberta###
(849115, 849116)
 Mossbaueranalysis reveals the existence of two distinguishable Fe sites in agreementwith the P4/mmm symmetry and a charge density at the Fe(m) ions significantlylarger than (3) suggesting a Fe contribution to the spin-down conduction band.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 3.7, 'muB', 2]

Fe
###Cationic ordering control of magnetization in Sr2FeMoO6 double perovskite|Ll. Balcells,J. Navarro,M. Bibes,A. Roig,B. Martinez,J. Fontcuberta###
(849134, 849134)
 Mossbaueranalysis reveals the existence of two distinguishable Fe sites in agreementwith the P4/mmm symmetry and a charge density at the Fe(m) ions significantlylarger than (3) suggesting a Fe contribution to the spin-down conduction band.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 3.7, 'muB', 2]

Fe
###Cationic ordering control of magnetization in Sr2FeMoO6 double perovskite|Ll. Balcells,J. Navarro,M. Bibes,A. Roig,B. Martinez,J. Fontcuberta###
(849156, 849156)
 Mossbaueranalysis reveals the existence of two distinguishable Fe sites in agreementwith the P4/mmm symmetry and a charge density at the Fe(m) ions significantlylarger than (3) suggesting a Fe contribution to the spin-down conduction band.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 3.7, 'muB', 2]

Sr2FeMoO6
###Cationic ordering control of magnetization in Sr2FeMoO6 double perovskite|Ll. Balcells,J. Navarro,M. Bibes,A. Roig,B. Martinez,J. Fontcuberta###
(849192, 849197)
The implications of these findings for the synthesis of Sr2FeMoO6 havingoptimal magnetoresistance response are discussed.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 3.7, 'muB', 3]

Tc
###Superconductivity and Ferromagnetism from Effective Mass Reduction|J. E. Hirsch###
(849345, 849345)
 Experimental manifestation of thisphysics has been detected in both high Tc superconductors and largemagnetoresistance ferromagnets, as an anomalous transfer of spectral weight inoptical absorption from high to low frequencies as the ordered state develops.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Zn1-x
###Carrier-induced ferromagnetism in p-Zn1-xMnxTe|D. Ferrand,J. Cibert,A. Wasiela,C. Bourgognon,S. Tatarenko,G. Fishman,T. Andrearczyk,J. Jaroszynski,S. Kolesnik,T. Dietl,B. Barbara,D. Dufeu###
(849507, 849510)
Carrier-induced ferromagnetism in p<missing VAR>-Zn1-xMnxTe.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

Te
###Carrier-induced ferromagnetism in p-Zn1-xMnxTe|D. Ferrand,J. Cibert,A. Wasiela,C. Bourgognon,S. Tatarenko,G. Fishman,T. Andrearczyk,J. Jaroszynski,S. Kolesnik,T. Dietl,B. Barbara,D. Dufeu###
(849512, 849512)
Carrier-induced ferromagnetism in p<missing VAR>-Zn1-xMnxTe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Zn1-x
###Carrier-induced ferromagnetism in p-Zn1-xMnxTe|D. Ferrand,J. Cibert,A. Wasiela,C. Bourgognon,S. Tatarenko,G. Fishman,T. Andrearczyk,J. Jaroszynski,S. Kolesnik,T. Dietl,B. Barbara,D. Dufeu###
(849548, 849551)
 We present a systematic study of the ferromagnetic transition induced by theholes in nitrogen doped Zn1-xMnxTe epitaxial layers, with particular emphasison the values of the Curie-Weiss temperature as a function of the carrier andspin concentrations.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

Te
###Carrier-induced ferromagnetism in p-Zn1-xMnxTe|D. Ferrand,J. Cibert,A. Wasiela,C. Bourgognon,S. Tatarenko,G. Fishman,T. Andrearczyk,J. Jaroszynski,S. Kolesnik,T. Dietl,B. Barbara,D. Dufeu###
(849553, 849553)
 We present a systematic study of the ferromagnetic transition induced by theholes in nitrogen doped Zn1-xMnxTe epitaxial layers, with particular emphasison the values of the Curie-Weiss temperature as a function of the carrier andspin concentrations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Y
###Carrier-induced ferromagnetism in p-Zn1-xMnxTe|D. Ferrand,J. Cibert,A. Wasiela,C. Bourgognon,S. Tatarenko,G. Fishman,T. Andrearczyk,J. Jaroszynski,S. Kolesnik,T. Dietl,B. Barbara,D. Dufeu###
(849686, 849686)
 The experimental findings compare favorably, without adjustableparameters, with the prediction of the Rudermann-Kittel-Kasuya-Yosida (R<missing VAR>KKY)model or its continuous-medium limit, that is, the Zener model, provided thatthe presence of the competing antiferromagnetic spin-spin superexchangeinteraction is taken into account, and the complex structure of the valenceband is properly incorporated into the calculation of the spin susceptibilityof the hole liquid.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Carrier-induced ferromagnetism in p-Zn1-xMnxTe|D. Ferrand,J. Cibert,A. Wasiela,C. Bourgognon,S. Tatarenko,G. Fishman,T. Andrearczyk,J. Jaroszynski,S. Kolesnik,T. Dietl,B. Barbara,D. Dufeu###
(849797, 849797)
 In general terms, the findings demonstrate how theinterplay between the ferromagnetic R<missing VAR>KKY interaction, carrier localization, andintrinsic antiferromagnetic superexchange affects the ordering temperature andthe saturation value of magnetization in magnetically and electrostaticallydisordered systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

KKY
###Carrier-induced ferromagnetism in p-Zn1-xMnxTe|D. Ferrand,J. Cibert,A. Wasiela,C. Bourgognon,S. Tatarenko,G. Fishman,T. Andrearczyk,J. Jaroszynski,S. Kolesnik,T. Dietl,B. Barbara,D. Dufeu###
(849824, 849826)
 In general terms, the findings demonstrate how theinterplay between the ferromagnetic R<missing VAR>KKY interaction, carrier localization, andintrinsic antiferromagnetic superexchange affects the ordering temperature andthe saturation value of magnetization in magnetically and electrostaticallydisordered systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Electrical transport properties of bulk Ni$_{c}$Fe$_{1-c}$ alloys and related spin-valve systems|C. Blaas,L. Szunyogh,P. Weinberger,C. Sommers,P. M. Levy###
(849898, 849898)
Electrical transport properties of bulk Nic<missing VAR>Fe1-c alloys and related spin-valve systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe1-c
###Electrical transport properties of bulk Ni$_{c}$Fe$_{1-c}$ alloys and related spin-valve systems|C. Blaas,L. Szunyogh,P. Weinberger,C. Sommers,P. M. Levy###
(849900, 849903)
Electrical transport properties of bulk Nic<missing VAR>Fe1-c alloys and related spin-valve systems.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

Ni
###Electrical transport properties of bulk Ni$_{c}$Fe$_{1-c}$ alloys and related spin-valve systems|C. Blaas,L. Szunyogh,P. Weinberger,C. Sommers,P. M. Levy###
(849991, 849991)
 Within the Kubo-Greenwood formalism we use the fully relativistic,spin-polarized, screened Korringa-Kohn-Rostoker method together with thecoherent-potential approximation for layered systems to calculate theresistivity for the permalloy series Nic<missing VAR>Fe1-c.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe1-c
###Electrical transport properties of bulk Ni$_{c}$Fe$_{1-c}$ alloys and related spin-valve systems|C. Blaas,L. Szunyogh,P. Weinberger,C. Sommers,P. M. Levy###
(849993, 849996)
 Within the Kubo-Greenwood formalism we use the fully relativistic,spin-polarized, screened Korringa-Kohn-Rostoker method together with thecoherent-potential approximation for layered systems to calculate theresistivity for the permalloy series Nic<missing VAR>Fe1-c.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

B
###Shubnikov-de Haas effect and Yamaji oscillations in the antiferromagnetically ordered organic superconductor k-(BETS)2FeBr4: A Fermiology study|L. Balicas,J. S. Brooks,K. Storr,D. Graf,S. Uji,H. Shinagawa,E. Ojima,H. Fujiwara,H. Kobayashi,A. Kobayashi,M. Tokumoto###
(850199, 850199)
Shubnikov-de Haas effect and Yamaji oscillations in the antiferromagnetically ordered organic superconductor k<missing VAR>-(BETS)2FeBr4 A Fermiology study.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Shubnikov-de Haas effect and Yamaji oscillations in the antiferromagnetically ordered organic superconductor k-(BETS)2FeBr4: A Fermiology study|L. Balicas,J. S. Brooks,K. Storr,D. Graf,S. Uji,H. Shinagawa,E. Ojima,H. Fujiwara,H. Kobayashi,A. Kobayashi,M. Tokumoto###
(850202, 850202)
Shubnikov-de Haas effect and Yamaji oscillations in the antiferromagnetically ordered organic superconductor k<missing VAR>-(BETS)2FeBr4 A Fermiology study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeBr4
###Shubnikov-de Haas effect and Yamaji oscillations in the antiferromagnetically ordered organic superconductor k-(BETS)2FeBr4: A Fermiology study|L. Balicas,J. S. Brooks,K. Storr,D. Graf,S. Uji,H. Shinagawa,E. Ojima,H. Fujiwara,H. Kobayashi,A. Kobayashi,M. Tokumoto###
(850205, 850207)
Shubnikov-de Haas effect and Yamaji oscillations in the antiferromagnetically ordered organic superconductor k<missing VAR>-(BETS)2FeBr4 A Fermiology study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Shubnikov-de Haas effect and Yamaji oscillations in the antiferromagnetically ordered organic superconductor k-(BETS)2FeBr4: A Fermiology study|L. Balicas,J. S. Brooks,K. Storr,D. Graf,S. Uji,H. Shinagawa,E. Ojima,H. Fujiwara,H. Kobayashi,A. Kobayashi,M. Tokumoto###
(850226, 850226)
 Shubnikov-De Haas effect (SdH) effect and angular dependent magnetoresistanceoscillations (AMRO) were observed in the organic superconductorkappa-(BETS)2FeBr4.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Shubnikov-de Haas effect and Yamaji oscillations in the antiferromagnetically ordered organic superconductor k-(BETS)2FeBr4: A Fermiology study|L. Balicas,J. S. Brooks,K. Storr,D. Graf,S. Uji,H. Shinagawa,E. Ojima,H. Fujiwara,H. Kobayashi,A. Kobayashi,M. Tokumoto###
(850246, 850246)
 Shubnikov-De Haas effect (SdH) effect and angular dependent magnetoresistanceoscillations (AMRO) were observed in the organic superconductorkappa-(BETS)2FeBr4.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Shubnikov-de Haas effect and Yamaji oscillations in the antiferromagnetically ordered organic superconductor k-(BETS)2FeBr4: A Fermiology study|L. Balicas,J. S. Brooks,K. Storr,D. Graf,S. Uji,H. Shinagawa,E. Ojima,H. Fujiwara,H. Kobayashi,A. Kobayashi,M. Tokumoto###
(850265, 850265)
 Shubnikov-De Haas effect (SdH) effect and angular dependent magnetoresistanceoscillations (AMRO) were observed in the organic superconductorkappa-(BETS)2FeBr4.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Shubnikov-de Haas effect and Yamaji oscillations in the antiferromagnetically ordered organic superconductor k-(BETS)2FeBr4: A Fermiology study|L. Balicas,J. S. Brooks,K. Storr,D. Graf,S. Uji,H. Shinagawa,E. Ojima,H. Fujiwara,H. Kobayashi,A. Kobayashi,M. Tokumoto###
(850268, 850268)
 Shubnikov-De Haas effect (SdH) effect and angular dependent magnetoresistanceoscillations (AMRO) were observed in the organic superconductorkappa-(BETS)2FeBr4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeBr4
###Shubnikov-de Haas effect and Yamaji oscillations in the antiferromagnetically ordered organic superconductor k-(BETS)2FeBr4: A Fermiology study|L. Balicas,J. S. Brooks,K. Storr,D. Graf,S. Uji,H. Shinagawa,E. Ojima,H. Fujiwara,H. Kobayashi,A. Kobayashi,M. Tokumoto###
(850271, 850273)
 Shubnikov-De Haas effect (SdH) effect and angular dependent magnetoresistanceoscillations (AMRO) were observed in the organic superconductorkappa-(BETS)2FeBr4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Shubnikov-de Haas effect and Yamaji oscillations in the antiferromagnetically ordered organic superconductor k-(BETS)2FeBr4: A Fermiology study|L. Balicas,J. S. Brooks,K. Storr,D. Graf,S. Uji,H. Shinagawa,E. Ojima,H. Fujiwara,H. Kobayashi,A. Kobayashi,M. Tokumoto###
(850276, 850276)
 In contrast to its isostructural compoundkappa-(BETS)2FeCl4, SdH oscillations, for fields perpendicular to theconducting planes, reveal three Fermi Surface (FS) closed orbits alpha,beta, and gamma whose cross sectional areas are 19.8 %, 99.9 %, and 2.4 %of the first Brillouin zone, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Shubnikov-de Haas effect and Yamaji oscillations in the antiferromagnetically ordered organic superconductor k-(BETS)2FeBr4: A Fermiology study|L. Balicas,J. S. Brooks,K. Storr,D. Graf,S. Uji,H. Shinagawa,E. Ojima,H. Fujiwara,H. Kobayashi,A. Kobayashi,M. Tokumoto###
(850292, 850292)
 In contrast to its isostructural compoundkappa-(BETS)2FeCl4, SdH oscillations, for fields perpendicular to theconducting planes, reveal three Fermi Surface (FS) closed orbits alpha,beta, and gamma whose cross sectional areas are 19.8 %, 99.9 %, and 2.4 %of the first Brillouin zone, respectively.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Shubnikov-de Haas effect and Yamaji oscillations in the antiferromagnetically ordered organic superconductor k-(BETS)2FeBr4: A Fermiology study|L. Balicas,J. S. Brooks,K. Storr,D. Graf,S. Uji,H. Shinagawa,E. Ojima,H. Fujiwara,H. Kobayashi,A. Kobayashi,M. Tokumoto###
(850295, 850295)
 In contrast to its isostructural compoundkappa-(BETS)2FeCl4, SdH oscillations, for fields perpendicular to theconducting planes, reveal three Fermi Surface (FS) closed orbits alpha,beta, and gamma whose cross sectional areas are 19.8 %, 99.9 %, and 2.4 %of the first Brillouin zone, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeCl4
###Shubnikov-de Haas effect and Yamaji oscillations in the antiferromagnetically ordered organic superconductor k-(BETS)2FeBr4: A Fermiology study|L. Balicas,J. S. Brooks,K. Storr,D. Graf,S. Uji,H. Shinagawa,E. Ojima,H. Fujiwara,H. Kobayashi,A. Kobayashi,M. Tokumoto###
(850298, 850300)
 In contrast to its isostructural compoundkappa-(BETS)2FeCl4, SdH oscillations, for fields perpendicular to theconducting planes, reveal three Fermi Surface (FS) closed orbits alpha,beta, and gamma whose cross sectional areas are 19.8 %, 99.9 %, and 2.4 %of the first Brillouin zone, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Shubnikov-de Haas effect and Yamaji oscillations in the antiferromagnetically ordered organic superconductor k-(BETS)2FeBr4: A Fermiology study|L. Balicas,J. S. Brooks,K. Storr,D. Graf,S. Uji,H. Shinagawa,E. Ojima,H. Fujiwara,H. Kobayashi,A. Kobayashi,M. Tokumoto###
(850304, 850304)
 In contrast to its isostructural compoundkappa-(BETS)2FeCl4, SdH oscillations, for fields perpendicular to theconducting planes, reveal three Fermi Surface (FS) closed orbits alpha,beta, and gamma whose cross sectional areas are 19.8 %, 99.9 %, and 2.4 %of the first Brillouin zone, respectively.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(FS)
###Shubnikov-de Haas effect and Yamaji oscillations in the antiferromagnetically ordered organic superconductor k-(BETS)2FeBr4: A Fermiology study|L. Balicas,J. S. Brooks,K. Storr,D. Graf,S. Uji,H. Shinagawa,E. Ojima,H. Fujiwara,H. Kobayashi,A. Kobayashi,M. Tokumoto###
(850333, 850336)
 In contrast to its isostructural compoundkappa-(BETS)2FeCl4, SdH oscillations, for fields perpendicular to theconducting planes, reveal three Fermi Surface (FS) closed orbits alpha,beta, and gamma whose cross sectional areas are 19.8 %, 99.9 %, and 2.4 %of the first Brillouin zone, respectively.
Featurization successful!
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Shubnikov-de Haas effect and Yamaji oscillations in the antiferromagnetically ordered organic superconductor k-(BETS)2FeBr4: A Fermiology study|L. Balicas,J. S. Brooks,K. Storr,D. Graf,S. Uji,H. Shinagawa,E. Ojima,H. Fujiwara,H. Kobayashi,A. Kobayashi,M. Tokumoto###
(850531, 850531)
 The observed Yamaji-like AMRO indicates a 2-D<missing VAR> closed FS, warpedalong the kz direction.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FS
###Shubnikov-de Haas effect and Yamaji oscillations in the antiferromagnetically ordered organic superconductor k-(BETS)2FeBr4: A Fermiology study|L. Balicas,J. S. Brooks,K. Storr,D. Graf,S. Uji,H. Shinagawa,E. Ojima,H. Fujiwara,H. Kobayashi,A. Kobayashi,M. Tokumoto###
(850543, 850544)
 The observed Yamaji-like AMRO indicates a 2-D<missing VAR> closed FS, warpedalong the kz direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Transverse and in-plane modification of superconductivity and electronic structure in the quasi-two dimensional organic conductor $κ $--(BEDT-TTF)$_{2}$Cu(SCN)$_{2}$ by uniaxial stress|E. S. Choi,J. S. Brooks,S. Y. Han,L. Balicas,J. S. Qualls###
(850606, 850606)
Transverse and in-plane modification of superconductivity and electronic structure in the quasi-two dimensional organic conductor  --(BEDT-TTF)2Cu(SCN)2 by uniaxial stress.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[297.0, 2, ',', 6]

F
###Transverse and in-plane modification of superconductivity and electronic structure in the quasi-two dimensional organic conductor $κ $--(BEDT-TTF)$_{2}$Cu(SCN)$_{2}$ by uniaxial stress|E. S. Choi,J. S. Brooks,S. Y. Han,L. Balicas,J. S. Qualls###
(850613, 850613)
Transverse and in-plane modification of superconductivity and electronic structure in the quasi-two dimensional organic conductor  --(BEDT-TTF)2Cu(SCN)2 by uniaxial stress.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[290.0, 2, ',', 6]

Cu(SCN)2
###Transverse and in-plane modification of superconductivity and electronic structure in the quasi-two dimensional organic conductor $κ $--(BEDT-TTF)$_{2}$Cu(SCN)$_{2}$ by uniaxial stress|E. S. Choi,J. S. Brooks,S. Y. Han,L. Balicas,J. S. Qualls###
(850616, 850622)
Transverse and in-plane modification of superconductivity and electronic structure in the quasi-two dimensional organic conductor  --(BEDT-TTF)2Cu(SCN)2 by uniaxial stress.
Featurization terminated normally.
0,0,0,0,0,0.2857142857142857,0.2857142857142857,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[281.0, 2, ',', 6]

B
###Transverse and in-plane modification of superconductivity and electronic structure in the quasi-two dimensional organic conductor $κ $--(BEDT-TTF)$_{2}$Cu(SCN)$_{2}$ by uniaxial stress|E. S. Choi,J. S. Brooks,S. Y. Han,L. Balicas,J. S. Qualls###
(850669, 850669)
 We have employed uniaxial stress along the principal axes of the quasi-twodimensional organic superconductor kappa --(BEDT-TTF)2Cu(SCN)2.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[234.0, 2, ',', 5]

F
###Transverse and in-plane modification of superconductivity and electronic structure in the quasi-two dimensional organic conductor $κ $--(BEDT-TTF)$_{2}$Cu(SCN)$_{2}$ by uniaxial stress|E. S. Choi,J. S. Brooks,S. Y. Han,L. Balicas,J. S. Qualls###
(850676, 850676)
 We have employed uniaxial stress along the principal axes of the quasi-twodimensional organic superconductor kappa --(BEDT-TTF)2Cu(SCN)2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[227.0, 2, ',', 5]

Cu(SCN)2
###Transverse and in-plane modification of superconductivity and electronic structure in the quasi-two dimensional organic conductor $κ $--(BEDT-TTF)$_{2}$Cu(SCN)$_{2}$ by uniaxial stress|E. S. Choi,J. S. Brooks,S. Y. Han,L. Balicas,J. S. Qualls###
(850679, 850685)
 We have employed uniaxial stress along the principal axes of the quasi-twodimensional organic superconductor kappa --(BEDT-TTF)2Cu(SCN)2.
Featurization terminated normally.
0,0,0,0,0,0.2857142857142857,0.2857142857142857,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[218.0, 2, ',', 5]

B
###Transverse and in-plane modification of superconductivity and electronic structure in the quasi-two dimensional organic conductor $κ $--(BEDT-TTF)$_{2}$Cu(SCN)$_{2}$ by uniaxial stress|E. S. Choi,J. S. Brooks,S. Y. Han,L. Balicas,J. S. Qualls###
(850750, 850750)
 The effect of uniaxial stress on thesuperconducting transition temperature Tc and critical field Bc<missing VAR>2 isfound to be anisotropic.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 2, ',', 3]

B
###Transverse and in-plane modification of superconductivity and electronic structure in the quasi-two dimensional organic conductor $κ $--(BEDT-TTF)$_{2}$Cu(SCN)$_{2}$ by uniaxial stress|E. S. Choi,J. S. Brooks,S. Y. Han,L. Balicas,J. S. Qualls###
(850787, 850787)
There is an indication of an increase in Tc andBc<missing VAR>2 for in-plane stress, but both parameters decrease rapidly fortransverse (inter-plane) stress.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 2, ',', 2]

B
###Transverse and in-plane modification of superconductivity and electronic structure in the quasi-two dimensional organic conductor $κ $--(BEDT-TTF)$_{2}$Cu(SCN)$_{2}$ by uniaxial stress|E. S. Choi,J. S. Brooks,S. Y. Han,L. Balicas,J. S. Qualls###
(850901, 850901)
 The stress dependence of a resistive anomaly in themagnetoresistance, which is associated with the critical field Bc<missing VAR>2, isalso investigated.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 2, ',', 0]

AlGaAs/GaAs
###Leaky interface phonons in AlGaAs/GaAs structures|I. V. Ponomarev,A. L. Efros###
(851002, 851007)
Leaky interface phonons in AlGaAs/GaAs structures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[100.0, 64, ',', 3],[155.0, 64, 'roots', 4]

Al0.3Ga0.7As/GaAs
###Leaky interface phonons in AlGaAs/GaAs structures|I. V. Ponomarev,A. L. Efros###
(851208, 851215)
 The calculations havebeen made for the interface Al0.3Ga0.7As/GaAs.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[101.0, 64, ',', 3],[46.0, 64, 'roots', 2]

In
###Leaky interface phonons in AlGaAs/GaAs structures|I. V. Ponomarev,A. L. Efros###
(851218, 851218)
 In this case allphysical interface modes have been shown to be leaky.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 64, ',', 4],[56.0, 64, 'roots', 3]

B
###Formation of two-dimensional weak localization in conducting Langmuir-Blodgett films|Yasuo Ishizaki,Mitsuru Izumi,Hitoshi Ohnuki,Krystyna Kalita-Lipinska,Tatsuro Imakubo,Keiji Kobayashi###
(851712, 851712)
 We report the magnetotransport properties up to 7 T in the organic highlyconducting Langmuir-Blodgett(L<missing VAR>B) films formed by a molecular association of theelectroactive donor molecule bis(ethylendioxy)tetrathiafulvalene (BEDO-TTF) andstearic acid CH3(CH2)16COOH.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 7, 'T', 0],[208.0, 2, 'D', 3]

B
###Formation of two-dimensional weak localization in conducting Langmuir-Blodgett films|Yasuo Ishizaki,Mitsuru Izumi,Hitoshi Ohnuki,Krystyna Kalita-Lipinska,Tatsuro Imakubo,Keiji Kobayashi###
(851745, 851745)
 We report the magnetotransport properties up to 7 T in the organic highlyconducting Langmuir-Blodgett(L<missing VAR>B) films formed by a molecular association of theelectroactive donor molecule bis(ethylendioxy)tetrathiafulvalene (BEDO-TTF) andstearic acid CH3(CH2)16COOH.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 7, 'T', 0],[175.0, 2, 'D', 3]

O
###Formation of two-dimensional weak localization in conducting Langmuir-Blodgett films|Yasuo Ishizaki,Mitsuru Izumi,Hitoshi Ohnuki,Krystyna Kalita-Lipinska,Tatsuro Imakubo,Keiji Kobayashi###
(851748, 851748)
 We report the magnetotransport properties up to 7 T in the organic highlyconducting Langmuir-Blodgett(L<missing VAR>B) films formed by a molecular association of theelectroactive donor molecule bis(ethylendioxy)tetrathiafulvalene (BEDO-TTF) andstearic acid CH3(CH2)16COOH.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 7, 'T', 0],[172.0, 2, 'D', 3]

F
###Formation of two-dimensional weak localization in conducting Langmuir-Blodgett films|Yasuo Ishizaki,Mitsuru Izumi,Hitoshi Ohnuki,Krystyna Kalita-Lipinska,Tatsuro Imakubo,Keiji Kobayashi###
(851752, 851752)
 We report the magnetotransport properties up to 7 T in the organic highlyconducting Langmuir-Blodgett(L<missing VAR>B) films formed by a molecular association of theelectroactive donor molecule bis(ethylendioxy)tetrathiafulvalene (BEDO-TTF) andstearic acid CH3(CH2)16COOH.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 7, 'T', 0],[168.0, 2, 'D', 3]

CH3(CH2)16COOH
###Formation of two-dimensional weak localization in conducting Langmuir-Blodgett films|Yasuo Ishizaki,Mitsuru Izumi,Hitoshi Ohnuki,Krystyna Kalita-Lipinska,Tatsuro Imakubo,Keiji Kobayashi###
(851762, 851774)
 We report the magnetotransport properties up to 7 T in the organic highlyconducting Langmuir-Blodgett(L<missing VAR>B) films formed by a molecular association of theelectroactive donor molecule bis(ethylendioxy)tetrathiafulvalene (BEDO-TTF) andstearic acid CH3(CH2)16COOH.
Featurization terminated normally.
0.6428571428571429,0,0,0,0,0.32142857142857145,0,0.03571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 7, 'T', 0],[146.0, 2, 'D', 3]

B
###Formation of two-dimensional weak localization in conducting Langmuir-Blodgett films|Yasuo Ishizaki,Mitsuru Izumi,Hitoshi Ohnuki,Krystyna Kalita-Lipinska,Tatsuro Imakubo,Keiji Kobayashi###
(851867, 851867)
They are interpreted in the weak localization of two-dimensional (2D)electronic system based on the homogeneous conducting layer with the molecularsize thickness of BEDO-TTF.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 7, 'T', 2],[53.0, 2, 'D', 1]

O
###Formation of two-dimensional weak localization in conducting Langmuir-Blodgett films|Yasuo Ishizaki,Mitsuru Izumi,Hitoshi Ohnuki,Krystyna Kalita-Lipinska,Tatsuro Imakubo,Keiji Kobayashi###
(851870, 851870)
They are interpreted in the weak localization of two-dimensional (2D)electronic system based on the homogeneous conducting layer with the molecularsize thickness of BEDO-TTF.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[176.0, 7, 'T', 2],[50.0, 2, 'D', 1]

F
###Formation of two-dimensional weak localization in conducting Langmuir-Blodgett films|Yasuo Ishizaki,Mitsuru Izumi,Hitoshi Ohnuki,Krystyna Kalita-Lipinska,Tatsuro Imakubo,Keiji Kobayashi###
(851874, 851874)
They are interpreted in the weak localization of two-dimensional (2D)electronic system based on the homogeneous conducting layer with the molecularsize thickness of BEDO-TTF.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[180.0, 7, 'T', 2],[46.0, 2, 'D', 1]

B
###Formation of two-dimensional weak localization in conducting Langmuir-Blodgett films|Yasuo Ishizaki,Mitsuru Izumi,Hitoshi Ohnuki,Krystyna Kalita-Lipinska,Tatsuro Imakubo,Keiji Kobayashi###
(851936, 851936)
 The electronic length with phase memory is given atthe mesoscopic scale, which provides for the first time evidence of the 2Dcoherent charge transport in the conducting L<missing VAR>B films.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[242.0, 7, 'T', 3],[16.0, 2, 'D', 0]

La0.7Sr0.3
###The origin of high transport spin polarization in La$_{0.7}$Sr$_{0.3} $MnO$_{3}$: direct evidence for minority spin states|B. Nadgorny,I. I. Mazin,M. Osofsky,R. J. Soulen, Jr.,P. Broussard,R. M. Stroud,D. J. Singh,V. G. Harris,A. Arsenov,Ya. Mukovskii###
(851965, 851968)
The origin of high transport spin polarization in La0.7Sr0.3 MnO3 direct evidence for minority spin states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnO3
###The origin of high transport spin polarization in La$_{0.7}$Sr$_{0.3} $MnO$_{3}$: direct evidence for minority spin states|B. Nadgorny,I. I. Mazin,M. Osofsky,R. J. Soulen, Jr.,P. Broussard,R. M. Stroud,D. J. Singh,V. G. Harris,A. Arsenov,Ya. Mukovskii###
(851970, 851972)
The origin of high transport spin polarization in La0.7Sr0.3 MnO3 direct evidence for minority spin states.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.7Sr0.3MnO3
###The origin of high transport spin polarization in La$_{0.7}$Sr$_{0.3} $MnO$_{3}$: direct evidence for minority spin states|B. Nadgorny,I. I. Mazin,M. Osofsky,R. J. Soulen, Jr.,P. Broussard,R. M. Stroud,D. J. Singh,V. G. Harris,A. Arsenov,Ya. Mukovskii###
(852037, 852043)
 Using the point contact Andreev reflection technique, we have carried out asystematic study of the spin polarization in the colossal magnetoresistivemanganite, La0.7Sr0.3MnO3 (LSMO).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###The origin of high transport spin polarization in La$_{0.7}$Sr$_{0.3} $MnO$_{3}$: direct evidence for minority spin states|B. Nadgorny,I. I. Mazin,M. Osofsky,R. J. Soulen, Jr.,P. Broussard,R. M. Stroud,D. J. Singh,V. G. Harris,A. Arsenov,Ya. Mukovskii###
(852049, 852049)
 Using the point contact Andreev reflection technique, we have carried out asystematic study of the spin polarization in the colossal magnetoresistivemanganite, La0.7Sr0.3MnO3 (LSMO).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###The origin of high transport spin polarization in La$_{0.7}$Sr$_{0.3} $MnO$_{3}$: direct evidence for minority spin states|B. Nadgorny,I. I. Mazin,M. Osofsky,R. J. Soulen, Jr.,P. Broussard,R. M. Stroud,D. J. Singh,V. G. Harris,A. Arsenov,Ya. Mukovskii###
(852137, 852137)
 Our results strongly suggestthat LSMO does have minority spin states at the Fermi level.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Magnetization reversal triggered by spin injection in magnetic nanowires|J. -E. Wegrowe,D. Kelly,Ph. Guittienne,J-Ph. Ansermet###
(852297, 852297)
 It is shown that a pulsed current driven through Ni nanowires provokes anirreversible magnetization reversal at a field distant from the spontaneousswitching field Hsw by Delta H of as much as 40 % of Hsw.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Magnetization reversal triggered by spin injection in magnetic nanowires|J. -E. Wegrowe,D. Kelly,Ph. Guittienne,J-Ph. Ansermet###
(852331, 852331)
 It is shown that a pulsed current driven through Ni nanowires provokes anirreversible magnetization reversal at a field distant from the spontaneousswitching field Hsw by Delta H of as much as 40 % of Hsw.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Magnetization reversal triggered by spin injection in magnetic nanowires|J. -E. Wegrowe,D. Kelly,Ph. Guittienne,J-Ph. Ansermet###
(852338, 852338)
 It is shown that a pulsed current driven through Ni nanowires provokes anirreversible magnetization reversal at a field distant from the spontaneousswitching field Hsw by Delta H of as much as 40 % of Hsw.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Magnetization reversal triggered by spin injection in magnetic nanowires|J. -E. Wegrowe,D. Kelly,Ph. Guittienne,J-Ph. Ansermet###
(852354, 852354)
 It is shown that a pulsed current driven through Ni nanowires provokes anirreversible magnetization reversal at a field distant from the spontaneousswitching field Hsw by Delta H of as much as 40 % of Hsw.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Magnetization reversal triggered by spin injection in magnetic nanowires|J. -E. Wegrowe,D. Kelly,Ph. Guittienne,J-Ph. Ansermet###
(852450, 852450)
 Delta H is studied as afunction of the angle between the applied field and the wire, and also of thedirection of the pulsed current.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CaCu3Mn4O12
###Magneto-electronic Properties of a Ferrimagnetic Semiconductor: The Hybrid Cupromanganite CaCu3Mn4O12|Ruben Weht,Warren E. Pickett###
(852592, 852598)
Magneto-electronic Properties of a Ferrimagnetic Semiconductor The Hybrid Cupromanganite CaCu3Mn4O12.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.05,0,0,0,0,0.2,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CaCu3Mn4O12
###Magneto-electronic Properties of a Ferrimagnetic Semiconductor: The Hybrid Cupromanganite CaCu3Mn4O12|Ruben Weht,Warren E. Pickett###
(852609, 852615)
 The mixed manganite-cuprate CaCu3Mn4O12 is found, using density functionalmethods, to be a narrow gap (90 meV calculated) ferrimagnetic semiconductor.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.05,0,0,0,0,0.2,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Magneto-electronic Properties of a Ferrimagnetic Semiconductor: The Hybrid Cupromanganite CaCu3Mn4O12|Ruben Weht,Warren E. Pickett###
(852646, 852646)
 The mixed manganite-cuprate CaCu3Mn4O12 is found, using density functionalmethods, to be a narrow gap (90 meV calculated) ferrimagnetic semiconductor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Magneto-electronic Properties of a Ferrimagnetic Semiconductor: The Hybrid Cupromanganite CaCu3Mn4O12|Ruben Weht,Warren E. Pickett###
(852656, 852656)
 Cu(formally S1/2) antialigns with Mn (formally S3/2), and the net spin momentis 9 muB consistent with the formal spins.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S1
###Magneto-electronic Properties of a Ferrimagnetic Semiconductor: The Hybrid Cupromanganite CaCu3Mn4O12|Ruben Weht,Warren E. Pickett###
(852662, 852663)
 Cu(formally S1/2) antialigns with Mn (formally S3/2), and the net spin momentis 9 muB consistent with the formal spins.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Magneto-electronic Properties of a Ferrimagnetic Semiconductor: The Hybrid Cupromanganite CaCu3Mn4O12|Ruben Weht,Warren E. Pickett###
(852672, 852672)
 Cu(formally S1/2) antialigns with Mn (formally S3/2), and the net spin momentis 9 muB consistent with the formal spins.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S3
###Magneto-electronic Properties of a Ferrimagnetic Semiconductor: The Hybrid Cupromanganite CaCu3Mn4O12|Ruben Weht,Warren E. Pickett###
(852677, 852678)
 Cu(formally S1/2) antialigns with Mn (formally S3/2), and the net spin momentis 9 muB consistent with the formal spins.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Magneto-electronic Properties of a Ferrimagnetic Semiconductor: The Hybrid Cupromanganite CaCu3Mn4O12|Ruben Weht,Warren E. Pickett###
(852700, 852700)
 Cu(formally S1/2) antialigns with Mn (formally S3/2), and the net spin momentis 9 muB consistent with the formal spins.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Magneto-electronic Properties of a Ferrimagnetic Semiconductor: The Hybrid Cupromanganite CaCu3Mn4O12|Ruben Weht,Warren E. Pickett###
(852717, 852717)
 Holes have Cu d<missing VAR>xy-O p<missing VAR>sigma(i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Magneto-electronic Properties of a Ferrimagnetic Semiconductor: The Hybrid Cupromanganite CaCu3Mn4O12|Ruben Weht,Warren E. Pickett###
(852722, 852722)
 Holes have Cu d<missing VAR>xy-O p<missing VAR>sigma(i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Magneto-electronic Properties of a Ferrimagnetic Semiconductor: The Hybrid Cupromanganite CaCu3Mn4O12|Ruben Weht,Warren E. Pickett###
(852776, 852776)
 antibonding dpsigma) character with spins aligned antiparallel to thenet magnetization; electrons have the opposite spin and have mixed Cu d<missing VAR>xy -Mn eg character.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Magneto-electronic Properties of a Ferrimagnetic Semiconductor: The Hybrid Cupromanganite CaCu3Mn4O12|Ruben Weht,Warren E. Pickett###
(852784, 852784)
 antibonding dpsigma) character with spins aligned antiparallel to thenet magnetization; electrons have the opposite spin and have mixed Cu d<missing VAR>xy -Mn eg character.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Probing interactions in mesoscopic gold wires|F. Pierre,H. Pothier,D. Esteve,M. H. Devoret,A. B. Gougam,N. O. Birge###
(853143, 853143)
 The magnetoresistance isnegative at large field scales, and the resistance decreases logarithmicallywith increasing temperatures, indicating the presence of magnetic impurities,probably Fe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 8, 'K', 1],[65.0, 0.5, 'K', 1],[55.0, 0.5, 'K', 1]

Gd
###Doped magnetic moments in a disordered electron system: insulator-metal transition, spin glass and `cmr'|Sanjeev Kumar,Pinaki Majumdar###
(853258, 853258)
 Recent experiments on the amorphous magnetic semiconductor Gdx<missing VAR> Si1-x,Phys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 77, ',', 3],[31.0, 83, ',', 3],[43.0, 84, ',', 3],[56.0, 85, ',', 3]

Si1-x
###Doped magnetic moments in a disordered electron system: insulator-metal transition, spin glass and `cmr'|Sanjeev Kumar,Pinaki Majumdar###
(853261, 853264)
 Recent experiments on the amorphous magnetic semiconductor Gdx<missing VAR> Si1-x,Phys.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[13.0, 77, ',', 3],[25.0, 83, ',', 3],[37.0, 84, ',', 3],[50.0, 85, ',', 3]

In
###Doped magnetic moments in a disordered electron system: insulator-metal transition, spin glass and `cmr'|Sanjeev Kumar,Pinaki Majumdar###
(853469, 853469)
 In this paper we study a model of electrons coupled tostructural disorder and (classical) magnetic moments, through an essentiallyexact combination of spin Monte Carlo and fermion exact diagonalisation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[192.0, 77, ',', 3],[180.0, 83, ',', 3],[168.0, 84, ',', 3],[155.0, 85, ',', 3]

Pr1-xCa
###Stress-induced metallic behavior under magnetic field in Pr$_{1-x}$Ca$_{x}$MnO$_{3}$ (x = 0.5 and 0.4) thin films|W. Prellier,Ch. Simon,B. Mercey,M. Hervieu,A. M. Haghiri-Gosnet,D. Saurel,Ph. Lecoeur,B. Raveau###
(853619, 853623)
Stress-induced metallic behavior under magnetic field in Pr1-xCax<missing VAR>MnO3 (x<missing VAR>  0.5 and 0.4) thin films.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[9.0, 0.5, 'and', 0],[238.0, 25, 'Tesla', 4],[243.0, 5, 'Tesla', 4]

MnO3
###Stress-induced metallic behavior under magnetic field in Pr$_{1-x}$Ca$_{x}$MnO$_{3}$ (x = 0.5 and 0.4) thin films|W. Prellier,Ch. Simon,B. Mercey,M. Hervieu,A. M. Haghiri-Gosnet,D. Saurel,Ph. Lecoeur,B. Raveau###
(853625, 853627)
Stress-induced metallic behavior under magnetic field in Pr1-xCax<missing VAR>MnO3 (x<missing VAR>  0.5 and 0.4) thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 0.5, 'and', 0],[234.0, 25, 'Tesla', 4],[239.0, 5, 'Tesla', 4]

(CO)
###Stress-induced metallic behavior under magnetic field in Pr$_{1-x}$Ca$_{x}$MnO$_{3}$ (x = 0.5 and 0.4) thin films|W. Prellier,Ch. Simon,B. Mercey,M. Hervieu,A. M. Haghiri-Gosnet,D. Saurel,Ph. Lecoeur,B. Raveau###
(853733, 853736)
 Because of the strong coupling between thesmall structural distortions related to the charge-ordering (CO) and theresistive properties, the presence of the substrate prevents the fulldeveloppement of the charge ordering in Pr0.5Ca0.5MnO3,especially in the very thin films.
Featurization successful!
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 0.5, 'and', 2],[125.0, 25, 'Tesla', 2],[130.0, 5, 'Tesla', 2]

Pr0.5Ca0.5MnO3
###Stress-induced metallic behavior under magnetic field in Pr$_{1-x}$Ca$_{x}$MnO$_{3}$ (x = 0.5 and 0.4) thin films|W. Prellier,Ch. Simon,B. Mercey,M. Hervieu,A. M. Haghiri-Gosnet,D. Saurel,Ph. Lecoeur,B. Raveau###
(853777, 853783)
 Because of the strong coupling between thesmall structural distortions related to the charge-ordering (CO) and theresistive properties, the presence of the substrate prevents the fulldeveloppement of the charge ordering in Pr0.5Ca0.5MnO3,especially in the very thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 0.5, 'and', 2],[78.0, 25, 'Tesla', 2],[83.0, 5, 'Tesla', 2]

CO
###Stress-induced metallic behavior under magnetic field in Pr$_{1-x}$Ca$_{x}$MnO$_{3}$ (x = 0.5 and 0.4) thin films|W. Prellier,Ch. Simon,B. Mercey,M. Hervieu,A. M. Haghiri-Gosnet,D. Saurel,Ph. Lecoeur,B. Raveau###
(853809, 853810)
 For thicker films, the CO state exists, butis not fully developped.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[177.0, 0.5, 'and', 3],[51.0, 25, 'Tesla', 1],[56.0, 5, 'Tesla', 1]

CO
###Stress-induced metallic behavior under magnetic field in Pr$_{1-x}$Ca$_{x}$MnO$_{3}$ (x = 0.5 and 0.4) thin films|W. Prellier,Ch. Simon,B. Mercey,M. Hervieu,A. M. Haghiri-Gosnet,D. Saurel,Ph. Lecoeur,B. Raveau###
(853851, 853852)
 Correlatively, the magnetic field which is necessaryto suppress the CO is decreased drastically from 25 Tesla to about 5 Tesla onSrTiO3 substrates.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[219.0, 0.5, 'and', 4],[9.0, 25, 'Tesla', 0],[14.0, 5, 'Tesla', 0]

SrTiO3
###Stress-induced metallic behavior under magnetic field in Pr$_{1-x}$Ca$_{x}$MnO$_{3}$ (x = 0.5 and 0.4) thin films|W. Prellier,Ch. Simon,B. Mercey,M. Hervieu,A. M. Haghiri-Gosnet,D. Saurel,Ph. Lecoeur,B. Raveau###
(853871, 853874)
 Correlatively, the magnetic field which is necessaryto suppress the CO is decreased drastically from 25 Tesla to about 5 Tesla onSrTiO3 substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[239.0, 0.5, 'and', 4],[10.0, 25, 'Tesla', 0],[5.0, 5, 'Tesla', 0]

Pr0.6Ca0.4MnO3
###Stress-induced metallic behavior under magnetic field in Pr$_{1-x}$Ca$_{x}$MnO$_{3}$ (x = 0.5 and 0.4) thin films|W. Prellier,Ch. Simon,B. Mercey,M. Hervieu,A. M. Haghiri-Gosnet,D. Saurel,Ph. Lecoeur,B. Raveau###
(853910, 853916)
 We have also investigated the influence of the dopinglevel by studying the case of Pr0.6Ca0.4MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.08,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.12,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[278.0, 0.5, 'and', 5],[49.0, 25, 'Tesla', 1],[44.0, 5, 'Tesla', 1]

In
###Effect of the In-Plane Magnetic Field on Conduction of the Si-inversion Layer: Magnetic Field Driven Disorder|V. M. Pudalov,G. Brunthaler,A. Prinz,G. Bauer###
(853933, 853933)
Effect of the In-Plane Magnetic Field on Conduction of the Si-inversion Layer Magnetic Field Driven Disorder.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[276.0, 2, 'D', 5]

Si
###Effect of the In-Plane Magnetic Field on Conduction of the Si-inversion Layer: Magnetic Field Driven Disorder|V. M. Pudalov,G. Brunthaler,A. Prinz,G. Bauer###
(853949, 853949)
Effect of the In-Plane Magnetic Field on Conduction of the Si-inversion Layer Magnetic Field Driven Disorder.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[260.0, 2, 'D', 5]

Si
###Effect of the In-Plane Magnetic Field on Conduction of the Si-inversion Layer: Magnetic Field Driven Disorder|V. M. Pudalov,G. Brunthaler,A. Prinz,G. Bauer###
(854247, 854247)
 We demonstrate that the data for magneto- and temperaturedependence of the resistivity of Si-M<missing VAR>OS samples in parallel field may be welldescribed by a simple model of the magnetic field dependent disorder.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 2, 'D', 1]

OS
###Effect of the In-Plane Magnetic Field on Conduction of the Si-inversion Layer: Magnetic Field Driven Disorder|V. M. Pudalov,G. Brunthaler,A. Prinz,G. Bauer###
(854250, 854251)
 We demonstrate that the data for magneto- and temperaturedependence of the resistivity of Si-M<missing VAR>OS samples in parallel field may be welldescribed by a simple model of the magnetic field dependent disorder.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 2, 'D', 1]

In
###Critical Phenomena of Ferromagnetic Transition in Double-Exchange Systems|Yukitoshi Motome,Nobuo Furukawa###
(854348, 854348)
 In order to investigate strong interplaybetween charge and spin degrees of freedom, Monte Carlo technique is applied toinclude fluctuations in a controlled and unbiased manner.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Transport and magnetic anisotropy in CMR thin film La_{1-x}Ca_{x}MnO_{3} (x \approx 1/3) induced by a film-substrate interaction|B. I. Belevtsev,V. B. Krasovitsky,D. G. Naugle,K. D. D. Rathnayaka,A. Parasiris,S. R. Surthi,R. K. Pandey,M. A. Rom###
(854611, 854611)
Transport and magnetic anisotropy in CMR thin film La1-xCax<missing VAR>MnO3 (x<missing VAR> approx 1/3) induced by a film-substrate interaction.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La1-xCa
###Transport and magnetic anisotropy in CMR thin film La_{1-x}Ca_{x}MnO_{3} (x \approx 1/3) induced by a film-substrate interaction|B. I. Belevtsev,V. B. Krasovitsky,D. G. Naugle,K. D. D. Rathnayaka,A. Parasiris,S. R. Surthi,R. K. Pandey,M. A. Rom###
(854619, 854623)
Transport and magnetic anisotropy in CMR thin film La1-xCax<missing VAR>MnO3 (x<missing VAR> approx 1/3) induced by a film-substrate interaction.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

MnO3
###Transport and magnetic anisotropy in CMR thin film La_{1-x}Ca_{x}MnO_{3} (x \approx 1/3) induced by a film-substrate interaction|B. I. Belevtsev,V. B. Krasovitsky,D. G. Naugle,K. D. D. Rathnayaka,A. Parasiris,S. R. Surthi,R. K. Pandey,M. A. Rom###
(854625, 854627)
Transport and magnetic anisotropy in CMR thin film La1-xCax<missing VAR>MnO3 (x<missing VAR> approx 1/3) induced by a film-substrate interaction.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La1-xCa
###Transport and magnetic anisotropy in CMR thin film La_{1-x}Ca_{x}MnO_{3} (x \approx 1/3) induced by a film-substrate interaction|B. I. Belevtsev,V. B. Krasovitsky,D. G. Naugle,K. D. D. Rathnayaka,A. Parasiris,S. R. Surthi,R. K. Pandey,M. A. Rom###
(854677, 854681)
 We present a study of anisotropy of transport and magnetic properties inLa1-xCax<missing VAR>MnO3 (x<missing VAR> approx 1/3) film prepared by pulsed-laser depositiononto a LaAlO3 sunstrate.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

MnO3
###Transport and magnetic anisotropy in CMR thin film La_{1-x}Ca_{x}MnO_{3} (x \approx 1/3) induced by a film-substrate interaction|B. I. Belevtsev,V. B. Krasovitsky,D. G. Naugle,K. D. D. Rathnayaka,A. Parasiris,S. R. Surthi,R. K. Pandey,M. A. Rom###
(854683, 854685)
 We present a study of anisotropy of transport and magnetic properties inLa1-xCax<missing VAR>MnO3 (x<missing VAR> approx 1/3) film prepared by pulsed-laser depositiononto a LaAlO3 sunstrate.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaAlO3
###Transport and magnetic anisotropy in CMR thin film La_{1-x}Ca_{x}MnO_{3} (x \approx 1/3) induced by a film-substrate interaction|B. I. Belevtsev,V. B. Krasovitsky,D. G. Naugle,K. D. D. Rathnayaka,A. Parasiris,S. R. Surthi,R. K. Pandey,M. A. Rom###
(854714, 854717)
 We present a study of anisotropy of transport and magnetic properties inLa1-xCax<missing VAR>MnO3 (x<missing VAR> approx 1/3) film prepared by pulsed-laser depositiononto a LaAlO3 sunstrate.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Transport and magnetic anisotropy in CMR thin film La_{1-x}Ca_{x}MnO_{3} (x \approx 1/3) induced by a film-substrate interaction|B. I. Belevtsev,V. B. Krasovitsky,D. G. Naugle,K. D. D. Rathnayaka,A. Parasiris,S. R. Surthi,R. K. Pandey,M. A. Rom###
(854750, 854750)
 We found a non-monotonic dependence ofmagnetoresistance (MR) on magnetic field H for both H perpendicular andparallel to the film plane but perpendicular to the current.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Transport and magnetic anisotropy in CMR thin film La_{1-x}Ca_{x}MnO_{3} (x \approx 1/3) induced by a film-substrate interaction|B. I. Belevtsev,V. B. Krasovitsky,D. G. Naugle,K. D. D. Rathnayaka,A. Parasiris,S. R. Surthi,R. K. Pandey,M. A. Rom###
(854756, 854756)
 We found a non-monotonic dependence ofmagnetoresistance (MR) on magnetic field H for both H perpendicular andparallel to the film plane but perpendicular to the current.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Superconducting properties and Fermi-surface topology of the quasi-two-dimensional organic superconductor $λ$-(BETS)$_{2}$GaCl$_{4}$|Charles Mielke,John Singleton,Moon-Sun Nam,Neil Harrison,C. C. Agosta,B. Fravel,L. K. Montgomery###
(854977, 854977)
Superconducting properties and Fermi-surface topology of the quasi-two-dimensional organic superconductor -(BETS)2GaCl4.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 60, 'T', 2],[111.0, 30, 'T', 2]

S
###Superconducting properties and Fermi-surface topology of the quasi-two-dimensional organic superconductor $λ$-(BETS)$_{2}$GaCl$_{4}$|Charles Mielke,John Singleton,Moon-Sun Nam,Neil Harrison,C. C. Agosta,B. Fravel,L. K. Montgomery###
(854980, 854980)
Superconducting properties and Fermi-surface topology of the quasi-two-dimensional organic superconductor -(BETS)2GaCl4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 60, 'T', 2],[108.0, 30, 'T', 2]

GaCl4
###Superconducting properties and Fermi-surface topology of the quasi-two-dimensional organic superconductor $λ$-(BETS)$_{2}$GaCl$_{4}$|Charles Mielke,John Singleton,Moon-Sun Nam,Neil Harrison,C. C. Agosta,B. Fravel,L. K. Montgomery###
(854983, 854985)
Superconducting properties and Fermi-surface topology of the quasi-two-dimensional organic superconductor -(BETS)2GaCl4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 60, 'T', 2],[103.0, 30, 'T', 2]

H
###Superconducting properties and Fermi-surface topology of the quasi-two-dimensional organic superconductor $λ$-(BETS)$_{2}$GaCl$_{4}$|Charles Mielke,John Singleton,Moon-Sun Nam,Neil Harrison,C. C. Agosta,B. Fravel,L. K. Montgomery###
(855241, 855241)
The increased three-dimensionality of lbets is manifested in radiofrequencypenetration-depth measurements, which show a clear dimensional crossover in thebehaviour of Hc<missing VAR>2(T).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[174.0, 60, 'T', 2],[153.0, 30, 'T', 2]

Au
###Magnetoresistance of proximity coupled Au wires|D. A. Dikin,M. J. Black,V. Chandrasekhar###
(855327, 855327)
Magnetoresistance of proximity coupled Au wires.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Au
###Magnetoresistance of proximity coupled Au wires|D. A. Dikin,M. J. Black,V. Chandrasekhar###
(855353, 855353)
 We report measurements of the magnetoresistance (MR) of narrow Au wirescoupled to a superconducting Al contact on one end, and a normal Au contact onthe other.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Al
###Magnetoresistance of proximity coupled Au wires|D. A. Dikin,M. J. Black,V. Chandrasekhar###
(855366, 855366)
 We report measurements of the magnetoresistance (MR) of narrow Au wirescoupled to a superconducting Al contact on one end, and a normal Au contact onthe other.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Au
###Magnetoresistance of proximity coupled Au wires|D. A. Dikin,M. J. Black,V. Chandrasekhar###
(855383, 855383)
 We report measurements of the magnetoresistance (MR) of narrow Au wirescoupled to a superconducting Al contact on one end, and a normal Au contact onthe other.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Magnetoresistance of proximity coupled Au wires|D. A. Dikin,M. J. Black,V. Chandrasekhar###
(855408, 855408)
 The MR at low magnetic field B is quadratic in B, with acharacteristic field scale Bc<missing VAR> determined by phase coherent paths whichencompass not only the wire, but also the two contacts.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Magnetoresistance of proximity coupled Au wires|D. A. Dikin,M. J. Black,V. Chandrasekhar###
(855416, 855416)
 The MR at low magnetic field B is quadratic in B, with acharacteristic field scale Bc<missing VAR> determined by phase coherent paths whichencompass not only the wire, but also the two contacts.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Magnetoresistance of proximity coupled Au wires|D. A. Dikin,M. J. Black,V. Chandrasekhar###
(855430, 855430)
 The MR at low magnetic field B is quadratic in B, with acharacteristic field scale Bc<missing VAR> determined by phase coherent paths whichencompass not only the wire, but also the two contacts.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Magnetoresistance of proximity coupled Au wires|D. A. Dikin,M. J. Black,V. Chandrasekhar###
(855468, 855468)
 Bc<missing VAR> is essentiallytemperature independent at low temperatures, indicating that the area of thephase coherent paths is not determined by the superconducting coherence lengthLT in the normal metal, which is strongly temperature dependent at lowtemperatures.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Magnetoresistance of proximity coupled Au wires|D. A. Dikin,M. J. Black,V. Chandrasekhar###
(855605, 855605)
 We identify the relevant length scale as a combination of theelectron phase coherence length L<missing VAR>phi in the normal metal and the coherencelength xiS in the superconductor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Valley Splitting in Si-Inversion Layers at Low Magnetic Fields|V. M. Pudalov,A. Punnoose,G. Brunthaler,A. Prinz,G. Bauer###
(855628, 855628)
Valley Splitting in Si-Inversion Layers at Low Magnetic Fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 100, '%', 2],[187.0, 1.3, 'over', 3],[238.0, 3, '%', 4]

Si
###Valley Splitting in Si-Inversion Layers at Low Magnetic Fields|V. M. Pudalov,A. Punnoose,G. Brunthaler,A. Prinz,G. Bauer###
(855678, 855678)
 We report novel manifestation of the valley splitting for the two valleyelectron system in (100) Si-inversion layers at low carrier density.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 100, '%', 1],[137.0, 1.3, 'over', 2],[188.0, 3, '%', 3]

B0
###Valley Splitting in Si-Inversion Layers at Low Magnetic Fields|V. M. Pudalov,A. Punnoose,G. Brunthaler,A. Prinz,G. Bauer###
(855792, 855793)
 From the interferencepattern of oscillations we determined the valley splitting in the B0 limitwhich appears to vary only within a factor of 1.3 over the density range(3-7)x<missing VAR>1011/cm2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 100, '%', 1],[22.0, 1.3, 'over', 0],[73.0, 3, '%', 1]

Cu3-xAlMn
###Magnetic phase separation in ordered alloys|Jordi Marcos,Eduard Vives,Teresa Castan###
(856030, 856035)
 The model isconstructed from the experimental facts observed in Cu3-xAlMnx<missing VAR> and itincludes coupling between configurational and magnetic degrees of freedom whichare appropriated for reproducing the low temperature miscibility gap.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

V
###Theoretical Description of Resistive Behavior near a Quantum Vortex-Glass Transition|Hideharu Ishida,Ryusuke Ikeda###
(856302, 856302)
 Resistive behaviors at nonzero temperatures (T<missing VAR> > 0) reflecting a quantumvortex-glass (VG) transition (the so-called field-tunedsuperconductor-insulator transition at T<missing VAR>0) are studied based on a quantumGinzburg-Landau (GL) action for a s<missing VAR>-wave pairing case containing microscopicdetails.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[171.0, 2, 'D', 2],[294.0, 3, 'D', 3]

V
###Theoretical Description of Resistive Behavior near a Quantum Vortex-Glass Transition|Hideharu Ishida,Ryusuke Ikeda###
(856450, 856450)
 It is shown that the VG<missing VAR>contribution, G<missing VAR>vg(BBvg, T<missing VAR> to 0),to 2D fluctuation conductance at the VG<missing VAR>transition field Bvg depends on the strength of a repulsive-interactionbetween electrons and takes a universal value only in the ordinary dirty limitneglecting the electron-repulsion.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 2, 'D', 0],[146.0, 3, 'D', 1]

BB
###Theoretical Description of Resistive Behavior near a Quantum Vortex-Glass Transition|Hideharu Ishida,Ryusuke Ikeda###
(856460, 856461)
 It is shown that the VG<missing VAR>contribution, G<missing VAR>vg(BBvg, T<missing VAR> to 0),to 2D fluctuation conductance at the VG<missing VAR>transition field Bvg depends on the strength of a repulsive-interactionbetween electrons and takes a universal value only in the ordinary dirty limitneglecting the electron-repulsion.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 2, 'D', 0],[135.0, 3, 'D', 1]

V
###Theoretical Description of Resistive Behavior near a Quantum Vortex-Glass Transition|Hideharu Ishida,Ryusuke Ikeda###
(856483, 856483)
 It is shown that the VG<missing VAR>contribution, G<missing VAR>vg(BBvg, T<missing VAR> to 0),to 2D fluctuation conductance at the VG<missing VAR>transition field Bvg depends on the strength of a repulsive-interactionbetween electrons and takes a universal value only in the ordinary dirty limitneglecting the electron-repulsion.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 2, 'D', 0],[113.0, 3, 'D', 1]

B
###Theoretical Description of Resistive Behavior near a Quantum Vortex-Glass Transition|Hideharu Ishida,Ryusuke Ikeda###
(856491, 856491)
 It is shown that the VG<missing VAR>contribution, G<missing VAR>vg(BBvg, T<missing VAR> to 0),to 2D fluctuation conductance at the VG<missing VAR>transition field Bvg depends on the strength of a repulsive-interactionbetween electrons and takes a universal value only in the ordinary dirty limitneglecting the electron-repulsion.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 2, 'D', 0],[105.0, 3, 'D', 1]

B
###Theoretical Description of Resistive Behavior near a Quantum Vortex-Glass Transition|Hideharu Ishida,Ryusuke Ikeda###
(856555, 856555)
 Available resistivity data near Bvg arediscussed based on our results, and extensions to the cases of a d<missing VAR>-wave pairingand of 3D systems are briefly commented on.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 2, 'D', 1],[41.0, 3, 'D', 0]

F
###Spin-density-wave transition of (TMTSF)$_2$PF$_6$ at high magnetic fields|N. Matsunaga,K. Yamashita,H. Kotani,K. Nomura,T. Sasaki,T. Hanajiri,J. Yamada,S. Nakatsuji,H. Anzai###
(856632, 856632)
Spin-density-wave transition of (TMTSF)2PF6 at high magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 24, 'T', 1],[253.0, 16, 'K', 5],[281.0, 12, 'K', 6]

PF6
###Spin-density-wave transition of (TMTSF)$_2$PF$_6$ at high magnetic fields|N. Matsunaga,K. Yamashita,H. Kotani,K. Nomura,T. Sasaki,T. Hanajiri,J. Yamada,S. Nakatsuji,H. Anzai###
(856635, 856637)
Spin-density-wave transition of (TMTSF)2PF6 at high magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.8571428571428571,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 24, 'T', 1],[248.0, 16, 'K', 5],[276.0, 12, 'K', 6]

F
###Spin-density-wave transition of (TMTSF)$_2$PF$_6$ at high magnetic fields|N. Matsunaga,K. Yamashita,H. Kotani,K. Nomura,T. Sasaki,T. Hanajiri,J. Yamada,S. Nakatsuji,H. Anzai###
(856667, 856667)
 The transverse magnetoresistance of the Bechgaard salt (TMTSF)2PF6 hasbeen measured for various pressures, with the field up to 24 T parallel to thelowest conductivity direction c<missing VAR>ast.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 24, 'T', 0],[218.0, 16, 'K', 4],[246.0, 12, 'K', 5]

PF6
###Spin-density-wave transition of (TMTSF)$_2$PF$_6$ at high magnetic fields|N. Matsunaga,K. Yamashita,H. Kotani,K. Nomura,T. Sasaki,T. Hanajiri,J. Yamada,S. Nakatsuji,H. Anzai###
(856670, 856672)
 The transverse magnetoresistance of the Bechgaard salt (TMTSF)2PF6 hasbeen measured for various pressures, with the field up to 24 T parallel to thelowest conductivity direction c<missing VAR>ast.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.8571428571428571,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 24, 'T', 0],[213.0, 16, 'K', 4],[241.0, 12, 'K', 5]

S
###Spin-density-wave transition of (TMTSF)$_2$PF$_6$ at high magnetic fields|N. Matsunaga,K. Yamashita,H. Kotani,K. Nomura,T. Sasaki,T. Hanajiri,J. Yamada,S. Nakatsuji,H. Anzai###
(856748, 856748)
 A quadratic behavior is observed inthe magnetic field dependence of the spin-density-wave (SD<missing VAR>W) transitiontemperature T<missing VAR>rm SD<missing VAR>W.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 24, 'T', 1],[137.0, 16, 'K', 3],[165.0, 12, 'K', 4]

W
###Spin-density-wave transition of (TMTSF)$_2$PF$_6$ at high magnetic fields|N. Matsunaga,K. Yamashita,H. Kotani,K. Nomura,T. Sasaki,T. Hanajiri,J. Yamada,S. Nakatsuji,H. Anzai###
(856750, 856750)
 A quadratic behavior is observed inthe magnetic field dependence of the spin-density-wave (SD<missing VAR>W) transitiontemperature T<missing VAR>rm SD<missing VAR>W.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 24, 'T', 1],[135.0, 16, 'K', 3],[163.0, 12, 'K', 4]

S
###Spin-density-wave transition of (TMTSF)$_2$PF$_6$ at high magnetic fields|N. Matsunaga,K. Yamashita,H. Kotani,K. Nomura,T. Sasaki,T. Hanajiri,J. Yamada,S. Nakatsuji,H. Anzai###
(856761, 856761)
 A quadratic behavior is observed inthe magnetic field dependence of the spin-density-wave (SD<missing VAR>W) transitiontemperature T<missing VAR>rm SD<missing VAR>W.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 24, 'T', 1],[124.0, 16, 'K', 3],[152.0, 12, 'K', 4]

W
###Spin-density-wave transition of (TMTSF)$_2$PF$_6$ at high magnetic fields|N. Matsunaga,K. Yamashita,H. Kotani,K. Nomura,T. Sasaki,T. Hanajiri,J. Yamada,S. Nakatsuji,H. Anzai###
(856763, 856763)
 A quadratic behavior is observed inthe magnetic field dependence of the spin-density-wave (SD<missing VAR>W) transitiontemperature T<missing VAR>rm SD<missing VAR>W.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 24, 'T', 1],[122.0, 16, 'K', 3],[150.0, 12, 'K', 4]

S
###Spin-density-wave transition of (TMTSF)$_2$PF$_6$ at high magnetic fields|N. Matsunaga,K. Yamashita,H. Kotani,K. Nomura,T. Sasaki,T. Hanajiri,J. Yamada,S. Nakatsuji,H. Anzai###
(856776, 856776)
 With increasing pressure, T<missing VAR>rm SD<missing VAR>Wdecreases and the coefficient of the quadratic term increases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 24, 'T', 2],[109.0, 16, 'K', 2],[137.0, 12, 'K', 3]

W
###Spin-density-wave transition of (TMTSF)$_2$PF$_6$ at high magnetic fields|N. Matsunaga,K. Yamashita,H. Kotani,K. Nomura,T. Sasaki,T. Hanajiri,J. Yamada,S. Nakatsuji,H. Anzai###
(856778, 856778)
 With increasing pressure, T<missing VAR>rm SD<missing VAR>Wdecreases and the coefficient of the quadratic term increases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 24, 'T', 2],[107.0, 16, 'K', 2],[135.0, 12, 'K', 3]

S
###Spin-density-wave transition of (TMTSF)$_2$PF$_6$ at high magnetic fields|N. Matsunaga,K. Yamashita,H. Kotani,K. Nomura,T. Sasaki,T. Hanajiri,J. Yamada,S. Nakatsuji,H. Anzai###
(856864, 856864)
 Using a mean field theory,T<missing VAR>rm SD<missing VAR>W for the perfect nesting case is estimated as about 16 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 24, 'T', 4],[21.0, 16, 'K', 0],[49.0, 12, 'K', 1]

W
###Spin-density-wave transition of (TMTSF)$_2$PF$_6$ at high magnetic fields|N. Matsunaga,K. Yamashita,H. Kotani,K. Nomura,T. Sasaki,T. Hanajiri,J. Yamada,S. Nakatsuji,H. Anzai###
(856866, 856866)
 Using a mean field theory,T<missing VAR>rm SD<missing VAR>W for the perfect nesting case is estimated as about 16 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 24, 'T', 4],[19.0, 16, 'K', 0],[47.0, 12, 'K', 1]

S
###Spin-density-wave transition of (TMTSF)$_2$PF$_6$ at high magnetic fields|N. Matsunaga,K. Yamashita,H. Kotani,K. Nomura,T. Sasaki,T. Hanajiri,J. Yamada,S. Nakatsuji,H. Anzai###
(856908, 856908)
 Thismeans that even at ambient pressure where T<missing VAR>rm SD<missing VAR>W is 12 K, the SD<missing VAR>Wphase of (TMTSF)2PF6 is substantially suppressed by thetwo-dimensionality of the system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[211.0, 24, 'T', 5],[23.0, 16, 'K', 1],[5.0, 12, 'K', 0]

W
###Spin-density-wave transition of (TMTSF)$_2$PF$_6$ at high magnetic fields|N. Matsunaga,K. Yamashita,H. Kotani,K. Nomura,T. Sasaki,T. Hanajiri,J. Yamada,S. Nakatsuji,H. Anzai###
(856910, 856910)
 Thismeans that even at ambient pressure where T<missing VAR>rm SD<missing VAR>W is 12 K, the SD<missing VAR>Wphase of (TMTSF)2PF6 is substantially suppressed by thetwo-dimensionality of the system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[213.0, 24, 'T', 5],[25.0, 16, 'K', 1],[3.0, 12, 'K', 0]

S
###Spin-density-wave transition of (TMTSF)$_2$PF$_6$ at high magnetic fields|N. Matsunaga,K. Yamashita,H. Kotani,K. Nomura,T. Sasaki,T. Hanajiri,J. Yamada,S. Nakatsuji,H. Anzai###
(856918, 856918)
 Thismeans that even at ambient pressure where T<missing VAR>rm SD<missing VAR>W is 12 K, the SD<missing VAR>Wphase of (TMTSF)2PF6 is substantially suppressed by thetwo-dimensionality of the system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[221.0, 24, 'T', 5],[33.0, 16, 'K', 1],[5.0, 12, 'K', 0]

W
###Spin-density-wave transition of (TMTSF)$_2$PF$_6$ at high magnetic fields|N. Matsunaga,K. Yamashita,H. Kotani,K. Nomura,T. Sasaki,T. Hanajiri,J. Yamada,S. Nakatsuji,H. Anzai###
(856920, 856920)
 Thismeans that even at ambient pressure where T<missing VAR>rm SD<missing VAR>W is 12 K, the SD<missing VAR>Wphase of (TMTSF)2PF6 is substantially suppressed by thetwo-dimensionality of the system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[223.0, 24, 'T', 5],[35.0, 16, 'K', 1],[7.0, 12, 'K', 0]

F
###Spin-density-wave transition of (TMTSF)$_2$PF$_6$ at high magnetic fields|N. Matsunaga,K. Yamashita,H. Kotani,K. Nomura,T. Sasaki,T. Hanajiri,J. Yamada,S. Nakatsuji,H. Anzai###
(856932, 856932)
 Thismeans that even at ambient pressure where T<missing VAR>rm SD<missing VAR>W is 12 K, the SD<missing VAR>Wphase of (TMTSF)2PF6 is substantially suppressed by thetwo-dimensionality of the system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[235.0, 24, 'T', 5],[47.0, 16, 'K', 1],[19.0, 12, 'K', 0]

PF6
###Spin-density-wave transition of (TMTSF)$_2$PF$_6$ at high magnetic fields|N. Matsunaga,K. Yamashita,H. Kotani,K. Nomura,T. Sasaki,T. Hanajiri,J. Yamada,S. Nakatsuji,H. Anzai###
(856935, 856937)
 Thismeans that even at ambient pressure where T<missing VAR>rm SD<missing VAR>W is 12 K, the SD<missing VAR>Wphase of (TMTSF)2PF6 is substantially suppressed by thetwo-dimensionality of the system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.8571428571428571,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[238.0, 24, 'T', 5],[50.0, 16, 'K', 1],[22.0, 12, 'K', 0]

In
###Magnetism and Transport for Two-Dimensional Electrons : Absence of Stoner Ferromagnetism and Positive In-Plane Magnetoresistance in the Metallic Phase|Philippe Jacquod###
(856996, 856996)
Magnetism and Transport for Two-Dimensional Electrons  Absence of Stoner Ferromagnetism and Positive In-Plane Magnetoresistance in the Metallic Phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Magnetism and Transport for Two-Dimensional Electrons : Absence of Stoner Ferromagnetism and Positive In-Plane Magnetoresistance in the Metallic Phase|Philippe Jacquod###
(857021, 857021)
 We calculate the interaction kernel K for two-dimensional diffusiveelectrons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Magnetism and Transport for Two-Dimensional Electrons : Absence of Stoner Ferromagnetism and Positive In-Plane Magnetoresistance in the Metallic Phase|Philippe Jacquod###
(857115, 857115)
 At low temperature, this results in a largercoherence length for fully polarized electrons and thus in a positive in-planemagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Magnetism and Transport for Two-Dimensional Electrons : Absence of Stoner Ferromagnetism and Positive In-Plane Magnetoresistance in the Metallic Phase|Philippe Jacquod###
(857188, 857188)
 An applied in-plane magnetic field also induces anonmonotonous behavior of K at finite temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Hopping conductivity in heavily doped n-type GaAs layers in the quantum Hall effect regime|S. S. Murzin,M. Weiss,A. G. M. Jansen,K. Eberl###
(857283, 857284)
Hopping conductivity in heavily doped n<missing VAR>-type GaAs layers in the quantum Hall effect regime.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Hopping conductivity in heavily doped n-type GaAs layers in the quantum Hall effect regime|S. S. Murzin,M. Weiss,A. G. M. Jansen,K. Eberl###
(857325, 857326)
 We investigate the magnetoresistance of epitaxially grown, heavily dopedn<missing VAR>-type GaAs layers with thickness (40-50 nm) larger than the electronic meanfree path (23 nm).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nd0.5Ca0.5MnO3
###Control of the colossal magnetoresistance by strain effect in Nd$_{0.5}$Ca$_{0.5}$MnO$_{3}$ thin films|E. Rauwel-Buzin,W. Prellier,Ch. Simon,S. Mercone,B. Mercey,B. Raveau,J. Sebek,J. Hejtmanek###
(857610, 857616)
Control of the colossal magnetoresistance by strain effect in Nd0.5Ca0.5MnO3 thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 75, 'K', 3]

Nd0.5Ca0.5MnO3
###Control of the colossal magnetoresistance by strain effect in Nd$_{0.5}$Ca$_{0.5}$MnO$_{3}$ thin films|E. Rauwel-Buzin,W. Prellier,Ch. Simon,S. Mercone,B. Mercey,B. Raveau,J. Sebek,J. Hejtmanek###
(857629, 857635)
 Thin films of Nd0.5Ca0.5MnO3 manganites with colossalmagnetoresistance (CMR) properties have been synthesized by the Pulsed LaserDeposition technique on (100)-SrTiO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 75, 'K', 2]

C
###Control of the colossal magnetoresistance by strain effect in Nd$_{0.5}$Ca$_{0.5}$MnO$_{3}$ thin films|E. Rauwel-Buzin,W. Prellier,Ch. Simon,S. Mercone,B. Mercey,B. Raveau,J. Sebek,J. Hejtmanek###
(857647, 857647)
 Thin films of Nd0.5Ca0.5MnO3 manganites with colossalmagnetoresistance (CMR) properties have been synthesized by the Pulsed LaserDeposition technique on (100)-SrTiO3.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 75, 'K', 2]

SrTiO3
###Control of the colossal magnetoresistance by strain effect in Nd$_{0.5}$Ca$_{0.5}$MnO$_{3}$ thin films|E. Rauwel-Buzin,W. Prellier,Ch. Simon,S. Mercone,B. Mercey,B. Raveau,J. Sebek,J. Hejtmanek###
(857679, 857682)
 Thin films of Nd0.5Ca0.5MnO3 manganites with colossalmagnetoresistance (CMR) properties have been synthesized by the Pulsed LaserDeposition technique on (100)-SrTiO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 75, 'K', 2]

C
###Control of the colossal magnetoresistance by strain effect in Nd$_{0.5}$Ca$_{0.5}$MnO$_{3}$ thin films|E. Rauwel-Buzin,W. Prellier,Ch. Simon,S. Mercone,B. Mercey,B. Raveau,J. Sebek,J. Hejtmanek###
(857704, 857704)
 The lattice parameters of thesemanganites and correlatively their CMR properties can be controlled by thesubstrate temperature T<missing VAR>S.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 75, 'K', 1]

S
###Control of the colossal magnetoresistance by strain effect in Nd$_{0.5}$Ca$_{0.5}$MnO$_{3}$ thin films|E. Rauwel-Buzin,W. Prellier,Ch. Simon,S. Mercone,B. Mercey,B. Raveau,J. Sebek,J. Hejtmanek###
(857726, 857726)
 The lattice parameters of thesemanganites and correlatively their CMR properties can be controlled by thesubstrate temperature T<missing VAR>S.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 75, 'K', 1]

C
###Control of the colossal magnetoresistance by strain effect in Nd$_{0.5}$Ca$_{0.5}$MnO$_{3}$ thin films|E. Rauwel-Buzin,W. Prellier,Ch. Simon,S. Mercone,B. Mercey,B. Raveau,J. Sebek,J. Hejtmanek###
(857733, 857733)
 The maximum CMR effect at 75K, calculated as theratio rho (H0T)/rho (H7T) is 104 for a deposition temperature ofT<missing VAR>S680 degC.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 75, 'K', 0]

H0
###Control of the colossal magnetoresistance by strain effect in Nd$_{0.5}$Ca$_{0.5}$MnO$_{3}$ thin films|E. Rauwel-Buzin,W. Prellier,Ch. Simon,S. Mercone,B. Mercey,B. Raveau,J. Sebek,J. Hejtmanek###
(857755, 857756)
 The maximum CMR effect at 75K, calculated as theratio rho (H0T)/rho (H7T) is 104 for a deposition temperature ofT<missing VAR>S680 degC.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 75, 'K', 0]

H7
###Control of the colossal magnetoresistance by strain effect in Nd$_{0.5}$Ca$_{0.5}$MnO$_{3}$ thin films|E. Rauwel-Buzin,W. Prellier,Ch. Simon,S. Mercone,B. Mercey,B. Raveau,J. Sebek,J. Hejtmanek###
(857763, 857764)
 The maximum CMR effect at 75K, calculated as theratio rho (H0T)/rho (H7T) is 104 for a deposition temperature ofT<missing VAR>S680 degC.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 75, 'K', 0]

S680
###Control of the colossal magnetoresistance by strain effect in Nd$_{0.5}$Ca$_{0.5}$MnO$_{3}$ thin films|E. Rauwel-Buzin,W. Prellier,Ch. Simon,S. Mercone,B. Mercey,B. Raveau,J. Sebek,J. Hejtmanek###
(857785, 857786)
 The maximum CMR effect at 75K, calculated as theratio rho (H0T)/rho (H7T) is 104 for a deposition temperature ofT<missing VAR>S680 degC.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 75, 'K', 0]

C
###Control of the colossal magnetoresistance by strain effect in Nd$_{0.5}$Ca$_{0.5}$MnO$_{3}$ thin films|E. Rauwel-Buzin,W. Prellier,Ch. Simon,S. Mercone,B. Mercey,B. Raveau,J. Sebek,J. Hejtmanek###
(857789, 857789)
 The maximum CMR effect at 75K, calculated as theratio rho (H0T)/rho (H7T) is 104 for a deposition temperature ofT<missing VAR>S680 degC.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 75, 'K', 0]

Nd0.5Ca0.5MnO3
###Control of the colossal magnetoresistance by strain effect in Nd$_{0.5}$Ca$_{0.5}$MnO$_{3}$ thin films|E. Rauwel-Buzin,W. Prellier,Ch. Simon,S. Mercone,B. Mercey,B. Raveau,J. Sebek,J. Hejtmanek###
(857803, 857809)
 Structural studies show that theNd0.5Ca0.5MnO3 film is single phase, [010]-oriented and has apseudocubic symmetry of the perovskite subcell with a3.77AA at roomtemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 75, 'K', 1]

C
###Control of the colossal magnetoresistance by strain effect in Nd$_{0.5}$Ca$_{0.5}$MnO$_{3}$ thin films|E. Rauwel-Buzin,W. Prellier,Ch. Simon,S. Mercone,B. Mercey,B. Raveau,J. Sebek,J. Hejtmanek###
(857875, 857875)
 We suggest that correlation between lattice parameters, CMR andsubstrate temperature T<missing VAR>S result mainly from substrate-induced strainswhich can weaken the charge-ordered state at low temperature.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 75, 'K', 2]

S
###Control of the colossal magnetoresistance by strain effect in Nd$_{0.5}$Ca$_{0.5}$MnO$_{3}$ thin films|E. Rauwel-Buzin,W. Prellier,Ch. Simon,S. Mercone,B. Mercey,B. Raveau,J. Sebek,J. Hejtmanek###
(857887, 857887)
 We suggest that correlation between lattice parameters, CMR andsubstrate temperature T<missing VAR>S result mainly from substrate-induced strainswhich can weaken the charge-ordered state at low temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 75, 'K', 2]

C
###Fermi Surface Nesting and Nanoscale Fluctuating Charge/Orbital Ordering in Colossal Magnetoresistive Oxides|Y. -D. Chuang,A. D. Gromko,D. S. Dessau,T. Kimura,Y. Tokura###
(858013, 858013)
 We used high resolution angle-resolved photoemission spectroscopy to revealthe Fermi surface and key transport parameters of the metallic state of thelayered Colossal Magnetoresistive (CMR) oxide La1.2Sr1.8Mn2O7.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 90, '%', 2]

La1.2Sr1.8Mn2O7
###Fermi Surface Nesting and Nanoscale Fluctuating Charge/Orbital Ordering in Colossal Magnetoresistive Oxides|Y. -D. Chuang,A. D. Gromko,D. S. Dessau,T. Kimura,Y. Tokura###
(858020, 858027)
 We used high resolution angle-resolved photoemission spectroscopy to revealthe Fermi surface and key transport parameters of the metallic state of thelayered Colossal Magnetoresistive (CMR) oxide La1.2Sr1.8Mn2O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.09999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 90, '%', 2]

C
###Fermi Surface Nesting and Nanoscale Fluctuating Charge/Orbital Ordering in Colossal Magnetoresistive Oxides|Y. -D. Chuang,A. D. Gromko,D. S. Dessau,T. Kimura,Y. Tokura###
(858069, 858069)
 With theseparameters the calculated in-plane conductivity is nearly one order ofmagnitude larger than the measured D<missing VAR>C conductivity.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 90, '%', 1]

B
###Exchange Bias Theory: a Review|Miguel Kiwi###
(858256, 858256)
 Research on the exchange bias (E<missing VAR>B) phenomenon has witnessed a flurry ofactivity during recent years, which stems from its use in magnetic sensors andas stabilizers in magnetic reading heads.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 1956, 'but', 1]

B
###Exchange Bias Theory: a Review|Miguel Kiwi###
(858314, 858314)
 E<missing VAR>B was discovered in 1956 but itattracted only limited attention until these applications, closely related togiant magnetoresistance, were developed during the last decade.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 1956, 'but', 0]

In
###Exchange Bias Theory: a Review|Miguel Kiwi###
(858366, 858366)
 In this reviewI first give a short introduction, listing the most salient experimentalresults and what is required from an E<missing VAR>B theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 1956, 'but', 1]

I
###Exchange Bias Theory: a Review|Miguel Kiwi###
(858373, 858373)
 In this reviewI first give a short introduction, listing the most salient experimentalresults and what is required from an E<missing VAR>B theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 1956, 'but', 1]

B
###Exchange Bias Theory: a Review|Miguel Kiwi###
(858412, 858412)
 In this reviewI first give a short introduction, listing the most salient experimentalresults and what is required from an E<missing VAR>B theory.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 1956, 'but', 1]

I
###Exchange Bias Theory: a Review|Miguel Kiwi###
(858420, 858420)
 Next, I indicate some of theobstacles in the road towards a satisfactory understanding of the phenomenon.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 1956, 'but', 2]

F
###Current and Spin-Torque in Double Tunnel Barrier Ferromagnet - Superconductor - Ferromagnet Systems|Yaroslav Tserkovnyak,Arne Brataas###
(858644, 858644)
 We calculate the current and the spin-torque in small symmetric double tunnelbarrier ferromagnet - superconductor - ferromagnet (F-S-F) systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[236.0, 82, ',', 9]

S
###Current and Spin-Torque in Double Tunnel Barrier Ferromagnet - Superconductor - Ferromagnet Systems|Yaroslav Tserkovnyak,Arne Brataas###
(858646, 858646)
 We calculate the current and the spin-torque in small symmetric double tunnelbarrier ferromagnet - superconductor - ferromagnet (F-S-F) systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[234.0, 82, ',', 9]

F
###Current and Spin-Torque in Double Tunnel Barrier Ferromagnet - Superconductor - Ferromagnet Systems|Yaroslav Tserkovnyak,Arne Brataas###
(858648, 858648)
 We calculate the current and the spin-torque in small symmetric double tunnelbarrier ferromagnet - superconductor - ferromagnet (F-S-F) systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[232.0, 82, ',', 9]

In
###Current and Spin-Torque in Double Tunnel Barrier Ferromagnet - Superconductor - Ferromagnet Systems|Yaroslav Tserkovnyak,Arne Brataas###
(858701, 858701)
 In theelastic transport regime, it is demonstrated that the relative change in thecurrent (spin-torque) for F-S-F systems equals the relative change in thecurrent (spin-torque) for F-N-F systems upon changing the relativemagnetization direction of the two ferromagnets.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 82, ',', 7]

F
###Current and Spin-Torque in Double Tunnel Barrier Ferromagnet - Superconductor - Ferromagnet Systems|Yaroslav Tserkovnyak,Arne Brataas###
(858742, 858742)
 In theelastic transport regime, it is demonstrated that the relative change in thecurrent (spin-torque) for F-S-F systems equals the relative change in thecurrent (spin-torque) for F-N-F systems upon changing the relativemagnetization direction of the two ferromagnets.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 82, ',', 7]

S
###Current and Spin-Torque in Double Tunnel Barrier Ferromagnet - Superconductor - Ferromagnet Systems|Yaroslav Tserkovnyak,Arne Brataas###
(858744, 858744)
 In theelastic transport regime, it is demonstrated that the relative change in thecurrent (spin-torque) for F-S-F systems equals the relative change in thecurrent (spin-torque) for F-N-F systems upon changing the relativemagnetization direction of the two ferromagnets.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 82, ',', 7]

F
###Current and Spin-Torque in Double Tunnel Barrier Ferromagnet - Superconductor - Ferromagnet Systems|Yaroslav Tserkovnyak,Arne Brataas###
(858746, 858746)
 In theelastic transport regime, it is demonstrated that the relative change in thecurrent (spin-torque) for F-S-F systems equals the relative change in thecurrent (spin-torque) for F-N-F systems upon changing the relativemagnetization direction of the two ferromagnets.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 82, ',', 7]

F
###Current and Spin-Torque in Double Tunnel Barrier Ferromagnet - Superconductor - Ferromagnet Systems|Yaroslav Tserkovnyak,Arne Brataas###
(858773, 858773)
 In theelastic transport regime, it is demonstrated that the relative change in thecurrent (spin-torque) for F-S-F systems equals the relative change in thecurrent (spin-torque) for F-N-F systems upon changing the relativemagnetization direction of the two ferromagnets.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 82, ',', 7]

N
###Current and Spin-Torque in Double Tunnel Barrier Ferromagnet - Superconductor - Ferromagnet Systems|Yaroslav Tserkovnyak,Arne Brataas###
(858775, 858775)
 In theelastic transport regime, it is demonstrated that the relative change in thecurrent (spin-torque) for F-S-F systems equals the relative change in thecurrent (spin-torque) for F-N-F systems upon changing the relativemagnetization direction of the two ferromagnets.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 82, ',', 7]

F
###Current and Spin-Torque in Double Tunnel Barrier Ferromagnet - Superconductor - Ferromagnet Systems|Yaroslav Tserkovnyak,Arne Brataas###
(858777, 858777)
 In theelastic transport regime, it is demonstrated that the relative change in thecurrent (spin-torque) for F-S-F systems equals the relative change in thecurrent (spin-torque) for F-N-F systems upon changing the relativemagnetization direction of the two ferromagnets.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 82, ',', 7]

S
###Current and Spin-Torque in Double Tunnel Barrier Ferromagnet - Superconductor - Ferromagnet Systems|Yaroslav Tserkovnyak,Arne Brataas###
(858850, 858850)
 This differs from the resultsin the inelastic transport regime where spin-accumulation suppresses thesuperconducting gap and dramatically changes the magnetoresistance [S.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 82, ',', 6]

H
###Current and Spin-Torque in Double Tunnel Barrier Ferromagnet - Superconductor - Ferromagnet Systems|Yaroslav Tserkovnyak,Arne Brataas###
(858857, 858857)
Takahashi, H.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 82, ',', 5]

S
###Current and Spin-Torque in Double Tunnel Barrier Ferromagnet - Superconductor - Ferromagnet Systems|Yaroslav Tserkovnyak,Arne Brataas###
(858865, 858865)
 Imamura, and S.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 82, ',', 4]

InGaAs/InP
###Quantum criticality, particle-hole symmetry, and duality of the plateau-insulator transition in the quantum Hall regime|A. M. M. Pruisken,D. T. N. de Lang,L. A. Ponomarenko,A. de Visser###
(859034, 859039)
 We report new experimental data on the plateau-insulator transition in thequantum Hall regime, taken from a low mobility InGaAs/InP heterostructure.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Fe/Cr
###Enhancement of the electronic contribution to the low temperature specific heat of Fe/Cr magnetic multilayer|B. Revaz,M. -C. Cyrille,B. Zink,Ivan K. Schuller,F. Hellman###
(859294, 859296)
Enhancement of the electronic contribution to the low temperature specific heat of Fe/Cr magnetic multilayer.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[127.0, 4, '<', 3],[188.0, 4, '<', 4]

Fe23
###Enhancement of the electronic contribution to the low temperature specific heat of Fe/Cr magnetic multilayer|B. Revaz,M. -C. Cyrille,B. Zink,Ivan K. Schuller,F. Hellman###
(859325, 859326)
 We measured the low temperature specific heat of a sputtered(Fe23AA/Cr12AA)33 magnetic multilayer, as well as separate1000AA thick Fe and Cr films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 4, '<', 2],[158.0, 4, '<', 3]

Cr12
###Enhancement of the electronic contribution to the low temperature specific heat of Fe/Cr magnetic multilayer|B. Revaz,M. -C. Cyrille,B. Zink,Ivan K. Schuller,F. Hellman###
(859330, 859331)
 We measured the low temperature specific heat of a sputtered(Fe23AA/Cr12AA)33 magnetic multilayer, as well as separate1000AA thick Fe and Cr films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 4, '<', 2],[153.0, 4, '<', 3]

Fe
###Enhancement of the electronic contribution to the low temperature specific heat of Fe/Cr magnetic multilayer|B. Revaz,M. -C. Cyrille,B. Zink,Ivan K. Schuller,F. Hellman###
(859357, 859357)
 We measured the low temperature specific heat of a sputtered(Fe23AA/Cr12AA)33 magnetic multilayer, as well as separate1000AA thick Fe and Cr films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 4, '<', 2],[127.0, 4, '<', 3]

Cr
###Enhancement of the electronic contribution to the low temperature specific heat of Fe/Cr magnetic multilayer|B. Revaz,M. -C. Cyrille,B. Zink,Ivan K. Schuller,F. Hellman###
(859361, 859361)
 We measured the low temperature specific heat of a sputtered(Fe23AA/Cr12AA)33 magnetic multilayer, as well as separate1000AA thick Fe and Cr films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 4, '<', 2],[123.0, 4, '<', 3]

Fe
###Enhancement of the electronic contribution to the low temperature specific heat of Fe/Cr magnetic multilayer|B. Revaz,M. -C. Cyrille,B. Zink,Ivan K. Schuller,F. Hellman###
(859392, 859392)
 Magnetoresistance and magnetizationmeasurements on the multilayer demonstrated antiparallel coupling between theFe layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 4, '<', 1],[92.0, 4, '<', 2]

K
###Enhancement of the electronic contribution to the low temperature specific heat of Fe/Cr magnetic multilayer|B. Revaz,M. -C. Cyrille,B. Zink,Ivan K. Schuller,F. Hellman###
(859429, 859429)
 Using microcalorimeters made in our group, we measured the specificheat for 4<T<missing VAR><30 K and in magnetic fields up to 8 T<missing VAR> for the multilayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 4, '<', 0],[55.0, 4, '<', 1]

K
###Enhancement of the electronic contribution to the low temperature specific heat of Fe/Cr magnetic multilayer|B. Revaz,M. -C. Cyrille,B. Zink,Ivan K. Schuller,F. Hellman###
(859490, 859490)
 Thelow temperature electronic specific heat coefficient of the multilayer in thetemperature range 4<T<missing VAR><14 K is gammaML8.4 mJ/K2g<missing VAR>-at.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 4, '<', 1],[6.0, 4, '<', 0]

K2
###Enhancement of the electronic contribution to the low temperature specific heat of Fe/Cr magnetic multilayer|B. Revaz,M. -C. Cyrille,B. Zink,Ivan K. Schuller,F. Hellman###
(859502, 859503)
 Thelow temperature electronic specific heat coefficient of the multilayer in thetemperature range 4<T<missing VAR><14 K is gammaML8.4 mJ/K2g<missing VAR>-at.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 4, '<', 1],[18.0, 4, '<', 0]

Fe
###Enhancement of the electronic contribution to the low temperature specific heat of Fe/Cr magnetic multilayer|B. Revaz,M. -C. Cyrille,B. Zink,Ivan K. Schuller,F. Hellman###
(859528, 859528)
 This issignificantly larger than that measured for the Fe or Cr films (5.4 and 3.5mJ/K2mol respectively).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 4, '<', 2],[44.0, 4, '<', 1]

Cr
###Enhancement of the electronic contribution to the low temperature specific heat of Fe/Cr magnetic multilayer|B. Revaz,M. -C. Cyrille,B. Zink,Ivan K. Schuller,F. Hellman###
(859532, 859532)
 This issignificantly larger than that measured for the Fe or Cr films (5.4 and 3.5mJ/K2mol respectively).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 4, '<', 2],[48.0, 4, '<', 1]

K2
###Enhancement of the electronic contribution to the low temperature specific heat of Fe/Cr magnetic multilayer|B. Revaz,M. -C. Cyrille,B. Zink,Ivan K. Schuller,F. Hellman###
(859547, 859548)
 This issignificantly larger than that measured for the Fe or Cr films (5.4 and 3.5mJ/K2mol respectively).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 4, '<', 2],[63.0, 4, '<', 1]

No
###Enhancement of the electronic contribution to the low temperature specific heat of Fe/Cr magnetic multilayer|B. Revaz,M. -C. Cyrille,B. Zink,Ivan K. Schuller,F. Hellman###
(859555, 859555)
 No magnetic field dependence of gammaML wasobserved up to 8 T<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0
[132.0, 4, '<', 3],[71.0, 4, '<', 2]

Fe
###Enhancement of the electronic contribution to the low temperature specific heat of Fe/Cr magnetic multilayer|B. Revaz,M. -C. Cyrille,B. Zink,Ivan K. Schuller,F. Hellman###
(859628, 859628)
 These results can be explained by a softening of thephonon modes observed in the same data and the presence of an Fe-Cr alloy phaseat the interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, 4, '<', 4],[144.0, 4, '<', 3]

Cr
###Enhancement of the electronic contribution to the low temperature specific heat of Fe/Cr magnetic multilayer|B. Revaz,M. -C. Cyrille,B. Zink,Ivan K. Schuller,F. Hellman###
(859630, 859630)
 These results can be explained by a softening of thephonon modes observed in the same data and the presence of an Fe-Cr alloy phaseat the interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[207.0, 4, '<', 4],[146.0, 4, '<', 3]

MgB2
###Magnetotransport and the upper critical magnetic field in MgB2|P. Szabo,P. Samuely,A. G. M. Jansen,T. Klein,J. Marcus,D. Fruchart,S. Miraglia###
(859668, 859670)
Magnetotransport and the upper critical magnetic field in MgB2.
Featurization terminated normally.
0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 39.3, 'K', 2],[63.0, 20, 'K', 2],[82.0, 25, 'T', 2],[85.0, 1.5, 'K', 2]

MgB2
###Magnetotransport and the upper critical magnetic field in MgB2|P. Szabo,P. Samuely,A. G. M. Jansen,T. Klein,J. Marcus,D. Fruchart,S. Miraglia###
(859685, 859687)
 Magnetotransport measurements are presented on polycrystalline MgB2 samples.
Featurization terminated normally.
0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 39.3, 'K', 1],[46.0, 20, 'K', 1],[65.0, 25, 'T', 1],[68.0, 1.5, 'K', 1]

Tc
###Magnetotransport and the upper critical magnetic field in MgB2|P. Szabo,P. Samuely,A. G. M. Jansen,T. Klein,J. Marcus,D. Fruchart,S. Miraglia###
(859724, 859724)
The resistive upper critical magnetic field reveals a temperature dependencewith a positive curvature from Tc  39.3 K down to about 20 K, then changes toa slightly negative curvature reaching 25 T at 1.5 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 39.3, 'K', 0],[9.0, 20, 'K', 0],[28.0, 25, 'T', 0],[31.0, 1.5, 'K', 0]

MgB2
###Magnetotransport and the upper critical magnetic field in MgB2|P. Szabo,P. Samuely,A. G. M. Jansen,T. Klein,J. Marcus,D. Fruchart,S. Miraglia###
(859796, 859798)
 The 25- Tesla uppercritical field is much higher than what is known so far on polycrystals of MgB2but it is in agreement with recent data obtained on epitaxial MgB2 films.
Featurization terminated normally.
0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 39.3, 'K', 1],[63.0, 20, 'K', 1],[44.0, 25, 'T', 1],[41.0, 1.5, 'K', 1]

MgB2
###Magnetotransport and the upper critical magnetic field in MgB2|P. Szabo,P. Samuely,A. G. M. Jansen,T. Klein,J. Marcus,D. Fruchart,S. Miraglia###
(859823, 859825)
 The 25- Tesla uppercritical field is much higher than what is known so far on polycrystals of MgB2but it is in agreement with recent data obtained on epitaxial MgB2 films.
Featurization terminated normally.
0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 39.3, 'K', 1],[90.0, 20, 'K', 1],[71.0, 25, 'T', 1],[68.0, 1.5, 'K', 1]

BCS
###Magnetotransport and the upper critical magnetic field in MgB2|P. Szabo,P. Samuely,A. G. M. Jansen,T. Klein,J. Marcus,D. Fruchart,S. Miraglia###
(859847, 859849)
 Thedeviation of Bc2(T) from standard BCS might be due to the proposed two-gapsuperconductivity in this compound.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 39.3, 'K', 2],[114.0, 20, 'K', 2],[95.0, 25, 'T', 2],[92.0, 1.5, 'K', 2]

YBa2Cu3O6.25
###Magnetotransport Properties of Antiferromagnetic YBa_2Cu_3O_6.25 Single Crystals|E. Cimpoiasu,C. C. Almasan,A. P. Paulikas,B. W. Veal###
(859943, 859949)
Magnetotransport Properties of Antiferromagnetic YBa2Cu3O6.25 Single Crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5102040816326531,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.24489795918367346,0,0,0,0,0,0,0,0,0,0.08163265306122448,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16326530612244897,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magnetotransport Properties of Antiferromagnetic YBa_2Cu_3O_6.25 Single Crystals|E. Cimpoiasu,C. C. Almasan,A. P. Paulikas,B. W. Veal###
(859956, 859956)
 In-plane and out-of-plane magnetoresistivities (MR) of antiferromagneticYBa2Cu3O6.25 single crystals were measured in magnetic fields H appliedalong the (ab) plane.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YBa2Cu3O6.25
###Magnetotransport Properties of Antiferromagnetic YBa_2Cu_3O_6.25 Single Crystals|E. Cimpoiasu,C. C. Almasan,A. P. Paulikas,B. W. Veal###
(859980, 859986)
 In-plane and out-of-plane magnetoresistivities (MR) of antiferromagneticYBa2Cu3O6.25 single crystals were measured in magnetic fields H appliedalong the (ab) plane.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5102040816326531,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.24489795918367346,0,0,0,0,0,0,0,0,0,0.08163265306122448,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16326530612244897,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Magnetotransport Properties of Antiferromagnetic YBa_2Cu_3O_6.25 Single Crystals|E. Cimpoiasu,C. C. Almasan,A. P. Paulikas,B. W. Veal###
(860002, 860002)
 In-plane and out-of-plane magnetoresistivities (MR) of antiferromagneticYBa2Cu3O6.25 single crystals were measured in magnetic fields H appliedalong the (ab) plane.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magnetotransport Properties of Antiferromagnetic YBa_2Cu_3O_6.25 Single Crystals|E. Cimpoiasu,C. C. Almasan,A. P. Paulikas,B. W. Veal###
(860018, 860018)
 In-plane MR is a superposition of two components Thefirst component is strongly in-plane anisotropic, changing sign from negativewhen H is parallel to the electrical current I to positive when H isperpendicular to I.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Magnetotransport Properties of Antiferromagnetic YBa_2Cu_3O_6.25 Single Crystals|E. Cimpoiasu,C. C. Almasan,A. P. Paulikas,B. W. Veal###
(860066, 860066)
 In-plane MR is a superposition of two components Thefirst component is strongly in-plane anisotropic, changing sign from negativewhen H is parallel to the electrical current I to positive when H isperpendicular to I.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Magnetotransport Properties of Antiferromagnetic YBa_2Cu_3O_6.25 Single Crystals|E. Cimpoiasu,C. C. Almasan,A. P. Paulikas,B. W. Veal###
(860080, 860080)
 In-plane MR is a superposition of two components Thefirst component is strongly in-plane anisotropic, changing sign from negativewhen H is parallel to the electrical current I to positive when H isperpendicular to I.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Magnetotransport Properties of Antiferromagnetic YBa_2Cu_3O_6.25 Single Crystals|E. Cimpoiasu,C. C. Almasan,A. P. Paulikas,B. W. Veal###
(860088, 860088)
 In-plane MR is a superposition of two components Thefirst component is strongly in-plane anisotropic, changing sign from negativewhen H is parallel to the electrical current I to positive when H isperpendicular to I.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Magnetotransport Properties of Antiferromagnetic YBa_2Cu_3O_6.25 Single Crystals|E. Cimpoiasu,C. C. Almasan,A. P. Paulikas,B. W. Veal###
(860097, 860097)
 In-plane MR is a superposition of two components Thefirst component is strongly in-plane anisotropic, changing sign from negativewhen H is parallel to the electrical current I to positive when H isperpendicular to I.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Magnetotransport Properties of Antiferromagnetic YBa_2Cu_3O_6.25 Single Crystals|E. Cimpoiasu,C. C. Almasan,A. P. Paulikas,B. W. Veal###
(860115, 860115)
 The second component is positive, quadratic in H, andisotropic in the (ab)-plane.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Magnetotransport Properties of Antiferromagnetic YBa_2Cu_3O_6.25 Single Crystals|E. Cimpoiasu,C. C. Almasan,A. P. Paulikas,B. W. Veal###
(860218, 860218)
 The out-of-plane MR displays a fourfold symmetryupon in-plane rotation of the magnetic field, with maxima along the easy axesof antiferromagnetic spin ordering and minima along unfavorable directions ofspin orientation (45 degrees from the Cu-O-Cu bonds).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Magnetotransport Properties of Antiferromagnetic YBa_2Cu_3O_6.25 Single Crystals|E. Cimpoiasu,C. C. Almasan,A. P. Paulikas,B. W. Veal###
(860220, 860220)
 The out-of-plane MR displays a fourfold symmetryupon in-plane rotation of the magnetic field, with maxima along the easy axesof antiferromagnetic spin ordering and minima along unfavorable directions ofspin orientation (45 degrees from the Cu-O-Cu bonds).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Magnetotransport Properties of Antiferromagnetic YBa_2Cu_3O_6.25 Single Crystals|E. Cimpoiasu,C. C. Almasan,A. P. Paulikas,B. W. Veal###
(860222, 860222)
 The out-of-plane MR displays a fourfold symmetryupon in-plane rotation of the magnetic field, with maxima along the easy axesof antiferromagnetic spin ordering and minima along unfavorable directions ofspin orientation (45 degrees from the Cu-O-Cu bonds).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Ferromagnetic Domain Walls in finite systems: mean-field critical exponents and applications|B. Uchoa,G. G. Cabrera###
(860370, 860370)
 In this article, we investigate the general properties offerromagnetic domain walls of uniaxial crystals from the view point of theLandau free energy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 8, ',', 1]

In
###Ferromagnetic Domain Walls in finite systems: mean-field critical exponents and applications|B. Uchoa,G. G. Cabrera###
(860553, 860553)
 In the saturated regime, we discuss the role ofdomain walls in mesoscopic systems and ferromagnetic nanojunctions, relatingthe observed magnetoresistance with promising applications in the recent areaof spintronics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[236.0, 8, ',', 4]

CeNiBi2
###Magnetic and transport properties of the new antiferromagnetic Kondo-lattice CeNiBi2|M. H. Jung,A. H. Lacerda,T. Takabatake###
(860647, 860650)
Magnetic and transport properties of the new antiferromagnetic Kondo-lattice CeNiBi2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 6, 'K', 2],[119.0, 5, 'T', 3],[258.0, 18, 'T', 6]

CeNiBi2
###Magnetic and transport properties of the new antiferromagnetic Kondo-lattice CeNiBi2|M. H. Jung,A. H. Lacerda,T. Takabatake###
(860688, 860691)
 We report results of the first studies on the magnetic and transportproperties of a new material CeNiBi2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 6, 'K', 1],[78.0, 5, 'T', 2],[217.0, 18, 'T', 5]

N
###Magnetic and transport properties of the new antiferromagnetic Kondo-lattice CeNiBi2|M. H. Jung,A. H. Lacerda,T. Takabatake###
(860712, 860712)
 The magnetic susceptibility exhibits asharp peak at T<missing VAR>N  6K, indicating an antiferromagnetic phase transition.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 6, 'K', 0],[57.0, 5, 'T', 1],[196.0, 18, 'T', 4]

N
###Magnetic and transport properties of the new antiferromagnetic Kondo-lattice CeNiBi2|M. H. Jung,A. H. Lacerda,T. Takabatake###
(860738, 860738)
 Thisantiferromagnetic order below T<missing VAR>N is confirmed by magnetization measurement,which displays a metamagnetic-like transition at Hm<missing VAR>  5 T.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 6, 'K', 1],[31.0, 5, 'T', 0],[170.0, 18, 'T', 3]

H
###Magnetic and transport properties of the new antiferromagnetic Kondo-lattice CeNiBi2|M. H. Jung,A. H. Lacerda,T. Takabatake###
(860766, 860766)
 Thisantiferromagnetic order below T<missing VAR>N is confirmed by magnetization measurement,which displays a metamagnetic-like transition at Hm<missing VAR>  5 T.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 6, 'K', 1],[3.0, 5, 'T', 0],[142.0, 18, 'T', 3]

CeNiBi2
###Magnetic and transport properties of the new antiferromagnetic Kondo-lattice CeNiBi2|M. H. Jung,A. H. Lacerda,T. Takabatake###
(860808, 860811)
 Bothlow-temperature susceptibility and high-field magnetization are suggestive ofstrong crystalline-electric-field effect in CeNiBi2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 6, 'K', 2],[39.0, 5, 'T', 1],[97.0, 18, 'T', 2]

N
###Magnetic and transport properties of the new antiferromagnetic Kondo-lattice CeNiBi2|M. H. Jung,A. H. Lacerda,T. Takabatake###
(860851, 860851)
 The electricalresistivity shows the presence of Kondo and crystal-field effects with a sharpdrop below T<missing VAR>N due to the antiferromagnetic ordering.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 6, 'K', 3],[82.0, 5, 'T', 2],[57.0, 18, 'T', 1]

N
###Magnetic and transport properties of the new antiferromagnetic Kondo-lattice CeNiBi2|M. H. Jung,A. H. Lacerda,T. Takabatake###
(860873, 860873)
 This sharp drop below T<missing VAR>Nin the electrical resistivity is suppressed slightly to higher temperatures byan applied magnetic field to 18 T.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[159.0, 6, 'K', 4],[104.0, 5, 'T', 3],[35.0, 18, 'T', 0]

MgB2
###Observation of large anisotropy in c-axis oriented thin films of MgB$_{2}$ prepared by an in situ pulsed laser deposition process|S. R. Shinde,S. B. Ogale,A. Biswas,R. L. Greene,T. Venkatesan###
(860990, 860992)
Observation of large anisotropy in c<missing VAR>-axis oriented thin films of MgB2 prepared by an in situ pulsed laser deposition process.
Featurization terminated normally.
0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 100, 'to', 2],[142.0, 130, 'T', 2],[147.0, 10, 'T', 2],[213.0, 9, 'to', 3],[214.0, 13.0, 'The', 3]

(HC2)
###Observation of large anisotropy in c-axis oriented thin films of MgB$_{2}$ prepared by an in situ pulsed laser deposition process|S. R. Shinde,S. B. Ogale,A. Biswas,R. L. Greene,T. Venkatesan###
(861029, 861033)
 A large anisotropy in the upper critical field (HC2) is observed forMgB2 films grown in situ by a pulsed laser deposition process involvinggrowth and annealing of Mg and B multilayers.
Featurization successful!
0.3333333333333333,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 100, 'to', 1],[101.0, 130, 'T', 1],[106.0, 10, 'T', 1],[172.0, 9, 'to', 2],[173.0, 13.0, 'The', 2]

MgB2
###Observation of large anisotropy in c-axis oriented thin films of MgB$_{2}$ prepared by an in situ pulsed laser deposition process|S. R. Shinde,S. B. Ogale,A. Biswas,R. L. Greene,T. Venkatesan###
(861042, 861044)
 A large anisotropy in the upper critical field (HC2) is observed forMgB2 films grown in situ by a pulsed laser deposition process involvinggrowth and annealing of Mg and B multilayers.
Featurization terminated normally.
0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 100, 'to', 1],[90.0, 130, 'T', 1],[95.0, 10, 'T', 1],[161.0, 9, 'to', 2],[162.0, 13.0, 'The', 2]

Mg
###Observation of large anisotropy in c-axis oriented thin films of MgB$_{2}$ prepared by an in situ pulsed laser deposition process|S. R. Shinde,S. B. Ogale,A. Biswas,R. L. Greene,T. Venkatesan###
(861077, 861077)
 A large anisotropy in the upper critical field (HC2) is observed forMgB2 films grown in situ by a pulsed laser deposition process involvinggrowth and annealing of Mg and B multilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 100, 'to', 1],[57.0, 130, 'T', 1],[62.0, 10, 'T', 1],[128.0, 9, 'to', 2],[129.0, 13.0, 'The', 2]

B
###Observation of large anisotropy in c-axis oriented thin films of MgB$_{2}$ prepared by an in situ pulsed laser deposition process|S. R. Shinde,S. B. Ogale,A. Biswas,R. L. Greene,T. Venkatesan###
(861081, 861081)
 A large anisotropy in the upper critical field (HC2) is observed forMgB2 films grown in situ by a pulsed laser deposition process involvinggrowth and annealing of Mg and B multilayers.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 100, 'to', 1],[53.0, 130, 'T', 1],[58.0, 10, 'T', 1],[124.0, 9, 'to', 2],[125.0, 13.0, 'The', 2]

HC2
###Observation of large anisotropy in c-axis oriented thin films of MgB$_{2}$ prepared by an in situ pulsed laser deposition process|S. R. Shinde,S. B. Ogale,A. Biswas,R. L. Greene,T. Venkatesan###
(861124, 861126)
 Measurements of resistivity as afunction of temperature and magnetic field yield the estimated zero temperaturevalues of HC2 in the range 100 to 130 T and about 10 T, for the field inab plane and along c<missing VAR> axis, respectively, depending on the criterion chosen forthe transition temperature.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 100, 'to', 0],[8.0, 130, 'T', 0],[13.0, 10, 'T', 0],[79.0, 9, 'to', 1],[80.0, 13.0, 'The', 1]

No
###Observation of large anisotropy in c-axis oriented thin films of MgB$_{2}$ prepared by an in situ pulsed laser deposition process|S. R. Shinde,S. B. Ogale,A. Biswas,R. L. Greene,T. Venkatesan###
(861259, 861259)
 Nosignificant magnetoresistance is observed in the normal state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0
[126.0, 100, 'to', 2],[125.0, 130, 'T', 2],[120.0, 10, 'T', 2],[54.0, 9, 'to', 1],[53.0, 13.0, 'The', 1]

Tl2Mn2O7
###First order transition and phase separation in pyrochlores with colossal-magnetoresistance|P. Velasco,J. Mira,F. Guinea,J. Rivas,M. J. Martinez-Lope,J. A. Alonso,J. L. Martinez###
(861310, 861315)
 Tl2Mn2O7 pyrochlores present colossal magnetoresistance (CMR)around the long range ferromagnetic ordering temperature (T<missing VAR>C).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6363636363636364,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 83, ',', 5]

C
###First order transition and phase separation in pyrochlores with colossal-magnetoresistance|P. Velasco,J. Mira,F. Guinea,J. Rivas,M. J. Martinez-Lope,J. A. Alonso,J. L. Martinez###
(861326, 861326)
 Tl2Mn2O7 pyrochlores present colossal magnetoresistance (CMR)around the long range ferromagnetic ordering temperature (T<missing VAR>C).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 83, ',', 5]

C
###First order transition and phase separation in pyrochlores with colossal-magnetoresistance|P. Velasco,J. Mira,F. Guinea,J. Rivas,M. J. Martinez-Lope,J. A. Alonso,J. L. Martinez###
(861348, 861348)
 Tl2Mn2O7 pyrochlores present colossal magnetoresistance (CMR)around the long range ferromagnetic ordering temperature (T<missing VAR>C).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 83, ',', 5]

C
###First order transition and phase separation in pyrochlores with colossal-magnetoresistance|P. Velasco,J. Mira,F. Guinea,J. Rivas,M. J. Martinez-Lope,J. A. Alonso,J. L. Martinez###
(861446, 861446)
 Thehighest CMR effect, as in Tl1.8Cd0.2Mn2O7, corresponds to astronger first order character.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 83, ',', 1]

Tl1.8Cd0.2Mn2O7
###First order transition and phase separation in pyrochlores with colossal-magnetoresistance|P. Velasco,J. Mira,F. Guinea,J. Rivas,M. J. Martinez-Lope,J. A. Alonso,J. L. Martinez###
(861457, 861464)
 Thehighest CMR effect, as in Tl1.8Cd0.2Mn2O7, corresponds to astronger first order character.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6363636363636364,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.018181818181818184,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16363636363636364,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 83, ',', 1]

Mn4
###First order transition and phase separation in pyrochlores with colossal-magnetoresistance|P. Velasco,J. Mira,F. Guinea,J. Rivas,M. J. Martinez-Lope,J. A. Alonso,J. L. Martinez###
(861515, 861516)
 This character implies a second type ofmagnetic interaction, besides the direct superexchange between the Mn4ions, as well as a phase coexistence.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 83, ',', 2]

As
###Quantum Effects in the Conductivity of a Quasi 2D Electron Gas|M. Levanda,V. Fleurov###
(862177, 862177)
 As a result thecurrent flow profile increases and a negative longitudinal magnetoresistivityof the quasi 2D electron gas may be observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[262.0, 2, 'D', 6],[228.0, 2, 'D', 5],[97.0, 2, 'D', 2],[33.0, 2, 'D', 0]

Nd1-xSr
###Common features of nanoscale structural correlations in magnetoresistive manganites with ferromagnetic low-temperature state|V. Kiryukhin,T. Y. Koo,A. Borissov,Y. J. Kim,C. S. Nelson,J. P. Hill,D. Gibbs,S-W. Cheong###
(862283, 862287)
 We report x<missing VAR>-ray scattering studies of nanoscale structural correlations inNd1-xSrx<missing VAR>MnO3 and La1-x<missing VAR>(Ca,Sr)x<missing VAR>MnO3, x<missing VAR>0.2--0.5.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

MnO3
###Common features of nanoscale structural correlations in magnetoresistive manganites with ferromagnetic low-temperature state|V. Kiryukhin,T. Y. Koo,A. Borissov,Y. J. Kim,C. S. Nelson,J. P. Hill,D. Gibbs,S-W. Cheong###
(862289, 862291)
 We report x<missing VAR>-ray scattering studies of nanoscale structural correlations inNd1-xSrx<missing VAR>MnO3 and La1-x<missing VAR>(Ca,Sr)x<missing VAR>MnO3, x<missing VAR>0.2--0.5.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ca
###Common features of nanoscale structural correlations in magnetoresistive manganites with ferromagnetic low-temperature state|V. Kiryukhin,T. Y. Koo,A. Borissov,Y. J. Kim,C. S. Nelson,J. P. Hill,D. Gibbs,S-W. Cheong###
(862300, 862300)
 We report x<missing VAR>-ray scattering studies of nanoscale structural correlations inNd1-xSrx<missing VAR>MnO3 and La1-x<missing VAR>(Ca,Sr)x<missing VAR>MnO3, x<missing VAR>0.2--0.5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr
###Common features of nanoscale structural correlations in magnetoresistive manganites with ferromagnetic low-temperature state|V. Kiryukhin,T. Y. Koo,A. Borissov,Y. J. Kim,C. S. Nelson,J. P. Hill,D. Gibbs,S-W. Cheong###
(862302, 862302)
 We report x<missing VAR>-ray scattering studies of nanoscale structural correlations inNd1-xSrx<missing VAR>MnO3 and La1-x<missing VAR>(Ca,Sr)x<missing VAR>MnO3, x<missing VAR>0.2--0.5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnO3
###Common features of nanoscale structural correlations in magnetoresistive manganites with ferromagnetic low-temperature state|V. Kiryukhin,T. Y. Koo,A. Borissov,Y. J. Kim,C. S. Nelson,J. P. Hill,D. Gibbs,S-W. Cheong###
(862305, 862307)
 We report x<missing VAR>-ray scattering studies of nanoscale structural correlations inNd1-xSrx<missing VAR>MnO3 and La1-x<missing VAR>(Ca,Sr)x<missing VAR>MnO3, x<missing VAR>0.2--0.5.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ca/Sr
###Common features of nanoscale structural correlations in magnetoresistive manganites with ferromagnetic low-temperature state|V. Kiryukhin,T. Y. Koo,A. Borissov,Y. J. Kim,C. S. Nelson,J. P. Hill,D. Gibbs,S-W. Cheong###
(862397, 862399)
 The period ofthe lattice modulation of the correlated regions is proportional to the Ca/Srdoping concentration x<missing VAR>.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Ce(Fe0.96Al0.04)2
###First order transition from ferromagnetism to antiferromagnetism in Ce(Fe$_{0.96}$Al$_{0.04}$)$_2$: a magnetotransport study|Kanwal Jeet Singh,Sujeet Chaudhary,M. K. Chattopadhyay,M. A. Manekar,S. B. Roy,P. Chaddah###
(862570, 862577)
First order transition from ferromagnetism to antiferromagnetism in Ce(Fe0.96Al0.04)2 a magnetotransport study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.02666666666666667,0,0,0,0,0,0,0,0,0,0,0,0,0.64,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ce(Fe0.96Al0.04)2
###First order transition from ferromagnetism to antiferromagnetism in Ce(Fe$_{0.96}$Al$_{0.04}$)$_2$: a magnetotransport study|Kanwal Jeet Singh,Sujeet Chaudhary,M. K. Chattopadhyay,M. A. Manekar,S. B. Roy,P. Chaddah###
(862630, 862637)
 The magnetotransport behaviour is investigated in detail across the firstorder magnetic phase transition from ferromagnetic to antiferromagnetic statein polycrystalline Ce(Fe0.96Al0.04)2 sample.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.02666666666666667,0,0,0,0,0,0,0,0,0,0,0,0,0.64,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Memory Effects in Electron Transport in Si Inversion Layers in the Dilute Regime: Individuality versus Universality|V. M. Pudalov,M. E. Gershenson,H. Kojima###
(862951, 862951)
Memory Effects in Electron Transport in Si Inversion Layers in the Dilute Regime Individuality versus Universality.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 4, 'K', 1],[203.0, 2, 'D', 3],[313.0, 0.1, 'h', 5],[316.0, 2, ',', 5]

In
###Memory Effects in Electron Transport in Si Inversion Layers in the Dilute Regime: Individuality versus Universality|V. M. Pudalov,M. E. Gershenson,H. Kojima###
(862972, 862972)
 In order to separate the universal and sample-specific effects in theconductivity of high-mobility Si inversion layers, we studied the electrontransport in the same device after cooling it down to 4K at different fixedvalues of the gate voltage Vcool.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 4, 'K', 0],[182.0, 2, 'D', 2],[292.0, 0.1, 'h', 4],[295.0, 2, ',', 4]

Si
###Memory Effects in Electron Transport in Si Inversion Layers in the Dilute Regime: Individuality versus Universality|V. M. Pudalov,M. E. Gershenson,H. Kojima###
(863005, 863005)
 In order to separate the universal and sample-specific effects in theconductivity of high-mobility Si inversion layers, we studied the electrontransport in the same device after cooling it down to 4K at different fixedvalues of the gate voltage Vcool.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 4, 'K', 0],[149.0, 2, 'D', 2],[259.0, 0.1, 'h', 4],[262.0, 2, ',', 4]

V
###Memory Effects in Electron Transport in Si Inversion Layers in the Dilute Regime: Individuality versus Universality|V. M. Pudalov,M. E. Gershenson,H. Kojima###
(863059, 863059)
 In order to separate the universal and sample-specific effects in theconductivity of high-mobility Si inversion layers, we studied the electrontransport in the same device after cooling it down to 4K at different fixedvalues of the gate voltage Vcool.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 4, 'K', 0],[95.0, 2, 'D', 2],[205.0, 0.1, 'h', 4],[208.0, 2, ',', 4]

V
###Memory Effects in Electron Transport in Si Inversion Layers in the Dilute Regime: Individuality versus Universality|V. M. Pudalov,M. E. Gershenson,H. Kojima###
(863065, 863065)
 Different Vcool did not modifysignificantly either the momentum relaxation rate or the strength ofelectron-electron interactions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 4, 'K', 1],[89.0, 2, 'D', 1],[199.0, 0.1, 'h', 3],[202.0, 2, ',', 3]

V
###Memory Effects in Electron Transport in Si Inversion Layers in the Dilute Regime: Individuality versus Universality|V. M. Pudalov,M. E. Gershenson,H. Kojima###
(863182, 863182)
 However, the temperature dependences of theresistance and the magnetoresistance in parallel magnetic fields, measured inthe vicinity of the metal-insulator transition in 2D, carry a strong imprint ofindividuality of the quenched disorder determined by Vcool.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 4, 'K', 2],[28.0, 2, 'D', 0],[82.0, 0.1, 'h', 2],[85.0, 2, ',', 2]

C
###DC transport properties and microwave absorption in bulk ceramic sample and film of La_{0.5}Sr_{0.5}CoO_{3-δ}: magnetic inhomogeneity effects|B. I. Belevtsev,N. T. Cherpak,I. N. Chukanova,A. I. Gubin,V. B. Krasovitsky,A. A. Lavrinovich###
(863295, 863295)
D<missing VAR>C transport properties and microwave absorption in bulk ceramic sample and film of La0.5Sr0.5CoO3- magnetic inhomogeneity effects.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 41, 'GHz', 1]

La0.5Sr0.5CoO3
###DC transport properties and microwave absorption in bulk ceramic sample and film of La_{0.5}Sr_{0.5}CoO_{3-δ}: magnetic inhomogeneity effects|B. I. Belevtsev,N. T. Cherpak,I. N. Chukanova,A. I. Gubin,V. B. Krasovitsky,A. A. Lavrinovich###
(863321, 863327)
D<missing VAR>C transport properties and microwave absorption in bulk ceramic sample and film of La0.5Sr0.5CoO3- magnetic inhomogeneity effects.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 41, 'GHz', 1]

C
###DC transport properties and microwave absorption in bulk ceramic sample and film of La_{0.5}Sr_{0.5}CoO_{3-δ}: magnetic inhomogeneity effects|B. I. Belevtsev,N. T. Cherpak,I. N. Chukanova,A. I. Gubin,V. B. Krasovitsky,A. A. Lavrinovich###
(863340, 863340)
 The D<missing VAR>C transport properties and microwave absorption (at 41 GHz) are measuredin a bulk ceramic sample and a film (220 nm thick) ofLa0.5Sr0.5CoO3-delta.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 41, 'GHz', 0]

La0.5Sr0.5CoO3
###DC transport properties and microwave absorption in bulk ceramic sample and film of La_{0.5}Sr_{0.5}CoO_{3-δ}: magnetic inhomogeneity effects|B. I. Belevtsev,N. T. Cherpak,I. N. Chukanova,A. I. Gubin,V. B. Krasovitsky,A. A. Lavrinovich###
(863389, 863395)
 The D<missing VAR>C transport properties and microwave absorption (at 41 GHz) are measuredin a bulk ceramic sample and a film (220 nm thick) ofLa0.5Sr0.5CoO3-delta.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 41, 'GHz', 0]

C
###DC transport properties and microwave absorption in bulk ceramic sample and film of La_{0.5}Sr_{0.5}CoO_{3-δ}: magnetic inhomogeneity effects|B. I. Belevtsev,N. T. Cherpak,I. N. Chukanova,A. I. Gubin,V. B. Krasovitsky,A. A. Lavrinovich###
(863490, 863490)
 The increase is far greater than that of found in the known D<missing VAR>Cmeasurements in doped cobaltates of the best crystal perfection.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 41, 'GHz', 3]

Nd0.5Sr0.5MnO3
###Microwave properties of Nd_0.5Sr_0.5MnO_3: a key role of the (x^2-y^2)-orbital effects|S. Zvyagin,A. Angerhofer,K. V. Kamenev,L. -C. Brunel,G. Balakrishnan,D. McK. Paul###
(863626, 863632)
Microwave properties of Nd0.5Sr0.5MnO3 a key role of the (x<missing VAR>2-y<missing VAR>2)-orbital effects.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nd0.5Sr0.5MnO3
###Microwave properties of Nd_0.5Sr_0.5MnO_3: a key role of the (x^2-y^2)-orbital effects|S. Zvyagin,A. Angerhofer,K. V. Kamenev,L. -C. Brunel,G. Balakrishnan,D. McK. Paul###
(863669, 863675)
 Transmittance of the colossal magnetoresistive compound Nd0.5Sr0.5MnO3showing metal-insulator phase transition has been studied by means of thesubmm- and mm-wavelength band spectroscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nd0.5Sr0.5MnO3
###Microwave properties of Nd_0.5Sr_0.5MnO_3: a key role of the (x^2-y^2)-orbital effects|S. Zvyagin,A. Angerhofer,K. V. Kamenev,L. -C. Brunel,G. Balakrishnan,D. McK. Paul###
(863902, 863908)
 This investigation confirmed a dominant role of the(x<missing VAR>2-y<missing VAR>2)-orbital degree of freedom in the low-energy optical properties ofNd0.5Sr0.5MnO3 and other doped manganites with planar (x<missing VAR>2-y<missing VAR>2)-orbitalorder, as predicted theoretically.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La1-xCa
###Ferromagnetism and electron-phonon coupling in the manganites|D. M. Edwards###
(864011, 864015)
 The physics of ferromagnetic doped manganites, such aschemLa1-xCax<missing VAR>MnO3 with x<missing VAR>approx0.2--0.4, is reviewed.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[12.0, -0.4, ',', 0]

MnO3
###Ferromagnetism and electron-phonon coupling in the manganites|D. M. Edwards###
(864017, 864019)
 The physics of ferromagnetic doped manganites, such aschemLa1-xCax<missing VAR>MnO3 with x<missing VAR>approx0.2--0.4, is reviewed.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, -0.4, ',', 0]

La0.325Pr0.300Ca0.375MnO3
###Non-volatile magnetoresistive memory in phase separated La$_{0.325}$Pr$_{0.300}$Ca$_{0.375}$MnO$_3$|P. Levy,F. Parisi,M. Quintero,L. Granja,J. Curiale,J. Sacanell,G. Leyva,G. Polla,R. S. Freitas,L. Ghivelder###
(864344, 864352)
Non-volatile magnetoresistive memory in phase separated La0.325Pr0.300Ca0.375MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.075,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.065,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 0.3, ',', 1],[50.0, 2, 'microns', 1],[195.0, 80, '%', 4]

La5
###Non-volatile magnetoresistive memory in phase separated La$_{0.325}$Pr$_{0.300}$Ca$_{0.375}$MnO$_3$|P. Levy,F. Parisi,M. Quintero,L. Granja,J. Curiale,J. Sacanell,G. Leyva,G. Polla,R. S. Freitas,L. Ghivelder###
(864376, 864377)
 We have measured magnetic and transport response on the polycrystallineLa5/8-yPryCa3/8MnO3 (y<missing VAR>0.30, average grain size 2 microns)compound.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 0.3, ',', 0],[25.0, 2, 'microns', 0],[170.0, 80, '%', 3]

Ca3
###Non-volatile magnetoresistive memory in phase separated La$_{0.325}$Pr$_{0.300}$Ca$_{0.375}$MnO$_3$|P. Levy,F. Parisi,M. Quintero,L. Granja,J. Curiale,J. Sacanell,G. Leyva,G. Polla,R. S. Freitas,L. Ghivelder###
(864384, 864385)
 We have measured magnetic and transport response on the polycrystallineLa5/8-yPryCa3/8MnO3 (y<missing VAR>0.30, average grain size 2 microns)compound.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 0.3, ',', 0],[17.0, 2, 'microns', 0],[162.0, 80, '%', 3]

MnO3
###Non-volatile magnetoresistive memory in phase separated La$_{0.325}$Pr$_{0.300}$Ca$_{0.375}$MnO$_3$|P. Levy,F. Parisi,M. Quintero,L. Granja,J. Curiale,J. Sacanell,G. Leyva,G. Polla,R. S. Freitas,L. Ghivelder###
(864388, 864390)
 We have measured magnetic and transport response on the polycrystallineLa5/8-yPryCa3/8MnO3 (y<missing VAR>0.30, average grain size 2 microns)compound.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 0.3, ',', 0],[12.0, 2, 'microns', 0],[157.0, 80, '%', 3]

In
###Non-volatile magnetoresistive memory in phase separated La$_{0.325}$Pr$_{0.300}$Ca$_{0.375}$MnO$_3$|P. Levy,F. Parisi,M. Quintero,L. Granja,J. Curiale,J. Sacanell,G. Leyva,G. Polla,R. S. Freitas,L. Ghivelder###
(864409, 864409)
 In the temperature range where ferromagnetic metallic and insulatingregions coexist we observed a persistent memory of low magnetic fields (< 1T) which is determined by the actual amount of the ferromagnetic phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 0.3, ',', 1],[7.0, 2, 'microns', 1],[138.0, 80, '%', 2]

Ga1-xMn
###Anisotropic Magnetoresistance in Ga$_{1-x}$Mn$_x$As|David V. Baxter,Dmitry Ruzmetov,Julia Scherschligt,Y. Sasaki,X. Liu,J. K. Furdyna,C. H. Mielke###
(864650, 864654)
Anisotropic Magnetoresistance in Ga1-xMnx<missing VAR>As.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[42.0, 0.053, 'for', 1],[154.0, 5, '%', 3],[162.0, 10, 'K', 3]

As
###Anisotropic Magnetoresistance in Ga$_{1-x}$Mn$_x$As|David V. Baxter,Dmitry Ruzmetov,Julia Scherschligt,Y. Sasaki,X. Liu,J. K. Furdyna,C. H. Mielke###
(864656, 864656)
Anisotropic Magnetoresistance in Ga1-xMnx<missing VAR>As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 0.053, 'for', 1],[152.0, 5, '%', 3],[160.0, 10, 'K', 3]

Ga1-xMn
###Anisotropic Magnetoresistance in Ga$_{1-x}$Mn$_x$As|David V. Baxter,Dmitry Ruzmetov,Julia Scherschligt,Y. Sasaki,X. Liu,J. K. Furdyna,C. H. Mielke###
(864677, 864681)
 We have measured the magnetoresistance in a series of Ga1-xMnx<missing VAR>Assamples with 0.033le x<missing VAR> le 0.053 for three mutually orthogonal orientationsof the applied magnetic field.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[15.0, 0.053, 'for', 0],[127.0, 5, '%', 2],[135.0, 10, 'K', 2]

As
###Anisotropic Magnetoresistance in Ga$_{1-x}$Mn$_x$As|David V. Baxter,Dmitry Ruzmetov,Julia Scherschligt,Y. Sasaki,X. Liu,J. K. Furdyna,C. H. Mielke###
(864683, 864683)
 We have measured the magnetoresistance in a series of Ga1-xMnx<missing VAR>Assamples with 0.033le x<missing VAR> le 0.053 for three mutually orthogonal orientationsof the applied magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 0.053, 'for', 0],[125.0, 5, '%', 2],[133.0, 10, 'K', 2]

S
###Anisotropic Magnetoresistance in Ga$_{1-x}$Mn$_x$As|David V. Baxter,Dmitry Ruzmetov,Julia Scherschligt,Y. Sasaki,X. Liu,J. K. Furdyna,C. H. Mielke###
(864727, 864727)
 The spontaneous resistivity anisotropy (SR<missing VAR>A) inthese materials is negative (i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 0.053, 'for', 1],[81.0, 5, '%', 1],[89.0, 10, 'K', 1]

S
###Anisotropic Magnetoresistance in Ga$_{1-x}$Mn$_x$As|David V. Baxter,Dmitry Ruzmetov,Julia Scherschligt,Y. Sasaki,X. Liu,J. K. Furdyna,C. H. Mielke###
(864853, 864853)
 This stands in contrast to the results for most conventional magneticmaterials where the SR<missing VAR>A is considerably smaller in magnitude for those fewcases in which a negative sign is observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 0.053, 'for', 3],[45.0, 5, '%', 1],[37.0, 10, 'K', 1]

S
###Anisotropic Magnetoresistance in Ga$_{1-x}$Mn$_x$As|David V. Baxter,Dmitry Ruzmetov,Julia Scherschligt,Y. Sasaki,X. Liu,J. K. Furdyna,C. H. Mielke###
(864899, 864899)
 The magnitude of the SR<missing VAR>A drops fromits maximum at low temperatures to zero at T<missing VAR>C in a manner that is consistentwith mean field theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[203.0, 0.053, 'for', 4],[91.0, 5, '%', 2],[83.0, 10, 'K', 2]

C
###Anisotropic Magnetoresistance in Ga$_{1-x}$Mn$_x$As|David V. Baxter,Dmitry Ruzmetov,Julia Scherschligt,Y. Sasaki,X. Liu,J. K. Furdyna,C. H. Mielke###
(864925, 864925)
 The magnitude of the SR<missing VAR>A drops fromits maximum at low temperatures to zero at T<missing VAR>C in a manner that is consistentwith mean field theory.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[229.0, 0.053, 'for', 4],[117.0, 5, '%', 2],[109.0, 10, 'K', 2]

Cu/Fe
###Impurity and band effects competition on the appearence of Inverse Giant Magnetoresistence in Cu/Fe multilayers with Cr|J. Milano,A. M. Llois,L. B. Steren###
(865021, 865023)
Impurity and band effects competition on the appearence of Inverse Giant Magnetoresistence in Cu/Fe multilayers with Cr.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Cr
###Impurity and band effects competition on the appearence of Inverse Giant Magnetoresistence in Cu/Fe multilayers with Cr|J. Milano,A. M. Llois,L. B. Steren###
(865029, 865029)
Impurity and band effects competition on the appearence of Inverse Giant Magnetoresistence in Cu/Fe multilayers with Cr.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Impurity and band effects competition on the appearence of Inverse Giant Magnetoresistence in Cu/Fe multilayers with Cr|J. Milano,A. M. Llois,L. B. Steren###
(865069, 865069)
 band effects in the appearanceof inverse giant magnetoresistance (IGMR) in Cu/Fe superlattices whit Cr.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu/Fe
###Impurity and band effects competition on the appearence of Inverse Giant Magnetoresistence in Cu/Fe multilayers with Cr|J. Milano,A. M. Llois,L. B. Steren###
(865077, 865079)
 band effects in the appearanceof inverse giant magnetoresistance (IGMR) in Cu/Fe superlattices whit Cr.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Cr
###Impurity and band effects competition on the appearence of Inverse Giant Magnetoresistence in Cu/Fe multilayers with Cr|J. Milano,A. M. Llois,L. B. Steren###
(865085, 865085)
 band effects in the appearanceof inverse giant magnetoresistance (IGMR) in Cu/Fe superlattices whit Cr.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(CIP)
###Impurity and band effects competition on the appearence of Inverse Giant Magnetoresistence in Cu/Fe multilayers with Cr|J. Milano,A. M. Llois,L. B. Steren###
(865095, 865099)
Current in plane (CIP) and current perpendicular to the plane (CPP) geometriesare considered.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(CPP)
###Impurity and band effects competition on the appearence of Inverse Giant Magnetoresistence in Cu/Fe multilayers with Cr|J. Milano,A. M. Llois,L. B. Steren###
(865113, 865117)
Current in plane (CIP) and current perpendicular to the plane (CPP) geometriesare considered.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr
###Impurity and band effects competition on the appearence of Inverse Giant Magnetoresistence in Cu/Fe multilayers with Cr|J. Milano,A. M. Llois,L. B. Steren###
(865165, 865165)
 Cr impurityeffects are taken into account through the spin dependent relaxation times andthe band effects through the semiclassical velocities obtained from the LDAcalculated electronic structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr/Fe
###Impurity and band effects competition on the appearence of Inverse Giant Magnetoresistence in Cu/Fe multilayers with Cr|J. Milano,A. M. Llois,L. B. Steren###
(865236, 865238)
  The larger the Cr/Fe hybridization strength, the bigger is the tendencytowards  IGMR.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

I
###Impurity and band effects competition on the appearence of Inverse Giant Magnetoresistence in Cu/Fe multilayers with Cr|J. Milano,A. M. Llois,L. B. Steren###
(865261, 865261)
  The larger the Cr/Fe hybridization strength, the bigger is the tendencytowards  IGMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Impurity and band effects competition on the appearence of Inverse Giant Magnetoresistence in Cu/Fe multilayers with Cr|J. Milano,A. M. Llois,L. B. Steren###
(865267, 865267)
 In particular, in CIP geometry roughness at these interfaces increasesthe IGMR range.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CIP
###Impurity and band effects competition on the appearence of Inverse Giant Magnetoresistence in Cu/Fe multilayers with Cr|J. Milano,A. M. Llois,L. B. Steren###
(865274, 865276)
 In particular, in CIP geometry roughness at these interfaces increasesthe IGMR range.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Impurity and band effects competition on the appearence of Inverse Giant Magnetoresistence in Cu/Fe multilayers with Cr|J. Milano,A. M. Llois,L. B. Steren###
(865293, 865293)
 In particular, in CIP geometry roughness at these interfaces increasesthe IGMR range.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr
###Impurity and band effects competition on the appearence of Inverse Giant Magnetoresistence in Cu/Fe multilayers with Cr|J. Milano,A. M. Llois,L. B. Steren###
(865345, 865345)
  The results are compared with experiments and we conclude that theexperimental GMR curves can only be explained if Cr bands are present.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Ballistic Spin Injection and Detection in Fe/Semiconductor/Fe Junctions|Phivos Mavropoulos,Olaf Wunnicke,Peter H. Dederichs###
(865374, 865374)
Ballistic Spin Injection and Detection in Fe/Semiconductor/Fe Junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[220.0, 100, '%', 3]

Fe
###Ballistic Spin Injection and Detection in Fe/Semiconductor/Fe Junctions|Phivos Mavropoulos,Olaf Wunnicke,Peter H. Dederichs###
(865378, 865378)
Ballistic Spin Injection and Detection in Fe/Semiconductor/Fe Junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[216.0, 100, '%', 3]

Fe/GaAs/Fe
###Ballistic Spin Injection and Detection in Fe/Semiconductor/Fe Junctions|Phivos Mavropoulos,Olaf Wunnicke,Peter H. Dederichs###
(865410, 865415)
 We present it ab initio calculations of the spin-dependent electronictransport in Fe/GaAs/Fe and Fe/ZnSe/Fe (001) junctions simulating the situationof a spin-injection experiment.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[179.0, 100, '%', 2]

Fe/ZnSe/Fe
###Ballistic Spin Injection and Detection in Fe/Semiconductor/Fe Junctions|Phivos Mavropoulos,Olaf Wunnicke,Peter H. Dederichs###
(865419, 865424)
 We present it ab initio calculations of the spin-dependent electronictransport in Fe/GaAs/Fe and Fe/ZnSe/Fe (001) junctions simulating the situationof a spin-injection experiment.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[170.0, 100, '%', 2]

B
###Ballistic Spin Injection and Detection in Fe/Semiconductor/Fe Junctions|Phivos Mavropoulos,Olaf Wunnicke,Peter H. Dederichs###
(865460, 865460)
 We follow a ballistic Landauer-Buttikerapproach for the calculation of the spin-dependent dc conductance in thelinear-responce regime, in the limit of zero temperature.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 100, '%', 1]

In
###Ballistic Spin Injection and Detection in Fe/Semiconductor/Fe Junctions|Phivos Mavropoulos,Olaf Wunnicke,Peter H. Dederichs###
(865610, 865610)
 In particular we study the significance of thetransmission resonances caused by the presence of two interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 100, '%', 1]

B
###Anisotropic transport in unidirectional lateral superlattice around half-filling of the second Landau level|A. Endo,Y. Iye###
(865796, 865796)
 By altering the ratio a/l<missing VAR>(with l<missing VAR>sqrthbar/e<missing VAR>Bperp the magnetic length) via changing the electrondensity ne, it is shown that the nu5/2 anisotropic features appear in therange 6.6 alt a/l<missing VAR> alt 7.2 varying their intensities, becoming most conspicuousat a/l<missing VAR> simeq 6.7.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 6.6, 'alt', 0],[59.0, 7.2, 'varying', 0],[110.0, 250, 'mK', 1]

B
###Anisotropic transport in unidirectional lateral superlattice around half-filling of the second Landau level|A. Endo,Y. Iye###
(865940, 865940)
 Tilt experiments reveal that the structures areslightly enhanced by an in-plane magnetic field B perpendicular to thegrating but are almost completely destroyed by B parallel to the grating.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 6.6, 'alt', 2],[85.0, 7.2, 'varying', 2],[34.0, 250, 'mK', 1]

B
###Anisotropic transport in unidirectional lateral superlattice around half-filling of the second Landau level|A. Endo,Y. Iye###
(865963, 865963)
 Tilt experiments reveal that the structures areslightly enhanced by an in-plane magnetic field B perpendicular to thegrating but are almost completely destroyed by B parallel to the grating.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 6.6, 'alt', 2],[108.0, 7.2, 'varying', 2],[57.0, 250, 'mK', 1]

La1
###Epitaxial Growth of La$_{1/3}$Sr$_{2/3}$FeO$_3$ thin films by laser ablation|W. Prellier,B. Mercey###
(866040, 866041)
Epitaxial Growth of La1/3Sr2/3FeO3 thin films by laser ablation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[236.0, 180, 'K', 4],[313.0, 270, 'K', 4],[325.0, 4, 'T', 4]

Sr2
###Epitaxial Growth of La$_{1/3}$Sr$_{2/3}$FeO$_3$ thin films by laser ablation|W. Prellier,B. Mercey###
(866044, 866045)
Epitaxial Growth of La1/3Sr2/3FeO3 thin films by laser ablation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[232.0, 180, 'K', 4],[309.0, 270, 'K', 4],[321.0, 4, 'T', 4]

FeO3
###Epitaxial Growth of La$_{1/3}$Sr$_{2/3}$FeO$_3$ thin films by laser ablation|W. Prellier,B. Mercey###
(866048, 866050)
Epitaxial Growth of La1/3Sr2/3FeO3 thin films by laser ablation.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[227.0, 180, 'K', 4],[304.0, 270, 'K', 4],[316.0, 4, 'T', 4]

La1
###Epitaxial Growth of La$_{1/3}$Sr$_{2/3}$FeO$_3$ thin films by laser ablation|W. Prellier,B. Mercey###
(866079, 866080)
 We report on the synthesis of high quality La1/3Sr2/3FeO3 (L<missing VAR>SFO)thin films using the pulsed laser deposition technique on both SrTiO3 (ST<missing VAR>O)and LaAlO3 (L<missing VAR>AO) substrates (100)-oriented.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[197.0, 180, 'K', 3],[274.0, 270, 'K', 3],[286.0, 4, 'T', 3]

Sr2
###Epitaxial Growth of La$_{1/3}$Sr$_{2/3}$FeO$_3$ thin films by laser ablation|W. Prellier,B. Mercey###
(866083, 866084)
 We report on the synthesis of high quality La1/3Sr2/3FeO3 (L<missing VAR>SFO)thin films using the pulsed laser deposition technique on both SrTiO3 (ST<missing VAR>O)and LaAlO3 (L<missing VAR>AO) substrates (100)-oriented.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[193.0, 180, 'K', 3],[270.0, 270, 'K', 3],[282.0, 4, 'T', 3]

FeO3
###Epitaxial Growth of La$_{1/3}$Sr$_{2/3}$FeO$_3$ thin films by laser ablation|W. Prellier,B. Mercey###
(866087, 866089)
 We report on the synthesis of high quality La1/3Sr2/3FeO3 (L<missing VAR>SFO)thin films using the pulsed laser deposition technique on both SrTiO3 (ST<missing VAR>O)and LaAlO3 (L<missing VAR>AO) substrates (100)-oriented.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 180, 'K', 3],[265.0, 270, 'K', 3],[277.0, 4, 'T', 3]

O
###Epitaxial Growth of La$_{1/3}$Sr$_{2/3}$FeO$_3$ thin films by laser ablation|W. Prellier,B. Mercey###
(866095, 866095)
 We report on the synthesis of high quality La1/3Sr2/3FeO3 (L<missing VAR>SFO)thin films using the pulsed laser deposition technique on both SrTiO3 (ST<missing VAR>O)and LaAlO3 (L<missing VAR>AO) substrates (100)-oriented.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[182.0, 180, 'K', 3],[259.0, 270, 'K', 3],[271.0, 4, 'T', 3]

SrTiO3
###Epitaxial Growth of La$_{1/3}$Sr$_{2/3}$FeO$_3$ thin films by laser ablation|W. Prellier,B. Mercey###
(866119, 866122)
 We report on the synthesis of high quality La1/3Sr2/3FeO3 (L<missing VAR>SFO)thin films using the pulsed laser deposition technique on both SrTiO3 (ST<missing VAR>O)and LaAlO3 (L<missing VAR>AO) substrates (100)-oriented.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 180, 'K', 3],[232.0, 270, 'K', 3],[244.0, 4, 'T', 3]

S
###Epitaxial Growth of La$_{1/3}$Sr$_{2/3}$FeO$_3$ thin films by laser ablation|W. Prellier,B. Mercey###
(866125, 866125)
 We report on the synthesis of high quality La1/3Sr2/3FeO3 (L<missing VAR>SFO)thin films using the pulsed laser deposition technique on both SrTiO3 (ST<missing VAR>O)and LaAlO3 (L<missing VAR>AO) substrates (100)-oriented.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 180, 'K', 3],[229.0, 270, 'K', 3],[241.0, 4, 'T', 3]

O
###Epitaxial Growth of La$_{1/3}$Sr$_{2/3}$FeO$_3$ thin films by laser ablation|W. Prellier,B. Mercey###
(866127, 866127)
 We report on the synthesis of high quality La1/3Sr2/3FeO3 (L<missing VAR>SFO)thin films using the pulsed laser deposition technique on both SrTiO3 (ST<missing VAR>O)and LaAlO3 (L<missing VAR>AO) substrates (100)-oriented.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 180, 'K', 3],[227.0, 270, 'K', 3],[239.0, 4, 'T', 3]

LaAlO3
###Epitaxial Growth of La$_{1/3}$Sr$_{2/3}$FeO$_3$ thin films by laser ablation|W. Prellier,B. Mercey###
(866133, 866136)
 We report on the synthesis of high quality La1/3Sr2/3FeO3 (L<missing VAR>SFO)thin films using the pulsed laser deposition technique on both SrTiO3 (ST<missing VAR>O)and LaAlO3 (L<missing VAR>AO) substrates (100)-oriented.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 180, 'K', 3],[218.0, 270, 'K', 3],[230.0, 4, 'T', 3]

O
###Epitaxial Growth of La$_{1/3}$Sr$_{2/3}$FeO$_3$ thin films by laser ablation|W. Prellier,B. Mercey###
(866141, 866141)
 We report on the synthesis of high quality La1/3Sr2/3FeO3 (L<missing VAR>SFO)thin films using the pulsed laser deposition technique on both SrTiO3 (ST<missing VAR>O)and LaAlO3 (L<missing VAR>AO) substrates (100)-oriented.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 180, 'K', 3],[213.0, 270, 'K', 3],[225.0, 4, 'T', 3]

SFO
###Epitaxial Growth of La$_{1/3}$Sr$_{2/3}$FeO$_3$ thin films by laser ablation|W. Prellier,B. Mercey###
(866245, 866247)
The transport properties reveal that, while L<missing VAR>SFO films deposited on ST<missing VAR>O exhibitan anomaly in the resistivity vs temperature at 180K (corresponding to thecharge-ordered transition and associated with a transition from a paramagneticto an antiferromagnetic state), the films grown on L<missing VAR>AO display a very smallmagnetoresistance behavior and present an hysteresis around 270K under theapplication of a 4T magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 180, 'K', 0],[107.0, 270, 'K', 0],[119.0, 4, 'T', 0]

S
###Epitaxial Growth of La$_{1/3}$Sr$_{2/3}$FeO$_3$ thin films by laser ablation|W. Prellier,B. Mercey###
(866255, 866255)
The transport properties reveal that, while L<missing VAR>SFO films deposited on ST<missing VAR>O exhibitan anomaly in the resistivity vs temperature at 180K (corresponding to thecharge-ordered transition and associated with a transition from a paramagneticto an antiferromagnetic state), the films grown on L<missing VAR>AO display a very smallmagnetoresistance behavior and present an hysteresis around 270K under theapplication of a 4T magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 180, 'K', 0],[99.0, 270, 'K', 0],[111.0, 4, 'T', 0]

O
###Epitaxial Growth of La$_{1/3}$Sr$_{2/3}$FeO$_3$ thin films by laser ablation|W. Prellier,B. Mercey###
(866257, 866257)
The transport properties reveal that, while L<missing VAR>SFO films deposited on ST<missing VAR>O exhibitan anomaly in the resistivity vs temperature at 180K (corresponding to thecharge-ordered transition and associated with a transition from a paramagneticto an antiferromagnetic state), the films grown on L<missing VAR>AO display a very smallmagnetoresistance behavior and present an hysteresis around 270K under theapplication of a 4T magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 180, 'K', 0],[97.0, 270, 'K', 0],[109.0, 4, 'T', 0]

O
###Epitaxial Growth of La$_{1/3}$Sr$_{2/3}$FeO$_3$ thin films by laser ablation|W. Prellier,B. Mercey###
(866330, 866330)
The transport properties reveal that, while L<missing VAR>SFO films deposited on ST<missing VAR>O exhibitan anomaly in the resistivity vs temperature at 180K (corresponding to thecharge-ordered transition and associated with a transition from a paramagneticto an antiferromagnetic state), the films grown on L<missing VAR>AO display a very smallmagnetoresistance behavior and present an hysteresis around 270K under theapplication of a 4T magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 180, 'K', 0],[24.0, 270, 'K', 0],[36.0, 4, 'T', 0]

In
###Interplay of charge, spin, orbital and lattice correlations in colossal magnetoresistance manganites|Alexander Weisse,Holger Fehske###
(866998, 866998)
 In addition, our calculationgives detailed insights into orbital correlations and demonstrates thepossibility of complex orbital states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Role of the dimerized gap due to anion ordering in spin-density wave phase of (TMTSF)$_2$ClO$_4$ at high magnetic fields|N. Matsunaga,A. Ayari,P. Monceau,A. Ishikawa,K. Nomura,M. Watanabe,J. Yamada,S. Nakatsuji###
(867081, 867081)
Role of the dimerized gap due to anion ordering in spin-density wave phase of (TMTSF)2ClO4 at high magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 27, 'T', 2]

ClO4
###Role of the dimerized gap due to anion ordering in spin-density wave phase of (TMTSF)$_2$ClO$_4$ at high magnetic fields|N. Matsunaga,A. Ayari,P. Monceau,A. Ishikawa,K. Nomura,M. Watanabe,J. Yamada,S. Nakatsuji###
(867084, 867086)
Role of the dimerized gap due to anion ordering in spin-density wave phase of (TMTSF)2ClO4 at high magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 27, 'T', 2]

FIS
###Role of the dimerized gap due to anion ordering in spin-density wave phase of (TMTSF)$_2$ClO$_4$ at high magnetic fields|N. Matsunaga,A. Ayari,P. Monceau,A. Ishikawa,K. Nomura,M. Watanabe,J. Yamada,S. Nakatsuji###
(867126, 867128)
 Magnetoresistance measurements have been carried out along the highlyconducting a axis in the FISD<missing VAR>W phase of hydrogened and deuterated(TMTSF)2ClO4 for various cooling rates through the anion orderingtemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 27, 'T', 1]

W
###Role of the dimerized gap due to anion ordering in spin-density wave phase of (TMTSF)$_2$ClO$_4$ at high magnetic fields|N. Matsunaga,A. Ayari,P. Monceau,A. Ishikawa,K. Nomura,M. Watanabe,J. Yamada,S. Nakatsuji###
(867130, 867130)
 Magnetoresistance measurements have been carried out along the highlyconducting a axis in the FISD<missing VAR>W phase of hydrogened and deuterated(TMTSF)2ClO4 for various cooling rates through the anion orderingtemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 27, 'T', 1]

F
###Role of the dimerized gap due to anion ordering in spin-density wave phase of (TMTSF)$_2$ClO$_4$ at high magnetic fields|N. Matsunaga,A. Ayari,P. Monceau,A. Ishikawa,K. Nomura,M. Watanabe,J. Yamada,S. Nakatsuji###
(867148, 867148)
 Magnetoresistance measurements have been carried out along the highlyconducting a axis in the FISD<missing VAR>W phase of hydrogened and deuterated(TMTSF)2ClO4 for various cooling rates through the anion orderingtemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 27, 'T', 1]

ClO4
###Role of the dimerized gap due to anion ordering in spin-density wave phase of (TMTSF)$_2$ClO$_4$ at high magnetic fields|N. Matsunaga,A. Ayari,P. Monceau,A. Ishikawa,K. Nomura,M. Watanabe,J. Yamada,S. Nakatsuji###
(867151, 867153)
 Magnetoresistance measurements have been carried out along the highlyconducting a axis in the FISD<missing VAR>W phase of hydrogened and deuterated(TMTSF)2ClO4 for various cooling rates through the anion orderingtemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 27, 'T', 1]

HI
###Role of the dimerized gap due to anion ordering in spin-density wave phase of (TMTSF)$_2$ClO$_4$ at high magnetic fields|N. Matsunaga,A. Ayari,P. Monceau,A. Ishikawa,K. Nomura,M. Watanabe,J. Yamada,S. Nakatsuji###
(867203, 867204)
 With increasing the cooling rate, a) the high field phase boundarybetarm HI, observed at 27 T in hydrogened samples for slowly cooled,is shifted towards a lower field, b) the last semimetallic SD<missing VAR>W phase belowbetarm HI is suppressed, and c) the FISD<missing VAR>W insulating phase abovebetarm HI is enhanced in both salts.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 27, 'T', 0]

S
###Role of the dimerized gap due to anion ordering in spin-density wave phase of (TMTSF)$_2$ClO$_4$ at high magnetic fields|N. Matsunaga,A. Ayari,P. Monceau,A. Ishikawa,K. Nomura,M. Watanabe,J. Yamada,S. Nakatsuji###
(867248, 867248)
 With increasing the cooling rate, a) the high field phase boundarybetarm HI, observed at 27 T in hydrogened samples for slowly cooled,is shifted towards a lower field, b) the last semimetallic SD<missing VAR>W phase belowbetarm HI is suppressed, and c) the FISD<missing VAR>W insulating phase abovebetarm HI is enhanced in both salts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 27, 'T', 0]

W
###Role of the dimerized gap due to anion ordering in spin-density wave phase of (TMTSF)$_2$ClO$_4$ at high magnetic fields|N. Matsunaga,A. Ayari,P. Monceau,A. Ishikawa,K. Nomura,M. Watanabe,J. Yamada,S. Nakatsuji###
(867250, 867250)
 With increasing the cooling rate, a) the high field phase boundarybetarm HI, observed at 27 T in hydrogened samples for slowly cooled,is shifted towards a lower field, b) the last semimetallic SD<missing VAR>W phase belowbetarm HI is suppressed, and c) the FISD<missing VAR>W insulating phase abovebetarm HI is enhanced in both salts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 27, 'T', 0]

HI
###Role of the dimerized gap due to anion ordering in spin-density wave phase of (TMTSF)$_2$ClO$_4$ at high magnetic fields|N. Matsunaga,A. Ayari,P. Monceau,A. Ishikawa,K. Nomura,M. Watanabe,J. Yamada,S. Nakatsuji###
(867260, 867261)
 With increasing the cooling rate, a) the high field phase boundarybetarm HI, observed at 27 T in hydrogened samples for slowly cooled,is shifted towards a lower field, b) the last semimetallic SD<missing VAR>W phase belowbetarm HI is suppressed, and c) the FISD<missing VAR>W insulating phase abovebetarm HI is enhanced in both salts.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 27, 'T', 0]

FIS
###Role of the dimerized gap due to anion ordering in spin-density wave phase of (TMTSF)$_2$ClO$_4$ at high magnetic fields|N. Matsunaga,A. Ayari,P. Monceau,A. Ishikawa,K. Nomura,M. Watanabe,J. Yamada,S. Nakatsuji###
(867275, 867277)
 With increasing the cooling rate, a) the high field phase boundarybetarm HI, observed at 27 T in hydrogened samples for slowly cooled,is shifted towards a lower field, b) the last semimetallic SD<missing VAR>W phase belowbetarm HI is suppressed, and c) the FISD<missing VAR>W insulating phase abovebetarm HI is enhanced in both salts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 27, 'T', 0]

W
###Role of the dimerized gap due to anion ordering in spin-density wave phase of (TMTSF)$_2$ClO$_4$ at high magnetic fields|N. Matsunaga,A. Ayari,P. Monceau,A. Ishikawa,K. Nomura,M. Watanabe,J. Yamada,S. Nakatsuji###
(867279, 867279)
 With increasing the cooling rate, a) the high field phase boundarybetarm HI, observed at 27 T in hydrogened samples for slowly cooled,is shifted towards a lower field, b) the last semimetallic SD<missing VAR>W phase belowbetarm HI is suppressed, and c) the FISD<missing VAR>W insulating phase abovebetarm HI is enhanced in both salts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 27, 'T', 0]

HI
###Role of the dimerized gap due to anion ordering in spin-density wave phase of (TMTSF)$_2$ClO$_4$ at high magnetic fields|N. Matsunaga,A. Ayari,P. Monceau,A. Ishikawa,K. Nomura,M. Watanabe,J. Yamada,S. Nakatsuji###
(867291, 867292)
 With increasing the cooling rate, a) the high field phase boundarybetarm HI, observed at 27 T in hydrogened samples for slowly cooled,is shifted towards a lower field, b) the last semimetallic SD<missing VAR>W phase belowbetarm HI is suppressed, and c) the FISD<missing VAR>W insulating phase abovebetarm HI is enhanced in both salts.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 27, 'T', 0]

FIS
###Role of the dimerized gap due to anion ordering in spin-density wave phase of (TMTSF)$_2$ClO$_4$ at high magnetic fields|N. Matsunaga,A. Ayari,P. Monceau,A. Ishikawa,K. Nomura,M. Watanabe,J. Yamada,S. Nakatsuji###
(867318, 867320)
 The cooling rate dependence ofthe FISD<missing VAR>W transition and of betarm HI in both salts can be explainedby taking into account the peculiar SD<missing VAR>W nesting vector stabilized by thedimerized gap due to anion ordering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 27, 'T', 1]

W
###Role of the dimerized gap due to anion ordering in spin-density wave phase of (TMTSF)$_2$ClO$_4$ at high magnetic fields|N. Matsunaga,A. Ayari,P. Monceau,A. Ishikawa,K. Nomura,M. Watanabe,J. Yamada,S. Nakatsuji###
(867322, 867322)
 The cooling rate dependence ofthe FISD<missing VAR>W transition and of betarm HI in both salts can be explainedby taking into account the peculiar SD<missing VAR>W nesting vector stabilized by thedimerized gap due to anion ordering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 27, 'T', 1]

HI
###Role of the dimerized gap due to anion ordering in spin-density wave phase of (TMTSF)$_2$ClO$_4$ at high magnetic fields|N. Matsunaga,A. Ayari,P. Monceau,A. Ishikawa,K. Nomura,M. Watanabe,J. Yamada,S. Nakatsuji###
(867333, 867334)
 The cooling rate dependence ofthe FISD<missing VAR>W transition and of betarm HI in both salts can be explainedby taking into account the peculiar SD<missing VAR>W nesting vector stabilized by thedimerized gap due to anion ordering.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 27, 'T', 1]

S
###Role of the dimerized gap due to anion ordering in spin-density wave phase of (TMTSF)$_2$ClO$_4$ at high magnetic fields|N. Matsunaga,A. Ayari,P. Monceau,A. Ishikawa,K. Nomura,M. Watanabe,J. Yamada,S. Nakatsuji###
(867361, 867361)
 The cooling rate dependence ofthe FISD<missing VAR>W transition and of betarm HI in both salts can be explainedby taking into account the peculiar SD<missing VAR>W nesting vector stabilized by thedimerized gap due to anion ordering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 27, 'T', 1]

W
###Role of the dimerized gap due to anion ordering in spin-density wave phase of (TMTSF)$_2$ClO$_4$ at high magnetic fields|N. Matsunaga,A. Ayari,P. Monceau,A. Ishikawa,K. Nomura,M. Watanabe,J. Yamada,S. Nakatsuji###
(867363, 867363)
 The cooling rate dependence ofthe FISD<missing VAR>W transition and of betarm HI in both salts can be explainedby taking into account the peculiar SD<missing VAR>W nesting vector stabilized by thedimerized gap due to anion ordering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 27, 'T', 1]

Mn3
###Orbital effects in manganites|Jeroen van den Brink,Giniyat Khaliullin,Daniel Khomskii###
(867434, 867435)
The Mn3 ions in these compounds have double orbital degeneracy and arestrong Jahn-Teller ions, causing structural distortions and orbital ordering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CeRu2Si2
###The effect of uniaxial pressure on the magnetic anomalies of the heavy-fermion metamagnet CeRu2Si2|S. R. Saha,H. Sugawara,T. Namiki,Y. Aoki,H. Sato###
(867691, 867695)
The effect of uniaxial pressure on the magnetic anomalies of the heavy-fermion metamagnet CeRu2Si2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 2, 'K', 3]

P
###The effect of uniaxial pressure on the magnetic anomalies of the heavy-fermion metamagnet CeRu2Si2|S. R. Saha,H. Sugawara,T. Namiki,Y. Aoki,H. Sato###
(867709, 867709)
 The effect of uniaxial pressure (Pu) on the magnetic susceptibility (X),magnetization (M), and magnetoresistance (MR) of the heavy-fermion metamagnetCeRu2Si2 has been investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 2, 'K', 2]

CeRu2Si2
###The effect of uniaxial pressure on the magnetic anomalies of the heavy-fermion metamagnet CeRu2Si2|S. R. Saha,H. Sugawara,T. Namiki,Y. Aoki,H. Sato###
(867754, 867758)
 The effect of uniaxial pressure (Pu) on the magnetic susceptibility (X),magnetization (M), and magnetoresistance (MR) of the heavy-fermion metamagnetCeRu2Si2 has been investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 2, 'K', 2]

H
###The effect of uniaxial pressure on the magnetic anomalies of the heavy-fermion metamagnet CeRu2Si2|S. R. Saha,H. Sugawara,T. Namiki,Y. Aoki,H. Sato###
(867868, 867868)
, thetemperature of the susceptibility maximum (T<missing VAR>max), the pagamagnetic Weisstemperature (Qp), 1/X<missing VAR> at 2 K, and the magnetic field of the metamagneticanomaly (HM), scale approximately linearly with Pu<missing VAR>, indicating that all thequantities are related to the same energy scale, probably of the Kondotemperature.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 2, 'K', 0]

P
###The effect of uniaxial pressure on the magnetic anomalies of the heavy-fermion metamagnet CeRu2Si2|S. R. Saha,H. Sugawara,T. Namiki,Y. Aoki,H. Sato###
(867881, 867881)
, thetemperature of the susceptibility maximum (T<missing VAR>max), the pagamagnetic Weisstemperature (Qp), 1/X<missing VAR> at 2 K, and the magnetic field of the metamagneticanomaly (HM), scale approximately linearly with Pu<missing VAR>, indicating that all thequantities are related to the same energy scale, probably of the Kondotemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 2, 'K', 0]

P
###The effect of uniaxial pressure on the magnetic anomalies of the heavy-fermion metamagnet CeRu2Si2|S. R. Saha,H. Sugawara,T. Namiki,Y. Aoki,H. Sato###
(867939, 867939)
 The increase (decrease) of the quantities for Pu<missing VAR>  c<missing VAR> axis (Pu<missing VAR> a axis) can be attributed to a decrease (increase) in the nearest Ce-Rudistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 2, 'K', 1]

P
###The effect of uniaxial pressure on the magnetic anomalies of the heavy-fermion metamagnet CeRu2Si2|S. R. Saha,H. Sugawara,T. Namiki,Y. Aoki,H. Sato###
(867948, 867948)
 The increase (decrease) of the quantities for Pu<missing VAR>  c<missing VAR> axis (Pu<missing VAR> a axis) can be attributed to a decrease (increase) in the nearest Ce-Rudistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 2, 'K', 1]

Ce
###The effect of uniaxial pressure on the magnetic anomalies of the heavy-fermion metamagnet CeRu2Si2|S. R. Saha,H. Sugawara,T. Namiki,Y. Aoki,H. Sato###
(867980, 867980)
 The increase (decrease) of the quantities for Pu<missing VAR>  c<missing VAR> axis (Pu<missing VAR> a axis) can be attributed to a decrease (increase) in the nearest Ce-Rudistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 2, 'K', 1]

Ru
###The effect of uniaxial pressure on the magnetic anomalies of the heavy-fermion metamagnet CeRu2Si2|S. R. Saha,H. Sugawara,T. Namiki,Y. Aoki,H. Sato###
(867982, 867982)
 The increase (decrease) of the quantities for Pu<missing VAR>  c<missing VAR> axis (Pu<missing VAR> a axis) can be attributed to a decrease (increase) in the nearest Ce-Rudistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 2, 'K', 1]

P
###The effect of uniaxial pressure on the magnetic anomalies of the heavy-fermion metamagnet CeRu2Si2|S. R. Saha,H. Sugawara,T. Namiki,Y. Aoki,H. Sato###
(868070, 868070)
  PACS numbers 75.20.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[223.0, 2, 'K', 3]

CS
###The effect of uniaxial pressure on the magnetic anomalies of the heavy-fermion metamagnet CeRu2Si2|S. R. Saha,H. Sugawara,T. Namiki,Y. Aoki,H. Sato###
(868072, 868073)
  PACS numbers 75.20.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[225.0, 2, 'K', 3]

CoO/Co/Cu/NiFe
###Switching the magnetic configuration of a spin valve by current induced domain wall motion|J. Grollier,D. Lacour,V. Cros,A. Hamzic,A. Vaures,A. Fert,D. Adam,G. Faini###
(868188, 868196)
 The samples are 1 micron wide longstripes of a CoO/Co/Cu/NiFe classical spin valve structure.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[13.0, 1, 'micron', 0]

Mg
###Effects of unreacted Mg impurities on the transport properties of MgB2|C. U. Jung,Heon-Jung Kim,Min-Seok Park,Mun-Seog Kim,J. Y. Kim,Zhonglian Du,Sung-Ik Lee,K. H. Kim,J. B. Betts,M. Jaime,A. H. Lacerda,G. S. Boebinger###
(868490, 868490)
Effects of unreacted Mg impurities on the transport properties of MgB2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 11, 'B', 1],[141.0, 5.8, ',', 4],[158.0, 40, 'K', 4],[163.0, 12, '%', 4],[284.0, 50, 'K', 7],[287.0, 10, 'T', 7]

MgB2
###Effects of unreacted Mg impurities on the transport properties of MgB2|C. U. Jung,Heon-Jung Kim,Min-Seok Park,Mun-Seog Kim,J. Y. Kim,Zhonglian Du,Sung-Ik Lee,K. H. Kim,J. B. Betts,M. Jaime,A. H. Lacerda,G. S. Boebinger###
(868504, 868506)
Effects of unreacted Mg impurities on the transport properties of MgB2.
Featurization terminated normally.
0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 11, 'B', 1],[125.0, 5.8, ',', 4],[142.0, 40, 'K', 4],[147.0, 12, '%', 4],[268.0, 50, 'K', 7],[271.0, 10, 'T', 7]

MgB2
###Effects of unreacted Mg impurities on the transport properties of MgB2|C. U. Jung,Heon-Jung Kim,Min-Seok Park,Mun-Seog Kim,J. Y. Kim,Zhonglian Du,Sung-Ik Lee,K. H. Kim,J. B. Betts,M. Jaime,A. H. Lacerda,G. S. Boebinger###
(868515, 868517)
 We synthesized polycrystalline MgB2 from a stoichiometric mixture of Mg andthe 11 B isotope under different conditions.
Featurization terminated normally.
0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 11, 'B', 0],[114.0, 5.8, ',', 3],[131.0, 40, 'K', 3],[136.0, 12, '%', 3],[257.0, 50, 'K', 6],[260.0, 10, 'T', 6]

Mg
###Effects of unreacted Mg impurities on the transport properties of MgB2|C. U. Jung,Heon-Jung Kim,Min-Seok Park,Mun-Seog Kim,J. Y. Kim,Zhonglian Du,Sung-Ik Lee,K. H. Kim,J. B. Betts,M. Jaime,A. H. Lacerda,G. S. Boebinger###
(868529, 868529)
 We synthesized polycrystalline MgB2 from a stoichiometric mixture of Mg andthe 11 B isotope under different conditions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 11, 'B', 0],[102.0, 5.8, ',', 3],[119.0, 40, 'K', 3],[124.0, 12, '%', 3],[245.0, 50, 'K', 6],[248.0, 10, 'T', 6]

Tc
###Effects of unreacted Mg impurities on the transport properties of MgB2|C. U. Jung,Heon-Jung Kim,Min-Seok Park,Mun-Seog Kim,J. Y. Kim,Zhonglian Du,Sung-Ik Lee,K. H. Kim,J. B. Betts,M. Jaime,A. H. Lacerda,G. S. Boebinger###
(868561, 868561)
 All the samples showed bulksuperconductivity with Tc  3839 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 11, 'B', 1],[70.0, 5.8, ',', 2],[87.0, 40, 'K', 2],[92.0, 12, '%', 2],[213.0, 50, 'K', 5],[216.0, 10, 'T', 5]

K
###Effects of unreacted Mg impurities on the transport properties of MgB2|C. U. Jung,Heon-Jung Kim,Min-Seok Park,Mun-Seog Kim,J. Y. Kim,Zhonglian Du,Sung-Ik Lee,K. H. Kim,J. B. Betts,M. Jaime,A. H. Lacerda,G. S. Boebinger###
(868567, 868567)
 All the samples showed bulksuperconductivity with Tc  3839 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 11, 'B', 1],[64.0, 5.8, ',', 2],[81.0, 40, 'K', 2],[86.0, 12, '%', 2],[207.0, 50, 'K', 5],[210.0, 10, 'T', 5]

Mg
###Effects of unreacted Mg impurities on the transport properties of MgB2|C. U. Jung,Heon-Jung Kim,Min-Seok Park,Mun-Seog Kim,J. Y. Kim,Zhonglian Du,Sung-Ik Lee,K. H. Kim,J. B. Betts,M. Jaime,A. H. Lacerda,G. S. Boebinger###
(868587, 868587)
 The samples containing the least amount ofunreacted Mg showed the highest Tc and the sharpest transition width(DeltaTc).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 11, 'B', 2],[44.0, 5.8, ',', 1],[61.0, 40, 'K', 1],[66.0, 12, '%', 1],[187.0, 50, 'K', 4],[190.0, 10, 'T', 4]

Tc
###Effects of unreacted Mg impurities on the transport properties of MgB2|C. U. Jung,Heon-Jung Kim,Min-Seok Park,Mun-Seog Kim,J. Y. Kim,Zhonglian Du,Sung-Ik Lee,K. H. Kim,J. B. Betts,M. Jaime,A. H. Lacerda,G. S. Boebinger###
(868595, 868595)
 The samples containing the least amount ofunreacted Mg showed the highest Tc and the sharpest transition width(DeltaTc).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 11, 'B', 2],[36.0, 5.8, ',', 1],[53.0, 40, 'K', 1],[58.0, 12, '%', 1],[179.0, 50, 'K', 4],[182.0, 10, 'T', 4]

Tc
###Effects of unreacted Mg impurities on the transport properties of MgB2|C. U. Jung,Heon-Jung Kim,Min-Seok Park,Mun-Seog Kim,J. Y. Kim,Zhonglian Du,Sung-Ik Lee,K. H. Kim,J. B. Betts,M. Jaime,A. H. Lacerda,G. S. Boebinger###
(868610, 868610)
 The samples containing the least amount ofunreacted Mg showed the highest Tc and the sharpest transition width(DeltaTc).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 11, 'B', 2],[21.0, 5.8, ',', 1],[38.0, 40, 'K', 1],[43.0, 12, '%', 1],[164.0, 50, 'K', 4],[167.0, 10, 'T', 4]

Mg
###Effects of unreacted Mg impurities on the transport properties of MgB2|C. U. Jung,Heon-Jung Kim,Min-Seok Park,Mun-Seog Kim,J. Y. Kim,Zhonglian Du,Sung-Ik Lee,K. H. Kim,J. B. Betts,M. Jaime,A. H. Lacerda,G. S. Boebinger###
(868715, 868715)
 The samples containing appreciable amounts of unreacted Mg showed quitedifferent behaviors; the values of DeltaTc, RRR, and MR were much larger.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[180.0, 11, 'B', 5],[84.0, 5.8, ',', 2],[67.0, 40, 'K', 2],[62.0, 12, '%', 2],[59.0, 50, 'K', 1],[62.0, 10, 'T', 1]

Tc
###Effects of unreacted Mg impurities on the transport properties of MgB2|C. U. Jung,Heon-Jung Kim,Min-Seok Park,Mun-Seog Kim,J. Y. Kim,Zhonglian Du,Sung-Ik Lee,K. H. Kim,J. B. Betts,M. Jaime,A. H. Lacerda,G. S. Boebinger###
(868734, 868734)
 The samples containing appreciable amounts of unreacted Mg showed quitedifferent behaviors; the values of DeltaTc, RRR, and MR were much larger.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[199.0, 11, 'B', 5],[103.0, 5.8, ',', 2],[86.0, 40, 'K', 2],[81.0, 12, '%', 2],[40.0, 50, 'K', 1],[43.0, 10, 'T', 1]

Mg
###Effects of unreacted Mg impurities on the transport properties of MgB2|C. U. Jung,Heon-Jung Kim,Min-Seok Park,Mun-Seog Kim,J. Y. Kim,Zhonglian Du,Sung-Ik Lee,K. H. Kim,J. B. Betts,M. Jaime,A. H. Lacerda,G. S. Boebinger###
(868798, 868798)
 Anupturn appeared in resistivity of the samples below about 50 K at 10 T and isthought to be due to the unreacted Mg.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[263.0, 11, 'B', 6],[167.0, 5.8, ',', 3],[150.0, 40, 'K', 3],[145.0, 12, '%', 3],[24.0, 50, 'K', 0],[21.0, 10, 'T', 0]

In
###Spin-polarized bipolar transport and its applications|S. Das Sarma,Jaroslav Fabian,Igor Zutic###
(868824, 868824)
 In spin-polarized bipolar transport both electrons and holes in dopedsemiconductors contribute to spin-charge coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[246.0, 1000, '%', 3]

(MnAs)
###Spin-polarized Tunneling in Hybrid Metal-Semiconductor Magnetic Tunnel Junctions|S. H. Chun,S. J. Potashnik,K. C. Ku,P. Schiffer,N. Samarth###
(869288, 869291)
This is indicated by a large tunneling magnetoresistance (up to 30%) at lowtemperatures in epitaxial magnetic tunnel junctions composed of a ferromagneticmetal (MnAs) and a ferromagnetic semiconductor (GaMnAs) separated by anonmagnetic semiconductor (AlAs).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 30, '%', 0]

(GaMnAs)
###Spin-polarized Tunneling in Hybrid Metal-Semiconductor Magnetic Tunnel Junctions|S. H. Chun,S. J. Potashnik,K. C. Ku,P. Schiffer,N. Samarth###
(869301, 869305)
This is indicated by a large tunneling magnetoresistance (up to 30%) at lowtemperatures in epitaxial magnetic tunnel junctions composed of a ferromagneticmetal (MnAs) and a ferromagnetic semiconductor (GaMnAs) separated by anonmagnetic semiconductor (AlAs).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 30, '%', 0]

(AlAs)
###Spin-polarized Tunneling in Hybrid Metal-Semiconductor Magnetic Tunnel Junctions|S. H. Chun,S. J. Potashnik,K. C. Ku,P. Schiffer,N. Samarth###
(869318, 869321)
This is indicated by a large tunneling magnetoresistance (up to 30%) at lowtemperatures in epitaxial magnetic tunnel junctions composed of a ferromagneticmetal (MnAs) and a ferromagnetic semiconductor (GaMnAs) separated by anonmagnetic semiconductor (AlAs).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 30, '%', 0]

V1
###Spin-polarized Tunneling in Hybrid Metal-Semiconductor Magnetic Tunnel Junctions|S. H. Chun,S. J. Potashnik,K. C. Ku,P. Schiffer,N. Samarth###
(869382, 869383)
 The low temperature conductance-voltage characteristics show a zerobias anomaly and a V1/2 dependence of the conductance, indicating acorrelation gap in the density of states of GaMnAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 30, '%', 2]

GaMnAs
###Spin-polarized Tunneling in Hybrid Metal-Semiconductor Magnetic Tunnel Junctions|S. H. Chun,S. J. Potashnik,K. C. Ku,P. Schiffer,N. Samarth###
(869417, 869419)
 The low temperature conductance-voltage characteristics show a zerobias anomaly and a V1/2 dependence of the conductance, indicating acorrelation gap in the density of states of GaMnAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 30, '%', 2]

MnAs/AlAs
###Spin-polarized Tunneling in Hybrid Metal-Semiconductor Magnetic Tunnel Junctions|S. H. Chun,S. J. Potashnik,K. C. Ku,P. Schiffer,N. Samarth###
(869431, 869435)
 These experiments suggestthat MnAs/AlAs heterostructures offer well characterized tunnel junctions forhigh efficiency spin injection into GaAs.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[175.0, 30, '%', 3]

GaAs
###Spin-polarized Tunneling in Hybrid Metal-Semiconductor Magnetic Tunnel Junctions|S. H. Chun,S. J. Potashnik,K. C. Ku,P. Schiffer,N. Samarth###
(869462, 869463)
 These experiments suggestthat MnAs/AlAs heterostructures offer well characterized tunnel junctions forhigh efficiency spin injection into GaAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[206.0, 30, '%', 3]

Ga1-x
###Low temperature annealing studies of Ga1-xMnxAs|I. Kuryliszyn,T. Wojtowicz,X. Liu,J. K. Furdyna,W. Dobrowolski,J. -M. Broto,M. Goiran,O. Portugall,H. Rakoto,B. Raquet###
(869484, 869487)
Low temperature annealing studies of Ga1-xMnxAs.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[127.0, 0, 'C', 2]

As
###Low temperature annealing studies of Ga1-xMnxAs|I. Kuryliszyn,T. Wojtowicz,X. Liu,J. K. Furdyna,W. Dobrowolski,J. -M. Broto,M. Goiran,O. Portugall,H. Rakoto,B. Raquet###
(869489, 869489)
Low temperature annealing studies of Ga1-xMnxAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 0, 'C', 2]

S
###Low temperature annealing studies of Ga1-xMnxAs|I. Kuryliszyn,T. Wojtowicz,X. Liu,J. K. Furdyna,W. Dobrowolski,J. -M. Broto,M. Goiran,O. Portugall,H. Rakoto,B. Raquet###
(869514, 869514)
 High- and low-field magneto-transport measurements, as well as SQ<missing VAR>UID<missing VAR>measurements of magnetization, were carried out on Ga1-xMnxAs epilayers grownby low temperature molecular beam epitaxy, and subsequently annealed undervarious conditions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 0, 'C', 1]

UI
###Low temperature annealing studies of Ga1-xMnxAs|I. Kuryliszyn,T. Wojtowicz,X. Liu,J. K. Furdyna,W. Dobrowolski,J. -M. Broto,M. Goiran,O. Portugall,H. Rakoto,B. Raquet###
(869516, 869517)
 High- and low-field magneto-transport measurements, as well as SQ<missing VAR>UID<missing VAR>measurements of magnetization, were carried out on Ga1-xMnxAs epilayers grownby low temperature molecular beam epitaxy, and subsequently annealed undervarious conditions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
[97.0, 0, 'C', 1]

Ga1-x
###Low temperature annealing studies of Ga1-xMnxAs|I. Kuryliszyn,T. Wojtowicz,X. Liu,J. K. Furdyna,W. Dobrowolski,J. -M. Broto,M. Goiran,O. Portugall,H. Rakoto,B. Raquet###
(869536, 869539)
 High- and low-field magneto-transport measurements, as well as SQ<missing VAR>UID<missing VAR>measurements of magnetization, were carried out on Ga1-xMnxAs epilayers grownby low temperature molecular beam epitaxy, and subsequently annealed undervarious conditions.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[75.0, 0, 'C', 1]

As
###Low temperature annealing studies of Ga1-xMnxAs|I. Kuryliszyn,T. Wojtowicz,X. Liu,J. K. Furdyna,W. Dobrowolski,J. -M. Broto,M. Goiran,O. Portugall,H. Rakoto,B. Raquet###
(869541, 869541)
 High- and low-field magneto-transport measurements, as well as SQ<missing VAR>UID<missing VAR>measurements of magnetization, were carried out on Ga1-xMnxAs epilayers grownby low temperature molecular beam epitaxy, and subsequently annealed undervarious conditions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 0, 'C', 1]

Ga1-x
###Low temperature annealing studies of Ga1-xMnxAs|I. Kuryliszyn,T. Wojtowicz,X. Liu,J. K. Furdyna,W. Dobrowolski,J. -M. Broto,M. Goiran,O. Portugall,H. Rakoto,B. Raquet###
(869692, 869695)
 A decreaseof the coercive field and of magnetoresistivity is also observed for Ga1-xMnxAsannealed at optimal conditions.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[78.0, 0, 'C', 2]

As
###Low temperature annealing studies of Ga1-xMnxAs|I. Kuryliszyn,T. Wojtowicz,X. Liu,J. K. Furdyna,W. Dobrowolski,J. -M. Broto,M. Goiran,O. Portugall,H. Rakoto,B. Raquet###
(869697, 869697)
 A decreaseof the coercive field and of magnetoresistivity is also observed for Ga1-xMnxAsannealed at optimal conditions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 0, 'C', 2]

Ga1-x
###Low temperature annealing studies of Ga1-xMnxAs|I. Kuryliszyn,T. Wojtowicz,X. Liu,J. K. Furdyna,W. Dobrowolski,J. -M. Broto,M. Goiran,O. Portugall,H. Rakoto,B. Raquet###
(869749, 869752)
 We suggest that the experimental resultsreported in this paper are related to changes in the domain structure ofGa1-xMnxAs.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[135.0, 0, 'C', 3]

As
###Low temperature annealing studies of Ga1-xMnxAs|I. Kuryliszyn,T. Wojtowicz,X. Liu,J. K. Furdyna,W. Dobrowolski,J. -M. Broto,M. Goiran,O. Portugall,H. Rakoto,B. Raquet###
(869754, 869754)
 We suggest that the experimental resultsreported in this paper are related to changes in the domain structure ofGa1-xMnxAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 0, 'C', 3]

Nd0.67Sr0.33Mn1-x
###Magneto- and Electrotransport Properties of Nd0.67Sr0.33Mn1-xFexO3 (x = 0.00, 0.05)|Chang Yoke Ling,C. K. Ong###
(869776, 869783)
Magneto- and Electrotransport Properties of Nd0.67Sr0.33Mn1-xFexO3 (x<missing VAR>  0.00, 0.05).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[9.0, 0.0, ',', 0],[68.0, 0.0, 'and', 1],[99.0, 33, '%', 2],[145.0, 273, 'K', 2],[161.0, 10, 'kOe', 2],[224.0, 90, '%', 4],[248.0, 10, 'kOe', 4],[255.0, 100, 'K', 4],[278.0, 43, '%', 4]

O3
###Magneto- and Electrotransport Properties of Nd0.67Sr0.33Mn1-xFexO3 (x = 0.00, 0.05)|Chang Yoke Ling,C. K. Ong###
(869785, 869786)
Magneto- and Electrotransport Properties of Nd0.67Sr0.33Mn1-xFexO3 (x<missing VAR>  0.00, 0.05).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 0.0, ',', 0],[65.0, 0.0, 'and', 1],[96.0, 33, '%', 2],[142.0, 273, 'K', 2],[158.0, 10, 'kOe', 2],[221.0, 90, '%', 4],[245.0, 10, 'kOe', 4],[252.0, 100, 'K', 4],[275.0, 43, '%', 4]

Nd0.67
###Magneto- and Electrotransport Properties of Nd0.67Sr0.33Mn1-xFexO3 (x = 0.00, 0.05)|Chang Yoke Ling,C. K. Ong###
(869818, 869819)
 Simultaneous studies on the magnetic and electrotransport properties ofNd0.67 Sr0.33 Mn1-x Fex<missing VAR> O3 polycrystalline bulk and epitaxial thinfilms (x<missing VAR>  0.00 and 0.05) have been carried out.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 0.0, ',', 1],[32.0, 0.0, 'and', 0],[63.0, 33, '%', 1],[109.0, 273, 'K', 1],[125.0, 10, 'kOe', 1],[188.0, 90, '%', 3],[212.0, 10, 'kOe', 3],[219.0, 100, 'K', 3],[242.0, 43, '%', 3]

Sr0.33
###Magneto- and Electrotransport Properties of Nd0.67Sr0.33Mn1-xFexO3 (x = 0.00, 0.05)|Chang Yoke Ling,C. K. Ong###
(869821, 869822)
 Simultaneous studies on the magnetic and electrotransport properties ofNd0.67 Sr0.33 Mn1-x Fex<missing VAR> O3 polycrystalline bulk and epitaxial thinfilms (x<missing VAR>  0.00 and 0.05) have been carried out.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 0.0, ',', 1],[29.0, 0.0, 'and', 0],[60.0, 33, '%', 1],[106.0, 273, 'K', 1],[122.0, 10, 'kOe', 1],[185.0, 90, '%', 3],[209.0, 10, 'kOe', 3],[216.0, 100, 'K', 3],[239.0, 43, '%', 3]

Mn1-x
###Magneto- and Electrotransport Properties of Nd0.67Sr0.33Mn1-xFexO3 (x = 0.00, 0.05)|Chang Yoke Ling,C. K. Ong###
(869824, 869827)
 Simultaneous studies on the magnetic and electrotransport properties ofNd0.67 Sr0.33 Mn1-x Fex<missing VAR> O3 polycrystalline bulk and epitaxial thinfilms (x<missing VAR>  0.00 and 0.05) have been carried out.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[32.0, 0.0, ',', 1],[24.0, 0.0, 'and', 0],[55.0, 33, '%', 1],[101.0, 273, 'K', 1],[117.0, 10, 'kOe', 1],[180.0, 90, '%', 3],[204.0, 10, 'kOe', 3],[211.0, 100, 'K', 3],[234.0, 43, '%', 3]

Fe
###Magneto- and Electrotransport Properties of Nd0.67Sr0.33Mn1-xFexO3 (x = 0.00, 0.05)|Chang Yoke Ling,C. K. Ong###
(869829, 869829)
 Simultaneous studies on the magnetic and electrotransport properties ofNd0.67 Sr0.33 Mn1-x Fex<missing VAR> O3 polycrystalline bulk and epitaxial thinfilms (x<missing VAR>  0.00 and 0.05) have been carried out.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 0.0, ',', 1],[22.0, 0.0, 'and', 0],[53.0, 33, '%', 1],[99.0, 273, 'K', 1],[115.0, 10, 'kOe', 1],[178.0, 90, '%', 3],[202.0, 10, 'kOe', 3],[209.0, 100, 'K', 3],[232.0, 43, '%', 3]

O3
###Magneto- and Electrotransport Properties of Nd0.67Sr0.33Mn1-xFexO3 (x = 0.00, 0.05)|Chang Yoke Ling,C. K. Ong###
(869832, 869833)
 Simultaneous studies on the magnetic and electrotransport properties ofNd0.67 Sr0.33 Mn1-x Fex<missing VAR> O3 polycrystalline bulk and epitaxial thinfilms (x<missing VAR>  0.00 and 0.05) have been carried out.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 0.0, ',', 1],[18.0, 0.0, 'and', 0],[49.0, 33, '%', 1],[95.0, 273, 'K', 1],[111.0, 10, 'kOe', 1],[174.0, 90, '%', 3],[198.0, 10, 'kOe', 3],[205.0, 100, 'K', 3],[228.0, 43, '%', 3]

Nd0.67
###Magneto- and Electrotransport Properties of Nd0.67Sr0.33Mn1-xFexO3 (x = 0.00, 0.05)|Chang Yoke Ling,C. K. Ong###
(869891, 869892)
 A magnetoresistance (MR) ashigh as  33% is observed for Nd0.67 Sr0.33 MnO3 bulk at themetal-insulator transition (MIT) temperature (Tp) of 273 K in a magnetic field(H) of 10 kOe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 0.0, ',', 2],[40.0, 0.0, 'and', 1],[9.0, 33, '%', 0],[36.0, 273, 'K', 0],[52.0, 10, 'kOe', 0],[115.0, 90, '%', 2],[139.0, 10, 'kOe', 2],[146.0, 100, 'K', 2],[169.0, 43, '%', 2]

Sr0.33
###Magneto- and Electrotransport Properties of Nd0.67Sr0.33Mn1-xFexO3 (x = 0.00, 0.05)|Chang Yoke Ling,C. K. Ong###
(869894, 869895)
 A magnetoresistance (MR) ashigh as  33% is observed for Nd0.67 Sr0.33 MnO3 bulk at themetal-insulator transition (MIT) temperature (Tp) of 273 K in a magnetic field(H) of 10 kOe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 0.0, ',', 2],[43.0, 0.0, 'and', 1],[12.0, 33, '%', 0],[33.0, 273, 'K', 0],[49.0, 10, 'kOe', 0],[112.0, 90, '%', 2],[136.0, 10, 'kOe', 2],[143.0, 100, 'K', 2],[166.0, 43, '%', 2]

MnO3
###Magneto- and Electrotransport Properties of Nd0.67Sr0.33Mn1-xFexO3 (x = 0.00, 0.05)|Chang Yoke Ling,C. K. Ong###
(869897, 869899)
 A magnetoresistance (MR) ashigh as  33% is observed for Nd0.67 Sr0.33 MnO3 bulk at themetal-insulator transition (MIT) temperature (Tp) of 273 K in a magnetic field(H) of 10 kOe.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 0.0, ',', 2],[46.0, 0.0, 'and', 1],[15.0, 33, '%', 0],[29.0, 273, 'K', 0],[45.0, 10, 'kOe', 0],[108.0, 90, '%', 2],[132.0, 10, 'kOe', 2],[139.0, 100, 'K', 2],[162.0, 43, '%', 2]

(H)
###Magneto- and Electrotransport Properties of Nd0.67Sr0.33Mn1-xFexO3 (x = 0.00, 0.05)|Chang Yoke Ling,C. K. Ong###
(869939, 869941)
 A magnetoresistance (MR) ashigh as  33% is observed for Nd0.67 Sr0.33 MnO3 bulk at themetal-insulator transition (MIT) temperature (Tp) of 273 K in a magnetic field(H) of 10 kOe.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 0.0, ',', 2],[88.0, 0.0, 'and', 1],[57.0, 33, '%', 0],[11.0, 273, 'K', 0],[3.0, 10, 'kOe', 0],[66.0, 90, '%', 2],[90.0, 10, 'kOe', 2],[97.0, 100, 'K', 2],[120.0, 43, '%', 2]

Fe
###Magneto- and Electrotransport Properties of Nd0.67Sr0.33Mn1-xFexO3 (x = 0.00, 0.05)|Chang Yoke Ling,C. K. Ong###
(869947, 869947)
 Fe substitution at Mn sites reduces the ferromagnetic (FM)ordering temperature (Tc) and leads to an overall increase in MR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 0.0, ',', 3],[96.0, 0.0, 'and', 2],[65.0, 33, '%', 1],[19.0, 273, 'K', 1],[3.0, 10, 'kOe', 1],[60.0, 90, '%', 1],[84.0, 10, 'kOe', 1],[91.0, 100, 'K', 1],[114.0, 43, '%', 1]

Mn
###Magneto- and Electrotransport Properties of Nd0.67Sr0.33Mn1-xFexO3 (x = 0.00, 0.05)|Chang Yoke Ling,C. K. Ong###
(869953, 869953)
 Fe substitution at Mn sites reduces the ferromagnetic (FM)ordering temperature (Tc) and leads to an overall increase in MR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 0.0, ',', 3],[102.0, 0.0, 'and', 2],[71.0, 33, '%', 1],[25.0, 273, 'K', 1],[9.0, 10, 'kOe', 1],[54.0, 90, '%', 1],[78.0, 10, 'kOe', 1],[85.0, 100, 'K', 1],[108.0, 43, '%', 1]

F
###Magneto- and Electrotransport Properties of Nd0.67Sr0.33Mn1-xFexO3 (x = 0.00, 0.05)|Chang Yoke Ling,C. K. Ong###
(869964, 869964)
 Fe substitution at Mn sites reduces the ferromagnetic (FM)ordering temperature (Tc) and leads to an overall increase in MR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[172.0, 0.0, ',', 3],[113.0, 0.0, 'and', 2],[82.0, 33, '%', 1],[36.0, 273, 'K', 1],[20.0, 10, 'kOe', 1],[43.0, 90, '%', 1],[67.0, 10, 'kOe', 1],[74.0, 100, 'K', 1],[97.0, 43, '%', 1]

H
###Magneto- and Electrotransport Properties of Nd0.67Sr0.33Mn1-xFexO3 (x = 0.00, 0.05)|Chang Yoke Ling,C. K. Ong###
(870029, 870029)
 MR as highas  90% is observed for thin film (x<missing VAR>  0.05) at H  10 kOe with Tp  100 Kwhile the corresponding bulk has a MR of only  43%.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[237.0, 0.0, ',', 4],[178.0, 0.0, 'and', 3],[147.0, 33, '%', 2],[101.0, 273, 'K', 2],[85.0, 10, 'kOe', 2],[22.0, 90, '%', 0],[2.0, 10, 'kOe', 0],[9.0, 100, 'K', 0],[32.0, 43, '%', 0]

B
###Transport and magnetic properties in multi-walled carbon nanotube ropes: Evidence for superconductivity above room temperature|Guo-meng Zhao###
(870382, 870382)
 B 49, 15122 (1994)) as arising from the paramagnetic Meissnereffect in a multiply connected superconducting network.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 72, ',', 4],[10.0, 300, 'K', 2],[2.0, 49, ',', 0]

(CPP)
###Resistance of multilayers with long length scale interfacial roughness|Jason Alicea,Selman Hershfield###
(870590, 870594)
 When the electronic mean free paths are small compared to thelayer thicknesses, the current flow is non-uniform, and the resistancedecreases in the Current-Perpendicular-to-Plane (CPP) configuration andincreases in the Current-In-Plane (CIP) configuration.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Resistance of multilayers with long length scale interfacial roughness|Jason Alicea,Selman Hershfield###
(870609, 870609)
 When the electronic mean free paths are small compared to thelayer thicknesses, the current flow is non-uniform, and the resistancedecreases in the Current-Perpendicular-to-Plane (CPP) configuration andincreases in the Current-In-Plane (CIP) configuration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(CIP)
###Resistance of multilayers with long length scale interfacial roughness|Jason Alicea,Selman Hershfield###
(870613, 870617)
 When the electronic mean free paths are small compared to thelayer thicknesses, the current flow is non-uniform, and the resistancedecreases in the Current-Perpendicular-to-Plane (CPP) configuration andincreases in the Current-In-Plane (CIP) configuration.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CPP
###Resistance of multilayers with long length scale interfacial roughness|Jason Alicea,Selman Hershfield###
(870670, 870672)
 For mean free paths muchlonger than the layer thicknesses, the current flow is uniform, and theresistance increases in both the CPP and CIP configurations due to enhancedsurface scattering.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CIP
###Resistance of multilayers with long length scale interfacial roughness|Jason Alicea,Selman Hershfield###
(870676, 870678)
 For mean free paths muchlonger than the layer thicknesses, the current flow is uniform, and theresistance increases in both the CPP and CIP configurations due to enhancedsurface scattering.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Resistance of multilayers with long length scale interfacial roughness|Jason Alicea,Selman Hershfield###
(870694, 870694)
 In both the CPP and CIP geometries, the giantmagnetoresistance can be either enhanced or reduced by the presence of longlength scale interface roughness depending on the parameters.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CPP
###Resistance of multilayers with long length scale interfacial roughness|Jason Alicea,Selman Hershfield###
(870700, 870702)
 In both the CPP and CIP geometries, the giantmagnetoresistance can be either enhanced or reduced by the presence of longlength scale interface roughness depending on the parameters.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CIP
###Resistance of multilayers with long length scale interfacial roughness|Jason Alicea,Selman Hershfield###
(870706, 870708)
 In both the CPP and CIP geometries, the giantmagnetoresistance can be either enhanced or reduced by the presence of longlength scale interface roughness depending on the parameters.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CPP
###Resistance of multilayers with long length scale interfacial roughness|Jason Alicea,Selman Hershfield###
(870772, 870774)
 Finally, thechanges in the CPP and CIP resistivities due to increasing interface roughnessare estimated using experimentally determined parameters.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CIP
###Resistance of multilayers with long length scale interfacial roughness|Jason Alicea,Selman Hershfield###
(870778, 870780)
 Finally, thechanges in the CPP and CIP resistivities due to increasing interface roughnessare estimated using experimentally determined parameters.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

InAs/AlSb
###Characterization of one-dimensional quantum channels in InAs/AlSb|C. H. Yang,M. J. Yang,K. A. Cheng,J. C. Culbertson###
(870830, 870834)
Characterization of one-dimensional quantum channels in InAs/AlSb.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[69.0, 3, 'nm', 2],[206.0, 4, 'K', 3]

InAs
###Characterization of one-dimensional quantum channels in InAs/AlSb|C. H. Yang,M. J. Yang,K. A. Cheng,J. C. Culbertson###
(870864, 870865)
 We report the magnetoresistance characteristics of one-dimensional electronsconfined in a single InAs quantum well sandwiched between AlSb barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 3, 'nm', 1],[175.0, 4, 'K', 2]

AlSb
###Characterization of one-dimensional quantum channels in InAs/AlSb|C. H. Yang,M. J. Yang,K. A. Cheng,J. C. Culbertson###
(870875, 870876)
 We report the magnetoresistance characteristics of one-dimensional electronsconfined in a single InAs quantum well sandwiched between AlSb barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 3, 'nm', 1],[164.0, 4, 'K', 2]

As
###Characterization of one-dimensional quantum channels in InAs/AlSb|C. H. Yang,M. J. Yang,K. A. Cheng,J. C. Culbertson###
(870881, 870881)
 As aresult of a novel nanofabrication scheme that utilizes a 3nm-shallow wetchemical etching to define the electrostatic lateral confinement, the system isfound to possess three important properties specular boundary scattering, astrong lateral confinement potential, and a conducting channel width that isapproximately the lithography width.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 3, 'nm', 0],[159.0, 4, 'K', 1]

In
###Characterization of one-dimensional quantum channels in InAs/AlSb|C. H. Yang,M. J. Yang,K. A. Cheng,J. C. Culbertson###
(871056, 871056)
 In a ring geometry, we have observed Aharonov-Bohm interference thatexhibits characteristics different from those of the GaAs counterpart due tothe ballistic nature of electron transport and the narrowness of the conductingchannel width.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 3, 'nm', 2],[16.0, 4, 'K', 1]

GaAs
###Characterization of one-dimensional quantum channels in InAs/AlSb|C. H. Yang,M. J. Yang,K. A. Cheng,J. C. Culbertson###
(871094, 871095)
 In a ring geometry, we have observed Aharonov-Bohm interference thatexhibits characteristics different from those of the GaAs counterpart due tothe ballistic nature of electron transport and the narrowness of the conductingchannel width.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[191.0, 3, 'nm', 2],[54.0, 4, 'K', 1]

AlAs
###Magnetic Field Induced Spin Polarization of AlAs Two-dimensional Electrons|E. P. De Poortere,E. Tutuc,Y. P. Shkolnikov,K. Vakili,M. Shayegan###
(871154, 871155)
Magnetic Field Induced Spin Polarization of AlAs Two-dimensional Electrons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 2, 'D', 2],[213.0, 4, ',', 4],[231.0, 2, 'D', 4],[283.0, 2, 'D', 5]

BP
###Magnetic Field Induced Spin Polarization of AlAs Two-dimensional Electrons|E. P. De Poortere,E. Tutuc,Y. P. Shkolnikov,K. Vakili,M. Shayegan###
(871202, 871203)
 Two-dimensional (2D) electrons in an in-plane magnetic field become fullyspin polarized above a field BP, which we can determine from the in-planemagnetoresistance.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 2, 'D', 1],[165.0, 4, ',', 3],[183.0, 2, 'D', 3],[235.0, 2, 'D', 4]

AlAs
###Magnetic Field Induced Spin Polarization of AlAs Two-dimensional Electrons|E. P. De Poortere,E. Tutuc,Y. P. Shkolnikov,K. Vakili,M. Shayegan###
(871240, 871241)
 We perform such measurements in modulation-doped AlAselectron systems, and find that the field BP increases approximately linearlywith 2D electron density.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 2, 'D', 0],[127.0, 4, ',', 2],[145.0, 2, 'D', 2],[197.0, 2, 'D', 3]

BP
###Magnetic Field Induced Spin Polarization of AlAs Two-dimensional Electrons|E. P. De Poortere,E. Tutuc,Y. P. Shkolnikov,K. Vakili,M. Shayegan###
(871259, 871260)
 We perform such measurements in modulation-doped AlAselectron systems, and find that the field BP increases approximately linearlywith 2D electron density.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 2, 'D', 0],[108.0, 4, ',', 2],[126.0, 2, 'D', 2],[178.0, 2, 'D', 3]

Si
###Magnetic Field Induced Spin Polarization of AlAs Two-dimensional Electrons|E. P. De Poortere,E. Tutuc,Y. P. Shkolnikov,K. Vakili,M. Shayegan###
(871415, 871415)
 These observations are at odds with results obtainedin Si-M<missing VAR>OSFE<missing VAR>Ts, but qualitatively confirm spin polarization studies of 2D GaAscarriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 2, 'D', 3],[47.0, 4, ',', 1],[29.0, 2, 'D', 1],[23.0, 2, 'D', 0]

OSF
###Magnetic Field Induced Spin Polarization of AlAs Two-dimensional Electrons|E. P. De Poortere,E. Tutuc,Y. P. Shkolnikov,K. Vakili,M. Shayegan###
(871418, 871420)
 These observations are at odds with results obtainedin Si-M<missing VAR>OSFE<missing VAR>Ts, but qualitatively confirm spin polarization studies of 2D GaAscarriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 2, 'D', 3],[50.0, 4, ',', 1],[32.0, 2, 'D', 1],[18.0, 2, 'D', 0]

GaAs
###Magnetic Field Induced Spin Polarization of AlAs Two-dimensional Electrons|E. P. De Poortere,E. Tutuc,Y. P. Shkolnikov,K. Vakili,M. Shayegan###
(871440, 871441)
 These observations are at odds with results obtainedin Si-M<missing VAR>OSFE<missing VAR>Ts, but qualitatively confirm spin polarization studies of 2D GaAscarriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[170.0, 2, 'D', 3],[72.0, 4, ',', 1],[54.0, 2, 'D', 1],[2.0, 2, 'D', 0]

B
###Fermiology and superconductivity studies on the non-tetrachalcogenafulvalene structured organic superconductor beta-(BDA-TTP)_2SbF_6|E. S. Choi,E. Jobiling,A. Wade,E. Goetz,J. S. Brooks,J. Yamada,T. Mizutani,T. Kinoshita,M. Tokumoto###
(871480, 871480)
Fermiology and superconductivity studies on the non-tetrachalcogenafulvalene structured organic superconductor beta-(BD<missing VAR>A-TTP)2SbF6.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 4050, 'tesla', 3]

P
###Fermiology and superconductivity studies on the non-tetrachalcogenafulvalene structured organic superconductor beta-(BDA-TTP)_2SbF_6|E. S. Choi,E. Jobiling,A. Wade,E. Goetz,J. S. Brooks,J. Yamada,T. Mizutani,T. Kinoshita,M. Tokumoto###
(871486, 871486)
Fermiology and superconductivity studies on the non-tetrachalcogenafulvalene structured organic superconductor beta-(BD<missing VAR>A-TTP)2SbF6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 4050, 'tesla', 3]

SbF6
###Fermiology and superconductivity studies on the non-tetrachalcogenafulvalene structured organic superconductor beta-(BDA-TTP)_2SbF_6|E. S. Choi,E. Jobiling,A. Wade,E. Goetz,J. S. Brooks,J. Yamada,T. Mizutani,T. Kinoshita,M. Tokumoto###
(871489, 871491)
Fermiology and superconductivity studies on the non-tetrachalcogenafulvalene structured organic superconductor beta-(BD<missing VAR>A-TTP)2SbF6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 4050, 'tesla', 3]

F
###Fermiology and superconductivity studies on the non-tetrachalcogenafulvalene structured organic superconductor beta-(BDA-TTP)_2SbF_6|E. S. Choi,E. Jobiling,A. Wade,E. Goetz,J. S. Brooks,J. Yamada,T. Mizutani,T. Kinoshita,M. Tokumoto###
(871518, 871518)
 The quantum oscillatory effect and superconductivity in anon-tetrachalcogenafulvalene (T<missing VAR>CF) structure based organic superconductorbeta-(BD<missing VAR>A-TTP)2SbF6 are studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 4050, 'tesla', 2]

B
###Fermiology and superconductivity studies on the non-tetrachalcogenafulvalene structured organic superconductor beta-(BDA-TTP)_2SbF_6|E. S. Choi,E. Jobiling,A. Wade,E. Goetz,J. S. Brooks,J. Yamada,T. Mizutani,T. Kinoshita,M. Tokumoto###
(871533, 871533)
 The quantum oscillatory effect and superconductivity in anon-tetrachalcogenafulvalene (T<missing VAR>CF) structure based organic superconductorbeta-(BD<missing VAR>A-TTP)2SbF6 are studied.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 4050, 'tesla', 2]

P
###Fermiology and superconductivity studies on the non-tetrachalcogenafulvalene structured organic superconductor beta-(BDA-TTP)_2SbF_6|E. S. Choi,E. Jobiling,A. Wade,E. Goetz,J. S. Brooks,J. Yamada,T. Mizutani,T. Kinoshita,M. Tokumoto###
(871539, 871539)
 The quantum oscillatory effect and superconductivity in anon-tetrachalcogenafulvalene (T<missing VAR>CF) structure based organic superconductorbeta-(BD<missing VAR>A-TTP)2SbF6 are studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 4050, 'tesla', 2]

SbF6
###Fermiology and superconductivity studies on the non-tetrachalcogenafulvalene structured organic superconductor beta-(BDA-TTP)_2SbF_6|E. S. Choi,E. Jobiling,A. Wade,E. Goetz,J. S. Brooks,J. Yamada,T. Mizutani,T. Kinoshita,M. Tokumoto###
(871542, 871544)
 The quantum oscillatory effect and superconductivity in anon-tetrachalcogenafulvalene (T<missing VAR>CF) structure based organic superconductorbeta-(BD<missing VAR>A-TTP)2SbF6 are studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 4050, 'tesla', 2]

H
###Fermiology and superconductivity studies on the non-tetrachalcogenafulvalene structured organic superconductor beta-(BDA-TTP)_2SbF_6|E. S. Choi,E. Jobiling,A. Wade,E. Goetz,J. S. Brooks,J. Yamada,T. Mizutani,T. Kinoshita,M. Tokumoto###
(871565, 871565)
 Here the Shubnikov-de Haas effect (SdH) andangular dependent magnetoresistance oscillations (AMRO) are observed.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 4050, 'tesla', 1]

O
###Fermiology and superconductivity studies on the non-tetrachalcogenafulvalene structured organic superconductor beta-(BDA-TTP)_2SbF_6|E. S. Choi,E. Jobiling,A. Wade,E. Goetz,J. S. Brooks,J. Yamada,T. Mizutani,T. Kinoshita,M. Tokumoto###
(871583, 871583)
 Here the Shubnikov-de Haas effect (SdH) andangular dependent magnetoresistance oscillations (AMRO) are observed.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 4050, 'tesla', 1]

O
###Fermiology and superconductivity studies on the non-tetrachalcogenafulvalene structured organic superconductor beta-(BDA-TTP)_2SbF_6|E. S. Choi,E. Jobiling,A. Wade,E. Goetz,J. S. Brooks,J. Yamada,T. Mizutani,T. Kinoshita,M. Tokumoto###
(871645, 871645)
 Theoscillation frequency associated with a cylindrical Fermi surface is found tobe about 4050 tesla, which is also verified by the tunnel diode oscillator(TDO) measurement.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 4050, 'tesla', 0]

O
###Fermiology and superconductivity studies on the non-tetrachalcogenafulvalene structured organic superconductor beta-(BDA-TTP)_2SbF_6|E. S. Choi,E. Jobiling,A. Wade,E. Goetz,J. S. Brooks,J. Yamada,T. Mizutani,T. Kinoshita,M. Tokumoto###
(871681, 871681)
 The upper critical field Hc2 measurement in a tiltedmagnetic field and the TDO measurement in the mixed state reveal a highlyanisotropic superconducting nature in this material.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 4050, 'tesla', 1]

B
###Fermiology and superconductivity studies on the non-tetrachalcogenafulvalene structured organic superconductor beta-(BDA-TTP)_2SbF_6|E. S. Choi,E. Jobiling,A. Wade,E. Goetz,J. S. Brooks,J. Yamada,T. Mizutani,T. Kinoshita,M. Tokumoto###
(871727, 871727)
 We compared physicalproperties of beta-(BD<missing VAR>A-TTP)2SbF6 with typical T<missing VAR>CF structure based quasitwo-dimensional organic conductors.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 4050, 'tesla', 2]

P
###Fermiology and superconductivity studies on the non-tetrachalcogenafulvalene structured organic superconductor beta-(BDA-TTP)_2SbF_6|E. S. Choi,E. Jobiling,A. Wade,E. Goetz,J. S. Brooks,J. Yamada,T. Mizutani,T. Kinoshita,M. Tokumoto###
(871733, 871733)
 We compared physicalproperties of beta-(BD<missing VAR>A-TTP)2SbF6 with typical T<missing VAR>CF structure based quasitwo-dimensional organic conductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 4050, 'tesla', 2]

SbF6
###Fermiology and superconductivity studies on the non-tetrachalcogenafulvalene structured organic superconductor beta-(BDA-TTP)_2SbF_6|E. S. Choi,E. Jobiling,A. Wade,E. Goetz,J. S. Brooks,J. Yamada,T. Mizutani,T. Kinoshita,M. Tokumoto###
(871736, 871738)
 We compared physicalproperties of beta-(BD<missing VAR>A-TTP)2SbF6 with typical T<missing VAR>CF structure based quasitwo-dimensional organic conductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 4050, 'tesla', 2]

CF
###Fermiology and superconductivity studies on the non-tetrachalcogenafulvalene structured organic superconductor beta-(BDA-TTP)_2SbF_6|E. S. Choi,E. Jobiling,A. Wade,E. Goetz,J. S. Brooks,J. Yamada,T. Mizutani,T. Kinoshita,M. Tokumoto###
(871745, 871746)
 We compared physicalproperties of beta-(BD<missing VAR>A-TTP)2SbF6 with typical T<missing VAR>CF structure based quasitwo-dimensional organic conductors.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 4050, 'tesla', 2]

B
###Fermiology and superconductivity studies on the non-tetrachalcogenafulvalene structured organic superconductor beta-(BDA-TTP)_2SbF_6|E. S. Choi,E. Jobiling,A. Wade,E. Goetz,J. S. Brooks,J. Yamada,T. Mizutani,T. Kinoshita,M. Tokumoto###
(871775, 871775)
 A notable feature of beta-(BD<missing VAR>A-TTP)2SbF6superconductor is a large value of effective cyclotron mass mc12.4/1.1me, which is the largest yet found in an organic superconductor.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 4050, 'tesla', 3]

P
###Fermiology and superconductivity studies on the non-tetrachalcogenafulvalene structured organic superconductor beta-(BDA-TTP)_2SbF_6|E. S. Choi,E. Jobiling,A. Wade,E. Goetz,J. S. Brooks,J. Yamada,T. Mizutani,T. Kinoshita,M. Tokumoto###
(871781, 871781)
 A notable feature of beta-(BD<missing VAR>A-TTP)2SbF6superconductor is a large value of effective cyclotron mass mc12.4/1.1me, which is the largest yet found in an organic superconductor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 4050, 'tesla', 3]

SbF6
###Fermiology and superconductivity studies on the non-tetrachalcogenafulvalene structured organic superconductor beta-(BDA-TTP)_2SbF_6|E. S. Choi,E. Jobiling,A. Wade,E. Goetz,J. S. Brooks,J. Yamada,T. Mizutani,T. Kinoshita,M. Tokumoto###
(871784, 871786)
 A notable feature of beta-(BD<missing VAR>A-TTP)2SbF6superconductor is a large value of effective cyclotron mass mc12.4/1.1me, which is the largest yet found in an organic superconductor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 4050, 'tesla', 3]

URu2Si2
###High Field Studies of the Hidden Order Transition in URu$_2$Si$_2$|M. Jaime,K. H. Kim,G. Jorge,S. McCall,J. A Mydosh###
(872192, 872196)
High Field Studies of the Hidden Order Transition in URu2Si2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0
[64.0, 45, 'T', 1],[90.0, 0, ',', 2],[122.0, 0.35, 'T', 2],[161.0, 0.35, 'T', 2],[176.0, 6, 'K', 2],[223.0, 0.35, 'T', 3],[238.0, 40, 'T', 4]

URu2Si2
###High Field Studies of the Hidden Order Transition in URu$_2$Si$_2$|M. Jaime,K. H. Kim,G. Jorge,S. McCall,J. A Mydosh###
(872224, 872228)
 We studied in detail the low temperature/high magnetic field phases ofURu2Si2 single crystals with specific heat, magnetocaloric effect,and magnetoresistance in magnetic fields up to 45 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0
[32.0, 45, 'T', 0],[58.0, 0, ',', 1],[90.0, 0.35, 'T', 1],[129.0, 0.35, 'T', 1],[144.0, 6, 'K', 1],[191.0, 0.35, 'T', 2],[206.0, 40, 'T', 3]

K
###High Field Studies of the Hidden Order Transition in URu$_2$Si$_2$|M. Jaime,K. H. Kim,G. Jorge,S. McCall,J. A Mydosh###
(872274, 872274)
 Data obtained down to 0.5K, and extrapolated to T<missing VAR>  0, show a suppression of the hidden order phase atHo<missing VAR>(0)  35.9 pm 0.35 T and the appearance of a new phase for magneticfields in excess of H1(0)  36.1 pm 0.35 T observed textitonly attemperatures lower than 6 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 45, 'T', 1],[12.0, 0, ',', 0],[44.0, 0.35, 'T', 0],[83.0, 0.35, 'T', 0],[98.0, 6, 'K', 0],[145.0, 0.35, 'T', 1],[160.0, 40, 'T', 2]

H
###High Field Studies of the Hidden Order Transition in URu$_2$Si$_2$|M. Jaime,K. H. Kim,G. Jorge,S. McCall,J. A Mydosh###
(872308, 872308)
 Data obtained down to 0.5K, and extrapolated to T<missing VAR>  0, show a suppression of the hidden order phase atHo<missing VAR>(0)  35.9 pm 0.35 T and the appearance of a new phase for magneticfields in excess of H1(0)  36.1 pm 0.35 T observed textitonly attemperatures lower than 6 K.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 45, 'T', 1],[22.0, 0, ',', 0],[10.0, 0.35, 'T', 0],[49.0, 0.35, 'T', 0],[64.0, 6, 'K', 0],[111.0, 0.35, 'T', 1],[126.0, 40, 'T', 2]

H1
###High Field Studies of the Hidden Order Transition in URu$_2$Si$_2$|M. Jaime,K. H. Kim,G. Jorge,S. McCall,J. A Mydosh###
(872347, 872348)
 Data obtained down to 0.5K, and extrapolated to T<missing VAR>  0, show a suppression of the hidden order phase atHo<missing VAR>(0)  35.9 pm 0.35 T and the appearance of a new phase for magneticfields in excess of H1(0)  36.1 pm 0.35 T observed textitonly attemperatures lower than 6 K.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 45, 'T', 1],[61.0, 0, ',', 0],[29.0, 0.35, 'T', 0],[9.0, 0.35, 'T', 0],[24.0, 6, 'K', 0],[71.0, 0.35, 'T', 1],[86.0, 40, 'T', 2]

In
###High Field Studies of the Hidden Order Transition in URu$_2$Si$_2$|M. Jaime,K. H. Kim,G. Jorge,S. McCall,J. A Mydosh###
(872375, 872375)
 In turn, complete suppression of this high fieldstate is attained at a critical magnetic field H2(0)  39.7 pm 0.35 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 45, 'T', 2],[89.0, 0, ',', 1],[57.0, 0.35, 'T', 1],[18.0, 0.35, 'T', 1],[3.0, 6, 'K', 1],[44.0, 0.35, 'T', 0],[59.0, 40, 'T', 1]

H2
###High Field Studies of the Hidden Order Transition in URu$_2$Si$_2$|M. Jaime,K. H. Kim,G. Jorge,S. McCall,J. A Mydosh###
(872409, 872410)
 In turn, complete suppression of this high fieldstate is attained at a critical magnetic field H2(0)  39.7 pm 0.35 T.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 45, 'T', 2],[123.0, 0, ',', 1],[91.0, 0.35, 'T', 1],[52.0, 0.35, 'T', 1],[37.0, 6, 'K', 1],[9.0, 0.35, 'T', 0],[24.0, 40, 'T', 1]

No
###High Field Studies of the Hidden Order Transition in URu$_2$Si$_2$|M. Jaime,K. H. Kim,G. Jorge,S. McCall,J. A Mydosh###
(872423, 872423)
No phase transitions are observed above 40 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0
[163.0, 45, 'T', 3],[137.0, 0, ',', 2],[105.0, 0.35, 'T', 2],[66.0, 0.35, 'T', 2],[51.0, 6, 'K', 2],[4.0, 0.35, 'T', 1],[11.0, 40, 'T', 0]

In
###Nanoscale Phase Separation in Colossal Magnetoresistance Materials: A Lesson for the Cuprates?|Elbio Dagotto,Jan Burgy,Adriana Moreo###
(872622, 872622)
 In high temperature superconductors, recent experiments haveshown the existence of intrinsic inhomogeneities in many materials, revealing aphenomenology quite similar to that of manganese oxides.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Nanoscale Phase Separation in Colossal Magnetoresistance Materials: A Lesson for the Cuprates?|Elbio Dagotto,Jan Burgy,Adriana Moreo###
(872710, 872710)
 Inaddition, theoretical speculations are formulated in the context of Cu-oxidesby mere analogy with manganites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Nanoscale Phase Separation in Colossal Magnetoresistance Materials: A Lesson for the Cuprates?|Elbio Dagotto,Jan Burgy,Adriana Moreo###
(872732, 872732)
 Inaddition, theoretical speculations are formulated in the context of Cu-oxidesby mere analogy with manganites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Nanoscale Phase Separation in Colossal Magnetoresistance Materials: A Lesson for the Cuprates?|Elbio Dagotto,Jan Burgy,Adriana Moreo###
(872864, 872864)
 This includes a tentative explanation of thespin-glass regime as a mixture of antiferromagnetic and superconductingislands, the rationalization of the pseudogap temperature T<missing VAR> as a Griffithstemperature where clusters start forming upon cooling, the prediction ofcolossal effects in cuprates, and the observation that quenched disorder maybe far more relevant in Cu-oxides than previously anticipated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Spin-Dependent Transport Through An Interacting Quantum Dot|Ping Zhang,Qi-Kun Xue,Yu-Peng Wang,X. C. Xie###
(873060, 873060)
 As a result, when theelectrodes are in parallel magnetic configuration, the linear conductance ischaracterized by two spin-resolved peaks.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co/Al/Co
###Suppression of superconductivity due to spin imbalance in Co/Al/Co single electron transistor|Jan Johansson,Mattias Urech,David Haviland,V. Korenivski###
(873483, 873487)
Suppression of superconductivity due to spin imbalance in Co/Al/Co single electron transistor.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[132.0, 100, '%', 3]

Co/AlO
###Suppression of superconductivity due to spin imbalance in Co/Al/Co single electron transistor|Jan Johansson,Mattias Urech,David Haviland,V. Korenivski###
(873629, 873632)
 Magnetoresistance of approximately 100% is measured inCo/AlOX<missing VAR>/Al/AlOX<missing VAR>/Co double tunnel junction spin valves at low bias,with the Al spacer in the superconducting state.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[10.0, 100, '%', 0]

Al/AlO
###Suppression of superconductivity due to spin imbalance in Co/Al/Co single electron transistor|Jan Johansson,Mattias Urech,David Haviland,V. Korenivski###
(873635, 873638)
 Magnetoresistance of approximately 100% is measured inCo/AlOX<missing VAR>/Al/AlOX<missing VAR>/Co double tunnel junction spin valves at low bias,with the Al spacer in the superconducting state.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[16.0, 100, '%', 0]

Co
###Suppression of superconductivity due to spin imbalance in Co/Al/Co single electron transistor|Jan Johansson,Mattias Urech,David Haviland,V. Korenivski###
(873641, 873641)
 Magnetoresistance of approximately 100% is measured inCo/AlOX<missing VAR>/Al/AlOX<missing VAR>/Co double tunnel junction spin valves at low bias,with the Al spacer in the superconducting state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 100, '%', 0]

Al
###Suppression of superconductivity due to spin imbalance in Co/Al/Co single electron transistor|Jan Johansson,Mattias Urech,David Haviland,V. Korenivski###
(873665, 873665)
 Magnetoresistance of approximately 100% is measured inCo/AlOX<missing VAR>/Al/AlOX<missing VAR>/Co double tunnel junction spin valves at low bias,with the Al spacer in the superconducting state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 100, '%', 0]

C
###Suppression of superconductivity due to spin imbalance in Co/Al/Co single electron transistor|Jan Johansson,Mattias Urech,David Haviland,V. Korenivski###
(873704, 873704)
 The effect is substantiallyreduced at high bias and temperatures above the T<missing VAR>C of the Al.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 100, '%', 1]

Al
###Suppression of superconductivity due to spin imbalance in Co/Al/Co single electron transistor|Jan Johansson,Mattias Urech,David Haviland,V. Korenivski###
(873710, 873710)
 The effect is substantiallyreduced at high bias and temperatures above the T<missing VAR>C of the Al.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 100, '%', 1]

Al
###Suppression of superconductivity due to spin imbalance in Co/Al/Co single electron transistor|Jan Johansson,Mattias Urech,David Haviland,V. Korenivski###
(873759, 873759)
 Theexperimental results are interpreted as due to spin imbalance of chargecarriers resulting in suppression of the superconducting gap of the Al island.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 100, '%', 2]

Gd
###Do we understand electron correlation effects in Gadolinium based intermetallic compounds?|E. V. Sampathkumaran,R. Mallik###
(873864, 873864)
 Recognising the difficulties in systematic understanding of the physicalcharacteristics of strongly correlated f<missing VAR>-electron systems, we considered itworthwhile to subject the so-called normal f<missing VAR>-electron systems like those ofGd to careful investigations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Gd
###Do we understand electron correlation effects in Gadolinium based intermetallic compounds?|E. V. Sampathkumaran,R. Mallik###
(873948, 873948)
 We find that the spin-disorder contribution toelectrical resistivity (rho) in the paramagnetic state, instead of remainingcontant, surprisingly increases with decreasing temperature (T) in theparamagnetic state in some of the Gd alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Do we understand electron correlation effects in Gadolinium based intermetallic compounds?|E. V. Sampathkumaran,R. Mallik###
(873953, 873953)
 In some cases, this excessresistance is so large that a distinct minimum in the plot of rho versus T<missing VAR>can be seen, mimicking the behaviour of Kondo lattices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Do we understand electron correlation effects in Gadolinium based intermetallic compounds?|E. V. Sampathkumaran,R. Mallik###
(874056, 874056)
 In addition, these alloys are found to exhibitheavy-fermion-like heat-capacity behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Gd
###Do we understand electron correlation effects in Gadolinium based intermetallic compounds?|E. V. Sampathkumaran,R. Mallik###
(874112, 874112)
 These unusual findings implyhither-to-unexplored electron correlation effects even in Gd-based alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CeCoIn5
###Field-Induced Quantum Critical Point in CeCoIn5|Johnpierre Paglione,M. A. Tanatar,D. G. Hawthorn,Etienne Boaknin,R. W. Hill,F. Ronning,M. Sutherland,Louis Taillefer,C. Petrovic,P. C. Canfield###
(874139, 874142)
Field-Induced Quantum Critical Point in CeCoIn5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7142857142857143,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 25, 'mK', 1],[56.0, 16, 'T', 1],[332.0, 1, 'K', 5]

CeCoIn5
###Field-Induced Quantum Critical Point in CeCoIn5|Johnpierre Paglione,M. A. Tanatar,D. G. Hawthorn,Etienne Boaknin,R. W. Hill,F. Ronning,M. Sutherland,Louis Taillefer,C. Petrovic,P. C. Canfield###
(874159, 874162)
 The resistivity of the heavy-fermion superconductor CeCoIn5 was measured as afunction of temperature, down to 25 mK and in magnetic fields of up to 16 Tapplied perpendicular to the basal plane.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7142857142857143,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 25, 'mK', 0],[36.0, 16, 'T', 0],[312.0, 1, 'K', 4]

P
###Field-Induced Quantum Critical Point in CeCoIn5|Johnpierre Paglione,M. A. Tanatar,D. G. Hawthorn,Etienne Boaknin,R. W. Hill,F. Ronning,M. Sutherland,Louis Taillefer,C. Petrovic,P. C. Canfield###
(874345, 874345)
 This is evidence for a field-induced quantum critical point(Q<missing VAR>CP), occuring at a critical field which coincides, within experimentalaccuracy, with the superconducting critical field Hc<missing VAR>2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 25, 'mK', 3],[147.0, 16, 'T', 3],[129.0, 1, 'K', 1]

H
###Field-Induced Quantum Critical Point in CeCoIn5|Johnpierre Paglione,M. A. Tanatar,D. G. Hawthorn,Etienne Boaknin,R. W. Hill,F. Ronning,M. Sutherland,Louis Taillefer,C. Petrovic,P. C. Canfield###
(874382, 874382)
 This is evidence for a field-induced quantum critical point(Q<missing VAR>CP), occuring at a critical field which coincides, within experimentalaccuracy, with the superconducting critical field Hc<missing VAR>2.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[199.0, 25, 'mK', 3],[184.0, 16, 'T', 3],[92.0, 1, 'K', 1]

CP
###Field-Induced Quantum Critical Point in CeCoIn5|Johnpierre Paglione,M. A. Tanatar,D. G. Hawthorn,Etienne Boaknin,R. W. Hill,F. Ronning,M. Sutherland,Louis Taillefer,C. Petrovic,P. C. Canfield###
(874405, 874406)
 We discuss the relationof this field-tuned Q<missing VAR>CP to a change in the magnetic state, seen as a change inmagnetoresistance from positive to negative, at a crossover line that has acommon border with the superconducting region below  1 K.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[222.0, 25, 'mK', 4],[207.0, 16, 'T', 4],[68.0, 1, 'K', 0]

C
###Dynamical mean field theory for transition temperature and optics of CMR manganites|B. Michaelis,A. J. Millis###
(874505, 874505)
Dynamical mean field theory for transition temperature and optics of CMR manganites.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[201.0, 1.5, 'eV', 4]

C
###Dynamical mean field theory for transition temperature and optics of CMR manganites|B. Michaelis,A. J. Millis###
(874605, 874605)
 A tight binding parametrization of local spin density functional band theoryis combined with a dynamical mean field treatment of correlations to obtain atheory of the magnetic transition temperature, optical conductivity and T<missing VAR>0spinwave stiffness of a minimal model for the pseudocubic metallic CMRmanganites such a La1-XSrx<missing VAR>MnO3.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 1.5, 'eV', 3]

La1-XSr
###Dynamical mean field theory for transition temperature and optics of CMR manganites|B. Michaelis,A. J. Millis###
(874616, 874620)
 A tight binding parametrization of local spin density functional band theoryis combined with a dynamical mean field treatment of correlations to obtain atheory of the magnetic transition temperature, optical conductivity and T<missing VAR>0spinwave stiffness of a minimal model for the pseudocubic metallic CMRmanganites such a La1-XSrx<missing VAR>MnO3.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[86.0, 1.5, 'eV', 3]

MnO3
###Dynamical mean field theory for transition temperature and optics of CMR manganites|B. Michaelis,A. J. Millis###
(874622, 874624)
 A tight binding parametrization of local spin density functional band theoryis combined with a dynamical mean field treatment of correlations to obtain atheory of the magnetic transition temperature, optical conductivity and T<missing VAR>0spinwave stiffness of a minimal model for the pseudocubic metallic CMRmanganites such a La1-XSrx<missing VAR>MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 1.5, 'eV', 3]

B61
###Dynamical mean field theory for transition temperature and optics of CMR manganites|B. Michaelis,A. J. Millis###
(874663, 874664)
 textbfB61 10738-49(2000)) are in error, that in fact the materials are characterized by Hundscoupling J<missing VAR>approx 1.5eV, and that magnetic-order driven changes in thekinetic energy may not be the cause of the observed colossal magnetoresistiveand multiphase behavior in the manganites, raising questions about our presentunderstanding of these materials.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 1.5, 'eV', 0]

Ge/Ge1-xSi
###Localization and electron-electron interaction effects in magnetoresistance of p-type Ge/Ge_{1-x}Si_x heterostructures|Yu. G. Arapov,G. I. Harus,V. N. Neverov,A. T. Lonchakov,N. G. Shelushinina,M. V. Yakunin###
(874814, 874820)
Localization and electron-electron interaction effects in magnetoresistance of p<missing VAR>-type Ge/Ge1-xSix<missing VAR> heterostructures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[216.0, 0.2, 'T', 3],[294.0, 0, 'allows', 5],[330.0, 0, 'resulting', 5]

La
###Kondo effect in underdoped n-type superconductors|Tsuyoshi Sekitani,Michio Naito,Noboru Miura###
(875255, 875255)
 We present high-field magnetotransport properties of high-qualitysingle-crystalline thin films of heavily underdoped nonsuperconducting(La,Ce)2CuO4, (Pr,Ce)2CuO4, and (Nd,Ce)2CuO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ce
###Kondo effect in underdoped n-type superconductors|Tsuyoshi Sekitani,Michio Naito,Noboru Miura###
(875257, 875257)
 We present high-field magnetotransport properties of high-qualitysingle-crystalline thin films of heavily underdoped nonsuperconducting(La,Ce)2CuO4, (Pr,Ce)2CuO4, and (Nd,Ce)2CuO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CuO4
###Kondo effect in underdoped n-type superconductors|Tsuyoshi Sekitani,Michio Naito,Noboru Miura###
(875260, 875262)
 We present high-field magnetotransport properties of high-qualitysingle-crystalline thin films of heavily underdoped nonsuperconducting(La,Ce)2CuO4, (Pr,Ce)2CuO4, and (Nd,Ce)2CuO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pr
###Kondo effect in underdoped n-type superconductors|Tsuyoshi Sekitani,Michio Naito,Noboru Miura###
(875266, 875266)
 We present high-field magnetotransport properties of high-qualitysingle-crystalline thin films of heavily underdoped nonsuperconducting(La,Ce)2CuO4, (Pr,Ce)2CuO4, and (Nd,Ce)2CuO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ce
###Kondo effect in underdoped n-type superconductors|Tsuyoshi Sekitani,Michio Naito,Noboru Miura###
(875268, 875268)
 We present high-field magnetotransport properties of high-qualitysingle-crystalline thin films of heavily underdoped nonsuperconducting(La,Ce)2CuO4, (Pr,Ce)2CuO4, and (Nd,Ce)2CuO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CuO4
###Kondo effect in underdoped n-type superconductors|Tsuyoshi Sekitani,Michio Naito,Noboru Miura###
(875271, 875273)
 We present high-field magnetotransport properties of high-qualitysingle-crystalline thin films of heavily underdoped nonsuperconducting(La,Ce)2CuO4, (Pr,Ce)2CuO4, and (Nd,Ce)2CuO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nd
###Kondo effect in underdoped n-type superconductors|Tsuyoshi Sekitani,Michio Naito,Noboru Miura###
(875279, 875279)
 We present high-field magnetotransport properties of high-qualitysingle-crystalline thin films of heavily underdoped nonsuperconducting(La,Ce)2CuO4, (Pr,Ce)2CuO4, and (Nd,Ce)2CuO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ce
###Kondo effect in underdoped n-type superconductors|Tsuyoshi Sekitani,Michio Naito,Noboru Miura###
(875281, 875281)
 We present high-field magnetotransport properties of high-qualitysingle-crystalline thin films of heavily underdoped nonsuperconducting(La,Ce)2CuO4, (Pr,Ce)2CuO4, and (Nd,Ce)2CuO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CuO4
###Kondo effect in underdoped n-type superconductors|Tsuyoshi Sekitani,Michio Naito,Noboru Miura###
(875284, 875286)
 We present high-field magnetotransport properties of high-qualitysingle-crystalline thin films of heavily underdoped nonsuperconducting(La,Ce)2CuO4, (Pr,Ce)2CuO4, and (Nd,Ce)2CuO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Kondo effect in underdoped n-type superconductors|Tsuyoshi Sekitani,Michio Naito,Noboru Miura###
(875404, 875404)
 Thisnegative magnetoresistance has a log B dependence, and its anisotropy shows nonsimple behavior.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu2
###Kondo effect in underdoped n-type superconductors|Tsuyoshi Sekitani,Michio Naito,Noboru Miura###
(875492, 875493)
 The Kondo scatters are identifiedas Cu2 spins in the CuO2 planes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CuO2
###Kondo effect in underdoped n-type superconductors|Tsuyoshi Sekitani,Michio Naito,Noboru Miura###
(875501, 875503)
 The Kondo scatters are identifiedas Cu2 spins in the CuO2 planes.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Mixed-phase description of colossal magnetoresistive manganites|Alexander Weiße,Jan Loos,Holger Fehske###
(875531, 875531)
 In view of recent experiments, indicating the spatial coexistence ofconducting and insulating regions in the ferromagnetic metallic phase of dopedmanganites, we propose a refined mixed-phase description.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Mixed-phase description of colossal magnetoresistive manganites|Alexander Weiße,Jan Loos,Holger Fehske###
(875716, 875716)
 In addition,modelling the resistivity of the mixed, percolative phase by a random resistornetwork, we obtain a pronounced negative magnetoresistance in the vicinity ofthe Curie temperature T<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Mixed-phase description of colossal magnetoresistive manganites|Alexander Weiße,Jan Loos,Holger Fehske###
(875779, 875779)
 In addition,modelling the resistivity of the mixed, percolative phase by a random resistornetwork, we obtain a pronounced negative magnetoresistance in the vicinity ofthe Curie temperature T<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(SOI)
###Magnetotransport in a two-dimensional electron gas in the presence of spin-orbit interaction|X. F. Wang,P. Vasilopoulos###
(875878, 875882)
 We evaluate the transport coefficients of a two-dimensional electron gas(2DEG) in the presence of a perpendicular magnetic field and of the spin-orbitinteraction (SOI) described only by the Rashba term.
Featurization successful!
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SOI
###Magnetotransport in a two-dimensional electron gas in the presence of spin-orbit interaction|X. F. Wang,P. Vasilopoulos###
(875899, 875901)
 The SOI mixes the spin-upand spin-down states of neighboring Landau levels into two new, unequallyspaced energy branches.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SOI
###Magnetotransport in a two-dimensional electron gas in the presence of spin-orbit interaction|X. F. Wang,P. Vasilopoulos###
(876058, 876060)
  A strong SOI results in a splitting of the magnetoresistance peaks and adoubling of the number of the Hall plateaus.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SOI
###Magnetotransport in a two-dimensional electron gas in the presence of spin-orbit interaction|X. F. Wang,P. Vasilopoulos###
(876129, 876131)
 The peak value in derivative ofthe Hall resistivity reflects the strength of the SOI.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Simulations of a classical spin system with competing superexchange and double-exchange interactions|Shan-Ho Tsai,D. P. Landau###
(876412, 876412)
 Spin-dynamics simulationshave been used to compute the time- and space-displaced spin-spin correlationfunctions, and their Fourier transforms, which yield the dynamic structurefactor S(q<missing VAR>,omega) for this system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrFe1-x
###Anomalous Hall Effect and Magnetoresistance of SrFe1-xCoxO3-d|Takahiko Ido,Yukio Yasui,Masatoshi Sato###
(876472, 876476)
Anomalous Hall Effect and Magnetoresistance of SrFe1-xCoxO3-d.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

O3-d
###Anomalous Hall Effect and Magnetoresistance of SrFe1-xCoxO3-d|Takahiko Ido,Yukio Yasui,Masatoshi Sato###
(876478, 876481)
Anomalous Hall Effect and Magnetoresistance of SrFe1-xCoxO3-d.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

SrFe1-x
###Anomalous Hall Effect and Magnetoresistance of SrFe1-xCoxO3-d|Takahiko Ido,Yukio Yasui,Masatoshi Sato###
(876500, 876504)
 Transport and magnetic studies on polycrystalline samples of SrFe1-xCoxO3-dhave been carried out to investigate the relationship between the magneticstructure and the anomalous Hall resistivity r<missing VAR>H.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

O3-d
###Anomalous Hall Effect and Magnetoresistance of SrFe1-xCoxO3-d|Takahiko Ido,Yukio Yasui,Masatoshi Sato###
(876506, 876509)
 Transport and magnetic studies on polycrystalline samples of SrFe1-xCoxO3-dhave been carried out to investigate the relationship between the magneticstructure and the anomalous Hall resistivity r<missing VAR>H.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

H
###Anomalous Hall Effect and Magnetoresistance of SrFe1-xCoxO3-d|Takahiko Ido,Yukio Yasui,Masatoshi Sato###
(876548, 876548)
 Transport and magnetic studies on polycrystalline samples of SrFe1-xCoxO3-dhave been carried out to investigate the relationship between the magneticstructure and the anomalous Hall resistivity r<missing VAR>H.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Anomalous Hall Effect and Magnetoresistance of SrFe1-xCoxO3-d|Takahiko Ido,Yukio Yasui,Masatoshi Sato###
(876666, 876666)
 The hysteretic behavior of themagnetization observed in the measurements with varying temperature T<missing VAR> up andthen down after zero field cooling indicates that the system has the reentrantspin-glass phase, which is supported by the increasing width of the magneticreflections observed by neutron diffraction with decreasing T<missing VAR> below the Curietemperature T<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Anomalous Hall Effect and Magnetoresistance of SrFe1-xCoxO3-d|Takahiko Ido,Yukio Yasui,Masatoshi Sato###
(876684, 876684)
 Detailed analyses of the observed Hall resistivity r<missing VAR>H indicatethat the anomalous Hall coefficient exhibits unusual behavior in the reentrantspin-glass phase.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(H)
###Anomalous Hall Effect and Magnetoresistance of SrFe1-xCoxO3-d|Takahiko Ido,Yukio Yasui,Masatoshi Sato###
(876725, 876727)
 The magnetic field (H)- and T<missing VAR>-dependence of themagnetoresistance of the present system can be understood by a spin dependenttunneling model.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###X-Ray Study of the Density Wave Instability of alpha-(BEDT-TTF)2MHg(SCN)4 with M=K and Rb|P. Foury-Leylekian,S. Ravy,J. -P. Pouget,H. Muller###
(876800, 876800)
X<missing VAR>-Ray Study of the Density Wave Instability of alpha-(BEDT-TTF)2M<missing VAR>Hg(SCN)4 with M<missing VAR>K and Rb.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###X-Ray Study of the Density Wave Instability of alpha-(BEDT-TTF)2MHg(SCN)4 with M=K and Rb|P. Foury-Leylekian,S. Ravy,J. -P. Pouget,H. Muller###
(876807, 876807)
X<missing VAR>-Ray Study of the Density Wave Instability of alpha-(BEDT-TTF)2M<missing VAR>Hg(SCN)4 with M<missing VAR>K and Rb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Hg(SCN)4
###X-Ray Study of the Density Wave Instability of alpha-(BEDT-TTF)2MHg(SCN)4 with M=K and Rb|P. Foury-Leylekian,S. Ravy,J. -P. Pouget,H. Muller###
(876811, 876817)
X<missing VAR>-Ray Study of the Density Wave Instability of alpha-(BEDT-TTF)2M<missing VAR>Hg(SCN)4 with M<missing VAR>K and Rb.
Featurization terminated normally.
0,0,0,0,0,0.3076923076923077,0.3076923076923077,0,0,0,0,0,0,0,0,0.3076923076923077,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###X-Ray Study of the Density Wave Instability of alpha-(BEDT-TTF)2MHg(SCN)4 with M=K and Rb|P. Foury-Leylekian,S. Ravy,J. -P. Pouget,H. Muller###
(876822, 876822)
X<missing VAR>-Ray Study of the Density Wave Instability of alpha-(BEDT-TTF)2M<missing VAR>Hg(SCN)4 with M<missing VAR>K and Rb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Rb
###X-Ray Study of the Density Wave Instability of alpha-(BEDT-TTF)2MHg(SCN)4 with M=K and Rb|P. Foury-Leylekian,S. Ravy,J. -P. Pouget,H. Muller###
(876826, 876826)
X<missing VAR>-Ray Study of the Density Wave Instability of alpha-(BEDT-TTF)2M<missing VAR>Hg(SCN)4 with M<missing VAR>K and Rb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###X-Ray Study of the Density Wave Instability of alpha-(BEDT-TTF)2MHg(SCN)4 with M=K and Rb|P. Foury-Leylekian,S. Ravy,J. -P. Pouget,H. Muller###
(876858, 876858)
 We present an X<missing VAR>-ray diffraction study of the quasi-2D<missing VAR> conductorsa-(BEDTTTF)2M<missing VAR>Hg(SCN), with M<missing VAR>K and Rb.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###X-Ray Study of the Density Wave Instability of alpha-(BEDT-TTF)2MHg(SCN)4 with M=K and Rb|P. Foury-Leylekian,S. Ravy,J. -P. Pouget,H. Muller###
(876864, 876864)
 We present an X<missing VAR>-ray diffraction study of the quasi-2D<missing VAR> conductorsa-(BEDTTTF)2M<missing VAR>Hg(SCN), with M<missing VAR>K and Rb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Hg(SCN)
###X-Ray Study of the Density Wave Instability of alpha-(BEDT-TTF)2MHg(SCN)4 with M=K and Rb|P. Foury-Leylekian,S. Ravy,J. -P. Pouget,H. Muller###
(876868, 876873)
 We present an X<missing VAR>-ray diffraction study of the quasi-2D<missing VAR> conductorsa-(BEDTTTF)2M<missing VAR>Hg(SCN), with M<missing VAR>K and Rb.
Featurization terminated normally.
0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###X-Ray Study of the Density Wave Instability of alpha-(BEDT-TTF)2MHg(SCN)4 with M=K and Rb|P. Foury-Leylekian,S. Ravy,J. -P. Pouget,H. Muller###
(876879, 876879)
 We present an X<missing VAR>-ray diffraction study of the quasi-2D<missing VAR> conductorsa-(BEDTTTF)2M<missing VAR>Hg(SCN), with M<missing VAR>K and Rb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Rb
###X-Ray Study of the Density Wave Instability of alpha-(BEDT-TTF)2MHg(SCN)4 with M=K and Rb|P. Foury-Leylekian,S. Ravy,J. -P. Pouget,H. Muller###
(876883, 876883)
 We present an X<missing VAR>-ray diffraction study of the quasi-2D<missing VAR> conductorsa-(BEDTTTF)2M<missing VAR>Hg(SCN), with M<missing VAR>K and Rb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W8
###X-Ray Study of the Density Wave Instability of alpha-(BEDT-TTF)2MHg(SCN)4 with M=K and Rb|P. Foury-Leylekian,S. Ravy,J. -P. Pouget,H. Muller###
(876911, 876912)
 They exhibit a phase transition of thedensity wave type at TDW8-10K and 12-13K respectively, evidenced bymagnetoresistivity, specific heat, NMR and Hall constant measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###X-Ray Study of the Density Wave Instability of alpha-(BEDT-TTF)2MHg(SCN)4 with M=K and Rb|P. Foury-Leylekian,S. Ravy,J. -P. Pouget,H. Muller###
(876915, 876915)
 They exhibit a phase transition of thedensity wave type at TDW8-10K and 12-13K respectively, evidenced bymagnetoresistivity, specific heat, NMR and Hall constant measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###X-Ray Study of the Density Wave Instability of alpha-(BEDT-TTF)2MHg(SCN)4 with M=K and Rb|P. Foury-Leylekian,S. Ravy,J. -P. Pouget,H. Muller###
(876922, 876922)
 They exhibit a phase transition of thedensity wave type at TDW8-10K and 12-13K respectively, evidenced bymagnetoresistivity, specific heat, NMR and Hall constant measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###X-Ray Study of the Density Wave Instability of alpha-(BEDT-TTF)2MHg(SCN)4 with M=K and Rb|P. Foury-Leylekian,S. Ravy,J. -P. Pouget,H. Muller###
(876940, 876940)
 They exhibit a phase transition of thedensity wave type at TDW8-10K and 12-13K respectively, evidenced bymagnetoresistivity, specific heat, NMR and Hall constant measurements.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###X-Ray Study of the Density Wave Instability of alpha-(BEDT-TTF)2MHg(SCN)4 with M=K and Rb|P. Foury-Leylekian,S. Ravy,J. -P. Pouget,H. Muller###
(877034, 877034)
For some of the compounds studied, the intensity of the satellite reflectionsstrongly increases below TDW.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(FS)
###X-Ray Study of the Density Wave Instability of alpha-(BEDT-TTF)2MHg(SCN)4 with M=K and Rb|P. Foury-Leylekian,S. Ravy,J. -P. Pouget,H. Muller###
(877045, 877048)
 According to Fermi surface (FS) calculations, thewave vector of the structural modulation achieves a quite good nesting of theglobal FS.
Featurization successful!
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FS
###X-Ray Study of the Density Wave Instability of alpha-(BEDT-TTF)2MHg(SCN)4 with M=K and Rb|P. Foury-Leylekian,S. Ravy,J. -P. Pouget,H. Muller###
(877085, 877086)
 According to Fermi surface (FS) calculations, thewave vector of the structural modulation achieves a quite good nesting of theglobal FS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

III
###Single-Band Model for Diluted Magnetic Semiconductors: Dynamical and Transport Properties and Relevance of Clustered States|G. Alvarez,E. Dagotto###
(877204, 877206)
 Dynamical and transport properties of a simple single-band spin-fermionlattice model for (III,Mn)V diluted magnetic semiconductors (DMS) is herediscussed using Monte Carlo simulations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 89, ',', 5]

Mn
###Single-Band Model for Diluted Magnetic Semiconductors: Dynamical and Transport Properties and Relevance of Clustered States|G. Alvarez,E. Dagotto###
(877208, 877208)
 Dynamical and transport properties of a simple single-band spin-fermionlattice model for (III,Mn)V diluted magnetic semiconductors (DMS) is herediscussed using Monte Carlo simulations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 89, ',', 5]

V
###Single-Band Model for Diluted Magnetic Semiconductors: Dynamical and Transport Properties and Relevance of Clustered States|G. Alvarez,E. Dagotto###
(877210, 877210)
 Dynamical and transport properties of a simple single-band spin-fermionlattice model for (III,Mn)V diluted magnetic semiconductors (DMS) is herediscussed using Monte Carlo simulations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 89, ',', 5]

S
###Single-Band Model for Diluted Magnetic Semiconductors: Dynamical and Transport Properties and Relevance of Clustered States|G. Alvarez,E. Dagotto###
(877221, 877221)
 Dynamical and transport properties of a simple single-band spin-fermionlattice model for (III,Mn)V diluted magnetic semiconductors (DMS) is herediscussed using Monte Carlo simulations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 89, ',', 5]

Mn
###Single-Band Model for Diluted Magnetic Semiconductors: Dynamical and Transport Properties and Relevance of Clustered States|G. Alvarez,E. Dagotto###
(877362, 877362)
 The present results support the view thatthe relevant regime of J/t (standard notation) is that of intermediatecoupling, where carriers are only partially trapped near Mn spins, and locallyordered regions (clusters) are present above the Curie temperature T<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 89, ',', 1]

C
###Single-Band Model for Diluted Magnetic Semiconductors: Dynamical and Transport Properties and Relevance of Clustered States|G. Alvarez,E. Dagotto###
(877393, 877393)
 The present results support the view thatthe relevant regime of J/t (standard notation) is that of intermediatecoupling, where carriers are only partially trapped near Mn spins, and locallyordered regions (clusters) are present above the Curie temperature T<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 89, ',', 1]

C
###Single-Band Model for Diluted Magnetic Semiconductors: Dynamical and Transport Properties and Relevance of Clustered States|G. Alvarez,E. Dagotto###
(877443, 877443)
 temperature, thatshows a soft metal to insulator transition near T<missing VAR>C, as well on the analysis ofthe density-of-states and optical conductivity.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[170.0, 89, ',', 3]

In
###Single-Band Model for Diluted Magnetic Semiconductors: Dynamical and Transport Properties and Relevance of Clustered States|G. Alvarez,E. Dagotto###
(877474, 877474)
 In addition, in the clusteredregime a large magnetoresistance is observed in simulations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[201.0, 89, ',', 4]

S
###Single-Band Model for Diluted Magnetic Semiconductors: Dynamical and Transport Properties and Relevance of Clustered States|G. Alvarez,E. Dagotto###
(877512, 877512)
 Formal analogiesbetween DMS and manganites are also discussed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[239.0, 89, ',', 5]

Co
###Magnetoresistance of atomic-sized contacts: an ab-initio study|Alexei Bagrets,Nikos Papanikolaou,Ingrid Mertig###
(877612, 877612)
 We consider three-atom chains formed from Co, Cu, Si, and Alatoms suspended between semi-infinite Co leads.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 50, '%', 2]

Cu
###Magnetoresistance of atomic-sized contacts: an ab-initio study|Alexei Bagrets,Nikos Papanikolaou,Ingrid Mertig###
(877615, 877615)
 We consider three-atom chains formed from Co, Cu, Si, and Alatoms suspended between semi-infinite Co leads.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 50, '%', 2]

Si
###Magnetoresistance of atomic-sized contacts: an ab-initio study|Alexei Bagrets,Nikos Papanikolaou,Ingrid Mertig###
(877618, 877618)
 We consider three-atom chains formed from Co, Cu, Si, and Alatoms suspended between semi-infinite Co leads.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 50, '%', 2]

Al
###Magnetoresistance of atomic-sized contacts: an ab-initio study|Alexei Bagrets,Nikos Papanikolaou,Ingrid Mertig###
(877623, 877623)
 We consider three-atom chains formed from Co, Cu, Si, and Alatoms suspended between semi-infinite Co leads.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 50, '%', 2]

Co
###Magnetoresistance of atomic-sized contacts: an ab-initio study|Alexei Bagrets,Nikos Papanikolaou,Ingrid Mertig###
(877636, 877636)
 We consider three-atom chains formed from Co, Cu, Si, and Alatoms suspended between semi-infinite Co leads.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 50, '%', 2]

Co
###Magnetoresistance of atomic-sized contacts: an ab-initio study|Alexei Bagrets,Nikos Papanikolaou,Ingrid Mertig###
(877723, 877723)
 The conductance through the constrictions reflects thespin-splitting of the Co bands and causes high MR ratios, up to 50%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 50, '%', 0]

CeTe1.82
###Pressure effect on magnetism in CeTe$_{1.82}$|M. H. Jung,A. Alsmadi,H. C. Kim,J. Kamarad,T. Takabatake###
(878201, 878203)
Pressure effect on magnetism in CeTe1.82.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6453900709219857,0,0,0,0,0,0.35460992907801414,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 170, 'K', 2],[132.0, 6, 'K', 3],[157.0, 4.3, 'K', 3]

CeTe1.82
###Pressure effect on magnetism in CeTe$_{1.82}$|M. H. Jung,A. Alsmadi,H. C. Kim,J. Kamarad,T. Takabatake###
(878235, 878237)
 We report the normal-state transport and magnetic properties of apressure-induced superconductor CeTe1.82.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6453900709219857,0,0,0,0,0,0.35460992907801414,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 170, 'K', 1],[98.0, 6, 'K', 2],[123.0, 4.3, 'K', 2]

K
###Pressure effect on magnetism in CeTe$_{1.82}$|M. H. Jung,A. Alsmadi,H. C. Kim,J. Kamarad,T. Takabatake###
(878273, 878273)
 We found that the appliedpressure is required to increase the Kondo temperature scale (T<missing VAR>rm Ksim 170 K), associated with the two-dimensional motion of the carriersconfined within the Te plane.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 170, 'K', 0],[62.0, 6, 'K', 1],[87.0, 4.3, 'K', 1]

Te
###Pressure effect on magnetism in CeTe$_{1.82}$|M. H. Jung,A. Alsmadi,H. C. Kim,J. Kamarad,T. Takabatake###
(878306, 878306)
 We found that the appliedpressure is required to increase the Kondo temperature scale (T<missing VAR>rm Ksim 170 K), associated with the two-dimensional motion of the carriersconfined within the Te plane.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 170, 'K', 0],[29.0, 6, 'K', 1],[54.0, 4.3, 'K', 1]

S
###Pressure effect on magnetism in CeTe$_{1.82}$|M. H. Jung,A. Alsmadi,H. C. Kim,J. Kamarad,T. Takabatake###
(878330, 878330)
 Both the short-range ferromagnetic orderingtemperature (T<missing VAR>rm SR<missing VAR>F sim 6 K) and the long-range antiferromagnetictransition temperature (T<missing VAR>rm N sim 4.3 K) are slightly increased withpressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 170, 'K', 1],[5.0, 6, 'K', 0],[30.0, 4.3, 'K', 0]

F
###Pressure effect on magnetism in CeTe$_{1.82}$|M. H. Jung,A. Alsmadi,H. C. Kim,J. Kamarad,T. Takabatake###
(878332, 878332)
 Both the short-range ferromagnetic orderingtemperature (T<missing VAR>rm SR<missing VAR>F sim 6 K) and the long-range antiferromagnetictransition temperature (T<missing VAR>rm N sim 4.3 K) are slightly increased withpressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 170, 'K', 1],[3.0, 6, 'K', 0],[28.0, 4.3, 'K', 0]

N
###Pressure effect on magnetism in CeTe$_{1.82}$|M. H. Jung,A. Alsmadi,H. C. Kim,J. Kamarad,T. Takabatake###
(878357, 878357)
 Both the short-range ferromagnetic orderingtemperature (T<missing VAR>rm SR<missing VAR>F sim 6 K) and the long-range antiferromagnetictransition temperature (T<missing VAR>rm N sim 4.3 K) are slightly increased withpressure.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 170, 'K', 1],[22.0, 6, 'K', 0],[3.0, 4.3, 'K', 0]

S
###Pressure effect on magnetism in CeTe$_{1.82}$|M. H. Jung,A. Alsmadi,H. C. Kim,J. Kamarad,T. Takabatake###
(878474, 878474)
 We also found that the field effecton the transport under pressure is analogous to that at ambient pressure, wherea large magnetoresistance is observed in the vicinity of T<missing VAR>rm SR<missing VAR>F.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[197.0, 170, 'K', 3],[139.0, 6, 'K', 2],[114.0, 4.3, 'K', 2]

F
###Pressure effect on magnetism in CeTe$_{1.82}$|M. H. Jung,A. Alsmadi,H. C. Kim,J. Kamarad,T. Takabatake###
(878476, 878476)
 We also found that the field effecton the transport under pressure is analogous to that at ambient pressure, wherea large magnetoresistance is observed in the vicinity of T<missing VAR>rm SR<missing VAR>F.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[199.0, 170, 'K', 3],[141.0, 6, 'K', 2],[116.0, 4.3, 'K', 2]

S
###Tunnel magnetoresistance in double spin filter junctions|Alireza Saffarzadeh###
(878883, 878883)
 We consider a new type of magnetic tunnel junction, which consists of twoferromagnetic tunnel barriers acting as spin filters (SFs), separated by anonmagnetic metal (NM) layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 99, '%', 3]

N
###Tunnel magnetoresistance in double spin filter junctions|Alireza Saffarzadeh###
(878900, 878900)
 We consider a new type of magnetic tunnel junction, which consists of twoferromagnetic tunnel barriers acting as spin filters (SFs), separated by anonmagnetic metal (NM) layer.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 99, '%', 3]

N
###Tunnel magnetoresistance in double spin filter junctions|Alireza Saffarzadeh###
(878960, 878960)
 Using the transfer matrix method and thefree-electron approximation, the dependence of the tunnel magnetoresistance(TMR) on the thickness of the central NM<missing VAR> layer, bias voltage and temperature inthe double SF junction are studied theoretically.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 99, '%', 2]

SF
###Tunnel magnetoresistance in double spin filter junctions|Alireza Saffarzadeh###
(878981, 878982)
 Using the transfer matrix method and thefree-electron approximation, the dependence of the tunnel magnetoresistance(TMR) on the thickness of the central NM<missing VAR> layer, bias voltage and temperature inthe double SF junction are studied theoretically.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 99, '%', 2]

N
###Tunnel magnetoresistance in double spin filter junctions|Alireza Saffarzadeh###
(879083, 879083)
 By anappropriate choice of the thickness of the central NM<missing VAR> layer, the degree of spinpolarization in this structure will be higher than that of the single SFjunctions.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 99, '%', 1]

SF
###Tunnel magnetoresistance in double spin filter junctions|Alireza Saffarzadeh###
(879122, 879123)
 By anappropriate choice of the thickness of the central NM<missing VAR> layer, the degree of spinpolarization in this structure will be higher than that of the single SFjunctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 99, '%', 1]

La0.5Sr0.5CoO3
###Giant radio-frequency magnetoabsorption effect in the cobaltite ceramic La_{0.5}Sr_{0.5}CoO_3|B. I. Belevtsev,A. Ya. Kirichenko,N. T. Cherpak,G. V. Golubnichaya,I. G. Maximchuk,A. B. Beznosov,V. B. Krasovitsky,P. P. Pal-Val,I. N. Chukanova###
(879181, 879187)
Giant radio-frequency magnetoabsorption effect in the cobaltite ceramic La0.5Sr0.5CoO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 1.33, 'MHz', 1],[83.0, 250, 'K', 2],[147.0, 2.1, 'kOe', 4]

C
###Giant radio-frequency magnetoabsorption effect in the cobaltite ceramic La_{0.5}Sr_{0.5}CoO_3|B. I. Belevtsev,A. Ya. Kirichenko,N. T. Cherpak,G. V. Golubnichaya,I. G. Maximchuk,A. B. Beznosov,V. B. Krasovitsky,P. P. Pal-Val,I. N. Chukanova###
(879193, 879193)
 The D<missing VAR>C transport properties of and the radio-frequency (R<missing VAR>F) wave absorption(at 1.33 MHz) in a ceramic sample of La0.5Sr0.5CoO3-delta aremeasured.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 1.33, 'MHz', 0],[77.0, 250, 'K', 1],[141.0, 2.1, 'kOe', 3]

F
###Giant radio-frequency magnetoabsorption effect in the cobaltite ceramic La_{0.5}Sr_{0.5}CoO_3|B. I. Belevtsev,A. Ya. Kirichenko,N. T. Cherpak,G. V. Golubnichaya,I. G. Maximchuk,A. B. Beznosov,V. B. Krasovitsky,P. P. Pal-Val,I. N. Chukanova###
(879211, 879211)
 The D<missing VAR>C transport properties of and the radio-frequency (R<missing VAR>F) wave absorption(at 1.33 MHz) in a ceramic sample of La0.5Sr0.5CoO3-delta aremeasured.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 1.33, 'MHz', 0],[59.0, 250, 'K', 1],[123.0, 2.1, 'kOe', 3]

La0.5Sr0.5CoO3
###Giant radio-frequency magnetoabsorption effect in the cobaltite ceramic La_{0.5}Sr_{0.5}CoO_3|B. I. Belevtsev,A. Ya. Kirichenko,N. T. Cherpak,G. V. Golubnichaya,I. G. Maximchuk,A. B. Beznosov,V. B. Krasovitsky,P. P. Pal-Val,I. N. Chukanova###
(879234, 879240)
 The D<missing VAR>C transport properties of and the radio-frequency (R<missing VAR>F) wave absorption(at 1.33 MHz) in a ceramic sample of La0.5Sr0.5CoO3-delta aremeasured.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 1.33, 'MHz', 0],[30.0, 250, 'K', 1],[94.0, 2.1, 'kOe', 3]

In
###Giant radio-frequency magnetoabsorption effect in the cobaltite ceramic La_{0.5}Sr_{0.5}CoO_3|B. I. Belevtsev,A. Ya. Kirichenko,N. T. Cherpak,G. V. Golubnichaya,I. G. Maximchuk,A. B. Beznosov,V. B. Krasovitsky,P. P. Pal-Val,I. N. Chukanova###
(879289, 879289)
 In the vicinity of Tc, theabsolute value of the magnetoabsorption is about 38 % in the rather lowmagnetic field 2.1 kOe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 1.33, 'MHz', 3],[19.0, 250, 'K', 2],[45.0, 2.1, 'kOe', 0]

C
###Giant radio-frequency magnetoabsorption effect in the cobaltite ceramic La_{0.5}Sr_{0.5}CoO_3|B. I. Belevtsev,A. Ya. Kirichenko,N. T. Cherpak,G. V. Golubnichaya,I. G. Maximchuk,A. B. Beznosov,V. B. Krasovitsky,P. P. Pal-Val,I. N. Chukanova###
(879350, 879350)
 This differs drastically from the measured D<missing VAR>Cmagnetoresistance (MR) delta (H) [R<missing VAR>(0)-R<missing VAR>(H)]/R<missing VAR>(0) which is a mere 0.26 % nearTcin the same field and increases to about 2.15 % in H20 k<missing VAR>Oe.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 1.33, 'MHz', 4],[80.0, 250, 'K', 3],[16.0, 2.1, 'kOe', 1]

(H)
###Giant radio-frequency magnetoabsorption effect in the cobaltite ceramic La_{0.5}Sr_{0.5}CoO_3|B. I. Belevtsev,A. Ya. Kirichenko,N. T. Cherpak,G. V. Golubnichaya,I. G. Maximchuk,A. B. Beznosov,V. B. Krasovitsky,P. P. Pal-Val,I. N. Chukanova###
(879362, 879364)
 This differs drastically from the measured D<missing VAR>Cmagnetoresistance (MR) delta (H) [R<missing VAR>(0)-R<missing VAR>(H)]/R<missing VAR>(0) which is a mere 0.26 % nearTcin the same field and increases to about 2.15 % in H20 k<missing VAR>Oe.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 1.33, 'MHz', 4],[92.0, 250, 'K', 3],[28.0, 2.1, 'kOe', 1]

(H)
###Giant radio-frequency magnetoabsorption effect in the cobaltite ceramic La_{0.5}Sr_{0.5}CoO_3|B. I. Belevtsev,A. Ya. Kirichenko,N. T. Cherpak,G. V. Golubnichaya,I. G. Maximchuk,A. B. Beznosov,V. B. Krasovitsky,P. P. Pal-Val,I. N. Chukanova###
(879373, 879375)
 This differs drastically from the measured D<missing VAR>Cmagnetoresistance (MR) delta (H) [R<missing VAR>(0)-R<missing VAR>(H)]/R<missing VAR>(0) which is a mere 0.26 % nearTcin the same field and increases to about 2.15 % in H20 k<missing VAR>Oe.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 1.33, 'MHz', 4],[103.0, 250, 'K', 3],[39.0, 2.1, 'kOe', 1]

H20
###Giant radio-frequency magnetoabsorption effect in the cobaltite ceramic La_{0.5}Sr_{0.5}CoO_3|B. I. Belevtsev,A. Ya. Kirichenko,N. T. Cherpak,G. V. Golubnichaya,I. G. Maximchuk,A. B. Beznosov,V. B. Krasovitsky,P. P. Pal-Val,I. N. Chukanova###
(879422, 879423)
 This differs drastically from the measured D<missing VAR>Cmagnetoresistance (MR) delta (H) [R<missing VAR>(0)-R<missing VAR>(H)]/R<missing VAR>(0) which is a mere 0.26 % nearTcin the same field and increases to about 2.15 % in H20 k<missing VAR>Oe.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[201.0, 1.33, 'MHz', 4],[152.0, 250, 'K', 3],[88.0, 2.1, 'kOe', 1]

F
###Giant radio-frequency magnetoabsorption effect in the cobaltite ceramic La_{0.5}Sr_{0.5}CoO_3|B. I. Belevtsev,A. Ya. Kirichenko,N. T. Cherpak,G. V. Golubnichaya,I. G. Maximchuk,A. B. Beznosov,V. B. Krasovitsky,P. P. Pal-Val,I. N. Chukanova###
(879521, 879521)
 Themagnetoabsorption effect can be used to develop R<missing VAR>F devices controlled bymagnetic field and temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[300.0, 1.33, 'MHz', 6],[251.0, 250, 'K', 5],[187.0, 2.1, 'kOe', 3]

In
###Diagnosis and Location of Pinhole Defects in Tunnel Junctions using only Electrical Measurements|Zhongsheng Zhang,David A. Rabson###
(879574, 879574)
 In the development of the first generation of sensors and memory chips basedon spin-dependent tunneling through a thin trilayer, it has become clear thatpinhole defects can have a deleterious effect on magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Parallel magnetic field induced magnetoresistance peculiarities of the double quantum well filled with electrons or holes|M. V. Yakunin,G. A. Alshanskii,Yu. G. Arapov,G. I. Harus,V. N. Neverov,N. G. Shelushinina,O. A. Kuznetsov,B. N. Zvonkov,E. A. Uskova,L. Ponomarenko,A. de Visser###
(879902, 879902)
 In Inx<missing VAR>Ga1-xAs/n<missing VAR>-GaAs double quantum wells (DQWs) containing an electrongas, the magnetoresistance (MR) peculiarities under parallel magnetic fieldscaused by the passing of the tunnel gap edges through the Fermi level arerevealed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Parallel magnetic field induced magnetoresistance peculiarities of the double quantum well filled with electrons or holes|M. V. Yakunin,G. A. Alshanskii,Yu. G. Arapov,G. I. Harus,V. N. Neverov,N. G. Shelushinina,O. A. Kuznetsov,B. N. Zvonkov,E. A. Uskova,L. Ponomarenko,A. de Visser###
(879904, 879904)
 In Inx<missing VAR>Ga1-xAs/n<missing VAR>-GaAs double quantum wells (DQWs) containing an electrongas, the magnetoresistance (MR) peculiarities under parallel magnetic fieldscaused by the passing of the tunnel gap edges through the Fermi level arerevealed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga1-xAs
###Parallel magnetic field induced magnetoresistance peculiarities of the double quantum well filled with electrons or holes|M. V. Yakunin,G. A. Alshanskii,Yu. G. Arapov,G. I. Harus,V. N. Neverov,N. G. Shelushinina,O. A. Kuznetsov,B. N. Zvonkov,E. A. Uskova,L. Ponomarenko,A. de Visser###
(879906, 879910)
 In Inx<missing VAR>Ga1-xAs/n<missing VAR>-GaAs double quantum wells (DQWs) containing an electrongas, the magnetoresistance (MR) peculiarities under parallel magnetic fieldscaused by the passing of the tunnel gap edges through the Fermi level arerevealed.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

GaAs
###Parallel magnetic field induced magnetoresistance peculiarities of the double quantum well filled with electrons or holes|M. V. Yakunin,G. A. Alshanskii,Yu. G. Arapov,G. I. Harus,V. N. Neverov,N. G. Shelushinina,O. A. Kuznetsov,B. N. Zvonkov,E. A. Uskova,L. Ponomarenko,A. de Visser###
(879914, 879915)
 In Inx<missing VAR>Ga1-xAs/n<missing VAR>-GaAs double quantum wells (DQWs) containing an electrongas, the magnetoresistance (MR) peculiarities under parallel magnetic fieldscaused by the passing of the tunnel gap edges through the Fermi level arerevealed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Parallel magnetic field induced magnetoresistance peculiarities of the double quantum well filled with electrons or holes|M. V. Yakunin,G. A. Alshanskii,Yu. G. Arapov,G. I. Harus,V. N. Neverov,N. G. Shelushinina,O. A. Kuznetsov,B. N. Zvonkov,E. A. Uskova,L. Ponomarenko,A. de Visser###
(880028, 880028)
 Peculiarities positioned in high fields (30 T) can only be explainedif the spin-splitting of the Inx<missing VAR>Ga1-xAs conduction band is considered, thatwas neglected in the GaAs/AlGaAs heterostructures, for which solely the effectsof this nature have been observed so far.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga1-xAs
###Parallel magnetic field induced magnetoresistance peculiarities of the double quantum well filled with electrons or holes|M. V. Yakunin,G. A. Alshanskii,Yu. G. Arapov,G. I. Harus,V. N. Neverov,N. G. Shelushinina,O. A. Kuznetsov,B. N. Zvonkov,E. A. Uskova,L. Ponomarenko,A. de Visser###
(880030, 880034)
 Peculiarities positioned in high fields (30 T) can only be explainedif the spin-splitting of the Inx<missing VAR>Ga1-xAs conduction band is considered, thatwas neglected in the GaAs/AlGaAs heterostructures, for which solely the effectsof this nature have been observed so far.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

GaAs/AlGaAs
###Parallel magnetic field induced magnetoresistance peculiarities of the double quantum well filled with electrons or holes|M. V. Yakunin,G. A. Alshanskii,Yu. G. Arapov,G. I. Harus,V. N. Neverov,N. G. Shelushinina,O. A. Kuznetsov,B. N. Zvonkov,E. A. Uskova,L. Ponomarenko,A. de Visser###
(880056, 880061)
 Peculiarities positioned in high fields (30 T) can only be explainedif the spin-splitting of the Inx<missing VAR>Ga1-xAs conduction band is considered, thatwas neglected in the GaAs/AlGaAs heterostructures, for which solely the effectsof this nature have been observed so far.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

In
###Parallel magnetic field induced magnetoresistance peculiarities of the double quantum well filled with electrons or holes|M. V. Yakunin,G. A. Alshanskii,Yu. G. Arapov,G. I. Harus,V. N. Neverov,N. G. Shelushinina,O. A. Kuznetsov,B. N. Zvonkov,E. A. Uskova,L. Ponomarenko,A. de Visser###
(880094, 880094)
 In Ge/p<missing VAR>-Ge1-xSix DQWs containinga hole gas, local MR peculiarities under parallel fields are discovered aswell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ge
###Parallel magnetic field induced magnetoresistance peculiarities of the double quantum well filled with electrons or holes|M. V. Yakunin,G. A. Alshanskii,Yu. G. Arapov,G. I. Harus,V. N. Neverov,N. G. Shelushinina,O. A. Kuznetsov,B. N. Zvonkov,E. A. Uskova,L. Ponomarenko,A. de Visser###
(880096, 880096)
 In Ge/p<missing VAR>-Ge1-xSix DQWs containinga hole gas, local MR peculiarities under parallel fields are discovered aswell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ge1-xSi
###Parallel magnetic field induced magnetoresistance peculiarities of the double quantum well filled with electrons or holes|M. V. Yakunin,G. A. Alshanskii,Yu. G. Arapov,G. I. Harus,V. N. Neverov,N. G. Shelushinina,O. A. Kuznetsov,B. N. Zvonkov,E. A. Uskova,L. Ponomarenko,A. de Visser###
(880100, 880104)
 In Ge/p<missing VAR>-Ge1-xSix DQWs containinga hole gas, local MR peculiarities under parallel fields are discovered aswell.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

At
###Electron Coherence in Mesoscopic Kondo Wires|F. Schopfer,C. Bäuerle,W. Rabaud,L. Saminadayar###
(880710, 880710)
At much lower temperatures, the phase coherence time saturates again, incontradiction with standard Fermi liquid theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 300, 'mK', 2],[64.0, 800, 'mK', 2]

In
###Electron Coherence in Mesoscopic Kondo Wires|F. Schopfer,C. Bäuerle,W. Rabaud,L. Saminadayar###
(880748, 880748)
 In the same temperatureregime, the resistivity curve displays a characteristic maximum at zeromagnetic field, associated with the formation of a spin glass state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 300, 'mK', 3],[102.0, 800, 'mK', 3]

III
###Hall effect and magnetoresistance in p-type ferromagnetic semiconductors|Tomasz Dietl,Fumihiro Matsukura,Hideo Ohno,Joel Cibert,David Ferrand###
(880894, 880896)
 Recent works aiming at understanding magnetotransport phenomena inferromagnetic III-V and II-VI semiconductors are described.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Hall effect and magnetoresistance in p-type ferromagnetic semiconductors|Tomasz Dietl,Fumihiro Matsukura,Hideo Ohno,Joel Cibert,David Ferrand###
(880898, 880898)
 Recent works aiming at understanding magnetotransport phenomena inferromagnetic III-V and II-VI semiconductors are described.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Hall effect and magnetoresistance in p-type ferromagnetic semiconductors|Tomasz Dietl,Fumihiro Matsukura,Hideo Ohno,Joel Cibert,David Ferrand###
(880902, 880903)
 Recent works aiming at understanding magnetotransport phenomena inferromagnetic III-V and II-VI semiconductors are described.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

VI
###Hall effect and magnetoresistance in p-type ferromagnetic semiconductors|Tomasz Dietl,Fumihiro Matsukura,Hideo Ohno,Joel Cibert,David Ferrand###
(880905, 880906)
 Recent works aiming at understanding magnetotransport phenomena inferromagnetic III-V and II-VI semiconductors are described.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###Hall effect and magnetoresistance in p-type ferromagnetic semiconductors|Tomasz Dietl,Fumihiro Matsukura,Hideo Ohno,Joel Cibert,David Ferrand###
(880972, 880972)
 Theory of theanomalous Hall effect in p<missing VAR>-type magnetic semiconductors is discussed, and therelative role of side-jump and skew-scattering mechanisms assessed for(Ga,Mn)As and (Zn,Mn)Te.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Hall effect and magnetoresistance in p-type ferromagnetic semiconductors|Tomasz Dietl,Fumihiro Matsukura,Hideo Ohno,Joel Cibert,David Ferrand###
(880974, 880974)
 Theory of theanomalous Hall effect in p<missing VAR>-type magnetic semiconductors is discussed, and therelative role of side-jump and skew-scattering mechanisms assessed for(Ga,Mn)As and (Zn,Mn)Te.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Hall effect and magnetoresistance in p-type ferromagnetic semiconductors|Tomasz Dietl,Fumihiro Matsukura,Hideo Ohno,Joel Cibert,David Ferrand###
(880976, 880976)
 Theory of theanomalous Hall effect in p<missing VAR>-type magnetic semiconductors is discussed, and therelative role of side-jump and skew-scattering mechanisms assessed for(Ga,Mn)As and (Zn,Mn)Te.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Zn
###Hall effect and magnetoresistance in p-type ferromagnetic semiconductors|Tomasz Dietl,Fumihiro Matsukura,Hideo Ohno,Joel Cibert,David Ferrand###
(880981, 880981)
 Theory of theanomalous Hall effect in p<missing VAR>-type magnetic semiconductors is discussed, and therelative role of side-jump and skew-scattering mechanisms assessed for(Ga,Mn)As and (Zn,Mn)Te.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Hall effect and magnetoresistance in p-type ferromagnetic semiconductors|Tomasz Dietl,Fumihiro Matsukura,Hideo Ohno,Joel Cibert,David Ferrand###
(880983, 880983)
 Theory of theanomalous Hall effect in p<missing VAR>-type magnetic semiconductors is discussed, and therelative role of side-jump and skew-scattering mechanisms assessed for(Ga,Mn)As and (Zn,Mn)Te.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Te
###Hall effect and magnetoresistance in p-type ferromagnetic semiconductors|Tomasz Dietl,Fumihiro Matsukura,Hideo Ohno,Joel Cibert,David Ferrand###
(880985, 880985)
 Theory of theanomalous Hall effect in p<missing VAR>-type magnetic semiconductors is discussed, and therelative role of side-jump and skew-scattering mechanisms assessed for(Ga,Mn)As and (Zn,Mn)Te.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Growth and properties of ferromagnetic In(1-x)Mn(x)Sb alloys|T. Wojtowicz,W. L. Lim,X. Liu,G. Cywinski,M. Kutrowski,L. V. Titova,K. Yee,M. Dobrowolska,J. K. Furdyna,K. M. Yu,W. Walukiewicz,G. B. Kim,M. Cheon,X. Chen,S. M. Wang,H. Luo,I. Vurgaftman,J. R. Meyer###
(881169, 881169)
Growth and properties of ferromagnetic In(1-x)Mn(x)Sb alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sb
###Growth and properties of ferromagnetic In(1-x)Mn(x)Sb alloys|T. Wojtowicz,W. L. Lim,X. Liu,G. Cywinski,M. Kutrowski,L. V. Titova,K. Yee,M. Dobrowolska,J. K. Furdyna,K. M. Yu,W. Walukiewicz,G. B. Kim,M. Cheon,X. Chen,S. M. Wang,H. Luo,I. Vurgaftman,J. R. Meyer###
(881173, 881173)
Growth and properties of ferromagnetic In(1-x)Mn(x)Sb alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Growth and properties of ferromagnetic In(1-x)Mn(x)Sb alloys|T. Wojtowicz,W. L. Lim,X. Liu,G. Cywinski,M. Kutrowski,L. V. Titova,K. Yee,M. Dobrowolska,J. K. Furdyna,K. M. Yu,W. Walukiewicz,G. B. Kim,M. Cheon,X. Chen,S. M. Wang,H. Luo,I. Vurgaftman,J. R. Meyer###
(881193, 881193)
 We discuss a new narrow-gap ferromagnetic (FM) semiconductor alloy,In(1-x)Mn(x)Sb, and its growth by low-temperature molecular-beam epitaxy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Growth and properties of ferromagnetic In(1-x)Mn(x)Sb alloys|T. Wojtowicz,W. L. Lim,X. Liu,G. Cywinski,M. Kutrowski,L. V. Titova,K. Yee,M. Dobrowolska,J. K. Furdyna,K. M. Yu,W. Walukiewicz,G. B. Kim,M. Cheon,X. Chen,S. M. Wang,H. Luo,I. Vurgaftman,J. R. Meyer###
(881209, 881209)
 We discuss a new narrow-gap ferromagnetic (FM) semiconductor alloy,In(1-x)Mn(x)Sb, and its growth by low-temperature molecular-beam epitaxy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sb
###Growth and properties of ferromagnetic In(1-x)Mn(x)Sb alloys|T. Wojtowicz,W. L. Lim,X. Liu,G. Cywinski,M. Kutrowski,L. V. Titova,K. Yee,M. Dobrowolska,J. K. Furdyna,K. M. Yu,W. Walukiewicz,G. B. Kim,M. Cheon,X. Chen,S. M. Wang,H. Luo,I. Vurgaftman,J. R. Meyer###
(881213, 881213)
 We discuss a new narrow-gap ferromagnetic (FM) semiconductor alloy,In(1-x)Mn(x)Sb, and its growth by low-temperature molecular-beam epitaxy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Growth and properties of ferromagnetic In(1-x)Mn(x)Sb alloys|T. Wojtowicz,W. L. Lim,X. Liu,G. Cywinski,M. Kutrowski,L. V. Titova,K. Yee,M. Dobrowolska,J. K. Furdyna,K. M. Yu,W. Walukiewicz,G. B. Kim,M. Cheon,X. Chen,S. M. Wang,H. Luo,I. Vurgaftman,J. R. Meyer###
(881298, 881298)
 These data clearly indicate that In(1-x)Mn(x)Sb possesses all theattributes of a system with carrier-mediated FM<missing VAR> interactions, includingwell-defined hysteresis loops, a cusp in the temperature dependence of theresistivity, strong negative magnetoresistance, and a large anomalous Halleffect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sb
###Growth and properties of ferromagnetic In(1-x)Mn(x)Sb alloys|T. Wojtowicz,W. L. Lim,X. Liu,G. Cywinski,M. Kutrowski,L. V. Titova,K. Yee,M. Dobrowolska,J. K. Furdyna,K. M. Yu,W. Walukiewicz,G. B. Kim,M. Cheon,X. Chen,S. M. Wang,H. Luo,I. Vurgaftman,J. R. Meyer###
(881302, 881302)
 These data clearly indicate that In(1-x)Mn(x)Sb possesses all theattributes of a system with carrier-mediated FM<missing VAR> interactions, includingwell-defined hysteresis loops, a cusp in the temperature dependence of theresistivity, strong negative magnetoresistance, and a large anomalous Halleffect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Growth and properties of ferromagnetic In(1-x)Mn(x)Sb alloys|T. Wojtowicz,W. L. Lim,X. Liu,G. Cywinski,M. Kutrowski,L. V. Titova,K. Yee,M. Dobrowolska,J. K. Furdyna,K. M. Yu,W. Walukiewicz,G. B. Kim,M. Cheon,X. Chen,S. M. Wang,H. Luo,I. Vurgaftman,J. R. Meyer###
(881325, 881325)
 These data clearly indicate that In(1-x)Mn(x)Sb possesses all theattributes of a system with carrier-mediated FM<missing VAR> interactions, includingwell-defined hysteresis loops, a cusp in the temperature dependence of theresistivity, strong negative magnetoresistance, and a large anomalous Halleffect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Growth and properties of ferromagnetic In(1-x)Mn(x)Sb alloys|T. Wojtowicz,W. L. Lim,X. Liu,G. Cywinski,M. Kutrowski,L. V. Titova,K. Yee,M. Dobrowolska,J. K. Furdyna,K. M. Yu,W. Walukiewicz,G. B. Kim,M. Cheon,X. Chen,S. M. Wang,H. Luo,I. Vurgaftman,J. R. Meyer###
(881409, 881409)
 The Curie temperatures in samples investigated thus far range up to 8.5K, which are consistent with a mean-field-theory simulation of thecarrier-induced ferromagnetism based on the 8-band effective band-orbitalmethod.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Domain-wall profile in the presence of anisotropic exchange interactions: Effective on-site anisotropy|A. O. Garcia Rodriguez,A. Villares Ferrer,A. O. Caldeira###
(881583, 881583)
 As a result the effective width of the walldepends on the dimensionality of the system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi
###Magnetic-field induced superconductor-metal-insulator transitions in bismuth metal-graphite|Masatsugu Suzuki,Itsuko S. Suzuki,Robert Lee,Jürgen Walter###
(881901, 881901)
 Bismuth-metal graphite (MG) has a unique layered structure where Binanoparticles are encapsulated between adjacent sheets of nanographites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 2.48, 'K', 1],[55.0, 30, 'K', 2],[129.0, 25, 'kOe', 3],[175.0, 0, '<', 4],[215.0, 40, 'kOe', 4]

Bi
###Magnetic-field induced superconductor-metal-insulator transitions in bismuth metal-graphite|Masatsugu Suzuki,Itsuko S. Suzuki,Robert Lee,Jürgen Walter###
(881941, 881941)
 Thesuperconductivity below Tc ( 2.48 K) is due to Bi nanoparticles.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 2.48, 'K', 0],[15.0, 30, 'K', 1],[89.0, 25, 'kOe', 2],[135.0, 0, '<', 3],[175.0, 40, 'kOe', 3]

H
###Magnetic-field induced superconductor-metal-insulator transitions in bismuth metal-graphite|Masatsugu Suzuki,Itsuko S. Suzuki,Robert Lee,Jürgen Walter###
(882025, 882025)
 A magnetic-field induced transition frommetallic to semiconductor-like phase is observed in the in-plane resistivityrhoa around Hc<missing VAR> (approx 25 kOe) for both Hperpc<missing VAR> andHparallelc<missing VAR> (c c axis).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 2.48, 'K', 2],[69.0, 30, 'K', 1],[5.0, 25, 'kOe', 0],[51.0, 0, '<', 1],[91.0, 40, 'kOe', 1]

H
###Magnetic-field induced superconductor-metal-insulator transitions in bismuth metal-graphite|Masatsugu Suzuki,Itsuko S. Suzuki,Robert Lee,Jürgen Walter###
(882037, 882037)
 A magnetic-field induced transition frommetallic to semiconductor-like phase is observed in the in-plane resistivityrhoa around Hc<missing VAR> (approx 25 kOe) for both Hperpc<missing VAR> andHparallelc<missing VAR> (c c axis).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 2.48, 'K', 2],[81.0, 30, 'K', 1],[7.0, 25, 'kOe', 0],[39.0, 0, '<', 1],[79.0, 40, 'kOe', 1]

H
###Magnetic-field induced superconductor-metal-insulator transitions in bismuth metal-graphite|Masatsugu Suzuki,Itsuko S. Suzuki,Robert Lee,Jürgen Walter###
(882044, 882044)
 A magnetic-field induced transition frommetallic to semiconductor-like phase is observed in the in-plane resistivityrhoa around Hc<missing VAR> (approx 25 kOe) for both Hperpc<missing VAR> andHparallelc<missing VAR> (c c axis).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 2.48, 'K', 2],[88.0, 30, 'K', 1],[14.0, 25, 'kOe', 0],[32.0, 0, '<', 1],[72.0, 40, 'kOe', 1]

H
###Magnetic-field induced superconductor-metal-insulator transitions in bismuth metal-graphite|Masatsugu Suzuki,Itsuko S. Suzuki,Robert Lee,Jürgen Walter###
(882071, 882071)
 A negative magnetoresistance in rhoa forHperpc<missing VAR> (0<Hleq3.5 k<missing VAR>Oe) and a logarithmic divergence in rhoawith decreasing temperature for Hparallelc<missing VAR> (H > 40 kOe) suggest theoccurrence of two-dimensional weak localization effect.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 2.48, 'K', 3],[115.0, 30, 'K', 2],[41.0, 25, 'kOe', 1],[5.0, 0, '<', 0],[45.0, 40, 'kOe', 0]

H
###Magnetic-field induced superconductor-metal-insulator transitions in bismuth metal-graphite|Masatsugu Suzuki,Itsuko S. Suzuki,Robert Lee,Jürgen Walter###
(882078, 882078)
 A negative magnetoresistance in rhoa forHperpc<missing VAR> (0<Hleq3.5 k<missing VAR>Oe) and a logarithmic divergence in rhoawith decreasing temperature for Hparallelc<missing VAR> (H > 40 kOe) suggest theoccurrence of two-dimensional weak localization effect.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 2.48, 'K', 3],[122.0, 30, 'K', 2],[48.0, 25, 'kOe', 1],[2.0, 0, '<', 0],[38.0, 40, 'kOe', 0]

H
###Magnetic-field induced superconductor-metal-insulator transitions in bismuth metal-graphite|Masatsugu Suzuki,Itsuko S. Suzuki,Robert Lee,Jürgen Walter###
(882108, 882108)
 A negative magnetoresistance in rhoa forHperpc<missing VAR> (0<Hleq3.5 k<missing VAR>Oe) and a logarithmic divergence in rhoawith decreasing temperature for Hparallelc<missing VAR> (H > 40 kOe) suggest theoccurrence of two-dimensional weak localization effect.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[176.0, 2.48, 'K', 3],[152.0, 30, 'K', 2],[78.0, 25, 'kOe', 1],[32.0, 0, '<', 0],[8.0, 40, 'kOe', 0]

H
###Magnetic-field induced superconductor-metal-insulator transitions in bismuth metal-graphite|Masatsugu Suzuki,Itsuko S. Suzuki,Robert Lee,Jürgen Walter###
(882113, 882113)
 A negative magnetoresistance in rhoa forHperpc<missing VAR> (0<Hleq3.5 k<missing VAR>Oe) and a logarithmic divergence in rhoawith decreasing temperature for Hparallelc<missing VAR> (H > 40 kOe) suggest theoccurrence of two-dimensional weak localization effect.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 2.48, 'K', 3],[157.0, 30, 'K', 2],[83.0, 25, 'kOe', 1],[37.0, 0, '<', 0],[3.0, 40, 'kOe', 0]

In
###Evidence for current flow anomalies in the irradiated 2D electron system at small magnetic fields|R. L. Willett,L. N. Pfeiffer,K. W. West###
(882311, 882311)
 In addition,under radiation, voltages are observed from internal to external contacts inthe absence of applied driving currents not due to simple rectification.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 2, 'D', 3],[112.0, 2, 'D', 2],[97.0, 20, 'GHz', 2],[57.0, 2, 'D', 1]

CoO2
###Evidence for two electronic components in NaxCoO2 (x = 0.7-0.75)|M. Brühwiler,B. Batlogg,S. M. Kazakov,J. Karpinski###
(882479, 882481)
Evidence for two electronic components in NaxCoO2 (x<missing VAR>  0.7-0.75).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 1, ',', 2]

CoO2
###Evidence for two electronic components in NaxCoO2 (x = 0.7-0.75)|M. Brühwiler,B. Batlogg,S. M. Kazakov,J. Karpinski###
(882504, 882506)
 Thermodynamic and transport measurements on NaxCoO2 (x<missing VAR>  0.7-0.75) over awide temperature range reveal a strongly enhanced low energy excitationspectrum.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 1, ',', 1]

K
###Evidence for two electronic components in NaxCoO2 (x = 0.7-0.75)|M. Brühwiler,B. Batlogg,S. M. Kazakov,J. Karpinski###
(882617, 882617)
 For temperatures below 5 K this unusual excitationseen in the specific heat is partially suppressed in a magnetic field,following a T<missing VAR>/B scaling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 1, ',', 1]

B
###Evidence for two electronic components in NaxCoO2 (x = 0.7-0.75)|M. Brühwiler,B. Batlogg,S. M. Kazakov,J. Karpinski###
(882658, 882658)
 For temperatures below 5 K this unusual excitationseen in the specific heat is partially suppressed in a magnetic field,following a T<missing VAR>/B scaling.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 1, ',', 1]

Co/Cu
###Controllable Josephson current through a pseudo-spin-valve structure|C. Bell,G. Burnell,C. W. Leung,E. J. Tarte,D. -J. Kang,M. G. Blamire###
(882780, 882782)
 A thin Co/Cu/Permalloy (Ni80Fe20) pseudo-spin-valve structure issandwiched between superconducting Nb contacts.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[77.0, 4.2, 'K', 1]

(Ni80Fe20)
###Controllable Josephson current through a pseudo-spin-valve structure|C. Bell,G. Burnell,C. W. Leung,E. J. Tarte,D. -J. Kang,M. G. Blamire###
(882786, 882791)
 A thin Co/Cu/Permalloy (Ni80Fe20) pseudo-spin-valve structure issandwiched between superconducting Nb contacts.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 4.2, 'K', 1]

Nb
###Controllable Josephson current through a pseudo-spin-valve structure|C. Bell,G. Burnell,C. W. Leung,E. J. Tarte,D. -J. Kang,M. G. Blamire###
(882810, 882810)
 A thin Co/Cu/Permalloy (Ni80Fe20) pseudo-spin-valve structure issandwiched between superconducting Nb contacts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 4.2, 'K', 1]

(IC)
###Controllable Josephson current through a pseudo-spin-valve structure|C. Bell,G. Burnell,C. W. Leung,E. J. Tarte,D. -J. Kang,M. G. Blamire###
(882848, 882851)
 When the current is passedperpendicular to the plane of the film a Josephson critical current (IC) isobserved at 4.2 K, in addition to a magnetoresistance (MR) of sim 0.5 % athigh bias.
Featurization successful!
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 4.2, 'K', 0]

IC
###Controllable Josephson current through a pseudo-spin-valve structure|C. Bell,G. Burnell,C. W. Leung,E. J. Tarte,D. -J. Kang,M. G. Blamire###
(882926, 882927)
 The hysteresis loop of the spin-valve structure can be cycled tomodulate the zero field IC of the junction in line with the MR measurements.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 4.2, 'K', 1]

IC
###Controllable Josephson current through a pseudo-spin-valve structure|C. Bell,G. Burnell,C. W. Leung,E. J. Tarte,D. -J. Kang,M. G. Blamire###
(882960, 882961)
These modulations of resistance and IC occur both smoothly and sharply withthe applied field.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 4.2, 'K', 2]

IC
###Controllable Josephson current through a pseudo-spin-valve structure|C. Bell,G. Burnell,C. W. Leung,E. J. Tarte,D. -J. Kang,M. G. Blamire###
(883021, 883022)
 For each type of behaviour there is a strong correlationbetween shape of the MR loops and the IC modulation.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 4.2, 'K', 3]

In
###Giant Quantum Oscillations of the Longitudinal Magnetoresistance in Quasi two-dimensional Metals|T. Champel,V. P. Mineev###
(883189, 883189)
 In large magnetic fields and at low temperatures,the minima of the magnetoconductivity sigmazzrhozz-1 exhibit athermally activated behavior in presence of negligibly small chemical potentialoscillations, as observed in the organic layered conductorbetamathrm-(BEDT-TTF)2mathrmSF5mathrmCH2mathrmCF2m<missing VAR>athrmSO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Giant Quantum Oscillations of the Longitudinal Magnetoresistance in Quasi two-dimensional Metals|T. Champel,V. P. Mineev###
(883272, 883272)
 In large magnetic fields and at low temperatures,the minima of the magnetoconductivity sigmazzrhozz-1 exhibit athermally activated behavior in presence of negligibly small chemical potentialoscillations, as observed in the organic layered conductorbetamathrm-(BEDT-TTF)2mathrmSF5mathrmCH2mathrmCF2m<missing VAR>athrmSO3.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Giant Quantum Oscillations of the Longitudinal Magnetoresistance in Quasi two-dimensional Metals|T. Champel,V. P. Mineev###
(883279, 883279)
 In large magnetic fields and at low temperatures,the minima of the magnetoconductivity sigmazzrhozz-1 exhibit athermally activated behavior in presence of negligibly small chemical potentialoscillations, as observed in the organic layered conductorbetamathrm-(BEDT-TTF)2mathrmSF5mathrmCH2mathrmCF2m<missing VAR>athrmSO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SF5
###Giant Quantum Oscillations of the Longitudinal Magnetoresistance in Quasi two-dimensional Metals|T. Champel,V. P. Mineev###
(883283, 883285)
 In large magnetic fields and at low temperatures,the minima of the magnetoconductivity sigmazzrhozz-1 exhibit athermally activated behavior in presence of negligibly small chemical potentialoscillations, as observed in the organic layered conductorbetamathrm-(BEDT-TTF)2mathrmSF5mathrmCH2mathrmCF2m<missing VAR>athrmSO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CH2
###Giant Quantum Oscillations of the Longitudinal Magnetoresistance in Quasi two-dimensional Metals|T. Champel,V. P. Mineev###
(883287, 883289)
 In large magnetic fields and at low temperatures,the minima of the magnetoconductivity sigmazzrhozz-1 exhibit athermally activated behavior in presence of negligibly small chemical potentialoscillations, as observed in the organic layered conductorbetamathrm-(BEDT-TTF)2mathrmSF5mathrmCH2mathrmCF2m<missing VAR>athrmSO3.
Featurization terminated normally.
0.6666666666666666,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CF2
###Giant Quantum Oscillations of the Longitudinal Magnetoresistance in Quasi two-dimensional Metals|T. Champel,V. P. Mineev###
(883291, 883293)
 In large magnetic fields and at low temperatures,the minima of the magnetoconductivity sigmazzrhozz-1 exhibit athermally activated behavior in presence of negligibly small chemical potentialoscillations, as observed in the organic layered conductorbetamathrm-(BEDT-TTF)2mathrmSF5mathrmCH2mathrmCF2m<missing VAR>athrmSO3.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO3
###Giant Quantum Oscillations of the Longitudinal Magnetoresistance in Quasi two-dimensional Metals|T. Champel,V. P. Mineev###
(883298, 883300)
 In large magnetic fields and at low temperatures,the minima of the magnetoconductivity sigmazzrhozz-1 exhibit athermally activated behavior in presence of negligibly small chemical potentialoscillations, as observed in the organic layered conductorbetamathrm-(BEDT-TTF)2mathrmSF5mathrmCH2mathrmCF2m<missing VAR>athrmSO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La1-x
###Modelling of strain effects in manganite films|C. A. Perroni,V. Cataudella,G. De Filippis,G. Iadonisi,V. Marigliano,F. Ventriglia###
(883387, 883390)
 Thickness dependence and strain effects in films of La1-xAx<missing VAR>MnO3perovskites are analyzed in the colossal magnetoresistance regime.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

MnO3
###Modelling of strain effects in manganite films|C. A. Perroni,V. Cataudella,G. De Filippis,G. Iadonisi,V. Marigliano,F. Ventriglia###
(883393, 883395)
 Thickness dependence and strain effects in films of La1-xAx<missing VAR>MnO3perovskites are analyzed in the colossal magnetoresistance regime.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Modelling of strain effects in manganite films|C. A. Perroni,V. Cataudella,G. De Filippis,G. Iadonisi,V. Marigliano,F. Ventriglia###
(883632, 883632)
The strain effects on the transition temperature and transport properties arein good agreement with experimental data only if the dependence of the hoppingmatrix elements on the Mn-O-Mn bond angle is properly taken into account.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Modelling of strain effects in manganite films|C. A. Perroni,V. Cataudella,G. De Filippis,G. Iadonisi,V. Marigliano,F. Ventriglia###
(883634, 883634)
The strain effects on the transition temperature and transport properties arein good agreement with experimental data only if the dependence of the hoppingmatrix elements on the Mn-O-Mn bond angle is properly taken into account.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Modelling of strain effects in manganite films|C. A. Perroni,V. Cataudella,G. De Filippis,G. Iadonisi,V. Marigliano,F. Ventriglia###
(883636, 883636)
The strain effects on the transition temperature and transport properties arein good agreement with experimental data only if the dependence of the hoppingmatrix elements on the Mn-O-Mn bond angle is properly taken into account.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La1-x
###The role of the cooperative Jahn-Teller effect in the charge ordered La1-xCaxMnO3 (0.5<=x<=0.87) manganites|R. K. Zheng,G. Li,A. N. Tang,Y. Yang,W. Wang,X. G. Li,Z. D. Wang,H. C. Ku###
(883740, 883743)
The role of the cooperative Jahn-Teller effect in the charge ordered La1-xCaxMnO3 (0.5<x<missing VAR><0.87) manganites.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[7.0, 0.5, '<', 0],[176.0, 3, 'd', 2]

MnO3
###The role of the cooperative Jahn-Teller effect in the charge ordered La1-xCaxMnO3 (0.5<=x<=0.87) manganites|R. K. Zheng,G. Li,A. N. Tang,Y. Yang,W. Wang,X. G. Li,Z. D. Wang,H. C. Ku###
(883745, 883747)
The role of the cooperative Jahn-Teller effect in the charge ordered La1-xCaxMnO3 (0.5<x<missing VAR><0.87) manganites.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 0.5, '<', 0],[172.0, 3, 'd', 2]

(CO)
###The role of the cooperative Jahn-Teller effect in the charge ordered La1-xCaxMnO3 (0.5<=x<=0.87) manganites|R. K. Zheng,G. Li,A. N. Tang,Y. Yang,W. Wang,X. G. Li,Z. D. Wang,H. C. Ku###
(883812, 883815)
 Based on the magnetoresistance, magnetization, ultrasound, andcrystallographic data, we studied the role of the cooperative Jahn-Tellereffect in the charge ordered (CO) state for La1-xCaxMnO3.
Featurization successful!
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 0.5, '<', 1],[104.0, 3, 'd', 1]

La1-x
###The role of the cooperative Jahn-Teller effect in the charge ordered La1-xCaxMnO3 (0.5<=x<=0.87) manganites|R. K. Zheng,G. Li,A. N. Tang,Y. Yang,W. Wang,X. G. Li,Z. D. Wang,H. C. Ku###
(883821, 883824)
 Based on the magnetoresistance, magnetization, ultrasound, andcrystallographic data, we studied the role of the cooperative Jahn-Tellereffect in the charge ordered (CO) state for La1-xCaxMnO3.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[71.0, 0.5, '<', 1],[95.0, 3, 'd', 1]

MnO3
###The role of the cooperative Jahn-Teller effect in the charge ordered La1-xCaxMnO3 (0.5<=x<=0.87) manganites|R. K. Zheng,G. Li,A. N. Tang,Y. Yang,W. Wang,X. G. Li,Z. D. Wang,H. C. Ku###
(883826, 883828)
 Based on the magnetoresistance, magnetization, ultrasound, andcrystallographic data, we studied the role of the cooperative Jahn-Tellereffect in the charge ordered (CO) state for La1-xCaxMnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 0.5, '<', 1],[91.0, 3, 'd', 1]

CO
###The role of the cooperative Jahn-Teller effect in the charge ordered La1-xCaxMnO3 (0.5<=x<=0.87) manganites|R. K. Zheng,G. Li,A. N. Tang,Y. Yang,W. Wang,X. G. Li,Z. D. Wang,H. C. Ku###
(883880, 883881)
 We found that, withincreasing the fraction of Q<missing VAR>3 mode of Jahn-Teller distortion and decreasingthat of Q<missing VAR>2 mode in the CO state, the magnetic structure evolves from CE<missing VAR>-type toC-type and the orbital ordering changes from 3d(x<missing VAR>2-r<missing VAR>2)/3d(y2-r<missing VAR>2)-type to3d(x2-z<missing VAR>2)-type, with the strength of ferromagnetism and the phase separationtendency being suppressed.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 0.5, '<', 2],[38.0, 3, 'd', 0]

C
###The role of the cooperative Jahn-Teller effect in the charge ordered La1-xCaxMnO3 (0.5<=x<=0.87) manganites|R. K. Zheng,G. Li,A. N. Tang,Y. Yang,W. Wang,X. G. Li,Z. D. Wang,H. C. Ku###
(883896, 883896)
 We found that, withincreasing the fraction of Q<missing VAR>3 mode of Jahn-Teller distortion and decreasingthat of Q<missing VAR>2 mode in the CO state, the magnetic structure evolves from CE<missing VAR>-type toC-type and the orbital ordering changes from 3d(x<missing VAR>2-r<missing VAR>2)/3d(y2-r<missing VAR>2)-type to3d(x2-z<missing VAR>2)-type, with the strength of ferromagnetism and the phase separationtendency being suppressed.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 0.5, '<', 2],[23.0, 3, 'd', 0]

C
###The role of the cooperative Jahn-Teller effect in the charge ordered La1-xCaxMnO3 (0.5<=x<=0.87) manganites|R. K. Zheng,G. Li,A. N. Tang,Y. Yang,W. Wang,X. G. Li,Z. D. Wang,H. C. Ku###
(883904, 883904)
 We found that, withincreasing the fraction of Q<missing VAR>3 mode of Jahn-Teller distortion and decreasingthat of Q<missing VAR>2 mode in the CO state, the magnetic structure evolves from CE<missing VAR>-type toC-type and the orbital ordering changes from 3d(x<missing VAR>2-r<missing VAR>2)/3d(y2-r<missing VAR>2)-type to3d(x2-z<missing VAR>2)-type, with the strength of ferromagnetism and the phase separationtendency being suppressed.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 0.5, '<', 2],[15.0, 3, 'd', 0]

At
###The role of the cooperative Jahn-Teller effect in the charge ordered La1-xCaxMnO3 (0.5<=x<=0.87) manganites|R. K. Zheng,G. Li,A. N. Tang,Y. Yang,W. Wang,X. G. Li,Z. D. Wang,H. C. Ku###
(883982, 883982)
 At the same time, the stability of the CO state andthe cooperative Jahn-Teller lattice distortion increase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[232.0, 0.5, '<', 3],[63.0, 3, 'd', 1]

CO
###The role of the cooperative Jahn-Teller effect in the charge ordered La1-xCaxMnO3 (0.5<=x<=0.87) manganites|R. K. Zheng,G. Li,A. N. Tang,Y. Yang,W. Wang,X. G. Li,Z. D. Wang,H. C. Ku###
(883999, 884000)
 At the same time, the stability of the CO state andthe cooperative Jahn-Teller lattice distortion increase.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[249.0, 0.5, '<', 3],[80.0, 3, 'd', 1]

CO
###The role of the cooperative Jahn-Teller effect in the charge ordered La1-xCaxMnO3 (0.5<=x<=0.87) manganites|R. K. Zheng,G. Li,A. N. Tang,Y. Yang,W. Wang,X. G. Li,Z. D. Wang,H. C. Ku###
(884072, 884073)
 These effects implythat the cooperative Jahn-Teller effect with different vibration modes is thekey ingredient in understanding the essential physics of the CO state.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[322.0, 0.5, '<', 4],[153.0, 3, 'd', 2]

SrRuO3
###Paramagnetic anisotropic magnetoresistance in thin films of SrRuO3|Isaschar Genish,Yevgeny Kats,Lior Klein,James W. Reiner,M. R. Beasley###
(884100, 884103)
Paramagnetic anisotropic magnetoresistance in thin films of SrRuO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 150, 'K', 1]

SrRuO3
###Paramagnetic anisotropic magnetoresistance in thin films of SrRuO3|Isaschar Genish,Yevgeny Kats,Lior Klein,James W. Reiner,M. R. Beasley###
(884106, 884109)
 SrRuO3 is an itinerant ferromagnet and in its thin film form when grown onmiscut SrTiO3 it has Tc of  150 K and strong uniaxial anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 150, 'K', 0]

SrTiO3
###Paramagnetic anisotropic magnetoresistance in thin films of SrRuO3|Isaschar Genish,Yevgeny Kats,Lior Klein,James W. Reiner,M. R. Beasley###
(884140, 884143)
 SrRuO3 is an itinerant ferromagnet and in its thin film form when grown onmiscut SrTiO3 it has Tc of  150 K and strong uniaxial anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 150, 'K', 0]

Tc
###Paramagnetic anisotropic magnetoresistance in thin films of SrRuO3|Isaschar Genish,Yevgeny Kats,Lior Klein,James W. Reiner,M. R. Beasley###
(884149, 884149)
 SrRuO3 is an itinerant ferromagnet and in its thin film form when grown onmiscut SrTiO3 it has Tc of  150 K and strong uniaxial anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 150, 'K', 0]

Tc
###Paramagnetic anisotropic magnetoresistance in thin films of SrRuO3|Isaschar Genish,Yevgeny Kats,Lior Klein,James W. Reiner,M. R. Beasley###
(884234, 884234)
 We measuredboth the Hall effect and the magnetoresistance (MR) of the films as a functionof the angle between the applied field and the normal to the films attemperatures above Tc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 150, 'K', 1]

Si
###Correlated vortex pinning in Si-nanoparticle doped MgB2|I. Kusevic,E. Babic,O. Husnjak,S. Soltanian,X. L. Wang,S. X. Dou###
(884432, 884432)
Correlated vortex pinning in Si-nanoparticle doped MgB2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 0.3, 'T', 2]

MgB2
###Correlated vortex pinning in Si-nanoparticle doped MgB2|I. Kusevic,E. Babic,O. Husnjak,S. Soltanian,X. L. Wang,S. X. Dou###
(884438, 884440)
Correlated vortex pinning in Si-nanoparticle doped MgB2.
Featurization terminated normally.
0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 0.3, 'T', 2]

Si
###Correlated vortex pinning in Si-nanoparticle doped MgB2|I. Kusevic,E. Babic,O. Husnjak,S. Soltanian,X. L. Wang,S. X. Dou###
(884462, 884462)
 The magnetoresistivity and critical current density of well characterizedSi-nanoparticle doped and undoped Cu-sheathed MgB2 tapes have beenmeasured at temperatures T<missing VAR>geq 28 K in magnetic fields Bleq 0.9 T<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 0.3, 'T', 1]

Cu
###Correlated vortex pinning in Si-nanoparticle doped MgB2|I. Kusevic,E. Babic,O. Husnjak,S. Soltanian,X. L. Wang,S. X. Dou###
(884472, 884472)
 The magnetoresistivity and critical current density of well characterizedSi-nanoparticle doped and undoped Cu-sheathed MgB2 tapes have beenmeasured at temperatures T<missing VAR>geq 28 K in magnetic fields Bleq 0.9 T<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 0.3, 'T', 1]

MgB2
###Correlated vortex pinning in Si-nanoparticle doped MgB2|I. Kusevic,E. Babic,O. Husnjak,S. Soltanian,X. L. Wang,S. X. Dou###
(884476, 884478)
 The magnetoresistivity and critical current density of well characterizedSi-nanoparticle doped and undoped Cu-sheathed MgB2 tapes have beenmeasured at temperatures T<missing VAR>geq 28 K in magnetic fields Bleq 0.9 T<missing VAR>.
Featurization terminated normally.
0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 0.3, 'T', 1]

K
###Correlated vortex pinning in Si-nanoparticle doped MgB2|I. Kusevic,E. Babic,O. Husnjak,S. Soltanian,X. L. Wang,S. X. Dou###
(884498, 884498)
 The magnetoresistivity and critical current density of well characterizedSi-nanoparticle doped and undoped Cu-sheathed MgB2 tapes have beenmeasured at temperatures T<missing VAR>geq 28 K in magnetic fields Bleq 0.9 T<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 0.3, 'T', 1]

B
###Correlated vortex pinning in Si-nanoparticle doped MgB2|I. Kusevic,E. Babic,O. Husnjak,S. Soltanian,X. L. Wang,S. X. Dou###
(884506, 884506)
 The magnetoresistivity and critical current density of well characterizedSi-nanoparticle doped and undoped Cu-sheathed MgB2 tapes have beenmeasured at temperatures T<missing VAR>geq 28 K in magnetic fields Bleq 0.9 T<missing VAR>.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 0.3, 'T', 1]

B
###Correlated vortex pinning in Si-nanoparticle doped MgB2|I. Kusevic,E. Babic,O. Husnjak,S. Soltanian,X. L. Wang,S. X. Dou###
(884521, 884521)
 Theirreversibility line Birr(T) for doped tape shows a stepwise variationwith a kink around 0.3 T.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 0.3, 'T', 0]

B
###Correlated vortex pinning in Si-nanoparticle doped MgB2|I. Kusevic,E. Babic,O. Husnjak,S. Soltanian,X. L. Wang,S. X. Dou###
(884554, 884554)
 Such Birr(T) variation is typical forhigh-temperature superconductors with columnar defects (a kink occurs near thematching field % Bphi) and is very different from a smooth Birr(T)variation in undoped MgB2 samples.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 0.3, 'T', 1]

B
###Correlated vortex pinning in Si-nanoparticle doped MgB2|I. Kusevic,E. Babic,O. Husnjak,S. Soltanian,X. L. Wang,S. X. Dou###
(884599, 884599)
 Such Birr(T) variation is typical forhigh-temperature superconductors with columnar defects (a kink occurs near thematching field % Bphi) and is very different from a smooth Birr(T)variation in undoped MgB2 samples.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 0.3, 'T', 1]

B
###Correlated vortex pinning in Si-nanoparticle doped MgB2|I. Kusevic,E. Babic,O. Husnjak,S. Soltanian,X. L. Wang,S. X. Dou###
(884617, 884617)
 Such Birr(T) variation is typical forhigh-temperature superconductors with columnar defects (a kink occurs near thematching field % Bphi) and is very different from a smooth Birr(T)variation in undoped MgB2 samples.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 0.3, 'T', 1]

MgB2
###Correlated vortex pinning in Si-nanoparticle doped MgB2|I. Kusevic,E. Babic,O. Husnjak,S. Soltanian,X. L. Wang,S. X. Dou###
(884630, 884632)
 Such Birr(T) variation is typical forhigh-temperature superconductors with columnar defects (a kink occurs near thematching field % Bphi) and is very different from a smooth Birr(T)variation in undoped MgB2 samples.
Featurization terminated normally.
0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 0.3, 'T', 1]

MgB2
###Correlated vortex pinning in Si-nanoparticle doped MgB2|I. Kusevic,E. Babic,O. Husnjak,S. Soltanian,X. L. Wang,S. X. Dou###
(884650, 884652)
 The microstructure studies ofnanoparticle doped MgB2 samples show uniformly dispersed nanoprecipitates,which probably act as a correlated disorder.
Featurization terminated normally.
0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 0.3, 'T', 2]

InGaAs
###Weak antilocalization in quantum wells in tilted magnetic fields|G. M. Minkov,A. V. Germanenko,O. E. Rut,A. A. Sherstobitov,L. E. Golub,B. N. Zvonkov,M. Willander###
(884775, 884777)
 Weak antilocalization is studied in an InGaAs quantum well.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 2, 'D', 4]

SrTiO3
###Substrate surface engineering for tailoring properties of functional ceramic thin films|H. -U. Habermeier###
(885250, 885253)
 The other makes use ofvicinal cut SrTiO3 which enables the fabrication of regular nanoscale step andterrace structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Substrate surface engineering for tailoring properties of functional ceramic thin films|H. -U. Habermeier###
(885279, 885279)
 In YBa2Cu3O7-x thin films grown on vicinal cut SrTiO3single crystals a regular array of antiphase boundaries is generated causing ananisotropic enhancement of flux-line pinning.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YBa2Cu3O7-x
###Substrate surface engineering for tailoring properties of functional ceramic thin films|H. -U. Habermeier###
(885281, 885289)
 In YBa2Cu3O7-x thin films grown on vicinal cut SrTiO3single crystals a regular array of antiphase boundaries is generated causing ananisotropic enhancement of flux-line pinning.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

SrTiO3
###Substrate surface engineering for tailoring properties of functional ceramic thin films|H. -U. Habermeier###
(885303, 885306)
 In YBa2Cu3O7-x thin films grown on vicinal cut SrTiO3single crystals a regular array of antiphase boundaries is generated causing ananisotropic enhancement of flux-line pinning.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Substrate surface engineering for tailoring properties of functional ceramic thin films|H. -U. Habermeier###
(885347, 885347)
 In the case of La-Ca-Mn-O thinfilms grown on vicinal cut substrates it could be demonstrated that magneticin-plane anisotropy is achieved.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La
###Substrate surface engineering for tailoring properties of functional ceramic thin films|H. -U. Habermeier###
(885355, 885355)
 In the case of La-Ca-Mn-O thinfilms grown on vicinal cut substrates it could be demonstrated that magneticin-plane anisotropy is achieved.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ca
###Substrate surface engineering for tailoring properties of functional ceramic thin films|H. -U. Habermeier###
(885357, 885357)
 In the case of La-Ca-Mn-O thinfilms grown on vicinal cut substrates it could be demonstrated that magneticin-plane anisotropy is achieved.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Substrate surface engineering for tailoring properties of functional ceramic thin films|H. -U. Habermeier###
(885359, 885359)
 In the case of La-Ca-Mn-O thinfilms grown on vicinal cut substrates it could be demonstrated that magneticin-plane anisotropy is achieved.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Substrate surface engineering for tailoring properties of functional ceramic thin films|H. -U. Habermeier###
(885361, 885361)
 In the case of La-Ca-Mn-O thinfilms grown on vicinal cut substrates it could be demonstrated that magneticin-plane anisotropy is achieved.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs/AlGaAs
###Competition Between Fractional Quantum Hall Liquid, Bubble and Wigner Crystal Phases in the Third Landau Level|G. Gervais,L. W. Engel,H. L. Stormer,D. C. Tsui,K. W. Baldwin,K. W. West,L. N. Pfeiffer###
(885773, 885778)
 Magnetotransport measurements were performed in a ultra-high mobilityGaAs/AlGaAs quantum well of density sim 3.0 times 1011 cm-2.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[101.0, 5, ',', 2]

In
###Competition Between Fractional Quantum Hall Liquid, Bubble and Wigner Crystal Phases in the Third Landau Level|G. Gervais,L. W. Engel,H. L. Stormer,D. C. Tsui,K. W. Baldwin,K. W. West,L. N. Pfeiffer###
(885841, 885841)
 In particular, we discovered new minima inR<missing VAR>xx at filling factor nusimeq 41/5 and 44/5, but only atintermediate temperatures 80lesssim T<missing VAR>lesssim 120 m<missing VAR>K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 5, ',', 0]

K
###Competition Between Fractional Quantum Hall Liquid, Bubble and Wigner Crystal Phases in the Third Landau Level|G. Gervais,L. W. Engel,H. L. Stormer,D. C. Tsui,K. W. Baldwin,K. W. West,L. N. Pfeiffer###
(885902, 885902)
 In particular, we discovered new minima inR<missing VAR>xx at filling factor nusimeq 41/5 and 44/5, but only atintermediate temperatures 80lesssim T<missing VAR>lesssim 120 m<missing VAR>K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 5, ',', 0]

N2
###Competition Between Fractional Quantum Hall Liquid, Bubble and Wigner Crystal Phases in the Third Landau Level|G. Gervais,L. W. Engel,H. L. Stormer,D. C. Tsui,K. W. Baldwin,K. W. West,L. N. Pfeiffer###
(885934, 885935)
 We interpret these asevidence for a fractional quantum Hall liquid forming in the N2 Landau leveland competing with bubble and Wigner crystal phases favored at lowertemperatures.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 5, ',', 1]

In
###Giant magnetoresistance of multiwall carbon nanotubes: modeling the tube/ferromagnetic-electrode burying contact|S. Krompiewski,R. Gutierrez,G. Cuniberti###
(886087, 886087)
 In particular, we consider the effect of theinter-wall interactions and the lead/nanotube coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Asymmetric I-V characteristics and magnetoresistance in magnetic point contacts|A. R. Rocha,S. Sanvito###
(886630, 886630)
Asymmetric I-V characteristics and magnetoresistance in magnetic point contacts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Asymmetric I-V characteristics and magnetoresistance in magnetic point contacts|A. R. Rocha,S. Sanvito###
(886632, 886632)
Asymmetric I-V characteristics and magnetoresistance in magnetic point contacts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Asymmetric I-V characteristics and magnetoresistance in magnetic point contacts|A. R. Rocha,S. Sanvito###
(886818, 886818)
 Moreover we show that the symmetry of theI-V characteristic depends on the position of the domain wall in theconstriction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Asymmetric I-V characteristics and magnetoresistance in magnetic point contacts|A. R. Rocha,S. Sanvito###
(886820, 886820)
 Moreover we show that the symmetry of theI-V characteristic depends on the position of the domain wall in theconstriction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Asymmetric I-V characteristics and magnetoresistance in magnetic point contacts|A. R. Rocha,S. Sanvito###
(886848, 886848)
 In particular diode-like curves can arise when the domain wall isplaced off-center within the point contact, although the whole structure doesnot present any structural asymmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.67Sr0.33MnO3
###Giant magnetic-field changes in radio-frequency absorption in La$_{0.67}$Sr$_{0.33}$MnO$_3$ near the Curie temperature|B. I. Belevtsev,A. Ya. Kirichenko,N. T. Cherpak,G. V. Golubnichaya,I. G. Maximchuk,E. Yu. Beliayev,A. S. Panfilov,J. Fink-Finowicki###
(886936, 886942)
Giant magnetic-field changes in radio-frequency absorption in La0.67Sr0.33MnO3 near the Curie temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.066,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.134,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 2.525, 'MHz', 1],[98.0, 374, 'K', 2],[165.0, 67, '%', 4],[171.0, 2.1, 'kOe', 4],[178.0, 55, '%', 4],[184.0, 1, 'kOe', 4],[263.0, 350, 'K', 6]

C
###Giant magnetic-field changes in radio-frequency absorption in La$_{0.67}$Sr$_{0.33}$MnO$_3$ near the Curie temperature|B. I. Belevtsev,A. Ya. Kirichenko,N. T. Cherpak,G. V. Golubnichaya,I. G. Maximchuk,E. Yu. Beliayev,A. S. Panfilov,J. Fink-Finowicki###
(886956, 886956)
 The D<missing VAR>C transport properties of and the radio-frequency (R<missing VAR>F) wave absorption(at 2.525 MHz) in a sample of La0.67Sr0.33MnO3 prepared byfloating-zone method are measured.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 2.525, 'MHz', 0],[84.0, 374, 'K', 1],[151.0, 67, '%', 3],[157.0, 2.1, 'kOe', 3],[164.0, 55, '%', 3],[170.0, 1, 'kOe', 3],[249.0, 350, 'K', 5]

F
###Giant magnetic-field changes in radio-frequency absorption in La$_{0.67}$Sr$_{0.33}$MnO$_3$ near the Curie temperature|B. I. Belevtsev,A. Ya. Kirichenko,N. T. Cherpak,G. V. Golubnichaya,I. G. Maximchuk,E. Yu. Beliayev,A. S. Panfilov,J. Fink-Finowicki###
(886974, 886974)
 The D<missing VAR>C transport properties of and the radio-frequency (R<missing VAR>F) wave absorption(at 2.525 MHz) in a sample of La0.67Sr0.33MnO3 prepared byfloating-zone method are measured.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 2.525, 'MHz', 0],[66.0, 374, 'K', 1],[133.0, 67, '%', 3],[139.0, 2.1, 'kOe', 3],[146.0, 55, '%', 3],[152.0, 1, 'kOe', 3],[231.0, 350, 'K', 5]

La0.67Sr0.33MnO3
###Giant magnetic-field changes in radio-frequency absorption in La$_{0.67}$Sr$_{0.33}$MnO$_3$ near the Curie temperature|B. I. Belevtsev,A. Ya. Kirichenko,N. T. Cherpak,G. V. Golubnichaya,I. G. Maximchuk,E. Yu. Beliayev,A. S. Panfilov,J. Fink-Finowicki###
(886995, 887001)
 The D<missing VAR>C transport properties of and the radio-frequency (R<missing VAR>F) wave absorption(at 2.525 MHz) in a sample of La0.67Sr0.33MnO3 prepared byfloating-zone method are measured.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.066,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.134,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 2.525, 'MHz', 0],[39.0, 374, 'K', 1],[106.0, 67, '%', 3],[112.0, 2.1, 'kOe', 3],[119.0, 55, '%', 3],[125.0, 1, 'kOe', 3],[204.0, 350, 'K', 5]

F
###Giant magnetic-field changes in radio-frequency absorption in La$_{0.67}$Sr$_{0.33}$MnO$_3$ near the Curie temperature|B. I. Belevtsev,A. Ya. Kirichenko,N. T. Cherpak,G. V. Golubnichaya,I. G. Maximchuk,E. Yu. Beliayev,A. S. Panfilov,J. Fink-Finowicki###
(887058, 887058)
 Giant temperature and magnetic-field variations in R<missing VAR>Fabsorption are found in the vicinity of Tc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 2.525, 'MHz', 2],[18.0, 374, 'K', 1],[49.0, 67, '%', 1],[55.0, 2.1, 'kOe', 1],[62.0, 55, '%', 1],[68.0, 1, 'kOe', 1],[147.0, 350, 'K', 3]

F
###Giant magnetic-field changes in radio-frequency absorption in La$_{0.67}$Sr$_{0.33}$MnO$_3$ near the Curie temperature|B. I. Belevtsev,A. Ya. Kirichenko,N. T. Cherpak,G. V. Golubnichaya,I. G. Maximchuk,E. Yu. Beliayev,A. S. Panfilov,J. Fink-Finowicki###
(887088, 887088)
 Relative change of the R<missing VAR>Fabsorption in magnetic field (magnetoabsorption) is about 67% in field 2.1 kOeand about 55% in field 1 kOe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 2.525, 'MHz', 3],[48.0, 374, 'K', 2],[19.0, 67, '%', 0],[25.0, 2.1, 'kOe', 0],[32.0, 55, '%', 0],[38.0, 1, 'kOe', 0],[117.0, 350, 'K', 2]

F
###Giant magnetic-field changes in radio-frequency absorption in La$_{0.67}$Sr$_{0.33}$MnO$_3$ near the Curie temperature|B. I. Belevtsev,A. Ya. Kirichenko,N. T. Cherpak,G. V. Golubnichaya,I. G. Maximchuk,E. Yu. Beliayev,A. S. Panfilov,J. Fink-Finowicki###
(887149, 887149)
 This giant magnetoabsorption effect can be usedto develop R<missing VAR>F devices controlled by temperature and low magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 2.525, 'MHz', 4],[109.0, 374, 'K', 3],[42.0, 67, '%', 1],[36.0, 2.1, 'kOe', 1],[29.0, 55, '%', 1],[23.0, 1, 'kOe', 1],[56.0, 350, 'K', 1]

F
###Giant magnetic-field changes in radio-frequency absorption in La$_{0.67}$Sr$_{0.33}$MnO$_3$ near the Curie temperature|B. I. Belevtsev,A. Ya. Kirichenko,N. T. Cherpak,G. V. Golubnichaya,I. G. Maximchuk,E. Yu. Beliayev,A. S. Panfilov,J. Fink-Finowicki###
(887226, 887226)
 The R<missing VAR>F study supplemented with transport, magnetoresistive andmagnetic measurements enables us to discuss the optimal properties of manganitesamples for observation of giant magnetoabsorption in low field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[242.0, 2.525, 'MHz', 6],[186.0, 374, 'K', 5],[119.0, 67, '%', 3],[113.0, 2.1, 'kOe', 3],[106.0, 55, '%', 3],[100.0, 1, 'kOe', 3],[21.0, 350, 'K', 1]

Na0.85CoO2
###Metamagnetic Transition in Na$_{0.85}$CoO$_2$ Single Crystals|J. L. Luo,N. L. Wang,G. T. Liu,D. Wu,X. N. Jing,F. Hu,T. Xiang###
(887298, 887302)
Metamagnetic Transition in Na0.85CoO2 Single Crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5194805194805194,0,0,0.22077922077922077,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2597402597402597,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 20, 'K', 3],[171.0, 8, 'T', 4],[203.0, 14, 'T', 5]

Na0.85CoO2
###Metamagnetic Transition in Na$_{0.85}$CoO$_2$ Single Crystals|J. L. Luo,N. L. Wang,G. T. Liu,D. Wu,X. N. Jing,F. Hu,T. Xiang###
(887335, 887339)
 We report the magnetization, specific heat and transport measurements of highquality Na0.85CoO2 single crystals in applied magnetic fields up to14T<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5194805194805194,0,0,0.22077922077922077,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2597402597402597,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 20, 'K', 2],[134.0, 8, 'T', 3],[166.0, 14, 'T', 4]

In
###Metamagnetic Transition in Na$_{0.85}$CoO$_2$ Single Crystals|J. L. Luo,N. L. Wang,G. T. Liu,D. Wu,X. N. Jing,F. Hu,T. Xiang###
(887362, 887362)
 In high temperatures, the system is in a paramagnetic phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 20, 'K', 1],[111.0, 8, 'T', 2],[143.0, 14, 'T', 3]

Na0.85CoO2
###Metamagnetic Transition in Na$_{0.85}$CoO$_2$ Single Crystals|J. L. Luo,N. L. Wang,G. T. Liu,D. Wu,X. N. Jing,F. Hu,T. Xiang###
(887544, 887548)
 The low temperature magneticphase diagram of Na0.85CoO2 is determined.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5194805194805194,0,0,0.22077922077922077,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2597402597402597,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 20, 'K', 3],[71.0, 8, 'T', 2],[39.0, 14, 'T', 1]

Eu
###Percolation and Colossal Magnetoresistance in Eu-based Hexaborides|G. A. Wigger,C. Beeli,E. Felder,H. R. Ott,A. D. Bianchi,Z. Fisk###
(887882, 887882)
Percolation and Colossal Magnetoresistance in Eu-based Hexaborides.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 5, 'to', 3],[156.0, 10, 'nm', 3],[209.0, 0.27, ',', 5]

Ca
###Percolation and Colossal Magnetoresistance in Eu-based Hexaborides|G. A. Wigger,C. Beeli,E. Felder,H. R. Ott,A. D. Bianchi,Z. Fisk###
(887893, 887893)
 Upon substituting Ca for Eu in the local-moment ferromagnet EuB6, theCurie temperature T<missing VAR>C decreases substantially with increasing dilution of themagnetic sublattice and is completely suppressed for x<missing VAR> leq 0.3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 5, 'to', 2],[145.0, 10, 'nm', 2],[198.0, 0.27, ',', 4]

Eu
###Percolation and Colossal Magnetoresistance in Eu-based Hexaborides|G. A. Wigger,C. Beeli,E. Felder,H. R. Ott,A. D. Bianchi,Z. Fisk###
(887897, 887897)
 Upon substituting Ca for Eu in the local-moment ferromagnet EuB6, theCurie temperature T<missing VAR>C decreases substantially with increasing dilution of themagnetic sublattice and is completely suppressed for x<missing VAR> leq 0.3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 5, 'to', 2],[141.0, 10, 'nm', 2],[194.0, 0.27, ',', 4]

EuB6
###Percolation and Colossal Magnetoresistance in Eu-based Hexaborides|G. A. Wigger,C. Beeli,E. Felder,H. R. Ott,A. D. Bianchi,Z. Fisk###
(887909, 887911)
 Upon substituting Ca for Eu in the local-moment ferromagnet EuB6, theCurie temperature T<missing VAR>C decreases substantially with increasing dilution of themagnetic sublattice and is completely suppressed for x<missing VAR> leq 0.3.
Featurization terminated normally.
0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 5, 'to', 2],[127.0, 10, 'nm', 2],[180.0, 0.27, ',', 4]

C
###Percolation and Colossal Magnetoresistance in Eu-based Hexaborides|G. A. Wigger,C. Beeli,E. Felder,H. R. Ott,A. D. Bianchi,Z. Fisk###
(887922, 887922)
 Upon substituting Ca for Eu in the local-moment ferromagnet EuB6, theCurie temperature T<missing VAR>C decreases substantially with increasing dilution of themagnetic sublattice and is completely suppressed for x<missing VAR> leq 0.3.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 5, 'to', 2],[116.0, 10, 'nm', 2],[169.0, 0.27, ',', 4]

Ca
###Percolation and Colossal Magnetoresistance in Eu-based Hexaborides|G. A. Wigger,C. Beeli,E. Felder,H. R. Ott,A. D. Bianchi,Z. Fisk###
(887962, 887962)
 The Casubstitution leads to significant changes of the electronic properties acrossthe Eux<missing VAR>Ca1-xB6 series.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 5, 'to', 1],[76.0, 10, 'nm', 1],[129.0, 0.27, ',', 3]

Eu
###Percolation and Colossal Magnetoresistance in Eu-based Hexaborides|G. A. Wigger,C. Beeli,E. Felder,H. R. Ott,A. D. Bianchi,Z. Fisk###
(887988, 887988)
 The Casubstitution leads to significant changes of the electronic properties acrossthe Eux<missing VAR>Ca1-xB6 series.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 5, 'to', 1],[50.0, 10, 'nm', 1],[103.0, 0.27, ',', 3]

Ca1-xB6
###Percolation and Colossal Magnetoresistance in Eu-based Hexaborides|G. A. Wigger,C. Beeli,E. Felder,H. R. Ott,A. D. Bianchi,Z. Fisk###
(887990, 887995)
 The Casubstitution leads to significant changes of the electronic properties acrossthe Eux<missing VAR>Ca1-xB6 series.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[42.0, 5, 'to', 1],[43.0, 10, 'nm', 1],[96.0, 0.27, ',', 3]

Eu
###Percolation and Colossal Magnetoresistance in Eu-based Hexaborides|G. A. Wigger,C. Beeli,E. Felder,H. R. Ott,A. D. Bianchi,Z. Fisk###
(888025, 888025)
 Electron microscopy data for x<missing VAR> approx0.27 indicate a phase separation into Eu- and Ca-rich clusters of 5 to 10 nmdiameter, leading to percolation-type phenomena in the electrical transportproperties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 5, 'to', 0],[13.0, 10, 'nm', 0],[66.0, 0.27, ',', 2]

Ca
###Percolation and Colossal Magnetoresistance in Eu-based Hexaborides|G. A. Wigger,C. Beeli,E. Felder,H. R. Ott,A. D. Bianchi,Z. Fisk###
(888030, 888030)
 Electron microscopy data for x<missing VAR> approx0.27 indicate a phase separation into Eu- and Ca-rich clusters of 5 to 10 nmdiameter, leading to percolation-type phenomena in the electrical transportproperties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 5, 'to', 0],[8.0, 10, 'nm', 0],[61.0, 0.27, ',', 2]

C
###Polaronic excitations in CMR manganite films|Ch. Hartinger,F. Mayr,A. Loidl,T. Kopp###
(888483, 888483)
Polaronic excitations in CMR manganite films.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Polaronic excitations in CMR manganite films|Ch. Hartinger,F. Mayr,A. Loidl,T. Kopp###
(888492, 888492)
 In the colossal magnetoresistance manganites polarons have been proposed asthe charge carrier state which localizes across the metal-insulator transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La2
###Polaronic excitations in CMR manganite films|Ch. Hartinger,F. Mayr,A. Loidl,T. Kopp###
(888586, 888587)
 We present an assessmentof measurements which identify polarons in the metallic state ofLa2/3Sr1/3MnO3 (LSMO) and La2/3Ca1/3MnO3 (LCMO) thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr1
###Polaronic excitations in CMR manganite films|Ch. Hartinger,F. Mayr,A. Loidl,T. Kopp###
(888590, 888591)
 We present an assessmentof measurements which identify polarons in the metallic state ofLa2/3Sr1/3MnO3 (LSMO) and La2/3Ca1/3MnO3 (LCMO) thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnO3
###Polaronic excitations in CMR manganite films|Ch. Hartinger,F. Mayr,A. Loidl,T. Kopp###
(888594, 888596)
 We present an assessmentof measurements which identify polarons in the metallic state ofLa2/3Sr1/3MnO3 (LSMO) and La2/3Ca1/3MnO3 (LCMO) thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Polaronic excitations in CMR manganite films|Ch. Hartinger,F. Mayr,A. Loidl,T. Kopp###
(888602, 888602)
 We present an assessmentof measurements which identify polarons in the metallic state ofLa2/3Sr1/3MnO3 (LSMO) and La2/3Ca1/3MnO3 (LCMO) thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La2
###Polaronic excitations in CMR manganite films|Ch. Hartinger,F. Mayr,A. Loidl,T. Kopp###
(888607, 888608)
 We present an assessmentof measurements which identify polarons in the metallic state ofLa2/3Sr1/3MnO3 (LSMO) and La2/3Ca1/3MnO3 (LCMO) thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ca1
###Polaronic excitations in CMR manganite films|Ch. Hartinger,F. Mayr,A. Loidl,T. Kopp###
(888611, 888612)
 We present an assessmentof measurements which identify polarons in the metallic state ofLa2/3Sr1/3MnO3 (LSMO) and La2/3Ca1/3MnO3 (LCMO) thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnO3
###Polaronic excitations in CMR manganite films|Ch. Hartinger,F. Mayr,A. Loidl,T. Kopp###
(888615, 888617)
 We present an assessmentof measurements which identify polarons in the metallic state ofLa2/3Sr1/3MnO3 (LSMO) and La2/3Ca1/3MnO3 (LCMO) thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Polaronic excitations in CMR manganite films|Ch. Hartinger,F. Mayr,A. Loidl,T. Kopp###
(888623, 888623)
 We present an assessmentof measurements which identify polarons in the metallic state ofLa2/3Sr1/3MnO3 (LSMO) and La2/3Ca1/3MnO3 (LCMO) thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Polaronic excitations in CMR manganite films|Ch. Hartinger,F. Mayr,A. Loidl,T. Kopp###
(888710, 888710)
 These polaronic resonances arequalitatively distinct in LSMO and LCMO and we discuss large and small polaronscenarios which have been proposed so far.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Polaronic excitations in CMR manganite films|Ch. Hartinger,F. Mayr,A. Loidl,T. Kopp###
(888717, 888717)
 These polaronic resonances arequalitatively distinct in LSMO and LCMO and we discuss large and small polaronscenarios which have been proposed so far.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Polaronic excitations in CMR manganite films|Ch. Hartinger,F. Mayr,A. Loidl,T. Kopp###
(888771, 888771)
 There is evidence for a largepolaron excitation in LSMO and small polarons in LCMO.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Polaronic excitations in CMR manganite films|Ch. Hartinger,F. Mayr,A. Loidl,T. Kopp###
(888784, 888784)
 There is evidence for a largepolaron excitation in LSMO and small polarons in LCMO.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tl2Mn2O7
###Carrier-Induced Magnetic Circular Dichloism in the Magnetoresistive Pyrochlore Tl2Mn2O7|H. Okamura,T. Koretsune,S. Kimura,T. Nanba,H. Imai,Y. Shimakawa,Y. Kubo###
(888864, 888869)
Carrier-Induced Magnetic Circular Dichloism in the Magnetoresistive Pyrochlore Tl2Mn2O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6363636363636364,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tl2Mn2O7
###Carrier-Induced Magnetic Circular Dichloism in the Magnetoresistive Pyrochlore Tl2Mn2O7|H. Okamura,T. Koretsune,S. Kimura,T. Nanba,H. Imai,Y. Shimakawa,Y. Kubo###
(888911, 888916)
 Infrared magnetic circular dichloism (MCD), or equivalently magneto-opticalKerr effect, has been measured on the Tl2Mn2O7 pyrochlore, which is well knownfor exhibiting a large magnetoresistance around the Curie temperature T<missing VAR>C  120K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6363636363636364,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Carrier-Induced Magnetic Circular Dichloism in the Magnetoresistive Pyrochlore Tl2Mn2O7|H. Okamura,T. Koretsune,S. Kimura,T. Nanba,H. Imai,Y. Shimakawa,Y. Kubo###
(888949, 888949)
 Infrared magnetic circular dichloism (MCD), or equivalently magneto-opticalKerr effect, has been measured on the Tl2Mn2O7 pyrochlore, which is well knownfor exhibiting a large magnetoresistance around the Curie temperature T<missing VAR>C  120K.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Carrier-Induced Magnetic Circular Dichloism in the Magnetoresistive Pyrochlore Tl2Mn2O7|H. Okamura,T. Koretsune,S. Kimura,T. Nanba,H. Imai,Y. Shimakawa,Y. Kubo###
(888955, 888955)
 Infrared magnetic circular dichloism (MCD), or equivalently magneto-opticalKerr effect, has been measured on the Tl2Mn2O7 pyrochlore, which is well knownfor exhibiting a large magnetoresistance around the Curie temperature T<missing VAR>C  120K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tl2Mn2O7
###Carrier-Induced Magnetic Circular Dichloism in the Magnetoresistive Pyrochlore Tl2Mn2O7|H. Okamura,T. Koretsune,S. Kimura,T. Nanba,H. Imai,Y. Shimakawa,Y. Kubo###
(889061, 889066)
 However, contrary to the conventional behaviorof MCD for ferromagnets, the observed MCD of Tl2Mn2O7 grows with the appliedmagnetic field, and not scaled with the internal magnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6363636363636364,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tl2Mn2O7
###Carrier-Induced Magnetic Circular Dichloism in the Magnetoresistive Pyrochlore Tl2Mn2O7|H. Okamura,T. Koretsune,S. Kimura,T. Nanba,H. Imai,Y. Shimakawa,Y. Kubo###
(889171, 889176)
 The absence of a magnetization-scaled MCD indicates aweak spin-orbit coupling of the carriers in Tl2Mn2O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6363636363636364,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tl2Mn2O7
###Carrier-Induced Magnetic Circular Dichloism in the Magnetoresistive Pyrochlore Tl2Mn2O7|H. Okamura,T. Koretsune,S. Kimura,T. Nanba,H. Imai,Y. Shimakawa,Y. Kubo###
(889206, 889211)
 We discuss the presentresults in terms of the microscopic electronic structures of Tl2Mn2O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6363636363636364,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Feasible Nanometric Magnetoresistance Devices|Oded Hod,Roi Baer,Eran Rabani###
(889284, 889284)
 It contains a component that is periodic with an Aharonov-Bohm(AB) period equal to the quantum flux.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Feasible Nanometric Magnetoresistance Devices|Oded Hod,Roi Baer,Eran Rabani###
(889300, 889300)
 In molecular/atomic loops on thenanometer scale, encircling very small areas, the AB period involvesunrealistically huge magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Feasible Nanometric Magnetoresistance Devices|Oded Hod,Roi Baer,Eran Rabani###
(889330, 889330)
 In molecular/atomic loops on thenanometer scale, encircling very small areas, the AB period involvesunrealistically huge magnetic fields.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Feasible Nanometric Magnetoresistance Devices|Oded Hod,Roi Baer,Eran Rabani###
(889473, 889473)
 By controlling thelifetime of the conduction electron through a pre-selected single state that iswell separated from other states due to the quantum confinement effect, wedemonstrate that magnetic fields comparable to one Tesla can be used to switcha nanometric AB device.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La2
###Thermopower peak in phase transition region of (1-x)La$_{2/3}$Ca$_{1/3}$MnO$_{3}$/xYSZ|Wei Liu,Jun Zhao,Chinping Chen,Shousheng Yan,Zhengcai Xia,Sheng Liu###
(889907, 889908)
Thermopower peak in phase transition region of (1-x)La2/3Ca1/3MnO3/x<missing VAR>YSZ<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 0, ',', 1],[98.0, 0.75, '%', 1],[102.0, 1.25, '%', 1],[107.0, 4.5, '%', 1],[111.0, 13, '%', 1],[114.0, 15, '%', 1],[119.0, 80, '%', 1],[147.0, 300, 'K', 1],[152.0, 77, 'K', 1],[186.0, 0, ',', 2],[199.0, 0.0, 'We', 2]

Ca1
###Thermopower peak in phase transition region of (1-x)La$_{2/3}$Ca$_{1/3}$MnO$_{3}$/xYSZ|Wei Liu,Jun Zhao,Chinping Chen,Shousheng Yan,Zhengcai Xia,Sheng Liu###
(889911, 889912)
Thermopower peak in phase transition region of (1-x)La2/3Ca1/3MnO3/x<missing VAR>YSZ<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 0, ',', 1],[94.0, 0.75, '%', 1],[98.0, 1.25, '%', 1],[103.0, 4.5, '%', 1],[107.0, 13, '%', 1],[110.0, 15, '%', 1],[115.0, 80, '%', 1],[143.0, 300, 'K', 1],[148.0, 77, 'K', 1],[182.0, 0, ',', 2],[195.0, 0.0, 'We', 2]

MnO3
###Thermopower peak in phase transition region of (1-x)La$_{2/3}$Ca$_{1/3}$MnO$_{3}$/xYSZ|Wei Liu,Jun Zhao,Chinping Chen,Shousheng Yan,Zhengcai Xia,Sheng Liu###
(889915, 889917)
Thermopower peak in phase transition region of (1-x)La2/3Ca1/3MnO3/x<missing VAR>YSZ<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 0, ',', 1],[89.0, 0.75, '%', 1],[93.0, 1.25, '%', 1],[98.0, 4.5, '%', 1],[102.0, 13, '%', 1],[105.0, 15, '%', 1],[110.0, 80, '%', 1],[138.0, 300, 'K', 1],[143.0, 77, 'K', 1],[177.0, 0, ',', 2],[190.0, 0.0, 'We', 2]

YS
###Thermopower peak in phase transition region of (1-x)La$_{2/3}$Ca$_{1/3}$MnO$_{3}$/xYSZ|Wei Liu,Jun Zhao,Chinping Chen,Shousheng Yan,Zhengcai Xia,Sheng Liu###
(889920, 889921)
Thermopower peak in phase transition region of (1-x)La2/3Ca1/3MnO3/x<missing VAR>YSZ<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 0, ',', 1],[85.0, 0.75, '%', 1],[89.0, 1.25, '%', 1],[94.0, 4.5, '%', 1],[98.0, 13, '%', 1],[101.0, 15, '%', 1],[106.0, 80, '%', 1],[134.0, 300, 'K', 1],[139.0, 77, 'K', 1],[173.0, 0, ',', 2],[186.0, 0.0, 'We', 2]

P
###Thermopower peak in phase transition region of (1-x)La$_{2/3}$Ca$_{1/3}$MnO$_{3}$/xYSZ|Wei Liu,Jun Zhao,Chinping Chen,Shousheng Yan,Zhengcai Xia,Sheng Liu###
(889934, 889934)
 The thermoelectric power (TEP) and the electrical resistivity of theintergranular magnetoresistance (IGMR) composite,(1-x)La2/3Ca1/3MnO3/x<missing VAR>YSZ<missing VAR> (LCMO/YSZ) with x<missing VAR>  0, 0.75%, 1.25%,4.5%, 13% 15% and 80% of the yttria-stabalized zirconia (YSZ), have beenmeasured from 300 K down to 77 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 0, ',', 0],[72.0, 0.75, '%', 0],[76.0, 1.25, '%', 0],[81.0, 4.5, '%', 0],[85.0, 13, '%', 0],[88.0, 15, '%', 0],[93.0, 80, '%', 0],[121.0, 300, 'K', 0],[126.0, 77, 'K', 0],[160.0, 0, ',', 1],[173.0, 0.0, 'We', 1]

I
###Thermopower peak in phase transition region of (1-x)La$_{2/3}$Ca$_{1/3}$MnO$_{3}$/xYSZ|Wei Liu,Jun Zhao,Chinping Chen,Shousheng Yan,Zhengcai Xia,Sheng Liu###
(889955, 889955)
 The thermoelectric power (TEP) and the electrical resistivity of theintergranular magnetoresistance (IGMR) composite,(1-x)La2/3Ca1/3MnO3/x<missing VAR>YSZ<missing VAR> (LCMO/YSZ) with x<missing VAR>  0, 0.75%, 1.25%,4.5%, 13% 15% and 80% of the yttria-stabalized zirconia (YSZ), have beenmeasured from 300 K down to 77 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 0, ',', 0],[51.0, 0.75, '%', 0],[55.0, 1.25, '%', 0],[60.0, 4.5, '%', 0],[64.0, 13, '%', 0],[67.0, 15, '%', 0],[72.0, 80, '%', 0],[100.0, 300, 'K', 0],[105.0, 77, 'K', 0],[139.0, 0, ',', 1],[152.0, 0.0, 'We', 1]

La2
###Thermopower peak in phase transition region of (1-x)La$_{2/3}$Ca$_{1/3}$MnO$_{3}$/xYSZ|Wei Liu,Jun Zhao,Chinping Chen,Shousheng Yan,Zhengcai Xia,Sheng Liu###
(889970, 889971)
 The thermoelectric power (TEP) and the electrical resistivity of theintergranular magnetoresistance (IGMR) composite,(1-x)La2/3Ca1/3MnO3/x<missing VAR>YSZ<missing VAR> (LCMO/YSZ) with x<missing VAR>  0, 0.75%, 1.25%,4.5%, 13% 15% and 80% of the yttria-stabalized zirconia (YSZ), have beenmeasured from 300 K down to 77 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 0, ',', 0],[35.0, 0.75, '%', 0],[39.0, 1.25, '%', 0],[44.0, 4.5, '%', 0],[48.0, 13, '%', 0],[51.0, 15, '%', 0],[56.0, 80, '%', 0],[84.0, 300, 'K', 0],[89.0, 77, 'K', 0],[123.0, 0, ',', 1],[136.0, 0.0, 'We', 1]

Ca1
###Thermopower peak in phase transition region of (1-x)La$_{2/3}$Ca$_{1/3}$MnO$_{3}$/xYSZ|Wei Liu,Jun Zhao,Chinping Chen,Shousheng Yan,Zhengcai Xia,Sheng Liu###
(889974, 889975)
 The thermoelectric power (TEP) and the electrical resistivity of theintergranular magnetoresistance (IGMR) composite,(1-x)La2/3Ca1/3MnO3/x<missing VAR>YSZ<missing VAR> (LCMO/YSZ) with x<missing VAR>  0, 0.75%, 1.25%,4.5%, 13% 15% and 80% of the yttria-stabalized zirconia (YSZ), have beenmeasured from 300 K down to 77 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 0, ',', 0],[31.0, 0.75, '%', 0],[35.0, 1.25, '%', 0],[40.0, 4.5, '%', 0],[44.0, 13, '%', 0],[47.0, 15, '%', 0],[52.0, 80, '%', 0],[80.0, 300, 'K', 0],[85.0, 77, 'K', 0],[119.0, 0, ',', 1],[132.0, 0.0, 'We', 1]

MnO3
###Thermopower peak in phase transition region of (1-x)La$_{2/3}$Ca$_{1/3}$MnO$_{3}$/xYSZ|Wei Liu,Jun Zhao,Chinping Chen,Shousheng Yan,Zhengcai Xia,Sheng Liu###
(889978, 889980)
 The thermoelectric power (TEP) and the electrical resistivity of theintergranular magnetoresistance (IGMR) composite,(1-x)La2/3Ca1/3MnO3/x<missing VAR>YSZ<missing VAR> (LCMO/YSZ) with x<missing VAR>  0, 0.75%, 1.25%,4.5%, 13% 15% and 80% of the yttria-stabalized zirconia (YSZ), have beenmeasured from 300 K down to 77 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 0, ',', 0],[26.0, 0.75, '%', 0],[30.0, 1.25, '%', 0],[35.0, 4.5, '%', 0],[39.0, 13, '%', 0],[42.0, 15, '%', 0],[47.0, 80, '%', 0],[75.0, 300, 'K', 0],[80.0, 77, 'K', 0],[114.0, 0, ',', 1],[127.0, 0.0, 'We', 1]

YS
###Thermopower peak in phase transition region of (1-x)La$_{2/3}$Ca$_{1/3}$MnO$_{3}$/xYSZ|Wei Liu,Jun Zhao,Chinping Chen,Shousheng Yan,Zhengcai Xia,Sheng Liu###
(889983, 889984)
 The thermoelectric power (TEP) and the electrical resistivity of theintergranular magnetoresistance (IGMR) composite,(1-x)La2/3Ca1/3MnO3/x<missing VAR>YSZ<missing VAR> (LCMO/YSZ) with x<missing VAR>  0, 0.75%, 1.25%,4.5%, 13% 15% and 80% of the yttria-stabalized zirconia (YSZ), have beenmeasured from 300 K down to 77 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 0, ',', 0],[22.0, 0.75, '%', 0],[26.0, 1.25, '%', 0],[31.0, 4.5, '%', 0],[35.0, 13, '%', 0],[38.0, 15, '%', 0],[43.0, 80, '%', 0],[71.0, 300, 'K', 0],[76.0, 77, 'K', 0],[110.0, 0, ',', 1],[123.0, 0.0, 'We', 1]

O/YS
###Thermopower peak in phase transition region of (1-x)La$_{2/3}$Ca$_{1/3}$MnO$_{3}$/xYSZ|Wei Liu,Jun Zhao,Chinping Chen,Shousheng Yan,Zhengcai Xia,Sheng Liu###
(889991, 889994)
 The thermoelectric power (TEP) and the electrical resistivity of theintergranular magnetoresistance (IGMR) composite,(1-x)La2/3Ca1/3MnO3/x<missing VAR>YSZ<missing VAR> (LCMO/YSZ) with x<missing VAR>  0, 0.75%, 1.25%,4.5%, 13% 15% and 80% of the yttria-stabalized zirconia (YSZ), have beenmeasured from 300 K down to 77 K.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[9.0, 0, ',', 0],[12.0, 0.75, '%', 0],[16.0, 1.25, '%', 0],[21.0, 4.5, '%', 0],[25.0, 13, '%', 0],[28.0, 15, '%', 0],[33.0, 80, '%', 0],[61.0, 300, 'K', 0],[66.0, 77, 'K', 0],[100.0, 0, ',', 1],[113.0, 0.0, 'We', 1]

YS
###Thermopower peak in phase transition region of (1-x)La$_{2/3}$Ca$_{1/3}$MnO$_{3}$/xYSZ|Wei Liu,Jun Zhao,Chinping Chen,Shousheng Yan,Zhengcai Xia,Sheng Liu###
(890041, 890042)
 The thermoelectric power (TEP) and the electrical resistivity of theintergranular magnetoresistance (IGMR) composite,(1-x)La2/3Ca1/3MnO3/x<missing VAR>YSZ<missing VAR> (LCMO/YSZ) with x<missing VAR>  0, 0.75%, 1.25%,4.5%, 13% 15% and 80% of the yttria-stabalized zirconia (YSZ), have beenmeasured from 300 K down to 77 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 0, ',', 0],[35.0, 0.75, '%', 0],[31.0, 1.25, '%', 0],[26.0, 4.5, '%', 0],[22.0, 13, '%', 0],[19.0, 15, '%', 0],[14.0, 80, '%', 0],[13.0, 300, 'K', 0],[18.0, 77, 'K', 0],[52.0, 0, ',', 1],[65.0, 0.0, 'We', 1]

P
###Thermopower peak in phase transition region of (1-x)La$_{2/3}$Ca$_{1/3}$MnO$_{3}$/xYSZ|Wei Liu,Jun Zhao,Chinping Chen,Shousheng Yan,Zhengcai Xia,Sheng Liu###
(890067, 890067)
 Pronounced TEP peak appears during the phasetransition for the samples of x<missing VAR> > 0, while not observed for x<missing VAR>  0. We suggestthat this is due to the magnetic structure variation induced by the latticestrain which is resulting from the LCMO/YSZ<missing VAR> boundary layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 0, ',', 1],[61.0, 0.75, '%', 1],[57.0, 1.25, '%', 1],[52.0, 4.5, '%', 1],[48.0, 13, '%', 1],[45.0, 15, '%', 1],[40.0, 80, '%', 1],[12.0, 300, 'K', 1],[7.0, 77, 'K', 1],[27.0, 0, ',', 0],[40.0, 0.0, 'We', 0]

O/YS
###Thermopower peak in phase transition region of (1-x)La$_{2/3}$Ca$_{1/3}$MnO$_{3}$/xYSZ|Wei Liu,Jun Zhao,Chinping Chen,Shousheng Yan,Zhengcai Xia,Sheng Liu###
(890154, 890157)
 Pronounced TEP peak appears during the phasetransition for the samples of x<missing VAR> > 0, while not observed for x<missing VAR>  0. We suggestthat this is due to the magnetic structure variation induced by the latticestrain which is resulting from the LCMO/YSZ<missing VAR> boundary layers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[151.0, 0, ',', 1],[148.0, 0.75, '%', 1],[144.0, 1.25, '%', 1],[139.0, 4.5, '%', 1],[135.0, 13, '%', 1],[132.0, 15, '%', 1],[127.0, 80, '%', 1],[99.0, 300, 'K', 1],[94.0, 77, 'K', 1],[60.0, 0, ',', 0],[47.0, 0.0, 'We', 0]

C
###Thermopower peak in phase transition region of (1-x)La$_{2/3}$Ca$_{1/3}$MnO$_{3}$/xYSZ|Wei Liu,Jun Zhao,Chinping Chen,Shousheng Yan,Zhengcai Xia,Sheng Liu###
(890196, 890196)
 The transitionwidth in temperature derived from d<missing VAR>chi/dT, with chi being the AC magneticsusceptibility, supports this interpretation.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[193.0, 0, ',', 2],[190.0, 0.75, '%', 2],[186.0, 1.25, '%', 2],[181.0, 4.5, '%', 2],[177.0, 13, '%', 2],[174.0, 15, '%', 2],[169.0, 80, '%', 2],[141.0, 300, 'K', 2],[136.0, 77, 'K', 2],[102.0, 0, ',', 1],[89.0, 0.0, 'We', 1]

In
###Reorientation in Antiferromagnetic Multilayers: Spin-Flop Transition and Surface Effects|U. K. Roessler,A. N. Bogdanov###
(890287, 890287)
 In the last yearsintensive experimental investigations of these artificial antiferromagnets haverevealed a large variety of surface induced reorientational effects and otherremarkable phenomena unknown in other magnetic materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Reorientation in Antiferromagnetic Multilayers: Spin-Flop Transition and Surface Effects|U. K. Roessler,A. N. Bogdanov###
(890351, 890351)
 In this paper wereview and generalize theoretical results, which enable a consistentdescription of the complex magnetization processes in antiferromagneticmultilayers, and we explain the responsible physical mechanism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Reorientation in Antiferromagnetic Multilayers: Spin-Flop Transition and Surface Effects|U. K. Roessler,A. N. Bogdanov###
(890446, 890446)
In particular, our results resolve the long standing problem of a surfacespin-flop in antiferromagnetic layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/Cr
###Reorientation in Antiferromagnetic Multilayers: Spin-Flop Transition and Surface Effects|U. K. Roessler,A. N. Bogdanov###
(890510, 890512)
 This explains the different appearanceof field-driven reorientation transitions in systems like Fe/Cr (001) and (211)superlattices, and in [CoPt]/Ru multilayers with strong perpendicularanisotropy.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Sr4Ru3O10
###Electronic phase separation in the itinerant metamagnetic transition of Sr$_4$Ru$_3$O$_{10}$|Zhiqiang Mao,Meng Zhou,Joe Hooper,Vladimir Golub,Charles J. O'Connor###
(890577, 890582)
Electronic phase separation in the itinerant metamagnetic transition of Sr4Ru3O10.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5882352941176471,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23529411764705882,0,0,0,0,0,0.17647058823529413,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr4Ru3O10
###Electronic phase separation in the itinerant metamagnetic transition of Sr$_4$Ru$_3$O$_{10}$|Zhiqiang Mao,Meng Zhou,Joe Hooper,Vladimir Golub,Charles J. O'Connor###
(890591, 890596)
 Triple-layered ruthenate Sr4Ru3O10 shows a first-order itinerantmetamagnetic transition for in-plane magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5882352941176471,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23529411764705882,0,0,0,0,0,0.17647058823529413,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(H)
###Electronic phase separation in the itinerant metamagnetic transition of Sr$_4$Ru$_3$O$_{10}$|Zhiqiang Mao,Meng Zhou,Joe Hooper,Vladimir Golub,Charles J. O'Connor###
(890667, 890669)
 The in-plane magnetoresistivity rhoab(H) exhibitsultrasharp steps as the magnetic field sweeps down through the transition.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SWCN
###Magnetoresistance Devices Based on Single Walled Carbon Nanotubes|Oded Hod,Eran Rabani,Roi Baer###
(890921, 890924)
 The proposeddevice is made of a short single-walled carbon nanotube (SWCNT) placed on asubstrate and coupled to a tip.
Featurization terminated normally.
0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SWCN
###Magnetoresistance Devices Based on Single Walled Carbon Nanotubes|Oded Hod,Eran Rabani,Roi Baer###
(891024, 891027)
 We find that the circumference conductance is sensitive to magneticfields threading the SWCNT<missing VAR> due to the Aharonov-Bohm effect, and show that byretracting the tip, so that its coupling to the SWCNT<missing VAR> is reduced, very highsensitivity to the threading magnetic field develops.
Featurization terminated normally.
0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SWCN
###Magnetoresistance Devices Based on Single Walled Carbon Nanotubes|Oded Hod,Eran Rabani,Roi Baer###
(891071, 891074)
 We find that the circumference conductance is sensitive to magneticfields threading the SWCNT<missing VAR> due to the Aharonov-Bohm effect, and show that byretracting the tip, so that its coupling to the SWCNT<missing VAR> is reduced, very highsensitivity to the threading magnetic field develops.
Featurization terminated normally.
0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La2
###Large LFMR observed in twinned La2/3Ca1/3MnO3 thin films epitaxially grown on YSZ-buffered SOI substrates|J. Li,P. Wang,J. Y. Xiang,X. H. Zhu,W. Peng,Y. F. Chen,D. N. Zheng,Z. W. Li###
(891216, 891217)
Large LFMR observed in twinned La2/3Ca1/3MnO3 thin films epitaxially grown on YSZ<missing VAR>-buffered SOI substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[283.0, 20, '%', 5],[301.0, 50, 'K', 5]

Ca1
###Large LFMR observed in twinned La2/3Ca1/3MnO3 thin films epitaxially grown on YSZ-buffered SOI substrates|J. Li,P. Wang,J. Y. Xiang,X. H. Zhu,W. Peng,Y. F. Chen,D. N. Zheng,Z. W. Li###
(891220, 891221)
Large LFMR observed in twinned La2/3Ca1/3MnO3 thin films epitaxially grown on YSZ<missing VAR>-buffered SOI substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[279.0, 20, '%', 5],[297.0, 50, 'K', 5]

MnO3
###Large LFMR observed in twinned La2/3Ca1/3MnO3 thin films epitaxially grown on YSZ-buffered SOI substrates|J. Li,P. Wang,J. Y. Xiang,X. H. Zhu,W. Peng,Y. F. Chen,D. N. Zheng,Z. W. Li###
(891224, 891226)
Large LFMR observed in twinned La2/3Ca1/3MnO3 thin films epitaxially grown on YSZ<missing VAR>-buffered SOI substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[274.0, 20, '%', 5],[292.0, 50, 'K', 5]

YS
###Large LFMR observed in twinned La2/3Ca1/3MnO3 thin films epitaxially grown on YSZ-buffered SOI substrates|J. Li,P. Wang,J. Y. Xiang,X. H. Zhu,W. Peng,Y. F. Chen,D. N. Zheng,Z. W. Li###
(891238, 891239)
Large LFMR observed in twinned La2/3Ca1/3MnO3 thin films epitaxially grown on YSZ<missing VAR>-buffered SOI substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[261.0, 20, '%', 5],[279.0, 50, 'K', 5]

SOI
###Large LFMR observed in twinned La2/3Ca1/3MnO3 thin films epitaxially grown on YSZ-buffered SOI substrates|J. Li,P. Wang,J. Y. Xiang,X. H. Zhu,W. Peng,Y. F. Chen,D. N. Zheng,Z. W. Li###
(891244, 891246)
Large LFMR observed in twinned La2/3Ca1/3MnO3 thin films epitaxially grown on YSZ<missing VAR>-buffered SOI substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[254.0, 20, '%', 5],[272.0, 50, 'K', 5]

La2
###Large LFMR observed in twinned La2/3Ca1/3MnO3 thin films epitaxially grown on YSZ-buffered SOI substrates|J. Li,P. Wang,J. Y. Xiang,X. H. Zhu,W. Peng,Y. F. Chen,D. N. Zheng,Z. W. Li###
(891251, 891252)
 La2/3Ca1/3MnO3 thin films have been grown on yttria-stabilized zirconia (YSZ)buffered silicon-on-insulator (SOI) substrate by the pulsed laser depositiontechnique.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[248.0, 20, '%', 4],[266.0, 50, 'K', 4]

Ca1
###Large LFMR observed in twinned La2/3Ca1/3MnO3 thin films epitaxially grown on YSZ-buffered SOI substrates|J. Li,P. Wang,J. Y. Xiang,X. H. Zhu,W. Peng,Y. F. Chen,D. N. Zheng,Z. W. Li###
(891255, 891256)
 La2/3Ca1/3MnO3 thin films have been grown on yttria-stabilized zirconia (YSZ)buffered silicon-on-insulator (SOI) substrate by the pulsed laser depositiontechnique.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[244.0, 20, '%', 4],[262.0, 50, 'K', 4]

MnO3
###Large LFMR observed in twinned La2/3Ca1/3MnO3 thin films epitaxially grown on YSZ-buffered SOI substrates|J. Li,P. Wang,J. Y. Xiang,X. H. Zhu,W. Peng,Y. F. Chen,D. N. Zheng,Z. W. Li###
(891259, 891261)
 La2/3Ca1/3MnO3 thin films have been grown on yttria-stabilized zirconia (YSZ)buffered silicon-on-insulator (SOI) substrate by the pulsed laser depositiontechnique.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[239.0, 20, '%', 4],[257.0, 50, 'K', 4]

YS
###Large LFMR observed in twinned La2/3Ca1/3MnO3 thin films epitaxially grown on YSZ-buffered SOI substrates|J. Li,P. Wang,J. Y. Xiang,X. H. Zhu,W. Peng,Y. F. Chen,D. N. Zheng,Z. W. Li###
(891282, 891283)
 La2/3Ca1/3MnO3 thin films have been grown on yttria-stabilized zirconia (YSZ)buffered silicon-on-insulator (SOI) substrate by the pulsed laser depositiontechnique.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[217.0, 20, '%', 4],[235.0, 50, 'K', 4]

(SOI)
###Large LFMR observed in twinned La2/3Ca1/3MnO3 thin films epitaxially grown on YSZ-buffered SOI substrates|J. Li,P. Wang,J. Y. Xiang,X. H. Zhu,W. Peng,Y. F. Chen,D. N. Zheng,Z. W. Li###
(891296, 891300)
 La2/3Ca1/3MnO3 thin films have been grown on yttria-stabilized zirconia (YSZ)buffered silicon-on-insulator (SOI) substrate by the pulsed laser depositiontechnique.
Featurization successful!
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[200.0, 20, '%', 4],[218.0, 50, 'K', 4]

YS
###Large LFMR observed in twinned La2/3Ca1/3MnO3 thin films epitaxially grown on YSZ-buffered SOI substrates|J. Li,P. Wang,J. Y. Xiang,X. H. Zhu,W. Peng,Y. F. Chen,D. N. Zheng,Z. W. Li###
(891338, 891339)
 While full cube-on-cube epitaxy was achieved for the YSZ<missing VAR> layer, thetop manganite layer was multi-domain-oriented, with a coexistence ofcube-on-cube and cube-on-diagonal epitaxy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 20, '%', 3],[179.0, 50, 'K', 3]

As
###Large LFMR observed in twinned La2/3Ca1/3MnO3 thin films epitaxially grown on YSZ-buffered SOI substrates|J. Li,P. Wang,J. Y. Xiang,X. H. Zhu,W. Peng,Y. F. Chen,D. N. Zheng,Z. W. Li###
(891443, 891443)
 As a result, aquite large low-field magnetoresistance (LFMR) based on spin-dependenttunnelling was observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 20, '%', 1],[75.0, 50, 'K', 1]

I
###Hysteresis in the quantum Hall regimes in electron double quantum well structures|W. Pan,J. L. Reno,J. A. Simmons###
(891800, 891800)
Furthermore, we observe that hysteresis is generally stronger in the eveninteger quantum Hall effect (IQHE) regime than in the odd-IQHE regime.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Hysteresis in the quantum Hall regimes in electron double quantum well structures|W. Pan,J. L. Reno,J. A. Simmons###
(891816, 891816)
Furthermore, we observe that hysteresis is generally stronger in the eveninteger quantum Hall effect (IQHE) regime than in the odd-IQHE regime.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Hysteresis in the quantum Hall regimes in electron double quantum well structures|W. Pan,J. L. Reno,J. A. Simmons###
(891853, 891853)
 This, weargue, is due to a larger energy gap for an even-IQHE state, determined by theLandau level separation, than that for an odd-IQHE state, determined by theZeeman splitting.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Hysteresis in the quantum Hall regimes in electron double quantum well structures|W. Pan,J. L. Reno,J. A. Simmons###
(891885, 891885)
 This, weargue, is due to a larger energy gap for an even-IQHE state, determined by theLandau level separation, than that for an odd-IQHE state, determined by theZeeman splitting.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

U
###Recent Advances in Unconventional Density Waves|Balázs Dóra,Kazumi Maki,Attila Virosztek###
(891933, 891933)
 Unconventional density wave (UD<missing VAR>W) has been speculated as a possibleelectronic ground state in excitonic insulator in 1968. Recent surge ofinterest in UD<missing VAR>W is partly due to the proposal that the pseudogap phase in highTc cuprate superconductors is d<missing VAR>-wave density wave (d-DW).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 1968.0, 'Recent', 0]

W
###Recent Advances in Unconventional Density Waves|Balázs Dóra,Kazumi Maki,Attila Virosztek###
(891935, 891935)
 Unconventional density wave (UD<missing VAR>W) has been speculated as a possibleelectronic ground state in excitonic insulator in 1968. Recent surge ofinterest in UD<missing VAR>W is partly due to the proposal that the pseudogap phase in highTc cuprate superconductors is d<missing VAR>-wave density wave (d-DW).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 1968.0, 'Recent', 0]

U
###Recent Advances in Unconventional Density Waves|Balázs Dóra,Kazumi Maki,Attila Virosztek###
(891975, 891975)
 Unconventional density wave (UD<missing VAR>W) has been speculated as a possibleelectronic ground state in excitonic insulator in 1968. Recent surge ofinterest in UD<missing VAR>W is partly due to the proposal that the pseudogap phase in highTc cuprate superconductors is d<missing VAR>-wave density wave (d-DW).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 1968.0, 'Recent', 0]

W
###Recent Advances in Unconventional Density Waves|Balázs Dóra,Kazumi Maki,Attila Virosztek###
(891977, 891977)
 Unconventional density wave (UD<missing VAR>W) has been speculated as a possibleelectronic ground state in excitonic insulator in 1968. Recent surge ofinterest in UD<missing VAR>W is partly due to the proposal that the pseudogap phase in highTc cuprate superconductors is d<missing VAR>-wave density wave (d-DW).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 1968.0, 'Recent', 0]

W
###Recent Advances in Unconventional Density Waves|Balázs Dóra,Kazumi Maki,Attila Virosztek###
(892025, 892025)
 Unconventional density wave (UD<missing VAR>W) has been speculated as a possibleelectronic ground state in excitonic insulator in 1968. Recent surge ofinterest in UD<missing VAR>W is partly due to the proposal that the pseudogap phase in highTc cuprate superconductors is d<missing VAR>-wave density wave (d-DW).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 1968.0, 'Recent', 0]

U
###Recent Advances in Unconventional Density Waves|Balázs Dóra,Kazumi Maki,Attila Virosztek###
(892046, 892046)
  Here we review our recent works on UD<missing VAR>W within the framework of mean fieldtheory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 1968.0, 'Recent', 1]

W
###Recent Advances in Unconventional Density Waves|Balázs Dóra,Kazumi Maki,Attila Virosztek###
(892048, 892048)
  Here we review our recent works on UD<missing VAR>W within the framework of mean fieldtheory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 1968.0, 'Recent', 1]

In
###Recent Advances in Unconventional Density Waves|Balázs Dóra,Kazumi Maki,Attila Virosztek###
(892066, 892066)
 In particular we have shown that many properties of the low temperaturephase (LTP) in alpha-(BEDT-TTF)2M<missing VAR>Hg(SCN)4 with M<missing VAR>K, Rb and Tl are wellcharacterized in terms of unconventional charge density wave (UCD<missing VAR>W).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 1968.0, 'Recent', 2]

P
###Recent Advances in Unconventional Density Waves|Balázs Dóra,Kazumi Maki,Attila Virosztek###
(892096, 892096)
 In particular we have shown that many properties of the low temperaturephase (LTP) in alpha-(BEDT-TTF)2M<missing VAR>Hg(SCN)4 with M<missing VAR>K, Rb and Tl are wellcharacterized in terms of unconventional charge density wave (UCD<missing VAR>W).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 1968.0, 'Recent', 2]

B
###Recent Advances in Unconventional Density Waves|Balázs Dóra,Kazumi Maki,Attila Virosztek###
(892104, 892104)
 In particular we have shown that many properties of the low temperaturephase (LTP) in alpha-(BEDT-TTF)2M<missing VAR>Hg(SCN)4 with M<missing VAR>K, Rb and Tl are wellcharacterized in terms of unconventional charge density wave (UCD<missing VAR>W).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 1968.0, 'Recent', 2]

F
###Recent Advances in Unconventional Density Waves|Balázs Dóra,Kazumi Maki,Attila Virosztek###
(892111, 892111)
 In particular we have shown that many properties of the low temperaturephase (LTP) in alpha-(BEDT-TTF)2M<missing VAR>Hg(SCN)4 with M<missing VAR>K, Rb and Tl are wellcharacterized in terms of unconventional charge density wave (UCD<missing VAR>W).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 1968.0, 'Recent', 2]

Hg(SCN)4
###Recent Advances in Unconventional Density Waves|Balázs Dóra,Kazumi Maki,Attila Virosztek###
(892115, 892121)
 In particular we have shown that many properties of the low temperaturephase (LTP) in alpha-(BEDT-TTF)2M<missing VAR>Hg(SCN)4 with M<missing VAR>K, Rb and Tl are wellcharacterized in terms of unconventional charge density wave (UCD<missing VAR>W).
Featurization terminated normally.
0,0,0,0,0,0.3076923076923077,0.3076923076923077,0,0,0,0,0,0,0,0,0.3076923076923077,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 1968.0, 'Recent', 2]

K
###Recent Advances in Unconventional Density Waves|Balázs Dóra,Kazumi Maki,Attila Virosztek###
(892126, 892126)
 In particular we have shown that many properties of the low temperaturephase (LTP) in alpha-(BEDT-TTF)2M<missing VAR>Hg(SCN)4 with M<missing VAR>K, Rb and Tl are wellcharacterized in terms of unconventional charge density wave (UCD<missing VAR>W).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 1968.0, 'Recent', 2]

Rb
###Recent Advances in Unconventional Density Waves|Balázs Dóra,Kazumi Maki,Attila Virosztek###
(892129, 892129)
 In particular we have shown that many properties of the low temperaturephase (LTP) in alpha-(BEDT-TTF)2M<missing VAR>Hg(SCN)4 with M<missing VAR>K, Rb and Tl are wellcharacterized in terms of unconventional charge density wave (UCD<missing VAR>W).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 1968.0, 'Recent', 2]

Tl
###Recent Advances in Unconventional Density Waves|Balázs Dóra,Kazumi Maki,Attila Virosztek###
(892133, 892133)
 In particular we have shown that many properties of the low temperaturephase (LTP) in alpha-(BEDT-TTF)2M<missing VAR>Hg(SCN)4 with M<missing VAR>K, Rb and Tl are wellcharacterized in terms of unconventional charge density wave (UCD<missing VAR>W).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 1968.0, 'Recent', 2]

UC
###Recent Advances in Unconventional Density Waves|Balázs Dóra,Kazumi Maki,Attila Virosztek###
(892157, 892158)
 In particular we have shown that many properties of the low temperaturephase (LTP) in alpha-(BEDT-TTF)2M<missing VAR>Hg(SCN)4 with M<missing VAR>K, Rb and Tl are wellcharacterized in terms of unconventional charge density wave (UCD<missing VAR>W).
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
[193.0, 1968.0, 'Recent', 2]

W
###Recent Advances in Unconventional Density Waves|Balázs Dóra,Kazumi Maki,Attila Virosztek###
(892160, 892160)
 In particular we have shown that many properties of the low temperaturephase (LTP) in alpha-(BEDT-TTF)2M<missing VAR>Hg(SCN)4 with M<missing VAR>K, Rb and Tl are wellcharacterized in terms of unconventional charge density wave (UCD<missing VAR>W).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[196.0, 1968.0, 'Recent', 2]

In
###Recent Advances in Unconventional Density Waves|Balázs Dóra,Kazumi Maki,Attila Virosztek###
(892164, 892164)
 In thisidentification the Landau quantization of the quasiparticle motion in amagnetic field (the Nersesyan effect) plays the crucial role.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[200.0, 1968.0, 'Recent', 3]

U
###Recent Advances in Unconventional Density Waves|Balázs Dóra,Kazumi Maki,Attila Virosztek###
(892243, 892243)
 Indeed theangular dependent magnetoresistance and the negative giant Nernst effect aretwo hallmarks of UD<missing VAR>W.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[279.0, 1968.0, 'Recent', 4]

W
###Recent Advances in Unconventional Density Waves|Balázs Dóra,Kazumi Maki,Attila Virosztek###
(892245, 892245)
 Indeed theangular dependent magnetoresistance and the negative giant Nernst effect aretwo hallmarks of UD<missing VAR>W.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[281.0, 1968.0, 'Recent', 4]

(Fe3O4)
###Room temperature tunneling magnetoresistance in magnetite based junctions: Influence of tunneling barrier|D. Reisinger,P. Majewski,M. Opel,L. Alff,R. Gross###
(892283, 892288)
 Magnetite (Fe3O4) based tunnel junctions with turret/mesa structure have beeninvestigated for different barrier materials (SrTiO3, NdGaO3, MgO, SiO2, andAl2O(3-x)).
Featurization successful!
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 5, '%', 1]

SrTiO3
###Room temperature tunneling magnetoresistance in magnetite based junctions: Influence of tunneling barrier|D. Reisinger,P. Majewski,M. Opel,L. Alff,R. Gross###
(892320, 892323)
 Magnetite (Fe3O4) based tunnel junctions with turret/mesa structure have beeninvestigated for different barrier materials (SrTiO3, NdGaO3, MgO, SiO2, andAl2O(3-x)).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 5, '%', 1]

NdGaO3
###Room temperature tunneling magnetoresistance in magnetite based junctions: Influence of tunneling barrier|D. Reisinger,P. Majewski,M. Opel,L. Alff,R. Gross###
(892326, 892329)
 Magnetite (Fe3O4) based tunnel junctions with turret/mesa structure have beeninvestigated for different barrier materials (SrTiO3, NdGaO3, MgO, SiO2, andAl2O(3-x)).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 5, '%', 1]

MgO
###Room temperature tunneling magnetoresistance in magnetite based junctions: Influence of tunneling barrier|D. Reisinger,P. Majewski,M. Opel,L. Alff,R. Gross###
(892332, 892333)
 Magnetite (Fe3O4) based tunnel junctions with turret/mesa structure have beeninvestigated for different barrier materials (SrTiO3, NdGaO3, MgO, SiO2, andAl2O(3-x)).
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 5, '%', 1]

SiO2
###Room temperature tunneling magnetoresistance in magnetite based junctions: Influence of tunneling barrier|D. Reisinger,P. Majewski,M. Opel,L. Alff,R. Gross###
(892336, 892338)
 Magnetite (Fe3O4) based tunnel junctions with turret/mesa structure have beeninvestigated for different barrier materials (SrTiO3, NdGaO3, MgO, SiO2, andAl2O(3-x)).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 5, '%', 1]

O(3-x)
###Room temperature tunneling magnetoresistance in magnetite based junctions: Influence of tunneling barrier|D. Reisinger,P. Majewski,M. Opel,L. Alff,R. Gross###
(892346, 892351)
 Magnetite (Fe3O4) based tunnel junctions with turret/mesa structure have beeninvestigated for different barrier materials (SrTiO3, NdGaO3, MgO, SiO2, andAl2O(3-x)).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[58.0, 5, '%', 1]

Ni
###Room temperature tunneling magnetoresistance in magnetite based junctions: Influence of tunneling barrier|D. Reisinger,P. Majewski,M. Opel,L. Alff,R. Gross###
(892361, 892361)
 Junctions with a Ni counter electrode and an aluminium oxidebarrier showed reproducibly a tunneling magnetoresistance (TMR) effect at roomtemperature of up to 5% with almost ideal switching behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 5, '%', 0]

Fe3O4
###Room temperature tunneling magnetoresistance in magnetite based junctions: Influence of tunneling barrier|D. Reisinger,P. Majewski,M. Opel,L. Alff,R. Gross###
(892446, 892449)
 This number onlypartially reflects the intrinsic high spin polarization of Fe3O4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 5, '%', 1]

SiO2
###Room temperature tunneling magnetoresistance in magnetite based junctions: Influence of tunneling barrier|D. Reisinger,P. Majewski,M. Opel,L. Alff,R. Gross###
(892483, 892485)
 Only SiO2 and Al2O(3-x) barriers provide magnetically decoupledelectrodes as necessary for sharp switching.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 5, '%', 3]

Al2O(3-x)
###Room temperature tunneling magnetoresistance in magnetite based junctions: Influence of tunneling barrier|D. Reisinger,P. Majewski,M. Opel,L. Alff,R. Gross###
(892489, 892496)
 Only SiO2 and Al2O(3-x) barriers provide magnetically decoupledelectrodes as necessary for sharp switching.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[80.0, 5, '%', 3]

Co
###Correlation between tunneling magnetoresistance and magnetization in dipolar coupled nanoparticle arrays|D. Kechrakos,K. N. Trohidou###
(893018, 893018)
 The relation of our simulations to recent TMR measurements inself-assembled Co nanoparticle arrays is discussed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La1-x
###Insulator-metal transition and the magnetic phase diagram of La1-xTexMnO3|J. Yang,W. H. Song,Y. Q. Ma,R. L. Zhang,B. C. Zhao,Z. G. Sheng,G. H. Zheng,J. M. Dai,Y. P. Sun###
(893055, 893058)
Insulator-metal transition and the magnetic phase diagram of La1-xTexMnO3.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

MnO3
###Insulator-metal transition and the magnetic phase diagram of La1-xTexMnO3|J. Yang,W. H. Song,Y. Q. Ma,R. L. Zhang,B. C. Zhao,Z. G. Sheng,G. H. Zheng,J. M. Dai,Y. P. Sun###
(893060, 893062)
Insulator-metal transition and the magnetic phase diagram of La1-xTexMnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La1-x
###Insulator-metal transition and the magnetic phase diagram of La1-xTexMnO3|J. Yang,W. H. Song,Y. Q. Ma,R. L. Zhang,B. C. Zhao,Z. G. Sheng,G. H. Zheng,J. M. Dai,Y. P. Sun###
(893087, 893090)
 The structural, electrical transport and magnetic properties of perovskiteoxides La1-xTexMnO3 have been investigated and thus the magnetic phase diagramof La1-xTexMnO3 compounds as a function of temperature and the doping level x<missing VAR>has been obtained.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

MnO3
###Insulator-metal transition and the magnetic phase diagram of La1-xTexMnO3|J. Yang,W. H. Song,Y. Q. Ma,R. L. Zhang,B. C. Zhao,Z. G. Sheng,G. H. Zheng,J. M. Dai,Y. P. Sun###
(893092, 893094)
 The structural, electrical transport and magnetic properties of perovskiteoxides La1-xTexMnO3 have been investigated and thus the magnetic phase diagramof La1-xTexMnO3 compounds as a function of temperature and the doping level x<missing VAR>has been obtained.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La1-x
###Insulator-metal transition and the magnetic phase diagram of La1-xTexMnO3|J. Yang,W. H. Song,Y. Q. Ma,R. L. Zhang,B. C. Zhao,Z. G. Sheng,G. H. Zheng,J. M. Dai,Y. P. Sun###
(893117, 893120)
 The structural, electrical transport and magnetic properties of perovskiteoxides La1-xTexMnO3 have been investigated and thus the magnetic phase diagramof La1-xTexMnO3 compounds as a function of temperature and the doping level x<missing VAR>has been obtained.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

MnO3
###Insulator-metal transition and the magnetic phase diagram of La1-xTexMnO3|J. Yang,W. H. Song,Y. Q. Ma,R. L. Zhang,B. C. Zhao,Z. G. Sheng,G. H. Zheng,J. M. Dai,Y. P. Sun###
(893122, 893124)
 The structural, electrical transport and magnetic properties of perovskiteoxides La1-xTexMnO3 have been investigated and thus the magnetic phase diagramof La1-xTexMnO3 compounds as a function of temperature and the doping level x<missing VAR>has been obtained.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Insulator-metal transition and the magnetic phase diagram of La1-xTexMnO3|J. Yang,W. H. Song,Y. Q. Ma,R. L. Zhang,B. C. Zhao,Z. G. Sheng,G. H. Zheng,J. M. Dai,Y. P. Sun###
(893176, 893176)
 All samples have rhombohedral structure and undergoparamagnetic-ferromagnetic (PM<missing VAR>-FM) transition accompanied with metal-insulatortransition (MIT).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Insulator-metal transition and the magnetic phase diagram of La1-xTexMnO3|J. Yang,W. H. Song,Y. Q. Ma,R. L. Zhang,B. C. Zhao,Z. G. Sheng,G. H. Zheng,J. M. Dai,Y. P. Sun###
(893179, 893179)
 All samples have rhombohedral structure and undergoparamagnetic-ferromagnetic (PM<missing VAR>-FM) transition accompanied with metal-insulatortransition (MIT).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(CO)
###Insulator-metal transition and the magnetic phase diagram of La1-xTexMnO3|J. Yang,W. H. Song,Y. Q. Ma,R. L. Zhang,B. C. Zhao,Z. G. Sheng,G. H. Zheng,J. M. Dai,Y. P. Sun###
(893211, 893214)
 Whereas a charge ordering (CO) transition begins to appear atfor the sample with x<missing VAR>0.60.
Featurization successful!
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Te
###Insulator-metal transition and the magnetic phase diagram of La1-xTexMnO3|J. Yang,W. H. Song,Y. Q. Ma,R. L. Zhang,B. C. Zhao,Z. G. Sheng,G. H. Zheng,J. M. Dai,Y. P. Sun###
(893323, 893323)
 Moreover, the variation of the Curie temperatureand the MIT temperature is quite complex and the results are discussed in termsof three factors including the average A-site cation radius <r<missing VAR>A>, the sizemismatch and the Te content.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Insulator-metal transition and the magnetic phase diagram of La1-xTexMnO3|J. Yang,W. H. Song,Y. Q. Ma,R. L. Zhang,B. C. Zhao,Z. G. Sheng,G. H. Zheng,J. M. Dai,Y. P. Sun###
(893328, 893328)
 In addition, there has an evidentmagnetoresistance (MR) at low temperatures for all samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr2RuO4
###Low-Temperature Hall Effect in Substituted Sr2RuO4|N. Kikugawa,A. P. Mackenzie,C. Bergemann,Y. Maeno###
(893382, 893386)
Low-Temperature Hall Effect in Substituted Sr2RuO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 4, 'T', 2],[211.0, 0.01, 'that', 3]

Sr2RuO4
###Low-Temperature Hall Effect in Substituted Sr2RuO4|N. Kikugawa,A. P. Mackenzie,C. Bergemann,Y. Maeno###
(893424, 893428)
 We report the results of a study of the Hall effect and magnetoresistance insingle crystals of Sr2RuO4 in which Sr(2) has been substituted by La(3)(Sr(2-y)La(y)RuO(4)) or Ru(4) by Ti(4) (Sr(2)Ru(1-x)Ti(x)O(4)).
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 4, 'T', 1],[169.0, 0.01, 'that', 2]

La
###Low-Temperature Hall Effect in Substituted Sr2RuO4|N. Kikugawa,A. P. Mackenzie,C. Bergemann,Y. Maeno###
(893460, 893460)
 We report the results of a study of the Hall effect and magnetoresistance insingle crystals of Sr2RuO4 in which Sr(2) has been substituted by La(3)(Sr(2-y)La(y)RuO(4)) or Ru(4) by Ti(4) (Sr(2)Ru(1-x)Ti(x)O(4)).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 4, 'T', 1],[137.0, 0.01, 'that', 2]

Ti
###Low-Temperature Hall Effect in Substituted Sr2RuO4|N. Kikugawa,A. P. Mackenzie,C. Bergemann,Y. Maeno###
(893496, 893496)
 We report the results of a study of the Hall effect and magnetoresistance insingle crystals of Sr2RuO4 in which Sr(2) has been substituted by La(3)(Sr(2-y)La(y)RuO(4)) or Ru(4) by Ti(4) (Sr(2)Ru(1-x)Ti(x)O(4)).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 4, 'T', 1],[101.0, 0.01, 'that', 2]

Sr2RuO4
###Low-Temperature Hall Effect in Substituted Sr2RuO4|N. Kikugawa,A. P. Mackenzie,C. Bergemann,Y. Maeno###
(893512, 893516)
 For undopedSr2RuO4, the purity is so high that the strong-field Hall coefficient can bemeasured for fields above 4 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 4, 'T', 0],[81.0, 0.01, 'that', 1]

Pr0.5Ca0.5MnO3
###Current-induced metallic behavior in Pr$_{0.5}$Ca$_{0.5}$MnO$_3$ thin films: competition between Joule heating and nonlinear conduction mechanism|P. Padhan,W. Prellier,Ch. Simon,R. C. Budhani###
(893665, 893671)
Current-induced metallic behavior in Pr0.5Ca0.5MnO3 thin films competition between Joule heating and nonlinear conduction mechanism.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pr0.5Ca0.5MnO3
###Current-induced metallic behavior in Pr$_{0.5}$Ca$_{0.5}$MnO$_3$ thin films: competition between Joule heating and nonlinear conduction mechanism|P. Padhan,W. Prellier,Ch. Simon,R. C. Budhani###
(893700, 893706)
 Thin films of Pr0.5Ca0.5MnO3 manganites exhibiting charge/orbital-orderedproperties with colossal magnetoresistance have been synthesized by the pulsedlaser deposition technique on both (100)-SrTiO3 and (100)-LaAlO3 substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Current-induced metallic behavior in Pr$_{0.5}$Ca$_{0.5}$MnO$_3$ thin films: competition between Joule heating and nonlinear conduction mechanism|P. Padhan,W. Prellier,Ch. Simon,R. C. Budhani###
(893754, 893757)
 Thin films of Pr0.5Ca0.5MnO3 manganites exhibiting charge/orbital-orderedproperties with colossal magnetoresistance have been synthesized by the pulsedlaser deposition technique on both (100)-SrTiO3 and (100)-LaAlO3 substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaAlO3
###Current-induced metallic behavior in Pr$_{0.5}$Ca$_{0.5}$MnO$_3$ thin films: competition between Joule heating and nonlinear conduction mechanism|P. Padhan,W. Prellier,Ch. Simon,R. C. Budhani###
(893765, 893768)
 Thin films of Pr0.5Ca0.5MnO3 manganites exhibiting charge/orbital-orderedproperties with colossal magnetoresistance have been synthesized by the pulsedlaser deposition technique on both (100)-SrTiO3 and (100)-LaAlO3 substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Current-induced metallic behavior in Pr$_{0.5}$Ca$_{0.5}$MnO$_3$ thin films: competition between Joule heating and nonlinear conduction mechanism|P. Padhan,W. Prellier,Ch. Simon,R. C. Budhani###
(893948, 893948)
 Our results also indicate that a nonlinearconduction, which cannot be explained by homogeneous Joule heating of the film,is observed when the material is less resistive (10-2 W.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Theory of Zero-Bias Anomaly in Magnetic Tunnel Junctions: Inelastic Tunneling via Impurities|L. Sheng,D. Y. Xing,D. N. Sheng###
(894171, 894171)
 As aconsequence, the tunneling conductance G<missing VAR>(V) increases with bias voltage V as G<missing VAR>(V)-G<missing VAR>(0)sim V2g<missing VAR>, exhibiting a discontinuity in slope at V0 forg<missing VAR>le 0.5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(V)
###Theory of Zero-Bias Anomaly in Magnetic Tunnel Junctions: Inelastic Tunneling via Impurities|L. Sheng,D. Y. Xing,D. N. Sheng###
(894186, 894188)
 As aconsequence, the tunneling conductance G<missing VAR>(V) increases with bias voltage V as G<missing VAR>(V)-G<missing VAR>(0)sim V2g<missing VAR>, exhibiting a discontinuity in slope at V0 forg<missing VAR>le 0.5.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Theory of Zero-Bias Anomaly in Magnetic Tunnel Junctions: Inelastic Tunneling via Impurities|L. Sheng,D. Y. Xing,D. N. Sheng###
(894200, 894200)
 As aconsequence, the tunneling conductance G<missing VAR>(V) increases with bias voltage V as G<missing VAR>(V)-G<missing VAR>(0)sim V2g<missing VAR>, exhibiting a discontinuity in slope at V0 forg<missing VAR>le 0.5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(V)
###Theory of Zero-Bias Anomaly in Magnetic Tunnel Junctions: Inelastic Tunneling via Impurities|L. Sheng,D. Y. Xing,D. N. Sheng###
(894205, 894207)
 As aconsequence, the tunneling conductance G<missing VAR>(V) increases with bias voltage V as G<missing VAR>(V)-G<missing VAR>(0)sim V2g<missing VAR>, exhibiting a discontinuity in slope at V0 forg<missing VAR>le 0.5.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V2
###Theory of Zero-Bias Anomaly in Magnetic Tunnel Junctions: Inelastic Tunneling via Impurities|L. Sheng,D. Y. Xing,D. N. Sheng###
(894215, 894216)
 As aconsequence, the tunneling conductance G<missing VAR>(V) increases with bias voltage V as G<missing VAR>(V)-G<missing VAR>(0)sim V2g<missing VAR>, exhibiting a discontinuity in slope at V0 forg<missing VAR>le 0.5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V0
###Theory of Zero-Bias Anomaly in Magnetic Tunnel Junctions: Inelastic Tunneling via Impurities|L. Sheng,D. Y. Xing,D. N. Sheng###
(894232, 894233)
 As aconsequence, the tunneling conductance G<missing VAR>(V) increases with bias voltage V as G<missing VAR>(V)-G<missing VAR>(0)sim V2g<missing VAR>, exhibiting a discontinuity in slope at V0 forg<missing VAR>le 0.5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Transition from a fractional quantum Hall liquid to an electron solid at Landau level filling nu = 1/3 in tilted magnetic fields|W. Pan,G. A. Csathy,D. C. Tsui,L. N. Pfeiffer,K. W. West###
(894379, 894379)
 We have observed in a low density two-dimensional hole system (2D<missing VAR>HS) ofextremely high quality (with hole density p1.6x1010 cm-2 and mobilitymu0.8x<missing VAR>106 cm2/Vs) that, as the 2DHS is continuously tilted with respect tothe direction of the magnetic field, the nu1/3 fractional quantum Hall effect(FQHE) state is weakened and its magnetoresistivity rises from  0.4kohm/square in the normal orientation to  180 kohm/square at tilt angle theta 80 degrees.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 2, 'DHS', 0],[137.0, 180, 'kohm', 0],[150.0, 80, 'degrees', 0],[170.0, 2, 'DHS', 1]

F
###Transition from a fractional quantum Hall liquid to an electron solid at Landau level filling nu = 1/3 in tilted magnetic fields|W. Pan,G. A. Csathy,D. C. Tsui,L. N. Pfeiffer,K. W. West###
(894476, 894476)
 We have observed in a low density two-dimensional hole system (2D<missing VAR>HS) ofextremely high quality (with hole density p1.6x1010 cm-2 and mobilitymu0.8x<missing VAR>106 cm2/Vs) that, as the 2DHS is continuously tilted with respect tothe direction of the magnetic field, the nu1/3 fractional quantum Hall effect(FQHE) state is weakened and its magnetoresistivity rises from  0.4kohm/square in the normal orientation to  180 kohm/square at tilt angle theta 80 degrees.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 2, 'DHS', 0],[40.0, 180, 'kohm', 0],[53.0, 80, 'degrees', 0],[73.0, 2, 'DHS', 1]

F
###Transition from a fractional quantum Hall liquid to an electron solid at Landau level filling nu = 1/3 in tilted magnetic fields|W. Pan,G. A. Csathy,D. C. Tsui,L. N. Pfeiffer,K. W. West###
(894556, 894556)
 We attribute this phenomenon to the transition of the 2DHS fromthe FQHE liquid state to the pinned Wigner solid state, and argue that itsorigin is the strong coupling of subband Landau levels under the tiltedmagnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 2, 'DHS', 1],[40.0, 180, 'kohm', 1],[27.0, 80, 'degrees', 1],[7.0, 2, 'DHS', 0]

S
###Microwave strengths to induce magnetoresistance oscillations in high-mobility 2DES in a photon-assisted impurity scattering model|X. L. Lei###
(894748, 894748)
 Lei and S.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 2, 'DES', 2],[17.0, 91, ',', 5],[167.0, 60, 'nm', 6],[172.0, 2, 'D', 6]

Y
###Microwave strengths to induce magnetoresistance oscillations in high-mobility 2DES in a photon-assisted impurity scattering model|X. L. Lei###
(894750, 894750)
Y.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 2, 'DES', 3],[15.0, 91, ',', 4],[165.0, 60, 'nm', 5],[170.0, 2, 'D', 5]

Sr3Ru2O7
###Investigation into the Itinerant metamagnetism of Sr3Ru2O7 for the Field Parallel to the Ruthenium Oxygen Planes|Robin S. Perry,Takashi Tayama,Kentaro Kitagawa,Toshiro Sakakibara,Kenji Ishida,Yoshiteru Maeno###
(894948, 894953)
Investigation into the Itinerant metamagnetism of Sr3Ru2O7 for the Field Parallel to the Ruthenium Oxygen Planes.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[202.0, 5.8, 'T', 4],[207.0, 6.3, 'T', 4],[291.0, 5.1, 'T', 6]

Sr3Ru2O7
###Investigation into the Itinerant metamagnetism of Sr3Ru2O7 for the Field Parallel to the Ruthenium Oxygen Planes|Robin S. Perry,Takashi Tayama,Kentaro Kitagawa,Toshiro Sakakibara,Kenji Ishida,Yoshiteru Maeno###
(894992, 894997)
 We report a detailed investigation into the metamagnetism of Sr3Ru2O7 at lowtemperatures for the magnetic field parallel to the ruthenium oxygen planes.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 5.8, 'T', 3],[163.0, 6.3, 'T', 3],[247.0, 5.1, 'T', 5]

K
###Investigation into the Itinerant metamagnetism of Sr3Ru2O7 for the Field Parallel to the Ruthenium Oxygen Planes|Robin S. Perry,Takashi Tayama,Kentaro Kitagawa,Toshiro Sakakibara,Kenji Ishida,Yoshiteru Maeno###
(895124, 895124)
 From hysteretic behaviour in the magnetisation, we confirm earlier workand observe a finite temperature critical point at (5 T<missing VAR>, >0.25 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 5.8, 'T', 1],[36.0, 6.3, 'T', 1],[120.0, 5.1, 'T', 3]

In
###Investigation into the Itinerant metamagnetism of Sr3Ru2O7 for the Field Parallel to the Ruthenium Oxygen Planes|Robin S. Perry,Takashi Tayama,Kentaro Kitagawa,Toshiro Sakakibara,Kenji Ishida,Yoshiteru Maeno###
(895128, 895128)
 In ourhighest quality samples two-step metamagnetic transitions are additionallyobserved at 5.8 T and at 6.3 T, which coincide with a range of broad maximum inthe magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 5.8, 'T', 0],[32.0, 6.3, 'T', 0],[116.0, 5.1, 'T', 2]

At
###Investigation into the Itinerant metamagnetism of Sr3Ru2O7 for the Field Parallel to the Ruthenium Oxygen Planes|Robin S. Perry,Takashi Tayama,Kentaro Kitagawa,Toshiro Sakakibara,Kenji Ishida,Yoshiteru Maeno###
(895187, 895187)
 At low temperatures, these two metamagnetic featureseach further split in two.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 5.8, 'T', 1],[27.0, 6.3, 'T', 1],[57.0, 5.1, 'T', 1]

P
###How to map a pseudogap?|V. N. Zavaritsky###
(895272, 895272)
 A pseudogap (PG) is believed to be responsible for the non Fermi-liquidnormal state of cuprate superconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 6089, ';', 6],[235.0, 86, ',', 13]

In
###How to map a pseudogap?|V. N. Zavaritsky###
(895308, 895308)
 In particular, field induced PG<missing VAR>collapse causes negative longitudinal magnetoresistance (MR), for details, seeV.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 6089, ';', 5],[199.0, 86, ',', 12]

P
###How to map a pseudogap?|V. N. Zavaritsky###
(895317, 895317)
 In particular, field induced PG<missing VAR>collapse causes negative longitudinal magnetoresistance (MR), for details, seeV.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 6089, ';', 5],[190.0, 86, ',', 12]

V
###How to map a pseudogap?|V. N. Zavaritsky###
(895345, 895345)
 In particular, field induced PG<missing VAR>collapse causes negative longitudinal magnetoresistance (MR), for details, seeV.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 6089, ';', 5],[162.0, 86, ',', 12]

N
###How to map a pseudogap?|V. N. Zavaritsky###
(895347, 895347)
N.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 6089, ';', 4],[160.0, 86, ',', 11]

S
###How to map a pseudogap?|V. N. Zavaritsky###
(895361, 895361)
S.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 6089, ';', 1],[146.0, 86, ',', 8]

P
###How to map a pseudogap?|V. N. Zavaritsky###
(895384, 895384)
 The PG<missing VAR> collapses because of spin-splitting of the polaronband while the orbital effects are irrelevant.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 6089, ';', 1],[123.0, 86, ',', 6]

B
###How to map a pseudogap?|V. N. Zavaritsky###
(895440, 895440)
 Recently these conclusions,including the Zeeman relation, kBTgBpg, which couples the PG<missing VAR>temperature, T<missing VAR>, and the PG<missing VAR> closing field, Bpg, were reaffirmed by T<missing VAR>.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 6089, ';', 2],[67.0, 86, ',', 5]

P
###How to map a pseudogap?|V. N. Zavaritsky###
(895450, 895450)
 Recently these conclusions,including the Zeeman relation, kBTgBpg, which couples the PG<missing VAR>temperature, T<missing VAR>, and the PG<missing VAR> closing field, Bpg, were reaffirmed by T<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 6089, ';', 2],[57.0, 86, ',', 5]

P
###How to map a pseudogap?|V. N. Zavaritsky###
(895464, 895464)
 Recently these conclusions,including the Zeeman relation, kBTgBpg, which couples the PG<missing VAR>temperature, T<missing VAR>, and the PG<missing VAR> closing field, Bpg, were reaffirmed by T<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 6089, ';', 2],[43.0, 86, ',', 5]

B
###How to map a pseudogap?|V. N. Zavaritsky###
(895472, 895472)
 Recently these conclusions,including the Zeeman relation, kBTgBpg, which couples the PG<missing VAR>temperature, T<missing VAR>, and the PG<missing VAR> closing field, Bpg, were reaffirmed by T<missing VAR>.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 6089, ';', 2],[35.0, 86, ',', 5]

Gd
###Magnetic properties of pure and Gd doped EuO probed by NMR|Arnaud Comment,Jean-Philippe Ansermet,Charles P. Slichter,Heesuk Rho,Clark S. Snow,S. Lance Cooper###
(895956, 895956)
Magnetic properties of pure and Gd doped EuO probed by NMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[170.0, 0.6, '%', 4]

EuO
###Magnetic properties of pure and Gd doped EuO probed by NMR|Arnaud Comment,Jean-Philippe Ansermet,Charles P. Slichter,Heesuk Rho,Clark S. Snow,S. Lance Cooper###
(895960, 895961)
Magnetic properties of pure and Gd doped EuO probed by NMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 0.6, '%', 4]

N
###Magnetic properties of pure and Gd doped EuO probed by NMR|Arnaud Comment,Jean-Philippe Ansermet,Charles P. Slichter,Heesuk Rho,Clark S. Snow,S. Lance Cooper###
(895967, 895967)
Magnetic properties of pure and Gd doped EuO probed by NMR.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[159.0, 0.6, '%', 4]

Eu
###Magnetic properties of pure and Gd doped EuO probed by NMR|Arnaud Comment,Jean-Philippe Ansermet,Charles P. Slichter,Heesuk Rho,Clark S. Snow,S. Lance Cooper###
(895974, 895974)
 An Eu NMR study in the ferromagnetic phase of pure and Gd doped EuO wasperformed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 0.6, '%', 3]

N
###Magnetic properties of pure and Gd doped EuO probed by NMR|Arnaud Comment,Jean-Philippe Ansermet,Charles P. Slichter,Heesuk Rho,Clark S. Snow,S. Lance Cooper###
(895976, 895976)
 An Eu NMR study in the ferromagnetic phase of pure and Gd doped EuO wasperformed.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 0.6, '%', 3]

Gd
###Magnetic properties of pure and Gd doped EuO probed by NMR|Arnaud Comment,Jean-Philippe Ansermet,Charles P. Slichter,Heesuk Rho,Clark S. Snow,S. Lance Cooper###
(895996, 895996)
 An Eu NMR study in the ferromagnetic phase of pure and Gd doped EuO wasperformed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 0.6, '%', 3]

EuO
###Magnetic properties of pure and Gd doped EuO probed by NMR|Arnaud Comment,Jean-Philippe Ansermet,Charles P. Slichter,Heesuk Rho,Clark S. Snow,S. Lance Cooper###
(896000, 896001)
 An Eu NMR study in the ferromagnetic phase of pure and Gd doped EuO wasperformed.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 0.6, '%', 3]

N
###Magnetic properties of pure and Gd doped EuO probed by NMR|Arnaud Comment,Jean-Philippe Ansermet,Charles P. Slichter,Heesuk Rho,Clark S. Snow,S. Lance Cooper###
(896019, 896019)
 A complete description of the NMR lineshape of pure EuO allowed forthe influence of doping EuO with Gd impurities to be highlighted.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 0.6, '%', 2]

EuO
###Magnetic properties of pure and Gd doped EuO probed by NMR|Arnaud Comment,Jean-Philippe Ansermet,Charles P. Slichter,Heesuk Rho,Clark S. Snow,S. Lance Cooper###
(896029, 896030)
 A complete description of the NMR lineshape of pure EuO allowed forthe influence of doping EuO with Gd impurities to be highlighted.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 0.6, '%', 2]

EuO
###Magnetic properties of pure and Gd doped EuO probed by NMR|Arnaud Comment,Jean-Philippe Ansermet,Charles P. Slichter,Heesuk Rho,Clark S. Snow,S. Lance Cooper###
(896045, 896046)
 A complete description of the NMR lineshape of pure EuO allowed forthe influence of doping EuO with Gd impurities to be highlighted.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 0.6, '%', 2]

Gd
###Magnetic properties of pure and Gd doped EuO probed by NMR|Arnaud Comment,Jean-Philippe Ansermet,Charles P. Slichter,Heesuk Rho,Clark S. Snow,S. Lance Cooper###
(896050, 896050)
 A complete description of the NMR lineshape of pure EuO allowed forthe influence of doping EuO with Gd impurities to be highlighted.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 0.6, '%', 2]

Gd
###Magnetic properties of pure and Gd doped EuO probed by NMR|Arnaud Comment,Jean-Philippe Ansermet,Charles P. Slichter,Heesuk Rho,Clark S. Snow,S. Lance Cooper###
(896082, 896082)
 The presenceof a temperature dependent static magnetic inhomogeneity in Gd doped EuO wasdemonstrated by studying the temperature dependence of the lineshapes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 0.6, '%', 1]

EuO
###Magnetic properties of pure and Gd doped EuO probed by NMR|Arnaud Comment,Jean-Philippe Ansermet,Charles P. Slichter,Heesuk Rho,Clark S. Snow,S. Lance Cooper###
(896086, 896087)
 The presenceof a temperature dependent static magnetic inhomogeneity in Gd doped EuO wasdemonstrated by studying the temperature dependence of the lineshapes.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 0.6, '%', 1]

Gd
###Magnetic properties of pure and Gd doped EuO probed by NMR|Arnaud Comment,Jean-Philippe Ansermet,Charles P. Slichter,Heesuk Rho,Clark S. Snow,S. Lance Cooper###
(896129, 896129)
 Theresults suggest that the inhomogeneity in 0.6% Gd doped EuO is linked tocolossal magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 0.6, '%', 0]

EuO
###Magnetic properties of pure and Gd doped EuO probed by NMR|Arnaud Comment,Jean-Philippe Ansermet,Charles P. Slichter,Heesuk Rho,Clark S. Snow,S. Lance Cooper###
(896133, 896134)
 Theresults suggest that the inhomogeneity in 0.6% Gd doped EuO is linked tocolossal magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 0.6, '%', 0]

Gd
###Magnetic properties of pure and Gd doped EuO probed by NMR|Arnaud Comment,Jean-Philippe Ansermet,Charles P. Slichter,Heesuk Rho,Clark S. Snow,S. Lance Cooper###
(896208, 896208)
 The measurement of the spin-lattice relaxationtimes as a function of temperature led to the determination of the value of theexchange integral J<missing VAR> as a function of Gd doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 0.6, '%', 1]

Gd
###Magnetic properties of pure and Gd doped EuO probed by NMR|Arnaud Comment,Jean-Philippe Ansermet,Charles P. Slichter,Heesuk Rho,Clark S. Snow,S. Lance Cooper###
(896261, 896261)
 It was found that J<missing VAR> istemperature independent and spatially homogeneous for all the samples and thatits value increases abruptly with increasing Gd doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 0.6, '%', 2]

AuPd
###Time-dependent universal conductance fluctuations and coherence in AuPd and Ag|A. Trionfi,S. Lee,D. Natelson###
(896290, 896291)
Time-dependent universal conductance fluctuations and coherence in AuPd and Ag.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 10, 'K', 5]

Ag
###Time-dependent universal conductance fluctuations and coherence in AuPd and Ag|A. Trionfi,S. Lee,D. Natelson###
(896295, 896295)
Time-dependent universal conductance fluctuations and coherence in AuPd and Ag.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 10, 'K', 5]

AuPd
###Time-dependent universal conductance fluctuations and coherence in AuPd and Ag|A. Trionfi,S. Lee,D. Natelson###
(896412, 896413)
 Strong agreement isobserved in both quasi-2D<missing VAR> and quasi-1D<missing VAR> AuPd samples, a metal known to have highspin-orbit scattering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 10, 'K', 1]

Ag
###Time-dependent universal conductance fluctuations and coherence in AuPd and Ag|A. Trionfi,S. Lee,D. Natelson###
(896459, 896459)
 However, quantitative it disagreement is seen inquasi-1D<missing VAR> Ag wires below 10 K, a material with intermediate spin-orbitscattering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 10, 'K', 0]

Na0.5CoO2
###Magnetic-field-induced Fermi surface reconstruction in Na$_{0.5}$CoO$_2$|L. Balicas,M. Abdel-Jawad,N. E. Hussey,F. C. Chou,P. A. Lee###
(896605, 896609)
Magnetic-field-induced Fermi surface reconstruction in Na0.5CoO2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 150, 'and', 2],[68.0, 40, 'T', 2],[76.0, 1, 'and', 2],[79.0, 25, '%', 3],[256.0, 40, 'T', 6]

Na0.5CoO2
###Magnetic-field-induced Fermi surface reconstruction in Na$_{0.5}$CoO$_2$|L. Balicas,M. Abdel-Jawad,N. E. Hussey,F. C. Chou,P. A. Lee###
(896641, 896645)
 We have performed electrical transport measurements at low temperatures andhigh magnetic fields in Na0.5CoO2 single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 150, 'and', 1],[32.0, 40, 'T', 1],[40.0, 1, 'and', 1],[43.0, 25, '%', 2],[220.0, 40, 'T', 5]

F1
###Magnetic-field-induced Fermi surface reconstruction in Na$_{0.5}$CoO$_2$|L. Balicas,M. Abdel-Jawad,N. E. Hussey,F. C. Chou,P. A. Lee###
(896671, 896672)
 Shubnikov de Haasoscillations were observed for two frequencies F1 150 and F2 40 Tcorresponding respectively to 1 and .
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[1.0, 150, 'and', 0],[5.0, 40, 'T', 0],[13.0, 1, 'and', 0],[16.0, 25, '%', 1],[193.0, 40, 'T', 4]

F2
###Magnetic-field-induced Fermi surface reconstruction in Na$_{0.5}$CoO$_2$|L. Balicas,M. Abdel-Jawad,N. E. Hussey,F. C. Chou,P. A. Lee###
(896675, 896676)
 Shubnikov de Haasoscillations were observed for two frequencies F1 150 and F2 40 Tcorresponding respectively to 1 and .
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 150, 'and', 0],[1.0, 40, 'T', 0],[9.0, 1, 'and', 0],[12.0, 25, '%', 1],[189.0, 40, 'T', 4]

(FS)
###Magnetic-field-induced Fermi surface reconstruction in Na$_{0.5}$CoO$_2$|L. Balicas,M. Abdel-Jawad,N. E. Hussey,F. C. Chou,P. A. Lee###
(896717, 896720)
 These small Fermi surface (FS) pockets indicate that most ofthe original FS vanishes at the charge ordering (CO) transition.
Featurization successful!
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 150, 'and', 2],[40.0, 40, 'T', 2],[32.0, 1, 'and', 2],[29.0, 25, '%', 1],[145.0, 40, 'T', 2]

FS
###Magnetic-field-induced Fermi surface reconstruction in Na$_{0.5}$CoO$_2$|L. Balicas,M. Abdel-Jawad,N. E. Hussey,F. C. Chou,P. A. Lee###
(896737, 896738)
 These small Fermi surface (FS) pockets indicate that most ofthe original FS vanishes at the charge ordering (CO) transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 150, 'and', 2],[60.0, 40, 'T', 2],[52.0, 1, 'and', 2],[49.0, 25, '%', 1],[127.0, 40, 'T', 2]

(CO)
###Magnetic-field-induced Fermi surface reconstruction in Na$_{0.5}$CoO$_2$|L. Balicas,M. Abdel-Jawad,N. E. Hussey,F. C. Chou,P. A. Lee###
(896750, 896753)
 These small Fermi surface (FS) pockets indicate that most ofthe original FS vanishes at the charge ordering (CO) transition.
Featurization successful!
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 150, 'and', 2],[73.0, 40, 'T', 2],[65.0, 1, 'and', 2],[62.0, 25, '%', 1],[112.0, 40, 'T', 2]

CO
###Magnetic-field-induced Fermi surface reconstruction in Na$_{0.5}$CoO$_2$|L. Balicas,M. Abdel-Jawad,N. E. Hussey,F. C. Chou,P. A. Lee###
(896776, 896777)
 Furthermore,in-plane magnetic fields strongly suppress the CO state.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 150, 'and', 3],[99.0, 40, 'T', 3],[91.0, 1, 'and', 3],[88.0, 25, '%', 2],[88.0, 40, 'T', 1]

O
###Magnetic-field-induced Fermi surface reconstruction in Na$_{0.5}$CoO$_2$|L. Balicas,M. Abdel-Jawad,N. E. Hussey,F. C. Chou,P. A. Lee###
(896812, 896812)
 For fields rotatingwithin the conducting planes we observe angular magnetoresistance oscillations(AMRO), whose periodicity changes from two- to six-fold at the transition,suggesting that a reconstructed hexagonal FS emerges at a field of about 40 T.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 150, 'and', 4],[135.0, 40, 'T', 4],[127.0, 1, 'and', 4],[124.0, 25, '%', 3],[53.0, 40, 'T', 0]

FS
###Magnetic-field-induced Fermi surface reconstruction in Na$_{0.5}$CoO$_2$|L. Balicas,M. Abdel-Jawad,N. E. Hussey,F. C. Chou,P. A. Lee###
(896851, 896852)
 For fields rotatingwithin the conducting planes we observe angular magnetoresistance oscillations(AMRO), whose periodicity changes from two- to six-fold at the transition,suggesting that a reconstructed hexagonal FS emerges at a field of about 40 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 150, 'and', 4],[174.0, 40, 'T', 4],[166.0, 1, 'and', 4],[163.0, 25, '%', 3],[13.0, 40, 'T', 0]

GaAs/AlGaAs
###Magnetoresistance of p-GaAs/AlGaAs structures in the vicinity of metal-insulator transition: Effect of superconducting leads|N. V. Agrinskaya,V. I. Kozub,A. V. Chernyaev,D. V. Shamshur,A. A. Zuzin###
(896882, 896887)
Magnetoresistance of p<missing VAR>-GaAs/AlGaAs structures in the vicinity of metal-insulator transition Effect of superconducting leads.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

In
###Magnetoresistance of p-GaAs/AlGaAs structures in the vicinity of metal-insulator transition: Effect of superconducting leads|N. V. Agrinskaya,V. I. Kozub,A. V. Chernyaev,D. V. Shamshur,A. A. Zuzin###
(896966, 896966)
 In metallic samples, a peak of negativemagnetoresistance at fields lower than critical magnetic field of the leads wasobserved.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magnetoresistance of p-GaAs/AlGaAs structures in the vicinity of metal-insulator transition: Effect of superconducting leads|N. V. Agrinskaya,V. I. Kozub,A. V. Chernyaev,D. V. Shamshur,A. A. Zuzin###
(897079, 897079)
 In contrast, for the insulating samples no such a peak was observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Spin-dependent resonant tunneling through quantum-well states in magnetic metallic thin films|Zhong-Yi Lu,X. -G. Zhang,Sokrates T. Pantelides###
(897215, 897215)
 Quantum-well (Q<missing VAR>W) states in it nonmagnetic metal layers contained inmagnetic multilayers are known to be important in spin-dependent transport, butthe role of Q<missing VAR>W states in it magnetic layers remains elusive.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Spin-dependent resonant tunneling through quantum-well states in magnetic metallic thin films|Zhong-Yi Lu,X. -G. Zhang,Sokrates T. Pantelides###
(897268, 897268)
 Quantum-well (Q<missing VAR>W) states in it nonmagnetic metal layers contained inmagnetic multilayers are known to be important in spin-dependent transport, butthe role of Q<missing VAR>W states in it magnetic layers remains elusive.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Spin-dependent resonant tunneling through quantum-well states in magnetic metallic thin films|Zhong-Yi Lu,X. -G. Zhang,Sokrates T. Pantelides###
(897309, 897309)
 Here weidentify the conditions and mechanisms for resonant tunneling through Q<missing VAR>W statesin magnetic layers and determine candidate structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/MgO/FeO/Fe/Cr
###Spin-dependent resonant tunneling through quantum-well states in magnetic metallic thin films|Zhong-Yi Lu,X. -G. Zhang,Sokrates T. Pantelides###
(897353, 897363)
 We reportfirst-principles calculations of spin-dependent transport in epitaxialFe/MgO/FeO/Fe/Cr and Co/MgO/Fe/Cr tunnel junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Co/MgO/Fe/Cr
###Spin-dependent resonant tunneling through quantum-well states in magnetic metallic thin films|Zhong-Yi Lu,X. -G. Zhang,Sokrates T. Pantelides###
(897367, 897374)
 We reportfirst-principles calculations of spin-dependent transport in epitaxialFe/MgO/FeO/Fe/Cr and Co/MgO/Fe/Cr tunnel junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

W
###Spin-dependent resonant tunneling through quantum-well states in magnetic metallic thin films|Zhong-Yi Lu,X. -G. Zhang,Sokrates T. Pantelides###
(897395, 897395)
 We demonstrate theformation of sharp Q<missing VAR>W states in the Fe layer and show discrete conductancejumps as the Q<missing VAR>W states enter the transport window with increasing bias.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Spin-dependent resonant tunneling through quantum-well states in magnetic metallic thin films|Zhong-Yi Lu,X. -G. Zhang,Sokrates T. Pantelides###
(897403, 897403)
 We demonstrate theformation of sharp Q<missing VAR>W states in the Fe layer and show discrete conductancejumps as the Q<missing VAR>W states enter the transport window with increasing bias.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Spin-dependent resonant tunneling through quantum-well states in magnetic metallic thin films|Zhong-Yi Lu,X. -G. Zhang,Sokrates T. Pantelides###
(897423, 897423)
 We demonstrate theformation of sharp Q<missing VAR>W states in the Fe layer and show discrete conductancejumps as the Q<missing VAR>W states enter the transport window with increasing bias.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Spin-dependent resonant tunneling through quantum-well states in magnetic metallic thin films|Zhong-Yi Lu,X. -G. Zhang,Sokrates T. Pantelides###
(897442, 897442)
 Atresonance, the current increases by one to two orders of magnitude.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Nonlinear transport through a finite Hubbard chain connected to the electrodes|Kamil Walczak###
(897630, 897630)
 Coherent electronic transport through a molecular device is studied usingnon-equilibrium Greens<missing VAR> function (NEGF) formalism.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Nonlinear transport through a finite Hubbard chain connected to the electrodes|Kamil Walczak###
(897633, 897633)
 Coherent electronic transport through a molecular device is studied usingnon-equilibrium Greens<missing VAR> function (NEGF) formalism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(HF)
###Nonlinear transport through a finite Hubbard chain connected to the electrodes|Kamil Walczak###
(897783, 897786)
 Coulombinteractions within molecular wire are treated by means of the Hartree-Fock(HF) approximation.
Featurization successful!
0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si/Si0.87Ge0.13
###High-frequency transport in $p$-type Si/Si$_{0.87}$Ge$_{0.13}$ heterostructures studied with surface acoustic waves in the quantum Hall regime|I. L. Drichko,A. M. Diakonov,I. Yu. Smirnov,G. O. Andrianov,O. A. Mironov,M. Myronov,D. R. Leadley,T. E. Whall###
(897914, 897919)
High-frequency transport in p<missing VAR>-type Si/Si0.87Ge0.13 heterostructures studied with surface acoustic waves in the quantum Hall regime.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[94.0, 0.7, '<', 2],[112.0, 7, 'T', 2],[214.0, 33, 'mK', 3],[233.0, 2, ',', 4]

S
###High-frequency transport in $p$-type Si/Si$_{0.87}$Ge$_{0.13}$ heterostructures studied with surface acoustic waves in the quantum Hall regime|I. L. Drichko,A. M. Diakonov,I. Yu. Smirnov,G. O. Andrianov,O. A. Mironov,M. Myronov,D. R. Leadley,T. E. Whall###
(897957, 897957)
 The interaction of surface acoustic waves (SAW) with p<missing VAR>-typeSi/Si0.87Ge0.13 heterostructures has been studied for SAW frequenciesof 30-300 M<missing VAR>Hz.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 0.7, '<', 1],[74.0, 7, 'T', 1],[176.0, 33, 'mK', 2],[195.0, 2, ',', 3]

W
###High-frequency transport in $p$-type Si/Si$_{0.87}$Ge$_{0.13}$ heterostructures studied with surface acoustic waves in the quantum Hall regime|I. L. Drichko,A. M. Diakonov,I. Yu. Smirnov,G. O. Andrianov,O. A. Mironov,M. Myronov,D. R. Leadley,T. E. Whall###
(897959, 897959)
 The interaction of surface acoustic waves (SAW) with p<missing VAR>-typeSi/Si0.87Ge0.13 heterostructures has been studied for SAW frequenciesof 30-300 M<missing VAR>Hz.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 0.7, '<', 1],[72.0, 7, 'T', 1],[174.0, 33, 'mK', 2],[193.0, 2, ',', 3]

Si/Si0.87Ge0.13
###High-frequency transport in $p$-type Si/Si$_{0.87}$Ge$_{0.13}$ heterostructures studied with surface acoustic waves in the quantum Hall regime|I. L. Drichko,A. M. Diakonov,I. Yu. Smirnov,G. O. Andrianov,O. A. Mironov,M. Myronov,D. R. Leadley,T. E. Whall###
(897969, 897974)
 The interaction of surface acoustic waves (SAW) with p<missing VAR>-typeSi/Si0.87Ge0.13 heterostructures has been studied for SAW frequenciesof 30-300 M<missing VAR>Hz.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[39.0, 0.7, '<', 1],[57.0, 7, 'T', 1],[159.0, 33, 'mK', 2],[178.0, 2, ',', 3]

S
###High-frequency transport in $p$-type Si/Si$_{0.87}$Ge$_{0.13}$ heterostructures studied with surface acoustic waves in the quantum Hall regime|I. L. Drichko,A. M. Diakonov,I. Yu. Smirnov,G. O. Andrianov,O. A. Mironov,M. Myronov,D. R. Leadley,T. E. Whall###
(897986, 897986)
 The interaction of surface acoustic waves (SAW) with p<missing VAR>-typeSi/Si0.87Ge0.13 heterostructures has been studied for SAW frequenciesof 30-300 M<missing VAR>Hz.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 0.7, '<', 1],[45.0, 7, 'T', 1],[147.0, 33, 'mK', 2],[166.0, 2, ',', 3]

W
###High-frequency transport in $p$-type Si/Si$_{0.87}$Ge$_{0.13}$ heterostructures studied with surface acoustic waves in the quantum Hall regime|I. L. Drichko,A. M. Diakonov,I. Yu. Smirnov,G. O. Andrianov,O. A. Mironov,M. Myronov,D. R. Leadley,T. E. Whall###
(897988, 897988)
 The interaction of surface acoustic waves (SAW) with p<missing VAR>-typeSi/Si0.87Ge0.13 heterostructures has been studied for SAW frequenciesof 30-300 M<missing VAR>Hz.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 0.7, '<', 1],[43.0, 7, 'T', 1],[145.0, 33, 'mK', 2],[164.0, 2, ',', 3]

K
###High-frequency transport in $p$-type Si/Si$_{0.87}$Ge$_{0.13}$ heterostructures studied with surface acoustic waves in the quantum Hall regime|I. L. Drichko,A. M. Diakonov,I. Yu. Smirnov,G. O. Andrianov,O. A. Mironov,M. Myronov,D. R. Leadley,T. E. Whall###
(898019, 898019)
 For temperatures in the range 0.7<T<missing VAR><1.6 K and magnetic fieldsup to 7 T, the SAW attenuation coefficient Gamma and velocity change DeltaV /V were found to oscillate with filling factor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 0.7, '<', 0],[12.0, 7, 'T', 0],[114.0, 33, 'mK', 1],[133.0, 2, ',', 2]

S
###High-frequency transport in $p$-type Si/Si$_{0.87}$Ge$_{0.13}$ heterostructures studied with surface acoustic waves in the quantum Hall regime|I. L. Drichko,A. M. Diakonov,I. Yu. Smirnov,G. O. Andrianov,O. A. Mironov,M. Myronov,D. R. Leadley,T. E. Whall###
(898036, 898036)
 For temperatures in the range 0.7<T<missing VAR><1.6 K and magnetic fieldsup to 7 T, the SAW attenuation coefficient Gamma and velocity change DeltaV /V were found to oscillate with filling factor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 0.7, '<', 0],[5.0, 7, 'T', 0],[97.0, 33, 'mK', 1],[116.0, 2, ',', 2]

W
###High-frequency transport in $p$-type Si/Si$_{0.87}$Ge$_{0.13}$ heterostructures studied with surface acoustic waves in the quantum Hall regime|I. L. Drichko,A. M. Diakonov,I. Yu. Smirnov,G. O. Andrianov,O. A. Mironov,M. Myronov,D. R. Leadley,T. E. Whall###
(898038, 898038)
 For temperatures in the range 0.7<T<missing VAR><1.6 K and magnetic fieldsup to 7 T, the SAW attenuation coefficient Gamma and velocity change DeltaV /V were found to oscillate with filling factor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 0.7, '<', 0],[7.0, 7, 'T', 0],[95.0, 33, 'mK', 1],[114.0, 2, ',', 2]

V
###High-frequency transport in $p$-type Si/Si$_{0.87}$Ge$_{0.13}$ heterostructures studied with surface acoustic waves in the quantum Hall regime|I. L. Drichko,A. M. Diakonov,I. Yu. Smirnov,G. O. Andrianov,O. A. Mironov,M. Myronov,D. R. Leadley,T. E. Whall###
(898055, 898055)
 For temperatures in the range 0.7<T<missing VAR><1.6 K and magnetic fieldsup to 7 T, the SAW attenuation coefficient Gamma and velocity change DeltaV /V were found to oscillate with filling factor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 0.7, '<', 0],[24.0, 7, 'T', 0],[78.0, 33, 'mK', 1],[97.0, 2, ',', 2]

V
###High-frequency transport in $p$-type Si/Si$_{0.87}$Ge$_{0.13}$ heterostructures studied with surface acoustic waves in the quantum Hall regime|I. L. Drichko,A. M. Diakonov,I. Yu. Smirnov,G. O. Andrianov,O. A. Mironov,M. Myronov,D. R. Leadley,T. E. Whall###
(898058, 898058)
 For temperatures in the range 0.7<T<missing VAR><1.6 K and magnetic fieldsup to 7 T, the SAW attenuation coefficient Gamma and velocity change DeltaV /V were found to oscillate with filling factor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 0.7, '<', 0],[27.0, 7, 'T', 0],[75.0, 33, 'mK', 1],[94.0, 2, ',', 2]

At
###High-frequency transport in $p$-type Si/Si$_{0.87}$Ge$_{0.13}$ heterostructures studied with surface acoustic waves in the quantum Hall regime|I. L. Drichko,A. M. Diakonov,I. Yu. Smirnov,G. O. Andrianov,O. A. Mironov,M. Myronov,D. R. Leadley,T. E. Whall###
(898184, 898184)
 At T<missing VAR>0.7 K, the variations of Gamma, Delta V /V and sigma1with SAW intensity have been studied and can be explained by heating of the twodimensional hole gas by the SAW electric field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[171.0, 0.7, '<', 3],[153.0, 7, 'T', 3],[51.0, 33, 'mK', 2],[32.0, 2, ',', 1]

K
###High-frequency transport in $p$-type Si/Si$_{0.87}$Ge$_{0.13}$ heterostructures studied with surface acoustic waves in the quantum Hall regime|I. L. Drichko,A. M. Diakonov,I. Yu. Smirnov,G. O. Andrianov,O. A. Mironov,M. Myronov,D. R. Leadley,T. E. Whall###
(898189, 898189)
 At T<missing VAR>0.7 K, the variations of Gamma, Delta V /V and sigma1with SAW intensity have been studied and can be explained by heating of the twodimensional hole gas by the SAW electric field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[176.0, 0.7, '<', 3],[158.0, 7, 'T', 3],[56.0, 33, 'mK', 2],[37.0, 2, ',', 1]

V
###High-frequency transport in $p$-type Si/Si$_{0.87}$Ge$_{0.13}$ heterostructures studied with surface acoustic waves in the quantum Hall regime|I. L. Drichko,A. M. Diakonov,I. Yu. Smirnov,G. O. Andrianov,O. A. Mironov,M. Myronov,D. R. Leadley,T. E. Whall###
(898203, 898203)
 At T<missing VAR>0.7 K, the variations of Gamma, Delta V /V and sigma1with SAW intensity have been studied and can be explained by heating of the twodimensional hole gas by the SAW electric field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[190.0, 0.7, '<', 3],[172.0, 7, 'T', 3],[70.0, 33, 'mK', 2],[51.0, 2, ',', 1]

V
###High-frequency transport in $p$-type Si/Si$_{0.87}$Ge$_{0.13}$ heterostructures studied with surface acoustic waves in the quantum Hall regime|I. L. Drichko,A. M. Diakonov,I. Yu. Smirnov,G. O. Andrianov,O. A. Mironov,M. Myronov,D. R. Leadley,T. E. Whall###
(898206, 898206)
 At T<missing VAR>0.7 K, the variations of Gamma, Delta V /V and sigma1with SAW intensity have been studied and can be explained by heating of the twodimensional hole gas by the SAW electric field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[193.0, 0.7, '<', 3],[175.0, 7, 'T', 3],[73.0, 33, 'mK', 2],[54.0, 2, ',', 1]

S
###High-frequency transport in $p$-type Si/Si$_{0.87}$Ge$_{0.13}$ heterostructures studied with surface acoustic waves in the quantum Hall regime|I. L. Drichko,A. M. Diakonov,I. Yu. Smirnov,G. O. Andrianov,O. A. Mironov,M. Myronov,D. R. Leadley,T. E. Whall###
(898216, 898216)
 At T<missing VAR>0.7 K, the variations of Gamma, Delta V /V and sigma1with SAW intensity have been studied and can be explained by heating of the twodimensional hole gas by the SAW electric field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[203.0, 0.7, '<', 3],[185.0, 7, 'T', 3],[83.0, 33, 'mK', 2],[64.0, 2, ',', 1]

W
###High-frequency transport in $p$-type Si/Si$_{0.87}$Ge$_{0.13}$ heterostructures studied with surface acoustic waves in the quantum Hall regime|I. L. Drichko,A. M. Diakonov,I. Yu. Smirnov,G. O. Andrianov,O. A. Mironov,M. Myronov,D. R. Leadley,T. E. Whall###
(898218, 898218)
 At T<missing VAR>0.7 K, the variations of Gamma, Delta V /V and sigma1with SAW intensity have been studied and can be explained by heating of the twodimensional hole gas by the SAW electric field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, 0.7, '<', 3],[187.0, 7, 'T', 3],[85.0, 33, 'mK', 2],[66.0, 2, ',', 1]

S
###High-frequency transport in $p$-type Si/Si$_{0.87}$Ge$_{0.13}$ heterostructures studied with surface acoustic waves in the quantum Hall regime|I. L. Drichko,A. M. Diakonov,I. Yu. Smirnov,G. O. Andrianov,O. A. Mironov,M. Myronov,D. R. Leadley,T. E. Whall###
(898257, 898257)
 At T<missing VAR>0.7 K, the variations of Gamma, Delta V /V and sigma1with SAW intensity have been studied and can be explained by heating of the twodimensional hole gas by the SAW electric field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[244.0, 0.7, '<', 3],[226.0, 7, 'T', 3],[124.0, 33, 'mK', 2],[105.0, 2, ',', 1]

W
###High-frequency transport in $p$-type Si/Si$_{0.87}$Ge$_{0.13}$ heterostructures studied with surface acoustic waves in the quantum Hall regime|I. L. Drichko,A. M. Diakonov,I. Yu. Smirnov,G. O. Andrianov,O. A. Mironov,M. Myronov,D. R. Leadley,T. E. Whall###
(898259, 898259)
 At T<missing VAR>0.7 K, the variations of Gamma, Delta V /V and sigma1with SAW intensity have been studied and can be explained by heating of the twodimensional hole gas by the SAW electric field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[246.0, 0.7, '<', 3],[228.0, 7, 'T', 3],[126.0, 33, 'mK', 2],[107.0, 2, ',', 1]

Nb5
###Quantum interference of electrons in Nb_{5-δ}Te_4 single crystals|A. Stolovits,A. Sherman,R. K. Kremer,Hj. Mattausch,H. Okudera,X-M. Ren,A. Simon,J. R. O'Brien###
(898629, 898630)
Quantum interference of electrons in Nb5-Te4 single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 11, 'T', 2],[131.0, 2, '%', 3]

Te4
###Quantum interference of electrons in Nb_{5-δ}Te_4 single crystals|A. Stolovits,A. Sherman,R. K. Kremer,Hj. Mattausch,H. Okudera,X-M. Ren,A. Simon,J. R. O'Brien###
(898632, 898633)
Quantum interference of electrons in Nb5-Te4 single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 11, 'T', 2],[128.0, 2, '%', 3]

Nb5
###Quantum interference of electrons in Nb_{5-δ}Te_4 single crystals|A. Stolovits,A. Sherman,R. K. Kremer,Hj. Mattausch,H. Okudera,X-M. Ren,A. Simon,J. R. O'Brien###
(898644, 898645)
 The compound Nb5-deltaTe4 (delta0.23) with quasi-one-dimensionalcrystal structure undergoes a transition to superconductivity at Tc0.6--0.9K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 11, 'T', 1],[116.0, 2, '%', 2]

Te4
###Quantum interference of electrons in Nb_{5-δ}Te_4 single crystals|A. Stolovits,A. Sherman,R. K. Kremer,Hj. Mattausch,H. Okudera,X-M. Ren,A. Simon,J. R. O'Brien###
(898648, 898649)
 The compound Nb5-deltaTe4 (delta0.23) with quasi-one-dimensionalcrystal structure undergoes a transition to superconductivity at Tc0.6--0.9K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 11, 'T', 1],[112.0, 2, '%', 2]

K
###Quantum interference of electrons in Nb_{5-δ}Te_4 single crystals|A. Stolovits,A. Sherman,R. K. Kremer,Hj. Mattausch,H. Okudera,X-M. Ren,A. Simon,J. R. O'Brien###
(898689, 898689)
 The compound Nb5-deltaTe4 (delta0.23) with quasi-one-dimensionalcrystal structure undergoes a transition to superconductivity at Tc0.6--0.9K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 11, 'T', 1],[72.0, 2, '%', 2]

K
###Quantum interference of electrons in Nb_{5-δ}Te_4 single crystals|A. Stolovits,A. Sherman,R. K. Kremer,Hj. Mattausch,H. Okudera,X-M. Ren,A. Simon,J. R. O'Brien###
(898726, 898726)
 Its electronic transport properties in the normal state are studied in thetemperature range 1.3--270 K and in magnetic fields up to 11 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 11, 'T', 0],[35.0, 2, '%', 1]

K
###Quantum interference of electrons in Nb_{5-δ}Te_4 single crystals|A. Stolovits,A. Sherman,R. K. Kremer,Hj. Mattausch,H. Okudera,X-M. Ren,A. Simon,J. R. O'Brien###
(898812, 898812)
 Nonmonotonic behavior of the resistivity is observed which ischaracterized by two local maxima at T<missing VAR>sim2 K and sim30 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 11, 'T', 2],[51.0, 2, '%', 1]

K
###Quantum interference of electrons in Nb_{5-δ}Te_4 single crystals|A. Stolovits,A. Sherman,R. K. Kremer,Hj. Mattausch,H. Okudera,X-M. Ren,A. Simon,J. R. O'Brien###
(898819, 898819)
 Nonmonotonic behavior of the resistivity is observed which ischaracterized by two local maxima at T<missing VAR>sim2 K and sim30 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 11, 'T', 2],[58.0, 2, '%', 1]

Nd2-xCe
###Hysteresis and Anisotropic Magnetoresistance in Antiferromagnetic $Nd_{2-x}Ce_xCuO_{4}$|X. H. Chen,C. H. Wang,G. Y. Wang,X. G. Luo,J. L. Luo,G. T. Liu,N. L. Wang###
(899003, 899007)
Hysteresis and Anisotropic Magnetoresistance in Antiferromagnetic Nd2-xCex<missing VAR>CuO4.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

CuO4
###Hysteresis and Anisotropic Magnetoresistance in Antiferromagnetic $Nd_{2-x}Ce_xCuO_{4}$|X. H. Chen,C. H. Wang,G. Y. Wang,X. G. Luo,J. L. Luo,G. T. Liu,N. L. Wang###
(899009, 899011)
Hysteresis and Anisotropic Magnetoresistance in Antiferromagnetic Nd2-xCex<missing VAR>CuO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Hysteresis and Anisotropic Magnetoresistance in Antiferromagnetic $Nd_{2-x}Ce_xCuO_{4}$|X. H. Chen,C. H. Wang,G. Y. Wang,X. G. Luo,J. L. Luo,G. T. Liu,N. L. Wang###
(899049, 899049)
 The out-of-plane resistivity (rhoc) and magnetoresistivity (MR) arestudied in antiferromangetic (AF) Nd2-xCex<missing VAR>CuO4 single crystals, whichhave three types of noncollinear antiferromangetic spin structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nd2-xCe
###Hysteresis and Anisotropic Magnetoresistance in Antiferromagnetic $Nd_{2-x}Ce_xCuO_{4}$|X. H. Chen,C. H. Wang,G. Y. Wang,X. G. Luo,J. L. Luo,G. T. Liu,N. L. Wang###
(899052, 899056)
 The out-of-plane resistivity (rhoc) and magnetoresistivity (MR) arestudied in antiferromangetic (AF) Nd2-xCex<missing VAR>CuO4 single crystals, whichhave three types of noncollinear antiferromangetic spin structures.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

CuO4
###Hysteresis and Anisotropic Magnetoresistance in Antiferromagnetic $Nd_{2-x}Ce_xCuO_{4}$|X. H. Chen,C. H. Wang,G. Y. Wang,X. G. Luo,J. L. Luo,G. T. Liu,N. L. Wang###
(899058, 899060)
 The out-of-plane resistivity (rhoc) and magnetoresistivity (MR) arestudied in antiferromangetic (AF) Nd2-xCex<missing VAR>CuO4 single crystals, whichhave three types of noncollinear antiferromangetic spin structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(B)
###Hysteresis and Anisotropic Magnetoresistance in Antiferromagnetic $Nd_{2-x}Ce_xCuO_{4}$|X. H. Chen,C. H. Wang,G. Y. Wang,X. G. Luo,J. L. Luo,G. T. Liu,N. L. Wang###
(899205, 899207)
 One of strikingfeature is an anisotropy of the MR with a fourfold symmetry upon rotating theexternal field (B) within ab plane in the different phases, while twofoldsymmetry at spin reorientation transition temperatures.
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Hysteresis and Anisotropic Magnetoresistance in Antiferromagnetic $Nd_{2-x}Ce_xCuO_{4}$|X. H. Chen,C. H. Wang,G. Y. Wang,X. G. Luo,J. L. Luo,G. T. Liu,N. L. Wang###
(899258, 899258)
 The intriguing thermalhysteresis in rhoc(T,B) and magnetic hysteresis in MR are observed at spinreorientation transition temperatures.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pb
###Anomalous Magnetoresistance in Pb-doped Bi$_2$Sr$_2$Co$_2$O$_y$ Single Crystals|X. G. Luo,X. H. Chen,G. Y. Wang,C. H. Wang,X. Li,W. J. Miao,G. Wu,Y. M. Xiong###
(899302, 899302)
Anomalous Magnetoresistance in Pb-doped Bi2Sr2Co2Oy<missing VAR> Single Crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 0, ',', 1],[47.0, 0.3, ',', 1]

Bi2Sr2Co2O
###Anomalous Magnetoresistance in Pb-doped Bi$_2$Sr$_2$Co$_2$O$_y$ Single Crystals|X. G. Luo,X. H. Chen,G. Y. Wang,C. H. Wang,X. Li,W. J. Miao,G. Wu,Y. M. Xiong###
(899306, 899312)
Anomalous Magnetoresistance in Pb-doped Bi2Sr2Co2Oy<missing VAR> Single Crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 0, ',', 1],[37.0, 0.3, ',', 1]

Bi2-xPb
###Anomalous Magnetoresistance in Pb-doped Bi$_2$Sr$_2$Co$_2$O$_y$ Single Crystals|X. G. Luo,X. H. Chen,G. Y. Wang,C. H. Wang,X. Li,W. J. Miao,G. Wu,Y. M. Xiong###
(899331, 899335)
 Magnetoresistance (MR) of the Bi2-xPbx<missing VAR>Sr2Co2Oy<missing VAR> (x<missing VAR>0, 0.3,0.4) single crystals is investigated systematically.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[11.0, 0, ',', 0],[14.0, 0.3, ',', 0]

Sr2Co2O
###Anomalous Magnetoresistance in Pb-doped Bi$_2$Sr$_2$Co$_2$O$_y$ Single Crystals|X. G. Luo,X. H. Chen,G. Y. Wang,C. H. Wang,X. Li,W. J. Miao,G. Wu,Y. M. Xiong###
(899337, 899341)
 Magnetoresistance (MR) of the Bi2-xPbx<missing VAR>Sr2Co2Oy<missing VAR> (x<missing VAR>0, 0.3,0.4) single crystals is investigated systematically.
Featurization terminated normally.
0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 0, ',', 0],[8.0, 0.3, ',', 0]

H2
###Anomalous Magnetoresistance in Pb-doped Bi$_2$Sr$_2$Co$_2$O$_y$ Single Crystals|X. G. Luo,X. H. Chen,G. Y. Wang,C. H. Wang,X. Li,W. J. Miao,G. Wu,Y. M. Xiong###
(899539, 899540)
 The isothermal MR in high magnetic fields follows aH2 law.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[193.0, 0, ',', 4],[190.0, 0.3, ',', 4]

N
###Temperature and voltage dependence of magnetic barrier junctions with a nonmagnetic spacer|Ali A. Shokri,Alireza Saffarzadeh###
(899693, 899693)
 The temperature and voltage dependence of spin transport is theoreticallyinvestigated in a new type of magnetic tunnel junction, which consists of twoferromagnetic outer electrodes separated by a ferromagnetic barrier and anonmagnetic (NM) metallic spacer.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[207.0, 270, '%', 5],[227.0, 25, '%', 5]

N
###Temperature and voltage dependence of magnetic barrier junctions with a nonmagnetic spacer|Ali A. Shokri,Alireza Saffarzadeh###
(899844, 899844)
 The TMR and spin polarization atdifferent temperatures show an oscillatory behavior as a function of the NM<missing VAR>spacer thickness.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 270, '%', 2],[76.0, 25, '%', 2]

K
###Temperature and voltage dependence of magnetic barrier junctions with a nonmagnetic spacer|Ali A. Shokri,Alireza Saffarzadeh###
(899915, 899915)
 The maximum TMR value, variesapproximately from 270% in reverse bias (at T<missing VAR>0 K) to 25% in forward bias (atT<missing VAR>geq T<missing VAR>C).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 270, '%', 0],[5.0, 25, '%', 0]

C
###Temperature and voltage dependence of magnetic barrier junctions with a nonmagnetic spacer|Ali A. Shokri,Alireza Saffarzadeh###
(899937, 899937)
 The maximum TMR value, variesapproximately from 270% in reverse bias (at T<missing VAR>0 K) to 25% in forward bias (atT<missing VAR>geq T<missing VAR>C).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 270, '%', 0],[17.0, 25, '%', 0]

YbMn2Sb2
###Magnetism and Transport in YbMn2Sb2|R. Nirmala,S. K. Malik,A. V. Morozkin,K. G. Suresh,H. -D. Kim,J. -Y. Kim,B. -G. Park,S. -J. Oh###
(899957, 899961)
Magnetism and Transport in YbMn2Sb2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 2, 'to', 1],[62.0, 300, 'K', 1],[97.0, 1, ',', 2],[200.0, 2.0, 'Electrical', 5],[226.0, 13, 'percent', 5],[233.0, 5, 'K', 5],[244.0, 9, 'T', 5]

YbMn2Sb2
###Magnetism and Transport in YbMn2Sb2|R. Nirmala,S. K. Malik,A. V. Morozkin,K. G. Suresh,H. -D. Kim,J. -Y. Kim,B. -G. Park,S. -J. Oh###
(899978, 899982)
 A new ternary intermetallic compound, namely, YbMn2Sb2, has been synthesizedand its magnetic and electrical transport properties have been studied in thetemperature range of 2 to 300 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 2, 'to', 0],[41.0, 300, 'K', 0],[76.0, 1, ',', 1],[179.0, 2.0, 'Electrical', 4],[205.0, 13, 'percent', 4],[212.0, 5, 'K', 4],[223.0, 9, 'T', 4]

La2O2S
###Magnetism and Transport in YbMn2Sb2|R. Nirmala,S. K. Malik,A. V. Morozkin,K. G. Suresh,H. -D. Kim,J. -Y. Kim,B. -G. Park,S. -J. Oh###
(900040, 900044)
 This compound crystallizes in a trigonal,La2O2S type structure (space group P3bm1, No.
Featurization terminated normally.
0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 2, 'to', 1],[17.0, 300, 'K', 1],[14.0, 1, ',', 0],[117.0, 2.0, 'Electrical', 3],[143.0, 13, 'percent', 3],[150.0, 5, 'K', 3],[161.0, 9, 'T', 3]

P3
###Magnetism and Transport in YbMn2Sb2|R. Nirmala,S. K. Malik,A. V. Morozkin,K. G. Suresh,H. -D. Kim,J. -Y. Kim,B. -G. Park,S. -J. Oh###
(900055, 900056)
 This compound crystallizes in a trigonal,La2O2S type structure (space group P3bm1, No.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 2, 'to', 1],[32.0, 300, 'K', 1],[2.0, 1, ',', 0],[105.0, 2.0, 'Electrical', 3],[131.0, 13, 'percent', 3],[138.0, 5, 'K', 3],[149.0, 9, 'T', 3]

No
###Magnetism and Transport in YbMn2Sb2|R. Nirmala,S. K. Malik,A. V. Morozkin,K. G. Suresh,H. -D. Kim,J. -Y. Kim,B. -G. Park,S. -J. Oh###
(900061, 900061)
 This compound crystallizes in a trigonal,La2O2S type structure (space group P3bm1, No.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0
[39.0, 2, 'to', 1],[38.0, 300, 'K', 1],[3.0, 1, ',', 0],[100.0, 2.0, 'Electrical', 3],[126.0, 13, 'percent', 3],[133.0, 5, 'K', 3],[144.0, 9, 'T', 3]

Mn
###Magnetism and Transport in YbMn2Sb2|R. Nirmala,S. K. Malik,A. V. Morozkin,K. G. Suresh,H. -D. Kim,J. -Y. Kim,B. -G. Park,S. -J. Oh###
(900106, 900106)
 The magnetism is attributed tothe ordering of Mn sublattice.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 2, 'to', 3],[83.0, 300, 'K', 3],[48.0, 1, ',', 2],[55.0, 2.0, 'Electrical', 1],[81.0, 13, 'percent', 1],[88.0, 5, 'K', 1],[99.0, 9, 'T', 1]

YbMn2Sb2
###Magnetism and Transport in YbMn2Sb2|R. Nirmala,S. K. Malik,A. V. Morozkin,K. G. Suresh,H. -D. Kim,J. -Y. Kim,B. -G. Park,S. -J. Oh###
(900122, 900126)
 M<missing VAR>5 xray absorption spectrum of YbMn2Sb2 obtainedat room temperature suggests that the valency of Yb in this compound is closeto 2. Electrical resistivity of this compound is metal like and a positivemagnetoresistance of 13 percent is observed at 5 K in an applied field of 9T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 2, 'to', 4],[99.0, 300, 'K', 4],[64.0, 1, ',', 3],[35.0, 2.0, 'Electrical', 0],[61.0, 13, 'percent', 0],[68.0, 5, 'K', 0],[79.0, 9, 'T', 0]

Yb
###Magnetism and Transport in YbMn2Sb2|R. Nirmala,S. K. Malik,A. V. Morozkin,K. G. Suresh,H. -D. Kim,J. -Y. Kim,B. -G. Park,S. -J. Oh###
(900147, 900147)
 M<missing VAR>5 xray absorption spectrum of YbMn2Sb2 obtainedat room temperature suggests that the valency of Yb in this compound is closeto 2. Electrical resistivity of this compound is metal like and a positivemagnetoresistance of 13 percent is observed at 5 K in an applied field of 9T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 2, 'to', 4],[124.0, 300, 'K', 4],[89.0, 1, ',', 3],[14.0, 2.0, 'Electrical', 0],[40.0, 13, 'percent', 0],[47.0, 5, 'K', 0],[58.0, 9, 'T', 0]

ZrB12
###Specific heat and magnetization of a ZrB12 single crystal: characterization of a type II/1 superconductor|Yuxing Wang,Rolf Lortz,Yuriy Paderno,Vladimir Filippov,Satoko Abe,Ulrich Tutsch,Alain Junod###
(900262, 900264)
Specific heat and magnetization of a ZrB12 single crystal characterization of a type II/1 superconductor.
Featurization terminated normally.
0,0,0,0,0.9230769230769231,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 6, 'K', 1],[223.0, 7, ',', 7],[334.0, 1000, 'G', 9]

II
###Specific heat and magnetization of a ZrB12 single crystal: characterization of a type II/1 superconductor|Yuxing Wang,Rolf Lortz,Yuriy Paderno,Vladimir Filippov,Satoko Abe,Ulrich Tutsch,Alain Junod###
(900278, 900279)
Specific heat and magnetization of a ZrB12 single crystal characterization of a type II/1 superconductor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 6, 'K', 1],[208.0, 7, ',', 7],[319.0, 1000, 'G', 9]

ZrB12
###Specific heat and magnetization of a ZrB12 single crystal: characterization of a type II/1 superconductor|Yuxing Wang,Rolf Lortz,Yuriy Paderno,Vladimir Filippov,Satoko Abe,Ulrich Tutsch,Alain Junod###
(900319, 900321)
 We measured the specific heat, the magnetization, and the magnetoresistanceof a single crystal of ZrB12, which is superconducting below Tc  6 K.
Featurization terminated normally.
0,0,0,0,0.9230769230769231,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 6, 'K', 0],[166.0, 7, ',', 6],[277.0, 1000, 'G', 8]

Tc
###Specific heat and magnetization of a ZrB12 single crystal: characterization of a type II/1 superconductor|Yuxing Wang,Rolf Lortz,Yuriy Paderno,Vladimir Filippov,Satoko Abe,Ulrich Tutsch,Alain Junod###
(900332, 900332)
 We measured the specific heat, the magnetization, and the magnetoresistanceof a single crystal of ZrB12, which is superconducting below Tc  6 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 6, 'K', 0],[155.0, 7, ',', 6],[266.0, 1000, 'G', 8]

BCS
###Specific heat and magnetization of a ZrB12 single crystal: characterization of a type II/1 superconductor|Yuxing Wang,Rolf Lortz,Yuriy Paderno,Vladimir Filippov,Satoko Abe,Ulrich Tutsch,Alain Junod###
(900354, 900356)
 Thespecific heat in zero field shows a BCS-type superconducting transition.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 6, 'K', 1],[131.0, 7, ',', 5],[242.0, 1000, 'G', 7]

II
###Specific heat and magnetization of a ZrB12 single crystal: characterization of a type II/1 superconductor|Yuxing Wang,Rolf Lortz,Yuriy Paderno,Vladimir Filippov,Satoko Abe,Ulrich Tutsch,Alain Junod###
(900443, 900444)
 Thenormal- to superconducting-state transition changes from first order (with alatent heat) to second order (without latent heat) with increasing magneticfield, indicating that the pure compound is a low-kappa, type-II/1superconductor in the classification of Auer and Ullmaier [J<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 6, 'K', 2],[43.0, 7, ',', 4],[154.0, 1000, 'G', 6]

H
###Specific heat and magnetization of a ZrB12 single crystal: characterization of a type II/1 superconductor|Yuxing Wang,Rolf Lortz,Yuriy Paderno,Vladimir Filippov,Satoko Abe,Ulrich Tutsch,Alain Junod###
(900473, 900473)
 Auer and H.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 6, 'K', 3],[14.0, 7, ',', 3],[125.0, 1000, 'G', 5]

B
###Specific heat and magnetization of a ZrB12 single crystal: characterization of a type II/1 superconductor|Yuxing Wang,Rolf Lortz,Yuriy Paderno,Vladimir Filippov,Satoko Abe,Ulrich Tutsch,Alain Junod###
(900485, 900485)
B 7, 136 (1973)].
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 6, 'K', 6],[2.0, 7, ',', 0],[113.0, 1000, 'G', 2]

H
###Specific heat and magnetization of a ZrB12 single crystal: characterization of a type II/1 superconductor|Yuxing Wang,Rolf Lortz,Yuriy Paderno,Vladimir Filippov,Satoko Abe,Ulrich Tutsch,Alain Junod###
(900516, 900516)
 The H-T<missing VAR> phase diagram based on specific-heat andmagnetization data yields Hc2(0) 550 G<missing VAR> for the bulk upper critical field,whereas the critical field defined by vanishing resistance is a surfacecritical field Hc3(0)  1000 G.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[182.0, 6, 'K', 8],[29.0, 7, ',', 2],[82.0, 1000, 'G', 0]

Cu
###The effect of Cu-doping on the magnetic and transport properties of La0.7Sr0.3MnO3|M. S. Kim,J. B. Yang,Q. Cai,X. D. Zhou,W. J. James,W. B. Yelon,P. E. Parris,D. Buddhikot,S. K. Malik###
(900615, 900615)
The effect of Cu-doping on the magnetic and transport properties of La0.7Sr0.3MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 10, 'K', 2],[279.0, 0.15, 'samples', 5],[301.0, 80, '%', 6]

La0.7Sr0.3MnO3
###The effect of Cu-doping on the magnetic and transport properties of La0.7Sr0.3MnO3|M. S. Kim,J. B. Yang,Q. Cai,X. D. Zhou,W. J. James,W. B. Yelon,P. E. Parris,D. Buddhikot,S. K. Malik###
(900633, 900639)
The effect of Cu-doping on the magnetic and transport properties of La0.7Sr0.3MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 10, 'K', 2],[255.0, 0.15, 'samples', 5],[277.0, 80, '%', 6]

Cu
###The effect of Cu-doping on the magnetic and transport properties of La0.7Sr0.3MnO3|M. S. Kim,J. B. Yang,Q. Cai,X. D. Zhou,W. J. James,W. B. Yelon,P. E. Parris,D. Buddhikot,S. K. Malik###
(900648, 900648)
 The effects of Cu-doping on the structural, magnetic, and transportproperties of La0.7Sr0.3Mn1-xCuxO3 (0 < x<missing VAR> < 0.20) have been studied usingneutron diffraction, magnetization and magnetoresistance (MR) measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 10, 'K', 1],[246.0, 0.15, 'samples', 4],[268.0, 80, '%', 5]

La0.7Sr0.3Mn1-x
###The effect of Cu-doping on the magnetic and transport properties of La0.7Sr0.3MnO3|M. S. Kim,J. B. Yang,Q. Cai,X. D. Zhou,W. J. James,W. B. Yelon,P. E. Parris,D. Buddhikot,S. K. Malik###
(900671, 900678)
 The effects of Cu-doping on the structural, magnetic, and transportproperties of La0.7Sr0.3Mn1-xCuxO3 (0 < x<missing VAR> < 0.20) have been studied usingneutron diffraction, magnetization and magnetoresistance (MR) measurements.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[71.0, 10, 'K', 1],[216.0, 0.15, 'samples', 4],[238.0, 80, '%', 5]

O3
###The effect of Cu-doping on the magnetic and transport properties of La0.7Sr0.3MnO3|M. S. Kim,J. B. Yang,Q. Cai,X. D. Zhou,W. J. James,W. B. Yelon,P. E. Parris,D. Buddhikot,S. K. Malik###
(900680, 900681)
 The effects of Cu-doping on the structural, magnetic, and transportproperties of La0.7Sr0.3Mn1-xCuxO3 (0 < x<missing VAR> < 0.20) have been studied usingneutron diffraction, magnetization and magnetoresistance (MR) measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 10, 'K', 1],[213.0, 0.15, 'samples', 4],[235.0, 80, '%', 5]

Cu
###The effect of Cu-doping on the magnetic and transport properties of La0.7Sr0.3MnO3|M. S. Kim,J. B. Yang,Q. Cai,X. D. Zhou,W. J. James,W. B. Yelon,P. E. Parris,D. Buddhikot,S. K. Malik###
(900780, 900780)
 Neutron diffraction data suggest that some of the Cuions have a Cu3 state in these compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 10, 'K', 1],[114.0, 0.15, 'samples', 2],[136.0, 80, '%', 3]

Cu3
###The effect of Cu-doping on the magnetic and transport properties of La0.7Sr0.3MnO3|M. S. Kim,J. B. Yang,Q. Cai,X. D. Zhou,W. J. James,W. B. Yelon,P. E. Parris,D. Buddhikot,S. K. Malik###
(900789, 900790)
 Neutron diffraction data suggest that some of the Cuions have a Cu3 state in these compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 10, 'K', 1],[104.0, 0.15, 'samples', 2],[126.0, 80, '%', 3]

Mn
###The effect of Cu-doping on the magnetic and transport properties of La0.7Sr0.3MnO3|M. S. Kim,J. B. Yang,Q. Cai,X. D. Zhou,W. J. James,W. B. Yelon,P. E. Parris,D. Buddhikot,S. K. Malik###
(900807, 900807)
 The substitution of Mn by Cu affectsthe Mn-O bond length and Mn-O-Mn bond angle resulting from the minimization ofthe distortion of the MnO6 octahedron.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 10, 'K', 2],[87.0, 0.15, 'samples', 1],[109.0, 80, '%', 2]

Cu
###The effect of Cu-doping on the magnetic and transport properties of La0.7Sr0.3MnO3|M. S. Kim,J. B. Yang,Q. Cai,X. D. Zhou,W. J. James,W. B. Yelon,P. E. Parris,D. Buddhikot,S. K. Malik###
(900811, 900811)
 The substitution of Mn by Cu affectsthe Mn-O bond length and Mn-O-Mn bond angle resulting from the minimization ofthe distortion of the MnO6 octahedron.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 10, 'K', 2],[83.0, 0.15, 'samples', 1],[105.0, 80, '%', 2]

Mn
###The effect of Cu-doping on the magnetic and transport properties of La0.7Sr0.3MnO3|M. S. Kim,J. B. Yang,Q. Cai,X. D. Zhou,W. J. James,W. B. Yelon,P. E. Parris,D. Buddhikot,S. K. Malik###
(900818, 900818)
 The substitution of Mn by Cu affectsthe Mn-O bond length and Mn-O-Mn bond angle resulting from the minimization ofthe distortion of the MnO6 octahedron.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 10, 'K', 2],[76.0, 0.15, 'samples', 1],[98.0, 80, '%', 2]

O
###The effect of Cu-doping on the magnetic and transport properties of La0.7Sr0.3MnO3|M. S. Kim,J. B. Yang,Q. Cai,X. D. Zhou,W. J. James,W. B. Yelon,P. E. Parris,D. Buddhikot,S. K. Malik###
(900820, 900820)
 The substitution of Mn by Cu affectsthe Mn-O bond length and Mn-O-Mn bond angle resulting from the minimization ofthe distortion of the MnO6 octahedron.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 10, 'K', 2],[74.0, 0.15, 'samples', 1],[96.0, 80, '%', 2]

Mn
###The effect of Cu-doping on the magnetic and transport properties of La0.7Sr0.3MnO3|M. S. Kim,J. B. Yang,Q. Cai,X. D. Zhou,W. J. James,W. B. Yelon,P. E. Parris,D. Buddhikot,S. K. Malik###
(900828, 900828)
 The substitution of Mn by Cu affectsthe Mn-O bond length and Mn-O-Mn bond angle resulting from the minimization ofthe distortion of the MnO6 octahedron.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 10, 'K', 2],[66.0, 0.15, 'samples', 1],[88.0, 80, '%', 2]

O
###The effect of Cu-doping on the magnetic and transport properties of La0.7Sr0.3MnO3|M. S. Kim,J. B. Yang,Q. Cai,X. D. Zhou,W. J. James,W. B. Yelon,P. E. Parris,D. Buddhikot,S. K. Malik###
(900830, 900830)
 The substitution of Mn by Cu affectsthe Mn-O bond length and Mn-O-Mn bond angle resulting from the minimization ofthe distortion of the MnO6 octahedron.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 10, 'K', 2],[64.0, 0.15, 'samples', 1],[86.0, 80, '%', 2]

Mn
###The effect of Cu-doping on the magnetic and transport properties of La0.7Sr0.3MnO3|M. S. Kim,J. B. Yang,Q. Cai,X. D. Zhou,W. J. James,W. B. Yelon,P. E. Parris,D. Buddhikot,S. K. Malik###
(900832, 900832)
 The substitution of Mn by Cu affectsthe Mn-O bond length and Mn-O-Mn bond angle resulting from the minimization ofthe distortion of the MnO6 octahedron.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 10, 'K', 2],[62.0, 0.15, 'samples', 1],[84.0, 80, '%', 2]

MnO6
###The effect of Cu-doping on the magnetic and transport properties of La0.7Sr0.3MnO3|M. S. Kim,J. B. Yang,Q. Cai,X. D. Zhou,W. J. James,W. B. Yelon,P. E. Parris,D. Buddhikot,S. K. Malik###
(900857, 900859)
 The substitution of Mn by Cu affectsthe Mn-O bond length and Mn-O-Mn bond angle resulting from the minimization ofthe distortion of the MnO6 octahedron.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 10, 'K', 2],[35.0, 0.15, 'samples', 1],[57.0, 80, '%', 2]

Cu3/Cu2
###The effect of Cu-doping on the magnetic and transport properties of La0.7Sr0.3MnO3|M. S. Kim,J. B. Yang,Q. Cai,X. D. Zhou,W. J. James,W. B. Yelon,P. E. Parris,D. Buddhikot,S. K. Malik###
(900938, 900942)
 The x<missing VAR> 0.15 sample shows the highest MR(80%), which might result from theco-existence of Cu3/Cu2 and the dilution effect of Cu-doping on the doubleexchange interaction.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[189.0, 10, 'K', 4],[44.0, 0.15, 'samples', 1],[22.0, 80, '%', 0]

Cu
###The effect of Cu-doping on the magnetic and transport properties of La0.7Sr0.3MnO3|M. S. Kim,J. B. Yang,Q. Cai,X. D. Zhou,W. J. James,W. B. Yelon,P. E. Parris,D. Buddhikot,S. K. Malik###
(900954, 900954)
 The x<missing VAR> 0.15 sample shows the highest MR(80%), which might result from theco-existence of Cu3/Cu2 and the dilution effect of Cu-doping on the doubleexchange interaction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, 10, 'K', 4],[60.0, 0.15, 'samples', 1],[38.0, 80, '%', 0]

CoO/Co
###Reversing the training effect in exchange biased CoO/Co bilayers|Steven Brems,Dieter Buntinx,Kristiaan Temst,Chris Van Haesendonck,Florin Radu,Hartmut Zabel###
(900992, 900995)
Reversing the training effect in exchange biased CoO/Co bilayers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

CoO/Co
###Reversing the training effect in exchange biased CoO/Co bilayers|Steven Brems,Dieter Buntinx,Kristiaan Temst,Chris Van Haesendonck,Florin Radu,Hartmut Zabel###
(901025, 901028)
 We performed a detailed study of the training effect in exchange biasedCoO/Co bilayers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

CoO
###Reversing the training effect in exchange biased CoO/Co bilayers|Steven Brems,Dieter Buntinx,Kristiaan Temst,Chris Van Haesendonck,Florin Radu,Hartmut Zabel###
(901075, 901076)
 High-resolution measurements of the anisotropicmagnetoresistance (AMR) are consistent with nucleation of magnetic domains inthe antiferromagnetic CoO layer during the first magnetization reversal.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Reversing the training effect in exchange biased CoO/Co bilayers|Steven Brems,Dieter Buntinx,Kristiaan Temst,Chris Van Haesendonck,Florin Radu,Hartmut Zabel###
(901114, 901114)
 Thisaccounts for the enhanced spin rotation observed in the ferromagnetic Co layerfor all subsequent reversals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V0
###Dependence of Modulation Amplitude on Electron Density in Unidirectional Lateral Superlattices: The Effect of the Thickness of the Two-dimensional Electron Gas|Akira Endo,Yasuhiro Iye###
(901381, 901382)
 The amplitude V0 of unidirectional periodic potential modulation introducedby a surface grating into a two-dimensional electron gas (2DEG) formed atAlGaAs/GaAs heterointerface is measured as a function of electron density neby analyzing commensurability oscillation of the magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[282.0, 2, 'DEG', 4]

AlGaAs/GaAs
###Dependence of Modulation Amplitude on Electron Density in Unidirectional Lateral Superlattices: The Effect of the Thickness of the Two-dimensional Electron Gas|Akira Endo,Yasuhiro Iye###
(901429, 901434)
 The amplitude V0 of unidirectional periodic potential modulation introducedby a surface grating into a two-dimensional electron gas (2DEG) formed atAlGaAs/GaAs heterointerface is measured as a function of electron density neby analyzing commensurability oscillation of the magnetoresistance.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[230.0, 2, 'DEG', 4]

V0
###Dependence of Modulation Amplitude on Electron Density in Unidirectional Lateral Superlattices: The Effect of the Thickness of the Two-dimensional Electron Gas|Akira Endo,Yasuhiro Iye###
(901533, 901534)
 The amplitude decreases with increasing density, with the rated<missing VAR>V0/dne<missing VAR> roughly an order of magnitude larger for the former method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 2, 'DEG', 2]

F
###Giant Tunneling Magnetoresistance, Glassiness, and the Energy Landscape at Nanoscale Cluster Coexistence|Sanjeev Kumar,Chandra Shekhar Mohapatra,Pinaki Majumdar###
(901740, 901740)
 We present microscopic results on the giant tunneling magnetoresistance thatarises from the nanoscale coexistence of ferromagnetic metallic (FMM) andantiferromagnetic insulating (AFI) clusters in a disordered two dimensionalelectron system with competing double exchange and superexchange interactions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Giant Tunneling Magnetoresistance, Glassiness, and the Energy Landscape at Nanoscale Cluster Coexistence|Sanjeev Kumar,Chandra Shekhar Mohapatra,Pinaki Majumdar###
(901755, 901755)
 We present microscopic results on the giant tunneling magnetoresistance thatarises from the nanoscale coexistence of ferromagnetic metallic (FMM) andantiferromagnetic insulating (AFI) clusters in a disordered two dimensionalelectron system with competing double exchange and superexchange interactions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Giant Tunneling Magnetoresistance, Glassiness, and the Energy Landscape at Nanoscale Cluster Coexistence|Sanjeev Kumar,Chandra Shekhar Mohapatra,Pinaki Majumdar###
(901841, 901841)
 Atcoexistence, the isotropic O(3) model shows signs of slow relaxation, and has ahigh density of low energy metastable states, but no genuine glassiness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(FC)
###Giant Tunneling Magnetoresistance, Glassiness, and the Energy Landscape at Nanoscale Cluster Coexistence|Sanjeev Kumar,Chandra Shekhar Mohapatra,Pinaki Majumdar###
(901949, 901952)
However, in the presence of weak magnetic anisotropy, and below a fielddependent irreversibility temperature T<missing VAR>irr, the response on field cooling(FC) differs distinctly from that on zero field cooling (Z<missing VAR>FC).
Featurization successful!
0,0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Giant Tunneling Magnetoresistance, Glassiness, and the Energy Landscape at Nanoscale Cluster Coexistence|Sanjeev Kumar,Chandra Shekhar Mohapatra,Pinaki Majumdar###
(901973, 901973)
However, in the presence of weak magnetic anisotropy, and below a fielddependent irreversibility temperature T<missing VAR>irr, the response on field cooling(FC) differs distinctly from that on zero field cooling (Z<missing VAR>FC).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###LCAO model for 3D Fermi surface of high-T_c cuprate Tl_2Ba_2CuO_{6+delta}|Martin Stoev,Todor Mishonov###
(902361, 902361)
L<missing VAR>CAO model for 3D Fermi surface of high-Tc cuprate Tl2Ba2CuO6delta.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 3, 'D', 0],[108.0, 2, ',', 1],[251.0, 3, 'D', 4]

O
###LCAO model for 3D Fermi surface of high-T_c cuprate Tl_2Ba_2CuO_{6+delta}|Martin Stoev,Todor Mishonov###
(902363, 902363)
L<missing VAR>CAO model for 3D Fermi surface of high-Tc cuprate Tl2Ba2CuO6delta.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 3, 'D', 0],[106.0, 2, ',', 1],[249.0, 3, 'D', 4]

Tl2Ba2CuO6
###LCAO model for 3D Fermi surface of high-T_c cuprate Tl_2Ba_2CuO_{6+delta}|Martin Stoev,Todor Mishonov###
(902383, 902389)
L<missing VAR>CAO model for 3D Fermi surface of high-Tc cuprate Tl2Ba2CuO6delta.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5454545454545454,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.09090909090909091,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 3, 'D', 0],[80.0, 2, ',', 1],[223.0, 3, 'D', 4]

S
###LCAO model for 3D Fermi surface of high-T_c cuprate Tl_2Ba_2CuO_{6+delta}|Martin Stoev,Todor Mishonov###
(902416, 902416)
 A simple analytical formula for three-dimensional Fermi surface (3D<missing VAR> FS) ofrm Tl2Ba2CuO6delta is derived in the framework of L<missing VAR>CAOapproximation spanned over Cu4s<missing VAR>, Cu3dx2-y<missing VAR>2, O2px and O2pystates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 3, 'D', 1],[53.0, 2, ',', 0],[196.0, 3, 'D', 3]

Tl2Ba2CuO6
###LCAO model for 3D Fermi surface of high-T_c cuprate Tl_2Ba_2CuO_{6+delta}|Martin Stoev,Todor Mishonov###
(902424, 902430)
 A simple analytical formula for three-dimensional Fermi surface (3D<missing VAR> FS) ofrm Tl2Ba2CuO6delta is derived in the framework of L<missing VAR>CAOapproximation spanned over Cu4s<missing VAR>, Cu3dx2-y<missing VAR>2, O2px and O2pystates.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5454545454545454,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.09090909090909091,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 3, 'D', 1],[39.0, 2, ',', 0],[182.0, 3, 'D', 3]

C
###LCAO model for 3D Fermi surface of high-T_c cuprate Tl_2Ba_2CuO_{6+delta}|Martin Stoev,Todor Mishonov###
(902446, 902446)
 A simple analytical formula for three-dimensional Fermi surface (3D<missing VAR> FS) ofrm Tl2Ba2CuO6delta is derived in the framework of L<missing VAR>CAOapproximation spanned over Cu4s<missing VAR>, Cu3dx2-y<missing VAR>2, O2px and O2pystates.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 3, 'D', 1],[23.0, 2, ',', 0],[166.0, 3, 'D', 3]

O
###LCAO model for 3D Fermi surface of high-T_c cuprate Tl_2Ba_2CuO_{6+delta}|Martin Stoev,Todor Mishonov###
(902448, 902448)
 A simple analytical formula for three-dimensional Fermi surface (3D<missing VAR> FS) ofrm Tl2Ba2CuO6delta is derived in the framework of L<missing VAR>CAOapproximation spanned over Cu4s<missing VAR>, Cu3dx2-y<missing VAR>2, O2px and O2pystates.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 3, 'D', 1],[21.0, 2, ',', 0],[164.0, 3, 'D', 3]

Cu4
###LCAO model for 3D Fermi surface of high-T_c cuprate Tl_2Ba_2CuO_{6+delta}|Martin Stoev,Todor Mishonov###
(902457, 902458)
 A simple analytical formula for three-dimensional Fermi surface (3D<missing VAR> FS) ofrm Tl2Ba2CuO6delta is derived in the framework of L<missing VAR>CAOapproximation spanned over Cu4s<missing VAR>, Cu3dx2-y<missing VAR>2, O2px and O2pystates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 3, 'D', 1],[11.0, 2, ',', 0],[154.0, 3, 'D', 3]

Cu3
###LCAO model for 3D Fermi surface of high-T_c cuprate Tl_2Ba_2CuO_{6+delta}|Martin Stoev,Todor Mishonov###
(902462, 902463)
 A simple analytical formula for three-dimensional Fermi surface (3D<missing VAR> FS) ofrm Tl2Ba2CuO6delta is derived in the framework of L<missing VAR>CAOapproximation spanned over Cu4s<missing VAR>, Cu3dx2-y<missing VAR>2, O2px and O2pystates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 3, 'D', 1],[6.0, 2, ',', 0],[149.0, 3, 'D', 3]

O2
###LCAO model for 3D Fermi surface of high-T_c cuprate Tl_2Ba_2CuO_{6+delta}|Martin Stoev,Todor Mishonov###
(902472, 902473)
 A simple analytical formula for three-dimensional Fermi surface (3D<missing VAR> FS) ofrm Tl2Ba2CuO6delta is derived in the framework of L<missing VAR>CAOapproximation spanned over Cu4s<missing VAR>, Cu3dx2-y<missing VAR>2, O2px and O2pystates.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 3, 'D', 1],[3.0, 2, ',', 0],[139.0, 3, 'D', 3]

O2
###LCAO model for 3D Fermi surface of high-T_c cuprate Tl_2Ba_2CuO_{6+delta}|Martin Stoev,Todor Mishonov###
(902479, 902480)
 A simple analytical formula for three-dimensional Fermi surface (3D<missing VAR> FS) ofrm Tl2Ba2CuO6delta is derived in the framework of L<missing VAR>CAOapproximation spanned over Cu4s<missing VAR>, Cu3dx2-y<missing VAR>2, O2px and O2pystates.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 3, 'D', 1],[10.0, 2, ',', 0],[132.0, 3, 'D', 3]

FS
###LCAO model for 3D Fermi surface of high-T_c cuprate Tl_2Ba_2CuO_{6+delta}|Martin Stoev,Todor Mishonov###
(902516, 902517)
 This analytical result can be used for fitting of experimental data for3D<missing VAR> FS such as polar angle magnetoresistance oscillation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 3, 'D', 2],[47.0, 2, ',', 1],[95.0, 3, 'D', 2]

Cu4
###LCAO model for 3D Fermi surface of high-T_c cuprate Tl_2Ba_2CuO_{6+delta}|Martin Stoev,Todor Mishonov###
(902557, 902558)
 The model takes intoaccount effective copper-copper hopping amplitude tss between Cu4s<missing VAR> orbitalsfrom neighbouring cuo layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[189.0, 3, 'D', 3],[88.0, 2, ',', 2],[54.0, 3, 'D', 1]

FS
###LCAO model for 3D Fermi surface of high-T_c cuprate Tl_2Ba_2CuO_{6+delta}|Martin Stoev,Todor Mishonov###
(902614, 902615)
 The acceptable correspondence with theexperimental data gives a hint that the tss amplitude dominates in formationof coherent 3D FS, and other oxygen-oxygen and copper-oxygen amplitudes arerather negligible.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[246.0, 3, 'D', 4],[145.0, 2, ',', 3],[2.0, 3, 'D', 0]

C
###LCAO model for 3D Fermi surface of high-T_c cuprate Tl_2Ba_2CuO_{6+delta}|Martin Stoev,Todor Mishonov###
(902717, 902717)
 The thin superconductor layer is the source-drain channel of thelayered structure where an AC current is applied.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[349.0, 3, 'D', 6],[248.0, 2, ',', 5],[105.0, 3, 'D', 2]

SrCo1-x
###Competition between ferromagnetism and spin glass: the key for large magnetoresistance in oxygen deficient perovskites SrCo1-xMxO3-d (M = Nb, Ru)|T. Motohashi,V. Caignaert,V. Pralong,M. Hervieu,A. Maignan,B. Raveau###
(902764, 902768)
Competition between ferromagnetism and spin glass the key for large magnetoresistance in oxygen deficient perovskites SrCo1-xMxO3-d (M<missing VAR>  Nb, Ru).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[256.0, 30, '%', 3],[260.0, 5, 'K', 3],[264.0, 7, 'T', 3]

O3-d
###Competition between ferromagnetism and spin glass: the key for large magnetoresistance in oxygen deficient perovskites SrCo1-xMxO3-d (M = Nb, Ru)|T. Motohashi,V. Caignaert,V. Pralong,M. Hervieu,A. Maignan,B. Raveau###
(902770, 902773)
Competition between ferromagnetism and spin glass the key for large magnetoresistance in oxygen deficient perovskites SrCo1-xMxO3-d (M<missing VAR>  Nb, Ru).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[251.0, 30, '%', 3],[255.0, 5, 'K', 3],[259.0, 7, 'T', 3]

Nb
###Competition between ferromagnetism and spin glass: the key for large magnetoresistance in oxygen deficient perovskites SrCo1-xMxO3-d (M = Nb, Ru)|T. Motohashi,V. Caignaert,V. Pralong,M. Hervieu,A. Maignan,B. Raveau###
(902779, 902779)
Competition between ferromagnetism and spin glass the key for large magnetoresistance in oxygen deficient perovskites SrCo1-xMxO3-d (M<missing VAR>  Nb, Ru).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[245.0, 30, '%', 3],[249.0, 5, 'K', 3],[253.0, 7, 'T', 3]

Ru
###Competition between ferromagnetism and spin glass: the key for large magnetoresistance in oxygen deficient perovskites SrCo1-xMxO3-d (M = Nb, Ru)|T. Motohashi,V. Caignaert,V. Pralong,M. Hervieu,A. Maignan,B. Raveau###
(902782, 902782)
Competition between ferromagnetism and spin glass the key for large magnetoresistance in oxygen deficient perovskites SrCo1-xMxO3-d (M<missing VAR>  Nb, Ru).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[242.0, 30, '%', 3],[246.0, 5, 'K', 3],[250.0, 7, 'T', 3]

SrCo1-x
###Competition between ferromagnetism and spin glass: the key for large magnetoresistance in oxygen deficient perovskites SrCo1-xMxO3-d (M = Nb, Ru)|T. Motohashi,V. Caignaert,V. Pralong,M. Hervieu,A. Maignan,B. Raveau###
(902808, 902812)
 The magnetic and magnetotransport properties of the oxygen deficientperovskites, SrCo1-xMxO3-d with M<missing VAR>  Nb and Ru, were investigated.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[212.0, 30, '%', 2],[216.0, 5, 'K', 2],[220.0, 7, 'T', 2]

O3-d
###Competition between ferromagnetism and spin glass: the key for large magnetoresistance in oxygen deficient perovskites SrCo1-xMxO3-d (M = Nb, Ru)|T. Motohashi,V. Caignaert,V. Pralong,M. Hervieu,A. Maignan,B. Raveau###
(902814, 902817)
 The magnetic and magnetotransport properties of the oxygen deficientperovskites, SrCo1-xMxO3-d with M<missing VAR>  Nb and Ru, were investigated.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[207.0, 30, '%', 2],[211.0, 5, 'K', 2],[215.0, 7, 'T', 2]

Nb
###Competition between ferromagnetism and spin glass: the key for large magnetoresistance in oxygen deficient perovskites SrCo1-xMxO3-d (M = Nb, Ru)|T. Motohashi,V. Caignaert,V. Pralong,M. Hervieu,A. Maignan,B. Raveau###
(902824, 902824)
 The magnetic and magnetotransport properties of the oxygen deficientperovskites, SrCo1-xMxO3-d with M<missing VAR>  Nb and Ru, were investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[200.0, 30, '%', 2],[204.0, 5, 'K', 2],[208.0, 7, 'T', 2]

Ru
###Competition between ferromagnetism and spin glass: the key for large magnetoresistance in oxygen deficient perovskites SrCo1-xMxO3-d (M = Nb, Ru)|T. Motohashi,V. Caignaert,V. Pralong,M. Hervieu,A. Maignan,B. Raveau###
(902828, 902828)
 The magnetic and magnetotransport properties of the oxygen deficientperovskites, SrCo1-xMxO3-d with M<missing VAR>  Nb and Ru, were investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[196.0, 30, '%', 2],[200.0, 5, 'K', 2],[204.0, 7, 'T', 2]

Nb
###Competition between ferromagnetism and spin glass: the key for large magnetoresistance in oxygen deficient perovskites SrCo1-xMxO3-d (M = Nb, Ru)|T. Motohashi,V. Caignaert,V. Pralong,M. Hervieu,A. Maignan,B. Raveau###
(902838, 902838)
 Both Nb- andRu-substituted cobaltites are weak ferromagnets, with transition temperaturesTm of 130-150 K and 130-180 K, respectively, and both exhibit a spin glassbehavior at temperatures below Tf  80-90 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, 30, '%', 1],[190.0, 5, 'K', 1],[194.0, 7, 'T', 1]

Ru
###Competition between ferromagnetism and spin glass: the key for large magnetoresistance in oxygen deficient perovskites SrCo1-xMxO3-d (M = Nb, Ru)|T. Motohashi,V. Caignaert,V. Pralong,M. Hervieu,A. Maignan,B. Raveau###
(902844, 902844)
 Both Nb- andRu-substituted cobaltites are weak ferromagnets, with transition temperaturesTm of 130-150 K and 130-180 K, respectively, and both exhibit a spin glassbehavior at temperatures below Tf  80-90 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[180.0, 30, '%', 1],[184.0, 5, 'K', 1],[188.0, 7, 'T', 1]

Tm
###Competition between ferromagnetism and spin glass: the key for large magnetoresistance in oxygen deficient perovskites SrCo1-xMxO3-d (M = Nb, Ru)|T. Motohashi,V. Caignaert,V. Pralong,M. Hervieu,A. Maignan,B. Raveau###
(902864, 902864)
 Both Nb- andRu-substituted cobaltites are weak ferromagnets, with transition temperaturesTm of 130-150 K and 130-180 K, respectively, and both exhibit a spin glassbehavior at temperatures below Tf  80-90 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 30, '%', 1],[164.0, 5, 'K', 1],[168.0, 7, 'T', 1]

K
###Competition between ferromagnetism and spin glass: the key for large magnetoresistance in oxygen deficient perovskites SrCo1-xMxO3-d (M = Nb, Ru)|T. Motohashi,V. Caignaert,V. Pralong,M. Hervieu,A. Maignan,B. Raveau###
(902872, 902872)
 Both Nb- andRu-substituted cobaltites are weak ferromagnets, with transition temperaturesTm of 130-150 K and 130-180 K, respectively, and both exhibit a spin glassbehavior at temperatures below Tf  80-90 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 30, '%', 1],[156.0, 5, 'K', 1],[160.0, 7, 'T', 1]

K
###Competition between ferromagnetism and spin glass: the key for large magnetoresistance in oxygen deficient perovskites SrCo1-xMxO3-d (M = Nb, Ru)|T. Motohashi,V. Caignaert,V. Pralong,M. Hervieu,A. Maignan,B. Raveau###
(902880, 902880)
 Both Nb- andRu-substituted cobaltites are weak ferromagnets, with transition temperaturesTm of 130-150 K and 130-180 K, respectively, and both exhibit a spin glassbehavior at temperatures below Tf  80-90 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 30, '%', 1],[148.0, 5, 'K', 1],[152.0, 7, 'T', 1]

K
###Competition between ferromagnetism and spin glass: the key for large magnetoresistance in oxygen deficient perovskites SrCo1-xMxO3-d (M = Nb, Ru)|T. Motohashi,V. Caignaert,V. Pralong,M. Hervieu,A. Maignan,B. Raveau###
(902914, 902914)
 Both Nb- andRu-substituted cobaltites are weak ferromagnets, with transition temperaturesTm of 130-150 K and 130-180 K, respectively, and both exhibit a spin glassbehavior at temperatures below Tf  80-90 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 30, '%', 1],[114.0, 5, 'K', 1],[118.0, 7, 'T', 1]

Co4
###Competition between ferromagnetism and spin glass: the key for large magnetoresistance in oxygen deficient perovskites SrCo1-xMxO3-d (M = Nb, Ru)|T. Motohashi,V. Caignaert,V. Pralong,M. Hervieu,A. Maignan,B. Raveau###
(902952, 902953)
 It is demonstrated that thereexists a strong competition between ferromagnetism and spin glass state, whereCo4 induces ferromagnetism, whereas Nb or Ru substitution at the cobalt sitesinduces magnetic disorder, and this particular magnetic behavior is the originof large negative magnetoresistance of these oxides, reaching up to 30% at 5 Kin 7 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 30, '%', 0],[75.0, 5, 'K', 0],[79.0, 7, 'T', 0]

Nb
###Competition between ferromagnetism and spin glass: the key for large magnetoresistance in oxygen deficient perovskites SrCo1-xMxO3-d (M = Nb, Ru)|T. Motohashi,V. Caignaert,V. Pralong,M. Hervieu,A. Maignan,B. Raveau###
(902962, 902962)
 It is demonstrated that thereexists a strong competition between ferromagnetism and spin glass state, whereCo4 induces ferromagnetism, whereas Nb or Ru substitution at the cobalt sitesinduces magnetic disorder, and this particular magnetic behavior is the originof large negative magnetoresistance of these oxides, reaching up to 30% at 5 Kin 7 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 30, '%', 0],[66.0, 5, 'K', 0],[70.0, 7, 'T', 0]

Ru
###Competition between ferromagnetism and spin glass: the key for large magnetoresistance in oxygen deficient perovskites SrCo1-xMxO3-d (M = Nb, Ru)|T. Motohashi,V. Caignaert,V. Pralong,M. Hervieu,A. Maignan,B. Raveau###
(902966, 902966)
 It is demonstrated that thereexists a strong competition between ferromagnetism and spin glass state, whereCo4 induces ferromagnetism, whereas Nb or Ru substitution at the cobalt sitesinduces magnetic disorder, and this particular magnetic behavior is the originof large negative magnetoresistance of these oxides, reaching up to 30% at 5 Kin 7 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 30, '%', 0],[62.0, 5, 'K', 0],[66.0, 7, 'T', 0]

Nb
###Competition between ferromagnetism and spin glass: the key for large magnetoresistance in oxygen deficient perovskites SrCo1-xMxO3-d (M = Nb, Ru)|T. Motohashi,V. Caignaert,V. Pralong,M. Hervieu,A. Maignan,B. Raveau###
(903041, 903041)
 The differences between Nb- and Ru-substituted cobaltites are discussedon the basis of the different electronic configuration of niobium and rutheniumcations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 30, '%', 1],[13.0, 5, 'K', 1],[9.0, 7, 'T', 1]

Ru
###Competition between ferromagnetism and spin glass: the key for large magnetoresistance in oxygen deficient perovskites SrCo1-xMxO3-d (M = Nb, Ru)|T. Motohashi,V. Caignaert,V. Pralong,M. Hervieu,A. Maignan,B. Raveau###
(903046, 903046)
 The differences between Nb- and Ru-substituted cobaltites are discussedon the basis of the different electronic configuration of niobium and rutheniumcations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 30, '%', 1],[18.0, 5, 'K', 1],[14.0, 7, 'T', 1]

(CH3)0.9ReO3
###Possible Localization Behavior of the Inherent Conducting Polymer (CH$_3$)$_{0.9}$ReO$_3$|E. --W. Scheidt,R. Miller,Ch. Helbig,G. Eickerling,F. Mayr,R. Herrmann,P. Schwab,W. Scherer###
(903109, 903117)
Possible Localization Behavior of the Inherent Conducting Polymer (CH3)0.9ReO3.
Featurization terminated normally.
0.3552631578947369,0,0,0,0,0.11842105263157895,0,0.39473684210526316,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13157894736842105,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 30, 'mK', 3],[140.0, 30, 'K', 3],[144.0, 30, 'K', 4],[212.0, 2, 'K', 4],[235.0, 7, 'T', 5]

O
###Possible Localization Behavior of the Inherent Conducting Polymer (CH$_3$)$_{0.9}$ReO$_3$|E. --W. Scheidt,R. Miller,Ch. Helbig,G. Eickerling,F. Mayr,R. Herrmann,P. Schwab,W. Scherer###
(903129, 903129)
 Polymeric methyltrioxorhenium (poly-MTO) represents the first example of aninherent conducting organometallic oxide.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 30, 'mK', 2],[128.0, 30, 'K', 2],[132.0, 30, 'K', 3],[200.0, 2, 'K', 3],[223.0, 7, 'T', 4]

In
###Possible Localization Behavior of the Inherent Conducting Polymer (CH$_3$)$_{0.9}$ReO$_3$|E. --W. Scheidt,R. Miller,Ch. Helbig,G. Eickerling,F. Mayr,R. Herrmann,P. Schwab,W. Scherer###
(903186, 903186)
 In thisstudy we present resistivity data down to 30 mK which exhibit a crossover froma metallic (d<missing VAR>rho/dT > 0) to an insulating (d<missing VAR>rho/dT < 0) behavior atabout 30 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 30, 'mK', 0],[71.0, 30, 'K', 0],[75.0, 30, 'K', 1],[143.0, 2, 'K', 1],[166.0, 7, 'T', 2]

Re
###Possible Localization Behavior of the Inherent Conducting Polymer (CH$_3$)$_{0.9}$ReO$_3$|E. --W. Scheidt,R. Miller,Ch. Helbig,G. Eickerling,F. Mayr,R. Herrmann,P. Schwab,W. Scherer###
(903418, 903418)
Temperature dependent magnetization and specific heat measurements in variousmagnetic fields indicate that the unusual resistivity behavior may be driven byspatial localization of the d<missing VAR>1 moments at the Re atoms.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[214.0, 30, 'mK', 3],[161.0, 30, 'K', 3],[157.0, 30, 'K', 2],[89.0, 2, 'K', 2],[66.0, 7, 'T', 1]

LaRu4P12
###Fermi surface of the filled-skutterudite superconductor LaRu4P12: A clue to the origin of the metal-insulator transition in PrRu4P12|S. R. Saha,H. Sugawara,Y. Aoki,H. Sato,Y. Inada,H. Shishido,R. Settai,Y. Onuki,H. Harima###
(903445, 903449)
Fermi surface of the filled-skutterudite superconductor LaRu4P12 A clue to the origin of the metal-insulator transition in PrRu4P12.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7058823529411765,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23529411764705882,0,0,0,0,0,0,0,0,0,0,0,0,0.058823529411764705,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[210.0, 1, ',', 2],[212.0, 0, ',', 2],[263.0, 0, ',', 3]

PrRu4P12
###Fermi surface of the filled-skutterudite superconductor LaRu4P12: A clue to the origin of the metal-insulator transition in PrRu4P12|S. R. Saha,H. Sugawara,Y. Aoki,H. Sato,Y. Inada,H. Shishido,R. Settai,Y. Onuki,H. Harima###
(903473, 903477)
Fermi surface of the filled-skutterudite superconductor LaRu4P12 A clue to the origin of the metal-insulator transition in PrRu4P12.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7058823529411765,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23529411764705882,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.058823529411764705,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[182.0, 1, ',', 2],[184.0, 0, ',', 2],[235.0, 0, ',', 3]

LaRu4P12
###Fermi surface of the filled-skutterudite superconductor LaRu4P12: A clue to the origin of the metal-insulator transition in PrRu4P12|S. R. Saha,H. Sugawara,Y. Aoki,H. Sato,Y. Inada,H. Shishido,R. Settai,Y. Onuki,H. Harima###
(903517, 903521)
 We report the de Haas-van Alphen (d<missing VAR>HvA) effect and magnetoresistance in thefilled-skutterudite superconductor LaRu4P12, which is a reference material ofPrRu4P12 that exhibits a metal-insulator (M<missing VAR>-I) transition at TMI60 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7058823529411765,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23529411764705882,0,0,0,0,0,0,0,0,0,0,0,0,0.058823529411764705,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 1, ',', 1],[140.0, 0, ',', 1],[191.0, 0, ',', 2]

PrRu4P12
###Fermi surface of the filled-skutterudite superconductor LaRu4P12: A clue to the origin of the metal-insulator transition in PrRu4P12|S. R. Saha,H. Sugawara,Y. Aoki,H. Sato,Y. Inada,H. Shishido,R. Settai,Y. Onuki,H. Harima###
(903537, 903541)
 We report the de Haas-van Alphen (d<missing VAR>HvA) effect and magnetoresistance in thefilled-skutterudite superconductor LaRu4P12, which is a reference material ofPrRu4P12 that exhibits a metal-insulator (M<missing VAR>-I) transition at TMI60 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7058823529411765,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23529411764705882,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.058823529411764705,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 1, ',', 1],[120.0, 0, ',', 1],[171.0, 0, ',', 2]

I
###Fermi surface of the filled-skutterudite superconductor LaRu4P12: A clue to the origin of the metal-insulator transition in PrRu4P12|S. R. Saha,H. Sugawara,Y. Aoki,H. Sato,Y. Inada,H. Shishido,R. Settai,Y. Onuki,H. Harima###
(903556, 903556)
 We report the de Haas-van Alphen (d<missing VAR>HvA) effect and magnetoresistance in thefilled-skutterudite superconductor LaRu4P12, which is a reference material ofPrRu4P12 that exhibits a metal-insulator (M<missing VAR>-I) transition at TMI60 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 1, ',', 1],[105.0, 0, ',', 1],[156.0, 0, ',', 2]

I60
###Fermi surface of the filled-skutterudite superconductor LaRu4P12: A clue to the origin of the metal-insulator transition in PrRu4P12|S. R. Saha,H. Sugawara,Y. Aoki,H. Sato,Y. Inada,H. Shishido,R. Settai,Y. Onuki,H. Harima###
(903565, 903566)
 We report the de Haas-van Alphen (d<missing VAR>HvA) effect and magnetoresistance in thefilled-skutterudite superconductor LaRu4P12, which is a reference material ofPrRu4P12 that exhibits a metal-insulator (M<missing VAR>-I) transition at TMI60 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 1, ',', 1],[95.0, 0, ',', 1],[146.0, 0, ',', 2]

K
###Fermi surface of the filled-skutterudite superconductor LaRu4P12: A clue to the origin of the metal-insulator transition in PrRu4P12|S. R. Saha,H. Sugawara,Y. Aoki,H. Sato,Y. Inada,H. Shishido,R. Settai,Y. Onuki,H. Harima###
(903568, 903568)
 We report the de Haas-van Alphen (d<missing VAR>HvA) effect and magnetoresistance in thefilled-skutterudite superconductor LaRu4P12, which is a reference material ofPrRu4P12 that exhibits a metal-insulator (M<missing VAR>-I) transition at TMI60 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 1, ',', 1],[93.0, 0, ',', 1],[144.0, 0, ',', 2]

(FS)
###Fermi surface of the filled-skutterudite superconductor LaRu4P12: A clue to the origin of the metal-insulator transition in PrRu4P12|S. R. Saha,H. Sugawara,Y. Aoki,H. Sato,Y. Inada,H. Shishido,R. Settai,Y. Onuki,H. Harima###
(903592, 903595)
 Theobserved d<missing VAR>HvA branches for the main Fermi surface (FS) are well explained bythe band-structure calculation, using the full potential linearizedaugmented-plane-wave method with the local-density approximation, suggesting anesting instability with q<missing VAR> (1,0,0) in the main multiply connected FS asexpected also in PrRu4P12.
Featurization successful!
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 1, ',', 0],[66.0, 0, ',', 0],[117.0, 0, ',', 1]

FS
###Fermi surface of the filled-skutterudite superconductor LaRu4P12: A clue to the origin of the metal-insulator transition in PrRu4P12|S. R. Saha,H. Sugawara,Y. Aoki,H. Sato,Y. Inada,H. Shishido,R. Settai,Y. Onuki,H. Harima###
(903676, 903677)
 Theobserved d<missing VAR>HvA branches for the main Fermi surface (FS) are well explained bythe band-structure calculation, using the full potential linearizedaugmented-plane-wave method with the local-density approximation, suggesting anesting instability with q<missing VAR> (1,0,0) in the main multiply connected FS asexpected also in PrRu4P12.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 1, ',', 0],[15.0, 0, ',', 0],[35.0, 0, ',', 1]

PrRu4P12
###Fermi surface of the filled-skutterudite superconductor LaRu4P12: A clue to the origin of the metal-insulator transition in PrRu4P12|S. R. Saha,H. Sugawara,Y. Aoki,H. Sato,Y. Inada,H. Shishido,R. Settai,Y. Onuki,H. Harima###
(903688, 903692)
 Theobserved d<missing VAR>HvA branches for the main Fermi surface (FS) are well explained bythe band-structure calculation, using the full potential linearizedaugmented-plane-wave method with the local-density approximation, suggesting anesting instability with q<missing VAR> (1,0,0) in the main multiply connected FS asexpected also in PrRu4P12.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7058823529411765,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23529411764705882,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.058823529411764705,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 1, ',', 0],[27.0, 0, ',', 0],[20.0, 0, ',', 1]

La
###Fermi surface of the filled-skutterudite superconductor LaRu4P12: A clue to the origin of the metal-insulator transition in PrRu4P12|S. R. Saha,H. Sugawara,Y. Aoki,H. Sato,Y. Inada,H. Shishido,R. Settai,Y. Onuki,H. Harima###
(903747, 903747)
 Observed cyclotron effective masses of(2.6-11.8)m<missing VAR>0, which are roughly twice the calculated masses, indicate thelarge mass enhancement even in the La-skutterudites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 1, ',', 1],[86.0, 0, ',', 1],[35.0, 0, ',', 0]

FS
###Fermi surface of the filled-skutterudite superconductor LaRu4P12: A clue to the origin of the metal-insulator transition in PrRu4P12|S. R. Saha,H. Sugawara,Y. Aoki,H. Sato,Y. Inada,H. Shishido,R. Settai,Y. Onuki,H. Harima###
(903756, 903757)
 Comparing the FS betweenLaRu4P12 and PrRu4P12, an essential role of c-f hybridization cooperating withthe FS nesting in driving the the M<missing VAR>-I transition in PrRu4P12 has beenclarified.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 1, ',', 2],[95.0, 0, ',', 2],[44.0, 0, ',', 1]

LaRu4P12
###Fermi surface of the filled-skutterudite superconductor LaRu4P12: A clue to the origin of the metal-insulator transition in PrRu4P12|S. R. Saha,H. Sugawara,Y. Aoki,H. Sato,Y. Inada,H. Shishido,R. Settai,Y. Onuki,H. Harima###
(903762, 903766)
 Comparing the FS betweenLaRu4P12 and PrRu4P12, an essential role of c-f hybridization cooperating withthe FS nesting in driving the the M<missing VAR>-I transition in PrRu4P12 has beenclarified.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7058823529411765,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23529411764705882,0,0,0,0,0,0,0,0,0,0,0,0,0.058823529411764705,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 1, ',', 2],[101.0, 0, ',', 2],[50.0, 0, ',', 1]

PrRu4P12
###Fermi surface of the filled-skutterudite superconductor LaRu4P12: A clue to the origin of the metal-insulator transition in PrRu4P12|S. R. Saha,H. Sugawara,Y. Aoki,H. Sato,Y. Inada,H. Shishido,R. Settai,Y. Onuki,H. Harima###
(903770, 903774)
 Comparing the FS betweenLaRu4P12 and PrRu4P12, an essential role of c-f hybridization cooperating withthe FS nesting in driving the the M<missing VAR>-I transition in PrRu4P12 has beenclarified.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7058823529411765,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23529411764705882,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.058823529411764705,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 1, ',', 2],[109.0, 0, ',', 2],[58.0, 0, ',', 1]

FS
###Fermi surface of the filled-skutterudite superconductor LaRu4P12: A clue to the origin of the metal-insulator transition in PrRu4P12|S. R. Saha,H. Sugawara,Y. Aoki,H. Sato,Y. Inada,H. Shishido,R. Settai,Y. Onuki,H. Harima###
(903798, 903799)
 Comparing the FS betweenLaRu4P12 and PrRu4P12, an essential role of c-f hybridization cooperating withthe FS nesting in driving the the M<missing VAR>-I transition in PrRu4P12 has beenclarified.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 1, ',', 2],[137.0, 0, ',', 2],[86.0, 0, ',', 1]

I
###Fermi surface of the filled-skutterudite superconductor LaRu4P12: A clue to the origin of the metal-insulator transition in PrRu4P12|S. R. Saha,H. Sugawara,Y. Aoki,H. Sato,Y. Inada,H. Shishido,R. Settai,Y. Onuki,H. Harima###
(903813, 903813)
 Comparing the FS betweenLaRu4P12 and PrRu4P12, an essential role of c-f hybridization cooperating withthe FS nesting in driving the the M<missing VAR>-I transition in PrRu4P12 has beenclarified.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 1, ',', 2],[152.0, 0, ',', 2],[101.0, 0, ',', 1]

PrRu4P12
###Fermi surface of the filled-skutterudite superconductor LaRu4P12: A clue to the origin of the metal-insulator transition in PrRu4P12|S. R. Saha,H. Sugawara,Y. Aoki,H. Sato,Y. Inada,H. Shishido,R. Settai,Y. Onuki,H. Harima###
(903819, 903823)
 Comparing the FS betweenLaRu4P12 and PrRu4P12, an essential role of c-f hybridization cooperating withthe FS nesting in driving the the M<missing VAR>-I transition in PrRu4P12 has beenclarified.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7058823529411765,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23529411764705882,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.058823529411764705,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 1, ',', 2],[158.0, 0, ',', 2],[107.0, 0, ',', 1]

PrOs4Sb12
###Transport properties of the heavy fermion superconductor PrOs$_{4}$Sb$_{12}$|H. Sugawara,M. Kobayashi,S. Osaki,S. R. Saha,T. Namiki,Y. Aoki,H. Sato###
(903855, 903859)
Transport properties of the heavy fermion superconductor PrOs4Sb12.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7058823529411765,0,0,0,0,0,0,0,0.058823529411764705,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23529411764705882,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PrOs4Sb12
###Transport properties of the heavy fermion superconductor PrOs$_{4}$Sb$_{12}$|H. Sugawara,M. Kobayashi,S. Osaki,S. R. Saha,T. Namiki,Y. Aoki,H. Sato###
(903904, 903908)
 We have measured the electrical resistivity, thermoelectric power, Hallcoefficient, and magnetoresistance (MR) on single crystals ofPrOs4Sb12, LaOs4Sb12 and NdOs4Sb12.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7058823529411765,0,0,0,0,0,0,0,0.058823529411764705,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23529411764705882,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaOs4Sb12
###Transport properties of the heavy fermion superconductor PrOs$_{4}$Sb$_{12}$|H. Sugawara,M. Kobayashi,S. Osaki,S. R. Saha,T. Namiki,Y. Aoki,H. Sato###
(903911, 903915)
 We have measured the electrical resistivity, thermoelectric power, Hallcoefficient, and magnetoresistance (MR) on single crystals ofPrOs4Sb12, LaOs4Sb12 and NdOs4Sb12.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7058823529411765,0,0,0,0,0,0.058823529411764705,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23529411764705882,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NdOs4Sb12
###Transport properties of the heavy fermion superconductor PrOs$_{4}$Sb$_{12}$|H. Sugawara,M. Kobayashi,S. Osaki,S. R. Saha,T. Namiki,Y. Aoki,H. Sato###
(903919, 903923)
 We have measured the electrical resistivity, thermoelectric power, Hallcoefficient, and magnetoresistance (MR) on single crystals ofPrOs4Sb12, LaOs4Sb12 and NdOs4Sb12.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7058823529411765,0,0,0,0,0,0,0,0,0.058823529411764705,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23529411764705882,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PrOs4Sb12
###Transport properties of the heavy fermion superconductor PrOs$_{4}$Sb$_{12}$|H. Sugawara,M. Kobayashi,S. Osaki,S. R. Saha,T. Namiki,Y. Aoki,H. Sato###
(903937, 903941)
 All thetransport properties in PrOs4Sb12 are similar to those inLaOs4Sb12 and NdOs4Sb12 at high temperatures, indicatingthe localized character of 4f<missing VAR>-electrons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7058823529411765,0,0,0,0,0,0,0,0.058823529411764705,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23529411764705882,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaOs4Sb12
###Transport properties of the heavy fermion superconductor PrOs$_{4}$Sb$_{12}$|H. Sugawara,M. Kobayashi,S. Osaki,S. R. Saha,T. Namiki,Y. Aoki,H. Sato###
(903954, 903958)
 All thetransport properties in PrOs4Sb12 are similar to those inLaOs4Sb12 and NdOs4Sb12 at high temperatures, indicatingthe localized character of 4f<missing VAR>-electrons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7058823529411765,0,0,0,0,0,0.058823529411764705,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23529411764705882,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NdOs4Sb12
###Transport properties of the heavy fermion superconductor PrOs$_{4}$Sb$_{12}$|H. Sugawara,M. Kobayashi,S. Osaki,S. R. Saha,T. Namiki,Y. Aoki,H. Sato###
(903962, 903966)
 All thetransport properties in PrOs4Sb12 are similar to those inLaOs4Sb12 and NdOs4Sb12 at high temperatures, indicatingthe localized character of 4f<missing VAR>-electrons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7058823529411765,0,0,0,0,0,0,0,0,0.058823529411764705,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23529411764705882,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaOs4Sb12
###Transport properties of the heavy fermion superconductor PrOs$_{4}$Sb$_{12}$|H. Sugawara,M. Kobayashi,S. Osaki,S. R. Saha,T. Namiki,Y. Aoki,H. Sato###
(904004, 904008)
 The transverse MR both inLaOs4Sb12 and PrOs4Sb12 tends to saturate for wide fielddirections, indicating these compounds to be uncompensated metals with no openorbit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7058823529411765,0,0,0,0,0,0.058823529411764705,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23529411764705882,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PrOs4Sb12
###Transport properties of the heavy fermion superconductor PrOs$_{4}$Sb$_{12}$|H. Sugawara,M. Kobayashi,S. Osaki,S. R. Saha,T. Namiki,Y. Aoki,H. Sato###
(904012, 904016)
 The transverse MR both inLaOs4Sb12 and PrOs4Sb12 tends to saturate for wide fielddirections, indicating these compounds to be uncompensated metals with no openorbit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7058823529411765,0,0,0,0,0,0,0,0.058823529411764705,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23529411764705882,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

UCu4Pd
###Transport properties of moderately disordered UCu$_4$Pd|A. Otop,S. Süllow,M. B. Maple,A. Weber,E. W. Scheidt,T. J. Gortenmulder,J. A. Mydosh###
(904157, 904160)
Transport properties of moderately disordered UCu4Pd.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

UCu4Pd
###Transport properties of moderately disordered UCu$_4$Pd|A. Otop,S. Süllow,M. B. Maple,A. Weber,E. W. Scheidt,T. J. Gortenmulder,J. A. Mydosh###
(904199, 904202)
 We present a detailed study on the (magneto)transport properties of as-castand heat treated material UCu4Pd.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Transport properties of moderately disordered UCu$_4$Pd|A. Otop,S. Süllow,M. B. Maple,A. Weber,E. W. Scheidt,T. J. Gortenmulder,J. A. Mydosh###
(904251, 904251)
 In our study of the Hall effect we determine a metalliccarrier density for all samples, and a temperature dependence of the Hallconstant which is inconsistent with the Skew scattering prediction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

AlGaAs/GaAs/AlGaAs
###Quantum corrections to the conductivity and Hall coefficient of a two-dimensional electron gas in a dirty AlGaAs/GaAs/AlGaAs quantum well: from the diffusive to the ballistic regime|V. T. Renard,I. V. Gornyi,O. A. Tkachenko,V. A. Tkachenko,Z. D. Kvon,E. B. Olshanetsky,A. I. Toropov,J. -C. Portal###
(904468, 904477)
Quantum corrections to the conductivity and Hall coefficient of a two-dimensional electron gas in a dirty AlGaAs/GaAs/AlGaAs quantum well from the diffusive to the ballistic regime.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[96.0, 110, 'K', 1]

AlGaAs/GaAs/AlGaAs
###Quantum corrections to the conductivity and Hall coefficient of a two-dimensional electron gas in a dirty AlGaAs/GaAs/AlGaAs quantum well: from the diffusive to the ballistic regime|V. T. Renard,I. V. Gornyi,O. A. Tkachenko,V. A. Tkachenko,Z. D. Kvon,E. B. Olshanetsky,A. I. Toropov,J. -C. Portal###
(904542, 904551)
 We report an experimental study of quantum conductivity corrections in a lowmobility, high density two-dimensional electron gas in a AlGaAs/GaAs/AlGaAsquantum well in a wide temperature range (1.5K - 110K).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[22.0, 110, 'K', 0]

K
###Quantum corrections to the conductivity and Hall coefficient of a two-dimensional electron gas in a dirty AlGaAs/GaAs/AlGaAs quantum well: from the diffusive to the ballistic regime|V. T. Renard,I. V. Gornyi,O. A. Tkachenko,V. A. Tkachenko,Z. D. Kvon,E. B. Olshanetsky,A. I. Toropov,J. -C. Portal###
(904570, 904570)
 We report an experimental study of quantum conductivity corrections in a lowmobility, high density two-dimensional electron gas in a AlGaAs/GaAs/AlGaAsquantum well in a wide temperature range (1.5K - 110K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 110, 'K', 0]

La0.7Sr0.3MnO3
###Anisotropic magnetoresistance and spin polarization of La0.7Sr0.3MnO3 / SrTiO3 superlattices|L. M. Wang###
(904781, 904787)
Anisotropic magnetoresistance and spin polarization of La0.7Sr0.3MnO3 / SrTiO3 superlattices.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Anisotropic magnetoresistance and spin polarization of La0.7Sr0.3MnO3 / SrTiO3 superlattices|L. M. Wang###
(904791, 904794)
Anisotropic magnetoresistance and spin polarization of La0.7Sr0.3MnO3 / SrTiO3 superlattices.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.7Sr0.3MnO3/SrTiO3
###Anisotropic magnetoresistance and spin polarization of La0.7Sr0.3MnO3 / SrTiO3 superlattices|L. M. Wang###
(904824, 904835)
 The crystalline structure, anisotropic magnetoresistance (AMR), andmagnetization of La0.7Sr0.3MnO3/SrTiO3 (LSMO/ST<missing VAR>O) superlattices grown by an rfsputtering system are systematically analyzed to study the spin polarization ofmanganite at interfaces.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

O/S
###Anisotropic magnetoresistance and spin polarization of La0.7Sr0.3MnO3 / SrTiO3 superlattices|L. M. Wang###
(904841, 904843)
 The crystalline structure, anisotropic magnetoresistance (AMR), andmagnetization of La0.7Sr0.3MnO3/SrTiO3 (LSMO/ST<missing VAR>O) superlattices grown by an rfsputtering system are systematically analyzed to study the spin polarization ofmanganite at interfaces.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

O
###Anisotropic magnetoresistance and spin polarization of La0.7Sr0.3MnO3 / SrTiO3 superlattices|L. M. Wang###
(904845, 904845)
 The crystalline structure, anisotropic magnetoresistance (AMR), andmagnetization of La0.7Sr0.3MnO3/SrTiO3 (LSMO/ST<missing VAR>O) superlattices grown by an rfsputtering system are systematically analyzed to study the spin polarization ofmanganite at interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Anisotropic magnetoresistance and spin polarization of La0.7Sr0.3MnO3 / SrTiO3 superlattices|L. M. Wang###
(904909, 904909)
 A perfectly epitaxial growth with sharp interfacesbetween LSMO and ST<missing VAR>O layers is confirmed by the transmission electronmicroscopy (TEM) image and the x<missing VAR>-ray diffraction.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Anisotropic magnetoresistance and spin polarization of La0.7Sr0.3MnO3 / SrTiO3 superlattices|L. M. Wang###
(904913, 904913)
 A perfectly epitaxial growth with sharp interfacesbetween LSMO and ST<missing VAR>O layers is confirmed by the transmission electronmicroscopy (TEM) image and the x<missing VAR>-ray diffraction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Anisotropic magnetoresistance and spin polarization of La0.7Sr0.3MnO3 / SrTiO3 superlattices|L. M. Wang###
(904915, 904915)
 A perfectly epitaxial growth with sharp interfacesbetween LSMO and ST<missing VAR>O layers is confirmed by the transmission electronmicroscopy (TEM) image and the x<missing VAR>-ray diffraction.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O/S
###Anisotropic magnetoresistance and spin polarization of La0.7Sr0.3MnO3 / SrTiO3 superlattices|L. M. Wang###
(904975, 904977)
 The presence of positivelow-temperature AMR in LSMO/ST<missing VAR>O superlattices with thinner LSMO layers orthicker ST<missing VAR>O layers implies that two bands of majority and minority charactercontribute to the transport properties, leading to a reduced spin polarization.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

O
###Anisotropic magnetoresistance and spin polarization of La0.7Sr0.3MnO3 / SrTiO3 superlattices|L. M. Wang###
(904979, 904979)
 The presence of positivelow-temperature AMR in LSMO/ST<missing VAR>O superlattices with thinner LSMO layers orthicker ST<missing VAR>O layers implies that two bands of majority and minority charactercontribute to the transport properties, leading to a reduced spin polarization.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Anisotropic magnetoresistance and spin polarization of La0.7Sr0.3MnO3 / SrTiO3 superlattices|L. M. Wang###
(904990, 904990)
 The presence of positivelow-temperature AMR in LSMO/ST<missing VAR>O superlattices with thinner LSMO layers orthicker ST<missing VAR>O layers implies that two bands of majority and minority charactercontribute to the transport properties, leading to a reduced spin polarization.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Anisotropic magnetoresistance and spin polarization of La0.7Sr0.3MnO3 / SrTiO3 superlattices|L. M. Wang###
(904999, 904999)
 The presence of positivelow-temperature AMR in LSMO/ST<missing VAR>O superlattices with thinner LSMO layers orthicker ST<missing VAR>O layers implies that two bands of majority and minority charactercontribute to the transport properties, leading to a reduced spin polarization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Anisotropic magnetoresistance and spin polarization of La0.7Sr0.3MnO3 / SrTiO3 superlattices|L. M. Wang###
(905001, 905001)
 The presence of positivelow-temperature AMR in LSMO/ST<missing VAR>O superlattices with thinner LSMO layers orthicker ST<missing VAR>O layers implies that two bands of majority and minority charactercontribute to the transport properties, leading to a reduced spin polarization.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Anisotropic magnetoresistance and spin polarization of La0.7Sr0.3MnO3 / SrTiO3 superlattices|L. M. Wang###
(905097, 905097)
Furthermore, the magnetization of superlattices follows the T<missing VAR>3/2 law at lowtemperatures and decays more quickly as the thickness ratio dSTO/dLSM<missing VAR>Oincreases, corresponding to a reduced exchange coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Anisotropic magnetoresistance and spin polarization of La0.7Sr0.3MnO3 / SrTiO3 superlattices|L. M. Wang###
(905101, 905101)
Furthermore, the magnetization of superlattices follows the T<missing VAR>3/2 law at lowtemperatures and decays more quickly as the thickness ratio dSTO/dLSM<missing VAR>Oincreases, corresponding to a reduced exchange coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Anisotropic magnetoresistance and spin polarization of La0.7Sr0.3MnO3 / SrTiO3 superlattices|L. M. Wang###
(905103, 905103)
Furthermore, the magnetization of superlattices follows the T<missing VAR>3/2 law at lowtemperatures and decays more quickly as the thickness ratio dSTO/dLSM<missing VAR>Oincreases, corresponding to a reduced exchange coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.7Ca0.3MnO3/BaTiO3
###Magnetocapacitance effect in perovskite-superlattice based multiferroics|M. P. Singh,W. Prellier,Ch. Simon,B. Raveau###
(905207, 905218)
 We report the structural and magnetoelectrical properties ofLa0.7Ca0.3MnO3/BaTiO3 perovskite superlattices grown on(001)-oriented SrTiO3 by the pulsed laser deposition technique.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[138.0, 30, '%', 2],[142.0, 100, 'K', 2],[241.0, 3, '%', 4],[249.0, 1, 'kHz', 4],[252.0, 100, 'K', 4]

SrTiO3
###Magnetocapacitance effect in perovskite-superlattice based multiferroics|M. P. Singh,W. Prellier,Ch. Simon,B. Raveau###
(905235, 905238)
 We report the structural and magnetoelectrical properties ofLa0.7Ca0.3MnO3/BaTiO3 perovskite superlattices grown on(001)-oriented SrTiO3 by the pulsed laser deposition technique.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 30, '%', 2],[122.0, 100, 'K', 2],[221.0, 3, '%', 4],[229.0, 1, 'kHz', 4],[232.0, 100, 'K', 4]

C
###Magnetocapacitance effect in perovskite-superlattice based multiferroics|M. P. Singh,W. Prellier,Ch. Simon,B. Raveau###
(905291, 905291)
 Magnetichysteresis loops together with temperature dependent magnetic propertiesexhibit well-defined coercivity and magnetic transition temperature (T<missing VAR>C)symbol126140 K.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 30, '%', 1],[69.0, 100, 'K', 1],[168.0, 3, '%', 3],[176.0, 1, 'kHz', 3],[179.0, 100, 'K', 3]

K
###Magnetocapacitance effect in perovskite-superlattice based multiferroics|M. P. Singh,W. Prellier,Ch. Simon,B. Raveau###
(905299, 905299)
 Magnetichysteresis loops together with temperature dependent magnetic propertiesexhibit well-defined coercivity and magnetic transition temperature (T<missing VAR>C)symbol126140 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 30, '%', 1],[61.0, 100, 'K', 1],[160.0, 3, '%', 3],[168.0, 1, 'kHz', 3],[171.0, 100, 'K', 3]

C
###Magnetocapacitance effect in perovskite-superlattice based multiferroics|M. P. Singh,W. Prellier,Ch. Simon,B. Raveau###
(905303, 905303)
 D<missing VAR>C electrical studies of films show that themagnetoresistance (MR) is dependent on the BaTiO3 thickness and negativeMR as high as 30% at 100K are observed.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 30, '%', 0],[57.0, 100, 'K', 0],[156.0, 3, '%', 2],[164.0, 1, 'kHz', 2],[167.0, 100, 'K', 2]

BaTiO3
###Magnetocapacitance effect in perovskite-superlattice based multiferroics|M. P. Singh,W. Prellier,Ch. Simon,B. Raveau###
(905335, 905338)
 D<missing VAR>C electrical studies of films show that themagnetoresistance (MR) is dependent on the BaTiO3 thickness and negativeMR as high as 30% at 100K are observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 30, '%', 0],[22.0, 100, 'K', 0],[121.0, 3, '%', 2],[129.0, 1, 'kHz', 2],[132.0, 100, 'K', 2]

C
###Magnetocapacitance effect in perovskite-superlattice based multiferroics|M. P. Singh,W. Prellier,Ch. Simon,B. Raveau###
(905370, 905370)
 The AC electrical studies revealthat the impedance and capacitance in these films vary with the appliedmagnetic field due to the magnetoelectrical coupling in these structures - akey feature of multiferroics.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 30, '%', 1],[10.0, 100, 'K', 1],[89.0, 3, '%', 1],[97.0, 1, 'kHz', 1],[100.0, 100, 'K', 1]

O
###The O-M-O triatomic molecule: Basic unit of cuprates & manganates|S. Tsintsarska,M. D. Ivanovich,M. Georgiev,Alexander D. Gochev###
(905505, 905505)
The O-M<missing VAR>-O triatomic molecule Basic unit of cuprates  manganates.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###The O-M-O triatomic molecule: Basic unit of cuprates & manganates|S. Tsintsarska,M. D. Ivanovich,M. Georgiev,Alexander D. Gochev###
(905509, 905509)
The O-M<missing VAR>-O triatomic molecule Basic unit of cuprates  manganates.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###The O-M-O triatomic molecule: Basic unit of cuprates & manganates|S. Tsintsarska,M. D. Ivanovich,M. Georgiev,Alexander D. Gochev###
(905529, 905529)
 The O(oxygen)-M<missing VAR>(metal)-O(oxygen) molecule is a basic unit of high-temperaturesuperconducting cuprates and colossal magnetoresistance exhibiting manganates.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###The O-M-O triatomic molecule: Basic unit of cuprates & manganates|S. Tsintsarska,M. D. Ivanovich,M. Georgiev,Alexander D. Gochev###
(905539, 905539)
 The O(oxygen)-M<missing VAR>(metal)-O(oxygen) molecule is a basic unit of high-temperaturesuperconducting cuprates and colossal magnetoresistance exhibiting manganates.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###The O-M-O triatomic molecule: Basic unit of cuprates & manganates|S. Tsintsarska,M. D. Ivanovich,M. Georgiev,Alexander D. Gochev###
(905709, 905709)
 We now calculate the electron hoppingenergies along Cu(P0-O(A) bonds, sites for nonlocal electron-vibrational modecoupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P0
###The O-M-O triatomic molecule: Basic unit of cuprates & manganates|S. Tsintsarska,M. D. Ivanovich,M. Georgiev,Alexander D. Gochev###
(905711, 905712)
 We now calculate the electron hoppingenergies along Cu(P0-O(A) bonds, sites for nonlocal electron-vibrational modecoupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###The O-M-O triatomic molecule: Basic unit of cuprates & manganates|S. Tsintsarska,M. D. Ivanovich,M. Georgiev,Alexander D. Gochev###
(905714, 905714)
 We now calculate the electron hoppingenergies along Cu(P0-O(A) bonds, sites for nonlocal electron-vibrational modecoupling.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###The O-M-O triatomic molecule: Basic unit of cuprates & manganates|S. Tsintsarska,M. D. Ivanovich,M. Georgiev,Alexander D. Gochev###
(905752, 905752)
 We find the electric transport along the O(A)-Cu(P)-O(A) moleculedominated by scattering from bond polarons which is reflected in the two-branchcharacter of the temperature dependence of its electric resistance.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu(P)
###The O-M-O triatomic molecule: Basic unit of cuprates & manganates|S. Tsintsarska,M. D. Ivanovich,M. Georgiev,Alexander D. Gochev###
(905757, 905760)
 We find the electric transport along the O(A)-Cu(P)-O(A) moleculedominated by scattering from bond polarons which is reflected in the two-branchcharacter of the temperature dependence of its electric resistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###The O-M-O triatomic molecule: Basic unit of cuprates & manganates|S. Tsintsarska,M. D. Ivanovich,M. Georgiev,Alexander D. Gochev###
(905762, 905762)
 We find the electric transport along the O(A)-Cu(P)-O(A) moleculedominated by scattering from bond polarons which is reflected in the two-branchcharacter of the temperature dependence of its electric resistance.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Itinerant vibronic polarons: A Merrifield approach I. Low energy range calculations|S. G. Tsintsarska,M. D. Ivanovich,A. Andreev,D. W. Brown,K. Lindenberg,M. Georgiev###
(905836, 905836)
Itinerant vibronic polarons A Merrifield approach I.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###Itinerant vibronic polarons: A Merrifield approach I. Low energy range calculations|S. G. Tsintsarska,M. D. Ivanovich,A. Andreev,D. W. Brown,K. Lindenberg,M. Georgiev###
(906097, 906097)
 Our variational methodgenerates either Jahn-Teller polarons if the electronic bands degenerate orPseudo-Jahn-Teller polarons if they nearly degenerate, both entities regardedas likely carriers in metal-oxide manifolds of high-Tc superconducting cupratesand colossal magnetoresistance exhibiting manganates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Magnetoresistance and spin polarization in the insulating regime of a Si two-dimensional electron system|Mitsuaki Ooya,Kiyohiko Toyama,Tohru Okamoto###
(906143, 906143)
Magnetoresistance and spin polarization in the insulating regime of a Si two-dimensional electron system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 4, ',', 3]

Si
###Magnetoresistance and spin polarization in the insulating regime of a Si two-dimensional electron system|Mitsuaki Ooya,Kiyohiko Toyama,Tohru Okamoto###
(906172, 906172)
 We have studied the magnetoresistance in a high-mobility Si inversion layerdown to low electron concentrations at which the longitudinal resistivityrhoxx has an activated temperature dependence.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 4, ',', 2]

B
###Magnetoresistance and spin polarization in the insulating regime of a Si two-dimensional electron system|Mitsuaki Ooya,Kiyohiko Toyama,Tohru Okamoto###
(906256, 906256)
 The angle of the magneticfield was controlled so as to study the orbital effect proportional to theperpendicular component Bperp for various total strengths Brm tot.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 4, ',', 1]

B
###Magnetoresistance and spin polarization in the insulating regime of a Si two-dimensional electron system|Mitsuaki Ooya,Kiyohiko Toyama,Tohru Okamoto###
(906267, 906267)
 The angle of the magneticfield was controlled so as to study the orbital effect proportional to theperpendicular component Bperp for various total strengths Brm tot.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 4, ',', 1]

K
###Magnetoresistance and spin polarization in the insulating regime of a Si two-dimensional electron system|Mitsuaki Ooya,Kiyohiko Toyama,Tohru Okamoto###
(906339, 906339)
 Adip in rhoxx, which corresponds to the Landau level filling factor ofnu4, survives even for high resistivity of rhoxx sim 108 Omega atT<missing VAR> 150 rm m<missing VAR>K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 4, ',', 0]

B
###Magnetoresistance and spin polarization in the insulating regime of a Si two-dimensional electron system|Mitsuaki Ooya,Kiyohiko Toyama,Tohru Okamoto###
(906346, 906346)
 The linear Brm tot-dependence of the value ofBperp at the dip for low Brm tot indicates that a ferromagneticinstability does not occur even in the far insulating regime.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 4, ',', 1]

B
###Magnetoresistance and spin polarization in the insulating regime of a Si two-dimensional electron system|Mitsuaki Ooya,Kiyohiko Toyama,Tohru Okamoto###
(906362, 906362)
 The linear Brm tot-dependence of the value ofBperp at the dip for low Brm tot indicates that a ferromagneticinstability does not occur even in the far insulating regime.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 4, ',', 1]

B
###Magnetoresistance and spin polarization in the insulating regime of a Si two-dimensional electron system|Mitsuaki Ooya,Kiyohiko Toyama,Tohru Okamoto###
(906375, 906375)
 The linear Brm tot-dependence of the value ofBperp at the dip for low Brm tot indicates that a ferromagneticinstability does not occur even in the far insulating regime.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 4, ',', 1]

Ca2-xSr
###Severe Fermi Surface Reconstruction at a Metamagnetic-Transition in Ca$_{2-x}$Sr$_x$RuO$_4$ (for $0.2 \leq x \leq 0.5$)|L. Balicas,S. Nakatsuji,D. Hall,H. Lee,Z. Fisk,Y. Maeno,D. J. Singh###
(906436, 906440)
Severe Fermi Surface Reconstruction at a Metamagnetic-Transition in Ca2-xSrx<missing VAR>RuO4 (for 0.2 leq x<missing VAR> leq 0.5).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[67.0, 0.2, ',', 2]

RuO4
###Severe Fermi Surface Reconstruction at a Metamagnetic-Transition in Ca$_{2-x}$Sr$_x$RuO$_4$ (for $0.2 \leq x \leq 0.5$)|L. Balicas,S. Nakatsuji,D. Hall,H. Lee,Z. Fisk,Y. Maeno,D. J. Singh###
(906442, 906444)
Severe Fermi Surface Reconstruction at a Metamagnetic-Transition in Ca2-xSrx<missing VAR>RuO4 (for 0.2 leq x<missing VAR> leq 0.5).
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 0.2, ',', 2]

Ca2-xSr
###Severe Fermi Surface Reconstruction at a Metamagnetic-Transition in Ca$_{2-x}$Sr$_x$RuO$_4$ (for $0.2 \leq x \leq 0.5$)|L. Balicas,S. Nakatsuji,D. Hall,H. Lee,Z. Fisk,Y. Maeno,D. J. Singh###
(906475, 906479)
 We report an electrical transport study in Ca2-xSrx<missing VAR>RuO4 singlecrystals at high magnetic fields (B).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[28.0, 0.2, ',', 1]

RuO4
###Severe Fermi Surface Reconstruction at a Metamagnetic-Transition in Ca$_{2-x}$Sr$_x$RuO$_4$ (for $0.2 \leq x \leq 0.5$)|L. Balicas,S. Nakatsuji,D. Hall,H. Lee,Z. Fisk,Y. Maeno,D. J. Singh###
(906481, 906483)
 We report an electrical transport study in Ca2-xSrx<missing VAR>RuO4 singlecrystals at high magnetic fields (B).
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 0.2, ',', 1]

(B)
###Severe Fermi Surface Reconstruction at a Metamagnetic-Transition in Ca$_{2-x}$Sr$_x$RuO$_4$ (for $0.2 \leq x \leq 0.5$)|L. Balicas,S. Nakatsuji,D. Hall,H. Lee,Z. Fisk,Y. Maeno,D. J. Singh###
(906498, 906500)
 We report an electrical transport study in Ca2-xSrx<missing VAR>RuO4 singlecrystals at high magnetic fields (B).
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 0.2, ',', 1]

Sr2RuO4
###Severe Fermi Surface Reconstruction at a Metamagnetic-Transition in Ca$_{2-x}$Sr$_x$RuO$_4$ (for $0.2 \leq x \leq 0.5$)|L. Balicas,S. Nakatsuji,D. Hall,H. Lee,Z. Fisk,Y. Maeno,D. J. Singh###
(906548, 906552)
 For x<missing VAR> 0.2, the Hall constantR<missing VAR>xy decreases sharply at an anisotropic metamagnetic (MM) transitionreaching its value for Sr2RuO4 at high fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 0.2, ',', 0]

O
###Severe Fermi Surface Reconstruction at a Metamagnetic-Transition in Ca$_{2-x}$Sr$_x$RuO$_4$ (for $0.2 \leq x \leq 0.5$)|L. Balicas,S. Nakatsuji,D. Hall,H. Lee,Z. Fisk,Y. Maeno,D. J. Singh###
(906614, 906614)
 A sharp decrease in theA coefficient of the resistivity T<missing VAR>2-term and a change in the structure ofthe angular magnetoresistance oscillations (AMRO) for B rotating in theplanes, confirms the reconstruction of the Fermi surface (FS).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 0.2, ',', 1]

B
###Severe Fermi Surface Reconstruction at a Metamagnetic-Transition in Ca$_{2-x}$Sr$_x$RuO$_4$ (for $0.2 \leq x \leq 0.5$)|L. Balicas,S. Nakatsuji,D. Hall,H. Lee,Z. Fisk,Y. Maeno,D. J. Singh###
(906619, 906619)
 A sharp decrease in theA coefficient of the resistivity T<missing VAR>2-term and a change in the structure ofthe angular magnetoresistance oscillations (AMRO) for B rotating in theplanes, confirms the reconstruction of the Fermi surface (FS).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 0.2, ',', 1]

(FS)
###Severe Fermi Surface Reconstruction at a Metamagnetic-Transition in Ca$_{2-x}$Sr$_x$RuO$_4$ (for $0.2 \leq x \leq 0.5$)|L. Balicas,S. Nakatsuji,D. Hall,H. Lee,Z. Fisk,Y. Maeno,D. J. Singh###
(906645, 906648)
 A sharp decrease in theA coefficient of the resistivity T<missing VAR>2-term and a change in the structure ofthe angular magnetoresistance oscillations (AMRO) for B rotating in theplanes, confirms the reconstruction of the Fermi surface (FS).
Featurization successful!
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 0.2, ',', 1]

FS
###Severe Fermi Surface Reconstruction at a Metamagnetic-Transition in Ca$_{2-x}$Sr$_x$RuO$_4$ (for $0.2 \leq x \leq 0.5$)|L. Balicas,S. Nakatsuji,D. Hall,H. Lee,Z. Fisk,Y. Maeno,D. J. Singh###
(906676, 906677)
 Our observationsand LDA calculations indicate a strong dependence of the FS on the Caconcentration and suggest the coexistence of itinerant and localized electronicstates in single layered ruthenates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 0.2, ',', 2]

Ca
###Severe Fermi Surface Reconstruction at a Metamagnetic-Transition in Ca$_{2-x}$Sr$_x$RuO$_4$ (for $0.2 \leq x \leq 0.5$)|L. Balicas,S. Nakatsuji,D. Hall,H. Lee,Z. Fisk,Y. Maeno,D. J. Singh###
(906683, 906683)
 Our observationsand LDA calculations indicate a strong dependence of the FS on the Caconcentration and suggest the coexistence of itinerant and localized electronicstates in single layered ruthenates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[176.0, 0.2, ',', 2]

B
###Observation of oscillatory magnetoresistance periodic in 1/B and B in Ca3Ru2O7|V. Durairaj,X. N. Lin,Z. X. Zhou,S. Chikara,E. Ehami,A. Douglass,P. Schlottmann,G. Cao###
(906740, 906740)
Observation of oscillatory magnetoresistance periodic in 1/B and B in Ca3Ru2O7.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 804, ';', 2],[225.0, 15, 'K', 4]

B
###Observation of oscillatory magnetoresistance periodic in 1/B and B in Ca3Ru2O7|V. Durairaj,X. N. Lin,Z. X. Zhou,S. Chikara,E. Ehami,A. Douglass,P. Schlottmann,G. Cao###
(906744, 906744)
Observation of oscillatory magnetoresistance periodic in 1/B and B in Ca3Ru2O7.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 804, ';', 2],[221.0, 15, 'K', 4]

Ca3Ru2O7
###Observation of oscillatory magnetoresistance periodic in 1/B and B in Ca3Ru2O7|V. Durairaj,X. N. Lin,Z. X. Zhou,S. Chikara,E. Ehami,A. Douglass,P. Schlottmann,G. Cao###
(906748, 906753)
Observation of oscillatory magnetoresistance periodic in 1/B and B in Ca3Ru2O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 804, ';', 2],[212.0, 15, 'K', 4]

B
###Observation of oscillatory magnetoresistance periodic in 1/B and B in Ca3Ru2O7|V. Durairaj,X. N. Lin,Z. X. Zhou,S. Chikara,E. Ehami,A. Douglass,P. Schlottmann,G. Cao###
(906773, 906773)
 We report magnetoresistance oscillations in high magnetic fields, B, up to 45T<missing VAR> and over a wide range of temperature in the Mott-like system Ca3Ru2O7.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 804, ';', 1],[192.0, 15, 'K', 3]

Ca3Ru2O7
###Observation of oscillatory magnetoresistance periodic in 1/B and B in Ca3Ru2O7|V. Durairaj,X. N. Lin,Z. X. Zhou,S. Chikara,E. Ehami,A. Douglass,P. Schlottmann,G. Cao###
(906809, 906814)
 We report magnetoresistance oscillations in high magnetic fields, B, up to 45T<missing VAR> and over a wide range of temperature in the Mott-like system Ca3Ru2O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 804, ';', 1],[151.0, 15, 'K', 3]

B
###Observation of oscillatory magnetoresistance periodic in 1/B and B in Ca3Ru2O7|V. Durairaj,X. N. Lin,Z. X. Zhou,S. Chikara,E. Ehami,A. Douglass,P. Schlottmann,G. Cao###
(906819, 906819)
 For Brotating within the ac-plane, slow and strong Shubnikov-de Haas (SdH)oscillations periodic in 1/B are observed for T<missing VAR>804;1.5 K in the presence ofmetamagnetism.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 804, ';', 0],[146.0, 15, 'K', 2]

H
###Observation of oscillatory magnetoresistance periodic in 1/B and B in Ca3Ru2O7|V. Durairaj,X. N. Lin,Z. X. Zhou,S. Chikara,E. Ehami,A. Douglass,P. Schlottmann,G. Cao###
(906847, 906847)
 For Brotating within the ac-plane, slow and strong Shubnikov-de Haas (SdH)oscillations periodic in 1/B are observed for T<missing VAR>804;1.5 K in the presence ofmetamagnetism.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 804, ';', 0],[118.0, 15, 'K', 2]

B
###Observation of oscillatory magnetoresistance periodic in 1/B and B in Ca3Ru2O7|V. Durairaj,X. N. Lin,Z. X. Zhou,S. Chikara,E. Ehami,A. Douglass,P. Schlottmann,G. Cao###
(906859, 906859)
 For Brotating within the ac-plane, slow and strong Shubnikov-de Haas (SdH)oscillations periodic in 1/B are observed for T<missing VAR>804;1.5 K in the presence ofmetamagnetism.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 804, ';', 0],[106.0, 15, 'K', 2]

K
###Observation of oscillatory magnetoresistance periodic in 1/B and B in Ca3Ru2O7|V. Durairaj,X. N. Lin,Z. X. Zhou,S. Chikara,E. Ehami,A. Douglass,P. Schlottmann,G. Cao###
(906872, 906872)
 For Brotating within the ac-plane, slow and strong Shubnikov-de Haas (SdH)oscillations periodic in 1/B are observed for T<missing VAR>804;1.5 K in the presence ofmetamagnetism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 804, ';', 0],[93.0, 15, 'K', 2]

B
###Observation of oscillatory magnetoresistance periodic in 1/B and B in Ca3Ru2O7|V. Durairaj,X. N. Lin,Z. X. Zhou,S. Chikara,E. Ehami,A. Douglass,P. Schlottmann,G. Cao###
(906924, 906924)
 For B[110],oscillations are also observed but periodic in B (rather than 1/B) whichpersist up to 15 K.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 804, ';', 2],[41.0, 15, 'K', 0]

B
###Observation of oscillatory magnetoresistance periodic in 1/B and B in Ca3Ru2O7|V. Durairaj,X. N. Lin,Z. X. Zhou,S. Chikara,E. Ehami,A. Douglass,P. Schlottmann,G. Cao###
(906945, 906945)
 For B[110],oscillations are also observed but periodic in B (rather than 1/B) whichpersist up to 15 K.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 804, ';', 2],[20.0, 15, 'K', 0]

B
###Observation of oscillatory magnetoresistance periodic in 1/B and B in Ca3Ru2O7|V. Durairaj,X. N. Lin,Z. X. Zhou,S. Chikara,E. Ehami,A. Douglass,P. Schlottmann,G. Cao###
(906954, 906954)
 For B[110],oscillations are also observed but periodic in B (rather than 1/B) whichpersist up to 15 K.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 804, ';', 2],[11.0, 15, 'K', 0]

H
###Observation of oscillatory magnetoresistance periodic in 1/B and B in Ca3Ru2O7|V. Durairaj,X. N. Lin,Z. X. Zhou,S. Chikara,E. Ehami,A. Douglass,P. Schlottmann,G. Cao###
(906973, 906973)
 While the SdH oscillations are a manifestation of thepresence of small Fermi surface (FS) pockets in the Mott-like system, theB-periodic oscillations, an exotic quantum phenomenon, may be a result ofanomalous coupling of the magnetic field to the t2g-orbitals that makes theextremal cross-section of the FS field-dependent.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 804, ';', 3],[8.0, 15, 'K', 1]

(FS)
###Observation of oscillatory magnetoresistance periodic in 1/B and B in Ca3Ru2O7|V. Durairaj,X. N. Lin,Z. X. Zhou,S. Chikara,E. Ehami,A. Douglass,P. Schlottmann,G. Cao###
(906998, 907001)
 While the SdH oscillations are a manifestation of thepresence of small Fermi surface (FS) pockets in the Mott-like system, theB-periodic oscillations, an exotic quantum phenomenon, may be a result ofanomalous coupling of the magnetic field to the t2g-orbitals that makes theextremal cross-section of the FS field-dependent.
Featurization successful!
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 804, ';', 3],[33.0, 15, 'K', 1]

B
###Observation of oscillatory magnetoresistance periodic in 1/B and B in Ca3Ru2O7|V. Durairaj,X. N. Lin,Z. X. Zhou,S. Chikara,E. Ehami,A. Douglass,P. Schlottmann,G. Cao###
(907019, 907019)
 While the SdH oscillations are a manifestation of thepresence of small Fermi surface (FS) pockets in the Mott-like system, theB-periodic oscillations, an exotic quantum phenomenon, may be a result ofanomalous coupling of the magnetic field to the t2g-orbitals that makes theextremal cross-section of the FS field-dependent.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 804, ';', 3],[54.0, 15, 'K', 1]

FS
###Observation of oscillatory magnetoresistance periodic in 1/B and B in Ca3Ru2O7|V. Durairaj,X. N. Lin,Z. X. Zhou,S. Chikara,E. Ehami,A. Douglass,P. Schlottmann,G. Cao###
(907085, 907086)
 While the SdH oscillations are a manifestation of thepresence of small Fermi surface (FS) pockets in the Mott-like system, theB-periodic oscillations, an exotic quantum phenomenon, may be a result ofanomalous coupling of the magnetic field to the t2g-orbitals that makes theextremal cross-section of the FS field-dependent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[217.0, 804, ';', 3],[120.0, 15, 'K', 1]

Cu/Co/Cu/Co/Cu
###Spin-transfer-induced excitations in bilayer magnetic nanopillars at high fields: The effects of contact layers|Wenyu Chen,Andrew D. Kent,M. J. Rooks,N. Ruiz,Jonathan Z. Sun###
(907189, 907197)
 Junctions investigated all have Cu/Co/Cu/Co/Cu as core layerstacks.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[179.0, 71, ',', 6]

Pt
###Spin-transfer-induced excitations in bilayer magnetic nanopillars at high fields: The effects of contact layers|Wenyu Chen,Andrew D. Kent,M. J. Rooks,N. Ruiz,Jonathan Z. Sun###
(907239, 907239)
 Two types of such junctions are compared, one with the core stacksandwiched between Pt layers (type A), the other with Pt only on one side ofthe stack (type B).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 71, ',', 5]

Pt
###Spin-transfer-induced excitations in bilayer magnetic nanopillars at high fields: The effects of contact layers|Wenyu Chen,Andrew D. Kent,M. J. Rooks,N. Ruiz,Jonathan Z. Sun###
(907256, 907256)
 Two types of such junctions are compared, one with the core stacksandwiched between Pt layers (type A), the other with Pt only on one side ofthe stack (type B).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 71, ',', 5]

B
###Spin-transfer-induced excitations in bilayer magnetic nanopillars at high fields: The effects of contact layers|Wenyu Chen,Andrew D. Kent,M. J. Rooks,N. Ruiz,Jonathan Z. Sun###
(907276, 907276)
 Two types of such junctions are compared, one with the core stacksandwiched between Pt layers (type A), the other with Pt only on one side ofthe stack (type B).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 71, ',', 5]

B
###Spin-transfer-induced excitations in bilayer magnetic nanopillars at high fields: The effects of contact layers|Wenyu Chen,Andrew D. Kent,M. J. Rooks,N. Ruiz,Jonathan Z. Sun###
(907373, 907373)
 B71, 140403(R) (2005)], is present in B samples only.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 71, ',', 0]

B
###Spin-transfer-induced excitations in bilayer magnetic nanopillars at high fields: The effects of contact layers|Wenyu Chen,Andrew D. Kent,M. J. Rooks,N. Ruiz,Jonathan Z. Sun###
(907396, 907396)
 B71, 140403(R) (2005)], is present in B samples only.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 71, ',', 0]

(FF)
###First- and Second-Order Phase Transitions, Fulde-Ferrel Inhomogeneous State and Quantum Criticality in Ferromagnet/Superconductor Double Tunnel Junctions|Biao Jin,Gang Su,Qing-Rong Zheng###
(907524, 907527)
 First- and second-order phase transitions, Fulde-Ferrel (FF) inhomogeneoussuperconducting (SC) state and quantum criticality inferromagnet/superconductor/ferromagnet double tunnel junctions areinvestigated.
Featurization successful!
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[322.0, 2, ',', 4],[324.0, 1, 'and', 4],[326.0, 2, ',', 4]

(SC)
###First- and Second-Order Phase Transitions, Fulde-Ferrel Inhomogeneous State and Quantum Criticality in Ferromagnet/Superconductor Double Tunnel Junctions|Biao Jin,Gang Su,Qing-Rong Zheng###
(907534, 907537)
 First- and second-order phase transitions, Fulde-Ferrel (FF) inhomogeneoussuperconducting (SC) state and quantum criticality inferromagnet/superconductor/ferromagnet double tunnel junctions areinvestigated.
Featurization successful!
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[312.0, 2, ',', 4],[314.0, 1, 'and', 4],[316.0, 2, ',', 4]

BCS
###First- and Second-Order Phase Transitions, Fulde-Ferrel Inhomogeneous State and Quantum Criticality in Ferromagnet/Superconductor Double Tunnel Junctions|Biao Jin,Gang Su,Qing-Rong Zheng###
(907606, 907608)
 For the antiparallel alignment of magnetizations, it is shownthat a first-order phase transition from the homogeneous BCS state to theinhomogeneous FF state occurs at a certain bias voltage Vast; while thetransitions from the BCS state and the FF state to the normal state at %Vc<missing VAR> are of the second-order.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[241.0, 2, ',', 3],[243.0, 1, 'and', 3],[245.0, 2, ',', 3]

FF
###First- and Second-Order Phase Transitions, Fulde-Ferrel Inhomogeneous State and Quantum Criticality in Ferromagnet/Superconductor Double Tunnel Junctions|Biao Jin,Gang Su,Qing-Rong Zheng###
(907619, 907620)
 For the antiparallel alignment of magnetizations, it is shownthat a first-order phase transition from the homogeneous BCS state to theinhomogeneous FF state occurs at a certain bias voltage Vast; while thetransitions from the BCS state and the FF state to the normal state at %Vc<missing VAR> are of the second-order.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[229.0, 2, ',', 3],[231.0, 1, 'and', 3],[233.0, 2, ',', 3]

V
###First- and Second-Order Phase Transitions, Fulde-Ferrel Inhomogeneous State and Quantum Criticality in Ferromagnet/Superconductor Double Tunnel Junctions|Biao Jin,Gang Su,Qing-Rong Zheng###
(907636, 907636)
 For the antiparallel alignment of magnetizations, it is shownthat a first-order phase transition from the homogeneous BCS state to theinhomogeneous FF state occurs at a certain bias voltage Vast; while thetransitions from the BCS state and the FF state to the normal state at %Vc<missing VAR> are of the second-order.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[213.0, 2, ',', 3],[215.0, 1, 'and', 3],[217.0, 2, ',', 3]

BCS
###First- and Second-Order Phase Transitions, Fulde-Ferrel Inhomogeneous State and Quantum Criticality in Ferromagnet/Superconductor Double Tunnel Junctions|Biao Jin,Gang Su,Qing-Rong Zheng###
(907651, 907653)
 For the antiparallel alignment of magnetizations, it is shownthat a first-order phase transition from the homogeneous BCS state to theinhomogeneous FF state occurs at a certain bias voltage Vast; while thetransitions from the BCS state and the FF state to the normal state at %Vc<missing VAR> are of the second-order.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[196.0, 2, ',', 3],[198.0, 1, 'and', 3],[200.0, 2, ',', 3]

FF
###First- and Second-Order Phase Transitions, Fulde-Ferrel Inhomogeneous State and Quantum Criticality in Ferromagnet/Superconductor Double Tunnel Junctions|Biao Jin,Gang Su,Qing-Rong Zheng###
(907661, 907662)
 For the antiparallel alignment of magnetizations, it is shownthat a first-order phase transition from the homogeneous BCS state to theinhomogeneous FF state occurs at a certain bias voltage Vast; while thetransitions from the BCS state and the FF state to the normal state at %Vc<missing VAR> are of the second-order.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[187.0, 2, ',', 3],[189.0, 1, 'and', 3],[191.0, 2, ',', 3]

V
###First- and Second-Order Phase Transitions, Fulde-Ferrel Inhomogeneous State and Quantum Criticality in Ferromagnet/Superconductor Double Tunnel Junctions|Biao Jin,Gang Su,Qing-Rong Zheng###
(907679, 907679)
 For the antiparallel alignment of magnetizations, it is shownthat a first-order phase transition from the homogeneous BCS state to theinhomogeneous FF state occurs at a certain bias voltage Vast; while thetransitions from the BCS state and the FF state to the normal state at %Vc<missing VAR> are of the second-order.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[170.0, 2, ',', 3],[172.0, 1, 'and', 3],[174.0, 2, ',', 3]

In
###First- and Second-Order Phase Transitions, Fulde-Ferrel Inhomogeneous State and Quantum Criticality in Ferromagnet/Superconductor Double Tunnel Junctions|Biao Jin,Gang Su,Qing-Rong Zheng###
(907713, 907713)
 In addition, a quantum critical point (Q<missing VAR>CP), % VQ<missing VAR>CP, isidentified.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 2, ',', 1],[138.0, 1, 'and', 1],[140.0, 2, ',', 1]

P
###First- and Second-Order Phase Transitions, Fulde-Ferrel Inhomogeneous State and Quantum Criticality in Ferromagnet/Superconductor Double Tunnel Junctions|Biao Jin,Gang Su,Qing-Rong Zheng###
(907729, 907729)
 In addition, a quantum critical point (Q<missing VAR>CP), % VQ<missing VAR>CP, isidentified.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 2, ',', 1],[122.0, 1, 'and', 1],[124.0, 2, ',', 1]

V
###First- and Second-Order Phase Transitions, Fulde-Ferrel Inhomogeneous State and Quantum Criticality in Ferromagnet/Superconductor Double Tunnel Junctions|Biao Jin,Gang Su,Qing-Rong Zheng###
(907735, 907735)
 In addition, a quantum critical point (Q<missing VAR>CP), % VQ<missing VAR>CP, isidentified.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 2, ',', 1],[116.0, 1, 'and', 1],[118.0, 2, ',', 1]

CP
###First- and Second-Order Phase Transitions, Fulde-Ferrel Inhomogeneous State and Quantum Criticality in Ferromagnet/Superconductor Double Tunnel Junctions|Biao Jin,Gang Su,Qing-Rong Zheng###
(907737, 907738)
 In addition, a quantum critical point (Q<missing VAR>CP), % VQ<missing VAR>CP, isidentified.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 2, ',', 1],[113.0, 1, 'and', 1],[115.0, 2, ',', 1]

CP
###First- and Second-Order Phase Transitions, Fulde-Ferrel Inhomogeneous State and Quantum Criticality in Ferromagnet/Superconductor Double Tunnel Junctions|Biao Jin,Gang Su,Qing-Rong Zheng###
(907760, 907761)
 It is uncovered that near the Q<missing VAR>CP, the SC gap, the chemicalpotential shift induced by the spin accumulation, and the difference of freeenergies between the SC and normal states vanish as % V-VQ<missing VAR>CPz<missing VAR>nu withthe quantum critical exponents z<missing VAR>nu 1/2, 1 and 2, respectively.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 2, ',', 0],[90.0, 1, 'and', 0],[92.0, 2, ',', 0]

SC
###First- and Second-Order Phase Transitions, Fulde-Ferrel Inhomogeneous State and Quantum Criticality in Ferromagnet/Superconductor Double Tunnel Junctions|Biao Jin,Gang Su,Qing-Rong Zheng###
(907766, 907767)
 It is uncovered that near the Q<missing VAR>CP, the SC gap, the chemicalpotential shift induced by the spin accumulation, and the difference of freeenergies between the SC and normal states vanish as % V-VQ<missing VAR>CPz<missing VAR>nu withthe quantum critical exponents z<missing VAR>nu 1/2, 1 and 2, respectively.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 2, ',', 0],[84.0, 1, 'and', 0],[86.0, 2, ',', 0]

SC
###First- and Second-Order Phase Transitions, Fulde-Ferrel Inhomogeneous State and Quantum Criticality in Ferromagnet/Superconductor Double Tunnel Junctions|Biao Jin,Gang Su,Qing-Rong Zheng###
(907809, 907810)
 It is uncovered that near the Q<missing VAR>CP, the SC gap, the chemicalpotential shift induced by the spin accumulation, and the difference of freeenergies between the SC and normal states vanish as % V-VQ<missing VAR>CPz<missing VAR>nu withthe quantum critical exponents z<missing VAR>nu 1/2, 1 and 2, respectively.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 2, ',', 0],[41.0, 1, 'and', 0],[43.0, 2, ',', 0]

V
###First- and Second-Order Phase Transitions, Fulde-Ferrel Inhomogeneous State and Quantum Criticality in Ferromagnet/Superconductor Double Tunnel Junctions|Biao Jin,Gang Su,Qing-Rong Zheng###
(907824, 907824)
 It is uncovered that near the Q<missing VAR>CP, the SC gap, the chemicalpotential shift induced by the spin accumulation, and the difference of freeenergies between the SC and normal states vanish as % V-VQ<missing VAR>CPz<missing VAR>nu withthe quantum critical exponents z<missing VAR>nu 1/2, 1 and 2, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 2, ',', 0],[27.0, 1, 'and', 0],[29.0, 2, ',', 0]

V
###First- and Second-Order Phase Transitions, Fulde-Ferrel Inhomogeneous State and Quantum Criticality in Ferromagnet/Superconductor Double Tunnel Junctions|Biao Jin,Gang Su,Qing-Rong Zheng###
(907826, 907826)
 It is uncovered that near the Q<missing VAR>CP, the SC gap, the chemicalpotential shift induced by the spin accumulation, and the difference of freeenergies between the SC and normal states vanish as % V-VQ<missing VAR>CPz<missing VAR>nu withthe quantum critical exponents z<missing VAR>nu 1/2, 1 and 2, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 2, ',', 0],[25.0, 1, 'and', 0],[27.0, 2, ',', 0]

CP
###First- and Second-Order Phase Transitions, Fulde-Ferrel Inhomogeneous State and Quantum Criticality in Ferromagnet/Superconductor Double Tunnel Junctions|Biao Jin,Gang Su,Qing-Rong Zheng###
(907828, 907829)
 It is uncovered that near the Q<missing VAR>CP, the SC gap, the chemicalpotential shift induced by the spin accumulation, and the difference of freeenergies between the SC and normal states vanish as % V-VQ<missing VAR>CPz<missing VAR>nu withthe quantum critical exponents z<missing VAR>nu 1/2, 1 and 2, respectively.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 2, ',', 0],[22.0, 1, 'and', 0],[24.0, 2, ',', 0]

C
###Mott-Hubbard quantum criticality in paramagnetic CMR pyrochlores|L. Craco,C. I. Ventura,A. N. Yaresko,E. Müller-Hartmann###
(907897, 907897)
Mott-Hubbard quantum criticality in paramagnetic CMR pyrochlores.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tl2Mn2O7
###Mott-Hubbard quantum criticality in paramagnetic CMR pyrochlores|L. Craco,C. I. Ventura,A. N. Yaresko,E. Müller-Hartmann###
(907931, 907936)
 We present a correlated it ab initio description of the paramagnetic phaseof Tl2Mn2O7, employing a combined local density approximation (LDA)with multiorbital dynamical mean field theory (DMFT) treatment.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6363636363636364,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Mott-Hubbard quantum criticality in paramagnetic CMR pyrochlores|L. Craco,C. I. Ventura,A. N. Yaresko,E. Müller-Hartmann###
(907973, 907973)
 We present a correlated it ab initio description of the paramagnetic phaseof Tl2Mn2O7, employing a combined local density approximation (LDA)with multiorbital dynamical mean field theory (DMFT) treatment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Mott-Hubbard quantum criticality in paramagnetic CMR pyrochlores|L. Craco,C. I. Ventura,A. N. Yaresko,E. Müller-Hartmann###
(908004, 908004)
 We show thatthe insulating state observed in this colossal magnetoresistance (CMR)pyrochlore is determined by strong Mn intra- and inter-orbital localelectron-electron interactions.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Mott-Hubbard quantum criticality in paramagnetic CMR pyrochlores|L. Craco,C. I. Ventura,A. N. Yaresko,E. Müller-Hartmann###
(908020, 908020)
 We show thatthe insulating state observed in this colossal magnetoresistance (CMR)pyrochlore is determined by strong Mn intra- and inter-orbital localelectron-electron interactions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tl2Mn2O7
###Mott-Hubbard quantum criticality in paramagnetic CMR pyrochlores|L. Craco,C. I. Ventura,A. N. Yaresko,E. Müller-Hartmann###
(908147, 908152)
 Based on this agreement, we study the disorder-driveninsulator-metal transition of doped compounds, showing the proximity ofTl2Mn2O7 to quantum phase transitions, in agreement with recentmeasurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6363636363636364,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Anomalous magnetoresistance peak in (110) GaAs two-dimensional holes: Evidence for Landau-level spin-index anticrossings|F. Fischer,R. Winkler,D. Schuh,M. Bichler,M. Grayson###
(908195, 908196)
Anomalous magnetoresistance peak in (110) GaAs two-dimensional holes Evidence for Landau-level spin-index anticrossings.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Anomalous magnetoresistance peak in (110) GaAs two-dimensional holes: Evidence for Landau-level spin-index anticrossings|F. Fischer,R. Winkler,D. Schuh,M. Bichler,M. Grayson###
(908269, 908270)
 We measure an anomalous magnetoresistance peak within the lowest Landau level(nu  1) minimum of a two-dimensional hole system on (110) GaAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Anomalous magnetoresistance peak in (110) GaAs two-dimensional holes: Evidence for Landau-level spin-index anticrossings|F. Fischer,R. Winkler,D. Schuh,M. Bichler,M. Grayson###
(908321, 908321)
Self-consistent calculations of the valence band mixing show that the twolowest spin-index Landau levels anticross in a perpendicular magnetic field Bconsistent with where the experimental peak is measured, Bp.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sm0.5Ca0.5MnO3
###Stress deformations and structural quenching in Sm0.5Ca0.5MnO3 thin films allow a huge decrease of the charge order melting magnetic field|E. Rauwel,W. Prellier,B. Mercey,S. de Brion,G. Chouteau###
(908513, 908519)
Stress deformations and structural quenching in Sm0.5Ca0.5MnO3 thin films allow a huge decrease of the charge order melting magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 24, 'T', 3]

Sm0.5Ca0.5MnO3
###Stress deformations and structural quenching in Sm0.5Ca0.5MnO3 thin films allow a huge decrease of the charge order melting magnetic field|E. Rauwel,W. Prellier,B. Mercey,S. de Brion,G. Chouteau###
(908554, 908560)
 Thin films of Sm0.5Ca0.5MnO3 manganites with charge ordering (CO) propertiesand colossal magnetoresistance were synthesized by pulsed laser depositiontechnique on (100)-SrTiO3 and (100)-LaAlO3 substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 24, 'T', 2]

(CO)
###Stress deformations and structural quenching in Sm0.5Ca0.5MnO3 thin films allow a huge decrease of the charge order melting magnetic field|E. Rauwel,W. Prellier,B. Mercey,S. de Brion,G. Chouteau###
(908570, 908573)
 Thin films of Sm0.5Ca0.5MnO3 manganites with charge ordering (CO) propertiesand colossal magnetoresistance were synthesized by pulsed laser depositiontechnique on (100)-SrTiO3 and (100)-LaAlO3 substrates.
Featurization successful!
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 24, 'T', 2]

SrTiO3
###Stress deformations and structural quenching in Sm0.5Ca0.5MnO3 thin films allow a huge decrease of the charge order melting magnetic field|E. Rauwel,W. Prellier,B. Mercey,S. de Brion,G. Chouteau###
(908605, 908608)
 Thin films of Sm0.5Ca0.5MnO3 manganites with charge ordering (CO) propertiesand colossal magnetoresistance were synthesized by pulsed laser depositiontechnique on (100)-SrTiO3 and (100)-LaAlO3 substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 24, 'T', 2]

LaAlO3
###Stress deformations and structural quenching in Sm0.5Ca0.5MnO3 thin films allow a huge decrease of the charge order melting magnetic field|E. Rauwel,W. Prellier,B. Mercey,S. de Brion,G. Chouteau###
(908616, 908619)
 Thin films of Sm0.5Ca0.5MnO3 manganites with charge ordering (CO) propertiesand colossal magnetoresistance were synthesized by pulsed laser depositiontechnique on (100)-SrTiO3 and (100)-LaAlO3 substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 24, 'T', 2]

CO
###Stress deformations and structural quenching in Sm0.5Ca0.5MnO3 thin films allow a huge decrease of the charge order melting magnetic field|E. Rauwel,W. Prellier,B. Mercey,S. de Brion,G. Chouteau###
(908702, 908703)
Secondly, measuring transport properties in magnetic fields up to 24T, weestablish the temperature-field phase diagram describing the stability of theCO state and compare it to bulk material.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 24, 'T', 0]

CO
###Stress deformations and structural quenching in Sm0.5Ca0.5MnO3 thin films allow a huge decrease of the charge order melting magnetic field|E. Rauwel,W. Prellier,B. Mercey,S. de Brion,G. Chouteau###
(908749, 908750)
 We show that some structuralmodification induced by the substrate occurs and that the CO melting magneticfield is greatly reduced.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 24, 'T', 1]

CO
###Stress deformations and structural quenching in Sm0.5Ca0.5MnO3 thin films allow a huge decrease of the charge order melting magnetic field|E. Rauwel,W. Prellier,B. Mercey,S. de Brion,G. Chouteau###
(908868, 908869)
 We then propose anexplanation based on the quenching of the unit cell of the film that adopts thein-plane lattice parameters of the substrate and thus, prevents the completegrowth of the CO state at low temperature.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[195.0, 24, 'T', 3]

CoFeB/Ru/CoFeB
###Antiferromagnetically coupled CoFeB/Ru/CoFeB trilayers|N. Wiese,T. Dimopoulos,M. Ruhrig,J. Wecker,H. Bruckl,G. Reiss###
(908892, 908900)
Antiferromagnetically coupled CoFeB/Ru/CoFeB trilayers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[99.0, 1.1, 'nm', 2],[138.0, 1.1, 'nm', 3],[213.0, 300, 'degree', 5],[225.0, 350, 'degree', 5],[290.0, 50, '%', 6]

CoFeB
###Antiferromagnetically coupled CoFeB/Ru/CoFeB trilayers|N. Wiese,T. Dimopoulos,M. Ruhrig,J. Wecker,H. Bruckl,G. Reiss###
(908928, 908930)
 This work reports on the magnetic interlayer coupling between two amorphousCoFeB layers, separated by a thin Ru spacer.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 1.1, 'nm', 1],[108.0, 1.1, 'nm', 2],[183.0, 300, 'degree', 4],[195.0, 350, 'degree', 4],[260.0, 50, '%', 5]

Ru
###Antiferromagnetically coupled CoFeB/Ru/CoFeB trilayers|N. Wiese,T. Dimopoulos,M. Ruhrig,J. Wecker,H. Bruckl,G. Reiss###
(908943, 908943)
 This work reports on the magnetic interlayer coupling between two amorphousCoFeB layers, separated by a thin Ru spacer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 1.1, 'nm', 1],[95.0, 1.1, 'nm', 2],[170.0, 300, 'degree', 4],[182.0, 350, 'degree', 4],[247.0, 50, '%', 5]

Ru
###Antiferromagnetically coupled CoFeB/Ru/CoFeB trilayers|N. Wiese,T. Dimopoulos,M. Ruhrig,J. Wecker,H. Bruckl,G. Reiss###
(908973, 908973)
 We observe an antiferromagneticcoupling which oscillates as a function of the Ru thickness x<missing VAR>, with the secondantiferromagnetic maximum found for x<missing VAR>1.0 to 1.1 nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 1.1, 'nm', 0],[65.0, 1.1, 'nm', 1],[140.0, 300, 'degree', 3],[152.0, 350, 'degree', 3],[217.0, 50, '%', 4]

CoFeB/Ru/CoFeB
###Antiferromagnetically coupled CoFeB/Ru/CoFeB trilayers|N. Wiese,T. Dimopoulos,M. Ruhrig,J. Wecker,H. Bruckl,G. Reiss###
(909017, 909025)
 We have studied theswitching of a CoFeB/Ru/CoFeB trilayer for a Ru thickness of 1.1 nm and foundthat the coercivity depends on the net magnetic moment, i.e.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[18.0, 1.1, 'nm', 1],[13.0, 1.1, 'nm', 0],[88.0, 300, 'degree', 2],[100.0, 350, 'degree', 2],[165.0, 50, '%', 3]

Ru
###Antiferromagnetically coupled CoFeB/Ru/CoFeB trilayers|N. Wiese,T. Dimopoulos,M. Ruhrig,J. Wecker,H. Bruckl,G. Reiss###
(909033, 909033)
 We have studied theswitching of a CoFeB/Ru/CoFeB trilayer for a Ru thickness of 1.1 nm and foundthat the coercivity depends on the net magnetic moment, i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 1.1, 'nm', 1],[5.0, 1.1, 'nm', 0],[80.0, 300, 'degree', 2],[92.0, 350, 'degree', 2],[157.0, 50, '%', 3]

CoFeB
###Antiferromagnetically coupled CoFeB/Ru/CoFeB trilayers|N. Wiese,T. Dimopoulos,M. Ruhrig,J. Wecker,H. Bruckl,G. Reiss###
(909082, 909084)
 the thicknessdifference of the two CoFeB layers.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 1.1, 'nm', 2],[44.0, 1.1, 'nm', 1],[29.0, 300, 'degree', 1],[41.0, 350, 'degree', 1],[106.0, 50, '%', 2]

C
###Antiferromagnetically coupled CoFeB/Ru/CoFeB trilayers|N. Wiese,T. Dimopoulos,M. Ruhrig,J. Wecker,H. Bruckl,G. Reiss###
(909115, 909115)
 The antiferromagnetic coupling is almostindependent on the annealing temperatures up to 300 degree C while an annealingat 350 degree C reduces the coupling and increases the coercivity, indicatingthe onset of crystallization.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 1.1, 'nm', 3],[77.0, 1.1, 'nm', 2],[2.0, 300, 'degree', 0],[10.0, 350, 'degree', 0],[75.0, 50, '%', 1]

C
###Antiferromagnetically coupled CoFeB/Ru/CoFeB trilayers|N. Wiese,T. Dimopoulos,M. Ruhrig,J. Wecker,H. Bruckl,G. Reiss###
(909127, 909127)
 The antiferromagnetic coupling is almostindependent on the annealing temperatures up to 300 degree C while an annealingat 350 degree C reduces the coupling and increases the coercivity, indicatingthe onset of crystallization.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 1.1, 'nm', 3],[89.0, 1.1, 'nm', 2],[14.0, 300, 'degree', 0],[2.0, 350, 'degree', 0],[63.0, 50, '%', 1]

MgO
###Spin Transfer Switching and Spin Polarization in Magnetic Tunnel Junctions with Mgo and Alox Barriers|Zhitao Diao,Dmytro Apalkov,Mahendra Pakala,Alex Panchula,Yiming Huai###
(909271, 909272)
 We present spin transfer switching results for MgO based magnetic tunnelingjunctions (MTJs)with large tunneling magnetoresistance (TMR) ratio of up to150% and low intrinsic switching current density of 2-3 x<missing VAR> 10 MA/cm2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 150, '%', 0],[61.0, 10, 'MA', 0],[233.0, 0.22, 'for', 3],[239.0, 0.46, 'for', 3]

Al
###Spin Transfer Switching and Spin Polarization in Magnetic Tunnel Junctions with Mgo and Alox Barriers|Zhitao Diao,Dmytro Apalkov,Mahendra Pakala,Alex Panchula,Yiming Huai###
(909369, 909369)
 Theswitching data are compared to those obtained on similar MTJ nanostructureswith AlOx barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 150, '%', 1],[36.0, 10, 'MA', 1],[136.0, 0.22, 'for', 2],[142.0, 0.46, 'for', 2]

MgO
###Spin Transfer Switching and Spin Polarization in Magnetic Tunnel Junctions with Mgo and Alox Barriers|Zhitao Diao,Dmytro Apalkov,Mahendra Pakala,Alex Panchula,Yiming Huai###
(909393, 909394)
 It is observed that the switching current density for MgObased MTJs is 3-4 times smaller than that for AlOx based MTJs, and that can beattributed to higher tunneling spin polarization (T<missing VAR>SP) in MgO based MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 150, '%', 2],[60.0, 10, 'MA', 2],[111.0, 0.22, 'for', 1],[117.0, 0.46, 'for', 1]

Al
###Spin Transfer Switching and Spin Polarization in Magnetic Tunnel Junctions with Mgo and Alox Barriers|Zhitao Diao,Dmytro Apalkov,Mahendra Pakala,Alex Panchula,Yiming Huai###
(909419, 909419)
 It is observed that the switching current density for MgObased MTJs is 3-4 times smaller than that for AlOx based MTJs, and that can beattributed to higher tunneling spin polarization (T<missing VAR>SP) in MgO based MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 150, '%', 2],[86.0, 10, 'MA', 2],[86.0, 0.22, 'for', 1],[92.0, 0.46, 'for', 1]

P
###Spin Transfer Switching and Spin Polarization in Magnetic Tunnel Junctions with Mgo and Alox Barriers|Zhitao Diao,Dmytro Apalkov,Mahendra Pakala,Alex Panchula,Yiming Huai###
(909453, 909453)
 It is observed that the switching current density for MgObased MTJs is 3-4 times smaller than that for AlOx based MTJs, and that can beattributed to higher tunneling spin polarization (T<missing VAR>SP) in MgO based MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 150, '%', 2],[120.0, 10, 'MA', 2],[52.0, 0.22, 'for', 1],[58.0, 0.46, 'for', 1]

MgO
###Spin Transfer Switching and Spin Polarization in Magnetic Tunnel Junctions with Mgo and Alox Barriers|Zhitao Diao,Dmytro Apalkov,Mahendra Pakala,Alex Panchula,Yiming Huai###
(909458, 909459)
 It is observed that the switching current density for MgObased MTJs is 3-4 times smaller than that for AlOx based MTJs, and that can beattributed to higher tunneling spin polarization (T<missing VAR>SP) in MgO based MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 150, '%', 2],[125.0, 10, 'MA', 2],[46.0, 0.22, 'for', 1],[52.0, 0.46, 'for', 1]

In
###Spin Transfer Switching and Spin Polarization in Magnetic Tunnel Junctions with Mgo and Alox Barriers|Zhitao Diao,Dmytro Apalkov,Mahendra Pakala,Alex Panchula,Yiming Huai###
(909468, 909468)
 Inaddition, we report a qualitative study of T<missing VAR>SP for a set of samples, rangingfrom 0.22 for AlOx to 0.46 for MgO based MTJs, and that shows the T<missing VAR>SP (atfinite bias) responsible for the current-driven magnetization switching issuppressed as compared to zero-bias tunneling spin polarization determined fromTMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 150, '%', 3],[135.0, 10, 'MA', 3],[37.0, 0.22, 'for', 0],[43.0, 0.46, 'for', 0]

SP
###Spin Transfer Switching and Spin Polarization in Magnetic Tunnel Junctions with Mgo and Alox Barriers|Zhitao Diao,Dmytro Apalkov,Mahendra Pakala,Alex Panchula,Yiming Huai###
(909487, 909488)
 Inaddition, we report a qualitative study of T<missing VAR>SP for a set of samples, rangingfrom 0.22 for AlOx to 0.46 for MgO based MTJs, and that shows the T<missing VAR>SP (atfinite bias) responsible for the current-driven magnetization switching issuppressed as compared to zero-bias tunneling spin polarization determined fromTMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[176.0, 150, '%', 3],[154.0, 10, 'MA', 3],[17.0, 0.22, 'for', 0],[23.0, 0.46, 'for', 0]

Al
###Spin Transfer Switching and Spin Polarization in Magnetic Tunnel Junctions with Mgo and Alox Barriers|Zhitao Diao,Dmytro Apalkov,Mahendra Pakala,Alex Panchula,Yiming Huai###
(909507, 909507)
 Inaddition, we report a qualitative study of T<missing VAR>SP for a set of samples, rangingfrom 0.22 for AlOx to 0.46 for MgO based MTJs, and that shows the T<missing VAR>SP (atfinite bias) responsible for the current-driven magnetization switching issuppressed as compared to zero-bias tunneling spin polarization determined fromTMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[196.0, 150, '%', 3],[174.0, 10, 'MA', 3],[2.0, 0.22, 'for', 0],[4.0, 0.46, 'for', 0]

MgO
###Spin Transfer Switching and Spin Polarization in Magnetic Tunnel Junctions with Mgo and Alox Barriers|Zhitao Diao,Dmytro Apalkov,Mahendra Pakala,Alex Panchula,Yiming Huai###
(909513, 909514)
 Inaddition, we report a qualitative study of T<missing VAR>SP for a set of samples, rangingfrom 0.22 for AlOx to 0.46 for MgO based MTJs, and that shows the T<missing VAR>SP (atfinite bias) responsible for the current-driven magnetization switching issuppressed as compared to zero-bias tunneling spin polarization determined fromTMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[202.0, 150, '%', 3],[180.0, 10, 'MA', 3],[8.0, 0.22, 'for', 0],[2.0, 0.46, 'for', 0]

SP
###Spin Transfer Switching and Spin Polarization in Magnetic Tunnel Junctions with Mgo and Alox Barriers|Zhitao Diao,Dmytro Apalkov,Mahendra Pakala,Alex Panchula,Yiming Huai###
(909532, 909533)
 Inaddition, we report a qualitative study of T<missing VAR>SP for a set of samples, rangingfrom 0.22 for AlOx to 0.46 for MgO based MTJs, and that shows the T<missing VAR>SP (atfinite bias) responsible for the current-driven magnetization switching issuppressed as compared to zero-bias tunneling spin polarization determined fromTMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[221.0, 150, '%', 3],[199.0, 10, 'MA', 3],[27.0, 0.22, 'for', 0],[21.0, 0.46, 'for', 0]

La2
###Modulated optical reflectance measurements on La2/3Sr1/3MnO3 thin films|Laurence Mechin,Stephane Flament,Andy Perry,Darryl P. Almond,Radoslav A. Chakalov###
(909607, 909608)
Modulated optical reflectance measurements on La2/3Sr1/3MnO3 thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 400, 'microns', 3],[194.0, 240, 'and', 4],[195.0, 400, 'K', 4]

Sr1
###Modulated optical reflectance measurements on La2/3Sr1/3MnO3 thin films|Laurence Mechin,Stephane Flament,Andy Perry,Darryl P. Almond,Radoslav A. Chakalov###
(909611, 909612)
Modulated optical reflectance measurements on La2/3Sr1/3MnO3 thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 400, 'microns', 3],[190.0, 240, 'and', 4],[191.0, 400, 'K', 4]

MnO3
###Modulated optical reflectance measurements on La2/3Sr1/3MnO3 thin films|Laurence Mechin,Stephane Flament,Andy Perry,Darryl P. Almond,Radoslav A. Chakalov###
(909615, 909617)
Modulated optical reflectance measurements on La2/3Sr1/3MnO3 thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 400, 'microns', 3],[185.0, 240, 'and', 4],[186.0, 400, 'K', 4]

La2
###Modulated optical reflectance measurements on La2/3Sr1/3MnO3 thin films|Laurence Mechin,Stephane Flament,Andy Perry,Darryl P. Almond,Radoslav A. Chakalov###
(909661, 909662)
 The modulated optical reflectance (MOR) measurement technique was applied tocolossal magnetoresistive materials, in particular, La2/3Sr1/3MnO3 (LSMO) thinfilms.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 400, 'microns', 2],[140.0, 240, 'and', 3],[141.0, 400, 'K', 3]

Sr1
###Modulated optical reflectance measurements on La2/3Sr1/3MnO3 thin films|Laurence Mechin,Stephane Flament,Andy Perry,Darryl P. Almond,Radoslav A. Chakalov###
(909665, 909666)
 The modulated optical reflectance (MOR) measurement technique was applied tocolossal magnetoresistive materials, in particular, La2/3Sr1/3MnO3 (LSMO) thinfilms.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 400, 'microns', 2],[136.0, 240, 'and', 3],[137.0, 400, 'K', 3]

MnO3
###Modulated optical reflectance measurements on La2/3Sr1/3MnO3 thin films|Laurence Mechin,Stephane Flament,Andy Perry,Darryl P. Almond,Radoslav A. Chakalov###
(909669, 909671)
 The modulated optical reflectance (MOR) measurement technique was applied tocolossal magnetoresistive materials, in particular, La2/3Sr1/3MnO3 (LSMO) thinfilms.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 400, 'microns', 2],[131.0, 240, 'and', 3],[132.0, 400, 'K', 3]

O
###Modulated optical reflectance measurements on La2/3Sr1/3MnO3 thin films|Laurence Mechin,Stephane Flament,Andy Perry,Darryl P. Almond,Radoslav A. Chakalov###
(909677, 909677)
 The modulated optical reflectance (MOR) measurement technique was applied tocolossal magnetoresistive materials, in particular, La2/3Sr1/3MnO3 (LSMO) thinfilms.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 400, 'microns', 2],[125.0, 240, 'and', 3],[126.0, 400, 'K', 3]

O
###Modulated optical reflectance measurements on La2/3Sr1/3MnO3 thin films|Laurence Mechin,Stephane Flament,Andy Perry,Darryl P. Almond,Radoslav A. Chakalov###
(909770, 909770)
 A contrasted room temperature surface scan of a100 microns wide 400 microns long bridge patterned into LSMO film providedpreliminary information about the film homogeneity.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 400, 'microns', 0],[32.0, 240, 'and', 1],[33.0, 400, 'K', 1]

O
###Modulated optical reflectance measurements on La2/3Sr1/3MnO3 thin films|Laurence Mechin,Stephane Flament,Andy Perry,Darryl P. Almond,Radoslav A. Chakalov###
(909926, 909926)
 This relationship is fundamental for the MORtechnique and its mechanism was explored in the particular case of LSMO.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 400, 'microns', 4],[124.0, 240, 'and', 3],[123.0, 400, 'K', 3]

CoFeB/MgO/CoFeB
###Current-driven magnetization switching in CoFeB/MgO/CoFeB magnetic tunnel junctions|Jun Hayakawa,Shoji Ikeda,Young Min Lee,Ryutaro Sasaki,Toshiyasu Meguro,Fumihiro Matsukura,Hiromasa Takahashi,Hideo Ohno###
(910009, 910018)
Current-driven magnetization switching in CoFeB/MgO/CoFeB magnetic tunnel junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[87.0, 270, 'C', 2],[90.0, 300, 'C', 2],[105.0, 7.8, 'x', 2],[116.0, 8.8, 'x', 2],[145.0, 49, '%', 2],[170.0, 350, 'C', 3],[197.0, 2.5, 'x', 3]

Co40Fe40B20/MgO/Co40Fe40B20
###Current-driven magnetization switching in CoFeB/MgO/CoFeB magnetic tunnel junctions|Jun Hayakawa,Shoji Ikeda,Young Min Lee,Ryutaro Sasaki,Toshiyasu Meguro,Fumihiro Matsukura,Hiromasa Takahashi,Hideo Ohno###
(910042, 910057)
 Current-driven magnetization switching in low-resistanceCo40Fe40B20/MgO/Co40Fe40B20 magnetic tunnel junctions (MTJs) is reported.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[48.0, 270, 'C', 1],[51.0, 300, 'C', 1],[66.0, 7.8, 'x', 1],[77.0, 8.8, 'x', 1],[106.0, 49, '%', 1],[131.0, 350, 'C', 2],[158.0, 2.5, 'x', 2]

V
###Current-driven magnetization switching in CoFeB/MgO/CoFeB magnetic tunnel junctions|Jun Hayakawa,Shoji Ikeda,Young Min Lee,Ryutaro Sasaki,Toshiyasu Meguro,Fumihiro Matsukura,Hiromasa Takahashi,Hideo Ohno###
(910259, 910259)
 Weattribute the low Jc to the high spin-polarization of tunnel current and smallMsV product of the CoFeB single free layer, where Ms is the saturationmagnetization and V the volume of the free layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 270, 'C', 2],[151.0, 300, 'C', 2],[136.0, 7.8, 'x', 2],[125.0, 8.8, 'x', 2],[96.0, 49, '%', 2],[71.0, 350, 'C', 1],[44.0, 2.5, 'x', 1]

CoFeB
###Current-driven magnetization switching in CoFeB/MgO/CoFeB magnetic tunnel junctions|Jun Hayakawa,Shoji Ikeda,Young Min Lee,Ryutaro Sasaki,Toshiyasu Meguro,Fumihiro Matsukura,Hiromasa Takahashi,Hideo Ohno###
(910267, 910269)
 Weattribute the low Jc to the high spin-polarization of tunnel current and smallMsV product of the CoFeB single free layer, where Ms is the saturationmagnetization and V the volume of the free layer.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 270, 'C', 2],[159.0, 300, 'C', 2],[144.0, 7.8, 'x', 2],[133.0, 8.8, 'x', 2],[104.0, 49, '%', 2],[79.0, 350, 'C', 1],[52.0, 2.5, 'x', 1]

V
###Current-driven magnetization switching in CoFeB/MgO/CoFeB magnetic tunnel junctions|Jun Hayakawa,Shoji Ikeda,Young Min Lee,Ryutaro Sasaki,Toshiyasu Meguro,Fumihiro Matsukura,Hiromasa Takahashi,Hideo Ohno###
(910293, 910293)
 Weattribute the low Jc to the high spin-polarization of tunnel current and smallMsV product of the CoFeB single free layer, where Ms is the saturationmagnetization and V the volume of the free layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 270, 'C', 2],[185.0, 300, 'C', 2],[170.0, 7.8, 'x', 2],[159.0, 8.8, 'x', 2],[130.0, 49, '%', 2],[105.0, 350, 'C', 1],[78.0, 2.5, 'x', 1]

(SI)
###Measuring the Localization Length through the superconductor-insulator transition in ultrathin amorphous beryllium films|Wenhao Wu,E. Bielejec###
(910631, 910634)
 Electron transport and tunneling across the superconductor-insulator (SI)transition have been measured simultaneously for quench-condensed ultrathinamorphous beryllium films.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, 20, 'K', 3]

Mn
###Measuring the Localization Length through the superconductor-insulator transition in ultrathin amorphous beryllium films|Wenhao Wu,E. Bielejec###
(910686, 910686)
 The anomalous negative magnetoresistance previouslyobserved in insulating films disappears when Mn impurities are introduced tothe films, restoring a rather clean Efros-Shklovskii type hopping behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 20, 'K', 2]

As
###Measuring the Localization Length through the superconductor-insulator transition in ultrathin amorphous beryllium films|Wenhao Wu,E. Bielejec###
(910800, 910800)
 As thenormal-state sheet resistance of the films at 20 K is reduced with increasingfilm thickness, xiL<missing VAR> increases exponentially.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 20, 'K', 0]

SI
###Measuring the Localization Length through the superconductor-insulator transition in ultrathin amorphous beryllium films|Wenhao Wu,E. Bielejec###
(910846, 910847)
 The SI transition occurs whenxiL<missing VAR> crosses the Ginzburg-Landau coherence length, xiS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 20, 'K', 1]

S
###Measuring the Localization Length through the superconductor-insulator transition in ultrathin amorphous beryllium films|Wenhao Wu,E. Bielejec###
(910873, 910873)
 The SI transition occurs whenxiL<missing VAR> crosses the Ginzburg-Landau coherence length, xiS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 20, 'K', 1]

S
###Charge ordering, stripes and phase separation in manganese perovskite oxides: an STM/STS study|Ch. Renner,G. Aeppli,H. M. Ronnow###
(910907, 910907)
Charge ordering, stripes and phase separation in manganese perovskite oxides an STM/ST<missing VAR>S study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Charge ordering, stripes and phase separation in manganese perovskite oxides: an STM/STS study|Ch. Renner,G. Aeppli,H. M. Ronnow###
(910911, 910911)
Charge ordering, stripes and phase separation in manganese perovskite oxides an STM/ST<missing VAR>S study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Charge ordering, stripes and phase separation in manganese perovskite oxides: an STM/STS study|Ch. Renner,G. Aeppli,H. M. Ronnow###
(910913, 910913)
Charge ordering, stripes and phase separation in manganese perovskite oxides an STM/ST<missing VAR>S study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Charge ordering, stripes and phase separation in manganese perovskite oxides: an STM/STS study|Ch. Renner,G. Aeppli,H. M. Ronnow###
(910942, 910942)
 A microscopic characterisation of the phase transitions associated withcolossal magnetoresistance (CMR) in manganese perovskite oxides is a veryimportant ingredient in the quest of understanding its underlying mechanism.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Charge ordering, stripes and phase separation in manganese perovskite oxides: an STM/STS study|Ch. Renner,G. Aeppli,H. M. Ronnow###
(910991, 910991)
Scanning tunneling microscopy (STM) is most suitable to investigate some oftheir reported hallmarks, including charge ordering, lattice distortions, andelectronic phase separation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi1-XCa
###Charge ordering, stripes and phase separation in manganese perovskite oxides: an STM/STS study|Ch. Renner,G. Aeppli,H. M. Ronnow###
(911046, 911050)
 Here we investigate Bi1-XCaX<missing VAR>MnO3 (BCM<missing VAR>O) withx<missing VAR>0.76.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

MnO3
###Charge ordering, stripes and phase separation in manganese perovskite oxides: an STM/STS study|Ch. Renner,G. Aeppli,H. M. Ronnow###
(911052, 911054)
 Here we investigate Bi1-XCaX<missing VAR>MnO3 (BCM<missing VAR>O) withx<missing VAR>0.76.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BC
###Charge ordering, stripes and phase separation in manganese perovskite oxides: an STM/STS study|Ch. Renner,G. Aeppli,H. M. Ronnow###
(911057, 911058)
 Here we investigate Bi1-XCaX<missing VAR>MnO3 (BCM<missing VAR>O) withx<missing VAR>0.76.
Featurization terminated normally.
0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Charge ordering, stripes and phase separation in manganese perovskite oxides: an STM/STS study|Ch. Renner,G. Aeppli,H. M. Ronnow###
(911060, 911060)
 Here we investigate Bi1-XCaX<missing VAR>MnO3 (BCM<missing VAR>O) withx<missing VAR>0.76.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Charge ordering, stripes and phase separation in manganese perovskite oxides: an STM/STS study|Ch. Renner,G. Aeppli,H. M. Ronnow###
(911070, 911070)
 At this composition, BCM<missing VAR>O develops an insulating charge-ordered phaseupon cooling, whose study as a function of temperature will allow identifyingatomic scale characteristics of the metal-insulator phase transition (MIT).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BC
###Charge ordering, stripes and phase separation in manganese perovskite oxides: an STM/STS study|Ch. Renner,G. Aeppli,H. M. Ronnow###
(911077, 911078)
 At this composition, BCM<missing VAR>O develops an insulating charge-ordered phaseupon cooling, whose study as a function of temperature will allow identifyingatomic scale characteristics of the metal-insulator phase transition (MIT).
Featurization terminated normally.
0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Charge ordering, stripes and phase separation in manganese perovskite oxides: an STM/STS study|Ch. Renner,G. Aeppli,H. M. Ronnow###
(911080, 911080)
 At this composition, BCM<missing VAR>O develops an insulating charge-ordered phaseupon cooling, whose study as a function of temperature will allow identifyingatomic scale characteristics of the metal-insulator phase transition (MIT).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Charge ordering, stripes and phase separation in manganese perovskite oxides: an STM/STS study|Ch. Renner,G. Aeppli,H. M. Ronnow###
(911194, 911194)
 Combining STMmicrographs and current-voltage tunneling characteristics, we find that chargeordering correlates both with the local conduction state (metallic orinsulating) and the local structural order.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Charge ordering, stripes and phase separation in manganese perovskite oxides: an STM/STS study|Ch. Renner,G. Aeppli,H. M. Ronnow###
(911260, 911260)
 Furthermore, STM shows coexistenceof these phases as expected for a first order phase transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.7Ca0.3MnO3
###Effect of ferroelectric layers on the magnetocapacitance properties of superlattices-based oxide multiferroics|M. P. Singh,W. Prellier,L. Mechin,W. Prellier###
(911342, 911348)
 A series of superlattices composed of ferromagneticLa0.7Ca0.3MnO3 (LCMO) and ferroelectric/paraelectricBa1-xSrx<missing VAR>TiO3 (0leq x<missing VAR>leq 1) were deposited on SrTiO3substrates using the pulsed laser deposition.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 30, '%', 2],[195.0, 55, 'K', 4],[198.0, 105, 'K', 4],[278.0, 3, '%', 5]

O
###Effect of ferroelectric layers on the magnetocapacitance properties of superlattices-based oxide multiferroics|M. P. Singh,W. Prellier,L. Mechin,W. Prellier###
(911354, 911354)
 A series of superlattices composed of ferromagneticLa0.7Ca0.3MnO3 (LCMO) and ferroelectric/paraelectricBa1-xSrx<missing VAR>TiO3 (0leq x<missing VAR>leq 1) were deposited on SrTiO3substrates using the pulsed laser deposition.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 30, '%', 2],[189.0, 55, 'K', 4],[192.0, 105, 'K', 4],[272.0, 3, '%', 5]

Ba1-xSr
###Effect of ferroelectric layers on the magnetocapacitance properties of superlattices-based oxide multiferroics|M. P. Singh,W. Prellier,L. Mechin,W. Prellier###
(911364, 911368)
 A series of superlattices composed of ferromagneticLa0.7Ca0.3MnO3 (LCMO) and ferroelectric/paraelectricBa1-xSrx<missing VAR>TiO3 (0leq x<missing VAR>leq 1) were deposited on SrTiO3substrates using the pulsed laser deposition.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[118.0, 30, '%', 2],[175.0, 55, 'K', 4],[178.0, 105, 'K', 4],[258.0, 3, '%', 5]

TiO3
###Effect of ferroelectric layers on the magnetocapacitance properties of superlattices-based oxide multiferroics|M. P. Singh,W. Prellier,L. Mechin,W. Prellier###
(911370, 911372)
 A series of superlattices composed of ferromagneticLa0.7Ca0.3MnO3 (LCMO) and ferroelectric/paraelectricBa1-xSrx<missing VAR>TiO3 (0leq x<missing VAR>leq 1) were deposited on SrTiO3substrates using the pulsed laser deposition.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 30, '%', 2],[171.0, 55, 'K', 4],[174.0, 105, 'K', 4],[254.0, 3, '%', 5]

SrTiO3
###Effect of ferroelectric layers on the magnetocapacitance properties of superlattices-based oxide multiferroics|M. P. Singh,W. Prellier,L. Mechin,W. Prellier###
(911390, 911393)
 A series of superlattices composed of ferromagneticLa0.7Ca0.3MnO3 (LCMO) and ferroelectric/paraelectricBa1-xSrx<missing VAR>TiO3 (0leq x<missing VAR>leq 1) were deposited on SrTiO3substrates using the pulsed laser deposition.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 30, '%', 2],[150.0, 55, 'K', 4],[153.0, 105, 'K', 4],[233.0, 3, '%', 5]

K
###Effect of ferroelectric layers on the magnetocapacitance properties of superlattices-based oxide multiferroics|M. P. Singh,W. Prellier,L. Mechin,W. Prellier###
(911471, 911471)
Magnetotransport properties of the films reveal a ferromagnetic Curietemperature in the range of 145-158 K and negative magnetoresistance as high as30%, depending on the type of ferroelectric layers employed for their growth(QTRiti.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 30, '%', 0],[72.0, 55, 'K', 2],[75.0, 105, 'K', 2],[155.0, 3, '%', 3]

Al
###The quantum Hall ferromagnet at high filling factors: A magnetic field induced Stoner transition|B. A. Piot,D. K. Maude,M. Henini,Z. R. Wasilewski,K. J. Friedland,R. Hey,K. H. Ploog,A. I. Toropov,R. Airey,G. Hill###
(911746, 911746)
 Spin splitting in the integer quantum Hall effect is investigated for aseries of Alx<missing VAR>Ga1-xAs/GaAs heterojunctions and quantum wells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga1-xAs/GaAs
###The quantum Hall ferromagnet at high filling factors: A magnetic field induced Stoner transition|B. A. Piot,D. K. Maude,M. Henini,Z. R. Wasilewski,K. J. Friedland,R. Hey,K. H. Ploog,A. I. Toropov,R. Airey,G. Hill###
(911748, 911755)
 Spin splitting in the integer quantum Hall effect is investigated for aseries of Alx<missing VAR>Ga1-xAs/GaAs heterojunctions and quantum wells.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

In
###From zero resistance states to absolute negative conductivity in microwave irradiated 2D electron systems|J. Inarrea,G. Platero###
(912101, 912101)
 In other words, the current can evolve from flowing with nodissipation, to flow in the opposite direction of the dc bias applied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 2, 'D', 2],[56.0, 2, 'D', 1]

Nd7Rh3
###Field-induced first-order magnetic phase transition in an intermetallic compound, Nd7Rh3: Evidence for kinetic-hindrance, phase co-existence and percolative conduction|Kausik Sengupta,E. V. Sampathkumaran###
(912389, 912392)
Field-induced first-order magnetic phase transition in an intermetallic compound, Nd7Rh3 Evidence for kinetic-hindrance, phase co-existence and percolative conduction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 32, 'K', 1],[82.0, 10, 'K', 1]

Nd7Rh3
###Field-induced first-order magnetic phase transition in an intermetallic compound, Nd7Rh3: Evidence for kinetic-hindrance, phase co-existence and percolative conduction|Kausik Sengupta,E. V. Sampathkumaran###
(912421, 912424)
 The compound, Nd7Rh3, crystallizing in Th7Fe3-type hexagonal structure, waspreviously known to exhibit two magnetic transitions, one at 32 K and the otherat 10 K (in zero magnetic field).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 32, 'K', 0],[50.0, 10, 'K', 0]

Th7Fe3
###Field-induced first-order magnetic phase transition in an intermetallic compound, Nd7Rh3: Evidence for kinetic-hindrance, phase co-existence and percolative conduction|Kausik Sengupta,E. V. Sampathkumaran###
(912431, 912434)
 The compound, Nd7Rh3, crystallizing in Th7Fe3-type hexagonal structure, waspreviously known to exhibit two magnetic transitions, one at 32 K and the otherat 10 K (in zero magnetic field).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 32, 'K', 0],[40.0, 10, 'K', 0]

K
###Field-induced first-order magnetic phase transition in an intermetallic compound, Nd7Rh3: Evidence for kinetic-hindrance, phase co-existence and percolative conduction|Kausik Sengupta,E. V. Sampathkumaran###
(912524, 912524)
 Here, we report the existence of afield-induced first-order antiferromagnetic to ferromagnetic transition at 1.8K in this compound.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 32, 'K', 1],[50.0, 10, 'K', 1]

CoPt
###Prospect for room temperature tunneling anisotropic magnetoresistance effect: density of states anisotropies in CoPt systems|A. B. Shick,F. Maca,J. Masek,T. Jungwirth###
(912735, 912736)
Prospect for room temperature tunneling anisotropic magnetoresistance effect density of states anisotropies in CoPt systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###Prospect for room temperature tunneling anisotropic magnetoresistance effect: density of states anisotropies in CoPt systems|A. B. Shick,F. Maca,J. Masek,T. Jungwirth###
(912765, 912765)
 Tunneling anisotropic magnetoresistance (TAMR) effect, discovered recently in(Ga,Mn)As ferromagnetic semiconductors, arises from spin-orbit coupling andreflects the dependence of the tunneling density of states in a ferromagneticlayer on orientation of the magnetic moment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Prospect for room temperature tunneling anisotropic magnetoresistance effect: density of states anisotropies in CoPt systems|A. B. Shick,F. Maca,J. Masek,T. Jungwirth###
(912767, 912767)
 Tunneling anisotropic magnetoresistance (TAMR) effect, discovered recently in(Ga,Mn)As ferromagnetic semiconductors, arises from spin-orbit coupling andreflects the dependence of the tunneling density of states in a ferromagneticlayer on orientation of the magnetic moment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Prospect for room temperature tunneling anisotropic magnetoresistance effect: density of states anisotropies in CoPt systems|A. B. Shick,F. Maca,J. Masek,T. Jungwirth###
(912769, 912769)
 Tunneling anisotropic magnetoresistance (TAMR) effect, discovered recently in(Ga,Mn)As ferromagnetic semiconductors, arises from spin-orbit coupling andreflects the dependence of the tunneling density of states in a ferromagneticlayer on orientation of the magnetic moment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Prospect for room temperature tunneling anisotropic magnetoresistance effect: density of states anisotropies in CoPt systems|A. B. Shick,F. Maca,J. Masek,T. Jungwirth###
(912959, 912959)
We focus on several model systems ranging from simple hcp-Co to more complexferromagnetic structures with enhanced spin-orbit coupling, namely bulk andthin film L<missing VAR>10-CoPt ordered alloys and a monatomic-Co chain at a Pt surfacestep edge.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoPt
###Prospect for room temperature tunneling anisotropic magnetoresistance effect: density of states anisotropies in CoPt systems|A. B. Shick,F. Maca,J. Masek,T. Jungwirth###
(912998, 912999)
We focus on several model systems ranging from simple hcp-Co to more complexferromagnetic structures with enhanced spin-orbit coupling, namely bulk andthin film L<missing VAR>10-CoPt ordered alloys and a monatomic-Co chain at a Pt surfacestep edge.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Prospect for room temperature tunneling anisotropic magnetoresistance effect: density of states anisotropies in CoPt systems|A. B. Shick,F. Maca,J. Masek,T. Jungwirth###
(913011, 913011)
We focus on several model systems ranging from simple hcp-Co to more complexferromagnetic structures with enhanced spin-orbit coupling, namely bulk andthin film L<missing VAR>10-CoPt ordered alloys and a monatomic-Co chain at a Pt surfacestep edge.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Prospect for room temperature tunneling anisotropic magnetoresistance effect: density of states anisotropies in CoPt systems|A. B. Shick,F. Maca,J. Masek,T. Jungwirth###
(913019, 913019)
We focus on several model systems ranging from simple hcp-Co to more complexferromagnetic structures with enhanced spin-orbit coupling, namely bulk andthin film L<missing VAR>10-CoPt ordered alloys and a monatomic-Co chain at a Pt surfacestep edge.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr3Fe2-x
###Enhancement of giant magnetoresistance effect in the Ruddlesden-Popper phase Sr3Fe2-xCoxO7-d: Predominant role of oxygen nonstoichiometry and magnetic phase separation|T. Motohashi,B. Raveau,M. Hervieu,A. Maignan,V. Pralong,N. Nguyen,V. Caignaert###
(913114, 913119)
Enhancement of giant magnetoresistance effect in the Ruddlesden-Popper phase Sr3Fe2-xCoxO7-d Predominant role of oxygen nonstoichiometry and magnetic phase separation.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[110.0, 80, '%', 2],[115.0, 7, 'T', 2],[118.0, 5, 'K', 2]

O7-d
###Enhancement of giant magnetoresistance effect in the Ruddlesden-Popper phase Sr3Fe2-xCoxO7-d: Predominant role of oxygen nonstoichiometry and magnetic phase separation|T. Motohashi,B. Raveau,M. Hervieu,A. Maignan,V. Pralong,N. Nguyen,V. Caignaert###
(913121, 913124)
Enhancement of giant magnetoresistance effect in the Ruddlesden-Popper phase Sr3Fe2-xCoxO7-d Predominant role of oxygen nonstoichiometry and magnetic phase separation.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[105.0, 80, '%', 2],[110.0, 7, 'T', 2],[113.0, 5, 'K', 2]

Sr3Fe2-x
###Enhancement of giant magnetoresistance effect in the Ruddlesden-Popper phase Sr3Fe2-xCoxO7-d: Predominant role of oxygen nonstoichiometry and magnetic phase separation|T. Motohashi,B. Raveau,M. Hervieu,A. Maignan,V. Pralong,N. Nguyen,V. Caignaert###
(913159, 913164)
 The magnetic and magnetotransport properties of the Sr3Fe2-xCoxO7-d system(0.2 < x<missing VAR> < 1.0) were systematically investigated.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[65.0, 80, '%', 1],[70.0, 7, 'T', 1],[73.0, 5, 'K', 1]

O7-d
###Enhancement of giant magnetoresistance effect in the Ruddlesden-Popper phase Sr3Fe2-xCoxO7-d: Predominant role of oxygen nonstoichiometry and magnetic phase separation|T. Motohashi,B. Raveau,M. Hervieu,A. Maignan,V. Pralong,N. Nguyen,V. Caignaert###
(913166, 913169)
 The magnetic and magnetotransport properties of the Sr3Fe2-xCoxO7-d system(0.2 < x<missing VAR> < 1.0) were systematically investigated.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[60.0, 80, '%', 1],[65.0, 7, 'T', 1],[68.0, 5, 'K', 1]

Ac
###Enhancement of giant magnetoresistance effect in the Ruddlesden-Popper phase Sr3Fe2-xCoxO7-d: Predominant role of oxygen nonstoichiometry and magnetic phase separation|T. Motohashi,B. Raveau,M. Hervieu,A. Maignan,V. Pralong,N. Nguyen,V. Caignaert###
(913240, 913240)
 Ac-susceptibility measurements show that there exists a strongcompetition between ferromagnetic (F) and spin glass states, and the balancebetween these two magnetic states can be controlled by varying cobalt (x)and/or oxygen contents (d).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 80, '%', 1],[6.0, 7, 'T', 1],[3.0, 5, 'K', 1]

(F)
###Enhancement of giant magnetoresistance effect in the Ruddlesden-Popper phase Sr3Fe2-xCoxO7-d: Predominant role of oxygen nonstoichiometry and magnetic phase separation|T. Motohashi,B. Raveau,M. Hervieu,A. Maignan,V. Pralong,N. Nguyen,V. Caignaert###
(913265, 913267)
 Ac-susceptibility measurements show that there exists a strongcompetition between ferromagnetic (F) and spin glass states, and the balancebetween these two magnetic states can be controlled by varying cobalt (x)and/or oxygen contents (d).
Featurization successful!
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 80, '%', 1],[31.0, 7, 'T', 1],[28.0, 5, 'K', 1]

F
###Enhancement of giant magnetoresistance effect in the Ruddlesden-Popper phase Sr3Fe2-xCoxO7-d: Predominant role of oxygen nonstoichiometry and magnetic phase separation|T. Motohashi,B. Raveau,M. Hervieu,A. Maignan,V. Pralong,N. Nguyen,V. Caignaert###
(913396, 913396)
 It is suggested that the compoundsegregates into F clusters embedded in a non-F matrix, being a naturallyoccurring analog of the artificial granular-GMR materials, as in the dopedperovskite cobaltites, La1-xSrxCoO3 (x<missing VAR> < 0.18).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 80, '%', 3],[162.0, 7, 'T', 3],[159.0, 5, 'K', 3]

F
###Enhancement of giant magnetoresistance effect in the Ruddlesden-Popper phase Sr3Fe2-xCoxO7-d: Predominant role of oxygen nonstoichiometry and magnetic phase separation|T. Motohashi,B. Raveau,M. Hervieu,A. Maignan,V. Pralong,N. Nguyen,V. Caignaert###
(913408, 913408)
 It is suggested that the compoundsegregates into F clusters embedded in a non-F matrix, being a naturallyoccurring analog of the artificial granular-GMR materials, as in the dopedperovskite cobaltites, La1-xSrxCoO3 (x<missing VAR> < 0.18).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 80, '%', 3],[174.0, 7, 'T', 3],[171.0, 5, 'K', 3]

La1-x
###Enhancement of giant magnetoresistance effect in the Ruddlesden-Popper phase Sr3Fe2-xCoxO7-d: Predominant role of oxygen nonstoichiometry and magnetic phase separation|T. Motohashi,B. Raveau,M. Hervieu,A. Maignan,V. Pralong,N. Nguyen,V. Caignaert###
(913453, 913456)
 It is suggested that the compoundsegregates into F clusters embedded in a non-F matrix, being a naturallyoccurring analog of the artificial granular-GMR materials, as in the dopedperovskite cobaltites, La1-xSrxCoO3 (x<missing VAR> < 0.18).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[224.0, 80, '%', 3],[219.0, 7, 'T', 3],[216.0, 5, 'K', 3]

CoO3
###Enhancement of giant magnetoresistance effect in the Ruddlesden-Popper phase Sr3Fe2-xCoxO7-d: Predominant role of oxygen nonstoichiometry and magnetic phase separation|T. Motohashi,B. Raveau,M. Hervieu,A. Maignan,V. Pralong,N. Nguyen,V. Caignaert###
(913458, 913460)
 It is suggested that the compoundsegregates into F clusters embedded in a non-F matrix, being a naturallyoccurring analog of the artificial granular-GMR materials, as in the dopedperovskite cobaltites, La1-xSrxCoO3 (x<missing VAR> < 0.18).
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[229.0, 80, '%', 3],[224.0, 7, 'T', 3],[221.0, 5, 'K', 3]

Sr4Ru3O10
###Borderline magnetism in Sr4Ru3O10: Impact of dilute La and Ca doping on itinerant ferromagnetism and metamagnetism|S. Chikara,V. Durairaj,W. H. Song,Y. P. Sun,X. N. Lin,A. Douglass,G. Cao,P. Schlottmann###
(913485, 913490)
Borderline magnetism in Sr4Ru3O10 Impact of dilute La and Ca doping on itinerant ferromagnetism and metamagnetism.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5882352941176471,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23529411764705882,0,0,0,0,0,0.17647058823529413,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La
###Borderline magnetism in Sr4Ru3O10: Impact of dilute La and Ca doping on itinerant ferromagnetism and metamagnetism|S. Chikara,V. Durairaj,W. H. Song,Y. P. Sun,X. N. Lin,A. Douglass,G. Cao,P. Schlottmann###
(913498, 913498)
Borderline magnetism in Sr4Ru3O10 Impact of dilute La and Ca doping on itinerant ferromagnetism and metamagnetism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ca
###Borderline magnetism in Sr4Ru3O10: Impact of dilute La and Ca doping on itinerant ferromagnetism and metamagnetism|S. Chikara,V. Durairaj,W. H. Song,Y. P. Sun,X. N. Lin,A. Douglass,G. Cao,P. Schlottmann###
(913502, 913502)
Borderline magnetism in Sr4Ru3O10 Impact of dilute La and Ca doping on itinerant ferromagnetism and metamagnetism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La
###Borderline magnetism in Sr4Ru3O10: Impact of dilute La and Ca doping on itinerant ferromagnetism and metamagnetism|S. Chikara,V. Durairaj,W. H. Song,Y. P. Sun,X. N. Lin,A. Douglass,G. Cao,P. Schlottmann###
(913523, 913523)
 An investigation of La and Ca doped Sr4Ru3O10, featuring a coexistence ofinterlayer ferromagnetism and intralayer metamagnetism, is presented.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ca
###Borderline magnetism in Sr4Ru3O10: Impact of dilute La and Ca doping on itinerant ferromagnetism and metamagnetism|S. Chikara,V. Durairaj,W. H. Song,Y. P. Sun,X. N. Lin,A. Douglass,G. Cao,P. Schlottmann###
(913527, 913527)
 An investigation of La and Ca doped Sr4Ru3O10, featuring a coexistence ofinterlayer ferromagnetism and intralayer metamagnetism, is presented.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr4Ru3O10
###Borderline magnetism in Sr4Ru3O10: Impact of dilute La and Ca doping on itinerant ferromagnetism and metamagnetism|S. Chikara,V. Durairaj,W. H. Song,Y. P. Sun,X. N. Lin,A. Douglass,G. Cao,P. Schlottmann###
(913531, 913536)
 An investigation of La and Ca doped Sr4Ru3O10, featuring a coexistence ofinterlayer ferromagnetism and intralayer metamagnetism, is presented.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5882352941176471,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23529411764705882,0,0,0,0,0,0.17647058823529413,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La
###Borderline magnetism in Sr4Ru3O10: Impact of dilute La and Ca doping on itinerant ferromagnetism and metamagnetism|S. Chikara,V. Durairaj,W. H. Song,Y. P. Sun,X. N. Lin,A. Douglass,G. Cao,P. Schlottmann###
(913564, 913564)
 La dopingreadily changes magnetism between ferromagnetism and metamagnetism by tuningthe density of states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Borderline magnetism in Sr4Ru3O10: Impact of dilute La and Ca doping on itinerant ferromagnetism and metamagnetism|S. Chikara,V. Durairaj,W. H. Song,Y. P. Sun,X. N. Lin,A. Douglass,G. Cao,P. Schlottmann###
(913653, 913653)
 In contrast, Ca doping enhances the c<missing VAR>-axis ferromagnetismand the magnetic anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ca
###Borderline magnetism in Sr4Ru3O10: Impact of dilute La and Ca doping on itinerant ferromagnetism and metamagnetism|S. Chikara,V. Durairaj,W. H. Song,Y. P. Sun,X. N. Lin,A. Douglass,G. Cao,P. Schlottmann###
(913658, 913658)
 In contrast, Ca doping enhances the c<missing VAR>-axis ferromagnetismand the magnetic anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La
###Borderline magnetism in Sr4Ru3O10: Impact of dilute La and Ca doping on itinerant ferromagnetism and metamagnetism|S. Chikara,V. Durairaj,W. H. Song,Y. P. Sun,X. N. Lin,A. Douglass,G. Cao,P. Schlottmann###
(913682, 913682)
 La doping also induces a dimensional crossover inthe interlayer transport whereas Ca doping exhibits a tunnelingmagnetoresistance and an extraordinary T<missing VAR>3/2-dependence of the resisitivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ca
###Borderline magnetism in Sr4Ru3O10: Impact of dilute La and Ca doping on itinerant ferromagnetism and metamagnetism|S. Chikara,V. Durairaj,W. H. Song,Y. P. Sun,X. N. Lin,A. Douglass,G. Cao,P. Schlottmann###
(913707, 913707)
 La doping also induces a dimensional crossover inthe interlayer transport whereas Ca doping exhibits a tunnelingmagnetoresistance and an extraordinary T<missing VAR>3/2-dependence of the resisitivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La2CuO4
###Crystal structure and high-field magnetism of La2CuO4|M. Reehuis,C. Ulrich,K. Prokes,A. Gozar,G. Blumberg,Seiki Komiya,Yoichi Ando,P. Pattison,B. Keimer###
(913824, 913828)
Crystal structure and high-field magnetism of La2CuO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La2CuO4
###Crystal structure and high-field magnetism of La2CuO4|M. Reehuis,C. Ulrich,K. Prokes,A. Gozar,G. Blumberg,Seiki Komiya,Yoichi Ando,P. Pattison,B. Keimer###
(913862, 913866)
 Neutron diffraction was used to determine the crystal structure and magneticordering pattern of a La2CuO4 single crystal, with and without applied magneticfield.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr
###Crystal structure and high-field magnetism of La2CuO4|M. Reehuis,C. Ulrich,K. Prokes,A. Gozar,G. Blumberg,Seiki Komiya,Yoichi Ando,P. Pattison,B. Keimer###
(913943, 913943)
 Thedistortion is also present in lightly Sr-doped crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La2CuO4
###Crystal structure and high-field magnetism of La2CuO4|M. Reehuis,C. Ulrich,K. Prokes,A. Gozar,G. Blumberg,Seiki Komiya,Yoichi Ando,P. Pattison,B. Keimer###
(914110, 914114)
A spin-flop transition induced by a c<missing VAR>-axis oriented field previously reportedfor non-stoichiometric La2CuO4 is also observed, but the transition field (11.5T) is significantly larger than that in the previous work.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnFe2O4
###Positive and negative magnetocapacitance in magnetic nanoparticle systems|G. Lawes,R. Tackett,O. Masala,B. Adhikary,R. Naik,R. Seshadri###
(914190, 914194)
 The dielectric properties of MnFe2O4 and gamma-Fe2O3 magneticnanoparticles embedded in insulating matrices were investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 0.4, '%', 1],[86.0, 10, 'kOe', 1]

Fe2O3
###Positive and negative magnetocapacitance in magnetic nanoparticle systems|G. Lawes,R. Tackett,O. Masala,B. Adhikary,R. Naik,R. Seshadri###
(914200, 914203)
 The dielectric properties of MnFe2O4 and gamma-Fe2O3 magneticnanoparticles embedded in insulating matrices were investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 0.4, '%', 1],[77.0, 10, 'kOe', 1]

H
###Positive and negative magnetocapacitance in magnetic nanoparticle systems|G. Lawes,R. Tackett,O. Masala,B. Adhikary,R. Naik,R. Seshadri###
(914278, 914278)
 The samplesshowed frequency dependent dielectric anomalies coincident with the magneticblocking temperature and significant magnetocapacitance above this blockingtemperature, as large as 0.4% at H  10kOe.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 0.4, '%', 0],[2.0, 10, 'kOe', 0]

As
###Positive and negative magnetocapacitance in magnetic nanoparticle systems|G. Lawes,R. Tackett,O. Masala,B. Adhikary,R. Naik,R. Seshadri###
(914373, 914373)
 As neither bulk gamma-Fe2O3 nor MnFe2O3 aremagnetoelectric materials, this magnetodielectric coupling is believed to arisefrom extrinsic effects which are discussed in light of recent work relatingmagnetoresistive and magnetocapacitive behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 0.4, '%', 3],[93.0, 10, 'kOe', 3]

Fe2O3
###Positive and negative magnetocapacitance in magnetic nanoparticle systems|G. Lawes,R. Tackett,O. Masala,B. Adhikary,R. Naik,R. Seshadri###
(914381, 914384)
 As neither bulk gamma-Fe2O3 nor MnFe2O3 aremagnetoelectric materials, this magnetodielectric coupling is believed to arisefrom extrinsic effects which are discussed in light of recent work relatingmagnetoresistive and magnetocapacitive behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 0.4, '%', 3],[101.0, 10, 'kOe', 3]

MnFe2O3
###Positive and negative magnetocapacitance in magnetic nanoparticle systems|G. Lawes,R. Tackett,O. Masala,B. Adhikary,R. Naik,R. Seshadri###
(914388, 914392)
 As neither bulk gamma-Fe2O3 nor MnFe2O3 aremagnetoelectric materials, this magnetodielectric coupling is believed to arisefrom extrinsic effects which are discussed in light of recent work relatingmagnetoresistive and magnetocapacitive behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 0.4, '%', 3],[108.0, 10, 'kOe', 3]

In
###Non-collinear Magnetoelectronics|Arne Brataas,Gerrit E. W. Bauer,Paul J. Kelly###
(914670, 914670)
 In conjunction with first-principles calculations ofscattering matrices many phenomena, e.g.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co/Cu/Co
###Spin-transfer in bilayer magnetic nanopillars at high fields as a function of free layer thickness|W. Chen,A. D. Kent,M. J. Rooks,N. Ruiz,J. Z. Sun###
(914784, 914788)
 Spin transfer in asymmetric Co/Cu/Co bilayer magnetic nanopillars junctionshas been studied at low temperature as a function of free-layer thickness.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[71.0, 7.5, 'T', 1],[95.0, 2, 'to', 1],[96.0, 5, 'nm', 1]

Mn
###The effects of Mn concentration on spin-polarized transport through ZnSe/ZnMnSe/ZnSe heterostructures|Alireza Saffarzadeh###
(915422, 915422)
The effects of Mn concentration on spin-polarized transport through ZnSe/ZnMnSe/ZnSe heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[269.0, 100, '%', 4]

ZnSe/ZnMnSe/ZnSe
###The effects of Mn concentration on spin-polarized transport through ZnSe/ZnMnSe/ZnSe heterostructures|Alireza Saffarzadeh###
(915436, 915444)
The effects of Mn concentration on spin-polarized transport through ZnSe/ZnMnSe/ZnSe heterostructures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[247.0, 100, '%', 4]

Mn
###The effects of Mn concentration on spin-polarized transport through ZnSe/ZnMnSe/ZnSe heterostructures|Alireza Saffarzadeh###
(915461, 915461)
 We have studied the effects of Mn concentration on the ballisticspin-polarized transport through diluted magnetic semiconductorheterostructures with a single paramagnetic layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[230.0, 100, '%', 3]

Mn
###The effects of Mn concentration on spin-polarized transport through ZnSe/ZnMnSe/ZnSe heterostructures|Alireza Saffarzadeh###
(915555, 915555)
 Using a fitted function forzero-field conduction band offset based on the experimental data, we found thatthe spin current densities strongly depend on the Mn concentration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 100, '%', 2]

Mn
###The effects of Mn concentration on spin-polarized transport through ZnSe/ZnMnSe/ZnSe heterostructures|Alireza Saffarzadeh###
(915606, 915606)
 Themagnitude as well as the sign of the electron-spin polarization and the tunnelmagnetoresistance can be tuned by varying the Mn concentration, the width ofthe paramagnetic layer, and the external magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 100, '%', 1]

Mn
###The effects of Mn concentration on spin-polarized transport through ZnSe/ZnMnSe/ZnSe heterostructures|Alireza Saffarzadeh###
(915649, 915649)
 By an appropriatechoice of the Mn concentration and the width of the paramagnetic layer, thedegree of spin polarization for the output current can reach 100% and thedevice can be used as a spin filter.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 100, '%', 0]

La2
###Large magnetoresistance in La2/3Ca1/3MnO3 thin films induced by metal masked ion damage technique|M. J. Zhang,J. Li,Z. H. Peng,D. N. Zheng,A. Z. Jin,C. Z. Gu###
(915730, 915731)
Large magnetoresistance in La2/3Ca1/3MnO3 thin films induced by metal masked ion damage technique.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 120, 'keV', 1],[105.0, 70, 'nm', 2],[117.0, 30, 'kV', 2],[132.0, 4, 'mm', 2],[185.0, 5, 'T', 3],[199.0, 60, '%', 3],[205.0, 230, 'K', 3],[222.0, 95, '%', 3],[229.0, 70, 'K', 3]

Ca1
###Large magnetoresistance in La2/3Ca1/3MnO3 thin films induced by metal masked ion damage technique|M. J. Zhang,J. Li,Z. H. Peng,D. N. Zheng,A. Z. Jin,C. Z. Gu###
(915734, 915735)
Large magnetoresistance in La2/3Ca1/3MnO3 thin films induced by metal masked ion damage technique.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 120, 'keV', 1],[101.0, 70, 'nm', 2],[113.0, 30, 'kV', 2],[128.0, 4, 'mm', 2],[181.0, 5, 'T', 3],[195.0, 60, '%', 3],[201.0, 230, 'K', 3],[218.0, 95, '%', 3],[225.0, 70, 'K', 3]

MnO3
###Large magnetoresistance in La2/3Ca1/3MnO3 thin films induced by metal masked ion damage technique|M. J. Zhang,J. Li,Z. H. Peng,D. N. Zheng,A. Z. Jin,C. Z. Gu###
(915738, 915740)
Large magnetoresistance in La2/3Ca1/3MnO3 thin films induced by metal masked ion damage technique.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 120, 'keV', 1],[96.0, 70, 'nm', 2],[108.0, 30, 'kV', 2],[123.0, 4, 'mm', 2],[176.0, 5, 'T', 3],[190.0, 60, '%', 3],[196.0, 230, 'K', 3],[213.0, 95, '%', 3],[220.0, 70, 'K', 3]

(FIB)
###Large magnetoresistance in La2/3Ca1/3MnO3 thin films induced by metal masked ion damage technique|M. J. Zhang,J. Li,Z. H. Peng,D. N. Zheng,A. Z. Jin,C. Z. Gu###
(915811, 915815)
 e<missing VAR> have developed a simple process to obtain large magnetoresistance (MR) inperovskite manganite thin films by a combination of focused ion beam (FIB)milling and 120 keV H2 ion implantation.
Featurization successful!
0,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 120, 'keV', 0],[21.0, 70, 'nm', 1],[33.0, 30, 'kV', 1],[48.0, 4, 'mm', 1],[101.0, 5, 'T', 2],[115.0, 60, '%', 2],[121.0, 230, 'K', 2],[138.0, 95, '%', 2],[145.0, 70, 'K', 2]

H2
###Large magnetoresistance in La2/3Ca1/3MnO3 thin films induced by metal masked ion damage technique|M. J. Zhang,J. Li,Z. H. Peng,D. N. Zheng,A. Z. Jin,C. Z. Gu###
(915823, 915824)
 e<missing VAR> have developed a simple process to obtain large magnetoresistance (MR) inperovskite manganite thin films by a combination of focused ion beam (FIB)milling and 120 keV H2 ion implantation.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 120, 'keV', 0],[12.0, 70, 'nm', 1],[24.0, 30, 'kV', 1],[39.0, 4, 'mm', 1],[92.0, 5, 'T', 2],[106.0, 60, '%', 2],[112.0, 230, 'K', 2],[129.0, 95, '%', 2],[136.0, 70, 'K', 2]

Ga
###Large magnetoresistance in La2/3Ca1/3MnO3 thin films induced by metal masked ion damage technique|M. J. Zhang,J. Li,Z. H. Peng,D. N. Zheng,A. Z. Jin,C. Z. Gu###
(915852, 915852)
 Metal slits about 70 nm inwidth were printed by 30 kV focused Ga ion beam nanolithography on a 4 mmtrack, and the materials in these slits are then irradiated by the acceleratedH2 ions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 120, 'keV', 1],[16.0, 70, 'nm', 0],[4.0, 30, 'kV', 0],[11.0, 4, 'mm', 0],[64.0, 5, 'T', 1],[78.0, 60, '%', 1],[84.0, 230, 'K', 1],[101.0, 95, '%', 1],[108.0, 70, 'K', 1]

H2
###Large magnetoresistance in La2/3Ca1/3MnO3 thin films induced by metal masked ion damage technique|M. J. Zhang,J. Li,Z. H. Peng,D. N. Zheng,A. Z. Jin,C. Z. Gu###
(915894, 915895)
 Metal slits about 70 nm inwidth were printed by 30 kV focused Ga ion beam nanolithography on a 4 mmtrack, and the materials in these slits are then irradiated by the acceleratedH2 ions.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 120, 'keV', 1],[58.0, 70, 'nm', 0],[46.0, 30, 'kV', 0],[31.0, 4, 'mm', 0],[21.0, 5, 'T', 1],[35.0, 60, '%', 1],[41.0, 230, 'K', 1],[58.0, 95, '%', 1],[65.0, 70, 'K', 1]

F
###Dynamical Mean-Field Study of the Ferromagnetic Transition Temperature of a Two-Band Model for Colossal Magnetoresistance Materials|F. Popescu,C. Sen,E. Dagotto###
(916057, 916057)
 The ferromagnetic (FM) transition temperature (Tc) of a two-bandDouble-Exchange (DE) model for colossal magnetoresistance (CMR) materials isstudied using dynamical mean-field theory (DMFT), in wide ranges of couplingconstants, hopping parameters, and carrier densities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(Tc)
###Dynamical Mean-Field Study of the Ferromagnetic Transition Temperature of a Two-Band Model for Colossal Magnetoresistance Materials|F. Popescu,C. Sen,E. Dagotto###
(916065, 916067)
 The ferromagnetic (FM) transition temperature (Tc) of a two-bandDouble-Exchange (DE) model for colossal magnetoresistance (CMR) materials isstudied using dynamical mean-field theory (DMFT), in wide ranges of couplingconstants, hopping parameters, and carrier densities.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Dynamical Mean-Field Study of the Ferromagnetic Transition Temperature of a Two-Band Model for Colossal Magnetoresistance Materials|F. Popescu,C. Sen,E. Dagotto###
(916096, 916096)
 The ferromagnetic (FM) transition temperature (Tc) of a two-bandDouble-Exchange (DE) model for colossal magnetoresistance (CMR) materials isstudied using dynamical mean-field theory (DMFT), in wide ranges of couplingconstants, hopping parameters, and carrier densities.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Dynamical Mean-Field Study of the Ferromagnetic Transition Temperature of a Two-Band Model for Colossal Magnetoresistance Materials|F. Popescu,C. Sen,E. Dagotto###
(916121, 916121)
 The ferromagnetic (FM) transition temperature (Tc) of a two-bandDouble-Exchange (DE) model for colossal magnetoresistance (CMR) materials isstudied using dynamical mean-field theory (DMFT), in wide ranges of couplingconstants, hopping parameters, and carrier densities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###Dynamical Mean-Field Study of the Ferromagnetic Transition Temperature of a Two-Band Model for Colossal Magnetoresistance Materials|F. Popescu,C. Sen,E. Dagotto###
(916196, 916196)
 When the bands overlap,the value of Tc is found to be much larger than in the one-band case, for allvalues of the chemical potential within the energy overlap interval.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###Dynamical Mean-Field Study of the Ferromagnetic Transition Temperature of a Two-Band Model for Colossal Magnetoresistance Materials|F. Popescu,C. Sen,E. Dagotto###
(916270, 916270)
 A nonzerointerband hopping produces an additional substantial increase of Tc, showingthe importance of these nondiagonal terms, and the concomitant use of multibandmodels, to boost up the critical temperatures in DE-based theories.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Y0.54Pr0.46Ba2Cu3O7
###High Temperature Mixed State $c-$Axis Dissipation in Low Carrier Density $Y_{0.54}Pr_{0.46}Ba_{2}Cu_{3}O_{7-δ}$|T. Katuwal,V. Sandu,B. J. Taylor,M. B. Maple,C. C. Almasan###
(916357, 916366)
High Temperature Mixed State c<missing VAR>-Axis Dissipation in Low Carrier Density Y0.54Pr0.46Ba2Cu3O7-.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5384615384615384,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23076923076923078,0,0,0,0,0,0,0,0,0,0.04153846153846154,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15384615384615385,0,0,0.03538461538461539,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 22, ',', 9]

Y0.54Pr0.46Ba2Cu3O7
###High Temperature Mixed State $c-$Axis Dissipation in Low Carrier Density $Y_{0.54}Pr_{0.46}Ba_{2}Cu_{3}O_{7-δ}$|T. Katuwal,V. Sandu,B. J. Taylor,M. B. Maple,C. C. Almasan###
(916395, 916404)
 The nature of the out-of-plane dissipation was investigated in underdopedY0.54Pr0.46Ba2Cu3O7-delta single crystals at temperaturesclose to the critical temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5384615384615384,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23076923076923078,0,0,0,0,0,0,0,0,0,0.04153846153846154,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15384615384615385,0,0,0.03538461538461539,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 22, ',', 8]

V
###High Temperature Mixed State $c-$Axis Dissipation in Low Carrier Density $Y_{0.54}Pr_{0.46}Ba_{2}Cu_{3}O_{7-δ}$|T. Katuwal,V. Sandu,B. J. Taylor,M. B. Maple,C. C. Almasan###
(916492, 916492)
 We found that the Ambegaokar-Halperinrelationship [V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 22, ',', 6]

B
###High Temperature Mixed State $c-$Axis Dissipation in Low Carrier Density $Y_{0.54}Pr_{0.46}Ba_{2}Cu_{3}O_{7-δ}$|T. Katuwal,V. Sandu,B. J. Taylor,M. B. Maple,C. C. Almasan###
(916500, 916500)
 Ambegaokar, and B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 22, ',', 5]

I
###High Temperature Mixed State $c-$Axis Dissipation in Low Carrier Density $Y_{0.54}Pr_{0.46}Ba_{2}Cu_{3}O_{7-δ}$|T. Katuwal,V. Sandu,B. J. Taylor,M. B. Maple,C. C. Almasan###
(916503, 916503)
 I.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 22, ',', 4]

BCS
###High Temperature Mixed State $c-$Axis Dissipation in Low Carrier Density $Y_{0.54}Pr_{0.46}Ba_{2}Cu_{3}O_{7-δ}$|T. Katuwal,V. Sandu,B. J. Taylor,M. B. Maple,C. C. Almasan###
(916717, 916719)
 This discrepancy could be a result of the d<missing VAR>-wave symmetry ofthe order parameter and/or of the non BCS temperature dependence of the c<missing VAR>-axispenetration length.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[198.0, 22, ',', 3]

Co2Cr
###Structural and magneto-transport characterization of Co_2Cr_xFe_(1-x)Al Heusler alloy films|A. D. Rata,H. Braak,D. E. Buergler,S. Cramm,C. M. Schneider###
(916759, 916761)
Structural and magneto-transport characterization of Co2Crx<missing VAR>Fe(1-x)Al Heusler alloy films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[201.0, 630, 'K', 3],[288.0, 37, '%', 5]

Fe(1-x)Al
###Structural and magneto-transport characterization of Co_2Cr_xFe_(1-x)Al Heusler alloy films|A. D. Rata,H. Braak,D. E. Buergler,S. Cramm,C. M. Schneider###
(916763, 916769)
Structural and magneto-transport characterization of Co2Crx<missing VAR>Fe(1-x)Al Heusler alloy films.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[193.0, 630, 'K', 3],[280.0, 37, '%', 5]

Co2Cr
###Structural and magneto-transport characterization of Co_2Cr_xFe_(1-x)Al Heusler alloy films|A. D. Rata,H. Braak,D. E. Buergler,S. Cramm,C. M. Schneider###
(916805, 916807)
 We investigate the structure and magneto-transport properties of thin filmsof the Co2Crx<missing VAR>Fe(1-x)Al full-Heusler compound, which is predicted to be ahalf-metal by first-principles theoretical calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 630, 'K', 2],[242.0, 37, '%', 4]

Fe(1-x)Al
###Structural and magneto-transport characterization of Co_2Cr_xFe_(1-x)Al Heusler alloy films|A. D. Rata,H. Braak,D. E. Buergler,S. Cramm,C. M. Schneider###
(916809, 916815)
 We investigate the structure and magneto-transport properties of thin filmsof the Co2Crx<missing VAR>Fe(1-x)Al full-Heusler compound, which is predicted to be ahalf-metal by first-principles theoretical calculations.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[147.0, 630, 'K', 2],[234.0, 37, '%', 4]

Si
###Structural and magneto-transport characterization of Co_2Cr_xFe_(1-x)Al Heusler alloy films|A. D. Rata,H. Braak,D. E. Buergler,S. Cramm,C. M. Schneider###
(916902, 916902)
 Thin films aredeposited by magnetron sputtering at room temperature on various substrates inorder to tune the growth from polycrystalline on thermally oxidized Sisubstrates to highly textured and even epitaxial on MgO(001) substrates,respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 630, 'K', 1],[147.0, 37, '%', 3]

MgO
###Structural and magneto-transport characterization of Co_2Cr_xFe_(1-x)Al Heusler alloy films|A. D. Rata,H. Braak,D. E. Buergler,S. Cramm,C. M. Schneider###
(917028, 917029)
 Polycrystalline Heusler films combinedwith MgO barriers are incorporated into magnetic tunnel junctions and yield 37%magnetoresistance at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 630, 'K', 2],[20.0, 37, '%', 0]

CaC6
###Quasi-2D superconductivity and Fermi-liquid behavior in bulk CaC$_6$|E. Jobiliong,H. D. Zhou,J. A. Janik,Y. -J. Jo,L. Balicas,J. S. Brooks,C. R. Wiebe###
(917384, 917386)
Quasi-2D<missing VAR> superconductivity and Fermi-liquid behavior in bulk CaC6.
Featurization terminated normally.
0,0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 11.5, 'K', 1],[63.0, 50, 'K', 2],[79.0, 50, 'K', 3],[115.0, 263, 'K', 3]

CaC6
###Quasi-2D superconductivity and Fermi-liquid behavior in bulk CaC$_6$|E. Jobiliong,H. D. Zhou,J. A. Janik,Y. -J. Jo,L. Balicas,J. S. Brooks,C. R. Wiebe###
(917397, 917399)
 The intercalated graphite superconductor CaC6 with Tc  11.5 K has beensynthesized and characterized with magnetoresistance measurements.
Featurization terminated normally.
0,0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 11.5, 'K', 0],[50.0, 50, 'K', 1],[66.0, 50, 'K', 2],[102.0, 263, 'K', 2]

Tc
###Quasi-2D superconductivity and Fermi-liquid behavior in bulk CaC$_6$|E. Jobiliong,H. D. Zhou,J. A. Janik,Y. -J. Jo,L. Balicas,J. S. Brooks,C. R. Wiebe###
(917403, 917403)
 The intercalated graphite superconductor CaC6 with Tc  11.5 K has beensynthesized and characterized with magnetoresistance measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 11.5, 'K', 0],[46.0, 50, 'K', 1],[62.0, 50, 'K', 2],[98.0, 263, 'K', 2]

BCS
###Quasi-2D superconductivity and Fermi-liquid behavior in bulk CaC$_6$|E. Jobiliong,H. D. Zhou,J. A. Janik,Y. -J. Jo,L. Balicas,J. S. Brooks,C. R. Wiebe###
(917645, 917647)
 All of these measurementsare consistent with BCS-like superconductivity.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[240.0, 11.5, 'K', 5],[196.0, 50, 'K', 4],[180.0, 50, 'K', 3],[144.0, 263, 'K', 3]

GdPt2
###Influence of Domain Wall on Magnetocaloric Effect in GdPt$_{2}$|Tapas Samanta,I. Das###
(917678, 917680)
Influence of Domain Wall on Magnetocaloric Effect in GdPt2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GdPt2
###Influence of Domain Wall on Magnetocaloric Effect in GdPt$_{2}$|Tapas Samanta,I. Das###
(917709, 917711)
 The resistivity, magnetoresistance and in-field heat capacity measurementswere performed on GdPt2 intermetallic compound.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Influence of Domain Wall on Magnetocaloric Effect in GdPt$_{2}$|Tapas Samanta,I. Das###
(917735, 917735)
 The magnetocaloricparameters Delta T<missing VAR>ad and -Delta S were derived from the in-field heatcapacity data.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Influence of Domain Wall on Magnetocaloric Effect in GdPt$_{2}$|Tapas Samanta,I. Das###
(917777, 917777)
 Comparison has been made between the magnetocaloric effect-Delta S and difference in resistivity -Delta rho (rho(H)-rho(0))as a function of temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(H)
###Influence of Domain Wall on Magnetocaloric Effect in GdPt$_{2}$|Tapas Samanta,I. Das###
(917794, 917796)
 Comparison has been made between the magnetocaloric effect-Delta S and difference in resistivity -Delta rho (rho(H)-rho(0))as a function of temperature.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Influence of Domain Wall on Magnetocaloric Effect in GdPt$_{2}$|Tapas Samanta,I. Das###
(917838, 917838)
 There is distinct difference in the temperaturedependence of -Delta S and -Delta rho below the ferromagnetic transitiontemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Influence of Domain Wall on Magnetocaloric Effect in GdPt$_{2}$|Tapas Samanta,I. Das###
(917891, 917891)
 However after removing the domain wall contribution from -Deltarho, the nature of -Delta S and -Delta rho dependence as a function oftemperature are similar.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr
###Electronic and Magnetic Properties of Sr and Ca Doped Lanthanum Manganites from First-Principles|M. -H. Tsai,Y. -H. Tang,H. Chou,W. T. Wu###
(917989, 917989)
Electronic and Magnetic Properties of Sr and Ca Doped Lanthanum Manganites from First-Principles.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 2, 'p', 2]

Ca
###Electronic and Magnetic Properties of Sr and Ca Doped Lanthanum Manganites from First-Principles|M. -H. Tsai,Y. -H. Tang,H. Chou,W. T. Wu###
(917993, 917993)
Electronic and Magnetic Properties of Sr and Ca Doped Lanthanum Manganites from First-Principles.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 2, 'p', 2]

C
###Electronic and Magnetic Properties of Sr and Ca Doped Lanthanum Manganites from First-Principles|M. -H. Tsai,Y. -H. Tang,H. Chou,W. T. Wu###
(918025, 918025)
 The complicated electronic, magnetic, and colossal magnetoresistant (CMR)properties of Sr and Ca doped lanthanum manganites can be understood byspin-polarized first-principles calculations.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 2, 'p', 1]

Sr
###Electronic and Magnetic Properties of Sr and Ca Doped Lanthanum Manganites from First-Principles|M. -H. Tsai,Y. -H. Tang,H. Chou,W. T. Wu###
(918035, 918035)
 The complicated electronic, magnetic, and colossal magnetoresistant (CMR)properties of Sr and Ca doped lanthanum manganites can be understood byspin-polarized first-principles calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 2, 'p', 1]

Ca
###Electronic and Magnetic Properties of Sr and Ca Doped Lanthanum Manganites from First-Principles|M. -H. Tsai,Y. -H. Tang,H. Chou,W. T. Wu###
(918039, 918039)
 The complicated electronic, magnetic, and colossal magnetoresistant (CMR)properties of Sr and Ca doped lanthanum manganites can be understood byspin-polarized first-principles calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 2, 'p', 1]

Sr
###Electronic and Magnetic Properties of Sr and Ca Doped Lanthanum Manganites from First-Principles|M. -H. Tsai,Y. -H. Tang,H. Chou,W. T. Wu###
(918090, 918090)
 The electronic properties can beattributed to a detailed balancing between Sr and Ca induced metal-like O 2pand majority-spin (majority-spin) Mn eg delocalized states and theinsulator-like minority-spin (minority-spin) Mn t2g band near the Fermi level(E<missing VAR>F).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 2, 'p', 0]

Ca
###Electronic and Magnetic Properties of Sr and Ca Doped Lanthanum Manganites from First-Principles|M. -H. Tsai,Y. -H. Tang,H. Chou,W. T. Wu###
(918094, 918094)
 The electronic properties can beattributed to a detailed balancing between Sr and Ca induced metal-like O 2pand majority-spin (majority-spin) Mn eg delocalized states and theinsulator-like minority-spin (minority-spin) Mn t2g band near the Fermi level(E<missing VAR>F).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 2, 'p', 0]

O
###Electronic and Magnetic Properties of Sr and Ca Doped Lanthanum Manganites from First-Principles|M. -H. Tsai,Y. -H. Tang,H. Chou,W. T. Wu###
(918102, 918102)
 The electronic properties can beattributed to a detailed balancing between Sr and Ca induced metal-like O 2pand majority-spin (majority-spin) Mn eg delocalized states and theinsulator-like minority-spin (minority-spin) Mn t2g band near the Fermi level(E<missing VAR>F).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[1.0, 2, 'p', 0]

Mn
###Electronic and Magnetic Properties of Sr and Ca Doped Lanthanum Manganites from First-Principles|M. -H. Tsai,Y. -H. Tang,H. Chou,W. T. Wu###
(918118, 918118)
 The electronic properties can beattributed to a detailed balancing between Sr and Ca induced metal-like O 2pand majority-spin (majority-spin) Mn eg delocalized states and theinsulator-like minority-spin (minority-spin) Mn t2g band near the Fermi level(E<missing VAR>F).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 2, 'p', 0]

Mn
###Electronic and Magnetic Properties of Sr and Ca Doped Lanthanum Manganites from First-Principles|M. -H. Tsai,Y. -H. Tang,H. Chou,W. T. Wu###
(918145, 918145)
 The electronic properties can beattributed to a detailed balancing between Sr and Ca induced metal-like O 2pand majority-spin (majority-spin) Mn eg delocalized states and theinsulator-like minority-spin (minority-spin) Mn t2g band near the Fermi level(E<missing VAR>F).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 2, 'p', 0]

F
###Electronic and Magnetic Properties of Sr and Ca Doped Lanthanum Manganites from First-Principles|M. -H. Tsai,Y. -H. Tang,H. Chou,W. T. Wu###
(918164, 918164)
 The electronic properties can beattributed to a detailed balancing between Sr and Ca induced metal-like O 2pand majority-spin (majority-spin) Mn eg delocalized states and theinsulator-like minority-spin (minority-spin) Mn t2g band near the Fermi level(E<missing VAR>F).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 2, 'p', 0]

O
###Electronic and Magnetic Properties of Sr and Ca Doped Lanthanum Manganites from First-Principles|M. -H. Tsai,Y. -H. Tang,H. Chou,W. T. Wu###
(918191, 918191)
 The magnetic properties can be attributed to a detailed balancing betweenO mediated antiferromagnetic superexchange and delocalized majority-spin Mneg-state mediated ferromagnetic spin-spin couplings.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 2, 'p', 1]

Mn
###Electronic and Magnetic Properties of Sr and Ca Doped Lanthanum Manganites from First-Principles|M. -H. Tsai,Y. -H. Tang,H. Chou,W. T. Wu###
(918207, 918207)
 The magnetic properties can be attributed to a detailed balancing betweenO mediated antiferromagnetic superexchange and delocalized majority-spin Mneg-state mediated ferromagnetic spin-spin couplings.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 2, 'p', 1]

C
###Electronic and Magnetic Properties of Sr and Ca Doped Lanthanum Manganites from First-Principles|M. -H. Tsai,Y. -H. Tang,H. Chou,W. T. Wu###
(918227, 918227)
 While CMR can beattributed to the lining up of magnetic domains trigged by the applied magneticfield, which suppresses the trapping ability of the empty Mn t2g states thatresists the motion of conducting Mn majority-spin eg electrons.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 2, 'p', 2]

Mn
###Electronic and Magnetic Properties of Sr and Ca Doped Lanthanum Manganites from First-Principles|M. -H. Tsai,Y. -H. Tang,H. Chou,W. T. Wu###
(918282, 918282)
 While CMR can beattributed to the lining up of magnetic domains trigged by the applied magneticfield, which suppresses the trapping ability of the empty Mn t2g states thatresists the motion of conducting Mn majority-spin eg electrons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 2, 'p', 2]

Mn
###Electronic and Magnetic Properties of Sr and Ca Doped Lanthanum Manganites from First-Principles|M. -H. Tsai,Y. -H. Tang,H. Chou,W. T. Wu###
(918303, 918303)
 While CMR can beattributed to the lining up of magnetic domains trigged by the applied magneticfield, which suppresses the trapping ability of the empty Mn t2g states thatresists the motion of conducting Mn majority-spin eg electrons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[200.0, 2, 'p', 2]

Fe/MgO/Fe
###First principles modeling of tunnel magnetoresistance of Fe/MgO/Fe trilayers|Derek Waldron,Vladimir Timoshevskii,Yibin Hu,Ke Xia,Hong Guo###
(918336, 918341)
First principles modeling of tunnel magnetoresistance of Fe/MgO/Fe trilayers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[202.0, 1, 'V', 3]

Fe/MgO/Fe
###First principles modeling of tunnel magnetoresistance of Fe/MgO/Fe trilayers|Derek Waldron,Vladimir Timoshevskii,Yibin Hu,Ke Xia,Hong Guo###
(918404, 918409)
 By carrying out density functional theory analysis within the Keldyshnon-equilibrium Greens<missing VAR> functional formalism, we have calculated the nonlinearand non-equilibrium quantum transport properties of Fe/MgO/Fe trilayerstructures as a function of external bias voltage.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[134.0, 1, 'V', 2]

As
###First principles modeling of tunnel magnetoresistance of Fe/MgO/Fe trilayers|Derek Waldron,Vladimir Timoshevskii,Yibin Hu,Ke Xia,Hong Guo###
(918502, 918502)
 As a function of external bias voltage, the TMRreduces monotonically to zero with a voltage scale of about 1V, in agreementwith experimental observations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 1, 'V', 0]

Fe
###First principles modeling of tunnel magnetoresistance of Fe/MgO/Fe trilayers|Derek Waldron,Vladimir Timoshevskii,Yibin Hu,Ke Xia,Hong Guo###
(918604, 918604)
 We present understanding of the nonequilibriumtransport properties by investigating microscopic details of the scatteringstates and the Bloch bands of the Fe leads.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 1, 'V', 1]

S
###Magnetoresistance of a quantum dot with spin-active interfaces|Audrey Cottet,Mahn-Soo Choi###
(918843, 918843)
 Assuming a twofoldorbital degeneracy, our approach allows to interpret in an interacting picturethe MR(Vg) measured by S.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 2, ',', 3]

Na
###Large enhancement of the thermopower in Na$_x$CoO$_2$ at high Na doping|Minhyea Lee,Liliana Viciu,Lu Li,Yayu Wang,M. L. Foo,S. Watauchi,R. A. Pascal Jr.,R. J. Cava,N. P. Ong###
(919331, 919331)
Large enhancement of the thermopower in Nax<missing VAR>CoO2 at high Na doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[251.0, 0.6, '<', 5],[285.0, 0.75, ',', 6],[314.0, 0.85, ',', 7],[321.0, 80, 'K', 7]

CoO2
###Large enhancement of the thermopower in Na$_x$CoO$_2$ at high Na doping|Minhyea Lee,Liliana Viciu,Lu Li,Yayu Wang,M. L. Foo,S. Watauchi,R. A. Pascal Jr.,R. J. Cava,N. P. Ong###
(919333, 919335)
Large enhancement of the thermopower in Nax<missing VAR>CoO2 at high Na doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[247.0, 0.6, '<', 5],[281.0, 0.75, ',', 6],[310.0, 0.85, ',', 7],[317.0, 80, 'K', 7]

Na
###Large enhancement of the thermopower in Na$_x$CoO$_2$ at high Na doping|Minhyea Lee,Liliana Viciu,Lu Li,Yayu Wang,M. L. Foo,S. Watauchi,R. A. Pascal Jr.,R. J. Cava,N. P. Ong###
(919341, 919341)
Large enhancement of the thermopower in Nax<missing VAR>CoO2 at high Na doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[241.0, 0.6, '<', 5],[275.0, 0.75, ',', 6],[304.0, 0.85, ',', 7],[311.0, 80, 'K', 7]

Na
###Large enhancement of the thermopower in Na$_x$CoO$_2$ at high Na doping|Minhyea Lee,Liliana Viciu,Lu Li,Yayu Wang,M. L. Foo,S. Watauchi,R. A. Pascal Jr.,R. J. Cava,N. P. Ong###
(919434, 919434)
 The conducting layered cobaltaterm Nax<missing VAR>CoO2 displays several interesting electronic phases as x<missing VAR> is variedincluding water-induced superconductivity and an insulating state that isdestroyed by field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 0.6, '<', 2],[182.0, 0.75, ',', 3],[211.0, 0.85, ',', 4],[218.0, 80, 'K', 4]

CoO2
###Large enhancement of the thermopower in Na$_x$CoO$_2$ at high Na doping|Minhyea Lee,Liliana Viciu,Lu Li,Yayu Wang,M. L. Foo,S. Watauchi,R. A. Pascal Jr.,R. J. Cava,N. P. Ong###
(919436, 919438)
 The conducting layered cobaltaterm Nax<missing VAR>CoO2 displays several interesting electronic phases as x<missing VAR> is variedincluding water-induced superconductivity and an insulating state that isdestroyed by field.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 0.6, '<', 2],[178.0, 0.75, ',', 3],[207.0, 0.85, ',', 4],[214.0, 80, 'K', 4]

Na
###Large enhancement of the thermopower in Na$_x$CoO$_2$ at high Na doping|Minhyea Lee,Liliana Viciu,Lu Li,Yayu Wang,M. L. Foo,S. Watauchi,R. A. Pascal Jr.,R. J. Cava,N. P. Ong###
(919510, 919510)
 Initial measurements showed that, in the as-growncomposition, rm Nax<missing VAR>CoO2 displays moderately large thermopower S andconductivity sigma.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 0.6, '<', 1],[106.0, 0.75, ',', 2],[135.0, 0.85, ',', 3],[142.0, 80, 'K', 3]

CoO2
###Large enhancement of the thermopower in Na$_x$CoO$_2$ at high Na doping|Minhyea Lee,Liliana Viciu,Lu Li,Yayu Wang,M. L. Foo,S. Watauchi,R. A. Pascal Jr.,R. J. Cava,N. P. Ong###
(919512, 919514)
 Initial measurements showed that, in the as-growncomposition, rm Nax<missing VAR>CoO2 displays moderately large thermopower S andconductivity sigma.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 0.6, '<', 1],[102.0, 0.75, ',', 2],[131.0, 0.85, ',', 3],[138.0, 80, 'K', 3]

S
###Large enhancement of the thermopower in Na$_x$CoO$_2$ at high Na doping|Minhyea Lee,Liliana Viciu,Lu Li,Yayu Wang,M. L. Foo,S. Watauchi,R. A. Pascal Jr.,R. J. Cava,N. P. Ong###
(919524, 919524)
 Initial measurements showed that, in the as-growncomposition, rm Nax<missing VAR>CoO2 displays moderately large thermopower S andconductivity sigma.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 0.6, '<', 1],[92.0, 0.75, ',', 2],[121.0, 0.85, ',', 3],[128.0, 80, 'K', 3]

S
###Large enhancement of the thermopower in Na$_x$CoO$_2$ at high Na doping|Minhyea Lee,Liliana Viciu,Lu Li,Yayu Wang,M. L. Foo,S. Watauchi,R. A. Pascal Jr.,R. J. Cava,N. P. Ong###
(919619, 919619)
 Here we report that, in the poorly-exploredhigh-doping region x<missing VAR>>0.75, S undergoes an even steeper enhancement.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 0.6, '<', 1],[3.0, 0.75, ',', 0],[26.0, 0.85, ',', 1],[33.0, 80, 'K', 1]

At
###Large enhancement of the thermopower in Na$_x$CoO$_2$ at high Na doping|Minhyea Lee,Liliana Viciu,Lu Li,Yayu Wang,M. L. Foo,S. Watauchi,R. A. Pascal Jr.,R. J. Cava,N. P. Ong###
(919632, 919632)
 At thecritical doping xpsim 0.85, Z<missing VAR> (at 80 K) reaches values sim40 timeslarger than in the as-grown crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 0.6, '<', 2],[16.0, 0.75, ',', 1],[13.0, 0.85, ',', 0],[20.0, 80, 'K', 0]

Ga
###Effect of Ga doping on magnetotransport properties in collosal magnetoresistive La0.7Ca0.3Mn1-xGaxO3 (0 < x < 0.1)|Marek Pekala,Jan Mucha,Benedicte Vertruyen,Rudi Cloots,Marcel Ausloos###
(919710, 919710)
Effect of Ga doping on magnetotransport properties in collosal magnetoresistive La0.7Ca0.3Mn1-xGaxO3 (0 < x<missing VAR> < 0.1).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 0, ',', 1],[65.0, 0.025, ',', 1],[67.0, 0.05, 'and', 1],[68.0, 0.1, 'were', 1],[142.0, 8, 'T', 4],[192.0, 0.1, 'sample', 5],[294.0, 243, 'meV', 7]

La0.7Ca0.3Mn1-x
###Effect of Ga doping on magnetotransport properties in collosal magnetoresistive La0.7Ca0.3Mn1-xGaxO3 (0 < x < 0.1)|Marek Pekala,Jan Mucha,Benedicte Vertruyen,Rudi Cloots,Marcel Ausloos###
(919726, 919733)
Effect of Ga doping on magnetotransport properties in collosal magnetoresistive La0.7Ca0.3Mn1-xGaxO3 (0 < x<missing VAR> < 0.1).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[39.0, 0, ',', 1],[42.0, 0.025, ',', 1],[44.0, 0.05, 'and', 1],[45.0, 0.1, 'were', 1],[119.0, 8, 'T', 4],[169.0, 0.1, 'sample', 5],[271.0, 243, 'meV', 7]

O3
###Effect of Ga doping on magnetotransport properties in collosal magnetoresistive La0.7Ca0.3Mn1-xGaxO3 (0 < x < 0.1)|Marek Pekala,Jan Mucha,Benedicte Vertruyen,Rudi Cloots,Marcel Ausloos###
(919735, 919736)
Effect of Ga doping on magnetotransport properties in collosal magnetoresistive La0.7Ca0.3Mn1-xGaxO3 (0 < x<missing VAR> < 0.1).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 0, ',', 1],[39.0, 0.025, ',', 1],[41.0, 0.05, 'and', 1],[42.0, 0.1, 'were', 1],[116.0, 8, 'T', 4],[166.0, 0.1, 'sample', 5],[268.0, 243, 'meV', 7]

La0.7Ca0.3Mn1-x
###Effect of Ga doping on magnetotransport properties in collosal magnetoresistive La0.7Ca0.3Mn1-xGaxO3 (0 < x < 0.1)|Marek Pekala,Jan Mucha,Benedicte Vertruyen,Rudi Cloots,Marcel Ausloos###
(919755, 919762)
 Samples of La0.7Ca0.3Mn1-xGaxO3 with x<missing VAR>  0, 0.025, 0.05 and 0.10 wereprepared by standard solid-state reaction.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[10.0, 0, ',', 0],[13.0, 0.025, ',', 0],[15.0, 0.05, 'and', 0],[16.0, 0.1, 'were', 0],[90.0, 8, 'T', 3],[140.0, 0.1, 'sample', 4],[242.0, 243, 'meV', 6]

O3
###Effect of Ga doping on magnetotransport properties in collosal magnetoresistive La0.7Ca0.3Mn1-xGaxO3 (0 < x < 0.1)|Marek Pekala,Jan Mucha,Benedicte Vertruyen,Rudi Cloots,Marcel Ausloos###
(919764, 919765)
 Samples of La0.7Ca0.3Mn1-xGaxO3 with x<missing VAR>  0, 0.025, 0.05 and 0.10 wereprepared by standard solid-state reaction.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 0, ',', 0],[10.0, 0.025, ',', 0],[12.0, 0.05, 'and', 0],[13.0, 0.1, 'were', 0],[87.0, 8, 'T', 3],[137.0, 0.1, 'sample', 4],[239.0, 243, 'meV', 6]

Ga
###Effect of Ga doping on magnetotransport properties in collosal magnetoresistive La0.7Ca0.3Mn1-xGaxO3 (0 < x < 0.1)|Marek Pekala,Jan Mucha,Benedicte Vertruyen,Rudi Cloots,Marcel Ausloos###
(919914, 919914)
 The markedly different behavior of the x<missing VAR> 0.1 sample from those with a smaller Ga content, is discussed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 0, ',', 4],[139.0, 0.025, ',', 4],[137.0, 0.05, 'and', 4],[136.0, 0.1, 'were', 4],[62.0, 8, 'T', 1],[12.0, 0.1, 'sample', 0],[90.0, 243, 'meV', 2]

Mn3/Mn4
###Effect of Ga doping on magnetotransport properties in collosal magnetoresistive La0.7Ca0.3Mn1-xGaxO3 (0 < x < 0.1)|Marek Pekala,Jan Mucha,Benedicte Vertruyen,Rudi Cloots,Marcel Ausloos###
(919933, 919937)
 The dilutionof the Mn3/Mn4 interactions with Ga doping considerably reduces theferromagnetic double exchange interaction within the manganese lattice leadingto a decrease of the Curie temperature.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[161.0, 0, ',', 5],[158.0, 0.025, ',', 5],[156.0, 0.05, 'and', 5],[155.0, 0.1, 'were', 5],[81.0, 8, 'T', 2],[31.0, 0.1, 'sample', 1],[67.0, 243, 'meV', 1]

Ga
###Effect of Ga doping on magnetotransport properties in collosal magnetoresistive La0.7Ca0.3Mn1-xGaxO3 (0 < x < 0.1)|Marek Pekala,Jan Mucha,Benedicte Vertruyen,Rudi Cloots,Marcel Ausloos###
(919943, 919943)
 The dilutionof the Mn3/Mn4 interactions with Ga doping considerably reduces theferromagnetic double exchange interaction within the manganese lattice leadingto a decrease of the Curie temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[171.0, 0, ',', 5],[168.0, 0.025, ',', 5],[166.0, 0.05, 'and', 5],[165.0, 0.1, 'were', 5],[91.0, 8, 'T', 2],[41.0, 0.1, 'sample', 1],[61.0, 243, 'meV', 1]

Ga
###Effect of Ga doping on magnetotransport properties in collosal magnetoresistive La0.7Ca0.3Mn1-xGaxO3 (0 < x < 0.1)|Marek Pekala,Jan Mucha,Benedicte Vertruyen,Rudi Cloots,Marcel Ausloos###
(920010, 920010)
 The polaron binding energy varies from224 to 243 meV with increased Ga doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[238.0, 0, ',', 6],[235.0, 0.025, ',', 6],[233.0, 0.05, 'and', 6],[232.0, 0.1, 'were', 6],[158.0, 8, 'T', 3],[108.0, 0.1, 'sample', 2],[6.0, 243, 'meV', 0]

Pt/Co/Pt
###Angular dependence of domain wall resistivity in artificial magnetic domain structures|A. Aziz,S. J. Bending,H. G. Roberts,S. Crampin,P. J. Heard,C. H. Marrows###
(920075, 920079)
 We exploit the ability to precisely control the magnetic domain structure ofperpendicularly magnetized Pt/Co/Pt trilayers to fabricate artificial domainwall arrays and study their transport properties.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[188.0, 5.5, ',', 2]

In
###Transport through two-level quantum dots weakly coupled to ferromagnetic leads|I. Weymann,J. Barnas###
(920516, 920516)
 In the case of aquantum dot coupled to one half-metallic and one nonmagnetic lead, one findscharacteristic Pauli spin blockade effects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ag
###Phase coherence of conduction electrons below the Kondo temperature|Gassem M. Alzoubi Norman O. Birge###
(920691, 920691)
 We have measured the phase decoherence rate, tauphi-1 of conductionelectrons in disordered Ag wires implanted with 2 and 10 parts per million Feimpurities, by means of the weak localization magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 2, 'and', 0],[8.0, 10, 'parts', 0],[142.0, 40, 'mK', 2],[146.0, 10, 'K', 2],[174.0, 0.1, ',', 3]

Fe
###Phase coherence of conduction electrons below the Kondo temperature|Gassem M. Alzoubi Norman O. Birge###
(920705, 920705)
 We have measured the phase decoherence rate, tauphi-1 of conductionelectrons in disordered Ag wires implanted with 2 and 10 parts per million Feimpurities, by means of the weak localization magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 2, 'and', 0],[6.0, 10, 'parts', 0],[128.0, 40, 'mK', 2],[132.0, 10, 'K', 2],[160.0, 0.1, ',', 3]

Fe
###Phase coherence of conduction electrons below the Kondo temperature|Gassem M. Alzoubi Norman O. Birge###
(920735, 920735)
 The Kondotemperature of Fe in Ag, T<missing VAR>K approx 4 K, is in the ideal temperature rangeto study the progressive screening of the Fe spins as the temperature T<missing VAR> fallsbelow T<missing VAR>K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 2, 'and', 1],[36.0, 10, 'parts', 1],[98.0, 40, 'mK', 1],[102.0, 10, 'K', 1],[130.0, 0.1, ',', 2]

Ag
###Phase coherence of conduction electrons below the Kondo temperature|Gassem M. Alzoubi Norman O. Birge###
(920739, 920739)
 The Kondotemperature of Fe in Ag, T<missing VAR>K approx 4 K, is in the ideal temperature rangeto study the progressive screening of the Fe spins as the temperature T<missing VAR> fallsbelow T<missing VAR>K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 2, 'and', 1],[40.0, 10, 'parts', 1],[94.0, 40, 'mK', 1],[98.0, 10, 'K', 1],[126.0, 0.1, ',', 2]

K
###Phase coherence of conduction electrons below the Kondo temperature|Gassem M. Alzoubi Norman O. Birge###
(920743, 920743)
 The Kondotemperature of Fe in Ag, T<missing VAR>K approx 4 K, is in the ideal temperature rangeto study the progressive screening of the Fe spins as the temperature T<missing VAR> fallsbelow T<missing VAR>K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 2, 'and', 1],[44.0, 10, 'parts', 1],[90.0, 40, 'mK', 1],[94.0, 10, 'K', 1],[122.0, 0.1, ',', 2]

K
###Phase coherence of conduction electrons below the Kondo temperature|Gassem M. Alzoubi Norman O. Birge###
(920749, 920749)
 The Kondotemperature of Fe in Ag, T<missing VAR>K approx 4 K, is in the ideal temperature rangeto study the progressive screening of the Fe spins as the temperature T<missing VAR> fallsbelow T<missing VAR>K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 2, 'and', 1],[50.0, 10, 'parts', 1],[84.0, 40, 'mK', 1],[88.0, 10, 'K', 1],[116.0, 0.1, ',', 2]

Fe
###Phase coherence of conduction electrons below the Kondo temperature|Gassem M. Alzoubi Norman O. Birge###
(920779, 920779)
 The Kondotemperature of Fe in Ag, T<missing VAR>K approx 4 K, is in the ideal temperature rangeto study the progressive screening of the Fe spins as the temperature T<missing VAR> fallsbelow T<missing VAR>K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 2, 'and', 1],[80.0, 10, 'parts', 1],[54.0, 40, 'mK', 1],[58.0, 10, 'K', 1],[86.0, 0.1, ',', 2]

K
###Phase coherence of conduction electrons below the Kondo temperature|Gassem M. Alzoubi Norman O. Birge###
(920797, 920797)
 The Kondotemperature of Fe in Ag, T<missing VAR>K approx 4 K, is in the ideal temperature rangeto study the progressive screening of the Fe spins as the temperature T<missing VAR> fallsbelow T<missing VAR>K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 2, 'and', 1],[98.0, 10, 'parts', 1],[36.0, 40, 'mK', 1],[40.0, 10, 'K', 1],[68.0, 0.1, ',', 2]

Fe
###Phase coherence of conduction electrons below the Kondo temperature|Gassem M. Alzoubi Norman O. Birge###
(920815, 920815)
 The contribution to tauphi-1 from the Fe impurities isclearly visible over the temperature range 40 mK -- 10 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 2, 'and', 2],[116.0, 10, 'parts', 2],[18.0, 40, 'mK', 0],[22.0, 10, 'K', 0],[50.0, 0.1, ',', 1]

K
###Phase coherence of conduction electrons below the Kondo temperature|Gassem M. Alzoubi Norman O. Birge###
(920843, 920843)
 Below T<missing VAR>K,tauphi-1 falls rapidly until T/TK approx 0.1, in agreement withrecent theoretical calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 2, 'and', 3],[144.0, 10, 'parts', 3],[10.0, 40, 'mK', 1],[6.0, 10, 'K', 1],[22.0, 0.1, ',', 0]

K
###Phase coherence of conduction electrons below the Kondo temperature|Gassem M. Alzoubi Norman O. Birge###
(920861, 920861)
 Below T<missing VAR>K,tauphi-1 falls rapidly until T/TK approx 0.1, in agreement withrecent theoretical calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 2, 'and', 3],[162.0, 10, 'parts', 3],[28.0, 40, 'mK', 1],[24.0, 10, 'K', 1],[4.0, 0.1, ',', 0]

At
###Phase coherence of conduction electrons below the Kondo temperature|Gassem M. Alzoubi Norman O. Birge###
(920882, 920882)
 At lower T<missing VAR>, tauphi-1 deviates fromtheory with a flatter T<missing VAR>-dependence.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[184.0, 2, 'and', 4],[183.0, 10, 'parts', 4],[49.0, 40, 'mK', 2],[45.0, 10, 'K', 2],[17.0, 0.1, ',', 1]

Fe
###Phase coherence of conduction electrons below the Kondo temperature|Gassem M. Alzoubi Norman O. Birge###
(920942, 920942)
 We speculate that this latter behavior isdue to incomplete screening of the s<missing VAR>2 Fe impurities by the conductionelectrons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[244.0, 2, 'and', 5],[243.0, 10, 'parts', 5],[109.0, 40, 'mK', 3],[105.0, 10, 'K', 3],[77.0, 0.1, ',', 2]

BaVS3
###Magnetic-field-induced transition in BaVS3|P. Fazekas,N. Barisic,I. Kezsmarki,L. Demko,H. Berger,L. Forro,G. Mihaly###
(920974, 920977)
Magnetic-field-induced transition in BaVS3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BaVS3
###Magnetic-field-induced transition in BaVS3|P. Fazekas,N. Barisic,I. Kezsmarki,L. Demko,H. Berger,L. Forro,G. Mihaly###
(920996, 920999)
 The metal-insulator transition (MIT) of BaVS3 is suppressed under pressureand above the critical pressure of p2GPa the metallic phase is stabilized.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pa
###Magnetic-field-induced transition in BaVS3|P. Fazekas,N. Barisic,I. Kezsmarki,L. Demko,H. Berger,L. Forro,G. Mihaly###
(921025, 921025)
 The metal-insulator transition (MIT) of BaVS3 is suppressed under pressureand above the critical pressure of p2GPa the metallic phase is stabilized.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B12
###Magnetic-field-induced transition in BaVS3|P. Fazekas,N. Barisic,I. Kezsmarki,L. Demko,H. Berger,L. Forro,G. Mihaly###
(921083, 921084)
 Wepresent the results of detailed magnetoresistivity measurements carried out atpressures near the critical value, in magnetic fields up to B12T<missing VAR>.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Magnetic-field-induced transition in BaVS3|P. Fazekas,N. Barisic,I. Kezsmarki,L. Demko,H. Berger,L. Forro,G. Mihaly###
(921176, 921176)
 Ifthe zero-field transition temperature is suppressed to a sufficiently low value(TMI<15K), the system can be driven into the metallic state by application ofmagnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Magnetic-field-induced transition in BaVS3|P. Fazekas,N. Barisic,I. Kezsmarki,L. Demko,H. Berger,L. Forro,G. Mihaly###
(921179, 921179)
 Ifthe zero-field transition temperature is suppressed to a sufficiently low value(TMI<15K), the system can be driven into the metallic state by application ofmagnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Magnetic-field-induced transition in BaVS3|P. Fazekas,N. Barisic,I. Kezsmarki,L. Demko,H. Berger,L. Forro,G. Mihaly###
(921231, 921231)
 The main effect is not the reduction of TMI with increasing B,but rather the broadening of the transition due to the applied magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Magnetic-field-induced transition in BaVS3|P. Fazekas,N. Barisic,I. Kezsmarki,L. Demko,H. Berger,L. Forro,G. Mihaly###
(921237, 921237)
 The main effect is not the reduction of TMI with increasing B,but rather the broadening of the transition due to the applied magnetic field.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###Angle-dependent magnetotransport in cubic and tetragonal ferromagnets: Application to (001)- and (113)A-oriented (Ga,Mn)As|W. Limmer,M. Glunk,J. Daeubler,T. Hummel,W. Schoch,R. Sauer,C. Bihler,H. Huebl,M. S. Brandt,S. T. B. Goennenwein###
(921354, 921354)
Angle-dependent magnetotransport in cubic and tetragonal ferromagnets Application to (001)- and (113)A-oriented (Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Angle-dependent magnetotransport in cubic and tetragonal ferromagnets: Application to (001)- and (113)A-oriented (Ga,Mn)As|W. Limmer,M. Glunk,J. Daeubler,T. Hummel,W. Schoch,R. Sauer,C. Bihler,H. Huebl,M. S. Brandt,S. T. B. Goennenwein###
(921356, 921356)
Angle-dependent magnetotransport in cubic and tetragonal ferromagnets Application to (001)- and (113)A-oriented (Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Angle-dependent magnetotransport in cubic and tetragonal ferromagnets: Application to (001)- and (113)A-oriented (Ga,Mn)As|W. Limmer,M. Glunk,J. Daeubler,T. Hummel,W. Schoch,R. Sauer,C. Bihler,H. Huebl,M. S. Brandt,S. T. B. Goennenwein###
(921358, 921358)
Angle-dependent magnetotransport in cubic and tetragonal ferromagnets Application to (001)- and (113)A-oriented (Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###Angle-dependent magnetotransport in cubic and tetragonal ferromagnets: Application to (001)- and (113)A-oriented (Ga,Mn)As|W. Limmer,M. Glunk,J. Daeubler,T. Hummel,W. Schoch,R. Sauer,C. Bihler,H. Huebl,M. S. Brandt,S. T. B. Goennenwein###
(921438, 921438)
 They are applied to strained (Ga,Mn)As films, grown on (001)- and(113)A-oriented GaAs substrates, where the resistivities are theoretically andexperimentally studied for magnetic fields rotated within various planesparallel and perpendicular to the sample surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Angle-dependent magnetotransport in cubic and tetragonal ferromagnets: Application to (001)- and (113)A-oriented (Ga,Mn)As|W. Limmer,M. Glunk,J. Daeubler,T. Hummel,W. Schoch,R. Sauer,C. Bihler,H. Huebl,M. S. Brandt,S. T. B. Goennenwein###
(921440, 921440)
 They are applied to strained (Ga,Mn)As films, grown on (001)- and(113)A-oriented GaAs substrates, where the resistivities are theoretically andexperimentally studied for magnetic fields rotated within various planesparallel and perpendicular to the sample surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Angle-dependent magnetotransport in cubic and tetragonal ferromagnets: Application to (001)- and (113)A-oriented (Ga,Mn)As|W. Limmer,M. Glunk,J. Daeubler,T. Hummel,W. Schoch,R. Sauer,C. Bihler,H. Huebl,M. S. Brandt,S. T. B. Goennenwein###
(921442, 921442)
 They are applied to strained (Ga,Mn)As films, grown on (001)- and(113)A-oriented GaAs substrates, where the resistivities are theoretically andexperimentally studied for magnetic fields rotated within various planesparallel and perpendicular to the sample surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Angle-dependent magnetotransport in cubic and tetragonal ferromagnets: Application to (001)- and (113)A-oriented (Ga,Mn)As|W. Limmer,M. Glunk,J. Daeubler,T. Hummel,W. Schoch,R. Sauer,C. Bihler,H. Huebl,M. S. Brandt,S. T. B. Goennenwein###
(921466, 921467)
 They are applied to strained (Ga,Mn)As films, grown on (001)- and(113)A-oriented GaAs substrates, where the resistivities are theoretically andexperimentally studied for magnetic fields rotated within various planesparallel and perpendicular to the sample surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###Angle-dependent magnetotransport in cubic and tetragonal ferromagnets: Application to (001)- and (113)A-oriented (Ga,Mn)As|W. Limmer,M. Glunk,J. Daeubler,T. Hummel,W. Schoch,R. Sauer,C. Bihler,H. Huebl,M. S. Brandt,S. T. B. Goennenwein###
(921647, 921647)
 Theanisotropy parameters of the (Ga,Mn)As films inferred from the magnetotransportmeasurements agree with those obtained by ferromagnetic resonance measurementswithin a factor of two.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Angle-dependent magnetotransport in cubic and tetragonal ferromagnets: Application to (001)- and (113)A-oriented (Ga,Mn)As|W. Limmer,M. Glunk,J. Daeubler,T. Hummel,W. Schoch,R. Sauer,C. Bihler,H. Huebl,M. S. Brandt,S. T. B. Goennenwein###
(921649, 921649)
 Theanisotropy parameters of the (Ga,Mn)As films inferred from the magnetotransportmeasurements agree with those obtained by ferromagnetic resonance measurementswithin a factor of two.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Angle-dependent magnetotransport in cubic and tetragonal ferromagnets: Application to (001)- and (113)A-oriented (Ga,Mn)As|W. Limmer,M. Glunk,J. Daeubler,T. Hummel,W. Schoch,R. Sauer,C. Bihler,H. Huebl,M. S. Brandt,S. T. B. Goennenwein###
(921651, 921651)
 Theanisotropy parameters of the (Ga,Mn)As films inferred from the magnetotransportmeasurements agree with those obtained by ferromagnetic resonance measurementswithin a factor of two.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La1-xCa
###Influence of magnetic field on paramagnetic-ferromagnetic transition in La$_{1-x}$Ca$_{x}$MnO$_{3}$ ($x\approx 0.25$) crystal: ultrasonic and transport studies|B. I. Belevtsev,G. A. Zvyagina,K. R. Zhekov,I. G. Kolobov,E. Yu. Beliayev,A. S. Panfilov,N. N. Galtsov,A. I. Prokhvatilov,J. Fink-Finowicki###
(921720, 921724)
Influence of magnetic field on paramagnetic-ferromagnetic transition in La1-xCax<missing VAR>MnO3 (x<missing VAR>approx 0.25) crystal ultrasonic and transport studies.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[62.0, 200, 'K', 1]

MnO3
###Influence of magnetic field on paramagnetic-ferromagnetic transition in La$_{1-x}$Ca$_{x}$MnO$_{3}$ ($x\approx 0.25$) crystal: ultrasonic and transport studies|B. I. Belevtsev,G. A. Zvyagina,K. R. Zhekov,I. G. Kolobov,E. Yu. Beliayev,A. S. Panfilov,N. N. Galtsov,A. I. Prokhvatilov,J. Fink-Finowicki###
(921726, 921728)
Influence of magnetic field on paramagnetic-ferromagnetic transition in La1-xCax<missing VAR>MnO3 (x<missing VAR>approx 0.25) crystal ultrasonic and transport studies.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 200, 'K', 1]

La1-xCa
###Influence of magnetic field on paramagnetic-ferromagnetic transition in La$_{1-x}$Ca$_{x}$MnO$_{3}$ ($x\approx 0.25$) crystal: ultrasonic and transport studies|B. I. Belevtsev,G. A. Zvyagina,K. R. Zhekov,I. G. Kolobov,E. Yu. Beliayev,A. S. Panfilov,N. N. Galtsov,A. I. Prokhvatilov,J. Fink-Finowicki###
(921756, 921760)
 The ultrasonic properties of La1-xCax<missing VAR>MnO3 (x<missing VAR>approx 0.25)with the Curie temperature T<missing VAR>C about 200 K are studied.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[26.0, 200, 'K', 0]

MnO3
###Influence of magnetic field on paramagnetic-ferromagnetic transition in La$_{1-x}$Ca$_{x}$MnO$_{3}$ ($x\approx 0.25$) crystal: ultrasonic and transport studies|B. I. Belevtsev,G. A. Zvyagina,K. R. Zhekov,I. G. Kolobov,E. Yu. Beliayev,A. S. Panfilov,N. N. Galtsov,A. I. Prokhvatilov,J. Fink-Finowicki###
(921762, 921764)
 The ultrasonic properties of La1-xCax<missing VAR>MnO3 (x<missing VAR>approx 0.25)with the Curie temperature T<missing VAR>C about 200 K are studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 200, 'K', 0]

C
###Influence of magnetic field on paramagnetic-ferromagnetic transition in La$_{1-x}$Ca$_{x}$MnO$_{3}$ ($x\approx 0.25$) crystal: ultrasonic and transport studies|B. I. Belevtsev,G. A. Zvyagina,K. R. Zhekov,I. G. Kolobov,E. Yu. Beliayev,A. S. Panfilov,N. N. Galtsov,A. I. Prokhvatilov,J. Fink-Finowicki###
(921783, 921783)
 The ultrasonic properties of La1-xCax<missing VAR>MnO3 (x<missing VAR>approx 0.25)with the Curie temperature T<missing VAR>C about 200 K are studied.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 200, 'K', 0]

MnSi
###Theoretical proposal predicting anomalous magnetoresistance and quadratic Hall effect in the partially ordered state of MnSi|B. Binz,A. Vishwanath###
(922046, 922047)
Theoretical proposal predicting anomalous magnetoresistance and quadratic Hall effect in the partially ordered state of MnSi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 96, ',', 7]

In
###Theoretical proposal predicting anomalous magnetoresistance and quadratic Hall effect in the partially ordered state of MnSi|B. Binz,A. Vishwanath###
(922050, 922050)
 In [B.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 96, ',', 6]

B
###Theoretical proposal predicting anomalous magnetoresistance and quadratic Hall effect in the partially ordered state of MnSi|B. Binz,A. Vishwanath###
(922053, 922053)
 In [B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 96, ',', 6]

V
###Theoretical proposal predicting anomalous magnetoresistance and quadratic Hall effect in the partially ordered state of MnSi|B. Binz,A. Vishwanath###
(922066, 922066)
 Vishwanath and V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 96, ',', 4]

MnSi
###Theoretical proposal predicting anomalous magnetoresistance and quadratic Hall effect in the partially ordered state of MnSi|B. Binz,A. Vishwanath###
(922149, 922150)
 96, 207202 (2006)], amagnetic structure that breaks time reversal symmetry in the absence of netmagnetization was proposed as an explanation for the high pressure partiallyordered state of MnSi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 96, ',', 0]

F
###Microwave spectroscopy of Q1D and Q2D organic conductors|Stephen Hill,Susumu Takahashi###
(922485, 922485)
 Datafor three contrasting materials are presented (TMTSF)2ClO4,alpha-(BEDT-TTF)2KHg(SCN)4 and kappa-(BEDT-TTF)2I3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ClO4
###Microwave spectroscopy of Q1D and Q2D organic conductors|Stephen Hill,Susumu Takahashi###
(922488, 922490)
 Datafor three contrasting materials are presented (TMTSF)2ClO4,alpha-(BEDT-TTF)2KHg(SCN)4 and kappa-(BEDT-TTF)2I3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Microwave spectroscopy of Q1D and Q2D organic conductors|Stephen Hill,Susumu Takahashi###
(922497, 922497)
 Datafor three contrasting materials are presented (TMTSF)2ClO4,alpha-(BEDT-TTF)2KHg(SCN)4 and kappa-(BEDT-TTF)2I3.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Microwave spectroscopy of Q1D and Q2D organic conductors|Stephen Hill,Susumu Takahashi###
(922504, 922504)
 Datafor three contrasting materials are presented (TMTSF)2ClO4,alpha-(BEDT-TTF)2KHg(SCN)4 and kappa-(BEDT-TTF)2I3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

KHg(SCN)4
###Microwave spectroscopy of Q1D and Q2D organic conductors|Stephen Hill,Susumu Takahashi###
(922507, 922514)
 Datafor three contrasting materials are presented (TMTSF)2ClO4,alpha-(BEDT-TTF)2KHg(SCN)4 and kappa-(BEDT-TTF)2I3.
Featurization terminated normally.
0,0,0,0,0,0.2857142857142857,0.2857142857142857,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0.07142857142857142,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07142857142857142,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Microwave spectroscopy of Q1D and Q2D organic conductors|Stephen Hill,Susumu Takahashi###
(922521, 922521)
 Datafor three contrasting materials are presented (TMTSF)2ClO4,alpha-(BEDT-TTF)2KHg(SCN)4 and kappa-(BEDT-TTF)2I3.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Microwave spectroscopy of Q1D and Q2D organic conductors|Stephen Hill,Susumu Takahashi###
(922528, 922528)
 Datafor three contrasting materials are presented (TMTSF)2ClO4,alpha-(BEDT-TTF)2KHg(SCN)4 and kappa-(BEDT-TTF)2I3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I3
###Microwave spectroscopy of Q1D and Q2D organic conductors|Stephen Hill,Susumu Takahashi###
(922531, 922532)
 Datafor three contrasting materials are presented (TMTSF)2ClO4,alpha-(BEDT-TTF)2KHg(SCN)4 and kappa-(BEDT-TTF)2I3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(IV)
###Low-frequency noise and tunnelling magnetoresistance in Fe(110)/MgO(111)/Fe(110) epitaxial magnetic tunnel junctions|R. Guerrero,F. G. Aliev,R. Villar,J. Hauch,M. Fraune,G. Guntherodt,K. Rott,H. Bruckl,G. Reiss###
(922788, 922791)
 We report on tunnelling magnetoresistance (TMR), current-voltage (IV)characteristics and low frequency noise in epitaxially grownFe(110)/MgO(111)/Fe(110) magnetic tunnel junctions (MTJs) with dimensions from2x<missing VAR>2 to 20x20 um2.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 20, 'x', 0]

MgO
###Low-frequency noise and tunnelling magnetoresistance in Fe(110)/MgO(111)/Fe(110) epitaxial magnetic tunnel junctions|R. Guerrero,F. G. Aliev,R. Villar,J. Hauch,M. Fraune,G. Guntherodt,K. Rott,H. Bruckl,G. Reiss###
(922862, 922863)
 The evaluated MgO energy barrier (0.50/-0.08 e<missing VAR>V), thebarrier width (13.1/-0.5 angstrom) as well as the resistance times areaproduct (7/-1 Mohmsum2) show relatively small variation, confirming a highquality epitaxy and uniformity of all MTJs studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 20, 'x', 1]

V
###Low-frequency noise and tunnelling magnetoresistance in Fe(110)/MgO(111)/Fe(110) epitaxial magnetic tunnel junctions|R. Guerrero,F. G. Aliev,R. Villar,J. Hauch,M. Fraune,G. Guntherodt,K. Rott,H. Bruckl,G. Reiss###
(922876, 922876)
 The evaluated MgO energy barrier (0.50/-0.08 e<missing VAR>V), thebarrier width (13.1/-0.5 angstrom) as well as the resistance times areaproduct (7/-1 Mohmsum2) show relatively small variation, confirming a highquality epitaxy and uniformity of all MTJs studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 20, 'x', 1]

La0.7Ba0.3MnO3
###Swift-heavy-ion-irradiation-induced enhancement in electrical conductivity of chemical solution deposited La0.7Ba0.3MnO3 thin films|R. N. Parmar,J. H. Markna,D. G. Kuberkar,Ravi Kumar,D. S. Rana,Vivas C. Bagve,S. K. Malik###
(923124, 923130)
Swift-heavy-ion-irradiation-induced enhancement in electrical conductivity of chemical solution deposited La0.7Ba0.3MnO3 thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 200, 'MeV', 1],[66.0, 1, 'x', 1],[140.0, 1, 'x', 3],[164.0, 10, ',', 3],[168.0, 330, 'K', 3],[187.0, 10, 'K', 3]

La0.7Ba0.3MnO3
###Swift-heavy-ion-irradiation-induced enhancement in electrical conductivity of chemical solution deposited La0.7Ba0.3MnO3 thin films|R. N. Parmar,J. H. Markna,D. G. Kuberkar,Ravi Kumar,D. S. Rana,Vivas C. Bagve,S. K. Malik###
(923145, 923151)
 Epitaxial thin films of La0.7Ba0.3MnO3 manganite, deposited using ChemicalSolution Deposition technique, were irradiated by 200 MeV Ag15 ions with amaximum ion dose up to 1x1012 ions/cm2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 200, 'MeV', 0],[45.0, 1, 'x', 0],[119.0, 1, 'x', 2],[143.0, 10, ',', 2],[147.0, 330, 'K', 2],[166.0, 10, 'K', 2]

Ag15
###Swift-heavy-ion-irradiation-induced enhancement in electrical conductivity of chemical solution deposited La0.7Ba0.3MnO3 thin films|R. N. Parmar,J. H. Markna,D. G. Kuberkar,Ravi Kumar,D. S. Rana,Vivas C. Bagve,S. K. Malik###
(923177, 923178)
 Epitaxial thin films of La0.7Ba0.3MnO3 manganite, deposited using ChemicalSolution Deposition technique, were irradiated by 200 MeV Ag15 ions with amaximum ion dose up to 1x1012 ions/cm2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 200, 'MeV', 0],[18.0, 1, 'x', 0],[92.0, 1, 'x', 2],[116.0, 10, ',', 2],[120.0, 330, 'K', 2],[139.0, 10, 'K', 2]

I
###Swift-heavy-ion-irradiation-induced enhancement in electrical conductivity of chemical solution deposited La0.7Ba0.3MnO3 thin films|R. N. Parmar,J. H. Markna,D. G. Kuberkar,Ravi Kumar,D. S. Rana,Vivas C. Bagve,S. K. Malik###
(923306, 923306)
 A maximum dose of 1x1012 ions/cm2 suppresses resistivity by factors of 3and 10, at 330 K [insulator-metal (I-M) transition] and at 10 K, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 200, 'MeV', 2],[110.0, 1, 'x', 2],[36.0, 1, 'x', 0],[12.0, 10, ',', 0],[8.0, 330, 'K', 0],[11.0, 10, 'K', 0]

I
###Swift-heavy-ion-irradiation-induced enhancement in electrical conductivity of chemical solution deposited La0.7Ba0.3MnO3 thin films|R. N. Parmar,J. H. Markna,D. G. Kuberkar,Ravi Kumar,D. S. Rana,Vivas C. Bagve,S. K. Malik###
(923362, 923362)
On the other hand, with increasing ion dose, the magnetoresistance (MR)enhances in the vicinity of I-M<missing VAR> transition but decreases at low temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[187.0, 200, 'MeV', 3],[166.0, 1, 'x', 3],[92.0, 1, 'x', 1],[68.0, 10, ',', 1],[64.0, 330, 'K', 1],[45.0, 10, 'K', 1]

O
###Sensitivity of the interlayer magnetoresistance of layered metals to intralayer anisotropies|Malcolm P. Kennett,Ross H. McKenzie###
(923631, 923631)
 Weshow that angle dependent magnetoresistance oscillations (AMRO) are sensitiveto anisotropies around an intralayer Fermi surface.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Sensitivity of the interlayer magnetoresistance of layered metals to intralayer anisotropies|Malcolm P. Kennett,Ross H. McKenzie###
(923660, 923660)
 Hence, AMRO can be a probeof intralayer anisotropies that is complementary to angle-resolvedphotoemission spectroscopy (ARPES) and scanning tunneling microscopy (STM).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Sensitivity of the interlayer magnetoresistance of layered metals to intralayer anisotropies|Malcolm P. Kennett,Ross H. McKenzie###
(923699, 923699)
 Hence, AMRO can be a probeof intralayer anisotropies that is complementary to angle-resolvedphotoemission spectroscopy (ARPES) and scanning tunneling microscopy (STM).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Sensitivity of the interlayer magnetoresistance of layered metals to intralayer anisotropies|Malcolm P. Kennett,Ross H. McKenzie###
(923711, 923711)
 Hence, AMRO can be a probeof intralayer anisotropies that is complementary to angle-resolvedphotoemission spectroscopy (ARPES) and scanning tunneling microscopy (STM).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Sensitivity of the interlayer magnetoresistance of layered metals to intralayer anisotropies|Malcolm P. Kennett,Ross H. McKenzie###
(923724, 923724)
However, AMRO are not very sensitive to the coherence of the interlayertransport.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Sensitivity of the interlayer magnetoresistance of layered metals to intralayer anisotropies|Malcolm P. Kennett,Ross H. McKenzie###
(923767, 923767)
 We illustrate this with comparisons to recent AMRO experiments on anoverdoped cuprate.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Hopping Conduction in Disordered Carbon Nanotubes|D. P. Wang,D. E. Feldman,B. R. Perkins,A. J. Yin,G. H. Wang,J. M. Xu,A. Zaslavsky###
(923844, 923844)
In both as-grown and annealed types of nanotubes, the low-field conductanceshows as exp[-(T<missing VAR>0/T)1/2] dependence on temperature T<missing VAR>, suggesting thathopping conduction is the dominant transport mechanism, albeit with differentdisorder-related coefficients T<missing VAR>0.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 1.7, 'K', 2]

B
###Pressure dependence of the magnetoresistance oscillations spectrum of beta''-(BEDT-TTF)4(NH4)[Fe(C2O4)3].DMF|Alain Audouard,Vladimir N. Laukhin,Jérome Béard,David Vignolles,Marc Nardone,Enric Canadell,Tatyana G. Prokhorova,Eduard Yagubskii###
(924758, 924758)
Pressure dependence of the magnetoresistance oscillations spectrum of beta-(BEDT-TTF)4(NH4)[Fe(C2O4)3].
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 1, 'GPa', 3],[116.0, 55, 'T', 3]

F
###Pressure dependence of the magnetoresistance oscillations spectrum of beta''-(BEDT-TTF)4(NH4)[Fe(C2O4)3].DMF|Alain Audouard,Vladimir N. Laukhin,Jérome Béard,David Vignolles,Marc Nardone,Enric Canadell,Tatyana G. Prokhorova,Eduard Yagubskii###
(924765, 924765)
Pressure dependence of the magnetoresistance oscillations spectrum of beta-(BEDT-TTF)4(NH4)[Fe(C2O4)3].
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 1, 'GPa', 3],[109.0, 55, 'T', 3]

(NH4)
###Pressure dependence of the magnetoresistance oscillations spectrum of beta''-(BEDT-TTF)4(NH4)[Fe(C2O4)3].DMF|Alain Audouard,Vladimir N. Laukhin,Jérome Béard,David Vignolles,Marc Nardone,Enric Canadell,Tatyana G. Prokhorova,Eduard Yagubskii###
(924768, 924772)
Pressure dependence of the magnetoresistance oscillations spectrum of beta-(BEDT-TTF)4(NH4)[Fe(C2O4)3].
Featurization successful!
0.8,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 1, 'GPa', 3],[102.0, 55, 'T', 3]

SiO2
###Anomalous Resistance Ridges Along Filling Factor $ν= 4i$|K. Takashina,M. Brun,T. Ota,D. K. Maude,A. Fujiwara,Y. Ono,Y. Takahashi,Y. Hirayama###
(925473, 925475)
 We report anomalous structure in the magnetoresistance ofSiO2/Si(100)/SiO2 quantum wells.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 4, 'i', 1]

Co2Cr0.6Fe0.4Al
###Epitaxial Co2Cr0.6Fe0.4Al thin films and magnetic tunneling junctions|A. Conca,M. Jourdan,H. Adrian###
(925718, 925724)
Epitaxial Co2Cr0.6Fe0.4Al thin films and magnetic tunneling junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.15,0,0.1,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[206.0, 54, '%', 4]

Co2Cr0.6Fe0.4Al
###Epitaxial Co2Cr0.6Fe0.4Al thin films and magnetic tunneling junctions|A. Conca,M. Jourdan,H. Adrian###
(925758, 925764)
 Epitaxial thin films of the theoretically predicted half metalCo2Cr0.6Fe0.4Al were deposited by dc magnetron sputtering on differentsubstrates and buffer layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.15,0,0.1,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 54, '%', 3]

B2
###Epitaxial Co2Cr0.6Fe0.4Al thin films and magnetic tunneling junctions|A. Conca,M. Jourdan,H. Adrian###
(925827, 925828)
 The samples were characterized by x<missing VAR>-ray andelectron beam diffraction (RHEED) demonstrating the B2 order of the Heuslercompound with only a small partition of disorder on the Co sites.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 54, '%', 2]

Co
###Epitaxial Co2Cr0.6Fe0.4Al thin films and magnetic tunneling junctions|A. Conca,M. Jourdan,H. Adrian###
(925859, 925859)
 The samples were characterized by x<missing VAR>-ray andelectron beam diffraction (RHEED) demonstrating the B2 order of the Heuslercompound with only a small partition of disorder on the Co sites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 54, '%', 2]

Co2Cr0.6Fe0.4Al
###Epitaxial Co2Cr0.6Fe0.4Al thin films and magnetic tunneling junctions|A. Conca,M. Jourdan,H. Adrian###
(925873, 925879)
 Magnetictunneling junctions with Co2Cr0.6Fe0.4Al electrode, AlOx barrier and Co counterelectrode were prepared.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.15,0,0.1,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 54, '%', 1]

Al
###Epitaxial Co2Cr0.6Fe0.4Al thin films and magnetic tunneling junctions|A. Conca,M. Jourdan,H. Adrian###
(925884, 925884)
 Magnetictunneling junctions with Co2Cr0.6Fe0.4Al electrode, AlOx barrier and Co counterelectrode were prepared.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 54, '%', 1]

Co
###Epitaxial Co2Cr0.6Fe0.4Al thin films and magnetic tunneling junctions|A. Conca,M. Jourdan,H. Adrian###
(925891, 925891)
 Magnetictunneling junctions with Co2Cr0.6Fe0.4Al electrode, AlOx barrier and Co counterelectrode were prepared.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 54, '%', 1]

Co2Cr0.6Fe0.4Al
###Epitaxial Co2Cr0.6Fe0.4Al thin films and magnetic tunneling junctions|A. Conca,M. Jourdan,H. Adrian###
(925920, 925926)
 From the Julliere model a spin polarisation ofCo2Cr0.6Fe0.4Al of 54% at T<missing VAR>4K is deduced.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.15,0,0.1,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 54, '%', 0]

K
###Epitaxial Co2Cr0.6Fe0.4Al thin films and magnetic tunneling junctions|A. Conca,M. Jourdan,H. Adrian###
(925937, 925937)
 From the Julliere model a spin polarisation ofCo2Cr0.6Fe0.4Al of 54% at T<missing VAR>4K is deduced.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 54, '%', 0]

S
###Epitaxial Co2Cr0.6Fe0.4Al thin films and magnetic tunneling junctions|A. Conca,M. Jourdan,H. Adrian###
(926021, 926021)
 The relation between the annealingtemperature of the Heusler electrodes and the magnitude of the tunnelingmagnetoresistance effect was investigated and the results are discussed in theframework of morphology and surface order based of in situ STM and RHEEDinvestigations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 54, '%', 1]

Co2FeSi
###Structural, magnetic, and transport properties of Co$_2$FeSi Heusler films|H. Schneider,Ch. Herbort,G. Jakob,H. Adrian,S. Wurmehl,C. Felser###
(926059, 926062)
Structural, magnetic, and transport properties of Co2FeSi Heusler films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0.25,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co2FeSi
###Structural, magnetic, and transport properties of Co$_2$FeSi Heusler films|H. Schneider,Ch. Herbort,G. Jakob,H. Adrian,S. Wurmehl,C. Felser###
(926081, 926084)
 We report the deposition of thin Co2FeSi films by R<missing VAR>F magnetron sputtering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0.25,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Structural, magnetic, and transport properties of Co$_2$FeSi Heusler films|H. Schneider,Ch. Herbort,G. Jakob,H. Adrian,S. Wurmehl,C. Felser###
(926091, 926091)
 We report the deposition of thin Co2FeSi films by R<missing VAR>F magnetron sputtering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O3
###Structural, magnetic, and transport properties of Co$_2$FeSi Heusler films|H. Schneider,Ch. Herbort,G. Jakob,H. Adrian,S. Wurmehl,C. Felser###
(926151, 926152)
 (110)-oriented films on Al2O3(110) show severalepitaxial domains in the film plane.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Structural, magnetic, and transport properties of Co$_2$FeSi Heusler films|H. Schneider,Ch. Herbort,G. Jakob,H. Adrian,S. Wurmehl,C. Felser###
(926199, 926199)
 Investigation of the magnetic propertiesreveals a saturation magnetization of 5.0 muB/f.u.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Structural, magnetic, and transport properties of Co$_2$FeSi Heusler films|H. Schneider,Ch. Herbort,G. Jakob,H. Adrian,S. Wurmehl,C. Felser###
(926253, 926253)
 Thetemperature dependence of the resistivity rhoxx(T) exhibits a crossoverfrom a T<missing VAR>3.5 law at T<missing VAR><50K to a T<missing VAR>1.65 behaviour at elevated temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(H)
###Structural, magnetic, and transport properties of Co$_2$FeSi Heusler films|H. Schneider,Ch. Herbort,G. Jakob,H. Adrian,S. Wurmehl,C. Felser###
(926274, 926276)
rhoxx(H) shows a small anisotropic magnetoresistive effect.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Negative magnetoresistance and phase slip process in superconducting nanowires|D. Y. Vodolazov###
(926884, 926884)
We show that the suppression of the order parameter in the bulk superconductorsmade by an external magnetic field can lead to an enhancement of both the firstIc<missing VAR>1 and the second Ic<missing VAR>2 critical currents of the phase slip process innanowires.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Negative magnetoresistance and phase slip process in superconducting nanowires|D. Y. Vodolazov###
(926894, 926894)
We show that the suppression of the order parameter in the bulk superconductorsmade by an external magnetic field can lead to an enhancement of both the firstIc<missing VAR>1 and the second Ic<missing VAR>2 critical currents of the phase slip process innanowires.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Negative magnetoresistance and phase slip process in superconducting nanowires|D. Y. Vodolazov###
(926930, 926930)
 Another mechanism of an enhancement of Ic<missing VAR>1 can come fromdecreasing the decay length of the charge imbalance lambdaQ<missing VAR> at weakmagnetic fields because Ic<missing VAR>1 is inversely proportional to lambdaQ<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Negative magnetoresistance and phase slip process in superconducting nanowires|D. Y. Vodolazov###
(926971, 926971)
 Another mechanism of an enhancement of Ic<missing VAR>1 can come fromdecreasing the decay length of the charge imbalance lambdaQ<missing VAR> at weakmagnetic fields because Ic<missing VAR>1 is inversely proportional to lambdaQ<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/Cr
###Calculations of giant magnetoresistance in Fe/Cr trilayers using layer potentials determined from {\it ab-initio} methods|M. Pereiro,D. Baldomir,S. V. Man'kovsky,K. Warda,J. E. Arias,L. Wojtczak,J. Botana###
(927091, 927093)
Calculations of giant magnetoresistance in Fe/Cr trilayers using layer potentials determined from it ab-initio methods.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[163.0, 3, 'monolayers', 2]

Fe
###Calculations of giant magnetoresistance in Fe/Cr trilayers using layer potentials determined from {\it ab-initio} methods|M. Pereiro,D. Baldomir,S. V. Man'kovsky,K. Warda,J. E. Arias,L. Wojtczak,J. Botana###
(927179, 927179)
 The ab initio full-potential linearized augmented plane-wave methodexplicitly designed for the slab geometry was employed to elucidate thephysical origin of the layer potentials for the trilayers n<missing VAR>Fe/3Cr/n<missing VAR>Fe(001),where n<missing VAR> is the number of Fe monolayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 3, 'monolayers', 1]

Cr
###Calculations of giant magnetoresistance in Fe/Cr trilayers using layer potentials determined from {\it ab-initio} methods|M. Pereiro,D. Baldomir,S. V. Man'kovsky,K. Warda,J. E. Arias,L. Wojtczak,J. Botana###
(927182, 927182)
 The ab initio full-potential linearized augmented plane-wave methodexplicitly designed for the slab geometry was employed to elucidate thephysical origin of the layer potentials for the trilayers n<missing VAR>Fe/3Cr/n<missing VAR>Fe(001),where n<missing VAR> is the number of Fe monolayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 3, 'monolayers', 1]

Fe
###Calculations of giant magnetoresistance in Fe/Cr trilayers using layer potentials determined from {\it ab-initio} methods|M. Pereiro,D. Baldomir,S. V. Man'kovsky,K. Warda,J. E. Arias,L. Wojtczak,J. Botana###
(927204, 927204)
 The ab initio full-potential linearized augmented plane-wave methodexplicitly designed for the slab geometry was employed to elucidate thephysical origin of the layer potentials for the trilayers n<missing VAR>Fe/3Cr/n<missing VAR>Fe(001),where n<missing VAR> is the number of Fe monolayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 3, 'monolayers', 1]

Ga
###Anisotropic Magnetoresistance components in (Ga,Mn)As|A. W. Rushforth,K. Výborný,C. S. King,K. W. Edmonds,R. P. Campion,C. T. Foxon,J. Wunderlich,A. C. Irvine,P. Vašek,V. Novák,K. Olejník,Jairo Sinova,T. Jungwirth,B. L. Gallagher###
(927431, 927431)
Anisotropic Magnetoresistance components in (Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Anisotropic Magnetoresistance components in (Ga,Mn)As|A. W. Rushforth,K. Výborný,C. S. King,K. W. Edmonds,R. P. Campion,C. T. Foxon,J. Wunderlich,A. C. Irvine,P. Vašek,V. Novák,K. Olejník,Jairo Sinova,T. Jungwirth,B. L. Gallagher###
(927433, 927433)
Anisotropic Magnetoresistance components in (Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Anisotropic Magnetoresistance components in (Ga,Mn)As|A. W. Rushforth,K. Výborný,C. S. King,K. W. Edmonds,R. P. Campion,C. T. Foxon,J. Wunderlich,A. C. Irvine,P. Vašek,V. Novák,K. Olejník,Jairo Sinova,T. Jungwirth,B. L. Gallagher###
(927435, 927435)
Anisotropic Magnetoresistance components in (Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###Anisotropic Magnetoresistance components in (Ga,Mn)As|A. W. Rushforth,K. Výborný,C. S. King,K. W. Edmonds,R. P. Campion,C. T. Foxon,J. Wunderlich,A. C. Irvine,P. Vašek,V. Novák,K. Olejník,Jairo Sinova,T. Jungwirth,B. L. Gallagher###
(927480, 927480)
 Our experimental and theoretical study of the non-crystalline and crystallinecomponents of the anisotropic magnetoresistance (AMR) in (Ga,Mn)As is aimed atexploring the basic physical aspects of this relativistic transport effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Anisotropic Magnetoresistance components in (Ga,Mn)As|A. W. Rushforth,K. Výborný,C. S. King,K. W. Edmonds,R. P. Campion,C. T. Foxon,J. Wunderlich,A. C. Irvine,P. Vašek,V. Novák,K. Olejník,Jairo Sinova,T. Jungwirth,B. L. Gallagher###
(927482, 927482)
 Our experimental and theoretical study of the non-crystalline and crystallinecomponents of the anisotropic magnetoresistance (AMR) in (Ga,Mn)As is aimed atexploring the basic physical aspects of this relativistic transport effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Anisotropic Magnetoresistance components in (Ga,Mn)As|A. W. Rushforth,K. Výborný,C. S. King,K. W. Edmonds,R. P. Campion,C. T. Foxon,J. Wunderlich,A. C. Irvine,P. Vašek,V. Novák,K. Olejník,Jairo Sinova,T. Jungwirth,B. L. Gallagher###
(927484, 927484)
 Our experimental and theoretical study of the non-crystalline and crystallinecomponents of the anisotropic magnetoresistance (AMR) in (Ga,Mn)As is aimed atexploring the basic physical aspects of this relativistic transport effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Anisotropic Magnetoresistance components in (Ga,Mn)As|A. W. Rushforth,K. Výborný,C. S. King,K. W. Edmonds,R. P. Campion,C. T. Foxon,J. Wunderlich,A. C. Irvine,P. Vašek,V. Novák,K. Olejník,Jairo Sinova,T. Jungwirth,B. L. Gallagher###
(927544, 927544)
 Thenon-crystalline AMR reflects anisotropic lifetimes of the holes due topolarized Mn impurities while the crystalline AMR is associated with valenceband warping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

KKY
###Extensions to the Kondo lattice model to achieve realistic Curie temperatures and appropriate behavior of the resistivity for manganites|Martin Stier,Wolfgang Nolting###
(927947, 927949)
 Those arecalculated self-consistently via an interpolating self-energy model and amodified R<missing VAR>KKY technique using finite Hund coupling and quantum spins.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Extensions to the Kondo lattice model to achieve realistic Curie temperatures and appropriate behavior of the resistivity for manganites|Martin Stier,Wolfgang Nolting###
(928054, 928054)
 In the calculated phase diagram there areferromagnetic metal to paramagnetic insulator transitions, accompanied by aColossal Magnetoresistance (CMR) behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Extensions to the Kondo lattice model to achieve realistic Curie temperatures and appropriate behavior of the resistivity for manganites|Martin Stier,Wolfgang Nolting###
(928094, 928094)
 In the calculated phase diagram there areferromagnetic metal to paramagnetic insulator transitions, accompanied by aColossal Magnetoresistance (CMR) behavior.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magnetic effects at the interface between nonmagnetic oxides|A. Brinkman,M. Huijben,M. van Zalk,J. Huijben,U. Zeitler,J. C. Maan,W. G. van der Wiel,G. Rijnders,D. H. A. Blank,H. Hilgenkamp###
(928215, 928215)
 In analogy to this remarkableinterface-induced conductivity we show how, additionally, magnetism can beinduced at the interface between the otherwise nonmagnetic insulatingperovskites SrTiO3 and LaAlO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Magnetic effects at the interface between nonmagnetic oxides|A. Brinkman,M. Huijben,M. van Zalk,J. Huijben,U. Zeitler,J. C. Maan,W. G. van der Wiel,G. Rijnders,D. H. A. Blank,H. Hilgenkamp###
(928270, 928273)
 In analogy to this remarkableinterface-induced conductivity we show how, additionally, magnetism can beinduced at the interface between the otherwise nonmagnetic insulatingperovskites SrTiO3 and LaAlO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaAlO3
###Magnetic effects at the interface between nonmagnetic oxides|A. Brinkman,M. Huijben,M. van Zalk,J. Huijben,U. Zeitler,J. C. Maan,W. G. van der Wiel,G. Rijnders,D. H. A. Blank,H. Hilgenkamp###
(928277, 928280)
 In analogy to this remarkableinterface-induced conductivity we show how, additionally, magnetism can beinduced at the interface between the otherwise nonmagnetic insulatingperovskites SrTiO3 and LaAlO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Magnetic effects at the interface between nonmagnetic oxides|A. Brinkman,M. Huijben,M. van Zalk,J. Huijben,U. Zeitler,J. C. Maan,W. G. van der Wiel,G. Rijnders,D. H. A. Blank,H. Hilgenkamp###
(928325, 928325)
 At low temperatures, the sheet resistance reveals magnetichysteresis.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magnetic effects at the interface between nonmagnetic oxides|A. Brinkman,M. Huijben,M. van Zalk,J. Huijben,U. Zeitler,J. C. Maan,W. G. van der Wiel,G. Rijnders,D. H. A. Blank,H. Hilgenkamp###
(928390, 928390)
 In particular,the interplay between localized magnetic moments and the spin of itinerantconduction electrons in a solid gives rise to intriguing many-body effects suchas Ruderman-Kittel-Kasuya-Yosida (R<missing VAR>KKY) interactions, the Kondo effect, andcarrier-induced ferromagnetism in diluted magnetic semiconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Y
###Magnetic effects at the interface between nonmagnetic oxides|A. Brinkman,M. Huijben,M. van Zalk,J. Huijben,U. Zeitler,J. C. Maan,W. G. van der Wiel,G. Rijnders,D. H. A. Blank,H. Hilgenkamp###
(928460, 928460)
 In particular,the interplay between localized magnetic moments and the spin of itinerantconduction electrons in a solid gives rise to intriguing many-body effects suchas Ruderman-Kittel-Kasuya-Yosida (R<missing VAR>KKY) interactions, the Kondo effect, andcarrier-induced ferromagnetism in diluted magnetic semiconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Frequency combinations in the magnetoresistance oscillations spectrum of a linear chain of coupled orbits with a high scattering rate|David Vignolles,Alain Audouard,Vladimir N. Laukhin,Jérome Béard,Enric Canadell,Nataliya G. Spitsina,Eduard Yagubskii###
(928597, 928597)
 The oscillatory magnetoresistance spectrum of the organic metal(BEDO)5Ni(CN)4cdot3C2H4(OH)2 has been studied up to 50 T, inthe temperature range from 1.5 K to 4.2 K.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 50, 'T', 0],[46.0, 1.5, 'K', 0],[49.0, 4.2, 'K', 0]

O
###Frequency combinations in the magnetoresistance oscillations spectrum of a linear chain of coupled orbits with a high scattering rate|David Vignolles,Alain Audouard,Vladimir N. Laukhin,Jérome Béard,Enric Canadell,Nataliya G. Spitsina,Eduard Yagubskii###
(928600, 928600)
 The oscillatory magnetoresistance spectrum of the organic metal(BEDO)5Ni(CN)4cdot3C2H4(OH)2 has been studied up to 50 T, inthe temperature range from 1.5 K to 4.2 K.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 50, 'T', 0],[43.0, 1.5, 'K', 0],[46.0, 4.2, 'K', 0]

Ni(CN)4
###Frequency combinations in the magnetoresistance oscillations spectrum of a linear chain of coupled orbits with a high scattering rate|David Vignolles,Alain Audouard,Vladimir N. Laukhin,Jérome Béard,Enric Canadell,Nataliya G. Spitsina,Eduard Yagubskii###
(928603, 928608)
 The oscillatory magnetoresistance spectrum of the organic metal(BEDO)5Ni(CN)4cdot3C2H4(OH)2 has been studied up to 50 T, inthe temperature range from 1.5 K to 4.2 K.
Featurization terminated normally.
0,0,0,0,0,0.4444444444444444,0.4444444444444444,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 50, 'T', 0],[35.0, 1.5, 'K', 0],[38.0, 4.2, 'K', 0]

C2H4(OH)2
###Frequency combinations in the magnetoresistance oscillations spectrum of a linear chain of coupled orbits with a high scattering rate|David Vignolles,Alain Audouard,Vladimir N. Laukhin,Jérome Béard,Enric Canadell,Nataliya G. Spitsina,Eduard Yagubskii###
(928611, 928619)
 The oscillatory magnetoresistance spectrum of the organic metal(BEDO)5Ni(CN)4cdot3C2H4(OH)2 has been studied up to 50 T, inthe temperature range from 1.5 K to 4.2 K.
Featurization terminated normally.
0.6,0,0,0,0,0.2,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 50, 'T', 0],[24.0, 1.5, 'K', 0],[27.0, 4.2, 'K', 0]

In
###Frequency combinations in the magnetoresistance oscillations spectrum of a linear chain of coupled orbits with a high scattering rate|David Vignolles,Alain Audouard,Vladimir N. Laukhin,Jérome Béard,Enric Canadell,Nataliya G. Spitsina,Eduard Yagubskii###
(928649, 928649)
 In high magnetic field, its Fermisurface corresponds to a linear chain of quasi-two-dimensional orbits coupledby magnetic breakdown (M<missing VAR>B).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 50, 'T', 1],[6.0, 1.5, 'K', 1],[3.0, 4.2, 'K', 1]

B
###Frequency combinations in the magnetoresistance oscillations spectrum of a linear chain of coupled orbits with a high scattering rate|David Vignolles,Alain Audouard,Vladimir N. Laukhin,Jérome Béard,Enric Canadell,Nataliya G. Spitsina,Eduard Yagubskii###
(928696, 928696)
 In high magnetic field, its Fermisurface corresponds to a linear chain of quasi-two-dimensional orbits coupledby magnetic breakdown (M<missing VAR>B).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 50, 'T', 1],[53.0, 1.5, 'K', 1],[50.0, 4.2, 'K', 1]

B
###Frequency combinations in the magnetoresistance oscillations spectrum of a linear chain of coupled orbits with a high scattering rate|David Vignolles,Alain Audouard,Vladimir N. Laukhin,Jérome Béard,Enric Canadell,Nataliya G. Spitsina,Eduard Yagubskii###
(928732, 928732)
 The scattering rate consistently deduced from thedata relevant to the basic alpha and the M<missing VAR>B-induced beta orbits is verylarge which points to a significant reduction of the chemical potentialoscillation.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 50, 'T', 2],[89.0, 1.5, 'K', 2],[86.0, 4.2, 'K', 2]

Ni
###The Origin of Tunneling Anisotropic Magnetoresistance in Break Junctions|J. D. Burton,R. F. Sabirianov,J. P. Velev,O. N. Mryasov,E. Y. Tsymbal###
(928900, 928900)
 First-principles calculations of electron tunneling transport in Ni and Cobreak junctions reveal strong dependence of the conductance on themagnetization direction, an effect known as tunneling anisotropicmagnetoresistance (TAMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###The Origin of Tunneling Anisotropic Magnetoresistance in Break Junctions|J. D. Burton,R. F. Sabirianov,J. P. Velev,O. N. Mryasov,E. Y. Tsymbal###
(928904, 928904)
 First-principles calculations of electron tunneling transport in Ni and Cobreak junctions reveal strong dependence of the conductance on themagnetization direction, an effect known as tunneling anisotropicmagnetoresistance (TAMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###The Origin of Tunneling Anisotropic Magnetoresistance in Break Junctions|J. D. Burton,R. F. Sabirianov,J. P. Velev,O. N. Mryasov,E. Y. Tsymbal###
(929066, 929066)
 The energy andbroadening of these states is strongly affected by the magnetizationorientation due to spin-orbit coupling, causing TAMR to be sensitive to biasvoltage on a scale of a few m<missing VAR>V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.7Ca0.3MnO3
###Electrical transport and percolation in magnetoresistive manganite / insulating oxide composites: case of La0.7Ca0.3MnO3 / Mn3O4|B. Vertruyen,R. Cloots,M. Ausloos,J. -F. Fagnard,Ph. Vanderbemden###
(929190, 929196)
Electrical transport and percolation in magnetoresistive manganite / insulating oxide composites case of La0.7Ca0.3MnO3 / Mn3O4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[230.0, 0.2, 'at', 4],[246.0, 5, 'K', 4]

Mn3O4
###Electrical transport and percolation in magnetoresistive manganite / insulating oxide composites: case of La0.7Ca0.3MnO3 / Mn3O4|B. Vertruyen,R. Cloots,M. Ausloos,J. -F. Fagnard,Ph. Vanderbemden###
(929200, 929203)
Electrical transport and percolation in magnetoresistive manganite / insulating oxide composites case of La0.7Ca0.3MnO3 / Mn3O4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[223.0, 0.2, 'at', 4],[239.0, 5, 'K', 4]

La0.7Ca0.3MnO3
###Electrical transport and percolation in magnetoresistive manganite / insulating oxide composites: case of La0.7Ca0.3MnO3 / Mn3O4|B. Vertruyen,R. Cloots,M. Ausloos,J. -F. Fagnard,Ph. Vanderbemden###
(929233, 929239)
 We report the results of electrical resistivity measurements carried out onwell-sintered La0.7Ca0.3MnO3 / Mn3O4 composite samples with almost constantcomposition of the magnetoresistive manganite phase (La0.7Ca0.3MnO3).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[187.0, 0.2, 'at', 3],[203.0, 5, 'K', 3]

Mn3O4
###Electrical transport and percolation in magnetoresistive manganite / insulating oxide composites: case of La0.7Ca0.3MnO3 / Mn3O4|B. Vertruyen,R. Cloots,M. Ausloos,J. -F. Fagnard,Ph. Vanderbemden###
(929243, 929246)
 We report the results of electrical resistivity measurements carried out onwell-sintered La0.7Ca0.3MnO3 / Mn3O4 composite samples with almost constantcomposition of the magnetoresistive manganite phase (La0.7Ca0.3MnO3).
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[180.0, 0.2, 'at', 3],[196.0, 5, 'K', 3]

(La0.7Ca0.3MnO3)
###Electrical transport and percolation in magnetoresistive manganite / insulating oxide composites: case of La0.7Ca0.3MnO3 / Mn3O4|B. Vertruyen,R. Cloots,M. Ausloos,J. -F. Fagnard,Ph. Vanderbemden###
(929271, 929279)
 We report the results of electrical resistivity measurements carried out onwell-sintered La0.7Ca0.3MnO3 / Mn3O4 composite samples with almost constantcomposition of the magnetoresistive manganite phase (La0.7Ca0.3MnO3).
Featurization successful!
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 0.2, 'at', 3],[163.0, 5, 'K', 3]

La0.7Ca0.3MnO3
###Electrical transport and percolation in magnetoresistive manganite / insulating oxide composites: case of La0.7Ca0.3MnO3 / Mn3O4|B. Vertruyen,R. Cloots,M. Ausloos,J. -F. Fagnard,Ph. Vanderbemden###
(929299, 929305)
 Apercolation threshold (fc) occurs when the La0.7Ca0.3MnO3 volume fraction is 0.19.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 0.2, 'at', 2],[137.0, 5, 'K', 2]

La0.7Ca0.3MnO3
###Electrical transport and percolation in magnetoresistive manganite / insulating oxide composites: case of La0.7Ca0.3MnO3 / Mn3O4|B. Vertruyen,R. Cloots,M. Ausloos,J. -F. Fagnard,Ph. Vanderbemden###
(929339, 929345)
 The dependence of the electrical resistivity as a function ofLa0.7Ca0.3MnO3 volume fraction (fLCM<missing VAR>O) can be described by percolation-likephenomenological equations.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 0.2, 'at', 1],[97.0, 5, 'K', 1]

C
###Electrical transport and percolation in magnetoresistive manganite / insulating oxide composites: case of La0.7Ca0.3MnO3 / Mn3O4|B. Vertruyen,R. Cloots,M. Ausloos,J. -F. Fagnard,Ph. Vanderbemden###
(929354, 929354)
 The dependence of the electrical resistivity as a function ofLa0.7Ca0.3MnO3 volume fraction (fLCM<missing VAR>O) can be described by percolation-likephenomenological equations.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 0.2, 'at', 1],[88.0, 5, 'K', 1]

O
###Electrical transport and percolation in magnetoresistive manganite / insulating oxide composites: case of La0.7Ca0.3MnO3 / Mn3O4|B. Vertruyen,R. Cloots,M. Ausloos,J. -F. Fagnard,Ph. Vanderbemden###
(929356, 929356)
 The dependence of the electrical resistivity as a function ofLa0.7Ca0.3MnO3 volume fraction (fLCM<missing VAR>O) can be described by percolation-likephenomenological equations.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 0.2, 'at', 1],[86.0, 5, 'K', 1]

C
###Electrical transport and percolation in magnetoresistive manganite / insulating oxide composites: case of La0.7Ca0.3MnO3 / Mn3O4|B. Vertruyen,R. Cloots,M. Ausloos,J. -F. Fagnard,Ph. Vanderbemden###
(929388, 929388)
 Fitting the conducting regime (fLCM<missing VAR>O > fc) by thepercolation power law returns a critical exponent t<missing VAR> value of 2.0 /- 0.2 atroom temperature and 2.6 /-0.2 at 5 K.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 0.2, 'at', 0],[54.0, 5, 'K', 0]

O
###Electrical transport and percolation in magnetoresistive manganite / insulating oxide composites: case of La0.7Ca0.3MnO3 / Mn3O4|B. Vertruyen,R. Cloots,M. Ausloos,J. -F. Fagnard,Ph. Vanderbemden###
(929390, 929390)
 Fitting the conducting regime (fLCM<missing VAR>O > fc) by thepercolation power law returns a critical exponent t<missing VAR> value of 2.0 /- 0.2 atroom temperature and 2.6 /-0.2 at 5 K.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 0.2, 'at', 0],[52.0, 5, 'K', 0]

In
###Organic Spintronics|W. J. M. Naber,S. Faez,W. G. van der Wiel###
(929503, 929503)
 In this paper we review the recent field of organic spintronics, whereorganic materials are applied as a medium to transport and controlspin-polarized signals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La
###Ferromagnetic/superconducting bilayer structure: A model system for spin diffusion length estimation|S. Soltan,J. Albrecht,H. --U. Habermeier###
(929863, 929863)
Epitaxial bilayer structures of half metal--colossal magnetoresistiveLamathrm2/3Camathrm1/3MnOmathrm3 (HM<missing VAR>--CMR) andhigh--Tmathrmc superconductingYBamathrm2Cumathrm3Omathrm7-delta(HT<missing VAR>SC) are grown onSrTiO3 (100) single--crystalline substrates using pulsed laser deposition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[254.0, 10, 'nm', 3]

Ca
###Ferromagnetic/superconducting bilayer structure: A model system for spin diffusion length estimation|S. Soltan,J. Albrecht,H. --U. Habermeier###
(929868, 929868)
Epitaxial bilayer structures of half metal--colossal magnetoresistiveLamathrm2/3Camathrm1/3MnOmathrm3 (HM<missing VAR>--CMR) andhigh--Tmathrmc superconductingYBamathrm2Cumathrm3Omathrm7-delta(HT<missing VAR>SC) are grown onSrTiO3 (100) single--crystalline substrates using pulsed laser deposition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[249.0, 10, 'nm', 3]

MnO
###Ferromagnetic/superconducting bilayer structure: A model system for spin diffusion length estimation|S. Soltan,J. Albrecht,H. --U. Habermeier###
(929873, 929874)
Epitaxial bilayer structures of half metal--colossal magnetoresistiveLamathrm2/3Camathrm1/3MnOmathrm3 (HM<missing VAR>--CMR) andhigh--Tmathrmc superconductingYBamathrm2Cumathrm3Omathrm7-delta(HT<missing VAR>SC) are grown onSrTiO3 (100) single--crystalline substrates using pulsed laser deposition.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[243.0, 10, 'nm', 3]

H
###Ferromagnetic/superconducting bilayer structure: A model system for spin diffusion length estimation|S. Soltan,J. Albrecht,H. --U. Habermeier###
(929879, 929879)
Epitaxial bilayer structures of half metal--colossal magnetoresistiveLamathrm2/3Camathrm1/3MnOmathrm3 (HM<missing VAR>--CMR) andhigh--Tmathrmc superconductingYBamathrm2Cumathrm3Omathrm7-delta(HT<missing VAR>SC) are grown onSrTiO3 (100) single--crystalline substrates using pulsed laser deposition.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[238.0, 10, 'nm', 3]

C
###Ferromagnetic/superconducting bilayer structure: A model system for spin diffusion length estimation|S. Soltan,J. Albrecht,H. --U. Habermeier###
(929883, 929883)
Epitaxial bilayer structures of half metal--colossal magnetoresistiveLamathrm2/3Camathrm1/3MnOmathrm3 (HM<missing VAR>--CMR) andhigh--Tmathrmc superconductingYBamathrm2Cumathrm3Omathrm7-delta(HT<missing VAR>SC) are grown onSrTiO3 (100) single--crystalline substrates using pulsed laser deposition.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[234.0, 10, 'nm', 3]

YBa
###Ferromagnetic/superconducting bilayer structure: A model system for spin diffusion length estimation|S. Soltan,J. Albrecht,H. --U. Habermeier###
(929901, 929902)
Epitaxial bilayer structures of half metal--colossal magnetoresistiveLamathrm2/3Camathrm1/3MnOmathrm3 (HM<missing VAR>--CMR) andhigh--Tmathrmc superconductingYBamathrm2Cumathrm3Omathrm7-delta(HT<missing VAR>SC) are grown onSrTiO3 (100) single--crystalline substrates using pulsed laser deposition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[215.0, 10, 'nm', 3]

Cu
###Ferromagnetic/superconducting bilayer structure: A model system for spin diffusion length estimation|S. Soltan,J. Albrecht,H. --U. Habermeier###
(929905, 929905)
Epitaxial bilayer structures of half metal--colossal magnetoresistiveLamathrm2/3Camathrm1/3MnOmathrm3 (HM<missing VAR>--CMR) andhigh--Tmathrmc superconductingYBamathrm2Cumathrm3Omathrm7-delta(HT<missing VAR>SC) are grown onSrTiO3 (100) single--crystalline substrates using pulsed laser deposition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[212.0, 10, 'nm', 3]

O
###Ferromagnetic/superconducting bilayer structure: A model system for spin diffusion length estimation|S. Soltan,J. Albrecht,H. --U. Habermeier###
(929908, 929908)
Epitaxial bilayer structures of half metal--colossal magnetoresistiveLamathrm2/3Camathrm1/3MnOmathrm3 (HM<missing VAR>--CMR) andhigh--Tmathrmc superconductingYBamathrm2Cumathrm3Omathrm7-delta(HT<missing VAR>SC) are grown onSrTiO3 (100) single--crystalline substrates using pulsed laser deposition.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[209.0, 10, 'nm', 3]

H
###Ferromagnetic/superconducting bilayer structure: A model system for spin diffusion length estimation|S. Soltan,J. Albrecht,H. --U. Habermeier###
(929914, 929914)
Epitaxial bilayer structures of half metal--colossal magnetoresistiveLamathrm2/3Camathrm1/3MnOmathrm3 (HM<missing VAR>--CMR) andhigh--Tmathrmc superconductingYBamathrm2Cumathrm3Omathrm7-delta(HT<missing VAR>SC) are grown onSrTiO3 (100) single--crystalline substrates using pulsed laser deposition.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[203.0, 10, 'nm', 3]

C
###Ferromagnetic/superconducting bilayer structure: A model system for spin diffusion length estimation|S. Soltan,J. Albrecht,H. --U. Habermeier###
(929917, 929917)
Epitaxial bilayer structures of half metal--colossal magnetoresistiveLamathrm2/3Camathrm1/3MnOmathrm3 (HM<missing VAR>--CMR) andhigh--Tmathrmc superconductingYBamathrm2Cumathrm3Omathrm7-delta(HT<missing VAR>SC) are grown onSrTiO3 (100) single--crystalline substrates using pulsed laser deposition.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[200.0, 10, 'nm', 3]

SrTiO3
###Ferromagnetic/superconducting bilayer structure: A model system for spin diffusion length estimation|S. Soltan,J. Albrecht,H. --U. Habermeier###
(929927, 929930)
Epitaxial bilayer structures of half metal--colossal magnetoresistiveLamathrm2/3Camathrm1/3MnOmathrm3 (HM<missing VAR>--CMR) andhigh--Tmathrmc superconductingYBamathrm2Cumathrm3Omathrm7-delta(HT<missing VAR>SC) are grown onSrTiO3 (100) single--crystalline substrates using pulsed laser deposition.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[187.0, 10, 'nm', 3]

H
###Ferromagnetic/superconducting bilayer structure: A model system for spin diffusion length estimation|S. Soltan,J. Albrecht,H. --U. Habermeier###
(929994, 929994)
 Using the HM<missing VAR>--CMRlayer as an electrode for spin polarized electrons, we discuss the role of spinpolarized self injection into the HT<missing VAR>SC layer.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 10, 'nm', 1]

C
###Ferromagnetic/superconducting bilayer structure: A model system for spin diffusion length estimation|S. Soltan,J. Albrecht,H. --U. Habermeier###
(929998, 929998)
 Using the HM<missing VAR>--CMRlayer as an electrode for spin polarized electrons, we discuss the role of spinpolarized self injection into the HT<missing VAR>SC layer.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 10, 'nm', 1]

H
###Ferromagnetic/superconducting bilayer structure: A model system for spin diffusion length estimation|S. Soltan,J. Albrecht,H. --U. Habermeier###
(930043, 930043)
 Using the HM<missing VAR>--CMRlayer as an electrode for spin polarized electrons, we discuss the role of spinpolarized self injection into the HT<missing VAR>SC layer.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 10, 'nm', 1]

SC
###Ferromagnetic/superconducting bilayer structure: A model system for spin diffusion length estimation|S. Soltan,J. Albrecht,H. --U. Habermeier###
(930045, 930046)
 Using the HM<missing VAR>--CMRlayer as an electrode for spin polarized electrons, we discuss the role of spinpolarized self injection into the HT<missing VAR>SC layer.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 10, 'nm', 1]

F
###Ferromagnetic/superconducting bilayer structure: A model system for spin diffusion length estimation|S. Soltan,J. Albrecht,H. --U. Habermeier###
(930091, 930091)
 The experimental results are ingood agreement with a presented theoretical estimation, where the spindiffusion length ximathrm FM<missing VAR> is found to be in the range ofximathrmFM<missing VAR> approx 10 nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 10, 'nm', 0]

F
###Ferromagnetic/superconducting bilayer structure: A model system for spin diffusion length estimation|S. Soltan,J. Albrecht,H. --U. Habermeier###
(930113, 930113)
 The experimental results are ingood agreement with a presented theoretical estimation, where the spindiffusion length ximathrm FM<missing VAR> is found to be in the range ofximathrmFM<missing VAR> approx 10 nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 10, 'nm', 0]

At
###Macroscopic coherence effects in a mesoscopic system: Weak localization of thin silver films in an undergraduate lab|A. D. Beyer,M. Koesters,K. G. Libbrecht,E. D. Black###
(930231, 930231)
 At low temperatures, the inelastic dephasinglength for electrons, L<missing VAR>phi, exceeds the thickness of the film (L<missing VAR>phigg a), and the films are then quasi-2D<missing VAR> in nature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Macroscopic coherence effects in a mesoscopic system: Weak localization of thin silver films in an undergraduate lab|A. D. Beyer,M. Koesters,K. G. Libbrecht,E. D. Black###
(930299, 930299)
 In this situation, theorypredicts specific corrections to the Drude conductivity due to coherentinterference between conducting electrons wavefunctions, a macroscopicallyobservable effect known as weak localization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin-polarized transport through weakly coupled double quantum dots in the Coulomb-blockade regime|I. Weymann###
(930519, 930519)
 In the Coulomb blockade regime theelectric current flows due to third-order tunneling, while the second-ordersingle-barrier processes have indirect impact on the current by changing theoccupation probabilities of the double dot system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ba2
###Magnetic Coupling and Long-Range Order in the Spin-Chain Sulphide Ba2cos3|Andrew D. J. Barnes,Thomas Baikie,Vincent Hardy,Marie-Bernadette Lepetit,Antoine Maignan,Nigel A. Young,M. Grazia Francesconi###
(930805, 930806)
Magnetic Coupling and Long-Range Order in the Spin-Chain Sulphide Ba2cos3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magnetic Coupling and Long-Range Order in the Spin-Chain Sulphide Ba2cos3|Andrew D. J. Barnes,Thomas Baikie,Vincent Hardy,Marie-Bernadette Lepetit,Antoine Maignan,Nigel A. Young,M. Grazia Francesconi###
(930811, 930811)
 In this paper, we report on the magnetic properties of Ba2CoS3, a spin-chaincompound recently found to be the first Co2 containing one-dimensionalsulphide to show metallic-like conductivity and negative magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ba2CoS3
###Magnetic Coupling and Long-Range Order in the Spin-Chain Sulphide Ba2cos3|Andrew D. J. Barnes,Thomas Baikie,Vincent Hardy,Marie-Bernadette Lepetit,Antoine Maignan,Nigel A. Young,M. Grazia Francesconi###
(930832, 930836)
 In this paper, we report on the magnetic properties of Ba2CoS3, a spin-chaincompound recently found to be the first Co2 containing one-dimensionalsulphide to show metallic-like conductivity and negative magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co2
###Magnetic Coupling and Long-Range Order in the Spin-Chain Sulphide Ba2cos3|Andrew D. J. Barnes,Thomas Baikie,Vincent Hardy,Marie-Bernadette Lepetit,Antoine Maignan,Nigel A. Young,M. Grazia Francesconi###
(930860, 930861)
 In this paper, we report on the magnetic properties of Ba2CoS3, a spin-chaincompound recently found to be the first Co2 containing one-dimensionalsulphide to show metallic-like conductivity and negative magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co2
###Magnetic Coupling and Long-Range Order in the Spin-Chain Sulphide Ba2cos3|Andrew D. J. Barnes,Thomas Baikie,Vincent Hardy,Marie-Bernadette Lepetit,Antoine Maignan,Nigel A. Young,M. Grazia Francesconi###
(930945, 930946)
 Wecarried out an in-depth experimental investigation of the local structure ofthe cobalt atoms, and ab-initio calculations of the resulting electronicconfiguration of Co2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaInAs/InP
###Andreev reflection and strongly enhanced magnetoresistance oscillations in GaInAs/InP heterostructures with superconducting contacts|I. E. Batov,Th. Schapers,N. M. Chtchelkatchev,H. Hardtdegen,A. V. Ustinov###
(931102, 931107)
Andreev reflection and strongly enhanced magnetoresistance oscillations in GaInAs/InP heterostructures with superconducting contacts.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

GaInAs/InP
###Andreev reflection and strongly enhanced magnetoresistance oscillations in GaInAs/InP heterostructures with superconducting contacts|I. E. Batov,Th. Schapers,N. M. Chtchelkatchev,H. Hardtdegen,A. V. Ustinov###
(931143, 931148)
 We study the magnetotransport in small hybrid junctions formed byhigh-mobility GaInAs/InP heterostructures coupled to superconducting (S) andnormal metal (N) terminals.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

(S)
###Andreev reflection and strongly enhanced magnetoresistance oscillations in GaInAs/InP heterostructures with superconducting contacts|I. E. Batov,Th. Schapers,N. M. Chtchelkatchev,H. Hardtdegen,A. V. Ustinov###
(931158, 931160)
 We study the magnetotransport in small hybrid junctions formed byhigh-mobility GaInAs/InP heterostructures coupled to superconducting (S) andnormal metal (N) terminals.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(N)
###Andreev reflection and strongly enhanced magnetoresistance oscillations in GaInAs/InP heterostructures with superconducting contacts|I. E. Batov,Th. Schapers,N. M. Chtchelkatchev,H. Hardtdegen,A. V. Ustinov###
(931169, 931171)
 We study the magnetotransport in small hybrid junctions formed byhigh-mobility GaInAs/InP heterostructures coupled to superconducting (S) andnormal metal (N) terminals.
Featurization successful!
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaInAs/InP
###Andreev reflection and strongly enhanced magnetoresistance oscillations in GaInAs/InP heterostructures with superconducting contacts|I. E. Batov,Th. Schapers,N. M. Chtchelkatchev,H. Hardtdegen,A. V. Ustinov###
(931210, 931215)
 Highly transmissive superconducting contacts to atwo-dimensional electron gas (2DEG) located in a GaInAs/InP heterostructure arerealized by using a Au/NbN layer system.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Au/NbN
###Andreev reflection and strongly enhanced magnetoresistance oscillations in GaInAs/InP heterostructures with superconducting contacts|I. E. Batov,Th. Schapers,N. M. Chtchelkatchev,H. Hardtdegen,A. V. Ustinov###
(931230, 931233)
 Highly transmissive superconducting contacts to atwo-dimensional electron gas (2DEG) located in a GaInAs/InP heterostructure arerealized by using a Au/NbN layer system.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

S
###Andreev reflection and strongly enhanced magnetoresistance oscillations in GaInAs/InP heterostructures with superconducting contacts|I. E. Batov,Th. Schapers,N. M. Chtchelkatchev,H. Hardtdegen,A. V. Ustinov###
(931248, 931248)
 The magnetoresistance of the S/2DEG/Nstructures is studied as a function of dc bias current and temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Andreev reflection and strongly enhanced magnetoresistance oscillations in GaInAs/InP heterostructures with superconducting contacts|I. E. Batov,Th. Schapers,N. M. Chtchelkatchev,H. Hardtdegen,A. V. Ustinov###
(931255, 931255)
 The magnetoresistance of the S/2DEG/Nstructures is studied as a function of dc bias current and temperature.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Andreev reflection and strongly enhanced magnetoresistance oscillations in GaInAs/InP heterostructures with superconducting contacts|I. E. Batov,Th. Schapers,N. M. Chtchelkatchev,H. Hardtdegen,A. V. Ustinov###
(931283, 931283)
 At biascurrents below a critical value, the resistance of the S/2DEG/N structuresdevelops a strong oscillatory dependence on the magnetic field, with anamplitude of the oscillations considerably larger than that of the referenceN/2DEG/N structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Andreev reflection and strongly enhanced magnetoresistance oscillations in GaInAs/InP heterostructures with superconducting contacts|I. E. Batov,Th. Schapers,N. M. Chtchelkatchev,H. Hardtdegen,A. V. Ustinov###
(931307, 931307)
 At biascurrents below a critical value, the resistance of the S/2DEG/N structuresdevelops a strong oscillatory dependence on the magnetic field, with anamplitude of the oscillations considerably larger than that of the referenceN/2DEG/N structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Andreev reflection and strongly enhanced magnetoresistance oscillations in GaInAs/InP heterostructures with superconducting contacts|I. E. Batov,Th. Schapers,N. M. Chtchelkatchev,H. Hardtdegen,A. V. Ustinov###
(931314, 931314)
 At biascurrents below a critical value, the resistance of the S/2DEG/N structuresdevelops a strong oscillatory dependence on the magnetic field, with anamplitude of the oscillations considerably larger than that of the referenceN/2DEG/N structures.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Andreev reflection and strongly enhanced magnetoresistance oscillations in GaInAs/InP heterostructures with superconducting contacts|I. E. Batov,Th. Schapers,N. M. Chtchelkatchev,H. Hardtdegen,A. V. Ustinov###
(931366, 931366)
 At biascurrents below a critical value, the resistance of the S/2DEG/N structuresdevelops a strong oscillatory dependence on the magnetic field, with anamplitude of the oscillations considerably larger than that of the referenceN/2DEG/N structures.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Andreev reflection and strongly enhanced magnetoresistance oscillations in GaInAs/InP heterostructures with superconducting contacts|I. E. Batov,Th. Schapers,N. M. Chtchelkatchev,H. Hardtdegen,A. V. Ustinov###
(931373, 931373)
 At biascurrents below a critical value, the resistance of the S/2DEG/N structuresdevelops a strong oscillatory dependence on the magnetic field, with anamplitude of the oscillations considerably larger than that of the referenceN/2DEG/N structures.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga0.95
###Magnetotransport properties of strained (Ga0.95, Mn0.05)As epilayers close to the metal-insulator transition: Description using Aronov-Altshuler three-dimensional scaling theory|J. Honolka,S. Masmanidis,H. X. Tang,D. D. Awschalom,M. L. Roukes###
(932081, 932082)
Magnetotransport properties of strained (Ga0.95, Mn0.05)As epilayers close to the metal-insulator transition Description using Aronov-Altshuler three-dimensional scaling theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 30, 'mK', 1]

Mn0.05
###Magnetotransport properties of strained (Ga0.95, Mn0.05)As epilayers close to the metal-insulator transition: Description using Aronov-Altshuler three-dimensional scaling theory|J. Honolka,S. Masmanidis,H. X. Tang,D. D. Awschalom,M. L. Roukes###
(932085, 932086)
Magnetotransport properties of strained (Ga0.95, Mn0.05)As epilayers close to the metal-insulator transition Description using Aronov-Altshuler three-dimensional scaling theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 30, 'mK', 1]

As
###Magnetotransport properties of strained (Ga0.95, Mn0.05)As epilayers close to the metal-insulator transition: Description using Aronov-Altshuler three-dimensional scaling theory|J. Honolka,S. Masmanidis,H. X. Tang,D. D. Awschalom,M. L. Roukes###
(932088, 932088)
Magnetotransport properties of strained (Ga0.95, Mn0.05)As epilayers close to the metal-insulator transition Description using Aronov-Altshuler three-dimensional scaling theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 30, 'mK', 1]

Ga0.95
###Magnetotransport properties of strained (Ga0.95, Mn0.05)As epilayers close to the metal-insulator transition: Description using Aronov-Altshuler three-dimensional scaling theory|J. Honolka,S. Masmanidis,H. X. Tang,D. D. Awschalom,M. L. Roukes###
(932155, 932156)
 The magnitude of the anisotropic magnetoresistance (AMR) and the longitudinalresistance in compressively strained (Ga0.95, Mn0.05)As epilayers were measuredfor the first time down to temperatures as low as 30 mK.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 30, 'mK', 0]

Mn0.05
###Magnetotransport properties of strained (Ga0.95, Mn0.05)As epilayers close to the metal-insulator transition: Description using Aronov-Altshuler three-dimensional scaling theory|J. Honolka,S. Masmanidis,H. X. Tang,D. D. Awschalom,M. L. Roukes###
(932159, 932160)
 The magnitude of the anisotropic magnetoresistance (AMR) and the longitudinalresistance in compressively strained (Ga0.95, Mn0.05)As epilayers were measuredfor the first time down to temperatures as low as 30 mK.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 30, 'mK', 0]

As
###Magnetotransport properties of strained (Ga0.95, Mn0.05)As epilayers close to the metal-insulator transition: Description using Aronov-Altshuler three-dimensional scaling theory|J. Honolka,S. Masmanidis,H. X. Tang,D. D. Awschalom,M. L. Roukes###
(932162, 932162)
 The magnitude of the anisotropic magnetoresistance (AMR) and the longitudinalresistance in compressively strained (Ga0.95, Mn0.05)As epilayers were measuredfor the first time down to temperatures as low as 30 mK.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 30, 'mK', 0]

K
###Magnetotransport properties of strained (Ga0.95, Mn0.05)As epilayers close to the metal-insulator transition: Description using Aronov-Altshuler three-dimensional scaling theory|J. Honolka,S. Masmanidis,H. X. Tang,D. D. Awschalom,M. L. Roukes###
(932201, 932201)
 Below temperatures of3K the conductivity decreases  T<missing VAR>1/3 over two orders of magnitude intemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 30, 'mK', 1]

At
###Magnetotransport properties of strained (Ga0.95, Mn0.05)As epilayers close to the metal-insulator transition: Description using Aronov-Altshuler three-dimensional scaling theory|J. Honolka,S. Masmanidis,H. X. Tang,D. D. Awschalom,M. L. Roukes###
(932332, 932332)
 At lowest temperatures adecrease in the AMR effect is observed, which is assigned to changes in thecoupling between the remaining itinerant carriers and the local Mn 5/2-spinmoments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 30, 'mK', 4]

Mn
###Magnetotransport properties of strained (Ga0.95, Mn0.05)As epilayers close to the metal-insulator transition: Description using Aronov-Altshuler three-dimensional scaling theory|J. Honolka,S. Masmanidis,H. X. Tang,D. D. Awschalom,M. L. Roukes###
(932391, 932391)
 At lowest temperatures adecrease in the AMR effect is observed, which is assigned to changes in thecoupling between the remaining itinerant carriers and the local Mn 5/2-spinmoments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[201.0, 30, 'mK', 4]

La0.67Ca0.33MnO3
###Transport properties of microstructured ultrathin films of La0.67Ca0.33MnO3 on SrTiO3|C. Beekman,I. Komissarov,M. Hesselberth,J. Aarts###
(932425, 932431)
Transport properties of microstructured ultrathin films of La0.67Ca0.33MnO3 on SrTiO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.066,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.134,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 8, 'nm', 1],[287.0, 150, 'K', 6]

SrTiO3
###Transport properties of microstructured ultrathin films of La0.67Ca0.33MnO3 on SrTiO3|C. Beekman,I. Komissarov,M. Hesselberth,J. Aarts###
(932435, 932438)
Transport properties of microstructured ultrathin films of La0.67Ca0.33MnO3 on SrTiO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 8, 'nm', 1],[280.0, 150, 'K', 6]

La0.67Ca0.33MnO3
###Transport properties of microstructured ultrathin films of La0.67Ca0.33MnO3 on SrTiO3|C. Beekman,I. Komissarov,M. Hesselberth,J. Aarts###
(932461, 932467)
 We have investigated the electrical transport properties of 8 nm thickLa0.67Ca0.33MnO3 films, sputter-deposited on SrTiO3 (ST<missing VAR>O), and etched into 5micrometer-wide bridges by Ar-ion etching.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.066,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.134,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 8, 'nm', 0],[251.0, 150, 'K', 5]

SrTiO3
###Transport properties of microstructured ultrathin films of La0.67Ca0.33MnO3 on SrTiO3|C. Beekman,I. Komissarov,M. Hesselberth,J. Aarts###
(932478, 932481)
 We have investigated the electrical transport properties of 8 nm thickLa0.67Ca0.33MnO3 films, sputter-deposited on SrTiO3 (ST<missing VAR>O), and etched into 5micrometer-wide bridges by Ar-ion etching.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 8, 'nm', 0],[237.0, 150, 'K', 5]

S
###Transport properties of microstructured ultrathin films of La0.67Ca0.33MnO3 on SrTiO3|C. Beekman,I. Komissarov,M. Hesselberth,J. Aarts###
(932484, 932484)
 We have investigated the electrical transport properties of 8 nm thickLa0.67Ca0.33MnO3 films, sputter-deposited on SrTiO3 (ST<missing VAR>O), and etched into 5micrometer-wide bridges by Ar-ion etching.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 8, 'nm', 0],[234.0, 150, 'K', 5]

O
###Transport properties of microstructured ultrathin films of La0.67Ca0.33MnO3 on SrTiO3|C. Beekman,I. Komissarov,M. Hesselberth,J. Aarts###
(932486, 932486)
 We have investigated the electrical transport properties of 8 nm thickLa0.67Ca0.33MnO3 films, sputter-deposited on SrTiO3 (ST<missing VAR>O), and etched into 5micrometer-wide bridges by Ar-ion etching.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 8, 'nm', 0],[232.0, 150, 'K', 5]

Ar
###Transport properties of microstructured ultrathin films of La0.67Ca0.33MnO3 on SrTiO3|C. Beekman,I. Komissarov,M. Hesselberth,J. Aarts###
(932507, 932507)
 We have investigated the electrical transport properties of 8 nm thickLa0.67Ca0.33MnO3 films, sputter-deposited on SrTiO3 (ST<missing VAR>O), and etched into 5micrometer-wide bridges by Ar-ion etching.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 8, 'nm', 0],[211.0, 150, 'K', 5]

S
###Transport properties of microstructured ultrathin films of La0.67Ca0.33MnO3 on SrTiO3|C. Beekman,I. Komissarov,M. Hesselberth,J. Aarts###
(932543, 932543)
 We find that even slight overetchingof the film leads to conductance of the ST<missing VAR>O substrate, and asymmetric andnon-linear current-voltage (I-V) characteristics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 8, 'nm', 1],[175.0, 150, 'K', 4]

O
###Transport properties of microstructured ultrathin films of La0.67Ca0.33MnO3 on SrTiO3|C. Beekman,I. Komissarov,M. Hesselberth,J. Aarts###
(932545, 932545)
 We find that even slight overetchingof the film leads to conductance of the ST<missing VAR>O substrate, and asymmetric andnon-linear current-voltage (I-V) characteristics.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 8, 'nm', 1],[173.0, 150, 'K', 4]

I
###Transport properties of microstructured ultrathin films of La0.67Ca0.33MnO3 on SrTiO3|C. Beekman,I. Komissarov,M. Hesselberth,J. Aarts###
(932566, 932566)
 We find that even slight overetchingof the film leads to conductance of the ST<missing VAR>O substrate, and asymmetric andnon-linear current-voltage (I-V) characteristics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 8, 'nm', 1],[152.0, 150, 'K', 4]

V
###Transport properties of microstructured ultrathin films of La0.67Ca0.33MnO3 on SrTiO3|C. Beekman,I. Komissarov,M. Hesselberth,J. Aarts###
(932568, 932568)
 We find that even slight overetchingof the film leads to conductance of the ST<missing VAR>O substrate, and asymmetric andnon-linear current-voltage (I-V) characteristics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 8, 'nm', 1],[150.0, 150, 'K', 4]

I
###Transport properties of microstructured ultrathin films of La0.67Ca0.33MnO3 on SrTiO3|C. Beekman,I. Komissarov,M. Hesselberth,J. Aarts###
(932612, 932612)
The I-V characteristics of the bridges are then fully linear over a large rangeof current densities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 8, 'nm', 3],[106.0, 150, 'K', 2]

V
###Transport properties of microstructured ultrathin films of La0.67Ca0.33MnO3 on SrTiO3|C. Beekman,I. Komissarov,M. Hesselberth,J. Aarts###
(932614, 932614)
The I-V characteristics of the bridges are then fully linear over a large rangeof current densities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 8, 'nm', 3],[104.0, 150, 'K', 2]

O
###Transport properties of microstructured ultrathin films of La0.67Ca0.33MnO3 on SrTiO3|C. Beekman,I. Komissarov,M. Hesselberth,J. Aarts###
(932668, 932668)
 We find colossal magnetoresistance properties typical forstrained LCMO on ST<missing VAR>O but no signature of non-linear effects (so-calledelectroresistance) connected to electronic inhomogeneites.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[212.0, 8, 'nm', 4],[50.0, 150, 'K', 1]

S
###Transport properties of microstructured ultrathin films of La0.67Ca0.33MnO3 on SrTiO3|C. Beekman,I. Komissarov,M. Hesselberth,J. Aarts###
(932672, 932672)
 We find colossal magnetoresistance properties typical forstrained LCMO on ST<missing VAR>O but no signature of non-linear effects (so-calledelectroresistance) connected to electronic inhomogeneites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[216.0, 8, 'nm', 4],[46.0, 150, 'K', 1]

O
###Transport properties of microstructured ultrathin films of La0.67Ca0.33MnO3 on SrTiO3|C. Beekman,I. Komissarov,M. Hesselberth,J. Aarts###
(932674, 932674)
 We find colossal magnetoresistance properties typical forstrained LCMO on ST<missing VAR>O but no signature of non-linear effects (so-calledelectroresistance) connected to electronic inhomogeneites.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[218.0, 8, 'nm', 4],[44.0, 150, 'K', 1]

In
###Transport properties of microstructured ultrathin films of La0.67Ca0.33MnO3 on SrTiO3|C. Beekman,I. Komissarov,M. Hesselberth,J. Aarts###
(932708, 932708)
 In the metallicstate below 150 K, the highest current densities lead to heating effects andnon-linear I-V characteristics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[252.0, 8, 'nm', 5],[10.0, 150, 'K', 0]

I
###Transport properties of microstructured ultrathin films of La0.67Ca0.33MnO3 on SrTiO3|C. Beekman,I. Komissarov,M. Hesselberth,J. Aarts###
(932744, 932744)
 In the metallicstate below 150 K, the highest current densities lead to heating effects andnon-linear I-V characteristics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[288.0, 8, 'nm', 5],[26.0, 150, 'K', 0]

V
###Transport properties of microstructured ultrathin films of La0.67Ca0.33MnO3 on SrTiO3|C. Beekman,I. Komissarov,M. Hesselberth,J. Aarts###
(932746, 932746)
 In the metallicstate below 150 K, the highest current densities lead to heating effects andnon-linear I-V characteristics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[290.0, 8, 'nm', 5],[28.0, 150, 'K', 0]

Mo
###Effect of Mo doping for the Mn site in the ferromagnetic manganite La0.7Ca0.3MnO3|G. Narsinga Rao,J. W. Chen###
(932763, 932763)
Effect of Mo doping for the Mn site in the ferromagnetic manganite La0.7Ca0.3MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[228.0, 0.05, 'was', 5]

Mn
###Effect of Mo doping for the Mn site in the ferromagnetic manganite La0.7Ca0.3MnO3|G. Narsinga Rao,J. W. Chen###
(932771, 932771)
Effect of Mo doping for the Mn site in the ferromagnetic manganite La0.7Ca0.3MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[220.0, 0.05, 'was', 5]

La0.7Ca0.3MnO3
###Effect of Mo doping for the Mn site in the ferromagnetic manganite La0.7Ca0.3MnO3|G. Narsinga Rao,J. W. Chen###
(932783, 932789)
Effect of Mo doping for the Mn site in the ferromagnetic manganite La0.7Ca0.3MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[202.0, 0.05, 'was', 5]

Mo
###Effect of Mo doping for the Mn site in the ferromagnetic manganite La0.7Ca0.3MnO3|G. Narsinga Rao,J. W. Chen###
(932810, 932810)
 The structure, electronic, and magnetic properties of the Mo-doped perovskiteLa0.7Ca0.3Mn1-xMoxO3 (x<missing VAR> < 0.1) have been studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 0.05, 'was', 4]

La0.7Ca0.3Mn1-x
###Effect of Mo doping for the Mn site in the ferromagnetic manganite La0.7Ca0.3MnO3|G. Narsinga Rao,J. W. Chen###
(932817, 932824)
 The structure, electronic, and magnetic properties of the Mo-doped perovskiteLa0.7Ca0.3Mn1-xMoxO3 (x<missing VAR> < 0.1) have been studied.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[167.0, 0.05, 'was', 4]

O3
###Effect of Mo doping for the Mn site in the ferromagnetic manganite La0.7Ca0.3MnO3|G. Narsinga Rao,J. W. Chen###
(932826, 932827)
 The structure, electronic, and magnetic properties of the Mo-doped perovskiteLa0.7Ca0.3Mn1-xMoxO3 (x<missing VAR> < 0.1) have been studied.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 0.05, 'was', 4]

Mo
###Effect of Mo doping for the Mn site in the ferromagnetic manganite La0.7Ca0.3MnO3|G. Narsinga Rao,J. W. Chen###
(932867, 932867)
 A significant increase inresistivity and lattice parameters were observed with Mo doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 0.05, 'was', 3]

Tc
###Effect of Mo doping for the Mn site in the ferromagnetic manganite La0.7Ca0.3MnO3|G. Narsinga Rao,J. W. Chen###
(932887, 932887)
 A marginaldecrease in the Curie temperature Tc and the associated metal-insulatortransition Tp were observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 0.05, 'was', 2]

Tc
###Effect of Mo doping for the Mn site in the ferromagnetic manganite La0.7Ca0.3MnO3|G. Narsinga Rao,J. W. Chen###
(932967, 932967)
 Enhancement in magnetoresistance atnear Tc in the Mo-doped compounds with an optimum doping value x<missing VAR>  0.05 wasobserved.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 0.05, 'was', 0]

Mo
###Effect of Mo doping for the Mn site in the ferromagnetic manganite La0.7Ca0.3MnO3|G. Narsinga Rao,J. W. Chen###
(932973, 932973)
 Enhancement in magnetoresistance atnear Tc in the Mo-doped compounds with an optimum doping value x<missing VAR>  0.05 wasobserved.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 0.05, 'was', 0]

Mn2
###Effect of Mo doping for the Mn site in the ferromagnetic manganite La0.7Ca0.3MnO3|G. Narsinga Rao,J. W. Chen###
(933020, 933021)
 The overall experimental results can be explained by considering theinduced Mn2 ions with Mo6 in the Mo-doped systems, with the strong FM<missing VAR>coupling between Mn4/2- O - Mn3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 0.05, 'was', 1]

Mo6
###Effect of Mo doping for the Mn site in the ferromagnetic manganite La0.7Ca0.3MnO3|G. Narsinga Rao,J. W. Chen###
(933027, 933028)
 The overall experimental results can be explained by considering theinduced Mn2 ions with Mo6 in the Mo-doped systems, with the strong FM<missing VAR>coupling between Mn4/2- O - Mn3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 0.05, 'was', 1]

Mo
###Effect of Mo doping for the Mn site in the ferromagnetic manganite La0.7Ca0.3MnO3|G. Narsinga Rao,J. W. Chen###
(933034, 933034)
 The overall experimental results can be explained by considering theinduced Mn2 ions with Mo6 in the Mo-doped systems, with the strong FM<missing VAR>coupling between Mn4/2- O - Mn3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 0.05, 'was', 1]

F
###Effect of Mo doping for the Mn site in the ferromagnetic manganite La0.7Ca0.3MnO3|G. Narsinga Rao,J. W. Chen###
(933047, 933047)
 The overall experimental results can be explained by considering theinduced Mn2 ions with Mo6 in the Mo-doped systems, with the strong FM<missing VAR>coupling between Mn4/2- O - Mn3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 0.05, 'was', 1]

Mn4
###Effect of Mo doping for the Mn site in the ferromagnetic manganite La0.7Ca0.3MnO3|G. Narsinga Rao,J. W. Chen###
(933055, 933056)
 The overall experimental results can be explained by considering theinduced Mn2 ions with Mo6 in the Mo-doped systems, with the strong FM<missing VAR>coupling between Mn4/2- O - Mn3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 0.05, 'was', 1]

O
###Effect of Mo doping for the Mn site in the ferromagnetic manganite La0.7Ca0.3MnO3|G. Narsinga Rao,J. W. Chen###
(933061, 933061)
 The overall experimental results can be explained by considering theinduced Mn2 ions with Mo6 in the Mo-doped systems, with the strong FM<missing VAR>coupling between Mn4/2- O - Mn3.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 0.05, 'was', 1]

Mn3
###Effect of Mo doping for the Mn site in the ferromagnetic manganite La0.7Ca0.3MnO3|G. Narsinga Rao,J. W. Chen###
(933065, 933066)
 The overall experimental results can be explained by considering theinduced Mn2 ions with Mo6 in the Mo-doped systems, with the strong FM<missing VAR>coupling between Mn4/2- O - Mn3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 0.05, 'was', 1]

Co60Fe20B20/MgO/Co60Fe20B20
###Measurement of the Spin-Transfer-Torque Vector in Magnetic Tunnel Junctions|J. C. Sankey,Y. -T. Cui,R. A. Buhrman,D. C. Ralph,J. Z. Sun,J. C. Slonczewski###
(933252, 933267)
 Here we present direct measurements of boththe magnitude and direction of the spin torque in Co60Fe20B20/MgO/Co60Fe20B20MTJs.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[203.0, 30, '%', 3]

At
###Measurement of the Spin-Transfer-Torque Vector in Magnetic Tunnel Junctions|J. C. Sankey,Y. -T. Cui,R. A. Buhrman,D. C. Ralph,J. Z. Sun,J. C. Slonczewski###
(933275, 933275)
 At low bias V, the differential torque vector d<missing VAR>tau/d<missing VAR>V lies in the planedefined by the electrode magnetizations, and its magnitude is in excellentagreement with a prediction for highly-spin-polarized tunneling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[195.0, 30, '%', 2]

V
###Measurement of the Spin-Transfer-Torque Vector in Magnetic Tunnel Junctions|J. C. Sankey,Y. -T. Cui,R. A. Buhrman,D. C. Ralph,J. Z. Sun,J. C. Slonczewski###
(933281, 933281)
 At low bias V, the differential torque vector d<missing VAR>tau/d<missing VAR>V lies in the planedefined by the electrode magnetizations, and its magnitude is in excellentagreement with a prediction for highly-spin-polarized tunneling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[189.0, 30, '%', 2]

V
###Measurement of the Spin-Transfer-Torque Vector in Magnetic Tunnel Junctions|J. C. Sankey,Y. -T. Cui,R. A. Buhrman,D. C. Ralph,J. Z. Sun,J. C. Slonczewski###
(933296, 933296)
 At low bias V, the differential torque vector d<missing VAR>tau/d<missing VAR>V lies in the planedefined by the electrode magnetizations, and its magnitude is in excellentagreement with a prediction for highly-spin-polarized tunneling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[174.0, 30, '%', 2]

V
###Measurement of the Spin-Transfer-Torque Vector in Magnetic Tunnel Junctions|J. C. Sankey,Y. -T. Cui,R. A. Buhrman,D. C. Ralph,J. Z. Sun,J. C. Slonczewski###
(933371, 933371)
 Withincreasing bias, the in-plane component d<missing VAR>tauparallel/d<missing VAR>V remains large, instriking contrast to the decreasing magnetoresistance ratio.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 30, '%', 1]

(V)
###Measurement of the Spin-Transfer-Torque Vector in Magnetic Tunnel Junctions|J. C. Sankey,Y. -T. Cui,R. A. Buhrman,D. C. Ralph,J. Z. Sun,J. C. Slonczewski###
(933435, 933437)
 The differentialtorque vector also rotates out of the plane under bias; we measure aperpendicular component tauperp(V) with bias dependence proportional to V2for low V, that becomes as large as 30% of the in-plane torque.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 30, '%', 0]

V2
###Measurement of the Spin-Transfer-Torque Vector in Magnetic Tunnel Junctions|J. C. Sankey,Y. -T. Cui,R. A. Buhrman,D. C. Ralph,J. Z. Sun,J. C. Slonczewski###
(933449, 933450)
 The differentialtorque vector also rotates out of the plane under bias; we measure aperpendicular component tauperp(V) with bias dependence proportional to V2for low V, that becomes as large as 30% of the in-plane torque.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 30, '%', 0]

V
###Measurement of the Spin-Transfer-Torque Vector in Magnetic Tunnel Junctions|J. C. Sankey,Y. -T. Cui,R. A. Buhrman,D. C. Ralph,J. Z. Sun,J. C. Slonczewski###
(933457, 933457)
 The differentialtorque vector also rotates out of the plane under bias; we measure aperpendicular component tauperp(V) with bias dependence proportional to V2for low V, that becomes as large as 30% of the in-plane torque.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 30, '%', 0]

EuB5.99C0.01
###Anomalous magnetoresistance of EuB$_{5.99}$C$_{0.01}$: Enhancement of magnetoresistance in systems with magnetic polarons|M. Batkova,I. Batko,K. Flachbart,K. Jurek,E. S. Konovalova,J. Kovac,M. Reiffers,V. Sechovsky,N. Shitsevalova,E. Santava,J. Sebek###
(933498, 933502)
Anomalous magnetoresistance of EuB5.99C0.01 Enhancement of magnetoresistance in systems with magnetic polarons.
Featurization terminated normally.
0,0,0,0,0.8557142857142858,0.0014285714285714286,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuB5.99C0.01
###Anomalous magnetoresistance of EuB$_{5.99}$C$_{0.01}$: Enhancement of magnetoresistance in systems with magnetic polarons|M. Batkova,I. Batko,K. Flachbart,K. Jurek,E. S. Konovalova,J. Kovac,M. Reiffers,V. Sechovsky,N. Shitsevalova,E. Santava,J. Sebek###
(933547, 933551)
 We present results of measurements of electrical, magnetic and thermalproperties of EuB5.99C0.01.
Featurization terminated normally.
0,0,0,0,0.8557142857142858,0.0014285714285714286,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Anomalous magnetoresistance of EuB$_{5.99}$C$_{0.01}$: Enhancement of magnetoresistance in systems with magnetic polarons|M. Batkova,I. Batko,K. Flachbart,K. Jurek,E. S. Konovalova,J. Kovac,M. Reiffers,V. Sechovsky,N. Shitsevalova,E. Santava,J. Sebek###
(933590, 933590)
 The observed anomalously large negativemagnetoresistance as above, so below the Curie temperature of ferromagneticordering T<missing VAR>C is attributed to fluctuations in carbon concentration.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Anomalous magnetoresistance of EuB$_{5.99}$C$_{0.01}$: Enhancement of magnetoresistance in systems with magnetic polarons|M. Batkova,I. Batko,K. Flachbart,K. Jurek,E. S. Konovalova,J. Kovac,M. Reiffers,V. Sechovsky,N. Shitsevalova,E. Santava,J. Sebek###
(933611, 933611)
 BelowT<missing VAR>C the carbon richer regions give rise to helimagnetic domains, which areresponsible for an additional scattering term in the resistivity, which can besuppressed by a magnetic field.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Anomalous magnetoresistance of EuB$_{5.99}$C$_{0.01}$: Enhancement of magnetoresistance in systems with magnetic polarons|M. Batkova,I. Batko,K. Flachbart,K. Jurek,E. S. Konovalova,J. Kovac,M. Reiffers,V. Sechovsky,N. Shitsevalova,E. Santava,J. Sebek###
(933677, 933677)
 Above T<missing VAR>C these regions prevent the processof percolation of magnetic polarons (M<missing VAR>Ps), acting as spacers between M<missing VAR>Ps.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Al
###Magnetic confinement of the superconducting condensate in superconductor/ferromagnet hybrid composites|W. Gillijns,A. Aladyshkin,A. V. Silhanek,V. V. Moshchalkov###
(933853, 933853)
 The influence of an inhomogeneous magnetic field on the magnetoresistance ofthin Al films, used in different superconductor/ferromagnet hybrids, has beeninvestigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###Magnetic confinement of the superconducting condensate in superconductor/ferromagnet hybrid composites|W. Gillijns,A. Aladyshkin,A. V. Silhanek,V. V. Moshchalkov###
(934044, 934044)
 By switching between different magnetic statesof the ferromagnet, this confinement can be tuned at will, hereby reversiblychanging the dependence of the critical temperature Tc on an external magneticfield H.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Magnetic confinement of the superconducting condensate in superconductor/ferromagnet hybrid composites|W. Gillijns,A. Aladyshkin,A. V. Silhanek,V. V. Moshchalkov###
(934057, 934057)
 By switching between different magnetic statesof the ferromagnet, this confinement can be tuned at will, hereby reversiblychanging the dependence of the critical temperature Tc on an external magneticfield H.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magnetic confinement of the superconducting condensate in superconductor/ferromagnet hybrid composites|W. Gillijns,A. Aladyshkin,A. V. Silhanek,V. V. Moshchalkov###
(934060, 934060)
 In particular, the continuous evolution from a conventional linearTc(H) dependence with a single maximum to a reentrant superconducting phaseboundary with multiple Tc peaks has been demonstrated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc(H)
###Magnetic confinement of the superconducting condensate in superconductor/ferromagnet hybrid composites|W. Gillijns,A. Aladyshkin,A. V. Silhanek,V. V. Moshchalkov###
(934080, 934083)
 In particular, the continuous evolution from a conventional linearTc(H) dependence with a single maximum to a reentrant superconducting phaseboundary with multiple Tc peaks has been demonstrated.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###Magnetic confinement of the superconducting condensate in superconductor/ferromagnet hybrid composites|W. Gillijns,A. Aladyshkin,A. V. Silhanek,V. V. Moshchalkov###
(934112, 934112)
 In particular, the continuous evolution from a conventional linearTc(H) dependence with a single maximum to a reentrant superconducting phaseboundary with multiple Tc peaks has been demonstrated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nd2-xCe
###Giant Anisotropy of Magnetoresistance and "Spin Valve" effect in Antiferromagnetic $Nd_{2-x}Ce_xCuO_{4}$|T. Wu,C. H. Wang,G. Wu,D. F. Fang,J. L. Luo,G T. Liu,X. H. Chen###
(934151, 934155)
Giant Anisotropy of Magnetoresistance and Spin Valve effect in Antiferromagnetic Nd2-xCex<missing VAR>CuO4.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[92.0, 5, 'K', 2]

CuO4
###Giant Anisotropy of Magnetoresistance and "Spin Valve" effect in Antiferromagnetic $Nd_{2-x}Ce_xCuO_{4}$|T. Wu,C. H. Wang,G. Wu,D. F. Fang,J. L. Luo,G T. Liu,X. H. Chen###
(934157, 934159)
Giant Anisotropy of Magnetoresistance and Spin Valve effect in Antiferromagnetic Nd2-xCex<missing VAR>CuO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 5, 'K', 2]

(B)
###Giant Anisotropy of Magnetoresistance and "Spin Valve" effect in Antiferromagnetic $Nd_{2-x}Ce_xCuO_{4}$|T. Wu,C. H. Wang,G. Wu,D. F. Fang,J. L. Luo,G T. Liu,X. H. Chen###
(934190, 934192)
 We have studied anisotropic magnetoresistance (MR) and magnetization withrotating magnetic field (B) within CuO2 plane in lightly doped AFNd2-xCex<missing VAR>CuO4.
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 5, 'K', 1]

CuO2
###Giant Anisotropy of Magnetoresistance and "Spin Valve" effect in Antiferromagnetic $Nd_{2-x}Ce_xCuO_{4}$|T. Wu,C. H. Wang,G. Wu,D. F. Fang,J. L. Luo,G T. Liu,X. H. Chen###
(934196, 934198)
 We have studied anisotropic magnetoresistance (MR) and magnetization withrotating magnetic field (B) within CuO2 plane in lightly doped AFNd2-xCex<missing VAR>CuO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 5, 'K', 1]

F
###Giant Anisotropy of Magnetoresistance and "Spin Valve" effect in Antiferromagnetic $Nd_{2-x}Ce_xCuO_{4}$|T. Wu,C. H. Wang,G. Wu,D. F. Fang,J. L. Luo,G T. Liu,X. H. Chen###
(934209, 934209)
 We have studied anisotropic magnetoresistance (MR) and magnetization withrotating magnetic field (B) within CuO2 plane in lightly doped AFNd2-xCex<missing VAR>CuO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 5, 'K', 1]

Nd2-xCe
###Giant Anisotropy of Magnetoresistance and "Spin Valve" effect in Antiferromagnetic $Nd_{2-x}Ce_xCuO_{4}$|T. Wu,C. H. Wang,G. Wu,D. F. Fang,J. L. Luo,G T. Liu,X. H. Chen###
(934212, 934216)
 We have studied anisotropic magnetoresistance (MR) and magnetization withrotating magnetic field (B) within CuO2 plane in lightly doped AFNd2-xCex<missing VAR>CuO4.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[31.0, 5, 'K', 1]

CuO4
###Giant Anisotropy of Magnetoresistance and "Spin Valve" effect in Antiferromagnetic $Nd_{2-x}Ce_xCuO_{4}$|T. Wu,C. H. Wang,G. Wu,D. F. Fang,J. L. Luo,G T. Liu,X. H. Chen###
(934218, 934220)
 We have studied anisotropic magnetoresistance (MR) and magnetization withrotating magnetic field (B) within CuO2 plane in lightly doped AFNd2-xCex<missing VAR>CuO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 5, 'K', 1]

B
###Giant Anisotropy of Magnetoresistance and "Spin Valve" effect in Antiferromagnetic $Nd_{2-x}Ce_xCuO_{4}$|T. Wu,C. H. Wang,G. Wu,D. F. Fang,J. L. Luo,G T. Liu,X. H. Chen###
(934281, 934281)
 The c<missing VAR>-axis resistivity can be tuned about one order ofmagnitude just by changing B direction within CuO2 plane and a scalingbehavior between out-of-plane and in-plane MR is found.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 5, 'K', 1]

CuO2
###Giant Anisotropy of Magnetoresistance and "Spin Valve" effect in Antiferromagnetic $Nd_{2-x}Ce_xCuO_{4}$|T. Wu,C. H. Wang,G. Wu,D. F. Fang,J. L. Luo,G T. Liu,X. H. Chen###
(934287, 934289)
 The c<missing VAR>-axis resistivity can be tuned about one order ofmagnitude just by changing B direction within CuO2 plane and a scalingbehavior between out-of-plane and in-plane MR is found.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 5, 'K', 1]

Nd3
###Giant Anisotropy of Magnetoresistance and "Spin Valve" effect in Antiferromagnetic $Nd_{2-x}Ce_xCuO_{4}$|T. Wu,C. H. Wang,G. Wu,D. F. Fang,J. L. Luo,G T. Liu,X. H. Chen###
(934403, 934404)
 It is found that thefield-induced spin-flop transition of Nd3 layer under high magnetic fieldis the key to understand the giant anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 5, 'K', 3]

F
###Transport properties of chemically synthesized polypyrrole thin films|C. C. Bof Bufon,T. Heinzel###
(934620, 934620)
 For smallelectric fields F, a transition from Efros-Shklovskii variable range hopping toArrhenius activated transport is observed at 30 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 30, 'K', 0]

F
###Transport properties of chemically synthesized polypyrrole thin films|C. C. Bof Bufon,T. Heinzel###
(934693, 934693)
 The characteristic hopping distance is found to beproportional to F(-1/2).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 30, 'K', 2]

(B)
###Transport properties of chemically synthesized polypyrrole thin films|C. C. Bof Bufon,T. Heinzel###
(934707, 934709)
 The magnetoresistance R<missing VAR>(B) is independent of F belowa critical magnetic field, above which F counteracts the magnetic field inducedlocalization.
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 30, 'K', 3]

F
###Transport properties of chemically synthesized polypyrrole thin films|C. C. Bof Bufon,T. Heinzel###
(934717, 934717)
 The magnetoresistance R<missing VAR>(B) is independent of F belowa critical magnetic field, above which F counteracts the magnetic field inducedlocalization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 30, 'K', 3]

F
###Transport properties of chemically synthesized polypyrrole thin films|C. C. Bof Bufon,T. Heinzel###
(934735, 934735)
 The magnetoresistance R<missing VAR>(B) is independent of F belowa critical magnetic field, above which F counteracts the magnetic field inducedlocalization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 30, 'K', 3]

CoFe2O4
###Room temperature spin filtering in epitaxial cobalt-ferrite tunnel barriers|A. V. Ramos,M. -J. Guittet,J. -B. Moussy,R. Mattana,C. Deranlot,F. Petroff,C. Gatel###
(934817, 934821)
 We report direct experimental evidence of room temperature spin filtering inmagnetic tunnel junctions (MTJs) containing CoFe2O4 tunnel barriers viatunneling magnetoresistance (TMR) measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, -18, '%', 2],[122.0, 2, 'K', 2],[126.0, -3, '%', 2],[131.0, 290, 'K', 2]

O4
###Room temperature spin filtering in epitaxial cobalt-ferrite tunnel barriers|A. V. Ramos,M. -J. Guittet,J. -B. Moussy,R. Mattana,C. Deranlot,F. Petroff,C. Gatel###
(934852, 934853)
Pt(111)/CoFe2O4(111)/gamma-Al2O3(111)/Co(0001) fully epitaxial MTJs were grownin order to obtain a high quality system, capable of functioning at roomtemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, -18, '%', 1],[90.0, 2, 'K', 1],[94.0, -3, '%', 1],[99.0, 290, 'K', 1]

O3
###Room temperature spin filtering in epitaxial cobalt-ferrite tunnel barriers|A. V. Ramos,M. -J. Guittet,J. -B. Moussy,R. Mattana,C. Deranlot,F. Petroff,C. Gatel###
(934862, 934863)
Pt(111)/CoFe2O4(111)/gamma-Al2O3(111)/Co(0001) fully epitaxial MTJs were grownin order to obtain a high quality system, capable of functioning at roomtemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, -18, '%', 1],[80.0, 2, 'K', 1],[84.0, -3, '%', 1],[89.0, 290, 'K', 1]

In
###Room temperature spin filtering in epitaxial cobalt-ferrite tunnel barriers|A. V. Ramos,M. -J. Guittet,J. -B. Moussy,R. Mattana,C. Deranlot,F. Petroff,C. Gatel###
(934955, 934955)
 In addition, the TMR ratio follows aunique bias voltage dependence that has been theoretically predicted to be thesignature of spin filtering in MTJs containing magnetic barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, -18, '%', 1],[12.0, 2, 'K', 1],[8.0, -3, '%', 1],[3.0, 290, 'K', 1]

CoFe2O4
###Room temperature spin filtering in epitaxial cobalt-ferrite tunnel barriers|A. V. Ramos,M. -J. Guittet,J. -B. Moussy,R. Mattana,C. Deranlot,F. Petroff,C. Gatel###
(935019, 935023)
 CoFe2O4tunnel barriers therefore provide a model system to investigate spin filteringin a wide range of temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, -18, '%', 2],[76.0, 2, 'K', 2],[72.0, -3, '%', 2],[67.0, 290, 'K', 2]

EuO
###Spin transport in proximity induced ferromagnetic graphene|H. Haugen,Daniel Huertas-Hernando,Arne Brataas###
(935195, 935196)
 EuO-gates, deposited on top ofgraphene.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 5, 'meV', 1]

V
###Photon-assisted spin transport in a two-dimensional electron gas|M. V. Fistul,K. B. Efetov###
(935453, 935453)
 We study spin-dependent transport in a two-dimensional electron gas subjectto an external step-like potential V(x) and irradiated by an electromagneticfield (E<missing VAR>F).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Photon-assisted spin transport in a two-dimensional electron gas|M. V. Fistul,K. B. Efetov###
(935473, 935473)
 We study spin-dependent transport in a two-dimensional electron gas subjectto an external step-like potential V(x) and irradiated by an electromagneticfield (E<missing VAR>F).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Photon-assisted spin transport in a two-dimensional electron gas|M. V. Fistul,K. B. Efetov###
(935477, 935477)
 In the absence of E<missing VAR>F the electronic spectrum splits into spinsub-bands originating from the Rashba spin-orbit coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Photon-assisted spin transport in a two-dimensional electron gas|M. V. Fistul,K. B. Efetov###
(935486, 935486)
 In the absence of E<missing VAR>F the electronic spectrum splits into spinsub-bands originating from the Rashba spin-orbit coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Photon-assisted spin transport in a two-dimensional electron gas|M. V. Fistul,K. B. Efetov###
(935546, 935546)
 We show that theresonant interaction of propagating electrons with the component E<missing VAR>F parallel tothe barrier induces a textit% non-equilibrium dynamic gap (2DeltaR)between the spin sub-bands.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Photon-assisted spin transport in a two-dimensional electron gas|M. V. Fistul,K. B. Efetov###
(935705, 935705)
, by variation of the intensity S and frequencyomega  of the external radiation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pr2-x
###Normal State Nernst Effect in Electron-doped Pr2-xCexCuO4: Superconducting Fluctuations and Two-band Transport|Pengcheng Li,R. L. Greene###
(935746, 935749)
Normal State Nernst Effect in Electron-doped Pr2-xCexCuO4 Superconducting Fluctuations and Two-band Transport.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

CuO4
###Normal State Nernst Effect in Electron-doped Pr2-xCexCuO4: Superconducting Fluctuations and Two-band Transport|Pengcheng Li,R. L. Greene###
(935751, 935753)
Normal State Nernst Effect in Electron-doped Pr2-xCexCuO4 Superconducting Fluctuations and Two-band Transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pr2-xCe
###Normal State Nernst Effect in Electron-doped Pr2-xCexCuO4: Superconducting Fluctuations and Two-band Transport|Pengcheng Li,R. L. Greene###
(935799, 935803)
 We report a systematic study of normal state Nernst effect in theelectron-doped cuprates Pr2-xCex<missing VAR>CuO4-delta over a wide range ofdoping (0.05leq x<missing VAR> leq0.21) and temperature.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

CuO4
###Normal State Nernst Effect in Electron-doped Pr2-xCexCuO4: Superconducting Fluctuations and Two-band Transport|Pengcheng Li,R. L. Greene###
(935805, 935807)
 We report a systematic study of normal state Nernst effect in theelectron-doped cuprates Pr2-xCex<missing VAR>CuO4-delta over a wide range ofdoping (0.05leq x<missing VAR> leq0.21) and temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Normal State Nernst Effect in Electron-doped Pr2-xCexCuO4: Superconducting Fluctuations and Two-band Transport|Pengcheng Li,R. L. Greene###
(935839, 935839)
 At low temperatures, weobserved a notable vortex Nernst signal above Tc in the underdoped films,but no such normal state vortex Nernst signal is found in the overdoped region.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Normal State Nernst Effect in Electron-doped Pr2-xCexCuO4: Superconducting Fluctuations and Two-band Transport|Pengcheng Li,R. L. Greene###
(935946, 935946)
 At hightemperatures, a large normal state Nernst signal is found at dopings fromslightly underdoped to highly overdoped.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tl2Ba2CuO6
###Angle dependent magnetoresistance measurements in Tl$_2$Ba$_2$CuO$_{6+δ}$ and the need for anisotropic scattering|J. G. Analytis,M. Abdel-Jawad,L. Balicas,M. M. J. French,N. E. Hussey###
(936107, 936113)
Angle dependent magnetoresistance measurements in Tl2Ba2CuO6 and the need for anisotropic scattering.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5454545454545454,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.09090909090909091,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tl2Ba2CuO6
###Angle dependent magnetoresistance measurements in Tl$_2$Ba$_2$CuO$_{6+δ}$ and the need for anisotropic scattering|J. G. Analytis,M. Abdel-Jawad,L. Balicas,M. M. J. French,N. E. Hussey###
(936143, 936149)
 The angle-dependent interlayer magnetoresistance of overdopedTl2Ba2CuO6delta has been measured in high magnetic fields up to 45Tesla.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5454545454545454,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.09090909090909091,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Magnons in Ferromagnetic Metallic Manganites|Jiandi Zhang,F. Ye,Hao Sha,Pengcheng Dai,J. A. Fernandez-Baca,E. W. Plummer###
(936413, 936413)
 Ferromagnetic (FM) manganites, a group of likely half-metallic oxides, are ofspecial interest not only because they are a testing ground of the classicaldoubleexchange interaction mechanism for the colossal magnetoresistance, butalso because they exhibit an extraordinary arena of emergent phenomena.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magnons in Ferromagnetic Metallic Manganites|Jiandi Zhang,F. Ye,Hao Sha,Pengcheng Dai,J. A. Fernandez-Baca,E. W. Plummer###
(936548, 936548)
 In this review, we focuson the use of inelastic neutron scattering to study the spin dynamics, mainlythe magnon excitations in this class of FM<missing VAR> metallic materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Magnons in Ferromagnetic Metallic Manganites|Jiandi Zhang,F. Ye,Hao Sha,Pengcheng Dai,J. A. Fernandez-Baca,E. W. Plummer###
(936602, 936602)
 In this review, we focuson the use of inelastic neutron scattering to study the spin dynamics, mainlythe magnon excitations in this class of FM<missing VAR> metallic materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magnons in Ferromagnetic Metallic Manganites|Jiandi Zhang,F. Ye,Hao Sha,Pengcheng Dai,J. A. Fernandez-Baca,E. W. Plummer###
(936610, 936610)
 In particular,we discussed the unusual magnon softening and damping near the Brillouin zoneboundary in relatively narrow band compounds with strong Jahn-Teller latticedistortion and charge/orbital correlations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Modulation of bilayer quantum Hall states by tilted-field-induced subband-Landau-level coupling|N. Kumada,K. Iwata,K. Tagashira,Y. Shimoda,K. Muraki,Y. Hirayama,A. Sawada###
(937140, 937140)
 We study effects of tilted magnetic fields on energy levels in adouble-quantum-well (DQW) system, focusing on the coupling of subbands andLandau levels (L<missing VAR>Ls).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Modulation of bilayer quantum Hall states by tilted-field-induced subband-Landau-level coupling|N. Kumada,K. Iwata,K. Tagashira,Y. Shimoda,K. Muraki,Y. Hirayama,A. Sawada###
(937340, 937340)
 We also find that when the DQW potential is asymmetric, LL coupling occurseven within a subband.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Modeling a Schottky-barrier carbon nanotube field-effect transistor with ferromagnetic contacts|S. Krompiewski###
(937423, 937423)
 In this study, a model of a Schottky-barrier carbon nanotube field- effecttransistor (CNT<missing VAR>-FET), with ferromagnetic contacts, has been developed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[279.0, 50, '%', 5]

CN
###Modeling a Schottky-barrier carbon nanotube field-effect transistor with ferromagnetic contacts|S. Krompiewski###
(937455, 937456)
 In this study, a model of a Schottky-barrier carbon nanotube field- effecttransistor (CNT<missing VAR>-FET), with ferromagnetic contacts, has been developed.
Featurization terminated normally.
0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[246.0, 50, '%', 5]

F
###Modeling a Schottky-barrier carbon nanotube field-effect transistor with ferromagnetic contacts|S. Krompiewski###
(937459, 937459)
 In this study, a model of a Schottky-barrier carbon nanotube field- effecttransistor (CNT<missing VAR>-FET), with ferromagnetic contacts, has been developed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[243.0, 50, '%', 5]

CN
###Modeling a Schottky-barrier carbon nanotube field-effect transistor with ferromagnetic contacts|S. Krompiewski###
(937581, 937582)
 The calculations show that, atroom temperature, the shot noise of the CNT<missing VAR> FET is Poissonian in thesub-threshold region, whereas in elevated gate and drain/source voltage regionsthe Fano factor gets strongly reduced.
Featurization terminated normally.
0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 50, '%', 2]

F
###Modeling a Schottky-barrier carbon nanotube field-effect transistor with ferromagnetic contacts|S. Krompiewski###
(937585, 937585)
 The calculations show that, atroom temperature, the shot noise of the CNT<missing VAR> FET is Poissonian in thesub-threshold region, whereas in elevated gate and drain/source voltage regionsthe Fano factor gets strongly reduced.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 50, '%', 2]

In
###Modeling a Schottky-barrier carbon nanotube field-effect transistor with ferromagnetic contacts|S. Krompiewski###
(937671, 937671)
In particular, one observes quite a large tunnel magnetoresistance, whoseabsolute value may exceed 50%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 50, '%', 0]

B
###Pseudospin Soliton in the $ν=1$ Bilayer Quantum Hall State|A. Fukuda,D. Terasawa,M. Morino,K. Iwata,S. Kozumi,N. Kumada,Y. Hirayama,Z. F. Ezawa,A. Sawada###
(937892, 937892)
 TheR<missing VAR>xx at the peak is highly anisotropic for the angle between the in-plainmagnetic field Bparallel  and the current, and indicates a formation of thesoliton lattice aligned parallel to Bparallel .
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 1, ',', 2]

B
###Pseudospin Soliton in the $ν=1$ Bilayer Quantum Hall State|A. Fukuda,D. Terasawa,M. Morino,K. Iwata,S. Kozumi,N. Kumada,Y. Hirayama,Z. F. Ezawa,A. Sawada###
(937926, 937926)
 TheR<missing VAR>xx at the peak is highly anisotropic for the angle between the in-plainmagnetic field Bparallel  and the current, and indicates a formation of thesoliton lattice aligned parallel to Bparallel .
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 1, ',', 2]

B
###Pseudospin Soliton in the $ν=1$ Bilayer Quantum Hall State|A. Fukuda,D. Terasawa,M. Morino,K. Iwata,S. Kozumi,N. Kumada,Y. Hirayama,Z. F. Ezawa,A. Sawada###
(938002, 938002)
 We construct a phase diagram of thebilayer nu 1 system as a function of Bparallel and the total electrondensity.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[221.0, 1, ',', 4]

Ag
###Preparation and magnetoresistance of Ag 2+x Se thin films deposited via Pulsed Laser Deposition|B. Mogwitz,C. Korte,M. von Kreutzbruck,L. Kienle,J. Janek###
(938056, 938056)
Preparation and magnetoresistance of Ag 2x<missing VAR> Se thin films deposited via Pulsed Laser Deposition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 4, 'nm', 1]

Se
###Preparation and magnetoresistance of Ag 2+x Se thin films deposited via Pulsed Laser Deposition|B. Mogwitz,C. Korte,M. von Kreutzbruck,L. Kienle,J. Janek###
(938061, 938061)
Preparation and magnetoresistance of Ag 2x<missing VAR> Se thin films deposited via Pulsed Laser Deposition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 4, 'nm', 1]

Ag
###Preparation and magnetoresistance of Ag 2+x Se thin films deposited via Pulsed Laser Deposition|B. Mogwitz,C. Korte,M. von Kreutzbruck,L. Kienle,J. Janek###
(938084, 938084)
 The preparation of Ag 2x<missing VAR> Se thin films with thicknesses between 4 nm and3000 nm by pulsed laser deposition on single crystalline NaCl and MgOsubstrates is reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 4, 'nm', 0]

Se
###Preparation and magnetoresistance of Ag 2+x Se thin films deposited via Pulsed Laser Deposition|B. Mogwitz,C. Korte,M. von Kreutzbruck,L. Kienle,J. Janek###
(938089, 938089)
 The preparation of Ag 2x<missing VAR> Se thin films with thicknesses between 4 nm and3000 nm by pulsed laser deposition on single crystalline NaCl and MgOsubstrates is reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 4, 'nm', 0]

NaCl
###Preparation and magnetoresistance of Ag 2+x Se thin films deposited via Pulsed Laser Deposition|B. Mogwitz,C. Korte,M. von Kreutzbruck,L. Kienle,J. Janek###
(938123, 938124)
 The preparation of Ag 2x<missing VAR> Se thin films with thicknesses between 4 nm and3000 nm by pulsed laser deposition on single crystalline NaCl and MgOsubstrates is reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 4, 'nm', 0]

MgO
###Preparation and magnetoresistance of Ag 2+x Se thin films deposited via Pulsed Laser Deposition|B. Mogwitz,C. Korte,M. von Kreutzbruck,L. Kienle,J. Janek###
(938128, 938129)
 The preparation of Ag 2x<missing VAR> Se thin films with thicknesses between 4 nm and3000 nm by pulsed laser deposition on single crystalline NaCl and MgOsubstrates is reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 4, 'nm', 0]

F
###Multicritical end-point of the first-order ferromagnetic transition in colossal magnetoresistive manganites|L. Demkó,I. Kézsmárki,G. Mihály,N. Takeshita,Y. Tomioka,Y. Tokura###
(938441, 938441)
 We have studied the bandwidth-temperature-magnetic field phase diagram ofRE(0.55)Sr(0.45)MnO(3) colossal magnetoresistance manganites with ferromagneticmetallic (FM) ground state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Multicritical end-point of the first-order ferromagnetic transition in colossal magnetoresistive manganites|L. Demkó,I. Kézsmárki,G. Mihály,N. Takeshita,Y. Tomioka,Y. Tokura###
(938525, 938525)
 The bandwidth (or equivalently the double exchangeinteraction) was controlled both via chemical substitution and hydrostaticpressure with a focus on the vicinity of the critical pressure p<missing VAR> where thecharacter of the zero-field FM<missing VAR> transition changes from first to second order.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Multicritical end-point of the first-order ferromagnetic transition in colossal magnetoresistive manganites|L. Demkó,I. Kézsmárki,G. Mihály,N. Takeshita,Y. Tomioka,Y. Tokura###
(938554, 938554)
Below p<missing VAR> the first-order FM<missing VAR> transition extends up to a critical magnetic field,Hcr.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Multicritical end-point of the first-order ferromagnetic transition in colossal magnetoresistive manganites|L. Demkó,I. Kézsmárki,G. Mihály,N. Takeshita,Y. Tomioka,Y. Tokura###
(938575, 938575)
Below p<missing VAR> the first-order FM<missing VAR> transition extends up to a critical magnetic field,Hcr.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Multicritical end-point of the first-order ferromagnetic transition in colossal magnetoresistive manganites|L. Demkó,I. Kézsmárki,G. Mihály,N. Takeshita,Y. Tomioka,Y. Tokura###
(938620, 938620)
 It is suppressed by pressure and approaches zero on the larger bandwidthside where the surface of the first-order FM<missing VAR> phase boundary is terminated by amulticritical end-point (p<missing VAR>32 kbar, T<missing VAR>188 K, H0).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Multicritical end-point of the first-order ferromagnetic transition in colossal magnetoresistive manganites|L. Demkó,I. Kézsmárki,G. Mihály,N. Takeshita,Y. Tomioka,Y. Tokura###
(938652, 938652)
 It is suppressed by pressure and approaches zero on the larger bandwidthside where the surface of the first-order FM<missing VAR> phase boundary is terminated by amulticritical end-point (p<missing VAR>32 kbar, T<missing VAR>188 K, H0).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H0
###Multicritical end-point of the first-order ferromagnetic transition in colossal magnetoresistive manganites|L. Demkó,I. Kézsmárki,G. Mihály,N. Takeshita,Y. Tomioka,Y. Tokura###
(938655, 938656)
 It is suppressed by pressure and approaches zero on the larger bandwidthside where the surface of the first-order FM<missing VAR> phase boundary is terminated by amulticritical end-point (p<missing VAR>32 kbar, T<missing VAR>188 K, H0).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Multicritical end-point of the first-order ferromagnetic transition in colossal magnetoresistive manganites|L. Demkó,I. Kézsmárki,G. Mihály,N. Takeshita,Y. Tomioka,Y. Tokura###
(938687, 938687)
 The change in thecharacter of the transition and the decrease of the CMR effect is attributed tothe reduced CO/OO fluctuations.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CO/OO
###Multicritical end-point of the first-order ferromagnetic transition in colossal magnetoresistive manganites|L. Demkó,I. Kézsmárki,G. Mihály,N. Takeshita,Y. Tomioka,Y. Tokura###
(938704, 938708)
 The change in thecharacter of the transition and the decrease of the CMR effect is attributed tothe reduced CO/OO fluctuations.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

TmB4
###Magnetic structure and phase diagram of TmB4|S. Gabani,S. Matas,P. Priputen,K. Flachbart,K. Siemensmeyer,E. Wulf,A. Evdokimova,N. Shitsevalova###
(938733, 938735)
Magnetic structure and phase diagram of TmB4.
Featurization terminated normally.
0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 11.7, 'K', 2],[109.0, 9, ',', 3],[213.0, 7, 'or', 4],[214.0, 9, 'lattice', 4]

TmB4
###Magnetic structure and phase diagram of TmB4|S. Gabani,S. Matas,P. Priputen,K. Flachbart,K. Siemensmeyer,E. Wulf,A. Evdokimova,N. Shitsevalova###
(938748, 938750)
 Magnetic structure of single crystalline TmB4 has been studied bymagnetization, magnetoresistivity and specific heat measurements.
Featurization terminated normally.
0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 11.7, 'K', 1],[94.0, 9, ',', 2],[198.0, 7, 'or', 3],[199.0, 9, 'lattice', 3]

F
###Magnetic structure and phase diagram of TmB4|S. Gabani,S. Matas,P. Priputen,K. Flachbart,K. Siemensmeyer,E. Wulf,A. Evdokimova,N. Shitsevalova###
(938792, 938792)
 A complexphase diagram with different antiferromagnetic (AF) phases was observed belowT<missing VAR>N1  11.7 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 11.7, 'K', 0],[52.0, 9, ',', 1],[156.0, 7, 'or', 2],[157.0, 9, 'lattice', 2]

N1
###Magnetic structure and phase diagram of TmB4|S. Gabani,S. Matas,P. Priputen,K. Flachbart,K. Siemensmeyer,E. Wulf,A. Evdokimova,N. Shitsevalova###
(938805, 938806)
 A complexphase diagram with different antiferromagnetic (AF) phases was observed belowT<missing VAR>N1  11.7 K.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 11.7, 'K', 0],[38.0, 9, ',', 1],[142.0, 7, 'or', 2],[143.0, 9, 'lattice', 2]

S
###Magnetic structure and phase diagram of TmB4|S. Gabani,S. Matas,P. Priputen,K. Flachbart,K. Siemensmeyer,E. Wulf,A. Evdokimova,N. Shitsevalova###
(938831, 938831)
 Besides the plateau at half-saturated magnetization (1/2 M<missing VAR>S),also plateaus at 1/9, 1/8 and 1/7 of M<missing VAR>S were observed as function of appliedmagnetic field B//c<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 11.7, 'K', 1],[13.0, 9, ',', 0],[117.0, 7, 'or', 1],[118.0, 9, 'lattice', 1]

S
###Magnetic structure and phase diagram of TmB4|S. Gabani,S. Matas,P. Priputen,K. Flachbart,K. Siemensmeyer,E. Wulf,A. Evdokimova,N. Shitsevalova###
(938860, 938860)
 Besides the plateau at half-saturated magnetization (1/2 M<missing VAR>S),also plateaus at 1/9, 1/8 and 1/7 of M<missing VAR>S were observed as function of appliedmagnetic field B//c<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 11.7, 'K', 1],[16.0, 9, ',', 0],[88.0, 7, 'or', 1],[89.0, 9, 'lattice', 1]

B
###Magnetic structure and phase diagram of TmB4|S. Gabani,S. Matas,P. Priputen,K. Flachbart,K. Siemensmeyer,E. Wulf,A. Evdokimova,N. Shitsevalova###
(938879, 938879)
 Besides the plateau at half-saturated magnetization (1/2 M<missing VAR>S),also plateaus at 1/9, 1/8 and 1/7 of M<missing VAR>S were observed as function of appliedmagnetic field B//c<missing VAR>.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 11.7, 'K', 1],[35.0, 9, ',', 0],[69.0, 7, 'or', 1],[70.0, 9, 'lattice', 1]

TmB4
###Magnetic structure and phase diagram of TmB4|S. Gabani,S. Matas,P. Priputen,K. Flachbart,K. Siemensmeyer,E. Wulf,A. Evdokimova,N. Shitsevalova###
(938897, 938899)
 From additional neutron scattering experiments on TmB4, wesuppose that those plateaus arise from a stripe structure which appears to becoherent domain boundaries between AF ordered blocks of 7 or 9 latticeconstants.
Featurization terminated normally.
0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 11.7, 'K', 2],[53.0, 9, ',', 1],[49.0, 7, 'or', 0],[50.0, 9, 'lattice', 0]

F
###Magnetic structure and phase diagram of TmB4|S. Gabani,S. Matas,P. Priputen,K. Flachbart,K. Siemensmeyer,E. Wulf,A. Evdokimova,N. Shitsevalova###
(938941, 938941)
 From additional neutron scattering experiments on TmB4, wesuppose that those plateaus arise from a stripe structure which appears to becoherent domain boundaries between AF ordered blocks of 7 or 9 latticeconstants.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 11.7, 'K', 2],[97.0, 9, ',', 1],[7.0, 7, 'or', 0],[8.0, 9, 'lattice', 0]

Tm3
###Magnetic structure and phase diagram of TmB4|S. Gabani,S. Matas,P. Priputen,K. Flachbart,K. Siemensmeyer,E. Wulf,A. Evdokimova,N. Shitsevalova###
(938973, 938974)
 The received results suggest that the frustration among the Tm3magnetic ions, which maps to a geometrically frustrated Shastry-Sutherlandlattice lead to strong competition between AF and ferromagnetic (FM) order.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 11.7, 'K', 3],[129.0, 9, ',', 2],[25.0, 7, 'or', 1],[24.0, 9, 'lattice', 1]

F
###Magnetic structure and phase diagram of TmB4|S. Gabani,S. Matas,P. Priputen,K. Flachbart,K. Siemensmeyer,E. Wulf,A. Evdokimova,N. Shitsevalova###
(939012, 939012)
 The received results suggest that the frustration among the Tm3magnetic ions, which maps to a geometrically frustrated Shastry-Sutherlandlattice lead to strong competition between AF and ferromagnetic (FM) order.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[204.0, 11.7, 'K', 3],[168.0, 9, ',', 2],[64.0, 7, 'or', 1],[63.0, 9, 'lattice', 1]

F
###Magnetic structure and phase diagram of TmB4|S. Gabani,S. Matas,P. Priputen,K. Flachbart,K. Siemensmeyer,E. Wulf,A. Evdokimova,N. Shitsevalova###
(939019, 939019)
 The received results suggest that the frustration among the Tm3magnetic ions, which maps to a geometrically frustrated Shastry-Sutherlandlattice lead to strong competition between AF and ferromagnetic (FM) order.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[211.0, 11.7, 'K', 3],[175.0, 9, ',', 2],[71.0, 7, 'or', 1],[70.0, 9, 'lattice', 1]

Tm
###Magnetic structure and phase diagram of TmB4|S. Gabani,S. Matas,P. Priputen,K. Flachbart,K. Siemensmeyer,E. Wulf,A. Evdokimova,N. Shitsevalova###
(939076, 939076)
Thus, stripe structures in intermediate field appear to be the best way tominimize the magnetostatic energy against other magnetic interactions betweenthe Tm ions combined with very strong Ising anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[268.0, 11.7, 'K', 4],[232.0, 9, ',', 3],[128.0, 7, 'or', 2],[127.0, 9, 'lattice', 2]

MgO
###Crossover from Kondo assisted suppression to co-tunneling enhancement of tunneling magnetoresistance via ferromagnetic nanodots in MgO tunnel barriers|Hyunsoo Yang,See-Hun Yang,Stuart Parkin###
(939447, 939448)
Crossover from Kondo assisted suppression to co-tunneling enhancement of tunneling magnetoresistance via ferromagnetic nanodots in MgO tunnel barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 1, ',', 1],[64.0, 2.0, 'However', 1]

MgO
###Crossover from Kondo assisted suppression to co-tunneling enhancement of tunneling magnetoresistance via ferromagnetic nanodots in MgO tunnel barriers|Hyunsoo Yang,See-Hun Yang,Stuart Parkin###
(939478, 939479)
 Recently, it has been shown that magnetic tunnel junctions with thin MgOtunnel barriers exhibit extraordinarily high tunneling magnetoresistance (TMR)values at room temperature1, 2. However, the physics of spin dependenttunneling through MgO barriers is only beginning to be unravelled.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 1, ',', 0],[33.0, 2.0, 'However', 0]

MgO
###Crossover from Kondo assisted suppression to co-tunneling enhancement of tunneling magnetoresistance via ferromagnetic nanodots in MgO tunnel barriers|Hyunsoo Yang,See-Hun Yang,Stuart Parkin###
(939530, 939531)
 Recently, it has been shown that magnetic tunnel junctions with thin MgOtunnel barriers exhibit extraordinarily high tunneling magnetoresistance (TMR)values at room temperature1, 2. However, the physics of spin dependenttunneling through MgO barriers is only beginning to be unravelled.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 1, ',', 0],[18.0, 2.0, 'However', 0]

MgO
###Crossover from Kondo assisted suppression to co-tunneling enhancement of tunneling magnetoresistance via ferromagnetic nanodots in MgO tunnel barriers|Hyunsoo Yang,See-Hun Yang,Stuart Parkin###
(939590, 939591)
 Using planarmagnetic tunnel junctions in which ultra-thin layers of magnetic metals aredeposited in the middle of a MgO tunnel barrier here we demonstrate that theTMR is strongly modified when these layers are discontinuous and composed ofsmall pancake shaped nanodots.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 1, ',', 1],[78.0, 2.0, 'However', 1]

At
###Crossover from Kondo assisted suppression to co-tunneling enhancement of tunneling magnetoresistance via ferromagnetic nanodots in MgO tunnel barriers|Hyunsoo Yang,See-Hun Yang,Stuart Parkin###
(939644, 939644)
 At low temperatures, in the Coulomb blockaderegime, for layers less than 1 nm thick, the conductance of the junction isincreased at low bias consistent with Kondo assisted tunneling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 1, ',', 2],[132.0, 2.0, 'However', 2]

In
###Crossover from Kondo assisted suppression to co-tunneling enhancement of tunneling magnetoresistance via ferromagnetic nanodots in MgO tunnel barriers|Hyunsoo Yang,See-Hun Yang,Stuart Parkin###
(939710, 939710)
 In the sameregime we observe a suppression of the TMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[200.0, 1, ',', 3],[198.0, 2.0, 'However', 3]

Ga
###The Origin and Control of the Sources of AMR in (Ga,Mn)As Devices|A. W. Rushforth,K. Výborný,C. S. King,K. W. Edmonds,R. P. Campion,C. T. Foxon,J. Wunderlich,A. C. Irvine,V. Novák,K. Olejník,A. A. Kovalev,Jairo Sinova,T. Jungwirth,B. L. Gallagher###
(939813, 939813)
The Origin and Control of the Sources of AMR in (Ga,Mn)As Devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[211.0, 99, ',', 7]

Mn
###The Origin and Control of the Sources of AMR in (Ga,Mn)As Devices|A. W. Rushforth,K. Výborný,C. S. King,K. W. Edmonds,R. P. Campion,C. T. Foxon,J. Wunderlich,A. C. Irvine,V. Novák,K. Olejník,A. A. Kovalev,Jairo Sinova,T. Jungwirth,B. L. Gallagher###
(939815, 939815)
The Origin and Control of the Sources of AMR in (Ga,Mn)As Devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[209.0, 99, ',', 7]

As
###The Origin and Control of the Sources of AMR in (Ga,Mn)As Devices|A. W. Rushforth,K. Výborný,C. S. King,K. W. Edmonds,R. P. Campion,C. T. Foxon,J. Wunderlich,A. C. Irvine,V. Novák,K. Olejník,A. A. Kovalev,Jairo Sinova,T. Jungwirth,B. L. Gallagher###
(939817, 939817)
The Origin and Control of the Sources of AMR in (Ga,Mn)As Devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[207.0, 99, ',', 7]

Ga
###The Origin and Control of the Sources of AMR in (Ga,Mn)As Devices|A. W. Rushforth,K. Výborný,C. S. King,K. W. Edmonds,R. P. Campion,C. T. Foxon,J. Wunderlich,A. C. Irvine,V. Novák,K. Olejník,A. A. Kovalev,Jairo Sinova,T. Jungwirth,B. L. Gallagher###
(939864, 939864)
 We present details of our experimental and theoretical study of thecomponents of the anisotropic magnetoresistance (AMR) in (Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 99, ',', 6]

Mn
###The Origin and Control of the Sources of AMR in (Ga,Mn)As Devices|A. W. Rushforth,K. Výborný,C. S. King,K. W. Edmonds,R. P. Campion,C. T. Foxon,J. Wunderlich,A. C. Irvine,V. Novák,K. Olejník,A. A. Kovalev,Jairo Sinova,T. Jungwirth,B. L. Gallagher###
(939866, 939866)
 We present details of our experimental and theoretical study of thecomponents of the anisotropic magnetoresistance (AMR) in (Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 99, ',', 6]

As
###The Origin and Control of the Sources of AMR in (Ga,Mn)As Devices|A. W. Rushforth,K. Výborný,C. S. King,K. W. Edmonds,R. P. Campion,C. T. Foxon,J. Wunderlich,A. C. Irvine,V. Novák,K. Olejník,A. A. Kovalev,Jairo Sinova,T. Jungwirth,B. L. Gallagher###
(939868, 939868)
 We present details of our experimental and theoretical study of thecomponents of the anisotropic magnetoresistance (AMR) in (Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 99, ',', 6]

Ga
###The Origin and Control of the Sources of AMR in (Ga,Mn)As Devices|A. W. Rushforth,K. Výborný,C. S. King,K. W. Edmonds,R. P. Campion,C. T. Foxon,J. Wunderlich,A. C. Irvine,V. Novák,K. Olejník,A. A. Kovalev,Jairo Sinova,T. Jungwirth,B. L. Gallagher###
(939953, 939953)
 These methods are used toexplore the unusual phenomenology of the AMR in ultra thin (5nm) (Ga,Mn)Aslayers and to demonstrate how the components of the AMR can be engineeredthrough lithography induced local lattice relaxations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 99, ',', 4]

Mn
###The Origin and Control of the Sources of AMR in (Ga,Mn)As Devices|A. W. Rushforth,K. Výborný,C. S. King,K. W. Edmonds,R. P. Campion,C. T. Foxon,J. Wunderlich,A. C. Irvine,V. Novák,K. Olejník,A. A. Kovalev,Jairo Sinova,T. Jungwirth,B. L. Gallagher###
(939955, 939955)
 These methods are used toexplore the unusual phenomenology of the AMR in ultra thin (5nm) (Ga,Mn)Aslayers and to demonstrate how the components of the AMR can be engineeredthrough lithography induced local lattice relaxations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 99, ',', 4]

As
###The Origin and Control of the Sources of AMR in (Ga,Mn)As Devices|A. W. Rushforth,K. Výborný,C. S. King,K. W. Edmonds,R. P. Campion,C. T. Foxon,J. Wunderlich,A. C. Irvine,V. Novák,K. Olejník,A. A. Kovalev,Jairo Sinova,T. Jungwirth,B. L. Gallagher###
(939957, 939957)
 These methods are used toexplore the unusual phenomenology of the AMR in ultra thin (5nm) (Ga,Mn)Aslayers and to demonstrate how the components of the AMR can be engineeredthrough lithography induced local lattice relaxations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 99, ',', 4]

Bi
###Magneto-transport and Magneto-dielectric effect in Bi-based Perovskite Manganites|Asish K. Kundu,R. Ranjith,V. Pralong,V. Caignaert,B. Raveau###
(940876, 940876)
Magneto-transport and Magneto-dielectric effect in Bi-based Perovskite Manganites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, -0.8, ',', 1],[107.0, 103, 'K', 2],[141.0, 181, 'K', 2],[204.0, 90, 'K', 3],[207.0, 70, 'kOe', 3],[215.0, 0.0, 'phase', 3],[317.0, 0.25, '%', 5],[321.0, 80, 'K', 5]

Co
###Magneto-transport and Magneto-dielectric effect in Bi-based Perovskite Manganites|Asish K. Kundu,R. Ranjith,V. Pralong,V. Caignaert,B. Raveau###
(940931, 940931)
 The effect of cobalt and nickel substitutions for manganese on the physicalproperties of the perovskite manganite La1.2Bi0.8Mn2-x<missing VAR>(Ni/Co)x<missing VAR>O6d<missing VAR>, with x<missing VAR> 0.0-0.8, has been investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, -0.8, ',', 0],[52.0, 103, 'K', 1],[86.0, 181, 'K', 1],[149.0, 90, 'K', 2],[152.0, 70, 'kOe', 2],[160.0, 0.0, 'phase', 2],[262.0, 0.25, '%', 4],[266.0, 80, 'K', 4]

O6
###Magneto-transport and Magneto-dielectric effect in Bi-based Perovskite Manganites|Asish K. Kundu,R. Ranjith,V. Pralong,V. Caignaert,B. Raveau###
(940934, 940935)
 The effect of cobalt and nickel substitutions for manganese on the physicalproperties of the perovskite manganite La1.2Bi0.8Mn2-x<missing VAR>(Ni/Co)x<missing VAR>O6d<missing VAR>, with x<missing VAR> 0.0-0.8, has been investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, -0.8, ',', 0],[48.0, 103, 'K', 1],[82.0, 181, 'K', 1],[145.0, 90, 'K', 2],[148.0, 70, 'kOe', 2],[156.0, 0.0, 'phase', 2],[258.0, 0.25, '%', 4],[262.0, 80, 'K', 4]

C
###Magneto-transport and Magneto-dielectric effect in Bi-based Perovskite Manganites|Asish K. Kundu,R. Ranjith,V. Pralong,V. Caignaert,B. Raveau###
(940976, 940976)
 It is observed that the ferromagnetism isenhanced, T<missing VAR>C being increased from 103 K for the parent compound (x<missing VAR>  0.0) to178 K for Ni-phase, and to 181 K for the Co-phase (x<missing VAR>  0.8).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, -0.8, ',', 1],[7.0, 103, 'K', 0],[41.0, 181, 'K', 0],[104.0, 90, 'K', 1],[107.0, 70, 'kOe', 1],[115.0, 0.0, 'phase', 1],[217.0, 0.25, '%', 3],[221.0, 80, 'K', 3]

K
###Magneto-transport and Magneto-dielectric effect in Bi-based Perovskite Manganites|Asish K. Kundu,R. Ranjith,V. Pralong,V. Caignaert,B. Raveau###
(941005, 941005)
 It is observed that the ferromagnetism isenhanced, T<missing VAR>C being increased from 103 K for the parent compound (x<missing VAR>  0.0) to178 K for Ni-phase, and to 181 K for the Co-phase (x<missing VAR>  0.8).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, -0.8, ',', 1],[22.0, 103, 'K', 0],[12.0, 181, 'K', 0],[75.0, 90, 'K', 1],[78.0, 70, 'kOe', 1],[86.0, 0.0, 'phase', 1],[188.0, 0.25, '%', 3],[192.0, 80, 'K', 3]

Ni
###Magneto-transport and Magneto-dielectric effect in Bi-based Perovskite Manganites|Asish K. Kundu,R. Ranjith,V. Pralong,V. Caignaert,B. Raveau###
(941009, 941009)
 It is observed that the ferromagnetism isenhanced, T<missing VAR>C being increased from 103 K for the parent compound (x<missing VAR>  0.0) to178 K for Ni-phase, and to 181 K for the Co-phase (x<missing VAR>  0.8).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, -0.8, ',', 1],[26.0, 103, 'K', 0],[8.0, 181, 'K', 0],[71.0, 90, 'K', 1],[74.0, 70, 'kOe', 1],[82.0, 0.0, 'phase', 1],[184.0, 0.25, '%', 3],[188.0, 80, 'K', 3]

Co
###Magneto-transport and Magneto-dielectric effect in Bi-based Perovskite Manganites|Asish K. Kundu,R. Ranjith,V. Pralong,V. Caignaert,B. Raveau###
(941023, 941023)
 It is observed that the ferromagnetism isenhanced, T<missing VAR>C being increased from 103 K for the parent compound (x<missing VAR>  0.0) to178 K for Ni-phase, and to 181 K for the Co-phase (x<missing VAR>  0.8).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, -0.8, ',', 1],[40.0, 103, 'K', 0],[6.0, 181, 'K', 0],[57.0, 90, 'K', 1],[60.0, 70, 'kOe', 1],[68.0, 0.0, 'phase', 1],[170.0, 0.25, '%', 3],[174.0, 80, 'K', 3]

Mn4/Ni2
###Magneto-transport and Magneto-dielectric effect in Bi-based Perovskite Manganites|Asish K. Kundu,R. Ranjith,V. Pralong,V. Caignaert,B. Raveau###
(941123, 941127)
 These phenomena are interpreted by means of electronic phaseseparation, where the ferromagnetic Mn4/Ni2 and Mn4/Co2 interactionsreinforce the Mn3/Mn4 interactions by super-exchange interaction.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[177.0, -0.8, ',', 3],[140.0, 103, 'K', 2],[106.0, 181, 'K', 2],[43.0, 90, 'K', 1],[40.0, 70, 'kOe', 1],[32.0, 0.0, 'phase', 1],[66.0, 0.25, '%', 1],[70.0, 80, 'K', 1]

Mn4/Co2
###Magneto-transport and Magneto-dielectric effect in Bi-based Perovskite Manganites|Asish K. Kundu,R. Ranjith,V. Pralong,V. Caignaert,B. Raveau###
(941131, 941135)
 These phenomena are interpreted by means of electronic phaseseparation, where the ferromagnetic Mn4/Ni2 and Mn4/Co2 interactionsreinforce the Mn3/Mn4 interactions by super-exchange interaction.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[185.0, -0.8, ',', 3],[148.0, 103, 'K', 2],[114.0, 181, 'K', 2],[51.0, 90, 'K', 1],[48.0, 70, 'kOe', 1],[40.0, 0.0, 'phase', 1],[58.0, 0.25, '%', 1],[62.0, 80, 'K', 1]

Mn3/Mn4
###Magneto-transport and Magneto-dielectric effect in Bi-based Perovskite Manganites|Asish K. Kundu,R. Ranjith,V. Pralong,V. Caignaert,B. Raveau###
(941144, 941148)
 These phenomena are interpreted by means of electronic phaseseparation, where the ferromagnetic Mn4/Ni2 and Mn4/Co2 interactionsreinforce the Mn3/Mn4 interactions by super-exchange interaction.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[198.0, -0.8, ',', 3],[161.0, 103, 'K', 2],[127.0, 181, 'K', 2],[64.0, 90, 'K', 1],[61.0, 70, 'kOe', 1],[53.0, 0.0, 'phase', 1],[45.0, 0.25, '%', 1],[49.0, 80, 'K', 1]

GaMnAs
###GaMnAs-based hybrid multiferroic memory device|M. Overby,A. Chernyshov,L. P. Rokhinson,X. Liu,J. K. Furdyna###
(941226, 941228)
GaMnAs-based hybrid multiferroic memory device.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaMnAs
###GaMnAs-based hybrid multiferroic memory device|M. Overby,A. Chernyshov,L. P. Rokhinson,X. Liu,J. K. Furdyna###
(941401, 941403)
 Here we report a novel non-volatile hybrid multiferroic memorycell with electrostatic control of magnetization based on strain-coupled GaMnAsferromagnetic semiconductor and a piezoelectric material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaMnAs
###GaMnAs-based hybrid multiferroic memory device|M. Overby,A. Chernyshov,L. P. Rokhinson,X. Liu,J. K. Furdyna###
(941432, 941434)
 We use thecrystalline anisotropy of GaMnAs to store information in the orientation of themagnetization along one of the two easy axes, which is monitored via transverseanisotropic magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaMnAs
###GaMnAs-based hybrid multiferroic memory device|M. Overby,A. Chernyshov,L. P. Rokhinson,X. Liu,J. K. Furdyna###
(941522, 941524)
 The magnetization orientation is switched byapplying voltage to the piezoelectric material and tuning magnetic anisotropyof GaMnAs via the resulting stress field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Low temperature electron-phonon resonance in dc-current-biased two-dimensional electron systems|X. L. Lei###
(941675, 941676)
 Theexperimentally observed resonances in linear resistivity are shown to resultfrom the conventional bulk phonon modes in a GaAs-based system, withoutinvoking leaky interface phonons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Low temperature electron-phonon resonance in dc-current-biased two-dimensional electron systems|X. L. Lei###
(941776, 941776)
 As a result, remarkableresistance oscillation and negative differential resistivity can appear innonlinear transport in a modest mobility sample at low temperatures, which isin agreement with recent experiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaMnO3
###Large Magnetoresistance in a Manganite Spin-Tunnel-Junction Using LaMnO3 as Insulating Barrier|S. Yunoki,E. Dagotto,S. Costamagna,J. A. Riera###
(941868, 941871)
Large Magnetoresistance in a Manganite Spin-Tunnel-Junction Using LaMnO3 as Insulating Barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La1-xSr
###Large Magnetoresistance in a Manganite Spin-Tunnel-Junction Using LaMnO3 as Insulating Barrier|S. Yunoki,E. Dagotto,S. Costamagna,J. A. Riera###
(941897, 941901)
 A spin-tunnel-junction based on manganites, with La1-xSrx<missing VAR>MnO3(LSMO) as ferromagnetic metallic electrodes and the undoped parent compoundLaMnO3 (LMO) as insulating barrier, is here theoretically discussed usingdouble exchange model Hamiltonians and numerical techniques.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

MnO3
###Large Magnetoresistance in a Manganite Spin-Tunnel-Junction Using LaMnO3 as Insulating Barrier|S. Yunoki,E. Dagotto,S. Costamagna,J. A. Riera###
(941903, 941905)
 A spin-tunnel-junction based on manganites, with La1-xSrx<missing VAR>MnO3(LSMO) as ferromagnetic metallic electrodes and the undoped parent compoundLaMnO3 (LMO) as insulating barrier, is here theoretically discussed usingdouble exchange model Hamiltonians and numerical techniques.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Large Magnetoresistance in a Manganite Spin-Tunnel-Junction Using LaMnO3 as Insulating Barrier|S. Yunoki,E. Dagotto,S. Costamagna,J. A. Riera###
(941912, 941912)
 A spin-tunnel-junction based on manganites, with La1-xSrx<missing VAR>MnO3(LSMO) as ferromagnetic metallic electrodes and the undoped parent compoundLaMnO3 (LMO) as insulating barrier, is here theoretically discussed usingdouble exchange model Hamiltonians and numerical techniques.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaMnO3
###Large Magnetoresistance in a Manganite Spin-Tunnel-Junction Using LaMnO3 as Insulating Barrier|S. Yunoki,E. Dagotto,S. Costamagna,J. A. Riera###
(941934, 941937)
 A spin-tunnel-junction based on manganites, with La1-xSrx<missing VAR>MnO3(LSMO) as ferromagnetic metallic electrodes and the undoped parent compoundLaMnO3 (LMO) as insulating barrier, is here theoretically discussed usingdouble exchange model Hamiltonians and numerical techniques.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Large Magnetoresistance in a Manganite Spin-Tunnel-Junction Using LaMnO3 as Insulating Barrier|S. Yunoki,E. Dagotto,S. Costamagna,J. A. Riera###
(941942, 941942)
 A spin-tunnel-junction based on manganites, with La1-xSrx<missing VAR>MnO3(LSMO) as ferromagnetic metallic electrodes and the undoped parent compoundLaMnO3 (LMO) as insulating barrier, is here theoretically discussed usingdouble exchange model Hamiltonians and numerical techniques.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Large Magnetoresistance in a Manganite Spin-Tunnel-Junction Using LaMnO3 as Insulating Barrier|S. Yunoki,E. Dagotto,S. Costamagna,J. A. Riera###
(941991, 941991)
 For an even numberof LMO layers, the ground state is shown to have anti-parallel LSMO magneticmoments.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Large Magnetoresistance in a Manganite Spin-Tunnel-Junction Using LaMnO3 as Insulating Barrier|S. Yunoki,E. Dagotto,S. Costamagna,J. A. Riera###
(942017, 942017)
 For an even numberof LMO layers, the ground state is shown to have anti-parallel LSMO magneticmoments.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Large Magnetoresistance in a Manganite Spin-Tunnel-Junction Using LaMnO3 as Insulating Barrier|S. Yunoki,E. Dagotto,S. Costamagna,J. A. Riera###
(942064, 942064)
 This highly resistive, but fragile, state is easily destabilized bysmall magnetic fields, which orient the LSMO moments in the direction of thefield.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Large Magnetoresistance in a Manganite Spin-Tunnel-Junction Using LaMnO3 as Insulating Barrier|S. Yunoki,E. Dagotto,S. Costamagna,J. A. Riera###
(942149, 942149)
 Theinfluence of temperature, the case of an odd number of LMO layers, and thedifferences between LMO and SrTiO3 as barriers are also addressed.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Large Magnetoresistance in a Manganite Spin-Tunnel-Junction Using LaMnO3 as Insulating Barrier|S. Yunoki,E. Dagotto,S. Costamagna,J. A. Riera###
(942165, 942165)
 Theinfluence of temperature, the case of an odd number of LMO layers, and thedifferences between LMO and SrTiO3 as barriers are also addressed.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Large Magnetoresistance in a Manganite Spin-Tunnel-Junction Using LaMnO3 as Insulating Barrier|S. Yunoki,E. Dagotto,S. Costamagna,J. A. Riera###
(942169, 942172)
 Theinfluence of temperature, the case of an odd number of LMO layers, and thedifferences between LMO and SrTiO3 as barriers are also addressed.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Giant orbital moments are responsible for the anisotropic magnetoresistance of atomic contacts|Gabriel Autes,Cyrille Barreteau,Marie-Catherine Desjonquères,Daniel Spanjaard,Michel Viret###
(942373, 942373)
 In both states giant orbital moments appear on the lowcoordinated central atom in a realistic contact geometry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 3, 'd', 2]

Ga
###Advanced resistivity model for arbitrary magnetization orientation applied to a series of compressive- to tensile-strained (Ga,Mn)As layers|W. Limmer,J. Daeubler,L. Dreher,M. Glunk,W. Schoch,S. Schwaiger,R. Sauer###
(942555, 942555)
Advanced resistivity model for arbitrary magnetization orientation applied to a series of compressive- to tensile-strained (Ga,Mn)As layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Advanced resistivity model for arbitrary magnetization orientation applied to a series of compressive- to tensile-strained (Ga,Mn)As layers|W. Limmer,J. Daeubler,L. Dreher,M. Glunk,W. Schoch,S. Schwaiger,R. Sauer###
(942557, 942557)
Advanced resistivity model for arbitrary magnetization orientation applied to a series of compressive- to tensile-strained (Ga,Mn)As layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Advanced resistivity model for arbitrary magnetization orientation applied to a series of compressive- to tensile-strained (Ga,Mn)As layers|W. Limmer,J. Daeubler,L. Dreher,M. Glunk,W. Schoch,S. Schwaiger,R. Sauer###
(942559, 942559)
Advanced resistivity model for arbitrary magnetization orientation applied to a series of compressive- to tensile-strained (Ga,Mn)As layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###Advanced resistivity model for arbitrary magnetization orientation applied to a series of compressive- to tensile-strained (Ga,Mn)As layers|W. Limmer,J. Daeubler,L. Dreher,M. Glunk,W. Schoch,S. Schwaiger,R. Sauer###
(942582, 942582)
 The longitudinal and transverse resistivities of differently strained(Ga,Mn)As layers are theoretically and experimentally studied as a function ofthe magnetization orientation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Advanced resistivity model for arbitrary magnetization orientation applied to a series of compressive- to tensile-strained (Ga,Mn)As layers|W. Limmer,J. Daeubler,L. Dreher,M. Glunk,W. Schoch,S. Schwaiger,R. Sauer###
(942584, 942584)
 The longitudinal and transverse resistivities of differently strained(Ga,Mn)As layers are theoretically and experimentally studied as a function ofthe magnetization orientation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Advanced resistivity model for arbitrary magnetization orientation applied to a series of compressive- to tensile-strained (Ga,Mn)As layers|W. Limmer,J. Daeubler,L. Dreher,M. Glunk,W. Schoch,S. Schwaiger,R. Sauer###
(942586, 942586)
 The longitudinal and transverse resistivities of differently strained(Ga,Mn)As layers are theoretically and experimentally studied as a function ofthe magnetization orientation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###Advanced resistivity model for arbitrary magnetization orientation applied to a series of compressive- to tensile-strained (Ga,Mn)As layers|W. Limmer,J. Daeubler,L. Dreher,M. Glunk,W. Schoch,S. Schwaiger,R. Sauer###
(942629, 942629)
 The strain in the series of (Ga,Mn)As layers isgradually varied from compressive to tensile using (In,Ga)As templates withdifferent In concentrations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Advanced resistivity model for arbitrary magnetization orientation applied to a series of compressive- to tensile-strained (Ga,Mn)As layers|W. Limmer,J. Daeubler,L. Dreher,M. Glunk,W. Schoch,S. Schwaiger,R. Sauer###
(942631, 942631)
 The strain in the series of (Ga,Mn)As layers isgradually varied from compressive to tensile using (In,Ga)As templates withdifferent In concentrations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Advanced resistivity model for arbitrary magnetization orientation applied to a series of compressive- to tensile-strained (Ga,Mn)As layers|W. Limmer,J. Daeubler,L. Dreher,M. Glunk,W. Schoch,S. Schwaiger,R. Sauer###
(942633, 942633)
 The strain in the series of (Ga,Mn)As layers isgradually varied from compressive to tensile using (In,Ga)As templates withdifferent In concentrations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Advanced resistivity model for arbitrary magnetization orientation applied to a series of compressive- to tensile-strained (Ga,Mn)As layers|W. Limmer,J. Daeubler,L. Dreher,M. Glunk,W. Schoch,S. Schwaiger,R. Sauer###
(942655, 942655)
 The strain in the series of (Ga,Mn)As layers isgradually varied from compressive to tensile using (In,Ga)As templates withdifferent In concentrations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###Advanced resistivity model for arbitrary magnetization orientation applied to a series of compressive- to tensile-strained (Ga,Mn)As layers|W. Limmer,J. Daeubler,L. Dreher,M. Glunk,W. Schoch,S. Schwaiger,R. Sauer###
(942657, 942657)
 The strain in the series of (Ga,Mn)As layers isgradually varied from compressive to tensile using (In,Ga)As templates withdifferent In concentrations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Advanced resistivity model for arbitrary magnetization orientation applied to a series of compressive- to tensile-strained (Ga,Mn)As layers|W. Limmer,J. Daeubler,L. Dreher,M. Glunk,W. Schoch,S. Schwaiger,R. Sauer###
(942659, 942659)
 The strain in the series of (Ga,Mn)As layers isgradually varied from compressive to tensile using (In,Ga)As templates withdifferent In concentrations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Advanced resistivity model for arbitrary magnetization orientation applied to a series of compressive- to tensile-strained (Ga,Mn)As layers|W. Limmer,J. Daeubler,L. Dreher,M. Glunk,W. Schoch,S. Schwaiger,R. Sauer###
(942668, 942668)
 The strain in the series of (Ga,Mn)As layers isgradually varied from compressive to tensile using (In,Ga)As templates withdifferent In concentrations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Advanced resistivity model for arbitrary magnetization orientation applied to a series of compressive- to tensile-strained (Ga,Mn)As layers|W. Limmer,J. Daeubler,L. Dreher,M. Glunk,W. Schoch,S. Schwaiger,R. Sauer###
(942724, 942724)
 In order to quantitatively model theexperimental data, terms up to the fourth order have to be included.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###Lithographically and electrically controlled strain effects on anisotropic magnetoresistance in (Ga,Mn)As|E. De Ranieri,A. W. Rushforth,K. Vyborny,U. Rana,E. Ahmed,R. P. Campion,C. T. Foxon,B. L. Gallagher,A. C. Irvine,J. Wunderlich,T. Jungwirth###
(942925, 942925)
Lithographically and electrically controlled strain effects on anisotropic magnetoresistance in (Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Lithographically and electrically controlled strain effects on anisotropic magnetoresistance in (Ga,Mn)As|E. De Ranieri,A. W. Rushforth,K. Vyborny,U. Rana,E. Ahmed,R. P. Campion,C. T. Foxon,B. L. Gallagher,A. C. Irvine,J. Wunderlich,T. Jungwirth###
(942927, 942927)
Lithographically and electrically controlled strain effects on anisotropic magnetoresistance in (Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Lithographically and electrically controlled strain effects on anisotropic magnetoresistance in (Ga,Mn)As|E. De Ranieri,A. W. Rushforth,K. Vyborny,U. Rana,E. Ahmed,R. P. Campion,C. T. Foxon,B. L. Gallagher,A. C. Irvine,J. Wunderlich,T. Jungwirth###
(942929, 942929)
Lithographically and electrically controlled strain effects on anisotropic magnetoresistance in (Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###Lithographically and electrically controlled strain effects on anisotropic magnetoresistance in (Ga,Mn)As|E. De Ranieri,A. W. Rushforth,K. Vyborny,U. Rana,E. Ahmed,R. P. Campion,C. T. Foxon,B. L. Gallagher,A. C. Irvine,J. Wunderlich,T. Jungwirth###
(942949, 942949)
 It has been demonstrated that magnetocrystalline anisotropies in (Ga,Mn)Asare sensitive to lattice strains as small as 10-4 and that strain can becontrolled by lattice parameter engineering during growth, through post growthlithography, and electrically by bonding the (Ga,Mn)As sample to apiezoelectric transducer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Lithographically and electrically controlled strain effects on anisotropic magnetoresistance in (Ga,Mn)As|E. De Ranieri,A. W. Rushforth,K. Vyborny,U. Rana,E. Ahmed,R. P. Campion,C. T. Foxon,B. L. Gallagher,A. C. Irvine,J. Wunderlich,T. Jungwirth###
(942951, 942951)
 It has been demonstrated that magnetocrystalline anisotropies in (Ga,Mn)Asare sensitive to lattice strains as small as 10-4 and that strain can becontrolled by lattice parameter engineering during growth, through post growthlithography, and electrically by bonding the (Ga,Mn)As sample to apiezoelectric transducer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Lithographically and electrically controlled strain effects on anisotropic magnetoresistance in (Ga,Mn)As|E. De Ranieri,A. W. Rushforth,K. Vyborny,U. Rana,E. Ahmed,R. P. Campion,C. T. Foxon,B. L. Gallagher,A. C. Irvine,J. Wunderlich,T. Jungwirth###
(942953, 942953)
 It has been demonstrated that magnetocrystalline anisotropies in (Ga,Mn)Asare sensitive to lattice strains as small as 10-4 and that strain can becontrolled by lattice parameter engineering during growth, through post growthlithography, and electrically by bonding the (Ga,Mn)As sample to apiezoelectric transducer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###Lithographically and electrically controlled strain effects on anisotropic magnetoresistance in (Ga,Mn)As|E. De Ranieri,A. W. Rushforth,K. Vyborny,U. Rana,E. Ahmed,R. P. Campion,C. T. Foxon,B. L. Gallagher,A. C. Irvine,J. Wunderlich,T. Jungwirth###
(943023, 943023)
 It has been demonstrated that magnetocrystalline anisotropies in (Ga,Mn)Asare sensitive to lattice strains as small as 10-4 and that strain can becontrolled by lattice parameter engineering during growth, through post growthlithography, and electrically by bonding the (Ga,Mn)As sample to apiezoelectric transducer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Lithographically and electrically controlled strain effects on anisotropic magnetoresistance in (Ga,Mn)As|E. De Ranieri,A. W. Rushforth,K. Vyborny,U. Rana,E. Ahmed,R. P. Campion,C. T. Foxon,B. L. Gallagher,A. C. Irvine,J. Wunderlich,T. Jungwirth###
(943025, 943025)
 It has been demonstrated that magnetocrystalline anisotropies in (Ga,Mn)Asare sensitive to lattice strains as small as 10-4 and that strain can becontrolled by lattice parameter engineering during growth, through post growthlithography, and electrically by bonding the (Ga,Mn)As sample to apiezoelectric transducer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Lithographically and electrically controlled strain effects on anisotropic magnetoresistance in (Ga,Mn)As|E. De Ranieri,A. W. Rushforth,K. Vyborny,U. Rana,E. Ahmed,R. P. Campion,C. T. Foxon,B. L. Gallagher,A. C. Irvine,J. Wunderlich,T. Jungwirth###
(943027, 943027)
 It has been demonstrated that magnetocrystalline anisotropies in (Ga,Mn)Asare sensitive to lattice strains as small as 10-4 and that strain can becontrolled by lattice parameter engineering during growth, through post growthlithography, and electrically by bonding the (Ga,Mn)As sample to apiezoelectric transducer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Lithographically and electrically controlled strain effects on anisotropic magnetoresistance in (Ga,Mn)As|E. De Ranieri,A. W. Rushforth,K. Vyborny,U. Rana,E. Ahmed,R. P. Campion,C. T. Foxon,B. L. Gallagher,A. C. Irvine,J. Wunderlich,T. Jungwirth###
(943041, 943041)
 In this work we show that analogous effects areobserved in crystalline components of the anisotropic magnetoresistance (AMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###Lithographically and electrically controlled strain effects on anisotropic magnetoresistance in (Ga,Mn)As|E. De Ranieri,A. W. Rushforth,K. Vyborny,U. Rana,E. Ahmed,R. P. Campion,C. T. Foxon,B. L. Gallagher,A. C. Irvine,J. Wunderlich,T. Jungwirth###
(943151, 943151)
Lithographically or electrically induced strain variations can producecrystalline AMR components which are larger than the crystalline AMR and asignificant fraction of the total AMR of the unprocessed (Ga,Mn)As material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Lithographically and electrically controlled strain effects on anisotropic magnetoresistance in (Ga,Mn)As|E. De Ranieri,A. W. Rushforth,K. Vyborny,U. Rana,E. Ahmed,R. P. Campion,C. T. Foxon,B. L. Gallagher,A. C. Irvine,J. Wunderlich,T. Jungwirth###
(943153, 943153)
Lithographically or electrically induced strain variations can producecrystalline AMR components which are larger than the crystalline AMR and asignificant fraction of the total AMR of the unprocessed (Ga,Mn)As material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Lithographically and electrically controlled strain effects on anisotropic magnetoresistance in (Ga,Mn)As|E. De Ranieri,A. W. Rushforth,K. Vyborny,U. Rana,E. Ahmed,R. P. Campion,C. T. Foxon,B. L. Gallagher,A. C. Irvine,J. Wunderlich,T. Jungwirth###
(943155, 943155)
Lithographically or electrically induced strain variations can producecrystalline AMR components which are larger than the crystalline AMR and asignificant fraction of the total AMR of the unprocessed (Ga,Mn)As material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Lithographically and electrically controlled strain effects on anisotropic magnetoresistance in (Ga,Mn)As|E. De Ranieri,A. W. Rushforth,K. Vyborny,U. Rana,E. Ahmed,R. P. Campion,C. T. Foxon,B. L. Gallagher,A. C. Irvine,J. Wunderlich,T. Jungwirth###
(943160, 943160)
 Inthese experiments we also observe new higher order terms in thephenomenological AMR expressions and find that strain variation effects canplay important role in the micromagnetic and magnetotransport characteristicsof (Ga,Mn)As lateral nanoconstrictions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###Lithographically and electrically controlled strain effects on anisotropic magnetoresistance in (Ga,Mn)As|E. De Ranieri,A. W. Rushforth,K. Vyborny,U. Rana,E. Ahmed,R. P. Campion,C. T. Foxon,B. L. Gallagher,A. C. Irvine,J. Wunderlich,T. Jungwirth###
(943231, 943231)
 Inthese experiments we also observe new higher order terms in thephenomenological AMR expressions and find that strain variation effects canplay important role in the micromagnetic and magnetotransport characteristicsof (Ga,Mn)As lateral nanoconstrictions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Lithographically and electrically controlled strain effects on anisotropic magnetoresistance in (Ga,Mn)As|E. De Ranieri,A. W. Rushforth,K. Vyborny,U. Rana,E. Ahmed,R. P. Campion,C. T. Foxon,B. L. Gallagher,A. C. Irvine,J. Wunderlich,T. Jungwirth###
(943233, 943233)
 Inthese experiments we also observe new higher order terms in thephenomenological AMR expressions and find that strain variation effects canplay important role in the micromagnetic and magnetotransport characteristicsof (Ga,Mn)As lateral nanoconstrictions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Lithographically and electrically controlled strain effects on anisotropic magnetoresistance in (Ga,Mn)As|E. De Ranieri,A. W. Rushforth,K. Vyborny,U. Rana,E. Ahmed,R. P. Campion,C. T. Foxon,B. L. Gallagher,A. C. Irvine,J. Wunderlich,T. Jungwirth###
(943235, 943235)
 Inthese experiments we also observe new higher order terms in thephenomenological AMR expressions and find that strain variation effects canplay important role in the micromagnetic and magnetotransport characteristicsof (Ga,Mn)As lateral nanoconstrictions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###Detailed transport investigation of the magnetic anisotropy of (Ga,Mn)As|K. Pappert,C. Gould,M. Sawicki,J. Wenisch,K. Brunner,G. Schmidt,L. W. Molenkamp###
(943267, 943267)
Detailed transport investigation of the magnetic anisotropy of (Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[223.0, 4, 'K', 5]

Mn
###Detailed transport investigation of the magnetic anisotropy of (Ga,Mn)As|K. Pappert,C. Gould,M. Sawicki,J. Wenisch,K. Brunner,G. Schmidt,L. W. Molenkamp###
(943269, 943269)
Detailed transport investigation of the magnetic anisotropy of (Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[221.0, 4, 'K', 5]

As
###Detailed transport investigation of the magnetic anisotropy of (Ga,Mn)As|K. Pappert,C. Gould,M. Sawicki,J. Wenisch,K. Brunner,G. Schmidt,L. W. Molenkamp###
(943271, 943271)
Detailed transport investigation of the magnetic anisotropy of (Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[219.0, 4, 'K', 5]

Ga
###Detailed transport investigation of the magnetic anisotropy of (Ga,Mn)As|K. Pappert,C. Gould,M. Sawicki,J. Wenisch,K. Brunner,G. Schmidt,L. W. Molenkamp###
(943295, 943295)
 This paper discusses transport methods for the investigation of the (Ga,Mn)Asmagnetic anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[195.0, 4, 'K', 4]

Mn
###Detailed transport investigation of the magnetic anisotropy of (Ga,Mn)As|K. Pappert,C. Gould,M. Sawicki,J. Wenisch,K. Brunner,G. Schmidt,L. W. Molenkamp###
(943297, 943297)
 This paper discusses transport methods for the investigation of the (Ga,Mn)Asmagnetic anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[193.0, 4, 'K', 4]

As
###Detailed transport investigation of the magnetic anisotropy of (Ga,Mn)As|K. Pappert,C. Gould,M. Sawicki,J. Wenisch,K. Brunner,G. Schmidt,L. W. Molenkamp###
(943299, 943299)
 This paper discusses transport methods for the investigation of the (Ga,Mn)Asmagnetic anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[191.0, 4, 'K', 4]

Ga
###Detailed transport investigation of the magnetic anisotropy of (Ga,Mn)As|K. Pappert,C. Gould,M. Sawicki,J. Wenisch,K. Brunner,G. Schmidt,L. W. Molenkamp###
(943383, 943383)
 We find that in all (Ga,Mn)As films studied,three anisotropy components are always present.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 4, 'K', 2]

Mn
###Detailed transport investigation of the magnetic anisotropy of (Ga,Mn)As|K. Pappert,C. Gould,M. Sawicki,J. Wenisch,K. Brunner,G. Schmidt,L. W. Molenkamp###
(943385, 943385)
 We find that in all (Ga,Mn)As films studied,three anisotropy components are always present.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 4, 'K', 2]

As
###Detailed transport investigation of the magnetic anisotropy of (Ga,Mn)As|K. Pappert,C. Gould,M. Sawicki,J. Wenisch,K. Brunner,G. Schmidt,L. W. Molenkamp###
(943387, 943387)
 We find that in all (Ga,Mn)As films studied,three anisotropy components are always present.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 4, 'K', 2]

Ga
###Detailed transport investigation of the magnetic anisotropy of (Ga,Mn)As|K. Pappert,C. Gould,M. Sawicki,J. Wenisch,K. Brunner,G. Schmidt,L. W. Molenkamp###
(943479, 943479)
 Various fingerprints oftypical (Ga,Mn)As transport samples at 4 K are included to illustrate thevariation of the relative strength of these anisotropy terms.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 4, 'K', 0]

Mn
###Detailed transport investigation of the magnetic anisotropy of (Ga,Mn)As|K. Pappert,C. Gould,M. Sawicki,J. Wenisch,K. Brunner,G. Schmidt,L. W. Molenkamp###
(943481, 943481)
 Various fingerprints oftypical (Ga,Mn)As transport samples at 4 K are included to illustrate thevariation of the relative strength of these anisotropy terms.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 4, 'K', 0]

As
###Detailed transport investigation of the magnetic anisotropy of (Ga,Mn)As|K. Pappert,C. Gould,M. Sawicki,J. Wenisch,K. Brunner,G. Schmidt,L. W. Molenkamp###
(943483, 943483)
 Various fingerprints oftypical (Ga,Mn)As transport samples at 4 K are included to illustrate thevariation of the relative strength of these anisotropy terms.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 4, 'K', 0]

UPt3
###The Fermi surface and f-valence electron count of UPt3|G. J. McMullan,P. M. C. Rourke,M. R. Norman,A. D. Huxley,N. Doiron-Leyraud,J. Flouquet,G. G. Lonzarich,A. McCollam,S. R. Julian###
(943597, 943599)
The Fermi surface and f<missing VAR>-valence electron count of UPt3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0
[91.0, 5, 'f', 2]

UPt3
###The Fermi surface and f-valence electron count of UPt3|G. J. McMullan,P. M. C. Rourke,M. R. Norman,A. D. Huxley,N. Doiron-Leyraud,J. Flouquet,G. G. Lonzarich,A. McCollam,S. R. Julian###
(943663, 943665)
 Combining old and new de Haas-van Alphen (d<missing VAR>HvA) and magnetoresistance data,we arrive at a detailed picture of the Fermi surface of the heavy fermionsuperconductor UPt3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0
[25.0, 5, 'f', 1]

UPt3
###The Fermi surface and f-valence electron count of UPt3|G. J. McMullan,P. M. C. Rourke,M. R. Norman,A. D. Huxley,N. Doiron-Leyraud,J. Flouquet,G. G. Lonzarich,A. McCollam,S. R. Julian###
(943704, 943706)
 Our work was partially motivated by a new proposal thattwo 5f valence electrons per formula unit in UPt3 are localized by correlationeffects -- agreement with previous d<missing VAR>HvA measurements of the Fermi surface wasinvoked in its support.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0
[14.0, 5, 'f', 0]

UPt3
###The Fermi surface and f-valence electron count of UPt3|G. J. McMullan,P. M. C. Rourke,M. R. Norman,A. D. Huxley,N. Doiron-Leyraud,J. Flouquet,G. G. Lonzarich,A. McCollam,S. R. Julian###
(943847, 943849)
 Comprehensive comparison with our new observationsshows that this partially localized model fails to predict the existence of amajor sheet of the Fermi surface, and is therefore less compatible withexperiment than the originally proposed fully itinerant model of theelectronic structure of UPt3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0
[157.0, 5, 'f', 1]

In
###The Fermi surface and f-valence electron count of UPt3|G. J. McMullan,P. M. C. Rourke,M. R. Norman,A. D. Huxley,N. Doiron-Leyraud,J. Flouquet,G. G. Lonzarich,A. McCollam,S. R. Julian###
(943852, 943852)
 In support of this conclusion, we offer a morecomplete analysis of the fully itinerant band structure calculation, where wefind a number of previously unrecognized extremal orbits on the Fermi surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 5, 'f', 2]

O
###Quantum interference and weak localisation effects in the interlayer magnetoresistance of layered metals|Malcolm P. Kennett,Ross. H. McKenzie###
(943972, 943972)
 Studies of angle-dependent magnetoresistance oscillations (AMRO) in theinterlayer conductivity of layered metals have generally consideredsemi-classical electron transport.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Quantum interference and weak localisation effects in the interlayer magnetoresistance of layered metals|Malcolm P. Kennett,Ross. H. McKenzie###
(944142, 944142)
 Inparticular, our results may be applicable to effects that have been seen whenthe applied magnetic field is almost parallel to the conducting layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.7Ca0.3Mn1
###Effects of dilution on magnetic and transport properties of La0.7Ca0.3Mn1-xM'xO3|D. N. H. Nam,H. S. Hong,N. V. Khien,N. V. Dai,T. D. Thanh,L. T. C. Tuong,L. V. Hong,N. X. Phuc###
(944293, 944298)
Effects of dilution on magnetic and transport properties of La0.7Ca0.3Mn1-xMxO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.35,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[174.0, 73, ',', 5],[226.0, 1.0, 'These', 6]

O3
###Effects of dilution on magnetic and transport properties of La0.7Ca0.3Mn1-xM'xO3|D. N. H. Nam,H. S. Hong,N. V. Khien,N. V. Dai,T. D. Thanh,L. T. C. Tuong,L. V. Hong,N. X. Phuc###
(944303, 944304)
Effects of dilution on magnetic and transport properties of La0.7Ca0.3Mn1-xMxO3.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[168.0, 73, ',', 5],[220.0, 1.0, 'These', 6]

La0.7Ca0.3Mn1
###Effects of dilution on magnetic and transport properties of La0.7Ca0.3Mn1-xM'xO3|D. N. H. Nam,H. S. Hong,N. V. Khien,N. V. Dai,T. D. Thanh,L. T. C. Tuong,L. V. Hong,N. X. Phuc###
(944317, 944322)
 Magnetic and transport properties of La0.7Ca0.3Mn1-xMxO3 (M<missing VAR>Al,Ti) arestudied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.35,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 73, ',', 4],[202.0, 1.0, 'These', 5]

O3
###Effects of dilution on magnetic and transport properties of La0.7Ca0.3Mn1-xM'xO3|D. N. H. Nam,H. S. Hong,N. V. Khien,N. V. Dai,T. D. Thanh,L. T. C. Tuong,L. V. Hong,N. X. Phuc###
(944327, 944328)
 Magnetic and transport properties of La0.7Ca0.3Mn1-xMxO3 (M<missing VAR>Al,Ti) arestudied.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 73, ',', 4],[196.0, 1.0, 'These', 5]

Al
###Effects of dilution on magnetic and transport properties of La0.7Ca0.3Mn1-xM'xO3|D. N. H. Nam,H. S. Hong,N. V. Khien,N. V. Dai,T. D. Thanh,L. T. C. Tuong,L. V. Hong,N. X. Phuc###
(944332, 944332)
 Magnetic and transport properties of La0.7Ca0.3Mn1-xMxO3 (M<missing VAR>Al,Ti) arestudied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 73, ',', 4],[192.0, 1.0, 'These', 5]

Ti
###Effects of dilution on magnetic and transport properties of La0.7Ca0.3Mn1-xM'xO3|D. N. H. Nam,H. S. Hong,N. V. Khien,N. V. Dai,T. D. Thanh,L. T. C. Tuong,L. V. Hong,N. X. Phuc###
(944334, 944334)
 Magnetic and transport properties of La0.7Ca0.3Mn1-xMxO3 (M<missing VAR>Al,Ti) arestudied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 73, ',', 4],[190.0, 1.0, 'These', 5]

Mn
###Effects of dilution on magnetic and transport properties of La0.7Ca0.3Mn1-xM'xO3|D. N. H. Nam,H. S. Hong,N. V. Khien,N. V. Dai,T. D. Thanh,L. T. C. Tuong,L. V. Hong,N. X. Phuc###
(944351, 944351)
 The dilution of the Mn lattice results in a weakening of theferromagnetism, a deterioration of the metallic conductivity, and a strongenhancement of the magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 73, ',', 3],[173.0, 1.0, 'These', 4]

Tc
###Effects of dilution on magnetic and transport properties of La0.7Ca0.3Mn1-xM'xO3|D. N. H. Nam,H. S. Hong,N. V. Khien,N. V. Dai,T. D. Thanh,L. T. C. Tuong,L. V. Hong,N. X. Phuc###
(944402, 944402)
 Although Tc linearly decreases with x<missing VAR> inthe low substitution ranges for both M<missing VAR> series, the scaling behavior Tc(np)previously observed for La0.7Sr0.3Mn1-xMxO3 [Phys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 73, ',', 2],[122.0, 1.0, 'These', 3]

Tc
###Effects of dilution on magnetic and transport properties of La0.7Ca0.3Mn1-xM'xO3|D. N. H. Nam,H. S. Hong,N. V. Khien,N. V. Dai,T. D. Thanh,L. T. C. Tuong,L. V. Hong,N. X. Phuc###
(944438, 944438)
 Although Tc linearly decreases with x<missing VAR> inthe low substitution ranges for both M<missing VAR> series, the scaling behavior Tc(np)previously observed for La0.7Sr0.3Mn1-xMxO3 [Phys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 73, ',', 2],[86.0, 1.0, 'These', 3]

La0.7Sr0.3Mn1
###Effects of dilution on magnetic and transport properties of La0.7Ca0.3Mn1-xM'xO3|D. N. H. Nam,H. S. Hong,N. V. Khien,N. V. Dai,T. D. Thanh,L. T. C. Tuong,L. V. Hong,N. X. Phuc###
(944450, 944455)
 Although Tc linearly decreases with x<missing VAR> inthe low substitution ranges for both M<missing VAR> series, the scaling behavior Tc(np)previously observed for La0.7Sr0.3Mn1-xMxO3 [Phys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.35,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 73, ',', 2],[69.0, 1.0, 'These', 3]

O3
###Effects of dilution on magnetic and transport properties of La0.7Ca0.3Mn1-xM'xO3|D. N. H. Nam,H. S. Hong,N. V. Khien,N. V. Dai,T. D. Thanh,L. T. C. Tuong,L. V. Hong,N. X. Phuc###
(944460, 944461)
 Although Tc linearly decreases with x<missing VAR> inthe low substitution ranges for both M<missing VAR> series, the scaling behavior Tc(np)previously observed for La0.7Sr0.3Mn1-xMxO3 [Phys.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 73, ',', 2],[63.0, 1.0, 'These', 3]

B
###Effects of dilution on magnetic and transport properties of La0.7Ca0.3Mn1-xM'xO3|D. N. H. Nam,H. S. Hong,N. V. Khien,N. V. Dai,T. D. Thanh,L. T. C. Tuong,L. V. Hong,N. X. Phuc###
(944470, 944470)
 B 73, 184403 (2006)]is no longer obtained.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 73, ',', 0],[54.0, 1.0, 'These', 1]

Tc
###Effects of dilution on magnetic and transport properties of La0.7Ca0.3Mn1-xM'xO3|D. N. H. Nam,H. S. Hong,N. V. Khien,N. V. Dai,T. D. Thanh,L. T. C. Tuong,L. V. Hong,N. X. Phuc###
(944498, 944498)
 Extrapolations of the Tc(np) linear curves to Tc0 givenp values much smaller than 1. These results suggest that, according to amolecular-field approximation, antiferromagnetic superexchange between Mn ionsis significant in La0.7Ca0.3MnO3, in contrast to what observed inLa0.7Sr0.3MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 73, ',', 1],[26.0, 1.0, 'These', 0]

Tc0
###Effects of dilution on magnetic and transport properties of La0.7Ca0.3Mn1-xM'xO3|D. N. H. Nam,H. S. Hong,N. V. Khien,N. V. Dai,T. D. Thanh,L. T. C. Tuong,L. V. Hong,N. X. Phuc###
(944509, 944510)
 Extrapolations of the Tc(np) linear curves to Tc0 givenp values much smaller than 1. These results suggest that, according to amolecular-field approximation, antiferromagnetic superexchange between Mn ionsis significant in La0.7Ca0.3MnO3, in contrast to what observed inLa0.7Sr0.3MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 73, ',', 1],[14.0, 1.0, 'These', 0]

Mn
###Effects of dilution on magnetic and transport properties of La0.7Ca0.3Mn1-xM'xO3|D. N. H. Nam,H. S. Hong,N. V. Khien,N. V. Dai,T. D. Thanh,L. T. C. Tuong,L. V. Hong,N. X. Phuc###
(944553, 944553)
 Extrapolations of the Tc(np) linear curves to Tc0 givenp values much smaller than 1. These results suggest that, according to amolecular-field approximation, antiferromagnetic superexchange between Mn ionsis significant in La0.7Ca0.3MnO3, in contrast to what observed inLa0.7Sr0.3MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 73, ',', 1],[29.0, 1.0, 'These', 0]

La0.7Ca0.3MnO3
###Effects of dilution on magnetic and transport properties of La0.7Ca0.3Mn1-xM'xO3|D. N. H. Nam,H. S. Hong,N. V. Khien,N. V. Dai,T. D. Thanh,L. T. C. Tuong,L. V. Hong,N. X. Phuc###
(944564, 944570)
 Extrapolations of the Tc(np) linear curves to Tc0 givenp values much smaller than 1. These results suggest that, according to amolecular-field approximation, antiferromagnetic superexchange between Mn ionsis significant in La0.7Ca0.3MnO3, in contrast to what observed inLa0.7Sr0.3MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 73, ',', 1],[40.0, 1.0, 'These', 0]

La0.7Sr0.3MnO3
###Effects of dilution on magnetic and transport properties of La0.7Ca0.3Mn1-xM'xO3|D. N. H. Nam,H. S. Hong,N. V. Khien,N. V. Dai,T. D. Thanh,L. T. C. Tuong,L. V. Hong,N. X. Phuc###
(944586, 944592)
 Extrapolations of the Tc(np) linear curves to Tc0 givenp values much smaller than 1. These results suggest that, according to amolecular-field approximation, antiferromagnetic superexchange between Mn ionsis significant in La0.7Ca0.3MnO3, in contrast to what observed inLa0.7Sr0.3MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 73, ',', 1],[62.0, 1.0, 'These', 0]

Al
###Effects of dilution on magnetic and transport properties of La0.7Ca0.3Mn1-xM'xO3|D. N. H. Nam,H. S. Hong,N. V. Khien,N. V. Dai,T. D. Thanh,L. T. C. Tuong,L. V. Hong,N. X. Phuc###
(944606, 944606)
 Additionally, structural data of the Al-substituted samplessuggest that variations of the eg-electron bandwidth W cannot explain thedecrease of Tc in magnetically diluted manganites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 73, ',', 2],[82.0, 1.0, 'These', 1]

W
###Effects of dilution on magnetic and transport properties of La0.7Ca0.3Mn1-xM'xO3|D. N. H. Nam,H. S. Hong,N. V. Khien,N. V. Dai,T. D. Thanh,L. T. C. Tuong,L. V. Hong,N. X. Phuc###
(944629, 944629)
 Additionally, structural data of the Al-substituted samplessuggest that variations of the eg-electron bandwidth W cannot explain thedecrease of Tc in magnetically diluted manganites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 73, ',', 2],[105.0, 1.0, 'These', 1]

Tc
###Effects of dilution on magnetic and transport properties of La0.7Ca0.3Mn1-xM'xO3|D. N. H. Nam,H. S. Hong,N. V. Khien,N. V. Dai,T. D. Thanh,L. T. C. Tuong,L. V. Hong,N. X. Phuc###
(944642, 944642)
 Additionally, structural data of the Al-substituted samplessuggest that variations of the eg-electron bandwidth W cannot explain thedecrease of Tc in magnetically diluted manganites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[170.0, 73, ',', 2],[118.0, 1.0, 'These', 1]

Fe
###Single-band tight-binding parameters for Fe-MgO-Fe magnetic heterostructures|Tehseen Z. Raza,Hassan Raza###
(944673, 944673)
Single-band tight-binding parameters for Fe-MgO-Fe magnetic heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Single-band tight-binding parameters for Fe-MgO-Fe magnetic heterostructures|Tehseen Z. Raza,Hassan Raza###
(944675, 944676)
Single-band tight-binding parameters for Fe-MgO-Fe magnetic heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Single-band tight-binding parameters for Fe-MgO-Fe magnetic heterostructures|Tehseen Z. Raza,Hassan Raza###
(944678, 944678)
Single-band tight-binding parameters for Fe-MgO-Fe magnetic heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SB
###Single-band tight-binding parameters for Fe-MgO-Fe magnetic heterostructures|Tehseen Z. Raza,Hassan Raza###
(944709, 944710)
 We present a computationally efficient transferable single-band tight-bindingmodel (SBT<missing VAR>B) for spin polarized transport in heterostructures with an effort tocapture the band structure effects.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Single-band tight-binding parameters for Fe-MgO-Fe magnetic heterostructures|Tehseen Z. Raza,Hassan Raza###
(944712, 944712)
 We present a computationally efficient transferable single-band tight-bindingmodel (SBT<missing VAR>B) for spin polarized transport in heterostructures with an effort tocapture the band structure effects.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Single-band tight-binding parameters for Fe-MgO-Fe magnetic heterostructures|Tehseen Z. Raza,Hassan Raza###
(944747, 944747)
 As an example, we apply it to studytransport through Fe-MgO-Fe(100) magnetic tunnel junction devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Single-band tight-binding parameters for Fe-MgO-Fe magnetic heterostructures|Tehseen Z. Raza,Hassan Raza###
(944769, 944769)
 As an example, we apply it to studytransport through Fe-MgO-Fe(100) magnetic tunnel junction devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Single-band tight-binding parameters for Fe-MgO-Fe magnetic heterostructures|Tehseen Z. Raza,Hassan Raza###
(944771, 944772)
 As an example, we apply it to studytransport through Fe-MgO-Fe(100) magnetic tunnel junction devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SB
###Single-band tight-binding parameters for Fe-MgO-Fe magnetic heterostructures|Tehseen Z. Raza,Hassan Raza###
(944868, 944869)
The SBT<missing VAR>B parameters for each of the four symmetry bands for bcc Fe(100) arefirst proposed which are complemented with the transferable tight-bindingparameters for the MgO tunnel barrier for the Delta1 and Delta5 bands.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Single-band tight-binding parameters for Fe-MgO-Fe magnetic heterostructures|Tehseen Z. Raza,Hassan Raza###
(944871, 944871)
The SBT<missing VAR>B parameters for each of the four symmetry bands for bcc Fe(100) arefirst proposed which are complemented with the transferable tight-bindingparameters for the MgO tunnel barrier for the Delta1 and Delta5 bands.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Single-band tight-binding parameters for Fe-MgO-Fe magnetic heterostructures|Tehseen Z. Raza,Hassan Raza###
(944928, 944929)
The SBT<missing VAR>B parameters for each of the four symmetry bands for bcc Fe(100) arefirst proposed which are complemented with the transferable tight-bindingparameters for the MgO tunnel barrier for the Delta1 and Delta5 bands.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Single-band tight-binding parameters for Fe-MgO-Fe magnetic heterostructures|Tehseen Z. Raza,Hassan Raza###
(944984, 944984)
 Features like I-V characteristics, voltage dependence and thebarrier width dependence of the tunnel magnetoresistance ratio are capturedquantitatively and the trends match well with the ones observed by ab initiomethods.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Single-band tight-binding parameters for Fe-MgO-Fe magnetic heterostructures|Tehseen Z. Raza,Hassan Raza###
(944986, 944986)
 Features like I-V characteristics, voltage dependence and thebarrier width dependence of the tunnel magnetoresistance ratio are capturedquantitatively and the trends match well with the ones observed by ab initiomethods.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Hf
###Enhancement of Jc by Hf -Doping in the Superconductor MgB2: A Hyperfine Interaction Study|A. Talapatra,S. K. Das,S. K. Bandyopadhyay,P. Barat,Pintu Sen,R. Rawat,A. Banerjee,T. Butz###
(945067, 945067)
Enhancement of Jc by Hf -Doping in the Superconductor MgB2 A Hyperfine Interaction Study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgB2
###Enhancement of Jc by Hf -Doping in the Superconductor MgB2: A Hyperfine Interaction Study|A. Talapatra,S. K. Das,S. K. Bandyopadhyay,P. Barat,Pintu Sen,R. Rawat,A. Banerjee,T. Butz###
(945078, 945080)
Enhancement of Jc by Hf -Doping in the Superconductor MgB2 A Hyperfine Interaction Study.
Featurization terminated normally.
0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgB2
###Enhancement of Jc by Hf -Doping in the Superconductor MgB2: A Hyperfine Interaction Study|A. Talapatra,S. K. Das,S. K. Bandyopadhyay,P. Barat,Pintu Sen,R. Rawat,A. Banerjee,T. Butz###
(945144, 945146)
 Measurements of the critical current density (Jc) by magnetization and theupper critical field (Hc2) by magnetoresistance have been performed forhafnium-doped MgB2.
Featurization terminated normally.
0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###Enhancement of Jc by Hf -Doping in the Superconductor MgB2: A Hyperfine Interaction Study|A. Talapatra,S. K. Das,S. K. Bandyopadhyay,P. Barat,Pintu Sen,R. Rawat,A. Banerjee,T. Butz###
(945190, 945190)
 There has been a remarkable enhancement of Jc as comparedto that by ion irradiation without any appreciable decrease in Tc, which isbeneficial from the point of view of applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Enhancement of Jc by Hf -Doping in the Superconductor MgB2: A Hyperfine Interaction Study|A. Talapatra,S. K. Das,S. K. Bandyopadhyay,P. Barat,Pintu Sen,R. Rawat,A. Banerjee,T. Butz###
(945237, 945237)
 In addition, there has been anincrease in the upper critical field which indicates that Hf partiallysubstitutes for Mg.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Hf
###Enhancement of Jc by Hf -Doping in the Superconductor MgB2: A Hyperfine Interaction Study|A. Talapatra,S. K. Das,S. K. Bandyopadhyay,P. Barat,Pintu Sen,R. Rawat,A. Banerjee,T. Butz###
(945269, 945269)
 In addition, there has been anincrease in the upper critical field which indicates that Hf partiallysubstitutes for Mg.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mg
###Enhancement of Jc by Hf -Doping in the Superconductor MgB2: A Hyperfine Interaction Study|A. Talapatra,S. K. Das,S. K. Bandyopadhyay,P. Barat,Pintu Sen,R. Rawat,A. Banerjee,T. Butz###
(945278, 945278)
 In addition, there has been anincrease in the upper critical field which indicates that Hf partiallysubstitutes for Mg.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Enhancement of Jc by Hf -Doping in the Superconductor MgB2: A Hyperfine Interaction Study|A. Talapatra,S. K. Das,S. K. Bandyopadhyay,P. Barat,Pintu Sen,R. Rawat,A. Banerjee,T. Butz###
(945305, 945305)
 Hyperfine interaction parameters obtained from timedifferential perturbed angular correlation (TDPAC) measurements revealed theformation of HfB and HfB2 phases along with the substitution of Hf.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Enhancement of Jc by Hf -Doping in the Superconductor MgB2: A Hyperfine Interaction Study|A. Talapatra,S. K. Das,S. K. Bandyopadhyay,P. Barat,Pintu Sen,R. Rawat,A. Banerjee,T. Butz###
(945307, 945307)
 Hyperfine interaction parameters obtained from timedifferential perturbed angular correlation (TDPAC) measurements revealed theformation of HfB and HfB2 phases along with the substitution of Hf.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HfB
###Enhancement of Jc by Hf -Doping in the Superconductor MgB2: A Hyperfine Interaction Study|A. Talapatra,S. K. Das,S. K. Bandyopadhyay,P. Barat,Pintu Sen,R. Rawat,A. Banerjee,T. Butz###
(945321, 945322)
 Hyperfine interaction parameters obtained from timedifferential perturbed angular correlation (TDPAC) measurements revealed theformation of HfB and HfB2 phases along with the substitution of Hf.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HfB2
###Enhancement of Jc by Hf -Doping in the Superconductor MgB2: A Hyperfine Interaction Study|A. Talapatra,S. K. Das,S. K. Bandyopadhyay,P. Barat,Pintu Sen,R. Rawat,A. Banerjee,T. Butz###
(945326, 945328)
 Hyperfine interaction parameters obtained from timedifferential perturbed angular correlation (TDPAC) measurements revealed theformation of HfB and HfB2 phases along with the substitution of Hf.
Featurization terminated normally.
0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Hf
###Enhancement of Jc by Hf -Doping in the Superconductor MgB2: A Hyperfine Interaction Study|A. Talapatra,S. K. Das,S. K. Bandyopadhyay,P. Barat,Pintu Sen,R. Rawat,A. Banerjee,T. Butz###
(945342, 945342)
 Hyperfine interaction parameters obtained from timedifferential perturbed angular correlation (TDPAC) measurements revealed theformation of HfB and HfB2 phases along with the substitution of Hf.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgB2
###Enhancement of Jc by Hf -Doping in the Superconductor MgB2: A Hyperfine Interaction Study|A. Talapatra,S. K. Das,S. K. Bandyopadhyay,P. Barat,Pintu Sen,R. Rawat,A. Banerjee,T. Butz###
(945381, 945383)
 A possibleexplanation is given for the role of these species in the enhancement of Jc inMgB2 superconductor.
Featurization terminated normally.
0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YbC6
###Anisotropic superconductivity in graphite intercalation compound YbC6|N. F. Kawai,Hiroshi Fukuyama###
(945408, 945410)
Anisotropic superconductivity in graphite intercalation compound YbC6.
Featurization terminated normally.
0,0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 6.5, 'K', 1]

YbC6
###Anisotropic superconductivity in graphite intercalation compound YbC6|N. F. Kawai,Hiroshi Fukuyama###
(945445, 945447)
 We report anisotropy of the upper critical field (Bc2) of an intercalatedgraphite superconductor YbC6 (Tc  6.5 K) determined from angular dependentmagnetoresistance measurements.
Featurization terminated normally.
0,0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 6.5, 'K', 0]

Tc
###Anisotropic superconductivity in graphite intercalation compound YbC6|N. F. Kawai,Hiroshi Fukuyama###
(945450, 945450)
 We report anisotropy of the upper critical field (Bc2) of an intercalatedgraphite superconductor YbC6 (Tc  6.5 K) determined from angular dependentmagnetoresistance measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 6.5, 'K', 0]

CaC6
###Anisotropic superconductivity in graphite intercalation compound YbC6|N. F. Kawai,Hiroshi Fukuyama###
(945602, 945604)
 This observation is similar to the measurements forthe other intercalated graphite superconductor, CaC6, by Jobiliong et al.
Featurization terminated normally.
0,0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 6.5, 'K', 2]

H
###Anisotropic superconductivity in graphite intercalation compound YbC6|N. F. Kawai,Hiroshi Fukuyama###
(945624, 945624)
Jobiliong, H.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[172.0, 6.5, 'K', 4]

Y
###Anisotropic superconductivity in graphite intercalation compound YbC6|N. F. Kawai,Hiroshi Fukuyama###
(945640, 945640)
 Janik, Y.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 6.5, 'K', 8]

S
###Anisotropic superconductivity in graphite intercalation compound YbC6|N. F. Kawai,Hiroshi Fukuyama###
(945657, 945657)
S.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, 6.5, 'K', 12]

C
###Anisotropic superconductivity in graphite intercalation compound YbC6|N. F. Kawai,Hiroshi Fukuyama###
(945663, 945663)
 Brooks, C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[211.0, 6.5, 'K', 13]

B
###Anisotropic superconductivity in graphite intercalation compound YbC6|N. F. Kawai,Hiroshi Fukuyama###
(945678, 945678)
 B 76 (2007) 31 052511].
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[226.0, 6.5, 'K', 17]

YbC6
###Anisotropic superconductivity in graphite intercalation compound YbC6|N. F. Kawai,Hiroshi Fukuyama###
(945719, 945721)
 A possible explanation for theunexpected applicability of these models is that our YbC6 samples aresynthesized as thin flakes in the host graphite.
Featurization terminated normally.
0,0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[267.0, 6.5, 'K', 18]

I
###Resonant electronic states and I-V curves of Fe/MgO/Fe(100) tunnel junctions|Ivan Rungger,Oleg N. Mryasov,Stefano Sanvito###
(945761, 945761)
Resonant electronic states and I-V curves of Fe/MgO/Fe(100) tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 20, 'mVolt', 2]

V
###Resonant electronic states and I-V curves of Fe/MgO/Fe(100) tunnel junctions|Ivan Rungger,Oleg N. Mryasov,Stefano Sanvito###
(945763, 945763)
Resonant electronic states and I-V curves of Fe/MgO/Fe(100) tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 20, 'mVolt', 2]

Fe/MgO
###Resonant electronic states and I-V curves of Fe/MgO/Fe(100) tunnel junctions|Ivan Rungger,Oleg N. Mryasov,Stefano Sanvito###
(945769, 945772)
Resonant electronic states and I-V curves of Fe/MgO/Fe(100) tunnel junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[99.0, 20, 'mVolt', 2]

Fe/MgO/Fe
###Resonant electronic states and I-V curves of Fe/MgO/Fe(100) tunnel junctions|Ivan Rungger,Oleg N. Mryasov,Stefano Sanvito###
(945806, 945811)
 The bias dependence of the tunnel magnetoresistance (TMR) of Fe/MgO/Fe tunneljunctions is investigated theoretically with a fully self-consistent schemethat combines the non-equilibrium Greens<missing VAR> functions method with densityfunctional theory.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[60.0, 20, 'mVolt', 1]

At
###Resonant electronic states and I-V curves of Fe/MgO/Fe(100) tunnel junctions|Ivan Rungger,Oleg N. Mryasov,Stefano Sanvito###
(945864, 945864)
 At voltages smaller than 20 mVolt the I-V characteristicsand the TMR are dominated by resonant transport through narrow interface statesin the minority spin-band.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 20, 'mVolt', 0]

I
###Resonant electronic states and I-V curves of Fe/MgO/Fe(100) tunnel junctions|Ivan Rungger,Oleg N. Mryasov,Stefano Sanvito###
(945875, 945875)
 At voltages smaller than 20 mVolt the I-V characteristicsand the TMR are dominated by resonant transport through narrow interface statesin the minority spin-band.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 20, 'mVolt', 0]

V
###Resonant electronic states and I-V curves of Fe/MgO/Fe(100) tunnel junctions|Ivan Rungger,Oleg N. Mryasov,Stefano Sanvito###
(945877, 945877)
 At voltages smaller than 20 mVolt the I-V characteristicsand the TMR are dominated by resonant transport through narrow interface statesin the minority spin-band.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 20, 'mVolt', 0]

In
###Resonant electronic states and I-V curves of Fe/MgO/Fe(100) tunnel junctions|Ivan Rungger,Oleg N. Mryasov,Stefano Sanvito###
(945920, 945920)
 In the parallel configuration this contribution isquenched by a voltage comparable to the energy width of the interface state,whereas it persists at all voltages in the anti-parallel configuration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 20, 'mVolt', 1]

At
###Resonant electronic states and I-V curves of Fe/MgO/Fe(100) tunnel junctions|Ivan Rungger,Oleg N. Mryasov,Stefano Sanvito###
(945986, 945986)
 Athigher bias the transport is mainly determined by the relative positions of theDelta1 band-edges in the two Fe electrodes, which causes a decrease of theTMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 20, 'mVolt', 2]

Fe
###Resonant electronic states and I-V curves of Fe/MgO/Fe(100) tunnel junctions|Ivan Rungger,Oleg N. Mryasov,Stefano Sanvito###
(946029, 946029)
 Athigher bias the transport is mainly determined by the relative positions of theDelta1 band-edges in the two Fe electrodes, which causes a decrease of theTMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 20, 'mVolt', 2]

Eu1-xLa
###Magnetic phase diagram in Eu$_{1-x}$La$_x$Fe$_2$As$_2$ single crystals|T. Wu,G. Wu,H. Chen,Y. L. Xie,R. H. Liu,X. F. Wang,X. H. Chen###
(946068, 946072)
Magnetic phase diagram in Eu1-xLax<missing VAR>Fe2As2 single crystals.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[205.0, 0.15, 'crystals', 5]

Fe2As2
###Magnetic phase diagram in Eu$_{1-x}$La$_x$Fe$_2$As$_2$ single crystals|T. Wu,G. Wu,H. Chen,Y. L. Xie,R. H. Liu,X. F. Wang,X. H. Chen###
(946074, 946077)
Magnetic phase diagram in Eu1-xLax<missing VAR>Fe2As2 single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[200.0, 0.15, 'crystals', 5]

(H)
###Magnetic phase diagram in Eu$_{1-x}$La$_x$Fe$_2$As$_2$ single crystals|T. Wu,G. Wu,H. Chen,Y. L. Xie,R. H. Liu,X. F. Wang,X. H. Chen###
(946112, 946114)
 We have systematically measured resistivity, susceptibility and specific heatunder different magnetic fields (H) in Eu1-xLax<missing VAR>Fe2As2 singlecrystals.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 0.15, 'crystals', 4]

Eu1-xLa
###Magnetic phase diagram in Eu$_{1-x}$La$_x$Fe$_2$As$_2$ single crystals|T. Wu,G. Wu,H. Chen,Y. L. Xie,R. H. Liu,X. F. Wang,X. H. Chen###
(946118, 946122)
 We have systematically measured resistivity, susceptibility and specific heatunder different magnetic fields (H) in Eu1-xLax<missing VAR>Fe2As2 singlecrystals.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[155.0, 0.15, 'crystals', 4]

Fe2As2
###Magnetic phase diagram in Eu$_{1-x}$La$_x$Fe$_2$As$_2$ single crystals|T. Wu,G. Wu,H. Chen,Y. L. Xie,R. H. Liu,X. F. Wang,X. H. Chen###
(946124, 946127)
 We have systematically measured resistivity, susceptibility and specific heatunder different magnetic fields (H) in Eu1-xLax<missing VAR>Fe2As2 singlecrystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 0.15, 'crystals', 4]

Eu2
###Magnetic phase diagram in Eu$_{1-x}$La$_x$Fe$_2$As$_2$ single crystals|T. Wu,G. Wu,H. Chen,Y. L. Xie,R. H. Liu,X. F. Wang,X. H. Chen###
(946181, 946182)
 It is found that a metamagnetic transition from A-typeantiferromagnetism to ferromagnetism occurs at a critical field for magneticsublattice of Eu2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 0.15, 'crystals', 3]

H
###Magnetic phase diagram in Eu$_{1-x}$La$_x$Fe$_2$As$_2$ single crystals|T. Wu,G. Wu,H. Chen,Y. L. Xie,R. H. Liu,X. F. Wang,X. H. Chen###
(946214, 946214)
 The jump of specific heat is suppressed and shifts tolow temperature with increasing H up to the critical value, then shifts to hightemperature with further increasing H.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 0.15, 'crystals', 2]

H
###Magnetic phase diagram in Eu$_{1-x}$La$_x$Fe$_2$As$_2$ single crystals|T. Wu,G. Wu,H. Chen,Y. L. Xie,R. H. Liu,X. F. Wang,X. H. Chen###
(946244, 946244)
 The jump of specific heat is suppressed and shifts tolow temperature with increasing H up to the critical value, then shifts to hightemperature with further increasing H.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 0.15, 'crystals', 2]

H
###Magnetic phase diagram in Eu$_{1-x}$La$_x$Fe$_2$As$_2$ single crystals|T. Wu,G. Wu,H. Chen,Y. L. Xie,R. H. Liu,X. F. Wang,X. H. Chen###
(946263, 946263)
 Detailed H-T<missing VAR> phase diagrams for x<missing VAR>0 and 0.15 crystals are given,and possible magnetic structure is proposed.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 0.15, 'crystals', 0]

Eu2
###Magnetic phase diagram in Eu$_{1-x}$La$_x$Fe$_2$As$_2$ single crystals|T. Wu,G. Wu,H. Chen,Y. L. Xie,R. H. Liu,X. F. Wang,X. H. Chen###
(946325, 946326)
 Magnetoresistance measurementsindicate that there exists a strong coupling between local moment of Eu2and charge in Fe-As layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 0.15, 'crystals', 1]

Fe
###Magnetic phase diagram in Eu$_{1-x}$La$_x$Fe$_2$As$_2$ single crystals|T. Wu,G. Wu,H. Chen,Y. L. Xie,R. H. Liu,X. F. Wang,X. H. Chen###
(946335, 946335)
 Magnetoresistance measurementsindicate that there exists a strong coupling between local moment of Eu2and charge in Fe-As layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 0.15, 'crystals', 1]

As
###Magnetic phase diagram in Eu$_{1-x}$La$_x$Fe$_2$As$_2$ single crystals|T. Wu,G. Wu,H. Chen,Y. L. Xie,R. H. Liu,X. F. Wang,X. H. Chen###
(946337, 946337)
 Magnetoresistance measurementsindicate that there exists a strong coupling between local moment of Eu2and charge in Fe-As layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 0.15, 'crystals', 1]

FeAs
###Magnetic phase diagram in Eu$_{1-x}$La$_x$Fe$_2$As$_2$ single crystals|T. Wu,G. Wu,H. Chen,Y. L. Xie,R. H. Liu,X. F. Wang,X. H. Chen###
(946365, 946366)
 These results are very significant to understand theunderlying physics of FeAs superconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 0.15, 'crystals', 2]

Na
###Magnetic and charge transport properties of the Na-based Os oxide pyrochlore|Y. G. Shi,A. A. Belik,M. Tachibana,M. Tanaka,Y. Katsuya,K. Kobayashi,K. Yamaura,E. Takayama-Muromachi###
(946393, 946393)
Magnetic and charge transport properties of the Na-based Os oxide pyrochlore.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[245.0, 22, 'mJ', 8],[313.0, 2, 'K', 10],[316.0, 70, 'kOe', 10]

Os
###Magnetic and charge transport properties of the Na-based Os oxide pyrochlore|Y. G. Shi,A. A. Belik,M. Tachibana,M. Tanaka,Y. Katsuya,K. Kobayashi,K. Yamaura,E. Takayama-Muromachi###
(946397, 946397)
Magnetic and charge transport properties of the Na-based Os oxide pyrochlore.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[241.0, 22, 'mJ', 8],[309.0, 2, 'K', 10],[312.0, 70, 'kOe', 10]

Na
###Magnetic and charge transport properties of the Na-based Os oxide pyrochlore|Y. G. Shi,A. A. Belik,M. Tachibana,M. Tanaka,Y. Katsuya,K. Kobayashi,K. Yamaura,E. Takayama-Muromachi###
(946404, 946404)
 Na-based osmium oxide pyrochlore was synthesized for the first time by anion-exchange method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[234.0, 22, 'mJ', 7],[302.0, 2, 'K', 9],[305.0, 70, 'kOe', 9]

KOs2O6
###Magnetic and charge transport properties of the Na-based Os oxide pyrochlore|Y. G. Shi,A. A. Belik,M. Tachibana,M. Tanaka,Y. Katsuya,K. Kobayashi,K. Yamaura,E. Takayama-Muromachi###
(946438, 946442)
 KOs2O6 was used as a host compound.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[196.0, 22, 'mJ', 6],[264.0, 2, 'K', 8],[267.0, 70, 'kOe', 8]

Na1.4Os2O6
###Magnetic and charge transport properties of the Na-based Os oxide pyrochlore|Y. G. Shi,A. A. Belik,M. Tachibana,M. Tanaka,Y. Katsuya,K. Kobayashi,K. Yamaura,E. Takayama-Muromachi###
(946527, 946532)
 The composition was identified as Na1.4Os2O6.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6382978723404255,0,0,0.14893617021276595,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2127659574468085,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 22, 'mJ', 4],[174.0, 2, 'K', 6],[177.0, 70, 'kOe', 6]

H2O
###Magnetic and charge transport properties of the Na-based Os oxide pyrochlore|Y. G. Shi,A. A. Belik,M. Tachibana,M. Tanaka,Y. Katsuya,K. Kobayashi,K. Yamaura,E. Takayama-Muromachi###
(946534, 946536)
H2O.
Featurization terminated normally.
0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 22, 'mJ', 3],[170.0, 2, 'K', 5],[173.0, 70, 'kOe', 5]

Na1.4Os2O6
###Magnetic and charge transport properties of the Na-based Os oxide pyrochlore|Y. G. Shi,A. A. Belik,M. Tachibana,M. Tanaka,Y. Katsuya,K. Kobayashi,K. Yamaura,E. Takayama-Muromachi###
(946563, 946568)
 Electricalresistivity, heat capacity, and magnetization measurements of thepolycrystalline Na1.4Os2O6.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6382978723404255,0,0,0.14893617021276595,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2127659574468085,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 22, 'mJ', 2],[138.0, 2, 'K', 4],[141.0, 70, 'kOe', 4]

H2O
###Magnetic and charge transport properties of the Na-based Os oxide pyrochlore|Y. G. Shi,A. A. Belik,M. Tachibana,M. Tanaka,Y. Katsuya,K. Kobayashi,K. Yamaura,E. Takayama-Muromachi###
(946570, 946572)
H2O clarified absence of superconductivity above 2K, being in contrast to what were found for the beta-pyrochlore AOs2O6 (A  Cs,Rb, K).
Featurization terminated normally.
0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 22, 'mJ', 1],[134.0, 2, 'K', 3],[137.0, 70, 'kOe', 3]

K
###Magnetic and charge transport properties of the Na-based Os oxide pyrochlore|Y. G. Shi,A. A. Belik,M. Tachibana,M. Tanaka,Y. Katsuya,K. Kobayashi,K. Yamaura,E. Takayama-Muromachi###
(946587, 946587)
H2O clarified absence of superconductivity above 2K, being in contrast to what were found for the beta-pyrochlore AOs2O6 (A  Cs,Rb, K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 22, 'mJ', 1],[119.0, 2, 'K', 3],[122.0, 70, 'kOe', 3]

Os2O6
###Magnetic and charge transport properties of the Na-based Os oxide pyrochlore|Y. G. Shi,A. A. Belik,M. Tachibana,M. Tanaka,Y. Katsuya,K. Kobayashi,K. Yamaura,E. Takayama-Muromachi###
(946613, 946616)
H2O clarified absence of superconductivity above 2K, being in contrast to what were found for the beta-pyrochlore AOs2O6 (A  Cs,Rb, K).
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 22, 'mJ', 1],[90.0, 2, 'K', 3],[93.0, 70, 'kOe', 3]

Cs
###Magnetic and charge transport properties of the Na-based Os oxide pyrochlore|Y. G. Shi,A. A. Belik,M. Tachibana,M. Tanaka,Y. Katsuya,K. Kobayashi,K. Yamaura,E. Takayama-Muromachi###
(946622, 946622)
H2O clarified absence of superconductivity above 2K, being in contrast to what were found for the beta-pyrochlore AOs2O6 (A  Cs,Rb, K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 22, 'mJ', 1],[84.0, 2, 'K', 3],[87.0, 70, 'kOe', 3]

Rb
###Magnetic and charge transport properties of the Na-based Os oxide pyrochlore|Y. G. Shi,A. A. Belik,M. Tachibana,M. Tanaka,Y. Katsuya,K. Kobayashi,K. Yamaura,E. Takayama-Muromachi###
(946626, 946626)
H2O clarified absence of superconductivity above 2K, being in contrast to what were found for the beta-pyrochlore AOs2O6 (A  Cs,Rb, K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 22, 'mJ', 1],[80.0, 2, 'K', 3],[83.0, 70, 'kOe', 3]

K
###Magnetic and charge transport properties of the Na-based Os oxide pyrochlore|Y. G. Shi,A. A. Belik,M. Tachibana,M. Tanaka,Y. Katsuya,K. Kobayashi,K. Yamaura,E. Takayama-Muromachi###
(946629, 946629)
H2O clarified absence of superconductivity above 2K, being in contrast to what were found for the beta-pyrochlore AOs2O6 (A  Cs,Rb, K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 22, 'mJ', 1],[77.0, 2, 'K', 3],[80.0, 70, 'kOe', 3]

K
###Magnetic and charge transport properties of the Na-based Os oxide pyrochlore|Y. G. Shi,A. A. Belik,M. Tachibana,M. Tanaka,Y. Katsuya,K. Kobayashi,K. Yamaura,E. Takayama-Muromachi###
(946640, 946640)
 Sommerfeld coefficient of 22 mJ K-2 mol-1 of Na1.4Os2O6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 22, 'mJ', 0],[66.0, 2, 'K', 2],[69.0, 70, 'kOe', 2]

Na1.4Os2O6
###Magnetic and charge transport properties of the Na-based Os oxide pyrochlore|Y. G. Shi,A. A. Belik,M. Tachibana,M. Tanaka,Y. Katsuya,K. Kobayashi,K. Yamaura,E. Takayama-Muromachi###
(946650, 946655)
 Sommerfeld coefficient of 22 mJ K-2 mol-1 of Na1.4Os2O6.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6382978723404255,0,0,0.14893617021276595,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2127659574468085,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 22, 'mJ', 0],[51.0, 2, 'K', 2],[54.0, 70, 'kOe', 2]

H2O
###Magnetic and charge transport properties of the Na-based Os oxide pyrochlore|Y. G. Shi,A. A. Belik,M. Tachibana,M. Tanaka,Y. Katsuya,K. Kobayashi,K. Yamaura,E. Takayama-Muromachi###
(946657, 946659)
H2O wassmallest among those of AOs2O6.
Featurization terminated normally.
0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 22, 'mJ', 1],[47.0, 2, 'K', 1],[50.0, 70, 'kOe', 1]

Os2O6
###Magnetic and charge transport properties of the Na-based Os oxide pyrochlore|Y. G. Shi,A. A. Belik,M. Tachibana,M. Tanaka,Y. Katsuya,K. Kobayashi,K. Yamaura,E. Takayama-Muromachi###
(946673, 946676)
H2O wassmallest among those of AOs2O6.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 22, 'mJ', 1],[30.0, 2, 'K', 1],[33.0, 70, 'kOe', 1]

K
###Magnetic and charge transport properties of the Na-based Os oxide pyrochlore|Y. G. Shi,A. A. Belik,M. Tachibana,M. Tanaka,Y. Katsuya,K. Kobayashi,K. Yamaura,E. Takayama-Muromachi###
(946689, 946689)
 A magnetic anomaly at 57 K and possibleassociated magnetoresistance (3.7 % at 2 K in 70 kOe) were found.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 22, 'mJ', 2],[17.0, 2, 'K', 0],[20.0, 70, 'kOe', 0]

CeIrIn5
###Magnetotransport in the CeIrIn${_5}$ system: The influence of antiferromagnetic fluctuations|Sunil Nair,M. Nicklas,J. L. Sarrao,J. D. Thompson,F. Steglich,S. Wirth###
(946731, 946734)
Magnetotransport in the CeIrIn5 system The influence of antiferromagnetic fluctuations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7142857142857143,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CeIrIn5
###Magnetotransport in the CeIrIn${_5}$ system: The influence of antiferromagnetic fluctuations|Sunil Nair,M. Nicklas,J. L. Sarrao,J. D. Thompson,F. Steglich,S. Wirth###
(946774, 946777)
 We present an overview of magnetotransport measurements on the heavy-fermionsuperconductor CeIrIn5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7142857142857143,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.5Sr1.5MnO4
###Bridging charge-orbital ordering and Fermi surface instabilities in half-doped single-layered manganite La_0.5Sr_1.5MnO_4|D. V. Evtushinsky,D. S. Inosov,G. Urbanik,V. B. Zabolotnyy,R. Schuster,P. Sass,T. Haenke,C. Hess,B. Buechner,R. Follath,P. Reutler,A. Revcolevschi,A. A. Kordyuk,S. V. Borisenko###
(947377, 947383)
Bridging charge-orbital ordering and Fermi surface instabilities in half-doped single-layered manganite La0.5Sr1.5MnO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0.21428571428571427,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07142857142857142,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Bridging charge-orbital ordering and Fermi surface instabilities in half-doped single-layered manganite La_0.5Sr_1.5MnO_4|D. V. Evtushinsky,D. S. Inosov,G. Urbanik,V. B. Zabolotnyy,R. Schuster,P. Sass,T. Haenke,C. Hess,B. Buechner,R. Follath,P. Reutler,A. Revcolevschi,A. A. Kordyuk,S. V. Borisenko###
(947453, 947453)
 While the pure charge densitywaves (CD<missing VAR>W) are well described by an itinerant approach, where electrons aretreated as waves propagating through the crystal, the charge-orbital ordering(COO) is usually explained by a local approach, where the electrons are treatedas localized on the atomic sites.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Bridging charge-orbital ordering and Fermi surface instabilities in half-doped single-layered manganite La_0.5Sr_1.5MnO_4|D. V. Evtushinsky,D. S. Inosov,G. Urbanik,V. B. Zabolotnyy,R. Schuster,P. Sass,T. Haenke,C. Hess,B. Buechner,R. Follath,P. Reutler,A. Revcolevschi,A. A. Kordyuk,S. V. Borisenko###
(947455, 947455)
 While the pure charge densitywaves (CD<missing VAR>W) are well described by an itinerant approach, where electrons aretreated as waves propagating through the crystal, the charge-orbital ordering(COO) is usually explained by a local approach, where the electrons are treatedas localized on the atomic sites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(COO)
###Bridging charge-orbital ordering and Fermi surface instabilities in half-doped single-layered manganite La_0.5Sr_1.5MnO_4|D. V. Evtushinsky,D. S. Inosov,G. Urbanik,V. B. Zabolotnyy,R. Schuster,P. Sass,T. Haenke,C. Hess,B. Buechner,R. Follath,P. Reutler,A. Revcolevschi,A. A. Kordyuk,S. V. Borisenko###
(947504, 947508)
 While the pure charge densitywaves (CD<missing VAR>W) are well described by an itinerant approach, where electrons aretreated as waves propagating through the crystal, the charge-orbital ordering(COO) is usually explained by a local approach, where the electrons are treatedas localized on the atomic sites.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.5Sr1.5MnO4
###Bridging charge-orbital ordering and Fermi surface instabilities in half-doped single-layered manganite La_0.5Sr_1.5MnO_4|D. V. Evtushinsky,D. S. Inosov,G. Urbanik,V. B. Zabolotnyy,R. Schuster,P. Sass,T. Haenke,C. Hess,B. Buechner,R. Follath,P. Reutler,A. Revcolevschi,A. A. Kordyuk,S. V. Borisenko###
(947568, 947574)
 Here we show that in the half-doped manganiteLa0.5Sr1.5MnO4 (LSMO) the electronic susceptibility, calculated from theangle-resolved photoemission spectra (ARPES), exhibits a prominentnesting-driven peak at one quarter of the Brillouin zone diagonal, that isequal to the reciprocal lattice vector of the charge-orbital pattern.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0.21428571428571427,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07142857142857142,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Bridging charge-orbital ordering and Fermi surface instabilities in half-doped single-layered manganite La_0.5Sr_1.5MnO_4|D. V. Evtushinsky,D. S. Inosov,G. Urbanik,V. B. Zabolotnyy,R. Schuster,P. Sass,T. Haenke,C. Hess,B. Buechner,R. Follath,P. Reutler,A. Revcolevschi,A. A. Kordyuk,S. V. Borisenko###
(947580, 947580)
 Here we show that in the half-doped manganiteLa0.5Sr1.5MnO4 (LSMO) the electronic susceptibility, calculated from theangle-resolved photoemission spectra (ARPES), exhibits a prominentnesting-driven peak at one quarter of the Brillouin zone diagonal, that isequal to the reciprocal lattice vector of the charge-orbital pattern.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Bridging charge-orbital ordering and Fermi surface instabilities in half-doped single-layered manganite La_0.5Sr_1.5MnO_4|D. V. Evtushinsky,D. S. Inosov,G. Urbanik,V. B. Zabolotnyy,R. Schuster,P. Sass,T. Haenke,C. Hess,B. Buechner,R. Follath,P. Reutler,A. Revcolevschi,A. A. Kordyuk,S. V. Borisenko###
(947610, 947610)
 Here we show that in the half-doped manganiteLa0.5Sr1.5MnO4 (LSMO) the electronic susceptibility, calculated from theangle-resolved photoemission spectra (ARPES), exhibits a prominentnesting-driven peak at one quarter of the Brillouin zone diagonal, that isequal to the reciprocal lattice vector of the charge-orbital pattern.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

COO
###Bridging charge-orbital ordering and Fermi surface instabilities in half-doped single-layered manganite La_0.5Sr_1.5MnO_4|D. V. Evtushinsky,D. S. Inosov,G. Urbanik,V. B. Zabolotnyy,R. Schuster,P. Sass,T. Haenke,C. Hess,B. Buechner,R. Follath,P. Reutler,A. Revcolevschi,A. A. Kordyuk,S. V. Borisenko###
(947708, 947710)
 Ourresults demonstrate that the Fermi surface geometry determines the propensityof the system to form a COO state which, in turn, implies the applicability ofthe itinerant approach also to the COO.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

COO
###Bridging charge-orbital ordering and Fermi surface instabilities in half-doped single-layered manganite La_0.5Sr_1.5MnO_4|D. V. Evtushinsky,D. S. Inosov,G. Urbanik,V. B. Zabolotnyy,R. Schuster,P. Sass,T. Haenke,C. Hess,B. Buechner,R. Follath,P. Reutler,A. Revcolevschi,A. A. Kordyuk,S. V. Borisenko###
(947743, 947745)
 Ourresults demonstrate that the Fermi surface geometry determines the propensityof the system to form a COO state which, in turn, implies the applicability ofthe itinerant approach also to the COO.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Localized Spins on Graphene|P. S. Cornaglia,Gonzalo Usaj,C. A. Balseiro###
(947854, 947854)
 In the presence of a small magneticfield, the low energy electronic features of graphene make possible to injectspin polarized currents through the impurity using a scanning tunnelingmicroscope (STM).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Localized Spins on Graphene|P. S. Cornaglia,Gonzalo Usaj,C. A. Balseiro###
(947919, 947919)
 In the presence of a small magneticfield, the low energy electronic features of graphene make possible to injectspin polarized currents through the impurity using a scanning tunnelingmicroscope (STM).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Localized Spins on Graphene|P. S. Cornaglia,Gonzalo Usaj,C. A. Balseiro###
(947979, 947979)
 In gated graphene the impurityspin is Kondo screened at low temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TiN
###Hyperactivated resistance in TiN films on the insulating side of the disorder-driven superconductor-insulator transition|T. I. Baturina,A. Yu. Mironov,V. M. Vinokur,M. R. Baklanov,C. Strunk###
(948052, 948053)
Hyperactivated resistance in TiN films on the insulating side of the disorder-driven superconductor-insulator transition.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 2, 'T', 3]

In
###Hyperactivated resistance in TiN films on the insulating side of the disorder-driven superconductor-insulator transition|T. I. Baturina,A. Yu. Mironov,V. M. Vinokur,M. R. Baklanov,C. Strunk###
(948128, 948128)
 Inzero magnetic field the temperature dependence of the resistance reveals asequence of distinct regimes upon decreasing temperature crossing over fromlogarithmic to activated behavior with the variable-range hopping squeezing inbetween.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 2, 'T', 1]

In
###Hyperactivated resistance in TiN films on the insulating side of the disorder-driven superconductor-insulator transition|T. I. Baturina,A. Yu. Mironov,V. M. Vinokur,M. R. Baklanov,C. Strunk###
(948201, 948201)
 In perpendicular magnetic fields below 2 T, the thermally activatedregime retains at intermediate temperatures, whereas at ultralow temperatures,the resistance increases faster than that of the thermally activated type.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 2, 'T', 0]

MgB2
###Systematic characterization of upper critical fields for MgB$_2$ thin films using the two-band superconducting theory|S. Noguchi,A. Kuribayashi,T. Ishida,T. Oba,H. Iriuda,M. Yoshizawa,Y. Harada,S. Miki,H. Shimakage,Z. Wang,K. Satoh,T. Yotsuya###
(948365, 948367)
Systematic characterization of upper critical fields for MgB2 thin films using the two-band superconducting theory.
Featurization terminated normally.
0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 1, ',', 2]

H
###Systematic characterization of upper critical fields for MgB$_2$ thin films using the two-band superconducting theory|S. Noguchi,A. Kuribayashi,T. Ishida,T. Oba,H. Iriuda,M. Yoshizawa,Y. Harada,S. Miki,H. Shimakage,Z. Wang,K. Satoh,T. Yotsuya###
(948404, 948404)
 We present experimental results of the upper critical fields Hrm c<missing VAR>2 ofvarious MgB2 thin films prepared by the molecular beam epitaxy,multiple-targets sputtering, and co-evaporation deposition apparatus.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 1, ',', 1]

MgB2
###Systematic characterization of upper critical fields for MgB$_2$ thin films using the two-band superconducting theory|S. Noguchi,A. Kuribayashi,T. Ishida,T. Oba,H. Iriuda,M. Yoshizawa,Y. Harada,S. Miki,H. Shimakage,Z. Wang,K. Satoh,T. Yotsuya###
(948415, 948417)
 We present experimental results of the upper critical fields Hrm c<missing VAR>2 ofvarious MgB2 thin films prepared by the molecular beam epitaxy,multiple-targets sputtering, and co-evaporation deposition apparatus.
Featurization terminated normally.
0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 1, ',', 1]

H
###Systematic characterization of upper critical fields for MgB$_2$ thin films using the two-band superconducting theory|S. Noguchi,A. Kuribayashi,T. Ishida,T. Oba,H. Iriuda,M. Yoshizawa,Y. Harada,S. Miki,H. Shimakage,Z. Wang,K. Satoh,T. Yotsuya###
(948464, 948464)
Experimental data of the Hrm c<missing VAR>2(T) are successfully analyzed by applyingthe Gurevich theory of dirty two-band superconductivity in the case ofD<missing VAR>pi/D<missing VAR>sigma>1, where D<missing VAR>pi and D<missing VAR>sigma are the intrabandelectron diffusivities for pi and sigma bands, respectively.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 1, ',', 0]

Si
###The Observation of Percolation-Induced 2D Metal-Insulator Transition in a Si MOSFET|L. A. Tracy,E. H. Hwang,K. Eng,G. A. Ten Eyck,E. P. Nordberg,K. Childs,M. S. Carroll,M. P. Lilly,S. Das Sarma###
(948669, 948669)
The Observation of Percolation-Induced 2D Metal-Insulator Transition in a Si M<missing VAR>OSFET.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 2, 'D', 0],[46.0, 2, 'D', 1],[76.0, 10, 'K', 1],[126.0, 2, 'D', 1]

OSF
###The Observation of Percolation-Induced 2D Metal-Insulator Transition in a Si MOSFET|L. A. Tracy,E. H. Hwang,K. Eng,G. A. Ten Eyck,E. P. Nordberg,K. Childs,M. S. Carroll,M. P. Lilly,S. Das Sarma###
(948672, 948674)
The Observation of Percolation-Induced 2D Metal-Insulator Transition in a Si M<missing VAR>OSFET.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 2, 'D', 0],[41.0, 2, 'D', 1],[71.0, 10, 'K', 1],[121.0, 2, 'D', 1]

Si
###The Observation of Percolation-Induced 2D Metal-Insulator Transition in a Si MOSFET|L. A. Tracy,E. H. Hwang,K. Eng,G. A. Ten Eyck,E. P. Nordberg,K. Childs,M. S. Carroll,M. P. Lilly,S. Das Sarma###
(948775, 948775)
 By analyzing the temperature (T) and density (n) dependence of themeasured conductivity (sigma) of 2D electrons in the low density(sim1011cm-2) and temperature (0.02 - 10 K) regime of high-mobility(1.0 and 1.5 times 104 cm2/Vs) Si M<missing VAR>OSFE<missing VAR>Ts, we establish that theputative 2D metal-insulator transition is a density-inhomogeneity drivenpercolation transition where the density-dependent conductivity vanishes assigma (n) propto (n<missing VAR> - np)p<missing VAR>, with the exponent p<missing VAR> sim 1.2 beingconsistent with a percolation transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 2, 'D', 1],[60.0, 2, 'D', 0],[30.0, 10, 'K', 0],[20.0, 2, 'D', 0]

OSF
###The Observation of Percolation-Induced 2D Metal-Insulator Transition in a Si MOSFET|L. A. Tracy,E. H. Hwang,K. Eng,G. A. Ten Eyck,E. P. Nordberg,K. Childs,M. S. Carroll,M. P. Lilly,S. Das Sarma###
(948778, 948780)
 By analyzing the temperature (T) and density (n) dependence of themeasured conductivity (sigma) of 2D electrons in the low density(sim1011cm-2) and temperature (0.02 - 10 K) regime of high-mobility(1.0 and 1.5 times 104 cm2/Vs) Si M<missing VAR>OSFE<missing VAR>Ts, we establish that theputative 2D metal-insulator transition is a density-inhomogeneity drivenpercolation transition where the density-dependent conductivity vanishes assigma (n) propto (n<missing VAR> - np)p<missing VAR>, with the exponent p<missing VAR> sim 1.2 beingconsistent with a percolation transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 2, 'D', 1],[63.0, 2, 'D', 0],[33.0, 10, 'K', 0],[15.0, 2, 'D', 0]

As
###Structural relaxation effects on interface and transport properties of Fe/MgO(001) tunnel junctions|Xiaobing Feng,O. Bengone,M. Alouani,S. Lebégue,I. Rungger,S. Sanvito###
(949152, 949152)
 As a consequence, the electronic transport is found to beextremely sensitive to the interface structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Structural relaxation effects on interface and transport properties of Fe/MgO(001) tunnel junctions|Xiaobing Feng,O. Bengone,M. Alouani,S. Lebégue,I. Rungger,S. Sanvito###
(949187, 949187)
 In particular, the conductancefor the LSDA-relaxed geometry is about one order of magnitude smaller than thatof the GGA-relaxed one.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni81Fe19
###Anomalous Hall voltage rectification and quantized spin-wave excitation induced by the simultaneous dc- and rf-current application in Ni81Fe19 wire|A. Yamaguchi,K. Motoi,A. Hirohata,H. Miyajima###
(949342, 949345)
Anomalous Hall voltage rectification and quantized spin-wave excitation induced by the simultaneous dc- and rf-current application in Ni81Fe19 wire.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.19,0,0.81,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Anomalous Hall voltage rectification and quantized spin-wave excitation induced by the simultaneous dc- and rf-current application in Ni81Fe19 wire|A. Yamaguchi,K. Motoi,A. Hirohata,H. Miyajima###
(949487, 949487)
 In this paper, we propose a phenomenological model, whichdescribes the time-dependent anisotropic magnetoresistance and time-dependentplaner Hall effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co2MnSi
###Current-perpendicular-to-plane giant magnetoresistance of a spin valve using Co2MnSi Heusler alloy electrodes|K. Kodama,T. Furubayashi,H. Sukegawa,T. M. Nakatani,K. Inomata,K. Hono###
(949636, 949639)
Current-perpendicular-to-plane giant magnetoresistance of a spin valve using Co2MnSi Heusler alloy electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[170.0, 673, 'K', 3],[237.0, 8.6, '%', 5],[242.0, 30.7, '%', 5]

Co2MnSi
###Current-perpendicular-to-plane giant magnetoresistance of a spin valve using Co2MnSi Heusler alloy electrodes|K. Kodama,T. Furubayashi,H. Sukegawa,T. M. Nakatani,K. Inomata,K. Hono###
(949677, 949680)
 We report the current-perpendicular-to-plane giant magnetoresistance of aspin valve with Co2MnSi (CM<missing VAR>S) Heusler alloy ferromagnetic electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 673, 'K', 2],[196.0, 8.6, '%', 4],[201.0, 30.7, '%', 4]

C
###Current-perpendicular-to-plane giant magnetoresistance of a spin valve using Co2MnSi Heusler alloy electrodes|K. Kodama,T. Furubayashi,H. Sukegawa,T. M. Nakatani,K. Inomata,K. Hono###
(949683, 949683)
 We report the current-perpendicular-to-plane giant magnetoresistance of aspin valve with Co2MnSi (CM<missing VAR>S) Heusler alloy ferromagnetic electrodes.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 673, 'K', 2],[193.0, 8.6, '%', 4],[198.0, 30.7, '%', 4]

S
###Current-perpendicular-to-plane giant magnetoresistance of a spin valve using Co2MnSi Heusler alloy electrodes|K. Kodama,T. Furubayashi,H. Sukegawa,T. M. Nakatani,K. Inomata,K. Hono###
(949685, 949685)
 We report the current-perpendicular-to-plane giant magnetoresistance of aspin valve with Co2MnSi (CM<missing VAR>S) Heusler alloy ferromagnetic electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 673, 'K', 2],[191.0, 8.6, '%', 4],[196.0, 30.7, '%', 4]

Cr/Ag/Cr/C
###Current-perpendicular-to-plane giant magnetoresistance of a spin valve using Co2MnSi Heusler alloy electrodes|K. Kodama,T. Furubayashi,H. Sukegawa,T. M. Nakatani,K. Inomata,K. Hono###
(949706, 949712)
 Amultilayer stack of Cr/Ag/Cr/CM<missing VAR>S/Cu/CM<missing VAR>S/Fe25Co75/Ir28Mn72/Ru was deposited on aMgO (001) single crystal substrate.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[97.0, 673, 'K', 1],[164.0, 8.6, '%', 3],[169.0, 30.7, '%', 3]

S/Cu/C
###Current-perpendicular-to-plane giant magnetoresistance of a spin valve using Co2MnSi Heusler alloy electrodes|K. Kodama,T. Furubayashi,H. Sukegawa,T. M. Nakatani,K. Inomata,K. Hono###
(949714, 949718)
 Amultilayer stack of Cr/Ag/Cr/CM<missing VAR>S/Cu/CM<missing VAR>S/Fe25Co75/Ir28Mn72/Ru was deposited on aMgO (001) single crystal substrate.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[91.0, 673, 'K', 1],[158.0, 8.6, '%', 3],[163.0, 30.7, '%', 3]

S/Fe25Co75/Ir28Mn72/Ru
###Current-perpendicular-to-plane giant magnetoresistance of a spin valve using Co2MnSi Heusler alloy electrodes|K. Kodama,T. Furubayashi,H. Sukegawa,T. M. Nakatani,K. Inomata,K. Hono###
(949720, 949732)
 Amultilayer stack of Cr/Ag/Cr/CM<missing VAR>S/Cu/CM<missing VAR>S/Fe25Co75/Ir28Mn72/Ru was deposited on aMgO (001) single crystal substrate.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[77.0, 673, 'K', 1],[144.0, 8.6, '%', 3],[149.0, 30.7, '%', 3]

MgO
###Current-perpendicular-to-plane giant magnetoresistance of a spin valve using Co2MnSi Heusler alloy electrodes|K. Kodama,T. Furubayashi,H. Sukegawa,T. M. Nakatani,K. Inomata,K. Hono###
(949743, 949744)
 Amultilayer stack of Cr/Ag/Cr/CM<missing VAR>S/Cu/CM<missing VAR>S/Fe25Co75/Ir28Mn72/Ru was deposited on aMgO (001) single crystal substrate.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 673, 'K', 1],[132.0, 8.6, '%', 3],[137.0, 30.7, '%', 3]

C
###Current-perpendicular-to-plane giant magnetoresistance of a spin valve using Co2MnSi Heusler alloy electrodes|K. Kodama,T. Furubayashi,H. Sukegawa,T. M. Nakatani,K. Inomata,K. Hono###
(949761, 949761)
 The bottom CM<missing VAR>S layer was epitaxially grownon the Cr/Ag/Cr buffer layers and was ordered to the L<missing VAR>21 structure afterannealing at 673 K.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 673, 'K', 0],[115.0, 8.6, '%', 2],[120.0, 30.7, '%', 2]

S
###Current-perpendicular-to-plane giant magnetoresistance of a spin valve using Co2MnSi Heusler alloy electrodes|K. Kodama,T. Furubayashi,H. Sukegawa,T. M. Nakatani,K. Inomata,K. Hono###
(949763, 949763)
 The bottom CM<missing VAR>S layer was epitaxially grownon the Cr/Ag/Cr buffer layers and was ordered to the L<missing VAR>21 structure afterannealing at 673 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 673, 'K', 0],[113.0, 8.6, '%', 2],[118.0, 30.7, '%', 2]

Cr/Ag/Cr
###Current-perpendicular-to-plane giant magnetoresistance of a spin valve using Co2MnSi Heusler alloy electrodes|K. Kodama,T. Furubayashi,H. Sukegawa,T. M. Nakatani,K. Inomata,K. Hono###
(949778, 949782)
 The bottom CM<missing VAR>S layer was epitaxially grownon the Cr/Ag/Cr buffer layers and was ordered to the L<missing VAR>21 structure afterannealing at 673 K.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[27.0, 673, 'K', 0],[94.0, 8.6, '%', 2],[99.0, 30.7, '%', 2]

C
###Current-perpendicular-to-plane giant magnetoresistance of a spin valve using Co2MnSi Heusler alloy electrodes|K. Kodama,T. Furubayashi,H. Sukegawa,T. M. Nakatani,K. Inomata,K. Hono###
(949816, 949816)
 The upper CM<missing VAR>S layer was found to grow epitaxially on the Cuspacer layer despite the large lattice mismatch between Cu and CM<missing VAR>S.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 673, 'K', 1],[60.0, 8.6, '%', 1],[65.0, 30.7, '%', 1]

S
###Current-perpendicular-to-plane giant magnetoresistance of a spin valve using Co2MnSi Heusler alloy electrodes|K. Kodama,T. Furubayashi,H. Sukegawa,T. M. Nakatani,K. Inomata,K. Hono###
(949818, 949818)
 The upper CM<missing VAR>S layer was found to grow epitaxially on the Cuspacer layer despite the large lattice mismatch between Cu and CM<missing VAR>S.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 673, 'K', 1],[58.0, 8.6, '%', 1],[63.0, 30.7, '%', 1]

Cu
###Current-perpendicular-to-plane giant magnetoresistance of a spin valve using Co2MnSi Heusler alloy electrodes|K. Kodama,T. Furubayashi,H. Sukegawa,T. M. Nakatani,K. Inomata,K. Hono###
(949836, 949836)
 The upper CM<missing VAR>S layer was found to grow epitaxially on the Cuspacer layer despite the large lattice mismatch between Cu and CM<missing VAR>S.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 673, 'K', 1],[40.0, 8.6, '%', 1],[45.0, 30.7, '%', 1]

Cu
###Current-perpendicular-to-plane giant magnetoresistance of a spin valve using Co2MnSi Heusler alloy electrodes|K. Kodama,T. Furubayashi,H. Sukegawa,T. M. Nakatani,K. Inomata,K. Hono###
(949855, 949855)
 The upper CM<missing VAR>S layer was found to grow epitaxially on the Cuspacer layer despite the large lattice mismatch between Cu and CM<missing VAR>S.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 673, 'K', 1],[21.0, 8.6, '%', 1],[26.0, 30.7, '%', 1]

C
###Current-perpendicular-to-plane giant magnetoresistance of a spin valve using Co2MnSi Heusler alloy electrodes|K. Kodama,T. Furubayashi,H. Sukegawa,T. M. Nakatani,K. Inomata,K. Hono###
(949859, 949859)
 The upper CM<missing VAR>S layer was found to grow epitaxially on the Cuspacer layer despite the large lattice mismatch between Cu and CM<missing VAR>S.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 673, 'K', 1],[17.0, 8.6, '%', 1],[22.0, 30.7, '%', 1]

S
###Current-perpendicular-to-plane giant magnetoresistance of a spin valve using Co2MnSi Heusler alloy electrodes|K. Kodama,T. Furubayashi,H. Sukegawa,T. M. Nakatani,K. Inomata,K. Hono###
(949861, 949861)
 The upper CM<missing VAR>S layer was found to grow epitaxially on the Cuspacer layer despite the large lattice mismatch between Cu and CM<missing VAR>S.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 673, 'K', 1],[15.0, 8.6, '%', 1],[20.0, 30.7, '%', 1]

CPP
###Current-perpendicular-to-plane giant magnetoresistance of a spin valve using Co2MnSi Heusler alloy electrodes|K. Kodama,T. Furubayashi,H. Sukegawa,T. M. Nakatani,K. Inomata,K. Hono###
(949886, 949888)
 The highestMR ratios of 8.6% and 30.7% for CPP-GMR were recorded at room temperature and 6K, respectively.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 673, 'K', 2],[10.0, 8.6, '%', 0],[5.0, 30.7, '%', 0]

K
###Current-perpendicular-to-plane giant magnetoresistance of a spin valve using Co2MnSi Heusler alloy electrodes|K. Kodama,T. Furubayashi,H. Sukegawa,T. M. Nakatani,K. Inomata,K. Hono###
(949909, 949909)
 The highestMR ratios of 8.6% and 30.7% for CPP-GMR were recorded at room temperature and 6K, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 673, 'K', 2],[33.0, 8.6, '%', 0],[28.0, 30.7, '%', 0]

C
###Current-perpendicular-to-plane giant magnetoresistance of a spin valve using Co2MnSi Heusler alloy electrodes|K. Kodama,T. Furubayashi,H. Sukegawa,T. M. Nakatani,K. Inomata,K. Hono###
(949929, 949929)
 The high spin polarization of the epitaxial CM<missing VAR>S layers is themost likely origin of the high MR ratio.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 673, 'K', 3],[53.0, 8.6, '%', 1],[48.0, 30.7, '%', 1]

S
###Current-perpendicular-to-plane giant magnetoresistance of a spin valve using Co2MnSi Heusler alloy electrodes|K. Kodama,T. Furubayashi,H. Sukegawa,T. M. Nakatani,K. Inomata,K. Hono###
(949931, 949931)
 The high spin polarization of the epitaxial CM<missing VAR>S layers is themost likely origin of the high MR ratio.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 673, 'K', 3],[55.0, 8.6, '%', 1],[50.0, 30.7, '%', 1]

O
###Temperature Dependence of Interlayer Magnetoresistance in Anisotropic Layered Metals|Braden A. W. Brinkman,Malcolm P. Kennett###
(950035, 950035)
 Studies of interlayer transport in layered metals have generally made use ofzero temperature conductivity expressions to analyze angle-dependentmagnetoresistance oscillations (AMRO).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Temperature Dependence of Interlayer Magnetoresistance in Anisotropic Layered Metals|Braden A. W. Brinkman,Malcolm P. Kennett###
(950051, 950051)
 However, recent high temperature AMROexperiments have been performed in a regime where the inclusion of finitetemperature effects may be required for a quantitative description of theresistivity.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Temperature Dependence of Interlayer Magnetoresistance in Anisotropic Layered Metals|Braden A. W. Brinkman,Malcolm P. Kennett###
(950210, 950210)
 We also use our expressions to calculate theinterlayer resistivity appropriate to recent AMRO experiments in an overdopedcuprate which led to the conclusion that there is an anisotropic, linear intemperature contribution to the scattering rate and find that this conclusionis robust.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

InO
###Investigating superconductor-insulator transition in thin films using drag resistance:Theoretical analysis of a proposed experiment|Yue Zou,Gil Refael,Jongsoo Yoon###
(950658, 950659)
, InO, Ta) exhibits several mysterious phenomena, such as a putativemetallic phase and a huge magnetoresistance peak.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ta
###Investigating superconductor-insulator transition in thin films using drag resistance:Theoretical analysis of a proposed experiment|Yue Zou,Gil Refael,Jongsoo Yoon###
(950662, 950662)
, InO, Ta) exhibits several mysterious phenomena, such as a putativemetallic phase and a huge magnetoresistance peak.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrRuO3/BaTiO3/SrRuO3
###Magnetic tunnel junctions with ferroelectric barriers: Prediction of four resistance states from first-principles|Julian P. Velev,Chun-Gang Duan,J. D. Burton,Alexander Smogunov,Manish K. Niranjan,Erio Tosatti,S. S. Jaswal,Evgeny Y. Tsymbal###
(951166, 951179)
 Based onfirst-principles calculations we demonstrate four resistance states inSrRuO3/BaTiO3/SrRuO3 MFTJs with asymmetric interfaces.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Re
###Re-examination of half-metallic ferromagnetism for doped LaMnO3 in quasiparticle self-consistent $GW$ method|Takao Kotani,Hiori Kino###
(951312, 951312)
Re-examination of half-metallic ferromagnetism for doped LaMnO3 in quasiparticle self-consistent G<missing VAR>W method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaMnO3
###Re-examination of half-metallic ferromagnetism for doped LaMnO3 in quasiparticle self-consistent $GW$ method|Takao Kotani,Hiori Kino###
(951328, 951331)
Re-examination of half-metallic ferromagnetism for doped LaMnO3 in quasiparticle self-consistent G<missing VAR>W method.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Re-examination of half-metallic ferromagnetism for doped LaMnO3 in quasiparticle self-consistent $GW$ method|Takao Kotani,Hiori Kino###
(951342, 951342)
Re-examination of half-metallic ferromagnetism for doped LaMnO3 in quasiparticle self-consistent G<missing VAR>W method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Re-examination of half-metallic ferromagnetism for doped LaMnO3 in quasiparticle self-consistent $GW$ method|Takao Kotani,Hiori Kino###
(951360, 951360)
 We apply the quasiparicle self-consistent G<missing VAR>W (qsgw) method to a cubicvirtual-crystal alloy La1-xBax<missing VAR>MnO3 %(LBMO) as a theoreticalrepresentative for colossal magnetoresistive perovskite manganites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La1-xBa
###Re-examination of half-metallic ferromagnetism for doped LaMnO3 in quasiparticle self-consistent $GW$ method|Takao Kotani,Hiori Kino###
(951381, 951385)
 We apply the quasiparicle self-consistent G<missing VAR>W (qsgw) method to a cubicvirtual-crystal alloy La1-xBax<missing VAR>MnO3 %(LBMO) as a theoreticalrepresentative for colossal magnetoresistive perovskite manganites.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

MnO3
###Re-examination of half-metallic ferromagnetism for doped LaMnO3 in quasiparticle self-consistent $GW$ method|Takao Kotani,Hiori Kino###
(951387, 951389)
 We apply the quasiparicle self-consistent G<missing VAR>W (qsgw) method to a cubicvirtual-crystal alloy La1-xBax<missing VAR>MnO3 %(LBMO) as a theoreticalrepresentative for colossal magnetoresistive perovskite manganites.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Re-examination of half-metallic ferromagnetism for doped LaMnO3 in quasiparticle self-consistent $GW$ method|Takao Kotani,Hiori Kino###
(951396, 951396)
 We apply the quasiparicle self-consistent G<missing VAR>W (qsgw) method to a cubicvirtual-crystal alloy La1-xBax<missing VAR>MnO3 %(LBMO) as a theoreticalrepresentative for colossal magnetoresistive perovskite manganites.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Re-examination of half-metallic ferromagnetism for doped LaMnO3 in quasiparticle self-consistent $GW$ method|Takao Kotani,Hiori Kino###
(951486, 951486)
 In contrast, the energies of calculated spinwave are very low in comparison with experiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Weak Localization and Transport Gap in Graphene Antidot Lattices|J. Eroms,D. Weiss###
(951668, 951668)
 In large-period lattices, a well-defined quantumHall effect is observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 90, 'nm', 1]

V
###Weak Localization and Transport Gap in Graphene Antidot Lattices|J. Eroms,D. Weiss###
(951782, 951782)
 Lattices withnarrow constrictions between the antidots behave as networks of nanoribbons,showing a high-resistance state and a transport gap of a few m<missing VAR>V around theDirac point.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 90, 'nm', 3]

Be
###Spin-Orbit Scattering and Quantum Metallicity in Ultra-Thin Be Films|Y. M. Xiong,A. B. Karki,D. P. Young,P. W. Adams###
(951915, 951915)
Spin-Orbit Scattering and Quantum Metallicity in Ultra-Thin Be Films.
Featurization terminated normally.
0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Be
###Spin-Orbit Scattering and Quantum Metallicity in Ultra-Thin Be Films|Y. M. Xiong,A. B. Karki,D. P. Young,P. W. Adams###
(951949, 951949)
 We compare and contrast the low temperature magnetotransport properties ofultra-thin, insulating, Be films with and without spin-orbit scattering (SOS).
Featurization terminated normally.
0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(SOS)
###Spin-Orbit Scattering and Quantum Metallicity in Ultra-Thin Be Films|Y. M. Xiong,A. B. Karki,D. P. Young,P. W. Adams###
(951965, 951969)
 We compare and contrast the low temperature magnetotransport properties ofultra-thin, insulating, Be films with and without spin-orbit scattering (SOS).
Featurization successful!
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SOS
###Spin-Orbit Scattering and Quantum Metallicity in Ultra-Thin Be Films|Y. M. Xiong,A. B. Karki,D. P. Young,P. W. Adams###
(951985, 951987)
Beryllium films have very little intrinsic SOS, but by dusting them withsub-monolayer coverages of Au, one can introduce a well controlled SOS rate.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Au
###Spin-Orbit Scattering and Quantum Metallicity in Ultra-Thin Be Films|Y. M. Xiong,A. B. Karki,D. P. Young,P. W. Adams###
(952009, 952009)
Beryllium films have very little intrinsic SOS, but by dusting them withsub-monolayer coverages of Au, one can introduce a well controlled SOS rate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SOS
###Spin-Orbit Scattering and Quantum Metallicity in Ultra-Thin Be Films|Y. M. Xiong,A. B. Karki,D. P. Young,P. W. Adams###
(952024, 952026)
Beryllium films have very little intrinsic SOS, but by dusting them withsub-monolayer coverages of Au, one can introduce a well controlled SOS rate.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Be
###Spin-Orbit Scattering and Quantum Metallicity in Ultra-Thin Be Films|Y. M. Xiong,A. B. Karki,D. P. Young,P. W. Adams###
(952034, 952034)
Pure Be films with sheet resistance R<missing VAR> >RQ exhibit a low-temperature negativemagnetoresistance (MR) that saturates to the quantum resistance RQ  h/e2.
Featurization terminated normally.
0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin-Orbit Scattering and Quantum Metallicity in Ultra-Thin Be Films|Y. M. Xiong,A. B. Karki,D. P. Young,P. W. Adams###
(952127, 952127)
 In contrast, the corresponding negative MR in Be/Au films isgreatly diminished, suggesting that, in the presence of strong SOS, the quantummetal phase can only be reached at field scales well beyond those typicallyavailable in a low temperature laboratory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Be/Au
###Spin-Orbit Scattering and Quantum Metallicity in Ultra-Thin Be Films|Y. M. Xiong,A. B. Karki,D. P. Young,P. W. Adams###
(952143, 952145)
 In contrast, the corresponding negative MR in Be/Au films isgreatly diminished, suggesting that, in the presence of strong SOS, the quantummetal phase can only be reached at field scales well beyond those typicallyavailable in a low temperature laboratory.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

SOS
###Spin-Orbit Scattering and Quantum Metallicity in Ultra-Thin Be Films|Y. M. Xiong,A. B. Karki,D. P. Young,P. W. Adams###
(952172, 952174)
 In contrast, the corresponding negative MR in Be/Au films isgreatly diminished, suggesting that, in the presence of strong SOS, the quantummetal phase can only be reached at field scales well beyond those typicallyavailable in a low temperature laboratory.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

No
###Magnetotransport through graphene spin valves|Kai-He Ding,Zhen-Gang Zhu,Jamal Berakdar###
(952304, 952304)
 No gate voltage is applied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0
Abstract does not contain any numbers.

In
###Magnetotransport through graphene spin valves|Kai-He Ding,Zhen-Gang Zhu,Jamal Berakdar###
(952478, 952478)
In presence of a static external magnetic field the differential conductanceand TMR as a function of the bias voltage and the strength of the magneticfield show periodic oscillations due to Landau-level crossings.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Nonvolatile SRAM architecture using MOSFET-based spin-transistors|Yusuke Shuto,Shuu'ichirou Yamamoto,Satoshi Sugahara###
(952604, 952604)
Nonvolatile SRAM architecture using M<missing VAR>OSFET-based spin-transistors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OSF
###Nonvolatile SRAM architecture using MOSFET-based spin-transistors|Yusuke Shuto,Shuu'ichirou Yamamoto,Satoshi Sugahara###
(952614, 952616)
Nonvolatile SRAM architecture using M<missing VAR>OSFET-based spin-transistors.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NV
###Nonvolatile SRAM architecture using MOSFET-based spin-transistors|Yusuke Shuto,Shuu'ichirou Yamamoto,Satoshi Sugahara###
(952651, 952652)
 The authors proposed and computationally analyzed nonvolatile static randomaccess memory (NV-SRAM) architecture using metal-oxide-semiconductorfield-effect transistor (M<missing VAR>OSFET) type of spin-transistors referred to aspseudo-spin-M<missing VAR>OSFET (PS-M<missing VAR>OSFET).
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Nonvolatile SRAM architecture using MOSFET-based spin-transistors|Yusuke Shuto,Shuu'ichirou Yamamoto,Satoshi Sugahara###
(952654, 952654)
 The authors proposed and computationally analyzed nonvolatile static randomaccess memory (NV-SRAM) architecture using metal-oxide-semiconductorfield-effect transistor (M<missing VAR>OSFET) type of spin-transistors referred to aspseudo-spin-M<missing VAR>OSFET (PS-M<missing VAR>OSFET).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OSF
###Nonvolatile SRAM architecture using MOSFET-based spin-transistors|Yusuke Shuto,Shuu'ichirou Yamamoto,Satoshi Sugahara###
(952679, 952681)
 The authors proposed and computationally analyzed nonvolatile static randomaccess memory (NV-SRAM) architecture using metal-oxide-semiconductorfield-effect transistor (M<missing VAR>OSFET) type of spin-transistors referred to aspseudo-spin-M<missing VAR>OSFET (PS-M<missing VAR>OSFET).
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OSF
###Nonvolatile SRAM architecture using MOSFET-based spin-transistors|Yusuke Shuto,Shuu'ichirou Yamamoto,Satoshi Sugahara###
(952706, 952708)
 The authors proposed and computationally analyzed nonvolatile static randomaccess memory (NV-SRAM) architecture using metal-oxide-semiconductorfield-effect transistor (M<missing VAR>OSFET) type of spin-transistors referred to aspseudo-spin-M<missing VAR>OSFET (PS-M<missing VAR>OSFET).
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PS
###Nonvolatile SRAM architecture using MOSFET-based spin-transistors|Yusuke Shuto,Shuu'ichirou Yamamoto,Satoshi Sugahara###
(952713, 952714)
 The authors proposed and computationally analyzed nonvolatile static randomaccess memory (NV-SRAM) architecture using metal-oxide-semiconductorfield-effect transistor (M<missing VAR>OSFET) type of spin-transistors referred to aspseudo-spin-M<missing VAR>OSFET (PS-M<missing VAR>OSFET).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OSF
###Nonvolatile SRAM architecture using MOSFET-based spin-transistors|Yusuke Shuto,Shuu'ichirou Yamamoto,Satoshi Sugahara###
(952717, 952719)
 The authors proposed and computationally analyzed nonvolatile static randomaccess memory (NV-SRAM) architecture using metal-oxide-semiconductorfield-effect transistor (M<missing VAR>OSFET) type of spin-transistors referred to aspseudo-spin-M<missing VAR>OSFET (PS-M<missing VAR>OSFET).
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PS
###Nonvolatile SRAM architecture using MOSFET-based spin-transistors|Yusuke Shuto,Shuu'ichirou Yamamoto,Satoshi Sugahara###
(952725, 952726)
 PS-M<missing VAR>OSFET is a new circuit approach toreproduce the functions of spin-transistors, based on recently progressedmagnetoresistive random access memory (MRAM) technology.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OSF
###Nonvolatile SRAM architecture using MOSFET-based spin-transistors|Yusuke Shuto,Shuu'ichirou Yamamoto,Satoshi Sugahara###
(952729, 952731)
 PS-M<missing VAR>OSFET is a new circuit approach toreproduce the functions of spin-transistors, based on recently progressedmagnetoresistive random access memory (MRAM) technology.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NV
###Nonvolatile SRAM architecture using MOSFET-based spin-transistors|Yusuke Shuto,Shuu'ichirou Yamamoto,Satoshi Sugahara###
(952792, 952793)
 The proposed NV-SRAMcell can be simply configured by connecting two PS-M<missing VAR>OSFE<missing VAR>Ts to the storage nodesof a standard SRAM cell.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Nonvolatile SRAM architecture using MOSFET-based spin-transistors|Yusuke Shuto,Shuu'ichirou Yamamoto,Satoshi Sugahara###
(952795, 952795)
 The proposed NV-SRAMcell can be simply configured by connecting two PS-M<missing VAR>OSFE<missing VAR>Ts to the storage nodesof a standard SRAM cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PS
###Nonvolatile SRAM architecture using MOSFET-based spin-transistors|Yusuke Shuto,Shuu'ichirou Yamamoto,Satoshi Sugahara###
(952817, 952818)
 The proposed NV-SRAMcell can be simply configured by connecting two PS-M<missing VAR>OSFE<missing VAR>Ts to the storage nodesof a standard SRAM cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OSF
###Nonvolatile SRAM architecture using MOSFET-based spin-transistors|Yusuke Shuto,Shuu'ichirou Yamamoto,Satoshi Sugahara###
(952821, 952823)
 The proposed NV-SRAMcell can be simply configured by connecting two PS-M<missing VAR>OSFE<missing VAR>Ts to the storage nodesof a standard SRAM cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Nonvolatile SRAM architecture using MOSFET-based spin-transistors|Yusuke Shuto,Shuu'ichirou Yamamoto,Satoshi Sugahara###
(952842, 952842)
 The proposed NV-SRAMcell can be simply configured by connecting two PS-M<missing VAR>OSFE<missing VAR>Ts to the storage nodesof a standard SRAM cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PS
###Nonvolatile SRAM architecture using MOSFET-based spin-transistors|Yusuke Shuto,Shuu'ichirou Yamamoto,Satoshi Sugahara###
(952893, 952894)
 The logic information of the storage nodes can beelectrically stored into the magnetic tunnel junctions (MTJs) of the PS-M<missing VAR>OSFE<missing VAR>Tsby current-induced magnetization switching (CIM<missing VAR>S), and the stored informationis automatically restored when the inverter loop circuit wakes up.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OSF
###Nonvolatile SRAM architecture using MOSFET-based spin-transistors|Yusuke Shuto,Shuu'ichirou Yamamoto,Satoshi Sugahara###
(952897, 952899)
 The logic information of the storage nodes can beelectrically stored into the magnetic tunnel junctions (MTJs) of the PS-M<missing VAR>OSFE<missing VAR>Tsby current-induced magnetization switching (CIM<missing VAR>S), and the stored informationis automatically restored when the inverter loop circuit wakes up.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CI
###Nonvolatile SRAM architecture using MOSFET-based spin-transistors|Yusuke Shuto,Shuu'ichirou Yamamoto,Satoshi Sugahara###
(952915, 952916)
 The logic information of the storage nodes can beelectrically stored into the magnetic tunnel junctions (MTJs) of the PS-M<missing VAR>OSFE<missing VAR>Tsby current-induced magnetization switching (CIM<missing VAR>S), and the stored informationis automatically restored when the inverter loop circuit wakes up.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Nonvolatile SRAM architecture using MOSFET-based spin-transistors|Yusuke Shuto,Shuu'ichirou Yamamoto,Satoshi Sugahara###
(952918, 952918)
 The logic information of the storage nodes can beelectrically stored into the magnetic tunnel junctions (MTJs) of the PS-M<missing VAR>OSFE<missing VAR>Tsby current-induced magnetization switching (CIM<missing VAR>S), and the stored informationis automatically restored when the inverter loop circuit wakes up.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Nonvolatile SRAM architecture using MOSFET-based spin-transistors|Yusuke Shuto,Shuu'ichirou Yamamoto,Satoshi Sugahara###
(952952, 952952)
 In addition,the proposed NV-SRAM cell has no influence on the performance of normal SRAMoperations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NV
###Nonvolatile SRAM architecture using MOSFET-based spin-transistors|Yusuke Shuto,Shuu'ichirou Yamamoto,Satoshi Sugahara###
(952962, 952963)
 In addition,the proposed NV-SRAM cell has no influence on the performance of normal SRAMoperations.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Nonvolatile SRAM architecture using MOSFET-based spin-transistors|Yusuke Shuto,Shuu'ichirou Yamamoto,Satoshi Sugahara###
(952965, 952965)
 In addition,the proposed NV-SRAM cell has no influence on the performance of normal SRAMoperations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Nonvolatile SRAM architecture using MOSFET-based spin-transistors|Yusuke Shuto,Shuu'ichirou Yamamoto,Satoshi Sugahara###
(952988, 952988)
 In addition,the proposed NV-SRAM cell has no influence on the performance of normal SRAMoperations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NV
###Nonvolatile SRAM architecture using MOSFET-based spin-transistors|Yusuke Shuto,Shuu'ichirou Yamamoto,Satoshi Sugahara###
(953032, 953033)
 Low power dissipation and high degree of freedom of MTJ design arealso remarkable features for NV-SRAM using PS-M<missing VAR>OSFE<missing VAR>Ts.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Nonvolatile SRAM architecture using MOSFET-based spin-transistors|Yusuke Shuto,Shuu'ichirou Yamamoto,Satoshi Sugahara###
(953035, 953035)
 Low power dissipation and high degree of freedom of MTJ design arealso remarkable features for NV-SRAM using PS-M<missing VAR>OSFE<missing VAR>Ts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PS
###Nonvolatile SRAM architecture using MOSFET-based spin-transistors|Yusuke Shuto,Shuu'ichirou Yamamoto,Satoshi Sugahara###
(953042, 953043)
 Low power dissipation and high degree of freedom of MTJ design arealso remarkable features for NV-SRAM using PS-M<missing VAR>OSFE<missing VAR>Ts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OSF
###Nonvolatile SRAM architecture using MOSFET-based spin-transistors|Yusuke Shuto,Shuu'ichirou Yamamoto,Satoshi Sugahara###
(953046, 953048)
 Low power dissipation and high degree of freedom of MTJ design arealso remarkable features for NV-SRAM using PS-M<missing VAR>OSFE<missing VAR>Ts.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tb5Si3
###Enhancement of positive magnetoresistance following a magnetic-field-induced ferromagnetic transition in an intermetallic compound, Tb5Si3|S. Narayana Jammalamadaka,Niharika Mohapatra,Sitikantha D Das,E. V. Sampathkumaran###
(953092, 953095)
Enhancement of positive magnetoresistance following a magnetic-field-induced ferromagnetic transition in an intermetallic compound, Tb5Si3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.375,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.625,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 1.8, 'K', 1],[76.0, 60, 'kOe', 1],[96.0, 20, 'K', 1],[186.0, 100, 'kOe', 3]

K
###Enhancement of positive magnetoresistance following a magnetic-field-induced ferromagnetic transition in an intermetallic compound, Tb5Si3|S. Narayana Jammalamadaka,Niharika Mohapatra,Sitikantha D Das,E. V. Sampathkumaran###
(953133, 953133)
 We report the existence of a field-induced ferromagnetic transition in themagnetically ordered state (<69 K) of an intermetallic compound, Tb5Si3, andthis transition is distinctly first-order at 1.8 K (near 60 kOe), whereas itappears to become second order near 20 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 1.8, 'K', 0],[38.0, 60, 'kOe', 0],[58.0, 20, 'K', 0],[148.0, 100, 'kOe', 2]

Tb5Si3
###Enhancement of positive magnetoresistance following a magnetic-field-induced ferromagnetic transition in an intermetallic compound, Tb5Si3|S. Narayana Jammalamadaka,Niharika Mohapatra,Sitikantha D Das,E. V. Sampathkumaran###
(953145, 953148)
 We report the existence of a field-induced ferromagnetic transition in themagnetically ordered state (<69 K) of an intermetallic compound, Tb5Si3, andthis transition is distinctly first-order at 1.8 K (near 60 kOe), whereas itappears to become second order near 20 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.375,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.625,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 1.8, 'K', 0],[23.0, 60, 'kOe', 0],[43.0, 20, 'K', 0],[133.0, 100, 'kOe', 2]

Ba1-x
###Critical properties of superconducting Ba1-xKxFe2As2|A. Bharathi,Shilpam Sharma,R. Paulraj,A. T. Satya,Y. Hariharan,C. S. Sundar###
(953357, 953360)
Critical properties of superconducting Ba1-xKxFe2As2.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[144.0, 16, 'T', 4],[147.0, 4.2, 'K', 4],[150.0, 20, 'K', 4],[209.0, 4.2, 'K', 5],[212.0, 5, 'T', 5],[293.0, -7.708, 'T', 7],[298.0, -5.57, 'T', 7]

Fe2As2
###Critical properties of superconducting Ba1-xKxFe2As2|A. Bharathi,Shilpam Sharma,R. Paulraj,A. T. Satya,Y. Hariharan,C. S. Sundar###
(953362, 953365)
Critical properties of superconducting Ba1-xKxFe2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 16, 'T', 4],[142.0, 4.2, 'K', 4],[145.0, 20, 'K', 4],[204.0, 4.2, 'K', 5],[207.0, 5, 'T', 5],[288.0, -7.708, 'T', 7],[293.0, -5.57, 'T', 7]

Ba1-x
###Critical properties of superconducting Ba1-xKxFe2As2|A. Bharathi,Shilpam Sharma,R. Paulraj,A. T. Satya,Y. Hariharan,C. S. Sundar###
(953389, 953392)
 Magnetisation and magnetoresistance measurements have been carried out onsuperconducting Ba1-xKxFe2As2 samples with x<missing VAR>0.40 and 0.50.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[112.0, 16, 'T', 3],[115.0, 4.2, 'K', 3],[118.0, 20, 'K', 3],[177.0, 4.2, 'K', 4],[180.0, 5, 'T', 4],[261.0, -7.708, 'T', 6],[266.0, -5.57, 'T', 6]

Fe2As2
###Critical properties of superconducting Ba1-xKxFe2As2|A. Bharathi,Shilpam Sharma,R. Paulraj,A. T. Satya,Y. Hariharan,C. S. Sundar###
(953394, 953397)
 Magnetisation and magnetoresistance measurements have been carried out onsuperconducting Ba1-xKxFe2As2 samples with x<missing VAR>0.40 and 0.50.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 16, 'T', 3],[110.0, 4.2, 'K', 3],[113.0, 20, 'K', 3],[172.0, 4.2, 'K', 4],[175.0, 5, 'T', 4],[256.0, -7.708, 'T', 6],[261.0, -5.57, 'T', 6]

C
###Critical properties of superconducting Ba1-xKxFe2As2|A. Bharathi,Shilpam Sharma,R. Paulraj,A. T. Satya,Y. Hariharan,C. S. Sundar###
(953435, 953435)
 From low fieldmagnetization data carried out at different temperatures below T<missing VAR>C, HC1 has beenextracted.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 16, 'T', 2],[72.0, 4.2, 'K', 2],[75.0, 20, 'K', 2],[134.0, 4.2, 'K', 3],[137.0, 5, 'T', 3],[218.0, -7.708, 'T', 5],[223.0, -5.57, 'T', 5]

HC1
###Critical properties of superconducting Ba1-xKxFe2As2|A. Bharathi,Shilpam Sharma,R. Paulraj,A. T. Satya,Y. Hariharan,C. S. Sundar###
(953438, 953440)
 From low fieldmagnetization data carried out at different temperatures below T<missing VAR>C, HC1 has beenextracted.
Featurization terminated normally.
0.5,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 16, 'T', 2],[67.0, 4.2, 'K', 2],[70.0, 20, 'K', 2],[129.0, 4.2, 'K', 3],[132.0, 5, 'T', 3],[213.0, -7.708, 'T', 5],[218.0, -5.57, 'T', 5]

HC1
###Critical properties of superconducting Ba1-xKxFe2As2|A. Bharathi,Shilpam Sharma,R. Paulraj,A. T. Satya,Y. Hariharan,C. S. Sundar###
(953456, 953458)
 The plot of HC1 versus temperature shows an anomalous increase atlow temperatures.
Featurization terminated normally.
0.5,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 16, 'T', 1],[49.0, 4.2, 'K', 1],[52.0, 20, 'K', 1],[111.0, 4.2, 'K', 2],[114.0, 5, 'T', 2],[195.0, -7.708, 'T', 4],[200.0, -5.57, 'T', 4]

C
###Critical properties of superconducting Ba1-xKxFe2As2|A. Bharathi,Shilpam Sharma,R. Paulraj,A. T. Satya,Y. Hariharan,C. S. Sundar###
(953544, 953544)
 The J<missing VAR>C determined from thehigh field data is >104A/cm2 at 4.2 K and 5 T.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 16, 'T', 1],[37.0, 4.2, 'K', 1],[34.0, 20, 'K', 1],[25.0, 4.2, 'K', 0],[28.0, 5, 'T', 0],[109.0, -7.708, 'T', 2],[114.0, -5.57, 'T', 2]

C
###Critical properties of superconducting Ba1-xKxFe2As2|A. Bharathi,Shilpam Sharma,R. Paulraj,A. T. Satya,Y. Hariharan,C. S. Sundar###
(953621, 953621)
 From the variation of the T<missing VAR>C onset with applied field, d<missing VAR>HC2/dT at T<missing VAR>C wasobtained to be -7.708 T/K and -5.57 T/K in the samples with x<missing VAR>0.40 and 0.50.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 16, 'T', 3],[114.0, 4.2, 'K', 3],[111.0, 20, 'K', 3],[52.0, 4.2, 'K', 2],[49.0, 5, 'T', 2],[32.0, -7.708, 'T', 0],[37.0, -5.57, 'T', 0]

HC2
###Critical properties of superconducting Ba1-xKxFe2As2|A. Bharathi,Shilpam Sharma,R. Paulraj,A. T. Satya,Y. Hariharan,C. S. Sundar###
(953633, 953635)
 From the variation of the T<missing VAR>C onset with applied field, d<missing VAR>HC2/dT at T<missing VAR>C wasobtained to be -7.708 T/K and -5.57 T/K in the samples with x<missing VAR>0.40 and 0.50.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 16, 'T', 3],[126.0, 4.2, 'K', 3],[123.0, 20, 'K', 3],[64.0, 4.2, 'K', 2],[61.0, 5, 'T', 2],[18.0, -7.708, 'T', 0],[23.0, -5.57, 'T', 0]

C
###Critical properties of superconducting Ba1-xKxFe2As2|A. Bharathi,Shilpam Sharma,R. Paulraj,A. T. Satya,Y. Hariharan,C. S. Sundar###
(953643, 953643)
 From the variation of the T<missing VAR>C onset with applied field, d<missing VAR>HC2/dT at T<missing VAR>C wasobtained to be -7.708 T/K and -5.57 T/K in the samples with x<missing VAR>0.40 and 0.50.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 16, 'T', 3],[136.0, 4.2, 'K', 3],[133.0, 20, 'K', 3],[74.0, 4.2, 'K', 2],[71.0, 5, 'T', 2],[10.0, -7.708, 'T', 0],[15.0, -5.57, 'T', 0]

K
###Critical properties of superconducting Ba1-xKxFe2As2|A. Bharathi,Shilpam Sharma,R. Paulraj,A. T. Satya,Y. Hariharan,C. S. Sundar###
(953655, 953655)
 From the variation of the T<missing VAR>C onset with applied field, d<missing VAR>HC2/dT at T<missing VAR>C wasobtained to be -7.708 T/K and -5.57 T/K in the samples with x<missing VAR>0.40 and 0.50.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 16, 'T', 3],[148.0, 4.2, 'K', 3],[145.0, 20, 'K', 3],[86.0, 4.2, 'K', 2],[83.0, 5, 'T', 2],[2.0, -7.708, 'T', 0],[3.0, -5.57, 'T', 0]

K
###Critical properties of superconducting Ba1-xKxFe2As2|A. Bharathi,Shilpam Sharma,R. Paulraj,A. T. Satya,Y. Hariharan,C. S. Sundar###
(953660, 953660)
 From the variation of the T<missing VAR>C onset with applied field, d<missing VAR>HC2/dT at T<missing VAR>C wasobtained to be -7.708 T/K and -5.57 T/K in the samples with x<missing VAR>0.40 and 0.50.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 16, 'T', 3],[153.0, 4.2, 'K', 3],[150.0, 20, 'K', 3],[91.0, 4.2, 'K', 2],[88.0, 5, 'T', 2],[7.0, -7.708, 'T', 0],[2.0, -5.57, 'T', 0]

EuRh2As2
###Unusual Magnetic, Thermal, and Transport Behaviors of Single Crystal EuRh2As2|Yogesh Singh,Y. Lee,B. N. Harmon,D. C. Johnston###
(953706, 953710)
Unusual Magnetic, Thermal, and Transport Behaviors of Single Crystal EuRh2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 47, 'K', 1],[54.0, 12, 'K', 1],[166.0, 38, '%', 4],[170.0, 9, 'T', 4],[210.0, 25, 'K', 5]

EuRh2As2
###Unusual Magnetic, Thermal, and Transport Behaviors of Single Crystal EuRh2As2|Yogesh Singh,Y. Lee,B. N. Harmon,D. C. Johnston###
(953729, 953733)
 An antiferromagnetic transition is observed in single crystal EuRh2As2 at ahigh temperature T<missing VAR>N  47 K compared to the ferromagnetic Weiss temperaturetheta  12 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 47, 'K', 0],[31.0, 12, 'K', 0],[143.0, 38, '%', 3],[147.0, 9, 'T', 3],[187.0, 25, 'K', 4]

N
###Unusual Magnetic, Thermal, and Transport Behaviors of Single Crystal EuRh2As2|Yogesh Singh,Y. Lee,B. N. Harmon,D. C. Johnston###
(953745, 953745)
 An antiferromagnetic transition is observed in single crystal EuRh2As2 at ahigh temperature T<missing VAR>N  47 K compared to the ferromagnetic Weiss temperaturetheta  12 K.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 47, 'K', 0],[19.0, 12, 'K', 0],[131.0, 38, '%', 3],[135.0, 9, 'T', 3],[175.0, 25, 'K', 4]

N
###Unusual Magnetic, Thermal, and Transport Behaviors of Single Crystal EuRh2As2|Yogesh Singh,Y. Lee,B. N. Harmon,D. C. Johnston###
(953818, 953818)
 A first-order field-induced magnetic transition is observed at T<missing VAR> < T<missing VAR>Nwith an unusual temperature dependence of the transition field.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 47, 'K', 2],[54.0, 12, 'K', 2],[58.0, 38, '%', 1],[62.0, 9, 'T', 1],[102.0, 25, 'K', 2]

K
###Unusual Magnetic, Thermal, and Transport Behaviors of Single Crystal EuRh2As2|Yogesh Singh,Y. Lee,B. N. Harmon,D. C. Johnston###
(953872, 953872)
 A dramaticmagnetic field-induced reduction of the electronic specific heat coefficient at1.8-5.0 K by 38% at 9 T is observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 47, 'K', 3],[108.0, 12, 'K', 3],[4.0, 38, '%', 0],[8.0, 9, 'T', 0],[48.0, 25, 'K', 1]

In
###Unusual Magnetic, Thermal, and Transport Behaviors of Single Crystal EuRh2As2|Yogesh Singh,Y. Lee,B. N. Harmon,D. C. Johnston###
(953887, 953887)
 In addition, a strong positivemagnetoresistance and a large change in the Hall coefficient occur below 25 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 47, 'K', 4],[123.0, 12, 'K', 4],[11.0, 38, '%', 1],[7.0, 9, 'T', 1],[33.0, 25, 'K', 0]

S
###Correlations between the morphology and the electronic structure at the surface of thin film manganites, investigated with STM|S. Kelly,F. Galli,I. Komissarov,J. Aarts###
(954013, 954013)
Correlations between the morphology and the electronic structure at the surface of thin film manganites, investigated with STM.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.67Ca0.33MnO3
###Correlations between the morphology and the electronic structure at the surface of thin film manganites, investigated with STM|S. Kelly,F. Galli,I. Komissarov,J. Aarts###
(954033, 954039)
 Thin-film colossal magnetoresistance manganites such asLa0.67Ca0.33MnO3 (LCMO) have now been intensely studied for morethan a decade, but the issue of possible nanoscale electronic phase separationis not fully solved.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.066,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.134,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Correlations between the morphology and the electronic structure at the surface of thin film manganites, investigated with STM|S. Kelly,F. Galli,I. Komissarov,J. Aarts###
(954045, 954045)
 Thin-film colossal magnetoresistance manganites such asLa0.67Ca0.33MnO3 (LCMO) have now been intensely studied for morethan a decade, but the issue of possible nanoscale electronic phase separationis not fully solved.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Correlations between the morphology and the electronic structure at the surface of thin film manganites, investigated with STM|S. Kelly,F. Galli,I. Komissarov,J. Aarts###
(954109, 954109)
 Scanning Tunneling Microscopy / Spectroscopy (ST<missing VAR>S) hasbeen pivotal in studying phase separation, but is hindered by being surface-rather than bulk-sensitive.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Correlations between the morphology and the electronic structure at the surface of thin film manganites, investigated with STM|S. Kelly,F. Galli,I. Komissarov,J. Aarts###
(954111, 954111)
 Scanning Tunneling Microscopy / Spectroscopy (ST<missing VAR>S) hasbeen pivotal in studying phase separation, but is hindered by being surface-rather than bulk-sensitive.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Correlations between the morphology and the electronic structure at the surface of thin film manganites, investigated with STM|S. Kelly,F. Galli,I. Komissarov,J. Aarts###
(954162, 954162)
 For our sputtered LCMO films the data indicates astrong correlation between surface morphology and signatures of phaseseparation; rough films show phase separation while atomically flat films areelectronically homogeneous but have a more or less inactive surface layer.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Correlations between the morphology and the electronic structure at the surface of thin film manganites, investigated with STM|S. Kelly,F. Galli,I. Komissarov,J. Aarts###
(954290, 954290)
 Many of the reported conclusions about electronicinhomogeneities measured by ST<missing VAR>S have been confused by this issue.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Correlations between the morphology and the electronic structure at the surface of thin film manganites, investigated with STM|S. Kelly,F. Galli,I. Komissarov,J. Aarts###
(954292, 954292)
 Many of the reported conclusions about electronicinhomogeneities measured by ST<missing VAR>S have been confused by this issue.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YbCu5-xAu
###Magnetic-field-induced reentrance of Fermi-liquid behavior and spin-lattice relaxation rates in YbCu_{5-x}Au_x|V. R. Shaginyan,A. Z. Msezane,K. G. Popov,V. A. Stephanovich###
(954392, 954397)
Magnetic-field-induced reentrance of Fermi-liquid behavior and spin-lattice relaxation rates in YbCu5-xAux<missing VAR>.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

Cu
###Magnetic-field-induced reentrance of Fermi-liquid behavior and spin-lattice relaxation rates in YbCu_{5-x}Au_x|V. R. Shaginyan,A. Z. Msezane,K. G. Popov,V. A. Stephanovich###
(954462, 954462)
 A strong departure from Landau-Fermi liquid (LFL) behavior have been recentlyrevealed in observed anomalies in both the magnetic susceptibility chi andthe muon and rm 63Cu nuclear spin-lattice relaxation rates 1/T<missing VAR>1 ofrm YbCu5-xAux<missing VAR> (x<missing VAR>0.6).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YbCu5-xAu
###Magnetic-field-induced reentrance of Fermi-liquid behavior and spin-lattice relaxation rates in YbCu_{5-x}Au_x|V. R. Shaginyan,A. Z. Msezane,K. G. Popov,V. A. Stephanovich###
(954484, 954489)
 A strong departure from Landau-Fermi liquid (LFL) behavior have been recentlyrevealed in observed anomalies in both the magnetic susceptibility chi andthe muon and rm 63Cu nuclear spin-lattice relaxation rates 1/T<missing VAR>1 ofrm YbCu5-xAux<missing VAR> (x<missing VAR>0.6).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

FC
###Magnetic-field-induced reentrance of Fermi-liquid behavior and spin-lattice relaxation rates in YbCu_{5-x}Au_x|V. R. Shaginyan,A. Z. Msezane,K. G. Popov,V. A. Stephanovich###
(954592, 954593)
 We obtain the scalingbehavior theoretically utilizing our approach based on fermion condensationquantum phase transition (FCQPT) notion.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FC
###Magnetic-field-induced reentrance of Fermi-liquid behavior and spin-lattice relaxation rates in YbCu_{5-x}Au_x|V. R. Shaginyan,A. Z. Msezane,K. G. Popov,V. A. Stephanovich###
(954623, 954624)
 Our theoretical analysis ofexperimental data on the base of FCQPT approach permits not only to explainabove two experimental facts in a unified manner, but to clarify the physicalreasons for a scaling behavior of the longitudinal magnetoresistance in rmYbRh2Si2.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YbRh2Si2
###Magnetic-field-induced reentrance of Fermi-liquid behavior and spin-lattice relaxation rates in YbCu_{5-x}Au_x|V. R. Shaginyan,A. Z. Msezane,K. G. Popov,V. A. Stephanovich###
(954693, 954697)
 Our theoretical analysis ofexperimental data on the base of FCQPT approach permits not only to explainabove two experimental facts in a unified manner, but to clarify the physicalreasons for a scaling behavior of the longitudinal magnetoresistance in rmYbRh2Si2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CeCoIn5
###Energy scales and magnetoresistance at a quantum critical point|V. R. Shaginyan,M. Ya. Amusia,A. Z. Msezane,K. G. Popov,V. A. Stephanovich###
(954738, 954741)
 The magnetoresistance (MR) of CeCoIn5 is notably different from that in manyconventional metals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7142857142857143,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Energy scales and magnetoresistance at a quantum critical point|V. R. Shaginyan,M. Ya. Amusia,A. Z. Msezane,K. G. Popov,V. A. Stephanovich###
(954823, 954823)
 At a quantum criticalpoint (Q<missing VAR>CP) this dependence generates kinks (crossover points from fast to slowgrowth) in thermodynamic characteristics (like specific heat, magnetizationetc) at some temperatures when a strongly correlated electron system transitsfrom the magnetic field induced Landau Fermi liquid (LFL) regime to thenon-Fermi liquid (NFL) one taking place at rising temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Energy scales and magnetoresistance at a quantum critical point|V. R. Shaginyan,M. Ya. Amusia,A. Z. Msezane,K. G. Popov,V. A. Stephanovich###
(954837, 954837)
 At a quantum criticalpoint (Q<missing VAR>CP) this dependence generates kinks (crossover points from fast to slowgrowth) in thermodynamic characteristics (like specific heat, magnetizationetc) at some temperatures when a strongly correlated electron system transitsfrom the magnetic field induced Landau Fermi liquid (LFL) regime to thenon-Fermi liquid (NFL) one taking place at rising temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NF
###Energy scales and magnetoresistance at a quantum critical point|V. R. Shaginyan,M. Ya. Amusia,A. Z. Msezane,K. G. Popov,V. A. Stephanovich###
(954942, 954943)
 At a quantum criticalpoint (Q<missing VAR>CP) this dependence generates kinks (crossover points from fast to slowgrowth) in thermodynamic characteristics (like specific heat, magnetizationetc) at some temperatures when a strongly correlated electron system transitsfrom the magnetic field induced Landau Fermi liquid (LFL) regime to thenon-Fermi liquid (NFL) one taking place at rising temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CP
###Energy scales and magnetoresistance at a quantum critical point|V. R. Shaginyan,M. Ya. Amusia,A. Z. Msezane,K. G. Popov,V. A. Stephanovich###
(954990, 954991)
 We show thatthe above kink-like peculiarity separates two distinct energy scales in Q<missing VAR>CPvicinity - low temperature LFL scale and high temperature one related to NFL<missing VAR>regime.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NF
###Energy scales and magnetoresistance at a quantum critical point|V. R. Shaginyan,M. Ya. Amusia,A. Z. Msezane,K. G. Popov,V. A. Stephanovich###
(955020, 955021)
 We show thatthe above kink-like peculiarity separates two distinct energy scales in Q<missing VAR>CPvicinity - low temperature LFL scale and high temperature one related to NFL<missing VAR>regime.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Spin currents and magnetoresistance of graphene-based magnetic junctions|Alireza Saffarzadeh,Mahdi Ghorbani Asl###
(955180, 955180)
 Using the tight-binding approximation and the nonequilibrium Greens<missing VAR> functionapproach, we investigate the coherent spin-dependent transport in planarmagnetic junctions consisting of two ferromagnetic (FM) electrodes separated bya graphene flake (G<missing VAR>F) with zigzag or armchair interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Spin currents and magnetoresistance of graphene-based magnetic junctions|Alireza Saffarzadeh,Mahdi Ghorbani Asl###
(955199, 955199)
 Using the tight-binding approximation and the nonequilibrium Greens<missing VAR> functionapproach, we investigate the coherent spin-dependent transport in planarmagnetic junctions consisting of two ferromagnetic (FM) electrodes separated bya graphene flake (G<missing VAR>F) with zigzag or armchair interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Spin currents and magnetoresistance of graphene-based magnetic junctions|Alireza Saffarzadeh,Mahdi Ghorbani Asl###
(955247, 955247)
 It is found that theelectron conduction strongly depends on the geometry of contact between the G<missing VAR>Fand the FM<missing VAR> electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Spin currents and magnetoresistance of graphene-based magnetic junctions|Alireza Saffarzadeh,Mahdi Ghorbani Asl###
(955254, 955254)
 It is found that theelectron conduction strongly depends on the geometry of contact between the G<missing VAR>Fand the FM<missing VAR> electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin currents and magnetoresistance of graphene-based magnetic junctions|Alireza Saffarzadeh,Mahdi Ghorbani Asl###
(955260, 955260)
 In the case of zigzag interfaces, the junctiondemonstrates a spin-valve effect with high magnetoresistance (MR) ratios andshows negative differential resistance features for a single spin channel atpositive gate voltage.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin currents and magnetoresistance of graphene-based magnetic junctions|Alireza Saffarzadeh,Mahdi Ghorbani Asl###
(955334, 955334)
 In the case of armchair interfaces, the current-voltagecharacteristics behave linearly at low bias voltages and hence, both spinchannels are in on state with low MR ratios.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Metal-insulator transition in vanadium dioxide nanobeams: probing sub-domain properties of strongly correlated materials|Jiang Wei,Zenghui Wang,Wei Chen,David H. Cobden###
(955602, 955602)
 We demonstrate this principle usingvanadium dioxide, which has domain structure associated with its dramatic MITat 68 degrees C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 68, 'degrees', 0]

C
###Metal-insulator transition in vanadium dioxide nanobeams: probing sub-domain properties of strongly correlated materials|Jiang Wei,Zenghui Wang,Wei Chen,David H. Cobden###
(955658, 955658)
 Our studies of single-domain vanadium dioxide nanobeams revealnew aspects of this famous MIT, including supercooling of the metallic phase by50 degrees C; an activation energy in the insulating phase consistent with theoptical gap; and a connection between the transition and the equilibriumcarrier density in the insulating phase.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 68, 'degrees', 1]

In
###Angular dependence of the tunneling anisotropic magnetoresistance|A. Matos-Abiague,M. Gmitra,J. Fabian###
(956021, 956021)
 In particular, we predict the forms ofthe angular dependence of the TAMR in (001),(110), and (111) MTJs withstructure inversion asymmetry and/or bulk inversion asymmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 99, ',', 1]

In
###Effect of resistance feedback on spin torque-induced switching of nanomagnets|Samir Garzon,Richard A. Webb,Mark Covington,Shehzaad Kaka,Thomas M. Crawford###
(956155, 956155)
 In large magnetoresistance devices spin torque-induced changes in resistancecan produce G<missing VAR>Hz current and voltage oscillations which can affect magnetizationreversal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Effect of resistance feedback on spin torque-induced switching of nanomagnets|Samir Garzon,Richard A. Webb,Mark Covington,Shehzaad Kaka,Thomas M. Crawford###
(956203, 956203)
 In addition, capacitive shunting in large resistance devices canfurther reduce the current, adversely affecting spin torque switching.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(P)
###Effect of resistance feedback on spin torque-induced switching of nanomagnets|Samir Garzon,Richard A. Webb,Mark Covington,Shehzaad Kaka,Thomas M. Crawford###
(956336, 956338)
 While for spin valves parallel (P) toanti-parallel (AP) switching is adversely affected by the resistance feedbackdue to saturation of the spin torque, in low resistance magnetic tunneljunctions P-AP switching is enhanced.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Effect of resistance feedback on spin torque-induced switching of nanomagnets|Samir Garzon,Richard A. Webb,Mark Covington,Shehzaad Kaka,Thomas M. Crawford###
(956349, 956349)
 While for spin valves parallel (P) toanti-parallel (AP) switching is adversely affected by the resistance feedbackdue to saturation of the spin torque, in low resistance magnetic tunneljunctions P-AP switching is enhanced.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Effect of resistance feedback on spin torque-induced switching of nanomagnets|Samir Garzon,Richard A. Webb,Mark Covington,Shehzaad Kaka,Thomas M. Crawford###
(956397, 956397)
 While for spin valves parallel (P) toanti-parallel (AP) switching is adversely affected by the resistance feedbackdue to saturation of the spin torque, in low resistance magnetic tunneljunctions P-AP switching is enhanced.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Effect of resistance feedback on spin torque-induced switching of nanomagnets|Samir Garzon,Richard A. Webb,Mark Covington,Shehzaad Kaka,Thomas M. Crawford###
(956400, 956400)
 While for spin valves parallel (P) toanti-parallel (AP) switching is adversely affected by the resistance feedbackdue to saturation of the spin torque, in low resistance magnetic tunneljunctions P-AP switching is enhanced.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Effect of resistance feedback on spin torque-induced switching of nanomagnets|Samir Garzon,Richard A. Webb,Mark Covington,Shehzaad Kaka,Thomas M. Crawford###
(956468, 956468)
 We study the effect of resistancefeedback on the switching time of MTJs, and show that magnetization switchingis only affected by capacitive shunting in the p<missing VAR>F range.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La2
###Role of Oxygen Electrons in the Metal-Insulator Transition in the Magnetoresistive Oxide La$_{2-2x}$Sr$_{1+2x}$Mn$_2$O$_7$ Probed by Compton Scattering|B. Barbiellini,A. Koizumi,P. E. Mijnarends,W. Al-Sawai,Hsin Lin,T. Nagao,K. Hirota,M. Itou,Y. Sakurai,A. Bansil###
(956507, 956508)
Role of Oxygen Electrons in the Metal-Insulator Transition in the Magnetoresistive Oxide La2-2x<missing VAR>Sr12x<missing VAR>Mn2O7 Probed by Compton Scattering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 7, 'T', 3]

Sr12
###Role of Oxygen Electrons in the Metal-Insulator Transition in the Magnetoresistive Oxide La$_{2-2x}$Sr$_{1+2x}$Mn$_2$O$_7$ Probed by Compton Scattering|B. Barbiellini,A. Koizumi,P. E. Mijnarends,W. Al-Sawai,Hsin Lin,T. Nagao,K. Hirota,M. Itou,Y. Sakurai,A. Bansil###
(956512, 956514)
Role of Oxygen Electrons in the Metal-Insulator Transition in the Magnetoresistive Oxide La2-2x<missing VAR>Sr12x<missing VAR>Mn2O7 Probed by Compton Scattering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 7, 'T', 3]

Mn2O7
###Role of Oxygen Electrons in the Metal-Insulator Transition in the Magnetoresistive Oxide La$_{2-2x}$Sr$_{1+2x}$Mn$_2$O$_7$ Probed by Compton Scattering|B. Barbiellini,A. Koizumi,P. E. Mijnarends,W. Al-Sawai,Hsin Lin,T. Nagao,K. Hirota,M. Itou,Y. Sakurai,A. Bansil###
(956516, 956519)
Role of Oxygen Electrons in the Metal-Insulator Transition in the Magnetoresistive Oxide La2-2x<missing VAR>Sr12x<missing VAR>Mn2O7 Probed by Compton Scattering.
Featurization terminated normally.
0,0,0,0,0,0,0,0.7777777777777778,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 7, 'T', 3]

BaFe2As2
###Low-temperature thermal conductivity of BaFe2As2: Parent compound of iron-arsenide superconductors|N. Kurita,F. Ronning,C. F. Miclea,E. D. Bauer,J. D. Thompson,A. S. Sefat,M. A. McGuire,B. C. Sales,D. Mandrus,R. Movshovich###
(956854, 956858)
Low-temperature thermal conductivity of BaFe2As2 Parent compound of iron-arsenide superconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 40, 'mK', 1],[82.0, 4, 'K', 2],[164.0, 0, 'K', 3],[184.0, 2.22, ',', 3],[220.0, 8, 'T', 4]

BaFe2As2
###Low-temperature thermal conductivity of BaFe2As2: Parent compound of iron-arsenide superconductors|N. Kurita,F. Ronning,C. F. Miclea,E. D. Bauer,J. D. Thompson,A. S. Sefat,M. A. McGuire,B. C. Sales,D. Mandrus,R. Movshovich###
(956897, 956901)
 We report low-temperature thermal conductivity down to 40 mK of theantiferromagnet BaFe2As2, which is the parent compound of recentlydiscovered iron-based superconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 40, 'mK', 0],[39.0, 4, 'K', 1],[121.0, 0, 'K', 2],[141.0, 2.22, ',', 2],[177.0, 8, 'T', 3]

In
###Low-temperature thermal conductivity of BaFe2As2: Parent compound of iron-arsenide superconductors|N. Kurita,F. Ronning,C. F. Miclea,E. D. Bauer,J. D. Thompson,A. S. Sefat,M. A. McGuire,B. C. Sales,D. Mandrus,R. Movshovich###
(956928, 956928)
 In the investigated temperature rangebelow 4 K, the thermal conductivity kappa is well described by theexpression kappa  aT<missing VAR>  bT2.22.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 40, 'mK', 1],[12.0, 4, 'K', 0],[94.0, 0, 'K', 1],[114.0, 2.22, ',', 1],[150.0, 8, 'T', 2]

O
###Correlation between Organic Magnetoresistance (OMAR) and Ferromagnetic ordering|Sayani Majumdar,Himadri Majumdar,Jan-Olof Lill,Johan Rajander,Reino Laiho,Ronald Osterbacka###
(957150, 957150)
Correlation between Organic Magnetoresistance (OMAR) and Ferromagnetic ordering.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 6, ',', 1]

F
###Correlation between Organic Magnetoresistance (OMAR) and Ferromagnetic ordering|Sayani Majumdar,Himadri Majumdar,Jan-Olof Lill,Johan Rajander,Reino Laiho,Ronald Osterbacka###
(957174, 957174)
 We report observation of ferromagnetic (FM) ordering in organicsemiconductors, namely regio-regular poly (3-hexyl thiophene) (RRP3HT) and1-(3-methoxycarbonyl)propyl-1-phenyl-[6,6]-methanofullerene (PCBM), in thetemperature range of 5-300 K in addition to magnetoresistance (OMAR) observedin the diodes made from the same materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 6, ',', 0]

P3H
###Correlation between Organic Magnetoresistance (OMAR) and Ferromagnetic ordering|Sayani Majumdar,Himadri Majumdar,Jan-Olof Lill,Johan Rajander,Reino Laiho,Ronald Osterbacka###
(957207, 957209)
 We report observation of ferromagnetic (FM) ordering in organicsemiconductors, namely regio-regular poly (3-hexyl thiophene) (RRP3HT) and1-(3-methoxycarbonyl)propyl-1-phenyl-[6,6]-methanofullerene (PCBM), in thetemperature range of 5-300 K in addition to magnetoresistance (OMAR) observedin the diodes made from the same materials.
Featurization terminated normally.
0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 6, ',', 0]

PCB
###Correlation between Organic Magnetoresistance (OMAR) and Ferromagnetic ordering|Sayani Majumdar,Himadri Majumdar,Jan-Olof Lill,Johan Rajander,Reino Laiho,Ronald Osterbacka###
(957238, 957240)
 We report observation of ferromagnetic (FM) ordering in organicsemiconductors, namely regio-regular poly (3-hexyl thiophene) (RRP3HT) and1-(3-methoxycarbonyl)propyl-1-phenyl-[6,6]-methanofullerene (PCBM), in thetemperature range of 5-300 K in addition to magnetoresistance (OMAR) observedin the diodes made from the same materials.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 6, ',', 0]

K
###Correlation between Organic Magnetoresistance (OMAR) and Ferromagnetic ordering|Sayani Majumdar,Himadri Majumdar,Jan-Olof Lill,Johan Rajander,Reino Laiho,Ronald Osterbacka###
(957260, 957260)
 We report observation of ferromagnetic (FM) ordering in organicsemiconductors, namely regio-regular poly (3-hexyl thiophene) (RRP3HT) and1-(3-methoxycarbonyl)propyl-1-phenyl-[6,6]-methanofullerene (PCBM), in thetemperature range of 5-300 K in addition to magnetoresistance (OMAR) observedin the diodes made from the same materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 6, ',', 0]

O
###Correlation between Organic Magnetoresistance (OMAR) and Ferromagnetic ordering|Sayani Majumdar,Himadri Majumdar,Jan-Olof Lill,Johan Rajander,Reino Laiho,Ronald Osterbacka###
(957271, 957271)
 We report observation of ferromagnetic (FM) ordering in organicsemiconductors, namely regio-regular poly (3-hexyl thiophene) (RRP3HT) and1-(3-methoxycarbonyl)propyl-1-phenyl-[6,6]-methanofullerene (PCBM), in thetemperature range of 5-300 K in addition to magnetoresistance (OMAR) observedin the diodes made from the same materials.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 6, ',', 0]

F
###Correlation between Organic Magnetoresistance (OMAR) and Ferromagnetic ordering|Sayani Majumdar,Himadri Majumdar,Jan-Olof Lill,Johan Rajander,Reino Laiho,Ronald Osterbacka###
(957362, 957362)
 However, upon blendingthese two materials with FM<missing VAR> signal, the FM<missing VAR> ordering is suppressed by a hugeparamagnetic (PM) signal indicating ground state charge transfer formation inthe blend.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 6, ',', 2]

F
###Correlation between Organic Magnetoresistance (OMAR) and Ferromagnetic ordering|Sayani Majumdar,Himadri Majumdar,Jan-Olof Lill,Johan Rajander,Reino Laiho,Ronald Osterbacka###
(957370, 957370)
 However, upon blendingthese two materials with FM<missing VAR> signal, the FM<missing VAR> ordering is suppressed by a hugeparamagnetic (PM) signal indicating ground state charge transfer formation inthe blend.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 6, ',', 2]

P
###Correlation between Organic Magnetoresistance (OMAR) and Ferromagnetic ordering|Sayani Majumdar,Himadri Majumdar,Jan-Olof Lill,Johan Rajander,Reino Laiho,Ronald Osterbacka###
(957389, 957389)
 However, upon blendingthese two materials with FM<missing VAR> signal, the FM<missing VAR> ordering is suppressed by a hugeparamagnetic (PM) signal indicating ground state charge transfer formation inthe blend.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[159.0, 6, ',', 2]

O
###Correlation between Organic Magnetoresistance (OMAR) and Ferromagnetic ordering|Sayani Majumdar,Himadri Majumdar,Jan-Olof Lill,Johan Rajander,Reino Laiho,Ronald Osterbacka###
(957437, 957437)
 Together with the magneto-transport studies, these results indicatethat OMAR response is observed in a device only when the corresponding activematerials are FM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[207.0, 6, ',', 3]

F
###Correlation between Organic Magnetoresistance (OMAR) and Ferromagnetic ordering|Sayani Majumdar,Himadri Majumdar,Jan-Olof Lill,Johan Rajander,Reino Laiho,Ronald Osterbacka###
(957469, 957469)
 Together with the magneto-transport studies, these results indicatethat OMAR response is observed in a device only when the corresponding activematerials are FM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[239.0, 6, ',', 3]

In
###Correlation between Organic Magnetoresistance (OMAR) and Ferromagnetic ordering|Sayani Majumdar,Himadri Majumdar,Jan-Olof Lill,Johan Rajander,Reino Laiho,Ronald Osterbacka###
(957473, 957473)
 In the diodes with P3HT<missing VAR>PCBM<missing VAR> complex, that as a blend showsPM<missing VAR> response, OMAR vanishes almost completely.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[243.0, 6, ',', 4]

P3H
###Correlation between Organic Magnetoresistance (OMAR) and Ferromagnetic ordering|Sayani Majumdar,Himadri Majumdar,Jan-Olof Lill,Johan Rajander,Reino Laiho,Ronald Osterbacka###
(957481, 957483)
 In the diodes with P3HT<missing VAR>PCBM<missing VAR> complex, that as a blend showsPM<missing VAR> response, OMAR vanishes almost completely.
Featurization terminated normally.
0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[251.0, 6, ',', 4]

PCB
###Correlation between Organic Magnetoresistance (OMAR) and Ferromagnetic ordering|Sayani Majumdar,Himadri Majumdar,Jan-Olof Lill,Johan Rajander,Reino Laiho,Ronald Osterbacka###
(957485, 957487)
 In the diodes with P3HT<missing VAR>PCBM<missing VAR> complex, that as a blend showsPM<missing VAR> response, OMAR vanishes almost completely.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[255.0, 6, ',', 4]

P
###Correlation between Organic Magnetoresistance (OMAR) and Ferromagnetic ordering|Sayani Majumdar,Himadri Majumdar,Jan-Olof Lill,Johan Rajander,Reino Laiho,Ronald Osterbacka###
(957504, 957504)
 In the diodes with P3HT<missing VAR>PCBM<missing VAR> complex, that as a blend showsPM<missing VAR> response, OMAR vanishes almost completely.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[274.0, 6, ',', 4]

O
###Correlation between Organic Magnetoresistance (OMAR) and Ferromagnetic ordering|Sayani Majumdar,Himadri Majumdar,Jan-Olof Lill,Johan Rajander,Reino Laiho,Ronald Osterbacka###
(957510, 957510)
 In the diodes with P3HT<missing VAR>PCBM<missing VAR> complex, that as a blend showsPM<missing VAR> response, OMAR vanishes almost completely.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[280.0, 6, ',', 4]

O
###Correlation between Organic Magnetoresistance (OMAR) and Ferromagnetic ordering|Sayani Majumdar,Himadri Majumdar,Jan-Olof Lill,Johan Rajander,Reino Laiho,Ronald Osterbacka###
(957551, 957551)
 We propose that ferromagnetism inthe active material can have important correlation with the OMAR response inthe diodes.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[321.0, 6, ',', 5]

Tl2Ba2CuO6
###Tracking anisotropic scattering in overdoped Tl$_2$Ba$_2$CuO$_{6+δ}$ above 100 K|M. M. J. French,J. G. Analytis,A. Carrington,L. Balicas,N. E. Hussey###
(957584, 957590)
Tracking anisotropic scattering in overdoped Tl2Ba2CuO6 above 100 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5454545454545454,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.09090909090909091,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 100, 'K', 0],[226.0, 100, 'K', 3]

Tl2Ba2CuO6
###Tracking anisotropic scattering in overdoped Tl$_2$Ba$_2$CuO$_{6+δ}$ above 100 K|M. M. J. French,J. G. Analytis,A. Carrington,L. Balicas,N. E. Hussey###
(957630, 957636)
 This article describes new polar angle-dependent magnetoresistance (ADMR)measurements in the overdoped cuprate Tl2Ba2CuO6delta over anexpanded range of temperatures and azimuthal angles.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5454545454545454,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.09090909090909091,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 100, 'K', 1],[180.0, 100, 'K', 2]

Fe2
###Evolution from Non-Fermi to Fermi Liquid Transport Properties by Isovalent Doping in BaFe2(As1-xPx)2 Superconductors|S. Kasahara,T. Shibauchi,K. Hashimoto,K. Ikada,S. Tonegawa,R. Okazaki,H. Ikeda,H. Takeya,K. Hirata,T. Terashima,Y. Matsuda###
(957916, 957917)
Evolution from Non-Fermi to Fermi Liquid Transport Properties by Isovalent Doping in BaFe2(As1-xPx)2 Superconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As1-x
###Evolution from Non-Fermi to Fermi Liquid Transport Properties by Isovalent Doping in BaFe2(As1-xPx)2 Superconductors|S. Kasahara,T. Shibauchi,K. Hashimoto,K. Ikada,S. Tonegawa,R. Okazaki,H. Ikeda,H. Takeya,K. Hirata,T. Terashima,Y. Matsuda###
(957919, 957922)
Evolution from Non-Fermi to Fermi Liquid Transport Properties by Isovalent Doping in BaFe2(As1-xPx)2 Superconductors.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

Fe2
###Evolution from Non-Fermi to Fermi Liquid Transport Properties by Isovalent Doping in BaFe2(As1-xPx)2 Superconductors|S. Kasahara,T. Shibauchi,K. Hashimoto,K. Ikada,S. Tonegawa,R. Okazaki,H. Ikeda,H. Takeya,K. Hirata,T. Terashima,Y. Matsuda###
(957960, 957961)
 The normal-state charge transport is studied systematically in high-qualitysingle crystals of BaFe2(As1-xPx)2 (0 leq x<missing VAR> leq 0.71).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As1-xP
###Evolution from Non-Fermi to Fermi Liquid Transport Properties by Isovalent Doping in BaFe2(As1-xPx)2 Superconductors|S. Kasahara,T. Shibauchi,K. Hashimoto,K. Ikada,S. Tonegawa,R. Okazaki,H. Ikeda,H. Takeya,K. Hirata,T. Terashima,Y. Matsuda###
(957963, 957967)
 The normal-state charge transport is studied systematically in high-qualitysingle crystals of BaFe2(As1-xPx)2 (0 leq x<missing VAR> leq 0.71).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

P
###Evolution from Non-Fermi to Fermi Liquid Transport Properties by Isovalent Doping in BaFe2(As1-xPx)2 Superconductors|S. Kasahara,T. Shibauchi,K. Hashimoto,K. Ikada,S. Tonegawa,R. Okazaki,H. Ikeda,H. Takeya,K. Hirata,T. Terashima,Y. Matsuda###
(957992, 957992)
 Bysubstituting isovalent P for As, the spin-density-wave (SD<missing VAR>W) state issuppressed and the dome-shaped superconducting phase (Tc lesssim 31 K)appears.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Evolution from Non-Fermi to Fermi Liquid Transport Properties by Isovalent Doping in BaFe2(As1-xPx)2 Superconductors|S. Kasahara,T. Shibauchi,K. Hashimoto,K. Ikada,S. Tonegawa,R. Okazaki,H. Ikeda,H. Takeya,K. Hirata,T. Terashima,Y. Matsuda###
(957996, 957996)
 Bysubstituting isovalent P for As, the spin-density-wave (SD<missing VAR>W) state issuppressed and the dome-shaped superconducting phase (Tc lesssim 31 K)appears.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Evolution from Non-Fermi to Fermi Liquid Transport Properties by Isovalent Doping in BaFe2(As1-xPx)2 Superconductors|S. Kasahara,T. Shibauchi,K. Hashimoto,K. Ikada,S. Tonegawa,R. Okazaki,H. Ikeda,H. Takeya,K. Hirata,T. Terashima,Y. Matsuda###
(958008, 958008)
 Bysubstituting isovalent P for As, the spin-density-wave (SD<missing VAR>W) state issuppressed and the dome-shaped superconducting phase (Tc lesssim 31 K)appears.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Evolution from Non-Fermi to Fermi Liquid Transport Properties by Isovalent Doping in BaFe2(As1-xPx)2 Superconductors|S. Kasahara,T. Shibauchi,K. Hashimoto,K. Ikada,S. Tonegawa,R. Okazaki,H. Ikeda,H. Takeya,K. Hirata,T. Terashima,Y. Matsuda###
(958010, 958010)
 Bysubstituting isovalent P for As, the spin-density-wave (SD<missing VAR>W) state issuppressed and the dome-shaped superconducting phase (Tc lesssim 31 K)appears.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Evolution from Non-Fermi to Fermi Liquid Transport Properties by Isovalent Doping in BaFe2(As1-xPx)2 Superconductors|S. Kasahara,T. Shibauchi,K. Hashimoto,K. Ikada,S. Tonegawa,R. Okazaki,H. Ikeda,H. Takeya,K. Hirata,T. Terashima,Y. Matsuda###
(958040, 958040)
 Bysubstituting isovalent P for As, the spin-density-wave (SD<missing VAR>W) state issuppressed and the dome-shaped superconducting phase (Tc lesssim 31 K)appears.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Evolution from Non-Fermi to Fermi Liquid Transport Properties by Isovalent Doping in BaFe2(As1-xPx)2 Superconductors|S. Kasahara,T. Shibauchi,K. Hashimoto,K. Ikada,S. Tonegawa,R. Okazaki,H. Ikeda,H. Takeya,K. Hirata,T. Terashima,Y. Matsuda###
(958051, 958051)
 Near the SD<missing VAR>W end point (x<missing VAR>approx0.3), we observe striking lineartemperature (T) dependence of resistivity in a wide T<missing VAR>-range, and remarkablelow-T<missing VAR> enhancement of Hall coefficient magnitude from the carrier numberestimates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Evolution from Non-Fermi to Fermi Liquid Transport Properties by Isovalent Doping in BaFe2(As1-xPx)2 Superconductors|S. Kasahara,T. Shibauchi,K. Hashimoto,K. Ikada,S. Tonegawa,R. Okazaki,H. Ikeda,H. Takeya,K. Hirata,T. Terashima,Y. Matsuda###
(958053, 958053)
 Near the SD<missing VAR>W end point (x<missing VAR>approx0.3), we observe striking lineartemperature (T) dependence of resistivity in a wide T<missing VAR>-range, and remarkablelow-T<missing VAR> enhancement of Hall coefficient magnitude from the carrier numberestimates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Evolution from Non-Fermi to Fermi Liquid Transport Properties by Isovalent Doping in BaFe2(As1-xPx)2 Superconductors|S. Kasahara,T. Shibauchi,K. Hashimoto,K. Ikada,S. Tonegawa,R. Okazaki,H. Ikeda,H. Takeya,K. Hirata,T. Terashima,Y. Matsuda###
(958170, 958170)
 We also find that the magnetoresistance apparently violates theKohlers<missing VAR> rule and is well scaled by the Hall angle ThetaH asDeltarhoxx/rhoxx propto tan2ThetaH.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Evolution from Non-Fermi to Fermi Liquid Transport Properties by Isovalent Doping in BaFe2(As1-xPx)2 Superconductors|S. Kasahara,T. Shibauchi,K. Hashimoto,K. Ikada,S. Tonegawa,R. Okazaki,H. Ikeda,H. Takeya,K. Hirata,T. Terashima,Y. Matsuda###
(958187, 958187)
 We also find that the magnetoresistance apparently violates theKohlers<missing VAR> rule and is well scaled by the Hall angle ThetaH asDeltarhoxx/rhoxx propto tan2ThetaH.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###The observation of a positive magnetoresistance and close correlation among lattice, spin and charge around TC in antipervoskite SnCMn3|B. S. Wang,P. Tong,Y. P. Sun,X. B. Zhu,W. H. Song,Z. R. Yang,J. M. Dai###
(958582, 958582)
The observation of a positive magnetoresistance and close correlation among lattice, spin and charge around T<missing VAR>C in antipervoskite SnCMn3.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 11, '%', 2],[88.0, 280, 'K', 2]

SnCMn3
###The observation of a positive magnetoresistance and close correlation among lattice, spin and charge around TC in antipervoskite SnCMn3|B. S. Wang,P. Tong,Y. P. Sun,X. B. Zhu,W. H. Song,Z. R. Yang,J. M. Dai###
(958588, 958591)
The observation of a positive magnetoresistance and close correlation among lattice, spin and charge around T<missing VAR>C in antipervoskite SnCMn3.
Featurization terminated normally.
0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 11, '%', 2],[79.0, 280, 'K', 2]

SnCMn3
###The observation of a positive magnetoresistance and close correlation among lattice, spin and charge around TC in antipervoskite SnCMn3|B. S. Wang,P. Tong,Y. P. Sun,X. B. Zhu,W. H. Song,Z. R. Yang,J. M. Dai###
(958625, 958628)
 The temperature dependences of magnetization, electrical transport, andthermal transport properties of antiperovskite compound SnCMn3 have beeninvestigated systematically.
Featurization terminated normally.
0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 11, '%', 1],[42.0, 280, 'K', 1]

C
###The observation of a positive magnetoresistance and close correlation among lattice, spin and charge around TC in antipervoskite SnCMn3|B. S. Wang,P. Tong,Y. P. Sun,X. B. Zhu,W. H. Song,Z. R. Yang,J. M. Dai###
(958668, 958668)
 A positive magnetoresistance (11%) is observedaround the ferrimagnetic-paramagnetic transition (T<missing VAR>C  280 K) in the field of50 k<missing VAR>Oe, which can be attributed to the field-induced magnetic phase transition.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 11, '%', 0],[2.0, 280, 'K', 0]

C
###The observation of a positive magnetoresistance and close correlation among lattice, spin and charge around TC in antipervoskite SnCMn3|B. S. Wang,P. Tong,Y. P. Sun,X. B. Zhu,W. H. Song,Z. R. Yang,J. M. Dai###
(958742, 958742)
The abnormalities of resistivity, Seebeck coefficient, normal Hall effect andthermal conductivity near T<missing VAR>C are suggested to be associated with an abruptreconstruction of electronic structure.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 11, '%', 1],[72.0, 280, 'K', 1]

C
###The observation of a positive magnetoresistance and close correlation among lattice, spin and charge around TC in antipervoskite SnCMn3|B. S. Wang,P. Tong,Y. P. Sun,X. B. Zhu,W. H. Song,Z. R. Yang,J. M. Dai###
(958807, 958807)
 Further, our results indicate anessential interaction among lattice, spin and charge degrees of freedom aroundT<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 11, '%', 2],[137.0, 280, 'K', 2]

Mn
###The observation of a positive magnetoresistance and close correlation among lattice, spin and charge around TC in antipervoskite SnCMn3|B. S. Wang,P. Tong,Y. P. Sun,X. B. Zhu,W. H. Song,Z. R. Yang,J. M. Dai###
(958849, 958849)
 Such an interaction among various degrees of freedom associated with suddenphase transition is suggested to be characteristic of Mn-based antiperovskitecompounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[202.0, 11, '%', 3],[179.0, 280, 'K', 3]

InAs
###Magnetotransport properties of individual InAs nanowires|Sajal Dhara,Hari S. Solanki,Vibhor Singh,Arjun Narayanan,Prajakta Chaudhari,Mahesh Gokhale,Arnab Bhattacharya,Mandar M. Deshmukh###
(958875, 958876)
Magnetotransport properties of individual InAs nanowires.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[187.0, 2.0, 'In', 4]

InAs
###Magnetotransport properties of individual InAs nanowires|Sajal Dhara,Hari S. Solanki,Vibhor Singh,Arjun Narayanan,Prajakta Chaudhari,Mahesh Gokhale,Arnab Bhattacharya,Mandar M. Deshmukh###
(958895, 958896)
 We probe the magnetotransport properties of individual InAs nanowires in afield effect transistor geometry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 2.0, 'In', 3]

In
###Magnetotransport properties of individual InAs nanowires|Sajal Dhara,Hari S. Solanki,Vibhor Singh,Arjun Narayanan,Prajakta Chaudhari,Mahesh Gokhale,Arnab Bhattacharya,Mandar M. Deshmukh###
(958914, 958914)
 In the low magnetic field regime we observemagnetoresistance that is well described by the weak localization (WL)description in diffusive conductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 2.0, 'In', 2]

W
###Magnetotransport properties of individual InAs nanowires|Sajal Dhara,Hari S. Solanki,Vibhor Singh,Arjun Narayanan,Prajakta Chaudhari,Mahesh Gokhale,Arnab Bhattacharya,Mandar M. Deshmukh###
(958950, 958950)
 In the low magnetic field regime we observemagnetoresistance that is well described by the weak localization (WL)description in diffusive conductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 2.0, 'In', 2]

W
###Magnetotransport properties of individual InAs nanowires|Sajal Dhara,Hari S. Solanki,Vibhor Singh,Arjun Narayanan,Prajakta Chaudhari,Mahesh Gokhale,Arnab Bhattacharya,Mandar M. Deshmukh###
(958986, 958986)
 The weak localization correction ismodified to weak anti-localization (WAL) as the gate voltage is increased.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 2.0, 'In', 1]

La2-xCe
###Evidence for Antiferromagnetic Order in La$_{2-x}$Ce$_{x}$CuO$_{4}$ from Angular Magnetoresistance Measurements|K. Jin,X. H. Zhang,P. Bach,R. L. Greene###
(959181, 959185)
Evidence for Antiferromagnetic Order in La2-xCex<missing VAR>CuO4 from Angular Magnetoresistance Measurements.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

CuO4
###Evidence for Antiferromagnetic Order in La$_{2-x}$Ce$_{x}$CuO$_{4}$ from Angular Magnetoresistance Measurements|K. Jin,X. H. Zhang,P. Bach,R. L. Greene###
(959187, 959189)
Evidence for Antiferromagnetic Order in La2-xCex<missing VAR>CuO4 from Angular Magnetoresistance Measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La2-xCe
###Evidence for Antiferromagnetic Order in La$_{2-x}$Ce$_{x}$CuO$_{4}$ from Angular Magnetoresistance Measurements|K. Jin,X. H. Zhang,P. Bach,R. L. Greene###
(959230, 959234)
 We investigated the in-plane angular magnetoresistivity (AMR) of %T<missing VAR>prime-phase La2-xCex<missing VAR>CuO4 (L<missing VAR>CCO) thin films (%x<missing VAR>0.06-0.15) fabricated by a pulsed laser deposition technique.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

CuO4
###Evidence for Antiferromagnetic Order in La$_{2-x}$Ce$_{x}$CuO$_{4}$ from Angular Magnetoresistance Measurements|K. Jin,X. H. Zhang,P. Bach,R. L. Greene###
(959236, 959238)
 We investigated the in-plane angular magnetoresistivity (AMR) of %T<missing VAR>prime-phase La2-xCex<missing VAR>CuO4 (L<missing VAR>CCO) thin films (%x<missing VAR>0.06-0.15) fabricated by a pulsed laser deposition technique.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Evidence for Antiferromagnetic Order in La$_{2-x}$Ce$_{x}$CuO$_{4}$ from Angular Magnetoresistance Measurements|K. Jin,X. H. Zhang,P. Bach,R. L. Greene###
(959244, 959244)
 We investigated the in-plane angular magnetoresistivity (AMR) of %T<missing VAR>prime-phase La2-xCex<missing VAR>CuO4 (L<missing VAR>CCO) thin films (%x<missing VAR>0.06-0.15) fabricated by a pulsed laser deposition technique.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Evidence for Antiferromagnetic Order in La$_{2-x}$Ce$_{x}$CuO$_{4}$ from Angular Magnetoresistance Measurements|K. Jin,X. H. Zhang,P. Bach,R. L. Greene###
(959290, 959290)
 The in-planeAMR with mathbfHparallel ab shows a twofold symmetry instead of thefourfold behavior found in other electron-doped cuprates such as Pr%2-xCexCuO4 and Nd2-xCex<missing VAR>CuO4.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pr
###Evidence for Antiferromagnetic Order in La$_{2-x}$Ce$_{x}$CuO$_{4}$ from Angular Magnetoresistance Measurements|K. Jin,X. H. Zhang,P. Bach,R. L. Greene###
(959330, 959330)
 The in-planeAMR with mathbfHparallel ab shows a twofold symmetry instead of thefourfold behavior found in other electron-doped cuprates such as Pr%2-xCexCuO4 and Nd2-xCex<missing VAR>CuO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CuO4
###Evidence for Antiferromagnetic Order in La$_{2-x}$Ce$_{x}$CuO$_{4}$ from Angular Magnetoresistance Measurements|K. Jin,X. H. Zhang,P. Bach,R. L. Greene###
(959339, 959341)
 The in-planeAMR with mathbfHparallel ab shows a twofold symmetry instead of thefourfold behavior found in other electron-doped cuprates such as Pr%2-xCexCuO4 and Nd2-xCex<missing VAR>CuO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nd2-xCe
###Evidence for Antiferromagnetic Order in La$_{2-x}$Ce$_{x}$CuO$_{4}$ from Angular Magnetoresistance Measurements|K. Jin,X. H. Zhang,P. Bach,R. L. Greene###
(959345, 959349)
 The in-planeAMR with mathbfHparallel ab shows a twofold symmetry instead of thefourfold behavior found in other electron-doped cuprates such as Pr%2-xCexCuO4 and Nd2-xCex<missing VAR>CuO4.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

CuO4
###Evidence for Antiferromagnetic Order in La$_{2-x}$Ce$_{x}$CuO$_{4}$ from Angular Magnetoresistance Measurements|K. Jin,X. H. Zhang,P. Bach,R. L. Greene###
(959351, 959353)
 The in-planeAMR with mathbfHparallel ab shows a twofold symmetry instead of thefourfold behavior found in other electron-doped cuprates such as Pr%2-xCexCuO4 and Nd2-xCex<missing VAR>CuO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Evidence for Antiferromagnetic Order in La$_{2-x}$Ce$_{x}$CuO$_{4}$ from Angular Magnetoresistance Measurements|K. Jin,X. H. Zhang,P. Bach,R. L. Greene###
(959411, 959411)
 The TD(x) is well aboveTc(x) for x<missing VAR>0.06 (sim 110 K), and decreases with increasing doping,until it is no longer observed above Tc(x) at x<missing VAR>0.15.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###Microscopic mechanism of the non-crystalline anisotropic magnetoresistance in (Ga,Mn)As|Karel Výborný,Jan Kucera,Jairo Sinova,A. W. Rushforth,B. L. Gallagher,T. Jungwirth###
(959523, 959523)
Microscopic mechanism of the non-crystalline anisotropic magnetoresistance in (Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Microscopic mechanism of the non-crystalline anisotropic magnetoresistance in (Ga,Mn)As|Karel Výborný,Jan Kucera,Jairo Sinova,A. W. Rushforth,B. L. Gallagher,T. Jungwirth###
(959525, 959525)
Microscopic mechanism of the non-crystalline anisotropic magnetoresistance in (Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Microscopic mechanism of the non-crystalline anisotropic magnetoresistance in (Ga,Mn)As|Karel Výborný,Jan Kucera,Jairo Sinova,A. W. Rushforth,B. L. Gallagher,T. Jungwirth###
(959527, 959527)
Microscopic mechanism of the non-crystalline anisotropic magnetoresistance in (Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Microscopic mechanism of the non-crystalline anisotropic magnetoresistance in (Ga,Mn)As|Karel Výborný,Jan Kucera,Jairo Sinova,A. W. Rushforth,B. L. Gallagher,T. Jungwirth###
(959588, 959588)
 Starting with a microscopic model based on the Kohn-Luttinger Hamiltonian andkinetic p-d exchange combined with Boltzmann formula for conductivity weidentify the scattering from magnetic Mn combined with the strong spin-orbitinteraction of the GaAs valence band as the dominant mechanism of theanisotropic magnetoresistance (AMR) in (Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Microscopic mechanism of the non-crystalline anisotropic magnetoresistance in (Ga,Mn)As|Karel Výborný,Jan Kucera,Jairo Sinova,A. W. Rushforth,B. L. Gallagher,T. Jungwirth###
(959609, 959610)
 Starting with a microscopic model based on the Kohn-Luttinger Hamiltonian andkinetic p-d exchange combined with Boltzmann formula for conductivity weidentify the scattering from magnetic Mn combined with the strong spin-orbitinteraction of the GaAs valence band as the dominant mechanism of theanisotropic magnetoresistance (AMR) in (Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###Microscopic mechanism of the non-crystalline anisotropic magnetoresistance in (Ga,Mn)As|Karel Výborný,Jan Kucera,Jairo Sinova,A. W. Rushforth,B. L. Gallagher,T. Jungwirth###
(959642, 959642)
 Starting with a microscopic model based on the Kohn-Luttinger Hamiltonian andkinetic p-d exchange combined with Boltzmann formula for conductivity weidentify the scattering from magnetic Mn combined with the strong spin-orbitinteraction of the GaAs valence band as the dominant mechanism of theanisotropic magnetoresistance (AMR) in (Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Microscopic mechanism of the non-crystalline anisotropic magnetoresistance in (Ga,Mn)As|Karel Výborný,Jan Kucera,Jairo Sinova,A. W. Rushforth,B. L. Gallagher,T. Jungwirth###
(959644, 959644)
 Starting with a microscopic model based on the Kohn-Luttinger Hamiltonian andkinetic p-d exchange combined with Boltzmann formula for conductivity weidentify the scattering from magnetic Mn combined with the strong spin-orbitinteraction of the GaAs valence band as the dominant mechanism of theanisotropic magnetoresistance (AMR) in (Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Microscopic mechanism of the non-crystalline anisotropic magnetoresistance in (Ga,Mn)As|Karel Výborný,Jan Kucera,Jairo Sinova,A. W. Rushforth,B. L. Gallagher,T. Jungwirth###
(959646, 959646)
 Starting with a microscopic model based on the Kohn-Luttinger Hamiltonian andkinetic p-d exchange combined with Boltzmann formula for conductivity weidentify the scattering from magnetic Mn combined with the strong spin-orbitinteraction of the GaAs valence band as the dominant mechanism of theanisotropic magnetoresistance (AMR) in (Ga,Mn)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Microscopic mechanism of the non-crystalline anisotropic magnetoresistance in (Ga,Mn)As|Karel Výborný,Jan Kucera,Jairo Sinova,A. W. Rushforth,B. L. Gallagher,T. Jungwirth###
(959711, 959711)
 This fact allows to constructa simple analytical model of the AMR consisting of two heavy-hole bands whosecharge carriers are scattered on the impurity potential of the Mn atoms.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Microscopic mechanism of the non-crystalline anisotropic magnetoresistance in (Ga,Mn)As|Karel Výborný,Jan Kucera,Jairo Sinova,A. W. Rushforth,B. L. Gallagher,T. Jungwirth###
(959804, 959804)
 Themodel predicts the correct sign of the AMR (resistivity parallel tomagnetization is smaller than perpendicular to magnetization) and identifiesits origin arising from the destructive interference between electric andmagnetic part of the scattering potential of magnetic ionized Mn acceptors whenthe carriers move parallel to the magnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(H3O)
###Indication for the coexistence of closed orbit and quantum interferometer with the same cross section in the organic metal (ET)4(H3O)[Fe(C2O4)3].C6H4Cl2: Persistence of SdH oscillations above 30 K|David Vignolles,Alain Audouard,Vladimir N. Laukhin,Enric Canadell,Tatyana G. Prokhorova,Eduard B. Yagubskii###
(959877, 959881)
Indication for the coexistence of closed orbit and quantum interferometer with the same cross section in the organic metal (ET)4(H3O)[Fe(C2O4)3].
Featurization successful!
0.75,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 30, 'K', 1],[129.0, 54, 'T', 2],[243.0, 6, 'K', 4],[269.0, 30, 'K', 5]

Bi
###Observation of Giant Positive Magnetoresistance in a Cooper Pair Insulator|H. Q. Nguyen,S. M. Hollen,M. D. Stewart Jr.,J. Shainline,Aijun Yin,J. M. Xu,J. M. Valles Jr###
(960242, 960242)
 Ultrathin amorphous Bi films, patterned with a nano-honeycomb array of holes,can exhibit an insulating phase with transport dominated by the incoherentmotion of Cooper pairs of electrons between localized states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La1-xCa
###Fingerprint of dynamical charge/spin correlations in the tunneling spectra of colossal magnetoresistive manganites|S. Seiro,Y. Fasano,I. Maggio-Aprile,E. Koller,R. Lortz,Ø. Fischer###
(960572, 960576)
 We present temperature-dependent scanning tunneling spectroscopy measurementson La1-xCaxMO3 (x<missing VAR>sim0.33) films with different degrees of biaxialstrain.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[263.0, 77, ',', 8]

O3
###Fingerprint of dynamical charge/spin correlations in the tunneling spectra of colossal magnetoresistive manganites|S. Seiro,Y. Fasano,I. Maggio-Aprile,E. Koller,R. Lortz,Ø. Fischer###
(960579, 960580)
 We present temperature-dependent scanning tunneling spectroscopy measurementson La1-xCaxMO3 (x<missing VAR>sim0.33) films with different degrees of biaxialstrain.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[259.0, 77, ',', 8]

I
###Fingerprint of dynamical charge/spin correlations in the tunneling spectra of colossal magnetoresistive manganites|S. Seiro,Y. Fasano,I. Maggio-Aprile,E. Koller,R. Lortz,Ø. Fischer###
(960650, 960650)
 A depletion in normalized conductance around the Fermi level isobserved both above and below the insulator-to-metal transition temperatureTMI, for weakly as well as highly-strained films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[189.0, 77, ',', 7]

I
###Fingerprint of dynamical charge/spin correlations in the tunneling spectra of colossal magnetoresistive manganites|S. Seiro,Y. Fasano,I. Maggio-Aprile,E. Koller,R. Lortz,Ø. Fischer###
(960724, 960724)
 The zero-bias conductance decreases oncooling in the insulating phase, reaches a minimum close to TMI andincreases on cooling in the metallic phase, following the trend of macroscopicconductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 77, ',', 5]

B
###Fingerprint of dynamical charge/spin correlations in the tunneling spectra of colossal magnetoresistive manganites|S. Seiro,Y. Fasano,I. Maggio-Aprile,E. Koller,R. Lortz,Ø. Fischer###
(960836, 960836)
 B textbf77, 214434 (2008)].
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 77, ',', 0]

Co2FeAl
###Synthetic antiferromagnet with Heusler alloy Co2FeAl ferromagnetic layers|X. G. Xu,D. L. Zhang,X. Q. Li,J. Bao,Y. Jiang###
(960868, 960871)
Synthetic antiferromagnet with Heusler alloy Co2FeAl ferromagnetic layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 0.45, 'nm', 2],[93.0, 150, 'oC', 2],[124.0, 425, 'emu', 3],[141.0, 4.3, 'Oe', 3],[156.0, 5257, 'Oe', 3]

Co2FeAl
###Synthetic antiferromagnet with Heusler alloy Co2FeAl ferromagnetic layers|X. G. Xu,D. L. Zhang,X. Q. Li,J. Bao,Y. Jiang###
(960882, 960885)
 Heusler alloy Co2FeAl was employed as ferromagnetic layers inCo2FeAl/Ru/Co2FeAl synthetic antiferromagnet structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 0.45, 'nm', 1],[79.0, 150, 'oC', 1],[110.0, 425, 'emu', 2],[127.0, 4.3, 'Oe', 2],[142.0, 5257, 'Oe', 2]

Co2FeAl/Ru/Co2FeAl
###Synthetic antiferromagnet with Heusler alloy Co2FeAl ferromagnetic layers|X. G. Xu,D. L. Zhang,X. Q. Li,J. Bao,Y. Jiang###
(960900, 960910)
 Heusler alloy Co2FeAl was employed as ferromagnetic layers inCo2FeAl/Ru/Co2FeAl synthetic antiferromagnet structures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[33.0, 0.45, 'nm', 1],[54.0, 150, 'oC', 1],[85.0, 425, 'emu', 2],[102.0, 4.3, 'Oe', 2],[117.0, 5257, 'Oe', 2]

Ru
###Synthetic antiferromagnet with Heusler alloy Co2FeAl ferromagnetic layers|X. G. Xu,D. L. Zhang,X. Q. Li,J. Bao,Y. Jiang###
(960938, 960938)
 The experimentalresults show that the structure with a Ru thickness of 0.45 nm takes onstrongly antiferromagnetic coupling, which maintains up to 150 oC annealing for1 hour.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 0.45, 'nm', 0],[26.0, 150, 'oC', 0],[57.0, 425, 'emu', 1],[74.0, 4.3, 'Oe', 1],[89.0, 5257, 'Oe', 1]

Hs
###Synthetic antiferromagnet with Heusler alloy Co2FeAl ferromagnetic layers|X. G. Xu,D. L. Zhang,X. Q. Li,J. Bao,Y. Jiang###
(961024, 961024)
 The structure has a very low saturation magnetization Ms of 425 emu/cc,a low switching field Hsw of 4.3 Oe and a high saturation field Hs of 5257 Oeat room temperature, which are favorable for application in ultrahigh densitymagnetic read heads or other magnetic memory devices.
EXCEPTION 3: IndexError for Hs
Co2FeAl
[81.0, 0.45, 'nm', 1],[60.0, 150, 'oC', 1],[29.0, 425, 'emu', 0],[12.0, 4.3, 'Oe', 0],[3.0, 5257, 'Oe', 0]

HgTe
###Aharonov-Bohm interference in topological insulator nanoribbons|Hailin Peng,Keji Lai,Desheng Kong,Stefan Meister,Yulin Chen,Xiao-Liang Qi,Shou-Cheng Zhang,Zhi-Xun Shen,Yi Cui###
(961629, 961630)
 The two-dimensionaltopological insulator phase was predicted in HgTe quantum wells and confirmedby transport measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Se3
###Aharonov-Bohm interference in topological insulator nanoribbons|Hailin Peng,Keji Lai,Desheng Kong,Stefan Meister,Yulin Chen,Xiao-Liang Qi,Shou-Cheng Zhang,Zhi-Xun Shen,Yi Cui###
(961651, 961654)
 Recently, Bi2Se3 and related materials have beenproposed as three-dimensional topological insulators with a single Dirac coneon the surface and verified by angle-resolved photoemission spectroscopyexperiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Se3
###Aharonov-Bohm interference in topological insulator nanoribbons|Hailin Peng,Keji Lai,Desheng Kong,Stefan Meister,Yulin Chen,Xiao-Liang Qi,Shou-Cheng Zhang,Zhi-Xun Shen,Yi Cui###
(961755, 961758)
 Here, we show unambiguous transport evidence of topologicalsurface states through periodic quantum interference effects in layeredsingle-crystalline Bi2Se3 nanoribbons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Effect of electron-electron scattering on magnetointersubband resistance oscillations of two-dimensional electrons in GaAs quantum wells|A. V. Goran,A. A. Bykov,A. I. Toropov,S. A. Vitkalov###
(961941, 961942)
Effect of electron-electron scattering on magnetointersubband resistance oscillations of two-dimensional electrons in GaAs quantum wells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 4.2, '<', 1]

K
###Effect of electron-electron scattering on magnetointersubband resistance oscillations of two-dimensional electrons in GaAs quantum wells|A. V. Goran,A. A. Bykov,A. I. Toropov,S. A. Vitkalov###
(961961, 961961)
 The low-temperature(4.2<T<missing VAR><12.5 K) magnetotransport (B<2 T) oftwo-dimensional electrons occupying two subbands (with energy E<missing VAR>1 and E<missing VAR>2)is investigated in GaAs single quantum well with AlAs/GaAs superlatticebarriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 4.2, '<', 0]

B
###Effect of electron-electron scattering on magnetointersubband resistance oscillations of two-dimensional electrons in GaAs quantum wells|A. V. Goran,A. A. Bykov,A. I. Toropov,S. A. Vitkalov###
(961967, 961967)
 The low-temperature(4.2<T<missing VAR><12.5 K) magnetotransport (B<2 T) oftwo-dimensional electrons occupying two subbands (with energy E<missing VAR>1 and E<missing VAR>2)is investigated in GaAs single quantum well with AlAs/GaAs superlatticebarriers.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 4.2, '<', 0]

GaAs
###Effect of electron-electron scattering on magnetointersubband resistance oscillations of two-dimensional electrons in GaAs quantum wells|A. V. Goran,A. A. Bykov,A. I. Toropov,S. A. Vitkalov###
(962010, 962011)
 The low-temperature(4.2<T<missing VAR><12.5 K) magnetotransport (B<2 T) oftwo-dimensional electrons occupying two subbands (with energy E<missing VAR>1 and E<missing VAR>2)is investigated in GaAs single quantum well with AlAs/GaAs superlatticebarriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 4.2, '<', 0]

AlAs/GaAs
###Effect of electron-electron scattering on magnetointersubband resistance oscillations of two-dimensional electrons in GaAs quantum wells|A. V. Goran,A. A. Bykov,A. I. Toropov,S. A. Vitkalov###
(962021, 962025)
 The low-temperature(4.2<T<missing VAR><12.5 K) magnetotransport (B<2 T) oftwo-dimensional electrons occupying two subbands (with energy E<missing VAR>1 and E<missing VAR>2)is investigated in GaAs single quantum well with AlAs/GaAs superlatticebarriers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[66.0, 4.2, '<', 0]

S
###Effect of electron-electron scattering on magnetointersubband resistance oscillations of two-dimensional electrons in GaAs quantum wells|A. V. Goran,A. A. Bykov,A. I. Toropov,S. A. Vitkalov###
(962065, 962065)
 Two series of Shubnikov-de Haas oscillations are found to beaccompanied by magnetointersubband (M<missing VAR>IS) oscillations, periodic in the inversemagnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 4.2, '<', 1]

IS
###Effect of electron-electron scattering on magnetointersubband resistance oscillations of two-dimensional electrons in GaAs quantum wells|A. V. Goran,A. A. Bykov,A. I. Toropov,S. A. Vitkalov###
(962094, 962095)
 The period of the M<missing VAR>IS oscillations obeys conditionDelta12(E<missing VAR>2-E<missing VAR>1)k<missing VAR> cdot hbar omegac<missing VAR>, where Delta12 is thesubband energy separation, omegac<missing VAR> is the cyclotron frequency, and k<missing VAR> isthe positive integer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 4.2, '<', 2]

At
###Effect of electron-electron scattering on magnetointersubband resistance oscillations of two-dimensional electrons in GaAs quantum wells|A. V. Goran,A. A. Bykov,A. I. Toropov,S. A. Vitkalov###
(962166, 962166)
 At T<missing VAR>4.2 K the oscillations manifest themselves up tok<missing VAR>100.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[211.0, 4.2, '<', 3]

K
###Effect of electron-electron scattering on magnetointersubband resistance oscillations of two-dimensional electrons in GaAs quantum wells|A. V. Goran,A. A. Bykov,A. I. Toropov,S. A. Vitkalov###
(962171, 962171)
 At T<missing VAR>4.2 K the oscillations manifest themselves up tok<missing VAR>100.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[216.0, 4.2, '<', 3]

Nd0.84Sr0.16CoO3
###Exchange bias effect and intragranular magnetoresistance in Nd$_{0.84}Sr_{0.16}CoO_3|M. Patra,S. Majumdar,S. Giri###
(962326, 962332)
Exchange bias effect and intragranular magnetoresistance in Nd0.84Sr0.16CoO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0.032,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16799999999999998,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nd0.84Sr0.16CoO3
###Exchange bias effect and intragranular magnetoresistance in Nd$_{0.84}Sr_{0.16}CoO_3|M. Patra,S. Majumdar,S. Giri###
(962369, 962375)
 Electrical transport properties as a function of magnetic field and time havebeen investigated in polycrystalline, Nd0.84Sr0.16CoO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0.032,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16799999999999998,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Exchange bias effect and intragranular magnetoresistance in Nd$_{0.84}Sr_{0.16}CoO_3|M. Patra,S. Majumdar,S. Giri###
(962389, 962389)
 A strongexchange bias (E<missing VAR>B) effect is observed associated with the fairly largeintragranular magnetoresistance (MR).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Exchange bias effect and intragranular magnetoresistance in Nd$_{0.84}Sr_{0.16}CoO_3|M. Patra,S. Majumdar,S. Giri###
(962422, 962422)
 The E<missing VAR>B effect observed in the MR curve iscompared with the E<missing VAR>B effect manifested in magnetic hysteresis loop.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Exchange bias effect and intragranular magnetoresistance in Nd$_{0.84}Sr_{0.16}CoO_3|M. Patra,S. Majumdar,S. Giri###
(962447, 962447)
 The E<missing VAR>B effect observed in the MR curve iscompared with the E<missing VAR>B effect manifested in magnetic hysteresis loop.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Exchange bias effect and intragranular magnetoresistance in Nd$_{0.84}Sr_{0.16}CoO_3|M. Patra,S. Majumdar,S. Giri###
(962479, 962479)
 Trainingeffect, described as the decrease of E<missing VAR>B effect when the sample is successivelyfield-cycled at a particular temperature, has been observed in the shift of theMR curve.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Exchange bias effect and intragranular magnetoresistance in Nd$_{0.84}Sr_{0.16}CoO_3|M. Patra,S. Majumdar,S. Giri###
(962552, 962552)
 The E<missing VAR>Beffect, MR and a considerable time dependence in MR are attributed to theintrinsic nanostructure giving rise to the varieties of magnetic interfaces inthe grain interior.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PrPd2Si2
###Magnetic properties of PrPd$_{2}$Si$_{2}$ and PrPt$_{2}$Si$_{2}$|V. K. Anand,Z. Hossain,C. Geibel###
(962629, 962633)
Magnetic properties of PrPd2Si2 and PrPt2Si2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 3, 'K', 2],[110.0, 2, 'K', 2]

PrPt2Si2
###Magnetic properties of PrPd$_{2}$Si$_{2}$ and PrPt$_{2}$Si$_{2}$|V. K. Anand,Z. Hossain,C. Geibel###
(962637, 962641)
Magnetic properties of PrPd2Si2 and PrPt2Si2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 3, 'K', 2],[102.0, 2, 'K', 2]

PrPd2Si2
###Magnetic properties of PrPd$_{2}$Si$_{2}$ and PrPt$_{2}$Si$_{2}$|V. K. Anand,Z. Hossain,C. Geibel###
(962663, 962667)
 We have investigated the two rare-earth intermetallic compoundsPrPd2Si2 and PrPt2Si2 by means of magnetization, electricalresistivity and heat capacity measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 3, 'K', 1],[76.0, 2, 'K', 1]

PrPt2Si2
###Magnetic properties of PrPd$_{2}$Si$_{2}$ and PrPt$_{2}$Si$_{2}$|V. K. Anand,Z. Hossain,C. Geibel###
(962671, 962675)
 We have investigated the two rare-earth intermetallic compoundsPrPd2Si2 and PrPt2Si2 by means of magnetization, electricalresistivity and heat capacity measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 3, 'K', 1],[68.0, 2, 'K', 1]

PrPd2Si2
###Magnetic properties of PrPd$_{2}$Si$_{2}$ and PrPt$_{2}$Si$_{2}$|V. K. Anand,Z. Hossain,C. Geibel###
(962702, 962706)
 While PrPd2Si2 exhibitsan antiferromagnetic ordering at 3 K, no magnetic ordering is observed inPrPt2Si2 down to 2 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 3, 'K', 0],[37.0, 2, 'K', 0]

PrPt2Si2
###Magnetic properties of PrPd$_{2}$Si$_{2}$ and PrPt$_{2}$Si$_{2}$|V. K. Anand,Z. Hossain,C. Geibel###
(962734, 962738)
 While PrPd2Si2 exhibitsan antiferromagnetic ordering at 3 K, no magnetic ordering is observed inPrPt2Si2 down to 2 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 3, 'K', 0],[5.0, 2, 'K', 0]

C
###Magnetic properties of PrPd$_{2}$Si$_{2}$ and PrPt$_{2}$Si$_{2}$|V. K. Anand,Z. Hossain,C. Geibel###
(962778, 962778)
 The different magnetic behaviors of these twocompounnds are due to different crystalline electric field (CE<missing VAR>F) level schemes.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 3, 'K', 1],[35.0, 2, 'K', 1]

F
###Magnetic properties of PrPd$_{2}$Si$_{2}$ and PrPt$_{2}$Si$_{2}$|V. K. Anand,Z. Hossain,C. Geibel###
(962780, 962780)
 The different magnetic behaviors of these twocompounnds are due to different crystalline electric field (CE<missing VAR>F) level schemes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 3, 'K', 1],[37.0, 2, 'K', 1]

PrPd2Si2
###Magnetic properties of PrPd$_{2}$Si$_{2}$ and PrPt$_{2}$Si$_{2}$|V. K. Anand,Z. Hossain,C. Geibel###
(962811, 962815)
The specific heat data suggest a quasi-quartet ground state in PrPd2Si2in contrast to a nonmagnetic singlet ground state in PrPt2Si2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 3, 'K', 2],[68.0, 2, 'K', 2]

PrPt2Si2
###Magnetic properties of PrPd$_{2}$Si$_{2}$ and PrPt$_{2}$Si$_{2}$|V. K. Anand,Z. Hossain,C. Geibel###
(962836, 962840)
The specific heat data suggest a quasi-quartet ground state in PrPd2Si2in contrast to a nonmagnetic singlet ground state in PrPt2Si2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 3, 'K', 2],[93.0, 2, 'K', 2]

ThCr2Si2
###Magnetic properties of PrPd$_{2}$Si$_{2}$ and PrPt$_{2}$Si$_{2}$|V. K. Anand,Z. Hossain,C. Geibel###
(962881, 962885)
 Thisdifference is attributed to the loss of a mirror plane upon changing thecrystal structure from the ThCr2Si2 type (PrPd2Si2) to theCaBe2Ge2 type (PrPt2Si2).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 3, 'K', 3],[138.0, 2, 'K', 3]

(PrPd2Si2)
###Magnetic properties of PrPd$_{2}$Si$_{2}$ and PrPt$_{2}$Si$_{2}$|V. K. Anand,Z. Hossain,C. Geibel###
(962889, 962895)
 Thisdifference is attributed to the loss of a mirror plane upon changing thecrystal structure from the ThCr2Si2 type (PrPd2Si2) to theCaBe2Ge2 type (PrPt2Si2).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[171.0, 3, 'K', 3],[146.0, 2, 'K', 3]

CaBe2Ge2
###Magnetic properties of PrPd$_{2}$Si$_{2}$ and PrPt$_{2}$Si$_{2}$|V. K. Anand,Z. Hossain,C. Geibel###
(962902, 962906)
 Thisdifference is attributed to the loss of a mirror plane upon changing thecrystal structure from the ThCr2Si2 type (PrPd2Si2) to theCaBe2Ge2 type (PrPt2Si2).
Featurization terminated normally.
0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[184.0, 3, 'K', 3],[159.0, 2, 'K', 3]

(PrPt2Si2)
###Magnetic properties of PrPd$_{2}$Si$_{2}$ and PrPt$_{2}$Si$_{2}$|V. K. Anand,Z. Hossain,C. Geibel###
(962910, 962916)
 Thisdifference is attributed to the loss of a mirror plane upon changing thecrystal structure from the ThCr2Si2 type (PrPd2Si2) to theCaBe2Ge2 type (PrPt2Si2).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[192.0, 3, 'K', 3],[167.0, 2, 'K', 3]

PrPd2Si2
###Magnetic properties of PrPd$_{2}$Si$_{2}$ and PrPt$_{2}$Si$_{2}$|V. K. Anand,Z. Hossain,C. Geibel###
(962949, 962953)
 Further on, a large magnetoresistance isalso observed in the magnetically ordered state of PrPd2Si2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[231.0, 3, 'K', 4],[206.0, 2, 'K', 4]

Sr3Fe2-xCo
###$A$-site substitution effect on physical properties of Sr$_3$Fe$_{2-x}$Co$_x$O$_{7-δ}$|J. Tozawa,M. Akaki,D. Akahoshi,H. Kuwahara,K. Itatani###
(963337, 963343)
A-site substitution effect on physical properties of Sr3Fe2-xCox<missing VAR>O7-.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

O7
###$A$-site substitution effect on physical properties of Sr$_3$Fe$_{2-x}$Co$_x$O$_{7-δ}$|J. Tozawa,M. Akaki,D. Akahoshi,H. Kuwahara,K. Itatani###
(963345, 963346)
A-site substitution effect on physical properties of Sr3Fe2-xCox<missing VAR>O7-.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr3Fe2-xCo
###$A$-site substitution effect on physical properties of Sr$_3$Fe$_{2-x}$Co$_x$O$_{7-δ}$|J. Tozawa,M. Akaki,D. Akahoshi,H. Kuwahara,K. Itatani###
(963385, 963391)
 We have investigated the Ln3-substitution (Ln  lanthanoid) effect ofa quasi two-dimensional ferromagnet Sr3Fe2-xCox<missing VAR>O7-delta (x<missing VAR> 0.5).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

O7
###$A$-site substitution effect on physical properties of Sr$_3$Fe$_{2-x}$Co$_x$O$_{7-δ}$|J. Tozawa,M. Akaki,D. Akahoshi,H. Kuwahara,K. Itatani###
(963393, 963394)
 We have investigated the Ln3-substitution (Ln  lanthanoid) effect ofa quasi two-dimensional ferromagnet Sr3Fe2-xCox<missing VAR>O7-delta (x<missing VAR> 0.5).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###$A$-site substitution effect on physical properties of Sr$_3$Fe$_{2-x}$Co$_x$O$_{7-δ}$|J. Tozawa,M. Akaki,D. Akahoshi,H. Kuwahara,K. Itatani###
(963479, 963479)
 With increasing Ln3-concentration, the ferromagnetismis gradually suppressed and the resistivity is increasing, which are ascribedto an increase in antiferromagnetic (AFM) clusters created byLn3-substitution.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###$A$-site substitution effect on physical properties of Sr$_3$Fe$_{2-x}$Co$_x$O$_{7-δ}$|J. Tozawa,M. Akaki,D. Akahoshi,H. Kuwahara,K. Itatani###
(963496, 963496)
 InSr2.7Gd0.3Fe1.5Co0.5O7-delta, the magnetoresistance(MR) is enhanced by about 20 % compared with that ofSr3Fe1.5Co0.5O7-delta.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr2.7Gd0.3Fe1.5Co0.5O7
###$A$-site substitution effect on physical properties of Sr$_3$Fe$_{2-x}$Co$_x$O$_{7-δ}$|J. Tozawa,M. Akaki,D. Akahoshi,H. Kuwahara,K. Itatani###
(963499, 963508)
 InSr2.7Gd0.3Fe1.5Co0.5O7-delta, the magnetoresistance(MR) is enhanced by about 20 % compared with that ofSr3Fe1.5Co0.5O7-delta.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0.041666666666666664,0,0,0,0,0,0,0,0,0,0,0.225,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.024999999999999998,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr3Fe1.5Co0.5O7
###$A$-site substitution effect on physical properties of Sr$_3$Fe$_{2-x}$Co$_x$O$_{7-δ}$|J. Tozawa,M. Akaki,D. Akahoshi,H. Kuwahara,K. Itatani###
(963544, 963551)
 InSr2.7Gd0.3Fe1.5Co0.5O7-delta, the magnetoresistance(MR) is enhanced by about 20 % compared with that ofSr3Fe1.5Co0.5O7-delta.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0.041666666666666664,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###$A$-site substitution effect on physical properties of Sr$_3$Fe$_{2-x}$Co$_x$O$_{7-δ}$|J. Tozawa,M. Akaki,D. Akahoshi,H. Kuwahara,K. Itatani###
(963563, 963563)
 Coexistence of ferromagnetic (FM) andAFM<missing VAR> phases is essential for the enhancement of the MR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###$A$-site substitution effect on physical properties of Sr$_3$Fe$_{2-x}$Co$_x$O$_{7-δ}$|J. Tozawa,M. Akaki,D. Akahoshi,H. Kuwahara,K. Itatani###
(963571, 963571)
 Coexistence of ferromagnetic (FM) andAFM<missing VAR> phases is essential for the enhancement of the MR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###$A$-site substitution effect on physical properties of Sr$_3$Fe$_{2-x}$Co$_x$O$_{7-δ}$|J. Tozawa,M. Akaki,D. Akahoshi,H. Kuwahara,K. Itatani###
(963605, 963605)
 Applied magneticfields align the FM<missing VAR> clusters in the same direction, resulting in a reduction inthe resistivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BaMn2O6
###$R$-site Randomness Effect in Double-Perovskite $R$BaMn$_{2}$O$_{6}$|Y. Miyauchi,S. Fukushima,J. Tozawa,M. Akaki,H. Kuwahara,D. Akahoshi###
(963696, 963700)
R<missing VAR>-site Randomness Effect in Double-Perovskite R<missing VAR>BaMn2O6.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 500, 'K', 2],[211.0, 0.6, ',', 3],[248.0, 0.8, ',', 4]

Ba
###$R$-site Randomness Effect in Double-Perovskite $R$BaMn$_{2}$O$_{6}$|Y. Miyauchi,S. Fukushima,J. Tozawa,M. Akaki,H. Kuwahara,D. Akahoshi###
(963723, 963723)
 We have investigated the R<missing VAR>-site randomness effect of R<missing VAR>/Ba-orderedR<missing VAR>BaMn2O6 (R<missing VAR>  rare earth) by using Y1-yLay<missing VAR>BaMn2O6(0 (leq) y<missing VAR> (leq) 1) in which R<missing VAR> (Y,La) and Ba are regularly arranged whileY and La randomly occupy the R<missing VAR>-site.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 500, 'K', 1],[188.0, 0.6, ',', 2],[225.0, 0.8, ',', 3]

BaMn2O6
###$R$-site Randomness Effect in Double-Perovskite $R$BaMn$_{2}$O$_{6}$|Y. Miyauchi,S. Fukushima,J. Tozawa,M. Akaki,H. Kuwahara,D. Akahoshi###
(963729, 963733)
 We have investigated the R<missing VAR>-site randomness effect of R<missing VAR>/Ba-orderedR<missing VAR>BaMn2O6 (R<missing VAR>  rare earth) by using Y1-yLay<missing VAR>BaMn2O6(0 (leq) y<missing VAR> (leq) 1) in which R<missing VAR> (Y,La) and Ba are regularly arranged whileY and La randomly occupy the R<missing VAR>-site.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 500, 'K', 1],[178.0, 0.6, ',', 2],[215.0, 0.8, ',', 3]

Y1-yLa
###$R$-site Randomness Effect in Double-Perovskite $R$BaMn$_{2}$O$_{6}$|Y. Miyauchi,S. Fukushima,J. Tozawa,M. Akaki,H. Kuwahara,D. Akahoshi###
(963748, 963752)
 We have investigated the R<missing VAR>-site randomness effect of R<missing VAR>/Ba-orderedR<missing VAR>BaMn2O6 (R<missing VAR>  rare earth) by using Y1-yLay<missing VAR>BaMn2O6(0 (leq) y<missing VAR> (leq) 1) in which R<missing VAR> (Y,La) and Ba are regularly arranged whileY and La randomly occupy the R<missing VAR>-site.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[105.0, 500, 'K', 1],[159.0, 0.6, ',', 2],[196.0, 0.8, ',', 3]

BaMn2O6
###$R$-site Randomness Effect in Double-Perovskite $R$BaMn$_{2}$O$_{6}$|Y. Miyauchi,S. Fukushima,J. Tozawa,M. Akaki,H. Kuwahara,D. Akahoshi###
(963754, 963758)
 We have investigated the R<missing VAR>-site randomness effect of R<missing VAR>/Ba-orderedR<missing VAR>BaMn2O6 (R<missing VAR>  rare earth) by using Y1-yLay<missing VAR>BaMn2O6(0 (leq) y<missing VAR> (leq) 1) in which R<missing VAR> (Y,La) and Ba are regularly arranged whileY and La randomly occupy the R<missing VAR>-site.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 500, 'K', 1],[153.0, 0.6, ',', 2],[190.0, 0.8, ',', 3]

Y
###$R$-site Randomness Effect in Double-Perovskite $R$BaMn$_{2}$O$_{6}$|Y. Miyauchi,S. Fukushima,J. Tozawa,M. Akaki,H. Kuwahara,D. Akahoshi###
(963784, 963784)
 We have investigated the R<missing VAR>-site randomness effect of R<missing VAR>/Ba-orderedR<missing VAR>BaMn2O6 (R<missing VAR>  rare earth) by using Y1-yLay<missing VAR>BaMn2O6(0 (leq) y<missing VAR> (leq) 1) in which R<missing VAR> (Y,La) and Ba are regularly arranged whileY and La randomly occupy the R<missing VAR>-site.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 500, 'K', 1],[127.0, 0.6, ',', 2],[164.0, 0.8, ',', 3]

La
###$R$-site Randomness Effect in Double-Perovskite $R$BaMn$_{2}$O$_{6}$|Y. Miyauchi,S. Fukushima,J. Tozawa,M. Akaki,H. Kuwahara,D. Akahoshi###
(963786, 963786)
 We have investigated the R<missing VAR>-site randomness effect of R<missing VAR>/Ba-orderedR<missing VAR>BaMn2O6 (R<missing VAR>  rare earth) by using Y1-yLay<missing VAR>BaMn2O6(0 (leq) y<missing VAR> (leq) 1) in which R<missing VAR> (Y,La) and Ba are regularly arranged whileY and La randomly occupy the R<missing VAR>-site.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 500, 'K', 1],[125.0, 0.6, ',', 2],[162.0, 0.8, ',', 3]

Ba
###$R$-site Randomness Effect in Double-Perovskite $R$BaMn$_{2}$O$_{6}$|Y. Miyauchi,S. Fukushima,J. Tozawa,M. Akaki,H. Kuwahara,D. Akahoshi###
(963791, 963791)
 We have investigated the R<missing VAR>-site randomness effect of R<missing VAR>/Ba-orderedR<missing VAR>BaMn2O6 (R<missing VAR>  rare earth) by using Y1-yLay<missing VAR>BaMn2O6(0 (leq) y<missing VAR> (leq) 1) in which R<missing VAR> (Y,La) and Ba are regularly arranged whileY and La randomly occupy the R<missing VAR>-site.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 500, 'K', 1],[120.0, 0.6, ',', 2],[157.0, 0.8, ',', 3]

Y
###$R$-site Randomness Effect in Double-Perovskite $R$BaMn$_{2}$O$_{6}$|Y. Miyauchi,S. Fukushima,J. Tozawa,M. Akaki,H. Kuwahara,D. Akahoshi###
(963802, 963802)
 We have investigated the R<missing VAR>-site randomness effect of R<missing VAR>/Ba-orderedR<missing VAR>BaMn2O6 (R<missing VAR>  rare earth) by using Y1-yLay<missing VAR>BaMn2O6(0 (leq) y<missing VAR> (leq) 1) in which R<missing VAR> (Y,La) and Ba are regularly arranged whileY and La randomly occupy the R<missing VAR>-site.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 500, 'K', 1],[109.0, 0.6, ',', 2],[146.0, 0.8, ',', 3]

La
###$R$-site Randomness Effect in Double-Perovskite $R$BaMn$_{2}$O$_{6}$|Y. Miyauchi,S. Fukushima,J. Tozawa,M. Akaki,H. Kuwahara,D. Akahoshi###
(963806, 963806)
 We have investigated the R<missing VAR>-site randomness effect of R<missing VAR>/Ba-orderedR<missing VAR>BaMn2O6 (R<missing VAR>  rare earth) by using Y1-yLay<missing VAR>BaMn2O6(0 (leq) y<missing VAR> (leq) 1) in which R<missing VAR> (Y,La) and Ba are regularly arranged whileY and La randomly occupy the R<missing VAR>-site.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 500, 'K', 1],[105.0, 0.6, ',', 2],[142.0, 0.8, ',', 3]

YBaMn2O6
###$R$-site Randomness Effect in Double-Perovskite $R$BaMn$_{2}$O$_{6}$|Y. Miyauchi,S. Fukushima,J. Tozawa,M. Akaki,H. Kuwahara,D. Akahoshi###
(963819, 963824)
 YBaMn2O6 (y<missing VAR>  0) undergoescharge/orbital ordering (CO) transition at T<missing VAR>rm CO  500 K whileLaBaMn2O6 (y<missing VAR>  1) shows ferromagnetic metallic (FM) behavior below350 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 500, 'K', 0],[87.0, 0.6, ',', 1],[124.0, 0.8, ',', 2]

(CO)
###$R$-site Randomness Effect in Double-Perovskite $R$BaMn$_{2}$O$_{6}$|Y. Miyauchi,S. Fukushima,J. Tozawa,M. Akaki,H. Kuwahara,D. Akahoshi###
(963842, 963845)
 YBaMn2O6 (y<missing VAR>  0) undergoescharge/orbital ordering (CO) transition at T<missing VAR>rm CO  500 K whileLaBaMn2O6 (y<missing VAR>  1) shows ferromagnetic metallic (FM) behavior below350 K.
Featurization successful!
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 500, 'K', 0],[66.0, 0.6, ',', 1],[103.0, 0.8, ',', 2]

CO
###$R$-site Randomness Effect in Double-Perovskite $R$BaMn$_{2}$O$_{6}$|Y. Miyauchi,S. Fukushima,J. Tozawa,M. Akaki,H. Kuwahara,D. Akahoshi###
(963854, 963855)
 YBaMn2O6 (y<missing VAR>  0) undergoescharge/orbital ordering (CO) transition at T<missing VAR>rm CO  500 K whileLaBaMn2O6 (y<missing VAR>  1) shows ferromagnetic metallic (FM) behavior below350 K.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 500, 'K', 0],[56.0, 0.6, ',', 1],[93.0, 0.8, ',', 2]

LaBaMn2O6
###$R$-site Randomness Effect in Double-Perovskite $R$BaMn$_{2}$O$_{6}$|Y. Miyauchi,S. Fukushima,J. Tozawa,M. Akaki,H. Kuwahara,D. Akahoshi###
(963862, 963867)
 YBaMn2O6 (y<missing VAR>  0) undergoescharge/orbital ordering (CO) transition at T<missing VAR>rm CO  500 K whileLaBaMn2O6 (y<missing VAR>  1) shows ferromagnetic metallic (FM) behavior below350 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 500, 'K', 0],[44.0, 0.6, ',', 1],[81.0, 0.8, ',', 2]

F
###$R$-site Randomness Effect in Double-Perovskite $R$BaMn$_{2}$O$_{6}$|Y. Miyauchi,S. Fukushima,J. Tozawa,M. Akaki,H. Kuwahara,D. Akahoshi###
(963883, 963883)
 YBaMn2O6 (y<missing VAR>  0) undergoescharge/orbital ordering (CO) transition at T<missing VAR>rm CO  500 K whileLaBaMn2O6 (y<missing VAR>  1) shows ferromagnetic metallic (FM) behavior below350 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 500, 'K', 0],[28.0, 0.6, ',', 1],[65.0, 0.8, ',', 2]

K
###$R$-site Randomness Effect in Double-Perovskite $R$BaMn$_{2}$O$_{6}$|Y. Miyauchi,S. Fukushima,J. Tozawa,M. Akaki,H. Kuwahara,D. Akahoshi###
(963894, 963894)
 YBaMn2O6 (y<missing VAR>  0) undergoescharge/orbital ordering (CO) transition at T<missing VAR>rm CO  500 K whileLaBaMn2O6 (y<missing VAR>  1) shows ferromagnetic metallic (FM) behavior below350 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 500, 'K', 0],[17.0, 0.6, ',', 1],[54.0, 0.8, ',', 2]

In
###$R$-site Randomness Effect in Double-Perovskite $R$BaMn$_{2}$O$_{6}$|Y. Miyauchi,S. Fukushima,J. Tozawa,M. Akaki,H. Kuwahara,D. Akahoshi###
(963897, 963897)
 In 0 (leq) y<missing VAR> (leq) 0.6, T<missing VAR>rm CO decreases with an increase iny<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 500, 'K', 1],[14.0, 0.6, ',', 0],[51.0, 0.8, ',', 1]

CO
###$R$-site Randomness Effect in Double-Perovskite $R$BaMn$_{2}$O$_{6}$|Y. Miyauchi,S. Fukushima,J. Tozawa,M. Akaki,H. Kuwahara,D. Akahoshi###
(963917, 963918)
 In 0 (leq) y<missing VAR> (leq) 0.6, T<missing VAR>rm CO decreases with an increase iny<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 500, 'K', 1],[6.0, 0.6, ',', 0],[30.0, 0.8, ',', 1]

In
###$R$-site Randomness Effect in Double-Perovskite $R$BaMn$_{2}$O$_{6}$|Y. Miyauchi,S. Fukushima,J. Tozawa,M. Akaki,H. Kuwahara,D. Akahoshi###
(963934, 963934)
 In 0.6 (leq) y<missing VAR> (leq) 0.8, R<missing VAR>-site randomness causes strong phaseseparation tendencies among the FM<missing VAR>, antiferromagnetic (AFM), and CO insulating(COI) states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 500, 'K', 2],[23.0, 0.6, ',', 1],[14.0, 0.8, ',', 0]

F
###$R$-site Randomness Effect in Double-Perovskite $R$BaMn$_{2}$O$_{6}$|Y. Miyauchi,S. Fukushima,J. Tozawa,M. Akaki,H. Kuwahara,D. Akahoshi###
(963972, 963972)
 In 0.6 (leq) y<missing VAR> (leq) 0.8, R<missing VAR>-site randomness causes strong phaseseparation tendencies among the FM<missing VAR>, antiferromagnetic (AFM), and CO insulating(COI) states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 500, 'K', 2],[61.0, 0.6, ',', 1],[24.0, 0.8, ',', 0]

F
###$R$-site Randomness Effect in Double-Perovskite $R$BaMn$_{2}$O$_{6}$|Y. Miyauchi,S. Fukushima,J. Tozawa,M. Akaki,H. Kuwahara,D. Akahoshi###
(963980, 963980)
 In 0.6 (leq) y<missing VAR> (leq) 0.8, R<missing VAR>-site randomness causes strong phaseseparation tendencies among the FM<missing VAR>, antiferromagnetic (AFM), and CO insulating(COI) states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 500, 'K', 2],[69.0, 0.6, ',', 1],[32.0, 0.8, ',', 0]

CO
###$R$-site Randomness Effect in Double-Perovskite $R$BaMn$_{2}$O$_{6}$|Y. Miyauchi,S. Fukushima,J. Tozawa,M. Akaki,H. Kuwahara,D. Akahoshi###
(963987, 963988)
 In 0.6 (leq) y<missing VAR> (leq) 0.8, R<missing VAR>-site randomness causes strong phaseseparation tendencies among the FM<missing VAR>, antiferromagnetic (AFM), and CO insulating(COI) states.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 500, 'K', 2],[76.0, 0.6, ',', 1],[39.0, 0.8, ',', 0]

(COI)
###$R$-site Randomness Effect in Double-Perovskite $R$BaMn$_{2}$O$_{6}$|Y. Miyauchi,S. Fukushima,J. Tozawa,M. Akaki,H. Kuwahara,D. Akahoshi###
(963993, 963997)
 In 0.6 (leq) y<missing VAR> (leq) 0.8, R<missing VAR>-site randomness causes strong phaseseparation tendencies among the FM<missing VAR>, antiferromagnetic (AFM), and CO insulating(COI) states.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 500, 'K', 2],[82.0, 0.6, ',', 1],[45.0, 0.8, ',', 0]

C
###Electric Pulse Induced Resistive Switching, Electronic Phase Separation, and Possible Superconductivity in a Mott insulator|C. Vaju,L. Cario,B. Corraze,E. Janod,V. Dubost,T. Cren,D. Roditchev,D. Braithwaite,O. Chauvet###
(964110, 964110)
 Metal-insulator transitions (MIT) belong to a class of fascinating physicalphenomena, which includes superconductivity, and colossal magnetoresistance(CMR), that are associated with drastic modifications of electrical resistance.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Electric Pulse Induced Resistive Switching, Electronic Phase Separation, and Possible Superconductivity in a Mott insulator|C. Vaju,L. Cario,B. Corraze,E. Janod,V. Dubost,T. Cren,D. Roditchev,D. Braithwaite,O. Chauvet###
(964136, 964136)
In transition metal compounds, MIT are often related to the presence of strongelectronic correlations that drive the system into a Mott insulator state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Electric Pulse Induced Resistive Switching, Electronic Phase Separation, and Possible Superconductivity in a Mott insulator|C. Vaju,L. Cario,B. Corraze,E. Janod,V. Dubost,T. Cren,D. Roditchev,D. Braithwaite,O. Chauvet###
(964189, 964189)
 Inthese systems the MIT is usually tuned by electron doping or by applying anexternal pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaTa4Se8
###Electric Pulse Induced Resistive Switching, Electronic Phase Separation, and Possible Superconductivity in a Mott insulator|C. Vaju,L. Cario,B. Corraze,E. Janod,V. Dubost,T. Cren,D. Roditchev,D. Braithwaite,O. Chauvet###
(964328, 964332)
 Wereport here the first experimental evidence of a non-volatileelectric-pulse-induced insulator-to-metal transition and possiblesuperconductivity in the Mott insulator GaTa4Se8.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0.6153846153846154,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3076923076923077,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Electric Pulse Induced Resistive Switching, Electronic Phase Separation, and Possible Superconductivity in a Mott insulator|C. Vaju,L. Cario,B. Corraze,E. Janod,V. Dubost,T. Cren,D. Roditchev,D. Braithwaite,O. Chauvet###
(964391, 964391)
 Our Scanning TunnelingMicroscopy experiments show that this unconventional response of the system toshort electric pulses arises from a nanometer scale Electronic Phase Separation(E<missing VAR>PS) generated in the bulk material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La2CuO4
###Large Positive Magnetoresistance of the Lightly Doped La_{2}CuO_{4} Mott Insulator|I. Raicevic,Dragana Popovic,C. Panagopoulos,T. Sasagawa###
(964427, 964431)
Large Positive Magnetoresistance of the Lightly Doped La2CuO4 Mott Insulator.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La2CuO4
###Large Positive Magnetoresistance of the Lightly Doped La_{2}CuO_{4} Mott Insulator|I. Raicevic,Dragana Popovic,C. Panagopoulos,T. Sasagawa###
(964468, 964472)
 The in-plane and out-of-plane magnetoresistance (MR) of single crystals ofLa2CuO4, lightly doped (x<missing VAR>0.03) with either Sr (La2-xSrx<missing VAR>CuO4) or Li(La2Cu1-xLix<missing VAR>O4), have been measured in the fields applied parallel andperpendicular to the CuO2 planes.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr
###Large Positive Magnetoresistance of the Lightly Doped La_{2}CuO_{4} Mott Insulator|I. Raicevic,Dragana Popovic,C. Panagopoulos,T. Sasagawa###
(964488, 964488)
 The in-plane and out-of-plane magnetoresistance (MR) of single crystals ofLa2CuO4, lightly doped (x<missing VAR>0.03) with either Sr (La2-xSrx<missing VAR>CuO4) or Li(La2Cu1-xLix<missing VAR>O4), have been measured in the fields applied parallel andperpendicular to the CuO2 planes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La2-xSr
###Large Positive Magnetoresistance of the Lightly Doped La_{2}CuO_{4} Mott Insulator|I. Raicevic,Dragana Popovic,C. Panagopoulos,T. Sasagawa###
(964491, 964495)
 The in-plane and out-of-plane magnetoresistance (MR) of single crystals ofLa2CuO4, lightly doped (x<missing VAR>0.03) with either Sr (La2-xSrx<missing VAR>CuO4) or Li(La2Cu1-xLix<missing VAR>O4), have been measured in the fields applied parallel andperpendicular to the CuO2 planes.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

O4
###Large Positive Magnetoresistance of the Lightly Doped La_{2}CuO_{4} Mott Insulator|I. Raicevic,Dragana Popovic,C. Panagopoulos,T. Sasagawa###
(964498, 964499)
 The in-plane and out-of-plane magnetoresistance (MR) of single crystals ofLa2CuO4, lightly doped (x<missing VAR>0.03) with either Sr (La2-xSrx<missing VAR>CuO4) or Li(La2Cu1-xLix<missing VAR>O4), have been measured in the fields applied parallel andperpendicular to the CuO2 planes.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Li
###Large Positive Magnetoresistance of the Lightly Doped La_{2}CuO_{4} Mott Insulator|I. Raicevic,Dragana Popovic,C. Panagopoulos,T. Sasagawa###
(964504, 964504)
 The in-plane and out-of-plane magnetoresistance (MR) of single crystals ofLa2CuO4, lightly doped (x<missing VAR>0.03) with either Sr (La2-xSrx<missing VAR>CuO4) or Li(La2Cu1-xLix<missing VAR>O4), have been measured in the fields applied parallel andperpendicular to the CuO2 planes.
Featurization terminated normally.
0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La2Cu1-xLi
###Large Positive Magnetoresistance of the Lightly Doped La_{2}CuO_{4} Mott Insulator|I. Raicevic,Dragana Popovic,C. Panagopoulos,T. Sasagawa###
(964508, 964514)
 The in-plane and out-of-plane magnetoresistance (MR) of single crystals ofLa2CuO4, lightly doped (x<missing VAR>0.03) with either Sr (La2-xSrx<missing VAR>CuO4) or Li(La2Cu1-xLix<missing VAR>O4), have been measured in the fields applied parallel andperpendicular to the CuO2 planes.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

O4
###Large Positive Magnetoresistance of the Lightly Doped La_{2}CuO_{4} Mott Insulator|I. Raicevic,Dragana Popovic,C. Panagopoulos,T. Sasagawa###
(964516, 964517)
 The in-plane and out-of-plane magnetoresistance (MR) of single crystals ofLa2CuO4, lightly doped (x<missing VAR>0.03) with either Sr (La2-xSrx<missing VAR>CuO4) or Li(La2Cu1-xLix<missing VAR>O4), have been measured in the fields applied parallel andperpendicular to the CuO2 planes.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CuO2
###Large Positive Magnetoresistance of the Lightly Doped La_{2}CuO_{4} Mott Insulator|I. Raicevic,Dragana Popovic,C. Panagopoulos,T. Sasagawa###
(964546, 964548)
 The in-plane and out-of-plane magnetoresistance (MR) of single crystals ofLa2CuO4, lightly doped (x<missing VAR>0.03) with either Sr (La2-xSrx<missing VAR>CuO4) or Li(La2Cu1-xLix<missing VAR>O4), have been measured in the fields applied parallel andperpendicular to the CuO2 planes.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La1.97Sr0.03CuO4
###Large Positive Magnetoresistance of the Lightly Doped La_{2}CuO_{4} Mott Insulator|I. Raicevic,Dragana Popovic,C. Panagopoulos,T. Sasagawa###
(964555, 964561)
 Both La1.97Sr0.03CuO4 andLa2Cu0.97Li0.03O4 exhibit the emergence of a positive MR attemperatures (T) well below the spin glass (SG) transition temperature T<missing VAR>sg,where charge dynamics is also glassy.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0.004285714285714286,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2814285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La2Cu0.97Li0.03O4
###Large Positive Magnetoresistance of the Lightly Doped La_{2}CuO_{4} Mott Insulator|I. Raicevic,Dragana Popovic,C. Panagopoulos,T. Sasagawa###
(964566, 964573)
 Both La1.97Sr0.03CuO4 andLa2Cu0.97Li0.03O4 exhibit the emergence of a positive MR attemperatures (T) well below the spin glass (SG) transition temperature T<missing VAR>sg,where charge dynamics is also glassy.
Featurization terminated normally.
0,0,0.004285714285714286,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Large Positive Magnetoresistance of the Lightly Doped La_{2}CuO_{4} Mott Insulator|I. Raicevic,Dragana Popovic,C. Panagopoulos,T. Sasagawa###
(964610, 964610)
 Both La1.97Sr0.03CuO4 andLa2Cu0.97Li0.03O4 exhibit the emergence of a positive MR attemperatures (T) well below the spin glass (SG) transition temperature T<missing VAR>sg,where charge dynamics is also glassy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Large Positive Magnetoresistance of the Lightly Doped La_{2}CuO_{4} Mott Insulator|I. Raicevic,Dragana Popovic,C. Panagopoulos,T. Sasagawa###
(964664, 964664)
 In this regime, the in-plane resistance R<missing VAR>ab(T<missing VAR>,B) isdescribed by a scaling function, suggesting that short-range Coulomb repulsionbetween two holes in the same disorder-localized state plays a key role at lowT<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Large Positive Magnetoresistance of the Lightly Doped La_{2}CuO_{4} Mott Insulator|I. Raicevic,Dragana Popovic,C. Panagopoulos,T. Sasagawa###
(964684, 964684)
 In this regime, the in-plane resistance R<missing VAR>ab(T<missing VAR>,B) isdescribed by a scaling function, suggesting that short-range Coulomb repulsionbetween two holes in the same disorder-localized state plays a key role at lowT<missing VAR>.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Ballistic quantum spin Hall state and enhanced edge backscattering in strong magnetic fields|G. Tkachov,E. M. Hankiewicz###
(964833, 964833)
 The quantum spin Hall (Q<missing VAR>SH) state, observed in a zero magnetic field in HgTequantum wells, respects the time-reversal symmetry and is distinct from quantumHall (Q<missing VAR>H) states.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HgTe
###Ballistic quantum spin Hall state and enhanced edge backscattering in strong magnetic fields|G. Tkachov,E. M. Hankiewicz###
(964853, 964854)
 The quantum spin Hall (Q<missing VAR>SH) state, observed in a zero magnetic field in HgTequantum wells, respects the time-reversal symmetry and is distinct from quantumHall (Q<missing VAR>H) states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Ballistic quantum spin Hall state and enhanced edge backscattering in strong magnetic fields|G. Tkachov,E. M. Hankiewicz###
(964887, 964887)
 The quantum spin Hall (Q<missing VAR>SH) state, observed in a zero magnetic field in HgTequantum wells, respects the time-reversal symmetry and is distinct from quantumHall (Q<missing VAR>H) states.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SH
###Ballistic quantum spin Hall state and enhanced edge backscattering in strong magnetic fields|G. Tkachov,E. M. Hankiewicz###
(964902, 964903)
 We show that the Q<missing VAR>SH state persists in strong quantizingfields and is identified by counter-propagating (helical) edge channels withnonlinear dispersion inside the band gap.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SH
###Ballistic quantum spin Hall state and enhanced edge backscattering in strong magnetic fields|G. Tkachov,E. M. Hankiewicz###
(964998, 964999)
 If the Fermi level is shifted intothe Landau-quantized conduction or valence band, we find a transition betweenthe Q<missing VAR>SH and Q<missing VAR>H regimes.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Ballistic quantum spin Hall state and enhanced edge backscattering in strong magnetic fields|G. Tkachov,E. M. Hankiewicz###
(965004, 965004)
 If the Fermi level is shifted intothe Landau-quantized conduction or valence band, we find a transition betweenthe Q<missing VAR>SH and Q<missing VAR>H regimes.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B2N
###Ballistic quantum spin Hall state and enhanced edge backscattering in strong magnetic fields|G. Tkachov,E. M. Hankiewicz###
(965077, 965079)
 It shows a power-law decay1/B2N with magnetic field B, determined by the number of backscatterers on theedge, N.
Featurization terminated normally.
0,0,0,0,0.6666666666666666,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Ballistic quantum spin Hall state and enhanced edge backscattering in strong magnetic fields|G. Tkachov,E. M. Hankiewicz###
(965087, 965087)
 It shows a power-law decay1/B2N with magnetic field B, determined by the number of backscatterers on theedge, N.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Ballistic quantum spin Hall state and enhanced edge backscattering in strong magnetic fields|G. Tkachov,E. M. Hankiewicz###
(965110, 965110)
 It shows a power-law decay1/B2N with magnetic field B, determined by the number of backscatterers on theedge, N.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SH
###Ballistic quantum spin Hall state and enhanced edge backscattering in strong magnetic fields|G. Tkachov,E. M. Hankiewicz###
(965147, 965148)
 This suggests a rather simple and practical way to probe the qualityof recently realized quasiballistic Q<missing VAR>SH devices using magnetoresistancemeasurements.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Non-monotonic Fermi surface evolution and its correlation with stripe ordering in bilayer manganites|Z. Sun,Q. Wang,J. F. Douglas,Y. -D. Chuang,A. V. Fedorov,E. Rotenberg,H. Lin,S. Sahrakorpi,B. Barbiellini,R. S. Markiewicz,A. Bansil,H. Zheng,J. F. Mitchell,D. S. Dessau###
(965197, 965197)
 In correlated electron systems such as cuprate superconductors and colossalmagnetoresistive (CMR) oxides there is often a tendency for a nanoscaleself-organization of electrons that can give rise to exotic properties and toextreme non-linear responses.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Non-monotonic Fermi surface evolution and its correlation with stripe ordering in bilayer manganites|Z. Sun,Q. Wang,J. F. Douglas,Y. -D. Chuang,A. V. Fedorov,E. Rotenberg,H. Lin,S. Sahrakorpi,B. Barbiellini,R. S. Markiewicz,A. Bansil,H. Zheng,J. F. Mitchell,D. S. Dessau###
(965221, 965221)
 In correlated electron systems such as cuprate superconductors and colossalmagnetoresistive (CMR) oxides there is often a tendency for a nanoscaleself-organization of electrons that can give rise to exotic properties and toextreme non-linear responses.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Non-monotonic Fermi surface evolution and its correlation with stripe ordering in bilayer manganites|Z. Sun,Q. Wang,J. F. Douglas,Y. -D. Chuang,A. V. Fedorov,E. Rotenberg,H. Lin,S. Sahrakorpi,B. Barbiellini,R. S. Markiewicz,A. Bansil,H. Zheng,J. F. Mitchell,D. S. Dessau###
(965309, 965309)
 The driving mechanisms for this self-organizationare highly debated, especially in the CMR oxides in which two types ofself-organized stripes of charge and orbital order coexist with each other.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Interplay among spin, orbital effects and localization in a GaAs two-dimensional electron gas in a strong in-plane magnetic field|B. A. Piot,D. K. Maude,U. Gennser,A. Cavanna,D. Mailly###
(965557, 965558)
Interplay among spin, orbital effects and localization in a GaAs two-dimensional electron gas in a strong in-plane magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 32, 'T', 1],[120.0, 20, 'T', 2],[288.0, 2, 'D', 4]

GaAs
###Interplay among spin, orbital effects and localization in a GaAs two-dimensional electron gas in a strong in-plane magnetic field|B. A. Piot,D. K. Maude,U. Gennser,A. Cavanna,D. Mailly###
(965600, 965601)
 The magnetoresistance of a low carrier density, disordered GaAs basedtwo-dimensional (2D) electron gas has been measured in parallel magnetic fieldsup to 32 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 32, 'T', 0],[77.0, 20, 'T', 1],[245.0, 2, 'D', 3]

(N)
###Quantifying spin Hall angles from spin pumping: Experiments and Theory|O. Mosendz,J. E. Pearson,F. Y. Fradin,G. E. W. Bauer,S. D. Bader,A. Hoffmann###
(965970, 965972)
 We show how spin Hall effects can bequantified by integrating permalloy/normal metal (N) bilayers into a coplanarwaveguide.
Featurization successful!
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Quantifying spin Hall angles from spin pumping: Experiments and Theory|O. Mosendz,J. E. Pearson,F. Y. Fradin,G. E. W. Bauer,S. D. Bader,A. Hoffmann###
(965996, 965996)
 A dc spin current in N can be generated by spin pumping in acontrollable way by ferromagnetic resonance.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Quantifying spin Hall angles from spin pumping: Experiments and Theory|O. Mosendz,J. E. Pearson,F. Y. Fradin,G. E. W. Bauer,S. D. Bader,A. Hoffmann###
(966043, 966043)
 The transverse dc voltage detectedalong the permalloy/N has contributions from both the anisotropicmagnetoresistance (AMR) and the spin Hall effect, which can be distinguished bytheir symmetries.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Quantifying spin Hall angles from spin pumping: Experiments and Theory|O. Mosendz,J. E. Pearson,F. Y. Fradin,G. E. W. Bauer,S. D. Bader,A. Hoffmann###
(966110, 966110)
 In this way, wedetermine the spin Hall angle quantitatively for Pt, Au and Mo.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Quantifying spin Hall angles from spin pumping: Experiments and Theory|O. Mosendz,J. E. Pearson,F. Y. Fradin,G. E. W. Bauer,S. D. Bader,A. Hoffmann###
(966134, 966134)
 In this way, wedetermine the spin Hall angle quantitatively for Pt, Au and Mo.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Au
###Quantifying spin Hall angles from spin pumping: Experiments and Theory|O. Mosendz,J. E. Pearson,F. Y. Fradin,G. E. W. Bauer,S. D. Bader,A. Hoffmann###
(966137, 966137)
 In this way, wedetermine the spin Hall angle quantitatively for Pt, Au and Mo.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mo
###Quantifying spin Hall angles from spin pumping: Experiments and Theory|O. Mosendz,J. E. Pearson,F. Y. Fradin,G. E. W. Bauer,S. D. Bader,A. Hoffmann###
(966141, 966141)
 In this way, wedetermine the spin Hall angle quantitatively for Pt, Au and Mo.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CN
###Multiple Localized States and Magnetic Orderings in Partially Open Zigzag Carbon Nanotube Superlattices: An Ab Initio Study|Bing Huang,Zuanyi Li,Young-Woo Son,Gunn Kim,Wenhui Duan,Jisoon Ihm###
(966261, 966262)
 Using first-principles calculations, we examine the electronic and magneticproperties of partially open zigzag carbon nanotube (CNT) superlattices.
Featurization terminated normally.
0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 100, '%', 3]

CN
###Multiple Localized States and Magnetic Orderings in Partially Open Zigzag Carbon Nanotube Superlattices: An Ab Initio Study|Bing Huang,Zuanyi Li,Young-Woo Son,Gunn Kim,Wenhui Duan,Jisoon Ihm###
(966378, 966379)
 We demonstrate that, as a proof of principle, somepartially open zigzag CNT<missing VAR> superlattices are by themselves giant (100%)magnetoresistive devices.
Featurization terminated normally.
0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 100, '%', 0]

Ga
###Strain, magnetic anisotropy, and anisotropic magnetoresistance in (Ga,Mn)As on high-index substrates: application to (113)A-oriented layers|L. Dreher,D. Donhauser,J. Daeubler,M. Glunk,C. Rapp,W. Schoch,R. Sauer,W. Limmer###
(966572, 966572)
Strain, magnetic anisotropy, and anisotropic magnetoresistance in (Ga,Mn)As on high-index substrates application to (113)A-oriented layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[316.0, 4.2, 'K', 3]

Mn
###Strain, magnetic anisotropy, and anisotropic magnetoresistance in (Ga,Mn)As on high-index substrates: application to (113)A-oriented layers|L. Dreher,D. Donhauser,J. Daeubler,M. Glunk,C. Rapp,W. Schoch,R. Sauer,W. Limmer###
(966574, 966574)
Strain, magnetic anisotropy, and anisotropic magnetoresistance in (Ga,Mn)As on high-index substrates application to (113)A-oriented layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[314.0, 4.2, 'K', 3]

As
###Strain, magnetic anisotropy, and anisotropic magnetoresistance in (Ga,Mn)As on high-index substrates: application to (113)A-oriented layers|L. Dreher,D. Donhauser,J. Daeubler,M. Glunk,C. Rapp,W. Schoch,R. Sauer,W. Limmer###
(966576, 966576)
Strain, magnetic anisotropy, and anisotropic magnetoresistance in (Ga,Mn)As on high-index substrates application to (113)A-oriented layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[312.0, 4.2, 'K', 3]

Ga
###Strain, magnetic anisotropy, and anisotropic magnetoresistance in (Ga,Mn)As on high-index substrates: application to (113)A-oriented layers|L. Dreher,D. Donhauser,J. Daeubler,M. Glunk,C. Rapp,W. Schoch,R. Sauer,W. Limmer###
(966679, 966679)
 Based on a detailed theoretical examination of the lattice distortion inhigh-index epilayers in terms of continuum mechanics, expressions are deducedthat allow the calculation and experimental determination of the strain tensorfor (hhl)-oriented (Ga,Mn)As layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[209.0, 4.2, 'K', 2]

Mn
###Strain, magnetic anisotropy, and anisotropic magnetoresistance in (Ga,Mn)As on high-index substrates: application to (113)A-oriented layers|L. Dreher,D. Donhauser,J. Daeubler,M. Glunk,C. Rapp,W. Schoch,R. Sauer,W. Limmer###
(966681, 966681)
 Based on a detailed theoretical examination of the lattice distortion inhigh-index epilayers in terms of continuum mechanics, expressions are deducedthat allow the calculation and experimental determination of the strain tensorfor (hhl)-oriented (Ga,Mn)As layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[207.0, 4.2, 'K', 2]

As
###Strain, magnetic anisotropy, and anisotropic magnetoresistance in (Ga,Mn)As on high-index substrates: application to (113)A-oriented layers|L. Dreher,D. Donhauser,J. Daeubler,M. Glunk,C. Rapp,W. Schoch,R. Sauer,W. Limmer###
(966683, 966683)
 Based on a detailed theoretical examination of the lattice distortion inhigh-index epilayers in terms of continuum mechanics, expressions are deducedthat allow the calculation and experimental determination of the strain tensorfor (hhl)-oriented (Ga,Mn)As layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, 4.2, 'K', 2]

Ga
###Strain, magnetic anisotropy, and anisotropic magnetoresistance in (Ga,Mn)As on high-index substrates: application to (113)A-oriented layers|L. Dreher,D. Donhauser,J. Daeubler,M. Glunk,C. Rapp,W. Schoch,R. Sauer,W. Limmer###
(966849, 966849)
 Applying the results to(113)A orientation with monoclinic crystal symmetry, the expressions are usedto determine the strain tensor and the shear angle of a series of(113)A-oriented (Ga,Mn)As layers by high-resolution x<missing VAR>-ray diffraction and toprobe the M<missing VAR>A and AMR at 4.2 K by means of angle-dependent magnetotransport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 4.2, 'K', 0]

Mn
###Strain, magnetic anisotropy, and anisotropic magnetoresistance in (Ga,Mn)As on high-index substrates: application to (113)A-oriented layers|L. Dreher,D. Donhauser,J. Daeubler,M. Glunk,C. Rapp,W. Schoch,R. Sauer,W. Limmer###
(966851, 966851)
 Applying the results to(113)A orientation with monoclinic crystal symmetry, the expressions are usedto determine the strain tensor and the shear angle of a series of(113)A-oriented (Ga,Mn)As layers by high-resolution x<missing VAR>-ray diffraction and toprobe the M<missing VAR>A and AMR at 4.2 K by means of angle-dependent magnetotransport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 4.2, 'K', 0]

As
###Strain, magnetic anisotropy, and anisotropic magnetoresistance in (Ga,Mn)As on high-index substrates: application to (113)A-oriented layers|L. Dreher,D. Donhauser,J. Daeubler,M. Glunk,C. Rapp,W. Schoch,R. Sauer,W. Limmer###
(966853, 966853)
 Applying the results to(113)A orientation with monoclinic crystal symmetry, the expressions are usedto determine the strain tensor and the shear angle of a series of(113)A-oriented (Ga,Mn)As layers by high-resolution x<missing VAR>-ray diffraction and toprobe the M<missing VAR>A and AMR at 4.2 K by means of angle-dependent magnetotransport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 4.2, 'K', 0]

YbRh2Si2
###Energy scales and the non-Fermi liquid behavior in YbRh2Si2|V. R. Shaginyan,M. Ya. Amusia,K. G. Popov,S. A. Artamonov###
(966978, 966982)
Energy scales and the non-Fermi liquid behavior in YbRh2Si2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YbRh2Si2
###Energy scales and the non-Fermi liquid behavior in YbRh2Si2|V. R. Shaginyan,M. Ya. Amusia,K. G. Popov,S. A. Artamonov###
(967242, 967246)
 Ourcalculations of the non-Fermi liquid behavior, of the scales and thermodynamicand transport properties are in good agreement with the heat capacity,magnetization, longitudinal magnetoresistance and magnetic entropy obtained inremarkable measurements on the heavy fermion metal YbRh2Si2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Magnetic field effect on Fe-induced short-range magnetic correlation and electrical conductivity in Bi$_{1.75}$Pb$_{0.35}$Sr$_{1.90}$Cu$_{0.91}$Fe$_{0.09}$O$_{6+y}$|S. Wakimoto,H. Hiraka,K. Kudo,D. Okamoto,T. Nishizaki,K. Kakurai,Tao Hong,A. Zheludev,J. M. Tranquada,N. Kobayashi,K. Yamada###
(967265, 967265)
Magnetic field effect on Fe-induced short-range magnetic correlation and electrical conductivity in Bi1.75Pb0.35Sr1.90Cu0.91Fe0.09O6y<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 0.21, ',', 2]

Bi1.75Pb0.35Sr1.90Cu0.91Fe0.09O6
###Magnetic field effect on Fe-induced short-range magnetic correlation and electrical conductivity in Bi$_{1.75}$Pb$_{0.35}$Sr$_{1.90}$Cu$_{0.91}$Fe$_{0.09}$O$_{6+y}$|S. Wakimoto,H. Hiraka,K. Kudo,D. Okamoto,T. Nishizaki,K. Kakurai,Tao Hong,A. Zheludev,J. M. Tranquada,N. Kobayashi,K. Yamada###
(967285, 967296)
Magnetic field effect on Fe-induced short-range magnetic correlation and electrical conductivity in Bi1.75Pb0.35Sr1.90Cu0.91Fe0.09O6y<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5454545454545454,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.00818181818181818,0,0,0.08272727272727273,0,0,0,0,0,0,0,0,0.17272727272727273,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.031818181818181815,0.1590909090909091,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 0.21, ',', 2]

Bi1.75Pb0.35Sr1.90Cu0.91Fe0.09O6
###Magnetic field effect on Fe-induced short-range magnetic correlation and electrical conductivity in Bi$_{1.75}$Pb$_{0.35}$Sr$_{1.90}$Cu$_{0.91}$Fe$_{0.09}$O$_{6+y}$|S. Wakimoto,H. Hiraka,K. Kudo,D. Okamoto,T. Nishizaki,K. Kakurai,Tao Hong,A. Zheludev,J. M. Tranquada,N. Kobayashi,K. Yamada###
(967328, 967339)
 We report electrical resistivity measurements and neutron diffraction studiesunder magnetic fields ofBi1.75Pb0.35Sr1.90Cu0.91Fe0.09O6y<missing VAR>, in which holecarriers are overdoped.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5454545454545454,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.00818181818181818,0,0,0.08272727272727273,0,0,0,0,0,0,0,0,0.17272727272727273,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.031818181818181815,0.1590909090909091,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 0.21, ',', 1]

Fe
###Magnetic field effect on Fe-induced short-range magnetic correlation and electrical conductivity in Bi$_{1.75}$Pb$_{0.35}$Sr$_{1.90}$Cu$_{0.91}$Fe$_{0.09}$O$_{6+y}$|S. Wakimoto,H. Hiraka,K. Kudo,D. Okamoto,T. Nishizaki,K. Kakurai,Tao Hong,A. Zheludev,J. M. Tranquada,N. Kobayashi,K. Yamada###
(967386, 967386)
 This compound shows short-range incommensurate magneticcorrelation with incommensurability delta0.21, whereas a Fe-free compoundshows no magnetic correlation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 0.21, ',', 0]

Fe
###Magnetic field effect on Fe-induced short-range magnetic correlation and electrical conductivity in Bi$_{1.75}$Pb$_{0.35}$Sr$_{1.90}$Cu$_{0.91}$Fe$_{0.09}$O$_{6+y}$|S. Wakimoto,H. Hiraka,K. Kudo,D. Okamoto,T. Nishizaki,K. Kakurai,Tao Hong,A. Zheludev,J. M. Tranquada,N. Kobayashi,K. Yamada###
(967515, 967515)
Application of magnetic fields also suppresses the Fe induced incommensuratemagnetic correlation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 0.21, ',', 4]

O5
###Magnetic and Electrical Properties of Ordered 112-type Perovskite LnBaCoMnO5+δ(Ln = Nd, Eu)|Asish K. Kundu,V. Pralong,B. Raveau,V. Caignaert###
(967642, 967643)
Magnetic and Electrical Properties of Ordered 112-type Perovskite LnBaCoMnO5(Ln  Nd, Eu).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 220, 'K', 3],[186.0, 177, 'K', 3]

Nd
###Magnetic and Electrical Properties of Ordered 112-type Perovskite LnBaCoMnO5+δ(Ln = Nd, Eu)|Asish K. Kundu,V. Pralong,B. Raveau,V. Caignaert###
(967648, 967648)
Magnetic and Electrical Properties of Ordered 112-type Perovskite LnBaCoMnO5(Ln  Nd, Eu).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 220, 'K', 3],[181.0, 177, 'K', 3]

Eu
###Magnetic and Electrical Properties of Ordered 112-type Perovskite LnBaCoMnO5+δ(Ln = Nd, Eu)|Asish K. Kundu,V. Pralong,B. Raveau,V. Caignaert###
(967651, 967651)
Magnetic and Electrical Properties of Ordered 112-type Perovskite LnBaCoMnO5(Ln  Nd, Eu).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 220, 'K', 3],[178.0, 177, 'K', 3]

BaCoMnO5
###Magnetic and Electrical Properties of Ordered 112-type Perovskite LnBaCoMnO5+δ(Ln = Nd, Eu)|Asish K. Kundu,V. Pralong,B. Raveau,V. Caignaert###
(967681, 967685)
 Investigation of the oxygen-deficient 112-type ordered oxides of the typeLnBaCoMnO5delta (Ln  Nd, Eu) evidences certain unusual magnetic behavior atlow temperatures, compared to the LnBaCo2O5delta cobaltites.
Featurization terminated normally.
0,0,0,0,0,0,0,0.625,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 220, 'K', 2],[144.0, 177, 'K', 2]

Nd
###Magnetic and Electrical Properties of Ordered 112-type Perovskite LnBaCoMnO5+δ(Ln = Nd, Eu)|Asish K. Kundu,V. Pralong,B. Raveau,V. Caignaert###
(967692, 967692)
 Investigation of the oxygen-deficient 112-type ordered oxides of the typeLnBaCoMnO5delta (Ln  Nd, Eu) evidences certain unusual magnetic behavior atlow temperatures, compared to the LnBaCo2O5delta cobaltites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 220, 'K', 2],[137.0, 177, 'K', 2]

Eu
###Magnetic and Electrical Properties of Ordered 112-type Perovskite LnBaCoMnO5+δ(Ln = Nd, Eu)|Asish K. Kundu,V. Pralong,B. Raveau,V. Caignaert###
(967695, 967695)
 Investigation of the oxygen-deficient 112-type ordered oxides of the typeLnBaCoMnO5delta (Ln  Nd, Eu) evidences certain unusual magnetic behavior atlow temperatures, compared to the LnBaCo2O5delta cobaltites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 220, 'K', 2],[134.0, 177, 'K', 2]

BaCo2O5
###Magnetic and Electrical Properties of Ordered 112-type Perovskite LnBaCoMnO5+δ(Ln = Nd, Eu)|Asish K. Kundu,V. Pralong,B. Raveau,V. Caignaert###
(967723, 967727)
 Investigation of the oxygen-deficient 112-type ordered oxides of the typeLnBaCoMnO5delta (Ln  Nd, Eu) evidences certain unusual magnetic behavior atlow temperatures, compared to the LnBaCo2O5delta cobaltites.
Featurization terminated normally.
0,0,0,0,0,0,0,0.625,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 220, 'K', 2],[102.0, 177, 'K', 2]

NdBaCoMnO5.9
###Magnetic and Electrical Properties of Ordered 112-type Perovskite LnBaCoMnO5+δ(Ln = Nd, Eu)|Asish K. Kundu,V. Pralong,B. Raveau,V. Caignaert###
(967776, 967781)
 Importantly,NdBaCoMnO5.9 depicts a clear paramagnetic to antiferromagnetic type transitionaround 220 K, whereas for EuBaCoMnO5.7 one observes an unusual magneticbehavior below 177 K which consists of ferromagnetic regions embedded in anantiferromagnetic matrix.
Featurization terminated normally.
0,0,0,0,0,0,0,0.595959595959596,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.10101010101010101,0,0.10101010101010101,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.10101010101010101,0,0,0,0.10101010101010101,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 220, 'K', 0],[48.0, 177, 'K', 0]

EuBaCoMnO5.7
###Magnetic and Electrical Properties of Ordered 112-type Perovskite LnBaCoMnO5+δ(Ln = Nd, Eu)|Asish K. Kundu,V. Pralong,B. Raveau,V. Caignaert###
(967808, 967813)
 Importantly,NdBaCoMnO5.9 depicts a clear paramagnetic to antiferromagnetic type transitionaround 220 K, whereas for EuBaCoMnO5.7 one observes an unusual magneticbehavior below 177 K which consists of ferromagnetic regions embedded in anantiferromagnetic matrix.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5876288659793815,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.10309278350515465,0,0.10309278350515465,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.10309278350515465,0,0,0,0,0,0,0.10309278350515465,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 220, 'K', 0],[16.0, 177, 'K', 0]

Co/Mn
###Magnetic and Electrical Properties of Ordered 112-type Perovskite LnBaCoMnO5+δ(Ln = Nd, Eu)|Asish K. Kundu,V. Pralong,B. Raveau,V. Caignaert###
(967872, 967874)
 The existence of two sorts of crystallographic sitesfor Co/Mn and their mixed valence states favor the ferromagnetic interactionwhereas antiferromagnetism originates from the Co3-O-Co3 and Mn4-O-Mn4interactions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[71.0, 220, 'K', 1],[43.0, 177, 'K', 1]

Co3
###Magnetic and Electrical Properties of Ordered 112-type Perovskite LnBaCoMnO5+δ(Ln = Nd, Eu)|Asish K. Kundu,V. Pralong,B. Raveau,V. Caignaert###
(967905, 967906)
 The existence of two sorts of crystallographic sitesfor Co/Mn and their mixed valence states favor the ferromagnetic interactionwhereas antiferromagnetism originates from the Co3-O-Co3 and Mn4-O-Mn4interactions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 220, 'K', 1],[76.0, 177, 'K', 1]

O
###Magnetic and Electrical Properties of Ordered 112-type Perovskite LnBaCoMnO5+δ(Ln = Nd, Eu)|Asish K. Kundu,V. Pralong,B. Raveau,V. Caignaert###
(967908, 967908)
 The existence of two sorts of crystallographic sitesfor Co/Mn and their mixed valence states favor the ferromagnetic interactionwhereas antiferromagnetism originates from the Co3-O-Co3 and Mn4-O-Mn4interactions.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 220, 'K', 1],[79.0, 177, 'K', 1]

Co3
###Magnetic and Electrical Properties of Ordered 112-type Perovskite LnBaCoMnO5+δ(Ln = Nd, Eu)|Asish K. Kundu,V. Pralong,B. Raveau,V. Caignaert###
(967910, 967911)
 The existence of two sorts of crystallographic sitesfor Co/Mn and their mixed valence states favor the ferromagnetic interactionwhereas antiferromagnetism originates from the Co3-O-Co3 and Mn4-O-Mn4interactions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 220, 'K', 1],[81.0, 177, 'K', 1]

Mn4
###Magnetic and Electrical Properties of Ordered 112-type Perovskite LnBaCoMnO5+δ(Ln = Nd, Eu)|Asish K. Kundu,V. Pralong,B. Raveau,V. Caignaert###
(967915, 967916)
 The existence of two sorts of crystallographic sitesfor Co/Mn and their mixed valence states favor the ferromagnetic interactionwhereas antiferromagnetism originates from the Co3-O-Co3 and Mn4-O-Mn4interactions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 220, 'K', 1],[86.0, 177, 'K', 1]

O
###Magnetic and Electrical Properties of Ordered 112-type Perovskite LnBaCoMnO5+δ(Ln = Nd, Eu)|Asish K. Kundu,V. Pralong,B. Raveau,V. Caignaert###
(967918, 967918)
 The existence of two sorts of crystallographic sitesfor Co/Mn and their mixed valence states favor the ferromagnetic interactionwhereas antiferromagnetism originates from the Co3-O-Co3 and Mn4-O-Mn4interactions.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 220, 'K', 1],[89.0, 177, 'K', 1]

Mn4
###Magnetic and Electrical Properties of Ordered 112-type Perovskite LnBaCoMnO5+δ(Ln = Nd, Eu)|Asish K. Kundu,V. Pralong,B. Raveau,V. Caignaert###
(967920, 967921)
 The existence of two sorts of crystallographic sitesfor Co/Mn and their mixed valence states favor the ferromagnetic interactionwhereas antiferromagnetism originates from the Co3-O-Co3 and Mn4-O-Mn4interactions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 220, 'K', 1],[91.0, 177, 'K', 1]

Mn
###Magnetic and Electrical Properties of Ordered 112-type Perovskite LnBaCoMnO5+δ(Ln = Nd, Eu)|Asish K. Kundu,V. Pralong,B. Raveau,V. Caignaert###
(967940, 967940)
 Unlike the parent compounds, the present Mn-substituted phases donot exhibit prominent magnetoresistance effects in the temperature range75-400K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 220, 'K', 2],[111.0, 177, 'K', 2]

K
###Magnetic and Electrical Properties of Ordered 112-type Perovskite LnBaCoMnO5+δ(Ln = Nd, Eu)|Asish K. Kundu,V. Pralong,B. Raveau,V. Caignaert###
(967971, 967971)
 Unlike the parent compounds, the present Mn-substituted phases donot exhibit prominent magnetoresistance effects in the temperature range75-400K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[170.0, 220, 'K', 2],[142.0, 177, 'K', 2]

In
###The Realization of Artificial Kondo Lattices in Nanostructured Arrays|D. K. Singh,M. T. Tuominen###
(968422, 968422)
 In this article,we create a Kondo lattice system by fabricating a hexagonally orderednanostructured array using niobium as the host metal and cobalt as the magneticconstituent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Se3
###Van der Waals epitaxy of Bi2Se3 on Si(111) vicinal surface: An approach to prepare high-quality thin films of topological insulator|H. D. Li,Z. Y. Wang,X. Kan,X. Guo,H. T. He,Z. Wang,J. N. Wang,T. L. Wong,N. Wang,M. H. Xie###
(968940, 968943)
Van der Waals epitaxy of Bi2Se3 on Si(111) vicinal surface An approach to prepare high-quality thin films of topological insulator.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[254.0, 2000, 'cm', 4],[274.0, 3, 'x', 4],[275.0, 1018, 'cm', 4]

Bi2Se3
###Van der Waals epitaxy of Bi2Se3 on Si(111) vicinal surface: An approach to prepare high-quality thin films of topological insulator|H. D. Li,Z. Y. Wang,X. Kan,X. Guo,H. T. He,Z. Wang,J. N. Wang,T. L. Wong,N. Wang,M. H. Xie###
(968989, 968992)
 Epitaxial growth of topological insulator Bi2Se3 thin films on nominally flatand vicinal Si(111) substrates is studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, 2000, 'cm', 3],[225.0, 3, 'x', 3],[226.0, 1018, 'cm', 3]

In
###Van der Waals epitaxy of Bi2Se3 on Si(111) vicinal surface: An approach to prepare high-quality thin films of topological insulator|H. D. Li,Z. Y. Wang,X. Kan,X. Guo,H. T. He,Z. Wang,J. N. Wang,T. L. Wong,N. Wang,M. H. Xie###
(969021, 969021)
 In order to achieve planner growthfront and better quality epifilms, a two-step growth method is adopted for thevan der Waal epitaxy of Bi2Se3 to proceed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[176.0, 2000, 'cm', 2],[196.0, 3, 'x', 2],[197.0, 1018, 'cm', 2]

Bi2Se3
###Van der Waals epitaxy of Bi2Se3 on Si(111) vicinal surface: An approach to prepare high-quality thin films of topological insulator|H. D. Li,Z. Y. Wang,X. Kan,X. Guo,H. T. He,Z. Wang,J. N. Wang,T. L. Wong,N. Wang,M. H. Xie###
(969074, 969077)
 In order to achieve planner growthfront and better quality epifilms, a two-step growth method is adopted for thevan der Waal epitaxy of Bi2Se3 to proceed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 2000, 'cm', 2],[140.0, 3, 'x', 2],[141.0, 1018, 'cm', 2]

Bi2Se3
###Van der Waals epitaxy of Bi2Se3 on Si(111) vicinal surface: An approach to prepare high-quality thin films of topological insulator|H. D. Li,Z. Y. Wang,X. Kan,X. Guo,H. T. He,Z. Wang,J. N. Wang,T. L. Wong,N. Wang,M. H. Xie###
(969115, 969118)
 By employing vicinal Si(111)substrate surfaces, the in-pane growth rate anisotropy of Bi2Se3 is explored toachieve single crystalline Bi2Se3 epifilms, in which threading defects andtwins are effectively suppressed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 2000, 'cm', 1],[99.0, 3, 'x', 1],[100.0, 1018, 'cm', 1]

Bi2Se3
###Van der Waals epitaxy of Bi2Se3 on Si(111) vicinal surface: An approach to prepare high-quality thin films of topological insulator|H. D. Li,Z. Y. Wang,X. Kan,X. Guo,H. T. He,Z. Wang,J. N. Wang,T. L. Wong,N. Wang,M. H. Xie###
(969133, 969136)
 By employing vicinal Si(111)substrate surfaces, the in-pane growth rate anisotropy of Bi2Se3 is explored toachieve single crystalline Bi2Se3 epifilms, in which threading defects andtwins are effectively suppressed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 2000, 'cm', 1],[81.0, 3, 'x', 1],[82.0, 1018, 'cm', 1]

Bi2Se3
###Van der Waals epitaxy of Bi2Se3 on Si(111) vicinal surface: An approach to prepare high-quality thin films of topological insulator|H. D. Li,Z. Y. Wang,X. Kan,X. Guo,H. T. He,Z. Wang,J. N. Wang,T. L. Wong,N. Wang,M. H. Xie###
(969180, 969183)
 Optimization of the growth parameters hasresulted in vicinal Bi2Se3 films showing a carrier mobility of  2000 cm2V-1s<missing VAR>-1and the background doping of  3 x 1018 cm-3 of the as-grown layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 2000, 'cm', 0],[34.0, 3, 'x', 0],[35.0, 1018, 'cm', 0]

V
###Van der Waals epitaxy of Bi2Se3 on Si(111) vicinal surface: An approach to prepare high-quality thin films of topological insulator|H. D. Li,Z. Y. Wang,X. Kan,X. Guo,H. T. He,Z. Wang,J. N. Wang,T. L. Wong,N. Wang,M. H. Xie###
(969199, 969199)
 Optimization of the growth parameters hasresulted in vicinal Bi2Se3 films showing a carrier mobility of  2000 cm2V-1s<missing VAR>-1and the background doping of  3 x 1018 cm-3 of the as-grown layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 2000, 'cm', 0],[18.0, 3, 'x', 0],[19.0, 1018, 'cm', 0]

In
###Spin and Charge Transport on the Surface of a Topological Insulator|A. A. Burkov,D. G. Hawthorn###
(969392, 969392)
 In particular, wepredict a new magnetoresistance effect, which manifests in a nonohmiccorrection to a voltage drop between a ferromagnetic spin-polarized electrodeand a nonmagnetic electrode, placed on top of the helical metal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Metal-terminated Graphene Nanoribbons|Yan Wang,Chao Cao,Hai-Ping Cheng###
(969625, 969625)
 We have investigated structure, electronic, and magnetic properties ofmetal-terminated zigzag graphene nanoribbons (M-ZGNRs) by first-principlescalculations.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 3, 'd', 1]

Fe
###Metal-terminated Graphene Nanoribbons|Yan Wang,Chao Cao,Hai-Ping Cheng###
(969668, 969668)
 Two families of metal terminations are studied (1) 3d-transitionmetals (T<missing VAR>Ms) Fe, Co, and Ni and (2) noble metals (NMs) Cu, Ag, and Au.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 3, 'd', 0]

Co
###Metal-terminated Graphene Nanoribbons|Yan Wang,Chao Cao,Hai-Ping Cheng###
(969671, 969671)
 Two families of metal terminations are studied (1) 3d-transitionmetals (T<missing VAR>Ms) Fe, Co, and Ni and (2) noble metals (NMs) Cu, Ag, and Au.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 3, 'd', 0]

Ni
###Metal-terminated Graphene Nanoribbons|Yan Wang,Chao Cao,Hai-Ping Cheng###
(969676, 969676)
 Two families of metal terminations are studied (1) 3d-transitionmetals (T<missing VAR>Ms) Fe, Co, and Ni and (2) noble metals (NMs) Cu, Ag, and Au.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 3, 'd', 0]

N
###Metal-terminated Graphene Nanoribbons|Yan Wang,Chao Cao,Hai-Ping Cheng###
(969689, 969689)
 Two families of metal terminations are studied (1) 3d-transitionmetals (T<missing VAR>Ms) Fe, Co, and Ni and (2) noble metals (NMs) Cu, Ag, and Au.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 3, 'd', 0]

Cu
###Metal-terminated Graphene Nanoribbons|Yan Wang,Chao Cao,Hai-Ping Cheng###
(969693, 969693)
 Two families of metal terminations are studied (1) 3d-transitionmetals (T<missing VAR>Ms) Fe, Co, and Ni and (2) noble metals (NMs) Cu, Ag, and Au.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 3, 'd', 0]

Ag
###Metal-terminated Graphene Nanoribbons|Yan Wang,Chao Cao,Hai-Ping Cheng###
(969696, 969696)
 Two families of metal terminations are studied (1) 3d-transitionmetals (T<missing VAR>Ms) Fe, Co, and Ni and (2) noble metals (NMs) Cu, Ag, and Au.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 3, 'd', 0]

Au
###Metal-terminated Graphene Nanoribbons|Yan Wang,Chao Cao,Hai-Ping Cheng###
(969701, 969701)
 Two families of metal terminations are studied (1) 3d-transitionmetals (T<missing VAR>Ms) Fe, Co, and Ni and (2) noble metals (NMs) Cu, Ag, and Au.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 3, 'd', 0]

F
###Metal-terminated Graphene Nanoribbons|Yan Wang,Chao Cao,Hai-Ping Cheng###
(969725, 969725)
 Allsystems have spin-polarized edge states with antiferromagnetic (AFM) orderingbetween two edges, except Co-ZGNRs and Ni-ZGNRs which exhibit negligibly smallenergy differences between AFM<missing VAR> and ferromagnetic states with the given ribbonwidth.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 3, 'd', 1]

Co
###Metal-terminated Graphene Nanoribbons|Yan Wang,Chao Cao,Hai-Ping Cheng###
(969741, 969741)
 Allsystems have spin-polarized edge states with antiferromagnetic (AFM) orderingbetween two edges, except Co-ZGNRs and Ni-ZGNRs which exhibit negligibly smallenergy differences between AFM<missing VAR> and ferromagnetic states with the given ribbonwidth.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 3, 'd', 1]

N
###Metal-terminated Graphene Nanoribbons|Yan Wang,Chao Cao,Hai-Ping Cheng###
(969745, 969745)
 Allsystems have spin-polarized edge states with antiferromagnetic (AFM) orderingbetween two edges, except Co-ZGNRs and Ni-ZGNRs which exhibit negligibly smallenergy differences between AFM<missing VAR> and ferromagnetic states with the given ribbonwidth.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 3, 'd', 1]

Ni
###Metal-terminated Graphene Nanoribbons|Yan Wang,Chao Cao,Hai-Ping Cheng###
(969750, 969750)
 Allsystems have spin-polarized edge states with antiferromagnetic (AFM) orderingbetween two edges, except Co-ZGNRs and Ni-ZGNRs which exhibit negligibly smallenergy differences between AFM<missing VAR> and ferromagnetic states with the given ribbonwidth.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 3, 'd', 1]

N
###Metal-terminated Graphene Nanoribbons|Yan Wang,Chao Cao,Hai-Ping Cheng###
(969754, 969754)
 Allsystems have spin-polarized edge states with antiferromagnetic (AFM) orderingbetween two edges, except Co-ZGNRs and Ni-ZGNRs which exhibit negligibly smallenergy differences between AFM<missing VAR> and ferromagnetic states with the given ribbonwidth.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 3, 'd', 1]

F
###Metal-terminated Graphene Nanoribbons|Yan Wang,Chao Cao,Hai-Ping Cheng###
(969773, 969773)
 Allsystems have spin-polarized edge states with antiferromagnetic (AFM) orderingbetween two edges, except Co-ZGNRs and Ni-ZGNRs which exhibit negligibly smallenergy differences between AFM<missing VAR> and ferromagnetic states with the given ribbonwidth.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 3, 'd', 1]

In
###Metal-terminated Graphene Nanoribbons|Yan Wang,Chao Cao,Hai-Ping Cheng###
(969794, 969794)
 In the AFM<missing VAR> state the TM terminations transform semiconducting ZGNRs intometallic ones while the band gap remains in ZGNR<missing VAR> with NM<missing VAR> terminations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 3, 'd', 2]

F
###Metal-terminated Graphene Nanoribbons|Yan Wang,Chao Cao,Hai-Ping Cheng###
(969799, 969799)
 In the AFM<missing VAR> state the TM terminations transform semiconducting ZGNRs intometallic ones while the band gap remains in ZGNR<missing VAR> with NM<missing VAR> terminations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 3, 'd', 2]

N
###Metal-terminated Graphene Nanoribbons|Yan Wang,Chao Cao,Hai-Ping Cheng###
(969817, 969817)
 In the AFM<missing VAR> state the TM terminations transform semiconducting ZGNRs intometallic ones while the band gap remains in ZGNR<missing VAR> with NM<missing VAR> terminations.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 3, 'd', 2]

N
###Metal-terminated Graphene Nanoribbons|Yan Wang,Chao Cao,Hai-Ping Cheng###
(969841, 969841)
 In the AFM<missing VAR> state the TM terminations transform semiconducting ZGNRs intometallic ones while the band gap remains in ZGNR<missing VAR> with NM<missing VAR> terminations.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[185.0, 3, 'd', 2]

N
###Metal-terminated Graphene Nanoribbons|Yan Wang,Chao Cao,Hai-Ping Cheng###
(969846, 969846)
 In the AFM<missing VAR> state the TM terminations transform semiconducting ZGNRs intometallic ones while the band gap remains in ZGNR<missing VAR> with NM<missing VAR> terminations.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[190.0, 3, 'd', 2]

N
###Metal-terminated Graphene Nanoribbons|Yan Wang,Chao Cao,Hai-Ping Cheng###
(969863, 969863)
Ferromagnetic states of M-ZGNRs with TM terminations show a high degree of spinpolarization at the Fermi energy.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[207.0, 3, 'd', 3]

Fe
###Metal-terminated Graphene Nanoribbons|Yan Wang,Chao Cao,Hai-Ping Cheng###
(969910, 969910)
 We predict a large magnetoresistance inFe-ZGNR<missing VAR> junctions with a low, uniform magnetic switching field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[254.0, 3, 'd', 4]

N
###Metal-terminated Graphene Nanoribbons|Yan Wang,Chao Cao,Hai-Ping Cheng###
(969914, 969914)
 We predict a large magnetoresistance inFe-ZGNR<missing VAR> junctions with a low, uniform magnetic switching field.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[258.0, 3, 'd', 4]

CeRu2Al10
###Existence of Fine Structure inside Spin Gap in CeRu2Al10|Hiroshi Tanida,Daiki Tanaka,Masafumi Sera,Chikako Moriyoshi,Yoshihiro Kuroiwa,Tomoaki Takesaka,Takashi Nishioka,Harukazu Kato,Masahiro Matsumura###
(969959, 969963)
Existence of Fine Structure inside Spin Gap in CeRu2Al10.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.7692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15384615384615385,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[168.0, 5, 'T', 3],[283.0, 8, 'meV', 6]

CeRu2Al10
###Existence of Fine Structure inside Spin Gap in CeRu2Al10|Hiroshi Tanida,Daiki Tanaka,Masafumi Sera,Chikako Moriyoshi,Yoshihiro Kuroiwa,Tomoaki Takesaka,Takashi Nishioka,Harukazu Kato,Masahiro Matsumura###
(969990, 969994)
 We investigate the magnetic field effect on the spin gap state in CeRu2Al10by measuring the magnetization and electrical resistivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.7692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15384615384615385,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 5, 'T', 2],[252.0, 8, 'meV', 5]

H
###Existence of Fine Structure inside Spin Gap in CeRu2Al10|Hiroshi Tanida,Daiki Tanaka,Masafumi Sera,Chikako Moriyoshi,Yoshihiro Kuroiwa,Tomoaki Takesaka,Takashi Nishioka,Harukazu Kato,Masahiro Matsumura###
(970033, 970033)
 We found that themagnetization curve for the magnetic field H//c<missing VAR> shows a metamagnetic-likeanomaly at H4 T<missing VAR> below T<missing VAR>027 K, but no anomaly for H//a and H//b<missing VAR>.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 5, 'T', 1],[213.0, 8, 'meV', 4]

H4
###Existence of Fine Structure inside Spin Gap in CeRu2Al10|Hiroshi Tanida,Daiki Tanaka,Masafumi Sera,Chikako Moriyoshi,Yoshihiro Kuroiwa,Tomoaki Takesaka,Takashi Nishioka,Harukazu Kato,Masahiro Matsumura###
(970051, 970052)
 We found that themagnetization curve for the magnetic field H//c<missing VAR> shows a metamagnetic-likeanomaly at H4 T<missing VAR> below T<missing VAR>027 K, but no anomaly for H//a and H//b<missing VAR>.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 5, 'T', 1],[194.0, 8, 'meV', 4]

K
###Existence of Fine Structure inside Spin Gap in CeRu2Al10|Hiroshi Tanida,Daiki Tanaka,Masafumi Sera,Chikako Moriyoshi,Yoshihiro Kuroiwa,Tomoaki Takesaka,Takashi Nishioka,Harukazu Kato,Masahiro Matsumura###
(970062, 970062)
 We found that themagnetization curve for the magnetic field H//c<missing VAR> shows a metamagnetic-likeanomaly at H4 T<missing VAR> below T<missing VAR>027 K, but no anomaly for H//a and H//b<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 5, 'T', 1],[184.0, 8, 'meV', 4]

H
###Existence of Fine Structure inside Spin Gap in CeRu2Al10|Hiroshi Tanida,Daiki Tanaka,Masafumi Sera,Chikako Moriyoshi,Yoshihiro Kuroiwa,Tomoaki Takesaka,Takashi Nishioka,Harukazu Kato,Masahiro Matsumura###
(970073, 970073)
 We found that themagnetization curve for the magnetic field H//c<missing VAR> shows a metamagnetic-likeanomaly at H4 T<missing VAR> below T<missing VAR>027 K, but no anomaly for H//a and H//b<missing VAR>.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 5, 'T', 1],[173.0, 8, 'meV', 4]

H
###Existence of Fine Structure inside Spin Gap in CeRu2Al10|Hiroshi Tanida,Daiki Tanaka,Masafumi Sera,Chikako Moriyoshi,Yoshihiro Kuroiwa,Tomoaki Takesaka,Takashi Nishioka,Harukazu Kato,Masahiro Matsumura###
(970080, 970080)
 We found that themagnetization curve for the magnetic field H//c<missing VAR> shows a metamagnetic-likeanomaly at H4 T<missing VAR> below T<missing VAR>027 K, but no anomaly for H//a and H//b<missing VAR>.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 5, 'T', 1],[166.0, 8, 'meV', 4]

K
###Existence of Fine Structure inside Spin Gap in CeRu2Al10|Hiroshi Tanida,Daiki Tanaka,Masafumi Sera,Chikako Moriyoshi,Yoshihiro Kuroiwa,Tomoaki Takesaka,Takashi Nishioka,Harukazu Kato,Masahiro Matsumura###
(970104, 970104)
 A shoulderof the electrical resistivity at Ts5 K for I//c<missing VAR> is suppressed by applying alongitudinal magnetic field above 5 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 5, 'T', 0],[142.0, 8, 'meV', 3]

I
###Existence of Fine Structure inside Spin Gap in CeRu2Al10|Hiroshi Tanida,Daiki Tanaka,Masafumi Sera,Chikako Moriyoshi,Yoshihiro Kuroiwa,Tomoaki Takesaka,Takashi Nishioka,Harukazu Kato,Masahiro Matsumura###
(970108, 970108)
 A shoulderof the electrical resistivity at Ts5 K for I//c<missing VAR> is suppressed by applying alongitudinal magnetic field above 5 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 5, 'T', 0],[138.0, 8, 'meV', 3]

K
###Existence of Fine Structure inside Spin Gap in CeRu2Al10|Hiroshi Tanida,Daiki Tanaka,Masafumi Sera,Chikako Moriyoshi,Yoshihiro Kuroiwa,Tomoaki Takesaka,Takashi Nishioka,Harukazu Kato,Masahiro Matsumura###
(970159, 970159)
 Many anomalies are also found in themagnetoresistance for Hkc below 5 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 5, 'T', 1],[87.0, 8, 'meV', 2]

F
###The dynamics of magnetic vortex states in a single permalloy nanoparticle|Dmitry Ruzmetov,Venkat Chandrasekhar###
(970392, 970392)
Elliptical 550 nm x<missing VAR> 240 nm permalloy nanoparticles are wired with non-magneticleads for magnetotransport measurements in the presence of a radio-frequency(R<missing VAR>F) field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 550, 'nm', 0],[42.0, 240, 'nm', 0],[173.0, 6, 'MHz', 4]

F
###The dynamics of magnetic vortex states in a single permalloy nanoparticle|Dmitry Ruzmetov,Venkat Chandrasekhar###
(970431, 970431)
 An R<missing VAR>F field induces D<missing VAR>C voltageacross the nanoparticle which can be partially depleted at a certain R<missing VAR>Ffrequency when a magnetic vortex core resonance is present.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 550, 'nm', 2],[81.0, 240, 'nm', 2],[134.0, 6, 'MHz', 2]

C
###The dynamics of magnetic vortex states in a single permalloy nanoparticle|Dmitry Ruzmetov,Venkat Chandrasekhar###
(970438, 970438)
 An R<missing VAR>F field induces D<missing VAR>C voltageacross the nanoparticle which can be partially depleted at a certain R<missing VAR>Ffrequency when a magnetic vortex core resonance is present.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 550, 'nm', 2],[88.0, 240, 'nm', 2],[127.0, 6, 'MHz', 2]

F
###The dynamics of magnetic vortex states in a single permalloy nanoparticle|Dmitry Ruzmetov,Venkat Chandrasekhar###
(970466, 970466)
 An R<missing VAR>F field induces D<missing VAR>C voltageacross the nanoparticle which can be partially depleted at a certain R<missing VAR>Ffrequency when a magnetic vortex core resonance is present.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 550, 'nm', 2],[116.0, 240, 'nm', 2],[99.0, 6, 'MHz', 2]

C
###The dynamics of magnetic vortex states in a single permalloy nanoparticle|Dmitry Ruzmetov,Venkat Chandrasekhar###
(970500, 970500)
 An application ofan additional D<missing VAR>C magnetic field eliminates the vortex and reinstates theunperturbed D<missing VAR>C voltage level.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 550, 'nm', 3],[150.0, 240, 'nm', 3],[65.0, 6, 'MHz', 1]

C
###The dynamics of magnetic vortex states in a single permalloy nanoparticle|Dmitry Ruzmetov,Venkat Chandrasekhar###
(970522, 970522)
 An application ofan additional D<missing VAR>C magnetic field eliminates the vortex and reinstates theunperturbed D<missing VAR>C voltage level.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 550, 'nm', 3],[172.0, 240, 'nm', 3],[43.0, 6, 'MHz', 1]

Nd0.5Sr0.5MnO3
###Microwave imaging of mesoscopic percolating network in a manganite thin film|Keji Lai,Masao Nakamura,Worasom Kundhikanjana,Masashi Kawasaki,Yoshinori Tokura,Michael A. Kelly,Zhi-Xun Shen###
(970707, 970713)
 Using a microwave impedance microscope, weobserved an orientation-ordered percolating network in strained Nd0.5Sr0.5MnO3thin films with a large period of 100 nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 100, 'nm', 0]

In
###Interlayer Exchange Coupling Beyond the Proximity Force Approximation|Ching-Hao Chang,Tzay-Ming Hong###
(970981, 970981)
 In the case of mild corrugations, our method reproduces thepredictions by the proximity force approximation which does not consider theinterference.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Spin-Boson Theory for Magnetotransport in Organic Semiconducting Materials|Yao Yao,Wei Si,Xiaoyuan Hou,Chang-Qin Wu###
(971306, 971306)
 We present a spin-boson theory for magnetotransport in organic semiconductingmaterials, on the basis of a coupling between charge carriers spin and a localbosonic environment, which is shown to be an irreducible ingredient inunderstanding of the anomalous organic magnetoresistance (OMR).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Spin-Boson Theory for Magnetotransport in Organic Semiconducting Materials|Yao Yao,Wei Si,Xiaoyuan Hou,Chang-Qin Wu###
(971368, 971368)
 The incoherenthopping rate between molecules is calculated to give out the fundamentalbehavior of OMR.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Spin-Boson Theory for Magnetotransport in Organic Semiconducting Materials|Yao Yao,Wei Si,Xiaoyuan Hou,Chang-Qin Wu###
(971435, 971435)
 We also obtain the dependence of OMR on the bias voltage, thespin-boson coupling, and the boson frequency.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nd0.8Sr0.2MnO3
###Transition from a ferromagnetic insulating to a ferromagnetic metallic state in nanoparticles of Nd0.8Sr0.2MnO3 : Study of the electronic - and magneto - transport properties|S. Kundu,T. K. Nath###
(971527, 971533)
Transition from a ferromagnetic insulating to a ferromagnetic metallic state in nanoparticles of Nd0.8Sr0.2MnO3  Study of the electronic - and magneto - transport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.04,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 42, 'nm', 1]

Nd0.8Sr0.2MnO3
###Transition from a ferromagnetic insulating to a ferromagnetic metallic state in nanoparticles of Nd0.8Sr0.2MnO3 : Study of the electronic - and magneto - transport properties|S. Kundu,T. K. Nath###
(971584, 971590)
 A detailed investigation of the electronic - and magneto - transportproperties of Nd0.8Sr0.2MnO3 with the variation of grain size (down to 42 nm)is presented here.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.04,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 42, 'nm', 0]

As
###Transition from a ferromagnetic insulating to a ferromagnetic metallic state in nanoparticles of Nd0.8Sr0.2MnO3 : Study of the electronic - and magneto - transport properties|S. Kundu,T. K. Nath###
(971673, 971673)
 As a result, metal insulator transition is observed in thislow doped manganite which is insulating in nature in its bulk form.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 42, 'nm', 2]

Pr0.8Ca0.2MnO3
###Modulation of the ferromagnetic insulating phase in Pr0.8Ca0.2MnO3 by Co substitution|T. Harada,I. Ohkubo,M. Lippmaa,Y. Matsumoto,M. Sumiya,H. Koinuma,M. Oshima###
(972216, 972222)
Modulation of the ferromagnetic insulating phase in Pr0.8Ca0.2MnO3 by Co substitution.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.04,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[209.0, 0.3, ',', 4]

Co
###Modulation of the ferromagnetic insulating phase in Pr0.8Ca0.2MnO3 by Co substitution|T. Harada,I. Ohkubo,M. Lippmaa,Y. Matsumoto,M. Sumiya,H. Koinuma,M. Oshima###
(972226, 972226)
Modulation of the ferromagnetic insulating phase in Pr0.8Ca0.2MnO3 by Co substitution.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, 0.3, ',', 4]

Pr0.8Ca0.2Mn1-y
###Modulation of the ferromagnetic insulating phase in Pr0.8Ca0.2MnO3 by Co substitution|T. Harada,I. Ohkubo,M. Lippmaa,Y. Matsumoto,M. Sumiya,H. Koinuma,M. Oshima###
(972235, 972242)
 Ferromagnetic insulator Pr0.8Ca0.2Mn1-yCoyO3 (0 < y<missing VAR> < 0.7) thin films wereepitaxially grown on (LaAlO3)0.3-(SrAl0.5Ta0.5O3)0.7 (100) substrates by pulsedlaser deposition.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[189.0, 0.3, ',', 3]

O3
###Modulation of the ferromagnetic insulating phase in Pr0.8Ca0.2MnO3 by Co substitution|T. Harada,I. Ohkubo,M. Lippmaa,Y. Matsumoto,M. Sumiya,H. Koinuma,M. Oshima###
(972244, 972245)
 Ferromagnetic insulator Pr0.8Ca0.2Mn1-yCoyO3 (0 < y<missing VAR> < 0.7) thin films wereepitaxially grown on (LaAlO3)0.3-(SrAl0.5Ta0.5O3)0.7 (100) substrates by pulsedlaser deposition.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, 0.3, ',', 3]

(LaAlO3)0.3
###Modulation of the ferromagnetic insulating phase in Pr0.8Ca0.2MnO3 by Co substitution|T. Harada,I. Ohkubo,M. Lippmaa,Y. Matsumoto,M. Sumiya,H. Koinuma,M. Oshima###
(972272, 972278)
 Ferromagnetic insulator Pr0.8Ca0.2Mn1-yCoyO3 (0 < y<missing VAR> < 0.7) thin films wereepitaxially grown on (LaAlO3)0.3-(SrAl0.5Ta0.5O3)0.7 (100) substrates by pulsedlaser deposition.
Featurization successful!
0,0,0,0,0,0,0,0.6,0,0,0,0,0.19999999999999998,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.19999999999999998,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 0.3, ',', 3]

(SrAl0.5Ta0.5O3)0.7
###Modulation of the ferromagnetic insulating phase in Pr0.8Ca0.2MnO3 by Co substitution|T. Harada,I. Ohkubo,M. Lippmaa,Y. Matsumoto,M. Sumiya,H. Koinuma,M. Oshima###
(972280, 972289)
 Ferromagnetic insulator Pr0.8Ca0.2Mn1-yCoyO3 (0 < y<missing VAR> < 0.7) thin films wereepitaxially grown on (LaAlO3)0.3-(SrAl0.5Ta0.5O3)0.7 (100) substrates by pulsedlaser deposition.
Featurization successful!
0,0,0,0,0,0,0,0.6,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 0.3, ',', 3]

Co
###Modulation of the ferromagnetic insulating phase in Pr0.8Ca0.2MnO3 by Co substitution|T. Harada,I. Ohkubo,M. Lippmaa,Y. Matsumoto,M. Sumiya,H. Koinuma,M. Oshima###
(972331, 972331)
 To probe the ferromagnetic insulator state of hole-dopedmanganites, the Co content dependences of the structural, magnetic, andtransport properties were studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 0.3, ',', 2]

Co
###Modulation of the ferromagnetic insulating phase in Pr0.8Ca0.2MnO3 by Co substitution|T. Harada,I. Ohkubo,M. Lippmaa,Y. Matsumoto,M. Sumiya,H. Koinuma,M. Oshima###
(972376, 972376)
 Variation of lattice constant by thesubstitution of Co ions is well reproduced considering that divalent andtrivalent Co ions substitute for Mn ions at the perovskite B-sites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 0.3, ',', 1]

Co
###Modulation of the ferromagnetic insulating phase in Pr0.8Ca0.2MnO3 by Co substitution|T. Harada,I. Ohkubo,M. Lippmaa,Y. Matsumoto,M. Sumiya,H. Koinuma,M. Oshima###
(972397, 972397)
 Variation of lattice constant by thesubstitution of Co ions is well reproduced considering that divalent andtrivalent Co ions substitute for Mn ions at the perovskite B-sites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 0.3, ',', 1]

Mn
###Modulation of the ferromagnetic insulating phase in Pr0.8Ca0.2MnO3 by Co substitution|T. Harada,I. Ohkubo,M. Lippmaa,Y. Matsumoto,M. Sumiya,H. Koinuma,M. Oshima###
(972405, 972405)
 Variation of lattice constant by thesubstitution of Co ions is well reproduced considering that divalent andtrivalent Co ions substitute for Mn ions at the perovskite B-sites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 0.3, ',', 1]

B
###Modulation of the ferromagnetic insulating phase in Pr0.8Ca0.2MnO3 by Co substitution|T. Harada,I. Ohkubo,M. Lippmaa,Y. Matsumoto,M. Sumiya,H. Koinuma,M. Oshima###
(972415, 972415)
 Variation of lattice constant by thesubstitution of Co ions is well reproduced considering that divalent andtrivalent Co ions substitute for Mn ions at the perovskite B-sites.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 0.3, ',', 1]

Co
###Modulation of the ferromagnetic insulating phase in Pr0.8Ca0.2MnO3 by Co substitution|T. Harada,I. Ohkubo,M. Lippmaa,Y. Matsumoto,M. Sumiya,H. Koinuma,M. Oshima###
(972457, 972457)
 For 0 < y<missing VAR>< 0.3, the Curie temperature, saturation magnetization, and magnetoresistanceincrease with increasing Co content, retaining the insulating properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 0.3, ',', 0]

K
###Weak Localization and Dimensional Crossover in Carbon Nanotube Systems|M. Salvato,M. Lucci,I. Ottaviani,M. Cirillo,S. Orlanducci,F. Toschi,M. L. Terranova###
(972783, 972783)
 This length results equal to theaverage bundles diameter just at T<missing VAR>backcong85K, indicating that the observedconductance transition is due to a 2D-3D<missing VAR> crossover.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 4.2, 'K', 3],[87.0, 85, 'K', 2],[23.0, 2, 'D', 0]

YbRh2Si2
###Discontinuous Hall coefficient at the quantum critical point in YbRh2Si2|Sven Friedemann,Niels Oeschler,Steffen Wirth,Cornelius Krellner,Christoph Geibel,Frank Steglich,Silke Paschen,Stefan Kirchner,Qimiao Si###
(972840, 972844)
Discontinuous Hall coefficient at the quantum critical point in YbRh2Si2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YbRh2Si2
###Discontinuous Hall coefficient at the quantum critical point in YbRh2Si2|Sven Friedemann,Niels Oeschler,Steffen Wirth,Cornelius Krellner,Christoph Geibel,Frank Steglich,Silke Paschen,Stefan Kirchner,Qimiao Si###
(972847, 972851)
 YbRh2Si2 is a model system for quantum criticality.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin-wave interference patterns created by spin-torque nano-oscillators for memory and computation|F. Macià,A. D. Kent,F. C. Hoppensteadt###
(973358, 973358)
Here we show how arrays of spin-torque nano-oscillators (ST<missing VAR>NO) can createpropagating spin-wave interference patterns of use for memory and computation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Spin-wave interference patterns created by spin-torque nano-oscillators for memory and computation|F. Macià,A. D. Kent,F. C. Hoppensteadt###
(973361, 973361)
Here we show how arrays of spin-torque nano-oscillators (ST<missing VAR>NO) can createpropagating spin-wave interference patterns of use for memory and computation.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Detection and quantification of inverse spin Hall effect from spin pumping in permalloy/normal metal bilayers|O. Mosendz,V. Vlaminck,J. E. Pearson,F. Y. Fradin,G. E. W. Bauer,S. D. Bader,A. Hoffmann###
(973579, 973579)
 Spin pumping is a mechanism that generates spin currents from ferromagneticresonance (FMR) over macroscopic interfacial areas, thereby enabling sensitivedetection of the inverse spin Hall effect that transforms spin into chargecurrents in non-magnetic conductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[306.0, 0.002, ',', 4],[311.0, 0.001, ',', 4],[323.0, 0.0001, ',', 4]

ISH
###Detection and quantification of inverse spin Hall effect from spin pumping in permalloy/normal metal bilayers|O. Mosendz,V. Vlaminck,J. E. Pearson,F. Y. Fradin,G. E. W. Bauer,S. D. Bader,A. Hoffmann###
(973789, 973791)
 We find good agreement between experimental data and atheoretical model that includes contributions from anisotropicmagnetoresistance (AMR) and inverse spin Hall effect (ISHE).
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 0.002, ',', 2],[99.0, 0.001, ',', 2],[111.0, 0.0001, ',', 2]

Pt
###Detection and quantification of inverse spin Hall effect from spin pumping in permalloy/normal metal bilayers|O. Mosendz,V. Vlaminck,J. E. Pearson,F. Y. Fradin,G. E. W. Bauer,S. D. Bader,A. Hoffmann###
(973856, 973856)
 The spinHall angles for Pt, Pd, Au and Mo were determined with high precision to be0.013pm0.002, 0.0064pm0.001, 0.0035pm0.0003 and -0.0005pm0.0001,respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 0.002, ',', 0],[34.0, 0.001, ',', 0],[46.0, 0.0001, ',', 0]

Pd
###Detection and quantification of inverse spin Hall effect from spin pumping in permalloy/normal metal bilayers|O. Mosendz,V. Vlaminck,J. E. Pearson,F. Y. Fradin,G. E. W. Bauer,S. D. Bader,A. Hoffmann###
(973859, 973859)
 The spinHall angles for Pt, Pd, Au and Mo were determined with high precision to be0.013pm0.002, 0.0064pm0.001, 0.0035pm0.0003 and -0.0005pm0.0001,respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 0.002, ',', 0],[31.0, 0.001, ',', 0],[43.0, 0.0001, ',', 0]

Au
###Detection and quantification of inverse spin Hall effect from spin pumping in permalloy/normal metal bilayers|O. Mosendz,V. Vlaminck,J. E. Pearson,F. Y. Fradin,G. E. W. Bauer,S. D. Bader,A. Hoffmann###
(973862, 973862)
 The spinHall angles for Pt, Pd, Au and Mo were determined with high precision to be0.013pm0.002, 0.0064pm0.001, 0.0035pm0.0003 and -0.0005pm0.0001,respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 0.002, ',', 0],[28.0, 0.001, ',', 0],[40.0, 0.0001, ',', 0]

Mo
###Detection and quantification of inverse spin Hall effect from spin pumping in permalloy/normal metal bilayers|O. Mosendz,V. Vlaminck,J. E. Pearson,F. Y. Fradin,G. E. W. Bauer,S. D. Bader,A. Hoffmann###
(973866, 973866)
 The spinHall angles for Pt, Pd, Au and Mo were determined with high precision to be0.013pm0.002, 0.0064pm0.001, 0.0035pm0.0003 and -0.0005pm0.0001,respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 0.002, ',', 0],[24.0, 0.001, ',', 0],[36.0, 0.0001, ',', 0]

C
###Impact of bicritical fluctuation on magnetocaloric phenomena in perovskite manganites|H. Sakai,Y. Taguchi,Y. Tokura###
(974548, 974548)
 Variation of magnetocaloric (M<missing VAR>C) effects has been systematically investigatedfor colossal magnetoresistive (CMR) manganites R<missing VAR>0.6Sr0.4MnO3 (R<missing VAR>La-Gd).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Impact of bicritical fluctuation on magnetocaloric phenomena in perovskite manganites|H. Sakai,Y. Taguchi,Y. Tokura###
(974569, 974569)
 Variation of magnetocaloric (M<missing VAR>C) effects has been systematically investigatedfor colossal magnetoresistive (CMR) manganites R<missing VAR>0.6Sr0.4MnO3 (R<missing VAR>La-Gd).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr0.4MnO3
###Impact of bicritical fluctuation on magnetocaloric phenomena in perovskite manganites|H. Sakai,Y. Taguchi,Y. Tokura###
(974578, 974582)
 Variation of magnetocaloric (M<missing VAR>C) effects has been systematically investigatedfor colossal magnetoresistive (CMR) manganites R<missing VAR>0.6Sr0.4MnO3 (R<missing VAR>La-Gd).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6818181818181818,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.22727272727272727,0,0,0,0,0,0,0,0,0,0,0,0,0.09090909090909091,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La
###Impact of bicritical fluctuation on magnetocaloric phenomena in perovskite manganites|H. Sakai,Y. Taguchi,Y. Tokura###
(974586, 974586)
 Variation of magnetocaloric (M<missing VAR>C) effects has been systematically investigatedfor colossal magnetoresistive (CMR) manganites R<missing VAR>0.6Sr0.4MnO3 (R<missing VAR>La-Gd).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Gd
###Impact of bicritical fluctuation on magnetocaloric phenomena in perovskite manganites|H. Sakai,Y. Taguchi,Y. Tokura###
(974588, 974588)
 Variation of magnetocaloric (M<missing VAR>C) effects has been systematically investigatedfor colossal magnetoresistive (CMR) manganites R<missing VAR>0.6Sr0.4MnO3 (R<missing VAR>La-Gd).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Impact of bicritical fluctuation on magnetocaloric phenomena in perovskite manganites|H. Sakai,Y. Taguchi,Y. Tokura###
(974592, 974592)
 As theone-electron bandwidth is reduced, the temperature profile of M<missing VAR>C effect, i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Impact of bicritical fluctuation on magnetocaloric phenomena in perovskite manganites|H. Sakai,Y. Taguchi,Y. Tokura###
(974617, 974617)
 As theone-electron bandwidth is reduced, the temperature profile of M<missing VAR>C effect, i.e.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Impact of bicritical fluctuation on magnetocaloric phenomena in perovskite manganites|H. Sakai,Y. Taguchi,Y. Tokura###
(974794, 974794)
 Model calculations have indicated that the fluctuationenhanced in the phase-competing region has a strong impact on such M<missing VAR>C features,which can be extensively controlled by the chemical composition.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Vortex ratchet reversal at fractional matching fields in kagomé-like array with symmetric pinning centers|D. Perez de Lara,A. Alija,E. M. Gonzalez,M. Velez,J. I. Martin,J. L. Vicent###
(974862, 974862)
 Arrays of Ni nanodots embedded in Nb superconducting films have beenfabricated by sputtering and electron beam lithography techniques.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nb
###Vortex ratchet reversal at fractional matching fields in kagomé-like array with symmetric pinning centers|D. Perez de Lara,A. Alija,E. M. Gonzalez,M. Velez,J. I. Martin,J. L. Vicent###
(974870, 974870)
 Arrays of Ni nanodots embedded in Nb superconducting films have beenfabricated by sputtering and electron beam lithography techniques.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Vortex ratchet reversal at fractional matching fields in kagomé-like array with symmetric pinning centers|D. Perez de Lara,A. Alija,E. M. Gonzalez,M. Velez,J. I. Martin,J. L. Vicent###
(974915, 974915)
 The arraysare periodic triangular lattices of circular Ni dots arranged in akagome<missing VAR>-like pattern with broken reflection symmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Vortex ratchet reversal at fractional matching fields in kagomé-like array with symmetric pinning centers|D. Perez de Lara,A. Alija,E. M. Gonzalez,M. Velez,J. I. Martin,J. L. Vicent###
(974965, 974965)
 Relevant behaviors arefound in the vortex lattice dynamics  i) At values lower than the firstinteger matching field, several fractional matching fields are present when thevortex lattice moves parallel or perpendicular to the reflection symmetry axisof the array showing a clear anisotropic character in the magnetoresistancecurves, ii) injecting an ac current perpendicular to the reflection symmetryaxis of the array yields an unidirectional motion of the vortex lattice(ratchet effect) as a result of the interaction between the whole vortexlattice and the asymmetric lattice of dots, iii) increasing the input currentamplitudes the ratchet effect changes polarity independently of matching fieldvalues.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs/AlGaAs
###Observation of a cyclotron harmonic spike in microwave-induced resistances in ultraclean GaAs/AlGaAs quantum wells|Yanhua Dai,R. R. Du,L. N. Pfeiffer,K. W. West###
(975236, 975241)
Observation of a cyclotron harmonic spike in microwave-induced resistances in ultraclean GaAs/AlGaAs quantum wells.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[39.0, 3, 'X', 1],[96.0, 2, 'nd', 2],[126.0, 300, '%', 2]

GaAs/AlGaAs
###Observation of a cyclotron harmonic spike in microwave-induced resistances in ultraclean GaAs/AlGaAs quantum wells|Yanhua Dai,R. R. Du,L. N. Pfeiffer,K. W. West###
(975289, 975294)
 We report the observation of a colossal, narrow resistance peak that arisesin ultraclean (mobility 3X107cm2/Vs) GaAs/AlGaAs quantum wells (Q<missing VAR>Ws) undermillimeterwave irradiation and a weak magnetic field.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[9.0, 3, 'X', 0],[43.0, 2, 'nd', 1],[73.0, 300, '%', 1]

O
###Observation of a cyclotron harmonic spike in microwave-induced resistances in ultraclean GaAs/AlGaAs quantum wells|Yanhua Dai,R. R. Du,L. N. Pfeiffer,K. W. West###
(975353, 975353)
 Such a spike issuperposed on the 2nd harmonic microwave-induced resistance oscillations (MIRO)but having an amplitude > 300% of the MIRO, and a typical FWHM<missing VAR> 50 m<missing VAR>K,comparable with the Landau level width.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 3, 'X', 1],[16.0, 2, 'nd', 0],[14.0, 300, '%', 0]

O
###Observation of a cyclotron harmonic spike in microwave-induced resistances in ultraclean GaAs/AlGaAs quantum wells|Yanhua Dai,R. R. Du,L. N. Pfeiffer,K. W. West###
(975377, 975377)
 Such a spike issuperposed on the 2nd harmonic microwave-induced resistance oscillations (MIRO)but having an amplitude > 300% of the MIRO, and a typical FWHM<missing VAR> 50 m<missing VAR>K,comparable with the Landau level width.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 3, 'X', 1],[40.0, 2, 'nd', 0],[10.0, 300, '%', 0]

FWH
###Observation of a cyclotron harmonic spike in microwave-induced resistances in ultraclean GaAs/AlGaAs quantum wells|Yanhua Dai,R. R. Du,L. N. Pfeiffer,K. W. West###
(975386, 975388)
 Such a spike issuperposed on the 2nd harmonic microwave-induced resistance oscillations (MIRO)but having an amplitude > 300% of the MIRO, and a typical FWHM<missing VAR> 50 m<missing VAR>K,comparable with the Landau level width.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 3, 'X', 1],[49.0, 2, 'nd', 0],[19.0, 300, '%', 0]

K
###Observation of a cyclotron harmonic spike in microwave-induced resistances in ultraclean GaAs/AlGaAs quantum wells|Yanhua Dai,R. R. Du,L. N. Pfeiffer,K. W. West###
(975394, 975394)
 Such a spike issuperposed on the 2nd harmonic microwave-induced resistance oscillations (MIRO)but having an amplitude > 300% of the MIRO, and a typical FWHM<missing VAR> 50 m<missing VAR>K,comparable with the Landau level width.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 3, 'X', 1],[57.0, 2, 'nd', 0],[27.0, 300, '%', 0]

Co2TiSn
###Electronic structure of fully epitaxial Co2TiSn thin films|Markus Meinert,Jan-Michael Schmalhorst,Hendrik Wulfmeier,Günter Reiss,Elke Arenholz,Tanja Graf,Claudia Felser###
(975551, 975554)
Electronic structure of fully epitaxial Co2TiSn thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Electronic structure of fully epitaxial Co2TiSn thin films|Markus Meinert,Jan-Michael Schmalhorst,Hendrik Wulfmeier,Günter Reiss,Elke Arenholz,Tanja Graf,Claudia Felser###
(975561, 975561)
 In this article we report on the properties of thin films of the full Heuslercompound Co2TiSn prepared by D<missing VAR>C magnetron co-sputtering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co2TiSn
###Electronic structure of fully epitaxial Co2TiSn thin films|Markus Meinert,Jan-Michael Schmalhorst,Hendrik Wulfmeier,Günter Reiss,Elke Arenholz,Tanja Graf,Claudia Felser###
(975594, 975597)
 In this article we report on the properties of thin films of the full Heuslercompound Co2TiSn prepared by D<missing VAR>C magnetron co-sputtering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Electronic structure of fully epitaxial Co2TiSn thin films|Markus Meinert,Jan-Michael Schmalhorst,Hendrik Wulfmeier,Günter Reiss,Elke Arenholz,Tanja Graf,Claudia Felser###
(975604, 975604)
 In this article we report on the properties of thin films of the full Heuslercompound Co2TiSn prepared by D<missing VAR>C magnetron co-sputtering.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Electronic structure of fully epitaxial Co2TiSn thin films|Markus Meinert,Jan-Michael Schmalhorst,Hendrik Wulfmeier,Günter Reiss,Elke Arenholz,Tanja Graf,Claudia Felser###
(975633, 975634)
 Fully epitaxial,stoichiometric films were obtained by deposition on MgO (001) substrates atsubstrate temperatures above 600degC.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Electronic structure of fully epitaxial Co2TiSn thin films|Markus Meinert,Jan-Michael Schmalhorst,Hendrik Wulfmeier,Günter Reiss,Elke Arenholz,Tanja Graf,Claudia Felser###
(975653, 975653)
 Fully epitaxial,stoichiometric films were obtained by deposition on MgO (001) substrates atsubstrate temperatures above 600degC.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Electronic structure of fully epitaxial Co2TiSn thin films|Markus Meinert,Jan-Michael Schmalhorst,Hendrik Wulfmeier,Günter Reiss,Elke Arenholz,Tanja Graf,Claudia Felser###
(975751, 975751)
 The films are weakly ferrimagnetic, withnearly 1 muB on the Co atoms, and a small antiparallel Ti moment, inagreement with theoretical expectations.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Electronic structure of fully epitaxial Co2TiSn thin films|Markus Meinert,Jan-Michael Schmalhorst,Hendrik Wulfmeier,Günter Reiss,Elke Arenholz,Tanja Graf,Claudia Felser###
(975757, 975757)
 The films are weakly ferrimagnetic, withnearly 1 muB on the Co atoms, and a small antiparallel Ti moment, inagreement with theoretical expectations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ti
###Electronic structure of fully epitaxial Co2TiSn thin films|Markus Meinert,Jan-Michael Schmalhorst,Hendrik Wulfmeier,Günter Reiss,Elke Arenholz,Tanja Graf,Claudia Felser###
(975770, 975770)
 The films are weakly ferrimagnetic, withnearly 1 muB on the Co atoms, and a small antiparallel Ti moment, inagreement with theoretical expectations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Electronic structure of fully epitaxial Co2TiSn thin films|Markus Meinert,Jan-Michael Schmalhorst,Hendrik Wulfmeier,Günter Reiss,Elke Arenholz,Tanja Graf,Claudia Felser###
(975806, 975806)
 From comparison of x<missing VAR>-ray absorptionspectra on the Co L<missing VAR>3/L<missing VAR>2 edges, including circular and linear magneticdichroism, with ab initio calculations of the x<missing VAR>-ray absorption and circulardichroism spectra we infer that the electronic structure of Co2TiSn hasessentially non-localized character.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co2TiSn
###Electronic structure of fully epitaxial Co2TiSn thin films|Markus Meinert,Jan-Michael Schmalhorst,Hendrik Wulfmeier,Günter Reiss,Elke Arenholz,Tanja Graf,Claudia Felser###
(975872, 975875)
 From comparison of x<missing VAR>-ray absorptionspectra on the Co L<missing VAR>3/L<missing VAR>2 edges, including circular and linear magneticdichroism, with ab initio calculations of the x<missing VAR>-ray absorption and circulardichroism spectra we infer that the electronic structure of Co2TiSn hasessentially non-localized character.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TiN
###Nanopattern-stimulated superconductor-insulator transition in thin TiN films|T. I. Baturina,V. M. Vinokur,A. Yu. Mironov,N. M. Chtchelkatchev,D. A. Nasimov,A. V. Latyshev###
(976227, 976228)
Nanopattern-stimulated superconductor-insulator transition in thin TiN films.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TiN
###Nanopattern-stimulated superconductor-insulator transition in thin TiN films|T. I. Baturina,V. M. Vinokur,A. Yu. Mironov,N. M. Chtchelkatchev,D. A. Nasimov,A. V. Latyshev###
(976274, 976275)
 We present the results of the comparative study of the influence of disorderon transport properties in continuous and nanoperforated TiN films.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TiN
###Nanopattern-stimulated superconductor-insulator transition in thin TiN films|T. I. Baturina,V. M. Vinokur,A. Yu. Mironov,N. M. Chtchelkatchev,D. A. Nasimov,A. V. Latyshev###
(976295, 976296)
 We showthat nanopatterning turns a thin TiN film into an array of superconducting weaklinks and stimulates both, the disorder- and magnetic field-drivensuperconductor-to-insulator transitions, pushing them to lower degree ofdisorder.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Orbital Order, Metal Insulator Transition, and Magnetoresistance-Effect in the two-orbital Hubbard model|Robert Peters,Norio Kawakami,Thomas Pruschke###
(976616, 976616)
 At this particular filling the model exhibits two differentlong-range order mechanisms, namely orbital order and ferromagnetism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Anomalous galvanomagnetism, cyclotron resonance and microwave spectroscopy of topological insulators|G. Tkachov,E. M. Hankiewicz###
(977020, 977020)
 In particular, we find linear bulk dc magnetoresistivity and aquadratic field dependence of the Hall angle, shifted rf cyclotron resonance,nonanalytic microwave transmission coefficient and saturation of the Faradayrotation angle with increasing magnetic field or wave frequency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Overtaking while approaching equilibrium|P. Chaddah,S. Dash,Kranti Kumar,A. Banerjee###
(977260, 977260)
 Inthe extensively studied colossal magnetoresistance manganites, cooling in amagnetic field (H) often results in an inhomogeneous mixture of transformedequilibrium phase and a kinetically arrested non-equilibrium phase whichrelaxes slowly towards equilibrium at fixed H and temperature (T).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(H)
###Overtaking while approaching equilibrium|P. Chaddah,S. Dash,Kranti Kumar,A. Banerjee###
(977287, 977289)
 Inthe extensively studied colossal magnetoresistance manganites, cooling in amagnetic field (H) often results in an inhomogeneous mixture of transformedequilibrium phase and a kinetically arrested non-equilibrium phase whichrelaxes slowly towards equilibrium at fixed H and temperature (T).
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Overtaking while approaching equilibrium|P. Chaddah,S. Dash,Kranti Kumar,A. Banerjee###
(977341, 977341)
 Inthe extensively studied colossal magnetoresistance manganites, cooling in amagnetic field (H) often results in an inhomogeneous mixture of transformedequilibrium phase and a kinetically arrested non-equilibrium phase whichrelaxes slowly towards equilibrium at fixed H and temperature (T).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Overtaking while approaching equilibrium|P. Chaddah,S. Dash,Kranti Kumar,A. Banerjee###
(977375, 977375)
 Here we showthat the magnetization decay rate at the same H and T<missing VAR> is larger for the statethat was initially farther from equilibrium, and it continues to relax fastereven after these have become equal.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin Transfer Torque and Tunneling Magnetoresistance Dependences on the Finite Bias Voltages and Insulator Barrier Energy|Chun-Yeol You,Jae-Ho Han,Hyun-Woo Lee###
(977536, 977536)
 We investigate the dependence of perpendicular and parallel spin transfertorque (STT) and tunneling magnetoresistance (TMR) on the insulator barrierenergy in the magnetic tunnel junction (MTJ).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin Transfer Torque and Tunneling Magnetoresistance Dependences on the Finite Bias Voltages and Insulator Barrier Energy|Chun-Yeol You,Jae-Ho Han,Hyun-Woo Lee###
(977632, 977632)
 We employed single orbit tightbinding model combined with the Keldysh non-equilibrium Greens<missing VAR> function methodin order to calculate the perpendicular and parallel STT, and TMR in MTJ withthe finite bias voltages.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin Transfer Torque and Tunneling Magnetoresistance Dependences on the Finite Bias Voltages and Insulator Barrier Energy|Chun-Yeol You,Jae-Ho Han,Hyun-Woo Lee###
(977667, 977667)
 The dependences of STT and TMR on the insulatorbarrier energy are calculated for the semi-infinite half metallic ferromagneticelectrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin Transfer Torque and Tunneling Magnetoresistance Dependences on the Finite Bias Voltages and Insulator Barrier Energy|Chun-Yeol You,Jae-Ho Han,Hyun-Woo Lee###
(977728, 977728)
 We find that perfect linear relation between the parallel STT andthe tunneling current for the wide range of the insulator barrier energy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe2
###Abrupt recovery of Fermi-liquid transport by the c-axis collapse in CaFe2(As1-xPx)2 single crystals|S. Kasahara,T. Shibauchi,Y. Nakai,K. Hashimoto,H. Ikeda,T. Terashima,Y. Matsuda###
(977835, 977836)
Abrupt recovery of Fermi-liquid transport by the c<missing VAR>-axis collapse in CaFe2(As1-xPx)2 single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 100, ',', 1],[96.0, 9, '%', 2]

As1-x
###Abrupt recovery of Fermi-liquid transport by the c-axis collapse in CaFe2(As1-xPx)2 single crystals|S. Kasahara,T. Shibauchi,Y. Nakai,K. Hashimoto,H. Ikeda,T. Terashima,Y. Matsuda###
(977838, 977841)
Abrupt recovery of Fermi-liquid transport by the c<missing VAR>-axis collapse in CaFe2(As1-xPx)2 single crystals.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[69.0, 100, ',', 1],[91.0, 9, '%', 2]

Fe2
###Abrupt recovery of Fermi-liquid transport by the c-axis collapse in CaFe2(As1-xPx)2 single crystals|S. Kasahara,T. Shibauchi,Y. Nakai,K. Hashimoto,H. Ikeda,T. Terashima,Y. Matsuda###
(977858, 977859)
 Single crystals of CaFe2(As1-xPx)2 are found to exhibit thetetragonal (T) to collapsed-tetragonal (cT) transition at T<missing VAR>rm cTlesssim100,K for x<missing VAR>>0.05.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 100, ',', 0],[73.0, 9, '%', 1]

As1-xP
###Abrupt recovery of Fermi-liquid transport by the c-axis collapse in CaFe2(As1-xPx)2 single crystals|S. Kasahara,T. Shibauchi,Y. Nakai,K. Hashimoto,H. Ikeda,T. Terashima,Y. Matsuda###
(977861, 977865)
 Single crystals of CaFe2(As1-xPx)2 are found to exhibit thetetragonal (T) to collapsed-tetragonal (cT) transition at T<missing VAR>rm cTlesssim100,K for x<missing VAR>>0.05.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[45.0, 100, ',', 0],[67.0, 9, '%', 1]

K
###Abrupt recovery of Fermi-liquid transport by the c-axis collapse in CaFe2(As1-xPx)2 single crystals|S. Kasahara,T. Shibauchi,Y. Nakai,K. Hashimoto,H. Ikeda,T. Terashima,Y. Matsuda###
(977912, 977912)
 Single crystals of CaFe2(As1-xPx)2 are found to exhibit thetetragonal (T) to collapsed-tetragonal (cT) transition at T<missing VAR>rm cTlesssim100,K for x<missing VAR>>0.05.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 100, ',', 0],[20.0, 9, '%', 1]

In
###Abrupt recovery of Fermi-liquid transport by the c-axis collapse in CaFe2(As1-xPx)2 single crystals|S. Kasahara,T. Shibauchi,Y. Nakai,K. Hashimoto,H. Ikeda,T. Terashima,Y. Matsuda###
(977971, 977971)
 In sharp contrast to the superconducting T<missing VAR> phase ofAFe2(As1-xPx)2 (A Ba, Sr), where the anomalous non-Fermiliquid transport properties are observed, the resistivity, Hall coefficient,and magnetoresistance data in the Ca-based system all indicate that thestandard Fermi liquid behaviors are recovered abruptly below T<missing VAR>rm cT, andthe superconductivity disappears completely.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 100, ',', 2],[39.0, 9, '%', 1]

Fe2
###Abrupt recovery of Fermi-liquid transport by the c-axis collapse in CaFe2(As1-xPx)2 single crystals|S. Kasahara,T. Shibauchi,Y. Nakai,K. Hashimoto,H. Ikeda,T. Terashima,Y. Matsuda###
(977991, 977992)
 In sharp contrast to the superconducting T<missing VAR> phase ofAFe2(As1-xPx)2 (A Ba, Sr), where the anomalous non-Fermiliquid transport properties are observed, the resistivity, Hall coefficient,and magnetoresistance data in the Ca-based system all indicate that thestandard Fermi liquid behaviors are recovered abruptly below T<missing VAR>rm cT, andthe superconductivity disappears completely.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 100, ',', 2],[59.0, 9, '%', 1]

As1-xP
###Abrupt recovery of Fermi-liquid transport by the c-axis collapse in CaFe2(As1-xPx)2 single crystals|S. Kasahara,T. Shibauchi,Y. Nakai,K. Hashimoto,H. Ikeda,T. Terashima,Y. Matsuda###
(977994, 977998)
 In sharp contrast to the superconducting T<missing VAR> phase ofAFe2(As1-xPx)2 (A Ba, Sr), where the anomalous non-Fermiliquid transport properties are observed, the resistivity, Hall coefficient,and magnetoresistance data in the Ca-based system all indicate that thestandard Fermi liquid behaviors are recovered abruptly below T<missing VAR>rm cT, andthe superconductivity disappears completely.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[84.0, 100, ',', 2],[62.0, 9, '%', 1]

Ba
###Abrupt recovery of Fermi-liquid transport by the c-axis collapse in CaFe2(As1-xPx)2 single crystals|S. Kasahara,T. Shibauchi,Y. Nakai,K. Hashimoto,H. Ikeda,T. Terashima,Y. Matsuda###
(978006, 978006)
 In sharp contrast to the superconducting T<missing VAR> phase ofAFe2(As1-xPx)2 (A Ba, Sr), where the anomalous non-Fermiliquid transport properties are observed, the resistivity, Hall coefficient,and magnetoresistance data in the Ca-based system all indicate that thestandard Fermi liquid behaviors are recovered abruptly below T<missing VAR>rm cT, andthe superconductivity disappears completely.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 100, ',', 2],[74.0, 9, '%', 1]

Sr
###Abrupt recovery of Fermi-liquid transport by the c-axis collapse in CaFe2(As1-xPx)2 single crystals|S. Kasahara,T. Shibauchi,Y. Nakai,K. Hashimoto,H. Ikeda,T. Terashima,Y. Matsuda###
(978009, 978009)
 In sharp contrast to the superconducting T<missing VAR> phase ofAFe2(As1-xPx)2 (A Ba, Sr), where the anomalous non-Fermiliquid transport properties are observed, the resistivity, Hall coefficient,and magnetoresistance data in the Ca-based system all indicate that thestandard Fermi liquid behaviors are recovered abruptly below T<missing VAR>rm cT, andthe superconductivity disappears completely.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 100, ',', 2],[77.0, 9, '%', 1]

Ca
###Abrupt recovery of Fermi-liquid transport by the c-axis collapse in CaFe2(As1-xPx)2 single crystals|S. Kasahara,T. Shibauchi,Y. Nakai,K. Hashimoto,H. Ikeda,T. Terashima,Y. Matsuda###
(978056, 978056)
 In sharp contrast to the superconducting T<missing VAR> phase ofAFe2(As1-xPx)2 (A Ba, Sr), where the anomalous non-Fermiliquid transport properties are observed, the resistivity, Hall coefficient,and magnetoresistance data in the Ca-based system all indicate that thestandard Fermi liquid behaviors are recovered abruptly below T<missing VAR>rm cT, andthe superconductivity disappears completely.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 100, ',', 2],[124.0, 9, '%', 1]

Fe
###Abrupt recovery of Fermi-liquid transport by the c-axis collapse in CaFe2(As1-xPx)2 single crystals|S. Kasahara,T. Shibauchi,Y. Nakai,K. Hashimoto,H. Ikeda,T. Terashima,Y. Matsuda###
(978152, 978152)
 The intimate link between thesuperconductivity and the non-Fermi liquid transport enlightens the essentialrole of interband-associated fluctuation effects in Fe-pnictides.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[242.0, 100, ',', 3],[220.0, 9, '%', 2]

MnBi
###Transport Spin Polarization of High-Curie Temperature MnBi Films|P. Kharel,P. Thapa,P. Lukashev,R. F. Sabirianov,E. Y. Tsymbal,D. J. Sellmyer,B. Nadgorny###
(978179, 978180)
Transport Spin Polarization of High-Curie Temperature MnBi Films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 628, 'K', 1],[136.0, 1, '%', 3]

MnBi
###Transport Spin Polarization of High-Curie Temperature MnBi Films|P. Kharel,P. Thapa,P. Lukashev,R. F. Sabirianov,E. Y. Tsymbal,D. J. Sellmyer,B. Nadgorny###
(978217, 978218)
 We report on the study of the structural, magnetic and transport propertiesof highly textured MnBi films with the Curie temperature of 628K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 628, 'K', 0],[98.0, 1, '%', 2]

In
###Transport Spin Polarization of High-Curie Temperature MnBi Films|P. Kharel,P. Thapa,P. Lukashev,R. F. Sabirianov,E. Y. Tsymbal,D. J. Sellmyer,B. Nadgorny###
(978234, 978234)
 In additionto detailed measurements of resistivity and magnetization, we measure transportspin polarization of MnBi by Andreev reflection spectroscopy and perform fullyrelativistic band structure calculations of MnBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 628, 'K', 1],[82.0, 1, '%', 1]

MnBi
###Transport Spin Polarization of High-Curie Temperature MnBi Films|P. Kharel,P. Thapa,P. Lukashev,R. F. Sabirianov,E. Y. Tsymbal,D. J. Sellmyer,B. Nadgorny###
(978267, 978268)
 In additionto detailed measurements of resistivity and magnetization, we measure transportspin polarization of MnBi by Andreev reflection spectroscopy and perform fullyrelativistic band structure calculations of MnBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 628, 'K', 1],[48.0, 1, '%', 1]

MnBi
###Transport Spin Polarization of High-Curie Temperature MnBi Films|P. Kharel,P. Thapa,P. Lukashev,R. F. Sabirianov,E. Y. Tsymbal,D. J. Sellmyer,B. Nadgorny###
(978295, 978296)
 In additionto detailed measurements of resistivity and magnetization, we measure transportspin polarization of MnBi by Andreev reflection spectroscopy and perform fullyrelativistic band structure calculations of MnBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 628, 'K', 1],[20.0, 1, '%', 1]

MnBi
###Transport Spin Polarization of High-Curie Temperature MnBi Films|P. Kharel,P. Thapa,P. Lukashev,R. F. Sabirianov,E. Y. Tsymbal,D. J. Sellmyer,B. Nadgorny###
(978351, 978352)
 A spin polarization from51pm1 to 63pm1% is observed, consistent with the calculations and with anobservation of a large magnetoresistance in MnBi contacts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 628, 'K', 2],[35.0, 1, '%', 0]

MnBi
###Transport Spin Polarization of High-Curie Temperature MnBi Films|P. Kharel,P. Thapa,P. Lukashev,R. F. Sabirianov,E. Y. Tsymbal,D. J. Sellmyer,B. Nadgorny###
(978426, 978427)
 The band structurecalculations indicate that, in spite of almost identical densities of states atthe Fermi energy, the large disparity in the Fermi velocities leads to hightransport spin polarization of MnBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[195.0, 628, 'K', 3],[110.0, 1, '%', 1]

Ba(FeAs)2
###Electron and hole Dirac cone states in-pairs in Ba(FeAs)$_2$ confirmed by magnetoresistance|Khuong K. Huynh,Yoichi Tanabe,Katsumi Tanigaki###
(978482, 978487)
Electron and hole Dirac cone states in-pairs in Ba(FeAs)2 confirmed by magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ba(FeAs)2
###Electron and hole Dirac cone states in-pairs in Ba(FeAs)$_2$ confirmed by magnetoresistance|Khuong K. Huynh,Yoichi Tanabe,Katsumi Tanigaki###
(978518, 978523)
 The quantum transport of Dirac cone states in the iron pnictide Ba(FeAs)2with a d<missing VAR>-,multiband system is studied by using single crystal samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Low frequency noise characteristics of sub-micron magnetic tunnel junctions|B. Zhong,Y. Chen,S. Garzon,T. M. Crawford,R. A. Webb###
(978870, 978870)
 In mostcases, a Lorentzian-like shape with characteristic time between 0.1 and 10 msis observed, which indicates only a small number of fluctuators contribute tothe measured noise.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 200, 'kHz', 1],[36.0, 10, 'Kelvin', 1],[23.0, 0.1, 'and', 0],[24.0, 10, 'ms', 0]

At
###Low frequency noise characteristics of sub-micron magnetic tunnel junctions|B. Zhong,Y. Chen,S. Garzon,T. M. Crawford,R. A. Webb###
(979009, 979009)
 At small fields, where the noise from thefree layer is dominant, a linear relation between the measured noise andangular magnetoresistance susceptibility can be established.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[202.0, 200, 'kHz', 3],[175.0, 10, 'Kelvin', 3],[116.0, 0.1, 'and', 2],[115.0, 10, 'ms', 2]

I
###Robustness of the magnetoresistance of nanoparticle arrays|V. Estevez,E. Bascones###
(979425, 979425)
 Recent work has found that the interplay between spin accumulation andCoulomb blockade in nanoparticle arrays results in peaky I-V and tunnelingmagnetoresistance (TMR) curves and in huge values of the TMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Robustness of the magnetoresistance of nanoparticle arrays|V. Estevez,E. Bascones###
(979427, 979427)
 Recent work has found that the interplay between spin accumulation andCoulomb blockade in nanoparticle arrays results in peaky I-V and tunnelingmagnetoresistance (TMR) curves and in huge values of the TMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Robustness of the magnetoresistance of nanoparticle arrays|V. Estevez,E. Bascones###
(979610, 979610)
 A different polarization in the electrodesmodifies the peak shape in the I-V and TMR curves but not their order ofmagnitude.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Robustness of the magnetoresistance of nanoparticle arrays|V. Estevez,E. Bascones###
(979612, 979612)
 A different polarization in the electrodesmodifies the peak shape in the I-V and TMR curves but not their order ofmagnitude.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

IrMn
###A Study of Spin-Flipping in Sputtered IrMn using Py-based Exchange-Biased Spin-Valves|R. Acharyya,H. Y. T. Nguyen,W. P. Pratt Jr.,J. Bass###
(979744, 979745)
A Study of Spin-Flipping in Sputtered IrMn using Py-based Exchange-Biased Spin-Valves.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 30, 'nm', 1],[234.0, 5, 'nm', 2],[350.0, 1, 'nm', 4]

IrMn
###A Study of Spin-Flipping in Sputtered IrMn using Py-based Exchange-Biased Spin-Valves|R. Acharyya,H. Y. T. Nguyen,W. P. Pratt Jr.,J. Bass###
(979776, 979777)
 To study spin flipping within the antiferromagnet IrMn, we extended priorCurrent-Perpendicular-to-Plane (CPP) Giant Magnetoresistance (GMR) studies ofPy-based exchange-biased-spin-valves containing IrMn inserts to thicker IrMnlayers-5 nm less than or equal to t<missing VAR>(IrMn) less than or equal to 30 nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 30, 'nm', 0],[202.0, 5, 'nm', 1],[318.0, 1, 'nm', 3]

(CPP)
###A Study of Spin-Flipping in Sputtered IrMn using Py-based Exchange-Biased Spin-Valves|R. Acharyya,H. Y. T. Nguyen,W. P. Pratt Jr.,J. Bass###
(979795, 979799)
 To study spin flipping within the antiferromagnet IrMn, we extended priorCurrent-Perpendicular-to-Plane (CPP) Giant Magnetoresistance (GMR) studies ofPy-based exchange-biased-spin-valves containing IrMn inserts to thicker IrMnlayers-5 nm less than or equal to t<missing VAR>(IrMn) less than or equal to 30 nm.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 30, 'nm', 0],[180.0, 5, 'nm', 1],[296.0, 1, 'nm', 3]

IrMn
###A Study of Spin-Flipping in Sputtered IrMn using Py-based Exchange-Biased Spin-Valves|R. Acharyya,H. Y. T. Nguyen,W. P. Pratt Jr.,J. Bass###
(979830, 979831)
 To study spin flipping within the antiferromagnet IrMn, we extended priorCurrent-Perpendicular-to-Plane (CPP) Giant Magnetoresistance (GMR) studies ofPy-based exchange-biased-spin-valves containing IrMn inserts to thicker IrMnlayers-5 nm less than or equal to t<missing VAR>(IrMn) less than or equal to 30 nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 30, 'nm', 0],[148.0, 5, 'nm', 1],[264.0, 1, 'nm', 3]

IrMn
###A Study of Spin-Flipping in Sputtered IrMn using Py-based Exchange-Biased Spin-Valves|R. Acharyya,H. Y. T. Nguyen,W. P. Pratt Jr.,J. Bass###
(979839, 979840)
 To study spin flipping within the antiferromagnet IrMn, we extended priorCurrent-Perpendicular-to-Plane (CPP) Giant Magnetoresistance (GMR) studies ofPy-based exchange-biased-spin-valves containing IrMn inserts to thicker IrMnlayers-5 nm less than or equal to t<missing VAR>(IrMn) less than or equal to 30 nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 30, 'nm', 0],[139.0, 5, 'nm', 1],[255.0, 1, 'nm', 3]

(IrMn)
###A Study of Spin-Flipping in Sputtered IrMn using Py-based Exchange-Biased Spin-Valves|R. Acharyya,H. Y. T. Nguyen,W. P. Pratt Jr.,J. Bass###
(979860, 979863)
 To study spin flipping within the antiferromagnet IrMn, we extended priorCurrent-Perpendicular-to-Plane (CPP) Giant Magnetoresistance (GMR) studies ofPy-based exchange-biased-spin-valves containing IrMn inserts to thicker IrMnlayers-5 nm less than or equal to t<missing VAR>(IrMn) less than or equal to 30 nm.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 30, 'nm', 0],[116.0, 5, 'nm', 1],[232.0, 1, 'nm', 3]

P
###A Study of Spin-Flipping in Sputtered IrMn using Py-based Exchange-Biased Spin-Valves|R. Acharyya,H. Y. T. Nguyen,W. P. Pratt Jr.,J. Bass###
(979891, 979891)
Unexpectedly, ADeltaR<missing VAR>  A[R<missing VAR>(AP) - R<missing VAR>(P)]--the difference in specificresistance between the anti-parallel (AP) and parallel (P) magnetic states ofthe two Py layers-did not decrease with increasing t<missing VAR>(IrMn), for t<missing VAR>(IrMn) greaterthan 5 nm, but rather became constant to within our measuring uncertainty.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 30, 'nm', 1],[88.0, 5, 'nm', 0],[204.0, 1, 'nm', 2]

(P)
###A Study of Spin-Flipping in Sputtered IrMn using Py-based Exchange-Biased Spin-Valves|R. Acharyya,H. Y. T. Nguyen,W. P. Pratt Jr.,J. Bass###
(979897, 979899)
Unexpectedly, ADeltaR<missing VAR>  A[R<missing VAR>(AP) - R<missing VAR>(P)]--the difference in specificresistance between the anti-parallel (AP) and parallel (P) magnetic states ofthe two Py layers-did not decrease with increasing t<missing VAR>(IrMn), for t<missing VAR>(IrMn) greaterthan 5 nm, but rather became constant to within our measuring uncertainty.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 30, 'nm', 1],[80.0, 5, 'nm', 0],[196.0, 1, 'nm', 2]

P
###A Study of Spin-Flipping in Sputtered IrMn using Py-based Exchange-Biased Spin-Valves|R. Acharyya,H. Y. T. Nguyen,W. P. Pratt Jr.,J. Bass###
(979924, 979924)
Unexpectedly, ADeltaR<missing VAR>  A[R<missing VAR>(AP) - R<missing VAR>(P)]--the difference in specificresistance between the anti-parallel (AP) and parallel (P) magnetic states ofthe two Py layers-did not decrease with increasing t<missing VAR>(IrMn), for t<missing VAR>(IrMn) greaterthan 5 nm, but rather became constant to within our measuring uncertainty.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 30, 'nm', 1],[55.0, 5, 'nm', 0],[171.0, 1, 'nm', 2]

(P)
###A Study of Spin-Flipping in Sputtered IrMn using Py-based Exchange-Biased Spin-Valves|R. Acharyya,H. Y. T. Nguyen,W. P. Pratt Jr.,J. Bass###
(979931, 979933)
Unexpectedly, ADeltaR<missing VAR>  A[R<missing VAR>(AP) - R<missing VAR>(P)]--the difference in specificresistance between the anti-parallel (AP) and parallel (P) magnetic states ofthe two Py layers-did not decrease with increasing t<missing VAR>(IrMn), for t<missing VAR>(IrMn) greaterthan 5 nm, but rather became constant to within our measuring uncertainty.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 30, 'nm', 1],[46.0, 5, 'nm', 0],[162.0, 1, 'nm', 2]

(IrMn)
###A Study of Spin-Flipping in Sputtered IrMn using Py-based Exchange-Biased Spin-Valves|R. Acharyya,H. Y. T. Nguyen,W. P. Pratt Jr.,J. Bass###
(979961, 979964)
Unexpectedly, ADeltaR<missing VAR>  A[R<missing VAR>(AP) - R<missing VAR>(P)]--the difference in specificresistance between the anti-parallel (AP) and parallel (P) magnetic states ofthe two Py layers-did not decrease with increasing t<missing VAR>(IrMn), for t<missing VAR>(IrMn) greaterthan 5 nm, but rather became constant to within our measuring uncertainty.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 30, 'nm', 1],[15.0, 5, 'nm', 0],[131.0, 1, 'nm', 2]

(IrMn)
###A Study of Spin-Flipping in Sputtered IrMn using Py-based Exchange-Biased Spin-Valves|R. Acharyya,H. Y. T. Nguyen,W. P. Pratt Jr.,J. Bass###
(979970, 979973)
Unexpectedly, ADeltaR<missing VAR>  A[R<missing VAR>(AP) - R<missing VAR>(P)]--the difference in specificresistance between the anti-parallel (AP) and parallel (P) magnetic states ofthe two Py layers-did not decrease with increasing t<missing VAR>(IrMn), for t<missing VAR>(IrMn) greaterthan 5 nm, but rather became constant to within our measuring uncertainty.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 30, 'nm', 1],[6.0, 5, 'nm', 0],[122.0, 1, 'nm', 2]

(IrMn)
###A Study of Spin-Flipping in Sputtered IrMn using Py-based Exchange-Biased Spin-Valves|R. Acharyya,H. Y. T. Nguyen,W. P. Pratt Jr.,J. Bass###
(980056, 980059)
 Theconstant complicates isolating the spin-diffusion length, lsf(IrMn), in bulkIrMn, but lsf(IrMn) is probably short, less than or equal to 1 nm.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[182.0, 30, 'nm', 3],[77.0, 5, 'nm', 2],[36.0, 1, 'nm', 0]

IrMn
###A Study of Spin-Flipping in Sputtered IrMn using Py-based Exchange-Biased Spin-Valves|R. Acharyya,H. Y. T. Nguyen,W. P. Pratt Jr.,J. Bass###
(980067, 980068)
 Theconstant complicates isolating the spin-diffusion length, lsf(IrMn), in bulkIrMn, but lsf(IrMn) is probably short, less than or equal to 1 nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[193.0, 30, 'nm', 3],[88.0, 5, 'nm', 2],[27.0, 1, 'nm', 0]

(IrMn)
###A Study of Spin-Flipping in Sputtered IrMn using Py-based Exchange-Biased Spin-Valves|R. Acharyya,H. Y. T. Nguyen,W. P. Pratt Jr.,J. Bass###
(980074, 980077)
 Theconstant complicates isolating the spin-diffusion length, lsf(IrMn), in bulkIrMn, but lsf(IrMn) is probably short, less than or equal to 1 nm.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[200.0, 30, 'nm', 3],[95.0, 5, 'nm', 2],[18.0, 1, 'nm', 0]

FeMn
###A Study of Spin-Flipping in Sputtered IrMn using Py-based Exchange-Biased Spin-Valves|R. Acharyya,H. Y. T. Nguyen,W. P. Pratt Jr.,J. Bass###
(980109, 980110)
 Similarresults were found with FeMn.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[235.0, 30, 'nm', 4],[130.0, 5, 'nm', 3],[14.0, 1, 'nm', 1]

Co/Ni
###Conduction Electron Scattering and Spin-Flipping at Sputtered Co/Ni Interfaces|H. Y. T. Nguyen,R. Acharyya,E. Huey,B. Richard,R. Loloee,W. P. Pratt Jr.,J. Bass,Shuai Wang,Ke Xia###
(980137, 980139)
Conduction Electron Scattering and Spin-Flipping at Sputtered Co/Ni Interfaces.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[252.0, 0.07, 'f', 2],[257.0, 2, ',', 2],[320.0, 2, 'and', 3],[321.0, 4, 'monolayers', 3]

CPP
###Conduction Electron Scattering and Spin-Flipping at Sputtered Co/Ni Interfaces|H. Y. T. Nguyen,R. Acharyya,E. Huey,B. Richard,R. Loloee,W. P. Pratt Jr.,J. Bass,Shuai Wang,Ke Xia###
(980155, 980157)
 Current-perpendicular-to-plane magnetoresistance (CPP-MR) measurements let usquantify conduction electron scattering and spin-flipping at a sputteredferromagnetic/ferromagnetic (F1/F2  Co/Ni) interface, with importantconsequences for CPP-MR and spin-torque experiments with perpendicularanisotropy.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[234.0, 0.07, 'f', 1],[239.0, 2, ',', 1],[302.0, 2, 'and', 2],[303.0, 4, 'monolayers', 2]

F1/F2
###Conduction Electron Scattering and Spin-Flipping at Sputtered Co/Ni Interfaces|H. Y. T. Nguyen,R. Acharyya,E. Huey,B. Richard,R. Loloee,W. P. Pratt Jr.,J. Bass,Shuai Wang,Ke Xia###
(980196, 980200)
 Current-perpendicular-to-plane magnetoresistance (CPP-MR) measurements let usquantify conduction electron scattering and spin-flipping at a sputteredferromagnetic/ferromagnetic (F1/F2  Co/Ni) interface, with importantconsequences for CPP-MR and spin-torque experiments with perpendicularanisotropy.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[191.0, 0.07, 'f', 1],[196.0, 2, ',', 1],[259.0, 2, 'and', 2],[260.0, 4, 'monolayers', 2]

Ni
###Conduction Electron Scattering and Spin-Flipping at Sputtered Co/Ni Interfaces|H. Y. T. Nguyen,R. Acharyya,E. Huey,B. Richard,R. Loloee,W. P. Pratt Jr.,J. Bass,Shuai Wang,Ke Xia###
(980205, 980205)
 Current-perpendicular-to-plane magnetoresistance (CPP-MR) measurements let usquantify conduction electron scattering and spin-flipping at a sputteredferromagnetic/ferromagnetic (F1/F2  Co/Ni) interface, with importantconsequences for CPP-MR and spin-torque experiments with perpendicularanisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, 0.07, 'f', 1],[191.0, 2, ',', 1],[254.0, 2, 'and', 2],[255.0, 4, 'monolayers', 2]

CPP
###Conduction Electron Scattering and Spin-Flipping at Sputtered Co/Ni Interfaces|H. Y. T. Nguyen,R. Acharyya,E. Huey,B. Richard,R. Loloee,W. P. Pratt Jr.,J. Bass,Shuai Wang,Ke Xia###
(980220, 980222)
 Current-perpendicular-to-plane magnetoresistance (CPP-MR) measurements let usquantify conduction electron scattering and spin-flipping at a sputteredferromagnetic/ferromagnetic (F1/F2  Co/Ni) interface, with importantconsequences for CPP-MR and spin-torque experiments with perpendicularanisotropy.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 0.07, 'f', 1],[174.0, 2, ',', 1],[237.0, 2, 'and', 2],[238.0, 4, 'monolayers', 2]

Co
###Conduction Electron Scattering and Spin-Flipping at Sputtered Co/Ni Interfaces|H. Y. T. Nguyen,R. Acharyya,E. Huey,B. Richard,R. Loloee,W. P. Pratt Jr.,J. Bass,Shuai Wang,Ke Xia###
(980255, 980255)
 We use ferromagnetically coupled ([Ni/Co]xn)Ni multilayers, andPy-based, symmetric double exchange-biased spin-valves (DEBSVs) containinginserts of ferromagnetically coupled ([Co/Ni]xn)Co or ([Ni/Co]xn)Nimultilayers, to derive Co/Ni interface specific resistances AR<missing VAR>(Co/Ni)(Up) 0.03 (0.02)(-0.03) f<missing VAR>-ohm-m<missing VAR>2 and AR<missing VAR>(Co/Ni)(down)  1.00 /- 0.07 f-ohm-m<missing VAR>2,and interface spin-flipping parameter delta(Co/Ni)  0.35 /- 0.05.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 0.07, 'f', 0],[141.0, 2, ',', 0],[204.0, 2, 'and', 1],[205.0, 4, 'monolayers', 1]

Ni
###Conduction Electron Scattering and Spin-Flipping at Sputtered Co/Ni Interfaces|H. Y. T. Nguyen,R. Acharyya,E. Huey,B. Richard,R. Loloee,W. P. Pratt Jr.,J. Bass,Shuai Wang,Ke Xia###
(980259, 980259)
 We use ferromagnetically coupled ([Ni/Co]xn)Ni multilayers, andPy-based, symmetric double exchange-biased spin-valves (DEBSVs) containinginserts of ferromagnetically coupled ([Co/Ni]xn)Co or ([Ni/Co]xn)Nimultilayers, to derive Co/Ni interface specific resistances AR<missing VAR>(Co/Ni)(Up) 0.03 (0.02)(-0.03) f<missing VAR>-ohm-m<missing VAR>2 and AR<missing VAR>(Co/Ni)(down)  1.00 /- 0.07 f-ohm-m<missing VAR>2,and interface spin-flipping parameter delta(Co/Ni)  0.35 /- 0.05.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 0.07, 'f', 0],[137.0, 2, ',', 0],[200.0, 2, 'and', 1],[201.0, 4, 'monolayers', 1]

BS
###Conduction Electron Scattering and Spin-Flipping at Sputtered Co/Ni Interfaces|H. Y. T. Nguyen,R. Acharyya,E. Huey,B. Richard,R. Loloee,W. P. Pratt Jr.,J. Bass,Shuai Wang,Ke Xia###
(980287, 980288)
 We use ferromagnetically coupled ([Ni/Co]xn)Ni multilayers, andPy-based, symmetric double exchange-biased spin-valves (DEBSVs) containinginserts of ferromagnetically coupled ([Co/Ni]xn)Co or ([Ni/Co]xn)Nimultilayers, to derive Co/Ni interface specific resistances AR<missing VAR>(Co/Ni)(Up) 0.03 (0.02)(-0.03) f<missing VAR>-ohm-m<missing VAR>2 and AR<missing VAR>(Co/Ni)(down)  1.00 /- 0.07 f-ohm-m<missing VAR>2,and interface spin-flipping parameter delta(Co/Ni)  0.35 /- 0.05.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 0.07, 'f', 0],[108.0, 2, ',', 0],[171.0, 2, 'and', 1],[172.0, 4, 'monolayers', 1]

Ni
###Conduction Electron Scattering and Spin-Flipping at Sputtered Co/Ni Interfaces|H. Y. T. Nguyen,R. Acharyya,E. Huey,B. Richard,R. Loloee,W. P. Pratt Jr.,J. Bass,Shuai Wang,Ke Xia###
(980307, 980307)
 We use ferromagnetically coupled ([Ni/Co]xn)Ni multilayers, andPy-based, symmetric double exchange-biased spin-valves (DEBSVs) containinginserts of ferromagnetically coupled ([Co/Ni]xn)Co or ([Ni/Co]xn)Nimultilayers, to derive Co/Ni interface specific resistances AR<missing VAR>(Co/Ni)(Up) 0.03 (0.02)(-0.03) f<missing VAR>-ohm-m<missing VAR>2 and AR<missing VAR>(Co/Ni)(down)  1.00 /- 0.07 f-ohm-m<missing VAR>2,and interface spin-flipping parameter delta(Co/Ni)  0.35 /- 0.05.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 0.07, 'f', 0],[89.0, 2, ',', 0],[152.0, 2, 'and', 1],[153.0, 4, 'monolayers', 1]

Co
###Conduction Electron Scattering and Spin-Flipping at Sputtered Co/Ni Interfaces|H. Y. T. Nguyen,R. Acharyya,E. Huey,B. Richard,R. Loloee,W. P. Pratt Jr.,J. Bass,Shuai Wang,Ke Xia###
(980311, 980311)
 We use ferromagnetically coupled ([Ni/Co]xn)Ni multilayers, andPy-based, symmetric double exchange-biased spin-valves (DEBSVs) containinginserts of ferromagnetically coupled ([Co/Ni]xn)Co or ([Ni/Co]xn)Nimultilayers, to derive Co/Ni interface specific resistances AR<missing VAR>(Co/Ni)(Up) 0.03 (0.02)(-0.03) f<missing VAR>-ohm-m<missing VAR>2 and AR<missing VAR>(Co/Ni)(down)  1.00 /- 0.07 f-ohm-m<missing VAR>2,and interface spin-flipping parameter delta(Co/Ni)  0.35 /- 0.05.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 0.07, 'f', 0],[85.0, 2, ',', 0],[148.0, 2, 'and', 1],[149.0, 4, 'monolayers', 1]

Co
###Conduction Electron Scattering and Spin-Flipping at Sputtered Co/Ni Interfaces|H. Y. T. Nguyen,R. Acharyya,E. Huey,B. Richard,R. Loloee,W. P. Pratt Jr.,J. Bass,Shuai Wang,Ke Xia###
(980319, 980319)
 We use ferromagnetically coupled ([Ni/Co]xn)Ni multilayers, andPy-based, symmetric double exchange-biased spin-valves (DEBSVs) containinginserts of ferromagnetically coupled ([Co/Ni]xn)Co or ([Ni/Co]xn)Nimultilayers, to derive Co/Ni interface specific resistances AR<missing VAR>(Co/Ni)(Up) 0.03 (0.02)(-0.03) f<missing VAR>-ohm-m<missing VAR>2 and AR<missing VAR>(Co/Ni)(down)  1.00 /- 0.07 f-ohm-m<missing VAR>2,and interface spin-flipping parameter delta(Co/Ni)  0.35 /- 0.05.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 0.07, 'f', 0],[77.0, 2, ',', 0],[140.0, 2, 'and', 1],[141.0, 4, 'monolayers', 1]

Ni
###Conduction Electron Scattering and Spin-Flipping at Sputtered Co/Ni Interfaces|H. Y. T. Nguyen,R. Acharyya,E. Huey,B. Richard,R. Loloee,W. P. Pratt Jr.,J. Bass,Shuai Wang,Ke Xia###
(980323, 980323)
 We use ferromagnetically coupled ([Ni/Co]xn)Ni multilayers, andPy-based, symmetric double exchange-biased spin-valves (DEBSVs) containinginserts of ferromagnetically coupled ([Co/Ni]xn)Co or ([Ni/Co]xn)Nimultilayers, to derive Co/Ni interface specific resistances AR<missing VAR>(Co/Ni)(Up) 0.03 (0.02)(-0.03) f<missing VAR>-ohm-m<missing VAR>2 and AR<missing VAR>(Co/Ni)(down)  1.00 /- 0.07 f-ohm-m<missing VAR>2,and interface spin-flipping parameter delta(Co/Ni)  0.35 /- 0.05.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 0.07, 'f', 0],[73.0, 2, ',', 0],[136.0, 2, 'and', 1],[137.0, 4, 'monolayers', 1]

Co/Ni
###Conduction Electron Scattering and Spin-Flipping at Sputtered Co/Ni Interfaces|H. Y. T. Nguyen,R. Acharyya,E. Huey,B. Richard,R. Loloee,W. P. Pratt Jr.,J. Bass,Shuai Wang,Ke Xia###
(980333, 980335)
 We use ferromagnetically coupled ([Ni/Co]xn)Ni multilayers, andPy-based, symmetric double exchange-biased spin-valves (DEBSVs) containinginserts of ferromagnetically coupled ([Co/Ni]xn)Co or ([Ni/Co]xn)Nimultilayers, to derive Co/Ni interface specific resistances AR<missing VAR>(Co/Ni)(Up) 0.03 (0.02)(-0.03) f<missing VAR>-ohm-m<missing VAR>2 and AR<missing VAR>(Co/Ni)(down)  1.00 /- 0.07 f-ohm-m<missing VAR>2,and interface spin-flipping parameter delta(Co/Ni)  0.35 /- 0.05.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[56.0, 0.07, 'f', 0],[61.0, 2, ',', 0],[124.0, 2, 'and', 1],[125.0, 4, 'monolayers', 1]

Ni
###Conduction Electron Scattering and Spin-Flipping at Sputtered Co/Ni Interfaces|H. Y. T. Nguyen,R. Acharyya,E. Huey,B. Richard,R. Loloee,W. P. Pratt Jr.,J. Bass,Shuai Wang,Ke Xia###
(980348, 980348)
 We use ferromagnetically coupled ([Ni/Co]xn)Ni multilayers, andPy-based, symmetric double exchange-biased spin-valves (DEBSVs) containinginserts of ferromagnetically coupled ([Co/Ni]xn)Co or ([Ni/Co]xn)Nimultilayers, to derive Co/Ni interface specific resistances AR<missing VAR>(Co/Ni)(Up) 0.03 (0.02)(-0.03) f<missing VAR>-ohm-m<missing VAR>2 and AR<missing VAR>(Co/Ni)(down)  1.00 /- 0.07 f-ohm-m<missing VAR>2,and interface spin-flipping parameter delta(Co/Ni)  0.35 /- 0.05.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 0.07, 'f', 0],[48.0, 2, ',', 0],[111.0, 2, 'and', 1],[112.0, 4, 'monolayers', 1]

Ni
###Conduction Electron Scattering and Spin-Flipping at Sputtered Co/Ni Interfaces|H. Y. T. Nguyen,R. Acharyya,E. Huey,B. Richard,R. Loloee,W. P. Pratt Jr.,J. Bass,Shuai Wang,Ke Xia###
(980380, 980380)
 We use ferromagnetically coupled ([Ni/Co]xn)Ni multilayers, andPy-based, symmetric double exchange-biased spin-valves (DEBSVs) containinginserts of ferromagnetically coupled ([Co/Ni]xn)Co or ([Ni/Co]xn)Nimultilayers, to derive Co/Ni interface specific resistances AR<missing VAR>(Co/Ni)(Up) 0.03 (0.02)(-0.03) f<missing VAR>-ohm-m<missing VAR>2 and AR<missing VAR>(Co/Ni)(down)  1.00 /- 0.07 f-ohm-m<missing VAR>2,and interface spin-flipping parameter delta(Co/Ni)  0.35 /- 0.05.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 0.07, 'f', 0],[16.0, 2, ',', 0],[79.0, 2, 'and', 1],[80.0, 4, 'monolayers', 1]

Ni
###Conduction Electron Scattering and Spin-Flipping at Sputtered Co/Ni Interfaces|H. Y. T. Nguyen,R. Acharyya,E. Huey,B. Richard,R. Loloee,W. P. Pratt Jr.,J. Bass,Shuai Wang,Ke Xia###
(980414, 980414)
 We use ferromagnetically coupled ([Ni/Co]xn)Ni multilayers, andPy-based, symmetric double exchange-biased spin-valves (DEBSVs) containinginserts of ferromagnetically coupled ([Co/Ni]xn)Co or ([Ni/Co]xn)Nimultilayers, to derive Co/Ni interface specific resistances AR<missing VAR>(Co/Ni)(Up) 0.03 (0.02)(-0.03) f<missing VAR>-ohm-m<missing VAR>2 and AR<missing VAR>(Co/Ni)(down)  1.00 /- 0.07 f-ohm-m<missing VAR>2,and interface spin-flipping parameter delta(Co/Ni)  0.35 /- 0.05.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 0.07, 'f', 0],[18.0, 2, ',', 0],[45.0, 2, 'and', 1],[46.0, 4, 'monolayers', 1]

La0.5Sr1.5MnO4
###Probing photo-induced melting of antiferromagnetic order in La0.5Sr1.5MnO4 by ultrafast resonant soft X-ray diffraction|H. Ehrke,R. I. Tobey,S. Wall,S. A. Cavill,M. Först,V. Khanna,Th. Garl,N. Stojanovic,D. Prabhakaran,A. T. Boothroyd,M. Gensch,A. Mirone,P. Reutler,A. Revcolevschi,S. S. Dhesi,A. Cavalleri###
(980503, 980509)
Probing photo-induced melting of antiferromagnetic order in La0.5Sr1.5MnO4 by ultrafast resonant soft X<missing VAR>-ray diffraction.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0.21428571428571427,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07142857142857142,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, 4, ',', 4],[190.0, 4, ',', 4],[216.0, 4, ',', 5],[220.0, 4, ',', 5]

La0.5Sr1.5MnO4
###Probing photo-induced melting of antiferromagnetic order in La0.5Sr1.5MnO4 by ultrafast resonant soft X-ray diffraction|H. Ehrke,R. I. Tobey,S. Wall,S. A. Cavill,M. Först,V. Khanna,Th. Garl,N. Stojanovic,D. Prabhakaran,A. T. Boothroyd,M. Gensch,A. Mirone,P. Reutler,A. Revcolevschi,S. S. Dhesi,A. Cavalleri###
(980653, 980659)
 Here, we show how ultrafast resonantsoft x<missing VAR>-ray diffraction can separately probe the photo-induced dynamics of spinand orbital orders in La0.5Sr1.5MnO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0.21428571428571427,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07142857142857142,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 4, ',', 1],[40.0, 4, ',', 1],[66.0, 4, ',', 2],[70.0, 4, ',', 2]

C
###Probing photo-induced melting of antiferromagnetic order in La0.5Sr1.5MnO4 by ultrafast resonant soft X-ray diffraction|H. Ehrke,R. I. Tobey,S. Wall,S. A. Cavill,M. Först,V. Khanna,Th. Garl,N. Stojanovic,D. Prabhakaran,A. T. Boothroyd,M. Gensch,A. Mirone,P. Reutler,A. Revcolevschi,S. S. Dhesi,A. Cavalleri###
(980668, 980668)
 Ultrafast melting of CE<missing VAR> antiferromagneticspin order is evidenced by the disappearance of a (1/4,1/4,1/2) diffractionpeak.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 4, ',', 0],[31.0, 4, ',', 0],[57.0, 4, ',', 1],[61.0, 4, ',', 1]

Fe2Se2
###Superconductivity and Magnetic Properties of high-quality single crystals of $A_{x}$Fe$_2$Se$_2$ ($A$ = K and Cs)|J. J. Ying,X. F. Wang,X. G. Luo,A. F. Wang,M. Zhang,Y. J. Yan,Z. J. Xiang,R. H. Liu,P. Cheng,G. J. Ye,X. H. Chen###
(980855, 980858)
Superconductivity and Magnetic Properties of high-quality single crystals of Ax<missing VAR>Fe2Se2 (A  K and Cs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 31, 'K', 3],[110.0, 30, 'K', 3],[132.0, 100, '%', 3],[176.0, 1300, 'm', 4],[290.0, 3, 'for', 6]

K
###Superconductivity and Magnetic Properties of high-quality single crystals of $A_{x}$Fe$_2$Se$_2$ ($A$ = K and Cs)|J. J. Ying,X. F. Wang,X. G. Luo,A. F. Wang,M. Zhang,Y. J. Yan,Z. J. Xiang,R. H. Liu,P. Cheng,G. J. Ye,X. H. Chen###
(980864, 980864)
Superconductivity and Magnetic Properties of high-quality single crystals of Ax<missing VAR>Fe2Se2 (A  K and Cs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 31, 'K', 3],[104.0, 30, 'K', 3],[126.0, 100, '%', 3],[170.0, 1300, 'm', 4],[284.0, 3, 'for', 6]

Cs
###Superconductivity and Magnetic Properties of high-quality single crystals of $A_{x}$Fe$_2$Se$_2$ ($A$ = K and Cs)|J. J. Ying,X. F. Wang,X. G. Luo,A. F. Wang,M. Zhang,Y. J. Yan,Z. J. Xiang,R. H. Liu,P. Cheng,G. J. Ye,X. H. Chen###
(980868, 980868)
Superconductivity and Magnetic Properties of high-quality single crystals of Ax<missing VAR>Fe2Se2 (A  K and Cs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 31, 'K', 3],[100.0, 30, 'K', 3],[122.0, 100, '%', 3],[166.0, 1300, 'm', 4],[280.0, 3, 'for', 6]

Fe2Se2
###Superconductivity and Magnetic Properties of high-quality single crystals of $A_{x}$Fe$_2$Se$_2$ ($A$ = K and Cs)|J. J. Ying,X. F. Wang,X. G. Luo,A. F. Wang,M. Zhang,Y. J. Yan,Z. J. Xiang,R. H. Liu,P. Cheng,G. J. Ye,X. H. Chen###
(980892, 980895)
 We successfully grew the high-quality single crystals of Ax<missing VAR>Fe2Se2(A  K and Cs) by self-flux method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 31, 'K', 2],[73.0, 30, 'K', 2],[95.0, 100, '%', 2],[139.0, 1300, 'm', 3],[253.0, 3, 'for', 5]

K
###Superconductivity and Magnetic Properties of high-quality single crystals of $A_{x}$Fe$_2$Se$_2$ ($A$ = K and Cs)|J. J. Ying,X. F. Wang,X. G. Luo,A. F. Wang,M. Zhang,Y. J. Yan,Z. J. Xiang,R. H. Liu,P. Cheng,G. J. Ye,X. H. Chen###
(980902, 980902)
 We successfully grew the high-quality single crystals of Ax<missing VAR>Fe2Se2(A  K and Cs) by self-flux method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 31, 'K', 2],[66.0, 30, 'K', 2],[88.0, 100, '%', 2],[132.0, 1300, 'm', 3],[246.0, 3, 'for', 5]

Cs
###Superconductivity and Magnetic Properties of high-quality single crystals of $A_{x}$Fe$_2$Se$_2$ ($A$ = K and Cs)|J. J. Ying,X. F. Wang,X. G. Luo,A. F. Wang,M. Zhang,Y. J. Yan,Z. J. Xiang,R. H. Liu,P. Cheng,G. J. Ye,X. H. Chen###
(980906, 980906)
 We successfully grew the high-quality single crystals of Ax<missing VAR>Fe2Se2(A  K and Cs) by self-flux method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 31, 'K', 2],[62.0, 30, 'K', 2],[84.0, 100, '%', 2],[128.0, 1300, 'm', 3],[242.0, 3, 'for', 5]

K
###Superconductivity and Magnetic Properties of high-quality single crystals of $A_{x}$Fe$_2$Se$_2$ ($A$ = K and Cs)|J. J. Ying,X. F. Wang,X. G. Luo,A. F. Wang,M. Zhang,Y. J. Yan,Z. J. Xiang,R. H. Liu,P. Cheng,G. J. Ye,X. H. Chen###
(980972, 980972)
 The crystals show the onsetsuperconducting transition temperatures (T<missing VAR>rm c) of 31 K and 30 K for K-and Cs-compounds, respectively, with nearly 100% shielding fraction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 31, 'K', 0],[4.0, 30, 'K', 0],[18.0, 100, '%', 0],[62.0, 1300, 'm', 1],[176.0, 3, 'for', 3]

Cs
###Superconductivity and Magnetic Properties of high-quality single crystals of $A_{x}$Fe$_2$Se$_2$ ($A$ = K and Cs)|J. J. Ying,X. F. Wang,X. G. Luo,A. F. Wang,M. Zhang,Y. J. Yan,Z. J. Xiang,R. H. Liu,P. Cheng,G. J. Ye,X. H. Chen###
(980978, 980978)
 The crystals show the onsetsuperconducting transition temperatures (T<missing VAR>rm c) of 31 K and 30 K for K-and Cs-compounds, respectively, with nearly 100% shielding fraction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 31, 'K', 0],[10.0, 30, 'K', 0],[12.0, 100, '%', 0],[56.0, 1300, 'm', 1],[170.0, 3, 'for', 3]

K0.86Fe2Se1.82
###Superconductivity and Magnetic Properties of high-quality single crystals of $A_{x}$Fe$_2$Se$_2$ ($A$ = K and Cs)|J. J. Ying,X. F. Wang,X. G. Luo,A. F. Wang,M. Zhang,Y. J. Yan,Z. J. Xiang,R. H. Liu,P. Cheng,G. J. Ye,X. H. Chen###
(981046, 981051)
 Thecrystals show quite high resistivity in the normal state of more than 160m<missing VAR>Omega cm and 1300 mOmega cm maximum resistivity forK0.86Fe2Se1.82 and Cs0.86Fe1.66Se2 single crystals,respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18376068376068377,0,0,0,0,0,0,0.4273504273504274,0,0,0,0,0,0,0,0.38888888888888895,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 31, 'K', 1],[78.0, 30, 'K', 1],[56.0, 100, '%', 1],[12.0, 1300, 'm', 0],[97.0, 3, 'for', 2]

Cs0.86Fe1.66Se2
###Superconductivity and Magnetic Properties of high-quality single crystals of $A_{x}$Fe$_2$Se$_2$ ($A$ = K and Cs)|J. J. Ying,X. F. Wang,X. G. Luo,A. F. Wang,M. Zhang,Y. J. Yan,Z. J. Xiang,R. H. Liu,P. Cheng,G. J. Ye,X. H. Chen###
(981055, 981060)
 Thecrystals show quite high resistivity in the normal state of more than 160m<missing VAR>Omega cm and 1300 mOmega cm maximum resistivity forK0.86Fe2Se1.82 and Cs0.86Fe1.66Se2 single crystals,respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3672566371681416,0,0,0,0,0,0,0,0.4424778761061947,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.19026548672566373,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 31, 'K', 1],[87.0, 30, 'K', 1],[65.0, 100, '%', 1],[21.0, 1300, 'm', 0],[88.0, 3, 'for', 2]

H
###Superconductivity and Magnetic Properties of high-quality single crystals of $A_{x}$Fe$_2$Se$_2$ ($A$ = K and Cs)|J. J. Ying,X. F. Wang,X. G. Luo,A. F. Wang,M. Zhang,Y. J. Yan,Z. J. Xiang,R. H. Liu,P. Cheng,G. J. Ye,X. H. Chen###
(981081, 981081)
 Much larger upper critical field Hrm c<missing VAR>2 is inferred fromlow-temperature iso-magnetic-field magnetoresistance in these crystals than inFeSe.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 31, 'K', 2],[113.0, 30, 'K', 2],[91.0, 100, '%', 2],[47.0, 1300, 'm', 1],[67.0, 3, 'for', 1]

FeSe
###Superconductivity and Magnetic Properties of high-quality single crystals of $A_{x}$Fe$_2$Se$_2$ ($A$ = K and Cs)|J. J. Ying,X. F. Wang,X. G. Luo,A. F. Wang,M. Zhang,Y. J. Yan,Z. J. Xiang,R. H. Liu,P. Cheng,G. J. Ye,X. H. Chen###
(981117, 981118)
 Much larger upper critical field Hrm c<missing VAR>2 is inferred fromlow-temperature iso-magnetic-field magnetoresistance in these crystals than inFeSe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 31, 'K', 2],[149.0, 30, 'K', 2],[127.0, 100, '%', 2],[83.0, 1300, 'm', 1],[30.0, 3, 'for', 1]

H
###Superconductivity and Magnetic Properties of high-quality single crystals of $A_{x}$Fe$_2$Se$_2$ ($A$ = K and Cs)|J. J. Ying,X. F. Wang,X. G. Luo,A. F. Wang,M. Zhang,Y. J. Yan,Z. J. Xiang,R. H. Liu,P. Cheng,G. J. Ye,X. H. Chen###
(981125, 981125)
 The anisotropy Habrm c<missing VAR>2(0)/Hc<missing VAR>rm c<missing VAR>2(0) is around 3 forboth of the two materials.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 31, 'K', 3],[157.0, 30, 'K', 3],[135.0, 100, '%', 3],[91.0, 1300, 'm', 2],[23.0, 3, 'for', 0]

H
###Superconductivity and Magnetic Properties of high-quality single crystals of $A_{x}$Fe$_2$Se$_2$ ($A$ = K and Cs)|J. J. Ying,X. F. Wang,X. G. Luo,A. F. Wang,M. Zhang,Y. J. Yan,Z. J. Xiang,R. H. Liu,P. Cheng,G. J. Ye,X. H. Chen###
(981135, 981135)
 The anisotropy Habrm c<missing VAR>2(0)/Hc<missing VAR>rm c<missing VAR>2(0) is around 3 forboth of the two materials.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[170.0, 31, 'K', 3],[167.0, 30, 'K', 3],[145.0, 100, '%', 3],[101.0, 1300, 'm', 2],[13.0, 3, 'for', 0]

Cs0.86Fe1.66Se2
###Superconductivity and Magnetic Properties of high-quality single crystals of $A_{x}$Fe$_2$Se$_2$ ($A$ = K and Cs)|J. J. Ying,X. F. Wang,X. G. Luo,A. F. Wang,M. Zhang,Y. J. Yan,Z. J. Xiang,R. H. Liu,P. Cheng,G. J. Ye,X. H. Chen###
(981185, 981190)
 Anisotropic peculiar magnetic behavior in normalstate has been found for Cs0.86Fe1.66Se2<missing PERIOD>
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3672566371681416,0,0,0,0,0,0,0,0.4424778761061947,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.19026548672566373,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[220.0, 31, 'K', 4],[217.0, 30, 'K', 4],[195.0, 100, '%', 4],[151.0, 1300, 'm', 3],[37.0, 3, 'for', 1]

Tb
###Enhanced electrical resistance at the field-induced magnetic transitions in some stoichiometric and nonstoichiometric Tb-based ternary germanides|K. Mukherjee,Kartik K Iyer,E. V. Sampathkumaran###
(981228, 981228)
Enhanced electrical resistance at the field-induced magnetic transitions in some stoichiometric and nonstoichiometric Tb-based ternary germanides.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 10, 'K', 3],[140.0, 17, 'and', 4],[141.0, 19, 'K', 4]

Tb
###Enhanced electrical resistance at the field-induced magnetic transitions in some stoichiometric and nonstoichiometric Tb-based ternary germanides|K. Mukherjee,Kartik K Iyer,E. V. Sampathkumaran###
(981255, 981255)
 We present the magnetic and transport behavior of some Tb compounds, viz.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 10, 'K', 2],[113.0, 17, 'and', 3],[114.0, 19, 'K', 3]

TbIrGe2
###Enhanced electrical resistance at the field-induced magnetic transitions in some stoichiometric and nonstoichiometric Tb-based ternary germanides|K. Mukherjee,Kartik K Iyer,E. V. Sampathkumaran###
(981265, 981268)
,TbIrGe2, TbFe(0.4)Ge2, and TbCo(0.4)Ge2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 10, 'K', 1],[100.0, 17, 'and', 2],[101.0, 19, 'K', 2]

Ge2
###Enhanced electrical resistance at the field-induced magnetic transitions in some stoichiometric and nonstoichiometric Tb-based ternary germanides|K. Mukherjee,Kartik K Iyer,E. V. Sampathkumaran###
(981276, 981277)
,TbIrGe2, TbFe(0.4)Ge2, and TbCo(0.4)Ge2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 10, 'K', 1],[91.0, 17, 'and', 2],[92.0, 19, 'K', 2]

Ge2
###Enhanced electrical resistance at the field-induced magnetic transitions in some stoichiometric and nonstoichiometric Tb-based ternary germanides|K. Mukherjee,Kartik K Iyer,E. V. Sampathkumaran###
(981287, 981288)
,TbIrGe2, TbFe(0.4)Ge2, and TbCo(0.4)Ge2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 10, 'K', 1],[80.0, 17, 'and', 2],[81.0, 19, 'K', 2]

TbIrGe2
###Enhanced electrical resistance at the field-induced magnetic transitions in some stoichiometric and nonstoichiometric Tb-based ternary germanides|K. Mukherjee,Kartik K Iyer,E. V. Sampathkumaran###
(981297, 981300)
 The stoichoometric germanide TbIrGe2exhibits at least two distinct magnetic transitions in a close temperatureinterval around 10 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 10, 'K', 0],[68.0, 17, 'and', 1],[69.0, 19, 'K', 1]

Ge2
###Enhanced electrical resistance at the field-induced magnetic transitions in some stoichiometric and nonstoichiometric Tb-based ternary germanides|K. Mukherjee,Kartik K Iyer,E. V. Sampathkumaran###
(981346, 981347)
 The non-stoichiometric compounds, TbFe(0.4)Ge2 andTbCo(0.4)Ge2, undergo magnetic ordering around 17 and 19 K respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 10, 'K', 1],[21.0, 17, 'and', 0],[22.0, 19, 'K', 0]

Ge2
###Enhanced electrical resistance at the field-induced magnetic transitions in some stoichiometric and nonstoichiometric Tb-based ternary germanides|K. Mukherjee,Kartik K Iyer,E. V. Sampathkumaran###
(981357, 981358)
 The non-stoichiometric compounds, TbFe(0.4)Ge2 andTbCo(0.4)Ge2, undergo magnetic ordering around 17 and 19 K respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 10, 'K', 1],[10.0, 17, 'and', 0],[11.0, 19, 'K', 0]

Tb
###Enhanced electrical resistance at the field-induced magnetic transitions in some stoichiometric and nonstoichiometric Tb-based ternary germanides|K. Mukherjee,Kartik K Iyer,E. V. Sampathkumaran###
(981466, 981466)
 That is, these Tb compounds exhibit a positive MR andentropy change beyond a magnetic field where M<missing VAR> also shows a field-inducedtransition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 10, 'K', 4],[98.0, 17, 'and', 3],[97.0, 19, 'K', 3]

Bi
###Magnetic Field Tuned Quantum Phase Transition in the Insulating Regime of Ultrathin Amorphous Bi Films|Yen-Hsiang Lin,A. M. Goldman###
(981612, 981612)
Magnetic Field Tuned Quantum Phase Transition in the Insulating Regime of Ultrathin Amorphous Bi Films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[238.0, 2, ',', 6]

(B)
###Magnetic Field Tuned Quantum Phase Transition in the Insulating Regime of Ultrathin Amorphous Bi Films|Yen-Hsiang Lin,A. M. Goldman###
(981658, 981660)
 field, R<missing VAR>(B) has been found ininsulating films of a sequence of homogeneous, quench-condensed films ofamorphous Bi undergoing a thickness-tuned superconductor-insulator transition.
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[190.0, 2, ',', 4]

Bi
###Magnetic Field Tuned Quantum Phase Transition in the Insulating Regime of Ultrathin Amorphous Bi Films|Yen-Hsiang Lin,A. M. Goldman###
(981697, 981697)
 field, R<missing VAR>(B) has been found ininsulating films of a sequence of homogeneous, quench-condensed films ofamorphous Bi undergoing a thickness-tuned superconductor-insulator transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 2, ',', 4]

(B)
###Magnetic Field Tuned Quantum Phase Transition in the Insulating Regime of Ultrathin Amorphous Bi Films|Yen-Hsiang Lin,A. M. Goldman###
(981775, 981777)
 field were found tocross at a well-defined magnetic field higher than the field corresponding tothe peak in R<missing VAR>(B).
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 2, ',', 2]

B
###Magnetic Field Tuned Quantum Phase Transition in the Insulating Regime of Ultrathin Amorphous Bi Films|Yen-Hsiang Lin,A. M. Goldman###
(981788, 981788)
 For all values of B, R(T) was found to obey an Arrheniusform.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 2, ',', 1]

At
###Magnetic Field Tuned Quantum Phase Transition in the Insulating Regime of Ultrathin Amorphous Bi Films|Yen-Hsiang Lin,A. M. Goldman###
(981812, 981812)
 At the crossover magnetic field the prefactor became equal to the quantumresistance of electron pairs, h<missing VAR>/4e<missing VAR>2, and the activation energy returned to itszero field value.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 2, ',', 0]

Ti1-x
###Large Magnetoresistance and Spin-Polarized Heavy-Mass Electron State in a Doped Valence Bond Solid (Ti1-xVx)2O3|M. Uchida,Y. Onose,Y. Tokura###
(981966, 981969)
Large Magnetoresistance and Spin-Polarized Heavy-Mass Electron State in a Doped Valence Bond Solid (Ti1-xVx)2O3.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[149.0, 1, 'or', 3],[150.0, 2, 'orders', 3]

O3
###Large Magnetoresistance and Spin-Polarized Heavy-Mass Electron State in a Doped Valence Bond Solid (Ti1-xVx)2O3|M. Uchida,Y. Onose,Y. Tokura###
(981973, 981974)
Large Magnetoresistance and Spin-Polarized Heavy-Mass Electron State in a Doped Valence Bond Solid (Ti1-xVx)2O3.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 1, 'or', 3],[145.0, 2, 'orders', 3]

Ti1-x
###Large Magnetoresistance and Spin-Polarized Heavy-Mass Electron State in a Doped Valence Bond Solid (Ti1-xVx)2O3|M. Uchida,Y. Onose,Y. Tokura###
(982005, 982008)
 A heavy-mass electron state is realized in a doped valence bond solid(Ti1-xVx)2O3.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[110.0, 1, 'or', 2],[111.0, 2, 'orders', 2]

O3
###Large Magnetoresistance and Spin-Polarized Heavy-Mass Electron State in a Doped Valence Bond Solid (Ti1-xVx)2O3|M. Uchida,Y. Onose,Y. Tokura###
(982012, 982013)
 A heavy-mass electron state is realized in a doped valence bond solid(Ti1-xVx)2O3.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 1, 'or', 2],[106.0, 2, 'orders', 2]

In
###Large Magnetoresistance and Spin-Polarized Heavy-Mass Electron State in a Doped Valence Bond Solid (Ti1-xVx)2O3|M. Uchida,Y. Onose,Y. Tokura###
(982016, 982016)
 In this system, itinerant holes mediate the mainly ferromagneticR<missing VAR>KKY interaction between the localized magnetic moments and become readilyspin-polarized under a magnetic field, while showing large negativemagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 1, 'or', 1],[103.0, 2, 'orders', 1]

KKY
###Large Magnetoresistance and Spin-Polarized Heavy-Mass Electron State in a Doped Valence Bond Solid (Ti1-xVx)2O3|M. Uchida,Y. Onose,Y. Tokura###
(982037, 982039)
 In this system, itinerant holes mediate the mainly ferromagneticR<missing VAR>KKY interaction between the localized magnetic moments and become readilyspin-polarized under a magnetic field, while showing large negativemagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 1, 'or', 1],[80.0, 2, 'orders', 1]

In
###Large Magnetoresistance and Spin-Polarized Heavy-Mass Electron State in a Doped Valence Bond Solid (Ti1-xVx)2O3|M. Uchida,Y. Onose,Y. Tokura###
(982085, 982085)
 In spite of the ferromagnetic interaction among thecarriers, their effective mass is found to be 1 or 2 orders of magnitude largerthan that of usual doped semiconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 1, 'or', 0],[34.0, 2, 'orders', 0]

Ti
###Large Magnetoresistance and Spin-Polarized Heavy-Mass Electron State in a Doped Valence Bond Solid (Ti1-xVx)2O3|M. Uchida,Y. Onose,Y. Tokura###
(982166, 982166)
 Such strong mass renormalization isascribable to the polaron formation on the Ti-dimer, where the spin-singletstate is originally formed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 1, 'or', 1],[47.0, 2, 'orders', 1]

La0.7Sr0.3MnO3
###The role of magnetic anisotropy in spin filter junctions|R. V. Chopdekar,B. B. Nelson-Cheeseman,M. Liberati,E. Arenholz,Y. Suzuki###
(982465, 982471)
 We have demonstrated spin filtering behavior inLa0.7Sr0.3MnO3/chromite/Fe3O4 junctions without nonmagnetic spacer layers wherethe interface anisotropy plays a significant role in determining transportbehavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe3O4
###The role of magnetic anisotropy in spin filter junctions|R. V. Chopdekar,B. B. Nelson-Cheeseman,M. Liberati,E. Arenholz,Y. Suzuki###
(982475, 982478)
 We have demonstrated spin filtering behavior inLa0.7Sr0.3MnO3/chromite/Fe3O4 junctions without nonmagnetic spacer layers wherethe interface anisotropy plays a significant role in determining transportbehavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnCr2O4
###The role of magnetic anisotropy in spin filter junctions|R. V. Chopdekar,B. B. Nelson-Cheeseman,M. Liberati,E. Arenholz,Y. Suzuki###
(982590, 982594)
 Detailed studies of chemical and magnetic structure at the interfacesindicate that abrupt changes in magnetic anisotropy across thenon-isostructural interface is the cause of the significant suppression ofjunction magnetoresistance in junctions with MnCr2O4 barrier layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nd1.85Ce0.15CuO4
###Anisotropic magnetotransport of superconducting and normal state in an electron-doped Nd_{1.85}Ce_{0.15}CuO_{4-δ} single crystal|Yue Wang,Hong Gao###
(982631, 982637)
Anisotropic magnetotransport of superconducting and normal state in an electron-doped Nd1.85Ce0.15CuO4- single crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.02142857142857143,0,0.2642857142857143,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 12, 'T', 1],[179.0, 8.0, 'In', 3],[189.0, 50, '<', 3],[232.0, 10, 'times', 3]

Nd1.85Ce0.15CuO4
###Anisotropic magnetotransport of superconducting and normal state in an electron-doped Nd_{1.85}Ce_{0.15}CuO_{4-δ} single crystal|Yue Wang,Hong Gao###
(982660, 982666)
 The anisotropic properties of an optimally dopedNd1.85Ce0.15CuO4-delta single crystal have been studied both belowand above the critical temperature Tc via the resistivity measurement inmagnetic field H up to 12 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.02142857142857143,0,0.2642857142857143,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 12, 'T', 0],[150.0, 8.0, 'In', 2],[160.0, 50, '<', 2],[203.0, 10, 'times', 2]

Tc
###Anisotropic magnetotransport of superconducting and normal state in an electron-doped Nd_{1.85}Ce_{0.15}CuO_{4-δ} single crystal|Yue Wang,Hong Gao###
(982695, 982695)
 The anisotropic properties of an optimally dopedNd1.85Ce0.15CuO4-delta single crystal have been studied both belowand above the critical temperature Tc via the resistivity measurement inmagnetic field H up to 12 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 12, 'T', 0],[121.0, 8.0, 'In', 2],[131.0, 50, '<', 2],[174.0, 10, 'times', 2]

H
###Anisotropic magnetotransport of superconducting and normal state in an electron-doped Nd_{1.85}Ce_{0.15}CuO_{4-δ} single crystal|Yue Wang,Hong Gao###
(982712, 982712)
 The anisotropic properties of an optimally dopedNd1.85Ce0.15CuO4-delta single crystal have been studied both belowand above the critical temperature Tc via the resistivity measurement inmagnetic field H up to 12 T.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 12, 'T', 0],[104.0, 8.0, 'In', 2],[114.0, 50, '<', 2],[157.0, 10, 'times', 2]

H
###Anisotropic magnetotransport of superconducting and normal state in an electron-doped Nd_{1.85}Ce_{0.15}CuO_{4-δ} single crystal|Yue Wang,Hong Gao###
(982748, 982748)
 By scaling the conductivity fluctuation around thesuperconducting transition, the upper critical field Hc<missing VAR>2(T) has beendetermined for field parallel to the c<missing VAR>-axis or to the basal ab-plane.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 12, 'T', 1],[68.0, 8.0, 'In', 1],[78.0, 50, '<', 1],[121.0, 10, 'times', 1]

H
###Anisotropic magnetotransport of superconducting and normal state in an electron-doped Nd_{1.85}Ce_{0.15}CuO_{4-δ} single crystal|Yue Wang,Hong Gao###
(982797, 982797)
 Theanisotropy factor gammaHc<missing VAR>2ab/Hc2c is estimated to be about 8. Inthe normal state (50<T<missing VAR><180 K), the magnetoresistance (MR) basically followsan H2 dependence and for Hc<missing VAR> it is almost 10 times larger than that forHab.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 12, 'T', 2],[19.0, 8.0, 'In', 0],[29.0, 50, '<', 0],[72.0, 10, 'times', 0]

H
###Anisotropic magnetotransport of superconducting and normal state in an electron-doped Nd_{1.85}Ce_{0.15}CuO_{4-δ} single crystal|Yue Wang,Hong Gao###
(982802, 982802)
 Theanisotropy factor gammaHc<missing VAR>2ab/Hc2c is estimated to be about 8. Inthe normal state (50<T<missing VAR><180 K), the magnetoresistance (MR) basically followsan H2 dependence and for Hc<missing VAR> it is almost 10 times larger than that forHab.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 12, 'T', 2],[14.0, 8.0, 'In', 0],[24.0, 50, '<', 0],[67.0, 10, 'times', 0]

K
###Anisotropic magnetotransport of superconducting and normal state in an electron-doped Nd_{1.85}Ce_{0.15}CuO_{4-δ} single crystal|Yue Wang,Hong Gao###
(982832, 982832)
 Theanisotropy factor gammaHc<missing VAR>2ab/Hc2c is estimated to be about 8. Inthe normal state (50<T<missing VAR><180 K), the magnetoresistance (MR) basically followsan H2 dependence and for Hc<missing VAR> it is almost 10 times larger than that forHab.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 12, 'T', 2],[16.0, 8.0, 'In', 0],[6.0, 50, '<', 0],[37.0, 10, 'times', 0]

H2
###Anisotropic magnetotransport of superconducting and normal state in an electron-doped Nd_{1.85}Ce_{0.15}CuO_{4-δ} single crystal|Yue Wang,Hong Gao###
(982852, 982853)
 Theanisotropy factor gammaHc<missing VAR>2ab/Hc2c is estimated to be about 8. Inthe normal state (50<T<missing VAR><180 K), the magnetoresistance (MR) basically followsan H2 dependence and for Hc<missing VAR> it is almost 10 times larger than that forHab.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 12, 'T', 2],[36.0, 8.0, 'In', 0],[26.0, 50, '<', 0],[16.0, 10, 'times', 0]

H
###Anisotropic magnetotransport of superconducting and normal state in an electron-doped Nd_{1.85}Ce_{0.15}CuO_{4-δ} single crystal|Yue Wang,Hong Gao###
(982861, 982861)
 Theanisotropy factor gammaHc<missing VAR>2ab/Hc2c is estimated to be about 8. Inthe normal state (50<T<missing VAR><180 K), the magnetoresistance (MR) basically followsan H2 dependence and for Hc<missing VAR> it is almost 10 times larger than that forHab.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 12, 'T', 2],[45.0, 8.0, 'In', 0],[35.0, 50, '<', 0],[8.0, 10, 'times', 0]

H
###Anisotropic magnetotransport of superconducting and normal state in an electron-doped Nd_{1.85}Ce_{0.15}CuO_{4-δ} single crystal|Yue Wang,Hong Gao###
(982880, 982880)
 Theanisotropy factor gammaHc<missing VAR>2ab/Hc2c is estimated to be about 8. Inthe normal state (50<T<missing VAR><180 K), the magnetoresistance (MR) basically followsan H2 dependence and for Hc<missing VAR> it is almost 10 times larger than that forHab.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 12, 'T', 2],[64.0, 8.0, 'In', 0],[54.0, 50, '<', 0],[11.0, 10, 'times', 0]

Nd1.85Ce0.15CuO4
###Anisotropic magnetotransport of superconducting and normal state in an electron-doped Nd_{1.85}Ce_{0.15}CuO_{4-δ} single crystal|Yue Wang,Hong Gao###
(982907, 982913)
 Comparing with hole-doped cuprates it suggests that the optimally dopedNd1.85Ce0.15CuO4-delta cuprate superconductor has a moderateanisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.02142857142857143,0,0.2642857142857143,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[190.0, 12, 'T', 3],[91.0, 8.0, 'In', 1],[81.0, 50, '<', 1],[38.0, 10, 'times', 1]

Bi
###Surface state band mobility and thermopower in semiconducting bismuth nanowires|T. E. Huber,A. Adeyeye,A. Nikolaeva,L. Konopko,R. C. Johnson,M. J. Graf###
(982966, 982966)
 Many thermoelectrics like Bi exhibit Rashba spin-orbit surface bands forwhich topological insulator behavior consisting of ultrahigh mobilities andenhanced thermopower has been predicted.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 50, 'nm', 1],[228.0, 100, 'K', 4],[241.0, 1.2, 'T', 5]

Bi
###Surface state band mobility and thermopower in semiconducting bismuth nanowires|T. E. Huber,A. Adeyeye,A. Nikolaeva,L. Konopko,R. C. Johnson,M. J. Graf###
(983013, 983013)
 Bi nanowires realize surface-onlyelectronic transport since they become bulk insulators when they undergo thebulk semimetal-semiconductor transition as a result of quantum confinement fordiameters close to 50 nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 50, 'nm', 0],[181.0, 100, 'K', 3],[194.0, 1.2, 'T', 4]

Bi
###Surface state band mobility and thermopower in semiconducting bismuth nanowires|T. E. Huber,A. Adeyeye,A. Nikolaeva,L. Konopko,R. C. Johnson,M. J. Graf###
(983101, 983101)
 We studied 20-, 30-, 50- and 200-nm trigonal Biwires.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 50, 'nm', 1],[93.0, 100, 'K', 2],[106.0, 1.2, 'T', 3]

(K2)
###Surface state band mobility and thermopower in semiconducting bismuth nanowires|T. E. Huber,A. Adeyeye,A. Nikolaeva,L. Konopko,R. C. Johnson,M. J. Graf###
(983211, 983214)
The surface thermopower is - 1.2 T microvolt/(K2), a value that is consistentwith theory, raising the prospect of developing nanoscale thermoelectrics basedon surface bands.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 50, 'nm', 4],[17.0, 100, 'K', 1],[4.0, 1.2, 'T', 0]

SiO2
###Magnetodielectric study in SiO2-coated Fe3O4 nanoparticle compacts|C. -C. Chang,L. Zhao,M. -K. Wu###
(983271, 983273)
Magnetodielectric study in SiO2-coated Fe3O4 nanoparticle compacts.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe3O4
###Magnetodielectric study in SiO2-coated Fe3O4 nanoparticle compacts|C. -C. Chang,L. Zhao,M. -K. Wu###
(983277, 983280)
Magnetodielectric study in SiO2-coated Fe3O4 nanoparticle compacts.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe3O4
###Magnetodielectric study in SiO2-coated Fe3O4 nanoparticle compacts|C. -C. Chang,L. Zhao,M. -K. Wu###
(983295, 983298)
 The dielectric properties of Fe3O4 magnetic nanoparticles with aninsulating coating layer of SiO2 were investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SiO2
###Magnetodielectric study in SiO2-coated Fe3O4 nanoparticle compacts|C. -C. Chang,L. Zhao,M. -K. Wu###
(983317, 983319)
 The dielectric properties of Fe3O4 magnetic nanoparticles with aninsulating coating layer of SiO2 were investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Magnetodielectric study in SiO2-coated Fe3O4 nanoparticle compacts|C. -C. Chang,L. Zhao,M. -K. Wu###
(983326, 983326)
 At high temperatures,the changes of the dielectric constant and loss induced by the magnetic fieldare opposite in sign and strongly frequency-dependent, which originates fromextrinsic magnetodielectric coupling-the Maxwell-Wagner effect combined withmagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe3O4
###Magnetodielectric study in SiO2-coated Fe3O4 nanoparticle compacts|C. -C. Chang,L. Zhao,M. -K. Wu###
(983538, 983541)
 Ourobservations are consistent with the recent polarization switchingmeasurements, which confirm the low-temperature multiferroic state existing inhighly-lossy Fe3O4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Bilayer manganites: polarons in the midst of a metallic breakdown|F. Massee,S. de Jong. Y. Huang,W. K. Siu,I. Santoso,A. Mans,A. T. Boothroyd,D. Prabhakaran,R. Follath,A. Varykhalov,L. Patthey,M. Shi,J. B. Goedkoop,M. S. Golden###
(983658, 983658)
 The exact nature of the low temperature electronic phase of the manganitematerials family, and hence the origin of their colossal magnetoresistant (CMR)effect, is still under heavy debate.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La2
###Bilayer manganites: polarons in the midst of a metallic breakdown|F. Massee,S. de Jong. Y. Huang,W. K. Siu,I. Santoso,A. Mans,A. T. Boothroyd,D. Prabhakaran,R. Follath,A. Varykhalov,L. Patthey,M. Shi,J. B. Goedkoop,M. S. Golden###
(983702, 983703)
 By combining new photoemission andtunneling data, we show that in La2-2x<missing VAR>Sr12x<missing VAR>Mn2O7 the polaronic degrees offreedom win out across the CMR region of the phase diagram.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr12
###Bilayer manganites: polarons in the midst of a metallic breakdown|F. Massee,S. de Jong. Y. Huang,W. K. Siu,I. Santoso,A. Mans,A. T. Boothroyd,D. Prabhakaran,R. Follath,A. Varykhalov,L. Patthey,M. Shi,J. B. Goedkoop,M. S. Golden###
(983707, 983709)
 By combining new photoemission andtunneling data, we show that in La2-2x<missing VAR>Sr12x<missing VAR>Mn2O7 the polaronic degrees offreedom win out across the CMR region of the phase diagram.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn2O7
###Bilayer manganites: polarons in the midst of a metallic breakdown|F. Massee,S. de Jong. Y. Huang,W. K. Siu,I. Santoso,A. Mans,A. T. Boothroyd,D. Prabhakaran,R. Follath,A. Varykhalov,L. Patthey,M. Shi,J. B. Goedkoop,M. S. Golden###
(983711, 983714)
 By combining new photoemission andtunneling data, we show that in La2-2x<missing VAR>Sr12x<missing VAR>Mn2O7 the polaronic degrees offreedom win out across the CMR region of the phase diagram.
Featurization terminated normally.
0,0,0,0,0,0,0,0.7777777777777778,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Bilayer manganites: polarons in the midst of a metallic breakdown|F. Massee,S. de Jong. Y. Huang,W. K. Siu,I. Santoso,A. Mans,A. T. Boothroyd,D. Prabhakaran,R. Follath,A. Varykhalov,L. Patthey,M. Shi,J. B. Goedkoop,M. S. Golden###
(983735, 983735)
 By combining new photoemission andtunneling data, we show that in La2-2x<missing VAR>Sr12x<missing VAR>Mn2O7 the polaronic degrees offreedom win out across the CMR region of the phase diagram.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Bilayer manganites: polarons in the midst of a metallic breakdown|F. Massee,S. de Jong. Y. Huang,W. K. Siu,I. Santoso,A. Mans,A. T. Boothroyd,D. Prabhakaran,R. Follath,A. Varykhalov,L. Patthey,M. Shi,J. B. Goedkoop,M. S. Golden###
(983885, 983885)
 Thestacking number N is the key factor for true metallic behavior, as anintergrowth-driven breakdown of the polaronic domination to give a metalpossessing a traditional Fermi surface is seen in the bilayer system.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaAlO3
###Coexistence of superconductivity and ferromagnetism in two dimensions|D. A. Dikin,M. Mehta,C. W. Bark,C. M. Folkman,C. B. Eom,V. Chandrasekhar###
(984097, 984100)
 Here we report evidence for theircoexistence in a two-dimensional system the interface between two bulkinsulators, LaAlO3 (L<missing VAR>AO) and SrTiO3 (ST<missing VAR>O), a system that has been studiedintensively recently.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Coexistence of superconductivity and ferromagnetism in two dimensions|D. A. Dikin,M. Mehta,C. W. Bark,C. M. Folkman,C. B. Eom,V. Chandrasekhar###
(984105, 984105)
 Here we report evidence for theircoexistence in a two-dimensional system the interface between two bulkinsulators, LaAlO3 (L<missing VAR>AO) and SrTiO3 (ST<missing VAR>O), a system that has been studiedintensively recently.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Coexistence of superconductivity and ferromagnetism in two dimensions|D. A. Dikin,M. Mehta,C. W. Bark,C. M. Folkman,C. B. Eom,V. Chandrasekhar###
(984110, 984113)
 Here we report evidence for theircoexistence in a two-dimensional system the interface between two bulkinsulators, LaAlO3 (L<missing VAR>AO) and SrTiO3 (ST<missing VAR>O), a system that has been studiedintensively recently.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Coexistence of superconductivity and ferromagnetism in two dimensions|D. A. Dikin,M. Mehta,C. W. Bark,C. M. Folkman,C. B. Eom,V. Chandrasekhar###
(984116, 984116)
 Here we report evidence for theircoexistence in a two-dimensional system the interface between two bulkinsulators, LaAlO3 (L<missing VAR>AO) and SrTiO3 (ST<missing VAR>O), a system that has been studiedintensively recently.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Coexistence of superconductivity and ferromagnetism in two dimensions|D. A. Dikin,M. Mehta,C. W. Bark,C. M. Folkman,C. B. Eom,V. Chandrasekhar###
(984118, 984118)
 Here we report evidence for theircoexistence in a two-dimensional system the interface between two bulkinsulators, LaAlO3 (L<missing VAR>AO) and SrTiO3 (ST<missing VAR>O), a system that has been studiedintensively recently.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ba
###On the origin of non-monotonic doping dependence of the in-plane resistivity anisotropy in Ba(Fe$_{1-x}T_x$)$_2$As$_2$, $T$ = Co, Ni and Cu|Hsueh-Hui Kuo,Jiun-Haw Chu,Scott C. Riggs,Leo Yu,Peter L. McMahon,Kristiaan De Greve,Yoshihisa Yamamoto,James G. Analytis,Ian R. Fisher###
(984283, 984283)
On the origin of non-monotonic doping dependence of the in-plane resistivity anisotropy in Ba(Fe1-xTx)2As2, T<missing VAR>  Co, Ni and Cu.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe1
###On the origin of non-monotonic doping dependence of the in-plane resistivity anisotropy in Ba(Fe$_{1-x}T_x$)$_2$As$_2$, $T$ = Co, Ni and Cu|Hsueh-Hui Kuo,Jiun-Haw Chu,Scott C. Riggs,Leo Yu,Peter L. McMahon,Kristiaan De Greve,Yoshihisa Yamamoto,James G. Analytis,Ian R. Fisher###
(984285, 984286)
On the origin of non-monotonic doping dependence of the in-plane resistivity anisotropy in Ba(Fe1-xTx)2As2, T<missing VAR>  Co, Ni and Cu.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As2
###On the origin of non-monotonic doping dependence of the in-plane resistivity anisotropy in Ba(Fe$_{1-x}T_x$)$_2$As$_2$, $T$ = Co, Ni and Cu|Hsueh-Hui Kuo,Jiun-Haw Chu,Scott C. Riggs,Leo Yu,Peter L. McMahon,Kristiaan De Greve,Yoshihisa Yamamoto,James G. Analytis,Ian R. Fisher###
(984293, 984294)
On the origin of non-monotonic doping dependence of the in-plane resistivity anisotropy in Ba(Fe1-xTx)2As2, T<missing VAR>  Co, Ni and Cu.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###On the origin of non-monotonic doping dependence of the in-plane resistivity anisotropy in Ba(Fe$_{1-x}T_x$)$_2$As$_2$, $T$ = Co, Ni and Cu|Hsueh-Hui Kuo,Jiun-Haw Chu,Scott C. Riggs,Leo Yu,Peter L. McMahon,Kristiaan De Greve,Yoshihisa Yamamoto,James G. Analytis,Ian R. Fisher###
(984300, 984300)
On the origin of non-monotonic doping dependence of the in-plane resistivity anisotropy in Ba(Fe1-xTx)2As2, T<missing VAR>  Co, Ni and Cu.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###On the origin of non-monotonic doping dependence of the in-plane resistivity anisotropy in Ba(Fe$_{1-x}T_x$)$_2$As$_2$, $T$ = Co, Ni and Cu|Hsueh-Hui Kuo,Jiun-Haw Chu,Scott C. Riggs,Leo Yu,Peter L. McMahon,Kristiaan De Greve,Yoshihisa Yamamoto,James G. Analytis,Ian R. Fisher###
(984303, 984303)
On the origin of non-monotonic doping dependence of the in-plane resistivity anisotropy in Ba(Fe1-xTx)2As2, T<missing VAR>  Co, Ni and Cu.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###On the origin of non-monotonic doping dependence of the in-plane resistivity anisotropy in Ba(Fe$_{1-x}T_x$)$_2$As$_2$, $T$ = Co, Ni and Cu|Hsueh-Hui Kuo,Jiun-Haw Chu,Scott C. Riggs,Leo Yu,Peter L. McMahon,Kristiaan De Greve,Yoshihisa Yamamoto,James G. Analytis,Ian R. Fisher###
(984307, 984307)
On the origin of non-monotonic doping dependence of the in-plane resistivity anisotropy in Ba(Fe1-xTx)2As2, T<missing VAR>  Co, Ni and Cu.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ba
###On the origin of non-monotonic doping dependence of the in-plane resistivity anisotropy in Ba(Fe$_{1-x}T_x$)$_2$As$_2$, $T$ = Co, Ni and Cu|Hsueh-Hui Kuo,Jiun-Haw Chu,Scott C. Riggs,Leo Yu,Peter L. McMahon,Kristiaan De Greve,Yoshihisa Yamamoto,James G. Analytis,Ian R. Fisher###
(984337, 984337)
 The in-plane resistivity anisotropy has been measured for detwinned singlecrystals of Ba(Fe1-xNix)2As2 and Ba(Fe1-xCux)2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe1-xNi
###On the origin of non-monotonic doping dependence of the in-plane resistivity anisotropy in Ba(Fe$_{1-x}T_x$)$_2$As$_2$, $T$ = Co, Ni and Cu|Hsueh-Hui Kuo,Jiun-Haw Chu,Scott C. Riggs,Leo Yu,Peter L. McMahon,Kristiaan De Greve,Yoshihisa Yamamoto,James G. Analytis,Ian R. Fisher###
(984339, 984343)
 The in-plane resistivity anisotropy has been measured for detwinned singlecrystals of Ba(Fe1-xNix)2As2 and Ba(Fe1-xCux)2As2.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

As2
###On the origin of non-monotonic doping dependence of the in-plane resistivity anisotropy in Ba(Fe$_{1-x}T_x$)$_2$As$_2$, $T$ = Co, Ni and Cu|Hsueh-Hui Kuo,Jiun-Haw Chu,Scott C. Riggs,Leo Yu,Peter L. McMahon,Kristiaan De Greve,Yoshihisa Yamamoto,James G. Analytis,Ian R. Fisher###
(984347, 984348)
 The in-plane resistivity anisotropy has been measured for detwinned singlecrystals of Ba(Fe1-xNix)2As2 and Ba(Fe1-xCux)2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ba
###On the origin of non-monotonic doping dependence of the in-plane resistivity anisotropy in Ba(Fe$_{1-x}T_x$)$_2$As$_2$, $T$ = Co, Ni and Cu|Hsueh-Hui Kuo,Jiun-Haw Chu,Scott C. Riggs,Leo Yu,Peter L. McMahon,Kristiaan De Greve,Yoshihisa Yamamoto,James G. Analytis,Ian R. Fisher###
(984352, 984352)
 The in-plane resistivity anisotropy has been measured for detwinned singlecrystals of Ba(Fe1-xNix)2As2 and Ba(Fe1-xCux)2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe1-xCu
###On the origin of non-monotonic doping dependence of the in-plane resistivity anisotropy in Ba(Fe$_{1-x}T_x$)$_2$As$_2$, $T$ = Co, Ni and Cu|Hsueh-Hui Kuo,Jiun-Haw Chu,Scott C. Riggs,Leo Yu,Peter L. McMahon,Kristiaan De Greve,Yoshihisa Yamamoto,James G. Analytis,Ian R. Fisher###
(984354, 984358)
 The in-plane resistivity anisotropy has been measured for detwinned singlecrystals of Ba(Fe1-xNix)2As2 and Ba(Fe1-xCux)2As2.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

As2
###On the origin of non-monotonic doping dependence of the in-plane resistivity anisotropy in Ba(Fe$_{1-x}T_x$)$_2$As$_2$, $T$ = Co, Ni and Cu|Hsueh-Hui Kuo,Jiun-Haw Chu,Scott C. Riggs,Leo Yu,Peter L. McMahon,Kristiaan De Greve,Yoshihisa Yamamoto,James G. Analytis,Ian R. Fisher###
(984362, 984363)
 The in-plane resistivity anisotropy has been measured for detwinned singlecrystals of Ba(Fe1-xNix)2As2 and Ba(Fe1-xCux)2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ba
###On the origin of non-monotonic doping dependence of the in-plane resistivity anisotropy in Ba(Fe$_{1-x}T_x$)$_2$As$_2$, $T$ = Co, Ni and Cu|Hsueh-Hui Kuo,Jiun-Haw Chu,Scott C. Riggs,Leo Yu,Peter L. McMahon,Kristiaan De Greve,Yoshihisa Yamamoto,James G. Analytis,Ian R. Fisher###
(984395, 984395)
The data reveal a non-monotonic doping dependence, similar to previousobservations for Ba(Fe1-xCox)2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe1-xCo
###On the origin of non-monotonic doping dependence of the in-plane resistivity anisotropy in Ba(Fe$_{1-x}T_x$)$_2$As$_2$, $T$ = Co, Ni and Cu|Hsueh-Hui Kuo,Jiun-Haw Chu,Scott C. Riggs,Leo Yu,Peter L. McMahon,Kristiaan De Greve,Yoshihisa Yamamoto,James G. Analytis,Ian R. Fisher###
(984397, 984401)
The data reveal a non-monotonic doping dependence, similar to previousobservations for Ba(Fe1-xCox)2As2.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

As2
###On the origin of non-monotonic doping dependence of the in-plane resistivity anisotropy in Ba(Fe$_{1-x}T_x$)$_2$As$_2$, $T$ = Co, Ni and Cu|Hsueh-Hui Kuo,Jiun-Haw Chu,Scott C. Riggs,Leo Yu,Peter L. McMahon,Kristiaan De Greve,Yoshihisa Yamamoto,James G. Analytis,Ian R. Fisher###
(984405, 984406)
The data reveal a non-monotonic doping dependence, similar to previousobservations for Ba(Fe1-xCox)2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FS
###On the origin of non-monotonic doping dependence of the in-plane resistivity anisotropy in Ba(Fe$_{1-x}T_x$)$_2$As$_2$, $T$ = Co, Ni and Cu|Hsueh-Hui Kuo,Jiun-Haw Chu,Scott C. Riggs,Leo Yu,Peter L. McMahon,Kristiaan De Greve,Yoshihisa Yamamoto,James G. Analytis,Ian R. Fisher###
(984634, 984635)
 Progressive suppression of the contribution to the conductivityarising from this isotropic pocket with chemical substitution eventuallyreveals the underlying in-plane anisotropy associated with the remaining FSpockets.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoCoO
###Giant Positive Magnetoresistance in Co@CoO Nanoparticle Arrays|Hui Xing,Wenjie Kong,Chaehyun Kim,Sheng Peng,Shouheng Sun,Zhu-An Xu,Hao Zeng###
(984657, 984659)
Giant Positive Magnetoresistance in CoCoO Nanoparticle Arrays.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 100, 'K', 1],[166.0, 1, ',', 4],[168.0, 400, '%', 4],[176.0, 10, 'K', 4]

CoCoO
###Giant Positive Magnetoresistance in Co@CoO Nanoparticle Arrays|Hui Xing,Wenjie Kong,Chaehyun Kim,Sheng Peng,Shouheng Sun,Zhu-An Xu,Hao Zeng###
(984682, 984684)
 We report the magnetotransport properties of self-assembled CoCoOnanoparticle arrays at temperatures below 100 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 100, 'K', 0],[141.0, 1, ',', 3],[143.0, 400, '%', 3],[151.0, 10, 'K', 3]

N
###Spin-filtering and Disorder Induced Giant Magnetoresistance in Carbon Nanotubes: Ab Initio Calculations|J. M. de Almeida,A. R. Rocha,A. J. R. da Silva,A. Fazzio###
(985038, 985038)
 Its<missing VAR> well known that many porphyrins have transitionmetal atoms, and we have explored transition metal atoms bonded to thoseporphyrin-like defects in N-doped carbon nanotubes.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 100, '%', 3],[203.0, 20000, '%', 4]

B
###Spin-filtering and Disorder Induced Giant Magnetoresistance in Carbon Nanotubes: Ab Initio Calculations|J. M. de Almeida,A. R. Rocha,A. J. R. da Silva,A. Fazzio###
(985104, 985104)
 The results determined the HemeB-like defect (an iron atom bonded to four nitrogens) as the most stable andwith a higher polarization current for a single defect.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 100, '%', 1],[137.0, 20000, '%', 2]

B
###Spin-filtering and Disorder Induced Giant Magnetoresistance in Carbon Nanotubes: Ab Initio Calculations|J. M. de Almeida,A. R. Rocha,A. J. R. da Silva,A. Fazzio###
(985165, 985165)
 With randomlypositioned Heme B-defects in a few hundred nanometers long nanotubes thepolarization reaches near 100% meaning an effective spin filter.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 100, '%', 0],[76.0, 20000, '%', 1]

La5
###Neutron scattering study of magnetic phase separation in nanocrystalline La$_{5/8}$Ca$_{3/8}$MnO$_3$|Chetan Dhital,Clarina de la Cruz,C. Opeil,A. Treat,K. F. Wang,J. -M. Liu,Z. F. Ren,Stephen D. Wilson###
(985283, 985284)
Neutron scattering study of magnetic phase separation in nanocrystalline La5/8Ca3/8MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ca3
###Neutron scattering study of magnetic phase separation in nanocrystalline La$_{5/8}$Ca$_{3/8}$MnO$_3$|Chetan Dhital,Clarina de la Cruz,C. Opeil,A. Treat,K. F. Wang,J. -M. Liu,Z. F. Ren,Stephen D. Wilson###
(985287, 985288)
Neutron scattering study of magnetic phase separation in nanocrystalline La5/8Ca3/8MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnO3
###Neutron scattering study of magnetic phase separation in nanocrystalline La$_{5/8}$Ca$_{3/8}$MnO$_3$|Chetan Dhital,Clarina de la Cruz,C. Opeil,A. Treat,K. F. Wang,J. -M. Liu,Z. F. Ren,Stephen D. Wilson###
(985291, 985293)
Neutron scattering study of magnetic phase separation in nanocrystalline La5/8Ca3/8MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Neutron scattering study of magnetic phase separation in nanocrystalline La$_{5/8}$Ca$_{3/8}$MnO$_3$|Chetan Dhital,Clarina de la Cruz,C. Opeil,A. Treat,K. F. Wang,J. -M. Liu,Z. F. Ren,Stephen D. Wilson###
(985326, 985326)
 We demonstrate that magnetic phase separation and competing spin order in thecolossal magnetoresistive (CMR) manganites can be directly explored via tuningstrain in bulk samples of nanocrystalline La1-xCax<missing VAR>MnO3.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La1-xCa
###Neutron scattering study of magnetic phase separation in nanocrystalline La$_{5/8}$Ca$_{3/8}$MnO$_3$|Chetan Dhital,Clarina de la Cruz,C. Opeil,A. Treat,K. F. Wang,J. -M. Liu,Z. F. Ren,Stephen D. Wilson###
(985358, 985362)
 We demonstrate that magnetic phase separation and competing spin order in thecolossal magnetoresistive (CMR) manganites can be directly explored via tuningstrain in bulk samples of nanocrystalline La1-xCax<missing VAR>MnO3.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

MnO3
###Neutron scattering study of magnetic phase separation in nanocrystalline La$_{5/8}$Ca$_{3/8}$MnO$_3$|Chetan Dhital,Clarina de la Cruz,C. Opeil,A. Treat,K. F. Wang,J. -M. Liu,Z. F. Ren,Stephen D. Wilson###
(985364, 985366)
 We demonstrate that magnetic phase separation and competing spin order in thecolossal magnetoresistive (CMR) manganites can be directly explored via tuningstrain in bulk samples of nanocrystalline La1-xCax<missing VAR>MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La5
###Neutron scattering study of magnetic phase separation in nanocrystalline La$_{5/8}$Ca$_{3/8}$MnO$_3$|Chetan Dhital,Clarina de la Cruz,C. Opeil,A. Treat,K. F. Wang,J. -M. Liu,Z. F. Ren,Stephen D. Wilson###
(985424, 985425)
 Our resultsshow that strain can be reversibly frozen into the lattice in order tostabilize coexisting antiferromagnetic domains within the nominallyferromagnetic metallic state of La5/8Ca3/8MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ca3
###Neutron scattering study of magnetic phase separation in nanocrystalline La$_{5/8}$Ca$_{3/8}$MnO$_3$|Chetan Dhital,Clarina de la Cruz,C. Opeil,A. Treat,K. F. Wang,J. -M. Liu,Z. F. Ren,Stephen D. Wilson###
(985428, 985429)
 Our resultsshow that strain can be reversibly frozen into the lattice in order tostabilize coexisting antiferromagnetic domains within the nominallyferromagnetic metallic state of La5/8Ca3/8MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnO3
###Neutron scattering study of magnetic phase separation in nanocrystalline La$_{5/8}$Ca$_{3/8}$MnO$_3$|Chetan Dhital,Clarina de la Cruz,C. Opeil,A. Treat,K. F. Wang,J. -M. Liu,Z. F. Ren,Stephen D. Wilson###
(985432, 985434)
 Our resultsshow that strain can be reversibly frozen into the lattice in order tostabilize coexisting antiferromagnetic domains within the nominallyferromagnetic metallic state of La5/8Ca3/8MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Neutron scattering study of magnetic phase separation in nanocrystalline La$_{5/8}$Ca$_{3/8}$MnO$_3$|Chetan Dhital,Clarina de la Cruz,C. Opeil,A. Treat,K. F. Wang,J. -M. Liu,Z. F. Ren,Stephen D. Wilson###
(985500, 985500)
 The measurement oftunable phase separation via magnetic neutron powder diffraction presents adirect route of exploring the correlated spin properties of phase separatedcharge/magnetic order in highly strained CMR materials and opens a potentialavenue for realizing intergrain spin tunnel junction networks with enhanced CMRbehavior in a chemically homogeneous material.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Neutron scattering study of magnetic phase separation in nanocrystalline La$_{5/8}$Ca$_{3/8}$MnO$_3$|Chetan Dhital,Clarina de la Cruz,C. Opeil,A. Treat,K. F. Wang,J. -M. Liu,Z. F. Ren,Stephen D. Wilson###
(985535, 985535)
 The measurement oftunable phase separation via magnetic neutron powder diffraction presents adirect route of exploring the correlated spin properties of phase separatedcharge/magnetic order in highly strained CMR materials and opens a potentialavenue for realizing intergrain spin tunnel junction networks with enhanced CMRbehavior in a chemically homogeneous material.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFe(B)
###The Kondo effect in magnetic impurities and ferromagnetic contacts|Hyunsoo Yang,See-Hun Yang,Grzegorz Ilnicki,Jan Martinek,Stuart S. P. Parkin###
(985615, 985619)
 Planar macroscopic magnetic tunnel junctions exhibit well defined zero biasanomalies when a thin layer of ferromagnetic CoFe(B) nanodots is insertedwithin a MgO based tunnel barrier.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###The Kondo effect in magnetic impurities and ferromagnetic contacts|Hyunsoo Yang,See-Hun Yang,Grzegorz Ilnicki,Jan Martinek,Stuart S. P. Parkin###
(985632, 985633)
 Planar macroscopic magnetic tunnel junctions exhibit well defined zero biasanomalies when a thin layer of ferromagnetic CoFe(B) nanodots is insertedwithin a MgO based tunnel barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Effect of Fe substitution on the magnetic, transport, thermal and magnetocaloric properties in Ni50Mn38-xFexSb12 Heusler alloys|Roshnee Sahoo,Ajaya K. Nayak,K. G. Suresh,A. K. Nigam###
(986212, 986212)
Effect of Fe substitution on the magnetic, transport, thermal and magnetocaloric properties in Ni50Mn38-xFexSb12 Heusler alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[210.0, 4.0, 'A', 4],[224.0, 14.2, 'J', 4],[240.0, 288, 'K', 4],[243.0, 50, 'kOe', 4],[278.0, 6, ',', 5],[305.0, 21, '%', 6],[320.0, 50, 'kOe', 6],[343.0, 288, 'Oe', 7]

Ni50Mn38-x
###Effect of Fe substitution on the magnetic, transport, thermal and magnetocaloric properties in Ni50Mn38-xFexSb12 Heusler alloys|Roshnee Sahoo,Ajaya K. Nayak,K. G. Suresh,A. K. Nigam###
(986236, 986241)
Effect of Fe substitution on the magnetic, transport, thermal and magnetocaloric properties in Ni50Mn38-xFexSb12 Heusler alloys.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[181.0, 4.0, 'A', 4],[195.0, 14.2, 'J', 4],[211.0, 288, 'K', 4],[214.0, 50, 'kOe', 4],[249.0, 6, ',', 5],[276.0, 21, '%', 6],[291.0, 50, 'kOe', 6],[314.0, 288, 'Oe', 7]

Sb12
###Effect of Fe substitution on the magnetic, transport, thermal and magnetocaloric properties in Ni50Mn38-xFexSb12 Heusler alloys|Roshnee Sahoo,Ajaya K. Nayak,K. G. Suresh,A. K. Nigam###
(986243, 986244)
Effect of Fe substitution on the magnetic, transport, thermal and magnetocaloric properties in Ni50Mn38-xFexSb12 Heusler alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 4.0, 'A', 4],[192.0, 14.2, 'J', 4],[208.0, 288, 'K', 4],[211.0, 50, 'kOe', 4],[246.0, 6, ',', 5],[273.0, 21, '%', 6],[288.0, 50, 'kOe', 6],[311.0, 288, 'Oe', 7]

Ni50Mn38-x
###Effect of Fe substitution on the magnetic, transport, thermal and magnetocaloric properties in Ni50Mn38-xFexSb12 Heusler alloys|Roshnee Sahoo,Ajaya K. Nayak,K. G. Suresh,A. K. Nigam###
(986279, 986284)
 The structural, magnetic, transport, thermal and magnetothermal properties ofquaternary Heusler alloys Ni50Mn38-xFexSb12 have been studied.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[138.0, 4.0, 'A', 3],[152.0, 14.2, 'J', 3],[168.0, 288, 'K', 3],[171.0, 50, 'kOe', 3],[206.0, 6, ',', 4],[233.0, 21, '%', 5],[248.0, 50, 'kOe', 5],[271.0, 288, 'Oe', 6]

Sb12
###Effect of Fe substitution on the magnetic, transport, thermal and magnetocaloric properties in Ni50Mn38-xFexSb12 Heusler alloys|Roshnee Sahoo,Ajaya K. Nayak,K. G. Suresh,A. K. Nigam###
(986286, 986287)
 The structural, magnetic, transport, thermal and magnetothermal properties ofquaternary Heusler alloys Ni50Mn38-xFexSb12 have been studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 4.0, 'A', 3],[149.0, 14.2, 'J', 3],[165.0, 288, 'K', 3],[168.0, 50, 'kOe', 3],[203.0, 6, ',', 4],[230.0, 21, '%', 5],[245.0, 50, 'kOe', 5],[268.0, 288, 'Oe', 6]

Fe
###Effect of Fe substitution on the magnetic, transport, thermal and magnetocaloric properties in Ni50Mn38-xFexSb12 Heusler alloys|Roshnee Sahoo,Ajaya K. Nayak,K. G. Suresh,A. K. Nigam###
(986328, 986328)
 Powder x<missing VAR>-raydiffraction and temperature dependence of magnetization studies reveal thatwith addition of Fe in Mn site, the martensitic transition shifts to lowertemperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 4.0, 'A', 2],[108.0, 14.2, 'J', 2],[124.0, 288, 'K', 2],[127.0, 50, 'kOe', 2],[162.0, 6, ',', 3],[189.0, 21, '%', 4],[204.0, 50, 'kOe', 4],[227.0, 288, 'Oe', 5]

Mn
###Effect of Fe substitution on the magnetic, transport, thermal and magnetocaloric properties in Ni50Mn38-xFexSb12 Heusler alloys|Roshnee Sahoo,Ajaya K. Nayak,K. G. Suresh,A. K. Nigam###
(986332, 986332)
 Powder x<missing VAR>-raydiffraction and temperature dependence of magnetization studies reveal thatwith addition of Fe in Mn site, the martensitic transition shifts to lowertemperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 4.0, 'A', 2],[104.0, 14.2, 'J', 2],[120.0, 288, 'K', 2],[123.0, 50, 'kOe', 2],[158.0, 6, ',', 3],[185.0, 21, '%', 4],[200.0, 50, 'kOe', 4],[223.0, 288, 'Oe', 5]

Fe
###Effect of Fe substitution on the magnetic, transport, thermal and magnetocaloric properties in Ni50Mn38-xFexSb12 Heusler alloys|Roshnee Sahoo,Ajaya K. Nayak,K. G. Suresh,A. K. Nigam###
(986380, 986380)
 It is also found that the martensitic transition becomes broaderfor the higher Fe concentrations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 4.0, 'A', 1],[56.0, 14.2, 'J', 1],[72.0, 288, 'K', 1],[75.0, 50, 'kOe', 1],[110.0, 6, ',', 2],[137.0, 21, '%', 3],[152.0, 50, 'kOe', 3],[175.0, 288, 'Oe', 4]

(H)
###Effect of Fe substitution on the magnetic, transport, thermal and magnetocaloric properties in Ni50Mn38-xFexSb12 Heusler alloys|Roshnee Sahoo,Ajaya K. Nayak,K. G. Suresh,A. K. Nigam###
(986394, 986396)
 The metamagnetic transition in M<missing VAR>(H) isothermsbecomes very prominent in x<missing VAR>2 and vanishes for x<missing VAR>3 and 4. A maximum positivemagnetic entropy change of 14.2 J/kg K is observed for x<missing VAR>2 at 288 K for 50 kOe.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 4.0, 'A', 0],[40.0, 14.2, 'J', 0],[56.0, 288, 'K', 0],[59.0, 50, 'kOe', 0],[94.0, 6, ',', 1],[121.0, 21, '%', 2],[136.0, 50, 'kOe', 2],[159.0, 288, 'Oe', 3]

K
###Effect of Fe substitution on the magnetic, transport, thermal and magnetocaloric properties in Ni50Mn38-xFexSb12 Heusler alloys|Roshnee Sahoo,Ajaya K. Nayak,K. G. Suresh,A. K. Nigam###
(986440, 986440)
 The metamagnetic transition in M<missing VAR>(H) isothermsbecomes very prominent in x<missing VAR>2 and vanishes for x<missing VAR>3 and 4. A maximum positivemagnetic entropy change of 14.2 J/kg K is observed for x<missing VAR>2 at 288 K for 50 kOe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 4.0, 'A', 0],[4.0, 14.2, 'J', 0],[12.0, 288, 'K', 0],[15.0, 50, 'kOe', 0],[50.0, 6, ',', 1],[77.0, 21, '%', 2],[92.0, 50, 'kOe', 2],[115.0, 288, 'Oe', 3]

Fe3O4
###Fourfold Symmetry of Anisotropic Magnetoresistance in Epitaxial Fe3O4 Thin Films|C. R. Hu,J. Zhu,G. Chen,J. X. Li,Y. Z. Wu###
(986888, 986891)
Fourfold Symmetry of Anisotropic Magnetoresistance in Epitaxial Fe3O4 Thin Films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 200, 'K', 2]

PH
###Fourfold Symmetry of Anisotropic Magnetoresistance in Epitaxial Fe3O4 Thin Films|C. R. Hu,J. Zhu,G. Chen,J. X. Li,Y. Z. Wu###
(986930, 986931)
 We studied the angular dependence of anisotropic magnetoresistance (AMR) andPlanar Hall effect (PHE) at various temperatures in high quality epitaxialFe3O4 films grown on MgO(001) substrates.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 200, 'K', 1]

Fe3O4
###Fourfold Symmetry of Anisotropic Magnetoresistance in Epitaxial Fe3O4 Thin Films|C. R. Hu,J. Zhu,G. Chen,J. X. Li,Y. Z. Wu###
(986950, 986953)
 We studied the angular dependence of anisotropic magnetoresistance (AMR) andPlanar Hall effect (PHE) at various temperatures in high quality epitaxialFe3O4 films grown on MgO(001) substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 200, 'K', 1]

PH
###Fourfold Symmetry of Anisotropic Magnetoresistance in Epitaxial Fe3O4 Thin Films|C. R. Hu,J. Zhu,G. Chen,J. X. Li,Y. Z. Wu###
(986972, 986973)
 The PHE<missing VAR> contains only a twofoldangular dependence, but the AMR below 200K is constituted with both twofold andfourfold symmetric terms.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 200, 'K', 0]

PH
###Fourfold Symmetry of Anisotropic Magnetoresistance in Epitaxial Fe3O4 Thin Films|C. R. Hu,J. Zhu,G. Chen,J. X. Li,Y. Z. Wu###
(987167, 987168)
 Our results indicate the AMR and PHE<missing VAR> insingle crystalline films have different origins, and also prove that the originof the four-fold symmetry of AMR is related to the lattice symmetry rather thanthe spin scattering near the antiphase boundaries.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[168.0, 200, 'K', 4]

S
###Current induced anisotropic magnetoresistance in topological insulator films|Jian Wang,Handong Li,Cui-Zu Chang,Ke He,Joon Sue Lee,Xu-Cun Ma,Nitin Samarth,Qi-Kun Xue,Maohai Xie,M. H. W. Chan###
(987350, 987350)
 Theexistence of these surface states has been confirmed by angle-resolvedphotoemission spectroscopy (ARPES) and scanning tunneling microscopy (STM).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Current induced anisotropic magnetoresistance in topological insulator films|Jian Wang,Handong Li,Cui-Zu Chang,Ke He,Joon Sue Lee,Xu-Cun Ma,Nitin Samarth,Qi-Kun Xue,Maohai Xie,M. H. W. Chan###
(987362, 987362)
 Theexistence of these surface states has been confirmed by angle-resolvedphotoemission spectroscopy (ARPES) and scanning tunneling microscopy (STM).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Se3
###Current induced anisotropic magnetoresistance in topological insulator films|Jian Wang,Handong Li,Cui-Zu Chang,Ke He,Joon Sue Lee,Xu-Cun Ma,Nitin Samarth,Qi-Kun Xue,Maohai Xie,M. H. W. Chan###
(987452, 987455)
 Here, we report a detailed electronic transport study in high qualityBi2Se3 topological insulator thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

IrMn/NiFe
###Electrical measurement of antiferromagnetic moments in exchange-coupled IrMn/NiFe stacks|X. Marti,B. G. Park,J. Wunderlich,H. Reichlova,Y. Kurosaki,M. Yamada,H. Yamamoto,A. Nishide,J. Hayakawa,H. Takahashi,T. Jungwirth###
(987585, 987589)
Electrical measurement of antiferromagnetic moments in exchange-coupled IrMn/NiFe stacks.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

IrMn
###Electrical measurement of antiferromagnetic moments in exchange-coupled IrMn/NiFe stacks|X. Marti,B. G. Park,J. Wunderlich,H. Reichlova,Y. Kurosaki,M. Yamada,H. Yamamoto,A. Nishide,J. Hayakawa,H. Takahashi,T. Jungwirth###
(987632, 987633)
 We employ the recently discovered antiferromagnetic tunneling anisotropicmagnetoresistance to study the behavior of antiferromagnetically orderedmoments in IrMn exchange coupled to NiFe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiFe
###Electrical measurement of antiferromagnetic moments in exchange-coupled IrMn/NiFe stacks|X. Marti,B. G. Park,J. Wunderlich,H. Reichlova,Y. Kurosaki,M. Yamada,H. Yamamoto,A. Nishide,J. Hayakawa,H. Takahashi,T. Jungwirth###
(987641, 987642)
 We employ the recently discovered antiferromagnetic tunneling anisotropicmagnetoresistance to study the behavior of antiferromagnetically orderedmoments in IrMn exchange coupled to NiFe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiFe
###Electrical measurement of antiferromagnetic moments in exchange-coupled IrMn/NiFe stacks|X. Marti,B. G. Park,J. Wunderlich,H. Reichlova,Y. Kurosaki,M. Yamada,H. Yamamoto,A. Nishide,J. Hayakawa,H. Takahashi,T. Jungwirth###
(987689, 987690)
 Experiments performed by commonlaboratory tools for magnetization and electrical transport measurements allowus to directly link the broadening of the NiFe hysteresis loop and its shift(exchange bias) to the rotation and pinning of antiferromagnetic moments inIrMn.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

IrMn
###Electrical measurement of antiferromagnetic moments in exchange-coupled IrMn/NiFe stacks|X. Marti,B. G. Park,J. Wunderlich,H. Reichlova,Y. Kurosaki,M. Yamada,H. Yamamoto,A. Nishide,J. Hayakawa,H. Takahashi,T. Jungwirth###
(987728, 987729)
 Experiments performed by commonlaboratory tools for magnetization and electrical transport measurements allowus to directly link the broadening of the NiFe hysteresis loop and its shift(exchange bias) to the rotation and pinning of antiferromagnetic moments inIrMn.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Electrical measurement of antiferromagnetic moments in exchange-coupled IrMn/NiFe stacks|X. Marti,B. G. Park,J. Wunderlich,H. Reichlova,Y. Kurosaki,M. Yamada,H. Yamamoto,A. Nishide,J. Hayakawa,H. Takahashi,T. Jungwirth###
(987732, 987732)
 At higher temperatures, the broadened loops show zero shift whichcorrelates with the observation of fully rotating antiferromagnetic momentsinside the IrMn film.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

IrMn
###Electrical measurement of antiferromagnetic moments in exchange-coupled IrMn/NiFe stacks|X. Marti,B. G. Park,J. Wunderlich,H. Reichlova,Y. Kurosaki,M. Yamada,H. Yamamoto,A. Nishide,J. Hayakawa,H. Takahashi,T. Jungwirth###
(987777, 987778)
 At higher temperatures, the broadened loops show zero shift whichcorrelates with the observation of fully rotating antiferromagnetic momentsinside the IrMn film.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

IrMn
###Electrical measurement of antiferromagnetic moments in exchange-coupled IrMn/NiFe stacks|X. Marti,B. G. Park,J. Wunderlich,H. Reichlova,Y. Kurosaki,M. Yamada,H. Yamamoto,A. Nishide,J. Hayakawa,H. Takahashi,T. Jungwirth###
(987829, 987830)
 The onset of exchange bias at lower temperatures islinked to a partial rotation between distinct metastable states and pinning ofthe IrMn antiferromagnetic moments in these states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Microwave-induced resistance oscillations and zero-resistance states in 2D electron systems with two occupied subbands|Jesus Inarrea,Gloria Platero###
(988254, 988254)
 In the same results, resistance presents a peculiar shapewhich appears to have a built-in interference effect not observed before.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 2, 'D', 2]

BaPb1-x
###Field-Tuned Superconductor-Insulator Transition in BaPb1-xBixO3|P. Giraldo-Gallo,H. Lee,Y. Zhang,M. J. Kramer,M. R. Beasley,T. H. Geballe,I. R. Fisher###
(988499, 988503)
Field-Tuned Superconductor-Insulator Transition in BaPb1-xBixO3.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

O3
###Field-Tuned Superconductor-Insulator Transition in BaPb1-xBixO3|P. Giraldo-Gallo,H. Lee,Y. Zhang,M. J. Kramer,M. R. Beasley,T. H. Geballe,I. R. Fisher###
(988505, 988506)
Field-Tuned Superconductor-Insulator Transition in BaPb1-xBixO3.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BaPb1-xBi
###Field-Tuned Superconductor-Insulator Transition in BaPb1-xBixO3|P. Giraldo-Gallo,H. Lee,Y. Zhang,M. J. Kramer,M. R. Beasley,T. H. Geballe,I. R. Fisher###
(988509, 988514)
 BaPb1-xBix<missing VAR>O3 is found to exhibit a field-tuned superconductor toinsulator transition for Bi compositions 0.24 leq x<missing VAR> leq 0.29.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

O3
###Field-Tuned Superconductor-Insulator Transition in BaPb1-xBixO3|P. Giraldo-Gallo,H. Lee,Y. Zhang,M. J. Kramer,M. R. Beasley,T. H. Geballe,I. R. Fisher###
(988516, 988517)
 BaPb1-xBix<missing VAR>O3 is found to exhibit a field-tuned superconductor toinsulator transition for Bi compositions 0.24 leq x<missing VAR> leq 0.29.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi
###Field-Tuned Superconductor-Insulator Transition in BaPb1-xBixO3|P. Giraldo-Gallo,H. Lee,Y. Zhang,M. J. Kramer,M. R. Beasley,T. H. Geballe,I. R. Fisher###
(988544, 988544)
 BaPb1-xBix<missing VAR>O3 is found to exhibit a field-tuned superconductor toinsulator transition for Bi compositions 0.24 leq x<missing VAR> leq 0.29.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Field-Tuned Superconductor-Insulator Transition in BaPb1-xBixO3|P. Giraldo-Gallo,H. Lee,Y. Zhang,M. J. Kramer,M. R. Beasley,T. H. Geballe,I. R. Fisher###
(988600, 988600)
 Themagnetoresistance of optimally doped samples manifests atemperature-independent crossing point and scaling of the formrho(T<missing VAR>,H)rhoc<missing VAR> F(H-HcT-1/z<missing VAR>nu), where Hc<missing VAR> is the field determinedby the temperature-independent crossing point, and z<missing VAR>nu  0.69 pm 0.03.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Field-Tuned Superconductor-Insulator Transition in BaPb1-xBixO3|P. Giraldo-Gallo,H. Lee,Y. Zhang,M. J. Kramer,M. R. Beasley,T. H. Geballe,I. R. Fisher###
(988605, 988605)
 Themagnetoresistance of optimally doped samples manifests atemperature-independent crossing point and scaling of the formrho(T<missing VAR>,H)rhoc<missing VAR> F(H-HcT-1/z<missing VAR>nu), where Hc<missing VAR> is the field determinedby the temperature-independent crossing point, and z<missing VAR>nu  0.69 pm 0.03.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Field-Tuned Superconductor-Insulator Transition in BaPb1-xBixO3|P. Giraldo-Gallo,H. Lee,Y. Zhang,M. J. Kramer,M. R. Beasley,T. H. Geballe,I. R. Fisher###
(988607, 988607)
 Themagnetoresistance of optimally doped samples manifests atemperature-independent crossing point and scaling of the formrho(T<missing VAR>,H)rhoc<missing VAR> F(H-HcT-1/z<missing VAR>nu), where Hc<missing VAR> is the field determinedby the temperature-independent crossing point, and z<missing VAR>nu  0.69 pm 0.03.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Field-Tuned Superconductor-Insulator Transition in BaPb1-xBixO3|P. Giraldo-Gallo,H. Lee,Y. Zhang,M. J. Kramer,M. R. Beasley,T. H. Geballe,I. R. Fisher###
(988609, 988609)
 Themagnetoresistance of optimally doped samples manifests atemperature-independent crossing point and scaling of the formrho(T<missing VAR>,H)rhoc<missing VAR> F(H-HcT-1/z<missing VAR>nu), where Hc<missing VAR> is the field determinedby the temperature-independent crossing point, and z<missing VAR>nu  0.69 pm 0.03.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Field-Tuned Superconductor-Insulator Transition in BaPb1-xBixO3|P. Giraldo-Gallo,H. Lee,Y. Zhang,M. J. Kramer,M. R. Beasley,T. H. Geballe,I. R. Fisher###
(988622, 988622)
 Themagnetoresistance of optimally doped samples manifests atemperature-independent crossing point and scaling of the formrho(T<missing VAR>,H)rhoc<missing VAR> F(H-HcT-1/z<missing VAR>nu), where Hc<missing VAR> is the field determinedby the temperature-independent crossing point, and z<missing VAR>nu  0.69 pm 0.03.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nb
###Reversible room-temperature ferromagnetism in Nb-doped SrTiO3 single crystals|Z. Q. Liu,W. M. Lu,S. L. Lim,X. P. Qiu,N. N. Bao,M. Motapothula,J. B. Yi,M. Yang,S. Dhar,T. Venkatesan,Ariando###
(988780, 988780)
Reversible room-temperature ferromagnetism in Nb-doped SrTiO3 single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Reversible room-temperature ferromagnetism in Nb-doped SrTiO3 single crystals|Z. Q. Liu,W. M. Lu,S. L. Lim,X. P. Qiu,N. N. Bao,M. Motapothula,J. B. Yi,M. Yang,S. Dhar,T. Venkatesan,Ariando###
(988784, 988787)
Reversible room-temperature ferromagnetism in Nb-doped SrTiO3 single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nb
###Reversible room-temperature ferromagnetism in Nb-doped SrTiO3 single crystals|Z. Q. Liu,W. M. Lu,S. L. Lim,X. P. Qiu,N. N. Bao,M. Motapothula,J. B. Yi,M. Yang,S. Dhar,T. Venkatesan,Ariando###
(988845, 988845)
 Room-temperature ferromagnetismobserved in Nb-doped SrTiO3 single crystals is reported in this RapidCommunication.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Reversible room-temperature ferromagnetism in Nb-doped SrTiO3 single crystals|Z. Q. Liu,W. M. Lu,S. L. Lim,X. P. Qiu,N. N. Bao,M. Motapothula,J. B. Yi,M. Yang,S. Dhar,T. Venkatesan,Ariando###
(988849, 988852)
 Room-temperature ferromagnetismobserved in Nb-doped SrTiO3 single crystals is reported in this RapidCommunication.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Reversible room-temperature ferromagnetism in Nb-doped SrTiO3 single crystals|Z. Q. Liu,W. M. Lu,S. L. Lim,X. P. Qiu,N. N. Bao,M. Motapothula,J. B. Yi,M. Yang,S. Dhar,T. Venkatesan,Ariando###
(988995, 988995)
 In addition, hystereticmagnetoresistance was observed for magnetic field parallel to current,indicating that the magnetic moments are in the plane of the samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Giant resistance change across the phase transition in spin crossover molecules|N. Baadji,S. Sanvito###
(989247, 989247)
 At the spin crossover phase transitionthere is a drastic change in the electronic gap between the frontier molecularorbitals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 3, ',', 2]

As
###Giant resistance change across the phase transition in spin crossover molecules|N. Baadji,S. Sanvito###
(989290, 989290)
 As a consequence, when the molecule is incorporated in a two terminaldevice, the current increases by up to four orders of magnitude in response tothe spin change.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 3, ',', 1]

CeTiGe
###Huge First-Order Metamagnetic Transition in the Paramagnetic Heavy-Fermion System CeTiGe|Micha Deppe,Stefan Lausberg,Franziska Weickert,Manuel Brando,Yurii Skourski,Nubia Caroca-Canales,Chistoph Geibel,Frank Steglich###
(989486, 989488)
Huge First-Order Metamagnetic Transition in the Paramagnetic Heavy-Fermion System CeTiGe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 0.74, ',', 1],[123.0, 12.5, ',', 1]

Ce
###Huge First-Order Metamagnetic Transition in the Paramagnetic Heavy-Fermion System CeTiGe|Micha Deppe,Stefan Lausberg,Franziska Weickert,Manuel Brando,Yurii Skourski,Nubia Caroca-Canales,Chistoph Geibel,Frank Steglich###
(989532, 989532)
 We report on the observation of large, step-like anomalies in themagnetization (Delta M<missing VAR>  0.74,murm B/Ce), in the magnetostriction(Delta l/l0  2.0 cdot 10-3), and in the magnetoresistance inpolycrystals of the paramagnetic heavy-fermion system CeTiGe at a criticalmagnetic field mu0 Hc<missing VAR> approx  12.5,T<missing VAR> at low temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 0.74, ',', 0],[79.0, 12.5, ',', 0]

CeTiGe
###Huge First-Order Metamagnetic Transition in the Paramagnetic Heavy-Fermion System CeTiGe|Micha Deppe,Stefan Lausberg,Franziska Weickert,Manuel Brando,Yurii Skourski,Nubia Caroca-Canales,Chistoph Geibel,Frank Steglich###
(989587, 989589)
 We report on the observation of large, step-like anomalies in themagnetization (Delta M<missing VAR>  0.74,murm B/Ce), in the magnetostriction(Delta l/l0  2.0 cdot 10-3), and in the magnetoresistance inpolycrystals of the paramagnetic heavy-fermion system CeTiGe at a criticalmagnetic field mu0 Hc<missing VAR> approx  12.5,T<missing VAR> at low temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 0.74, ',', 0],[22.0, 12.5, ',', 0]

H
###Huge First-Order Metamagnetic Transition in the Paramagnetic Heavy-Fermion System CeTiGe|Micha Deppe,Stefan Lausberg,Franziska Weickert,Manuel Brando,Yurii Skourski,Nubia Caroca-Canales,Chistoph Geibel,Frank Steglich###
(989605, 989605)
 We report on the observation of large, step-like anomalies in themagnetization (Delta M<missing VAR>  0.74,murm B/Ce), in the magnetostriction(Delta l/l0  2.0 cdot 10-3), and in the magnetoresistance inpolycrystals of the paramagnetic heavy-fermion system CeTiGe at a criticalmagnetic field mu0 Hc<missing VAR> approx  12.5,T<missing VAR> at low temperatures.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 0.74, ',', 0],[6.0, 12.5, ',', 0]

CeRu2Si2
###Huge First-Order Metamagnetic Transition in the Paramagnetic Heavy-Fermion System CeTiGe|Micha Deppe,Stefan Lausberg,Franziska Weickert,Manuel Brando,Yurii Skourski,Nubia Caroca-Canales,Chistoph Geibel,Frank Steglich###
(989658, 989662)
 The size ofthese anomalies is much larger than those reported for the prototypicalheavy-fermion metamagnet CeRu2Si2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 0.74, ',', 1],[47.0, 12.5, ',', 1]

CeRu2Si2
###Huge First-Order Metamagnetic Transition in the Paramagnetic Heavy-Fermion System CeTiGe|Micha Deppe,Stefan Lausberg,Franziska Weickert,Manuel Brando,Yurii Skourski,Nubia Caroca-Canales,Chistoph Geibel,Frank Steglich###
(989721, 989725)
 Furthermore, hysteresis betweenincreasing and decreasing field data indicate a real thermodynamic, first-ordertype of phase transition, in contrast to the crossover reported forCeRu2Si2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[196.0, 0.74, ',', 2],[110.0, 12.5, ',', 2]

H
###Huge First-Order Metamagnetic Transition in the Paramagnetic Heavy-Fermion System CeTiGe|Micha Deppe,Stefan Lausberg,Franziska Weickert,Manuel Brando,Yurii Skourski,Nubia Caroca-Canales,Chistoph Geibel,Frank Steglich###
(989759, 989759)
 Analysis of the resistivity data shows a pronounced decrease ofthe electronic quasiparticle mass across Hc<missing VAR>.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[234.0, 0.74, ',', 3],[148.0, 12.5, ',', 3]

CeTiGe
###Huge First-Order Metamagnetic Transition in the Paramagnetic Heavy-Fermion System CeTiGe|Micha Deppe,Stefan Lausberg,Franziska Weickert,Manuel Brando,Yurii Skourski,Nubia Caroca-Canales,Chistoph Geibel,Frank Steglich###
(989769, 989771)
 These results establish CeTiGeas a new metamagnetic Kondo-lattice system, with an exceptionally large,metamagnetic transition of first-order type at a moderate field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[244.0, 0.74, ',', 4],[158.0, 12.5, ',', 4]

Ni
###Magnetoresistance and negative differential resistance in Ni/Graphene/Ni vertical heterostructures driven by finite bias voltage: A first-principles study|Kamal K. Saha,Anders Blom,Kristian S. Thygesen,Branislav K. Nikolic###
(989840, 989840)
Magnetoresistance and negative differential resistance in Ni/Graphene/Ni vertical heterostructures driven by finite bias voltage A first-principles study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 100, '%', 2],[152.0, 0, ',', 2]

Ni
###Magnetoresistance and negative differential resistance in Ni/Graphene/Ni vertical heterostructures driven by finite bias voltage: A first-principles study|Kamal K. Saha,Anders Blom,Kristian S. Thygesen,Branislav K. Nikolic###
(989844, 989844)
Magnetoresistance and negative differential resistance in Ni/Graphene/Ni vertical heterostructures driven by finite bias voltage A first-principles study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 100, '%', 2],[148.0, 0, ',', 2]

Ni
###Magnetoresistance and negative differential resistance in Ni/Graphene/Ni vertical heterostructures driven by finite bias voltage: A first-principles study|Kamal K. Saha,Anders Blom,Kristian S. Thygesen,Branislav K. Nikolic###
(989907, 989907)
 Using the nonequilibrium Green function formalism combined with densityfunctional theory, we study finite-bias quantum transport in Ni/Grn<missing VAR>/Nivertical heterostructures where n<missing VAR> graphene layers are sandwiched between twosemi-infinite Ni(111) electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 100, '%', 1],[85.0, 0, ',', 1]

Ni
###Magnetoresistance and negative differential resistance in Ni/Graphene/Ni vertical heterostructures driven by finite bias voltage: A first-principles study|Kamal K. Saha,Anders Blom,Kristian S. Thygesen,Branislav K. Nikolic###
(989912, 989912)
 Using the nonequilibrium Green function formalism combined with densityfunctional theory, we study finite-bias quantum transport in Ni/Grn<missing VAR>/Nivertical heterostructures where n<missing VAR> graphene layers are sandwiched between twosemi-infinite Ni(111) electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 100, '%', 1],[80.0, 0, ',', 1]

V
###Magnetoresistance and negative differential resistance in Ni/Graphene/Ni vertical heterostructures driven by finite bias voltage: A first-principles study|Kamal K. Saha,Anders Blom,Kristian S. Thygesen,Branislav K. Nikolic###
(989986, 989986)
 We find that recently predicted pessimisticmagnetoresistance of 100% for n<missing VAR> ge 5 junctions at zero bias voltage Vb<missing VAR>rightarrow 0, persists up to Vb<missing VAR> simeq 0.4 V, which makes such devicespromising for spin-torque-based device applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 100, '%', 0],[6.0, 0, ',', 0]

V
###Magnetoresistance and negative differential resistance in Ni/Graphene/Ni vertical heterostructures driven by finite bias voltage: A first-principles study|Kamal K. Saha,Anders Blom,Kristian S. Thygesen,Branislav K. Nikolic###
(990001, 990001)
 We find that recently predicted pessimisticmagnetoresistance of 100% for n<missing VAR> ge 5 junctions at zero bias voltage Vb<missing VAR>rightarrow 0, persists up to Vb<missing VAR> simeq 0.4 V, which makes such devicespromising for spin-torque-based device applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 100, '%', 0],[9.0, 0, ',', 0]

V
###Magnetoresistance and negative differential resistance in Ni/Graphene/Ni vertical heterostructures driven by finite bias voltage: A first-principles study|Kamal K. Saha,Anders Blom,Kristian S. Thygesen,Branislav K. Nikolic###
(990008, 990008)
 We find that recently predicted pessimisticmagnetoresistance of 100% for n<missing VAR> ge 5 junctions at zero bias voltage Vb<missing VAR>rightarrow 0, persists up to Vb<missing VAR> simeq 0.4 V, which makes such devicespromising for spin-torque-based device applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 100, '%', 0],[16.0, 0, ',', 0]

In
###Magnetoresistance and negative differential resistance in Ni/Graphene/Ni vertical heterostructures driven by finite bias voltage: A first-principles study|Kamal K. Saha,Anders Blom,Kristian S. Thygesen,Branislav K. Nikolic###
(990035, 990035)
 In addition, for parallelorientations of the Ni magnetizations, the n<missing VAR>5 junction exhibits a pronouncednegative differential resistance as the bias voltage is increased from Vb<missing VAR>0V to Vb<missing VAR> simeq 0.5 V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 100, '%', 1],[43.0, 0, ',', 1]

Ni
###Magnetoresistance and negative differential resistance in Ni/Graphene/Ni vertical heterostructures driven by finite bias voltage: A first-principles study|Kamal K. Saha,Anders Blom,Kristian S. Thygesen,Branislav K. Nikolic###
(990051, 990051)
 In addition, for parallelorientations of the Ni magnetizations, the n<missing VAR>5 junction exhibits a pronouncednegative differential resistance as the bias voltage is increased from Vb<missing VAR>0V to Vb<missing VAR> simeq 0.5 V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 100, '%', 1],[59.0, 0, ',', 1]

V
###Magnetoresistance and negative differential resistance in Ni/Graphene/Ni vertical heterostructures driven by finite bias voltage: A first-principles study|Kamal K. Saha,Anders Blom,Kristian S. Thygesen,Branislav K. Nikolic###
(990090, 990090)
 In addition, for parallelorientations of the Ni magnetizations, the n<missing VAR>5 junction exhibits a pronouncednegative differential resistance as the bias voltage is increased from Vb<missing VAR>0V to Vb<missing VAR> simeq 0.5 V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 100, '%', 1],[98.0, 0, ',', 1]

V
###Magnetoresistance and negative differential resistance in Ni/Graphene/Ni vertical heterostructures driven by finite bias voltage: A first-principles study|Kamal K. Saha,Anders Blom,Kristian S. Thygesen,Branislav K. Nikolic###
(990095, 990095)
 In addition, for parallelorientations of the Ni magnetizations, the n<missing VAR>5 junction exhibits a pronouncednegative differential resistance as the bias voltage is increased from Vb<missing VAR>0V to Vb<missing VAR> simeq 0.5 V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 100, '%', 1],[103.0, 0, ',', 1]

V
###Magnetoresistance and negative differential resistance in Ni/Graphene/Ni vertical heterostructures driven by finite bias voltage: A first-principles study|Kamal K. Saha,Anders Blom,Kristian S. Thygesen,Branislav K. Nikolic###
(990099, 990099)
 In addition, for parallelorientations of the Ni magnetizations, the n<missing VAR>5 junction exhibits a pronouncednegative differential resistance as the bias voltage is increased from Vb<missing VAR>0V to Vb<missing VAR> simeq 0.5 V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 100, '%', 1],[107.0, 0, ',', 1]

V
###Magnetoresistance and negative differential resistance in Ni/Graphene/Ni vertical heterostructures driven by finite bias voltage: A first-principles study|Kamal K. Saha,Anders Blom,Kristian S. Thygesen,Branislav K. Nikolic###
(990106, 990106)
 In addition, for parallelorientations of the Ni magnetizations, the n<missing VAR>5 junction exhibits a pronouncednegative differential resistance as the bias voltage is increased from Vb<missing VAR>0V to Vb<missing VAR> simeq 0.5 V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 100, '%', 1],[114.0, 0, ',', 1]

Co
###Observation of Huge Magnetoresistance and Multiferroic-like Behavior of Co Nanoparticles in a C60 matrix|Yutaka Sakai,Eiiti Tamura,Shuhei Toyokawa,Eiji Shikoh,Vlado K. Lazarov,Atsufumi Hirohata,Teruya Shinjo,Yoshishige Suzuki,Masashi Shiraishi###
(990197, 990197)
Observation of Huge Magnetoresistance and Multiferroic-like Behavior of Co Nanoparticles in a C60 matrix.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 1, ',', 3],[160.0, 400, ',', 3],[162.0, 0, '%', 3]

C60
###Observation of Huge Magnetoresistance and Multiferroic-like Behavior of Co Nanoparticles in a C60 matrix|Yutaka Sakai,Eiiti Tamura,Shuhei Toyokawa,Eiji Shikoh,Vlado K. Lazarov,Atsufumi Hirohata,Teruya Shinjo,Yoshishige Suzuki,Masashi Shiraishi###
(990205, 990206)
Observation of Huge Magnetoresistance and Multiferroic-like Behavior of Co Nanoparticles in a C60 matrix.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 1, ',', 3],[151.0, 400, ',', 3],[153.0, 0, '%', 3]

C60
###Observation of Huge Magnetoresistance and Multiferroic-like Behavior of Co Nanoparticles in a C60 matrix|Yutaka Sakai,Eiiti Tamura,Shuhei Toyokawa,Eiji Shikoh,Vlado K. Lazarov,Atsufumi Hirohata,Teruya Shinjo,Yoshishige Suzuki,Masashi Shiraishi###
(990366, 990367)
 Here we report a discovery of agigantic TMR ratio of 1,400,000% in a C60-Co nanocomposite spin device.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 1, ',', 0],[9.0, 400, ',', 0],[7.0, 0, '%', 0]

Co
###Observation of Huge Magnetoresistance and Multiferroic-like Behavior of Co Nanoparticles in a C60 matrix|Yutaka Sakai,Eiiti Tamura,Shuhei Toyokawa,Eiji Shikoh,Vlado K. Lazarov,Atsufumi Hirohata,Teruya Shinjo,Yoshishige Suzuki,Masashi Shiraishi###
(990369, 990369)
 Here we report a discovery of agigantic TMR ratio of 1,400,000% in a C60-Co nanocomposite spin device.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 1, ',', 0],[12.0, 400, ',', 0],[10.0, 0, '%', 0]

Co
###Observation of Huge Magnetoresistance and Multiferroic-like Behavior of Co Nanoparticles in a C60 matrix|Yutaka Sakai,Eiiti Tamura,Shuhei Toyokawa,Eiji Shikoh,Vlado K. Lazarov,Atsufumi Hirohata,Teruya Shinjo,Yoshishige Suzuki,Masashi Shiraishi###
(990467, 990467)
 Theoretical investigation reveals that anelectric field and a magnetic field control the magnetization and theelectronic charging state, respectively, of the Co nanoparticles as in physicsof multiferroicity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 1, ',', 2],[110.0, 400, ',', 2],[108.0, 0, '%', 2]

BaTiO3
###Coexistance of giant tunneling electroresistance and magnetoresistance in an all-oxide magnetic tunnel junction|Nuala Mai Caffrey,Thomas Archer,Ivan Rungger,Stefano Sanvito###
(990610, 990613)
 The TMR originates from thesymmetry-driven spin filtering provided by the insulating BaTiO3 barrier to theelectrons injected from SrRuO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrRuO3
###Coexistance of giant tunneling electroresistance and magnetoresistance in an all-oxide magnetic tunnel junction|Nuala Mai Caffrey,Thomas Archer,Ivan Rungger,Stefano Sanvito###
(990628, 990631)
 The TMR originates from thesymmetry-driven spin filtering provided by the insulating BaTiO3 barrier to theelectrons injected from SrRuO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Coexistance of giant tunneling electroresistance and magnetoresistance in an all-oxide magnetic tunnel junction|Nuala Mai Caffrey,Thomas Archer,Ivan Rungger,Stefano Sanvito###
(990634, 990634)
 In contrast the TER is possible only when athin SrTiO3 layer is intercalated at one of the SrRuO3/BaTiO3 interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Coexistance of giant tunneling electroresistance and magnetoresistance in an all-oxide magnetic tunnel junction|Nuala Mai Caffrey,Thomas Archer,Ivan Rungger,Stefano Sanvito###
(990657, 990660)
 In contrast the TER is possible only when athin SrTiO3 layer is intercalated at one of the SrRuO3/BaTiO3 interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrRuO3/BaTiO3
###Coexistance of giant tunneling electroresistance and magnetoresistance in an all-oxide magnetic tunnel junction|Nuala Mai Caffrey,Thomas Archer,Ivan Rungger,Stefano Sanvito###
(990676, 990684)
 In contrast the TER is possible only when athin SrTiO3 layer is intercalated at one of the SrRuO3/BaTiO3 interfaces.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

As
###Coexistance of giant tunneling electroresistance and magnetoresistance in an all-oxide magnetic tunnel junction|Nuala Mai Caffrey,Thomas Archer,Ivan Rungger,Stefano Sanvito###
(990689, 990689)
 Asthe complex band-structure of SrTiO3 has the same symmetry than that of BaTiO3,the inclusion of such an intercalated layer does not negatively alter the TMRand in fact increases it.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Coexistance of giant tunneling electroresistance and magnetoresistance in an all-oxide magnetic tunnel junction|Nuala Mai Caffrey,Thomas Archer,Ivan Rungger,Stefano Sanvito###
(990702, 990705)
 Asthe complex band-structure of SrTiO3 has the same symmetry than that of BaTiO3,the inclusion of such an intercalated layer does not negatively alter the TMRand in fact increases it.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BaTiO3
###Coexistance of giant tunneling electroresistance and magnetoresistance in an all-oxide magnetic tunnel junction|Nuala Mai Caffrey,Thomas Archer,Ivan Rungger,Stefano Sanvito###
(990721, 990724)
 Asthe complex band-structure of SrTiO3 has the same symmetry than that of BaTiO3,the inclusion of such an intercalated layer does not negatively alter the TMRand in fact increases it.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Coexistance of giant tunneling electroresistance and magnetoresistance in an all-oxide magnetic tunnel junction|Nuala Mai Caffrey,Thomas Archer,Ivan Rungger,Stefano Sanvito###
(990798, 990801)
 Crucially, the magnitude of the TER also scales withthe thickness of the SrTiO3 layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Coexistance of giant tunneling electroresistance and magnetoresistance in an all-oxide magnetic tunnel junction|Nuala Mai Caffrey,Thomas Archer,Ivan Rungger,Stefano Sanvito###
(990808, 990811)
 The SrTiO3 thickness becomes then a singlecontrol parameter for both the TMR and the TER effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

KKY
###Analogy of RKKY oscillations to the heat exchange in cold atoms|Ching-Hao Chang,Tzay-Ming Hong###
(991186, 991188)
Analogy of R<missing VAR>KKY oscillations to the heat exchange in cold atoms.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Crystalline anisotropic magnetoresistance with two-fold and eight-fold symmetry in (In,Fe)As ferromagnetic semiconductor|Pham Nam Hai,Daisuke Sasaki,Le Duc Anh,Masaaki Tanaka###
(991498, 991498)
Crystalline anisotropic magnetoresistance with two-fold and eight-fold symmetry in (In,Fe)As ferromagnetic semiconductor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 10, 'nm', 2],[127.0, 100, 'nm', 3],[229.0, 100, 'nm', 5],[252.0, -5, ',', 5]

Fe
###Crystalline anisotropic magnetoresistance with two-fold and eight-fold symmetry in (In,Fe)As ferromagnetic semiconductor|Pham Nam Hai,Daisuke Sasaki,Le Duc Anh,Masaaki Tanaka###
(991500, 991500)
Crystalline anisotropic magnetoresistance with two-fold and eight-fold symmetry in (In,Fe)As ferromagnetic semiconductor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 10, 'nm', 2],[125.0, 100, 'nm', 3],[227.0, 100, 'nm', 5],[250.0, -5, ',', 5]

As
###Crystalline anisotropic magnetoresistance with two-fold and eight-fold symmetry in (In,Fe)As ferromagnetic semiconductor|Pham Nam Hai,Daisuke Sasaki,Le Duc Anh,Masaaki Tanaka###
(991502, 991502)
Crystalline anisotropic magnetoresistance with two-fold and eight-fold symmetry in (In,Fe)As ferromagnetic semiconductor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 10, 'nm', 2],[123.0, 100, 'nm', 3],[225.0, 100, 'nm', 5],[248.0, -5, ',', 5]

In
###Crystalline anisotropic magnetoresistance with two-fold and eight-fold symmetry in (In,Fe)As ferromagnetic semiconductor|Pham Nam Hai,Daisuke Sasaki,Le Duc Anh,Masaaki Tanaka###
(991530, 991530)
 We have investigated the anisotropic magnetoresistance (AMR) of (In,Fe)Asferromagnetic semiconductor (FM<missing VAR>S) layers grown on semi-insulating GaAssubstrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 10, 'nm', 1],[95.0, 100, 'nm', 2],[197.0, 100, 'nm', 4],[220.0, -5, ',', 4]

Fe
###Crystalline anisotropic magnetoresistance with two-fold and eight-fold symmetry in (In,Fe)As ferromagnetic semiconductor|Pham Nam Hai,Daisuke Sasaki,Le Duc Anh,Masaaki Tanaka###
(991532, 991532)
 We have investigated the anisotropic magnetoresistance (AMR) of (In,Fe)Asferromagnetic semiconductor (FM<missing VAR>S) layers grown on semi-insulating GaAssubstrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 10, 'nm', 1],[93.0, 100, 'nm', 2],[195.0, 100, 'nm', 4],[218.0, -5, ',', 4]

As
###Crystalline anisotropic magnetoresistance with two-fold and eight-fold symmetry in (In,Fe)As ferromagnetic semiconductor|Pham Nam Hai,Daisuke Sasaki,Le Duc Anh,Masaaki Tanaka###
(991534, 991534)
 We have investigated the anisotropic magnetoresistance (AMR) of (In,Fe)Asferromagnetic semiconductor (FM<missing VAR>S) layers grown on semi-insulating GaAssubstrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 10, 'nm', 1],[91.0, 100, 'nm', 2],[193.0, 100, 'nm', 4],[216.0, -5, ',', 4]

F
###Crystalline anisotropic magnetoresistance with two-fold and eight-fold symmetry in (In,Fe)As ferromagnetic semiconductor|Pham Nam Hai,Daisuke Sasaki,Le Duc Anh,Masaaki Tanaka###
(991542, 991542)
 We have investigated the anisotropic magnetoresistance (AMR) of (In,Fe)Asferromagnetic semiconductor (FM<missing VAR>S) layers grown on semi-insulating GaAssubstrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 10, 'nm', 1],[83.0, 100, 'nm', 2],[185.0, 100, 'nm', 4],[208.0, -5, ',', 4]

S
###Crystalline anisotropic magnetoresistance with two-fold and eight-fold symmetry in (In,Fe)As ferromagnetic semiconductor|Pham Nam Hai,Daisuke Sasaki,Le Duc Anh,Masaaki Tanaka###
(991544, 991544)
 We have investigated the anisotropic magnetoresistance (AMR) of (In,Fe)Asferromagnetic semiconductor (FM<missing VAR>S) layers grown on semi-insulating GaAssubstrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 10, 'nm', 1],[81.0, 100, 'nm', 2],[183.0, 100, 'nm', 4],[206.0, -5, ',', 4]

GaAs
###Crystalline anisotropic magnetoresistance with two-fold and eight-fold symmetry in (In,Fe)As ferromagnetic semiconductor|Pham Nam Hai,Daisuke Sasaki,Le Duc Anh,Masaaki Tanaka###
(991557, 991558)
 We have investigated the anisotropic magnetoresistance (AMR) of (In,Fe)Asferromagnetic semiconductor (FM<missing VAR>S) layers grown on semi-insulating GaAssubstrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 10, 'nm', 1],[67.0, 100, 'nm', 2],[169.0, 100, 'nm', 4],[192.0, -5, ',', 4]

In
###Crystalline anisotropic magnetoresistance with two-fold and eight-fold symmetry in (In,Fe)As ferromagnetic semiconductor|Pham Nam Hai,Daisuke Sasaki,Le Duc Anh,Masaaki Tanaka###
(991564, 991564)
 In a 10 nm-thick (In,Fe)As layer which is insulating at lowtemperature, we observed crystalline AMR with two-fold and eight-foldsymmetries.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 10, 'nm', 0],[61.0, 100, 'nm', 1],[163.0, 100, 'nm', 3],[186.0, -5, ',', 3]

In
###Crystalline anisotropic magnetoresistance with two-fold and eight-fold symmetry in (In,Fe)As ferromagnetic semiconductor|Pham Nam Hai,Daisuke Sasaki,Le Duc Anh,Masaaki Tanaka###
(991572, 991572)
 In a 10 nm-thick (In,Fe)As layer which is insulating at lowtemperature, we observed crystalline AMR with two-fold and eight-foldsymmetries.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 10, 'nm', 0],[53.0, 100, 'nm', 1],[155.0, 100, 'nm', 3],[178.0, -5, ',', 3]

Fe
###Crystalline anisotropic magnetoresistance with two-fold and eight-fold symmetry in (In,Fe)As ferromagnetic semiconductor|Pham Nam Hai,Daisuke Sasaki,Le Duc Anh,Masaaki Tanaka###
(991574, 991574)
 In a 10 nm-thick (In,Fe)As layer which is insulating at lowtemperature, we observed crystalline AMR with two-fold and eight-foldsymmetries.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 10, 'nm', 0],[51.0, 100, 'nm', 1],[153.0, 100, 'nm', 3],[176.0, -5, ',', 3]

As
###Crystalline anisotropic magnetoresistance with two-fold and eight-fold symmetry in (In,Fe)As ferromagnetic semiconductor|Pham Nam Hai,Daisuke Sasaki,Le Duc Anh,Masaaki Tanaka###
(991576, 991576)
 In a 10 nm-thick (In,Fe)As layer which is insulating at lowtemperature, we observed crystalline AMR with two-fold and eight-foldsymmetries.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 10, 'nm', 0],[49.0, 100, 'nm', 1],[151.0, 100, 'nm', 3],[174.0, -5, ',', 3]

In
###Crystalline anisotropic magnetoresistance with two-fold and eight-fold symmetry in (In,Fe)As ferromagnetic semiconductor|Pham Nam Hai,Daisuke Sasaki,Le Duc Anh,Masaaki Tanaka###
(991620, 991620)
 In a metallic 100 nm-thick (In,Fe)As layer with higher electronconcentration, only two-fold symmetric crystalline AMR was observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 10, 'nm', 1],[5.0, 100, 'nm', 0],[107.0, 100, 'nm', 2],[130.0, -5, ',', 2]

In
###Crystalline anisotropic magnetoresistance with two-fold and eight-fold symmetry in (In,Fe)As ferromagnetic semiconductor|Pham Nam Hai,Daisuke Sasaki,Le Duc Anh,Masaaki Tanaka###
(991630, 991630)
 In a metallic 100 nm-thick (In,Fe)As layer with higher electronconcentration, only two-fold symmetric crystalline AMR was observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 10, 'nm', 1],[5.0, 100, 'nm', 0],[97.0, 100, 'nm', 2],[120.0, -5, ',', 2]

Fe
###Crystalline anisotropic magnetoresistance with two-fold and eight-fold symmetry in (In,Fe)As ferromagnetic semiconductor|Pham Nam Hai,Daisuke Sasaki,Le Duc Anh,Masaaki Tanaka###
(991632, 991632)
 In a metallic 100 nm-thick (In,Fe)As layer with higher electronconcentration, only two-fold symmetric crystalline AMR was observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 10, 'nm', 1],[7.0, 100, 'nm', 0],[95.0, 100, 'nm', 2],[118.0, -5, ',', 2]

As
###Crystalline anisotropic magnetoresistance with two-fold and eight-fold symmetry in (In,Fe)As ferromagnetic semiconductor|Pham Nam Hai,Daisuke Sasaki,Le Duc Anh,Masaaki Tanaka###
(991634, 991634)
 In a metallic 100 nm-thick (In,Fe)As layer with higher electronconcentration, only two-fold symmetric crystalline AMR was observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 10, 'nm', 1],[9.0, 100, 'nm', 0],[93.0, 100, 'nm', 2],[116.0, -5, ',', 2]

In
###Crystalline anisotropic magnetoresistance with two-fold and eight-fold symmetry in (In,Fe)As ferromagnetic semiconductor|Pham Nam Hai,Daisuke Sasaki,Le Duc Anh,Masaaki Tanaka###
(991683, 991683)
 Ourresults demonstrate the macroscopic ferromagnetism in (In,Fe)As with magneticanisotropy that depends on the electron concentration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 10, 'nm', 2],[58.0, 100, 'nm', 1],[44.0, 100, 'nm', 1],[67.0, -5, ',', 1]

Fe
###Crystalline anisotropic magnetoresistance with two-fold and eight-fold symmetry in (In,Fe)As ferromagnetic semiconductor|Pham Nam Hai,Daisuke Sasaki,Le Duc Anh,Masaaki Tanaka###
(991685, 991685)
 Ourresults demonstrate the macroscopic ferromagnetism in (In,Fe)As with magneticanisotropy that depends on the electron concentration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 10, 'nm', 2],[60.0, 100, 'nm', 1],[42.0, 100, 'nm', 1],[65.0, -5, ',', 1]

As
###Crystalline anisotropic magnetoresistance with two-fold and eight-fold symmetry in (In,Fe)As ferromagnetic semiconductor|Pham Nam Hai,Daisuke Sasaki,Le Duc Anh,Masaaki Tanaka###
(991687, 991687)
 Ourresults demonstrate the macroscopic ferromagnetism in (In,Fe)As with magneticanisotropy that depends on the electron concentration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 10, 'nm', 2],[62.0, 100, 'nm', 1],[40.0, 100, 'nm', 1],[63.0, -5, ',', 1]

In
###Crystalline anisotropic magnetoresistance with two-fold and eight-fold symmetry in (In,Fe)As ferromagnetic semiconductor|Pham Nam Hai,Daisuke Sasaki,Le Duc Anh,Masaaki Tanaka###
(991782, 991782)
 Non-crystalline AMR isalso observed in the 100 nm-thick layer, but its magnitude is as small as10-5, suggesting that there is no s-d scattering near the Fermi level of(In,Fe)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[215.0, 10, 'nm', 3],[157.0, 100, 'nm', 2],[55.0, 100, 'nm', 0],[32.0, -5, ',', 0]

Fe
###Crystalline anisotropic magnetoresistance with two-fold and eight-fold symmetry in (In,Fe)As ferromagnetic semiconductor|Pham Nam Hai,Daisuke Sasaki,Le Duc Anh,Masaaki Tanaka###
(991784, 991784)
 Non-crystalline AMR isalso observed in the 100 nm-thick layer, but its magnitude is as small as10-5, suggesting that there is no s-d scattering near the Fermi level of(In,Fe)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[217.0, 10, 'nm', 3],[159.0, 100, 'nm', 2],[57.0, 100, 'nm', 0],[34.0, -5, ',', 0]

As
###Crystalline anisotropic magnetoresistance with two-fold and eight-fold symmetry in (In,Fe)As ferromagnetic semiconductor|Pham Nam Hai,Daisuke Sasaki,Le Duc Anh,Masaaki Tanaka###
(991786, 991786)
 Non-crystalline AMR isalso observed in the 100 nm-thick layer, but its magnitude is as small as10-5, suggesting that there is no s-d scattering near the Fermi level of(In,Fe)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[219.0, 10, 'nm', 3],[161.0, 100, 'nm', 2],[59.0, 100, 'nm', 0],[36.0, -5, ',', 0]

In
###Crystalline anisotropic magnetoresistance with two-fold and eight-fold symmetry in (In,Fe)As ferromagnetic semiconductor|Pham Nam Hai,Daisuke Sasaki,Le Duc Anh,Masaaki Tanaka###
(991815, 991815)
 We propose the origin of the eight-fold symmetric crystallineanisotropy in (In,Fe)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[248.0, 10, 'nm', 4],[190.0, 100, 'nm', 3],[88.0, 100, 'nm', 1],[65.0, -5, ',', 1]

Fe
###Crystalline anisotropic magnetoresistance with two-fold and eight-fold symmetry in (In,Fe)As ferromagnetic semiconductor|Pham Nam Hai,Daisuke Sasaki,Le Duc Anh,Masaaki Tanaka###
(991817, 991817)
 We propose the origin of the eight-fold symmetric crystallineanisotropy in (In,Fe)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[250.0, 10, 'nm', 4],[192.0, 100, 'nm', 3],[90.0, 100, 'nm', 1],[67.0, -5, ',', 1]

As
###Crystalline anisotropic magnetoresistance with two-fold and eight-fold symmetry in (In,Fe)As ferromagnetic semiconductor|Pham Nam Hai,Daisuke Sasaki,Le Duc Anh,Masaaki Tanaka###
(991819, 991819)
 We propose the origin of the eight-fold symmetric crystallineanisotropy in (In,Fe)As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[252.0, 10, 'nm', 4],[194.0, 100, 'nm', 3],[92.0, 100, 'nm', 1],[69.0, -5, ',', 1]

(Bi2)
###Phase Stability, Structures and Properties of the (Bi2)m(Bi2Te3)n Natural Superlattices|J. -W. G. Bos,F. Faucheux,R. A. Downie,A. Marcinkova###
(991845, 991848)
Phase Stability, Structures and Properties of the (Bi2)m<missing VAR>(Bi2Te3)n<missing VAR> Natural Superlattices.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 0.7, ',', 2],[166.0, 0.7, ',', 3],[239.0, 2, ',', 4],[338.0, 1.05, 'in', 5],[339.0, 9, 'T', 5],[368.0, 0.63, ',', 6],[392.0, 0.2, 'at', 6],[393.0, 250, 'K', 6]

(Bi2Te3)
###Phase Stability, Structures and Properties of the (Bi2)m(Bi2Te3)n Natural Superlattices|J. -W. G. Bos,F. Faucheux,R. A. Downie,A. Marcinkova###
(991850, 991855)
Phase Stability, Structures and Properties of the (Bi2)m<missing VAR>(Bi2Te3)n<missing VAR> Natural Superlattices.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 0.7, ',', 2],[159.0, 0.7, ',', 3],[232.0, 2, ',', 4],[331.0, 1.05, 'in', 5],[332.0, 9, 'T', 5],[361.0, 0.63, ',', 6],[385.0, 0.2, 'at', 6],[386.0, 250, 'K', 6]

(Bi2)
###Phase Stability, Structures and Properties of the (Bi2)m(Bi2Te3)n Natural Superlattices|J. -W. G. Bos,F. Faucheux,R. A. Downie,A. Marcinkova###
(991873, 991876)
 The phase stability of the (Bi2)m<missing VAR>(Bi2Te3)n<missing VAR> natural superlattices has beeninvestigated through the low temperature solid state synthesis of a number ofnew binary BixTe1-x compositions.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 0.7, ',', 1],[138.0, 0.7, ',', 2],[211.0, 2, ',', 3],[310.0, 1.05, 'in', 4],[311.0, 9, 'T', 4],[340.0, 0.63, ',', 5],[364.0, 0.2, 'at', 5],[365.0, 250, 'K', 5]

(Bi2Te3)
###Phase Stability, Structures and Properties of the (Bi2)m(Bi2Te3)n Natural Superlattices|J. -W. G. Bos,F. Faucheux,R. A. Downie,A. Marcinkova###
(991878, 991883)
 The phase stability of the (Bi2)m<missing VAR>(Bi2Te3)n<missing VAR> natural superlattices has beeninvestigated through the low temperature solid state synthesis of a number ofnew binary BixTe1-x compositions.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 0.7, ',', 1],[131.0, 0.7, ',', 2],[204.0, 2, ',', 3],[303.0, 1.05, 'in', 4],[304.0, 9, 'T', 4],[333.0, 0.63, ',', 5],[357.0, 0.2, 'at', 5],[358.0, 250, 'K', 5]

Te1-x
###Phase Stability, Structures and Properties of the (Bi2)m(Bi2Te3)n Natural Superlattices|J. -W. G. Bos,F. Faucheux,R. A. Downie,A. Marcinkova###
(991925, 991928)
 The phase stability of the (Bi2)m<missing VAR>(Bi2Te3)n<missing VAR> natural superlattices has beeninvestigated through the low temperature solid state synthesis of a number ofnew binary BixTe1-x compositions.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[38.0, 0.7, ',', 1],[86.0, 0.7, ',', 2],[159.0, 2, ',', 3],[258.0, 1.05, 'in', 4],[259.0, 9, 'T', 4],[288.0, 0.63, ',', 5],[312.0, 0.2, 'at', 5],[313.0, 250, 'K', 5]

Bi
###Phase Stability, Structures and Properties of the (Bi2)m(Bi2Te3)n Natural Superlattices|J. -W. G. Bos,F. Faucheux,R. A. Downie,A. Marcinkova###
(992023, 992023)
For x<missing VAR> > 0.70, mixtures of elemental Bi and an almost constant composition(Bi2)m<missing VAR>(Bi2Te3)n<missing VAR> phase are observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 0.7, ',', 1],[9.0, 0.7, ',', 0],[64.0, 2, ',', 1],[163.0, 1.05, 'in', 2],[164.0, 9, 'T', 2],[193.0, 0.63, ',', 3],[217.0, 0.2, 'at', 3],[218.0, 250, 'K', 3]

(Bi2)
###Phase Stability, Structures and Properties of the (Bi2)m(Bi2Te3)n Natural Superlattices|J. -W. G. Bos,F. Faucheux,R. A. Downie,A. Marcinkova###
(992036, 992039)
For x<missing VAR> > 0.70, mixtures of elemental Bi and an almost constant composition(Bi2)m<missing VAR>(Bi2Te3)n<missing VAR> phase are observed.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 0.7, ',', 1],[22.0, 0.7, ',', 0],[48.0, 2, ',', 1],[147.0, 1.05, 'in', 2],[148.0, 9, 'T', 2],[177.0, 0.63, ',', 3],[201.0, 0.2, 'at', 3],[202.0, 250, 'K', 3]

(Bi2Te3)
###Phase Stability, Structures and Properties of the (Bi2)m(Bi2Te3)n Natural Superlattices|J. -W. G. Bos,F. Faucheux,R. A. Downie,A. Marcinkova###
(992041, 992046)
For x<missing VAR> > 0.70, mixtures of elemental Bi and an almost constant composition(Bi2)m<missing VAR>(Bi2Te3)n<missing VAR> phase are observed.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 0.7, ',', 1],[27.0, 0.7, ',', 0],[41.0, 2, ',', 1],[140.0, 1.05, 'in', 2],[141.0, 9, 'T', 2],[170.0, 0.63, ',', 3],[194.0, 0.2, 'at', 3],[195.0, 250, 'K', 3]

Bi2Te
###Phase Stability, Structures and Properties of the (Bi2)m(Bi2Te3)n Natural Superlattices|J. -W. G. Bos,F. Faucheux,R. A. Downie,A. Marcinkova###
(992079, 992081)
 Rietveld analysis of synchrotron X<missing VAR>-raypowder diffraction data collected on Bi2Te (m<missing VAR>  2, n<missing VAR>  1) revealed substantialinterchange of Bi and Te between the Bi2 and Bi2Te3 blocks, demonstrating thatthe block compositions are variable.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 0.7, ',', 2],[65.0, 0.7, ',', 1],[6.0, 2, ',', 0],[105.0, 1.05, 'in', 1],[106.0, 9, 'T', 1],[135.0, 0.63, ',', 2],[159.0, 0.2, 'at', 2],[160.0, 250, 'K', 2]

Bi
###Phase Stability, Structures and Properties of the (Bi2)m(Bi2Te3)n Natural Superlattices|J. -W. G. Bos,F. Faucheux,R. A. Downie,A. Marcinkova###
(992105, 992105)
 Rietveld analysis of synchrotron X<missing VAR>-raypowder diffraction data collected on Bi2Te (m<missing VAR>  2, n<missing VAR>  1) revealed substantialinterchange of Bi and Te between the Bi2 and Bi2Te3 blocks, demonstrating thatthe block compositions are variable.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 0.7, ',', 2],[91.0, 0.7, ',', 1],[18.0, 2, ',', 0],[81.0, 1.05, 'in', 1],[82.0, 9, 'T', 1],[111.0, 0.63, ',', 2],[135.0, 0.2, 'at', 2],[136.0, 250, 'K', 2]

Te
###Phase Stability, Structures and Properties of the (Bi2)m(Bi2Te3)n Natural Superlattices|J. -W. G. Bos,F. Faucheux,R. A. Downie,A. Marcinkova###
(992109, 992109)
 Rietveld analysis of synchrotron X<missing VAR>-raypowder diffraction data collected on Bi2Te (m<missing VAR>  2, n<missing VAR>  1) revealed substantialinterchange of Bi and Te between the Bi2 and Bi2Te3 blocks, demonstrating thatthe block compositions are variable.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 0.7, ',', 2],[95.0, 0.7, ',', 1],[22.0, 2, ',', 0],[77.0, 1.05, 'in', 1],[78.0, 9, 'T', 1],[107.0, 0.63, ',', 2],[131.0, 0.2, 'at', 2],[132.0, 250, 'K', 2]

Bi2
###Phase Stability, Structures and Properties of the (Bi2)m(Bi2Te3)n Natural Superlattices|J. -W. G. Bos,F. Faucheux,R. A. Downie,A. Marcinkova###
(992115, 992116)
 Rietveld analysis of synchrotron X<missing VAR>-raypowder diffraction data collected on Bi2Te (m<missing VAR>  2, n<missing VAR>  1) revealed substantialinterchange of Bi and Te between the Bi2 and Bi2Te3 blocks, demonstrating thatthe block compositions are variable.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 0.7, ',', 2],[101.0, 0.7, ',', 1],[28.0, 2, ',', 0],[70.0, 1.05, 'in', 1],[71.0, 9, 'T', 1],[100.0, 0.63, ',', 2],[124.0, 0.2, 'at', 2],[125.0, 250, 'K', 2]

Bi2Te3
###Phase Stability, Structures and Properties of the (Bi2)m(Bi2Te3)n Natural Superlattices|J. -W. G. Bos,F. Faucheux,R. A. Downie,A. Marcinkova###
(992120, 992123)
 Rietveld analysis of synchrotron X<missing VAR>-raypowder diffraction data collected on Bi2Te (m<missing VAR>  2, n<missing VAR>  1) revealed substantialinterchange of Bi and Te between the Bi2 and Bi2Te3 blocks, demonstrating thatthe block compositions are variable.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 0.7, ',', 2],[106.0, 0.7, ',', 1],[33.0, 2, ',', 0],[63.0, 1.05, 'in', 1],[64.0, 9, 'T', 1],[93.0, 0.63, ',', 2],[117.0, 0.2, 'at', 2],[118.0, 250, 'K', 2]

V
###Phase Stability, Structures and Properties of the (Bi2)m(Bi2Te3)n Natural Superlattices|J. -W. G. Bos,F. Faucheux,R. A. Downie,A. Marcinkova###
(992205, 992205)
 The maximum Seebeckcoefficient is 80 muV K-1 for x<missing VAR>  0.63, leading to an estimated thermoelectricfigure of merit, zT  0.2 at 250 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[239.0, 0.7, ',', 4],[191.0, 0.7, ',', 3],[118.0, 2, ',', 2],[19.0, 1.05, 'in', 1],[18.0, 9, 'T', 1],[11.0, 0.63, ',', 0],[35.0, 0.2, 'at', 0],[36.0, 250, 'K', 0]

K
###Phase Stability, Structures and Properties of the (Bi2)m(Bi2Te3)n Natural Superlattices|J. -W. G. Bos,F. Faucheux,R. A. Downie,A. Marcinkova###
(992207, 992207)
 The maximum Seebeckcoefficient is 80 muV K-1 for x<missing VAR>  0.63, leading to an estimated thermoelectricfigure of merit, zT  0.2 at 250 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[241.0, 0.7, ',', 4],[193.0, 0.7, ',', 3],[120.0, 2, ',', 2],[21.0, 1.05, 'in', 1],[20.0, 9, 'T', 1],[9.0, 0.63, ',', 0],[33.0, 0.2, 'at', 0],[34.0, 250, 'K', 0]

P
###Electron transport in a ferromagnetic/normal/ferromagnetic tunnel junction based on the surface of a topological insulator|Jian-Hui Yuan,Yan Zhang,Jian-Jun Zhang,Ze Cheng###
(992351, 992351)
 The conductance at the parallel (textbfP)configuration can be much bigger than that at the antiparallel (textbfAP)configuration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Electron transport in a ferromagnetic/normal/ferromagnetic tunnel junction based on the surface of a topological insulator|Jian-Hui Yuan,Yan Zhang,Jian-Jun Zhang,Ze Cheng###
(992378, 992378)
 The conductance at the parallel (textbfP)configuration can be much bigger than that at the antiparallel (textbfAP)configuration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Electron transport in a ferromagnetic/normal/ferromagnetic tunnel junction based on the surface of a topological insulator|Jian-Hui Yuan,Yan Zhang,Jian-Jun Zhang,Ze Cheng###
(992388, 992388)
 Compared textbfP with textbfAP configuration, there existsa shift of phase which can be tuned by gate voltage.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Electron transport in a ferromagnetic/normal/ferromagnetic tunnel junction based on the surface of a topological insulator|Jian-Hui Yuan,Yan Zhang,Jian-Jun Zhang,Ze Cheng###
(992394, 992394)
 Compared textbfP with textbfAP configuration, there existsa shift of phase which can be tuned by gate voltage.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Electron transport in a ferromagnetic/normal/ferromagnetic tunnel junction based on the surface of a topological insulator|Jian-Hui Yuan,Yan Zhang,Jian-Jun Zhang,Ze Cheng###
(992455, 992455)
 We find that the exchangefield weakly affects the conductance of carriers for textbfP configurationbut can dramatically suppress the conductance of carriers for textbfAPconfiguration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Electron transport in a ferromagnetic/normal/ferromagnetic tunnel junction based on the surface of a topological insulator|Jian-Hui Yuan,Yan Zhang,Jian-Jun Zhang,Ze Cheng###
(992480, 992480)
 We find that the exchangefield weakly affects the conductance of carriers for textbfP configurationbut can dramatically suppress the conductance of carriers for textbfAPconfiguration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Electron transport in a ferromagnetic/normal/ferromagnetic tunnel junction based on the surface of a topological insulator|Jian-Hui Yuan,Yan Zhang,Jian-Jun Zhang,Ze Cheng###
(992531, 992531)
 In addition, we find that there is aFabry-Perot-like electron interference.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Carrier-controlled ferromagnetism in SrTiO3|Pouya Moetakef,James R. Williams,Daniel G. Ouellette,Adam Kajdos,David Goldhaber-Gordon,S. James Allen,Susanne Stemmer###
(992576, 992579)
Carrier-controlled ferromagnetism in SrTiO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La
###Carrier-controlled ferromagnetism in SrTiO3|Pouya Moetakef,James R. Williams,Daniel G. Ouellette,Adam Kajdos,David Goldhaber-Gordon,S. James Allen,Susanne Stemmer###
(992599, 992599)
 Magnetotransport and superconducting properties are investigated foruniformly La-doped SrTiO3 films and GdTiO3/SrTiO3 heterostructures,respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Carrier-controlled ferromagnetism in SrTiO3|Pouya Moetakef,James R. Williams,Daniel G. Ouellette,Adam Kajdos,David Goldhaber-Gordon,S. James Allen,Susanne Stemmer###
(992603, 992606)
 Magnetotransport and superconducting properties are investigated foruniformly La-doped SrTiO3 films and GdTiO3/SrTiO3 heterostructures,respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GdTiO3/SrTiO3
###Carrier-controlled ferromagnetism in SrTiO3|Pouya Moetakef,James R. Williams,Daniel G. Ouellette,Adam Kajdos,David Goldhaber-Gordon,S. James Allen,Susanne Stemmer###
(992612, 992620)
 Magnetotransport and superconducting properties are investigated foruniformly La-doped SrTiO3 films and GdTiO3/SrTiO3 heterostructures,respectively.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

GdTiO3/SrTiO3
###Carrier-controlled ferromagnetism in SrTiO3|Pouya Moetakef,James R. Williams,Daniel G. Ouellette,Adam Kajdos,David Goldhaber-Gordon,S. James Allen,Susanne Stemmer###
(992629, 992637)
 GdTiO3/SrTiO3 interfaces exhibit a high-density two-dimensionalelectron gas on the SrTiO3-side of the interface, while for the SrTiO3 filmscarriers are provided by the dopant atoms.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

SrTiO3
###Carrier-controlled ferromagnetism in SrTiO3|Pouya Moetakef,James R. Williams,Daniel G. Ouellette,Adam Kajdos,David Goldhaber-Gordon,S. James Allen,Susanne Stemmer###
(992662, 992665)
 GdTiO3/SrTiO3 interfaces exhibit a high-density two-dimensionalelectron gas on the SrTiO3-side of the interface, while for the SrTiO3 filmscarriers are provided by the dopant atoms.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Carrier-controlled ferromagnetism in SrTiO3|Pouya Moetakef,James R. Williams,Daniel G. Ouellette,Adam Kajdos,David Goldhaber-Gordon,S. James Allen,Susanne Stemmer###
(992682, 992685)
 GdTiO3/SrTiO3 interfaces exhibit a high-density two-dimensionalelectron gas on the SrTiO3-side of the interface, while for the SrTiO3 filmscarriers are provided by the dopant atoms.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Carrier-controlled ferromagnetism in SrTiO3|Pouya Moetakef,James R. Williams,Daniel G. Ouellette,Adam Kajdos,David Goldhaber-Gordon,S. James Allen,Susanne Stemmer###
(992751, 992754)
 For the uniformly doped SrTiO3 films, the Curie temperatureis found to increase with doping and to coexist with superconductivity forcarrier concentrations on the high-density side of the superconducting dome.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GdTiO3/SrTiO3
###Carrier-controlled ferromagnetism in SrTiO3|Pouya Moetakef,James R. Williams,Daniel G. Ouellette,Adam Kajdos,David Goldhaber-Gordon,S. James Allen,Susanne Stemmer###
(992825, 992833)
The Curie temperature of the GdTiO3/SrTiO3 heterostructures scales with thethickness of the SrTiO3 quantum well.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

SrTiO3
###Carrier-controlled ferromagnetism in SrTiO3|Pouya Moetakef,James R. Williams,Daniel G. Ouellette,Adam Kajdos,David Goldhaber-Gordon,S. James Allen,Susanne Stemmer###
(992850, 992853)
The Curie temperature of the GdTiO3/SrTiO3 heterostructures scales with thethickness of the SrTiO3 quantum well.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Carrier-controlled ferromagnetism in SrTiO3|Pouya Moetakef,James R. Williams,Daniel G. Ouellette,Adam Kajdos,David Goldhaber-Gordon,S. James Allen,Susanne Stemmer###
(992893, 992896)
 The results are used to construct astability diagram for the ferromagnetic and superconducting phases of SrTiO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si/SiGe/Si
###Magnetoresistivity in a Tilted Magnetic Field in p-Si/SiGe/Si Heterostructures with an Anisotropic g-Factor: Part II|I. L. Drichko,I. Yu. Smirnov,A. V. Suslov,O. A. Mironov,D. R. Leadley###
(992923, 992928)
Magnetoresistivity in a Tilted Magnetic Field in p<missing VAR>-Si/SiGe/Si Heterostructures with an Anisotropic g<missing VAR>-Factor Part II.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[150.0, 11, ',', 2],[204.0, 10, ',', 4],[207.0, -2, ',', 4]

II
###Magnetoresistivity in a Tilted Magnetic Field in p-Si/SiGe/Si Heterostructures with an Anisotropic g-Factor: Part II|I. L. Drichko,I. Yu. Smirnov,A. V. Suslov,O. A. Mironov,D. R. Leadley###
(992944, 992945)
Magnetoresistivity in a Tilted Magnetic Field in p<missing VAR>-Si/SiGe/Si Heterostructures with an Anisotropic g<missing VAR>-Factor Part II.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 11, ',', 2],[187.0, 10, ',', 4],[190.0, -2, ',', 4]

Si/SiGe/Si
###Magnetoresistivity in a Tilted Magnetic Field in p-Si/SiGe/Si Heterostructures with an Anisotropic g-Factor: Part II|I. L. Drichko,I. Yu. Smirnov,A. V. Suslov,O. A. Mironov,D. R. Leadley###
(992973, 992978)
 The magnetoresistance components rhoxx and rhoxy were measured intwo p<missing VAR>-Si/SiGe/Si quantum wells that have an anisotropic g<missing VAR>-factor in a tiltedmagnetic field as a function of temperature, field and tilt angle.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[100.0, 11, ',', 1],[154.0, 10, ',', 3],[157.0, -2, ',', 3]

F
###Magnetoresistivity in a Tilted Magnetic Field in p-Si/SiGe/Si Heterostructures with an Anisotropic g-Factor: Part II|I. L. Drichko,I. Yu. Smirnov,A. V. Suslov,O. A. Mironov,D. R. Leadley###
(993050, 993050)
 Activationenergy measurements demonstrate the existence of a ferromagnetic-paramagnetic(F-P) transition for a sample with a hole density ofp<missing VAR>2times1011,cm-2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 11, ',', 0],[82.0, 10, ',', 2],[85.0, -2, ',', 2]

P
###Magnetoresistivity in a Tilted Magnetic Field in p-Si/SiGe/Si Heterostructures with an Anisotropic g-Factor: Part II|I. L. Drichko,I. Yu. Smirnov,A. V. Suslov,O. A. Mironov,D. R. Leadley###
(993052, 993052)
 Activationenergy measurements demonstrate the existence of a ferromagnetic-paramagnetic(F-P) transition for a sample with a hole density ofp<missing VAR>2times1011,cm-2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 11, ',', 0],[80.0, 10, ',', 2],[83.0, -2, ',', 2]

Ca1-xSr
###Metamagnetic transition in Ca$_{1-x}$Sr$_x$Co$_2$As$_2$($x$ = 0 and 0.1) single crystals|J. J. Ying,Y. J. Yan,A. F. Wang,Z. J. Xiang,P. Cheng,G. J. Ye,X. H. Chen###
(993229, 993233)
Metamagnetic transition in Ca1-xSrx<missing VAR>Co2As2(x<missing VAR>  0 and 0.1) single crystals.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[9.0, 0, 'and', 0],[70.0, 70, 'K', 2],[73.0, 90, 'K', 2],[140.0, 3.5, 'T', 3],[143.0, 1.5, 'T', 3],[202.0, 4.5, 'T', 4],[244.0, 7, 'T', 5]

As2
###Metamagnetic transition in Ca$_{1-x}$Sr$_x$Co$_2$As$_2$($x$ = 0 and 0.1) single crystals|J. J. Ying,Y. J. Yan,A. F. Wang,Z. J. Xiang,P. Cheng,G. J. Ye,X. H. Chen###
(993237, 993238)
Metamagnetic transition in Ca1-xSrx<missing VAR>Co2As2(x<missing VAR>  0 and 0.1) single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 0, 'and', 0],[65.0, 70, 'K', 2],[68.0, 90, 'K', 2],[135.0, 3.5, 'T', 3],[138.0, 1.5, 'T', 3],[197.0, 4.5, 'T', 4],[239.0, 7, 'T', 5]

CaCo2As2
###Metamagnetic transition in Ca$_{1-x}$Sr$_x$Co$_2$As$_2$($x$ = 0 and 0.1) single crystals|J. J. Ying,Y. J. Yan,A. F. Wang,Z. J. Xiang,P. Cheng,G. J. Ye,X. H. Chen###
(993268, 993272)
 We report the magnetism and transport measurements of CaCo2As2 andCa0.9Sr0.1Co2As2 single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0.4,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 0, 'and', 1],[31.0, 70, 'K', 1],[34.0, 90, 'K', 1],[101.0, 3.5, 'T', 2],[104.0, 1.5, 'T', 2],[163.0, 4.5, 'T', 3],[205.0, 7, 'T', 4]

Ca0.9Sr0.1Co2As2
###Metamagnetic transition in Ca$_{1-x}$Sr$_x$Co$_2$As$_2$($x$ = 0 and 0.1) single crystals|J. J. Ying,Y. J. Yan,A. F. Wang,Z. J. Xiang,P. Cheng,G. J. Ye,X. H. Chen###
(993277, 993284)
 We report the magnetism and transport measurements of CaCo2As2 andCa0.9Sr0.1Co2As2 single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18,0,0,0,0,0,0,0.4,0,0,0,0,0,0.4,0,0,0,0,0.02,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 0, 'and', 1],[19.0, 70, 'K', 1],[22.0, 90, 'K', 1],[89.0, 3.5, 'T', 2],[92.0, 1.5, 'T', 2],[151.0, 4.5, 'T', 3],[193.0, 7, 'T', 4]

CaCo2As2
###Metamagnetic transition in Ca$_{1-x}$Sr$_x$Co$_2$As$_2$($x$ = 0 and 0.1) single crystals|J. J. Ying,Y. J. Yan,A. F. Wang,Z. J. Xiang,P. Cheng,G. J. Ye,X. H. Chen###
(993310, 993314)
 Antiferromagnetic transitionwas observed at about 70 K and 90 K for CaCo2As2 andCa0.9Sr0.1Co2As2, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0.4,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 0, 'and', 2],[7.0, 70, 'K', 0],[4.0, 90, 'K', 0],[59.0, 3.5, 'T', 1],[62.0, 1.5, 'T', 1],[121.0, 4.5, 'T', 2],[163.0, 7, 'T', 3]

Ca0.9Sr0.1Co2As2
###Metamagnetic transition in Ca$_{1-x}$Sr$_x$Co$_2$As$_2$($x$ = 0 and 0.1) single crystals|J. J. Ying,Y. J. Yan,A. F. Wang,Z. J. Xiang,P. Cheng,G. J. Ye,X. H. Chen###
(993319, 993326)
 Antiferromagnetic transitionwas observed at about 70 K and 90 K for CaCo2As2 andCa0.9Sr0.1Co2As2, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18,0,0,0,0,0,0,0.4,0,0,0,0,0,0.4,0,0,0,0,0.02,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 0, 'and', 2],[16.0, 70, 'K', 0],[13.0, 90, 'K', 0],[47.0, 3.5, 'T', 1],[50.0, 1.5, 'T', 1],[109.0, 4.5, 'T', 2],[151.0, 7, 'T', 3]

Ca0.9Sr0.1Co2As2
###Metamagnetic transition in Ca$_{1-x}$Sr$_x$Co$_2$As$_2$($x$ = 0 and 0.1) single crystals|J. J. Ying,Y. J. Yan,A. F. Wang,Z. J. Xiang,P. Cheng,G. J. Ye,X. H. Chen###
(993440, 993447)
 For the field alongab-plane, spins can also be fully polarized above the field of 4.5 T forCa0.9Sr0.1Co2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18,0,0,0,0,0,0,0.4,0,0,0,0,0,0.4,0,0,0,0,0.02,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[198.0, 0, 'and', 4],[137.0, 70, 'K', 2],[134.0, 90, 'K', 2],[67.0, 3.5, 'T', 1],[64.0, 1.5, 'T', 1],[5.0, 4.5, 'T', 0],[30.0, 7, 'T', 1]

CaCo2As2
###Metamagnetic transition in Ca$_{1-x}$Sr$_x$Co$_2$As$_2$($x$ = 0 and 0.1) single crystals|J. J. Ying,Y. J. Yan,A. F. Wang,Z. J. Xiang,P. Cheng,G. J. Ye,X. H. Chen###
(993454, 993458)
 While for CaCo2As2, spins can not befully polarized up to 7 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0.4,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[212.0, 0, 'and', 5],[151.0, 70, 'K', 3],[148.0, 90, 'K', 3],[81.0, 3.5, 'T', 2],[78.0, 1.5, 'T', 2],[19.0, 4.5, 'T', 1],[19.0, 7, 'T', 0]

F
###Metamagnetic transition in Ca$_{1-x}$Sr$_x$Co$_2$As$_2$($x$ = 0 and 0.1) single crystals|J. J. Ying,Y. J. Yan,A. F. Wang,Z. J. Xiang,P. Cheng,G. J. Ye,X. H. Chen###
(993533, 993533)
 We proposed the cobalt moments of these twomaterials should be ordered ferromagnetically within the ab-plane butantiferromagnetically along the c<missing VAR>-axis(A-type AFM).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[291.0, 0, 'and', 6],[230.0, 70, 'K', 4],[227.0, 90, 'K', 4],[160.0, 3.5, 'T', 3],[157.0, 1.5, 'T', 3],[98.0, 4.5, 'T', 2],[56.0, 7, 'T', 1]

SrTiO3-x
###Magnetic-field induced resistivity minimum with in-plane linear magnetoresistance of the Fermi liquid in SrTiO3-x single crystals|Z. Q. Liu,W. M. Lü,X. Wang,Z. Huang,A. Annadi,S. W. Zeng,T. Venkatesan,Ariando###
(993576, 993581)
Magnetic-field induced resistivity minimum with in-plane linear magnetoresistance of the Fermi liquid in SrTiO3-x single crystals.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[145.0, 0.5, 'T', 3],[318.0, 58, ',', 9]

SrTiO3-x
###Magnetic-field induced resistivity minimum with in-plane linear magnetoresistance of the Fermi liquid in SrTiO3-x single crystals|Z. Q. Liu,W. M. Lü,X. Wang,Z. Huang,A. Annadi,S. W. Zeng,T. Venkatesan,Ariando###
(993613, 993618)
 We report novel magnetotransport properties of the low temperature Fermiliquid in SrTiO3-x single crystals.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[108.0, 0.5, 'T', 2],[281.0, 58, ',', 8]

SrTiO3-x
###Magnetic-field induced resistivity minimum with in-plane linear magnetoresistance of the Fermi liquid in SrTiO3-x single crystals|Z. Q. Liu,W. M. Lü,X. Wang,Z. Huang,A. Annadi,S. W. Zeng,T. Venkatesan,Ariando###
(993794, 993799)
 The largeanisotropy in the transverse M<missing VAR>Rs reveals the strong surface interlayerscattering due to the large gradient of oxygen vacancy concentration from thesurface to the interior of SrTiO3-x single crystals.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[68.0, 0.5, 'T', 1],[100.0, 58, ',', 5]

B
###Magnetic-field induced resistivity minimum with in-plane linear magnetoresistance of the Fermi liquid in SrTiO3-x single crystals|Z. Q. Liu,W. M. Lü,X. Wang,Z. Huang,A. Annadi,S. W. Zeng,T. Venkatesan,Ariando###
(993897, 993897)
 B 58, 2788(1998)].
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[171.0, 0.5, 'T', 6],[2.0, 58, ',', 0]

Bi2
###Gap like structure in a nonsuperconducting layered oxycarbonate Bi$_{2+x}$Sr$_{4-x}$Cu$_2$CO$_3$O$_{8+δ}$ single crystal|S. I. Vedeneev,B. A. Piot,D. K. Maude###
(993935, 993936)
Gap like structure in a nonsuperconducting layered oxycarbonate Bi2x<missing VAR>Sr4-xCu2CO3O8 single crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 10, 'mK', 1]

Sr4-xCu2CO3O8
###Gap like structure in a nonsuperconducting layered oxycarbonate Bi$_{2+x}$Sr$_{4-x}$Cu$_2$CO$_3$O$_{8+δ}$ single crystal|S. I. Vedeneev,B. A. Piot,D. K. Maude###
(993938, 993948)
Gap like structure in a nonsuperconducting layered oxycarbonate Bi2x<missing VAR>Sr4-xCu2CO3O8 single crystal.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[53.0, 10, 'mK', 1]

I
###Gap like structure in a nonsuperconducting layered oxycarbonate Bi$_{2+x}$Sr$_{4-x}$Cu$_2$CO$_3$O$_{8+δ}$ single crystal|S. I. Vedeneev,B. A. Piot,D. K. Maude###
(993981, 993981)
 The magnetic field and temperature dependence of the in-plane tunnelingconductance d<missing VAR>I/d<missing VAR>V(V) in high-quality nonsuperconducting (down to 10 mK)layered oxycarbonate Bi2x<missing VAR>Sr4-xCu2CO3O8delta singlecrystals has been investigated using break junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 10, 'mK', 0]

V(V)
###Gap like structure in a nonsuperconducting layered oxycarbonate Bi$_{2+x}$Sr$_{4-x}$Cu$_2$CO$_3$O$_{8+δ}$ single crystal|S. I. Vedeneev,B. A. Piot,D. K. Maude###
(993984, 993987)
 The magnetic field and temperature dependence of the in-plane tunnelingconductance d<missing VAR>I/d<missing VAR>V(V) in high-quality nonsuperconducting (down to 10 mK)layered oxycarbonate Bi2x<missing VAR>Sr4-xCu2CO3O8delta singlecrystals has been investigated using break junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 10, 'mK', 0]

Bi2
###Gap like structure in a nonsuperconducting layered oxycarbonate Bi$_{2+x}$Sr$_{4-x}$Cu$_2$CO$_3$O$_{8+δ}$ single crystal|S. I. Vedeneev,B. A. Piot,D. K. Maude###
(994009, 994010)
 The magnetic field and temperature dependence of the in-plane tunnelingconductance d<missing VAR>I/d<missing VAR>V(V) in high-quality nonsuperconducting (down to 10 mK)layered oxycarbonate Bi2x<missing VAR>Sr4-xCu2CO3O8delta singlecrystals has been investigated using break junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 10, 'mK', 0]

Sr4-xCu2CO3O8
###Gap like structure in a nonsuperconducting layered oxycarbonate Bi$_{2+x}$Sr$_{4-x}$Cu$_2$CO$_3$O$_{8+δ}$ single crystal|S. I. Vedeneev,B. A. Piot,D. K. Maude###
(994012, 994022)
 The magnetic field and temperature dependence of the in-plane tunnelingconductance d<missing VAR>I/d<missing VAR>V(V) in high-quality nonsuperconducting (down to 10 mK)layered oxycarbonate Bi2x<missing VAR>Sr4-xCu2CO3O8delta singlecrystals has been investigated using break junctions.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[11.0, 10, 'mK', 0]

H
###Gap like structure in a nonsuperconducting layered oxycarbonate Bi$_{2+x}$Sr$_{4-x}$Cu$_2$CO$_3$O$_{8+δ}$ single crystal|S. I. Vedeneev,B. A. Piot,D. K. Maude###
(994063, 994063)
 Combining measurements ofthe in-plane magnetoresistivity rhoab(T<missing VAR>,H) and the magnetotunneling, wepresent evidence for the existence of a small pseudogap in anonsuperconducting cuprate, without local incoherent pairs or any correlationphenomena associated with superconductivity.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 10, 'mK', 1]

In
###How branching can change the conductance of ballistic semiconductor devices|D. Maryenko,J. J. Metzger,F. Ospald,V. Umansky,R. Fleischmann,T. Geisel,K. von Klitzing,J. H. Smet###
(994326, 994326)
 In a corner-shaped ballistic device based on a GaAs/AlGaAstwo-dimensional electron gas we observe a splitting of the commensurabilitypeaks in the magnetoresistance curve.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs/AlGaAs
###How branching can change the conductance of ballistic semiconductor devices|D. Maryenko,J. J. Metzger,F. Ospald,V. Umansky,R. Fleischmann,T. Geisel,K. von Klitzing,J. H. Smet###
(994344, 994349)
 In a corner-shaped ballistic device based on a GaAs/AlGaAstwo-dimensional electron gas we observe a splitting of the commensurabilitypeaks in the magnetoresistance curve.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

At
###How branching can change the conductance of ballistic semiconductor devices|D. Maryenko,J. J. Metzger,F. Ospald,V. Umansky,R. Fleischmann,T. Geisel,K. von Klitzing,J. H. Smet###
(994490, 994490)
 At the same time magnetic focusing peaks are largelyunaffected by the disorder potential.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaMnO3
###Structural transitions and transport-half-metallic ferromagnetism in LaMnO3 at elevated pressure|J. He,M. -X. Chen,X. -Q Chen,C. Franchini###
(994544, 994547)
Structural transitions and transport-half-metallic ferromagnetism in LaMnO3 at elevated pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Structural transitions and transport-half-metallic ferromagnetism in LaMnO3 at elevated pressure|J. He,M. -X. Chen,X. -Q Chen,C. Franchini###
(994604, 994604)
 By means of hybrid density functional theory we investigate the evolution ofthe structural, electronic and magnetic properties of the colossalmagnetoresistance (CMR) parent compound LaMnO3 under pressure.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaMnO3
###Structural transitions and transport-half-metallic ferromagnetism in LaMnO3 at elevated pressure|J. He,M. -X. Chen,X. -Q Chen,C. Franchini###
(994613, 994616)
 By means of hybrid density functional theory we investigate the evolution ofthe structural, electronic and magnetic properties of the colossalmagnetoresistance (CMR) parent compound LaMnO3 under pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Structural transitions and transport-half-metallic ferromagnetism in LaMnO3 at elevated pressure|J. He,M. -X. Chen,X. -Q Chen,C. Franchini###
(994644, 994644)
 We predict atransition from a low pressure antiferromagnetic (AFM) insulator to a highpressure ferromagnetic (FM) transport half-metal (tHM), characterized by alarge spin polarization ( 80-90 %).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Structural transitions and transport-half-metallic ferromagnetism in LaMnO3 at elevated pressure|J. He,M. -X. Chen,X. -Q Chen,C. Franchini###
(994662, 994662)
 We predict atransition from a low pressure antiferromagnetic (AFM) insulator to a highpressure ferromagnetic (FM) transport half-metal (tHM), characterized by alarge spin polarization ( 80-90 %).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Structural transitions and transport-half-metallic ferromagnetism in LaMnO3 at elevated pressure|J. He,M. -X. Chen,X. -Q Chen,C. Franchini###
(994704, 994704)
 The FM-tHM<missing VAR> transition is associated with aprogressive quenching of the cooperative Jahn-Teller (JT) distortions whichtransform the Pnma orthorhombic phase into a perfect cubic one (through amixed phase in which JT-distorted and regular MnO6 octahedra coexist), and witha high-spin (S2, m<missing VAR>Mn3.7 muB) to low-spin (S1, m<missing VAR>Mn1.7 muB) magneticmoment collapse.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Structural transitions and transport-half-metallic ferromagnetism in LaMnO3 at elevated pressure|J. He,M. -X. Chen,X. -Q Chen,C. Franchini###
(994708, 994708)
 The FM-tHM<missing VAR> transition is associated with aprogressive quenching of the cooperative Jahn-Teller (JT) distortions whichtransform the Pnma orthorhombic phase into a perfect cubic one (through amixed phase in which JT-distorted and regular MnO6 octahedra coexist), and witha high-spin (S2, m<missing VAR>Mn3.7 muB) to low-spin (S1, m<missing VAR>Mn1.7 muB) magneticmoment collapse.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnO6
###Structural transitions and transport-half-metallic ferromagnetism in LaMnO3 at elevated pressure|J. He,M. -X. Chen,X. -Q Chen,C. Franchini###
(994789, 994791)
 The FM-tHM<missing VAR> transition is associated with aprogressive quenching of the cooperative Jahn-Teller (JT) distortions whichtransform the Pnma orthorhombic phase into a perfect cubic one (through amixed phase in which JT-distorted and regular MnO6 octahedra coexist), and witha high-spin (S2, m<missing VAR>Mn3.7 muB) to low-spin (S1, m<missing VAR>Mn1.7 muB) magneticmoment collapse.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S2
###Structural transitions and transport-half-metallic ferromagnetism in LaMnO3 at elevated pressure|J. He,M. -X. Chen,X. -Q Chen,C. Franchini###
(994811, 994812)
 The FM-tHM<missing VAR> transition is associated with aprogressive quenching of the cooperative Jahn-Teller (JT) distortions whichtransform the Pnma orthorhombic phase into a perfect cubic one (through amixed phase in which JT-distorted and regular MnO6 octahedra coexist), and witha high-spin (S2, m<missing VAR>Mn3.7 muB) to low-spin (S1, m<missing VAR>Mn1.7 muB) magneticmoment collapse.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn3.7
###Structural transitions and transport-half-metallic ferromagnetism in LaMnO3 at elevated pressure|J. He,M. -X. Chen,X. -Q Chen,C. Franchini###
(994816, 994817)
 The FM-tHM<missing VAR> transition is associated with aprogressive quenching of the cooperative Jahn-Teller (JT) distortions whichtransform the Pnma orthorhombic phase into a perfect cubic one (through amixed phase in which JT-distorted and regular MnO6 octahedra coexist), and witha high-spin (S2, m<missing VAR>Mn3.7 muB) to low-spin (S1, m<missing VAR>Mn1.7 muB) magneticmoment collapse.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Structural transitions and transport-half-metallic ferromagnetism in LaMnO3 at elevated pressure|J. He,M. -X. Chen,X. -Q Chen,C. Franchini###
(994820, 994820)
 The FM-tHM<missing VAR> transition is associated with aprogressive quenching of the cooperative Jahn-Teller (JT) distortions whichtransform the Pnma orthorhombic phase into a perfect cubic one (through amixed phase in which JT-distorted and regular MnO6 octahedra coexist), and witha high-spin (S2, m<missing VAR>Mn3.7 muB) to low-spin (S1, m<missing VAR>Mn1.7 muB) magneticmoment collapse.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S1
###Structural transitions and transport-half-metallic ferromagnetism in LaMnO3 at elevated pressure|J. He,M. -X. Chen,X. -Q Chen,C. Franchini###
(994830, 994831)
 The FM-tHM<missing VAR> transition is associated with aprogressive quenching of the cooperative Jahn-Teller (JT) distortions whichtransform the Pnma orthorhombic phase into a perfect cubic one (through amixed phase in which JT-distorted and regular MnO6 octahedra coexist), and witha high-spin (S2, m<missing VAR>Mn3.7 muB) to low-spin (S1, m<missing VAR>Mn1.7 muB) magneticmoment collapse.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn1.7
###Structural transitions and transport-half-metallic ferromagnetism in LaMnO3 at elevated pressure|J. He,M. -X. Chen,X. -Q Chen,C. Franchini###
(994835, 994836)
 The FM-tHM<missing VAR> transition is associated with aprogressive quenching of the cooperative Jahn-Teller (JT) distortions whichtransform the Pnma orthorhombic phase into a perfect cubic one (through amixed phase in which JT-distorted and regular MnO6 octahedra coexist), and witha high-spin (S2, m<missing VAR>Mn3.7 muB) to low-spin (S1, m<missing VAR>Mn1.7 muB) magneticmoment collapse.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Structural transitions and transport-half-metallic ferromagnetism in LaMnO3 at elevated pressure|J. He,M. -X. Chen,X. -Q Chen,C. Franchini###
(994839, 994839)
 The FM-tHM<missing VAR> transition is associated with aprogressive quenching of the cooperative Jahn-Teller (JT) distortions whichtransform the Pnma orthorhombic phase into a perfect cubic one (through amixed phase in which JT-distorted and regular MnO6 octahedra coexist), and witha high-spin (S2, m<missing VAR>Mn3.7 muB) to low-spin (S1, m<missing VAR>Mn1.7 muB) magneticmoment collapse.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Structural transitions and transport-half-metallic ferromagnetism in LaMnO3 at elevated pressure|J. He,M. -X. Chen,X. -Q Chen,C. Franchini###
(994892, 994892)
 These results interpret the progression of the experimentallyobserved non-Mott metalization process and open up the possibility of realizingCMR behaviors in a stoichiometric manganite.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###Reply to Comment on "High-field studies of superconducting fluctuations in high-Tc cuprates: Evidence for a small gap distinct from the large pseudogap" by M.V. Ramallo et al|F. Rullier-Albenque,H. Alloul,G. Rikken###
(994939, 994939)
Reply to Comment on High-field studies of superconducting fluctuations in high-Tc cuprates Evidence for a small gap distinct from the large pseudogap by M<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[383.0, 1.1, 'Tc', 10]

V
###Reply to Comment on "High-field studies of superconducting fluctuations in high-Tc cuprates: Evidence for a small gap distinct from the large pseudogap" by M.V. Ramallo et al|F. Rullier-Albenque,H. Alloul,G. Rikken###
(994967, 994967)
V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[355.0, 1.1, 'Tc', 9]

B84
###Reply to Comment on "High-field studies of superconducting fluctuations in high-Tc cuprates: Evidence for a small gap distinct from the large pseudogap" by M.V. Ramallo et al|F. Rullier-Albenque,H. Alloul,G. Rikken###
(994995, 994996)
B84,014522(2011)allowed us to establish that the superconducting fluctuations (SCF) always dieout sharply with increasing T<missing VAR>.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[326.0, 1.1, 'Tc', 5]

(SCF)
###Reply to Comment on "High-field studies of superconducting fluctuations in high-Tc cuprates: Evidence for a small gap distinct from the large pseudogap" by M.V. Ramallo et al|F. Rullier-Albenque,H. Alloul,G. Rikken###
(995020, 995024)
B84,014522(2011)allowed us to establish that the superconducting fluctuations (SCF) always dieout sharply with increasing T<missing VAR>.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[298.0, 1.1, 'Tc', 5]

SCF
###Reply to Comment on "High-field studies of superconducting fluctuations in high-Tc cuprates: Evidence for a small gap distinct from the large pseudogap" by M.V. Ramallo et al|F. Rullier-Albenque,H. Alloul,G. Rikken###
(995079, 995081)
, this sharp cutoff of SCF measured in YBa2Cu3O6x<missing VAR> depends onhole doping and/or disorder.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[241.0, 1.1, 'Tc', 3]

YBa2Cu3O6
###Reply to Comment on "High-field studies of superconducting fluctuations in high-Tc cuprates: Evidence for a small gap distinct from the large pseudogap" by M.V. Ramallo et al|F. Rullier-Albenque,H. Alloul,G. Rikken###
(995087, 995093)
, this sharp cutoff of SCF measured in YBa2Cu3O6x<missing VAR> depends onhole doping and/or disorder.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[229.0, 1.1, 'Tc', 3]

CuO2
###Reply to Comment on "High-field studies of superconducting fluctuations in high-Tc cuprates: Evidence for a small gap distinct from the large pseudogap" by M.V. Ramallo et al|F. Rullier-Albenque,H. Alloul,G. Rikken###
(995210, 995212)
 Furthermore, to explain quantitatively our data nearoptimal doping using this model they need to consider that fluctuations in thetwo CuO2 planes of a bilayer are totally decoupled, which is not physicallywell justified.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 1.1, 'Tc', 1]

FeRh
###Hall effect characterization of electronic transition behind the metamagnetic transition in FeRh|M. A. de Vries,M. L. Loving,A. P. Mihai,L. H. Lewis,D. Heiman,C. H. Marrows###
(995355, 995356)
Hall effect characterization of electronic transition behind the metamagnetic transition in FeRh.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[251.0, 3, 'd', 4]

CsCl
###Hall effect characterization of electronic transition behind the metamagnetic transition in FeRh|M. A. de Vries,M. L. Loving,A. P. Mihai,L. H. Lewis,D. Heiman,C. H. Marrows###
(995386, 995387)
 The antiferromagnetic ground state and the metamagnetic transition to theferromagnetic state of CsCl-ordered FeRh epilayers have been characterizedusing Hall and magnetoresistance measure- ments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[220.0, 3, 'd', 3]

FeRh
###Hall effect characterization of electronic transition behind the metamagnetic transition in FeRh|M. A. de Vries,M. L. Loving,A. P. Mihai,L. H. Lewis,D. Heiman,C. H. Marrows###
(995391, 995392)
 The antiferromagnetic ground state and the metamagnetic transition to theferromagnetic state of CsCl-ordered FeRh epilayers have been characterizedusing Hall and magnetoresistance measure- ments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[215.0, 3, 'd', 3]

Fe/Rh
###Hall effect characterization of electronic transition behind the metamagnetic transition in FeRh|M. A. de Vries,M. L. Loving,A. P. Mihai,L. H. Lewis,D. Heiman,C. H. Marrows###
(995542, 995544)
 The data reveal that this sub-metallicdensity of electron-like majority carriers in the antiferromagnetic phase areattributable to intrinsic doping from Fe/Rh substitution defects, withapproximately two electrons per pair of atoms swapped.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[63.0, 3, 'd', 1]

Fe
###Hall effect characterization of electronic transition behind the metamagnetic transition in FeRh|M. A. de Vries,M. L. Loving,A. P. Mihai,L. H. Lewis,D. Heiman,C. H. Marrows###
(995606, 995606)
 Based on theseobservations it is suggested that an orbital selective Mott transition,selective to the Fe 3d electrons drives the metamagnetic transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[1.0, 3, 'd', 0]

Fe/GaAs
###Tunnelling anisotropic magnetoresistance of Fe/GaAs/Ag(001) junctions from first principles: Effect of hybridized interface resonances|Rudolf Sykora,Ilja Turek###
(995636, 995639)
Tunnelling anisotropic magnetoresistance of Fe/GaAs/Ag(001) junctions from first principles Effect of hybridized interface resonances.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Fe/GaAs
###Tunnelling anisotropic magnetoresistance of Fe/GaAs/Ag(001) junctions from first principles: Effect of hybridized interface resonances|Rudolf Sykora,Ilja Turek###
(995679, 995682)
 Results of first-principles calculations of the Fe/GaAs/Ag(001) epitaxialtunnel junctions reveal that hybridization of interface resonances formed atboth interfaces can enhance the tunnelling anisotropic magnetoresistance (TAMR)of the systems.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

In
###Coulomb gap triptychs, $\sqrt{2}$ effective charge, and hopping transport in periodic arrays of superconductor grains|Tianran Chen,Brian Skinner,B. I. Shklovskii###
(995982, 995982)
 In granular superconductors, individual grains can contain bound Cooper pairswhile the system as a whole is strongly insulating.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Coulomb gap triptychs, $\sqrt{2}$ effective charge, and hopping transport in periodic arrays of superconductor grains|Tianran Chen,Brian Skinner,B. I. Shklovskii###
(996023, 996023)
 In such cases theconductivity is determined by electron hopping between localized states inindividual grains.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Coulomb gap triptychs, $\sqrt{2}$ effective charge, and hopping transport in periodic arrays of superconductor grains|Tianran Chen,Brian Skinner,B. I. Shklovskii###
(996195, 996195)
 At a particularcritical value of Delta, one can define an effective charge sqrt2e<missing VAR> thatcharacterizes the density of states and the hopping transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LiFeAs
###Multiorbital effects on the transport and the superconducting fluctuations in LiFeAs|F. Rullier-Albenque,D. Colson,A. Forget,H. Alloul###
(996303, 996305)
Multiorbital effects on the transport and the superconducting fluctuations in LiFeAs.
Featurization terminated normally.
0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[237.0, 1.4, 'Tc', 5]

LiFeAs
###Multiorbital effects on the transport and the superconducting fluctuations in LiFeAs|F. Rullier-Albenque,D. Colson,A. Forget,H. Alloul###
(996349, 996351)
 The resistivity, Hall effect and transverse magnetoresistance (MR) have beenmeasured in low residual resistivity single crystals of LiFeAs.
Featurization terminated normally.
0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[191.0, 1.4, 'Tc', 4]

Tc
###Multiorbital effects on the transport and the superconducting fluctuations in LiFeAs|F. Rullier-Albenque,D. Colson,A. Forget,H. Alloul###
(996439, 996439)
 Near Tc low field deviations of the MR with respect to a H2variation permit us to extract the superconducting fluctuation contribution tothe conductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 1.4, 'Tc', 1]

H2
###Multiorbital effects on the transport and the superconducting fluctuations in LiFeAs|F. Rullier-Albenque,D. Colson,A. Forget,H. Alloul###
(996462, 996463)
 Near Tc low field deviations of the MR with respect to a H2variation permit us to extract the superconducting fluctuation contribution tothe conductivity.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 1.4, 'Tc', 1]

Tc
###Multiorbital effects on the transport and the superconducting fluctuations in LiFeAs|F. Rullier-Albenque,D. Colson,A. Forget,H. Alloul###
(996496, 996496)
 Though below Tc the anisotropy of superconductivity is rathersmall, the superconducting fluctuations display a quasi ideal two-dimensionalbehavior which persists up to 1.4 Tc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 1.4, 'Tc', 0]

Nb
###Large Magnetoresistance Oscillations in Mesoscopic Superconductors Due to Current-Excited Moving Vortices|G. R. Berdiyorov,M. V. Milošević,M. L. Latimer,Z. L. Xiao,W. K. Kwok,F. M. Peeters###
(996960, 996960)
 We show in the case of a superconducting Nb ladder that a mesoscopicsuperconductor typically exhibits magnetoresistance oscillations whoseamplitude and temperature dependence are different from those stemming from theLittle-Parks effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnAsO
###A variable temperature study of the crystal and magnetic structures of the giant magnetoresistant materials LnMnAsO (Ln = La, Nd)|N. Emery,E. J. Wildman,J. M. S. Skakle,R. I. Smith,A. N. Fitch,A. C. Mclaughlin###
(997250, 997252)
A variable temperature study of the crystal and magnetic structures of the giant magnetoresistant materials LnMnAsO (Ln  La, Nd).
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[190.0, 2, 'K', 3],[244.0, 2, 'K', 5],[283.0, 150, 'K', 5]

La
###A variable temperature study of the crystal and magnetic structures of the giant magnetoresistant materials LnMnAsO (Ln = La, Nd)|N. Emery,E. J. Wildman,J. M. S. Skakle,R. I. Smith,A. N. Fitch,A. C. Mclaughlin###
(997258, 997258)
A variable temperature study of the crystal and magnetic structures of the giant magnetoresistant materials LnMnAsO (Ln  La, Nd).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[184.0, 2, 'K', 3],[238.0, 2, 'K', 5],[277.0, 150, 'K', 5]

Nd
###A variable temperature study of the crystal and magnetic structures of the giant magnetoresistant materials LnMnAsO (Ln = La, Nd)|N. Emery,E. J. Wildman,J. M. S. Skakle,R. I. Smith,A. N. Fitch,A. C. Mclaughlin###
(997261, 997261)
A variable temperature study of the crystal and magnetic structures of the giant magnetoresistant materials LnMnAsO (Ln  La, Nd).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 2, 'K', 3],[235.0, 2, 'K', 5],[274.0, 150, 'K', 5]

MnAsO
###A variable temperature study of the crystal and magnetic structures of the giant magnetoresistant materials LnMnAsO (Ln = La, Nd)|N. Emery,E. J. Wildman,J. M. S. Skakle,R. I. Smith,A. N. Fitch,A. C. Mclaughlin###
(997299, 997301)
 A variable temperature neutron and synchrotron diffraction study have beenperformed on the giant magnetoresistant oxypnictides LnMnAsO (Ln  La, Nd).
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 2, 'K', 2],[195.0, 2, 'K', 4],[234.0, 150, 'K', 4]

La
###A variable temperature study of the crystal and magnetic structures of the giant magnetoresistant materials LnMnAsO (Ln = La, Nd)|N. Emery,E. J. Wildman,J. M. S. Skakle,R. I. Smith,A. N. Fitch,A. C. Mclaughlin###
(997307, 997307)
 A variable temperature neutron and synchrotron diffraction study have beenperformed on the giant magnetoresistant oxypnictides LnMnAsO (Ln  La, Nd).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 2, 'K', 2],[189.0, 2, 'K', 4],[228.0, 150, 'K', 4]

Nd
###A variable temperature study of the crystal and magnetic structures of the giant magnetoresistant materials LnMnAsO (Ln = La, Nd)|N. Emery,E. J. Wildman,J. M. S. Skakle,R. I. Smith,A. N. Fitch,A. C. Mclaughlin###
(997310, 997310)
 A variable temperature neutron and synchrotron diffraction study have beenperformed on the giant magnetoresistant oxypnictides LnMnAsO (Ln  La, Nd).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 2, 'K', 2],[186.0, 2, 'K', 4],[225.0, 150, 'K', 4]

Mn2
###A variable temperature study of the crystal and magnetic structures of the giant magnetoresistant materials LnMnAsO (Ln = La, Nd)|N. Emery,E. J. Wildman,J. M. S. Skakle,R. I. Smith,A. N. Fitch,A. C. Mclaughlin###
(997348, 997349)
 Thelow temperature magnetic structures have been studied and results show a spinreorientation of the Mn2 spins below T<missing VAR>N (Nd) for NdMnAsO.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 2, 'K', 1],[147.0, 2, 'K', 3],[186.0, 150, 'K', 3]

N
###A variable temperature study of the crystal and magnetic structures of the giant magnetoresistant materials LnMnAsO (Ln = La, Nd)|N. Emery,E. J. Wildman,J. M. S. Skakle,R. I. Smith,A. N. Fitch,A. C. Mclaughlin###
(997356, 997356)
 Thelow temperature magnetic structures have been studied and results show a spinreorientation of the Mn2 spins below T<missing VAR>N (Nd) for NdMnAsO.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 2, 'K', 1],[140.0, 2, 'K', 3],[179.0, 150, 'K', 3]

(Nd)
###A variable temperature study of the crystal and magnetic structures of the giant magnetoresistant materials LnMnAsO (Ln = La, Nd)|N. Emery,E. J. Wildman,J. M. S. Skakle,R. I. Smith,A. N. Fitch,A. C. Mclaughlin###
(997358, 997360)
 Thelow temperature magnetic structures have been studied and results show a spinreorientation of the Mn2 spins below T<missing VAR>N (Nd) for NdMnAsO.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 2, 'K', 1],[136.0, 2, 'K', 3],[175.0, 150, 'K', 3]

NdMnAsO
###A variable temperature study of the crystal and magnetic structures of the giant magnetoresistant materials LnMnAsO (Ln = La, Nd)|N. Emery,E. J. Wildman,J. M. S. Skakle,R. I. Smith,A. N. Fitch,A. C. Mclaughlin###
(997364, 997367)
 Thelow temperature magnetic structures have been studied and results show a spinreorientation of the Mn2 spins below T<missing VAR>N (Nd) for NdMnAsO.
Featurization terminated normally.
0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 2, 'K', 1],[129.0, 2, 'K', 3],[168.0, 150, 'K', 3]

Mn2
###A variable temperature study of the crystal and magnetic structures of the giant magnetoresistant materials LnMnAsO (Ln = La, Nd)|N. Emery,E. J. Wildman,J. M. S. Skakle,R. I. Smith,A. N. Fitch,A. C. Mclaughlin###
(997372, 997373)
 The Mn2 spinsrotate from alignment along c<missing VAR> to alignment into the basal plane and the Mn2and Nd3 moments refine to 3.54(4) mu B and 1.93(4) mu B respectively at 2 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 2, 'K', 0],[123.0, 2, 'K', 2],[162.0, 150, 'K', 2]

Mn2
###A variable temperature study of the crystal and magnetic structures of the giant magnetoresistant materials LnMnAsO (Ln = La, Nd)|N. Emery,E. J. Wildman,J. M. S. Skakle,R. I. Smith,A. N. Fitch,A. C. Mclaughlin###
(997404, 997405)
 The Mn2 spinsrotate from alignment along c<missing VAR> to alignment into the basal plane and the Mn2and Nd3 moments refine to 3.54(4) mu B and 1.93(4) mu B respectively at 2 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 2, 'K', 0],[91.0, 2, 'K', 2],[130.0, 150, 'K', 2]

Nd3
###A variable temperature study of the crystal and magnetic structures of the giant magnetoresistant materials LnMnAsO (Ln = La, Nd)|N. Emery,E. J. Wildman,J. M. S. Skakle,R. I. Smith,A. N. Fitch,A. C. Mclaughlin###
(997410, 997411)
 The Mn2 spinsrotate from alignment along c<missing VAR> to alignment into the basal plane and the Mn2and Nd3 moments refine to 3.54(4) mu B and 1.93(4) mu B respectively at 2 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 2, 'K', 0],[85.0, 2, 'K', 2],[124.0, 150, 'K', 2]

B
###A variable temperature study of the crystal and magnetic structures of the giant magnetoresistant materials LnMnAsO (Ln = La, Nd)|N. Emery,E. J. Wildman,J. M. S. Skakle,R. I. Smith,A. N. Fitch,A. C. Mclaughlin###
(997426, 997426)
 The Mn2 spinsrotate from alignment along c<missing VAR> to alignment into the basal plane and the Mn2and Nd3 moments refine to 3.54(4) mu B and 1.93(4) mu B respectively at 2 K.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 2, 'K', 0],[70.0, 2, 'K', 2],[109.0, 150, 'K', 2]

B
###A variable temperature study of the crystal and magnetic structures of the giant magnetoresistant materials LnMnAsO (Ln = La, Nd)|N. Emery,E. J. Wildman,J. M. S. Skakle,R. I. Smith,A. N. Fitch,A. C. Mclaughlin###
(997437, 997437)
 The Mn2 spinsrotate from alignment along c<missing VAR> to alignment into the basal plane and the Mn2and Nd3 moments refine to 3.54(4) mu B and 1.93(4) mu B respectively at 2 K.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 2, 'K', 0],[59.0, 2, 'K', 2],[98.0, 150, 'K', 2]

In
###A variable temperature study of the crystal and magnetic structures of the giant magnetoresistant materials LnMnAsO (Ln = La, Nd)|N. Emery,E. J. Wildman,J. M. S. Skakle,R. I. Smith,A. N. Fitch,A. C. Mclaughlin###
(997446, 997446)
In contrast there is no change in magnetic structure with temperature forLaMnAsO.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 2, 'K', 1],[50.0, 2, 'K', 1],[89.0, 150, 'K', 1]

LaMnAsO
###A variable temperature study of the crystal and magnetic structures of the giant magnetoresistant materials LnMnAsO (Ln = La, Nd)|N. Emery,E. J. Wildman,J. M. S. Skakle,R. I. Smith,A. N. Fitch,A. C. Mclaughlin###
(997471, 997474)
In contrast there is no change in magnetic structure with temperature forLaMnAsO.
Featurization terminated normally.
0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 2, 'K', 1],[22.0, 2, 'K', 1],[61.0, 150, 'K', 1]

O
###A variable temperature study of the crystal and magnetic structures of the giant magnetoresistant materials LnMnAsO (Ln = La, Nd)|N. Emery,E. J. Wildman,J. M. S. Skakle,R. I. Smith,A. N. Fitch,A. C. Mclaughlin###
(997515, 997515)
 There is no evidence of a structural transition down to 2 K, howeverdiscontinuities in the cell volume, Ln-O and Mn-As bond lengths are detected atsim 150 K for both materials.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 2, 'K', 2],[19.0, 2, 'K', 0],[20.0, 150, 'K', 0]

Mn
###A variable temperature study of the crystal and magnetic structures of the giant magnetoresistant materials LnMnAsO (Ln = La, Nd)|N. Emery,E. J. Wildman,J. M. S. Skakle,R. I. Smith,A. N. Fitch,A. C. Mclaughlin###
(997519, 997519)
 There is no evidence of a structural transition down to 2 K, howeverdiscontinuities in the cell volume, Ln-O and Mn-As bond lengths are detected atsim 150 K for both materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 2, 'K', 2],[23.0, 2, 'K', 0],[16.0, 150, 'K', 0]

As
###A variable temperature study of the crystal and magnetic structures of the giant magnetoresistant materials LnMnAsO (Ln = La, Nd)|N. Emery,E. J. Wildman,J. M. S. Skakle,R. I. Smith,A. N. Fitch,A. C. Mclaughlin###
(997521, 997521)
 There is no evidence of a structural transition down to 2 K, howeverdiscontinuities in the cell volume, Ln-O and Mn-As bond lengths are detected atsim 150 K for both materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 2, 'K', 2],[25.0, 2, 'K', 0],[14.0, 150, 'K', 0]

S
###A MuSR study of the magnetoresistive ruthenocuprates RuSr2Nd1.8-xY0.2CexCu2O_{10-δ} (x = 0.95 and 0.80)|A. C. Mclaughlin,J. P. Attfield,J. Van Duijn,A. D. Hillier###
(997598, 997598)
A MuSR<missing VAR> study of the magnetoresistive ruthenocuprates RuSr2Nd1.8-xY0.2CexCu2O10- (x<missing VAR>  0.95 and 0.80).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 0.95, 'and', 0],[114.0, 0.95, ',', 1],[323.0, 4, 'K', 6]

RuSr2Nd1.8-xY0.2
###A MuSR study of the magnetoresistive ruthenocuprates RuSr2Nd1.8-xY0.2CexCu2O_{10-δ} (x = 0.95 and 0.80)|A. C. Mclaughlin,J. P. Attfield,J. Van Duijn,A. D. Hillier###
(997611, 997619)
A MuSR<missing VAR> study of the magnetoresistive ruthenocuprates RuSr2Nd1.8-xY0.2CexCu2O10- (x<missing VAR>  0.95 and 0.80).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[11.0, 0.95, 'and', 0],[93.0, 0.95, ',', 1],[302.0, 4, 'K', 6]

Cu2O10
###A MuSR study of the magnetoresistive ruthenocuprates RuSr2Nd1.8-xY0.2CexCu2O_{10-δ} (x = 0.95 and 0.80)|A. C. Mclaughlin,J. P. Attfield,J. Van Duijn,A. D. Hillier###
(997621, 997624)
A MuSR<missing VAR> study of the magnetoresistive ruthenocuprates RuSr2Nd1.8-xY0.2CexCu2O10- (x<missing VAR>  0.95 and 0.80).
Featurization terminated normally.
0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 0.95, 'and', 0],[88.0, 0.95, ',', 1],[297.0, 4, 'K', 6]

F
###A MuSR study of the magnetoresistive ruthenocuprates RuSr2Nd1.8-xY0.2CexCu2O_{10-δ} (x = 0.95 and 0.80)|A. C. Mclaughlin,J. P. Attfield,J. Van Duijn,A. D. Hillier###
(997648, 997648)
 Zero field muon spin relaxation (Z<missing VAR>F-muSR) has been used to study themagnetic properties of the underdoped giant magnetoresistive ruthenocuprates(GMR) RuSr2Nd1.8-xY0.2CexCu2O10-d (x<missing VAR>  0.95, 0.80).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 0.95, 'and', 1],[64.0, 0.95, ',', 0],[273.0, 4, 'K', 5]

S
###A MuSR study of the magnetoresistive ruthenocuprates RuSr2Nd1.8-xY0.2CexCu2O_{10-δ} (x = 0.95 and 0.80)|A. C. Mclaughlin,J. P. Attfield,J. Van Duijn,A. D. Hillier###
(997651, 997651)
 Zero field muon spin relaxation (Z<missing VAR>F-muSR) has been used to study themagnetic properties of the underdoped giant magnetoresistive ruthenocuprates(GMR) RuSr2Nd1.8-xY0.2CexCu2O10-d (x<missing VAR>  0.95, 0.80).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 0.95, 'and', 1],[61.0, 0.95, ',', 0],[270.0, 4, 'K', 5]

RuSr2Nd1.8-xY0.2
###A MuSR study of the magnetoresistive ruthenocuprates RuSr2Nd1.8-xY0.2CexCu2O_{10-δ} (x = 0.95 and 0.80)|A. C. Mclaughlin,J. P. Attfield,J. Van Duijn,A. D. Hillier###
(997691, 997699)
 Zero field muon spin relaxation (Z<missing VAR>F-muSR) has been used to study themagnetic properties of the underdoped giant magnetoresistive ruthenocuprates(GMR) RuSr2Nd1.8-xY0.2CexCu2O10-d (x<missing VAR>  0.95, 0.80).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[61.0, 0.95, 'and', 1],[13.0, 0.95, ',', 0],[222.0, 4, 'K', 5]

Cu2O10-d
###A MuSR study of the magnetoresistive ruthenocuprates RuSr2Nd1.8-xY0.2CexCu2O_{10-δ} (x = 0.95 and 0.80)|A. C. Mclaughlin,J. P. Attfield,J. Van Duijn,A. D. Hillier###
(997701, 997706)
 Zero field muon spin relaxation (Z<missing VAR>F-muSR) has been used to study themagnetic properties of the underdoped giant magnetoresistive ruthenocuprates(GMR) RuSr2Nd1.8-xY0.2CexCu2O10-d (x<missing VAR>  0.95, 0.80).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[71.0, 0.95, 'and', 1],[6.0, 0.95, ',', 0],[215.0, 4, 'K', 5]

Ru
###A MuSR study of the magnetoresistive ruthenocuprates RuSr2Nd1.8-xY0.2CexCu2O_{10-δ} (x = 0.95 and 0.80)|A. C. Mclaughlin,J. P. Attfield,J. Van Duijn,A. D. Hillier###
(997755, 997755)
 The results show a gradualloss of initial asymmetry A0 at the ruthenium spin transition temperature, T<missing VAR>Ru.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 0.95, 'and', 2],[43.0, 0.95, ',', 1],[166.0, 4, 'K', 4]

At
###A MuSR study of the magnetoresistive ruthenocuprates RuSr2Nd1.8-xY0.2CexCu2O_{10-δ} (x = 0.95 and 0.80)|A. C. Mclaughlin,J. P. Attfield,J. Van Duijn,A. D. Hillier###
(997759, 997759)
At the same time the electronic relaxation rate, lambda shows a gradualincrease with decreasing temperature below T<missing VAR>Ru.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 0.95, 'and', 3],[47.0, 0.95, ',', 2],[162.0, 4, 'K', 3]

Ru
###A MuSR study of the magnetoresistive ruthenocuprates RuSr2Nd1.8-xY0.2CexCu2O_{10-δ} (x = 0.95 and 0.80)|A. C. Mclaughlin,J. P. Attfield,J. Van Duijn,A. D. Hillier###
(997796, 997796)
At the same time the electronic relaxation rate, lambda shows a gradualincrease with decreasing temperature below T<missing VAR>Ru.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 0.95, 'and', 3],[84.0, 0.95, ',', 2],[125.0, 4, 'K', 3]

Cu
###A MuSR study of the magnetoresistive ruthenocuprates RuSr2Nd1.8-xY0.2CexCu2O_{10-δ} (x = 0.95 and 0.80)|A. C. Mclaughlin,J. P. Attfield,J. Van Duijn,A. D. Hillier###
(997816, 997816)
 These results have beeninterpreted as evidence for Cu spin cluster formation below T<missing VAR>Ru.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, 0.95, 'and', 4],[104.0, 0.95, ',', 3],[105.0, 4, 'K', 2]

Ru
###A MuSR study of the magnetoresistive ruthenocuprates RuSr2Nd1.8-xY0.2CexCu2O_{10-δ} (x = 0.95 and 0.80)|A. C. Mclaughlin,J. P. Attfield,J. Van Duijn,A. D. Hillier###
(997827, 997827)
 These results have beeninterpreted as evidence for Cu spin cluster formation below T<missing VAR>Ru.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[197.0, 0.95, 'and', 4],[115.0, 0.95, ',', 3],[94.0, 4, 'K', 2]

Ru
###A MuSR study of the magnetoresistive ruthenocuprates RuSr2Nd1.8-xY0.2CexCu2O_{10-δ} (x = 0.95 and 0.80)|A. C. Mclaughlin,J. P. Attfield,J. Van Duijn,A. D. Hillier###
(997918, 997918)
 GMR is observed over a widetemperature range in the materials studied and the magnitude increases as thetemperature is reduced from T<missing VAR>Ru to 4 K which suggests a relation between Cuspin cluster size and -MR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[288.0, 0.95, 'and', 6],[206.0, 0.95, ',', 5],[3.0, 4, 'K', 0]

Cu
###A MuSR study of the magnetoresistive ruthenocuprates RuSr2Nd1.8-xY0.2CexCu2O_{10-δ} (x = 0.95 and 0.80)|A. C. Mclaughlin,J. P. Attfield,J. Van Duijn,A. D. Hillier###
(997933, 997933)
 GMR is observed over a widetemperature range in the materials studied and the magnitude increases as thetemperature is reduced from T<missing VAR>Ru to 4 K which suggests a relation between Cuspin cluster size and -MR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[303.0, 0.95, 'and', 6],[221.0, 0.95, ',', 5],[12.0, 4, 'K', 0]

In
###Negative differential magneto-resistance in ferromagnetic wires with domain walls|Nicholas Sedlmayr,Jamal Berakdar###
(998082, 998082)
 In turn, this oscillatory motion of the domain wall can coupleresonantly with the electrons in the system affecting the transport propertiesfurther.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ba
###Suppression of backward scattering of Dirac fermions in iron pnictides Ba(Fe$_{1-x}$Ru$_x$As)$_2$|Y. Tanabe,K. K. Huynh,T. Urata,S. Heguri,G. Mu,J. T. Xu,R. Nouchi,K. Tanigaki###
(998576, 998576)
Suppression of backward scattering of Dirac fermions in iron pnictides Ba(Fe1-xRux<missing VAR>As)2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe1-xRu
###Suppression of backward scattering of Dirac fermions in iron pnictides Ba(Fe$_{1-x}$Ru$_x$As)$_2$|Y. Tanabe,K. K. Huynh,T. Urata,S. Heguri,G. Mu,J. T. Xu,R. Nouchi,K. Tanigaki###
(998578, 998582)
Suppression of backward scattering of Dirac fermions in iron pnictides Ba(Fe1-xRux<missing VAR>As)2.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

As
###Suppression of backward scattering of Dirac fermions in iron pnictides Ba(Fe$_{1-x}$Ru$_x$As)$_2$|Y. Tanabe,K. K. Huynh,T. Urata,S. Heguri,G. Mu,J. T. Xu,R. Nouchi,K. Tanigaki###
(998584, 998584)
Suppression of backward scattering of Dirac fermions in iron pnictides Ba(Fe1-xRux<missing VAR>As)2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Suppression of backward scattering of Dirac fermions in iron pnictides Ba(Fe$_{1-x}$Ru$_x$As)$_2$|Y. Tanabe,K. K. Huynh,T. Urata,S. Heguri,G. Mu,J. T. Xu,R. Nouchi,K. Tanigaki###
(998605, 998605)
 We report electronic transport of Dirac cones when Fe is replaced by Ru,which has an isoelectronic electron configuration to Fe, using single crystalsof Ba(Fe1-xRux<missing VAR>As)2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ru
###Suppression of backward scattering of Dirac fermions in iron pnictides Ba(Fe$_{1-x}$Ru$_x$As)$_2$|Y. Tanabe,K. K. Huynh,T. Urata,S. Heguri,G. Mu,J. T. Xu,R. Nouchi,K. Tanigaki###
(998613, 998613)
 We report electronic transport of Dirac cones when Fe is replaced by Ru,which has an isoelectronic electron configuration to Fe, using single crystalsof Ba(Fe1-xRux<missing VAR>As)2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Suppression of backward scattering of Dirac fermions in iron pnictides Ba(Fe$_{1-x}$Ru$_x$As)$_2$|Y. Tanabe,K. K. Huynh,T. Urata,S. Heguri,G. Mu,J. T. Xu,R. Nouchi,K. Tanigaki###
(998631, 998631)
 We report electronic transport of Dirac cones when Fe is replaced by Ru,which has an isoelectronic electron configuration to Fe, using single crystalsof Ba(Fe1-xRux<missing VAR>As)2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ba
###Suppression of backward scattering of Dirac fermions in iron pnictides Ba(Fe$_{1-x}$Ru$_x$As)$_2$|Y. Tanabe,K. K. Huynh,T. Urata,S. Heguri,G. Mu,J. T. Xu,R. Nouchi,K. Tanigaki###
(998643, 998643)
 We report electronic transport of Dirac cones when Fe is replaced by Ru,which has an isoelectronic electron configuration to Fe, using single crystalsof Ba(Fe1-xRux<missing VAR>As)2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe1-xRu
###Suppression of backward scattering of Dirac fermions in iron pnictides Ba(Fe$_{1-x}$Ru$_x$As)$_2$|Y. Tanabe,K. K. Huynh,T. Urata,S. Heguri,G. Mu,J. T. Xu,R. Nouchi,K. Tanigaki###
(998645, 998649)
 We report electronic transport of Dirac cones when Fe is replaced by Ru,which has an isoelectronic electron configuration to Fe, using single crystalsof Ba(Fe1-xRux<missing VAR>As)2.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

As
###Suppression of backward scattering of Dirac fermions in iron pnictides Ba(Fe$_{1-x}$Ru$_x$As)$_2$|Y. Tanabe,K. K. Huynh,T. Urata,S. Heguri,G. Mu,J. T. Xu,R. Nouchi,K. Tanigaki###
(998651, 998651)
 We report electronic transport of Dirac cones when Fe is replaced by Ru,which has an isoelectronic electron configuration to Fe, using single crystalsof Ba(Fe1-xRux<missing VAR>As)2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ru
###Suppression of backward scattering of Dirac fermions in iron pnictides Ba(Fe$_{1-x}$Ru$_x$As)$_2$|Y. Tanabe,K. K. Huynh,T. Urata,S. Heguri,G. Mu,J. T. Xu,R. Nouchi,K. Tanigaki###
(998706, 998706)
 The electronic transport of parabolic bands isshown to be suppressed by scattering due to the crystal lattice distortion andthe impurity effect of Ru, while that of the Dirac cone is not significantlyreduced due to the intrinsic character of Dirac cones.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ru
###Suppression of backward scattering of Dirac fermions in iron pnictides Ba(Fe$_{1-x}$Ru$_x$As)$_2$|Y. Tanabe,K. K. Huynh,T. Urata,S. Heguri,G. Mu,J. T. Xu,R. Nouchi,K. Tanigaki###
(998855, 998855)
 Scattering of Ru on the Diraccones is discussed in terms of the estimated mean free path using experimentalparameters.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

KNi2Se2
###Mixed-Valence-Driven Heavy-Fermion Behavior and Superconductivity in KNi$_2$Se$_2$|James R. Neilson,Anna Llobet,Andreas V. Stier,Liang Wu,Jiajia Wen,Jing Tao,Yimei Zhu,Zlatko B. Tesanovic,N. P. Armitage,Tyrel M. McQueen###
(998920, 998924)
Mixed-Valence-Driven Heavy-Fermion Behavior and Superconductivity in KNi2Se2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 20, 'K', 1]

KNi2Se2
###Mixed-Valence-Driven Heavy-Fermion Behavior and Superconductivity in KNi$_2$Se$_2$|James R. Neilson,Anna Llobet,Andreas V. Stier,Liang Wu,Jiajia Wen,Jing Tao,Yimei Zhu,Zlatko B. Tesanovic,N. P. Armitage,Tyrel M. McQueen###
(998968, 998972)
 Based on specific heat and magnetoresistance measurements, we report that aheavy electronic state exists below T<missing VAR> approx 20 K in KNi2Se2, withan increased carrier mobility and enhanced effective electronic band mass, m<missing VAR> 6mb to 18mb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 20, 'K', 0]

K
###Mixed-Valence-Driven Heavy-Fermion Behavior and Superconductivity in KNi$_2$Se$_2$|James R. Neilson,Anna Llobet,Andreas V. Stier,Liang Wu,Jiajia Wen,Jing Tao,Yimei Zhu,Zlatko B. Tesanovic,N. P. Armitage,Tyrel M. McQueen###
(999038, 999038)
 This heavy state evolves into superconductivity at Tc 0.80(1) K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 20, 'K', 1]

KNi2Se2
###Mixed-Valence-Driven Heavy-Fermion Behavior and Superconductivity in KNi$_2$Se$_2$|James R. Neilson,Anna Llobet,Andreas V. Stier,Liang Wu,Jiajia Wen,Jing Tao,Yimei Zhu,Zlatko B. Tesanovic,N. P. Armitage,Tyrel M. McQueen###
(999117, 999121)
 Yet, no evidence for localized magnetism or magneticorder is found in KNi2Se2 from magnetization measurements or neutrondiffraction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 20, 'K', 3]

KNi2Se2
###Mixed-Valence-Driven Heavy-Fermion Behavior and Superconductivity in KNi$_2$Se$_2$|James R. Neilson,Anna Llobet,Andreas V. Stier,Liang Wu,Jiajia Wen,Jing Tao,Yimei Zhu,Zlatko B. Tesanovic,N. P. Armitage,Tyrel M. McQueen###
(999213, 999217)
 Instead, neutron pair-distribution-function analysis reveals thepresence of local charge-density-wave distortions that disappear on cooling, aneffect opposite to what is typically observed, suggesting that thelow-temperature electronic state of KNi2Se2 arises from cooperativeCoulomb interactions and proximity to, but avoidance of, charge order.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[249.0, 20, 'K', 4]

At
###Edge state transport through disordered graphene nanoribbons in the quantum Hall regime|Fabian Duerr,Jeroen B. Oostinga,Charles Gould,Laurens W. Molenkamp###
(999384, 999384)
 At B 11 T, quantum Hall plateaux appear at sigmaxypm2e<missing VAR>2/h<missing VAR>,pm6e<missing VAR>2/h<missing VAR> and pm10e<missing VAR>2/h<missing VAR>, for which the Landau level spacing is larger thanthe Landau level broadening.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 11, 'T', 0]

B
###Edge state transport through disordered graphene nanoribbons in the quantum Hall regime|Fabian Duerr,Jeroen B. Oostinga,Charles Gould,Laurens W. Molenkamp###
(999386, 999386)
 At B 11 T, quantum Hall plateaux appear at sigmaxypm2e<missing VAR>2/h<missing VAR>,pm6e<missing VAR>2/h<missing VAR> and pm10e<missing VAR>2/h<missing VAR>, for which the Landau level spacing is larger thanthe Landau level broadening.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[1.0, 11, 'T', 0]

At
###Edge state transport through disordered graphene nanoribbons in the quantum Hall regime|Fabian Duerr,Jeroen B. Oostinga,Charles Gould,Laurens W. Molenkamp###
(999533, 999533)
 At high charge densities, the longitudinal and Hallresistance exhibit reproducible fluctuations, which are most pronounced at thetransition regions between Hall plateaux.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 11, 'T', 2]

K
###Self-sustaining dynamical nuclear polarization oscillations in quantum dots|M. S. Rudner,L. S. Levitov###
(999715, 999715)
 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 92, ',', 5]

S
###Self-sustaining dynamical nuclear polarization oscillations in quantum dots|M. S. Rudner,L. S. Levitov###
(999721, 999721)
 Ono, S.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 92, ',', 4]

In
###Quantum oscillations from a two-dimensional electron gas at a Mott/band insulator interface|Pouya Moetakef,Daniel G. Ouellette,James R. Williams,S. James Allen,Leon Balents,David Goldhaber-Gordon,Susanne Stemmer###
(1000158, 1000158)
 In either case, the electron system that gives rise to theoscillations represents only a fraction of the electrons in the space chargelayer at the interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 360, 'mK', 3],[71.0, 10, 'K', 3],[87.0, 1, 'me', 1]

SrTiO3
###Quantum oscillations from a two-dimensional electron gas at a Mott/band insulator interface|Pouya Moetakef,Daniel G. Ouellette,James R. Williams,S. James Allen,Leon Balents,David Goldhaber-Gordon,Susanne Stemmer###
(1000301, 1000304)
 The results arediscussed in the context of the t2g-states that form the bottom of theconduction band of SrTiO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[217.0, 360, 'mK', 5],[214.0, 10, 'K', 5],[56.0, 1, 'me', 1]

Mn2CoAl
###Realization of spin gapless semiconductors: the Heusler compound Mn2CoAl|Siham Ouardi,Gerhard H. Fecher,Jürgen Kübler,Claudia Felser###
(1000331, 1000334)
Realization of spin gapless semiconductors the Heusler compound Mn2CoAl.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[196.0, 720, 'K', 4],[200.0, 300, 'K', 5]

Mn2CoAl
###Realization of spin gapless semiconductors: the Heusler compound Mn2CoAl|Siham Ouardi,Gerhard H. Fecher,Jürgen Kübler,Claudia Felser###
(1000467, 1000470)
 Here, a theoretical and experimental study of the spin gaplessHeusler compound Mn2CoAl is presented.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 720, 'K', 1],[64.0, 300, 'K', 2]

Mn2CoAl
###Realization of spin gapless semiconductors: the Heusler compound Mn2CoAl|Siham Ouardi,Gerhard H. Fecher,Jürgen Kübler,Claudia Felser###
(1000485, 1000488)
 It turns out that Mn2CoAl is a verypeculiar ferrimagnetic semiconductor with a magnetic moment of 2 muB and ahigh Curie temperature of 720 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 720, 'K', 0],[46.0, 300, 'K', 1]

B
###Realization of spin gapless semiconductors: the Heusler compound Mn2CoAl|Siham Ouardi,Gerhard H. Fecher,Jürgen Kübler,Claudia Felser###
(1000516, 1000516)
 It turns out that Mn2CoAl is a verypeculiar ferrimagnetic semiconductor with a magnetic moment of 2 muB and ahigh Curie temperature of 720 K.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 720, 'K', 0],[18.0, 300, 'K', 1]

In
###Realization of spin gapless semiconductors: the Heusler compound Mn2CoAl|Siham Ouardi,Gerhard H. Fecher,Jürgen Kübler,Claudia Felser###
(1000593, 1000593)
 In high fields, it is positive andnon-saturating at low temperatures, but negative and saturating at hightemperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 720, 'K', 3],[59.0, 300, 'K', 2]

NaFeAs
###The distinct in-plane resistivity anisotropy in the nematic states of detwinned NaFeAs and FeTe single crystals: evidences for Hund's rule metal|Juan Jiang,C. He,Y. Zhang,M. Xu,Q. Q. Ge,Z. R. Ye,F. Chen,B. P. Xie,D. L. Feng###
(1000718, 1000720)
The distinct in-plane resistivity anisotropy in the nematic states of detwinned NaFeAs and FeTe single crystals evidences for Hunds<missing VAR> rule metal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeTe
###The distinct in-plane resistivity anisotropy in the nematic states of detwinned NaFeAs and FeTe single crystals: evidences for Hund's rule metal|Juan Jiang,C. He,Y. Zhang,M. Xu,Q. Q. Ge,Z. R. Ye,F. Chen,B. P. Xie,D. L. Feng###
(1000724, 1000725)
The distinct in-plane resistivity anisotropy in the nematic states of detwinned NaFeAs and FeTe single crystals evidences for Hunds<missing VAR> rule metal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NaFeAs
###The distinct in-plane resistivity anisotropy in the nematic states of detwinned NaFeAs and FeTe single crystals: evidences for Hund's rule metal|Juan Jiang,C. He,Y. Zhang,M. Xu,Q. Q. Ge,Z. R. Ye,F. Chen,B. P. Xie,D. L. Feng###
(1000790, 1000792)
 The in-plane resistivity anisotropy has been studied with the Montgomerymethod on two detwinned parent compounds of the iron-based superconductors,NaFeAs and FeTe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeTe
###The distinct in-plane resistivity anisotropy in the nematic states of detwinned NaFeAs and FeTe single crystals: evidences for Hund's rule metal|Juan Jiang,C. He,Y. Zhang,M. Xu,Q. Q. Ge,Z. R. Ye,F. Chen,B. P. Xie,D. L. Feng###
(1000796, 1000797)
 The in-plane resistivity anisotropy has been studied with the Montgomerymethod on two detwinned parent compounds of the iron-based superconductors,NaFeAs and FeTe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NaFeAs
###The distinct in-plane resistivity anisotropy in the nematic states of detwinned NaFeAs and FeTe single crystals: evidences for Hund's rule metal|Juan Jiang,C. He,Y. Zhang,M. Xu,Q. Q. Ge,Z. R. Ye,F. Chen,B. P. Xie,D. L. Feng###
(1000802, 1000804)
 For NaFeAs, the resistivity in the antiferromagnetic (AFM)direction is smaller than that in the ferromagnetic (FM) direction, similar tothat observed in BaFe2As2 before.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###The distinct in-plane resistivity anisotropy in the nematic states of detwinned NaFeAs and FeTe single crystals: evidences for Hund's rule metal|Juan Jiang,C. He,Y. Zhang,M. Xu,Q. Q. Ge,Z. R. Ye,F. Chen,B. P. Xie,D. L. Feng###
(1000819, 1000819)
 For NaFeAs, the resistivity in the antiferromagnetic (AFM)direction is smaller than that in the ferromagnetic (FM) direction, similar tothat observed in BaFe2As2 before.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###The distinct in-plane resistivity anisotropy in the nematic states of detwinned NaFeAs and FeTe single crystals: evidences for Hund's rule metal|Juan Jiang,C. He,Y. Zhang,M. Xu,Q. Q. Ge,Z. R. Ye,F. Chen,B. P. Xie,D. L. Feng###
(1000841, 1000841)
 For NaFeAs, the resistivity in the antiferromagnetic (AFM)direction is smaller than that in the ferromagnetic (FM) direction, similar tothat observed in BaFe2As2 before.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BaFe2As2
###The distinct in-plane resistivity anisotropy in the nematic states of detwinned NaFeAs and FeTe single crystals: evidences for Hund's rule metal|Juan Jiang,C. He,Y. Zhang,M. Xu,Q. Q. Ge,Z. R. Ye,F. Chen,B. P. Xie,D. L. Feng###
(1000859, 1000863)
 For NaFeAs, the resistivity in the antiferromagnetic (AFM)direction is smaller than that in the ferromagnetic (FM) direction, similar tothat observed in BaFe2As2 before.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeTe
###The distinct in-plane resistivity anisotropy in the nematic states of detwinned NaFeAs and FeTe single crystals: evidences for Hund's rule metal|Juan Jiang,C. He,Y. Zhang,M. Xu,Q. Q. Ge,Z. R. Ye,F. Chen,B. P. Xie,D. L. Feng###
(1000872, 1000873)
 While for FeTe, the resistivity in the AFM<missing VAR>direction is larger than that in the FM<missing VAR> direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###The distinct in-plane resistivity anisotropy in the nematic states of detwinned NaFeAs and FeTe single crystals: evidences for Hund's rule metal|Juan Jiang,C. He,Y. Zhang,M. Xu,Q. Q. Ge,Z. R. Ye,F. Chen,B. P. Xie,D. L. Feng###
(1000885, 1000885)
 While for FeTe, the resistivity in the AFM<missing VAR>direction is larger than that in the FM<missing VAR> direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###The distinct in-plane resistivity anisotropy in the nematic states of detwinned NaFeAs and FeTe single crystals: evidences for Hund's rule metal|Juan Jiang,C. He,Y. Zhang,M. Xu,Q. Q. Ge,Z. R. Ye,F. Chen,B. P. Xie,D. L. Feng###
(1000903, 1000903)
 While for FeTe, the resistivity in the AFM<missing VAR>direction is larger than that in the FM<missing VAR> direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeTe
###The distinct in-plane resistivity anisotropy in the nematic states of detwinned NaFeAs and FeTe single crystals: evidences for Hund's rule metal|Juan Jiang,C. He,Y. Zhang,M. Xu,Q. Q. Ge,Z. R. Ye,F. Chen,B. P. Xie,D. L. Feng###
(1001003, 1001004)
 We show that these twoopposite resistivity anisotropy behaviors could be attributed to the strongHunds<missing VAR> rule coupling effects while the iron pnictides are in the itinerantregime, where the Hunds<missing VAR> rule coupling causes strong reconstruction andnematicity of the electronic structure; the FeTe is in the localized regime,where Hunds<missing VAR> rule coupling makes hopping along the FM<missing VAR> direction easier thanalong the AFMdirection, similar to the colossal magnetoresistance observed insome manganites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###The distinct in-plane resistivity anisotropy in the nematic states of detwinned NaFeAs and FeTe single crystals: evidences for Hund's rule metal|Juan Jiang,C. He,Y. Zhang,M. Xu,Q. Q. Ge,Z. R. Ye,F. Chen,B. P. Xie,D. L. Feng###
(1001035, 1001035)
 We show that these twoopposite resistivity anisotropy behaviors could be attributed to the strongHunds<missing VAR> rule coupling effects while the iron pnictides are in the itinerantregime, where the Hunds<missing VAR> rule coupling causes strong reconstruction andnematicity of the electronic structure; the FeTe is in the localized regime,where Hunds<missing VAR> rule coupling makes hopping along the FM<missing VAR> direction easier thanalong the AFMdirection, similar to the colossal magnetoresistance observed insome manganites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###The distinct in-plane resistivity anisotropy in the nematic states of detwinned NaFeAs and FeTe single crystals: evidences for Hund's rule metal|Juan Jiang,C. He,Y. Zhang,M. Xu,Q. Q. Ge,Z. R. Ye,F. Chen,B. P. Xie,D. L. Feng###
(1001050, 1001050)
 We show that these twoopposite resistivity anisotropy behaviors could be attributed to the strongHunds<missing VAR> rule coupling effects while the iron pnictides are in the itinerantregime, where the Hunds<missing VAR> rule coupling causes strong reconstruction andnematicity of the electronic structure; the FeTe is in the localized regime,where Hunds<missing VAR> rule coupling makes hopping along the FM<missing VAR> direction easier thanalong the AFMdirection, similar to the colossal magnetoresistance observed insome manganites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SiC
###Magnetotransport in graphene on silicon side of SiC|P. Vasek,L. Smrcka,P. Svoboda,V. Jurka,M. Orlita,D. K. Maude,W. Strupinski,R. Stepniewski,R. Yakimova###
(1001096, 1001097)
Magnetotransport in graphene on silicon side of SiC.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 4, 'and', 3],[87.0, 100, 'K', 3],[105.0, 22, 'T', 3]

SiC
###Magnetotransport in graphene on silicon side of SiC|P. Vasek,L. Smrcka,P. Svoboda,V. Jurka,M. Orlita,D. K. Maude,W. Strupinski,R. Stepniewski,R. Yakimova###
(1001127, 1001128)
 We have studied the transport properties of graphene grown on silicon side ofSiC.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 4, 'and', 2],[56.0, 100, 'K', 2],[74.0, 22, 'T', 2]

In
###Magnetotransport in graphene on silicon side of SiC|P. Vasek,L. Smrcka,P. Svoboda,V. Jurka,M. Orlita,D. K. Maude,W. Strupinski,R. Stepniewski,R. Yakimova###
(1001205, 1001205)
 In spite of differences in sample preparation, the fielddependence of resistances measured on both sets of samples exhibits two periodsof magneto-oscillations indicating two different parallel conducting channelswith different concentrations of carriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 4, 'and', 1],[21.0, 100, 'K', 1],[3.0, 22, 'T', 1]

SiC
###Magnetotransport in graphene on silicon side of SiC|P. Vasek,L. Smrcka,P. Svoboda,V. Jurka,M. Orlita,D. K. Maude,W. Strupinski,R. Stepniewski,R. Yakimova###
(1001356, 1001357)
 The coexistence of two differentgroups of carriers on the silicon side of SiC was not reported before.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 4, 'and', 3],[172.0, 100, 'K', 3],[154.0, 22, 'T', 3]

Mn2VGa
###Negative spin polarization of Mn2VGa probed by tunnel magnetoresistance|Christoph Klewe,Markus Meinert,Jan Schmalhorst,Günter Reiss###
(1001384, 1001387)
Negative spin polarization of Mn2VGa probed by tunnel magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.5,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn2VGa
###Negative spin polarization of Mn2VGa probed by tunnel magnetoresistance|Christoph Klewe,Markus Meinert,Jan Schmalhorst,Günter Reiss###
(1001406, 1001409)
 The ferrimagnetic Heusler compound Mn2VGa is predicted to have a pseudogap inthe majority spin channel, which should lead to a negative tunnelmagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.5,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn2VGa
###Negative spin polarization of Mn2VGa probed by tunnel magnetoresistance|Christoph Klewe,Markus Meinert,Jan Schmalhorst,Günter Reiss###
(1001459, 1001462)
 We synthesized epitaxial Mn2VGa thin films on MgO(001)substrates by dc and rf magnetron co-sputtering, resulting in nearlystoichiometric films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.5,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B2
###Negative spin polarization of Mn2VGa probed by tunnel magnetoresistance|Christoph Klewe,Markus Meinert,Jan Schmalhorst,Günter Reiss###
(1001518, 1001519)
 XRD analysis revealed a mostly B2-ordered structure forthe films deposited at substrate temperatures of 350degC, 450degC, and550degC.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Negative spin polarization of Mn2VGa probed by tunnel magnetoresistance|Christoph Klewe,Markus Meinert,Jan Schmalhorst,Günter Reiss###
(1001544, 1001544)
 XRD analysis revealed a mostly B2-ordered structure forthe films deposited at substrate temperatures of 350degC, 450degC, and550degC.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Negative spin polarization of Mn2VGa probed by tunnel magnetoresistance|Christoph Klewe,Markus Meinert,Jan Schmalhorst,Günter Reiss###
(1001549, 1001549)
 XRD analysis revealed a mostly B2-ordered structure forthe films deposited at substrate temperatures of 350degC, 450degC, and550degC.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Negative spin polarization of Mn2VGa probed by tunnel magnetoresistance|Christoph Klewe,Markus Meinert,Jan Schmalhorst,Günter Reiss###
(1001557, 1001557)
 XRD analysis revealed a mostly B2-ordered structure forthe films deposited at substrate temperatures of 350degC, 450degC, and550degC.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Negative spin polarization of Mn2VGa probed by tunnel magnetoresistance|Christoph Klewe,Markus Meinert,Jan Schmalhorst,Günter Reiss###
(1001568, 1001569)
 Magnetic tunnel junctions with MgO barrier and CoFecounter-electrodes were fabricated.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFe
###Negative spin polarization of Mn2VGa probed by tunnel magnetoresistance|Christoph Klewe,Markus Meinert,Jan Schmalhorst,Günter Reiss###
(1001575, 1001576)
 Magnetic tunnel junctions with MgO barrier and CoFecounter-electrodes were fabricated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Negative spin polarization of Mn2VGa probed by tunnel magnetoresistance|Christoph Klewe,Markus Meinert,Jan Schmalhorst,Günter Reiss###
(1001605, 1001605)
 After post-annealing at up toT<missing VAR>a425degC negative TMR was obtained around zero bias, providing evidencefor the inverted spin-polarization.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(V)
###Negative spin polarization of Mn2VGa probed by tunnel magnetoresistance|Christoph Klewe,Markus Meinert,Jan Schmalhorst,Günter Reiss###
(1001679, 1001681)
 Band structures of both electrodes werecomputed within the coherent potential approximation and used to calculate theTMR(V) characteristics, which are in good agreement with our experimentalfindings.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(B)
###Magnetoresistance of an Anderson insulator of bosons|Anirban Gangopadhyay,Victor Galitski,Markus Mueller###
(1001858, 1001860)
 The excitations become more localized withincreasing field (in sharp contrast to generic fermionic excitations which getweakly delocalized) the localization length xi(B) is found to change asxi-1(B)-xi-1(0)sim B4/5.
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(B)
###Magnetoresistance of an Anderson insulator of bosons|Anirban Gangopadhyay,Victor Galitski,Markus Mueller###
(1001876, 1001878)
 The excitations become more localized withincreasing field (in sharp contrast to generic fermionic excitations which getweakly delocalized) the localization length xi(B) is found to change asxi-1(B)-xi-1(0)sim B4/5.
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B4
###Magnetoresistance of an Anderson insulator of bosons|Anirban Gangopadhyay,Victor Galitski,Markus Mueller###
(1001888, 1001889)
 The excitations become more localized withincreasing field (in sharp contrast to generic fermionic excitations which getweakly delocalized) the localization length xi(B) is found to change asxi-1(B)-xi-1(0)sim B4/5.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(SC)
###High magnetoresistance in graphene nanoribbon heterojunction|S. Bala Kumar,M. B. A. Jalil,S. G. Tan###
(1002117, 1002120)
 We show a large magnetoresistance(MR) effect in a graphene heterostructureconsisting of an metallic(M) and semiconductor(SC)-typearmchair-graphene-nanoribbon(aGNR).
Featurization successful!
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[215.0, 100, '%', 5],[218.0, 85, '%', 5]

In
###High magnetoresistance in graphene nanoribbon heterojunction|S. Bala Kumar,M. B. A. Jalil,S. G. Tan###
(1002138, 1002138)
 In the heterostructure, the transmissionacross the first subband of the SC-aGNR and M<missing VAR>-aGNR is forbidden under zeromagnetic-field, due to the orthogonality of the wavefunctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[197.0, 100, '%', 4],[200.0, 85, '%', 4]

SC
###High magnetoresistance in graphene nanoribbon heterojunction|S. Bala Kumar,M. B. A. Jalil,S. G. Tan###
(1002162, 1002163)
 In the heterostructure, the transmissionacross the first subband of the SC-aGNR and M<missing VAR>-aGNR is forbidden under zeromagnetic-field, due to the orthogonality of the wavefunctions.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[172.0, 100, '%', 4],[175.0, 85, '%', 4]

Co2MnGe/Rh2CuSn
###Interface characterization of Co2MnGe/Rh2CuSn Heusler multilayers|Ronny Knut,Peter Svedlindh,Klas Gunnarsson,Oleg Mryasov,Peter Warnicke,Dario Arena,Matts Björck,D. D. Sarma,Anindita Sahoo,Sumanta Mukherjee,Sari Granroth,Mihaela Gorgoi,Olof Karis###
(1002367, 1002375)
Interface characterization of Co2MnGe/Rh2CuSn Heusler multilayers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Co2MnGe
###Interface characterization of Co2MnGe/Rh2CuSn Heusler multilayers|Ronny Knut,Peter Svedlindh,Klas Gunnarsson,Oleg Mryasov,Peter Warnicke,Dario Arena,Matts Björck,D. D. Sarma,Anindita Sahoo,Sumanta Mukherjee,Sari Granroth,Mihaela Gorgoi,Olof Karis###
(1002478, 1002481)
 The studied multilayers consist offerromagnetic Co2MnGe and non-magnetic Rh2CuSn layers with varyingthicknesses.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.5,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Rh2CuSn
###Interface characterization of Co2MnGe/Rh2CuSn Heusler multilayers|Ronny Knut,Peter Svedlindh,Klas Gunnarsson,Oleg Mryasov,Peter Warnicke,Dario Arena,Matts Björck,D. D. Sarma,Anindita Sahoo,Sumanta Mukherjee,Sari Granroth,Mihaela Gorgoi,Olof Karis###
(1002489, 1002492)
 The studied multilayers consist offerromagnetic Co2MnGe and non-magnetic Rh2CuSn layers with varyingthicknesses.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Interface characterization of Co2MnGe/Rh2CuSn Heusler multilayers|Ronny Knut,Peter Svedlindh,Klas Gunnarsson,Oleg Mryasov,Peter Warnicke,Dario Arena,Matts Björck,D. D. Sarma,Anindita Sahoo,Sumanta Mukherjee,Sari Granroth,Mihaela Gorgoi,Olof Karis###
(1002530, 1002530)
 We find that diffusion begins already at comparably lowtemperatures between 200 circC and 250 circC, where Mn appears tobe most prone to diffusion.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Interface characterization of Co2MnGe/Rh2CuSn Heusler multilayers|Ronny Knut,Peter Svedlindh,Klas Gunnarsson,Oleg Mryasov,Peter Warnicke,Dario Arena,Matts Björck,D. D. Sarma,Anindita Sahoo,Sumanta Mukherjee,Sari Granroth,Mihaela Gorgoi,Olof Karis###
(1002537, 1002537)
 We find that diffusion begins already at comparably lowtemperatures between 200 circC and 250 circC, where Mn appears tobe most prone to diffusion.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Interface characterization of Co2MnGe/Rh2CuSn Heusler multilayers|Ronny Knut,Peter Svedlindh,Klas Gunnarsson,Oleg Mryasov,Peter Warnicke,Dario Arena,Matts Björck,D. D. Sarma,Anindita Sahoo,Sumanta Mukherjee,Sari Granroth,Mihaela Gorgoi,Olof Karis###
(1002542, 1002542)
 We find that diffusion begins already at comparably lowtemperatures between 200 circC and 250 circC, where Mn appears tobe most prone to diffusion.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Dipolar coupling between nanopillar spin valves and magnetic quantum cellular automata arrays|Madalina Colci,Mark B. Johnson###
(1002904, 1002904)
 These resultsbear directly on the design of magnetic quantum cellular automata (MQCA) logicdevices, showing that multilayer devices can couple to simple nanomagnets.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Dipolar coupling between nanopillar spin valves and magnetic quantum cellular automata arrays|Madalina Colci,Mark B. Johnson###
(1002979, 1002979)
Redesigning the hard layer of the magnetoresistive devices would make themoperational as an electronic input that will allow integration of MQCA networksin complex electronic circuitry.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Magnetocapacitance without magnetism|Meera M. Parish###
(1003117, 1003117)
 Parish and P.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 101, ',', 5]

B
###Magnetocapacitance without magnetism|Meera M. Parish###
(1003120, 1003120)
 B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 101, ',', 4]

In
###Magnetocapacitance without magnetism|Meera M. Parish###
(1003203, 1003203)
 In particular, we will showthat even simple conductor-dielectric layers exhibit a magnetocapacitance, andthus random bulk inhomogeneities are not a requirement for this effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 101, ',', 2]

HgTe
###Two-dimensional semimetal in a wide HgTe quantum well: magnetotransport and energy spectrum|G. M. Minkov,A. V. Germanenko,O. E. Rut,A. A. Sherstobitov,S. A. Dvoretski,N. N. Mikhailov###
(1003350, 1003351)
Two-dimensional semimetal in a wide HgTe quantum well magnetotransport and energy spectrum.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[228.0, -2, ',', 4],[282.0, 0, ',', 5],[313.0, 0, ',', 5]

HgTe
###Two-dimensional semimetal in a wide HgTe quantum well: magnetotransport and energy spectrum|G. M. Minkov,A. V. Germanenko,O. E. Rut,A. A. Sherstobitov,S. A. Dvoretski,N. N. Mikhailov###
(1003406, 1003407)
 The results of experimental study of the magnetoresistivity, the Hall andShubnikov-de Haas effects for the heterostructure with HgTe quantum well of20.2 nm width are reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[172.0, -2, ',', 3],[226.0, 0, ',', 4],[257.0, 0, ',', 4]

P
###Two-dimensional semimetal in a wide HgTe quantum well: magnetotransport and energy spectrum|G. M. Minkov,A. V. Germanenko,O. E. Rut,A. A. Sherstobitov,S. A. Dvoretski,N. N. Mikhailov###
(1003517, 1003517)
 Analyzing the data we conclude that the energyspectrum is drastically different from that calculated in framework ofk<missing VAR>P-model.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, -2, ',', 1],[116.0, 0, ',', 2],[147.0, 0, ',', 2]

GeMnTe
###Negative magnetoresistance and anomalous Hall effect in GeMnTe-SnMnTe spin-glass-like system|L. Kilanski,R. Szymczak,W. Dobrowolski,A. Podgórni,A. Avdonin,V. E. Slynko,E. I. Slynko###
(1003708, 1003710)
Negative magnetoresistance and anomalous Hall effect in GeMnTe-SnMnTe spin-glass-like system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 0.119, 'are', 1],[221.0, 10, 'E', 5],[231.0, 10, 'E', 5]

SnMnTe
###Negative magnetoresistance and anomalous Hall effect in GeMnTe-SnMnTe spin-glass-like system|L. Kilanski,R. Szymczak,W. Dobrowolski,A. Podgórni,A. Avdonin,V. E. Slynko,E. I. Slynko###
(1003712, 1003714)
Negative magnetoresistance and anomalous Hall effect in GeMnTe-SnMnTe spin-glass-like system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 0.119, 'are', 1],[217.0, 10, 'E', 5],[227.0, 10, 'E', 5]

Ge
###Negative magnetoresistance and anomalous Hall effect in GeMnTe-SnMnTe spin-glass-like system|L. Kilanski,R. Szymczak,W. Dobrowolski,A. Podgórni,A. Avdonin,V. E. Slynko,E. I. Slynko###
(1003737, 1003737)
 Magnetotransport properties of spin-glass-like Ge/1-x-y/Sn/x<missing VAR>/Mn/y<missing VAR>/Te mixedcrystals with chemical composition changing in the range of 0.083 < x<missing VAR> < 0.142and 0.012 < y<missing VAR> < 0.119 are presented.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 0.119, 'are', 0],[194.0, 10, 'E', 4],[204.0, 10, 'E', 4]

Sn
###Negative magnetoresistance and anomalous Hall effect in GeMnTe-SnMnTe spin-glass-like system|L. Kilanski,R. Szymczak,W. Dobrowolski,A. Podgórni,A. Avdonin,V. E. Slynko,E. I. Slynko###
(1003745, 1003745)
 Magnetotransport properties of spin-glass-like Ge/1-x-y/Sn/x<missing VAR>/Mn/y<missing VAR>/Te mixedcrystals with chemical composition changing in the range of 0.083 < x<missing VAR> < 0.142and 0.012 < y<missing VAR> < 0.119 are presented.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 0.119, 'are', 0],[186.0, 10, 'E', 4],[196.0, 10, 'E', 4]

Mn
###Negative magnetoresistance and anomalous Hall effect in GeMnTe-SnMnTe spin-glass-like system|L. Kilanski,R. Szymczak,W. Dobrowolski,A. Podgórni,A. Avdonin,V. E. Slynko,E. I. Slynko###
(1003749, 1003749)
 Magnetotransport properties of spin-glass-like Ge/1-x-y/Sn/x<missing VAR>/Mn/y<missing VAR>/Te mixedcrystals with chemical composition changing in the range of 0.083 < x<missing VAR> < 0.142and 0.012 < y<missing VAR> < 0.119 are presented.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 0.119, 'are', 0],[182.0, 10, 'E', 4],[192.0, 10, 'E', 4]

Te
###Negative magnetoresistance and anomalous Hall effect in GeMnTe-SnMnTe spin-glass-like system|L. Kilanski,R. Szymczak,W. Dobrowolski,A. Podgórni,A. Avdonin,V. E. Slynko,E. I. Slynko###
(1003753, 1003753)
 Magnetotransport properties of spin-glass-like Ge/1-x-y/Sn/x<missing VAR>/Mn/y<missing VAR>/Te mixedcrystals with chemical composition changing in the range of 0.083 < x<missing VAR> < 0.142and 0.012 < y<missing VAR> < 0.119 are presented.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 0.119, 'are', 0],[178.0, 10, 'E', 4],[188.0, 10, 'E', 4]

H
###Negative magnetoresistance and anomalous Hall effect in GeMnTe-SnMnTe spin-glass-like system|L. Kilanski,R. Szymczak,W. Dobrowolski,A. Podgórni,A. Avdonin,V. E. Slynko,E. I. Slynko###
(1003876, 1003876)
A pronounced hysteretic anomalous Hall effect (AHE) was observed.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 0.119, 'are', 3],[55.0, 10, 'E', 1],[65.0, 10, 'E', 1]

H
###Negative magnetoresistance and anomalous Hall effect in GeMnTe-SnMnTe spin-glass-like system|L. Kilanski,R. Szymczak,W. Dobrowolski,A. Podgórni,A. Avdonin,V. E. Slynko,E. I. Slynko###
(1003891, 1003891)
 The estimatedAHE<missing VAR> coefficient shows a small temperature dependence and is dependent onMn-content, with changes in the range of 10E-7 < R<missing VAR>S < 10E-6 m<missing VAR>3/C.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 0.119, 'are', 4],[40.0, 10, 'E', 0],[50.0, 10, 'E', 0]

Mn
###Negative magnetoresistance and anomalous Hall effect in GeMnTe-SnMnTe spin-glass-like system|L. Kilanski,R. Szymczak,W. Dobrowolski,A. Podgórni,A. Avdonin,V. E. Slynko,E. I. Slynko###
(1003915, 1003915)
 The estimatedAHE<missing VAR> coefficient shows a small temperature dependence and is dependent onMn-content, with changes in the range of 10E-7 < R<missing VAR>S < 10E-6 m<missing VAR>3/C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 0.119, 'are', 4],[16.0, 10, 'E', 0],[26.0, 10, 'E', 0]

S
###Negative magnetoresistance and anomalous Hall effect in GeMnTe-SnMnTe spin-glass-like system|L. Kilanski,R. Szymczak,W. Dobrowolski,A. Podgórni,A. Avdonin,V. E. Slynko,E. I. Slynko###
(1003938, 1003938)
 The estimatedAHE<missing VAR> coefficient shows a small temperature dependence and is dependent onMn-content, with changes in the range of 10E-7 < R<missing VAR>S < 10E-6 m<missing VAR>3/C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 0.119, 'are', 4],[7.0, 10, 'E', 0],[3.0, 10, 'E', 0]

C
###Negative magnetoresistance and anomalous Hall effect in GeMnTe-SnMnTe spin-glass-like system|L. Kilanski,R. Szymczak,W. Dobrowolski,A. Podgórni,A. Avdonin,V. E. Slynko,E. I. Slynko###
(1003948, 1003948)
 The estimatedAHE<missing VAR> coefficient shows a small temperature dependence and is dependent onMn-content, with changes in the range of 10E-7 < R<missing VAR>S < 10E-6 m<missing VAR>3/C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 0.119, 'are', 4],[17.0, 10, 'E', 0],[7.0, 10, 'E', 0]

H
###Negative magnetoresistance and anomalous Hall effect in GeMnTe-SnMnTe spin-glass-like system|L. Kilanski,R. Szymczak,W. Dobrowolski,A. Podgórni,A. Avdonin,V. E. Slynko,E. I. Slynko###
(1003969, 1003969)
 The scalinglaw analysis has proven that the AHE<missing VAR> in this system is due to the extrinsicmechanisms, mainly due to the skew scattering accompanied with the side jumpprocesses.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 0.119, 'are', 5],[38.0, 10, 'E', 1],[28.0, 10, 'E', 1]

Sr3Ru2O7
###Flat Bands and Enigma of Metamagnetic Quantum Critical Regime in Sr3Ru2O7|V. R. Shaginyan,A. Z. Msezane,K. G. Popov,J. W. Clark,M. V. Zverev,V. A. Khodel###
(1004046, 1004051)
Flat Bands and Enigma of Metamagnetic Quantum Critical Regime in Sr3Ru2O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr3Ru2O7
###Flat Bands and Enigma of Metamagnetic Quantum Critical Regime in Sr3Ru2O7|V. R. Shaginyan,A. Z. Msezane,K. G. Popov,J. W. Clark,M. V. Zverev,V. A. Khodel###
(1004079, 1004084)
 Understanding the nature of field-tuned metamagnetic quantum criticality inthe ruthenate Sr3Ru2O7 has presented a significant challenge within condensedmatter physics.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr3Ru2O7
###Flat Bands and Enigma of Metamagnetic Quantum Critical Regime in Sr3Ru2O7|V. R. Shaginyan,A. Z. Msezane,K. G. Popov,J. W. Clark,M. V. Zverev,V. A. Khodel###
(1004188, 1004193)
 We finda challenging connection between Sr3Ru2O7 and heavy-fermion metals expressinguniversal physics that transcends microscopic details.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Flat Bands and Enigma of Metamagnetic Quantum Critical Regime in Sr3Ru2O7|V. R. Shaginyan,A. Z. Msezane,K. G. Popov,J. W. Clark,M. V. Zverev,V. A. Khodel###
(1004230, 1004230)
 Our construction of theT<missing VAR>-B phase diagram of Sr3Ru2O7 permits us to explain main features of theexperimental one, and unambiguously implies an interpretation of itsextraordinary low-temperature thermodynamic in terms of fermion condensationquantum phase transition leading to the formation of a flat band at therestricted range of magnetic fields B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr3Ru2O7
###Flat Bands and Enigma of Metamagnetic Quantum Critical Regime in Sr3Ru2O7|V. R. Shaginyan,A. Z. Msezane,K. G. Popov,J. W. Clark,M. V. Zverev,V. A. Khodel###
(1004238, 1004243)
 Our construction of theT<missing VAR>-B phase diagram of Sr3Ru2O7 permits us to explain main features of theexperimental one, and unambiguously implies an interpretation of itsextraordinary low-temperature thermodynamic in terms of fermion condensationquantum phase transition leading to the formation of a flat band at therestricted range of magnetic fields B.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Flat Bands and Enigma of Metamagnetic Quantum Critical Regime in Sr3Ru2O7|V. R. Shaginyan,A. Z. Msezane,K. G. Popov,J. W. Clark,M. V. Zverev,V. A. Khodel###
(1004338, 1004338)
 Our construction of theT<missing VAR>-B phase diagram of Sr3Ru2O7 permits us to explain main features of theexperimental one, and unambiguously implies an interpretation of itsextraordinary low-temperature thermodynamic in terms of fermion condensationquantum phase transition leading to the formation of a flat band at therestricted range of magnetic fields B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Flat Bands and Enigma of Metamagnetic Quantum Critical Regime in Sr3Ru2O7|V. R. Shaginyan,A. Z. Msezane,K. G. Popov,J. W. Clark,M. V. Zverev,V. A. Khodel###
(1004383, 1004383)
 We show that it is the flat band thatgenerates both the entropy peak and the resistivity jumps at the Q<missing VAR>CPs.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La2-xSr
###Emergence of superconductivity from the dynamically heterogeneous insulating state in La_{2-x}Sr_{x}CuO_{4}|Xiaoyan Shi,G. Logvenov,A. T. Bollinger,I. Božović,C. Panagopoulos,Dragana Popović###
(1004415, 1004419)
Emergence of superconductivity from the dynamically heterogeneous insulating state in La2-xSrx<missing VAR>CuO4.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

CuO4
###Emergence of superconductivity from the dynamically heterogeneous insulating state in La_{2-x}Sr_{x}CuO_{4}|Xiaoyan Shi,G. Logvenov,A. T. Bollinger,I. Božović,C. Panagopoulos,Dragana Popović###
(1004421, 1004423)
Emergence of superconductivity from the dynamically heterogeneous insulating state in La2-xSrx<missing VAR>CuO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SI
###Emergence of superconductivity from the dynamically heterogeneous insulating state in La_{2-x}Sr_{x}CuO_{4}|Xiaoyan Shi,G. Logvenov,A. T. Bollinger,I. Božović,C. Panagopoulos,Dragana Popović###
(1004503, 1004504)
 Even though thissuperconductor-insulator transition (SIT) is a zero-temperature transition,measurements are not usually carried out at low temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La2-xSr
###Emergence of superconductivity from the dynamically heterogeneous insulating state in La_{2-x}Sr_{x}CuO_{4}|Xiaoyan Shi,G. Logvenov,A. T. Bollinger,I. Božović,C. Panagopoulos,Dragana Popović###
(1004583, 1004587)
 Here we usemagnetoresistance to probe both the insulating state at very low temperaturesand the presence of superconducting fluctuations in La2-xSrx<missing VAR>CuO4(L<missing VAR>SCO)films, for doping levels that range from the insulator to the superconductor(x<missing VAR>0.03-0.08).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

O4
###Emergence of superconductivity from the dynamically heterogeneous insulating state in La_{2-x}Sr_{x}CuO_{4}|Xiaoyan Shi,G. Logvenov,A. T. Bollinger,I. Božović,C. Panagopoulos,Dragana Popović###
(1004590, 1004591)
 Here we usemagnetoresistance to probe both the insulating state at very low temperaturesand the presence of superconducting fluctuations in La2-xSrx<missing VAR>CuO4(L<missing VAR>SCO)films, for doping levels that range from the insulator to the superconductor(x<missing VAR>0.03-0.08).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Emergence of superconductivity from the dynamically heterogeneous insulating state in La_{2-x}Sr_{x}CuO_{4}|Xiaoyan Shi,G. Logvenov,A. T. Bollinger,I. Božović,C. Panagopoulos,Dragana Popović###
(1004596, 1004596)
 Here we usemagnetoresistance to probe both the insulating state at very low temperaturesand the presence of superconducting fluctuations in La2-xSrx<missing VAR>CuO4(L<missing VAR>SCO)films, for doping levels that range from the insulator to the superconductor(x<missing VAR>0.03-0.08).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SI
###Emergence of superconductivity from the dynamically heterogeneous insulating state in La_{2-x}Sr_{x}CuO_{4}|Xiaoyan Shi,G. Logvenov,A. T. Bollinger,I. Božović,C. Panagopoulos,Dragana Popović###
(1004702, 1004703)
 We observe that the charge glass behavior, characteristic of theinsulating state, is suppressed with doping, but it coexists withsuperconducting fluctuations that emerge already on the insulating side of theSIT<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SI
###Emergence of superconductivity from the dynamically heterogeneous insulating state in La_{2-x}Sr_{x}CuO_{4}|Xiaoyan Shi,G. Logvenov,A. T. Bollinger,I. Božović,C. Panagopoulos,Dragana Popović###
(1004757, 1004758)
 The unexpected quenching of the superconducting fluctuations by thecompeting charge order at low temperatures provides a new perspective on themechanism for the SIT<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Gate voltage controlled electronic transport through a ferromagnet/normal/ferromagnet junction on the surface of a topological insulator|K. H. Zhang,Z. C. Wang,Q. R. Zheng,G. Su###
(1005019, 1005019)
 In addition, when there exists amagnetization component in the surface plane, it is shown that only thecomponent parallel to the junction interface has an influence on theconductance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/MgO/Fe
###Quantum transport modeling of Fe/MgO/Fe magnetic tunnel junction with FeO$_{0.5}$ buffer layer: the effects of correlations|Vladimir Timoshevskii,Yibin Hu,É. Marcotte,Hong Guo###
(1005101, 1005106)
Quantum transport modeling of Fe/MgO/Fe magnetic tunnel junction with FeO0.5 buffer layer the effects of correlations.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

FeO0.5
###Quantum transport modeling of Fe/MgO/Fe magnetic tunnel junction with FeO$_{0.5}$ buffer layer: the effects of correlations|Vladimir Timoshevskii,Yibin Hu,É. Marcotte,Hong Guo###
(1005116, 1005118)
Quantum transport modeling of Fe/MgO/Fe magnetic tunnel junction with FeO0.5 buffer layer the effects of correlations.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/MgO/Fe
###Quantum transport modeling of Fe/MgO/Fe magnetic tunnel junction with FeO$_{0.5}$ buffer layer: the effects of correlations|Vladimir Timoshevskii,Yibin Hu,É. Marcotte,Hong Guo###
(1005155, 1005160)
 We report textitab initio simulations of quantum transport properties ofFe/MgO/Fe trilayer structures with FeO0.5 buffer iron oxide layer, whereon-site Coulomb interaction is explicitly taken into account by local densityapproximation  Hubbard textitU approach.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

FeO0.5
###Quantum transport modeling of Fe/MgO/Fe magnetic tunnel junction with FeO$_{0.5}$ buffer layer: the effects of correlations|Vladimir Timoshevskii,Yibin Hu,É. Marcotte,Hong Guo###
(1005168, 1005170)
 We report textitab initio simulations of quantum transport properties ofFe/MgO/Fe trilayer structures with FeO0.5 buffer iron oxide layer, whereon-site Coulomb interaction is explicitly taken into account by local densityapproximation  Hubbard textitU approach.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

U
###Quantum transport modeling of Fe/MgO/Fe magnetic tunnel junction with FeO$_{0.5}$ buffer layer: the effects of correlations|Vladimir Timoshevskii,Yibin Hu,É. Marcotte,Hong Guo###
(1005215, 1005215)
 We report textitab initio simulations of quantum transport properties ofFe/MgO/Fe trilayer structures with FeO0.5 buffer iron oxide layer, whereon-site Coulomb interaction is explicitly taken into account by local densityapproximation  Hubbard textitU approach.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Quantum transport modeling of Fe/MgO/Fe magnetic tunnel junction with FeO$_{0.5}$ buffer layer: the effects of correlations|Vladimir Timoshevskii,Yibin Hu,É. Marcotte,Hong Guo###
(1005329, 1005329)
 We present an understanding of microscopicdetails of this phenomenon, connecting it to localization of the Fermielectrons of particular symmetry, which takes place in the buffer Fe-O layer,when on-site Coulomb repulsion is introduced.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Quantum transport modeling of Fe/MgO/Fe magnetic tunnel junction with FeO$_{0.5}$ buffer layer: the effects of correlations|Vladimir Timoshevskii,Yibin Hu,É. Marcotte,Hong Guo###
(1005331, 1005331)
 We present an understanding of microscopicdetails of this phenomenon, connecting it to localization of the Fermielectrons of particular symmetry, which takes place in the buffer Fe-O layer,when on-site Coulomb repulsion is introduced.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Quantum transport modeling of Fe/MgO/Fe magnetic tunnel junction with FeO$_{0.5}$ buffer layer: the effects of correlations|Vladimir Timoshevskii,Yibin Hu,É. Marcotte,Hong Guo###
(1005379, 1005379)
 We further study the possibleinfluence of the symmetry reduction in the buffer Fe-O layer on the transportproperties of the Fe/MgO/Fe interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Quantum transport modeling of Fe/MgO/Fe magnetic tunnel junction with FeO$_{0.5}$ buffer layer: the effects of correlations|Vladimir Timoshevskii,Yibin Hu,É. Marcotte,Hong Guo###
(1005381, 1005381)
 We further study the possibleinfluence of the symmetry reduction in the buffer Fe-O layer on the transportproperties of the Fe/MgO/Fe interface.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/MgO/Fe
###Quantum transport modeling of Fe/MgO/Fe magnetic tunnel junction with FeO$_{0.5}$ buffer layer: the effects of correlations|Vladimir Timoshevskii,Yibin Hu,É. Marcotte,Hong Guo###
(1005398, 1005403)
 We further study the possibleinfluence of the symmetry reduction in the buffer Fe-O layer on the transportproperties of the Fe/MgO/Fe interface.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Ni2-xSn7
###Anisotropic magnetization, resistivity and heat capacity of single crystalline R3Ni2-xSn7 (R = La, Ce, Pr and Nd)|Xiao Lin,Sergey L. Bud'ko,Srinivasa Thimmaiah,Paul C. Canfield###
(1005437, 1005442)
Anisotropic magnetization, resistivity and heat capacity of single crystalline R<missing VAR>3Ni2-xSn7 (R<missing VAR>  La, Ce, Pr and Nd).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[129.0, 0.1, 'for', 2],[302.0, 70, 'kOe', 6]

La
###Anisotropic magnetization, resistivity and heat capacity of single crystalline R3Ni2-xSn7 (R = La, Ce, Pr and Nd)|Xiao Lin,Sergey L. Bud'ko,Srinivasa Thimmaiah,Paul C. Canfield###
(1005448, 1005448)
Anisotropic magnetization, resistivity and heat capacity of single crystalline R<missing VAR>3Ni2-xSn7 (R<missing VAR>  La, Ce, Pr and Nd).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 0.1, 'for', 2],[296.0, 70, 'kOe', 6]

Ce
###Anisotropic magnetization, resistivity and heat capacity of single crystalline R3Ni2-xSn7 (R = La, Ce, Pr and Nd)|Xiao Lin,Sergey L. Bud'ko,Srinivasa Thimmaiah,Paul C. Canfield###
(1005451, 1005451)
Anisotropic magnetization, resistivity and heat capacity of single crystalline R<missing VAR>3Ni2-xSn7 (R<missing VAR>  La, Ce, Pr and Nd).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 0.1, 'for', 2],[293.0, 70, 'kOe', 6]

Pr
###Anisotropic magnetization, resistivity and heat capacity of single crystalline R3Ni2-xSn7 (R = La, Ce, Pr and Nd)|Xiao Lin,Sergey L. Bud'ko,Srinivasa Thimmaiah,Paul C. Canfield###
(1005454, 1005454)
Anisotropic magnetization, resistivity and heat capacity of single crystalline R<missing VAR>3Ni2-xSn7 (R<missing VAR>  La, Ce, Pr and Nd).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 0.1, 'for', 2],[290.0, 70, 'kOe', 6]

Nd
###Anisotropic magnetization, resistivity and heat capacity of single crystalline R3Ni2-xSn7 (R = La, Ce, Pr and Nd)|Xiao Lin,Sergey L. Bud'ko,Srinivasa Thimmaiah,Paul C. Canfield###
(1005458, 1005458)
Anisotropic magnetization, resistivity and heat capacity of single crystalline R<missing VAR>3Ni2-xSn7 (R<missing VAR>  La, Ce, Pr and Nd).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 0.1, 'for', 2],[286.0, 70, 'kOe', 6]

Ni2-xSn7
###Anisotropic magnetization, resistivity and heat capacity of single crystalline R3Ni2-xSn7 (R = La, Ce, Pr and Nd)|Xiao Lin,Sergey L. Bud'ko,Srinivasa Thimmaiah,Paul C. Canfield###
(1005476, 1005481)
 We present a detailed study of R<missing VAR>3Ni2-xSn7 (R<missing VAR>  La, Ce, Pr and Nd) singlecrystals by measurements of crystal structure, stoichiometry, temperaturedependent magnetic susceptibility, magnetization, electrical resistivity,magnetoresistance, and specific heat.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[90.0, 0.1, 'for', 1],[263.0, 70, 'kOe', 5]

La
###Anisotropic magnetization, resistivity and heat capacity of single crystalline R3Ni2-xSn7 (R = La, Ce, Pr and Nd)|Xiao Lin,Sergey L. Bud'ko,Srinivasa Thimmaiah,Paul C. Canfield###
(1005487, 1005487)
 We present a detailed study of R<missing VAR>3Ni2-xSn7 (R<missing VAR>  La, Ce, Pr and Nd) singlecrystals by measurements of crystal structure, stoichiometry, temperaturedependent magnetic susceptibility, magnetization, electrical resistivity,magnetoresistance, and specific heat.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 0.1, 'for', 1],[257.0, 70, 'kOe', 5]

Ce
###Anisotropic magnetization, resistivity and heat capacity of single crystalline R3Ni2-xSn7 (R = La, Ce, Pr and Nd)|Xiao Lin,Sergey L. Bud'ko,Srinivasa Thimmaiah,Paul C. Canfield###
(1005490, 1005490)
 We present a detailed study of R<missing VAR>3Ni2-xSn7 (R<missing VAR>  La, Ce, Pr and Nd) singlecrystals by measurements of crystal structure, stoichiometry, temperaturedependent magnetic susceptibility, magnetization, electrical resistivity,magnetoresistance, and specific heat.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 0.1, 'for', 1],[254.0, 70, 'kOe', 5]

Pr
###Anisotropic magnetization, resistivity and heat capacity of single crystalline R3Ni2-xSn7 (R = La, Ce, Pr and Nd)|Xiao Lin,Sergey L. Bud'ko,Srinivasa Thimmaiah,Paul C. Canfield###
(1005493, 1005493)
 We present a detailed study of R<missing VAR>3Ni2-xSn7 (R<missing VAR>  La, Ce, Pr and Nd) singlecrystals by measurements of crystal structure, stoichiometry, temperaturedependent magnetic susceptibility, magnetization, electrical resistivity,magnetoresistance, and specific heat.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 0.1, 'for', 1],[251.0, 70, 'kOe', 5]

Nd
###Anisotropic magnetization, resistivity and heat capacity of single crystalline R3Ni2-xSn7 (R = La, Ce, Pr and Nd)|Xiao Lin,Sergey L. Bud'ko,Srinivasa Thimmaiah,Paul C. Canfield###
(1005497, 1005497)
 We present a detailed study of R<missing VAR>3Ni2-xSn7 (R<missing VAR>  La, Ce, Pr and Nd) singlecrystals by measurements of crystal structure, stoichiometry, temperaturedependent magnetic susceptibility, magnetization, electrical resistivity,magnetoresistance, and specific heat.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 0.1, 'for', 1],[247.0, 70, 'kOe', 5]

Ni
###Anisotropic magnetization, resistivity and heat capacity of single crystalline R3Ni2-xSn7 (R = La, Ce, Pr and Nd)|Xiao Lin,Sergey L. Bud'ko,Srinivasa Thimmaiah,Paul C. Canfield###
(1005558, 1005558)
 This series forms with partial Nioccupancy with x<missing VAR> varying from  0.1 for R<missing VAR>  La to 0.7 for R<missing VAR>  Nd.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 0.1, 'for', 0],[186.0, 70, 'kOe', 4]

La
###Anisotropic magnetization, resistivity and heat capacity of single crystalline R3Ni2-xSn7 (R = La, Ce, Pr and Nd)|Xiao Lin,Sergey L. Bud'ko,Srinivasa Thimmaiah,Paul C. Canfield###
(1005576, 1005576)
 This series forms with partial Nioccupancy with x<missing VAR> varying from  0.1 for R<missing VAR>  La to 0.7 for R<missing VAR>  Nd.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 0.1, 'for', 0],[168.0, 70, 'kOe', 4]

Nd
###Anisotropic magnetization, resistivity and heat capacity of single crystalline R3Ni2-xSn7 (R = La, Ce, Pr and Nd)|Xiao Lin,Sergey L. Bud'ko,Srinivasa Thimmaiah,Paul C. Canfield###
(1005587, 1005587)
 This series forms with partial Nioccupancy with x<missing VAR> varying from  0.1 for R<missing VAR>  La to 0.7 for R<missing VAR>  Nd.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 0.1, 'for', 0],[157.0, 70, 'kOe', 4]

Ni2-xSn7
###Anisotropic magnetization, resistivity and heat capacity of single crystalline R3Ni2-xSn7 (R = La, Ce, Pr and Nd)|Xiao Lin,Sergey L. Bud'ko,Srinivasa Thimmaiah,Paul C. Canfield###
(1005642, 1005647)
 Determination of clear anisotropies as well as antiferromagneticordering temperatures for R<missing VAR>3Ni2-xSn7 (R<missing VAR>  Ce, Pr and Nd) have been made.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[71.0, 0.1, 'for', 2],[97.0, 70, 'kOe', 2]

Ce
###Anisotropic magnetization, resistivity and heat capacity of single crystalline R3Ni2-xSn7 (R = La, Ce, Pr and Nd)|Xiao Lin,Sergey L. Bud'ko,Srinivasa Thimmaiah,Paul C. Canfield###
(1005653, 1005653)
 Determination of clear anisotropies as well as antiferromagneticordering temperatures for R<missing VAR>3Ni2-xSn7 (R<missing VAR>  Ce, Pr and Nd) have been made.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 0.1, 'for', 2],[91.0, 70, 'kOe', 2]

Pr
###Anisotropic magnetization, resistivity and heat capacity of single crystalline R3Ni2-xSn7 (R = La, Ce, Pr and Nd)|Xiao Lin,Sergey L. Bud'ko,Srinivasa Thimmaiah,Paul C. Canfield###
(1005656, 1005656)
 Determination of clear anisotropies as well as antiferromagneticordering temperatures for R<missing VAR>3Ni2-xSn7 (R<missing VAR>  Ce, Pr and Nd) have been made.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 0.1, 'for', 2],[88.0, 70, 'kOe', 2]

Nd
###Anisotropic magnetization, resistivity and heat capacity of single crystalline R3Ni2-xSn7 (R = La, Ce, Pr and Nd)|Xiao Lin,Sergey L. Bud'ko,Srinivasa Thimmaiah,Paul C. Canfield###
(1005660, 1005660)
 Determination of clear anisotropies as well as antiferromagneticordering temperatures for R<missing VAR>3Ni2-xSn7 (R<missing VAR>  Ce, Pr and Nd) have been made.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 0.1, 'for', 2],[84.0, 70, 'kOe', 2]

Pr3Ni1.56Sn7
###Anisotropic magnetization, resistivity and heat capacity of single crystalline R3Ni2-xSn7 (R = La, Ce, Pr and Nd)|Xiao Lin,Sergey L. Bud'ko,Srinivasa Thimmaiah,Paul C. Canfield###
(1005673, 1005678)
 ForPr3Ni1.56Sn7 and Nd3Ni1.34Sn7, multiple magnetic transitions take place uponcooling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13494809688581313,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6055363321799307,0,0,0,0,0,0,0,0,0.25951557093425603,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 0.1, 'for', 3],[66.0, 70, 'kOe', 1]

Nd3Ni1.34Sn7
###Anisotropic magnetization, resistivity and heat capacity of single crystalline R3Ni2-xSn7 (R = La, Ce, Pr and Nd)|Xiao Lin,Sergey L. Bud'ko,Srinivasa Thimmaiah,Paul C. Canfield###
(1005682, 1005687)
 ForPr3Ni1.56Sn7 and Nd3Ni1.34Sn7, multiple magnetic transitions take place uponcooling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1181657848324515,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6172839506172839,0,0,0,0,0,0,0,0,0,0.26455026455026454,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 0.1, 'for', 3],[57.0, 70, 'kOe', 1]

Ce
###Anisotropic magnetization, resistivity and heat capacity of single crystalline R3Ni2-xSn7 (R = La, Ce, Pr and Nd)|Xiao Lin,Sergey L. Bud'ko,Srinivasa Thimmaiah,Paul C. Canfield###
(1005720, 1005720)
 Metamagnetic transitions in this family (R<missing VAR>  Ce, Pr and Nd) weredetected for applied magnetic fields below 70 kOe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 0.1, 'for', 4],[24.0, 70, 'kOe', 0]

Pr
###Anisotropic magnetization, resistivity and heat capacity of single crystalline R3Ni2-xSn7 (R = La, Ce, Pr and Nd)|Xiao Lin,Sergey L. Bud'ko,Srinivasa Thimmaiah,Paul C. Canfield###
(1005723, 1005723)
 Metamagnetic transitions in this family (R<missing VAR>  Ce, Pr and Nd) weredetected for applied magnetic fields below 70 kOe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 0.1, 'for', 4],[21.0, 70, 'kOe', 0]

Nd
###Anisotropic magnetization, resistivity and heat capacity of single crystalline R3Ni2-xSn7 (R = La, Ce, Pr and Nd)|Xiao Lin,Sergey L. Bud'ko,Srinivasa Thimmaiah,Paul C. Canfield###
(1005727, 1005727)
 Metamagnetic transitions in this family (R<missing VAR>  Ce, Pr and Nd) weredetected for applied magnetic fields below 70 kOe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 0.1, 'for', 4],[17.0, 70, 'kOe', 0]

H
###Anisotropic magnetization, resistivity and heat capacity of single crystalline R3Ni2-xSn7 (R = La, Ce, Pr and Nd)|Xiao Lin,Sergey L. Bud'ko,Srinivasa Thimmaiah,Paul C. Canfield###
(1005749, 1005749)
 An H-T<missing VAR> phase diagram ofCe3Ni1.69Sn7 was assembled to shed light on its low field properties and torule out possible quantum critical effects.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 0.1, 'for', 5],[5.0, 70, 'kOe', 1]

Ce3Ni1.69Sn7
###Anisotropic magnetization, resistivity and heat capacity of single crystalline R3Ni2-xSn7 (R = La, Ce, Pr and Nd)|Xiao Lin,Sergey L. Bud'ko,Srinivasa Thimmaiah,Paul C. Canfield###
(1005760, 1005765)
 An H-T<missing VAR> phase diagram ofCe3Ni1.69Sn7 was assembled to shed light on its low field properties and torule out possible quantum critical effects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14456800684345594,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5988023952095809,0,0,0,0,0,0,0,0.2566295979469632,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[189.0, 0.1, 'for', 5],[16.0, 70, 'kOe', 1]

F
###FLUXCAP: A flux-coupled ac/dc magnetizing device|Daniel B. Gopman,Huanlong Liu,Andrew D. Kent###
(1006137, 1006137)
FLUXCAP A flux-coupled ac/dc magnetizing device.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[211.0, -400, 'to', 3],[228.0, 1, 'mT', 3]

C
###FLUXCAP: A flux-coupled ac/dc magnetizing device|Daniel B. Gopman,Huanlong Liu,Andrew D. Kent###
(1006141, 1006141)
FLUXCAP A flux-coupled ac/dc magnetizing device.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[207.0, -400, 'to', 3],[224.0, 1, 'mT', 3]

P
###FLUXCAP: A flux-coupled ac/dc magnetizing device|Daniel B. Gopman,Huanlong Liu,Andrew D. Kent###
(1006143, 1006143)
FLUXCAP A flux-coupled ac/dc magnetizing device.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, -400, 'to', 3],[222.0, 1, 'mT', 3]

F
###FLUXCAP: A flux-coupled ac/dc magnetizing device|Daniel B. Gopman,Huanlong Liu,Andrew D. Kent###
(1006331, 1006331)
 This flux capture instrument (FLUXCAP) can producefields from -400 to 400 mT, with field resolution less than 1 mT.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, -400, 'to', 0],[34.0, 1, 'mT', 0]

C
###FLUXCAP: A flux-coupled ac/dc magnetizing device|Daniel B. Gopman,Huanlong Liu,Andrew D. Kent###
(1006335, 1006335)
 This flux capture instrument (FLUXCAP) can producefields from -400 to 400 mT, with field resolution less than 1 mT.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, -400, 'to', 0],[30.0, 1, 'mT', 0]

P
###FLUXCAP: A flux-coupled ac/dc magnetizing device|Daniel B. Gopman,Huanlong Liu,Andrew D. Kent###
(1006337, 1006337)
 This flux capture instrument (FLUXCAP) can producefields from -400 to 400 mT, with field resolution less than 1 mT.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, -400, 'to', 0],[28.0, 1, 'mT', 0]

SiC
###Low temperature transport properties of multigraphene structures on 6H-SiC obtained by thermal graphitization: evidences of a presence of nearly perfect graphene layer|A. A. Lebedev,N. V. Agrinskaya,V. A. Beresovets,V. I. Kozub,S. P. Lebedev,A. A. Sitnikova###
(1006485, 1006486)
Low temperature transport properties of multigraphene structures on 6H-SiC obtained by thermal graphitization evidences of a presence of nearly perfect graphene layer.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 6, 'H', 0],[40.0, 6, 'H', 1]

SiC
###Low temperature transport properties of multigraphene structures on 6H-SiC obtained by thermal graphitization: evidences of a presence of nearly perfect graphene layer|A. A. Lebedev,N. V. Agrinskaya,V. A. Beresovets,V. I. Kozub,S. P. Lebedev,A. A. Sitnikova###
(1006528, 1006529)
 Transport properties of multigraphene layers on 6H-SiC substrates fabricatedby thermal graphitization of SiC were studied.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 6, 'H', 1],[2.0, 6, 'H', 0]

SiC
###Low temperature transport properties of multigraphene structures on 6H-SiC obtained by thermal graphitization: evidences of a presence of nearly perfect graphene layer|A. A. Lebedev,N. V. Agrinskaya,V. A. Beresovets,V. I. Kozub,S. P. Lebedev,A. A. Sitnikova###
(1006544, 1006545)
 Transport properties of multigraphene layers on 6H-SiC substrates fabricatedby thermal graphitization of SiC were studied.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 6, 'H', 1],[18.0, 6, 'H', 0]

SiC
###Low temperature transport properties of multigraphene structures on 6H-SiC obtained by thermal graphitization: evidences of a presence of nearly perfect graphene layer|A. A. Lebedev,N. V. Agrinskaya,V. A. Beresovets,V. I. Kozub,S. P. Lebedev,A. A. Sitnikova###
(1006592, 1006593)
 The principal result is thatthese structures were shown to contain a nearly perfect graphene layer situatedbetween the SiC substrate and multgraphene layer.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 6, 'H', 2],[66.0, 6, 'H', 1]

S
###Effects of Transverse Magnetic Anisotropy on Current-Induced Spin Switching|Maciej Misiorny,Józef Barnaś###
(1006873, 1006873)
 Spin-polarized transport through bistable magnetic adatoms or single-moleculemagnets (SM<missing VAR>Ms), which exhibit both uniaxial and transverse magnetic anisotropy,is considered theoretically.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Effects of Transverse Magnetic Anisotropy on Current-Induced Spin Switching|Maciej Misiorny,Józef Barnaś###
(1006938, 1006938)
 The main focus is on the impact of transverseanisotropy on transport characteristics and the adatoms<missing VAR>/SMMs spin.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Effects of Transverse Magnetic Anisotropy on Current-Induced Spin Switching|Maciej Misiorny,Józef Barnaś###
(1006946, 1006946)
 Inparticular, we analyze the role of quantum tunneling of magnetization (QTM) inthe mechanism of the current-induced spin switching, and show that the QTMphenomenon becomes revealed as resonant peaks in the average values of themolecules<missing VAR> spin and in the charge current.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Effects of Transverse Magnetic Anisotropy on Current-Induced Spin Switching|Maciej Misiorny,Józef Barnaś###
(1007125, 1007125)
 We also show that the conductance generally depends on therelative orientation of the average adatoms<missing VAR>/SMMs spin and electrodes<missing VAR>magnetic moment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Effects of Transverse Magnetic Anisotropy on Current-Induced Spin Switching|Maciej Misiorny,Józef Barnaś###
(1007177, 1007177)
 This spin-valve like magnetoresistance effect can be used tocontrol spin switching of the adatoms<missing VAR>/SMMs spin.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GdRhGe
###Observation of large positive magnetoresistance and its sign reversal in GdRhGe|Sachin Gupta,K. G. Suresh,A. K. Nigam###
(1007213, 1007215)
Observation of large positive magnetoresistance and its sign reversal in GdRhGe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 24, 'K', 3],[187.0, 48, '%', 5],[191.0, 2, 'K', 5],[194.0, 50, 'kOe', 5]

GdRhGe
###Observation of large positive magnetoresistance and its sign reversal in GdRhGe|Sachin Gupta,K. G. Suresh,A. K. Nigam###
(1007241, 1007243)
 Magnetic properties, heat capacity and magnetoresistance (MR) ofpolycrystalline GdRhGe are investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 24, 'K', 2],[159.0, 48, '%', 4],[163.0, 2, 'K', 4],[166.0, 50, 'kOe', 4]

K
###Observation of large positive magnetoresistance and its sign reversal in GdRhGe|Sachin Gupta,K. G. Suresh,A. K. Nigam###
(1007270, 1007270)
 It shows two antiferromagnetictransitions, one at T<missing VAR>131.8 K and the other at T<missing VAR>224 K, and field inducedmetamagnetic transition over a wide temperature range.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 24, 'K', 1],[132.0, 48, '%', 3],[136.0, 2, 'K', 3],[139.0, 50, 'kOe', 3]

K
###Observation of large positive magnetoresistance and its sign reversal in GdRhGe|Sachin Gupta,K. G. Suresh,A. K. Nigam###
(1007284, 1007284)
 It shows two antiferromagnetictransitions, one at T<missing VAR>131.8 K and the other at T<missing VAR>224 K, and field inducedmetamagnetic transition over a wide temperature range.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 24, 'K', 1],[118.0, 48, '%', 3],[122.0, 2, 'K', 3],[125.0, 50, 'kOe', 3]

In
###Frustration-induced nanometre-scale inhomogeneity in a triangular antiferromagnet|Andrej Zorko,Othon Adamopoulos,Matej Komelj,Denis Arćon,Alexandros Lappas###
(1007584, 1007584)
 In these materials distinctphases compete and can coexist due to intertwined ordered parameters.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NaMnO2
###Frustration-induced nanometre-scale inhomogeneity in a triangular antiferromagnet|Andrej Zorko,Othon Adamopoulos,Matej Komelj,Denis Arćon,Alexandros Lappas###
(1007715, 1007718)
 Here wereport a paradigmatic magnetostructurally inhomogenous ground state of thegeometrically frustrated alpha-NaMnO2 that stems from the systems<missing VAR>aspiration to remove magnetic degeneracy and is possible only due to theexistence of near-degenerate crystal structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Electronic and Magnetic Reconstructions in Manganite Superlattices|Kalpataru Pradhan,Arno P. Kampf###
(1007900, 1007900)
 We investigate the electronic reconstruction at the interface betweenferromagnetic metallic (FM) and antiferromagnetic insulating (AFI) manganitesin superlattices using a two-orbital double-exchange model includingsuperexchange interactions, Jahn-Teller lattice distortions, and long rangeCoulomb interactions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Electronic and Magnetic Reconstructions in Manganite Superlattices|Kalpataru Pradhan,Arno P. Kampf###
(1007913, 1007913)
 We investigate the electronic reconstruction at the interface betweenferromagnetic metallic (FM) and antiferromagnetic insulating (AFI) manganitesin superlattices using a two-orbital double-exchange model includingsuperexchange interactions, Jahn-Teller lattice distortions, and long rangeCoulomb interactions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FI
###Electronic and Magnetic Reconstructions in Manganite Superlattices|Kalpataru Pradhan,Arno P. Kampf###
(1007994, 1007995)
 The magnetic and the transport properties criticallydepend on the thickness of the AFI layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FI
###Electronic and Magnetic Reconstructions in Manganite Superlattices|Kalpataru Pradhan,Arno P. Kampf###
(1008049, 1008050)
 Theinduced ferromagnetic moment in the AFI layers decreases monotonically withincreasing layer width, and the electron-density profile and the magneticstructure in the center of the AFI layer gradually return to the bulk limit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FI
###Electronic and Magnetic Reconstructions in Manganite Superlattices|Kalpataru Pradhan,Arno P. Kampf###
(1008098, 1008099)
 Theinduced ferromagnetic moment in the AFI layers decreases monotonically withincreasing layer width, and the electron-density profile and the magneticstructure in the center of the AFI layer gradually return to the bulk limit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FI
###Electronic and Magnetic Reconstructions in Manganite Superlattices|Kalpataru Pradhan,Arno P. Kampf###
(1008126, 1008127)
The width of the AFI layers and the charge-transfer profile at the interfacescontrol the magnitude of the magnetoresistance and the metal-insulatortransition of the FM<missing VAR>/AFI superlattices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Electronic and Magnetic Reconstructions in Manganite Superlattices|Kalpataru Pradhan,Arno P. Kampf###
(1008175, 1008175)
The width of the AFI layers and the charge-transfer profile at the interfacescontrol the magnitude of the magnetoresistance and the metal-insulatortransition of the FM<missing VAR>/AFI superlattices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FI
###Electronic and Magnetic Reconstructions in Manganite Superlattices|Kalpataru Pradhan,Arno P. Kampf###
(1008179, 1008180)
The width of the AFI layers and the charge-transfer profile at the interfacescontrol the magnitude of the magnetoresistance and the metal-insulatortransition of the FM<missing VAR>/AFI superlattices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YI
###Exchange magnetic field torques in YIG/Pt bilayers observed by the spin-Hall magnetoresistance|N. Vlietstra,J. Shan,V. Castel,J. Ben Youssef,G. E. W. Bauer,B. J. van Wees###
(1008572, 1008573)
Exchange magnetic field torques in YIG<missing VAR>/Pt bilayers observed by the spin-Hall magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[177.0, 3, ',', 3],[180.0, 4, ',', 3],[182.0, 8, 'and', 3],[183.0, 35, 'nm', 3]

Pt
###Exchange magnetic field torques in YIG/Pt bilayers observed by the spin-Hall magnetoresistance|N. Vlietstra,J. Shan,V. Castel,J. Ben Youssef,G. E. W. Bauer,B. J. van Wees###
(1008576, 1008576)
Exchange magnetic field torques in YIG<missing VAR>/Pt bilayers observed by the spin-Hall magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[174.0, 3, ',', 3],[177.0, 4, ',', 3],[179.0, 8, 'and', 3],[180.0, 35, 'nm', 3]

Pt
###Exchange magnetic field torques in YIG/Pt bilayers observed by the spin-Hall magnetoresistance|N. Vlietstra,J. Shan,V. Castel,J. Ben Youssef,G. E. W. Bauer,B. J. van Wees###
(1008628, 1008628)
 The effective field torque of an yttrium-iron-garnet film on the spinaccumulation in an attached Pt film is measured by the spin-Hallmagnetoresistance (SMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 3, ',', 2],[125.0, 4, ',', 2],[127.0, 8, 'and', 2],[128.0, 35, 'nm', 2]

S
###Exchange magnetic field torques in YIG/Pt bilayers observed by the spin-Hall magnetoresistance|N. Vlietstra,J. Shan,V. Castel,J. Ben Youssef,G. E. W. Bauer,B. J. van Wees###
(1008648, 1008648)
 The effective field torque of an yttrium-iron-garnet film on the spinaccumulation in an attached Pt film is measured by the spin-Hallmagnetoresistance (SMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 3, ',', 2],[105.0, 4, ',', 2],[107.0, 8, 'and', 2],[108.0, 35, 'nm', 2]

As
###Exchange magnetic field torques in YIG/Pt bilayers observed by the spin-Hall magnetoresistance|N. Vlietstra,J. Shan,V. Castel,J. Ben Youssef,G. E. W. Bauer,B. J. van Wees###
(1008654, 1008654)
 As a result, the magnetization direction of aferromagnetic insulating layer can be measured electrically.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 3, ',', 1],[99.0, 4, ',', 1],[101.0, 8, 'and', 1],[102.0, 35, 'nm', 1]

S
###Exchange magnetic field torques in YIG/Pt bilayers observed by the spin-Hall magnetoresistance|N. Vlietstra,J. Shan,V. Castel,J. Ben Youssef,G. E. W. Bauer,B. J. van Wees###
(1008715, 1008715)
 Experimentaltransverse and longitudinal resistances are well described by the theoreticalmodel of SMR in terms of the direct and inverse spin-Hall effect, for differentPt thicknesses [3, 4, 8 and 35nm].
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 3, ',', 0],[38.0, 4, ',', 0],[40.0, 8, 'and', 0],[41.0, 35, 'nm', 0]

Pt
###Exchange magnetic field torques in YIG/Pt bilayers observed by the spin-Hall magnetoresistance|N. Vlietstra,J. Shan,V. Castel,J. Ben Youssef,G. E. W. Bauer,B. J. van Wees###
(1008745, 1008745)
 Experimentaltransverse and longitudinal resistances are well described by the theoreticalmodel of SMR in terms of the direct and inverse spin-Hall effect, for differentPt thicknesses [3, 4, 8 and 35nm].
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 3, ',', 0],[8.0, 4, ',', 0],[10.0, 8, 'and', 0],[11.0, 35, 'nm', 0]

Pt
###Exchange magnetic field torques in YIG/Pt bilayers observed by the spin-Hall magnetoresistance|N. Vlietstra,J. Shan,V. Castel,J. Ben Youssef,G. E. W. Bauer,B. J. van Wees###
(1008772, 1008772)
 Adopting a spin-Hall angle of PtthetaSH0.08, we obtain the spin diffusion length of Pt(lambda1.1pm0.3nm) as well as the real(Gr(7pm3)times1014Omega-1m<missing VAR>-2) and imaginary part(Gi(5pm3)times1013Omega-1m<missing VAR>-2) of the spin-mixing conductanceand their ratio (Gr/Gi16pm4).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 3, ',', 1],[19.0, 4, ',', 1],[17.0, 8, 'and', 1],[16.0, 35, 'nm', 1]

SH0.08
###Exchange magnetic field torques in YIG/Pt bilayers observed by the spin-Hall magnetoresistance|N. Vlietstra,J. Shan,V. Castel,J. Ben Youssef,G. E. W. Bauer,B. J. van Wees###
(1008776, 1008778)
 Adopting a spin-Hall angle of PtthetaSH0.08, we obtain the spin diffusion length of Pt(lambda1.1pm0.3nm) as well as the real(Gr(7pm3)times1014Omega-1m<missing VAR>-2) and imaginary part(Gi(5pm3)times1013Omega-1m<missing VAR>-2) of the spin-mixing conductanceand their ratio (Gr/Gi16pm4).
Featurization terminated normally.
0.07407407407407407,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.9259259259259258,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 3, ',', 1],[23.0, 4, ',', 1],[21.0, 8, 'and', 1],[20.0, 35, 'nm', 1]

Pt
###Exchange magnetic field torques in YIG/Pt bilayers observed by the spin-Hall magnetoresistance|N. Vlietstra,J. Shan,V. Castel,J. Ben Youssef,G. E. W. Bauer,B. J. van Wees###
(1008795, 1008795)
 Adopting a spin-Hall angle of PtthetaSH0.08, we obtain the spin diffusion length of Pt(lambda1.1pm0.3nm) as well as the real(Gr(7pm3)times1014Omega-1m<missing VAR>-2) and imaginary part(Gi(5pm3)times1013Omega-1m<missing VAR>-2) of the spin-mixing conductanceand their ratio (Gr/Gi16pm4).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 3, ',', 1],[42.0, 4, ',', 1],[40.0, 8, 'and', 1],[39.0, 35, 'nm', 1]

In
###Iron impurities in gold and silver: Comparison of transport measurements to numerical renormalization group calculations exploiting non-Abelian symmetries|M. Hanl,A. Weichselbaum,T. A. Costi,F. Mallet,L. Saminadayar,C. Bäuerle,J. von Delft###
(1009097, 1009097)
 In addition we also carry out finite-temperaturecalculations for the magnetoresistivity of fully screened Kondo models with S 1/2, 1 and 3/2, and compare the results with available measurements for iron insilver, finding excellent agreement between theory and experiment for thespin-3/2 three-channel Kondo model.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 102, ',', 1],[43.0, 2, ',', 0],[45.0, 1, 'and', 0],[49.0, 2, ',', 0]

S
###Iron impurities in gold and silver: Comparison of transport measurements to numerical renormalization group calculations exploiting non-Abelian symmetries|M. Hanl,A. Weichselbaum,T. A. Costi,F. Mallet,L. Saminadayar,C. Bäuerle,J. von Delft###
(1009134, 1009134)
 In addition we also carry out finite-temperaturecalculations for the magnetoresistivity of fully screened Kondo models with S 1/2, 1 and 3/2, and compare the results with available measurements for iron insilver, finding excellent agreement between theory and experiment for thespin-3/2 three-channel Kondo model.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 102, ',', 1],[6.0, 2, ',', 0],[8.0, 1, 'and', 0],[12.0, 2, ',', 0]

Si
###Electron-electron interaction correction and magnetoresistance in tilted fields in Si-based 2D systems|A. Yu. Kuntsevich,L. A. Morgun,V. M. Pudalov###
(1009301, 1009301)
Electron-electron interaction correction and magnetoresistance in tilted fields in Si-based 2D systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 2, 'D', 0],[44.0, 2, 'D', 1],[238.0, 26, ',', 6]

Si
###Electron-electron interaction correction and magnetoresistance in tilted fields in Si-based 2D systems|A. Yu. Kuntsevich,L. A. Morgun,V. M. Pudalov###
(1009354, 1009354)
 We study diffusive electron-electron interaction correction to conductivityby analyzing simultaneously rhoxx and rhoxy for disordered 2Delectron systems in Si in tilted magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 2, 'D', 1],[9.0, 2, 'D', 0],[185.0, 26, ',', 5]

In
###Electron-electron interaction correction and magnetoresistance in tilted fields in Si-based 2D systems|A. Yu. Kuntsevich,L. A. Morgun,V. M. Pudalov###
(1009399, 1009399)
 Inparticular, by changing the tilt angle we prove experimentally that in thefield range g<missing VAR>muBB>kBT the correction depends on modulus of magnetic fieldrather than on its direction, which is expected for a system with isotropicg<missing VAR>-factor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 2, 'D', 3],[54.0, 2, 'D', 2],[140.0, 26, ',', 3]

BB
###Electron-electron interaction correction and magnetoresistance in tilted fields in Si-based 2D systems|A. Yu. Kuntsevich,L. A. Morgun,V. M. Pudalov###
(1009434, 1009435)
 Inparticular, by changing the tilt angle we prove experimentally that in thefield range g<missing VAR>muBB>kBT the correction depends on modulus of magnetic fieldrather than on its direction, which is expected for a system with isotropicg<missing VAR>-factor.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 2, 'D', 3],[89.0, 2, 'D', 2],[104.0, 26, ',', 3]

In
###Electron-electron interaction correction and magnetoresistance in tilted fields in Si-based 2D systems|A. Yu. Kuntsevich,L. A. Morgun,V. M. Pudalov###
(1009491, 1009491)
 In the high-field limit the correction behaves as ln (B), asexpected theoretically (Lee, Ramakrishnan, Phys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[187.0, 2, 'D', 4],[146.0, 2, 'D', 3],[48.0, 26, ',', 2]

(B)
###Electron-electron interaction correction and magnetoresistance in tilted fields in Si-based 2D systems|A. Yu. Kuntsevich,L. A. Morgun,V. M. Pudalov###
(1009511, 1009513)
 In the high-field limit the correction behaves as ln (B), asexpected theoretically (Lee, Ramakrishnan, Phys.
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[207.0, 2, 'D', 4],[166.0, 2, 'D', 3],[26.0, 26, ',', 2]

B
###Electron-electron interaction correction and magnetoresistance in tilted fields in Si-based 2D systems|A. Yu. Kuntsevich,L. A. Morgun,V. M. Pudalov###
(1009536, 1009536)
 Bbf 26, 4009 (1982)).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[232.0, 2, 'D', 6],[191.0, 2, 'D', 5],[3.0, 26, ',', 0]

Si
###Electron-electron interaction correction and magnetoresistance in tilted fields in Si-based 2D systems|A. Yu. Kuntsevich,L. A. Morgun,V. M. Pudalov###
(1009612, 1009612)
Our data prove that the diffusive electron-electron interaction correction toconductivity is not solely responsible for the huge and temperature dependentmagnetoresistance in parallel field, typically observed in Si-M<missing VAR>OSFE<missing VAR>Ts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[308.0, 2, 'D', 7],[267.0, 2, 'D', 6],[73.0, 26, ',', 1]

OSF
###Electron-electron interaction correction and magnetoresistance in tilted fields in Si-based 2D systems|A. Yu. Kuntsevich,L. A. Morgun,V. M. Pudalov###
(1009615, 1009617)
Our data prove that the diffusive electron-electron interaction correction toconductivity is not solely responsible for the huge and temperature dependentmagnetoresistance in parallel field, typically observed in Si-M<missing VAR>OSFE<missing VAR>Ts.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[311.0, 2, 'D', 7],[270.0, 2, 'D', 6],[76.0, 26, ',', 1]

Sm0.55Sr0.45MnO3
###Comparative study of magnetic and magnetotransport properties of Sm0.55Sr0.45MnO3 thin films grown on different substrates|Manoj K. Srivastava,Sandeep Singh,P. K. Siwach,Amarjeet Kaur,V. P. S. Awana,K. K. Maurya,H. K. Singh###
(1009646, 1009652)
Comparative study of magnetic and magnetotransport properties of Sm0.55Sr0.45MnO3 thin films grown on different substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.09,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.11000000000000001,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SS
###Comparative study of magnetic and magnetotransport properties of Sm0.55Sr0.45MnO3 thin films grown on different substrates|Manoj K. Srivastava,Sandeep Singh,P. K. Siwach,Amarjeet Kaur,V. P. S. Awana,K. K. Maurya,H. K. Singh###
(1009673, 1009674)
 Highly oriented polycrystalline SSM<missing VAR>O thin films deposited on single crystalsubstrates by ultrasonic nebulized spray pyrolysis have been studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Comparative study of magnetic and magnetotransport properties of Sm0.55Sr0.45MnO3 thin films grown on different substrates|Manoj K. Srivastava,Sandeep Singh,P. K. Siwach,Amarjeet Kaur,V. P. S. Awana,K. K. Maurya,H. K. Singh###
(1009676, 1009676)
 Highly oriented polycrystalline SSM<missing VAR>O thin films deposited on single crystalsubstrates by ultrasonic nebulized spray pyrolysis have been studied.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Comparative study of magnetic and magnetotransport properties of Sm0.55Sr0.45MnO3 thin films grown on different substrates|Manoj K. Srivastava,Sandeep Singh,P. K. Siwach,Amarjeet Kaur,V. P. S. Awana,K. K. Maurya,H. K. Singh###
(1009719, 1009719)
 The filmon L<missing VAR>AO is under compressive strain while L<missing VAR>SAT<missing VAR> and ST<missing VAR>O are under tensile strain.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Comparative study of magnetic and magnetotransport properties of Sm0.55Sr0.45MnO3 thin films grown on different substrates|Manoj K. Srivastava,Sandeep Singh,P. K. Siwach,Amarjeet Kaur,V. P. S. Awana,K. K. Maurya,H. K. Singh###
(1009732, 1009732)
 The filmon L<missing VAR>AO is under compressive strain while L<missing VAR>SAT<missing VAR> and ST<missing VAR>O are under tensile strain.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Comparative study of magnetic and magnetotransport properties of Sm0.55Sr0.45MnO3 thin films grown on different substrates|Manoj K. Srivastava,Sandeep Singh,P. K. Siwach,Amarjeet Kaur,V. P. S. Awana,K. K. Maurya,H. K. Singh###
(1009738, 1009738)
 The filmon L<missing VAR>AO is under compressive strain while L<missing VAR>SAT<missing VAR> and ST<missing VAR>O are under tensile strain.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Comparative study of magnetic and magnetotransport properties of Sm0.55Sr0.45MnO3 thin films grown on different substrates|Manoj K. Srivastava,Sandeep Singh,P. K. Siwach,Amarjeet Kaur,V. P. S. Awana,K. K. Maurya,H. K. Singh###
(1009740, 1009740)
 The filmon L<missing VAR>AO is under compressive strain while L<missing VAR>SAT<missing VAR> and ST<missing VAR>O are under tensile strain.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Comparative study of magnetic and magnetotransport properties of Sm0.55Sr0.45MnO3 thin films grown on different substrates|Manoj K. Srivastava,Sandeep Singh,P. K. Siwach,Amarjeet Kaur,V. P. S. Awana,K. K. Maurya,H. K. Singh###
(1009781, 1009781)
The presence of a metamagnetic state akin to cluster glass formed due tocoexisting FM<missing VAR> and antiferromagnetic/charge order (AFM<missing VAR>/CO) clusters.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Comparative study of magnetic and magnetotransport properties of Sm0.55Sr0.45MnO3 thin films grown on different substrates|Manoj K. Srivastava,Sandeep Singh,P. K. Siwach,Amarjeet Kaur,V. P. S. Awana,K. K. Maurya,H. K. Singh###
(1009794, 1009794)
The presence of a metamagnetic state akin to cluster glass formed due tocoexisting FM<missing VAR> and antiferromagnetic/charge order (AFM<missing VAR>/CO) clusters.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Comparative study of magnetic and magnetotransport properties of Sm0.55Sr0.45MnO3 thin films grown on different substrates|Manoj K. Srivastava,Sandeep Singh,P. K. Siwach,Amarjeet Kaur,V. P. S. Awana,K. K. Maurya,H. K. Singh###
(1009798, 1009798)
The presence of a metamagnetic state akin to cluster glass formed due tocoexisting FM<missing VAR> and antiferromagnetic/charge order (AFM<missing VAR>/CO) clusters.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Comparative study of magnetic and magnetotransport properties of Sm0.55Sr0.45MnO3 thin films grown on different substrates|Manoj K. Srivastava,Sandeep Singh,P. K. Siwach,Amarjeet Kaur,V. P. S. Awana,K. K. Maurya,H. K. Singh###
(1009839, 1009839)
 In the lower temperature region themagnetic field dependent isothermal resistivity also shows signature ofmetamagnetic transitions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Comparative study of magnetic and magnetotransport properties of Sm0.55Sr0.45MnO3 thin films grown on different substrates|Manoj K. Srivastava,Sandeep Singh,P. K. Siwach,Amarjeet Kaur,V. P. S. Awana,K. K. Maurya,H. K. Singh###
(1009913, 1009913)
 The observed results have been explained in terms ofthe variation of the relative fractions of the coexisting FM<missing VAR> and AFM<missing VAR>/CO phasesas a function of the substrate induced strain and oxygen vacancy inducedquenched disorder.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Comparative study of magnetic and magnetotransport properties of Sm0.55Sr0.45MnO3 thin films grown on different substrates|Manoj K. Srivastava,Sandeep Singh,P. K. Siwach,Amarjeet Kaur,V. P. S. Awana,K. K. Maurya,H. K. Singh###
(1009919, 1009919)
 The observed results have been explained in terms ofthe variation of the relative fractions of the coexisting FM<missing VAR> and AFM<missing VAR>/CO phasesas a function of the substrate induced strain and oxygen vacancy inducedquenched disorder.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CO
###Comparative study of magnetic and magnetotransport properties of Sm0.55Sr0.45MnO3 thin films grown on different substrates|Manoj K. Srivastava,Sandeep Singh,P. K. Siwach,Amarjeet Kaur,V. P. S. Awana,K. K. Maurya,H. K. Singh###
(1009922, 1009923)
 The observed results have been explained in terms ofthe variation of the relative fractions of the coexisting FM<missing VAR> and AFM<missing VAR>/CO phasesas a function of the substrate induced strain and oxygen vacancy inducedquenched disorder.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Magnetization reversal in sub-100nm magnetic tunnel junctions with ultrathin MgO barrier biased along hard axis|J. P. Cascales,D. Herranz,J. L. Sambricio,U. Ebels,J. A. Katine,F. G. Aliev###
(1009987, 1009988)
Magnetization reversal in sub-100nm magnetic tunnel junctions with ultrathin MgO barrier biased along hard axis.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFeB/MgO/CoFeB
###Magnetization reversal in sub-100nm magnetic tunnel junctions with ultrathin MgO barrier biased along hard axis|J. P. Cascales,D. Herranz,J. L. Sambricio,U. Ebels,J. A. Katine,F. G. Aliev###
(1010031, 1010040)
 We report on room temperature magnetoresistance and low frequency noise insub-100nm elliptic CoFeB/MgO/CoFeB magnetic tunnel junctions with ultrathin(0.9nm) barriers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

C
###Magnetization reversal in sub-100nm magnetic tunnel junctions with ultrathin MgO barrier biased along hard axis|J. P. Cascales,D. Herranz,J. L. Sambricio,U. Ebels,J. A. Katine,F. G. Aliev###
(1010107, 1010107)
 For magnetic fields applied along the hard axis, we observecurrent induced magnetization switching between the antiparallel and parallelalignments at D<missing VAR>C current densities as low as 4106A/cm2.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C60
###Effect of substrate temperature on the spin transport property in C60-based spin valve devices|Feng Li###
(1010306, 1010307)
Effect of substrate temperature on the spin transport property in C60-based spin valve devices.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 28.5, '%', 4]

C60
###Effect of substrate temperature on the spin transport property in C60-based spin valve devices|Feng Li###
(1010350, 1010351)
 We report the effect of the substrate temperature on the magnetoresistance(MR) of the C60-based spin valve (SV) devices with the sandwich configurationof La0.67Sr0.33MnO3 (LSMO)/C60/cobalt (Co).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 28.5, '%', 3]

(SV)
###Effect of substrate temperature on the spin transport property in C60-based spin valve devices|Feng Li###
(1010359, 1010362)
 We report the effect of the substrate temperature on the magnetoresistance(MR) of the C60-based spin valve (SV) devices with the sandwich configurationof La0.67Sr0.33MnO3 (LSMO)/C60/cobalt (Co).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 28.5, '%', 3]

La0.67Sr0.33MnO3
###Effect of substrate temperature on the spin transport property in C60-based spin valve devices|Feng Li###
(1010377, 1010383)
 We report the effect of the substrate temperature on the magnetoresistance(MR) of the C60-based spin valve (SV) devices with the sandwich configurationof La0.67Sr0.33MnO3 (LSMO)/C60/cobalt (Co).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.066,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.134,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 28.5, '%', 3]

O
###Effect of substrate temperature on the spin transport property in C60-based spin valve devices|Feng Li###
(1010389, 1010389)
 We report the effect of the substrate temperature on the magnetoresistance(MR) of the C60-based spin valve (SV) devices with the sandwich configurationof La0.67Sr0.33MnO3 (LSMO)/C60/cobalt (Co).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 28.5, '%', 3]

C60
###Effect of substrate temperature on the spin transport property in C60-based spin valve devices|Feng Li###
(1010392, 1010393)
 We report the effect of the substrate temperature on the magnetoresistance(MR) of the C60-based spin valve (SV) devices with the sandwich configurationof La0.67Sr0.33MnO3 (LSMO)/C60/cobalt (Co).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 28.5, '%', 3]

(Co)
###Effect of substrate temperature on the spin transport property in C60-based spin valve devices|Feng Li###
(1010397, 1010399)
 We report the effect of the substrate temperature on the magnetoresistance(MR) of the C60-based spin valve (SV) devices with the sandwich configurationof La0.67Sr0.33MnO3 (LSMO)/C60/cobalt (Co).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 28.5, '%', 3]

C60
###Effect of substrate temperature on the spin transport property in C60-based spin valve devices|Feng Li###
(1010404, 1010405)
 The C60 interlayer deposited atdifferent substrate temperatures resulted in four types of devices.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 28.5, '%', 2]

I
###Effect of substrate temperature on the spin transport property in C60-based spin valve devices|Feng Li###
(1010557, 1010557)
 Based on theI-V measurements, as well as SEM and AFM<missing VAR> characteristics, we have obtained thatthe higher substrate temperature can cause many pits and hollows in the organicfilm, and these pits will increase the tunneling probability of spin-polarizedcarriers from one ferromagnetic electrode to the other.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 28.5, '%', 1]

V
###Effect of substrate temperature on the spin transport property in C60-based spin valve devices|Feng Li###
(1010559, 1010559)
 Based on theI-V measurements, as well as SEM and AFM<missing VAR> characteristics, we have obtained thatthe higher substrate temperature can cause many pits and hollows in the organicfilm, and these pits will increase the tunneling probability of spin-polarizedcarriers from one ferromagnetic electrode to the other.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 28.5, '%', 1]

S
###Effect of substrate temperature on the spin transport property in C60-based spin valve devices|Feng Li###
(1010570, 1010570)
 Based on theI-V measurements, as well as SEM and AFM<missing VAR> characteristics, we have obtained thatthe higher substrate temperature can cause many pits and hollows in the organicfilm, and these pits will increase the tunneling probability of spin-polarizedcarriers from one ferromagnetic electrode to the other.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 28.5, '%', 1]

F
###Effect of substrate temperature on the spin transport property in C60-based spin valve devices|Feng Li###
(1010577, 1010577)
 Based on theI-V measurements, as well as SEM and AFM<missing VAR> characteristics, we have obtained thatthe higher substrate temperature can cause many pits and hollows in the organicfilm, and these pits will increase the tunneling probability of spin-polarizedcarriers from one ferromagnetic electrode to the other.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 28.5, '%', 1]

HgTe
###One-dimensional weak antilocalization and band Berry phases in HgTe wires|M. Mühlbauer,A. Budewitz,B. Büttner,G. Tkachov,E. M. Hankiewicz,C. Brüne,H. Buhmann,L. W. Molenkamp###
(1010688, 1010689)
One-dimensional weak antilocalization and band Berry phases in HgTe wires.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###One-dimensional weak antilocalization and band Berry phases in HgTe wires|M. Mühlbauer,A. Budewitz,B. Büttner,G. Tkachov,E. M. Hankiewicz,C. Brüne,H. Buhmann,L. W. Molenkamp###
(1010705, 1010705)
 We study the weak antilocalization (WAL) effect in the magnetoresistance ofnarrow HgTe wires fabricated in quantum wells (Q<missing VAR>Ws) with normal and invertedband ordering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HgTe
###One-dimensional weak antilocalization and band Berry phases in HgTe wires|M. Mühlbauer,A. Budewitz,B. Büttner,G. Tkachov,E. M. Hankiewicz,C. Brüne,H. Buhmann,L. W. Molenkamp###
(1010723, 1010724)
 We study the weak antilocalization (WAL) effect in the magnetoresistance ofnarrow HgTe wires fabricated in quantum wells (Q<missing VAR>Ws) with normal and invertedband ordering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###One-dimensional weak antilocalization and band Berry phases in HgTe wires|M. Mühlbauer,A. Budewitz,B. Büttner,G. Tkachov,E. M. Hankiewicz,C. Brüne,H. Buhmann,L. W. Molenkamp###
(1010771, 1010771)
 Measurements at different gate voltages indicate that the WAL<missing VAR> isonly weakly affected by Rashba spin-orbit splitting and persists when theRashba splitting is about zero.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###One-dimensional weak antilocalization and band Berry phases in HgTe wires|M. Mühlbauer,A. Budewitz,B. Büttner,G. Tkachov,E. M. Hankiewicz,C. Brüne,H. Buhmann,L. W. Molenkamp###
(1010816, 1010816)
 The WAL<missing VAR> signal in wires with normal bandordering is an order of magnitude smaller than for inverted ones.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HgTe
###One-dimensional weak antilocalization and band Berry phases in HgTe wires|M. Mühlbauer,A. Budewitz,B. Büttner,G. Tkachov,E. M. Hankiewicz,C. Brüne,H. Buhmann,L. W. Molenkamp###
(1010886, 1010887)
 Theseobservations are attributed to a Dirac-like topology of the energy bands inHgTe Q<missing VAR>Ws.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###One-dimensional weak antilocalization and band Berry phases in HgTe wires|M. Mühlbauer,A. Budewitz,B. Büttner,G. Tkachov,E. M. Hankiewicz,C. Brüne,H. Buhmann,L. W. Molenkamp###
(1010931, 1010931)
 The weaker WAL<missing VAR> for samples with anormal band structure can be explained by a non-universal Berry phase whichalways exceeds pi, the characteristic value for gapless Dirac fermions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Interfacial Magnetism in Manganite Superlattices|Kalpataru Pradhan,Arno P. Kampf###
(1011056, 1011056)
 We use a two-orbital double-exchange model including Jahn-Teller latticedistortions, superexchange interactions, and long-range Coulomb (LRC)interactions to investigate the origin of magnetically disordered interfacesbetween ferromagnetic metallic (FM) and antiferromagnetic insulating (AFI)manganites in FM<missing VAR>/AFI superlattices.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Interfacial Magnetism in Manganite Superlattices|Kalpataru Pradhan,Arno P. Kampf###
(1011086, 1011086)
 We use a two-orbital double-exchange model including Jahn-Teller latticedistortions, superexchange interactions, and long-range Coulomb (LRC)interactions to investigate the origin of magnetically disordered interfacesbetween ferromagnetic metallic (FM) and antiferromagnetic insulating (AFI)manganites in FM<missing VAR>/AFI superlattices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Interfacial Magnetism in Manganite Superlattices|Kalpataru Pradhan,Arno P. Kampf###
(1011099, 1011099)
 We use a two-orbital double-exchange model including Jahn-Teller latticedistortions, superexchange interactions, and long-range Coulomb (LRC)interactions to investigate the origin of magnetically disordered interfacesbetween ferromagnetic metallic (FM) and antiferromagnetic insulating (AFI)manganites in FM<missing VAR>/AFI superlattices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Interfacial Magnetism in Manganite Superlattices|Kalpataru Pradhan,Arno P. Kampf###
(1011107, 1011107)
 We use a two-orbital double-exchange model including Jahn-Teller latticedistortions, superexchange interactions, and long-range Coulomb (LRC)interactions to investigate the origin of magnetically disordered interfacesbetween ferromagnetic metallic (FM) and antiferromagnetic insulating (AFI)manganites in FM<missing VAR>/AFI superlattices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FI
###Interfacial Magnetism in Manganite Superlattices|Kalpataru Pradhan,Arno P. Kampf###
(1011111, 1011112)
 We use a two-orbital double-exchange model including Jahn-Teller latticedistortions, superexchange interactions, and long-range Coulomb (LRC)interactions to investigate the origin of magnetically disordered interfacesbetween ferromagnetic metallic (FM) and antiferromagnetic insulating (AFI)manganites in FM<missing VAR>/AFI superlattices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FI
###Interfacial Magnetism in Manganite Superlattices|Kalpataru Pradhan,Arno P. Kampf###
(1011130, 1011131)
 The induced magnetic moment in the AFIlayer varies non-monotonically with increasing AFI layer width as seen in theexperiment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FI
###Interfacial Magnetism in Manganite Superlattices|Kalpataru Pradhan,Arno P. Kampf###
(1011147, 1011148)
 The induced magnetic moment in the AFIlayer varies non-monotonically with increasing AFI layer width as seen in theexperiment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Interfacial Magnetism in Manganite Superlattices|Kalpataru Pradhan,Arno P. Kampf###
(1011211, 1011211)
 We provide a framework for understanding this non-monotonicbehavior which has a one-to-one correspondence with the magnetization of the FM<missing VAR>interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Interfacial Magnetism in Manganite Superlattices|Kalpataru Pradhan,Arno P. Kampf###
(1011243, 1011243)
 The obtained insights provide a basis for improving the tunnelingmagnetoresistance in FM<missing VAR>/AFI manganite superlattices by avoiding a magnetic deadlayer (MDL) in the FM<missing VAR> manganite.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FI
###Interfacial Magnetism in Manganite Superlattices|Kalpataru Pradhan,Arno P. Kampf###
(1011247, 1011248)
 The obtained insights provide a basis for improving the tunnelingmagnetoresistance in FM<missing VAR>/AFI manganite superlattices by avoiding a magnetic deadlayer (MDL) in the FM<missing VAR> manganite.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Interfacial Magnetism in Manganite Superlattices|Kalpataru Pradhan,Arno P. Kampf###
(1011277, 1011277)
 The obtained insights provide a basis for improving the tunnelingmagnetoresistance in FM<missing VAR>/AFI manganite superlattices by avoiding a magnetic deadlayer (MDL) in the FM<missing VAR> manganite.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sn
###Electron-electron scatttering in Sn-doped indium oxide thick films|Yu-Jie Zhang,Zhi-Qing Li,Juhn-Jong Lin###
(1011299, 1011299)
Electron-electron scatttering in Sn-doped indium oxide thick films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[202.0, 2, ',', 4],[274.0, 3, 'D', 5],[328.0, 3, 'orders', 6]

Sn
###Electron-electron scatttering in Sn-doped indium oxide thick films|Yu-Jie Zhang,Zhi-Qing Li,Juhn-Jong Lin###
(1011340, 1011340)
 We have measured the low-field magnetoresistances (M<missing VAR>Rs) of a series ofSn-doped indium oxide thick films in the temperature T<missing VAR> range 4--35 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 2, ',', 3],[233.0, 3, 'D', 4],[287.0, 3, 'orders', 5]

K
###Electron-electron scatttering in Sn-doped indium oxide thick films|Yu-Jie Zhang,Zhi-Qing Li,Juhn-Jong Lin###
(1011367, 1011367)
 We have measured the low-field magnetoresistances (M<missing VAR>Rs) of a series ofSn-doped indium oxide thick films in the temperature T<missing VAR> range 4--35 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 2, ',', 3],[206.0, 3, 'D', 4],[260.0, 3, 'orders', 5]

F
###Electron-electron scatttering in Sn-doped indium oxide thick films|Yu-Jie Zhang,Zhi-Qing Li,Juhn-Jong Lin###
(1011492, 1011492)
 Furthermore, at a given T<missing VAR>,1/tauvarphi varies linearly with k<missing VAR>F-5/2l<missing VAR>-3/2, where k<missing VAR>F isthe Fermi wavenumber, and l<missing VAR> is the electron elastic mean free path.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 2, ',', 0],[81.0, 3, 'D', 1],[135.0, 3, 'orders', 2]

F
###Electron-electron scatttering in Sn-doped indium oxide thick films|Yu-Jie Zhang,Zhi-Qing Li,Juhn-Jong Lin###
(1011507, 1011507)
 Furthermore, at a given T<missing VAR>,1/tauvarphi varies linearly with k<missing VAR>F-5/2l<missing VAR>-3/2, where k<missing VAR>F isthe Fermi wavenumber, and l<missing VAR> is the electron elastic mean free path.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 2, ',', 0],[66.0, 3, 'D', 1],[120.0, 3, 'orders', 2]

In
###Electron-electron interaction effects on transport through mesoscopic superconducting hybrid junctions|Arijit Saha###
(1011759, 1011759)
 In this review we are going to describe the physicsof systems containing normal metal-superconductor interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Electron-electron interaction effects on transport through mesoscopic superconducting hybrid junctions|Arijit Saha###
(1011815, 1011815)
 In particular, we describethe effects of electron electron interaction on transport through suchsuperconducting junction of multiple one-dimensional quantum wires.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Electron-electron interaction effects on transport through mesoscopic superconducting hybrid junctions|Arijit Saha###
(1011898, 1011898)
In this review, from the application point of view, we also demonstrate thepossible scenarios for production of pure spin current and large tunnellingmagnetoresistance in such hybrid junctions and analyze the influence ofelectron-electron interaction on the stability of the production of pure spincurrent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnGe
###Thin films MnGe grown on Si(111)|Josefin Engelke,Dirk Menzel,Vadim Dyadkin###
(1012011, 1012012)
Thin films MnGe grown on Si(111).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 45, 'and', 3]

MnGe
###Thin films MnGe grown on Si(111)|Josefin Engelke,Dirk Menzel,Vadim Dyadkin###
(1012024, 1012025)
 MnGe has been grown as a thin film on Si(111) substrates by molecular beamepitaxy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 45, 'and', 2]

MnSi
###Thin films MnGe grown on Si(111)|Josefin Engelke,Dirk Menzel,Vadim Dyadkin###
(1012071, 1012072)
 A 10 AA layer of MnSi was used as seedlayer in order to establishthe B20 crystal structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 45, 'and', 1]

B20
###Thin films MnGe grown on Si(111)|Josefin Engelke,Dirk Menzel,Vadim Dyadkin###
(1012093, 1012094)
 A 10 AA layer of MnSi was used as seedlayer in order to establishthe B20 crystal structure.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 45, 'and', 1]

F
###Thin films MnGe grown on Si(111)|Josefin Engelke,Dirk Menzel,Vadim Dyadkin###
(1012140, 1012140)
 Films of a thickness between 45 and 135 AA havebeen prepared and structually characterized by RHEED, AFM<missing VAR> and XRD.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 45, 'and', 0]

MnGe
###Thin films MnGe grown on Si(111)|Josefin Engelke,Dirk Menzel,Vadim Dyadkin###
(1012161, 1012162)
 Thesetechniques give evidence that MnGe forms in the cubic B20 crystal structure asislands exhibiting a very smooth surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 45, 'and', 1]

B20
###Thin films MnGe grown on Si(111)|Josefin Engelke,Dirk Menzel,Vadim Dyadkin###
(1012172, 1012173)
 Thesetechniques give evidence that MnGe forms in the cubic B20 crystal structure asislands exhibiting a very smooth surface.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 45, 'and', 1]

MnGe
###Thin films MnGe grown on Si(111)|Josefin Engelke,Dirk Menzel,Vadim Dyadkin###
(1012232, 1012233)
 A magnetic characterization reveals that theordering temperature of MnGe thin films is enhanced compared to bulk material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 45, 'and', 3]

MnSi
###Thin films MnGe grown on Si(111)|Josefin Engelke,Dirk Menzel,Vadim Dyadkin###
(1012297, 1012298)
The properties of the helical magnetic structure obtained from magnetizationand magnetoresistivity measurements are compared with films of the relatedcompound MnSi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[187.0, 45, 'and', 4]

MnGe
###Thin films MnGe grown on Si(111)|Josefin Engelke,Dirk Menzel,Vadim Dyadkin###
(1012315, 1012316)
 The much larger Dzyaloshinskii-Moriya interaction in MnGeresults in a higher rigidness of the spin helix.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, 45, 'and', 5]

N
###N-VSi-related center in non-irradiated 6H SiC nanostructure|Nikolay Bagraev,Eduard Danilovskii,Dmitrii Gets,Ekaterina Kalabukhova,Leonid Klyachkin,Anna Malyarenko,Dariya Savchenko,Bella Shanina###
(1012346, 1012346)
N-VSi-related center in non-irradiated 6H SiC nanostructure.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 6, 'H', 0],[86.0, 6, 'H', 1],[97.0, 6, 'H', 2],[153.0, 6, 'H', 2],[371.0, 14, 'N', 5]

VSi
###N-VSi-related center in non-irradiated 6H SiC nanostructure|Nikolay Bagraev,Eduard Danilovskii,Dmitrii Gets,Ekaterina Kalabukhova,Leonid Klyachkin,Anna Malyarenko,Dariya Savchenko,Bella Shanina###
(1012348, 1012349)
N-VSi-related center in non-irradiated 6H SiC nanostructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 6, 'H', 0],[83.0, 6, 'H', 1],[94.0, 6, 'H', 2],[150.0, 6, 'H', 2],[368.0, 14, 'N', 5]

SiC
###N-VSi-related center in non-irradiated 6H SiC nanostructure|Nikolay Bagraev,Eduard Danilovskii,Dmitrii Gets,Ekaterina Kalabukhova,Leonid Klyachkin,Anna Malyarenko,Dariya Savchenko,Bella Shanina###
(1012362, 1012363)
N-VSi-related center in non-irradiated 6H SiC nanostructure.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 6, 'H', 0],[69.0, 6, 'H', 1],[80.0, 6, 'H', 2],[136.0, 6, 'H', 2],[354.0, 14, 'N', 5]

SiC
###N-VSi-related center in non-irradiated 6H SiC nanostructure|Nikolay Bagraev,Eduard Danilovskii,Dmitrii Gets,Ekaterina Kalabukhova,Leonid Klyachkin,Anna Malyarenko,Dariya Savchenko,Bella Shanina###
(1012434, 1012435)
 We present the first findings of the vacancy-related centers identified bythe electron spin resonance (ESR) and electrically-detected (ED) ESR method inthe non-irradiated 6H-SiC nanostructure.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 6, 'H', 1],[2.0, 6, 'H', 0],[8.0, 6, 'H', 1],[64.0, 6, 'H', 1],[282.0, 14, 'N', 4]

SiC
###N-VSi-related center in non-irradiated 6H SiC nanostructure|Nikolay Bagraev,Eduard Danilovskii,Dmitrii Gets,Ekaterina Kalabukhova,Leonid Klyachkin,Anna Malyarenko,Dariya Savchenko,Bella Shanina###
(1012445, 1012446)
 This planar 6H-SiC nanostructurerepresents the ultra-narrow p<missing VAR>-type quantum well confined by thedelta-barriers heavily doped with boron on the surface of the n<missing VAR>-type 6H-SiC(0001) wafer.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 6, 'H', 2],[13.0, 6, 'H', 1],[2.0, 6, 'H', 0],[53.0, 6, 'H', 0],[271.0, 14, 'N', 3]

SiC
###N-VSi-related center in non-irradiated 6H SiC nanostructure|Nikolay Bagraev,Eduard Danilovskii,Dmitrii Gets,Ekaterina Kalabukhova,Leonid Klyachkin,Anna Malyarenko,Dariya Savchenko,Bella Shanina###
(1012501, 1012502)
 This planar 6H-SiC nanostructurerepresents the ultra-narrow p<missing VAR>-type quantum well confined by thedelta-barriers heavily doped with boron on the surface of the n<missing VAR>-type 6H-SiC(0001) wafer.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 6, 'H', 2],[69.0, 6, 'H', 1],[58.0, 6, 'H', 0],[2.0, 6, 'H', 0],[215.0, 14, 'N', 3]

S
###N-VSi-related center in non-irradiated 6H SiC nanostructure|Nikolay Bagraev,Eduard Danilovskii,Dmitrii Gets,Ekaterina Kalabukhova,Leonid Klyachkin,Anna Malyarenko,Dariya Savchenko,Bella Shanina###
(1012517, 1012517)
 The EDESR<missing VAR> method by measuring the only magnetoresistance of the6H SiC nanostructure under the high frequency generation from thedelta-barriers appears to allow the identification of the silicon vacancycenters as well as the triplet center with spin state S1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 6, 'H', 3],[85.0, 6, 'H', 2],[74.0, 6, 'H', 1],[18.0, 6, 'H', 1],[200.0, 14, 'N', 2]

H
###N-VSi-related center in non-irradiated 6H SiC nanostructure|Nikolay Bagraev,Eduard Danilovskii,Dmitrii Gets,Ekaterina Kalabukhova,Leonid Klyachkin,Anna Malyarenko,Dariya Savchenko,Bella Shanina###
(1012538, 1012538)
 The EDESR<missing VAR> method by measuring the only magnetoresistance of the6H SiC nanostructure under the high frequency generation from thedelta-barriers appears to allow the identification of the silicon vacancycenters as well as the triplet center with spin state S1.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 6, 'H', 3],[106.0, 6, 'H', 2],[95.0, 6, 'H', 1],[39.0, 6, 'H', 1],[179.0, 14, 'N', 2]

SiC
###N-VSi-related center in non-irradiated 6H SiC nanostructure|Nikolay Bagraev,Eduard Danilovskii,Dmitrii Gets,Ekaterina Kalabukhova,Leonid Klyachkin,Anna Malyarenko,Dariya Savchenko,Bella Shanina###
(1012540, 1012541)
 The EDESR<missing VAR> method by measuring the only magnetoresistance of the6H SiC nanostructure under the high frequency generation from thedelta-barriers appears to allow the identification of the silicon vacancycenters as well as the triplet center with spin state S1.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[180.0, 6, 'H', 3],[108.0, 6, 'H', 2],[97.0, 6, 'H', 1],[41.0, 6, 'H', 1],[176.0, 14, 'N', 2]

S1
###N-VSi-related center in non-irradiated 6H SiC nanostructure|Nikolay Bagraev,Eduard Danilovskii,Dmitrii Gets,Ekaterina Kalabukhova,Leonid Klyachkin,Anna Malyarenko,Dariya Savchenko,Bella Shanina###
(1012603, 1012604)
 The EDESR<missing VAR> method by measuring the only magnetoresistance of the6H SiC nanostructure under the high frequency generation from thedelta-barriers appears to allow the identification of the silicon vacancycenters as well as the triplet center with spin state S1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[243.0, 6, 'H', 3],[171.0, 6, 'H', 2],[160.0, 6, 'H', 1],[104.0, 6, 'H', 1],[113.0, 14, 'N', 2]

S
###N-VSi-related center in non-irradiated 6H SiC nanostructure|Nikolay Bagraev,Eduard Danilovskii,Dmitrii Gets,Ekaterina Kalabukhova,Leonid Klyachkin,Anna Malyarenko,Dariya Savchenko,Bella Shanina###
(1012698, 1012698)
 Thehyperfine (hf) lines in the ESR and EDESR<missing VAR> spectra originating from the hfinteraction with the 14N nucleus allow us to attribute this triplet center tothe N-VSi defect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[338.0, 6, 'H', 5],[266.0, 6, 'H', 4],[255.0, 6, 'H', 3],[199.0, 6, 'H', 3],[19.0, 14, 'N', 0]

N
###N-VSi-related center in non-irradiated 6H SiC nanostructure|Nikolay Bagraev,Eduard Danilovskii,Dmitrii Gets,Ekaterina Kalabukhova,Leonid Klyachkin,Anna Malyarenko,Dariya Savchenko,Bella Shanina###
(1012740, 1012740)
 Thehyperfine (hf) lines in the ESR and EDESR<missing VAR> spectra originating from the hfinteraction with the 14N nucleus allow us to attribute this triplet center tothe N-VSi defect.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[380.0, 6, 'H', 5],[308.0, 6, 'H', 4],[297.0, 6, 'H', 3],[241.0, 6, 'H', 3],[23.0, 14, 'N', 0]

VSi
###N-VSi-related center in non-irradiated 6H SiC nanostructure|Nikolay Bagraev,Eduard Danilovskii,Dmitrii Gets,Ekaterina Kalabukhova,Leonid Klyachkin,Anna Malyarenko,Dariya Savchenko,Bella Shanina###
(1012742, 1012743)
 Thehyperfine (hf) lines in the ESR and EDESR<missing VAR> spectra originating from the hfinteraction with the 14N nucleus allow us to attribute this triplet center tothe N-VSi defect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[382.0, 6, 'H', 5],[310.0, 6, 'H', 4],[299.0, 6, 'H', 3],[243.0, 6, 'H', 3],[25.0, 14, 'N', 0]

Bi2Se3/Bi2Te3
###Demonstration of surface transport in a hybrid Bi2Se3/Bi2Te3 heterostructure|Yanfei Zhao,Cui-Zu Chang,Ying Jiang,Ashley DaSilva,Yi Sun,Huichao Wang,Ying Xing,Yong Wang,Ke He,Xucun Ma,Qi-Kun Xue,Jian Wang###
(1012770, 1012778)
Demonstration of surface transport in a hybrid Bi2Se3/Bi2Te3 heterostructure.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[81.0, 19, 'QLs', 2],[102.0, 20, 'QLs', 2],[110.0, 20, 'QLs', 2],[193.0, 1, 'QL', 4],[201.0, 19, 'QLs', 4],[226.0, 20, 'QLs', 4],[245.0, 20, 'QLs', 4],[360.0, 19, 'QLs', 6]

In
###Demonstration of surface transport in a hybrid Bi2Se3/Bi2Te3 heterostructure|Yanfei Zhao,Cui-Zu Chang,Ying Jiang,Ashley DaSilva,Yi Sun,Huichao Wang,Ying Xing,Yong Wang,Ke He,Xucun Ma,Qi-Kun Xue,Jian Wang###
(1012783, 1012783)
 In spite of much work on topological insulators (T<missing VAR>Is), systematic experimentsfor T<missing VAR>I/T<missing VAR>I heterostructures remain absent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 19, 'QLs', 1],[97.0, 20, 'QLs', 1],[105.0, 20, 'QLs', 1],[188.0, 1, 'QL', 3],[196.0, 19, 'QLs', 3],[221.0, 20, 'QLs', 3],[240.0, 20, 'QLs', 3],[355.0, 19, 'QLs', 5]

I
###Demonstration of surface transport in a hybrid Bi2Se3/Bi2Te3 heterostructure|Yanfei Zhao,Cui-Zu Chang,Ying Jiang,Ashley DaSilva,Yi Sun,Huichao Wang,Ying Xing,Yong Wang,Ke He,Xucun Ma,Qi-Kun Xue,Jian Wang###
(1012813, 1012813)
 In spite of much work on topological insulators (T<missing VAR>Is), systematic experimentsfor T<missing VAR>I/T<missing VAR>I heterostructures remain absent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 19, 'QLs', 1],[67.0, 20, 'QLs', 1],[75.0, 20, 'QLs', 1],[158.0, 1, 'QL', 3],[166.0, 19, 'QLs', 3],[191.0, 20, 'QLs', 3],[210.0, 20, 'QLs', 3],[325.0, 19, 'QLs', 5]

I
###Demonstration of surface transport in a hybrid Bi2Se3/Bi2Te3 heterostructure|Yanfei Zhao,Cui-Zu Chang,Ying Jiang,Ashley DaSilva,Yi Sun,Huichao Wang,Ying Xing,Yong Wang,Ke He,Xucun Ma,Qi-Kun Xue,Jian Wang###
(1012816, 1012816)
 In spite of much work on topological insulators (T<missing VAR>Is), systematic experimentsfor T<missing VAR>I/T<missing VAR>I heterostructures remain absent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 19, 'QLs', 1],[64.0, 20, 'QLs', 1],[72.0, 20, 'QLs', 1],[155.0, 1, 'QL', 3],[163.0, 19, 'QLs', 3],[188.0, 20, 'QLs', 3],[207.0, 20, 'QLs', 3],[322.0, 19, 'QLs', 5]

Bi2Se3
###Demonstration of surface transport in a hybrid Bi2Se3/Bi2Te3 heterostructure|Yanfei Zhao,Cui-Zu Chang,Ying Jiang,Ashley DaSilva,Yi Sun,Huichao Wang,Ying Xing,Yong Wang,Ke He,Xucun Ma,Qi-Kun Xue,Jian Wang###
(1012853, 1012856)
 We grow a high qualityheterostructure containing single quintuple layer (QL) of Bi2Se3 on 19 QLs ofBi2Te3 and compare its transport properties with 20 QLs Bi2Se3 and 20 QLsBi2Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 19, 'QLs', 0],[24.0, 20, 'QLs', 0],[32.0, 20, 'QLs', 0],[115.0, 1, 'QL', 2],[123.0, 19, 'QLs', 2],[148.0, 20, 'QLs', 2],[167.0, 20, 'QLs', 2],[282.0, 19, 'QLs', 4]

Bi2Te3
###Demonstration of surface transport in a hybrid Bi2Se3/Bi2Te3 heterostructure|Yanfei Zhao,Cui-Zu Chang,Ying Jiang,Ashley DaSilva,Yi Sun,Huichao Wang,Ying Xing,Yong Wang,Ke He,Xucun Ma,Qi-Kun Xue,Jian Wang###
(1012864, 1012867)
 We grow a high qualityheterostructure containing single quintuple layer (QL) of Bi2Se3 on 19 QLs ofBi2Te3 and compare its transport properties with 20 QLs Bi2Se3 and 20 QLsBi2Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 19, 'QLs', 0],[13.0, 20, 'QLs', 0],[21.0, 20, 'QLs', 0],[104.0, 1, 'QL', 2],[112.0, 19, 'QLs', 2],[137.0, 20, 'QLs', 2],[156.0, 20, 'QLs', 2],[271.0, 19, 'QLs', 4]

Bi2Se3
###Demonstration of surface transport in a hybrid Bi2Se3/Bi2Te3 heterostructure|Yanfei Zhao,Cui-Zu Chang,Ying Jiang,Ashley DaSilva,Yi Sun,Huichao Wang,Ying Xing,Yong Wang,Ke He,Xucun Ma,Qi-Kun Xue,Jian Wang###
(1012882, 1012885)
 We grow a high qualityheterostructure containing single quintuple layer (QL) of Bi2Se3 on 19 QLs ofBi2Te3 and compare its transport properties with 20 QLs Bi2Se3 and 20 QLsBi2Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 19, 'QLs', 0],[2.0, 20, 'QLs', 0],[3.0, 20, 'QLs', 0],[86.0, 1, 'QL', 2],[94.0, 19, 'QLs', 2],[119.0, 20, 'QLs', 2],[138.0, 20, 'QLs', 2],[253.0, 19, 'QLs', 4]

Bi2Te3
###Demonstration of surface transport in a hybrid Bi2Se3/Bi2Te3 heterostructure|Yanfei Zhao,Cui-Zu Chang,Ying Jiang,Ashley DaSilva,Yi Sun,Huichao Wang,Ying Xing,Yong Wang,Ke He,Xucun Ma,Qi-Kun Xue,Jian Wang###
(1012891, 1012894)
 We grow a high qualityheterostructure containing single quintuple layer (QL) of Bi2Se3 on 19 QLs ofBi2Te3 and compare its transport properties with 20 QLs Bi2Se3 and 20 QLsBi2Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 19, 'QLs', 0],[11.0, 20, 'QLs', 0],[3.0, 20, 'QLs', 0],[77.0, 1, 'QL', 2],[85.0, 19, 'QLs', 2],[110.0, 20, 'QLs', 2],[129.0, 20, 'QLs', 2],[244.0, 19, 'QLs', 4]

In
###Demonstration of surface transport in a hybrid Bi2Se3/Bi2Te3 heterostructure|Yanfei Zhao,Cui-Zu Chang,Ying Jiang,Ashley DaSilva,Yi Sun,Huichao Wang,Ying Xing,Yong Wang,Ke He,Xucun Ma,Qi-Kun Xue,Jian Wang###
(1012935, 1012935)
 In situ angle-resolved photoemission spectroscopy(ARPES) provides direct evidence that the surface state of 1 QL Bi2Se3 / 19 QLsBi2Te3 heterostructure is similar to the surface state of the 20 QLs Bi2Se3 anddifferent with that of the 20 QLs Bi2Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 19, 'QLs', 2],[55.0, 20, 'QLs', 2],[47.0, 20, 'QLs', 2],[36.0, 1, 'QL', 0],[44.0, 19, 'QLs', 0],[69.0, 20, 'QLs', 0],[88.0, 20, 'QLs', 0],[203.0, 19, 'QLs', 2]

S
###Demonstration of surface transport in a hybrid Bi2Se3/Bi2Te3 heterostructure|Yanfei Zhao,Cui-Zu Chang,Ying Jiang,Ashley DaSilva,Yi Sun,Huichao Wang,Ying Xing,Yong Wang,Ke He,Xucun Ma,Qi-Kun Xue,Jian Wang###
(1012953, 1012953)
 In situ angle-resolved photoemission spectroscopy(ARPES) provides direct evidence that the surface state of 1 QL Bi2Se3 / 19 QLsBi2Te3 heterostructure is similar to the surface state of the 20 QLs Bi2Se3 anddifferent with that of the 20 QLs Bi2Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 19, 'QLs', 2],[73.0, 20, 'QLs', 2],[65.0, 20, 'QLs', 2],[18.0, 1, 'QL', 0],[26.0, 19, 'QLs', 0],[51.0, 20, 'QLs', 0],[70.0, 20, 'QLs', 0],[185.0, 19, 'QLs', 2]

Bi2Se3
###Demonstration of surface transport in a hybrid Bi2Se3/Bi2Te3 heterostructure|Yanfei Zhao,Cui-Zu Chang,Ying Jiang,Ashley DaSilva,Yi Sun,Huichao Wang,Ying Xing,Yong Wang,Ke He,Xucun Ma,Qi-Kun Xue,Jian Wang###
(1012973, 1012976)
 In situ angle-resolved photoemission spectroscopy(ARPES) provides direct evidence that the surface state of 1 QL Bi2Se3 / 19 QLsBi2Te3 heterostructure is similar to the surface state of the 20 QLs Bi2Se3 anddifferent with that of the 20 QLs Bi2Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 19, 'QLs', 2],[93.0, 20, 'QLs', 2],[85.0, 20, 'QLs', 2],[2.0, 1, 'QL', 0],[3.0, 19, 'QLs', 0],[28.0, 20, 'QLs', 0],[47.0, 20, 'QLs', 0],[162.0, 19, 'QLs', 2]

Bi2Te3
###Demonstration of surface transport in a hybrid Bi2Se3/Bi2Te3 heterostructure|Yanfei Zhao,Cui-Zu Chang,Ying Jiang,Ashley DaSilva,Yi Sun,Huichao Wang,Ying Xing,Yong Wang,Ke He,Xucun Ma,Qi-Kun Xue,Jian Wang###
(1012982, 1012985)
 In situ angle-resolved photoemission spectroscopy(ARPES) provides direct evidence that the surface state of 1 QL Bi2Se3 / 19 QLsBi2Te3 heterostructure is similar to the surface state of the 20 QLs Bi2Se3 anddifferent with that of the 20 QLs Bi2Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 19, 'QLs', 2],[102.0, 20, 'QLs', 2],[94.0, 20, 'QLs', 2],[11.0, 1, 'QL', 0],[3.0, 19, 'QLs', 0],[19.0, 20, 'QLs', 0],[38.0, 20, 'QLs', 0],[153.0, 19, 'QLs', 2]

Bi2Se3
###Demonstration of surface transport in a hybrid Bi2Se3/Bi2Te3 heterostructure|Yanfei Zhao,Cui-Zu Chang,Ying Jiang,Ashley DaSilva,Yi Sun,Huichao Wang,Ying Xing,Yong Wang,Ke He,Xucun Ma,Qi-Kun Xue,Jian Wang###
(1013006, 1013009)
 In situ angle-resolved photoemission spectroscopy(ARPES) provides direct evidence that the surface state of 1 QL Bi2Se3 / 19 QLsBi2Te3 heterostructure is similar to the surface state of the 20 QLs Bi2Se3 anddifferent with that of the 20 QLs Bi2Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 19, 'QLs', 2],[126.0, 20, 'QLs', 2],[118.0, 20, 'QLs', 2],[35.0, 1, 'QL', 0],[27.0, 19, 'QLs', 0],[2.0, 20, 'QLs', 0],[14.0, 20, 'QLs', 0],[129.0, 19, 'QLs', 2]

Bi2Te3
###Demonstration of surface transport in a hybrid Bi2Se3/Bi2Te3 heterostructure|Yanfei Zhao,Cui-Zu Chang,Ying Jiang,Ashley DaSilva,Yi Sun,Huichao Wang,Ying Xing,Yong Wang,Ke He,Xucun Ma,Qi-Kun Xue,Jian Wang###
(1013025, 1013028)
 In situ angle-resolved photoemission spectroscopy(ARPES) provides direct evidence that the surface state of 1 QL Bi2Se3 / 19 QLsBi2Te3 heterostructure is similar to the surface state of the 20 QLs Bi2Se3 anddifferent with that of the 20 QLs Bi2Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 19, 'QLs', 2],[145.0, 20, 'QLs', 2],[137.0, 20, 'QLs', 2],[54.0, 1, 'QL', 0],[46.0, 19, 'QLs', 0],[21.0, 20, 'QLs', 0],[2.0, 20, 'QLs', 0],[110.0, 19, 'QLs', 2]

In
###Demonstration of surface transport in a hybrid Bi2Se3/Bi2Te3 heterostructure|Yanfei Zhao,Cui-Zu Chang,Ying Jiang,Ashley DaSilva,Yi Sun,Huichao Wang,Ying Xing,Yong Wang,Ke He,Xucun Ma,Qi-Kun Xue,Jian Wang###
(1013031, 1013031)
 In ex situ transport measurements,the observed linear magnetoresistance (MR) and weak antilocalization (WAL) ofthe hybrid heterostructure are similar to that of the pure Bi2Se3 film and notthe Bi2Te3 film.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[172.0, 19, 'QLs', 3],[151.0, 20, 'QLs', 3],[143.0, 20, 'QLs', 3],[60.0, 1, 'QL', 1],[52.0, 19, 'QLs', 1],[27.0, 20, 'QLs', 1],[8.0, 20, 'QLs', 1],[107.0, 19, 'QLs', 1]

W
###Demonstration of surface transport in a hybrid Bi2Se3/Bi2Te3 heterostructure|Yanfei Zhao,Cui-Zu Chang,Ying Jiang,Ashley DaSilva,Yi Sun,Huichao Wang,Ying Xing,Yong Wang,Ke He,Xucun Ma,Qi-Kun Xue,Jian Wang###
(1013063, 1013063)
 In ex situ transport measurements,the observed linear magnetoresistance (MR) and weak antilocalization (WAL) ofthe hybrid heterostructure are similar to that of the pure Bi2Se3 film and notthe Bi2Te3 film.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[204.0, 19, 'QLs', 3],[183.0, 20, 'QLs', 3],[175.0, 20, 'QLs', 3],[92.0, 1, 'QL', 1],[84.0, 19, 'QLs', 1],[59.0, 20, 'QLs', 1],[40.0, 20, 'QLs', 1],[75.0, 19, 'QLs', 1]

Bi2Se3
###Demonstration of surface transport in a hybrid Bi2Se3/Bi2Te3 heterostructure|Yanfei Zhao,Cui-Zu Chang,Ying Jiang,Ashley DaSilva,Yi Sun,Huichao Wang,Ying Xing,Yong Wang,Ke He,Xucun Ma,Qi-Kun Xue,Jian Wang###
(1013091, 1013094)
 In ex situ transport measurements,the observed linear magnetoresistance (MR) and weak antilocalization (WAL) ofthe hybrid heterostructure are similar to that of the pure Bi2Se3 film and notthe Bi2Te3 film.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[232.0, 19, 'QLs', 3],[211.0, 20, 'QLs', 3],[203.0, 20, 'QLs', 3],[120.0, 1, 'QL', 1],[112.0, 19, 'QLs', 1],[87.0, 20, 'QLs', 1],[68.0, 20, 'QLs', 1],[44.0, 19, 'QLs', 1]

Bi2Te3
###Demonstration of surface transport in a hybrid Bi2Se3/Bi2Te3 heterostructure|Yanfei Zhao,Cui-Zu Chang,Ying Jiang,Ashley DaSilva,Yi Sun,Huichao Wang,Ying Xing,Yong Wang,Ke He,Xucun Ma,Qi-Kun Xue,Jian Wang###
(1013105, 1013108)
 In ex situ transport measurements,the observed linear magnetoresistance (MR) and weak antilocalization (WAL) ofthe hybrid heterostructure are similar to that of the pure Bi2Se3 film and notthe Bi2Te3 film.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[246.0, 19, 'QLs', 3],[225.0, 20, 'QLs', 3],[217.0, 20, 'QLs', 3],[134.0, 1, 'QL', 1],[126.0, 19, 'QLs', 1],[101.0, 20, 'QLs', 1],[82.0, 20, 'QLs', 1],[30.0, 19, 'QLs', 1]

Bi2Se3
###Demonstration of surface transport in a hybrid Bi2Se3/Bi2Te3 heterostructure|Yanfei Zhao,Cui-Zu Chang,Ying Jiang,Ashley DaSilva,Yi Sun,Huichao Wang,Ying Xing,Yong Wang,Ke He,Xucun Ma,Qi-Kun Xue,Jian Wang###
(1013123, 1013126)
 This suggests that the single Bi2Se3 QL layer on top of 19 QLsBi2Te3 dominates its transport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[264.0, 19, 'QLs', 4],[243.0, 20, 'QLs', 4],[235.0, 20, 'QLs', 4],[152.0, 1, 'QL', 2],[144.0, 19, 'QLs', 2],[119.0, 20, 'QLs', 2],[100.0, 20, 'QLs', 2],[12.0, 19, 'QLs', 0]

Bi2Te3
###Demonstration of surface transport in a hybrid Bi2Se3/Bi2Te3 heterostructure|Yanfei Zhao,Cui-Zu Chang,Ying Jiang,Ashley DaSilva,Yi Sun,Huichao Wang,Ying Xing,Yong Wang,Ke He,Xucun Ma,Qi-Kun Xue,Jian Wang###
(1013141, 1013144)
 This suggests that the single Bi2Se3 QL layer on top of 19 QLsBi2Te3 dominates its transport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[282.0, 19, 'QLs', 4],[261.0, 20, 'QLs', 4],[253.0, 20, 'QLs', 4],[170.0, 1, 'QL', 2],[162.0, 19, 'QLs', 2],[137.0, 20, 'QLs', 2],[118.0, 20, 'QLs', 2],[3.0, 19, 'QLs', 0]

In
###The detection of Kondo effect in the resistivity of graphene: artifacts and strategies|Johannes Jobst,Ferdinand Kisslinger,Heiko B. Weber###
(1013259, 1013259)
 Inorder to disentangle these contributions, a refined analysis of themagnetoconductance and the magnetoresistance is introduced.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La2
###Effect of "dipolar-biasing" on the tunability of tunneling magnetoresistance in transition metal oxide systems|P. Anil Kumar,D. D. Sarma###
(1013545, 1013546)
 We observe an unusual tunneling magnetoresistance (TMR) phenomenon in acomposite of La2/3Sr1/3MnO3 with CoFe2O4 where the TMRversus applied magnetic field loop suggests a negative coercive field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr1
###Effect of "dipolar-biasing" on the tunability of tunneling magnetoresistance in transition metal oxide systems|P. Anil Kumar,D. D. Sarma###
(1013549, 1013550)
 We observe an unusual tunneling magnetoresistance (TMR) phenomenon in acomposite of La2/3Sr1/3MnO3 with CoFe2O4 where the TMRversus applied magnetic field loop suggests a negative coercive field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnO3
###Effect of "dipolar-biasing" on the tunability of tunneling magnetoresistance in transition metal oxide systems|P. Anil Kumar,D. D. Sarma###
(1013553, 1013555)
 We observe an unusual tunneling magnetoresistance (TMR) phenomenon in acomposite of La2/3Sr1/3MnO3 with CoFe2O4 where the TMRversus applied magnetic field loop suggests a negative coercive field.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFe2O4
###Effect of "dipolar-biasing" on the tunability of tunneling magnetoresistance in transition metal oxide systems|P. Anil Kumar,D. D. Sarma###
(1013559, 1013563)
 We observe an unusual tunneling magnetoresistance (TMR) phenomenon in acomposite of La2/3Sr1/3MnO3 with CoFe2O4 where the TMRversus applied magnetic field loop suggests a negative coercive field.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La2
###Effect of "dipolar-biasing" on the tunability of tunneling magnetoresistance in transition metal oxide systems|P. Anil Kumar,D. D. Sarma###
(1013614, 1013615)
Tracing its origin back to a dipolar-biasing of La2/3Sr1/3MnO3by CoFe2O4, we show that the TMR of even a single composite can betuned continuously so that the resistance peak or the highest sensitivity ofthe TMR can be positioned anywhere on the magnetic field axis with a suitablemagnetic history of the sample.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr1
###Effect of "dipolar-biasing" on the tunability of tunneling magnetoresistance in transition metal oxide systems|P. Anil Kumar,D. D. Sarma###
(1013618, 1013619)
Tracing its origin back to a dipolar-biasing of La2/3Sr1/3MnO3by CoFe2O4, we show that the TMR of even a single composite can betuned continuously so that the resistance peak or the highest sensitivity ofthe TMR can be positioned anywhere on the magnetic field axis with a suitablemagnetic history of the sample.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnO3
###Effect of "dipolar-biasing" on the tunability of tunneling magnetoresistance in transition metal oxide systems|P. Anil Kumar,D. D. Sarma###
(1013622, 1013624)
Tracing its origin back to a dipolar-biasing of La2/3Sr1/3MnO3by CoFe2O4, we show that the TMR of even a single composite can betuned continuously so that the resistance peak or the highest sensitivity ofthe TMR can be positioned anywhere on the magnetic field axis with a suitablemagnetic history of the sample.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFe2O4
###Effect of "dipolar-biasing" on the tunability of tunneling magnetoresistance in transition metal oxide systems|P. Anil Kumar,D. D. Sarma###
(1013629, 1013633)
Tracing its origin back to a dipolar-biasing of La2/3Sr1/3MnO3by CoFe2O4, we show that the TMR of even a single composite can betuned continuously so that the resistance peak or the highest sensitivity ofthe TMR can be positioned anywhere on the magnetic field axis with a suitablemagnetic history of the sample.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Au
###Interface Effects on Tunneling Magnetoresistance in Organic Spintronics with Flexible Amine-Au Links|Narjes Gorjizadeh,Su Ying Quek###
(1013800, 1013800)
Interface Effects on Tunneling Magnetoresistance in Organic Spintronics with Flexible Amine-Au Links.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Au
###Interface Effects on Tunneling Magnetoresistance in Organic Spintronics with Flexible Amine-Au Links|Narjes Gorjizadeh,Su Ying Quek###
(1013889, 1013889)
 A key breakthrough in molecular electronicswas the discovery of amine-Au link groups that give reproducible conductance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Au
###Interface Effects on Tunneling Magnetoresistance in Organic Spintronics with Flexible Amine-Au Links|Narjes Gorjizadeh,Su Ying Quek###
(1013922, 1013922)
Using first principles calculations, we predict that amine-Au links giveimproved reproducibility in organic spintronics junctions with Au-covered Feleads.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Au
###Interface Effects on Tunneling Magnetoresistance in Organic Spintronics with Flexible Amine-Au Links|Narjes Gorjizadeh,Su Ying Quek###
(1013943, 1013943)
Using first principles calculations, we predict that amine-Au links giveimproved reproducibility in organic spintronics junctions with Au-covered Feleads.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Interface Effects on Tunneling Magnetoresistance in Organic Spintronics with Flexible Amine-Au Links|Narjes Gorjizadeh,Su Ying Quek###
(1013947, 1013947)
Using first principles calculations, we predict that amine-Au links giveimproved reproducibility in organic spintronics junctions with Au-covered Feleads.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Au
###Interface Effects on Tunneling Magnetoresistance in Organic Spintronics with Flexible Amine-Au Links|Narjes Gorjizadeh,Su Ying Quek###
(1013955, 1013955)
 The Au layers allow only states with sp character to tunnel into themolecule, and the flexibility of amine-Au links results in a narrow range ofTMR for fixed number of Au layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Au
###Interface Effects on Tunneling Magnetoresistance in Organic Spintronics with Flexible Amine-Au Links|Narjes Gorjizadeh,Su Ying Quek###
(1013993, 1013993)
 The Au layers allow only states with sp character to tunnel into themolecule, and the flexibility of amine-Au links results in a narrow range ofTMR for fixed number of Au layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Au
###Interface Effects on Tunneling Magnetoresistance in Organic Spintronics with Flexible Amine-Au Links|Narjes Gorjizadeh,Su Ying Quek###
(1014022, 1014022)
 The Au layers allow only states with sp character to tunnel into themolecule, and the flexibility of amine-Au links results in a narrow range ofTMR for fixed number of Au layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Au
###Interface Effects on Tunneling Magnetoresistance in Organic Spintronics with Flexible Amine-Au Links|Narjes Gorjizadeh,Su Ying Quek###
(1014033, 1014033)
 Even as the Au thickness changes, TMRremains positive as long as the number of Au layers is the same on both sidesof the junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Au
###Interface Effects on Tunneling Magnetoresistance in Organic Spintronics with Flexible Amine-Au Links|Narjes Gorjizadeh,Su Ying Quek###
(1014061, 1014061)
 Even as the Au thickness changes, TMRremains positive as long as the number of Au layers is the same on both sidesof the junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Au
###Interface Effects on Tunneling Magnetoresistance in Organic Spintronics with Flexible Amine-Au Links|Narjes Gorjizadeh,Su Ying Quek###
(1014093, 1014093)
 Since the number of Au layers on Fe surfaces or Fenanoparticles can now be experimentally controlled, amine-Au links provide aroute towards robust TMR in organic spintronics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Interface Effects on Tunneling Magnetoresistance in Organic Spintronics with Flexible Amine-Au Links|Narjes Gorjizadeh,Su Ying Quek###
(1014099, 1014099)
 Since the number of Au layers on Fe surfaces or Fenanoparticles can now be experimentally controlled, amine-Au links provide aroute towards robust TMR in organic spintronics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Interface Effects on Tunneling Magnetoresistance in Organic Spintronics with Flexible Amine-Au Links|Narjes Gorjizadeh,Su Ying Quek###
(1014105, 1014105)
 Since the number of Au layers on Fe surfaces or Fenanoparticles can now be experimentally controlled, amine-Au links provide aroute towards robust TMR in organic spintronics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Au
###Interface Effects on Tunneling Magnetoresistance in Organic Spintronics with Flexible Amine-Au Links|Narjes Gorjizadeh,Su Ying Quek###
(1014123, 1014123)
 Since the number of Au layers on Fe surfaces or Fenanoparticles can now be experimentally controlled, amine-Au links provide aroute towards robust TMR in organic spintronics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrFe2As2
###Large low-temperature magnetoresistance in SrFe2As2 single crystals|S. V. Chong,G. V. M. Williams,J. Kennedy,F. Fang,J. L. Tallon,K. Kadowaki###
(1014167, 1014171)
Large low-temperature magnetoresistance in SrFe2As2 single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0.4,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 1600, '%', 1],[60.0, 1300, '%', 1],[152.0, 2, 'bands', 2],[239.0, 20, 'K', 3]

SrFe2As2
###Large low-temperature magnetoresistance in SrFe2As2 single crystals|S. V. Chong,G. V. M. Williams,J. Kennedy,F. Fang,J. L. Tallon,K. Kadowaki###
(1014219, 1014223)
 We present the first report on a large low-temperature magnetoresistance (MR)of more than 1600% in a SrFe2As2 single crystal and 1300% in a low-energy Caion-implanted SrFe2As2 single crystal that occurs before the emergence ofcrystallographic strain-induced bulk superconductivity arising from a sampleaging effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0.4,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 1600, '%', 0],[8.0, 1300, '%', 0],[100.0, 2, 'bands', 1],[187.0, 20, 'K', 2]

Ca
###Large low-temperature magnetoresistance in SrFe2As2 single crystals|S. V. Chong,G. V. M. Williams,J. Kennedy,F. Fang,J. L. Tallon,K. Kadowaki###
(1014242, 1014242)
 We present the first report on a large low-temperature magnetoresistance (MR)of more than 1600% in a SrFe2As2 single crystal and 1300% in a low-energy Caion-implanted SrFe2As2 single crystal that occurs before the emergence ofcrystallographic strain-induced bulk superconductivity arising from a sampleaging effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 1600, '%', 0],[11.0, 1300, '%', 0],[81.0, 2, 'bands', 1],[168.0, 20, 'K', 2]

SrFe2As2
###Large low-temperature magnetoresistance in SrFe2As2 single crystals|S. V. Chong,G. V. M. Williams,J. Kennedy,F. Fang,J. L. Tallon,K. Kadowaki###
(1014249, 1014253)
 We present the first report on a large low-temperature magnetoresistance (MR)of more than 1600% in a SrFe2As2 single crystal and 1300% in a low-energy Caion-implanted SrFe2As2 single crystal that occurs before the emergence ofcrystallographic strain-induced bulk superconductivity arising from a sampleaging effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0.4,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 1600, '%', 0],[18.0, 1300, '%', 0],[70.0, 2, 'bands', 1],[157.0, 20, 'K', 2]

In
###Large low-temperature magnetoresistance in SrFe2As2 single crystals|S. V. Chong,G. V. M. Williams,J. Kennedy,F. Fang,J. L. Tallon,K. Kadowaki###
(1014296, 1014296)
 In accordance to band structure calculations from literature,which consitently show more than 2 bands are involved in the transport, we havemodeled this large MR at high fields using a 3-carrier scenario rather thansolely on quantum linear MR model generally used to explain the MR iniron-pnictides.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 1600, '%', 1],[65.0, 1300, '%', 1],[27.0, 2, 'bands', 0],[114.0, 20, 'K', 1]

At
###Large low-temperature magnetoresistance in SrFe2As2 single crystals|S. V. Chong,G. V. M. Williams,J. Kennedy,F. Fang,J. L. Tallon,K. Kadowaki###
(1014405, 1014405)
 At and below 20 K the large MR may be due to 3-carriertransport in an inhomogeneous state where there are superconducting andmetallic regions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[193.0, 1600, '%', 2],[174.0, 1300, '%', 2],[82.0, 2, 'bands', 1],[5.0, 20, 'K', 0]

YBa2Cu3O7-d
###Unusual magneto-transport of YBa2Cu3O7-d films due to the interplay of anisotropy, random disorder and nanoscale periodic pinning|J. Trastoy,V. Rouco,C. Ulysse,R. Bernard,A. Palau,T. Puig,G. Faini,J. Lesueur,J. Briatico,J. E. Villegas###
(1014474, 1014482)
Unusual magneto-transport of YBa2Cu3O7-d films due to the interplay of anisotropy, random disorder and nanoscale periodic pinning.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[249.0, 3, 'D', 4]

YBa2Cu3O7-d
###Unusual magneto-transport of YBa2Cu3O7-d films due to the interplay of anisotropy, random disorder and nanoscale periodic pinning|J. Trastoy,V. Rouco,C. Ulysse,R. Bernard,A. Palau,T. Puig,G. Faini,J. Lesueur,J. Briatico,J. E. Villegas###
(1014584, 1014592)
 This is done through magneto-transport experiments withYBa2Cu3O7-d thin films that contain a periodic vortex pinning array created viamasked ion irradiation, in addition to the native random pinning.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[139.0, 3, 'D', 2]

Al2O3
###Tunneling Magneto-Thermopower in Magnetic Tunnel Junctions|Carlos López-Monís,Alex Matos-Abiague,Jaroslav Fabian###
(1015014, 1015017)
 The analytical modelis tested numerically for the special case of an Al2O3-based MTJ, forwhich we analyze the dependence of the thermopower and TMT on the relativemagnetization orientations, as well as on the barrier height and thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Tunneling Magneto-Thermopower in Magnetic Tunnel Junctions|Carlos López-Monís,Alex Matos-Abiague,Jaroslav Fabian###
(1015126, 1015126)
 As its electrical prototype, this thermal spintransport model should serve as a phenomenological benchmark for analyzingexperimental and first-principles calculations of thermopower in magnetictunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Experimental evidence for direct insulator-quantum Hall transition in multi-layer graphene|Chiashain Chuang,Li-Hung Lin,Nobuyuki Aoki,Takahiro Ouchi,Akram M. Mahjoub,Tak-Pong Woo,J. P. Bird,Yuichi Ochiai,Shun-Tsung Lo,Chi-Te Liang###
(1015303, 1015303)
 At the crossing magnetic field Bc, an approximatelytemperature-independent point in the measured longitudinal resistivity, whichis ascribed to the direct insulator-quantum Hall (I-Q<missing VAR>H) transition, isobserved.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 1.0, 'In', 2],[224.0, 1.0, 'Therefore', 3],[329.0, 2, 'D', 4]

I
###Experimental evidence for direct insulator-quantum Hall transition in multi-layer graphene|Chiashain Chuang,Li-Hung Lin,Nobuyuki Aoki,Takahiro Ouchi,Akram M. Mahjoub,Tak-Pong Woo,J. P. Bird,Yuichi Ochiai,Shun-Tsung Lo,Chi-Te Liang###
(1015358, 1015358)
 At the crossing magnetic field Bc, an approximatelytemperature-independent point in the measured longitudinal resistivity, whichis ascribed to the direct insulator-quantum Hall (I-Q<missing VAR>H) transition, isobserved.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 1.0, 'In', 2],[169.0, 1.0, 'Therefore', 3],[274.0, 2, 'D', 4]

H
###Experimental evidence for direct insulator-quantum Hall transition in multi-layer graphene|Chiashain Chuang,Li-Hung Lin,Nobuyuki Aoki,Takahiro Ouchi,Akram M. Mahjoub,Tak-Pong Woo,J. P. Bird,Yuichi Ochiai,Shun-Tsung Lo,Chi-Te Liang###
(1015361, 1015361)
 At the crossing magnetic field Bc, an approximatelytemperature-independent point in the measured longitudinal resistivity, whichis ascribed to the direct insulator-quantum Hall (I-Q<missing VAR>H) transition, isobserved.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 1.0, 'In', 2],[166.0, 1.0, 'Therefore', 3],[271.0, 2, 'D', 4]

I
###Experimental evidence for direct insulator-quantum Hall transition in multi-layer graphene|Chiashain Chuang,Li-Hung Lin,Nobuyuki Aoki,Takahiro Ouchi,Akram M. Mahjoub,Tak-Pong Woo,J. P. Bird,Yuichi Ochiai,Shun-Tsung Lo,Chi-Te Liang###
(1015429, 1015429)
 It is found that atthe direct I-Q<missing VAR>H transition, the product of the quantum mobility and is about0.37 which is considerably smaller than 1. In contrast, at Bc, the longitudinalresistivity is close to the Hall resistivity, i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 1.0, 'In', 0],[98.0, 1.0, 'Therefore', 1],[203.0, 2, 'D', 2]

H
###Experimental evidence for direct insulator-quantum Hall transition in multi-layer graphene|Chiashain Chuang,Li-Hung Lin,Nobuyuki Aoki,Takahiro Ouchi,Akram M. Mahjoub,Tak-Pong Woo,J. P. Bird,Yuichi Ochiai,Shun-Tsung Lo,Chi-Te Liang###
(1015432, 1015432)
 It is found that atthe direct I-Q<missing VAR>H transition, the product of the quantum mobility and is about0.37 which is considerably smaller than 1. In contrast, at Bc, the longitudinalresistivity is close to the Hall resistivity, i.e.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 1.0, 'In', 0],[95.0, 1.0, 'Therefore', 1],[200.0, 2, 'D', 2]

I
###Experimental evidence for direct insulator-quantum Hall transition in multi-layer graphene|Chiashain Chuang,Li-Hung Lin,Nobuyuki Aoki,Takahiro Ouchi,Akram M. Mahjoub,Tak-Pong Woo,J. P. Bird,Yuichi Ochiai,Shun-Tsung Lo,Chi-Te Liang###
(1015556, 1015556)
, the product of theclassical mobility and the crossing field is about 1. Therefore our resultssuggest that different mobilities need to be introduced for the direct I-Q<missing VAR>Htransition observed in multi-layered graphene.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 1.0, 'In', 1],[29.0, 1.0, 'Therefore', 0],[76.0, 2, 'D', 1]

H
###Experimental evidence for direct insulator-quantum Hall transition in multi-layer graphene|Chiashain Chuang,Li-Hung Lin,Nobuyuki Aoki,Takahiro Ouchi,Akram M. Mahjoub,Tak-Pong Woo,J. P. Bird,Yuichi Ochiai,Shun-Tsung Lo,Chi-Te Liang###
(1015559, 1015559)
, the product of theclassical mobility and the crossing field is about 1. Therefore our resultssuggest that different mobilities need to be introduced for the direct I-Q<missing VAR>Htransition observed in multi-layered graphene.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 1.0, 'In', 1],[32.0, 1.0, 'Therefore', 0],[73.0, 2, 'D', 1]

I
###Experimental evidence for direct insulator-quantum Hall transition in multi-layer graphene|Chiashain Chuang,Li-Hung Lin,Nobuyuki Aoki,Takahiro Ouchi,Akram M. Mahjoub,Tak-Pong Woo,J. P. Bird,Yuichi Ochiai,Shun-Tsung Lo,Chi-Te Liang###
(1015616, 1015616)
 Combined with existingexperimental results obtained in various material systems, our data obtained ongraphene suggest that the direct I-Q<missing VAR>H transition is a universal effect in 2D.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 1.0, 'In', 2],[89.0, 1.0, 'Therefore', 1],[16.0, 2, 'D', 0]

H
###Experimental evidence for direct insulator-quantum Hall transition in multi-layer graphene|Chiashain Chuang,Li-Hung Lin,Nobuyuki Aoki,Takahiro Ouchi,Akram M. Mahjoub,Tak-Pong Woo,J. P. Bird,Yuichi Ochiai,Shun-Tsung Lo,Chi-Te Liang###
(1015619, 1015619)
 Combined with existingexperimental results obtained in various material systems, our data obtained ongraphene suggest that the direct I-Q<missing VAR>H transition is a universal effect in 2D.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 1.0, 'In', 2],[92.0, 1.0, 'Therefore', 1],[13.0, 2, 'D', 0]

MnSi
###Chiral skyrmions in cubic helimagnet films: the role of uniaxial anisotropy|M. N. Wilson,A. B. Butenko,A. N. Bogdanov,T. L. Monchesky###
(1015684, 1015685)
 This paper reports on magnetometry and magnetoresistance measurements of MnSiepilayers performed in out-of-plane magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 86, ',', 5]

In
###Chiral skyrmions in cubic helimagnet films: the role of uniaxial anisotropy|M. N. Wilson,A. B. Butenko,A. N. Bogdanov,T. L. Monchesky###
(1015764, 1015764)
 Incontrast to in-plane field measurements (Wilson et al.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 86, ',', 3]

B
###Chiral skyrmions in cubic helimagnet films: the role of uniaxial anisotropy|M. N. Wilson,A. B. Butenko,A. N. Bogdanov,T. L. Monchesky###
(1015794, 1015794)
 B 86, 144420(2012)), the hard-axis uniaxial anisotropy in MnSi/Si(111) increases the energyof (111)-oriented skyrmions and in-plane helicoids relative to the cone phase,and makes the cone phase the only stable magnetic texture below the saturationfield.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 86, ',', 0]

Pt
###Magnetoresistance of granular Pt-C nanostructures close to the metal-insulator-transition|Fabrizio Porrati,Roland Sachser,Michael Huth###
(1016044, 1016044)
Magnetoresistance of granular Pt-C nanostructures close to the metal-insulator-transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Magnetoresistance of granular Pt-C nanostructures close to the metal-insulator-transition|Fabrizio Porrati,Roland Sachser,Michael Huth###
(1016046, 1016046)
Magnetoresistance of granular Pt-C nanostructures close to the metal-insulator-transition.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Magnetoresistance of granular Pt-C nanostructures close to the metal-insulator-transition|Fabrizio Porrati,Roland Sachser,Michael Huth###
(1016081, 1016081)
 We investigate the electrical and magneto-transport properties of Pt-Cgranular metals prepared by focused-electron-beam induced deposition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Magnetoresistance of granular Pt-C nanostructures close to the metal-insulator-transition|Fabrizio Porrati,Roland Sachser,Michael Huth###
(1016083, 1016083)
 We investigate the electrical and magneto-transport properties of Pt-Cgranular metals prepared by focused-electron-beam induced deposition.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magnetoresistance of granular Pt-C nanostructures close to the metal-insulator-transition|Fabrizio Porrati,Roland Sachser,Michael Huth###
(1016105, 1016105)
 Inparticular, we consider samples close to the metal-insulator-transitionobtained from as-grown deposits by means of a low- energy electron irradiationtreatment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magnetoresistance of granular Pt-C nanostructures close to the metal-insulator-transition|Fabrizio Porrati,Roland Sachser,Michael Huth###
(1016278, 1016278)
 In order to fit theexperimental data spin-dependent tunneling has to be taken into account.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magnetoresistance of granular Pt-C nanostructures close to the metal-insulator-transition|Fabrizio Porrati,Roland Sachser,Michael Huth###
(1016312, 1016312)
 In thediscussion we attribute the origin of the spin-dependency to confinementeffects of Pt nano-grains embedded in the carbon matrix.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Magnetoresistance of granular Pt-C nanostructures close to the metal-insulator-transition|Fabrizio Porrati,Roland Sachser,Michael Huth###
(1016344, 1016344)
 In thediscussion we attribute the origin of the spin-dependency to confinementeffects of Pt nano-grains embedded in the carbon matrix.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZnO
###Magnetic domain and magnetic resistance phase transition in strongly correlated electronic material of perovskites junction|Ren R,Weiren Wang,Xuan Li,Zhongxia Zhao###
(1016421, 1016422)
 The junction magnetoresistivity and domain phase transition were studiedbetween ZnO and La0.4Gd0.1Sr0.5CoO3 thin films grown on LaAlO3 (100) substratesepitaxially by pulse laser deposit.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[286.0, 0.2, 'T', 5],[290.0, 4.86, '%', 5],[303.0, 6.05, '%', 5],[309.0, 140, 'K', 5]

La0.4Gd0.1Sr0.5CoO3
###Magnetic domain and magnetic resistance phase transition in strongly correlated electronic material of perovskites junction|Ren R,Weiren Wang,Xuan Li,Zhongxia Zhao###
(1016426, 1016434)
 The junction magnetoresistivity and domain phase transition were studiedbetween ZnO and La0.4Gd0.1Sr0.5CoO3 thin films grown on LaAlO3 (100) substratesepitaxially by pulse laser deposit.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08,0,0,0,0,0,0,0.02,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[274.0, 0.2, 'T', 5],[278.0, 4.86, '%', 5],[291.0, 6.05, '%', 5],[297.0, 140, 'K', 5]

LaAlO3
###Magnetic domain and magnetic resistance phase transition in strongly correlated electronic material of perovskites junction|Ren R,Weiren Wang,Xuan Li,Zhongxia Zhao###
(1016444, 1016447)
 The junction magnetoresistivity and domain phase transition were studiedbetween ZnO and La0.4Gd0.1Sr0.5CoO3 thin films grown on LaAlO3 (100) substratesepitaxially by pulse laser deposit.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[261.0, 0.2, 'T', 5],[265.0, 4.86, '%', 5],[278.0, 6.05, '%', 5],[284.0, 140, 'K', 5]

Tc127
###Magnetic domain and magnetic resistance phase transition in strongly correlated electronic material of perovskites junction|Ren R,Weiren Wang,Xuan Li,Zhongxia Zhao###
(1016494, 1016495)
 The ferromagnetic transformation intophase-separated (two phase) state was displayed below Tc127 and has observedthat the lattice change discontinuously in the doped cobalt perovskitesLa0.4Gd0.1Sr0.5CoO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[213.0, 0.2, 'T', 4],[217.0, 4.86, '%', 4],[230.0, 6.05, '%', 4],[236.0, 140, 'K', 4]

La0.4Gd0.1Sr0.5CoO3
###Magnetic domain and magnetic resistance phase transition in strongly correlated electronic material of perovskites junction|Ren R,Weiren Wang,Xuan Li,Zhongxia Zhao###
(1016525, 1016533)
 The ferromagnetic transformation intophase-separated (two phase) state was displayed below Tc127 and has observedthat the lattice change discontinuously in the doped cobalt perovskitesLa0.4Gd0.1Sr0.5CoO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08,0,0,0,0,0,0,0.02,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 0.2, 'T', 4],[179.0, 4.86, '%', 4],[192.0, 6.05, '%', 4],[198.0, 140, 'K', 4]

SCO
###Magnetic domain and magnetic resistance phase transition in strongly correlated electronic material of perovskites junction|Ren R,Weiren Wang,Xuan Li,Zhongxia Zhao###
(1016565, 1016567)
 The Ginzburg-Landau phase field is introduced to deduceantiferroelectric domain structure in LGSCO thin film.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 0.2, 'T', 3],[145.0, 4.86, '%', 3],[158.0, 6.05, '%', 3],[164.0, 140, 'K', 3]

Tc127
###Magnetic domain and magnetic resistance phase transition in strongly correlated electronic material of perovskites junction|Ren R,Weiren Wang,Xuan Li,Zhongxia Zhao###
(1016643, 1016644)
 The phase transformation intophase separated state occurs below Tc127-128K, and have displayed that thelattice constants change discontinuously at the transformation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 0.2, 'T', 1],[68.0, 4.86, '%', 1],[81.0, 6.05, '%', 1],[87.0, 140, 'K', 1]

K
###Magnetic domain and magnetic resistance phase transition in strongly correlated electronic material of perovskites junction|Ren R,Weiren Wang,Xuan Li,Zhongxia Zhao###
(1016647, 1016647)
 The phase transformation intophase separated state occurs below Tc127-128K, and have displayed that thelattice constants change discontinuously at the transformation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 0.2, 'T', 1],[65.0, 4.86, '%', 1],[78.0, 6.05, '%', 1],[84.0, 140, 'K', 1]

ZnO
###Magnetic domain and magnetic resistance phase transition in strongly correlated electronic material of perovskites junction|Ren R,Weiren Wang,Xuan Li,Zhongxia Zhao###
(1016686, 1016687)
 The positive MRof ZnO/LGSCO heterojunction exhibited the MIT behavior at 0.2 T is 4.86%, at0.5 T<missing VAR> is 6.05% for approximately 140K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 0.2, 'T', 0],[25.0, 4.86, '%', 0],[38.0, 6.05, '%', 0],[44.0, 140, 'K', 0]

SCO
###Magnetic domain and magnetic resistance phase transition in strongly correlated electronic material of perovskites junction|Ren R,Weiren Wang,Xuan Li,Zhongxia Zhao###
(1016691, 1016693)
 The positive MRof ZnO/LGSCO heterojunction exhibited the MIT behavior at 0.2 T is 4.86%, at0.5 T<missing VAR> is 6.05% for approximately 140K.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 0.2, 'T', 0],[19.0, 4.86, '%', 0],[32.0, 6.05, '%', 0],[38.0, 140, 'K', 0]

S
###Generalized multi-terminal decoherent transport: Recursive algorithms and applications to SASER and giant magnetoresistance|Carlos J. Cattena,Lucas J. Fernández-Alcázar,Raúl A. Bustos-Marún,Daijiro Nozaki,Horacio M. Pastawski###
(1016762, 1016762)
Generalized multi-terminal decoherent transport Recursive algorithms and applications to SASER and giant magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Generalized multi-terminal decoherent transport: Recursive algorithms and applications to SASER and giant magnetoresistance|Carlos J. Cattena,Lucas J. Fernández-Alcázar,Raúl A. Bustos-Marún,Daijiro Nozaki,Horacio M. Pastawski###
(1016764, 1016764)
Generalized multi-terminal decoherent transport Recursive algorithms and applications to SASER and giant magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Generalized multi-terminal decoherent transport: Recursive algorithms and applications to SASER and giant magnetoresistance|Carlos J. Cattena,Lucas J. Fernández-Alcázar,Raúl A. Bustos-Marún,Daijiro Nozaki,Horacio M. Pastawski###
(1016811, 1016811)
 Decoherent transport in mesoscopic and nanoscopic systems can be formulatedin terms of the D<missing VAR>Amato-Pastawski (D<missing VAR>P) model.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Generalized multi-terminal decoherent transport: Recursive algorithms and applications to SASER and giant magnetoresistance|Carlos J. Cattena,Lucas J. Fernández-Alcázar,Raúl A. Bustos-Marún,Daijiro Nozaki,Horacio M. Pastawski###
(1016826, 1016826)
 This generalizes theLandauer-Bu<missing VAR>ttiker picture by considering a distribution of local decoherentprocesses.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Generalized multi-terminal decoherent transport: Recursive algorithms and applications to SASER and giant magnetoresistance|Carlos J. Cattena,Lucas J. Fernández-Alcázar,Raúl A. Bustos-Marún,Daijiro Nozaki,Horacio M. Pastawski###
(1016886, 1016886)
 Wefirst review the original two-terminal D<missing VAR>P model for decoherent transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Generalized multi-terminal decoherent transport: Recursive algorithms and applications to SASER and giant magnetoresistance|Carlos J. Cattena,Lucas J. Fernández-Alcázar,Raúl A. Bustos-Marún,Daijiro Nozaki,Horacio M. Pastawski###
(1017041, 1017041)
 1) Assessing the role ofdecoherence in a model for phonon lasers (SASER).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Generalized multi-terminal decoherent transport: Recursive algorithms and applications to SASER and giant magnetoresistance|Carlos J. Cattena,Lucas J. Fernández-Alcázar,Raúl A. Bustos-Marún,Daijiro Nozaki,Horacio M. Pastawski###
(1017043, 1017043)
 1) Assessing the role ofdecoherence in a model for phonon lasers (SASER).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co/Cu
###Magneto-thermoelectric figure of merit of Co/Cu multilayers|X. K. Hu,P. Krzysteczko,N. Liebing,S. Serrano-Guisan,K. Rott,G. Reiss,J. Kimling,T. Böhnert,K. Nielsch,H. W. Schumacher###
(1017155, 1017157)
Magneto-thermoelectric figure of merit of Co/Cu multilayers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[148.0, -18, 'microvolt', 4]

Co/Cu
###Magneto-thermoelectric figure of merit of Co/Cu multilayers|X. K. Hu,P. Krzysteczko,N. Liebing,S. Serrano-Guisan,K. Rott,G. Reiss,J. Kimling,T. Böhnert,K. Nielsch,H. W. Schumacher###
(1017233, 1017235)
 We study the magnetotransport and themagneto-thermoelectric properties of Co/Cu multilayer devices in a lateralthermal gradient.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[70.0, -18, 'microvolt', 2]

K
###Magneto-thermoelectric figure of merit of Co/Cu multilayers|X. K. Hu,P. Krzysteczko,N. Liebing,S. Serrano-Guisan,K. Rott,G. Reiss,J. Kimling,T. Böhnert,K. Nielsch,H. W. Schumacher###
(1017307, 1017307)
 TheSeebeck coefficient reaches values up to -18 microvolt/K at room temperatureand shows a magnetic field dependence up to 28.6 % upon spin reversal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, -18, 'microvolt', 0]

In
###Magneto-thermoelectric figure of merit of Co/Cu multilayers|X. K. Hu,P. Krzysteczko,N. Liebing,S. Serrano-Guisan,K. Rott,G. Reiss,J. Kimling,T. Böhnert,K. Nielsch,H. W. Schumacher###
(1017343, 1017343)
 Incombination with thermal conductivity data of the same Co/Cu stack, we find aspin dependence of the thermoelectric figure of merit of up to 65 %.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, -18, 'microvolt', 1]

Co/Cu
###Magneto-thermoelectric figure of merit of Co/Cu multilayers|X. K. Hu,P. Krzysteczko,N. Liebing,S. Serrano-Guisan,K. Rott,G. Reiss,J. Kimling,T. Böhnert,K. Nielsch,H. W. Schumacher###
(1017362, 1017364)
 Incombination with thermal conductivity data of the same Co/Cu stack, we find aspin dependence of the thermoelectric figure of merit of up to 65 %.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[57.0, -18, 'microvolt', 1]

Cu
###Cu(Ir$_{1-x}$Cr$_x$)$_2$S$_4$: a model system for studying nanoscale phase coexistence at the metal-insulator transition|E. S. Bozin,K. R. Knox,P. Juhas,Y. S. Hor,J. F. Mitchell,S. J. L. Billinge###
(1017836, 1017836)
Cu(Ir1-xCrx)2S4 a model system for studying nanoscale phase coexistence at the metal-insulator transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ir1-xCr
###Cu(Ir$_{1-x}$Cr$_x$)$_2$S$_4$: a model system for studying nanoscale phase coexistence at the metal-insulator transition|E. S. Bozin,K. R. Knox,P. Juhas,Y. S. Hor,J. F. Mitchell,S. J. L. Billinge###
(1017838, 1017842)
Cu(Ir1-xCrx)2S4 a model system for studying nanoscale phase coexistence at the metal-insulator transition.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

S4
###Cu(Ir$_{1-x}$Cr$_x$)$_2$S$_4$: a model system for studying nanoscale phase coexistence at the metal-insulator transition|E. S. Bozin,K. R. Knox,P. Juhas,Y. S. Hor,J. F. Mitchell,S. J. L. Billinge###
(1017846, 1017847)
Cu(Ir1-xCrx)2S4 a model system for studying nanoscale phase coexistence at the metal-insulator transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Cu(Ir$_{1-x}$Cr$_x$)$_2$S$_4$: a model system for studying nanoscale phase coexistence at the metal-insulator transition|E. S. Bozin,K. R. Knox,P. Juhas,Y. S. Hor,J. F. Mitchell,S. J. L. Billinge###
(1018032, 1018032)
 Here we propose Cu(Ir1-xCrx)2S4 as a model system,where robust local structural signals lead to key new insights.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ir1-xCr
###Cu(Ir$_{1-x}$Cr$_x$)$_2$S$_4$: a model system for studying nanoscale phase coexistence at the metal-insulator transition|E. S. Bozin,K. R. Knox,P. Juhas,Y. S. Hor,J. F. Mitchell,S. J. L. Billinge###
(1018034, 1018038)
 Here we propose Cu(Ir1-xCrx)2S4 as a model system,where robust local structural signals lead to key new insights.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

S4
###Cu(Ir$_{1-x}$Cr$_x$)$_2$S$_4$: a model system for studying nanoscale phase coexistence at the metal-insulator transition|E. S. Bozin,K. R. Knox,P. Juhas,Y. S. Hor,J. F. Mitchell,S. J. L. Billinge###
(1018042, 1018043)
 Here we propose Cu(Ir1-xCrx)2S4 as a model system,where robust local structural signals lead to key new insights.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ir4
###Cu(Ir$_{1-x}$Cr$_x$)$_2$S$_4$: a model system for studying nanoscale phase coexistence at the metal-insulator transition|E. S. Bozin,K. R. Knox,P. Juhas,Y. S. Hor,J. F. Mitchell,S. J. L. Billinge###
(1018093, 1018094)
 We demonstratea hitherto unobserved coexistence of a Ir4 charge-localized dimer phaseand Cr-ferromagnetism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr
###Cu(Ir$_{1-x}$Cr$_x$)$_2$S$_4$: a model system for studying nanoscale phase coexistence at the metal-insulator transition|E. S. Bozin,K. R. Knox,P. Juhas,Y. S. Hor,J. F. Mitchell,S. J. L. Billinge###
(1018107, 1018107)
 We demonstratea hitherto unobserved coexistence of a Ir4 charge-localized dimer phaseand Cr-ferromagnetism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Magnetoresistance of composites based on graphitic disks and cones|Jozef Černák,Geir Helgesen,Fredrik Sydow Hage,Jozef Kováč###
(1018273, 1018273)
 We have studied the magnetotransport of conical and disk-shaped nanocarbonparticles in magnetic fields leftBrightleq9mathrmT<missing VAR> at temperatures2leq T<missing VAR>leq300mathrmK to characterize electron scattering in a threedimensional disordered material of multilayered quasi 2D and 3D carbonnanoparticles.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 2, 'D', 0],[50.0, 3, 'D', 0]

K
###Magnetoresistance of composites based on graphitic disks and cones|Jozef Černák,Geir Helgesen,Fredrik Sydow Hage,Jozef Kováč###
(1018292, 1018292)
 We have studied the magnetotransport of conical and disk-shaped nanocarbonparticles in magnetic fields leftBrightleq9mathrmT<missing VAR> at temperatures2leq T<missing VAR>leq300mathrmK to characterize electron scattering in a threedimensional disordered material of multilayered quasi 2D and 3D carbonnanoparticles.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 2, 'D', 0],[31.0, 3, 'D', 0]

C
###Magnetoresistance of composites based on graphitic disks and cones|Jozef Černák,Geir Helgesen,Fredrik Sydow Hage,Jozef Kováč###
(1018357, 1018357)
 The microstructure of the particles was modified bygraphitization at temperatures 1600circmathrmC and2700circmathrmC.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 2, 'D', 1],[34.0, 3, 'D', 1]

C
###Magnetoresistance of composites based on graphitic disks and cones|Jozef Černák,Geir Helgesen,Fredrik Sydow Hage,Jozef Kováč###
(1018365, 1018365)
 The microstructure of the particles was modified bygraphitization at temperatures 1600circmathrmC and2700circmathrmC.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 2, 'D', 1],[42.0, 3, 'D', 1]

CN
###Fabrication and characterisation of nanospintronic devices|J. Samm,J. Gramich,A. Baumgartner,M. Weiss,C. Schoenenberger###
(1019015, 1019016)
The processing with a low-density polymer and an optimised recipe allows us toimprove the electrical, magnetic and structural quality of ferromagneticPermalloy contacts on lateral carbon nanotube (CNT) quantum dot spin valvedevices, with comparable results for thermal and sputter deposition of thematerial.
Featurization terminated normally.
0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Fabrication and characterisation of nanospintronic devices|J. Samm,J. Gramich,A. Baumgartner,M. Weiss,C. Schoenenberger###
(1019118, 1019118)
 Inaddition, we report measurements on CNT<missing VAR> quantum dot spin valves that seem notto be compatible with the orthodox theories for spin transport in suchstructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CN
###Fabrication and characterisation of nanospintronic devices|J. Samm,J. Gramich,A. Baumgartner,M. Weiss,C. Schoenenberger###
(1019132, 1019133)
 Inaddition, we report measurements on CNT<missing VAR> quantum dot spin valves that seem notto be compatible with the orthodox theories for spin transport in suchstructures.
Featurization terminated normally.
0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CaRuO3
###Low-energy electronic properties of clean CaRuO$_3$: elusive Landau quasiparticles|M. Schneider,D. Geiger,S. Esser,U. S. Pracht,C. Stingl,Y. Tokiwa,V. Moshnyaga,I. Sheikin,J. Mravlje,M. Scheffler,P. Gegenwart###
(1019199, 1019202)
Low-energy electronic properties of clean CaRuO3 elusive Landau quasiparticles.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 55.0, 'Shubnikov', 1],[82.0, 1.5, 'K', 1],[162.0, 2, 'and', 2],[163.0, 25, 'K', 2]

CaRuO3
###Low-energy electronic properties of clean CaRuO$_3$: elusive Landau quasiparticles|M. Schneider,D. Geiger,S. Esser,U. S. Pracht,C. Stingl,Y. Tokiwa,V. Moshnyaga,I. Sheikin,J. Mravlje,M. Scheffler,P. Gegenwart###
(1019229, 1019232)
 We have prepared high-quality epitaxial thin films of CaRuO3 with residualresistivity ratios up to 55. Shubnikov-de Haas oscillations in themagnetoresistance and a T<missing VAR>2 temperature dependence in the electricalresistivity only below 1.5 K, whose coefficient is substantially suppressed inlarge magnetic fields, establish CaRuO3 as a Fermi liquid (FL) withanomalously low coherence scale.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 55.0, 'Shubnikov', 0],[52.0, 1.5, 'K', 0],[132.0, 2, 'and', 1],[133.0, 25, 'K', 1]

CaRuO3
###Low-energy electronic properties of clean CaRuO$_3$: elusive Landau quasiparticles|M. Schneider,D. Geiger,S. Esser,U. S. Pracht,C. Stingl,Y. Tokiwa,V. Moshnyaga,I. Sheikin,J. Mravlje,M. Scheffler,P. Gegenwart###
(1019309, 1019312)
 We have prepared high-quality epitaxial thin films of CaRuO3 with residualresistivity ratios up to 55. Shubnikov-de Haas oscillations in themagnetoresistance and a T<missing VAR>2 temperature dependence in the electricalresistivity only below 1.5 K, whose coefficient is substantially suppressed inlarge magnetic fields, establish CaRuO3 as a Fermi liquid (FL) withanomalously low coherence scale.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 55.0, 'Shubnikov', 0],[25.0, 1.5, 'K', 0],[52.0, 2, 'and', 1],[53.0, 25, 'K', 1]

F
###Low-energy electronic properties of clean CaRuO$_3$: elusive Landau quasiparticles|M. Schneider,D. Geiger,S. Esser,U. S. Pracht,C. Stingl,Y. Tokiwa,V. Moshnyaga,I. Sheikin,J. Mravlje,M. Scheffler,P. Gegenwart###
(1019323, 1019323)
 We have prepared high-quality epitaxial thin films of CaRuO3 with residualresistivity ratios up to 55. Shubnikov-de Haas oscillations in themagnetoresistance and a T<missing VAR>2 temperature dependence in the electricalresistivity only below 1.5 K, whose coefficient is substantially suppressed inlarge magnetic fields, establish CaRuO3 as a Fermi liquid (FL) withanomalously low coherence scale.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 55.0, 'Shubnikov', 0],[39.0, 1.5, 'K', 0],[41.0, 2, 'and', 1],[42.0, 25, 'K', 1]

NF
###Low-energy electronic properties of clean CaRuO$_3$: elusive Landau quasiparticles|M. Schneider,D. Geiger,S. Esser,U. S. Pracht,C. Stingl,Y. Tokiwa,V. Moshnyaga,I. Sheikin,J. Mravlje,M. Scheffler,P. Gegenwart###
(1019346, 1019347)
 Non-Fermi liquid (NFL) T<missing VAR>3/2 dependence isfound between 2 and 25 K.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 55.0, 'Shubnikov', 1],[62.0, 1.5, 'K', 1],[17.0, 2, 'and', 0],[18.0, 25, 'K', 0]

F
###Low-energy electronic properties of clean CaRuO$_3$: elusive Landau quasiparticles|M. Schneider,D. Geiger,S. Esser,U. S. Pracht,C. Stingl,Y. Tokiwa,V. Moshnyaga,I. Sheikin,J. Mravlje,M. Scheffler,P. Gegenwart###
(1019432, 1019432)
 For frequencies below 0.6T<missing VAR>Hz, the conductivity is Drude-like and can be modeled by FL<missing VAR> concepts, whilefor higher frequencies non-Drude behavior, inconsistent with FL<missing VAR> predictions, isfound.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, 55.0, 'Shubnikov', 3],[148.0, 1.5, 'K', 3],[68.0, 2, 'and', 2],[67.0, 25, 'K', 2]

F
###Low-energy electronic properties of clean CaRuO$_3$: elusive Landau quasiparticles|M. Schneider,D. Geiger,S. Esser,U. S. Pracht,C. Stingl,Y. Tokiwa,V. Moshnyaga,I. Sheikin,J. Mravlje,M. Scheffler,P. Gegenwart###
(1019458, 1019458)
 For frequencies below 0.6T<missing VAR>Hz, the conductivity is Drude-like and can be modeled by FL<missing VAR> concepts, whilefor higher frequencies non-Drude behavior, inconsistent with FL<missing VAR> predictions, isfound.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[212.0, 55.0, 'Shubnikov', 3],[174.0, 1.5, 'K', 3],[94.0, 2, 'and', 2],[93.0, 25, 'K', 2]

CaRuO3
###Low-energy electronic properties of clean CaRuO$_3$: elusive Landau quasiparticles|M. Schneider,D. Geiger,S. Esser,U. S. Pracht,C. Stingl,Y. Tokiwa,V. Moshnyaga,I. Sheikin,J. Mravlje,M. Scheffler,P. Gegenwart###
(1019474, 1019477)
 This establishes CaRuO3 as a prime example of optical NFL<missing VAR> behavior inthe T<missing VAR>Hz range.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[228.0, 55.0, 'Shubnikov', 4],[190.0, 1.5, 'K', 4],[110.0, 2, 'and', 3],[109.0, 25, 'K', 3]

NF
###Low-energy electronic properties of clean CaRuO$_3$: elusive Landau quasiparticles|M. Schneider,D. Geiger,S. Esser,U. S. Pracht,C. Stingl,Y. Tokiwa,V. Moshnyaga,I. Sheikin,J. Mravlje,M. Scheffler,P. Gegenwart###
(1019491, 1019492)
 This establishes CaRuO3 as a prime example of optical NFL<missing VAR> behavior inthe T<missing VAR>Hz range.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[245.0, 55.0, 'Shubnikov', 4],[207.0, 1.5, 'K', 4],[127.0, 2, 'and', 3],[126.0, 25, 'K', 3]

K2Bi8Se13
###Spin-orbit coupling and weak antilocalization in thermoelectric material $β$-K$_{2}$Bi$_{8}$Se$_{13}$|J. Hu,J. Y. Liu,Z. Q. Mao###
(1019535, 1019540)
Spin-orbit coupling and weak antilocalization in thermoelectric material -K2Bi8Se13.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08695652173913043,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5652173913043478,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.34782608695652173,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 2.1, ',', 3]

(SOC)
###Spin-orbit coupling and weak antilocalization in thermoelectric material $β$-K$_{2}$Bi$_{8}$Se$_{13}$|J. Hu,J. Y. Liu,Z. Q. Mao###
(1019561, 1019565)
 We have studied the effect of spin-orbital coupling (SOC) on electronictransport properties of the thermoelectric materialbeta-K2Bi8Se13 via magnetoresistance (MR) measurements.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 2.1, ',', 2]

K2Bi8Se13
###Spin-orbit coupling and weak antilocalization in thermoelectric material $β$-K$_{2}$Bi$_{8}$Se$_{13}$|J. Hu,J. Y. Liu,Z. Q. Mao###
(1019587, 1019592)
 We have studied the effect of spin-orbital coupling (SOC) on electronictransport properties of the thermoelectric materialbeta-K2Bi8Se13 via magnetoresistance (MR) measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08695652173913043,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5652173913043478,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.34782608695652173,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 2.1, ',', 2]

SOC
###Spin-orbit coupling and weak antilocalization in thermoelectric material $β$-K$_{2}$Bi$_{8}$Se$_{13}$|J. Hu,J. Y. Liu,Z. Q. Mao###
(1019617, 1019619)
 Wefound that the strong SOC in this material results in weak antilocalization(WAL) effect, which can be well described by the three-dimensional weaklocalization model.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 2.1, ',', 1]

W
###Spin-orbit coupling and weak antilocalization in thermoelectric material $β$-K$_{2}$Bi$_{8}$Se$_{13}$|J. Hu,J. Y. Liu,Z. Q. Mao###
(1019637, 1019637)
 Wefound that the strong SOC in this material results in weak antilocalization(WAL) effect, which can be well described by the three-dimensional weaklocalization model.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 2.1, ',', 1]

W
###Spin-orbit coupling and weak antilocalization in thermoelectric material $β$-K$_{2}$Bi$_{8}$Se$_{13}$|J. Hu,J. Y. Liu,Z. Q. Mao###
(1019753, 1019753)
 Like in topological insulators, the WAL<missing VAR> effectin beta-K2Bi8Se13 can be quenched by magnetic impurities (Mn)but is robust against non-magnetic impurities (Te).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 2.1, ',', 1]

K2Bi8Se13
###Spin-orbit coupling and weak antilocalization in thermoelectric material $β$-K$_{2}$Bi$_{8}$Se$_{13}$|J. Hu,J. Y. Liu,Z. Q. Mao###
(1019764, 1019769)
 Like in topological insulators, the WAL<missing VAR> effectin beta-K2Bi8Se13 can be quenched by magnetic impurities (Mn)but is robust against non-magnetic impurities (Te).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08695652173913043,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5652173913043478,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.34782608695652173,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 2.1, ',', 1]

(Mn)
###Spin-orbit coupling and weak antilocalization in thermoelectric material $β$-K$_{2}$Bi$_{8}$Se$_{13}$|J. Hu,J. Y. Liu,Z. Q. Mao###
(1019783, 1019785)
 Like in topological insulators, the WAL<missing VAR> effectin beta-K2Bi8Se13 can be quenched by magnetic impurities (Mn)but is robust against non-magnetic impurities (Te).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 2.1, ',', 1]

(Te)
###Spin-orbit coupling and weak antilocalization in thermoelectric material $β$-K$_{2}$Bi$_{8}$Se$_{13}$|J. Hu,J. Y. Liu,Z. Q. Mao###
(1019802, 1019804)
 Like in topological insulators, the WAL<missing VAR> effectin beta-K2Bi8Se13 can be quenched by magnetic impurities (Mn)but is robust against non-magnetic impurities (Te).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 2.1, ',', 1]

SOC
###Spin-orbit coupling and weak antilocalization in thermoelectric material $β$-K$_{2}$Bi$_{8}$Se$_{13}$|J. Hu,J. Y. Liu,Z. Q. Mao###
(1019844, 1019846)
 Although ourmagnetotransport studies do not provide any evidences for topological surfacestates, our analyses suggest that SOC plays an important role in determiningthermoelectric properties of beta-K2Bi8Se13.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 2.1, ',', 2]

K2Bi8Se13
###Spin-orbit coupling and weak antilocalization in thermoelectric material $β$-K$_{2}$Bi$_{8}$Se$_{13}$|J. Hu,J. Y. Liu,Z. Q. Mao###
(1019869, 1019874)
 Although ourmagnetotransport studies do not provide any evidences for topological surfacestates, our analyses suggest that SOC plays an important role in determiningthermoelectric properties of beta-K2Bi8Se13.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08695652173913043,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5652173913043478,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.34782608695652173,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 2.1, ',', 2]

Sr2IrO4
###Ambipolar Transport and Magneto-resistance Crossover in a Mott Insulator, Sr$_{2}$IrO$_{4}$|J. Ravichandran,C. R. Serrao,D. K. Efetov,D. Yi,Y. S. Oh,S. -W. Cheong,R. Ramesh,P. Kim###
(1019906, 1019910)
Ambipolar Transport and Magneto-resistance Crossover in a Mott Insulator, Sr2IrO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 10, '%', 2]

La
###Ambipolar Transport and Magneto-resistance Crossover in a Mott Insulator, Sr$_{2}$IrO$_{4}$|J. Ravichandran,C. R. Serrao,D. K. Efetov,D. Yi,Y. S. Oh,S. -W. Cheong,R. Ramesh,P. Kim###
(1019944, 1019944)
 Electric field effect (EFE) controlled magnetoelectric transport in thinfilms of undoped and La-doped Sr2IrO4 (SIO) were investigated underthe action of ionic liquid gating.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 10, '%', 1]

Sr2IrO4
###Ambipolar Transport and Magneto-resistance Crossover in a Mott Insulator, Sr$_{2}$IrO$_{4}$|J. Ravichandran,C. R. Serrao,D. K. Efetov,D. Yi,Y. S. Oh,S. -W. Cheong,R. Ramesh,P. Kim###
(1019948, 1019952)
 Electric field effect (EFE) controlled magnetoelectric transport in thinfilms of undoped and La-doped Sr2IrO4 (SIO) were investigated underthe action of ionic liquid gating.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 10, '%', 1]

(SIO)
###Ambipolar Transport and Magneto-resistance Crossover in a Mott Insulator, Sr$_{2}$IrO$_{4}$|J. Ravichandran,C. R. Serrao,D. K. Efetov,D. Yi,Y. S. Oh,S. -W. Cheong,R. Ramesh,P. Kim###
(1019954, 1019958)
 Electric field effect (EFE) controlled magnetoelectric transport in thinfilms of undoped and La-doped Sr2IrO4 (SIO) were investigated underthe action of ionic liquid gating.
Featurization successful!
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 10, '%', 1]

K
###Ambipolar Transport and Magneto-resistance Crossover in a Mott Insulator, Sr$_{2}$IrO$_{4}$|J. Ravichandran,C. R. Serrao,D. K. Efetov,D. Yi,Y. S. Oh,S. -W. Cheong,R. Ramesh,P. Kim###
(1020137, 1020137)
The crossover temperature was around sim80-90 K, irrespective of thefilling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 10, '%', 3]

V
###Ambipolar Transport and Magneto-resistance Crossover in a Mott Insulator, Sr$_{2}$IrO$_{4}$|J. Ravichandran,C. R. Serrao,D. K. Efetov,D. Yi,Y. S. Oh,S. -W. Cheong,R. Ramesh,P. Kim###
(1020205, 1020205)
 This temperature and magnetic field dependent crossover isqualitatively associated with a change in the conduction mechanism from Mott toCoulomb gap mediated variable range hopping (VR<missing VAR>H).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[170.0, 10, '%', 4]

H
###Ambipolar Transport and Magneto-resistance Crossover in a Mott Insulator, Sr$_{2}$IrO$_{4}$|J. Ravichandran,C. R. Serrao,D. K. Efetov,D. Yi,Y. S. Oh,S. -W. Cheong,R. Ramesh,P. Kim###
(1020207, 1020207)
 This temperature and magnetic field dependent crossover isqualitatively associated with a change in the conduction mechanism from Mott toCoulomb gap mediated variable range hopping (VR<missing VAR>H).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[172.0, 10, '%', 4]

SIO
###Ambipolar Transport and Magneto-resistance Crossover in a Mott Insulator, Sr$_{2}$IrO$_{4}$|J. Ravichandran,C. R. Serrao,D. K. Efetov,D. Yi,Y. S. Oh,S. -W. Cheong,R. Ramesh,P. Kim###
(1020232, 1020234)
 This explains the origin ofrobust insulating ground state of SIO in electrical transport studies andhighlights the importance of disorder and Coulombic interaction on electricalproperties of SIO.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[197.0, 10, '%', 5]

SIO
###Ambipolar Transport and Magneto-resistance Crossover in a Mott Insulator, Sr$_{2}$IrO$_{4}$|J. Ravichandran,C. R. Serrao,D. K. Efetov,D. Yi,Y. S. Oh,S. -W. Cheong,R. Ramesh,P. Kim###
(1020272, 1020274)
 This explains the origin ofrobust insulating ground state of SIO in electrical transport studies andhighlights the importance of disorder and Coulombic interaction on electricalproperties of SIO.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[237.0, 10, '%', 5]

LaTiO3/SrTiO3
###Enhanced spin-orbit interaction and Kondo scattering in $δ$-doped LaTiO$_3$/SrTiO$_3$ interfaces|Shubhankar Das,A. Rastogi,Lijun Wu,Jin-Cheng Zheng,Z. Hossain,Yimei Zhu,R. C. Budhani###
(1020304, 1020312)
Enhanced spin-orbit interaction and Kondo scattering in -doped LaTiO3/SrTiO3 interfaces.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[153.0, 10, 'K', 2],[255.0, 10, 'K', 3]

LaTiO3/SrTiO3
###Enhanced spin-orbit interaction and Kondo scattering in $δ$-doped LaTiO$_3$/SrTiO$_3$ interfaces|Shubhankar Das,A. Rastogi,Lijun Wu,Jin-Cheng Zheng,Z. Hossain,Yimei Zhu,R. C. Budhani###
(1020337, 1020345)
 We present a study of delta (delta) doping at LaTiO3/SrTiO3(LTO/ST<missing VAR>O) interface with iso-structural antiferromagnetic perovskite LaCrO3(L<missing VAR>CO) that dramatically alters the properties of the two dimensional electrongas (2-DEG) at the interface.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[120.0, 10, 'K', 1],[222.0, 10, 'K', 2]

O/S
###Enhanced spin-orbit interaction and Kondo scattering in $δ$-doped LaTiO$_3$/SrTiO$_3$ interfaces|Shubhankar Das,A. Rastogi,Lijun Wu,Jin-Cheng Zheng,Z. Hossain,Yimei Zhu,R. C. Budhani###
(1020351, 1020353)
 We present a study of delta (delta) doping at LaTiO3/SrTiO3(LTO/ST<missing VAR>O) interface with iso-structural antiferromagnetic perovskite LaCrO3(L<missing VAR>CO) that dramatically alters the properties of the two dimensional electrongas (2-DEG) at the interface.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[112.0, 10, 'K', 1],[214.0, 10, 'K', 2]

O
###Enhanced spin-orbit interaction and Kondo scattering in $δ$-doped LaTiO$_3$/SrTiO$_3$ interfaces|Shubhankar Das,A. Rastogi,Lijun Wu,Jin-Cheng Zheng,Z. Hossain,Yimei Zhu,R. C. Budhani###
(1020355, 1020355)
 We present a study of delta (delta) doping at LaTiO3/SrTiO3(LTO/ST<missing VAR>O) interface with iso-structural antiferromagnetic perovskite LaCrO3(L<missing VAR>CO) that dramatically alters the properties of the two dimensional electrongas (2-DEG) at the interface.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 10, 'K', 1],[212.0, 10, 'K', 2]

LaCrO3
###Enhanced spin-orbit interaction and Kondo scattering in $δ$-doped LaTiO$_3$/SrTiO$_3$ interfaces|Shubhankar Das,A. Rastogi,Lijun Wu,Jin-Cheng Zheng,Z. Hossain,Yimei Zhu,R. C. Budhani###
(1020370, 1020373)
 We present a study of delta (delta) doping at LaTiO3/SrTiO3(LTO/ST<missing VAR>O) interface with iso-structural antiferromagnetic perovskite LaCrO3(L<missing VAR>CO) that dramatically alters the properties of the two dimensional electrongas (2-DEG) at the interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 10, 'K', 1],[194.0, 10, 'K', 2]

O
###Enhanced spin-orbit interaction and Kondo scattering in $δ$-doped LaTiO$_3$/SrTiO$_3$ interfaces|Shubhankar Das,A. Rastogi,Lijun Wu,Jin-Cheng Zheng,Z. Hossain,Yimei Zhu,R. C. Budhani###
(1020379, 1020379)
 We present a study of delta (delta) doping at LaTiO3/SrTiO3(LTO/ST<missing VAR>O) interface with iso-structural antiferromagnetic perovskite LaCrO3(L<missing VAR>CO) that dramatically alters the properties of the two dimensional electrongas (2-DEG) at the interface.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 10, 'K', 1],[188.0, 10, 'K', 2]

Ti3
###Enhanced spin-orbit interaction and Kondo scattering in $δ$-doped LaTiO$_3$/SrTiO$_3$ interfaces|Shubhankar Das,A. Rastogi,Lijun Wu,Jin-Cheng Zheng,Z. Hossain,Yimei Zhu,R. C. Budhani###
(1020546, 1020547)
 The positive and negative MR for out-of-plane andin-plane field respectively and the field and temperature dependencies of MRsuggest Kondo scattering by localized Ti3 moments renormalized byspin-orbit interaction at T<missing VAR> < 10 K, with the increased delta-layerthickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 10, 'K', 1],[20.0, 10, 'K', 0]

O
###Enhanced spin-orbit interaction and Kondo scattering in $δ$-doped LaTiO$_3$/SrTiO$_3$ interfaces|Shubhankar Das,A. Rastogi,Lijun Wu,Jin-Cheng Zheng,Z. Hossain,Yimei Zhu,R. C. Budhani###
(1020622, 1020622)
 Electron energy loss spectroscopy and density functionalcalculations provide convincing evidence for blocking of electron transfer fromLTO to ST<missing VAR>O by the delta-layer.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 10, 'K', 2],[55.0, 10, 'K', 1]

S
###Enhanced spin-orbit interaction and Kondo scattering in $δ$-doped LaTiO$_3$/SrTiO$_3$ interfaces|Shubhankar Das,A. Rastogi,Lijun Wu,Jin-Cheng Zheng,Z. Hossain,Yimei Zhu,R. C. Budhani###
(1020626, 1020626)
 Electron energy loss spectroscopy and density functionalcalculations provide convincing evidence for blocking of electron transfer fromLTO to ST<missing VAR>O by the delta-layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 10, 'K', 2],[59.0, 10, 'K', 1]

O
###Enhanced spin-orbit interaction and Kondo scattering in $δ$-doped LaTiO$_3$/SrTiO$_3$ interfaces|Shubhankar Das,A. Rastogi,Lijun Wu,Jin-Cheng Zheng,Z. Hossain,Yimei Zhu,R. C. Budhani###
(1020628, 1020628)
 Electron energy loss spectroscopy and density functionalcalculations provide convincing evidence for blocking of electron transfer fromLTO to ST<missing VAR>O by the delta-layer.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 10, 'K', 2],[61.0, 10, 'K', 1]

BiFeO3/YBa2Cu3O7
###Induced Ferromagnetism at BiFeO3/YBa2Cu3O7 Interfaces|Jian-Xin Zhu,Xiao-Dong Wen,J. T. Haraldsen,Mi He,C. Panagopoulos,Elbert E. M. Chia###
(1021023, 1021034)
Induced Ferromagnetism at BiFeO3/YBa2Cu3O7 Interfaces.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Os
###Induced Ferromagnetism at BiFeO3/YBa2Cu3O7 Interfaces|Jian-Xin Zhu,Xiao-Dong Wen,J. T. Haraldsen,Mi He,C. Panagopoulos,Elbert E. M. Chia###
(1021048, 1021048)
 Transition metal oxides (TMOs) exhibit many emergent phenomena ranging fromhigh-temperature superconductivity and giant magnetoresistance to magnetism andferroelectricity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Induced Ferromagnetism at BiFeO3/YBa2Cu3O7 Interfaces|Jian-Xin Zhu,Xiao-Dong Wen,J. T. Haraldsen,Mi He,C. Panagopoulos,Elbert E. M. Chia###
(1021086, 1021086)
 In addition, when TMOs are interfaced with each other, newfunctionalities can arise, which are absent in individual components.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Os
###Induced Ferromagnetism at BiFeO3/YBa2Cu3O7 Interfaces|Jian-Xin Zhu,Xiao-Dong Wen,J. T. Haraldsen,Mi He,C. Panagopoulos,Elbert E. M. Chia###
(1021095, 1021095)
 In addition, when TMOs are interfaced with each other, newfunctionalities can arise, which are absent in individual components.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BiFeO3/YBa2Cu3O7
###Induced Ferromagnetism at BiFeO3/YBa2Cu3O7 Interfaces|Jian-Xin Zhu,Xiao-Dong Wen,J. T. Haraldsen,Mi He,C. Panagopoulos,Elbert E. M. Chia###
(1021160, 1021171)
 Here, wereport results from first-principles calculations on the magnetism at theBiFeO3/YBa2Cu3O7 interfaces.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

BiFeO3
###Induced Ferromagnetism at BiFeO3/YBa2Cu3O7 Interfaces|Jian-Xin Zhu,Xiao-Dong Wen,J. T. Haraldsen,Mi He,C. Panagopoulos,Elbert E. M. Chia###
(1021199, 1021202)
 By comparing the total energy for various magneticspin configurations inside BiFeO3, we are able to show that a metallicferromagnetism is induced near the interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Multistate nonvolatile straintronics controlled by a lateral electric field|V. Iurchuk,B. Doudin,B. Kundys###
(1021452, 1021452)
 Sub-coercive electricalwriting of a remnant strain of a PZT substrate imprints stable and rewritableresistance changes on a CoFe overlayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFe
###Multistate nonvolatile straintronics controlled by a lateral electric field|V. Iurchuk,B. Doudin,B. Kundys###
(1021475, 1021476)
 Sub-coercive electricalwriting of a remnant strain of a PZT substrate imprints stable and rewritableresistance changes on a CoFe overlayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Tunnel Magnetoresistance scan of a pristine three-dimensional topological insulator|Sthitadhi Roy,Abhiram Soori,Sourin Das###
(1021720, 1021720)
 Though the Fermi surface of surface states of a 3D topological insulator (T<missing VAR>I)has zero magnetization, an arbitrary segment of the full Fermi surface has aunique magnetic moment consistent with the type of spin-momentum locking inhand.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 3, 'D', 0],[297.0, 2, 'D', 3]

I
###Tunnel Magnetoresistance scan of a pristine three-dimensional topological insulator|Sthitadhi Roy,Abhiram Soori,Sourin Das###
(1021854, 1021854)
 We propose a three-terminal set up, which directly couples to themagnetization of a chosen segment of a Fermi surface hence leading to a finitetunnel magnetoresistance (TMR) response of the nonmagnetic T<missing VAR>I surface states,when coupled to spin polarized STM probe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 3, 'D', 1],[163.0, 2, 'D', 2]

S
###Tunnel Magnetoresistance scan of a pristine three-dimensional topological insulator|Sthitadhi Roy,Abhiram Soori,Sourin Das###
(1021872, 1021872)
 We propose a three-terminal set up, which directly couples to themagnetization of a chosen segment of a Fermi surface hence leading to a finitetunnel magnetoresistance (TMR) response of the nonmagnetic T<missing VAR>I surface states,when coupled to spin polarized STM probe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 3, 'D', 1],[145.0, 2, 'D', 2]

I
###Tunnel Magnetoresistance scan of a pristine three-dimensional topological insulator|Sthitadhi Roy,Abhiram Soori,Sourin Das###
(1021915, 1021915)
 This multiterminal TMR not onlyprovides a unique signature of spin-momentum locking for a pristine T<missing VAR>I but alsoprovides a direct measure of momentum resolved out of plane polarization ofhexagonally warped Fermi surfaces relevant for Bi2Te3, which could be ascomprehensive as spin-resolved ARPES.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[203.0, 3, 'D', 2],[102.0, 2, 'D', 1]

Bi2Te3
###Tunnel Magnetoresistance scan of a pristine three-dimensional topological insulator|Sthitadhi Roy,Abhiram Soori,Sourin Das###
(1021959, 1021962)
 This multiterminal TMR not onlyprovides a unique signature of spin-momentum locking for a pristine T<missing VAR>I but alsoprovides a direct measure of momentum resolved out of plane polarization ofhexagonally warped Fermi surfaces relevant for Bi2Te3, which could be ascomprehensive as spin-resolved ARPES.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[247.0, 3, 'D', 2],[55.0, 2, 'D', 1]

S
###Tunnel Magnetoresistance scan of a pristine three-dimensional topological insulator|Sthitadhi Roy,Abhiram Soori,Sourin Das###
(1021986, 1021986)
 This multiterminal TMR not onlyprovides a unique signature of spin-momentum locking for a pristine T<missing VAR>I but alsoprovides a direct measure of momentum resolved out of plane polarization ofhexagonally warped Fermi surfaces relevant for Bi2Te3, which could be ascomprehensive as spin-resolved ARPES.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[274.0, 3, 'D', 2],[31.0, 2, 'D', 1]

(SO)
###Tunnel Magnetoresistance scan of a pristine three-dimensional topological insulator|Sthitadhi Roy,Abhiram Soori,Sourin Das###
(1022023, 1022026)
 Implication of this unconventional TMR isalso discussed in the broader context of 2D spin-orbit (SO) materials.
Featurization successful!
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[311.0, 3, 'D', 3],[6.0, 2, 'D', 0]

Ag
###Transport and pinning properties of Ag-doped FeSe0.94|E. Nazarova,N. Balchev,K. Nenkov,K. Buchkov,D. Kovacheva,A. Zahariev,G. Fuchs###
(1022049, 1022049)
Transport and pinning properties of Ag-doped FeSe0.94.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 14, 'T', 1],[137.0, 1, 'K', 3]

FeSe0.94
###Transport and pinning properties of Ag-doped FeSe0.94|E. Nazarova,N. Balchev,K. Nenkov,K. Buchkov,D. Kovacheva,A. Zahariev,G. Fuchs###
(1022053, 1022055)
Transport and pinning properties of Ag-doped FeSe0.94.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5154639175257733,0,0,0,0,0,0,0,0.4845360824742268,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 14, 'T', 1],[131.0, 1, 'K', 3]

Ag
###Transport and pinning properties of Ag-doped FeSe0.94|E. Nazarova,N. Balchev,K. Nenkov,K. Buchkov,D. Kovacheva,A. Zahariev,G. Fuchs###
(1022083, 1022083)
 We investigated the superconducting transition and the pinning properties ofundoped and Ag-doped FeSe0.94 at magnetic fields up to 14 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 14, 'T', 0],[103.0, 1, 'K', 2]

FeSe0.94
###Transport and pinning properties of Ag-doped FeSe0.94|E. Nazarova,N. Balchev,K. Nenkov,K. Buchkov,D. Kovacheva,A. Zahariev,G. Fuchs###
(1022087, 1022089)
 We investigated the superconducting transition and the pinning properties ofundoped and Ag-doped FeSe0.94 at magnetic fields up to 14 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5154639175257733,0,0,0,0,0,0,0,0.4845360824742268,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 14, 'T', 0],[97.0, 1, 'K', 2]

Ag
###Transport and pinning properties of Ag-doped FeSe0.94|E. Nazarova,N. Balchev,K. Nenkov,K. Buchkov,D. Kovacheva,A. Zahariev,G. Fuchs###
(1022116, 1022116)
 It was establishedthat due to Ag addition the hexagonal phase formation in melted FeSe0.94samples is suppressed and the grain connectivity is strongly improved.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 14, 'T', 1],[70.0, 1, 'K', 1]

FeSe0.94
###Transport and pinning properties of Ag-doped FeSe0.94|E. Nazarova,N. Balchev,K. Nenkov,K. Buchkov,D. Kovacheva,A. Zahariev,G. Fuchs###
(1022132, 1022134)
 It was establishedthat due to Ag addition the hexagonal phase formation in melted FeSe0.94samples is suppressed and the grain connectivity is strongly improved.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5154639175257733,0,0,0,0,0,0,0,0.4845360824742268,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 14, 'T', 1],[52.0, 1, 'K', 1]

Tc
###Transport and pinning properties of Ag-doped FeSe0.94|E. Nazarova,N. Balchev,K. Nenkov,K. Buchkov,D. Kovacheva,A. Zahariev,G. Fuchs###
(1022190, 1022190)
 Theobtained superconducting zero-field transition becomes sharp (with a transitionwidth below 1 K), Tc and the upper critical field were found to increase,whereas the normal state resistivity significantly reduces becoming comparablewith those of FeSe single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 14, 'T', 2],[4.0, 1, 'K', 0]

FeSe
###Transport and pinning properties of Ag-doped FeSe0.94|E. Nazarova,N. Balchev,K. Nenkov,K. Buchkov,D. Kovacheva,A. Zahariev,G. Fuchs###
(1022237, 1022238)
 Theobtained superconducting zero-field transition becomes sharp (with a transitionwidth below 1 K), Tc and the upper critical field were found to increase,whereas the normal state resistivity significantly reduces becoming comparablewith those of FeSe single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 14, 'T', 2],[51.0, 1, 'K', 0]

In
###Transport and pinning properties of Ag-doped FeSe0.94|E. Nazarova,N. Balchev,K. Nenkov,K. Buchkov,D. Kovacheva,A. Zahariev,G. Fuchs###
(1022245, 1022245)
 In addition, a considerablemagnetoresistance was observed due to Ag doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 14, 'T', 3],[59.0, 1, 'K', 1]

Ag
###Transport and pinning properties of Ag-doped FeSe0.94|E. Nazarova,N. Balchev,K. Nenkov,K. Buchkov,D. Kovacheva,A. Zahariev,G. Fuchs###
(1022265, 1022265)
 In addition, a considerablemagnetoresistance was observed due to Ag doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 14, 'T', 3],[79.0, 1, 'K', 1]

Ag
###Transport and pinning properties of Ag-doped FeSe0.94|E. Nazarova,N. Balchev,K. Nenkov,K. Buchkov,D. Kovacheva,A. Zahariev,G. Fuchs###
(1022283, 1022283)
 The resistive transition ofundoped and Ag-doped FeSe0.94 is dominated by thermally activated flux flow.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[183.0, 14, 'T', 4],[97.0, 1, 'K', 2]

FeSe0.94
###Transport and pinning properties of Ag-doped FeSe0.94|E. Nazarova,N. Balchev,K. Nenkov,K. Buchkov,D. Kovacheva,A. Zahariev,G. Fuchs###
(1022287, 1022289)
 The resistive transition ofundoped and Ag-doped FeSe0.94 is dominated by thermally activated flux flow.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5154639175257733,0,0,0,0,0,0,0,0.4845360824742268,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[187.0, 14, 'T', 4],[101.0, 1, 'K', 2]

U
###Transport and pinning properties of Ag-doped FeSe0.94|E. Nazarova,N. Balchev,K. Nenkov,K. Buchkov,D. Kovacheva,A. Zahariev,G. Fuchs###
(1022315, 1022315)
From the activation energy U vs H dependence, a crossover from single-vortexpinning to a collective creep pinning behavior was found with increasing themagnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[215.0, 14, 'T', 5],[129.0, 1, 'K', 3]

H
###Transport and pinning properties of Ag-doped FeSe0.94|E. Nazarova,N. Balchev,K. Nenkov,K. Buchkov,D. Kovacheva,A. Zahariev,G. Fuchs###
(1022319, 1022319)
From the activation energy U vs H dependence, a crossover from single-vortexpinning to a collective creep pinning behavior was found with increasing themagnetic field.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[219.0, 14, 'T', 5],[133.0, 1, 'K', 3]

FeSi
###Resonant Charge Relaxation as a Likely Source of the Enhanced Thermopower in FeSi|Peijie Sun,Beipei Wei,Dirk Menzel,Frank Steglich###
(1022397, 1022398)
Resonant Charge Relaxation as a Likely Source of the Enhanced Thermopower in FeSi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 1, 'cm', 2]

FeSi
###Resonant Charge Relaxation as a Likely Source of the Enhanced Thermopower in FeSi|Peijie Sun,Beipei Wei,Dirk Menzel,Frank Steglich###
(1022415, 1022416)
 The enhanced thermopower of the correlated semiconductor FeSi is found to berobust against the sign of the relevant charge carriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 1, 'cm', 1]

At
###Resonant Charge Relaxation as a Likely Source of the Enhanced Thermopower in FeSi|Peijie Sun,Beipei Wei,Dirk Menzel,Frank Steglich###
(1022446, 1022446)
 At T<missing VAR>,approx,70K, the position of both the high-temperature shoulder of the thermopower peakand the nonmagnetic-enhanced paramagnetic crossover, the Nernst coefficientnu assumes a large maximum and the Hall mobility mu H diminishes tobelow 1 cm2/Vs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 1, 'cm', 0]

K
###Resonant Charge Relaxation as a Likely Source of the Enhanced Thermopower in FeSi|Peijie Sun,Beipei Wei,Dirk Menzel,Frank Steglich###
(1022455, 1022455)
 At T<missing VAR>,approx,70K, the position of both the high-temperature shoulder of the thermopower peakand the nonmagnetic-enhanced paramagnetic crossover, the Nernst coefficientnu assumes a large maximum and the Hall mobility mu H diminishes tobelow 1 cm2/Vs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 1, 'cm', 0]

H
###Resonant Charge Relaxation as a Likely Source of the Enhanced Thermopower in FeSi|Peijie Sun,Beipei Wei,Dirk Menzel,Frank Steglich###
(1022523, 1022523)
 At T<missing VAR>,approx,70K, the position of both the high-temperature shoulder of the thermopower peakand the nonmagnetic-enhanced paramagnetic crossover, the Nernst coefficientnu assumes a large maximum and the Hall mobility mu H diminishes tobelow 1 cm2/Vs.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 1, 'cm', 0]

H
###Resonant Charge Relaxation as a Likely Source of the Enhanced Thermopower in FeSi|Peijie Sun,Beipei Wei,Dirk Menzel,Frank Steglich###
(1022552, 1022552)
 These cause the dimension-less ratio nu/muH - ameasure of the energy dispersion of the charge scattering time tau(epsilon)- to exceed that of classical metals and semiconductors by two orders ofmagnitude.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 1, 'cm', 1]

FeSi
###Resonant Charge Relaxation as a Likely Source of the Enhanced Thermopower in FeSi|Peijie Sun,Beipei Wei,Dirk Menzel,Frank Steglich###
(1022702, 1022703)
 Our observations hint at a resonantscattering of the charge carriers at the magnetic crossover, imposing strongconstraints on the microscopic interpretation of the robust thermopowerenhancement in FeSi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[171.0, 1, 'cm', 3]

Mn2CoAl
###Magneto-transport properties of oriented Mn2CoAl films sputtered on thermally oxidized Si substrates|G. Z. Xu,Y. Du,X. M. Zhang,H. G. Zhang,E. K. Liu,W. H. Wang,G. H. Wu###
(1022724, 1022727)
Magneto-transport properties of oriented Mn2CoAl films sputtered on thermally oxidized Si substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 673, 'K', 4]

Si
###Magneto-transport properties of oriented Mn2CoAl films sputtered on thermally oxidized Si substrates|G. Z. Xu,Y. Du,X. M. Zhang,H. G. Zhang,E. K. Liu,W. H. Wang,G. H. Wu###
(1022739, 1022739)
Magneto-transport properties of oriented Mn2CoAl films sputtered on thermally oxidized Si substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 673, 'K', 4]

In
###Magneto-transport properties of oriented Mn2CoAl films sputtered on thermally oxidized Si substrates|G. Z. Xu,Y. Du,X. M. Zhang,H. G. Zhang,E. K. Liu,W. H. Wang,G. H. Wu###
(1022802, 1022802)
 In this letter, wereport a successful growth of spin gapless Mn2CoAl films on thermally oxidizedSi substrates by magnetron sputtering deposition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 673, 'K', 1]

Mn2CoAl
###Magneto-transport properties of oriented Mn2CoAl films sputtered on thermally oxidized Si substrates|G. Z. Xu,Y. Du,X. M. Zhang,H. G. Zhang,E. K. Liu,W. H. Wang,G. H. Wu###
(1022826, 1022829)
 In this letter, wereport a successful growth of spin gapless Mn2CoAl films on thermally oxidizedSi substrates by magnetron sputtering deposition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 673, 'K', 1]

Si
###Magneto-transport properties of oriented Mn2CoAl films sputtered on thermally oxidized Si substrates|G. Z. Xu,Y. Du,X. M. Zhang,H. G. Zhang,E. K. Liu,W. H. Wang,G. H. Wu###
(1022840, 1022840)
 In this letter, wereport a successful growth of spin gapless Mn2CoAl films on thermally oxidizedSi substrates by magnetron sputtering deposition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 673, 'K', 1]

Mn2CoAl
###Magneto-transport properties of oriented Mn2CoAl films sputtered on thermally oxidized Si substrates|G. Z. Xu,Y. Du,X. M. Zhang,H. G. Zhang,E. K. Liu,W. H. Wang,G. H. Wu###
(1022988, 1022991)
 The magnetic properties of the films have also beeninvestigated and compared to that of bulk Mn2CoAl, with small discrepancyinduced by the composition deviation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 673, 'K', 2]

TlBiSSe
###Large linear magnetoresistance in the Dirac semimetal TlBiSSe|Mario Novak,Satoshi Sasaki,Kouji Segawa,Yoichi Ando###
(1023325, 1023328)
Large linear magnetoresistance in the Dirac semimetal TlBiSSe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 3, 'D', 2],[108.0, 10, ',', 3],[110.0, 0, '%', 3],[114.0, 14, 'T', 3],[117.0, 1.8, 'K', 3],[127.0, 30, 'K', 3],[259.0, 3, 'D', 5]

TlBiSSe
###Large linear magnetoresistance in the Dirac semimetal TlBiSSe|Mario Novak,Satoshi Sasaki,Kouji Segawa,Yoichi Ando###
(1023339, 1023342)
 The mixed-chalcogenide compound TlBiSSe realizes a three-dimensional (3D)Dirac semimetal state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 3, 'D', 1],[94.0, 10, ',', 2],[96.0, 0, '%', 2],[100.0, 14, 'T', 2],[103.0, 1.8, 'K', 2],[113.0, 30, 'K', 2],[245.0, 3, 'D', 4]

In
###Large linear magnetoresistance in the Dirac semimetal TlBiSSe|Mario Novak,Satoshi Sasaki,Kouji Segawa,Yoichi Ando###
(1023365, 1023365)
 In clean, low-carrier-density single crystals of thismaterial, we found Shubnikov-de Haas oscillations to signify its 3D Diracnature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 3, 'D', 0],[71.0, 10, ',', 1],[73.0, 0, '%', 1],[77.0, 14, 'T', 1],[80.0, 1.8, 'K', 1],[90.0, 30, 'K', 1],[222.0, 3, 'D', 3]

TlBiSSe
###Large linear magnetoresistance in the Dirac semimetal TlBiSSe|Mario Novak,Satoshi Sasaki,Kouji Segawa,Yoichi Ando###
(1023549, 1023552)
 Ouranalysis of the magnetotransport data points to the possibility that the linearMR is fundamentally governed by the Hall field; although such a situation hasbeen predicted for highly-inhomogeneous systems, inhomogeneity does not seem toplay an important role in TlBiSSe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 3, 'D', 2],[113.0, 10, ',', 1],[111.0, 0, '%', 1],[107.0, 14, 'T', 1],[104.0, 1.8, 'K', 1],[94.0, 30, 'K', 1],[35.0, 3, 'D', 1]

SnTe
###Weak antilocalization in (111) thin films of a topological crystalline insulator SnTe|Ryota Akiyama,Kazuki Fujisawa,Ryutaro Sakurai,Shinji Kuroda###
(1023626, 1023627)
Weak antilocalization in (111) thin films of a topological crystalline insulator SnTe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 3, 'K', 2],[145.0, 10, 'K', 2]

I
###Weak antilocalization in (111) thin films of a topological crystalline insulator SnTe|Ryota Akiyama,Kazuki Fujisawa,Ryutaro Sakurai,Shinji Kuroda###
(1023656, 1023656)
 We grew single-crystal thin films of a topological crystalline insulator(T<missing VAR>CI) SnTe with a smooth surface at the atomic scale by molecular beam epitaxy(MBE).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 3, 'K', 1],[116.0, 10, 'K', 1]

SnTe
###Weak antilocalization in (111) thin films of a topological crystalline insulator SnTe|Ryota Akiyama,Kazuki Fujisawa,Ryutaro Sakurai,Shinji Kuroda###
(1023659, 1023660)
 We grew single-crystal thin films of a topological crystalline insulator(T<missing VAR>CI) SnTe with a smooth surface at the atomic scale by molecular beam epitaxy(MBE).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 3, 'K', 1],[112.0, 10, 'K', 1]

In
###Weak antilocalization in (111) thin films of a topological crystalline insulator SnTe|Ryota Akiyama,Kazuki Fujisawa,Ryutaro Sakurai,Shinji Kuroda###
(1023694, 1023694)
 In the magnetoresistance (MR) measurement, we observed both positive andnegative components near zero magnetic field at lowest temperatures of 2 - 3 K,while we observed only a negative MR at elevated temperatures of 6 - 10 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 3, 'K', 0],[78.0, 10, 'K', 0]

W
###Weak antilocalization in (111) thin films of a topological crystalline insulator SnTe|Ryota Akiyama,Kazuki Fujisawa,Ryutaro Sakurai,Shinji Kuroda###
(1023796, 1023796)
 Thepositive MR is attributed to the weak antilocalization (WAL) in the transportthrough the topological surface state (SS), demonstrating pi berry phasewhich is essential to the topological SS, while the negative MR to the weaklocalization (WL) in the transport through the bulk state (two-dimensional bulksubbbands).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 3, 'K', 1],[24.0, 10, 'K', 1]

(SS)
###Weak antilocalization in (111) thin films of a topological crystalline insulator SnTe|Ryota Akiyama,Kazuki Fujisawa,Ryutaro Sakurai,Shinji Kuroda###
(1023818, 1023821)
 Thepositive MR is attributed to the weak antilocalization (WAL) in the transportthrough the topological surface state (SS), demonstrating pi berry phasewhich is essential to the topological SS, while the negative MR to the weaklocalization (WL) in the transport through the bulk state (two-dimensional bulksubbbands).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 3, 'K', 1],[46.0, 10, 'K', 1]

SS
###Weak antilocalization in (111) thin films of a topological crystalline insulator SnTe|Ryota Akiyama,Kazuki Fujisawa,Ryutaro Sakurai,Shinji Kuroda###
(1023845, 1023846)
 Thepositive MR is attributed to the weak antilocalization (WAL) in the transportthrough the topological surface state (SS), demonstrating pi berry phasewhich is essential to the topological SS, while the negative MR to the weaklocalization (WL) in the transport through the bulk state (two-dimensional bulksubbbands).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 3, 'K', 1],[73.0, 10, 'K', 1]

W
###Weak antilocalization in (111) thin films of a topological crystalline insulator SnTe|Ryota Akiyama,Kazuki Fujisawa,Ryutaro Sakurai,Shinji Kuroda###
(1023868, 1023868)
 Thepositive MR is attributed to the weak antilocalization (WAL) in the transportthrough the topological surface state (SS), demonstrating pi berry phasewhich is essential to the topological SS, while the negative MR to the weaklocalization (WL) in the transport through the bulk state (two-dimensional bulksubbbands).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 3, 'K', 1],[96.0, 10, 'K', 1]

SS
###Weak antilocalization in (111) thin films of a topological crystalline insulator SnTe|Ryota Akiyama,Kazuki Fujisawa,Ryutaro Sakurai,Shinji Kuroda###
(1023973, 1023974)
 The absolute value of the prefactor  alpha  deduced from thefitting of the observed positive MR to the Hikami-Larkin-Nagaoka equation wasmuch smaller than expected from the number of transport channel of the SS,suggesting the coupling of the SS to the bulk state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[231.0, 3, 'K', 2],[201.0, 10, 'K', 2]

SS
###Weak antilocalization in (111) thin films of a topological crystalline insulator SnTe|Ryota Akiyama,Kazuki Fujisawa,Ryutaro Sakurai,Shinji Kuroda###
(1023988, 1023989)
 The absolute value of the prefactor  alpha  deduced from thefitting of the observed positive MR to the Hikami-Larkin-Nagaoka equation wasmuch smaller than expected from the number of transport channel of the SS,suggesting the coupling of the SS to the bulk state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[246.0, 3, 'K', 2],[216.0, 10, 'K', 2]

V
###Superconducting properties in tantalum decorated three-dimensional graphene and carbon structures|Cayetano S. F. Cobaleda,Xiaoyin Xiao,D. Bruce Burckel,Ronen Polsky,Duanni Huang,Enrique Diez,W. Pan###
(1024474, 1024474)
 We have further measured the magnetoresistance at varioustemperatures and differential resistance d<missing VAR>V/d<missing VAR>I at different magnetic fields inthese two composite thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 1.2, 'K', 1],[33.0, 1.0, 'K', 1],[48.0, 2, 'Tesla', 1],[106.0, 3, 'DG', 2]

I
###Superconducting properties in tantalum decorated three-dimensional graphene and carbon structures|Cayetano S. F. Cobaleda,Xiaoyin Xiao,D. Bruce Burckel,Ronen Polsky,Duanni Huang,Enrique Diez,W. Pan###
(1024477, 1024477)
 We have further measured the magnetoresistance at varioustemperatures and differential resistance d<missing VAR>V/d<missing VAR>I at different magnetic fields inthese two composite thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 1.2, 'K', 1],[36.0, 1.0, 'K', 1],[45.0, 2, 'Tesla', 1],[103.0, 3, 'DG', 2]

In
###Superconducting properties in tantalum decorated three-dimensional graphene and carbon structures|Cayetano S. F. Cobaleda,Xiaoyin Xiao,D. Bruce Burckel,Ronen Polsky,Duanni Huang,Enrique Diez,W. Pan###
(1024501, 1024501)
 In both samples, a much large critical magneticfield ( 2 Tesla) is observed and this critical magnetic field shows lineartemperature dependence.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 1.2, 'K', 2],[60.0, 1.0, 'K', 2],[21.0, 2, 'Tesla', 0],[79.0, 3, 'DG', 1]

GaAs
###Electrical detection of ferromagnetic resonance in ferromagnet/n-GaAs heterostructures by tunneling anisotropic magnetoresistance|Changjiang Liu,Yakov Boyko,Chad Geppert,Kevin Christie,Gordon Stecklein,Sahil Patel,Chris Palmstrøm,Paul Crowell###
(1024648, 1024649)
Electrical detection of ferromagnetic resonance in ferromagnet/n<missing VAR>-GaAs heterostructures by tunneling anisotropic magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Electrical detection of ferromagnetic resonance in ferromagnet/n-GaAs heterostructures by tunneling anisotropic magnetoresistance|Changjiang Liu,Yakov Boyko,Chad Geppert,Kevin Christie,Gordon Stecklein,Sahil Patel,Chris Palmstrøm,Paul Crowell###
(1024681, 1024681)
 We observe a dc voltage peak at ferromagnetic resonance (FMR) in samplesconsisting of a single ferromagnetic (FM) layer grown epitaxially on themathitn<missing VAR>-GaAs (001) surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Electrical detection of ferromagnetic resonance in ferromagnet/n-GaAs heterostructures by tunneling anisotropic magnetoresistance|Changjiang Liu,Yakov Boyko,Chad Geppert,Kevin Christie,Gordon Stecklein,Sahil Patel,Chris Palmstrøm,Paul Crowell###
(1024702, 1024702)
 We observe a dc voltage peak at ferromagnetic resonance (FMR) in samplesconsisting of a single ferromagnetic (FM) layer grown epitaxially on themathitn<missing VAR>-GaAs (001) surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Electrical detection of ferromagnetic resonance in ferromagnet/n-GaAs heterostructures by tunneling anisotropic magnetoresistance|Changjiang Liu,Yakov Boyko,Chad Geppert,Kevin Christie,Gordon Stecklein,Sahil Patel,Chris Palmstrøm,Paul Crowell###
(1024720, 1024721)
 We observe a dc voltage peak at ferromagnetic resonance (FMR) in samplesconsisting of a single ferromagnetic (FM) layer grown epitaxially on themathitn<missing VAR>-GaAs (001) surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Electrical detection of ferromagnetic resonance in ferromagnet/n-GaAs heterostructures by tunneling anisotropic magnetoresistance|Changjiang Liu,Yakov Boyko,Chad Geppert,Kevin Christie,Gordon Stecklein,Sahil Patel,Chris Palmstrøm,Paul Crowell###
(1024732, 1024732)
 The FMR peak is detected as an interfacialvoltage with a symmetric line shape and is present in samples based on variousFM/n-GaAs hetrostructures, including Co2MnSi/n<missing VAR>-GaAs,Co2FeSi/n<missing VAR>-GaAs and Fe/n<missing VAR>-GaAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Electrical detection of ferromagnetic resonance in ferromagnet/n-GaAs heterostructures by tunneling anisotropic magnetoresistance|Changjiang Liu,Yakov Boyko,Chad Geppert,Kevin Christie,Gordon Stecklein,Sahil Patel,Chris Palmstrøm,Paul Crowell###
(1024778, 1024778)
 The FMR peak is detected as an interfacialvoltage with a symmetric line shape and is present in samples based on variousFM/n-GaAs hetrostructures, including Co2MnSi/n<missing VAR>-GaAs,Co2FeSi/n<missing VAR>-GaAs and Fe/n<missing VAR>-GaAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Electrical detection of ferromagnetic resonance in ferromagnet/n-GaAs heterostructures by tunneling anisotropic magnetoresistance|Changjiang Liu,Yakov Boyko,Chad Geppert,Kevin Christie,Gordon Stecklein,Sahil Patel,Chris Palmstrøm,Paul Crowell###
(1024783, 1024784)
 The FMR peak is detected as an interfacialvoltage with a symmetric line shape and is present in samples based on variousFM/n-GaAs hetrostructures, including Co2MnSi/n<missing VAR>-GaAs,Co2FeSi/n<missing VAR>-GaAs and Fe/n<missing VAR>-GaAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co2MnSi
###Electrical detection of ferromagnetic resonance in ferromagnet/n-GaAs heterostructures by tunneling anisotropic magnetoresistance|Changjiang Liu,Yakov Boyko,Chad Geppert,Kevin Christie,Gordon Stecklein,Sahil Patel,Chris Palmstrøm,Paul Crowell###
(1024791, 1024794)
 The FMR peak is detected as an interfacialvoltage with a symmetric line shape and is present in samples based on variousFM/n-GaAs hetrostructures, including Co2MnSi/n<missing VAR>-GaAs,Co2FeSi/n<missing VAR>-GaAs and Fe/n<missing VAR>-GaAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Electrical detection of ferromagnetic resonance in ferromagnet/n-GaAs heterostructures by tunneling anisotropic magnetoresistance|Changjiang Liu,Yakov Boyko,Chad Geppert,Kevin Christie,Gordon Stecklein,Sahil Patel,Chris Palmstrøm,Paul Crowell###
(1024798, 1024799)
 The FMR peak is detected as an interfacialvoltage with a symmetric line shape and is present in samples based on variousFM/n-GaAs hetrostructures, including Co2MnSi/n<missing VAR>-GaAs,Co2FeSi/n<missing VAR>-GaAs and Fe/n<missing VAR>-GaAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co2FeSi
###Electrical detection of ferromagnetic resonance in ferromagnet/n-GaAs heterostructures by tunneling anisotropic magnetoresistance|Changjiang Liu,Yakov Boyko,Chad Geppert,Kevin Christie,Gordon Stecklein,Sahil Patel,Chris Palmstrøm,Paul Crowell###
(1024803, 1024806)
 The FMR peak is detected as an interfacialvoltage with a symmetric line shape and is present in samples based on variousFM/n-GaAs hetrostructures, including Co2MnSi/n<missing VAR>-GaAs,Co2FeSi/n<missing VAR>-GaAs and Fe/n<missing VAR>-GaAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0.25,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Electrical detection of ferromagnetic resonance in ferromagnet/n-GaAs heterostructures by tunneling anisotropic magnetoresistance|Changjiang Liu,Yakov Boyko,Chad Geppert,Kevin Christie,Gordon Stecklein,Sahil Patel,Chris Palmstrøm,Paul Crowell###
(1024810, 1024811)
 The FMR peak is detected as an interfacialvoltage with a symmetric line shape and is present in samples based on variousFM/n-GaAs hetrostructures, including Co2MnSi/n<missing VAR>-GaAs,Co2FeSi/n<missing VAR>-GaAs and Fe/n<missing VAR>-GaAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Electrical detection of ferromagnetic resonance in ferromagnet/n-GaAs heterostructures by tunneling anisotropic magnetoresistance|Changjiang Liu,Yakov Boyko,Chad Geppert,Kevin Christie,Gordon Stecklein,Sahil Patel,Chris Palmstrøm,Paul Crowell###
(1024815, 1024815)
 The FMR peak is detected as an interfacialvoltage with a symmetric line shape and is present in samples based on variousFM/n-GaAs hetrostructures, including Co2MnSi/n<missing VAR>-GaAs,Co2FeSi/n<missing VAR>-GaAs and Fe/n<missing VAR>-GaAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Electrical detection of ferromagnetic resonance in ferromagnet/n-GaAs heterostructures by tunneling anisotropic magnetoresistance|Changjiang Liu,Yakov Boyko,Chad Geppert,Kevin Christie,Gordon Stecklein,Sahil Patel,Chris Palmstrøm,Paul Crowell###
(1024819, 1024820)
 The FMR peak is detected as an interfacialvoltage with a symmetric line shape and is present in samples based on variousFM/n-GaAs hetrostructures, including Co2MnSi/n<missing VAR>-GaAs,Co2FeSi/n<missing VAR>-GaAs and Fe/n<missing VAR>-GaAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Electrical detection of ferromagnetic resonance in ferromagnet/n-GaAs heterostructures by tunneling anisotropic magnetoresistance|Changjiang Liu,Yakov Boyko,Chad Geppert,Kevin Christie,Gordon Stecklein,Sahil Patel,Chris Palmstrøm,Paul Crowell###
(1024844, 1024844)
 We show that the interface bias voltagedependence of the FMR signal is identical to that of the tunneling anisotropicmagnetoresistance (TAMR) over most of the bias range.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Electrical detection of ferromagnetic resonance in ferromagnet/n-GaAs heterostructures by tunneling anisotropic magnetoresistance|Changjiang Liu,Yakov Boyko,Chad Geppert,Kevin Christie,Gordon Stecklein,Sahil Patel,Chris Palmstrøm,Paul Crowell###
(1024911, 1024911)
 Furthermore, we show howthe precessing magnetization yields a dc FMR signal through the TAMR effect andhow the TAMR phenomenon can be used to predict the angular dependence of theFMR signal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Electrical detection of ferromagnetic resonance in ferromagnet/n-GaAs heterostructures by tunneling anisotropic magnetoresistance|Changjiang Liu,Yakov Boyko,Chad Geppert,Kevin Christie,Gordon Stecklein,Sahil Patel,Chris Palmstrøm,Paul Crowell###
(1024963, 1024963)
 Furthermore, we show howthe precessing magnetization yields a dc FMR signal through the TAMR effect andhow the TAMR phenomenon can be used to predict the angular dependence of theFMR signal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Electrical detection of ferromagnetic resonance in ferromagnet/n-GaAs heterostructures by tunneling anisotropic magnetoresistance|Changjiang Liu,Yakov Boyko,Chad Geppert,Kevin Christie,Gordon Stecklein,Sahil Patel,Chris Palmstrøm,Paul Crowell###
(1024979, 1024979)
 This TAMR-induced FMR peak can be observed under conditions whereno spin accumulation is present and no spin-polarized current flows in thesemiconductor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Theoretical Details of Tunnel Magnetoresistance via inelastic hopping at regime $gμB\ll k_B T \ll eV$|Yang Song###
(1025441, 1025441)
Theoretical Details of Tunnel Magnetoresistance via inelastic hopping at regime g<missing VAR>Bll k<missing VAR>B T<missing VAR> ll e<missing VAR>V.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Theoretical Details of Tunnel Magnetoresistance via inelastic hopping at regime $gμB\ll k_B T \ll eV$|Yang Song###
(1025445, 1025445)
Theoretical Details of Tunnel Magnetoresistance via inelastic hopping at regime g<missing VAR>Bll k<missing VAR>B T<missing VAR> ll e<missing VAR>V.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Theoretical Details of Tunnel Magnetoresistance via inelastic hopping at regime $gμB\ll k_B T \ll eV$|Yang Song###
(1025452, 1025452)
Theoretical Details of Tunnel Magnetoresistance via inelastic hopping at regime g<missing VAR>Bll k<missing VAR>B T<missing VAR> ll e<missing VAR>V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Strain-enhanced tunneling magnetoresistance in MgO magnetic tunnel junctions|Li Ming Loong,Xuepeng Qiu,Zhi Peng Neo,Praveen Deorani,Yang Wu,Charanjit S. Bhatia,Mark Saeys,Hyunsoo Yang###
(1025754, 1025755)
Strain-enhanced tunneling magnetoresistance in MgO magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Strain-enhanced tunneling magnetoresistance in MgO magnetic tunnel junctions|Li Ming Loong,Xuepeng Qiu,Zhi Peng Neo,Praveen Deorani,Yang Wu,Charanjit S. Bhatia,Mark Saeys,Hyunsoo Yang###
(1025988, 1025989)
 We furthercorrelate this strain-enhanced TMR with coherent spin tunneling through the MgObarrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Strain-enhanced tunneling magnetoresistance in MgO magnetic tunnel junctions|Li Ming Loong,Xuepeng Qiu,Zhi Peng Neo,Praveen Deorani,Yang Wu,Charanjit S. Bhatia,Mark Saeys,Hyunsoo Yang###
(1026025, 1026025)
 Moreover, the strain-enhanced TMR is analyzed using non-equilibriumGreens<missing VAR> function (NEGF) quantum transport calculations.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Strain-enhanced tunneling magnetoresistance in MgO magnetic tunnel junctions|Li Ming Loong,Xuepeng Qiu,Zhi Peng Neo,Praveen Deorani,Yang Wu,Charanjit S. Bhatia,Mark Saeys,Hyunsoo Yang###
(1026028, 1026028)
 Moreover, the strain-enhanced TMR is analyzed using non-equilibriumGreens<missing VAR> function (NEGF) quantum transport calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SS
###Simultaneous detection of the spin-Hall magnetoresistance and the spin-Seebeck effect in Platinum and Tantalum on Yttrium Iron Garnet|N. Vlietstra,M. Isasa,J. Shan,J. Ben Youssef,F. Casanova,B. J. van Wees###
(1026166, 1026167)
 The spin-Seebeck effect (SSE) in platinum (Pt) and tantalum (Ta) on yttriumiron garnet (YIG) has been investigated by both externally heating the sample(using an on-chip Pt heater on top of the device) as well as by current-inducedheating.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[223.0, 2, 'nd', 3]

(Pt)
###Simultaneous detection of the spin-Hall magnetoresistance and the spin-Seebeck effect in Platinum and Tantalum on Yttrium Iron Garnet|N. Vlietstra,M. Isasa,J. Shan,J. Ben Youssef,F. Casanova,B. J. van Wees###
(1026175, 1026177)
 The spin-Seebeck effect (SSE) in platinum (Pt) and tantalum (Ta) on yttriumiron garnet (YIG) has been investigated by both externally heating the sample(using an on-chip Pt heater on top of the device) as well as by current-inducedheating.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[213.0, 2, 'nd', 3]

(Ta)
###Simultaneous detection of the spin-Hall magnetoresistance and the spin-Seebeck effect in Platinum and Tantalum on Yttrium Iron Garnet|N. Vlietstra,M. Isasa,J. Shan,J. Ben Youssef,F. Casanova,B. J. van Wees###
(1026183, 1026185)
 The spin-Seebeck effect (SSE) in platinum (Pt) and tantalum (Ta) on yttriumiron garnet (YIG) has been investigated by both externally heating the sample(using an on-chip Pt heater on top of the device) as well as by current-inducedheating.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, 2, 'nd', 3]

YI
###Simultaneous detection of the spin-Hall magnetoresistance and the spin-Seebeck effect in Platinum and Tantalum on Yttrium Iron Garnet|N. Vlietstra,M. Isasa,J. Shan,J. Ben Youssef,F. Casanova,B. J. van Wees###
(1026197, 1026198)
 The spin-Seebeck effect (SSE) in platinum (Pt) and tantalum (Ta) on yttriumiron garnet (YIG) has been investigated by both externally heating the sample(using an on-chip Pt heater on top of the device) as well as by current-inducedheating.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[192.0, 2, 'nd', 3]

Pt
###Simultaneous detection of the spin-Hall magnetoresistance and the spin-Seebeck effect in Platinum and Tantalum on Yttrium Iron Garnet|N. Vlietstra,M. Isasa,J. Shan,J. Ben Youssef,F. Casanova,B. J. van Wees###
(1026230, 1026230)
 The spin-Seebeck effect (SSE) in platinum (Pt) and tantalum (Ta) on yttriumiron garnet (YIG) has been investigated by both externally heating the sample(using an on-chip Pt heater on top of the device) as well as by current-inducedheating.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 2, 'nd', 3]

SS
###Simultaneous detection of the spin-Hall magnetoresistance and the spin-Seebeck effect in Platinum and Tantalum on Yttrium Iron Garnet|N. Vlietstra,M. Isasa,J. Shan,J. Ben Youssef,F. Casanova,B. J. van Wees###
(1026263, 1026264)
 For SSE<missing VAR> measurements, external heating is the most common method toobtain clear signals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 2, 'nd', 2]

SS
###Simultaneous detection of the spin-Hall magnetoresistance and the spin-Seebeck effect in Platinum and Tantalum on Yttrium Iron Garnet|N. Vlietstra,M. Isasa,J. Shan,J. Ben Youssef,F. Casanova,B. J. van Wees###
(1026327, 1026328)
 Here we show that also by current-induced heating it ispossible to directly observe the SSE<missing VAR>, separate from the also present spin-Hallmagnetoresistance (SMR) signal, by using a lock-in detection technique.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 2, 'nd', 1]

S
###Simultaneous detection of the spin-Hall magnetoresistance and the spin-Seebeck effect in Platinum and Tantalum on Yttrium Iron Garnet|N. Vlietstra,M. Isasa,J. Shan,J. Ben Youssef,F. Casanova,B. J. van Wees###
(1026350, 1026350)
 Here we show that also by current-induced heating it ispossible to directly observe the SSE<missing VAR>, separate from the also present spin-Hallmagnetoresistance (SMR) signal, by using a lock-in detection technique.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 2, 'nd', 1]

C
###Simultaneous detection of the spin-Hall magnetoresistance and the spin-Seebeck effect in Platinum and Tantalum on Yttrium Iron Garnet|N. Vlietstra,M. Isasa,J. Shan,J. Ben Youssef,F. Casanova,B. J. van Wees###
(1026455, 1026455)
 These signalsare caused by current-induced magnetic fields (Oersted fields) generated by theused AC-current, resulting in dynamic SMR signals.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 2, 'nd', 1]

S
###Simultaneous detection of the spin-Hall magnetoresistance and the spin-Seebeck effect in Platinum and Tantalum on Yttrium Iron Garnet|N. Vlietstra,M. Isasa,J. Shan,J. Ben Youssef,F. Casanova,B. J. van Wees###
(1026466, 1026466)
 These signalsare caused by current-induced magnetic fields (Oersted fields) generated by theused AC-current, resulting in dynamic SMR signals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 2, 'nd', 1]

La1-x
###Polaron-mediated spin correlations in metallic and insulating La$_{1-x}A_{x}$MnO$_{3}$ ($A$=Ca, Sr, or Ba)|Joel S. Helton,Daniel M. Pajerowski,Yiming Qiu,Yang Zhao,Dmitry A. Shulyatev,Yakov M. Mukovskii,Georgii L. Bychkov,Sergei N. Barilo,Jeffrey W. Lynn###
(1026497, 1026500)
Polaron-mediated spin correlations in metallic and insulating La1-xAx<missing VAR>MnO3 (ACa, Sr, or Ba).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

MnO3
###Polaron-mediated spin correlations in metallic and insulating La$_{1-x}A_{x}$MnO$_{3}$ ($A$=Ca, Sr, or Ba)|Joel S. Helton,Daniel M. Pajerowski,Yiming Qiu,Yang Zhao,Dmitry A. Shulyatev,Yakov M. Mukovskii,Georgii L. Bychkov,Sergei N. Barilo,Jeffrey W. Lynn###
(1026503, 1026505)
Polaron-mediated spin correlations in metallic and insulating La1-xAx<missing VAR>MnO3 (ACa, Sr, or Ba).
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ca
###Polaron-mediated spin correlations in metallic and insulating La$_{1-x}A_{x}$MnO$_{3}$ ($A$=Ca, Sr, or Ba)|Joel S. Helton,Daniel M. Pajerowski,Yiming Qiu,Yang Zhao,Dmitry A. Shulyatev,Yakov M. Mukovskii,Georgii L. Bychkov,Sergei N. Barilo,Jeffrey W. Lynn###
(1026509, 1026509)
Polaron-mediated spin correlations in metallic and insulating La1-xAx<missing VAR>MnO3 (ACa, Sr, or Ba).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr
###Polaron-mediated spin correlations in metallic and insulating La$_{1-x}A_{x}$MnO$_{3}$ ($A$=Ca, Sr, or Ba)|Joel S. Helton,Daniel M. Pajerowski,Yiming Qiu,Yang Zhao,Dmitry A. Shulyatev,Yakov M. Mukovskii,Georgii L. Bychkov,Sergei N. Barilo,Jeffrey W. Lynn###
(1026512, 1026512)
Polaron-mediated spin correlations in metallic and insulating La1-xAx<missing VAR>MnO3 (ACa, Sr, or Ba).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ba
###Polaron-mediated spin correlations in metallic and insulating La$_{1-x}A_{x}$MnO$_{3}$ ($A$=Ca, Sr, or Ba)|Joel S. Helton,Daniel M. Pajerowski,Yiming Qiu,Yang Zhao,Dmitry A. Shulyatev,Yakov M. Mukovskii,Georgii L. Bychkov,Sergei N. Barilo,Jeffrey W. Lynn###
(1026517, 1026517)
Polaron-mediated spin correlations in metallic and insulating La1-xAx<missing VAR>MnO3 (ACa, Sr, or Ba).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La1-x
###Polaron-mediated spin correlations in metallic and insulating La$_{1-x}A_{x}$MnO$_{3}$ ($A$=Ca, Sr, or Ba)|Joel S. Helton,Daniel M. Pajerowski,Yiming Qiu,Yang Zhao,Dmitry A. Shulyatev,Yakov M. Mukovskii,Georgii L. Bychkov,Sergei N. Barilo,Jeffrey W. Lynn###
(1026567, 1026570)
 Neutron spectroscopy measurements reveal short-range spin correlations nearand above the ferromagnetic-paramagnetic phase transition in manganitematerials of the form La1-xAx<missing VAR>MnO3, including samples with aninsulating ground state as well as colossal magnetoresistive samples with ametallic ground state.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

MnO3
###Polaron-mediated spin correlations in metallic and insulating La$_{1-x}A_{x}$MnO$_{3}$ ($A$=Ca, Sr, or Ba)|Joel S. Helton,Daniel M. Pajerowski,Yiming Qiu,Yang Zhao,Dmitry A. Shulyatev,Yakov M. Mukovskii,Georgii L. Bychkov,Sergei N. Barilo,Jeffrey W. Lynn###
(1026573, 1026575)
 Neutron spectroscopy measurements reveal short-range spin correlations nearand above the ferromagnetic-paramagnetic phase transition in manganitematerials of the form La1-xAx<missing VAR>MnO3, including samples with aninsulating ground state as well as colossal magnetoresistive samples with ametallic ground state.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Polaron-mediated spin correlations in metallic and insulating La$_{1-x}A_{x}$MnO$_{3}$ ($A$=Ca, Sr, or Ba)|Joel S. Helton,Daniel M. Pajerowski,Yiming Qiu,Yang Zhao,Dmitry A. Shulyatev,Yakov M. Mukovskii,Georgii L. Bychkov,Sergei N. Barilo,Jeffrey W. Lynn###
(1026683, 1026683)
 Asimple model consisting of a conduction electron hopping between spin polarizedMn ions that becomes self-trapped after a few hops captures the essentialphysics of this magnetic component of the scattering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeS
###Pressure-dependent magnetization and magnetoresistivity studies on the tetragonal FeS (mackinawite): revealing its intrinsic metallic character|S. J. Denholme,H. Okazaki,S. Demura,K. Deguchi,M. Fujioka,T. Yamaguchi,H. Takeya,M. ElMassalami,H. Fujiwara,T. Wakita,T. Yokoya,Y. Takano###
(1026818, 1026819)
Pressure-dependent magnetization and magnetoresistivity studies on the tetragonal FeS (mackinawite) revealing its intrinsic metallic character.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 3.0, 'GPa', 1]

Fe1
###Pressure-dependent magnetization and magnetoresistivity studies on the tetragonal FeS (mackinawite): revealing its intrinsic metallic character|S. J. Denholme,H. Okazaki,S. Demura,K. Deguchi,M. Fujioka,T. Yamaguchi,H. Takeya,M. ElMassalami,H. Fujiwara,T. Wakita,T. Yokoya,Y. Takano###
(1026852, 1026853)
 The transport and magnetic properties of the tetragonal Fe1deltaS wereinvestigated using magnetoresistivity and magnetization within 2leq T<missing VAR>leq300 K, Hleq70 k<missing VAR>Oe and Pleq 3.0 GPa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 3.0, 'GPa', 0]

S
###Pressure-dependent magnetization and magnetoresistivity studies on the tetragonal FeS (mackinawite): revealing its intrinsic metallic character|S. J. Denholme,H. Okazaki,S. Demura,K. Deguchi,M. Fujioka,T. Yamaguchi,H. Takeya,M. ElMassalami,H. Fujiwara,T. Wakita,T. Yokoya,Y. Takano###
(1026855, 1026855)
 The transport and magnetic properties of the tetragonal Fe1deltaS wereinvestigated using magnetoresistivity and magnetization within 2leq T<missing VAR>leq300 K, Hleq70 k<missing VAR>Oe and Pleq 3.0 GPa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 3.0, 'GPa', 0]

K
###Pressure-dependent magnetization and magnetoresistivity studies on the tetragonal FeS (mackinawite): revealing its intrinsic metallic character|S. J. Denholme,H. Okazaki,S. Demura,K. Deguchi,M. Fujioka,T. Yamaguchi,H. Takeya,M. ElMassalami,H. Fujiwara,T. Wakita,T. Yokoya,Y. Takano###
(1026881, 1026881)
 The transport and magnetic properties of the tetragonal Fe1deltaS wereinvestigated using magnetoresistivity and magnetization within 2leq T<missing VAR>leq300 K, Hleq70 k<missing VAR>Oe and Pleq 3.0 GPa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 3.0, 'GPa', 0]

H
###Pressure-dependent magnetization and magnetoresistivity studies on the tetragonal FeS (mackinawite): revealing its intrinsic metallic character|S. J. Denholme,H. Okazaki,S. Demura,K. Deguchi,M. Fujioka,T. Yamaguchi,H. Takeya,M. ElMassalami,H. Fujiwara,T. Wakita,T. Yokoya,Y. Takano###
(1026884, 1026884)
 The transport and magnetic properties of the tetragonal Fe1deltaS wereinvestigated using magnetoresistivity and magnetization within 2leq T<missing VAR>leq300 K, Hleq70 k<missing VAR>Oe and Pleq 3.0 GPa.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 3.0, 'GPa', 0]

P
###Pressure-dependent magnetization and magnetoresistivity studies on the tetragonal FeS (mackinawite): revealing its intrinsic metallic character|S. J. Denholme,H. Okazaki,S. Demura,K. Deguchi,M. Fujioka,T. Yamaguchi,H. Takeya,M. ElMassalami,H. Fujiwara,T. Wakita,T. Yokoya,Y. Takano###
(1026893, 1026893)
 The transport and magnetic properties of the tetragonal Fe1deltaS wereinvestigated using magnetoresistivity and magnetization within 2leq T<missing VAR>leq300 K, Hleq70 k<missing VAR>Oe and Pleq 3.0 GPa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 3.0, 'GPa', 0]

In
###Pressure-dependent magnetization and magnetoresistivity studies on the tetragonal FeS (mackinawite): revealing its intrinsic metallic character|S. J. Denholme,H. Okazaki,S. Demura,K. Deguchi,M. Fujioka,T. Yamaguchi,H. Takeya,M. ElMassalami,H. Fujiwara,T. Wakita,T. Yokoya,Y. Takano###
(1026898, 1026898)
 In addition, room-temperature X<missing VAR>-raydiffraction and photoelectron spectroscopy were also applied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 3.0, 'GPa', 1]

In
###Pressure-dependent magnetization and magnetoresistivity studies on the tetragonal FeS (mackinawite): revealing its intrinsic metallic character|S. J. Denholme,H. Okazaki,S. Demura,K. Deguchi,M. Fujioka,T. Yamaguchi,H. Takeya,M. ElMassalami,H. Fujiwara,T. Wakita,T. Yokoya,Y. Takano###
(1026927, 1026927)
 In contrast topreviously reported nonmetallic character, Fe1deltaS is intrinsicallymetallic but due to a presence of a weak localization such metallic characteris not exhibited below room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 3.0, 'GPa', 2]

Fe1
###Pressure-dependent magnetization and magnetoresistivity studies on the tetragonal FeS (mackinawite): revealing its intrinsic metallic character|S. J. Denholme,H. Okazaki,S. Demura,K. Deguchi,M. Fujioka,T. Yamaguchi,H. Takeya,M. ElMassalami,H. Fujiwara,T. Wakita,T. Yokoya,Y. Takano###
(1026943, 1026944)
 In contrast topreviously reported nonmetallic character, Fe1deltaS is intrinsicallymetallic but due to a presence of a weak localization such metallic characteris not exhibited below room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 3.0, 'GPa', 2]

S
###Pressure-dependent magnetization and magnetoresistivity studies on the tetragonal FeS (mackinawite): revealing its intrinsic metallic character|S. J. Denholme,H. Okazaki,S. Demura,K. Deguchi,M. Fujioka,T. Yamaguchi,H. Takeya,M. ElMassalami,H. Fujiwara,T. Wakita,T. Yokoya,Y. Takano###
(1026946, 1026946)
 In contrast topreviously reported nonmetallic character, Fe1deltaS is intrinsicallymetallic but due to a presence of a weak localization such metallic characteris not exhibited below room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 3.0, 'GPa', 2]

Pa
###Pressure-dependent magnetization and magnetoresistivity studies on the tetragonal FeS (mackinawite): revealing its intrinsic metallic character|S. J. Denholme,H. Okazaki,S. Demura,K. Deguchi,M. Fujioka,T. Yamaguchi,H. Takeya,M. ElMassalami,H. Fujiwara,T. Wakita,T. Yokoya,Y. Takano###
(1027044, 1027044)
 An applied pressure reduces stronglythis additional resistive contribution and as such enhances the temperaturerange of the metallic character which, for sim3 G<missing VAR>Pa, is evident down to 75K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 3.0, 'GPa', 3]

K
###Pressure-dependent magnetization and magnetoresistivity studies on the tetragonal FeS (mackinawite): revealing its intrinsic metallic character|S. J. Denholme,H. Okazaki,S. Demura,K. Deguchi,M. Fujioka,T. Yamaguchi,H. Takeya,M. ElMassalami,H. Fujiwara,T. Wakita,T. Yokoya,Y. Takano###
(1027058, 1027058)
 An applied pressure reduces stronglythis additional resistive contribution and as such enhances the temperaturerange of the metallic character which, for sim3 G<missing VAR>Pa, is evident down to 75K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 3.0, 'GPa', 3]

LiFeAs
###Comment on "Multiorbital Effects on the Transport and the Superconducting Fluctuations in LiFeAs"|A. Ramos-Álvarez,J. Mosqueira,F. Vidal###
(1027127, 1027129)
Comment on Multiorbital Effects on the Transport and the Superconducting Fluctuations in LiFeAs.
Featurization terminated normally.
0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 109, ',', 1],[247.0, 3, 'D', 4]

In
###Comment on "Multiorbital Effects on the Transport and the Superconducting Fluctuations in LiFeAs"|A. Ramos-Álvarez,J. Mosqueira,F. Vidal###
(1027132, 1027132)
 In the commented work (PRL 109, 187005 (2012)), Rullier-Albenque et al.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 109, ',', 0],[244.0, 3, 'D', 3]

P
###Comment on "Multiorbital Effects on the Transport and the Superconducting Fluctuations in LiFeAs"|A. Ramos-Álvarez,J. Mosqueira,F. Vidal###
(1027141, 1027141)
 In the commented work (PRL 109, 187005 (2012)), Rullier-Albenque et al.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 109, ',', 0],[235.0, 3, 'D', 3]

Tc
###Comment on "Multiorbital Effects on the Transport and the Superconducting Fluctuations in LiFeAs"|A. Ramos-Álvarez,J. Mosqueira,F. Vidal###
(1027185, 1027185)
present measurements of transverse magnetoresistivity above the transitiontemperature Tc in clean LiFeAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 109, ',', 1],[191.0, 3, 'D', 2]

LiFeAs
###Comment on "Multiorbital Effects on the Transport and the Superconducting Fluctuations in LiFeAs"|A. Ramos-Álvarez,J. Mosqueira,F. Vidal###
(1027191, 1027193)
present measurements of transverse magnetoresistivity above the transitiontemperature Tc in clean LiFeAs.
Featurization terminated normally.
0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 109, ',', 1],[183.0, 3, 'D', 2]

Tc
###Comment on "Multiorbital Effects on the Transport and the Superconducting Fluctuations in LiFeAs"|A. Ramos-Álvarez,J. Mosqueira,F. Vidal###
(1027246, 1027246)
 By analyzing their data, these authors concludethat the conductivity induced by fluctuations follows a two-dimensional (2D)behavior even close to Tc, in spite that for LiFeAs the transverse coherencelength (xic<missing VAR>(0)1.6 nm) is larger than the Fe-layers spacing (s<missing VAR>0.636 nm),which would rather suggest a three-dimensional (3D) behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 109, ',', 2],[130.0, 3, 'D', 1]

LiFeAs
###Comment on "Multiorbital Effects on the Transport and the Superconducting Fluctuations in LiFeAs"|A. Ramos-Álvarez,J. Mosqueira,F. Vidal###
(1027257, 1027259)
 By analyzing their data, these authors concludethat the conductivity induced by fluctuations follows a two-dimensional (2D)behavior even close to Tc, in spite that for LiFeAs the transverse coherencelength (xic<missing VAR>(0)1.6 nm) is larger than the Fe-layers spacing (s<missing VAR>0.636 nm),which would rather suggest a three-dimensional (3D) behavior.
Featurization terminated normally.
0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 109, ',', 2],[117.0, 3, 'D', 1]

Fe
###Comment on "Multiorbital Effects on the Transport and the Superconducting Fluctuations in LiFeAs"|A. Ramos-Álvarez,J. Mosqueira,F. Vidal###
(1027289, 1027289)
 By analyzing their data, these authors concludethat the conductivity induced by fluctuations follows a two-dimensional (2D)behavior even close to Tc, in spite that for LiFeAs the transverse coherencelength (xic<missing VAR>(0)1.6 nm) is larger than the Fe-layers spacing (s<missing VAR>0.636 nm),which would rather suggest a three-dimensional (3D) behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 109, ',', 2],[87.0, 3, 'D', 1]

Tc
###Comment on "Multiorbital Effects on the Transport and the Superconducting Fluctuations in LiFeAs"|A. Ramos-Álvarez,J. Mosqueira,F. Vidal###
(1027385, 1027385)
 This strikingproposal would have deep implications in the theoretical understanding of themultiband structure of iron pnictides, but it also contrasts with the 3Dbehavior observed near Tc in the same compound and in other iron pnictides witheven smaller xic<missing VAR>(0)/s<missing VAR> ratios.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[240.0, 109, ',', 3],[9.0, 3, 'D', 0]

LaAlO3/SrTiO3
###Anomalous magnetic ground state in LaAlO3/SrTiO3 interface probed by transport through nanowires|A. Ron,E. Maniv,D. Graf,J. -H. Park,Y. Dagan###
(1027495, 1027503)
Anomalous magnetic ground state in LaAlO3/SrTiO3 interface probed by transport through nanowires.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[30.0, 20, 'mK', 1],[42.0, 18, 'T', 1],[115.0, 50, 'nm', 2],[227.0, 954, 'mK', 4]

SrTiO3/LaAlO3
###Anomalous magnetic ground state in LaAlO3/SrTiO3 interface probed by transport through nanowires|A. Ron,E. Maniv,D. Graf,J. -H. Park,Y. Dagan###
(1027570, 1027578)
 Resistance as a function of temperature down to 20mK and magnetic fields upto 18T for various carrier concentrations is measured for nanowires made fromthe SrTiO3/LaAlO3 interface using a hard mask shadow deposition technique.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[37.0, 20, 'mK', 0],[25.0, 18, 'T', 0],[40.0, 50, 'nm', 1],[152.0, 954, 'mK', 3]

At
###Anomalous magnetic ground state in LaAlO3/SrTiO3 interface probed by transport through nanowires|A. Ron,E. Maniv,D. Graf,J. -H. Park,Y. Dagan###
(1027658, 1027658)
At this regime hysteresis loops are observed along with the superconductingtransition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 20, 'mK', 2],[113.0, 18, 'T', 2],[40.0, 50, 'nm', 1],[72.0, 954, 'mK', 1]

S
###Calculation of energy-barrier lowering by incoherent switching in STT-MRAM|Kamaram Munira,P. B. Visscher###
(1027804, 1027804)
Calculation of energy-barrier lowering by incoherent switching in STT-MRAM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Calculation of energy-barrier lowering by incoherent switching in STT-MRAM|Kamaram Munira,P. B. Visscher###
(1027822, 1027822)
 To make a useful STT-MRAM<missing VAR> (spin-transfer torque magnetoresistiverandom-access memory) device, it is necessary to be able to calculate switchingrates, which determine the error rates of the device.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Calculation of energy-barrier lowering by incoherent switching in STT-MRAM|Kamaram Munira,P. B. Visscher###
(1027890, 1027890)
 In a single-macrospinmodel, one can use a Fokker-Planck equation to obtain a low-current thermallyactivated rate propto exp(-E<missing VAR>eff/k<missing VAR>B T).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Calculation of energy-barrier lowering by incoherent switching in STT-MRAM|Kamaram Munira,P. B. Visscher###
(1027942, 1027942)
 In a single-macrospinmodel, one can use a Fokker-Planck equation to obtain a low-current thermallyactivated rate propto exp(-E<missing VAR>eff/k<missing VAR>B T).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

KV
###Calculation of energy-barrier lowering by incoherent switching in STT-MRAM|Kamaram Munira,P. B. Visscher###
(1027976, 1027977)
 Here the effective energybarrier E<missing VAR>eff scales with the single-macrospin energy barrier KV, whereK is the effective anisotropy energy density and V the volume.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Calculation of energy-barrier lowering by incoherent switching in STT-MRAM|Kamaram Munira,P. B. Visscher###
(1027983, 1027983)
 Here the effective energybarrier E<missing VAR>eff scales with the single-macrospin energy barrier KV, whereK is the effective anisotropy energy density and V the volume.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Calculation of energy-barrier lowering by incoherent switching in STT-MRAM|Kamaram Munira,P. B. Visscher###
(1027999, 1027999)
 Here the effective energybarrier E<missing VAR>eff scales with the single-macrospin energy barrier KV, whereK is the effective anisotropy energy density and V the volume.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Calculation of energy-barrier lowering by incoherent switching in STT-MRAM|Kamaram Munira,P. B. Visscher###
(1028088, 1028088)
 In the presentpaper, we show that the coherent precession has a magnetostatic instability,which allows quantitative estimation of the energy barrier and may resolve theparadox.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La2CoMnO6
###Investigation of intrinsic magnetodielectric effect in La2CoMnO6: Role of magnetic disorder|J. Krishna Murthya,K. Devi Chandrasekhar S. Murugavel,A. Venimadhav###
(1028168, 1028173)
Investigation of intrinsic magnetodielectric effect in La2CoMnO6 Role of magnetic disorder.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 100, 'kHz', 1],[38.0, 5, 'T', 1]

B
###Investigation of intrinsic magnetodielectric effect in La2CoMnO6: Role of magnetic disorder|J. Krishna Murthya,K. Devi Chandrasekhar S. Murugavel,A. Venimadhav###
(1028218, 1028218)
 We present a large magnetodielectric (MD) effect of 65 % at 100 kHz with 5 Tfield in B-site ordered La2CoMnO6 (LCMO) polycrystalline sample.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 100, 'kHz', 0],[7.0, 5, 'T', 0]

La2CoMnO6
###Investigation of intrinsic magnetodielectric effect in La2CoMnO6: Role of magnetic disorder|J. Krishna Murthya,K. Devi Chandrasekhar S. Murugavel,A. Venimadhav###
(1028224, 1028229)
 We present a large magnetodielectric (MD) effect of 65 % at 100 kHz with 5 Tfield in B-site ordered La2CoMnO6 (LCMO) polycrystalline sample.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 100, 'kHz', 0],[13.0, 5, 'T', 0]

O
###Investigation of intrinsic magnetodielectric effect in La2CoMnO6: Role of magnetic disorder|J. Krishna Murthya,K. Devi Chandrasekhar S. Murugavel,A. Venimadhav###
(1028235, 1028235)
 We present a large magnetodielectric (MD) effect of 65 % at 100 kHz with 5 Tfield in B-site ordered La2CoMnO6 (LCMO) polycrystalline sample.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 100, 'kHz', 0],[24.0, 5, 'T', 0]

O
###Investigation of intrinsic magnetodielectric effect in La2CoMnO6: Role of magnetic disorder|J. Krishna Murthya,K. Devi Chandrasekhar S. Murugavel,A. Venimadhav###
(1028344, 1028344)
 Thetemperature dependent Raman spectroscopy measurement has shown spin-latticecoupling that supports the intrinsic origin of the observed large MD responsein LCMO.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 100, 'kHz', 2],[133.0, 5, 'T', 2]

(Sr)
###Investigation of intrinsic magnetodielectric effect in La2CoMnO6: Role of magnetic disorder|J. Krishna Murthya,K. Devi Chandrasekhar S. Murugavel,A. Venimadhav###
(1028389, 1028391)
 Extrinsic contributions to MD response mainly originate from disorderand interface effects; here, we signify this by hole carrier (Sr) doping at theA-site of the ordered LCMO sample.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 100, 'kHz', 3],[178.0, 5, 'T', 3]

O
###Investigation of intrinsic magnetodielectric effect in La2CoMnO6: Role of magnetic disorder|J. Krishna Murthya,K. Devi Chandrasekhar S. Murugavel,A. Venimadhav###
(1028413, 1028413)
 Extrinsic contributions to MD response mainly originate from disorderand interface effects; here, we signify this by hole carrier (Sr) doping at theA-site of the ordered LCMO sample.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, 100, 'kHz', 3],[202.0, 5, 'T', 3]

Bi
###Unscaling Superconducting Parameters with $T_c$ for Bi-2212 and Bi-2223: A Magnetotransport Study in the Superconductive Fluctuation Regime|Shintaro Adachi,Tomohiro Usui,Hironobu Kudo,Haruki Kushibiki,Kosuke Murata,Takao Watanabe,Kazutaka Kudo,Terukazu Nishizaki,Norio Kobayashi,Shojiro Kimura,Masaki Fujita,Kazuyoshi Yamada,Takashi Noji,Yoji Koike,Takenori Fujii###
(1028512, 1028512)
Unscaling Superconducting Parameters with Tc for Bi-2212 and Bi-2223 A Magnetotransport Study in the Superconductive Fluctuation Regime.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 110, 'K', 1]

Bi
###Unscaling Superconducting Parameters with $T_c$ for Bi-2212 and Bi-2223: A Magnetotransport Study in the Superconductive Fluctuation Regime|Shintaro Adachi,Tomohiro Usui,Hironobu Kudo,Haruki Kushibiki,Kosuke Murata,Takao Watanabe,Kazutaka Kudo,Terukazu Nishizaki,Norio Kobayashi,Shojiro Kimura,Masaki Fujita,Kazuyoshi Yamada,Takashi Noji,Yoji Koike,Takenori Fujii###
(1028518, 1028518)
Unscaling Superconducting Parameters with Tc for Bi-2212 and Bi-2223 A Magnetotransport Study in the Superconductive Fluctuation Regime.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 110, 'K', 1]

Bi2Sr2Ca2Cu3O10
###Unscaling Superconducting Parameters with $T_c$ for Bi-2212 and Bi-2223: A Magnetotransport Study in the Superconductive Fluctuation Regime|Shintaro Adachi,Tomohiro Usui,Hironobu Kudo,Haruki Kushibiki,Kosuke Murata,Takao Watanabe,Kazutaka Kudo,Terukazu Nishizaki,Norio Kobayashi,Shojiro Kimura,Masaki Fujita,Kazuyoshi Yamada,Takashi Noji,Yoji Koike,Takenori Fujii###
(1028572, 1028581)
 To investigate the origin of the enhanced Tc (approx 110 K) of thetrilayer cuprate superconductor Bi2Sr2Ca2Cu3O10delta(Bi-2223), we have performed systematic magnetoresistance (MR) measurements onthis superconductor, as well as on the bilayer superconductor,Bi2Sr2CaCu2O8delta (Bi-2212).
Featurization terminated normally.
0,0,0,0,0,0,0,0.5263157894736842,0,0,0,0,0,0,0,0,0,0,0,0.10526315789473684,0,0,0,0,0,0,0,0,0.15789473684210525,0,0,0,0,0,0,0,0,0.10526315789473684,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.10526315789473684,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 110, 'K', 0]

Bi
###Unscaling Superconducting Parameters with $T_c$ for Bi-2212 and Bi-2223: A Magnetotransport Study in the Superconductive Fluctuation Regime|Shintaro Adachi,Tomohiro Usui,Hironobu Kudo,Haruki Kushibiki,Kosuke Murata,Takao Watanabe,Kazutaka Kudo,Terukazu Nishizaki,Norio Kobayashi,Shojiro Kimura,Masaki Fujita,Kazuyoshi Yamada,Takashi Noji,Yoji Koike,Takenori Fujii###
(1028586, 1028586)
 To investigate the origin of the enhanced Tc (approx 110 K) of thetrilayer cuprate superconductor Bi2Sr2Ca2Cu3O10delta(Bi-2223), we have performed systematic magnetoresistance (MR) measurements onthis superconductor, as well as on the bilayer superconductor,Bi2Sr2CaCu2O8delta (Bi-2212).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 110, 'K', 0]

Bi2Sr2CaCu2O8
###Unscaling Superconducting Parameters with $T_c$ for Bi-2212 and Bi-2223: A Magnetotransport Study in the Superconductive Fluctuation Regime|Shintaro Adachi,Tomohiro Usui,Hironobu Kudo,Haruki Kushibiki,Kosuke Murata,Takao Watanabe,Kazutaka Kudo,Terukazu Nishizaki,Norio Kobayashi,Shojiro Kimura,Masaki Fujita,Kazuyoshi Yamada,Takashi Noji,Yoji Koike,Takenori Fujii###
(1028633, 1028641)
 To investigate the origin of the enhanced Tc (approx 110 K) of thetrilayer cuprate superconductor Bi2Sr2Ca2Cu3O10delta(Bi-2223), we have performed systematic magnetoresistance (MR) measurements onthis superconductor, as well as on the bilayer superconductor,Bi2Sr2CaCu2O8delta (Bi-2212).
Featurization terminated normally.
0,0,0,0,0,0,0,0.5333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.06666666666666667,0,0,0,0,0,0,0,0,0.13333333333333333,0,0,0,0,0,0,0,0,0.13333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 110, 'K', 0]

Bi
###Unscaling Superconducting Parameters with $T_c$ for Bi-2212 and Bi-2223: A Magnetotransport Study in the Superconductive Fluctuation Regime|Shintaro Adachi,Tomohiro Usui,Hironobu Kudo,Haruki Kushibiki,Kosuke Murata,Takao Watanabe,Kazutaka Kudo,Terukazu Nishizaki,Norio Kobayashi,Shojiro Kimura,Masaki Fujita,Kazuyoshi Yamada,Takashi Noji,Yoji Koike,Takenori Fujii###
(1028645, 1028645)
 To investigate the origin of the enhanced Tc (approx 110 K) of thetrilayer cuprate superconductor Bi2Sr2Ca2Cu3O10delta(Bi-2223), we have performed systematic magnetoresistance (MR) measurements onthis superconductor, as well as on the bilayer superconductor,Bi2Sr2CaCu2O8delta (Bi-2212).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 110, 'K', 0]

C
###Unscaling Superconducting Parameters with $T_c$ for Bi-2212 and Bi-2223: A Magnetotransport Study in the Superconductive Fluctuation Regime|Shintaro Adachi,Tomohiro Usui,Hironobu Kudo,Haruki Kushibiki,Kosuke Murata,Takao Watanabe,Kazutaka Kudo,Terukazu Nishizaki,Norio Kobayashi,Shojiro Kimura,Masaki Fujita,Kazuyoshi Yamada,Takashi Noji,Yoji Koike,Takenori Fujii###
(1028679, 1028679)
 The in-plane coherencelength, xiab, and the specific-heat jump, DeltaC, have beenestimated using the theory of renormalized superconductive fluctuations, andthe doping dependence of these parameters has been qualitatively explainedusing the Fermi arc approach.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 110, 'K', 1]

CuO2
###Unscaling Superconducting Parameters with $T_c$ for Bi-2212 and Bi-2223: A Magnetotransport Study in the Superconductive Fluctuation Regime|Shintaro Adachi,Tomohiro Usui,Hironobu Kudo,Haruki Kushibiki,Kosuke Murata,Takao Watanabe,Kazutaka Kudo,Terukazu Nishizaki,Norio Kobayashi,Shojiro Kimura,Masaki Fujita,Kazuyoshi Yamada,Takashi Noji,Yoji Koike,Takenori Fujii###
(1028802, 1028804)
 A detailed comparison of the superconductingparameters with Tc for these compounds suggests that an additionalsuperconducting condensation energy exists, due to an increase in the number ofstacking CuO2 planes in a unit cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[244.0, 110, 'K', 2]

O
###Effects of a tilted magnetic field in a Dirac double layer|Sergey S. Pershoguba,D. S. L. Abergel,Victor M. Yakovenko,A. V. Balatsky###
(1029077, 1029077)
 The interlayer tunnelingconductance also exhibits an oscillatory dependence on the magnetic field tiltangle, known as the angular magnetoresistance oscillations (AMRO).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###Upper bound for the s-d exchange integral in n-(Ga,Mn)N:Si from magnetotransport studies|R. Adhikari,W. Stefanowicz,B. Faina,M. Sawicki,T. Dietl,A. Bonanni###
(1029141, 1029141)
Upper bound for the s-d exchange integral in n<missing VAR>-(Ga,Mn)NSi from magnetotransport studies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[202.0, 40, 'meV', 3],[212.0, 5, 'times', 3]

Mn
###Upper bound for the s-d exchange integral in n-(Ga,Mn)N:Si from magnetotransport studies|R. Adhikari,W. Stefanowicz,B. Faina,M. Sawicki,T. Dietl,A. Bonanni###
(1029143, 1029143)
Upper bound for the s-d exchange integral in n<missing VAR>-(Ga,Mn)NSi from magnetotransport studies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[200.0, 40, 'meV', 3],[210.0, 5, 'times', 3]

NSi
###Upper bound for the s-d exchange integral in n-(Ga,Mn)N:Si from magnetotransport studies|R. Adhikari,W. Stefanowicz,B. Faina,M. Sawicki,T. Dietl,A. Bonanni###
(1029145, 1029146)
Upper bound for the s-d exchange integral in n<missing VAR>-(Ga,Mn)NSi from magnetotransport studies.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[197.0, 40, 'meV', 3],[207.0, 5, 'times', 3]

N0
###Upper bound for the s-d exchange integral in n-(Ga,Mn)N:Si from magnetotransport studies|R. Adhikari,W. Stefanowicz,B. Faina,M. Sawicki,T. Dietl,A. Bonanni###
(1029188, 1029189)
 A series of recent magnetooptical studies pointed to contradicting values ofthe s-d exchange energy N0alpha in Mn-doped GaAs and GaN as well as inFe-doped GaN.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 40, 'meV', 2],[164.0, 5, 'times', 2]

Mn
###Upper bound for the s-d exchange integral in n-(Ga,Mn)N:Si from magnetotransport studies|R. Adhikari,W. Stefanowicz,B. Faina,M. Sawicki,T. Dietl,A. Bonanni###
(1029194, 1029194)
 A series of recent magnetooptical studies pointed to contradicting values ofthe s-d exchange energy N0alpha in Mn-doped GaAs and GaN as well as inFe-doped GaN.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 40, 'meV', 2],[159.0, 5, 'times', 2]

GaAs
###Upper bound for the s-d exchange integral in n-(Ga,Mn)N:Si from magnetotransport studies|R. Adhikari,W. Stefanowicz,B. Faina,M. Sawicki,T. Dietl,A. Bonanni###
(1029198, 1029199)
 A series of recent magnetooptical studies pointed to contradicting values ofthe s-d exchange energy N0alpha in Mn-doped GaAs and GaN as well as inFe-doped GaN.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 40, 'meV', 2],[154.0, 5, 'times', 2]

GaN
###Upper bound for the s-d exchange integral in n-(Ga,Mn)N:Si from magnetotransport studies|R. Adhikari,W. Stefanowicz,B. Faina,M. Sawicki,T. Dietl,A. Bonanni###
(1029203, 1029204)
 A series of recent magnetooptical studies pointed to contradicting values ofthe s-d exchange energy N0alpha in Mn-doped GaAs and GaN as well as inFe-doped GaN.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 40, 'meV', 2],[149.0, 5, 'times', 2]

Fe
###Upper bound for the s-d exchange integral in n-(Ga,Mn)N:Si from magnetotransport studies|R. Adhikari,W. Stefanowicz,B. Faina,M. Sawicki,T. Dietl,A. Bonanni###
(1029215, 1029215)
 A series of recent magnetooptical studies pointed to contradicting values ofthe s-d exchange energy N0alpha in Mn-doped GaAs and GaN as well as inFe-doped GaN.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 40, 'meV', 2],[138.0, 5, 'times', 2]

GaN
###Upper bound for the s-d exchange integral in n-(Ga,Mn)N:Si from magnetotransport studies|R. Adhikari,W. Stefanowicz,B. Faina,M. Sawicki,T. Dietl,A. Bonanni###
(1029219, 1029220)
 A series of recent magnetooptical studies pointed to contradicting values ofthe s-d exchange energy N0alpha in Mn-doped GaAs and GaN as well as inFe-doped GaN.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 40, 'meV', 2],[133.0, 5, 'times', 2]

N0
###Upper bound for the s-d exchange integral in n-(Ga,Mn)N:Si from magnetotransport studies|R. Adhikari,W. Stefanowicz,B. Faina,M. Sawicki,T. Dietl,A. Bonanni###
(1029282, 1029283)
 Here, a strong sensitivity of weak-localization phenomena tosymmetry breaking perturbations (such as spin-splitting and spin-disorderscattering) is exploited to evaluate the magnitude of N0alpha for n<missing VAR>-typewurtzite (Ga,Mn)NSi films grown by metalorganic vapor phase epitaxy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 40, 'meV', 1],[70.0, 5, 'times', 1]

Ga
###Upper bound for the s-d exchange integral in n-(Ga,Mn)N:Si from magnetotransport studies|R. Adhikari,W. Stefanowicz,B. Faina,M. Sawicki,T. Dietl,A. Bonanni###
(1029296, 1029296)
 Here, a strong sensitivity of weak-localization phenomena tosymmetry breaking perturbations (such as spin-splitting and spin-disorderscattering) is exploited to evaluate the magnitude of N0alpha for n<missing VAR>-typewurtzite (Ga,Mn)NSi films grown by metalorganic vapor phase epitaxy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 40, 'meV', 1],[57.0, 5, 'times', 1]

Mn
###Upper bound for the s-d exchange integral in n-(Ga,Mn)N:Si from magnetotransport studies|R. Adhikari,W. Stefanowicz,B. Faina,M. Sawicki,T. Dietl,A. Bonanni###
(1029298, 1029298)
 Here, a strong sensitivity of weak-localization phenomena tosymmetry breaking perturbations (such as spin-splitting and spin-disorderscattering) is exploited to evaluate the magnitude of N0alpha for n<missing VAR>-typewurtzite (Ga,Mn)NSi films grown by metalorganic vapor phase epitaxy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 40, 'meV', 1],[55.0, 5, 'times', 1]

NSi
###Upper bound for the s-d exchange integral in n-(Ga,Mn)N:Si from magnetotransport studies|R. Adhikari,W. Stefanowicz,B. Faina,M. Sawicki,T. Dietl,A. Bonanni###
(1029300, 1029301)
 Here, a strong sensitivity of weak-localization phenomena tosymmetry breaking perturbations (such as spin-splitting and spin-disorderscattering) is exploited to evaluate the magnitude of N0alpha for n<missing VAR>-typewurtzite (Ga,Mn)NSi films grown by metalorganic vapor phase epitaxy.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 40, 'meV', 1],[52.0, 5, 'times', 1]

N0
###Upper bound for the s-d exchange integral in n-(Ga,Mn)N:Si from magnetotransport studies|R. Adhikari,W. Stefanowicz,B. Faina,M. Sawicki,T. Dietl,A. Bonanni###
(1029338, 1029339)
Millikelvin magnetoresistance studies and their quantitative interpretationpoint to N0alpha < 40 meV, a value at least 5 times smaller than the onefound with similar measurements on, e.g.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 40, 'meV', 0],[14.0, 5, 'times', 0]

Zn
###Upper bound for the s-d exchange integral in n-(Ga,Mn)N:Si from magnetotransport studies|R. Adhikari,W. Stefanowicz,B. Faina,M. Sawicki,T. Dietl,A. Bonanni###
(1029384, 1029384)
, n<missing VAR>-(Zn,Mn)O.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 40, 'meV', 1],[31.0, 5, 'times', 1]

Mn
###Upper bound for the s-d exchange integral in n-(Ga,Mn)N:Si from magnetotransport studies|R. Adhikari,W. Stefanowicz,B. Faina,M. Sawicki,T. Dietl,A. Bonanni###
(1029386, 1029386)
, n<missing VAR>-(Zn,Mn)O.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 40, 'meV', 1],[33.0, 5, 'times', 1]

O
###Upper bound for the s-d exchange integral in n-(Ga,Mn)N:Si from magnetotransport studies|R. Adhikari,W. Stefanowicz,B. Faina,M. Sawicki,T. Dietl,A. Bonanni###
(1029388, 1029388)
, n<missing VAR>-(Zn,Mn)O.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 40, 'meV', 1],[35.0, 5, 'times', 1]

III
###Upper bound for the s-d exchange integral in n-(Ga,Mn)N:Si from magnetotransport studies|R. Adhikari,W. Stefanowicz,B. Faina,M. Sawicki,T. Dietl,A. Bonanni###
(1029428, 1029430)
 It is shown that thisstriking difference in the values of the s-d coupling between n<missing VAR>-type III-Vand II-VI dilute magnetic semiconductors can be explained by a theory thattakes into account the acceptor character of Mn in III-V compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 40, 'meV', 2],[75.0, 5, 'times', 2]

V
###Upper bound for the s-d exchange integral in n-(Ga,Mn)N:Si from magnetotransport studies|R. Adhikari,W. Stefanowicz,B. Faina,M. Sawicki,T. Dietl,A. Bonanni###
(1029432, 1029432)
 It is shown that thisstriking difference in the values of the s-d coupling between n<missing VAR>-type III-Vand II-VI dilute magnetic semiconductors can be explained by a theory thattakes into account the acceptor character of Mn in III-V compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 40, 'meV', 2],[79.0, 5, 'times', 2]

II
###Upper bound for the s-d exchange integral in n-(Ga,Mn)N:Si from magnetotransport studies|R. Adhikari,W. Stefanowicz,B. Faina,M. Sawicki,T. Dietl,A. Bonanni###
(1029437, 1029438)
 It is shown that thisstriking difference in the values of the s-d coupling between n<missing VAR>-type III-Vand II-VI dilute magnetic semiconductors can be explained by a theory thattakes into account the acceptor character of Mn in III-V compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 40, 'meV', 2],[84.0, 5, 'times', 2]

VI
###Upper bound for the s-d exchange integral in n-(Ga,Mn)N:Si from magnetotransport studies|R. Adhikari,W. Stefanowicz,B. Faina,M. Sawicki,T. Dietl,A. Bonanni###
(1029440, 1029441)
 It is shown that thisstriking difference in the values of the s-d coupling between n<missing VAR>-type III-Vand II-VI dilute magnetic semiconductors can be explained by a theory thattakes into account the acceptor character of Mn in III-V compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 40, 'meV', 2],[87.0, 5, 'times', 2]

Mn
###Upper bound for the s-d exchange integral in n-(Ga,Mn)N:Si from magnetotransport studies|R. Adhikari,W. Stefanowicz,B. Faina,M. Sawicki,T. Dietl,A. Bonanni###
(1029478, 1029478)
 It is shown that thisstriking difference in the values of the s-d coupling between n<missing VAR>-type III-Vand II-VI dilute magnetic semiconductors can be explained by a theory thattakes into account the acceptor character of Mn in III-V compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 40, 'meV', 2],[125.0, 5, 'times', 2]

III
###Upper bound for the s-d exchange integral in n-(Ga,Mn)N:Si from magnetotransport studies|R. Adhikari,W. Stefanowicz,B. Faina,M. Sawicki,T. Dietl,A. Bonanni###
(1029482, 1029484)
 It is shown that thisstriking difference in the values of the s-d coupling between n<missing VAR>-type III-Vand II-VI dilute magnetic semiconductors can be explained by a theory thattakes into account the acceptor character of Mn in III-V compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 40, 'meV', 2],[129.0, 5, 'times', 2]

V
###Upper bound for the s-d exchange integral in n-(Ga,Mn)N:Si from magnetotransport studies|R. Adhikari,W. Stefanowicz,B. Faina,M. Sawicki,T. Dietl,A. Bonanni###
(1029486, 1029486)
 It is shown that thisstriking difference in the values of the s-d coupling between n<missing VAR>-type III-Vand II-VI dilute magnetic semiconductors can be explained by a theory thattakes into account the acceptor character of Mn in III-V compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 40, 'meV', 2],[133.0, 5, 'times', 2]

B20
###Transport Theory of Metallic B20 Helimagnets|Jian Kang,Jiadong Zang###
(1029507, 1029508)
Transport Theory of Metallic B20 Helimagnets.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B20
###Transport Theory of Metallic B20 Helimagnets|Jian Kang,Jiadong Zang###
(1029513, 1029514)
 B20 compounds are a class of cubic helimagnets harboring nontrivial spintextures such as spin helices and skyrmions.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(SOC)
###Transport Theory of Metallic B20 Helimagnets|Jian Kang,Jiadong Zang###
(1029617, 1029621)
 It has been well understood thatthe Dzyaloshinskii-Moriya (DM) interaction is the origin of these textures, andthe physics behind the DM interaction is the spin-orbital coupling (SOC).
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SOC
###Transport Theory of Metallic B20 Helimagnets|Jian Kang,Jiadong Zang###
(1029629, 1029631)
However the SOC shows its effect not only on the spins, but also on theelectrons.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Transport Theory of Metallic B20 Helimagnets|Jian Kang,Jiadong Zang###
(1029662, 1029662)
 In this paper, we will discuss effects of the SOC on the electronand spin transports in B20 compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SOC
###Transport Theory of Metallic B20 Helimagnets|Jian Kang,Jiadong Zang###
(1029681, 1029683)
 In this paper, we will discuss effects of the SOC on the electronand spin transports in B20 compounds.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B20
###Transport Theory of Metallic B20 Helimagnets|Jian Kang,Jiadong Zang###
(1029700, 1029701)
 In this paper, we will discuss effects of the SOC on the electronand spin transports in B20 compounds.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BiTeI
###Transport Signatures of Fermi Surface Topology Change in BiTeI|Linda Ye,Joseph G. Checkelsky,Fumitaka Kagawa,Yoshinori Tokura###
(1029829, 1029831)
Transport Signatures of Fermi Surface Topology Change in BiTeI.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 0, ',', 3]

BiTeI
###Transport Signatures of Fermi Surface Topology Change in BiTeI|Linda Ye,Joseph G. Checkelsky,Fumitaka Kagawa,Yoshinori Tokura###
(1029869, 1029871)
 We report a quantum magnetotransport signature of a change in Fermi surfacetopology in the Rashba semiconductor BiTeI with systematic tuning of the Fermilevel E<missing VAR>F.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 0, ',', 2]

F
###Transport Signatures of Fermi Surface Topology Change in BiTeI|Linda Ye,Joseph G. Checkelsky,Fumitaka Kagawa,Yoshinori Tokura###
(1029889, 1029889)
 We report a quantum magnetotransport signature of a change in Fermi surfacetopology in the Rashba semiconductor BiTeI with systematic tuning of the Fermilevel E<missing VAR>F.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 0, ',', 2]

F
###Transport Signatures of Fermi Surface Topology Change in BiTeI|Linda Ye,Joseph G. Checkelsky,Fumitaka Kagawa,Yoshinori Tokura###
(1029923, 1029923)
 Beyond the quantum limit, we observe a marked increase/decrease inelectrical resistivity when E<missing VAR>F is above/below the Dirac node that we showoriginates from the Fermi surface topology.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 0, ',', 1]

S
###Geometric tuning of charge and spin correlations in manganite superlattices|K. Rogdakis,Z. Viskadourakis,A. P. Petrovic,E. Choi,J. Lee,C. Panagopoulos###
(1030200, 1030200)
 We report a modulation of the in-plane magnetotransport in artificialmanganite superlattice (SL) [(NdMnO3)n<missing VAR> /(SrMnO3)n<missing VAR> /(LaMnO3)n]m by varying thelayer thickness n<missing VAR> while keeping the total thickness of the structure constant.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(NdMnO3)
###Geometric tuning of charge and spin correlations in manganite superlattices|K. Rogdakis,Z. Viskadourakis,A. P. Petrovic,E. Choi,J. Lee,C. Panagopoulos###
(1030205, 1030210)
 We report a modulation of the in-plane magnetotransport in artificialmanganite superlattice (SL) [(NdMnO3)n<missing VAR> /(SrMnO3)n<missing VAR> /(LaMnO3)n]m by varying thelayer thickness n<missing VAR> while keeping the total thickness of the structure constant.
Featurization successful!
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(SrMnO3)
###Geometric tuning of charge and spin correlations in manganite superlattices|K. Rogdakis,Z. Viskadourakis,A. P. Petrovic,E. Choi,J. Lee,C. Panagopoulos###
(1030214, 1030219)
 We report a modulation of the in-plane magnetotransport in artificialmanganite superlattice (SL) [(NdMnO3)n<missing VAR> /(SrMnO3)n<missing VAR> /(LaMnO3)n]m by varying thelayer thickness n<missing VAR> while keeping the total thickness of the structure constant.
Featurization successful!
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(LaMnO3)
###Geometric tuning of charge and spin correlations in manganite superlattices|K. Rogdakis,Z. Viskadourakis,A. P. Petrovic,E. Choi,J. Lee,C. Panagopoulos###
(1030223, 1030228)
 We report a modulation of the in-plane magnetotransport in artificialmanganite superlattice (SL) [(NdMnO3)n<missing VAR> /(SrMnO3)n<missing VAR> /(LaMnO3)n]m by varying thelayer thickness n<missing VAR> while keeping the total thickness of the structure constant.
Featurization successful!
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Geometric tuning of charge and spin correlations in manganite superlattices|K. Rogdakis,Z. Viskadourakis,A. P. Petrovic,E. Choi,J. Lee,C. Panagopoulos###
(1030300, 1030300)
Charge transport in these heterostructures is confined to the interfaces andoccurs via variable range hopping (VR<missing VAR>H).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Geometric tuning of charge and spin correlations in manganite superlattices|K. Rogdakis,Z. Viskadourakis,A. P. Petrovic,E. Choi,J. Lee,C. Panagopoulos###
(1030302, 1030302)
Charge transport in these heterostructures is confined to the interfaces andoccurs via variable range hopping (VR<missing VAR>H).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Geometric tuning of charge and spin correlations in manganite superlattices|K. Rogdakis,Z. Viskadourakis,A. P. Petrovic,E. Choi,J. Lee,C. Panagopoulos###
(1030375, 1030375)
 Upon increasing n<missing VAR>, the interfacialseparation rises, leading to a suppression of the electrostatic screeningbetween carriers of neighboring interfaces and the opening of a Coulomb gap atthe Fermi level (E<missing VAR>F).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(H)
###Geometric tuning of charge and spin correlations in manganite superlattices|K. Rogdakis,Z. Viskadourakis,A. P. Petrovic,E. Choi,J. Lee,C. Panagopoulos###
(1030472, 1030474)
, an exchange field coupling between ferromagneticallyordered interfaces results in positive MR at low magnetic field (H).
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YI
###Anomalous Hall effect in YIG$|$Pt bilayers|Sibylle Meyer,Richard Schlitz,Stephan Geprägs,Matthias Opel,Hans Huebl,Rudolf Gross,Sebastian T. B. Goennenwein###
(1030536, 1030537)
Anomalous Hall effect in YIG<missing VAR>Pt bilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[225.0, 10, ',', 4],[233.0, 300, ',', 4]

Pt
###Anomalous Hall effect in YIG$|$Pt bilayers|Sibylle Meyer,Richard Schlitz,Stephan Geprägs,Matthias Opel,Hans Huebl,Rudolf Gross,Sebastian T. B. Goennenwein###
(1030539, 1030539)
Anomalous Hall effect in YIG<missing VAR>Pt bilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[223.0, 10, ',', 4],[231.0, 300, ',', 4]

YI
###Anomalous Hall effect in YIG$|$Pt bilayers|Sibylle Meyer,Richard Schlitz,Stephan Geprägs,Matthias Opel,Hans Huebl,Rudolf Gross,Sebastian T. B. Goennenwein###
(1030579, 1030580)
 We measure the ordinary and the anomalous Hall effect in a set of yttriumiron garnetplatinum (YIG<missing VAR>Pt) bilayers via magnetization orientationdependent magnetoresistance experiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[182.0, 10, ',', 3],[190.0, 300, ',', 3]

Pt
###Anomalous Hall effect in YIG$|$Pt bilayers|Sibylle Meyer,Richard Schlitz,Stephan Geprägs,Matthias Opel,Hans Huebl,Rudolf Gross,Sebastian T. B. Goennenwein###
(1030582, 1030582)
 We measure the ordinary and the anomalous Hall effect in a set of yttriumiron garnetplatinum (YIG<missing VAR>Pt) bilayers via magnetization orientationdependent magnetoresistance experiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[180.0, 10, ',', 3],[188.0, 300, ',', 3]

YI
###Anomalous Hall effect in YIG$|$Pt bilayers|Sibylle Meyer,Richard Schlitz,Stephan Geprägs,Matthias Opel,Hans Huebl,Rudolf Gross,Sebastian T. B. Goennenwein###
(1030622, 1030623)
 Our data show that the presence of theferrimagnetic insulator YIG<missing VAR> leads to an anomalous Hall like signature in Pt,sensitive to both Pt thickness and temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 10, ',', 2],[147.0, 300, ',', 2]

Pt
###Anomalous Hall effect in YIG$|$Pt bilayers|Sibylle Meyer,Richard Schlitz,Stephan Geprägs,Matthias Opel,Hans Huebl,Rudolf Gross,Sebastian T. B. Goennenwein###
(1030642, 1030642)
 Our data show that the presence of theferrimagnetic insulator YIG<missing VAR> leads to an anomalous Hall like signature in Pt,sensitive to both Pt thickness and temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 10, ',', 2],[128.0, 300, ',', 2]

Pt
###Anomalous Hall effect in YIG$|$Pt bilayers|Sibylle Meyer,Richard Schlitz,Stephan Geprägs,Matthias Opel,Hans Huebl,Rudolf Gross,Sebastian T. B. Goennenwein###
(1030652, 1030652)
 Our data show that the presence of theferrimagnetic insulator YIG<missing VAR> leads to an anomalous Hall like signature in Pt,sensitive to both Pt thickness and temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 10, ',', 2],[118.0, 300, ',', 2]

YI
###Anomalous Hall effect in YIG$|$Pt bilayers|Sibylle Meyer,Richard Schlitz,Stephan Geprägs,Matthias Opel,Hans Huebl,Rudolf Gross,Sebastian T. B. Goennenwein###
(1030728, 1030729)
 Interpretation of theexperimental findings in terms of the spin Hall anomalous Hall effect indicatesthat the imaginary part of the spin mixing interface conductanceGmathrmi plays a crucial role in YIG<missing VAR>Pt bilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 10, ',', 1],[41.0, 300, ',', 1]

Pt
###Anomalous Hall effect in YIG$|$Pt bilayers|Sibylle Meyer,Richard Schlitz,Stephan Geprägs,Matthias Opel,Hans Huebl,Rudolf Gross,Sebastian T. B. Goennenwein###
(1030731, 1030731)
 Interpretation of theexperimental findings in terms of the spin Hall anomalous Hall effect indicatesthat the imaginary part of the spin mixing interface conductanceGmathrmi plays a crucial role in YIG<missing VAR>Pt bilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 10, ',', 1],[39.0, 300, ',', 1]

In
###Anomalous Hall effect in YIG$|$Pt bilayers|Sibylle Meyer,Richard Schlitz,Stephan Geprägs,Matthias Opel,Hans Huebl,Rudolf Gross,Sebastian T. B. Goennenwein###
(1030736, 1030736)
 In particular, ourdata suggest a sign change in Gmathrmi between 10,mathrmK and300,mathrmK.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 10, ',', 0],[34.0, 300, ',', 0]

K
###Anomalous Hall effect in YIG$|$Pt bilayers|Sibylle Meyer,Richard Schlitz,Stephan Geprägs,Matthias Opel,Hans Huebl,Rudolf Gross,Sebastian T. B. Goennenwein###
(1030765, 1030765)
 In particular, ourdata suggest a sign change in Gmathrmi between 10,mathrmK and300,mathrmK.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 10, ',', 0],[5.0, 300, ',', 0]

K
###Anomalous Hall effect in YIG$|$Pt bilayers|Sibylle Meyer,Richard Schlitz,Stephan Geprägs,Matthias Opel,Hans Huebl,Rudolf Gross,Sebastian T. B. Goennenwein###
(1030773, 1030773)
 In particular, ourdata suggest a sign change in Gmathrmi between 10,mathrmK and300,mathrmK.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 10, ',', 0],[3.0, 300, ',', 0]

Pt
###Anomalous Hall effect in YIG$|$Pt bilayers|Sibylle Meyer,Richard Schlitz,Stephan Geprägs,Matthias Opel,Hans Huebl,Rudolf Gross,Sebastian T. B. Goennenwein###
(1030803, 1030803)
 Additionally, we report a higher order Hall effect, whichappears in thin Pt films on YIG<missing VAR> at low temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 10, ',', 1],[33.0, 300, ',', 1]

YI
###Anomalous Hall effect in YIG$|$Pt bilayers|Sibylle Meyer,Richard Schlitz,Stephan Geprägs,Matthias Opel,Hans Huebl,Rudolf Gross,Sebastian T. B. Goennenwein###
(1030809, 1030810)
 Additionally, we report a higher order Hall effect, whichappears in thin Pt films on YIG<missing VAR> at low temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 10, ',', 1],[39.0, 300, ',', 1]

Ta4Pd3Te16
###Multiband superconductivity in Ta$_4$Pd$_3$Te$_{16}$ with anisotropic gap structure|Wen-He Jiao,Yi Liu,Yu-Ke Li,Xiao-Feng Xu,Jin-Ke Bao,Chun-Mu Feng,Shi-Yan Li,Zhu-An Xu,Guang-Han Cao###
(1030834, 1030839)
Multiband superconductivity in Ta4Pd3Te16 with anisotropic gap structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13043478260869565,0,0,0,0,0,0.6956521739130435,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.17391304347826086,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 84.0, 'The', 2],[246.0, 0.12, 'up', 3]

Ta4Pd3Te16
###Multiband superconductivity in Ta$_4$Pd$_3$Te$_{16}$ with anisotropic gap structure|Wen-He Jiao,Yi Liu,Yu-Ke Li,Xiao-Feng Xu,Jin-Ke Bao,Chun-Mu Feng,Shi-Yan Li,Zhu-An Xu,Guang-Han Cao###
(1030895, 1030900)
 We carried out the measurements of magnetoresistance, magnetic susceptibilityand specific heat on crystals of the low-dimensional transition metal tellurideTa4Pd3Te16.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13043478260869565,0,0,0,0,0,0.6956521739130435,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.17391304347826086,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 84.0, 'The', 1],[185.0, 0.12, 'up', 2]

Ta4Pd3Te16
###Multiband superconductivity in Ta$_4$Pd$_3$Te$_{16}$ with anisotropic gap structure|Wen-He Jiao,Yi Liu,Yu-Ke Li,Xiao-Feng Xu,Jin-Ke Bao,Chun-Mu Feng,Shi-Yan Li,Zhu-An Xu,Guang-Han Cao###
(1030911, 1030916)
 Our results indicate that Ta4Pd3Te16 is ananisotropic type-II superconductor with the extracted Ginzburg-Landau parameterkappatextGL 84. The upper critical field Hc<missing VAR>2(T) shows a lineardependence at low temperature and the anisotropy of Hc<missing VAR>2(T) is stronglyT<missing VAR>-dependent, both of which indicate a multiband scenario.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13043478260869565,0,0,0,0,0,0.6956521739130435,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.17391304347826086,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 84.0, 'The', 0],[169.0, 0.12, 'up', 1]

II
###Multiband superconductivity in Ta$_4$Pd$_3$Te$_{16}$ with anisotropic gap structure|Wen-He Jiao,Yi Liu,Yu-Ke Li,Xiao-Feng Xu,Jin-Ke Bao,Chun-Mu Feng,Shi-Yan Li,Zhu-An Xu,Guang-Han Cao###
(1030927, 1030928)
 Our results indicate that Ta4Pd3Te16 is ananisotropic type-II superconductor with the extracted Ginzburg-Landau parameterkappatextGL 84. The upper critical field Hc<missing VAR>2(T) shows a lineardependence at low temperature and the anisotropy of Hc<missing VAR>2(T) is stronglyT<missing VAR>-dependent, both of which indicate a multiband scenario.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 84.0, 'The', 0],[157.0, 0.12, 'up', 1]

H
###Multiband superconductivity in Ta$_4$Pd$_3$Te$_{16}$ with anisotropic gap structure|Wen-He Jiao,Yi Liu,Yu-Ke Li,Xiao-Feng Xu,Jin-Ke Bao,Chun-Mu Feng,Shi-Yan Li,Zhu-An Xu,Guang-Han Cao###
(1030957, 1030957)
 Our results indicate that Ta4Pd3Te16 is ananisotropic type-II superconductor with the extracted Ginzburg-Landau parameterkappatextGL 84. The upper critical field Hc<missing VAR>2(T) shows a lineardependence at low temperature and the anisotropy of Hc<missing VAR>2(T) is stronglyT<missing VAR>-dependent, both of which indicate a multiband scenario.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 84.0, 'The', 0],[128.0, 0.12, 'up', 1]

H
###Multiband superconductivity in Ta$_4$Pd$_3$Te$_{16}$ with anisotropic gap structure|Wen-He Jiao,Yi Liu,Yu-Ke Li,Xiao-Feng Xu,Jin-Ke Bao,Chun-Mu Feng,Shi-Yan Li,Zhu-An Xu,Guang-Han Cao###
(1030987, 1030987)
 Our results indicate that Ta4Pd3Te16 is ananisotropic type-II superconductor with the extracted Ginzburg-Landau parameterkappatextGL 84. The upper critical field Hc<missing VAR>2(T) shows a lineardependence at low temperature and the anisotropy of Hc<missing VAR>2(T) is stronglyT<missing VAR>-dependent, both of which indicate a multiband scenario.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 84.0, 'The', 0],[98.0, 0.12, 'up', 1]

C
###Multiband superconductivity in Ta$_4$Pd$_3$Te$_{16}$ with anisotropic gap structure|Wen-He Jiao,Yi Liu,Yu-Ke Li,Xiao-Feng Xu,Jin-Ke Bao,Chun-Mu Feng,Shi-Yan Li,Zhu-An Xu,Guang-Han Cao###
(1031038, 1031038)
 A detailed analysisreveals that the electronic specific heat Ctextel(T) can beconsistently described by a two-gap (sd waves) model from the basetemperature T/Tcsim 0.12 up to Tc.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 84.0, 'The', 1],[47.0, 0.12, 'up', 0]

Ta4Pd3Te16
###Multiband superconductivity in Ta$_4$Pd$_3$Te$_{16}$ with anisotropic gap structure|Wen-He Jiao,Yi Liu,Yu-Ke Li,Xiao-Feng Xu,Jin-Ke Bao,Chun-Mu Feng,Shi-Yan Li,Zhu-An Xu,Guang-Han Cao###
(1031106, 1031111)
 Our data suggests multibandsuperconductivity in Ta4Pd3Te16 with anisotropic gap structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13043478260869565,0,0,0,0,0,0.6956521739130435,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.17391304347826086,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 84.0, 'The', 2],[21.0, 0.12, 'up', 1]

P
###Transport and magnetotransport in 3D Weyl Semimetals|Navneeth Ramakrishnan,Mirco Milletari,Shaffique Adam###
(1031177, 1031177)
 Using the R<missing VAR>PA-Boltzmann transport scatteringtheory for electrons scattering off randomly distributed charged impurities,together with an effective medium theory to average over the resultingspatially inhomogeneous carrier density, we smoothly connect our results forthe minimum conductivity near the Weyl point with known results for theconductivity at high carrier density.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 3, 'D', 2],[216.0, 10, 'for', 1]

In
###Transport and magnetotransport in 3D Weyl Semimetals|Navneeth Ramakrishnan,Mirco Milletari,Shaffique Adam###
(1031288, 1031288)
 In the presence of a non-quantizingmagnetic field, we predict that for both high and low carrier densities, Weylsemimetals show a transition from quadratic magnetoresistance (MR) at lowmagnetic fields to linear MR at high magnetic fields, and that the magnitude ofthe MR > 10 for realistic parameters.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 3, 'D', 3],[105.0, 10, 'for', 0]

TlBiSSe
###Transport and magnetotransport in 3D Weyl Semimetals|Navneeth Ramakrishnan,Mirco Milletari,Shaffique Adam###
(1031434, 1031437)
 Our results are in quantitative agreementwith recent unexpected experimental observations on the mixed-chalcogenidecompound TlBiSSe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[297.0, 3, 'D', 4],[41.0, 10, 'for', 1]

C
###Localization of charge carriers in monolayer graphene gradually disordered by ion irradiation|E. Zion,A. Haran,A. V. Butenko,L. Wolfson,Yu. Kaganovskii,T. Havdala,A. Sharoni,D. Naveh,V. Richter,M. Kaveh,E. Kogan,I. Shlimak###
(1031535, 1031535)
 Gradual localization of charge carriers was studied in a series of micro-sizesamples of monolayer graphene fabricated on the common large scale film andirradiated by different doses of C ions with energy 35 keV.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 35, 'keV', 0],[37.0, 4, 'T', 1]

V
###Localization of charge carriers in monolayer graphene gradually disordered by ion irradiation|E. Zion,A. Haran,A. V. Butenko,L. Wolfson,Yu. Kaganovskii,T. Havdala,A. Sharoni,D. Naveh,V. Richter,M. Kaveh,E. Kogan,I. Shlimak###
(1031649, 1031649)
 Further increase of disorder leads to stronglocalization regime, when conductivity is described by thevariable-range-hopping (VR<missing VAR>H) mechanism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 35, 'keV', 2],[77.0, 4, 'T', 1]

H
###Localization of charge carriers in monolayer graphene gradually disordered by ion irradiation|E. Zion,A. Haran,A. V. Butenko,L. Wolfson,Yu. Kaganovskii,T. Havdala,A. Sharoni,D. Naveh,V. Richter,M. Kaveh,E. Kogan,I. Shlimak###
(1031651, 1031651)
 Further increase of disorder leads to stronglocalization regime, when conductivity is described by thevariable-range-hopping (VR<missing VAR>H) mechanism.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 35, 'keV', 2],[79.0, 4, 'T', 1]

V
###Localization of charge carriers in monolayer graphene gradually disordered by ion irradiation|E. Zion,A. Haran,A. V. Butenko,L. Wolfson,Yu. Kaganovskii,T. Havdala,A. Sharoni,D. Naveh,V. Richter,M. Kaveh,E. Kogan,I. Shlimak###
(1031682, 1031682)
 A crossover from the Mott regime to theEfros-Shklovskii regime of VR<missing VAR>H is observed with decreasing temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 35, 'keV', 3],[110.0, 4, 'T', 2]

H
###Localization of charge carriers in monolayer graphene gradually disordered by ion irradiation|E. Zion,A. Haran,A. V. Butenko,L. Wolfson,Yu. Kaganovskii,T. Havdala,A. Sharoni,D. Naveh,V. Richter,M. Kaveh,E. Kogan,I. Shlimak###
(1031684, 1031684)
 A crossover from the Mott regime to theEfros-Shklovskii regime of VR<missing VAR>H is observed with decreasing temperature.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 35, 'keV', 3],[112.0, 4, 'T', 2]

WTe2
###Raman fingerprint of semi-metal WTe2 from bulk to monolayer|Yucheng Jiang,Ju Gao,Lin Wang###
(1031748, 1031750)
Raman fingerprint of semi-metal WTe2 from bulk to monolayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 6, 'Raman', 3],[122.0, 4, ',', 3],[127.0, 9, ',', 3],[132.0, 8, ',', 3],[137.0, 6, ',', 3],[157.0, 33, 'Raman', 3],[270.0, -1, ',', 6]

(WTe2)
###Raman fingerprint of semi-metal WTe2 from bulk to monolayer|Yucheng Jiang,Ju Gao,Lin Wang###
(1031765, 1031769)
 Tungsten ditelluride (WTe2), a layered transition-metal dichalcogenide (TMD),has recently demonstrated an extremely large magnetoresistance effect, which isunique among TMDs.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 6, 'Raman', 2],[103.0, 4, ',', 2],[108.0, 9, ',', 2],[113.0, 8, ',', 2],[118.0, 6, ',', 2],[138.0, 33, 'Raman', 2],[251.0, -1, ',', 5]

Ds
###Raman fingerprint of semi-metal WTe2 from bulk to monolayer|Yucheng Jiang,Ju Gao,Lin Wang###
(1031818, 1031818)
 Tungsten ditelluride (WTe2), a layered transition-metal dichalcogenide (TMD),has recently demonstrated an extremely large magnetoresistance effect, which isunique among TMDs.
EXCEPTION 3: IndexError for Ds
WTe2
[41.0, 6, 'Raman', 2],[54.0, 4, ',', 2],[59.0, 9, ',', 2],[64.0, 8, ',', 2],[69.0, 6, ',', 2],[89.0, 33, 'Raman', 2],[202.0, -1, ',', 5]

P
###Superpoissonian shot noise in organic magnetic tunnel junctions|Juan Pedro Cascales,Jhen-Yong Hong,Isidoro Martinez,Minn-Tsong Lin,Tomasz Szczepanski,Vitalii K. Dugaev,Jozef Barnas,Farkad G. Aliev###
(1032242, 1032242)
 Here we investigate conductance and shotnoise in magnetic tunnel junctions with PTCDA barriers a few nm thick.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 10, 'and', 1],[43.0, 40, '%', 1]

P
###Superpoissonian shot noise in organic magnetic tunnel junctions|Juan Pedro Cascales,Jhen-Yong Hong,Isidoro Martinez,Minn-Tsong Lin,Tomasz Szczepanski,Vitalii K. Dugaev,Jozef Barnas,Farkad G. Aliev###
(1032412, 1032412)
 We explain our main findings in terms of a model which includestunneling through a two level (or multilevel) system, originated frominterfacial bonds of the PTCDA molecules.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 10, 'and', 2],[127.0, 40, '%', 2]

C
###Naive model from 1970th applied to CMR manganites: it seems to work|A. Vl. Andrianov###
(1032485, 1032485)
Naive model from 1970th applied to CMR manganites it seems to work.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 1970, 'th', 0],[51.0, 1970, 'th', 1]

C
###Naive model from 1970th applied to CMR manganites: it seems to work|A. Vl. Andrianov###
(1032678, 1032678)
 The field--caused shifts of the conducting bands results in thechange in the number of thermally activated carriers, and this change ispresumed to be responsible for the resistivity dependences on temperature andmagnetic field and for the CMR itself.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[199.0, 1970, 'th', 3],[142.0, 1970, 'th', 2]

C
###Naive model from 1970th applied to CMR manganites: it seems to work|A. Vl. Andrianov###
(1032716, 1032716)
 Employing this model we calculate thishypothetical Weiss field from the experimental data for various CMR manganitesemploying minimal set of the adjustable parameters, namely two.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[237.0, 1970, 'th', 4],[180.0, 1970, 'th', 3]

LuPtSb
###Transition from semiconducting to metallic-like conducting and weak antilocalization effect in single crystals of LuPtSb|Zhipeng Hou,Yue Wang,Guizhou Xu,Xiaoming Zhang,Enke Liu,Wenquan Wang,Zhongyuan Liu,Xuekui Xi,Wenhong Wang,Guangheng Wu###
(1032830, 1032832)
Transition from semiconducting to metallic-like conducting and weak antilocalization effect in single crystals of LuPtSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 150, 'K', 2],[142.0, 2950, 'cm', 3],[159.0, 150, 'K', 3],[201.0, 150, 'K', 4]

LuPtSb
###Transition from semiconducting to metallic-like conducting and weak antilocalization effect in single crystals of LuPtSb|Zhipeng Hou,Yue Wang,Guizhou Xu,Xiaoming Zhang,Enke Liu,Wenquan Wang,Zhongyuan Liu,Xuekui Xi,Wenhong Wang,Guangheng Wu###
(1032849, 1032851)
 High quality half-Heusler single crystals of LuPtSb have been synthesized bya Pb flux method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 150, 'K', 1],[123.0, 2950, 'cm', 2],[140.0, 150, 'K', 2],[182.0, 150, 'K', 3]

Pb
###Transition from semiconducting to metallic-like conducting and weak antilocalization effect in single crystals of LuPtSb|Zhipeng Hou,Yue Wang,Guizhou Xu,Xiaoming Zhang,Enke Liu,Wenquan Wang,Zhongyuan Liu,Xuekui Xi,Wenhong Wang,Guangheng Wu###
(1032864, 1032864)
 High quality half-Heusler single crystals of LuPtSb have been synthesized bya Pb flux method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 150, 'K', 1],[110.0, 2950, 'cm', 2],[127.0, 150, 'K', 2],[169.0, 150, 'K', 3]

LuPtSb
###Transition from semiconducting to metallic-like conducting and weak antilocalization effect in single crystals of LuPtSb|Zhipeng Hou,Yue Wang,Guizhou Xu,Xiaoming Zhang,Enke Liu,Wenquan Wang,Zhongyuan Liu,Xuekui Xi,Wenhong Wang,Guangheng Wu###
(1032892, 1032894)
 The temperature dependent resistivity and Hall effectsindicate that the LuPtSb crystal is a p<missing VAR>-type gapless semiconductor showing atransition from semiconducting to metallic conducting at 150 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 150, 'K', 0],[80.0, 2950, 'cm', 1],[97.0, 150, 'K', 1],[139.0, 150, 'K', 2]

W
###Transition from semiconducting to metallic-like conducting and weak antilocalization effect in single crystals of LuPtSb|Zhipeng Hou,Yue Wang,Guizhou Xu,Xiaoming Zhang,Enke Liu,Wenquan Wang,Zhongyuan Liu,Xuekui Xi,Wenhong Wang,Guangheng Wu###
(1033017, 1033017)
 The low-field MR data shows evidence for weakantilocalization (WAL) effect at temperatures even up to 150 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 150, 'K', 2],[43.0, 2950, 'cm', 1],[26.0, 150, 'K', 1],[16.0, 150, 'K', 0]

W
###Transition from semiconducting to metallic-like conducting and weak antilocalization effect in single crystals of LuPtSb|Zhipeng Hou,Yue Wang,Guizhou Xu,Xiaoming Zhang,Enke Liu,Wenquan Wang,Zhongyuan Liu,Xuekui Xi,Wenhong Wang,Guangheng Wu###
(1033059, 1033059)
 Analysis of thetemperature and angle dependent magnetoconductance manifests that the WAL<missing VAR>effect originates from the bulk contribution owing to the strong spin-orbitalcoupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 150, 'K', 3],[85.0, 2950, 'cm', 2],[68.0, 150, 'K', 2],[26.0, 150, 'K', 1]

(Tc)
###Pressure-driven dome-shaped superconductivity and electronic structural evolution in tungsten ditelluride|Xing-Chen Pan,Xuliang Chen,Huimei Liu,Yanqing Feng,Zhongxia Wei,Yonghui Zhou,Zhenhua Chi,Li Pi,Fei Yen,Fengqi Song,Xiangang Wan,Zhaorong Yang,Baigeng Wang,Guanghou Wang,Yuheng Zhang###
(1033257, 1033259)
 Superconductivity sharply appears ata pressure of 2.5 GPa, rapidly reaching a maximum critical temperature (Tc) of7 K at around 16.8 GPa, followed by a monotonic decrease in Tc with increasingpressure, thereby exhibiting the typical dome-shaped superconducting phase.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 60, 'Tesla', 2],[68.0, 5, 'd', 1],[15.0, 2.5, 'GPa', 0],[12.0, 16.8, 'GPa', 0]

K
###Pressure-driven dome-shaped superconductivity and electronic structural evolution in tungsten ditelluride|Xing-Chen Pan,Xuliang Chen,Huimei Liu,Yanqing Feng,Zhongxia Wei,Yonghui Zhou,Zhenhua Chi,Li Pi,Fei Yen,Fengqi Song,Xiangang Wan,Zhaorong Yang,Baigeng Wang,Guanghou Wang,Yuheng Zhang###
(1033266, 1033266)
 Superconductivity sharply appears ata pressure of 2.5 GPa, rapidly reaching a maximum critical temperature (Tc) of7 K at around 16.8 GPa, followed by a monotonic decrease in Tc with increasingpressure, thereby exhibiting the typical dome-shaped superconducting phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 60, 'Tesla', 2],[77.0, 5, 'd', 1],[24.0, 2.5, 'GPa', 0],[5.0, 16.8, 'GPa', 0]

Tc
###Pressure-driven dome-shaped superconductivity and electronic structural evolution in tungsten ditelluride|Xing-Chen Pan,Xuliang Chen,Huimei Liu,Yanqing Feng,Zhongxia Wei,Yonghui Zhou,Zhenhua Chi,Li Pi,Fei Yen,Fengqi Song,Xiangang Wan,Zhaorong Yang,Baigeng Wang,Guanghou Wang,Yuheng Zhang###
(1033286, 1033286)
 Superconductivity sharply appears ata pressure of 2.5 GPa, rapidly reaching a maximum critical temperature (Tc) of7 K at around 16.8 GPa, followed by a monotonic decrease in Tc with increasingpressure, thereby exhibiting the typical dome-shaped superconducting phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 60, 'Tesla', 2],[97.0, 5, 'd', 1],[44.0, 2.5, 'GPa', 0],[15.0, 16.8, 'GPa', 0]

Tc
###Pressure-driven dome-shaped superconductivity and electronic structural evolution in tungsten ditelluride|Xing-Chen Pan,Xuliang Chen,Huimei Liu,Yanqing Feng,Zhongxia Wei,Yonghui Zhou,Zhenhua Chi,Li Pi,Fei Yen,Fengqi Song,Xiangang Wan,Zhaorong Yang,Baigeng Wang,Guanghou Wang,Yuheng Zhang###
(1033381, 1033381)
From theoretical calculations, we interpret the low-pressure region of thesuperconducting dome to an enrichment of the density of states at the Fermilevel and attribute the high-pressure decrease in Tc to possible structuralinstability.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[218.0, 60, 'Tesla', 3],[192.0, 5, 'd', 2],[139.0, 2.5, 'GPa', 1],[110.0, 16.8, 'GPa', 1]

Y
###Resonant magneto-tunneling between normal and ferromagnetic electrodes in relation to the three-terminal spin transport|Z. Yue,M. E. Raikh###
(1033483, 1033483)
 The recently suggested mechanism [Y.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 113, ',', 5]

H
###Resonant magneto-tunneling between normal and ferromagnetic electrodes in relation to the three-terminal spin transport|Z. Yue,M. E. Raikh###
(1033490, 1033490)
 Song and H.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 113, ',', 4]

Y(Lu)PtBi
###Large linear magnetoresistance and weak anti-localization in Y(Lu)PtBi topological insulators|Chandra Shekhar,Erik Kampert,Tobias Foerster,Binghai Yan,Ajaya K. Nayak,Michael Nicklas,Claudia Felser###
(1033816, 1033821)
Large linear magnetoresistance and weak anti-localization in Y(Lu)PtBi topological insulators.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 6, 'x', 4],[175.0, 8, 'x', 4],[190.0, 2, 'K', 4],[247.0, 50, 'K', 6],[292.0, 2000, '%', 7],[296.0, 10, 'K', 7]

Y(Lu)PtBi
###Large linear magnetoresistance and weak anti-localization in Y(Lu)PtBi topological insulators|Chandra Shekhar,Erik Kampert,Tobias Foerster,Binghai Yan,Ajaya K. Nayak,Michael Nicklas,Claudia Felser###
(1033915, 1033920)
 Here we present themagneto-transport properties of our high quality single crystalline Y(Lu)PtBiHeusler topological insulators, which belong to a group of noncentrosymmetricsuperconductor with Tc  08 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 6, 'x', 1],[76.0, 8, 'x', 1],[91.0, 2, 'K', 1],[148.0, 50, 'K', 3],[193.0, 2000, '%', 4],[197.0, 10, 'K', 4]

Tc
###Large linear magnetoresistance and weak anti-localization in Y(Lu)PtBi topological insulators|Chandra Shekhar,Erik Kampert,Tobias Foerster,Binghai Yan,Ajaya K. Nayak,Michael Nicklas,Claudia Felser###
(1033949, 1033949)
 Here we present themagneto-transport properties of our high quality single crystalline Y(Lu)PtBiHeusler topological insulators, which belong to a group of noncentrosymmetricsuperconductor with Tc  08 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 6, 'x', 1],[47.0, 8, 'x', 1],[62.0, 2, 'K', 1],[119.0, 50, 'K', 3],[164.0, 2000, '%', 4],[168.0, 10, 'K', 4]

K
###Large linear magnetoresistance and weak anti-localization in Y(Lu)PtBi topological insulators|Chandra Shekhar,Erik Kampert,Tobias Foerster,Binghai Yan,Ajaya K. Nayak,Michael Nicklas,Claudia Felser###
(1033955, 1033955)
 Here we present themagneto-transport properties of our high quality single crystalline Y(Lu)PtBiHeusler topological insulators, which belong to a group of noncentrosymmetricsuperconductor with Tc  08 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 6, 'x', 1],[41.0, 8, 'x', 1],[56.0, 2, 'K', 1],[113.0, 50, 'K', 3],[158.0, 2000, '%', 4],[162.0, 10, 'K', 4]

YPtBi
###Large linear magnetoresistance and weak anti-localization in Y(Lu)PtBi topological insulators|Chandra Shekhar,Erik Kampert,Tobias Foerster,Binghai Yan,Ajaya K. Nayak,Michael Nicklas,Claudia Felser###
(1033991, 1033993)
 Both the compounds show semi-metallic behaviorwith low charge carrier of 6 x1018 cm-3 for YPtBi and 8 x1019 cm-3 for LuPtBiat 2 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 6, 'x', 0],[3.0, 8, 'x', 0],[18.0, 2, 'K', 0],[75.0, 50, 'K', 2],[120.0, 2000, '%', 3],[124.0, 10, 'K', 3]

LuPtBi
###Large linear magnetoresistance and weak anti-localization in Y(Lu)PtBi topological insulators|Chandra Shekhar,Erik Kampert,Tobias Foerster,Binghai Yan,Ajaya K. Nayak,Michael Nicklas,Claudia Felser###
(1034005, 1034007)
 Both the compounds show semi-metallic behaviorwith low charge carrier of 6 x1018 cm-3 for YPtBi and 8 x1019 cm-3 for LuPtBiat 2 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 6, 'x', 0],[9.0, 8, 'x', 0],[4.0, 2, 'K', 0],[61.0, 50, 'K', 2],[106.0, 2000, '%', 3],[110.0, 10, 'K', 3]

GdSi
###Possible magnetic-polaron-switched positive and negative magnetoresistance in the GdSi single crystal|Hai-Feng Li,Yinguo Xiao,Berthold Schmitz,Jörg Persson,Wolfgang Schmidt,Paul Meuffels,Georg Roth,Thomas Brückel###
(1034163, 1034164)
Possible magnetic-polaron-switched positive and negative magnetoresistance in the GdSi single crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 415, '%', 3],[180.0, -10.5, '%', 4]

F
###Possible magnetic-polaron-switched positive and negative magnetoresistance in the GdSi single crystal|Hai-Feng Li,Yinguo Xiao,Berthold Schmitz,Jörg Persson,Wolfgang Schmidt,Paul Meuffels,Georg Roth,Thomas Brückel###
(1034251, 1034251)
 Here weshow that antiferromagnetic (AFM) GdSi metal displays an anisotropic positiveMR value (PMRV), up to sim 415%, accompanied by a large negative thermalvolume expansion (NTVE).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 415, '%', 0],[93.0, -10.5, '%', 1]

GdSi
###Possible magnetic-polaron-switched positive and negative magnetoresistance in the GdSi single crystal|Hai-Feng Li,Yinguo Xiao,Berthold Schmitz,Jörg Persson,Wolfgang Schmidt,Paul Meuffels,Georg Roth,Thomas Brückel###
(1034255, 1034256)
 Here weshow that antiferromagnetic (AFM) GdSi metal displays an anisotropic positiveMR value (PMRV), up to sim 415%, accompanied by a large negative thermalvolume expansion (NTVE).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 415, '%', 0],[88.0, -10.5, '%', 1]

P
###Possible magnetic-polaron-switched positive and negative magnetoresistance in the GdSi single crystal|Hai-Feng Li,Yinguo Xiao,Berthold Schmitz,Jörg Persson,Wolfgang Schmidt,Paul Meuffels,Georg Roth,Thomas Brückel###
(1034275, 1034275)
 Here weshow that antiferromagnetic (AFM) GdSi metal displays an anisotropic positiveMR value (PMRV), up to sim 415%, accompanied by a large negative thermalvolume expansion (NTVE).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 415, '%', 0],[69.0, -10.5, '%', 1]

V
###Possible magnetic-polaron-switched positive and negative magnetoresistance in the GdSi single crystal|Hai-Feng Li,Yinguo Xiao,Berthold Schmitz,Jörg Persson,Wolfgang Schmidt,Paul Meuffels,Georg Roth,Thomas Brückel###
(1034278, 1034278)
 Here weshow that antiferromagnetic (AFM) GdSi metal displays an anisotropic positiveMR value (PMRV), up to sim 415%, accompanied by a large negative thermalvolume expansion (NTVE).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 415, '%', 0],[66.0, -10.5, '%', 1]

N
###Possible magnetic-polaron-switched positive and negative magnetoresistance in the GdSi single crystal|Hai-Feng Li,Yinguo Xiao,Berthold Schmitz,Jörg Persson,Wolfgang Schmidt,Paul Meuffels,Georg Roth,Thomas Brückel###
(1034310, 1034310)
 Here weshow that antiferromagnetic (AFM) GdSi metal displays an anisotropic positiveMR value (PMRV), up to sim 415%, accompanied by a large negative thermalvolume expansion (NTVE).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 415, '%', 0],[34.0, -10.5, '%', 1]

N
###Possible magnetic-polaron-switched positive and negative magnetoresistance in the GdSi single crystal|Hai-Feng Li,Yinguo Xiao,Berthold Schmitz,Jörg Persson,Wolfgang Schmidt,Paul Meuffels,Georg Roth,Thomas Brückel###
(1034321, 1034321)
 Around T<missing VAR>textN the PMRV translates to negative,down to sim -10.5%.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 415, '%', 1],[23.0, -10.5, '%', 0]

P
###Possible magnetic-polaron-switched positive and negative magnetoresistance in the GdSi single crystal|Hai-Feng Li,Yinguo Xiao,Berthold Schmitz,Jörg Persson,Wolfgang Schmidt,Paul Meuffels,Georg Roth,Thomas Brückel###
(1034325, 1034325)
 Around T<missing VAR>textN the PMRV translates to negative,down to sim -10.5%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 415, '%', 1],[19.0, -10.5, '%', 0]

V
###Possible magnetic-polaron-switched positive and negative magnetoresistance in the GdSi single crystal|Hai-Feng Li,Yinguo Xiao,Berthold Schmitz,Jörg Persson,Wolfgang Schmidt,Paul Meuffels,Georg Roth,Thomas Brückel###
(1034328, 1034328)
 Around T<missing VAR>textN the PMRV translates to negative,down to sim -10.5%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 415, '%', 1],[16.0, -10.5, '%', 0]

P
###Possible magnetic-polaron-switched positive and negative magnetoresistance in the GdSi single crystal|Hai-Feng Li,Yinguo Xiao,Berthold Schmitz,Jörg Persson,Wolfgang Schmidt,Paul Meuffels,Georg Roth,Thomas Brückel###
(1034362, 1034362)
 Their theory-breaking magnetic-field dependencies [PMRVdominantly linear; negative MR value (NMRV) quadratic] and the unusual NTVEindicate that PMRV is induced by the formation of magnetic polarons in 5d<missing VAR>bands, whereas NMRV is possibly due to abated electron-spin scatteringresulting from magnetic-field-aligned local 4f<missing VAR> spins.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 415, '%', 2],[18.0, -10.5, '%', 1]

V
###Possible magnetic-polaron-switched positive and negative magnetoresistance in the GdSi single crystal|Hai-Feng Li,Yinguo Xiao,Berthold Schmitz,Jörg Persson,Wolfgang Schmidt,Paul Meuffels,Georg Roth,Thomas Brückel###
(1034365, 1034365)
 Their theory-breaking magnetic-field dependencies [PMRVdominantly linear; negative MR value (NMRV) quadratic] and the unusual NTVEindicate that PMRV is induced by the formation of magnetic polarons in 5d<missing VAR>bands, whereas NMRV is possibly due to abated electron-spin scatteringresulting from magnetic-field-aligned local 4f<missing VAR> spins.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 415, '%', 2],[21.0, -10.5, '%', 1]

N
###Possible magnetic-polaron-switched positive and negative magnetoresistance in the GdSi single crystal|Hai-Feng Li,Yinguo Xiao,Berthold Schmitz,Jörg Persson,Wolfgang Schmidt,Paul Meuffels,Georg Roth,Thomas Brückel###
(1034381, 1034381)
 Their theory-breaking magnetic-field dependencies [PMRVdominantly linear; negative MR value (NMRV) quadratic] and the unusual NTVEindicate that PMRV is induced by the formation of magnetic polarons in 5d<missing VAR>bands, whereas NMRV is possibly due to abated electron-spin scatteringresulting from magnetic-field-aligned local 4f<missing VAR> spins.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 415, '%', 2],[37.0, -10.5, '%', 1]

V
###Possible magnetic-polaron-switched positive and negative magnetoresistance in the GdSi single crystal|Hai-Feng Li,Yinguo Xiao,Berthold Schmitz,Jörg Persson,Wolfgang Schmidt,Paul Meuffels,Georg Roth,Thomas Brückel###
(1034384, 1034384)
 Their theory-breaking magnetic-field dependencies [PMRVdominantly linear; negative MR value (NMRV) quadratic] and the unusual NTVEindicate that PMRV is induced by the formation of magnetic polarons in 5d<missing VAR>bands, whereas NMRV is possibly due to abated electron-spin scatteringresulting from magnetic-field-aligned local 4f<missing VAR> spins.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 415, '%', 2],[40.0, -10.5, '%', 1]

N
###Possible magnetic-polaron-switched positive and negative magnetoresistance in the GdSi single crystal|Hai-Feng Li,Yinguo Xiao,Berthold Schmitz,Jörg Persson,Wolfgang Schmidt,Paul Meuffels,Georg Roth,Thomas Brückel###
(1034396, 1034396)
 Their theory-breaking magnetic-field dependencies [PMRVdominantly linear; negative MR value (NMRV) quadratic] and the unusual NTVEindicate that PMRV is induced by the formation of magnetic polarons in 5d<missing VAR>bands, whereas NMRV is possibly due to abated electron-spin scatteringresulting from magnetic-field-aligned local 4f<missing VAR> spins.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 415, '%', 2],[52.0, -10.5, '%', 1]

P
###Possible magnetic-polaron-switched positive and negative magnetoresistance in the GdSi single crystal|Hai-Feng Li,Yinguo Xiao,Berthold Schmitz,Jörg Persson,Wolfgang Schmidt,Paul Meuffels,Georg Roth,Thomas Brückel###
(1034406, 1034406)
 Their theory-breaking magnetic-field dependencies [PMRVdominantly linear; negative MR value (NMRV) quadratic] and the unusual NTVEindicate that PMRV is induced by the formation of magnetic polarons in 5d<missing VAR>bands, whereas NMRV is possibly due to abated electron-spin scatteringresulting from magnetic-field-aligned local 4f<missing VAR> spins.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 415, '%', 2],[62.0, -10.5, '%', 1]

V
###Possible magnetic-polaron-switched positive and negative magnetoresistance in the GdSi single crystal|Hai-Feng Li,Yinguo Xiao,Berthold Schmitz,Jörg Persson,Wolfgang Schmidt,Paul Meuffels,Georg Roth,Thomas Brückel###
(1034409, 1034409)
 Their theory-breaking magnetic-field dependencies [PMRVdominantly linear; negative MR value (NMRV) quadratic] and the unusual NTVEindicate that PMRV is induced by the formation of magnetic polarons in 5d<missing VAR>bands, whereas NMRV is possibly due to abated electron-spin scatteringresulting from magnetic-field-aligned local 4f<missing VAR> spins.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 415, '%', 2],[65.0, -10.5, '%', 1]

N
###Possible magnetic-polaron-switched positive and negative magnetoresistance in the GdSi single crystal|Hai-Feng Li,Yinguo Xiao,Berthold Schmitz,Jörg Persson,Wolfgang Schmidt,Paul Meuffels,Georg Roth,Thomas Brückel###
(1034438, 1034438)
 Their theory-breaking magnetic-field dependencies [PMRVdominantly linear; negative MR value (NMRV) quadratic] and the unusual NTVEindicate that PMRV is induced by the formation of magnetic polarons in 5d<missing VAR>bands, whereas NMRV is possibly due to abated electron-spin scatteringresulting from magnetic-field-aligned local 4f<missing VAR> spins.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 415, '%', 2],[94.0, -10.5, '%', 1]

V
###Possible magnetic-polaron-switched positive and negative magnetoresistance in the GdSi single crystal|Hai-Feng Li,Yinguo Xiao,Berthold Schmitz,Jörg Persson,Wolfgang Schmidt,Paul Meuffels,Georg Roth,Thomas Brückel###
(1034441, 1034441)
 Their theory-breaking magnetic-field dependencies [PMRVdominantly linear; negative MR value (NMRV) quadratic] and the unusual NTVEindicate that PMRV is induced by the formation of magnetic polarons in 5d<missing VAR>bands, whereas NMRV is possibly due to abated electron-spin scatteringresulting from magnetic-field-aligned local 4f<missing VAR> spins.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 415, '%', 2],[97.0, -10.5, '%', 1]

F
###Possible magnetic-polaron-switched positive and negative magnetoresistance in the GdSi single crystal|Hai-Feng Li,Yinguo Xiao,Berthold Schmitz,Jörg Persson,Wolfgang Schmidt,Paul Meuffels,Georg Roth,Thomas Brückel###
(1034515, 1034515)
 Our results may open upa new avenue of searching for giant MR materials by suppressing the AFM<missing VAR>transition temperature, opposite the case in manganites, and provide apromising approach to novel magnetic and electric devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[227.0, 415, '%', 3],[171.0, -10.5, '%', 2]

CaIrO3
###Persistent semi-metal-like nature of epitaxial perovskite CaIrO3 thin films|Abhijit Biswas,Yoon Hee Jeong###
(1034583, 1034586)
Persistent semi-metal-like nature of epitaxial perovskite CaIrO3 thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 5, 'd', 1],[348.0, 5, 'd', 6]

BO3
###Persistent semi-metal-like nature of epitaxial perovskite CaIrO3 thin films|Abhijit Biswas,Yoon Hee Jeong###
(1034609, 1034611)
 Strong spin-orbit coupled 5d transition metal based ABO3 oxides, especiallyiridates, allow tuning parameters in the phase diagram and may demonstrateimportant functionalities, for example, by means of strain effects andsymmetry-breaking, because of the interplay between the Coulomb interactionsand strong spin-orbit coupling.
Featurization terminated normally.
0,0,0,0,0.25,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 5, 'd', 0],[323.0, 5, 'd', 5]

CaIrO3
###Persistent semi-metal-like nature of epitaxial perovskite CaIrO3 thin films|Abhijit Biswas,Yoon Hee Jeong###
(1034727, 1034730)
 Here, we have epitaxially stabilized highquality thin films of perovskite (Pv) CaIrO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 5, 'd', 1],[204.0, 5, 'd', 4]

In
###Persistent semi-metal-like nature of epitaxial perovskite CaIrO3 thin films|Abhijit Biswas,Yoon Hee Jeong###
(1034849, 1034849)
 In addition, magnetoresistance remainspositive with a quadratic field dependence.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[249.0, 5, 'd', 4],[85.0, 5, 'd', 1]

CaIrO3
###Persistent semi-metal-like nature of epitaxial perovskite CaIrO3 thin films|Abhijit Biswas,Yoon Hee Jeong###
(1034889, 1034892)
 This persistent semi-metal-likenature of Pv-CaIrO3 thin films with minute changes in the effective correlationby strain may provide new wisdom into strong spin-orbit coupled 5d based oxidephysics.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[289.0, 5, 'd', 5],[42.0, 5, 'd', 0]

Cd3As2
###Tuning the scattering mechanism in three-dimensional Dirac semimetal Cd$_{3}$As$_{2}$|A. Pariari,N. Khan,R. Singha,B. Satpati,P. Mandal###
(1034970, 1034973)
Tuning the scattering mechanism in three-dimensional Dirac semimetal Cd3As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[248.0, 2, '%', 5],[276.0, 2, 'to', 6],[278.0, 4, '%', 6],[304.0, 9, 'T', 6]

Cd3As2
###Tuning the scattering mechanism in three-dimensional Dirac semimetal Cd$_{3}$As$_{2}$|A. Pariari,N. Khan,R. Singha,B. Satpati,P. Mandal###
(1034990, 1034993)
 To probe the charge scattering mechanism in Cd3As2 single crystal,we have analyzed the temperature and magnetic field dependence of the Seebeckcoefficient (S).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[228.0, 2, '%', 4],[256.0, 2, 'to', 5],[258.0, 4, '%', 5],[284.0, 9, 'T', 5]

(S)
###Tuning the scattering mechanism in three-dimensional Dirac semimetal Cd$_{3}$As$_{2}$|A. Pariari,N. Khan,R. Singha,B. Satpati,P. Mandal###
(1035028, 1035030)
 To probe the charge scattering mechanism in Cd3As2 single crystal,we have analyzed the temperature and magnetic field dependence of the Seebeckcoefficient (S).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[191.0, 2, '%', 4],[219.0, 2, 'to', 5],[221.0, 4, '%', 5],[247.0, 9, 'T', 5]

S
###Tuning the scattering mechanism in three-dimensional Dirac semimetal Cd$_{3}$As$_{2}$|A. Pariari,N. Khan,R. Singha,B. Satpati,P. Mandal###
(1035043, 1035043)
 The large saturation value of S at high field clearlydemonstrates the linear energy dispersion of three-dimensional Dirac fermion.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 2, '%', 3],[206.0, 2, 'to', 4],[208.0, 4, '%', 4],[234.0, 9, 'T', 4]

In
###Tuning the scattering mechanism in three-dimensional Dirac semimetal Cd$_{3}$As$_{2}$|A. Pariari,N. Khan,R. Singha,B. Satpati,P. Mandal###
(1035123, 1035123)
 Awide tunability of the charge scattering mechanism has been realized by varyingthe strength of the magnetic field and carrier density via In doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 2, '%', 2],[126.0, 2, 'to', 3],[128.0, 4, '%', 3],[154.0, 9, 'T', 3]

In
###Tuning the scattering mechanism in three-dimensional Dirac semimetal Cd$_{3}$As$_{2}$|A. Pariari,N. Khan,R. Singha,B. Satpati,P. Mandal###
(1035224, 1035224)
 On the other hand, thescattering time enters into the inverse energy-dependent regime and the Fermisurface strongly modifies with 2% In doping at Cd site.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 2, '%', 0],[25.0, 2, 'to', 1],[27.0, 4, '%', 1],[53.0, 9, 'T', 1]

Cd
###Tuning the scattering mechanism in three-dimensional Dirac semimetal Cd$_{3}$As$_{2}$|A. Pariari,N. Khan,R. Singha,B. Satpati,P. Mandal###
(1035230, 1035230)
 On the other hand, thescattering time enters into the inverse energy-dependent regime and the Fermisurface strongly modifies with 2% In doping at Cd site.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 2, '%', 0],[19.0, 2, 'to', 1],[21.0, 4, '%', 1],[47.0, 9, 'T', 1]

In
###Tuning the scattering mechanism in three-dimensional Dirac semimetal Cd$_{3}$As$_{2}$|A. Pariari,N. Khan,R. Singha,B. Satpati,P. Mandal###
(1035244, 1035244)
 With further increasein In content from 2 to 4%, we did not observe any Shubnikov-de Haasoscillation up to 9 T field, but the magnetoresistance is found to be quitelarge as in the case of undoped sample.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 2, '%', 1],[5.0, 2, 'to', 0],[7.0, 4, '%', 0],[33.0, 9, 'T', 0]

FeSe
###Dichotomy between the hole and electrons behavior in the multiband FeSe probed by ultra high magnetic fields|M. D. Watson,T. Yamashita,S. Kasahara,W. Knafo,M. Nardone,J. Beard,F. Hardy,A. McCollam,A. Narayanan,S. F. Blake,T. Wolf,A. A. Haghighirad,C. Meingast,A. J. Schofield,H. von Lohneysen,Y. Matsuda,A. I. Coldea,T. Shibauchi###
(1035344, 1035345)
Dichotomy between the hole and electrons behavior in the multiband FeSe probed by ultra high magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 88, 'T', 1],[54.0, 0.15, 'K', 1]

FeSe
###Dichotomy between the hole and electrons behavior in the multiband FeSe probed by ultra high magnetic fields|M. D. Watson,T. Yamashita,S. Kasahara,W. Knafo,M. Nardone,J. Beard,F. Hardy,A. McCollam,A. Narayanan,S. F. Blake,T. Wolf,A. A. Haghighirad,C. Meingast,A. J. Schofield,H. von Lohneysen,Y. Matsuda,A. I. Coldea,T. Shibauchi###
(1035428, 1035429)
 Magnetoresistivity r<missing VAR>hoxx and Hall resistivity r<missing VAR>hoxy in ultra highmagnetic fields up to 88T are measured down to 0.15K to clarify the multibandelectronic structure in high-quality single crystals of superconducting FeSe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 88, 'T', 0],[29.0, 0.15, 'K', 0]

At
###Dichotomy between the hole and electrons behavior in the multiband FeSe probed by ultra high magnetic fields|M. D. Watson,T. Yamashita,S. Kasahara,W. Knafo,M. Nardone,J. Beard,F. Hardy,A. McCollam,A. Narayanan,S. F. Blake,T. Wolf,A. A. Haghighirad,C. Meingast,A. J. Schofield,H. von Lohneysen,Y. Matsuda,A. I. Coldea,T. Shibauchi###
(1035433, 1035433)
At low temperatures and high fields we observe quantum oscillations in bothresistivity and Hall effect, confirming the multiband Fermi surface with smallvolumes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 88, 'T', 1],[34.0, 0.15, 'K', 1]

FeSe
###Dichotomy between the hole and electrons behavior in the multiband FeSe probed by ultra high magnetic fields|M. D. Watson,T. Yamashita,S. Kasahara,W. Knafo,M. Nardone,J. Beard,F. Hardy,A. McCollam,A. Narayanan,S. F. Blake,T. Wolf,A. A. Haghighirad,C. Meingast,A. J. Schofield,H. von Lohneysen,Y. Matsuda,A. I. Coldea,T. Shibauchi###
(1035679, 1035680)
 The low-fieldmagnetotransport data in the normal state suggest that, in addition to one holeand one almost compensated electron bands, the orthorhombic phase of FeSeexhibits an additional tiny electron pocket with a high mobility.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[289.0, 88, 'T', 4],[280.0, 0.15, 'K', 4]

SmB6
###Robust local and non-local transport in the Topological Kondo Insulator SmB$_{6}$ in the presence of high magnetic field|Sangram Biswas,Ramya Nagarajan,Suman Sarkar,Kazi Rafsanjani Amin,M. Ciomaga Hatnean,S. Tewari,G. Balakrishnan,Aveek Bid###
(1035734, 1035736)
Robust local and non-local transport in the Topological Kondo Insulator SmB6 in the presence of high magnetic field.
Featurization terminated normally.
0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SmB6
###Robust local and non-local transport in the Topological Kondo Insulator SmB$_{6}$ in the presence of high magnetic field|Sangram Biswas,Ramya Nagarajan,Suman Sarkar,Kazi Rafsanjani Amin,M. Ciomaga Hatnean,S. Tewari,G. Balakrishnan,Aveek Bid###
(1035753, 1035755)
 SmB6 has been predicted to be a Kondo Topological Insulator withtopologically protected conducting surface states.
Featurization terminated normally.
0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SmB6
###Robust local and non-local transport in the Topological Kondo Insulator SmB$_{6}$ in the presence of high magnetic field|Sangram Biswas,Ramya Nagarajan,Suman Sarkar,Kazi Rafsanjani Amin,M. Ciomaga Hatnean,S. Tewari,G. Balakrishnan,Aveek Bid###
(1035823, 1035825)
 We have studiedquantitatively the electrical transport through surface states in high qualitysingle crystals of SmB6.
Featurization terminated normally.
0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Robust local and non-local transport in the Topological Kondo Insulator SmB$_{6}$ in the presence of high magnetic field|Sangram Biswas,Ramya Nagarajan,Suman Sarkar,Kazi Rafsanjani Amin,M. Ciomaga Hatnean,S. Tewari,G. Balakrishnan,Aveek Bid###
(1035901, 1035901)
 In contrast to generalexpectations, the electrical transport properties of the surface channels wasfound to be insensitive to high magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LuPtBi
###High Electron Mobility and Large Magnetoresistance in the Half-Heusler Semimetal LuPtBi|Zhipeng Hou,Wenhong Wang,Guizhou Xu,Xiaoming Zhang,Zhiyang Wei,Shipeng Shen,Enke Liu,Yuan Yao,Yisheng Chai,Young Sun,Xuekui Xi,Wenquan Wang,Zhongyuan Liu,Guangheng Wu,Xi-xiang Zhang###
(1036030, 1036032)
High Electron Mobility and Large Magnetoresistance in the Half-Heusler Semimetal LuPtBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 79000, 'cm', 2],[138.0, 3200, '%', 2],[142.0, 2, 'K', 2],[154.0, 300, 'K', 3],[163.0, 10500, 'cm', 3]

LuPtBi
###High Electron Mobility and Large Magnetoresistance in the Half-Heusler Semimetal LuPtBi|Zhipeng Hou,Wenhong Wang,Guizhou Xu,Xiaoming Zhang,Zhiyang Wei,Shipeng Shen,Enke Liu,Yuan Yao,Yisheng Chai,Young Sun,Xuekui Xi,Wenquan Wang,Zhongyuan Liu,Guangheng Wu,Xi-xiang Zhang###
(1036121, 1036123)
 Here, we report on thediscovery of an electron-hole-compensated half-Heusler semimetal LuPtBi thatexhibits an extremely high electron mobility of up to 79000 cm2/Vs with anon-saturating positive MR as large as 3200% at 2 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 79000, 'cm', 0],[47.0, 3200, '%', 0],[51.0, 2, 'K', 0],[63.0, 300, 'K', 1],[72.0, 10500, 'cm', 1]

BaFe2As2
###Aging effect in Magnetotransport Property of Oxygen adsorbed BaFe2As2|Nilotpal Ghosh,Santhosh Raj###
(1036401, 1036405)
Aging effect in Magnetotransport Property of Oxygen adsorbed BaFe2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[200.0, 18, 'K', 3],[203.0, 0, 'and', 3],[204.0, 5, 'T', 3]

(O2)
###Aging effect in Magnetotransport Property of Oxygen adsorbed BaFe2As2|Nilotpal Ghosh,Santhosh Raj###
(1036414, 1036417)
 Presence of Oxygen (O2) has been found by Energy Dispersive X<missing VAR>-ray Analysis(EDAX) on the surfaces of flux grown BaFe2As2 single crystals which were keptin air ambience for several months.
Featurization successful!
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 18, 'K', 2],[191.0, 0, 'and', 2],[192.0, 5, 'T', 2]

BaFe2As2
###Aging effect in Magnetotransport Property of Oxygen adsorbed BaFe2As2|Nilotpal Ghosh,Santhosh Raj###
(1036457, 1036461)
 Presence of Oxygen (O2) has been found by Energy Dispersive X<missing VAR>-ray Analysis(EDAX) on the surfaces of flux grown BaFe2As2 single crystals which were keptin air ambience for several months.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 18, 'K', 2],[147.0, 0, 'and', 2],[148.0, 5, 'T', 2]

O2
###Aging effect in Magnetotransport Property of Oxygen adsorbed BaFe2As2|Nilotpal Ghosh,Santhosh Raj###
(1036497, 1036498)
 Transport studies show that the O2 adsorbedcrystals are more resistive and do not display any sharp slope change near 140K which is the well known Spin Density Wave (SD<missing VAR>W) transition temperature (TSDW)accompanying structural transition for as grown BaFe2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 18, 'K', 1],[110.0, 0, 'and', 1],[111.0, 5, 'T', 1]

K
###Aging effect in Magnetotransport Property of Oxygen adsorbed BaFe2As2|Nilotpal Ghosh,Santhosh Raj###
(1036532, 1036532)
 Transport studies show that the O2 adsorbedcrystals are more resistive and do not display any sharp slope change near 140K which is the well known Spin Density Wave (SD<missing VAR>W) transition temperature (TSDW)accompanying structural transition for as grown BaFe2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 18, 'K', 1],[76.0, 0, 'and', 1],[77.0, 5, 'T', 1]

S
###Aging effect in Magnetotransport Property of Oxygen adsorbed BaFe2As2|Nilotpal Ghosh,Santhosh Raj###
(1036551, 1036551)
 Transport studies show that the O2 adsorbedcrystals are more resistive and do not display any sharp slope change near 140K which is the well known Spin Density Wave (SD<missing VAR>W) transition temperature (TSDW)accompanying structural transition for as grown BaFe2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 18, 'K', 1],[57.0, 0, 'and', 1],[58.0, 5, 'T', 1]

W
###Aging effect in Magnetotransport Property of Oxygen adsorbed BaFe2As2|Nilotpal Ghosh,Santhosh Raj###
(1036553, 1036553)
 Transport studies show that the O2 adsorbedcrystals are more resistive and do not display any sharp slope change near 140K which is the well known Spin Density Wave (SD<missing VAR>W) transition temperature (TSDW)accompanying structural transition for as grown BaFe2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 18, 'K', 1],[55.0, 0, 'and', 1],[56.0, 5, 'T', 1]

W
###Aging effect in Magnetotransport Property of Oxygen adsorbed BaFe2As2|Nilotpal Ghosh,Santhosh Raj###
(1036564, 1036564)
 Transport studies show that the O2 adsorbedcrystals are more resistive and do not display any sharp slope change near 140K which is the well known Spin Density Wave (SD<missing VAR>W) transition temperature (TSDW)accompanying structural transition for as grown BaFe2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 18, 'K', 1],[44.0, 0, 'and', 1],[45.0, 5, 'T', 1]

BaFe2As2
###Aging effect in Magnetotransport Property of Oxygen adsorbed BaFe2As2|Nilotpal Ghosh,Santhosh Raj###
(1036580, 1036584)
 Transport studies show that the O2 adsorbedcrystals are more resistive and do not display any sharp slope change near 140K which is the well known Spin Density Wave (SD<missing VAR>W) transition temperature (TSDW)accompanying structural transition for as grown BaFe2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 18, 'K', 1],[24.0, 0, 'and', 1],[25.0, 5, 'T', 1]

(H)
###Aging effect in Magnetotransport Property of Oxygen adsorbed BaFe2As2|Nilotpal Ghosh,Santhosh Raj###
(1036640, 1036642)
 Magnetoresistance(MR) is noticed to increase as a function of applied field (H) quitedifferently than that for as grown crystals below TSDW which may be attributedto aging effec<missing PERIOD>
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 18, 'K', 1],[32.0, 0, 'and', 1],[31.0, 5, 'T', 1]

W
###Aging effect in Magnetotransport Property of Oxygen adsorbed BaFe2As2|Nilotpal Ghosh,Santhosh Raj###
(1036666, 1036666)
 Magnetoresistance(MR) is noticed to increase as a function of applied field (H) quitedifferently than that for as grown crystals below TSDW which may be attributedto aging effec<missing PERIOD>
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 18, 'K', 1],[58.0, 0, 'and', 1],[57.0, 5, 'T', 1]

Co
###Characterization of spin relaxation anisotropy in Co using spin pumping|Yi Li,Wei Cao,William E. Bailey###
(1036703, 1036703)
Characterization of spin relaxation anisotropy in Co using spin pumping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Characterization of spin relaxation anisotropy in Co using spin pumping|Yi Li,Wei Cao,William E. Bailey###
(1036787, 1036787)
 Here we characterizethe anisotropy of spin relaxation in Co using the spin pumping contribution toGilbert damping in noncollinearly magnetized Py1-xCux/Cu/Co trilayerstructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu/Co
###Characterization of spin relaxation anisotropy in Co using spin pumping|Yi Li,Wei Cao,William E. Bailey###
(1036819, 1036821)
 Here we characterizethe anisotropy of spin relaxation in Co using the spin pumping contribution toGilbert damping in noncollinearly magnetized Py1-xCux/Cu/Co trilayerstructures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Co
###Characterization of spin relaxation anisotropy in Co using spin pumping|Yi Li,Wei Cao,William E. Bailey###
(1036848, 1036848)
 The static magnetization angle between Py1-xCux and Co,adjusted under field bias perpendicular to film planes, controls theprojections of longitudinal and transverse spin current pumped fromPy1-xCux into Co.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Characterization of spin relaxation anisotropy in Co using spin pumping|Yi Li,Wei Cao,William E. Bailey###
(1036902, 1036902)
 The static magnetization angle between Py1-xCux and Co,adjusted under field bias perpendicular to film planes, controls theprojections of longitudinal and transverse spin current pumped fromPy1-xCux into Co.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Characterization of spin relaxation anisotropy in Co using spin pumping|Yi Li,Wei Cao,William E. Bailey###
(1036926, 1036926)
 We find nearly isotropic absorption of pure spincurrent in Co using this technique; fits to a diffusive transport model yieldthe longitudinal spin relaxation length < 2 nm in Co.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Characterization of spin relaxation anisotropy in Co using spin pumping|Yi Li,Wei Cao,William E. Bailey###
(1036968, 1036968)
 We find nearly isotropic absorption of pure spincurrent in Co using this technique; fits to a diffusive transport model yieldthe longitudinal spin relaxation length < 2 nm in Co.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Characterization of spin relaxation anisotropy in Co using spin pumping|Yi Li,Wei Cao,William E. Bailey###
(1037037, 1037037)
 The longitudinal spinrelaxation lengths found are an order of magnitude smaller than thosedetermined by current-perpendicular-to-planes giant magnetoresistancemeasurements, but comparable with transverse spin relaxation lengths in Codetermined by spin pumping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiFe/MoS2/NiFe
###Spin-valve Effect in NiFe/MoS2/NiFe Junctions|Weiyi Wang,Awadhesh Narayan,Lei Tang,Kapildeb Dolui,Yanwen Liu,Xiang Yuan,Yibo Jin,Yizheng Wu,Ivan Rungger,Stefano Sanvito,Faxian Xiu###
(1037065, 1037073)
Spin-valve Effect in NiFe/MoS2/NiFe Junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[254.0, 0.73, '%', 5],[303.0, 9, '%', 6]

Ds
###Spin-valve Effect in NiFe/MoS2/NiFe Junctions|Weiyi Wang,Awadhesh Narayan,Lei Tang,Kapildeb Dolui,Yanwen Liu,Xiang Yuan,Yibo Jin,Yizheng Wu,Ivan Rungger,Stefano Sanvito,Faxian Xiu###
(1037098, 1037098)
 Two-dimensional (2D) layered transition metal dichalcogenides (TMDs) havebeen recently proposed as appealing candidate materials for spintronicapplications owing to their distinctive atomic crystal structure and exoticphysical properties arising from the large bonding anisotropy.
EXCEPTION 3: IndexError for Ds
MoS2
[229.0, 0.73, '%', 4],[278.0, 9, '%', 5]

I
###Pseudospin-valve effect on transport in junctions of three-dimensional topological insulator surfaces|Sthitadhi Roy,Krishanu Roychowdhury,Sourin Das###
(1037596, 1037596)
 To put this claim on firm footing, we present results for T<missing VAR>I surfacesperpendicular to the crystal growth axis, which clearly show that the tunnelingconductance between two such T<missing VAR>I surfaces of the same T<missing VAR>I material is dominatedby this half metallic behavior leading to physics reminiscent of a spin-valve.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 3, 'D', 1]

I
###Pseudospin-valve effect on transport in junctions of three-dimensional topological insulator surfaces|Sthitadhi Roy,Krishanu Roychowdhury,Sourin Das###
(1037636, 1037636)
 To put this claim on firm footing, we present results for T<missing VAR>I surfacesperpendicular to the crystal growth axis, which clearly show that the tunnelingconductance between two such T<missing VAR>I surfaces of the same T<missing VAR>I material is dominatedby this half metallic behavior leading to physics reminiscent of a spin-valve.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 3, 'D', 1]

I
###Pseudospin-valve effect on transport in junctions of three-dimensional topological insulator surfaces|Sthitadhi Roy,Krishanu Roychowdhury,Sourin Das###
(1037647, 1037647)
 To put this claim on firm footing, we present results for T<missing VAR>I surfacesperpendicular to the crystal growth axis, which clearly show that the tunnelingconductance between two such T<missing VAR>I surfaces of the same T<missing VAR>I material is dominatedby this half metallic behavior leading to physics reminiscent of a spin-valve.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 3, 'D', 1]

I
###Pseudospin-valve effect on transport in junctions of three-dimensional topological insulator surfaces|Sthitadhi Roy,Krishanu Roychowdhury,Sourin Das###
(1037722, 1037722)
Further using the generalized tunnel magnetoresistance derived in this work wealso study the tunneling current between arbitrary T<missing VAR>I surfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[217.0, 3, 'D', 2]

H
###Surface Transport in the ν=0 Quantum Hall Ferromagnetic State in the Organic Dirac Fermion System|Toshihito Osada###
(1037860, 1037860)
 We discuss the surface magnetotransport in the quantum Hall (Q<missing VAR>H)ferromagnetic state expected in the organic Dirac fermion systemalpha-(BEDT-TTF)2I3.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Surface Transport in the ν=0 Quantum Hall Ferromagnetic State in the Organic Dirac Fermion System|Toshihito Osada###
(1037886, 1037886)
 We discuss the surface magnetotransport in the quantum Hall (Q<missing VAR>H)ferromagnetic state expected in the organic Dirac fermion systemalpha-(BEDT-TTF)2I3.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Surface Transport in the ν=0 Quantum Hall Ferromagnetic State in the Organic Dirac Fermion System|Toshihito Osada###
(1037893, 1037893)
 We discuss the surface magnetotransport in the quantum Hall (Q<missing VAR>H)ferromagnetic state expected in the organic Dirac fermion systemalpha-(BEDT-TTF)2I3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I3
###Surface Transport in the ν=0 Quantum Hall Ferromagnetic State in the Organic Dirac Fermion System|Toshihito Osada###
(1037896, 1037897)
 We discuss the surface magnetotransport in the quantum Hall (Q<missing VAR>H)ferromagnetic state expected in the organic Dirac fermion systemalpha-(BEDT-TTF)2I3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Surface Transport in the ν=0 Quantum Hall Ferromagnetic State in the Organic Dirac Fermion System|Toshihito Osada###
(1037903, 1037903)
 The Q<missing VAR>H ferromagnetic state is one of the possible nu0Q<missing VAR>H states in the two-dimensional Dirac fermion system resulting from thedegeneracy breaking of the n<missing VAR>0 Landau level.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Surface Transport in the ν=0 Quantum Hall Ferromagnetic State in the Organic Dirac Fermion System|Toshihito Osada###
(1037924, 1037924)
 The Q<missing VAR>H ferromagnetic state is one of the possible nu0Q<missing VAR>H states in the two-dimensional Dirac fermion system resulting from thedegeneracy breaking of the n<missing VAR>0 Landau level.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Surface Transport in the ν=0 Quantum Hall Ferromagnetic State in the Organic Dirac Fermion System|Toshihito Osada###
(1038013, 1038013)
 We have studied the interlayer surface transport via helical edgestate in the multilayer Q<missing VAR>H ferromagnet, in which the bulk region is insulating.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Surface Transport in the ν=0 Quantum Hall Ferromagnetic State in the Organic Dirac Fermion System|Toshihito Osada###
(1038116, 1038116)
 These features explain the observed interlayer magnetoresistance inalpha-(BEDT-TTF)2I3.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Surface Transport in the ν=0 Quantum Hall Ferromagnetic State in the Organic Dirac Fermion System|Toshihito Osada###
(1038123, 1038123)
 These features explain the observed interlayer magnetoresistance inalpha-(BEDT-TTF)2I3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I3
###Surface Transport in the ν=0 Quantum Hall Ferromagnetic State in the Organic Dirac Fermion System|Toshihito Osada###
(1038126, 1038127)
 These features explain the observed interlayer magnetoresistance inalpha-(BEDT-TTF)2I3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi
###Density-of-states fluctuation-induced negative out-of-plane magnetoresistance in overdoped Bi-2212|Tomohiro Usui,Shintaro Adachi,Takao Watanabe,Terukazu Nishizaki###
(1038162, 1038162)
Density-of-states fluctuation-induced negative out-of-plane magnetoresistance in overdoped Bi-2212.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi1.6Pb0.4Sr2CaCu2O8
###Density-of-states fluctuation-induced negative out-of-plane magnetoresistance in overdoped Bi-2212|Tomohiro Usui,Shintaro Adachi,Takao Watanabe,Terukazu Nishizaki###
(1038197, 1038207)
 We analyzed the in-plane and out-of-plane magnetoresistance (MR) foroverdoped Bi1.6Pb0.4Sr2CaCu2O8delta (Bi-2212) singlecrystals using superconductive fluctuation theory, which considers thedensity-of-states (D<missing VAR>OS) contribution in layered superconductors with theconventional s<missing VAR>-wave pairing state.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.06666666666666667,0,0,0,0,0,0,0,0,0.13333333333333333,0,0,0,0,0,0,0,0,0.13333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.02666666666666667,0.10666666666666667,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi
###Density-of-states fluctuation-induced negative out-of-plane magnetoresistance in overdoped Bi-2212|Tomohiro Usui,Shintaro Adachi,Takao Watanabe,Terukazu Nishizaki###
(1038211, 1038211)
 We analyzed the in-plane and out-of-plane magnetoresistance (MR) foroverdoped Bi1.6Pb0.4Sr2CaCu2O8delta (Bi-2212) singlecrystals using superconductive fluctuation theory, which considers thedensity-of-states (D<missing VAR>OS) contribution in layered superconductors with theconventional s<missing VAR>-wave pairing state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Density-of-states fluctuation-induced negative out-of-plane magnetoresistance in overdoped Bi-2212|Tomohiro Usui,Shintaro Adachi,Takao Watanabe,Terukazu Nishizaki###
(1038246, 1038246)
 We analyzed the in-plane and out-of-plane magnetoresistance (MR) foroverdoped Bi1.6Pb0.4Sr2CaCu2O8delta (Bi-2212) singlecrystals using superconductive fluctuation theory, which considers thedensity-of-states (D<missing VAR>OS) contribution in layered superconductors with theconventional s<missing VAR>-wave pairing state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OS
###Density-of-states fluctuation-induced negative out-of-plane magnetoresistance in overdoped Bi-2212|Tomohiro Usui,Shintaro Adachi,Takao Watanabe,Terukazu Nishizaki###
(1038373, 1038374)
 The out-of-plane results are well reproducedby the theory, implying that the large, negative out-of-plane MR as well as thesharp increase in the zero-field out-of-plane resistivity rhoc<missing VAR> near thesuperconducting transition temperature Tc originate from the superconductiveD<missing VAR>OS fluctuation effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OS
###Density-of-states fluctuation-induced negative out-of-plane magnetoresistance in overdoped Bi-2212|Tomohiro Usui,Shintaro Adachi,Takao Watanabe,Terukazu Nishizaki###
(1038410, 1038411)
 On the other hand, the in-plane results are betterreproduced without the D<missing VAR>OS contribution (i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Se3
###Proximity effect between a topological insulator and a magnetic insulator with large perpendicular anisotropy|Wenmin Yang,Shuo Yang,Qinghua Zhang,Yang Xu,Shipeng Shen,Jian Liao,Jing Teng,Cewen Nan,Lin Gu,Young Sun,Kehui Wu,Yongqing Li###
(1038533, 1038536)
 We report that thin films of a prototype topological insulator,Bi2Se3, can be epitaxially grown onto the (0001) surface ofBaFe12O19(BaM), a magnetic insulator with high Curie temperature andlarge perpendicular anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O19
###Proximity effect between a topological insulator and a magnetic insulator with large perpendicular anisotropy|Wenmin Yang,Shuo Yang,Qinghua Zhang,Yang Xu,Shipeng Shen,Jian Liao,Jing Teng,Cewen Nan,Lin Gu,Young Sun,Kehui Wu,Yongqing Li###
(1038563, 1038564)
 We report that thin films of a prototype topological insulator,Bi2Se3, can be epitaxially grown onto the (0001) surface ofBaFe12O19(BaM), a magnetic insulator with high Curie temperature andlarge perpendicular anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ba
###Proximity effect between a topological insulator and a magnetic insulator with large perpendicular anisotropy|Wenmin Yang,Shuo Yang,Qinghua Zhang,Yang Xu,Shipeng Shen,Jian Liao,Jing Teng,Cewen Nan,Lin Gu,Young Sun,Kehui Wu,Yongqing Li###
(1038566, 1038566)
 We report that thin films of a prototype topological insulator,Bi2Se3, can be epitaxially grown onto the (0001) surface ofBaFe12O19(BaM), a magnetic insulator with high Curie temperature andlarge perpendicular anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Proximity effect between a topological insulator and a magnetic insulator with large perpendicular anisotropy|Wenmin Yang,Shuo Yang,Qinghua Zhang,Yang Xu,Shipeng Shen,Jian Liao,Jing Teng,Cewen Nan,Lin Gu,Young Sun,Kehui Wu,Yongqing Li###
(1038595, 1038595)
 In the Bi2Se3 thin films grown onnon-magnetic substrates, classic weak antilocalization (WAL) is manifested ascusp-shaped positive magnetoresistance (MR) in perpendicular magnetic fieldsand parabola-shaped positive MR in parallel fields, whereas inBi2Se3/BaM<missing VAR> heterostructures the low field MR is parabola-shaped,which is positive in perpendicular fields and negative in parallel fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Se3
###Proximity effect between a topological insulator and a magnetic insulator with large perpendicular anisotropy|Wenmin Yang,Shuo Yang,Qinghua Zhang,Yang Xu,Shipeng Shen,Jian Liao,Jing Teng,Cewen Nan,Lin Gu,Young Sun,Kehui Wu,Yongqing Li###
(1038599, 1038602)
 In the Bi2Se3 thin films grown onnon-magnetic substrates, classic weak antilocalization (WAL) is manifested ascusp-shaped positive magnetoresistance (MR) in perpendicular magnetic fieldsand parabola-shaped positive MR in parallel fields, whereas inBi2Se3/BaM<missing VAR> heterostructures the low field MR is parabola-shaped,which is positive in perpendicular fields and negative in parallel fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Proximity effect between a topological insulator and a magnetic insulator with large perpendicular anisotropy|Wenmin Yang,Shuo Yang,Qinghua Zhang,Yang Xu,Shipeng Shen,Jian Liao,Jing Teng,Cewen Nan,Lin Gu,Young Sun,Kehui Wu,Yongqing Li###
(1038627, 1038627)
 In the Bi2Se3 thin films grown onnon-magnetic substrates, classic weak antilocalization (WAL) is manifested ascusp-shaped positive magnetoresistance (MR) in perpendicular magnetic fieldsand parabola-shaped positive MR in parallel fields, whereas inBi2Se3/BaM<missing VAR> heterostructures the low field MR is parabola-shaped,which is positive in perpendicular fields and negative in parallel fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Se3/Ba
###Proximity effect between a topological insulator and a magnetic insulator with large perpendicular anisotropy|Wenmin Yang,Shuo Yang,Qinghua Zhang,Yang Xu,Shipeng Shen,Jian Liao,Jing Teng,Cewen Nan,Lin Gu,Young Sun,Kehui Wu,Yongqing Li###
(1038684, 1038689)
 In the Bi2Se3 thin films grown onnon-magnetic substrates, classic weak antilocalization (WAL) is manifested ascusp-shaped positive magnetoresistance (MR) in perpendicular magnetic fieldsand parabola-shaped positive MR in parallel fields, whereas inBi2Se3/BaM<missing VAR> heterostructures the low field MR is parabola-shaped,which is positive in perpendicular fields and negative in parallel fields.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

W
###Proximity effect between a topological insulator and a magnetic insulator with large perpendicular anisotropy|Wenmin Yang,Shuo Yang,Qinghua Zhang,Yang Xu,Shipeng Shen,Jian Liao,Jing Teng,Cewen Nan,Lin Gu,Young Sun,Kehui Wu,Yongqing Li###
(1038773, 1038773)
 Themagnetic field and temperature dependence of the MR is explained as aconsequence of the suppression of WAL<missing VAR> due to strong magnetic interactions atthe Bi2Se3/BaM<missing VAR> interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Se3/Ba
###Proximity effect between a topological insulator and a magnetic insulator with large perpendicular anisotropy|Wenmin Yang,Shuo Yang,Qinghua Zhang,Yang Xu,Shipeng Shen,Jian Liao,Jing Teng,Cewen Nan,Lin Gu,Young Sun,Kehui Wu,Yongqing Li###
(1038792, 1038797)
 Themagnetic field and temperature dependence of the MR is explained as aconsequence of the suppression of WAL<missing VAR> due to strong magnetic interactions atthe Bi2Se3/BaM<missing VAR> interface.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

B
###Observation of Shubnikov de Haas and Aharanov-Bohm oscillations in silicon nanowires|Tahir Aslan,Davie Mtsuko,Christopher Coleman,Siphephile Ncube,Somnath Bhattacharyya###
(1039078, 1039078)
However, at low temperature the observed oscillation amplitude invariant of thefield is attributed to not only a strong size confinement and the pinning oforbits by impurities but also Aharanov Bohm (AB) oscillations due toedge-states that propagate quasi-ballistically through the nanowire.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[233.0, 20, 'to', 2],[232.0, 60, 'mT', 2],[217.0, 2, 'T', 2],[208.0, 100, 'K', 2],[198.0, 10, 'T', 2],[121.0, 0.001, 'me', 1],[118.0, 0.006, 'me', 1],[106.0, 3, 'to', 1],[88.0, 2, 'x', 1],[79.0, 9, 'x', 1]

O
###Observation of Shubnikov de Haas and Aharanov-Bohm oscillations in silicon nanowires|Tahir Aslan,Davie Mtsuko,Christopher Coleman,Siphephile Ncube,Somnath Bhattacharyya###
(1039155, 1039155)
 Theoverall oscillation on a linear positive magnetoresistance background can beattributed to temperature-dependent crossover of Shubnikov de Haas oscillations(SdHO) and AB oscillations in silicon nanowires.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[310.0, 20, 'to', 3],[309.0, 60, 'mT', 3],[294.0, 2, 'T', 3],[285.0, 100, 'K', 3],[275.0, 10, 'T', 3],[198.0, 0.001, 'me', 2],[195.0, 0.006, 'me', 2],[183.0, 3, 'to', 2],[165.0, 2, 'x', 2],[156.0, 9, 'x', 2]

B
###Observation of Shubnikov de Haas and Aharanov-Bohm oscillations in silicon nanowires|Tahir Aslan,Davie Mtsuko,Christopher Coleman,Siphephile Ncube,Somnath Bhattacharyya###
(1039161, 1039161)
 Theoverall oscillation on a linear positive magnetoresistance background can beattributed to temperature-dependent crossover of Shubnikov de Haas oscillations(SdHO) and AB oscillations in silicon nanowires.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[316.0, 20, 'to', 3],[315.0, 60, 'mT', 3],[300.0, 2, 'T', 3],[291.0, 100, 'K', 3],[281.0, 10, 'T', 3],[204.0, 0.001, 'me', 2],[201.0, 0.006, 'me', 2],[189.0, 3, 'to', 2],[171.0, 2, 'x', 2],[162.0, 9, 'x', 2]

P
###New memory devices based on the proton transfer process|Malgorzata Wierzbowska###
(1039218, 1039218)
 Memory devices operating due to the fast proton transfer (PT) process areproposed by means of the first-principles calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###New memory devices based on the proton transfer process|Malgorzata Wierzbowska###
(1039275, 1039275)
 Writing an informationis performed using the electrostatic potential of the scanning tunnelingmicroscopy (STM).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###New memory devices based on the proton transfer process|Malgorzata Wierzbowska###
(1039322, 1039322)
 Reading an information is based on the effect of the localmagnetization induced at the zigzag graphene nanoribbon (Z-GNR) edge -saturated with oxygen or the hydroxy group - and can be realized with the useof the giant magnetoresistance (GMR), magnetic tunnel junction (MTJ) orspin-transfer torque (STT) devices.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###New memory devices based on the proton transfer process|Malgorzata Wierzbowska###
(1039399, 1039399)
 Reading an information is based on the effect of the localmagnetization induced at the zigzag graphene nanoribbon (Z-GNR) edge -saturated with oxygen or the hydroxy group - and can be realized with the useof the giant magnetoresistance (GMR), magnetic tunnel junction (MTJ) orspin-transfer torque (STT) devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###New memory devices based on the proton transfer process|Malgorzata Wierzbowska###
(1039449, 1039449)
 The energetic barriers for the hop-forwardand -backward processes can be tuned by the distance and potential of the STMtip.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cd3As2
###Giant negative magnetoresistance induced by the chiral anomaly in individual Cd3As2 nanowires|Cai-Zhen Li,Li-Xian Wang,Haiwen Liu,Jian Wang,Zhi-Min Liao,Da-Peng Yu###
(1039554, 1039557)
Giant negative magnetoresistance induced by the chiral anomaly in individual Cd3As2 nanowires.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 3, 'D', 1],[190.0, -63, '%', 4],[195.0, 60, 'K', 4],[199.0, -11, '%', 4],[204.0, 300, 'K', 4]

Cd3As2
###Giant negative magnetoresistance induced by the chiral anomaly in individual Cd3As2 nanowires|Cai-Zhen Li,Li-Xian Wang,Haiwen Liu,Jian Wang,Zhi-Min Liao,Da-Peng Yu###
(1039562, 1039565)
 Cd3As2 is a newly booming Dirac semimetal with linear dispersion along allthree momentum directions and can be viewed as 3D analog of graphene.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 3, 'D', 0],[182.0, -63, '%', 3],[187.0, 60, 'K', 3],[191.0, -11, '%', 3],[196.0, 300, 'K', 3]

As
###Giant negative magnetoresistance induced by the chiral anomaly in individual Cd3As2 nanowires|Cai-Zhen Li,Li-Xian Wang,Haiwen Liu,Jian Wang,Zhi-Min Liao,Da-Peng Yu###
(1039614, 1039614)
 Asbreaking of either time reversal symmetry or spatial inversion symmetry, theDirac semimetal is believed to transform into Weyl semimetal with exotic chiralanomaly effect, while the experimental evidence of the chiral anomaly is stillmissing in Cd3As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 3, 'D', 1],[133.0, -63, '%', 2],[138.0, 60, 'K', 2],[142.0, -11, '%', 2],[147.0, 300, 'K', 2]

Cd3As2
###Giant negative magnetoresistance induced by the chiral anomaly in individual Cd3As2 nanowires|Cai-Zhen Li,Li-Xian Wang,Haiwen Liu,Jian Wang,Zhi-Min Liao,Da-Peng Yu###
(1039696, 1039699)
 Asbreaking of either time reversal symmetry or spatial inversion symmetry, theDirac semimetal is believed to transform into Weyl semimetal with exotic chiralanomaly effect, while the experimental evidence of the chiral anomaly is stillmissing in Cd3As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 3, 'D', 1],[48.0, -63, '%', 2],[53.0, 60, 'K', 2],[57.0, -11, '%', 2],[62.0, 300, 'K', 2]

Cd3As2
###Giant negative magnetoresistance induced by the chiral anomaly in individual Cd3As2 nanowires|Cai-Zhen Li,Li-Xian Wang,Haiwen Liu,Jian Wang,Zhi-Min Liao,Da-Peng Yu###
(1039721, 1039724)
 Here we report the magneto-transport properties ofindividual Cd3As2 nanowires.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 3, 'D', 2],[23.0, -63, '%', 1],[28.0, 60, 'K', 1],[32.0, -11, '%', 1],[37.0, 300, 'K', 1]

Cd3As2
###Giant negative magnetoresistance induced by the chiral anomaly in individual Cd3As2 nanowires|Cai-Zhen Li,Li-Xian Wang,Haiwen Liu,Jian Wang,Zhi-Min Liao,Da-Peng Yu###
(1039810, 1039813)
 Large negative magnetoresistance (MR) withmagnitude of -63% at 60 K and -11% at 300 K are observed when the magneticfield is parallel with the electric field direction, giving the evidence of thechiral magnetic effect in Cd3As2 nanowires.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, 3, 'D', 3],[63.0, -63, '%', 0],[58.0, 60, 'K', 0],[54.0, -11, '%', 0],[49.0, 300, 'K', 0]

In
###Giant negative magnetoresistance induced by the chiral anomaly in individual Cd3As2 nanowires|Cai-Zhen Li,Li-Xian Wang,Haiwen Liu,Jian Wang,Zhi-Min Liao,Da-Peng Yu###
(1039818, 1039818)
 In addition, the critical magneticfield BC, where there is an extremum of the negative MR, increases withincreasing temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[213.0, 3, 'D', 4],[71.0, -63, '%', 1],[66.0, 60, 'K', 1],[62.0, -11, '%', 1],[57.0, 300, 'K', 1]

BC
###Giant negative magnetoresistance induced by the chiral anomaly in individual Cd3As2 nanowires|Cai-Zhen Li,Li-Xian Wang,Haiwen Liu,Jian Wang,Zhi-Min Liao,Da-Peng Yu###
(1039832, 1039833)
 In addition, the critical magneticfield BC, where there is an extremum of the negative MR, increases withincreasing temperature.
Featurization terminated normally.
0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[227.0, 3, 'D', 4],[85.0, -63, '%', 1],[80.0, 60, 'K', 1],[76.0, -11, '%', 1],[71.0, 300, 'K', 1]

As
###Giant negative magnetoresistance induced by the chiral anomaly in individual Cd3As2 nanowires|Cai-Zhen Li,Li-Xian Wang,Haiwen Liu,Jian Wang,Zhi-Min Liao,Da-Peng Yu###
(1039866, 1039866)
 As the first observation of chiral anomaly inducednegative MR in Cd3As2 nanowires, it may offer valuable insights for lowdimensional physics in Dirac semimetals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[261.0, 3, 'D', 5],[119.0, -63, '%', 2],[114.0, 60, 'K', 2],[110.0, -11, '%', 2],[105.0, 300, 'K', 2]

Cd3As2
###Giant negative magnetoresistance induced by the chiral anomaly in individual Cd3As2 nanowires|Cai-Zhen Li,Li-Xian Wang,Haiwen Liu,Jian Wang,Zhi-Min Liao,Da-Peng Yu###
(1039890, 1039893)
 As the first observation of chiral anomaly inducednegative MR in Cd3As2 nanowires, it may offer valuable insights for lowdimensional physics in Dirac semimetals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[285.0, 3, 'D', 5],[143.0, -63, '%', 2],[138.0, 60, 'K', 2],[134.0, -11, '%', 2],[129.0, 300, 'K', 2]

P
###Magnetic state dependent transient lateral photovoltaic effect in patterned ferromagnetic metal-oxide-semiconductor films|Isidoro Martinez,Juan Pedro Cascales,Antonio Lara,Pablo Andres,Farkhad G. Aliev###
(1040006, 1040006)
 We investigate the influence of an external magnetic field on the magnitudeand dephasing of the transient lateral photovoltaic effect (T-LPE) inlithographically patterned Co lines of widths of a few microns grown overnaturally passivated p<missing VAR>-type Si(100).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Magnetic state dependent transient lateral photovoltaic effect in patterned ferromagnetic metal-oxide-semiconductor films|Isidoro Martinez,Juan Pedro Cascales,Antonio Lara,Pablo Andres,Farkhad G. Aliev###
(1040017, 1040017)
 We investigate the influence of an external magnetic field on the magnitudeand dephasing of the transient lateral photovoltaic effect (T-LPE) inlithographically patterned Co lines of widths of a few microns grown overnaturally passivated p<missing VAR>-type Si(100).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Magnetic state dependent transient lateral photovoltaic effect in patterned ferromagnetic metal-oxide-semiconductor films|Isidoro Martinez,Juan Pedro Cascales,Antonio Lara,Pablo Andres,Farkhad G. Aliev###
(1040057, 1040057)
 The T-LPE<missing VAR> peak-to-peak magnitude anddephasing, measured by lock-in or through the characteristic time of laser OFFexponential relaxation, exhibit a notable influence of the magnetizationdirection of the ferromagnetic overlayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OFF
###Magnetic state dependent transient lateral photovoltaic effect in patterned ferromagnetic metal-oxide-semiconductor films|Isidoro Martinez,Juan Pedro Cascales,Antonio Lara,Pablo Andres,Farkhad G. Aliev###
(1040096, 1040098)
 The T-LPE<missing VAR> peak-to-peak magnitude anddephasing, measured by lock-in or through the characteristic time of laser OFFexponential relaxation, exhibit a notable influence of the magnetizationdirection of the ferromagnetic overlayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Magnetic state dependent transient lateral photovoltaic effect in patterned ferromagnetic metal-oxide-semiconductor films|Isidoro Martinez,Juan Pedro Cascales,Antonio Lara,Pablo Andres,Farkhad G. Aliev###
(1040154, 1040154)
 We show experimentally and bynumerical simulations that the T-LPE<missing VAR> magnitude is determined by the Coanisotropic magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Magnetic state dependent transient lateral photovoltaic effect in patterned ferromagnetic metal-oxide-semiconductor films|Isidoro Martinez,Juan Pedro Cascales,Antonio Lara,Pablo Andres,Farkhad G. Aliev###
(1040167, 1040167)
 We show experimentally and bynumerical simulations that the T-LPE<missing VAR> magnitude is determined by the Coanisotropic magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Magnetic state dependent transient lateral photovoltaic effect in patterned ferromagnetic metal-oxide-semiconductor films|Isidoro Martinez,Juan Pedro Cascales,Antonio Lara,Pablo Andres,Farkhad G. Aliev###
(1040230, 1040230)
 On the other hand, the magnetic field dependenceof the dephasing could be described by the influence of the Lorentz forceacting perpendiculary to both the Co magnetization and the photocarrier driftdirections.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co/PbTiO3/Co
###Spin-dependent transport in a multiferroic tunnel junction: Theory for Co/PbTiO$_{3}$/Co|Vladislav S. Borisov,Sergey Ostanin,Steven Achilles,Jürgen Henk,Ingrid Mertig###
(1040644, 1040651)
Spin-dependent transport in a multiferroic tunnel junction Theory for Co/PbTiO3/Co.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Co/PbTiO3/Co
###Spin-dependent transport in a multiferroic tunnel junction: Theory for Co/PbTiO$_{3}$/Co|Vladislav S. Borisov,Sergey Ostanin,Steven Achilles,Jürgen Henk,Ingrid Mertig###
(1040666, 1040673)
 Spin-dependent electronic transport through multiferroic Co/PbTiO3/Cotunnel junctions is studied theoretically.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

B
###Spin-dependent transport in a multiferroic tunnel junction: Theory for Co/PbTiO$_{3}$/Co|Vladislav S. Borisov,Sergey Ostanin,Steven Achilles,Jürgen Henk,Ingrid Mertig###
(1040698, 1040698)
 Conductances calculated within theLandauer-Buttiker formalism yield both a large tunnel magnetoresistance (TMR)and a large tunnel electroresistance (TER).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin-dependent transport in a multiferroic tunnel junction: Theory for Co/PbTiO$_{3}$/Co|Vladislav S. Borisov,Sergey Ostanin,Steven Achilles,Jürgen Henk,Ingrid Mertig###
(1040792, 1040792)
 In particular, the spin polarization ofthe tunneling electronic states is affected by the hybridization of orbitalsand the associated charge transfer at both interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PbTiO3
###Spin-dependent transport in a multiferroic tunnel junction: Theory for Co/PbTiO$_{3}$/Co|Vladislav S. Borisov,Sergey Ostanin,Steven Achilles,Jürgen Henk,Ingrid Mertig###
(1040855, 1040858)
 Digital doping of thePbTiO3 barrier with Zr impurities at the TiO2/Co2 interfacesignificantly enhances the TMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Zr
###Spin-dependent transport in a multiferroic tunnel junction: Theory for Co/PbTiO$_{3}$/Co|Vladislav S. Borisov,Sergey Ostanin,Steven Achilles,Jürgen Henk,Ingrid Mertig###
(1040864, 1040864)
 Digital doping of thePbTiO3 barrier with Zr impurities at the TiO2/Co2 interfacesignificantly enhances the TMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TiO2/Co2
###Spin-dependent transport in a multiferroic tunnel junction: Theory for Co/PbTiO$_{3}$/Co|Vladislav S. Borisov,Sergey Ostanin,Steven Achilles,Jürgen Henk,Ingrid Mertig###
(1040872, 1040877)
 Digital doping of thePbTiO3 barrier with Zr impurities at the TiO2/Co2 interfacesignificantly enhances the TMR.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

In
###Spin-dependent transport in a multiferroic tunnel junction: Theory for Co/PbTiO$_{3}$/Co|Vladislav S. Borisov,Sergey Ostanin,Steven Achilles,Jürgen Henk,Ingrid Mertig###
(1040893, 1040893)
 In addition, it removes the metalization ofthe barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CaFeAsF
###Growth and Characterization of Millimeter-sized Single Crystals of CaFeAsF|Yonghui Ma,Hui Zhang,Bo Gao,Kangkang Hu,Qiucheng Ji,Gang Mu,Fuqiang Huang,Xiaoming Xie###
(1040940, 1040943)
Growth and Characterization of Millimeter-sized Single Crystals of CaFeAsF.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 1111, 'phase', 1],[229.0, 121, 'K', 5],[259.0, 110, 'K', 6],[319.0, 1111, 'phase', 7]

Fe
###Growth and Characterization of Millimeter-sized Single Crystals of CaFeAsF|Yonghui Ma,Hui Zhang,Bo Gao,Kangkang Hu,Qiucheng Ji,Gang Mu,Fuqiang Huang,Xiaoming Xie###
(1040996, 1040996)
 High-quality and sizable single crystals are crucial for studying theintrinsic properties of unconventional superconductors, which are lacking inthe 1111 phase of the Fe-based superconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 1111, 'phase', 0],[176.0, 121, 'K', 4],[206.0, 110, 'K', 5],[266.0, 1111, 'phase', 6]

CaFeAsF
###Growth and Characterization of Millimeter-sized Single Crystals of CaFeAsF|Yonghui Ma,Hui Zhang,Bo Gao,Kangkang Hu,Qiucheng Ji,Gang Mu,Fuqiang Huang,Xiaoming Xie###
(1041018, 1041021)
 Here we report the successfulgrowth of CaFeAsF single crystals with the sizes of 1-2 mm using the self-fluxmethod.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 1111, 'phase', 1],[151.0, 121, 'K', 3],[181.0, 110, 'K', 4],[241.0, 1111, 'phase', 5]

Fe
###Growth and Characterization of Millimeter-sized Single Crystals of CaFeAsF|Yonghui Ma,Hui Zhang,Bo Gao,Kangkang Hu,Qiucheng Ji,Gang Mu,Fuqiang Huang,Xiaoming Xie###
(1041269, 1041269)
 Ourresults supply a basis to propel the physical investigations on the 1111 phaseof the Fe-based superconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[279.0, 1111, 'phase', 6],[97.0, 121, 'K', 2],[67.0, 110, 'K', 1],[7.0, 1111, 'phase', 0]

Cu
###Direct Method for Calculating Temperature-Dependent Transport Properties|Yi Liu,Zhe Yuan,R. J. H. Wesselink,Anton A. Starikov,Mark van Schilfgaarde,Paul J. Kelly###
(1041379, 1041379)
 Excellent (good) agreement with experiment is found for theresistivity of Cu, Pd, Pt (and Fe) when lattice (and spin) disorder arecalculated from first principles.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pd
###Direct Method for Calculating Temperature-Dependent Transport Properties|Yi Liu,Zhe Yuan,R. J. H. Wesselink,Anton A. Starikov,Mark van Schilfgaarde,Paul J. Kelly###
(1041382, 1041382)
 Excellent (good) agreement with experiment is found for theresistivity of Cu, Pd, Pt (and Fe) when lattice (and spin) disorder arecalculated from first principles.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Direct Method for Calculating Temperature-Dependent Transport Properties|Yi Liu,Zhe Yuan,R. J. H. Wesselink,Anton A. Starikov,Mark van Schilfgaarde,Paul J. Kelly###
(1041385, 1041385)
 Excellent (good) agreement with experiment is found for theresistivity of Cu, Pd, Pt (and Fe) when lattice (and spin) disorder arecalculated from first principles.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Direct Method for Calculating Temperature-Dependent Transport Properties|Yi Liu,Zhe Yuan,R. J. H. Wesselink,Anton A. Starikov,Mark van Schilfgaarde,Paul J. Kelly###
(1041390, 1041390)
 Excellent (good) agreement with experiment is found for theresistivity of Cu, Pd, Pt (and Fe) when lattice (and spin) disorder arecalculated from first principles.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Direct Method for Calculating Temperature-Dependent Transport Properties|Yi Liu,Zhe Yuan,R. J. H. Wesselink,Anton A. Starikov,Mark van Schilfgaarde,Paul J. Kelly###
(1041419, 1041419)
 For Fe, the agreement with experiment islimited by how well the magnetization (of itinerant ferromagnets) can becalculated as a function of temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni80Fe20
###Direct Method for Calculating Temperature-Dependent Transport Properties|Yi Liu,Zhe Yuan,R. J. H. Wesselink,Anton A. Starikov,Mark van Schilfgaarde,Paul J. Kelly###
(1041540, 1041543)
 By introducing a simple Debye-likemodel of spin disorder parameterized to reproduce the experimentalmagnetization, the temperature dependence of the average resistivity, theanisotropic magnetoresistance and the spin polarization of a Ni80Fe20alloy are calculated and found to be in good agreement with existing data.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr3As3
###Tunable electronic anisotropy in single-crystal A2Cr3As3 (A = K, Rb) quasi-one-dimensional superconductors|X. F. Wang,C. Roncaioli,C. Eckberg,H. Kim,J. Yong,Y. Nakajima,S. R. Saha,P. Y. Zavalij,J. Paglione###
(1041652, 1041655)
Tunable electronic anisotropy in single-crystal A2Cr3As3 (A  K, Rb) quasi-one-dimensional superconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 6.1, 'K', 2],[114.0, 4.8, 'K', 2]

K
###Tunable electronic anisotropy in single-crystal A2Cr3As3 (A = K, Rb) quasi-one-dimensional superconductors|X. F. Wang,C. Roncaioli,C. Eckberg,H. Kim,J. Yong,Y. Nakajima,S. R. Saha,P. Y. Zavalij,J. Paglione###
(1041661, 1041661)
Tunable electronic anisotropy in single-crystal A2Cr3As3 (A  K, Rb) quasi-one-dimensional superconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 6.1, 'K', 2],[108.0, 4.8, 'K', 2]

Rb
###Tunable electronic anisotropy in single-crystal A2Cr3As3 (A = K, Rb) quasi-one-dimensional superconductors|X. F. Wang,C. Roncaioli,C. Eckberg,H. Kim,J. Yong,Y. Nakajima,S. R. Saha,P. Y. Zavalij,J. Paglione###
(1041664, 1041664)
Tunable electronic anisotropy in single-crystal A2Cr3As3 (A  K, Rb) quasi-one-dimensional superconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 6.1, 'K', 2],[105.0, 4.8, 'K', 2]

Cr3As3
###Tunable electronic anisotropy in single-crystal A2Cr3As3 (A = K, Rb) quasi-one-dimensional superconductors|X. F. Wang,C. Roncaioli,C. Eckberg,H. Kim,J. Yong,Y. Nakajima,S. R. Saha,P. Y. Zavalij,J. Paglione###
(1041684, 1041687)
 Single crystals of A2Cr3As3 (A  K, Rb) were successfully grown using aself-flux method and studied via structural, transport and thermodynamicmeasurement techniques.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 6.1, 'K', 1],[82.0, 4.8, 'K', 1]

K
###Tunable electronic anisotropy in single-crystal A2Cr3As3 (A = K, Rb) quasi-one-dimensional superconductors|X. F. Wang,C. Roncaioli,C. Eckberg,H. Kim,J. Yong,Y. Nakajima,S. R. Saha,P. Y. Zavalij,J. Paglione###
(1041693, 1041693)
 Single crystals of A2Cr3As3 (A  K, Rb) were successfully grown using aself-flux method and studied via structural, transport and thermodynamicmeasurement techniques.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 6.1, 'K', 1],[76.0, 4.8, 'K', 1]

Rb
###Tunable electronic anisotropy in single-crystal A2Cr3As3 (A = K, Rb) quasi-one-dimensional superconductors|X. F. Wang,C. Roncaioli,C. Eckberg,H. Kim,J. Yong,Y. Nakajima,S. R. Saha,P. Y. Zavalij,J. Paglione###
(1041696, 1041696)
 Single crystals of A2Cr3As3 (A  K, Rb) were successfully grown using aself-flux method and studied via structural, transport and thermodynamicmeasurement techniques.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 6.1, 'K', 1],[73.0, 4.8, 'K', 1]

K2Cr3As3
###Tunable electronic anisotropy in single-crystal A2Cr3As3 (A = K, Rb) quasi-one-dimensional superconductors|X. F. Wang,C. Roncaioli,C. Eckberg,H. Kim,J. Yong,Y. Nakajima,S. R. Saha,P. Y. Zavalij,J. Paglione###
(1041773, 1041778)
 The superconducting state properties between the twospecies are similar, with critical temperatures of 6.1 K and 4.8 K in K2Cr3As3and Rb2Cr3As3, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0.375,0,0,0,0,0,0,0,0,0.375,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 6.1, 'K', 0],[4.0, 4.8, 'K', 0]

Rb2Cr3As3
###Tunable electronic anisotropy in single-crystal A2Cr3As3 (A = K, Rb) quasi-one-dimensional superconductors|X. F. Wang,C. Roncaioli,C. Eckberg,H. Kim,J. Yong,Y. Nakajima,S. R. Saha,P. Y. Zavalij,J. Paglione###
(1041783, 1041788)
 The superconducting state properties between the twospecies are similar, with critical temperatures of 6.1 K and 4.8 K in K2Cr3As3and Rb2Cr3As3, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.375,0,0,0,0,0,0,0,0,0.375,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 6.1, 'K', 0],[14.0, 4.8, 'K', 0]

Rb2Cr3As3
###Tunable electronic anisotropy in single-crystal A2Cr3As3 (A = K, Rb) quasi-one-dimensional superconductors|X. F. Wang,C. Roncaioli,C. Eckberg,H. Kim,J. Yong,Y. Nakajima,S. R. Saha,P. Y. Zavalij,J. Paglione###
(1041818, 1041823)
 However, the emergence of a strong normal stateelectronic anisotropy in Rb2Cr3As3 suggests a unique electronic tuningparameter is coupled to the inter-chain spacing in the A2Cr3As3 structure,which increases with alkali metal ionic size while the one-dimensional[(Cr3As3)2-]infty chain structure itself remains essentially unchanged.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.375,0,0,0,0,0,0,0,0,0.375,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 6.1, 'K', 1],[49.0, 4.8, 'K', 1]

Cr3As3
###Tunable electronic anisotropy in single-crystal A2Cr3As3 (A = K, Rb) quasi-one-dimensional superconductors|X. F. Wang,C. Roncaioli,C. Eckberg,H. Kim,J. Yong,Y. Nakajima,S. R. Saha,P. Y. Zavalij,J. Paglione###
(1041858, 1041861)
 However, the emergence of a strong normal stateelectronic anisotropy in Rb2Cr3As3 suggests a unique electronic tuningparameter is coupled to the inter-chain spacing in the A2Cr3As3 structure,which increases with alkali metal ionic size while the one-dimensional[(Cr3As3)2-]infty chain structure itself remains essentially unchanged.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 6.1, 'K', 1],[89.0, 4.8, 'K', 1]

(Cr3As3)2
###Tunable electronic anisotropy in single-crystal A2Cr3As3 (A = K, Rb) quasi-one-dimensional superconductors|X. F. Wang,C. Roncaioli,C. Eckberg,H. Kim,J. Yong,Y. Nakajima,S. R. Saha,P. Y. Zavalij,J. Paglione###
(1041891, 1041897)
 However, the emergence of a strong normal stateelectronic anisotropy in Rb2Cr3As3 suggests a unique electronic tuningparameter is coupled to the inter-chain spacing in the A2Cr3As3 structure,which increases with alkali metal ionic size while the one-dimensional[(Cr3As3)2-]infty chain structure itself remains essentially unchanged.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 6.1, 'K', 1],[122.0, 4.8, 'K', 1]

Rb2Cr3As3
###Tunable electronic anisotropy in single-crystal A2Cr3As3 (A = K, Rb) quasi-one-dimensional superconductors|X. F. Wang,C. Roncaioli,C. Eckberg,H. Kim,J. Yong,Y. Nakajima,S. R. Saha,P. Y. Zavalij,J. Paglione###
(1041962, 1041967)
Together with dramatic enhancements in both conductivity and magnetoresistance(MR), the appearance of a strong anisotropy in the MR of Rb2Cr3As3 isconsistent with the proposed quasi-one-dimensional character of band structureand its evolution with alkali metal species in this new family ofsuperconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.375,0,0,0,0,0,0,0,0,0.375,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[196.0, 6.1, 'K', 2],[193.0, 4.8, 'K', 2]

Pt/YI
###Driving and detecting ferromagnetic resonance in insulators with the spin Hall effect|Joseph Sklenar,Wei Zhang,Matthias B. Jungfleisch,Wanjun Jiang,Houchen Chang,John E. Pearson,Mingzhong Wu,John B. Ketterson,Axel Hoffmann###
(1042081, 1042084)
 We demonstrate the generation and detection of spin-torque ferromagneticresonance in Pt/YIG<missing VAR> bilayers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

YI
###Driving and detecting ferromagnetic resonance in insulators with the spin Hall effect|Joseph Sklenar,Wei Zhang,Matthias B. Jungfleisch,Wanjun Jiang,Houchen Chang,John E. Pearson,Mingzhong Wu,John B. Ketterson,Axel Hoffmann###
(1042166, 1042167)
 When the YIG<missing VAR> undergoes resonance, a dc voltage is detectedlongitudinally along the Pt that can be described by two components.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Driving and detecting ferromagnetic resonance in insulators with the spin Hall effect|Joseph Sklenar,Wei Zhang,Matthias B. Jungfleisch,Wanjun Jiang,Houchen Chang,John E. Pearson,Mingzhong Wu,John B. Ketterson,Axel Hoffmann###
(1042192, 1042192)
 When the YIG<missing VAR> undergoes resonance, a dc voltage is detectedlongitudinally along the Pt that can be described by two components.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Driving and detecting ferromagnetic resonance in insulators with the spin Hall effect|Joseph Sklenar,Wei Zhang,Matthias B. Jungfleisch,Wanjun Jiang,Houchen Chang,John E. Pearson,Mingzhong Wu,John B. Ketterson,Axel Hoffmann###
(1042254, 1042254)
 The otherresults from spin pumping into the Pt being converted to a dc current throughthe inverse spin Hall effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Anisotropic magnetotransport of electron gases at SrTiO3 (111) and (110) surfaces with high mobility|Ludi Miao,Renzhong Du,Yuewei Yin,Qi Li###
(1042392, 1042395)
Anisotropic magnetotransport of electron gases at SrTiO3 (111) and (110) surfaces with high mobility.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 5500, 'cm', 1],[103.0, -1, ',', 1],[106.0, 1300, 'cm', 1],[333.0, 2, 'D', 4]

SrTiO3
###Anisotropic magnetotransport of electron gases at SrTiO3 (111) and (110) surfaces with high mobility|Ludi Miao,Renzhong Du,Yuewei Yin,Qi Li###
(1042446, 1042449)
 Electron gases at the surfaces of (001), (110), and (111) oriented SrTiO3(ST<missing VAR>O) have been created using Ar-irradiation with fully metallic behavior andlow-temperature-mobility as large as 5500 cm2V-1s<missing VAR>-1, 1300 cm2V-1s<missing VAR>-1 and 8600cm2V-1s<missing VAR>-1 for (001)-, (110)-, and (111)-surfaces, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 5500, 'cm', 0],[49.0, -1, ',', 0],[52.0, 1300, 'cm', 0],[279.0, 2, 'D', 3]

S
###Anisotropic magnetotransport of electron gases at SrTiO3 (111) and (110) surfaces with high mobility|Ludi Miao,Renzhong Du,Yuewei Yin,Qi Li###
(1042453, 1042453)
 Electron gases at the surfaces of (001), (110), and (111) oriented SrTiO3(ST<missing VAR>O) have been created using Ar-irradiation with fully metallic behavior andlow-temperature-mobility as large as 5500 cm2V-1s<missing VAR>-1, 1300 cm2V-1s<missing VAR>-1 and 8600cm2V-1s<missing VAR>-1 for (001)-, (110)-, and (111)-surfaces, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 5500, 'cm', 0],[45.0, -1, ',', 0],[48.0, 1300, 'cm', 0],[275.0, 2, 'D', 3]

O
###Anisotropic magnetotransport of electron gases at SrTiO3 (111) and (110) surfaces with high mobility|Ludi Miao,Renzhong Du,Yuewei Yin,Qi Li###
(1042455, 1042455)
 Electron gases at the surfaces of (001), (110), and (111) oriented SrTiO3(ST<missing VAR>O) have been created using Ar-irradiation with fully metallic behavior andlow-temperature-mobility as large as 5500 cm2V-1s<missing VAR>-1, 1300 cm2V-1s<missing VAR>-1 and 8600cm2V-1s<missing VAR>-1 for (001)-, (110)-, and (111)-surfaces, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 5500, 'cm', 0],[43.0, -1, ',', 0],[46.0, 1300, 'cm', 0],[273.0, 2, 'D', 3]

Ar
###Anisotropic magnetotransport of electron gases at SrTiO3 (111) and (110) surfaces with high mobility|Ludi Miao,Renzhong Du,Yuewei Yin,Qi Li###
(1042466, 1042466)
 Electron gases at the surfaces of (001), (110), and (111) oriented SrTiO3(ST<missing VAR>O) have been created using Ar-irradiation with fully metallic behavior andlow-temperature-mobility as large as 5500 cm2V-1s<missing VAR>-1, 1300 cm2V-1s<missing VAR>-1 and 8600cm2V-1s<missing VAR>-1 for (001)-, (110)-, and (111)-surfaces, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 5500, 'cm', 0],[32.0, -1, ',', 0],[35.0, 1300, 'cm', 0],[262.0, 2, 'D', 3]

V
###Anisotropic magnetotransport of electron gases at SrTiO3 (111) and (110) surfaces with high mobility|Ludi Miao,Renzhong Du,Yuewei Yin,Qi Li###
(1042494, 1042494)
 Electron gases at the surfaces of (001), (110), and (111) oriented SrTiO3(ST<missing VAR>O) have been created using Ar-irradiation with fully metallic behavior andlow-temperature-mobility as large as 5500 cm2V-1s<missing VAR>-1, 1300 cm2V-1s<missing VAR>-1 and 8600cm2V-1s<missing VAR>-1 for (001)-, (110)-, and (111)-surfaces, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 5500, 'cm', 0],[4.0, -1, ',', 0],[7.0, 1300, 'cm', 0],[234.0, 2, 'D', 3]

V
###Anisotropic magnetotransport of electron gases at SrTiO3 (111) and (110) surfaces with high mobility|Ludi Miao,Renzhong Du,Yuewei Yin,Qi Li###
(1042503, 1042503)
 Electron gases at the surfaces of (001), (110), and (111) oriented SrTiO3(ST<missing VAR>O) have been created using Ar-irradiation with fully metallic behavior andlow-temperature-mobility as large as 5500 cm2V-1s<missing VAR>-1, 1300 cm2V-1s<missing VAR>-1 and 8600cm2V-1s<missing VAR>-1 for (001)-, (110)-, and (111)-surfaces, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 5500, 'cm', 0],[5.0, -1, ',', 0],[2.0, 1300, 'cm', 0],[225.0, 2, 'D', 3]

V
###Anisotropic magnetotransport of electron gases at SrTiO3 (111) and (110) surfaces with high mobility|Ludi Miao,Renzhong Du,Yuewei Yin,Qi Li###
(1042517, 1042517)
 Electron gases at the surfaces of (001), (110), and (111) oriented SrTiO3(ST<missing VAR>O) have been created using Ar-irradiation with fully metallic behavior andlow-temperature-mobility as large as 5500 cm2V-1s<missing VAR>-1, 1300 cm2V-1s<missing VAR>-1 and 8600cm2V-1s<missing VAR>-1 for (001)-, (110)-, and (111)-surfaces, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 5500, 'cm', 0],[19.0, -1, ',', 0],[16.0, 1300, 'cm', 0],[211.0, 2, 'D', 3]

In
###Anisotropic magnetotransport of electron gases at SrTiO3 (111) and (110) surfaces with high mobility|Ludi Miao,Renzhong Du,Yuewei Yin,Qi Li###
(1042735, 1042735)
 In addition, a 6-fold to 2-foldsymmetry breaking for (111)-surfaces is observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[243.0, 5500, 'cm', 4],[237.0, -1, ',', 4],[234.0, 1300, 'cm', 4],[7.0, 2, 'D', 1]

S
###Anisotropic magnetotransport of electron gases at SrTiO3 (111) and (110) surfaces with high mobility|Ludi Miao,Renzhong Du,Yuewei Yin,Qi Li###
(1042814, 1042814)
 Our results demonstrate theeffect of symmetry of two-dimensional electronic structure on the transportbehaviors for the electron gases at ST<missing VAR>O surfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[322.0, 5500, 'cm', 5],[316.0, -1, ',', 5],[313.0, 1300, 'cm', 5],[86.0, 2, 'D', 2]

O
###Anisotropic magnetotransport of electron gases at SrTiO3 (111) and (110) surfaces with high mobility|Ludi Miao,Renzhong Du,Yuewei Yin,Qi Li###
(1042816, 1042816)
 Our results demonstrate theeffect of symmetry of two-dimensional electronic structure on the transportbehaviors for the electron gases at ST<missing VAR>O surfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[324.0, 5500, 'cm', 5],[318.0, -1, ',', 5],[315.0, 1300, 'cm', 5],[88.0, 2, 'D', 2]

Ba
###Large increase of the anisotropy factor in the overdoped region of Ba(Fe$_{1-x}$Ni$_x$)$_2$As$_2$ as probed by fluctuation spectroscopy|A Ramos-Álvarez,J Mosqueira,F Vidal,Xingye Lu,Huiqian Luo###
(1042851, 1042851)
Large increase of the anisotropy factor in the overdoped region of Ba(Fe1-xNix)2As2 as probed by fluctuation spectroscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 7, 'T', 2],[155.0, 3, 'D', 3]

Fe1-xNi
###Large increase of the anisotropy factor in the overdoped region of Ba(Fe$_{1-x}$Ni$_x$)$_2$As$_2$ as probed by fluctuation spectroscopy|A Ramos-Álvarez,J Mosqueira,F Vidal,Xingye Lu,Huiqian Luo###
(1042853, 1042857)
Large increase of the anisotropy factor in the overdoped region of Ba(Fe1-xNix)2As2 as probed by fluctuation spectroscopy.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[92.0, 7, 'T', 2],[149.0, 3, 'D', 3]

As2
###Large increase of the anisotropy factor in the overdoped region of Ba(Fe$_{1-x}$Ni$_x$)$_2$As$_2$ as probed by fluctuation spectroscopy|A Ramos-Álvarez,J Mosqueira,F Vidal,Xingye Lu,Huiqian Luo###
(1042861, 1042862)
Large increase of the anisotropy factor in the overdoped region of Ba(Fe1-xNix)2As2 as probed by fluctuation spectroscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 7, 'T', 2],[144.0, 3, 'D', 3]

Ba
###Large increase of the anisotropy factor in the overdoped region of Ba(Fe$_{1-x}$Ni$_x$)$_2$As$_2$ as probed by fluctuation spectroscopy|A Ramos-Álvarez,J Mosqueira,F Vidal,Xingye Lu,Huiqian Luo###
(1042908, 1042908)
 We study the diamagnetism induced by thermal fluctuations above thesuperconducting transition of the iron pnictide Ba(Fe1-xNix)2As2with different doping levels.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 7, 'T', 1],[98.0, 3, 'D', 2]

Fe1-xNi
###Large increase of the anisotropy factor in the overdoped region of Ba(Fe$_{1-x}$Ni$_x$)$_2$As$_2$ as probed by fluctuation spectroscopy|A Ramos-Álvarez,J Mosqueira,F Vidal,Xingye Lu,Huiqian Luo###
(1042910, 1042914)
 We study the diamagnetism induced by thermal fluctuations above thesuperconducting transition of the iron pnictide Ba(Fe1-xNix)2As2with different doping levels.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[35.0, 7, 'T', 1],[92.0, 3, 'D', 2]

As2
###Large increase of the anisotropy factor in the overdoped region of Ba(Fe$_{1-x}$Ni$_x$)$_2$As$_2$ as probed by fluctuation spectroscopy|A Ramos-Álvarez,J Mosqueira,F Vidal,Xingye Lu,Huiqian Luo###
(1042918, 1042919)
 We study the diamagnetism induced by thermal fluctuations above thesuperconducting transition of the iron pnictide Ba(Fe1-xNix)2As2with different doping levels.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 7, 'T', 1],[87.0, 3, 'D', 2]

WTe2
###Temperature induced Lifshitz transition in WTe2|Yun Wu,Na Hyun Jo,Masayuki Ochi,Lunan Huang,Daixiang Mou,Sergey L. Bud'ko,P. C. Canfield,Nandini Trivedi,Ryotaro Arita,Adam Kaminski###
(1043177, 1043179)
Temperature induced Lifshitz transition in WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[216.0, 40, 'K', 4]

VUV
###Temperature induced Lifshitz transition in WTe2|Yun Wu,Na Hyun Jo,Masayuki Ochi,Lunan Huang,Daixiang Mou,Sergey L. Bud'ko,P. C. Canfield,Nandini Trivedi,Ryotaro Arita,Adam Kaminski###
(1043196, 1043198)
 We use ultra-high resolution, tunable, VUV laser-based, angle-resolvedphotoemission spectroscopy (ARPES) and temperature and field dependentresistivity and thermoelectric power (TEP) measurements to study the electronicproperties of WTe2, a compound that manifests exceptionally large, temperaturedependent magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[197.0, 40, 'K', 3]

S
###Temperature induced Lifshitz transition in WTe2|Yun Wu,Na Hyun Jo,Masayuki Ochi,Lunan Huang,Daixiang Mou,Sergey L. Bud'ko,P. C. Canfield,Nandini Trivedi,Ryotaro Arita,Adam Kaminski###
(1043219, 1043219)
 We use ultra-high resolution, tunable, VUV laser-based, angle-resolvedphotoemission spectroscopy (ARPES) and temperature and field dependentresistivity and thermoelectric power (TEP) measurements to study the electronicproperties of WTe2, a compound that manifests exceptionally large, temperaturedependent magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[176.0, 40, 'K', 3]

P
###Temperature induced Lifshitz transition in WTe2|Yun Wu,Na Hyun Jo,Masayuki Ochi,Lunan Huang,Daixiang Mou,Sergey L. Bud'ko,P. C. Canfield,Nandini Trivedi,Ryotaro Arita,Adam Kaminski###
(1043244, 1043244)
 We use ultra-high resolution, tunable, VUV laser-based, angle-resolvedphotoemission spectroscopy (ARPES) and temperature and field dependentresistivity and thermoelectric power (TEP) measurements to study the electronicproperties of WTe2, a compound that manifests exceptionally large, temperaturedependent magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 40, 'K', 3]

WTe2
###Temperature induced Lifshitz transition in WTe2|Yun Wu,Na Hyun Jo,Masayuki Ochi,Lunan Huang,Daixiang Mou,Sergey L. Bud'ko,P. C. Canfield,Nandini Trivedi,Ryotaro Arita,Adam Kaminski###
(1043262, 1043264)
 We use ultra-high resolution, tunable, VUV laser-based, angle-resolvedphotoemission spectroscopy (ARPES) and temperature and field dependentresistivity and thermoelectric power (TEP) measurements to study the electronicproperties of WTe2, a compound that manifests exceptionally large, temperaturedependent magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 40, 'K', 3]

P
###Temperature induced Lifshitz transition in WTe2|Yun Wu,Na Hyun Jo,Masayuki Ochi,Lunan Huang,Daixiang Mou,Sergey L. Bud'ko,P. C. Canfield,Nandini Trivedi,Ryotaro Arita,Adam Kaminski###
(1043300, 1043300)
 The temperature dependence of the TEP shows achange of slope at T<missing VAR>175 K and the Kohler rule breaks down above 70-140 Krange.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 40, 'K', 2]

K
###Temperature induced Lifshitz transition in WTe2|Yun Wu,Na Hyun Jo,Masayuki Ochi,Lunan Huang,Daixiang Mou,Sergey L. Bud'ko,P. C. Canfield,Nandini Trivedi,Ryotaro Arita,Adam Kaminski###
(1043318, 1043318)
 The temperature dependence of the TEP shows achange of slope at T<missing VAR>175 K and the Kohler rule breaks down above 70-140 Krange.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 40, 'K', 2]

K
###Temperature induced Lifshitz transition in WTe2|Yun Wu,Na Hyun Jo,Masayuki Ochi,Lunan Huang,Daixiang Mou,Sergey L. Bud'ko,P. C. Canfield,Nandini Trivedi,Ryotaro Arita,Adam Kaminski###
(1043338, 1043338)
 The temperature dependence of the TEP shows achange of slope at T<missing VAR>175 K and the Kohler rule breaks down above 70-140 Krange.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 40, 'K', 2]

BaFe2As2
###Temperature induced Lifshitz transition in WTe2|Yun Wu,Na Hyun Jo,Masayuki Ochi,Lunan Huang,Daixiang Mou,Sergey L. Bud'ko,P. C. Canfield,Nandini Trivedi,Ryotaro Arita,Adam Kaminski###
(1043420, 1043424)
 Like BaFe2As2,WTe2 has clear and substantial changes in its Fermi surface driven by modestchanges in temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 40, 'K', 1]

WTe2
###Temperature induced Lifshitz transition in WTe2|Yun Wu,Na Hyun Jo,Masayuki Ochi,Lunan Huang,Daixiang Mou,Sergey L. Bud'ko,P. C. Canfield,Nandini Trivedi,Ryotaro Arita,Adam Kaminski###
(1043428, 1043430)
 Like BaFe2As2,WTe2 has clear and substantial changes in its Fermi surface driven by modestchanges in temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 40, 'K', 1]

In
###Temperature induced Lifshitz transition in WTe2|Yun Wu,Na Hyun Jo,Masayuki Ochi,Lunan Huang,Daixiang Mou,Sergey L. Bud'ko,P. C. Canfield,Nandini Trivedi,Ryotaro Arita,Adam Kaminski###
(1043464, 1043464)
 In WTe2, this leads to a rare example of temperatureinduced Lifshitz transition, associated with the complete disappearance of thehole pockets.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 40, 'K', 2]

WTe2
###Temperature induced Lifshitz transition in WTe2|Yun Wu,Na Hyun Jo,Masayuki Ochi,Lunan Huang,Daixiang Mou,Sergey L. Bud'ko,P. C. Canfield,Nandini Trivedi,Ryotaro Arita,Adam Kaminski###
(1043466, 1043468)
 In WTe2, this leads to a rare example of temperatureinduced Lifshitz transition, associated with the complete disappearance of thehole pockets.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 40, 'K', 2]

S
###Giant Magneto-Seebeck Effect in Spin Valves|X. M. Zhang,C. H. Wan,Z. H. Yuan,H. Wu,Q. T. Zhang,X. Zhang,B. S. Tao,C. Fang,X. F. Han###
(1043579, 1043579)
 Giant magneto-Seebeck (GMS) effect was observed in Co/Cu/Co and NiFe/Cu/Cospin valves.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, -9, '%', 1],[195.0, -11, '%', 3]

Co/Cu/Co
###Giant Magneto-Seebeck Effect in Spin Valves|X. M. Zhang,C. H. Wan,Z. H. Yuan,H. Wu,Q. T. Zhang,X. Zhang,B. S. Tao,C. Fang,X. F. Han###
(1043590, 1043594)
 Giant magneto-Seebeck (GMS) effect was observed in Co/Cu/Co and NiFe/Cu/Cospin valves.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[73.0, -9, '%', 1],[180.0, -11, '%', 3]

NiFe/Cu/Co
###Giant Magneto-Seebeck Effect in Spin Valves|X. M. Zhang,C. H. Wan,Z. H. Yuan,H. Wu,Q. T. Zhang,X. Zhang,B. S. Tao,C. Fang,X. F. Han###
(1043598, 1043603)
 Giant magneto-Seebeck (GMS) effect was observed in Co/Cu/Co and NiFe/Cu/Cospin valves.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[64.0, -9, '%', 1],[171.0, -11, '%', 3]

S
###Giant Magneto-Seebeck Effect in Spin Valves|X. M. Zhang,C. H. Wan,Z. H. Yuan,H. Wu,Q. T. Zhang,X. Zhang,B. S. Tao,C. Fang,X. F. Han###
(1043643, 1043643)
 Their Seebeck coefficients in parallel state was larger than thatin antiparallel state, and GMS ratio defined as (SAP-SP)/SP could reach -9% inour case.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, -9, '%', 0],[131.0, -11, '%', 2]

S
###Giant Magneto-Seebeck Effect in Spin Valves|X. M. Zhang,C. H. Wan,Z. H. Yuan,H. Wu,Q. T. Zhang,X. Zhang,B. S. Tao,C. Fang,X. F. Han###
(1043652, 1043652)
 Their Seebeck coefficients in parallel state was larger than thatin antiparallel state, and GMS ratio defined as (SAP-SP)/SP could reach -9% inour case.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, -9, '%', 0],[122.0, -11, '%', 2]

P
###Giant Magneto-Seebeck Effect in Spin Valves|X. M. Zhang,C. H. Wan,Z. H. Yuan,H. Wu,Q. T. Zhang,X. Zhang,B. S. Tao,C. Fang,X. F. Han###
(1043654, 1043654)
 Their Seebeck coefficients in parallel state was larger than thatin antiparallel state, and GMS ratio defined as (SAP-SP)/SP could reach -9% inour case.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, -9, '%', 0],[120.0, -11, '%', 2]

P
###Giant Magneto-Seebeck Effect in Spin Valves|X. M. Zhang,C. H. Wan,Z. H. Yuan,H. Wu,Q. T. Zhang,X. Zhang,B. S. Tao,C. Fang,X. F. Han###
(1043657, 1043657)
 Their Seebeck coefficients in parallel state was larger than thatin antiparallel state, and GMS ratio defined as (SAP-SP)/SP could reach -9% inour case.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, -9, '%', 0],[117.0, -11, '%', 2]

SP
###Giant Magneto-Seebeck Effect in Spin Valves|X. M. Zhang,C. H. Wan,Z. H. Yuan,H. Wu,Q. T. Zhang,X. Zhang,B. S. Tao,C. Fang,X. F. Han###
(1043660, 1043661)
 Their Seebeck coefficients in parallel state was larger than thatin antiparallel state, and GMS ratio defined as (SAP-SP)/SP could reach -9% inour case.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, -9, '%', 0],[113.0, -11, '%', 2]

S
###Giant Magneto-Seebeck Effect in Spin Valves|X. M. Zhang,C. H. Wan,Z. H. Yuan,H. Wu,Q. T. Zhang,X. Zhang,B. S. Tao,C. Fang,X. F. Han###
(1043683, 1043683)
 The GMS originated not only from trivial giant magnetoresistance butalso from spin current generated due to spin polarized thermoelectricconductivity in ferromagnetic materials and subsequent modulation of the spincurrent by spin configurations in spin valves.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, -9, '%', 1],[91.0, -11, '%', 1]

S
###Giant Magneto-Seebeck Effect in Spin Valves|X. M. Zhang,C. H. Wan,Z. H. Yuan,H. Wu,Q. T. Zhang,X. Zhang,B. S. Tao,C. Fang,X. F. Han###
(1043780, 1043780)
 Simple Mott two-channel modelreproduced a -11% GMS for the Co/Cu/Co spin valves, qualitatively consistentwith our observations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, -9, '%', 2],[6.0, -11, '%', 0]

Co/Cu/Co
###Giant Magneto-Seebeck Effect in Spin Valves|X. M. Zhang,C. H. Wan,Z. H. Yuan,H. Wu,Q. T. Zhang,X. Zhang,B. S. Tao,C. Fang,X. F. Han###
(1043786, 1043790)
 Simple Mott two-channel modelreproduced a -11% GMS for the Co/Cu/Co spin valves, qualitatively consistentwith our observations.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[119.0, -9, '%', 2],[12.0, -11, '%', 0]

S
###Giant Magneto-Seebeck Effect in Spin Valves|X. M. Zhang,C. H. Wan,Z. H. Yuan,H. Wu,Q. T. Zhang,X. Zhang,B. S. Tao,C. Fang,X. F. Han###
(1043813, 1043813)
 The GMS effect could be applied simultaneously sensingtemperature gradient and magnetic field and also be possibly applied todetermine spin polarization of thermoelectric conductivity and Seebeckcoefficient in ferromagnetic thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, -9, '%', 3],[39.0, -11, '%', 1]

As
###Multi-channel exchange-scattering spin polarimetry|Fuhao Ji,Tan Shi,Mao Ye,Weishi Wan,Zhen Liu,Jiajia Wang,Tao Xu,Shan Qiao###
(1044068, 1044068)
 As a demonstration, the fine spin structure of electronic statesin bismuth (111) is investigated, showing the strong Rashba type spin splittingbehavior in both bulk and surface states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 5, 'orders', 1]

WTe2
###Correlation of Crystal Quality and Extreme Magnetoresistance of WTe$_2$|Mazhar N. Ali,Leslie Schoop,Jun Xiong,Steven Flynn,Quinn Gibson,Max Hirschberger,N. P. Ong,R. J. Cava###
(1044187, 1044189)
Correlation of Crystal Quality and Extreme Magnetoresistance of WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 9, 'Tesla', 3],[107.0, 2, 'Kelvin', 3],[114.0, 1.75, 'million', 3],[171.0, 1250.0, 'The', 3],[238.0, 167, ',', 3],[248.0, 2, 'K', 3]

WTe2
###Correlation of Crystal Quality and Extreme Magnetoresistance of WTe$_2$|Mazhar N. Ali,Leslie Schoop,Jun Xiong,Steven Flynn,Quinn Gibson,Max Hirschberger,N. P. Ong,R. J. Cava###
(1044202, 1044204)
 High quality single crystals of WTe2 were grown using a Te flux followedby a cleaning step involving self-vapor transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 9, 'Tesla', 2],[92.0, 2, 'Kelvin', 2],[99.0, 1.75, 'million', 2],[156.0, 1250.0, 'The', 2],[223.0, 167, ',', 2],[233.0, 2, 'K', 2]

Te
###Correlation of Crystal Quality and Extreme Magnetoresistance of WTe$_2$|Mazhar N. Ali,Leslie Schoop,Jun Xiong,Steven Flynn,Quinn Gibson,Max Hirschberger,N. P. Ong,R. J. Cava###
(1044214, 1044214)
 High quality single crystals of WTe2 were grown using a Te flux followedby a cleaning step involving self-vapor transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 9, 'Tesla', 2],[82.0, 2, 'Kelvin', 2],[89.0, 1.75, 'million', 2],[146.0, 1250.0, 'The', 2],[213.0, 167, ',', 2],[223.0, 2, 'K', 2]

B2
###Correlation of Crystal Quality and Extreme Magnetoresistance of WTe$_2$|Mazhar N. Ali,Leslie Schoop,Jun Xiong,Steven Flynn,Quinn Gibson,Max Hirschberger,N. P. Ong,R. J. Cava###
(1044372, 1044373)
 Magnetoresistance(MR)values at 9 Tesla and 2 Kelvin as high as 1.75 million %, nearly an orderof magnitude higher than previously reported for this material, were obtainedon crystals with residual resistivity ratio (RRR) of approximately 1250. The MRfollows a near B2 law (B  1.95(1)) and, assuming a semiclassical model, theaverage carrier mobility for the highest quality crystal was found to be167,000 cm2/Vs at 2 K.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 9, 'Tesla', 0],[76.0, 2, 'Kelvin', 0],[69.0, 1.75, 'million', 0],[12.0, 1250.0, 'The', 0],[54.0, 167, ',', 0],[64.0, 2, 'K', 0]

B
###Correlation of Crystal Quality and Extreme Magnetoresistance of WTe$_2$|Mazhar N. Ali,Leslie Schoop,Jun Xiong,Steven Flynn,Quinn Gibson,Max Hirschberger,N. P. Ong,R. J. Cava###
(1044378, 1044378)
 Magnetoresistance(MR)values at 9 Tesla and 2 Kelvin as high as 1.75 million %, nearly an orderof magnitude higher than previously reported for this material, were obtainedon crystals with residual resistivity ratio (RRR) of approximately 1250. The MRfollows a near B2 law (B  1.95(1)) and, assuming a semiclassical model, theaverage carrier mobility for the highest quality crystal was found to be167,000 cm2/Vs at 2 K.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 9, 'Tesla', 0],[82.0, 2, 'Kelvin', 0],[75.0, 1.75, 'million', 0],[18.0, 1250.0, 'The', 0],[49.0, 167, ',', 0],[59.0, 2, 'K', 0]

Fe2VAl1-xSi
###Magnetization and magneto-transport studies on Fe$_2$VAl$_{1-x}$Si$_x$|E. P. Amaladass,A. T. Satya,Shilpam Sharma,K. Vinod,V. Srinivas,C. S. Sundar,A. Bharathi###
(1044834, 1044841)
Magnetization and magneto-transport studies on Fe2VAl1-xSix<missing VAR>.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[41.0, 0.005, ',', 1],[44.0, 0.015, ',', 1],[185.0, 60, 'K', 4],[307.0, 60, 'K', 6]

Fe2VAl1-x
###Magnetization and magneto-transport studies on Fe$_2$VAl$_{1-x}$Si$_x$|E. P. Amaladass,A. T. Satya,Shilpam Sharma,K. Vinod,V. Srinivas,C. S. Sundar,A. Bharathi###
(1044865, 1044871)
 We report on magnetoresistance, Hall and magnetization measurements ofFe2VAl1-xSix Heusler compounds for x<missing VAR> 0.005, 0.015, 0.02.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[11.0, 0.005, ',', 0],[14.0, 0.015, ',', 0],[155.0, 60, 'K', 3],[277.0, 60, 'K', 5]

Si
###Magnetization and magneto-transport studies on Fe$_2$VAl$_{1-x}$Si$_x$|E. P. Amaladass,A. T. Satya,Shilpam Sharma,K. Vinod,V. Srinivas,C. S. Sundar,A. Bharathi###
(1044933, 1044933)
 There is a systematicchange in the temperature coefficient of resistance (TCR) from negative topositive as the Si composition is increased.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 0.005, ',', 1],[48.0, 0.015, ',', 1],[93.0, 60, 'K', 2],[215.0, 60, 'K', 4]

Si
###Magnetization and magneto-transport studies on Fe$_2$VAl$_{1-x}$Si$_x$|E. P. Amaladass,A. T. Satya,Shilpam Sharma,K. Vinod,V. Srinivas,C. S. Sundar,A. Bharathi###
(1044977, 1044977)
 The Hall co-efficient shows thatthe carriers are electron like and the carrier density increases with Siconcentration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 0.005, ',', 2],[92.0, 0.015, ',', 2],[49.0, 60, 'K', 1],[171.0, 60, 'K', 3]

SP
###Magnetization and magneto-transport studies on Fe$_2$VAl$_{1-x}$Si$_x$|E. P. Amaladass,A. T. Satya,Shilpam Sharma,K. Vinod,V. Srinivas,C. S. Sundar,A. Bharathi###
(1045095, 1045096)
Temperature and field dependent magnetization measurements did not show anysignificant change apart from the fact that the presence of super paramagnetic(SPM) cluster and its ordering at low temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[213.0, 0.005, ',', 4],[210.0, 0.015, ',', 4],[69.0, 60, 'K', 1],[52.0, 60, 'K', 1]

In
###Ferromagnetic resonance and magnetoresistive measurements evidencing magnetic vortex crystal in nickel thin film with patterned antidot array|I. R. B. Ribeiro,J. F. Felix,L. C. Figueiredo,P. C. de Morais,S. O. Ferreira,W. A. Moura-Melo,A. R. Pereira,A. Quindeau,C. I. L. de Araujo###
(1045285, 1045285)
 In this study weshow that by using one step nanolithography method, we are able to createferromagnetic vortex lattices in thin nickel films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Transport signatures of surface potentials on three-dimensional topological insulators|Sthitadhi Roy,Sourin Das###
(1045505, 1045505)
 The spin-momentum locked nature of the robust surface states of threedimensional topological insulators (3D TI) make them promising candidates forspintronics applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 3, 'D', 1],[180.0, 3, 'D', 4]

I
###Transport signatures of surface potentials on three-dimensional topological insulators|Sthitadhi Roy,Sourin Das###
(1045555, 1045555)
 Surface potentials which respect time reversalsymmetry can exist at the surface between a 3D T<missing VAR>I and the trivial vacuum.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 3, 'D', 0],[130.0, 3, 'D', 3]

In
###Transport signatures of surface potentials on three-dimensional topological insulators|Sthitadhi Roy,Sourin Das###
(1045601, 1045601)
 In this work, the effect of all such surface potentialson the spin textures is studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 3, 'D', 2],[84.0, 3, 'D', 1]

I
###Transport signatures of surface potentials on three-dimensional topological insulators|Sthitadhi Roy,Sourin Das###
(1045688, 1045688)
 Since, a tunnel magnetoresistance signalcarries the information of the spin texture, it is proposed that spin-polarizedtunneling of electrons to a 3D T<missing VAR>I surface can be used to uniquely identify thesurface potentials and quantitatively characterize them.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 3, 'D', 3],[3.0, 3, 'D', 0]

La2-xSr
###Effective 2D thickness for the Berezinskii-Kosterlitz-Thouless-like transition in a highly underdoped La$_{2-x}$Sr$_x$CuO$_4$|P. G. Baity,Xiaoyan Shi,Zhenzhong Shi,L. Benfatto,Dragana Popović###
(1045755, 1045759)
Effective 2D thickness for the Berezinskii-Kosterlitz-Thouless-like transition in a highly underdoped La2-xSrx<missing VAR>CuO4.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[26.0, 2, 'D', 0]

CuO4
###Effective 2D thickness for the Berezinskii-Kosterlitz-Thouless-like transition in a highly underdoped La$_{2-x}$Sr$_x$CuO$_4$|P. G. Baity,Xiaoyan Shi,Zhenzhong Shi,L. Benfatto,Dragana Popović###
(1045761, 1045763)
Effective 2D thickness for the Berezinskii-Kosterlitz-Thouless-like transition in a highly underdoped La2-xSrx<missing VAR>CuO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 2, 'D', 0]

La2-xSr
###Effective 2D thickness for the Berezinskii-Kosterlitz-Thouless-like transition in a highly underdoped La$_{2-x}$Sr$_x$CuO$_4$|P. G. Baity,Xiaoyan Shi,Zhenzhong Shi,L. Benfatto,Dragana Popović###
(1045791, 1045795)
 The nature of the superconducting transition in highly underdoped thick filmsof La2-xSrx<missing VAR>CuO4 (x<missing VAR>0.07 and 0.08) has been investigated using thein-plane transport measurements.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[62.0, 2, 'D', 1]

CuO4
###Effective 2D thickness for the Berezinskii-Kosterlitz-Thouless-like transition in a highly underdoped La$_{2-x}$Sr$_x$CuO$_4$|P. G. Baity,Xiaoyan Shi,Zhenzhong Shi,L. Benfatto,Dragana Popović###
(1045797, 1045799)
 The nature of the superconducting transition in highly underdoped thick filmsof La2-xSrx<missing VAR>CuO4 (x<missing VAR>0.07 and 0.08) has been investigated using thein-plane transport measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 2, 'D', 1]

CuO2
###Effective 2D thickness for the Berezinskii-Kosterlitz-Thouless-like transition in a highly underdoped La$_{2-x}$Sr$_x$CuO$_4$|P. G. Baity,Xiaoyan Shi,Zhenzhong Shi,L. Benfatto,Dragana Popović###
(1045887, 1045889)
 The contribution of superconductingfluctuations to the conductivity in zero magnetic field, or paraconductivity,was determined from the magnetoresistance measured in fields appliedperpendicular to the CuO2 planes.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 2, 'D', 2]

I
###Effective 2D thickness for the Berezinskii-Kosterlitz-Thouless-like transition in a highly underdoped La$_{2-x}$Sr$_x$CuO$_4$|P. G. Baity,Xiaoyan Shi,Zhenzhong Shi,L. Benfatto,Dragana Popović###
(1045926, 1045926)
 Both the temperature dependence of theparaconductivity above the transition and the nonlinear current-voltage (I-V)characteristics measured across it, exhibit the main signatures of theBerezinskii-Kosterlitz-Thouless (BKT) transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[197.0, 2, 'D', 3]

V
###Effective 2D thickness for the Berezinskii-Kosterlitz-Thouless-like transition in a highly underdoped La$_{2-x}$Sr$_x$CuO$_4$|P. G. Baity,Xiaoyan Shi,Zhenzhong Shi,L. Benfatto,Dragana Popović###
(1045928, 1045928)
 Both the temperature dependence of theparaconductivity above the transition and the nonlinear current-voltage (I-V)characteristics measured across it, exhibit the main signatures of theBerezinskii-Kosterlitz-Thouless (BKT) transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[199.0, 2, 'D', 3]

BK
###Effective 2D thickness for the Berezinskii-Kosterlitz-Thouless-like transition in a highly underdoped La$_{2-x}$Sr$_x$CuO$_4$|P. G. Baity,Xiaoyan Shi,Zhenzhong Shi,L. Benfatto,Dragana Popović###
(1045961, 1045962)
 Both the temperature dependence of theparaconductivity above the transition and the nonlinear current-voltage (I-V)characteristics measured across it, exhibit the main signatures of theBerezinskii-Kosterlitz-Thouless (BKT) transition.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[232.0, 2, 'D', 3]

I
###Effective 2D thickness for the Berezinskii-Kosterlitz-Thouless-like transition in a highly underdoped La$_{2-x}$Sr$_x$CuO$_4$|P. G. Baity,Xiaoyan Shi,Zhenzhong Shi,L. Benfatto,Dragana Popović###
(1045991, 1045991)
 The quantitative comparisonof the superfluid stiffness, extracted from the I-V data, with therenormalization-group results for the BKT<missing VAR> theory, reveals a large value of thevortex-core energy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[262.0, 2, 'D', 4]

V
###Effective 2D thickness for the Berezinskii-Kosterlitz-Thouless-like transition in a highly underdoped La$_{2-x}$Sr$_x$CuO$_4$|P. G. Baity,Xiaoyan Shi,Zhenzhong Shi,L. Benfatto,Dragana Popović###
(1045993, 1045993)
 The quantitative comparisonof the superfluid stiffness, extracted from the I-V data, with therenormalization-group results for the BKT<missing VAR> theory, reveals a large value of thevortex-core energy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[264.0, 2, 'D', 4]

BK
###Effective 2D thickness for the Berezinskii-Kosterlitz-Thouless-like transition in a highly underdoped La$_{2-x}$Sr$_x$CuO$_4$|P. G. Baity,Xiaoyan Shi,Zhenzhong Shi,L. Benfatto,Dragana Popović###
(1046013, 1046014)
 The quantitative comparisonof the superfluid stiffness, extracted from the I-V data, with therenormalization-group results for the BKT<missing VAR> theory, reveals a large value of thevortex-core energy.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[284.0, 2, 'D', 4]

BK
###Effective 2D thickness for the Berezinskii-Kosterlitz-Thouless-like transition in a highly underdoped La$_{2-x}$Sr$_x$CuO$_4$|P. G. Baity,Xiaoyan Shi,Zhenzhong Shi,L. Benfatto,Dragana Popović###
(1046093, 1046094)
 The results strongly suggestthat the characteristic energy scale controlling the BKT<missing VAR> behavior in thislayered system corresponds to the superfluid stiffness of a few layers.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[364.0, 2, 'D', 6]

FeSe
###Observation of Ising spin-nematic order and its close relationship to the superconductivity in FeSe single crystals|Yuan Dongna,Yuan Jie,Huang Yulong,Ni Shunli,Feng Zhongpei,Zhou Huaxue,Mao Yiyuan,Jin Kui,Zhang Guangming,Dong Xiaoli,Zhou Fang,Zhao Zhongxian###
(1046163, 1046164)
Observation of Ising spin-nematic order and its close relationship to the superconductivity in FeSe single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeSe
###Observation of Ising spin-nematic order and its close relationship to the superconductivity in FeSe single crystals|Yuan Dongna,Yuan Jie,Huang Yulong,Ni Shunli,Feng Zhongpei,Zhou Huaxue,Mao Yiyuan,Jin Kui,Zhang Guangming,Dong Xiaoli,Zhou Fang,Zhao Zhongxian###
(1046173, 1046174)
 Superconducting FeSe single crystals of (001) orientation are synthesized viaa hydrothermal ion-release route.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###Observation of Ising spin-nematic order and its close relationship to the superconductivity in FeSe single crystals|Yuan Dongna,Yuan Jie,Huang Yulong,Ni Shunli,Feng Zhongpei,Zhou Huaxue,Mao Yiyuan,Jin Kui,Zhang Guangming,Dong Xiaoli,Zhou Fang,Zhao Zhongxian###
(1046384, 1046384)
Remarkably, we find a universal linear relationship between Tc and Tsn amongvarious superconducting samples, indicating that the spin nematicity and thesuperconductivity in FeSe have a common microscopic origin.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeSe
###Observation of Ising spin-nematic order and its close relationship to the superconductivity in FeSe single crystals|Yuan Dongna,Yuan Jie,Huang Yulong,Ni Shunli,Feng Zhongpei,Zhou Huaxue,Mao Yiyuan,Jin Kui,Zhang Guangming,Dong Xiaoli,Zhou Fang,Zhao Zhongxian###
(1046419, 1046420)
Remarkably, we find a universal linear relationship between Tc and Tsn amongvarious superconducting samples, indicating that the spin nematicity and thesuperconductivity in FeSe have a common microscopic origin.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SnTe
###Thin film growth of a topological crystal insulator SnTe on the CdTe (111) surface by molecular beam epitaxy|Ryo Ishikawa,Tomonari Yamaguchi,Yusuke Ohtaki,Ryota Akiyama,Shinji Kuroda###
(1046457, 1046458)
Thin film growth of a topological crystal insulator SnTe on the CdTe (111) surface by molecular beam epitaxy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[271.0, 4, 'K', 3]

CdTe
###Thin film growth of a topological crystal insulator SnTe on the CdTe (111) surface by molecular beam epitaxy|Ryo Ishikawa,Tomonari Yamaguchi,Yusuke Ohtaki,Ryota Akiyama,Shinji Kuroda###
(1046464, 1046465)
Thin film growth of a topological crystal insulator SnTe on the CdTe (111) surface by molecular beam epitaxy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[264.0, 4, 'K', 3]

SnTe
###Thin film growth of a topological crystal insulator SnTe on the CdTe (111) surface by molecular beam epitaxy|Ryo Ishikawa,Tomonari Yamaguchi,Yusuke Ohtaki,Ryota Akiyama,Shinji Kuroda###
(1046498, 1046499)
 We report molecular beam epitaxial growth of a SnTe (111) layer on a CdTetemplate, fabricated by depositing it on a GaAs (111)A substrate, instead ofBaF2 which has been conventionally used as a substrate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[230.0, 4, 'K', 2]

CdTe
###Thin film growth of a topological crystal insulator SnTe on the CdTe (111) surface by molecular beam epitaxy|Ryo Ishikawa,Tomonari Yamaguchi,Yusuke Ohtaki,Ryota Akiyama,Shinji Kuroda###
(1046511, 1046512)
 We report molecular beam epitaxial growth of a SnTe (111) layer on a CdTetemplate, fabricated by depositing it on a GaAs (111)A substrate, instead ofBaF2 which has been conventionally used as a substrate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[217.0, 4, 'K', 2]

GaAs
###Thin film growth of a topological crystal insulator SnTe on the CdTe (111) surface by molecular beam epitaxy|Ryo Ishikawa,Tomonari Yamaguchi,Yusuke Ohtaki,Ryota Akiyama,Shinji Kuroda###
(1046530, 1046531)
 We report molecular beam epitaxial growth of a SnTe (111) layer on a CdTetemplate, fabricated by depositing it on a GaAs (111)A substrate, instead ofBaF2 which has been conventionally used as a substrate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[198.0, 4, 'K', 2]

BaF2
###Thin film growth of a topological crystal insulator SnTe on the CdTe (111) surface by molecular beam epitaxy|Ryo Ishikawa,Tomonari Yamaguchi,Yusuke Ohtaki,Ryota Akiyama,Shinji Kuroda###
(1046546, 1046548)
 We report molecular beam epitaxial growth of a SnTe (111) layer on a CdTetemplate, fabricated by depositing it on a GaAs (111)A substrate, instead ofBaF2 which has been conventionally used as a substrate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 4, 'K', 2]

SnTe
###Thin film growth of a topological crystal insulator SnTe on the CdTe (111) surface by molecular beam epitaxy|Ryo Ishikawa,Tomonari Yamaguchi,Yusuke Ohtaki,Ryota Akiyama,Shinji Kuroda###
(1046584, 1046585)
 By optimizingtemperatures for the growth of both SnTe and CdTe layers, we could obtain SnTelayers of the single phase grown only in the (111) orientation and of muchimproved surface morphology from the viewpoint of the extension and theflatness of flat regions, compared to the layers grown on BaF2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 4, 'K', 1]

CdTe
###Thin film growth of a topological crystal insulator SnTe on the CdTe (111) surface by molecular beam epitaxy|Ryo Ishikawa,Tomonari Yamaguchi,Yusuke Ohtaki,Ryota Akiyama,Shinji Kuroda###
(1046589, 1046590)
 By optimizingtemperatures for the growth of both SnTe and CdTe layers, we could obtain SnTelayers of the single phase grown only in the (111) orientation and of muchimproved surface morphology from the viewpoint of the extension and theflatness of flat regions, compared to the layers grown on BaF2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 4, 'K', 1]

SnTe
###Thin film growth of a topological crystal insulator SnTe on the CdTe (111) surface by molecular beam epitaxy|Ryo Ishikawa,Tomonari Yamaguchi,Yusuke Ohtaki,Ryota Akiyama,Shinji Kuroda###
(1046601, 1046602)
 By optimizingtemperatures for the growth of both SnTe and CdTe layers, we could obtain SnTelayers of the single phase grown only in the (111) orientation and of muchimproved surface morphology from the viewpoint of the extension and theflatness of flat regions, compared to the layers grown on BaF2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 4, 'K', 1]

BaF2
###Thin film growth of a topological crystal insulator SnTe on the CdTe (111) surface by molecular beam epitaxy|Ryo Ishikawa,Tomonari Yamaguchi,Yusuke Ohtaki,Ryota Akiyama,Shinji Kuroda###
(1046680, 1046682)
 By optimizingtemperatures for the growth of both SnTe and CdTe layers, we could obtain SnTelayers of the single phase grown only in the (111) orientation and of muchimproved surface morphology from the viewpoint of the extension and theflatness of flat regions, compared to the layers grown on BaF2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 4, 'K', 1]

In
###Thin film growth of a topological crystal insulator SnTe on the CdTe (111) surface by molecular beam epitaxy|Ryo Ishikawa,Tomonari Yamaguchi,Yusuke Ohtaki,Ryota Akiyama,Shinji Kuroda###
(1046685, 1046685)
 In thisoptimal growth condition, we have also achieved a low hole density of the orderof 1017cm-3 at 4K, the lowest value ever reported for SnTe thin filmswithout additional doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 4, 'K', 0]

SnTe
###Thin film growth of a topological crystal insulator SnTe on the CdTe (111) surface by molecular beam epitaxy|Ryo Ishikawa,Tomonari Yamaguchi,Yusuke Ohtaki,Ryota Akiyama,Shinji Kuroda###
(1046744, 1046745)
 In thisoptimal growth condition, we have also achieved a low hole density of the orderof 1017cm-3 at 4K, the lowest value ever reported for SnTe thin filmswithout additional doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 4, 'K', 0]

In
###Thin film growth of a topological crystal insulator SnTe on the CdTe (111) surface by molecular beam epitaxy|Ryo Ishikawa,Tomonari Yamaguchi,Yusuke Ohtaki,Ryota Akiyama,Shinji Kuroda###
(1046759, 1046759)
 In the magnetoresistance measurement on thisoptimized SnTe layer, we observe characteristic negative magneto-conductancewhich is attributed to the weak antilocalization effect of the two-dimensionaltransport in the topological surface state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 4, 'K', 1]

SnTe
###Thin film growth of a topological crystal insulator SnTe on the CdTe (111) surface by molecular beam epitaxy|Ryo Ishikawa,Tomonari Yamaguchi,Yusuke Ohtaki,Ryota Akiyama,Shinji Kuroda###
(1046774, 1046775)
 In the magnetoresistance measurement on thisoptimized SnTe layer, we observe characteristic negative magneto-conductancewhich is attributed to the weak antilocalization effect of the two-dimensionaltransport in the topological surface state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 4, 'K', 1]

(Fe20Ni80)
###Magnetic Domain Wall Engineering in a Nanoscale Permalloy Junction|Junlin Wang,Xichao Zhang,Xianyang Lu,Jason Zhang,Hua Ling,Jing Wu,Yan Zhou,Yongbing Xu###
(1047310, 1047315)
 Here, we study thedomain structure and the magnetic switching in the Permalloy (Fe20Ni80)nanoscale magnetic junctions with different thicknesses by using micromagneticsimulations.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 7, 'nm', 2],[119.0, 22, 'nm', 2]

LaBi
###Multiple Dirac cones at the surface of the topological metal LaBi|Jayita Nayak,Shu-Chun Wu,Nitesh Kumar,Chandra Shekhar,Sanjay Singh,Jörg Fink,Emile E. D. Rienks,Gerhard H. Fecher,Stuart S. P. Parkin,Binghai Yan,Claudia Felser###
(1047507, 1047508)
Multiple Dirac cones at the surface of the topological metal LaBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaBi
###Multiple Dirac cones at the surface of the topological metal LaBi|Jayita Nayak,Shu-Chun Wu,Nitesh Kumar,Chandra Shekhar,Sanjay Singh,Jörg Fink,Emile E. D. Rienks,Gerhard H. Fecher,Stuart S. P. Parkin,Binghai Yan,Claudia Felser###
(1047519, 1047520)
 The rare-earth monopnictide LaBi exhibits exotic magneto-transport propertiesincluding an extremely large and anisotropic magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaBi
###Multiple Dirac cones at the surface of the topological metal LaBi|Jayita Nayak,Shu-Chun Wu,Nitesh Kumar,Chandra Shekhar,Sanjay Singh,Jörg Fink,Emile E. D. Rienks,Gerhard H. Fecher,Stuart S. P. Parkin,Binghai Yan,Claudia Felser###
(1047592, 1047593)
 Experimentalevidence for topological surface states is still missing although bandinversions have been postulated to induce a topological phase in LaBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Multiple Dirac cones at the surface of the topological metal LaBi|Jayita Nayak,Shu-Chun Wu,Nitesh Kumar,Chandra Shekhar,Sanjay Singh,Jörg Fink,Emile E. D. Rienks,Gerhard H. Fecher,Stuart S. P. Parkin,Binghai Yan,Claudia Felser###
(1047614, 1047614)
 Byemploying angle-resolved photoemission spectroscopy (ARPES) in conjunction withabinitio calculations, we have revealed the existence of surface states ofLaBi through the observation of three Dirac cones two coexist at the cornersand one appears at the center of the Brillouin zone.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaBi
###Multiple Dirac cones at the surface of the topological metal LaBi|Jayita Nayak,Shu-Chun Wu,Nitesh Kumar,Chandra Shekhar,Sanjay Singh,Jörg Fink,Emile E. D. Rienks,Gerhard H. Fecher,Stuart S. P. Parkin,Binghai Yan,Claudia Felser###
(1047649, 1047650)
 Byemploying angle-resolved photoemission spectroscopy (ARPES) in conjunction withabinitio calculations, we have revealed the existence of surface states ofLaBi through the observation of three Dirac cones two coexist at the cornersand one appears at the center of the Brillouin zone.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaBi
###Multiple Dirac cones at the surface of the topological metal LaBi|Jayita Nayak,Shu-Chun Wu,Nitesh Kumar,Chandra Shekhar,Sanjay Singh,Jörg Fink,Emile E. D. Rienks,Gerhard H. Fecher,Stuart S. P. Parkin,Binghai Yan,Claudia Felser###
(1047753, 1047754)
 The odd number of surfaceDirac cones is a direct consequence of the odd number of band inversions in thebulk band structure, thereby proving that LaBi is a topological, compensatedsemi-metal, which is equivalent to a time-reversal invariant topologicalinsulator.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaBi
###Multiple Dirac cones at the surface of the topological metal LaBi|Jayita Nayak,Shu-Chun Wu,Nitesh Kumar,Chandra Shekhar,Sanjay Singh,Jörg Fink,Emile E. D. Rienks,Gerhard H. Fecher,Stuart S. P. Parkin,Binghai Yan,Claudia Felser###
(1047814, 1047815)
 Our findings provide insight into the topological surface states ofLaBis<missing VAR> semi-metallicity and related magneto-transport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoTe2
###Hall-effect within the colossal magnetoresistive semi-metallic state of MoTe2|Qiong Zhou,D. Rhodes,Q. R. Zhang,S. Tang,R. Schönemann,L. Balicas###
(1047861, 1047863)
Hall-effect within the colossal magnetoresistive semi-metallic state of MoTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoTe2
###Hall-effect within the colossal magnetoresistive semi-metallic state of MoTe2|Qiong Zhou,D. Rhodes,Q. R. Zhang,S. Tang,R. Schönemann,L. Balicas###
(1047902, 1047904)
 Here, we report a systematic study on the Hall-effect of the semi-metallicstate of bulk MoTe2, which was recently claimed to be a candidate for anovel type of Weyl semi-metallic state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Hall-effect within the colossal magnetoresistive semi-metallic state of MoTe2|Qiong Zhou,D. Rhodes,Q. R. Zhang,S. Tang,R. Schönemann,L. Balicas###
(1048097, 1048097)
 A sudden increase in hole density, with a concomitant rapidincrease in the electron mobility below T<missing VAR> sim 40 K, leads to comparabledensities of electrons and holes at low temperatures suggesting a possibleelectronic phase-transition around this temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Lorentz-violating type-II Dirac fermions in transition metal dichalcogenide PtTe$_2$|Mingzhe Yan,Huaqing Huang,Kenan Zhang,Eryin Wang,Wei Yao,Ke Deng,Guoliang Wan,Hongyun Zhang,Masashi Arita,Haitao Yang,Zhe Sun,Hong Yao,Yang Wu,Shoushan Fan,Wenhui Duan,Shuyun Zhou###
(1048157, 1048158)
Lorentz-violating type-II Dirac fermions in transition metal dichalcogenide PtTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PtTe2
###Lorentz-violating type-II Dirac fermions in transition metal dichalcogenide PtTe$_2$|Mingzhe Yan,Huaqing Huang,Kenan Zhang,Eryin Wang,Wei Yao,Ke Deng,Guoliang Wan,Hongyun Zhang,Masashi Arita,Haitao Yang,Zhe Sun,Hong Yao,Yang Wu,Shoushan Fan,Wenhui Duan,Shuyun Zhou###
(1048172, 1048174)
Lorentz-violating type-II Dirac fermions in transition metal dichalcogenide PtTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Lorentz-violating type-II Dirac fermions in transition metal dichalcogenide PtTe$_2$|Mingzhe Yan,Huaqing Huang,Kenan Zhang,Eryin Wang,Wei Yao,Ke Deng,Guoliang Wan,Hongyun Zhang,Masashi Arita,Haitao Yang,Zhe Sun,Hong Yao,Yang Wu,Shoushan Fan,Wenhui Duan,Shuyun Zhou###
(1048331, 1048332)
 The Lorentz invariance is, however, not necessarilyrespected in condensed matter physics, and thus Lorentz-violating type-II Diracfermions with strongly tilted cones can be realized in topological semimetals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Lorentz-violating type-II Dirac fermions in transition metal dichalcogenide PtTe$_2$|Mingzhe Yan,Huaqing Huang,Kenan Zhang,Eryin Wang,Wei Yao,Ke Deng,Guoliang Wan,Hongyun Zhang,Masashi Arita,Haitao Yang,Zhe Sun,Hong Yao,Yang Wu,Shoushan Fan,Wenhui Duan,Shuyun Zhou###
(1048380, 1048381)
Here, we report the first experimental evidence of type-II Dirac fermions inbulk stoichiometric PtTe2 single crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PtTe2
###Lorentz-violating type-II Dirac fermions in transition metal dichalcogenide PtTe$_2$|Mingzhe Yan,Huaqing Huang,Kenan Zhang,Eryin Wang,Wei Yao,Ke Deng,Guoliang Wan,Hongyun Zhang,Masashi Arita,Haitao Yang,Zhe Sun,Hong Yao,Yang Wu,Shoushan Fan,Wenhui Duan,Shuyun Zhou###
(1048394, 1048396)
Here, we report the first experimental evidence of type-II Dirac fermions inbulk stoichiometric PtTe2 single crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Lorentz-violating type-II Dirac fermions in transition metal dichalcogenide PtTe$_2$|Mingzhe Yan,Huaqing Huang,Kenan Zhang,Eryin Wang,Wei Yao,Ke Deng,Guoliang Wan,Hongyun Zhang,Masashi Arita,Haitao Yang,Zhe Sun,Hong Yao,Yang Wu,Shoushan Fan,Wenhui Duan,Shuyun Zhou###
(1048417, 1048417)
 Angle-resolved photoemissionspectroscopy (ARPES) measurements and first-principles calculations reveal apair of strongly tilted Dirac cones along the Gamma-A direction under thesymmetry protection, confirming PtTe2 as a type-II Dirac semimetal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PtTe2
###Lorentz-violating type-II Dirac fermions in transition metal dichalcogenide PtTe$_2$|Mingzhe Yan,Huaqing Huang,Kenan Zhang,Eryin Wang,Wei Yao,Ke Deng,Guoliang Wan,Hongyun Zhang,Masashi Arita,Haitao Yang,Zhe Sun,Hong Yao,Yang Wu,Shoushan Fan,Wenhui Duan,Shuyun Zhou###
(1048469, 1048471)
 Angle-resolved photoemissionspectroscopy (ARPES) measurements and first-principles calculations reveal apair of strongly tilted Dirac cones along the Gamma-A direction under thesymmetry protection, confirming PtTe2 as a type-II Dirac semimetal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Lorentz-violating type-II Dirac fermions in transition metal dichalcogenide PtTe$_2$|Mingzhe Yan,Huaqing Huang,Kenan Zhang,Eryin Wang,Wei Yao,Ke Deng,Guoliang Wan,Hongyun Zhang,Masashi Arita,Haitao Yang,Zhe Sun,Hong Yao,Yang Wu,Shoushan Fan,Wenhui Duan,Shuyun Zhou###
(1048479, 1048480)
 Angle-resolved photoemissionspectroscopy (ARPES) measurements and first-principles calculations reveal apair of strongly tilted Dirac cones along the Gamma-A direction under thesymmetry protection, confirming PtTe2 as a type-II Dirac semimetal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Lorentz-violating type-II Dirac fermions in transition metal dichalcogenide PtTe$_2$|Mingzhe Yan,Huaqing Huang,Kenan Zhang,Eryin Wang,Wei Yao,Ke Deng,Guoliang Wan,Hongyun Zhang,Masashi Arita,Haitao Yang,Zhe Sun,Hong Yao,Yang Wu,Shoushan Fan,Wenhui Duan,Shuyun Zhou###
(1048496, 1048497)
 Therealization of type-II Dirac fermions opens a new door for exotic physicalproperties distinguished from type-I Dirac fermions in condensed mattermaterials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Lorentz-violating type-II Dirac fermions in transition metal dichalcogenide PtTe$_2$|Mingzhe Yan,Huaqing Huang,Kenan Zhang,Eryin Wang,Wei Yao,Ke Deng,Guoliang Wan,Hongyun Zhang,Masashi Arita,Haitao Yang,Zhe Sun,Hong Yao,Yang Wu,Shoushan Fan,Wenhui Duan,Shuyun Zhou###
(1048526, 1048526)
 Therealization of type-II Dirac fermions opens a new door for exotic physicalproperties distinguished from type-I Dirac fermions in condensed mattermaterials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaBi
###Presence of Exotic Electronic Surface States in LaBi and LaSb|X. H. Niu,D. F. Xu,Y. H. Bai,Q. Song,X. P. Shen,B. P. Xie,Z. Sun,Y. B. Huang,D. C. Peets,D. L. Feng###
(1048564, 1048565)
Presence of Exotic Electronic Surface States in LaBi and LaSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaSb
###Presence of Exotic Electronic Surface States in LaBi and LaSb|X. H. Niu,D. F. Xu,Y. H. Bai,Q. Song,X. P. Shen,B. P. Xie,Z. Sun,Y. B. Huang,D. C. Peets,D. L. Feng###
(1048569, 1048570)
Presence of Exotic Electronic Surface States in LaBi and LaSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La
###Presence of Exotic Electronic Surface States in LaBi and LaSb|X. H. Niu,D. F. Xu,Y. H. Bai,Q. Song,X. P. Shen,B. P. Xie,Z. Sun,Y. B. Huang,D. C. Peets,D. L. Feng###
(1048593, 1048593)
 Extremely high magnetoresistance (XMR) in the lanthanum monopnictides LaX<missing VAR>(X<missing VAR>  Sb, Bi) has recently attracted interest in these compounds as candidatetopological materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sb
###Presence of Exotic Electronic Surface States in LaBi and LaSb|X. H. Niu,D. F. Xu,Y. H. Bai,Q. Song,X. P. Shen,B. P. Xie,Z. Sun,Y. B. Huang,D. C. Peets,D. L. Feng###
(1048601, 1048601)
 Extremely high magnetoresistance (XMR) in the lanthanum monopnictides LaX<missing VAR>(X<missing VAR>  Sb, Bi) has recently attracted interest in these compounds as candidatetopological materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi
###Presence of Exotic Electronic Surface States in LaBi and LaSb|X. H. Niu,D. F. Xu,Y. H. Bai,Q. Song,X. P. Shen,B. P. Xie,Z. Sun,Y. B. Huang,D. C. Peets,D. L. Feng###
(1048604, 1048604)
 Extremely high magnetoresistance (XMR) in the lanthanum monopnictides LaX<missing VAR>(X<missing VAR>  Sb, Bi) has recently attracted interest in these compounds as candidatetopological materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Presence of Exotic Electronic Surface States in LaBi and LaSb|X. H. Niu,D. F. Xu,Y. H. Bai,Q. Song,X. P. Shen,B. P. Xie,Z. Sun,Y. B. Huang,D. C. Peets,D. L. Feng###
(1048698, 1048698)
 Ourangle-resolved photoemission spectroscopy (ARPES) data reveal multipleDirac-like surface states near the Fermi level in both materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La
###Presence of Exotic Electronic Surface States in LaBi and LaSb|X. H. Niu,D. F. Xu,Y. H. Bai,Q. Song,X. P. Shen,B. P. Xie,Z. Sun,Y. B. Huang,D. C. Peets,D. L. Feng###
(1048841, 1048841)
 Thus the spin-orbit coupling-induced orbital and spin angular momentumtextures may provide a mechanism to forbid backscattering in zero field,suggesting that surface and near-surface bulk bands may contribute strongly toXMR in LaX<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Au
###Rashba interaction and local magnetic moments in a graphene-Boron Nitride heterostructure by intercalation with Au|E. C. T. O'Farrell,J. Y. Tan,Y. Yeo,G. K. W. Koon,K. Watanabe,T. Taniguchi,B. Özyilmaz###
(1048954, 1048954)
Rashba interaction and local magnetic moments in a graphene-Boron Nitride heterostructure by intercalation with Au.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 25, 'meV', 3],[233.0, 75, '%', 5],[259.0, 1, 'T', 5]

Au
###Rashba interaction and local magnetic moments in a graphene-Boron Nitride heterostructure by intercalation with Au|E. C. T. O'Farrell,J. Y. Tan,Y. Yeo,G. K. W. Koon,K. Watanabe,T. Taniguchi,B. Özyilmaz###
(1048986, 1048986)
 We intercalate a van der Waals heterostructure of graphene and hexagonalBoron Nitride with Au, by encapsulation, and show that Au at the interface istwo dimensional.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 25, 'meV', 2],[201.0, 75, '%', 4],[227.0, 1, 'T', 4]

Au
###Rashba interaction and local magnetic moments in a graphene-Boron Nitride heterostructure by intercalation with Au|E. C. T. O'Farrell,J. Y. Tan,Y. Yeo,G. K. W. Koon,K. Watanabe,T. Taniguchi,B. Özyilmaz###
(1049000, 1049000)
 We intercalate a van der Waals heterostructure of graphene and hexagonalBoron Nitride with Au, by encapsulation, and show that Au at the interface istwo dimensional.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 25, 'meV', 2],[187.0, 75, '%', 4],[213.0, 1, 'T', 4]

Au
###Rashba interaction and local magnetic moments in a graphene-Boron Nitride heterostructure by intercalation with Au|E. C. T. O'Farrell,J. Y. Tan,Y. Yeo,G. K. W. Koon,K. Watanabe,T. Taniguchi,B. Özyilmaz###
(1049035, 1049035)
 A charge transfer upon current annealing indicatesredistribution of Au and induces splitting of the graphene bandstructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 25, 'meV', 1],[152.0, 75, '%', 3],[178.0, 1, 'T', 3]

Au
###Rashba interaction and local magnetic moments in a graphene-Boron Nitride heterostructure by intercalation with Au|E. C. T. O'Farrell,J. Y. Tan,Y. Yeo,G. K. W. Koon,K. Watanabe,T. Taniguchi,B. Özyilmaz###
(1049229, 1049229)
 These demonstrate that hybridizedAu has a magnetic moment and suggests the proximity to formation of acollective magnetic phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 25, 'meV', 3],[42.0, 75, '%', 1],[16.0, 1, 'T', 1]

(C4)
###Broken rotational symmetry on the Fermi surface of a high-T$_\mathrm{c}$ superconductor|B. J. Ramshaw,N. Harrison,S. E. Sebastian,S. Ghannadzadeh,K. A. Modic,D. A. Bonn,W. N. Hardy,Ruixing Liang,P. A. Goddard###
(1049319, 1049322)
 Broken fourfold rotational (C4) symmetry is observed in the experimentalproperties of several classes of unconventional superconductors.
Featurization successful!
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YBa2Cu3O6.58
###Broken rotational symmetry on the Fermi surface of a high-T$_\mathrm{c}$ superconductor|B. J. Ramshaw,N. Harrison,S. E. Sebastian,S. Ghannadzadeh,K. A. Modic,D. A. Bonn,W. N. Hardy,Ruixing Liang,P. A. Goddard###
(1049481, 1049487)
 We have measured a pronounced anisotropy in the angledependence of the interlayer magnetoresistance of the underdopedhigh-Tmathrmc) superconductor YBa2Cu3O6.58, directlyrevealing broken C4 symmetry on the Fermi surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5230524642289348,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2384737678855326,0,0,0,0,0,0,0,0,0,0.0794912559618442,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1589825119236884,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C4
###Broken rotational symmetry on the Fermi surface of a high-T$_\mathrm{c}$ superconductor|B. J. Ramshaw,N. Harrison,S. E. Sebastian,S. Ghannadzadeh,K. A. Modic,D. A. Bonn,W. N. Hardy,Ruixing Liang,P. A. Goddard###
(1049497, 1049498)
 We have measured a pronounced anisotropy in the angledependence of the interlayer magnetoresistance of the underdopedhigh-Tmathrmc) superconductor YBa2Cu3O6.58, directlyrevealing broken C4 symmetry on the Fermi surface.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C2
###Broken rotational symmetry on the Fermi surface of a high-T$_\mathrm{c}$ superconductor|B. J. Ramshaw,N. Harrison,S. E. Sebastian,S. Ghannadzadeh,K. A. Modic,D. A. Bonn,W. N. Hardy,Ruixing Liang,P. A. Goddard###
(1049529, 1049530)
 Moreover, we demonstratethat this Fermi surface has C2 symmetry of the type produced by a uniaxialor anisotropic density-wave phase.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C4
###Broken rotational symmetry on the Fermi surface of a high-T$_\mathrm{c}$ superconductor|B. J. Ramshaw,N. Harrison,S. E. Sebastian,S. Ghannadzadeh,K. A. Modic,D. A. Bonn,W. N. Hardy,Ruixing Liang,P. A. Goddard###
(1049572, 1049573)
 This establishes the central role of C4symmetry breaking in the Fermi surface reconstruction ofYBa2Cu3O6delta, and suggests a striking degree of universalityamong unconventional superconductors.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YBa2Cu3O6
###Broken rotational symmetry on the Fermi surface of a high-T$_\mathrm{c}$ superconductor|B. J. Ramshaw,N. Harrison,S. E. Sebastian,S. Ghannadzadeh,K. A. Modic,D. A. Bonn,W. N. Hardy,Ruixing Liang,P. A. Goddard###
(1049593, 1049599)
 This establishes the central role of C4symmetry breaking in the Fermi surface reconstruction ofYBa2Cu3O6delta, and suggests a striking degree of universalityamong unconventional superconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

IV
###Tunneling magnetoresistance in trilayer structures composed of group-IV ferromagnetic semiconductor Ge1-xFex, MgO, and Fe|Yuki K. Wakabayashi,Kohei Okamoto,Yoshisuke Ban,Shoichi Sato,Masaaki Tanaka,Shinobu Ohya###
(1049649, 1049650)
Tunneling magnetoresistance in trilayer structures composed of group-IV ferromagnetic semiconductor Ge1-xFex, MgO, and Fe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[361.0, 0.3, '%', 8]

Ge1-x
###Tunneling magnetoresistance in trilayer structures composed of group-IV ferromagnetic semiconductor Ge1-xFex, MgO, and Fe|Yuki K. Wakabayashi,Kohei Okamoto,Yoshisuke Ban,Shoichi Sato,Masaaki Tanaka,Shinobu Ohya###
(1049656, 1049659)
Tunneling magnetoresistance in trilayer structures composed of group-IV ferromagnetic semiconductor Ge1-xFex, MgO, and Fe.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[352.0, 0.3, '%', 8]

MgO
###Tunneling magnetoresistance in trilayer structures composed of group-IV ferromagnetic semiconductor Ge1-xFex, MgO, and Fe|Yuki K. Wakabayashi,Kohei Okamoto,Yoshisuke Ban,Shoichi Sato,Masaaki Tanaka,Shinobu Ohya###
(1049663, 1049664)
Tunneling magnetoresistance in trilayer structures composed of group-IV ferromagnetic semiconductor Ge1-xFex, MgO, and Fe.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[347.0, 0.3, '%', 8]

Fe
###Tunneling magnetoresistance in trilayer structures composed of group-IV ferromagnetic semiconductor Ge1-xFex, MgO, and Fe|Yuki K. Wakabayashi,Kohei Okamoto,Yoshisuke Ban,Shoichi Sato,Masaaki Tanaka,Shinobu Ohya###
(1049669, 1049669)
Tunneling magnetoresistance in trilayer structures composed of group-IV ferromagnetic semiconductor Ge1-xFex, MgO, and Fe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[342.0, 0.3, '%', 8]

IV
###Tunneling magnetoresistance in trilayer structures composed of group-IV ferromagnetic semiconductor Ge1-xFex, MgO, and Fe|Yuki K. Wakabayashi,Kohei Okamoto,Yoshisuke Ban,Shoichi Sato,Masaaki Tanaka,Shinobu Ohya###
(1049674, 1049675)
 Group-IV-based ferromagnetic semiconductor Ge1-xFex (GeFe) is one of the mostpromising materials for efficient spin injectors and detectors for Si and Ge.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[336.0, 0.3, '%', 7]

Ge1-x
###Tunneling magnetoresistance in trilayer structures composed of group-IV ferromagnetic semiconductor Ge1-xFex, MgO, and Fe|Yuki K. Wakabayashi,Kohei Okamoto,Yoshisuke Ban,Shoichi Sato,Masaaki Tanaka,Shinobu Ohya###
(1049683, 1049686)
 Group-IV-based ferromagnetic semiconductor Ge1-xFex (GeFe) is one of the mostpromising materials for efficient spin injectors and detectors for Si and Ge.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[325.0, 0.3, '%', 7]

(GeFe)
###Tunneling magnetoresistance in trilayer structures composed of group-IV ferromagnetic semiconductor Ge1-xFex, MgO, and Fe|Yuki K. Wakabayashi,Kohei Okamoto,Yoshisuke Ban,Shoichi Sato,Masaaki Tanaka,Shinobu Ohya###
(1049689, 1049692)
 Group-IV-based ferromagnetic semiconductor Ge1-xFex (GeFe) is one of the mostpromising materials for efficient spin injectors and detectors for Si and Ge.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[319.0, 0.3, '%', 7]

Si
###Tunneling magnetoresistance in trilayer structures composed of group-IV ferromagnetic semiconductor Ge1-xFex, MgO, and Fe|Yuki K. Wakabayashi,Kohei Okamoto,Yoshisuke Ban,Shoichi Sato,Masaaki Tanaka,Shinobu Ohya###
(1049723, 1049723)
 Group-IV-based ferromagnetic semiconductor Ge1-xFex (GeFe) is one of the mostpromising materials for efficient spin injectors and detectors for Si and Ge.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[288.0, 0.3, '%', 7]

Ge
###Tunneling magnetoresistance in trilayer structures composed of group-IV ferromagnetic semiconductor Ge1-xFex, MgO, and Fe|Yuki K. Wakabayashi,Kohei Okamoto,Yoshisuke Ban,Shoichi Sato,Masaaki Tanaka,Shinobu Ohya###
(1049727, 1049727)
 Group-IV-based ferromagnetic semiconductor Ge1-xFex (GeFe) is one of the mostpromising materials for efficient spin injectors and detectors for Si and Ge.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[284.0, 0.3, '%', 7]

GeFe
###Tunneling magnetoresistance in trilayer structures composed of group-IV ferromagnetic semiconductor Ge1-xFex, MgO, and Fe|Yuki K. Wakabayashi,Kohei Okamoto,Yoshisuke Ban,Shoichi Sato,Masaaki Tanaka,Shinobu Ohya###
(1049794, 1049795)
 9) suggested thatthe Fermi level is located in two overlapping largely spin-polarized bandsformed in the bandgap of GeFe; spin-down d(e) band and spin-up p-d(t<missing VAR>2) band.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[216.0, 0.3, '%', 4]

In
###Tunneling magnetoresistance in trilayer structures composed of group-IV ferromagnetic semiconductor Ge1-xFex, MgO, and Fe|Yuki K. Wakabayashi,Kohei Okamoto,Yoshisuke Ban,Shoichi Sato,Masaaki Tanaka,Shinobu Ohya###
(1049860, 1049860)
 In this study, we show the first successful observation of thetunneling magnetoresistance (TMR) in magnetic tunnel junctions (MTJs)containing a group-IV ferromagnetic semiconductor, that is, in MTJs composed ofepitaxially grown Fe/MgO/Ge0.935Fe0.065.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 0.3, '%', 2]

IV
###Tunneling magnetoresistance in trilayer structures composed of group-IV ferromagnetic semiconductor Ge1-xFex, MgO, and Fe|Yuki K. Wakabayashi,Kohei Okamoto,Yoshisuke Ban,Shoichi Sato,Masaaki Tanaka,Shinobu Ohya###
(1049915, 1049916)
 In this study, we show the first successful observation of thetunneling magnetoresistance (TMR) in magnetic tunnel junctions (MTJs)containing a group-IV ferromagnetic semiconductor, that is, in MTJs composed ofepitaxially grown Fe/MgO/Ge0.935Fe0.065.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 0.3, '%', 2]

Fe/MgO/Ge0.935Fe0.065
###Tunneling magnetoresistance in trilayer structures composed of group-IV ferromagnetic semiconductor Ge1-xFex, MgO, and Fe|Yuki K. Wakabayashi,Kohei Okamoto,Yoshisuke Ban,Shoichi Sato,Masaaki Tanaka,Shinobu Ohya###
(1049943, 1049951)
 In this study, we show the first successful observation of thetunneling magnetoresistance (TMR) in magnetic tunnel junctions (MTJs)containing a group-IV ferromagnetic semiconductor, that is, in MTJs composed ofepitaxially grown Fe/MgO/Ge0.935Fe0.065.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[60.0, 0.3, '%', 2]

GeFe
###Tunneling magnetoresistance in trilayer structures composed of group-IV ferromagnetic semiconductor Ge1-xFex, MgO, and Fe|Yuki K. Wakabayashi,Kohei Okamoto,Yoshisuke Ban,Shoichi Sato,Masaaki Tanaka,Shinobu Ohya###
(1049974, 1049975)
 We find that the p-d(t<missing VAR>2) band in GeFeis mainly responsible for the tunneling transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 0.3, '%', 1]

MgO
###Tunneling magnetoresistance in trilayer structures composed of group-IV ferromagnetic semiconductor Ge1-xFex, MgO, and Fe|Yuki K. Wakabayashi,Kohei Okamoto,Yoshisuke Ban,Shoichi Sato,Masaaki Tanaka,Shinobu Ohya###
(1050057, 1050058)
 Although the obtained TMRratio is small (0.3%), the TMR ratio is expected to be enhanced by suppressingleak current through amorphous-like crystal domains observed in MgO.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 0.3, '%', 0]

In
###Weak de-localization in graphene on a ferromagnetic insulating film|Luca Pietrobon,Lorenzo Fallarino,Andreas Berger,Andrey Chuvilin,Fèlix Casanova,Luis E. Hueso###
(1050162, 1050162)
 In thiswork, we study in detail the interplay between the magnetoresistance ofgraphene and the magnetization of an underlying ferromagnetic insulating film.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe(Te0.9Se0.1)
###Upper Critical Field and Kondo Effects in Fe(Te0.9Se0.1) Thin Films by Pulsed Field Measurements|M. B. Salamon,N. Cornell,M. Jaime,F. F. Balakirev,A. Zakhidov,J. Huang,H. Wang###
(1050358, 1050364)
Upper Critical Field and Kondo Effects in Fe(Te0.9Se0.1) Thin Films by Pulsed Field Measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.05,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.45,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 100, 'T', 1],[118.0, 45, 'T', 2]

Fe(Te09Se01)
###Upper Critical Field and Kondo Effects in Fe(Te0.9Se0.1) Thin Films by Pulsed Field Measurements|M. B. Salamon,N. Cornell,M. Jaime,F. F. Balakirev,A. Zakhidov,J. Huang,H. Wang###
(1050393, 1050401)
 The transition temperatures of epitaxial films of Fe(Te09Se01) areremarkably insensitive to applied magnetic field, leading to predictions ofupper critical fields Bc2(T<missing VAR>  0) in excess of 100 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.09090909090909091,0,0,0,0,0,0,0,0.09090909090909091,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 100, 'T', 0],[81.0, 45, 'T', 1]

Tc
###Upper Critical Field and Kondo Effects in Fe(Te0.9Se0.1) Thin Films by Pulsed Field Measurements|M. B. Salamon,N. Cornell,M. Jaime,F. F. Balakirev,A. Zakhidov,J. Huang,H. Wang###
(1050558, 1050558)
 The same films showstrong magnetoresistance in fields above Bc2(T), consistent with the observedKondo minimum seen above Tc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 100, 'T', 2],[76.0, 45, 'T', 1]

WHH
###Upper Critical Field and Kondo Effects in Fe(Te0.9Se0.1) Thin Films by Pulsed Field Measurements|M. B. Salamon,N. Cornell,M. Jaime,F. F. Balakirev,A. Zakhidov,J. Huang,H. Wang###
(1050582, 1050584)
 Fits to the temperature dependence in the contextof the WHH model, using the experimental value of the Maki parameter, requirean effective spin-orbit relaxation parameter of order unity.
Featurization terminated normally.
0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 100, 'T', 3],[100.0, 45, 'T', 2]

WHH
###Upper Critical Field and Kondo Effects in Fe(Te0.9Se0.1) Thin Films by Pulsed Field Measurements|M. B. Salamon,N. Cornell,M. Jaime,F. F. Balakirev,A. Zakhidov,J. Huang,H. Wang###
(1050662, 1050664)
 We suggest thatKondo localization plays a similar role to spin-orbit pair breaking in makingWHH fits to the data.
Featurization terminated normally.
0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[214.0, 100, 'T', 4],[180.0, 45, 'T', 3]

In
###Magnetic avalanches in granular ferromagnets: Thermal activated collective behavior|Gia-Wei Chern###
(1050837, 1050837)
 In particular, we observe an intriguing criticality controlledby the rate of energy dissipation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GdPd3
###Oscillating magnetoresistance due to fragile spin structure in metallic GdPd$_3$|Abhishek Pandey,Chandan Mazumdar,R. Ranganathan,D. C. Johnston###
(1051006, 1051008)
Oscillating magnetoresistance due to fragile spin structure in metallic GdPd3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GdPd3
###Oscillating magnetoresistance due to fragile spin structure in metallic GdPd$_3$|Abhishek Pandey,Chandan Mazumdar,R. Ranganathan,D. C. Johnston###
(1051125, 1051127)
 We report here the investigation of oscillating MR ina cubic intermetallic compound GdPd3, which is the only compound thatexhibits MR oscillations between positive and negative values.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GdPd3
###Oscillating magnetoresistance due to fragile spin structure in metallic GdPd$_3$|Abhishek Pandey,Chandan Mazumdar,R. Ranganathan,D. C. Johnston###
(1051212, 1051214)
 The magnetic structurein GdPd3 is highly fragile since applied magnetic fields of moderatestrength significantly alter the spin arrangement within the system--a behaviorthat manifests itself in the oscillating MR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GdPd3
###Oscillating magnetoresistance due to fragile spin structure in metallic GdPd$_3$|Abhishek Pandey,Chandan Mazumdar,R. Ranganathan,D. C. Johnston###
(1051284, 1051286)
 Intriguing magnetotransportcharacteristics of GdPd3 are appealing for field-sensitive deviceapplications, especially if the MR oscillation could materialize at highertemperature by manipulating the magnetic interaction through perturbationscaused by chemical substitutions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mg
###Effect of Mg-Al insertion on magnetotransport properties in epitaxial Fe/sputter-deposited $MgAl_{2}O_{4}$/Fe(001) magnetic tunnel junctions|Mohamed Belmoubarik,Hiroaki Sukegawa,Tadakatsu Ohkubo,Seiji Mitani,Kazuhiro Hono###
(1051362, 1051362)
Effect of Mg-Al insertion on magnetotransport properties in epitaxial Fe/sputter-deposited MgAl2O4/Fe(001) magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[180.0, 0.1, 'nm', 3],[204.0, 200, '%', 3],[248.0, 0.2, 'nm', 4]

Al
###Effect of Mg-Al insertion on magnetotransport properties in epitaxial Fe/sputter-deposited $MgAl_{2}O_{4}$/Fe(001) magnetic tunnel junctions|Mohamed Belmoubarik,Hiroaki Sukegawa,Tadakatsu Ohkubo,Seiji Mitani,Kazuhiro Hono###
(1051364, 1051364)
Effect of Mg-Al insertion on magnetotransport properties in epitaxial Fe/sputter-deposited MgAl2O4/Fe(001) magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 0.1, 'nm', 3],[202.0, 200, '%', 3],[246.0, 0.2, 'nm', 4]

Fe
###Effect of Mg-Al insertion on magnetotransport properties in epitaxial Fe/sputter-deposited $MgAl_{2}O_{4}$/Fe(001) magnetic tunnel junctions|Mohamed Belmoubarik,Hiroaki Sukegawa,Tadakatsu Ohkubo,Seiji Mitani,Kazuhiro Hono###
(1051378, 1051378)
Effect of Mg-Al insertion on magnetotransport properties in epitaxial Fe/sputter-deposited MgAl2O4/Fe(001) magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 0.1, 'nm', 3],[188.0, 200, '%', 3],[232.0, 0.2, 'nm', 4]

Mg
###Effect of Mg-Al insertion on magnetotransport properties in epitaxial Fe/sputter-deposited $MgAl_{2}O_{4}$/Fe(001) magnetic tunnel junctions|Mohamed Belmoubarik,Hiroaki Sukegawa,Tadakatsu Ohkubo,Seiji Mitani,Kazuhiro Hono###
(1051414, 1051414)
 We investigated the effect of a Mg-Al layer insertion at the bottom interfaceof epitaxial Fe/MgAl2O4/Fe(001) magnetic tunnel junctions (MTJs) ontheir spin-dependent transport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 0.1, 'nm', 2],[152.0, 200, '%', 2],[196.0, 0.2, 'nm', 3]

Al
###Effect of Mg-Al insertion on magnetotransport properties in epitaxial Fe/sputter-deposited $MgAl_{2}O_{4}$/Fe(001) magnetic tunnel junctions|Mohamed Belmoubarik,Hiroaki Sukegawa,Tadakatsu Ohkubo,Seiji Mitani,Kazuhiro Hono###
(1051416, 1051416)
 We investigated the effect of a Mg-Al layer insertion at the bottom interfaceof epitaxial Fe/MgAl2O4/Fe(001) magnetic tunnel junctions (MTJs) ontheir spin-dependent transport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 0.1, 'nm', 2],[150.0, 200, '%', 2],[194.0, 0.2, 'nm', 3]

Fe/MgAl2O4
###Effect of Mg-Al insertion on magnetotransport properties in epitaxial Fe/sputter-deposited $MgAl_{2}O_{4}$/Fe(001) magnetic tunnel junctions|Mohamed Belmoubarik,Hiroaki Sukegawa,Tadakatsu Ohkubo,Seiji Mitani,Kazuhiro Hono###
(1051435, 1051441)
 We investigated the effect of a Mg-Al layer insertion at the bottom interfaceof epitaxial Fe/MgAl2O4/Fe(001) magnetic tunnel junctions (MTJs) ontheir spin-dependent transport properties.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[101.0, 0.1, 'nm', 2],[125.0, 200, '%', 2],[169.0, 0.2, 'nm', 3]

Mg
###Effect of Mg-Al insertion on magnetotransport properties in epitaxial Fe/sputter-deposited $MgAl_{2}O_{4}$/Fe(001) magnetic tunnel junctions|Mohamed Belmoubarik,Hiroaki Sukegawa,Tadakatsu Ohkubo,Seiji Mitani,Kazuhiro Hono###
(1051520, 1051520)
 The tunnel magnetoresistance (TMR)ratio and differential conductance spectra for the parallel magneticconfiguration exhibited clear dependence on the inserted Mg-Al thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 0.1, 'nm', 1],[46.0, 200, '%', 1],[90.0, 0.2, 'nm', 2]

Al
###Effect of Mg-Al insertion on magnetotransport properties in epitaxial Fe/sputter-deposited $MgAl_{2}O_{4}$/Fe(001) magnetic tunnel junctions|Mohamed Belmoubarik,Hiroaki Sukegawa,Tadakatsu Ohkubo,Seiji Mitani,Kazuhiro Hono###
(1051522, 1051522)
 The tunnel magnetoresistance (TMR)ratio and differential conductance spectra for the parallel magneticconfiguration exhibited clear dependence on the inserted Mg-Al thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 0.1, 'nm', 1],[44.0, 200, '%', 1],[88.0, 0.2, 'nm', 2]

Mg
###Effect of Mg-Al insertion on magnetotransport properties in epitaxial Fe/sputter-deposited $MgAl_{2}O_{4}$/Fe(001) magnetic tunnel junctions|Mohamed Belmoubarik,Hiroaki Sukegawa,Tadakatsu Ohkubo,Seiji Mitani,Kazuhiro Hono###
(1051532, 1051532)
 Aslight Mg-Al insertion (thickness < 0.1 nm) was effective for obtaining a largeTMR ratio above 200% at room temperature and observing a distinct local minimumstructure in conductance spectra.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 0.1, 'nm', 0],[34.0, 200, '%', 0],[78.0, 0.2, 'nm', 1]

Al
###Effect of Mg-Al insertion on magnetotransport properties in epitaxial Fe/sputter-deposited $MgAl_{2}O_{4}$/Fe(001) magnetic tunnel junctions|Mohamed Belmoubarik,Hiroaki Sukegawa,Tadakatsu Ohkubo,Seiji Mitani,Kazuhiro Hono###
(1051534, 1051534)
 Aslight Mg-Al insertion (thickness < 0.1 nm) was effective for obtaining a largeTMR ratio above 200% at room temperature and observing a distinct local minimumstructure in conductance spectra.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 0.1, 'nm', 0],[32.0, 200, '%', 0],[76.0, 0.2, 'nm', 1]

In
###Effect of Mg-Al insertion on magnetotransport properties in epitaxial Fe/sputter-deposited $MgAl_{2}O_{4}$/Fe(001) magnetic tunnel junctions|Mohamed Belmoubarik,Hiroaki Sukegawa,Tadakatsu Ohkubo,Seiji Mitani,Kazuhiro Hono###
(1051597, 1051597)
 In contrast, thicker Mg-Al (> 0.2 nm) induceda reduction of TMR ratios and featureless conductance spectra, indicating adegradation of the bottom-Fe/MgAl2O4 interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 0.1, 'nm', 1],[31.0, 200, '%', 1],[13.0, 0.2, 'nm', 0]

Mg
###Effect of Mg-Al insertion on magnetotransport properties in epitaxial Fe/sputter-deposited $MgAl_{2}O_{4}$/Fe(001) magnetic tunnel junctions|Mohamed Belmoubarik,Hiroaki Sukegawa,Tadakatsu Ohkubo,Seiji Mitani,Kazuhiro Hono###
(1051604, 1051604)
 In contrast, thicker Mg-Al (> 0.2 nm) induceda reduction of TMR ratios and featureless conductance spectra, indicating adegradation of the bottom-Fe/MgAl2O4 interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 0.1, 'nm', 1],[38.0, 200, '%', 1],[6.0, 0.2, 'nm', 0]

Al
###Effect of Mg-Al insertion on magnetotransport properties in epitaxial Fe/sputter-deposited $MgAl_{2}O_{4}$/Fe(001) magnetic tunnel junctions|Mohamed Belmoubarik,Hiroaki Sukegawa,Tadakatsu Ohkubo,Seiji Mitani,Kazuhiro Hono###
(1051606, 1051606)
 In contrast, thicker Mg-Al (> 0.2 nm) induceda reduction of TMR ratios and featureless conductance spectra, indicating adegradation of the bottom-Fe/MgAl2O4 interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 0.1, 'nm', 1],[40.0, 200, '%', 1],[4.0, 0.2, 'nm', 0]

Fe/MgAl2O4
###Effect of Mg-Al insertion on magnetotransport properties in epitaxial Fe/sputter-deposited $MgAl_{2}O_{4}$/Fe(001) magnetic tunnel junctions|Mohamed Belmoubarik,Hiroaki Sukegawa,Tadakatsu Ohkubo,Seiji Mitani,Kazuhiro Hono###
(1051650, 1051656)
 In contrast, thicker Mg-Al (> 0.2 nm) induceda reduction of TMR ratios and featureless conductance spectra, indicating adegradation of the bottom-Fe/MgAl2O4 interface.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[108.0, 0.1, 'nm', 1],[84.0, 200, '%', 1],[40.0, 0.2, 'nm', 0]

Mg
###Effect of Mg-Al insertion on magnetotransport properties in epitaxial Fe/sputter-deposited $MgAl_{2}O_{4}$/Fe(001) magnetic tunnel junctions|Mohamed Belmoubarik,Hiroaki Sukegawa,Tadakatsu Ohkubo,Seiji Mitani,Kazuhiro Hono###
(1051669, 1051669)
 Therefore, a minimalMg-Al insertion was found to be effective to maximize the TMR ratio for asputtered MgAl2O4-based MTJ.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 0.1, 'nm', 2],[103.0, 200, '%', 2],[59.0, 0.2, 'nm', 1]

Al
###Effect of Mg-Al insertion on magnetotransport properties in epitaxial Fe/sputter-deposited $MgAl_{2}O_{4}$/Fe(001) magnetic tunnel junctions|Mohamed Belmoubarik,Hiroaki Sukegawa,Tadakatsu Ohkubo,Seiji Mitani,Kazuhiro Hono###
(1051671, 1051671)
 Therefore, a minimalMg-Al insertion was found to be effective to maximize the TMR ratio for asputtered MgAl2O4-based MTJ.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 0.1, 'nm', 2],[105.0, 200, '%', 2],[61.0, 0.2, 'nm', 1]

MgAl2O4
###Effect of Mg-Al insertion on magnetotransport properties in epitaxial Fe/sputter-deposited $MgAl_{2}O_{4}$/Fe(001) magnetic tunnel junctions|Mohamed Belmoubarik,Hiroaki Sukegawa,Tadakatsu Ohkubo,Seiji Mitani,Kazuhiro Hono###
(1051704, 1051708)
 Therefore, a minimalMg-Al insertion was found to be effective to maximize the TMR ratio for asputtered MgAl2O4-based MTJ.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0.14285714285714285,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 0.1, 'nm', 2],[138.0, 200, '%', 2],[94.0, 0.2, 'nm', 1]

TaP
###Superconductivity Induced by High Pressure in Weyl Semimetal TaP|Yufeng Li,Yonghui Zhou,Zhaopeng Guo,Xuliang Chen,Pengchao Lu,Xuefei Wang,Chao An,Ying Zhou,Jie Xing,Guan Du,Xiyu Zhu,Huan Yang,Jian Sun,Zhaorong Yang,Yuheng Zhang,Hai-Hu Wen###
(1051741, 1051742)
Superconductivity Induced by High Pressure in Weyl Semimetal TaP.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 100, 'GPa', 4],[163.0, 70, 'GPa', 4],[264.0, 70, 'GPa', 7]

In
###Superconductivity Induced by High Pressure in Weyl Semimetal TaP|Yufeng Li,Yonghui Zhou,Zhaopeng Guo,Xuliang Chen,Pengchao Lu,Xuefei Wang,Chao An,Ying Zhou,Jie Xing,Guan Du,Xiyu Zhu,Huan Yang,Jian Sun,Zhaorong Yang,Yuheng Zhang,Hai-Hu Wen###
(1051852, 1051852)
 In this work, by doingresistive measurements on a recently recognized Weyl semimetal TaP underpressure up to about 100 GPa, we observe superconductivity at about 70 GPa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 100, 'GPa', 0],[53.0, 70, 'GPa', 0],[154.0, 70, 'GPa', 3]

TaP
###Superconductivity Induced by High Pressure in Weyl Semimetal TaP|Yufeng Li,Yonghui Zhou,Zhaopeng Guo,Xuliang Chen,Pengchao Lu,Xuefei Wang,Chao An,Ying Zhou,Jie Xing,Guan Du,Xiyu Zhu,Huan Yang,Jian Sun,Zhaorong Yang,Yuheng Zhang,Hai-Hu Wen###
(1051880, 1051881)
 In this work, by doingresistive measurements on a recently recognized Weyl semimetal TaP underpressure up to about 100 GPa, we observe superconductivity at about 70 GPa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 100, 'GPa', 0],[24.0, 70, 'GPa', 0],[125.0, 70, 'GPa', 3]

TaP
###Superconductivity Induced by High Pressure in Weyl Semimetal TaP|Yufeng Li,Yonghui Zhou,Zhaopeng Guo,Xuliang Chen,Pengchao Lu,Xuefei Wang,Chao An,Ying Zhou,Jie Xing,Guan Du,Xiyu Zhu,Huan Yang,Jian Sun,Zhaorong Yang,Yuheng Zhang,Hai-Hu Wen###
(1052037, 1052038)
 Our discovery of superconductivity in TaPby pressure will stimulate further study on superconductivity in Weylsemimetals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 100, 'GPa', 4],[132.0, 70, 'GPa', 4],[31.0, 70, 'GPa', 1]

MgGa2O4
###MgGa2O4 spinel barrier for magnetic tunnel junctions: coherent tunneling and low barrier height|Hiroaki Sukegawa,Yushi Kato,Mohamed Belmoubarik,P. -H. Cheng,Tadaomi Daibou,Naoharu Shimomura,Yuuzo Kamiguchi,Junichi Ito,Hiroaki Yoda,Tadakatsu Ohkubo,Seiji Mitani,Kazuhiro Hono###
(1052073, 1052077)
MgGa2O4 spinel barrier for magnetic tunnel junctions coherent tunneling and low barrier height.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 121, '%', 2],[103.0, 196, '%', 2],[107.0, 4, 'K', 2]

Fe
###MgGa2O4 spinel barrier for magnetic tunnel junctions: coherent tunneling and low barrier height|Hiroaki Sukegawa,Yushi Kato,Mohamed Belmoubarik,P. -H. Cheng,Tadaomi Daibou,Naoharu Shimomura,Yuuzo Kamiguchi,Junichi Ito,Hiroaki Yoda,Tadakatsu Ohkubo,Seiji Mitani,Kazuhiro Hono###
(1052106, 1052106)
 Epitaxial Fe/magnesium gallium spinel oxide (MgGa2O4)/Fe(001) magnetic tunneljunctions (MTJs) were fabricated by magnetron sputtering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 121, '%', 1],[74.0, 196, '%', 1],[78.0, 4, 'K', 1]

(MgGa2O4)
###MgGa2O4 spinel barrier for magnetic tunnel junctions: coherent tunneling and low barrier height|Hiroaki Sukegawa,Yushi Kato,Mohamed Belmoubarik,P. -H. Cheng,Tadaomi Daibou,Naoharu Shimomura,Yuuzo Kamiguchi,Junichi Ito,Hiroaki Yoda,Tadakatsu Ohkubo,Seiji Mitani,Kazuhiro Hono###
(1052116, 1052122)
 Epitaxial Fe/magnesium gallium spinel oxide (MgGa2O4)/Fe(001) magnetic tunneljunctions (MTJs) were fabricated by magnetron sputtering.
Featurization successful!
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 121, '%', 1],[58.0, 196, '%', 1],[62.0, 4, 'K', 1]

MgGa2O4
###MgGa2O4 spinel barrier for magnetic tunnel junctions: coherent tunneling and low barrier height|Hiroaki Sukegawa,Yushi Kato,Mohamed Belmoubarik,P. -H. Cheng,Tadaomi Daibou,Naoharu Shimomura,Yuuzo Kamiguchi,Junichi Ito,Hiroaki Yoda,Tadakatsu Ohkubo,Seiji Mitani,Kazuhiro Hono###
(1052218, 1052222)
 Tunnelmagnetoresistance (TMR) ratio up to 121% at room temperature (196% at 4 K) wasobserved, suggesting a TMR enhancement by the coherent tunneling effect in theMgGa2O4 barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 121, '%', 0],[38.0, 196, '%', 0],[34.0, 4, 'K', 0]

MgGa2O4
###MgGa2O4 spinel barrier for magnetic tunnel junctions: coherent tunneling and low barrier height|Hiroaki Sukegawa,Yushi Kato,Mohamed Belmoubarik,P. -H. Cheng,Tadaomi Daibou,Naoharu Shimomura,Yuuzo Kamiguchi,Junichi Ito,Hiroaki Yoda,Tadakatsu Ohkubo,Seiji Mitani,Kazuhiro Hono###
(1052229, 1052233)
 The MgGa2O4 layer had a spinel structure and it showed goodlattice matching with the Fe layers owing to slight tetragonal latticedistortion of MgGa2O4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 121, '%', 1],[49.0, 196, '%', 1],[45.0, 4, 'K', 1]

Fe
###MgGa2O4 spinel barrier for magnetic tunnel junctions: coherent tunneling and low barrier height|Hiroaki Sukegawa,Yushi Kato,Mohamed Belmoubarik,P. -H. Cheng,Tadaomi Daibou,Naoharu Shimomura,Yuuzo Kamiguchi,Junichi Ito,Hiroaki Yoda,Tadakatsu Ohkubo,Seiji Mitani,Kazuhiro Hono###
(1052262, 1052262)
 The MgGa2O4 layer had a spinel structure and it showed goodlattice matching with the Fe layers owing to slight tetragonal latticedistortion of MgGa2O4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 121, '%', 1],[82.0, 196, '%', 1],[78.0, 4, 'K', 1]

MgGa2O4
###MgGa2O4 spinel barrier for magnetic tunnel junctions: coherent tunneling and low barrier height|Hiroaki Sukegawa,Yushi Kato,Mohamed Belmoubarik,P. -H. Cheng,Tadaomi Daibou,Naoharu Shimomura,Yuuzo Kamiguchi,Junichi Ito,Hiroaki Yoda,Tadakatsu Ohkubo,Seiji Mitani,Kazuhiro Hono###
(1052281, 1052285)
 The MgGa2O4 layer had a spinel structure and it showed goodlattice matching with the Fe layers owing to slight tetragonal latticedistortion of MgGa2O4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 121, '%', 1],[101.0, 196, '%', 1],[97.0, 4, 'K', 1]

MgGa2O4
###MgGa2O4 spinel barrier for magnetic tunnel junctions: coherent tunneling and low barrier height|Hiroaki Sukegawa,Yushi Kato,Mohamed Belmoubarik,P. -H. Cheng,Tadaomi Daibou,Naoharu Shimomura,Yuuzo Kamiguchi,Junichi Ito,Hiroaki Yoda,Tadakatsu Ohkubo,Seiji Mitani,Kazuhiro Hono###
(1052326, 1052330)
 Barrier thickness dependence of the tunneling resistanceand current-voltage characteristics revealed that the barrier height of theMgGa2O4 barrier is much lower than that in an MgAl2O4 barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 121, '%', 2],[146.0, 196, '%', 2],[142.0, 4, 'K', 2]

MgAl2O4
###MgGa2O4 spinel barrier for magnetic tunnel junctions: coherent tunneling and low barrier height|Hiroaki Sukegawa,Yushi Kato,Mohamed Belmoubarik,P. -H. Cheng,Tadaomi Daibou,Naoharu Shimomura,Yuuzo Kamiguchi,Junichi Ito,Hiroaki Yoda,Tadakatsu Ohkubo,Seiji Mitani,Kazuhiro Hono###
(1052348, 1052352)
 Barrier thickness dependence of the tunneling resistanceand current-voltage characteristics revealed that the barrier height of theMgGa2O4 barrier is much lower than that in an MgAl2O4 barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0.14285714285714285,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 121, '%', 2],[168.0, 196, '%', 2],[164.0, 4, 'K', 2]

Ga
###MgGa2O4 spinel barrier for magnetic tunnel junctions: coherent tunneling and low barrier height|Hiroaki Sukegawa,Yushi Kato,Mohamed Belmoubarik,P. -H. Cheng,Tadaomi Daibou,Naoharu Shimomura,Yuuzo Kamiguchi,Junichi Ito,Hiroaki Yoda,Tadakatsu Ohkubo,Seiji Mitani,Kazuhiro Hono###
(1052370, 1052370)
 This studydemonstrates the potential of Ga-based spinel oxides for MTJ barriers having alarge TMR ratio at a low resistance area product.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[200.0, 121, '%', 3],[190.0, 196, '%', 3],[186.0, 4, 'K', 3]

GaAs
###Positive Quantum Magnetoresistance in Tilted Magnetic Field|William Mayer,Areg Ghazaryan,Pouyan Ghaemi,Sergey Vitkalov,A. A. Bykov###
(1052457, 1052458)
 Transport properties of highly mobile 2D electrons are studied in symmetricGaAs quantum wells placed in titled magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 2, 'D', 0],[46.0, 2, 'D', 1]

GaAs
###Positive Quantum Magnetoresistance in Tilted Magnetic Field|William Mayer,Areg Ghazaryan,Pouyan Ghaemi,Sergey Vitkalov,A. A. Bykov###
(1052731, 1052732)
Theoretical estimations indicate that in the presence of spin-orbitalinteraction the elastic impurity scattering provides significant contributionto the spin mixing in GaAs quantum wells at high filling factors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[287.0, 2, 'D', 6],[227.0, 2, 'D', 5]

(FI)
###Magnetic-proximity-induced magnetoresistance on topological insulators|Takahiro Chiba,Saburo Takahashi,Gerrit E. W. Bauer###
(1052841, 1052844)
 We theoretically study the magnetoresistance (MR) of two-dimensional masslessDirac electrons as found on the surface of three-dimensional topologicalinsulators (3D TIs) that is capped by a ferromagnetic insulator (FI).
Featurization successful!
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FI
###Magnetic-proximity-induced magnetoresistance on topological insulators|Takahiro Chiba,Saburo Takahashi,Gerrit E. W. Bauer###
(1053073, 1053074)
 On the other hand, we do find anin-plane MR and planar Hall effect in the presence of magnetic disorder alignedwith the FI magnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

IFI
###Magnetic-proximity-induced magnetoresistance on topological insulators|Takahiro Chiba,Saburo Takahashi,Gerrit E. W. Bauer###
(1053099, 1053101)
 Our results may help understand recent transportmeasurements on T<missing VAR>IFI systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaBi
###Evidence of topological insulator state in the semimetal LaBi|R. Lou,B. -B. Fu,Q. N. Xu,P. -J. Guo,L. -Y. Kong,L. -K. Zeng,J. -Z. Ma,P. Richard,C. Fang,Y. -B. Huang,S. -S. Sun,Q. Wang,L. Wang,Y. -G. Shi,H. C. Lei,K. Liu,H. M. Weng,T. Qian,H. Ding,S. -C. Wang###
(1053130, 1053131)
Evidence of topological insulator state in the semimetal LaBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 117, ',', 5]

LaBi
###Evidence of topological insulator state in the semimetal LaBi|R. Lou,B. -B. Fu,Q. N. Xu,P. -J. Guo,L. -Y. Kong,L. -K. Zeng,J. -Z. Ma,P. Richard,C. Fang,Y. -B. Huang,S. -S. Sun,Q. Wang,L. Wang,Y. -G. Shi,H. C. Lei,K. Liu,H. M. Weng,T. Qian,H. Ding,S. -C. Wang###
(1053179, 1053180)
 By employing angle-resolved photoemission spectroscopy combined withfirst-principles calculations, we performed a systematic investigation on theelectronic structure of LaBi, which exhibits extremely large magnetoresistance(XMR), and is theoretically predicted to possess band anticrossing withnontrivial topological properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 117, ',', 4]

LaSb
###Evidence of topological insulator state in the semimetal LaBi|R. Lou,B. -B. Fu,Q. N. Xu,P. -J. Guo,L. -Y. Kong,L. -K. Zeng,J. -Z. Ma,P. Richard,C. Fang,Y. -B. Huang,S. -S. Sun,Q. Wang,L. Wang,Y. -G. Shi,H. C. Lei,K. Liu,H. M. Weng,T. Qian,H. Ding,S. -C. Wang###
(1053263, 1053264)
 Here, the observations of the Fermi-surfacetopology and band dispersions are similar to previous studies on LaSb [Phys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 117, ',', 3]

LaBi
###Evidence of topological insulator state in the semimetal LaBi|R. Lou,B. -B. Fu,Q. N. Xu,P. -J. Guo,L. -Y. Kong,L. -K. Zeng,J. -Z. Ma,P. Richard,C. Fang,Y. -B. Huang,S. -S. Sun,Q. Wang,L. Wang,Y. -G. Shi,H. C. Lei,K. Liu,H. M. Weng,T. Qian,H. Ding,S. -C. Wang###
(1053383, 1053384)
 The odd number of massless Dirac cones suggests that LaBiis analogous to the time-reversal Z<missing VAR>2 nontrivial topological insulator.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 117, ',', 1]

ZrTe5
###Anomalous Hall Effect in ZrTe5|Tian Liang,Jingjing Lin,Quinn Gibson,Minhao Liu,Wudi Wang,Hongyu Xiong,Jonathan A. Sobota,Makoto Hashimoto,Patrick S. Kirchmann,Zhi-Xun Shen,R. J. Cava,N. P. Ong###
(1053489, 1053491)
Anomalous Hall Effect in ZrTe5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 3, 'D', 2]

ZrTe5
###Anomalous Hall Effect in ZrTe5|Tian Liang,Jingjing Lin,Quinn Gibson,Minhao Liu,Wudi Wang,Hongyu Xiong,Jonathan A. Sobota,Makoto Hashimoto,Patrick S. Kirchmann,Zhi-Xun Shen,R. J. Cava,N. P. Ong###
(1053494, 1053496)
 ZrTe5 has been of recent interest as a potential Dirac/Weyl semimetalmaterial.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 3, 'D', 1]

H
###Anomalous Hall Effect in ZrTe5|Tian Liang,Jingjing Lin,Quinn Gibson,Minhao Liu,Wudi Wang,Hongyu Xiong,Jonathan A. Sobota,Makoto Hashimoto,Patrick S. Kirchmann,Zhi-Xun Shen,R. J. Cava,N. P. Ong###
(1053594, 1053594)
 A clear anomalous Hall effect (AHE) was detected forevery sample, with no magnetic ordering observed in the system to theexperimental sensitivity of torque magnetometry.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 3, 'D', 1]

H
###Anomalous Hall Effect in ZrTe5|Tian Liang,Jingjing Lin,Quinn Gibson,Minhao Liu,Wudi Wang,Hongyu Xiong,Jonathan A. Sobota,Makoto Hashimoto,Patrick S. Kirchmann,Zhi-Xun Shen,R. J. Cava,N. P. Ong###
(1053648, 1053648)
 Interestingly, the AHE<missing VAR> takeslarge values when the magnetic field is rotated in-plane, with the valuesvanishing above sim 60 K where the negative longitudinal magnetoresistance(LMR) also disappears.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 3, 'D', 2]

K
###Anomalous Hall Effect in ZrTe5|Tian Liang,Jingjing Lin,Quinn Gibson,Minhao Liu,Wudi Wang,Hongyu Xiong,Jonathan A. Sobota,Makoto Hashimoto,Patrick S. Kirchmann,Zhi-Xun Shen,R. J. Cava,N. P. Ong###
(1053690, 1053690)
 Interestingly, the AHE<missing VAR> takeslarge values when the magnetic field is rotated in-plane, with the valuesvanishing above sim 60 K where the negative longitudinal magnetoresistance(LMR) also disappears.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 3, 'D', 2]

FIB
###Observation of quantum oscillations in FIB fabricated nanowires of topological insulator (Bi2Se3)|Biplab Bhattacharyya,Alka Sharma,V P S Awana,A. K. Srivastava,T. D. Senguttuvan,Sudhir Husale###
(1053773, 1053775)
Observation of quantum oscillations in FIB fabricated nanowires of topological insulator (Bi2Se3).
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(Bi2Se3)
###Observation of quantum oscillations in FIB fabricated nanowires of topological insulator (Bi2Se3)|Biplab Bhattacharyya,Alka Sharma,V P S Awana,A. K. Srivastava,T. D. Senguttuvan,Sudhir Husale###
(1053787, 1053792)
Observation of quantum oscillations in FIB fabricated nanowires of topological insulator (Bi2Se3).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Observation of quantum oscillations in FIB fabricated nanowires of topological insulator (Bi2Se3)|Biplab Bhattacharyya,Alka Sharma,V P S Awana,A. K. Srivastava,T. D. Senguttuvan,Sudhir Husale###
(1053816, 1053816)
 Since last few years, research based on topological insulators (T<missing VAR>I) is ingreat interests due to intrinsic exotic fundamental properties and futurepotential applications such as quantum computers or spintronics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Observation of quantum oscillations in FIB fabricated nanowires of topological insulator (Bi2Se3)|Biplab Bhattacharyya,Alka Sharma,V P S Awana,A. K. Srivastava,T. D. Senguttuvan,Sudhir Husale###
(1053870, 1053870)
 Thefabrication of T<missing VAR>I nanodevices and study on their transport properties mostlyfocused on high quality crystalline nanowires or nanoribbons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Se3
###Observation of quantum oscillations in FIB fabricated nanowires of topological insulator (Bi2Se3)|Biplab Bhattacharyya,Alka Sharma,V P S Awana,A. K. Srivastava,T. D. Senguttuvan,Sudhir Husale###
(1053919, 1053922)
 Here we reportrobust approach of Bi2Se3 nanowire formation from deposited flakes using ionbeam milling method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Se3
###Observation of quantum oscillations in FIB fabricated nanowires of topological insulator (Bi2Se3)|Biplab Bhattacharyya,Alka Sharma,V P S Awana,A. K. Srivastava,T. D. Senguttuvan,Sudhir Husale###
(1053950, 1053953)
 The fabricated Bi2Se3 nanowire devices have been employedto investigate the robustness of topological surface state (T<missing VAR>SS) to gallium iondoping and any deformation in the material due to fabrication tools.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Observation of quantum oscillations in FIB fabricated nanowires of topological insulator (Bi2Se3)|Biplab Bhattacharyya,Alka Sharma,V P S Awana,A. K. Srivastava,T. D. Senguttuvan,Sudhir Husale###
(1053985, 1053985)
 The fabricated Bi2Se3 nanowire devices have been employedto investigate the robustness of topological surface state (T<missing VAR>SS) to gallium iondoping and any deformation in the material due to fabrication tools.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Observation of quantum oscillations in FIB fabricated nanowires of topological insulator (Bi2Se3)|Biplab Bhattacharyya,Alka Sharma,V P S Awana,A. K. Srivastava,T. D. Senguttuvan,Sudhir Husale###
(1054078, 1054078)
 The resistance versus magnetic field curves have been studiedand compared with Aharonov-Bohm (AB) interference effects which furtherdemonstrate the transport through T<missing VAR>SS.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SS
###Observation of quantum oscillations in FIB fabricated nanowires of topological insulator (Bi2Se3)|Biplab Bhattacharyya,Alka Sharma,V P S Awana,A. K. Srivastava,T. D. Senguttuvan,Sudhir Husale###
(1054099, 1054100)
 The resistance versus magnetic field curves have been studiedand compared with Aharonov-Bohm (AB) interference effects which furtherdemonstrate the transport through T<missing VAR>SS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Observation of quantum oscillations in FIB fabricated nanowires of topological insulator (Bi2Se3)|Biplab Bhattacharyya,Alka Sharma,V P S Awana,A. K. Srivastava,T. D. Senguttuvan,Sudhir Husale###
(1054157, 1054157)
 The fabrication route and observedelectronic transport properties indicate clear quantum oscillations and can beexploited further in studying the exotic electronic properties associated withT<missing VAR>I based nanodevices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Giant microwave-induced $B$-periodic magnetoresistance oscillations in a two-dimensional electron gas with a bridged-gate tunnel point contact|A. D. Levin,S. A. Mikhailov,G. M. Gusev,Z. D. Kvon,E. E. Rodyakina,A. V. Latyshev###
(1054178, 1054178)
Giant microwave-induced B-periodic magnetoresistance oscillations in a two-dimensional electron gas with a bridged-gate tunnel point contact.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 700, '%', 2],[333.0, 2, 'DEG', 5]

B
###Giant microwave-induced $B$-periodic magnetoresistance oscillations in a two-dimensional electron gas with a bridged-gate tunnel point contact|A. D. Levin,S. A. Mikhailov,G. M. Gusev,Z. D. Kvon,E. E. Rodyakina,A. V. Latyshev###
(1054277, 1054277)
 The resistance reveals giant B-periodic oscillations with therelative amplitude Delta R/R of up to 700% resulting from the propagationand interference of the edge magnetoplasmons (EMPs) in the sample.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 700, '%', 0],[234.0, 2, 'DEG', 3]

B
###Giant microwave-induced $B$-periodic magnetoresistance oscillations in a two-dimensional electron gas with a bridged-gate tunnel point contact|A. D. Levin,S. A. Mikhailov,G. M. Gusev,Z. D. Kvon,E. E. Rodyakina,A. V. Latyshev###
(1054401, 1054401)
 We have also analyzed theoscillation periods Delta B of the resistance oscillations and, comparingthe data with the EMP theory, extracted the EMP interference length L<missing VAR>.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 700, '%', 2],[110.0, 2, 'DEG', 1]

P
###Giant microwave-induced $B$-periodic magnetoresistance oscillations in a two-dimensional electron gas with a bridged-gate tunnel point contact|A. D. Levin,S. A. Mikhailov,G. M. Gusev,Z. D. Kvon,E. E. Rodyakina,A. V. Latyshev###
(1054427, 1054427)
 We have also analyzed theoscillation periods Delta B of the resistance oscillations and, comparingthe data with the EMP theory, extracted the EMP interference length L<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 700, '%', 2],[84.0, 2, 'DEG', 1]

P
###Giant microwave-induced $B$-periodic magnetoresistance oscillations in a two-dimensional electron gas with a bridged-gate tunnel point contact|A. D. Levin,S. A. Mikhailov,G. M. Gusev,Z. D. Kvon,E. E. Rodyakina,A. V. Latyshev###
(1054438, 1054438)
 We have also analyzed theoscillation periods Delta B of the resistance oscillations and, comparingthe data with the EMP theory, extracted the EMP interference length L<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 700, '%', 2],[73.0, 2, 'DEG', 1]

II
###Three-Dimensional Electronic Structure of type-II Weyl Semimetal WTe$_2$|Domenico Di Sante,Pranab Kumar Das,C. Bigi,Z. Ergönenc,N. Gürtler,J. A. Krieger,T. Schmitt,M. N. Ali,G. Rossi,R. Thomale,C. Franchini,S. Picozzi,J. Fujii,V. N. Strocov,G. Sangiovanni,I. Vobornik,R. J. Cava,G. Panaccione###
(1054937, 1054938)
Three-Dimensional Electronic Structure of type-II Weyl Semimetal WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Three-Dimensional Electronic Structure of type-II Weyl Semimetal WTe$_2$|Domenico Di Sante,Pranab Kumar Das,C. Bigi,Z. Ergönenc,N. Gürtler,J. A. Krieger,T. Schmitt,M. N. Ali,G. Rossi,R. Thomale,C. Franchini,S. Picozzi,J. Fujii,V. N. Strocov,G. Sangiovanni,I. Vobornik,R. J. Cava,G. Panaccione###
(1054944, 1054946)
Three-Dimensional Electronic Structure of type-II Weyl Semimetal WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Three-Dimensional Electronic Structure of type-II Weyl Semimetal WTe$_2$|Domenico Di Sante,Pranab Kumar Das,C. Bigi,Z. Ergönenc,N. Gürtler,J. A. Krieger,T. Schmitt,M. N. Ali,G. Rossi,R. Thomale,C. Franchini,S. Picozzi,J. Fujii,V. N. Strocov,G. Sangiovanni,I. Vobornik,R. J. Cava,G. Panaccione###
(1054997, 1054999)
 By combining bulk sensitive soft-X<missing VAR>-ray angular-resolved photoemissionspectroscopy and accurate first-principles calculations we explored the bulkelectronic properties of WTe2, a candidate type-II Weyl semimetal featuringa large non-saturating magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Three-Dimensional Electronic Structure of type-II Weyl Semimetal WTe$_2$|Domenico Di Sante,Pranab Kumar Das,C. Bigi,Z. Ergönenc,N. Gürtler,J. A. Krieger,T. Schmitt,M. N. Ali,G. Rossi,R. Thomale,C. Franchini,S. Picozzi,J. Fujii,V. N. Strocov,G. Sangiovanni,I. Vobornik,R. J. Cava,G. Panaccione###
(1055008, 1055009)
 By combining bulk sensitive soft-X<missing VAR>-ray angular-resolved photoemissionspectroscopy and accurate first-principles calculations we explored the bulkelectronic properties of WTe2, a candidate type-II Weyl semimetal featuringa large non-saturating magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Three-Dimensional Electronic Structure of type-II Weyl Semimetal WTe$_2$|Domenico Di Sante,Pranab Kumar Das,C. Bigi,Z. Ergönenc,N. Gürtler,J. A. Krieger,T. Schmitt,M. N. Ali,G. Rossi,R. Thomale,C. Franchini,S. Picozzi,J. Fujii,V. N. Strocov,G. Sangiovanni,I. Vobornik,R. J. Cava,G. Panaccione###
(1055191, 1055191)
 The measured Fermisurface is characterized by two well-separated electron and hole pockets ateither side of the Gamma point, differently from previous more surfacesensitive ARPES experiments that additionally found a significant quasiparticleweight at the zone center.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Three-Dimensional Electronic Structure of type-II Weyl Semimetal WTe$_2$|Domenico Di Sante,Pranab Kumar Das,C. Bigi,Z. Ergönenc,N. Gürtler,J. A. Krieger,T. Schmitt,M. N. Ali,G. Rossi,R. Thomale,C. Franchini,S. Picozzi,J. Fujii,V. N. Strocov,G. Sangiovanni,I. Vobornik,R. J. Cava,G. Panaccione###
(1055245, 1055247)
 Moreover, we observe a significant sensitivity ofthe bulk electronic structure of WTe2 around the Fermi level to electroniccorrelations and renormalizations due to self-energy effects, previouslyneglected in first-principles descriptions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

He
###Fabrication and electrical transport properties of embedded graphite microwires in a diamond matrix|J. Barzola-Quiquia,T. Lühmann,R. Wunderlich,M. Stiller,M. Zoraghi,J. Meijer,P. Esquinazi,J. Böttner,I. Estrela-Lopis###
(1055380, 1055380)
 Micrometer width and nanometer thick wires with different shapes wereproduced approx 3upmum<missing VAR> below the surface of a diamond crystal using amicrobeam of He ions with 1.8MeV energy.
Featurization terminated normally.
0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Fabrication and electrical transport properties of embedded graphite microwires in a diamond matrix|J. Barzola-Quiquia,T. Lühmann,R. Wunderlich,M. Stiller,M. Zoraghi,J. Meijer,P. Esquinazi,J. Böttner,I. Estrela-Lopis###
(1055388, 1055388)
 Micrometer width and nanometer thick wires with different shapes wereproduced approx 3upmum<missing VAR> below the surface of a diamond crystal using amicrobeam of He ions with 1.8MeV energy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Fabrication and electrical transport properties of embedded graphite microwires in a diamond matrix|J. Barzola-Quiquia,T. Lühmann,R. Wunderlich,M. Stiller,M. Zoraghi,J. Meijer,P. Esquinazi,J. Böttner,I. Estrela-Lopis###
(1055414, 1055414)
 Initial samples are amorphous andafter annealing at T<missing VAR>approx 1475K, the wires crystallized into agraphite-like structures, according to confocal Raman spectroscopymeasurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Fabrication and electrical transport properties of embedded graphite microwires in a diamond matrix|J. Barzola-Quiquia,T. Lühmann,R. Wunderlich,M. Stiller,M. Zoraghi,J. Meijer,P. Esquinazi,J. Böttner,I. Estrela-Lopis###
(1055516, 1055516)
 The electrical resistivity at room temperature is only one orderof magnitude larger than the in-plane resistivity of highly oriented pyrolyticbulk graphite and shows a small resistivity ratio(rho(2rm K)/rho(315rmK) approx 1.275).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Fabrication and electrical transport properties of embedded graphite microwires in a diamond matrix|J. Barzola-Quiquia,T. Lühmann,R. Wunderlich,M. Stiller,M. Zoraghi,J. Meijer,P. Esquinazi,J. Böttner,I. Estrela-Lopis###
(1055525, 1055525)
 The electrical resistivity at room temperature is only one orderof magnitude larger than the in-plane resistivity of highly oriented pyrolyticbulk graphite and shows a small resistivity ratio(rho(2rm K)/rho(315rmK) approx 1.275).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Fabrication and electrical transport properties of embedded graphite microwires in a diamond matrix|J. Barzola-Quiquia,T. Lühmann,R. Wunderlich,M. Stiller,M. Zoraghi,J. Meijer,P. Esquinazi,J. Böttner,I. Estrela-Lopis###
(1055546, 1055546)
 A small negative magnetoresistance below T<missing VAR>200K wasmeasured and can be well understood taking spin-dependent scattering processesinto account.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(Bi2Se3)
###Evidence of robust 2D transport and Efros-Shklovskii variable range hopping in disordered topological insulator (Bi2Se3) nanowires|Biplab Bhattacharyya,Alka Sharma,Bhavesh Sinha,Kunjal Shah,Suhas Jejurikar,T. D. Senguttuvan,Sudhir Husale###
(1055667, 1055672)
Evidence of robust 2D transport and Efros-Shklovskii variable range hopping in disordered topological insulator (Bi2Se3) nanowires.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 2, 'D', 0],[153.0, 20, 'nm', 3],[219.0, 2, 'D', 4]

(FIB)
###Evidence of robust 2D transport and Efros-Shklovskii variable range hopping in disordered topological insulator (Bi2Se3) nanowires|Biplab Bhattacharyya,Alka Sharma,Bhavesh Sinha,Kunjal Shah,Suhas Jejurikar,T. D. Senguttuvan,Sudhir Husale###
(1055706, 1055710)
 We report the experimental observation of variable range hopping conductionin focused-ion-beam (FIB) fabricated ultra-narrow nanowires of topologicalinsulator (Bi2Se3).
Featurization successful!
0,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 2, 'D', 1],[115.0, 20, 'nm', 2],[181.0, 2, 'D', 3]

(Bi2Se3)
###Evidence of robust 2D transport and Efros-Shklovskii variable range hopping in disordered topological insulator (Bi2Se3) nanowires|Biplab Bhattacharyya,Alka Sharma,Bhavesh Sinha,Kunjal Shah,Suhas Jejurikar,T. D. Senguttuvan,Sudhir Husale###
(1055727, 1055732)
 We report the experimental observation of variable range hopping conductionin focused-ion-beam (FIB) fabricated ultra-narrow nanowires of topologicalinsulator (Bi2Se3).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 2, 'D', 1],[93.0, 20, 'nm', 2],[159.0, 2, 'D', 3]

As
###Transport Coefficients of Dirac Ferromagnet: Effects of Vertex Corrections|Junji Fujimoto###
(1056006, 1056006)
 As a strongly spin-orbit coupled metallic model with ferromagnetism, we haveconsidered an extended Stoner model to the relativistic regime, named Diracferromagnet in three dimensions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 90, ',', 3]

In
###Transport Coefficients of Dirac Ferromagnet: Effects of Vertex Corrections|Junji Fujimoto###
(1056068, 1056068)
  In the previous paper[Phys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 90, ',', 2]

B
###Transport Coefficients of Dirac Ferromagnet: Effects of Vertex Corrections|Junji Fujimoto###
(1056082, 1056082)
 B 90, 214418 (2014)], we studied thetransport properties giving rise to the anisotropic magnetoresistance(AMR) andthe anomalous Hall effect(AHE) with the impurity potential being taken intoaccount only as the self-energy.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 90, ',', 0]

H
###Transport Coefficients of Dirac Ferromagnet: Effects of Vertex Corrections|Junji Fujimoto###
(1056135, 1056135)
 B 90, 214418 (2014)], we studied thetransport properties giving rise to the anisotropic magnetoresistance(AMR) andthe anomalous Hall effect(AHE) with the impurity potential being taken intoaccount only as the self-energy.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 90, ',', 0]

(VCs)
###Transport Coefficients of Dirac Ferromagnet: Effects of Vertex Corrections|Junji Fujimoto###
(1056181, 1056184)
  The effects of the vertex corrections(VCs) to AMR and AHE<missing VAR> are reported inthis paper.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 90, ',', 1]

H
###Transport Coefficients of Dirac Ferromagnet: Effects of Vertex Corrections|Junji Fujimoto###
(1056195, 1056195)
  The effects of the vertex corrections(VCs) to AMR and AHE<missing VAR> are reported inthis paper.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 90, ',', 1]

VCs
###Transport Coefficients of Dirac Ferromagnet: Effects of Vertex Corrections|Junji Fujimoto###
(1056233, 1056234)
  AMR is found not to change quantitatively when the VCs is considered,although the transport lifetime is different from the one-electron lifetime andthe charge current includes additional contributions from the correlation withspin currents.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 90, ',', 2]

H
###Transport Coefficients of Dirac Ferromagnet: Effects of Vertex Corrections|Junji Fujimoto###
(1056315, 1056315)
  The side-jump and the skew-scattering contributions to AHE<missing VAR> are alsocalculated.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[231.0, 90, ',', 3]

B
###Emergence of Gapped Bulk and Metallic Side Walls in the Zeroth Landau level in Dirac and Weyl semimetals|Ching-Kit Chan,Patrick A. Lee###
(1056588, 1056588)
 Our result shows that the zeroth Landau levelsanticross when the magnetic axis is perpendicular to the Dirac/Weyl nodeseparation and when the inverse magnetic length l<missing VAR>B-1 is comparable to thenode separation scale Delta k<missing VAR>.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, -1, '>', 1],[99.0, -1, '<', 1]

B
###Emergence of Gapped Bulk and Metallic Side Walls in the Zeroth Landau level in Dirac and Weyl semimetals|Ching-Kit Chan,Patrick A. Lee###
(1056674, 1056674)
 The induced bulk gap increases rapidly beyonda threshold field in Weyl semimetals, but has no threshold and is non-monotonicin Dirac systems due to the crossover between l<missing VAR>B-1>Delta k<missing VAR> andl<missing VAR>B-1<Delta k<missing VAR> regions.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[1.0, -1, '>', 0],[13.0, -1, '<', 0]

B
###Emergence of Gapped Bulk and Metallic Side Walls in the Zeroth Landau level in Dirac and Weyl semimetals|Ching-Kit Chan,Patrick A. Lee###
(1056686, 1056686)
 The induced bulk gap increases rapidly beyonda threshold field in Weyl semimetals, but has no threshold and is non-monotonicin Dirac systems due to the crossover between l<missing VAR>B-1>Delta k<missing VAR> andl<missing VAR>B-1<Delta k<missing VAR> regions.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, -1, '>', 0],[1.0, -1, '<', 0]

MoSi
###Superconducting MoSi nanowires|J. S. Lehtinen,A. Kemppinen,E. Mykkänen,M. Prunnila,A. J. Manninen###
(1056773, 1056774)
Superconducting MoSi nanowires.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 42, 'to', 5],[147.0, 79, 'nm', 5]

In
###Superconducting MoSi nanowires|J. S. Lehtinen,A. Kemppinen,E. Mykkänen,M. Prunnila,A. J. Manninen###
(1056959, 1056959)
 In the smallest diameterwire and at temperatures well below the superconducting critical temperature,we observe residual resistance and negative magnetoresistance, which can beconsidered as fingerprints of quantum phase slips.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 42, 'to', 1],[38.0, 79, 'nm', 1]

NiO
###Spin torque control of antiferromagnetic moments in NiO|Takahiro Moriyama,Kent Oda,Teruo Ono###
(1057049, 1057050)
Spin torque control of antiferromagnetic moments in NiO.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiO
###Spin torque control of antiferromagnetic moments in NiO|Takahiro Moriyama,Kent Oda,Teruo Ono###
(1057244, 1057245)
 Here weshow that the magnetic moments in NiO, a typical natural antiferromagnet, canindeed be controlled by the spin torque with a relatively small electriccurrent density (5 x<missing VAR> 107 A/cm2) and their orientation is detected by thetransverse resistance resulting from the spin Hall magnetoresistance .
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs/AlGaAs
###Low-Frequency Microwave Induced Quantum Oscillations in A Two-Dimensional Electron System|Jian Mi,Huiying Liu,Junren Shi,L. N. Pfeiffer,K. W. West,K. W. Baldwin,Chi Zhang###
(1057452, 1057457)
 We study the magnetoresistance of an ultrahigh mobility GaAs/AlGaAstwo-dimensional electron sample in a weak magnetic field under low-frequency (f<missing VAR>< 20 GHz) microwave (M<missing VAR>W) irradiation.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[32.0, 20, 'GHz', 0],[108.0, 4, 'GHz', 2]

W
###Low-Frequency Microwave Induced Quantum Oscillations in A Two-Dimensional Electron System|Jian Mi,Huiying Liu,Junren Shi,L. N. Pfeiffer,K. W. West,K. W. Baldwin,Chi Zhang###
(1057496, 1057496)
 We study the magnetoresistance of an ultrahigh mobility GaAs/AlGaAstwo-dimensional electron sample in a weak magnetic field under low-frequency (f<missing VAR>< 20 GHz) microwave (M<missing VAR>W) irradiation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 20, 'GHz', 0],[69.0, 4, 'GHz', 2]

W
###Low-Frequency Microwave Induced Quantum Oscillations in A Two-Dimensional Electron System|Jian Mi,Huiying Liu,Junren Shi,L. N. Pfeiffer,K. W. West,K. W. Baldwin,Chi Zhang###
(1057513, 1057513)
 We observe that with decreasing M<missing VAR>Wfrequency, microwave induced resistance oscillations (MIRO) damp andmulti-photon processes become dominant.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 20, 'GHz', 1],[52.0, 4, 'GHz', 1]

O
###Low-Frequency Microwave Induced Quantum Oscillations in A Two-Dimensional Electron System|Jian Mi,Huiying Liu,Junren Shi,L. N. Pfeiffer,K. W. West,K. W. Baldwin,Chi Zhang###
(1057531, 1057531)
 We observe that with decreasing M<missing VAR>Wfrequency, microwave induced resistance oscillations (MIRO) damp andmulti-photon processes become dominant.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 20, 'GHz', 1],[34.0, 4, 'GHz', 1]

At
###Low-Frequency Microwave Induced Quantum Oscillations in A Two-Dimensional Electron System|Jian Mi,Huiying Liu,Junren Shi,L. N. Pfeiffer,K. W. West,K. W. Baldwin,Chi Zhang###
(1057550, 1057550)
 At very low M<missing VAR>W frequency (f<missing VAR> < 4 GHz),MIRO disappears gradually and a new SdH-like oscillation develops.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 20, 'GHz', 2],[15.0, 4, 'GHz', 0]

W
###Low-Frequency Microwave Induced Quantum Oscillations in A Two-Dimensional Electron System|Jian Mi,Huiying Liu,Junren Shi,L. N. Pfeiffer,K. W. West,K. W. Baldwin,Chi Zhang###
(1057557, 1057557)
 At very low M<missing VAR>W frequency (f<missing VAR> < 4 GHz),MIRO disappears gradually and a new SdH-like oscillation develops.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 20, 'GHz', 2],[8.0, 4, 'GHz', 0]

O
###Low-Frequency Microwave Induced Quantum Oscillations in A Two-Dimensional Electron System|Jian Mi,Huiying Liu,Junren Shi,L. N. Pfeiffer,K. W. West,K. W. Baldwin,Chi Zhang###
(1057573, 1057573)
 At very low M<missing VAR>W frequency (f<missing VAR> < 4 GHz),MIRO disappears gradually and a new SdH-like oscillation develops.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 20, 'GHz', 2],[8.0, 4, 'GHz', 0]

H
###Low-Frequency Microwave Induced Quantum Oscillations in A Two-Dimensional Electron System|Jian Mi,Huiying Liu,Junren Shi,L. N. Pfeiffer,K. W. West,K. W. Baldwin,Chi Zhang###
(1057586, 1057586)
 At very low M<missing VAR>W frequency (f<missing VAR> < 4 GHz),MIRO disappears gradually and a new SdH-like oscillation develops.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 20, 'GHz', 2],[21.0, 4, 'GHz', 0]

HI
###Low-Frequency Microwave Induced Quantum Oscillations in A Two-Dimensional Electron System|Jian Mi,Huiying Liu,Junren Shi,L. N. Pfeiffer,K. W. West,K. W. Baldwin,Chi Zhang###
(1057632, 1057633)
 The analysisindicates that the new oscillation may originate from alternating Hall-fieldinduced resistance oscillations (ac-HIR<missing VAR>O), or can be viewed as a multi-photonprocess of MIRO in low M<missing VAR>W frequency limit.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 20, 'GHz', 3],[67.0, 4, 'GHz', 1]

O
###Low-Frequency Microwave Induced Quantum Oscillations in A Two-Dimensional Electron System|Jian Mi,Huiying Liu,Junren Shi,L. N. Pfeiffer,K. W. West,K. W. Baldwin,Chi Zhang###
(1057635, 1057635)
 The analysisindicates that the new oscillation may originate from alternating Hall-fieldinduced resistance oscillations (ac-HIR<missing VAR>O), or can be viewed as a multi-photonprocess of MIRO in low M<missing VAR>W frequency limit.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 20, 'GHz', 3],[70.0, 4, 'GHz', 1]

O
###Low-Frequency Microwave Induced Quantum Oscillations in A Two-Dimensional Electron System|Jian Mi,Huiying Liu,Junren Shi,L. N. Pfeiffer,K. W. West,K. W. Baldwin,Chi Zhang###
(1057663, 1057663)
 The analysisindicates that the new oscillation may originate from alternating Hall-fieldinduced resistance oscillations (ac-HIR<missing VAR>O), or can be viewed as a multi-photonprocess of MIRO in low M<missing VAR>W frequency limit.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[174.0, 20, 'GHz', 3],[98.0, 4, 'GHz', 1]

W
###Low-Frequency Microwave Induced Quantum Oscillations in A Two-Dimensional Electron System|Jian Mi,Huiying Liu,Junren Shi,L. N. Pfeiffer,K. W. West,K. W. Baldwin,Chi Zhang###
(1057670, 1057670)
 The analysisindicates that the new oscillation may originate from alternating Hall-fieldinduced resistance oscillations (ac-HIR<missing VAR>O), or can be viewed as a multi-photonprocess of MIRO in low M<missing VAR>W frequency limit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 20, 'GHz', 3],[105.0, 4, 'GHz', 1]

O
###Low-Frequency Microwave Induced Quantum Oscillations in A Two-Dimensional Electron System|Jian Mi,Huiying Liu,Junren Shi,L. N. Pfeiffer,K. W. West,K. W. Baldwin,Chi Zhang###
(1057697, 1057697)
 Our findings bridge thenon-equilibrium states of MIRO and HIR<missing VAR>O, which can be brought into a frame ofquantum tunneling junction model.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[208.0, 20, 'GHz', 4],[132.0, 4, 'GHz', 2]

HI
###Low-Frequency Microwave Induced Quantum Oscillations in A Two-Dimensional Electron System|Jian Mi,Huiying Liu,Junren Shi,L. N. Pfeiffer,K. W. West,K. W. Baldwin,Chi Zhang###
(1057701, 1057702)
 Our findings bridge thenon-equilibrium states of MIRO and HIR<missing VAR>O, which can be brought into a frame ofquantum tunneling junction model.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[212.0, 20, 'GHz', 4],[136.0, 4, 'GHz', 2]

O
###Low-Frequency Microwave Induced Quantum Oscillations in A Two-Dimensional Electron System|Jian Mi,Huiying Liu,Junren Shi,L. N. Pfeiffer,K. W. West,K. W. Baldwin,Chi Zhang###
(1057704, 1057704)
 Our findings bridge thenon-equilibrium states of MIRO and HIR<missing VAR>O, which can be brought into a frame ofquantum tunneling junction model.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[215.0, 20, 'GHz', 4],[139.0, 4, 'GHz', 2]

F
###Antiferromagnetic anisotropy determination by spin Hall magnetoresistance|Hua Wang,Dazhi Hou,Zhiyong Qiu,Takashi Kikkawa,Eiji Saitoh,Xiaofeng Jin###
(1057779, 1057779)
 An electric method for measuring magnetic anisotropy in antiferromagneticinsulators (AFIs) is proposed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(Pt)
###Antiferromagnetic anisotropy determination by spin Hall magnetoresistance|Hua Wang,Dazhi Hou,Zhiyong Qiu,Takashi Kikkawa,Eiji Saitoh,Xiaofeng Jin###
(1057816, 1057818)
, platinum (Pt), is deposited on an AFI, its resistanceshould be affected by the direction of the AFI N eel vector due to the spinHall magnetoresistance (SMR).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FI
###Antiferromagnetic anisotropy determination by spin Hall magnetoresistance|Hua Wang,Dazhi Hou,Zhiyong Qiu,Takashi Kikkawa,Eiji Saitoh,Xiaofeng Jin###
(1057830, 1057831)
, platinum (Pt), is deposited on an AFI, its resistanceshould be affected by the direction of the AFI N eel vector due to the spinHall magnetoresistance (SMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FI
###Antiferromagnetic anisotropy determination by spin Hall magnetoresistance|Hua Wang,Dazhi Hou,Zhiyong Qiu,Takashi Kikkawa,Eiji Saitoh,Xiaofeng Jin###
(1057856, 1057857)
, platinum (Pt), is deposited on an AFI, its resistanceshould be affected by the direction of the AFI N eel vector due to the spinHall magnetoresistance (SMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Antiferromagnetic anisotropy determination by spin Hall magnetoresistance|Hua Wang,Dazhi Hou,Zhiyong Qiu,Takashi Kikkawa,Eiji Saitoh,Xiaofeng Jin###
(1057859, 1057859)
, platinum (Pt), is deposited on an AFI, its resistanceshould be affected by the direction of the AFI N eel vector due to the spinHall magnetoresistance (SMR).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Antiferromagnetic anisotropy determination by spin Hall magnetoresistance|Hua Wang,Dazhi Hou,Zhiyong Qiu,Takashi Kikkawa,Eiji Saitoh,Xiaofeng Jin###
(1057879, 1057879)
, platinum (Pt), is deposited on an AFI, its resistanceshould be affected by the direction of the AFI N eel vector due to the spinHall magnetoresistance (SMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FI
###Antiferromagnetic anisotropy determination by spin Hall magnetoresistance|Hua Wang,Dazhi Hou,Zhiyong Qiu,Takashi Kikkawa,Eiji Saitoh,Xiaofeng Jin###
(1057897, 1057898)
 Accordingly, the direction of the AFI N eelvector, which is affected by both the external magnetic field and the magneticanisotropy, is reflected in resistance of Pt.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Antiferromagnetic anisotropy determination by spin Hall magnetoresistance|Hua Wang,Dazhi Hou,Zhiyong Qiu,Takashi Kikkawa,Eiji Saitoh,Xiaofeng Jin###
(1057900, 1057900)
 Accordingly, the direction of the AFI N eelvector, which is affected by both the external magnetic field and the magneticanisotropy, is reflected in resistance of Pt.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Antiferromagnetic anisotropy determination by spin Hall magnetoresistance|Hua Wang,Dazhi Hou,Zhiyong Qiu,Takashi Kikkawa,Eiji Saitoh,Xiaofeng Jin###
(1057946, 1057946)
 Accordingly, the direction of the AFI N eelvector, which is affected by both the external magnetic field and the magneticanisotropy, is reflected in resistance of Pt.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Antiferromagnetic anisotropy determination by spin Hall magnetoresistance|Hua Wang,Dazhi Hou,Zhiyong Qiu,Takashi Kikkawa,Eiji Saitoh,Xiaofeng Jin###
(1057968, 1057968)
 The magnetic field angledependence of the resistance of Pt on AFI is calculated by consider- ing theSMR, which indicates that the antiferromagnetic anisotropy can be obtainedexperimentally by monitoring the Pt resistance in strong magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FI
###Antiferromagnetic anisotropy determination by spin Hall magnetoresistance|Hua Wang,Dazhi Hou,Zhiyong Qiu,Takashi Kikkawa,Eiji Saitoh,Xiaofeng Jin###
(1057973, 1057974)
 The magnetic field angledependence of the resistance of Pt on AFI is calculated by consider- ing theSMR, which indicates that the antiferromagnetic anisotropy can be obtainedexperimentally by monitoring the Pt resistance in strong magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Antiferromagnetic anisotropy determination by spin Hall magnetoresistance|Hua Wang,Dazhi Hou,Zhiyong Qiu,Takashi Kikkawa,Eiji Saitoh,Xiaofeng Jin###
(1057990, 1057990)
 The magnetic field angledependence of the resistance of Pt on AFI is calculated by consider- ing theSMR, which indicates that the antiferromagnetic anisotropy can be obtainedexperimentally by monitoring the Pt resistance in strong magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Antiferromagnetic anisotropy determination by spin Hall magnetoresistance|Hua Wang,Dazhi Hou,Zhiyong Qiu,Takashi Kikkawa,Eiji Saitoh,Xiaofeng Jin###
(1058022, 1058022)
 The magnetic field angledependence of the resistance of Pt on AFI is calculated by consider- ing theSMR, which indicates that the antiferromagnetic anisotropy can be obtainedexperimentally by monitoring the Pt resistance in strong magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt/Cr2O3
###Antiferromagnetic anisotropy determination by spin Hall magnetoresistance|Hua Wang,Dazhi Hou,Zhiyong Qiu,Takashi Kikkawa,Eiji Saitoh,Xiaofeng Jin###
(1058052, 1058057)
Calculations are performed for realistic systems such as Pt/Cr2O3, Pt/NiO, andPt/CoO.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Pt/NiO
###Antiferromagnetic anisotropy determination by spin Hall magnetoresistance|Hua Wang,Dazhi Hou,Zhiyong Qiu,Takashi Kikkawa,Eiji Saitoh,Xiaofeng Jin###
(1058060, 1058063)
Calculations are performed for realistic systems such as Pt/Cr2O3, Pt/NiO, andPt/CoO.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Pt/CoO
###Antiferromagnetic anisotropy determination by spin Hall magnetoresistance|Hua Wang,Dazhi Hou,Zhiyong Qiu,Takashi Kikkawa,Eiji Saitoh,Xiaofeng Jin###
(1058069, 1058072)
Calculations are performed for realistic systems such as Pt/Cr2O3, Pt/NiO, andPt/CoO.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Gd
###Temperature dependence of interlayer coupling in perpendicular magnetic tunnel junctions with GdOx barriers|T. Newhouse-Illige,Y. H. Xu,Y. H. Liu,S. Huang,H. Kato,C. Bi,M. Xu,B. J. LeRoy,W. G. Wang###
(1058105, 1058105)
Temperature dependence of interlayer coupling in perpendicular magnetic tunnel junctions with GdOx barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 14, '%', 3],[230.0, 80, 'K', 4]

GdO
###Temperature dependence of interlayer coupling in perpendicular magnetic tunnel junctions with GdOx barriers|T. Newhouse-Illige,Y. H. Xu,Y. H. Liu,S. Huang,H. Kato,C. Bi,M. Xu,B. J. LeRoy,W. G. Wang###
(1058121, 1058122)
 Perpendicular magnetic tunnel junctions with GdOX<missing VAR> tunneling barriers haveshown a unique voltage controllable interlayer magnetic coupling effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 14, '%', 2],[213.0, 80, 'K', 3]

GdO
###Temperature dependence of interlayer coupling in perpendicular magnetic tunnel junctions with GdOx barriers|T. Newhouse-Illige,Y. H. Xu,Y. H. Liu,S. Huang,H. Kato,C. Bi,M. Xu,B. J. LeRoy,W. G. Wang###
(1058166, 1058167)
 Herewe investigate the quality of the GdOX<missing VAR> barrier and the coupling mechanism inthese junctions by examining the temperature dependence of the tunnelingmagnetoresistance and the interlayer coupling from room temperature down to 11K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 14, '%', 1],[168.0, 80, 'K', 2]

K
###Temperature dependence of interlayer coupling in perpendicular magnetic tunnel junctions with GdOx barriers|T. Newhouse-Illige,Y. H. Xu,Y. H. Liu,S. Huang,H. Kato,C. Bi,M. Xu,B. J. LeRoy,W. G. Wang###
(1058227, 1058227)
 Herewe investigate the quality of the GdOX<missing VAR> barrier and the coupling mechanism inthese junctions by examining the temperature dependence of the tunnelingmagnetoresistance and the interlayer coupling from room temperature down to 11K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 14, '%', 1],[108.0, 80, 'K', 2]

AlO
###Temperature dependence of interlayer coupling in perpendicular magnetic tunnel junctions with GdOx barriers|T. Newhouse-Illige,Y. H. Xu,Y. H. Liu,S. Huang,H. Kato,C. Bi,M. Xu,B. J. LeRoy,W. G. Wang###
(1058292, 1058293)
 The barrier is shown to be of good quality with the spin independentconductance only contributing a small portion, 14%, to the total roomtemperature conductance, similar to AlOX<missing VAR> and MgO barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 14, '%', 0],[42.0, 80, 'K', 1]

MgO
###Temperature dependence of interlayer coupling in perpendicular magnetic tunnel junctions with GdOx barriers|T. Newhouse-Illige,Y. H. Xu,Y. H. Liu,S. Huang,H. Kato,C. Bi,M. Xu,B. J. LeRoy,W. G. Wang###
(1058298, 1058299)
 The barrier is shown to be of good quality with the spin independentconductance only contributing a small portion, 14%, to the total roomtemperature conductance, similar to AlOX<missing VAR> and MgO barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 14, '%', 0],[36.0, 80, 'K', 1]

Gd
###Temperature dependence of interlayer coupling in perpendicular magnetic tunnel junctions with GdOx barriers|T. Newhouse-Illige,Y. H. Xu,Y. H. Liu,S. Huang,H. Kato,C. Bi,M. Xu,B. J. LeRoy,W. G. Wang###
(1058392, 1058392)
 This non-trivial temperature dependence is notdescribed by previous models of interlayer coupling and may be due to the largeinduced magnetic moment of the Gd ions in the barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 14, '%', 2],[57.0, 80, 'K', 1]

SO
###Newton's second law in spin-orbit torque|Cong Son Ho,Seng Ghee Tan,Shun-Qing Shen,Mansoor B. A. Jalil###
(1058434, 1058435)
 Spin-orbit torque (SOT) refers to the excitation of magnetization dynamicsvia spin-orbit coupling under the application of a charged current.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Newton's second law in spin-orbit torque|Cong Son Ho,Seng Ghee Tan,Shun-Qing Shen,Mansoor B. A. Jalil###
(1058477, 1058477)
 In thiswork, we introduce a simple and intuitive description of the SOT<missing VAR> in terms ofspin force.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Newton's second law in spin-orbit torque|Cong Son Ho,Seng Ghee Tan,Shun-Qing Shen,Mansoor B. A. Jalil###
(1058503, 1058504)
 In thiswork, we introduce a simple and intuitive description of the SOT<missing VAR> in terms ofspin force.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Newton's second law in spin-orbit torque|Cong Son Ho,Seng Ghee Tan,Shun-Qing Shen,Mansoor B. A. Jalil###
(1058519, 1058519)
 In Rashba spin-orbit coupling system, the damping-like SOT<missing VAR> can beexpressed as mathbf T<missing VAR>mathrmsomathbf Rctimes mathbf Fmathrmso, in analogy to the classical torque-force relation, where Rc is theeffective radius characterizing the Rashba splitting in the momentum space.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Newton's second law in spin-orbit torque|Cong Son Ho,Seng Ghee Tan,Shun-Qing Shen,Mansoor B. A. Jalil###
(1058538, 1058539)
 In Rashba spin-orbit coupling system, the damping-like SOT<missing VAR> can beexpressed as mathbf T<missing VAR>mathrmsomathbf Rctimes mathbf Fmathrmso, in analogy to the classical torque-force relation, where Rc is theeffective radius characterizing the Rashba splitting in the momentum space.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Newton's second law in spin-orbit torque|Cong Son Ho,Seng Ghee Tan,Shun-Qing Shen,Mansoor B. A. Jalil###
(1058564, 1058564)
 In Rashba spin-orbit coupling system, the damping-like SOT<missing VAR> can beexpressed as mathbf T<missing VAR>mathrmsomathbf Rctimes mathbf Fmathrmso, in analogy to the classical torque-force relation, where Rc is theeffective radius characterizing the Rashba splitting in the momentum space.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Newton's second law in spin-orbit torque|Cong Son Ho,Seng Ghee Tan,Shun-Qing Shen,Mansoor B. A. Jalil###
(1058619, 1058619)
 Asa consequence, the magnetic energy is transferred to the conduction electrons,which dissipates through Joule heating at a rate of (mathbf jecdotmathbf Fmathrm so), with je being the applied current.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Newton's second law in spin-orbit torque|Cong Son Ho,Seng Ghee Tan,Shun-Qing Shen,Mansoor B. A. Jalil###
(1058675, 1058675)
 Asa consequence, the magnetic energy is transferred to the conduction electrons,which dissipates through Joule heating at a rate of (mathbf jecdotmathbf Fmathrm so), with je being the applied current.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Characterizing spin transport: detection of spin accumulation via magnetic stray field|Matthias Pernpeintner,Akashdeep Kamra,Sebastian T. B. Goennenwein,Hans Huebl###
(1058805, 1058805)
 In metals, these aretypically determined indirectly by probing magnetoresistance in magnet/metalheterostructures, assuming knowledge of the interfacial properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GeSb2Te4
###Superconductor-insulator transition in fcc-GeSb2Te4 at elevated pressures|Bar Hen,Samar Layek,Moshe Goldstein,Victor Shelukhin,Mark Shulman,Michael Karpovski,Eran Greenberg,Eran Sterer,Yoram Dagan,Gregory Kh. Rozenberg,Alexander Palevski###
(1059087, 1059091)
Superconductor-insulator transition in fcc-GeSb2Te4 at elevated pressures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GeSb2Te4
###Superconductor-insulator transition in fcc-GeSb2Te4 at elevated pressures|Bar Hen,Samar Layek,Moshe Goldstein,Victor Shelukhin,Mark Shulman,Michael Karpovski,Eran Greenberg,Eran Sterer,Yoram Dagan,Gregory Kh. Rozenberg,Alexander Palevski###
(1059108, 1059112)
 We show that polycrystalline GeSb2Te4 in the fcc phase (f-GST), which is aninsulator at low temperature at ambient pressure, becomes a superconductor atelevated pressures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Superconductor-insulator transition in fcc-GeSb2Te4 at elevated pressures|Bar Hen,Samar Layek,Moshe Goldstein,Victor Shelukhin,Mark Shulman,Michael Karpovski,Eran Greenberg,Eran Sterer,Yoram Dagan,Gregory Kh. Rozenberg,Alexander Palevski###
(1059126, 1059126)
 We show that polycrystalline GeSb2Te4 in the fcc phase (f-GST), which is aninsulator at low temperature at ambient pressure, becomes a superconductor atelevated pressures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Superconductor-insulator transition in fcc-GeSb2Te4 at elevated pressures|Bar Hen,Samar Layek,Moshe Goldstein,Victor Shelukhin,Mark Shulman,Michael Karpovski,Eran Greenberg,Eran Sterer,Yoram Dagan,Gregory Kh. Rozenberg,Alexander Palevski###
(1059256, 1059256)
 In addition, we demonstrate that at higher pressures the f-GST<missing VAR> goesthrough a structural phase transition via amorphization to bcc GST (b-GST),which also become superconducting.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Superconductor-insulator transition in fcc-GeSb2Te4 at elevated pressures|Bar Hen,Samar Layek,Moshe Goldstein,Victor Shelukhin,Mark Shulman,Michael Karpovski,Eran Greenberg,Eran Sterer,Yoram Dagan,Gregory Kh. Rozenberg,Alexander Palevski###
(1059278, 1059278)
 In addition, we demonstrate that at higher pressures the f-GST<missing VAR> goesthrough a structural phase transition via amorphization to bcc GST (b-GST),which also become superconducting.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Superconductor-insulator transition in fcc-GeSb2Te4 at elevated pressures|Bar Hen,Samar Layek,Moshe Goldstein,Victor Shelukhin,Mark Shulman,Michael Karpovski,Eran Greenberg,Eran Sterer,Yoram Dagan,Gregory Kh. Rozenberg,Alexander Palevski###
(1059310, 1059310)
 In addition, we demonstrate that at higher pressures the f-GST<missing VAR> goesthrough a structural phase transition via amorphization to bcc GST (b-GST),which also become superconducting.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Superconductor-insulator transition in fcc-GeSb2Te4 at elevated pressures|Bar Hen,Samar Layek,Moshe Goldstein,Victor Shelukhin,Mark Shulman,Michael Karpovski,Eran Greenberg,Eran Sterer,Yoram Dagan,Gregory Kh. Rozenberg,Alexander Palevski###
(1059357, 1059357)
 We also find that the pressure regime wherean inhomogeneous mixture of amorphous and b-GST<missing VAR> exists, there is an anomalouspeak in magnetoresistance, and suggest an explanation for this anomaly.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FO
###Magnetization reversal in Kagome artificial spin ice studied by first-order reversal curves|L. Sun,C. Zhou,J. H. Liang,T. Xing,N. Lei,P. Murray,Kai Liu,C. Won,Y. Z. Wu###
(1059828, 1059829)
 Magnetization reversal of interconnected Kagome artificial spin ice wasstudied by the first-order reversal curve (FOR<missing VAR>C) technique based on themagneto-optical Kerr effect and magnetoresistance measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Magnetization reversal in Kagome artificial spin ice studied by first-order reversal curves|L. Sun,C. Zhou,J. H. Liang,T. Xing,N. Lei,P. Murray,Kai Liu,C. Won,Y. Z. Wu###
(1059831, 1059831)
 Magnetization reversal of interconnected Kagome artificial spin ice wasstudied by the first-order reversal curve (FOR<missing VAR>C) technique based on themagneto-optical Kerr effect and magnetoresistance measurements.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FO
###Magnetization reversal in Kagome artificial spin ice studied by first-order reversal curves|L. Sun,C. Zhou,J. H. Liang,T. Xing,N. Lei,P. Murray,Kai Liu,C. Won,Y. Z. Wu###
(1059981, 1059982)
 When the field isnearly perpendicular to one of the branches, the FOR<missing VAR>C measurement reveals themagnetic interaction between the Dirac strings and orthogonal branches duringthe magnetization reversal process.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Magnetization reversal in Kagome artificial spin ice studied by first-order reversal curves|L. Sun,C. Zhou,J. H. Liang,T. Xing,N. Lei,P. Murray,Kai Liu,C. Won,Y. Z. Wu###
(1059984, 1059984)
 When the field isnearly perpendicular to one of the branches, the FOR<missing VAR>C measurement reveals themagnetic interaction between the Dirac strings and orthogonal branches duringthe magnetization reversal process.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FO
###Magnetization reversal in Kagome artificial spin ice studied by first-order reversal curves|L. Sun,C. Zhou,J. H. Liang,T. Xing,N. Lei,P. Murray,Kai Liu,C. Won,Y. Z. Wu###
(1060033, 1060034)
 Our results demonstrate that the FOR<missing VAR>Capproach provides a comprehensive framework for understanding the magneticinteraction in the magnetization reversal processes of spin-frustrated systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Magnetization reversal in Kagome artificial spin ice studied by first-order reversal curves|L. Sun,C. Zhou,J. H. Liang,T. Xing,N. Lei,P. Murray,Kai Liu,C. Won,Y. Z. Wu###
(1060036, 1060036)
 Our results demonstrate that the FOR<missing VAR>Capproach provides a comprehensive framework for understanding the magneticinteraction in the magnetization reversal processes of spin-frustrated systems.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ce0.91Yb0.09CoIn5
###Zero-Field Quantum Critical Point in Ce$_{0.91}$Yb$_{0.09}$CoIn$_5$|Y. P. Singh,R. B. Adhikari,D. J. Haney,B. D. White,M. B. Maple,M. Dzero,Carmen C. Almasan###
(1060099, 1060105)
Zero-Field Quantum Critical Point in Ce0.91Yb0.09CoIn5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7142857142857143,0,0,0,0,0,0,0,0,0.13,0,0,0,0,0,0,0,0,0,0,0,0.012857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ce0.91Yb0.09CoIn5
###Zero-Field Quantum Critical Point in Ce$_{0.91}$Yb$_{0.09}$CoIn$_5$|Y. P. Singh,R. B. Adhikari,D. J. Haney,B. D. White,M. B. Maple,M. Dzero,Carmen C. Almasan###
(1060152, 1060158)
 We present results of specific heat, electrical resistance, andmagnetoresistivity measurements on single crystals of the heavy-fermionsuperconducting alloy Ce0.91Yb0.09CoIn5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7142857142857143,0,0,0,0,0,0,0,0,0.13,0,0,0,0,0,0,0,0,0,0,0,0.012857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Yb
###Zero-Field Quantum Critical Point in Ce$_{0.91}$Yb$_{0.09}$CoIn$_5$|Y. P. Singh,R. B. Adhikari,D. J. Haney,B. D. White,M. B. Maple,M. Dzero,Carmen C. Almasan###
(1060220, 1060220)
 Furthermore, we show thatthe Yb-doped sample with x<missing VAR>0.09 exhibits universality due to an underlyingquantum phase transition without an applied magnetic field by utilizing thescaling analysis of gamma.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Zero-Field Quantum Critical Point in Ce$_{0.91}$Yb$_{0.09}$CoIn$_5$|Y. P. Singh,R. B. Adhikari,D. J. Haney,B. D. White,M. B. Maple,M. Dzero,Carmen C. Almasan###
(1060377, 1060377)
 Finally, we found that at zeromagnetic field the system undergoes a third-order phase transition at thetemperature Tc3approx 7 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###A conductive topological insulator with colossal spin Hall effect for ultra-low power spin-orbit-torque switching|Nguyen Huynh Duy Khang,Yugo Ueda,Pham Nam Hai###
(1060430, 1060431)
 Spin-orbit-torque (SOT) switching using the spin Hall effect (SHE) in heavymetals and topological insulators (T<missing VAR>Is) has great potential for ultra-low powermagnetoresistive random-access memory (MRAM).
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[198.0, -1, ',', 2],[206.0, 52, ',', 2],[274.0, 2770, 'Oe', 3],[302.0, 1.5, 'MA', 3]

SH
###A conductive topological insulator with colossal spin Hall effect for ultra-low power spin-orbit-torque switching|Nguyen Huynh Duy Khang,Yugo Ueda,Pham Nam Hai###
(1060448, 1060449)
 Spin-orbit-torque (SOT) switching using the spin Hall effect (SHE) in heavymetals and topological insulators (T<missing VAR>Is) has great potential for ultra-low powermagnetoresistive random-access memory (MRAM).
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[180.0, -1, ',', 2],[188.0, 52, ',', 2],[256.0, 2770, 'Oe', 3],[284.0, 1.5, 'MA', 3]

S
###A conductive topological insulator with colossal spin Hall effect for ultra-low power spin-orbit-torque switching|Nguyen Huynh Duy Khang,Yugo Ueda,Pham Nam Hai###
(1060520, 1060520)
 To be competitive withconventional spin-transfer-torque (STT) switching, a pure spin current sourcewith large spin Hall angle (thetaSH > 1) and high electricalconductivity (sigma > 105 Omega-1m<missing VAR>-1) is required.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, -1, ',', 1],[117.0, 52, ',', 1],[185.0, 2770, 'Oe', 2],[213.0, 1.5, 'MA', 2]

SH
###A conductive topological insulator with colossal spin Hall effect for ultra-low power spin-orbit-torque switching|Nguyen Huynh Duy Khang,Yugo Ueda,Pham Nam Hai###
(1060551, 1060552)
 To be competitive withconventional spin-transfer-torque (STT) switching, a pure spin current sourcewith large spin Hall angle (thetaSH > 1) and high electricalconductivity (sigma > 105 Omega-1m<missing VAR>-1) is required.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, -1, ',', 1],[85.0, 52, ',', 1],[153.0, 2770, 'Oe', 2],[181.0, 1.5, 'MA', 2]

BiSb
###A conductive topological insulator with colossal spin Hall effect for ultra-low power spin-orbit-torque switching|Nguyen Huynh Duy Khang,Yugo Ueda,Pham Nam Hai###
(1060609, 1060610)
 Here, wedemonstrate such a pure spin current source BiSb thin films withsigmasim2.5105 Omega-1m<missing VAR>-1, thetaSHsim52, and spinHall conductivity sigmaSHsim1.3107 hbar/2e<missing VAR>Omega-1m<missing VAR>-1at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, -1, ',', 0],[27.0, 52, ',', 0],[95.0, 2770, 'Oe', 1],[123.0, 1.5, 'MA', 1]

SH
###A conductive topological insulator with colossal spin Hall effect for ultra-low power spin-orbit-torque switching|Nguyen Huynh Duy Khang,Yugo Ueda,Pham Nam Hai###
(1060634, 1060635)
 Here, wedemonstrate such a pure spin current source BiSb thin films withsigmasim2.5105 Omega-1m<missing VAR>-1, thetaSHsim52, and spinHall conductivity sigmaSHsim1.3107 hbar/2e<missing VAR>Omega-1m<missing VAR>-1at room temperature.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, -1, ',', 0],[2.0, 52, ',', 0],[70.0, 2770, 'Oe', 1],[98.0, 1.5, 'MA', 1]

SH
###A conductive topological insulator with colossal spin Hall effect for ultra-low power spin-orbit-torque switching|Nguyen Huynh Duy Khang,Yugo Ueda,Pham Nam Hai###
(1060650, 1060651)
 Here, wedemonstrate such a pure spin current source BiSb thin films withsigmasim2.5105 Omega-1m<missing VAR>-1, thetaSHsim52, and spinHall conductivity sigmaSHsim1.3107 hbar/2e<missing VAR>Omega-1m<missing VAR>-1at room temperature.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, -1, ',', 0],[13.0, 52, ',', 0],[54.0, 2770, 'Oe', 1],[82.0, 1.5, 'MA', 1]

BiSb
###A conductive topological insulator with colossal spin Hall effect for ultra-low power spin-orbit-torque switching|Nguyen Huynh Duy Khang,Yugo Ueda,Pham Nam Hai###
(1060682, 1060683)
 We show that BiSb thin films can generate a colossalspin-orbit field of 2770 Oe/(M<missing VAR>A/cm2) and a critical switching currentdensity as low as 1.5 MA/cm2 in Bi0.9Sb0.1 / MnGa bi-layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, -1, ',', 1],[45.0, 52, ',', 1],[22.0, 2770, 'Oe', 0],[50.0, 1.5, 'MA', 0]

Bi0.9Sb0.1
###A conductive topological insulator with colossal spin Hall effect for ultra-low power spin-orbit-torque switching|Nguyen Huynh Duy Khang,Yugo Ueda,Pham Nam Hai###
(1060740, 1060743)
 We show that BiSb thin films can generate a colossalspin-orbit field of 2770 Oe/(M<missing VAR>A/cm2) and a critical switching currentdensity as low as 1.5 MA/cm2 in Bi0.9Sb0.1 / MnGa bi-layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.9,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, -1, ',', 1],[103.0, 52, ',', 1],[35.0, 2770, 'Oe', 0],[7.0, 1.5, 'MA', 0]

MnGa
###A conductive topological insulator with colossal spin Hall effect for ultra-low power spin-orbit-torque switching|Nguyen Huynh Duy Khang,Yugo Ueda,Pham Nam Hai###
(1060747, 1060748)
 We show that BiSb thin films can generate a colossalspin-orbit field of 2770 Oe/(M<missing VAR>A/cm2) and a critical switching currentdensity as low as 1.5 MA/cm2 in Bi0.9Sb0.1 / MnGa bi-layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, -1, ',', 1],[110.0, 52, ',', 1],[42.0, 2770, 'Oe', 0],[14.0, 1.5, 'MA', 0]

BiSb
###A conductive topological insulator with colossal spin Hall effect for ultra-low power spin-orbit-torque switching|Nguyen Huynh Duy Khang,Yugo Ueda,Pham Nam Hai###
(1060755, 1060756)
 BiSbis the best candidate for the first industrial application of topologicalinsulators.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, -1, ',', 2],[118.0, 52, ',', 2],[50.0, 2770, 'Oe', 1],[22.0, 1.5, 'MA', 1]

Cr1
###Exfoliation and van der Waals heterostructure assembly of intercalated ferromagnet Cr1/3TaS2|Yuji Yamasaki,Rai Moriya,Miho Arai,Satoru Masubuchi,Sunseng Pyon,Tsuyoshi Tamegai,Keiji Ueno,Tomoki Machida###
(1060813, 1060814)
Exfoliation and van der Waals heterostructure assembly of intercalated ferromagnet Cr1/3TaS2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 110, 'K', 3]

TaS2
###Exfoliation and van der Waals heterostructure assembly of intercalated ferromagnet Cr1/3TaS2|Yuji Yamasaki,Rai Moriya,Miho Arai,Satoru Masubuchi,Sunseng Pyon,Tsuyoshi Tamegai,Keiji Ueno,Tomoki Machida###
(1060817, 1060819)
Exfoliation and van der Waals heterostructure assembly of intercalated ferromagnet Cr1/3TaS2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 110, 'K', 3]

W
###Exfoliation and van der Waals heterostructure assembly of intercalated ferromagnet Cr1/3TaS2|Yuji Yamasaki,Rai Moriya,Miho Arai,Satoru Masubuchi,Sunseng Pyon,Tsuyoshi Tamegai,Keiji Ueno,Tomoki Machida###
(1060832, 1060832)
 Ferromagnetic van der Waals (vdW) materials are in demand for spintronicdevices with all-two-dimensional-materials heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 110, 'K', 2]

Cr1
###Exfoliation and van der Waals heterostructure assembly of intercalated ferromagnet Cr1/3TaS2|Yuji Yamasaki,Rai Moriya,Miho Arai,Satoru Masubuchi,Sunseng Pyon,Tsuyoshi Tamegai,Keiji Ueno,Tomoki Machida###
(1060890, 1060891)
 Here, wedemonstrate mechanical exfoliation of magnetic-atom-intercalated transitionmetal dichalcogenide Cr1/3TaS2 from its bulk crystal; previously suchintercalated materials were thought difficult to exfoliate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 110, 'K', 1]

TaS2
###Exfoliation and van der Waals heterostructure assembly of intercalated ferromagnet Cr1/3TaS2|Yuji Yamasaki,Rai Moriya,Miho Arai,Satoru Masubuchi,Sunseng Pyon,Tsuyoshi Tamegai,Keiji Ueno,Tomoki Machida###
(1060894, 1060896)
 Here, wedemonstrate mechanical exfoliation of magnetic-atom-intercalated transitionmetal dichalcogenide Cr1/3TaS2 from its bulk crystal; previously suchintercalated materials were thought difficult to exfoliate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 110, 'K', 1]

C
###Exfoliation and van der Waals heterostructure assembly of intercalated ferromagnet Cr1/3TaS2|Yuji Yamasaki,Rai Moriya,Miho Arai,Satoru Masubuchi,Sunseng Pyon,Tsuyoshi Tamegai,Keiji Ueno,Tomoki Machida###
(1060960, 1060960)
 Magnetotransport inexfoliated tens-of-nanometres-thick flakes revealed ferromagnetic orderingbelow its Curie temperature T<missing VAR>C  110 K as well as strong in-plane magneticanisotropy; these are identical to its bulk properties.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 110, 'K', 0]

Cr1
###Exfoliation and van der Waals heterostructure assembly of intercalated ferromagnet Cr1/3TaS2|Yuji Yamasaki,Rai Moriya,Miho Arai,Satoru Masubuchi,Sunseng Pyon,Tsuyoshi Tamegai,Keiji Ueno,Tomoki Machida###
(1061013, 1061014)
 Further, van der Waalsheterostructure assembly of Cr1/3TaS2 with another intercalated ferromagnetFe1/4TaS2 is demonstrated using a dry-transfer method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 110, 'K', 1]

TaS2
###Exfoliation and van der Waals heterostructure assembly of intercalated ferromagnet Cr1/3TaS2|Yuji Yamasaki,Rai Moriya,Miho Arai,Satoru Masubuchi,Sunseng Pyon,Tsuyoshi Tamegai,Keiji Ueno,Tomoki Machida###
(1061017, 1061019)
 Further, van der Waalsheterostructure assembly of Cr1/3TaS2 with another intercalated ferromagnetFe1/4TaS2 is demonstrated using a dry-transfer method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 110, 'K', 1]

Fe1
###Exfoliation and van der Waals heterostructure assembly of intercalated ferromagnet Cr1/3TaS2|Yuji Yamasaki,Rai Moriya,Miho Arai,Satoru Masubuchi,Sunseng Pyon,Tsuyoshi Tamegai,Keiji Ueno,Tomoki Machida###
(1061030, 1061031)
 Further, van der Waalsheterostructure assembly of Cr1/3TaS2 with another intercalated ferromagnetFe1/4TaS2 is demonstrated using a dry-transfer method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 110, 'K', 1]

TaS2
###Exfoliation and van der Waals heterostructure assembly of intercalated ferromagnet Cr1/3TaS2|Yuji Yamasaki,Rai Moriya,Miho Arai,Satoru Masubuchi,Sunseng Pyon,Tsuyoshi Tamegai,Keiji Ueno,Tomoki Machida###
(1061034, 1061036)
 Further, van der Waalsheterostructure assembly of Cr1/3TaS2 with another intercalated ferromagnetFe1/4TaS2 is demonstrated using a dry-transfer method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 110, 'K', 1]

Cr1
###Exfoliation and van der Waals heterostructure assembly of intercalated ferromagnet Cr1/3TaS2|Yuji Yamasaki,Rai Moriya,Miho Arai,Satoru Masubuchi,Sunseng Pyon,Tsuyoshi Tamegai,Keiji Ueno,Tomoki Machida###
(1061064, 1061065)
 The fabricatedheterojunction composed of Cr1/3TaS2 and Fe1/4TaS2 with a native Ta2O5 oxidetunnel barrier in between exhibits tunnel magnetoresistance (TMR), revealingpossible spin injection and detection with these exfoliatable ferromagneticmaterials through the vdW junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 110, 'K', 2]

TaS2
###Exfoliation and van der Waals heterostructure assembly of intercalated ferromagnet Cr1/3TaS2|Yuji Yamasaki,Rai Moriya,Miho Arai,Satoru Masubuchi,Sunseng Pyon,Tsuyoshi Tamegai,Keiji Ueno,Tomoki Machida###
(1061068, 1061070)
 The fabricatedheterojunction composed of Cr1/3TaS2 and Fe1/4TaS2 with a native Ta2O5 oxidetunnel barrier in between exhibits tunnel magnetoresistance (TMR), revealingpossible spin injection and detection with these exfoliatable ferromagneticmaterials through the vdW junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 110, 'K', 2]

Fe1
###Exfoliation and van der Waals heterostructure assembly of intercalated ferromagnet Cr1/3TaS2|Yuji Yamasaki,Rai Moriya,Miho Arai,Satoru Masubuchi,Sunseng Pyon,Tsuyoshi Tamegai,Keiji Ueno,Tomoki Machida###
(1061074, 1061075)
 The fabricatedheterojunction composed of Cr1/3TaS2 and Fe1/4TaS2 with a native Ta2O5 oxidetunnel barrier in between exhibits tunnel magnetoresistance (TMR), revealingpossible spin injection and detection with these exfoliatable ferromagneticmaterials through the vdW junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 110, 'K', 2]

TaS2
###Exfoliation and van der Waals heterostructure assembly of intercalated ferromagnet Cr1/3TaS2|Yuji Yamasaki,Rai Moriya,Miho Arai,Satoru Masubuchi,Sunseng Pyon,Tsuyoshi Tamegai,Keiji Ueno,Tomoki Machida###
(1061078, 1061080)
 The fabricatedheterojunction composed of Cr1/3TaS2 and Fe1/4TaS2 with a native Ta2O5 oxidetunnel barrier in between exhibits tunnel magnetoresistance (TMR), revealingpossible spin injection and detection with these exfoliatable ferromagneticmaterials through the vdW junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 110, 'K', 2]

Ta2O5
###Exfoliation and van der Waals heterostructure assembly of intercalated ferromagnet Cr1/3TaS2|Yuji Yamasaki,Rai Moriya,Miho Arai,Satoru Masubuchi,Sunseng Pyon,Tsuyoshi Tamegai,Keiji Ueno,Tomoki Machida###
(1061088, 1061091)
 The fabricatedheterojunction composed of Cr1/3TaS2 and Fe1/4TaS2 with a native Ta2O5 oxidetunnel barrier in between exhibits tunnel magnetoresistance (TMR), revealingpossible spin injection and detection with these exfoliatable ferromagneticmaterials through the vdW junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0.7142857142857143,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 110, 'K', 2]

W
###Exfoliation and van der Waals heterostructure assembly of intercalated ferromagnet Cr1/3TaS2|Yuji Yamasaki,Rai Moriya,Miho Arai,Satoru Masubuchi,Sunseng Pyon,Tsuyoshi Tamegai,Keiji Ueno,Tomoki Machida###
(1061146, 1061146)
 The fabricatedheterojunction composed of Cr1/3TaS2 and Fe1/4TaS2 with a native Ta2O5 oxidetunnel barrier in between exhibits tunnel magnetoresistance (TMR), revealingpossible spin injection and detection with these exfoliatable ferromagneticmaterials through the vdW junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[184.0, 110, 'K', 2]

Ta2NiSe7
###Band dependence of charge density wave in quasi-one-dimensional Ta2NiSe7 probed by orbital magnetoresistance|Jiaming He,Yiran Zhang,Libin Wen,Yusen Yang,Jinyu Liu,Yueshen Wu,Hailong Lian,Hui Xing,Shun Wang,Zhiqiang Mao,Ying Liu###
(1061179, 1061183)
Band dependence of charge density wave in quasi-one-dimensional Ta2NiSe7 probed by orbital magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0.7,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ta2NiSe7
###Band dependence of charge density wave in quasi-one-dimensional Ta2NiSe7 probed by orbital magnetoresistance|Jiaming He,Yiran Zhang,Libin Wen,Yusen Yang,Jinyu Liu,Yueshen Wu,Hailong Lian,Hui Xing,Shun Wang,Zhiqiang Mao,Ying Liu###
(1061194, 1061198)
 Ta2NiSe7 is a quasi-one-dimensional (quasi-1D) transition-metal chalcogenidewith Ta and Ni chain structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0.7,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ta
###Band dependence of charge density wave in quasi-one-dimensional Ta2NiSe7 probed by orbital magnetoresistance|Jiaming He,Yiran Zhang,Libin Wen,Yusen Yang,Jinyu Liu,Yueshen Wu,Hailong Lian,Hui Xing,Shun Wang,Zhiqiang Mao,Ying Liu###
(1061226, 1061226)
 Ta2NiSe7 is a quasi-one-dimensional (quasi-1D) transition-metal chalcogenidewith Ta and Ni chain structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Band dependence of charge density wave in quasi-one-dimensional Ta2NiSe7 probed by orbital magnetoresistance|Jiaming He,Yiran Zhang,Libin Wen,Yusen Yang,Jinyu Liu,Yueshen Wu,Hailong Lian,Hui Xing,Shun Wang,Zhiqiang Mao,Ying Liu###
(1061230, 1061230)
 Ta2NiSe7 is a quasi-one-dimensional (quasi-1D) transition-metal chalcogenidewith Ta and Ni chain structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Band dependence of charge density wave in quasi-one-dimensional Ta2NiSe7 probed by orbital magnetoresistance|Jiaming He,Yiran Zhang,Libin Wen,Yusen Yang,Jinyu Liu,Yueshen Wu,Hailong Lian,Hui Xing,Shun Wang,Zhiqiang Mao,Ying Liu###
(1061248, 1061248)
 An incommensurate charge-density wave (CD<missing VAR>W) inthis quasi-1D<missing VAR> structure was well studied previously using tunnelling spectrum,X<missing VAR>-ray and electron diffraction, whereas its transport property and the relationto the underlying electronic states remain to be explored.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Band dependence of charge density wave in quasi-one-dimensional Ta2NiSe7 probed by orbital magnetoresistance|Jiaming He,Yiran Zhang,Libin Wen,Yusen Yang,Jinyu Liu,Yueshen Wu,Hailong Lian,Hui Xing,Shun Wang,Zhiqiang Mao,Ying Liu###
(1061250, 1061250)
 An incommensurate charge-density wave (CD<missing VAR>W) inthis quasi-1D<missing VAR> structure was well studied previously using tunnelling spectrum,X<missing VAR>-ray and electron diffraction, whereas its transport property and the relationto the underlying electronic states remain to be explored.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ta2NiSe7
###Band dependence of charge density wave in quasi-one-dimensional Ta2NiSe7 probed by orbital magnetoresistance|Jiaming He,Yiran Zhang,Libin Wen,Yusen Yang,Jinyu Liu,Yueshen Wu,Hailong Lian,Hui Xing,Shun Wang,Zhiqiang Mao,Ying Liu###
(1061348, 1061352)
 Here we report ourresults of magnetoresistance (MR) on Ta2NiSe7.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0.7,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Band dependence of charge density wave in quasi-one-dimensional Ta2NiSe7 probed by orbital magnetoresistance|Jiaming He,Yiran Zhang,Libin Wen,Yusen Yang,Jinyu Liu,Yueshen Wu,Hailong Lian,Hui Xing,Shun Wang,Zhiqiang Mao,Ying Liu###
(1061379, 1061379)
 A breakdown of the Kohlers<missing VAR> ruleis found upon entering the CD<missing VAR>W state.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Band dependence of charge density wave in quasi-one-dimensional Ta2NiSe7 probed by orbital magnetoresistance|Jiaming He,Yiran Zhang,Libin Wen,Yusen Yang,Jinyu Liu,Yueshen Wu,Hailong Lian,Hui Xing,Shun Wang,Zhiqiang Mao,Ying Liu###
(1061381, 1061381)
 A breakdown of the Kohlers<missing VAR> ruleis found upon entering the CD<missing VAR>W state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Band dependence of charge density wave in quasi-one-dimensional Ta2NiSe7 probed by orbital magnetoresistance|Jiaming He,Yiran Zhang,Libin Wen,Yusen Yang,Jinyu Liu,Yueshen Wu,Hailong Lian,Hui Xing,Shun Wang,Zhiqiang Mao,Ying Liu###
(1061468, 1061468)
 We show that the curvaturechange is well described by two-band orbital MR, with the hole density beingstrongly suppressed in the CD<missing VAR>W state, indicating that the p<missing VAR> orbitals from Seatoms dominate the change in transport through the CD<missing VAR>W transition.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Band dependence of charge density wave in quasi-one-dimensional Ta2NiSe7 probed by orbital magnetoresistance|Jiaming He,Yiran Zhang,Libin Wen,Yusen Yang,Jinyu Liu,Yueshen Wu,Hailong Lian,Hui Xing,Shun Wang,Zhiqiang Mao,Ying Liu###
(1061470, 1061470)
 We show that the curvaturechange is well described by two-band orbital MR, with the hole density beingstrongly suppressed in the CD<missing VAR>W state, indicating that the p<missing VAR> orbitals from Seatoms dominate the change in transport through the CD<missing VAR>W transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Se
###Band dependence of charge density wave in quasi-one-dimensional Ta2NiSe7 probed by orbital magnetoresistance|Jiaming He,Yiran Zhang,Libin Wen,Yusen Yang,Jinyu Liu,Yueshen Wu,Hailong Lian,Hui Xing,Shun Wang,Zhiqiang Mao,Ying Liu###
(1061487, 1061487)
 We show that the curvaturechange is well described by two-band orbital MR, with the hole density beingstrongly suppressed in the CD<missing VAR>W state, indicating that the p<missing VAR> orbitals from Seatoms dominate the change in transport through the CD<missing VAR>W transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Band dependence of charge density wave in quasi-one-dimensional Ta2NiSe7 probed by orbital magnetoresistance|Jiaming He,Yiran Zhang,Libin Wen,Yusen Yang,Jinyu Liu,Yueshen Wu,Hailong Lian,Hui Xing,Shun Wang,Zhiqiang Mao,Ying Liu###
(1061506, 1061506)
 We show that the curvaturechange is well described by two-band orbital MR, with the hole density beingstrongly suppressed in the CD<missing VAR>W state, indicating that the p<missing VAR> orbitals from Seatoms dominate the change in transport through the CD<missing VAR>W transition.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Band dependence of charge density wave in quasi-one-dimensional Ta2NiSe7 probed by orbital magnetoresistance|Jiaming He,Yiran Zhang,Libin Wen,Yusen Yang,Jinyu Liu,Yueshen Wu,Hailong Lian,Hui Xing,Shun Wang,Zhiqiang Mao,Ying Liu###
(1061508, 1061508)
 We show that the curvaturechange is well described by two-band orbital MR, with the hole density beingstrongly suppressed in the CD<missing VAR>W state, indicating that the p<missing VAR> orbitals from Seatoms dominate the change in transport through the CD<missing VAR>W transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr2O3/Ta
###Negative spin Hall magnetoresistance in antiferromagnetic Cr2O3/Ta bilayer at low temperature region|Y. Ji,J. Miao,Y. M. Zhu,K. K. Meng,X. G. Xu,J. K. Chen,Y. Wu,Y. Jiang###
(1061533, 1061538)
Negative spin Hall magnetoresistance in antiferromagnetic Cr2O3/Ta bilayer at low temperature region.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[88.0, 300, 'K', 2],[91.0, 50, 'K', 2],[272.0, 3, 'T', 6],[367.0, 110, ',', 10]

S
###Negative spin Hall magnetoresistance in antiferromagnetic Cr2O3/Ta bilayer at low temperature region|Y. Ji,J. Miao,Y. M. Zhu,K. K. Meng,X. G. Xu,J. K. Chen,Y. Wu,Y. Jiang###
(1061570, 1061570)
 We investigate the observation of negative spin Hall magnetoresistance (SMR)in antiferromagnetic Cr2O3/Ta bilayers at low temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 300, 'K', 1],[59.0, 50, 'K', 1],[240.0, 3, 'T', 5],[335.0, 110, ',', 9]

Cr2O3/Ta
###Negative spin Hall magnetoresistance in antiferromagnetic Cr2O3/Ta bilayer at low temperature region|Y. Ji,J. Miao,Y. M. Zhu,K. K. Meng,X. G. Xu,J. K. Chen,Y. Wu,Y. Jiang###
(1061580, 1061585)
 We investigate the observation of negative spin Hall magnetoresistance (SMR)in antiferromagnetic Cr2O3/Ta bilayers at low temperature.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[41.0, 300, 'K', 1],[44.0, 50, 'K', 1],[225.0, 3, 'T', 5],[320.0, 110, ',', 9]

S
###Negative spin Hall magnetoresistance in antiferromagnetic Cr2O3/Ta bilayer at low temperature region|Y. Ji,J. Miao,Y. M. Zhu,K. K. Meng,X. G. Xu,J. K. Chen,Y. Wu,Y. Jiang###
(1061604, 1061604)
 The sign of the SMRsignals is changed from positive to negative monotonously from 300 K to 50 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 300, 'K', 0],[25.0, 50, 'K', 0],[206.0, 3, 'T', 4],[301.0, 110, ',', 8]

S
###Negative spin Hall magnetoresistance in antiferromagnetic Cr2O3/Ta bilayer at low temperature region|Y. Ji,J. Miao,Y. M. Zhu,K. K. Meng,X. G. Xu,J. K. Chen,Y. Wu,Y. Jiang###
(1061645, 1061645)
The change of the signs for SMR is related with the competitions between thesurface ferromagnetism and bulky antiferromagnetic of Cr2O3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 300, 'K', 1],[16.0, 50, 'K', 1],[165.0, 3, 'T', 3],[260.0, 110, ',', 7]

Cr2O3
###Negative spin Hall magnetoresistance in antiferromagnetic Cr2O3/Ta bilayer at low temperature region|Y. Ji,J. Miao,Y. M. Zhu,K. K. Meng,X. G. Xu,J. K. Chen,Y. Wu,Y. Jiang###
(1061676, 1061679)
The change of the signs for SMR is related with the competitions between thesurface ferromagnetism and bulky antiferromagnetic of Cr2O3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 300, 'K', 1],[47.0, 50, 'K', 1],[131.0, 3, 'T', 3],[226.0, 110, ',', 7]

Cr2O3
###Negative spin Hall magnetoresistance in antiferromagnetic Cr2O3/Ta bilayer at low temperature region|Y. Ji,J. Miao,Y. M. Zhu,K. K. Meng,X. G. Xu,J. K. Chen,Y. Wu,Y. Jiang###
(1061691, 1061694)
 The surfacemagnetizations of Cr2O3 (0001) is considered to be dominated at highertemperature, while the bulky antiferromagnetics gets to be robust withdecreasing of temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 300, 'K', 2],[62.0, 50, 'K', 2],[116.0, 3, 'T', 2],[211.0, 110, ',', 6]

S
###Negative spin Hall magnetoresistance in antiferromagnetic Cr2O3/Ta bilayer at low temperature region|Y. Ji,J. Miao,Y. M. Zhu,K. K. Meng,X. G. Xu,J. K. Chen,Y. Wu,Y. Jiang###
(1061769, 1061769)
 The slopes of the abnormal Hall curves coincide withthe signs of SMR, confirming variational interface magnetism of Cr2O3 atdifferent temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 300, 'K', 3],[140.0, 50, 'K', 3],[41.0, 3, 'T', 1],[136.0, 110, ',', 5]

Cr2O3
###Negative spin Hall magnetoresistance in antiferromagnetic Cr2O3/Ta bilayer at low temperature region|Y. Ji,J. Miao,Y. M. Zhu,K. K. Meng,X. G. Xu,J. K. Chen,Y. Wu,Y. Jiang###
(1061784, 1061787)
 The slopes of the abnormal Hall curves coincide withthe signs of SMR, confirming variational interface magnetism of Cr2O3 atdifferent temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 300, 'K', 3],[155.0, 50, 'K', 3],[23.0, 3, 'T', 1],[118.0, 110, ',', 5]

S
###Negative spin Hall magnetoresistance in antiferromagnetic Cr2O3/Ta bilayer at low temperature region|Y. Ji,J. Miao,Y. M. Zhu,K. K. Meng,X. G. Xu,J. K. Chen,Y. Wu,Y. Jiang###
(1061803, 1061803)
 From the observed SMR ratio under 3 T, the spin mixingconductance at Cr2O3/Ta interface is estimated to be 1.121014 (ohm-1m<missing VAR>-2),which is comparable to that of YIG<missing VAR>/Pt structures and our early results ofCr2O3/W.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[177.0, 300, 'K', 4],[174.0, 50, 'K', 4],[7.0, 3, 'T', 0],[102.0, 110, ',', 4]

Cr2O3/Ta
###Negative spin Hall magnetoresistance in antiferromagnetic Cr2O3/Ta bilayer at low temperature region|Y. Ji,J. Miao,Y. M. Zhu,K. K. Meng,X. G. Xu,J. K. Chen,Y. Wu,Y. Jiang###
(1061824, 1061829)
 From the observed SMR ratio under 3 T, the spin mixingconductance at Cr2O3/Ta interface is estimated to be 1.121014 (ohm-1m<missing VAR>-2),which is comparable to that of YIG<missing VAR>/Pt structures and our early results ofCr2O3/W.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[198.0, 300, 'K', 4],[195.0, 50, 'K', 4],[14.0, 3, 'T', 0],[76.0, 110, ',', 4]

YI
###Negative spin Hall magnetoresistance in antiferromagnetic Cr2O3/Ta bilayer at low temperature region|Y. Ji,J. Miao,Y. M. Zhu,K. K. Meng,X. G. Xu,J. K. Chen,Y. Wu,Y. Jiang###
(1061868, 1061869)
 From the observed SMR ratio under 3 T, the spin mixingconductance at Cr2O3/Ta interface is estimated to be 1.121014 (ohm-1m<missing VAR>-2),which is comparable to that of YIG<missing VAR>/Pt structures and our early results ofCr2O3/W.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[242.0, 300, 'K', 4],[239.0, 50, 'K', 4],[58.0, 3, 'T', 0],[36.0, 110, ',', 4]

Pt
###Negative spin Hall magnetoresistance in antiferromagnetic Cr2O3/Ta bilayer at low temperature region|Y. Ji,J. Miao,Y. M. Zhu,K. K. Meng,X. G. Xu,J. K. Chen,Y. Wu,Y. Jiang###
(1061872, 1061872)
 From the observed SMR ratio under 3 T, the spin mixingconductance at Cr2O3/Ta interface is estimated to be 1.121014 (ohm-1m<missing VAR>-2),which is comparable to that of YIG<missing VAR>/Pt structures and our early results ofCr2O3/W.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[246.0, 300, 'K', 4],[243.0, 50, 'K', 4],[62.0, 3, 'T', 0],[33.0, 110, ',', 4]

Cr2O3/W
###Negative spin Hall magnetoresistance in antiferromagnetic Cr2O3/Ta bilayer at low temperature region|Y. Ji,J. Miao,Y. M. Zhu,K. K. Meng,X. G. Xu,J. K. Chen,Y. Wu,Y. Jiang###
(1061887, 1061892)
 From the observed SMR ratio under 3 T, the spin mixingconductance at Cr2O3/Ta interface is estimated to be 1.121014 (ohm-1m<missing VAR>-2),which is comparable to that of YIG<missing VAR>/Pt structures and our early results ofCr2O3/W.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[261.0, 300, 'K', 4],[258.0, 50, 'K', 4],[77.0, 3, 'T', 0],[13.0, 110, ',', 4]

Bi2Te3
###Bulk contribution to magnetotransport properties of low defect-density Bi$_2$Te$_3$ topological insulator thin films|Prosper Ngabonziza,Yi Wang,Alexander Brinkman###
(1061941, 1061944)
Bulk contribution to magnetotransport properties of low defect-density Bi2Te3 topological insulator thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Te3
###Bulk contribution to magnetotransport properties of low defect-density Bi$_2$Te$_3$ topological insulator thin films|Prosper Ngabonziza,Yi Wang,Alexander Brinkman###
(1062014, 1062017)
 For Bi2Te3 topological insulator samples,bulk single crystals and thin films exposed to air during fabrication processesare known to be bulk conducting, with the chemical potential in the bulkconduction band.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Te3
###Bulk contribution to magnetotransport properties of low defect-density Bi$_2$Te$_3$ topological insulator thin films|Prosper Ngabonziza,Yi Wang,Alexander Brinkman###
(1062087, 1062090)
 For Bi2Te3 thin films grown by molecular beam epitaxy,we combine structural characterization (transmission electron microscopy),chemical surface analysis as function of time (x<missing VAR>-ray photoelectronspectroscopy) and magnetotransport analysis to understand the low defectdensity and record high bulk electron mobility once charge is doped into thebulk by surface degradation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CrI3
###Probing magnetism in 2D van der Waals crystalline insulators via electron tunneling|Dahlia R. Klein,David MacNeill,Jose L. Lado,David Soriano,Efrén Navarro-Moratalla,Kenji Watanabe,Takashi Taniguchi,Soham Manni,Paul Canfield,Joaquín Fernández-Rossier,Pablo Jarillo-Herrero###
(1062437, 1062439)
 Here, wereport tunneling through the layered magnetic insulator CrI3 as a function oftemperature and applied magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 2, 'D', 3],[75.0, 95, '%', 2],[80.0, 300, '%', 2],[86.0, 550, '%', 2]

CrI3
###Probing magnetism in 2D van der Waals crystalline insulators via electron tunneling|Dahlia R. Klein,David MacNeill,Jose L. Lado,David Soriano,Efrén Navarro-Moratalla,Kenji Watanabe,Takashi Taniguchi,Soham Manni,Paul Canfield,Joaquín Fernández-Rossier,Pablo Jarillo-Herrero###
(1062540, 1062542)
 The metamagnetic transition results in magnetoresistances of 95%,300%, and 550% for bilayer, trilayer, and tetralayer CrI3 barriers,respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[224.0, 2, 'D', 5],[26.0, 95, '%', 0],[21.0, 300, '%', 0],[15.0, 550, '%', 0]

CrI3
###Probing magnetism in 2D van der Waals crystalline insulators via electron tunneling|Dahlia R. Klein,David MacNeill,Jose L. Lado,David Soriano,Efrén Navarro-Moratalla,Kenji Watanabe,Takashi Taniguchi,Soham Manni,Paul Canfield,Joaquín Fernández-Rossier,Pablo Jarillo-Herrero###
(1062593, 1062595)
 We further measure inelastic tunneling spectra for our junctions,unveiling a rich spectrum of collective magnetic excitations (magnons) in CrI3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[277.0, 2, 'D', 6],[79.0, 95, '%', 1],[74.0, 300, '%', 1],[68.0, 550, '%', 1]

In
###Quantum anomalies in nodal line semimetals|A. A. Burkov###
(1062712, 1062712)
 In particular, Weyl andDirac semimetals, which have point band touching nodes, are characterized bythe chiral anomaly, which leads to the Fermi arc surface states, anomalous Halleffect, negative longitudinal magnetoresistance and planar Hall effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Quantum anomalies in nodal line semimetals|A. A. Burkov###
(1062794, 1062794)
 In thispaper we explore analogous phenomena in nodal line semimetals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFeMnGe
###Structure, magnetic and transport properties of epitaxial thin films of equiatomic CoFeMnGe quaternary Heusler alloy|Varun K. Kushwaha,Jyoti Rani,C. V. Tomy,Ashwin Tulapurkar###
(1062996, 1062999)
Structure, magnetic and transport properties of epitaxial thin films of equiatomic CoFeMnGe quaternary Heusler alloy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.25,0.25,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 100, '%', 1]

In
###Structure, magnetic and transport properties of epitaxial thin films of equiatomic CoFeMnGe quaternary Heusler alloy|Varun K. Kushwaha,Jyoti Rani,C. V. Tomy,Ashwin Tulapurkar###
(1063068, 1063068)
 In this paper, we reportthe epitaxial thin films growth of half-metallic CoFeMnGe Heusler alloy on MgO(001) substrate using pulsed laser deposition system, along with the study ofstructural, magnetic and transport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 100, '%', 1]

CoFeMnGe
###Structure, magnetic and transport properties of epitaxial thin films of equiatomic CoFeMnGe quaternary Heusler alloy|Varun K. Kushwaha,Jyoti Rani,C. V. Tomy,Ashwin Tulapurkar###
(1063096, 1063099)
 In this paper, we reportthe epitaxial thin films growth of half-metallic CoFeMnGe Heusler alloy on MgO(001) substrate using pulsed laser deposition system, along with the study ofstructural, magnetic and transport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.25,0.25,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 100, '%', 1]

MgO
###Structure, magnetic and transport properties of epitaxial thin films of equiatomic CoFeMnGe quaternary Heusler alloy|Varun K. Kushwaha,Jyoti Rani,C. V. Tomy,Ashwin Tulapurkar###
(1063107, 1063108)
 In this paper, we reportthe epitaxial thin films growth of half-metallic CoFeMnGe Heusler alloy on MgO(001) substrate using pulsed laser deposition system, along with the study ofstructural, magnetic and transport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 100, '%', 1]

C
###Colossal magnetoresistance in a Mott insulator via magnetic field-driven insulator-metal transition|M. Zhu,J. Peng,T. Zou,K. Prokes,S. D. Mahanti,T. Hong,Z. Q. Mao,G. Q. Liu,X. Ke###
(1063665, 1063665)
 We present a new type of colossal magnetoresistance (CMR) arising from ananomalous collapse of the Mott insulating state via a modest magnetic field ina bilayer ruthenate, Ti-doped Ca3Ru2O7.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ti
###Colossal magnetoresistance in a Mott insulator via magnetic field-driven insulator-metal transition|M. Zhu,J. Peng,T. Zou,K. Prokes,S. D. Mahanti,T. Hong,Z. Q. Mao,G. Q. Liu,X. Ke###
(1063711, 1063711)
 We present a new type of colossal magnetoresistance (CMR) arising from ananomalous collapse of the Mott insulating state via a modest magnetic field ina bilayer ruthenate, Ti-doped Ca3Ru2O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ca3Ru2O7
###Colossal magnetoresistance in a Mott insulator via magnetic field-driven insulator-metal transition|M. Zhu,J. Peng,T. Zou,K. Prokes,S. D. Mahanti,T. Hong,Z. Q. Mao,G. Q. Liu,X. Ke###
(1063715, 1063720)
 We present a new type of colossal magnetoresistance (CMR) arising from ananomalous collapse of the Mott insulating state via a modest magnetic field ina bilayer ruthenate, Ti-doped Ca3Ru2O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Colossal magnetoresistance in a Mott insulator via magnetic field-driven insulator-metal transition|M. Zhu,J. Peng,T. Zou,K. Prokes,S. D. Mahanti,T. Hong,Z. Q. Mao,G. Q. Liu,X. Ke###
(1063874, 1063874)
 This study further provides a model approach to search for CMRsystems other than manganites, such as Mott insulators in the vicinity of theboundary between competing phases.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CeBi2
###Kondo behavior and metamagnetic phase transition in a heavy fermion compound CeBi2|W. Zhou,C. Q. Xu,B. Li,R. Sankar,F. M. Zhang,B. Qian,C. Cao,J. H. Dai,Jianming Lu,Xiaofeng Xu###
(1063946, 1063948)
Kondo behavior and metamagnetic phase transition in a heavy fermion compound CeBi2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 200, 'mJ', 3]

CeBi2
###Kondo behavior and metamagnetic phase transition in a heavy fermion compound CeBi2|W. Zhou,C. Q. Xu,B. Li,R. Sankar,F. M. Zhang,B. Qian,C. Cao,J. H. Dai,Jianming Lu,Xiaofeng Xu###
(1064060, 1064062)
 Here we report a comprehensive study on thetransport and thermodynamic properties of a cerium-based heavy fermion compoundCeBi2 which undergoes an anti-ferromagnetic transition at T<missing VAR>N sim 3.3K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 200, 'mJ', 1]

N
###Kondo behavior and metamagnetic phase transition in a heavy fermion compound CeBi2|W. Zhou,C. Q. Xu,B. Li,R. Sankar,F. M. Zhang,B. Qian,C. Cao,J. H. Dai,Jianming Lu,Xiaofeng Xu###
(1064079, 1064079)
 Here we report a comprehensive study on thetransport and thermodynamic properties of a cerium-based heavy fermion compoundCeBi2 which undergoes an anti-ferromagnetic transition at T<missing VAR>N sim 3.3K.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 200, 'mJ', 1]

K
###Kondo behavior and metamagnetic phase transition in a heavy fermion compound CeBi2|W. Zhou,C. Q. Xu,B. Li,R. Sankar,F. M. Zhang,B. Qian,C. Cao,J. H. Dai,Jianming Lu,Xiaofeng Xu###
(1064086, 1064086)
 Here we report a comprehensive study on thetransport and thermodynamic properties of a cerium-based heavy fermion compoundCeBi2 which undergoes an anti-ferromagnetic transition at T<missing VAR>N sim 3.3K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 200, 'mJ', 1]

K2
###Kondo behavior and metamagnetic phase transition in a heavy fermion compound CeBi2|W. Zhou,C. Q. Xu,B. Li,R. Sankar,F. M. Zhang,B. Qian,C. Cao,J. H. Dai,Jianming Lu,Xiaofeng Xu###
(1064126, 1064127)
 Its high temperature paramagnetic state is characterized by an enhanced heatcapacity with Sommerfeld coefficient gamma over 200 mJ/molK2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 200, 'mJ', 0]

CeBi2
###Kondo behavior and metamagnetic phase transition in a heavy fermion compound CeBi2|W. Zhou,C. Q. Xu,B. Li,R. Sankar,F. M. Zhang,B. Qian,C. Cao,J. H. Dai,Jianming Lu,Xiaofeng Xu###
(1064200, 1064202)
Collectively, CeBi2 may serve as an intriguing system to study the interplaybetween f<missing VAR> electrons and the itinerant Fermi sea.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 200, 'mJ', 3]

Cd3As2
###Magnetic-field enhanced high-thermoelectric performance in topological Dirac semimetal Cd$_3$As$_2$ crystal|H. H. Wang,X. G. Luo,W. W. Chen,N. Z. Wang,B. Lei,F. B. Meng,C. Shang,L. K. Ma,T. Wu,X. Dai,Z. F. Wang,X. H. Chen###
(1064270, 1064273)
Magnetic-field enhanced high-thermoelectric performance in topological Dirac semimetal Cd3As2 crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 0.17, 'to', 4],[148.0, 1.1, 'by', 4],[160.0, 350, 'K', 4],[173.0, 7, 'Tesla', 4]

Cd3As2
###Magnetic-field enhanced high-thermoelectric performance in topological Dirac semimetal Cd$_3$As$_2$ crystal|H. H. Wang,X. G. Luo,W. W. Chen,N. Z. Wang,B. Lei,F. B. Meng,C. Shang,L. K. Ma,T. Wu,X. Dai,Z. F. Wang,X. H. Chen###
(1064340, 1064343)
 We study magneto-thermoelectric figure of merit(ZT) in three-dimensional Dirac semimetal Cd3As2 crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 0.17, 'to', 2],[78.0, 1.1, 'by', 2],[90.0, 350, 'K', 2],[103.0, 7, 'Tesla', 2]

Cd3As2
###Magnetic-field enhanced high-thermoelectric performance in topological Dirac semimetal Cd$_3$As$_2$ crystal|H. H. Wang,X. G. Luo,W. W. Chen,N. Z. Wang,B. Lei,F. B. Meng,C. Shang,L. K. Ma,T. Wu,X. Dai,Z. F. Wang,X. H. Chen###
(1064503, 1064506)
 The hugeenhancement of ZT by magnetic field arises from the linear Dirac band withlarge Fermi velocity and the large electric thermal conductivity inCd3As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 0.17, 'to', 1],[82.0, 1.1, 'by', 1],[70.0, 350, 'K', 1],[57.0, 7, 'Tesla', 1]

LaTiO3/SrTiO3
###Evolution of ferromagnetism in two-dimensional electron gas of LaTiO3/SrTiO3|Fangdi Wen,Yanwei Cao,Xiaoran Liu,Banabir Pal,Srimanta Middey,Mikhail Kareev,Jak Chakhalian###
(1064571, 1064579)
Evolution of ferromagnetism in two-dimensional electron gas of LaTiO3/SrTiO3.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[211.0, 2, 'DEG', 3],[232.0, 2, 'DEG', 4]

LaAlO3/SrTiO3
###Evolution of ferromagnetism in two-dimensional electron gas of LaTiO3/SrTiO3|Fangdi Wen,Yanwei Cao,Xiaoran Liu,Banabir Pal,Srimanta Middey,Mikhail Kareev,Jak Chakhalian###
(1064658, 1064666)
 For example, despite almost a decade long researcheffort, the microscopic origin of ferromagnetism in LaAlO3/SrTiO3heterojunction is still an open question.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[124.0, 2, 'DEG', 1],[145.0, 2, 'DEG', 2]

SrTiO3
###Evolution of ferromagnetism in two-dimensional electron gas of LaTiO3/SrTiO3|Fangdi Wen,Yanwei Cao,Xiaoran Liu,Banabir Pal,Srimanta Middey,Mikhail Kareev,Jak Chakhalian###
(1064726, 1064729)
 Here, by using a prototypicaltwo-dimensional electron gas (2DEG) which emerges at the interface between bandinsulator SrTiO3 and antiferromagnetic Mott insulator LaTiO3 , the experimentreveals the evidence for magnetic phase separation in hole-doped Ti d<missing VAR>1 t2gsystem resulting in spin-polarized 2DEG.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 2, 'DEG', 0],[82.0, 2, 'DEG', 1]

LaTiO3
###Evolution of ferromagnetism in two-dimensional electron gas of LaTiO3/SrTiO3|Fangdi Wen,Yanwei Cao,Xiaoran Liu,Banabir Pal,Srimanta Middey,Mikhail Kareev,Jak Chakhalian###
(1064739, 1064742)
 Here, by using a prototypicaltwo-dimensional electron gas (2DEG) which emerges at the interface between bandinsulator SrTiO3 and antiferromagnetic Mott insulator LaTiO3 , the experimentreveals the evidence for magnetic phase separation in hole-doped Ti d<missing VAR>1 t2gsystem resulting in spin-polarized 2DEG.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 2, 'DEG', 0],[69.0, 2, 'DEG', 1]

Ti
###Evolution of ferromagnetism in two-dimensional electron gas of LaTiO3/SrTiO3|Fangdi Wen,Yanwei Cao,Xiaoran Liu,Banabir Pal,Srimanta Middey,Mikhail Kareev,Jak Chakhalian###
(1064771, 1064771)
 Here, by using a prototypicaltwo-dimensional electron gas (2DEG) which emerges at the interface between bandinsulator SrTiO3 and antiferromagnetic Mott insulator LaTiO3 , the experimentreveals the evidence for magnetic phase separation in hole-doped Ti d<missing VAR>1 t2gsystem resulting in spin-polarized 2DEG.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 2, 'DEG', 0],[40.0, 2, 'DEG', 1]

LaTiO3
###Evolution of ferromagnetism in two-dimensional electron gas of LaTiO3/SrTiO3|Fangdi Wen,Yanwei Cao,Xiaoran Liu,Banabir Pal,Srimanta Middey,Mikhail Kareev,Jak Chakhalian###
(1064899, 1064902)
 The observation of clear hysteresis inmagnetotransport at low magnetic fields implies spin-polarization from magneticislands in the hole rich LaTiO3 near the interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 2, 'DEG', 3],[88.0, 2, 'DEG', 2]

Bi
###Two-Stage Proximity-Induced Gap-Opening in Topological Insulator - Insulating Ferromagnet (Bi$_x$Sb$_{1-x}$)$_2$Te$_3$ - EuS Bilayers|Qi I. Yang,Aharon Kapitulnik###
(1064998, 1064998)
Two-Stage Proximity-Induced Gap-Opening in Topological Insulator - Insulating Ferromagnet (Bix<missing VAR>Sb1-x)2Te3 - EuS Bilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Te3
###Two-Stage Proximity-Induced Gap-Opening in Topological Insulator - Insulating Ferromagnet (Bi$_x$Sb$_{1-x}$)$_2$Te$_3$ - EuS Bilayers|Qi I. Yang,Aharon Kapitulnik###
(1065006, 1065007)
Two-Stage Proximity-Induced Gap-Opening in Topological Insulator - Insulating Ferromagnet (Bix<missing VAR>Sb1-x)2Te3 - EuS Bilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuS
###Two-Stage Proximity-Induced Gap-Opening in Topological Insulator - Insulating Ferromagnet (Bi$_x$Sb$_{1-x}$)$_2$Te$_3$ - EuS Bilayers|Qi I. Yang,Aharon Kapitulnik###
(1065011, 1065012)
Two-Stage Proximity-Induced Gap-Opening in Topological Insulator - Insulating Ferromagnet (Bix<missing VAR>Sb1-x)2Te3 - EuS Bilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi
###Two-Stage Proximity-Induced Gap-Opening in Topological Insulator - Insulating Ferromagnet (Bi$_x$Sb$_{1-x}$)$_2$Te$_3$ - EuS Bilayers|Qi I. Yang,Aharon Kapitulnik###
(1065057, 1065057)
 To further investigate the interplay between ferromagnetism and topologicalinsulators, thin films of the low-carrier topological insulator(Bix<missing VAR>Sb1-x)2Te3 were deposited on the insulating ferromagnet EuS(100) in situ.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Te3
###Two-Stage Proximity-Induced Gap-Opening in Topological Insulator - Insulating Ferromagnet (Bi$_x$Sb$_{1-x}$)$_2$Te$_3$ - EuS Bilayers|Qi I. Yang,Aharon Kapitulnik###
(1065065, 1065066)
 To further investigate the interplay between ferromagnetism and topologicalinsulators, thin films of the low-carrier topological insulator(Bix<missing VAR>Sb1-x)2Te3 were deposited on the insulating ferromagnet EuS(100) in situ.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuS
###Two-Stage Proximity-Induced Gap-Opening in Topological Insulator - Insulating Ferromagnet (Bi$_x$Sb$_{1-x}$)$_2$Te$_3$ - EuS Bilayers|Qi I. Yang,Aharon Kapitulnik###
(1065080, 1065081)
 To further investigate the interplay between ferromagnetism and topologicalinsulators, thin films of the low-carrier topological insulator(Bix<missing VAR>Sb1-x)2Te3 were deposited on the insulating ferromagnet EuS(100) in situ.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Two-Stage Proximity-Induced Gap-Opening in Topological Insulator - Insulating Ferromagnet (Bi$_x$Sb$_{1-x}$)$_2$Te$_3$ - EuS Bilayers|Qi I. Yang,Aharon Kapitulnik###
(1065094, 1065094)
 AC susceptibility indicates magnetic anomalies betweenT<missing VAR>approx30mathrmK and T<missing VAR>approx60mathrmK, well above the Curietemperature T<missing VAR>C approx 15mathrmK of EuS.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Two-Stage Proximity-Induced Gap-Opening in Topological Insulator - Insulating Ferromagnet (Bi$_x$Sb$_{1-x}$)$_2$Te$_3$ - EuS Bilayers|Qi I. Yang,Aharon Kapitulnik###
(1065111, 1065111)
 AC susceptibility indicates magnetic anomalies betweenT<missing VAR>approx30mathrmK and T<missing VAR>approx60mathrmK, well above the Curietemperature T<missing VAR>C approx 15mathrmK of EuS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Two-Stage Proximity-Induced Gap-Opening in Topological Insulator - Insulating Ferromagnet (Bi$_x$Sb$_{1-x}$)$_2$Te$_3$ - EuS Bilayers|Qi I. Yang,Aharon Kapitulnik###
(1065119, 1065119)
 AC susceptibility indicates magnetic anomalies betweenT<missing VAR>approx30mathrmK and T<missing VAR>approx60mathrmK, well above the Curietemperature T<missing VAR>C approx 15mathrmK of EuS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Two-Stage Proximity-Induced Gap-Opening in Topological Insulator - Insulating Ferromagnet (Bi$_x$Sb$_{1-x}$)$_2$Te$_3$ - EuS Bilayers|Qi I. Yang,Aharon Kapitulnik###
(1065134, 1065134)
 AC susceptibility indicates magnetic anomalies betweenT<missing VAR>approx30mathrmK and T<missing VAR>approx60mathrmK, well above the Curietemperature T<missing VAR>C approx 15mathrmK of EuS.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Two-Stage Proximity-Induced Gap-Opening in Topological Insulator - Insulating Ferromagnet (Bi$_x$Sb$_{1-x}$)$_2$Te$_3$ - EuS Bilayers|Qi I. Yang,Aharon Kapitulnik###
(1065140, 1065140)
 AC susceptibility indicates magnetic anomalies betweenT<missing VAR>approx30mathrmK and T<missing VAR>approx60mathrmK, well above the Curietemperature T<missing VAR>C approx 15mathrmK of EuS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuS
###Two-Stage Proximity-Induced Gap-Opening in Topological Insulator - Insulating Ferromagnet (Bi$_x$Sb$_{1-x}$)$_2$Te$_3$ - EuS Bilayers|Qi I. Yang,Aharon Kapitulnik###
(1065144, 1065145)
 AC susceptibility indicates magnetic anomalies betweenT<missing VAR>approx30mathrmK and T<missing VAR>approx60mathrmK, well above the Curietemperature T<missing VAR>C approx 15mathrmK of EuS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Antidamping torque-induced switching in biaxial antiferromagnetic insulators|X. Z. Chen,R. Zarzuela,J. Zhang,C. Song,X. F. Zhou,G. Y. Shi,F. Li,H. A. Zhou,W. J. Jiang,F. Pan,Y. Tserkovnyak###
(1065355, 1065355)
 We investigate the current-induced switching of the Neel order in NiO(001)/Ptheterostructures,which is manifested electrically via the spin Hallmagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn2Au
###Antidamping torque-induced switching in biaxial antiferromagnetic insulators|X. Z. Chen,R. Zarzuela,J. Zhang,C. Song,X. F. Zhou,G. Y. Shi,F. Li,H. A. Zhou,W. J. Jiang,F. Pan,Y. Tserkovnyak###
(1065527, 1065529)
 This is in stark contrast to the case of antiferromagnets such asMn2Au and CuMnAs, where field-like torques induced by the Edelstein effectdrive the Neel switching, therefore resulting in an orthogonal alignmentbetween the Neel order and the writing current.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CuMnAs
###Antidamping torque-induced switching in biaxial antiferromagnetic insulators|X. Z. Chen,R. Zarzuela,J. Zhang,C. Song,X. F. Zhou,G. Y. Shi,F. Li,H. A. Zhou,W. J. Jiang,F. Pan,Y. Tserkovnyak###
(1065533, 1065535)
 This is in stark contrast to the case of antiferromagnets such asMn2Au and CuMnAs, where field-like torques induced by the Edelstein effectdrive the Neel switching, therefore resulting in an orthogonal alignmentbetween the Neel order and the writing current.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbTe4
###Pressure induced superconductivity bordering a charge-density-wave state in NbTe4 with strong spinorbit coupling|Xiaojun Yang,Yonghui Zhou,Mengmeng Wang,Hua Bai,Xuliang Chen,Chao An,Ying Zhou,Qian Chen,Yupeng Li,Zhen Wang,Jian Chen,Chao Cao,Yuke Li,Yi Zhou,Zhaorong Yang,Zhu-An Xu###
(1065672, 1065674)
Pressure induced superconductivity bordering a charge-density-wave state in NbTe4 with strong spinorbit coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[232.0, 12.4, 'GPa', 4],[241.0, 69, 'GPa', 5],[264.0, 2.2, 'K', 5],[280.0, 2, 'T', 5],[302.0, 102, '%', 6]

C
###Pressure induced superconductivity bordering a charge-density-wave state in NbTe4 with strong spinorbit coupling|Xiaojun Yang,Yonghui Zhou,Mengmeng Wang,Hua Bai,Xuliang Chen,Chao An,Ying Zhou,Qian Chen,Yupeng Li,Zhen Wang,Jian Chen,Chao Cao,Yuke Li,Yi Zhou,Zhaorong Yang,Zhu-An Xu###
(1065714, 1065714)
 Transition-metal chalcogenides host various phases of matter, such ascharge-density wave (CD<missing VAR>W), superconductors, and topological insulators orsemimetals.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[192.0, 12.4, 'GPa', 3],[201.0, 69, 'GPa', 4],[224.0, 2.2, 'K', 4],[240.0, 2, 'T', 4],[262.0, 102, '%', 5]

W
###Pressure induced superconductivity bordering a charge-density-wave state in NbTe4 with strong spinorbit coupling|Xiaojun Yang,Yonghui Zhou,Mengmeng Wang,Hua Bai,Xuliang Chen,Chao An,Ying Zhou,Qian Chen,Yupeng Li,Zhen Wang,Jian Chen,Chao Cao,Yuke Li,Yi Zhou,Zhaorong Yang,Zhu-An Xu###
(1065716, 1065716)
 Transition-metal chalcogenides host various phases of matter, such ascharge-density wave (CD<missing VAR>W), superconductors, and topological insulators orsemimetals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[190.0, 12.4, 'GPa', 3],[199.0, 69, 'GPa', 4],[222.0, 2.2, 'K', 4],[238.0, 2, 'T', 4],[260.0, 102, '%', 5]

C
###Pressure induced superconductivity bordering a charge-density-wave state in NbTe4 with strong spinorbit coupling|Xiaojun Yang,Yonghui Zhou,Mengmeng Wang,Hua Bai,Xuliang Chen,Chao An,Ying Zhou,Qian Chen,Yupeng Li,Zhen Wang,Jian Chen,Chao Cao,Yuke Li,Yi Zhou,Zhaorong Yang,Zhu-An Xu###
(1065745, 1065745)
 Superconductivity and its competition with CD<missing VAR>W in low-dimensionalcompounds have attracted much interest and stimulated considerable research.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 12.4, 'GPa', 2],[170.0, 69, 'GPa', 3],[193.0, 2.2, 'K', 3],[209.0, 2, 'T', 3],[231.0, 102, '%', 4]

W
###Pressure induced superconductivity bordering a charge-density-wave state in NbTe4 with strong spinorbit coupling|Xiaojun Yang,Yonghui Zhou,Mengmeng Wang,Hua Bai,Xuliang Chen,Chao An,Ying Zhou,Qian Chen,Yupeng Li,Zhen Wang,Jian Chen,Chao Cao,Yuke Li,Yi Zhou,Zhaorong Yang,Zhu-An Xu###
(1065747, 1065747)
 Superconductivity and its competition with CD<missing VAR>W in low-dimensionalcompounds have attracted much interest and stimulated considerable research.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[159.0, 12.4, 'GPa', 2],[168.0, 69, 'GPa', 3],[191.0, 2.2, 'K', 3],[207.0, 2, 'T', 3],[229.0, 102, '%', 4]

(SO)
###Pressure induced superconductivity bordering a charge-density-wave state in NbTe4 with strong spinorbit coupling|Xiaojun Yang,Yonghui Zhou,Mengmeng Wang,Hua Bai,Xuliang Chen,Chao An,Ying Zhou,Qian Chen,Yupeng Li,Zhen Wang,Jian Chen,Chao Cao,Yuke Li,Yi Zhou,Zhaorong Yang,Zhu-An Xu###
(1065798, 1065801)
Here we report pressure induced superconductivity in a strong spin-orbit (SO)coupled quasi-one-dimensional (1D) transition-metal chalcogenide NbTe4,which is a CD<missing VAR>W material under ambient pressure.
Featurization successful!
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 12.4, 'GPa', 1],[114.0, 69, 'GPa', 2],[137.0, 2.2, 'K', 2],[153.0, 2, 'T', 2],[175.0, 102, '%', 3]

NbTe4
###Pressure induced superconductivity bordering a charge-density-wave state in NbTe4 with strong spinorbit coupling|Xiaojun Yang,Yonghui Zhou,Mengmeng Wang,Hua Bai,Xuliang Chen,Chao An,Ying Zhou,Qian Chen,Yupeng Li,Zhen Wang,Jian Chen,Chao Cao,Yuke Li,Yi Zhou,Zhaorong Yang,Zhu-An Xu###
(1065823, 1065825)
Here we report pressure induced superconductivity in a strong spin-orbit (SO)coupled quasi-one-dimensional (1D) transition-metal chalcogenide NbTe4,which is a CD<missing VAR>W material under ambient pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 12.4, 'GPa', 1],[90.0, 69, 'GPa', 2],[113.0, 2.2, 'K', 2],[129.0, 2, 'T', 2],[151.0, 102, '%', 3]

C
###Pressure induced superconductivity bordering a charge-density-wave state in NbTe4 with strong spinorbit coupling|Xiaojun Yang,Yonghui Zhou,Mengmeng Wang,Hua Bai,Xuliang Chen,Chao An,Ying Zhou,Qian Chen,Yupeng Li,Zhen Wang,Jian Chen,Chao Cao,Yuke Li,Yi Zhou,Zhaorong Yang,Zhu-An Xu###
(1065835, 1065835)
Here we report pressure induced superconductivity in a strong spin-orbit (SO)coupled quasi-one-dimensional (1D) transition-metal chalcogenide NbTe4,which is a CD<missing VAR>W material under ambient pressure.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 12.4, 'GPa', 1],[80.0, 69, 'GPa', 2],[103.0, 2.2, 'K', 2],[119.0, 2, 'T', 2],[141.0, 102, '%', 3]

W
###Pressure induced superconductivity bordering a charge-density-wave state in NbTe4 with strong spinorbit coupling|Xiaojun Yang,Yonghui Zhou,Mengmeng Wang,Hua Bai,Xuliang Chen,Chao An,Ying Zhou,Qian Chen,Yupeng Li,Zhen Wang,Jian Chen,Chao Cao,Yuke Li,Yi Zhou,Zhaorong Yang,Zhu-An Xu###
(1065837, 1065837)
Here we report pressure induced superconductivity in a strong spin-orbit (SO)coupled quasi-one-dimensional (1D) transition-metal chalcogenide NbTe4,which is a CD<missing VAR>W material under ambient pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 12.4, 'GPa', 1],[78.0, 69, 'GPa', 2],[101.0, 2.2, 'K', 2],[117.0, 2, 'T', 2],[139.0, 102, '%', 3]

C
###Pressure induced superconductivity bordering a charge-density-wave state in NbTe4 with strong spinorbit coupling|Xiaojun Yang,Yonghui Zhou,Mengmeng Wang,Hua Bai,Xuliang Chen,Chao An,Ying Zhou,Qian Chen,Yupeng Li,Zhen Wang,Jian Chen,Chao Cao,Yuke Li,Yi Zhou,Zhaorong Yang,Zhu-An Xu###
(1065858, 1065858)
 With increasing pressure, theCD<missing VAR>W transition temperature is gradually suppressed, and superconductingtransition, which is fingerprinted by a steep resistivity drop, emerges atpressures above 12.4 GPa.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 12.4, 'GPa', 0],[57.0, 69, 'GPa', 1],[80.0, 2.2, 'K', 1],[96.0, 2, 'T', 1],[118.0, 102, '%', 2]

W
###Pressure induced superconductivity bordering a charge-density-wave state in NbTe4 with strong spinorbit coupling|Xiaojun Yang,Yonghui Zhou,Mengmeng Wang,Hua Bai,Xuliang Chen,Chao An,Ying Zhou,Qian Chen,Yupeng Li,Zhen Wang,Jian Chen,Chao Cao,Yuke Li,Yi Zhou,Zhaorong Yang,Zhu-An Xu###
(1065860, 1065860)
 With increasing pressure, theCD<missing VAR>W transition temperature is gradually suppressed, and superconductingtransition, which is fingerprinted by a steep resistivity drop, emerges atpressures above 12.4 GPa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 12.4, 'GPa', 0],[55.0, 69, 'GPa', 1],[78.0, 2.2, 'K', 1],[94.0, 2, 'T', 1],[116.0, 102, '%', 2]

H
###Pressure induced superconductivity bordering a charge-density-wave state in NbTe4 with strong spinorbit coupling|Xiaojun Yang,Yonghui Zhou,Mengmeng Wang,Hua Bai,Xuliang Chen,Chao An,Ying Zhou,Qian Chen,Yupeng Li,Zhen Wang,Jian Chen,Chao Cao,Yuke Li,Yi Zhou,Zhaorong Yang,Zhu-An Xu###
(1065951, 1065951)
 Under pressure p<missing VAR>  69 GPa, zero resistance isdetected with a transition temperature Tc  2.2 K and an upper criticalfield Hc<missing VAR>2 2 T.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 12.4, 'GPa', 1],[36.0, 69, 'GPa', 0],[13.0, 2.2, 'K', 0],[3.0, 2, 'T', 0],[25.0, 102, '%', 1]

NbTe4
###Pressure induced superconductivity bordering a charge-density-wave state in NbTe4 with strong spinorbit coupling|Xiaojun Yang,Yonghui Zhou,Mengmeng Wang,Hua Bai,Xuliang Chen,Chao An,Ying Zhou,Qian Chen,Yupeng Li,Zhen Wang,Jian Chen,Chao Cao,Yuke Li,Yi Zhou,Zhaorong Yang,Zhu-An Xu###
(1065999, 1066001)
 We also find large magnetoresistance (MR) up to 102% atlow temperatures, which is a distinct feature differentiating NbTe4 fromother conventional CD<missing VAR>W materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 12.4, 'GPa', 2],[84.0, 69, 'GPa', 1],[61.0, 2.2, 'K', 1],[45.0, 2, 'T', 1],[23.0, 102, '%', 0]

C
###Pressure induced superconductivity bordering a charge-density-wave state in NbTe4 with strong spinorbit coupling|Xiaojun Yang,Yonghui Zhou,Mengmeng Wang,Hua Bai,Xuliang Chen,Chao An,Ying Zhou,Qian Chen,Yupeng Li,Zhen Wang,Jian Chen,Chao Cao,Yuke Li,Yi Zhou,Zhaorong Yang,Zhu-An Xu###
(1066010, 1066010)
 We also find large magnetoresistance (MR) up to 102% atlow temperatures, which is a distinct feature differentiating NbTe4 fromother conventional CD<missing VAR>W materials.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 12.4, 'GPa', 2],[95.0, 69, 'GPa', 1],[72.0, 2.2, 'K', 1],[56.0, 2, 'T', 1],[34.0, 102, '%', 0]

W
###Pressure induced superconductivity bordering a charge-density-wave state in NbTe4 with strong spinorbit coupling|Xiaojun Yang,Yonghui Zhou,Mengmeng Wang,Hua Bai,Xuliang Chen,Chao An,Ying Zhou,Qian Chen,Yupeng Li,Zhen Wang,Jian Chen,Chao Cao,Yuke Li,Yi Zhou,Zhaorong Yang,Zhu-An Xu###
(1066012, 1066012)
 We also find large magnetoresistance (MR) up to 102% atlow temperatures, which is a distinct feature differentiating NbTe4 fromother conventional CD<missing VAR>W materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 12.4, 'GPa', 2],[97.0, 69, 'GPa', 1],[74.0, 2.2, 'K', 1],[58.0, 2, 'T', 1],[36.0, 102, '%', 0]

Bi1.5Sb0.5Te1.7Se1.3
###Origin and evolution of surface spin current in topological insulators|André Dankert,Priyamvada Bhaskar,Dmitrii Khokhriakov,Isabel H. Rodrigues,Bogdan Karpiak,M. Venkata Kamalakar,Sophie Charpentier,Ion Garate,Saroj P. Dash###
(1066187, 1066194)
 We observe anenhancement of the spin signal due to surface-dominated spin polarization whilefreezing out the bulk conductivity in semiconducting Bi1.5Sb0.5Te1.7Se1.3 below100K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.26,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0.33999999999999997,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 2, 'and', 1],[40.0, 100, 'K', 1]

K
###Origin and evolution of surface spin current in topological insulators|André Dankert,Priyamvada Bhaskar,Dmitrii Khokhriakov,Isabel H. Rodrigues,Bogdan Karpiak,M. Venkata Kamalakar,Sophie Charpentier,Ion Garate,Saroj P. Dash###
(1066200, 1066200)
 We observe anenhancement of the spin signal due to surface-dominated spin polarization whilefreezing out the bulk conductivity in semiconducting Bi1.5Sb0.5Te1.7Se1.3 below100K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 2, 'and', 1],[34.0, 100, 'K', 1]

II
###Origin of planar Hall effect in type-II Weyl semimetal MoTe2|D. D. Liang,Y. J. Wang,W. L. Zhen,J. Yang,S. R. Weng,X. Yan,Y. Y. Han,W. Tong,L. Pi,W. K. Zhu,C. J. Zhang###
(1066340, 1066341)
Origin of planar Hall effect in type-II Weyl semimetal MoTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoTe2
###Origin of planar Hall effect in type-II Weyl semimetal MoTe2|D. D. Liang,Y. J. Wang,W. L. Zhen,J. Yang,S. R. Weng,X. Yan,Y. Y. Han,W. Tong,L. Pi,W. K. Zhu,C. J. Zhang###
(1066347, 1066349)
Origin of planar Hall effect in type-II Weyl semimetal MoTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PH
###Origin of planar Hall effect in type-II Weyl semimetal MoTe2|D. D. Liang,Y. J. Wang,W. L. Zhen,J. Yang,S. R. Weng,X. Yan,Y. Y. Han,W. Tong,L. Pi,W. K. Zhu,C. J. Zhang###
(1066376, 1066377)
 Besides the negative longitudinal magnetoresistance (MR), planar Hall effect(PHE) is a newly emerging experimental tool to test the chiral anomaly ornontrivial Berry curvature in Weyl semimetals (WSMs).
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WS
###Origin of planar Hall effect in type-II Weyl semimetal MoTe2|D. D. Liang,Y. J. Wang,W. L. Zhen,J. Yang,S. R. Weng,X. Yan,Y. Y. Han,W. Tong,L. Pi,W. K. Zhu,C. J. Zhang###
(1066419, 1066420)
 Besides the negative longitudinal magnetoresistance (MR), planar Hall effect(PHE) is a newly emerging experimental tool to test the chiral anomaly ornontrivial Berry curvature in Weyl semimetals (WSMs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PH
###Origin of planar Hall effect in type-II Weyl semimetal MoTe2|D. D. Liang,Y. J. Wang,W. L. Zhen,J. Yang,S. R. Weng,X. Yan,Y. Y. Han,W. Tong,L. Pi,W. K. Zhu,C. J. Zhang###
(1066435, 1066436)
 However, the origins ofPHE<missing VAR> in various systems are not fully distinguished and understood.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PH
###Origin of planar Hall effect in type-II Weyl semimetal MoTe2|D. D. Liang,Y. J. Wang,W. L. Zhen,J. Yang,S. R. Weng,X. Yan,Y. Y. Han,W. Tong,L. Pi,W. K. Zhu,C. J. Zhang###
(1066475, 1066476)
 Here weperform a systematic study on the PHE<missing VAR> and anisotropic MR (AMR) of Td-MoTe2, atype-II WSM<missing VAR>.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoTe2
###Origin of planar Hall effect in type-II Weyl semimetal MoTe2|D. D. Liang,Y. J. Wang,W. L. Zhen,J. Yang,S. R. Weng,X. Yan,Y. Y. Han,W. Tong,L. Pi,W. K. Zhu,C. J. Zhang###
(1066496, 1066498)
 Here weperform a systematic study on the PHE<missing VAR> and anisotropic MR (AMR) of Td-MoTe2, atype-II WSM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Origin of planar Hall effect in type-II Weyl semimetal MoTe2|D. D. Liang,Y. J. Wang,W. L. Zhen,J. Yang,S. R. Weng,X. Yan,Y. Y. Han,W. Tong,L. Pi,W. K. Zhu,C. J. Zhang###
(1066506, 1066507)
 Here weperform a systematic study on the PHE<missing VAR> and anisotropic MR (AMR) of Td-MoTe2, atype-II WSM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WS
###Origin of planar Hall effect in type-II Weyl semimetal MoTe2|D. D. Liang,Y. J. Wang,W. L. Zhen,J. Yang,S. R. Weng,X. Yan,Y. Y. Han,W. Tong,L. Pi,W. K. Zhu,C. J. Zhang###
(1066509, 1066510)
 Here weperform a systematic study on the PHE<missing VAR> and anisotropic MR (AMR) of Td-MoTe2, atype-II WSM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PH
###Origin of planar Hall effect in type-II Weyl semimetal MoTe2|D. D. Liang,Y. J. Wang,W. L. Zhen,J. Yang,S. R. Weng,X. Yan,Y. Y. Han,W. Tong,L. Pi,W. K. Zhu,C. J. Zhang###
(1066518, 1066519)
 Although the PHE<missing VAR> and AMR curves can be well fitted by thetheoretical formulas, we demonstrate that the anisotropic resistivity arisesfrom the orbital MR (OMR), instead of the negative MR as expected in the chiralanomaly effect.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Origin of planar Hall effect in type-II Weyl semimetal MoTe2|D. D. Liang,Y. J. Wang,W. L. Zhen,J. Yang,S. R. Weng,X. Yan,Y. Y. Han,W. Tong,L. Pi,W. K. Zhu,C. J. Zhang###
(1066573, 1066573)
 Although the PHE<missing VAR> and AMR curves can be well fitted by thetheoretical formulas, we demonstrate that the anisotropic resistivity arisesfrom the orbital MR (OMR), instead of the negative MR as expected in the chiralanomaly effect.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Origin of planar Hall effect in type-II Weyl semimetal MoTe2|D. D. Liang,Y. J. Wang,W. L. Zhen,J. Yang,S. R. Weng,X. Yan,Y. Y. Han,W. Tong,L. Pi,W. K. Zhu,C. J. Zhang###
(1066606, 1066606)
 In contrast, the absence of negative MR indicates that thelarge OMR dominates over the chiral anomaly effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Origin of planar Hall effect in type-II Weyl semimetal MoTe2|D. D. Liang,Y. J. Wang,W. L. Zhen,J. Yang,S. R. Weng,X. Yan,Y. Y. Han,W. Tong,L. Pi,W. K. Zhu,C. J. Zhang###
(1066631, 1066631)
 In contrast, the absence of negative MR indicates that thelarge OMR dominates over the chiral anomaly effect.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Origin of planar Hall effect in type-II Weyl semimetal MoTe2|D. D. Liang,Y. J. Wang,W. L. Zhen,J. Yang,S. R. Weng,X. Yan,Y. Y. Han,W. Tong,L. Pi,W. K. Zhu,C. J. Zhang###
(1066674, 1066675)
 This explains why it isdifficult to measure negative MR in type-II WSMs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WS
###Origin of planar Hall effect in type-II Weyl semimetal MoTe2|D. D. Liang,Y. J. Wang,W. L. Zhen,J. Yang,S. R. Weng,X. Yan,Y. Y. Han,W. Tong,L. Pi,W. K. Zhu,C. J. Zhang###
(1066677, 1066678)
 This explains why it isdifficult to measure negative MR in type-II WSMs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PH
###Origin of planar Hall effect in type-II Weyl semimetal MoTe2|D. D. Liang,Y. J. Wang,W. L. Zhen,J. Yang,S. R. Weng,X. Yan,Y. Y. Han,W. Tong,L. Pi,W. K. Zhu,C. J. Zhang###
(1066693, 1066694)
 We argue that the measuredPHE<missing VAR> can be related with the chiral anomaly only when the negative MR issimultaneously observed.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PbTe
###Quantitative evaluation of Dirac physics in PbTe|Kazuto Akiba,Atsushi Miyake,Hideaki Sakai,Keisuke Katayama,Hiroshi Murakawa,Noriaki Hanasaki,Sadao Takaoka,Yoshiki Nakanishi,Masahito Yoshizawa,Masashi Tokunaga###
(1066750, 1066751)
Quantitative evaluation of Dirac physics in PbTe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 55, 'T', 1],[181.0, 28, ',', 8],[183.0, 31, 'LT', 8],[200.0, 0.52, 'and', 9],[201.0, 0.57, 'in', 9]

PbTe
###Quantitative evaluation of Dirac physics in PbTe|Kazuto Akiba,Atsushi Miyake,Hideaki Sakai,Keisuke Katayama,Hiroshi Murakawa,Noriaki Hanasaki,Sadao Takaoka,Yoshiki Nakanishi,Masahito Yoshizawa,Masashi Tokunaga###
(1066787, 1066788)
 The magnetic field dependence of electronic transport, magnetic, and elasticproperties in single crystals of PbTe were investigated in high magnetic fieldsup to 55 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 55, 'T', 0],[144.0, 28, ',', 7],[146.0, 31, 'LT', 7],[163.0, 0.52, 'and', 8],[164.0, 0.57, 'in', 8]

H
###Quantitative evaluation of Dirac physics in PbTe|Kazuto Akiba,Atsushi Miyake,Hideaki Sakai,Keisuke Katayama,Hiroshi Murakawa,Noriaki Hanasaki,Sadao Takaoka,Yoshiki Nakanishi,Masahito Yoshizawa,Masashi Tokunaga###
(1066906, 1066906)
 The ratio of the Zeeman to the cyclotron energy, which is regarded asan index of Diracness [H.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 55, 'T', 2],[26.0, 28, ',', 5],[28.0, 31, 'LT', 5],[45.0, 0.52, 'and', 6],[46.0, 0.57, 'in', 6]

Y
###Quantitative evaluation of Dirac physics in PbTe|Kazuto Akiba,Atsushi Miyake,Hideaki Sakai,Keisuke Katayama,Hiroshi Murakawa,Noriaki Hanasaki,Sadao Takaoka,Yoshiki Nakanishi,Masahito Yoshizawa,Masashi Tokunaga###
(1066913, 1066913)
 Hayasaka and Y.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 55, 'T', 3],[19.0, 28, ',', 4],[21.0, 31, 'LT', 4],[38.0, 0.52, 'and', 5],[39.0, 0.57, 'in', 5]

Ag
###Chemical stability and superconductivity in Ag-sheathed CaKFe4As4 superconducting tapes|Zhe Cheng,Chiheng Dong,He Huang,Shifa Liu,Yanchang Zhu,Dongliang Wang,Vitalii Vlasko-Vlasov,Ulrich Welp,Wai-Kwong Kwok,Yanwei Ma###
(1067054, 1067054)
Chemical stability and superconductivity in Ag-sheathed CaKFe4As4 superconducting tapes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 500, 'C', 4],[159.0, 0, 'T', 4],[161.0, 2.7, 'x', 4]

CaKFe4As4
###Chemical stability and superconductivity in Ag-sheathed CaKFe4As4 superconducting tapes|Zhe Cheng,Chiheng Dong,He Huang,Shifa Liu,Yanchang Zhu,Dongliang Wang,Vitalii Vlasko-Vlasov,Ulrich Welp,Wai-Kwong Kwok,Yanwei Ma###
(1067058, 1067063)
Chemical stability and superconductivity in Ag-sheathed CaKFe4As4 superconducting tapes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0.1,0,0,0,0,0,0.4,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 500, 'C', 4],[150.0, 0, 'T', 4],[152.0, 2.7, 'x', 4]

Ag
###Chemical stability and superconductivity in Ag-sheathed CaKFe4As4 superconducting tapes|Zhe Cheng,Chiheng Dong,He Huang,Shifa Liu,Yanchang Zhu,Dongliang Wang,Vitalii Vlasko-Vlasov,Ulrich Welp,Wai-Kwong Kwok,Yanwei Ma###
(1067070, 1067070)
 Ag-sheathed CaKFe4As4 superconducting tapes have been fabricated via theex-situ powder-in-tube method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 500, 'C', 3],[143.0, 0, 'T', 3],[145.0, 2.7, 'x', 3]

CaKFe4As4
###Chemical stability and superconductivity in Ag-sheathed CaKFe4As4 superconducting tapes|Zhe Cheng,Chiheng Dong,He Huang,Shifa Liu,Yanchang Zhu,Dongliang Wang,Vitalii Vlasko-Vlasov,Ulrich Welp,Wai-Kwong Kwok,Yanwei Ma###
(1067074, 1067079)
 Ag-sheathed CaKFe4As4 superconducting tapes have been fabricated via theex-situ powder-in-tube method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0.1,0,0,0,0,0,0.4,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 500, 'C', 3],[134.0, 0, 'T', 3],[136.0, 2.7, 'x', 3]

CaKFe4As4
###Chemical stability and superconductivity in Ag-sheathed CaKFe4As4 superconducting tapes|Zhe Cheng,Chiheng Dong,He Huang,Shifa Liu,Yanchang Zhu,Dongliang Wang,Vitalii Vlasko-Vlasov,Ulrich Welp,Wai-Kwong Kwok,Yanwei Ma###
(1067128, 1067133)
 Thermal and X<missing VAR>-ray diffraction analyses suggestthat the CaKFe4As4 phase is unstable at high temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0.1,0,0,0,0,0,0.4,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 500, 'C', 2],[80.0, 0, 'T', 2],[82.0, 2.7, 'x', 2]

CaAgAs
###Chemical stability and superconductivity in Ag-sheathed CaKFe4As4 superconducting tapes|Zhe Cheng,Chiheng Dong,He Huang,Shifa Liu,Yanchang Zhu,Dongliang Wang,Vitalii Vlasko-Vlasov,Ulrich Welp,Wai-Kwong Kwok,Yanwei Ma###
(1067157, 1067159)
 It decomposes intothe CaAgAs phase which reacts strongly with the silver sheath.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 500, 'C', 1],[54.0, 0, 'T', 1],[56.0, 2.7, 'x', 1]

K
###Chemical stability and superconductivity in Ag-sheathed CaKFe4As4 superconducting tapes|Zhe Cheng,Chiheng Dong,He Huang,Shifa Liu,Yanchang Zhu,Dongliang Wang,Vitalii Vlasko-Vlasov,Ulrich Welp,Wai-Kwong Kwok,Yanwei Ma###
(1067211, 1067211)
 We thereforesintered the tape at 500C and obtain a transport critical current densityJc(4.2 K, 0 T) 2.7x104 A/cm2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 500, 'C', 0],[2.0, 0, 'T', 0],[4.0, 2.7, 'x', 0]

Sr
###Chemical stability and superconductivity in Ag-sheathed CaKFe4As4 superconducting tapes|Zhe Cheng,Chiheng Dong,He Huang,Shifa Liu,Yanchang Zhu,Dongliang Wang,Vitalii Vlasko-Vlasov,Ulrich Welp,Wai-Kwong Kwok,Yanwei Ma###
(1067264, 1067264)
 The pinning potential derived frommagnetoresistance measurements is one order of magnitude lower than that of the(Ba/Sr)1-x<missing VAR>KxFe2As2 tapes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 500, 'C', 1],[51.0, 0, 'T', 1],[49.0, 2.7, 'x', 1]

Fe2As2
###Chemical stability and superconductivity in Ag-sheathed CaKFe4As4 superconducting tapes|Zhe Cheng,Chiheng Dong,He Huang,Shifa Liu,Yanchang Zhu,Dongliang Wang,Vitalii Vlasko-Vlasov,Ulrich Welp,Wai-Kwong Kwok,Yanwei Ma###
(1067270, 1067273)
 The pinning potential derived frommagnetoresistance measurements is one order of magnitude lower than that of the(Ba/Sr)1-x<missing VAR>KxFe2As2 tapes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 500, 'C', 1],[57.0, 0, 'T', 1],[55.0, 2.7, 'x', 1]

Sr2FeMoO6
###Origin of the unconventional magnetoresistance in Sr2FeMoO6|Sugata Ray,Srimanta Middey,Somnath Jana,A. Banerjee,P. Sanyal,Rajeev Rawat,Luca Gregoratti,D. D. Sarma###
(1067427, 1067432)
Origin of the unconventional magnetoresistance in Sr2FeMoO6.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr2FeMoO6
###Origin of the unconventional magnetoresistance in Sr2FeMoO6|Sugata Ray,Srimanta Middey,Somnath Jana,A. Banerjee,P. Sanyal,Rajeev Rawat,Luca Gregoratti,D. D. Sarma###
(1067450, 1067455)
 The unusual magnetoresistance (MR) behavior in Sr2FeMoO6, recently termed asspin-valve type MR (SVMR), presents several anomalies that are littleunderstood so far.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SV
###Origin of the unconventional magnetoresistance in Sr2FeMoO6|Sugata Ray,Srimanta Middey,Somnath Jana,A. Banerjee,P. Sanyal,Rajeev Rawat,Luca Gregoratti,D. D. Sarma###
(1067475, 1067476)
 The unusual magnetoresistance (MR) behavior in Sr2FeMoO6, recently termed asspin-valve type MR (SVMR), presents several anomalies that are littleunderstood so far.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Origin of the unconventional magnetoresistance in Sr2FeMoO6|Sugata Ray,Srimanta Middey,Somnath Jana,A. Banerjee,P. Sanyal,Rajeev Rawat,Luca Gregoratti,D. D. Sarma###
(1067624, 1067624)
 The present study unravels a spin-glass (SG)like surface layer around each soft ferromagnetic (FM) grain of Sr2FeMoO6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Origin of the unconventional magnetoresistance in Sr2FeMoO6|Sugata Ray,Srimanta Middey,Somnath Jana,A. Banerjee,P. Sanyal,Rajeev Rawat,Luca Gregoratti,D. D. Sarma###
(1067644, 1067644)
 The present study unravels a spin-glass (SG)like surface layer around each soft ferromagnetic (FM) grain of Sr2FeMoO6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr2FeMoO6
###Origin of the unconventional magnetoresistance in Sr2FeMoO6|Sugata Ray,Srimanta Middey,Somnath Jana,A. Banerjee,P. Sanyal,Rajeev Rawat,Luca Gregoratti,D. D. Sarma###
(1067652, 1067657)
 The present study unravels a spin-glass (SG)like surface layer around each soft ferromagnetic (FM) grain of Sr2FeMoO6.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbN
###Phase diagram of a strongly disordered s-wave superconductor, NbN, close to the metal-insulator transition|Madhavi Chand,Garima Saraswat,Anand Kamlapure,Mintu Mondal,Sanjeev Kumar,John Jesudasan,Vivas Bagwe,Lara Benfatto,Vikram Tripathi,Pratap Raychaudhuri###
(1067755, 1067756)
Phase diagram of a strongly disordered s<missing VAR>-wave superconductor, NbN, close to the metal-insulator transition.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 3, 'different', 3]

NbN
###Phase diagram of a strongly disordered s-wave superconductor, NbN, close to the metal-insulator transition|Madhavi Chand,Garima Saraswat,Anand Kamlapure,Mintu Mondal,Sanjeev Kumar,John Jesudasan,Vivas Bagwe,Lara Benfatto,Vikram Tripathi,Pratap Raychaudhuri###
(1067798, 1067799)
 We present a phase diagram as a function of disorder in three-dimensional NbNthin films, as the system enters the critical disorder for the destruction ofthe superconducting state.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 3, 'different', 2]

At
###Phase diagram of a strongly disordered s-wave superconductor, NbN, close to the metal-insulator transition|Madhavi Chand,Garima Saraswat,Anand Kamlapure,Mintu Mondal,Sanjeev Kumar,John Jesudasan,Vivas Bagwe,Lara Benfatto,Vikram Tripathi,Pratap Raychaudhuri###
(1067880, 1067880)
 At low disorder the (kFl10-4),the system follows the mean field Bardeen-Cooper-Schrieffer behavior where thesuperconducting energy gap vanishes at the temperature where electricalresistance appears.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 3, 'different', 1]

Tc
###Phase diagram of a strongly disordered s-wave superconductor, NbN, close to the metal-insulator transition|Madhavi Chand,Garima Saraswat,Anand Kamlapure,Mintu Mondal,Sanjeev Kumar,John Jesudasan,Vivas Bagwe,Lara Benfatto,Vikram Tripathi,Pratap Raychaudhuri###
(1068000, 1068000)
 For stronger disorder (kFl<4) a pseudogap stateemerges where a gap in the electronic spectrum persists up to temperatures muchhigher than Tc, suggesting that Cooper pairs continue to exist in the systemeven after the zero resistance state is destroyed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 3, 'different', 2]

La1.9Sr0.1CuO4
###Transport and spectroscopic properties of superconductor - ferromagnet - superconductor junctions of $La_{1.9}Sr_{0.1}CuO_4$ - $La_{0.67}Ca_{0.33}MnO_3$ - $La_{1.9}Sr_{0.1}CuO_4$|Gad Koren,Tal Kirzhner###
(1068156, 1068162)
Transport and spectroscopic properties of superconductor - ferromagnet - superconductor junctions of La1.9Sr0.1CuO4 - La0.67Ca0.33MnO3 - La1.9Sr0.1CuO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0.014285714285714287,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[225.0, 5, 'or', 5],[226.0, 6, 'T', 5],[233.0, 0, 'T', 5],[306.0, 12, 'nm', 6],[332.0, 12, 'nm', 7]

La0.67Ca0.33MnO3
###Transport and spectroscopic properties of superconductor - ferromagnet - superconductor junctions of $La_{1.9}Sr_{0.1}CuO_4$ - $La_{0.67}Ca_{0.33}MnO_3$ - $La_{1.9}Sr_{0.1}CuO_4$|Gad Koren,Tal Kirzhner###
(1068166, 1068172)
Transport and spectroscopic properties of superconductor - ferromagnet - superconductor junctions of La1.9Sr0.1CuO4 - La0.67Ca0.33MnO3 - La1.9Sr0.1CuO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.066,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.134,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[215.0, 5, 'or', 5],[216.0, 6, 'T', 5],[223.0, 0, 'T', 5],[296.0, 12, 'nm', 6],[322.0, 12, 'nm', 7]

La1.9Sr0.1CuO4
###Transport and spectroscopic properties of superconductor - ferromagnet - superconductor junctions of $La_{1.9}Sr_{0.1}CuO_4$ - $La_{0.67}Ca_{0.33}MnO_3$ - $La_{1.9}Sr_{0.1}CuO_4$|Gad Koren,Tal Kirzhner###
(1068176, 1068182)
Transport and spectroscopic properties of superconductor - ferromagnet - superconductor junctions of La1.9Sr0.1CuO4 - La0.67Ca0.33MnO3 - La1.9Sr0.1CuO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0.014285714285714287,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, 5, 'or', 5],[206.0, 6, 'T', 5],[213.0, 0, 'T', 5],[286.0, 12, 'nm', 6],[312.0, 12, 'nm', 7]

La1.9Sr0.1CuO4
###Transport and spectroscopic properties of superconductor - ferromagnet - superconductor junctions of $La_{1.9}Sr_{0.1}CuO_4$ - $La_{0.67}Ca_{0.33}MnO_3$ - $La_{1.9}Sr_{0.1}CuO_4$|Gad Koren,Tal Kirzhner###
(1068212, 1068218)
 Transport and Conductance spectra measurements of ramp-type junctions made ofcuprate superconducting La1.9Sr0.1CuO4 electrodes and a manganiteferromagnetic La0.67Ca0.33MnO3 barrier are reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0.014285714285714287,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 5, 'or', 4],[170.0, 6, 'T', 4],[177.0, 0, 'T', 4],[250.0, 12, 'nm', 5],[276.0, 12, 'nm', 6]

La0.67Ca0.33MnO3
###Transport and spectroscopic properties of superconductor - ferromagnet - superconductor junctions of $La_{1.9}Sr_{0.1}CuO_4$ - $La_{0.67}Ca_{0.33}MnO_3$ - $La_{1.9}Sr_{0.1}CuO_4$|Gad Koren,Tal Kirzhner###
(1068231, 1068237)
 Transport and Conductance spectra measurements of ramp-type junctions made ofcuprate superconducting La1.9Sr0.1CuO4 electrodes and a manganiteferromagnetic La0.67Ca0.33MnO3 barrier are reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.066,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.134,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 5, 'or', 4],[151.0, 6, 'T', 4],[158.0, 0, 'T', 4],[231.0, 12, 'nm', 5],[257.0, 12, 'nm', 6]

At
###Transport and spectroscopic properties of superconductor - ferromagnet - superconductor junctions of $La_{1.9}Sr_{0.1}CuO_4$ - $La_{0.67}Ca_{0.33}MnO_3$ - $La_{1.9}Sr_{0.1}CuO_4$|Gad Koren,Tal Kirzhner###
(1068246, 1068246)
 At lowtemperatures below Tc, the conductance spectra show Andreev-like broad peakssuperposed on a tunneling-like background, and sometimes also sub-gap Andreevresonances.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 5, 'or', 3],[142.0, 6, 'T', 3],[149.0, 0, 'T', 3],[222.0, 12, 'nm', 4],[248.0, 12, 'nm', 5]

V
###Transport and spectroscopic properties of superconductor - ferromagnet - superconductor junctions of $La_{1.9}Sr_{0.1}CuO_4$ - $La_{0.67}Ca_{0.33}MnO_3$ - $La_{1.9}Sr_{0.1}CuO_4$|Gad Koren,Tal Kirzhner###
(1068339, 1068339)
 The energy gap values Delta found from fits of the data rangedmostly between 7-10 m<missing VAR>V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 5, 'or', 2],[49.0, 6, 'T', 2],[56.0, 0, 'T', 2],[129.0, 12, 'nm', 3],[155.0, 12, 'nm', 4]

As
###Transport and spectroscopic properties of superconductor - ferromagnet - superconductor junctions of $La_{1.9}Sr_{0.1}CuO_4$ - $La_{0.67}Ca_{0.33}MnO_3$ - $La_{1.9}Sr_{0.1}CuO_4$|Gad Koren,Tal Kirzhner###
(1068342, 1068342)
 As usual, the gap features were suppressed undermagnetic fields but revealed the tunneling-like conductance background.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 5, 'or', 1],[46.0, 6, 'T', 1],[53.0, 0, 'T', 1],[126.0, 12, 'nm', 2],[152.0, 12, 'nm', 3]

O
###Transport and spectroscopic properties of superconductor - ferromagnet - superconductor junctions of $La_{1.9}Sr_{0.1}CuO_4$ - $La_{0.67}Ca_{0.33}MnO_3$ - $La_{1.9}Sr_{0.1}CuO_4$|Gad Koren,Tal Kirzhner###
(1068475, 1068475)
 A signature of superparamagnetism was found in theconductance spectra of junctions with a 12 nm thick LCMO barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 5, 'or', 1],[87.0, 6, 'T', 1],[80.0, 0, 'T', 1],[7.0, 12, 'nm', 0],[19.0, 12, 'nm', 1]

HoAl2
###Magnetic and magnetoresistive properties of cubic Laves phase HoAl$_2$ single crystal|M. Patra,S. Majumdar,S. Giri,Y. Xiao,T. Chatterji###
(1068559, 1068561)
Magnetic and magnetoresistive properties of cubic Laves phase HoAl2 single crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 100, '>', 1],[52.0, 110, '>', 1],[110.0, 31.5, 'K', 2],[150.0, 110, '>', 3],[160.0, 100, '>', 3],[233.0, 100, '>', 4]

HoAl2
###Magnetic and magnetoresistive properties of cubic Laves phase HoAl$_2$ single crystal|M. Patra,S. Majumdar,S. Giri,Y. Xiao,T. Chatterji###
(1068594, 1068596)
 We report the magnetization (M) and magnetoresistance (MR) results ofHoAl2 single crystals oriented along <100> and <110> directions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 100, '>', 0],[17.0, 110, '>', 0],[75.0, 31.5, 'K', 1],[115.0, 110, '>', 2],[125.0, 100, '>', 2],[198.0, 100, '>', 3]

HoAl2
###Magnetic and magnetoresistive properties of cubic Laves phase HoAl$_2$ single crystal|M. Patra,S. Majumdar,S. Giri,Y. Xiao,T. Chatterji###
(1068622, 1068624)
Although HoAl2 has cubic Laves phase structure, a large anisotropy isobserved in M<missing VAR> and MR results below Curie temperature (T<missing VAR>C) at 31.5 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 100, '>', 1],[9.0, 110, '>', 1],[47.0, 31.5, 'K', 0],[87.0, 110, '>', 1],[97.0, 100, '>', 1],[170.0, 100, '>', 2]

C
###Magnetic and magnetoresistive properties of cubic Laves phase HoAl$_2$ single crystal|M. Patra,S. Majumdar,S. Giri,Y. Xiao,T. Chatterji###
(1068667, 1068667)
Although HoAl2 has cubic Laves phase structure, a large anisotropy isobserved in M<missing VAR> and MR results below Curie temperature (T<missing VAR>C) at 31.5 K.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 100, '>', 1],[54.0, 110, '>', 1],[4.0, 31.5, 'K', 0],[44.0, 110, '>', 1],[54.0, 100, '>', 1],[127.0, 100, '>', 2]

S
###Magnetic and magnetoresistive properties of cubic Laves phase HoAl$_2$ single crystal|M. Patra,S. Majumdar,S. Giri,Y. Xiao,T. Chatterji###
(1068692, 1068692)
 Asatisfactory correlation between magnetic entropy change (Delta SM) and MRcould be established along <110> direction and in <100> direction exceptfor the temperature (T) region, around which spin reorientation takes place.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 100, '>', 2],[79.0, 110, '>', 2],[21.0, 31.5, 'K', 1],[19.0, 110, '>', 0],[29.0, 100, '>', 0],[102.0, 100, '>', 1]

S
###Magnetic and magnetoresistive properties of cubic Laves phase HoAl$_2$ single crystal|M. Patra,S. Majumdar,S. Giri,Y. Xiao,T. Chatterji###
(1068835, 1068835)
 A theoretical modelbased on Landau theory of phase transition can describe T<missing VAR>-variation of-Delta SM<missing VAR> for T<missing VAR> > T<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[228.0, 100, '>', 4],[222.0, 110, '>', 4],[164.0, 31.5, 'K', 3],[124.0, 110, '>', 2],[114.0, 100, '>', 2],[41.0, 100, '>', 1]

C
###Magnetic and magnetoresistive properties of cubic Laves phase HoAl$_2$ single crystal|M. Patra,S. Majumdar,S. Giri,Y. Xiao,T. Chatterji###
(1068845, 1068845)
 A theoretical modelbased on Landau theory of phase transition can describe T<missing VAR>-variation of-Delta SM<missing VAR> for T<missing VAR> > T<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[238.0, 100, '>', 4],[232.0, 110, '>', 4],[174.0, 31.5, 'K', 3],[134.0, 110, '>', 2],[124.0, 100, '>', 2],[51.0, 100, '>', 1]

F
###Magnetotransport properties of iron microwires fabricated by focused electron beam induced autocatalytic growth|F. Porrati,R. Sachser,M. -M. Walz,F. Vollnhals,H. -P. Steinrück,H. Marbach,M. Huth###
(1068913, 1068913)
 We have prepared iron microwires in a combination of focused electron beaminduced deposition (FE<missing VAR>BID) and autocatalytic growth from the ironpentacarbonyl, Fe(CO)5, precursor gas under UHV conditions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 4.2, 'K', 2]

BI
###Magnetotransport properties of iron microwires fabricated by focused electron beam induced autocatalytic growth|F. Porrati,R. Sachser,M. -M. Walz,F. Vollnhals,H. -P. Steinrück,H. Marbach,M. Huth###
(1068915, 1068916)
 We have prepared iron microwires in a combination of focused electron beaminduced deposition (FE<missing VAR>BID) and autocatalytic growth from the ironpentacarbonyl, Fe(CO)5, precursor gas under UHV conditions.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[159.0, 4.2, 'K', 2]

Fe(CO)5
###Magnetotransport properties of iron microwires fabricated by focused electron beam induced autocatalytic growth|F. Porrati,R. Sachser,M. -M. Walz,F. Vollnhals,H. -P. Steinrück,H. Marbach,M. Huth###
(1068936, 1068941)
 We have prepared iron microwires in a combination of focused electron beaminduced deposition (FE<missing VAR>BID) and autocatalytic growth from the ironpentacarbonyl, Fe(CO)5, precursor gas under UHV conditions.
Featurization terminated normally.
0,0,0,0,0,0.45454545454545453,0,0.45454545454545453,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.09090909090909091,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 4.2, 'K', 2]

UHV
###Magnetotransport properties of iron microwires fabricated by focused electron beam induced autocatalytic growth|F. Porrati,R. Sachser,M. -M. Walz,F. Vollnhals,H. -P. Steinrück,H. Marbach,M. Huth###
(1068950, 1068952)
 We have prepared iron microwires in a combination of focused electron beaminduced deposition (FE<missing VAR>BID) and autocatalytic growth from the ironpentacarbonyl, Fe(CO)5, precursor gas under UHV conditions.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[123.0, 4.2, 'K', 2]

In
###Magnetotransport properties of iron microwires fabricated by focused electron beam induced autocatalytic growth|F. Porrati,R. Sachser,M. -M. Walz,F. Vollnhals,H. -P. Steinrück,H. Marbach,M. Huth###
(1069039, 1069039)
 In order to investigate the magnetotransport properties wehave measured the isothermal Hall-resistivities in the range between 4.2 K and260 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 4.2, 'K', 0]

K
###Magnetotransport properties of iron microwires fabricated by focused electron beam induced autocatalytic growth|F. Porrati,R. Sachser,M. -M. Walz,F. Vollnhals,H. -P. Steinrück,H. Marbach,M. Huth###
(1069082, 1069082)
 In order to investigate the magnetotransport properties wehave measured the isothermal Hall-resistivities in the range between 4.2 K and260 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 4.2, 'K', 0]

N
###Magnetotransport properties of iron microwires fabricated by focused electron beam induced autocatalytic growth|F. Porrati,R. Sachser,M. -M. Walz,F. Vollnhals,H. -P. Steinrück,H. Marbach,M. Huth###
(1069133, 1069133)
 The relation between anomalous Hallresistivity (rhoAN) and longitudinal resistivity is quadratic, rhoAN rho2 xx,revealing an intrinsic origin of the anomalous Hall effect.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 4.2, 'K', 2]

N
###Magnetotransport properties of iron microwires fabricated by focused electron beam induced autocatalytic growth|F. Porrati,R. Sachser,M. -M. Walz,F. Vollnhals,H. -P. Steinrück,H. Marbach,M. Huth###
(1069149, 1069149)
 The relation between anomalous Hallresistivity (rhoAN) and longitudinal resistivity is quadratic, rhoAN rho2 xx,revealing an intrinsic origin of the anomalous Hall effect.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 4.2, 'K', 2]

Nd1-xSr
###Spin-wave excitations in the ferromagnetic-metallic and in the charge, orbital and spin ordered states in Nd$_{1-x}$Sr$_{x}$MnO$_{3}$ with x$\approx$0.5|H. Ulbrich,F. Krüger,A. A. Nugroho,D. Lamago,Y. Sidis,M. Braden###
(1069258, 1069262)
Spin-wave excitations in the ferromagnetic-metallic and in the charge, orbital and spin ordered states in Nd1-xSrx<missing VAR>MnO3 with x<missing VAR>approx0.5.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

MnO3
###Spin-wave excitations in the ferromagnetic-metallic and in the charge, orbital and spin ordered states in Nd$_{1-x}$Sr$_{x}$MnO$_{3}$ with x$\approx$0.5|H. Ulbrich,F. Krüger,A. A. Nugroho,D. Lamago,Y. Sidis,M. Braden###
(1069264, 1069266)
Spin-wave excitations in the ferromagnetic-metallic and in the charge, orbital and spin ordered states in Nd1-xSrx<missing VAR>MnO3 with x<missing VAR>approx0.5.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nd1-xSr
###Spin-wave excitations in the ferromagnetic-metallic and in the charge, orbital and spin ordered states in Nd$_{1-x}$Sr$_{x}$MnO$_{3}$ with x$\approx$0.5|H. Ulbrich,F. Krüger,A. A. Nugroho,D. Lamago,Y. Sidis,M. Braden###
(1069298, 1069302)
 Inelastic neutron scattering experiments have been performed on singlecrystals of Nd1-xSrx<missing VAR>MnO3 with x<missing VAR>approx0.5.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

MnO3
###Spin-wave excitations in the ferromagnetic-metallic and in the charge, orbital and spin ordered states in Nd$_{1-x}$Sr$_{x}$MnO$_{3}$ with x$\approx$0.5|H. Ulbrich,F. Krüger,A. A. Nugroho,D. Lamago,Y. Sidis,M. Braden###
(1069304, 1069306)
 Inelastic neutron scattering experiments have been performed on singlecrystals of Nd1-xSrx<missing VAR>MnO3 with x<missing VAR>approx0.5.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Spin-wave excitations in the ferromagnetic-metallic and in the charge, orbital and spin ordered states in Nd$_{1-x}$Sr$_{x}$MnO$_{3}$ with x$\approx$0.5|H. Ulbrich,F. Krüger,A. A. Nugroho,D. Lamago,Y. Sidis,M. Braden###
(1069321, 1069321)
 Colossalmagnetoresistance (CMR) in the manganites arises from the interplay between aferromagnetic metallic and antiferromagnetic charge and orbital orderedinsulating state.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Spin-wave excitations in the ferromagnetic-metallic and in the charge, orbital and spin ordered states in Nd$_{1-x}$Sr$_{x}$MnO$_{3}$ with x$\approx$0.5|H. Ulbrich,F. Krüger,A. A. Nugroho,D. Lamago,Y. Sidis,M. Braden###
(1069418, 1069418)
 Our investigationsof the spin-wave disperion in the AFM<missing VAR> ordered state ofNd0.5Sr0.5MnO3 exhibits a strongly anisotropic stiffness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nd0.5Sr0.5MnO3
###Spin-wave excitations in the ferromagnetic-metallic and in the charge, orbital and spin ordered states in Nd$_{1-x}$Sr$_{x}$MnO$_{3}$ with x$\approx$0.5|H. Ulbrich,F. Krüger,A. A. Nugroho,D. Lamago,Y. Sidis,M. Braden###
(1069428, 1069434)
 Our investigationsof the spin-wave disperion in the AFM<missing VAR> ordered state ofNd0.5Sr0.5MnO3 exhibits a strongly anisotropic stiffness.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nd1-xSr
###Spin-wave excitations in the ferromagnetic-metallic and in the charge, orbital and spin ordered states in Nd$_{1-x}$Sr$_{x}$MnO$_{3}$ with x$\approx$0.5|H. Ulbrich,F. Krüger,A. A. Nugroho,D. Lamago,Y. Sidis,M. Braden###
(1069546, 1069550)
Furthermore, magnetic excitations in the ferromagnetic metallic state ofNd1-xSrx<missing VAR>MnO3 with x<missing VAR>0.49 and x<missing VAR>0.50 exhibit nearly the samemagnon dispersion which can be described with a Heisenberg model includingnearest-neighbor interactions.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

MnO3
###Spin-wave excitations in the ferromagnetic-metallic and in the charge, orbital and spin ordered states in Nd$_{1-x}$Sr$_{x}$MnO$_{3}$ with x$\approx$0.5|H. Ulbrich,F. Krüger,A. A. Nugroho,D. Lamago,Y. Sidis,M. Braden###
(1069552, 1069554)
Furthermore, magnetic excitations in the ferromagnetic metallic state ofNd1-xSrx<missing VAR>MnO3 with x<missing VAR>0.49 and x<missing VAR>0.50 exhibit nearly the samemagnon dispersion which can be described with a Heisenberg model includingnearest-neighbor interactions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Te3
###Molecular Beam Epitaxial Growth of Bi2Te3 and Sb2Te3 Topological Insulators on GaAs (111) Substrates: A Potential Route to Fabricate Topological Insulator p-n Junction|Zhaoquan Zeng,Timothy A. Morgan,Dongsheng Fan,Chen Li,Yusuke Hirono,Xian Hu,Yanfei Zhao,Joon Sue Lee,Zhiming M. Wang,Jian Wang,Shuiqing Yu,Michael E. Hawkridge,Mourad Benamara,Gregory J. Salamo###
(1069623, 1069626)
Molecular Beam Epitaxial Growth of Bi2Te3 and Sb2Te3 Topological Insulators on GaAs (111) Substrates A Potential Route to Fabricate Topological Insulator p-n Junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sb2Te3
###Molecular Beam Epitaxial Growth of Bi2Te3 and Sb2Te3 Topological Insulators on GaAs (111) Substrates: A Potential Route to Fabricate Topological Insulator p-n Junction|Zhaoquan Zeng,Timothy A. Morgan,Dongsheng Fan,Chen Li,Yusuke Hirono,Xian Hu,Yanfei Zhao,Joon Sue Lee,Zhiming M. Wang,Jian Wang,Shuiqing Yu,Michael E. Hawkridge,Mourad Benamara,Gregory J. Salamo###
(1069630, 1069633)
Molecular Beam Epitaxial Growth of Bi2Te3 and Sb2Te3 Topological Insulators on GaAs (111) Substrates A Potential Route to Fabricate Topological Insulator p-n Junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Molecular Beam Epitaxial Growth of Bi2Te3 and Sb2Te3 Topological Insulators on GaAs (111) Substrates: A Potential Route to Fabricate Topological Insulator p-n Junction|Zhaoquan Zeng,Timothy A. Morgan,Dongsheng Fan,Chen Li,Yusuke Hirono,Xian Hu,Yanfei Zhao,Joon Sue Lee,Zhiming M. Wang,Jian Wang,Shuiqing Yu,Michael E. Hawkridge,Mourad Benamara,Gregory J. Salamo###
(1069641, 1069642)
Molecular Beam Epitaxial Growth of Bi2Te3 and Sb2Te3 Topological Insulators on GaAs (111) Substrates A Potential Route to Fabricate Topological Insulator p-n Junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Te3
###Molecular Beam Epitaxial Growth of Bi2Te3 and Sb2Te3 Topological Insulators on GaAs (111) Substrates: A Potential Route to Fabricate Topological Insulator p-n Junction|Zhaoquan Zeng,Timothy A. Morgan,Dongsheng Fan,Chen Li,Yusuke Hirono,Xian Hu,Yanfei Zhao,Joon Sue Lee,Zhiming M. Wang,Jian Wang,Shuiqing Yu,Michael E. Hawkridge,Mourad Benamara,Gregory J. Salamo###
(1069675, 1069678)
 High quality Bi2Te3 and Sb2Te3 topological insulators films were epitaxiallygrown on GaAs (111) substrate using solid source molecular beam epitaxy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sb2Te3
###Molecular Beam Epitaxial Growth of Bi2Te3 and Sb2Te3 Topological Insulators on GaAs (111) Substrates: A Potential Route to Fabricate Topological Insulator p-n Junction|Zhaoquan Zeng,Timothy A. Morgan,Dongsheng Fan,Chen Li,Yusuke Hirono,Xian Hu,Yanfei Zhao,Joon Sue Lee,Zhiming M. Wang,Jian Wang,Shuiqing Yu,Michael E. Hawkridge,Mourad Benamara,Gregory J. Salamo###
(1069682, 1069685)
 High quality Bi2Te3 and Sb2Te3 topological insulators films were epitaxiallygrown on GaAs (111) substrate using solid source molecular beam epitaxy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Molecular Beam Epitaxial Growth of Bi2Te3 and Sb2Te3 Topological Insulators on GaAs (111) Substrates: A Potential Route to Fabricate Topological Insulator p-n Junction|Zhaoquan Zeng,Timothy A. Morgan,Dongsheng Fan,Chen Li,Yusuke Hirono,Xian Hu,Yanfei Zhao,Joon Sue Lee,Zhiming M. Wang,Jian Wang,Shuiqing Yu,Michael E. Hawkridge,Mourad Benamara,Gregory J. Salamo###
(1069702, 1069703)
 High quality Bi2Te3 and Sb2Te3 topological insulators films were epitaxiallygrown on GaAs (111) substrate using solid source molecular beam epitaxy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Molecular Beam Epitaxial Growth of Bi2Te3 and Sb2Te3 Topological Insulators on GaAs (111) Substrates: A Potential Route to Fabricate Topological Insulator p-n Junction|Zhaoquan Zeng,Timothy A. Morgan,Dongsheng Fan,Chen Li,Yusuke Hirono,Xian Hu,Yanfei Zhao,Joon Sue Lee,Zhiming M. Wang,Jian Wang,Shuiqing Yu,Michael E. Hawkridge,Mourad Benamara,Gregory J. Salamo###
(1069745, 1069746)
 Theirgrowth and behavior on both vicinal and non-vicinal GaAs (111) substrates wereinvestigated by reflection high-energy electron diffraction, atomic forcemicroscopy, x<missing VAR>-ray diffraction, and high resolution transmission electronmicroscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Molecular Beam Epitaxial Growth of Bi2Te3 and Sb2Te3 Topological Insulators on GaAs (111) Substrates: A Potential Route to Fabricate Topological Insulator p-n Junction|Zhaoquan Zeng,Timothy A. Morgan,Dongsheng Fan,Chen Li,Yusuke Hirono,Xian Hu,Yanfei Zhao,Joon Sue Lee,Zhiming M. Wang,Jian Wang,Shuiqing Yu,Michael E. Hawkridge,Mourad Benamara,Gregory J. Salamo###
(1069813, 1069814)
 It is found that non-vicinal GaAs (111) substrate is better than avicinal substrate to provide high quality Bi2Te3 and Sb2Te3 films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Te3
###Molecular Beam Epitaxial Growth of Bi2Te3 and Sb2Te3 Topological Insulators on GaAs (111) Substrates: A Potential Route to Fabricate Topological Insulator p-n Junction|Zhaoquan Zeng,Timothy A. Morgan,Dongsheng Fan,Chen Li,Yusuke Hirono,Xian Hu,Yanfei Zhao,Joon Sue Lee,Zhiming M. Wang,Jian Wang,Shuiqing Yu,Michael E. Hawkridge,Mourad Benamara,Gregory J. Salamo###
(1069843, 1069846)
 It is found that non-vicinal GaAs (111) substrate is better than avicinal substrate to provide high quality Bi2Te3 and Sb2Te3 films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sb2Te3
###Molecular Beam Epitaxial Growth of Bi2Te3 and Sb2Te3 Topological Insulators on GaAs (111) Substrates: A Potential Route to Fabricate Topological Insulator p-n Junction|Zhaoquan Zeng,Timothy A. Morgan,Dongsheng Fan,Chen Li,Yusuke Hirono,Xian Hu,Yanfei Zhao,Joon Sue Lee,Zhiming M. Wang,Jian Wang,Shuiqing Yu,Michael E. Hawkridge,Mourad Benamara,Gregory J. Salamo###
(1069850, 1069853)
 It is found that non-vicinal GaAs (111) substrate is better than avicinal substrate to provide high quality Bi2Te3 and Sb2Te3 films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sb2Te3
###Molecular Beam Epitaxial Growth of Bi2Te3 and Sb2Te3 Topological Insulators on GaAs (111) Substrates: A Potential Route to Fabricate Topological Insulator p-n Junction|Zhaoquan Zeng,Timothy A. Morgan,Dongsheng Fan,Chen Li,Yusuke Hirono,Xian Hu,Yanfei Zhao,Joon Sue Lee,Zhiming M. Wang,Jian Wang,Shuiqing Yu,Michael E. Hawkridge,Mourad Benamara,Gregory J. Salamo###
(1069875, 1069878)
 Hall andmagnetoresistance measurements indicate that p<missing VAR> type Sb2Te3 and n<missing VAR> type Bi2Te3topological insulator films can be directly grown on a GaAs (111) substrate,which may pave a way to fabricate topological insulator p-n junction on thesame substrate, compatible with the fabrication process of presentsemiconductor optoelectronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Te3
###Molecular Beam Epitaxial Growth of Bi2Te3 and Sb2Te3 Topological Insulators on GaAs (111) Substrates: A Potential Route to Fabricate Topological Insulator p-n Junction|Zhaoquan Zeng,Timothy A. Morgan,Dongsheng Fan,Chen Li,Yusuke Hirono,Xian Hu,Yanfei Zhao,Joon Sue Lee,Zhiming M. Wang,Jian Wang,Shuiqing Yu,Michael E. Hawkridge,Mourad Benamara,Gregory J. Salamo###
(1069886, 1069889)
 Hall andmagnetoresistance measurements indicate that p<missing VAR> type Sb2Te3 and n<missing VAR> type Bi2Te3topological insulator films can be directly grown on a GaAs (111) substrate,which may pave a way to fabricate topological insulator p-n junction on thesame substrate, compatible with the fabrication process of presentsemiconductor optoelectronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Molecular Beam Epitaxial Growth of Bi2Te3 and Sb2Te3 Topological Insulators on GaAs (111) Substrates: A Potential Route to Fabricate Topological Insulator p-n Junction|Zhaoquan Zeng,Timothy A. Morgan,Dongsheng Fan,Chen Li,Yusuke Hirono,Xian Hu,Yanfei Zhao,Joon Sue Lee,Zhiming M. Wang,Jian Wang,Shuiqing Yu,Michael E. Hawkridge,Mourad Benamara,Gregory J. Salamo###
(1069910, 1069911)
 Hall andmagnetoresistance measurements indicate that p<missing VAR> type Sb2Te3 and n<missing VAR> type Bi2Te3topological insulator films can be directly grown on a GaAs (111) substrate,which may pave a way to fabricate topological insulator p-n junction on thesame substrate, compatible with the fabrication process of presentsemiconductor optoelectronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Quantum Hall Effect in Hydrogenated Graphene|J. Guillemette,S. S. Sabri,B. Wu,K. Bennaceur,P. E. Gaskell,M. Savard,P. L. Lévesque,F. Mahvash,A. Guermoune,M. Siaj,R. Martel,T. Szkopek,G. Gervais###
(1070053, 1070053)
 The quantum Hall effect is observed in a two-dimensional electron gas formedin millimeter-scale hydrogenated graphene, with a mobility less than 10mathrmcm2/Vcdot s<missing VAR> and corresponding Ioffe-Regel disorder parameter(k<missing VAR>Flambda)-1gg1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 0.5, '%', 2],[131.0, 45, 'T', 2]

F
###Quantum Hall Effect in Hydrogenated Graphene|J. Guillemette,S. S. Sabri,B. Wu,K. Bennaceur,P. E. Gaskell,M. Savard,P. L. Lévesque,F. Mahvash,A. Guermoune,M. Siaj,R. Martel,T. Szkopek,G. Gervais###
(1070073, 1070073)
 The quantum Hall effect is observed in a two-dimensional electron gas formedin millimeter-scale hydrogenated graphene, with a mobility less than 10mathrmcm2/Vcdot s<missing VAR> and corresponding Ioffe-Regel disorder parameter(k<missing VAR>Flambda)-1gg1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 0.5, '%', 2],[111.0, 45, 'T', 2]

In
###Quantum Hall Effect in Hydrogenated Graphene|J. Guillemette,S. S. Sabri,B. Wu,K. Bennaceur,P. E. Gaskell,M. Savard,P. L. Lévesque,F. Mahvash,A. Guermoune,M. Siaj,R. Martel,T. Szkopek,G. Gervais###
(1070082, 1070082)
 In zero magnetic field and low temperatures, thehydrogenated graphene is insulating with a two-point resistance of order of250 h/e2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 0.5, '%', 1],[102.0, 45, 'T', 1]

SmNiO3
###Hall effect measurements on epitaxial SmNiO3 thin films and implications for antiferromagnetism|Sieu D. Ha,R. Jaramillo,D. M. Silevitch,Frank Schoofs,Kian Kerman,John D. Baniecki,Shriram Ramanathan###
(1070284, 1070287)
Hall effect measurements on epitaxial SmNiO3 thin films and implications for antiferromagnetism.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 2, ',', 1],[60.0, 0, ',', 1]

O3
###Hall effect measurements on epitaxial SmNiO3 thin films and implications for antiferromagnetism|Sieu D. Ha,R. Jaramillo,D. M. Silevitch,Frank Schoofs,Kian Kerman,John D. Baniecki,Shriram Ramanathan###
(1070313, 1070314)
 The rare-earth nickelates (R<missing VAR>NiO3) exhibit interesting phenomena such asunusual antiferromagnetic order at wavevector q<missing VAR>  (1/2, 0, 1/2) and a tunableinsulator-metal transition that are subjects of active research.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 2, ',', 0],[33.0, 0, ',', 0]

H
###Hall effect measurements on epitaxial SmNiO3 thin films and implications for antiferromagnetism|Sieu D. Ha,R. Jaramillo,D. M. Silevitch,Frank Schoofs,Kian Kerman,John D. Baniecki,Shriram Ramanathan###
(1070420, 1070420)
 Here wepresent temperature-dependent transport measurements of the resistivity,magnetoresistance, Seebeck coefficient, and Hall coefficient (R<missing VAR>H) of epitaxialSmNiO3 thin films with varying oxygen stoichiometry.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 2, ',', 1],[73.0, 0, ',', 1]

SmNiO3
###Hall effect measurements on epitaxial SmNiO3 thin films and implications for antiferromagnetism|Sieu D. Ha,R. Jaramillo,D. M. Silevitch,Frank Schoofs,Kian Kerman,John D. Baniecki,Shriram Ramanathan###
(1070428, 1070431)
 Here wepresent temperature-dependent transport measurements of the resistivity,magnetoresistance, Seebeck coefficient, and Hall coefficient (R<missing VAR>H) of epitaxialSmNiO3 thin films with varying oxygen stoichiometry.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 2, ',', 1],[81.0, 0, ',', 1]

At
###Hall effect measurements on epitaxial SmNiO3 thin films and implications for antiferromagnetism|Sieu D. Ha,R. Jaramillo,D. M. Silevitch,Frank Schoofs,Kian Kerman,John D. Baniecki,Shriram Ramanathan###
(1070502, 1070502)
 At lowtemperature the Neel transition induces a crossover in the sign of R<missing VAR>H toelectron-like, similar to the effects of spin density wave formation inmetallic systems but here arising in an insulating phase 200 K below theinsulator-metal transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 2, ',', 3],[155.0, 0, ',', 3]

N
###Hall effect measurements on epitaxial SmNiO3 thin films and implications for antiferromagnetism|Sieu D. Ha,R. Jaramillo,D. M. Silevitch,Frank Schoofs,Kian Kerman,John D. Baniecki,Shriram Ramanathan###
(1070511, 1070511)
 At lowtemperature the Neel transition induces a crossover in the sign of R<missing VAR>H toelectron-like, similar to the effects of spin density wave formation inmetallic systems but here arising in an insulating phase 200 K below theinsulator-metal transition.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 2, ',', 3],[164.0, 0, ',', 3]

H
###Hall effect measurements on epitaxial SmNiO3 thin films and implications for antiferromagnetism|Sieu D. Ha,R. Jaramillo,D. M. Silevitch,Frank Schoofs,Kian Kerman,John D. Baniecki,Shriram Ramanathan###
(1070531, 1070531)
 At lowtemperature the Neel transition induces a crossover in the sign of R<missing VAR>H toelectron-like, similar to the effects of spin density wave formation inmetallic systems but here arising in an insulating phase 200 K below theinsulator-metal transition.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[187.0, 2, ',', 3],[184.0, 0, ',', 3]

K
###Hall effect measurements on epitaxial SmNiO3 thin films and implications for antiferromagnetism|Sieu D. Ha,R. Jaramillo,D. M. Silevitch,Frank Schoofs,Kian Kerman,John D. Baniecki,Shriram Ramanathan###
(1070582, 1070582)
 At lowtemperature the Neel transition induces a crossover in the sign of R<missing VAR>H toelectron-like, similar to the effects of spin density wave formation inmetallic systems but here arising in an insulating phase 200 K below theinsulator-metal transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[238.0, 2, ',', 3],[235.0, 0, ',', 3]

NiO3
###Hall effect measurements on epitaxial SmNiO3 thin films and implications for antiferromagnetism|Sieu D. Ha,R. Jaramillo,D. M. Silevitch,Frank Schoofs,Kian Kerman,John D. Baniecki,Shriram Ramanathan###
(1070636, 1070638)
 We propose that antiferromagnetism can bestabilized by bandstructure even in insulating phases of correlated oxides,such as R<missing VAR>NiO3, that fall between the limits of strong and weak electroncorrelation.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[292.0, 2, ',', 4],[289.0, 0, ',', 4]

S
###Spin-Hall Magnetoresistance in Platinum on Yttrium Iron Garnet: Dependence on platinum thickness and in-plane/out-of-plane magnetization|N. Vlietstra,J. Shan,V. Castel,J. Ben Youssef,B. J. van Wees###
(1070727, 1070727)
 The occurrence of Spin-Hall Magnetoresistance (SMR) in platinum (Pt) on topof yttrium iron garnet (YIG) has been investigated, for both in-plane andout-of-plane applied magnetic fields and for different Pt thicknesses [3, 4, 8and 35nm].
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 3, ',', 0],[76.0, 4, ',', 0],[83.0, 35, 'nm', 0]

(Pt)
###Spin-Hall Magnetoresistance in Platinum on Yttrium Iron Garnet: Dependence on platinum thickness and in-plane/out-of-plane magnetization|N. Vlietstra,J. Shan,V. Castel,J. Ben Youssef,B. J. van Wees###
(1070736, 1070738)
 The occurrence of Spin-Hall Magnetoresistance (SMR) in platinum (Pt) on topof yttrium iron garnet (YIG) has been investigated, for both in-plane andout-of-plane applied magnetic fields and for different Pt thicknesses [3, 4, 8and 35nm].
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 3, ',', 0],[65.0, 4, ',', 0],[72.0, 35, 'nm', 0]

YI
###Spin-Hall Magnetoresistance in Platinum on Yttrium Iron Garnet: Dependence on platinum thickness and in-plane/out-of-plane magnetization|N. Vlietstra,J. Shan,V. Castel,J. Ben Youssef,B. J. van Wees###
(1070754, 1070755)
 The occurrence of Spin-Hall Magnetoresistance (SMR) in platinum (Pt) on topof yttrium iron garnet (YIG) has been investigated, for both in-plane andout-of-plane applied magnetic fields and for different Pt thicknesses [3, 4, 8and 35nm].
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 3, ',', 0],[48.0, 4, ',', 0],[55.0, 35, 'nm', 0]

Pt
###Spin-Hall Magnetoresistance in Platinum on Yttrium Iron Garnet: Dependence on platinum thickness and in-plane/out-of-plane magnetization|N. Vlietstra,J. Shan,V. Castel,J. Ben Youssef,B. J. van Wees###
(1070795, 1070795)
 The occurrence of Spin-Hall Magnetoresistance (SMR) in platinum (Pt) on topof yttrium iron garnet (YIG) has been investigated, for both in-plane andout-of-plane applied magnetic fields and for different Pt thicknesses [3, 4, 8and 35nm].
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 3, ',', 0],[8.0, 4, ',', 0],[15.0, 35, 'nm', 0]

S
###Spin-Hall Magnetoresistance in Platinum on Yttrium Iron Garnet: Dependence on platinum thickness and in-plane/out-of-plane magnetization|N. Vlietstra,J. Shan,V. Castel,J. Ben Youssef,B. J. van Wees###
(1070824, 1070824)
 Our experiments show that the SMR signal directly depends on thein-plane and out-of-plane magnetization directions of the YIG<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 3, ',', 1],[21.0, 4, ',', 1],[14.0, 35, 'nm', 1]

YI
###Spin-Hall Magnetoresistance in Platinum on Yttrium Iron Garnet: Dependence on platinum thickness and in-plane/out-of-plane magnetization|N. Vlietstra,J. Shan,V. Castel,J. Ben Youssef,B. J. van Wees###
(1070859, 1070860)
 Our experiments show that the SMR signal directly depends on thein-plane and out-of-plane magnetization directions of the YIG<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 3, ',', 1],[56.0, 4, ',', 1],[49.0, 35, 'nm', 1]

S
###Spin-Hall Magnetoresistance in Platinum on Yttrium Iron Garnet: Dependence on platinum thickness and in-plane/out-of-plane magnetization|N. Vlietstra,J. Shan,V. Castel,J. Ben Youssef,B. J. van Wees###
(1070880, 1070880)
 This confirmsthe theoretical description, where the SMR occurs due to the interplay ofspin-orbit interaction in the Pt and spin-mixing at the YIG<missing VAR>/Pt interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 3, ',', 2],[77.0, 4, ',', 2],[70.0, 35, 'nm', 2]

Pt
###Spin-Hall Magnetoresistance in Platinum on Yttrium Iron Garnet: Dependence on platinum thickness and in-plane/out-of-plane magnetization|N. Vlietstra,J. Shan,V. Castel,J. Ben Youssef,B. J. van Wees###
(1070907, 1070907)
 This confirmsthe theoretical description, where the SMR occurs due to the interplay ofspin-orbit interaction in the Pt and spin-mixing at the YIG<missing VAR>/Pt interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 3, ',', 2],[104.0, 4, ',', 2],[97.0, 35, 'nm', 2]

YI
###Spin-Hall Magnetoresistance in Platinum on Yttrium Iron Garnet: Dependence on platinum thickness and in-plane/out-of-plane magnetization|N. Vlietstra,J. Shan,V. Castel,J. Ben Youssef,B. J. van Wees###
(1070919, 1070920)
 This confirmsthe theoretical description, where the SMR occurs due to the interplay ofspin-orbit interaction in the Pt and spin-mixing at the YIG<missing VAR>/Pt interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 3, ',', 2],[116.0, 4, ',', 2],[109.0, 35, 'nm', 2]

Pt
###Spin-Hall Magnetoresistance in Platinum on Yttrium Iron Garnet: Dependence on platinum thickness and in-plane/out-of-plane magnetization|N. Vlietstra,J. Shan,V. Castel,J. Ben Youssef,B. J. van Wees###
(1070923, 1070923)
 This confirmsthe theoretical description, where the SMR occurs due to the interplay ofspin-orbit interaction in the Pt and spin-mixing at the YIG<missing VAR>/Pt interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 3, ',', 2],[120.0, 4, ',', 2],[113.0, 35, 'nm', 2]

S
###Spin-Hall Magnetoresistance in Platinum on Yttrium Iron Garnet: Dependence on platinum thickness and in-plane/out-of-plane magnetization|N. Vlietstra,J. Shan,V. Castel,J. Ben Youssef,B. J. van Wees###
(1070940, 1070940)
Additionally, the sensitivity of the SMR and spin pumping signals on the YIG<missing VAR>/Ptinterface conditions is shown by comparing two different deposition techniques(e<missing VAR>-beam evaporation and dc sputtering).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 3, ',', 3],[137.0, 4, ',', 3],[130.0, 35, 'nm', 3]

YI
###Spin-Hall Magnetoresistance in Platinum on Yttrium Iron Garnet: Dependence on platinum thickness and in-plane/out-of-plane magnetization|N. Vlietstra,J. Shan,V. Castel,J. Ben Youssef,B. J. van Wees###
(1070956, 1070957)
Additionally, the sensitivity of the SMR and spin pumping signals on the YIG<missing VAR>/Ptinterface conditions is shown by comparing two different deposition techniques(e<missing VAR>-beam evaporation and dc sputtering).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 3, ',', 3],[153.0, 4, ',', 3],[146.0, 35, 'nm', 3]

Pt
###Spin-Hall Magnetoresistance in Platinum on Yttrium Iron Garnet: Dependence on platinum thickness and in-plane/out-of-plane magnetization|N. Vlietstra,J. Shan,V. Castel,J. Ben Youssef,B. J. van Wees###
(1070960, 1070960)
Additionally, the sensitivity of the SMR and spin pumping signals on the YIG<missing VAR>/Ptinterface conditions is shown by comparing two different deposition techniques(e<missing VAR>-beam evaporation and dc sputtering).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 3, ',', 3],[157.0, 4, ',', 3],[150.0, 35, 'nm', 3]

ISH
###Self-induced inverse spin Hall effect in permalloy at room temperature|Ayaka Tsukahara,Yuichiro Ando,Yuta Kitamura,Hiroyuki Emito,Eiji Shikoh,Michael P. Delmo,Teruya Shinjo,Masashi Shiraishi###
(1071039, 1071041)
 Inverse spin Hall effect (ISHE) allows the conversion of pure spin currentinto charge current in nonmagnetic materials (NM) due to spin-orbit interaction(SOI).
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Self-induced inverse spin Hall effect in permalloy at room temperature|Ayaka Tsukahara,Yuichiro Ando,Yuta Kitamura,Hiroyuki Emito,Eiji Shikoh,Michael P. Delmo,Teruya Shinjo,Masashi Shiraishi###
(1071073, 1071073)
 Inverse spin Hall effect (ISHE) allows the conversion of pure spin currentinto charge current in nonmagnetic materials (NM) due to spin-orbit interaction(SOI).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(SOI)
###Self-induced inverse spin Hall effect in permalloy at room temperature|Ayaka Tsukahara,Yuichiro Ando,Yuta Kitamura,Hiroyuki Emito,Eiji Shikoh,Michael P. Delmo,Teruya Shinjo,Masashi Shiraishi###
(1071088, 1071092)
 Inverse spin Hall effect (ISHE) allows the conversion of pure spin currentinto charge current in nonmagnetic materials (NM) due to spin-orbit interaction(SOI).
Featurization successful!
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Self-induced inverse spin Hall effect in permalloy at room temperature|Ayaka Tsukahara,Yuichiro Ando,Yuta Kitamura,Hiroyuki Emito,Eiji Shikoh,Michael P. Delmo,Teruya Shinjo,Masashi Shiraishi###
(1071095, 1071095)
 In ferromagnetic materials (FM), SOI is known to contribute to anomalousHall effect (AHE), anisotropic magnetoresistance (AMR), and otherspin-dependent transport phenomena.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Self-induced inverse spin Hall effect in permalloy at room temperature|Ayaka Tsukahara,Yuichiro Ando,Yuta Kitamura,Hiroyuki Emito,Eiji Shikoh,Michael P. Delmo,Teruya Shinjo,Masashi Shiraishi###
(1071102, 1071102)
 In ferromagnetic materials (FM), SOI is known to contribute to anomalousHall effect (AHE), anisotropic magnetoresistance (AMR), and otherspin-dependent transport phenomena.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SOI
###Self-induced inverse spin Hall effect in permalloy at room temperature|Ayaka Tsukahara,Yuichiro Ando,Yuta Kitamura,Hiroyuki Emito,Eiji Shikoh,Michael P. Delmo,Teruya Shinjo,Masashi Shiraishi###
(1071107, 1071109)
 In ferromagnetic materials (FM), SOI is known to contribute to anomalousHall effect (AHE), anisotropic magnetoresistance (AMR), and otherspin-dependent transport phenomena.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Self-induced inverse spin Hall effect in permalloy at room temperature|Ayaka Tsukahara,Yuichiro Ando,Yuta Kitamura,Hiroyuki Emito,Eiji Shikoh,Michael P. Delmo,Teruya Shinjo,Masashi Shiraishi###
(1071130, 1071130)
 In ferromagnetic materials (FM), SOI is known to contribute to anomalousHall effect (AHE), anisotropic magnetoresistance (AMR), and otherspin-dependent transport phenomena.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SOI
###Self-induced inverse spin Hall effect in permalloy at room temperature|Ayaka Tsukahara,Yuichiro Ando,Yuta Kitamura,Hiroyuki Emito,Eiji Shikoh,Michael P. Delmo,Teruya Shinjo,Masashi Shiraishi###
(1071163, 1071165)
 However, SOI in FM<missing VAR> has been ignored in ISHE<missing VAR>studies in spintronic devices, and the possibility of self-induced ISHE<missing VAR> in FM<missing VAR>has never been explored until now.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Self-induced inverse spin Hall effect in permalloy at room temperature|Ayaka Tsukahara,Yuichiro Ando,Yuta Kitamura,Hiroyuki Emito,Eiji Shikoh,Michael P. Delmo,Teruya Shinjo,Masashi Shiraishi###
(1071169, 1071169)
 However, SOI in FM<missing VAR> has been ignored in ISHE<missing VAR>studies in spintronic devices, and the possibility of self-induced ISHE<missing VAR> in FM<missing VAR>has never been explored until now.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ISH
###Self-induced inverse spin Hall effect in permalloy at room temperature|Ayaka Tsukahara,Yuichiro Ando,Yuta Kitamura,Hiroyuki Emito,Eiji Shikoh,Michael P. Delmo,Teruya Shinjo,Masashi Shiraishi###
(1071180, 1071182)
 However, SOI in FM<missing VAR> has been ignored in ISHE<missing VAR>studies in spintronic devices, and the possibility of self-induced ISHE<missing VAR> in FM<missing VAR>has never been explored until now.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ISH
###Self-induced inverse spin Hall effect in permalloy at room temperature|Ayaka Tsukahara,Yuichiro Ando,Yuta Kitamura,Hiroyuki Emito,Eiji Shikoh,Michael P. Delmo,Teruya Shinjo,Masashi Shiraishi###
(1071207, 1071209)
 However, SOI in FM<missing VAR> has been ignored in ISHE<missing VAR>studies in spintronic devices, and the possibility of self-induced ISHE<missing VAR> in FM<missing VAR>has never been explored until now.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Self-induced inverse spin Hall effect in permalloy at room temperature|Ayaka Tsukahara,Yuichiro Ando,Yuta Kitamura,Hiroyuki Emito,Eiji Shikoh,Michael P. Delmo,Teruya Shinjo,Masashi Shiraishi###
(1071214, 1071214)
 However, SOI in FM<missing VAR> has been ignored in ISHE<missing VAR>studies in spintronic devices, and the possibility of self-induced ISHE<missing VAR> in FM<missing VAR>has never been explored until now.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Self-induced inverse spin Hall effect in permalloy at room temperature|Ayaka Tsukahara,Yuichiro Ando,Yuta Kitamura,Hiroyuki Emito,Eiji Shikoh,Michael P. Delmo,Teruya Shinjo,Masashi Shiraishi###
(1071231, 1071231)
 In this paper, we demonstrate theexperimental verification of ISHE<missing VAR> in FM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ISH
###Self-induced inverse spin Hall effect in permalloy at room temperature|Ayaka Tsukahara,Yuichiro Ando,Yuta Kitamura,Hiroyuki Emito,Eiji Shikoh,Michael P. Delmo,Teruya Shinjo,Masashi Shiraishi###
(1071251, 1071253)
 In this paper, we demonstrate theexperimental verification of ISHE<missing VAR> in FM<missing VAR>.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Self-induced inverse spin Hall effect in permalloy at room temperature|Ayaka Tsukahara,Yuichiro Ando,Yuta Kitamura,Hiroyuki Emito,Eiji Shikoh,Michael P. Delmo,Teruya Shinjo,Masashi Shiraishi###
(1071258, 1071258)
 In this paper, we demonstrate theexperimental verification of ISHE<missing VAR> in FM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Self-induced inverse spin Hall effect in permalloy at room temperature|Ayaka Tsukahara,Yuichiro Ando,Yuta Kitamura,Hiroyuki Emito,Eiji Shikoh,Michael P. Delmo,Teruya Shinjo,Masashi Shiraishi###
(1071305, 1071305)
 We found that the spin-pumping-inducedspin current in permalloy (Py) film generates a transverse electromotive force(EMF) in the film itself, which results from the coupling of spin current andSOI in Py.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SOI
###Self-induced inverse spin Hall effect in permalloy at room temperature|Ayaka Tsukahara,Yuichiro Ando,Yuta Kitamura,Hiroyuki Emito,Eiji Shikoh,Michael P. Delmo,Teruya Shinjo,Masashi Shiraishi###
(1071336, 1071338)
 We found that the spin-pumping-inducedspin current in permalloy (Py) film generates a transverse electromotive force(EMF) in the film itself, which results from the coupling of spin current andSOI in Py.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Self-induced inverse spin Hall effect in permalloy at room temperature|Ayaka Tsukahara,Yuichiro Ando,Yuta Kitamura,Hiroyuki Emito,Eiji Shikoh,Michael P. Delmo,Teruya Shinjo,Masashi Shiraishi###
(1071382, 1071382)
 The control experiments ruled out spin rectification effect andanomalous Nernst effect as the origin of the EMF.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nd2Ir2O7
###Giant Magnetoresistance Effect in the Metal-Insulator Transition of Pyrochlore Oxide Nd2Ir2O7|Kazuyuki Matsuhira,Masashi Tokunaga,Makoto Wakeshima,Yukio Hinatsu,Seishi Takagi###
(1071415, 1071420)
Giant Magnetoresistance Effect in the Metal-Insulator Transition of Pyrochlore Oxide Nd2Ir2O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6363636363636364,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 3000, '%', 3],[139.0, 1, 'K', 3],[148.0, 9, 'T', 3],[205.0, 56, 'T', 4],[255.0, 127, 'K', 5]

Nd2Ir2O7
###Giant Magnetoresistance Effect in the Metal-Insulator Transition of Pyrochlore Oxide Nd2Ir2O7|Kazuyuki Matsuhira,Masashi Tokunaga,Makoto Wakeshima,Yukio Hinatsu,Seishi Takagi###
(1071447, 1071452)
 We investigated the magnetoresistance (MR) effect of the pyrochlore oxideNd2Ir2O7, which shows a metal-insulator transition at TMI 33 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6363636363636364,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 3000, '%', 2],[107.0, 1, 'K', 2],[116.0, 9, 'T', 2],[173.0, 56, 'T', 3],[223.0, 127, 'K', 4]

I
###Giant Magnetoresistance Effect in the Metal-Insulator Transition of Pyrochlore Oxide Nd2Ir2O7|Kazuyuki Matsuhira,Masashi Tokunaga,Makoto Wakeshima,Yukio Hinatsu,Seishi Takagi###
(1071471, 1071471)
 We investigated the magnetoresistance (MR) effect of the pyrochlore oxideNd2Ir2O7, which shows a metal-insulator transition at TMI 33 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 3000, '%', 2],[88.0, 1, 'K', 2],[97.0, 9, 'T', 2],[154.0, 56, 'T', 3],[204.0, 127, 'K', 4]

K
###Giant Magnetoresistance Effect in the Metal-Insulator Transition of Pyrochlore Oxide Nd2Ir2O7|Kazuyuki Matsuhira,Masashi Tokunaga,Makoto Wakeshima,Yukio Hinatsu,Seishi Takagi###
(1071475, 1071475)
 We investigated the magnetoresistance (MR) effect of the pyrochlore oxideNd2Ir2O7, which shows a metal-insulator transition at TMI 33 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 3000, '%', 2],[84.0, 1, 'K', 2],[93.0, 9, 'T', 2],[150.0, 56, 'T', 3],[200.0, 127, 'K', 4]

I
###Giant Magnetoresistance Effect in the Metal-Insulator Transition of Pyrochlore Oxide Nd2Ir2O7|Kazuyuki Matsuhira,Masashi Tokunaga,Makoto Wakeshima,Yukio Hinatsu,Seishi Takagi###
(1071506, 1071506)
 A smallpositive MR effect was observed in the metallic state above TMI, while a largenegative MR effect was observed in the insulating state below TMI .
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 3000, '%', 1],[53.0, 1, 'K', 1],[62.0, 9, 'T', 1],[119.0, 56, 'T', 2],[169.0, 127, 'K', 3]

I
###Giant Magnetoresistance Effect in the Metal-Insulator Transition of Pyrochlore Oxide Nd2Ir2O7|Kazuyuki Matsuhira,Masashi Tokunaga,Makoto Wakeshima,Yukio Hinatsu,Seishi Takagi###
(1071539, 1071539)
 A smallpositive MR effect was observed in the metallic state above TMI, while a largenegative MR effect was observed in the insulating state below TMI .
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 3000, '%', 1],[20.0, 1, 'K', 1],[29.0, 9, 'T', 1],[86.0, 56, 'T', 2],[136.0, 127, 'K', 3]

As
###Giant Magnetoresistance Effect in the Metal-Insulator Transition of Pyrochlore Oxide Nd2Ir2O7|Kazuyuki Matsuhira,Masashi Tokunaga,Makoto Wakeshima,Yukio Hinatsu,Seishi Takagi###
(1071571, 1071571)
 As a result, we confirmedthe crossover from the insulating state to a state with a small or partial bandgap in a field up to 56 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 3000, '%', 1],[12.0, 1, 'K', 1],[3.0, 9, 'T', 1],[54.0, 56, 'T', 0],[104.0, 127, 'K', 1]

Eu2Ir2O7
###Giant Magnetoresistance Effect in the Metal-Insulator Transition of Pyrochlore Oxide Nd2Ir2O7|Kazuyuki Matsuhira,Masashi Tokunaga,Makoto Wakeshima,Yukio Hinatsu,Seishi Takagi###
(1071642, 1071647)
 Furthermore, from the MR effect in Eu2Ir2O7 (TMI 120 K) and Gd2Ir2O7 (TMI  127 K), we revealed that the largenegative MR effect of the pyrochlore iridate Ln2Ir2O7 depends on the magnetismof the lanthanide Ln3 ion.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6363636363636364,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 3000, '%', 2],[83.0, 1, 'K', 2],[74.0, 9, 'T', 2],[17.0, 56, 'T', 1],[28.0, 127, 'K', 0]

I
###Giant Magnetoresistance Effect in the Metal-Insulator Transition of Pyrochlore Oxide Nd2Ir2O7|Kazuyuki Matsuhira,Masashi Tokunaga,Makoto Wakeshima,Yukio Hinatsu,Seishi Takagi###
(1071652, 1071652)
 Furthermore, from the MR effect in Eu2Ir2O7 (TMI 120 K) and Gd2Ir2O7 (TMI  127 K), we revealed that the largenegative MR effect of the pyrochlore iridate Ln2Ir2O7 depends on the magnetismof the lanthanide Ln3 ion.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 3000, '%', 2],[93.0, 1, 'K', 2],[84.0, 9, 'T', 2],[27.0, 56, 'T', 1],[23.0, 127, 'K', 0]

K
###Giant Magnetoresistance Effect in the Metal-Insulator Transition of Pyrochlore Oxide Nd2Ir2O7|Kazuyuki Matsuhira,Masashi Tokunaga,Makoto Wakeshima,Yukio Hinatsu,Seishi Takagi###
(1071658, 1071658)
 Furthermore, from the MR effect in Eu2Ir2O7 (TMI 120 K) and Gd2Ir2O7 (TMI  127 K), we revealed that the largenegative MR effect of the pyrochlore iridate Ln2Ir2O7 depends on the magnetismof the lanthanide Ln3 ion.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 3000, '%', 2],[99.0, 1, 'K', 2],[90.0, 9, 'T', 2],[33.0, 56, 'T', 1],[17.0, 127, 'K', 0]

Gd2Ir2O7
###Giant Magnetoresistance Effect in the Metal-Insulator Transition of Pyrochlore Oxide Nd2Ir2O7|Kazuyuki Matsuhira,Masashi Tokunaga,Makoto Wakeshima,Yukio Hinatsu,Seishi Takagi###
(1071663, 1071668)
 Furthermore, from the MR effect in Eu2Ir2O7 (TMI 120 K) and Gd2Ir2O7 (TMI  127 K), we revealed that the largenegative MR effect of the pyrochlore iridate Ln2Ir2O7 depends on the magnetismof the lanthanide Ln3 ion.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6363636363636364,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 3000, '%', 2],[104.0, 1, 'K', 2],[95.0, 9, 'T', 2],[38.0, 56, 'T', 1],[7.0, 127, 'K', 0]

I
###Giant Magnetoresistance Effect in the Metal-Insulator Transition of Pyrochlore Oxide Nd2Ir2O7|Kazuyuki Matsuhira,Masashi Tokunaga,Makoto Wakeshima,Yukio Hinatsu,Seishi Takagi###
(1071673, 1071673)
 Furthermore, from the MR effect in Eu2Ir2O7 (TMI 120 K) and Gd2Ir2O7 (TMI  127 K), we revealed that the largenegative MR effect of the pyrochlore iridate Ln2Ir2O7 depends on the magnetismof the lanthanide Ln3 ion.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 3000, '%', 2],[114.0, 1, 'K', 2],[105.0, 9, 'T', 2],[48.0, 56, 'T', 1],[2.0, 127, 'K', 0]

Ir2O7
###Giant Magnetoresistance Effect in the Metal-Insulator Transition of Pyrochlore Oxide Nd2Ir2O7|Kazuyuki Matsuhira,Masashi Tokunaga,Makoto Wakeshima,Yukio Hinatsu,Seishi Takagi###
(1071707, 1071710)
 Furthermore, from the MR effect in Eu2Ir2O7 (TMI 120 K) and Gd2Ir2O7 (TMI  127 K), we revealed that the largenegative MR effect of the pyrochlore iridate Ln2Ir2O7 depends on the magnetismof the lanthanide Ln3 ion.
Featurization terminated normally.
0,0,0,0,0,0,0,0.7777777777777778,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 3000, '%', 2],[148.0, 1, 'K', 2],[139.0, 9, 'T', 2],[82.0, 56, 'T', 1],[32.0, 127, 'K', 0]

Sm0.53
###Low field anisotropic colossal magnetoresistance in $Sm_{0.53} Sr_{0.47} Mn O_3$ thin films|Manoj K. Srivastava,M. P. Singh,Amarjeet Kaur,F. S. Razavi,H. K. Singh###
(1071792, 1071793)
Low field anisotropic colossal magnetoresistance in Sm0.53 Sr0.47 Mn O3 thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 96, 'K', 3],[113.0, 91, 'K', 3],[266.0, 0, 'degree', 6],[278.0, 90, 'degree', 6],[331.0, 78, 'K', 7]

Sr0.47
###Low field anisotropic colossal magnetoresistance in $Sm_{0.53} Sr_{0.47} Mn O_3$ thin films|Manoj K. Srivastava,M. P. Singh,Amarjeet Kaur,F. S. Razavi,H. K. Singh###
(1071795, 1071796)
Low field anisotropic colossal magnetoresistance in Sm0.53 Sr0.47 Mn O3 thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 96, 'K', 3],[110.0, 91, 'K', 3],[263.0, 0, 'degree', 6],[275.0, 90, 'degree', 6],[328.0, 78, 'K', 7]

Mn
###Low field anisotropic colossal magnetoresistance in $Sm_{0.53} Sr_{0.47} Mn O_3$ thin films|Manoj K. Srivastava,M. P. Singh,Amarjeet Kaur,F. S. Razavi,H. K. Singh###
(1071798, 1071798)
Low field anisotropic colossal magnetoresistance in Sm0.53 Sr0.47 Mn O3 thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 96, 'K', 3],[108.0, 91, 'K', 3],[261.0, 0, 'degree', 6],[273.0, 90, 'degree', 6],[326.0, 78, 'K', 7]

O3
###Low field anisotropic colossal magnetoresistance in $Sm_{0.53} Sr_{0.47} Mn O_3$ thin films|Manoj K. Srivastava,M. P. Singh,Amarjeet Kaur,F. S. Razavi,H. K. Singh###
(1071800, 1071801)
Low field anisotropic colossal magnetoresistance in Sm0.53 Sr0.47 Mn O3 thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 96, 'K', 3],[105.0, 91, 'K', 3],[258.0, 0, 'degree', 6],[270.0, 90, 'degree', 6],[323.0, 78, 'K', 7]

SS
###Low field anisotropic colossal magnetoresistance in $Sm_{0.53} Sr_{0.47} Mn O_3$ thin films|Manoj K. Srivastava,M. P. Singh,Amarjeet Kaur,F. S. Razavi,H. K. Singh###
(1071808, 1071809)
 SSM<missing VAR>O5347 thin films (thicknesses 200 nm) were deposited by on-axis dcmagnetron sputtering on the single crystal L<missing VAR>SAT<missing VAR> (001) substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 96, 'K', 2],[97.0, 91, 'K', 2],[250.0, 0, 'degree', 5],[262.0, 90, 'degree', 5],[315.0, 78, 'K', 6]

O5347
###Low field anisotropic colossal magnetoresistance in $Sm_{0.53} Sr_{0.47} Mn O_3$ thin films|Manoj K. Srivastava,M. P. Singh,Amarjeet Kaur,F. S. Razavi,H. K. Singh###
(1071811, 1071812)
 SSM<missing VAR>O5347 thin films (thicknesses 200 nm) were deposited by on-axis dcmagnetron sputtering on the single crystal L<missing VAR>SAT<missing VAR> (001) substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 96, 'K', 2],[94.0, 91, 'K', 2],[247.0, 0, 'degree', 5],[259.0, 90, 'degree', 5],[312.0, 78, 'K', 6]

S
###Low field anisotropic colossal magnetoresistance in $Sm_{0.53} Sr_{0.47} Mn O_3$ thin films|Manoj K. Srivastava,M. P. Singh,Amarjeet Kaur,F. S. Razavi,H. K. Singh###
(1071852, 1071852)
 SSM<missing VAR>O5347 thin films (thicknesses 200 nm) were deposited by on-axis dcmagnetron sputtering on the single crystal L<missing VAR>SAT<missing VAR> (001) substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 96, 'K', 2],[54.0, 91, 'K', 2],[207.0, 0, 'degree', 5],[219.0, 90, 'degree', 5],[272.0, 78, 'K', 6]

SS
###Low field anisotropic colossal magnetoresistance in $Sm_{0.53} Sr_{0.47} Mn O_3$ thin films|Manoj K. Srivastava,M. P. Singh,Amarjeet Kaur,F. S. Razavi,H. K. Singh###
(1071980, 1071981)
 Themagnetotransport of the SSM<missing VAR>O films, which was measured as a function of angle(theta) between the magnetic field (H) and plane of the film, shows colossalanisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 96, 'K', 2],[74.0, 91, 'K', 2],[78.0, 0, 'degree', 1],[90.0, 90, 'degree', 1],[143.0, 78, 'K', 2]

O
###Low field anisotropic colossal magnetoresistance in $Sm_{0.53} Sr_{0.47} Mn O_3$ thin films|Manoj K. Srivastava,M. P. Singh,Amarjeet Kaur,F. S. Razavi,H. K. Singh###
(1071983, 1071983)
 Themagnetotransport of the SSM<missing VAR>O films, which was measured as a function of angle(theta) between the magnetic field (H) and plane of the film, shows colossalanisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 96, 'K', 2],[77.0, 91, 'K', 2],[76.0, 0, 'degree', 1],[88.0, 90, 'degree', 1],[141.0, 78, 'K', 2]

(H)
###Low field anisotropic colossal magnetoresistance in $Sm_{0.53} Sr_{0.47} Mn O_3$ thin films|Manoj K. Srivastava,M. P. Singh,Amarjeet Kaur,F. S. Razavi,H. K. Singh###
(1072017, 1072019)
 Themagnetotransport of the SSM<missing VAR>O films, which was measured as a function of angle(theta) between the magnetic field (H) and plane of the film, shows colossalanisotropy.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 96, 'K', 2],[111.0, 91, 'K', 2],[40.0, 0, 'degree', 1],[52.0, 90, 'degree', 1],[105.0, 78, 'K', 2]

H
###Low field anisotropic colossal magnetoresistance in $Sm_{0.53} Sr_{0.47} Mn O_3$ thin films|Manoj K. Srivastava,M. P. Singh,Amarjeet Kaur,F. S. Razavi,H. K. Singh###
(1072062, 1072062)
 Magnetoresistance (MR) decreases drastically as theta increasesfrom 0 degree (H//easy axis) to 90 degree (H//hard axis).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[159.0, 96, 'K', 3],[156.0, 91, 'K', 3],[3.0, 0, 'degree', 0],[9.0, 90, 'degree', 0],[62.0, 78, 'K', 1]

H
###Low field anisotropic colossal magnetoresistance in $Sm_{0.53} Sr_{0.47} Mn O_3$ thin films|Manoj K. Srivastava,M. P. Singh,Amarjeet Kaur,F. S. Razavi,H. K. Singh###
(1072074, 1072074)
 Magnetoresistance (MR) decreases drastically as theta increasesfrom 0 degree (H//easy axis) to 90 degree (H//hard axis).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[171.0, 96, 'K', 3],[168.0, 91, 'K', 3],[15.0, 0, 'degree', 0],[3.0, 90, 'degree', 0],[50.0, 78, 'K', 1]

H3.6
###Low field anisotropic colossal magnetoresistance in $Sm_{0.53} Sr_{0.47} Mn O_3$ thin films|Manoj K. Srivastava,M. P. Singh,Amarjeet Kaur,F. S. Razavi,H. K. Singh###
(1072117, 1072118)
 The out-of-planeanisotropic MR (AMR) is as high as 88 % at H3.6 k<missing VAR>Oe and 78 K.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[214.0, 96, 'K', 4],[211.0, 91, 'K', 4],[58.0, 0, 'degree', 1],[46.0, 90, 'degree', 1],[6.0, 78, 'K', 0]

In
###Data Storage: Review of Heusler Compounds|Zhaoqiang Bai,Lei Shen,Guchang Han,Yuan ping Feng###
(1072197, 1072197)
 In the recent decade, the family of Heusler compounds has attractedtremendous scientific and technological interest in the field of spintronics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Data Storage: Review of Heusler Compounds|Zhaoqiang Bai,Lei Shen,Guchang Han,Yuan ping Feng###
(1072321, 1072321)
 In this article, we provide a comprehensivereview on the applications of the Heusler family in magnetic data storage.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Data Storage: Review of Heusler Compounds|Zhaoqiang Bai,Lei Shen,Guchang Han,Yuan ping Feng###
(1072362, 1072362)
 Inaddition to their important roles in the performance improvement of thesedevices, we also try to point out the challenges as well as possible solutions,of the current Heusler-based devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CPP
###All-Heusler giant-magnetoresistance junctions with matched energy bands and Fermi surfaces|Zhaoqiang Bai,Yongqing Cai,Lei Shen,Guchang Han,Yuanping Feng###
(1072588, 1072590)
 We present an all-Heusler architecture which could be used as a rationaldesign scheme for achieving high spin-filtering efficiency in thecurrent-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co2MnSi/Ni2NiSi/Co2MnSi
###All-Heusler giant-magnetoresistance junctions with matched energy bands and Fermi surfaces|Zhaoqiang Bai,Yongqing Cai,Lei Shen,Guchang Han,Yuanping Feng###
(1072603, 1072616)
 ACo2MnSi/Ni2NiSi/Co2MnSi trilayer stack is chosen as the prototype of such anarchitecture, of which the electronic structure and magnetotransport propertiesare systematically investigated by first principles approaches.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

I
###All-Heusler giant-magnetoresistance junctions with matched energy bands and Fermi surfaces|Zhaoqiang Bai,Yongqing Cai,Lei Shen,Guchang Han,Yuanping Feng###
(1072829, 1072829)
 Transportcalculations further confirms the superiority of the all-Heusler architectureover the conventional Heusler/transition-metal(TM) structure by comparing theirtransmission coefficients and interfacial resistances of parallel conductionelectrons, as well as the macroscopic current-voltage (I-V) characteristics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###All-Heusler giant-magnetoresistance junctions with matched energy bands and Fermi surfaces|Zhaoqiang Bai,Yongqing Cai,Lei Shen,Guchang Han,Yuanping Feng###
(1072831, 1072831)
 Transportcalculations further confirms the superiority of the all-Heusler architectureover the conventional Heusler/transition-metal(TM) structure by comparing theirtransmission coefficients and interfacial resistances of parallel conductionelectrons, as well as the macroscopic current-voltage (I-V) characteristics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###All-Heusler giant-magnetoresistance junctions with matched energy bands and Fermi surfaces|Zhaoqiang Bai,Yongqing Cai,Lei Shen,Guchang Han,Yuanping Feng###
(1072897, 1072897)
 Wesuggest future theoretical and experimental efforts in developing novelall-Heusler GMR junctions for the read heads of the next generationhigh-density hard disk drives (HD<missing VAR>Ds).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ds
###All-Heusler giant-magnetoresistance junctions with matched energy bands and Fermi surfaces|Zhaoqiang Bai,Yongqing Cai,Lei Shen,Guchang Han,Yuanping Feng###
(1072899, 1072899)
 Wesuggest future theoretical and experimental efforts in developing novelall-Heusler GMR junctions for the read heads of the next generationhigh-density hard disk drives (HD<missing VAR>Ds).
EXCEPTION 3: IndexError for Ds
Abstract does not contain any numbers.

In
###Super-magnetoresistance effect in triplet spin valves|F. Romeo,R. Citro###
(1073099, 1073099)
 In this regime asuper-magnetoresistance effect emerges, and the chiral symmetry of the orderparameter of the superconducting spacer is easily recognized.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Longitudinal magnetoresistance in Co-doped BaFe2As2 and LiFeAs single crystals: Interplay between spin fluctuations and charge transport in iron-pnictides|F. Rullier-Albenque,D. Colson,A. Forget###
(1073210, 1073210)
Longitudinal magnetoresistance in Co-doped BaFe2As2 and LiFeAs single crystals Interplay between spin fluctuations and charge transport in iron-pnictides.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BaFe2As2
###Longitudinal magnetoresistance in Co-doped BaFe2As2 and LiFeAs single crystals: Interplay between spin fluctuations and charge transport in iron-pnictides|F. Rullier-Albenque,D. Colson,A. Forget###
(1073214, 1073218)
Longitudinal magnetoresistance in Co-doped BaFe2As2 and LiFeAs single crystals Interplay between spin fluctuations and charge transport in iron-pnictides.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LiFeAs
###Longitudinal magnetoresistance in Co-doped BaFe2As2 and LiFeAs single crystals: Interplay between spin fluctuations and charge transport in iron-pnictides|F. Rullier-Albenque,D. Colson,A. Forget###
(1073222, 1073224)
Longitudinal magnetoresistance in Co-doped BaFe2As2 and LiFeAs single crystals Interplay between spin fluctuations and charge transport in iron-pnictides.
Featurization terminated normally.
0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ba
###Longitudinal magnetoresistance in Co-doped BaFe2As2 and LiFeAs single crystals: Interplay between spin fluctuations and charge transport in iron-pnictides|F. Rullier-Albenque,D. Colson,A. Forget###
(1073278, 1073278)
 The longitudinal in-plane magnetoresistance (LMR) has been measured indifferent Ba(Fe(1-x)Cox)2As2 single crystals and in LiFeAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe(1-x)Co
###Longitudinal magnetoresistance in Co-doped BaFe2As2 and LiFeAs single crystals: Interplay between spin fluctuations and charge transport in iron-pnictides|F. Rullier-Albenque,D. Colson,A. Forget###
(1073280, 1073286)
 The longitudinal in-plane magnetoresistance (LMR) has been measured indifferent Ba(Fe(1-x)Cox)2As2 single crystals and in LiFeAs.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

As2
###Longitudinal magnetoresistance in Co-doped BaFe2As2 and LiFeAs single crystals: Interplay between spin fluctuations and charge transport in iron-pnictides|F. Rullier-Albenque,D. Colson,A. Forget###
(1073290, 1073291)
 The longitudinal in-plane magnetoresistance (LMR) has been measured indifferent Ba(Fe(1-x)Cox)2As2 single crystals and in LiFeAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LiFeAs
###Longitudinal magnetoresistance in Co-doped BaFe2As2 and LiFeAs single crystals: Interplay between spin fluctuations and charge transport in iron-pnictides|F. Rullier-Albenque,D. Colson,A. Forget###
(1073301, 1073303)
 The longitudinal in-plane magnetoresistance (LMR) has been measured indifferent Ba(Fe(1-x)Cox)2As2 single crystals and in LiFeAs.
Featurization terminated normally.
0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H2
###Longitudinal magnetoresistance in Co-doped BaFe2As2 and LiFeAs single crystals: Interplay between spin fluctuations and charge transport in iron-pnictides|F. Rullier-Albenque,D. Colson,A. Forget###
(1073345, 1073346)
 For all thesecompounds, we find a negative LMR in the paramagnetic phase whose magnitudeincreases as H2.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Longitudinal magnetoresistance in Co-doped BaFe2As2 and LiFeAs single crystals: Interplay between spin fluctuations and charge transport in iron-pnictides|F. Rullier-Albenque,D. Colson,A. Forget###
(1073397, 1073397)
 In theCo-doped samples, the absolute value of the LMR coefficient is found todecrease with doping content in the paramagnetic phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Longitudinal magnetoresistance in Co-doped BaFe2As2 and LiFeAs single crystals: Interplay between spin fluctuations and charge transport in iron-pnictides|F. Rullier-Albenque,D. Colson,A. Forget###
(1073402, 1073402)
 In theCo-doped samples, the absolute value of the LMR coefficient is found todecrease with doping content in the paramagnetic phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Longitudinal magnetoresistance in Co-doped BaFe2As2 and LiFeAs single crystals: Interplay between spin fluctuations and charge transport in iron-pnictides|F. Rullier-Albenque,D. Colson,A. Forget###
(1073508, 1073508)
 The analysis of its T<missing VAR>dependence in an itinerant nearly antiferromagnetic Fermi liquid modelevidences that the LMR displays a qualitative change of T<missing VAR> variation withincreasing Co content.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LiFeAs
###Longitudinal magnetoresistance in Co-doped BaFe2As2 and LiFeAs single crystals: Interplay between spin fluctuations and charge transport in iron-pnictides|F. Rullier-Albenque,D. Colson,A. Forget###
(1073568, 1073570)
 The same type of analysis for thenegative LMR measured in LiFeAs suggests that this compound is on the verge ofmagnetism.
Featurization terminated normally.
0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Fluctuation conductivity of disordered superconductors in magnetic fields|Brian Tarasinski,Georg Schwiete###
(1073829, 1073829)
 As anapplication, we study the fluctuation conductivity of films in tilted magneticfields with a special focus on the low-temperature regime.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co2FeAl
###Thermal Stability and Electrical Control of Magnetization of Heusler/Oxide Interface and Non-collinear Spin Transport of Its Junction|Zhaoqiang Bai,Lei Shen,Yongqing Cai,Qingyun Wu,Minggang Zeng,Guchang Han,Yuan Ping Feng###
(1074089, 1074092)
 Here, fromfirst-principles, we investigate thermal stability (both structure andmagnetization) and the electric field control of magnetic anisotropy on Co2FeAl(CFA)/MgO.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CF
###Thermal Stability and Electrical Control of Magnetization of Heusler/Oxide Interface and Non-collinear Spin Transport of Its Junction|Zhaoqiang Bai,Lei Shen,Yongqing Cai,Qingyun Wu,Minggang Zeng,Guchang Han,Yuan Ping Feng###
(1074096, 1074097)
 Here, fromfirst-principles, we investigate thermal stability (both structure andmagnetization) and the electric field control of magnetic anisotropy on Co2FeAl(CFA)/MgO.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Thermal Stability and Electrical Control of Magnetization of Heusler/Oxide Interface and Non-collinear Spin Transport of Its Junction|Zhaoqiang Bai,Lei Shen,Yongqing Cai,Qingyun Wu,Minggang Zeng,Guchang Han,Yuan Ping Feng###
(1074101, 1074102)
 Here, fromfirst-principles, we investigate thermal stability (both structure andmagnetization) and the electric field control of magnetic anisotropy on Co2FeAl(CFA)/MgO.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CF
###Thermal Stability and Electrical Control of Magnetization of Heusler/Oxide Interface and Non-collinear Spin Transport of Its Junction|Zhaoqiang Bai,Lei Shen,Yongqing Cai,Qingyun Wu,Minggang Zeng,Guchang Han,Yuan Ping Feng###
(1074123, 1074124)
 A phase diagram of structural thermal stability of the CFA/MgOinterface is illustrated.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Thermal Stability and Electrical Control of Magnetization of Heusler/Oxide Interface and Non-collinear Spin Transport of Its Junction|Zhaoqiang Bai,Lei Shen,Yongqing Cai,Qingyun Wu,Minggang Zeng,Guchang Han,Yuan Ping Feng###
(1074127, 1074128)
 A phase diagram of structural thermal stability of the CFA/MgOinterface is illustrated.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Thermal Stability and Electrical Control of Magnetization of Heusler/Oxide Interface and Non-collinear Spin Transport of Its Junction|Zhaoqiang Bai,Lei Shen,Yongqing Cai,Qingyun Wu,Minggang Zeng,Guchang Han,Yuan Ping Feng###
(1074154, 1074154)
 An interfacial perpendicular-anisotropy, coming fromthe Fe-O orbital hybridization, provides high magnetic thermal stability and alow stray field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Thermal Stability and Electrical Control of Magnetization of Heusler/Oxide Interface and Non-collinear Spin Transport of Its Junction|Zhaoqiang Bai,Lei Shen,Yongqing Cai,Qingyun Wu,Minggang Zeng,Guchang Han,Yuan Ping Feng###
(1074156, 1074156)
 An interfacial perpendicular-anisotropy, coming fromthe Fe-O orbital hybridization, provides high magnetic thermal stability and alow stray field.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Thermal Stability and Electrical Control of Magnetization of Heusler/Oxide Interface and Non-collinear Spin Transport of Its Junction|Zhaoqiang Bai,Lei Shen,Yongqing Cai,Qingyun Wu,Minggang Zeng,Guchang Han,Yuan Ping Feng###
(1074237, 1074237)
 We find an electric-field-induced giant modification of suchperpendicular-anisotropy via a great magnetoelectric effect (the anisotropyenergy coefficient beta10-7 erg/V cm).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CF
###Thermal Stability and Electrical Control of Magnetization of Heusler/Oxide Interface and Non-collinear Spin Transport of Its Junction|Zhaoqiang Bai,Lei Shen,Yongqing Cai,Qingyun Wu,Minggang Zeng,Guchang Han,Yuan Ping Feng###
(1074285, 1074286)
 Our spin electronic-structure andnon-collinear transport calculations indicate high spin-polarized interfacialstates and good magnetoresistance properties of CFA/MgO/CFA perpendicularmagnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO/CF
###Thermal Stability and Electrical Control of Magnetization of Heusler/Oxide Interface and Non-collinear Spin Transport of Its Junction|Zhaoqiang Bai,Lei Shen,Yongqing Cai,Qingyun Wu,Minggang Zeng,Guchang Han,Yuan Ping Feng###
(1074289, 1074293)
 Our spin electronic-structure andnon-collinear transport calculations indicate high spin-polarized interfacialstates and good magnetoresistance properties of CFA/MgO/CFA perpendicularmagnetic tunnel junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

CrO2
###Anomalous transport in half-metallic ferromagnetic CrO2|M. S. Anwar,J. Aarts###
(1074326, 1074328)
Anomalous transport in half-metallic ferromagnetic CrO2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 6, 'micro', 3],[144.0, 100, 'K', 4]

CrO2
###Anomalous transport in half-metallic ferromagnetic CrO2|M. S. Anwar,J. Aarts###
(1074343, 1074345)
 We have investigated transport properties of CrO2 thin films deposited onTiO2 and sapphire substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 6, 'micro', 2],[127.0, 100, 'K', 3]

TiO2
###Anomalous transport in half-metallic ferromagnetic CrO2|M. S. Anwar,J. Aarts###
(1074356, 1074358)
 We have investigated transport properties of CrO2 thin films deposited onTiO2 and sapphire substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 6, 'micro', 2],[114.0, 100, 'K', 3]

TiO2
###Anomalous transport in half-metallic ferromagnetic CrO2|M. S. Anwar,J. Aarts###
(1074415, 1074417)
 The residual resistivity is of the order of 6 micro-ohhmcm forfilms deposited on TiO2 and two times higher for films on sapphire substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 6, 'micro', 0],[55.0, 100, 'K', 1]

At
###Anomalous transport in half-metallic ferromagnetic CrO2|M. S. Anwar,J. Aarts###
(1074522, 1074522)
 Atlower temperatures the MR is a linear function of the applied field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 6, 'micro', 3],[50.0, 100, 'K', 2]

CrO2
###Anomalous transport in half-metallic ferromagnetic CrO2|M. S. Anwar,J. Aarts###
(1074612, 1074614)
 The planar Hall effectmeasurements reveal that the CrO2 thin films are not in a single magneticdomain state even for films deposited on an isostructural TiO2 substrate.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[210.0, 6, 'micro', 6],[140.0, 100, 'K', 5]

TiO2
###Anomalous transport in half-metallic ferromagnetic CrO2|M. S. Anwar,J. Aarts###
(1074651, 1074653)
 The planar Hall effectmeasurements reveal that the CrO2 thin films are not in a single magneticdomain state even for films deposited on an isostructural TiO2 substrate.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[249.0, 6, 'micro', 6],[179.0, 100, 'K', 5]

C
###Two phase transitions induced by a magnetic field in graphite|Benoît Fauqué,David LeBoeuf,Baptiste Vignolle,Marc Nardone,Cyril Proust,Kamran Behnia###
(1074765, 1074765)
 The phase transition induced ingraphite by a strong magnetic field, and believed to be a Charge Density Wave(CD<missing VAR>W), is the only experimentally established case of such instabilities.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 80, 'T', 1]

W
###Two phase transitions induced by a magnetic field in graphite|Benoît Fauqué,David LeBoeuf,Baptiste Vignolle,Marc Nardone,Cyril Proust,Kamran Behnia###
(1074767, 1074767)
 The phase transition induced ingraphite by a strong magnetic field, and believed to be a Charge Density Wave(CD<missing VAR>W), is the only experimentally established case of such instabilities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 80, 'T', 1]

In
###Two phase transitions induced by a magnetic field in graphite|Benoît Fauqué,David LeBoeuf,Baptiste Vignolle,Marc Nardone,Cyril Proust,Kamran Behnia###
(1074868, 1074868)
 In both states, an energy gap opens up in the out-of-plane conductivityand coexists with an unexpected in-plane metallicity for a fully gap bulksystem.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 80, 'T', 1]

Na2IrO3
###Mott Variable Range Hopping and Weak Antilocalization Effect in Heteroepitaxial Na2IrO3 Thin Films|Marcus Jenderka,José Barzola-Quiquia,Zhipeng Zhang,Heiko Frenzel,Marius Grundmann,Michael Lorenz###
(1075000, 1075004)
Mott Variable Range Hopping and Weak Antilocalization Effect in Heteroepitaxial Na2IrO3 Thin Films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 300, 'K', 3],[160.0, 40, 'K', 3],[187.0, 200, 'meV', 4],[200.0, 5, 'd', 4],[215.0, 3, 'T', 5],[218.0, 25, 'K', 5]

Na2IrO3
###Mott Variable Range Hopping and Weak Antilocalization Effect in Heteroepitaxial Na2IrO3 Thin Films|Marcus Jenderka,José Barzola-Quiquia,Zhipeng Zhang,Heiko Frenzel,Marius Grundmann,Michael Lorenz###
(1075069, 1075073)
 Here, heteroepitaxial Na2IrO3 thin films withexcellent (001) out-of-plane crystalline orientation and well defined in-planeepitaxial relationship are presented on various oxide substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 300, 'K', 1],[91.0, 40, 'K', 1],[118.0, 200, 'meV', 2],[131.0, 5, 'd', 2],[146.0, 3, 'T', 3],[149.0, 25, 'K', 3]

Ir
###Mott Variable Range Hopping and Weak Antilocalization Effect in Heteroepitaxial Na2IrO3 Thin Films|Marcus Jenderka,José Barzola-Quiquia,Zhipeng Zhang,Heiko Frenzel,Marius Grundmann,Michael Lorenz###
(1075203, 1075203)
 Optical experiments show the onset ofa small optical gap of about 200 meV and a splitting of the Ir 5d-t2g manifold.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 300, 'K', 1],[39.0, 40, 'K', 1],[12.0, 200, 'meV', 0],[1.0, 5, 'd', 0],[16.0, 3, 'T', 1],[19.0, 25, 'K', 1]

Na2IrO3
###Mott Variable Range Hopping and Weak Antilocalization Effect in Heteroepitaxial Na2IrO3 Thin Films|Marcus Jenderka,José Barzola-Quiquia,Zhipeng Zhang,Heiko Frenzel,Marius Grundmann,Michael Lorenz###
(1075288, 1075292)
 This effect can be associated with surface states in atopological insulator and hence supports proposals for a topological insulatorphase present in Na2IrO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 300, 'K', 3],[124.0, 40, 'K', 3],[97.0, 200, 'meV', 2],[84.0, 5, 'd', 2],[69.0, 3, 'T', 1],[66.0, 25, 'K', 1]

UHV
###Large room-temperature magnetoresistance in lateral organic spin valves fabricated by in-situ shadow evaporation|M. Grünewald,J. Kleinlein,F. Syrowatka,F. Würthner,L. W. Molenkamp,G. Schmidt###
(1075399, 1075401)
 The fabication process is based onin-situ shadow evaporation under UHV conditions and therefore yields clean andoxygen-free interfaces between the ferromagnetic metallic electrodes and theorganic semiconductor.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[30.0, 100, ',', 1],[90.0, -3, ',', 1],[94.0, 9, ',', 1],[180.0, 50, ',', 3]

N
###Large room-temperature magnetoresistance in lateral organic spin valves fabricated by in-situ shadow evaporation|M. Grünewald,J. Kleinlein,F. Syrowatka,F. Würthner,L. W. Molenkamp,G. Schmidt###
(1075483, 1075483)
 The spin valve devices consist of Nickel and Cobalt-ironelectrodes and the high mobility emphn<missing VAR>-type organic semiconductorN,N-bis(heptafluorobutyl)-3,49,10-perylene diimide.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 100, ',', 2],[8.0, -3, ',', 0],[12.0, 9, ',', 0],[98.0, 50, ',', 2]

N
###Large room-temperature magnetoresistance in lateral organic spin valves fabricated by in-situ shadow evaporation|M. Grünewald,J. Kleinlein,F. Syrowatka,F. Würthner,L. W. Molenkamp,G. Schmidt###
(1075485, 1075485)
 The spin valve devices consist of Nickel and Cobalt-ironelectrodes and the high mobility emphn<missing VAR>-type organic semiconductorN,N-bis(heptafluorobutyl)-3,49,10-perylene diimide.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 100, ',', 2],[6.0, -3, ',', 0],[10.0, 9, ',', 0],[96.0, 50, ',', 2]

Fe2CoSi
###Crossover of magnetoresistance in the zerogap half-metallic Heusler alloy Fe2CoSi|Y. Du,G. Z. Xu,X. M. Zhang,Z. Y. Liu,S. Y. Yu,E. K. Liu,W. H. Wang,G. H. Wu###
(1075633, 1075636)
Crossover of magnetoresistance in the zerogap half-metallic Heusler alloy Fe2CoSi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0.5,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 5, 'K', 3],[169.0, 1038, 'K', 3]

Fe2CoSi
###Crossover of magnetoresistance in the zerogap half-metallic Heusler alloy Fe2CoSi|Y. Du,G. Z. Xu,X. M. Zhang,Z. Y. Liu,S. Y. Yu,E. K. Liu,W. H. Wang,G. H. Wu###
(1075672, 1075675)
 This work reports on the band structure and magneto-transport investigationsof the inverse Heusler compound Fe2CoSi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0.5,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 5, 'K', 2],[130.0, 1038, 'K', 2]

Fe2CoSi
###Crossover of magnetoresistance in the zerogap half-metallic Heusler alloy Fe2CoSi|Y. Du,G. Z. Xu,X. M. Zhang,Z. Y. Liu,S. Y. Yu,E. K. Liu,W. H. Wang,G. H. Wu###
(1075691, 1075694)
 The first-principles calculationsreveal that Fe2CoSi has a very peculiar band structure with a conductingproperty in the majority spin channel and a nearly zero bandgap in the minorityspin channel.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0.5,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 5, 'K', 1],[111.0, 1038, 'K', 1]

Fe2CoSi
###Crossover of magnetoresistance in the zerogap half-metallic Heusler alloy Fe2CoSi|Y. Du,G. Z. Xu,X. M. Zhang,Z. Y. Liu,S. Y. Yu,E. K. Liu,W. H. Wang,G. H. Wu###
(1075753, 1075756)
 The synthesized Fe2CoSi sample shows a high-ordered inverseHeusler structure with a magnetic moment of 4.88 muB at 5 K and a high Curietemperature of 1038 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0.5,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 5, 'K', 0],[49.0, 1038, 'K', 0]

B
###Crossover of magnetoresistance in the zerogap half-metallic Heusler alloy Fe2CoSi|Y. Du,G. Z. Xu,X. M. Zhang,Z. Y. Liu,S. Y. Yu,E. K. Liu,W. H. Wang,G. H. Wu###
(1075788, 1075788)
 The synthesized Fe2CoSi sample shows a high-ordered inverseHeusler structure with a magnetic moment of 4.88 muB at 5 K and a high Curietemperature of 1038 K.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 5, 'K', 0],[17.0, 1038, 'K', 0]

S
###Intrinsic spin-relaxation induced negative tunnel magnetoresistance in a single-molecule magnet|Haiqing Xie,Qiang Wang,Hai-Bin Xue,HuJun Jiao,J. -Q. Liang###
(1075991, 1075991)
 We investigate theoretically the effects of intrinsic spin-relaxation on thespin-dependent transport through a single-molecule magnet (SMM), which isweakly coupled to ferromagnetic leads.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Intrinsic spin-relaxation induced negative tunnel magnetoresistance in a single-molecule magnet|Haiqing Xie,Qiang Wang,Hai-Bin Xue,HuJun Jiao,J. -Q. Liang###
(1076161, 1076161)
 Moreover, with an external magnetic field along the easy-axis of SMM, alarge negative TMR is found when the relaxation strength increases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Impurity-assisted tunneling magnetoresistance under weak magnetic field|Oihana Txoperena,Yang Song,Lan Qing,Marco Gobbi,Luis E. Hueso,Hanan Dery,Fèlix Casanova###
(1076460, 1076460)
 In both cases, the effectreflects on/off switching of the tunneling current through impurity channels bythe external magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

InMnP
###Ferromagnetism and impurity band in a new magnetic semiconductor: InMnP|M. Khalid,E. Weschke,W. Skorupa,M. Helm,S. Zhou###
(1076604, 1076606)
Ferromagnetism and impurity band in a new magnetic semiconductor InMnP.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 42, 'K', 2]

InMnP
###Ferromagnetism and impurity band in a new magnetic semiconductor: InMnP|M. Khalid,E. Weschke,W. Skorupa,M. Helm,S. Zhou###
(1076617, 1076619)
 We have synthesized ferromagnetic InMnP, a member of III-Mn-V ferromagneticsemiconductor family, by Mn ion implantation and pulsed laser annealing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 42, 'K', 1]

III
###Ferromagnetism and impurity band in a new magnetic semiconductor: InMnP|M. Khalid,E. Weschke,W. Skorupa,M. Helm,S. Zhou###
(1076628, 1076630)
 We have synthesized ferromagnetic InMnP, a member of III-Mn-V ferromagneticsemiconductor family, by Mn ion implantation and pulsed laser annealing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 42, 'K', 1]

Mn
###Ferromagnetism and impurity band in a new magnetic semiconductor: InMnP|M. Khalid,E. Weschke,W. Skorupa,M. Helm,S. Zhou###
(1076632, 1076632)
 We have synthesized ferromagnetic InMnP, a member of III-Mn-V ferromagneticsemiconductor family, by Mn ion implantation and pulsed laser annealing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 42, 'K', 1]

V
###Ferromagnetism and impurity band in a new magnetic semiconductor: InMnP|M. Khalid,E. Weschke,W. Skorupa,M. Helm,S. Zhou###
(1076634, 1076634)
 We have synthesized ferromagnetic InMnP, a member of III-Mn-V ferromagneticsemiconductor family, by Mn ion implantation and pulsed laser annealing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 42, 'K', 1]

Mn
###Ferromagnetism and impurity band in a new magnetic semiconductor: InMnP|M. Khalid,E. Weschke,W. Skorupa,M. Helm,S. Zhou###
(1076646, 1076646)
 We have synthesized ferromagnetic InMnP, a member of III-Mn-V ferromagneticsemiconductor family, by Mn ion implantation and pulsed laser annealing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 42, 'K', 1]

InMnP
###Ferromagnetism and impurity band in a new magnetic semiconductor: InMnP|M. Khalid,E. Weschke,W. Skorupa,M. Helm,S. Zhou###
(1076747, 1076749)
 Large values of negativemagnetoresistance and magnetic circular dichroism as well as anomalous Halleffect are further evidences of a ferromagnetic order in InMnP.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 42, 'K', 1]

InMnP
###Ferromagnetism and impurity band in a new magnetic semiconductor: InMnP|M. Khalid,E. Weschke,W. Skorupa,M. Helm,S. Zhou###
(1076773, 1076775)
 An effort ismade to understand the transport mechanism in InMnP using the theoreticalmodels.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 42, 'K', 2]

InP
###Ferromagnetism and impurity band in a new magnetic semiconductor: InMnP|M. Khalid,E. Weschke,W. Skorupa,M. Helm,S. Zhou###
(1076801, 1076802)
 We find that the valence band of InP does not merge with the impurityband of the heavily doped ferromagnetic InMnP.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 42, 'K', 3]

InMnP
###Ferromagnetism and impurity band in a new magnetic semiconductor: InMnP|M. Khalid,E. Weschke,W. Skorupa,M. Helm,S. Zhou###
(1076829, 1076831)
 We find that the valence band of InP does not merge with the impurityband of the heavily doped ferromagnetic InMnP.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 42, 'K', 3]

Mn
###Ferromagnetism and impurity band in a new magnetic semiconductor: InMnP|M. Khalid,E. Weschke,W. Skorupa,M. Helm,S. Zhou###
(1076857, 1076857)
 Our results suggest thatimpurity band conduction is a characteristic of Mn-doped III-V semiconductorswhich have deep Mn-acceptor levels.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 42, 'K', 4]

III
###Ferromagnetism and impurity band in a new magnetic semiconductor: InMnP|M. Khalid,E. Weschke,W. Skorupa,M. Helm,S. Zhou###
(1076861, 1076863)
 Our results suggest thatimpurity band conduction is a characteristic of Mn-doped III-V semiconductorswhich have deep Mn-acceptor levels.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 42, 'K', 4]

V
###Ferromagnetism and impurity band in a new magnetic semiconductor: InMnP|M. Khalid,E. Weschke,W. Skorupa,M. Helm,S. Zhou###
(1076865, 1076865)
 Our results suggest thatimpurity band conduction is a characteristic of Mn-doped III-V semiconductorswhich have deep Mn-acceptor levels.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 42, 'K', 4]

Mn
###Ferromagnetism and impurity band in a new magnetic semiconductor: InMnP|M. Khalid,E. Weschke,W. Skorupa,M. Helm,S. Zhou###
(1076876, 1076876)
 Our results suggest thatimpurity band conduction is a characteristic of Mn-doped III-V semiconductorswhich have deep Mn-acceptor levels.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[180.0, 42, 'K', 4]

Fe/MgO
###Impurity induced enhancement of perpendicular magnetic anisotropy in Fe/MgO tunnel junctions|A. Hallal,B. Dieny,M. Chshiev###
(1076907, 1076910)
Impurity induced enhancement of perpendicular magnetic anisotropy in Fe/MgO tunnel junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

(Cr)
###Impurity induced enhancement of perpendicular magnetic anisotropy in Fe/MgO tunnel junctions|A. Hallal,B. Dieny,M. Chshiev###
(1076939, 1076941)
 Using first-principles calculations, we investigated the impact of chromium(Cr) and vanadium (V) impurities on the magnetic anisotropy and spinpolarization in Fe/MgO magnetic tunnel junctions.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(V)
###Impurity induced enhancement of perpendicular magnetic anisotropy in Fe/MgO tunnel junctions|A. Hallal,B. Dieny,M. Chshiev###
(1076947, 1076949)
 Using first-principles calculations, we investigated the impact of chromium(Cr) and vanadium (V) impurities on the magnetic anisotropy and spinpolarization in Fe/MgO magnetic tunnel junctions.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/MgO
###Impurity induced enhancement of perpendicular magnetic anisotropy in Fe/MgO tunnel junctions|A. Hallal,B. Dieny,M. Chshiev###
(1076970, 1076973)
 Using first-principles calculations, we investigated the impact of chromium(Cr) and vanadium (V) impurities on the magnetic anisotropy and spinpolarization in Fe/MgO magnetic tunnel junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

P
###Impurity induced enhancement of perpendicular magnetic anisotropy in Fe/MgO tunnel junctions|A. Hallal,B. Dieny,M. Chshiev###
(1077039, 1077039)
 It is demonstrated usinglayer resolved anisotropy calculation technique, that while the impurity nearthe interface has a drastic effect in decreasing the perpendicular magneticanisotropy (PM<missing VAR>A), its position within the bulk allows maintaining high surfacePM<missing VAR>A.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Impurity induced enhancement of perpendicular magnetic anisotropy in Fe/MgO tunnel junctions|A. Hallal,B. Dieny,M. Chshiev###
(1077064, 1077064)
 It is demonstrated usinglayer resolved anisotropy calculation technique, that while the impurity nearthe interface has a drastic effect in decreasing the perpendicular magneticanisotropy (PM<missing VAR>A), its position within the bulk allows maintaining high surfacePM<missing VAR>A.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr
###Impurity induced enhancement of perpendicular magnetic anisotropy in Fe/MgO tunnel junctions|A. Hallal,B. Dieny,M. Chshiev###
(1077117, 1077117)
 Moreover, the effective magnetic anisotropy has a strong tendency to gofrom in-plane to out-of-plane character as a function of Cr and V concentrationfavoring out-of-plane magnetization direction for 1.5 nm thick Fe layers atimpurity concentrations above 20 %.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Impurity induced enhancement of perpendicular magnetic anisotropy in Fe/MgO tunnel junctions|A. Hallal,B. Dieny,M. Chshiev###
(1077121, 1077121)
 Moreover, the effective magnetic anisotropy has a strong tendency to gofrom in-plane to out-of-plane character as a function of Cr and V concentrationfavoring out-of-plane magnetization direction for 1.5 nm thick Fe layers atimpurity concentrations above 20 %.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Impurity induced enhancement of perpendicular magnetic anisotropy in Fe/MgO tunnel junctions|A. Hallal,B. Dieny,M. Chshiev###
(1077146, 1077146)
 Moreover, the effective magnetic anisotropy has a strong tendency to gofrom in-plane to out-of-plane character as a function of Cr and V concentrationfavoring out-of-plane magnetization direction for 1.5 nm thick Fe layers atimpurity concentrations above 20 %.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Impurity induced enhancement of perpendicular magnetic anisotropy in Fe/MgO tunnel junctions|A. Hallal,B. Dieny,M. Chshiev###
(1077164, 1077164)
 At the same time, spin polarization is notaffected and even enhanced in most situations favoring an increase of tunnelmagnetoresistance (TMR) values.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cd3As2
###Ultrahigh mobility and giant magnetoresistance in the Dirac semimetal Cd$_3$As$_2$|Tian Liang,Quinn Gibson,Mazhar N. Ali,Minhao Liu,R. J. Cava,N. P. Ong###
(1077244, 1077247)
Ultrahigh mobility and giant magnetoresistance in the Dirac semimetal Cd3As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 3, 'D', 1],[75.0, 4, ',', 2],[139.0, 2, ',', 3],[243.0, 4, 'K', 5]

Na3Bi
###Ultrahigh mobility and giant magnetoresistance in the Dirac semimetal Cd$_3$As$_2$|Tian Liang,Quinn Gibson,Mazhar N. Ali,Minhao Liu,R. J. Cava,N. P. Ong###
(1077297, 1077299)
 Na3Biand Cd3As2 were predicted to be Dirac semimetals [4,5], and recentlyconfirmed to be so by photoemission [6-8].
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 3, 'D', 1],[23.0, 4, ',', 0],[87.0, 2, ',', 1],[191.0, 4, 'K', 3]

Cd3As2
###Ultrahigh mobility and giant magnetoresistance in the Dirac semimetal Cd$_3$As$_2$|Tian Liang,Quinn Gibson,Mazhar N. Ali,Minhao Liu,R. J. Cava,N. P. Ong###
(1077304, 1077307)
 Na3Biand Cd3As2 were predicted to be Dirac semimetals [4,5], and recentlyconfirmed to be so by photoemission [6-8].
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 3, 'D', 1],[15.0, 4, ',', 0],[79.0, 2, ',', 1],[183.0, 4, 'K', 3]

H
###Ultrahigh mobility and giant magnetoresistance in the Dirac semimetal Cd$_3$As$_2$|Tian Liang,Quinn Gibson,Mazhar N. Ali,Minhao Liu,R. J. Cava,N. P. Ong###
(1077371, 1077371)
 Several novel transport propertiesin a magnetic field bf H have been proposed for Dirac semimetals [2,9-11].
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 3, 'D', 2],[49.0, 4, ',', 1],[15.0, 2, ',', 0],[119.0, 4, 'K', 2]

Cd3As2
###Ultrahigh mobility and giant magnetoresistance in the Dirac semimetal Cd$_3$As$_2$|Tian Liang,Quinn Gibson,Mazhar N. Ali,Minhao Liu,R. J. Cava,N. P. Ong###
(1077409, 1077412)
Here we report an interesting property in Cd3As2 that was unpredicted,namely a remarkable protection mechanism that strongly suppressesback-scattering in zero bf H.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 3, 'D', 3],[87.0, 4, ',', 2],[23.0, 2, ',', 1],[78.0, 4, 'K', 1]

H
###Ultrahigh mobility and giant magnetoresistance in the Dirac semimetal Cd$_3$As$_2$|Tian Liang,Quinn Gibson,Mazhar N. Ali,Minhao Liu,R. J. Cava,N. P. Ong###
(1077449, 1077449)
Here we report an interesting property in Cd3As2 that was unpredicted,namely a remarkable protection mechanism that strongly suppressesback-scattering in zero bf H.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 3, 'D', 3],[127.0, 4, ',', 2],[63.0, 2, ',', 1],[41.0, 4, 'K', 1]

In
###Ultrahigh mobility and giant magnetoresistance in the Dirac semimetal Cd$_3$As$_2$|Tian Liang,Quinn Gibson,Mazhar N. Ali,Minhao Liu,R. J. Cava,N. P. Ong###
(1077452, 1077452)
 In single crystals, the protection results ina very high mobility that exceeds >107 cm2/Vs below 4 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[191.0, 3, 'D', 4],[130.0, 4, ',', 3],[66.0, 2, ',', 2],[38.0, 4, 'K', 0]

H
###Ultrahigh mobility and giant magnetoresistance in the Dirac semimetal Cd$_3$As$_2$|Tian Liang,Quinn Gibson,Mazhar N. Ali,Minhao Liu,R. J. Cava,N. P. Ong###
(1077540, 1077540)
 The lifting of this protection by bf H leads to an unusualgiant bf H-linear magnetoresistance that violates Kohlers<missing VAR> rule.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[279.0, 3, 'D', 6],[218.0, 4, ',', 5],[154.0, 2, ',', 4],[50.0, 4, 'K', 2]

H
###Ultrahigh mobility and giant magnetoresistance in the Dirac semimetal Cd$_3$As$_2$|Tian Liang,Quinn Gibson,Mazhar N. Ali,Minhao Liu,R. J. Cava,N. P. Ong###
(1077555, 1077555)
 The lifting of this protection by bf H leads to an unusualgiant bf H-linear magnetoresistance that violates Kohlers<missing VAR> rule.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[294.0, 3, 'D', 6],[233.0, 4, ',', 5],[169.0, 2, ',', 4],[65.0, 4, 'K', 2]

H
###Ultrahigh mobility and giant magnetoresistance in the Dirac semimetal Cd$_3$As$_2$|Tian Liang,Quinn Gibson,Mazhar N. Ali,Minhao Liu,R. J. Cava,N. P. Ong###
(1077602, 1077602)
 We discusshow this may relate to changes to the Fermi surface induced by bf H.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[341.0, 3, 'D', 7],[280.0, 4, ',', 6],[216.0, 2, ',', 5],[112.0, 4, 'K', 3]

KKY
###RKKY interaction between extended magnetic defect lines in graphene|Paul D. Gorman,John M. Duffy,Stephen R. Power,Mauro S. Ferreira###
(1077614, 1077616)
R<missing VAR>KKY interaction between extended magnetic defect lines in graphene.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Y
###RKKY interaction between extended magnetic defect lines in graphene|Paul D. Gorman,John M. Duffy,Stephen R. Power,Mauro S. Ferreira###
(1077747, 1077747)
 A range of physical features, such as magnetotransport and overallmagnetic moment formation, are predicated upon this magnetic coupling, oftenreferred to as the Ruderman-Kittel-Kasuya-Yosida (R<missing VAR>KKY) interaction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

KKY
###RKKY interaction between extended magnetic defect lines in graphene|Paul D. Gorman,John M. Duffy,Stephen R. Power,Mauro S. Ferreira###
(1077765, 1077767)
 Recenttheoretical studies on the R<missing VAR>KKY in graphene have been motivated by possiblespintronic applications of magnetically doped graphene systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###RKKY interaction between extended magnetic defect lines in graphene|Paul D. Gorman,John M. Duffy,Stephen R. Power,Mauro S. Ferreira###
(1077799, 1077799)
 In this work acombination of analytic and numerical techniques are used to examine theeffects of defect dimensionality on such an interaction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Magnetic-Field Induced Semimetal in Topological Crystalline Insulator Thin Films|Motohiko Ezawa###
(1078012, 1078012)
 We investigate electromagnetic properties of a topological crystallineinsulator (T<missing VAR>CI) thin film under external electromagnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 3, 'D', 4],[176.0, 2, 'D', 5]

CI
###Magnetic-Field Induced Semimetal in Topological Crystalline Insulator Thin Films|Motohiko Ezawa###
(1078031, 1078032)
 The T<missing VAR>CI thinfilm is a topological insulator indexed by the mirror-Chern number.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 3, 'D', 3],[156.0, 2, 'D', 4]

Fe3O4
###Magnetic properties of epitaxial Fe$_3$O$_4$ films with various crystal orientations and TMR effect in room temperature|Taro Nagahama,Yuya Matsuda,Kazuya Tate,Shungo Hiratani,Yusuke Watanabe,Takashi Yanase,Toshihiro Shimada###
(1078290, 1078293)
Magnetic properties of epitaxial Fe3O4 films with various crystal orientations and TMR effect in room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[324.0, -12, '%', 8]

Fe3O4
###Magnetic properties of epitaxial Fe$_3$O$_4$ films with various crystal orientations and TMR effect in room temperature|Taro Nagahama,Yuya Matsuda,Kazuya Tate,Shungo Hiratani,Yusuke Watanabe,Takashi Yanase,Toshihiro Shimada###
(1078320, 1078323)
 Fe3O4 is a ferrimagnetic spinel ferrite that exhibits electricconductivity at room temperature (RT).
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[294.0, -12, '%', 7]

Fe3O4
###Magnetic properties of epitaxial Fe$_3$O$_4$ films with various crystal orientations and TMR effect in room temperature|Taro Nagahama,Yuya Matsuda,Kazuya Tate,Shungo Hiratani,Yusuke Watanabe,Takashi Yanase,Toshihiro Shimada###
(1078405, 1078408)
 Although the material has been predictedto be a half metal according to ab-initio calculations, magnetic tunneljunctions (MTJs) with Fe3O4 electrodes have demonstrated a small tunnelmagnetoresistance effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[209.0, -12, '%', 6]

Fe3O4
###Magnetic properties of epitaxial Fe$_3$O$_4$ films with various crystal orientations and TMR effect in room temperature|Taro Nagahama,Yuya Matsuda,Kazuya Tate,Shungo Hiratani,Yusuke Watanabe,Takashi Yanase,Toshihiro Shimada###
(1078476, 1078479)
 Here, we report on the magnetic properties ofepitaxial Fe3O4 films with various crystal orientations.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, -12, '%', 4]

In
###Magnetic properties of epitaxial Fe$_3$O$_4$ films with various crystal orientations and TMR effect in room temperature|Taro Nagahama,Yuya Matsuda,Kazuya Tate,Shungo Hiratani,Yusuke Watanabe,Takashi Yanase,Toshihiro Shimada###
(1078514, 1078514)
 Inparticular, Fe3O4(110) films exhibited in-plane uniaxial magneticanisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, -12, '%', 2]

O4
###Magnetic properties of epitaxial Fe$_3$O$_4$ films with various crystal orientations and TMR effect in room temperature|Taro Nagahama,Yuya Matsuda,Kazuya Tate,Shungo Hiratani,Yusuke Watanabe,Takashi Yanase,Toshihiro Shimada###
(1078522, 1078523)
 Inparticular, Fe3O4(110) films exhibited in-plane uniaxial magneticanisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, -12, '%', 2]

Fe3O4
###Magnetic properties of epitaxial Fe$_3$O$_4$ films with various crystal orientations and TMR effect in room temperature|Taro Nagahama,Yuya Matsuda,Kazuya Tate,Shungo Hiratani,Yusuke Watanabe,Takashi Yanase,Toshihiro Shimada###
(1078559, 1078562)
 With respect to the squareness of hysteresis, Fe3O4 (111)demonstrated the largest squareness.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, -12, '%', 1]

O4
###Magnetic properties of epitaxial Fe$_3$O$_4$ films with various crystal orientations and TMR effect in room temperature|Taro Nagahama,Yuya Matsuda,Kazuya Tate,Shungo Hiratani,Yusuke Watanabe,Takashi Yanase,Toshihiro Shimada###
(1078594, 1078595)
 Furthermore, we fabricated MTJs withFe3O4(110) electrodes, and obtained an TMR effect of -12% at RT.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, -12, '%', 0]

Fe3O4
###Magnetic properties of epitaxial Fe$_3$O$_4$ films with various crystal orientations and TMR effect in room temperature|Taro Nagahama,Yuya Matsuda,Kazuya Tate,Shungo Hiratani,Yusuke Watanabe,Takashi Yanase,Toshihiro Shimada###
(1078653, 1078656)
 Thenegative TMR ratio corresponded to the negative spin polarization ofFe3O4 predicted from band calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, -12, '%', 1]

Mn5Ge3
###Magnetotransport in ferromagnetic Mn5Ge3, Mn5Ge3C0.8, and Mn5Si3C0.8 thin films|Christoph Sürgers,Gerda Fischer,Patrick Winkel,Hilbert v. Löhneysen###
(1078681, 1078684)
Magnetotransport in ferromagnetic Mn5Ge3, Mn5Ge3C0.8, and Mn5Si3C0.8 thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.625,0,0,0,0,0,0,0.375,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn5Ge3C0.8
###Magnetotransport in ferromagnetic Mn5Ge3, Mn5Ge3C0.8, and Mn5Si3C0.8 thin films|Christoph Sürgers,Gerda Fischer,Patrick Winkel,Hilbert v. Löhneysen###
(1078687, 1078692)
Magnetotransport in ferromagnetic Mn5Ge3, Mn5Ge3C0.8, and Mn5Si3C0.8 thin films.
Featurization terminated normally.
0,0,0,0,0,0.09090909090909091,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5681818181818181,0,0,0,0,0,0,0.3409090909090909,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn5Si3C0.8
###Magnetotransport in ferromagnetic Mn5Ge3, Mn5Ge3C0.8, and Mn5Si3C0.8 thin films|Christoph Sürgers,Gerda Fischer,Patrick Winkel,Hilbert v. Löhneysen###
(1078697, 1078702)
Magnetotransport in ferromagnetic Mn5Ge3, Mn5Ge3C0.8, and Mn5Si3C0.8 thin films.
Featurization terminated normally.
0,0,0,0,0,0.09090909090909091,0,0,0,0,0,0,0,0.3409090909090909,0,0,0,0,0,0,0,0,0,0,0.5681818181818181,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn5Ge3
###Magnetotransport in ferromagnetic Mn5Ge3, Mn5Ge3C0.8, and Mn5Si3C0.8 thin films|Christoph Sürgers,Gerda Fischer,Patrick Winkel,Hilbert v. Löhneysen###
(1078740, 1078743)
 The electrical resistivity, anisotropic magnetoresistance (AMR), andanomalous Hall effect of ferromagnetic Mn5Ge3, Mn5Ge3C0.8, and Mn5Si3C0.8 thinfilms has been investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.625,0,0,0,0,0,0,0.375,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn5Ge3C0.8
###Magnetotransport in ferromagnetic Mn5Ge3, Mn5Ge3C0.8, and Mn5Si3C0.8 thin films|Christoph Sürgers,Gerda Fischer,Patrick Winkel,Hilbert v. Löhneysen###
(1078746, 1078751)
 The electrical resistivity, anisotropic magnetoresistance (AMR), andanomalous Hall effect of ferromagnetic Mn5Ge3, Mn5Ge3C0.8, and Mn5Si3C0.8 thinfilms has been investigated.
Featurization terminated normally.
0,0,0,0,0,0.09090909090909091,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5681818181818181,0,0,0,0,0,0,0.3409090909090909,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn5Si3C0.8
###Magnetotransport in ferromagnetic Mn5Ge3, Mn5Ge3C0.8, and Mn5Si3C0.8 thin films|Christoph Sürgers,Gerda Fischer,Patrick Winkel,Hilbert v. Löhneysen###
(1078756, 1078761)
 The electrical resistivity, anisotropic magnetoresistance (AMR), andanomalous Hall effect of ferromagnetic Mn5Ge3, Mn5Ge3C0.8, and Mn5Si3C0.8 thinfilms has been investigated.
Featurization terminated normally.
0,0,0,0,0,0.09090909090909091,0,0,0,0,0,0,0,0.3409090909090909,0,0,0,0,0,0,0,0,0,0,0.5681818181818181,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn5Si3C0.8
###Magnetotransport in ferromagnetic Mn5Ge3, Mn5Ge3C0.8, and Mn5Si3C0.8 thin films|Christoph Sürgers,Gerda Fischer,Patrick Winkel,Hilbert v. Löhneysen###
(1078829, 1078834)
 While for ferromagnetic Mn5Si3C0.8 the normal Hallcoefficient R<missing VAR>0 and the AMR ratio are independent of temperature, theseparameters strongly increase with temperature for the germanide films.
Featurization terminated normally.
0,0,0,0,0,0.09090909090909091,0,0,0,0,0,0,0,0.3409090909090909,0,0,0,0,0,0,0,0,0,0,0.5681818181818181,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ge
###Magnetotransport in ferromagnetic Mn5Ge3, Mn5Ge3C0.8, and Mn5Si3C0.8 thin films|Christoph Sürgers,Gerda Fischer,Patrick Winkel,Hilbert v. Löhneysen###
(1078937, 1078937)
 Thisdifference is attributed to the different hybridization of electronic states inthe materials due different lattice parameters and different atomicconfigurations (Ge vs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Magnetotransport in ferromagnetic Mn5Ge3, Mn5Ge3C0.8, and Mn5Si3C0.8 thin films|Christoph Sürgers,Gerda Fischer,Patrick Winkel,Hilbert v. Löhneysen###
(1078942, 1078942)
 Si metalloid).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nd2
###Exchange bias in phase-segregated Nd2/3Ca1/3MnO3 as a function of temperature and cooling magnetic fields|Elena Fertman,Sergiy Dolya,Vladimir Desnenko,Liudmia A. Pozhar,Marcela Kajnakova,Alexander Feher###
(1079322, 1079323)
Exchange bias in phase-segregated Nd2/3Ca1/3MnO3 as a function of temperature and cooling magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 70, 'K', 1]

Ca1
###Exchange bias in phase-segregated Nd2/3Ca1/3MnO3 as a function of temperature and cooling magnetic fields|Elena Fertman,Sergiy Dolya,Vladimir Desnenko,Liudmia A. Pozhar,Marcela Kajnakova,Alexander Feher###
(1079326, 1079327)
Exchange bias in phase-segregated Nd2/3Ca1/3MnO3 as a function of temperature and cooling magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 70, 'K', 1]

MnO3
###Exchange bias in phase-segregated Nd2/3Ca1/3MnO3 as a function of temperature and cooling magnetic fields|Elena Fertman,Sergiy Dolya,Vladimir Desnenko,Liudmia A. Pozhar,Marcela Kajnakova,Alexander Feher###
(1079330, 1079332)
Exchange bias in phase-segregated Nd2/3Ca1/3MnO3 as a function of temperature and cooling magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 70, 'K', 1]

B
###Exchange bias in phase-segregated Nd2/3Ca1/3MnO3 as a function of temperature and cooling magnetic fields|Elena Fertman,Sergiy Dolya,Vladimir Desnenko,Liudmia A. Pozhar,Marcela Kajnakova,Alexander Feher###
(1079359, 1079359)
 Exchange bias (E<missing VAR>B) phenomena have been observed in Nd2/3Ca1/3MnO3 colossalmagnetoresistance perovskite below the Curie temperature T<missing VAR>C  70 K andattributed to an antiferromagnetic (AFM) - ferromagnetic (FM) spontaneous phasesegregated state of this compound.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 70, 'K', 0]

Nd2
###Exchange bias in phase-segregated Nd2/3Ca1/3MnO3 as a function of temperature and cooling magnetic fields|Elena Fertman,Sergiy Dolya,Vladimir Desnenko,Liudmia A. Pozhar,Marcela Kajnakova,Alexander Feher###
(1079372, 1079373)
 Exchange bias (E<missing VAR>B) phenomena have been observed in Nd2/3Ca1/3MnO3 colossalmagnetoresistance perovskite below the Curie temperature T<missing VAR>C  70 K andattributed to an antiferromagnetic (AFM) - ferromagnetic (FM) spontaneous phasesegregated state of this compound.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 70, 'K', 0]

Ca1
###Exchange bias in phase-segregated Nd2/3Ca1/3MnO3 as a function of temperature and cooling magnetic fields|Elena Fertman,Sergiy Dolya,Vladimir Desnenko,Liudmia A. Pozhar,Marcela Kajnakova,Alexander Feher###
(1079376, 1079377)
 Exchange bias (E<missing VAR>B) phenomena have been observed in Nd2/3Ca1/3MnO3 colossalmagnetoresistance perovskite below the Curie temperature T<missing VAR>C  70 K andattributed to an antiferromagnetic (AFM) - ferromagnetic (FM) spontaneous phasesegregated state of this compound.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 70, 'K', 0]

MnO3
###Exchange bias in phase-segregated Nd2/3Ca1/3MnO3 as a function of temperature and cooling magnetic fields|Elena Fertman,Sergiy Dolya,Vladimir Desnenko,Liudmia A. Pozhar,Marcela Kajnakova,Alexander Feher###
(1079380, 1079382)
 Exchange bias (E<missing VAR>B) phenomena have been observed in Nd2/3Ca1/3MnO3 colossalmagnetoresistance perovskite below the Curie temperature T<missing VAR>C  70 K andattributed to an antiferromagnetic (AFM) - ferromagnetic (FM) spontaneous phasesegregated state of this compound.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 70, 'K', 0]

C
###Exchange bias in phase-segregated Nd2/3Ca1/3MnO3 as a function of temperature and cooling magnetic fields|Elena Fertman,Sergiy Dolya,Vladimir Desnenko,Liudmia A. Pozhar,Marcela Kajnakova,Alexander Feher###
(1079400, 1079400)
 Exchange bias (E<missing VAR>B) phenomena have been observed in Nd2/3Ca1/3MnO3 colossalmagnetoresistance perovskite below the Curie temperature T<missing VAR>C  70 K andattributed to an antiferromagnetic (AFM) - ferromagnetic (FM) spontaneous phasesegregated state of this compound.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 70, 'K', 0]

F
###Exchange bias in phase-segregated Nd2/3Ca1/3MnO3 as a function of temperature and cooling magnetic fields|Elena Fertman,Sergiy Dolya,Vladimir Desnenko,Liudmia A. Pozhar,Marcela Kajnakova,Alexander Feher###
(1079417, 1079417)
 Exchange bias (E<missing VAR>B) phenomena have been observed in Nd2/3Ca1/3MnO3 colossalmagnetoresistance perovskite below the Curie temperature T<missing VAR>C  70 K andattributed to an antiferromagnetic (AFM) - ferromagnetic (FM) spontaneous phasesegregated state of this compound.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 70, 'K', 0]

F
###Exchange bias in phase-segregated Nd2/3Ca1/3MnO3 as a function of temperature and cooling magnetic fields|Elena Fertman,Sergiy Dolya,Vladimir Desnenko,Liudmia A. Pozhar,Marcela Kajnakova,Alexander Feher###
(1079426, 1079426)
 Exchange bias (E<missing VAR>B) phenomena have been observed in Nd2/3Ca1/3MnO3 colossalmagnetoresistance perovskite below the Curie temperature T<missing VAR>C  70 K andattributed to an antiferromagnetic (AFM) - ferromagnetic (FM) spontaneous phasesegregated state of this compound.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 70, 'K', 0]

H
###Exchange bias in phase-segregated Nd2/3Ca1/3MnO3 as a function of temperature and cooling magnetic fields|Elena Fertman,Sergiy Dolya,Vladimir Desnenko,Liudmia A. Pozhar,Marcela Kajnakova,Alexander Feher###
(1079489, 1079489)
 The valuesof exchange field HE<missing VAR>B and coercivity HC are found to be stronglydependent of temperature and strength of the cooling magnetic field Hcool.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 70, 'K', 2]

B
###Exchange bias in phase-segregated Nd2/3Ca1/3MnO3 as a function of temperature and cooling magnetic fields|Elena Fertman,Sergiy Dolya,Vladimir Desnenko,Liudmia A. Pozhar,Marcela Kajnakova,Alexander Feher###
(1079491, 1079491)
 The valuesof exchange field HE<missing VAR>B and coercivity HC are found to be stronglydependent of temperature and strength of the cooling magnetic field Hcool.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 70, 'K', 2]

HC
###Exchange bias in phase-segregated Nd2/3Ca1/3MnO3 as a function of temperature and cooling magnetic fields|Elena Fertman,Sergiy Dolya,Vladimir Desnenko,Liudmia A. Pozhar,Marcela Kajnakova,Alexander Feher###
(1079497, 1079498)
 The valuesof exchange field HE<missing VAR>B and coercivity HC are found to be stronglydependent of temperature and strength of the cooling magnetic field Hcool.
Featurization terminated normally.
0.5,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 70, 'K', 2]

H
###Exchange bias in phase-segregated Nd2/3Ca1/3MnO3 as a function of temperature and cooling magnetic fields|Elena Fertman,Sergiy Dolya,Vladimir Desnenko,Liudmia A. Pozhar,Marcela Kajnakova,Alexander Feher###
(1079531, 1079531)
 The valuesof exchange field HE<missing VAR>B and coercivity HC are found to be stronglydependent of temperature and strength of the cooling magnetic field Hcool.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 70, 'K', 2]

F
###Exchange bias in phase-segregated Nd2/3Ca1/3MnO3 as a function of temperature and cooling magnetic fields|Elena Fertman,Sergiy Dolya,Vladimir Desnenko,Liudmia A. Pozhar,Marcela Kajnakova,Alexander Feher###
(1079552, 1079552)
These effects are attributed to evolution of the FM<missing VAR> phase content and a size ofFM<missing VAR> clusters.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 70, 'K', 3]

F
###Exchange bias in phase-segregated Nd2/3Ca1/3MnO3 as a function of temperature and cooling magnetic fields|Elena Fertman,Sergiy Dolya,Vladimir Desnenko,Liudmia A. Pozhar,Marcela Kajnakova,Alexander Feher###
(1079568, 1079568)
These effects are attributed to evolution of the FM<missing VAR> phase content and a size ofFM<missing VAR> clusters.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 70, 'K', 3]

F
###Exchange bias in phase-segregated Nd2/3Ca1/3MnO3 as a function of temperature and cooling magnetic fields|Elena Fertman,Sergiy Dolya,Vladimir Desnenko,Liudmia A. Pozhar,Marcela Kajnakova,Alexander Feher###
(1079599, 1079599)
 A contribution to the total magnetization of the system due to theFM<missing VAR> phase has been evaluated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[197.0, 70, 'K', 4]

C
###Exchange bias in phase-segregated Nd2/3Ca1/3MnO3 as a function of temperature and cooling magnetic fields|Elena Fertman,Sergiy Dolya,Vladimir Desnenko,Liudmia A. Pozhar,Marcela Kajnakova,Alexander Feher###
(1079633, 1079633)
 The exchange bias effect decreases with increasingtemperature up to T<missing VAR>C and vanishes above this temperature withdisappearance of FM<missing VAR> phase.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[231.0, 70, 'K', 5]

F
###Exchange bias in phase-segregated Nd2/3Ca1/3MnO3 as a function of temperature and cooling magnetic fields|Elena Fertman,Sergiy Dolya,Vladimir Desnenko,Liudmia A. Pozhar,Marcela Kajnakova,Alexander Feher###
(1079652, 1079652)
 The exchange bias effect decreases with increasingtemperature up to T<missing VAR>C and vanishes above this temperature withdisappearance of FM<missing VAR> phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[250.0, 70, 'K', 5]

B
###Exchange bias in phase-segregated Nd2/3Ca1/3MnO3 as a function of temperature and cooling magnetic fields|Elena Fertman,Sergiy Dolya,Vladimir Desnenko,Liudmia A. Pozhar,Marcela Kajnakova,Alexander Feher###
(1079701, 1079701)
 Relaxation of a non-equilibrium magnetic state ofthe compound manifests itself through a training effect also observed whilestudying E<missing VAR>B in Nd2/3Ca1/3MnO3.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[299.0, 70, 'K', 6]

Nd2
###Exchange bias in phase-segregated Nd2/3Ca1/3MnO3 as a function of temperature and cooling magnetic fields|Elena Fertman,Sergiy Dolya,Vladimir Desnenko,Liudmia A. Pozhar,Marcela Kajnakova,Alexander Feher###
(1079705, 1079706)
 Relaxation of a non-equilibrium magnetic state ofthe compound manifests itself through a training effect also observed whilestudying E<missing VAR>B in Nd2/3Ca1/3MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[303.0, 70, 'K', 6]

Ca1
###Exchange bias in phase-segregated Nd2/3Ca1/3MnO3 as a function of temperature and cooling magnetic fields|Elena Fertman,Sergiy Dolya,Vladimir Desnenko,Liudmia A. Pozhar,Marcela Kajnakova,Alexander Feher###
(1079709, 1079710)
 Relaxation of a non-equilibrium magnetic state ofthe compound manifests itself through a training effect also observed whilestudying E<missing VAR>B in Nd2/3Ca1/3MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[307.0, 70, 'K', 6]

MnO3
###Exchange bias in phase-segregated Nd2/3Ca1/3MnO3 as a function of temperature and cooling magnetic fields|Elena Fertman,Sergiy Dolya,Vladimir Desnenko,Liudmia A. Pozhar,Marcela Kajnakova,Alexander Feher###
(1079713, 1079715)
 Relaxation of a non-equilibrium magnetic state ofthe compound manifests itself through a training effect also observed whilestudying E<missing VAR>B in Nd2/3Ca1/3MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[311.0, 70, 'K', 6]

(BP)
###Engineering Schottky Barrier in Black Phosphorus field effect devices for spintronic applications|M. Venkata Kamalakar,B. N Madhushankar,André Dankert,Saroj P. Dash###
(1079755, 1079758)
 Black phosphorous (BP) is is recently unveiled as a promising two-dimensionaldirect bandgap semiconducting material.
Featurization successful!
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 50, 'meV', 2],[188.0, 155, 'and', 4],[189.0, 0.18, 'cm', 4]

BP
###Engineering Schottky Barrier in Black Phosphorus field effect devices for spintronic applications|M. Venkata Kamalakar,B. N Madhushankar,André Dankert,Saroj P. Dash###
(1079814, 1079815)
 Here, we report the ambipolar fieldeffect transistor behavior of multilayers of BP with ferromagnetic tunnelcontacts.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 50, 'meV', 1],[131.0, 155, 'and', 3],[132.0, 0.18, 'cm', 3]

TiO2/Co
###Engineering Schottky Barrier in Black Phosphorus field effect devices for spintronic applications|M. Venkata Kamalakar,B. N Madhushankar,André Dankert,Saroj P. Dash###
(1079849, 1079853)
 We observe a reduced of Schottky barrier < 50 meV by usingTiO2/Co contacts, which could be further tuned by gate voltages.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[7.0, 50, 'meV', 0],[93.0, 155, 'and', 2],[94.0, 0.18, 'cm', 2]

BP
###Engineering Schottky Barrier in Black Phosphorus field effect devices for spintronic applications|M. Venkata Kamalakar,B. N Madhushankar,André Dankert,Saroj P. Dash###
(1079892, 1079893)
 Eminentlya good transistor performance is achieved in BP devices, with drain currentmodulation on the order of four to six orders of magnitude.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 50, 'meV', 1],[53.0, 155, 'and', 1],[54.0, 0.18, 'cm', 1]

V
###Engineering Schottky Barrier in Black Phosphorus field effect devices for spintronic applications|M. Venkata Kamalakar,B. N Madhushankar,André Dankert,Saroj P. Dash###
(1079950, 1079950)
 The charge carriermobility is found to be sim 155 and 0.18 cm2 V-1 s<missing VAR>-1 forholes and electrons respectively at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 50, 'meV', 2],[4.0, 155, 'and', 0],[3.0, 0.18, 'cm', 0]

BP
###Engineering Schottky Barrier in Black Phosphorus field effect devices for spintronic applications|M. Venkata Kamalakar,B. N Madhushankar,André Dankert,Saroj P. Dash###
(1079996, 1079997)
 Furthermore,magnetoresistance calculations reveal that the resistances of the BP devicewith applied gate voltages are in the appropriate range for injection anddetection of spin polarized holes.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 50, 'meV', 3],[50.0, 155, 'and', 1],[49.0, 0.18, 'cm', 1]

BP
###Engineering Schottky Barrier in Black Phosphorus field effect devices for spintronic applications|M. Venkata Kamalakar,B. N Madhushankar,André Dankert,Saroj P. Dash###
(1080053, 1080054)
 Our results demonstrate the prospect ofengineering BP nanolayered devices for efficient nanoelectronic and spintronicapplications.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[211.0, 50, 'meV', 4],[107.0, 155, 'and', 2],[106.0, 0.18, 'cm', 2]

Pb
###Anomalous Hall Effect in Ge(1-x-y)Pb(x)Mn(y)Te Composite System|A. Podgórni,L. Kilanski,W. Dobrowolski,M. Górska,V. Domukhovski,B. Brodowska,A. Reszka,B. J. Kowalski,V. E. Slynko,E. I. Slynko###
(1080098, 1080098)
Anomalous Hall Effect in Ge(1-x-y)Pb(x)Mn(y)Te Composite System.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 97.5, 'K', 2],[222.0, 6.6, 'E', 7],[226.0, -3, ',', 7],[243.0, -0.78, 'to', 8],[245.0, 1.18, '%', 8],[304.0, 2.0, 'E', 10]

Mn
###Anomalous Hall Effect in Ge(1-x-y)Pb(x)Mn(y)Te Composite System|A. Podgórni,L. Kilanski,W. Dobrowolski,M. Górska,V. Domukhovski,B. Brodowska,A. Reszka,B. J. Kowalski,V. E. Slynko,E. I. Slynko###
(1080102, 1080102)
Anomalous Hall Effect in Ge(1-x-y)Pb(x)Mn(y)Te Composite System.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 97.5, 'K', 2],[218.0, 6.6, 'E', 7],[222.0, -3, ',', 7],[239.0, -0.78, 'to', 8],[241.0, 1.18, '%', 8],[300.0, 2.0, 'E', 10]

Te
###Anomalous Hall Effect in Ge(1-x-y)Pb(x)Mn(y)Te Composite System|A. Podgórni,L. Kilanski,W. Dobrowolski,M. Górska,V. Domukhovski,B. Brodowska,A. Reszka,B. J. Kowalski,V. E. Slynko,E. I. Slynko###
(1080106, 1080106)
Anomalous Hall Effect in Ge(1-x-y)Pb(x)Mn(y)Te Composite System.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 97.5, 'K', 2],[214.0, 6.6, 'E', 7],[218.0, -3, ',', 7],[235.0, -0.78, 'to', 8],[237.0, 1.18, '%', 8],[296.0, 2.0, 'E', 10]

Te
###Anomalous Hall Effect in Ge(1-x-y)Pb(x)Mn(y)Te Composite System|A. Podgórni,L. Kilanski,W. Dobrowolski,M. Górska,V. Domukhovski,B. Brodowska,A. Reszka,B. J. Kowalski,V. E. Slynko,E. I. Slynko###
(1080152, 1080152)
 The purpose of this study was to investigate the magnetotransport propertiesof the Ge(0.743)Pb(0.183)Mn(0.074)Te mixed crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 97.5, 'K', 1],[168.0, 6.6, 'E', 6],[172.0, -3, ',', 6],[189.0, -0.78, 'to', 7],[191.0, 1.18, '%', 7],[250.0, 2.0, 'E', 9]

K
###Anomalous Hall Effect in Ge(1-x-y)Pb(x)Mn(y)Te Composite System|A. Podgórni,L. Kilanski,W. Dobrowolski,M. Górska,V. Domukhovski,B. Brodowska,A. Reszka,B. J. Kowalski,V. E. Slynko,E. I. Slynko###
(1080262, 1080262)
 Resistivity as a function of temperature has a minimum at30 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 97.5, 'K', 3],[58.0, 6.6, 'E', 2],[62.0, -3, ',', 2],[79.0, -0.78, 'to', 3],[81.0, 1.18, '%', 3],[140.0, 2.0, 'E', 5]

In
###Anomalous Hall Effect in Ge(1-x-y)Pb(x)Mn(y)Te Composite System|A. Podgórni,L. Kilanski,W. Dobrowolski,M. Górska,V. Domukhovski,B. Brodowska,A. Reszka,B. J. Kowalski,V. E. Slynko,E. I. Slynko###
(1080355, 1080355)
 In themagnetotransport measurements we observed the anomalous Hall effect (AHE) withhysteresis loops.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 97.5, 'K', 7],[35.0, 6.6, 'E', 2],[31.0, -3, ',', 2],[14.0, -0.78, 'to', 1],[12.0, 1.18, '%', 1],[47.0, 2.0, 'E', 1]

H
###Anomalous Hall Effect in Ge(1-x-y)Pb(x)Mn(y)Te Composite System|A. Podgórni,L. Kilanski,W. Dobrowolski,M. Górska,V. Domukhovski,B. Brodowska,A. Reszka,B. J. Kowalski,V. E. Slynko,E. I. Slynko###
(1080378, 1080378)
 In themagnetotransport measurements we observed the anomalous Hall effect (AHE) withhysteresis loops.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 97.5, 'K', 7],[58.0, 6.6, 'E', 2],[54.0, -3, ',', 2],[37.0, -0.78, 'to', 1],[35.0, 1.18, '%', 1],[24.0, 2.0, 'E', 1]

H
###Anomalous Hall Effect in Ge(1-x-y)Pb(x)Mn(y)Te Composite System|A. Podgórni,L. Kilanski,W. Dobrowolski,M. Górska,V. Domukhovski,B. Brodowska,A. Reszka,B. J. Kowalski,V. E. Slynko,E. I. Slynko###
(1080393, 1080393)
 Calculated AHE<missing VAR> coefficient, R<missing VAR>S  2.0E6 m<missing VAR>3/C, is temperatureindependent.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 97.5, 'K', 8],[73.0, 6.6, 'E', 3],[69.0, -3, ',', 3],[52.0, -0.78, 'to', 2],[50.0, 1.18, '%', 2],[9.0, 2.0, 'E', 0]

S
###Anomalous Hall Effect in Ge(1-x-y)Pb(x)Mn(y)Te Composite System|A. Podgórni,L. Kilanski,W. Dobrowolski,M. Górska,V. Domukhovski,B. Brodowska,A. Reszka,B. J. Kowalski,V. E. Slynko,E. I. Slynko###
(1080400, 1080400)
 Calculated AHE<missing VAR> coefficient, R<missing VAR>S  2.0E6 m<missing VAR>3/C, is temperatureindependent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[195.0, 97.5, 'K', 8],[80.0, 6.6, 'E', 3],[76.0, -3, ',', 3],[59.0, -0.78, 'to', 2],[57.0, 1.18, '%', 2],[2.0, 2.0, 'E', 0]

C
###Anomalous Hall Effect in Ge(1-x-y)Pb(x)Mn(y)Te Composite System|A. Podgórni,L. Kilanski,W. Dobrowolski,M. Górska,V. Domukhovski,B. Brodowska,A. Reszka,B. J. Kowalski,V. E. Slynko,E. I. Slynko###
(1080408, 1080408)
 Calculated AHE<missing VAR> coefficient, R<missing VAR>S  2.0E6 m<missing VAR>3/C, is temperatureindependent.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[203.0, 97.5, 'K', 8],[88.0, 6.6, 'E', 3],[84.0, -3, ',', 3],[67.0, -0.78, 'to', 2],[65.0, 1.18, '%', 2],[6.0, 2.0, 'E', 0]

H
###Anomalous Hall Effect in Ge(1-x-y)Pb(x)Mn(y)Te Composite System|A. Podgórni,L. Kilanski,W. Dobrowolski,M. Górska,V. Domukhovski,B. Brodowska,A. Reszka,B. J. Kowalski,V. E. Slynko,E. I. Slynko###
(1080453, 1080453)
 The analysis indicates the extrinsic skew scattering mechanism tobe the main physical mechanism responsible for AHE<missing VAR> inGe(0.743)Pb(0.183)Mn(0.074)Te alloy.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[248.0, 97.5, 'K', 9],[133.0, 6.6, 'E', 4],[129.0, -3, ',', 4],[112.0, -0.78, 'to', 3],[110.0, 1.18, '%', 3],[51.0, 2.0, 'E', 1]

Te
###Anomalous Hall Effect in Ge(1-x-y)Pb(x)Mn(y)Te Composite System|A. Podgórni,L. Kilanski,W. Dobrowolski,M. Górska,V. Domukhovski,B. Brodowska,A. Reszka,B. J. Kowalski,V. E. Slynko,E. I. Slynko###
(1080471, 1080471)
 The analysis indicates the extrinsic skew scattering mechanism tobe the main physical mechanism responsible for AHE<missing VAR> inGe(0.743)Pb(0.183)Mn(0.074)Te alloy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[266.0, 97.5, 'K', 9],[151.0, 6.6, 'E', 4],[147.0, -3, ',', 4],[130.0, -0.78, 'to', 3],[128.0, 1.18, '%', 3],[69.0, 2.0, 'E', 1]

N
###Enhanced Tunnel Spin Injection into Graphene using Chemical Vapor Deposited Hexagonal Boron Nitride|M. Venkata Kamalakar,André Dankert,Johan Bergsten,Tommy Ive,Saroj P. Dash###
(1080574, 1080574)
 Hybrid devices of graphene withinsulating 2D hexagonal boron nitride (h<missing VAR>-BN) have emerged as promisingnanoelectronic architectures through demonstrations of ultrahigh electronmotilities and charge-based tunnel transistors.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 2, 'D', 0],[57.0, 2, 'D', 1],[224.0, 0.46, 'nanosecond', 4]

CV
###Enhanced Tunnel Spin Injection into Graphene using Chemical Vapor Deposited Hexagonal Boron Nitride|M. Venkata Kamalakar,André Dankert,Johan Bergsten,Tommy Ive,Saroj P. Dash###
(1080660, 1080661)
 Here, we expand the functionalhorizon of such 2D materials demonstrating the quantum tunneling ofspin-polarized electrons through atomic planes of CVD<missing VAR> grown h<missing VAR>-BN.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 2, 'D', 1],[29.0, 2, 'D', 0],[137.0, 0.46, 'nanosecond', 3]

BN
###Enhanced Tunnel Spin Injection into Graphene using Chemical Vapor Deposited Hexagonal Boron Nitride|M. Venkata Kamalakar,André Dankert,Johan Bergsten,Tommy Ive,Saroj P. Dash###
(1080668, 1080669)
 Here, we expand the functionalhorizon of such 2D materials demonstrating the quantum tunneling ofspin-polarized electrons through atomic planes of CVD<missing VAR> grown h<missing VAR>-BN.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 2, 'D', 1],[37.0, 2, 'D', 0],[129.0, 0.46, 'nanosecond', 3]

BN
###Enhanced Tunnel Spin Injection into Graphene using Chemical Vapor Deposited Hexagonal Boron Nitride|M. Venkata Kamalakar,André Dankert,Johan Bergsten,Tommy Ive,Saroj P. Dash###
(1080687, 1080688)
 We reportexcellent tunneling behavior of h<missing VAR>-BN layers together with tunnel spin injectionand transport in graphene using ferromagnet/h<missing VAR>-BN contacts.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 2, 'D', 2],[56.0, 2, 'D', 1],[110.0, 0.46, 'nanosecond', 2]

BN
###Enhanced Tunnel Spin Injection into Graphene using Chemical Vapor Deposited Hexagonal Boron Nitride|M. Venkata Kamalakar,André Dankert,Johan Bergsten,Tommy Ive,Saroj P. Dash###
(1080717, 1080718)
 We reportexcellent tunneling behavior of h<missing VAR>-BN layers together with tunnel spin injectionand transport in graphene using ferromagnet/h<missing VAR>-BN contacts.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 2, 'D', 2],[86.0, 2, 'D', 1],[80.0, 0.46, 'nanosecond', 2]

BN
###Enhanced Tunnel Spin Injection into Graphene using Chemical Vapor Deposited Hexagonal Boron Nitride|M. Venkata Kamalakar,André Dankert,Johan Bergsten,Tommy Ive,Saroj P. Dash###
(1080727, 1080728)
 Employing h<missing VAR>-BNtunnel contacts, we observe enhancements in both spin signal amplitude andlifetime by an order of magnitude.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 2, 'D', 3],[96.0, 2, 'D', 2],[70.0, 0.46, 'nanosecond', 1]

CV
###Enhanced Tunnel Spin Injection into Graphene using Chemical Vapor Deposited Hexagonal Boron Nitride|M. Venkata Kamalakar,André Dankert,Johan Bergsten,Tommy Ive,Saroj P. Dash###
(1080818, 1080819)
 Ourresults and complementary magnetoresistance calculations illustrate that CVD<missing VAR>h<missing VAR>-BN tunnel barrier provides a reliable, reproducible and alternative approachto address the conductivity mismatch problem for spin injection into graphene.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[256.0, 2, 'D', 5],[187.0, 2, 'D', 4],[20.0, 0.46, 'nanosecond', 1]

BN
###Enhanced Tunnel Spin Injection into Graphene using Chemical Vapor Deposited Hexagonal Boron Nitride|M. Venkata Kamalakar,André Dankert,Johan Bergsten,Tommy Ive,Saroj P. Dash###
(1080825, 1080826)
 Ourresults and complementary magnetoresistance calculations illustrate that CVD<missing VAR>h<missing VAR>-BN tunnel barrier provides a reliable, reproducible and alternative approachto address the conductivity mismatch problem for spin injection into graphene.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[263.0, 2, 'D', 5],[194.0, 2, 'D', 4],[27.0, 0.46, 'nanosecond', 1]

In
###Tuning the metal-insulator transition in manganite films through surface exchange coupling with magnetic nanodots|T. Z. Ward,Z. Gai,X. Y. Xu,H. W. Guo,L. F. Yin,J. Shen###
(1080910, 1080910)
 In strongly correlated electronic systems, such as manganites, the globaltransport behavior depends sensitively on the spin ordering, whose alterationoften requires a large external magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[184.0, 200, 'K', 2],[197.0, 5000, '%', 2]

Ni44Cu2Mn43In11
###Origin of giant magnetoresistance across the martensitic transformation for Ni44Cu2Mn43In11 alloy: Formation of phase fraction|Mayukh K. Ray,Bibekananda Maji,M. Modak,K. Bagani,S. Banerjee###
(1081210, 1081217)
Origin of giant magnetoresistance across the martensitic transformation for Ni44Cu2Mn43In11 alloy Formation of phase fraction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.43,0,0,0.44,0.02,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.11,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni44Cu2Mn43In11
###Origin of giant magnetoresistance across the martensitic transformation for Ni44Cu2Mn43In11 alloy: Formation of phase fraction|Mayukh K. Ray,Bibekananda Maji,M. Modak,K. Bagani,S. Banerjee###
(1081273, 1081280)
 We have studied the phase volume fraction related magnetoresistance (MR)across the first order martensite transformation (MT) of Ni44Cu2Mn43In11 alloy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.43,0,0,0.44,0.02,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.11,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Origin of giant magnetoresistance across the martensitic transformation for Ni44Cu2Mn43In11 alloy: Formation of phase fraction|Mayukh K. Ray,Bibekananda Maji,M. Modak,K. Bagani,S. Banerjee###
(1081337, 1081337)
 The field induced austenite phasefraction (f<missing VAR>IA) at any temperature depends on the availability and instabilityof martensite phase fraction (fM ) at that temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Origin of giant magnetoresistance across the martensitic transformation for Ni44Cu2Mn43In11 alloy: Formation of phase fraction|Mayukh K. Ray,Bibekananda Maji,M. Modak,K. Bagani,S. Banerjee###
(1081384, 1081384)
 This f<missing VAR>IA is found tocontribute most significantly to the observed giant MR while the contributionfrom pure martensite and austenite phase fraction is negligible.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Origin of giant magnetoresistance across the martensitic transformation for Ni44Cu2Mn43In11 alloy: Formation of phase fraction|Mayukh K. Ray,Bibekananda Maji,M. Modak,K. Bagani,S. Banerjee###
(1081470, 1081470)
 It is foundthat the net MR follows a non linear proportional relation with the f<missing VAR>IA and theascending and descending branch of f<missing VAR>IA follows different power law giving riseto hysteresis in MR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Origin of giant magnetoresistance across the martensitic transformation for Ni44Cu2Mn43In11 alloy: Formation of phase fraction|Mayukh K. Ray,Bibekananda Maji,M. Modak,K. Bagani,S. Banerjee###
(1081489, 1081489)
 It is foundthat the net MR follows a non linear proportional relation with the f<missing VAR>IA and theascending and descending branch of f<missing VAR>IA follows different power law giving riseto hysteresis in MR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi/Ag
###Interface-driven spin-torque ferromagnetic resonance by Rashba coupling at the interface between non-magnetic materials|M. B. Jungfleisch,W. Zhang,J. Sklenar,W. Jiang,J. E. Pearson,J. B. Ketterson,A. Hoffmann###
(1081705, 1081707)
 Here, we demonstrate that a Bi/Ag Rashbainterface can even drive an adjacent ferromagnet to resonance.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

In
###Interface-driven spin-torque ferromagnetic resonance by Rashba coupling at the interface between non-magnetic materials|M. B. Jungfleisch,W. Zhang,J. Sklenar,W. Jiang,J. E. Pearson,J. B. Ketterson,A. Hoffmann###
(1081783, 1081783)
 Inour experiment, the direct Rashba-Edelstein effect generates an oscillatingspin current from an alternating charge current driving the magnetizationprecession in a neighboring permalloy (Py, Ni80Fe20) layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe20
###Interface-driven spin-torque ferromagnetic resonance by Rashba coupling at the interface between non-magnetic materials|M. B. Jungfleisch,W. Zhang,J. Sklenar,W. Jiang,J. E. Pearson,J. B. Ketterson,A. Hoffmann###
(1081845, 1081846)
 Inour experiment, the direct Rashba-Edelstein effect generates an oscillatingspin current from an alternating charge current driving the magnetizationprecession in a neighboring permalloy (Py, Ni80Fe20) layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi
###Anomalous Lattice Dynamics of Mono-, Bi-, and Tri-layer WTe2|Younghee Kim,Young In Jhon,June Park,Jae Hun Kim,Seok Lee,Young Min Jhon###
(1081922, 1081922)
Anomalous Lattice Dynamics of Mono-, Bi-, and Tri-layer WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Anomalous Lattice Dynamics of Mono-, Bi-, and Tri-layer WTe2|Younghee Kim,Young In Jhon,June Park,Jae Hun Kim,Seok Lee,Young Min Jhon###
(1081932, 1081934)
Anomalous Lattice Dynamics of Mono-, Bi-, and Tri-layer WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(WTe2)
###Anomalous Lattice Dynamics of Mono-, Bi-, and Tri-layer WTe2|Younghee Kim,Young In Jhon,June Park,Jae Hun Kim,Seok Lee,Young Min Jhon###
(1081941, 1081945)
 Tungsten ditelluride (WTe2) is a layered material that exhibits excellentmagnetoresistance and thermoelectric behaviors, which are deeply related withits distorted orthorhombic phase that may critically affect the latticedynamics.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Anomalous Lattice Dynamics of Mono-, Bi-, and Tri-layer WTe2|Younghee Kim,Young In Jhon,June Park,Jae Hun Kim,Seok Lee,Young Min Jhon###
(1082039, 1082041)
 Here, for the first time, we present comprehensive characterizationof the Raman spectroscopic behavior of WTe2 from bulk to monolayer usingexperimental and computational methods.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Anomalous Lattice Dynamics of Mono-, Bi-, and Tri-layer WTe2|Younghee Kim,Young In Jhon,June Park,Jae Hun Kim,Seok Lee,Young Min Jhon###
(1082077, 1082079)
 We discover that mono and bi-layer WTe2can be easily identified by Raman spectroscopy since double or single Ramanmodes that are observed in higher-layer WTe2 are substantially suppressed inthe monolayer and bilayer WTe2, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Anomalous Lattice Dynamics of Mono-, Bi-, and Tri-layer WTe2|Younghee Kim,Young In Jhon,June Park,Jae Hun Kim,Seok Lee,Young Min Jhon###
(1082121, 1082123)
 We discover that mono and bi-layer WTe2can be easily identified by Raman spectroscopy since double or single Ramanmodes that are observed in higher-layer WTe2 are substantially suppressed inthe monolayer and bilayer WTe2, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Anomalous Lattice Dynamics of Mono-, Bi-, and Tri-layer WTe2|Younghee Kim,Young In Jhon,June Park,Jae Hun Kim,Seok Lee,Young Min Jhon###
(1082142, 1082144)
 We discover that mono and bi-layer WTe2can be easily identified by Raman spectroscopy since double or single Ramanmodes that are observed in higher-layer WTe2 are substantially suppressed inthe monolayer and bilayer WTe2, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Anomalous Lattice Dynamics of Mono-, Bi-, and Tri-layer WTe2|Younghee Kim,Young In Jhon,June Park,Jae Hun Kim,Seok Lee,Young Min Jhon###
(1082150, 1082150)
 In addition, different fromhexagonal metal dichalcogenides, the frequency of in-plane mode of WTe2 remainsalmost constant as the layer number decreases, while the other Raman modesconsistently blueshift.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Anomalous Lattice Dynamics of Mono-, Bi-, and Tri-layer WTe2|Younghee Kim,Young In Jhon,June Park,Jae Hun Kim,Seok Lee,Young Min Jhon###
(1082181, 1082183)
 In addition, different fromhexagonal metal dichalcogenides, the frequency of in-plane mode of WTe2 remainsalmost constant as the layer number decreases, while the other Raman modesconsistently blueshift.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Anomalous Lattice Dynamics of Mono-, Bi-, and Tri-layer WTe2|Younghee Kim,Young In Jhon,June Park,Jae Hun Kim,Seok Lee,Young Min Jhon###
(1082275, 1082277)
 First-principles calculation validates the experimentsand reveals that the negligible shift of the mode is attributed to the latticevibration along the tungsten chains that make WTe2 structurallyone-dimensional.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrIrO3
###Emergence of non-Fermi liquid behaviors in 5d perovskite SrIrO3 thin films: interplay between correlation, disorder, and spin-orbit coupling|Abhijit Biswas,Ki-Seok Kim,Yoon H. Jeong###
(1082312, 1082315)
Emergence of non-Fermi liquid behaviors in 5d perovskite SrIrO3 thin films interplay between correlation, disorder, and spin-orbit coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 5, 'd', 0],[49.0, 5, 'd', 1],[74.0, 35, 'nm', 1],[164.0, 1, 'and', 2],[277.0, 5, 'd', 4]

SrIrO3
###Emergence of non-Fermi liquid behaviors in 5d perovskite SrIrO3 thin films: interplay between correlation, disorder, and spin-orbit coupling|Abhijit Biswas,Ki-Seok Kim,Yoon H. Jeong###
(1082372, 1082375)
 We investigate the effects of compressive strain on the electricalresistivity of 5d iridium based perovskite SrIrO3 by depositing epitaxial filmsof thickness 35 nm on various substrates such as GdScO3 (110), DyScO3 (110),and SrTiO3 (001).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 5, 'd', 1],[8.0, 5, 'd', 0],[14.0, 35, 'nm', 0],[104.0, 1, 'and', 1],[217.0, 5, 'd', 3]

GdScO3
###Emergence of non-Fermi liquid behaviors in 5d perovskite SrIrO3 thin films: interplay between correlation, disorder, and spin-orbit coupling|Abhijit Biswas,Ki-Seok Kim,Yoon H. Jeong###
(1082401, 1082404)
 We investigate the effects of compressive strain on the electricalresistivity of 5d iridium based perovskite SrIrO3 by depositing epitaxial filmsof thickness 35 nm on various substrates such as GdScO3 (110), DyScO3 (110),and SrTiO3 (001).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 5, 'd', 1],[37.0, 5, 'd', 0],[12.0, 35, 'nm', 0],[75.0, 1, 'and', 1],[188.0, 5, 'd', 3]

DyScO3
###Emergence of non-Fermi liquid behaviors in 5d perovskite SrIrO3 thin films: interplay between correlation, disorder, and spin-orbit coupling|Abhijit Biswas,Ki-Seok Kim,Yoon H. Jeong###
(1082411, 1082414)
 We investigate the effects of compressive strain on the electricalresistivity of 5d iridium based perovskite SrIrO3 by depositing epitaxial filmsof thickness 35 nm on various substrates such as GdScO3 (110), DyScO3 (110),and SrTiO3 (001).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 5, 'd', 1],[47.0, 5, 'd', 0],[22.0, 35, 'nm', 0],[65.0, 1, 'and', 1],[178.0, 5, 'd', 3]

SrTiO3
###Emergence of non-Fermi liquid behaviors in 5d perovskite SrIrO3 thin films: interplay between correlation, disorder, and spin-orbit coupling|Abhijit Biswas,Ki-Seok Kim,Yoon H. Jeong###
(1082424, 1082427)
 We investigate the effects of compressive strain on the electricalresistivity of 5d iridium based perovskite SrIrO3 by depositing epitaxial filmsof thickness 35 nm on various substrates such as GdScO3 (110), DyScO3 (110),and SrTiO3 (001).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 5, 'd', 1],[60.0, 5, 'd', 0],[35.0, 35, 'nm', 0],[52.0, 1, 'and', 1],[165.0, 5, 'd', 3]

SrIrO3
###Emergence of non-Fermi liquid behaviors in 5d perovskite SrIrO3 thin films: interplay between correlation, disorder, and spin-orbit coupling|Abhijit Biswas,Ki-Seok Kim,Yoon H. Jeong###
(1082596, 1082599)
 These observations imply that thedelicate interplay between correlation and disorder in the presence of strongspin-orbit coupling is responsible for the emergence of the non-Fermi liquidbehaviors in 5d perovskite SrIrO3 thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[288.0, 5, 'd', 4],[232.0, 5, 'd', 3],[207.0, 35, 'nm', 3],[117.0, 1, 'and', 2],[4.0, 5, 'd', 0]

FeSe
###Emergence of an incipient ordering mode in FeSe|Sahana Rößler,Cevriye Koz,Lin Jiao,Ulrich K. Rößler,Frank Steglich,Ulrich Schwarz,Steffen Wirth###
(1082654, 1082655)
Emergence of an incipient ordering mode in FeSe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 8.5, 'K', 1],[136.0, 75, 'K', 3],[190.0, 30, 'K', 3],[213.0, 8, 'meV', 3]

Fe
###Emergence of an incipient ordering mode in FeSe|Sahana Rößler,Cevriye Koz,Lin Jiao,Ulrich K. Rößler,Frank Steglich,Ulrich Schwarz,Steffen Wirth###
(1082664, 1082664)
 The structurally simplest Fe-based superconductor FeSe with a criticaltemperature Tcapprox 8.5 K displays a breaking of the four-foldrotational symmetry at a temperature Tsapprox 87 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 8.5, 'K', 0],[127.0, 75, 'K', 2],[181.0, 30, 'K', 2],[204.0, 8, 'meV', 2]

FeSe
###Emergence of an incipient ordering mode in FeSe|Sahana Rößler,Cevriye Koz,Lin Jiao,Ulrich K. Rößler,Frank Steglich,Ulrich Schwarz,Steffen Wirth###
(1082670, 1082671)
 The structurally simplest Fe-based superconductor FeSe with a criticaltemperature Tcapprox 8.5 K displays a breaking of the four-foldrotational symmetry at a temperature Tsapprox 87 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 8.5, 'K', 0],[120.0, 75, 'K', 2],[174.0, 30, 'K', 2],[197.0, 8, 'meV', 2]

K
###Emergence of an incipient ordering mode in FeSe|Sahana Rößler,Cevriye Koz,Lin Jiao,Ulrich K. Rößler,Frank Steglich,Ulrich Schwarz,Steffen Wirth###
(1082718, 1082718)
 The structurally simplest Fe-based superconductor FeSe with a criticaltemperature Tcapprox 8.5 K displays a breaking of the four-foldrotational symmetry at a temperature Tsapprox 87 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 8.5, 'K', 0],[73.0, 75, 'K', 2],[127.0, 30, 'K', 2],[150.0, 8, 'meV', 2]

FeSe
###Emergence of an incipient ordering mode in FeSe|Sahana Rößler,Cevriye Koz,Lin Jiao,Ulrich K. Rößler,Frank Steglich,Ulrich Schwarz,Steffen Wirth###
(1082734, 1082735)
 We investigated theelectronic properties of FeSe using scanning tunneling microscopy/spectroscopy(STM/S), magnetization, and electrical transport measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 8.5, 'K', 1],[56.0, 75, 'K', 1],[110.0, 30, 'K', 1],[133.0, 8, 'meV', 1]

S
###Emergence of an incipient ordering mode in FeSe|Sahana Rößler,Cevriye Koz,Lin Jiao,Ulrich K. Rößler,Frank Steglich,Ulrich Schwarz,Steffen Wirth###
(1082749, 1082749)
 We investigated theelectronic properties of FeSe using scanning tunneling microscopy/spectroscopy(STM/S), magnetization, and electrical transport measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 8.5, 'K', 1],[42.0, 75, 'K', 1],[96.0, 30, 'K', 1],[119.0, 8, 'meV', 1]

S
###Emergence of an incipient ordering mode in FeSe|Sahana Rößler,Cevriye Koz,Lin Jiao,Ulrich K. Rößler,Frank Steglich,Ulrich Schwarz,Steffen Wirth###
(1082753, 1082753)
 We investigated theelectronic properties of FeSe using scanning tunneling microscopy/spectroscopy(STM/S), magnetization, and electrical transport measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 8.5, 'K', 1],[38.0, 75, 'K', 1],[92.0, 30, 'K', 1],[115.0, 8, 'meV', 1]

S
###Emergence of an incipient ordering mode in FeSe|Sahana Rößler,Cevriye Koz,Lin Jiao,Ulrich K. Rößler,Frank Steglich,Ulrich Schwarz,Steffen Wirth###
(1082812, 1082812)
 The resultsindicated two new energy scales (i) T<missing VAR> approx 75 K denoted by an onset ofelectron-hole asymmetry in ST<missing VAR>S, enhanced spin fluctuations, and increasedpositive magnetoresistance; (ii) T<missing VAR> approx 22 - 30 K, marked by openingup of a partial gap of about 8 meV in ST<missing VAR>S and a recovery of Kohlers<missing VAR> rule.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 8.5, 'K', 2],[21.0, 75, 'K', 0],[33.0, 30, 'K', 0],[56.0, 8, 'meV', 0]

S
###Emergence of an incipient ordering mode in FeSe|Sahana Rößler,Cevriye Koz,Lin Jiao,Ulrich K. Rößler,Frank Steglich,Ulrich Schwarz,Steffen Wirth###
(1082814, 1082814)
 The resultsindicated two new energy scales (i) T<missing VAR> approx 75 K denoted by an onset ofelectron-hole asymmetry in ST<missing VAR>S, enhanced spin fluctuations, and increasedpositive magnetoresistance; (ii) T<missing VAR> approx 22 - 30 K, marked by openingup of a partial gap of about 8 meV in ST<missing VAR>S and a recovery of Kohlers<missing VAR> rule.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 8.5, 'K', 2],[23.0, 75, 'K', 0],[31.0, 30, 'K', 0],[54.0, 8, 'meV', 0]

S
###Emergence of an incipient ordering mode in FeSe|Sahana Rößler,Cevriye Koz,Lin Jiao,Ulrich K. Rößler,Frank Steglich,Ulrich Schwarz,Steffen Wirth###
(1082872, 1082872)
 The resultsindicated two new energy scales (i) T<missing VAR> approx 75 K denoted by an onset ofelectron-hole asymmetry in ST<missing VAR>S, enhanced spin fluctuations, and increasedpositive magnetoresistance; (ii) T<missing VAR> approx 22 - 30 K, marked by openingup of a partial gap of about 8 meV in ST<missing VAR>S and a recovery of Kohlers<missing VAR> rule.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[187.0, 8.5, 'K', 2],[81.0, 75, 'K', 0],[27.0, 30, 'K', 0],[4.0, 8, 'meV', 0]

S
###Emergence of an incipient ordering mode in FeSe|Sahana Rößler,Cevriye Koz,Lin Jiao,Ulrich K. Rößler,Frank Steglich,Ulrich Schwarz,Steffen Wirth###
(1082874, 1082874)
 The resultsindicated two new energy scales (i) T<missing VAR> approx 75 K denoted by an onset ofelectron-hole asymmetry in ST<missing VAR>S, enhanced spin fluctuations, and increasedpositive magnetoresistance; (ii) T<missing VAR> approx 22 - 30 K, marked by openingup of a partial gap of about 8 meV in ST<missing VAR>S and a recovery of Kohlers<missing VAR> rule.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[189.0, 8.5, 'K', 2],[83.0, 75, 'K', 0],[29.0, 30, 'K', 0],[6.0, 8, 'meV', 0]

Y2Ir2O7
###Nonequilibrium low temperature phase in pyrochlore iridate Y$_2$Ir$_2$O$_7$: Possibility of glass-like dynamics|Harish Kumar,A. K. Pramanik###
(1083007, 1083012)
Nonequilibrium low temperature phase in pyrochlore iridate Y2Ir2O7 Possibility of glass-like dynamics.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6363636363636364,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 160, 'K', 3]

Y2Ir2O7
###Nonequilibrium low temperature phase in pyrochlore iridate Y$_2$Ir$_2$O$_7$: Possibility of glass-like dynamics|Harish Kumar,A. K. Pramanik###
(1083097, 1083102)
 Here we haveinvestigated detailed structural, magnetic, thermodynamic and transportproperties of pyrochlore iridate Y2Ir2O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6363636363636364,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 160, 'K', 1]

CoFeB/MgO
###Correlation between the spin Hall angle and the structural phases of early 5d transition metals|Jun Liu,Tadakatsu Ohkubo,Seiji Mitani,Kazuhiro Hono,Masamitsu Hayashi###
(1083426, 1083431)
 We have studied the relationship between the structure and the spin Hallangle of the early 5d transition metals in X<missing VAR>/CoFeB/MgO (X<missing VAR>Hf, Ta, W, Re)heterostructures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[49.0, 5, 'd', 1],[10.0, 5, 'd', 0],[188.0, 0.11, ',', 4],[191.0, 0.1, ',', 4],[193.0, 0.23, 'and', 4],[195.0, 0.07, ',', 4]

Hf
###Correlation between the spin Hall angle and the structural phases of early 5d transition metals|Jun Liu,Tadakatsu Ohkubo,Seiji Mitani,Kazuhiro Hono,Masamitsu Hayashi###
(1083435, 1083435)
 We have studied the relationship between the structure and the spin Hallangle of the early 5d transition metals in X<missing VAR>/CoFeB/MgO (X<missing VAR>Hf, Ta, W, Re)heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 5, 'd', 1],[19.0, 5, 'd', 0],[184.0, 0.11, ',', 4],[187.0, 0.1, ',', 4],[189.0, 0.23, 'and', 4],[191.0, 0.07, ',', 4]

Ta
###Correlation between the spin Hall angle and the structural phases of early 5d transition metals|Jun Liu,Tadakatsu Ohkubo,Seiji Mitani,Kazuhiro Hono,Masamitsu Hayashi###
(1083438, 1083438)
 We have studied the relationship between the structure and the spin Hallangle of the early 5d transition metals in X<missing VAR>/CoFeB/MgO (X<missing VAR>Hf, Ta, W, Re)heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 5, 'd', 1],[22.0, 5, 'd', 0],[181.0, 0.11, ',', 4],[184.0, 0.1, ',', 4],[186.0, 0.23, 'and', 4],[188.0, 0.07, ',', 4]

W
###Correlation between the spin Hall angle and the structural phases of early 5d transition metals|Jun Liu,Tadakatsu Ohkubo,Seiji Mitani,Kazuhiro Hono,Masamitsu Hayashi###
(1083441, 1083441)
 We have studied the relationship between the structure and the spin Hallangle of the early 5d transition metals in X<missing VAR>/CoFeB/MgO (X<missing VAR>Hf, Ta, W, Re)heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 5, 'd', 1],[25.0, 5, 'd', 0],[178.0, 0.11, ',', 4],[181.0, 0.1, ',', 4],[183.0, 0.23, 'and', 4],[185.0, 0.07, ',', 4]

Re
###Correlation between the spin Hall angle and the structural phases of early 5d transition metals|Jun Liu,Tadakatsu Ohkubo,Seiji Mitani,Kazuhiro Hono,Masamitsu Hayashi###
(1083444, 1083444)
 We have studied the relationship between the structure and the spin Hallangle of the early 5d transition metals in X<missing VAR>/CoFeB/MgO (X<missing VAR>Hf, Ta, W, Re)heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 5, 'd', 1],[28.0, 5, 'd', 0],[175.0, 0.11, ',', 4],[178.0, 0.1, ',', 4],[180.0, 0.23, 'and', 4],[182.0, 0.07, ',', 4]

S
###Correlation between the spin Hall angle and the structural phases of early 5d transition metals|Jun Liu,Tadakatsu Ohkubo,Seiji Mitani,Kazuhiro Hono,Masamitsu Hayashi###
(1083458, 1083458)
 Spin Hall magnetoresistance (SMR) is used to characterize thespin Hall angle of the heavy metals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 5, 'd', 2],[42.0, 5, 'd', 1],[161.0, 0.11, ',', 3],[164.0, 0.1, ',', 3],[166.0, 0.23, 'and', 3],[168.0, 0.07, ',', 3]

S
###Correlation between the spin Hall angle and the structural phases of early 5d transition metals|Jun Liu,Tadakatsu Ohkubo,Seiji Mitani,Kazuhiro Hono,Masamitsu Hayashi###
(1083573, 1083573)
 We find that the heavy metal layer thickness dependence of the SMRreflects these changes in structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[196.0, 5, 'd', 4],[157.0, 5, 'd', 3],[46.0, 0.11, ',', 1],[49.0, 0.1, ',', 1],[51.0, 0.23, 'and', 1],[53.0, 0.07, ',', 1]

SH
###Correlation between the spin Hall angle and the structural phases of early 5d transition metals|Jun Liu,Tadakatsu Ohkubo,Seiji Mitani,Kazuhiro Hono,Masamitsu Hayashi###
(1083601, 1083602)
 The spin Hall angle largestthetaSH of Hf, Ta, W and Re (0.11, 0.10, 0.23 and 0.07, respectively)is found when the dominant phase is amorphous-like.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[224.0, 5, 'd', 5],[185.0, 5, 'd', 4],[17.0, 0.11, ',', 0],[20.0, 0.1, ',', 0],[22.0, 0.23, 'and', 0],[24.0, 0.07, ',', 0]

Hf
###Correlation between the spin Hall angle and the structural phases of early 5d transition metals|Jun Liu,Tadakatsu Ohkubo,Seiji Mitani,Kazuhiro Hono,Masamitsu Hayashi###
(1083606, 1083606)
 The spin Hall angle largestthetaSH of Hf, Ta, W and Re (0.11, 0.10, 0.23 and 0.07, respectively)is found when the dominant phase is amorphous-like.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[229.0, 5, 'd', 5],[190.0, 5, 'd', 4],[13.0, 0.11, ',', 0],[16.0, 0.1, ',', 0],[18.0, 0.23, 'and', 0],[20.0, 0.07, ',', 0]

Ta
###Correlation between the spin Hall angle and the structural phases of early 5d transition metals|Jun Liu,Tadakatsu Ohkubo,Seiji Mitani,Kazuhiro Hono,Masamitsu Hayashi###
(1083609, 1083609)
 The spin Hall angle largestthetaSH of Hf, Ta, W and Re (0.11, 0.10, 0.23 and 0.07, respectively)is found when the dominant phase is amorphous-like.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[232.0, 5, 'd', 5],[193.0, 5, 'd', 4],[10.0, 0.11, ',', 0],[13.0, 0.1, ',', 0],[15.0, 0.23, 'and', 0],[17.0, 0.07, ',', 0]

W
###Correlation between the spin Hall angle and the structural phases of early 5d transition metals|Jun Liu,Tadakatsu Ohkubo,Seiji Mitani,Kazuhiro Hono,Masamitsu Hayashi###
(1083612, 1083612)
 The spin Hall angle largestthetaSH of Hf, Ta, W and Re (0.11, 0.10, 0.23 and 0.07, respectively)is found when the dominant phase is amorphous-like.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[235.0, 5, 'd', 5],[196.0, 5, 'd', 4],[7.0, 0.11, ',', 0],[10.0, 0.1, ',', 0],[12.0, 0.23, 'and', 0],[14.0, 0.07, ',', 0]

Re
###Correlation between the spin Hall angle and the structural phases of early 5d transition metals|Jun Liu,Tadakatsu Ohkubo,Seiji Mitani,Kazuhiro Hono,Masamitsu Hayashi###
(1083616, 1083616)
 The spin Hall angle largestthetaSH of Hf, Ta, W and Re (0.11, 0.10, 0.23 and 0.07, respectively)is found when the dominant phase is amorphous-like.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[239.0, 5, 'd', 5],[200.0, 5, 'd', 4],[3.0, 0.11, ',', 0],[6.0, 0.1, ',', 0],[8.0, 0.23, 'and', 0],[10.0, 0.07, ',', 0]

NbP
###Quantum oscillations and the Fermi-surface topology of the Weyl semimetal NbP|J. Klotz,Shu-Chun Wu,Chandra Shekhar,Yan Sun,Marcus Schmidt,Michael Nicklas,Michael Baenitz,M. Uhlarz,J. Wosnitza,Claudia Felser,Binghai Yan###
(1083749, 1083750)
Quantum oscillations and the Fermi-surface topology of the Weyl semimetal NbP.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 3, 'D', 2],[220.0, 5, 'meV', 5]

NbP
###Quantum oscillations and the Fermi-surface topology of the Weyl semimetal NbP|J. Klotz,Shu-Chun Wu,Chandra Shekhar,Yan Sun,Marcus Schmidt,Michael Nicklas,Michael Baenitz,M. Uhlarz,J. Wosnitza,Claudia Felser,Binghai Yan###
(1083759, 1083760)
 The Weyl semimetal NbP was found to exhibit topological Fermi arcs and exoticmagneto-transport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 3, 'D', 1],[210.0, 5, 'meV', 4]

NbP
###Quantum oscillations and the Fermi-surface topology of the Weyl semimetal NbP|J. Klotz,Shu-Chun Wu,Chandra Shekhar,Yan Sun,Marcus Schmidt,Michael Nicklas,Michael Baenitz,M. Uhlarz,J. Wosnitza,Claudia Felser,Binghai Yan###
(1083808, 1083809)
 Here, we report on magnetic quantum-oscillationmeasurements on NbP and construct the 3D Fermi surface with the help ofband-structure calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 3, 'D', 0],[161.0, 5, 'meV', 3]

NbP
###Quantum oscillations and the Fermi-surface topology of the Weyl semimetal NbP|J. Klotz,Shu-Chun Wu,Chandra Shekhar,Yan Sun,Marcus Schmidt,Michael Nicklas,Michael Baenitz,M. Uhlarz,J. Wosnitza,Claudia Felser,Binghai Yan###
(1084007, 1084008)
 Therefore, we predict that thechiral anomaly effect can be realized in NbP by electron doping to drive theFermi energy to the Weyl points.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[191.0, 3, 'D', 4],[37.0, 5, 'meV', 1]

MoS2
###Spin transport in molybdenum disulfide multilayer channel|S. H. Liang,Y. Lu,B. S. Tao,S. Mc-Murtry,G. Wang,X. Marie,P. Renucci,H. Jaffrès,F. Montaigne,D. Lacour,J. -M. George,S. Petit-Watelot,M. Hehn,A. Djeffal,S. Mangin###
(1084119, 1084121)
 However, demonstrating spin-transport through a semiconductingMoS2 channel is challenging.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 1, '%', 2],[73.0, 450, 'nm', 2]

MoS2
###Spin transport in molybdenum disulfide multilayer channel|S. H. Liang,Y. Lu,B. S. Tao,S. Mc-Murtry,G. Wang,X. Marie,P. Renucci,H. Jaffrès,F. Montaigne,D. Lacour,J. -M. George,S. Petit-Watelot,M. Hehn,A. Djeffal,S. Mangin###
(1084155, 1084157)
 Here we demonstrate the electrical spin injectionand detection in a multilayer MoS2 semiconducting channel.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 1, '%', 1],[37.0, 450, 'nm', 1]

Co/MgO
###Spin transport in molybdenum disulfide multilayer channel|S. H. Liang,Y. Lu,B. S. Tao,S. Mc-Murtry,G. Wang,X. Marie,P. Renucci,H. Jaffrès,F. Montaigne,D. Lacour,J. -M. George,S. Petit-Watelot,M. Hehn,A. Djeffal,S. Mangin###
(1084212, 1084215)
 A magnetoresistance(MR) around 1% has been observed at low temperature through a 450nm long, 6monolayer thick channel with a Co/MgO spin injector and detector.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[36.0, 1, '%', 0],[18.0, 450, 'nm', 0]

MoS2
###Spin transport in molybdenum disulfide multilayer channel|S. H. Liang,Y. Lu,B. S. Tao,S. Mc-Murtry,G. Wang,X. Marie,P. Renucci,H. Jaffrès,F. Montaigne,D. Lacour,J. -M. George,S. Petit-Watelot,M. Hehn,A. Djeffal,S. Mangin###
(1084349, 1084351)
 Moreover, the electron spin-relaxation is found to be greatlysuppressed in the multilayer MoS2 channel for in-plan spin injection.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 1, '%', 2],[155.0, 450, 'nm', 2]

HoPdBi
###Antiferromagnetism and superconductivity in the half-Heusler semimetal HoPdBi|Orest Pavlosiuk,Dariusz Kaczorowski,Xavier Fabreges,Arsen Gukasov,Piotr Wiśniewski###
(1084448, 1084450)
Antiferromagnetism and superconductivity in the half-Heusler semimetal HoPdBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 2, ',', 4],[186.0, 2, ',', 4],[271.0, 50, 'K', 6],[289.0, 7, 'K', 7]

HoPdBi
###Antiferromagnetism and superconductivity in the half-Heusler semimetal HoPdBi|Orest Pavlosiuk,Dariusz Kaczorowski,Xavier Fabreges,Arsen Gukasov,Piotr Wiśniewski###
(1084484, 1084486)
 We observed the coexistence of superconductivity and antiferromagnetic orderin the single-crystalline ternary pnictide HoPdBi, a plausible topologicalsemimetal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 2, ',', 3],[150.0, 2, ',', 3],[235.0, 50, 'K', 5],[253.0, 7, 'K', 6]

N
###Antiferromagnetism and superconductivity in the half-Heusler semimetal HoPdBi|Orest Pavlosiuk,Dariusz Kaczorowski,Xavier Fabreges,Arsen Gukasov,Piotr Wiśniewski###
(1084510, 1084510)
 The compound orders antiferromagnetically at T<missing VAR>N 1.9 K andexhibits superconductivity below Tc 0.7 K, which was confirmed by magnetic,electrical transport and specific heat measurements.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 2, ',', 2],[126.0, 2, ',', 2],[211.0, 50, 'K', 4],[229.0, 7, 'K', 5]

K
###Antiferromagnetism and superconductivity in the half-Heusler semimetal HoPdBi|Orest Pavlosiuk,Dariusz Kaczorowski,Xavier Fabreges,Arsen Gukasov,Piotr Wiśniewski###
(1084514, 1084514)
 The compound orders antiferromagnetically at T<missing VAR>N 1.9 K andexhibits superconductivity below Tc 0.7 K, which was confirmed by magnetic,electrical transport and specific heat measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 2, ',', 2],[122.0, 2, ',', 2],[207.0, 50, 'K', 4],[225.0, 7, 'K', 5]

K
###Antiferromagnetism and superconductivity in the half-Heusler semimetal HoPdBi|Orest Pavlosiuk,Dariusz Kaczorowski,Xavier Fabreges,Arsen Gukasov,Piotr Wiśniewski###
(1084530, 1084530)
 The compound orders antiferromagnetically at T<missing VAR>N 1.9 K andexhibits superconductivity below Tc 0.7 K, which was confirmed by magnetic,electrical transport and specific heat measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 2, ',', 2],[106.0, 2, ',', 2],[191.0, 50, 'K', 4],[209.0, 7, 'K', 5]

In
###Antiferromagnetism and superconductivity in the half-Heusler semimetal HoPdBi|Orest Pavlosiuk,Dariusz Kaczorowski,Xavier Fabreges,Arsen Gukasov,Piotr Wiśniewski###
(1084684, 1084684)
 In weak magnetic fields, themagnetoresistance exhibits weak antilocalization effect, while in strong fieldsand temperatures below 50 K it is large and negative.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 2, ',', 2],[48.0, 2, ',', 2],[37.0, 50, 'K', 0],[55.0, 7, 'K', 1]

At
###Antiferromagnetism and superconductivity in the half-Heusler semimetal HoPdBi|Orest Pavlosiuk,Dariusz Kaczorowski,Xavier Fabreges,Arsen Gukasov,Piotr Wiśniewski###
(1084734, 1084734)
 At temperatures below 7 KShubnikov-de Haas oscillations with two frequencies appear in the resistivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 2, ',', 3],[98.0, 2, ',', 3],[13.0, 50, 'K', 1],[5.0, 7, 'K', 0]

HfTe5
###Topological Critical Point and Resistivity Anomaly in HfTe5|L. X. Zhao,X. C. Huang,Y. J. Long,D. Chen,H. Liang,Z. H. Yang,M. Q. Xue,Z. A. Ren,H. M. Weng,Z. Fang,X. Dai,G. F. Chen###
(1085127, 1085129)
Topological Critical Point and Resistivity Anomaly in HfTe5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HfTe5
###Topological Critical Point and Resistivity Anomaly in HfTe5|L. X. Zhao,X. C. Huang,Y. J. Long,D. Chen,H. Liang,Z. H. Yang,M. Q. Xue,Z. A. Ren,H. M. Weng,Z. Fang,X. Dai,G. F. Chen###
(1085171, 1085173)
 There is a long-standing confusion concerning the physical origin of theanomalous resistivity peak in transition metal pentatelluride HfTe5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Topological Critical Point and Resistivity Anomaly in HfTe5|L. X. Zhao,X. C. Huang,Y. J. Long,D. Chen,H. Liang,Z. H. Yang,M. Q. Xue,Z. A. Ren,H. M. Weng,Z. Fang,X. Dai,G. F. Chen###
(1085228, 1085228)
 In this work,we investigate the unusual temperature dependence of magneto-transportproperties in HfTe5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HfTe5
###Topological Critical Point and Resistivity Anomaly in HfTe5|L. X. Zhao,X. C. Huang,Y. J. Long,D. Chen,H. Liang,Z. H. Yang,M. Q. Xue,Z. A. Ren,H. M. Weng,Z. Fang,X. Dai,G. F. Chen###
(1085259, 1085261)
 In this work,we investigate the unusual temperature dependence of magneto-transportproperties in HfTe5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HfTe5
###Topological Critical Point and Resistivity Anomaly in HfTe5|L. X. Zhao,X. C. Huang,Y. J. Long,D. Chen,H. Liang,Z. H. Yang,M. Q. Xue,Z. A. Ren,H. M. Weng,Z. Fang,X. Dai,G. F. Chen###
(1085377, 1085379)
 Thisaccidental Dirac semimetal state mediates the topological quantum phasetransition between the two distinct weak and strong topological insulatorphases in HfTe5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HfTe5
###Topological Critical Point and Resistivity Anomaly in HfTe5|L. X. Zhao,X. C. Huang,Y. J. Long,D. Chen,H. Liang,Z. H. Yang,M. Q. Xue,Z. A. Ren,H. M. Weng,Z. Fang,X. Dai,G. F. Chen###
(1085417, 1085419)
 Our work not only provides the first evidence of atemperature-induced critical topological phase transition in HfTe5, but alsogives a reasonable explanation on the long-lasting question.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PdTeI
###Strong charge density wave fluctuation and sliding state in PdTeI with quasi-1D PdTe chains|Hechang Lei,Kai Liu,Jun-ichi Yamaura,Sachiko Maki,Youichi Murakami,Zhong-Yi Lu,Hideo Hosono###
(1085472, 1085474)
Strong charge density wave fluctuation and sliding state in PdTeI with quasi-1D<missing VAR> PdTe chains.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[180.0, 110, 'K', 3],[272.0, 6, 'K', 4]

PdTe
###Strong charge density wave fluctuation and sliding state in PdTeI with quasi-1D PdTe chains|Hechang Lei,Kai Liu,Jun-ichi Yamaura,Sachiko Maki,Youichi Murakami,Zhong-Yi Lu,Hideo Hosono###
(1085483, 1085484)
Strong charge density wave fluctuation and sliding state in PdTeI with quasi-1D<missing VAR> PdTe chains.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[170.0, 110, 'K', 3],[262.0, 6, 'K', 4]

In
###Strong charge density wave fluctuation and sliding state in PdTeI with quasi-1D PdTe chains|Hechang Lei,Kai Liu,Jun-ichi Yamaura,Sachiko Maki,Youichi Murakami,Zhong-Yi Lu,Hideo Hosono###
(1085489, 1085489)
 In quasi-one-dimensional (quasi-1D) system, the charge density wave (CD<missing VAR>W)transition temperature TCDW is usually lower than the mean-field-theorypredicted TMF and a CD<missing VAR>W fluctuation region exists between them.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 110, 'K', 2],[257.0, 6, 'K', 3]

C
###Strong charge density wave fluctuation and sliding state in PdTeI with quasi-1D PdTe chains|Hechang Lei,Kai Liu,Jun-ichi Yamaura,Sachiko Maki,Youichi Murakami,Zhong-Yi Lu,Hideo Hosono###
(1085516, 1085516)
 In quasi-one-dimensional (quasi-1D) system, the charge density wave (CD<missing VAR>W)transition temperature TCDW is usually lower than the mean-field-theorypredicted TMF and a CD<missing VAR>W fluctuation region exists between them.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 110, 'K', 2],[230.0, 6, 'K', 3]

W
###Strong charge density wave fluctuation and sliding state in PdTeI with quasi-1D PdTe chains|Hechang Lei,Kai Liu,Jun-ichi Yamaura,Sachiko Maki,Youichi Murakami,Zhong-Yi Lu,Hideo Hosono###
(1085518, 1085518)
 In quasi-one-dimensional (quasi-1D) system, the charge density wave (CD<missing VAR>W)transition temperature TCDW is usually lower than the mean-field-theorypredicted TMF and a CD<missing VAR>W fluctuation region exists between them.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 110, 'K', 2],[228.0, 6, 'K', 3]

W
###Strong charge density wave fluctuation and sliding state in PdTeI with quasi-1D PdTe chains|Hechang Lei,Kai Liu,Jun-ichi Yamaura,Sachiko Maki,Youichi Murakami,Zhong-Yi Lu,Hideo Hosono###
(1085529, 1085529)
 In quasi-one-dimensional (quasi-1D) system, the charge density wave (CD<missing VAR>W)transition temperature TCDW is usually lower than the mean-field-theorypredicted TMF and a CD<missing VAR>W fluctuation region exists between them.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 110, 'K', 2],[217.0, 6, 'K', 3]

F
###Strong charge density wave fluctuation and sliding state in PdTeI with quasi-1D PdTe chains|Hechang Lei,Kai Liu,Jun-ichi Yamaura,Sachiko Maki,Youichi Murakami,Zhong-Yi Lu,Hideo Hosono###
(1085552, 1085552)
 In quasi-one-dimensional (quasi-1D) system, the charge density wave (CD<missing VAR>W)transition temperature TCDW is usually lower than the mean-field-theorypredicted TMF and a CD<missing VAR>W fluctuation region exists between them.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 110, 'K', 2],[194.0, 6, 'K', 3]

C
###Strong charge density wave fluctuation and sliding state in PdTeI with quasi-1D PdTe chains|Hechang Lei,Kai Liu,Jun-ichi Yamaura,Sachiko Maki,Youichi Murakami,Zhong-Yi Lu,Hideo Hosono###
(1085558, 1085558)
 In quasi-one-dimensional (quasi-1D) system, the charge density wave (CD<missing VAR>W)transition temperature TCDW is usually lower than the mean-field-theorypredicted TMF and a CD<missing VAR>W fluctuation region exists between them.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 110, 'K', 2],[188.0, 6, 'K', 3]

W
###Strong charge density wave fluctuation and sliding state in PdTeI with quasi-1D PdTe chains|Hechang Lei,Kai Liu,Jun-ichi Yamaura,Sachiko Maki,Youichi Murakami,Zhong-Yi Lu,Hideo Hosono###
(1085560, 1085560)
 In quasi-one-dimensional (quasi-1D) system, the charge density wave (CD<missing VAR>W)transition temperature TCDW is usually lower than the mean-field-theorypredicted TMF and a CD<missing VAR>W fluctuation region exists between them.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 110, 'K', 2],[186.0, 6, 'K', 3]

PdTeI
###Strong charge density wave fluctuation and sliding state in PdTeI with quasi-1D PdTe chains|Hechang Lei,Kai Liu,Jun-ichi Yamaura,Sachiko Maki,Youichi Murakami,Zhong-Yi Lu,Hideo Hosono###
(1085589, 1085591)
 Here, weinvestigate the physical properties of PdTeI single crystal containing quasi-1D<missing VAR>PdTe chains.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 110, 'K', 1],[155.0, 6, 'K', 2]

PdTe
###Strong charge density wave fluctuation and sliding state in PdTeI with quasi-1D PdTe chains|Hechang Lei,Kai Liu,Jun-ichi Yamaura,Sachiko Maki,Youichi Murakami,Zhong-Yi Lu,Hideo Hosono###
(1085605, 1085606)
 Here, weinvestigate the physical properties of PdTeI single crystal containing quasi-1D<missing VAR>PdTe chains.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 110, 'K', 1],[140.0, 6, 'K', 2]

C
###Strong charge density wave fluctuation and sliding state in PdTeI with quasi-1D PdTe chains|Hechang Lei,Kai Liu,Jun-ichi Yamaura,Sachiko Maki,Youichi Murakami,Zhong-Yi Lu,Hideo Hosono###
(1085639, 1085639)
 Surprisingly, we find that the carrier concentration decreasesgradually before the long-range CD<missing VAR>W ordering state occurring at T<missing VAR>1  110 K,reflecting the existence of strong CD<missing VAR>W fluctuation with possible pseudogapstate at T<missing VAR> >> T<missing VAR>1 because of dynamic charge separation of Pd ions (Pd3 -> Pd2 Pd4).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 110, 'K', 0],[107.0, 6, 'K', 1]

W
###Strong charge density wave fluctuation and sliding state in PdTeI with quasi-1D PdTe chains|Hechang Lei,Kai Liu,Jun-ichi Yamaura,Sachiko Maki,Youichi Murakami,Zhong-Yi Lu,Hideo Hosono###
(1085641, 1085641)
 Surprisingly, we find that the carrier concentration decreasesgradually before the long-range CD<missing VAR>W ordering state occurring at T<missing VAR>1  110 K,reflecting the existence of strong CD<missing VAR>W fluctuation with possible pseudogapstate at T<missing VAR> >> T<missing VAR>1 because of dynamic charge separation of Pd ions (Pd3 -> Pd2 Pd4).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 110, 'K', 0],[105.0, 6, 'K', 1]

C
###Strong charge density wave fluctuation and sliding state in PdTeI with quasi-1D PdTe chains|Hechang Lei,Kai Liu,Jun-ichi Yamaura,Sachiko Maki,Youichi Murakami,Zhong-Yi Lu,Hideo Hosono###
(1085668, 1085668)
 Surprisingly, we find that the carrier concentration decreasesgradually before the long-range CD<missing VAR>W ordering state occurring at T<missing VAR>1  110 K,reflecting the existence of strong CD<missing VAR>W fluctuation with possible pseudogapstate at T<missing VAR> >> T<missing VAR>1 because of dynamic charge separation of Pd ions (Pd3 -> Pd2 Pd4).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 110, 'K', 0],[78.0, 6, 'K', 1]

W
###Strong charge density wave fluctuation and sliding state in PdTeI with quasi-1D PdTe chains|Hechang Lei,Kai Liu,Jun-ichi Yamaura,Sachiko Maki,Youichi Murakami,Zhong-Yi Lu,Hideo Hosono###
(1085670, 1085670)
 Surprisingly, we find that the carrier concentration decreasesgradually before the long-range CD<missing VAR>W ordering state occurring at T<missing VAR>1  110 K,reflecting the existence of strong CD<missing VAR>W fluctuation with possible pseudogapstate at T<missing VAR> >> T<missing VAR>1 because of dynamic charge separation of Pd ions (Pd3 -> Pd2 Pd4).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 110, 'K', 0],[76.0, 6, 'K', 1]

Pd
###Strong charge density wave fluctuation and sliding state in PdTeI with quasi-1D PdTe chains|Hechang Lei,Kai Liu,Jun-ichi Yamaura,Sachiko Maki,Youichi Murakami,Zhong-Yi Lu,Hideo Hosono###
(1085705, 1085705)
 Surprisingly, we find that the carrier concentration decreasesgradually before the long-range CD<missing VAR>W ordering state occurring at T<missing VAR>1  110 K,reflecting the existence of strong CD<missing VAR>W fluctuation with possible pseudogapstate at T<missing VAR> >> T<missing VAR>1 because of dynamic charge separation of Pd ions (Pd3 -> Pd2 Pd4).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 110, 'K', 0],[41.0, 6, 'K', 1]

Pd3
###Strong charge density wave fluctuation and sliding state in PdTeI with quasi-1D PdTe chains|Hechang Lei,Kai Liu,Jun-ichi Yamaura,Sachiko Maki,Youichi Murakami,Zhong-Yi Lu,Hideo Hosono###
(1085710, 1085711)
 Surprisingly, we find that the carrier concentration decreasesgradually before the long-range CD<missing VAR>W ordering state occurring at T<missing VAR>1  110 K,reflecting the existence of strong CD<missing VAR>W fluctuation with possible pseudogapstate at T<missing VAR> >> T<missing VAR>1 because of dynamic charge separation of Pd ions (Pd3 -> Pd2 Pd4).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 110, 'K', 0],[35.0, 6, 'K', 1]

Pd2
###Strong charge density wave fluctuation and sliding state in PdTeI with quasi-1D PdTe chains|Hechang Lei,Kai Liu,Jun-ichi Yamaura,Sachiko Maki,Youichi Murakami,Zhong-Yi Lu,Hideo Hosono###
(1085716, 1085717)
 Surprisingly, we find that the carrier concentration decreasesgradually before the long-range CD<missing VAR>W ordering state occurring at T<missing VAR>1  110 K,reflecting the existence of strong CD<missing VAR>W fluctuation with possible pseudogapstate at T<missing VAR> >> T<missing VAR>1 because of dynamic charge separation of Pd ions (Pd3 -> Pd2 Pd4).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 110, 'K', 0],[29.0, 6, 'K', 1]

Pd4
###Strong charge density wave fluctuation and sliding state in PdTeI with quasi-1D PdTe chains|Hechang Lei,Kai Liu,Jun-ichi Yamaura,Sachiko Maki,Youichi Murakami,Zhong-Yi Lu,Hideo Hosono###
(1085721, 1085722)
 Surprisingly, we find that the carrier concentration decreasesgradually before the long-range CD<missing VAR>W ordering state occurring at T<missing VAR>1  110 K,reflecting the existence of strong CD<missing VAR>W fluctuation with possible pseudogapstate at T<missing VAR> >> T<missing VAR>1 because of dynamic charge separation of Pd ions (Pd3 -> Pd2 Pd4).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 110, 'K', 0],[24.0, 6, 'K', 1]

C
###Strong charge density wave fluctuation and sliding state in PdTeI with quasi-1D PdTe chains|Hechang Lei,Kai Liu,Jun-ichi Yamaura,Sachiko Maki,Youichi Murakami,Zhong-Yi Lu,Hideo Hosono###
(1085733, 1085733)
 Moreover, the sliding CD<missing VAR>W state appears below T<missing VAR>2  6 K.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 110, 'K', 1],[13.0, 6, 'K', 0]

W
###Strong charge density wave fluctuation and sliding state in PdTeI with quasi-1D PdTe chains|Hechang Lei,Kai Liu,Jun-ichi Yamaura,Sachiko Maki,Youichi Murakami,Zhong-Yi Lu,Hideo Hosono###
(1085735, 1085735)
 Moreover, the sliding CD<missing VAR>W state appears below T<missing VAR>2  6 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 110, 'K', 1],[11.0, 6, 'K', 0]

PdTeI
###Strong charge density wave fluctuation and sliding state in PdTeI with quasi-1D PdTe chains|Hechang Lei,Kai Liu,Jun-ichi Yamaura,Sachiko Maki,Youichi Murakami,Zhong-Yi Lu,Hideo Hosono###
(1085777, 1085779)
 Combined suchlow T<missing VAR>2 with the feature of multiple quasi-1D<missing VAR> bands, PdTeI exhibits exoticcrossover behavior from negative to huge positive magnetoresistance undermagnetic field and field-induced localization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 110, 'K', 2],[31.0, 6, 'K', 1]

PdTeI
###Strong charge density wave fluctuation and sliding state in PdTeI with quasi-1D PdTe chains|Hechang Lei,Kai Liu,Jun-ichi Yamaura,Sachiko Maki,Youichi Murakami,Zhong-Yi Lu,Hideo Hosono###
(1085821, 1085823)
 Thus, PdTeI provides a novelplatform for studying the CD<missing VAR>W fluctuation and the interplay between magneticfield and CD<missing VAR>W state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 110, 'K', 3],[75.0, 6, 'K', 2]

C
###Strong charge density wave fluctuation and sliding state in PdTeI with quasi-1D PdTe chains|Hechang Lei,Kai Liu,Jun-ichi Yamaura,Sachiko Maki,Youichi Murakami,Zhong-Yi Lu,Hideo Hosono###
(1085840, 1085840)
 Thus, PdTeI provides a novelplatform for studying the CD<missing VAR>W fluctuation and the interplay between magneticfield and CD<missing VAR>W state.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, 110, 'K', 3],[94.0, 6, 'K', 2]

W
###Strong charge density wave fluctuation and sliding state in PdTeI with quasi-1D PdTe chains|Hechang Lei,Kai Liu,Jun-ichi Yamaura,Sachiko Maki,Youichi Murakami,Zhong-Yi Lu,Hideo Hosono###
(1085842, 1085842)
 Thus, PdTeI provides a novelplatform for studying the CD<missing VAR>W fluctuation and the interplay between magneticfield and CD<missing VAR>W state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 110, 'K', 3],[96.0, 6, 'K', 2]

C
###Strong charge density wave fluctuation and sliding state in PdTeI with quasi-1D PdTe chains|Hechang Lei,Kai Liu,Jun-ichi Yamaura,Sachiko Maki,Youichi Murakami,Zhong-Yi Lu,Hideo Hosono###
(1085861, 1085861)
 Thus, PdTeI provides a novelplatform for studying the CD<missing VAR>W fluctuation and the interplay between magneticfield and CD<missing VAR>W state.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[207.0, 110, 'K', 3],[115.0, 6, 'K', 2]

W
###Strong charge density wave fluctuation and sliding state in PdTeI with quasi-1D PdTe chains|Hechang Lei,Kai Liu,Jun-ichi Yamaura,Sachiko Maki,Youichi Murakami,Zhong-Yi Lu,Hideo Hosono###
(1085863, 1085863)
 Thus, PdTeI provides a novelplatform for studying the CD<missing VAR>W fluctuation and the interplay between magneticfield and CD<missing VAR>W state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[209.0, 110, 'K', 3],[117.0, 6, 'K', 2]

Ni2.048Mn1.312In0.64
###Multiple first order transitions and associated room temperature magneto-functionality in Ni2.048Mn1.312In0.64|S. Pramanick,P. Dutta,S. Chatterjee,S. Giri,S. Majumdar###
(1085898, 1085903)
Multiple first order transitions and associated room temperature magneto-functionality in Ni2.048Mn1.312In0.64.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.328,0,0,0.512,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[263.0, -45, '%', 5],[269.0, -4, '%', 5],[274.0, 80, 'kOe', 5],[298.0, -2.25, 'J', 7],[309.0, 50, 'kOe', 9],[329.0, 195, 'K', 9]

Ni
###Multiple first order transitions and associated room temperature magneto-functionality in Ni2.048Mn1.312In0.64|S. Pramanick,P. Dutta,S. Chatterjee,S. Giri,S. Majumdar###
(1085931, 1085931)
 Present work reports on the observation of multiple magnetic transitions in aNi-excess ferromagnetic shape memory alloy with nominal compositionNi2.048Mn1.312In0.64.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[235.0, -45, '%', 4],[241.0, -4, '%', 4],[246.0, 80, 'kOe', 4],[270.0, -2.25, 'J', 6],[281.0, 50, 'kOe', 8],[301.0, 195, 'K', 8]

Ni2.048Mn1.312In0.64
###Multiple first order transitions and associated room temperature magneto-functionality in Ni2.048Mn1.312In0.64|S. Pramanick,P. Dutta,S. Chatterjee,S. Giri,S. Majumdar###
(1085950, 1085955)
 Present work reports on the observation of multiple magnetic transitions in aNi-excess ferromagnetic shape memory alloy with nominal compositionNi2.048Mn1.312In0.64.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.328,0,0,0.512,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[211.0, -45, '%', 4],[217.0, -4, '%', 4],[222.0, 80, 'kOe', 4],[246.0, -2.25, 'J', 6],[257.0, 50, 'kOe', 8],[277.0, 195, 'K', 8]

In
###Multiple first order transitions and associated room temperature magneto-functionality in Ni2.048Mn1.312In0.64|S. Pramanick,P. Dutta,S. Chatterjee,S. Giri,S. Majumdar###
(1086128, 1086128)
 In addition, the studiedalloy is found to be functionally rich with the observation of largemagnetoresistance (-45% and -4% at 80 kOe) and magnetocaloric effect (16.7J<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, -45, '%', 0],[44.0, -4, '%', 0],[49.0, 80, 'kOe', 0],[73.0, -2.25, 'J', 2],[84.0, 50, 'kOe', 4],[104.0, 195, 'K', 4]

K
###Multiple first order transitions and associated room temperature magneto-functionality in Ni2.048Mn1.312In0.64|S. Pramanick,P. Dutta,S. Chatterjee,S. Giri,S. Majumdar###
(1086196, 1086196)
K-1 and -2.25 J.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, -45, '%', 2],[24.0, -4, '%', 2],[19.0, 80, 'kOe', 2],[5.0, -2.25, 'J', 0],[16.0, 50, 'kOe', 2],[36.0, 195, 'K', 2]

K
###Multiple first order transitions and associated room temperature magneto-functionality in Ni2.048Mn1.312In0.64|S. Pramanick,P. Dutta,S. Chatterjee,S. Giri,S. Majumdar###
(1086207, 1086207)
K-1 at 50 kOe) around these twohysteresis regions (300 K and 195 K respectively).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, -45, '%', 4],[35.0, -4, '%', 4],[30.0, 80, 'kOe', 4],[6.0, -2.25, 'J', 2],[5.0, 50, 'kOe', 0],[25.0, 195, 'K', 0]

K
###Multiple first order transitions and associated room temperature magneto-functionality in Ni2.048Mn1.312In0.64|S. Pramanick,P. Dutta,S. Chatterjee,S. Giri,S. Majumdar###
(1086229, 1086229)
K-1 at 50 kOe) around these twohysteresis regions (300 K and 195 K respectively).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, -45, '%', 4],[57.0, -4, '%', 4],[52.0, 80, 'kOe', 4],[28.0, -2.25, 'J', 2],[17.0, 50, 'kOe', 0],[3.0, 195, 'K', 0]

ISH
###Vector spectroscopy for spin pumping|J. Lustikova,Y. Shiomi,E. Saitoh###
(1086280, 1086282)
 We propose a method to separate the inverse spin Hall effect (ISHE) fromgalvanomagnetic effects in spin pumping experiments on metallic bilayer systemsby measuring the dc electromotive force in two orthogonal directions.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni81Fe19
###Vector spectroscopy for spin pumping|J. Lustikova,Y. Shiomi,E. Saitoh###
(1086355, 1086358)
Calculations of dc voltages in longitudinal and Hall directions induced inNi81Fe19 and Ni81Fe19/Pt films at ferromagnetic resonance in a microwave cavitypredict that contributions from ISHE<missing VAR> and from the galvanomagnetic effects, i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.19,0,0.81,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni81Fe19/Pt
###Vector spectroscopy for spin pumping|J. Lustikova,Y. Shiomi,E. Saitoh###
(1086362, 1086367)
Calculations of dc voltages in longitudinal and Hall directions induced inNi81Fe19 and Ni81Fe19/Pt films at ferromagnetic resonance in a microwave cavitypredict that contributions from ISHE<missing VAR> and from the galvanomagnetic effects, i.e.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

ISH
###Vector spectroscopy for spin pumping|J. Lustikova,Y. Shiomi,E. Saitoh###
(1086394, 1086396)
Calculations of dc voltages in longitudinal and Hall directions induced inNi81Fe19 and Ni81Fe19/Pt films at ferromagnetic resonance in a microwave cavitypredict that contributions from ISHE<missing VAR> and from the galvanomagnetic effects, i.e.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni81Fe19/Pt
###Vector spectroscopy for spin pumping|J. Lustikova,Y. Shiomi,E. Saitoh###
(1086491, 1086496)
 According tomeasurements on Ni81Fe19/Pt, only that dc voltage component which includes ISHE<missing VAR>is more than five times larger than purely galvanomagnetic components.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

ISH
###Vector spectroscopy for spin pumping|J. Lustikova,Y. Shiomi,E. Saitoh###
(1086513, 1086515)
 According tomeasurements on Ni81Fe19/Pt, only that dc voltage component which includes ISHE<missing VAR>is more than five times larger than purely galvanomagnetic components.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.67Sr0.33MnO3/Pt
###Vector spectroscopy for spin pumping|J. Lustikova,Y. Shiomi,E. Saitoh###
(1086553, 1086561)
 This iscorroborated by results on La0.67Sr0.33MnO3/Pt samples, demonstratinguniversality of this method.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

LaBi
###Large magnetoresistance in LaBi: origin of field-induced resistivity upturn and plateau in compensated semimetals|Shanshan Sun,Qi Wang,Peng-Jie Guo,Kai Liu,Hechang Lei###
(1086592, 1086593)
Large magnetoresistance in LaBi origin of field-induced resistivity upturn and plateau in compensated semimetals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaSb
###Large magnetoresistance in LaBi: origin of field-induced resistivity upturn and plateau in compensated semimetals|Shanshan Sun,Qi Wang,Peng-Jie Guo,Kai Liu,Hechang Lei###
(1086701, 1086702)
 Among XMRmaterials, the LaSb shows XMR and field-induced exotic behaviors but it seemsto lack the essentials for these properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaBi
###Large magnetoresistance in LaBi: origin of field-induced resistivity upturn and plateau in compensated semimetals|Shanshan Sun,Qi Wang,Peng-Jie Guo,Kai Liu,Hechang Lei###
(1086764, 1086765)
 Here, we study themagnetotransport properties and electronic structure of LaBi, isostructural toLaSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaSb
###Large magnetoresistance in LaBi: origin of field-induced resistivity upturn and plateau in compensated semimetals|Shanshan Sun,Qi Wang,Peng-Jie Guo,Kai Liu,Hechang Lei###
(1086773, 1086774)
 Here, we study themagnetotransport properties and electronic structure of LaBi, isostructural toLaSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaBi
###Large magnetoresistance in LaBi: origin of field-induced resistivity upturn and plateau in compensated semimetals|Shanshan Sun,Qi Wang,Peng-Jie Guo,Kai Liu,Hechang Lei###
(1086777, 1086778)
 LaBi exhibits large MR as in LaSb, which can be ascribed to the nearlycompensated electron and hole with rather high mobilities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaSb
###Large magnetoresistance in LaBi: origin of field-induced resistivity upturn and plateau in compensated semimetals|Shanshan Sun,Qi Wang,Peng-Jie Guo,Kai Liu,Hechang Lei###
(1086791, 1086792)
 LaBi exhibits large MR as in LaSb, which can be ascribed to the nearlycompensated electron and hole with rather high mobilities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaSb
###Large magnetoresistance in LaBi: origin of field-induced resistivity upturn and plateau in compensated semimetals|Shanshan Sun,Qi Wang,Peng-Jie Guo,Kai Liu,Hechang Lei###
(1086870, 1086871)
 More importantly,our analysis suggests that the XMR as well as field-induced resistivity upturnand plateau observed in LaSb and LaBi can be well explained by the two-bandmodel with the compensation situation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaBi
###Large magnetoresistance in LaBi: origin of field-induced resistivity upturn and plateau in compensated semimetals|Shanshan Sun,Qi Wang,Peng-Jie Guo,Kai Liu,Hechang Lei###
(1086875, 1086876)
 More importantly,our analysis suggests that the XMR as well as field-induced resistivity upturnand plateau observed in LaSb and LaBi can be well explained by the two-bandmodel with the compensation situation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cd3As2
###Weak antilocalization in Cd3As2 thin films|Bo Zhao,Peihong Cheng,Haiyang Pan,Shuai Zhang,Baigeng Wang,Guanghou Wang,Faxian Xiu,Fengqi Song###
(1086976, 1086979)
Weak antilocalization in Cd3As2 thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cd3As2
###Weak antilocalization in Cd3As2 thin films|Bo Zhao,Peihong Cheng,Haiyang Pan,Shuai Zhang,Baigeng Wang,Guanghou Wang,Faxian Xiu,Fengqi Song###
(1087001, 1087004)
 Recently, it has been theoretically predicted that Cd3As2 is a threedimensional Dirac material, a new topological phase discovered aftertopological insulators, which exhibits a linear energy dispersion in the bulkwith massless Dirac fermions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cd3As2
###Weak antilocalization in Cd3As2 thin films|Bo Zhao,Peihong Cheng,Haiyang Pan,Shuai Zhang,Baigeng Wang,Guanghou Wang,Faxian Xiu,Fengqi Song###
(1087095, 1087098)
 Here, we report on the low-temperaturemagnetoresistance measurements on a 50nm-thick Cd3As2 film.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Weak antilocalization in Cd3As2 thin films|Bo Zhao,Peihong Cheng,Haiyang Pan,Shuai Zhang,Baigeng Wang,Guanghou Wang,Faxian Xiu,Fengqi Song###
(1087140, 1087140)
 The weakantilocalization under perpendicular magnetic field is discussed based on thetwo-dimensional Hikami-Larkin-Nagaoka (HL<missing VAR>N) theory.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Weak antilocalization in Cd3As2 thin films|Bo Zhao,Peihong Cheng,Haiyang Pan,Shuai Zhang,Baigeng Wang,Guanghou Wang,Faxian Xiu,Fengqi Song###
(1087142, 1087142)
 The weakantilocalization under perpendicular magnetic field is discussed based on thetwo-dimensional Hikami-Larkin-Nagaoka (HL<missing VAR>N) theory.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TaAs2
###Large Magnetoresistance in Compensated Semimetals TaAs$_2$ and NbAs$_2$|Zhujun Yuan,Hong Lu,Yongjie Liu,Junfeng Wang,Shuang Jia###
(1087277, 1087279)
Large Magnetoresistance in Compensated Semimetals TaAs2 and NbAs2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 9, 'Tesla', 2],[88.0, 2, 'K', 2],[110.0, 10, 'T', 3],[123.0, 45, 'T', 3],[132.0, 4.2, 'K', 3]

NbAs2
###Large Magnetoresistance in Compensated Semimetals TaAs$_2$ and NbAs$_2$|Zhujun Yuan,Hong Lu,Yongjie Liu,Junfeng Wang,Shuang Jia###
(1087283, 1087285)
Large Magnetoresistance in Compensated Semimetals TaAs2 and NbAs2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 9, 'Tesla', 2],[82.0, 2, 'K', 2],[104.0, 10, 'T', 3],[117.0, 45, 'T', 3],[126.0, 4.2, 'K', 3]

TaAs2
###Large Magnetoresistance in Compensated Semimetals TaAs$_2$ and NbAs$_2$|Zhujun Yuan,Hong Lu,Yongjie Liu,Junfeng Wang,Shuang Jia###
(1087318, 1087320)
 We report large magnetoresistance (MR) at low temperatures insingle-crystalline nonmagnetic compounds TaAs2 and NbAs2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 9, 'Tesla', 1],[47.0, 2, 'K', 1],[69.0, 10, 'T', 2],[82.0, 45, 'T', 2],[91.0, 4.2, 'K', 2]

NbAs2
###Large Magnetoresistance in Compensated Semimetals TaAs$_2$ and NbAs$_2$|Zhujun Yuan,Hong Lu,Yongjie Liu,Junfeng Wang,Shuang Jia###
(1087324, 1087326)
 We report large magnetoresistance (MR) at low temperatures insingle-crystalline nonmagnetic compounds TaAs2 and NbAs2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 9, 'Tesla', 1],[41.0, 2, 'K', 1],[63.0, 10, 'T', 2],[76.0, 45, 'T', 2],[85.0, 4.2, 'K', 2]

TaAs2
###Large Magnetoresistance in Compensated Semimetals TaAs$_2$ and NbAs$_2$|Zhujun Yuan,Hong Lu,Yongjie Liu,Junfeng Wang,Shuang Jia###
(1087406, 1087408)
 The MR starts to deviate from parabolic dependenceabove 10 T and intends to be saturated in 45 T for TaAs2 at 4.2 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 9, 'Tesla', 1],[39.0, 2, 'K', 1],[17.0, 10, 'T', 0],[4.0, 45, 'T', 0],[3.0, 4.2, 'K', 0]

TaAs2
###Large Magnetoresistance in Compensated Semimetals TaAs$_2$ and NbAs$_2$|Zhujun Yuan,Hong Lu,Yongjie Liu,Junfeng Wang,Shuang Jia###
(1087515, 1087517)
 We also discuss the relation of the MR and samples quality forTaAs2 and other semimetals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 9, 'Tesla', 4],[148.0, 2, 'K', 4],[126.0, 10, 'T', 3],[113.0, 45, 'T', 3],[104.0, 4.2, 'K', 3]

Se
###Path dependent resistivity study across field induced paramagnetic to ferromagnetic transition in Se doped CoS$_2$|Saroj Kumar Mishra,R Rawat###
(1087595, 1087595)
Path dependent resistivity study across field induced paramagnetic to ferromagnetic transition in Se doped CoS2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 160, '%', 3],[157.0, 5, 'K', 3]

CoS2
###Path dependent resistivity study across field induced paramagnetic to ferromagnetic transition in Se doped CoS$_2$|Saroj Kumar Mishra,R Rawat###
(1087599, 1087601)
Path dependent resistivity study across field induced paramagnetic to ferromagnetic transition in Se doped CoS2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 160, '%', 3],[151.0, 5, 'K', 3]

CoS1.76Se0.24
###Path dependent resistivity study across field induced paramagnetic to ferromagnetic transition in Se doped CoS$_2$|Saroj Kumar Mishra,R Rawat###
(1087616, 1087620)
 A systematic study of thermomagnetic irreversibility CoS1.76Se0.24has been carried out.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5866666666666667,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.08,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 160, '%', 2],[132.0, 5, 'K', 2]

P
###Path dependent resistivity study across field induced paramagnetic to ferromagnetic transition in Se doped CoS$_2$|Saroj Kumar Mishra,R Rawat###
(1087685, 1087685)
 Our study shows that the resistivity at low temperaturecan be tuned by cooling in different magnetic fields and the critical fieldrequired for paramagnetic (PM) to ferromagnetic (FM) transition variesnon-monotonically with temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 160, '%', 1],[67.0, 5, 'K', 1]

F
###Path dependent resistivity study across field induced paramagnetic to ferromagnetic transition in Se doped CoS$_2$|Saroj Kumar Mishra,R Rawat###
(1087694, 1087694)
 Our study shows that the resistivity at low temperaturecan be tuned by cooling in different magnetic fields and the critical fieldrequired for paramagnetic (PM) to ferromagnetic (FM) transition variesnon-monotonically with temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 160, '%', 1],[58.0, 5, 'K', 1]

P
###Path dependent resistivity study across field induced paramagnetic to ferromagnetic transition in Se doped CoS$_2$|Saroj Kumar Mishra,R Rawat###
(1087718, 1087718)
 The field induced PM<missing VAR> to FM<missing VAR> transitionresults in giant positive magnetoresistance (MR) of about 160% at 5 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 160, '%', 0],[34.0, 5, 'K', 0]

F
###Path dependent resistivity study across field induced paramagnetic to ferromagnetic transition in Se doped CoS$_2$|Saroj Kumar Mishra,R Rawat###
(1087723, 1087723)
 The field induced PM<missing VAR> to FM<missing VAR> transitionresults in giant positive magnetoresistance (MR) of about 160% at 5 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 160, '%', 0],[29.0, 5, 'K', 0]

CHUF
###Path dependent resistivity study across field induced paramagnetic to ferromagnetic transition in Se doped CoS$_2$|Saroj Kumar Mishra,R Rawat###
(1087760, 1087763)
Measurements under CHUF (cooling and heating in unequal magnetic field)protocol show reentrant transition on warming under higher magnetic field (thanthat applied during cooling).
Featurization terminated normally.
0.25,0,0,0,0,0.25,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0
[12.0, 160, '%', 1],[8.0, 5, 'K', 1]

P
###Path dependent resistivity study across field induced paramagnetic to ferromagnetic transition in Se doped CoS$_2$|Saroj Kumar Mishra,R Rawat###
(1087930, 1087930)
 Among the growing list of diverse system showing glass likearrested magnetic states, the present system is the first example where,kinetic arrest is observed for a disordered (here PM) to ordered (here FM)first order transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[182.0, 160, '%', 3],[178.0, 5, 'K', 3]

F
###Path dependent resistivity study across field induced paramagnetic to ferromagnetic transition in Se doped CoS$_2$|Saroj Kumar Mishra,R Rawat###
(1087941, 1087941)
 Among the growing list of diverse system showing glass likearrested magnetic states, the present system is the first example where,kinetic arrest is observed for a disordered (here PM) to ordered (here FM)first order transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[193.0, 160, '%', 3],[189.0, 5, 'K', 3]

I
###Magnetic radial vortex stabilization and efficient manipulation driven by the Dzyaloshinskii Moriya Interaction and the spin-transfer torque|G. Siracusano,R. Tomasello A. Giordano,V. Puliafito,B. Azzerboni,O. Ozatay,M. Carpentieri,G. Finocchio###
(1088095, 1088095)
Here, we show how the interfacial Dzyaloshinskii Moriya Interaction (i DMI) isable to lift the energy degeneracy of a magnetic vortex state by stabilizing atopological soliton with radial chirality, hereafter called radial vortex.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 0.5, '<', 1],[182.0, 106, 'A', 2]

S
###Magnetic radial vortex stabilization and efficient manipulation driven by the Dzyaloshinskii Moriya Interaction and the spin-transfer torque|G. Siracusano,R. Tomasello A. Giordano,V. Puliafito,B. Azzerboni,O. Ozatay,M. Carpentieri,G. Finocchio###
(1088165, 1088165)
 Ithas a non-integer skyrmion number S (0.5<S<1) due to both the vortex corepolarity and the magnetization tilting induced by the i DMI boundaryconditions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 0.5, '<', 0],[112.0, 106, 'A', 1]

S
###Magnetic radial vortex stabilization and efficient manipulation driven by the Dzyaloshinskii Moriya Interaction and the spin-transfer torque|G. Siracusano,R. Tomasello A. Giordano,V. Puliafito,B. Azzerboni,O. Ozatay,M. Carpentieri,G. Finocchio###
(1088170, 1088170)
 Ithas a non-integer skyrmion number S (0.5<S<1) due to both the vortex corepolarity and the magnetization tilting induced by the i DMI boundaryconditions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 0.5, '<', 0],[107.0, 106, 'A', 1]

I
###Magnetic radial vortex stabilization and efficient manipulation driven by the Dzyaloshinskii Moriya Interaction and the spin-transfer torque|G. Siracusano,R. Tomasello A. Giordano,V. Puliafito,B. Azzerboni,O. Ozatay,M. Carpentieri,G. Finocchio###
(1088208, 1088208)
 Ithas a non-integer skyrmion number S (0.5<S<1) due to both the vortex corepolarity and the magnetization tilting induced by the i DMI boundaryconditions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 0.5, '<', 0],[69.0, 106, 'A', 1]

N
###Magnetotransport in single layer graphene in a large parallel magnetic field|F. Chiappini,S. Wiedmann,M. Titov,A. K. Geim,R. V. Gorbachev,E. Khestanova,A. Mishchenko,K. S. Novoselov,J. C. Maan,U. Zeitler###
(1088383, 1088383)
 Graphene on hexagonal boron-nitride (h<missing VAR>-BN) is an atomically flat conductingsystem that is ideally suited for probing the effect of Zeeman splitting onelectron transport.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 30, 'Tesla', 1]

BN
###Magnetotransport in single layer graphene in a large parallel magnetic field|F. Chiappini,S. Wiedmann,M. Titov,A. K. Geim,R. V. Gorbachev,E. Khestanova,A. Mishchenko,K. S. Novoselov,J. C. Maan,U. Zeitler###
(1088478, 1088479)
 We demonstrate by magneto-transport measurements that aparallel magnetic field up to 30 Tesla does not affect the transport propertiesof graphene on h<missing VAR>-BN even at charge neutrality where such an effect is expectedto be maximal.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 30, 'Tesla', 0]

LaSb
###Perfect charge compensation in extremely large magnetoresistance materials LaSb and LaBi revealed by the first-principles calculations|Peng-Jie Guo,Huan-Cheng Yang,Kai Liu,Zhong-Yi Lu###
(1088981, 1088982)
Perfect charge compensation in extremely large magnetoresistance materials LaSb and LaBi revealed by the first-principles calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaBi
###Perfect charge compensation in extremely large magnetoresistance materials LaSb and LaBi revealed by the first-principles calculations|Peng-Jie Guo,Huan-Cheng Yang,Kai Liu,Zhong-Yi Lu###
(1088986, 1088987)
Perfect charge compensation in extremely large magnetoresistance materials LaSb and LaBi revealed by the first-principles calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaSb
###Perfect charge compensation in extremely large magnetoresistance materials LaSb and LaBi revealed by the first-principles calculations|Peng-Jie Guo,Huan-Cheng Yang,Kai Liu,Zhong-Yi Lu###
(1089053, 1089054)
 By the first-principles electronic structure calculations, we havesystematically studied the electronic structures of recently discoveredextremely large magnetoresistance (XMR) materials LaSb and LaBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaBi
###Perfect charge compensation in extremely large magnetoresistance materials LaSb and LaBi revealed by the first-principles calculations|Peng-Jie Guo,Huan-Cheng Yang,Kai Liu,Zhong-Yi Lu###
(1089058, 1089059)
 By the first-principles electronic structure calculations, we havesystematically studied the electronic structures of recently discoveredextremely large magnetoresistance (XMR) materials LaSb and LaBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaSb
###Perfect charge compensation in extremely large magnetoresistance materials LaSb and LaBi revealed by the first-principles calculations|Peng-Jie Guo,Huan-Cheng Yang,Kai Liu,Zhong-Yi Lu###
(1089071, 1089072)
 We find thatboth LaSb and LaBi are semimetals with the electron and hole carriers inperfect balance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaBi
###Perfect charge compensation in extremely large magnetoresistance materials LaSb and LaBi revealed by the first-principles calculations|Peng-Jie Guo,Huan-Cheng Yang,Kai Liu,Zhong-Yi Lu###
(1089076, 1089077)
 We find thatboth LaSb and LaBi are semimetals with the electron and hole carriers inperfect balance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaSb
###Perfect charge compensation in extremely large magnetoresistance materials LaSb and LaBi revealed by the first-principles calculations|Peng-Jie Guo,Huan-Cheng Yang,Kai Liu,Zhong-Yi Lu###
(1089219, 1089220)
 With asemiclassical two-band model, the perfect charge compensation and high carriermobilities naturally explain (i) the XMR observed in LaSb and LaBi; (ii) thenon-saturating quadratic dependence of XMR on external magnetic field; and(iii) the resistivity plateau in the turn-on temperature behavior at very lowtemperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaBi
###Perfect charge compensation in extremely large magnetoresistance materials LaSb and LaBi revealed by the first-principles calculations|Peng-Jie Guo,Huan-Cheng Yang,Kai Liu,Zhong-Yi Lu###
(1089224, 1089225)
 With asemiclassical two-band model, the perfect charge compensation and high carriermobilities naturally explain (i) the XMR observed in LaSb and LaBi; (ii) thenon-saturating quadratic dependence of XMR on external magnetic field; and(iii) the resistivity plateau in the turn-on temperature behavior at very lowtemperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Giant Voltage Manipulation of MgO-based Magnetic Tunnel Junctions via Localized Anisotropic Strain: a Potential Pathway to Ultra-Energy-Efficient Memory Technology|Zhengyang Zhao,Mahdi Jamali,Noel D'Souza,Delin Zhang,Supriyo Bandyopadhyay,Jayasimha Atulasimha,Jian-Ping Wang###
(1089364, 1089365)
Giant Voltage Manipulation of MgO-based Magnetic Tunnel Junctions via Localized Anisotropic Strain a Potential Pathway to Ultra-Energy-Efficient Memory Technology.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Giant Voltage Manipulation of MgO-based Magnetic Tunnel Junctions via Localized Anisotropic Strain: a Potential Pathway to Ultra-Energy-Efficient Memory Technology|Zhengyang Zhao,Mahdi Jamali,Noel D'Souza,Delin Zhang,Supriyo Bandyopadhyay,Jayasimha Atulasimha,Jian-Ping Wang###
(1089463, 1089464)
 Here, we demonstrate giant voltagemanipulation of MgO magnetic tunnel junctions (MTJ) on aPb(Mg1/3Nb2/3)0.7Ti0.3O3 (PM<missing VAR>N-PT) piezoelectric substrate with (001)orientation.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pb
###Giant Voltage Manipulation of MgO-based Magnetic Tunnel Junctions via Localized Anisotropic Strain: a Potential Pathway to Ultra-Energy-Efficient Memory Technology|Zhengyang Zhao,Mahdi Jamali,Noel D'Souza,Delin Zhang,Supriyo Bandyopadhyay,Jayasimha Atulasimha,Jian-Ping Wang###
(1089483, 1089483)
 Here, we demonstrate giant voltagemanipulation of MgO magnetic tunnel junctions (MTJ) on aPb(Mg1/3Nb2/3)0.7Ti0.3O3 (PM<missing VAR>N-PT) piezoelectric substrate with (001)orientation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mg1
###Giant Voltage Manipulation of MgO-based Magnetic Tunnel Junctions via Localized Anisotropic Strain: a Potential Pathway to Ultra-Energy-Efficient Memory Technology|Zhengyang Zhao,Mahdi Jamali,Noel D'Souza,Delin Zhang,Supriyo Bandyopadhyay,Jayasimha Atulasimha,Jian-Ping Wang###
(1089485, 1089486)
 Here, we demonstrate giant voltagemanipulation of MgO magnetic tunnel junctions (MTJ) on aPb(Mg1/3Nb2/3)0.7Ti0.3O3 (PM<missing VAR>N-PT) piezoelectric substrate with (001)orientation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nb2
###Giant Voltage Manipulation of MgO-based Magnetic Tunnel Junctions via Localized Anisotropic Strain: a Potential Pathway to Ultra-Energy-Efficient Memory Technology|Zhengyang Zhao,Mahdi Jamali,Noel D'Souza,Delin Zhang,Supriyo Bandyopadhyay,Jayasimha Atulasimha,Jian-Ping Wang###
(1089489, 1089490)
 Here, we demonstrate giant voltagemanipulation of MgO magnetic tunnel junctions (MTJ) on aPb(Mg1/3Nb2/3)0.7Ti0.3O3 (PM<missing VAR>N-PT) piezoelectric substrate with (001)orientation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ti0.3O3
###Giant Voltage Manipulation of MgO-based Magnetic Tunnel Junctions via Localized Anisotropic Strain: a Potential Pathway to Ultra-Energy-Efficient Memory Technology|Zhengyang Zhao,Mahdi Jamali,Noel D'Souza,Delin Zhang,Supriyo Bandyopadhyay,Jayasimha Atulasimha,Jian-Ping Wang###
(1089495, 1089498)
 Here, we demonstrate giant voltagemanipulation of MgO magnetic tunnel junctions (MTJ) on aPb(Mg1/3Nb2/3)0.7Ti0.3O3 (PM<missing VAR>N-PT) piezoelectric substrate with (001)orientation.
Featurization terminated normally.
0,0,0,0,0,0,0,0.9090909090909092,0,0,0,0,0,0,0,0,0,0,0,0,0,0.09090909090909091,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Giant Voltage Manipulation of MgO-based Magnetic Tunnel Junctions via Localized Anisotropic Strain: a Potential Pathway to Ultra-Energy-Efficient Memory Technology|Zhengyang Zhao,Mahdi Jamali,Noel D'Souza,Delin Zhang,Supriyo Bandyopadhyay,Jayasimha Atulasimha,Jian-Ping Wang###
(1089501, 1089501)
 Here, we demonstrate giant voltagemanipulation of MgO magnetic tunnel junctions (MTJ) on aPb(Mg1/3Nb2/3)0.7Ti0.3O3 (PM<missing VAR>N-PT) piezoelectric substrate with (001)orientation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Giant Voltage Manipulation of MgO-based Magnetic Tunnel Junctions via Localized Anisotropic Strain: a Potential Pathway to Ultra-Energy-Efficient Memory Technology|Zhengyang Zhao,Mahdi Jamali,Noel D'Souza,Delin Zhang,Supriyo Bandyopadhyay,Jayasimha Atulasimha,Jian-Ping Wang###
(1089503, 1089503)
 Here, we demonstrate giant voltagemanipulation of MgO magnetic tunnel junctions (MTJ) on aPb(Mg1/3Nb2/3)0.7Ti0.3O3 (PM<missing VAR>N-PT) piezoelectric substrate with (001)orientation.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Giant Voltage Manipulation of MgO-based Magnetic Tunnel Junctions via Localized Anisotropic Strain: a Potential Pathway to Ultra-Energy-Efficient Memory Technology|Zhengyang Zhao,Mahdi Jamali,Noel D'Souza,Delin Zhang,Supriyo Bandyopadhyay,Jayasimha Atulasimha,Jian-Ping Wang###
(1089505, 1089505)
 Here, we demonstrate giant voltagemanipulation of MgO magnetic tunnel junctions (MTJ) on aPb(Mg1/3Nb2/3)0.7Ti0.3O3 (PM<missing VAR>N-PT) piezoelectric substrate with (001)orientation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Giant Voltage Manipulation of MgO-based Magnetic Tunnel Junctions via Localized Anisotropic Strain: a Potential Pathway to Ultra-Energy-Efficient Memory Technology|Zhengyang Zhao,Mahdi Jamali,Noel D'Souza,Delin Zhang,Supriyo Bandyopadhyay,Jayasimha Atulasimha,Jian-Ping Wang###
(1089726, 1089727)
 Additionally, theadoption of crystalline MgO-based MTJ on piezoelectric layer lends itself tohigh TMR in the strain-mediated MRAM<missing VAR> devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HfTe5
###Pressure-driven Superconductivity in Transition-metal Pentatelluride HfTe5|Yanpeng Qi,Wujun Shi,Pavel G. Naumov,Nitesh Kumar,Walter Schnelle,Oleg Barkalov,Chandra Shekhar,Horst Borrmann,Claudia Felser,Binghai Yan,Sergey A. Medvedev###
(1089792, 1089794)
Pressure-driven Superconductivity in Transition-metal Pentatelluride HfTe5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[256.0, 5, 'GPa', 6],[285.0, 20, 'GPa', 7]

WTe2
###Pressure-driven Superconductivity in Transition-metal Pentatelluride HfTe5|Yanpeng Qi,Wujun Shi,Pavel G. Naumov,Nitesh Kumar,Walter Schnelle,Oleg Barkalov,Chandra Shekhar,Horst Borrmann,Claudia Felser,Binghai Yan,Sergey A. Medvedev###
(1089834, 1089836)
 Layered transition-metal tellurides have attracted considerable attentionbecause of their rich physics; for example, tungsten ditelluride WTe2 exhibitsextremely large magnetoresistance; the tritelluride ZrTe3 shows a chargedensity wave transition at low temperature; and the pentatelluride ZrTe5displays an enigmatic resistivity anomaly and large thermoelectric power.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[214.0, 5, 'GPa', 5],[243.0, 20, 'GPa', 6]

ZrTe3
###Pressure-driven Superconductivity in Transition-metal Pentatelluride HfTe5|Yanpeng Qi,Wujun Shi,Pavel G. Naumov,Nitesh Kumar,Walter Schnelle,Oleg Barkalov,Chandra Shekhar,Horst Borrmann,Claudia Felser,Binghai Yan,Sergey A. Medvedev###
(1089852, 1089854)
 Layered transition-metal tellurides have attracted considerable attentionbecause of their rich physics; for example, tungsten ditelluride WTe2 exhibitsextremely large magnetoresistance; the tritelluride ZrTe3 shows a chargedensity wave transition at low temperature; and the pentatelluride ZrTe5displays an enigmatic resistivity anomaly and large thermoelectric power.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[196.0, 5, 'GPa', 5],[225.0, 20, 'GPa', 6]

ZrTe5
###Pressure-driven Superconductivity in Transition-metal Pentatelluride HfTe5|Yanpeng Qi,Wujun Shi,Pavel G. Naumov,Nitesh Kumar,Walter Schnelle,Oleg Barkalov,Chandra Shekhar,Horst Borrmann,Claudia Felser,Binghai Yan,Sergey A. Medvedev###
(1089882, 1089884)
 Layered transition-metal tellurides have attracted considerable attentionbecause of their rich physics; for example, tungsten ditelluride WTe2 exhibitsextremely large magnetoresistance; the tritelluride ZrTe3 shows a chargedensity wave transition at low temperature; and the pentatelluride ZrTe5displays an enigmatic resistivity anomaly and large thermoelectric power.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 5, 'GPa', 5],[195.0, 20, 'GPa', 6]

ZrTe5
###Pressure-driven Superconductivity in Transition-metal Pentatelluride HfTe5|Yanpeng Qi,Wujun Shi,Pavel G. Naumov,Nitesh Kumar,Walter Schnelle,Oleg Barkalov,Chandra Shekhar,Horst Borrmann,Claudia Felser,Binghai Yan,Sergey A. Medvedev###
(1089940, 1089942)
 ZrTe5 and HfTe5) or Weyl semimetals (e.g.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 5, 'GPa', 3],[137.0, 20, 'GPa', 4]

Te5
###Pressure-driven Superconductivity in Transition-metal Pentatelluride HfTe5|Yanpeng Qi,Wujun Shi,Pavel G. Naumov,Nitesh Kumar,Walter Schnelle,Oleg Barkalov,Chandra Shekhar,Horst Borrmann,Claudia Felser,Binghai Yan,Sergey A. Medvedev###
(1089947, 1089948)
 ZrTe5 and HfTe5) or Weyl semimetals (e.g.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 5, 'GPa', 3],[131.0, 20, 'GPa', 4]

WTe2
###Pressure-driven Superconductivity in Transition-metal Pentatelluride HfTe5|Yanpeng Qi,Wujun Shi,Pavel G. Naumov,Nitesh Kumar,Walter Schnelle,Oleg Barkalov,Chandra Shekhar,Horst Borrmann,Claudia Felser,Binghai Yan,Sergey A. Medvedev###
(1089963, 1089965)
 WTe2 and MoTe2) andwere subjected to intensive investigations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 5, 'GPa', 2],[114.0, 20, 'GPa', 3]

Te2
###Pressure-driven Superconductivity in Transition-metal Pentatelluride HfTe5|Yanpeng Qi,Wujun Shi,Pavel G. Naumov,Nitesh Kumar,Walter Schnelle,Oleg Barkalov,Chandra Shekhar,Horst Borrmann,Claudia Felser,Binghai Yan,Sergey A. Medvedev###
(1089970, 1089971)
 WTe2 and MoTe2) andwere subjected to intensive investigations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 5, 'GPa', 2],[108.0, 20, 'GPa', 3]

HfTe5
###Pressure-driven Superconductivity in Transition-metal Pentatelluride HfTe5|Yanpeng Qi,Wujun Shi,Pavel G. Naumov,Nitesh Kumar,Walter Schnelle,Oleg Barkalov,Chandra Shekhar,Horst Borrmann,Claudia Felser,Binghai Yan,Sergey A. Medvedev###
(1090012, 1090014)
 Here, we report on the discovery ofsuperconductivity in hafnium pentatelluride HfTe5 under high pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 5, 'GPa', 1],[65.0, 20, 'GPa', 2]

K
###Pressure-driven Superconductivity in Transition-metal Pentatelluride HfTe5|Yanpeng Qi,Wujun Shi,Pavel G. Naumov,Nitesh Kumar,Walter Schnelle,Oleg Barkalov,Chandra Shekhar,Horst Borrmann,Claudia Felser,Binghai Yan,Sergey A. Medvedev###
(1090066, 1090066)
 A maximal critical temperature of4.8 K is attained at a pressure of 20 GPa, and superconductivity persists up tothe maximum pressure in our study (42 G<missing VAR>Pa).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 5, 'GPa', 1],[13.0, 20, 'GPa', 0]

Pa
###Pressure-driven Superconductivity in Transition-metal Pentatelluride HfTe5|Yanpeng Qi,Wujun Shi,Pavel G. Naumov,Nitesh Kumar,Walter Schnelle,Oleg Barkalov,Chandra Shekhar,Horst Borrmann,Claudia Felser,Binghai Yan,Sergey A. Medvedev###
(1090109, 1090109)
 A maximal critical temperature of4.8 K is attained at a pressure of 20 GPa, and superconductivity persists up tothe maximum pressure in our study (42 G<missing VAR>Pa).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 5, 'GPa', 1],[30.0, 20, 'GPa', 0]

Te
###Pressure-driven Superconductivity in Transition-metal Pentatelluride HfTe5|Yanpeng Qi,Wujun Shi,Pavel G. Naumov,Nitesh Kumar,Walter Schnelle,Oleg Barkalov,Chandra Shekhar,Horst Borrmann,Claudia Felser,Binghai Yan,Sergey A. Medvedev###
(1090134, 1090134)
 Theoretical calculations indicatethat the superconductivity develops mainly in the Te atom layers at mediumpressure and in the Te atom chains at high pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 5, 'GPa', 2],[55.0, 20, 'GPa', 1]

Te
###Pressure-driven Superconductivity in Transition-metal Pentatelluride HfTe5|Yanpeng Qi,Wujun Shi,Pavel G. Naumov,Nitesh Kumar,Walter Schnelle,Oleg Barkalov,Chandra Shekhar,Horst Borrmann,Claudia Felser,Binghai Yan,Sergey A. Medvedev###
(1090153, 1090153)
 Theoretical calculations indicatethat the superconductivity develops mainly in the Te atom layers at mediumpressure and in the Te atom chains at high pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 5, 'GPa', 2],[74.0, 20, 'GPa', 1]

Tc
###Transport anomalies and quantum criticality in electron-doped cuprate superconductors|Xu Zhang,Heshan Yu,Ge He,Wei Hu,Jie Yuan,Beiyi Zhu,Kui Jin###
(1090225, 1090225)
 Three decades afterthe discovery of high-Tc cuprates, there have been mass data generated fromtransport measurements, which bring fruitful information.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Transport anomalies and quantum criticality in electron-doped cuprate superconductors|Xu Zhang,Heshan Yu,Ge He,Wei Hu,Jie Yuan,Beiyi Zhu,Kui Jin###
(1090259, 1090259)
 In this review, wegive a brief summary of the intriguing phenomena reported in electron-dopedcuprates from the aspect of electrical transport as well as the complementarythermal transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CeCoIn5
###Magnetoresistance of the heavy-fermion metal CeCoIn5|V. R. Shaginyan,K. G. Popov###
(1090471, 1090474)
Magnetoresistance of the heavy-fermion metal CeCoIn5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7142857142857143,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CeCoIn5
###Magnetoresistance of the heavy-fermion metal CeCoIn5|V. R. Shaginyan,K. G. Popov###
(1090488, 1090491)
 The magnetoresistance (MR) of CeCoIn5 is notably different from that expectedfor orbital MR due to the Lorentz force and described by Kohlers<missing VAR> rule whichholds in many conventional metals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7142857142857143,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CeCoIn5
###Magnetoresistance of the heavy-fermion metal CeCoIn5|V. R. Shaginyan,K. G. Popov###
(1090574, 1090577)
 We show that a pronounced crossover fromnegative to positive MR of CeCoIn5 that occurs at elevated temperatures isdetermined by the dependence of the effective mass M<missing VAR>(B,T) on both magneticfield B and temperature T<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7142857142857143,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Magnetoresistance of the heavy-fermion metal CeCoIn5|V. R. Shaginyan,K. G. Popov###
(1090610, 1090610)
 We show that a pronounced crossover fromnegative to positive MR of CeCoIn5 that occurs at elevated temperatures isdetermined by the dependence of the effective mass M<missing VAR>(B,T) on both magneticfield B and temperature T<missing VAR>.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Magnetoresistance of the heavy-fermion metal CeCoIn5|V. R. Shaginyan,K. G. Popov###
(1090624, 1090624)
 We show that a pronounced crossover fromnegative to positive MR of CeCoIn5 that occurs at elevated temperatures isdetermined by the dependence of the effective mass M<missing VAR>(B,T) on both magneticfield B and temperature T<missing VAR>.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Magnetoresistance of the heavy-fermion metal CeCoIn5|V. R. Shaginyan,K. G. Popov###
(1090657, 1090657)
 Thus, the crossover is regulated by the universalbehavior of M<missing VAR>(B,T) observed in heavy-fermion metals.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Magnetoresistance of the heavy-fermion metal CeCoIn5|V. R. Shaginyan,K. G. Popov###
(1090686, 1090686)
 This behavior isexhibited by M<missing VAR>(B,T) when a strongly correlated electron system transits fromthe Landau Fermi liquid behavior induced by the application of magnetic fieldto the non-Fermi liquid behavior taking place at rising temperatures.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sm1-xCa
###Pseudogap behavior of phase-separated Sm$_{1-x}$Ca$_x$MnO$_3$ : A comparative photoemission study with double exchange|P. Pal,M. K. Dalai,R. Kundu,B. R. Sekhar,C. Martin###
(1090813, 1090817)
Pseudogap behavior of phase-separated Sm1-xCax<missing VAR>MnO3  A comparative photoemission study with double exchange.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

MnO3
###Pseudogap behavior of phase-separated Sm$_{1-x}$Ca$_x$MnO$_3$ : A comparative photoemission study with double exchange|P. Pal,M. K. Dalai,R. Kundu,B. R. Sekhar,C. Martin###
(1090819, 1090821)
Pseudogap behavior of phase-separated Sm1-xCax<missing VAR>MnO3  A comparative photoemission study with double exchange.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sm1-xCa
###Pseudogap behavior of phase-separated Sm$_{1-x}$Ca$_x$MnO$_3$ : A comparative photoemission study with double exchange|P. Pal,M. K. Dalai,R. Kundu,B. R. Sekhar,C. Martin###
(1090895, 1090899)
 Using valence band photoemission we have demonstrated the presence of apseudogap in the near Fermi level electronic spectrum of some of the mixedphase compositions of Sm1-xCax<missing VAR>MnO3 system.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

MnO3
###Pseudogap behavior of phase-separated Sm$_{1-x}$Ca$_x$MnO$_3$ : A comparative photoemission study with double exchange|P. Pal,M. K. Dalai,R. Kundu,B. R. Sekhar,C. Martin###
(1090901, 1090903)
 Using valence band photoemission we have demonstrated the presence of apseudogap in the near Fermi level electronic spectrum of some of the mixedphase compositions of Sm1-xCax<missing VAR>MnO3 system.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La1-xSr
###Pseudogap behavior of phase-separated Sm$_{1-x}$Ca$_x$MnO$_3$ : A comparative photoemission study with double exchange|P. Pal,M. K. Dalai,R. Kundu,B. R. Sekhar,C. Martin###
(1091014, 1091018)
 We have made a study comparingthe near Fermi level behaviors of this system to those of a canonical doubleexchange system, namely, La1-xSrx<missing VAR>MnO3.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

MnO3
###Pseudogap behavior of phase-separated Sm$_{1-x}$Ca$_x$MnO$_3$ : A comparative photoemission study with double exchange|P. Pal,M. K. Dalai,R. Kundu,B. R. Sekhar,C. Martin###
(1091020, 1091022)
 We have made a study comparingthe near Fermi level behaviors of this system to those of a canonical doubleexchange system, namely, La1-xSrx<missing VAR>MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnO6
###Pseudogap behavior of phase-separated Sm$_{1-x}$Ca$_x$MnO$_3$ : A comparative photoemission study with double exchange|P. Pal,M. K. Dalai,R. Kundu,B. R. Sekhar,C. Martin###
(1091114, 1091116)
 These differences could beascribed to the distortions in the MnO6 octahedra of their structures thatregulate the localization of charge carriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Thickness dependent magnetic anisotropy of ultrathin LCMO epitaxial thin films|Norbert M. Nemes,Mar Garcia-Hernandez,Zsolt Szatmari,Titusz Feher,Ferenc Simon,Cristina Visani,Vanessa Pena,Christian Miller,Javier Garcia-Barriocanal,Flavio Bruno,Zouhair Sefrioui,Carlos Leon,Jacobo Santamaria###
(1091205, 1091205)
Thickness dependent magnetic anisotropy of ultrathin LCMO epitaxial thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 3, 'nm', 3],[179.0, 6, 'nm', 4],[342.0, 45, 'degrees', 7],[345.0, 4, 'nm', 7],[348.0, 15, 'nm', 7]

La0.7Ca0.3MnO3
###Thickness dependent magnetic anisotropy of ultrathin LCMO epitaxial thin films|Norbert M. Nemes,Mar Garcia-Hernandez,Zsolt Szatmari,Titusz Feher,Ferenc Simon,Cristina Visani,Vanessa Pena,Christian Miller,Javier Garcia-Barriocanal,Flavio Bruno,Zouhair Sefrioui,Carlos Leon,Jacobo Santamaria###
(1091222, 1091228)
 The magnetic properties of La0.7Ca0.3MnO3 (LCMO) manganite thin films werestudied with magnetometry and ferromagnetic resonance as a function of filmthickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 3, 'nm', 2],[156.0, 6, 'nm', 3],[319.0, 45, 'degrees', 6],[322.0, 4, 'nm', 6],[325.0, 15, 'nm', 6]

O
###Thickness dependent magnetic anisotropy of ultrathin LCMO epitaxial thin films|Norbert M. Nemes,Mar Garcia-Hernandez,Zsolt Szatmari,Titusz Feher,Ferenc Simon,Cristina Visani,Vanessa Pena,Christian Miller,Javier Garcia-Barriocanal,Flavio Bruno,Zouhair Sefrioui,Carlos Leon,Jacobo Santamaria###
(1091234, 1091234)
 The magnetic properties of La0.7Ca0.3MnO3 (LCMO) manganite thin films werestudied with magnetometry and ferromagnetic resonance as a function of filmthickness.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 3, 'nm', 2],[150.0, 6, 'nm', 3],[313.0, 45, 'degrees', 6],[316.0, 4, 'nm', 6],[319.0, 15, 'nm', 6]

K
###Thickness dependent magnetic anisotropy of ultrathin LCMO epitaxial thin films|Norbert M. Nemes,Mar Garcia-Hernandez,Zsolt Szatmari,Titusz Feher,Ferenc Simon,Cristina Visani,Vanessa Pena,Christian Miller,Javier Garcia-Barriocanal,Flavio Bruno,Zouhair Sefrioui,Carlos Leon,Jacobo Santamaria###
(1091303, 1091303)
 They maintain the colossal magnetoresistance behavior with apronounced metal-insulator transition around 150-200 K, except for the verythinnest films studied (3 nm).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 3, 'nm', 1],[81.0, 6, 'nm', 2],[244.0, 45, 'degrees', 5],[247.0, 4, 'nm', 5],[250.0, 15, 'nm', 5]

O
###Thickness dependent magnetic anisotropy of ultrathin LCMO epitaxial thin films|Norbert M. Nemes,Mar Garcia-Hernandez,Zsolt Szatmari,Titusz Feher,Ferenc Simon,Cristina Visani,Vanessa Pena,Christian Miller,Javier Garcia-Barriocanal,Flavio Bruno,Zouhair Sefrioui,Carlos Leon,Jacobo Santamaria###
(1091334, 1091334)
 Nevertheless, LCMO films as thin as 3 nm remainferromagnetic, without a decrease in saturation magnetization, indicating anabsence of dead-layers, although below approx.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 3, 'nm', 0],[50.0, 6, 'nm', 1],[213.0, 45, 'degrees', 4],[216.0, 4, 'nm', 4],[219.0, 15, 'nm', 4]

SrTiO3
###Thickness dependent magnetic anisotropy of ultrathin LCMO epitaxial thin films|Norbert M. Nemes,Mar Garcia-Hernandez,Zsolt Szatmari,Titusz Feher,Ferenc Simon,Cristina Visani,Vanessa Pena,Christian Miller,Javier Garcia-Barriocanal,Flavio Bruno,Zouhair Sefrioui,Carlos Leon,Jacobo Santamaria###
(1091537, 1091540)
 Thedirections of the easy axes with respect to the crystallographic directions ofthe cubic SrTiO3 substrate differ by 45 degrees in 4 nm and 15 nm thick LCMOfilms.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[194.0, 3, 'nm', 4],[153.0, 6, 'nm', 3],[7.0, 45, 'degrees', 0],[10.0, 4, 'nm', 0],[13.0, 15, 'nm', 0]

O
###Thickness dependent magnetic anisotropy of ultrathin LCMO epitaxial thin films|Norbert M. Nemes,Mar Garcia-Hernandez,Zsolt Szatmari,Titusz Feher,Ferenc Simon,Cristina Visani,Vanessa Pena,Christian Miller,Javier Garcia-Barriocanal,Flavio Bruno,Zouhair Sefrioui,Carlos Leon,Jacobo Santamaria###
(1091560, 1091560)
 Thedirections of the easy axes with respect to the crystallographic directions ofthe cubic SrTiO3 substrate differ by 45 degrees in 4 nm and 15 nm thick LCMOfilms.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[217.0, 3, 'nm', 4],[176.0, 6, 'nm', 3],[13.0, 45, 'degrees', 0],[10.0, 4, 'nm', 0],[7.0, 15, 'nm', 0]

(BHSCs)
###The role of electron-hole recombination in organic magnetoresistance|Sayani Majumdar,Himadri S Majumdar,Harri Aarnio,Dirk Vanderzande,Reino Laiho,Ronald Osterbacka###
(1091618, 1091623)
 Magneto-electrical measurements were performed on diodes and bulkheterojunction solar cells (BHSCs) to clarify the role of formation ofcoulombically bound electron-hole (e-h) pairs on the magnetoresistance (MR)response in organic thin film devices.
Featurization successful!
0.25,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BHSCs
###The role of electron-hole recombination in organic magnetoresistance|Sayani Majumdar,Himadri S Majumdar,Harri Aarnio,Dirk Vanderzande,Reino Laiho,Ronald Osterbacka###
(1091681, 1091684)
 BHSCs are suitable model systems becausethey effectively quench excitons but the probability of forming e-h pairs inthem can be tuned over orders of magnitude by the choice of material andsolvent in the blend.
Featurization terminated normally.
0.25,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B0.5
###The role of electron-hole recombination in organic magnetoresistance|Sayani Majumdar,Himadri S Majumdar,Harri Aarnio,Dirk Vanderzande,Reino Laiho,Ronald Osterbacka###
(1091918, 1091919)
 We also found thatthe MR line shape follows a power law-dependence of B0.5 at higher fields.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/ZnSe/Fe/ZnSe/Fe
###Gate control of the tunneling magnetoresistance in double-barrier junctions|J. Peralta-Ramos,A. M. Llois###
(1092008, 1092018)
 We calculate the conductances and the tunneling magnetoresistance (TMR) ofdouble magnetic tunnel junctions, taking as a model example junctions composedof Fe/ZnSe/Fe/ZnSe/Fe (001).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Fe
###Gate control of the tunneling magnetoresistance in double-barrier junctions|J. Peralta-Ramos,A. M. Llois###
(1092058, 1092058)
 The calculations are done as a function of thegate voltage applied to the in-between Fe layer slab.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Gate control of the tunneling magnetoresistance in double-barrier junctions|J. Peralta-Ramos,A. M. Llois###
(1092092, 1092092)
 We find that theapplication of a gate voltage to the in-between Fe slab strongly affects thejunctions TMR due to the tuning or untuning of conductance resonances mediatedby quantum well states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Gate control of the tunneling magnetoresistance in double-barrier junctions|J. Peralta-Ramos,A. M. Llois###
(1092192, 1092192)
 The gate voltage allows a significant enhancement ofthe TMR, in a more controllable way than by changing the thickness of thein-between Fe slab.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Substitutional disorder and charge localization in manganites|Eduardo V. Castro,J. M. B. Lopes dos Santos###
(1092274, 1092274)
 In the manganites RE1-xAExMnO3 (RE and AE<missing VAR> being rare-earthand alkaline-earth elements, respectively) the random distribution of RE3and AE<missing VAR>2 induces random, but correlated, shifts of site energies of chargecarriers in the Mn sites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnO3
###Substitutional disorder and charge localization in manganites|Eduardo V. Castro,J. M. B. Lopes dos Santos###
(1092288, 1092290)
 In the manganites RE1-xAExMnO3 (RE and AE<missing VAR> being rare-earthand alkaline-earth elements, respectively) the random distribution of RE3and AE<missing VAR>2 induces random, but correlated, shifts of site energies of chargecarriers in the Mn sites.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Substitutional disorder and charge localization in manganites|Eduardo V. Castro,J. M. B. Lopes dos Santos###
(1092368, 1092368)
 In the manganites RE1-xAExMnO3 (RE and AE<missing VAR> being rare-earthand alkaline-earth elements, respectively) the random distribution of RE3and AE<missing VAR>2 induces random, but correlated, shifts of site energies of chargecarriers in the Mn sites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

UCoGe
###Extremely Large and Anisotropic Upper Critical Field and the Ferromagnetic Instability in UCoGe|Dai Aoki,Tatsuma D. Matsuda,Valentin Taufour,Elena Hassinger,Georg Knebel,Jacques Flouquet###
(1092976, 1092978)
Extremely Large and Anisotropic Upper Critical Field and the Ferromagnetic Instability in UCoGe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[125.0, 20, 'T', 2],[128.0, 0, 'K', 2],[163.0, 30, 'T', 3],[174.0, 0, 'K', 3],[183.0, 0.6, 'T', 3]

UCoGe
###Extremely Large and Anisotropic Upper Critical Field and the Ferromagnetic Instability in UCoGe|Dai Aoki,Tatsuma D. Matsuda,Valentin Taufour,Elena Hassinger,Georg Knebel,Jacques Flouquet###
(1093018, 1093020)
 Magnetoresistivity measurements with fine tuning of the field direction onhigh quality single crystals of the ferromagnetic superconductor UCoGe showanomalous anisotropy of the upper critical field Hc<missing VAR>2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[83.0, 20, 'T', 1],[86.0, 0, 'K', 1],[121.0, 30, 'T', 2],[132.0, 0, 'K', 2],[141.0, 0.6, 'T', 2]

H
###Extremely Large and Anisotropic Upper Critical Field and the Ferromagnetic Instability in UCoGe|Dai Aoki,Tatsuma D. Matsuda,Valentin Taufour,Elena Hassinger,Georg Knebel,Jacques Flouquet###
(1093039, 1093039)
 Magnetoresistivity measurements with fine tuning of the field direction onhigh quality single crystals of the ferromagnetic superconductor UCoGe showanomalous anisotropy of the upper critical field Hc<missing VAR>2.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 20, 'T', 1],[67.0, 0, 'K', 1],[102.0, 30, 'T', 2],[113.0, 0, 'K', 2],[122.0, 0.6, 'T', 2]

H
###Extremely Large and Anisotropic Upper Critical Field and the Ferromagnetic Instability in UCoGe|Dai Aoki,Tatsuma D. Matsuda,Valentin Taufour,Elena Hassinger,Georg Knebel,Jacques Flouquet###
(1093044, 1093044)
 Hc<missing VAR>2 for H // b<missing VAR>-axis(Hc2b) in the orthorhombic crystal structure is strongly enhanced withdecreasing temperature with an S-shape and reaches nearly 20 T at 0 K.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 20, 'T', 0],[62.0, 0, 'K', 0],[97.0, 30, 'T', 1],[108.0, 0, 'K', 1],[117.0, 0.6, 'T', 1]

H
###Extremely Large and Anisotropic Upper Critical Field and the Ferromagnetic Instability in UCoGe|Dai Aoki,Tatsuma D. Matsuda,Valentin Taufour,Elena Hassinger,Georg Knebel,Jacques Flouquet###
(1093050, 1093050)
 Hc<missing VAR>2 for H // b<missing VAR>-axis(Hc2b) in the orthorhombic crystal structure is strongly enhanced withdecreasing temperature with an S-shape and reaches nearly 20 T at 0 K.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 20, 'T', 0],[56.0, 0, 'K', 0],[91.0, 30, 'T', 1],[102.0, 0, 'K', 1],[111.0, 0.6, 'T', 1]

H
###Extremely Large and Anisotropic Upper Critical Field and the Ferromagnetic Instability in UCoGe|Dai Aoki,Tatsuma D. Matsuda,Valentin Taufour,Elena Hassinger,Georg Knebel,Jacques Flouquet###
(1093061, 1093061)
 Hc<missing VAR>2 for H // b<missing VAR>-axis(Hc2b) in the orthorhombic crystal structure is strongly enhanced withdecreasing temperature with an S-shape and reaches nearly 20 T at 0 K.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 20, 'T', 0],[45.0, 0, 'K', 0],[80.0, 30, 'T', 1],[91.0, 0, 'K', 1],[100.0, 0.6, 'T', 1]

S
###Extremely Large and Anisotropic Upper Critical Field and the Ferromagnetic Instability in UCoGe|Dai Aoki,Tatsuma D. Matsuda,Valentin Taufour,Elena Hassinger,Georg Knebel,Jacques Flouquet###
(1093094, 1093094)
 Hc<missing VAR>2 for H // b<missing VAR>-axis(Hc2b) in the orthorhombic crystal structure is strongly enhanced withdecreasing temperature with an S-shape and reaches nearly 20 T at 0 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 20, 'T', 0],[12.0, 0, 'K', 0],[47.0, 30, 'T', 1],[58.0, 0, 'K', 1],[67.0, 0.6, 'T', 1]

H
###Extremely Large and Anisotropic Upper Critical Field and the Ferromagnetic Instability in UCoGe|Dai Aoki,Tatsuma D. Matsuda,Valentin Taufour,Elena Hassinger,Georg Knebel,Jacques Flouquet###
(1093118, 1093118)
 Thetemperature dependence of Hc<missing VAR>2a shows upward curvature with a low temperaturevalue exceeding 30 T, while Hc2c at 0 K is very small ( 0.6 T).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 20, 'T', 1],[12.0, 0, 'K', 1],[23.0, 30, 'T', 0],[34.0, 0, 'K', 0],[43.0, 0.6, 'T', 0]

H
###Extremely Large and Anisotropic Upper Critical Field and the Ferromagnetic Instability in UCoGe|Dai Aoki,Tatsuma D. Matsuda,Valentin Taufour,Elena Hassinger,Georg Knebel,Jacques Flouquet###
(1093146, 1093146)
 Thetemperature dependence of Hc<missing VAR>2a shows upward curvature with a low temperaturevalue exceeding 30 T, while Hc2c at 0 K is very small ( 0.6 T).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 20, 'T', 1],[40.0, 0, 'K', 1],[5.0, 30, 'T', 0],[6.0, 0, 'K', 0],[15.0, 0.6, 'T', 0]

H
###Extremely Large and Anisotropic Upper Critical Field and the Ferromagnetic Instability in UCoGe|Dai Aoki,Tatsuma D. Matsuda,Valentin Taufour,Elena Hassinger,Georg Knebel,Jacques Flouquet###
(1093196, 1093196)
 Contrary toconventional ferromagnets, the decrease of the Curie temperature withincreasing field for H // b<missing VAR>-axis marked by an enhancement of the effective massof the conduction electrons appears to be the origin of the S-shaped Hc2bcurve.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 20, 'T', 2],[90.0, 0, 'K', 2],[55.0, 30, 'T', 1],[44.0, 0, 'K', 1],[35.0, 0.6, 'T', 1]

S
###Extremely Large and Anisotropic Upper Critical Field and the Ferromagnetic Instability in UCoGe|Dai Aoki,Tatsuma D. Matsuda,Valentin Taufour,Elena Hassinger,Georg Knebel,Jacques Flouquet###
(1093244, 1093244)
 Contrary toconventional ferromagnets, the decrease of the Curie temperature withincreasing field for H // b<missing VAR>-axis marked by an enhancement of the effective massof the conduction electrons appears to be the origin of the S-shaped Hc2bcurve.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 20, 'T', 2],[138.0, 0, 'K', 2],[103.0, 30, 'T', 1],[92.0, 0, 'K', 1],[83.0, 0.6, 'T', 1]

H
###Extremely Large and Anisotropic Upper Critical Field and the Ferromagnetic Instability in UCoGe|Dai Aoki,Tatsuma D. Matsuda,Valentin Taufour,Elena Hassinger,Georg Knebel,Jacques Flouquet###
(1093248, 1093248)
 Contrary toconventional ferromagnets, the decrease of the Curie temperature withincreasing field for H // b<missing VAR>-axis marked by an enhancement of the effective massof the conduction electrons appears to be the origin of the S-shaped Hc2bcurve.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 20, 'T', 2],[142.0, 0, 'K', 2],[107.0, 30, 'T', 1],[96.0, 0, 'K', 1],[87.0, 0.6, 'T', 1]

MgO
###MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers|K. Mizunuma,S. Ikeda,J. H. Park,H. Yamamoto,H. Gan,K. Miura,H. Hasegawa,J. Hayakawa,F. Matsukura,H. Ohno###
(1093297, 1093298)
MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 67, '%', 2],[173.0, 250, 'degree', 2],[263.0, 350, 'oC', 4],[293.0, 78, '%', 4]

CoFe/Pd
###MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers|K. Mizunuma,S. Ikeda,J. H. Park,H. Yamamoto,H. Gan,K. Miura,H. Hasegawa,J. Hayakawa,F. Matsukura,H. Ohno###
(1093312, 1093315)
MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[119.0, 67, '%', 2],[156.0, 250, 'degree', 2],[246.0, 350, 'oC', 4],[276.0, 78, '%', 4]

Co20Fe60B20
###MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers|K. Mizunuma,S. Ikeda,J. H. Park,H. Yamamoto,H. Gan,K. Miura,H. Hasegawa,J. Hayakawa,F. Matsukura,H. Ohno###
(1093343, 1093348)
 The authors studied an effect of ferromagnetic (Co20Fe60B20 or Fe) layerinsertion on tunnel magnetoresistance (TMR) properties of MgO-barrier magnetictunnel junctions (MTJs) with CoFe/Pd multilayer electrodes.
Featurization terminated normally.
0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 67, '%', 1],[123.0, 250, 'degree', 1],[213.0, 350, 'oC', 3],[243.0, 78, '%', 3]

Fe
###MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers|K. Mizunuma,S. Ikeda,J. H. Park,H. Yamamoto,H. Gan,K. Miura,H. Hasegawa,J. Hayakawa,F. Matsukura,H. Ohno###
(1093352, 1093352)
 The authors studied an effect of ferromagnetic (Co20Fe60B20 or Fe) layerinsertion on tunnel magnetoresistance (TMR) properties of MgO-barrier magnetictunnel junctions (MTJs) with CoFe/Pd multilayer electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 67, '%', 1],[119.0, 250, 'degree', 1],[209.0, 350, 'oC', 3],[239.0, 78, '%', 3]

MgO
###MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers|K. Mizunuma,S. Ikeda,J. H. Park,H. Yamamoto,H. Gan,K. Miura,H. Hasegawa,J. Hayakawa,F. Matsukura,H. Ohno###
(1093376, 1093377)
 The authors studied an effect of ferromagnetic (Co20Fe60B20 or Fe) layerinsertion on tunnel magnetoresistance (TMR) properties of MgO-barrier magnetictunnel junctions (MTJs) with CoFe/Pd multilayer electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 67, '%', 1],[94.0, 250, 'degree', 1],[184.0, 350, 'oC', 3],[214.0, 78, '%', 3]

CoFe/Pd
###MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers|K. Mizunuma,S. Ikeda,J. H. Park,H. Yamamoto,H. Gan,K. Miura,H. Hasegawa,J. Hayakawa,F. Matsukura,H. Ohno###
(1093396, 1093399)
 The authors studied an effect of ferromagnetic (Co20Fe60B20 or Fe) layerinsertion on tunnel magnetoresistance (TMR) properties of MgO-barrier magnetictunnel junctions (MTJs) with CoFe/Pd multilayer electrodes.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[35.0, 67, '%', 1],[72.0, 250, 'degree', 1],[162.0, 350, 'oC', 3],[192.0, 78, '%', 3]

CoFeB/MgO/Fe
###MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers|K. Mizunuma,S. Ikeda,J. H. Park,H. Yamamoto,H. Gan,K. Miura,H. Hasegawa,J. Hayakawa,F. Matsukura,H. Ohno###
(1093421, 1093428)
 TMR ratio in MTJswith CoFeB/MgO/Fe stack reached 67% at an-nealing temperature (Ta) of 200degree C and then decreased rapidly at Ta over 250 degree C.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[6.0, 67, '%', 0],[43.0, 250, 'degree', 0],[133.0, 350, 'oC', 2],[163.0, 78, '%', 2]

(Ta)
###MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers|K. Mizunuma,S. Ikeda,J. H. Park,H. Yamamoto,H. Gan,K. Miura,H. Hasegawa,J. Hayakawa,F. Matsukura,H. Ohno###
(1093445, 1093447)
 TMR ratio in MTJswith CoFeB/MgO/Fe stack reached 67% at an-nealing temperature (Ta) of 200degree C and then decreased rapidly at Ta over 250 degree C.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 67, '%', 0],[24.0, 250, 'degree', 0],[114.0, 350, 'oC', 2],[144.0, 78, '%', 2]

C
###MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers|K. Mizunuma,S. Ikeda,J. H. Park,H. Yamamoto,H. Gan,K. Miura,H. Hasegawa,J. Hayakawa,F. Matsukura,H. Ohno###
(1093456, 1093456)
 TMR ratio in MTJswith CoFeB/MgO/Fe stack reached 67% at an-nealing temperature (Ta) of 200degree C and then decreased rapidly at Ta over 250 degree C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 67, '%', 0],[15.0, 250, 'degree', 0],[105.0, 350, 'oC', 2],[135.0, 78, '%', 2]

Ta
###MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers|K. Mizunuma,S. Ikeda,J. H. Park,H. Yamamoto,H. Gan,K. Miura,H. Hasegawa,J. Hayakawa,F. Matsukura,H. Ohno###
(1093468, 1093468)
 TMR ratio in MTJswith CoFeB/MgO/Fe stack reached 67% at an-nealing temperature (Ta) of 200degree C and then decreased rapidly at Ta over 250 degree C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 67, '%', 0],[3.0, 250, 'degree', 0],[93.0, 350, 'oC', 2],[123.0, 78, '%', 2]

C
###MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers|K. Mizunuma,S. Ikeda,J. H. Park,H. Yamamoto,H. Gan,K. Miura,H. Hasegawa,J. Hayakawa,F. Matsukura,H. Ohno###
(1093473, 1093473)
 TMR ratio in MTJswith CoFeB/MgO/Fe stack reached 67% at an-nealing temperature (Ta) of 200degree C and then decreased rapidly at Ta over 250 degree C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 67, '%', 0],[2.0, 250, 'degree', 0],[88.0, 350, 'oC', 2],[118.0, 78, '%', 2]

CoFe(B)
###MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers|K. Mizunuma,S. Ikeda,J. H. Park,H. Yamamoto,H. Gan,K. Miura,H. Hasegawa,J. Hayakawa,F. Matsukura,H. Ohno###
(1093503, 1093507)
 The degradation ofthe TMR ratio may be related to crystallization of CoFe(B) into fcc(111) orbcc(011) texture result-ing from diffusion of B into Pd layers.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 67, '%', 1],[32.0, 250, 'degree', 1],[54.0, 350, 'oC', 1],[84.0, 78, '%', 1]

B
###MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers|K. Mizunuma,S. Ikeda,J. H. Park,H. Yamamoto,H. Gan,K. Miura,H. Hasegawa,J. Hayakawa,F. Matsukura,H. Ohno###
(1093536, 1093536)
 The degradation ofthe TMR ratio may be related to crystallization of CoFe(B) into fcc(111) orbcc(011) texture result-ing from diffusion of B into Pd layers.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 67, '%', 1],[65.0, 250, 'degree', 1],[25.0, 350, 'oC', 1],[55.0, 78, '%', 1]

Pd
###MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers|K. Mizunuma,S. Ikeda,J. H. Park,H. Yamamoto,H. Gan,K. Miura,H. Hasegawa,J. Hayakawa,F. Matsukura,H. Ohno###
(1093540, 1093540)
 The degradation ofthe TMR ratio may be related to crystallization of CoFe(B) into fcc(111) orbcc(011) texture result-ing from diffusion of B into Pd layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 67, '%', 1],[69.0, 250, 'degree', 1],[21.0, 350, 'oC', 1],[51.0, 78, '%', 1]

CoFe/Pd
###MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers|K. Mizunuma,S. Ikeda,J. H. Park,H. Yamamoto,H. Gan,K. Miura,H. Hasegawa,J. Hayakawa,F. Matsukura,H. Ohno###
(1093573, 1093576)
 MTJs which werein-situ annealed at 350oC just after depo-siting bottom CoFe/Pd multilayershowed TMR ratio of 78% by post annealing at Ta 200 degree C.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[139.0, 67, '%', 2],[102.0, 250, 'degree', 2],[12.0, 350, 'oC', 0],[15.0, 78, '%', 0]

Ta
###MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers|K. Mizunuma,S. Ikeda,J. H. Park,H. Yamamoto,H. Gan,K. Miura,H. Hasegawa,J. Hayakawa,F. Matsukura,H. Ohno###
(1093602, 1093602)
 MTJs which werein-situ annealed at 350oC just after depo-siting bottom CoFe/Pd multilayershowed TMR ratio of 78% by post annealing at Ta 200 degree C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[168.0, 67, '%', 2],[131.0, 250, 'degree', 2],[41.0, 350, 'oC', 0],[11.0, 78, '%', 0]

C
###MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers|K. Mizunuma,S. Ikeda,J. H. Park,H. Yamamoto,H. Gan,K. Miura,H. Hasegawa,J. Hayakawa,F. Matsukura,H. Ohno###
(1093608, 1093608)
 MTJs which werein-situ annealed at 350oC just after depo-siting bottom CoFe/Pd multilayershowed TMR ratio of 78% by post annealing at Ta 200 degree C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[174.0, 67, '%', 2],[137.0, 250, 'degree', 2],[47.0, 350, 'oC', 0],[17.0, 78, '%', 0]

Al
###Interfacial Effects of Al-Termination on Spin Transport in Magnetic Tunnel Junctions|T. Tzen Ong,A. M. Black-Schaffer,W. Shen,B. A. Jones###
(1093625, 1093625)
Interfacial Effects of Al-Termination on Spin Transport in Magnetic Tunnel Junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co/Al2O3
###Interfacial Effects of Al-Termination on Spin Transport in Magnetic Tunnel Junctions|T. Tzen Ong,A. M. Black-Schaffer,W. Shen,B. A. Jones###
(1093662, 1093667)
 Experiments have shown that the tunneling current in a Co/Al2O3magnetic tunneling junction (MTJ) is positively spin polarized, opposite towhat is intuitively expected from standard tunneling theory which gives thespin polarization as exclusively dependent on the density of states (D<missing VAR>OS) atE<missing VAR>F of the Co layers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

S
###Interfacial Effects of Al-Termination on Spin Transport in Magnetic Tunnel Junctions|T. Tzen Ong,A. M. Black-Schaffer,W. Shen,B. A. Jones###
(1093742, 1093742)
 Experiments have shown that the tunneling current in a Co/Al2O3magnetic tunneling junction (MTJ) is positively spin polarized, opposite towhat is intuitively expected from standard tunneling theory which gives thespin polarization as exclusively dependent on the density of states (D<missing VAR>OS) atE<missing VAR>F of the Co layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Interfacial Effects of Al-Termination on Spin Transport in Magnetic Tunnel Junctions|T. Tzen Ong,A. M. Black-Schaffer,W. Shen,B. A. Jones###
(1093749, 1093749)
 Experiments have shown that the tunneling current in a Co/Al2O3magnetic tunneling junction (MTJ) is positively spin polarized, opposite towhat is intuitively expected from standard tunneling theory which gives thespin polarization as exclusively dependent on the density of states (D<missing VAR>OS) atE<missing VAR>F of the Co layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Interfacial Effects of Al-Termination on Spin Transport in Magnetic Tunnel Junctions|T. Tzen Ong,A. M. Black-Schaffer,W. Shen,B. A. Jones###
(1093755, 1093755)
 Experiments have shown that the tunneling current in a Co/Al2O3magnetic tunneling junction (MTJ) is positively spin polarized, opposite towhat is intuitively expected from standard tunneling theory which gives thespin polarization as exclusively dependent on the density of states (D<missing VAR>OS) atE<missing VAR>F of the Co layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Al
###Interfacial Effects of Al-Termination on Spin Transport in Magnetic Tunnel Junctions|T. Tzen Ong,A. M. Black-Schaffer,W. Shen,B. A. Jones###
(1093833, 1093833)
 From density functional theory (DFT)calculations, an Al-rich interface MTJ with atomic-level disorder is shown tohave a positively polarized D<missing VAR>OS near the interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OS
###Interfacial Effects of Al-Termination on Spin Transport in Magnetic Tunnel Junctions|T. Tzen Ong,A. M. Black-Schaffer,W. Shen,B. A. Jones###
(1093867, 1093868)
 From density functional theory (DFT)calculations, an Al-rich interface MTJ with atomic-level disorder is shown tohave a positively polarized D<missing VAR>OS near the interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Contrasting Pair-Breaking Effects by Doping Mn and Zn in Ba0.5K0.5Fe2As2|Peng Cheng,Bing Shen,Jiangping Hu,Hai-Hu Wen###
(1094036, 1094036)
Contrasting Pair-Breaking Effects by Doping Mn and Zn in Ba0.5K0.5Fe2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, -1, '%', 2],[110.0, -4.2, 'K', 2]

Zn
###Contrasting Pair-Breaking Effects by Doping Mn and Zn in Ba0.5K0.5Fe2As2|Peng Cheng,Bing Shen,Jiangping Hu,Hai-Hu Wen###
(1094040, 1094040)
Contrasting Pair-Breaking Effects by Doping Mn and Zn in Ba0.5K0.5Fe2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, -1, '%', 2],[106.0, -4.2, 'K', 2]

Ba0.5K0.5Fe2As2
###Contrasting Pair-Breaking Effects by Doping Mn and Zn in Ba0.5K0.5Fe2As2|Peng Cheng,Bing Shen,Jiangping Hu,Hai-Hu Wen###
(1094044, 1094051)
Contrasting Pair-Breaking Effects by Doping Mn and Zn in Ba0.5K0.5Fe2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, -1, '%', 2],[95.0, -4.2, 'K', 2]

C
###Contrasting Pair-Breaking Effects by Doping Mn and Zn in Ba0.5K0.5Fe2As2|Peng Cheng,Bing Shen,Jiangping Hu,Hai-Hu Wen###
(1094067, 1094067)
 Resistivity, Hall effect, magnetoresistance and D<missing VAR>C magnetization weremeasured in Mn and Zn doped Ba0.5K0.5Fe2As2 samples.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, -1, '%', 1],[79.0, -4.2, 'K', 1]

Mn
###Contrasting Pair-Breaking Effects by Doping Mn and Zn in Ba0.5K0.5Fe2As2|Peng Cheng,Bing Shen,Jiangping Hu,Hai-Hu Wen###
(1094078, 1094078)
 Resistivity, Hall effect, magnetoresistance and D<missing VAR>C magnetization weremeasured in Mn and Zn doped Ba0.5K0.5Fe2As2 samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, -1, '%', 1],[68.0, -4.2, 'K', 1]

Zn
###Contrasting Pair-Breaking Effects by Doping Mn and Zn in Ba0.5K0.5Fe2As2|Peng Cheng,Bing Shen,Jiangping Hu,Hai-Hu Wen###
(1094082, 1094082)
 Resistivity, Hall effect, magnetoresistance and D<missing VAR>C magnetization weremeasured in Mn and Zn doped Ba0.5K0.5Fe2As2 samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, -1, '%', 1],[64.0, -4.2, 'K', 1]

Ba0.5K0.5Fe2As2
###Contrasting Pair-Breaking Effects by Doping Mn and Zn in Ba0.5K0.5Fe2As2|Peng Cheng,Bing Shen,Jiangping Hu,Hai-Hu Wen###
(1094086, 1094093)
 Resistivity, Hall effect, magnetoresistance and D<missing VAR>C magnetization weremeasured in Mn and Zn doped Ba0.5K0.5Fe2As2 samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, -1, '%', 1],[53.0, -4.2, 'K', 1]

Mn
###Contrasting Pair-Breaking Effects by Doping Mn and Zn in Ba0.5K0.5Fe2As2|Peng Cheng,Bing Shen,Jiangping Hu,Hai-Hu Wen###
(1094109, 1094109)
 It isfound that the Mn-doping can depress the superconducting transition temperaturedrastically with a rate of Delta Tc/Mn-1%  -4.2 K, while that by Zn-dopingis negligible.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, -1, '%', 0],[37.0, -4.2, 'K', 0]

Mn
###Contrasting Pair-Breaking Effects by Doping Mn and Zn in Ba0.5K0.5Fe2As2|Peng Cheng,Bing Shen,Jiangping Hu,Hai-Hu Wen###
(1094141, 1094141)
 It isfound that the Mn-doping can depress the superconducting transition temperaturedrastically with a rate of Delta Tc/Mn-1%  -4.2 K, while that by Zn-dopingis negligible.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[1.0, -1, '%', 0],[5.0, -4.2, 'K', 0]

Zn
###Contrasting Pair-Breaking Effects by Doping Mn and Zn in Ba0.5K0.5Fe2As2|Peng Cheng,Bing Shen,Jiangping Hu,Hai-Hu Wen###
(1094155, 1094155)
 It isfound that the Mn-doping can depress the superconducting transition temperaturedrastically with a rate of Delta Tc/Mn-1%  -4.2 K, while that by Zn-dopingis negligible.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, -1, '%', 0],[9.0, -4.2, 'K', 0]

Mn
###Contrasting Pair-Breaking Effects by Doping Mn and Zn in Ba0.5K0.5Fe2As2|Peng Cheng,Bing Shen,Jiangping Hu,Hai-Hu Wen###
(1094175, 1094175)
 Detailed analysis reveals that the Mn-doping enhances theresidual resistivity (rho0) significantly, and induces strong localmagnetic moments (sim 2.58 muB) which play as pair breakers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, -1, '%', 1],[29.0, -4.2, 'K', 1]

B
###Contrasting Pair-Breaking Effects by Doping Mn and Zn in Ba0.5K0.5Fe2As2|Peng Cheng,Bing Shen,Jiangping Hu,Hai-Hu Wen###
(1094215, 1094215)
 Detailed analysis reveals that the Mn-doping enhances theresidual resistivity (rho0) significantly, and induces strong localmagnetic moments (sim 2.58 muB) which play as pair breakers.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, -1, '%', 1],[69.0, -4.2, 'K', 1]

Zn
###Contrasting Pair-Breaking Effects by Doping Mn and Zn in Ba0.5K0.5Fe2As2|Peng Cheng,Bing Shen,Jiangping Hu,Hai-Hu Wen###
(1094249, 1094249)
 While theimpurity scattering measured by rho0 in the Zn-doped samples is muchweaker, accompanied by a negligible pair breaking effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, -1, '%', 2],[103.0, -4.2, 'K', 2]

Zn
###Contrasting Pair-Breaking Effects by Doping Mn and Zn in Ba0.5K0.5Fe2As2|Peng Cheng,Bing Shen,Jiangping Hu,Hai-Hu Wen###
(1094299, 1094299)
 A possibleexplanation is that the impurity scattering by the Zn impurities are mainlysmall angle scattering (or small momentum transfer), therefore it cannot breakthe pairing induced by the interpocket scattering and thus affect thesuperconducting transition temperature weakly.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, -1, '%', 3],[153.0, -4.2, 'K', 3]

H
###Hydrogenated Graphene Nanoribbons for Spintronics|D. Soriano,F. Muñoz-Rojas,J. Fernández-Rossier,J. J. Palacios###
(1094465, 1094465)
 Densityfunctional theory calculations show that an adsorbed H atom induces a spindensity on the surrounding pi orbitals whose symmetry and degree oflocalization depends on the distance to the edges of the nanoribbon.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Hydrogenated Graphene Nanoribbons for Spintronics|D. Soriano,F. Muñoz-Rojas,J. Fernández-Rossier,J. J. Palacios###
(1094522, 1094522)
 Asexpected for graphene-based systems, these induced magnetic moments interactferromagnetically or antiferromagnetically depending on the relative adsorptiongraphene sublattice, but the magnitude of the interactions are found tostrongly vary with the position of the H atoms relative to the edges.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Hydrogenated Graphene Nanoribbons for Spintronics|D. Soriano,F. Muñoz-Rojas,J. Fernández-Rossier,J. J. Palacios###
(1094602, 1094602)
 Asexpected for graphene-based systems, these induced magnetic moments interactferromagnetically or antiferromagnetically depending on the relative adsorptiongraphene sublattice, but the magnitude of the interactions are found tostrongly vary with the position of the H atoms relative to the edges.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Hydrogenated Graphene Nanoribbons for Spintronics|D. Soriano,F. Muñoz-Rojas,J. Fernández-Rossier,J. J. Palacios###
(1094680, 1094680)
 We alsocalculate, with the help of the Hubbard model, the transport properties ofhydrogenated armchair semiconducting graphene nanoribbons in the diluted regimeand show how the exchange coupling between H atoms can be exploited in thedesign of novel magnetoresistive devices.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Competing magnetic anisotropies in atomic-scale junctions|Alexander Thiess,Yuriy Mokrousov,Stefan Heinze###
(1095080, 1095080)
 Upon stretching monatomic chains of W, Ir, and Ptsuspended between two leads, we find the development of strong magnetism andlarge values of the magnetocrystalline anisotropy energy (MAE) of up to 30 meVper chain atom.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 5, 'd', 1],[62.0, 30, 'meV', 0]

Ir
###Competing magnetic anisotropies in atomic-scale junctions|Alexander Thiess,Yuriy Mokrousov,Stefan Heinze###
(1095083, 1095083)
 Upon stretching monatomic chains of W, Ir, and Ptsuspended between two leads, we find the development of strong magnetism andlarge values of the magnetocrystalline anisotropy energy (MAE) of up to 30 meVper chain atom.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 5, 'd', 1],[59.0, 30, 'meV', 0]

Pt
###Competing magnetic anisotropies in atomic-scale junctions|Alexander Thiess,Yuriy Mokrousov,Stefan Heinze###
(1095088, 1095088)
 Upon stretching monatomic chains of W, Ir, and Ptsuspended between two leads, we find the development of strong magnetism andlarge values of the magnetocrystalline anisotropy energy (MAE) of up to 30 meVper chain atom.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 5, 'd', 1],[54.0, 30, 'meV', 0]

Tb4LuSi3
###An anomalous butterfly-shaped magnetoresistance loop in an alloy, Tb4LuSi3|K. Mukherjee,Sitikantha D Das,Niharika Mohapatra,Kartik K Iyer,E. V. Sampathkumaran###
(1095337, 1095341)
An anomalous butterfly-shaped magnetoresistance loop in an alloy, Tb4LuSi3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.375,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(H)
###An anomalous butterfly-shaped magnetoresistance loop in an alloy, Tb4LuSi3|K. Mukherjee,Sitikantha D Das,Niharika Mohapatra,Kartik K Iyer,E. V. Sampathkumaran###
(1095348, 1095350)
 Magnetic-field (H) induced first-order magnetic transition and the assiciatedelectronic phase-separation phenomena are active topics of research inmagnetism.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###An anomalous butterfly-shaped magnetoresistance loop in an alloy, Tb4LuSi3|K. Mukherjee,Sitikantha D Das,Niharika Mohapatra,Kartik K Iyer,E. V. Sampathkumaran###
(1095477, 1095477)
 Magnetoresistance (MR) is a key property to probe these phenomenaand, in literature, a butterfly-shaped MR loop has been noted while cycling thefield, with the envelope curve lying below the virgin curve in MR versus Hplots of such materials.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tb4LuSi3
###An anomalous butterfly-shaped magnetoresistance loop in an alloy, Tb4LuSi3|K. Mukherjee,Sitikantha D Das,Niharika Mohapatra,Kartik K Iyer,E. V. Sampathkumaran###
(1095517, 1095521)
 Here, we report an opposite behavior of MR loop for analloy, Tb4LuSi3, at low temperatures (<<20 K) in the magnetically orderedstate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.375,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###An anomalous butterfly-shaped magnetoresistance loop in an alloy, Tb4LuSi3|K. Mukherjee,Sitikantha D Das,Niharika Mohapatra,Kartik K Iyer,E. V. Sampathkumaran###
(1095535, 1095535)
 Here, we report an opposite behavior of MR loop for analloy, Tb4LuSi3, at low temperatures (<<20 K) in the magnetically orderedstate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Se3
###Angular-dependent oscillations of the magnetoresistance in Bi_2Se_3 due to the three-dimensional bulk Fermi surface|Kazuma Eto,Zhi Ren,A. A. Taskin,Kouji Segawa,Yoichi Ando###
(1095693, 1095696)
Angular-dependent oscillations of the magnetoresistance in Bi2Se3 due to the three-dimensional bulk Fermi surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 5, 'x', 1],[71.0, -3, ',', 1]

Bi2Se3
###Angular-dependent oscillations of the magnetoresistance in Bi_2Se_3 due to the three-dimensional bulk Fermi surface|Kazuma Eto,Zhi Ren,A. A. Taskin,Kouji Segawa,Yoichi Ando###
(1095743, 1095746)
 We observed pronounced angular-dependent magnetoresistance (MR) oscillationsin a high-quality Bi2Se3 single crystal with the carrier density of 5x1018cm-3, which is a topological insulator with residual bulk carriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 5, 'x', 0],[21.0, -3, ',', 0]

Bi2Se3
###Angular-dependent oscillations of the magnetoresistance in Bi_2Se_3 due to the three-dimensional bulk Fermi surface|Kazuma Eto,Zhi Ren,A. A. Taskin,Kouji Segawa,Yoichi Ando###
(1095920, 1095923)
 Bycompletely elucidating the bulk oscillations, this result paves the way fordistinguishing the two-dimensional surface state in angular-dependent MRstudies in Bi2Se3 with much lower carrier density.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[159.0, 5, 'x', 2],[153.0, -3, ',', 2]

Fe
###Ab initio theory of galvanomagnetic phenomena in ferromagnetic metals and disordered alloys|Ilja Turek,Josef Kudrnovsky,Vaclav Drchal###
(1096517, 1096517)
 Thedeveloped formalism is applied to pure 3d transition metals (Fe, Co, Ni) and torandom Ni-based ferromagnetic alloys (Ni-Fe, Ni-Co, Ni-Mn).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 3, 'd', 0]

Co
###Ab initio theory of galvanomagnetic phenomena in ferromagnetic metals and disordered alloys|Ilja Turek,Josef Kudrnovsky,Vaclav Drchal###
(1096520, 1096520)
 Thedeveloped formalism is applied to pure 3d transition metals (Fe, Co, Ni) and torandom Ni-based ferromagnetic alloys (Ni-Fe, Ni-Co, Ni-Mn).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 3, 'd', 0]

Ni
###Ab initio theory of galvanomagnetic phenomena in ferromagnetic metals and disordered alloys|Ilja Turek,Josef Kudrnovsky,Vaclav Drchal###
(1096523, 1096523)
 Thedeveloped formalism is applied to pure 3d transition metals (Fe, Co, Ni) and torandom Ni-based ferromagnetic alloys (Ni-Fe, Ni-Co, Ni-Mn).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 3, 'd', 0]

Ni
###Ab initio theory of galvanomagnetic phenomena in ferromagnetic metals and disordered alloys|Ilja Turek,Josef Kudrnovsky,Vaclav Drchal###
(1096533, 1096533)
 Thedeveloped formalism is applied to pure 3d transition metals (Fe, Co, Ni) and torandom Ni-based ferromagnetic alloys (Ni-Fe, Ni-Co, Ni-Mn).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 3, 'd', 0]

Ni
###Ab initio theory of galvanomagnetic phenomena in ferromagnetic metals and disordered alloys|Ilja Turek,Josef Kudrnovsky,Vaclav Drchal###
(1096542, 1096542)
 Thedeveloped formalism is applied to pure 3d transition metals (Fe, Co, Ni) and torandom Ni-based ferromagnetic alloys (Ni-Fe, Ni-Co, Ni-Mn).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 3, 'd', 0]

Fe
###Ab initio theory of galvanomagnetic phenomena in ferromagnetic metals and disordered alloys|Ilja Turek,Josef Kudrnovsky,Vaclav Drchal###
(1096544, 1096544)
 Thedeveloped formalism is applied to pure 3d transition metals (Fe, Co, Ni) and torandom Ni-based ferromagnetic alloys (Ni-Fe, Ni-Co, Ni-Mn).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 3, 'd', 0]

Ni
###Ab initio theory of galvanomagnetic phenomena in ferromagnetic metals and disordered alloys|Ilja Turek,Josef Kudrnovsky,Vaclav Drchal###
(1096547, 1096547)
 Thedeveloped formalism is applied to pure 3d transition metals (Fe, Co, Ni) and torandom Ni-based ferromagnetic alloys (Ni-Fe, Ni-Co, Ni-Mn).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 3, 'd', 0]

Co
###Ab initio theory of galvanomagnetic phenomena in ferromagnetic metals and disordered alloys|Ilja Turek,Josef Kudrnovsky,Vaclav Drchal###
(1096549, 1096549)
 Thedeveloped formalism is applied to pure 3d transition metals (Fe, Co, Ni) and torandom Ni-based ferromagnetic alloys (Ni-Fe, Ni-Co, Ni-Mn).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 3, 'd', 0]

Ni
###Ab initio theory of galvanomagnetic phenomena in ferromagnetic metals and disordered alloys|Ilja Turek,Josef Kudrnovsky,Vaclav Drchal###
(1096552, 1096552)
 Thedeveloped formalism is applied to pure 3d transition metals (Fe, Co, Ni) and torandom Ni-based ferromagnetic alloys (Ni-Fe, Ni-Co, Ni-Mn).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 3, 'd', 0]

Mn
###Ab initio theory of galvanomagnetic phenomena in ferromagnetic metals and disordered alloys|Ilja Turek,Josef Kudrnovsky,Vaclav Drchal###
(1096554, 1096554)
 Thedeveloped formalism is applied to pure 3d transition metals (Fe, Co, Ni) and torandom Ni-based ferromagnetic alloys (Ni-Fe, Ni-Co, Ni-Mn).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 3, 'd', 0]

Ni
###Ab initio theory of galvanomagnetic phenomena in ferromagnetic metals and disordered alloys|Ilja Turek,Josef Kudrnovsky,Vaclav Drchal###
(1096582, 1096582)
 High values of theanisotropic magnetoresistance (AMR), found for Ni-rich alloys, are explained bya negligible disorder in the majority spin channel while a change of the signof the anomalous Hall effect (AHE) on alloying is interpreted as a band-fillingeffect without a direct relation to the high AMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 3, 'd', 1]

H
###Ab initio theory of galvanomagnetic phenomena in ferromagnetic metals and disordered alloys|Ilja Turek,Josef Kudrnovsky,Vaclav Drchal###
(1096637, 1096637)
 High values of theanisotropic magnetoresistance (AMR), found for Ni-rich alloys, are explained bya negligible disorder in the majority spin channel while a change of the signof the anomalous Hall effect (AHE) on alloying is interpreted as a band-fillingeffect without a direct relation to the high AMR.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 3, 'd', 1]

H
###Ab initio theory of galvanomagnetic phenomena in ferromagnetic metals and disordered alloys|Ilja Turek,Josef Kudrnovsky,Vaclav Drchal###
(1096693, 1096693)
 The influence of disorder onthe AHE<missing VAR> in concentrated alloys is investigated as well.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[183.0, 3, 'd', 2]

Er5Si3
###A first-order magnetic phase transition near 15 K with novel magnetic-field-induced effects in Er5Si3|Niharika Mohapatra,K. Mukherjee,Kartik K. Iyer,E. V. Sampathkumaran###
(1096748, 1096751)
A first-order magnetic phase transition near 15 K with novel magnetic-field-induced effects in Er5Si3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.375,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.625,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 15, 'K', 0],[105.0, 35, 'K', 2],[117.0, 15, 'K', 2],[186.0, 15, 'K', 4]

Er5Si3
###A first-order magnetic phase transition near 15 K with novel magnetic-field-induced effects in Er5Si3|Niharika Mohapatra,K. Mukherjee,Kartik K. Iyer,E. V. Sampathkumaran###
(1096777, 1096780)
 We present magnetic characterization of a binary rare-earth intermetalliccompound Er5Si3, crystallizing in Mn5Si3-type hexagonal structure, throughmagnetization, heat-capacity, electrical resistivity, and magnetoresistancemeasurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.375,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.625,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 15, 'K', 1],[76.0, 35, 'K', 1],[88.0, 15, 'K', 1],[157.0, 15, 'K', 3]

Mn5Si3
###A first-order magnetic phase transition near 15 K with novel magnetic-field-induced effects in Er5Si3|Niharika Mohapatra,K. Mukherjee,Kartik K. Iyer,E. V. Sampathkumaran###
(1096787, 1096790)
 We present magnetic characterization of a binary rare-earth intermetalliccompound Er5Si3, crystallizing in Mn5Si3-type hexagonal structure, throughmagnetization, heat-capacity, electrical resistivity, and magnetoresistancemeasurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.375,0,0,0,0,0,0,0,0,0,0,0.625,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 15, 'K', 1],[66.0, 35, 'K', 1],[78.0, 15, 'K', 1],[147.0, 15, 'K', 3]

Nb
###Edge superconducting state in Nb thin film with rectangular arrays of antidots|W. J. Zhang,S. K. He,H. F. Liu,G. M. Xue,H. Xiao,B. H. Li,Z. C. Wen,X. F. Han,S. P. Zhao,C. Z. Gu,X. G. Qiu,Victor V. Moshchalkov###
(1097085, 1097085)
Edge superconducting state in Nb thin film with rectangular arrays of antidots.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[250.0, 2, ',', 4]

Nb
###Edge superconducting state in Nb thin film with rectangular arrays of antidots|W. J. Zhang,S. K. He,H. F. Liu,G. M. Xue,H. Xiao,B. H. Li,Z. C. Wen,X. F. Han,S. P. Zhao,C. Z. Gu,X. G. Qiu,Victor V. Moshchalkov###
(1097104, 1097104)
 Superconducting Nb thin films with rectangular arrays of submicron antidotshave been systemically investigated by transport measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[231.0, 2, ',', 3]

In
###Edge superconducting state in Nb thin film with rectangular arrays of antidots|W. J. Zhang,S. K. He,H. F. Liu,G. M. Xue,H. Xiao,B. H. Li,Z. C. Wen,X. F. Han,S. P. Zhao,C. Z. Gu,X. G. Qiu,Victor V. Moshchalkov###
(1097138, 1097138)
 In low fields,the magnetoresistance curves demonstrate well-defined dips at integral andrational numbers of flux quanta per unit cell, which corresponds to asuperconducting wire network-like regime.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[197.0, 2, ',', 2]

In
###Edge superconducting state in Nb thin film with rectangular arrays of antidots|W. J. Zhang,S. K. He,H. F. Liu,G. M. Xue,H. Xiao,B. H. Li,Z. C. Wen,X. F. Han,S. P. Zhao,C. Z. Gu,X. G. Qiu,Victor V. Moshchalkov###
(1097272, 1097272)
 In higher fields, a crossover behavior from theinterstitial sublattice state to a single-loop-like state is observed,characterized by oscillations with a period of Phi0/pi r<missing VAR>eff2,originating from the existence of edge superconducting states with a sizer<missing VAR>eff around the antidots.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 2, ',', 0]

C
###Investigation on organic magnetoconductance based on polaron-bipolaron transition|W. Qin,S. Yin,K. Gao,S. J. Xie###
(1097409, 1097409)
 We explore the magnetoresistance (M<missing VAR>C) effect in an organic semiconductordevice based on the magnetic field related bipolaron formation.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Investigation on organic magnetoconductance based on polaron-bipolaron transition|W. Qin,S. Yin,K. Gao,S. J. Xie###
(1097591, 1097591)
 By supposing the different mobility ofpolarons from that of bipolarons, we obtain the M<missing VAR>C in an organic semiconductordevice.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Investigation on organic magnetoconductance based on polaron-bipolaron transition|W. Qin,S. Yin,K. Gao,S. J. Xie###
(1097640, 1097640)
 It is predicated that a maximum M<missing VAR>C appears at a suitable branching ratioof bipolarons.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Effect of the attachment of ferromagnetic contacts on the conductivity and giant magnetoresistance of graphene nanoribbons|S. Krompiewski###
(1097972, 1097972)
 As regards the giant magnetoresistancecoefficient, however, the situation is exactly opposite, since spin- splittingeffects are more pronounced in the lower conductive side-contacted setups.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sb
###Heat transport in magnetic fields by quantum spin liquid in the organic insulators EtMe3Sb[Pd(dmit)2]2 and κ-(BEDT-TTF)2Cu2(CN)3|V. R. Shaginyan,A. Z. Msezane,K. G. Popov,G. S. Japaridze,V. A. Khodel###
(1098068, 1098068)
Heat transport in magnetic fields by quantum spin liquid in the organic insulators EtMe3Sb[Pd(dmit)2]2 and -(BEDT-TTF)2Cu2(CN)3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pd
###Heat transport in magnetic fields by quantum spin liquid in the organic insulators EtMe3Sb[Pd(dmit)2]2 and κ-(BEDT-TTF)2Cu2(CN)3|V. R. Shaginyan,A. Z. Msezane,K. G. Popov,G. S. Japaridze,V. A. Khodel###
(1098070, 1098070)
Heat transport in magnetic fields by quantum spin liquid in the organic insulators EtMe3Sb[Pd(dmit)2]2 and -(BEDT-TTF)2Cu2(CN)3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Heat transport in magnetic fields by quantum spin liquid in the organic insulators EtMe3Sb[Pd(dmit)2]2 and κ-(BEDT-TTF)2Cu2(CN)3|V. R. Shaginyan,A. Z. Msezane,K. G. Popov,G. S. Japaridze,V. A. Khodel###
(1098082, 1098082)
Heat transport in magnetic fields by quantum spin liquid in the organic insulators EtMe3Sb[Pd(dmit)2]2 and -(BEDT-TTF)2Cu2(CN)3.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Heat transport in magnetic fields by quantum spin liquid in the organic insulators EtMe3Sb[Pd(dmit)2]2 and κ-(BEDT-TTF)2Cu2(CN)3|V. R. Shaginyan,A. Z. Msezane,K. G. Popov,G. S. Japaridze,V. A. Khodel###
(1098089, 1098089)
Heat transport in magnetic fields by quantum spin liquid in the organic insulators EtMe3Sb[Pd(dmit)2]2 and -(BEDT-TTF)2Cu2(CN)3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu2(CN)3
###Heat transport in magnetic fields by quantum spin liquid in the organic insulators EtMe3Sb[Pd(dmit)2]2 and κ-(BEDT-TTF)2Cu2(CN)3|V. R. Shaginyan,A. Z. Msezane,K. G. Popov,G. S. Japaridze,V. A. Khodel###
(1098092, 1098098)
Heat transport in magnetic fields by quantum spin liquid in the organic insulators EtMe3Sb[Pd(dmit)2]2 and -(BEDT-TTF)2Cu2(CN)3.
Featurization terminated normally.
0,0,0,0,0,0.375,0.375,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sb
###Heat transport in magnetic fields by quantum spin liquid in the organic insulators EtMe3Sb[Pd(dmit)2]2 and κ-(BEDT-TTF)2Cu2(CN)3|V. R. Shaginyan,A. Z. Msezane,K. G. Popov,G. S. Japaridze,V. A. Khodel###
(1098241, 1098241)
 Weemploy a model of strongly correlated quantum spin liquid located near thefermion condensation phase transition to analyze the exciting measurements ofthe low-temperature thermal conductivity in magnetic fields collected on theorganic insulators EtMe3Sb[Pd(dmit)2]2 and kappa-(BEDT-TTF)2Cu2(CN)3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pd
###Heat transport in magnetic fields by quantum spin liquid in the organic insulators EtMe3Sb[Pd(dmit)2]2 and κ-(BEDT-TTF)2Cu2(CN)3|V. R. Shaginyan,A. Z. Msezane,K. G. Popov,G. S. Japaridze,V. A. Khodel###
(1098243, 1098243)
 Weemploy a model of strongly correlated quantum spin liquid located near thefermion condensation phase transition to analyze the exciting measurements ofthe low-temperature thermal conductivity in magnetic fields collected on theorganic insulators EtMe3Sb[Pd(dmit)2]2 and kappa-(BEDT-TTF)2Cu2(CN)3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Heat transport in magnetic fields by quantum spin liquid in the organic insulators EtMe3Sb[Pd(dmit)2]2 and κ-(BEDT-TTF)2Cu2(CN)3|V. R. Shaginyan,A. Z. Msezane,K. G. Popov,G. S. Japaridze,V. A. Khodel###
(1098256, 1098256)
 Weemploy a model of strongly correlated quantum spin liquid located near thefermion condensation phase transition to analyze the exciting measurements ofthe low-temperature thermal conductivity in magnetic fields collected on theorganic insulators EtMe3Sb[Pd(dmit)2]2 and kappa-(BEDT-TTF)2Cu2(CN)3.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Heat transport in magnetic fields by quantum spin liquid in the organic insulators EtMe3Sb[Pd(dmit)2]2 and κ-(BEDT-TTF)2Cu2(CN)3|V. R. Shaginyan,A. Z. Msezane,K. G. Popov,G. S. Japaridze,V. A. Khodel###
(1098263, 1098263)
 Weemploy a model of strongly correlated quantum spin liquid located near thefermion condensation phase transition to analyze the exciting measurements ofthe low-temperature thermal conductivity in magnetic fields collected on theorganic insulators EtMe3Sb[Pd(dmit)2]2 and kappa-(BEDT-TTF)2Cu2(CN)3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu2(CN)3
###Heat transport in magnetic fields by quantum spin liquid in the organic insulators EtMe3Sb[Pd(dmit)2]2 and κ-(BEDT-TTF)2Cu2(CN)3|V. R. Shaginyan,A. Z. Msezane,K. G. Popov,G. S. Japaridze,V. A. Khodel###
(1098266, 1098272)
 Weemploy a model of strongly correlated quantum spin liquid located near thefermion condensation phase transition to analyze the exciting measurements ofthe low-temperature thermal conductivity in magnetic fields collected on theorganic insulators EtMe3Sb[Pd(dmit)2]2 and kappa-(BEDT-TTF)2Cu2(CN)3.
Featurization terminated normally.
0,0,0,0,0,0.375,0.375,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SmB6
###Crossover of Magnetoresistance from Fourfold to Twofold Symmetry in SmB6 Single Crystal, a topological Kondo insulator|Zengji Yue,Xiaolin Wang,Duanliang Wang,Jiyang Wang,Dimi Culcer,Shixue Dou###
(1098420, 1098422)
Crossover of Magnetoresistance from Fourfold to Twofold Symmetry in SmB6 Single Crystal, a topological Kondo insulator.
Featurization terminated normally.
0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 13, 'T', 2],[154.0, 8, 'K', 3],[204.0, 2.3, 'K', 4]

SmB6
###Crossover of Magnetoresistance from Fourfold to Twofold Symmetry in SmB6 Single Crystal, a topological Kondo insulator|Zengji Yue,Xiaolin Wang,Duanliang Wang,Jiyang Wang,Dimi Culcer,Shixue Dou###
(1098521, 1098523)
 Here, we report angle-dependent c<missing VAR>-axismagnetoresistance (MR) oscillations in a Kondo insulator, SmB6 single crystal,in a magnetic field of up to 13 T rotated in the ab-plane.
Featurization terminated normally.
0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 13, 'T', 0],[53.0, 8, 'K', 1],[103.0, 2.3, 'K', 2]

(C4)
###Crossover of Magnetoresistance from Fourfold to Twofold Symmetry in SmB6 Single Crystal, a topological Kondo insulator|Zengji Yue,Xiaolin Wang,Duanliang Wang,Jiyang Wang,Dimi Culcer,Shixue Dou###
(1098592, 1098595)
 Four-fold symmetricMR oscillations are first observed above 8 K, which result from the four-fold(C4) degeneracy of the bulk Fermi surface of SmB6.
Featurization successful!
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 13, 'T', 1],[16.0, 8, 'K', 0],[31.0, 2.3, 'K', 1]

SmB6
###Crossover of Magnetoresistance from Fourfold to Twofold Symmetry in SmB6 Single Crystal, a topological Kondo insulator|Zengji Yue,Xiaolin Wang,Duanliang Wang,Jiyang Wang,Dimi Culcer,Shixue Dou###
(1098611, 1098613)
 Four-fold symmetricMR oscillations are first observed above 8 K, which result from the four-fold(C4) degeneracy of the bulk Fermi surface of SmB6.
Featurization terminated normally.
0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 13, 'T', 1],[35.0, 8, 'K', 0],[13.0, 2.3, 'K', 1]

C4
###Crossover of Magnetoresistance from Fourfold to Twofold Symmetry in SmB6 Single Crystal, a topological Kondo insulator|Zengji Yue,Xiaolin Wang,Duanliang Wang,Jiyang Wang,Dimi Culcer,Shixue Dou###
(1098631, 1098632)
 With decreasing temperaturedown to 2.3 K, the C4 symmetry of the MR oscillations gradually weakens and C2symmetry appears.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 13, 'T', 2],[55.0, 8, 'K', 1],[5.0, 2.3, 'K', 0]

C2
###Crossover of Magnetoresistance from Fourfold to Twofold Symmetry in SmB6 Single Crystal, a topological Kondo insulator|Zengji Yue,Xiaolin Wang,Duanliang Wang,Jiyang Wang,Dimi Culcer,Shixue Dou###
(1098651, 1098652)
 With decreasing temperaturedown to 2.3 K, the C4 symmetry of the MR oscillations gradually weakens and C2symmetry appears.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 13, 'T', 2],[75.0, 8, 'K', 1],[25.0, 2.3, 'K', 0]

SmB6
###Crossover of Magnetoresistance from Fourfold to Twofold Symmetry in SmB6 Single Crystal, a topological Kondo insulator|Zengji Yue,Xiaolin Wang,Duanliang Wang,Jiyang Wang,Dimi Culcer,Shixue Dou###
(1098746, 1098748)
 Our experimental observations shed new light on themetallic surface states and nematic states in the Kondo insulator SmB6.
Featurization terminated normally.
0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[202.0, 13, 'T', 4],[170.0, 8, 'K', 3],[120.0, 2.3, 'K', 2]

In
###Angular dependence of magnetoresistance in strongly anisotropic quasi-two-dimensional metals for various Landau-level shapes|Taras I. Mogilyuk,Pavel D. Grigoriev###
(1098879, 1098879)
 In particular, the amplitude of angularmagnetoresistance oscillations (AMRO) is much stronger for the Gaussian LLshape than for the Lorentzian.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 10, 'T', 3]

O
###Angular dependence of magnetoresistance in strongly anisotropic quasi-two-dimensional metals for various Landau-level shapes|Taras I. Mogilyuk,Pavel D. Grigoriev###
(1098901, 1098901)
 In particular, the amplitude of angularmagnetoresistance oscillations (AMRO) is much stronger for the Gaussian LLshape than for the Lorentzian.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 10, 'T', 3]

O
###Angular dependence of magnetoresistance in strongly anisotropic quasi-two-dimensional metals for various Landau-level shapes|Taras I. Mogilyuk,Pavel D. Grigoriev###
(1098984, 1098984)
 AMRO and Zeeman energy splitting lead to a spin current.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 10, 'T', 1]

O
###Angular dependence of magnetoresistance in strongly anisotropic quasi-two-dimensional metals for various Landau-level shapes|Taras I. Mogilyuk,Pavel D. Grigoriev###
(1099125, 1099125)
 The spin current hasstrong angular oscillations, which are phase-shifted as compared to the usualAMRO.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 10, 'T', 1]

S
###Spin-transfer torque switching below 20 kA/cm$^2$ in perpendicular magnetic tunnel junctions|Johannes Christian Leutenantsmeyer,Marvin Walter,Steffen Wittrock,Patrick Peretzki,Henning Schuhmann,Michael Seibt,Markus Münzenberg###
(1099180, 1099180)
 We demonstrate the reduction of critical spin-transfer torque (STT) switchingcurrents in Co-Fe-B/MgO based magnetic tunnel junctions (MTJ) withperpendicular magnetization anisotropy (PM<missing VAR>A).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 20, 'kA', 1],[76.0, 64, '%', 1],[80.0, 4, 'monolayer', 1],[174.0, 2, ',', 3],[182.0, 9, 'kA', 3],[185.0, 2, ',', 3]

Co
###Spin-transfer torque switching below 20 kA/cm$^2$ in perpendicular magnetic tunnel junctions|Johannes Christian Leutenantsmeyer,Marvin Walter,Steffen Wittrock,Patrick Peretzki,Henning Schuhmann,Michael Seibt,Markus Münzenberg###
(1099192, 1099192)
 We demonstrate the reduction of critical spin-transfer torque (STT) switchingcurrents in Co-Fe-B/MgO based magnetic tunnel junctions (MTJ) withperpendicular magnetization anisotropy (PM<missing VAR>A).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 20, 'kA', 1],[64.0, 64, '%', 1],[68.0, 4, 'monolayer', 1],[162.0, 2, ',', 3],[170.0, 9, 'kA', 3],[173.0, 2, ',', 3]

Fe
###Spin-transfer torque switching below 20 kA/cm$^2$ in perpendicular magnetic tunnel junctions|Johannes Christian Leutenantsmeyer,Marvin Walter,Steffen Wittrock,Patrick Peretzki,Henning Schuhmann,Michael Seibt,Markus Münzenberg###
(1099194, 1099194)
 We demonstrate the reduction of critical spin-transfer torque (STT) switchingcurrents in Co-Fe-B/MgO based magnetic tunnel junctions (MTJ) withperpendicular magnetization anisotropy (PM<missing VAR>A).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 20, 'kA', 1],[62.0, 64, '%', 1],[66.0, 4, 'monolayer', 1],[160.0, 2, ',', 3],[168.0, 9, 'kA', 3],[171.0, 2, ',', 3]

B/MgO
###Spin-transfer torque switching below 20 kA/cm$^2$ in perpendicular magnetic tunnel junctions|Johannes Christian Leutenantsmeyer,Marvin Walter,Steffen Wittrock,Patrick Peretzki,Henning Schuhmann,Michael Seibt,Markus Münzenberg###
(1099196, 1099199)
 We demonstrate the reduction of critical spin-transfer torque (STT) switchingcurrents in Co-Fe-B/MgO based magnetic tunnel junctions (MTJ) withperpendicular magnetization anisotropy (PM<missing VAR>A).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[51.0, 20, 'kA', 1],[57.0, 64, '%', 1],[61.0, 4, 'monolayer', 1],[155.0, 2, ',', 3],[163.0, 9, 'kA', 3],[166.0, 2, ',', 3]

P
###Spin-transfer torque switching below 20 kA/cm$^2$ in perpendicular magnetic tunnel junctions|Johannes Christian Leutenantsmeyer,Marvin Walter,Steffen Wittrock,Patrick Peretzki,Henning Schuhmann,Michael Seibt,Markus Münzenberg###
(1099225, 1099225)
 We demonstrate the reduction of critical spin-transfer torque (STT) switchingcurrents in Co-Fe-B/MgO based magnetic tunnel junctions (MTJ) withperpendicular magnetization anisotropy (PM<missing VAR>A).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 20, 'kA', 1],[31.0, 64, '%', 1],[35.0, 4, 'monolayer', 1],[129.0, 2, ',', 3],[137.0, 9, 'kA', 3],[140.0, 2, ',', 3]

In
###Spin-transfer torque switching below 20 kA/cm$^2$ in perpendicular magnetic tunnel junctions|Johannes Christian Leutenantsmeyer,Marvin Walter,Steffen Wittrock,Patrick Peretzki,Henning Schuhmann,Michael Seibt,Markus Münzenberg###
(1099275, 1099275)
 In this paper, the reduction of the critical switching currentdensity is studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 20, 'kA', 3],[19.0, 64, '%', 1],[15.0, 4, 'monolayer', 1],[79.0, 2, ',', 1],[87.0, 9, 'kA', 1],[90.0, 2, ',', 1]

C
###Spin-transfer torque switching below 20 kA/cm$^2$ in perpendicular magnetic tunnel junctions|Johannes Christian Leutenantsmeyer,Marvin Walter,Steffen Wittrock,Patrick Peretzki,Henning Schuhmann,Michael Seibt,Markus Münzenberg###
(1099319, 1099319)
 By optimizing the applied bias field during D<missing VAR>C-STTmeasurements, ultra low critical switching current densities of less than 20k<missing VAR>A/cm2, even down to 9 kA/cm2, are found.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[174.0, 20, 'kA', 4],[63.0, 64, '%', 2],[59.0, 4, 'monolayer', 2],[35.0, 2, ',', 0],[43.0, 9, 'kA', 0],[46.0, 2, ',', 0]

S
###Spin-transfer torque switching below 20 kA/cm$^2$ in perpendicular magnetic tunnel junctions|Johannes Christian Leutenantsmeyer,Marvin Walter,Steffen Wittrock,Patrick Peretzki,Henning Schuhmann,Michael Seibt,Markus Münzenberg###
(1099321, 1099321)
 By optimizing the applied bias field during D<missing VAR>C-STTmeasurements, ultra low critical switching current densities of less than 20k<missing VAR>A/cm2, even down to 9 kA/cm2, are found.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[176.0, 20, 'kA', 4],[65.0, 64, '%', 2],[61.0, 4, 'monolayer', 2],[33.0, 2, ',', 0],[41.0, 9, 'kA', 0],[44.0, 2, ',', 0]

LaAlO3
###Magnetic field tuned superconductor-to-insulator transition at the LaAlO$_3$ /SrTiO$_3$ interface|M. M. Mehta,D. A. Dikin,C. W. Bark,S. Ryu,C. M. Folkman,C. B. Eom,V. Chandrasekhar###
(1099453, 1099456)
Magnetic field tuned superconductor-to-insulator transition at the LaAlO3 /SrTiO3 interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 3, ',', 3]

SrTiO3
###Magnetic field tuned superconductor-to-insulator transition at the LaAlO$_3$ /SrTiO$_3$ interface|M. M. Mehta,D. A. Dikin,C. W. Bark,S. Ryu,C. M. Folkman,C. B. Eom,V. Chandrasekhar###
(1099459, 1099462)
Magnetic field tuned superconductor-to-insulator transition at the LaAlO3 /SrTiO3 interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 3, ',', 3]

SI
###Magnetic field tuned superconductor-to-insulator transition at the LaAlO$_3$ /SrTiO$_3$ interface|M. M. Mehta,D. A. Dikin,C. W. Bark,S. Ryu,C. M. Folkman,C. B. Eom,V. Chandrasekhar###
(1099495, 1099496)
 We present a study of the magnetic field tuned superconductor-to-insulatortransition (SIT) in the electron gas that forms at the LaAlO3/SrTiO3interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 3, ',', 2]

LaAlO3/SrTiO3
###Magnetic field tuned superconductor-to-insulator transition at the LaAlO$_3$ /SrTiO$_3$ interface|M. M. Mehta,D. A. Dikin,C. W. Bark,S. Ryu,C. M. Folkman,C. B. Eom,V. Chandrasekhar###
(1099516, 1099524)
 We present a study of the magnetic field tuned superconductor-to-insulatortransition (SIT) in the electron gas that forms at the LaAlO3/SrTiO3interface.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[92.0, 3, ',', 2]

SI
###Magnetic field tuned superconductor-to-insulator transition at the LaAlO$_3$ /SrTiO$_3$ interface|M. M. Mehta,D. A. Dikin,C. W. Bark,S. Ryu,C. M. Folkman,C. B. Eom,V. Chandrasekhar###
(1099574, 1099575)
 We find that the magnetic field induces a transition into a weaklyinsulating state, as is observed for the electrostatically tuned SIT<missing VAR> at thisinterface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 3, ',', 1]

La0.7Sr0.3MnO3
###Large lattice distortions associated with the magnetic transition in La0.7Sr0.3MnO3|F. Weber,D. Argyriou,O. Prokhnenko,D. Reznik###
(1099773, 1099779)
Large lattice distortions associated with the magnetic transition in La0.7Sr0.3MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Large lattice distortions associated with the magnetic transition in La0.7Sr0.3MnO3|F. Weber,D. Argyriou,O. Prokhnenko,D. Reznik###
(1099787, 1099787)
 Colossal magnetoresistance (CMR) is associated with the phase transition froma metallic ferromagnetic to insulating paramagnetic phase, which can becontrolled by an applied magnetic field.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###Large lattice distortions associated with the magnetic transition in La0.7Sr0.3MnO3|F. Weber,D. Argyriou,O. Prokhnenko,D. Reznik###
(1099913, 1099913)
 Theories based on local physics predict that the magnitude ofthe resistivity jump at Tc is determined by how much, on average, the amplitudeof these distortions increases at the phase transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.7Sr0.3MnO3
###Large lattice distortions associated with the magnetic transition in La0.7Sr0.3MnO3|F. Weber,D. Argyriou,O. Prokhnenko,D. Reznik###
(1099975, 1099981)
 Using neutronscattering, we measured the average distortion amplitude in La0.7Sr0.3MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###Large lattice distortions associated with the magnetic transition in La0.7Sr0.3MnO3|F. Weber,D. Argyriou,O. Prokhnenko,D. Reznik###
(1100000, 1100000)
Surprisingly, its increase from below to above Tc is just as large as in othermanganites, which have a much larger resistivity jump.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Large lattice distortions associated with the magnetic transition in La0.7Sr0.3MnO3|F. Weber,D. Argyriou,O. Prokhnenko,D. Reznik###
(1100050, 1100050)
 This result suggeststhat the strength of CMR is determined not by the size of distortions, but bytheir cooperative nature specific to each compound.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Large lattice distortions associated with the magnetic transition in La0.7Sr0.3MnO3|F. Weber,D. Argyriou,O. Prokhnenko,D. Reznik###
(1100133, 1100133)
 Existing theories need tobe extended to include correlations between different unit cells to explain andpredict the strength of CMR.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PdPt/Y3Fe5O12
###Tuning Magnetotransport in PdPt/Y3Fe5O12: Effects of magnetic proximity and spin orbital coupling|X. Zhou,L. Ma,Z. Shi,S. M. Zhou###
(1100152, 1100160)
Tuning Magnetotransport in PdPt/Y3Fe5O12 Effects of magnetic proximity and spin orbital coupling.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

C
###Tuning Magnetotransport in PdPt/Y3Fe5O12: Effects of magnetic proximity and spin orbital coupling|X. Zhou,L. Ma,Z. Shi,S. M. Zhou###
(1100203, 1100203)
 Anisotropic magnetoresistance (AMR) ratio and anomalous Hall conductivity(AHC) in PdPt/Y3Fe5O12 (YIG) system are tuned significantly by spinorbital coupling strength xi through varying the Pt concentration.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PdPt/Y3Fe5O12
###Tuning Magnetotransport in PdPt/Y3Fe5O12: Effects of magnetic proximity and spin orbital coupling|X. Zhou,L. Ma,Z. Shi,S. M. Zhou###
(1100208, 1100216)
 Anisotropic magnetoresistance (AMR) ratio and anomalous Hall conductivity(AHC) in PdPt/Y3Fe5O12 (YIG) system are tuned significantly by spinorbital coupling strength xi through varying the Pt concentration.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

YI
###Tuning Magnetotransport in PdPt/Y3Fe5O12: Effects of magnetic proximity and spin orbital coupling|X. Zhou,L. Ma,Z. Shi,S. M. Zhou###
(1100219, 1100220)
 Anisotropic magnetoresistance (AMR) ratio and anomalous Hall conductivity(AHC) in PdPt/Y3Fe5O12 (YIG) system are tuned significantly by spinorbital coupling strength xi through varying the Pt concentration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Tuning Magnetotransport in PdPt/Y3Fe5O12: Effects of magnetic proximity and spin orbital coupling|X. Zhou,L. Ma,Z. Shi,S. M. Zhou###
(1100251, 1100251)
 Anisotropic magnetoresistance (AMR) ratio and anomalous Hall conductivity(AHC) in PdPt/Y3Fe5O12 (YIG) system are tuned significantly by spinorbital coupling strength xi through varying the Pt concentration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt/YI
###Tuning Magnetotransport in PdPt/Y3Fe5O12: Effects of magnetic proximity and spin orbital coupling|X. Zhou,L. Ma,Z. Shi,S. M. Zhou###
(1100261, 1100264)
 For bothPt/YIG<missing VAR> and Pd/YIG<missing VAR>, the maximal AMR ratio is located at temperatures for themaximal susceptibility of paramagnetic Pt and Pd metals.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Pd/YI
###Tuning Magnetotransport in PdPt/Y3Fe5O12: Effects of magnetic proximity and spin orbital coupling|X. Zhou,L. Ma,Z. Shi,S. M. Zhou###
(1100269, 1100272)
 For bothPt/YIG<missing VAR> and Pd/YIG<missing VAR>, the maximal AMR ratio is located at temperatures for themaximal susceptibility of paramagnetic Pt and Pd metals.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Pt
###Tuning Magnetotransport in PdPt/Y3Fe5O12: Effects of magnetic proximity and spin orbital coupling|X. Zhou,L. Ma,Z. Shi,S. M. Zhou###
(1100307, 1100307)
 For bothPt/YIG<missing VAR> and Pd/YIG<missing VAR>, the maximal AMR ratio is located at temperatures for themaximal susceptibility of paramagnetic Pt and Pd metals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pd
###Tuning Magnetotransport in PdPt/Y3Fe5O12: Effects of magnetic proximity and spin orbital coupling|X. Zhou,L. Ma,Z. Shi,S. M. Zhou###
(1100311, 1100311)
 For bothPt/YIG<missing VAR> and Pd/YIG<missing VAR>, the maximal AMR ratio is located at temperatures for themaximal susceptibility of paramagnetic Pt and Pd metals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HC
###Tuning Magnetotransport in PdPt/Y3Fe5O12: Effects of magnetic proximity and spin orbital coupling|X. Zhou,L. Ma,Z. Shi,S. M. Zhou###
(1100319, 1100320)
 The AHC and ordinaryHall effect both change the sign with temperature for Pt-rich system and viceversa for Pd-rich system.
Featurization terminated normally.
0.5,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Tuning Magnetotransport in PdPt/Y3Fe5O12: Effects of magnetic proximity and spin orbital coupling|X. Zhou,L. Ma,Z. Shi,S. M. Zhou###
(1100345, 1100345)
 The AHC and ordinaryHall effect both change the sign with temperature for Pt-rich system and viceversa for Pd-rich system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pd
###Tuning Magnetotransport in PdPt/Y3Fe5O12: Effects of magnetic proximity and spin orbital coupling|X. Zhou,L. Ma,Z. Shi,S. M. Zhou###
(1100360, 1100360)
 The AHC and ordinaryHall effect both change the sign with temperature for Pt-rich system and viceversa for Pd-rich system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Tuning Magnetotransport in PdPt/Y3Fe5O12: Effects of magnetic proximity and spin orbital coupling|X. Zhou,L. Ma,Z. Shi,S. M. Zhou###
(1100386, 1100386)
 The present results ambiguously evidence the spinpolarization of Pt and Pd atoms in contact with YIG<missing VAR> layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pd
###Tuning Magnetotransport in PdPt/Y3Fe5O12: Effects of magnetic proximity and spin orbital coupling|X. Zhou,L. Ma,Z. Shi,S. M. Zhou###
(1100390, 1100390)
 The present results ambiguously evidence the spinpolarization of Pt and Pd atoms in contact with YIG<missing VAR> layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YI
###Tuning Magnetotransport in PdPt/Y3Fe5O12: Effects of magnetic proximity and spin orbital coupling|X. Zhou,L. Ma,Z. Shi,S. M. Zhou###
(1100400, 1100401)
 The present results ambiguously evidence the spinpolarization of Pt and Pd atoms in contact with YIG<missing VAR> layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Tuning Magnetotransport in PdPt/Y3Fe5O12: Effects of magnetic proximity and spin orbital coupling|X. Zhou,L. Ma,Z. Shi,S. M. Zhou###
(1100434, 1100434)
 The globalcurvature near the Fermi surface is suggested to change with the Ptconcentration and temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2.15Sr1.9CuO6
###Low anisotropy of the upper critical field in a strongly anisotropic layered cuprate: Evidence for paramagnetically limited superconductivity|S. O. Katterwe,Th. Jacobs,A. Maljuk,V. M. Krasnov###
(1100817, 1100823)
 We study angular-dependent magnetoresistance in a low Tc layered cuprateBi2.15Sr1.9CuO6delta.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5429864253393665,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.09049773755656108,0,0,0,0,0,0,0,0,0.17194570135746604,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1945701357466063,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 4, 'K', 1],[167.0, 2, ',', 3],[195.0, 300.0, 'We', 3]

H
###Low anisotropy of the upper critical field in a strongly anisotropic layered cuprate: Evidence for paramagnetically limited superconductivity|S. O. Katterwe,Th. Jacobs,A. Maljuk,V. M. Krasnov###
(1100874, 1100874)
 The low Tc  4 K allows completesuppression of superconductivity by modest magnetic fields and facilitateaccurate analysis of the upper critical field Hc<missing VAR>2.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 4, 'K', 0],[116.0, 2, ',', 2],[144.0, 300.0, 'We', 2]

H
###Low anisotropy of the upper critical field in a strongly anisotropic layered cuprate: Evidence for paramagnetically limited superconductivity|S. O. Katterwe,Th. Jacobs,A. Maljuk,V. M. Krasnov###
(1100932, 1100932)
 We observe an universalexponential decay of fluctuation conductivity in a broad range of temperaturesabove Tc and propose a new method for extraction of Hc<missing VAR>2(T) from thescaling analysis of the fluctuation conductivity at T>Tc.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 4, 'K', 1],[58.0, 2, ',', 1],[86.0, 300.0, 'We', 1]

H
###Low anisotropy of the upper critical field in a strongly anisotropic layered cuprate: Evidence for paramagnetically limited superconductivity|S. O. Katterwe,Th. Jacobs,A. Maljuk,V. M. Krasnov###
(1100983, 1100983)
 Our main result isobservation of a surprisingly low Hc<missing VAR>2 anisotropy  2, which is muchsmaller than the effective mass anisotropy of the material  300. We show thatthe anisotropy is decreasing with increasing field and saturates at a smallvalue when the field reaches the paramagnetic limit.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 4, 'K', 2],[7.0, 2, ',', 0],[35.0, 300.0, 'We', 0]

GaAs/AlGaAs
###Colossal negative magnetoresistance in a 2D electron gas|Q. Shi,P. D. Martin,Q. A. Ebner,M. A. Zudov,L. N. Pfeiffer,K. W. West###
(1101157, 1101162)
 We report on a colossal negative magnetoresistance (MR) in GaAs/AlGaAsquantum well which, at low temperatures, is manifested by a drop of theresistivity by more than an order of magnitude at a magnetic field B approx1 kG.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[28.0, 2, 'D', 1],[179.0, 1, 'to', 2],[180.0, 30, 'K', 2]

B
###Colossal negative magnetoresistance in a 2D electron gas|Q. Shi,P. D. Martin,Q. A. Ebner,M. A. Zudov,L. N. Pfeiffer,K. W. West###
(1101218, 1101218)
 We report on a colossal negative magnetoresistance (MR) in GaAs/AlGaAsquantum well which, at low temperatures, is manifested by a drop of theresistivity by more than an order of magnitude at a magnetic field B approx1 kG.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 2, 'D', 1],[123.0, 1, 'to', 2],[124.0, 30, 'K', 2]

In
###Colossal negative magnetoresistance in a 2D electron gas|Q. Shi,P. D. Martin,Q. A. Ebner,M. A. Zudov,L. N. Pfeiffer,K. W. West###
(1101229, 1101229)
 In contrast to MR effects discussed earlier, the MR reported here is notparabolic, even at small B, and persists to much higher in-plane magneticfields and temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 2, 'D', 2],[112.0, 1, 'to', 1],[113.0, 30, 'K', 1]

B
###Colossal negative magnetoresistance in a 2D electron gas|Q. Shi,P. D. Martin,Q. A. Ebner,M. A. Zudov,L. N. Pfeiffer,K. W. West###
(1101268, 1101268)
 In contrast to MR effects discussed earlier, the MR reported here is notparabolic, even at small B, and persists to much higher in-plane magneticfields and temperatures.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 2, 'D', 2],[73.0, 1, 'to', 1],[74.0, 30, 'K', 1]

B
###Colossal negative magnetoresistance in a 2D electron gas|Q. Shi,P. D. Martin,Q. A. Ebner,M. A. Zudov,L. N. Pfeiffer,K. W. West###
(1101313, 1101313)
 Remarkably, the temperature dependence of theresistivity at B approx 1 kG is linear over the entire temperature rangestudied (from 1 to 30 K) and appears to coincide with the high-temperaturelimit of the zero-field resistivity, hinting on the important role of acousticphonons.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[184.0, 2, 'D', 3],[28.0, 1, 'to', 0],[29.0, 30, 'K', 0]

In
###Controllable generation of a spin-triplet supercurrent in a Josephson spin-valve|Adrian Iovan,Taras Golod,Vladimir M. Krasnov###
(1101485, 1101485)
 In thiswork we study experimentally nano-scale devices, in which a ferromagnetic spinvalve is embedded into a Josephson junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TaP
###Large Magnetoresistance over an Extended Temperature Regime in Monophosphides of Tantalum and Niobium|Chenglong Zhang,Cheng Guo,Hong Lu,Xiao Zhang,Zhujun Yuan,Ziquan Lin,Junfeng Wang,Shuang Jia###
(1102080, 1102081)
 We report extremely large magnetoresistance (MR) in an extended temperatureregime from 1.5 K to 300 K in non-magnetic binary compounds TaP and NbP.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 1.5, 'K', 0],[12.0, 300, 'K', 0],[28.0, 2, 'K', 1],[76.0, 56, 'Tesla', 1],[79.0, 1.5, 'K', 1],[132.0, 300, '%', 2],[145.0, 9, 'Tesla', 2]

NbP
###Large Magnetoresistance over an Extended Temperature Regime in Monophosphides of Tantalum and Niobium|Chenglong Zhang,Cheng Guo,Hong Lu,Xiao Zhang,Zhujun Yuan,Ziquan Lin,Junfeng Wang,Shuang Jia###
(1102085, 1102086)
 We report extremely large magnetoresistance (MR) in an extended temperatureregime from 1.5 K to 300 K in non-magnetic binary compounds TaP and NbP.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 1.5, 'K', 0],[17.0, 300, 'K', 0],[23.0, 2, 'K', 1],[71.0, 56, 'Tesla', 1],[74.0, 1.5, 'K', 1],[127.0, 300, '%', 2],[140.0, 9, 'Tesla', 2]

TaP
###Large Magnetoresistance over an Extended Temperature Regime in Monophosphides of Tantalum and Niobium|Chenglong Zhang,Cheng Guo,Hong Lu,Xiao Zhang,Zhujun Yuan,Ziquan Lin,Junfeng Wang,Shuang Jia###
(1102089, 1102090)
 TaPexhibits linear MR around 1.8times 104 at 2 K in a magnetic field of 9Tesla, which further follows its linearity up to 1.4times 105 in a magneticfield of 56 Tesla at 1.5 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 1.5, 'K', 1],[21.0, 300, 'K', 1],[19.0, 2, 'K', 0],[67.0, 56, 'Tesla', 0],[70.0, 1.5, 'K', 0],[123.0, 300, '%', 1],[136.0, 9, 'Tesla', 1]

At
###Large Magnetoresistance over an Extended Temperature Regime in Monophosphides of Tantalum and Niobium|Chenglong Zhang,Cheng Guo,Hong Lu,Xiao Zhang,Zhujun Yuan,Ziquan Lin,Junfeng Wang,Shuang Jia###
(1102163, 1102163)
 At room temperature the MR for TaP and NbP followsa power law of the exponent about 1.5 with the values larger than 300% ina magnetic field of 9 Tesla.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 1.5, 'K', 2],[95.0, 300, 'K', 2],[54.0, 2, 'K', 1],[6.0, 56, 'Tesla', 1],[3.0, 1.5, 'K', 1],[50.0, 300, '%', 0],[63.0, 9, 'Tesla', 0]

TaP
###Large Magnetoresistance over an Extended Temperature Regime in Monophosphides of Tantalum and Niobium|Chenglong Zhang,Cheng Guo,Hong Lu,Xiao Zhang,Zhujun Yuan,Ziquan Lin,Junfeng Wang,Shuang Jia###
(1102176, 1102177)
 At room temperature the MR for TaP and NbP followsa power law of the exponent about 1.5 with the values larger than 300% ina magnetic field of 9 Tesla.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 1.5, 'K', 2],[108.0, 300, 'K', 2],[67.0, 2, 'K', 1],[19.0, 56, 'Tesla', 1],[16.0, 1.5, 'K', 1],[36.0, 300, '%', 0],[49.0, 9, 'Tesla', 0]

NbP
###Large Magnetoresistance over an Extended Temperature Regime in Monophosphides of Tantalum and Niobium|Chenglong Zhang,Cheng Guo,Hong Lu,Xiao Zhang,Zhujun Yuan,Ziquan Lin,Junfeng Wang,Shuang Jia###
(1102181, 1102182)
 At room temperature the MR for TaP and NbP followsa power law of the exponent about 1.5 with the values larger than 300% ina magnetic field of 9 Tesla.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 1.5, 'K', 2],[113.0, 300, 'K', 2],[72.0, 2, 'K', 1],[24.0, 56, 'Tesla', 1],[21.0, 1.5, 'K', 1],[31.0, 300, '%', 0],[44.0, 9, 'Tesla', 0]

CoCr2O4
###Spin-Hall magnetoresistance and spin Seebeck effect in spin-spiral and paramagnetic phases of multiferroic CoCr2O4 films|Aisha Aqeel,Nynke Vlietstra,Jeroen A. Heuver,Gerrit E. W. Bauer,Beatriz Noheda,Bart J. van Wees,Thomas T. M. Palstra###
(1102326, 1102330)
Spin-Hall magnetoresistance and spin Seebeck effect in spin-spiral and paramagnetic phases of multiferroic CoCr2O4 films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 28, 'K', 2],[118.0, 14, 'K', 2],[181.0, 94, 'K', 3]

S
###Spin-Hall magnetoresistance and spin Seebeck effect in spin-spiral and paramagnetic phases of multiferroic CoCr2O4 films|Aisha Aqeel,Nynke Vlietstra,Jeroen A. Heuver,Gerrit E. W. Bauer,Beatriz Noheda,Bart J. van Wees,Thomas T. M. Palstra###
(1102350, 1102350)
 We report on the spin-Hall magnetoresistance (SMR) and spin Seebeck effect(SSE) in multiferroic CoCr2O4 (CCO) spinel thin films with Pt contacts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 28, 'K', 1],[98.0, 14, 'K', 1],[161.0, 94, 'K', 2]

SS
###Spin-Hall magnetoresistance and spin Seebeck effect in spin-spiral and paramagnetic phases of multiferroic CoCr2O4 films|Aisha Aqeel,Nynke Vlietstra,Jeroen A. Heuver,Gerrit E. W. Bauer,Beatriz Noheda,Bart J. van Wees,Thomas T. M. Palstra###
(1102365, 1102366)
 We report on the spin-Hall magnetoresistance (SMR) and spin Seebeck effect(SSE) in multiferroic CoCr2O4 (CCO) spinel thin films with Pt contacts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 28, 'K', 1],[82.0, 14, 'K', 1],[145.0, 94, 'K', 2]

CoCr2O4
###Spin-Hall magnetoresistance and spin Seebeck effect in spin-spiral and paramagnetic phases of multiferroic CoCr2O4 films|Aisha Aqeel,Nynke Vlietstra,Jeroen A. Heuver,Gerrit E. W. Bauer,Beatriz Noheda,Bart J. van Wees,Thomas T. M. Palstra###
(1102374, 1102378)
 We report on the spin-Hall magnetoresistance (SMR) and spin Seebeck effect(SSE) in multiferroic CoCr2O4 (CCO) spinel thin films with Pt contacts.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 28, 'K', 1],[70.0, 14, 'K', 1],[133.0, 94, 'K', 2]

(CCO)
###Spin-Hall magnetoresistance and spin Seebeck effect in spin-spiral and paramagnetic phases of multiferroic CoCr2O4 films|Aisha Aqeel,Nynke Vlietstra,Jeroen A. Heuver,Gerrit E. W. Bauer,Beatriz Noheda,Bart J. van Wees,Thomas T. M. Palstra###
(1102380, 1102384)
 We report on the spin-Hall magnetoresistance (SMR) and spin Seebeck effect(SSE) in multiferroic CoCr2O4 (CCO) spinel thin films with Pt contacts.
Featurization successful!
0,0,0,0,0,0.6666666666666666,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 28, 'K', 1],[64.0, 14, 'K', 1],[127.0, 94, 'K', 2]

Pt
###Spin-Hall magnetoresistance and spin Seebeck effect in spin-spiral and paramagnetic phases of multiferroic CoCr2O4 films|Aisha Aqeel,Nynke Vlietstra,Jeroen A. Heuver,Gerrit E. W. Bauer,Beatriz Noheda,Bart J. van Wees,Thomas T. M. Palstra###
(1102394, 1102394)
 We report on the spin-Hall magnetoresistance (SMR) and spin Seebeck effect(SSE) in multiferroic CoCr2O4 (CCO) spinel thin films with Pt contacts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 28, 'K', 1],[54.0, 14, 'K', 1],[117.0, 94, 'K', 2]

S
###Spin-Hall magnetoresistance and spin Seebeck effect in spin-spiral and paramagnetic phases of multiferroic CoCr2O4 films|Aisha Aqeel,Nynke Vlietstra,Jeroen A. Heuver,Gerrit E. W. Bauer,Beatriz Noheda,Bart J. van Wees,Thomas T. M. Palstra###
(1102454, 1102454)
 The SMR and SSE<missing VAR> responsein the spin lock-in phase are one order of magnitude larger than those observedat the ferrimagnetic transition temperature (Tc  94 K), which indicates thatthe interaction between spins at the PtCCO interface is more efficient in thenon-collinear magnetic state below Ts and T<missing VAR>lock-in.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 28, 'K', 1],[6.0, 14, 'K', 1],[57.0, 94, 'K', 0]

SS
###Spin-Hall magnetoresistance and spin Seebeck effect in spin-spiral and paramagnetic phases of multiferroic CoCr2O4 films|Aisha Aqeel,Nynke Vlietstra,Jeroen A. Heuver,Gerrit E. W. Bauer,Beatriz Noheda,Bart J. van Wees,Thomas T. M. Palstra###
(1102460, 1102461)
 The SMR and SSE<missing VAR> responsein the spin lock-in phase are one order of magnitude larger than those observedat the ferrimagnetic transition temperature (Tc  94 K), which indicates thatthe interaction between spins at the PtCCO interface is more efficient in thenon-collinear magnetic state below Ts and T<missing VAR>lock-in.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 28, 'K', 1],[12.0, 14, 'K', 1],[50.0, 94, 'K', 0]

Tc
###Spin-Hall magnetoresistance and spin Seebeck effect in spin-spiral and paramagnetic phases of multiferroic CoCr2O4 films|Aisha Aqeel,Nynke Vlietstra,Jeroen A. Heuver,Gerrit E. W. Bauer,Beatriz Noheda,Bart J. van Wees,Thomas T. M. Palstra###
(1102509, 1102509)
 The SMR and SSE<missing VAR> responsein the spin lock-in phase are one order of magnitude larger than those observedat the ferrimagnetic transition temperature (Tc  94 K), which indicates thatthe interaction between spins at the PtCCO interface is more efficient in thenon-collinear magnetic state below Ts and T<missing VAR>lock-in.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 28, 'K', 1],[61.0, 14, 'K', 1],[2.0, 94, 'K', 0]

PtCCO
###Spin-Hall magnetoresistance and spin Seebeck effect in spin-spiral and paramagnetic phases of multiferroic CoCr2O4 films|Aisha Aqeel,Nynke Vlietstra,Jeroen A. Heuver,Gerrit E. W. Bauer,Beatriz Noheda,Bart J. van Wees,Thomas T. M. Palstra###
(1102534, 1102537)
 The SMR and SSE<missing VAR> responsein the spin lock-in phase are one order of magnitude larger than those observedat the ferrimagnetic transition temperature (Tc  94 K), which indicates thatthe interaction between spins at the PtCCO interface is more efficient in thenon-collinear magnetic state below Ts and T<missing VAR>lock-in.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 28, 'K', 1],[86.0, 14, 'K', 1],[23.0, 94, 'K', 0]

At
###Spin-Hall magnetoresistance and spin Seebeck effect in spin-spiral and paramagnetic phases of multiferroic CoCr2O4 films|Aisha Aqeel,Nynke Vlietstra,Jeroen A. Heuver,Gerrit E. W. Bauer,Beatriz Noheda,Bart J. van Wees,Thomas T. M. Palstra###
(1102572, 1102572)
 At T<missing VAR> > Tc, magneticfield-induced SMR and SSE<missing VAR> signals are observed, which can be explained by ahigh interface susceptibility.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 28, 'K', 2],[124.0, 14, 'K', 2],[61.0, 94, 'K', 1]

Tc
###Spin-Hall magnetoresistance and spin Seebeck effect in spin-spiral and paramagnetic phases of multiferroic CoCr2O4 films|Aisha Aqeel,Nynke Vlietstra,Jeroen A. Heuver,Gerrit E. W. Bauer,Beatriz Noheda,Bart J. van Wees,Thomas T. M. Palstra###
(1102578, 1102578)
 At T<missing VAR> > Tc, magneticfield-induced SMR and SSE<missing VAR> signals are observed, which can be explained by ahigh interface susceptibility.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 28, 'K', 2],[130.0, 14, 'K', 2],[67.0, 94, 'K', 1]

S
###Spin-Hall magnetoresistance and spin Seebeck effect in spin-spiral and paramagnetic phases of multiferroic CoCr2O4 films|Aisha Aqeel,Nynke Vlietstra,Jeroen A. Heuver,Gerrit E. W. Bauer,Beatriz Noheda,Bart J. van Wees,Thomas T. M. Palstra###
(1102588, 1102588)
 At T<missing VAR> > Tc, magneticfield-induced SMR and SSE<missing VAR> signals are observed, which can be explained by ahigh interface susceptibility.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 28, 'K', 2],[140.0, 14, 'K', 2],[77.0, 94, 'K', 1]

SS
###Spin-Hall magnetoresistance and spin Seebeck effect in spin-spiral and paramagnetic phases of multiferroic CoCr2O4 films|Aisha Aqeel,Nynke Vlietstra,Jeroen A. Heuver,Gerrit E. W. Bauer,Beatriz Noheda,Bart J. van Wees,Thomas T. M. Palstra###
(1102594, 1102595)
 At T<missing VAR> > Tc, magneticfield-induced SMR and SSE<missing VAR> signals are observed, which can be explained by ahigh interface susceptibility.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 28, 'K', 2],[146.0, 14, 'K', 2],[83.0, 94, 'K', 1]

PtCCO
###Spin-Hall magnetoresistance and spin Seebeck effect in spin-spiral and paramagnetic phases of multiferroic CoCr2O4 films|Aisha Aqeel,Nynke Vlietstra,Jeroen A. Heuver,Gerrit E. W. Bauer,Beatriz Noheda,Bart J. van Wees,Thomas T. M. Palstra###
(1102644, 1102647)
 Our results show that the spin transport at thePtCCO interface is sensitive to the magnetic phases but cannot be explainedsolely by the bulk magnetization.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[217.0, 28, 'K', 3],[196.0, 14, 'K', 3],[133.0, 94, 'K', 2]

MnSi
###Macroscopic evidence of skyrmion lattice inhomogeneity and magnetic vortex states in the A-phase of MnSi|S. V. Demishev,I. I. Lobanova,N. E. Sluchanko,V. V. Glushkov###
(1102721, 1102722)
Macroscopic evidence of skyrmion lattice inhomogeneity and magnetic vortex states in the A-phase of MnSi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnSi
###Macroscopic evidence of skyrmion lattice inhomogeneity and magnetic vortex states in the A-phase of MnSi|S. V. Demishev,I. I. Lobanova,N. E. Sluchanko,V. V. Glushkov###
(1102741, 1102742)
 The magnetic inhomogeneity of the A-phase in MnSi chiral magnet is identifiedfor the first time from the precise measurements of transversemagnetoresistance (MR) anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnSi
###Macroscopic evidence of skyrmion lattice inhomogeneity and magnetic vortex states in the A-phase of MnSi|S. V. Demishev,I. I. Lobanova,N. E. Sluchanko,V. V. Glushkov###
(1102824, 1102825)
 The area inside the A-phase (A-phase core)corresponds to isotropic MR having no confinement to the MnSi crystal lattice.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Density of states and magnetotransport in Weyl semimetals with long-range disorder|D. A. Pesin,E. G. Mishchenko,A. Levchenko###
(1103235, 1103235)
 In the context of transport,we discuss that a self-consistent theory of screening in magnetic field mayconceivably lead to non-monotonic low-field magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Theory of spin Hall magnetoresistance (SMR) and related phenomena|Yan-Ting Chen,Saburo Takahashi,Hiroyasu Nakayama,Matthias Althammer,Sebastian T. B. Goennenwein,Eiji Saitoh,Gerrit E. W. Bauer###
(1103310, 1103310)
Theory of spin Hall magnetoresistance (SMR) and related phenomena.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Theory of spin Hall magnetoresistance (SMR) and related phenomena|Yan-Ting Chen,Saburo Takahashi,Hiroyasu Nakayama,Matthias Althammer,Sebastian T. B. Goennenwein,Eiji Saitoh,Gerrit E. W. Bauer###
(1103339, 1103339)
 We review the recently discovered spin Hall magnetoresistance (SMR) andrelated effects from a theoretical point of view.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Theory of spin Hall magnetoresistance (SMR) and related phenomena|Yan-Ting Chen,Saburo Takahashi,Hiroyasu Nakayama,Matthias Althammer,Sebastian T. B. Goennenwein,Eiji Saitoh,Gerrit E. W. Bauer###
(1103366, 1103366)
 The SMR is observed inbilayers of a magnetic insulator and a metal, in which spin currentsaregenerated in the normal metal due to the spin Hall effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Theory of spin Hall magnetoresistance (SMR) and related phenomena|Yan-Ting Chen,Saburo Takahashi,Hiroyasu Nakayama,Matthias Althammer,Sebastian T. B. Goennenwein,Eiji Saitoh,Gerrit E. W. Bauer###
(1103486, 1103486)
 The SMR provides a convenient tool to non-invasivelymeasure the magnetization direction and spin-transfer torque to an insulator.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Theory of spin Hall magnetoresistance (SMR) and related phenomena|Yan-Ting Chen,Saburo Takahashi,Hiroyasu Nakayama,Matthias Althammer,Sebastian T. B. Goennenwein,Eiji Saitoh,Gerrit E. W. Bauer###
(1103547, 1103547)
We introduce the minimal theoretical instruments to calculate the SMR, i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Theory of spin Hall magnetoresistance (SMR) and related phenomena|Yan-Ting Chen,Saburo Takahashi,Hiroyasu Nakayama,Matthias Althammer,Sebastian T. B. Goennenwein,Eiji Saitoh,Gerrit E. W. Bauer###
(1103671, 1103671)
 We discuss thelimitations of the theory as well as alternative mechanisms such as theferromagnetic proximity effect and Rashba spin-orbit torques, and point out newdevelopments related to the SMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pd/Fe
###Perpendicular Reading of Single Confined Magnetic Skyrmions|Dax M. Crum,Mohammed Bouhassoune,Juba Bouaziz,Benedikt Schweflinghaus,Stefan Blügel,Samir Lounis###
(1103991, 1103993)
 Local transport properties are sensitive to this effect, as we reportan atomistic conductance anisotropy of over 20% for magnetic skyrmions inPd/Fe/Ir(111) thin-films.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[12.0, 20, '%', 0]

In
###Perpendicular Reading of Single Confined Magnetic Skyrmions|Dax M. Crum,Mohammed Bouhassoune,Juba Bouaziz,Benedikt Schweflinghaus,Stefan Blügel,Samir Lounis###
(1104005, 1104005)
 In single skyrmions, engineering this spin-mixingmagnetoresistance possibly could be incorporated in future magnetic storagetechnologies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 20, '%', 1]

FeSe
###Improvement of the superconducting properties of polycrystalline FeSe by silver addition|E. Nazarova,N. Balchev,K. Nenkov,K. Buchkov,D. Kovacheva,A. Zahariev,G. Fuchs###
(1104343, 1104344)
Improvement of the superconducting properties of polycrystalline FeSe by silver addition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 10, 'wt', 1],[125.0, 1, 'K', 3],[138.0, 2.74, 'K', 3],[239.0, 1, '%', 6],[340.0, 2, ',', 8]

Ag
###Improvement of the superconducting properties of polycrystalline FeSe by silver addition|E. Nazarova,N. Balchev,K. Nenkov,K. Buchkov,D. Kovacheva,A. Zahariev,G. Fuchs###
(1104365, 1104365)
 We investigated the influence of different Ag additions (up to 10 wt %) onthe superconducting properties of FeSe0.94.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 10, 'wt', 0],[104.0, 1, 'K', 2],[117.0, 2.74, 'K', 2],[218.0, 1, '%', 5],[319.0, 2, ',', 7]

FeSe0.94
###Improvement of the superconducting properties of polycrystalline FeSe by silver addition|E. Nazarova,N. Balchev,K. Nenkov,K. Buchkov,D. Kovacheva,A. Zahariev,G. Fuchs###
(1104389, 1104391)
 We investigated the influence of different Ag additions (up to 10 wt %) onthe superconducting properties of FeSe0.94.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5154639175257733,0,0,0,0,0,0,0,0.4845360824742268,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 10, 'wt', 0],[78.0, 1, 'K', 2],[91.0, 2.74, 'K', 2],[192.0, 1, '%', 5],[293.0, 2, ',', 7]

S
###Improvement of the superconducting properties of polycrystalline FeSe by silver addition|E. Nazarova,N. Balchev,K. Nenkov,K. Buchkov,D. Kovacheva,A. Zahariev,G. Fuchs###
(1104408, 1104408)
 The structural investigations (XRDand SEM) indicated that Ag is present in three different forms.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 10, 'wt', 1],[61.0, 1, 'K', 1],[74.0, 2.74, 'K', 1],[175.0, 1, '%', 4],[276.0, 2, ',', 6]

Ag
###Improvement of the superconducting properties of polycrystalline FeSe by silver addition|E. Nazarova,N. Balchev,K. Nenkov,K. Buchkov,D. Kovacheva,A. Zahariev,G. Fuchs###
(1104417, 1104417)
 The structural investigations (XRDand SEM) indicated that Ag is present in three different forms.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 10, 'wt', 1],[52.0, 1, 'K', 1],[65.0, 2.74, 'K', 1],[166.0, 1, '%', 4],[267.0, 2, ',', 6]

Ag
###Improvement of the superconducting properties of polycrystalline FeSe by silver addition|E. Nazarova,N. Balchev,K. Nenkov,K. Buchkov,D. Kovacheva,A. Zahariev,G. Fuchs###
(1104432, 1104432)
 Ag at grainboundaries supports the excellent intergrain connections and reducessuperconducting transition width to values smaller than 1K at B0 and smallerthan 2.74 K at B14 T<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 10, 'wt', 2],[37.0, 1, 'K', 0],[50.0, 2.74, 'K', 0],[151.0, 1, '%', 3],[252.0, 2, ',', 5]

B0
###Improvement of the superconducting properties of polycrystalline FeSe by silver addition|E. Nazarova,N. Balchev,K. Nenkov,K. Buchkov,D. Kovacheva,A. Zahariev,G. Fuchs###
(1104473, 1104474)
 Ag at grainboundaries supports the excellent intergrain connections and reducessuperconducting transition width to values smaller than 1K at B0 and smallerthan 2.74 K at B14 T<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 10, 'wt', 2],[4.0, 1, 'K', 0],[8.0, 2.74, 'K', 0],[109.0, 1, '%', 3],[210.0, 2, ',', 5]

B14
###Improvement of the superconducting properties of polycrystalline FeSe by silver addition|E. Nazarova,N. Balchev,K. Nenkov,K. Buchkov,D. Kovacheva,A. Zahariev,G. Fuchs###
(1104486, 1104487)
 Ag at grainboundaries supports the excellent intergrain connections and reducessuperconducting transition width to values smaller than 1K at B0 and smallerthan 2.74 K at B14 T<missing VAR>.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 10, 'wt', 2],[17.0, 1, 'K', 0],[4.0, 2.74, 'K', 0],[96.0, 1, '%', 3],[197.0, 2, ',', 5]

Ag
###Improvement of the superconducting properties of polycrystalline FeSe by silver addition|E. Nazarova,N. Balchev,K. Nenkov,K. Buchkov,D. Kovacheva,A. Zahariev,G. Fuchs###
(1104492, 1104492)
 Ag insertion in the crystal lattice unit cell providesadditional carriers and changes the electron hole imbalance in FeSe0.94.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 10, 'wt', 3],[23.0, 1, 'K', 1],[10.0, 2.74, 'K', 1],[91.0, 1, '%', 2],[192.0, 2, ',', 4]

FeSe0.94
###Improvement of the superconducting properties of polycrystalline FeSe by silver addition|E. Nazarova,N. Balchev,K. Nenkov,K. Buchkov,D. Kovacheva,A. Zahariev,G. Fuchs###
(1104529, 1104531)
 Ag insertion in the crystal lattice unit cell providesadditional carriers and changes the electron hole imbalance in FeSe0.94.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5154639175257733,0,0,0,0,0,0,0,0.4845360824742268,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 10, 'wt', 3],[60.0, 1, 'K', 1],[47.0, 2.74, 'K', 1],[52.0, 1, '%', 2],[153.0, 2, ',', 4]

(Tc)
###Improvement of the superconducting properties of polycrystalline FeSe by silver addition|E. Nazarova,N. Balchev,K. Nenkov,K. Buchkov,D. Kovacheva,A. Zahariev,G. Fuchs###
(1104565, 1104567)
 Thisresults in an increase in the magnetoresistive effect (MR) and criticaltemperature (Tc).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[192.0, 10, 'wt', 4],[96.0, 1, 'K', 2],[83.0, 2.74, 'K', 2],[16.0, 1, '%', 1],[117.0, 2, ',', 3]

Ag
###Improvement of the superconducting properties of polycrystalline FeSe by silver addition|E. Nazarova,N. Balchev,K. Nenkov,K. Buchkov,D. Kovacheva,A. Zahariev,G. Fuchs###
(1104572, 1104572)
 Reacted Ag forms a small amount (1%) of Ag2Se impurityphase, which may increase the pinning energy in comparison with that of theundoped sample.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[199.0, 10, 'wt', 5],[103.0, 1, 'K', 3],[90.0, 2.74, 'K', 3],[11.0, 1, '%', 0],[112.0, 2, ',', 2]

Ag2Se
###Improvement of the superconducting properties of polycrystalline FeSe by silver addition|E. Nazarova,N. Balchev,K. Nenkov,K. Buchkov,D. Kovacheva,A. Zahariev,G. Fuchs###
(1104589, 1104591)
 Reacted Ag forms a small amount (1%) of Ag2Se impurityphase, which may increase the pinning energy in comparison with that of theundoped sample.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[216.0, 10, 'wt', 5],[120.0, 1, 'K', 3],[107.0, 2.74, 'K', 3],[6.0, 1, '%', 0],[93.0, 2, ',', 2]

Ag
###Improvement of the superconducting properties of polycrystalline FeSe by silver addition|E. Nazarova,N. Balchev,K. Nenkov,K. Buchkov,D. Kovacheva,A. Zahariev,G. Fuchs###
(1104671, 1104671)
 Thus, unlike cuprates Ag addition enhances theTc, Bc2, pinning energy and MR making the properties of polycrystallineFeSe0.94 similar to those of single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[298.0, 10, 'wt', 7],[202.0, 1, 'K', 5],[189.0, 2.74, 'K', 5],[88.0, 1, '%', 2],[13.0, 2, ',', 0]

Tc
###Improvement of the superconducting properties of polycrystalline FeSe by silver addition|E. Nazarova,N. Balchev,K. Nenkov,K. Buchkov,D. Kovacheva,A. Zahariev,G. Fuchs###
(1104680, 1104680)
 Thus, unlike cuprates Ag addition enhances theTc, Bc2, pinning energy and MR making the properties of polycrystallineFeSe0.94 similar to those of single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[307.0, 10, 'wt', 7],[211.0, 1, 'K', 5],[198.0, 2.74, 'K', 5],[97.0, 1, '%', 2],[4.0, 2, ',', 0]

FeSe0.94
###Improvement of the superconducting properties of polycrystalline FeSe by silver addition|E. Nazarova,N. Balchev,K. Nenkov,K. Buchkov,D. Kovacheva,A. Zahariev,G. Fuchs###
(1104707, 1104709)
 Thus, unlike cuprates Ag addition enhances theTc, Bc2, pinning energy and MR making the properties of polycrystallineFeSe0.94 similar to those of single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5154639175257733,0,0,0,0,0,0,0,0.4845360824742268,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[334.0, 10, 'wt', 7],[238.0, 1, 'K', 5],[225.0, 2.74, 'K', 5],[124.0, 1, '%', 2],[23.0, 2, ',', 0]

GaMnAs
###Spin-dependent transport properties of a GaMnAs-based vertical spin metal-oxide- semiconductor field-effect transistor structure|Toshiki Kanaki,Hirokatsu Asahara,Shinobu Ohya,Masaaki Tanaka###
(1104744, 1104746)
Spin-dependent transport properties of a GaMnAs-based vertical spin metal-oxide- semiconductor field-effect transistor structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, -10.8, 'V', 2],[201.0, 3.5, 'K', 2]

OSF
###Spin-dependent transport properties of a GaMnAs-based vertical spin metal-oxide- semiconductor field-effect transistor structure|Toshiki Kanaki,Hirokatsu Asahara,Shinobu Ohya,Masaaki Tanaka###
(1104797, 1104799)
 We fabricate a vertical spin metal-oxide-semiconductor field-effecttransistor (spin-M<missing VAR>OSFET) structure, which is composed of an epitaxialsingle-crystal heterostructure with a ferromagnetic-semiconductor GaMnAssource/drain, and investigate its spin-dependent transport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, -10.8, 'V', 1],[148.0, 3.5, 'K', 1]

GaMnAs
###Spin-dependent transport properties of a GaMnAs-based vertical spin metal-oxide- semiconductor field-effect transistor structure|Toshiki Kanaki,Hirokatsu Asahara,Shinobu Ohya,Masaaki Tanaka###
(1104834, 1104836)
 We fabricate a vertical spin metal-oxide-semiconductor field-effecttransistor (spin-M<missing VAR>OSFET) structure, which is composed of an epitaxialsingle-crystal heterostructure with a ferromagnetic-semiconductor GaMnAssource/drain, and investigate its spin-dependent transport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, -10.8, 'V', 1],[111.0, 3.5, 'K', 1]

I
###Spin-dependent transport properties of a GaMnAs-based vertical spin metal-oxide- semiconductor field-effect transistor structure|Toshiki Kanaki,Hirokatsu Asahara,Shinobu Ohya,Masaaki Tanaka###
(1104872, 1104872)
 Wemodulate the drain-source current ID<missing VAR>S by  or -0.5 % with a gate-sourcevoltage of  or -10.8 V and also modulate ID<missing VAR>S by up to 60 % with changing themagnetization configuration of the GaMnAs source/drain at 3.5 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, -10.8, 'V', 0],[75.0, 3.5, 'K', 0]

S
###Spin-dependent transport properties of a GaMnAs-based vertical spin metal-oxide- semiconductor field-effect transistor structure|Toshiki Kanaki,Hirokatsu Asahara,Shinobu Ohya,Masaaki Tanaka###
(1104874, 1104874)
 Wemodulate the drain-source current ID<missing VAR>S by  or -0.5 % with a gate-sourcevoltage of  or -10.8 V and also modulate ID<missing VAR>S by up to 60 % with changing themagnetization configuration of the GaMnAs source/drain at 3.5 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, -10.8, 'V', 0],[73.0, 3.5, 'K', 0]

I
###Spin-dependent transport properties of a GaMnAs-based vertical spin metal-oxide- semiconductor field-effect transistor structure|Toshiki Kanaki,Hirokatsu Asahara,Shinobu Ohya,Masaaki Tanaka###
(1104909, 1104909)
 Wemodulate the drain-source current ID<missing VAR>S by  or -0.5 % with a gate-sourcevoltage of  or -10.8 V and also modulate ID<missing VAR>S by up to 60 % with changing themagnetization configuration of the GaMnAs source/drain at 3.5 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, -10.8, 'V', 0],[38.0, 3.5, 'K', 0]

S
###Spin-dependent transport properties of a GaMnAs-based vertical spin metal-oxide- semiconductor field-effect transistor structure|Toshiki Kanaki,Hirokatsu Asahara,Shinobu Ohya,Masaaki Tanaka###
(1104911, 1104911)
 Wemodulate the drain-source current ID<missing VAR>S by  or -0.5 % with a gate-sourcevoltage of  or -10.8 V and also modulate ID<missing VAR>S by up to 60 % with changing themagnetization configuration of the GaMnAs source/drain at 3.5 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, -10.8, 'V', 0],[36.0, 3.5, 'K', 0]

GaMnAs
###Spin-dependent transport properties of a GaMnAs-based vertical spin metal-oxide- semiconductor field-effect transistor structure|Toshiki Kanaki,Hirokatsu Asahara,Shinobu Ohya,Masaaki Tanaka###
(1104938, 1104940)
 Wemodulate the drain-source current ID<missing VAR>S by  or -0.5 % with a gate-sourcevoltage of  or -10.8 V and also modulate ID<missing VAR>S by up to 60 % with changing themagnetization configuration of the GaMnAs source/drain at 3.5 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, -10.8, 'V', 0],[7.0, 3.5, 'K', 0]

OSF
###Spin-dependent transport properties of a GaMnAs-based vertical spin metal-oxide- semiconductor field-effect transistor structure|Toshiki Kanaki,Hirokatsu Asahara,Shinobu Ohya,Masaaki Tanaka###
(1104993, 1104995)
 Themagnetoresistance ratio is more than two orders of magnitude higher than thatobtained in the previous studies on spin M<missing VAR>OSFE<missing VAR>Ts.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, -10.8, 'V', 1],[46.0, 3.5, 'K', 1]

OSF
###Spin-dependent transport properties of a GaMnAs-based vertical spin metal-oxide- semiconductor field-effect transistor structure|Toshiki Kanaki,Hirokatsu Asahara,Shinobu Ohya,Masaaki Tanaka###
(1105032, 1105034)
 Our result shows that avertical structure is one of the hopeful candidates for spin M<missing VAR>OSFET when thedevice size is reduced to a sub-micron or nanometer scale.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, -10.8, 'V', 2],[85.0, 3.5, 'K', 2]

Te2
###Tilted Dirac Fermions|Lukas Muechler,Aris Alexandradinata,Titus Neupert,Roberto Car###
(1105132, 1105133)
 This notion is materialized in themonolayers of M<missing VAR>Te2 (M<missing VAR>  W, Mo) if spin-orbit coupling is neglected.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Tilted Dirac Fermions|Lukas Muechler,Aris Alexandradinata,Titus Neupert,Roberto Car###
(1105139, 1105139)
 This notion is materialized in themonolayers of M<missing VAR>Te2 (M<missing VAR>  W, Mo) if spin-orbit coupling is neglected.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mo
###Tilted Dirac Fermions|Lukas Muechler,Aris Alexandradinata,Titus Neupert,Roberto Car###
(1105142, 1105142)
 This notion is materialized in themonolayers of M<missing VAR>Te2 (M<missing VAR>  W, Mo) if spin-orbit coupling is neglected.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Te2
###Tilted Dirac Fermions|Lukas Muechler,Aris Alexandradinata,Titus Neupert,Roberto Car###
(1105217, 1105218)
 An additional feature of the Dirac cone inmonolayer M<missing VAR>Te2 is that it tilts over in a Lifshitz transition to produceelectron and hole pockets, a type-II Dirac cone.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Tilted Dirac Fermions|Lukas Muechler,Aris Alexandradinata,Titus Neupert,Roberto Car###
(1105256, 1105257)
 An additional feature of the Dirac cone inmonolayer M<missing VAR>Te2 is that it tilts over in a Lifshitz transition to produceelectron and hole pockets, a type-II Dirac cone.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Tilted Dirac Fermions|Lukas Muechler,Aris Alexandradinata,Titus Neupert,Roberto Car###
(1105319, 1105321)
 These pockets, together withthe pseudospin structure of the Dirac electrons, suggest a unified, topologicalexplanation for the recently-reported, non-saturating magnetoresistance inWTe2, as well as its circular dichroism in photoemission.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Tilted Dirac Fermions|Lukas Muechler,Aris Alexandradinata,Titus Neupert,Roberto Car###
(1105384, 1105386)
 We complement ouranalysis and first-principle bandstructure calculations with antextitab-initio-derived-derived tight-binding model for the WTe2monolayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Terahertz-induced resistance oscillations in high mobility two-dimensional electron systems|Jesus Inarrea###
(1105491, 1105491)
 We focus on theinteraction between the obtained radiation-induced magnetoresistanceoscillations (RIRO) and the Shubnikov-de Haas (SdHO) oscillations.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Terahertz-induced resistance oscillations in high mobility two-dimensional electron systems|Jesus Inarrea###
(1105507, 1105507)
 We focus on theinteraction between the obtained radiation-induced magnetoresistanceoscillations (RIRO) and the Shubnikov-de Haas (SdHO) oscillations.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HO
###Terahertz-induced resistance oscillations in high mobility two-dimensional electron systems|Jesus Inarrea###
(1105548, 1105549)
 First, the observeddisappearance of the SdHO oscillations simultaneously with the vanishingresistance at the zero resistance states region.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HO
###Terahertz-induced resistance oscillations in high mobility two-dimensional electron systems|Jesus Inarrea###
(1105593, 1105594)
 And secondly the strongmodulation of the SdHO oscillations at sufficient terahertz radiation power.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Terahertz-induced resistance oscillations in high mobility two-dimensional electron systems|Jesus Inarrea###
(1105668, 1105668)
 Weconclude that both effects share the same physical origin, the interferencebetween the average advanced distance by the scattered electron betweenirradiated Landau states, (RIRO), and the available initial density of statesat a certain magnetic field, (SdHO).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Terahertz-induced resistance oscillations in high mobility two-dimensional electron systems|Jesus Inarrea###
(1105701, 1105701)
 Weconclude that both effects share the same physical origin, the interferencebetween the average advanced distance by the scattered electron betweenirradiated Landau states, (RIRO), and the available initial density of statesat a certain magnetic field, (SdHO).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nd1.83Ce0.17CuO4
###Magneto-transport measurements on Nd$_{1.83}$Ce$_{0.17}$CuO$_{4\pmδ}$ thin films|Anita Guarino,Antonio Leo,Francesco Avitabile,Nadia Martucciello,Adolfo Avella,Gaia Grimaldi,Alfonso Romano,Paola Romano,Angela Nigro###
(1105813, 1105819)
Magneto-transport measurements on Nd1.83Ce0.17CuO4pm thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.02428571428571429,0,0.26142857142857145,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nd2-xCe
###Magneto-transport measurements on Nd$_{1.83}$Ce$_{0.17}$CuO$_{4\pmδ}$ thin films|Anita Guarino,Antonio Leo,Francesco Avitabile,Nadia Martucciello,Adolfo Avella,Gaia Grimaldi,Alfonso Romano,Paola Romano,Angela Nigro###
(1105827, 1105831)
 Nd2-xCex<missing VAR>CuO4pmdelta (NCCO) epitaxial thin films have beendeposited on (100) SrTiO3 substrates by D<missing VAR>C sputtering technique in differentatmosphere.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

CuO4
###Magneto-transport measurements on Nd$_{1.83}$Ce$_{0.17}$CuO$_{4\pmδ}$ thin films|Anita Guarino,Antonio Leo,Francesco Avitabile,Nadia Martucciello,Adolfo Avella,Gaia Grimaldi,Alfonso Romano,Paola Romano,Angela Nigro###
(1105833, 1105835)
 Nd2-xCex<missing VAR>CuO4pmdelta (NCCO) epitaxial thin films have beendeposited on (100) SrTiO3 substrates by D<missing VAR>C sputtering technique in differentatmosphere.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(NCCO)
###Magneto-transport measurements on Nd$_{1.83}$Ce$_{0.17}$CuO$_{4\pmδ}$ thin films|Anita Guarino,Antonio Leo,Francesco Avitabile,Nadia Martucciello,Adolfo Avella,Gaia Grimaldi,Alfonso Romano,Paola Romano,Angela Nigro###
(1105839, 1105844)
 Nd2-xCex<missing VAR>CuO4pmdelta (NCCO) epitaxial thin films have beendeposited on (100) SrTiO3 substrates by D<missing VAR>C sputtering technique in differentatmosphere.
Featurization successful!
0,0,0,0,0,0.5,0.25,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Magneto-transport measurements on Nd$_{1.83}$Ce$_{0.17}$CuO$_{4\pmδ}$ thin films|Anita Guarino,Antonio Leo,Francesco Avitabile,Nadia Martucciello,Adolfo Avella,Gaia Grimaldi,Alfonso Romano,Paola Romano,Angela Nigro###
(1105865, 1105868)
 Nd2-xCex<missing VAR>CuO4pmdelta (NCCO) epitaxial thin films have beendeposited on (100) SrTiO3 substrates by D<missing VAR>C sputtering technique in differentatmosphere.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Magneto-transport measurements on Nd$_{1.83}$Ce$_{0.17}$CuO$_{4\pmδ}$ thin films|Anita Guarino,Antonio Leo,Francesco Avitabile,Nadia Martucciello,Adolfo Avella,Gaia Grimaldi,Alfonso Romano,Paola Romano,Angela Nigro###
(1105875, 1105875)
 Nd2-xCex<missing VAR>CuO4pmdelta (NCCO) epitaxial thin films have beendeposited on (100) SrTiO3 substrates by D<missing VAR>C sputtering technique in differentatmosphere.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NCCO
###Magneto-transport measurements on Nd$_{1.83}$Ce$_{0.17}$CuO$_{4\pmδ}$ thin films|Anita Guarino,Antonio Leo,Francesco Avitabile,Nadia Martucciello,Adolfo Avella,Gaia Grimaldi,Alfonso Romano,Paola Romano,Angela Nigro###
(1106007, 1106010)
 It is commonly acceptedthat the higher anisotropic properties of NCCO crystalline cell with respect tothe hole doped YBCO and L<missing VAR>SCO and the electric conduction mainly confined in theCuO2 plane, strongly support the two-dimensional (2D) character of thecurrent transport in this system.
Featurization terminated normally.
0,0,0,0,0,0.5,0.25,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YBCO
###Magneto-transport measurements on Nd$_{1.83}$Ce$_{0.17}$CuO$_{4\pmδ}$ thin films|Anita Guarino,Antonio Leo,Francesco Avitabile,Nadia Martucciello,Adolfo Avella,Gaia Grimaldi,Alfonso Romano,Paola Romano,Angela Nigro###
(1106029, 1106032)
 It is commonly acceptedthat the higher anisotropic properties of NCCO crystalline cell with respect tothe hole doped YBCO and L<missing VAR>SCO and the electric conduction mainly confined in theCuO2 plane, strongly support the two-dimensional (2D) character of thecurrent transport in this system.
Featurization terminated normally.
0,0,0,0,0.25,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SCO
###Magneto-transport measurements on Nd$_{1.83}$Ce$_{0.17}$CuO$_{4\pmδ}$ thin films|Anita Guarino,Antonio Leo,Francesco Avitabile,Nadia Martucciello,Adolfo Avella,Gaia Grimaldi,Alfonso Romano,Paola Romano,Angela Nigro###
(1106037, 1106039)
 It is commonly acceptedthat the higher anisotropic properties of NCCO crystalline cell with respect tothe hole doped YBCO and L<missing VAR>SCO and the electric conduction mainly confined in theCuO2 plane, strongly support the two-dimensional (2D) character of thecurrent transport in this system.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CuO2
###Magneto-transport measurements on Nd$_{1.83}$Ce$_{0.17}$CuO$_{4\pmδ}$ thin films|Anita Guarino,Antonio Leo,Francesco Avitabile,Nadia Martucciello,Adolfo Avella,Gaia Grimaldi,Alfonso Romano,Paola Romano,Angela Nigro###
(1106058, 1106060)
 It is commonly acceptedthat the higher anisotropic properties of NCCO crystalline cell with respect tothe hole doped YBCO and L<missing VAR>SCO and the electric conduction mainly confined in theCuO2 plane, strongly support the two-dimensional (2D) character of thecurrent transport in this system.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NCCO
###Magneto-transport measurements on Nd$_{1.83}$Ce$_{0.17}$CuO$_{4\pmδ}$ thin films|Anita Guarino,Antonio Leo,Francesco Avitabile,Nadia Martucciello,Adolfo Avella,Gaia Grimaldi,Alfonso Romano,Paola Romano,Angela Nigro###
(1106144, 1106147)
 Results on the temperature dependence of theresistance, as well as on the magnetoresistance and the Hall coefficient,obtained on epitaxial NCCO thin films in the over-doped region (x<missing VAR>ge0.15) ofthe phase diagram are presented and discussed.
Featurization terminated normally.
0,0,0,0,0,0.5,0.25,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbP
###Pressure tuning the Fermi-surface topology of the Weyl semimetal NbP|R. D. dos Reis,S. C. Wu,Y. Sun,M. O. Ajeesh,C. Shekhar,M. Schmidt,C. Felser,B. Yan,M. Nicklas###
(1106215, 1106216)
Pressure tuning the Fermi-surface topology of the Weyl semimetal NbP.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbP
###Pressure tuning the Fermi-surface topology of the Weyl semimetal NbP|R. D. dos Reis,S. C. Wu,Y. Sun,M. O. Ajeesh,C. Shekhar,M. Schmidt,C. Felser,B. Yan,M. Nicklas###
(1106250, 1106251)
 We report on the pressure evolution of the Fermi surface topology of the Weylsemimetal NbP, probed by Shubnikov-de Haas oscillations in themagnetoresistance combined with ab-initio calculations of the band-structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pa
###Pressure tuning the Fermi-surface topology of the Weyl semimetal NbP|R. D. dos Reis,S. C. Wu,Y. Sun,M. O. Ajeesh,C. Shekhar,M. Schmidt,C. Felser,B. Yan,M. Nicklas###
(1106345, 1106345)
Although we observe a drastic effect on the amplitudes of the quantumoscillations, the frequencies only exhibit a weak pressure dependence up to 2.8G<missing VAR>Pa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbP
###Pressure tuning the Fermi-surface topology of the Weyl semimetal NbP|R. D. dos Reis,S. C. Wu,Y. Sun,M. O. Ajeesh,C. Shekhar,M. Schmidt,C. Felser,B. Yan,M. Nicklas###
(1106445, 1106446)
 Our findings evidenced the stability of the electronic band structureof NbP and demonstrate the power of combining quantum-oscillation studies andband-structure calculations to investigate pressure effects on theFermi-surface topology in Weyl semimetals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YSb
###Magnetoresistance and Shubnikov-de Hass oscillation in YSb|Qiao-He Yu,Yi-Yan Wang,Rui Lou,Peng-Jie Guo,Sheng Xu,Kai Liu,Shancai Wang,Tian-Long Xia###
(1106523, 1106524)
Magnetoresistance and Shubnikov-de Hass oscillation in YSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[203.0, 4, '%', 5]

YSb
###Magnetoresistance and Shubnikov-de Hass oscillation in YSb|Qiao-He Yu,Yi-Yan Wang,Rui Lou,Peng-Jie Guo,Sheng Xu,Kai Liu,Shancai Wang,Tian-Long Xia###
(1106527, 1106528)
 YSb crystals are grown and the transport properties under magnetic field aremeasured.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[199.0, 4, '%', 4]

At
###Magnetoresistance and Shubnikov-de Hass oscillation in YSb|Qiao-He Yu,Yi-Yan Wang,Rui Lou,Peng-Jie Guo,Sheng Xu,Kai Liu,Shancai Wang,Tian-Long Xia###
(1106678, 1106678)
 At low temperature (2.5 K) and high field (14 T), thetransverse magnetoresistance (MR) is quite large (3.47 times 104% ).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 4, '%', 0]

K
###Magnetoresistance and Shubnikov-de Hass oscillation in YSb|Qiao-He Yu,Yi-Yan Wang,Rui Lou,Peng-Jie Guo,Sheng Xu,Kai Liu,Shancai Wang,Tian-Long Xia###
(1106687, 1106687)
 At low temperature (2.5 K) and high field (14 T), thetransverse magnetoresistance (MR) is quite large (3.47 times 104% ).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 4, '%', 0]

In
###Magnetoresistance and Shubnikov-de Hass oscillation in YSb|Qiao-He Yu,Yi-Yan Wang,Rui Lou,Peng-Jie Guo,Sheng Xu,Kai Liu,Shancai Wang,Tian-Long Xia###
(1106733, 1106733)
 Inaddition, Shubnikov-de Haas (SdH) oscillation has also been observed in YSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 4, '%', 1]

H
###Magnetoresistance and Shubnikov-de Hass oscillation in YSb|Qiao-He Yu,Yi-Yan Wang,Rui Lou,Peng-Jie Guo,Sheng Xu,Kai Liu,Shancai Wang,Tian-Long Xia###
(1106747, 1106747)
 Inaddition, Shubnikov-de Haas (SdH) oscillation has also been observed in YSb.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 4, '%', 1]

YSb
###Magnetoresistance and Shubnikov-de Hass oscillation in YSb|Qiao-He Yu,Yi-Yan Wang,Rui Lou,Peng-Jie Guo,Sheng Xu,Kai Liu,Shancai Wang,Tian-Long Xia###
(1106762, 1106763)
 Inaddition, Shubnikov-de Haas (SdH) oscillation has also been observed in YSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 4, '%', 1]

FF
###Magnetoresistance and Shubnikov-de Hass oscillation in YSb|Qiao-He Yu,Yi-Yan Wang,Rui Lou,Peng-Jie Guo,Sheng Xu,Kai Liu,Shancai Wang,Tian-Long Xia###
(1106815, 1106816)
Periodic behavior of the oscillation amplitude reveals the related informationabout Fermi surface and two major oscillation frequencies can be obtained fromthe FFT<missing VAR> spectra of the oscillations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 4, '%', 2]

H
###Magnetoresistance and Shubnikov-de Hass oscillation in YSb|Qiao-He Yu,Yi-Yan Wang,Rui Lou,Peng-Jie Guo,Sheng Xu,Kai Liu,Shancai Wang,Tian-Long Xia###
(1106841, 1106841)
 The trivial Berry phase extracted from SdHoscillation, band structure revealed by angle-resolved photoemissionspectroscopy (ARPES) and first-principles calculations demonstrate that YSb isa topologically trivial material.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 4, '%', 3]

S
###Magnetoresistance and Shubnikov-de Hass oscillation in YSb|Qiao-He Yu,Yi-Yan Wang,Rui Lou,Peng-Jie Guo,Sheng Xu,Kai Liu,Shancai Wang,Tian-Long Xia###
(1106869, 1106869)
 The trivial Berry phase extracted from SdHoscillation, band structure revealed by angle-resolved photoemissionspectroscopy (ARPES) and first-principles calculations demonstrate that YSb isa topologically trivial material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 4, '%', 3]

YSb
###Magnetoresistance and Shubnikov-de Hass oscillation in YSb|Qiao-He Yu,Yi-Yan Wang,Rui Lou,Peng-Jie Guo,Sheng Xu,Kai Liu,Shancai Wang,Tian-Long Xia###
(1106884, 1106885)
 The trivial Berry phase extracted from SdHoscillation, band structure revealed by angle-resolved photoemissionspectroscopy (ARPES) and first-principles calculations demonstrate that YSb isa topologically trivial material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 4, '%', 3]

HIV
###Detection of HIV-1 antigen based on magnetic tunnel junction sensor and magnetic nanoparticles|L. Li,K. Y. Mak,Y. Zhou,W. W. Wang,P. W. T. Pong###
(1106911, 1106913)
Detection of HIV-1 antigen based on magnetic tunnel junction sensor and magnetic nanoparticles.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Detection of HIV-1 antigen based on magnetic tunnel junction sensor and magnetic nanoparticles|L. Li,K. Y. Mak,Y. Zhou,W. W. Wang,P. W. T. Pong###
(1106938, 1106938)
 In recent years, it is evidenced that the individuals newly infected HIV aretransmitting the virus prior to knowing their HIV status.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HIV
###Detection of HIV-1 antigen based on magnetic tunnel junction sensor and magnetic nanoparticles|L. Li,K. Y. Mak,Y. Zhou,W. W. Wang,P. W. T. Pong###
(1106961, 1106963)
 In recent years, it is evidenced that the individuals newly infected HIV aretransmitting the virus prior to knowing their HIV status.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HIV
###Detection of HIV-1 antigen based on magnetic tunnel junction sensor and magnetic nanoparticles|L. Li,K. Y. Mak,Y. Zhou,W. W. Wang,P. W. T. Pong###
(1106982, 1106984)
 In recent years, it is evidenced that the individuals newly infected HIV aretransmitting the virus prior to knowing their HIV status.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HIV
###Detection of HIV-1 antigen based on magnetic tunnel junction sensor and magnetic nanoparticles|L. Li,K. Y. Mak,Y. Zhou,W. W. Wang,P. W. T. Pong###
(1107006, 1107008)
 Identifyingindividuals that are early in infection with HIV antibody negative (windowperiod) remains problematic.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Detection of HIV-1 antigen based on magnetic tunnel junction sensor and magnetic nanoparticles|L. Li,K. Y. Mak,Y. Zhou,W. W. Wang,P. W. T. Pong###
(1107026, 1107026)
 In the newly infected individuals, HIV antigen p<missing VAR>24is usually present in their serum or plasma 7-10 days before the HIV antibody.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HIV
###Detection of HIV-1 antigen based on magnetic tunnel junction sensor and magnetic nanoparticles|L. Li,K. Y. Mak,Y. Zhou,W. W. Wang,P. W. T. Pong###
(1107037, 1107039)
 In the newly infected individuals, HIV antigen p<missing VAR>24is usually present in their serum or plasma 7-10 days before the HIV antibody.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HIV
###Detection of HIV-1 antigen based on magnetic tunnel junction sensor and magnetic nanoparticles|L. Li,K. Y. Mak,Y. Zhou,W. W. Wang,P. W. T. Pong###
(1107073, 1107075)
 In the newly infected individuals, HIV antigen p<missing VAR>24is usually present in their serum or plasma 7-10 days before the HIV antibody.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Detection of HIV-1 antigen based on magnetic tunnel junction sensor and magnetic nanoparticles|L. Li,K. Y. Mak,Y. Zhou,W. W. Wang,P. W. T. Pong###
(1107224, 1107224)
 In this study, a p<missing VAR>24 detection assayusing MgO-based magnetic tunnel junction (MTJ) sensor and 20-nm magneticnanoparticles is reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Detection of HIV-1 antigen based on magnetic tunnel junction sensor and magnetic nanoparticles|L. Li,K. Y. Mak,Y. Zhou,W. W. Wang,P. W. T. Pong###
(1107243, 1107244)
 In this study, a p<missing VAR>24 detection assayusing MgO-based magnetic tunnel junction (MTJ) sensor and 20-nm magneticnanoparticles is reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaSb
###Compensated semimetal LaSb with unsaturated magnetoresistance|L. -K. Zeng,R. Lou,D. -S. Wu,Q. N. Xu,P. -J. Guo,L. -Y. Kong,Y. -G. Zhong,J. -Z. Ma,B. -B. Fu,P. Richard,P. Wang,G. T. Liu,L. Lu,Y. -B. Huang,C. Fang,S. -S. Sun,Q. Wang,L. Wang,Y. -G. Shi,H. M. Weng,H. -C. Lei,K. Liu,S. -C. Wang,T. Qian,J. -L. Luo,H. Ding###
(1107290, 1107291)
Compensated semimetal LaSb with unsaturated magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 40, 'T', 1]

LaSb
###Compensated semimetal LaSb with unsaturated magnetoresistance|L. -K. Zeng,R. Lou,D. -S. Wu,Q. N. Xu,P. -J. Guo,L. -Y. Kong,Y. -G. Zhong,J. -Z. Ma,B. -B. Fu,P. Richard,P. Wang,G. T. Liu,L. Lu,Y. -B. Huang,C. Fang,S. -S. Sun,Q. Wang,L. Wang,Y. -G. Shi,H. M. Weng,H. -C. Lei,K. Liu,S. -C. Wang,T. Qian,J. -L. Luo,H. Ding###
(1107343, 1107344)
 By combining angle-resolved photoemission spectroscopy and quantumoscillation measurements, we performed a comprehensive investigation on theelectronic structure of LaSb, which exhibits near-quadratic extremely largemagnetoresistance (XMR) without any sign of saturation at magnetic fields ashigh as 40 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 40, 'T', 0]

F
###Compensated semimetal LaSb with unsaturated magnetoresistance|L. -K. Zeng,R. Lou,D. -S. Wu,Q. N. Xu,P. -J. Guo,L. -Y. Kong,Y. -G. Zhong,J. -Z. Ma,B. -B. Fu,P. Richard,P. Wang,G. T. Liu,L. Lu,Y. -B. Huang,C. Fang,S. -S. Sun,Q. Wang,L. Wang,Y. -G. Shi,H. M. Weng,H. -C. Lei,K. Liu,S. -C. Wang,T. Qian,J. -L. Luo,H. Ding###
(1107419, 1107419)
 We clearly resolve one spherical and one intersecting-ellipsoidalhole Fermi surfaces (FSs) at the Brillouin zone (BZ) center Gamma and oneellipsoidal electron FS at the BZ<missing VAR> boundary X<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 40, 'T', 1]

B
###Compensated semimetal LaSb with unsaturated magnetoresistance|L. -K. Zeng,R. Lou,D. -S. Wu,Q. N. Xu,P. -J. Guo,L. -Y. Kong,Y. -G. Zhong,J. -Z. Ma,B. -B. Fu,P. Richard,P. Wang,G. T. Liu,L. Lu,Y. -B. Huang,C. Fang,S. -S. Sun,Q. Wang,L. Wang,Y. -G. Shi,H. M. Weng,H. -C. Lei,K. Liu,S. -C. Wang,T. Qian,J. -L. Luo,H. Ding###
(1107432, 1107432)
 We clearly resolve one spherical and one intersecting-ellipsoidalhole Fermi surfaces (FSs) at the Brillouin zone (BZ) center Gamma and oneellipsoidal electron FS at the BZ<missing VAR> boundary X<missing VAR>.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 40, 'T', 1]

FS
###Compensated semimetal LaSb with unsaturated magnetoresistance|L. -K. Zeng,R. Lou,D. -S. Wu,Q. N. Xu,P. -J. Guo,L. -Y. Kong,Y. -G. Zhong,J. -Z. Ma,B. -B. Fu,P. Richard,P. Wang,G. T. Liu,L. Lu,Y. -B. Huang,C. Fang,S. -S. Sun,Q. Wang,L. Wang,Y. -G. Shi,H. M. Weng,H. -C. Lei,K. Liu,S. -C. Wang,T. Qian,J. -L. Luo,H. Ding###
(1107449, 1107450)
 We clearly resolve one spherical and one intersecting-ellipsoidalhole Fermi surfaces (FSs) at the Brillouin zone (BZ) center Gamma and oneellipsoidal electron FS at the BZ<missing VAR> boundary X<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 40, 'T', 1]

B
###Compensated semimetal LaSb with unsaturated magnetoresistance|L. -K. Zeng,R. Lou,D. -S. Wu,Q. N. Xu,P. -J. Guo,L. -Y. Kong,Y. -G. Zhong,J. -Z. Ma,B. -B. Fu,P. Richard,P. Wang,G. T. Liu,L. Lu,Y. -B. Huang,C. Fang,S. -S. Sun,Q. Wang,L. Wang,Y. -G. Shi,H. M. Weng,H. -C. Lei,K. Liu,S. -C. Wang,T. Qian,J. -L. Luo,H. Ding###
(1107456, 1107456)
 We clearly resolve one spherical and one intersecting-ellipsoidalhole Fermi surfaces (FSs) at the Brillouin zone (BZ) center Gamma and oneellipsoidal electron FS at the BZ<missing VAR> boundary X<missing VAR>.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 40, 'T', 1]

FS
###Compensated semimetal LaSb with unsaturated magnetoresistance|L. -K. Zeng,R. Lou,D. -S. Wu,Q. N. Xu,P. -J. Guo,L. -Y. Kong,Y. -G. Zhong,J. -Z. Ma,B. -B. Fu,P. Richard,P. Wang,G. T. Liu,L. Lu,Y. -B. Huang,C. Fang,S. -S. Sun,Q. Wang,L. Wang,Y. -G. Shi,H. M. Weng,H. -C. Lei,K. Liu,S. -C. Wang,T. Qian,J. -L. Luo,H. Ding###
(1107483, 1107484)
 The hole and electron carrierscalculated from the enclosed FS volumes are perfectly compensated, and thecarrier compensation is unaffected by temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 40, 'T', 2]

LaSb
###Compensated semimetal LaSb with unsaturated magnetoresistance|L. -K. Zeng,R. Lou,D. -S. Wu,Q. N. Xu,P. -J. Guo,L. -Y. Kong,Y. -G. Zhong,J. -Z. Ma,B. -B. Fu,P. Richard,P. Wang,G. T. Liu,L. Lu,Y. -B. Huang,C. Fang,S. -S. Sun,Q. Wang,L. Wang,Y. -G. Shi,H. M. Weng,H. -C. Lei,K. Liu,S. -C. Wang,T. Qian,J. -L. Luo,H. Ding###
(1107521, 1107522)
 We further reveal that LaSbis topologically trivial but share many similarities with the Weyl semimetalTaAs family in the bulk electronic structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 40, 'T', 3]

TaAs
###Compensated semimetal LaSb with unsaturated magnetoresistance|L. -K. Zeng,R. Lou,D. -S. Wu,Q. N. Xu,P. -J. Guo,L. -Y. Kong,Y. -G. Zhong,J. -Z. Ma,B. -B. Fu,P. Richard,P. Wang,G. T. Liu,L. Lu,Y. -B. Huang,C. Fang,S. -S. Sun,Q. Wang,L. Wang,Y. -G. Shi,H. M. Weng,H. -C. Lei,K. Liu,S. -C. Wang,T. Qian,J. -L. Luo,H. Ding###
(1107548, 1107549)
 We further reveal that LaSbis topologically trivial but share many similarities with the Weyl semimetalTaAs family in the bulk electronic structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 40, 'T', 3]

YI
###Platinum/Yttrium Iron Garnet Inverted Structures for Spin Current Transport|Mohammed Aldosary,Junxue Li,Chi Tang,Yadong Xu,Jian-Guo Zheng,Krassimir N. Bozhilov,Jing Shi###
(1107660, 1107661)
 30-80 nm thick yttrium iron garnet (YIG) films are grown by pulsed laserdeposition on a 5 nm thick sputtered Pt atop gadolinium gallium garnetsubstrate (GGG) (110).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 5, 'nm', 0],[146.0, 0.12, 'nm', 2],[224.0, 1, '>', 4],[245.0, 7.5, 'Oe', 4],[248.0, 9.32, 'GHz', 4]

Pt
###Platinum/Yttrium Iron Garnet Inverted Structures for Spin Current Transport|Mohammed Aldosary,Junxue Li,Chi Tang,Yadong Xu,Jian-Guo Zheng,Krassimir N. Bozhilov,Jing Shi###
(1107689, 1107689)
 30-80 nm thick yttrium iron garnet (YIG) films are grown by pulsed laserdeposition on a 5 nm thick sputtered Pt atop gadolinium gallium garnetsubstrate (GGG) (110).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 5, 'nm', 0],[118.0, 0.12, 'nm', 2],[196.0, 1, '>', 4],[217.0, 7.5, 'Oe', 4],[220.0, 9.32, 'GHz', 4]

YI
###Platinum/Yttrium Iron Garnet Inverted Structures for Spin Current Transport|Mohammed Aldosary,Junxue Li,Chi Tang,Yadong Xu,Jian-Guo Zheng,Krassimir N. Bozhilov,Jing Shi###
(1107731, 1107732)
 Upon post-growth rapid thermal annealing, single crystalYIG<missing VAR>(110) emerges as if it were epitaxially grown on GGG(110) despite thepresence of the intermediate Pt film.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 5, 'nm', 1],[75.0, 0.12, 'nm', 1],[153.0, 1, '>', 3],[174.0, 7.5, 'Oe', 3],[177.0, 9.32, 'GHz', 3]

Pt
###Platinum/Yttrium Iron Garnet Inverted Structures for Spin Current Transport|Mohammed Aldosary,Junxue Li,Chi Tang,Yadong Xu,Jian-Guo Zheng,Krassimir N. Bozhilov,Jing Shi###
(1107774, 1107774)
 Upon post-growth rapid thermal annealing, single crystalYIG<missing VAR>(110) emerges as if it were epitaxially grown on GGG(110) despite thepresence of the intermediate Pt film.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 5, 'nm', 1],[33.0, 0.12, 'nm', 1],[111.0, 1, '>', 3],[132.0, 7.5, 'Oe', 3],[135.0, 9.32, 'GHz', 3]

YI
###Platinum/Yttrium Iron Garnet Inverted Structures for Spin Current Transport|Mohammed Aldosary,Junxue Li,Chi Tang,Yadong Xu,Jian-Guo Zheng,Krassimir N. Bozhilov,Jing Shi###
(1107781, 1107782)
 The YIG<missing VAR> surface shows atomic steps withthe root-mean-square roughness of 0.12 nm on flat terraces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 5, 'nm', 2],[25.0, 0.12, 'nm', 0],[103.0, 1, '>', 2],[124.0, 7.5, 'Oe', 2],[127.0, 9.32, 'GHz', 2]

Pt/YI
###Platinum/Yttrium Iron Garnet Inverted Structures for Spin Current Transport|Mohammed Aldosary,Junxue Li,Chi Tang,Yadong Xu,Jian-Guo Zheng,Krassimir N. Bozhilov,Jing Shi###
(1107818, 1107821)
 Both Pt/YIG<missing VAR> andGGG/Pt interfaces are atomically sharp.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[135.0, 5, 'nm', 3],[11.0, 0.12, 'nm', 1],[64.0, 1, '>', 1],[85.0, 7.5, 'Oe', 1],[88.0, 9.32, 'GHz', 1]

Pt
###Platinum/Yttrium Iron Garnet Inverted Structures for Spin Current Transport|Mohammed Aldosary,Junxue Li,Chi Tang,Yadong Xu,Jian-Guo Zheng,Krassimir N. Bozhilov,Jing Shi###
(1107831, 1107831)
 Both Pt/YIG<missing VAR> andGGG/Pt interfaces are atomically sharp.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 5, 'nm', 3],[24.0, 0.12, 'nm', 1],[54.0, 1, '>', 1],[75.0, 7.5, 'Oe', 1],[78.0, 9.32, 'GHz', 1]

YI
###Platinum/Yttrium Iron Garnet Inverted Structures for Spin Current Transport|Mohammed Aldosary,Junxue Li,Chi Tang,Yadong Xu,Jian-Guo Zheng,Krassimir N. Bozhilov,Jing Shi###
(1107846, 1107847)
 The resulting YIG<missing VAR>(110) films show clearin-plane uniaxial magnetic anisotropy with a well-defined easy axis along <001>and a peak-to-peak ferromagnetic resonance linewidth of 7.5 Oe at 9.32 GHz,similar to YIG<missing VAR> epitaxilly grown on GGG.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 5, 'nm', 4],[39.0, 0.12, 'nm', 2],[38.0, 1, '>', 0],[59.0, 7.5, 'Oe', 0],[62.0, 9.32, 'GHz', 0]

YI
###Platinum/Yttrium Iron Garnet Inverted Structures for Spin Current Transport|Mohammed Aldosary,Junxue Li,Chi Tang,Yadong Xu,Jian-Guo Zheng,Krassimir N. Bozhilov,Jing Shi###
(1107917, 1107918)
 The resulting YIG<missing VAR>(110) films show clearin-plane uniaxial magnetic anisotropy with a well-defined easy axis along <001>and a peak-to-peak ferromagnetic resonance linewidth of 7.5 Oe at 9.32 GHz,similar to YIG<missing VAR> epitaxilly grown on GGG.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[234.0, 5, 'nm', 4],[110.0, 0.12, 'nm', 2],[32.0, 1, '>', 0],[11.0, 7.5, 'Oe', 0],[8.0, 9.32, 'GHz', 0]

Pt/YI
###Platinum/Yttrium Iron Garnet Inverted Structures for Spin Current Transport|Mohammed Aldosary,Junxue Li,Chi Tang,Yadong Xu,Jian-Guo Zheng,Krassimir N. Bozhilov,Jing Shi###
(1107964, 1107967)
 Both spin Hall magnetoresistance andlongitudinal spin Seebeck effects in the inverted bilayers indicate excellentPt/YIG<missing VAR> interface quality.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[281.0, 5, 'nm', 5],[157.0, 0.12, 'nm', 3],[79.0, 1, '>', 1],[58.0, 7.5, 'Oe', 1],[55.0, 9.32, 'GHz', 1]

F
###Crystal Structure Manipulation of the Exchange Bias in an Antiferromagnetic Film|Wei Yuan,Tang Su,Qi Song,Wenyu Xing,Yangyang Chen,Tianyu Wang,Zhangyuan Zhang,Xiumei Ma,Peng Gao,Jing Shi,Wei Han###
(1108051, 1108051)
 Exchange bias is one of the most extensively studied phenomena in magnetism,since it exerts a unidirectional anisotropy to a ferromagnet (FM) when coupledto an antiferromagnet (AFM) and the control of the exchange bias is thereforevery important for technological applications, such as magnetic random accessmemory and giant magnetoresistance sensors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Crystal Structure Manipulation of the Exchange Bias in an Antiferromagnetic Film|Wei Yuan,Tang Su,Qi Song,Wenyu Xing,Yangyang Chen,Tianyu Wang,Zhangyuan Zhang,Xiumei Ma,Peng Gao,Jing Shi,Wei Han###
(1108068, 1108068)
 Exchange bias is one of the most extensively studied phenomena in magnetism,since it exerts a unidirectional anisotropy to a ferromagnet (FM) when coupledto an antiferromagnet (AFM) and the control of the exchange bias is thereforevery important for technological applications, such as magnetic random accessmemory and giant magnetoresistance sensors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Crystal Structure Manipulation of the Exchange Bias in an Antiferromagnetic Film|Wei Yuan,Tang Su,Qi Song,Wenyu Xing,Yangyang Chen,Tianyu Wang,Zhangyuan Zhang,Xiumei Ma,Peng Gao,Jing Shi,Wei Han###
(1108124, 1108124)
 In this letter, we report thecrystal structure manipulation of the exchange bias in epitaxial hcp Cr2O3films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr2O3
###Crystal Structure Manipulation of the Exchange Bias in an Antiferromagnetic Film|Wei Yuan,Tang Su,Qi Song,Wenyu Xing,Yangyang Chen,Tianyu Wang,Zhangyuan Zhang,Xiumei Ma,Peng Gao,Jing Shi,Wei Han###
(1108158, 1108161)
 In this letter, we report thecrystal structure manipulation of the exchange bias in epitaxial hcp Cr2O3films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr2O3
###Crystal Structure Manipulation of the Exchange Bias in an Antiferromagnetic Film|Wei Yuan,Tang Su,Qi Song,Wenyu Xing,Yangyang Chen,Tianyu Wang,Zhangyuan Zhang,Xiumei Ma,Peng Gao,Jing Shi,Wei Han###
(1108183, 1108186)
 By epitaxially growing twined (10-10) oriented Cr2O3 thin films, ofwhich the c<missing VAR> axis and spins of the Cr atoms lie in the film plane, wedemonstrate that the exchange bias between Cr2O3 and an adjacent permalloylayer is tuned to in-plane from out-of-plane that has been observed in (0001)oriented Cr2O3 films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr
###Crystal Structure Manipulation of the Exchange Bias in an Antiferromagnetic Film|Wei Yuan,Tang Su,Qi Song,Wenyu Xing,Yangyang Chen,Tianyu Wang,Zhangyuan Zhang,Xiumei Ma,Peng Gao,Jing Shi,Wei Han###
(1108212, 1108212)
 By epitaxially growing twined (10-10) oriented Cr2O3 thin films, ofwhich the c<missing VAR> axis and spins of the Cr atoms lie in the film plane, wedemonstrate that the exchange bias between Cr2O3 and an adjacent permalloylayer is tuned to in-plane from out-of-plane that has been observed in (0001)oriented Cr2O3 films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr2O3
###Crystal Structure Manipulation of the Exchange Bias in an Antiferromagnetic Film|Wei Yuan,Tang Su,Qi Song,Wenyu Xing,Yangyang Chen,Tianyu Wang,Zhangyuan Zhang,Xiumei Ma,Peng Gao,Jing Shi,Wei Han###
(1108242, 1108245)
 By epitaxially growing twined (10-10) oriented Cr2O3 thin films, ofwhich the c<missing VAR> axis and spins of the Cr atoms lie in the film plane, wedemonstrate that the exchange bias between Cr2O3 and an adjacent permalloylayer is tuned to in-plane from out-of-plane that has been observed in (0001)oriented Cr2O3 films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr2O3
###Crystal Structure Manipulation of the Exchange Bias in an Antiferromagnetic Film|Wei Yuan,Tang Su,Qi Song,Wenyu Xing,Yangyang Chen,Tianyu Wang,Zhangyuan Zhang,Xiumei Ma,Peng Gao,Jing Shi,Wei Han###
(1108293, 1108296)
 By epitaxially growing twined (10-10) oriented Cr2O3 thin films, ofwhich the c<missing VAR> axis and spins of the Cr atoms lie in the film plane, wedemonstrate that the exchange bias between Cr2O3 and an adjacent permalloylayer is tuned to in-plane from out-of-plane that has been observed in (0001)oriented Cr2O3 films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr
###Crystal Structure Manipulation of the Exchange Bias in an Antiferromagnetic Film|Wei Yuan,Tang Su,Qi Song,Wenyu Xing,Yangyang Chen,Tianyu Wang,Zhangyuan Zhang,Xiumei Ma,Peng Gao,Jing Shi,Wei Han###
(1108328, 1108328)
 This is owing to the collinear exchange coupling betweenthe spins of the Cr atoms and the adjacent FM<missing VAR> layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Crystal Structure Manipulation of the Exchange Bias in an Antiferromagnetic Film|Wei Yuan,Tang Su,Qi Song,Wenyu Xing,Yangyang Chen,Tianyu Wang,Zhangyuan Zhang,Xiumei Ma,Peng Gao,Jing Shi,Wei Han###
(1108338, 1108338)
 This is owing to the collinear exchange coupling betweenthe spins of the Cr atoms and the adjacent FM<missing VAR> layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PdCoO2
###Modelling the angle-dependent magnetoresistance oscillations of Fermi surfaces with hexagonal symmetry|Joseph C. A. Prentice,Amalia I. Coldea###
(1108701, 1108704)
 Our calculations make predictionsfor specific angle-dependent magnetotransport signatures in magnetic fieldsexpected for quasi-two dimensional hexagonal compounds similar to PdCoO2 andPtCoO2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PtCoO2
###Modelling the angle-dependent magnetoresistance oscillations of Fermi surfaces with hexagonal symmetry|Joseph C. A. Prentice,Amalia I. Coldea###
(1108709, 1108712)
 Our calculations make predictionsfor specific angle-dependent magnetotransport signatures in magnetic fieldsexpected for quasi-two dimensional hexagonal compounds similar to PdCoO2 andPtCoO2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt/YI
###Competing effects at Pt/YIG interfaces: spin Hall magnetoresistance, magnon excitations and magnetic frustration|Saül Vélez,Amilcar Bedoya-Pinto,Wenjing Yan,Luis E. Hueso,Fèlix Casanova###
(1108729, 1108732)
Competing effects at Pt/YIG<missing VAR> interfaces spin Hall magnetoresistance, magnon excitations and magnetic frustration.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

S
###Competing effects at Pt/YIG interfaces: spin Hall magnetoresistance, magnon excitations and magnetic frustration|Saül Vélez,Amilcar Bedoya-Pinto,Wenjing Yan,Luis E. Hueso,Fèlix Casanova###
(1108768, 1108768)
 We study the spin Hall magnetoresistance (SMR) and the magnon spin transport(MST) in Pt/Y3Fe5O12(YIG)-based devices with intentionally modified interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O12
###Competing effects at Pt/YIG interfaces: spin Hall magnetoresistance, magnon excitations and magnetic frustration|Saül Vélez,Amilcar Bedoya-Pinto,Wenjing Yan,Luis E. Hueso,Fèlix Casanova###
(1108798, 1108799)
 We study the spin Hall magnetoresistance (SMR) and the magnon spin transport(MST) in Pt/Y3Fe5O12(YIG)-based devices with intentionally modified interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YI
###Competing effects at Pt/YIG interfaces: spin Hall magnetoresistance, magnon excitations and magnetic frustration|Saül Vélez,Amilcar Bedoya-Pinto,Wenjing Yan,Luis E. Hueso,Fèlix Casanova###
(1108801, 1108802)
 We study the spin Hall magnetoresistance (SMR) and the magnon spin transport(MST) in Pt/Y3Fe5O12(YIG)-based devices with intentionally modified interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YI
###Competing effects at Pt/YIG interfaces: spin Hall magnetoresistance, magnon excitations and magnetic frustration|Saül Vélez,Amilcar Bedoya-Pinto,Wenjing Yan,Luis E. Hueso,Fèlix Casanova###
(1108838, 1108839)
Our measurements show that the surface treatment of the YIG<missing VAR> film results in aslight enhancement of the spin-mixing conductance and an extraordinary increasein the efficiency of the spin-to-magnon excitations at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YI
###Competing effects at Pt/YIG interfaces: spin Hall magnetoresistance, magnon excitations and magnetic frustration|Saül Vélez,Amilcar Bedoya-Pinto,Wenjing Yan,Luis E. Hueso,Fèlix Casanova###
(1108908, 1108909)
 Thesurface of the YIG<missing VAR> film develops a surface magnetic frustration at lowtemperatures, causing a sign change of the SMR and a dramatic suppression ofthe MST.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Competing effects at Pt/YIG interfaces: spin Hall magnetoresistance, magnon excitations and magnetic frustration|Saül Vélez,Amilcar Bedoya-Pinto,Wenjing Yan,Luis E. Hueso,Fèlix Casanova###
(1108944, 1108944)
 Thesurface of the YIG<missing VAR> film develops a surface magnetic frustration at lowtemperatures, causing a sign change of the SMR and a dramatic suppression ofthe MST.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Competing effects at Pt/YIG interfaces: spin Hall magnetoresistance, magnon excitations and magnetic frustration|Saül Vélez,Amilcar Bedoya-Pinto,Wenjing Yan,Luis E. Hueso,Fèlix Casanova###
(1108974, 1108974)
 Our results evidence that SMR and MST could be used to exploremagnetic properties of surfaces, including those with complex magnetictextures, and stress the critical importance of the non-magnetic/ferromagneticinterface properties in the performance of the resulting spintronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ge1-x
###Origin of the large positive magnetoresistance in Ge1-xMnx granular thin films|Yuki K. Wakabayashi,Ryota Akiyama,Yukiharu Takeda,Masafumi Horio,Goro Shibata,Shoya Sakamoto,Yoshisuke Ban,Yuji Saitoh,Hiroshi Yamagami,Atsushi Fujimori,Masaaki Tanaka,Shinobu Ohya###
(1109082, 1109085)
Origin of the large positive magnetoresistance in Ge1-xMnx granular thin films.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

GeMn
###Origin of the large positive magnetoresistance in Ge1-xMnx granular thin films|Yuki K. Wakabayashi,Ryota Akiyama,Yukiharu Takeda,Masafumi Horio,Goro Shibata,Shoya Sakamoto,Yoshisuke Ban,Yuji Saitoh,Hiroshi Yamagami,Atsushi Fujimori,Masaaki Tanaka,Shinobu Ohya###
(1109095, 1109096)
 GeMn granular thin films are a unique and promising material for spintronicsapplications due to large positive magnetoresistance (MR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GeMn
###Origin of the large positive magnetoresistance in Ge1-xMnx granular thin films|Yuki K. Wakabayashi,Ryota Akiyama,Yukiharu Takeda,Masafumi Horio,Goro Shibata,Shoya Sakamoto,Yoshisuke Ban,Yuji Saitoh,Hiroshi Yamagami,Atsushi Fujimori,Masaaki Tanaka,Shinobu Ohya###
(1109146, 1109147)
 Previous studies onGeMn have suggested that the large MR is related to nanospinodal decompositionof GeMn into Mn-rich ferromagnetic nanoparticles and Mn-poor paramagneticmatrix.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GeMn
###Origin of the large positive magnetoresistance in Ge1-xMnx granular thin films|Yuki K. Wakabayashi,Ryota Akiyama,Yukiharu Takeda,Masafumi Horio,Goro Shibata,Shoya Sakamoto,Yoshisuke Ban,Yuji Saitoh,Hiroshi Yamagami,Atsushi Fujimori,Masaaki Tanaka,Shinobu Ohya###
(1109175, 1109176)
 Previous studies onGeMn have suggested that the large MR is related to nanospinodal decompositionof GeMn into Mn-rich ferromagnetic nanoparticles and Mn-poor paramagneticmatrix.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Origin of the large positive magnetoresistance in Ge1-xMnx granular thin films|Yuki K. Wakabayashi,Ryota Akiyama,Yukiharu Takeda,Masafumi Horio,Goro Shibata,Shoya Sakamoto,Yoshisuke Ban,Yuji Saitoh,Hiroshi Yamagami,Atsushi Fujimori,Masaaki Tanaka,Shinobu Ohya###
(1109180, 1109180)
 Previous studies onGeMn have suggested that the large MR is related to nanospinodal decompositionof GeMn into Mn-rich ferromagnetic nanoparticles and Mn-poor paramagneticmatrix.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Origin of the large positive magnetoresistance in Ge1-xMnx granular thin films|Yuki K. Wakabayashi,Ryota Akiyama,Yukiharu Takeda,Masafumi Horio,Goro Shibata,Shoya Sakamoto,Yoshisuke Ban,Yuji Saitoh,Hiroshi Yamagami,Atsushi Fujimori,Masaaki Tanaka,Shinobu Ohya###
(1109190, 1109190)
 Previous studies onGeMn have suggested that the large MR is related to nanospinodal decompositionof GeMn into Mn-rich ferromagnetic nanoparticles and Mn-poor paramagneticmatrix.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Origin of the large positive magnetoresistance in Ge1-xMnx granular thin films|Yuki K. Wakabayashi,Ryota Akiyama,Yukiharu Takeda,Masafumi Horio,Goro Shibata,Shoya Sakamoto,Yoshisuke Ban,Yuji Saitoh,Hiroshi Yamagami,Atsushi Fujimori,Masaaki Tanaka,Shinobu Ohya###
(1109246, 1109246)
Here, using X<missing VAR>-ray magnetic circular dichroism (XMCD), which is extremelysensitive to the local magnetic state of each atom, we investigate the magneticproperties of the nanoparticles and the matrix in GeMn separately.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GeMn
###Origin of the large positive magnetoresistance in Ge1-xMnx granular thin films|Yuki K. Wakabayashi,Ryota Akiyama,Yukiharu Takeda,Masafumi Horio,Goro Shibata,Shoya Sakamoto,Yoshisuke Ban,Yuji Saitoh,Hiroshi Yamagami,Atsushi Fujimori,Masaaki Tanaka,Shinobu Ohya###
(1109302, 1109303)
Here, using X<missing VAR>-ray magnetic circular dichroism (XMCD), which is extremelysensitive to the local magnetic state of each atom, we investigate the magneticproperties of the nanoparticles and the matrix in GeMn separately.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Origin of the large positive magnetoresistance in Ge1-xMnx granular thin films|Yuki K. Wakabayashi,Ryota Akiyama,Yukiharu Takeda,Masafumi Horio,Goro Shibata,Shoya Sakamoto,Yoshisuke Ban,Yuji Saitoh,Hiroshi Yamagami,Atsushi Fujimori,Masaaki Tanaka,Shinobu Ohya###
(1109408, 1109408)
 This result indicates thatspin-polarized holes in the nanoparticles penetrate into the matrix and thatthese holes undergo spin-disorder magnetic scattering by the paramagnetic Mnatoms in the matrix, which induces the large MR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Bilayer splitting versus Fermi-surface warping as an origin of slow oscillations of in-plane magnetoresistance in rare-earth tritellurides|Pavel D. Grigoriev,Alexander A. Sinchenko,Pascal Lejay,Abdellali Hadj-Azzem,Joel Balay,Olivier Leynaud,Vladimir N. Zverev,Pierre Monceau###
(1109487, 1109487)
 Slow oscillations (SlO) of the in-plane magnetoresistance with a frequencyless than 4 T are observed in the rare-earth tritellurides and proposed as aneffective tool to explore the electronic structure in various stronglyanisotropic quasi-two-dimensional compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 4, 'T', 0]

O
###Bilayer splitting versus Fermi-surface warping as an origin of slow oscillations of in-plane magnetoresistance in rare-earth tritellurides|Pavel D. Grigoriev,Alexander A. Sinchenko,Pascal Lejay,Abdellali Hadj-Azzem,Joel Balay,Olivier Leynaud,Vladimir N. Zverev,Pierre Monceau###
(1109586, 1109586)
 Contrary to the usualShubnikov-de-Haas oscillations, SlO originate not from small Fermi-surfacepockets, but from the entanglement of close frequencies due to a finiteinterlayer transfer integral, either between the two Te planes forming abilayer or between two adjacent bilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 4, 'T', 1]

Te
###Bilayer splitting versus Fermi-surface warping as an origin of slow oscillations of in-plane magnetoresistance in rare-earth tritellurides|Pavel D. Grigoriev,Alexander A. Sinchenko,Pascal Lejay,Abdellali Hadj-Azzem,Joel Balay,Olivier Leynaud,Vladimir N. Zverev,Pierre Monceau###
(1109642, 1109642)
 Contrary to the usualShubnikov-de-Haas oscillations, SlO originate not from small Fermi-surfacepockets, but from the entanglement of close frequencies due to a finiteinterlayer transfer integral, either between the two Te planes forming abilayer or between two adjacent bilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 4, 'T', 1]

O
###Bilayer splitting versus Fermi-surface warping as an origin of slow oscillations of in-plane magnetoresistance in rare-earth tritellurides|Pavel D. Grigoriev,Alexander A. Sinchenko,Pascal Lejay,Abdellali Hadj-Azzem,Joel Balay,Olivier Leynaud,Vladimir N. Zverev,Pierre Monceau###
(1109690, 1109690)
 From the observed angular dependenceof the frequency and the phase of SlO we argue that they originate from thebilayer splitting rather than from the Fermi-surface warping.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[180.0, 4, 'T', 2]

O
###Bilayer splitting versus Fermi-surface warping as an origin of slow oscillations of in-plane magnetoresistance in rare-earth tritellurides|Pavel D. Grigoriev,Alexander A. Sinchenko,Pascal Lejay,Abdellali Hadj-Azzem,Joel Balay,Olivier Leynaud,Vladimir N. Zverev,Pierre Monceau###
(1109729, 1109729)
 The SlO frequencygives the value of the interlayer transfer integral approx 1 meV forTbTe3 and GdTe3.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[219.0, 4, 'T', 3]

V
###Bilayer splitting versus Fermi-surface warping as an origin of slow oscillations of in-plane magnetoresistance in rare-earth tritellurides|Pavel D. Grigoriev,Alexander A. Sinchenko,Pascal Lejay,Abdellali Hadj-Azzem,Joel Balay,Olivier Leynaud,Vladimir N. Zverev,Pierre Monceau###
(1109755, 1109755)
 The SlO frequencygives the value of the interlayer transfer integral approx 1 meV forTbTe3 and GdTe3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[245.0, 4, 'T', 3]

TbTe3
###Bilayer splitting versus Fermi-surface warping as an origin of slow oscillations of in-plane magnetoresistance in rare-earth tritellurides|Pavel D. Grigoriev,Alexander A. Sinchenko,Pascal Lejay,Abdellali Hadj-Azzem,Joel Balay,Olivier Leynaud,Vladimir N. Zverev,Pierre Monceau###
(1109760, 1109762)
 The SlO frequencygives the value of the interlayer transfer integral approx 1 meV forTbTe3 and GdTe3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[250.0, 4, 'T', 3]

GdTe3
###Bilayer splitting versus Fermi-surface warping as an origin of slow oscillations of in-plane magnetoresistance in rare-earth tritellurides|Pavel D. Grigoriev,Alexander A. Sinchenko,Pascal Lejay,Abdellali Hadj-Azzem,Joel Balay,Olivier Leynaud,Vladimir N. Zverev,Pierre Monceau###
(1109766, 1109768)
 The SlO frequencygives the value of the interlayer transfer integral approx 1 meV forTbTe3 and GdTe3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[256.0, 4, 'T', 3]

NbP
###Mobility induced unsaturated high linear magnetoresistance in transition-metal monopnictides Weyl semimetals|Chandra Shekhar,Vicky Süss,Marcus Schmidt###
(1109917, 1109918)
 NbP, TaP, NbAs and TaAs exhibitextremely high mobility and unsaturated high magnetoresistance (MR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 8.5, 'x', 1],[52.0, 5, '%', 1],[56.0, 1.85, 'K', 1],[64.0, 1.5, 'x', 1],[66.0, 5, '%', 1],[70.0, 3, 'K', 1],[73.0, 9, 'T', 1],[111.0, 2, 'K', 2],[133.0, 5, 'x', 2]

TaP
###Mobility induced unsaturated high linear magnetoresistance in transition-metal monopnictides Weyl semimetals|Chandra Shekhar,Vicky Süss,Marcus Schmidt###
(1109921, 1109922)
 NbP, TaP, NbAs and TaAs exhibitextremely high mobility and unsaturated high magnetoresistance (MR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 8.5, 'x', 1],[48.0, 5, '%', 1],[52.0, 1.85, 'K', 1],[60.0, 1.5, 'x', 1],[62.0, 5, '%', 1],[66.0, 3, 'K', 1],[69.0, 9, 'T', 1],[107.0, 2, 'K', 2],[129.0, 5, 'x', 2]

NbAs
###Mobility induced unsaturated high linear magnetoresistance in transition-metal monopnictides Weyl semimetals|Chandra Shekhar,Vicky Süss,Marcus Schmidt###
(1109925, 1109926)
 NbP, TaP, NbAs and TaAs exhibitextremely high mobility and unsaturated high magnetoresistance (MR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 8.5, 'x', 1],[44.0, 5, '%', 1],[48.0, 1.85, 'K', 1],[56.0, 1.5, 'x', 1],[58.0, 5, '%', 1],[62.0, 3, 'K', 1],[65.0, 9, 'T', 1],[103.0, 2, 'K', 2],[125.0, 5, 'x', 2]

TaAs
###Mobility induced unsaturated high linear magnetoresistance in transition-metal monopnictides Weyl semimetals|Chandra Shekhar,Vicky Süss,Marcus Schmidt###
(1109930, 1109931)
 NbP, TaP, NbAs and TaAs exhibitextremely high mobility and unsaturated high magnetoresistance (MR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 8.5, 'x', 1],[39.0, 5, '%', 1],[43.0, 1.85, 'K', 1],[51.0, 1.5, 'x', 1],[53.0, 5, '%', 1],[57.0, 3, 'K', 1],[60.0, 9, 'T', 1],[98.0, 2, 'K', 2],[120.0, 5, 'x', 2]

NbP
###Mobility induced unsaturated high linear magnetoresistance in transition-metal monopnictides Weyl semimetals|Chandra Shekhar,Vicky Süss,Marcus Schmidt###
(1109978, 1109979)
 Forexample, MR values are 8.5x105% at 1.85 K for NbP and 1.5x105% at 3 K in 9 Tfor TaAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 8.5, 'x', 0],[8.0, 5, '%', 0],[4.0, 1.85, 'K', 0],[3.0, 1.5, 'x', 0],[5.0, 5, '%', 0],[9.0, 3, 'K', 0],[12.0, 9, 'T', 0],[50.0, 2, 'K', 1],[72.0, 5, 'x', 1]

TaAs
###Mobility induced unsaturated high linear magnetoresistance in transition-metal monopnictides Weyl semimetals|Chandra Shekhar,Vicky Süss,Marcus Schmidt###
(1109996, 1109997)
 Forexample, MR values are 8.5x105% at 1.85 K for NbP and 1.5x105% at 3 K in 9 Tfor TaAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 8.5, 'x', 0],[26.0, 5, '%', 0],[22.0, 1.85, 'K', 0],[14.0, 1.5, 'x', 0],[12.0, 5, '%', 0],[8.0, 3, 'K', 0],[5.0, 9, 'T', 0],[32.0, 2, 'K', 1],[54.0, 5, 'x', 1]

NbP
###Mobility induced unsaturated high linear magnetoresistance in transition-metal monopnictides Weyl semimetals|Chandra Shekhar,Vicky Süss,Marcus Schmidt###
(1110000, 1110001)
 NbP also achieves very low value of residual resistivity 0.63micro-ohm cm at 2 K due to suppression of scattering resulting in ultra-highmobility 5x106 cm2/Vs, Interestingly, we find that the mobility of thesecompounds play an important role for such a large MR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 8.5, 'x', 1],[30.0, 5, '%', 1],[26.0, 1.85, 'K', 1],[18.0, 1.5, 'x', 1],[16.0, 5, '%', 1],[12.0, 3, 'K', 1],[9.0, 9, 'T', 1],[28.0, 2, 'K', 0],[50.0, 5, 'x', 0]

Na3Bi
###Z_2 and Chiral Anomalies in Topological Dirac Semimetals|Anton A. Burkov,Yong Baek Kim###
(1110424, 1110426)
 We alsoprovide a possible explanation for the magnetic field dependent angularnarrowing of the negative longitudinal magnetoresistance, observed in a recentexperiment on Na3Bi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Important role of magnetization precession angle measurement in inverse spin Hall effect induced by spin pumping|Surbhi Gupta,Rohit Medwal,Daichi Kodama,Kouta Kondou,YoshiChika Otani,Yasuhiro Fukuma###
(1110485, 1110485)
 Here, we investigate spin Hall angle of Pt in Ni80Fe20/Pt bilayer system byusing a broadband spin pumping and inverse spin Hall effect measurement.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni80Fe20/Pt
###Important role of magnetization precession angle measurement in inverse spin Hall effect induced by spin pumping|Surbhi Gupta,Rohit Medwal,Daichi Kodama,Kouta Kondou,YoshiChika Otani,Yasuhiro Fukuma###
(1110489, 1110494)
 Here, we investigate spin Hall angle of Pt in Ni80Fe20/Pt bilayer system byusing a broadband spin pumping and inverse spin Hall effect measurement.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Ni80Fe20/Pt
###Important role of magnetization precession angle measurement in inverse spin Hall effect induced by spin pumping|Surbhi Gupta,Rohit Medwal,Daichi Kodama,Kouta Kondou,YoshiChika Otani,Yasuhiro Fukuma###
(1110725, 1110730)
 Amarked difference in the precession angle profiles for the different methods isobserved, resulting in the large variation in estimated values of spin currentdensity at Ni80Fe20/Pt interface.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Sb2Te2Se
###Quantum oscillations in metallic Sb2Te2Se topological insulator|K. Shrestha,V. Marinova,D. Graf,B. Lorenz,C. W. Chu###
(1110828, 1110832)
Quantum oscillations in metallic Sb2Te2Se topological insulator.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 0.5, ',', 4],[274.0, 3, 'times', 6]

Sb2Te2Se
###Quantum oscillations in metallic Sb2Te2Se topological insulator|K. Shrestha,V. Marinova,D. Graf,B. Lorenz,C. W. Chu###
(1110863, 1110867)
 We have studied the magnetotransport properties of the metallic, p<missing VAR>-typeSb2Te2Se which is a topological insulator.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 0.5, ',', 3],[239.0, 3, 'times', 5]

B15
###Quantum oscillations in metallic Sb2Te2Se topological insulator|K. Shrestha,V. Marinova,D. Graf,B. Lorenz,C. W. Chu###
(1110899, 1110900)
 Magnetoresistance shows Shubnikov deHaas oscillations in fields above B15 T<missing VAR>.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 0.5, ',', 2],[206.0, 3, 'times', 4]

B
###Quantum oscillations in metallic Sb2Te2Se topological insulator|K. Shrestha,V. Marinova,D. Graf,B. Lorenz,C. W. Chu###
(1110936, 1110936)
 The maxima/minima positions ofoscillations measured at different tilt angles with respect to the B directionalign with the normal component of field Bcosine, implying the existence of a2D<missing VAR> Fermi surface in Sb2Te2Se.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 0.5, ',', 1],[170.0, 3, 'times', 3]

Sb2Te2Se
###Quantum oscillations in metallic Sb2Te2Se topological insulator|K. Shrestha,V. Marinova,D. Graf,B. Lorenz,C. W. Chu###
(1110978, 1110982)
 The maxima/minima positions ofoscillations measured at different tilt angles with respect to the B directionalign with the normal component of field Bcosine, implying the existence of a2D<missing VAR> Fermi surface in Sb2Te2Se.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 0.5, ',', 1],[124.0, 3, 'times', 3]

F
###Quantum oscillations in metallic Sb2Te2Se topological insulator|K. Shrestha,V. Marinova,D. Graf,B. Lorenz,C. W. Chu###
(1111076, 1111076)
 From Lifshitz-Kosevichanalyses, the position of the Fermi level is found to be E<missing VAR>F 250 meV, above theDirac point.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 0.5, ',', 1],[30.0, 3, 'times', 1]

V
###Quantum oscillations in metallic Sb2Te2Se topological insulator|K. Shrestha,V. Marinova,D. Graf,B. Lorenz,C. W. Chu###
(1111081, 1111081)
 From Lifshitz-Kosevichanalyses, the position of the Fermi level is found to be E<missing VAR>F 250 meV, above theDirac point.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 0.5, ',', 1],[25.0, 3, 'times', 1]

F
###Quantum oscillations in metallic Sb2Te2Se topological insulator|K. Shrestha,V. Marinova,D. Graf,B. Lorenz,C. W. Chu###
(1111101, 1111101)
 This value of E<missing VAR>F is almost 3 times as large as that in ourprevious study on the Bi2Se21Te09 topological insulator; however, it stilltouches the tip of the bulk valence band.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 0.5, ',', 2],[5.0, 3, 'times', 0]

Bi2Se21Te09
###Quantum oscillations in metallic Sb2Te2Se topological insulator|K. Shrestha,V. Marinova,D. Graf,B. Lorenz,C. W. Chu###
(1111129, 1111136)
 This value of E<missing VAR>F is almost 3 times as large as that in ourprevious study on the Bi2Se21Te09 topological insulator; however, it stilltouches the tip of the bulk valence band.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.65625,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.28125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.0625,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 0.5, ',', 2],[23.0, 3, 'times', 0]

Sb2Te2Se
###Quantum oscillations in metallic Sb2Te2Se topological insulator|K. Shrestha,V. Marinova,D. Graf,B. Lorenz,C. W. Chu###
(1111195, 1111199)
 This explains the metallic behaviorand hole-like bulk charge carriers in the Sb2Te2Se compound.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 0.5, ',', 3],[89.0, 3, 'times', 1]

NiFe2O4
###Nonlocal magnon spin transport in NiFe$_2$O$_4$ thin films|J. Shan,P. Bougiatioti,L. Liang,G. Reiss,T. Kuschel,B. J. van Wees###
(1111222, 1111226)
Nonlocal magnon spin transport in NiFe2O4 thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiFe2O4
###Nonlocal magnon spin transport in NiFe$_2$O$_4$ thin films|J. Shan,P. Bougiatioti,L. Liang,G. Reiss,T. Kuschel,B. J. van Wees###
(1111250, 1111254)
 We report magnon spin transport in nickel ferrite (NiFe2O4, NFO)/platinum (Pt) bilayer systems at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Nonlocal magnon spin transport in NiFe$_2$O$_4$ thin films|J. Shan,P. Bougiatioti,L. Liang,G. Reiss,T. Kuschel,B. J. van Wees###
(1111259, 1111259)
 We report magnon spin transport in nickel ferrite (NiFe2O4, NFO)/platinum (Pt) bilayer systems at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(Pt)
###Nonlocal magnon spin transport in NiFe$_2$O$_4$ thin films|J. Shan,P. Bougiatioti,L. Liang,G. Reiss,T. Kuschel,B. J. van Wees###
(1111266, 1111268)
 We report magnon spin transport in nickel ferrite (NiFe2O4, NFO)/platinum (Pt) bilayer systems at room temperature.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Nonlocal magnon spin transport in NiFe$_2$O$_4$ thin films|J. Shan,P. Bougiatioti,L. Liang,G. Reiss,T. Kuschel,B. J. van Wees###
(1111336, 1111336)
 A nonlocal geometry isemployed, where the magnons are excited by the spin Hall effect or by the Jouleheating induced spin Seebeck effect at the Pt injector, and detected at acertain distance away by the inverse spin Hall effect at the Pt detector.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Nonlocal magnon spin transport in NiFe$_2$O$_4$ thin films|J. Shan,P. Bougiatioti,L. Liang,G. Reiss,T. Kuschel,B. J. van Wees###
(1111372, 1111372)
 A nonlocal geometry isemployed, where the magnons are excited by the spin Hall effect or by the Jouleheating induced spin Seebeck effect at the Pt injector, and detected at acertain distance away by the inverse spin Hall effect at the Pt detector.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NFO
###Nonlocal magnon spin transport in NiFe$_2$O$_4$ thin films|J. Shan,P. Bougiatioti,L. Liang,G. Reiss,T. Kuschel,B. J. van Wees###
(1111419, 1111421)
 Thedependence of the nonlocal magnon spin signals as a function of the magneticfield is closely related to the NFO magnetization behavior.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Nonlocal magnon spin transport in NiFe$_2$O$_4$ thin films|J. Shan,P. Bougiatioti,L. Liang,G. Reiss,T. Kuschel,B. J. van Wees###
(1111428, 1111428)
 In contrast, weobserve that the magnetoresistance measured locally at the Pt injector does notshow a clear relation with the average NFO magnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Nonlocal magnon spin transport in NiFe$_2$O$_4$ thin films|J. Shan,P. Bougiatioti,L. Liang,G. Reiss,T. Kuschel,B. J. van Wees###
(1111452, 1111452)
 In contrast, weobserve that the magnetoresistance measured locally at the Pt injector does notshow a clear relation with the average NFO magnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NFO
###Nonlocal magnon spin transport in NiFe$_2$O$_4$ thin films|J. Shan,P. Bougiatioti,L. Liang,G. Reiss,T. Kuschel,B. J. van Wees###
(1111475, 1111477)
 In contrast, weobserve that the magnetoresistance measured locally at the Pt injector does notshow a clear relation with the average NFO magnetization.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NFO
###Nonlocal magnon spin transport in NiFe$_2$O$_4$ thin films|J. Shan,P. Bougiatioti,L. Liang,G. Reiss,T. Kuschel,B. J. van Wees###
(1111517, 1111519)
 We estimate themagnon spin relaxation length to be 3.1 pm 0.2 mum<missing VAR> in the investigatedNFO samples.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Saturation of resistivity and Kohler's rule in Ni-doped La$_{1.85}$Sr$_{0.15}$CuO$_{4}$ cuprate|A. Malinowski,V. L. Bezusyy,P. Nowicki###
(1111547, 1111547)
Saturation of resistivity and Kohlers<missing VAR> rule in Ni-doped La1.85Sr0.15CuO4 cuprate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 9, 'T', 1]

La1.85Sr0.15CuO4
###Saturation of resistivity and Kohler's rule in Ni-doped La$_{1.85}$Sr$_{0.15}$CuO$_{4}$ cuprate|A. Malinowski,V. L. Bezusyy,P. Nowicki###
(1111551, 1111557)
Saturation of resistivity and Kohlers<missing VAR> rule in Ni-doped La1.85Sr0.15CuO4 cuprate.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0.02142857142857143,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2642857142857143,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 9, 'T', 1]

La1.85Sr0.15Cu1-yNi
###Saturation of resistivity and Kohler's rule in Ni-doped La$_{1.85}$Sr$_{0.15}$CuO$_{4}$ cuprate|A. Malinowski,V. L. Bezusyy,P. Nowicki###
(1111581, 1111589)
 We present the results of electrical transport measurements ofLa1.85Sr0.15Cu1-yNiy<missing VAR>O4 thin single-crystal films atmagnetic fields up to 9 T.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[23.0, 9, 'T', 0]

O4
###Saturation of resistivity and Kohler's rule in Ni-doped La$_{1.85}$Sr$_{0.15}$CuO$_{4}$ cuprate|A. Malinowski,V. L. Bezusyy,P. Nowicki###
(1111591, 1111592)
 We present the results of electrical transport measurements ofLa1.85Sr0.15Cu1-yNiy<missing VAR>O4 thin single-crystal films atmagnetic fields up to 9 T.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 9, 'T', 0]

Ni
###Saturation of resistivity and Kohler's rule in Ni-doped La$_{1.85}$Sr$_{0.15}$CuO$_{4}$ cuprate|A. Malinowski,V. L. Bezusyy,P. Nowicki###
(1111617, 1111617)
 Adding Ni impurity with strong Coulomb scatteringpotential to slightly underdoped cuprate makes the signs of resistivitysaturation at rhosat visible in the measurement temperature window up to350 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 9, 'T', 1]

K
###Saturation of resistivity and Kohler's rule in Ni-doped La$_{1.85}$Sr$_{0.15}$CuO$_{4}$ cuprate|A. Malinowski,V. L. Bezusyy,P. Nowicki###
(1111677, 1111677)
 Adding Ni impurity with strong Coulomb scatteringpotential to slightly underdoped cuprate makes the signs of resistivitysaturation at rhosat visible in the measurement temperature window up to350 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 9, 'T', 1]

Ni
###Saturation of resistivity and Kohler's rule in Ni-doped La$_{1.85}$Sr$_{0.15}$CuO$_{4}$ cuprate|A. Malinowski,V. L. Bezusyy,P. Nowicki###
(1111748, 1111748)
 Thermopower measurementsshow that Ni tends to localize mobile carriers, decreasing their effectiveconcentration as n<missing VAR>!
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 9, 'T', 3]

F
###Understanding stability diagram of perpendicular magnetic tunnel junctions|Witold Skowroński,Maiej Czapkiewicz,Sławomir Ziętek,Jakub Chęciński,Marek Frankowski,Piotr Rzeszut,Jerzy Wrona###
(1112207, 1112207)
 Perpendicular magnetic tunnel junctions (MTJ) with a bottom pinned referencelayer and a composite free layer (FL) are investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 1.5, 'nm', 2],[111.0, 20, 'K', 2],[182.0, 130, 'nm', 4]

F
###Understanding stability diagram of perpendicular magnetic tunnel junctions|Witold Skowroński,Maiej Czapkiewicz,Sławomir Ziętek,Jakub Chęciński,Marek Frankowski,Piotr Rzeszut,Jerzy Wrona###
(1112225, 1112225)
 Different thicknessesof the FL<missing VAR> were tested to obtain an optimal balance between tunnelingmagnetoresistance (TMR) ratio and perpendicular magnetic anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 1.5, 'nm', 1],[93.0, 20, 'K', 1],[164.0, 130, 'nm', 3]

C
###Understanding stability diagram of perpendicular magnetic tunnel junctions|Witold Skowroński,Maiej Czapkiewicz,Sławomir Ziętek,Jakub Chęciński,Marek Frankowski,Piotr Rzeszut,Jerzy Wrona###
(1112276, 1112276)
 Afterannealing at 400 circC, the TMR ratio for 1.5 nm thick CoFeB sublayerreached 180 % at room temperature and 280 % at 20 K with an MgO tunnel barrierthickness corresponding to the resistance area product R<missing VAR>A  10Ohmmathrmmum<missing VAR>2.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 1.5, 'nm', 0],[42.0, 20, 'K', 0],[113.0, 130, 'nm', 2]

CoFeB
###Understanding stability diagram of perpendicular magnetic tunnel junctions|Witold Skowroński,Maiej Czapkiewicz,Sławomir Ziętek,Jakub Chęciński,Marek Frankowski,Piotr Rzeszut,Jerzy Wrona###
(1112292, 1112294)
 Afterannealing at 400 circC, the TMR ratio for 1.5 nm thick CoFeB sublayerreached 180 % at room temperature and 280 % at 20 K with an MgO tunnel barrierthickness corresponding to the resistance area product R<missing VAR>A  10Ohmmathrmmum<missing VAR>2.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 1.5, 'nm', 0],[24.0, 20, 'K', 0],[95.0, 130, 'nm', 2]

MgO
###Understanding stability diagram of perpendicular magnetic tunnel junctions|Witold Skowroński,Maiej Czapkiewicz,Sławomir Ziętek,Jakub Chęciński,Marek Frankowski,Piotr Rzeszut,Jerzy Wrona###
(1112324, 1112325)
 Afterannealing at 400 circC, the TMR ratio for 1.5 nm thick CoFeB sublayerreached 180 % at room temperature and 280 % at 20 K with an MgO tunnel barrierthickness corresponding to the resistance area product R<missing VAR>A  10Ohmmathrmmum<missing VAR>2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 1.5, 'nm', 0],[6.0, 20, 'K', 0],[64.0, 130, 'nm', 2]

S
###Understanding stability diagram of perpendicular magnetic tunnel junctions|Witold Skowroński,Maiej Czapkiewicz,Sławomir Ziętek,Jakub Chęciński,Marek Frankowski,Piotr Rzeszut,Jerzy Wrona###
(1112409, 1112409)
 magnetic field stability diagramsmeasured in pillar-shaped MTJs with 130 nm diameter indicate the competitionbetween spin transfer torque (STT), voltage controlled magnetic anisotropy(VCM<missing VAR>A) and temperature effects in the switching process.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 1.5, 'nm', 2],[91.0, 20, 'K', 2],[20.0, 130, 'nm', 0]

VC
###Understanding stability diagram of perpendicular magnetic tunnel junctions|Witold Skowroński,Maiej Czapkiewicz,Sławomir Ziętek,Jakub Chęciński,Marek Frankowski,Piotr Rzeszut,Jerzy Wrona###
(1112425, 1112426)
 magnetic field stability diagramsmeasured in pillar-shaped MTJs with 130 nm diameter indicate the competitionbetween spin transfer torque (STT), voltage controlled magnetic anisotropy(VCM<missing VAR>A) and temperature effects in the switching process.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 1.5, 'nm', 2],[107.0, 20, 'K', 2],[36.0, 130, 'nm', 0]

S
###Understanding stability diagram of perpendicular magnetic tunnel junctions|Witold Skowroński,Maiej Czapkiewicz,Sławomir Ziętek,Jakub Chęciński,Marek Frankowski,Piotr Rzeszut,Jerzy Wrona###
(1112507, 1112507)
 An extended stabilityphase diagram model that takes into account all three parameters and theeffective damping measured independently using broadband ferromagneticresonance technique enabled the determination of both STT and VCM<missing VAR>A coefficientsthat are responsible for the FL<missing VAR> magnetization switching.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[219.0, 1.5, 'nm', 3],[189.0, 20, 'K', 3],[118.0, 130, 'nm', 1]

VC
###Understanding stability diagram of perpendicular magnetic tunnel junctions|Witold Skowroński,Maiej Czapkiewicz,Sławomir Ziętek,Jakub Chęciński,Marek Frankowski,Piotr Rzeszut,Jerzy Wrona###
(1112513, 1112514)
 An extended stabilityphase diagram model that takes into account all three parameters and theeffective damping measured independently using broadband ferromagneticresonance technique enabled the determination of both STT and VCM<missing VAR>A coefficientsthat are responsible for the FL<missing VAR> magnetization switching.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[225.0, 1.5, 'nm', 3],[195.0, 20, 'K', 3],[124.0, 130, 'nm', 1]

F
###Understanding stability diagram of perpendicular magnetic tunnel junctions|Witold Skowroński,Maiej Czapkiewicz,Sławomir Ziętek,Jakub Chęciński,Marek Frankowski,Piotr Rzeszut,Jerzy Wrona###
(1112531, 1112531)
 An extended stabilityphase diagram model that takes into account all three parameters and theeffective damping measured independently using broadband ferromagneticresonance technique enabled the determination of both STT and VCM<missing VAR>A coefficientsthat are responsible for the FL<missing VAR> magnetization switching.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[243.0, 1.5, 'nm', 3],[213.0, 20, 'K', 3],[142.0, 130, 'nm', 1]

I
###Novel Majorana mode and magnetoresistance in ferromagnetic superconducting topological insulator|Hadi Goudarzi,Maryam Khezerlou,Samin Asgarifar###
(1112691, 1112691)
 We find that, Majoranamode energy, as a verified feature of T<missing VAR>I F/S structure, along the interfacesensitively depends on the magnitude of magnetization m<missing VAR>zfs in FS region,while its slope in perpendicular incidence presents steep and no change.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F/S
###Novel Majorana mode and magnetoresistance in ferromagnetic superconducting topological insulator|Hadi Goudarzi,Maryam Khezerlou,Samin Asgarifar###
(1112693, 1112695)
 We find that, Majoranamode energy, as a verified feature of T<missing VAR>I F/S structure, along the interfacesensitively depends on the magnitude of magnetization m<missing VAR>zfs in FS region,while its slope in perpendicular incidence presents steep and no change.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

FS
###Novel Majorana mode and magnetoresistance in ferromagnetic superconducting topological insulator|Hadi Goudarzi,Maryam Khezerlou,Samin Asgarifar###
(1112726, 1112727)
 We find that, Majoranamode energy, as a verified feature of T<missing VAR>I F/S structure, along the interfacesensitively depends on the magnitude of magnetization m<missing VAR>zfs in FS region,while its slope in perpendicular incidence presents steep and no change.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FS
###Novel Majorana mode and magnetoresistance in ferromagnetic superconducting topological insulator|Hadi Goudarzi,Maryam Khezerlou,Samin Asgarifar###
(1112836, 1112837)
 Sincethe superconducting gap is renormalized by a factor eta(m<missing VAR>zfs), henceAndreev reflection is more or less suppressed, and, in particular, resultingsubgap tunneling conductance is more sensitive to the magnitude ofmagnetizations in FS and F regions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Novel Majorana mode and magnetoresistance in ferromagnetic superconducting topological insulator|Hadi Goudarzi,Maryam Khezerlou,Samin Asgarifar###
(1112841, 1112841)
 Sincethe superconducting gap is renormalized by a factor eta(m<missing VAR>zfs), henceAndreev reflection is more or less suppressed, and, in particular, resultingsubgap tunneling conductance is more sensitive to the magnitude ofmagnetizations in FS and F regions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N/F/FS
###Novel Majorana mode and magnetoresistance in ferromagnetic superconducting topological insulator|Hadi Goudarzi,Maryam Khezerlou,Samin Asgarifar###
(1112887, 1112892)
 Furthermore, an interesting scenariohappens at the antiparallel configuration of magnetizations m<missing VAR>zf andm<missing VAR>zfs resulting in magnetoresistance in N/F/FS junction, which can becontrolled and decreased by tuning the magnetization magnitude in FS region.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

FS
###Novel Majorana mode and magnetoresistance in ferromagnetic superconducting topological insulator|Hadi Goudarzi,Maryam Khezerlou,Samin Asgarifar###
(1112922, 1112923)
 Furthermore, an interesting scenariohappens at the antiparallel configuration of magnetizations m<missing VAR>zf andm<missing VAR>zfs resulting in magnetoresistance in N/F/FS junction, which can becontrolled and decreased by tuning the magnetization magnitude in FS region.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BN
###Negative differential resistance and magnetoresistance in zigzag borophene nanoribbons|Jiayi Liu,Changpeng Chen,Lu Han,Ziqing Zhu,Jinping Wu###
(1112980, 1112981)
 We investigate the transport properties of pristine zigzag-edged borophenenanoribbons (Z<missing VAR>BNRs) of different widths, using the fist-principlescalculations.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 5, 'and', 1],[38.0, 6, 'as', 1],[189.0, 36, '%', 4],[257.0, 70, '%', 5]

BN
###Negative differential resistance and magnetoresistance in zigzag borophene nanoribbons|Jiayi Liu,Changpeng Chen,Lu Han,Ziqing Zhu,Jinping Wu###
(1113009, 1113010)
 We choose Z<missing VAR>BNRs with widths of 5 and 6 as odd and even widths.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 5, 'and', 0],[9.0, 6, 'as', 0],[160.0, 36, '%', 3],[228.0, 70, '%', 4]

N
###Negative differential resistance and magnetoresistance in zigzag borophene nanoribbons|Jiayi Liu,Changpeng Chen,Lu Han,Ziqing Zhu,Jinping Wu###
(1113054, 1113054)
The differences of the quantum transport properties are found, where even-NBNRs and odd-N BNRs have different current-voltage relationships.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 5, 'and', 1],[35.0, 6, 'as', 1],[116.0, 36, '%', 2],[184.0, 70, '%', 3]

BN
###Negative differential resistance and magnetoresistance in zigzag borophene nanoribbons|Jiayi Liu,Changpeng Chen,Lu Han,Ziqing Zhu,Jinping Wu###
(1113057, 1113058)
The differences of the quantum transport properties are found, where even-NBNRs and odd-N BNRs have different current-voltage relationships.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 5, 'and', 1],[38.0, 6, 'as', 1],[112.0, 36, '%', 2],[180.0, 70, '%', 3]

N
###Negative differential resistance and magnetoresistance in zigzag borophene nanoribbons|Jiayi Liu,Changpeng Chen,Lu Han,Ziqing Zhu,Jinping Wu###
(1113065, 1113065)
The differences of the quantum transport properties are found, where even-NBNRs and odd-N BNRs have different current-voltage relationships.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 5, 'and', 1],[46.0, 6, 'as', 1],[105.0, 36, '%', 2],[173.0, 70, '%', 3]

BN
###Negative differential resistance and magnetoresistance in zigzag borophene nanoribbons|Jiayi Liu,Changpeng Chen,Lu Han,Ziqing Zhu,Jinping Wu###
(1113067, 1113068)
The differences of the quantum transport properties are found, where even-NBNRs and odd-N BNRs have different current-voltage relationships.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 5, 'and', 1],[48.0, 6, 'as', 1],[102.0, 36, '%', 2],[170.0, 70, '%', 3]

N
###Negative differential resistance and magnetoresistance in zigzag borophene nanoribbons|Jiayi Liu,Changpeng Chen,Lu Han,Ziqing Zhu,Jinping Wu###
(1113095, 1113095)
 Moreover, thenegative differential resistance (NDR) can be observed within certain biasrange in 5-Z<missing VAR>BNR<missing VAR>, while 6-Z<missing VAR>BNR<missing VAR> behaves as metal whose current rises with theincrease of the voltage.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 5, 'and', 2],[76.0, 6, 'as', 2],[75.0, 36, '%', 1],[143.0, 70, '%', 2]

BN
###Negative differential resistance and magnetoresistance in zigzag borophene nanoribbons|Jiayi Liu,Changpeng Chen,Lu Han,Ziqing Zhu,Jinping Wu###
(1113120, 1113121)
 Moreover, thenegative differential resistance (NDR) can be observed within certain biasrange in 5-Z<missing VAR>BNR<missing VAR>, while 6-Z<missing VAR>BNR<missing VAR> behaves as metal whose current rises with theincrease of the voltage.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 5, 'and', 2],[101.0, 6, 'as', 2],[49.0, 36, '%', 1],[117.0, 70, '%', 2]

BN
###Negative differential resistance and magnetoresistance in zigzag borophene nanoribbons|Jiayi Liu,Changpeng Chen,Lu Han,Ziqing Zhu,Jinping Wu###
(1113130, 1113131)
 Moreover, thenegative differential resistance (NDR) can be observed within certain biasrange in 5-Z<missing VAR>BNR<missing VAR>, while 6-Z<missing VAR>BNR<missing VAR> behaves as metal whose current rises with theincrease of the voltage.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 5, 'and', 2],[111.0, 6, 'as', 2],[39.0, 36, '%', 1],[107.0, 70, '%', 2]

N
###Negative differential resistance and magnetoresistance in zigzag borophene nanoribbons|Jiayi Liu,Changpeng Chen,Lu Han,Ziqing Zhu,Jinping Wu###
(1113217, 1113217)
 Furthermore, themagnetoresistance effect appears to be in even-N Z<missing VAR>BNRs, and the maximum valuecan reach 70%.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[199.0, 5, 'and', 4],[198.0, 6, 'as', 4],[47.0, 36, '%', 1],[21.0, 70, '%', 0]

BN
###Negative differential resistance and magnetoresistance in zigzag borophene nanoribbons|Jiayi Liu,Changpeng Chen,Lu Han,Ziqing Zhu,Jinping Wu###
(1113220, 1113221)
 Furthermore, themagnetoresistance effect appears to be in even-N Z<missing VAR>BNRs, and the maximum valuecan reach 70%.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[202.0, 5, 'and', 4],[201.0, 6, 'as', 4],[50.0, 36, '%', 1],[17.0, 70, '%', 0]

In
###Impact of the skyrmion spin texture on magnetoresistance|André Kubetzka,Christian Hanneken,Roland Wiesendanger,Kirsten von Bergmann###
(1113303, 1113303)
 In the focus is the previouslyfound non-collinear magnetoresistance, which originates from spin mixingeffects upon electron hopping between adjacent sites with canted magneticmoments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Impact of the skyrmion spin texture on magnetoresistance|André Kubetzka,Christian Hanneken,Roland Wiesendanger,Kirsten von Bergmann###
(1113360, 1113360)
 In the present work it is studied with lateral resolution both for thezero magnetic field spin spiral state as well as for individual magneticskyrmions at different magnetic field values.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuO
###Magnetic Field-Free Giant Magnetoresistance in a Proximity- and Gate-Induced Graphene Spin Valve|Yu Song###
(1113719, 1113720)
 Taking advantageof these features, we propose an electrically engineered spin valve bycombining two magnetic insulators (using EuO, EuS, or YIG) and three coatinggates.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 5, '%', 2],[154.0, 68, 'K', 2],[157.0, 100, 'K', 2]

EuS
###Magnetic Field-Free Giant Magnetoresistance in a Proximity- and Gate-Induced Graphene Spin Valve|Yu Song###
(1113723, 1113724)
 Taking advantageof these features, we propose an electrically engineered spin valve bycombining two magnetic insulators (using EuO, EuS, or YIG) and three coatinggates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 5, '%', 2],[150.0, 68, 'K', 2],[153.0, 100, 'K', 2]

YI
###Magnetic Field-Free Giant Magnetoresistance in a Proximity- and Gate-Induced Graphene Spin Valve|Yu Song###
(1113729, 1113730)
 Taking advantageof these features, we propose an electrically engineered spin valve bycombining two magnetic insulators (using EuO, EuS, or YIG) and three coatinggates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 5, '%', 2],[144.0, 68, 'K', 2],[147.0, 100, 'K', 2]

EuO
###Magnetic Field-Free Giant Magnetoresistance in a Proximity- and Gate-Induced Graphene Spin Valve|Yu Song###
(1113889, 1113890)
 We demonstrate that, when the second top gate is tuned toutilize the insulating or spin insulating states, huge giant magnetoresistance(GMR) at high temperature (several times of 105% at 68K and 100K) can beachieved for EuO and YIG<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 5, '%', 0],[15.0, 68, 'K', 0],[12.0, 100, 'K', 0]

YI
###Magnetic Field-Free Giant Magnetoresistance in a Proximity- and Gate-Induced Graphene Spin Valve|Yu Song###
(1113894, 1113895)
 We demonstrate that, when the second top gate is tuned toutilize the insulating or spin insulating states, huge giant magnetoresistance(GMR) at high temperature (several times of 105% at 68K and 100K) can beachieved for EuO and YIG<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 5, '%', 0],[20.0, 68, 'K', 0],[17.0, 100, 'K', 0]

B
###Aharonov-Bohm effect in monolayer black phosphorus (phosphorene) nanorings|Rui Zhang,Zhenhua Wu,Xiaojing Li,Kai Chang###
(1114378, 1114378)
 This work presents theoretical demonstration of Aharonov-Bohm (AB) effect inmonolayer phosphorene nanorings (PNR).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PN
###Aharonov-Bohm effect in monolayer black phosphorus (phosphorene) nanorings|Rui Zhang,Zhenhua Wu,Xiaojing Li,Kai Chang###
(1114393, 1114394)
 This work presents theoretical demonstration of Aharonov-Bohm (AB) effect inmonolayer phosphorene nanorings (PNR).
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PN
###Aharonov-Bohm effect in monolayer black phosphorus (phosphorene) nanorings|Rui Zhang,Zhenhua Wu,Xiaojing Li,Kai Chang###
(1114410, 1114411)
 Atomistic quantum transport simulationsof PNR<missing VAR> are employed to investigate the impact of multiple modulation sources onthe sample conductance.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Aharonov-Bohm effect in monolayer black phosphorus (phosphorene) nanorings|Rui Zhang,Zhenhua Wu,Xiaojing Li,Kai Chang###
(1114444, 1114444)
 In presence of a perpendicular magnetic field, we findthat the conductance of both armchair and zigzag PNR<missing VAR> oscillate periodically ina low-energy window as a manifestation of the AB effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PN
###Aharonov-Bohm effect in monolayer black phosphorus (phosphorene) nanorings|Rui Zhang,Zhenhua Wu,Xiaojing Li,Kai Chang###
(1114480, 1114481)
 In presence of a perpendicular magnetic field, we findthat the conductance of both armchair and zigzag PNR<missing VAR> oscillate periodically ina low-energy window as a manifestation of the AB effect.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Aharonov-Bohm effect in monolayer black phosphorus (phosphorene) nanorings|Rui Zhang,Zhenhua Wu,Xiaojing Li,Kai Chang###
(1114510, 1114510)
 In presence of a perpendicular magnetic field, we findthat the conductance of both armchair and zigzag PNR<missing VAR> oscillate periodically ina low-energy window as a manifestation of the AB effect.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PN
###Aharonov-Bohm effect in monolayer black phosphorus (phosphorene) nanorings|Rui Zhang,Zhenhua Wu,Xiaojing Li,Kai Chang###
(1114541, 1114542)
 Our numerical resultshave revealed a giant magnetoresistance (MR) in zigzag PNR<missing VAR> (with a maximummagnitude approaching two thousand percent).
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Aharonov-Bohm effect in monolayer black phosphorus (phosphorene) nanorings|Rui Zhang,Zhenhua Wu,Xiaojing Li,Kai Chang###
(1114576, 1114576)
 It is attributed to the AB effectinduced destructive interference phase in a wide energy range below the bottomof the second subband.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PN
###Aharonov-Bohm effect in monolayer black phosphorus (phosphorene) nanorings|Rui Zhang,Zhenhua Wu,Xiaojing Li,Kai Chang###
(1114623, 1114624)
 We also demonstrate that PNR<missing VAR> conductance is highlyanisotropic, offering an additional way to modulate MR.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PN
###Aharonov-Bohm effect in monolayer black phosphorus (phosphorene) nanorings|Rui Zhang,Zhenhua Wu,Xiaojing Li,Kai Chang###
(1114662, 1114663)
 The giant MR in PNR<missing VAR> ismaintained at room temperature in the presence of thermal broadening effect.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LiTi2O4
###Raman study of electron-phonon coupling in thin films of LiTi$_2$O$_4$ spinel oxide superconductor|D. Chen,Y. -L. Jia,T. -T. Zhang,Z. Fang,K. Jin,P. Richard,H. Ding###
(1114720, 1114724)
Raman study of electron-phonon coupling in thin films of LiTi2O4 spinel oxide superconductor.
Featurization terminated normally.
0,0,0.14285714285714285,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 5, 'K', 3],[105.0, 295, 'K', 3],[164.0, 50, 'K', 4]

LiTi2O4
###Raman study of electron-phonon coupling in thin films of LiTi$_2$O$_4$ spinel oxide superconductor|D. Chen,Y. -L. Jia,T. -T. Zhang,Z. Fang,K. Jin,P. Richard,H. Ding###
(1114753, 1114757)
 We performed a Raman scattering study of thin films of LiTi2O4 spineloxide superconductor.
Featurization terminated normally.
0,0,0.14285714285714285,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 5, 'K', 2],[72.0, 295, 'K', 2],[131.0, 50, 'K', 3]

LiTi2O4
###Raman study of electron-phonon coupling in thin films of LiTi$_2$O$_4$ spinel oxide superconductor|D. Chen,Y. -L. Jia,T. -T. Zhang,Z. Fang,K. Jin,P. Richard,H. Ding###
(1114847, 1114851)
 ThreeT2g modes show a Fano lineshape from 5 K to 295 K, which suggests anelectron-phonon coupling in LiTi2O4.
Featurization terminated normally.
0,0,0.14285714285714285,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 5, 'K', 0],[18.0, 295, 'K', 0],[37.0, 50, 'K', 1]

RuCl3
###Pressure-induced melting of magnetic order and emergence of new quantum state in alpha-RuCl3|Zhe Wang,Jing Guo,F. F. Tafti,Anthony Hegg,Sudeshna Sen,Vladimir A Sidorov,Le Wang,Shu Cai,Wei Yi,Yazhou Zhou,Honghong Wang,Shan Zhang,Ke Yang,Aiguo Li,Xiaodong Li,Yanchun Li,Jing Liu,Youguo Shi,Wei Ku,Qi Wu,Robert J Cava,Liling Sun###
(1115011, 1115013)
Pressure-induced melting of magnetic order and emergence of new quantum state in alpha-RuCl3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 0.7, 'GPa', 2]

F
###Pressure-induced melting of magnetic order and emergence of new quantum state in alpha-RuCl3|Zhe Wang,Jing Guo,F. F. Tafti,Anthony Hegg,Sudeshna Sen,Vladimir A Sidorov,Le Wang,Shu Cai,Wei Yi,Yazhou Zhou,Honghong Wang,Shan Zhang,Ke Yang,Aiguo Li,Xiaodong Li,Yanchun Li,Jing Liu,Youguo Shi,Wei Ku,Qi Wu,Robert J Cava,Liling Sun###
(1115041, 1115041)
 Here we report the observation of pressure-induced melting ofantiferromagnetic (AFM) order and emergence of a new quantum state in thehoneycomb-lattice halide alpha-RuCl3, a candidate compound in the proximity ofquantum spin liquid state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 0.7, 'GPa', 1]

RuCl3
###Pressure-induced melting of magnetic order and emergence of new quantum state in alpha-RuCl3|Zhe Wang,Jing Guo,F. F. Tafti,Anthony Hegg,Sudeshna Sen,Vladimir A Sidorov,Le Wang,Shu Cai,Wei Yi,Yazhou Zhou,Honghong Wang,Shan Zhang,Ke Yang,Aiguo Li,Xiaodong Li,Yanchun Li,Jing Liu,Youguo Shi,Wei Ku,Qi Wu,Robert J Cava,Liling Sun###
(1115074, 1115076)
 Here we report the observation of pressure-induced melting ofantiferromagnetic (AFM) order and emergence of a new quantum state in thehoneycomb-lattice halide alpha-RuCl3, a candidate compound in the proximity ofquantum spin liquid state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 0.7, 'GPa', 1]

F
###Pressure-induced melting of magnetic order and emergence of new quantum state in alpha-RuCl3|Zhe Wang,Jing Guo,F. F. Tafti,Anthony Hegg,Sudeshna Sen,Vladimir A Sidorov,Le Wang,Shu Cai,Wei Yi,Yazhou Zhou,Honghong Wang,Shan Zhang,Ke Yang,Aiguo Li,Xiaodong Li,Yanchun Li,Jing Liu,Youguo Shi,Wei Ku,Qi Wu,Robert J Cava,Liling Sun###
(1115123, 1115123)
 Our high-pressure heat capacity measurementsdemonstrate that the AFM<missing VAR> order smoothly melts away at a critical pressure (Pc)of 0.7 GPa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 0.7, 'GPa', 0]

F
###Pressure-induced melting of magnetic order and emergence of new quantum state in alpha-RuCl3|Zhe Wang,Jing Guo,F. F. Tafti,Anthony Hegg,Sudeshna Sen,Vladimir A Sidorov,Le Wang,Shu Cai,Wei Yi,Yazhou Zhou,Honghong Wang,Shan Zhang,Ke Yang,Aiguo Li,Xiaodong Li,Yanchun Li,Jing Liu,Youguo Shi,Wei Ku,Qi Wu,Robert J Cava,Liling Sun###
(1115157, 1115157)
 Intriguingly, the AFM<missing VAR> transition temperature displays an increaseupon applying pressure below the Pc, in stark contrast to usual phase diagrams,for example in pressurized parent compounds of unconventional superconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 0.7, 'GPa', 1]

Pa
###Pressure-induced melting of magnetic order and emergence of new quantum state in alpha-RuCl3|Zhe Wang,Jing Guo,F. F. Tafti,Anthony Hegg,Sudeshna Sen,Vladimir A Sidorov,Le Wang,Shu Cai,Wei Yi,Yazhou Zhou,Honghong Wang,Shan Zhang,Ke Yang,Aiguo Li,Xiaodong Li,Yanchun Li,Jing Liu,Youguo Shi,Wei Ku,Qi Wu,Robert J Cava,Liling Sun###
(1115297, 1115297)
 These observations suggest that the high-pressure phase is in anexotic gapped quantum state which is robust against pressure up to 140 G<missing VAR>Pa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 0.7, 'GPa', 3]

In
###Charge transfer driven emergent phenomena in oxide heterostructures|Hanghui Chen,Andrew J. Millis###
(1115484, 1115484)
 In this report, wereview mechanisms and physical consequence of charge transfer across interfacesin oxide heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SiC
###Interaction between magnetic moments and itinerant carriers in d0 ferromagnetic SiC|Yu Liu,Ye Yuan,Fang Liu,Roman Boettger,Wolfgang Anwand,Yutian Wang,Anna Semisalova,Alexey N. Ponomaryov,Xia Lu,Alpha T. N'Diaye,Elke Arenholz,Viton Heera,Wolfgang Skorupa,Manfred Helm,Shengqiang Zhou###
(1115655, 1115656)
Interaction between magnetic moments and itinerant carriers in d<missing VAR>0 ferromagnetic SiC.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SiC
###Interaction between magnetic moments and itinerant carriers in d0 ferromagnetic SiC|Yu Liu,Ye Yuan,Fang Liu,Roman Boettger,Wolfgang Anwand,Yutian Wang,Anna Semisalova,Alexey N. Ponomaryov,Xia Lu,Alpha T. N'Diaye,Elke Arenholz,Viton Heera,Wolfgang Skorupa,Manfred Helm,Shengqiang Zhou###
(1115716, 1115717)
 Here, we investigate magneticand transport properties in d<missing VAR>0 ferromagnetic SiC single crystals prepared bypostimplantation pulsed laser annealing.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SiC
###Interaction between magnetic moments and itinerant carriers in d0 ferromagnetic SiC|Yu Liu,Ye Yuan,Fang Liu,Roman Boettger,Wolfgang Anwand,Yutian Wang,Anna Semisalova,Alexey N. Ponomaryov,Xia Lu,Alpha T. N'Diaye,Elke Arenholz,Viton Heera,Wolfgang Skorupa,Manfred Helm,Shengqiang Zhou###
(1115786, 1115787)
 Magnetic moments are contributed bythe p<missing VAR> states of carbon atoms, but their magnetic circular dichroism isdifferent from that in semi-insulating SiC samples.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Interaction between magnetic moments and itinerant carriers in d0 ferromagnetic SiC|Yu Liu,Ye Yuan,Fang Liu,Roman Boettger,Wolfgang Anwand,Yutian Wang,Anna Semisalova,Alexey N. Ponomaryov,Xia Lu,Alpha T. N'Diaye,Elke Arenholz,Viton Heera,Wolfgang Skorupa,Manfred Helm,Shengqiang Zhou###
(1115842, 1115842)
 The ferromagnetism is relatively weak in N-implanted SiC comparedwith that in Al-implanted SiC after annealing.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SiC
###Interaction between magnetic moments and itinerant carriers in d0 ferromagnetic SiC|Yu Liu,Ye Yuan,Fang Liu,Roman Boettger,Wolfgang Anwand,Yutian Wang,Anna Semisalova,Alexey N. Ponomaryov,Xia Lu,Alpha T. N'Diaye,Elke Arenholz,Viton Heera,Wolfgang Skorupa,Manfred Helm,Shengqiang Zhou###
(1115846, 1115847)
 The ferromagnetism is relatively weak in N-implanted SiC comparedwith that in Al-implanted SiC after annealing.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Al
###Interaction between magnetic moments and itinerant carriers in d0 ferromagnetic SiC|Yu Liu,Ye Yuan,Fang Liu,Roman Boettger,Wolfgang Anwand,Yutian Wang,Anna Semisalova,Alexey N. Ponomaryov,Xia Lu,Alpha T. N'Diaye,Elke Arenholz,Viton Heera,Wolfgang Skorupa,Manfred Helm,Shengqiang Zhou###
(1115858, 1115858)
 The ferromagnetism is relatively weak in N-implanted SiC comparedwith that in Al-implanted SiC after annealing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SiC
###Interaction between magnetic moments and itinerant carriers in d0 ferromagnetic SiC|Yu Liu,Ye Yuan,Fang Liu,Roman Boettger,Wolfgang Anwand,Yutian Wang,Anna Semisalova,Alexey N. Ponomaryov,Xia Lu,Alpha T. N'Diaye,Elke Arenholz,Viton Heera,Wolfgang Skorupa,Manfred Helm,Shengqiang Zhou###
(1115862, 1115863)
 The ferromagnetism is relatively weak in N-implanted SiC comparedwith that in Al-implanted SiC after annealing.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SiC
###Interaction between magnetic moments and itinerant carriers in d0 ferromagnetic SiC|Yu Liu,Ye Yuan,Fang Liu,Roman Boettger,Wolfgang Anwand,Yutian Wang,Anna Semisalova,Alexey N. Ponomaryov,Xia Lu,Alpha T. N'Diaye,Elke Arenholz,Viton Heera,Wolfgang Skorupa,Manfred Helm,Shengqiang Zhou###
(1115916, 1115917)
 The results suggest that d<missing VAR>0magnetic moments and itinerant carriers can interact with each other, whichwill facilitate the development of SiC spintronic devices with d<missing VAR>0ferromagnetism.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###High-temperature intrinsic ferromagnetism in the (In,Fe)Sb semiconductor|A. V. Kudrin,Yu. A. Danilov,V. P. Lesnikov,O. V. Vikhrova,D. A. Pavlov,Yu. V. Usov,I. N. Antonov,R. N. Krukov,N. A. Sobolev###
(1115953, 1115953)
High-temperature intrinsic ferromagnetism in the (In,Fe)Sb semiconductor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 13, 'at', 1],[135.0, 300, 'K', 4],[290.0, -16, ',', 6],[305.0, 1, ',', 7]

Fe
###High-temperature intrinsic ferromagnetism in the (In,Fe)Sb semiconductor|A. V. Kudrin,Yu. A. Danilov,V. P. Lesnikov,O. V. Vikhrova,D. A. Pavlov,Yu. V. Usov,I. N. Antonov,R. N. Krukov,N. A. Sobolev###
(1115955, 1115955)
High-temperature intrinsic ferromagnetism in the (In,Fe)Sb semiconductor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 13, 'at', 1],[133.0, 300, 'K', 4],[288.0, -16, ',', 6],[303.0, 1, ',', 7]

Sb
###High-temperature intrinsic ferromagnetism in the (In,Fe)Sb semiconductor|A. V. Kudrin,Yu. A. Danilov,V. P. Lesnikov,O. V. Vikhrova,D. A. Pavlov,Yu. V. Usov,I. N. Antonov,R. N. Krukov,N. A. Sobolev###
(1115957, 1115957)
High-temperature intrinsic ferromagnetism in the (In,Fe)Sb semiconductor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 13, 'at', 1],[131.0, 300, 'K', 4],[286.0, -16, ',', 6],[301.0, 1, ',', 7]

In
###High-temperature intrinsic ferromagnetism in the (In,Fe)Sb semiconductor|A. V. Kudrin,Yu. A. Danilov,V. P. Lesnikov,O. V. Vikhrova,D. A. Pavlov,Yu. V. Usov,I. N. Antonov,R. N. Krukov,N. A. Sobolev###
(1115965, 1115965)
 The (In,Fe)Sb layers with the Fe content up to 13 at.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 13, 'at', 0],[123.0, 300, 'K', 3],[278.0, -16, ',', 5],[293.0, 1, ',', 6]

Fe
###High-temperature intrinsic ferromagnetism in the (In,Fe)Sb semiconductor|A. V. Kudrin,Yu. A. Danilov,V. P. Lesnikov,O. V. Vikhrova,D. A. Pavlov,Yu. V. Usov,I. N. Antonov,R. N. Krukov,N. A. Sobolev###
(1115967, 1115967)
 The (In,Fe)Sb layers with the Fe content up to 13 at.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 13, 'at', 0],[121.0, 300, 'K', 3],[276.0, -16, ',', 5],[291.0, 1, ',', 6]

Sb
###High-temperature intrinsic ferromagnetism in the (In,Fe)Sb semiconductor|A. V. Kudrin,Yu. A. Danilov,V. P. Lesnikov,O. V. Vikhrova,D. A. Pavlov,Yu. V. Usov,I. N. Antonov,R. N. Krukov,N. A. Sobolev###
(1115969, 1115969)
 The (In,Fe)Sb layers with the Fe content up to 13 at.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 13, 'at', 0],[119.0, 300, 'K', 3],[274.0, -16, ',', 5],[289.0, 1, ',', 6]

Fe
###High-temperature intrinsic ferromagnetism in the (In,Fe)Sb semiconductor|A. V. Kudrin,Yu. A. Danilov,V. P. Lesnikov,O. V. Vikhrova,D. A. Pavlov,Yu. V. Usov,I. N. Antonov,R. N. Krukov,N. A. Sobolev###
(1115977, 1115977)
 The (In,Fe)Sb layers with the Fe content up to 13 at.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 13, 'at', 0],[111.0, 300, 'K', 3],[266.0, -16, ',', 5],[281.0, 1, ',', 6]

GaAs
###High-temperature intrinsic ferromagnetism in the (In,Fe)Sb semiconductor|A. V. Kudrin,Yu. A. Danilov,V. P. Lesnikov,O. V. Vikhrova,D. A. Pavlov,Yu. V. Usov,I. N. Antonov,R. N. Krukov,N. A. Sobolev###
(1116002, 1116003)
 % have been grown on(001) GaAs substrates using the pulsed laser deposition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 13, 'at', 1],[85.0, 300, 'K', 2],[240.0, -16, ',', 4],[255.0, 1, ',', 5]

In
###High-temperature intrinsic ferromagnetism in the (In,Fe)Sb semiconductor|A. V. Kudrin,Yu. A. Danilov,V. P. Lesnikov,O. V. Vikhrova,D. A. Pavlov,Yu. V. Usov,I. N. Antonov,R. N. Krukov,N. A. Sobolev###
(1116034, 1116034)
 The TEM investigationsshow that the (In,Fe)Sb layers are epitaxial and free of the inclusions of asecond phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 13, 'at', 2],[54.0, 300, 'K', 1],[209.0, -16, ',', 3],[224.0, 1, ',', 4]

Fe
###High-temperature intrinsic ferromagnetism in the (In,Fe)Sb semiconductor|A. V. Kudrin,Yu. A. Danilov,V. P. Lesnikov,O. V. Vikhrova,D. A. Pavlov,Yu. V. Usov,I. N. Antonov,R. N. Krukov,N. A. Sobolev###
(1116036, 1116036)
 The TEM investigationsshow that the (In,Fe)Sb layers are epitaxial and free of the inclusions of asecond phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 13, 'at', 2],[52.0, 300, 'K', 1],[207.0, -16, ',', 3],[222.0, 1, ',', 4]

Sb
###High-temperature intrinsic ferromagnetism in the (In,Fe)Sb semiconductor|A. V. Kudrin,Yu. A. Danilov,V. P. Lesnikov,O. V. Vikhrova,D. A. Pavlov,Yu. V. Usov,I. N. Antonov,R. N. Krukov,N. A. Sobolev###
(1116038, 1116038)
 The TEM investigationsshow that the (In,Fe)Sb layers are epitaxial and free of the inclusions of asecond phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 13, 'at', 2],[50.0, 300, 'K', 1],[205.0, -16, ',', 3],[220.0, 1, ',', 4]

In
###High-temperature intrinsic ferromagnetism in the (In,Fe)Sb semiconductor|A. V. Kudrin,Yu. A. Danilov,V. P. Lesnikov,O. V. Vikhrova,D. A. Pavlov,Yu. V. Usov,I. N. Antonov,R. N. Krukov,N. A. Sobolev###
(1116138, 1116138)
 The resonant character of magnetic circular dichroism confirms theintrinsic ferromagnetism in the (In,Fe)Sb layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 13, 'at', 4],[50.0, 300, 'K', 1],[105.0, -16, ',', 1],[120.0, 1, ',', 2]

Fe
###High-temperature intrinsic ferromagnetism in the (In,Fe)Sb semiconductor|A. V. Kudrin,Yu. A. Danilov,V. P. Lesnikov,O. V. Vikhrova,D. A. Pavlov,Yu. V. Usov,I. N. Antonov,R. N. Krukov,N. A. Sobolev###
(1116140, 1116140)
 The resonant character of magnetic circular dichroism confirms theintrinsic ferromagnetism in the (In,Fe)Sb layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 13, 'at', 4],[52.0, 300, 'K', 1],[103.0, -16, ',', 1],[118.0, 1, ',', 2]

Sb
###High-temperature intrinsic ferromagnetism in the (In,Fe)Sb semiconductor|A. V. Kudrin,Yu. A. Danilov,V. P. Lesnikov,O. V. Vikhrova,D. A. Pavlov,Yu. V. Usov,I. N. Antonov,R. N. Krukov,N. A. Sobolev###
(1116142, 1116142)
 The resonant character of magnetic circular dichroism confirms theintrinsic ferromagnetism in the (In,Fe)Sb layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 13, 'at', 4],[54.0, 300, 'K', 1],[101.0, -16, ',', 1],[116.0, 1, ',', 2]

In
###High-temperature intrinsic ferromagnetism in the (In,Fe)Sb semiconductor|A. V. Kudrin,Yu. A. Danilov,V. P. Lesnikov,O. V. Vikhrova,D. A. Pavlov,Yu. V. Usov,I. N. Antonov,R. N. Krukov,N. A. Sobolev###
(1116163, 1116163)
 We suggest that theferromagnetism of the (In,Fe)Sb matrix is not carrier-mediated and apparentlyis determined by the mechanism of superexchange interaction between Fe atoms(This work was presented at the XXI Symposium Nanophysics and Nanoelectronics,Nizhny Novgorod, March, 13-16, 2017 (book of proceedings v<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 13, 'at', 5],[75.0, 300, 'K', 2],[80.0, -16, ',', 0],[95.0, 1, ',', 1]

Fe
###High-temperature intrinsic ferromagnetism in the (In,Fe)Sb semiconductor|A. V. Kudrin,Yu. A. Danilov,V. P. Lesnikov,O. V. Vikhrova,D. A. Pavlov,Yu. V. Usov,I. N. Antonov,R. N. Krukov,N. A. Sobolev###
(1116165, 1116165)
 We suggest that theferromagnetism of the (In,Fe)Sb matrix is not carrier-mediated and apparentlyis determined by the mechanism of superexchange interaction between Fe atoms(This work was presented at the XXI Symposium Nanophysics and Nanoelectronics,Nizhny Novgorod, March, 13-16, 2017 (book of proceedings v<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 13, 'at', 5],[77.0, 300, 'K', 2],[78.0, -16, ',', 0],[93.0, 1, ',', 1]

Sb
###High-temperature intrinsic ferromagnetism in the (In,Fe)Sb semiconductor|A. V. Kudrin,Yu. A. Danilov,V. P. Lesnikov,O. V. Vikhrova,D. A. Pavlov,Yu. V. Usov,I. N. Antonov,R. N. Krukov,N. A. Sobolev###
(1116167, 1116167)
 We suggest that theferromagnetism of the (In,Fe)Sb matrix is not carrier-mediated and apparentlyis determined by the mechanism of superexchange interaction between Fe atoms(This work was presented at the XXI Symposium Nanophysics and Nanoelectronics,Nizhny Novgorod, March, 13-16, 2017 (book of proceedings v<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[183.0, 13, 'at', 5],[79.0, 300, 'K', 2],[76.0, -16, ',', 0],[91.0, 1, ',', 1]

Fe
###High-temperature intrinsic ferromagnetism in the (In,Fe)Sb semiconductor|A. V. Kudrin,Yu. A. Danilov,V. P. Lesnikov,O. V. Vikhrova,D. A. Pavlov,Yu. V. Usov,I. N. Antonov,R. N. Krukov,N. A. Sobolev###
(1116202, 1116202)
 We suggest that theferromagnetism of the (In,Fe)Sb matrix is not carrier-mediated and apparentlyis determined by the mechanism of superexchange interaction between Fe atoms(This work was presented at the XXI Symposium Nanophysics and Nanoelectronics,Nizhny Novgorod, March, 13-16, 2017 (book of proceedings v<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[218.0, 13, 'at', 5],[114.0, 300, 'K', 2],[41.0, -16, ',', 0],[56.0, 1, ',', 1]

I
###High-temperature intrinsic ferromagnetism in the (In,Fe)Sb semiconductor|A. V. Kudrin,Yu. A. Danilov,V. P. Lesnikov,O. V. Vikhrova,D. A. Pavlov,Yu. V. Usov,I. N. Antonov,R. N. Krukov,N. A. Sobolev###
(1116222, 1116222)
 We suggest that theferromagnetism of the (In,Fe)Sb matrix is not carrier-mediated and apparentlyis determined by the mechanism of superexchange interaction between Fe atoms(This work was presented at the XXI Symposium Nanophysics and Nanoelectronics,Nizhny Novgorod, March, 13-16, 2017 (book of proceedings v<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[238.0, 13, 'at', 5],[134.0, 300, 'K', 2],[21.0, -16, ',', 0],[36.0, 1, ',', 1]

(La0.3Sr0.7)
###Electrostatic tuning of magnetism at the conducting (111) (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)/SrTiO$_3$ interface|V. V. Bal,Z. Huang,K. Han,Ariando,T. Venkatesan,V. Chandrasekhar###
(1116315, 1116320)
Electrostatic tuning of magnetism at the conducting (111) (La0.3Sr0.7)(Al0.65Ta0.35)/SrTiO3 interface.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 20, 'V', 2]

(Al0.65Ta0.35)
###Electrostatic tuning of magnetism at the conducting (111) (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)/SrTiO$_3$ interface|V. V. Bal,Z. Huang,K. Han,Ariando,T. Venkatesan,V. Chandrasekhar###
(1116321, 1116326)
Electrostatic tuning of magnetism at the conducting (111) (La0.3Sr0.7)(Al0.65Ta0.35)/SrTiO3 interface.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0.65,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.35,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 20, 'V', 2]

SrTiO3
###Electrostatic tuning of magnetism at the conducting (111) (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)/SrTiO$_3$ interface|V. V. Bal,Z. Huang,K. Han,Ariando,T. Venkatesan,V. Chandrasekhar###
(1116328, 1116331)
Electrostatic tuning of magnetism at the conducting (111) (La0.3Sr0.7)(Al0.65Ta0.35)/SrTiO3 interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[170.0, 20, 'V', 2]

(La0.3Sr0.7)
###Electrostatic tuning of magnetism at the conducting (111) (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)/SrTiO$_3$ interface|V. V. Bal,Z. Huang,K. Han,Ariando,T. Venkatesan,V. Chandrasekhar###
(1116386, 1116391)
 We present measurements of the low temperature electrical transportproperties of the two dimensional carrier gas that forms at the interface of(111) (La0.3Sr0.7)(Al0.65Ta0.35)/SrTiO3 (L<missing VAR>SAT<missing VAR>/ST<missing VAR>O) asa function of applied back gate voltage, Vg<missing VAR>.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 20, 'V', 1]

(Al0.65Ta0.35)
###Electrostatic tuning of magnetism at the conducting (111) (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)/SrTiO$_3$ interface|V. V. Bal,Z. Huang,K. Han,Ariando,T. Venkatesan,V. Chandrasekhar###
(1116392, 1116397)
 We present measurements of the low temperature electrical transportproperties of the two dimensional carrier gas that forms at the interface of(111) (La0.3Sr0.7)(Al0.65Ta0.35)/SrTiO3 (L<missing VAR>SAT<missing VAR>/ST<missing VAR>O) asa function of applied back gate voltage, Vg<missing VAR>.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0.65,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.35,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 20, 'V', 1]

SrTiO3
###Electrostatic tuning of magnetism at the conducting (111) (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)/SrTiO$_3$ interface|V. V. Bal,Z. Huang,K. Han,Ariando,T. Venkatesan,V. Chandrasekhar###
(1116399, 1116402)
 We present measurements of the low temperature electrical transportproperties of the two dimensional carrier gas that forms at the interface of(111) (La0.3Sr0.7)(Al0.65Ta0.35)/SrTiO3 (L<missing VAR>SAT<missing VAR>/ST<missing VAR>O) asa function of applied back gate voltage, Vg<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 20, 'V', 1]

S
###Electrostatic tuning of magnetism at the conducting (111) (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)/SrTiO$_3$ interface|V. V. Bal,Z. Huang,K. Han,Ariando,T. Venkatesan,V. Chandrasekhar###
(1116406, 1116406)
 We present measurements of the low temperature electrical transportproperties of the two dimensional carrier gas that forms at the interface of(111) (La0.3Sr0.7)(Al0.65Ta0.35)/SrTiO3 (L<missing VAR>SAT<missing VAR>/ST<missing VAR>O) asa function of applied back gate voltage, Vg<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 20, 'V', 1]

S
###Electrostatic tuning of magnetism at the conducting (111) (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)/SrTiO$_3$ interface|V. V. Bal,Z. Huang,K. Han,Ariando,T. Venkatesan,V. Chandrasekhar###
(1116410, 1116410)
 We present measurements of the low temperature electrical transportproperties of the two dimensional carrier gas that forms at the interface of(111) (La0.3Sr0.7)(Al0.65Ta0.35)/SrTiO3 (L<missing VAR>SAT<missing VAR>/ST<missing VAR>O) asa function of applied back gate voltage, Vg<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 20, 'V', 1]

O
###Electrostatic tuning of magnetism at the conducting (111) (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)/SrTiO$_3$ interface|V. V. Bal,Z. Huang,K. Han,Ariando,T. Venkatesan,V. Chandrasekhar###
(1116412, 1116412)
 We present measurements of the low temperature electrical transportproperties of the two dimensional carrier gas that forms at the interface of(111) (La0.3Sr0.7)(Al0.65Ta0.35)/SrTiO3 (L<missing VAR>SAT<missing VAR>/ST<missing VAR>O) asa function of applied back gate voltage, Vg<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 20, 'V', 1]

V
###Electrostatic tuning of magnetism at the conducting (111) (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)/SrTiO$_3$ interface|V. V. Bal,Z. Huang,K. Han,Ariando,T. Venkatesan,V. Chandrasekhar###
(1116433, 1116433)
 We present measurements of the low temperature electrical transportproperties of the two dimensional carrier gas that forms at the interface of(111) (La0.3Sr0.7)(Al0.65Ta0.35)/SrTiO3 (L<missing VAR>SAT<missing VAR>/ST<missing VAR>O) asa function of applied back gate voltage, Vg<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 20, 'V', 1]

As
###Electrostatic tuning of magnetism at the conducting (111) (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)/SrTiO$_3$ interface|V. V. Bal,Z. Huang,K. Han,Ariando,T. Venkatesan,V. Chandrasekhar###
(1116437, 1116437)
 As is found in (111)LaAlO3/SrTiO3 interfaces, the low-field Hall coefficient iselectron-like, but shows a sharp reduction in magnitude below Vg<missing VAR> sim 20 V,indicating the presence of hole-like carriers in the system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 20, 'V', 0]

LaAlO3/SrTiO3
###Electrostatic tuning of magnetism at the conducting (111) (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)/SrTiO$_3$ interface|V. V. Bal,Z. Huang,K. Han,Ariando,T. Venkatesan,V. Chandrasekhar###
(1116450, 1116458)
 As is found in (111)LaAlO3/SrTiO3 interfaces, the low-field Hall coefficient iselectron-like, but shows a sharp reduction in magnitude below Vg<missing VAR> sim 20 V,indicating the presence of hole-like carriers in the system.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[43.0, 20, 'V', 0]

V
###Electrostatic tuning of magnetism at the conducting (111) (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)/SrTiO$_3$ interface|V. V. Bal,Z. Huang,K. Han,Ariando,T. Venkatesan,V. Chandrasekhar###
(1116497, 1116497)
 As is found in (111)LaAlO3/SrTiO3 interfaces, the low-field Hall coefficient iselectron-like, but shows a sharp reduction in magnitude below Vg<missing VAR> sim 20 V,indicating the presence of hole-like carriers in the system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 20, 'V', 0]

V
###Electrostatic tuning of magnetism at the conducting (111) (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)/SrTiO$_3$ interface|V. V. Bal,Z. Huang,K. Han,Ariando,T. Venkatesan,V. Chandrasekhar###
(1116535, 1116535)
 This same value ofVg<missing VAR> correlates approximately with the gate voltage below which themagnetoresistance evolves from nonhysteretic to hysteretic behavior atmillikelvin temperatures, signaling the onset of magnetic order in the system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 20, 'V', 1]

SrTiO3
###Electrostatic tuning of magnetism at the conducting (111) (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)/SrTiO$_3$ interface|V. V. Bal,Z. Huang,K. Han,Ariando,T. Venkatesan,V. Chandrasekhar###
(1116626, 1116629)
We believe our results can provide insight into the mechanism of magnetism inSrTiO3 based systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 20, 'V', 2]

PbTaSe2
###Topological Phase Transition Under Pressure in the Topological Nodal Line Superconductor PbTaSe$_2$|C. Q. Xu,R. Sankar,W. Zhou,Bin Li,Z. D. Han,B. Qian,J. H. Dai,Hengbo Cui,A. F. Bangura,F. C. Chou,Xiaofeng Xu###
(1116666, 1116669)
Topological Phase Transition Under Pressure in the Topological Nodal Line Superconductor PbTaSe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PbTaSe2
###Topological Phase Transition Under Pressure in the Topological Nodal Line Superconductor PbTaSe$_2$|C. Q. Xu,R. Sankar,W. Zhou,Bin Li,Z. D. Han,B. Qian,J. H. Dai,Hengbo Cui,A. F. Bangura,F. C. Chou,Xiaofeng Xu###
(1116718, 1116721)
 A first-order-like resistivity hysteresis is induced by a subtle structuraltransition under hydrostatic pressure in the topological nodal-linesuperconductor PbTaSe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pa
###Topological Phase Transition Under Pressure in the Topological Nodal Line Superconductor PbTaSe$_2$|C. Q. Xu,R. Sankar,W. Zhou,Bin Li,Z. D. Han,B. Qian,J. H. Dai,Hengbo Cui,A. F. Bangura,F. C. Chou,Xiaofeng Xu###
(1116749, 1116749)
 This structure transition is quickly suppressed tozero at pressure sim0.25 G<missing VAR>Pa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Topological Phase Transition Under Pressure in the Topological Nodal Line Superconductor PbTaSe$_2$|C. Q. Xu,R. Sankar,W. Zhou,Bin Li,Z. D. Han,B. Qian,J. H. Dai,Hengbo Cui,A. F. Bangura,F. C. Chou,Xiaofeng Xu###
(1116752, 1116752)
 As a result, superconductivity shows a markedsuppression, accompanied with fundamental changes in the magnetoresistance andHall resistivity, suggesting a Lifshitz transition around sim0.25 G<missing VAR>Pa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pa
###Topological Phase Transition Under Pressure in the Topological Nodal Line Superconductor PbTaSe$_2$|C. Q. Xu,R. Sankar,W. Zhou,Bin Li,Z. D. Han,B. Qian,J. H. Dai,Hengbo Cui,A. F. Bangura,F. C. Chou,Xiaofeng Xu###
(1116807, 1116807)
 As a result, superconductivity shows a markedsuppression, accompanied with fundamental changes in the magnetoresistance andHall resistivity, suggesting a Lifshitz transition around sim0.25 G<missing VAR>Pa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Topological Phase Transition Under Pressure in the Topological Nodal Line Superconductor PbTaSe$_2$|C. Q. Xu,R. Sankar,W. Zhou,Bin Li,Z. D. Han,B. Qian,J. H. Dai,Hengbo Cui,A. F. Bangura,F. C. Chou,Xiaofeng Xu###
(1116848, 1116848)
 Thefirst principles calculations show that the spin-orbit interactions partiallygap out the Dirac nodal line around K point in the Brillouin zone uponapplying a small pressure, whilst the Dirac states around H point arecompletely destroyed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Topological Phase Transition Under Pressure in the Topological Nodal Line Superconductor PbTaSe$_2$|C. Q. Xu,R. Sankar,W. Zhou,Bin Li,Z. D. Han,B. Qian,J. H. Dai,Hengbo Cui,A. F. Bangura,F. C. Chou,Xiaofeng Xu###
(1116882, 1116882)
 Thefirst principles calculations show that the spin-orbit interactions partiallygap out the Dirac nodal line around K point in the Brillouin zone uponapplying a small pressure, whilst the Dirac states around H point arecompletely destroyed.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pa
###Topological Phase Transition Under Pressure in the Topological Nodal Line Superconductor PbTaSe$_2$|C. Q. Xu,R. Sankar,W. Zhou,Bin Li,Z. D. Han,B. Qian,J. H. Dai,Hengbo Cui,A. F. Bangura,F. C. Chou,Xiaofeng Xu###
(1116929, 1116929)
 The calculations further reveal a second structural phasetransition under a pressure as high as sim30 G<missing VAR>Pa, through which a transitionfrom a topologically nontrivial phase to a trivial phase is uncovered, with asuperconducting dome emerging under this high-pressure phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Hydrodynamic flows of non-Fermi liquids: magnetotransport and bilayer drag|Aavishkar A. Patel,Richard A. Davison,Alex Levchenko###
(1117176, 1117176)
 As anexample, we consider frictional drag between two quantum Hall states withhalf-filled lowest Landau levels, each described by a Fermi surface ofcomposite fermions coupled to a U(1) gauge field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.6Sr0.4MnO3
###Hidden peculiar magnetic anisotropy at the interface in a ferromagnetic perovskite-oxide heterostructure|Le Duc Anh,Noboru Okamoto,Munetoshi Seki,Hitoshi Tabata,Masaaki Tanaka,Shinobu Ohya###
(1117439, 1117445)
 Here, by utilizing tunneling anisotropicmagnetoresistance in a single-barrier heterostructure composed ofLa0.6Sr0.4MnO3 (LSMO)/ LaAlO3 (L<missing VAR>AO)/ Nb-doped SrTiO3 (001), we reveal thepresence of a peculiar strong two-fold magnetic anisotropy (M<missing VAR>A) along the[110]c<missing VAR> direction at the LSMO/L<missing VAR>AO interface, which is not observed in bulk LSMO.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.08,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.12,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 0.2, 'eV', 1]

O
###Hidden peculiar magnetic anisotropy at the interface in a ferromagnetic perovskite-oxide heterostructure|Le Duc Anh,Noboru Okamoto,Munetoshi Seki,Hitoshi Tabata,Masaaki Tanaka,Shinobu Ohya###
(1117451, 1117451)
 Here, by utilizing tunneling anisotropicmagnetoresistance in a single-barrier heterostructure composed ofLa0.6Sr0.4MnO3 (LSMO)/ LaAlO3 (L<missing VAR>AO)/ Nb-doped SrTiO3 (001), we reveal thepresence of a peculiar strong two-fold magnetic anisotropy (M<missing VAR>A) along the[110]c<missing VAR> direction at the LSMO/L<missing VAR>AO interface, which is not observed in bulk LSMO.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 0.2, 'eV', 1]

LaAlO3
###Hidden peculiar magnetic anisotropy at the interface in a ferromagnetic perovskite-oxide heterostructure|Le Duc Anh,Noboru Okamoto,Munetoshi Seki,Hitoshi Tabata,Masaaki Tanaka,Shinobu Ohya###
(1117455, 1117458)
 Here, by utilizing tunneling anisotropicmagnetoresistance in a single-barrier heterostructure composed ofLa0.6Sr0.4MnO3 (LSMO)/ LaAlO3 (L<missing VAR>AO)/ Nb-doped SrTiO3 (001), we reveal thepresence of a peculiar strong two-fold magnetic anisotropy (M<missing VAR>A) along the[110]c<missing VAR> direction at the LSMO/L<missing VAR>AO interface, which is not observed in bulk LSMO.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 0.2, 'eV', 1]

O
###Hidden peculiar magnetic anisotropy at the interface in a ferromagnetic perovskite-oxide heterostructure|Le Duc Anh,Noboru Okamoto,Munetoshi Seki,Hitoshi Tabata,Masaaki Tanaka,Shinobu Ohya###
(1117463, 1117463)
 Here, by utilizing tunneling anisotropicmagnetoresistance in a single-barrier heterostructure composed ofLa0.6Sr0.4MnO3 (LSMO)/ LaAlO3 (L<missing VAR>AO)/ Nb-doped SrTiO3 (001), we reveal thepresence of a peculiar strong two-fold magnetic anisotropy (M<missing VAR>A) along the[110]c<missing VAR> direction at the LSMO/L<missing VAR>AO interface, which is not observed in bulk LSMO.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 0.2, 'eV', 1]

Nb
###Hidden peculiar magnetic anisotropy at the interface in a ferromagnetic perovskite-oxide heterostructure|Le Duc Anh,Noboru Okamoto,Munetoshi Seki,Hitoshi Tabata,Masaaki Tanaka,Shinobu Ohya###
(1117467, 1117467)
 Here, by utilizing tunneling anisotropicmagnetoresistance in a single-barrier heterostructure composed ofLa0.6Sr0.4MnO3 (LSMO)/ LaAlO3 (L<missing VAR>AO)/ Nb-doped SrTiO3 (001), we reveal thepresence of a peculiar strong two-fold magnetic anisotropy (M<missing VAR>A) along the[110]c<missing VAR> direction at the LSMO/L<missing VAR>AO interface, which is not observed in bulk LSMO.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 0.2, 'eV', 1]

SrTiO3
###Hidden peculiar magnetic anisotropy at the interface in a ferromagnetic perovskite-oxide heterostructure|Le Duc Anh,Noboru Okamoto,Munetoshi Seki,Hitoshi Tabata,Masaaki Tanaka,Shinobu Ohya###
(1117471, 1117474)
 Here, by utilizing tunneling anisotropicmagnetoresistance in a single-barrier heterostructure composed ofLa0.6Sr0.4MnO3 (LSMO)/ LaAlO3 (L<missing VAR>AO)/ Nb-doped SrTiO3 (001), we reveal thepresence of a peculiar strong two-fold magnetic anisotropy (M<missing VAR>A) along the[110]c<missing VAR> direction at the LSMO/L<missing VAR>AO interface, which is not observed in bulk LSMO.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 0.2, 'eV', 1]

O
###Hidden peculiar magnetic anisotropy at the interface in a ferromagnetic perovskite-oxide heterostructure|Le Duc Anh,Noboru Okamoto,Munetoshi Seki,Hitoshi Tabata,Masaaki Tanaka,Shinobu Ohya###
(1117530, 1117530)
 Here, by utilizing tunneling anisotropicmagnetoresistance in a single-barrier heterostructure composed ofLa0.6Sr0.4MnO3 (LSMO)/ LaAlO3 (L<missing VAR>AO)/ Nb-doped SrTiO3 (001), we reveal thepresence of a peculiar strong two-fold magnetic anisotropy (M<missing VAR>A) along the[110]c<missing VAR> direction at the LSMO/L<missing VAR>AO interface, which is not observed in bulk LSMO.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 0.2, 'eV', 1]

O
###Hidden peculiar magnetic anisotropy at the interface in a ferromagnetic perovskite-oxide heterostructure|Le Duc Anh,Noboru Okamoto,Munetoshi Seki,Hitoshi Tabata,Masaaki Tanaka,Shinobu Ohya###
(1117534, 1117534)
 Here, by utilizing tunneling anisotropicmagnetoresistance in a single-barrier heterostructure composed ofLa0.6Sr0.4MnO3 (LSMO)/ LaAlO3 (L<missing VAR>AO)/ Nb-doped SrTiO3 (001), we reveal thepresence of a peculiar strong two-fold magnetic anisotropy (M<missing VAR>A) along the[110]c<missing VAR> direction at the LSMO/L<missing VAR>AO interface, which is not observed in bulk LSMO.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 0.2, 'eV', 1]

O
###Hidden peculiar magnetic anisotropy at the interface in a ferromagnetic perovskite-oxide heterostructure|Le Duc Anh,Noboru Okamoto,Munetoshi Seki,Hitoshi Tabata,Masaaki Tanaka,Shinobu Ohya###
(1117554, 1117554)
 Here, by utilizing tunneling anisotropicmagnetoresistance in a single-barrier heterostructure composed ofLa0.6Sr0.4MnO3 (LSMO)/ LaAlO3 (L<missing VAR>AO)/ Nb-doped SrTiO3 (001), we reveal thepresence of a peculiar strong two-fold magnetic anisotropy (M<missing VAR>A) along the[110]c<missing VAR> direction at the LSMO/L<missing VAR>AO interface, which is not observed in bulk LSMO.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 0.2, 'eV', 1]

O
###Hidden peculiar magnetic anisotropy at the interface in a ferromagnetic perovskite-oxide heterostructure|Le Duc Anh,Noboru Okamoto,Munetoshi Seki,Hitoshi Tabata,Masaaki Tanaka,Shinobu Ohya###
(1117609, 1117609)
This M<missing VAR>A shows unknown behavior that the easy magnetization axis rotates by90deg at an energy of 0.2 eV below the Fermi level in LSMO.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 0.2, 'eV', 0]

O
###Hidden peculiar magnetic anisotropy at the interface in a ferromagnetic perovskite-oxide heterostructure|Le Duc Anh,Noboru Okamoto,Munetoshi Seki,Hitoshi Tabata,Masaaki Tanaka,Shinobu Ohya###
(1117648, 1117648)
 We attributethis phenomenon to the transition between the eg and t2g bands at the LSMOinterface.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 0.2, 'eV', 1]

Li1
###The effects of oxygen in spinel oxide Li1+xTi2-xO4-delta thin films|Yanli Jia,Ge He,Wei Hu,Hua Yang,Zhenzhong Yang,Heshan Yu,Qinghua Zhang,Jinan Shi,Zefeng Lin,Jie Yuan,Beiyi Zhu,Lin Gu,Hong Li,Kui Jin###
(1117745, 1117746)
The effects of oxygen in spinel oxide Li1x<missing VAR>Ti2-xO4-delta thin films.
Featurization terminated normally.
0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ti2-xO4
###The effects of oxygen in spinel oxide Li1+xTi2-xO4-delta thin films|Yanli Jia,Ge He,Wei Hu,Hua Yang,Zhenzhong Yang,Heshan Yu,Qinghua Zhang,Jinan Shi,Zefeng Lin,Jie Yuan,Beiyi Zhu,Lin Gu,Hong Li,Kui Jin###
(1117748, 1117753)
The effects of oxygen in spinel oxide Li1x<missing VAR>Ti2-xO4-delta thin films.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

LiTi2O4
###The effects of oxygen in spinel oxide Li1+xTi2-xO4-delta thin films|Yanli Jia,Ge He,Wei Hu,Hua Yang,Zhenzhong Yang,Heshan Yu,Qinghua Zhang,Jinan Shi,Zefeng Lin,Jie Yuan,Beiyi Zhu,Lin Gu,Hong Li,Kui Jin###
(1117770, 1117774)
 The evolution from superconducting LiTi2O4-delta to insulating Li4Ti5O12 thinfilms has been studied by precisely adjusting the oxygen pressure during thesample fabrication process.
Featurization terminated normally.
0,0,0.14285714285714285,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Li4Ti5O12
###The effects of oxygen in spinel oxide Li1+xTi2-xO4-delta thin films|Yanli Jia,Ge He,Wei Hu,Hua Yang,Zhenzhong Yang,Heshan Yu,Qinghua Zhang,Jinan Shi,Zefeng Lin,Jie Yuan,Beiyi Zhu,Lin Gu,Hong Li,Kui Jin###
(1117782, 1117787)
 The evolution from superconducting LiTi2O4-delta to insulating Li4Ti5O12 thinfilms has been studied by precisely adjusting the oxygen pressure during thesample fabrication process.
Featurization terminated normally.
0,0,0.19047619047619047,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23809523809523808,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###The effects of oxygen in spinel oxide Li1+xTi2-xO4-delta thin films|Yanli Jia,Ge He,Wei Hu,Hua Yang,Zhenzhong Yang,Heshan Yu,Qinghua Zhang,Jinan Shi,Zefeng Lin,Jie Yuan,Beiyi Zhu,Lin Gu,Hong Li,Kui Jin###
(1117824, 1117824)
 In the superconducting LiTi2O4-delta films, withthe increase of oxygen pressure, the oxygen vacancies are filled, and thec<missing VAR>-axis lattice constant decreases gradually.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LiTi2O4
###The effects of oxygen in spinel oxide Li1+xTi2-xO4-delta thin films|Yanli Jia,Ge He,Wei Hu,Hua Yang,Zhenzhong Yang,Heshan Yu,Qinghua Zhang,Jinan Shi,Zefeng Lin,Jie Yuan,Beiyi Zhu,Lin Gu,Hong Li,Kui Jin###
(1117830, 1117834)
 In the superconducting LiTi2O4-delta films, withthe increase of oxygen pressure, the oxygen vacancies are filled, and thec<missing VAR>-axis lattice constant decreases gradually.
Featurization terminated normally.
0,0,0.14285714285714285,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Li4Ti5O12
###The effects of oxygen in spinel oxide Li1+xTi2-xO4-delta thin films|Yanli Jia,Ge He,Wei Hu,Hua Yang,Zhenzhong Yang,Heshan Yu,Qinghua Zhang,Jinan Shi,Zefeng Lin,Jie Yuan,Beiyi Zhu,Lin Gu,Hong Li,Kui Jin###
(1117934, 1117939)
 With the increase of the oxygenpressure to a certain critical value, the c<missing VAR>-axis lattice constant becomesstable, which implies that the Li4Ti5O12 phase comes into being.
Featurization terminated normally.
0,0,0.19047619047619047,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23809523809523808,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LiTi2O4
###The effects of oxygen in spinel oxide Li1+xTi2-xO4-delta thin films|Yanli Jia,Ge He,Wei Hu,Hua Yang,Zhenzhong Yang,Heshan Yu,Qinghua Zhang,Jinan Shi,Zefeng Lin,Jie Yuan,Beiyi Zhu,Lin Gu,Hong Li,Kui Jin###
(1118063, 1118067)
 The theoretical explanation ofthe oxygen effects on the structure and superconductivity of LiTi2O4-delta hasalso been discussed in this work.
Featurization terminated normally.
0,0,0.14285714285714285,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La2-x
###Fermi Surface reconstruction and anomalous low temperature resistivity in electron-doped La2-xCexCuO4|Tarapada Sarkar,P. R. Mandal,J. S. Higgins,Yi Zhao,Heshan Yu,Kui Jin,Richard L. Greene###
(1118117, 1118120)
Fermi Surface reconstruction and anomalous low temperature resistivity in electron-doped La2-xCexCuO4.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[60.0, 14, 'T', 1],[70.0, 1.8, 'K', 1]

CuO4
###Fermi Surface reconstruction and anomalous low temperature resistivity in electron-doped La2-xCexCuO4|Tarapada Sarkar,P. R. Mandal,J. S. Higgins,Yi Zhao,Heshan Yu,Kui Jin,Richard L. Greene###
(1118122, 1118124)
Fermi Surface reconstruction and anomalous low temperature resistivity in electron-doped La2-xCexCuO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 14, 'T', 1],[66.0, 1.8, 'K', 1]

La2-x
###Fermi Surface reconstruction and anomalous low temperature resistivity in electron-doped La2-xCexCuO4|Tarapada Sarkar,P. R. Mandal,J. S. Higgins,Yi Zhao,Heshan Yu,Kui Jin,Richard L. Greene###
(1118148, 1118151)
 We report ab-plane Hall Effect and magnetoresistivity measurements onLa2-xCexCuO4 thin films as a function of doping for magnetic fields up to 14Tand temperatures down to 1.8K.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[29.0, 14, 'T', 0],[39.0, 1.8, 'K', 0]

CuO4
###Fermi Surface reconstruction and anomalous low temperature resistivity in electron-doped La2-xCexCuO4|Tarapada Sarkar,P. R. Mandal,J. S. Higgins,Yi Zhao,Heshan Yu,Kui Jin,Richard L. Greene###
(1118153, 1118155)
 We report ab-plane Hall Effect and magnetoresistivity measurements onLa2-xCexCuO4 thin films as a function of doping for magnetic fields up to 14Tand temperatures down to 1.8K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 14, 'T', 0],[35.0, 1.8, 'K', 0]

K
###Fermi Surface reconstruction and anomalous low temperature resistivity in electron-doped La2-xCexCuO4|Tarapada Sarkar,P. R. Mandal,J. S. Higgins,Yi Zhao,Heshan Yu,Kui Jin,Richard L. Greene###
(1118210, 1118210)
 A dramatic change in the low temperature (1.8 K)normal state Hall coefficient is found near a doping Ce0.14.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 14, 'T', 1],[20.0, 1.8, 'K', 1]

Ce0.14
###Fermi Surface reconstruction and anomalous low temperature resistivity in electron-doped La2-xCexCuO4|Tarapada Sarkar,P. R. Mandal,J. S. Higgins,Yi Zhao,Heshan Yu,Kui Jin,Richard L. Greene###
(1118232, 1118233)
 A dramatic change in the low temperature (1.8 K)normal state Hall coefficient is found near a doping Ce0.14.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 14, 'T', 1],[42.0, 1.8, 'K', 1]

Ce
###Fermi Surface reconstruction and anomalous low temperature resistivity in electron-doped La2-xCexCuO4|Tarapada Sarkar,P. R. Mandal,J. S. Higgins,Yi Zhao,Heshan Yu,Kui Jin,Richard L. Greene###
(1118288, 1118288)
 This, along witha nonlinear Hall resistance as a function of magnetic field, suggests that theFermi surface reconstructs at a critical doping of Ce 0.14.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 14, 'T', 2],[98.0, 1.8, 'K', 2]

Ce0.14
###Fermi Surface reconstruction and anomalous low temperature resistivity in electron-doped La2-xCexCuO4|Tarapada Sarkar,P. R. Mandal,J. S. Higgins,Yi Zhao,Heshan Yu,Kui Jin,Richard L. Greene###
(1118340, 1118341)
 Low temperature linear-in-T<missing VAR> resistivity is found at Ce0.14,but anomalously, also at higher doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 14, 'T', 4],[150.0, 1.8, 'K', 4]

NiFe/Pt
###Semitransparent anisotropic and spin Hall magnetoresistance sensor enabled by spin-orbit toque biasing|Yumeng Yang,Yanjun Xu,Hang Xie,Baoxi Xu,Yihong Wu###
(1118462, 1118465)
 We demonstrate an ultrathin and semitransparent anisotropic and spin Hallmagnetoresistance sensor based on NiFe/Pt heterostructure.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[54.0, 4, 'nm', 1],[183.0, 202.9, 'm', 3],[196.0, 5, '%', 3],[211.0, 20, 'nT', 3],[229.0, 50, '%', 4]

NiFe/Pt
###Semitransparent anisotropic and spin Hall magnetoresistance sensor enabled by spin-orbit toque biasing|Yumeng Yang,Yanjun Xu,Hang Xie,Baoxi Xu,Yihong Wu###
(1118561, 1118564)
 Despite the extremely simple design, the spin-orbit torqueeffective field biased NiFe/Pt sensor exhibits level of linearity andsensitivity comparable to those of sensors using more complex linearizationschemes.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[42.0, 4, 'nm', 1],[84.0, 202.9, 'm', 1],[97.0, 5, '%', 1],[112.0, 20, 'nT', 1],[130.0, 50, '%', 2]

In
###Semitransparent anisotropic and spin Hall magnetoresistance sensor enabled by spin-orbit toque biasing|Yumeng Yang,Yanjun Xu,Hang Xie,Baoxi Xu,Yihong Wu###
(1118603, 1118603)
 In a proof-of-concept design using a full Wheatstone bridge comprisingof four sensing elements, we obtained a sensitivity up to 202.9 mOmega/Oe,linearity error below 5%, and a detection limit down to 20 nT.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 4, 'nm', 2],[45.0, 202.9, 'm', 0],[58.0, 5, '%', 0],[73.0, 20, 'nT', 0],[91.0, 50, '%', 1]

In
###Emerging Magnetic Order In Copper Induced By Proximity To Cobalt: A Detailed Soft X-Ray Spectroscopy Study|Zhao Chen,Hendrik Ohldag,Tyler Chase,Sohrab Sani,Roopali Kukreja,Stefano Bonetti,Andrew D. Kent,Eric E. Fullerton,Hermann A. Dürr,Joachim Stöhr###
(1118720, 1118720)
Emerging Magnetic Order In Copper Induced By Proximity To Cobalt A Detailed Soft X<missing VAR>-Ray Spectroscopy Study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Emerging Magnetic Order In Copper Induced By Proximity To Cobalt: A Detailed Soft X-Ray Spectroscopy Study|Zhao Chen,Hendrik Ohldag,Tyler Chase,Sohrab Sani,Roopali Kukreja,Stefano Bonetti,Andrew D. Kent,Eric E. Fullerton,Hermann A. Dürr,Joachim Stöhr###
(1118766, 1118766)
 We present an x<missing VAR>-ray magnetic dichroism (XMCD) and soft x<missing VAR>-ray absorptionspectroscopy (X<missing VAR>AS) study to address the nature of emerging magnetic order inmetallic Copper as Cobalt is added to the matrix.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Emerging Magnetic Order In Copper Induced By Proximity To Cobalt: A Detailed Soft X-Ray Spectroscopy Study|Zhao Chen,Hendrik Ohldag,Tyler Chase,Sohrab Sani,Roopali Kukreja,Stefano Bonetti,Andrew D. Kent,Eric E. Fullerton,Hermann A. Dürr,Joachim Stöhr###
(1118786, 1118786)
 We present an x<missing VAR>-ray magnetic dichroism (XMCD) and soft x<missing VAR>-ray absorptionspectroscopy (X<missing VAR>AS) study to address the nature of emerging magnetic order inmetallic Copper as Cobalt is added to the matrix.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Emerging Magnetic Order In Copper Induced By Proximity To Cobalt: A Detailed Soft X-Ray Spectroscopy Study|Zhao Chen,Hendrik Ohldag,Tyler Chase,Sohrab Sani,Roopali Kukreja,Stefano Bonetti,Andrew D. Kent,Eric E. Fullerton,Hermann A. Dürr,Joachim Stöhr###
(1118850, 1118850)
 For this purpose line shapeand energy position of X<missing VAR>AS and XMCD<missing VAR> spectra will be analyzed for a series ofCo/Cu alloys as well as a multilayer reference.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Emerging Magnetic Order In Copper Induced By Proximity To Cobalt: A Detailed Soft X-Ray Spectroscopy Study|Zhao Chen,Hendrik Ohldag,Tyler Chase,Sohrab Sani,Roopali Kukreja,Stefano Bonetti,Andrew D. Kent,Eric E. Fullerton,Hermann A. Dürr,Joachim Stöhr###
(1118856, 1118856)
 For this purpose line shapeand energy position of X<missing VAR>AS and XMCD<missing VAR> spectra will be analyzed for a series ofCo/Cu alloys as well as a multilayer reference.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co/Cu
###Emerging Magnetic Order In Copper Induced By Proximity To Cobalt: A Detailed Soft X-Ray Spectroscopy Study|Zhao Chen,Hendrik Ohldag,Tyler Chase,Sohrab Sani,Roopali Kukreja,Stefano Bonetti,Andrew D. Kent,Eric E. Fullerton,Hermann A. Dürr,Joachim Stöhr###
(1118876, 1118878)
 For this purpose line shapeand energy position of X<missing VAR>AS and XMCD<missing VAR> spectra will be analyzed for a series ofCo/Cu alloys as well as a multilayer reference.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Cu
###Emerging Magnetic Order In Copper Induced By Proximity To Cobalt: A Detailed Soft X-Ray Spectroscopy Study|Zhao Chen,Hendrik Ohldag,Tyler Chase,Sohrab Sani,Roopali Kukreja,Stefano Bonetti,Andrew D. Kent,Eric E. Fullerton,Hermann A. Dürr,Joachim Stöhr###
(1118908, 1118908)
 We observe an increasedhybridization between Cu and Co sites as well as increased localization of theCu d<missing VAR>-electrons and an induced magnetic moment in Cu.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Emerging Magnetic Order In Copper Induced By Proximity To Cobalt: A Detailed Soft X-Ray Spectroscopy Study|Zhao Chen,Hendrik Ohldag,Tyler Chase,Sohrab Sani,Roopali Kukreja,Stefano Bonetti,Andrew D. Kent,Eric E. Fullerton,Hermann A. Dürr,Joachim Stöhr###
(1118912, 1118912)
 We observe an increasedhybridization between Cu and Co sites as well as increased localization of theCu d<missing VAR>-electrons and an induced magnetic moment in Cu.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Emerging Magnetic Order In Copper Induced By Proximity To Cobalt: A Detailed Soft X-Ray Spectroscopy Study|Zhao Chen,Hendrik Ohldag,Tyler Chase,Sohrab Sani,Roopali Kukreja,Stefano Bonetti,Andrew D. Kent,Eric E. Fullerton,Hermann A. Dürr,Joachim Stöhr###
(1118931, 1118931)
 We observe an increasedhybridization between Cu and Co sites as well as increased localization of theCu d<missing VAR>-electrons and an induced magnetic moment in Cu.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Emerging Magnetic Order In Copper Induced By Proximity To Cobalt: A Detailed Soft X-Ray Spectroscopy Study|Zhao Chen,Hendrik Ohldag,Tyler Chase,Sohrab Sani,Roopali Kukreja,Stefano Bonetti,Andrew D. Kent,Eric E. Fullerton,Hermann A. Dürr,Joachim Stöhr###
(1118949, 1118949)
 We observe an increasedhybridization between Cu and Co sites as well as increased localization of theCu d<missing VAR>-electrons and an induced magnetic moment in Cu.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Emerging Magnetic Order In Copper Induced By Proximity To Cobalt: A Detailed Soft X-Ray Spectroscopy Study|Zhao Chen,Hendrik Ohldag,Tyler Chase,Sohrab Sani,Roopali Kukreja,Stefano Bonetti,Andrew D. Kent,Eric E. Fullerton,Hermann A. Dürr,Joachim Stöhr###
(1119056, 1119056)
 The presented results will further enable us tointerpret Cu XMCD<missing VAR> and X<missing VAR>AS spectra acquired from unknown Co/Cu samples toidentify the environment of Cu atoms exhibiting proximity induced magnetism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Emerging Magnetic Order In Copper Induced By Proximity To Cobalt: A Detailed Soft X-Ray Spectroscopy Study|Zhao Chen,Hendrik Ohldag,Tyler Chase,Sohrab Sani,Roopali Kukreja,Stefano Bonetti,Andrew D. Kent,Eric E. Fullerton,Hermann A. Dürr,Joachim Stöhr###
(1119060, 1119060)
 The presented results will further enable us tointerpret Cu XMCD<missing VAR> and X<missing VAR>AS spectra acquired from unknown Co/Cu samples toidentify the environment of Cu atoms exhibiting proximity induced magnetism.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Emerging Magnetic Order In Copper Induced By Proximity To Cobalt: A Detailed Soft X-Ray Spectroscopy Study|Zhao Chen,Hendrik Ohldag,Tyler Chase,Sohrab Sani,Roopali Kukreja,Stefano Bonetti,Andrew D. Kent,Eric E. Fullerton,Hermann A. Dürr,Joachim Stöhr###
(1119067, 1119067)
 The presented results will further enable us tointerpret Cu XMCD<missing VAR> and X<missing VAR>AS spectra acquired from unknown Co/Cu samples toidentify the environment of Cu atoms exhibiting proximity induced magnetism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co/Cu
###Emerging Magnetic Order In Copper Induced By Proximity To Cobalt: A Detailed Soft X-Ray Spectroscopy Study|Zhao Chen,Hendrik Ohldag,Tyler Chase,Sohrab Sani,Roopali Kukreja,Stefano Bonetti,Andrew D. Kent,Eric E. Fullerton,Hermann A. Dürr,Joachim Stöhr###
(1119077, 1119079)
 The presented results will further enable us tointerpret Cu XMCD<missing VAR> and X<missing VAR>AS spectra acquired from unknown Co/Cu samples toidentify the environment of Cu atoms exhibiting proximity induced magnetism.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Cu
###Emerging Magnetic Order In Copper Induced By Proximity To Cobalt: A Detailed Soft X-Ray Spectroscopy Study|Zhao Chen,Hendrik Ohldag,Tyler Chase,Sohrab Sani,Roopali Kukreja,Stefano Bonetti,Andrew D. Kent,Eric E. Fullerton,Hermann A. Dürr,Joachim Stöhr###
(1119094, 1119094)
 The presented results will further enable us tointerpret Cu XMCD<missing VAR> and X<missing VAR>AS spectra acquired from unknown Co/Cu samples toidentify the environment of Cu atoms exhibiting proximity induced magnetism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BI
###Backreacted DBI Magnetotransport with Momentum Dissipation|Sera Cremonini,Anthony Hoover,Li Li###
(1119118, 1119119)
Backreacted D<missing VAR>BI Magnetotransport with Momentum Dissipation.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Backreacted DBI Magnetotransport with Momentum Dissipation|Sera Cremonini,Anthony Hoover,Li Li###
(1119220, 1119220)
 The generic structure of the D<missing VAR>C conductivitymatrix for these theories is extremely rich, and is significantly more complexthan that obtained in the probe approximation.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaAlO3
###Polarity-tunable magnetic tunnel junctions based on ferromagnetism at oxide heterointerfaces|Thach D. N. Ngo,Jung-Won Chang,Kyujoon Lee,Seungju Han,Joon Sung Lee,Young Heon Kim,Myung-Hwa Jung,Yong-Joo Doh,Mahn-Soo Choi,Jonghyun Song,Jinhee Kim###
(1119503, 1119506)
 Complex oxide systems have attracted considerable attention because of theirfascinating properties, including the magnetic ordering at the conductinginterface between two band insulators, such as LaAlO3 (L<missing VAR>AO) and SrTiO3 (ST<missing VAR>O).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 10, 'K', 2]

O
###Polarity-tunable magnetic tunnel junctions based on ferromagnetism at oxide heterointerfaces|Thach D. N. Ngo,Jung-Won Chang,Kyujoon Lee,Seungju Han,Joon Sung Lee,Young Heon Kim,Myung-Hwa Jung,Yong-Joo Doh,Mahn-Soo Choi,Jonghyun Song,Jinhee Kim###
(1119511, 1119511)
 Complex oxide systems have attracted considerable attention because of theirfascinating properties, including the magnetic ordering at the conductinginterface between two band insulators, such as LaAlO3 (L<missing VAR>AO) and SrTiO3 (ST<missing VAR>O).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 10, 'K', 2]

SrTiO3
###Polarity-tunable magnetic tunnel junctions based on ferromagnetism at oxide heterointerfaces|Thach D. N. Ngo,Jung-Won Chang,Kyujoon Lee,Seungju Han,Joon Sung Lee,Young Heon Kim,Myung-Hwa Jung,Yong-Joo Doh,Mahn-Soo Choi,Jonghyun Song,Jinhee Kim###
(1119516, 1119519)
 Complex oxide systems have attracted considerable attention because of theirfascinating properties, including the magnetic ordering at the conductinginterface between two band insulators, such as LaAlO3 (L<missing VAR>AO) and SrTiO3 (ST<missing VAR>O).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 10, 'K', 2]

S
###Polarity-tunable magnetic tunnel junctions based on ferromagnetism at oxide heterointerfaces|Thach D. N. Ngo,Jung-Won Chang,Kyujoon Lee,Seungju Han,Joon Sung Lee,Young Heon Kim,Myung-Hwa Jung,Yong-Joo Doh,Mahn-Soo Choi,Jonghyun Song,Jinhee Kim###
(1119522, 1119522)
 Complex oxide systems have attracted considerable attention because of theirfascinating properties, including the magnetic ordering at the conductinginterface between two band insulators, such as LaAlO3 (L<missing VAR>AO) and SrTiO3 (ST<missing VAR>O).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 10, 'K', 2]

O
###Polarity-tunable magnetic tunnel junctions based on ferromagnetism at oxide heterointerfaces|Thach D. N. Ngo,Jung-Won Chang,Kyujoon Lee,Seungju Han,Joon Sung Lee,Young Heon Kim,Myung-Hwa Jung,Yong-Joo Doh,Mahn-Soo Choi,Jonghyun Song,Jinhee Kim###
(1119524, 1119524)
 Complex oxide systems have attracted considerable attention because of theirfascinating properties, including the magnetic ordering at the conductinginterface between two band insulators, such as LaAlO3 (L<missing VAR>AO) and SrTiO3 (ST<missing VAR>O).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 10, 'K', 2]

O/S
###Polarity-tunable magnetic tunnel junctions based on ferromagnetism at oxide heterointerfaces|Thach D. N. Ngo,Jung-Won Chang,Kyujoon Lee,Seungju Han,Joon Sung Lee,Young Heon Kim,Myung-Hwa Jung,Yong-Joo Doh,Mahn-Soo Choi,Jonghyun Song,Jinhee Kim###
(1119554, 1119556)
However, the manipulation of the spin degree of freedom at the L<missing VAR>AO/ST<missing VAR>Oheterointerface has remained elusive.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[98.0, 10, 'K', 1]

O
###Polarity-tunable magnetic tunnel junctions based on ferromagnetism at oxide heterointerfaces|Thach D. N. Ngo,Jung-Won Chang,Kyujoon Lee,Seungju Han,Joon Sung Lee,Young Heon Kim,Myung-Hwa Jung,Yong-Joo Doh,Mahn-Soo Choi,Jonghyun Song,Jinhee Kim###
(1119558, 1119558)
However, the manipulation of the spin degree of freedom at the L<missing VAR>AO/ST<missing VAR>Oheterointerface has remained elusive.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 10, 'K', 1]

Co
###Polarity-tunable magnetic tunnel junctions based on ferromagnetism at oxide heterointerfaces|Thach D. N. Ngo,Jung-Won Chang,Kyujoon Lee,Seungju Han,Joon Sung Lee,Young Heon Kim,Myung-Hwa Jung,Yong-Joo Doh,Mahn-Soo Choi,Jonghyun Song,Jinhee Kim###
(1119592, 1119592)
 Here, we have fabricated hybrid magnetictunnel junctions consisting of Co and L<missing VAR>AO/ST<missing VAR>O ferromagnets with the insertionof a Ti layer in between, which clearly exhibit magnetic switching and thetunnelling magnetoresistance (TMR) effect below 10 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 10, 'K', 0]

O/S
###Polarity-tunable magnetic tunnel junctions based on ferromagnetism at oxide heterointerfaces|Thach D. N. Ngo,Jung-Won Chang,Kyujoon Lee,Seungju Han,Joon Sung Lee,Young Heon Kim,Myung-Hwa Jung,Yong-Joo Doh,Mahn-Soo Choi,Jonghyun Song,Jinhee Kim###
(1119598, 1119600)
 Here, we have fabricated hybrid magnetictunnel junctions consisting of Co and L<missing VAR>AO/ST<missing VAR>O ferromagnets with the insertionof a Ti layer in between, which clearly exhibit magnetic switching and thetunnelling magnetoresistance (TMR) effect below 10 K.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[54.0, 10, 'K', 0]

O
###Polarity-tunable magnetic tunnel junctions based on ferromagnetism at oxide heterointerfaces|Thach D. N. Ngo,Jung-Won Chang,Kyujoon Lee,Seungju Han,Joon Sung Lee,Young Heon Kim,Myung-Hwa Jung,Yong-Joo Doh,Mahn-Soo Choi,Jonghyun Song,Jinhee Kim###
(1119602, 1119602)
 Here, we have fabricated hybrid magnetictunnel junctions consisting of Co and L<missing VAR>AO/ST<missing VAR>O ferromagnets with the insertionof a Ti layer in between, which clearly exhibit magnetic switching and thetunnelling magnetoresistance (TMR) effect below 10 K.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 10, 'K', 0]

Ti
###Polarity-tunable magnetic tunnel junctions based on ferromagnetism at oxide heterointerfaces|Thach D. N. Ngo,Jung-Won Chang,Kyujoon Lee,Seungju Han,Joon Sung Lee,Young Heon Kim,Myung-Hwa Jung,Yong-Joo Doh,Mahn-Soo Choi,Jonghyun Song,Jinhee Kim###
(1119617, 1119617)
 Here, we have fabricated hybrid magnetictunnel junctions consisting of Co and L<missing VAR>AO/ST<missing VAR>O ferromagnets with the insertionof a Ti layer in between, which clearly exhibit magnetic switching and thetunnelling magnetoresistance (TMR) effect below 10 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 10, 'K', 0]

O/S
###Polarity-tunable magnetic tunnel junctions based on ferromagnetism at oxide heterointerfaces|Thach D. N. Ngo,Jung-Won Chang,Kyujoon Lee,Seungju Han,Joon Sung Lee,Young Heon Kim,Myung-Hwa Jung,Yong-Joo Doh,Mahn-Soo Choi,Jonghyun Song,Jinhee Kim###
(1119705, 1119707)
 The magnitude and the ofthe TMR are strongly dependent on the direction of the rotational magneticfield parallel to the L<missing VAR>AO/ST<missing VAR>O plane, which is attributed to a strongRashba-type spin orbit coupling in the L<missing VAR>AO/ST<missing VAR>O heterostructure.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[51.0, 10, 'K', 1]

O
###Polarity-tunable magnetic tunnel junctions based on ferromagnetism at oxide heterointerfaces|Thach D. N. Ngo,Jung-Won Chang,Kyujoon Lee,Seungju Han,Joon Sung Lee,Young Heon Kim,Myung-Hwa Jung,Yong-Joo Doh,Mahn-Soo Choi,Jonghyun Song,Jinhee Kim###
(1119709, 1119709)
 The magnitude and the ofthe TMR are strongly dependent on the direction of the rotational magneticfield parallel to the L<missing VAR>AO/ST<missing VAR>O plane, which is attributed to a strongRashba-type spin orbit coupling in the L<missing VAR>AO/ST<missing VAR>O heterostructure.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 10, 'K', 1]

O/S
###Polarity-tunable magnetic tunnel junctions based on ferromagnetism at oxide heterointerfaces|Thach D. N. Ngo,Jung-Won Chang,Kyujoon Lee,Seungju Han,Joon Sung Lee,Young Heon Kim,Myung-Hwa Jung,Yong-Joo Doh,Mahn-Soo Choi,Jonghyun Song,Jinhee Kim###
(1119743, 1119745)
 The magnitude and the ofthe TMR are strongly dependent on the direction of the rotational magneticfield parallel to the L<missing VAR>AO/ST<missing VAR>O plane, which is attributed to a strongRashba-type spin orbit coupling in the L<missing VAR>AO/ST<missing VAR>O heterostructure.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[89.0, 10, 'K', 1]

O
###Polarity-tunable magnetic tunnel junctions based on ferromagnetism at oxide heterointerfaces|Thach D. N. Ngo,Jung-Won Chang,Kyujoon Lee,Seungju Han,Joon Sung Lee,Young Heon Kim,Myung-Hwa Jung,Yong-Joo Doh,Mahn-Soo Choi,Jonghyun Song,Jinhee Kim###
(1119747, 1119747)
 The magnitude and the ofthe TMR are strongly dependent on the direction of the rotational magneticfield parallel to the L<missing VAR>AO/ST<missing VAR>O plane, which is attributed to a strongRashba-type spin orbit coupling in the L<missing VAR>AO/ST<missing VAR>O heterostructure.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 10, 'K', 1]

O/S
###Polarity-tunable magnetic tunnel junctions based on ferromagnetism at oxide heterointerfaces|Thach D. N. Ngo,Jung-Won Chang,Kyujoon Lee,Seungju Han,Joon Sung Lee,Young Heon Kim,Myung-Hwa Jung,Yong-Joo Doh,Mahn-Soo Choi,Jonghyun Song,Jinhee Kim###
(1119784, 1119786)
 Our studyprovides a further support for the existence of the macroscopic ferromagnetismat L<missing VAR>AO/ST<missing VAR>O heterointerfaces and opens a novel route to realize interfacialspintronics devices.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[130.0, 10, 'K', 2]

O
###Polarity-tunable magnetic tunnel junctions based on ferromagnetism at oxide heterointerfaces|Thach D. N. Ngo,Jung-Won Chang,Kyujoon Lee,Seungju Han,Joon Sung Lee,Young Heon Kim,Myung-Hwa Jung,Yong-Joo Doh,Mahn-Soo Choi,Jonghyun Song,Jinhee Kim###
(1119788, 1119788)
 Our studyprovides a further support for the existence of the macroscopic ferromagnetismat L<missing VAR>AO/ST<missing VAR>O heterointerfaces and opens a novel route to realize interfacialspintronics devices.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 10, 'K', 2]

AlInN/GaN
###Scattering, weak localization and Shubnikov-de Haas oscillation in high carrier density AlInN/GaN heterostructures|Leizhi Wang,Ming Yin,Asif Khan,Sakib Muhtadi,Fatima Asif,Eun Sang Choi,Timir Datta###
(1119847, 1119852)
Scattering, weak localization and Shubnikov-de Haas oscillation in high carrier density AlInN/GaN heterostructures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[236.0, 0.2327, 'me', 5],[295.0, 20, 'K', 6]

AlInN/GaN
###Scattering, weak localization and Shubnikov-de Haas oscillation in high carrier density AlInN/GaN heterostructures|Leizhi Wang,Ming Yin,Asif Khan,Sakib Muhtadi,Fatima Asif,Eun Sang Choi,Timir Datta###
(1119892, 1119897)
 We provide the first observation of weak localization in high carrier densitytwo-dimensional electron gas in AlInN/GaN heterostructures; at low temperaturesand low fields the conductivity increases with increasing magnetic field.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[191.0, 0.2327, 'me', 4],[250.0, 20, 'K', 5]

H
###Scattering, weak localization and Shubnikov-de Haas oscillation in high carrier density AlInN/GaN heterostructures|Leizhi Wang,Ming Yin,Asif Khan,Sakib Muhtadi,Fatima Asif,Eun Sang Choi,Timir Datta###
(1120025, 1120025)
Shubnikov-de Haas (SdH) oscillations at high magnetic fields are also observed.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 0.2327, 'me', 1],[122.0, 20, 'K', 2]

H
###Scattering, weak localization and Shubnikov-de Haas oscillation in high carrier density AlInN/GaN heterostructures|Leizhi Wang,Ming Yin,Asif Khan,Sakib Muhtadi,Fatima Asif,Eun Sang Choi,Timir Datta###
(1120059, 1120059)
From the temperature dependent amplitude of SdH oscillation and Dingle plot,the effective mass of electron is extracted to be 0.2327me; in addition thequantum lifetime is smaller than transport time from Hall measurement,indicating small angle scattering such as from remote ionized impurities isdominant.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 0.2327, 'me', 0],[88.0, 20, 'K', 1]

Bi2Se3
###Coexistence of bulk and surface states probed by Shubnikov-de Haas oscillations in Bi$_2$Se$_3$ with high charge-carrier density|E. K. de Vries,S. Pezzini,M. J. Meijer,N. Koirala,M. Salehi,J. Moon,S. Oh,S. Wiedmann,T. Banerjee###
(1120230, 1120233)
Coexistence of bulk and surface states probed by Shubnikov-de Haas oscillations in Bi2Se3 with high charge-carrier density.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 30, 'T', 3]

Bi2Se3
###Coexistence of bulk and surface states probed by Shubnikov-de Haas oscillations in Bi$_2$Se$_3$ with high charge-carrier density|E. K. de Vries,S. Pezzini,M. J. Meijer,N. Koirala,M. Salehi,J. Moon,S. Oh,S. Wiedmann,T. Banerjee###
(1120373, 1120376)
 To investigate these parallel conduction transportchannels, we studied Shubnikov-de Haas oscillations in Bi2Se3 thin films,in high magnetic fields up to 30 T so as to access channels with a lowermobility.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 30, 'T', 0]

Bi2Se3
###High-temperature quantum oscillations of the Hall resistance in bulk Bi$_2$Se$_3$|Marco Busch,Olivio Chiatti,Sergio Pezzini,Steffen Wiedmann,Jaime Sánchez-Barriga,Oliver Rader,Lada V. Yashina,Saskia F. Fischer###
(1120613, 1120616)
High-temperature quantum oscillations of the Hall resistance in bulk Bi2Se3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[192.0, 50, 'K', 4],[269.0, 3, 'D', 7],[272.0, 2, 'D', 7],[337.0, 2, 'D', 9]

HS
###High-temperature quantum oscillations of the Hall resistance in bulk Bi$_2$Se$_3$|Marco Busch,Olivio Chiatti,Sergio Pezzini,Steffen Wiedmann,Jaime Sánchez-Barriga,Oliver Rader,Lada V. Yashina,Saskia F. Fischer###
(1120630, 1120631)
 Helically spin-polarized Dirac fermions (HSD<missing VAR>F) in protected topologicalsurface states (T<missing VAR>SS) are of high interest as a new state of quantum matter.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[177.0, 50, 'K', 3],[254.0, 3, 'D', 6],[257.0, 2, 'D', 6],[322.0, 2, 'D', 8]

F
###High-temperature quantum oscillations of the Hall resistance in bulk Bi$_2$Se$_3$|Marco Busch,Olivio Chiatti,Sergio Pezzini,Steffen Wiedmann,Jaime Sánchez-Barriga,Oliver Rader,Lada V. Yashina,Saskia F. Fischer###
(1120633, 1120633)
 Helically spin-polarized Dirac fermions (HSD<missing VAR>F) in protected topologicalsurface states (T<missing VAR>SS) are of high interest as a new state of quantum matter.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 50, 'K', 3],[252.0, 3, 'D', 6],[255.0, 2, 'D', 6],[320.0, 2, 'D', 8]

S
###High-temperature quantum oscillations of the Hall resistance in bulk Bi$_2$Se$_3$|Marco Busch,Olivio Chiatti,Sergio Pezzini,Steffen Wiedmann,Jaime Sánchez-Barriga,Oliver Rader,Lada V. Yashina,Saskia F. Fischer###
(1120650, 1120650)
 Helically spin-polarized Dirac fermions (HSD<missing VAR>F) in protected topologicalsurface states (T<missing VAR>SS) are of high interest as a new state of quantum matter.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 50, 'K', 3],[235.0, 3, 'D', 6],[238.0, 2, 'D', 6],[303.0, 2, 'D', 8]

In
###High-temperature quantum oscillations of the Hall resistance in bulk Bi$_2$Se$_3$|Marco Busch,Olivio Chiatti,Sergio Pezzini,Steffen Wiedmann,Jaime Sánchez-Barriga,Oliver Rader,Lada V. Yashina,Saskia F. Fischer###
(1120676, 1120676)
 Inthree-dimensional (3D) materials with T<missing VAR>SS, electronic bulk states often maskthe transport properties of HSD<missing VAR>F.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 50, 'K', 2],[209.0, 3, 'D', 5],[212.0, 2, 'D', 5],[277.0, 2, 'D', 7]

SS
###High-temperature quantum oscillations of the Hall resistance in bulk Bi$_2$Se$_3$|Marco Busch,Olivio Chiatti,Sergio Pezzini,Steffen Wiedmann,Jaime Sánchez-Barriga,Oliver Rader,Lada V. Yashina,Saskia F. Fischer###
(1120693, 1120694)
 Inthree-dimensional (3D) materials with T<missing VAR>SS, electronic bulk states often maskthe transport properties of HSD<missing VAR>F.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 50, 'K', 2],[191.0, 3, 'D', 5],[194.0, 2, 'D', 5],[259.0, 2, 'D', 7]

HS
###High-temperature quantum oscillations of the Hall resistance in bulk Bi$_2$Se$_3$|Marco Busch,Olivio Chiatti,Sergio Pezzini,Steffen Wiedmann,Jaime Sánchez-Barriga,Oliver Rader,Lada V. Yashina,Saskia F. Fischer###
(1120716, 1120717)
 Inthree-dimensional (3D) materials with T<missing VAR>SS, electronic bulk states often maskthe transport properties of HSD<missing VAR>F.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 50, 'K', 2],[168.0, 3, 'D', 5],[171.0, 2, 'D', 5],[236.0, 2, 'D', 7]

F
###High-temperature quantum oscillations of the Hall resistance in bulk Bi$_2$Se$_3$|Marco Busch,Olivio Chiatti,Sergio Pezzini,Steffen Wiedmann,Jaime Sánchez-Barriga,Oliver Rader,Lada V. Yashina,Saskia F. Fischer###
(1120719, 1120719)
 Inthree-dimensional (3D) materials with T<missing VAR>SS, electronic bulk states often maskthe transport properties of HSD<missing VAR>F.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 50, 'K', 2],[166.0, 3, 'D', 5],[169.0, 2, 'D', 5],[234.0, 2, 'D', 7]

SS
###High-temperature quantum oscillations of the Hall resistance in bulk Bi$_2$Se$_3$|Marco Busch,Olivio Chiatti,Sergio Pezzini,Steffen Wiedmann,Jaime Sánchez-Barriga,Oliver Rader,Lada V. Yashina,Saskia F. Fischer###
(1120751, 1120752)
 Recently, the high-field Hall resistance andlow-field magnetoresistance indicate that the T<missing VAR>SS may coexist with a layeredtwo-dimensional electronic system (2DES).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 50, 'K', 1],[133.0, 3, 'D', 4],[136.0, 2, 'D', 4],[201.0, 2, 'D', 6]

S
###High-temperature quantum oscillations of the Hall resistance in bulk Bi$_2$Se$_3$|Marco Busch,Olivio Chiatti,Sergio Pezzini,Steffen Wiedmann,Jaime Sánchez-Barriga,Oliver Rader,Lada V. Yashina,Saskia F. Fischer###
(1120777, 1120777)
 Recently, the high-field Hall resistance andlow-field magnetoresistance indicate that the T<missing VAR>SS may coexist with a layeredtwo-dimensional electronic system (2DES).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 50, 'K', 1],[108.0, 3, 'D', 4],[111.0, 2, 'D', 4],[176.0, 2, 'D', 6]

Bi2Se3
###High-temperature quantum oscillations of the Hall resistance in bulk Bi$_2$Se$_3$|Marco Busch,Olivio Chiatti,Sergio Pezzini,Steffen Wiedmann,Jaime Sánchez-Barriga,Oliver Rader,Lada V. Yashina,Saskia F. Fischer###
(1120815, 1120818)
 Here, we demonstrate quantumoscillations of the Hall resistance at temperatures up to 50 K in bulkBi2Se3 with a high electron density n<missing VAR> of about 2!
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 50, 'K', 0],[67.0, 3, 'D', 3],[70.0, 2, 'D', 3],[135.0, 2, 'D', 5]

SS
###High-temperature quantum oscillations of the Hall resistance in bulk Bi$_2$Se$_3$|Marco Busch,Olivio Chiatti,Sergio Pezzini,Steffen Wiedmann,Jaime Sánchez-Barriga,Oliver Rader,Lada V. Yashina,Saskia F. Fischer###
(1120916, 1120917)
 Angular resolved photoemission spectroscopy proves the existence ofT<missing VAR>SS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 50, 'K', 4],[31.0, 3, 'D', 1],[28.0, 2, 'D', 1],[36.0, 2, 'D', 1]

Bi2Se3
###High-temperature quantum oscillations of the Hall resistance in bulk Bi$_2$Se$_3$|Marco Busch,Olivio Chiatti,Sergio Pezzini,Steffen Wiedmann,Jaime Sánchez-Barriga,Oliver Rader,Lada V. Yashina,Saskia F. Fischer###
(1120930, 1120933)
 We present a model for Bi2Se3 and suggest that the coexistence ofT<missing VAR>SS and 2D layered transport stabilizes the quantum oscillations of the Hallresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 50, 'K', 5],[45.0, 3, 'D', 2],[42.0, 2, 'D', 2],[20.0, 2, 'D', 0]

SS
###High-temperature quantum oscillations of the Hall resistance in bulk Bi$_2$Se$_3$|Marco Busch,Olivio Chiatti,Sergio Pezzini,Steffen Wiedmann,Jaime Sánchez-Barriga,Oliver Rader,Lada V. Yashina,Saskia F. Fischer###
(1120949, 1120950)
 We present a model for Bi2Se3 and suggest that the coexistence ofT<missing VAR>SS and 2D layered transport stabilizes the quantum oscillations of the Hallresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 50, 'K', 5],[64.0, 3, 'D', 2],[61.0, 2, 'D', 2],[3.0, 2, 'D', 0]

PbTe/SnTe
###Broken mirror symmetry tuned topological transport in PbTe/SnTe heterostructures|Feng Wei,Chieh-Wen Liu,Da Li,Chun-Yang Wang,Hong-Rui Zhang,Ji-rong Sun,Xuan P. A. Gao,Song Ma,Zhidong Zhang###
(1120999, 1121003)
Broken mirror symmetry tuned topological transport in PbTe/SnTe heterostructures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[191.0, 2150, '%', 3],[195.0, 14, 'T', 3],[198.0, 2, 'K', 3],[272.0, 100, 'K', 4]

In
###Broken mirror symmetry tuned topological transport in PbTe/SnTe heterostructures|Feng Wei,Chieh-Wen Liu,Da Li,Chun-Yang Wang,Hong-Rui Zhang,Ji-rong Sun,Xuan P. A. Gao,Song Ma,Zhidong Zhang###
(1121057, 1121057)
In topological crystalline insulators (T<missing VAR>CIs), crystal symmetry and topology ofelectronic bands intertwine to create topological surface states and thus theDirac gap can be modulated by symmetry breaking structural changes of lattice.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 2150, '%', 1],[141.0, 14, 'T', 1],[144.0, 2, 'K', 1],[218.0, 100, 'K', 2]

C
###Broken mirror symmetry tuned topological transport in PbTe/SnTe heterostructures|Feng Wei,Chieh-Wen Liu,Da Li,Chun-Yang Wang,Hong-Rui Zhang,Ji-rong Sun,Xuan P. A. Gao,Song Ma,Zhidong Zhang###
(1121067, 1121067)
In topological crystalline insulators (T<missing VAR>CIs), crystal symmetry and topology ofelectronic bands intertwine to create topological surface states and thus theDirac gap can be modulated by symmetry breaking structural changes of lattice.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 2150, '%', 1],[131.0, 14, 'T', 1],[134.0, 2, 'K', 1],[208.0, 100, 'K', 2]

SnTe
###Broken mirror symmetry tuned topological transport in PbTe/SnTe heterostructures|Feng Wei,Chieh-Wen Liu,Da Li,Chun-Yang Wang,Hong-Rui Zhang,Ji-rong Sun,Xuan P. A. Gao,Song Ma,Zhidong Zhang###
(1121157, 1121158)
By transport measurement on heterostructures composed of p<missing VAR>-type topologicalcrystalline insulator SnTe and n<missing VAR>-type conventional semiconductor PbTe, here weshow a giant linear magnetoresistance (up to 2150% under 14 T at 2 K) inducedby the Dirac Fermions at the PbTe/SnTe interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 2150, '%', 0],[40.0, 14, 'T', 0],[43.0, 2, 'K', 0],[117.0, 100, 'K', 1]

PbTe
###Broken mirror symmetry tuned topological transport in PbTe/SnTe heterostructures|Feng Wei,Chieh-Wen Liu,Da Li,Chun-Yang Wang,Hong-Rui Zhang,Ji-rong Sun,Xuan P. A. Gao,Song Ma,Zhidong Zhang###
(1121170, 1121171)
By transport measurement on heterostructures composed of p<missing VAR>-type topologicalcrystalline insulator SnTe and n<missing VAR>-type conventional semiconductor PbTe, here weshow a giant linear magnetoresistance (up to 2150% under 14 T at 2 K) inducedby the Dirac Fermions at the PbTe/SnTe interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 2150, '%', 0],[27.0, 14, 'T', 0],[30.0, 2, 'K', 0],[104.0, 100, 'K', 1]

PbTe/SnTe
###Broken mirror symmetry tuned topological transport in PbTe/SnTe heterostructures|Feng Wei,Chieh-Wen Liu,Da Li,Chun-Yang Wang,Hong-Rui Zhang,Ji-rong Sun,Xuan P. A. Gao,Song Ma,Zhidong Zhang###
(1121219, 1121223)
By transport measurement on heterostructures composed of p<missing VAR>-type topologicalcrystalline insulator SnTe and n<missing VAR>-type conventional semiconductor PbTe, here weshow a giant linear magnetoresistance (up to 2150% under 14 T at 2 K) inducedby the Dirac Fermions at the PbTe/SnTe interface.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[25.0, 2150, '%', 0],[21.0, 14, 'T', 0],[18.0, 2, 'K', 0],[52.0, 100, 'K', 1]

In
###Broken mirror symmetry tuned topological transport in PbTe/SnTe heterostructures|Feng Wei,Chieh-Wen Liu,Da Li,Chun-Yang Wang,Hong-Rui Zhang,Ji-rong Sun,Xuan P. A. Gao,Song Ma,Zhidong Zhang###
(1121228, 1121228)
 In contrast, PbTe/SnTesamples grown at elevated temperature exhibit a cubic-to-rhombohedralstructural phase transition of SnTe lattice below 100 K and weakantilocalization effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 2150, '%', 1],[30.0, 14, 'T', 1],[27.0, 2, 'K', 1],[47.0, 100, 'K', 0]

PbTe/SnTe
###Broken mirror symmetry tuned topological transport in PbTe/SnTe heterostructures|Feng Wei,Chieh-Wen Liu,Da Li,Chun-Yang Wang,Hong-Rui Zhang,Ji-rong Sun,Xuan P. A. Gao,Song Ma,Zhidong Zhang###
(1121233, 1121237)
 In contrast, PbTe/SnTesamples grown at elevated temperature exhibit a cubic-to-rhombohedralstructural phase transition of SnTe lattice below 100 K and weakantilocalization effect.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[39.0, 2150, '%', 1],[35.0, 14, 'T', 1],[32.0, 2, 'K', 1],[38.0, 100, 'K', 0]

SnTe
###Broken mirror symmetry tuned topological transport in PbTe/SnTe heterostructures|Feng Wei,Chieh-Wen Liu,Da Li,Chun-Yang Wang,Hong-Rui Zhang,Ji-rong Sun,Xuan P. A. Gao,Song Ma,Zhidong Zhang###
(1121269, 1121270)
 In contrast, PbTe/SnTesamples grown at elevated temperature exhibit a cubic-to-rhombohedralstructural phase transition of SnTe lattice below 100 K and weakantilocalization effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 2150, '%', 1],[71.0, 14, 'T', 1],[68.0, 2, 'K', 1],[5.0, 100, 'K', 0]

CI
###Broken mirror symmetry tuned topological transport in PbTe/SnTe heterostructures|Feng Wei,Chieh-Wen Liu,Da Li,Chun-Yang Wang,Hong-Rui Zhang,Ji-rong Sun,Xuan P. A. Gao,Song Ma,Zhidong Zhang###
(1121356, 1121357)
 Our work provides a promising application for futuremagneto-electronics and spintronics based on T<missing VAR>CI heterostructures.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 2150, '%', 3],[158.0, 14, 'T', 3],[155.0, 2, 'K', 3],[81.0, 100, 'K', 2]

In
###Vacuum-dressed cavity magnetotransport of a 2D electron gas|Nicola Bartolo,Cristiano Ciuti###
(1121500, 1121500)
 In the regime of high filling factors of theLandau levels, the envelope of the Shubnikov-de Haas oscillations is profoundlymodified and the resistivity can be increased or reduced depending on thesystem parameters.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 2, 'D', 3]

In
###Vacuum-dressed cavity magnetotransport of a 2D electron gas|Nicola Bartolo,Cristiano Ciuti###
(1121575, 1121575)
 In the limit of low magnetic fields, the resistivity alongthe cavity-mode polarization direction is enhanced in the ultrastronglight-matter coupling regime.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[194.0, 2, 'D', 4]

CrI3
###Spin direction controlled electronic band structure in two dimensional ferromagnetic CrI3|Peiheng Jiang,Lei Li,Zhaoliang Liao,Y. X. Zhao,Zhicheng Zhong###
(1121700, 1121702)
Spin direction controlled electronic band structure in two dimensional ferromagnetic CrI3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CrI3
###Spin direction controlled electronic band structure in two dimensional ferromagnetic CrI3|Peiheng Jiang,Lei Li,Zhaoliang Liao,Y. X. Zhao,Zhicheng Zhong###
(1121779, 1121781)
 Using the newly discovered two dimensional van der Waalsferromagnetic CrI3 as a prototypic material, we theoretically demonstrated agiant magneto band-structure (GMB) effect whereby a change of magnetizationdirection significantly modifies the electronic band structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Spin direction controlled electronic band structure in two dimensional ferromagnetic CrI3|Peiheng Jiang,Lei Li,Zhaoliang Liao,Y. X. Zhao,Zhicheng Zhong###
(1121812, 1121812)
 Using the newly discovered two dimensional van der Waalsferromagnetic CrI3 as a prototypic material, we theoretically demonstrated agiant magneto band-structure (GMB) effect whereby a change of magnetizationdirection significantly modifies the electronic band structure.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CrI3
###Spin direction controlled electronic band structure in two dimensional ferromagnetic CrI3|Peiheng Jiang,Lei Li,Zhaoliang Liao,Y. X. Zhao,Zhicheng Zhong###
(1121875, 1121877)
 Our densityfunctional theory calculations and model analysis reveal that rotating themagnetic moment of CrI3 from out-of-plane to in-plane causes adirect-to-indirect bandgap transition, inducing a magnetic field controlledphotoluminescence.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Spin direction controlled electronic band structure in two dimensional ferromagnetic CrI3|Peiheng Jiang,Lei Li,Zhaoliang Liao,Y. X. Zhao,Zhicheng Zhong###
(1122023, 1122023)
 Given that a variety of properties aredetermined by band structures, our predicted GMB effect in CrI3 opens a newparadigm for spintronics applications.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CrI3
###Spin direction controlled electronic band structure in two dimensional ferromagnetic CrI3|Peiheng Jiang,Lei Li,Zhaoliang Liao,Y. X. Zhao,Zhicheng Zhong###
(1122029, 1122031)
 Given that a variety of properties aredetermined by band structures, our predicted GMB effect in CrI3 opens a newparadigm for spintronics applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(1122060, 1122060)
L<missing VAR>10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[333.0, 25, '%', 6],[337.0, 60, '%', 6],[364.0, 350, 'C', 6]

Pd
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(1122062, 1122062)
L<missing VAR>10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[331.0, 25, '%', 6],[335.0, 60, '%', 6],[362.0, 350, 'C', 6]

Ru
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(1122074, 1122074)
L<missing VAR>10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[319.0, 25, '%', 6],[323.0, 60, '%', 6],[350.0, 350, 'C', 6]

P
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(1122111, 1122111)
 Magnetic materials that possess large bulk perpendicular magnetic anisotropy(PM<missing VAR>A) are essential for the development of magnetic tunnel junctions (MTJs)used in future spintronic memory and logic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[282.0, 25, '%', 5],[286.0, 60, '%', 5],[313.0, 350, 'C', 5]

P
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(1122224, 1122224)
 Here, we report a demonstration of a bulkperpendicular synthetic antiferromagnetic (P-SAFM) structure comprised of a(001) textured FePd/Ru/FePd trilayer with a face-centered-cubic (fcc) phase Ruspacer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 25, '%', 3],[173.0, 60, '%', 3],[200.0, 350, 'C', 3]

S
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(1122226, 1122226)
 Here, we report a demonstration of a bulkperpendicular synthetic antiferromagnetic (P-SAFM) structure comprised of a(001) textured FePd/Ru/FePd trilayer with a face-centered-cubic (fcc) phase Ruspacer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 25, '%', 3],[171.0, 60, '%', 3],[198.0, 350, 'C', 3]

F
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(1122228, 1122228)
 Here, we report a demonstration of a bulkperpendicular synthetic antiferromagnetic (P-SAFM) structure comprised of a(001) textured FePd/Ru/FePd trilayer with a face-centered-cubic (fcc) phase Ruspacer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 25, '%', 3],[169.0, 60, '%', 3],[196.0, 350, 'C', 3]

FePd/Ru/FePd
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(1122247, 1122253)
 Here, we report a demonstration of a bulkperpendicular synthetic antiferromagnetic (P-SAFM) structure comprised of a(001) textured FePd/Ru/FePd trilayer with a face-centered-cubic (fcc) phase Ruspacer.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[140.0, 25, '%', 3],[144.0, 60, '%', 3],[171.0, 350, 'C', 3]

Ru
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(1122273, 1122273)
 Here, we report a demonstration of a bulkperpendicular synthetic antiferromagnetic (P-SAFM) structure comprised of a(001) textured FePd/Ru/FePd trilayer with a face-centered-cubic (fcc) phase Ruspacer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 25, '%', 3],[124.0, 60, '%', 3],[151.0, 350, 'C', 3]

FePd
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(1122284, 1122285)
 The L<missing VAR>10 FePd P-SAFM<missing VAR> structure shows a large bulk PM<missing VAR>A (10.2 Merg/cc)and strong antiferromagnetic coupling (2.60 erg/cm2).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 25, '%', 2],[112.0, 60, '%', 2],[139.0, 350, 'C', 2]

P
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(1122287, 1122287)
 The L<missing VAR>10 FePd P-SAFM<missing VAR> structure shows a large bulk PM<missing VAR>A (10.2 Merg/cc)and strong antiferromagnetic coupling (2.60 erg/cm2).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 25, '%', 2],[110.0, 60, '%', 2],[137.0, 350, 'C', 2]

S
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(1122289, 1122289)
 The L<missing VAR>10 FePd P-SAFM<missing VAR> structure shows a large bulk PM<missing VAR>A (10.2 Merg/cc)and strong antiferromagnetic coupling (2.60 erg/cm2).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 25, '%', 2],[108.0, 60, '%', 2],[135.0, 350, 'C', 2]

F
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(1122291, 1122291)
 The L<missing VAR>10 FePd P-SAFM<missing VAR> structure shows a large bulk PM<missing VAR>A (10.2 Merg/cc)and strong antiferromagnetic coupling (2.60 erg/cm2).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 25, '%', 2],[106.0, 60, '%', 2],[133.0, 350, 'C', 2]

P
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(1122304, 1122304)
 The L<missing VAR>10 FePd P-SAFM<missing VAR> structure shows a large bulk PM<missing VAR>A (10.2 Merg/cc)and strong antiferromagnetic coupling (2.60 erg/cm2).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 25, '%', 2],[93.0, 60, '%', 2],[120.0, 350, 'C', 2]

P
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(1122347, 1122347)
 Full perpendicularmagnetic tunnel junctions (P-MTJs) with a L<missing VAR>10 FePd P-SAFM<missing VAR> layer are thenfabricated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 25, '%', 1],[50.0, 60, '%', 1],[77.0, 350, 'C', 1]

FePd
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(1122361, 1122362)
 Full perpendicularmagnetic tunnel junctions (P-MTJs) with a L<missing VAR>10 FePd P-SAFM<missing VAR> layer are thenfabricated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 25, '%', 1],[35.0, 60, '%', 1],[62.0, 350, 'C', 1]

P
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(1122364, 1122364)
 Full perpendicularmagnetic tunnel junctions (P-MTJs) with a L<missing VAR>10 FePd P-SAFM<missing VAR> layer are thenfabricated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 25, '%', 1],[33.0, 60, '%', 1],[60.0, 350, 'C', 1]

S
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(1122366, 1122366)
 Full perpendicularmagnetic tunnel junctions (P-MTJs) with a L<missing VAR>10 FePd P-SAFM<missing VAR> layer are thenfabricated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 25, '%', 1],[31.0, 60, '%', 1],[58.0, 350, 'C', 1]

F
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(1122368, 1122368)
 Full perpendicularmagnetic tunnel junctions (P-MTJs) with a L<missing VAR>10 FePd P-SAFM<missing VAR> layer are thenfabricated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 25, '%', 1],[29.0, 60, '%', 1],[56.0, 350, 'C', 1]

K
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(1122414, 1122414)
 Tunneling magnetoresistance ratios of up to 25% (60%) areobserved at room temperature (5K) after post-annealing at 350 C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 25, '%', 0],[17.0, 60, '%', 0],[10.0, 350, 'C', 0]

P
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(1122447, 1122447)
 Exhibitinghigh thermal stabilities and large Ku, the bulk P-MTJs with an L<missing VAR>10 FePd P-SAFM<missing VAR>layer could pave a way for next-generation ultrahigh-density andultra-low-energy spintronic applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 25, '%', 1],[50.0, 60, '%', 1],[23.0, 350, 'C', 1]

FePd
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(1122460, 1122461)
 Exhibitinghigh thermal stabilities and large Ku, the bulk P-MTJs with an L<missing VAR>10 FePd P-SAFM<missing VAR>layer could pave a way for next-generation ultrahigh-density andultra-low-energy spintronic applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 25, '%', 1],[63.0, 60, '%', 1],[36.0, 350, 'C', 1]

P
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(1122463, 1122463)
 Exhibitinghigh thermal stabilities and large Ku, the bulk P-MTJs with an L<missing VAR>10 FePd P-SAFM<missing VAR>layer could pave a way for next-generation ultrahigh-density andultra-low-energy spintronic applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 25, '%', 1],[66.0, 60, '%', 1],[39.0, 350, 'C', 1]

S
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(1122465, 1122465)
 Exhibitinghigh thermal stabilities and large Ku, the bulk P-MTJs with an L<missing VAR>10 FePd P-SAFM<missing VAR>layer could pave a way for next-generation ultrahigh-density andultra-low-energy spintronic applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 25, '%', 1],[68.0, 60, '%', 1],[41.0, 350, 'C', 1]

F
###L10 Fe-Pd Synthetic Antiferromagnet through an fcc Ru Spacer Utilized for Perpendicular Magnetic Tunnel Junctions|De-Lin Zhang,Congli Sun,Yang Lv,Karl B. Schliep,Zhengyang Zhao,Jun-Yang Chen,Paul M. Voyles,Jian-Ping Wang###
(1122467, 1122467)
 Exhibitinghigh thermal stabilities and large Ku, the bulk P-MTJs with an L<missing VAR>10 FePd P-SAFM<missing VAR>layer could pave a way for next-generation ultrahigh-density andultra-low-energy spintronic applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 25, '%', 1],[70.0, 60, '%', 1],[43.0, 350, 'C', 1]

TaP
###Anomalous Nernst effect and field-induced Lifshitz transition in Weyl semimetals TaP and TaAs|Federico Caglieris,Christoph Wuttke,Steffen Sykora,Vicky Süss,Chandra Shekhar,Claudia Felser,Bernd Büchner,Christian Hess###
(1122535, 1122536)
Anomalous Nernst effect and field-induced Lifshitz transition in Weyl semimetals TaP and TaAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TaAs
###Anomalous Nernst effect and field-induced Lifshitz transition in Weyl semimetals TaP and TaAs|Federico Caglieris,Christoph Wuttke,Steffen Sykora,Vicky Süss,Chandra Shekhar,Claudia Felser,Bernd Büchner,Christian Hess###
(1122540, 1122541)
Anomalous Nernst effect and field-induced Lifshitz transition in Weyl semimetals TaP and TaAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Anomalous Nernst effect and field-induced Lifshitz transition in Weyl semimetals TaP and TaAs|Federico Caglieris,Christoph Wuttke,Steffen Sykora,Vicky Süss,Chandra Shekhar,Claudia Felser,Bernd Büchner,Christian Hess###
(1122687, 1122687)
 Here weshow that the prototypical type-I Weyl semimetals TaP and TaAs possess a giantanomalous Nernst signal with a characteristic saturation plateau beyond acritical field which can be understood as a direct consequence of the finiteBerry curvature originating from the Weyl points.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TaP
###Anomalous Nernst effect and field-induced Lifshitz transition in Weyl semimetals TaP and TaAs|Federico Caglieris,Christoph Wuttke,Steffen Sykora,Vicky Süss,Chandra Shekhar,Claudia Felser,Bernd Büchner,Christian Hess###
(1122693, 1122694)
 Here weshow that the prototypical type-I Weyl semimetals TaP and TaAs possess a giantanomalous Nernst signal with a characteristic saturation plateau beyond acritical field which can be understood as a direct consequence of the finiteBerry curvature originating from the Weyl points.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TaAs
###Anomalous Nernst effect and field-induced Lifshitz transition in Weyl semimetals TaP and TaAs|Federico Caglieris,Christoph Wuttke,Steffen Sykora,Vicky Süss,Chandra Shekhar,Claudia Felser,Bernd Büchner,Christian Hess###
(1122698, 1122699)
 Here weshow that the prototypical type-I Weyl semimetals TaP and TaAs possess a giantanomalous Nernst signal with a characteristic saturation plateau beyond acritical field which can be understood as a direct consequence of the finiteBerry curvature originating from the Weyl points.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

DySb
###Extreme magnetoresistance and Shubnikov-de Haas oscillations in ferromagnetic DySb|D. D. Liang,Y. J. Wang,C. Y. Xi,W. L. Zhen,J. Yang,L. Pi,W. K. Zhu,C. J. Zhang###
(1123184, 1123185)
Extreme magnetoresistance and Shubnikov-de Haas oscillations in ferromagnetic DySb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 4, '%', 4],[113.0, 1.8, 'K', 4],[117.0, 38.7, 'T', 4]

Sb
###Extreme magnetoresistance and Shubnikov-de Haas oscillations in ferromagnetic DySb|D. D. Liang,Y. J. Wang,C. Y. Xi,W. L. Zhen,J. Yang,L. Pi,W. K. Zhu,C. J. Zhang###
(1123215, 1123215)
,DySb) under high magnetic field (i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 4, '%', 2],[83.0, 1.8, 'K', 2],[87.0, 38.7, 'T', 2]

DySb
###Extreme magnetoresistance and Shubnikov-de Haas oscillations in ferromagnetic DySb|D. D. Liang,Y. J. Wang,C. Y. Xi,W. L. Zhen,J. Yang,L. Pi,W. K. Zhu,C. J. Zhang###
(1123378, 1123379)
 Although a band inversion is found theoretically, suggesting thatDySb might be topologically nontrivial, it is deeply underneath the Fermilevel, which rules out a topological nature of the XMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 4, '%', 2],[80.0, 1.8, 'K', 2],[76.0, 38.7, 'T', 2]

InSe
###Magnetotransport and lateral confinement in an InSe van der Waals Heterostructure|Yongjin Lee,Riccardo Pisoni,Hiske Overweg,Marius Eich,Peter Rickhaus,Amalia Patanè,Zakhar R. Kudrynskyi,Zakhar. D. Kovalyuk,Roman Gorbachev,Kenji Watanabe,Takashi Taniguchi,Thomas Ihn,Klaus Ensslin###
(1123576, 1123577)
Magnetotransport and lateral confinement in an InSe van der Waals Heterostructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[280.0, 2, 'to', 6],[281.0, 5, 'meV', 6]

In
###Magnetotransport and lateral confinement in an InSe van der Waals Heterostructure|Yongjin Lee,Riccardo Pisoni,Hiske Overweg,Marius Eich,Peter Rickhaus,Amalia Patanè,Zakhar R. Kudrynskyi,Zakhar. D. Kovalyuk,Roman Gorbachev,Kenji Watanabe,Takashi Taniguchi,Thomas Ihn,Klaus Ensslin###
(1123588, 1123588)
 In the last six years, Indium selenide (InSe) has appeared as a new van derWaals heterostructure platform which has been extensively studied due to itsunique electronic and optical properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[269.0, 2, 'to', 5],[270.0, 5, 'meV', 5]

(InSe)
###Magnetotransport and lateral confinement in an InSe van der Waals Heterostructure|Yongjin Lee,Riccardo Pisoni,Hiske Overweg,Marius Eich,Peter Rickhaus,Amalia Patanè,Zakhar R. Kudrynskyi,Zakhar. D. Kovalyuk,Roman Gorbachev,Kenji Watanabe,Takashi Taniguchi,Thomas Ihn,Klaus Ensslin###
(1123603, 1123606)
 In the last six years, Indium selenide (InSe) has appeared as a new van derWaals heterostructure platform which has been extensively studied due to itsunique electronic and optical properties.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[251.0, 2, 'to', 5],[252.0, 5, 'meV', 5]

Cs
###Magnetotransport and lateral confinement in an InSe van der Waals Heterostructure|Yongjin Lee,Riccardo Pisoni,Hiske Overweg,Marius Eich,Peter Rickhaus,Amalia Patanè,Zakhar R. Kudrynskyi,Zakhar. D. Kovalyuk,Roman Gorbachev,Kenji Watanabe,Takashi Taniguchi,Thomas Ihn,Klaus Ensslin###
(1123672, 1123672)
 Such as transition metaldichalcogenides (TMDCs), the considerable bandgap and high electron mobilitycan provide a potential optoelectronic application.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[185.0, 2, 'to', 4],[186.0, 5, 'meV', 4]

InSe
###Magnetotransport and lateral confinement in an InSe van der Waals Heterostructure|Yongjin Lee,Riccardo Pisoni,Hiske Overweg,Marius Eich,Peter Rickhaus,Amalia Patanè,Zakhar R. Kudrynskyi,Zakhar. D. Kovalyuk,Roman Gorbachev,Kenji Watanabe,Takashi Taniguchi,Thomas Ihn,Klaus Ensslin###
(1123727, 1123728)
 Here we presentlow-temperature transport measurements on a few-layer InSe van der Waalsheterostructure with graphene-gated contacts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 2, 'to', 3],[130.0, 5, 'meV', 3]

HoBi
###Interplay of Magnetism and Transport in HoBi|H. -Y. Yang,J. Gaudet,A. A. Aczel,D. E. Graf,P. Blaha,B. D. Gaulin,Fazel Tafti###
(1123919, 1123920)
Interplay of Magnetism and Transport in HoBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[174.0, 2, 'K', 3],[181.0, 2.3, 'T', 3],[198.0, 2.3, 'T', 4]

HoBi
###Interplay of Magnetism and Transport in HoBi|H. -Y. Yang,J. Gaudet,A. A. Aczel,D. E. Graf,P. Blaha,B. D. Gaulin,Fazel Tafti###
(1123947, 1123948)
 We report the observation of an extreme magnetoresistance (XMR) in HoBi witha large magnetic moment from Ho f<missing VAR>-electrons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 2, 'K', 2],[153.0, 2.3, 'T', 2],[170.0, 2.3, 'T', 3]

Ho
###Interplay of Magnetism and Transport in HoBi|H. -Y. Yang,J. Gaudet,A. A. Aczel,D. E. Graf,P. Blaha,B. D. Gaulin,Fazel Tafti###
(1123963, 1123963)
 We report the observation of an extreme magnetoresistance (XMR) in HoBi witha large magnetic moment from Ho f<missing VAR>-electrons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 2, 'K', 2],[138.0, 2.3, 'T', 2],[155.0, 2.3, 'T', 3]

HoBi
###Interplay of Magnetism and Transport in HoBi|H. -Y. Yang,J. Gaudet,A. A. Aczel,D. E. Graf,P. Blaha,B. D. Gaulin,Fazel Tafti###
(1124015, 1124016)
 Neutron scattering is used todetermine the magnetic wave vectors across several metamagnetic (MM)transitions on the phase diagram of HoBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 2, 'K', 1],[85.0, 2.3, 'T', 1],[102.0, 2.3, 'T', 2]

HoBi
###Interplay of Magnetism and Transport in HoBi|H. -Y. Yang,J. Gaudet,A. A. Aczel,D. E. Graf,P. Blaha,B. D. Gaulin,Fazel Tafti###
(1124045, 1124046)
 Unlike other magnetic rare-earthmonopnictides, the field dependence of resistivity in HoBi is non-monotonic andreveals clear signatures of every metamagnetic transition in thelow-temperature and low-field regime, at T<missing VAR> < 2 K and H < 2.3 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 2, 'K', 0],[55.0, 2.3, 'T', 0],[72.0, 2.3, 'T', 1]

H
###Interplay of Magnetism and Transport in HoBi|H. -Y. Yang,J. Gaudet,A. A. Aczel,D. E. Graf,P. Blaha,B. D. Gaulin,Fazel Tafti###
(1124098, 1124098)
 Unlike other magnetic rare-earthmonopnictides, the field dependence of resistivity in HoBi is non-monotonic andreveals clear signatures of every metamagnetic transition in thelow-temperature and low-field regime, at T<missing VAR> < 2 K and H < 2.3 T.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 2, 'K', 0],[3.0, 2.3, 'T', 0],[20.0, 2.3, 'T', 1]

H
###Interplay of Magnetism and Transport in HoBi|H. -Y. Yang,J. Gaudet,A. A. Aczel,D. E. Graf,P. Blaha,B. D. Gaulin,Fazel Tafti###
(1124115, 1124115)
 The XMR appearsat H > 2.3 T after all the metamagnetic transitions are complete and the systemis spin-polarized by the external magnetic field.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 2, 'K', 1],[14.0, 2.3, 'T', 1],[3.0, 2.3, 'T', 0]

HoBi
###Interplay of Magnetism and Transport in HoBi|H. -Y. Yang,J. Gaudet,A. A. Aczel,D. E. Graf,P. Blaha,B. D. Gaulin,Fazel Tafti###
(1124196, 1124197)
 The existence of an onsetfield for XMR and the intimate connection between magnetism and transport inHoBi are unprecedented among the magnetic rare-earth monopnictides.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 2, 'K', 2],[95.0, 2.3, 'T', 2],[78.0, 2.3, 'T', 1]

HoBi
###Interplay of Magnetism and Transport in HoBi|H. -Y. Yang,J. Gaudet,A. A. Aczel,D. E. Graf,P. Blaha,B. D. Gaulin,Fazel Tafti###
(1124220, 1124221)
 Therefore,HoBi provides a unique opportunity to understand the electrical transport inmagnetic XMR semimetals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 2, 'K', 3],[119.0, 2.3, 'T', 3],[102.0, 2.3, 'T', 2]

HoSb
###Unusual magnetotransport in holmium monoantimonide|Yi-Yan Wang,Lin-Lin Sun,Sheng Xu,Yuan Su,Tian-Long Xia###
(1124284, 1124285)
 We report the magnetotransport properties of HoSb, a semimetal withantiferromagnetic ground state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HoSb
###Unusual magnetotransport in holmium monoantimonide|Yi-Yan Wang,Lin-Lin Sun,Sheng Xu,Yuan Su,Tian-Long Xia###
(1124302, 1124303)
 HoSb shows extremely large magnetoresistance(XMR) and Shubnikov-de Haas (SdH) oscillation at low temperature and highmagnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Unusual magnetotransport in holmium monoantimonide|Yi-Yan Wang,Lin-Lin Sun,Sheng Xu,Yuan Su,Tian-Long Xia###
(1124330, 1124330)
 HoSb shows extremely large magnetoresistance(XMR) and Shubnikov-de Haas (SdH) oscillation at low temperature and highmagnetic field.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(B)
###Unusual magnetotransport in holmium monoantimonide|Yi-Yan Wang,Lin-Lin Sun,Sheng Xu,Yuan Su,Tian-Long Xia###
(1124376, 1124378)
 Different from previous reports in other rare earthmonopnictides, kinks in rho(B) and rhoxy(B) curves and the fielddependent resistivity plateau are observed in HoSb, which result from themagnetic phase transitions.
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(B)
###Unusual magnetotransport in holmium monoantimonide|Yi-Yan Wang,Lin-Lin Sun,Sheng Xu,Yuan Su,Tian-Long Xia###
(1124384, 1124386)
 Different from previous reports in other rare earthmonopnictides, kinks in rho(B) and rhoxy(B) curves and the fielddependent resistivity plateau are observed in HoSb, which result from themagnetic phase transitions.
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HoSb
###Unusual magnetotransport in holmium monoantimonide|Yi-Yan Wang,Lin-Lin Sun,Sheng Xu,Yuan Su,Tian-Long Xia###
(1124409, 1124410)
 Different from previous reports in other rare earthmonopnictides, kinks in rho(B) and rhoxy(B) curves and the fielddependent resistivity plateau are observed in HoSb, which result from themagnetic phase transitions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Unusual magnetotransport in holmium monoantimonide|Yi-Yan Wang,Lin-Lin Sun,Sheng Xu,Yuan Su,Tian-Long Xia###
(1124444, 1124444)
 The fast Fourier transform analysis of the SdHoscillation reveals the split of Fermi surfaces induced by the nonsymmetricspin-orbit interaction.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Unusual magnetotransport in holmium monoantimonide|Yi-Yan Wang,Lin-Lin Sun,Sheng Xu,Yuan Su,Tian-Long Xia###
(1124488, 1124488)
 The Berry phase extracted from SdH oscillationindicates the possible nontrivial electronic structure of HoSb in the presenceof magnetic field.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HoSb
###Unusual magnetotransport in holmium monoantimonide|Yi-Yan Wang,Lin-Lin Sun,Sheng Xu,Yuan Su,Tian-Long Xia###
(1124507, 1124508)
 The Berry phase extracted from SdH oscillationindicates the possible nontrivial electronic structure of HoSb in the presenceof magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnNi
###Antiferromagnetic MnNi tips for spin-polarized scanning probe microscopy|P. R. Forrester,T. Bilgeri,F. Patthey,H. Brune,F. D. Natterer###
(1124570, 1124571)
Antiferromagnetic MnNi tips for spin-polarized scanning probe microscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SP
###Antiferromagnetic MnNi tips for spin-polarized scanning probe microscopy|P. R. Forrester,T. Bilgeri,F. Patthey,H. Brune,F. D. Natterer###
(1124599, 1124600)
 Spin-polarized scanning tunneling microscopy (SP-STM) measures tunnelmagnetoresistance (TMR) with atomic resolution.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Antiferromagnetic MnNi tips for spin-polarized scanning probe microscopy|P. R. Forrester,T. Bilgeri,F. Patthey,H. Brune,F. D. Natterer###
(1124602, 1124602)
 Spin-polarized scanning tunneling microscopy (SP-STM) measures tunnelmagnetoresistance (TMR) with atomic resolution.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SP
###Antiferromagnetic MnNi tips for spin-polarized scanning probe microscopy|P. R. Forrester,T. Bilgeri,F. Patthey,H. Brune,F. D. Natterer###
(1124638, 1124639)
 While various methods forachieving SP probes have been developed, each is limited with respect tofabrication, performance, and allowed operating conditions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Antiferromagnetic MnNi tips for spin-polarized scanning probe microscopy|P. R. Forrester,T. Bilgeri,F. Patthey,H. Brune,F. D. Natterer###
(1124678, 1124678)
 In this study, wepresent the fabrication and use of SP-STM tips made from commercially availableantiferromagnetic rmMn88Ni12 foil.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SP
###Antiferromagnetic MnNi tips for spin-polarized scanning probe microscopy|P. R. Forrester,T. Bilgeri,F. Patthey,H. Brune,F. D. Natterer###
(1124700, 1124701)
 In this study, wepresent the fabrication and use of SP-STM tips made from commercially availableantiferromagnetic rmMn88Ni12 foil.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Antiferromagnetic MnNi tips for spin-polarized scanning probe microscopy|P. R. Forrester,T. Bilgeri,F. Patthey,H. Brune,F. D. Natterer###
(1124703, 1124703)
 In this study, wepresent the fabrication and use of SP-STM tips made from commercially availableantiferromagnetic rmMn88Ni12 foil.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn88Ni12
###Antiferromagnetic MnNi tips for spin-polarized scanning probe microscopy|P. R. Forrester,T. Bilgeri,F. Patthey,H. Brune,F. D. Natterer###
(1124721, 1124724)
 In this study, wepresent the fabrication and use of SP-STM tips made from commercially availableantiferromagnetic rmMn88Ni12 foil.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.88,0,0,0.12,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SP
###Antiferromagnetic MnNi tips for spin-polarized scanning probe microscopy|P. R. Forrester,T. Bilgeri,F. Patthey,H. Brune,F. D. Natterer###
(1124737, 1124738)
 The tips are intrinsically SP,which is attractive for exploring magnetic phenomena in the zero field limit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Antiferromagnetic MnNi tips for spin-polarized scanning probe microscopy|P. R. Forrester,T. Bilgeri,F. Patthey,H. Brune,F. D. Natterer###
(1124798, 1124798)
 Webenchmark the conventional STM and spectroscopic performance of our tips anddemonstrate their spin sensitivity by measuring the two-state switching ofholmium single atom magnets on MgO/Ag(100).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Taming the magnetoresistance anomaly in graphite|B. C. Camargo,W. Escoffier###
(1124880, 1124880)
 At low temperatures, graphite presents a magnetoresistance anomaly whichmanifests as a transition to a high-resistance state (HR<missing VAR>S) above a certaincritical magnetic field textBtextc<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Taming the magnetoresistance anomaly in graphite|B. C. Camargo,W. Escoffier###
(1124919, 1124919)
 At low temperatures, graphite presents a magnetoresistance anomaly whichmanifests as a transition to a high-resistance state (HR<missing VAR>S) above a certaincritical magnetic field textBtextc<missing VAR>.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Taming the magnetoresistance anomaly in graphite|B. C. Camargo,W. Escoffier###
(1124921, 1124921)
 At low temperatures, graphite presents a magnetoresistance anomaly whichmanifests as a transition to a high-resistance state (HR<missing VAR>S) above a certaincritical magnetic field textBtextc<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Taming the magnetoresistance anomaly in graphite|B. C. Camargo,W. Escoffier###
(1124938, 1124938)
 At low temperatures, graphite presents a magnetoresistance anomaly whichmanifests as a transition to a high-resistance state (HR<missing VAR>S) above a certaincritical magnetic field textBtextc<missing VAR>.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Taming the magnetoresistance anomaly in graphite|B. C. Camargo,W. Escoffier###
(1124945, 1124945)
 Such HR<missing VAR>S is currently attributedto a c<missing VAR>-axis charge-density-wave taking place only when the lowest Landau levelis populated.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Taming the magnetoresistance anomaly in graphite|B. C. Camargo,W. Escoffier###
(1124947, 1124947)
 Such HR<missing VAR>S is currently attributedto a c<missing VAR>-axis charge-density-wave taking place only when the lowest Landau levelis populated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CN
###Taming the magnetoresistance anomaly in graphite|B. C. Camargo,W. Escoffier###
(1125024, 1125025)
 By controlling the charge carrier concentration of a gated samplethrough its charge neutrality level (CNL), we were able to experimentallymodulate the HR<missing VAR>S in graphite for the first time.
Featurization terminated normally.
0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Taming the magnetoresistance anomaly in graphite|B. C. Camargo,W. Escoffier###
(1125045, 1125045)
 By controlling the charge carrier concentration of a gated samplethrough its charge neutrality level (CNL), we were able to experimentallymodulate the HR<missing VAR>S in graphite for the first time.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Taming the magnetoresistance anomaly in graphite|B. C. Camargo,W. Escoffier###
(1125047, 1125047)
 By controlling the charge carrier concentration of a gated samplethrough its charge neutrality level (CNL), we were able to experimentallymodulate the HR<missing VAR>S in graphite for the first time.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Taming the magnetoresistance anomaly in graphite|B. C. Camargo,W. Escoffier###
(1125070, 1125070)
 We demonstrate that the HR<missing VAR>S istriggered both when electrons and holes are the majority carriers but isattenuated near the CNL<missing VAR>.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Taming the magnetoresistance anomaly in graphite|B. C. Camargo,W. Escoffier###
(1125072, 1125072)
 We demonstrate that the HR<missing VAR>S istriggered both when electrons and holes are the majority carriers but isattenuated near the CNL<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CN
###Taming the magnetoresistance anomaly in graphite|B. C. Camargo,W. Escoffier###
(1125108, 1125109)
 We demonstrate that the HR<missing VAR>S istriggered both when electrons and holes are the majority carriers but isattenuated near the CNL<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Taming the magnetoresistance anomaly in graphite|B. C. Camargo,W. Escoffier###
(1125133, 1125133)
 Taking screening into account, our results indicatethat the HR<missing VAR>S possess a strong in-plane component and can occur below thequantum limit, being at odds with the current understanding of the phenomenon.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Taming the magnetoresistance anomaly in graphite|B. C. Camargo,W. Escoffier###
(1125135, 1125135)
 Taking screening into account, our results indicatethat the HR<missing VAR>S possess a strong in-plane component and can occur below thequantum limit, being at odds with the current understanding of the phenomenon.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Taming the magnetoresistance anomaly in graphite|B. C. Camargo,W. Escoffier###
(1125207, 1125207)
We also report the effect of sample thickness on the HR<missing VAR>S.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Taming the magnetoresistance anomaly in graphite|B. C. Camargo,W. Escoffier###
(1125209, 1125209)
We also report the effect of sample thickness on the HR<missing VAR>S.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HgSe
###Nontrivial topology of bulk HgSe from the study of cyclotron effective mass, electron mobility and phase shift of Shubnikov-de Haas oscillations|S. B. Bobin,A. T. Lonchakov,V. V. Deryushkin,V. N. Neverov###
(1125228, 1125229)
Nontrivial topology of bulk HgSe from the study of cyclotron effective mass, electron mobility and phase shift of Shubnikov-de Haas oscillations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[248.0, -3, ',', 3]

In
###Nontrivial topology of bulk HgSe from the study of cyclotron effective mass, electron mobility and phase shift of Shubnikov-de Haas oscillations|S. B. Bobin,A. T. Lonchakov,V. V. Deryushkin,V. N. Neverov###
(1125267, 1125267)
 In this paper, the authors report the results of an experimental study ofeffective mass, electron mobility and phase shift of Shubnikov de Haasoscillations of transverse magnetoresistance in an extended electronconcentration region from 8.81015 cm-3 to 4.31018 cm-3 in single crystalsof mercury selenide.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[210.0, -3, ',', 2]

HgSe
###Nontrivial topology of bulk HgSe from the study of cyclotron effective mass, electron mobility and phase shift of Shubnikov-de Haas oscillations|S. B. Bobin,A. T. Lonchakov,V. V. Deryushkin,V. N. Neverov###
(1125399, 1125400)
 The revealed features confirm the existence of a Weylsemimetal phase in HgSe at low electron density, which has been indicated byprevious magnetotransport studies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, -3, ',', 1]

HgSe
###Nontrivial topology of bulk HgSe from the study of cyclotron effective mass, electron mobility and phase shift of Shubnikov-de Haas oscillations|S. B. Bobin,A. T. Lonchakov,V. V. Deryushkin,V. N. Neverov###
(1125508, 1125509)
 However, the most significant result is thediscovery of an abrupt change of Berry phase of Pi at electron concentration21018 cm-3, which we explain in terms of a manifestation of topologicalLifshitz transition in HgSe that occurs by tuning Fermi energy via doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, -3, ',', 0]

B
###Discrete Scale Invariance in Topological Semimetals|Haiwen Liu,Hua Jiang,Ziqiang Wang,Robert Joynt,X. C. Xie###
(1125773, 1125773)
 It is observed when such amaterial is placed in very strong magnetic field B there are oscillations inthe magnetoresistivity somewhat similar to Shubnikov-de Haas oscillations butwith a periodicity in ln B rather than 1/B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Discrete Scale Invariance in Topological Semimetals|Haiwen Liu,Hua Jiang,Ziqiang Wang,Robert Joynt,X. C. Xie###
(1125815, 1125815)
 It is observed when such amaterial is placed in very strong magnetic field B there are oscillations inthe magnetoresistivity somewhat similar to Shubnikov-de Haas oscillations butwith a periodicity in ln B rather than 1/B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Discrete Scale Invariance in Topological Semimetals|Haiwen Liu,Hua Jiang,Ziqiang Wang,Robert Joynt,X. C. Xie###
(1125823, 1125823)
 It is observed when such amaterial is placed in very strong magnetic field B there are oscillations inthe magnetoresistivity somewhat similar to Shubnikov-de Haas oscillations butwith a periodicity in ln B rather than 1/B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZrTe5
###Discrete Scale Invariance in Topological Semimetals|Haiwen Liu,Hua Jiang,Ziqiang Wang,Robert Joynt,X. C. Xie###
(1125871, 1125873)
 The oscillations havenow been seen in three topological semimetals ZrTe5, TaAs, and Bi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TaAs
###Discrete Scale Invariance in Topological Semimetals|Haiwen Liu,Hua Jiang,Ziqiang Wang,Robert Joynt,X. C. Xie###
(1125876, 1125877)
 The oscillations havenow been seen in three topological semimetals ZrTe5, TaAs, and Bi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi
###Discrete Scale Invariance in Topological Semimetals|Haiwen Liu,Hua Jiang,Ziqiang Wang,Robert Joynt,X. C. Xie###
(1125882, 1125882)
 The oscillations havenow been seen in three topological semimetals ZrTe5, TaAs, and Bi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Double carrier transport in electron doped region in black phosphorus FET|Kohei Hirose,Toshihito Osada,Kazuhito Uchida,Toshihiro Taen,Kenji Watanabe,Takashi Taniguchi,Yuichi Akahama###
(1126228, 1126228)
Double carrier transport in electron doped region in black phosphorus FET.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 15, 'nm', 2],[124.0, 5300, 'cm', 3],[130.0, 5400, 'cm', 3],[136.0, 4.2, 'K', 3]

(BP)
###Double carrier transport in electron doped region in black phosphorus FET|Kohei Hirose,Toshihito Osada,Kazuhito Uchida,Toshihiro Taen,Kenji Watanabe,Takashi Taniguchi,Yuichi Akahama###
(1126258, 1126261)
 The double carrier transport has been observed in thin film black phosphorus(BP) field effect transistor (FET) devices in highly electron doped region.
Featurization successful!
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 15, 'nm', 1],[91.0, 5300, 'cm', 2],[97.0, 5400, 'cm', 2],[103.0, 4.2, 'K', 2]

F
###Double carrier transport in electron doped region in black phosphorus FET|Kohei Hirose,Toshihito Osada,Kazuhito Uchida,Toshihiro Taen,Kenji Watanabe,Takashi Taniguchi,Yuichi Akahama###
(1126270, 1126270)
 The double carrier transport has been observed in thin film black phosphorus(BP) field effect transistor (FET) devices in highly electron doped region.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 15, 'nm', 1],[82.0, 5300, 'cm', 2],[88.0, 5400, 'cm', 2],[94.0, 4.2, 'K', 2]

BP
###Double carrier transport in electron doped region in black phosphorus FET|Kohei Hirose,Toshihito Osada,Kazuhito Uchida,Toshihiro Taen,Kenji Watanabe,Takashi Taniguchi,Yuichi Akahama###
(1126288, 1126289)
 BPthin films with typical thickness of 15 nm were encapsulated by hexagonal boronnitride (h<missing VAR>-BN) thin films to avoid degradation by air exposure.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 15, 'nm', 0],[63.0, 5300, 'cm', 1],[69.0, 5400, 'cm', 1],[75.0, 4.2, 'K', 1]

N
###Double carrier transport in electron doped region in black phosphorus FET|Kohei Hirose,Toshihito Osada,Kazuhito Uchida,Toshihiro Taen,Kenji Watanabe,Takashi Taniguchi,Yuichi Akahama###
(1126322, 1126322)
 BPthin films with typical thickness of 15 nm were encapsulated by hexagonal boronnitride (h<missing VAR>-BN) thin films to avoid degradation by air exposure.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 15, 'nm', 0],[30.0, 5300, 'cm', 1],[36.0, 5400, 'cm', 1],[42.0, 4.2, 'K', 1]

In
###Double carrier transport in electron doped region in black phosphorus FET|Kohei Hirose,Toshihito Osada,Kazuhito Uchida,Toshihiro Taen,Kenji Watanabe,Takashi Taniguchi,Yuichi Akahama###
(1126418, 1126418)
In addition, at gate voltages above the shoulder, the magnetoresistance changesto positive, and there appears an additional slow Shubnikov-de Haasoscillation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 15, 'nm', 3],[66.0, 5300, 'cm', 2],[60.0, 5400, 'cm', 2],[54.0, 4.2, 'K', 2]

Sr3PbO
###Magnetotransport in Sr3PbO antiperovskite with three-dimensional massive Dirac electrons|S. Suetsugu,K. Hayama,A. W. Rost,J. Nuss,C. Mühle,J. Kim,K. Kitagawa,H. Takagi###
(1126525, 1126528)
Magnetotransport in Sr3PbO antiperovskite with three-dimensional massive Dirac electrons.
Featurization terminated normally.
0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 3, 'D', 2],[225.0, 3, 'D', 5]

Sr3PbO
###Magnetotransport in Sr3PbO antiperovskite with three-dimensional massive Dirac electrons|S. Suetsugu,K. Hayama,A. W. Rost,J. Nuss,C. Mühle,J. Kim,K. Kitagawa,H. Takagi###
(1126584, 1126587)
 The magnetotransport properties of cubic rm Sr3PbOantiperovskite, theoretically proposed to be a 3D massive Dirac electronsystem, are studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 3, 'D', 0],[166.0, 3, 'D', 3]

(B)
###Magnetotransport in Sr3PbO antiperovskite with three-dimensional massive Dirac electrons|S. Suetsugu,K. Hayama,A. W. Rost,J. Nuss,C. Mühle,J. Kim,K. Kitagawa,H. Takagi###
(1126705, 1126707)
 The magnetoresistance Deltarhoxx(B) is linear inmagnetic field B with the magnitude independent of temperature.
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 3, 'D', 2],[46.0, 3, 'D', 1]

B
###Magnetotransport in Sr3PbO antiperovskite with three-dimensional massive Dirac electrons|S. Suetsugu,K. Hayama,A. W. Rost,J. Nuss,C. Mühle,J. Kim,K. Kitagawa,H. Takagi###
(1126720, 1126720)
 The magnetoresistance Deltarhoxx(B) is linear inmagnetic field B with the magnitude independent of temperature.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 3, 'D', 2],[33.0, 3, 'D', 1]

Sr3PbO
###Magnetotransport in Sr3PbO antiperovskite with three-dimensional massive Dirac electrons|S. Suetsugu,K. Hayama,A. W. Rost,J. Nuss,C. Mühle,J. Kim,K. Kitagawa,H. Takagi###
(1126766, 1126769)
 These resultsare fully consistent with the presence of 3D massive Dirac electrons in rmSr3PbO.
Featurization terminated normally.
0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 3, 'D', 3],[13.0, 3, 'D', 0]

Sr3PbO
###Magnetotransport in Sr3PbO antiperovskite with three-dimensional massive Dirac electrons|S. Suetsugu,K. Hayama,A. W. Rost,J. Nuss,C. Mühle,J. Kim,K. Kitagawa,H. Takagi###
(1126802, 1126805)
 The chemical flexibility of the antiperovskites and our findingsin the family member, rm Sr3PbO, point to their potential as a modelsystem in which to explore exotic topological phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[200.0, 3, 'D', 4],[49.0, 3, 'D', 1]

II
###Non-topological Origin of the Planar Hall Effect in Type-II Dirac Semimetal NiTe2|Qianqian Liu,Bo Chen,Boyuan Wei,Shuai Zhang,Minhao Zhang,Faji Xie,Muhammad Naveed,Fucong Fei,Baigen Wang,Fengqi Song###
(1126868, 1126869)
Non-topological Origin of the Planar Hall Effect in Type-II Dirac Semimetal NiTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiTe2
###Non-topological Origin of the Planar Hall Effect in Type-II Dirac Semimetal NiTe2|Qianqian Liu,Bo Chen,Boyuan Wei,Shuai Zhang,Minhao Zhang,Faji Xie,Muhammad Naveed,Fucong Fei,Baigen Wang,Fengqi Song###
(1126875, 1126877)
Non-topological Origin of the Planar Hall Effect in Type-II Dirac Semimetal NiTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PH
###Non-topological Origin of the Planar Hall Effect in Type-II Dirac Semimetal NiTe2|Qianqian Liu,Bo Chen,Boyuan Wei,Shuai Zhang,Minhao Zhang,Faji Xie,Muhammad Naveed,Fucong Fei,Baigen Wang,Fengqi Song###
(1126991, 1126992)
Recently, a new phenomenon named planer Hall effect (PHE) is considered to beanother indication of chiral anomaly which has been observed in manytopological semimetals.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PH
###Non-topological Origin of the Planar Hall Effect in Type-II Dirac Semimetal NiTe2|Qianqian Liu,Bo Chen,Boyuan Wei,Shuai Zhang,Minhao Zhang,Faji Xie,Muhammad Naveed,Fucong Fei,Baigen Wang,Fengqi Song###
(1127052, 1127053)
 However, it still remains a question that is the PHE<missing VAR>only attributed to chiral anomaly?
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PH
###Non-topological Origin of the Planar Hall Effect in Type-II Dirac Semimetal NiTe2|Qianqian Liu,Bo Chen,Boyuan Wei,Shuai Zhang,Minhao Zhang,Faji Xie,Muhammad Naveed,Fucong Fei,Baigen Wang,Fengqi Song###
(1127076, 1127077)
 Here we demonstrate the PHE<missing VAR> in anew-discovered type-II Dirac semimetal NiTe2 by low temperature transport.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Non-topological Origin of the Planar Hall Effect in Type-II Dirac Semimetal NiTe2|Qianqian Liu,Bo Chen,Boyuan Wei,Shuai Zhang,Minhao Zhang,Faji Xie,Muhammad Naveed,Fucong Fei,Baigen Wang,Fengqi Song###
(1127091, 1127092)
 Here we demonstrate the PHE<missing VAR> in anew-discovered type-II Dirac semimetal NiTe2 by low temperature transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiTe2
###Non-topological Origin of the Planar Hall Effect in Type-II Dirac Semimetal NiTe2|Qianqian Liu,Bo Chen,Boyuan Wei,Shuai Zhang,Minhao Zhang,Faji Xie,Muhammad Naveed,Fucong Fei,Baigen Wang,Fengqi Song###
(1127098, 1127100)
 Here we demonstrate the PHE<missing VAR> in anew-discovered type-II Dirac semimetal NiTe2 by low temperature transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PH
###Non-topological Origin of the Planar Hall Effect in Type-II Dirac Semimetal NiTe2|Qianqian Liu,Bo Chen,Boyuan Wei,Shuai Zhang,Minhao Zhang,Faji Xie,Muhammad Naveed,Fucong Fei,Baigen Wang,Fengqi Song###
(1127130, 1127131)
However, after detailed analysis, we conclude that the PHE<missing VAR> results from thetrivial orbital magnetoresistance.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PH
###Non-topological Origin of the Planar Hall Effect in Type-II Dirac Semimetal NiTe2|Qianqian Liu,Bo Chen,Boyuan Wei,Shuai Zhang,Minhao Zhang,Faji Xie,Muhammad Naveed,Fucong Fei,Baigen Wang,Fengqi Song###
(1127156, 1127157)
 This work reveals that PHE<missing VAR> is not asufficient condition of chiral anomaly and one need to take special care ofother non-topological contribution in such studies.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Tunable magnetic textures in spin valves: From spintronics to Majorana bound states|Tong Zhou,Narayan Mohanta,Jong E. Han,Alex Matos-Abiague,Igor Zutic###
(1127406, 1127406)
 Together with proximity-inducedsuperconductivity in a two-dimensional electron gas, these fringing fieldsrealized in commercially-available spin valves could control Majorana boundstates (M<missing VAR>BS).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BS
###Tunable magnetic textures in spin valves: From spintronics to Majorana bound states|Tong Zhou,Narayan Mohanta,Jong E. Han,Alex Matos-Abiague,Igor Zutic###
(1127427, 1127428)
 Detailed support for the existence and control of M<missing VAR>BS is obtainedby combining accurate micromagnetic simulation of fringing fields used as aninput in Bogoliubov de Gennes equation to calculate low-energy spectrum,wavefunction localization, and local charge neutrality.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BS
###Tunable magnetic textures in spin valves: From spintronics to Majorana bound states|Tong Zhou,Narayan Mohanta,Jong E. Han,Alex Matos-Abiague,Igor Zutic###
(1127529, 1127530)
 A generalized conditionfor quantum phase transition in these structures provides valuable guidance forthe M<missing VAR>BS evolution and implementing reconfigurable effective topological wires.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi0.97Sb0.03
###Non-local signatures of the chiral magnetic effect in Dirac semimetal Bi$_{0.97}$Sb$_{0.03}$|Jorrit C. de Boer,Daan H. Wielens,Joris A. Voerman,Bob de Ronde,Yingkai Huang,Mark S. Golden,Chuan Li,Alexander Brinkman###
(1127577, 1127580)
Non-local signatures of the chiral magnetic effect in Dirac semimetal Bi0.97Sb0.03.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.03,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.97,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Non-local signatures of the chiral magnetic effect in Dirac semimetal Bi$_{0.97}$Sb$_{0.03}$|Jorrit C. de Boer,Daan H. Wielens,Joris A. Voerman,Bob de Ronde,Yingkai Huang,Mark S. Golden,Chuan Li,Alexander Brinkman###
(1127709, 1127709)
 The chiralmagnetic effect (CME), which originates from the Weyl nodes, causes antextbfE<missing VAR>cdottextbfB-dependent chiral charge polarization, whichmanifests itself as negative magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Non-local signatures of the chiral magnetic effect in Dirac semimetal Bi$_{0.97}$Sb$_{0.03}$|Jorrit C. de Boer,Daan H. Wielens,Joris A. Voerman,Bob de Ronde,Yingkai Huang,Mark S. Golden,Chuan Li,Alexander Brinkman###
(1127737, 1127737)
 The chiralmagnetic effect (CME), which originates from the Weyl nodes, causes antextbfE<missing VAR>cdottextbfB-dependent chiral charge polarization, whichmanifests itself as negative magnetoresistance.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Non-local signatures of the chiral magnetic effect in Dirac semimetal Bi$_{0.97}$Sb$_{0.03}$|Jorrit C. de Boer,Daan H. Wielens,Joris A. Voerman,Bob de Ronde,Yingkai Huang,Mark S. Golden,Chuan Li,Alexander Brinkman###
(1127789, 1127789)
 We exploit the extendedlifetime of the chirally polarized charge and study the CME through both localand non-local measurements in Hall bar structures fabricated from singlecrystalline flakes of the DSM Bi0.97Sb0.03.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi0.97Sb0.03
###Non-local signatures of the chiral magnetic effect in Dirac semimetal Bi$_{0.97}$Sb$_{0.03}$|Jorrit C. de Boer,Daan H. Wielens,Joris A. Voerman,Bob de Ronde,Yingkai Huang,Mark S. Golden,Chuan Li,Alexander Brinkman###
(1127835, 1127838)
 We exploit the extendedlifetime of the chirally polarized charge and study the CME through both localand non-local measurements in Hall bar structures fabricated from singlecrystalline flakes of the DSM Bi0.97Sb0.03.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.03,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.97,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi0.97Sb0.03
###Non-local signatures of the chiral magnetic effect in Dirac semimetal Bi$_{0.97}$Sb$_{0.03}$|Jorrit C. de Boer,Daan H. Wielens,Joris A. Voerman,Bob de Ronde,Yingkai Huang,Mark S. Golden,Chuan Li,Alexander Brinkman###
(1127907, 1127910)
 From the non-localmeasurement results we find a chiral charge relaxation time which is over oneorder of magnitude larger than the Drude transport lifetime, underlining thetopological nature of Bi0.97Sb0.03.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.03,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.97,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Quantitative Study on Current-Induced Effect in an Antiferromagnet Insulator/Pt Bilayer Film|Pengxiang Zhang,Joseph Finley,Taqiyyah Safi,Luqiao Liu###
(1127941, 1127941)
Quantitative Study on Current-Induced Effect in an Antiferromagnet Insulator/Pt Bilayer Film.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Quantitative Study on Current-Induced Effect in an Antiferromagnet Insulator/Pt Bilayer Film|Pengxiang Zhang,Joseph Finley,Taqiyyah Safi,Luqiao Liu###
(1127997, 1127997)
 Quantitative investigation on the current-induced torque in antiferromagnetsrepresents a great challenge, due to the lack of an independent method forcontrolling Neel vectors.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe2O3
###Quantitative Study on Current-Induced Effect in an Antiferromagnet Insulator/Pt Bilayer Film|Pengxiang Zhang,Joseph Finley,Taqiyyah Safi,Luqiao Liu###
(1128027, 1128030)
 Here by utilizing an antiferromagnetic insulatorwith Dzyaloshinskii-Moriya interaction, alpha-Fe2O3, we show that the Neelvector can be controlled with a moderate external field, which is furtherutilized to calibrate the current-induced magnetic dynamics.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Quantitative Study on Current-Induced Effect in an Antiferromagnet Insulator/Pt Bilayer Film|Pengxiang Zhang,Joseph Finley,Taqiyyah Safi,Luqiao Liu###
(1128041, 1128041)
 Here by utilizing an antiferromagnetic insulatorwith Dzyaloshinskii-Moriya interaction, alpha-Fe2O3, we show that the Neelvector can be controlled with a moderate external field, which is furtherutilized to calibrate the current-induced magnetic dynamics.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Quantitative Study on Current-Induced Effect in an Antiferromagnet Insulator/Pt Bilayer Film|Pengxiang Zhang,Joseph Finley,Taqiyyah Safi,Luqiao Liu###
(1128195, 1128195)
 By excludingnon-magnetic switching and comparing the current-induced dynamics with thefield-induced one, we determine the nature and magnitude of current-inducedeffects in Pt/alpha-Fe2O3 bilayer films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe2O3
###Quantitative Study on Current-Induced Effect in an Antiferromagnet Insulator/Pt Bilayer Film|Pengxiang Zhang,Joseph Finley,Taqiyyah Safi,Luqiao Liu###
(1128199, 1128202)
 By excludingnon-magnetic switching and comparing the current-induced dynamics with thefield-induced one, we determine the nature and magnitude of current-inducedeffects in Pt/alpha-Fe2O3 bilayer films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Dissipative-regime measurements as a tool for confirming and characterizing near-room-temperature superconductivity|Charles L. Dean,Milind N. Kunchur###
(1128592, 1128592)
 Keywords pairbreaking, pair-breaking, vortex, vortices, theory,tutorial, RTS, room-temperature superconductivity, superconductor, detection,characterization<missing PERIOD>
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe3GeTe2
###Planar topological Hall effect in a uniaxial van der Waals ferromagnet Fe3GeTe2|Yurong You,Yuanyuan Gong,Hang Li,Zefang Li,Mengmei Zhu,Jiaxuan Tang,Enke Liu,Yuan Yao,Guizhou Xu,Feng Xu,Wenhong Wang###
(1128641, 1128645)
Planar topological Hall effect in a uniaxial van der Waals ferromagnet Fe3GeTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[199.0, 100, 'K', 3]

In
###Planar topological Hall effect in a uniaxial van der Waals ferromagnet Fe3GeTe2|Yurong You,Yuanyuan Gong,Hang Li,Zefang Li,Mengmei Zhu,Jiaxuan Tang,Enke Liu,Yuan Yao,Guizhou Xu,Feng Xu,Wenhong Wang###
(1128648, 1128648)
 In this work, we reported the observation of a novel planar topological Halleffect (PTHE) in single crystal of Fe3GeTe2, a paradigmatic two-dimensionalferromagnet with strong uniaxial anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[196.0, 100, 'K', 2]

P
###Planar topological Hall effect in a uniaxial van der Waals ferromagnet Fe3GeTe2|Yurong You,Yuanyuan Gong,Hang Li,Zefang Li,Mengmei Zhu,Jiaxuan Tang,Enke Liu,Yuan Yao,Guizhou Xu,Feng Xu,Wenhong Wang###
(1128679, 1128679)
 In this work, we reported the observation of a novel planar topological Halleffect (PTHE) in single crystal of Fe3GeTe2, a paradigmatic two-dimensionalferromagnet with strong uniaxial anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 100, 'K', 2]

Fe3GeTe2
###Planar topological Hall effect in a uniaxial van der Waals ferromagnet Fe3GeTe2|Yurong You,Yuanyuan Gong,Hang Li,Zefang Li,Mengmei Zhu,Jiaxuan Tang,Enke Liu,Yuan Yao,Guizhou Xu,Feng Xu,Wenhong Wang###
(1128693, 1128697)
 In this work, we reported the observation of a novel planar topological Halleffect (PTHE) in single crystal of Fe3GeTe2, a paradigmatic two-dimensionalferromagnet with strong uniaxial anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 100, 'K', 2]

P
###Planar topological Hall effect in a uniaxial van der Waals ferromagnet Fe3GeTe2|Yurong You,Yuanyuan Gong,Hang Li,Zefang Li,Mengmei Zhu,Jiaxuan Tang,Enke Liu,Yuan Yao,Guizhou Xu,Feng Xu,Wenhong Wang###
(1128767, 1128767)
 The Hall effect andmagnetoresistance varied periodically when the external magnetic field rotatedin the ac (or bc) plane, while the PTHE emerged and maintained robust withfield swept across the hard-magnetized ab plane.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 100, 'K', 1]

P
###Planar topological Hall effect in a uniaxial van der Waals ferromagnet Fe3GeTe2|Yurong You,Yuanyuan Gong,Hang Li,Zefang Li,Mengmei Zhu,Jiaxuan Tang,Enke Liu,Yuan Yao,Guizhou Xu,Feng Xu,Wenhong Wang###
(1128802, 1128802)
 The PTHE covers the wholetemperature region below Tc (150 K) and a comparatively large value isobserved at 100 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 100, 'K', 0]

Tc
###Planar topological Hall effect in a uniaxial van der Waals ferromagnet Fe3GeTe2|Yurong You,Yuanyuan Gong,Hang Li,Zefang Li,Mengmei Zhu,Jiaxuan Tang,Enke Liu,Yuan Yao,Guizhou Xu,Feng Xu,Wenhong Wang###
(1128820, 1128820)
 The PTHE covers the wholetemperature region below Tc (150 K) and a comparatively large value isobserved at 100 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 100, 'K', 0]

K
###Planar topological Hall effect in a uniaxial van der Waals ferromagnet Fe3GeTe2|Yurong You,Yuanyuan Gong,Hang Li,Zefang Li,Mengmei Zhu,Jiaxuan Tang,Enke Liu,Yuan Yao,Guizhou Xu,Feng Xu,Wenhong Wang###
(1128825, 1128825)
 The PTHE covers the wholetemperature region below Tc (150 K) and a comparatively large value isobserved at 100 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 100, 'K', 0]

P
###Planar topological Hall effect in a uniaxial van der Waals ferromagnet Fe3GeTe2|Yurong You,Yuanyuan Gong,Hang Li,Zefang Li,Mengmei Zhu,Jiaxuan Tang,Enke Liu,Yuan Yao,Guizhou Xu,Feng Xu,Wenhong Wang###
(1128878, 1128878)
 Emergence of an internal gauge field was proposed to explainthe origin of this large PTHE, which is either generated by the possibletopological domain structure of uniaxial Fe3GeTe2 or the non-coplanar spinstructure formed during the in-plane magnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 100, 'K', 1]

Fe3GeTe2
###Planar topological Hall effect in a uniaxial van der Waals ferromagnet Fe3GeTe2|Yurong You,Yuanyuan Gong,Hang Li,Zefang Li,Mengmei Zhu,Jiaxuan Tang,Enke Liu,Yuan Yao,Guizhou Xu,Feng Xu,Wenhong Wang###
(1128909, 1128913)
 Emergence of an internal gauge field was proposed to explainthe origin of this large PTHE, which is either generated by the possibletopological domain structure of uniaxial Fe3GeTe2 or the non-coplanar spinstructure formed during the in-plane magnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 100, 'K', 1]

EuMnSb2
###Magnetic and electronic structure of Dirac semimetal candidate EuMnSb$_2$|J. -R. Soh,P. Manuel,N. M. B. Schröter,C. J. Yi,D. Prabhakaran,F. Orlandi,Y. G. Shi,A. T. Boothroyd###
(1129025, 1129028)
Magnetic and electronic structure of Dirac semimetal candidate EuMnSb2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuMnSb2
###Magnetic and electronic structure of Dirac semimetal candidate EuMnSb$_2$|J. -R. Soh,P. Manuel,N. M. B. Schröter,C. J. Yi,D. Prabhakaran,F. Orlandi,Y. G. Shi,A. T. Boothroyd###
(1129068, 1129071)
 We report an experimental study of the magnetic order and electronicstructure and transport of the layered pnictide EuMnSb2, performed usingneutron diffraction, angle-resolved photoemission spectroscopy (ARPES), andmagnetotransport measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Magnetic and electronic structure of Dirac semimetal candidate EuMnSb$_2$|J. -R. Soh,P. Manuel,N. M. B. Schröter,C. J. Yi,D. Prabhakaran,F. Orlandi,Y. G. Shi,A. T. Boothroyd###
(1129097, 1129097)
 We report an experimental study of the magnetic order and electronicstructure and transport of the layered pnictide EuMnSb2, performed usingneutron diffraction, angle-resolved photoemission spectroscopy (ARPES), andmagnetotransport measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Eu
###Magnetic and electronic structure of Dirac semimetal candidate EuMnSb$_2$|J. -R. Soh,P. Manuel,N. M. B. Schröter,C. J. Yi,D. Prabhakaran,F. Orlandi,Y. G. Shi,A. T. Boothroyd###
(1129117, 1129117)
 We find that the Eu and Mn sublattices displayantiferromagnetic (AFM) order below T<missing VAR>mathrmNmathrmEu  21(1) K andT<missing VAR>mathrmNmathrmMn  350(2) K respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Magnetic and electronic structure of Dirac semimetal candidate EuMnSb$_2$|J. -R. Soh,P. Manuel,N. M. B. Schröter,C. J. Yi,D. Prabhakaran,F. Orlandi,Y. G. Shi,A. T. Boothroyd###
(1129121, 1129121)
 We find that the Eu and Mn sublattices displayantiferromagnetic (AFM) order below T<missing VAR>mathrmNmathrmEu  21(1) K andT<missing VAR>mathrmNmathrmMn  350(2) K respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Magnetic and electronic structure of Dirac semimetal candidate EuMnSb$_2$|J. -R. Soh,P. Manuel,N. M. B. Schröter,C. J. Yi,D. Prabhakaran,F. Orlandi,Y. G. Shi,A. T. Boothroyd###
(1129132, 1129132)
 We find that the Eu and Mn sublattices displayantiferromagnetic (AFM) order below T<missing VAR>mathrmNmathrmEu  21(1) K andT<missing VAR>mathrmNmathrmMn  350(2) K respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Magnetic and electronic structure of Dirac semimetal candidate EuMnSb$_2$|J. -R. Soh,P. Manuel,N. M. B. Schröter,C. J. Yi,D. Prabhakaran,F. Orlandi,Y. G. Shi,A. T. Boothroyd###
(1129142, 1129142)
 We find that the Eu and Mn sublattices displayantiferromagnetic (AFM) order below T<missing VAR>mathrmNmathrmEu  21(1) K andT<missing VAR>mathrmNmathrmMn  350(2) K respectively.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Eu
###Magnetic and electronic structure of Dirac semimetal candidate EuMnSb$_2$|J. -R. Soh,P. Manuel,N. M. B. Schröter,C. J. Yi,D. Prabhakaran,F. Orlandi,Y. G. Shi,A. T. Boothroyd###
(1129144, 1129144)
 We find that the Eu and Mn sublattices displayantiferromagnetic (AFM) order below T<missing VAR>mathrmNmathrmEu  21(1) K andT<missing VAR>mathrmNmathrmMn  350(2) K respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Magnetic and electronic structure of Dirac semimetal candidate EuMnSb$_2$|J. -R. Soh,P. Manuel,N. M. B. Schröter,C. J. Yi,D. Prabhakaran,F. Orlandi,Y. G. Shi,A. T. Boothroyd###
(1129152, 1129152)
 We find that the Eu and Mn sublattices displayantiferromagnetic (AFM) order below T<missing VAR>mathrmNmathrmEu  21(1) K andT<missing VAR>mathrmNmathrmMn  350(2) K respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Magnetic and electronic structure of Dirac semimetal candidate EuMnSb$_2$|J. -R. Soh,P. Manuel,N. M. B. Schröter,C. J. Yi,D. Prabhakaran,F. Orlandi,Y. G. Shi,A. T. Boothroyd###
(1129159, 1129159)
 We find that the Eu and Mn sublattices displayantiferromagnetic (AFM) order below T<missing VAR>mathrmNmathrmEu  21(1) K andT<missing VAR>mathrmNmathrmMn  350(2) K respectively.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Magnetic and electronic structure of Dirac semimetal candidate EuMnSb$_2$|J. -R. Soh,P. Manuel,N. M. B. Schröter,C. J. Yi,D. Prabhakaran,F. Orlandi,Y. G. Shi,A. T. Boothroyd###
(1129161, 1129161)
 We find that the Eu and Mn sublattices displayantiferromagnetic (AFM) order below T<missing VAR>mathrmNmathrmEu  21(1) K andT<missing VAR>mathrmNmathrmMn  350(2) K respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Magnetic and electronic structure of Dirac semimetal candidate EuMnSb$_2$|J. -R. Soh,P. Manuel,N. M. B. Schröter,C. J. Yi,D. Prabhakaran,F. Orlandi,Y. G. Shi,A. T. Boothroyd###
(1129169, 1129169)
 We find that the Eu and Mn sublattices displayantiferromagnetic (AFM) order below T<missing VAR>mathrmNmathrmEu  21(1) K andT<missing VAR>mathrmNmathrmMn  350(2) K respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Magnetic and electronic structure of Dirac semimetal candidate EuMnSb$_2$|J. -R. Soh,P. Manuel,N. M. B. Schröter,C. J. Yi,D. Prabhakaran,F. Orlandi,Y. G. Shi,A. T. Boothroyd###
(1129194, 1129194)
 The former can be describedby an A-type AFM<missing VAR> structure with the Eu spins aligned along the c<missing VAR> axis (anin-plane direction), whereas the latter has a C-type AFM<missing VAR> structure with Mnmoments along the a--axis (perpendicular to the layers).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Eu
###Magnetic and electronic structure of Dirac semimetal candidate EuMnSb$_2$|J. -R. Soh,P. Manuel,N. M. B. Schröter,C. J. Yi,D. Prabhakaran,F. Orlandi,Y. G. Shi,A. T. Boothroyd###
(1129203, 1129203)
 The former can be describedby an A-type AFM<missing VAR> structure with the Eu spins aligned along the c<missing VAR> axis (anin-plane direction), whereas the latter has a C-type AFM<missing VAR> structure with Mnmoments along the a--axis (perpendicular to the layers).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Magnetic and electronic structure of Dirac semimetal candidate EuMnSb$_2$|J. -R. Soh,P. Manuel,N. M. B. Schröter,C. J. Yi,D. Prabhakaran,F. Orlandi,Y. G. Shi,A. T. Boothroyd###
(1129239, 1129239)
 The former can be describedby an A-type AFM<missing VAR> structure with the Eu spins aligned along the c<missing VAR> axis (anin-plane direction), whereas the latter has a C-type AFM<missing VAR> structure with Mnmoments along the a--axis (perpendicular to the layers).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Magnetic and electronic structure of Dirac semimetal candidate EuMnSb$_2$|J. -R. Soh,P. Manuel,N. M. B. Schröter,C. J. Yi,D. Prabhakaran,F. Orlandi,Y. G. Shi,A. T. Boothroyd###
(1129244, 1129244)
 The former can be describedby an A-type AFM<missing VAR> structure with the Eu spins aligned along the c<missing VAR> axis (anin-plane direction), whereas the latter has a C-type AFM<missing VAR> structure with Mnmoments along the a--axis (perpendicular to the layers).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Magnetic and electronic structure of Dirac semimetal candidate EuMnSb$_2$|J. -R. Soh,P. Manuel,N. M. B. Schröter,C. J. Yi,D. Prabhakaran,F. Orlandi,Y. G. Shi,A. T. Boothroyd###
(1129251, 1129251)
 The former can be describedby an A-type AFM<missing VAR> structure with the Eu spins aligned along the c<missing VAR> axis (anin-plane direction), whereas the latter has a C-type AFM<missing VAR> structure with Mnmoments along the a--axis (perpendicular to the layers).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Magnetic and electronic structure of Dirac semimetal candidate EuMnSb$_2$|J. -R. Soh,P. Manuel,N. M. B. Schröter,C. J. Yi,D. Prabhakaran,F. Orlandi,Y. G. Shi,A. T. Boothroyd###
(1129282, 1129282)
 The ARPES spectrareveal Dirac-like linearly dispersing bands near the Fermi energy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Eu
###Magnetic and electronic structure of Dirac semimetal candidate EuMnSb$_2$|J. -R. Soh,P. Manuel,N. M. B. Schröter,C. J. Yi,D. Prabhakaran,F. Orlandi,Y. G. Shi,A. T. Boothroyd###
(1129336, 1129336)
 Furthermore,our magnetotransport measurements show strongly anisotropic magnetoresistance,and indicate that the Eu sublattice is intimately coupled to conductionelectron states near the Dirac point.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Al
###Electron transport in high-entropy alloys: Al$_{x}$CrFeCoNi as a case study|J. Kudrnovský,V. Drchal,F. Máca,I. Turek,S. Khmelevskyi###
(1129384, 1129384)
Electron transport in high-entropy alloys Alx<missing VAR>CrFeCoNi as a case study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CrFeCoNi
###Electron transport in high-entropy alloys: Al$_{x}$CrFeCoNi as a case study|J. Kudrnovský,V. Drchal,F. Máca,I. Turek,S. Khmelevskyi###
(1129386, 1129389)
Electron transport in high-entropy alloys Alx<missing VAR>CrFeCoNi as a case study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0.25,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Al
###Electron transport in high-entropy alloys: Al$_{x}$CrFeCoNi as a case study|J. Kudrnovský,V. Drchal,F. Máca,I. Turek,S. Khmelevskyi###
(1129408, 1129408)
 The high-entropy alloys Alx<missing VAR>CrFeCoNi exist over a broad range of Alconcentrations (0 < x<missing VAR> < 2).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CrFeCoNi
###Electron transport in high-entropy alloys: Al$_{x}$CrFeCoNi as a case study|J. Kudrnovský,V. Drchal,F. Máca,I. Turek,S. Khmelevskyi###
(1129410, 1129413)
 The high-entropy alloys Alx<missing VAR>CrFeCoNi exist over a broad range of Alconcentrations (0 < x<missing VAR> < 2).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0.25,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Al
###Electron transport in high-entropy alloys: Al$_{x}$CrFeCoNi as a case study|J. Kudrnovský,V. Drchal,F. Máca,I. Turek,S. Khmelevskyi###
(1129427, 1129427)
 The high-entropy alloys Alx<missing VAR>CrFeCoNi exist over a broad range of Alconcentrations (0 < x<missing VAR> < 2).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Al
###Electron transport in high-entropy alloys: Al$_{x}$CrFeCoNi as a case study|J. Kudrnovský,V. Drchal,F. Máca,I. Turek,S. Khmelevskyi###
(1129449, 1129449)
 With increasing Al content their structure ischanged from the fcc to bcc phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Irradiation-induced metal-insulator transition in monolayer graphene|I. Shlimak,E. Zion,A. Butenko,Yu. Kaganovskii,V. Richter,A. Sharoni,E. Kogan,M. Kaveh###
(1129980, 1129980)
Further increase of disorder leads to strong localization of charge carriers,when the conductivity is described by the variable-range-hopping (VR<missing VAR>H)mechanism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Irradiation-induced metal-insulator transition in monolayer graphene|I. Shlimak,E. Zion,A. Butenko,Yu. Kaganovskii,V. Richter,A. Sharoni,E. Kogan,M. Kaveh###
(1129982, 1129982)
Further increase of disorder leads to strong localization of charge carriers,when the conductivity is described by the variable-range-hopping (VR<missing VAR>H)mechanism.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Irradiation-induced metal-insulator transition in monolayer graphene|I. Shlimak,E. Zion,A. Butenko,Yu. Kaganovskii,V. Richter,A. Sharoni,E. Kogan,M. Kaveh###
(1130004, 1130004)
 It was observed that MR in the VR<missing VAR>H regime is negative inperpendicular fields and is positive in parallel magnetic fields which allowedto reveal different mechanisms of hopping MR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Irradiation-induced metal-insulator transition in monolayer graphene|I. Shlimak,E. Zion,A. Butenko,Yu. Kaganovskii,V. Richter,A. Sharoni,E. Kogan,M. Kaveh###
(1130006, 1130006)
 It was observed that MR in the VR<missing VAR>H regime is negative inperpendicular fields and is positive in parallel magnetic fields which allowedto reveal different mechanisms of hopping MR.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Moiré Engineering of Electronic Phenomena in Correlated Oxides|Xinzhong Chen,Xiaodong Fan,Lin Li,Nan Zhang,Zhijing Niu,Tengfei Guo,Suheng Xu,Han Xu,Dongli Wang,Huayang Zhang,A. S. McLeod,Zhenlin Luo,Qingyou Lu,Andrew J. Millis,D. N. Basov,Mengkun Liu,Changgan Zeng###
(1130140, 1130140)
 In van der Waalsheterostructures, moire<missing VAR> patterns can be formed by lattice misorientationbetween adjacent atomic layers, creating long range electronic order.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.67Sr0.33MnO3
###Moiré Engineering of Electronic Phenomena in Correlated Oxides|Xinzhong Chen,Xiaodong Fan,Lin Li,Nan Zhang,Zhijing Niu,Tengfei Guo,Suheng Xu,Han Xu,Dongli Wang,Huayang Zhang,A. S. McLeod,Zhenlin Luo,Qingyou Lu,Andrew J. Millis,D. N. Basov,Mengkun Liu,Changgan Zeng###
(1130258, 1130264)
 Herein, we describe our discovery of electronic moire<missing VAR> patternsin films of a prototypical magnetoresistive oxide La0.67Sr0.33MnO3 (LSMO)epitaxially grown on LaAlO3 (L<missing VAR>AO) substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.066,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.134,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Moiré Engineering of Electronic Phenomena in Correlated Oxides|Xinzhong Chen,Xiaodong Fan,Lin Li,Nan Zhang,Zhijing Niu,Tengfei Guo,Suheng Xu,Han Xu,Dongli Wang,Huayang Zhang,A. S. McLeod,Zhenlin Luo,Qingyou Lu,Andrew J. Millis,D. N. Basov,Mengkun Liu,Changgan Zeng###
(1130270, 1130270)
 Herein, we describe our discovery of electronic moire<missing VAR> patternsin films of a prototypical magnetoresistive oxide La0.67Sr0.33MnO3 (LSMO)epitaxially grown on LaAlO3 (L<missing VAR>AO) substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaAlO3
###Moiré Engineering of Electronic Phenomena in Correlated Oxides|Xinzhong Chen,Xiaodong Fan,Lin Li,Nan Zhang,Zhijing Niu,Tengfei Guo,Suheng Xu,Han Xu,Dongli Wang,Huayang Zhang,A. S. McLeod,Zhenlin Luo,Qingyou Lu,Andrew J. Millis,D. N. Basov,Mengkun Liu,Changgan Zeng###
(1130280, 1130283)
 Herein, we describe our discovery of electronic moire<missing VAR> patternsin films of a prototypical magnetoresistive oxide La0.67Sr0.33MnO3 (LSMO)epitaxially grown on LaAlO3 (L<missing VAR>AO) substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Moiré Engineering of Electronic Phenomena in Correlated Oxides|Xinzhong Chen,Xiaodong Fan,Lin Li,Nan Zhang,Zhijing Niu,Tengfei Guo,Suheng Xu,Han Xu,Dongli Wang,Huayang Zhang,A. S. McLeod,Zhenlin Luo,Qingyou Lu,Andrew J. Millis,D. N. Basov,Mengkun Liu,Changgan Zeng###
(1130288, 1130288)
 Herein, we describe our discovery of electronic moire<missing VAR> patternsin films of a prototypical magnetoresistive oxide La0.67Sr0.33MnO3 (LSMO)epitaxially grown on LaAlO3 (L<missing VAR>AO) substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Moiré Engineering of Electronic Phenomena in Correlated Oxides|Xinzhong Chen,Xiaodong Fan,Lin Li,Nan Zhang,Zhijing Niu,Tengfei Guo,Suheng Xu,Han Xu,Dongli Wang,Huayang Zhang,A. S. McLeod,Zhenlin Luo,Qingyou Lu,Andrew J. Millis,D. N. Basov,Mengkun Liu,Changgan Zeng###
(1130380, 1130380)
 The net effect is that both electronicconductivity and ferromagnetism of LSMO are modulated by periodic moire<missing VAR>textures extending over mesoscopic scales.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Hf0.5Zr0.5O2
###Magneto-ionic control of spin polarization in magnetic tunnel junctions|Yingfen Wei,Sylvia Matzen,Cynthia P. Quinteros,Thomas Maroutian,Guillaume Agnus,Philippe Lecoeur,Beatriz Noheda###
(1130493, 1130498)
 Magnetic tunnel junctions (MTJs) with Hf0.5Zr0.5O2 barriers are reported toshow both tunneling magnetoresistance effect (TMR) and tunnelingelectroresistance effect (TER), displaying four resistance states by magneticand electric field switching.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 6, '%', 1]

In
###Electronics without bridging components|V. M. García-Suárez###
(1130951, 1130951)
 In particular, we show that it ispossible to deliver a given functionality by changing the coupling between thesurface and bulk states and between the surface states across the gap, whichdramatically changes the current-voltage characteristics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe2O3/Pt
###Large spin Hall magnetoresistance in antiferromagnetic α-Fe2O3/Pt heterostructures|Johanna Fischer,Matthias Althammer,Nynke Vlietstra,Hans Huebl,Sebastian T. B. Goennenwein,Rudolf Gross,Stephan Geprägs,Matthias Opel###
(1131105, 1131110)
Large spin Hall magnetoresistance in antiferromagnetic -Fe2O3/Pt heterostructures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[101.0, 17, 'T', 2],[232.0, 0.25, '%', 5]

S
###Large spin Hall magnetoresistance in antiferromagnetic α-Fe2O3/Pt heterostructures|Johanna Fischer,Matthias Althammer,Nynke Vlietstra,Hans Huebl,Sebastian T. B. Goennenwein,Rudolf Gross,Stephan Geprägs,Matthias Opel###
(1131128, 1131128)
 We investigate the spin Hall magnetoresistance (SMR) at room temperature inthin film heterostructures of antiferromagnetic, insulating, (0001)-orientedalpha-Fe2O3 (hematite) and Pt.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 17, 'T', 1],[214.0, 0.25, '%', 4]

Fe2O3
###Large spin Hall magnetoresistance in antiferromagnetic α-Fe2O3/Pt heterostructures|Johanna Fischer,Matthias Althammer,Nynke Vlietstra,Hans Huebl,Sebastian T. B. Goennenwein,Rudolf Gross,Stephan Geprägs,Matthias Opel###
(1131165, 1131168)
 We investigate the spin Hall magnetoresistance (SMR) at room temperature inthin film heterostructures of antiferromagnetic, insulating, (0001)-orientedalpha-Fe2O3 (hematite) and Pt.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 17, 'T', 1],[174.0, 0.25, '%', 4]

Pt
###Large spin Hall magnetoresistance in antiferromagnetic α-Fe2O3/Pt heterostructures|Johanna Fischer,Matthias Althammer,Nynke Vlietstra,Hans Huebl,Sebastian T. B. Goennenwein,Rudolf Gross,Stephan Geprägs,Matthias Opel###
(1131176, 1131176)
 We investigate the spin Hall magnetoresistance (SMR) at room temperature inthin film heterostructures of antiferromagnetic, insulating, (0001)-orientedalpha-Fe2O3 (hematite) and Pt.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 17, 'T', 1],[166.0, 0.25, '%', 4]

S
###Large spin Hall magnetoresistance in antiferromagnetic α-Fe2O3/Pt heterostructures|Johanna Fischer,Matthias Althammer,Nynke Vlietstra,Hans Huebl,Sebastian T. B. Goennenwein,Rudolf Gross,Stephan Geprägs,Matthias Opel###
(1131305, 1131305)
 For in-plane field rotations, weclearly observe a sinusoidal resistivity oscillation characteristic for the SMRdue to a coherent rotation of the Neel vector.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 17, 'T', 2],[37.0, 0.25, '%', 1]

S
###Large spin Hall magnetoresistance in antiferromagnetic α-Fe2O3/Pt heterostructures|Johanna Fischer,Matthias Althammer,Nynke Vlietstra,Hans Huebl,Sebastian T. B. Goennenwein,Rudolf Gross,Stephan Geprägs,Matthias Opel###
(1131333, 1131333)
 The maximum SMR amplitude of0.25% is, surprisingly, twice as high as for prototypical ferrimagneticY3Fe5O12/Pt heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 17, 'T', 3],[9.0, 0.25, '%', 0]

Y3Fe5O12/Pt
###Large spin Hall magnetoresistance in antiferromagnetic α-Fe2O3/Pt heterostructures|Johanna Fischer,Matthias Althammer,Nynke Vlietstra,Hans Huebl,Sebastian T. B. Goennenwein,Rudolf Gross,Stephan Geprägs,Matthias Opel###
(1131366, 1131373)
 The maximum SMR amplitude of0.25% is, surprisingly, twice as high as for prototypical ferrimagneticY3Fe5O12/Pt heterostructures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[155.0, 17, 'T', 3],[24.0, 0.25, '%', 0]

S
###Large spin Hall magnetoresistance in antiferromagnetic α-Fe2O3/Pt heterostructures|Johanna Fischer,Matthias Althammer,Nynke Vlietstra,Hans Huebl,Sebastian T. B. Goennenwein,Rudolf Gross,Stephan Geprägs,Matthias Opel###
(1131380, 1131380)
 The SMR effect saturates at much smaller magneticfields than in comparable antiferromagnets, making the alpha-Fe2O3/Pt systemparticularly interesting for room-temperature antiferromagnetic spintronicapplications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 17, 'T', 4],[38.0, 0.25, '%', 1]

Fe2O3/Pt
###Large spin Hall magnetoresistance in antiferromagnetic α-Fe2O3/Pt heterostructures|Johanna Fischer,Matthias Althammer,Nynke Vlietstra,Hans Huebl,Sebastian T. B. Goennenwein,Rudolf Gross,Stephan Geprägs,Matthias Opel###
(1131414, 1131419)
 The SMR effect saturates at much smaller magneticfields than in comparable antiferromagnets, making the alpha-Fe2O3/Pt systemparticularly interesting for room-temperature antiferromagnetic spintronicapplications.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[203.0, 17, 'T', 4],[72.0, 0.25, '%', 1]

TaAs
###Field-angle dependence of sound velocity in the Weyl semimetal TaAs|F. Laliberté,F. Bélanger,N. L. Nair,J. G. Analytis,M. -E. Boulanger,M. Dion,L. Taillefer,J. A. Quilliam###
(1131470, 1131471)
Field-angle dependence of sound velocity in the Weyl semimetal TaAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 10, 'T', 1],[149.0, 6, 'T', 3]

TaAs
###Field-angle dependence of sound velocity in the Weyl semimetal TaAs|F. Laliberté,F. Bélanger,N. L. Nair,J. G. Analytis,M. -E. Boulanger,M. Dion,L. Taillefer,J. A. Quilliam###
(1131499, 1131500)
 The elastic modulus c<missing VAR>44 of a single crystal of the Weyl semimetal TaAswas investigated by measuring relative changes in the sound velocity underapplication of a magnetic field up to 10 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 10, 'T', 0],[120.0, 6, 'T', 2]

Ta3SiTe6
###Magneto-transport and Shubnikov-de Haas oscillations in the layered ternary telluride Ta3SiTe6 topological semimetal|Muhammad Naveed,Fucong Fei,Haijun Bu,Xiangyan Bo,Syed Adil Shah,Bo Chen,Yong Zhang,Qianqian Liu,Boyuan Wei,Shuai Zhang,Chuanying Xi,Xiangang Wan,Fengqi Song###
(1131832, 1131836)
Magneto-transport and Shubnikov-de Haas oscillations in the layered ternary telluride Ta3SiTe6 topological semimetal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[212.0, 0.13, 'angstrom', 6],[217.0, 2.0, 'Combining', 6]

H
###Magneto-transport and Shubnikov-de Haas oscillations in the layered ternary telluride Ta3SiTe6 topological semimetal|Muhammad Naveed,Fucong Fei,Haijun Bu,Xiangyan Bo,Syed Adil Shah,Bo Chen,Yong Zhang,Qianqian Liu,Boyuan Wei,Shuai Zhang,Chuanying Xi,Xiangang Wan,Fengqi Song###
(1131918, 1131918)
 Here we report the magnetoresistance andShubnikov-de Haas (SdH) quantum oscillation of longitudinal resistance in thesingle crystal of topological semimetal Ta3SiTe6 with the magnetic field up to38 T<missing VAR>.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 0.13, 'angstrom', 3],[135.0, 2.0, 'Combining', 3]

Ta3SiTe6
###Magneto-transport and Shubnikov-de Haas oscillations in the layered ternary telluride Ta3SiTe6 topological semimetal|Muhammad Naveed,Fucong Fei,Haijun Bu,Xiangyan Bo,Syed Adil Shah,Bo Chen,Yong Zhang,Qianqian Liu,Boyuan Wei,Shuai Zhang,Chuanying Xi,Xiangang Wan,Fengqi Song###
(1131946, 1131950)
 Here we report the magnetoresistance andShubnikov-de Haas (SdH) quantum oscillation of longitudinal resistance in thesingle crystal of topological semimetal Ta3SiTe6 with the magnetic field up to38 T<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 0.13, 'angstrom', 3],[103.0, 2.0, 'Combining', 3]

H
###Magneto-transport and Shubnikov-de Haas oscillations in the layered ternary telluride Ta3SiTe6 topological semimetal|Muhammad Naveed,Fucong Fei,Haijun Bu,Xiangyan Bo,Syed Adil Shah,Bo Chen,Yong Zhang,Qianqian Liu,Boyuan Wei,Shuai Zhang,Chuanying Xi,Xiangang Wan,Fengqi Song###
(1132104, 1132104)
 Hall resistivity and the SdHoscillations recommend that Ta3SiTe6 is a hole dominated system.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 0.13, 'angstrom', 1],[51.0, 2.0, 'Combining', 1]

Ta3SiTe6
###Magneto-transport and Shubnikov-de Haas oscillations in the layered ternary telluride Ta3SiTe6 topological semimetal|Muhammad Naveed,Fucong Fei,Haijun Bu,Xiangyan Bo,Syed Adil Shah,Bo Chen,Yong Zhang,Qianqian Liu,Boyuan Wei,Shuai Zhang,Chuanying Xi,Xiangang Wan,Fengqi Song###
(1132113, 1132117)
 Hall resistivity and the SdHoscillations recommend that Ta3SiTe6 is a hole dominated system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 0.13, 'angstrom', 1],[60.0, 2.0, 'Combining', 1]

Na
###Charge Density Modulation and Defect Ordering in Na$_x$MnBi$_y$ magnetic semimetal|Aaron Wegner,Despina Louca,Keith Taddei,Joerg Neuefeind###
(1132152, 1132152)
Charge Density Modulation and Defect Ordering in Nax<missing VAR>MnBiy<missing VAR> magnetic semimetal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 10, ',', 1],[51.0, 0, '%', 1],[55.0, 2, 'K', 1],[58.0, 9, 'T', 1],[105.0, 20, '%', 2],[200.0, 23, ',', 3],[203.0, 0, ',', 3],[215.0, 23, ',', 3],[219.0, 13, ',', 3]

MnBi
###Charge Density Modulation and Defect Ordering in Na$_x$MnBi$_y$ magnetic semimetal|Aaron Wegner,Despina Louca,Keith Taddei,Joerg Neuefeind###
(1132154, 1132155)
Charge Density Modulation and Defect Ordering in Nax<missing VAR>MnBiy<missing VAR> magnetic semimetal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 10, ',', 1],[48.0, 0, '%', 1],[52.0, 2, 'K', 1],[55.0, 9, 'T', 1],[102.0, 20, '%', 2],[197.0, 23, ',', 3],[200.0, 0, ',', 3],[212.0, 23, ',', 3],[216.0, 13, ',', 3]

I
###Charge Density Modulation and Defect Ordering in Na$_x$MnBi$_y$ magnetic semimetal|Aaron Wegner,Despina Louca,Keith Taddei,Joerg Neuefeind###
(1132165, 1132165)
 The I-Mn-V antiferromagnet, NaMnBi, develops a very large positivemagnetoresistance (MR) up to 10,000% at 2 K and 9 T in crystals showing asemiconductor-to-metal transition (SMT).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 10, ',', 0],[38.0, 0, '%', 0],[42.0, 2, 'K', 0],[45.0, 9, 'T', 0],[92.0, 20, '%', 1],[187.0, 23, ',', 2],[190.0, 0, ',', 2],[202.0, 23, ',', 2],[206.0, 13, ',', 2]

Mn
###Charge Density Modulation and Defect Ordering in Na$_x$MnBi$_y$ magnetic semimetal|Aaron Wegner,Despina Louca,Keith Taddei,Joerg Neuefeind###
(1132167, 1132167)
 The I-Mn-V antiferromagnet, NaMnBi, develops a very large positivemagnetoresistance (MR) up to 10,000% at 2 K and 9 T in crystals showing asemiconductor-to-metal transition (SMT).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 10, ',', 0],[36.0, 0, '%', 0],[40.0, 2, 'K', 0],[43.0, 9, 'T', 0],[90.0, 20, '%', 1],[185.0, 23, ',', 2],[188.0, 0, ',', 2],[200.0, 23, ',', 2],[204.0, 13, ',', 2]

V
###Charge Density Modulation and Defect Ordering in Na$_x$MnBi$_y$ magnetic semimetal|Aaron Wegner,Despina Louca,Keith Taddei,Joerg Neuefeind###
(1132169, 1132169)
 The I-Mn-V antiferromagnet, NaMnBi, develops a very large positivemagnetoresistance (MR) up to 10,000% at 2 K and 9 T in crystals showing asemiconductor-to-metal transition (SMT).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 10, ',', 0],[34.0, 0, '%', 0],[38.0, 2, 'K', 0],[41.0, 9, 'T', 0],[88.0, 20, '%', 1],[183.0, 23, ',', 2],[186.0, 0, ',', 2],[198.0, 23, ',', 2],[202.0, 13, ',', 2]

NaMnBi
###Charge Density Modulation and Defect Ordering in Na$_x$MnBi$_y$ magnetic semimetal|Aaron Wegner,Despina Louca,Keith Taddei,Joerg Neuefeind###
(1132174, 1132176)
 The I-Mn-V antiferromagnet, NaMnBi, develops a very large positivemagnetoresistance (MR) up to 10,000% at 2 K and 9 T in crystals showing asemiconductor-to-metal transition (SMT).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 10, ',', 0],[27.0, 0, '%', 0],[31.0, 2, 'K', 0],[34.0, 9, 'T', 0],[81.0, 20, '%', 1],[176.0, 23, ',', 2],[179.0, 0, ',', 2],[191.0, 23, ',', 2],[195.0, 13, ',', 2]

S
###Charge Density Modulation and Defect Ordering in Na$_x$MnBi$_y$ magnetic semimetal|Aaron Wegner,Despina Louca,Keith Taddei,Joerg Neuefeind###
(1132230, 1132230)
 The I-Mn-V antiferromagnet, NaMnBi, develops a very large positivemagnetoresistance (MR) up to 10,000% at 2 K and 9 T in crystals showing asemiconductor-to-metal transition (SMT).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 10, ',', 0],[27.0, 0, '%', 0],[23.0, 2, 'K', 0],[20.0, 9, 'T', 0],[27.0, 20, '%', 1],[122.0, 23, ',', 2],[125.0, 0, ',', 2],[137.0, 23, ',', 2],[141.0, 13, ',', 2]

In
###Charge Density Modulation and Defect Ordering in Na$_x$MnBi$_y$ magnetic semimetal|Aaron Wegner,Despina Louca,Keith Taddei,Joerg Neuefeind###
(1132236, 1132236)
 In the absence of an SMT, a modest(20%) MR is achieved.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 10, ',', 1],[33.0, 0, '%', 1],[29.0, 2, 'K', 1],[26.0, 9, 'T', 1],[21.0, 20, '%', 0],[116.0, 23, ',', 1],[119.0, 0, ',', 1],[131.0, 23, ',', 1],[135.0, 13, ',', 1]

S
###Charge Density Modulation and Defect Ordering in Na$_x$MnBi$_y$ magnetic semimetal|Aaron Wegner,Despina Louca,Keith Taddei,Joerg Neuefeind###
(1132246, 1132246)
 In the absence of an SMT, a modest(20%) MR is achieved.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 10, ',', 1],[43.0, 0, '%', 1],[39.0, 2, 'K', 1],[36.0, 9, 'T', 1],[11.0, 20, '%', 0],[106.0, 23, ',', 1],[109.0, 0, ',', 1],[121.0, 23, ',', 1],[125.0, 13, ',', 1]

P4
###Charge Density Modulation and Defect Ordering in Na$_x$MnBi$_y$ magnetic semimetal|Aaron Wegner,Despina Louca,Keith Taddei,Joerg Neuefeind###
(1132414, 1132415)
 This constitutes a superlattice transition (Ts) that lowers thesymmetry from the high temperature centrosymmetric P4/nmm to thenon-centrosymmetric Poverline4m<missing VAR>2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[213.0, 10, ',', 3],[211.0, 0, '%', 3],[207.0, 2, 'K', 3],[204.0, 9, 'T', 3],[157.0, 20, '%', 2],[62.0, 23, ',', 1],[59.0, 0, ',', 1],[47.0, 23, ',', 1],[43.0, 13, ',', 1]

P
###Charge Density Modulation and Defect Ordering in Na$_x$MnBi$_y$ magnetic semimetal|Aaron Wegner,Despina Louca,Keith Taddei,Joerg Neuefeind###
(1132428, 1132428)
 This constitutes a superlattice transition (Ts) that lowers thesymmetry from the high temperature centrosymmetric P4/nmm to thenon-centrosymmetric Poverline4m<missing VAR>2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[227.0, 10, ',', 3],[225.0, 0, '%', 3],[221.0, 2, 'K', 3],[218.0, 9, 'T', 3],[171.0, 20, '%', 2],[76.0, 23, ',', 1],[73.0, 0, ',', 1],[61.0, 23, ',', 1],[57.0, 13, ',', 1]

In
###Charge Density Modulation and Defect Ordering in Na$_x$MnBi$_y$ magnetic semimetal|Aaron Wegner,Despina Louca,Keith Taddei,Joerg Neuefeind###
(1132435, 1132435)
 In crystals with a large MR, a close toroom temperature Ts is observed with q<missing VAR>1 appearing first, followed byq<missing VAR>2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[234.0, 10, ',', 4],[232.0, 0, '%', 4],[228.0, 2, 'K', 4],[225.0, 9, 'T', 4],[178.0, 20, '%', 3],[83.0, 23, ',', 2],[80.0, 0, ',', 2],[68.0, 23, ',', 2],[64.0, 13, ',', 2]

In
###Charge Density Modulation and Defect Ordering in Na$_x$MnBi$_y$ magnetic semimetal|Aaron Wegner,Despina Louca,Keith Taddei,Joerg Neuefeind###
(1132486, 1132486)
 In crystals with low MR however, Ts is much lower and only q<missing VAR>1 isobserved.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[285.0, 10, ',', 5],[283.0, 0, '%', 5],[279.0, 2, 'K', 5],[276.0, 9, 'T', 5],[229.0, 20, '%', 4],[134.0, 23, ',', 3],[131.0, 0, ',', 3],[119.0, 23, ',', 3],[115.0, 13, ',', 3]

In
###Spin-accumulation induced magnetic texture in a metal-insulator bilayer|Dion M. F. Hartmann,Andreas Rückriegel,Rembert A. Duine###
(1132630, 1132630)
 In particular,we focus on arbitary angles between the spin accumulation and the easy-axis ofthe magnetic insulator.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Ultrafast Dynamical Lifshitz Transition|Samuel Beaulieu,Shuo Dong,Nicolas Tancogne-Dejean,Maciej Dendzik,Tommaso Pincelli,Julian Maklar,R. Patrick Xian,Michael A. Sentef,Martin Wolf,Angel Rubio,Laurenz Rettig,Ralph Ernstorfer###
(1133150, 1133150)
 Combining time-resolved multidimensional photoemissionspectroscopy with state-of-the-art TDDFT<missing VAR>U simulations, we introduce a novelscheme for driving an ultrafast Lifshitz transition in the correlated type-IIWeyl semimetal Tmathrmd-MoTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

U
###Ultrafast Dynamical Lifshitz Transition|Samuel Beaulieu,Shuo Dong,Nicolas Tancogne-Dejean,Maciej Dendzik,Tommaso Pincelli,Julian Maklar,R. Patrick Xian,Michael A. Sentef,Martin Wolf,Angel Rubio,Laurenz Rettig,Ralph Ernstorfer###
(1133152, 1133152)
 Combining time-resolved multidimensional photoemissionspectroscopy with state-of-the-art TDDFT<missing VAR>U simulations, we introduce a novelscheme for driving an ultrafast Lifshitz transition in the correlated type-IIWeyl semimetal Tmathrmd-MoTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Ultrafast Dynamical Lifshitz Transition|Samuel Beaulieu,Shuo Dong,Nicolas Tancogne-Dejean,Maciej Dendzik,Tommaso Pincelli,Julian Maklar,R. Patrick Xian,Michael A. Sentef,Martin Wolf,Angel Rubio,Laurenz Rettig,Ralph Ernstorfer###
(1133188, 1133189)
 Combining time-resolved multidimensional photoemissionspectroscopy with state-of-the-art TDDFT<missing VAR>U simulations, we introduce a novelscheme for driving an ultrafast Lifshitz transition in the correlated type-IIWeyl semimetal Tmathrmd-MoTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoTe2
###Ultrafast Dynamical Lifshitz Transition|Samuel Beaulieu,Shuo Dong,Nicolas Tancogne-Dejean,Maciej Dendzik,Tommaso Pincelli,Julian Maklar,R. Patrick Xian,Michael A. Sentef,Martin Wolf,Angel Rubio,Laurenz Rettig,Ralph Ernstorfer###
(1133200, 1133202)
 Combining time-resolved multidimensional photoemissionspectroscopy with state-of-the-art TDDFT<missing VAR>U simulations, we introduce a novelscheme for driving an ultrafast Lifshitz transition in the correlated type-IIWeyl semimetal Tmathrmd-MoTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PrBaCo2O5.5
###Origin of magnetovolume effect in a cobaltite|Ping Miao,Zhijian Tan,Sanghyun Lee,Yoshihisa Ishikawa,Shuki Torii,Masao Yonemura,Akihiro Koda,Kazuki Komatsu,Shinichi Machida,Asami Sano-Furukawa,Takanori Hattori,Xiaohuan Lin,Kuo Li,Takashi Mochiku,Ryosuke Kikuchi,Chizuru Kawashima,Hiroki Takahashi,Qingzhen Huang,Shinichi Itoh,Ryosuke Kadono,Yingxia Wang,Feng Pan,Kunihiko Yamauchi,Takashi Kamiyama###
(1133610, 1133615)
 The layered perovskite PrBaCo2O5.5x<missing VAR> demonstrates a strong negative thermalexpansion (NTE) which holds potential for being fabricated into composites withzero thermal expansion.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5789473684210527,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.21052631578947367,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.10526315789473684,0,0,0.10526315789473684,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Origin of magnetovolume effect in a cobaltite|Ping Miao,Zhijian Tan,Sanghyun Lee,Yoshihisa Ishikawa,Shuki Torii,Masao Yonemura,Akihiro Koda,Kazuki Komatsu,Shinichi Machida,Asami Sano-Furukawa,Takanori Hattori,Xiaohuan Lin,Kuo Li,Takashi Mochiku,Ryosuke Kikuchi,Chizuru Kawashima,Hiroki Takahashi,Qingzhen Huang,Shinichi Itoh,Ryosuke Kadono,Yingxia Wang,Feng Pan,Kunihiko Yamauchi,Takashi Kamiyama###
(1133632, 1133632)
 The layered perovskite PrBaCo2O5.5x<missing VAR> demonstrates a strong negative thermalexpansion (NTE) which holds potential for being fabricated into composites withzero thermal expansion.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Origin of magnetovolume effect in a cobaltite|Ping Miao,Zhijian Tan,Sanghyun Lee,Yoshihisa Ishikawa,Shuki Torii,Masao Yonemura,Akihiro Koda,Kazuki Komatsu,Shinichi Machida,Asami Sano-Furukawa,Takanori Hattori,Xiaohuan Lin,Kuo Li,Takashi Mochiku,Ryosuke Kikuchi,Chizuru Kawashima,Hiroki Takahashi,Qingzhen Huang,Shinichi Itoh,Ryosuke Kadono,Yingxia Wang,Feng Pan,Kunihiko Yamauchi,Takashi Kamiyama###
(1133665, 1133665)
 The NTE was found to be intimately associated with thespontaneous magnetic ordering, known as magnetovolume effect (MVE).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PrBaCo2O5.5
###Origin of magnetovolume effect in a cobaltite|Ping Miao,Zhijian Tan,Sanghyun Lee,Yoshihisa Ishikawa,Shuki Torii,Masao Yonemura,Akihiro Koda,Kazuki Komatsu,Shinichi Machida,Asami Sano-Furukawa,Takanori Hattori,Xiaohuan Lin,Kuo Li,Takashi Mochiku,Ryosuke Kikuchi,Chizuru Kawashima,Hiroki Takahashi,Qingzhen Huang,Shinichi Itoh,Ryosuke Kadono,Yingxia Wang,Feng Pan,Kunihiko Yamauchi,Takashi Kamiyama###
(1133735, 1133740)
 Here wereport with compelling evidences that the continuous-like MVE in PrBaCo2O5.5x<missing VAR>is intrinsically of discontinuous character, originating from anmagnetoelectric transition from an antiferromagnetic insulating large-volume(AFIL<missing VAR>V) phase to a ferromagnetic metallic small-volume (FM<missing VAR>SV) phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5789473684210527,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.21052631578947367,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.10526315789473684,0,0,0.10526315789473684,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FI
###Origin of magnetovolume effect in a cobaltite|Ping Miao,Zhijian Tan,Sanghyun Lee,Yoshihisa Ishikawa,Shuki Torii,Masao Yonemura,Akihiro Koda,Kazuki Komatsu,Shinichi Machida,Asami Sano-Furukawa,Takanori Hattori,Xiaohuan Lin,Kuo Li,Takashi Mochiku,Ryosuke Kikuchi,Chizuru Kawashima,Hiroki Takahashi,Qingzhen Huang,Shinichi Itoh,Ryosuke Kadono,Yingxia Wang,Feng Pan,Kunihiko Yamauchi,Takashi Kamiyama###
(1133781, 1133782)
 Here wereport with compelling evidences that the continuous-like MVE in PrBaCo2O5.5x<missing VAR>is intrinsically of discontinuous character, originating from anmagnetoelectric transition from an antiferromagnetic insulating large-volume(AFIL<missing VAR>V) phase to a ferromagnetic metallic small-volume (FM<missing VAR>SV) phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Origin of magnetovolume effect in a cobaltite|Ping Miao,Zhijian Tan,Sanghyun Lee,Yoshihisa Ishikawa,Shuki Torii,Masao Yonemura,Akihiro Koda,Kazuki Komatsu,Shinichi Machida,Asami Sano-Furukawa,Takanori Hattori,Xiaohuan Lin,Kuo Li,Takashi Mochiku,Ryosuke Kikuchi,Chizuru Kawashima,Hiroki Takahashi,Qingzhen Huang,Shinichi Itoh,Ryosuke Kadono,Yingxia Wang,Feng Pan,Kunihiko Yamauchi,Takashi Kamiyama###
(1133784, 1133784)
 Here wereport with compelling evidences that the continuous-like MVE in PrBaCo2O5.5x<missing VAR>is intrinsically of discontinuous character, originating from anmagnetoelectric transition from an antiferromagnetic insulating large-volume(AFIL<missing VAR>V) phase to a ferromagnetic metallic small-volume (FM<missing VAR>SV) phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Origin of magnetovolume effect in a cobaltite|Ping Miao,Zhijian Tan,Sanghyun Lee,Yoshihisa Ishikawa,Shuki Torii,Masao Yonemura,Akihiro Koda,Kazuki Komatsu,Shinichi Machida,Asami Sano-Furukawa,Takanori Hattori,Xiaohuan Lin,Kuo Li,Takashi Mochiku,Ryosuke Kikuchi,Chizuru Kawashima,Hiroki Takahashi,Qingzhen Huang,Shinichi Itoh,Ryosuke Kadono,Yingxia Wang,Feng Pan,Kunihiko Yamauchi,Takashi Kamiyama###
(1133802, 1133802)
 Here wereport with compelling evidences that the continuous-like MVE in PrBaCo2O5.5x<missing VAR>is intrinsically of discontinuous character, originating from anmagnetoelectric transition from an antiferromagnetic insulating large-volume(AFIL<missing VAR>V) phase to a ferromagnetic metallic small-volume (FM<missing VAR>SV) phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Origin of magnetovolume effect in a cobaltite|Ping Miao,Zhijian Tan,Sanghyun Lee,Yoshihisa Ishikawa,Shuki Torii,Masao Yonemura,Akihiro Koda,Kazuki Komatsu,Shinichi Machida,Asami Sano-Furukawa,Takanori Hattori,Xiaohuan Lin,Kuo Li,Takashi Mochiku,Ryosuke Kikuchi,Chizuru Kawashima,Hiroki Takahashi,Qingzhen Huang,Shinichi Itoh,Ryosuke Kadono,Yingxia Wang,Feng Pan,Kunihiko Yamauchi,Takashi Kamiyama###
(1133805, 1133805)
 Here wereport with compelling evidences that the continuous-like MVE in PrBaCo2O5.5x<missing VAR>is intrinsically of discontinuous character, originating from anmagnetoelectric transition from an antiferromagnetic insulating large-volume(AFIL<missing VAR>V) phase to a ferromagnetic metallic small-volume (FM<missing VAR>SV) phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Origin of magnetovolume effect in a cobaltite|Ping Miao,Zhijian Tan,Sanghyun Lee,Yoshihisa Ishikawa,Shuki Torii,Masao Yonemura,Akihiro Koda,Kazuki Komatsu,Shinichi Machida,Asami Sano-Furukawa,Takanori Hattori,Xiaohuan Lin,Kuo Li,Takashi Mochiku,Ryosuke Kikuchi,Chizuru Kawashima,Hiroki Takahashi,Qingzhen Huang,Shinichi Itoh,Ryosuke Kadono,Yingxia Wang,Feng Pan,Kunihiko Yamauchi,Takashi Kamiyama###
(1133866, 1133866)
 In contrast to the well-known ME such as colossalmagnetoresistance and multiferroic effect which involve symmetry breaking ofcrystal structure, the ME in the cobaltite is purely isostructural.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Origin of magnetovolume effect in a cobaltite|Ping Miao,Zhijian Tan,Sanghyun Lee,Yoshihisa Ishikawa,Shuki Torii,Masao Yonemura,Akihiro Koda,Kazuki Komatsu,Shinichi Machida,Asami Sano-Furukawa,Takanori Hattori,Xiaohuan Lin,Kuo Li,Takashi Mochiku,Ryosuke Kikuchi,Chizuru Kawashima,Hiroki Takahashi,Qingzhen Huang,Shinichi Itoh,Ryosuke Kadono,Yingxia Wang,Feng Pan,Kunihiko Yamauchi,Takashi Kamiyama###
(1133960, 1133960)
 Ourdiscovery provides a new pathway to realizing the ME as well as the NTE, whichmay find applications in new techniques.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

UTe2
###Multiple Superconducting Phases and Unusual Enhancement of the Upper Critical Field in UTe2|Dai Aoki,Fuminori Honda,Georg Knebel,Daniel Braithwaite,Ai Nakamura,DeXin Li,Yoshiya Homma,Yusei Shimizu,Yoshiki J. Sato,Jean-Pascal Brison,Jacques Flouquet###
(1134013, 1134015)
Multiple Superconducting Phases and Unusual Enhancement of the Upper Critical Field in UTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Multiple Superconducting Phases and Unusual Enhancement of the Upper Critical Field in UTe2|Dai Aoki,Fuminori Honda,Georg Knebel,Daniel Braithwaite,Ai Nakamura,DeXin Li,Yoshiya Homma,Yusei Shimizu,Yoshiki J. Sato,Jean-Pascal Brison,Jacques Flouquet###
(1134023, 1134023)
 We performed AC calorimetry and magnetoresistance measurements under pressurefor H  a-axis (easy-magnetization axis) in the novel heavy-fermionsuperconductor UTe2.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Multiple Superconducting Phases and Unusual Enhancement of the Upper Critical Field in UTe2|Dai Aoki,Fuminori Honda,Georg Knebel,Daniel Braithwaite,Ai Nakamura,DeXin Li,Yoshiya Homma,Yusei Shimizu,Yoshiki J. Sato,Jean-Pascal Brison,Jacques Flouquet###
(1134040, 1134040)
 We performed AC calorimetry and magnetoresistance measurements under pressurefor H  a-axis (easy-magnetization axis) in the novel heavy-fermionsuperconductor UTe2.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

UTe2
###Multiple Superconducting Phases and Unusual Enhancement of the Upper Critical Field in UTe2|Dai Aoki,Fuminori Honda,Georg Knebel,Daniel Braithwaite,Ai Nakamura,DeXin Li,Yoshiya Homma,Yusei Shimizu,Yoshiki J. Sato,Jean-Pascal Brison,Jacques Flouquet###
(1134068, 1134070)
 We performed AC calorimetry and magnetoresistance measurements under pressurefor H  a-axis (easy-magnetization axis) in the novel heavy-fermionsuperconductor UTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Multiple Superconducting Phases and Unusual Enhancement of the Upper Critical Field in UTe2|Dai Aoki,Fuminori Honda,Georg Knebel,Daniel Braithwaite,Ai Nakamura,DeXin Li,Yoshiya Homma,Yusei Shimizu,Yoshiki J. Sato,Jean-Pascal Brison,Jacques Flouquet###
(1134112, 1134112)
The (H,T) phase diagram of superconductivity under pressure displays an abruptincrease of the upper critical field (Hc2) at low temperature and in the highfield region, and a strong convex curvature of Hc2 at high temperature.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SF
###Monitoring of the formation of strontium molybdate intergrain tunneling barriers in strontium ferromolybdate|G. Suchaneck,N. Kalanda,E. Artsiukh,M. Yarmolich,N. A. Sobolev###
(1134368, 1134369)
 This work is a contribution to the understanding of the electricalresistivity in strontium ferromolybdate (SFM<missing VAR>O) ceramics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Monitoring of the formation of strontium molybdate intergrain tunneling barriers in strontium ferromolybdate|G. Suchaneck,N. Kalanda,E. Artsiukh,M. Yarmolich,N. A. Sobolev###
(1134371, 1134371)
 This work is a contribution to the understanding of the electricalresistivity in strontium ferromolybdate (SFM<missing VAR>O) ceramics.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrMoO4
###Monitoring of the formation of strontium molybdate intergrain tunneling barriers in strontium ferromolybdate|G. Suchaneck,N. Kalanda,E. Artsiukh,M. Yarmolich,N. A. Sobolev###
(1134404, 1134407)
 It demonstrates thatan appropriate thermal treatment leads to the formation of dielectric SrMoO4shells at the surface of SFM<missing VAR>O nanograins.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SF
###Monitoring of the formation of strontium molybdate intergrain tunneling barriers in strontium ferromolybdate|G. Suchaneck,N. Kalanda,E. Artsiukh,M. Yarmolich,N. A. Sobolev###
(1134420, 1134421)
 It demonstrates thatan appropriate thermal treatment leads to the formation of dielectric SrMoO4shells at the surface of SFM<missing VAR>O nanograins.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Monitoring of the formation of strontium molybdate intergrain tunneling barriers in strontium ferromolybdate|G. Suchaneck,N. Kalanda,E. Artsiukh,M. Yarmolich,N. A. Sobolev###
(1134423, 1134423)
 It demonstrates thatan appropriate thermal treatment leads to the formation of dielectric SrMoO4shells at the surface of SFM<missing VAR>O nanograins.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Monitoring of the formation of strontium molybdate intergrain tunneling barriers in strontium ferromolybdate|G. Suchaneck,N. Kalanda,E. Artsiukh,M. Yarmolich,N. A. Sobolev###
(1134428, 1134428)
 In samples without SrMoO4 shells, thesign of the temperature coefficient of resistance changes with increasingtemperature from negative at very low temperature to positive at highertemperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrMoO4
###Monitoring of the formation of strontium molybdate intergrain tunneling barriers in strontium ferromolybdate|G. Suchaneck,N. Kalanda,E. Artsiukh,M. Yarmolich,N. A. Sobolev###
(1134434, 1134437)
 In samples without SrMoO4 shells, thesign of the temperature coefficient of resistance changes with increasingtemperature from negative at very low temperature to positive at highertemperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrMoO4
###Monitoring of the formation of strontium molybdate intergrain tunneling barriers in strontium ferromolybdate|G. Suchaneck,N. Kalanda,E. Artsiukh,M. Yarmolich,N. A. Sobolev###
(1134507, 1134510)
 Samples exhibiting a negative temperature coefficient containSrMoO4 shells and demonstrate a behavior of the resistivity that can bedescribed in terms of the fluctuation-induced tunneling model, and near roomtemperature the conductivity mechanism converts to a variable-range hoppingone.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbSe2
###Nodal and nematic superconducting phases in NbSe2 monolayers from competing superconducting channels|Chang-woo Cho,Jian Lyu,Liheng An,Tianyi Han,Kwan To Lo,Cheuk Yin Ng,Jiaqi Hu,Yuxiang Gao,Gaomin Li,Mingyuan Huang,Ning Wang,Jörg Schmalian,Rolf Lortz###
(1134660, 1134662)
Nodal and nematic superconducting phases in NbSe2 monolayers from competing superconducting channels.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 2, 'H', 1],[245.0, 2, ',', 5]

NbSe2
###Nodal and nematic superconducting phases in NbSe2 monolayers from competing superconducting channels|Chang-woo Cho,Jian Lyu,Liheng An,Tianyi Han,Kwan To Lo,Cheuk Yin Ng,Jiaqi Hu,Yuxiang Gao,Gaomin Li,Mingyuan Huang,Ning Wang,Jörg Schmalian,Rolf Lortz###
(1134684, 1134686)
 Transition metal dichalcogenides like 2H-NbSe2 in their two-dimensional (2D)form exhibit Ising superconductivity with the quasiparticle spins are firmlypinned in the direction perpendicular to the basal plane.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 2, 'H', 0],[221.0, 2, ',', 4]

NbSe2
###Nodal and nematic superconducting phases in NbSe2 monolayers from competing superconducting channels|Chang-woo Cho,Jian Lyu,Liheng An,Tianyi Han,Kwan To Lo,Cheuk Yin Ng,Jiaqi Hu,Yuxiang Gao,Gaomin Li,Mingyuan Huang,Ning Wang,Jörg Schmalian,Rolf Lortz###
(1134932, 1134934)
 We demonstrate that in NbSe2 such unconventionalsuperconducting states can arise from the presence of several competingsuperconducting channels.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[250.0, 2, 'H', 5],[25.0, 2, ',', 1]

PtGa
###Quantum oscillations and electronic structure in the large-Chern number topological chiral semimetal PtGa|Sheng Xu,Liqin Zhou,Xiao-Yan Wang,Huan Wang,Jun-Fa lin,Xiang-Yu Zeng,Peng Cheng,Hongming Weng,Tian-Long Xia###
(1135001, 1135002)
Quantum oscillations and electronic structure in the large-Chern number topological chiral semimetal PtGa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PtGa
###Quantum oscillations and electronic structure in the large-Chern number topological chiral semimetal PtGa|Sheng Xu,Liqin Zhou,Xiao-Yan Wang,Huan Wang,Jun-Fa lin,Xiang-Yu Zeng,Peng Cheng,Hongming Weng,Tian-Long Xia###
(1135049, 1135050)
 We report the magnetoresistance(MR), de Haas-van Alphen (d<missing VAR>HvA) oscillationsand the electronic structures of single crystal PtGa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Quantum oscillations and electronic structure in the large-Chern number topological chiral semimetal PtGa|Sheng Xu,Liqin Zhou,Xiao-Yan Wang,Huan Wang,Jun-Fa lin,Xiang-Yu Zeng,Peng Cheng,Hongming Weng,Tian-Long Xia###
(1135075, 1135075)
 The large unsaturated MRis observed with the magnetic field B//[111].
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Quantum oscillations and electronic structure in the large-Chern number topological chiral semimetal PtGa|Sheng Xu,Liqin Zhou,Xiao-Yan Wang,Huan Wang,Jun-Fa lin,Xiang-Yu Zeng,Peng Cheng,Hongming Weng,Tian-Long Xia###
(1135094, 1135094)
 Evident d<missing VAR>HvA oscillations withB//[001] configuration have been observed, from which twelve fundamentalfrequencies are extracted and the spin-orbit coupling effect (SOC) induced bandsplitting is revealed.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(SOC)
###Quantum oscillations and electronic structure in the large-Chern number topological chiral semimetal PtGa|Sheng Xu,Liqin Zhou,Xiao-Yan Wang,Huan Wang,Jun-Fa lin,Xiang-Yu Zeng,Peng Cheng,Hongming Weng,Tian-Long Xia###
(1135137, 1135141)
 Evident d<missing VAR>HvA oscillations withB//[001] configuration have been observed, from which twelve fundamentalfrequencies are extracted and the spin-orbit coupling effect (SOC) induced bandsplitting is revealed.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Quantum oscillations and electronic structure in the large-Chern number topological chiral semimetal PtGa|Sheng Xu,Liqin Zhou,Xiao-Yan Wang,Huan Wang,Jun-Fa lin,Xiang-Yu Zeng,Peng Cheng,Hongming Weng,Tian-Long Xia###
(1135196, 1135196)
 The light cyclotron effective masses are extracted fromthe fitting by the thermal damping term of the Lifshitz-Kosevich (L<missing VAR>K) formula.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F1/F3
###Quantum oscillations and electronic structure in the large-Chern number topological chiral semimetal PtGa|Sheng Xu,Liqin Zhou,Xiao-Yan Wang,Huan Wang,Jun-Fa lin,Xiang-Yu Zeng,Peng Cheng,Hongming Weng,Tian-Long Xia###
(1135233, 1135237)
Combining with the calculated frequencies from the first-principlescalculations, the d<missing VAR>HvA frequencies F1/F3 and F11/F12 areconfirmed to originate from the electron pockets at Gamma and R<missing VAR>,respectively.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

F11/F12
###Quantum oscillations and electronic structure in the large-Chern number topological chiral semimetal PtGa|Sheng Xu,Liqin Zhou,Xiao-Yan Wang,Huan Wang,Jun-Fa lin,Xiang-Yu Zeng,Peng Cheng,Hongming Weng,Tian-Long Xia###
(1135241, 1135245)
Combining with the calculated frequencies from the first-principlescalculations, the d<missing VAR>HvA frequencies F1/F3 and F11/F12 areconfirmed to originate from the electron pockets at Gamma and R<missing VAR>,respectively.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

SW
###Quantum oscillations and electronic structure in the large-Chern number topological chiral semimetal PtGa|Sheng Xu,Liqin Zhou,Xiao-Yan Wang,Huan Wang,Jun-Fa lin,Xiang-Yu Zeng,Peng Cheng,Hongming Weng,Tian-Long Xia###
(1135303, 1135304)
 The first-principles calculations also reveal the existence ofspin-3/2 R<missing VAR>SW fermion and time-reversal (TR) doubling of the spin-1 excitationat Gamma and R<missing VAR> with large Chern number pm4 when SOC is included.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SOC
###Quantum oscillations and electronic structure in the large-Chern number topological chiral semimetal PtGa|Sheng Xu,Liqin Zhou,Xiao-Yan Wang,Huan Wang,Jun-Fa lin,Xiang-Yu Zeng,Peng Cheng,Hongming Weng,Tian-Long Xia###
(1135353, 1135355)
 The first-principles calculations also reveal the existence ofspin-3/2 R<missing VAR>SW fermion and time-reversal (TR) doubling of the spin-1 excitationat Gamma and R<missing VAR> with large Chern number pm4 when SOC is included.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F/N
###A way to measure electron spin-flipping at F/N interfaces and application to Co/Cu|B. Dassonneville,R. Acharyya,H. Y. T. Nguyen,R. Loloee,W. P. Pratt Jr.,J. Bass###
(1135386, 1135388)
A way to measure electron spin-flipping at F/N interfaces and application to Co/Cu.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[142.0, 20, 'nm', 2],[267.0, 0, ',', 5]

Co/Cu
###A way to measure electron spin-flipping at F/N interfaces and application to Co/Cu|B. Dassonneville,R. Acharyya,H. Y. T. Nguyen,R. Loloee,W. P. Pratt Jr.,J. Bass###
(1135398, 1135400)
A way to measure electron spin-flipping at F/N interfaces and application to Co/Cu.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[130.0, 20, 'nm', 2],[255.0, 0, ',', 5]

(CPP)
###A way to measure electron spin-flipping at F/N interfaces and application to Co/Cu|B. Dassonneville,R. Acharyya,H. Y. T. Nguyen,R. Loloee,W. P. Pratt Jr.,J. Bass###
(1135424, 1135428)
 We describe a technique, using the current-perpendicular-to-plane (CPP)geometry, to measure the parameter delta(F/N), characterizing flipping ofelectron spins at a ferromagnetic/non-magnetic (F/N) metallic interface.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 20, 'nm', 1],[227.0, 0, ',', 4]

N
###A way to measure electron spin-flipping at F/N interfaces and application to Co/Cu|B. Dassonneville,R. Acharyya,H. Y. T. Nguyen,R. Loloee,W. P. Pratt Jr.,J. Bass###
(1135446, 1135446)
 We describe a technique, using the current-perpendicular-to-plane (CPP)geometry, to measure the parameter delta(F/N), characterizing flipping ofelectron spins at a ferromagnetic/non-magnetic (F/N) metallic interface.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 20, 'nm', 1],[209.0, 0, ',', 4]

N
###A way to measure electron spin-flipping at F/N interfaces and application to Co/Cu|B. Dassonneville,R. Acharyya,H. Y. T. Nguyen,R. Loloee,W. P. Pratt Jr.,J. Bass###
(1135474, 1135474)
 We describe a technique, using the current-perpendicular-to-plane (CPP)geometry, to measure the parameter delta(F/N), characterizing flipping ofelectron spins at a ferromagnetic/non-magnetic (F/N) metallic interface.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 20, 'nm', 1],[181.0, 0, ',', 4]

CPP
###A way to measure electron spin-flipping at F/N interfaces and application to Co/Cu|B. Dassonneville,R. Acharyya,H. Y. T. Nguyen,R. Loloee,W. P. Pratt Jr.,J. Bass###
(1135493, 1135495)
 Thetechnique involves measuring the CPP magnetoresistance of a sample containing aferromagnetically coupled [F/N]x n multilayer embedded within the 20 nm thickcentral Cu layer of a symmetric Py-based, double exchange-biased spin-valve.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 20, 'nm', 0],[160.0, 0, ',', 3]

N
###A way to measure electron spin-flipping at F/N interfaces and application to Co/Cu|B. Dassonneville,R. Acharyya,H. Y. T. Nguyen,R. Loloee,W. P. Pratt Jr.,J. Bass###
(1135517, 1135517)
 Thetechnique involves measuring the CPP magnetoresistance of a sample containing aferromagnetically coupled [F/N]x n multilayer embedded within the 20 nm thickcentral Cu layer of a symmetric Py-based, double exchange-biased spin-valve.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 20, 'nm', 0],[138.0, 0, ',', 3]

Cu
###A way to measure electron spin-flipping at F/N interfaces and application to Co/Cu|B. Dassonneville,R. Acharyya,H. Y. T. Nguyen,R. Loloee,W. P. Pratt Jr.,J. Bass###
(1135537, 1135537)
 Thetechnique involves measuring the CPP magnetoresistance of a sample containing aferromagnetically coupled [F/N]x n multilayer embedded within the 20 nm thickcentral Cu layer of a symmetric Py-based, double exchange-biased spin-valve.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 20, 'nm', 0],[118.0, 0, ',', 3]

N
###A way to measure electron spin-flipping at F/N interfaces and application to Co/Cu|B. Dassonneville,R. Acharyya,H. Y. T. Nguyen,R. Loloee,W. P. Pratt Jr.,J. Bass###
(1135574, 1135574)
 Tofocus on delta(F/N), the F- and N-layers are made thin compared to theirspin-diffusion lengths.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 20, 'nm', 1],[81.0, 0, ',', 2]

F
###A way to measure electron spin-flipping at F/N interfaces and application to Co/Cu|B. Dassonneville,R. Acharyya,H. Y. T. Nguyen,R. Loloee,W. P. Pratt Jr.,J. Bass###
(1135580, 1135580)
 Tofocus on delta(F/N), the F- and N-layers are made thin compared to theirspin-diffusion lengths.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 20, 'nm', 1],[75.0, 0, ',', 2]

N
###A way to measure electron spin-flipping at F/N interfaces and application to Co/Cu|B. Dassonneville,R. Acharyya,H. Y. T. Nguyen,R. Loloee,W. P. Pratt Jr.,J. Bass###
(1135585, 1135585)
 Tofocus on delta(F/N), the F- and N-layers are made thin compared to theirspin-diffusion lengths.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 20, 'nm', 1],[70.0, 0, ',', 2]

F/N
###A way to measure electron spin-flipping at F/N interfaces and application to Co/Cu|B. Dassonneville,R. Acharyya,H. Y. T. Nguyen,R. Loloee,W. P. Pratt Jr.,J. Bass###
(1135619, 1135621)
 We test the technique using F/N  Co/Cu.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[89.0, 20, 'nm', 2],[34.0, 0, ',', 1]

Co/Cu
###A way to measure electron spin-flipping at F/N interfaces and application to Co/Cu|B. Dassonneville,R. Acharyya,H. Y. T. Nguyen,R. Loloee,W. P. Pratt Jr.,J. Bass###
(1135624, 1135626)
 We test the technique using F/N  Co/Cu.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[94.0, 20, 'nm', 2],[29.0, 0, ',', 1]

Cu
###A way to measure electron spin-flipping at F/N interfaces and application to Co/Cu|B. Dassonneville,R. Acharyya,H. Y. T. Nguyen,R. Loloee,W. P. Pratt Jr.,J. Bass###
(1135651, 1135651)
 Analysing withno adjustable parameters, gives inconsistency with delta(Co/Cu)  0, butconsistency with our prior value of delta(Co/Cu)  0.25 (/- 0.1).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 20, 'nm', 3],[4.0, 0, ',', 0]

Cu
###A way to measure electron spin-flipping at F/N interfaces and application to Co/Cu|B. Dassonneville,R. Acharyya,H. Y. T. Nguyen,R. Loloee,W. P. Pratt Jr.,J. Bass###
(1135677, 1135677)
 Analysing withno adjustable parameters, gives inconsistency with delta(Co/Cu)  0, butconsistency with our prior value of delta(Co/Cu)  0.25 (/- 0.1).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 20, 'nm', 3],[22.0, 0, ',', 0]

Cu
###A way to measure electron spin-flipping at F/N interfaces and application to Co/Cu|B. Dassonneville,R. Acharyya,H. Y. T. Nguyen,R. Loloee,W. P. Pratt Jr.,J. Bass###
(1135698, 1135698)
 Takingdelta(Co/Cu) as adjustable gives delta(Co/Cu)  0.33 (0.03/-0.08).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[168.0, 20, 'nm', 4],[43.0, 0, ',', 1]

Cu
###A way to measure electron spin-flipping at F/N interfaces and application to Co/Cu|B. Dassonneville,R. Acharyya,H. Y. T. Nguyen,R. Loloee,W. P. Pratt Jr.,J. Bass###
(1135711, 1135711)
 Takingdelta(Co/Cu) as adjustable gives delta(Co/Cu)  0.33 (0.03/-0.08).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 20, 'nm', 4],[56.0, 0, ',', 1]

As
###Magnetoresistance and localization in bosonic insulators|Markus Mueller###
(1135829, 1135829)
 As a consequence, the localization length of bosonicexcitations shrinks when the constructive interference is suppressed by amagnetic field, entailing an exponentially large positive magnetoresistance,opposite to and significantly stronger than the analogous effect in fermions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BaFe2-x
###Evolution of transport properties of BaFe2-xRuxAs2 in a wide range of isovalent Ru substitution|M. J. Eom,S. W. Na,C. Hoch,R. K. Kremer,J. S. Kim###
(1136040, 1136044)
Evolution of transport properties of BaFe2-xRuxAs2 in a wide range of isovalent Ru substitution.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

As2
###Evolution of transport properties of BaFe2-xRuxAs2 in a wide range of isovalent Ru substitution|M. J. Eom,S. W. Na,C. Hoch,R. K. Kremer,J. S. Kim###
(1136046, 1136047)
Evolution of transport properties of BaFe2-xRuxAs2 in a wide range of isovalent Ru substitution.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ru
###Evolution of transport properties of BaFe2-xRuxAs2 in a wide range of isovalent Ru substitution|M. J. Eom,S. W. Na,C. Hoch,R. K. Kremer,J. S. Kim###
(1136061, 1136061)
Evolution of transport properties of BaFe2-xRuxAs2 in a wide range of isovalent Ru substitution.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ru
###Evolution of transport properties of BaFe2-xRuxAs2 in a wide range of isovalent Ru substitution|M. J. Eom,S. W. Na,C. Hoch,R. K. Kremer,J. S. Kim###
(1136074, 1136074)
 The effects of isovalent Ru substitution at the Fe sites of BaFe2-xRuxAs2 areinvestigated by measuring resistivity and Hall coefficient on high-qualitysingle crystals in a wide range of doping (0 < x<missing VAR> < 1.4).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Evolution of transport properties of BaFe2-xRuxAs2 in a wide range of isovalent Ru substitution|M. J. Eom,S. W. Na,C. Hoch,R. K. Kremer,J. S. Kim###
(1136082, 1136082)
 The effects of isovalent Ru substitution at the Fe sites of BaFe2-xRuxAs2 areinvestigated by measuring resistivity and Hall coefficient on high-qualitysingle crystals in a wide range of doping (0 < x<missing VAR> < 1.4).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BaFe2-x
###Evolution of transport properties of BaFe2-xRuxAs2 in a wide range of isovalent Ru substitution|M. J. Eom,S. W. Na,C. Hoch,R. K. Kremer,J. S. Kim###
(1136088, 1136092)
 The effects of isovalent Ru substitution at the Fe sites of BaFe2-xRuxAs2 areinvestigated by measuring resistivity and Hall coefficient on high-qualitysingle crystals in a wide range of doping (0 < x<missing VAR> < 1.4).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

As2
###Evolution of transport properties of BaFe2-xRuxAs2 in a wide range of isovalent Ru substitution|M. J. Eom,S. W. Na,C. Hoch,R. K. Kremer,J. S. Kim###
(1136094, 1136095)
 The effects of isovalent Ru substitution at the Fe sites of BaFe2-xRuxAs2 areinvestigated by measuring resistivity and Hall coefficient on high-qualitysingle crystals in a wide range of doping (0 < x<missing VAR> < 1.4).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ru
###Evolution of transport properties of BaFe2-xRuxAs2 in a wide range of isovalent Ru substitution|M. J. Eom,S. W. Na,C. Hoch,R. K. Kremer,J. S. Kim###
(1136150, 1136150)
 Ru substitutionweakens the antiferromagnetic (AFM) order, inducing superconductivity forrelatively high doping level of 0.4 < x<missing VAR> < 0.9.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Evolution of transport properties of BaFe2-xRuxAs2 in a wide range of isovalent Ru substitution|M. J. Eom,S. W. Na,C. Hoch,R. K. Kremer,J. S. Kim###
(1136163, 1136163)
 Ru substitutionweakens the antiferromagnetic (AFM) order, inducing superconductivity forrelatively high doping level of 0.4 < x<missing VAR> < 0.9.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Evolution of transport properties of BaFe2-xRuxAs2 in a wide range of isovalent Ru substitution|M. J. Eom,S. W. Na,C. Hoch,R. K. Kremer,J. S. Kim###
(1136203, 1136203)
 Near the AFM<missing VAR> phase boundary, thetransport properties show non-Fermi-liquid-like behaviors with alinear-temperature dependence of resistivity and a strong temperaturedependence of Hall coefficient with a sign change.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Evolution of transport properties of BaFe2-xRuxAs2 in a wide range of isovalent Ru substitution|M. J. Eom,S. W. Na,C. Hoch,R. K. Kremer,J. S. Kim###
(1136363, 1136363)
 Strong dopingdependence of Hall coefficient together with a small magnetoresistance suggestthat the anomalous transport properties can be explained in terms ofanisotropic charge carrier scattering due to interband AFM<missing VAR> fluctuations ratherthan a conventional multi-band scenario.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

URu2Si2
###Details of Sample Dependence and Transport Properties of URu2Si2|Tatsuma D. Matsuda,Elena Hassinger,Dai Aoki,Valentin Taufour,Georg Knebel,Naoyuki Tateiwa,Etsuji Yamamoto,Yoshinori Haga,Yoshichika Onuki,Zachary Fisk,Jacques Flouquet###
(1136408, 1136412)
Details of Sample Dependence and Transport Properties of URu2Si2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

URu2Si2
###Details of Sample Dependence and Transport Properties of URu2Si2|Tatsuma D. Matsuda,Elena Hassinger,Dai Aoki,Valentin Taufour,Georg Knebel,Naoyuki Tateiwa,Etsuji Yamamoto,Yoshinori Haga,Yoshichika Onuki,Zachary Fisk,Jacques Flouquet###
(1136442, 1136446)
 Resistivity and specific heat measurements were performed in the low carrierunconventional superconductor URu2Si2 on various samples with very differentqualities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Details of Sample Dependence and Transport Properties of URu2Si2|Tatsuma D. Matsuda,Elena Hassinger,Dai Aoki,Valentin Taufour,Georg Knebel,Naoyuki Tateiwa,Etsuji Yamamoto,Yoshinori Haga,Yoshichika Onuki,Zachary Fisk,Jacques Flouquet###
(1136475, 1136475)
 The superconducting transition temperature (T<missing VAR>SC) and the hiddenorder transition temperature (T<missing VAR>HO) of these crystals were evaluated as afunction of the residual resistivity ratio (RRR).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Details of Sample Dependence and Transport Properties of URu2Si2|Tatsuma D. Matsuda,Elena Hassinger,Dai Aoki,Valentin Taufour,Georg Knebel,Naoyuki Tateiwa,Etsuji Yamamoto,Yoshinori Haga,Yoshichika Onuki,Zachary Fisk,Jacques Flouquet###
(1136494, 1136494)
 The superconducting transition temperature (T<missing VAR>SC) and the hiddenorder transition temperature (T<missing VAR>HO) of these crystals were evaluated as afunction of the residual resistivity ratio (RRR).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Details of Sample Dependence and Transport Properties of URu2Si2|Tatsuma D. Matsuda,Elena Hassinger,Dai Aoki,Valentin Taufour,Georg Knebel,Naoyuki Tateiwa,Etsuji Yamamoto,Yoshinori Haga,Yoshichika Onuki,Zachary Fisk,Jacques Flouquet###
(1136531, 1136531)
 In high quality singlecrystals the resistivity does not seem to follow a T<missing VAR>2 dependence above T<missing VAR>SC,indicating that the Fermi liquid regime is restricted to low temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SC
###Details of Sample Dependence and Transport Properties of URu2Si2|Tatsuma D. Matsuda,Elena Hassinger,Dai Aoki,Valentin Taufour,Georg Knebel,Naoyuki Tateiwa,Etsuji Yamamoto,Yoshinori Haga,Yoshichika Onuki,Zachary Fisk,Jacques Flouquet###
(1136566, 1136567)
 In high quality singlecrystals the resistivity does not seem to follow a T<missing VAR>2 dependence above T<missing VAR>SC,indicating that the Fermi liquid regime is restricted to low temperatures.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SC
###Details of Sample Dependence and Transport Properties of URu2Si2|Tatsuma D. Matsuda,Elena Hassinger,Dai Aoki,Valentin Taufour,Georg Knebel,Naoyuki Tateiwa,Etsuji Yamamoto,Yoshinori Haga,Yoshichika Onuki,Zachary Fisk,Jacques Flouquet###
(1136664, 1136665)
 We discuss a possible scenario concerning thedistribution of T<missing VAR>SC related with the fact that the hidden order phase is verysensitive to the pressure inhomogeneity.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Al2O3
###Giant thermoelectric effect in Al2O3 magnetic tunnel junctions|Weiwei Lin,Michel Hehn,Laurent Chaput,Béatrice Negulescu,Stéphane Andrieu,François Montaigne,Stéphane Mangin###
(1136717, 1136720)
Giant thermoelectric effect in Al2O3 magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 1, 'mV', 4]

Al2O3
###Giant thermoelectric effect in Al2O3 magnetic tunnel junctions|Weiwei Lin,Michel Hehn,Laurent Chaput,Béatrice Negulescu,Stéphane Andrieu,François Montaigne,Stéphane Mangin###
(1136820, 1136823)
 Here we report on giant magnetothermoelectric effect in Al2O3magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 1, 'mV', 1]

PN
###Neutron Reflectometer with Polarization Option at the Budapest Neutron Centre|L. Bottyán,D. G. Merkel,B. Nagy,J. Major###
(1137181, 1137182)
 The increasedinterest in magnetic thin film analytical instruments - mainly triggered by thediscovery of the giant magnetoresistance and related phenomena1 - resulted in aboom of PNR<missing VAR> studies as well as of the construction of a number of new neutronreflectometers with polarization option at neutron sources all over the world.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

IN
###Neutron Reflectometer with Polarization Option at the Budapest Neutron Centre|L. Bottyán,D. G. Merkel,B. Nagy,J. Major###
(1137280, 1137281)
Here we report on the design, construction and operation parameters and firstexample uses of the Grazing Incidence Neutron Apparatus (G<missing VAR>INA) a recentlyinstalled neutron reflectometer at the Budapest Neutron Centre (BNC), Hungary.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(BNC)
###Neutron Reflectometer with Polarization Option at the Budapest Neutron Centre|L. Bottyán,D. G. Merkel,B. Nagy,J. Major###
(1137306, 1137310)
Here we report on the design, construction and operation parameters and firstexample uses of the Grazing Incidence Neutron Apparatus (G<missing VAR>INA) a recentlyinstalled neutron reflectometer at the Budapest Neutron Centre (BNC), Hungary.
Featurization successful!
0,0,0,0,0.3333333333333333,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFeB/MgO/CoFeB
###Determination of spin-dependent Seebeck coefficients of CoFeB/MgO/CoFeB magnetic tunnel junction nanopillars|N. Liebing,S. Serrano-Guisan,K. Rott,G. Reiss,J. Langer,B. Ocker,H. W. Schumacher###
(1137338, 1137347)
Determination of spin-dependent Seebeck coefficients of CoFeB/MgO/CoFeB magnetic tunnel junction nanopillars.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[288.0, 90, '%', 6],[298.0, 1.5, 'nm', 6]

CoFeB/MgO/CoFeB
###Determination of spin-dependent Seebeck coefficients of CoFeB/MgO/CoFeB magnetic tunnel junction nanopillars|N. Liebing,S. Serrano-Guisan,K. Rott,G. Reiss,J. Langer,B. Ocker,H. W. Schumacher###
(1137385, 1137394)
 We investigate the spin-dependent Seebeck coefficient and the tunnelingmagneto thermopower of CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJ) in thepresence of thermal gradients across the MTJ.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[241.0, 90, '%', 5],[251.0, 1.5, 'nm', 5]

V/K
###Determination of spin-dependent Seebeck coefficients of CoFeB/MgO/CoFeB magnetic tunnel junction nanopillars|N. Liebing,S. Serrano-Guisan,K. Rott,G. Reiss,J. Langer,B. Ocker,H. W. Schumacher###
(1137593, 1137595)
 Based on this, largespin-dependent Seebeck coefficients of the order of (240 pm 110) muV/K arederived.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[40.0, 90, '%', 1],[50.0, 1.5, 'nm', 1]

MgO
###Determination of spin-dependent Seebeck coefficients of CoFeB/MgO/CoFeB magnetic tunnel junction nanopillars|N. Liebing,S. Serrano-Guisan,K. Rott,G. Reiss,J. Langer,B. Ocker,H. W. Schumacher###
(1137647, 1137648)
 From additional measurements on MTJs after dielectric breakdown, atunneling magneto thermopower up to 90% can be derived for 1.5 nm MgO based MTJnanopillars.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 90, '%', 0],[2.0, 1.5, 'nm', 0]

YPdBi
###Large Linear Magnetoresistance and Shubnikov-de Hass Oscillations in Single Crystals of YPdBi Heusler Topological Insulators|Wenhong Wang,Yin Du,Guizhou Xu,Xiaoming Zhang,Enke Liu,Zhongyuan Liu,Youguo Shi,Jinglan Chen,Guangheng Wu,Xixiang Zhang###
(1138360, 1138362)
Large Linear Magnetoresistance and Shubnikov-de Hass Oscillations in Single Crystals of YPdBi Heusler Topological Insulators.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 350, '%', 2],[120.0, 5, 'K', 2],[126.0, 120, '%', 2],[130.0, 300, 'K', 2],[143.0, 7, 'T', 2]

H
###Large Linear Magnetoresistance and Shubnikov-de Hass Oscillations in Single Crystals of YPdBi Heusler Topological Insulators|Wenhong Wang,Yin Du,Guizhou Xu,Xiaoming Zhang,Enke Liu,Zhongyuan Liu,Youguo Shi,Jinglan Chen,Guangheng Wu,Xixiang Zhang###
(1138405, 1138405)
 We report the observation of a large linear magnetoresistance (MR) andShubnikov-de Hass (SdH) quantum oscillations in single crystals of YPdBiHeusler topological insulators.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 350, '%', 1],[77.0, 5, 'K', 1],[83.0, 120, '%', 1],[87.0, 300, 'K', 1],[100.0, 7, 'T', 1]

YPdBi
###Large Linear Magnetoresistance and Shubnikov-de Hass Oscillations in Single Crystals of YPdBi Heusler Topological Insulators|Wenhong Wang,Yin Du,Guizhou Xu,Xiaoming Zhang,Enke Liu,Zhongyuan Liu,Youguo Shi,Jinglan Chen,Guangheng Wu,Xixiang Zhang###
(1138420, 1138422)
 We report the observation of a large linear magnetoresistance (MR) andShubnikov-de Hass (SdH) quantum oscillations in single crystals of YPdBiHeusler topological insulators.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 350, '%', 1],[60.0, 5, 'K', 1],[66.0, 120, '%', 1],[70.0, 300, 'K', 1],[83.0, 7, 'T', 1]

YPdBi
###Large Linear Magnetoresistance and Shubnikov-de Hass Oscillations in Single Crystals of YPdBi Heusler Topological Insulators|Wenhong Wang,Yin Du,Guizhou Xu,Xiaoming Zhang,Enke Liu,Zhongyuan Liu,Youguo Shi,Jinglan Chen,Guangheng Wu,Xixiang Zhang###
(1138449, 1138451)
 Owning to the successfully obtained thehigh-quality YPdBi single crystals, large non-saturating linear MR of as highas 350% at 5K and over 120% at 300 K under a moderate magnetic field of 7 T isobserved.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 350, '%', 0],[31.0, 5, 'K', 0],[37.0, 120, '%', 0],[41.0, 300, 'K', 0],[54.0, 7, 'T', 0]

In
###Large Linear Magnetoresistance and Shubnikov-de Hass Oscillations in Single Crystals of YPdBi Heusler Topological Insulators|Wenhong Wang,Yin Du,Guizhou Xu,Xiaoming Zhang,Enke Liu,Zhongyuan Liu,Youguo Shi,Jinglan Chen,Guangheng Wu,Xixiang Zhang###
(1138513, 1138513)
 In addition to the large, field-linear MR, the samples exhibitpronounced SdH quantum oscillations at low temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 350, '%', 1],[31.0, 5, 'K', 1],[25.0, 120, '%', 1],[21.0, 300, 'K', 1],[8.0, 7, 'T', 1]

H
###Large Linear Magnetoresistance and Shubnikov-de Hass Oscillations in Single Crystals of YPdBi Heusler Topological Insulators|Wenhong Wang,Yin Du,Guizhou Xu,Xiaoming Zhang,Enke Liu,Zhongyuan Liu,Youguo Shi,Jinglan Chen,Guangheng Wu,Xixiang Zhang###
(1138542, 1138542)
 In addition to the large, field-linear MR, the samples exhibitpronounced SdH quantum oscillations at low temperature.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 350, '%', 1],[60.0, 5, 'K', 1],[54.0, 120, '%', 1],[50.0, 300, 'K', 1],[37.0, 7, 'T', 1]

H
###Large Linear Magnetoresistance and Shubnikov-de Hass Oscillations in Single Crystals of YPdBi Heusler Topological Insulators|Wenhong Wang,Yin Du,Guizhou Xu,Xiaoming Zhang,Enke Liu,Zhongyuan Liu,Youguo Shi,Jinglan Chen,Guangheng Wu,Xixiang Zhang###
(1138562, 1138562)
 Analysis of the SdHdata manifests that the high-mobility bulk electron carriers dominate themagnetotransport and are responsible for the observed large linear MR in YPdBicrystals.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 350, '%', 2],[80.0, 5, 'K', 2],[74.0, 120, '%', 2],[70.0, 300, 'K', 2],[57.0, 7, 'T', 2]

YPdBi
###Large Linear Magnetoresistance and Shubnikov-de Hass Oscillations in Single Crystals of YPdBi Heusler Topological Insulators|Wenhong Wang,Yin Du,Guizhou Xu,Xiaoming Zhang,Enke Liu,Zhongyuan Liu,Youguo Shi,Jinglan Chen,Guangheng Wu,Xixiang Zhang###
(1138611, 1138613)
 Analysis of the SdHdata manifests that the high-mobility bulk electron carriers dominate themagnetotransport and are responsible for the observed large linear MR in YPdBicrystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 350, '%', 2],[129.0, 5, 'K', 2],[123.0, 120, '%', 2],[119.0, 300, 'K', 2],[106.0, 7, 'T', 2]

Ni
###Effect of annealing on the magnetic, magnetocaloric and magnetoresistance properties of Ni-Co-Mn-Sb melt spun ribbons|Roshnee Sahoo,D. M. Raj Kumar,D. Arvindha Babu,K. G. Suresh,A. K. Nigam,M. Manivel Raja###
(1138699, 1138699)
Effect of annealing on the magnetic, magnetocaloric and magnetoresistance properties of Ni-Co-Mn-Sb melt spun ribbons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Effect of annealing on the magnetic, magnetocaloric and magnetoresistance properties of Ni-Co-Mn-Sb melt spun ribbons|Roshnee Sahoo,D. M. Raj Kumar,D. Arvindha Babu,K. G. Suresh,A. K. Nigam,M. Manivel Raja###
(1138701, 1138701)
Effect of annealing on the magnetic, magnetocaloric and magnetoresistance properties of Ni-Co-Mn-Sb melt spun ribbons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Effect of annealing on the magnetic, magnetocaloric and magnetoresistance properties of Ni-Co-Mn-Sb melt spun ribbons|Roshnee Sahoo,D. M. Raj Kumar,D. Arvindha Babu,K. G. Suresh,A. K. Nigam,M. Manivel Raja###
(1138703, 1138703)
Effect of annealing on the magnetic, magnetocaloric and magnetoresistance properties of Ni-Co-Mn-Sb melt spun ribbons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sb
###Effect of annealing on the magnetic, magnetocaloric and magnetoresistance properties of Ni-Co-Mn-Sb melt spun ribbons|Roshnee Sahoo,D. M. Raj Kumar,D. Arvindha Babu,K. G. Suresh,A. K. Nigam,M. Manivel Raja###
(1138705, 1138705)
Effect of annealing on the magnetic, magnetocaloric and magnetoresistance properties of Ni-Co-Mn-Sb melt spun ribbons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni46Co4Mn38Sb12
###Effect of annealing on the magnetic, magnetocaloric and magnetoresistance properties of Ni-Co-Mn-Sb melt spun ribbons|Roshnee Sahoo,D. M. Raj Kumar,D. Arvindha Babu,K. G. Suresh,A. K. Nigam,M. Manivel Raja###
(1138733, 1138740)
 The structural, magnetic, magnetocaloric and magnetotransport properties ofNi46Co4Mn38Sb12 melt spun ribbons have been systematically investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.38,0,0.04,0.46,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.12,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B2
###Effect of annealing on the magnetic, magnetocaloric and magnetoresistance properties of Ni-Co-Mn-Sb melt spun ribbons|Roshnee Sahoo,D. M. Raj Kumar,D. Arvindha Babu,K. G. Suresh,A. K. Nigam,M. Manivel Raja###
(1138764, 1138765)
 Thepartially ordered B2 phase of the as-spun ribbon transforms to fully orderedL<missing VAR>21 phase upon annealing, which signifies a considerable change of the atomicordering in the system.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SmB6
###Weak Antilocalization and Linear Magnetoresistance in The Surface State of SmB6|S. Thomas,D. J. Kim,S. B. Chung,T. Grant,Z. Fisk,Jing Xia###
(1139451, 1139453)
Weak Antilocalization and Linear Magnetoresistance in The Surface State of SmB6.
Featurization terminated normally.
0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SmB6
###Weak Antilocalization and Linear Magnetoresistance in The Surface State of SmB6|S. Thomas,D. J. Kim,S. B. Chung,T. Grant,Z. Fisk,Jing Xia###
(1139464, 1139466)
 Strongly correlated Kondo insulator SmB6 is known for its peculiar lowtemperature residual conduction, which has recently been demonstrated to arisefrom a robust metallic surface state, as predicted by the theory of topologicalKondo insulator (T<missing VAR>KI).
Featurization terminated normally.
0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Weak Antilocalization and Linear Magnetoresistance in The Surface State of SmB6|S. Thomas,D. J. Kim,S. B. Chung,T. Grant,Z. Fisk,Jing Xia###
(1139538, 1139538)
 Strongly correlated Kondo insulator SmB6 is known for its peculiar lowtemperature residual conduction, which has recently been demonstrated to arisefrom a robust metallic surface state, as predicted by the theory of topologicalKondo insulator (T<missing VAR>KI).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Weak Antilocalization and Linear Magnetoresistance in The Surface State of SmB6|S. Thomas,D. J. Kim,S. B. Chung,T. Grant,Z. Fisk,Jing Xia###
(1139642, 1139642)
Here we report metallic conduction of surface state down to m<missing VAR>K temperatureswith saturation behaviors suggestive of Kondo effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Weak Antilocalization and Linear Magnetoresistance in The Surface State of SmB6|S. Thomas,D. J. Kim,S. B. Chung,T. Grant,Z. Fisk,Jing Xia###
(1139682, 1139682)
 We observe in the surfacestate the weak-antilocalization (WAL) effect that is in agreement with aspin-momentum locked metallic surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Weak Antilocalization and Linear Magnetoresistance in The Surface State of SmB6|S. Thomas,D. J. Kim,S. B. Chung,T. Grant,Z. Fisk,Jing Xia###
(1139713, 1139713)
 At larger perpendicular magnetic fields,the surface state exhibits an unusual linear magnetoresistance similar to thosefound in Bi-based topological insulators and in graphene.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi
###Weak Antilocalization and Linear Magnetoresistance in The Surface State of SmB6|S. Thomas,D. J. Kim,S. B. Chung,T. Grant,Z. Fisk,Jing Xia###
(1139752, 1139752)
 At larger perpendicular magnetic fields,the surface state exhibits an unusual linear magnetoresistance similar to thosefound in Bi-based topological insulators and in graphene.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Non linear magnetotransport theory and Hall induced resistance oscillations in graphene|Ricardo Gutierrez-Jauregui,Manuel Torres###
(1140062, 1140062)
 At small magnetic field, the existence of Hallinduced resistance oscillations are predicted for ultra clean graphene samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Interplay between Aharonov-Bohm interference and parity selective tunneling in zigzag graphene nanoribbon rings|Viet-Hung Nguyen,Yann-Michel Niquet,Philippe Dollfus###
(1140198, 1140198)
 We report a numerical study on Aharonov-Bohm (AB) effect and parity selectivetunneling in pn junctions based on zigzag graphene nanoribbon rings.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Interplay between Aharonov-Bohm interference and parity selective tunneling in zigzag graphene nanoribbon rings|Viet-Hung Nguyen,Yann-Michel Niquet,Philippe Dollfus###
(1140258, 1140258)
 We findthat when applying a magnetic field to the ring, the AB interference canreverse the parity symmetry of incoming waves and hence can strongly modulatethe parity selective transmission through the system.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Interplay between Aharonov-Bohm interference and parity selective tunneling in zigzag graphene nanoribbon rings|Viet-Hung Nguyen,Yann-Michel Niquet,Philippe Dollfus###
(1140330, 1140330)
 Therefore, thetransmission between two states of different parity exhibits the ABoscillations with a pi-phase shift, compared to the case of states of sameparity.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Interplay between Aharonov-Bohm interference and parity selective tunneling in zigzag graphene nanoribbon rings|Viet-Hung Nguyen,Yann-Michel Niquet,Philippe Dollfus###
(1140448, 1140448)
 Our study thus presents a newproperty of the AB interference, which could be helpful to further understandthe transport properties of graphene mesoscopic-systems.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi1-x
###Dirac vs. Weyl in topological insulators: Adler-Bell-Jackiw anomaly in transport phenomena|Heon-Jung Kim,Ki-Seok Kim,J. F. Wang,M. Sasaki,N. Satoh,A. Ohnishi,M. Kitaura,M. Yang,L. Li###
(1140647, 1140650)
 Applying magnetic fieldsnear the topological phase transition from a topological insulator to a bandinsulator in Bi1-xSbx, we observe not only the weak anti-localizationphenomenon in magnetoconductivity near zero magnetic fields (B < 0.4 T) butalso its upturn above 0.4 T only for E<missing VAR> // B.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[39.0, 0.4, 'T', 0],[52.0, 0.4, 'T', 0]

B
###Dirac vs. Weyl in topological insulators: Adler-Bell-Jackiw anomaly in transport phenomena|Heon-Jung Kim,Ki-Seok Kim,J. F. Wang,M. Sasaki,N. Satoh,A. Ohnishi,M. Kitaura,M. Yang,L. Li###
(1140686, 1140686)
 Applying magnetic fieldsnear the topological phase transition from a topological insulator to a bandinsulator in Bi1-xSbx, we observe not only the weak anti-localizationphenomenon in magnetoconductivity near zero magnetic fields (B < 0.4 T) butalso its upturn above 0.4 T only for E<missing VAR> // B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 0.4, 'T', 0],[16.0, 0.4, 'T', 0]

B
###Dirac vs. Weyl in topological insulators: Adler-Bell-Jackiw anomaly in transport phenomena|Heon-Jung Kim,Ki-Seok Kim,J. F. Wang,M. Sasaki,N. Satoh,A. Ohnishi,M. Kitaura,M. Yang,L. Li###
(1140713, 1140713)
 Applying magnetic fieldsnear the topological phase transition from a topological insulator to a bandinsulator in Bi1-xSbx, we observe not only the weak anti-localizationphenomenon in magnetoconductivity near zero magnetic fields (B < 0.4 T) butalso its upturn above 0.4 T only for E<missing VAR> // B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 0.4, 'T', 0],[11.0, 0.4, 'T', 0]

B
###Dirac vs. Weyl in topological insulators: Adler-Bell-Jackiw anomaly in transport phenomena|Heon-Jung Kim,Ki-Seok Kim,J. F. Wang,M. Sasaki,N. Satoh,A. Ohnishi,M. Kitaura,M. Yang,L. Li###
(1140759, 1140759)
 This incompatible coexistencebetween weak anti-localization and negative magnetoresistivity is attributed tothe Adler-Bell-Jackiw anomaly (topological E<missing VAR> B term) in the presence of weakanti-localization corrections.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 0.4, 'T', 1],[57.0, 0.4, 'T', 1]

In
###Linear magnetoconductivity in multiband spin-density-wave metals with nonideal nesting|A. E. Koshelev###
(1140813, 1140813)
 In several parent iron-pnictide compounds the resistivity has an extendedrange of linear magnetic field dependence.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Linear magnetoconductivity in multiband spin-density-wave metals with nonideal nesting|A. E. Koshelev###
(1140970, 1140970)
 As the area of the Fermi surface affected bythe nesting points increases proportionally to magnetic field, this mechanismleads to the linear magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Linear magnetoconductivity in multiband spin-density-wave metals with nonideal nesting|A. E. Koshelev###
(1141057, 1141057)
 The crossover between the quadratic andlinear regimes takes place at the field scale set by the SD<missing VAR>W gap and scatteringrate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Linear magnetoconductivity in multiband spin-density-wave metals with nonideal nesting|A. E. Koshelev###
(1141059, 1141059)
 The crossover between the quadratic andlinear regimes takes place at the field scale set by the SD<missing VAR>W gap and scatteringrate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Aging the Cu-doped Bi2Te3 crystals for the topological transport and its atomic tunneling-clustering dynamics|Taishi Chen,Qian Chen,Koen Schouteden,Wenkai Huang,Xuefeng Wang,Zhe Li,Feng Miao,Xinran Wang,Zhaoguo Li,Bo Zhao,Shaochun Li,Fengqi Song,Jinlan Wang,Chris van Haesendonck,Baigeng Wang,Guanghou Wang###
(1141083, 1141083)
Aging the Cu-doped Bi2Te3 crystals for the topological transport and its atomic tunneling-clustering dynamics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 3.3, '%', 3],[161.0, 100, 'nm', 3],[316.0, 0.57, 'eV', 6]

Bi2Te3
###Aging the Cu-doped Bi2Te3 crystals for the topological transport and its atomic tunneling-clustering dynamics|Taishi Chen,Qian Chen,Koen Schouteden,Wenkai Huang,Xuefeng Wang,Zhe Li,Feng Miao,Xinran Wang,Zhaoguo Li,Bo Zhao,Shaochun Li,Fengqi Song,Jinlan Wang,Chris van Haesendonck,Baigeng Wang,Guanghou Wang###
(1141087, 1141090)
Aging the Cu-doped Bi2Te3 crystals for the topological transport and its atomic tunneling-clustering dynamics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 3.3, '%', 3],[154.0, 100, 'nm', 3],[309.0, 0.57, 'eV', 6]

(Cu0.1Bi0.9)2Te3.06
###Aging the Cu-doped Bi2Te3 crystals for the topological transport and its atomic tunneling-clustering dynamics|Taishi Chen,Qian Chen,Koen Schouteden,Wenkai Huang,Xuefeng Wang,Zhe Li,Feng Miao,Xinran Wang,Zhaoguo Li,Bo Zhao,Shaochun Li,Fengqi Song,Jinlan Wang,Chris van Haesendonck,Baigeng Wang,Guanghou Wang###
(1141140, 1141148)
 We report on the observation of the two-dimensional weak antilocalization in(Cu0.1Bi0.9)2Te3.06 crystals relying on measurements of the magnetoresistancein a tilted field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.039525691699604744,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6047430830039525,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3557312252964427,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 3.3, '%', 2],[96.0, 100, 'nm', 2],[251.0, 0.57, 'eV', 5]

(SS)
###Aging the Cu-doped Bi2Te3 crystals for the topological transport and its atomic tunneling-clustering dynamics|Taishi Chen,Qian Chen,Koen Schouteden,Wenkai Huang,Xuefeng Wang,Zhe Li,Feng Miao,Xinran Wang,Zhaoguo Li,Bo Zhao,Shaochun Li,Fengqi Song,Jinlan Wang,Chris van Haesendonck,Baigeng Wang,Guanghou Wang###
(1141205, 1141208)
 The dephasing analysis and scanning tunneling spectroscopycorroborate the transport of the topological surface states (SS).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 3.3, '%', 1],[36.0, 100, 'nm', 1],[191.0, 0.57, 'eV', 4]

S
###Aging the Cu-doped Bi2Te3 crystals for the topological transport and its atomic tunneling-clustering dynamics|Taishi Chen,Qian Chen,Koen Schouteden,Wenkai Huang,Xuefeng Wang,Zhe Li,Feng Miao,Xinran Wang,Zhaoguo Li,Bo Zhao,Shaochun Li,Fengqi Song,Jinlan Wang,Chris van Haesendonck,Baigeng Wang,Guanghou Wang###
(1141213, 1141213)
 The SSscontribute 3.3% conductance in 30mum<missing VAR>-thick material and become dominant inthe 100nm-thick flakes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 3.3, '%', 0],[31.0, 100, 'nm', 0],[186.0, 0.57, 'eV', 3]

SS
###Aging the Cu-doped Bi2Te3 crystals for the topological transport and its atomic tunneling-clustering dynamics|Taishi Chen,Qian Chen,Koen Schouteden,Wenkai Huang,Xuefeng Wang,Zhe Li,Feng Miao,Xinran Wang,Zhaoguo Li,Bo Zhao,Shaochun Li,Fengqi Song,Jinlan Wang,Chris van Haesendonck,Baigeng Wang,Guanghou Wang###
(1141257, 1141258)
 Such optimized topological SS transport is achieved byan intense aging process, when the bulk conductance is suppressed by fourorders of magnitude in the long period.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 3.3, '%', 1],[13.0, 100, 'nm', 1],[141.0, 0.57, 'eV', 2]

Cu
###Aging the Cu-doped Bi2Te3 crystals for the topological transport and its atomic tunneling-clustering dynamics|Taishi Chen,Qian Chen,Koen Schouteden,Wenkai Huang,Xuefeng Wang,Zhe Li,Feng Miao,Xinran Wang,Zhaoguo Li,Bo Zhao,Shaochun Li,Fengqi Song,Jinlan Wang,Chris van Haesendonck,Baigeng Wang,Guanghou Wang###
(1141321, 1141321)
 Scanning tunneling microscopy revealsthat Cu atoms are initially inside the quintuple layers and migrate to thelayer gaps to form Cu clusters during the aging.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 3.3, '%', 2],[77.0, 100, 'nm', 2],[78.0, 0.57, 'eV', 1]

Cu
###Aging the Cu-doped Bi2Te3 crystals for the topological transport and its atomic tunneling-clustering dynamics|Taishi Chen,Qian Chen,Koen Schouteden,Wenkai Huang,Xuefeng Wang,Zhe Li,Feng Miao,Xinran Wang,Zhaoguo Li,Bo Zhao,Shaochun Li,Fengqi Song,Jinlan Wang,Chris van Haesendonck,Baigeng Wang,Guanghou Wang###
(1141354, 1141354)
 Scanning tunneling microscopy revealsthat Cu atoms are initially inside the quintuple layers and migrate to thelayer gaps to form Cu clusters during the aging.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 3.3, '%', 2],[110.0, 100, 'nm', 2],[45.0, 0.57, 'eV', 1]

In
###Aging the Cu-doped Bi2Te3 crystals for the topological transport and its atomic tunneling-clustering dynamics|Taishi Chen,Qian Chen,Koen Schouteden,Wenkai Huang,Xuefeng Wang,Zhe Li,Feng Miao,Xinran Wang,Zhaoguo Li,Bo Zhao,Shaochun Li,Fengqi Song,Jinlan Wang,Chris van Haesendonck,Baigeng Wang,Guanghou Wang###
(1141365, 1141365)
 In combination withfirst-principles calculations, an atomic tunneling-clustering procedure acrossa diffusion barrier of 0.57eV is proposed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 3.3, '%', 3],[121.0, 100, 'nm', 3],[34.0, 0.57, 'eV', 0]

O
###Spin-Transfer-Torque Driven Magneto-Logic OR, AND and NOT Gates|C. Sanid,S. Murugesh###
(1141426, 1141426)
Spin-Transfer-Torque Driven Magneto-Logic OR<missing VAR>, AND<missing VAR> and NOT<missing VAR> Gates.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Spin-Transfer-Torque Driven Magneto-Logic OR, AND and NOT Gates|C. Sanid,S. Murugesh###
(1141431, 1141431)
Spin-Transfer-Torque Driven Magneto-Logic OR<missing VAR>, AND<missing VAR> and NOT<missing VAR> Gates.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NO
###Spin-Transfer-Torque Driven Magneto-Logic OR, AND and NOT Gates|C. Sanid,S. Murugesh###
(1141436, 1141437)
Spin-Transfer-Torque Driven Magneto-Logic OR<missing VAR>, AND<missing VAR> and NOT<missing VAR> Gates.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Spin-Transfer-Torque Driven Magneto-Logic OR, AND and NOT Gates|C. Sanid,S. Murugesh###
(1141462, 1141462)
 We show that current induced magneto-logic gates like AND<missing VAR>, OR<missing VAR> and NOT<missing VAR> can bedesigned with the simple architecture involving a single nano spin-valvepillar, as an extension of our recent work on spin-torque-driven magneto-logicuniversal gates, NAND<missing VAR> and NOR<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Spin-Transfer-Torque Driven Magneto-Logic OR, AND and NOT Gates|C. Sanid,S. Murugesh###
(1141466, 1141466)
 We show that current induced magneto-logic gates like AND<missing VAR>, OR<missing VAR> and NOT<missing VAR> can bedesigned with the simple architecture involving a single nano spin-valvepillar, as an extension of our recent work on spin-torque-driven magneto-logicuniversal gates, NAND<missing VAR> and NOR<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NO
###Spin-Transfer-Torque Driven Magneto-Logic OR, AND and NOT Gates|C. Sanid,S. Murugesh###
(1141471, 1141472)
 We show that current induced magneto-logic gates like AND<missing VAR>, OR<missing VAR> and NOT<missing VAR> can bedesigned with the simple architecture involving a single nano spin-valvepillar, as an extension of our recent work on spin-torque-driven magneto-logicuniversal gates, NAND<missing VAR> and NOR<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Spin-Transfer-Torque Driven Magneto-Logic OR, AND and NOT Gates|C. Sanid,S. Murugesh###
(1141538, 1141538)
 We show that current induced magneto-logic gates like AND<missing VAR>, OR<missing VAR> and NOT<missing VAR> can bedesigned with the simple architecture involving a single nano spin-valvepillar, as an extension of our recent work on spin-torque-driven magneto-logicuniversal gates, NAND<missing VAR> and NOR<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Spin-Transfer-Torque Driven Magneto-Logic OR, AND and NOT Gates|C. Sanid,S. Murugesh###
(1141540, 1141540)
 We show that current induced magneto-logic gates like AND<missing VAR>, OR<missing VAR> and NOT<missing VAR> can bedesigned with the simple architecture involving a single nano spin-valvepillar, as an extension of our recent work on spin-torque-driven magneto-logicuniversal gates, NAND<missing VAR> and NOR<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NO
###Spin-Transfer-Torque Driven Magneto-Logic OR, AND and NOT Gates|C. Sanid,S. Murugesh###
(1141545, 1141546)
 We show that current induced magneto-logic gates like AND<missing VAR>, OR<missing VAR> and NOT<missing VAR> can bedesigned with the simple architecture involving a single nano spin-valvepillar, as an extension of our recent work on spin-torque-driven magneto-logicuniversal gates, NAND<missing VAR> and NOR<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Edge proximity-induced magnetoresistance and spin polarization in ferromagnetic gated bilayer graphene nanoribbon|Vahid Derakhshan,Hosein Cheraghchi###
(1142142, 1142142)
 In a more realistic set-up, theexchange field is induced by two ferromagnetic insulator strips deposited onthe ribbon edges while a perpendicular electric field is applied by the topgated electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Edge proximity-induced magnetoresistance and spin polarization in ferromagnetic gated bilayer graphene nanoribbon|Vahid Derakhshan,Hosein Cheraghchi###
(1142276, 1142276)
 As a result, a giantmagnetoresistance is achievable by changing the alignment of inducedmagnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Exchange bias effect in martensitic epitaxial Ni-Mn-Sn thin films applied to pin CoFeB/MgO/CoFeB magnetic tunnel junctions|Niclas Teichert,Alexander Boehnke,Anna Behler,Bruno Weise,Anja Waske,Andreas Hütten###
(1142737, 1142737)
Exchange bias effect in martensitic epitaxial Ni-Mn-Sn thin films applied to pin CoFeB/MgO/CoFeB magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[268.0, -10, ',', 6],[337.0, 10, ',', 7],[359.0, 70, ',', 7]

Mn
###Exchange bias effect in martensitic epitaxial Ni-Mn-Sn thin films applied to pin CoFeB/MgO/CoFeB magnetic tunnel junctions|Niclas Teichert,Alexander Boehnke,Anna Behler,Bruno Weise,Anja Waske,Andreas Hütten###
(1142739, 1142739)
Exchange bias effect in martensitic epitaxial Ni-Mn-Sn thin films applied to pin CoFeB/MgO/CoFeB magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[266.0, -10, ',', 6],[335.0, 10, ',', 7],[357.0, 70, ',', 7]

Sn
###Exchange bias effect in martensitic epitaxial Ni-Mn-Sn thin films applied to pin CoFeB/MgO/CoFeB magnetic tunnel junctions|Niclas Teichert,Alexander Boehnke,Anna Behler,Bruno Weise,Anja Waske,Andreas Hütten###
(1142741, 1142741)
Exchange bias effect in martensitic epitaxial Ni-Mn-Sn thin films applied to pin CoFeB/MgO/CoFeB magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[264.0, -10, ',', 6],[333.0, 10, ',', 7],[355.0, 70, ',', 7]

CoFeB/MgO/CoFeB
###Exchange bias effect in martensitic epitaxial Ni-Mn-Sn thin films applied to pin CoFeB/MgO/CoFeB magnetic tunnel junctions|Niclas Teichert,Alexander Boehnke,Anna Behler,Bruno Weise,Anja Waske,Andreas Hütten###
(1142753, 1142762)
Exchange bias effect in martensitic epitaxial Ni-Mn-Sn thin films applied to pin CoFeB/MgO/CoFeB magnetic tunnel junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[243.0, -10, ',', 6],[312.0, 10, ',', 7],[334.0, 70, ',', 7]

Ni
###Exchange bias effect in martensitic epitaxial Ni-Mn-Sn thin films applied to pin CoFeB/MgO/CoFeB magnetic tunnel junctions|Niclas Teichert,Alexander Boehnke,Anna Behler,Bruno Weise,Anja Waske,Andreas Hütten###
(1142894, 1142894)
 Here, wedemonstrate that the intrinsic exchange bias effect of Ni-Mn-Sn can be used toapply a unidirectional anisotropy to magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, -10, ',', 2],[180.0, 10, ',', 3],[202.0, 70, ',', 3]

Mn
###Exchange bias effect in martensitic epitaxial Ni-Mn-Sn thin films applied to pin CoFeB/MgO/CoFeB magnetic tunnel junctions|Niclas Teichert,Alexander Boehnke,Anna Behler,Bruno Weise,Anja Waske,Andreas Hütten###
(1142896, 1142896)
 Here, wedemonstrate that the intrinsic exchange bias effect of Ni-Mn-Sn can be used toapply a unidirectional anisotropy to magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, -10, ',', 2],[178.0, 10, ',', 3],[200.0, 70, ',', 3]

Sn
###Exchange bias effect in martensitic epitaxial Ni-Mn-Sn thin films applied to pin CoFeB/MgO/CoFeB magnetic tunnel junctions|Niclas Teichert,Alexander Boehnke,Anna Behler,Bruno Weise,Anja Waske,Andreas Hütten###
(1142898, 1142898)
 Here, wedemonstrate that the intrinsic exchange bias effect of Ni-Mn-Sn can be used toapply a unidirectional anisotropy to magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, -10, ',', 2],[176.0, 10, ',', 3],[198.0, 70, ',', 3]

Ni
###Exchange bias effect in martensitic epitaxial Ni-Mn-Sn thin films applied to pin CoFeB/MgO/CoFeB magnetic tunnel junctions|Niclas Teichert,Alexander Boehnke,Anna Behler,Bruno Weise,Anja Waske,Andreas Hütten###
(1142938, 1142938)
 For this, weuse epitaxial Ni-Mn-Sn films as pinning layers for microfabricatedCoFeB/MgO/CoFeB magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, -10, ',', 1],[136.0, 10, ',', 2],[158.0, 70, ',', 2]

Mn
###Exchange bias effect in martensitic epitaxial Ni-Mn-Sn thin films applied to pin CoFeB/MgO/CoFeB magnetic tunnel junctions|Niclas Teichert,Alexander Boehnke,Anna Behler,Bruno Weise,Anja Waske,Andreas Hütten###
(1142940, 1142940)
 For this, weuse epitaxial Ni-Mn-Sn films as pinning layers for microfabricatedCoFeB/MgO/CoFeB magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, -10, ',', 1],[134.0, 10, ',', 2],[156.0, 70, ',', 2]

Sn
###Exchange bias effect in martensitic epitaxial Ni-Mn-Sn thin films applied to pin CoFeB/MgO/CoFeB magnetic tunnel junctions|Niclas Teichert,Alexander Boehnke,Anna Behler,Bruno Weise,Anja Waske,Andreas Hütten###
(1142942, 1142942)
 For this, weuse epitaxial Ni-Mn-Sn films as pinning layers for microfabricatedCoFeB/MgO/CoFeB magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, -10, ',', 1],[132.0, 10, ',', 2],[154.0, 70, ',', 2]

CoFeB/MgO/CoFeB
###Exchange bias effect in martensitic epitaxial Ni-Mn-Sn thin films applied to pin CoFeB/MgO/CoFeB magnetic tunnel junctions|Niclas Teichert,Alexander Boehnke,Anna Behler,Bruno Weise,Anja Waske,Andreas Hütten###
(1142957, 1142966)
 For this, weuse epitaxial Ni-Mn-Sn films as pinning layers for microfabricatedCoFeB/MgO/CoFeB magnetic tunnel junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[39.0, -10, ',', 1],[108.0, 10, ',', 2],[130.0, 70, ',', 2]

H
###Exchange bias effect in martensitic epitaxial Ni-Mn-Sn thin films applied to pin CoFeB/MgO/CoFeB magnetic tunnel junctions|Niclas Teichert,Alexander Boehnke,Anna Behler,Bruno Weise,Anja Waske,Andreas Hütten###
(1142989, 1142989)
 We compare the exchange bias field(HtextE<missing VAR>B) measured after field cooling in -10,k<missing VAR>Oe external field bymagnetization measurements with HtextE<missing VAR>B obtained from tunnelmagnetoresistance measurements.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, -10, ',', 0],[85.0, 10, ',', 1],[107.0, 70, ',', 1]

B
###Exchange bias effect in martensitic epitaxial Ni-Mn-Sn thin films applied to pin CoFeB/MgO/CoFeB magnetic tunnel junctions|Niclas Teichert,Alexander Boehnke,Anna Behler,Bruno Weise,Anja Waske,Andreas Hütten###
(1142992, 1142992)
 We compare the exchange bias field(HtextE<missing VAR>B) measured after field cooling in -10,k<missing VAR>Oe external field bymagnetization measurements with HtextE<missing VAR>B obtained from tunnelmagnetoresistance measurements.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, -10, ',', 0],[82.0, 10, ',', 1],[104.0, 70, ',', 1]

H
###Exchange bias effect in martensitic epitaxial Ni-Mn-Sn thin films applied to pin CoFeB/MgO/CoFeB magnetic tunnel junctions|Niclas Teichert,Alexander Boehnke,Anna Behler,Bruno Weise,Anja Waske,Andreas Hütten###
(1143024, 1143024)
 We compare the exchange bias field(HtextE<missing VAR>B) measured after field cooling in -10,k<missing VAR>Oe external field bymagnetization measurements with HtextE<missing VAR>B obtained from tunnelmagnetoresistance measurements.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, -10, ',', 0],[50.0, 10, ',', 1],[72.0, 70, ',', 1]

B
###Exchange bias effect in martensitic epitaxial Ni-Mn-Sn thin films applied to pin CoFeB/MgO/CoFeB magnetic tunnel junctions|Niclas Teichert,Alexander Boehnke,Anna Behler,Bruno Weise,Anja Waske,Andreas Hütten###
(1143027, 1143027)
 We compare the exchange bias field(HtextE<missing VAR>B) measured after field cooling in -10,k<missing VAR>Oe external field bymagnetization measurements with HtextE<missing VAR>B obtained from tunnelmagnetoresistance measurements.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, -10, ',', 0],[47.0, 10, ',', 1],[69.0, 70, ',', 1]

H
###Exchange bias effect in martensitic epitaxial Ni-Mn-Sn thin films applied to pin CoFeB/MgO/CoFeB magnetic tunnel junctions|Niclas Teichert,Alexander Boehnke,Anna Behler,Bruno Weise,Anja Waske,Andreas Hütten###
(1143064, 1143064)
 Consistent for both methods we find an exchangebias of about HtextE<missing VAR>B130,Oe at 10,K, which decreases with increasingtemperature and vanishes above 70,K.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, -10, ',', 1],[10.0, 10, ',', 0],[32.0, 70, ',', 0]

B130
###Exchange bias effect in martensitic epitaxial Ni-Mn-Sn thin films applied to pin CoFeB/MgO/CoFeB magnetic tunnel junctions|Niclas Teichert,Alexander Boehnke,Anna Behler,Bruno Weise,Anja Waske,Andreas Hütten###
(1143067, 1143068)
 Consistent for both methods we find an exchangebias of about HtextE<missing VAR>B130,Oe at 10,K, which decreases with increasingtemperature and vanishes above 70,K.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, -10, ',', 1],[6.0, 10, ',', 0],[28.0, 70, ',', 0]

K
###Exchange bias effect in martensitic epitaxial Ni-Mn-Sn thin films applied to pin CoFeB/MgO/CoFeB magnetic tunnel junctions|Niclas Teichert,Alexander Boehnke,Anna Behler,Bruno Weise,Anja Waske,Andreas Hütten###
(1143076, 1143076)
 Consistent for both methods we find an exchangebias of about HtextE<missing VAR>B130,Oe at 10,K, which decreases with increasingtemperature and vanishes above 70,K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, -10, ',', 1],[2.0, 10, ',', 0],[20.0, 70, ',', 0]

K
###Exchange bias effect in martensitic epitaxial Ni-Mn-Sn thin films applied to pin CoFeB/MgO/CoFeB magnetic tunnel junctions|Niclas Teichert,Alexander Boehnke,Anna Behler,Bruno Weise,Anja Waske,Andreas Hütten###
(1143098, 1143098)
 Consistent for both methods we find an exchangebias of about HtextE<missing VAR>B130,Oe at 10,K, which decreases with increasingtemperature and vanishes above 70,K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, -10, ',', 1],[24.0, 10, ',', 0],[2.0, 70, ',', 0]

LaAlO3/SrTiO3
###Growth-induced electron mobility enhancement at the LaAlO$_3$/SrTiO$_3$ interface|A. Fête,C. Cancellieri,D. Li,D. Stornaiuolo,A. D. Caviglia,S. Gariglio,J. -M. Triscone###
(1143484, 1143492)
Growth-induced electron mobility enhancement at the LaAlO3/SrTiO3 interface.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[20.0, 2, 'D', 1],[238.0, 4, 'K', 4]

LaAlO3/SrTiO3
###Growth-induced electron mobility enhancement at the LaAlO$_3$/SrTiO$_3$ interface|A. Fête,C. Cancellieri,D. Li,D. Stornaiuolo,A. D. Caviglia,S. Gariglio,J. -M. Triscone###
(1143525, 1143533)
 We have studied the electronic properties of the 2D electron liquid presentat the LaAlO3/SrTiO3 interface in series of samples prepared at differentgrowth temperatures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[13.0, 2, 'D', 0],[197.0, 4, 'K', 3]

C
###Growth-induced electron mobility enhancement at the LaAlO$_3$/SrTiO$_3$ interface|A. Fête,C. Cancellieri,D. Li,D. Stornaiuolo,A. D. Caviglia,S. Gariglio,J. -M. Triscone###
(1143571, 1143571)
 We observe that interfaces fabricated at 650degCexhibit the highest low temperature mobility (approx 10000 textrmcm2/textrmVs) and the lowest sheet carrier density (approx 5times1012 textrm cm-2).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 2, 'D', 1],[159.0, 4, 'K', 2]

C
###Growth-induced electron mobility enhancement at the LaAlO$_3$/SrTiO$_3$ interface|A. Fête,C. Cancellieri,D. Li,D. Stornaiuolo,A. D. Caviglia,S. Gariglio,J. -M. Triscone###
(1143675, 1143675)
 Samples grown athigher temperatures (800-900degC) display carrier densities in the range ofapprox 2-5 times 1013 textrm cm-2 and mobilities of approx 1000textrm cm2/textrmVs at 4K.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 2, 'D', 3],[55.0, 4, 'K', 0]

NbAs
###Magnetotransport of single crystalline NbAs|N. J. Ghimire,Yongkang Luo,M. Neupane,D. J. Williams,E. D. Bauer,F. Ronning###
(1143817, 1143818)
Magnetotransport of single crystalline NbAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 9, 'T', 2],[101.0, 230, ',', 3],[147.0, 150, 'K', 4],[166.0, 2, 'K', 5],[181.0, 1.8, 'x', 5],[192.0, 3.5, 'x', 5]

NbAs
###Magnetotransport of single crystalline NbAs|N. J. Ghimire,Yongkang Luo,M. Neupane,D. J. Williams,E. D. Bauer,F. Ronning###
(1143852, 1143853)
 We report transport measurement in zero and applied magnetic field on asingle crystal of NbAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 9, 'T', 1],[66.0, 230, ',', 2],[112.0, 150, 'K', 3],[131.0, 2, 'K', 4],[146.0, 1.8, 'x', 4],[157.0, 3.5, 'x', 4]

In
###Magnetotransport of single crystalline NbAs|N. J. Ghimire,Yongkang Luo,M. Neupane,D. J. Williams,E. D. Bauer,F. Ronning###
(1143891, 1143891)
 In thetransverse configuration (H parallel c<missing VAR>, I perp c) it is 230,000 % at 2K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 9, 'T', 1],[28.0, 230, ',', 0],[74.0, 150, 'K', 1],[93.0, 2, 'K', 2],[108.0, 1.8, 'x', 2],[119.0, 3.5, 'x', 2]

H
###Magnetotransport of single crystalline NbAs|N. J. Ghimire,Yongkang Luo,M. Neupane,D. J. Williams,E. D. Bauer,F. Ronning###
(1143901, 1143901)
 In thetransverse configuration (H parallel c<missing VAR>, I perp c) it is 230,000 % at 2K.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 9, 'T', 1],[18.0, 230, ',', 0],[64.0, 150, 'K', 1],[83.0, 2, 'K', 2],[98.0, 1.8, 'x', 2],[109.0, 3.5, 'x', 2]

I
###Magnetotransport of single crystalline NbAs|N. J. Ghimire,Yongkang Luo,M. Neupane,D. J. Williams,E. D. Bauer,F. Ronning###
(1143908, 1143908)
 In thetransverse configuration (H parallel c<missing VAR>, I perp c) it is 230,000 % at 2K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 9, 'T', 1],[11.0, 230, ',', 0],[57.0, 150, 'K', 1],[76.0, 2, 'K', 2],[91.0, 1.8, 'x', 2],[102.0, 3.5, 'x', 2]

K
###Magnetotransport of single crystalline NbAs|N. J. Ghimire,Yongkang Luo,M. Neupane,D. J. Williams,E. D. Bauer,F. Ronning###
(1143930, 1143930)
 In thetransverse configuration (H parallel c<missing VAR>, I perp c) it is 230,000 % at 2K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 9, 'T', 1],[11.0, 230, ',', 0],[35.0, 150, 'K', 1],[54.0, 2, 'K', 2],[69.0, 1.8, 'x', 2],[80.0, 3.5, 'x', 2]

TaAs
###Magnetotransport of single crystalline NbAs|N. J. Ghimire,Yongkang Luo,M. Neupane,D. J. Williams,E. D. Bauer,F. Ronning###
(1144041, 1144042)
 These values are similarto reported values for TaAs and NbP, and further emphasize that this class ofnoncentrosymmetric, transition-metal monopnictides is a promising family toexplore the properties of Weyl semimetals and the consequences of their novelelectronic structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 9, 'T', 4],[122.0, 230, ',', 3],[76.0, 150, 'K', 2],[57.0, 2, 'K', 1],[42.0, 1.8, 'x', 1],[31.0, 3.5, 'x', 1]

NbP
###Magnetotransport of single crystalline NbAs|N. J. Ghimire,Yongkang Luo,M. Neupane,D. J. Williams,E. D. Bauer,F. Ronning###
(1144046, 1144047)
 These values are similarto reported values for TaAs and NbP, and further emphasize that this class ofnoncentrosymmetric, transition-metal monopnictides is a promising family toexplore the properties of Weyl semimetals and the consequences of their novelelectronic structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 9, 'T', 4],[127.0, 230, ',', 3],[81.0, 150, 'K', 2],[62.0, 2, 'K', 1],[47.0, 1.8, 'x', 1],[36.0, 3.5, 'x', 1]

S
###Spin Hall magnetoresistance in metallic bilayers|Junyeon Kim,Peng Sheng,Saburo Takahashi,Seiji Mitani,Masamitsu Hayashi###
(1144143, 1144143)
 Spin Hall magnetoresistance (SMR) is studied in metallic bilayers thatconsist of heavy metal (HM) layer and a ferromagnetic metal (FM) layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Spin Hall magnetoresistance in metallic bilayers|Junyeon Kim,Peng Sheng,Saburo Takahashi,Seiji Mitani,Masamitsu Hayashi###
(1144170, 1144170)
 Spin Hall magnetoresistance (SMR) is studied in metallic bilayers thatconsist of heavy metal (HM) layer and a ferromagnetic metal (FM) layer.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Spin Hall magnetoresistance in metallic bilayers|Junyeon Kim,Peng Sheng,Saburo Takahashi,Seiji Mitani,Masamitsu Hayashi###
(1144185, 1144185)
 Spin Hall magnetoresistance (SMR) is studied in metallic bilayers thatconsist of heavy metal (HM) layer and a ferromagnetic metal (FM) layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin Hall magnetoresistance in metallic bilayers|Junyeon Kim,Peng Sheng,Saburo Takahashi,Seiji Mitani,Masamitsu Hayashi###
(1144209, 1144209)
 We findnearly a ten-fold increase of SMR in W/CoFeB compared to previously studiedHM<missing VAR>/ferromagnetic insulator (FI) systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W/CoFeB
###Spin Hall magnetoresistance in metallic bilayers|Junyeon Kim,Peng Sheng,Saburo Takahashi,Seiji Mitani,Masamitsu Hayashi###
(1144215, 1144219)
 We findnearly a ten-fold increase of SMR in W/CoFeB compared to previously studiedHM<missing VAR>/ferromagnetic insulator (FI) systems.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

H
###Spin Hall magnetoresistance in metallic bilayers|Junyeon Kim,Peng Sheng,Saburo Takahashi,Seiji Mitani,Masamitsu Hayashi###
(1144230, 1144230)
 We findnearly a ten-fold increase of SMR in W/CoFeB compared to previously studiedHM<missing VAR>/ferromagnetic insulator (FI) systems.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(FI)
###Spin Hall magnetoresistance in metallic bilayers|Junyeon Kim,Peng Sheng,Saburo Takahashi,Seiji Mitani,Masamitsu Hayashi###
(1144237, 1144240)
 We findnearly a ten-fold increase of SMR in W/CoFeB compared to previously studiedHM<missing VAR>/ferromagnetic insulator (FI) systems.
Featurization successful!
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin Hall magnetoresistance in metallic bilayers|Junyeon Kim,Peng Sheng,Saburo Takahashi,Seiji Mitani,Masamitsu Hayashi###
(1144247, 1144247)
 The SMR increases with decreasingtemperature despite the negligible change in the W layer resistivity withtemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Spin Hall magnetoresistance in metallic bilayers|Junyeon Kim,Peng Sheng,Saburo Takahashi,Seiji Mitani,Masamitsu Hayashi###
(1144272, 1144272)
 The SMR increases with decreasingtemperature despite the negligible change in the W layer resistivity withtemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Spin Hall magnetoresistance in metallic bilayers|Junyeon Kim,Peng Sheng,Saburo Takahashi,Seiji Mitani,Masamitsu Hayashi###
(1144317, 1144317)
 A model is developed to account for the absorption of thelongitudinal spin current to the FM<missing VAR> layer, one of the key characteristics of ametallic ferromagnet.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Spin Hall magnetoresistance in metallic bilayers|Junyeon Kim,Peng Sheng,Saburo Takahashi,Seiji Mitani,Masamitsu Hayashi###
(1144364, 1144364)
 We find that the model not only quantitatively describesthe HM<missing VAR> layer thickness dependence of SMR, allowing accurate estimation of thespin Hall angle and the spin diffusion length of the HM<missing VAR> layer, but also canaccount for the temperature dependence of SMR by assuming a temperaturedependent spin polarization of the FM<missing VAR> layer.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin Hall magnetoresistance in metallic bilayers|Junyeon Kim,Peng Sheng,Saburo Takahashi,Seiji Mitani,Masamitsu Hayashi###
(1144375, 1144375)
 We find that the model not only quantitatively describesthe HM<missing VAR> layer thickness dependence of SMR, allowing accurate estimation of thespin Hall angle and the spin diffusion length of the HM<missing VAR> layer, but also canaccount for the temperature dependence of SMR by assuming a temperaturedependent spin polarization of the FM<missing VAR> layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Spin Hall magnetoresistance in metallic bilayers|Junyeon Kim,Peng Sheng,Saburo Takahashi,Seiji Mitani,Masamitsu Hayashi###
(1144411, 1144411)
 We find that the model not only quantitatively describesthe HM<missing VAR> layer thickness dependence of SMR, allowing accurate estimation of thespin Hall angle and the spin diffusion length of the HM<missing VAR> layer, but also canaccount for the temperature dependence of SMR by assuming a temperaturedependent spin polarization of the FM<missing VAR> layer.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin Hall magnetoresistance in metallic bilayers|Junyeon Kim,Peng Sheng,Saburo Takahashi,Seiji Mitani,Masamitsu Hayashi###
(1144436, 1144436)
 We find that the model not only quantitatively describesthe HM<missing VAR> layer thickness dependence of SMR, allowing accurate estimation of thespin Hall angle and the spin diffusion length of the HM<missing VAR> layer, but also canaccount for the temperature dependence of SMR by assuming a temperaturedependent spin polarization of the FM<missing VAR> layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Spin Hall magnetoresistance in metallic bilayers|Junyeon Kim,Peng Sheng,Saburo Takahashi,Seiji Mitani,Masamitsu Hayashi###
(1144459, 1144459)
 We find that the model not only quantitatively describesthe HM<missing VAR> layer thickness dependence of SMR, allowing accurate estimation of thespin Hall angle and the spin diffusion length of the HM<missing VAR> layer, but also canaccount for the temperature dependence of SMR by assuming a temperaturedependent spin polarization of the FM<missing VAR> layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Spin Hall magnetoresistance in metallic bilayers|Junyeon Kim,Peng Sheng,Saburo Takahashi,Seiji Mitani,Masamitsu Hayashi###
(1144501, 1144501)
 These results illustrate theunique role a metallic ferromagnetic layer plays in defining spin transmissionacross the HM<missing VAR>/FM<missing VAR> interface.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Spin Hall magnetoresistance in metallic bilayers|Junyeon Kim,Peng Sheng,Saburo Takahashi,Seiji Mitani,Masamitsu Hayashi###
(1144504, 1144504)
 These results illustrate theunique role a metallic ferromagnetic layer plays in defining spin transmissionacross the HM<missing VAR>/FM<missing VAR> interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PtSn4
###Discovery of Dirac Node Arcs in PtSn4|Yun Wu,Lin-Lin Wang,Eundeok Mun,D. D. Johnson,Daixiang Mou,Lunan Huang,Yongbin Lee,S. L. Budko,P. C. Canfield,Adam Kaminski###
(1144530, 1144532)
Discovery of Dirac Node Arcs in PtSn4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Discovery of Dirac Node Arcs in PtSn4|Yun Wu,Lin-Lin Wang,Eundeok Mun,D. D. Johnson,Daixiang Mou,Lunan Huang,Yongbin Lee,S. L. Budko,P. C. Canfield,Adam Kaminski###
(1144535, 1144535)
 In topological quantum materials the conduction and valence bands areconnected at points (Dirac/Weyl semimetals) or along lines (Line Nodesemimetals) in the momentum space.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PtSn4
###Discovery of Dirac Node Arcs in PtSn4|Yun Wu,Lin-Lin Wang,Eundeok Mun,D. D. Johnson,Daixiang Mou,Lunan Huang,Yongbin Lee,S. L. Budko,P. C. Canfield,Adam Kaminski###
(1144715, 1144717)
 Here we report the discovery ofa novel topological structure - Dirac node arcs - in the ultrahighmagnetoresistive material PtSn4 using laser-based angle-resolved photoemissionspectroscopy (ARPES) data and density functional theory (DFT) calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Discovery of Dirac Node Arcs in PtSn4|Yun Wu,Lin-Lin Wang,Eundeok Mun,D. D. Johnson,Daixiang Mou,Lunan Huang,Yongbin Lee,S. L. Budko,P. C. Canfield,Adam Kaminski###
(1144739, 1144739)
 Here we report the discovery ofa novel topological structure - Dirac node arcs - in the ultrahighmagnetoresistive material PtSn4 using laser-based angle-resolved photoemissionspectroscopy (ARPES) data and density functional theory (DFT) calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaAlO3/Sr
###Observation of Quantum Griffiths Singularity and Ferromagnetism at Superconducting LaAlO3/SrTiO3(110) Interface|Shengchun Shen,Ying Xing,Pengjie Wang,Haiwen Liu,Hai-Long Fu,Yangwei Zhang,Lin He,X. C. Xie,Xi Lin,Jiacai Nie,Jian Wang###
(1144919, 1144924)
Observation of Quantum Griffiths Singularity and Ferromagnetism at Superconducting LaAlO3/SrTiO3(110) Interface.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

O3
###Observation of Quantum Griffiths Singularity and Ferromagnetism at Superconducting LaAlO3/SrTiO3(110) Interface|Shengchun Shen,Ying Xing,Pengjie Wang,Haiwen Liu,Hai-Long Fu,Yangwei Zhang,Lin He,X. C. Xie,Xi Lin,Jiacai Nie,Jian Wang###
(1144926, 1144927)
Observation of Quantum Griffiths Singularity and Ferromagnetism at Superconducting LaAlO3/SrTiO3(110) Interface.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaAlO3
###Observation of Quantum Griffiths Singularity and Ferromagnetism at Superconducting LaAlO3/SrTiO3(110) Interface|Shengchun Shen,Ying Xing,Pengjie Wang,Haiwen Liu,Hai-Long Fu,Yangwei Zhang,Lin He,X. C. Xie,Xi Lin,Jiacai Nie,Jian Wang###
(1144953, 1144956)
 Diverse phenomena emerge at the interface between band insulators LaAlO3 andSrTiO3, such as superconductivity and ferromagnetism, showing an opportunityfor potential applications as well as bringing fundamental research interests.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Observation of Quantum Griffiths Singularity and Ferromagnetism at Superconducting LaAlO3/SrTiO3(110) Interface|Shengchun Shen,Ying Xing,Pengjie Wang,Haiwen Liu,Hai-Long Fu,Yangwei Zhang,Lin He,X. C. Xie,Xi Lin,Jiacai Nie,Jian Wang###
(1144961, 1144964)
 Diverse phenomena emerge at the interface between band insulators LaAlO3 andSrTiO3, such as superconductivity and ferromagnetism, showing an opportunityfor potential applications as well as bringing fundamental research interests.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaAlO3/SrTiO3
###Observation of Quantum Griffiths Singularity and Ferromagnetism at Superconducting LaAlO3/SrTiO3(110) Interface|Shengchun Shen,Ying Xing,Pengjie Wang,Haiwen Liu,Hai-Long Fu,Yangwei Zhang,Lin He,X. C. Xie,Xi Lin,Jiacai Nie,Jian Wang###
(1145024, 1145032)
Particularly, the two-dimensional electron gas formed at LaAlO3/SrTiO3interface offers an appealing platform for quantum phase transition from asuperconductor to a weakly localized metal.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

LaAlO3/Sr
###Observation of Quantum Griffiths Singularity and Ferromagnetism at Superconducting LaAlO3/SrTiO3(110) Interface|Shengchun Shen,Ying Xing,Pengjie Wang,Haiwen Liu,Hai-Long Fu,Yangwei Zhang,Lin He,X. C. Xie,Xi Lin,Jiacai Nie,Jian Wang###
(1145103, 1145108)
 Here we report thesuperconductor-metal transition in superconducting two-dimensional electron gasformed at LaAlO3/SrTiO3(110) interface driven by a perpendicular magneticfield.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

O3
###Observation of Quantum Griffiths Singularity and Ferromagnetism at Superconducting LaAlO3/SrTiO3(110) Interface|Shengchun Shen,Ying Xing,Pengjie Wang,Haiwen Liu,Hai-Long Fu,Yangwei Zhang,Lin He,X. C. Xie,Xi Lin,Jiacai Nie,Jian Wang###
(1145110, 1145111)
 Here we report thesuperconductor-metal transition in superconducting two-dimensional electron gasformed at LaAlO3/SrTiO3(110) interface driven by a perpendicular magneticfield.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaAlO3/Sr
###Observation of Quantum Griffiths Singularity and Ferromagnetism at Superconducting LaAlO3/SrTiO3(110) Interface|Shengchun Shen,Ying Xing,Pengjie Wang,Haiwen Liu,Hai-Long Fu,Yangwei Zhang,Lin He,X. C. Xie,Xi Lin,Jiacai Nie,Jian Wang###
(1145231, 1145236)
 Furthermore, the hysteretic property ofmagnetoresistance was firstly observed at LaAlO3/SrTiO3(110) interfaces, whichsuggests potential coexistence of superconductivity and ferromagnetism.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

O3
###Observation of Quantum Griffiths Singularity and Ferromagnetism at Superconducting LaAlO3/SrTiO3(110) Interface|Shengchun Shen,Ying Xing,Pengjie Wang,Haiwen Liu,Hai-Long Fu,Yangwei Zhang,Lin He,X. C. Xie,Xi Lin,Jiacai Nie,Jian Wang###
(1145238, 1145239)
 Furthermore, the hysteretic property ofmagnetoresistance was firstly observed at LaAlO3/SrTiO3(110) interfaces, whichsuggests potential coexistence of superconductivity and ferromagnetism.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BiFeO3/La0.7Sr0.3MnO3
###Local charge variation enhanced spin canting of BiFeO3/La0.7Sr0.3MnO3 heterostructure|Yuan-Yen Tai,Jian-Xin Zhu###
(1145287, 1145298)
Local charge variation enhanced spin canting of BiFeO3/La0.7Sr0.3MnO3 heterostructure.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Os
###Local charge variation enhanced spin canting of BiFeO3/La0.7Sr0.3MnO3 heterostructure|Yuan-Yen Tai,Jian-Xin Zhu###
(1145312, 1145312)
 Transition-metal oxides (TMOs) exhibit many emergent phenomena ranging fromhigh-temperature super- conductivity and giant magnetoresistance to magnetismand ferroelectricity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Os
###Local charge variation enhanced spin canting of BiFeO3/La0.7Sr0.3MnO3 heterostructure|Yuan-Yen Tai,Jian-Xin Zhu###
(1145357, 1145357)
 When TMOs are interfaced with each other, newmulti-functionalities can arise, which are absent in individual components.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Local charge variation enhanced spin canting of BiFeO3/La0.7Sr0.3MnO3 heterostructure|Yuan-Yen Tai,Jian-Xin Zhu###
(1145395, 1145395)
 Inthis work, we have systematically studied, within a unified double-exchangemodel, the interfacial magnetic response in layered BiFeO3 (BFO) andLa0.7Sr0.3MnO3 (LSMO) heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BiFeO3
###Local charge variation enhanced spin canting of BiFeO3/La0.7Sr0.3MnO3 heterostructure|Yuan-Yen Tai,Jian-Xin Zhu###
(1145438, 1145441)
 Inthis work, we have systematically studied, within a unified double-exchangemodel, the interfacial magnetic response in layered BiFeO3 (BFO) andLa0.7Sr0.3MnO3 (LSMO) heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(BFO)
###Local charge variation enhanced spin canting of BiFeO3/La0.7Sr0.3MnO3 heterostructure|Yuan-Yen Tai,Jian-Xin Zhu###
(1145443, 1145447)
 Inthis work, we have systematically studied, within a unified double-exchangemodel, the interfacial magnetic response in layered BiFeO3 (BFO) andLa0.7Sr0.3MnO3 (LSMO) heterostructures.
Featurization successful!
0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.7Sr0.3MnO3
###Local charge variation enhanced spin canting of BiFeO3/La0.7Sr0.3MnO3 heterostructure|Yuan-Yen Tai,Jian-Xin Zhu###
(1145452, 1145458)
 Inthis work, we have systematically studied, within a unified double-exchangemodel, the interfacial magnetic response in layered BiFeO3 (BFO) andLa0.7Sr0.3MnO3 (LSMO) heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Local charge variation enhanced spin canting of BiFeO3/La0.7Sr0.3MnO3 heterostructure|Yuan-Yen Tai,Jian-Xin Zhu###
(1145464, 1145464)
 Inthis work, we have systematically studied, within a unified double-exchangemodel, the interfacial magnetic response in layered BiFeO3 (BFO) andLa0.7Sr0.3MnO3 (LSMO) heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BFO
###Local charge variation enhanced spin canting of BiFeO3/La0.7Sr0.3MnO3 heterostructure|Yuan-Yen Tai,Jian-Xin Zhu###
(1145497, 1145499)
 The ferromagnetic/antiferromagneticcanting is shown to be enhanced on the interface of BFO by the influence oflocal charge variation.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BFO
###Local charge variation enhanced spin canting of BiFeO3/La0.7Sr0.3MnO3 heterostructure|Yuan-Yen Tai,Jian-Xin Zhu###
(1145539, 1145541)
 More interestingly, it is found that the spin cantingin BFO can be further enhanced with deeper penetration depth to the bulk when alocal oxygen vacancy is placed around the interface.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Flexible MgO barrier magnetic tunnel junctions|Li Ming Loong,Wonho Lee,Xuepeng Qiu,Ping Yang,Hiroyo Kawai,Mark Saeys,Jong-Hyun Ahn,Hyunsoo Yang###
(1145597, 1145598)
Flexible MgO barrier magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Flexible MgO barrier magnetic tunnel junctions|Li Ming Loong,Wonho Lee,Xuepeng Qiu,Ping Yang,Hiroyo Kawai,Mark Saeys,Jong-Hyun Ahn,Hyunsoo Yang###
(1145645, 1145645)
 In particular, memorydevices are the fundamental component for data storage and processing inflexible electronics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Flexible MgO barrier magnetic tunnel junctions|Li Ming Loong,Wonho Lee,Xuepeng Qiu,Ping Yang,Hiroyo Kawai,Mark Saeys,Jong-Hyun Ahn,Hyunsoo Yang###
(1145690, 1145691)
 Here, we present flexible MgO barrier magnetic tunneljunction (MTJ) devices fabricated using a transfer printing process, whichexhibit reliable and stable operation under substantial deformation of thedevice substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Flexible MgO barrier magnetic tunnel junctions|Li Ming Loong,Wonho Lee,Xuepeng Qiu,Ping Yang,Hiroyo Kawai,Mark Saeys,Jong-Hyun Ahn,Hyunsoo Yang###
(1145752, 1145752)
 In addition, the flexible MTJ devices yield significantlyenhanced tunneling magnetoresistance (TMR) of 300 % and improved abruptness ofswitching, as residual strain in the MTJ structure induced by the fabricationprocess is released during the transfer process.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin Hall Effect Induced Spin Transfer Through an Insulator|Wei Chen,Manfred Sigrist,Dirk Manske###
(1146021, 1146021)
 In a normal metal/insulator/ferromagnetic insulatortrilayer (such as Pt/oxide/YIG), the quantum tunneling explains thespin-transfer torque and spin pumping that exponentially decay with thethickness of the insulator.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Spin Hall Effect Induced Spin Transfer Through an Insulator|Wei Chen,Manfred Sigrist,Dirk Manske###
(1146043, 1146043)
 In a normal metal/insulator/ferromagnetic insulatortrilayer (such as Pt/oxide/YIG), the quantum tunneling explains thespin-transfer torque and spin pumping that exponentially decay with thethickness of the insulator.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YI
###Spin Hall Effect Induced Spin Transfer Through an Insulator|Wei Chen,Manfred Sigrist,Dirk Manske###
(1146047, 1146048)
 In a normal metal/insulator/ferromagnetic insulatortrilayer (such as Pt/oxide/YIG), the quantum tunneling explains thespin-transfer torque and spin pumping that exponentially decay with thethickness of the insulator.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin Hall Effect Induced Spin Transfer Through an Insulator|Wei Chen,Manfred Sigrist,Dirk Manske###
(1146096, 1146096)
 In a normal metal/insulator/ferromagnetic metaltrilayer (such as Pt/oxide/Co), the spin transfer in general does not decaymonotonically with the thickness of the insulator.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Spin Hall Effect Induced Spin Transfer Through an Insulator|Wei Chen,Manfred Sigrist,Dirk Manske###
(1146118, 1146118)
 In a normal metal/insulator/ferromagnetic metaltrilayer (such as Pt/oxide/Co), the spin transfer in general does not decaymonotonically with the thickness of the insulator.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Spin Hall Effect Induced Spin Transfer Through an Insulator|Wei Chen,Manfred Sigrist,Dirk Manske###
(1146122, 1146122)
 In a normal metal/insulator/ferromagnetic metaltrilayer (such as Pt/oxide/Co), the spin transfer in general does not decaymonotonically with the thickness of the insulator.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu/Pd
###Theory of spin loss at metallic interfaces|K. D. Belashchenko,Alexey A. Kovalev,M. van Schilfgaarde###
(1146499, 1146501)
 We calculate the spin-fliptransmission probability for flat and rough Cu/Pd interfaces using theLandauer-Buttiker method based on the first-principles electronic structureand find delta in reasonable agreement with experiment.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

B
###Theory of spin loss at metallic interfaces|K. D. Belashchenko,Alexey A. Kovalev,M. van Schilfgaarde###
(1146512, 1146512)
 We calculate the spin-fliptransmission probability for flat and rough Cu/Pd interfaces using theLandauer-Buttiker method based on the first-principles electronic structureand find delta in reasonable agreement with experiment.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SN
###Magnetic field-dependent inhomogeneities and their effect on the magnetoresponse of 2D superconductors|Sarath Sankar,Vikram Tripathi###
(1146646, 1146647)
 We show that inhomogeneities in the spatial distribution of Cooper pairs andin the phase of the local superconducting order parameter in the vicinity of asuperconductor-normal state transition (SNT) in two dimensions can be highlysensitive to a perpendicular magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 2, 'D', 1]

SN
###Magnetic field-dependent inhomogeneities and their effect on the magnetoresponse of 2D superconductors|Sarath Sankar,Vikram Tripathi###
(1146832, 1146833)
 Followingthis approach, we obtain explicit expressions for the field dependence ofmagnetoresistance and superfluid stiffness near the SNT<missing VAR>, and attempt anunderstanding of some recent experimental findings.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[254.0, 2, 'D', 4]

N
###Anomalous tunnel magnetoresistance and spin transfer torque in magnetic tunnel junctions with embedded nanoparticles|Arthur Useinov,Lin-Xiu Ye,Niazbeck Useinov,Te-Ho Wu,Chih-Huang Lai###
(1146930, 1146930)
 The tunnel magnetoresistance (TMR) in the magnetic tunnel junction (MTJ) withembedded nanoparticles (NPs) was calculated in range of the quantum-ballisticmodel.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Anomalous tunnel magnetoresistance and spin transfer torque in magnetic tunnel junctions with embedded nanoparticles|Arthur Useinov,Lin-Xiu Ye,Niazbeck Useinov,Te-Ho Wu,Chih-Huang Lai###
(1146987, 1146987)
 The simulation was performed for electron tunneling through theinsulating layer with embedded magnetic and nonmagnetic NPs within the approachof the double barrier subsystem connected in parallel to the single barrierone.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Anomalous tunnel magnetoresistance and spin transfer torque in magnetic tunnel junctions with embedded nanoparticles|Arthur Useinov,Lin-Xiu Ye,Niazbeck Useinov,Te-Ho Wu,Chih-Huang Lai###
(1147085, 1147085)
 We also calculated the in-plane component of the spintransfer torque (STT) versus the applied voltage in MTJs with magnetic NPs anddetermined that its value can be much larger than in single barrier system(SBS) for the same tunneling thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Anomalous tunnel magnetoresistance and spin transfer torque in magnetic tunnel junctions with embedded nanoparticles|Arthur Useinov,Lin-Xiu Ye,Niazbeck Useinov,Te-Ho Wu,Chih-Huang Lai###
(1147108, 1147108)
 We also calculated the in-plane component of the spintransfer torque (STT) versus the applied voltage in MTJs with magnetic NPs anddetermined that its value can be much larger than in single barrier system(SBS) for the same tunneling thickness.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(SBS)
###Anomalous tunnel magnetoresistance and spin transfer torque in magnetic tunnel junctions with embedded nanoparticles|Arthur Useinov,Lin-Xiu Ye,Niazbeck Useinov,Te-Ho Wu,Chih-Huang Lai###
(1147141, 1147145)
 We also calculated the in-plane component of the spintransfer torque (STT) versus the applied voltage in MTJs with magnetic NPs anddetermined that its value can be much larger than in single barrier system(SBS) for the same tunneling thickness.
Featurization successful!
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Tunnel magnetoresistance and temperature related effects in magnetic tunnel junctions with embedded nanoparticles|Arthur Useinov,Chih-Huang Lai###
(1147303, 1147303)
 Temperature dependence of the tunnel magnetoresistance (TMR) was calculatedin range of the quantum-ballistic model in the magnetic tunnel junctions (MTJs)with embedded nanoparticles (NPs).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NP
###Tunnel magnetoresistance and temperature related effects in magnetic tunnel junctions with embedded nanoparticles|Arthur Useinov,Chih-Huang Lai###
(1147318, 1147319)
 The electron tunnel transport through NP wassimulated in range of double barrier approach, which was integrated into themodel of the magnetic point-like contact.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu0.85Ni0.15MnSb
###Revealing the nature of magnetic phases in the semi-Heusler alloy Cu0.85Ni0.15MnSb|Madhumita Halder,K. G. Suresh,M. D. Mukadam,S. M. Yusuf###
(1147597, 1147602)
Revealing the nature of magnetic phases in the semi-Heusler alloy Cu0.85Ni0.15MnSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0.049999999999999996,0.2833333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[218.0, 45, 'K', 5],[235.0, 45, 'K', 5]

Cu0.85Ni0.15MnSb
###Revealing the nature of magnetic phases in the semi-Heusler alloy Cu0.85Ni0.15MnSb|Madhumita Halder,K. G. Suresh,M. D. Mukadam,S. M. Yusuf###
(1147634, 1147639)
 We report the magnetic, magnetocaloric, and magnetotransport properties ofthe semi-Heusler alloy Cu0.85Ni0.15MnSb, which exhibits coexistence ofantiferromagnetic (AFM) and ferromagnetic (FM) phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0.049999999999999996,0.2833333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 45, 'K', 4],[198.0, 45, 'K', 4]

F
###Revealing the nature of magnetic phases in the semi-Heusler alloy Cu0.85Ni0.15MnSb|Madhumita Halder,K. G. Suresh,M. D. Mukadam,S. M. Yusuf###
(1147655, 1147655)
 We report the magnetic, magnetocaloric, and magnetotransport properties ofthe semi-Heusler alloy Cu0.85Ni0.15MnSb, which exhibits coexistence ofantiferromagnetic (AFM) and ferromagnetic (FM) phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 45, 'K', 4],[182.0, 45, 'K', 4]

F
###Revealing the nature of magnetic phases in the semi-Heusler alloy Cu0.85Ni0.15MnSb|Madhumita Halder,K. G. Suresh,M. D. Mukadam,S. M. Yusuf###
(1147664, 1147664)
 We report the magnetic, magnetocaloric, and magnetotransport properties ofthe semi-Heusler alloy Cu0.85Ni0.15MnSb, which exhibits coexistence ofantiferromagnetic (AFM) and ferromagnetic (FM) phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 45, 'K', 4],[173.0, 45, 'K', 4]

F
###Revealing the nature of magnetic phases in the semi-Heusler alloy Cu0.85Ni0.15MnSb|Madhumita Halder,K. G. Suresh,M. D. Mukadam,S. M. Yusuf###
(1147734, 1147734)
 This is due to the presenceof both AFM<missing VAR> and FM<missing VAR> phases at low temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 45, 'K', 2],[103.0, 45, 'K', 2]

F
###Revealing the nature of magnetic phases in the semi-Heusler alloy Cu0.85Ni0.15MnSb|Madhumita Halder,K. G. Suresh,M. D. Mukadam,S. M. Yusuf###
(1147739, 1147739)
 This is due to the presenceof both AFM<missing VAR> and FM<missing VAR> phases at low temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 45, 'K', 2],[98.0, 45, 'K', 2]

F
###Revealing the nature of magnetic phases in the semi-Heusler alloy Cu0.85Ni0.15MnSb|Madhumita Halder,K. G. Suresh,M. D. Mukadam,S. M. Yusuf###
(1147804, 1147804)
The magnetoresistance (MR) results also show the presence of AFM<missing VAR> and FM<missing VAR> phasesat temperatures below 45 K, and a FM<missing VAR> phase at temperature above 45K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 45, 'K', 0],[33.0, 45, 'K', 0]

F
###Revealing the nature of magnetic phases in the semi-Heusler alloy Cu0.85Ni0.15MnSb|Madhumita Halder,K. G. Suresh,M. D. Mukadam,S. M. Yusuf###
(1147809, 1147809)
The magnetoresistance (MR) results also show the presence of AFM<missing VAR> and FM<missing VAR> phasesat temperatures below 45 K, and a FM<missing VAR> phase at temperature above 45K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 45, 'K', 0],[28.0, 45, 'K', 0]

F
###Revealing the nature of magnetic phases in the semi-Heusler alloy Cu0.85Ni0.15MnSb|Madhumita Halder,K. G. Suresh,M. D. Mukadam,S. M. Yusuf###
(1147827, 1147827)
The magnetoresistance (MR) results also show the presence of AFM<missing VAR> and FM<missing VAR> phasesat temperatures below 45 K, and a FM<missing VAR> phase at temperature above 45K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 45, 'K', 0],[10.0, 45, 'K', 0]

Co
###Strong pinning of vortices by antiferromagnetic domain boundaries in CeCo(In$_{1-x}$Cd$_x$)$_5$|Dong-Jin Jang,Luis Pedrero,L. D. Pham,Z. Fisk,Manuel Brando###
(1147926, 1147926)
Strong pinning of vortices by antiferromagnetic domain boundaries in CeCo(In1-xCdx)5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 0.0075, 'and', 1],[49.0, 0.01, 'down', 1],[52.0, 50, 'mK', 1]

In1-xCd
###Strong pinning of vortices by antiferromagnetic domain boundaries in CeCo(In$_{1-x}$Cd$_x$)$_5$|Dong-Jin Jang,Luis Pedrero,L. D. Pham,Z. Fisk,Manuel Brando###
(1147928, 1147932)
Strong pinning of vortices by antiferromagnetic domain boundaries in CeCo(In1-xCdx)5.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[42.0, 0.0075, 'and', 1],[43.0, 0.01, 'down', 1],[46.0, 50, 'mK', 1]

(H)
###Strong pinning of vortices by antiferromagnetic domain boundaries in CeCo(In$_{1-x}$Cd$_x$)$_5$|Dong-Jin Jang,Luis Pedrero,L. D. Pham,Z. Fisk,Manuel Brando###
(1147951, 1147953)
 We have studied the isothermal magnetization M<missing VAR>(H) ofCeCo(In1-xCdx)5 with x<missing VAR>  0.0075 and 0.01 down to 50 mK.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 0.0075, 'and', 0],[22.0, 0.01, 'down', 0],[25.0, 50, 'mK', 0]

Co
###Strong pinning of vortices by antiferromagnetic domain boundaries in CeCo(In$_{1-x}$Cd$_x$)$_5$|Dong-Jin Jang,Luis Pedrero,L. D. Pham,Z. Fisk,Manuel Brando###
(1147959, 1147959)
 We have studied the isothermal magnetization M<missing VAR>(H) ofCeCo(In1-xCdx)5 with x<missing VAR>  0.0075 and 0.01 down to 50 mK.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 0.0075, 'and', 0],[16.0, 0.01, 'down', 0],[19.0, 50, 'mK', 0]

In1-xCd
###Strong pinning of vortices by antiferromagnetic domain boundaries in CeCo(In$_{1-x}$Cd$_x$)$_5$|Dong-Jin Jang,Luis Pedrero,L. D. Pham,Z. Fisk,Manuel Brando###
(1147961, 1147965)
 We have studied the isothermal magnetization M<missing VAR>(H) ofCeCo(In1-xCdx)5 with x<missing VAR>  0.0075 and 0.01 down to 50 mK.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[9.0, 0.0075, 'and', 0],[10.0, 0.01, 'down', 0],[13.0, 50, 'mK', 0]

At
###Strong pinning of vortices by antiferromagnetic domain boundaries in CeCo(In$_{1-x}$Cd$_x$)$_5$|Dong-Jin Jang,Luis Pedrero,L. D. Pham,Z. Fisk,Manuel Brando###
(1148016, 1148016)
 At low-fields, a phenomenologicalmodel of magnetic-flux entry well explains M<missing VAR>(H) implying the dominance ofbulk pinning effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 0.0075, 'and', 2],[41.0, 0.01, 'down', 2],[38.0, 50, 'mK', 2]

(H)
###Strong pinning of vortices by antiferromagnetic domain boundaries in CeCo(In$_{1-x}$Cd$_x$)$_5$|Dong-Jin Jang,Luis Pedrero,L. D. Pham,Z. Fisk,Manuel Brando###
(1148043, 1148045)
 At low-fields, a phenomenologicalmodel of magnetic-flux entry well explains M<missing VAR>(H) implying the dominance ofbulk pinning effect.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 0.0075, 'and', 2],[68.0, 0.01, 'down', 2],[65.0, 50, 'mK', 2]

SP
###Strong pinning of vortices by antiferromagnetic domain boundaries in CeCo(In$_{1-x}$Cd$_x$)$_5$|Dong-Jin Jang,Luis Pedrero,L. D. Pham,Z. Fisk,Manuel Brando###
(1148090, 1148091)
 However, unless crystallographic quenched disorder ishysteretic, the asymmetric peak effect (ASPE) which appears at higher fieldscannot be explained by the pinning of vortices due to material defects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 0.0075, 'and', 3],[115.0, 0.01, 'down', 3],[112.0, 50, 'mK', 3]

SP
###Strong pinning of vortices by antiferromagnetic domain boundaries in CeCo(In$_{1-x}$Cd$_x$)$_5$|Dong-Jin Jang,Luis Pedrero,L. D. Pham,Z. Fisk,Manuel Brando###
(1148145, 1148146)
 Alsothe temperature dependence of the ASPE<missing VAR> deviates from the conventional scenariofor the peak effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[171.0, 0.0075, 'and', 4],[170.0, 0.01, 'down', 4],[167.0, 50, 'mK', 4]

(BP)
###Topological Phase Transition and Chiral-Anomaly Driven Negative Magneto-Resistance in Bulk Black Phosphorus|Chun-Hong Li,Yu-Jia Long,Ling-Xiao Zhao,Lei Shan,Zhi-An Ren,Jian-Zhou Zhao,Hong-Ming Weng,Xi Dai,Zhong Fang,Gen-Fu Chen,Cong Ren###
(1148303, 1148306)
 We report the anisotropic magneto-transport measurement on a non-compoundband semiconductor black phosphorus (BP) with magnetic field B up to 16 Teslaapplied in both perpendicular and parallel to electric current I underhydrostatic pressures.
Featurization successful!
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 16, 'Tesla', 0]

B
###Topological Phase Transition and Chiral-Anomaly Driven Negative Magneto-Resistance in Bulk Black Phosphorus|Chun-Hong Li,Yu-Jia Long,Ling-Xiao Zhao,Lei Shan,Zhi-An Ren,Jian-Zhou Zhao,Hong-Ming Weng,Xi Dai,Zhong Fang,Gen-Fu Chen,Cong Ren###
(1148314, 1148314)
 We report the anisotropic magneto-transport measurement on a non-compoundband semiconductor black phosphorus (BP) with magnetic field B up to 16 Teslaapplied in both perpendicular and parallel to electric current I underhydrostatic pressures.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 16, 'Tesla', 0]

I
###Topological Phase Transition and Chiral-Anomaly Driven Negative Magneto-Resistance in Bulk Black Phosphorus|Chun-Hong Li,Yu-Jia Long,Ling-Xiao Zhao,Lei Shan,Zhi-An Ren,Jian-Zhou Zhao,Hong-Ming Weng,Xi Dai,Zhong Fang,Gen-Fu Chen,Cong Ren###
(1148340, 1148340)
 We report the anisotropic magneto-transport measurement on a non-compoundband semiconductor black phosphorus (BP) with magnetic field B up to 16 Teslaapplied in both perpendicular and parallel to electric current I underhydrostatic pressures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 16, 'Tesla', 0]

BP
###Topological Phase Transition and Chiral-Anomaly Driven Negative Magneto-Resistance in Bulk Black Phosphorus|Chun-Hong Li,Yu-Jia Long,Ling-Xiao Zhao,Lei Shan,Zhi-An Ren,Jian-Zhou Zhao,Hong-Ming Weng,Xi Dai,Zhong Fang,Gen-Fu Chen,Cong Ren###
(1148352, 1148353)
 The BP undergoes a topological Lifshitz transition fromband semiconductor to a zero-gap Dirac semimetal state, characterized by a weaklocalization-weak antilocaliation transition at low magnetic fields and theemergence of a nontrivial Berry Phase of detected by SdH magneto-oscillationsin magnetoresistance curves.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 16, 'Tesla', 1]

H
###Topological Phase Transition and Chiral-Anomaly Driven Negative Magneto-Resistance in Bulk Black Phosphorus|Chun-Hong Li,Yu-Jia Long,Ling-Xiao Zhao,Lei Shan,Zhi-An Ren,Jian-Zhou Zhao,Hong-Ming Weng,Xi Dai,Zhong Fang,Gen-Fu Chen,Cong Ren###
(1148436, 1148436)
 The BP undergoes a topological Lifshitz transition fromband semiconductor to a zero-gap Dirac semimetal state, characterized by a weaklocalization-weak antilocaliation transition at low magnetic fields and theemergence of a nontrivial Berry Phase of detected by SdH magneto-oscillationsin magnetoresistance curves.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 16, 'Tesla', 1]

In
###Topological Phase Transition and Chiral-Anomaly Driven Negative Magneto-Resistance in Bulk Black Phosphorus|Chun-Hong Li,Yu-Jia Long,Ling-Xiao Zhao,Lei Shan,Zhi-An Ren,Jian-Zhou Zhao,Hong-Ming Weng,Xi Dai,Zhong Fang,Gen-Fu Chen,Cong Ren###
(1148450, 1148450)
 In the transition region, we observe apressure-dependent negative MR only in the B//I configuration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 16, 'Tesla', 2]

B
###Topological Phase Transition and Chiral-Anomaly Driven Negative Magneto-Resistance in Bulk Black Phosphorus|Chun-Hong Li,Yu-Jia Long,Ling-Xiao Zhao,Lei Shan,Zhi-An Ren,Jian-Zhou Zhao,Hong-Ming Weng,Xi Dai,Zhong Fang,Gen-Fu Chen,Cong Ren###
(1148481, 1148481)
 In the transition region, we observe apressure-dependent negative MR only in the B//I configuration.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 16, 'Tesla', 2]

I
###Topological Phase Transition and Chiral-Anomaly Driven Negative Magneto-Resistance in Bulk Black Phosphorus|Chun-Hong Li,Yu-Jia Long,Ling-Xiao Zhao,Lei Shan,Zhi-An Ren,Jian-Zhou Zhao,Hong-Ming Weng,Xi Dai,Zhong Fang,Gen-Fu Chen,Cong Ren###
(1148484, 1148484)
 In the transition region, we observe apressure-dependent negative MR only in the B//I configuration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 16, 'Tesla', 2]

B
###Topological Phase Transition and Chiral-Anomaly Driven Negative Magneto-Resistance in Bulk Black Phosphorus|Chun-Hong Li,Yu-Jia Long,Ling-Xiao Zhao,Lei Shan,Zhi-An Ren,Jian-Zhou Zhao,Hong-Ming Weng,Xi Dai,Zhong Fang,Gen-Fu Chen,Cong Ren###
(1148521, 1148521)
 This negativelongitudinal MR is attributed to the Adler-Bell-Jackiw anomaly (topologicalE<missing VAR>cdotB term) in the presence of weak antilocalization corrections.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[202.0, 16, 'Tesla', 3]

(III)
###Spintronics Detection of Interfacial Magnetic Switching in a Paramagnetic Tris(8-hydroxyquinoline)iron(III) Thin Film|Dali Sun,Christopher M. Kareis,Kipp J. van Schooten,Wei Jiang,Gene Siegel,Marzieh Kavand,Royce A. Davidson,William W. Shum,Chuang Zhang,Ashutosh Tiwari,Christoph Boehme,Feng Liu,Peter W. Stephens,Joel S. Miller,Z. Valy Vardeny###
(1148574, 1148578)
Spintronics Detection of Interfacial Magnetic Switching in a Paramagnetic Tris(8-hydroxyquinoline)iron(III) Thin Film.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Spintronics Detection of Interfacial Magnetic Switching in a Paramagnetic Tris(8-hydroxyquinoline)iron(III) Thin Film|Dali Sun,Christopher M. Kareis,Kipp J. van Schooten,Wei Jiang,Gene Siegel,Marzieh Kavand,Royce A. Davidson,William W. Shum,Chuang Zhang,Ashutosh Tiwari,Christoph Boehme,Feng Liu,Peter W. Stephens,Joel S. Miller,Z. Valy Vardeny###
(1148654, 1148654)
 The organic materials are used as interlayers betweentwo ferromagnet (FM) electrodes in organic spin valves (OSV), as well as formagnetic spin manipulation of metal-organic complexes at the molecular level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(OSV)
###Spintronics Detection of Interfacial Magnetic Switching in a Paramagnetic Tris(8-hydroxyquinoline)iron(III) Thin Film|Dali Sun,Christopher M. Kareis,Kipp J. van Schooten,Wei Jiang,Gene Siegel,Marzieh Kavand,Royce A. Davidson,William W. Shum,Chuang Zhang,Ashutosh Tiwari,Christoph Boehme,Feng Liu,Peter W. Stephens,Joel S. Miller,Z. Valy Vardeny###
(1148668, 1148672)
 The organic materials are used as interlayers betweentwo ferromagnet (FM) electrodes in organic spin valves (OSV), as well as formagnetic spin manipulation of metal-organic complexes at the molecular level.
Featurization successful!
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spintronics Detection of Interfacial Magnetic Switching in a Paramagnetic Tris(8-hydroxyquinoline)iron(III) Thin Film|Dali Sun,Christopher M. Kareis,Kipp J. van Schooten,Wei Jiang,Gene Siegel,Marzieh Kavand,Royce A. Davidson,William W. Shum,Chuang Zhang,Ashutosh Tiwari,Christoph Boehme,Feng Liu,Peter W. Stephens,Joel S. Miller,Z. Valy Vardeny###
(1148708, 1148708)
In the latter, specifically, the substrate-induced magnetic switching in aparamagnetic molecule has been evoked extensively, but studied by delicatesurface spectroscopies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(III)
###Spintronics Detection of Interfacial Magnetic Switching in a Paramagnetic Tris(8-hydroxyquinoline)iron(III) Thin Film|Dali Sun,Christopher M. Kareis,Kipp J. van Schooten,Wei Jiang,Gene Siegel,Marzieh Kavand,Royce A. Davidson,William W. Shum,Chuang Zhang,Ashutosh Tiwari,Christoph Boehme,Feng Liu,Peter W. Stephens,Joel S. Miller,Z. Valy Vardeny###
(1148806, 1148810)
 Here we present evidence of the substantial magneticswitching in a nanosized thin film of the paramagnetic molecule,tris(8-hydroxyquinoline)iron(III) (Feq3) deposited on a FM<missing VAR> substrate, using themagnetoresistance response of electrical spin-injection in an OSV structure,and the inverse-spin-Hall effect induced by state-of-art pulsed microwavespin-pumping.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Spintronics Detection of Interfacial Magnetic Switching in a Paramagnetic Tris(8-hydroxyquinoline)iron(III) Thin Film|Dali Sun,Christopher M. Kareis,Kipp J. van Schooten,Wei Jiang,Gene Siegel,Marzieh Kavand,Royce A. Davidson,William W. Shum,Chuang Zhang,Ashutosh Tiwari,Christoph Boehme,Feng Liu,Peter W. Stephens,Joel S. Miller,Z. Valy Vardeny###
(1148823, 1148823)
 Here we present evidence of the substantial magneticswitching in a nanosized thin film of the paramagnetic molecule,tris(8-hydroxyquinoline)iron(III) (Feq3) deposited on a FM<missing VAR> substrate, using themagnetoresistance response of electrical spin-injection in an OSV structure,and the inverse-spin-Hall effect induced by state-of-art pulsed microwavespin-pumping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OSV
###Spintronics Detection of Interfacial Magnetic Switching in a Paramagnetic Tris(8-hydroxyquinoline)iron(III) Thin Film|Dali Sun,Christopher M. Kareis,Kipp J. van Schooten,Wei Jiang,Gene Siegel,Marzieh Kavand,Royce A. Davidson,William W. Shum,Chuang Zhang,Ashutosh Tiwari,Christoph Boehme,Feng Liu,Peter W. Stephens,Joel S. Miller,Z. Valy Vardeny###
(1148850, 1148852)
 Here we present evidence of the substantial magneticswitching in a nanosized thin film of the paramagnetic molecule,tris(8-hydroxyquinoline)iron(III) (Feq3) deposited on a FM<missing VAR> substrate, using themagnetoresistance response of electrical spin-injection in an OSV structure,and the inverse-spin-Hall effect induced by state-of-art pulsed microwavespin-pumping.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Change-over of carrier type and magneto-transport property in Cu doped Bi2Te3 Topological Insulators|Abhishek Singh,Rahul Singh,A. Lakhani,T. Patel,G. S. Okram,V. Ganeshan,A. K. Ghosh,Sandip Chatterjee###
(1148981, 1148981)
Change-over of carrier type and magneto-transport property in Cu doped Bi2Te3 Topological Insulators.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Te3
###Change-over of carrier type and magneto-transport property in Cu doped Bi2Te3 Topological Insulators|Abhishek Singh,Rahul Singh,A. Lakhani,T. Patel,G. S. Okram,V. Ganeshan,A. K. Ghosh,Sandip Chatterjee###
(1148985, 1148988)
Change-over of carrier type and magneto-transport property in Cu doped Bi2Te3 Topological Insulators.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Change-over of carrier type and magneto-transport property in Cu doped Bi2Te3 Topological Insulators|Abhishek Singh,Rahul Singh,A. Lakhani,T. Patel,G. S. Okram,V. Ganeshan,A. K. Ghosh,Sandip Chatterjee###
(1149016, 1149016)
 Structural, resistivity, thermoelectric power and magneto-transportproperties of Cu doped Bi2Te3 topological insulators have been investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Te3
###Change-over of carrier type and magneto-transport property in Cu doped Bi2Te3 Topological Insulators|Abhishek Singh,Rahul Singh,A. Lakhani,T. Patel,G. S. Okram,V. Ganeshan,A. K. Ghosh,Sandip Chatterjee###
(1149020, 1149023)
 Structural, resistivity, thermoelectric power and magneto-transportproperties of Cu doped Bi2Te3 topological insulators have been investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Change-over of carrier type and magneto-transport property in Cu doped Bi2Te3 Topological Insulators|Abhishek Singh,Rahul Singh,A. Lakhani,T. Patel,G. S. Okram,V. Ganeshan,A. K. Ghosh,Sandip Chatterjee###
(1149067, 1149067)
The occurrence of the tuning of charge carriers from n<missing VAR> type to p<missing VAR> type by Cudoping at Te sites of Bi2Te3 is observed both from Hall effect andthermoelectric power measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Te
###Change-over of carrier type and magneto-transport property in Cu doped Bi2Te3 Topological Insulators|Abhishek Singh,Rahul Singh,A. Lakhani,T. Patel,G. S. Okram,V. Ganeshan,A. K. Ghosh,Sandip Chatterjee###
(1149074, 1149074)
The occurrence of the tuning of charge carriers from n<missing VAR> type to p<missing VAR> type by Cudoping at Te sites of Bi2Te3 is observed both from Hall effect andthermoelectric power measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Te3
###Change-over of carrier type and magneto-transport property in Cu doped Bi2Te3 Topological Insulators|Abhishek Singh,Rahul Singh,A. Lakhani,T. Patel,G. S. Okram,V. Ganeshan,A. K. Ghosh,Sandip Chatterjee###
(1149080, 1149083)
The occurrence of the tuning of charge carriers from n<missing VAR> type to p<missing VAR> type by Cudoping at Te sites of Bi2Te3 is observed both from Hall effect andthermoelectric power measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Change-over of carrier type and magneto-transport property in Cu doped Bi2Te3 Topological Insulators|Abhishek Singh,Rahul Singh,A. Lakhani,T. Patel,G. S. Okram,V. Ganeshan,A. K. Ghosh,Sandip Chatterjee###
(1149122, 1149122)
 Carrier mobility decreases with the dopingof Cu which provides evidence of the movement of Fermi level from bulkconduction band to the bulk valence band.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Change-over of carrier type and magneto-transport property in Cu doped Bi2Te3 Topological Insulators|Abhishek Singh,Rahul Singh,A. Lakhani,T. Patel,G. S. Okram,V. Ganeshan,A. K. Ghosh,Sandip Chatterjee###
(1149175, 1149175)
 Thermoelectric power alsoincreaseswith doping of Cu.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Te3
###Change-over of carrier type and magneto-transport property in Cu doped Bi2Te3 Topological Insulators|Abhishek Singh,Rahul Singh,A. Lakhani,T. Patel,G. S. Okram,V. Ganeshan,A. K. Ghosh,Sandip Chatterjee###
(1149208, 1149211)
Moreover linear magnetoresistance (LMR) has beenobserved at high magnetic field in pure Bi2Te3 which is associated to thegapless topological surface states protected by time reversal symmetry (TRS),whereas doping of Cu breaks TRS and an opening of band gap occurs whichquenches the LMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Change-over of carrier type and magneto-transport property in Cu doped Bi2Te3 Topological Insulators|Abhishek Singh,Rahul Singh,A. Lakhani,T. Patel,G. S. Okram,V. Ganeshan,A. K. Ghosh,Sandip Chatterjee###
(1149245, 1149245)
Moreover linear magnetoresistance (LMR) has beenobserved at high magnetic field in pure Bi2Te3 which is associated to thegapless topological surface states protected by time reversal symmetry (TRS),whereas doping of Cu breaks TRS and an opening of band gap occurs whichquenches the LMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Change-over of carrier type and magneto-transport property in Cu doped Bi2Te3 Topological Insulators|Abhishek Singh,Rahul Singh,A. Lakhani,T. Patel,G. S. Okram,V. Ganeshan,A. K. Ghosh,Sandip Chatterjee###
(1149256, 1149256)
Moreover linear magnetoresistance (LMR) has beenobserved at high magnetic field in pure Bi2Te3 which is associated to thegapless topological surface states protected by time reversal symmetry (TRS),whereas doping of Cu breaks TRS and an opening of band gap occurs whichquenches the LMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Change-over of carrier type and magneto-transport property in Cu doped Bi2Te3 Topological Insulators|Abhishek Singh,Rahul Singh,A. Lakhani,T. Patel,G. S. Okram,V. Ganeshan,A. K. Ghosh,Sandip Chatterjee###
(1149262, 1149262)
Moreover linear magnetoresistance (LMR) has beenobserved at high magnetic field in pure Bi2Te3 which is associated to thegapless topological surface states protected by time reversal symmetry (TRS),whereas doping of Cu breaks TRS and an opening of band gap occurs whichquenches the LMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaAlO3/SrTiO3
###The mechanism of spin-orbit coupling in a 2D oxide interface|Patrick Seiler,Jone Zabaleta,Robin Wanke,Jochen Mannhart,Thilo Kopp,Daniel Braak###
(1149444, 1149452)
 We thereforeanalyze the transport of LaAlO3/SrTiO3 interfaces under high pressures, atechnique to single out the multi-band contributions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[131.0, 2, 'D', 3],[77.0, 2, 'D', 2],[105.0, 2, 'D', 2]

HgCr2Se4
###Spin correlations and colossal magnetoresistance in HgCr$_2$Se$_4$|Chaojing Lin,Changjiang Yi,Youguo Shi,Lei Zhang,Guangming Zhang,Jens Mueller,Yongqing Li###
(1149654, 1149658)
Spin correlations and colossal magnetoresistance in HgCr2Se4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 105, 'K', 1]

C
###Spin correlations and colossal magnetoresistance in HgCr$_2$Se$_4$|Chaojing Lin,Changjiang Yi,Youguo Shi,Lei Zhang,Guangming Zhang,Jens Mueller,Yongqing Li###
(1149682, 1149682)
 This study aims to unravel the mechanism of colossal magnetoresistance (CMR)observed in n<missing VAR>-type HgCr2Se4, in which low-density conduction electronsare exchange-coupled to a three-dimensional Heisenberg ferromagnet with a Curietemperature T<missing VAR>Capprox 105 K.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 105, 'K', 0]

HgCr2Se4
###Spin correlations and colossal magnetoresistance in HgCr$_2$Se$_4$|Chaojing Lin,Changjiang Yi,Youguo Shi,Lei Zhang,Guangming Zhang,Jens Mueller,Yongqing Li###
(1149696, 1149700)
 This study aims to unravel the mechanism of colossal magnetoresistance (CMR)observed in n<missing VAR>-type HgCr2Se4, in which low-density conduction electronsare exchange-coupled to a three-dimensional Heisenberg ferromagnet with a Curietemperature T<missing VAR>Capprox 105 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 105, 'K', 0]

C
###Spin correlations and colossal magnetoresistance in HgCr$_2$Se$_4$|Chaojing Lin,Changjiang Yi,Youguo Shi,Lei Zhang,Guangming Zhang,Jens Mueller,Yongqing Li###
(1149744, 1149744)
 This study aims to unravel the mechanism of colossal magnetoresistance (CMR)observed in n<missing VAR>-type HgCr2Se4, in which low-density conduction electronsare exchange-coupled to a three-dimensional Heisenberg ferromagnet with a Curietemperature T<missing VAR>Capprox 105 K.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 105, 'K', 0]

As
###Spin correlations and colossal magnetoresistance in HgCr$_2$Se$_4$|Chaojing Lin,Changjiang Yi,Youguo Shi,Lei Zhang,Guangming Zhang,Jens Mueller,Yongqing Li###
(1149773, 1149773)
 As temperature drops belowT<missing VAR>simeq2.1T<missing VAR>C, the magnetic susceptibility deviates from the Curie-Weisslaw, and concomitantly the transport enters an intermediate regime exhibiting apronounced CMR effect before a transition to metallic conduction occurs atT<TC.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 105, 'K', 2]

C
###Spin correlations and colossal magnetoresistance in HgCr$_2$Se$_4$|Chaojing Lin,Changjiang Yi,Youguo Shi,Lei Zhang,Guangming Zhang,Jens Mueller,Yongqing Li###
(1149786, 1149786)
 As temperature drops belowT<missing VAR>simeq2.1T<missing VAR>C, the magnetic susceptibility deviates from the Curie-Weisslaw, and concomitantly the transport enters an intermediate regime exhibiting apronounced CMR effect before a transition to metallic conduction occurs atT<TC.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 105, 'K', 2]

C
###Spin correlations and colossal magnetoresistance in HgCr$_2$Se$_4$|Chaojing Lin,Changjiang Yi,Youguo Shi,Lei Zhang,Guangming Zhang,Jens Mueller,Yongqing Li###
(1149832, 1149832)
 As temperature drops belowT<missing VAR>simeq2.1T<missing VAR>C, the magnetic susceptibility deviates from the Curie-Weisslaw, and concomitantly the transport enters an intermediate regime exhibiting apronounced CMR effect before a transition to metallic conduction occurs atT<TC.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 105, 'K', 2]

C
###Spin correlations and colossal magnetoresistance in HgCr$_2$Se$_4$|Chaojing Lin,Changjiang Yi,Youguo Shi,Lei Zhang,Guangming Zhang,Jens Mueller,Yongqing Li###
(1149858, 1149858)
 As temperature drops belowT<missing VAR>simeq2.1T<missing VAR>C, the magnetic susceptibility deviates from the Curie-Weisslaw, and concomitantly the transport enters an intermediate regime exhibiting apronounced CMR effect before a transition to metallic conduction occurs atT<TC.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 105, 'K', 2]

C
###Spin correlations and colossal magnetoresistance in HgCr$_2$Se$_4$|Chaojing Lin,Changjiang Yi,Youguo Shi,Lei Zhang,Guangming Zhang,Jens Mueller,Yongqing Li###
(1149912, 1149912)
 Our results suggest an important role of spin correlations not onlynear the critical point, but also for a wide range of temperatures(T<missing VAR>C<T<T) in the paramagnetic phase.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 105, 'K', 3]

In
###Spin correlations and colossal magnetoresistance in HgCr$_2$Se$_4$|Chaojing Lin,Changjiang Yi,Youguo Shi,Lei Zhang,Guangming Zhang,Jens Mueller,Yongqing Li###
(1149928, 1149928)
 In this intermediate temperatureregime the transport undergoes a percolation type of transition from isolatedmagnetic polarons to a continuous network when temperature is lowered ormagnetic field becomes stronger.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[182.0, 105, 'K', 4]

NbP
###Chiral magnetoresistance in the Weyl semimetal NbP|Anna Corinna Niemann,Johannes Gooth,Shu-Chun Wu,Svenja Bäßler,Philip Sergelius,Ruben Hühne,Bernd Rellinghaus,Chandra Shekhar,Vicky Süß,Marcus Schmidt,Claudia Felser,Binghai Yan,Kornelius Nielsch###
(1150289, 1150290)
Chiral magnetoresistance in the Weyl semimetal NbP.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbP
###Chiral magnetoresistance in the Weyl semimetal NbP|Anna Corinna Niemann,Johannes Gooth,Shu-Chun Wu,Svenja Bäßler,Philip Sergelius,Ruben Hühne,Bernd Rellinghaus,Chandra Shekhar,Vicky Süß,Marcus Schmidt,Claudia Felser,Binghai Yan,Kornelius Nielsch###
(1150293, 1150294)
 NbP is a recently realized Weyl semimetal (WSM), hosting Weyl points throughwhich conduction and valence bands cross linearly in the bulk and exotic Fermiarcs appear.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WS
###Chiral magnetoresistance in the Weyl semimetal NbP|Anna Corinna Niemann,Johannes Gooth,Shu-Chun Wu,Svenja Bäßler,Philip Sergelius,Ruben Hühne,Bernd Rellinghaus,Chandra Shekhar,Vicky Süß,Marcus Schmidt,Claudia Felser,Binghai Yan,Kornelius Nielsch###
(1150309, 1150310)
 NbP is a recently realized Weyl semimetal (WSM), hosting Weyl points throughwhich conduction and valence bands cross linearly in the bulk and exotic Fermiarcs appear.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WS
###Chiral magnetoresistance in the Weyl semimetal NbP|Anna Corinna Niemann,Johannes Gooth,Shu-Chun Wu,Svenja Bäßler,Philip Sergelius,Ruben Hühne,Bernd Rellinghaus,Chandra Shekhar,Vicky Süß,Marcus Schmidt,Claudia Felser,Binghai Yan,Kornelius Nielsch###
(1150373, 1150374)
 However, the most intriguing transport phenomenon of a WSM<missing VAR>, thechiral anomaly-induced negative magnetoresistance (NMR) in parallel electricand magnetic fields, has yet to be observed in NbP.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Chiral magnetoresistance in the Weyl semimetal NbP|Anna Corinna Niemann,Johannes Gooth,Shu-Chun Wu,Svenja Bäßler,Philip Sergelius,Ruben Hühne,Bernd Rellinghaus,Chandra Shekhar,Vicky Süß,Marcus Schmidt,Claudia Felser,Binghai Yan,Kornelius Nielsch###
(1150392, 1150392)
 However, the most intriguing transport phenomenon of a WSM<missing VAR>, thechiral anomaly-induced negative magnetoresistance (NMR) in parallel electricand magnetic fields, has yet to be observed in NbP.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbP
###Chiral magnetoresistance in the Weyl semimetal NbP|Anna Corinna Niemann,Johannes Gooth,Shu-Chun Wu,Svenja Bäßler,Philip Sergelius,Ruben Hühne,Bernd Rellinghaus,Chandra Shekhar,Vicky Süß,Marcus Schmidt,Claudia Felser,Binghai Yan,Kornelius Nielsch###
(1150423, 1150424)
 However, the most intriguing transport phenomenon of a WSM<missing VAR>, thechiral anomaly-induced negative magnetoresistance (NMR) in parallel electricand magnetic fields, has yet to be observed in NbP.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Chiral magnetoresistance in the Weyl semimetal NbP|Anna Corinna Niemann,Johannes Gooth,Shu-Chun Wu,Svenja Bäßler,Philip Sergelius,Ruben Hühne,Bernd Rellinghaus,Chandra Shekhar,Vicky Süß,Marcus Schmidt,Claudia Felser,Binghai Yan,Kornelius Nielsch###
(1150427, 1150427)
 In intrinsic NbP the Weylpoints lie far from the Fermi energy, making chiral magneto-transport elusive.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbP
###Chiral magnetoresistance in the Weyl semimetal NbP|Anna Corinna Niemann,Johannes Gooth,Shu-Chun Wu,Svenja Bäßler,Philip Sergelius,Ruben Hühne,Bernd Rellinghaus,Chandra Shekhar,Vicky Süß,Marcus Schmidt,Claudia Felser,Binghai Yan,Kornelius Nielsch###
(1150431, 1150432)
 In intrinsic NbP the Weylpoints lie far from the Fermi energy, making chiral magneto-transport elusive.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###Chiral magnetoresistance in the Weyl semimetal NbP|Anna Corinna Niemann,Johannes Gooth,Shu-Chun Wu,Svenja Bäßler,Philip Sergelius,Ruben Hühne,Bernd Rellinghaus,Chandra Shekhar,Vicky Süß,Marcus Schmidt,Claudia Felser,Binghai Yan,Kornelius Nielsch###
(1150473, 1150473)
Here, we use Ga-doping to relocate the Fermi energy in NbP sufficiently closeto the Weyl points, for which the different Fermi surfaces are verified byresultant quantum oscillations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbP
###Chiral magnetoresistance in the Weyl semimetal NbP|Anna Corinna Niemann,Johannes Gooth,Shu-Chun Wu,Svenja Bäßler,Philip Sergelius,Ruben Hühne,Bernd Rellinghaus,Chandra Shekhar,Vicky Süß,Marcus Schmidt,Claudia Felser,Binghai Yan,Kornelius Nielsch###
(1150489, 1150490)
Here, we use Ga-doping to relocate the Fermi energy in NbP sufficiently closeto the Weyl points, for which the different Fermi surfaces are verified byresultant quantum oscillations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Chiral magnetoresistance in the Weyl semimetal NbP|Anna Corinna Niemann,Johannes Gooth,Shu-Chun Wu,Svenja Bäßler,Philip Sergelius,Ruben Hühne,Bernd Rellinghaus,Chandra Shekhar,Vicky Süß,Marcus Schmidt,Claudia Felser,Binghai Yan,Kornelius Nielsch###
(1150541, 1150541)
 Consequently, we observe a NMR for parallelelectric and magnetic fields, which is considered as a signature of the chiralanomaly in condensed-matter physics.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Chiral magnetoresistance in the Weyl semimetal NbP|Anna Corinna Niemann,Johannes Gooth,Shu-Chun Wu,Svenja Bäßler,Philip Sergelius,Ruben Hühne,Bernd Rellinghaus,Chandra Shekhar,Vicky Süß,Marcus Schmidt,Claudia Felser,Binghai Yan,Kornelius Nielsch###
(1150591, 1150591)
 The NMR survives up to room temperature,making NbP a versatile material platform for the development of Weyltronicapplications.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbP
###Chiral magnetoresistance in the Weyl semimetal NbP|Anna Corinna Niemann,Johannes Gooth,Shu-Chun Wu,Svenja Bäßler,Philip Sergelius,Ruben Hühne,Bernd Rellinghaus,Chandra Shekhar,Vicky Süß,Marcus Schmidt,Claudia Felser,Binghai Yan,Kornelius Nielsch###
(1150609, 1150610)
 The NMR survives up to room temperature,making NbP a versatile material platform for the development of Weyltronicapplications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ca2RuO4
###Current-induced giant diamagnetism in the Mott insulator Ca2RuO4|Chanchal Sow,Shingo Yonezawa,Sota Kitamura,Takashi Oka,Kazuhiko Kuroki,Fumihiko Nakamura,Yoshiteru Maeno###
(1150658, 1150662)
Current-induced giant diamagnetism in the Mott insulator Ca2RuO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 1, 'A', 4]

Ca2RuO4
###Current-induced giant diamagnetism in the Mott insulator Ca2RuO4|Chanchal Sow,Shingo Yonezawa,Sota Kitamura,Takashi Oka,Kazuhiko Kuroki,Fumihiko Nakamura,Yoshiteru Maeno###
(1150786, 1150790)
 Here we report a novel phenomenon, namely giant diamagnetism, in theMott insulator Ca2RuO4 induced by electric current.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 1, 'A', 1]

Bi2Se3
###Evidence for topological proximity effect in graphene coupled to topological insulator|Liang Zhang,Ben-Chuan Lin,Yan-Fei Wu,Jun Xu,Dapeng Yu,Zhi-Min Liao###
(1151112, 1151115)
 Here we reportthe observations of the topological proximity effect in thegraphene-topological insulator Bi2Se3 heterojunctions via magnetotransportmeasurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, -91, '%', 1]

Bi2Se3
###Evidence for topological proximity effect in graphene coupled to topological insulator|Liang Zhang,Ben-Chuan Lin,Yan-Fei Wu,Jun Xu,Dapeng Yu,Zhi-Min Liao###
(1151163, 1151166)
 The coupling between the pz orbitals of graphene and the p<missing VAR>orbitals of surface states on the Bi2Se3 bottom surface can be enhanced byapplying perpendicular negative magnetic field, resulting in a giant negativemagnetoresistance at the Dirac point up to about -91%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, -91, '%', 0]

Bi2Se3
###Evidence for topological proximity effect in graphene coupled to topological insulator|Liang Zhang,Ben-Chuan Lin,Yan-Fei Wu,Jun Xu,Dapeng Yu,Zhi-Min Liao###
(1151302, 1151305)
 An obvious resistivitydip in the transfer curve at the Dirac point is also observed in the hybriddevices, which is consistent with the theoretical predictions of the distortedDirac bands with unique spin textures inherited from Bi2Se3 surface states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, -91, '%', 1]

LaTiO3/SrTiO3
###Signature of enhanced spin-orbit interaction in the magnetoresistance of LaTiO$_3$/SrTiO$_3$ interfaces on $δ$-doping|Shubhankar Das,Z. Hossain,R. C. Budhani###
(1151340, 1151348)
Signature of enhanced spin-orbit interaction in the magnetoresistance of LaTiO3/SrTiO3 interfaces on -doping.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

(SOI)
###Signature of enhanced spin-orbit interaction in the magnetoresistance of LaTiO$_3$/SrTiO$_3$ interfaces on $δ$-doping|Shubhankar Das,Z. Hossain,R. C. Budhani###
(1151378, 1151382)
 We present a study of modulation of spin-orbit interaction (SOI) at theinterface of LaTiO3/SrTiO3 by delta-doping with an iso-structuralferromagnetic perovskite LaCoO3.
Featurization successful!
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaTiO3/SrTiO3
###Signature of enhanced spin-orbit interaction in the magnetoresistance of LaTiO$_3$/SrTiO$_3$ interfaces on $δ$-doping|Shubhankar Das,Z. Hossain,R. C. Budhani###
(1151393, 1151401)
 We present a study of modulation of spin-orbit interaction (SOI) at theinterface of LaTiO3/SrTiO3 by delta-doping with an iso-structuralferromagnetic perovskite LaCoO3.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

LaCoO3
###Signature of enhanced spin-orbit interaction in the magnetoresistance of LaTiO$_3$/SrTiO$_3$ interfaces on $δ$-doping|Shubhankar Das,Z. Hossain,R. C. Budhani###
(1151422, 1151425)
 We present a study of modulation of spin-orbit interaction (SOI) at theinterface of LaTiO3/SrTiO3 by delta-doping with an iso-structuralferromagnetic perovskite LaCoO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SOI
###Signature of enhanced spin-orbit interaction in the magnetoresistance of LaTiO$_3$/SrTiO$_3$ interfaces on $δ$-doping|Shubhankar Das,Z. Hossain,R. C. Budhani###
(1151659, 1151661)
 The observed in-planeanisotropic magnetoresistance is attributed to the mixing of the spin up andspin down states of d<missing VAR>-band at Fermi level due to SOI.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Eu1-xGd
###Observation of semi-localized dispersive states in the strongly correlated electron-doped ferromagnet Eu$_{1-x}$Gd$_{x}$O|Daniel E. Shai,Mark H. Fischer,Alex J. Melville,Eric J. Monkman,John W. Harter,Dawei Shen,Darrell G. Schlom,Michael J. Lawler,Eun-Ah Kim,Kyle M. Shen###
(1151698, 1151702)
Observation of semi-localized dispersive states in the strongly correlated electron-doped ferromagnet Eu1-xGdx<missing VAR>O.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

O
###Observation of semi-localized dispersive states in the strongly correlated electron-doped ferromagnet Eu$_{1-x}$Gd$_{x}$O|Daniel E. Shai,Mark H. Fischer,Alex J. Melville,Eric J. Monkman,John W. Harter,Dawei Shen,Darrell G. Schlom,Michael J. Lawler,Eun-Ah Kim,Kyle M. Shen###
(1151704, 1151704)
Observation of semi-localized dispersive states in the strongly correlated electron-doped ferromagnet Eu1-xGdx<missing VAR>O.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuO
###Observation of semi-localized dispersive states in the strongly correlated electron-doped ferromagnet Eu$_{1-x}$Gd$_{x}$O|Daniel E. Shai,Mark H. Fischer,Alex J. Melville,Eric J. Monkman,John W. Harter,Dawei Shen,Darrell G. Schlom,Michael J. Lawler,Eun-Ah Kim,Kyle M. Shen###
(1151748, 1151749)
 For instance, in EuO, carrier dopingcan induce a spin-polarized metallic state, colossal magnetoresistance, andsignificantly enhance the Curie temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Eu1-xGd
###Observation of semi-localized dispersive states in the strongly correlated electron-doped ferromagnet Eu$_{1-x}$Gd$_{x}$O|Daniel E. Shai,Mark H. Fischer,Alex J. Melville,Eric J. Monkman,John W. Harter,Dawei Shen,Darrell G. Schlom,Michael J. Lawler,Eun-Ah Kim,Kyle M. Shen###
(1151859, 1151863)
 Here, we employ a combination ofmolecular-beam epitaxy, angle-resolved photoemission spectroscopy, and aneffective model calculation to investigate and understand how semi-localizedstates evolve in lightly electron doped Eu1-xGdx<missing VAR>O above theferromagnetic Curie temperature.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

O
###Observation of semi-localized dispersive states in the strongly correlated electron-doped ferromagnet Eu$_{1-x}$Gd$_{x}$O|Daniel E. Shai,Mark H. Fischer,Alex J. Melville,Eric J. Monkman,John W. Harter,Dawei Shen,Darrell G. Schlom,Michael J. Lawler,Eun-Ah Kim,Kyle M. Shen###
(1151865, 1151865)
 Here, we employ a combination ofmolecular-beam epitaxy, angle-resolved photoemission spectroscopy, and aneffective model calculation to investigate and understand how semi-localizedstates evolve in lightly electron doped Eu1-xGdx<missing VAR>O above theferromagnetic Curie temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuO
###Observation of semi-localized dispersive states in the strongly correlated electron-doped ferromagnet Eu$_{1-x}$Gd$_{x}$O|Daniel E. Shai,Mark H. Fischer,Alex J. Melville,Eric J. Monkman,John W. Harter,Dawei Shen,Darrell G. Schlom,Michael J. Lawler,Eun-Ah Kim,Kyle M. Shen###
(1151942, 1151943)
 Our studies reveal a characteristic lengthscale for the spatial extent of the donor wavefunctions which remains constantas a function of doping, consistent with recent tunneling studies of doped EuO.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Eu1-xGd
###Observation of semi-localized dispersive states in the strongly correlated electron-doped ferromagnet Eu$_{1-x}$Gd$_{x}$O|Daniel E. Shai,Mark H. Fischer,Alex J. Melville,Eric J. Monkman,John W. Harter,Dawei Shen,Darrell G. Schlom,Michael J. Lawler,Eun-Ah Kim,Kyle M. Shen###
(1151976, 1151980)
Our work sheds light on the nature of the semiconductor-to-metal transition inEu1-xGdx<missing VAR>O and should be generally applicable for doped complexoxides.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

O
###Observation of semi-localized dispersive states in the strongly correlated electron-doped ferromagnet Eu$_{1-x}$Gd$_{x}$O|Daniel E. Shai,Mark H. Fischer,Alex J. Melville,Eric J. Monkman,John W. Harter,Dawei Shen,Darrell G. Schlom,Michael J. Lawler,Eun-Ah Kim,Kyle M. Shen###
(1151982, 1151982)
Our work sheds light on the nature of the semiconductor-to-metal transition inEu1-xGdx<missing VAR>O and should be generally applicable for doped complexoxides.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt/NiO/YI
###Tunable sign change of spin Hall magnetoresistance in Pt/NiO/YIG structures|Dazhi Hou,Zhiyong Qiu,Joseph Barker,Koji Sato,Kei Yamamoto,Saul Velez,Juan M. Gomez-Perez,Luis E. Hueso,Felix Casanova,Eiji Saitoh###
(1152028, 1152034)
Tunable sign change of spin Hall magnetoresistance in Pt/NiO/YIG<missing VAR> structures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

S
###Tunable sign change of spin Hall magnetoresistance in Pt/NiO/YIG structures|Dazhi Hou,Zhiyong Qiu,Joseph Barker,Koji Sato,Kei Yamamoto,Saul Velez,Juan M. Gomez-Perez,Luis E. Hueso,Felix Casanova,Eiji Saitoh###
(1152047, 1152047)
 Spin Hall magnetoresistance (SMR) has been investigated in Pt/NiO/YIG<missing VAR>structures in a wide range of temperature and NiO thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt/NiO/YI
###Tunable sign change of spin Hall magnetoresistance in Pt/NiO/YIG structures|Dazhi Hou,Zhiyong Qiu,Joseph Barker,Koji Sato,Kei Yamamoto,Saul Velez,Juan M. Gomez-Perez,Luis E. Hueso,Felix Casanova,Eiji Saitoh###
(1152060, 1152066)
 Spin Hall magnetoresistance (SMR) has been investigated in Pt/NiO/YIG<missing VAR>structures in a wide range of temperature and NiO thickness.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

NiO
###Tunable sign change of spin Hall magnetoresistance in Pt/NiO/YIG structures|Dazhi Hou,Zhiyong Qiu,Joseph Barker,Koji Sato,Kei Yamamoto,Saul Velez,Juan M. Gomez-Perez,Luis E. Hueso,Felix Casanova,Eiji Saitoh###
(1152086, 1152087)
 Spin Hall magnetoresistance (SMR) has been investigated in Pt/NiO/YIG<missing VAR>structures in a wide range of temperature and NiO thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Tunable sign change of spin Hall magnetoresistance in Pt/NiO/YIG structures|Dazhi Hou,Zhiyong Qiu,Joseph Barker,Koji Sato,Kei Yamamoto,Saul Velez,Juan M. Gomez-Perez,Luis E. Hueso,Felix Casanova,Eiji Saitoh###
(1152094, 1152094)
 The SMR shows anegative sign below a temperature which increases with the NiO thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiO
###Tunable sign change of spin Hall magnetoresistance in Pt/NiO/YIG structures|Dazhi Hou,Zhiyong Qiu,Joseph Barker,Koji Sato,Kei Yamamoto,Saul Velez,Juan M. Gomez-Perez,Luis E. Hueso,Felix Casanova,Eiji Saitoh###
(1152121, 1152122)
 The SMR shows anegative sign below a temperature which increases with the NiO thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Tunable sign change of spin Hall magnetoresistance in Pt/NiO/YIG structures|Dazhi Hou,Zhiyong Qiu,Joseph Barker,Koji Sato,Kei Yamamoto,Saul Velez,Juan M. Gomez-Perez,Luis E. Hueso,Felix Casanova,Eiji Saitoh###
(1152140, 1152140)
 Thisis contrary to a conventional SMR theory picture applied to Pt/YIG<missing VAR> bilayerwhich always predicts a positive SMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt/YI
###Tunable sign change of spin Hall magnetoresistance in Pt/NiO/YIG structures|Dazhi Hou,Zhiyong Qiu,Joseph Barker,Koji Sato,Kei Yamamoto,Saul Velez,Juan M. Gomez-Perez,Luis E. Hueso,Felix Casanova,Eiji Saitoh###
(1152152, 1152155)
 Thisis contrary to a conventional SMR theory picture applied to Pt/YIG<missing VAR> bilayerwhich always predicts a positive SMR.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

S
###Tunable sign change of spin Hall magnetoresistance in Pt/NiO/YIG structures|Dazhi Hou,Zhiyong Qiu,Joseph Barker,Koji Sato,Kei Yamamoto,Saul Velez,Juan M. Gomez-Perez,Luis E. Hueso,Felix Casanova,Eiji Saitoh###
(1152171, 1152171)
 Thisis contrary to a conventional SMR theory picture applied to Pt/YIG<missing VAR> bilayerwhich always predicts a positive SMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Tunable sign change of spin Hall magnetoresistance in Pt/NiO/YIG structures|Dazhi Hou,Zhiyong Qiu,Joseph Barker,Koji Sato,Kei Yamamoto,Saul Velez,Juan M. Gomez-Perez,Luis E. Hueso,Felix Casanova,Eiji Saitoh###
(1152180, 1152180)
 The negative SMR is found to persist evenwhen NiO blocks the spin transmission between Pt and YIG<missing VAR>, indicating it isgoverned by the spin current response of NiO layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiO
###Tunable sign change of spin Hall magnetoresistance in Pt/NiO/YIG structures|Dazhi Hou,Zhiyong Qiu,Joseph Barker,Koji Sato,Kei Yamamoto,Saul Velez,Juan M. Gomez-Perez,Luis E. Hueso,Felix Casanova,Eiji Saitoh###
(1152197, 1152198)
 The negative SMR is found to persist evenwhen NiO blocks the spin transmission between Pt and YIG<missing VAR>, indicating it isgoverned by the spin current response of NiO layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Tunable sign change of spin Hall magnetoresistance in Pt/NiO/YIG structures|Dazhi Hou,Zhiyong Qiu,Joseph Barker,Koji Sato,Kei Yamamoto,Saul Velez,Juan M. Gomez-Perez,Luis E. Hueso,Felix Casanova,Eiji Saitoh###
(1152210, 1152210)
 The negative SMR is found to persist evenwhen NiO blocks the spin transmission between Pt and YIG<missing VAR>, indicating it isgoverned by the spin current response of NiO layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YI
###Tunable sign change of spin Hall magnetoresistance in Pt/NiO/YIG structures|Dazhi Hou,Zhiyong Qiu,Joseph Barker,Koji Sato,Kei Yamamoto,Saul Velez,Juan M. Gomez-Perez,Luis E. Hueso,Felix Casanova,Eiji Saitoh###
(1152214, 1152215)
 The negative SMR is found to persist evenwhen NiO blocks the spin transmission between Pt and YIG<missing VAR>, indicating it isgoverned by the spin current response of NiO layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiO
###Tunable sign change of spin Hall magnetoresistance in Pt/NiO/YIG structures|Dazhi Hou,Zhiyong Qiu,Joseph Barker,Koji Sato,Kei Yamamoto,Saul Velez,Juan M. Gomez-Perez,Luis E. Hueso,Felix Casanova,Eiji Saitoh###
(1152240, 1152241)
 The negative SMR is found to persist evenwhen NiO blocks the spin transmission between Pt and YIG<missing VAR>, indicating it isgoverned by the spin current response of NiO layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Tunable sign change of spin Hall magnetoresistance in Pt/NiO/YIG structures|Dazhi Hou,Zhiyong Qiu,Joseph Barker,Koji Sato,Kei Yamamoto,Saul Velez,Juan M. Gomez-Perez,Luis E. Hueso,Felix Casanova,Eiji Saitoh###
(1152254, 1152254)
 We explain the negative SMRby the NiO spin-flop coupled with YIG<missing VAR>, which can be overridden at highertemperatures by positive SMR contribution from YIG<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiO
###Tunable sign change of spin Hall magnetoresistance in Pt/NiO/YIG structures|Dazhi Hou,Zhiyong Qiu,Joseph Barker,Koji Sato,Kei Yamamoto,Saul Velez,Juan M. Gomez-Perez,Luis E. Hueso,Felix Casanova,Eiji Saitoh###
(1152263, 1152264)
 We explain the negative SMRby the NiO spin-flop coupled with YIG<missing VAR>, which can be overridden at highertemperatures by positive SMR contribution from YIG<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YI
###Tunable sign change of spin Hall magnetoresistance in Pt/NiO/YIG structures|Dazhi Hou,Zhiyong Qiu,Joseph Barker,Koji Sato,Kei Yamamoto,Saul Velez,Juan M. Gomez-Perez,Luis E. Hueso,Felix Casanova,Eiji Saitoh###
(1152274, 1152275)
 We explain the negative SMRby the NiO spin-flop coupled with YIG<missing VAR>, which can be overridden at highertemperatures by positive SMR contribution from YIG<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Tunable sign change of spin Hall magnetoresistance in Pt/NiO/YIG structures|Dazhi Hou,Zhiyong Qiu,Joseph Barker,Koji Sato,Kei Yamamoto,Saul Velez,Juan M. Gomez-Perez,Luis E. Hueso,Felix Casanova,Eiji Saitoh###
(1152298, 1152298)
 We explain the negative SMRby the NiO spin-flop coupled with YIG<missing VAR>, which can be overridden at highertemperatures by positive SMR contribution from YIG<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YI
###Tunable sign change of spin Hall magnetoresistance in Pt/NiO/YIG structures|Dazhi Hou,Zhiyong Qiu,Joseph Barker,Koji Sato,Kei Yamamoto,Saul Velez,Juan M. Gomez-Perez,Luis E. Hueso,Felix Casanova,Eiji Saitoh###
(1152306, 1152307)
 We explain the negative SMRby the NiO spin-flop coupled with YIG<missing VAR>, which can be overridden at highertemperatures by positive SMR contribution from YIG<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pb1-xSn
###A pressure-induced topological phase with large Berry curvature in Pb$_{1-x}$Sn$_x$Te|Tian Liang,Satya Kushwaha,Jinwoong Kim,Quinn Gibson,Jingjing Lin,Nicholas Kioussis,R. J. Cava,N. P. Ong###
(1152376, 1152380)
A pressure-induced topological phase with large Berry curvature in Pb1-xSnx<missing VAR>Te.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

Te
###A pressure-induced topological phase with large Berry curvature in Pb$_{1-x}$Sn$_x$Te|Tian Liang,Satya Kushwaha,Jinwoong Kim,Quinn Gibson,Jingjing Lin,Nicholas Kioussis,R. J. Cava,N. P. Ong###
(1152382, 1152382)
A pressure-induced topological phase with large Berry curvature in Pb1-xSnx<missing VAR>Te.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###A pressure-induced topological phase with large Berry curvature in Pb$_{1-x}$Sn$_x$Te|Tian Liang,Satya Kushwaha,Jinwoong Kim,Quinn Gibson,Jingjing Lin,Nicholas Kioussis,R. J. Cava,N. P. Ong###
(1152505, 1152505)
 pressure P) .
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pb1-xSn
###A pressure-induced topological phase with large Berry curvature in Pb$_{1-x}$Sn$_x$Te|Tian Liang,Satya Kushwaha,Jinwoong Kim,Quinn Gibson,Jingjing Lin,Nicholas Kioussis,R. J. Cava,N. P. Ong###
(1152540, 1152544)
 We report evidence that Pb1-xSnx<missing VAR>Teexhibits this topological metallic phase.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

Te
###A pressure-induced topological phase with large Berry curvature in Pb$_{1-x}$Sn$_x$Te|Tian Liang,Satya Kushwaha,Jinwoong Kim,Quinn Gibson,Jingjing Lin,Nicholas Kioussis,R. J. Cava,N. P. Ong###
(1152546, 1152546)
 We report evidence that Pb1-xSnx<missing VAR>Teexhibits this topological metallic phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###A pressure-induced topological phase with large Berry curvature in Pb$_{1-x}$Sn$_x$Te|Tian Liang,Satya Kushwaha,Jinwoong Kim,Quinn Gibson,Jingjing Lin,Nicholas Kioussis,R. J. Cava,N. P. Ong###
(1152607, 1152607)
 Using pressure to tune the gap, wehave tracked the nucleation of a Fermi surface droplet that rapidly grows involume with P.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###A pressure-induced topological phase with large Berry curvature in Pb$_{1-x}$Sn$_x$Te|Tian Liang,Satya Kushwaha,Jinwoong Kim,Quinn Gibson,Jingjing Lin,Nicholas Kioussis,R. J. Cava,N. P. Ong###
(1152610, 1152610)
 In the metallic state we observe a large Berry curvature whichdominates the Hall effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SmB6
###Reduction of the low-temperature bulk gap in samarium hexaboride under high magnetic fields|S. Wolgast,Y. S. Eo,K. Sun,Ç. Kurdak,F. F. Balakirev,M. Jaime,D. -J. Kim,Z. Fisk###
(1152757, 1152759)
 SmB6 exhibits a small (15-20 meV) bandgap at low temperatures due tohybridized d<missing VAR> and f<missing VAR> electrons, a tiny (3 meV) transport activation energy(E<missing VAR>A) above 4 K, and surface states accessible to transport below 2 K.
Featurization terminated normally.
0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 4, 'K', 0],[81.0, 2, 'K', 0],[104.0, 1.5, 'K', 1],[107.0, 4, 'K', 1],[171.0, 50, '%', 3],[181.0, 60, 'T', 3],[189.0, 93, 'T', 4],[203.0, 100, 'T', 4]

V
###Reduction of the low-temperature bulk gap in samarium hexaboride under high magnetic fields|S. Wolgast,Y. S. Eo,K. Sun,Ç. Kurdak,F. F. Balakirev,M. Jaime,D. -J. Kim,Z. Fisk###
(1152773, 1152773)
 SmB6 exhibits a small (15-20 meV) bandgap at low temperatures due tohybridized d<missing VAR> and f<missing VAR> electrons, a tiny (3 meV) transport activation energy(E<missing VAR>A) above 4 K, and surface states accessible to transport below 2 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 4, 'K', 0],[67.0, 2, 'K', 0],[90.0, 1.5, 'K', 1],[93.0, 4, 'K', 1],[157.0, 50, '%', 3],[167.0, 60, 'T', 3],[175.0, 93, 'T', 4],[189.0, 100, 'T', 4]

V
###Reduction of the low-temperature bulk gap in samarium hexaboride under high magnetic fields|S. Wolgast,Y. S. Eo,K. Sun,Ç. Kurdak,F. F. Balakirev,M. Jaime,D. -J. Kim,Z. Fisk###
(1152808, 1152808)
 SmB6 exhibits a small (15-20 meV) bandgap at low temperatures due tohybridized d<missing VAR> and f<missing VAR> electrons, a tiny (3 meV) transport activation energy(E<missing VAR>A) above 4 K, and surface states accessible to transport below 2 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 4, 'K', 0],[32.0, 2, 'K', 0],[55.0, 1.5, 'K', 1],[58.0, 4, 'K', 1],[122.0, 50, '%', 3],[132.0, 60, 'T', 3],[140.0, 93, 'T', 4],[154.0, 100, 'T', 4]

N
###Electric control of Dirac quasiparticles by spin-orbit torque in an antiferromagnet|Libor Šmejkal,Jakub Železný,Jairo Sinova,Tomáš Jungwirth###
(1153110, 1153110)
 Here we predict that Diracquasiparticles can be controlled by the spin-orbit torque reorientation of theNe<missing VAR>el vector in an antiferromagnet.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CuMnAs
###Electric control of Dirac quasiparticles by spin-orbit torque in an antiferromagnet|Libor Šmejkal,Jakub Železný,Jairo Sinova,Tomáš Jungwirth###
(1153125, 1153127)
 Using CuMnAs as an example, we formulatesymmetry criteria allowing for the co-existence of Dirac quasiparticles andNe<missing VAR>el spin-orbit torques.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Electric control of Dirac quasiparticles by spin-orbit torque in an antiferromagnet|Libor Šmejkal,Jakub Železný,Jairo Sinova,Tomáš Jungwirth###
(1153164, 1153164)
 Using CuMnAs as an example, we formulatesymmetry criteria allowing for the co-existence of Dirac quasiparticles andNe<missing VAR>el spin-orbit torques.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Electric control of Dirac quasiparticles by spin-orbit torque in an antiferromagnet|Libor Šmejkal,Jakub Železný,Jairo Sinova,Tomáš Jungwirth###
(1153219, 1153219)
 We identify the non-symmorphic crystal symmetryprotection of Dirac band crossings whose on and off switching is mediated bythe Ne<missing VAR>el vector reorientation.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CuMnAs
###Electric control of Dirac quasiparticles by spin-orbit torque in an antiferromagnet|Libor Šmejkal,Jakub Železný,Jairo Sinova,Tomáš Jungwirth###
(1153260, 1153262)
 We predict that this concept, verified byminimal model and density functional calculations in the CuMnAs semimetalantiferromagnet, can lead to a topological metal-insulator transition driven bythe Ne<missing VAR>el vector and to the corresponding topological anisotropicmagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Electric control of Dirac quasiparticles by spin-orbit torque in an antiferromagnet|Libor Šmejkal,Jakub Železný,Jairo Sinova,Tomáš Jungwirth###
(1153293, 1153293)
 We predict that this concept, verified byminimal model and density functional calculations in the CuMnAs semimetalantiferromagnet, can lead to a topological metal-insulator transition driven bythe Ne<missing VAR>el vector and to the corresponding topological anisotropicmagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Anomalous transport model with axial magnetic fields|Karl Landsteiner,Yan Liu###
(1153584, 1153584)
 As a side result weinterpret an anomalous contribution to the entropy current as a generalizedthermal Hall effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaBi
###Magnetic field induced strong valley polarization in the three dimensional topological semimetal LaBi|Nitesh Kumar,Chandra Shekhar,J. Klotz,J. Wosnitza,Claudia Felser###
(1153657, 1153658)
Magnetic field induced strong valley polarization in the three dimensional topological semimetal LaBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[183.0, 60, '%', 5],[187.0, 2, 'K', 5]

LaBi
###Magnetic field induced strong valley polarization in the three dimensional topological semimetal LaBi|Nitesh Kumar,Chandra Shekhar,J. Klotz,J. Wosnitza,Claudia Felser###
(1153661, 1153662)
 LaBi is a three-dimensional rocksalt-type material with a surprisinglyquasi-two-dimensional electronic structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 60, '%', 4],[183.0, 2, 'K', 4]

LaBi
###Magnetic field induced strong valley polarization in the three dimensional topological semimetal LaBi|Nitesh Kumar,Chandra Shekhar,J. Klotz,J. Wosnitza,Claudia Felser###
(1153873, 1153874)
 The valley polarization in LaBiis compared to the sister compound LaSb where it is found to be smaller.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 60, '%', 1],[28.0, 2, 'K', 1]

LaSb
###Magnetic field induced strong valley polarization in the three dimensional topological semimetal LaBi|Nitesh Kumar,Chandra Shekhar,J. Klotz,J. Wosnitza,Claudia Felser###
(1153889, 1153890)
 The valley polarization in LaBiis compared to the sister compound LaSb where it is found to be smaller.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 60, '%', 1],[44.0, 2, 'K', 1]

LaBi
###Magnetic field induced strong valley polarization in the three dimensional topological semimetal LaBi|Nitesh Kumar,Chandra Shekhar,J. Klotz,J. Wosnitza,Claudia Felser###
(1153914, 1153915)
 Theperformance of LaBi is comparable to the highly efficient bismuth.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 60, '%', 2],[69.0, 2, 'K', 2]

TaAs2
###Raman scattering study of large magnetoresistance semimetals TaAs$_2$ and NbAs$_2$|Feng Jin,Xiaoli Ma,Pengjie Guo,Changjiang Yi,Le Wang,Yiyan Wang,Qiaohe Yu,Jieming Sheng,Anmin Zhang,Jianting Ji,Yong Tian,Kai Liu,Youguo Shi,Tianlong Xia,Qingming Zhang###
(1153954, 1153956)
Raman scattering study of large magnetoresistance semimetals TaAs2 and NbAs2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbAs2
###Raman scattering study of large magnetoresistance semimetals TaAs$_2$ and NbAs$_2$|Feng Jin,Xiaoli Ma,Pengjie Guo,Changjiang Yi,Le Wang,Yiyan Wang,Qiaohe Yu,Jieming Sheng,Anmin Zhang,Jianting Ji,Yong Tian,Kai Liu,Youguo Shi,Tianlong Xia,Qingming Zhang###
(1153960, 1153962)
Raman scattering study of large magnetoresistance semimetals TaAs2 and NbAs2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TaAs2
###Raman scattering study of large magnetoresistance semimetals TaAs$_2$ and NbAs$_2$|Feng Jin,Xiaoli Ma,Pengjie Guo,Changjiang Yi,Le Wang,Yiyan Wang,Qiaohe Yu,Jieming Sheng,Anmin Zhang,Jianting Ji,Yong Tian,Kai Liu,Youguo Shi,Tianlong Xia,Qingming Zhang###
(1153996, 1153998)
 We have performed polarized and temperature-dependent Raman scatteringmeasurements on extremely large magnetoresitance compounds TaAs2 andNbAs2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbAs2
###Raman scattering study of large magnetoresistance semimetals TaAs$_2$ and NbAs$_2$|Feng Jin,Xiaoli Ma,Pengjie Guo,Changjiang Yi,Le Wang,Yiyan Wang,Qiaohe Yu,Jieming Sheng,Anmin Zhang,Jianting Ji,Yong Tian,Kai Liu,Youguo Shi,Tianlong Xia,Qingming Zhang###
(1154003, 1154005)
 We have performed polarized and temperature-dependent Raman scatteringmeasurements on extremely large magnetoresitance compounds TaAs2 andNbAs2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Raman scattering study of large magnetoresistance semimetals TaAs$_2$ and NbAs$_2$|Feng Jin,Xiaoli Ma,Pengjie Guo,Changjiang Yi,Le Wang,Yiyan Wang,Qiaohe Yu,Jieming Sheng,Anmin Zhang,Jianting Ji,Yong Tian,Kai Liu,Youguo Shi,Tianlong Xia,Qingming Zhang###
(1154008, 1154008)
 In both crystals, all the Raman active modes, including six Ag<missing VAR>modes and three Bg<missing VAR> modes, are clearly observed and well assigned with thecombination of symmetry analysis and first-principles calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Raman scattering study of large magnetoresistance semimetals TaAs$_2$ and NbAs$_2$|Feng Jin,Xiaoli Ma,Pengjie Guo,Changjiang Yi,Le Wang,Yiyan Wang,Qiaohe Yu,Jieming Sheng,Anmin Zhang,Jianting Ji,Yong Tian,Kai Liu,Youguo Shi,Tianlong Xia,Qingming Zhang###
(1154040, 1154040)
 In both crystals, all the Raman active modes, including six Ag<missing VAR>modes and three Bg<missing VAR> modes, are clearly observed and well assigned with thecombination of symmetry analysis and first-principles calculations.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TaAs2
###Raman scattering study of large magnetoresistance semimetals TaAs$_2$ and NbAs$_2$|Feng Jin,Xiaoli Ma,Pengjie Guo,Changjiang Yi,Le Wang,Yiyan Wang,Qiaohe Yu,Jieming Sheng,Anmin Zhang,Jianting Ji,Yong Tian,Kai Liu,Youguo Shi,Tianlong Xia,Qingming Zhang###
(1154214, 1154216)
The broadening of two Ag<missing VAR> modes seen in both compounds allows us to estimateelectron-phonon coupling constant, which suggests a relatively smallelectron-phonon coupling in the semimetals TaAs2 and NbAs2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbAs2
###Raman scattering study of large magnetoresistance semimetals TaAs$_2$ and NbAs$_2$|Feng Jin,Xiaoli Ma,Pengjie Guo,Changjiang Yi,Le Wang,Yiyan Wang,Qiaohe Yu,Jieming Sheng,Anmin Zhang,Jianting Ji,Yong Tian,Kai Liu,Youguo Shi,Tianlong Xia,Qingming Zhang###
(1154220, 1154222)
The broadening of two Ag<missing VAR> modes seen in both compounds allows us to estimateelectron-phonon coupling constant, which suggests a relatively smallelectron-phonon coupling in the semimetals TaAs2 and NbAs2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TaAs2
###Raman scattering study of large magnetoresistance semimetals TaAs$_2$ and NbAs$_2$|Feng Jin,Xiaoli Ma,Pengjie Guo,Changjiang Yi,Le Wang,Yiyan Wang,Qiaohe Yu,Jieming Sheng,Anmin Zhang,Jianting Ji,Yong Tian,Kai Liu,Youguo Shi,Tianlong Xia,Qingming Zhang###
(1154246, 1154248)
 The presentstudy provides the fundamental lattice dynamics information on TaAs2 andNbAs2 and may shed light on the understanding of their extraordinary largemagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbAs2
###Raman scattering study of large magnetoresistance semimetals TaAs$_2$ and NbAs$_2$|Feng Jin,Xiaoli Ma,Pengjie Guo,Changjiang Yi,Le Wang,Yiyan Wang,Qiaohe Yu,Jieming Sheng,Anmin Zhang,Jianting Ji,Yong Tian,Kai Liu,Youguo Shi,Tianlong Xia,Qingming Zhang###
(1154253, 1154255)
 The presentstudy provides the fundamental lattice dynamics information on TaAs2 andNbAs2 and may shed light on the understanding of their extraordinary largemagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Thickness dependent electronic structure in WTe$_2$ thin films|Fei-Xiang Xiang,Ashwin Srinivasan,Oleh Klochan,Shi-Xue Dou,Alex R. Hamilton,Xiao-Lin Wang###
(1154301, 1154303)
Thickness dependent electronic structure in WTe2 thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 11, 'nm', 1],[101.0, 26, 'nm', 2],[220.0, 3, 'D', 4],[223.0, 2, 'D', 4]

WTe2
###Thickness dependent electronic structure in WTe$_2$ thin films|Fei-Xiang Xiang,Ashwin Srinivasan,Oleh Klochan,Shi-Xue Dou,Alex R. Hamilton,Xiao-Lin Wang###
(1154322, 1154324)
 We study the electronic structure of WTe2 thin film fakes with differentthickness down to 11 nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 11, 'nm', 0],[80.0, 26, 'nm', 1],[199.0, 3, 'D', 3],[202.0, 2, 'D', 3]

In
###Thickness dependent electronic structure in WTe$_2$ thin films|Fei-Xiang Xiang,Ashwin Srinivasan,Oleh Klochan,Shi-Xue Dou,Alex R. Hamilton,Xiao-Lin Wang###
(1154497, 1154497)
 In addition, the quadratic magnetoresistance (MR) alsoshows a crossover from 3D to 2D behavior as the samples are made thinner, whilegating is shown to affect both the quadratic MR and the quantum oscillations ofa thin sample by tuning its carrier density.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 11, 'nm', 3],[93.0, 26, 'nm', 2],[26.0, 3, 'D', 0],[29.0, 2, 'D', 0]

WC
###Magnetotransport properties of the triply degenerate node topological semimetal tungsten carbide|J. B. He,D. Chen,W. L. Zhu,S. Zhang,L. X. Zhao,Z. A. Ren,G. F. Chen###
(1154679, 1154680)
 We report the magnetoresistance (MR), Hall effect, and de Haas-van Alphen(d<missing VAR>HvA) effect studies of the single crystals of tungsten carbide, WC, which ispredicted to be a new type of topological semimetal with triply degeneratenodes.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WC
###Magnetotransport properties of the triply degenerate node topological semimetal tungsten carbide|J. B. He,D. Chen,W. L. Zhu,S. Zhang,L. X. Zhao,Z. A. Ren,G. F. Chen###
(1154742, 1154743)
 With the magnetic field rotated in the plane perpendicular to thecurrent, WC shows field induced metal to insulator like transition and largenonsaturating quadratic MR at low temperature.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Magnetotransport properties of the triply degenerate node topological semimetal tungsten carbide|J. B. He,D. Chen,W. L. Zhu,S. Zhang,L. X. Zhao,Z. A. Ren,G. F. Chen###
(1154780, 1154780)
 As the magnetic field parallelto the current, a pronounced negative longitudinal MR only can be observed whenthe current flows along the certain direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WC
###Magnetotransport properties of the triply degenerate node topological semimetal tungsten carbide|J. B. He,D. Chen,W. L. Zhu,S. Zhang,L. X. Zhao,Z. A. Ren,G. F. Chen###
(1154841, 1154842)
 Hall effect indicates WC is aperfect compensated semimetal, which may be related to the large nonsaturatingquadratic MR.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WC
###Magnetotransport properties of the triply degenerate node topological semimetal tungsten carbide|J. B. He,D. Chen,W. L. Zhu,S. Zhang,L. X. Zhao,Z. A. Ren,G. F. Chen###
(1154895, 1154896)
 The analysis of d<missing VAR>HvA oscillations reveals that WC is a multibandsystem with small cross-sectional areas of Fermi surface and light cyclotroneffective masses.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WC
###Magnetotransport properties of the triply degenerate node topological semimetal tungsten carbide|J. B. He,D. Chen,W. L. Zhu,S. Zhang,L. X. Zhao,Z. A. Ren,G. F. Chen###
(1154943, 1154944)
 Our results indicate that WC is an ideal platform to studythe recently proposed New Fermions with triply degenerate crossing points.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoP
###Extremely high conductivity observed in the triple point topological metal MoP|Nitesh Kumar,Yan Sun,Michael Nicklas,Sarah J. Watzman,Olga Young,Inge Leermakers,Jacob Hornung,Johannes Klotz,Johannes Gooth,Kaustuv Manna,Vicky Süß,Satya N. Guin,Tobias Förster,Marcus Schmidt,Lukas Muechler,Binghai Yan,Peter Werner,Walter Schnelle,Uli Zeitler,Jochen Wosnitza,Stuart S. P. Parkin,Claudia Felser,Chandra Shekhar###
(1155008, 1155009)
Extremely high conductivity observed in the triple point topological metal MoP.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 6, 'n', 4],[133.0, 2, 'K', 4],[148.0, 11, 'microns', 4],[222.0, 9, 'T', 6],[225.0, 2, 'K', 6],[257.0, 15, 'times', 7]

MoP
###Extremely high conductivity observed in the triple point topological metal MoP|Nitesh Kumar,Yan Sun,Michael Nicklas,Sarah J. Watzman,Olga Young,Inge Leermakers,Jacob Hornung,Johannes Klotz,Johannes Gooth,Kaustuv Manna,Vicky Süß,Satya N. Guin,Tobias Förster,Marcus Schmidt,Lukas Muechler,Binghai Yan,Peter Werner,Walter Schnelle,Uli Zeitler,Jochen Wosnitza,Stuart S. P. Parkin,Claudia Felser,Chandra Shekhar###
(1155085, 1155086)
 Here, we report ultra-high electricalconductivity in MoP at low temperature, which has recently been established asa triple point Fermion material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 6, 'n', 1],[56.0, 2, 'K', 1],[71.0, 11, 'microns', 1],[145.0, 9, 'T', 3],[148.0, 2, 'K', 3],[180.0, 15, 'times', 4]

In
###Extremely high conductivity observed in the triple point topological metal MoP|Nitesh Kumar,Yan Sun,Michael Nicklas,Sarah J. Watzman,Olga Young,Inge Leermakers,Jacob Hornung,Johannes Klotz,Johannes Gooth,Kaustuv Manna,Vicky Süß,Satya N. Guin,Tobias Förster,Marcus Schmidt,Lukas Muechler,Binghai Yan,Peter Werner,Walter Schnelle,Uli Zeitler,Jochen Wosnitza,Stuart S. P. Parkin,Claudia Felser,Chandra Shekhar###
(1155186, 1155186)
 In contrast tonoble metals with similar conductivity and number of carriers, themagnetoresistance in MoP does not saturate up to 9 T at 2 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 6, 'n', 2],[44.0, 2, 'K', 2],[29.0, 11, 'microns', 2],[45.0, 9, 'T', 0],[48.0, 2, 'K', 0],[80.0, 15, 'times', 1]

MoP
###Extremely high conductivity observed in the triple point topological metal MoP|Nitesh Kumar,Yan Sun,Michael Nicklas,Sarah J. Watzman,Olga Young,Inge Leermakers,Jacob Hornung,Johannes Klotz,Johannes Gooth,Kaustuv Manna,Vicky Süß,Satya N. Guin,Tobias Förster,Marcus Schmidt,Lukas Muechler,Binghai Yan,Peter Werner,Walter Schnelle,Uli Zeitler,Jochen Wosnitza,Stuart S. P. Parkin,Claudia Felser,Chandra Shekhar###
(1155219, 1155220)
 In contrast tonoble metals with similar conductivity and number of carriers, themagnetoresistance in MoP does not saturate up to 9 T at 2 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 6, 'n', 2],[77.0, 2, 'K', 2],[62.0, 11, 'microns', 2],[11.0, 9, 'T', 0],[14.0, 2, 'K', 0],[46.0, 15, 'times', 1]

MoP
###Extremely high conductivity observed in the triple point topological metal MoP|Nitesh Kumar,Yan Sun,Michael Nicklas,Sarah J. Watzman,Olga Young,Inge Leermakers,Jacob Hornung,Johannes Klotz,Johannes Gooth,Kaustuv Manna,Vicky Süß,Satya N. Guin,Tobias Förster,Marcus Schmidt,Lukas Muechler,Binghai Yan,Peter Werner,Walter Schnelle,Uli Zeitler,Jochen Wosnitza,Stuart S. P. Parkin,Claudia Felser,Chandra Shekhar###
(1155309, 1155310)
 This difference between the scatteringscales shows that momentum conserving scattering dominates in MoP at lowtemperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[174.0, 6, 'n', 4],[167.0, 2, 'K', 4],[152.0, 11, 'microns', 4],[78.0, 9, 'T', 2],[75.0, 2, 'K', 2],[43.0, 15, 'times', 1]

In
###Dynamical amplification of magnetoresistances and Hall currents up to the THz regime|Filipe S. M. Guimarães,Manuel dos Santos Dias,Juba Bouaziz,Antonio T. Costa,Roberto B. Muniz,Samir Lounis###
(1155450, 1155450)
 In this work, we considerCo/Pt and Fe/W bilayers to show that accounting for the phase differencebetween different processes is crucial to the correct description of thedynamical currents.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 500, '%', 1]

Co/Pt
###Dynamical amplification of magnetoresistances and Hall currents up to the THz regime|Filipe S. M. Guimarães,Manuel dos Santos Dias,Juba Bouaziz,Antonio T. Costa,Roberto B. Muniz,Samir Lounis###
(1155462, 1155464)
 In this work, we considerCo/Pt and Fe/W bilayers to show that accounting for the phase differencebetween different processes is crucial to the correct description of thedynamical currents.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[108.0, 500, '%', 1]

Fe/W
###Dynamical amplification of magnetoresistances and Hall currents up to the THz regime|Filipe S. M. Guimarães,Manuel dos Santos Dias,Juba Bouaziz,Antonio T. Costa,Roberto B. Muniz,Samir Lounis###
(1155468, 1155470)
 In this work, we considerCo/Pt and Fe/W bilayers to show that accounting for the phase differencebetween different processes is crucial to the correct description of thedynamical currents.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[102.0, 500, '%', 1]

In
###Theory of anomalous magnetotransport from mass anisotropy|Liujun Zou,Samuel Lederer,T. Senthil###
(1155684, 1155684)
 In underdoped YBa2Cu3O6x<missing VAR>, there is evidence of a small Fermisurface pocket subject to substantial mass enhancement in the doping regime 0.12<p<missing VAR><0.16.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 0.12, '<', 0]

YBa2Cu3O6
###Theory of anomalous magnetotransport from mass anisotropy|Liujun Zou,Samuel Lederer,T. Senthil###
(1155688, 1155694)
 In underdoped YBa2Cu3O6x<missing VAR>, there is evidence of a small Fermisurface pocket subject to substantial mass enhancement in the doping regime 0.12<p<missing VAR><0.16.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 0.12, '<', 0]

In
###Theory of anomalous magnetotransport from mass anisotropy|Liujun Zou,Samuel Lederer,T. Senthil###
(1155937, 1155937)
 In addition we identify a novelintermediate asymptotic regime of magnetic field, characterized by B-linearmagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[200.0, 0.12, '<', 5]

B
###Theory of anomalous magnetotransport from mass anisotropy|Liujun Zou,Samuel Lederer,T. Senthil###
(1155967, 1155967)
 In addition we identify a novelintermediate asymptotic regime of magnetic field, characterized by B-linearmagnetoresistance.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[230.0, 0.12, '<', 5]

In
###Room temperature magneto-optic effect in silicon light-emitting diodes|F. Chiodi,S. L. Bayliss,L. Barast,D. Débarre,H. Bouchiat,R. H. Friend,A. D. Chepelianskii###
(1156035, 1156035)
 In weakly spin-orbit coupled materials, the spin-selective nature ofrecombination can give rise to large magnetic-field effects, for example onelectro-luminescence from molecular semiconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[266.0, 300, '%', 4]

Ds
###Room temperature magneto-optic effect in silicon light-emitting diodes|F. Chiodi,S. L. Bayliss,L. Barast,D. Débarre,H. Bouchiat,R. H. Friend,A. D. Chepelianskii###
(1156366, 1156366)
 We findthat electroluminescence can be enhanced by up to 300% near room temperaturein a seven Tesla magnetic field showing that the control of the spin degree offreedom can have a strong impact on the efficiency of silicon LEDs.
EXCEPTION 3: IndexError for Ds
[65.0, 300, '%', 0]

Ba0.5K0.5Fe2As2
###Nematic superconducting state in iron pnictide superconductors|Jun Li,Paulo J. Pereira,Jie Yuan,Yang-Yang Lv,Mei-Ping Jiang,Dachuan Lu,Zi-Quan Lin,Yong-Jie Liu,Jun-Feng Wang,Liang Li,Xiaoxing Ke,Gustaaf Van Tendeloo,Meng-Yue Li,Hai-Luke Feng,Takeshi Hatano,Hua-Bing Wang,Pei-Heng Wu,Kazunari Yamaura,Eiji Takayama-Muromachi,Johan Vanacken,Liviu F. Chibotaru,Victor V. Moshchalkov###
(1156498, 1156505)
 Here, we report the observation of a nematicsuperconducting state, by measuring the angular dependence of the in-plane andout-of-plane magnetoresistivity of Ba0.5K0.5Fe2As2 single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr2FeMoO6
###Magnetic and Electronic Properties of Spin-Orbit Coupled Dirac Electrons on a $(001)$ Thin Film of Double Perovskite Sr$_2$FeMoO$_6$|Masahiko G. Yamada,George Jackeli###
(1156758, 1156763)
Magnetic and Electronic Properties of Spin-Orbit Coupled Dirac Electrons on a (001) Thin Film of Double Perovskite Sr2FeMoO6.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr2FeMoO6
###Magnetic and Electronic Properties of Spin-Orbit Coupled Dirac Electrons on a $(001)$ Thin Film of Double Perovskite Sr$_2$FeMoO$_6$|Masahiko G. Yamada,George Jackeli###
(1156805, 1156810)
 We present an interacting model for the electronic and magnetic behavior of astrained (001) atomic layer of Sr2FeMoO6, which shows room-temperatureferrimagnetism and magnetoresistance with potential spintronics application inthe bulk.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr2-xLa
###Magnetic and Electronic Properties of Spin-Orbit Coupled Dirac Electrons on a $(001)$ Thin Film of Double Perovskite Sr$_2$FeMoO$_6$|Masahiko G. Yamada,George Jackeli###
(1157003, 1157007)
 Based on the spin-wave theory, we demonstratethat the magnetic order remains intact for a wide range of doping, leading tothe possibility of exploring flat band physics, such as Wigner crystallizationin electron-doped Sr2-xLax<missing VAR>FeMoO6.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

FeMoO6
###Magnetic and Electronic Properties of Spin-Orbit Coupled Dirac Electrons on a $(001)$ Thin Film of Double Perovskite Sr$_2$FeMoO$_6$|Masahiko G. Yamada,George Jackeli###
(1157009, 1157012)
 Based on the spin-wave theory, we demonstratethat the magnetic order remains intact for a wide range of doping, leading tothe possibility of exploring flat band physics, such as Wigner crystallizationin electron-doped Sr2-xLax<missing VAR>FeMoO6.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaBi
###Experimental observation of node-line-like surface states in LaBi|Baojie Feng,Jin Cao,Meng Yang,Ya Feng,Shilong Wu,Botao Fu,Masashi Arita,Koji Miyamoto,Shaolong He,Kenya Shimada,Youguo Shi,Taichi Okuda,Yugui Yao###
(1157041, 1157042)
Experimental observation of node-line-like surface states in LaBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Experimental observation of node-line-like surface states in LaBi|Baojie Feng,Jin Cao,Meng Yang,Ya Feng,Shilong Wu,Botao Fu,Masashi Arita,Koji Miyamoto,Shaolong He,Kenya Shimada,Youguo Shi,Taichi Okuda,Yugui Yao###
(1157045, 1157045)
 In a Dirac nodal line semimetal, the bulk conduction and valence bands touchat extended lines in the Brillouin zone.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaBi
###Experimental observation of node-line-like surface states in LaBi|Baojie Feng,Jin Cao,Meng Yang,Ya Feng,Shilong Wu,Botao Fu,Masashi Arita,Koji Miyamoto,Shaolong He,Kenya Shimada,Youguo Shi,Taichi Okuda,Yugui Yao###
(1157202, 1157203)
 Here, based on combined angle-resolvedphotoemission spectroscopy measurements and first-principles calculations, wereport the discovery of node-line-like surface states on the (001) surface ofLaBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaBi
###Experimental observation of node-line-like surface states in LaBi|Baojie Feng,Jin Cao,Meng Yang,Ya Feng,Shilong Wu,Botao Fu,Masashi Arita,Koji Miyamoto,Shaolong He,Kenya Shimada,Youguo Shi,Taichi Okuda,Yugui Yao###
(1157224, 1157225)
 These bands derive from the topological surface states of LaBi and bridgethe band gap opened by spin-orbit coupling and band inversion.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaBi
###Experimental observation of node-line-like surface states in LaBi|Baojie Feng,Jin Cao,Meng Yang,Ya Feng,Shilong Wu,Botao Fu,Masashi Arita,Koji Miyamoto,Shaolong He,Kenya Shimada,Youguo Shi,Taichi Okuda,Yugui Yao###
(1157325, 1157326)
 These results may provideimportant information to understand the extraordinary physical properties ofLaBi, such as the extremely large magnetoresistance and resistivity plateau.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###A Novel Effect of Electron Spin Resonance on Electrical Resistivity|Navinder Singh,Luxmi Rani###
(1157447, 1157447)
 We extend the well known phenomenon of magnetoresistance (extra resistivityof materials in transverse magnetic field) to a new and unexplored regime wherein addition to a transverse magnetic field, a transverse AC field of resonantfrequency is also applied.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###A Novel Effect of Electron Spin Resonance on Electrical Resistivity|Navinder Singh,Luxmi Rani###
(1157465, 1157465)
 In a magnetic field, electron spin levels are Zeemansplit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###A Novel Effect of Electron Spin Resonance on Electrical Resistivity|Navinder Singh,Luxmi Rani###
(1157488, 1157488)
 In a resonant AC field, we uncover a new channel of momentum relaxationin which electrons in upper Zeeman level can deexcite to lower Zeeman level bygenerating spin fluctuation excitation in the lattice (similar to what happensin Electron Spin Resonance (ESR) spectroscopy).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###A Novel Effect of Electron Spin Resonance on Electrical Resistivity|Navinder Singh,Luxmi Rani###
(1157495, 1157495)
 In a resonant AC field, we uncover a new channel of momentum relaxationin which electrons in upper Zeeman level can deexcite to lower Zeeman level bygenerating spin fluctuation excitation in the lattice (similar to what happensin Electron Spin Resonance (ESR) spectroscopy).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFeB/MgO
###Shape anisotropy revisited in single-digit nanometer magnetic tunnel junctions|K. Watanabe,B. Jinnai,S. Fukami,H. Sato,H. Ohno###
(1157835, 1157840)
 Perpendicular-easy-axis CoFeB/MgO stacks possessinginterfacial anisotropy have paved the way down to 20-nm scale, below which anew approach needs to be explored.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[151.0, 10, 'nm', 2]

S
###High throughput screening for spin-gapless semiconductors in quaternary Heusler compounds|Qiang Gao,Ingo Opahle,Hongbin Zhang###
(1158134, 1158134)
 Based on high throughput density functional theory calculations, we performedsystematic screening for spin-gapless semiconductors (SG<missing VAR>Ss) in quaternaryHeusler alloys XX 0 YZ (X<missing VAR>, X<missing VAR> 0 , and Y are transition metal elements withoutTc, and Z<missing VAR> is one of B, Al, Ga, In, Si, Ge, Sn, Pb, P, As, Sb, and Bi).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 0, 'YZ', 0],[115.0, 21, ',', 1],[118.0, 26, ',', 1],[135.0, 12, ',', 1],[137.0, 0, 'possible', 1],[172.0, 70, 'stable', 2]

Y
###High throughput screening for spin-gapless semiconductors in quaternary Heusler compounds|Qiang Gao,Ingo Opahle,Hongbin Zhang###
(1158164, 1158164)
 Based on high throughput density functional theory calculations, we performedsystematic screening for spin-gapless semiconductors (SG<missing VAR>Ss) in quaternaryHeusler alloys XX 0 YZ (X<missing VAR>, X<missing VAR> 0 , and Y are transition metal elements withoutTc, and Z<missing VAR> is one of B, Al, Ga, In, Si, Ge, Sn, Pb, P, As, Sb, and Bi).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 0, 'YZ', 0],[85.0, 21, ',', 1],[88.0, 26, ',', 1],[105.0, 12, ',', 1],[107.0, 0, 'possible', 1],[142.0, 70, 'stable', 2]

Tc
###High throughput screening for spin-gapless semiconductors in quaternary Heusler compounds|Qiang Gao,Ingo Opahle,Hongbin Zhang###
(1158177, 1158177)
 Based on high throughput density functional theory calculations, we performedsystematic screening for spin-gapless semiconductors (SG<missing VAR>Ss) in quaternaryHeusler alloys XX 0 YZ (X<missing VAR>, X<missing VAR> 0 , and Y are transition metal elements withoutTc, and Z<missing VAR> is one of B, Al, Ga, In, Si, Ge, Sn, Pb, P, As, Sb, and Bi).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 0, 'YZ', 0],[72.0, 21, ',', 1],[75.0, 26, ',', 1],[92.0, 12, ',', 1],[94.0, 0, 'possible', 1],[129.0, 70, 'stable', 2]

B
###High throughput screening for spin-gapless semiconductors in quaternary Heusler compounds|Qiang Gao,Ingo Opahle,Hongbin Zhang###
(1158190, 1158190)
 Based on high throughput density functional theory calculations, we performedsystematic screening for spin-gapless semiconductors (SG<missing VAR>Ss) in quaternaryHeusler alloys XX 0 YZ (X<missing VAR>, X<missing VAR> 0 , and Y are transition metal elements withoutTc, and Z<missing VAR> is one of B, Al, Ga, In, Si, Ge, Sn, Pb, P, As, Sb, and Bi).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 0, 'YZ', 0],[59.0, 21, ',', 1],[62.0, 26, ',', 1],[79.0, 12, ',', 1],[81.0, 0, 'possible', 1],[116.0, 70, 'stable', 2]

Al
###High throughput screening for spin-gapless semiconductors in quaternary Heusler compounds|Qiang Gao,Ingo Opahle,Hongbin Zhang###
(1158193, 1158193)
 Based on high throughput density functional theory calculations, we performedsystematic screening for spin-gapless semiconductors (SG<missing VAR>Ss) in quaternaryHeusler alloys XX 0 YZ (X<missing VAR>, X<missing VAR> 0 , and Y are transition metal elements withoutTc, and Z<missing VAR> is one of B, Al, Ga, In, Si, Ge, Sn, Pb, P, As, Sb, and Bi).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 0, 'YZ', 0],[56.0, 21, ',', 1],[59.0, 26, ',', 1],[76.0, 12, ',', 1],[78.0, 0, 'possible', 1],[113.0, 70, 'stable', 2]

Ga
###High throughput screening for spin-gapless semiconductors in quaternary Heusler compounds|Qiang Gao,Ingo Opahle,Hongbin Zhang###
(1158196, 1158196)
 Based on high throughput density functional theory calculations, we performedsystematic screening for spin-gapless semiconductors (SG<missing VAR>Ss) in quaternaryHeusler alloys XX 0 YZ (X<missing VAR>, X<missing VAR> 0 , and Y are transition metal elements withoutTc, and Z<missing VAR> is one of B, Al, Ga, In, Si, Ge, Sn, Pb, P, As, Sb, and Bi).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 0, 'YZ', 0],[53.0, 21, ',', 1],[56.0, 26, ',', 1],[73.0, 12, ',', 1],[75.0, 0, 'possible', 1],[110.0, 70, 'stable', 2]

In
###High throughput screening for spin-gapless semiconductors in quaternary Heusler compounds|Qiang Gao,Ingo Opahle,Hongbin Zhang###
(1158199, 1158199)
 Based on high throughput density functional theory calculations, we performedsystematic screening for spin-gapless semiconductors (SG<missing VAR>Ss) in quaternaryHeusler alloys XX 0 YZ (X<missing VAR>, X<missing VAR> 0 , and Y are transition metal elements withoutTc, and Z<missing VAR> is one of B, Al, Ga, In, Si, Ge, Sn, Pb, P, As, Sb, and Bi).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 0, 'YZ', 0],[50.0, 21, ',', 1],[53.0, 26, ',', 1],[70.0, 12, ',', 1],[72.0, 0, 'possible', 1],[107.0, 70, 'stable', 2]

Si
###High throughput screening for spin-gapless semiconductors in quaternary Heusler compounds|Qiang Gao,Ingo Opahle,Hongbin Zhang###
(1158202, 1158202)
 Based on high throughput density functional theory calculations, we performedsystematic screening for spin-gapless semiconductors (SG<missing VAR>Ss) in quaternaryHeusler alloys XX 0 YZ (X<missing VAR>, X<missing VAR> 0 , and Y are transition metal elements withoutTc, and Z<missing VAR> is one of B, Al, Ga, In, Si, Ge, Sn, Pb, P, As, Sb, and Bi).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 0, 'YZ', 0],[47.0, 21, ',', 1],[50.0, 26, ',', 1],[67.0, 12, ',', 1],[69.0, 0, 'possible', 1],[104.0, 70, 'stable', 2]

Ge
###High throughput screening for spin-gapless semiconductors in quaternary Heusler compounds|Qiang Gao,Ingo Opahle,Hongbin Zhang###
(1158205, 1158205)
 Based on high throughput density functional theory calculations, we performedsystematic screening for spin-gapless semiconductors (SG<missing VAR>Ss) in quaternaryHeusler alloys XX 0 YZ (X<missing VAR>, X<missing VAR> 0 , and Y are transition metal elements withoutTc, and Z<missing VAR> is one of B, Al, Ga, In, Si, Ge, Sn, Pb, P, As, Sb, and Bi).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 0, 'YZ', 0],[44.0, 21, ',', 1],[47.0, 26, ',', 1],[64.0, 12, ',', 1],[66.0, 0, 'possible', 1],[101.0, 70, 'stable', 2]

Sn
###High throughput screening for spin-gapless semiconductors in quaternary Heusler compounds|Qiang Gao,Ingo Opahle,Hongbin Zhang###
(1158208, 1158208)
 Based on high throughput density functional theory calculations, we performedsystematic screening for spin-gapless semiconductors (SG<missing VAR>Ss) in quaternaryHeusler alloys XX 0 YZ (X<missing VAR>, X<missing VAR> 0 , and Y are transition metal elements withoutTc, and Z<missing VAR> is one of B, Al, Ga, In, Si, Ge, Sn, Pb, P, As, Sb, and Bi).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 0, 'YZ', 0],[41.0, 21, ',', 1],[44.0, 26, ',', 1],[61.0, 12, ',', 1],[63.0, 0, 'possible', 1],[98.0, 70, 'stable', 2]

Pb
###High throughput screening for spin-gapless semiconductors in quaternary Heusler compounds|Qiang Gao,Ingo Opahle,Hongbin Zhang###
(1158211, 1158211)
 Based on high throughput density functional theory calculations, we performedsystematic screening for spin-gapless semiconductors (SG<missing VAR>Ss) in quaternaryHeusler alloys XX 0 YZ (X<missing VAR>, X<missing VAR> 0 , and Y are transition metal elements withoutTc, and Z<missing VAR> is one of B, Al, Ga, In, Si, Ge, Sn, Pb, P, As, Sb, and Bi).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 0, 'YZ', 0],[38.0, 21, ',', 1],[41.0, 26, ',', 1],[58.0, 12, ',', 1],[60.0, 0, 'possible', 1],[95.0, 70, 'stable', 2]

P
###High throughput screening for spin-gapless semiconductors in quaternary Heusler compounds|Qiang Gao,Ingo Opahle,Hongbin Zhang###
(1158214, 1158214)
 Based on high throughput density functional theory calculations, we performedsystematic screening for spin-gapless semiconductors (SG<missing VAR>Ss) in quaternaryHeusler alloys XX 0 YZ (X<missing VAR>, X<missing VAR> 0 , and Y are transition metal elements withoutTc, and Z<missing VAR> is one of B, Al, Ga, In, Si, Ge, Sn, Pb, P, As, Sb, and Bi).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 0, 'YZ', 0],[35.0, 21, ',', 1],[38.0, 26, ',', 1],[55.0, 12, ',', 1],[57.0, 0, 'possible', 1],[92.0, 70, 'stable', 2]

As
###High throughput screening for spin-gapless semiconductors in quaternary Heusler compounds|Qiang Gao,Ingo Opahle,Hongbin Zhang###
(1158217, 1158217)
 Based on high throughput density functional theory calculations, we performedsystematic screening for spin-gapless semiconductors (SG<missing VAR>Ss) in quaternaryHeusler alloys XX 0 YZ (X<missing VAR>, X<missing VAR> 0 , and Y are transition metal elements withoutTc, and Z<missing VAR> is one of B, Al, Ga, In, Si, Ge, Sn, Pb, P, As, Sb, and Bi).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 0, 'YZ', 0],[32.0, 21, ',', 1],[35.0, 26, ',', 1],[52.0, 12, ',', 1],[54.0, 0, 'possible', 1],[89.0, 70, 'stable', 2]

Sb
###High throughput screening for spin-gapless semiconductors in quaternary Heusler compounds|Qiang Gao,Ingo Opahle,Hongbin Zhang###
(1158220, 1158220)
 Based on high throughput density functional theory calculations, we performedsystematic screening for spin-gapless semiconductors (SG<missing VAR>Ss) in quaternaryHeusler alloys XX 0 YZ (X<missing VAR>, X<missing VAR> 0 , and Y are transition metal elements withoutTc, and Z<missing VAR> is one of B, Al, Ga, In, Si, Ge, Sn, Pb, P, As, Sb, and Bi).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 0, 'YZ', 0],[29.0, 21, ',', 1],[32.0, 26, ',', 1],[49.0, 12, ',', 1],[51.0, 0, 'possible', 1],[86.0, 70, 'stable', 2]

Bi
###High throughput screening for spin-gapless semiconductors in quaternary Heusler compounds|Qiang Gao,Ingo Opahle,Hongbin Zhang###
(1158225, 1158225)
 Based on high throughput density functional theory calculations, we performedsystematic screening for spin-gapless semiconductors (SG<missing VAR>Ss) in quaternaryHeusler alloys XX 0 YZ (X<missing VAR>, X<missing VAR> 0 , and Y are transition metal elements withoutTc, and Z<missing VAR> is one of B, Al, Ga, In, Si, Ge, Sn, Pb, P, As, Sb, and Bi).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 0, 'YZ', 0],[24.0, 21, ',', 1],[27.0, 26, ',', 1],[44.0, 12, ',', 1],[46.0, 0, 'possible', 1],[81.0, 70, 'stable', 2]

S
###High throughput screening for spin-gapless semiconductors in quaternary Heusler compounds|Qiang Gao,Ingo Opahle,Hongbin Zhang###
(1158308, 1158308)
 Aftersystematically evaluating the thermodynamic, mechanical, and dynamicalstabilities, we successfully identified 70 stable SG<missing VAR>Ss, confirmed by explicitelectronic structure calculations with proper magnetic ground states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 0, 'YZ', 2],[59.0, 21, ',', 1],[56.0, 26, ',', 1],[39.0, 12, ',', 1],[37.0, 0, 'possible', 1],[2.0, 70, 'stable', 0]

S
###High throughput screening for spin-gapless semiconductors in quaternary Heusler compounds|Qiang Gao,Ingo Opahle,Hongbin Zhang###
(1158354, 1158354)
 It isdemonstrated that all four types of SG<missing VAR>Ss can be realized, defined based on thespin characters of the bands around the Fermi energy, and the type-II SG<missing VAR>Ss showpromising transport properties for spintronic applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[204.0, 0, 'YZ', 3],[105.0, 21, ',', 2],[102.0, 26, ',', 2],[85.0, 12, ',', 2],[83.0, 0, 'possible', 2],[48.0, 70, 'stable', 1]

II
###High throughput screening for spin-gapless semiconductors in quaternary Heusler compounds|Qiang Gao,Ingo Opahle,Hongbin Zhang###
(1158399, 1158400)
 It isdemonstrated that all four types of SG<missing VAR>Ss can be realized, defined based on thespin characters of the bands around the Fermi energy, and the type-II SG<missing VAR>Ss showpromising transport properties for spintronic applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[249.0, 0, 'YZ', 3],[150.0, 21, ',', 2],[147.0, 26, ',', 2],[130.0, 12, ',', 2],[128.0, 0, 'possible', 2],[93.0, 70, 'stable', 1]

S
###High throughput screening for spin-gapless semiconductors in quaternary Heusler compounds|Qiang Gao,Ingo Opahle,Hongbin Zhang###
(1158402, 1158402)
 It isdemonstrated that all four types of SG<missing VAR>Ss can be realized, defined based on thespin characters of the bands around the Fermi energy, and the type-II SG<missing VAR>Ss showpromising transport properties for spintronic applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[252.0, 0, 'YZ', 3],[153.0, 21, ',', 2],[150.0, 26, ',', 2],[133.0, 12, ',', 2],[131.0, 0, 'possible', 2],[96.0, 70, 'stable', 1]

V2O3
###The magnetic origin of the metal-insulator transition in V2O3: Mott meets Slater|J. Trastoy,A. Camjayi,J. del Valle,Y. Kalcheim,J. -P. Crocombette,J. E. Villegas,M. Rozenberg,D. Ravelosona,Ivan K. Schuller###
(1158486, 1158489)
The magnetic origin of the metal-insulator transition in V2O3 Mott meets Slater.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V2O3
###The magnetic origin of the metal-insulator transition in V2O3: Mott meets Slater|J. Trastoy,A. Camjayi,J. del Valle,Y. Kalcheim,J. -P. Crocombette,J. E. Villegas,M. Rozenberg,D. Ravelosona,Ivan K. Schuller###
(1158573, 1158576)
 An archetypalexample is V2O3, where electronic, structural and magnetic phase transitionsoccur simultaneously.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###The magnetic origin of the metal-insulator transition in V2O3: Mott meets Slater|J. Trastoy,A. Camjayi,J. del Valle,Y. Kalcheim,J. -P. Crocombette,J. E. Villegas,M. Rozenberg,D. Ravelosona,Ivan K. Schuller###
(1158651, 1158651)
In this work, we demonstrate that magnetism plays the key dominant role.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V2O3
###The magnetic origin of the metal-insulator transition in V2O3: Mott meets Slater|J. Trastoy,A. Camjayi,J. del Valle,Y. Kalcheim,J. -P. Crocombette,J. E. Villegas,M. Rozenberg,D. Ravelosona,Ivan K. Schuller###
(1158714, 1158717)
 Byacting on the magnetic degree of freedom, we reveal an anomalous behaviour ofthe magnetoresistance of V2O3, which provides strong evidence that the originof the MIT in V2O3 is the opening of an antiferromagnetic gap in the presenceof strong electronic correlations.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V2O3
###The magnetic origin of the metal-insulator transition in V2O3: Mott meets Slater|J. Trastoy,A. Camjayi,J. del Valle,Y. Kalcheim,J. -P. Crocombette,J. E. Villegas,M. Rozenberg,D. Ravelosona,Ivan K. Schuller###
(1158745, 1158748)
 Byacting on the magnetic degree of freedom, we reveal an anomalous behaviour ofthe magnetoresistance of V2O3, which provides strong evidence that the originof the MIT in V2O3 is the opening of an antiferromagnetic gap in the presenceof strong electronic correlations.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrAg4As2
###Significant change in the electronic behavior associated with structural distortions in the single crystalline SrAg4As2|Bing Shen,Eve Emmanouilidou,Xiaoyu Deng,Alix McCollam,Jie Xing,Gabriel Kotliar,Amalia I. Coldea,Ni Ni###
(1158816, 1158820)
Significant change in the electronic behavior associated with structural distortions in the single crystalline SrAg4As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 110, 'K', 2],[122.0, 110, 'K', 3],[250.0, 2, 'K', 5],[261.0, 2.13, 'GPa', 5],[303.0, 0.89, 'GPa', 5]

SrAg4As2
###Significant change in the electronic behavior associated with structural distortions in the single crystalline SrAg4As2|Bing Shen,Eve Emmanouilidou,Xiaoyu Deng,Alix McCollam,Jie Xing,Gabriel Kotliar,Amalia I. Coldea,Ni Ni###
(1158854, 1158858)
 We report a combined study of transport and thermodynamic measurements on thelayered pnictide material SrAg4As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 110, 'K', 1],[84.0, 110, 'K', 2],[212.0, 2, 'K', 4],[223.0, 2.13, 'GPa', 4],[265.0, 0.89, 'GPa', 4]

In
###Significant change in the electronic behavior associated with structural distortions in the single crystalline SrAg4As2|Bing Shen,Eve Emmanouilidou,Xiaoyu Deng,Alix McCollam,Jie Xing,Gabriel Kotliar,Amalia I. Coldea,Ni Ni###
(1158961, 1158961)
 In sharp contrast with thefirst-principles calculations based on the crystal structure at roomtemperature, quantum oscillations reveal small Fermi pockets with lighteffective masses, suggesting a significant change in the Fermi surface topologycaused by the low temperature structural distortion.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 110, 'K', 2],[19.0, 110, 'K', 1],[109.0, 2, 'K', 1],[120.0, 2.13, 'GPa', 1],[162.0, 0.89, 'GPa', 1]

No
###Significant change in the electronic behavior associated with structural distortions in the single crystalline SrAg4As2|Bing Shen,Eve Emmanouilidou,Xiaoyu Deng,Alix McCollam,Jie Xing,Gabriel Kotliar,Amalia I. Coldea,Ni Ni###
(1159052, 1159052)
 No superconductivityemerges in SrAg4As2 down to 2 K and under pressures up to 2.13 GPa;instead, the low temperature structural distortion increases linearly withtemperature at a rate of 13 K/G<missing VAR>Pa above 0.89 GPa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0
[135.0, 110, 'K', 3],[110.0, 110, 'K', 2],[18.0, 2, 'K', 0],[29.0, 2.13, 'GPa', 0],[71.0, 0.89, 'GPa', 0]

SrAg4As2
###Significant change in the electronic behavior associated with structural distortions in the single crystalline SrAg4As2|Bing Shen,Eve Emmanouilidou,Xiaoyu Deng,Alix McCollam,Jie Xing,Gabriel Kotliar,Amalia I. Coldea,Ni Ni###
(1159061, 1159065)
 No superconductivityemerges in SrAg4As2 down to 2 K and under pressures up to 2.13 GPa;instead, the low temperature structural distortion increases linearly withtemperature at a rate of 13 K/G<missing VAR>Pa above 0.89 GPa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 110, 'K', 3],[119.0, 110, 'K', 2],[5.0, 2, 'K', 0],[16.0, 2.13, 'GPa', 0],[58.0, 0.89, 'GPa', 0]

K
###Significant change in the electronic behavior associated with structural distortions in the single crystalline SrAg4As2|Bing Shen,Eve Emmanouilidou,Xiaoyu Deng,Alix McCollam,Jie Xing,Gabriel Kotliar,Amalia I. Coldea,Ni Ni###
(1159117, 1159117)
 No superconductivityemerges in SrAg4As2 down to 2 K and under pressures up to 2.13 GPa;instead, the low temperature structural distortion increases linearly withtemperature at a rate of 13 K/G<missing VAR>Pa above 0.89 GPa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[200.0, 110, 'K', 3],[175.0, 110, 'K', 2],[47.0, 2, 'K', 0],[36.0, 2.13, 'GPa', 0],[6.0, 0.89, 'GPa', 0]

Pa
###Significant change in the electronic behavior associated with structural distortions in the single crystalline SrAg4As2|Bing Shen,Eve Emmanouilidou,Xiaoyu Deng,Alix McCollam,Jie Xing,Gabriel Kotliar,Amalia I. Coldea,Ni Ni###
(1159120, 1159120)
 No superconductivityemerges in SrAg4As2 down to 2 K and under pressures up to 2.13 GPa;instead, the low temperature structural distortion increases linearly withtemperature at a rate of 13 K/G<missing VAR>Pa above 0.89 GPa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0
[203.0, 110, 'K', 3],[178.0, 110, 'K', 2],[50.0, 2, 'K', 0],[39.0, 2.13, 'GPa', 0],[3.0, 0.89, 'GPa', 0]

Co2MnSi
###Magnetic and structural properties of Co$_2$MnSi based Heusler compound|S. J. Ahmed,C. Boyer,M. Niewczas###
(1159144, 1159147)
Magnetic and structural properties of Co2MnSi based Heusler compound.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 6.5, '%', 2],[99.0, 7.6, '%', 2],[244.0, 9, 'Tesla', 5]

Co2MnSi
###Magnetic and structural properties of Co$_2$MnSi based Heusler compound|S. J. Ahmed,C. Boyer,M. Niewczas###
(1159185, 1159188)
 The influence of antisite disorder occupancies on the magnetic properties ofthe half-metallic Co2MnSi compound was studied by experimental techniquesand first-principles calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 6.5, '%', 1],[58.0, 7.6, '%', 1],[203.0, 9, 'Tesla', 4]

Mn
###Magnetic and structural properties of Co$_2$MnSi based Heusler compound|S. J. Ahmed,C. Boyer,M. Niewczas###
(1159231, 1159231)
 The neutron diffraction studies show almostidentical amount of Mn and Co disorders of 6.5% and 7.6%, which was found tobe in good agreement with density functional theory (DFT) calculations of thestable Co2MnSi system with the corresponding disorders.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 6.5, '%', 0],[15.0, 7.6, '%', 0],[160.0, 9, 'Tesla', 3]

Co
###Magnetic and structural properties of Co$_2$MnSi based Heusler compound|S. J. Ahmed,C. Boyer,M. Niewczas###
(1159235, 1159235)
 The neutron diffraction studies show almostidentical amount of Mn and Co disorders of 6.5% and 7.6%, which was found tobe in good agreement with density functional theory (DFT) calculations of thestable Co2MnSi system with the corresponding disorders.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 6.5, '%', 0],[11.0, 7.6, '%', 0],[156.0, 9, 'Tesla', 3]

Co2MnSi
###Magnetic and structural properties of Co$_2$MnSi based Heusler compound|S. J. Ahmed,C. Boyer,M. Niewczas###
(1159290, 1159293)
 The neutron diffraction studies show almostidentical amount of Mn and Co disorders of 6.5% and 7.6%, which was found tobe in good agreement with density functional theory (DFT) calculations of thestable Co2MnSi system with the corresponding disorders.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 6.5, '%', 0],[44.0, 7.6, '%', 0],[98.0, 9, 'Tesla', 3]

Mn
###Magnetic and structural properties of Co$_2$MnSi based Heusler compound|S. J. Ahmed,C. Boyer,M. Niewczas###
(1159325, 1159325)
 DFT studies revealthat antiferromagnetic interactions introduced by Mn disorder lead to areduction of the net magnetic moment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 6.5, '%', 1],[79.0, 7.6, '%', 1],[66.0, 9, 'Tesla', 2]

Co2MnSi
###Magnetic and structural properties of Co$_2$MnSi based Heusler compound|S. J. Ahmed,C. Boyer,M. Niewczas###
(1159406, 1159409)
 Transport propertymeasurement under magnetic field up to 9 Tesla revealed a positivemagnetoresistance for bulk Co2MnSi that persists up to room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 6.5, '%', 3],[160.0, 7.6, '%', 3],[15.0, 9, 'Tesla', 0]

K
###Magnetic and structural properties of Co$_2$MnSi based Heusler compound|S. J. Ahmed,C. Boyer,M. Niewczas###
(1159436, 1159436)
 ACurie temperature of sim1014 K was determined for the compound by hightemperature electrical resistivity and dilatometry measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[195.0, 6.5, '%', 4],[190.0, 7.6, '%', 4],[45.0, 9, 'Tesla', 1]

Co
###Electronic transport properties of Co cluster-decorated graphene|Chaoyi Cai,Jian-Hao Chen###
(1159482, 1159482)
Electronic transport properties of Co cluster-decorated graphene.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[230.0, 9, 'T', 4]

H
###Electronic transport properties of Co cluster-decorated graphene|Chaoyi Cai,Jian-Hao Chen###
(1159664, 1159664)
 Scattering of charge carriers by theabsorbed cobalt clusters results in the disappearance of the Shubnikov-de Haas(SdH) oscillations and the appearance of negative magnetoresistance (MR) whichshows no sign of saturation up to an applied magnetic field of 9 T.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 9, 'T', 0]

InSb
###Kondo Correlation Induced Low-Field Magnetoresistance Anomalies in InSb Nanowire Josephson Quantum Dot Devices|C. L. Yu,M. T. Deng,P. Caroff,S. G. Ghalamestani,K. A. Dick,H. Q. Xu###
(1159788, 1159789)
Kondo Correlation Induced Low-Field Magnetoresistance Anomalies in InSb Nanowire Josephson Quantum Dot Devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

InSb
###Kondo Correlation Induced Low-Field Magnetoresistance Anomalies in InSb Nanowire Josephson Quantum Dot Devices|C. L. Yu,M. T. Deng,P. Caroff,S. G. Ghalamestani,K. A. Dick,H. Q. Xu###
(1159841, 1159842)
 We report the observation of sharp suppression of superconductivity-inducedzero-bias conductance peaks at low magnetic fields in InSb nanowire Josephsonquantum dot devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Kondo Correlation Induced Low-Field Magnetoresistance Anomalies in InSb Nanowire Josephson Quantum Dot Devices|C. L. Yu,M. T. Deng,P. Caroff,S. G. Ghalamestani,K. A. Dick,H. Q. Xu###
(1159917, 1159917)
 In weak magneticfields, the zero-bias conductance peak is found to exhibit an unusual negativemagnetoresistance when the Kondo temperature is comparable to thesuperconductor gap.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZrTe5
###Evidence for a strain tuned topological phase transition in ZrTe5|Joshua Mutch,Wei-Chih Chen,Preston Went,Tiema Qian,Ilham Zaky Wilson,Anton Andreev,Cheng-Chien Chen,Jiun-Haw Chu###
(1160374, 1160376)
Evidence for a strain tuned topological phase transition in ZrTe5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZrTe5
###Evidence for a strain tuned topological phase transition in ZrTe5|Joshua Mutch,Wei-Chih Chen,Preston Went,Tiema Qian,Ilham Zaky Wilson,Anton Andreev,Cheng-Chien Chen,Jiun-Haw Chu###
(1160504, 1160506)
 Here we report theobservation of a non-monotonic strain dependence of resistivity and negativelongitudinal magnetoresistance in ZrTe5, which is known to host massive DiracFermions in the bulk.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZrTe5
###Evidence for a strain tuned topological phase transition in ZrTe5|Joshua Mutch,Wei-Chih Chen,Preston Went,Tiema Qian,Ilham Zaky Wilson,Anton Andreev,Cheng-Chien Chen,Jiun-Haw Chu###
(1160606, 1160608)
 This observation suggests thatthe topological state of ZrTe5 is highly sensitive to uniaxial stress.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magneto-transport phenomena in p-doped diamond from first principles|Francesco Macheda,Nicola Bonini###
(1160863, 1160863)
 In particular, our results provide a detailedcharacterisation of the exceptionally high values for mobility and Seebeckcoefficient, and predict a large magnetic field driven enhancement of theSeebeck coefficient, of up to 30% in a magnetic field of 40 kOe already at roomtemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 30, '%', 0],[84.0, 40, 'kOe', 0]

N
###Imaging of current induced Néel vector switching in antiferromagnetic Mn$_2$Au|S. Yu. Bodnar,M. Filianina,S. P. Bommanaboyena,T. Forrest,F. Maccherozzi,A. A. Sapozhnik,Y. Skourski,M. Kläui,M. Jourdan###
(1160975, 1160975)
Imaging of current induced Nel vector switching in antiferromagnetic Mn2Au.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn2Au
###Imaging of current induced Néel vector switching in antiferromagnetic Mn$_2$Au|S. Yu. Bodnar,M. Filianina,S. P. Bommanaboyena,T. Forrest,F. Maccherozzi,A. A. Sapozhnik,Y. Skourski,M. Kläui,M. Jourdan###
(1160986, 1160988)
Imaging of current induced Nel vector switching in antiferromagnetic Mn2Au.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Imaging of current induced Néel vector switching in antiferromagnetic Mn$_2$Au|S. Yu. Bodnar,M. Filianina,S. P. Bommanaboyena,T. Forrest,F. Maccherozzi,A. A. Sapozhnik,Y. Skourski,M. Kläui,M. Jourdan###
(1161001, 1161001)
 The effects of current induced Neel spin-orbit torques on theantiferromagnetic domain structure of epitaxial Mn2Au thin films wereinvestigated by X<missing VAR>-ray magnetic linear dichroism - photoemission electronmicroscopy (XMLD-PEEM).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn2Au
###Imaging of current induced Néel vector switching in antiferromagnetic Mn$_2$Au|S. Yu. Bodnar,M. Filianina,S. P. Bommanaboyena,T. Forrest,F. Maccherozzi,A. A. Sapozhnik,Y. Skourski,M. Kläui,M. Jourdan###
(1161025, 1161027)
 The effects of current induced Neel spin-orbit torques on theantiferromagnetic domain structure of epitaxial Mn2Au thin films wereinvestigated by X<missing VAR>-ray magnetic linear dichroism - photoemission electronmicroscopy (XMLD-PEEM).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Imaging of current induced Néel vector switching in antiferromagnetic Mn$_2$Au|S. Yu. Bodnar,M. Filianina,S. P. Bommanaboyena,T. Forrest,F. Maccherozzi,A. A. Sapozhnik,Y. Skourski,M. Kläui,M. Jourdan###
(1161065, 1161065)
 The effects of current induced Neel spin-orbit torques on theantiferromagnetic domain structure of epitaxial Mn2Au thin films wereinvestigated by X<missing VAR>-ray magnetic linear dichroism - photoemission electronmicroscopy (XMLD-PEEM).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Imaging of current induced Néel vector switching in antiferromagnetic Mn$_2$Au|S. Yu. Bodnar,M. Filianina,S. P. Bommanaboyena,T. Forrest,F. Maccherozzi,A. A. Sapozhnik,Y. Skourski,M. Kläui,M. Jourdan###
(1161085, 1161085)
 We observed current induced switching of AFM<missing VAR> domainsessentially corresponding to morphological features of the samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Imaging of current induced Néel vector switching in antiferromagnetic Mn$_2$Au|S. Yu. Bodnar,M. Filianina,S. P. Bommanaboyena,T. Forrest,F. Maccherozzi,A. A. Sapozhnik,Y. Skourski,M. Kläui,M. Jourdan###
(1161119, 1161119)
 Reversibleas well as irreversible Neel vector reorientation was obtained in differentparts of the samples and the switching of up to 30 % of all domains in thefield of view of 10 mum<missing VAR> is demonstrated.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Imaging of current induced Néel vector switching in antiferromagnetic Mn$_2$Au|S. Yu. Bodnar,M. Filianina,S. P. Bommanaboyena,T. Forrest,F. Maccherozzi,A. A. Sapozhnik,Y. Skourski,M. Kläui,M. Jourdan###
(1161228, 1161228)
 Our direct microscopicalobservations are compared to and fully consistent with anisotropicmagnetoresistance effects previously attributed to current induced Neelvector switching in Mn2Au.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn2Au
###Imaging of current induced Néel vector switching in antiferromagnetic Mn$_2$Au|S. Yu. Bodnar,M. Filianina,S. P. Bommanaboyena,T. Forrest,F. Maccherozzi,A. A. Sapozhnik,Y. Skourski,M. Kläui,M. Jourdan###
(1161238, 1161240)
 Our direct microscopicalobservations are compared to and fully consistent with anisotropicmagnetoresistance effects previously attributed to current induced Neelvector switching in Mn2Au.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnPS3
###Magnon transport in quasi-two-dimensional van der Waals antiferromagnets|Wenyu Xing,Luyi Qiu,Xirui Wang,Yunyan Yao,Yang Ma,Ranran Cai,Shuang Jia,X. C. Xie,Wei Han###
(1161469, 1161472)
 Here, we report theexperimental observation of long-distance magnon transport inquasi-twodimensional van der Waals antiferromagnet MnPS3, which demonstratesthe 2D magnets as promising material candidates for magnonics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0.6,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[190.0, 2, 'D', 4],[73.0, 2, 'D', 1],[9.0, 2, 'D', 0],[29.0, 2, 'D', 1],[118.0, 2, 'D', 2]

As
###Magnon transport in quasi-two-dimensional van der Waals antiferromagnets|Wenyu Xing,Luyi Qiu,Xirui Wang,Yunyan Yao,Yang Ma,Ranran Cai,Shuang Jia,X. C. Xie,Wei Han###
(1161498, 1161498)
 As the 2D MnPS3thickness decreases, a shorter magnon diffusion length is observed, which couldbe attributed to the surface-impurity-induced magnon scattering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[219.0, 2, 'D', 5],[102.0, 2, 'D', 2],[17.0, 2, 'D', 1],[3.0, 2, 'D', 0],[92.0, 2, 'D', 1]

MnPS3
###Magnon transport in quasi-two-dimensional van der Waals antiferromagnets|Wenyu Xing,Luyi Qiu,Xirui Wang,Yunyan Yao,Yang Ma,Ranran Cai,Shuang Jia,X. C. Xie,Wei Han###
(1161503, 1161506)
 As the 2D MnPS3thickness decreases, a shorter magnon diffusion length is observed, which couldbe attributed to the surface-impurity-induced magnon scattering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0.6,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[224.0, 2, 'D', 5],[107.0, 2, 'D', 2],[22.0, 2, 'D', 1],[2.0, 2, 'D', 0],[84.0, 2, 'D', 1]

Hf0.5Zr0.5O2
###Magnetic tunnel junctions based on ferroelectric Hf0.5Zr0.5O2 tunnel barriers|Yingfen Wei,Sylvia Matzen,Guillaume Agnus,Mart Salverda,Pavan Nukala,Thomas Maroutian,Qihong Chen,Jianting Ye,Philippe Lecoeur,Beatriz Noheda###
(1161621, 1161626)
Magnetic tunnel junctions based on ferroelectric Hf0.5Zr0.5O2 tunnel barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 2, 'nm', 3]

In
###Magnetic tunnel junctions based on ferroelectric Hf0.5Zr0.5O2 tunnel barriers|Yingfen Wei,Sylvia Matzen,Guillaume Agnus,Mart Salverda,Pavan Nukala,Thomas Maroutian,Qihong Chen,Jianting Ye,Philippe Lecoeur,Beatriz Noheda###
(1161691, 1161691)
 In parallel, Hafnia based ferroelectrics areshowing great potential for device miniaturization down to the nanoscale.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 2, 'nm', 1]

Hf0.5Zr0.5O2
###Magnetic tunnel junctions based on ferroelectric Hf0.5Zr0.5O2 tunnel barriers|Yingfen Wei,Sylvia Matzen,Guillaume Agnus,Mart Salverda,Pavan Nukala,Thomas Maroutian,Qihong Chen,Jianting Ye,Philippe Lecoeur,Beatriz Noheda###
(1161735, 1161740)
 Herewe utilize ferroelectric Hf0.5Zr0.5O2 (HZ<missing VAR>O) with thickness of only 2 nm,epitaxially grown on La0.7Sr0.3MnO3 (LSMO) ferromagnetic electrodes, as a largeband-gap insulating barrier integrated in MFTJs with cobalt top electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 2, 'nm', 0]

H
###Magnetic tunnel junctions based on ferroelectric Hf0.5Zr0.5O2 tunnel barriers|Yingfen Wei,Sylvia Matzen,Guillaume Agnus,Mart Salverda,Pavan Nukala,Thomas Maroutian,Qihong Chen,Jianting Ye,Philippe Lecoeur,Beatriz Noheda###
(1161743, 1161743)
 Herewe utilize ferroelectric Hf0.5Zr0.5O2 (HZ<missing VAR>O) with thickness of only 2 nm,epitaxially grown on La0.7Sr0.3MnO3 (LSMO) ferromagnetic electrodes, as a largeband-gap insulating barrier integrated in MFTJs with cobalt top electrodes.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 2, 'nm', 0]

O
###Magnetic tunnel junctions based on ferroelectric Hf0.5Zr0.5O2 tunnel barriers|Yingfen Wei,Sylvia Matzen,Guillaume Agnus,Mart Salverda,Pavan Nukala,Thomas Maroutian,Qihong Chen,Jianting Ye,Philippe Lecoeur,Beatriz Noheda###
(1161745, 1161745)
 Herewe utilize ferroelectric Hf0.5Zr0.5O2 (HZ<missing VAR>O) with thickness of only 2 nm,epitaxially grown on La0.7Sr0.3MnO3 (LSMO) ferromagnetic electrodes, as a largeband-gap insulating barrier integrated in MFTJs with cobalt top electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 2, 'nm', 0]

La0.7Sr0.3MnO3
###Magnetic tunnel junctions based on ferroelectric Hf0.5Zr0.5O2 tunnel barriers|Yingfen Wei,Sylvia Matzen,Guillaume Agnus,Mart Salverda,Pavan Nukala,Thomas Maroutian,Qihong Chen,Jianting Ye,Philippe Lecoeur,Beatriz Noheda###
(1161765, 1161771)
 Herewe utilize ferroelectric Hf0.5Zr0.5O2 (HZ<missing VAR>O) with thickness of only 2 nm,epitaxially grown on La0.7Sr0.3MnO3 (LSMO) ferromagnetic electrodes, as a largeband-gap insulating barrier integrated in MFTJs with cobalt top electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 2, 'nm', 0]

O
###Magnetic tunnel junctions based on ferroelectric Hf0.5Zr0.5O2 tunnel barriers|Yingfen Wei,Sylvia Matzen,Guillaume Agnus,Mart Salverda,Pavan Nukala,Thomas Maroutian,Qihong Chen,Jianting Ye,Philippe Lecoeur,Beatriz Noheda###
(1161777, 1161777)
 Herewe utilize ferroelectric Hf0.5Zr0.5O2 (HZ<missing VAR>O) with thickness of only 2 nm,epitaxially grown on La0.7Sr0.3MnO3 (LSMO) ferromagnetic electrodes, as a largeband-gap insulating barrier integrated in MFTJs with cobalt top electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 2, 'nm', 0]

As
###Magnetic tunnel junctions based on ferroelectric Hf0.5Zr0.5O2 tunnel barriers|Yingfen Wei,Sylvia Matzen,Guillaume Agnus,Mart Salverda,Pavan Nukala,Thomas Maroutian,Qihong Chen,Jianting Ye,Philippe Lecoeur,Beatriz Noheda###
(1161818, 1161818)
 Aspreviously reported for other MFTJs with similar electrodes, the tunnelingmagnetoresistance (TMR) can be tuned and its sign can even be reversed by thebias voltage across the junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 2, 'nm', 1]

H
###Ferromagnetic order beyond the superconducting dome in a cuprate superconductor|Tarapada Sarkar,D. S. Wei,J. Zhang,N. R. Poniatowski,P. R. Mandal,A. Kapitulnik,Richard L. Greene###
(1161973, 1161973)
 The cuprate high-temperature superconductors (HT<missing VAR>SC) have been the subject ofintense study for more than 30 years with no consensus yet on the underlyingmechanism of the superconductivity.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 30, 'years', 0],[101.0, 1, ',', 1],[182.0, 4, 'K', 3],[297.0, 4, ',', 4]

C
###Ferromagnetic order beyond the superconducting dome in a cuprate superconductor|Tarapada Sarkar,D. S. Wei,J. Zhang,N. R. Poniatowski,P. R. Mandal,A. Kapitulnik,Richard L. Greene###
(1161976, 1161976)
 The cuprate high-temperature superconductors (HT<missing VAR>SC) have been the subject ofintense study for more than 30 years with no consensus yet on the underlyingmechanism of the superconductivity.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 30, 'years', 0],[98.0, 1, ',', 1],[179.0, 4, 'K', 3],[294.0, 4, ',', 4]

F
###Ferromagnetic order beyond the superconducting dome in a cuprate superconductor|Tarapada Sarkar,D. S. Wei,J. Zhang,N. R. Poniatowski,P. R. Mandal,A. Kapitulnik,Richard L. Greene###
(1162067, 1162067)
 Conventional wisdom dictates that themysterious and extraordinary properties of the cuprates arise from doping astrongly correlated antiferromagnetic (AFM) insulator (1,2).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 30, 'years', 1],[7.0, 1, ',', 0],[88.0, 4, 'K', 2],[203.0, 4, ',', 3]

(SC)
###Ferromagnetic order beyond the superconducting dome in a cuprate superconductor|Tarapada Sarkar,D. S. Wei,J. Zhang,N. R. Poniatowski,P. R. Mandal,A. Kapitulnik,Richard L. Greene###
(1162101, 1162104)
 The highlyoverdoped cuprates-those beyond the dome of superconductivity (SC)--areconsidered to be conventional Fermi liquid metals (3).
Featurization successful!
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 30, 'years', 2],[27.0, 1, ',', 1],[51.0, 4, 'K', 1],[166.0, 4, ',', 2]

F
###Ferromagnetic order beyond the superconducting dome in a cuprate superconductor|Tarapada Sarkar,D. S. Wei,J. Zhang,N. R. Poniatowski,P. R. Mandal,A. Kapitulnik,Richard L. Greene###
(1162150, 1162150)
 Here, we report theemergence of itinerant ferromagnetic order (FM) below 4K for doping beyond theSC dome in electron-doped La2-x Cex<missing VAR>CuO4 (L<missing VAR>CCO).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 30, 'years', 3],[76.0, 1, ',', 2],[5.0, 4, 'K', 0],[120.0, 4, ',', 1]

SC
###Ferromagnetic order beyond the superconducting dome in a cuprate superconductor|Tarapada Sarkar,D. S. Wei,J. Zhang,N. R. Poniatowski,P. R. Mandal,A. Kapitulnik,Richard L. Greene###
(1162166, 1162167)
 Here, we report theemergence of itinerant ferromagnetic order (FM) below 4K for doping beyond theSC dome in electron-doped La2-x Cex<missing VAR>CuO4 (L<missing VAR>CCO).
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 30, 'years', 3],[92.0, 1, ',', 2],[11.0, 4, 'K', 0],[103.0, 4, ',', 1]

La2-x
###Ferromagnetic order beyond the superconducting dome in a cuprate superconductor|Tarapada Sarkar,D. S. Wei,J. Zhang,N. R. Poniatowski,P. R. Mandal,A. Kapitulnik,Richard L. Greene###
(1162177, 1162180)
 Here, we report theemergence of itinerant ferromagnetic order (FM) below 4K for doping beyond theSC dome in electron-doped La2-x Cex<missing VAR>CuO4 (L<missing VAR>CCO).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[178.0, 30, 'years', 3],[103.0, 1, ',', 2],[22.0, 4, 'K', 0],[90.0, 4, ',', 1]

Ce
###Ferromagnetic order beyond the superconducting dome in a cuprate superconductor|Tarapada Sarkar,D. S. Wei,J. Zhang,N. R. Poniatowski,P. R. Mandal,A. Kapitulnik,Richard L. Greene###
(1162182, 1162182)
 Here, we report theemergence of itinerant ferromagnetic order (FM) below 4K for doping beyond theSC dome in electron-doped La2-x Cex<missing VAR>CuO4 (L<missing VAR>CCO).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[183.0, 30, 'years', 3],[108.0, 1, ',', 2],[27.0, 4, 'K', 0],[88.0, 4, ',', 1]

CuO4
###Ferromagnetic order beyond the superconducting dome in a cuprate superconductor|Tarapada Sarkar,D. S. Wei,J. Zhang,N. R. Poniatowski,P. R. Mandal,A. Kapitulnik,Richard L. Greene###
(1162184, 1162186)
 Here, we report theemergence of itinerant ferromagnetic order (FM) below 4K for doping beyond theSC dome in electron-doped La2-x Cex<missing VAR>CuO4 (L<missing VAR>CCO).
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[185.0, 30, 'years', 3],[110.0, 1, ',', 2],[29.0, 4, 'K', 0],[84.0, 4, ',', 1]

O
###Ferromagnetic order beyond the superconducting dome in a cuprate superconductor|Tarapada Sarkar,D. S. Wei,J. Zhang,N. R. Poniatowski,P. R. Mandal,A. Kapitulnik,Richard L. Greene###
(1162192, 1162192)
 Here, we report theemergence of itinerant ferromagnetic order (FM) below 4K for doping beyond theSC dome in electron-doped La2-x Cex<missing VAR>CuO4 (L<missing VAR>CCO).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[193.0, 30, 'years', 3],[118.0, 1, ',', 2],[37.0, 4, 'K', 0],[78.0, 4, ',', 1]

F
###Ferromagnetic order beyond the superconducting dome in a cuprate superconductor|Tarapada Sarkar,D. S. Wei,J. Zhang,N. R. Poniatowski,P. R. Mandal,A. Kapitulnik,Richard L. Greene###
(1162205, 1162205)
 The existence ofthis FM<missing VAR> order is evidenced by negative, anisotopic and hystereticmagnetoresistance, hysteretic magnetization, and the polar Kerr effect, all ofwhich are standard signatures of itinerant FM<missing VAR> in metals (4,5).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[206.0, 30, 'years', 4],[131.0, 1, ',', 3],[50.0, 4, 'K', 1],[65.0, 4, ',', 0]

F
###Ferromagnetic order beyond the superconducting dome in a cuprate superconductor|Tarapada Sarkar,D. S. Wei,J. Zhang,N. R. Poniatowski,P. R. Mandal,A. Kapitulnik,Richard L. Greene###
(1162262, 1162262)
 The existence ofthis FM<missing VAR> order is evidenced by negative, anisotopic and hystereticmagnetoresistance, hysteretic magnetization, and the polar Kerr effect, all ofwhich are standard signatures of itinerant FM<missing VAR> in metals (4,5).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[263.0, 30, 'years', 4],[188.0, 1, ',', 3],[107.0, 4, 'K', 1],[8.0, 4, ',', 0]

CuMnAs
###Current-induced fragmentation of antiferromagnetic domains|M. S. Wörnle,P. Welter,Z. Kašpar,K. Olejník,V. Novák,R. P. Campion,P. Wadley,T. Jungwirth,C. L. Degen,P. Gambardella###
(1162421, 1162423)
 Recent experiments in CuMnAs havedemonstrated giant resistive switching signals in single-layerantiferromagnetic films together with analog switching and relaxationcharacteristics relevant for neuromorphic computing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NV
###Current-induced fragmentation of antiferromagnetic domains|M. S. Wörnle,P. Welter,Z. Kašpar,K. Olejník,V. Novák,R. P. Campion,P. Wadley,T. Jungwirth,C. L. Degen,P. Gambardella###
(1162490, 1162491)
 Here we reportsimultaneous electrical pulsing and scanning NV magnetometry ofantiferromagnetic domains in CuMnAs performed using a pump-probe scheme.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CuMnAs
###Current-induced fragmentation of antiferromagnetic domains|M. S. Wörnle,P. Welter,Z. Kašpar,K. Olejník,V. Novák,R. P. Campion,P. Wadley,T. Jungwirth,C. L. Degen,P. Gambardella###
(1162504, 1162506)
 Here we reportsimultaneous electrical pulsing and scanning NV magnetometry ofantiferromagnetic domains in CuMnAs performed using a pump-probe scheme.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CuMnAs
###Current-induced fragmentation of antiferromagnetic domains|M. S. Wörnle,P. Welter,Z. Kašpar,K. Olejník,V. Novák,R. P. Campion,P. Wadley,T. Jungwirth,C. L. Degen,P. Gambardella###
(1162682, 1162684)
Our simultaneous imaging and resistance measurements show a correlation betweenthe antiferromagnetic domain fragmentation and the largest resistive switchingsignals in CuMnAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Observation of the dominant spin-triplet supercurrent in Josephson spin valves with strong Ni ferromagnets|O. M. Kapran,A. Iovan,T. Golod,V. M. Krasnov###
(1162721, 1162721)
Observation of the dominant spin-triplet supercurrent in Josephson spin valves with strong Ni ferromagnets.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Observation of the dominant spin-triplet supercurrent in Josephson spin valves with strong Ni ferromagnets|O. M. Kapran,A. Iovan,T. Golod,V. M. Krasnov###
(1162751, 1162751)
 We study experimentally nanoscale Josephson junctions and Josephsonspin-valves containing strong Ni ferromagnets.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(H)
###Observation of the dominant spin-triplet supercurrent in Josephson spin valves with strong Ni ferromagnets|O. M. Kapran,A. Iovan,T. Golod,V. M. Krasnov###
(1162789, 1162791)
 We observe that in contrast tojunctions, spin valves with the same geometry exhibit anomalous Ic(H) patternswith two peaks separated by a dip.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Observation of the dominant spin-triplet supercurrent in Josephson spin valves with strong Ni ferromagnets|O. M. Kapran,A. Iovan,T. Golod,V. M. Krasnov###
(1162973, 1162973)
 A quantitative analysis brings us to aconclusion that the triplet current in out Ni-based spin-valves isapproximately three times larger than the conventional singlet supercurrent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(CISS)
###Detecting chirality in two-terminal electronic devices|Xu Yang,Caspar H. van der Wal,Bart J. van Wees###
(1163073, 1163078)
 Central to spintronics is the interconversion between electronic charge andspin currents, and this can arise from the chirality-induced spin selectivity(CISS) effect.
Featurization successful!
0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[216.0, 2, 'T', 6]

CISS
###Detecting chirality in two-terminal electronic devices|Xu Yang,Caspar H. van der Wal,Bart J. van Wees###
(1163083, 1163086)
 CISS is often studied as magnetoresistance (MR) in two-terminal(2T) electronic devices containing a chiral (molecular) component and aferromagnet.
Featurization terminated normally.
0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[208.0, 2, 'T', 5]

CISS
###Detecting chirality in two-terminal electronic devices|Xu Yang,Caspar H. van der Wal,Bart J. van Wees###
(1163267, 1163270)
 Additionally, we reveal how CISS can bedetected in the linear response regime in magnet-free 2T devices, either byforming a chirality-based spin-valve using two or more chiral components, or byHanle spin precession in devices with a single chiral component.
Featurization terminated normally.
0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 2, 'T', 0]

Ni
###Change of electronic properties on transition from high-entropy to Ni-rich (TiZrNbCu)(1-x)Ni(x) alloys|Marko Kuveždić,Emil Tafra,Mario Basletić,Ramir Ristić,Petar Pervan,Vesna Mikšić Trontl,Ignacio A Figueroa,Emil Babić###
(1163416, 1163416)
Change of electronic properties on transition from high-entropy to Ni-rich (TiZrNbCu)(1-x)Ni(x) alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(TiZrNbCu)
###Change of electronic properties on transition from high-entropy to Ni-rich (TiZrNbCu)(1-x)Ni(x) alloys|Marko Kuveždić,Emil Tafra,Mario Basletić,Ramir Ristić,Petar Pervan,Vesna Mikšić Trontl,Ignacio A Figueroa,Emil Babić###
(1163420, 1163425)
Change of electronic properties on transition from high-entropy to Ni-rich (TiZrNbCu)(1-x)Ni(x) alloys.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Change of electronic properties on transition from high-entropy to Ni-rich (TiZrNbCu)(1-x)Ni(x) alloys|Marko Kuveždić,Emil Tafra,Mario Basletić,Ramir Ristić,Petar Pervan,Vesna Mikšić Trontl,Ignacio A Figueroa,Emil Babić###
(1163431, 1163431)
Change of electronic properties on transition from high-entropy to Ni-rich (TiZrNbCu)(1-x)Ni(x) alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(TiZrNbCu)
###Change of electronic properties on transition from high-entropy to Ni-rich (TiZrNbCu)(1-x)Ni(x) alloys|Marko Kuveždić,Emil Tafra,Mario Basletić,Ramir Ristić,Petar Pervan,Vesna Mikšić Trontl,Ignacio A Figueroa,Emil Babić###
(1163460, 1163465)
 We present results of comprehensive study of electronic properties of(TiZrNbCu)(1-x)Ni(x) metallic glasses performed in broad composition range x<missing VAR>encompassing both, high entropy (HE) range, and conventional Ni-base alloyconcentration range, x<missing VAR> > 0.35.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Change of electronic properties on transition from high-entropy to Ni-rich (TiZrNbCu)(1-x)Ni(x) alloys|Marko Kuveždić,Emil Tafra,Mario Basletić,Ramir Ristić,Petar Pervan,Vesna Mikšić Trontl,Ignacio A Figueroa,Emil Babić###
(1163471, 1163471)
 We present results of comprehensive study of electronic properties of(TiZrNbCu)(1-x)Ni(x) metallic glasses performed in broad composition range x<missing VAR>encompassing both, high entropy (HE) range, and conventional Ni-base alloyconcentration range, x<missing VAR> > 0.35.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Change of electronic properties on transition from high-entropy to Ni-rich (TiZrNbCu)(1-x)Ni(x) alloys|Marko Kuveždić,Emil Tafra,Mario Basletić,Ramir Ristić,Petar Pervan,Vesna Mikšić Trontl,Ignacio A Figueroa,Emil Babić###
(1163503, 1163503)
 We present results of comprehensive study of electronic properties of(TiZrNbCu)(1-x)Ni(x) metallic glasses performed in broad composition range x<missing VAR>encompassing both, high entropy (HE) range, and conventional Ni-base alloyconcentration range, x<missing VAR> > 0.35.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Change of electronic properties on transition from high-entropy to Ni-rich (TiZrNbCu)(1-x)Ni(x) alloys|Marko Kuveždić,Emil Tafra,Mario Basletić,Ramir Ristić,Petar Pervan,Vesna Mikšić Trontl,Ignacio A Figueroa,Emil Babić###
(1163514, 1163514)
 We present results of comprehensive study of electronic properties of(TiZrNbCu)(1-x)Ni(x) metallic glasses performed in broad composition range x<missing VAR>encompassing both, high entropy (HE) range, and conventional Ni-base alloyconcentration range, x<missing VAR> > 0.35.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Change of electronic properties on transition from high-entropy to Ni-rich (TiZrNbCu)(1-x)Ni(x) alloys|Marko Kuveždić,Emil Tafra,Mario Basletić,Ramir Ristić,Petar Pervan,Vesna Mikšić Trontl,Ignacio A Figueroa,Emil Babić###
(1163562, 1163562)
 The electronic structure studied byphotoemission spectroscopy and low temperature specific heat (LTSH) reveal asplit-band structure of density of states inside valence band with d<missing VAR>-electronsof Ti, Zr, Nb and also Ni present at Fermi level N(E<missing VAR>F), whereas LTSH andmagnetoresistivity results show that variation of N(E<missing VAR>F) with x<missing VAR> changes inNi-base regime.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ti
###Change of electronic properties on transition from high-entropy to Ni-rich (TiZrNbCu)(1-x)Ni(x) alloys|Marko Kuveždić,Emil Tafra,Mario Basletić,Ramir Ristić,Petar Pervan,Vesna Mikšić Trontl,Ignacio A Figueroa,Emil Babić###
(1163599, 1163599)
 The electronic structure studied byphotoemission spectroscopy and low temperature specific heat (LTSH) reveal asplit-band structure of density of states inside valence band with d<missing VAR>-electronsof Ti, Zr, Nb and also Ni present at Fermi level N(E<missing VAR>F), whereas LTSH andmagnetoresistivity results show that variation of N(E<missing VAR>F) with x<missing VAR> changes inNi-base regime.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Zr
###Change of electronic properties on transition from high-entropy to Ni-rich (TiZrNbCu)(1-x)Ni(x) alloys|Marko Kuveždić,Emil Tafra,Mario Basletić,Ramir Ristić,Petar Pervan,Vesna Mikšić Trontl,Ignacio A Figueroa,Emil Babić###
(1163602, 1163602)
 The electronic structure studied byphotoemission spectroscopy and low temperature specific heat (LTSH) reveal asplit-band structure of density of states inside valence band with d<missing VAR>-electronsof Ti, Zr, Nb and also Ni present at Fermi level N(E<missing VAR>F), whereas LTSH andmagnetoresistivity results show that variation of N(E<missing VAR>F) with x<missing VAR> changes inNi-base regime.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nb
###Change of electronic properties on transition from high-entropy to Ni-rich (TiZrNbCu)(1-x)Ni(x) alloys|Marko Kuveždić,Emil Tafra,Mario Basletić,Ramir Ristić,Petar Pervan,Vesna Mikšić Trontl,Ignacio A Figueroa,Emil Babić###
(1163605, 1163605)
 The electronic structure studied byphotoemission spectroscopy and low temperature specific heat (LTSH) reveal asplit-band structure of density of states inside valence band with d<missing VAR>-electronsof Ti, Zr, Nb and also Ni present at Fermi level N(E<missing VAR>F), whereas LTSH andmagnetoresistivity results show that variation of N(E<missing VAR>F) with x<missing VAR> changes inNi-base regime.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Change of electronic properties on transition from high-entropy to Ni-rich (TiZrNbCu)(1-x)Ni(x) alloys|Marko Kuveždić,Emil Tafra,Mario Basletić,Ramir Ristić,Petar Pervan,Vesna Mikšić Trontl,Ignacio A Figueroa,Emil Babić###
(1163611, 1163611)
 The electronic structure studied byphotoemission spectroscopy and low temperature specific heat (LTSH) reveal asplit-band structure of density of states inside valence band with d<missing VAR>-electronsof Ti, Zr, Nb and also Ni present at Fermi level N(E<missing VAR>F), whereas LTSH andmagnetoresistivity results show that variation of N(E<missing VAR>F) with x<missing VAR> changes inNi-base regime.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Change of electronic properties on transition from high-entropy to Ni-rich (TiZrNbCu)(1-x)Ni(x) alloys|Marko Kuveždić,Emil Tafra,Mario Basletić,Ramir Ristić,Petar Pervan,Vesna Mikšić Trontl,Ignacio A Figueroa,Emil Babić###
(1163621, 1163621)
 The electronic structure studied byphotoemission spectroscopy and low temperature specific heat (LTSH) reveal asplit-band structure of density of states inside valence band with d<missing VAR>-electronsof Ti, Zr, Nb and also Ni present at Fermi level N(E<missing VAR>F), whereas LTSH andmagnetoresistivity results show that variation of N(E<missing VAR>F) with x<missing VAR> changes inNi-base regime.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Change of electronic properties on transition from high-entropy to Ni-rich (TiZrNbCu)(1-x)Ni(x) alloys|Marko Kuveždić,Emil Tafra,Mario Basletić,Ramir Ristić,Petar Pervan,Vesna Mikšić Trontl,Ignacio A Figueroa,Emil Babić###
(1163624, 1163624)
 The electronic structure studied byphotoemission spectroscopy and low temperature specific heat (LTSH) reveal asplit-band structure of density of states inside valence band with d<missing VAR>-electronsof Ti, Zr, Nb and also Ni present at Fermi level N(E<missing VAR>F), whereas LTSH andmagnetoresistivity results show that variation of N(E<missing VAR>F) with x<missing VAR> changes inNi-base regime.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SH
###Change of electronic properties on transition from high-entropy to Ni-rich (TiZrNbCu)(1-x)Ni(x) alloys|Marko Kuveždić,Emil Tafra,Mario Basletić,Ramir Ristić,Petar Pervan,Vesna Mikšić Trontl,Ignacio A Figueroa,Emil Babić###
(1163632, 1163633)
 The electronic structure studied byphotoemission spectroscopy and low temperature specific heat (LTSH) reveal asplit-band structure of density of states inside valence band with d<missing VAR>-electronsof Ti, Zr, Nb and also Ni present at Fermi level N(E<missing VAR>F), whereas LTSH andmagnetoresistivity results show that variation of N(E<missing VAR>F) with x<missing VAR> changes inNi-base regime.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Change of electronic properties on transition from high-entropy to Ni-rich (TiZrNbCu)(1-x)Ni(x) alloys|Marko Kuveždić,Emil Tafra,Mario Basletić,Ramir Ristić,Petar Pervan,Vesna Mikšić Trontl,Ignacio A Figueroa,Emil Babić###
(1163650, 1163650)
 The electronic structure studied byphotoemission spectroscopy and low temperature specific heat (LTSH) reveal asplit-band structure of density of states inside valence band with d<missing VAR>-electronsof Ti, Zr, Nb and also Ni present at Fermi level N(E<missing VAR>F), whereas LTSH andmagnetoresistivity results show that variation of N(E<missing VAR>F) with x<missing VAR> changes inNi-base regime.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Change of electronic properties on transition from high-entropy to Ni-rich (TiZrNbCu)(1-x)Ni(x) alloys|Marko Kuveždić,Emil Tafra,Mario Basletić,Ramir Ristić,Petar Pervan,Vesna Mikšić Trontl,Ignacio A Figueroa,Emil Babić###
(1163653, 1163653)
 The electronic structure studied byphotoemission spectroscopy and low temperature specific heat (LTSH) reveal asplit-band structure of density of states inside valence band with d<missing VAR>-electronsof Ti, Zr, Nb and also Ni present at Fermi level N(E<missing VAR>F), whereas LTSH andmagnetoresistivity results show that variation of N(E<missing VAR>F) with x<missing VAR> changes inNi-base regime.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Change of electronic properties on transition from high-entropy to Ni-rich (TiZrNbCu)(1-x)Ni(x) alloys|Marko Kuveždić,Emil Tafra,Mario Basletić,Ramir Ristić,Petar Pervan,Vesna Mikšić Trontl,Ignacio A Figueroa,Emil Babić###
(1163665, 1163665)
 The electronic structure studied byphotoemission spectroscopy and low temperature specific heat (LTSH) reveal asplit-band structure of density of states inside valence band with d<missing VAR>-electronsof Ti, Zr, Nb and also Ni present at Fermi level N(E<missing VAR>F), whereas LTSH andmagnetoresistivity results show that variation of N(E<missing VAR>F) with x<missing VAR> changes inNi-base regime.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Change of electronic properties on transition from high-entropy to Ni-rich (TiZrNbCu)(1-x)Ni(x) alloys|Marko Kuveždić,Emil Tafra,Mario Basletić,Ramir Ristić,Petar Pervan,Vesna Mikšić Trontl,Ignacio A Figueroa,Emil Babić###
(1163697, 1163697)
 The variation of superconducting transition temperatures with x<missing VAR>closely follows that of N(E<missing VAR>F).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Change of electronic properties on transition from high-entropy to Ni-rich (TiZrNbCu)(1-x)Ni(x) alloys|Marko Kuveždić,Emil Tafra,Mario Basletić,Ramir Ristić,Petar Pervan,Vesna Mikšić Trontl,Ignacio A Figueroa,Emil Babić###
(1163700, 1163700)
 The variation of superconducting transition temperatures with x<missing VAR>closely follows that of N(E<missing VAR>F).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Change of electronic properties on transition from high-entropy to Ni-rich (TiZrNbCu)(1-x)Ni(x) alloys|Marko Kuveždić,Emil Tafra,Mario Basletić,Ramir Ristić,Petar Pervan,Vesna Mikšić Trontl,Ignacio A Figueroa,Emil Babić###
(1163781, 1163781)
 The electrical resistivities of all alloys arehigh and decrease with increasing temperature over most of explored temperaturerange, and their temperature dependence seems dominated by weak localizationeffects over a broad temperature range (10-300 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Change of electronic properties on transition from high-entropy to Ni-rich (TiZrNbCu)(1-x)Ni(x) alloys|Marko Kuveždić,Emil Tafra,Mario Basletić,Ramir Ristić,Petar Pervan,Vesna Mikšić Trontl,Ignacio A Figueroa,Emil Babić###
(1163814, 1163814)
 The preliminary study ofHall effect shows positive Hall coefficient that decreases rapidly in Ni-basealloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Resistance fluctuations and Aharonov-Bohm-type oscillations in antidot arrays in the quantum Hall regime|Masanori Kato,Akira Endo,Shingo Katsumoto,Yasuhiro Iye###
(1163964, 1163964)
 One is the aperiodic resistance fluctuations (R<missing VAR>Fs) and the other is theAharonov-Bohm (AB)-type oscillations.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Resistance fluctuations and Aharonov-Bohm-type oscillations in antidot arrays in the quantum Hall regime|Masanori Kato,Akira Endo,Shingo Katsumoto,Yasuhiro Iye###
(1164041, 1164041)
 While the aperiodic R<missing VAR>Fs are attributedto the complex evolution of the conducting network of compressible channels,the AB-type oscillations are interpreted in terms of edge states formed aroundindividual antidots.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SmFeAsO
###Synthesis, crystal structure, microstructure, transport and magnetic properties of SmFeAsO and SmFeAs(O0.93F0.07)|A. Martinelli,M. Ferretti,P. Manfrinetti,A. Palenzona,M. Tropeano,M. R. Cimberle,C. Ferdeghini,R. Valle,M. Putti,A. S. Siri###
(1164155, 1164158)
Synthesis, crystal structure, microstructure, transport and magnetic properties of SmFeAsO and SmFeAs(O0.93F0.07).
Featurization terminated normally.
0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[235.0, 140, 'K', 4],[272.0, 140, 'K', 5]

SmFeAs(O0.93F0.07)
###Synthesis, crystal structure, microstructure, transport and magnetic properties of SmFeAsO and SmFeAs(O0.93F0.07)|A. Martinelli,M. Ferretti,P. Manfrinetti,A. Palenzona,M. Tropeano,M. R. Cimberle,C. Ferdeghini,R. Valle,M. Putti,A. S. Siri###
(1164162, 1164170)
Synthesis, crystal structure, microstructure, transport and magnetic properties of SmFeAsO and SmFeAs(O0.93F0.07).
Featurization terminated normally.
0,0,0,0,0,0,0,0.2325,0.0175,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[223.0, 140, 'K', 4],[260.0, 140, 'K', 5]

SmFeAsO
###Synthesis, crystal structure, microstructure, transport and magnetic properties of SmFeAsO and SmFeAs(O0.93F0.07)|A. Martinelli,M. Ferretti,P. Manfrinetti,A. Palenzona,M. Tropeano,M. R. Cimberle,C. Ferdeghini,R. Valle,M. Putti,A. S. Siri###
(1164173, 1164176)
 SmFeAsO and the isostructural superconducting SmFeAs(O0.93F0.07) samples wereprepared.
Featurization terminated normally.
0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[217.0, 140, 'K', 3],[254.0, 140, 'K', 4]

SmFeAs(O0.93F0.07)
###Synthesis, crystal structure, microstructure, transport and magnetic properties of SmFeAsO and SmFeAs(O0.93F0.07)|A. Martinelli,M. Ferretti,P. Manfrinetti,A. Palenzona,M. Tropeano,M. R. Cimberle,C. Ferdeghini,R. Valle,M. Putti,A. S. Siri###
(1164186, 1164194)
 SmFeAsO and the isostructural superconducting SmFeAs(O0.93F0.07) samples wereprepared.
Featurization terminated normally.
0,0,0,0,0,0,0,0.2325,0.0175,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[199.0, 140, 'K', 3],[236.0, 140, 'K', 4]

Sm2O3
###Synthesis, crystal structure, microstructure, transport and magnetic properties of SmFeAsO and SmFeAs(O0.93F0.07)|A. Martinelli,M. Ferretti,P. Manfrinetti,A. Palenzona,M. Tropeano,M. R. Cimberle,C. Ferdeghini,R. Valle,M. Putti,A. S. Siri###
(1164318, 1164321)
 Sintering treatment strongly improves the grain connectivity, but,on the other hand, induces a competition between the thermodynamic stability ofthe oxy-pnictide and Sm2O3, hence worsening the purity of the sample.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 140, 'K', 1],[109.0, 140, 'K', 2]

In
###Synthesis, crystal structure, microstructure, transport and magnetic properties of SmFeAsO and SmFeAs(O0.93F0.07)|A. Martinelli,M. Ferretti,P. Manfrinetti,A. Palenzona,M. Tropeano,M. R. Cimberle,C. Ferdeghini,R. Valle,M. Putti,A. S. Siri###
(1164339, 1164339)
 In thepristine sample both magnetization and resistivity measurements clearlyindicate that two different sources of magnetism are present the formerrelated to Fe ordering at 140 K and the latter due to the Sm ions that ordersantiferromagnetically at low temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 140, 'K', 0],[91.0, 140, 'K', 1]

Fe
###Synthesis, crystal structure, microstructure, transport and magnetic properties of SmFeAsO and SmFeAs(O0.93F0.07)|A. Martinelli,M. Ferretti,P. Manfrinetti,A. Palenzona,M. Tropeano,M. R. Cimberle,C. Ferdeghini,R. Valle,M. Putti,A. S. Siri###
(1164388, 1164388)
 In thepristine sample both magnetization and resistivity measurements clearlyindicate that two different sources of magnetism are present the formerrelated to Fe ordering at 140 K and the latter due to the Sm ions that ordersantiferromagnetically at low temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 140, 'K', 0],[42.0, 140, 'K', 1]

Sm
###Synthesis, crystal structure, microstructure, transport and magnetic properties of SmFeAsO and SmFeAs(O0.93F0.07)|A. Martinelli,M. Ferretti,P. Manfrinetti,A. Palenzona,M. Tropeano,M. R. Cimberle,C. Ferdeghini,R. Valle,M. Putti,A. S. Siri###
(1164407, 1164407)
 In thepristine sample both magnetization and resistivity measurements clearlyindicate that two different sources of magnetism are present the formerrelated to Fe ordering at 140 K and the latter due to the Sm ions that ordersantiferromagnetically at low temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 140, 'K', 0],[23.0, 140, 'K', 1]

F
###Synthesis, crystal structure, microstructure, transport and magnetic properties of SmFeAsO and SmFeAs(O0.93F0.07)|A. Martinelli,M. Ferretti,P. Manfrinetti,A. Palenzona,M. Tropeano,M. R. Cimberle,C. Ferdeghini,R. Valle,M. Putti,A. S. Siri###
(1164439, 1164439)
 The feature at 140 K disappears inthe F-substituted sample and, at low temperatures a superconducting transitionappears.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 140, 'K', 1],[9.0, 140, 'K', 0]

F
###Synthesis, crystal structure, microstructure, transport and magnetic properties of SmFeAsO and SmFeAs(O0.93F0.07)|A. Martinelli,M. Ferretti,P. Manfrinetti,A. Palenzona,M. Tropeano,M. R. Cimberle,C. Ferdeghini,R. Valle,M. Putti,A. S. Siri###
(1164474, 1164474)
 The magnetoresistivity curves of the F-substituted sample probablyindicates very high critical field values.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 140, 'K', 2],[44.0, 140, 'K', 1]

(La0.4Pr0.6)1.2Sr1.8Mn2O7
###Effect of pressure on steplike magnetostriction of single crystalline (La$_{0.4}$Pr$_{0.6}$)$_{1.2}$Sr$_{1.8}$Mn$_{2}$O$_{7}$ bilayered manganite|Y. Yamato,M. Matsukawa,T. Kumagai,R. Suryanarayanan,S. Nimori,M. Apostu,A. Revcolevschi,K. Koyama,N. Kobayashi###
(1164522, 1164534)
Effect of pressure on steplike magnetostriction of single crystalline (La0.4Pr0.6)1.2Sr1.8Mn2O7 bilayered manganite.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.04,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(LaPr)1.2Sr1.8Mn2O8
###Effect of pressure on steplike magnetostriction of single crystalline (La$_{0.4}$Pr$_{0.6}$)$_{1.2}$Sr$_{1.8}$Mn$_{2}$O$_{7}$ bilayered manganite|Y. Yamato,M. Matsukawa,T. Kumagai,R. Suryanarayanan,S. Nimori,M. Apostu,A. Revcolevschi,K. Koyama,N. Kobayashi###
(1164572, 1164582)
 e<missing VAR> report the effect of pressure on the steplike magnetostriction of singlecrystalline bilayered manganite (LaPr)1.2Sr1.8Mn2O8, for our understandings ofthe ultrasharp nature of the field-induced first-order transition from aparamagnetic insulator to a ferromagnetic metal phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5633802816901409,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14084507042253522,0,0,0,0,0,0,0,0,0,0,0,0,0.1267605633802817,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08450704225352113,0,0.08450704225352113,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Effective Mass Ratio & positive colossal magnetoresistance of a Nano-wire|Piyush Dua###
(1164851, 1164851)
 In the present work, a relation has been established between degree ofpolarization and effective mass ratio (EMR) and magnetoresistance (MR) ofone-dimensional non-degenerate system (which can represent a nano-wire or alinear chain of atoms and molecules in one dimension) by using a non-degenerateHubbard model, which includes diagonal and off-diagonal matrix elements ofCoulomb interaction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SmFeAsO1-x
###Log-T divergence and Insulator-to-Metal Crossover in the normal state resistivity of fluorine doped SmFeAsO1-xFx|S. C. Riggs,J. B. Kemper,Y. Jo,Z. Stegen,L. Balicas,G. S. Boebinger,F. F. Balakirev,Albert Migliori,H. Chen,R. H. Liu,X. H. Chen###
(1165235, 1165241)
Log-T<missing VAR> divergence and Insulator-to-Metal Crossover in the normal state resistivity of fluorine doped SmFeAsO1-xFx.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[47.0, 60, 'T', 1],[162.0, 0.15, 'display', 4]

SmFeAsO1-x
###Log-T divergence and Insulator-to-Metal Crossover in the normal state resistivity of fluorine doped SmFeAsO1-xFx|S. C. Riggs,J. B. Kemper,Y. Jo,Z. Stegen,L. Balicas,G. S. Boebinger,F. F. Balakirev,Albert Migliori,H. Chen,R. H. Liu,X. H. Chen###
(1165265, 1165271)
 We report the resistivity of a series of fluorine-doped SmFeAsO1-xFxpolycrystalline superconductors in magnetic fields up to 60T.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[17.0, 60, 'T', 0],[132.0, 0.15, 'display', 3]

In
###Log-T divergence and Insulator-to-Metal Crossover in the normal state resistivity of fluorine doped SmFeAsO1-xFx|S. C. Riggs,J. B. Kemper,Y. Jo,Z. Stegen,L. Balicas,G. S. Boebinger,F. F. Balakirev,Albert Migliori,H. Chen,R. H. Liu,X. H. Chen###
(1165380, 1165380)
 In contrast, the normal state for samples with doping x<missing VAR>> 0.15 display metallic behavior with little magnetoresistance, where intensemagnetic fields broaden the superconducting transition rather than suppress Tc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 60, 'T', 3],[23.0, 0.15, 'display', 0]

Tc
###Log-T divergence and Insulator-to-Metal Crossover in the normal state resistivity of fluorine doped SmFeAsO1-xFx|S. C. Riggs,J. B. Kemper,Y. Jo,Z. Stegen,L. Balicas,G. S. Boebinger,F. F. Balakirev,Albert Migliori,H. Chen,R. H. Liu,X. H. Chen###
(1165439, 1165439)
 In contrast, the normal state for samples with doping x<missing VAR>> 0.15 display metallic behavior with little magnetoresistance, where intensemagnetic fields broaden the superconducting transition rather than suppress Tc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 60, 'T', 3],[36.0, 0.15, 'display', 0]

SP
###Log-T divergence and Insulator-to-Metal Crossover in the normal state resistivity of fluorine doped SmFeAsO1-xFx|S. C. Riggs,J. B. Kemper,Y. Jo,Z. Stegen,L. Balicas,G. S. Boebinger,F. F. Balakirev,Albert Migliori,H. Chen,R. H. Liu,X. H. Chen###
(1165481, 1165482)
The location of the insulator-to metal crossover coincides with the reportedsuppression of the structural phase transition (SPT)in the phase diagram forSmFeAsO1-xFx series.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[193.0, 60, 'T', 4],[78.0, 0.15, 'display', 1]

SmFeAsO1-x
###Log-T divergence and Insulator-to-Metal Crossover in the normal state resistivity of fluorine doped SmFeAsO1-xFx|S. C. Riggs,J. B. Kemper,Y. Jo,Z. Stegen,L. Balicas,G. S. Boebinger,F. F. Balakirev,Albert Migliori,H. Chen,R. H. Liu,X. H. Chen###
(1165496, 1165502)
The location of the insulator-to metal crossover coincides with the reportedsuppression of the structural phase transition (SPT)in the phase diagram forSmFeAsO1-xFx series.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[208.0, 60, 'T', 4],[93.0, 0.15, 'display', 1]

CsClO4
###Multiband Transport in Bilayer Graphene at High Carrier Densities|Dmitri K. Efetov,Patrick Maher,Simas Glinskis,Philip Kim###
(1165573, 1165576)
 Employing a poly(ethylene)oxide-CsClO4 solid polymer electrolytegate we demonstrate the filling of the high energy subbands in bilayer graphenesamples at carrier densities n<missing VAR>geq2.4times 1013 cm-2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Multiband Transport in Bilayer Graphene at High Carrier Densities|Dmitri K. Efetov,Patrick Maher,Simas Glinskis,Philip Kim###
(1165673, 1165673)
 We observe asudden increase of resistance and the onset of a second family of Shubnikov deHaas (SdH) oscillations as these high energy subbands are populated.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Multiband Transport in Bilayer Graphene at High Carrier Densities|Dmitri K. Efetov,Patrick Maher,Simas Glinskis,Philip Kim###
(1165711, 1165711)
 Fromsimultaneous Hall and magnetoresistance measurements together with SdHoscillations in the multiband conduction regime, we deduce the carrierdensities and mobilities for the higher energy bands separately and find themobilities to be at least a factor of two higher than those in the low energybands.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr2IrO4
###Lattice-Driven Magnetoresistivity and Metal-Insulator Transition in Single-Layered Iridates|M. Ge,T. F. Qi,O. B. Korneta,D. E. De Long,P. Schlottmann,W. P. Crummett,G. Cao###
(1165828, 1165832)
 Sr2IrO4 exhibits a novel insulating state driven by spin-orbit interactions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr2IrO4
###Lattice-Driven Magnetoresistivity and Metal-Insulator Transition in Single-Layered Iridates|M. Ge,T. F. Qi,O. B. Korneta,D. E. De Long,P. Schlottmann,W. P. Crummett,G. Cao###
(1165877, 1165881)
We report two novel phenomena, namely a large magnetoresistivity in Sr2IrO4that is extremely sensitive to the orientation of magnetic field but exhibitsno apparent correlation with the magnetization, and a robust metallic statethat is induced by dilute electron (La3) or hole (K) doping for Sr2 ions inSr2IrO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(La3)
###Lattice-Driven Magnetoresistivity and Metal-Insulator Transition in Single-Layered Iridates|M. Ge,T. F. Qi,O. B. Korneta,D. E. De Long,P. Schlottmann,W. P. Crummett,G. Cao###
(1165945, 1165948)
We report two novel phenomena, namely a large magnetoresistivity in Sr2IrO4that is extremely sensitive to the orientation of magnetic field but exhibitsno apparent correlation with the magnetization, and a robust metallic statethat is induced by dilute electron (La3) or hole (K) doping for Sr2 ions inSr2IrO4.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(K)
###Lattice-Driven Magnetoresistivity and Metal-Insulator Transition in Single-Layered Iridates|M. Ge,T. F. Qi,O. B. Korneta,D. E. De Long,P. Schlottmann,W. P. Crummett,G. Cao###
(1165954, 1165956)
We report two novel phenomena, namely a large magnetoresistivity in Sr2IrO4that is extremely sensitive to the orientation of magnetic field but exhibitsno apparent correlation with the magnetization, and a robust metallic statethat is induced by dilute electron (La3) or hole (K) doping for Sr2 ions inSr2IrO4.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr2
###Lattice-Driven Magnetoresistivity and Metal-Insulator Transition in Single-Layered Iridates|M. Ge,T. F. Qi,O. B. Korneta,D. E. De Long,P. Schlottmann,W. P. Crummett,G. Cao###
(1165962, 1165963)
We report two novel phenomena, namely a large magnetoresistivity in Sr2IrO4that is extremely sensitive to the orientation of magnetic field but exhibitsno apparent correlation with the magnetization, and a robust metallic statethat is induced by dilute electron (La3) or hole (K) doping for Sr2 ions inSr2IrO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr2IrO4
###Lattice-Driven Magnetoresistivity and Metal-Insulator Transition in Single-Layered Iridates|M. Ge,T. F. Qi,O. B. Korneta,D. E. De Long,P. Schlottmann,W. P. Crummett,G. Cao###
(1165970, 1165974)
We report two novel phenomena, namely a large magnetoresistivity in Sr2IrO4that is extremely sensitive to the orientation of magnetic field but exhibitsno apparent correlation with the magnetization, and a robust metallic statethat is induced by dilute electron (La3) or hole (K) doping for Sr2 ions inSr2IrO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ir
###Lattice-Driven Magnetoresistivity and Metal-Insulator Transition in Single-Layered Iridates|M. Ge,T. F. Qi,O. B. Korneta,D. E. De Long,P. Schlottmann,W. P. Crummett,G. Cao###
(1166074, 1166074)
 Our structural, transport and magnetic data reveal that a strongspin-orbit interaction alters the balance between the competing energies soprofoundly that (1) the spin degree of freedom alone is no longer a dominantforce; (2) underlying transport properties delicately hinge on the Ir-O-Ir bondangle via a strong magnetoelastic coupling; and (3) a highly insulating statein Sr2IrO4 is proximate to a metallic state, and the transition is governed bylattice distortions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Lattice-Driven Magnetoresistivity and Metal-Insulator Transition in Single-Layered Iridates|M. Ge,T. F. Qi,O. B. Korneta,D. E. De Long,P. Schlottmann,W. P. Crummett,G. Cao###
(1166076, 1166076)
 Our structural, transport and magnetic data reveal that a strongspin-orbit interaction alters the balance between the competing energies soprofoundly that (1) the spin degree of freedom alone is no longer a dominantforce; (2) underlying transport properties delicately hinge on the Ir-O-Ir bondangle via a strong magnetoelastic coupling; and (3) a highly insulating statein Sr2IrO4 is proximate to a metallic state, and the transition is governed bylattice distortions.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ir
###Lattice-Driven Magnetoresistivity and Metal-Insulator Transition in Single-Layered Iridates|M. Ge,T. F. Qi,O. B. Korneta,D. E. De Long,P. Schlottmann,W. P. Crummett,G. Cao###
(1166078, 1166078)
 Our structural, transport and magnetic data reveal that a strongspin-orbit interaction alters the balance between the competing energies soprofoundly that (1) the spin degree of freedom alone is no longer a dominantforce; (2) underlying transport properties delicately hinge on the Ir-O-Ir bondangle via a strong magnetoelastic coupling; and (3) a highly insulating statein Sr2IrO4 is proximate to a metallic state, and the transition is governed bylattice distortions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr2IrO4
###Lattice-Driven Magnetoresistivity and Metal-Insulator Transition in Single-Layered Iridates|M. Ge,T. F. Qi,O. B. Korneta,D. E. De Long,P. Schlottmann,W. P. Crummett,G. Cao###
(1166113, 1166117)
 Our structural, transport and magnetic data reveal that a strongspin-orbit interaction alters the balance between the competing energies soprofoundly that (1) the spin degree of freedom alone is no longer a dominantforce; (2) underlying transport properties delicately hinge on the Ir-O-Ir bondangle via a strong magnetoelastic coupling; and (3) a highly insulating statein Sr2IrO4 is proximate to a metallic state, and the transition is governed bylattice distortions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(Bi2Se3)
###Observation of the superconducting proximity effect and possible evidence for Pearl vortices in a candidate topological insulator|Duming Zhang,Jian Wang,Ashley M. DaSilva,Joon Sue Lee,Humberto R. Gutierrez,Moses H. W. Chan,Jainendra Jain,Nitin Samarth###
(1166262, 1166267)
 We report the observation of the superconducting proximity effect innanoribbons of a candidate topological insulator (Bi2Se3) which is interfacedwith superconducting (tungsten) contacts.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PdBi
###Magnetic and transport properties of rare-earth-based half-Heusler phases RPdBi: prospective systems for topological quantum phenomena|K. Gofryk,D. Kaczorowski,T. Plackowski,A. Leithe-Jasper,Yu. Grin###
(1166535, 1166536)
Magnetic and transport properties of rare-earth-based half-Heusler phases R<missing VAR>PdBi prospective systems for topological quantum phenomena.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 12, 'T', 1],[334.0, 6, 'to', 6]

PdBi
###Magnetic and transport properties of rare-earth-based half-Heusler phases RPdBi: prospective systems for topological quantum phenomena|K. Gofryk,D. Kaczorowski,T. Plackowski,A. Leithe-Jasper,Yu. Grin###
(1166552, 1166553)
 R<missing VAR>PdBi (R<missing VAR>  Er, Ho, Gd, Dy, Y, Nd) compounds were studied by means of x<missing VAR>-raydiffraction, magnetic susceptibility, electrical resistivity,magnetoresistivity, thermoelectric power and Hall effect measurements,performed in the temperature range 1.5-300 K and in magnetic fields up to 12 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 12, 'T', 0],[317.0, 6, 'to', 5]

Er
###Magnetic and transport properties of rare-earth-based half-Heusler phases RPdBi: prospective systems for topological quantum phenomena|K. Gofryk,D. Kaczorowski,T. Plackowski,A. Leithe-Jasper,Yu. Grin###
(1166559, 1166559)
 R<missing VAR>PdBi (R<missing VAR>  Er, Ho, Gd, Dy, Y, Nd) compounds were studied by means of x<missing VAR>-raydiffraction, magnetic susceptibility, electrical resistivity,magnetoresistivity, thermoelectric power and Hall effect measurements,performed in the temperature range 1.5-300 K and in magnetic fields up to 12 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 12, 'T', 0],[311.0, 6, 'to', 5]

Ho
###Magnetic and transport properties of rare-earth-based half-Heusler phases RPdBi: prospective systems for topological quantum phenomena|K. Gofryk,D. Kaczorowski,T. Plackowski,A. Leithe-Jasper,Yu. Grin###
(1166562, 1166562)
 R<missing VAR>PdBi (R<missing VAR>  Er, Ho, Gd, Dy, Y, Nd) compounds were studied by means of x<missing VAR>-raydiffraction, magnetic susceptibility, electrical resistivity,magnetoresistivity, thermoelectric power and Hall effect measurements,performed in the temperature range 1.5-300 K and in magnetic fields up to 12 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 12, 'T', 0],[308.0, 6, 'to', 5]

Gd
###Magnetic and transport properties of rare-earth-based half-Heusler phases RPdBi: prospective systems for topological quantum phenomena|K. Gofryk,D. Kaczorowski,T. Plackowski,A. Leithe-Jasper,Yu. Grin###
(1166565, 1166565)
 R<missing VAR>PdBi (R<missing VAR>  Er, Ho, Gd, Dy, Y, Nd) compounds were studied by means of x<missing VAR>-raydiffraction, magnetic susceptibility, electrical resistivity,magnetoresistivity, thermoelectric power and Hall effect measurements,performed in the temperature range 1.5-300 K and in magnetic fields up to 12 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 12, 'T', 0],[305.0, 6, 'to', 5]

Dy
###Magnetic and transport properties of rare-earth-based half-Heusler phases RPdBi: prospective systems for topological quantum phenomena|K. Gofryk,D. Kaczorowski,T. Plackowski,A. Leithe-Jasper,Yu. Grin###
(1166568, 1166568)
 R<missing VAR>PdBi (R<missing VAR>  Er, Ho, Gd, Dy, Y, Nd) compounds were studied by means of x<missing VAR>-raydiffraction, magnetic susceptibility, electrical resistivity,magnetoresistivity, thermoelectric power and Hall effect measurements,performed in the temperature range 1.5-300 K and in magnetic fields up to 12 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 12, 'T', 0],[302.0, 6, 'to', 5]

Y
###Magnetic and transport properties of rare-earth-based half-Heusler phases RPdBi: prospective systems for topological quantum phenomena|K. Gofryk,D. Kaczorowski,T. Plackowski,A. Leithe-Jasper,Yu. Grin###
(1166571, 1166571)
 R<missing VAR>PdBi (R<missing VAR>  Er, Ho, Gd, Dy, Y, Nd) compounds were studied by means of x<missing VAR>-raydiffraction, magnetic susceptibility, electrical resistivity,magnetoresistivity, thermoelectric power and Hall effect measurements,performed in the temperature range 1.5-300 K and in magnetic fields up to 12 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 12, 'T', 0],[299.0, 6, 'to', 5]

Nd
###Magnetic and transport properties of rare-earth-based half-Heusler phases RPdBi: prospective systems for topological quantum phenomena|K. Gofryk,D. Kaczorowski,T. Plackowski,A. Leithe-Jasper,Yu. Grin###
(1166574, 1166574)
 R<missing VAR>PdBi (R<missing VAR>  Er, Ho, Gd, Dy, Y, Nd) compounds were studied by means of x<missing VAR>-raydiffraction, magnetic susceptibility, electrical resistivity,magnetoresistivity, thermoelectric power and Hall effect measurements,performed in the temperature range 1.5-300 K and in magnetic fields up to 12 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 12, 'T', 0],[296.0, 6, 'to', 5]

K
###Magnetic and transport properties of rare-earth-based half-Heusler phases RPdBi: prospective systems for topological quantum phenomena|K. Gofryk,D. Kaczorowski,T. Plackowski,A. Leithe-Jasper,Yu. Grin###
(1166639, 1166639)
 R<missing VAR>PdBi (R<missing VAR>  Er, Ho, Gd, Dy, Y, Nd) compounds were studied by means of x<missing VAR>-raydiffraction, magnetic susceptibility, electrical resistivity,magnetoresistivity, thermoelectric power and Hall effect measurements,performed in the temperature range 1.5-300 K and in magnetic fields up to 12 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 12, 'T', 0],[231.0, 6, 'to', 5]

YPdBi
###Magnetic and transport properties of rare-earth-based half-Heusler phases RPdBi: prospective systems for topological quantum phenomena|K. Gofryk,D. Kaczorowski,T. Plackowski,A. Leithe-Jasper,Yu. Grin###
(1166665, 1166667)
These ternaries, except diamagnetic YPdBi, exhibit localized magnetism ofR<missing VAR>3 ions, and order antiferromagnetically at low temperatures (T<missing VAR>N 2-13 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 12, 'T', 1],[203.0, 6, 'to', 4]

N
###Magnetic and transport properties of rare-earth-based half-Heusler phases RPdBi: prospective systems for topological quantum phenomena|K. Gofryk,D. Kaczorowski,T. Plackowski,A. Leithe-Jasper,Yu. Grin###
(1166699, 1166699)
These ternaries, except diamagnetic YPdBi, exhibit localized magnetism ofR<missing VAR>3 ions, and order antiferromagnetically at low temperatures (T<missing VAR>N 2-13 K).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 12, 'T', 1],[171.0, 6, 'to', 4]

K
###Magnetic and transport properties of rare-earth-based half-Heusler phases RPdBi: prospective systems for topological quantum phenomena|K. Gofryk,D. Kaczorowski,T. Plackowski,A. Leithe-Jasper,Yu. Grin###
(1166707, 1166707)
These ternaries, except diamagnetic YPdBi, exhibit localized magnetism ofR<missing VAR>3 ions, and order antiferromagnetically at low temperatures (T<missing VAR>N 2-13 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 12, 'T', 1],[163.0, 6, 'to', 4]

ErPdBi
###Magnetic and transport properties of rare-earth-based half-Heusler phases RPdBi: prospective systems for topological quantum phenomena|K. Gofryk,D. Kaczorowski,T. Plackowski,A. Leithe-Jasper,Yu. Grin###
(1166779, 1166781)
 The Hall effect ofErPdBi is strongly temperature and magnetic field dependent, reflecting complexcharacter of the underlying electronic structures with multiple electron andhole bands.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 12, 'T', 4],[89.0, 6, 'to', 1]

PdBi
###Magnetic and transport properties of rare-earth-based half-Heusler phases RPdBi: prospective systems for topological quantum phenomena|K. Gofryk,D. Kaczorowski,T. Plackowski,A. Leithe-Jasper,Yu. Grin###
(1166830, 1166831)
 R<missing VAR>PdBi, and especially DyPdBi, exhibit very good thermoelectricproperties with a power factor coefficient PF ranging from 6 to 20muWcm-1K-2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 12, 'T', 5],[39.0, 6, 'to', 0]

DyPdBi
###Magnetic and transport properties of rare-earth-based half-Heusler phases RPdBi: prospective systems for topological quantum phenomena|K. Gofryk,D. Kaczorowski,T. Plackowski,A. Leithe-Jasper,Yu. Grin###
(1166838, 1166840)
 R<missing VAR>PdBi, and especially DyPdBi, exhibit very good thermoelectricproperties with a power factor coefficient PF ranging from 6 to 20muWcm-1K-2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, 12, 'T', 5],[30.0, 6, 'to', 0]

PF
###Magnetic and transport properties of rare-earth-based half-Heusler phases RPdBi: prospective systems for topological quantum phenomena|K. Gofryk,D. Kaczorowski,T. Plackowski,A. Leithe-Jasper,Yu. Grin###
(1166864, 1166865)
 R<missing VAR>PdBi, and especially DyPdBi, exhibit very good thermoelectricproperties with a power factor coefficient PF ranging from 6 to 20muWcm-1K-2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[212.0, 12, 'T', 5],[5.0, 6, 'to', 0]

K
###Magnetic and transport properties of rare-earth-based half-Heusler phases RPdBi: prospective systems for topological quantum phenomena|K. Gofryk,D. Kaczorowski,T. Plackowski,A. Leithe-Jasper,Yu. Grin###
(1166879, 1166879)
 R<missing VAR>PdBi, and especially DyPdBi, exhibit very good thermoelectricproperties with a power factor coefficient PF ranging from 6 to 20muWcm-1K-2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[227.0, 12, 'T', 5],[9.0, 6, 'to', 0]

I
###Enhancement of the retrapping current of superconducting microbridges of finite length|D. Y. Vodolazov,F. M. Peeters###
(1166950, 1166950)
 We theoretically find that the resistance of a superconductingmicrobridge/nanowire it decreases while the retrapping current Ir<missing VAR> for thetransition to the superconducting state it increases when one suppresses themagnitude of the order parameter Delta in the attached superconductingleads.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Enhancement of the retrapping current of superconducting microbridges of finite length|D. Y. Vodolazov,F. M. Peeters###
(1167161, 1167161)
 Anonmonotonous dependence of Ir<missing VAR> on the length of the microbridge ispredicted.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BaRuO3
###Magnetotransport properties of BaRuO$_3$: Observation of two scattering rates|Y. A. Ying,Y. Liu,T. He,R. J. Cava###
(1167257, 1167260)
Magnetotransport properties of BaRuO3 Observation of two scattering rates.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 4, 'H', 2],[140.0, 1.8, 'K', 2],[152.0, 9, 'R', 3],[185.0, 150, 'K', 3],[219.0, 9, 'R', 4],[244.0, 4, 'H', 4],[274.0, 9, 'R', 5],[281.0, 4, 'H', 5]

H
###Magnetotransport properties of BaRuO$_3$: Observation of two scattering rates|Y. A. Ying,Y. Liu,T. He,R. J. Cava###
(1167310, 1167310)
 We report results of low-temperature magnetotransport and Hall measurementson single crystals of four-layered hexagonal (4H) and nine-layered rhombohedral(9R) BaRuO3 that provide insight into the structure-property relationshipsof BaRuO3 polymorphs.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 4, 'H', 1],[90.0, 1.8, 'K', 1],[102.0, 9, 'R', 2],[135.0, 150, 'K', 2],[169.0, 9, 'R', 3],[194.0, 4, 'H', 3],[224.0, 9, 'R', 4],[231.0, 4, 'H', 4]

BaRuO3
###Magnetotransport properties of BaRuO$_3$: Observation of two scattering rates|Y. A. Ying,Y. Liu,T. He,R. J. Cava###
(1167327, 1167330)
 We report results of low-temperature magnetotransport and Hall measurementson single crystals of four-layered hexagonal (4H) and nine-layered rhombohedral(9R) BaRuO3 that provide insight into the structure-property relationshipsof BaRuO3 polymorphs.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 4, 'H', 1],[70.0, 1.8, 'K', 1],[82.0, 9, 'R', 2],[115.0, 150, 'K', 2],[149.0, 9, 'R', 3],[174.0, 4, 'H', 3],[204.0, 9, 'R', 4],[211.0, 4, 'H', 4]

BaRuO3
###Magnetotransport properties of BaRuO$_3$: Observation of two scattering rates|Y. A. Ying,Y. Liu,T. He,R. J. Cava###
(1167351, 1167354)
 We report results of low-temperature magnetotransport and Hall measurementson single crystals of four-layered hexagonal (4H) and nine-layered rhombohedral(9R) BaRuO3 that provide insight into the structure-property relationshipsof BaRuO3 polymorphs.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 4, 'H', 1],[46.0, 1.8, 'K', 1],[58.0, 9, 'R', 2],[91.0, 150, 'K', 2],[125.0, 9, 'R', 3],[150.0, 4, 'H', 3],[180.0, 9, 'R', 4],[187.0, 4, 'H', 4]

BaRuO3
###Magnetotransport properties of BaRuO$_3$: Observation of two scattering rates|Y. A. Ying,Y. Liu,T. He,R. J. Cava###
(1167366, 1167369)
 We found that 4H BaRuO3 possesses Fermi-liquidbehavior down to the lowest temperature (T) of our measurements, 1.8 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 4, 'H', 0],[31.0, 1.8, 'K', 0],[43.0, 9, 'R', 1],[76.0, 150, 'K', 1],[110.0, 9, 'R', 2],[135.0, 4, 'H', 2],[165.0, 9, 'R', 3],[172.0, 4, 'H', 3]

BaRuO3
###Magnetotransport properties of BaRuO$_3$: Observation of two scattering rates|Y. A. Ying,Y. Liu,T. He,R. J. Cava###
(1167414, 1167417)
 Onthe other hand, 9R BaRuO3 was found to show a crossover in the temperaturedependence of resistivity around 150 K, and the existence of two separatescattering rates at low temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 4, 'H', 1],[14.0, 1.8, 'K', 1],[2.0, 9, 'R', 0],[28.0, 150, 'K', 0],[62.0, 9, 'R', 1],[87.0, 4, 'H', 1],[117.0, 9, 'R', 2],[124.0, 4, 'H', 2]

BaRuO3
###Magnetotransport properties of BaRuO$_3$: Observation of two scattering rates|Y. A. Ying,Y. Liu,T. He,R. J. Cava###
(1167481, 1167484)
 The magnetoresistance in the 9R BaRuO3was found to be negative while that in the 4H BaRuO3 is positive.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 4, 'H', 2],[81.0, 1.8, 'K', 2],[69.0, 9, 'R', 1],[36.0, 150, 'K', 1],[2.0, 9, 'R', 0],[20.0, 4, 'H', 0],[50.0, 9, 'R', 1],[57.0, 4, 'H', 1]

BaRuO3
###Magnetotransport properties of BaRuO$_3$: Observation of two scattering rates|Y. A. Ying,Y. Liu,T. He,R. J. Cava###
(1167506, 1167509)
 The magnetoresistance in the 9R BaRuO3was found to be negative while that in the 4H BaRuO3 is positive.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 4, 'H', 2],[106.0, 1.8, 'K', 2],[94.0, 9, 'R', 1],[61.0, 150, 'K', 1],[27.0, 9, 'R', 0],[2.0, 4, 'H', 0],[25.0, 9, 'R', 1],[32.0, 4, 'H', 1]

BaRuO3
###Magnetotransport properties of BaRuO$_3$: Observation of two scattering rates|Y. A. Ying,Y. Liu,T. He,R. J. Cava###
(1167543, 1167546)
 We proposethat local moments may be present in 9R but not in 4H BaRuO3, which leads todistinctly different behavior in the two forms.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 4, 'H', 3],[143.0, 1.8, 'K', 3],[131.0, 9, 'R', 2],[98.0, 150, 'K', 2],[64.0, 9, 'R', 1],[39.0, 4, 'H', 1],[9.0, 9, 'R', 0],[2.0, 4, 'H', 0]

At
###Quantum Hall Effect, Screening and Layer-Polarized Insulating States in Twisted Bilayer Graphene|Javier D. Sanchez-Yamagishi,Thiti Taychatanapat,Kenji Watanabe,Takashi Taniguchi,Amir Yacoby,Pablo Jarillo-Herrero###
(1167797, 1167797)
 At zero fillingfactor, we observe magnetic and displacement field dependent insulating states,which indicate the presence of counter-propagating edge states with inter-layercoupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Manifestation of electron-electron interaction in the magnetoresistance of graphene|Johannes Jobst,Daniel Waldmann,Igor V. Gornyi,Alexander D. Mirlin,Heiko B. Weber###
(1167916, 1167916)
 In the intermediate field regime betweenweak localization and Landau quantization the observed temperature-dependentparabolic magnetoresistivity (MR) is a manifestation of the electron-electroninteraction (EEI).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[209.0, 7, 'to', 3]

I
###Manifestation of electron-electron interaction in the magnetoresistance of graphene|Johannes Jobst,Daniel Waldmann,Igor V. Gornyi,Alexander D. Mirlin,Heiko B. Weber###
(1167977, 1167977)
 In the intermediate field regime betweenweak localization and Landau quantization the observed temperature-dependentparabolic magnetoresistivity (MR) is a manifestation of the electron-electroninteraction (EEI).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 7, 'to', 3]

I
###Manifestation of electron-electron interaction in the magnetoresistance of graphene|Johannes Jobst,Daniel Waldmann,Igor V. Gornyi,Alexander D. Mirlin,Heiko B. Weber###
(1168074, 1168074)
 We find an excellent agreementbetween the experimentally observed temperature dependence of MR and the theoryof EEI in the diffusive regime.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 7, 'to', 1]

I
###Manifestation of electron-electron interaction in the magnetoresistance of graphene|Johannes Jobst,Daniel Waldmann,Igor V. Gornyi,Alexander D. Mirlin,Heiko B. Weber###
(1168122, 1168122)
 We can further assign a temperature-drivencrossover to the reduction of the multiplet modes contributing to EEI from 7 to3 due to intervalley scattering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 7, 'to', 0]

In
###Manifestation of electron-electron interaction in the magnetoresistance of graphene|Johannes Jobst,Daniel Waldmann,Igor V. Gornyi,Alexander D. Mirlin,Heiko B. Weber###
(1168139, 1168139)
 In addition, we find a temperature independentballistic contribution to the MR in classically strong magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 7, 'to', 1]

In
###Tunnel magnetoresistance in magnetic tunnel junctions with embedded nanoparticles|Arthur Useinov,Niazbeck Useinov,Lin-Xiu Ye,Te-Ho Wu,Chih-Huang Lai###
(1168204, 1168204)
 In this paper, we attempt the theoretical modeling of the magnetic tunneljunctions with embedded magnetic and nonmagnetic nanoparticles (NPs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Tunnel magnetoresistance in magnetic tunnel junctions with embedded nanoparticles|Arthur Useinov,Niazbeck Useinov,Lin-Xiu Ye,Te-Ho Wu,Chih-Huang Lai###
(1168245, 1168245)
 In this paper, we attempt the theoretical modeling of the magnetic tunneljunctions with embedded magnetic and nonmagnetic nanoparticles (NPs).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NP
###Tunnel magnetoresistance in magnetic tunnel junctions with embedded nanoparticles|Arthur Useinov,Niazbeck Useinov,Lin-Xiu Ye,Te-Ho Wu,Chih-Huang Lai###
(1168351, 1168352)
 A fewabnormal tunnel magnetoresistance (TMR) effects, observed in relatedexperiments, can be easily simulated within our model we found, that thesuppressed TMR magnitudes and the TMR sign-reversing effect at small voltagesare related to the electron momentum states of the NP located inside theinsulating layer.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NP
###Tunnel magnetoresistance in magnetic tunnel junctions with embedded nanoparticles|Arthur Useinov,Niazbeck Useinov,Lin-Xiu Ye,Te-Ho Wu,Chih-Huang Lai###
(1168394, 1168395)
 All these TMR behaviors can be explained within the tunnelingmodel, where NP is simulated as a quantum well (Q<missing VAR>W).
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Tunnel magnetoresistance in magnetic tunnel junctions with embedded nanoparticles|Arthur Useinov,Niazbeck Useinov,Lin-Xiu Ye,Te-Ho Wu,Chih-Huang Lai###
(1168411, 1168411)
 All these TMR behaviors can be explained within the tunnelingmodel, where NP is simulated as a quantum well (Q<missing VAR>W).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Tunnel magnetoresistance in magnetic tunnel junctions with embedded nanoparticles|Arthur Useinov,Niazbeck Useinov,Lin-Xiu Ye,Te-Ho Wu,Chih-Huang Lai###
(1168492, 1168492)
 The originof the TMR suppression is the quantized angle transparency for spin polarizedelectrons being in one of the lowest Q<missing VAR>W states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###High Sensitivity Biosensor using Injection Locked Spin Torque Nano-Oscillators|Tathagata Srimani,Bibhas Manna,Anand Kumar Mukhopadhyay,Kaushik Roy,Mrigank Sharad###
(1168609, 1168609)
 In the field of biosensing specifically Spin Valve sensorscoupled with Magnetic Nanolabels is showing great promise due to noise immunityand energy efficiency [1].
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 20, 'such', 2]

In
###High Sensitivity Biosensor using Injection Locked Spin Torque Nano-Oscillators|Tathagata Srimani,Bibhas Manna,Anand Kumar Mukhopadhyay,Kaushik Roy,Mrigank Sharad###
(1168664, 1168664)
 In this paper we present the application ofinjection locked based Spin Torque Nano Oscillator (ST<missing VAR>NO) suitable for highresolution energy efficient labeled D<missing VAR>NA Detection.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 20, 'such', 1]

S
###High Sensitivity Biosensor using Injection Locked Spin Torque Nano-Oscillators|Tathagata Srimani,Bibhas Manna,Anand Kumar Mukhopadhyay,Kaushik Roy,Mrigank Sharad###
(1168696, 1168696)
 In this paper we present the application ofinjection locked based Spin Torque Nano Oscillator (ST<missing VAR>NO) suitable for highresolution energy efficient labeled D<missing VAR>NA Detection.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 20, 'such', 1]

O
###High Sensitivity Biosensor using Injection Locked Spin Torque Nano-Oscillators|Tathagata Srimani,Bibhas Manna,Anand Kumar Mukhopadhyay,Kaushik Roy,Mrigank Sharad###
(1168699, 1168699)
 In this paper we present the application ofinjection locked based Spin Torque Nano Oscillator (ST<missing VAR>NO) suitable for highresolution energy efficient labeled D<missing VAR>NA Detection.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 20, 'such', 1]

N
###High Sensitivity Biosensor using Injection Locked Spin Torque Nano-Oscillators|Tathagata Srimani,Bibhas Manna,Anand Kumar Mukhopadhyay,Kaushik Roy,Mrigank Sharad###
(1168718, 1168718)
 In this paper we present the application ofinjection locked based Spin Torque Nano Oscillator (ST<missing VAR>NO) suitable for highresolution energy efficient labeled D<missing VAR>NA Detection.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 20, 'such', 1]

S
###High Sensitivity Biosensor using Injection Locked Spin Torque Nano-Oscillators|Tathagata Srimani,Bibhas Manna,Anand Kumar Mukhopadhyay,Kaushik Roy,Mrigank Sharad###
(1168728, 1168728)
 The proposed ST<missing VAR>NO microarrayconsists of 20 such devices oscillating at different frequencies making itpossible to multiplex all the signals using capacitive coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 20, 'such', 0]

NO
###High Sensitivity Biosensor using Injection Locked Spin Torque Nano-Oscillators|Tathagata Srimani,Bibhas Manna,Anand Kumar Mukhopadhyay,Kaushik Roy,Mrigank Sharad###
(1168730, 1168731)
 The proposed ST<missing VAR>NO microarrayconsists of 20 such devices oscillating at different frequencies making itpossible to multiplex all the signals using capacitive coupling.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 20, 'such', 0]

O
###Spintronics of Organometal Trihalide Perovskites|Dali Sun,Chuang Zhang,Marzieh Kavand,Kipp J. van Schooten,Hans Malissa,Matthew Groesbeck,Ryan McLaughlin,Christoph Boehme,Z. Valy Vardeny###
(1168875, 1168875)
 The family of organometal trihalide perovskite (OT<missing VAR>P), CH3NH3PbX<missing VAR>3 (where X<missing VAR> ishalogen) has recently revolutionized the photovoltaics field and shows promisein a variety of optoelectronic applications.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Spintronics of Organometal Trihalide Perovskites|Dali Sun,Chuang Zhang,Marzieh Kavand,Kipp J. van Schooten,Hans Malissa,Matthew Groesbeck,Ryan McLaughlin,Christoph Boehme,Z. Valy Vardeny###
(1168877, 1168877)
 The family of organometal trihalide perovskite (OT<missing VAR>P), CH3NH3PbX<missing VAR>3 (where X<missing VAR> ishalogen) has recently revolutionized the photovoltaics field and shows promisein a variety of optoelectronic applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CH3NH3Pb
###Spintronics of Organometal Trihalide Perovskites|Dali Sun,Chuang Zhang,Marzieh Kavand,Kipp J. van Schooten,Hans Malissa,Matthew Groesbeck,Ryan McLaughlin,Christoph Boehme,Z. Valy Vardeny###
(1168881, 1168887)
 The family of organometal trihalide perovskite (OT<missing VAR>P), CH3NH3PbX<missing VAR>3 (where X<missing VAR> ishalogen) has recently revolutionized the photovoltaics field and shows promisein a variety of optoelectronic applications.
Featurization terminated normally.
0.6666666666666666,0,0,0,0,0.1111111111111111,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Spintronics of Organometal Trihalide Perovskites|Dali Sun,Chuang Zhang,Marzieh Kavand,Kipp J. van Schooten,Hans Malissa,Matthew Groesbeck,Ryan McLaughlin,Christoph Boehme,Z. Valy Vardeny###
(1168955, 1168955)
 The characteristic spin propertiesof charge and neutral excitations in OT<missing VAR>Ps are influenced by the largespin-orbit coupling of the Pb atoms, which may lead to spin-based deviceapplications.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pb
###Spintronics of Organometal Trihalide Perovskites|Dali Sun,Chuang Zhang,Marzieh Kavand,Kipp J. van Schooten,Hans Malissa,Matthew Groesbeck,Ryan McLaughlin,Christoph Boehme,Z. Valy Vardeny###
(1168980, 1168980)
 The characteristic spin propertiesof charge and neutral excitations in OT<missing VAR>Ps are influenced by the largespin-orbit coupling of the Pb atoms, which may lead to spin-based deviceapplications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Spintronics of Organometal Trihalide Perovskites|Dali Sun,Chuang Zhang,Marzieh Kavand,Kipp J. van Schooten,Hans Malissa,Matthew Groesbeck,Ryan McLaughlin,Christoph Boehme,Z. Valy Vardeny###
(1169036, 1169036)
 Here we report the first studies of pure spin-current andspin-aligned carrier injection in OT<missing VAR>P spintronics devices using spin-pumpingand spin-injection, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Spintronics of Organometal Trihalide Perovskites|Dali Sun,Chuang Zhang,Marzieh Kavand,Kipp J. van Schooten,Hans Malissa,Matthew Groesbeck,Ryan McLaughlin,Christoph Boehme,Z. Valy Vardeny###
(1169038, 1169038)
 Here we report the first studies of pure spin-current andspin-aligned carrier injection in OT<missing VAR>P spintronics devices using spin-pumpingand spin-injection, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Spintronics of Organometal Trihalide Perovskites|Dali Sun,Chuang Zhang,Marzieh Kavand,Kipp J. van Schooten,Hans Malissa,Matthew Groesbeck,Ryan McLaughlin,Christoph Boehme,Z. Valy Vardeny###
(1169090, 1169090)
 We measure a relatively largeinverse-spin-Hall effect using pulsed microwave excitation in OT<missing VAR>P devices atresonance with a ferromagnetic substrate, from which we derive room temperaturespin diffusion length, lambdasd9nm; and low-temperature giantmagnetoresistance in OT<missing VAR>P-based spin-valves from which we estimatelambdasd85nm.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Spintronics of Organometal Trihalide Perovskites|Dali Sun,Chuang Zhang,Marzieh Kavand,Kipp J. van Schooten,Hans Malissa,Matthew Groesbeck,Ryan McLaughlin,Christoph Boehme,Z. Valy Vardeny###
(1169092, 1169092)
 We measure a relatively largeinverse-spin-Hall effect using pulsed microwave excitation in OT<missing VAR>P devices atresonance with a ferromagnetic substrate, from which we derive room temperaturespin diffusion length, lambdasd9nm; and low-temperature giantmagnetoresistance in OT<missing VAR>P-based spin-valves from which we estimatelambdasd85nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Spintronics of Organometal Trihalide Perovskites|Dali Sun,Chuang Zhang,Marzieh Kavand,Kipp J. van Schooten,Hans Malissa,Matthew Groesbeck,Ryan McLaughlin,Christoph Boehme,Z. Valy Vardeny###
(1169149, 1169149)
 We measure a relatively largeinverse-spin-Hall effect using pulsed microwave excitation in OT<missing VAR>P devices atresonance with a ferromagnetic substrate, from which we derive room temperaturespin diffusion length, lambdasd9nm; and low-temperature giantmagnetoresistance in OT<missing VAR>P-based spin-valves from which we estimatelambdasd85nm.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Spintronics of Organometal Trihalide Perovskites|Dali Sun,Chuang Zhang,Marzieh Kavand,Kipp J. van Schooten,Hans Malissa,Matthew Groesbeck,Ryan McLaughlin,Christoph Boehme,Z. Valy Vardeny###
(1169151, 1169151)
 We measure a relatively largeinverse-spin-Hall effect using pulsed microwave excitation in OT<missing VAR>P devices atresonance with a ferromagnetic substrate, from which we derive room temperaturespin diffusion length, lambdasd9nm; and low-temperature giantmagnetoresistance in OT<missing VAR>P-based spin-valves from which we estimatelambdasd85nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeS
###Upper critical field and quantum oscillations in tetragonal superconducting FeS|Taichi Terashima,Naoki Kikugawa,Hai Lin,Xiyu Zhu,Hai-Hu Wen,Takuya Nomoto,Katsuhiro Suzuki,Hiroaki Ikeda,Shinya Uji###
(1169200, 1169201)
Upper critical field and quantum oscillations in tetragonal superconducting FeS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 18, 'T', 1],[47.0, 0.03, 'K', 1],[70.0, 4.1, 'K', 2],[142.0, 2.2, 'and', 3],[143.0, 0.36, 'T', 3],[190.0, 0.15, 'and', 5],[191.0, 0.2, 'kT', 5],[262.0, 0.48, 'mJ', 6]

FeS
###Upper critical field and quantum oscillations in tetragonal superconducting FeS|Taichi Terashima,Naoki Kikugawa,Hai Lin,Xiyu Zhu,Hai-Hu Wen,Takuya Nomoto,Katsuhiro Suzuki,Hiroaki Ikeda,Shinya Uji###
(1169216, 1169217)
 The magnetoresistance and magnetic torque of FeS are measured in magneticfields B of up to 18 T down to a temperature of 0.03 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 18, 'T', 0],[31.0, 0.03, 'K', 0],[54.0, 4.1, 'K', 1],[126.0, 2.2, 'and', 2],[127.0, 0.36, 'T', 2],[174.0, 0.15, 'and', 4],[175.0, 0.2, 'kT', 4],[246.0, 0.48, 'mJ', 5]

B
###Upper critical field and quantum oscillations in tetragonal superconducting FeS|Taichi Terashima,Naoki Kikugawa,Hai Lin,Xiyu Zhu,Hai-Hu Wen,Takuya Nomoto,Katsuhiro Suzuki,Hiroaki Ikeda,Shinya Uji###
(1169230, 1169230)
 The magnetoresistance and magnetic torque of FeS are measured in magneticfields B of up to 18 T down to a temperature of 0.03 K.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 18, 'T', 0],[18.0, 0.03, 'K', 0],[41.0, 4.1, 'K', 1],[113.0, 2.2, 'and', 2],[114.0, 0.36, 'T', 2],[161.0, 0.15, 'and', 4],[162.0, 0.2, 'kT', 4],[233.0, 0.48, 'mJ', 5]

B
###Upper critical field and quantum oscillations in tetragonal superconducting FeS|Taichi Terashima,Naoki Kikugawa,Hai Lin,Xiyu Zhu,Hai-Hu Wen,Takuya Nomoto,Katsuhiro Suzuki,Hiroaki Ikeda,Shinya Uji###
(1169293, 1169293)
 The superconductingtransition temperature is found to be Tc  4.1 K, and the anisotropy ratioof the upper critical field Bc<missing VAR>2 at Tc is estimated from the initialslopes to be Gamma(Tc)  6.9.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 18, 'T', 1],[45.0, 0.03, 'K', 1],[22.0, 4.1, 'K', 0],[50.0, 2.2, 'and', 1],[51.0, 0.36, 'T', 1],[98.0, 0.15, 'and', 3],[99.0, 0.2, 'kT', 3],[170.0, 0.48, 'mJ', 4]

B
###Upper critical field and quantum oscillations in tetragonal superconducting FeS|Taichi Terashima,Naoki Kikugawa,Hai Lin,Xiyu Zhu,Hai-Hu Wen,Takuya Nomoto,Katsuhiro Suzuki,Hiroaki Ikeda,Shinya Uji###
(1169329, 1169329)
 Bc<missing VAR>2(0) is estimated to be 2.2 and 0.36 Tfor B parallel ab and c<missing VAR>, respectively.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 18, 'T', 2],[81.0, 0.03, 'K', 2],[58.0, 4.1, 'K', 1],[14.0, 2.2, 'and', 0],[15.0, 0.36, 'T', 0],[62.0, 0.15, 'and', 2],[63.0, 0.2, 'kT', 2],[134.0, 0.48, 'mJ', 3]

B
###Upper critical field and quantum oscillations in tetragonal superconducting FeS|Taichi Terashima,Naoki Kikugawa,Hai Lin,Xiyu Zhu,Hai-Hu Wen,Takuya Nomoto,Katsuhiro Suzuki,Hiroaki Ikeda,Shinya Uji###
(1169349, 1169349)
 Bc<missing VAR>2(0) is estimated to be 2.2 and 0.36 Tfor B parallel ab and c<missing VAR>, respectively.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 18, 'T', 2],[101.0, 0.03, 'K', 2],[78.0, 4.1, 'K', 1],[6.0, 2.2, 'and', 0],[5.0, 0.36, 'T', 0],[42.0, 0.15, 'and', 2],[43.0, 0.2, 'kT', 2],[114.0, 0.48, 'mJ', 3]

F
###Upper critical field and quantum oscillations in tetragonal superconducting FeS|Taichi Terashima,Naoki Kikugawa,Hai Lin,Xiyu Zhu,Hai-Hu Wen,Takuya Nomoto,Katsuhiro Suzuki,Hiroaki Ikeda,Shinya Uji###
(1169389, 1169389)
 Two frequencies F  0.15 and 0.20 kT areresolved and assigned to a quasi-two-dimensional Fermi surface cylinder.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 18, 'T', 4],[141.0, 0.03, 'K', 4],[118.0, 4.1, 'K', 3],[46.0, 2.2, 'and', 2],[45.0, 0.36, 'T', 2],[2.0, 0.15, 'and', 0],[3.0, 0.2, 'kT', 0],[74.0, 0.48, 'mJ', 1]

Fe
###Upper critical field and quantum oscillations in tetragonal superconducting FeS|Taichi Terashima,Naoki Kikugawa,Hai Lin,Xiyu Zhu,Hai-Hu Wen,Takuya Nomoto,Katsuhiro Suzuki,Hiroaki Ikeda,Shinya Uji###
(1169460, 1169460)
 Thecarrier density and Sommerfeld coefficient associated with this cylinder areestimated to be 5.8 times 10-3 carriers/Fe and 0.48 mJ/(K2mol),respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[223.0, 18, 'T', 5],[212.0, 0.03, 'K', 5],[189.0, 4.1, 'K', 4],[117.0, 2.2, 'and', 3],[116.0, 0.36, 'T', 3],[69.0, 0.15, 'and', 1],[68.0, 0.2, 'kT', 1],[3.0, 0.48, 'mJ', 0]

K2
###Upper critical field and quantum oscillations in tetragonal superconducting FeS|Taichi Terashima,Naoki Kikugawa,Hai Lin,Xiyu Zhu,Hai-Hu Wen,Takuya Nomoto,Katsuhiro Suzuki,Hiroaki Ikeda,Shinya Uji###
(1169466, 1169467)
 Thecarrier density and Sommerfeld coefficient associated with this cylinder areestimated to be 5.8 times 10-3 carriers/Fe and 0.48 mJ/(K2mol),respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[229.0, 18, 'T', 5],[218.0, 0.03, 'K', 5],[195.0, 4.1, 'K', 4],[123.0, 2.2, 'and', 3],[122.0, 0.36, 'T', 3],[75.0, 0.15, 'and', 1],[74.0, 0.2, 'kT', 1],[3.0, 0.48, 'mJ', 0]

B
###Shubnikov-de Haas oscillations and electronic correlations in the layered organic metal $κ$-(BETS)$_2$Mn[N(CN)$_2$]$_3$|M. V. Kartsovnik,V. N. Zverev,W. Biberacher,S. V. Simonov,I. Sheikin,N. D. Kushch,E. B. Yagubskii###
(1169554, 1169554)
Shubnikov-de Haas oscillations and electronic correlations in the layered organic metal -(BETS)2Mn[N(CN)2]3.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 1.4, ',', 2],[177.0, 10, ',', 2]

S
###Shubnikov-de Haas oscillations and electronic correlations in the layered organic metal $κ$-(BETS)$_2$Mn[N(CN)$_2$]$_3$|M. V. Kartsovnik,V. N. Zverev,W. Biberacher,S. V. Simonov,I. Sheikin,N. D. Kushch,E. B. Yagubskii###
(1169557, 1169557)
Shubnikov-de Haas oscillations and electronic correlations in the layered organic metal -(BETS)2Mn[N(CN)2]3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 1.4, ',', 2],[174.0, 10, ',', 2]

Mn[N(CN)2]3
###Shubnikov-de Haas oscillations and electronic correlations in the layered organic metal $κ$-(BETS)$_2$Mn[N(CN)$_2$]$_3$|M. V. Kartsovnik,V. N. Zverev,W. Biberacher,S. V. Simonov,I. Sheikin,N. D. Kushch,E. B. Yagubskii###
(1169560, 1169569)
Shubnikov-de Haas oscillations and electronic correlations in the layered organic metal -(BETS)2Mn[N(CN)2]3.
EXCEPTION 1: Square brackets detected! Chemical formula was modified to: Mn(N(CN)2)3
0,0,0,0,0,0.375,0.5625,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.0625,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 1.4, ',', 2],[162.0, 10, ',', 2]

B
###Shubnikov-de Haas oscillations and electronic correlations in the layered organic metal $κ$-(BETS)$_2$Mn[N(CN)$_2$]$_3$|M. V. Kartsovnik,V. N. Zverev,W. Biberacher,S. V. Simonov,I. Sheikin,N. D. Kushch,E. B. Yagubskii###
(1169598, 1169598)
 We present magnetoresistance studies of the quasi-two-dimensional organicconductor kappa-(BETS)2Mn[N(CN)2]3, where BETS stands forbis-(ethylene-dithio)-tetra-selena-fulvalene.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 1.4, ',', 1],[133.0, 10, ',', 1]

S
###Shubnikov-de Haas oscillations and electronic correlations in the layered organic metal $κ$-(BETS)$_2$Mn[N(CN)$_2$]$_3$|M. V. Kartsovnik,V. N. Zverev,W. Biberacher,S. V. Simonov,I. Sheikin,N. D. Kushch,E. B. Yagubskii###
(1169601, 1169601)
 We present magnetoresistance studies of the quasi-two-dimensional organicconductor kappa-(BETS)2Mn[N(CN)2]3, where BETS stands forbis-(ethylene-dithio)-tetra-selena-fulvalene.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 1.4, ',', 1],[130.0, 10, ',', 1]

Mn[N(CN)2]3
###Shubnikov-de Haas oscillations and electronic correlations in the layered organic metal $κ$-(BETS)$_2$Mn[N(CN)$_2$]$_3$|M. V. Kartsovnik,V. N. Zverev,W. Biberacher,S. V. Simonov,I. Sheikin,N. D. Kushch,E. B. Yagubskii###
(1169604, 1169613)
 We present magnetoresistance studies of the quasi-two-dimensional organicconductor kappa-(BETS)2Mn[N(CN)2]3, where BETS stands forbis-(ethylene-dithio)-tetra-selena-fulvalene.
EXCEPTION 1: Square brackets detected! Chemical formula was modified to: Mn(N(CN)2)3
0,0,0,0,0,0.375,0.5625,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.0625,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 1.4, ',', 1],[118.0, 10, ',', 1]

B
###Shubnikov-de Haas oscillations and electronic correlations in the layered organic metal $κ$-(BETS)$_2$Mn[N(CN)$_2$]$_3$|M. V. Kartsovnik,V. N. Zverev,W. Biberacher,S. V. Simonov,I. Sheikin,N. D. Kushch,E. B. Yagubskii###
(1169618, 1169618)
 We present magnetoresistance studies of the quasi-two-dimensional organicconductor kappa-(BETS)2Mn[N(CN)2]3, where BETS stands forbis-(ethylene-dithio)-tetra-selena-fulvalene.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 1.4, ',', 1],[113.0, 10, ',', 1]

S
###Shubnikov-de Haas oscillations and electronic correlations in the layered organic metal $κ$-(BETS)$_2$Mn[N(CN)$_2$]$_3$|M. V. Kartsovnik,V. N. Zverev,W. Biberacher,S. V. Simonov,I. Sheikin,N. D. Kushch,E. B. Yagubskii###
(1169621, 1169621)
 We present magnetoresistance studies of the quasi-two-dimensional organicconductor kappa-(BETS)2Mn[N(CN)2]3, where BETS stands forbis-(ethylene-dithio)-tetra-selena-fulvalene.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 1.4, ',', 1],[110.0, 10, ',', 1]

(WTe2)
###Determination of the thickness and orientation of few-layer tungsten ditelluride using polarized Raman spectroscopy|Minjung Kim,Songhee Han,Jung Hwa Kim,Jae-Ung Lee,Zonghoon Lee,Hyeonsik Cheong###
(1169900, 1169904)
 Orthorhombic tungsten ditelluride (WTe2), with a distorted 1T structure,exhibits a large magnetoresistance that depends on the orientation, and itselectrical characteristics changes rom semimetallic to insulating as thethickness decreases.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 1, 'T', 0],[187.0, -1, ',', 3]

WTe2
###Determination of the thickness and orientation of few-layer tungsten ditelluride using polarized Raman spectroscopy|Minjung Kim,Songhee Han,Jung Hwa Kim,Jae-Ung Lee,Zonghoon Lee,Hyeonsik Cheong###
(1170019, 1170021)
 Through polarized Raman spectroscopy in combination withtransmission electron diffraction, we establish a reliable method to determinethe thickness and crystallographic orientation of few-layer WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 1, 'T', 1],[70.0, -1, ',', 2]

MnGe
###Electric transport in three-dimensional Skyrmion/monopole crystal|Xiao-Xiao Zhang,Andrey S. Mishchenko,Giulio De Filippis,Naoto Nagaosa###
(1170360, 1170361)
 This spin structureis proposed for MnGe based on the neutron scattering experiment as well as theLorentz transmission electron microscopy observation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnGe
###Electric transport in three-dimensional Skyrmion/monopole crystal|Xiao-Xiao Zhang,Andrey S. Mishchenko,Giulio De Filippis,Naoto Nagaosa###
(1170568, 1170569)
 We study in detail the behavior of electricresistivity under the influence of temperature, external magnetic field and acharacteristic monopole motion, especially a novel magnetoresistivity effectdescribing the latest experimental observations in MnGe, wherein a topologicalphase transition signifying strong correlation is identified.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Emptying Dirac valleys in bismuth using high magnetic fields|Zengwei Zhu,Jinhua Wang,Huakun Zuo,Benoît Fauqué,Ross D. McDonald,Yuki Fuseya,Kamran Behnia###
(1170782, 1170782)
 Above this field, Brmempty, one or two valleys becometotally empty.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Emptying Dirac valleys in bismuth using high magnetic fields|Zengwei Zhu,Jinhua Wang,Huakun Zuo,Benoît Fauqué,Ross D. McDonald,Yuki Fuseya,Kamran Behnia###
(1170868, 1170868)
 We trace the origin ofthe large drop in magnetoresistance across Brmempty to transfer ofcarriers between valleys with highly anisotropic mobilities.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Te2
###Raman scattering in transition metal dichalcogenides MTe2 (M = Mo, W)|Xiaoli Ma,Pengjie Guo,Changjing Yi,Qiaohe Yu,Anmin Zhang,Jianting Ji,Yong Tian,Feng Jin,YiyYan Wang,Kai Liu,Tianlong Xia,Youguo Shi,Qingming Zhang###
(1170967, 1170968)
Raman scattering in transition metal dichalcogenides M<missing VAR>Te2 (M<missing VAR>  Mo, W).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[206.0, 1, 'T', 4],[273.0, 12, 'Raman', 4]

Mo
###Raman scattering in transition metal dichalcogenides MTe2 (M = Mo, W)|Xiaoli Ma,Pengjie Guo,Changjing Yi,Qiaohe Yu,Anmin Zhang,Jianting Ji,Yong Tian,Feng Jin,YiyYan Wang,Kai Liu,Tianlong Xia,Youguo Shi,Qingming Zhang###
(1170974, 1170974)
Raman scattering in transition metal dichalcogenides M<missing VAR>Te2 (M<missing VAR>  Mo, W).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[200.0, 1, 'T', 4],[267.0, 12, 'Raman', 4]

W
###Raman scattering in transition metal dichalcogenides MTe2 (M = Mo, W)|Xiaoli Ma,Pengjie Guo,Changjing Yi,Qiaohe Yu,Anmin Zhang,Jianting Ji,Yong Tian,Feng Jin,YiyYan Wang,Kai Liu,Tianlong Xia,Youguo Shi,Qingming Zhang###
(1170977, 1170977)
Raman scattering in transition metal dichalcogenides M<missing VAR>Te2 (M<missing VAR>  Mo, W).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[197.0, 1, 'T', 4],[264.0, 12, 'Raman', 4]

MoTe2
###Raman scattering in transition metal dichalcogenides MTe2 (M = Mo, W)|Xiaoli Ma,Pengjie Guo,Changjing Yi,Qiaohe Yu,Anmin Zhang,Jianting Ji,Yong Tian,Feng Jin,YiyYan Wang,Kai Liu,Tianlong Xia,Youguo Shi,Qingming Zhang###
(1170997, 1170999)
 We performed comparable polarized Raman scattering studies of MoTe2 and WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 1, 'T', 3],[242.0, 12, 'Raman', 3]

WTe2
###Raman scattering in transition metal dichalcogenides MTe2 (M = Mo, W)|Xiaoli Ma,Pengjie Guo,Changjing Yi,Qiaohe Yu,Anmin Zhang,Jianting Ji,Yong Tian,Feng Jin,YiyYan Wang,Kai Liu,Tianlong Xia,Youguo Shi,Qingming Zhang###
(1171003, 1171005)
 We performed comparable polarized Raman scattering studies of MoTe2 and WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 1, 'T', 3],[236.0, 12, 'Raman', 3]

Ag5
###Raman scattering in transition metal dichalcogenides MTe2 (M = Mo, W)|Xiaoli Ma,Pengjie Guo,Changjing Yi,Qiaohe Yu,Anmin Zhang,Jianting Ji,Yong Tian,Feng Jin,YiyYan Wang,Kai Liu,Tianlong Xia,Youguo Shi,Qingming Zhang###
(1171160, 1171161)
 Fifteen Raman-active phononmodes (10Ag5Bg) in the high-symmetry phase 1T-MoTe2 (300 K) were wellassigned, and all the symmetry-allowed Raman modes (11A16A2) in thelow-symmetry phase Td-MoTe2 (10 K) and 12 Raman phonons (8A14A2) in Td-WTe2were observed and identified.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 1, 'T', 0],[80.0, 12, 'Raman', 0]

MoTe2
###Raman scattering in transition metal dichalcogenides MTe2 (M = Mo, W)|Xiaoli Ma,Pengjie Guo,Changjing Yi,Qiaohe Yu,Anmin Zhang,Jianting Ji,Yong Tian,Feng Jin,YiyYan Wang,Kai Liu,Tianlong Xia,Youguo Shi,Qingming Zhang###
(1171176, 1171178)
 Fifteen Raman-active phononmodes (10Ag5Bg) in the high-symmetry phase 1T-MoTe2 (300 K) were wellassigned, and all the symmetry-allowed Raman modes (11A16A2) in thelow-symmetry phase Td-MoTe2 (10 K) and 12 Raman phonons (8A14A2) in Td-WTe2were observed and identified.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 1, 'T', 0],[63.0, 12, 'Raman', 0]

K
###Raman scattering in transition metal dichalcogenides MTe2 (M = Mo, W)|Xiaoli Ma,Pengjie Guo,Changjing Yi,Qiaohe Yu,Anmin Zhang,Jianting Ji,Yong Tian,Feng Jin,YiyYan Wang,Kai Liu,Tianlong Xia,Youguo Shi,Qingming Zhang###
(1171183, 1171183)
 Fifteen Raman-active phononmodes (10Ag5Bg) in the high-symmetry phase 1T-MoTe2 (300 K) were wellassigned, and all the symmetry-allowed Raman modes (11A16A2) in thelow-symmetry phase Td-MoTe2 (10 K) and 12 Raman phonons (8A14A2) in Td-WTe2were observed and identified.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 1, 'T', 0],[58.0, 12, 'Raman', 0]

MoTe2
###Raman scattering in transition metal dichalcogenides MTe2 (M = Mo, W)|Xiaoli Ma,Pengjie Guo,Changjing Yi,Qiaohe Yu,Anmin Zhang,Jianting Ji,Yong Tian,Feng Jin,YiyYan Wang,Kai Liu,Tianlong Xia,Youguo Shi,Qingming Zhang###
(1171230, 1171232)
 Fifteen Raman-active phononmodes (10Ag5Bg) in the high-symmetry phase 1T-MoTe2 (300 K) were wellassigned, and all the symmetry-allowed Raman modes (11A16A2) in thelow-symmetry phase Td-MoTe2 (10 K) and 12 Raman phonons (8A14A2) in Td-WTe2were observed and identified.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 1, 'T', 0],[9.0, 12, 'Raman', 0]

K
###Raman scattering in transition metal dichalcogenides MTe2 (M = Mo, W)|Xiaoli Ma,Pengjie Guo,Changjing Yi,Qiaohe Yu,Anmin Zhang,Jianting Ji,Yong Tian,Feng Jin,YiyYan Wang,Kai Liu,Tianlong Xia,Youguo Shi,Qingming Zhang###
(1171237, 1171237)
 Fifteen Raman-active phononmodes (10Ag5Bg) in the high-symmetry phase 1T-MoTe2 (300 K) were wellassigned, and all the symmetry-allowed Raman modes (11A16A2) in thelow-symmetry phase Td-MoTe2 (10 K) and 12 Raman phonons (8A14A2) in Td-WTe2were observed and identified.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 1, 'T', 0],[4.0, 12, 'Raman', 0]

WTe2
###Raman scattering in transition metal dichalcogenides MTe2 (M = Mo, W)|Xiaoli Ma,Pengjie Guo,Changjing Yi,Qiaohe Yu,Anmin Zhang,Jianting Ji,Yong Tian,Feng Jin,YiyYan Wang,Kai Liu,Tianlong Xia,Youguo Shi,Qingming Zhang###
(1171258, 1171260)
 Fifteen Raman-active phononmodes (10Ag5Bg) in the high-symmetry phase 1T-MoTe2 (300 K) were wellassigned, and all the symmetry-allowed Raman modes (11A16A2) in thelow-symmetry phase Td-MoTe2 (10 K) and 12 Raman phonons (8A14A2) in Td-WTe2were observed and identified.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 1, 'T', 0],[17.0, 12, 'Raman', 0]

In
###In-plane anisotropic magnetoresistance in antiferromagnetic Ba(Fe$_{1-x}$Co$_x$)$_2$As$_2$, (Ba$_{1-x}$K$_x$)Fe$_2$As$_2$ and Ba(Fe$_{1-x}$Ru$_x$)$_2$As$_2$|Gerald Derondeau,Ján Minár,Sebastian Wimmer,Hubert Ebert###
(1171353, 1171353)
In-plane anisotropic magnetoresistance in antiferromagnetic Ba(Fe1-xCox)2As2, (Ba1-xKx)Fe2As2 and Ba(Fe1-xRux)2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ba
###In-plane anisotropic magnetoresistance in antiferromagnetic Ba(Fe$_{1-x}$Co$_x$)$_2$As$_2$, (Ba$_{1-x}$K$_x$)Fe$_2$As$_2$ and Ba(Fe$_{1-x}$Ru$_x$)$_2$As$_2$|Gerald Derondeau,Ján Minár,Sebastian Wimmer,Hubert Ebert###
(1171365, 1171365)
In-plane anisotropic magnetoresistance in antiferromagnetic Ba(Fe1-xCox)2As2, (Ba1-xKx)Fe2As2 and Ba(Fe1-xRux)2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe1-xCo
###In-plane anisotropic magnetoresistance in antiferromagnetic Ba(Fe$_{1-x}$Co$_x$)$_2$As$_2$, (Ba$_{1-x}$K$_x$)Fe$_2$As$_2$ and Ba(Fe$_{1-x}$Ru$_x$)$_2$As$_2$|Gerald Derondeau,Ján Minár,Sebastian Wimmer,Hubert Ebert###
(1171367, 1171371)
In-plane anisotropic magnetoresistance in antiferromagnetic Ba(Fe1-xCox)2As2, (Ba1-xKx)Fe2As2 and Ba(Fe1-xRux)2As2.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

As2
###In-plane anisotropic magnetoresistance in antiferromagnetic Ba(Fe$_{1-x}$Co$_x$)$_2$As$_2$, (Ba$_{1-x}$K$_x$)Fe$_2$As$_2$ and Ba(Fe$_{1-x}$Ru$_x$)$_2$As$_2$|Gerald Derondeau,Ján Minár,Sebastian Wimmer,Hubert Ebert###
(1171375, 1171376)
In-plane anisotropic magnetoresistance in antiferromagnetic Ba(Fe1-xCox)2As2, (Ba1-xKx)Fe2As2 and Ba(Fe1-xRux)2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ba1-xK
###In-plane anisotropic magnetoresistance in antiferromagnetic Ba(Fe$_{1-x}$Co$_x$)$_2$As$_2$, (Ba$_{1-x}$K$_x$)Fe$_2$As$_2$ and Ba(Fe$_{1-x}$Ru$_x$)$_2$As$_2$|Gerald Derondeau,Ján Minár,Sebastian Wimmer,Hubert Ebert###
(1171380, 1171384)
In-plane anisotropic magnetoresistance in antiferromagnetic Ba(Fe1-xCox)2As2, (Ba1-xKx)Fe2As2 and Ba(Fe1-xRux)2As2.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

Fe2As2
###In-plane anisotropic magnetoresistance in antiferromagnetic Ba(Fe$_{1-x}$Co$_x$)$_2$As$_2$, (Ba$_{1-x}$K$_x$)Fe$_2$As$_2$ and Ba(Fe$_{1-x}$Ru$_x$)$_2$As$_2$|Gerald Derondeau,Ján Minár,Sebastian Wimmer,Hubert Ebert###
(1171387, 1171390)
In-plane anisotropic magnetoresistance in antiferromagnetic Ba(Fe1-xCox)2As2, (Ba1-xKx)Fe2As2 and Ba(Fe1-xRux)2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ba
###In-plane anisotropic magnetoresistance in antiferromagnetic Ba(Fe$_{1-x}$Co$_x$)$_2$As$_2$, (Ba$_{1-x}$K$_x$)Fe$_2$As$_2$ and Ba(Fe$_{1-x}$Ru$_x$)$_2$As$_2$|Gerald Derondeau,Ján Minár,Sebastian Wimmer,Hubert Ebert###
(1171394, 1171394)
In-plane anisotropic magnetoresistance in antiferromagnetic Ba(Fe1-xCox)2As2, (Ba1-xKx)Fe2As2 and Ba(Fe1-xRux)2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe1-xRu
###In-plane anisotropic magnetoresistance in antiferromagnetic Ba(Fe$_{1-x}$Co$_x$)$_2$As$_2$, (Ba$_{1-x}$K$_x$)Fe$_2$As$_2$ and Ba(Fe$_{1-x}$Ru$_x$)$_2$As$_2$|Gerald Derondeau,Ján Minár,Sebastian Wimmer,Hubert Ebert###
(1171396, 1171400)
In-plane anisotropic magnetoresistance in antiferromagnetic Ba(Fe1-xCox)2As2, (Ba1-xKx)Fe2As2 and Ba(Fe1-xRux)2As2.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

As2
###In-plane anisotropic magnetoresistance in antiferromagnetic Ba(Fe$_{1-x}$Co$_x$)$_2$As$_2$, (Ba$_{1-x}$K$_x$)Fe$_2$As$_2$ and Ba(Fe$_{1-x}$Ru$_x$)$_2$As$_2$|Gerald Derondeau,Ján Minár,Sebastian Wimmer,Hubert Ebert###
(1171404, 1171405)
In-plane anisotropic magnetoresistance in antiferromagnetic Ba(Fe1-xCox)2As2, (Ba1-xKx)Fe2As2 and Ba(Fe1-xRux)2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ba
###In-plane anisotropic magnetoresistance in antiferromagnetic Ba(Fe$_{1-x}$Co$_x$)$_2$As$_2$, (Ba$_{1-x}$K$_x$)Fe$_2$As$_2$ and Ba(Fe$_{1-x}$Ru$_x$)$_2$As$_2$|Gerald Derondeau,Ján Minár,Sebastian Wimmer,Hubert Ebert###
(1171431, 1171431)
 Using the Kubo-Greenwood formalism the resistivity anisotropy for electrondoped Ba(Fe1-xCox)2As2, hole doped (Ba1-xKx)Fe2As2and isovalently doped Ba(Fe1-xRux)2As2 in their antiferromagneticstate has been calculated in order to clarify the origin of this importantphenomenon.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe1-xCo
###In-plane anisotropic magnetoresistance in antiferromagnetic Ba(Fe$_{1-x}$Co$_x$)$_2$As$_2$, (Ba$_{1-x}$K$_x$)Fe$_2$As$_2$ and Ba(Fe$_{1-x}$Ru$_x$)$_2$As$_2$|Gerald Derondeau,Ján Minár,Sebastian Wimmer,Hubert Ebert###
(1171433, 1171437)
 Using the Kubo-Greenwood formalism the resistivity anisotropy for electrondoped Ba(Fe1-xCox)2As2, hole doped (Ba1-xKx)Fe2As2and isovalently doped Ba(Fe1-xRux)2As2 in their antiferromagneticstate has been calculated in order to clarify the origin of this importantphenomenon.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

As2
###In-plane anisotropic magnetoresistance in antiferromagnetic Ba(Fe$_{1-x}$Co$_x$)$_2$As$_2$, (Ba$_{1-x}$K$_x$)Fe$_2$As$_2$ and Ba(Fe$_{1-x}$Ru$_x$)$_2$As$_2$|Gerald Derondeau,Ján Minár,Sebastian Wimmer,Hubert Ebert###
(1171441, 1171442)
 Using the Kubo-Greenwood formalism the resistivity anisotropy for electrondoped Ba(Fe1-xCox)2As2, hole doped (Ba1-xKx)Fe2As2and isovalently doped Ba(Fe1-xRux)2As2 in their antiferromagneticstate has been calculated in order to clarify the origin of this importantphenomenon.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ba1-xK
###In-plane anisotropic magnetoresistance in antiferromagnetic Ba(Fe$_{1-x}$Co$_x$)$_2$As$_2$, (Ba$_{1-x}$K$_x$)Fe$_2$As$_2$ and Ba(Fe$_{1-x}$Ru$_x$)$_2$As$_2$|Gerald Derondeau,Ján Minár,Sebastian Wimmer,Hubert Ebert###
(1171450, 1171454)
 Using the Kubo-Greenwood formalism the resistivity anisotropy for electrondoped Ba(Fe1-xCox)2As2, hole doped (Ba1-xKx)Fe2As2and isovalently doped Ba(Fe1-xRux)2As2 in their antiferromagneticstate has been calculated in order to clarify the origin of this importantphenomenon.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

Fe2As2
###In-plane anisotropic magnetoresistance in antiferromagnetic Ba(Fe$_{1-x}$Co$_x$)$_2$As$_2$, (Ba$_{1-x}$K$_x$)Fe$_2$As$_2$ and Ba(Fe$_{1-x}$Ru$_x$)$_2$As$_2$|Gerald Derondeau,Ján Minár,Sebastian Wimmer,Hubert Ebert###
(1171457, 1171460)
 Using the Kubo-Greenwood formalism the resistivity anisotropy for electrondoped Ba(Fe1-xCox)2As2, hole doped (Ba1-xKx)Fe2As2and isovalently doped Ba(Fe1-xRux)2As2 in their antiferromagneticstate has been calculated in order to clarify the origin of this importantphenomenon.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ba
###In-plane anisotropic magnetoresistance in antiferromagnetic Ba(Fe$_{1-x}$Co$_x$)$_2$As$_2$, (Ba$_{1-x}$K$_x$)Fe$_2$As$_2$ and Ba(Fe$_{1-x}$Ru$_x$)$_2$As$_2$|Gerald Derondeau,Ján Minár,Sebastian Wimmer,Hubert Ebert###
(1171469, 1171469)
 Using the Kubo-Greenwood formalism the resistivity anisotropy for electrondoped Ba(Fe1-xCox)2As2, hole doped (Ba1-xKx)Fe2As2and isovalently doped Ba(Fe1-xRux)2As2 in their antiferromagneticstate has been calculated in order to clarify the origin of this importantphenomenon.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe1-xRu
###In-plane anisotropic magnetoresistance in antiferromagnetic Ba(Fe$_{1-x}$Co$_x$)$_2$As$_2$, (Ba$_{1-x}$K$_x$)Fe$_2$As$_2$ and Ba(Fe$_{1-x}$Ru$_x$)$_2$As$_2$|Gerald Derondeau,Ján Minár,Sebastian Wimmer,Hubert Ebert###
(1171471, 1171475)
 Using the Kubo-Greenwood formalism the resistivity anisotropy for electrondoped Ba(Fe1-xCox)2As2, hole doped (Ba1-xKx)Fe2As2and isovalently doped Ba(Fe1-xRux)2As2 in their antiferromagneticstate has been calculated in order to clarify the origin of this importantphenomenon.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

As2
###In-plane anisotropic magnetoresistance in antiferromagnetic Ba(Fe$_{1-x}$Co$_x$)$_2$As$_2$, (Ba$_{1-x}$K$_x$)Fe$_2$As$_2$ and Ba(Fe$_{1-x}$Ru$_x$)$_2$As$_2$|Gerald Derondeau,Ján Minár,Sebastian Wimmer,Hubert Ebert###
(1171479, 1171480)
 Using the Kubo-Greenwood formalism the resistivity anisotropy for electrondoped Ba(Fe1-xCox)2As2, hole doped (Ba1-xKx)Fe2As2and isovalently doped Ba(Fe1-xRux)2As2 in their antiferromagneticstate has been calculated in order to clarify the origin of this importantphenomenon.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BN
###Bias induced up to 100% spin-injection and detection polarizations in ferromagnet/bilayer-hBN/graphene/hBN heterostructures|Mallikarjuna Gurram,Siddhartha Omar,Bart J. van Wees###
(1171775, 1171776)
Bias induced up to 100% spin-injection and detection polarizations in ferromagnet/bilayer-h<missing VAR>BN/graphene/h<missing VAR>BN heterostructures.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 100, '%', 0],[141.0, 50, '%', 3],[146.0, 135, '%', 3],[184.0, -70, '%', 3],[189.0, -60, '%', 3],[203.0, -0.4, 'V', 3],[298.0, 2.7, '%', 5]

BN
###Bias induced up to 100% spin-injection and detection polarizations in ferromagnet/bilayer-hBN/graphene/hBN heterostructures|Mallikarjuna Gurram,Siddhartha Omar,Bart J. van Wees###
(1171781, 1171782)
Bias induced up to 100% spin-injection and detection polarizations in ferromagnet/bilayer-h<missing VAR>BN/graphene/h<missing VAR>BN heterostructures.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 100, '%', 0],[135.0, 50, '%', 3],[140.0, 135, '%', 3],[178.0, -70, '%', 3],[183.0, -60, '%', 3],[197.0, -0.4, 'V', 3],[292.0, 2.7, '%', 5]

BN
###Bias induced up to 100% spin-injection and detection polarizations in ferromagnet/bilayer-hBN/graphene/hBN heterostructures|Mallikarjuna Gurram,Siddhartha Omar,Bart J. van Wees###
(1171802, 1171803)
 We study spin transport in a fully h<missing VAR>BN encapsulated monolayer-graphene vander Waals (vdW) heterostructure, at room temperature.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 100, '%', 1],[114.0, 50, '%', 2],[119.0, 135, '%', 2],[157.0, -70, '%', 2],[162.0, -60, '%', 2],[176.0, -0.4, 'V', 2],[271.0, 2.7, '%', 4]

W
###Bias induced up to 100% spin-injection and detection polarizations in ferromagnet/bilayer-hBN/graphene/hBN heterostructures|Mallikarjuna Gurram,Siddhartha Omar,Bart J. van Wees###
(1171820, 1171820)
 We study spin transport in a fully h<missing VAR>BN encapsulated monolayer-graphene vander Waals (vdW) heterostructure, at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 100, '%', 1],[97.0, 50, '%', 2],[102.0, 135, '%', 2],[140.0, -70, '%', 2],[145.0, -60, '%', 2],[159.0, -0.4, 'V', 2],[254.0, 2.7, '%', 4]

BN
###Bias induced up to 100% spin-injection and detection polarizations in ferromagnet/bilayer-hBN/graphene/hBN heterostructures|Mallikarjuna Gurram,Siddhartha Omar,Bart J. van Wees###
(1171845, 1171846)
 A top-layer ofbilayer-h<missing VAR>BN is used as a tunnel barrier for spin-injection and detection ingraphene with ferromagnetic cobalt electrodes.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 100, '%', 2],[71.0, 50, '%', 1],[76.0, 135, '%', 1],[114.0, -70, '%', 1],[119.0, -60, '%', 1],[133.0, -0.4, 'V', 1],[228.0, 2.7, '%', 3]

V
###Bias induced up to 100% spin-injection and detection polarizations in ferromagnet/bilayer-hBN/graphene/hBN heterostructures|Mallikarjuna Gurram,Siddhartha Omar,Bart J. van Wees###
(1171940, 1171940)
 We report surprisingly large andbias induced (differential) spin-injection (detection) polarizations up to 50%(135%) at a positive voltage bias of 0.6 V, as well as sign invertedpolarizations up to -70% (-60%) at a reverse bias of -0.4 V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[185.0, 100, '%', 3],[23.0, 50, '%', 0],[18.0, 135, '%', 0],[20.0, -70, '%', 0],[25.0, -60, '%', 0],[39.0, -0.4, 'V', 0],[134.0, 2.7, '%', 2]

BN
###Bias induced up to 100% spin-injection and detection polarizations in ferromagnet/bilayer-hBN/graphene/hBN heterostructures|Mallikarjuna Gurram,Siddhartha Omar,Bart J. van Wees###
(1171996, 1171997)
 This demonstratesthe potential of bilayer-h<missing VAR>BN tunnel barriers for practical graphene spintronicsapplications.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[241.0, 100, '%', 4],[79.0, 50, '%', 1],[74.0, 135, '%', 1],[36.0, -70, '%', 1],[31.0, -60, '%', 1],[17.0, -0.4, 'V', 1],[77.0, 2.7, '%', 1]

V
###Bias induced up to 100% spin-injection and detection polarizations in ferromagnet/bilayer-hBN/graphene/hBN heterostructures|Mallikarjuna Gurram,Siddhartha Omar,Bart J. van Wees###
(1172096, 1172096)
 With such enhanced spin-injection and detection polarizations, wereport a record two-terminal (inverted) spin-valve signals up to 800 Omegawith a magnetoresistance ratio of 2.7%, and we achieve spin accumulations up to4.1 meV.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[341.0, 100, '%', 5],[179.0, 50, '%', 2],[174.0, 135, '%', 2],[136.0, -70, '%', 2],[131.0, -60, '%', 2],[117.0, -0.4, 'V', 2],[22.0, 2.7, '%', 0]

In
###Monte Carlo study of magnetoresistance in a chiral soliton lattice|Shun Okumura,Yasuyuki Kato,Yukitoshi Motome###
(1172364, 1172364)
 Inthe chiral soliton lattice state, we find negative magnetoresistanceproportional to the number of solitons at low temperature, which corroboratesthe spin scattering of electrons by chiral solitons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CrNb3S6
###Monte Carlo study of magnetoresistance in a chiral soliton lattice|Shun Okumura,Yasuyuki Kato,Yukitoshi Motome###
(1172475, 1172479)
 We also discuss thetemperature and magnetic field dependence of the spin structure factor andelectrical resistivity, in comparison with experiments for CrNb3S6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N0
###Negative longitudinal magnetoresistance from anomalous N=0 Landau level in topological materials|B. A. Assaf,T. Phuphachong,E. Kampert,V. V. Volobuev,P. S. Mandal,J. Sánchez-Barriga,O. Rader,G. Bauer,G. Springholz,L. A. de Vaulchier,Y. Guldner###
(1172500, 1172501)
Negative longitudinal magnetoresistance from anomalous N0 Landau level in topological materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Negative longitudinal magnetoresistance from anomalous N=0 Landau level in topological materials|B. A. Assaf,T. Phuphachong,E. Kampert,V. V. Volobuev,P. S. Mandal,J. Sánchez-Barriga,O. Rader,G. Bauer,G. Springholz,L. A. de Vaulchier,Y. Guldner###
(1172521, 1172521)
 Negative longitudinal magnetoresistance (NLMR) is shown to occur intopological materials in the extreme quantum limit, when a magnetic field isapplied parallel to the excitation current.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Negative longitudinal magnetoresistance from anomalous N=0 Landau level in topological materials|B. A. Assaf,T. Phuphachong,E. Kampert,V. V. Volobuev,P. S. Mandal,J. Sánchez-Barriga,O. Rader,G. Bauer,G. Springholz,L. A. de Vaulchier,Y. Guldner###
(1172586, 1172586)
 We perform pulsed and D<missing VAR>C fieldmeasurements on Pb1-xSnxSe epilayers where the topological state can bechemically tuned.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pb1-x
###Negative longitudinal magnetoresistance from anomalous N=0 Landau level in topological materials|B. A. Assaf,T. Phuphachong,E. Kampert,V. V. Volobuev,P. S. Mandal,J. Sánchez-Barriga,O. Rader,G. Bauer,G. Springholz,L. A. de Vaulchier,Y. Guldner###
(1172595, 1172598)
 We perform pulsed and D<missing VAR>C fieldmeasurements on Pb1-xSnxSe epilayers where the topological state can bechemically tuned.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

Se
###Negative longitudinal magnetoresistance from anomalous N=0 Landau level in topological materials|B. A. Assaf,T. Phuphachong,E. Kampert,V. V. Volobuev,P. S. Mandal,J. Sánchez-Barriga,O. Rader,G. Bauer,G. Springholz,L. A. de Vaulchier,Y. Guldner###
(1172600, 1172600)
 We perform pulsed and D<missing VAR>C fieldmeasurements on Pb1-xSnxSe epilayers where the topological state can bechemically tuned.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Negative longitudinal magnetoresistance from anomalous N=0 Landau level in topological materials|B. A. Assaf,T. Phuphachong,E. Kampert,V. V. Volobuev,P. S. Mandal,J. Sánchez-Barriga,O. Rader,G. Bauer,G. Springholz,L. A. de Vaulchier,Y. Guldner###
(1172624, 1172624)
 The NLMR is observed in the topological state, but issuppressed and becomes positive when the system becomes trivial.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Negative longitudinal magnetoresistance from anomalous N=0 Landau level in topological materials|B. A. Assaf,T. Phuphachong,E. Kampert,V. V. Volobuev,P. S. Mandal,J. Sánchez-Barriga,O. Rader,G. Bauer,G. Springholz,L. A. de Vaulchier,Y. Guldner###
(1172666, 1172666)
 In atopological material, the lowest N0 conduction Landau level disperses down inenergy as a function of increasing magnetic field, while the N0 valence Landaulevel disperses upwards.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N0
###Negative longitudinal magnetoresistance from anomalous N=0 Landau level in topological materials|B. A. Assaf,T. Phuphachong,E. Kampert,V. V. Volobuev,P. S. Mandal,J. Sánchez-Barriga,O. Rader,G. Bauer,G. Springholz,L. A. de Vaulchier,Y. Guldner###
(1172680, 1172681)
 In atopological material, the lowest N0 conduction Landau level disperses down inenergy as a function of increasing magnetic field, while the N0 valence Landaulevel disperses upwards.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N0
###Negative longitudinal magnetoresistance from anomalous N=0 Landau level in topological materials|B. A. Assaf,T. Phuphachong,E. Kampert,V. V. Volobuev,P. S. Mandal,J. Sánchez-Barriga,O. Rader,G. Bauer,G. Springholz,L. A. de Vaulchier,Y. Guldner###
(1172717, 1172718)
 In atopological material, the lowest N0 conduction Landau level disperses down inenergy as a function of increasing magnetic field, while the N0 valence Landaulevel disperses upwards.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Negative longitudinal magnetoresistance from anomalous N=0 Landau level in topological materials|B. A. Assaf,T. Phuphachong,E. Kampert,V. V. Volobuev,P. S. Mandal,J. Sánchez-Barriga,O. Rader,G. Bauer,G. Springholz,L. A. de Vaulchier,Y. Guldner###
(1172755, 1172755)
 This anomalous behavior is shown to be responsible forthe observed NLMR.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Negative longitudinal magnetoresistance from anomalous N=0 Landau level in topological materials|B. A. Assaf,T. Phuphachong,E. Kampert,V. V. Volobuev,P. S. Mandal,J. Sánchez-Barriga,O. Rader,G. Bauer,G. Springholz,L. A. de Vaulchier,Y. Guldner###
(1172782, 1172782)
 Our work provides an explanation of the outstanding questionof NLMR in topological insulators and establishes this effect as a possiblehallmark of bulk conduction in topological matter.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbP
###Thermopower and thermal conductivity in the Weyl semimetal NbP|U. Stockert,R. D. dos Reis,M. O. Ajeesh,S. J. Watzman,M. Schmidt,C. Shekhar,J. P. Heremans,C. Felser,M. Baenitz,M. Nicklas###
(1172847, 1172848)
Thermopower and thermal conductivity in the Weyl semimetal NbP.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[204.0, 50, 'K', 5],[214.0, 9, 'T', 5]

NbP
###Thermopower and thermal conductivity in the Weyl semimetal NbP|U. Stockert,R. D. dos Reis,M. O. Ajeesh,S. J. Watzman,M. Schmidt,C. Shekhar,J. P. Heremans,C. Felser,M. Baenitz,M. Nicklas###
(1172857, 1172858)
 The Weyl semimetal NbP exhibits an extremely large magnetoresistance (MR) andan ultra-high mobility.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[194.0, 50, 'K', 4],[204.0, 9, 'T', 4]

In
###Thermopower and thermal conductivity in the Weyl semimetal NbP|U. Stockert,R. D. dos Reis,M. O. Ajeesh,S. J. Watzman,M. Schmidt,C. Shekhar,J. P. Heremans,C. Felser,M. Baenitz,M. Nicklas###
(1172955, 1172955)
 In thiswork we report on temperature- and field-dependent thermopower and thermalconductivity experiments on NbP.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 50, 'K', 2],[107.0, 9, 'T', 2]

NbP
###Thermopower and thermal conductivity in the Weyl semimetal NbP|U. Stockert,R. D. dos Reis,M. O. Ajeesh,S. J. Watzman,M. Schmidt,C. Shekhar,J. P. Heremans,C. Felser,M. Baenitz,M. Nicklas###
(1172990, 1172991)
 In thiswork we report on temperature- and field-dependent thermopower and thermalconductivity experiments on NbP.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 50, 'K', 2],[71.0, 9, 'T', 2]

V/K
###Thermopower and thermal conductivity in the Weyl semimetal NbP|U. Stockert,R. D. dos Reis,M. O. Ajeesh,S. J. Watzman,M. Schmidt,C. Shekhar,J. P. Heremans,C. Felser,M. Baenitz,M. Nicklas###
(1173047, 1173049)
 We founda giant adiabatic magnetothermopower with a maximum of 800 muV/K at 50 K ina field of 9 T.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[3.0, 50, 'K', 0],[13.0, 9, 'T', 0]

In
###Theoretical prediction of a giant anisotropic magnetoresistance in carbon nanoscrolls|Ching Hao Chang,Carmine Ortix###
(1173265, 1173265)
 In ballistic samples their presence is manifested inthe appearance of magnetoconductance oscillations at small magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[189.0, 80, '%', 3]

In
###Theoretical prediction of a giant anisotropic magnetoresistance in carbon nanoscrolls|Ching Hao Chang,Carmine Ortix###
(1173410, 1173410)
 In carbon nanoscrolls theformation of snake orbits leads to a strongly directional dependent positivemagnetoresistance with an anisotropy up to 80%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 80, '%', 0]

Ga
###Metal-Insulator Transition in Ga doped ZnO via Controlled Thickness|Joynarayan Mukherjee,B. R. K. Nanda,M. S. Ramachandra Rao###
(1173474, 1173474)
Metal-Insulator Transition in Ga doped ZnO via Controlled Thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[254.0, 6, 'nm', 4],[269.0, 20, 'nm', 4]

ZnO
###Metal-Insulator Transition in Ga doped ZnO via Controlled Thickness|Joynarayan Mukherjee,B. R. K. Nanda,M. S. Ramachandra Rao###
(1173478, 1173479)
Metal-Insulator Transition in Ga doped ZnO via Controlled Thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[249.0, 6, 'nm', 4],[264.0, 20, 'nm', 4]

Ga
###Metal-Insulator Transition in Ga doped ZnO via Controlled Thickness|Joynarayan Mukherjee,B. R. K. Nanda,M. S. Ramachandra Rao###
(1173504, 1173504)
 We report thickness dependent metal insulator transition in Ga doped ZnO(GaZnO) thin films grown by pulsed laser deposition technique.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[224.0, 6, 'nm', 3],[239.0, 20, 'nm', 3]

ZnO
###Metal-Insulator Transition in Ga doped ZnO via Controlled Thickness|Joynarayan Mukherjee,B. R. K. Nanda,M. S. Ramachandra Rao###
(1173508, 1173509)
 We report thickness dependent metal insulator transition in Ga doped ZnO(GaZnO) thin films grown by pulsed laser deposition technique.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[219.0, 6, 'nm', 3],[234.0, 20, 'nm', 3]

(GaZnO)
###Metal-Insulator Transition in Ga doped ZnO via Controlled Thickness|Joynarayan Mukherjee,B. R. K. Nanda,M. S. Ramachandra Rao###
(1173512, 1173516)
 We report thickness dependent metal insulator transition in Ga doped ZnO(GaZnO) thin films grown by pulsed laser deposition technique.
Featurization successful!
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[212.0, 6, 'nm', 3],[227.0, 20, 'nm', 3]

V
###Metal-Insulator Transition in Ga doped ZnO via Controlled Thickness|Joynarayan Mukherjee,B. R. K. Nanda,M. S. Ramachandra Rao###
(1173643, 1173643)
 Our analysis reveals that the Motts<missing VAR> variable range hopping(VR<missing VAR>H) model governs the insulating behavior in the thinner GaZnO whereas the2D<missing VAR> weak localization phenomena is appropriate to explain the electron transportin the thicker GaZnO.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 6, 'nm', 1],[100.0, 20, 'nm', 1]

H
###Metal-Insulator Transition in Ga doped ZnO via Controlled Thickness|Joynarayan Mukherjee,B. R. K. Nanda,M. S. Ramachandra Rao###
(1173645, 1173645)
 Our analysis reveals that the Motts<missing VAR> variable range hopping(VR<missing VAR>H) model governs the insulating behavior in the thinner GaZnO whereas the2D<missing VAR> weak localization phenomena is appropriate to explain the electron transportin the thicker GaZnO.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 6, 'nm', 1],[98.0, 20, 'nm', 1]

GaZnO
###Metal-Insulator Transition in Ga doped ZnO via Controlled Thickness|Joynarayan Mukherjee,B. R. K. Nanda,M. S. Ramachandra Rao###
(1173664, 1173666)
 Our analysis reveals that the Motts<missing VAR> variable range hopping(VR<missing VAR>H) model governs the insulating behavior in the thinner GaZnO whereas the2D<missing VAR> weak localization phenomena is appropriate to explain the electron transportin the thicker GaZnO.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 6, 'nm', 1],[77.0, 20, 'nm', 1]

GaZnO
###Metal-Insulator Transition in Ga doped ZnO via Controlled Thickness|Joynarayan Mukherjee,B. R. K. Nanda,M. S. Ramachandra Rao###
(1173703, 1173705)
 Our analysis reveals that the Motts<missing VAR> variable range hopping(VR<missing VAR>H) model governs the insulating behavior in the thinner GaZnO whereas the2D<missing VAR> weak localization phenomena is appropriate to explain the electron transportin the thicker GaZnO.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 6, 'nm', 1],[38.0, 20, 'nm', 1]

Ga
###Metal-Insulator Transition in Ga doped ZnO via Controlled Thickness|Joynarayan Mukherjee,B. R. K. Nanda,M. S. Ramachandra Rao###
(1173785, 1173785)
 From the density functional calculations, it is foundthat due to surface reconstruction and Ga doping, strong crystalline disordersets in very thin films to introduce localized states and thereby, restrictsthe donor electron mobility.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 6, 'nm', 1],[42.0, 20, 'nm', 1]

W
###Mesoscopic quantum effects in a bad metal, hydrogen-doped vanadium dioxide|Will J. Hardy,Heng Ji,Hanjong Paik,Darrell G. Schlom,Douglas Natelson###
(1173928, 1173928)
 The standard treatment of quantum corrections to semiclassical electronicconduction assumes that charge carriers propagate many wavelengths betweenscattering events, and succeeds in explaining multiple phenomena (weaklocalization magnetoresistance (WLMR), universal conductance fluctuations,Aharonov-Bohm oscillations) observed in polycrystalline metals and dopedsemiconductors in various dimensionalities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Mesoscopic quantum effects in a bad metal, hydrogen-doped vanadium dioxide|Will J. Hardy,Heng Ji,Hanjong Paik,Darrell G. Schlom,Douglas Natelson###
(1173978, 1173978)
 We report apparent WLMR andconductance fluctuations in Hx<missing VAR>VO2, a poor metal (in violation of theMott-Ioffe-Regel limit) stabilized by the suppression of the VO2metal-insulator transition through atomic hydrogen doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Mesoscopic quantum effects in a bad metal, hydrogen-doped vanadium dioxide|Will J. Hardy,Heng Ji,Hanjong Paik,Darrell G. Schlom,Douglas Natelson###
(1173992, 1173992)
 We report apparent WLMR andconductance fluctuations in Hx<missing VAR>VO2, a poor metal (in violation of theMott-Ioffe-Regel limit) stabilized by the suppression of the VO2metal-insulator transition through atomic hydrogen doping.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

VO2
###Mesoscopic quantum effects in a bad metal, hydrogen-doped vanadium dioxide|Will J. Hardy,Heng Ji,Hanjong Paik,Darrell G. Schlom,Douglas Natelson###
(1173994, 1173996)
 We report apparent WLMR andconductance fluctuations in Hx<missing VAR>VO2, a poor metal (in violation of theMott-Ioffe-Regel limit) stabilized by the suppression of the VO2metal-insulator transition through atomic hydrogen doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

VO2
###Mesoscopic quantum effects in a bad metal, hydrogen-doped vanadium dioxide|Will J. Hardy,Heng Ji,Hanjong Paik,Darrell G. Schlom,Douglas Natelson###
(1174036, 1174038)
 We report apparent WLMR andconductance fluctuations in Hx<missing VAR>VO2, a poor metal (in violation of theMott-Ioffe-Regel limit) stabilized by the suppression of the VO2metal-insulator transition through atomic hydrogen doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Mesoscopic quantum effects in a bad metal, hydrogen-doped vanadium dioxide|Will J. Hardy,Heng Ji,Hanjong Paik,Darrell G. Schlom,Douglas Natelson###
(1174095, 1174095)
 Epitaxial thinfilms, single-crystal nanobeams, and nanosheets show similar phenomenology,though the details of the apparent WLMR seem to depend on the combined effectsof the strain environment and presumed doping level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Mesoscopic quantum effects in a bad metal, hydrogen-doped vanadium dioxide|Will J. Hardy,Heng Ji,Hanjong Paik,Darrell G. Schlom,Douglas Natelson###
(1174145, 1174145)
 Self-consistentquantitative analysis of the WLMR is challenging given this and the highresistivity of the material, since the quantitative expressions for WLMR arederived assuming good metallicity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Mesoscopic quantum effects in a bad metal, hydrogen-doped vanadium dioxide|Will J. Hardy,Heng Ji,Hanjong Paik,Darrell G. Schlom,Douglas Natelson###
(1174184, 1174184)
 Self-consistentquantitative analysis of the WLMR is challenging given this and the highresistivity of the material, since the quantitative expressions for WLMR arederived assuming good metallicity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CuInSe2
###Theoretical study on magnetic tunneling junctions with semiconductor barriers CuInSe$_2$ and CuGaSe$_2$ including a detailed analysis of band-resolved transmittances|Keisuke Masuda,Yoshio Miura###
(1174263, 1174266)
Theoretical study on magnetic tunneling junctions with semiconductor barriers CuInSe2 and CuGaSe2 including a detailed analysis of band-resolved transmittances.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CuGaSe2
###Theoretical study on magnetic tunneling junctions with semiconductor barriers CuInSe$_2$ and CuGaSe$_2$ including a detailed analysis of band-resolved transmittances|Keisuke Masuda,Yoshio Miura###
(1174270, 1174273)
Theoretical study on magnetic tunneling junctions with semiconductor barriers CuInSe2 and CuGaSe2 including a detailed analysis of band-resolved transmittances.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/CuInSe2
###Theoretical study on magnetic tunneling junctions with semiconductor barriers CuInSe$_2$ and CuGaSe$_2$ including a detailed analysis of band-resolved transmittances|Keisuke Masuda,Yoshio Miura###
(1174326, 1174331)
 We study spin-dependent transport properties in magnetic tunneling junctions(MTJs) with semiconductor barriers, Fe/CuInSe2/Fe(001) andFe/CuGaSe2/Fe(001).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Fe/CuGaSe2
###Theoretical study on magnetic tunneling junctions with semiconductor barriers CuInSe$_2$ and CuGaSe$_2$ including a detailed analysis of band-resolved transmittances|Keisuke Masuda,Yoshio Miura###
(1174341, 1174346)
 We study spin-dependent transport properties in magnetic tunneling junctions(MTJs) with semiconductor barriers, Fe/CuInSe2/Fe(001) andFe/CuGaSe2/Fe(001).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

V
###Theoretical study on magnetic tunneling junctions with semiconductor barriers CuInSe$_2$ and CuGaSe$_2$ including a detailed analysis of band-resolved transmittances|Keisuke Masuda,Yoshio Miura###
(1174516, 1174516)
 We carry out a detailedanalysis of the band-resolved transmittances in both the MTJs and find anabsence of the selective transmission of Delta1 wave functions in someenergy regions a few e<missing VAR>V away from the Fermi level due to small band gaps inCuInSe2 and CuGaSe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CuInSe2
###Theoretical study on magnetic tunneling junctions with semiconductor barriers CuInSe$_2$ and CuGaSe$_2$ including a detailed analysis of band-resolved transmittances|Keisuke Masuda,Yoshio Miura###
(1174541, 1174544)
 We carry out a detailedanalysis of the band-resolved transmittances in both the MTJs and find anabsence of the selective transmission of Delta1 wave functions in someenergy regions a few e<missing VAR>V away from the Fermi level due to small band gaps inCuInSe2 and CuGaSe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CuGaSe2
###Theoretical study on magnetic tunneling junctions with semiconductor barriers CuInSe$_2$ and CuGaSe$_2$ including a detailed analysis of band-resolved transmittances|Keisuke Masuda,Yoshio Miura###
(1174548, 1174551)
 We carry out a detailedanalysis of the band-resolved transmittances in both the MTJs and find anabsence of the selective transmission of Delta1 wave functions in someenergy regions a few e<missing VAR>V away from the Fermi level due to small band gaps inCuInSe2 and CuGaSe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HB
###Non-s wave superconductivity in boron-doped nanodiamond films with 0-π Josephson junction array|Somnath Bhattacharyya,Christopher Coleman,Davie Mtsuko,Dmitri Churochkin###
(1174638, 1174639)
 We show that in heavily boron-doped diamondfilms (HBDDF) films some sharp transport features can be manipulated byapplying a magnetic field and controlled finite bias current.
Featurization terminated normally.
0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Non-s wave superconductivity in boron-doped nanodiamond films with 0-π Josephson junction array|Somnath Bhattacharyya,Christopher Coleman,Davie Mtsuko,Dmitri Churochkin###
(1174642, 1174642)
 We show that in heavily boron-doped diamondfilms (HBDDF) films some sharp transport features can be manipulated byapplying a magnetic field and controlled finite bias current.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BK
###Non-s wave superconductivity in boron-doped nanodiamond films with 0-π Josephson junction array|Somnath Bhattacharyya,Christopher Coleman,Davie Mtsuko,Dmitri Churochkin###
(1174784, 1174785)
 The current-voltage characteristics show features of theBerezinskii-Kosterlitz-Thouless (BKT) phase transitions which verifies thetwo-dimensional structure in HBDDF observed recently.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HB
###Non-s wave superconductivity in boron-doped nanodiamond films with 0-π Josephson junction array|Somnath Bhattacharyya,Christopher Coleman,Davie Mtsuko,Dmitri Churochkin###
(1174808, 1174809)
 The current-voltage characteristics show features of theBerezinskii-Kosterlitz-Thouless (BKT) phase transitions which verifies thetwo-dimensional structure in HBDDF observed recently.
Featurization terminated normally.
0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Non-s wave superconductivity in boron-doped nanodiamond films with 0-π Josephson junction array|Somnath Bhattacharyya,Christopher Coleman,Davie Mtsuko,Dmitri Churochkin###
(1174812, 1174812)
 The current-voltage characteristics show features of theBerezinskii-Kosterlitz-Thouless (BKT) phase transitions which verifies thetwo-dimensional structure in HBDDF observed recently.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magnetic field influenced electron-impurity scattering and magnetotransport|Jingjing Feng,Cong Xiao,Yang Gao,Qian Niu###
(1175095, 1175095)
 In this picture, we can conveniently describe the skew scattering andcoordinate jump, which will eventually modify the Boltzmann equation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co25Fe75/Cu/Bi2O3
###Evaluation of bulk-interface contributions to Edelstein magnetoresistance at metal/oxide interfaces|Junyeon Kim,Yan-Ting Chen,Shutaro Karube,Saburo Takahashi,Kouta Kondou,Gen Tatara,YoshiChika Otani###
(1175319, 1175329)
 We report a systematic study on Edelstein magnetoresistance (Edelstein MR) inCo25Fe75/Cu/Bi2O3 heterostructures with a strong spin-orbit interaction at theCu/Bi2O3 interface.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Cu/Bi2O3
###Evaluation of bulk-interface contributions to Edelstein magnetoresistance at metal/oxide interfaces|Junyeon Kim,Yan-Ting Chen,Shutaro Karube,Saburo Takahashi,Kouta Kondou,Gen Tatara,YoshiChika Otani###
(1175350, 1175355)
 We report a systematic study on Edelstein magnetoresistance (Edelstein MR) inCo25Fe75/Cu/Bi2O3 heterostructures with a strong spin-orbit interaction at theCu/Bi2O3 interface.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Cu
###Evaluation of bulk-interface contributions to Edelstein magnetoresistance at metal/oxide interfaces|Junyeon Kim,Yan-Ting Chen,Shutaro Karube,Saburo Takahashi,Kouta Kondou,Gen Tatara,YoshiChika Otani###
(1175388, 1175388)
 We succeed in observing a significant dependence of theEdelstein MR on both Cu layer thickness and temperature, and also develop ageneral analytical model considering distinct bulk and interface contributionson spin relaxation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TmSb
###Extremely Large Magnetoresistance and Electronic Structure of TmSb|Yi-Yan Wang,Hongyun Zhang,Xiao-Qin Lu,Lin-Lin Sun,Sheng Xu,Zhong-Yi Lu,Kai Liu,Shuyun Zhou,Tian-Long Xia###
(1175953, 1175954)
Extremely Large Magnetoresistance and Electronic Structure of TmSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TmSb
###Extremely Large Magnetoresistance and Electronic Structure of TmSb|Yi-Yan Wang,Hongyun Zhang,Xiao-Qin Lu,Lin-Lin Sun,Sheng Xu,Zhong-Yi Lu,Kai Liu,Shuyun Zhou,Tian-Long Xia###
(1175980, 1175981)
 We report the magneto-transport properties and the electronic structure ofTmSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TmSb
###Extremely Large Magnetoresistance and Electronic Structure of TmSb|Yi-Yan Wang,Hongyun Zhang,Xiao-Qin Lu,Lin-Lin Sun,Sheng Xu,Zhong-Yi Lu,Kai Liu,Shuyun Zhou,Tian-Long Xia###
(1175984, 1175985)
 TmSb exhibits extremely large transverse magnetoresistance andShubnikov-de Haas (SdH) oscillation at low temperature and high magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Extremely Large Magnetoresistance and Electronic Structure of TmSb|Yi-Yan Wang,Hongyun Zhang,Xiao-Qin Lu,Lin-Lin Sun,Sheng Xu,Zhong-Yi Lu,Kai Liu,Shuyun Zhou,Tian-Long Xia###
(1176008, 1176008)
 TmSb exhibits extremely large transverse magnetoresistance andShubnikov-de Haas (SdH) oscillation at low temperature and high magnetic field.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Extremely Large Magnetoresistance and Electronic Structure of TmSb|Yi-Yan Wang,Hongyun Zhang,Xiao-Qin Lu,Lin-Lin Sun,Sheng Xu,Zhong-Yi Lu,Kai Liu,Shuyun Zhou,Tian-Long Xia###
(1176066, 1176066)
Interestingly, the split of Fermi surfaces induced by the nonsymmetricspin-orbit interaction has been observed from SdH oscillation.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Extremely Large Magnetoresistance and Electronic Structure of TmSb|Yi-Yan Wang,Hongyun Zhang,Xiao-Qin Lu,Lin-Lin Sun,Sheng Xu,Zhong-Yi Lu,Kai Liu,Shuyun Zhou,Tian-Long Xia###
(1176085, 1176085)
 The analysis ofthe angle-dependent SdH oscillation illustrates the contribution of each Fermisurface to the conductivity.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Extremely Large Magnetoresistance and Electronic Structure of TmSb|Yi-Yan Wang,Hongyun Zhang,Xiao-Qin Lu,Lin-Lin Sun,Sheng Xu,Zhong-Yi Lu,Kai Liu,Shuyun Zhou,Tian-Long Xia###
(1176135, 1176135)
 The electronic structure revealed byangle-resolved photoemission spectroscopy (ARPES) and first-principlescalculations demonstrates a gap at X<missing VAR> point and the absence of band inversion.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Extremely Large Magnetoresistance and Electronic Structure of TmSb|Yi-Yan Wang,Hongyun Zhang,Xiao-Qin Lu,Lin-Lin Sun,Sheng Xu,Zhong-Yi Lu,Kai Liu,Shuyun Zhou,Tian-Long Xia###
(1176190, 1176190)
Combined with the trivial Berry phase extracted from SdH oscillation and thenearly equal concentrations of electron and hole from Hall measurements, it issuggested that TmSb is a topologically trivial semimetal and the observed XMRoriginates from the electron-hole compensation and high mobility.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TmSb
###Extremely Large Magnetoresistance and Electronic Structure of TmSb|Yi-Yan Wang,Hongyun Zhang,Xiao-Qin Lu,Lin-Lin Sun,Sheng Xu,Zhong-Yi Lu,Kai Liu,Shuyun Zhou,Tian-Long Xia###
(1176229, 1176230)
Combined with the trivial Berry phase extracted from SdH oscillation and thenearly equal concentrations of electron and hole from Hall measurements, it issuggested that TmSb is a topologically trivial semimetal and the observed XMRoriginates from the electron-hole compensation and high mobility.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbN
###Probe of Spin Dynamics in Superconducting NbN Thin Films via Spin Pumping|Yunyan Yao,Qi Song,Yota Takamura,Juan Pedro Cascales,Wei Yuan,Yang Ma,Yu Yun,X. C. Xie,Jagadeesh S. Moodera,Wei Han###
(1176292, 1176293)
Probe of Spin Dynamics in Superconducting NbN Thin Films via Spin Pumping.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[308.0, 2, 'D', 6]

(SC)
###Probe of Spin Dynamics in Superconducting NbN Thin Films via Spin Pumping|Yunyan Yao,Qi Song,Yota Takamura,Juan Pedro Cascales,Wei Yuan,Yang Ma,Yu Yun,X. C. Xie,Jagadeesh S. Moodera,Wei Han###
(1176316, 1176319)
 The emerging field of superconductor (SC) spintronics has attracted intensiveattentions recently.
Featurization successful!
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[282.0, 2, 'D', 5]

SC
###Probe of Spin Dynamics in Superconducting NbN Thin Films via Spin Pumping|Yunyan Yao,Qi Song,Yota Takamura,Juan Pedro Cascales,Wei Yuan,Yang Ma,Yu Yun,X. C. Xie,Jagadeesh S. Moodera,Wei Han###
(1176347, 1176348)
 Many fantastic spin dependent properties in SC have beendiscovered, including the observation of large magnetoresistance, long spinlifetimes and the giant spin Hall effect in SC, as well as spin supercurrent inJosephson junctions, etc.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[253.0, 2, 'D', 4]

SC
###Probe of Spin Dynamics in Superconducting NbN Thin Films via Spin Pumping|Yunyan Yao,Qi Song,Yota Takamura,Juan Pedro Cascales,Wei Yuan,Yang Ma,Yu Yun,X. C. Xie,Jagadeesh S. Moodera,Wei Han###
(1176392, 1176393)
 Many fantastic spin dependent properties in SC have beendiscovered, including the observation of large magnetoresistance, long spinlifetimes and the giant spin Hall effect in SC, as well as spin supercurrent inJosephson junctions, etc.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[208.0, 2, 'D', 4]

SC
###Probe of Spin Dynamics in Superconducting NbN Thin Films via Spin Pumping|Yunyan Yao,Qi Song,Yota Takamura,Juan Pedro Cascales,Wei Yuan,Yang Ma,Yu Yun,X. C. Xie,Jagadeesh S. Moodera,Wei Han###
(1176427, 1176428)
 Regarding the spin dynamic in SC films, few studieshas been reported yet.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 2, 'D', 3]

NbN
###Probe of Spin Dynamics in Superconducting NbN Thin Films via Spin Pumping|Yunyan Yao,Qi Song,Yota Takamura,Juan Pedro Cascales,Wei Yuan,Yang Ma,Yu Yun,X. C. Xie,Jagadeesh S. Moodera,Wei Han###
(1176477, 1176478)
 Here, we report the investigation of the spin dynamicsin an s<missing VAR>-wave superconducting NbN film via spin pumping from an adjacentinsulating ferromagnet GdN layer.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 2, 'D', 2]

GdN
###Probe of Spin Dynamics in Superconducting NbN Thin Films via Spin Pumping|Yunyan Yao,Qi Song,Yota Takamura,Juan Pedro Cascales,Wei Yuan,Yang Ma,Yu Yun,X. C. Xie,Jagadeesh S. Moodera,Wei Han###
(1176499, 1176500)
 Here, we report the investigation of the spin dynamicsin an s<missing VAR>-wave superconducting NbN film via spin pumping from an adjacentinsulating ferromagnet GdN layer.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 2, 'D', 2]

NbN
###Probe of Spin Dynamics in Superconducting NbN Thin Films via Spin Pumping|Yunyan Yao,Qi Song,Yota Takamura,Juan Pedro Cascales,Wei Yuan,Yang Ma,Yu Yun,X. C. Xie,Jagadeesh S. Moodera,Wei Han###
(1176543, 1176544)
 A profound coherence peak of the Gilbertdamping is observed slightly below the superconducting critical temperature ofthe NbN layer, which is consistent with recent theoretical studies.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 2, 'D', 1]

Fe
###Topological Dirac semimetal phase in the iron-based superconductor Fe(Te,Se)|Peng Zhang,Zhijun Wang,Yukiaki Ishida,Yoshimitsu Kohama,Xianxin Wu,Koichiro Yaji,Yue Sun,Cedric Bareille,Kenta Kuroda,Takeshi Kondo,Kozo Okazaki,Koichi Kindo,Kazuki Sumida,Shilong Wu,Koji Miyamoto,Taichi Okuda,Hong Ding,G. D. Gu,Tsuyoshi Tamegai,Ronny Thomale,Takuto Kawakami,Masatoshi Sato,Shik Shin###
(1176634, 1176634)
Topological Dirac semimetal phase in the iron-based superconductor Fe(Te,Se).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[255.0, 6, 'T', 4]

Te
###Topological Dirac semimetal phase in the iron-based superconductor Fe(Te,Se)|Peng Zhang,Zhijun Wang,Yukiaki Ishida,Yoshimitsu Kohama,Xianxin Wu,Koichiro Yaji,Yue Sun,Cedric Bareille,Kenta Kuroda,Takeshi Kondo,Kozo Okazaki,Koichi Kindo,Kazuki Sumida,Shilong Wu,Koji Miyamoto,Taichi Okuda,Hong Ding,G. D. Gu,Tsuyoshi Tamegai,Ronny Thomale,Takuto Kawakami,Masatoshi Sato,Shik Shin###
(1176636, 1176636)
Topological Dirac semimetal phase in the iron-based superconductor Fe(Te,Se).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[253.0, 6, 'T', 4]

Se
###Topological Dirac semimetal phase in the iron-based superconductor Fe(Te,Se)|Peng Zhang,Zhijun Wang,Yukiaki Ishida,Yoshimitsu Kohama,Xianxin Wu,Koichiro Yaji,Yue Sun,Cedric Bareille,Kenta Kuroda,Takeshi Kondo,Kozo Okazaki,Koichi Kindo,Kazuki Sumida,Shilong Wu,Koji Miyamoto,Taichi Okuda,Hong Ding,G. D. Gu,Tsuyoshi Tamegai,Ronny Thomale,Takuto Kawakami,Masatoshi Sato,Shik Shin###
(1176638, 1176638)
Topological Dirac semimetal phase in the iron-based superconductor Fe(Te,Se).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[251.0, 6, 'T', 4]

S
###Topological Dirac semimetal phase in the iron-based superconductor Fe(Te,Se)|Peng Zhang,Zhijun Wang,Yukiaki Ishida,Yoshimitsu Kohama,Xianxin Wu,Koichiro Yaji,Yue Sun,Cedric Bareille,Kenta Kuroda,Takeshi Kondo,Kozo Okazaki,Koichi Kindo,Kazuki Sumida,Shilong Wu,Koji Miyamoto,Taichi Okuda,Hong Ding,G. D. Gu,Tsuyoshi Tamegai,Ronny Thomale,Takuto Kawakami,Masatoshi Sato,Shik Shin###
(1176769, 1176769)
 We observe evidence for aTDS phase in FeTe1-xSex<missing VAR> (x<missing VAR>  0.45), one of the high transitiontemperature (Tc) iron-based superconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 6, 'T', 1]

FeTe1-xSe
###Topological Dirac semimetal phase in the iron-based superconductor Fe(Te,Se)|Peng Zhang,Zhijun Wang,Yukiaki Ishida,Yoshimitsu Kohama,Xianxin Wu,Koichiro Yaji,Yue Sun,Cedric Bareille,Kenta Kuroda,Takeshi Kondo,Kozo Okazaki,Koichi Kindo,Kazuki Sumida,Shilong Wu,Koji Miyamoto,Taichi Okuda,Hong Ding,G. D. Gu,Tsuyoshi Tamegai,Ronny Thomale,Takuto Kawakami,Masatoshi Sato,Shik Shin###
(1176775, 1176780)
 We observe evidence for aTDS phase in FeTe1-xSex<missing VAR> (x<missing VAR>  0.45), one of the high transitiontemperature (Tc) iron-based superconductors.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[109.0, 6, 'T', 1]

In
###Topological Dirac semimetal phase in the iron-based superconductor Fe(Te,Se)|Peng Zhang,Zhijun Wang,Yukiaki Ishida,Yoshimitsu Kohama,Xianxin Wu,Koichiro Yaji,Yue Sun,Cedric Bareille,Kenta Kuroda,Takeshi Kondo,Kozo Okazaki,Koichi Kindo,Kazuki Sumida,Shilong Wu,Koji Miyamoto,Taichi Okuda,Hong Ding,G. D. Gu,Tsuyoshi Tamegai,Ronny Thomale,Takuto Kawakami,Masatoshi Sato,Shik Shin###
(1176816, 1176816)
 In angle-resolved photoelectronspectroscopy (ARPES) and transport experiments, we find spin-polarized statesoverlapping with the bulk states on the (001) surface, and linearmagnetoresistance (MR) starting from 6 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 6, 'T', 0]

S
###Topological Dirac semimetal phase in the iron-based superconductor Fe(Te,Se)|Peng Zhang,Zhijun Wang,Yukiaki Ishida,Yoshimitsu Kohama,Xianxin Wu,Koichiro Yaji,Yue Sun,Cedric Bareille,Kenta Kuroda,Takeshi Kondo,Kozo Okazaki,Koichi Kindo,Kazuki Sumida,Shilong Wu,Koji Miyamoto,Taichi Okuda,Hong Ding,G. D. Gu,Tsuyoshi Tamegai,Ronny Thomale,Takuto Kawakami,Masatoshi Sato,Shik Shin###
(1176832, 1176832)
 In angle-resolved photoelectronspectroscopy (ARPES) and transport experiments, we find spin-polarized statesoverlapping with the bulk states on the (001) surface, and linearmagnetoresistance (MR) starting from 6 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 6, 'T', 0]

S
###Topological Dirac semimetal phase in the iron-based superconductor Fe(Te,Se)|Peng Zhang,Zhijun Wang,Yukiaki Ishida,Yoshimitsu Kohama,Xianxin Wu,Koichiro Yaji,Yue Sun,Cedric Bareille,Kenta Kuroda,Takeshi Kondo,Kozo Okazaki,Koichi Kindo,Kazuki Sumida,Shilong Wu,Koji Miyamoto,Taichi Okuda,Hong Ding,G. D. Gu,Tsuyoshi Tamegai,Ronny Thomale,Takuto Kawakami,Masatoshi Sato,Shik Shin###
(1176912, 1176912)
 Combined, this strongly suggests theexistence of a TDS phase, which is confirmed by theoretical calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 6, 'T', 1]

In
###Topological Dirac semimetal phase in the iron-based superconductor Fe(Te,Se)|Peng Zhang,Zhijun Wang,Yukiaki Ishida,Yoshimitsu Kohama,Xianxin Wu,Koichiro Yaji,Yue Sun,Cedric Bareille,Kenta Kuroda,Takeshi Kondo,Kozo Okazaki,Koichi Kindo,Kazuki Sumida,Shilong Wu,Koji Miyamoto,Taichi Okuda,Hong Ding,G. D. Gu,Tsuyoshi Tamegai,Ronny Thomale,Takuto Kawakami,Masatoshi Sato,Shik Shin###
(1176930, 1176930)
 Intotal, the topological electronic states in Fe(Te,Se) provide a promising highTc platform to realize multiple topological superconducting phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 6, 'T', 2]

Fe
###Topological Dirac semimetal phase in the iron-based superconductor Fe(Te,Se)|Peng Zhang,Zhijun Wang,Yukiaki Ishida,Yoshimitsu Kohama,Xianxin Wu,Koichiro Yaji,Yue Sun,Cedric Bareille,Kenta Kuroda,Takeshi Kondo,Kozo Okazaki,Koichi Kindo,Kazuki Sumida,Shilong Wu,Koji Miyamoto,Taichi Okuda,Hong Ding,G. D. Gu,Tsuyoshi Tamegai,Ronny Thomale,Takuto Kawakami,Masatoshi Sato,Shik Shin###
(1176946, 1176946)
 Intotal, the topological electronic states in Fe(Te,Se) provide a promising highTc platform to realize multiple topological superconducting phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 6, 'T', 2]

Te
###Topological Dirac semimetal phase in the iron-based superconductor Fe(Te,Se)|Peng Zhang,Zhijun Wang,Yukiaki Ishida,Yoshimitsu Kohama,Xianxin Wu,Koichiro Yaji,Yue Sun,Cedric Bareille,Kenta Kuroda,Takeshi Kondo,Kozo Okazaki,Koichi Kindo,Kazuki Sumida,Shilong Wu,Koji Miyamoto,Taichi Okuda,Hong Ding,G. D. Gu,Tsuyoshi Tamegai,Ronny Thomale,Takuto Kawakami,Masatoshi Sato,Shik Shin###
(1176948, 1176948)
 Intotal, the topological electronic states in Fe(Te,Se) provide a promising highTc platform to realize multiple topological superconducting phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 6, 'T', 2]

Se
###Topological Dirac semimetal phase in the iron-based superconductor Fe(Te,Se)|Peng Zhang,Zhijun Wang,Yukiaki Ishida,Yoshimitsu Kohama,Xianxin Wu,Koichiro Yaji,Yue Sun,Cedric Bareille,Kenta Kuroda,Takeshi Kondo,Kozo Okazaki,Koichi Kindo,Kazuki Sumida,Shilong Wu,Koji Miyamoto,Taichi Okuda,Hong Ding,G. D. Gu,Tsuyoshi Tamegai,Ronny Thomale,Takuto Kawakami,Masatoshi Sato,Shik Shin###
(1176950, 1176950)
 Intotal, the topological electronic states in Fe(Te,Se) provide a promising highTc platform to realize multiple topological superconducting phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 6, 'T', 2]

SrTiO3
###Anisotropic electronic transport and Rashba effect of the two-dimensional electron system in (110) SrTiO$_3$-based heterostructures|K. Wolff,R. Eder,R. Schäfer,R. Schneider,D. Fuchs###
(1177326, 1177329)
Anisotropic electronic transport and Rashba effect of the two-dimensional electron system in (110) SrTiO3-based heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 30, 'K', 3],[266.0, 60, '%', 6]

Al2O3
###Anisotropic electronic transport and Rashba effect of the two-dimensional electron system in (110) SrTiO$_3$-based heterostructures|K. Wolff,R. Eder,R. Schäfer,R. Schneider,D. Fuchs###
(1177351, 1177354)
 The two-dimensional electron system in (110)Al2O3-delta/SrTiO3heterostructures displays anisotropic electronic transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 30, 'K', 2],[241.0, 60, '%', 5]

SrTiO3
###Anisotropic electronic transport and Rashba effect of the two-dimensional electron system in (110) SrTiO$_3$-based heterostructures|K. Wolff,R. Eder,R. Schäfer,R. Schneider,D. Fuchs###
(1177358, 1177361)
 The two-dimensional electron system in (110)Al2O3-delta/SrTiO3heterostructures displays anisotropic electronic transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 30, 'K', 2],[234.0, 60, '%', 5]

K
###Anisotropic electronic transport and Rashba effect of the two-dimensional electron system in (110) SrTiO$_3$-based heterostructures|K. Wolff,R. Eder,R. Schäfer,R. Schneider,D. Fuchs###
(1177477, 1177477)
 However, at temperatures T<missing VAR><5K and magnetic field B<2T MR isdominated by weak antilocalization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 30, 'K', 1],[118.0, 60, '%', 2]

B
###Anisotropic electronic transport and Rashba effect of the two-dimensional electron system in (110) SrTiO$_3$-based heterostructures|K. Wolff,R. Eder,R. Schäfer,R. Schneider,D. Fuchs###
(1177485, 1177485)
 However, at temperatures T<missing VAR><5K and magnetic field B<2T MR isdominated by weak antilocalization.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 30, 'K', 1],[110.0, 60, '%', 2]

I
###Anisotropic electronic transport and Rashba effect of the two-dimensional electron system in (110) SrTiO$_3$-based heterostructures|K. Wolff,R. Eder,R. Schäfer,R. Schneider,D. Fuchs###
(1177611, 1177611)
 However, the AMR-amplitude is found to beanisotropic with respect to the current direction, leading to a 60% larger AMRamplitude for current I along the [001] direction compared to I parallel to[1bar10].
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 30, 'K', 3],[16.0, 60, '%', 0]

I
###Anisotropic electronic transport and Rashba effect of the two-dimensional electron system in (110) SrTiO$_3$-based heterostructures|K. Wolff,R. Eder,R. Schäfer,R. Schneider,D. Fuchs###
(1177627, 1177627)
 However, the AMR-amplitude is found to beanisotropic with respect to the current direction, leading to a 60% larger AMRamplitude for current I along the [001] direction compared to I parallel to[1bar10].
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 30, 'K', 3],[32.0, 60, '%', 0]

In
###Anisotropic electronic transport and Rashba effect of the two-dimensional electron system in (110) SrTiO$_3$-based heterostructures|K. Wolff,R. Eder,R. Schäfer,R. Schneider,D. Fuchs###
(1177674, 1177674)
 In combination withsemiclassical Boltzmann theory the non-crystalline AMR is well described,despite the anisotropic Fermi surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[210.0, 30, 'K', 5],[79.0, 60, '%', 2]

YI
###Synthetic antiferromagnetic coupling between ultra-thin insulating garnets|Juan M. Gomez-Perez,Saül Vélez,Lauren McKenzie-Sell,Mario Amado,Javier Herrero-Martín,Josu López-López,S. Blanco-Canosa,Luis E. Hueso,Andrey Chuvilin,Jason W. A. Robinson,Fèlix Casanova###
(1178172, 1178173)
 Here we report ultra-thin yttrium iron garnet (YIG) / gadolinium irongarnet (GdIG) insulating bilayers on gadolinium iron garnet (GGG).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GdI
###Synthetic antiferromagnetic coupling between ultra-thin insulating garnets|Juan M. Gomez-Perez,Saül Vélez,Lauren McKenzie-Sell,Mario Amado,Javier Herrero-Martín,Josu López-López,S. Blanco-Canosa,Luis E. Hueso,Andrey Chuvilin,Jason W. A. Robinson,Fèlix Casanova###
(1178187, 1178188)
 Here we report ultra-thin yttrium iron garnet (YIG) / gadolinium irongarnet (GdIG) insulating bilayers on gadolinium iron garnet (GGG).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Synthetic antiferromagnetic coupling between ultra-thin insulating garnets|Juan M. Gomez-Perez,Saül Vélez,Lauren McKenzie-Sell,Mario Amado,Javier Herrero-Martín,Josu López-López,S. Blanco-Canosa,Luis E. Hueso,Andrey Chuvilin,Jason W. A. Robinson,Fèlix Casanova###
(1178221, 1178221)
 From spinHall magnetoresistance (SMR) and X<missing VAR>-ray magnetic circular dichroismmeasurements, we show that the YIG<missing VAR> and GdIG<missing VAR> magnetically couple antiparalleleven in moderate in-plane magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YI
###Synthetic antiferromagnetic coupling between ultra-thin insulating garnets|Juan M. Gomez-Perez,Saül Vélez,Lauren McKenzie-Sell,Mario Amado,Javier Herrero-Martín,Josu López-López,S. Blanco-Canosa,Luis E. Hueso,Andrey Chuvilin,Jason W. A. Robinson,Fèlix Casanova###
(1178250, 1178251)
 From spinHall magnetoresistance (SMR) and X<missing VAR>-ray magnetic circular dichroismmeasurements, we show that the YIG<missing VAR> and GdIG<missing VAR> magnetically couple antiparalleleven in moderate in-plane magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GdI
###Synthetic antiferromagnetic coupling between ultra-thin insulating garnets|Juan M. Gomez-Perez,Saül Vélez,Lauren McKenzie-Sell,Mario Amado,Javier Herrero-Martín,Josu López-López,S. Blanco-Canosa,Luis E. Hueso,Andrey Chuvilin,Jason W. A. Robinson,Fèlix Casanova###
(1178256, 1178257)
 From spinHall magnetoresistance (SMR) and X<missing VAR>-ray magnetic circular dichroismmeasurements, we show that the YIG<missing VAR> and GdIG<missing VAR> magnetically couple antiparalleleven in moderate in-plane magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Synthetic antiferromagnetic coupling between ultra-thin insulating garnets|Juan M. Gomez-Perez,Saül Vélez,Lauren McKenzie-Sell,Mario Amado,Javier Herrero-Martín,Josu López-López,S. Blanco-Canosa,Luis E. Hueso,Andrey Chuvilin,Jason W. A. Robinson,Fèlix Casanova###
(1178342, 1178342)
 As an example, we demonstrate a memory element with orthogonalmagnetization switching that can be read by SMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Synthetic antiferromagnetic coupling between ultra-thin insulating garnets|Juan M. Gomez-Perez,Saül Vélez,Lauren McKenzie-Sell,Mario Amado,Javier Herrero-Martín,Josu López-López,S. Blanco-Canosa,Luis E. Hueso,Andrey Chuvilin,Jason W. A. Robinson,Fèlix Casanova###
(1178378, 1178378)
 As an example, we demonstrate a memory element with orthogonalmagnetization switching that can be read by SMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B20
###Doping-induced magnetism in the semiconducting B20 compound RuGe|Mojammel A. Khan,D. P. Young,P. W. Adams,D. Browne,D. M. Gautreau,W. Adam Phelan,Huibo Cao,J. F. DiTusa###
(1178403, 1178404)
Doping-induced magnetism in the semiconducting B20 compound RuGe.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 9, 'K', 3]

RuGe
###Doping-induced magnetism in the semiconducting B20 compound RuGe|Mojammel A. Khan,D. P. Young,P. W. Adams,D. Browne,D. M. Gautreau,W. Adam Phelan,Huibo Cao,J. F. DiTusa###
(1178408, 1178409)
Doping-induced magnetism in the semiconducting B20 compound RuGe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 9, 'K', 3]

RuGe
###Doping-induced magnetism in the semiconducting B20 compound RuGe|Mojammel A. Khan,D. P. Young,P. W. Adams,D. Browne,D. M. Gautreau,W. Adam Phelan,Huibo Cao,J. F. DiTusa###
(1178412, 1178413)
 RuGe, a diamagnetic small-band gap semiconductor, and CoGe, a nonmagneticsemimetal, are both isostructural to the Kondo insulator FeSi and the skyrmionlattice host MnSi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 9, 'K', 2]

CoGe
###Doping-induced magnetism in the semiconducting B20 compound RuGe|Mojammel A. Khan,D. P. Young,P. W. Adams,D. Browne,D. M. Gautreau,W. Adam Phelan,Huibo Cao,J. F. DiTusa###
(1178431, 1178432)
 RuGe, a diamagnetic small-band gap semiconductor, and CoGe, a nonmagneticsemimetal, are both isostructural to the Kondo insulator FeSi and the skyrmionlattice host MnSi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 9, 'K', 2]

FeSi
###Doping-induced magnetism in the semiconducting B20 compound RuGe|Mojammel A. Khan,D. P. Young,P. W. Adams,D. Browne,D. M. Gautreau,W. Adam Phelan,Huibo Cao,J. F. DiTusa###
(1178457, 1178458)
 RuGe, a diamagnetic small-band gap semiconductor, and CoGe, a nonmagneticsemimetal, are both isostructural to the Kondo insulator FeSi and the skyrmionlattice host MnSi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 9, 'K', 2]

MnSi
###Doping-induced magnetism in the semiconducting B20 compound RuGe|Mojammel A. Khan,D. P. Young,P. W. Adams,D. Browne,D. M. Gautreau,W. Adam Phelan,Huibo Cao,J. F. DiTusa###
(1178471, 1178472)
 RuGe, a diamagnetic small-band gap semiconductor, and CoGe, a nonmagneticsemimetal, are both isostructural to the Kondo insulator FeSi and the skyrmionlattice host MnSi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 9, 'K', 2]

Co
###Doping-induced magnetism in the semiconducting B20 compound RuGe|Mojammel A. Khan,D. P. Young,P. W. Adams,D. Browne,D. M. Gautreau,W. Adam Phelan,Huibo Cao,J. F. DiTusa###
(1178497, 1178497)
 Here, we have explored the magnetic and transport propertiesof Co-doped RuGe Ru1-xCox<missing VAR>Ge.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 9, 'K', 1]

RuGe
###Doping-induced magnetism in the semiconducting B20 compound RuGe|Mojammel A. Khan,D. P. Young,P. W. Adams,D. Browne,D. M. Gautreau,W. Adam Phelan,Huibo Cao,J. F. DiTusa###
(1178501, 1178502)
 Here, we have explored the magnetic and transport propertiesof Co-doped RuGe Ru1-xCox<missing VAR>Ge.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 9, 'K', 1]

Ru1-xCo
###Doping-induced magnetism in the semiconducting B20 compound RuGe|Mojammel A. Khan,D. P. Young,P. W. Adams,D. Browne,D. M. Gautreau,W. Adam Phelan,Huibo Cao,J. F. DiTusa###
(1178504, 1178508)
 Here, we have explored the magnetic and transport propertiesof Co-doped RuGe Ru1-xCox<missing VAR>Ge.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[36.0, 9, 'K', 1]

Ge
###Doping-induced magnetism in the semiconducting B20 compound RuGe|Mojammel A. Khan,D. P. Young,P. W. Adams,D. Browne,D. M. Gautreau,W. Adam Phelan,Huibo Cao,J. F. DiTusa###
(1178510, 1178510)
 Here, we have explored the magnetic and transport propertiesof Co-doped RuGe Ru1-xCox<missing VAR>Ge.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 9, 'K', 1]

Fe1-xCo
###Doping-induced magnetism in the semiconducting B20 compound RuGe|Mojammel A. Khan,D. P. Young,P. W. Adams,D. Browne,D. M. Gautreau,W. Adam Phelan,Huibo Cao,J. F. DiTusa###
(1178617, 1178621)
 The magnetization, magnetoresistance,and the specific heat capacity all resemble that of Fe1-xCox<missing VAR>Si forsimilar Co substitution levels, suggesting that Ru1-xCox<missing VAR>Ge hostsequally as interesting magnetic and charge carrier transport properties.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[73.0, 9, 'K', 1]

Si
###Doping-induced magnetism in the semiconducting B20 compound RuGe|Mojammel A. Khan,D. P. Young,P. W. Adams,D. Browne,D. M. Gautreau,W. Adam Phelan,Huibo Cao,J. F. DiTusa###
(1178623, 1178623)
 The magnetization, magnetoresistance,and the specific heat capacity all resemble that of Fe1-xCox<missing VAR>Si forsimilar Co substitution levels, suggesting that Ru1-xCox<missing VAR>Ge hostsequally as interesting magnetic and charge carrier transport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 9, 'K', 1]

Co
###Doping-induced magnetism in the semiconducting B20 compound RuGe|Mojammel A. Khan,D. P. Young,P. W. Adams,D. Browne,D. M. Gautreau,W. Adam Phelan,Huibo Cao,J. F. DiTusa###
(1178630, 1178630)
 The magnetization, magnetoresistance,and the specific heat capacity all resemble that of Fe1-xCox<missing VAR>Si forsimilar Co substitution levels, suggesting that Ru1-xCox<missing VAR>Ge hostsequally as interesting magnetic and charge carrier transport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 9, 'K', 1]

Ru1-xCo
###Doping-induced magnetism in the semiconducting B20 compound RuGe|Mojammel A. Khan,D. P. Young,P. W. Adams,D. Browne,D. M. Gautreau,W. Adam Phelan,Huibo Cao,J. F. DiTusa###
(1178641, 1178645)
 The magnetization, magnetoresistance,and the specific heat capacity all resemble that of Fe1-xCox<missing VAR>Si forsimilar Co substitution levels, suggesting that Ru1-xCox<missing VAR>Ge hostsequally as interesting magnetic and charge carrier transport properties.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[97.0, 9, 'K', 1]

Ge
###Doping-induced magnetism in the semiconducting B20 compound RuGe|Mojammel A. Khan,D. P. Young,P. W. Adams,D. Browne,D. M. Gautreau,W. Adam Phelan,Huibo Cao,J. F. DiTusa###
(1178647, 1178647)
 The magnetization, magnetoresistance,and the specific heat capacity all resemble that of Fe1-xCox<missing VAR>Si forsimilar Co substitution levels, suggesting that Ru1-xCox<missing VAR>Ge hostsequally as interesting magnetic and charge carrier transport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 9, 'K', 1]

RuCl3
###Large Thermal Hall Effect in $α$-RuCl$_3$: Evidence for Heat Transport by Kitaev-Heisenberg Paramagnons|Richard Hentrich,Maria Roslova,Anna Isaeva,Thomas Doert,Wolfram Brenig,Bernd Büchner,Christian Hess###
(1178690, 1178692)
Large Thermal Hall Effect in -RuCl3 Evidence for Heat Transport by Kitaev-Heisenberg Paramagnons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[244.0, 30, 'K', 4]

RuCl3
###Large Thermal Hall Effect in $α$-RuCl$_3$: Evidence for Heat Transport by Kitaev-Heisenberg Paramagnons|Richard Hentrich,Maria Roslova,Anna Isaeva,Thomas Doert,Wolfram Brenig,Bernd Büchner,Christian Hess###
(1178795, 1178797)
 We present experimental results for the thermal Halleffect of the material alpha-RuCl3 which recently emerged as a primecandidate for realizing such physics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 30, 'K', 2]

At
###Large Thermal Hall Effect in $α$-RuCl$_3$: Evidence for Heat Transport by Kitaev-Heisenberg Paramagnons|Richard Hentrich,Maria Roslova,Anna Isaeva,Thomas Doert,Wolfram Brenig,Bernd Büchner,Christian Hess###
(1178823, 1178823)
 At temperatures above long-range magneticordering T<missing VAR>gtrsim T<missing VAR>Napprox8 K, we observe with an applied magnetic fieldB perpendicular to the honeycomb layers a sizeable positive transversal heatconductivity kappaxy which increases linearly with B.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 30, 'K', 1]

N
###Large Thermal Hall Effect in $α$-RuCl$_3$: Evidence for Heat Transport by Kitaev-Heisenberg Paramagnons|Richard Hentrich,Maria Roslova,Anna Isaeva,Thomas Doert,Wolfram Brenig,Bernd Büchner,Christian Hess###
(1178842, 1178842)
 At temperatures above long-range magneticordering T<missing VAR>gtrsim T<missing VAR>Napprox8 K, we observe with an applied magnetic fieldB perpendicular to the honeycomb layers a sizeable positive transversal heatconductivity kappaxy which increases linearly with B.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 30, 'K', 1]

K
###Large Thermal Hall Effect in $α$-RuCl$_3$: Evidence for Heat Transport by Kitaev-Heisenberg Paramagnons|Richard Hentrich,Maria Roslova,Anna Isaeva,Thomas Doert,Wolfram Brenig,Bernd Büchner,Christian Hess###
(1178846, 1178846)
 At temperatures above long-range magneticordering T<missing VAR>gtrsim T<missing VAR>Napprox8 K, we observe with an applied magnetic fieldB perpendicular to the honeycomb layers a sizeable positive transversal heatconductivity kappaxy which increases linearly with B.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 30, 'K', 1]

B
###Large Thermal Hall Effect in $α$-RuCl$_3$: Evidence for Heat Transport by Kitaev-Heisenberg Paramagnons|Richard Hentrich,Maria Roslova,Anna Isaeva,Thomas Doert,Wolfram Brenig,Bernd Büchner,Christian Hess###
(1178864, 1178864)
 At temperatures above long-range magneticordering T<missing VAR>gtrsim T<missing VAR>Napprox8 K, we observe with an applied magnetic fieldB perpendicular to the honeycomb layers a sizeable positive transversal heatconductivity kappaxy which increases linearly with B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 30, 'K', 1]

B
###Large Thermal Hall Effect in $α$-RuCl$_3$: Evidence for Heat Transport by Kitaev-Heisenberg Paramagnons|Richard Hentrich,Maria Roslova,Anna Isaeva,Thomas Doert,Wolfram Brenig,Bernd Büchner,Christian Hess###
(1178900, 1178900)
 At temperatures above long-range magneticordering T<missing VAR>gtrsim T<missing VAR>Napprox8 K, we observe with an applied magnetic fieldB perpendicular to the honeycomb layers a sizeable positive transversal heatconductivity kappaxy which increases linearly with B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 30, 'K', 1]

K
###Large Thermal Hall Effect in $α$-RuCl$_3$: Evidence for Heat Transport by Kitaev-Heisenberg Paramagnons|Richard Hentrich,Maria Roslova,Anna Isaeva,Thomas Doert,Wolfram Brenig,Bernd Büchner,Christian Hess###
(1178954, 1178954)
 Upon raising thetemperature, kappaxy(T) increases strongly, exhibits a broad maximum ataround 30 K, and eventually becomes negligible at T<missing VAR>gtrsim 125 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 30, 'K', 0]

RuCl3
###Large Thermal Hall Effect in $α$-RuCl$_3$: Evidence for Heat Transport by Kitaev-Heisenberg Paramagnons|Richard Hentrich,Maria Roslova,Anna Isaeva,Thomas Doert,Wolfram Brenig,Bernd Büchner,Christian Hess###
(1179051, 1179053)
 Thus, our findings provide clear-cutevidence for longitudinal and transverse magnetic heat transport and underpinthe unconventional nature of the quasiparticles in the paramagnetic phase ofalpha-RuCl3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 30, 'K', 2]

B
###High density carriers at a strongly coupled graphene-topological insulator interface|Ayelet Zalic,Tom Dvir,Hadar Steinberg###
(1179104, 1179104)
 We report on a strongly coupled bilayer graphene (BLG) - bise device with ajunction resistance of less than 1.5 kOmegamum<missing VAR>2.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 1.5, 'k', 0],[205.0, -2, ',', 3]

BaFe2
###Magnetotransport properties in the magnetic phase of BaFe$_{2-x}$T$_x$As$_2$ (T = Co,Ni): A magnetic excitations approach|J. P. Peña,M. M. Piva,P. F. S. Rosa,P. G. Pagliuso,C. Adriano,T. Grant,Z. Fisk,E. Baggio-Saitovitch,P. Pureur###
(1179355, 1179357)
Magnetotransport properties in the magnetic phase of BaFe2-xTxAs2 (T<missing VAR>  Co,Ni) A magnetic excitations approach.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As2
###Magnetotransport properties in the magnetic phase of BaFe$_{2-x}$T$_x$As$_2$ (T = Co,Ni): A magnetic excitations approach|J. P. Peña,M. M. Piva,P. F. S. Rosa,P. G. Pagliuso,C. Adriano,T. Grant,Z. Fisk,E. Baggio-Saitovitch,P. Pureur###
(1179362, 1179363)
Magnetotransport properties in the magnetic phase of BaFe2-xTxAs2 (T<missing VAR>  Co,Ni) A magnetic excitations approach.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Magnetotransport properties in the magnetic phase of BaFe$_{2-x}$T$_x$As$_2$ (T = Co,Ni): A magnetic excitations approach|J. P. Peña,M. M. Piva,P. F. S. Rosa,P. G. Pagliuso,C. Adriano,T. Grant,Z. Fisk,E. Baggio-Saitovitch,P. Pureur###
(1179369, 1179369)
Magnetotransport properties in the magnetic phase of BaFe2-xTxAs2 (T<missing VAR>  Co,Ni) A magnetic excitations approach.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Magnetotransport properties in the magnetic phase of BaFe$_{2-x}$T$_x$As$_2$ (T = Co,Ni): A magnetic excitations approach|J. P. Peña,M. M. Piva,P. F. S. Rosa,P. G. Pagliuso,C. Adriano,T. Grant,Z. Fisk,E. Baggio-Saitovitch,P. Pureur###
(1179371, 1179371)
Magnetotransport properties in the magnetic phase of BaFe2-xTxAs2 (T<missing VAR>  Co,Ni) A magnetic excitations approach.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Magnetotransport properties in the magnetic phase of BaFe$_{2-x}$T$_x$As$_2$ (T = Co,Ni): A magnetic excitations approach|J. P. Peña,M. M. Piva,P. F. S. Rosa,P. G. Pagliuso,C. Adriano,T. Grant,Z. Fisk,E. Baggio-Saitovitch,P. Pureur###
(1179421, 1179421)
 Because of their complex Fermi surfaces, the identification of the physicalphenomena contributing to electronic scattering in the Fe-based superconductorsis a difficult task.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BaFe2
###Magnetotransport properties in the magnetic phase of BaFe$_{2-x}$T$_x$As$_2$ (T = Co,Ni): A magnetic excitations approach|J. P. Peña,M. M. Piva,P. F. S. Rosa,P. G. Pagliuso,C. Adriano,T. Grant,Z. Fisk,E. Baggio-Saitovitch,P. Pureur###
(1179471, 1179473)
 Here, we report on the electrical resistivity,magnetoresistance, and Hall effect in two series of BaFe2-xTxAs2 (T<missing VAR> Co, Ni) crystals with different values of x<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As2
###Magnetotransport properties in the magnetic phase of BaFe$_{2-x}$T$_x$As$_2$ (T = Co,Ni): A magnetic excitations approach|J. P. Peña,M. M. Piva,P. F. S. Rosa,P. G. Pagliuso,C. Adriano,T. Grant,Z. Fisk,E. Baggio-Saitovitch,P. Pureur###
(1179478, 1179479)
 Here, we report on the electrical resistivity,magnetoresistance, and Hall effect in two series of BaFe2-xTxAs2 (T<missing VAR> Co, Ni) crystals with different values of x<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Magnetotransport properties in the magnetic phase of BaFe$_{2-x}$T$_x$As$_2$ (T = Co,Ni): A magnetic excitations approach|J. P. Peña,M. M. Piva,P. F. S. Rosa,P. G. Pagliuso,C. Adriano,T. Grant,Z. Fisk,E. Baggio-Saitovitch,P. Pureur###
(1179486, 1179486)
 Here, we report on the electrical resistivity,magnetoresistance, and Hall effect in two series of BaFe2-xTxAs2 (T<missing VAR> Co, Ni) crystals with different values of x<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Magnetotransport properties in the magnetic phase of BaFe$_{2-x}$T$_x$As$_2$ (T = Co,Ni): A magnetic excitations approach|J. P. Peña,M. M. Piva,P. F. S. Rosa,P. G. Pagliuso,C. Adriano,T. Grant,Z. Fisk,E. Baggio-Saitovitch,P. Pureur###
(1179489, 1179489)
 Here, we report on the electrical resistivity,magnetoresistance, and Hall effect in two series of BaFe2-xTxAs2 (T<missing VAR> Co, Ni) crystals with different values of x<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuCd2Sb2
###Magnetic and electronic structure of the layered rare-earth pnictide EuCd$_2$Sb$_2$|J. -R. Soh,C. Donnerer,K. M. Hughes,E. Schierle,E. Weschke,D. Prabhakaran,A. T. Boothroyd###
(1179695, 1179699)
Magnetic and electronic structure of the layered rare-earth pnictide EuCd2Sb2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 7.4, 'K', 1],[76.0, 0, ',', 1],[78.0, 0, ',', 1]

S
###Magnetic and electronic structure of the layered rare-earth pnictide EuCd$_2$Sb$_2$|J. -R. Soh,C. Donnerer,K. M. Hughes,E. Schierle,E. Weschke,D. Prabhakaran,A. T. Boothroyd###
(1179716, 1179716)
 Resonant elastic X<missing VAR>-ray scattering (REXS) at the Eu M<missing VAR>5 edge reveals anantiferromagnetic structure in layered EuCd2Sb2 at temperatures belowT<missing VAR>textrmN  7.4 K with a magnetic propagation vector of (0,0,1/2) andspins in the basal plane.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 7.4, 'K', 0],[59.0, 0, ',', 0],[61.0, 0, ',', 0]

Eu
###Magnetic and electronic structure of the layered rare-earth pnictide EuCd$_2$Sb$_2$|J. -R. Soh,C. Donnerer,K. M. Hughes,E. Schierle,E. Weschke,D. Prabhakaran,A. T. Boothroyd###
(1179723, 1179723)
 Resonant elastic X<missing VAR>-ray scattering (REXS) at the Eu M<missing VAR>5 edge reveals anantiferromagnetic structure in layered EuCd2Sb2 at temperatures belowT<missing VAR>textrmN  7.4 K with a magnetic propagation vector of (0,0,1/2) andspins in the basal plane.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 7.4, 'K', 0],[52.0, 0, ',', 0],[54.0, 0, ',', 0]

EuCd2Sb2
###Magnetic and electronic structure of the layered rare-earth pnictide EuCd$_2$Sb$_2$|J. -R. Soh,C. Donnerer,K. M. Hughes,E. Schierle,E. Weschke,D. Prabhakaran,A. T. Boothroyd###
(1179743, 1179747)
 Resonant elastic X<missing VAR>-ray scattering (REXS) at the Eu M<missing VAR>5 edge reveals anantiferromagnetic structure in layered EuCd2Sb2 at temperatures belowT<missing VAR>textrmN  7.4 K with a magnetic propagation vector of (0,0,1/2) andspins in the basal plane.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 7.4, 'K', 0],[28.0, 0, ',', 0],[30.0, 0, ',', 0]

N
###Magnetic and electronic structure of the layered rare-earth pnictide EuCd$_2$Sb$_2$|J. -R. Soh,C. Donnerer,K. M. Hughes,E. Schierle,E. Weschke,D. Prabhakaran,A. T. Boothroyd###
(1179758, 1179758)
 Resonant elastic X<missing VAR>-ray scattering (REXS) at the Eu M<missing VAR>5 edge reveals anantiferromagnetic structure in layered EuCd2Sb2 at temperatures belowT<missing VAR>textrmN  7.4 K with a magnetic propagation vector of (0,0,1/2) andspins in the basal plane.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 7.4, 'K', 0],[17.0, 0, ',', 0],[19.0, 0, ',', 0]

S
###Magnetic and electronic structure of the layered rare-earth pnictide EuCd$_2$Sb$_2$|J. -R. Soh,C. Donnerer,K. M. Hughes,E. Schierle,E. Weschke,D. Prabhakaran,A. T. Boothroyd###
(1179807, 1179807)
 Magneto-transport and REXS measurements with anin-plane magnetic field show that features in the magnetoresistance arecorrelated with changes in the magnetic structure induced by the field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 7.4, 'K', 1],[32.0, 0, ',', 1],[30.0, 0, ',', 1]

V
###Magnetic and electronic structure of the layered rare-earth pnictide EuCd$_2$Sb$_2$|J. -R. Soh,C. Donnerer,K. M. Hughes,E. Schierle,E. Weschke,D. Prabhakaran,A. T. Boothroyd###
(1179927, 1179927)
 Abinitio electronic structure calculations predict that the observed spinstructure gives rise to a gapped Dirac point close to the Fermi level with agap of Delta E<missing VAR> sim0.01 e<missing VAR>V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 7.4, 'K', 2],[152.0, 0, ',', 2],[150.0, 0, ',', 2]

Eu
###Magnetic and electronic structure of the layered rare-earth pnictide EuCd$_2$Sb$_2$|J. -R. Soh,C. Donnerer,K. M. Hughes,E. Schierle,E. Weschke,D. Prabhakaran,A. T. Boothroyd###
(1179946, 1179946)
 The results of this study indicate that the Euspins are coupled to conduction electron states near the Dirac point.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, 7.4, 'K', 3],[171.0, 0, ',', 3],[169.0, 0, ',', 3]

CeCo1-xFe
###Complex magnetism and non-Fermi liquid state in the vicinity of the quantum critical point in the CeCo$_{1-x}$Fe$_x$Ge$_3$ series|P. Skokowski,K. Synoradzki,T. Toliński###
(1180014, 1180019)
Complex magnetism and non-Fermi liquid state in the vicinity of the quantum critical point in the CeCo1-xFex<missing VAR>Ge3 series.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[73.0, 0, 'K', 1],[211.0, 0.6, ',', 3]

Ge3
###Complex magnetism and non-Fermi liquid state in the vicinity of the quantum critical point in the CeCo$_{1-x}$Fe$_x$Ge$_3$ series|P. Skokowski,K. Synoradzki,T. Toliński###
(1180021, 1180022)
Complex magnetism and non-Fermi liquid state in the vicinity of the quantum critical point in the CeCo1-xFex<missing VAR>Ge3 series.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 0, 'K', 1],[208.0, 0.6, ',', 3]

CeCo1-xFe
###Complex magnetism and non-Fermi liquid state in the vicinity of the quantum critical point in the CeCo$_{1-x}$Fe$_x$Ge$_3$ series|P. Skokowski,K. Synoradzki,T. Toliński###
(1180039, 1180044)
 We report extensive studies on the CeCo1-xFex<missing VAR>Ge3 alloys, whichshow quantum critical point (Q<missing VAR>CP) due to damping the antiferromagnetic order inCeCoGe3 down to 0 K by doping with the paramagnetic CeFeGe3 compound.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[48.0, 0, 'K', 0],[186.0, 0.6, ',', 2]

Ge3
###Complex magnetism and non-Fermi liquid state in the vicinity of the quantum critical point in the CeCo$_{1-x}$Fe$_x$Ge$_3$ series|P. Skokowski,K. Synoradzki,T. Toliński###
(1180046, 1180047)
 We report extensive studies on the CeCo1-xFex<missing VAR>Ge3 alloys, whichshow quantum critical point (Q<missing VAR>CP) due to damping the antiferromagnetic order inCeCoGe3 down to 0 K by doping with the paramagnetic CeFeGe3 compound.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 0, 'K', 0],[183.0, 0.6, ',', 2]

P
###Complex magnetism and non-Fermi liquid state in the vicinity of the quantum critical point in the CeCo$_{1-x}$Fe$_x$Ge$_3$ series|P. Skokowski,K. Synoradzki,T. Toliński###
(1180066, 1180066)
 We report extensive studies on the CeCo1-xFex<missing VAR>Ge3 alloys, whichshow quantum critical point (Q<missing VAR>CP) due to damping the antiferromagnetic order inCeCoGe3 down to 0 K by doping with the paramagnetic CeFeGe3 compound.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 0, 'K', 0],[164.0, 0.6, ',', 2]

CeCoGe3
###Complex magnetism and non-Fermi liquid state in the vicinity of the quantum critical point in the CeCo$_{1-x}$Fe$_x$Ge$_3$ series|P. Skokowski,K. Synoradzki,T. Toliński###
(1180084, 1180087)
 We report extensive studies on the CeCo1-xFex<missing VAR>Ge3 alloys, whichshow quantum critical point (Q<missing VAR>CP) due to damping the antiferromagnetic order inCeCoGe3 down to 0 K by doping with the paramagnetic CeFeGe3 compound.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 0, 'K', 0],[143.0, 0.6, ',', 2]

CeFeGe3
###Complex magnetism and non-Fermi liquid state in the vicinity of the quantum critical point in the CeCo$_{1-x}$Fe$_x$Ge$_3$ series|P. Skokowski,K. Synoradzki,T. Toliński###
(1180104, 1180107)
 We report extensive studies on the CeCo1-xFex<missing VAR>Ge3 alloys, whichshow quantum critical point (Q<missing VAR>CP) due to damping the antiferromagnetic order inCeCoGe3 down to 0 K by doping with the paramagnetic CeFeGe3 compound.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 0, 'K', 0],[123.0, 0.6, ',', 2]

CP
###Complex magnetism and non-Fermi liquid state in the vicinity of the quantum critical point in the CeCo$_{1-x}$Fe$_x$Ge$_3$ series|P. Skokowski,K. Synoradzki,T. Toliński###
(1180120, 1180121)
 Thepresence of Q<missing VAR>CP is confirmed by detecting the non-Fermi liquid behavior (NFL)using a wide range of the experimental methods magnetic susceptibility,specific heat, electrical resistivity, magnetoresistance, and thermoelectricpower.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 0, 'K', 1],[109.0, 0.6, ',', 1]

NF
###Complex magnetism and non-Fermi liquid state in the vicinity of the quantum critical point in the CeCo$_{1-x}$Fe$_x$Ge$_3$ series|P. Skokowski,K. Synoradzki,T. Toliński###
(1180142, 1180143)
 Thepresence of Q<missing VAR>CP is confirmed by detecting the non-Fermi liquid behavior (NFL)using a wide range of the experimental methods magnetic susceptibility,specific heat, electrical resistivity, magnetoresistance, and thermoelectricpower.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 0, 'K', 1],[87.0, 0.6, ',', 1]

In
###Complex magnetism and non-Fermi liquid state in the vicinity of the quantum critical point in the CeCo$_{1-x}$Fe$_x$Ge$_3$ series|P. Skokowski,K. Synoradzki,T. Toliński###
(1180191, 1180191)
 In the case of the thermoelectric power we find a clear enhancement ofthe Seebeck coefficient for x<missing VAR> around 0.6, i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 0, 'K', 2],[39.0, 0.6, ',', 0]

CP
###Complex magnetism and non-Fermi liquid state in the vicinity of the quantum critical point in the CeCo$_{1-x}$Fe$_x$Ge$_3$ series|P. Skokowski,K. Synoradzki,T. Toliński###
(1180247, 1180248)
 in the neighborhood of Q<missing VAR>CP.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 0, 'K', 3],[17.0, 0.6, ',', 1]

CeCo1-xFe
###Complex magnetism and non-Fermi liquid state in the vicinity of the quantum critical point in the CeCo$_{1-x}$Fe$_x$Ge$_3$ series|P. Skokowski,K. Synoradzki,T. Toliński###
(1180284, 1180289)
Finally, the different complementary studies enabled construction of thecomplex magnetic phase diagram for the CeCo1-xFex<missing VAR>Ge3 system,including the energy scale imposed by the crystal electric field splitting ofthe Ce ground state.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[192.0, 0, 'K', 4],[54.0, 0.6, ',', 2]

Ge3
###Complex magnetism and non-Fermi liquid state in the vicinity of the quantum critical point in the CeCo$_{1-x}$Fe$_x$Ge$_3$ series|P. Skokowski,K. Synoradzki,T. Toliński###
(1180291, 1180292)
Finally, the different complementary studies enabled construction of thecomplex magnetic phase diagram for the CeCo1-xFex<missing VAR>Ge3 system,including the energy scale imposed by the crystal electric field splitting ofthe Ce ground state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[199.0, 0, 'K', 4],[61.0, 0.6, ',', 2]

Ce
###Complex magnetism and non-Fermi liquid state in the vicinity of the quantum critical point in the CeCo$_{1-x}$Fe$_x$Ge$_3$ series|P. Skokowski,K. Synoradzki,T. Toliński###
(1180325, 1180325)
Finally, the different complementary studies enabled construction of thecomplex magnetic phase diagram for the CeCo1-xFex<missing VAR>Ge3 system,including the energy scale imposed by the crystal electric field splitting ofthe Ce ground state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[233.0, 0, 'K', 4],[95.0, 0.6, ',', 2]

TbPdBi
###Superconductivity in half-Heusler compound TbPdBi|H. Xiao,T. Hu,W. Liu,Y. L. Zhu,P. G. Li,G. Mu,J. Su,K. Li,Z. Q. Mao###
(1180350, 1180352)
Superconductivity in half-Heusler compound TbPdBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 100, 'K', 2],[125.0, 1.7, 'K', 4],[144.0, 5.5, 'K', 4]

TbPdBi
###Superconductivity in half-Heusler compound TbPdBi|H. Xiao,T. Hu,W. Liu,Y. L. Zhu,P. G. Li,G. Mu,J. Su,K. Li,Z. Q. Mao###
(1180369, 1180371)
 We have studied the half-Heusler compound TbPdBi through resistivity,magnetization, Hall effect and heat capacity measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 100, 'K', 1],[106.0, 1.7, 'K', 3],[125.0, 5.5, 'K', 3]

H
###Superconductivity in half-Heusler compound TbPdBi|H. Xiao,T. Hu,W. Liu,Y. L. Zhu,P. G. Li,G. Mu,J. Su,K. Li,Z. Q. Mao###
(1180507, 1180507)
 The upper critical field Hc<missing VAR>2 shows anunusual linear temperature dependence, implying unconventionalsuperconductivity.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 100, 'K', 3],[30.0, 1.7, 'K', 1],[11.0, 5.5, 'K', 1]

TbPdBi
###Superconductivity in half-Heusler compound TbPdBi|H. Xiao,T. Hu,W. Liu,Y. L. Zhu,P. G. Li,G. Mu,J. Su,K. Li,Z. Q. Mao###
(1180589, 1180591)
 These findings establish TbPdBi as aplatform for study of the interplay between superconductivity, magnetism andnon-trivial band topology.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 100, 'K', 5],[112.0, 1.7, 'K', 3],[93.0, 5.5, 'K', 3]

HOP
###Influence of Interfaces on the Transport Properties of Graphite revealed by Nanometer Thickness Reduction|Mahsa Zoraghi,José Barzola-Quiquia,Markus Stiller,Pablo D. Esquinazi,Irina Estrela-Lopis###
(1180724, 1180726)
 Using oxygen plasma etching we decreasedthe thickness of highly oriented pyrolytic graphite (HOPG) microflakes fromsim 100nm to sim 20nm systematically.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HOP
###Influence of Interfaces on the Transport Properties of Graphite revealed by Nanometer Thickness Reduction|Mahsa Zoraghi,José Barzola-Quiquia,Markus Stiller,Pablo D. Esquinazi,Irina Estrela-Lopis###
(1180879, 1180881)
 The resultsindicate that HOPG<missing VAR> samples are inhomogeneous materials, in agreement withscanning transmission electron microscopy images and X<missing VAR>-ray diffraction data.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

US
###Large unidirectional spin Hall and Rashba-Edelstein magnetoresistance in topological insulator/magnetic insulator heterostructures|Yang Lv,James Kally,Tao Liu,Protyush Sahu,Mingzhong Wu,Nitin Samarth,Jian-Ping Wang###
(1181052, 1181053)
 Thanks to its unique symmetry, the unidirectional spin Hall andRashba-Edelstein magnetoresistance (USRMR) is of great fundamental andpractical interest, particularly in the context of reading magnetization statesin two-terminal spin-orbit torque switching memory and logic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

US
###Large unidirectional spin Hall and Rashba-Edelstein magnetoresistance in topological insulator/magnetic insulator heterostructures|Yang Lv,James Kally,Tao Liu,Protyush Sahu,Mingzhong Wu,Nitin Samarth,Jian-Ping Wang###
(1181132, 1181133)
 Recentstudies show that topological insulators could improve USRMR amplitude.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

US
###Large unidirectional spin Hall and Rashba-Edelstein magnetoresistance in topological insulator/magnetic insulator heterostructures|Yang Lv,James Kally,Tao Liu,Protyush Sahu,Mingzhong Wu,Nitin Samarth,Jian-Ping Wang###
(1181232, 1181233)
 Here, we report largeUSRMR in a new material category - magnetic insulator/topological insulatorbi-layered heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

US
###Large unidirectional spin Hall and Rashba-Edelstein magnetoresistance in topological insulator/magnetic insulator heterostructures|Yang Lv,James Kally,Tao Liu,Protyush Sahu,Mingzhong Wu,Nitin Samarth,Jian-Ping Wang###
(1181272, 1181273)
 Such structures exhibit USRMR that is about anorder of magnitude larger than the highest values reported so far in all-metalTa/Co bilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ta/Co
###Large unidirectional spin Hall and Rashba-Edelstein magnetoresistance in topological insulator/magnetic insulator heterostructures|Yang Lv,James Kally,Tao Liu,Protyush Sahu,Mingzhong Wu,Nitin Samarth,Jian-Ping Wang###
(1181316, 1181318)
 Such structures exhibit USRMR that is about anorder of magnitude larger than the highest values reported so far in all-metalTa/Co bilayers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

US
###Large unidirectional spin Hall and Rashba-Edelstein magnetoresistance in topological insulator/magnetic insulator heterostructures|Yang Lv,James Kally,Tao Liu,Protyush Sahu,Mingzhong Wu,Nitin Samarth,Jian-Ping Wang###
(1181361, 1181362)
 We also demonstrate current-induced magnetization switchingaided by an Oersted field, and electrical read out by the USRMR, as a prototypememory device.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Circuit-Level Evaluation of the Generation of Truly Random Bits with Superparamagnetic Tunnel Junctions|Damir Vodenicarevic,Nicolas Locatelli,Alice Mizrahi,Tifenn Hirtzlin,Joseph S. Friedman,Julie Grollier,Damien Querlioz###
(1181594, 1181594)
 In this work, we evaluate a circuit solution for reading the stateof superparamagnetic tunnel junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Circuit-Level Evaluation of the Generation of Truly Random Bits with Superparamagnetic Tunnel Junctions|Damir Vodenicarevic,Nicolas Locatelli,Alice Mizrahi,Tifenn Hirtzlin,Joseph S. Friedman,Julie Grollier,Damien Querlioz###
(1181757, 1181757)
 These results suggest thatsuperparamagnetic tunnel junctions could generate truly random bits at 20fJ/bit, including overheads, orders of magnitudes below CM<missing VAR>OS-based solutions.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OS
###Circuit-Level Evaluation of the Generation of Truly Random Bits with Superparamagnetic Tunnel Junctions|Damir Vodenicarevic,Nicolas Locatelli,Alice Mizrahi,Tifenn Hirtzlin,Joseph S. Friedman,Julie Grollier,Damien Querlioz###
(1181759, 1181760)
 These results suggest thatsuperparamagnetic tunnel junctions could generate truly random bits at 20fJ/bit, including overheads, orders of magnitudes below CM<missing VAR>OS-based solutions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Electrical control of the Zeeman spin splitting in two-dimensional hole systems|Elizabeth Marcellina,Ashwin Srinivasan,Dmitry Miserev,Andrew Croxall,David Ritchie,Ian Farrer,Oleg Sushkov,Dimitrie Culcer,Alex Hamilton###
(1181862, 1181863)
 Using a two-dimensional hole system in a GaAs quantum well, wedemonstrate a new mechanism of electrically controlling the Zeeman splitting,which is achieved through altering the hole wave vector k<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W2As3
###Quantum transport in a compensated semimetal W2As3 with nontrivial Z2 indices|Yupeng Li,Chenchao Xu,Mingsong Shen,Jinhua Wang,Xiaohui Yang,Xiaojun Yang,Zengwei Zhu,Chao Cao,Zhu-An Xu###
(1182145, 1182148)
Quantum transport in a compensated semimetal W2As3 with nontrivial Z<missing VAR>2 indices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 1, ';', 3],[161.0, 3, 'K', 4],[184.0, 115, 'at', 4],[185.0, 3, 'K', 4]

W2As3
###Quantum transport in a compensated semimetal W2As3 with nontrivial Z2 indices|Yupeng Li,Chenchao Xu,Mingsong Shen,Jinhua Wang,Xiaohui Yang,Xiaojun Yang,Zengwei Zhu,Chao Cao,Zhu-An Xu###
(1182170, 1182173)
 We report a topological semimetal W2As3 with a space group C2/m<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 1, ';', 2],[136.0, 3, 'K', 3],[159.0, 115, 'at', 3],[160.0, 3, 'K', 3]

C2
###Quantum transport in a compensated semimetal W2As3 with nontrivial Z2 indices|Yupeng Li,Chenchao Xu,Mingsong Shen,Jinhua Wang,Xiaohui Yang,Xiaojun Yang,Zengwei Zhu,Chao Cao,Zhu-An Xu###
(1182183, 1182184)
 We report a topological semimetal W2As3 with a space group C2/m<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 1, ';', 2],[125.0, 3, 'K', 3],[148.0, 115, 'at', 3],[149.0, 3, 'K', 3]

B
###Quantum transport in a compensated semimetal W2As3 with nontrivial Z2 indices|Yupeng Li,Chenchao Xu,Mingsong Shen,Jinhua Wang,Xiaohui Yang,Xiaojun Yang,Zengwei Zhu,Chao Cao,Zhu-An Xu###
(1182300, 1182300)
 From the magnetotransport measurements, nearly quadratic fielddependence of magnetoresistance (MR) (B  [200]) at 3 K indicates anelectron-hole compensated compound whose longitudinal MR reaches 115 at 3 K and15 T<missing VAR>.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 1, ';', 1],[9.0, 3, 'K', 0],[32.0, 115, 'at', 0],[33.0, 3, 'K', 0]

In
###Quantum transport in a compensated semimetal W2As3 with nontrivial Z2 indices|Yupeng Li,Chenchao Xu,Mingsong Shen,Jinhua Wang,Xiaohui Yang,Xiaojun Yang,Zengwei Zhu,Chao Cao,Zhu-An Xu###
(1182343, 1182343)
 In addition, multiband features are detected from the high-magnetic-fieldShubnikov-de Haas (SdH) oscillation, Hall resistivity, and band calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 1, ';', 2],[34.0, 3, 'K', 1],[11.0, 115, 'at', 1],[10.0, 3, 'K', 1]

H
###Quantum transport in a compensated semimetal W2As3 with nontrivial Z2 indices|Yupeng Li,Chenchao Xu,Mingsong Shen,Jinhua Wang,Xiaohui Yang,Xiaojun Yang,Zengwei Zhu,Chao Cao,Zhu-An Xu###
(1182375, 1182375)
 In addition, multiband features are detected from the high-magnetic-fieldShubnikov-de Haas (SdH) oscillation, Hall resistivity, and band calculations.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 1, ';', 2],[66.0, 3, 'K', 1],[43.0, 115, 'at', 1],[42.0, 3, 'K', 1]

W2As3
###Quantum transport in a compensated semimetal W2As3 with nontrivial Z2 indices|Yupeng Li,Chenchao Xu,Mingsong Shen,Jinhua Wang,Xiaohui Yang,Xiaojun Yang,Zengwei Zhu,Chao Cao,Zhu-An Xu###
(1182469, 1182472)
 Our experiments manifest that the transport properties of W2As3are in good agreement with the theoretical calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[223.0, 1, ';', 5],[160.0, 3, 'K', 4],[137.0, 115, 'at', 4],[136.0, 3, 'K', 4]

HfTe5
###Log-periodic quantum magneto-oscillations and discrete scale invariance in topological material HfTe5|Huichao Wang,Yanzhao Liu,Yongjie Liu,Chuanying Xi,Junfeng Wang,Jun Liu,Yong Wang,Liang Li,Shu Ping Lau,Mingliang Tian,Jiaqiang Yan,David Mandrus,Ji-Yan Dai,Haiwen Liu,X. C. Xie,Jian Wang###
(1182524, 1182526)
Log-periodic quantum magneto-oscillations and discrete scale invariance in topological material HfTe5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Log-periodic quantum magneto-oscillations and discrete scale invariance in topological material HfTe5|Huichao Wang,Yanzhao Liu,Yongjie Liu,Chuanying Xi,Junfeng Wang,Jun Liu,Yong Wang,Liang Li,Shu Ping Lau,Mingliang Tian,Jiaqiang Yan,David Mandrus,Ji-Yan Dai,Haiwen Liu,X. C. Xie,Jian Wang###
(1182538, 1182538)
 Discrete scale invariance (D<missing VAR>SI) is a phenomenon featuring intriguinglog-periodicity which can be rarely observed in quantum systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HfTe5
###Log-periodic quantum magneto-oscillations and discrete scale invariance in topological material HfTe5|Huichao Wang,Yanzhao Liu,Yongjie Liu,Chuanying Xi,Junfeng Wang,Jun Liu,Yong Wang,Liang Li,Shu Ping Lau,Mingliang Tian,Jiaqiang Yan,David Mandrus,Ji-Yan Dai,Haiwen Liu,X. C. Xie,Jian Wang###
(1182612, 1182614)
 Here we reportthe log-periodic quantum oscillations in the magnetoresistance (MR) and theHall traces of HfTe5 crystals, which reveals the appearance of D<missing VAR>SI.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SI
###Log-periodic quantum magneto-oscillations and discrete scale invariance in topological material HfTe5|Huichao Wang,Yanzhao Liu,Yongjie Liu,Chuanying Xi,Junfeng Wang,Jun Liu,Yong Wang,Liang Li,Shu Ping Lau,Mingliang Tian,Jiaqiang Yan,David Mandrus,Ji-Yan Dai,Haiwen Liu,X. C. Xie,Jian Wang###
(1182630, 1182631)
 Here we reportthe log-periodic quantum oscillations in the magnetoresistance (MR) and theHall traces of HfTe5 crystals, which reveals the appearance of D<missing VAR>SI.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Log-periodic quantum magneto-oscillations and discrete scale invariance in topological material HfTe5|Huichao Wang,Yanzhao Liu,Yongjie Liu,Chuanying Xi,Junfeng Wang,Jun Liu,Yong Wang,Liang Li,Shu Ping Lau,Mingliang Tian,Jiaqiang Yan,David Mandrus,Ji-Yan Dai,Haiwen Liu,X. C. Xie,Jian Wang###
(1182646, 1182646)
 Theoscillations show the same logB-periodicity in the behavior of MR and Hall,indicating an overall effect of the D<missing VAR>SI on the transport properties.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SI
###Log-periodic quantum magneto-oscillations and discrete scale invariance in topological material HfTe5|Huichao Wang,Yanzhao Liu,Yongjie Liu,Chuanying Xi,Junfeng Wang,Jun Liu,Yong Wang,Liang Li,Shu Ping Lau,Mingliang Tian,Jiaqiang Yan,David Mandrus,Ji-Yan Dai,Haiwen Liu,X. C. Xie,Jian Wang###
(1182680, 1182681)
 Theoscillations show the same logB-periodicity in the behavior of MR and Hall,indicating an overall effect of the D<missing VAR>SI on the transport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SI
###Log-periodic quantum magneto-oscillations and discrete scale invariance in topological material HfTe5|Huichao Wang,Yanzhao Liu,Yongjie Liu,Chuanying Xi,Junfeng Wang,Jun Liu,Yong Wang,Liang Li,Shu Ping Lau,Mingliang Tian,Jiaqiang Yan,David Mandrus,Ji-Yan Dai,Haiwen Liu,X. C. Xie,Jian Wang###
(1182699, 1182700)
 Moreover,the D<missing VAR>SI feature in the Hall resistance signals its close relation to thecarriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SI
###Log-periodic quantum magneto-oscillations and discrete scale invariance in topological material HfTe5|Huichao Wang,Yanzhao Liu,Yongjie Liu,Chuanying Xi,Junfeng Wang,Jun Liu,Yong Wang,Liang Li,Shu Ping Lau,Mingliang Tian,Jiaqiang Yan,David Mandrus,Ji-Yan Dai,Haiwen Liu,X. C. Xie,Jian Wang###
(1182763, 1182764)
 Combined with theoretical simulations, we further clarify the originof the log-periodic oscillations and the D<missing VAR>SI in the topological materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SI
###Log-periodic quantum magneto-oscillations and discrete scale invariance in topological material HfTe5|Huichao Wang,Yanzhao Liu,Yongjie Liu,Chuanying Xi,Junfeng Wang,Jun Liu,Yong Wang,Liang Li,Shu Ping Lau,Mingliang Tian,Jiaqiang Yan,David Mandrus,Ji-Yan Dai,Haiwen Liu,X. C. Xie,Jian Wang###
(1182791, 1182792)
 Ourwork evidences the universality of the D<missing VAR>SI in the Dirac materials and paves wayfor the full understanding of the novel phenomenon.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoPt
###Large nonvolatile control of magnetic anisotropy in CoPt by a ferroelectric ZnO-based tunneling barrier|Muftah Al-Mahdawi,Mohamed Belmoubarik,Masao Obata,Daiki Yoshikawa,Hideyuki Sato,Tomohiro Nozaki,Tatsuki Oda,Masashi Sahashi###
(1182848, 1182849)
Large nonvolatile control of magnetic anisotropy in CoPt by a ferroelectric ZnO-based tunneling barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZnO
###Large nonvolatile control of magnetic anisotropy in CoPt by a ferroelectric ZnO-based tunneling barrier|Muftah Al-Mahdawi,Mohamed Belmoubarik,Masao Obata,Daiki Yoshikawa,Hideyuki Sato,Tomohiro Nozaki,Tatsuki Oda,Masashi Sahashi###
(1182857, 1182858)
Large nonvolatile control of magnetic anisotropy in CoPt by a ferroelectric ZnO-based tunneling barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoPt/ZnO
###Large nonvolatile control of magnetic anisotropy in CoPt by a ferroelectric ZnO-based tunneling barrier|Muftah Al-Mahdawi,Mohamed Belmoubarik,Masao Obata,Daiki Yoshikawa,Hideyuki Sato,Tomohiro Nozaki,Tatsuki Oda,Masashi Sahashi###
(1182934, 1182938)
 By first-principlescalculations, we show a large nonvolatile control of magnetic anisotropy inferromagnetic/ferroelectric CoPt/ZnO interface.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

ZnO
###Large nonvolatile control of magnetic anisotropy in CoPt by a ferroelectric ZnO-based tunneling barrier|Muftah Al-Mahdawi,Mohamed Belmoubarik,Masao Obata,Daiki Yoshikawa,Hideyuki Sato,Tomohiro Nozaki,Tatsuki Oda,Masashi Sahashi###
(1182956, 1182957)
 Using the switched electricpolarization of ZnO, the density-of-states and magnetic anisotropy at the CoPtsurface show a large change.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoPt
###Large nonvolatile control of magnetic anisotropy in CoPt by a ferroelectric ZnO-based tunneling barrier|Muftah Al-Mahdawi,Mohamed Belmoubarik,Masao Obata,Daiki Yoshikawa,Hideyuki Sato,Tomohiro Nozaki,Tatsuki Oda,Masashi Sahashi###
(1182978, 1182979)
 Using the switched electricpolarization of ZnO, the density-of-states and magnetic anisotropy at the CoPtsurface show a large change.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co/Pt
###Large nonvolatile control of magnetic anisotropy in CoPt by a ferroelectric ZnO-based tunneling barrier|Muftah Al-Mahdawi,Mohamed Belmoubarik,Masao Obata,Daiki Yoshikawa,Hideyuki Sato,Tomohiro Nozaki,Tatsuki Oda,Masashi Sahashi###
(1183001, 1183003)
 Due to a strong Co/Pt orbitals hybridization and alarge spin-orbit coupling, a large control of magnetic anisotropy was found.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

CoPt/Mg
###Large nonvolatile control of magnetic anisotropy in CoPt by a ferroelectric ZnO-based tunneling barrier|Muftah Al-Mahdawi,Mohamed Belmoubarik,Masao Obata,Daiki Yoshikawa,Hideyuki Sato,Tomohiro Nozaki,Tatsuki Oda,Masashi Sahashi###
(1183068, 1183071)
 Weexperimentally measured the change of effective anisotropy by tunnelingresistance measurements in CoPt/Mg-doped ZnO/Co junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

ZnO/Co
###Large nonvolatile control of magnetic anisotropy in CoPt by a ferroelectric ZnO-based tunneling barrier|Muftah Al-Mahdawi,Mohamed Belmoubarik,Masao Obata,Daiki Yoshikawa,Hideyuki Sato,Tomohiro Nozaki,Tatsuki Oda,Masashi Sahashi###
(1183075, 1183078)
 Weexperimentally measured the change of effective anisotropy by tunnelingresistance measurements in CoPt/Mg-doped ZnO/Co junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Pt/NiO
###Spin Seebeck imaging of spin-torque switching in antiferromagnetic Pt/NiO heterostructures|Isaiah Gray,Takahiro Moriyama,Nikhil Sivadas,Gregory M. Stiehl,John T. Heron,Ryan Need,Brian J. Kirby,David H. Low,Katja C. Nowack,Darrell G. Schlom,Daniel C. Ralph,Teruo Ono,Gregory D. Fuchs###
(1183147, 1183150)
Spin Seebeck imaging of spin-torque switching in antiferromagnetic Pt/NiO heterostructures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

As
###Spin Seebeck imaging of spin-torque switching in antiferromagnetic Pt/NiO heterostructures|Isaiah Gray,Takahiro Moriyama,Nikhil Sivadas,Gregory M. Stiehl,John T. Heron,Ryan Need,Brian J. Kirby,David H. Low,Katja C. Nowack,Darrell G. Schlom,Daniel C. Ralph,Teruo Ono,Gregory D. Fuchs###
(1183155, 1183155)
 As electrical control of Neel order opens the door to reliableantiferromagnetic spintronic devices, understanding the microscopic mechanismsof antiferromagnetic switching is crucial.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Spin Seebeck imaging of spin-torque switching in antiferromagnetic Pt/NiO heterostructures|Isaiah Gray,Takahiro Moriyama,Nikhil Sivadas,Gregory M. Stiehl,John T. Heron,Ryan Need,Brian J. Kirby,David H. Low,Katja C. Nowack,Darrell G. Schlom,Daniel C. Ralph,Teruo Ono,Gregory D. Fuchs###
(1183163, 1183163)
 As electrical control of Neel order opens the door to reliableantiferromagnetic spintronic devices, understanding the microscopic mechanismsof antiferromagnetic switching is crucial.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Spin Seebeck imaging of spin-torque switching in antiferromagnetic Pt/NiO heterostructures|Isaiah Gray,Takahiro Moriyama,Nikhil Sivadas,Gregory M. Stiehl,John T. Heron,Ryan Need,Brian J. Kirby,David H. Low,Katja C. Nowack,Darrell G. Schlom,Daniel C. Ralph,Teruo Ono,Gregory D. Fuchs###
(1183261, 1183261)
 Spatially-resolved studies arenecessary to distinguish multiple nonuniform switching mechanisms; however,progress has been hindered by the lack of tabletop techniques to image theNeel order.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiO/Pt
###Spin Seebeck imaging of spin-torque switching in antiferromagnetic Pt/NiO heterostructures|Isaiah Gray,Takahiro Moriyama,Nikhil Sivadas,Gregory M. Stiehl,John T. Heron,Ryan Need,Brian J. Kirby,David H. Low,Katja C. Nowack,Darrell G. Schlom,Daniel C. Ralph,Teruo Ono,Gregory D. Fuchs###
(1183327, 1183330)
 We demonstrate spin Seebeck microscopy as a sensitive, table-topmethod for imaging antiferromagnetic order in thin films, and apply thistechnique to study spin-torque switching in NiO/Pt and Pt/NiO/Ptheterostructures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Pt/NiO/Pt
###Spin Seebeck imaging of spin-torque switching in antiferromagnetic Pt/NiO heterostructures|Isaiah Gray,Takahiro Moriyama,Nikhil Sivadas,Gregory M. Stiehl,John T. Heron,Ryan Need,Brian J. Kirby,David H. Low,Katja C. Nowack,Darrell G. Schlom,Daniel C. Ralph,Teruo Ono,Gregory D. Fuchs###
(1183334, 1183339)
 We demonstrate spin Seebeck microscopy as a sensitive, table-topmethod for imaging antiferromagnetic order in thin films, and apply thistechnique to study spin-torque switching in NiO/Pt and Pt/NiO/Ptheterostructures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

NiO
###Spin Seebeck imaging of spin-torque switching in antiferromagnetic Pt/NiO heterostructures|Isaiah Gray,Takahiro Moriyama,Nikhil Sivadas,Gregory M. Stiehl,John T. Heron,Ryan Need,Brian J. Kirby,David H. Low,Katja C. Nowack,Darrell G. Schlom,Daniel C. Ralph,Teruo Ono,Gregory D. Fuchs###
(1183364, 1183365)
 We establish the interfacial antiferromagnetic spin Seebeckeffect in NiO as a probe of surface Neel order, resolving antiferromagneticspin domains within crystalline twin domains.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Spin Seebeck imaging of spin-torque switching in antiferromagnetic Pt/NiO heterostructures|Isaiah Gray,Takahiro Moriyama,Nikhil Sivadas,Gregory M. Stiehl,John T. Heron,Ryan Need,Brian J. Kirby,David H. Low,Katja C. Nowack,Darrell G. Schlom,Daniel C. Ralph,Teruo Ono,Gregory D. Fuchs###
(1183377, 1183377)
 We establish the interfacial antiferromagnetic spin Seebeckeffect in NiO as a probe of surface Neel order, resolving antiferromagneticspin domains within crystalline twin domains.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Spin Seebeck imaging of spin-torque switching in antiferromagnetic Pt/NiO heterostructures|Isaiah Gray,Takahiro Moriyama,Nikhil Sivadas,Gregory M. Stiehl,John T. Heron,Ryan Need,Brian J. Kirby,David H. Low,Katja C. Nowack,Darrell G. Schlom,Daniel C. Ralph,Teruo Ono,Gregory D. Fuchs###
(1183477, 1183477)
 We correlate the changes in spinSeebeck images with electrical measurements of the average Neel orientationthrough the spin Hall magnetoresistance, confirming that we imageantiferromagnetic order.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TaAs
###Transport signatures of surface states in a Weyl semimetal: evidence of field driven Fermi arc interferometry|Nityan L. Nair,Marie-Eve Boulanger,Francis Laliberté,Sinead Griffin,Sanyum Channa,Anaëlle Legros,Sahim Benhabib,Cyril Proust,Jeffrey Neaton,Louis Taillefer,James G. Analytis###
(1183669, 1183670)
 Here we present a magnetoresistancestudy of high-quality samples of the prototypical Weyl semimetal, TaAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Negative longitudinal magnetoresistance in GaAs quantum wells|Jing Xu,Meng K. Ma,Maksim Sultanov,Zhi-Li Xiao,Yong-Lei Wang,Dafei Jin,Yang-Yang Lyu,Wei Zhang,Loren N. Pfeiffer,Ken W. West,Kirk W. Baldwin,Mansour Shayegan,Wai-Kwong Kwok###
(1183843, 1183844)
Negative longitudinal magnetoresistance in GaAs quantum wells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 9, 'Tesla', 4],[204.0, 5, 'K', 4]

N
###Negative longitudinal magnetoresistance in GaAs quantum wells|Jing Xu,Meng K. Ma,Maksim Sultanov,Zhi-Li Xiao,Yong-Lei Wang,Dafei Jin,Yang-Yang Lyu,Wei Zhang,Loren N. Pfeiffer,Ken W. West,Kirk W. Baldwin,Mansour Shayegan,Wai-Kwong Kwok###
(1183858, 1183858)
 Negative longitudinal magnetoresistances (NLMRs) have been recently observedin a variety of topological materials and often considered to be associatedwith Weyl fermions that have a defined chirality.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 9, 'Tesla', 3],[190.0, 5, 'K', 3]

N
###Negative longitudinal magnetoresistance in GaAs quantum wells|Jing Xu,Meng K. Ma,Maksim Sultanov,Zhi-Li Xiao,Yong-Lei Wang,Dafei Jin,Yang-Yang Lyu,Wei Zhang,Loren N. Pfeiffer,Ken W. West,Kirk W. Baldwin,Mansour Shayegan,Wai-Kwong Kwok###
(1183921, 1183921)
 Here we report NLMRs innon-Weyl GaAs quantum wells.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 9, 'Tesla', 2],[127.0, 5, 'K', 2]

GaAs
###Negative longitudinal magnetoresistance in GaAs quantum wells|Jing Xu,Meng K. Ma,Maksim Sultanov,Zhi-Li Xiao,Yong-Lei Wang,Dafei Jin,Yang-Yang Lyu,Wei Zhang,Loren N. Pfeiffer,Ken W. West,Kirk W. Baldwin,Mansour Shayegan,Wai-Kwong Kwok###
(1183933, 1183934)
 Here we report NLMRs innon-Weyl GaAs quantum wells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 9, 'Tesla', 2],[114.0, 5, 'K', 2]

In
###Negative longitudinal magnetoresistance in GaAs quantum wells|Jing Xu,Meng K. Ma,Maksim Sultanov,Zhi-Li Xiao,Yong-Lei Wang,Dafei Jin,Yang-Yang Lyu,Wei Zhang,Loren N. Pfeiffer,Ken W. West,Kirk W. Baldwin,Mansour Shayegan,Wai-Kwong Kwok###
(1183941, 1183941)
 In the absence of a magnetic field the quantumwells show a transition from semiconducting-like to metallic behaviour withdecreasing temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 9, 'Tesla', 1],[107.0, 5, 'K', 1]

N
###Negative longitudinal magnetoresistance in GaAs quantum wells|Jing Xu,Meng K. Ma,Maksim Sultanov,Zhi-Li Xiao,Yong-Lei Wang,Dafei Jin,Yang-Yang Lyu,Wei Zhang,Loren N. Pfeiffer,Ken W. West,Kirk W. Baldwin,Mansour Shayegan,Wai-Kwong Kwok###
(1183994, 1183994)
 We observed pronounced NLMRs up to 9 Tesla attemperatures above the transition and weak NLMRs in low magnetic fields attemperatures close to the transition and below 5 K.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 9, 'Tesla', 0],[54.0, 5, 'K', 0]

N
###Negative longitudinal magnetoresistance in GaAs quantum wells|Jing Xu,Meng K. Ma,Maksim Sultanov,Zhi-Li Xiao,Yong-Lei Wang,Dafei Jin,Yang-Yang Lyu,Wei Zhang,Loren N. Pfeiffer,Ken W. West,Kirk W. Baldwin,Mansour Shayegan,Wai-Kwong Kwok###
(1184019, 1184019)
 We observed pronounced NLMRs up to 9 Tesla attemperatures above the transition and weak NLMRs in low magnetic fields attemperatures close to the transition and below 5 K.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 9, 'Tesla', 0],[29.0, 5, 'K', 0]

N
###Negative longitudinal magnetoresistance in GaAs quantum wells|Jing Xu,Meng K. Ma,Maksim Sultanov,Zhi-Li Xiao,Yong-Lei Wang,Dafei Jin,Yang-Yang Lyu,Wei Zhang,Loren N. Pfeiffer,Ken W. West,Kirk W. Baldwin,Mansour Shayegan,Wai-Kwong Kwok###
(1184055, 1184055)
 The observed NLMRs showvarious types of magnetic field behaviour resembling those reported intopological materials.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 9, 'Tesla', 1],[7.0, 5, 'K', 1]

In
###Anisotropy of Dirac cones and van Hove singularity in an organic Dirac fermion system|Ayaka Mori,Mitsuyuki Sato,Takeshi Yajima,Takako Konoike,Kazuhito Uchida,Toshihito Osada###
(1184265, 1184265)
 In the method, we measure theinterlayer magnetoresistance as a function of in-plane magnetic fieldorientation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, -30, 'deg', 2]

B
###Anisotropy of Dirac cones and van Hove singularity in an organic Dirac fermion system|Ayaka Mori,Mitsuyuki Sato,Takeshi Yajima,Takako Konoike,Kazuhito Uchida,Toshihito Osada###
(1184324, 1184324)
 We applied it to an organic Dirac fermion system a-(BEDT-TTF)2I3to experimentally determine the orientation of the anisotropic Dirac cones.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, -30, 'deg', 1]

F
###Anisotropy of Dirac cones and van Hove singularity in an organic Dirac fermion system|Ayaka Mori,Mitsuyuki Sato,Takeshi Yajima,Takako Konoike,Kazuhito Uchida,Toshihito Osada###
(1184331, 1184331)
 We applied it to an organic Dirac fermion system a-(BEDT-TTF)2I3to experimentally determine the orientation of the anisotropic Dirac cones.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, -30, 'deg', 1]

I3
###Anisotropy of Dirac cones and van Hove singularity in an organic Dirac fermion system|Ayaka Mori,Mitsuyuki Sato,Takeshi Yajima,Takako Konoike,Kazuhito Uchida,Toshihito Osada###
(1184334, 1184335)
 We applied it to an organic Dirac fermion system a-(BEDT-TTF)2I3to experimentally determine the orientation of the anisotropic Dirac cones.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, -30, 'deg', 1]

K
###Anisotropy of Dirac cones and van Hove singularity in an organic Dirac fermion system|Ayaka Mori,Mitsuyuki Sato,Takeshi Yajima,Takako Konoike,Kazuhito Uchida,Toshihito Osada###
(1184475, 1184475)
 Additionally, we observed a signature ofvan Hove singularity (which is a saddle point of the band dispersion) at 30-40K above or below the Dirac point.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, -30, 'deg', 1]

InBi
###Extremely large magnetoresistance induced by hidden three-dimensional Dirac bands in nonmagnetic semimetal InBi|K. Okawa,M. Kanou,H. Namiki,T. Sasagawa###
(1184866, 1184867)
Extremely large magnetoresistance induced by hidden three-dimensional Dirac bands in nonmagnetic semimetal InBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[257.0, 3, 'D', 5]

InBi
###Extremely large magnetoresistance induced by hidden three-dimensional Dirac bands in nonmagnetic semimetal InBi|K. Okawa,M. Kanou,H. Namiki,T. Sasagawa###
(1184897, 1184898)
 Extremely large positive magnetoresistance (XMR) was found in a nonmagneticsemimetal InBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[226.0, 3, 'D', 4]

(SOI)
###Extremely large magnetoresistance induced by hidden three-dimensional Dirac bands in nonmagnetic semimetal InBi|K. Okawa,M. Kanou,H. Namiki,T. Sasagawa###
(1185034, 1185038)
 First-principle calculationsincluding the spin-orbit interactions (SOI) unveiled that InBi had acompensated carrier balance and SOI-induced hidden three-dimensional (3D)Dirac bands at the M<missing VAR> and R<missing VAR> points.
Featurization successful!
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 3, 'D', 1]

InBi
###Extremely large magnetoresistance induced by hidden three-dimensional Dirac bands in nonmagnetic semimetal InBi|K. Okawa,M. Kanou,H. Namiki,T. Sasagawa###
(1185044, 1185045)
 First-principle calculationsincluding the spin-orbit interactions (SOI) unveiled that InBi had acompensated carrier balance and SOI-induced hidden three-dimensional (3D)Dirac bands at the M<missing VAR> and R<missing VAR> points.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 3, 'D', 1]

SOI
###Extremely large magnetoresistance induced by hidden three-dimensional Dirac bands in nonmagnetic semimetal InBi|K. Okawa,M. Kanou,H. Namiki,T. Sasagawa###
(1185060, 1185062)
 First-principle calculationsincluding the spin-orbit interactions (SOI) unveiled that InBi had acompensated carrier balance and SOI-induced hidden three-dimensional (3D)Dirac bands at the M<missing VAR> and R<missing VAR> points.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 3, 'D', 1]

InBi
###Extremely large magnetoresistance induced by hidden three-dimensional Dirac bands in nonmagnetic semimetal InBi|K. Okawa,M. Kanou,H. Namiki,T. Sasagawa###
(1185151, 1185152)
 Because the small m<missing VAR> and the large carriermobilities will be realized, these hidden 3D Dirac bands should play animportant role for the XMR in InBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 3, 'D', 0]

V
###Quasiperiodic functions on the plane and electron transport phenomena|Roberto De Leo,Andrei Ya. Maltsev###
(1185331, 1185331)
 While quasiperiodic functions in one variable appeared in applications sinceEighteen hundreds, for example in connection with the trajectories ofmechanical systems with 2n degress of freedom having n<missing VAR> commuting firstintegrals, the first applications of multivariable quasiperiodic functions werefound only in Seventies, in connection with solitonic solutions of the KdVequation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 2, 'n', 0]

In
###Quasiperiodic functions on the plane and electron transport phenomena|Roberto De Leo,Andrei Ya. Maltsev###
(1185385, 1185385)
 In this article we reformulate, specifically in terms of thetopology of level sets of quasiperiodic functions on the plane, somefundamental theoretical results found in Eighties and Nineties, then we reviewthe physical models of electron transport and their connections withquasiperiodic functions and finally we present some old and new numericalresults on the level sets of some specific family of quasiperiodic functions,some of which related to the magnetoresistance in normal metals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 2, 'n', 2]

SrTiO3/Nd1-xTiO3/SrTiO3
###Hopping Transport in SrTiO3/Nd1-xTiO3/SrTiO3 Heterostructures|Laxman Raju Thoutam,Jin Yue,Peng Xu,Bharat Jalan###
(1185908, 1185924)
Hopping Transport in SrTiO3/Nd1-xTiO3/SrTiO3 Heterostructures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

In
###Anomalous scalings of the cuprate strange metals from nonlinear electrodynamics|Sera Cremonini,Anthony Hoover,Li Li,Steven Waskie###
(1186337, 1186337)
 In the dilutecharge limit in which the gauge field sector does not backreact on thegeometry, a particularly simple nonlinear theory reproduces the anomaloustemperature dependence of the resistivity and Hall angle of the cuprate strangemetals, R<missing VAR> sim T<missing VAR> and cotThetaH sim T<missing VAR>2 while also allowing for a linearentropy S sim T<missing VAR>, and predicts that the magnetoresistance for small values ofthe magnetic field h<missing VAR> should scale as sim h<missing VAR>2 T<missing VAR>-4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Anomalous scalings of the cuprate strange metals from nonlinear electrodynamics|Sera Cremonini,Anthony Hoover,Li Li,Steven Waskie###
(1186429, 1186429)
 In the dilutecharge limit in which the gauge field sector does not backreact on thegeometry, a particularly simple nonlinear theory reproduces the anomaloustemperature dependence of the resistivity and Hall angle of the cuprate strangemetals, R<missing VAR> sim T<missing VAR> and cotThetaH sim T<missing VAR>2 while also allowing for a linearentropy S sim T<missing VAR>, and predicts that the magnetoresistance for small values ofthe magnetic field h<missing VAR> should scale as sim h<missing VAR>2 T<missing VAR>-4.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Anomalous scalings of the cuprate strange metals from nonlinear electrodynamics|Sera Cremonini,Anthony Hoover,Li Li,Steven Waskie###
(1186451, 1186451)
 In the dilutecharge limit in which the gauge field sector does not backreact on thegeometry, a particularly simple nonlinear theory reproduces the anomaloustemperature dependence of the resistivity and Hall angle of the cuprate strangemetals, R<missing VAR> sim T<missing VAR> and cotThetaH sim T<missing VAR>2 while also allowing for a linearentropy S sim T<missing VAR>, and predicts that the magnetoresistance for small values ofthe magnetic field h<missing VAR> should scale as sim h<missing VAR>2 T<missing VAR>-4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cd3As2
###Thermal tuning of the carrier density in Dirac semimetal Cd3As2 nanoplates|Min Wu,Guolin Zheng,Zheng Chen,Yequn Liu,Wenshuai Gao,Hongwei Zhang,Yuyan Han,Lan Wang,Jianhui Zhou,Wei Ning,Mingliang Tian###
(1186580, 1186583)
Thermal tuning of the carrier density in Dirac semimetal Cd3As2 nanoplates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cd3As2
###Thermal tuning of the carrier density in Dirac semimetal Cd3As2 nanoplates|Min Wu,Guolin Zheng,Zheng Chen,Yequn Liu,Wenshuai Gao,Hongwei Zhang,Yuyan Han,Lan Wang,Jianhui Zhou,Wei Ning,Mingliang Tian###
(1186662, 1186665)
 Here wedemonstrate that the carrier density as well as the mobility of Dirac semimetalCd3As2 nanoplates can be effectively tuned by the in-situ thermal treatment at350 K for one hour, both showing a non-monotonic evolution with the thermalcycling treatments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Thermal tuning of the carrier density in Dirac semimetal Cd3As2 nanoplates|Min Wu,Guolin Zheng,Zheng Chen,Yequn Liu,Wenshuai Gao,Hongwei Zhang,Yuyan Han,Lan Wang,Jianhui Zhou,Wei Ning,Mingliang Tian###
(1186694, 1186694)
 Here wedemonstrate that the carrier density as well as the mobility of Dirac semimetalCd3As2 nanoplates can be effectively tuned by the in-situ thermal treatment at350 K for one hour, both showing a non-monotonic evolution with the thermalcycling treatments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cd3As2
###Thermal tuning of the carrier density in Dirac semimetal Cd3As2 nanoplates|Min Wu,Guolin Zheng,Zheng Chen,Yequn Liu,Wenshuai Gao,Hongwei Zhang,Yuyan Han,Lan Wang,Jianhui Zhou,Wei Ning,Mingliang Tian###
(1186901, 1186904)
 Our work provides a thermal control knob for manipulations ofthe quantum states through the carrier density in Dirac semimetal Cd3As2 athigh temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OS
###Controlling magnetoresistance by oxygen impurities in Mq3-based molecular spin valves|Alberto Riminucci,Zhi-Gang Yu,Mirko Prezioso,Raimondo Cecchini,Ilaria Bergenti,Patrizio Graziosi,Valentin Alek Dediu###
(1186968, 1186969)
 The understanding of magnetoresistance (MR) in organic spin valves (OSVs)based on molecular semiconductors is still incomplete after its demonstrationmore than a decade ago.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OS
###Controlling magnetoresistance by oxygen impurities in Mq3-based molecular spin valves|Alberto Riminucci,Zhi-Gang Yu,Mirko Prezioso,Raimondo Cecchini,Ilaria Bergenti,Patrizio Graziosi,Valentin Alek Dediu###
(1187094, 1187095)
 We probed the role of charge carrier concentration bystudying the interplay between MR and multilevel resistive switching in OSVs.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OS
###Controlling magnetoresistance by oxygen impurities in Mq3-based molecular spin valves|Alberto Riminucci,Zhi-Gang Yu,Mirko Prezioso,Raimondo Cecchini,Ilaria Bergenti,Patrizio Graziosi,Valentin Alek Dediu###
(1187207, 1187208)
 Finally,we highlight the critical importance of carrier concentration in determiningspin transport and MR in OSVs and the role of interface-mediated oxygenmigration in controlling the OSVs response.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OS
###Controlling magnetoresistance by oxygen impurities in Mq3-based molecular spin valves|Alberto Riminucci,Zhi-Gang Yu,Mirko Prezioso,Raimondo Cecchini,Ilaria Bergenti,Patrizio Graziosi,Valentin Alek Dediu###
(1187234, 1187235)
 Finally,we highlight the critical importance of carrier concentration in determiningspin transport and MR in OSVs and the role of interface-mediated oxygenmigration in controlling the OSVs response.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Isolated zero field sub-10 nm skyrmions in ultrathin Co films|Sebastian Meyer,Marco Perini,Stephan von Malottki,André Kubetzka,Roland Wiesendanger,Kirsten von Bergmann,Stefan Heinze###
(1187267, 1187267)
Isolated zero field sub-10 nm skyrmions in ultrathin Co films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 10, 'nm', 2],[177.0, 5, 'nm', 4],[182.0, 1, 'nm', 4]

Rh/Co
###Isolated zero field sub-10 nm skyrmions in ultrathin Co films|Sebastian Meyer,Marco Perini,Stephan von Malottki,André Kubetzka,Roland Wiesendanger,Kirsten von Bergmann,Stefan Heinze###
(1187459, 1187461)
 Here we report zero field isolated skyrmions withdiameters smaller than 5 nm coexisting with 1 nm thin domain walls in Rh/Coatomic bilayers on the Ir(111) surface.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[111.0, 10, 'nm', 2],[15.0, 5, 'nm', 0],[10.0, 1, 'nm', 0]

Co
###Isolated zero field sub-10 nm skyrmions in ultrathin Co films|Sebastian Meyer,Marco Perini,Stephan von Malottki,André Kubetzka,Roland Wiesendanger,Kirsten von Bergmann,Stefan Heinze###
(1187564, 1187564)
 Wedemonstrate that sub-10 nm skyrmions are stabilised in these ferromagnetic Cofilms at zero field due to strong frustration of exchange interaction, togetherwith Dzyaloshinskii-Moriya interaction and a large magnetocrystallineanisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[216.0, 10, 'nm', 4],[120.0, 5, 'nm', 2],[115.0, 1, 'nm', 2]

S
###Orientation of hole quantum Hall nematic phases in an out-of-plane electric field|A. F. Croxall,F. Sfigakis,J. Waldie,I. Farrer,D. A. Ritchie###
(1187698, 1187698)
 We present observations of an anisotropic resistance state at Landau levelfilling factor nu5/2 in a two-dimensional hole system (2D<missing VAR>HS), which occursfor certain values of hole density p<missing VAR> and average out-of-plane electric fieldE<missing VAR>perp.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 2, 'DHS', 1]

GaAs/AlGaAs
###Orientation of hole quantum Hall nematic phases in an out-of-plane electric field|A. F. Croxall,F. Sfigakis,J. Waldie,I. Farrer,D. A. Ritchie###
(1187762, 1187767)
 The 2DHS is induced by electric field effect in an undopedGaAs/AlGaAs quantum well, where front and back gates allow independent tuningof p<missing VAR> and E<missing VAR>perp, and hence the symmetry of the confining potential.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[21.0, 2, 'DHS', 0]

V
###Orientation of hole quantum Hall nematic phases in an out-of-plane electric field|A. F. Croxall,F. Sfigakis,J. Waldie,I. Farrer,D. A. Ritchie###
(1187844, 1187844)
 Forp<missing VAR>approx2times1011cm-2 and E<missing VAR>perp approx -2 times105V/m<missing VAR>,the magnetoresistance along langle01bar1rangle greatly exceeds that alonglangle011rangle, suggesting the formation of a quantum Hall nematic orstripe phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 2, 'DHS', 1]

Cr2Te3
###Topological Hall effect in bulk ferromagnet Cr$_2$Te$_3$ embedded with black-phosphorus-like bismuth nanosheets|Liang Zhou,Junshu Chen,Xiaobin Chen,Bin Xi,Yang Qiu,Junwei Zhang,Linjing Wang,Runnan Zhang,Bicong Ye,Pingbo Chen,Xixiang Zhang,Guoping Guo,Dapeng Yu,Jia-Wei Mei,Fei Ye,Gan Wang,Hongtao He###
(1187999, 1188002)
Topological Hall effect in bulk ferromagnet Cr2Te3 embedded with black-phosphorus-like bismuth nanosheets.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr2Te3
###Topological Hall effect in bulk ferromagnet Cr$_2$Te$_3$ embedded with black-phosphorus-like bismuth nanosheets|Liang Zhou,Junshu Chen,Xiaobin Chen,Bin Xi,Yang Qiu,Junwei Zhang,Linjing Wang,Runnan Zhang,Bicong Ye,Pingbo Chen,Xixiang Zhang,Guoping Guo,Dapeng Yu,Jia-Wei Mei,Fei Ye,Gan Wang,Hongtao He###
(1188059, 1188062)
 We implement the molecular beam epitaxy method to embed theblack-phosphorus-like bismuth nanosheets into the bulk ferromagnetCr2Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Topological Hall effect in bulk ferromagnet Cr$_2$Te$_3$ embedded with black-phosphorus-like bismuth nanosheets|Liang Zhou,Junshu Chen,Xiaobin Chen,Bin Xi,Yang Qiu,Junwei Zhang,Linjing Wang,Runnan Zhang,Bicong Ye,Pingbo Chen,Xixiang Zhang,Guoping Guo,Dapeng Yu,Jia-Wei Mei,Fei Ye,Gan Wang,Hongtao He###
(1188065, 1188065)
 As a typical surfactant, bismuth lowers the surface tensions andmediates the layer-by-layer growth of Cr2Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr2Te3
###Topological Hall effect in bulk ferromagnet Cr$_2$Te$_3$ embedded with black-phosphorus-like bismuth nanosheets|Liang Zhou,Junshu Chen,Xiaobin Chen,Bin Xi,Yang Qiu,Junwei Zhang,Linjing Wang,Runnan Zhang,Bicong Ye,Pingbo Chen,Xixiang Zhang,Guoping Guo,Dapeng Yu,Jia-Wei Mei,Fei Ye,Gan Wang,Hongtao He###
(1188101, 1188104)
 As a typical surfactant, bismuth lowers the surface tensions andmediates the layer-by-layer growth of Cr2Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Topological Hall effect in bulk ferromagnet Cr$_2$Te$_3$ embedded with black-phosphorus-like bismuth nanosheets|Liang Zhou,Junshu Chen,Xiaobin Chen,Bin Xi,Yang Qiu,Junwei Zhang,Linjing Wang,Runnan Zhang,Bicong Ye,Pingbo Chen,Xixiang Zhang,Guoping Guo,Dapeng Yu,Jia-Wei Mei,Fei Ye,Gan Wang,Hongtao He###
(1188149, 1188149)
 In Cr2Te3 embedded with Bi-nanosheets, weobserve simultaneously a large topological Hall effect together with themagnetic susceptibility plateau and magnetoresistivity anomaly.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr2Te3
###Topological Hall effect in bulk ferromagnet Cr$_2$Te$_3$ embedded with black-phosphorus-like bismuth nanosheets|Liang Zhou,Junshu Chen,Xiaobin Chen,Bin Xi,Yang Qiu,Junwei Zhang,Linjing Wang,Runnan Zhang,Bicong Ye,Pingbo Chen,Xixiang Zhang,Guoping Guo,Dapeng Yu,Jia-Wei Mei,Fei Ye,Gan Wang,Hongtao He###
(1188151, 1188154)
 In Cr2Te3 embedded with Bi-nanosheets, weobserve simultaneously a large topological Hall effect together with themagnetic susceptibility plateau and magnetoresistivity anomaly.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi
###Topological Hall effect in bulk ferromagnet Cr$_2$Te$_3$ embedded with black-phosphorus-like bismuth nanosheets|Liang Zhou,Junshu Chen,Xiaobin Chen,Bin Xi,Yang Qiu,Junwei Zhang,Linjing Wang,Runnan Zhang,Bicong Ye,Pingbo Chen,Xixiang Zhang,Guoping Guo,Dapeng Yu,Jia-Wei Mei,Fei Ye,Gan Wang,Hongtao He###
(1188160, 1188160)
 In Cr2Te3 embedded with Bi-nanosheets, weobserve simultaneously a large topological Hall effect together with themagnetic susceptibility plateau and magnetoresistivity anomaly.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Topological Hall effect in bulk ferromagnet Cr$_2$Te$_3$ embedded with black-phosphorus-like bismuth nanosheets|Liang Zhou,Junshu Chen,Xiaobin Chen,Bin Xi,Yang Qiu,Junwei Zhang,Linjing Wang,Runnan Zhang,Bicong Ye,Pingbo Chen,Xixiang Zhang,Guoping Guo,Dapeng Yu,Jia-Wei Mei,Fei Ye,Gan Wang,Hongtao He###
(1188202, 1188202)
 As a controlexperiment, none of these signals is observed in the pristine Cr2Te3samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr2Te3
###Topological Hall effect in bulk ferromagnet Cr$_2$Te$_3$ embedded with black-phosphorus-like bismuth nanosheets|Liang Zhou,Junshu Chen,Xiaobin Chen,Bin Xi,Yang Qiu,Junwei Zhang,Linjing Wang,Runnan Zhang,Bicong Ye,Pingbo Chen,Xixiang Zhang,Guoping Guo,Dapeng Yu,Jia-Wei Mei,Fei Ye,Gan Wang,Hongtao He###
(1188230, 1188233)
 As a controlexperiment, none of these signals is observed in the pristine Cr2Te3samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi
###Topological Hall effect in bulk ferromagnet Cr$_2$Te$_3$ embedded with black-phosphorus-like bismuth nanosheets|Liang Zhou,Junshu Chen,Xiaobin Chen,Bin Xi,Yang Qiu,Junwei Zhang,Linjing Wang,Runnan Zhang,Bicong Ye,Pingbo Chen,Xixiang Zhang,Guoping Guo,Dapeng Yu,Jia-Wei Mei,Fei Ye,Gan Wang,Hongtao He###
(1188244, 1188244)
 Therefore, the Bi-nanosheets serve as seeds of topological Hall effectinduced by non-coplanar magnetic textures planted into Cr2Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr2Te3
###Topological Hall effect in bulk ferromagnet Cr$_2$Te$_3$ embedded with black-phosphorus-like bismuth nanosheets|Liang Zhou,Junshu Chen,Xiaobin Chen,Bin Xi,Yang Qiu,Junwei Zhang,Linjing Wang,Runnan Zhang,Bicong Ye,Pingbo Chen,Xixiang Zhang,Guoping Guo,Dapeng Yu,Jia-Wei Mei,Fei Ye,Gan Wang,Hongtao He###
(1188279, 1188282)
 Therefore, the Bi-nanosheets serve as seeds of topological Hall effectinduced by non-coplanar magnetic textures planted into Cr2Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TiSe2
###Effect of synthesis conditions on the electrical resistivity of TiSe$_2$|Jaime M. Moya,C. -L. Huang,Jesse Choe,Gelu Costin,Matthew S. Foster,E. Morosan###
(1188376, 1188378)
Effect of synthesis conditions on the electrical resistivity of TiSe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TiSe2
###Effect of synthesis conditions on the electrical resistivity of TiSe$_2$|Jaime M. Moya,C. -L. Huang,Jesse Choe,Gelu Costin,Matthew S. Foster,E. Morosan###
(1188406, 1188408)
 Dilute impurities and growth conditions can drastically affect the transportproperties of TiSe2, especially below the charge density wave transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Effect of synthesis conditions on the electrical resistivity of TiSe$_2$|Jaime M. Moya,C. -L. Huang,Jesse Choe,Gelu Costin,Matthew S. Foster,E. Morosan###
(1188426, 1188426)
 Inthis paper, we discuss the effects of cooling rate, annealing time andannealing temperature on the transport properties of TiSe2 slow cooling ofpolycrystalline TiSe2 post-synthesis drastically increases the lowtemperature resistivity, which is in contrast to the metallic behavior ofsingle-crystalline TiSe2 due to charge doping from the residual iodinetransport agent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TiSe2
###Effect of synthesis conditions on the electrical resistivity of TiSe$_2$|Jaime M. Moya,C. -L. Huang,Jesse Choe,Gelu Costin,Matthew S. Foster,E. Morosan###
(1188470, 1188472)
 Inthis paper, we discuss the effects of cooling rate, annealing time andannealing temperature on the transport properties of TiSe2 slow cooling ofpolycrystalline TiSe2 post-synthesis drastically increases the lowtemperature resistivity, which is in contrast to the metallic behavior ofsingle-crystalline TiSe2 due to charge doping from the residual iodinetransport agent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TiSe2
###Effect of synthesis conditions on the electrical resistivity of TiSe$_2$|Jaime M. Moya,C. -L. Huang,Jesse Choe,Gelu Costin,Matthew S. Foster,E. Morosan###
(1188483, 1188485)
 Inthis paper, we discuss the effects of cooling rate, annealing time andannealing temperature on the transport properties of TiSe2 slow cooling ofpolycrystalline TiSe2 post-synthesis drastically increases the lowtemperature resistivity, which is in contrast to the metallic behavior ofsingle-crystalline TiSe2 due to charge doping from the residual iodinetransport agent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TiSe2
###Effect of synthesis conditions on the electrical resistivity of TiSe$_2$|Jaime M. Moya,C. -L. Huang,Jesse Choe,Gelu Costin,Matthew S. Foster,E. Morosan###
(1188528, 1188530)
 Inthis paper, we discuss the effects of cooling rate, annealing time andannealing temperature on the transport properties of TiSe2 slow cooling ofpolycrystalline TiSe2 post-synthesis drastically increases the lowtemperature resistivity, which is in contrast to the metallic behavior ofsingle-crystalline TiSe2 due to charge doping from the residual iodinetransport agent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TiSe2
###Effect of synthesis conditions on the electrical resistivity of TiSe$_2$|Jaime M. Moya,C. -L. Huang,Jesse Choe,Gelu Costin,Matthew S. Foster,E. Morosan###
(1188608, 1188610)
 A logarithmic increase of resistivity upon cooling andnegative magnetoresistance with a sharp cusp around zero field are observed forthe first time for the polycrystalline TiSe2 samples, pointing toweak-localization effects due to low dimensionality.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaAlO3/SrTiO3
###Tuning Rashba spin-orbit coupling at LaAlO3/SrTiO3 interfaces by band filling|Chunhai Yin,Patrick Seiler,Lucas M. K. Tang,Inge Leermakers,Nikita Lebedev,Uli Zeitler,Jan Aarts###
(1188729, 1188737)
Tuning Rashba spin-orbit coupling at LaAlO3/SrTiO3 interfaces by band filling.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

LaAlO3/SrTiO3
###Tuning Rashba spin-orbit coupling at LaAlO3/SrTiO3 interfaces by band filling|Chunhai Yin,Patrick Seiler,Lucas M. K. Tang,Inge Leermakers,Nikita Lebedev,Uli Zeitler,Jan Aarts###
(1188768, 1188776)
 The electric-field tunable Rashba spin-orbit coupling at the LaAlO3/SrTiO3interface shows potential applications in spintronic devices.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

In
###Tuning Rashba spin-orbit coupling at LaAlO3/SrTiO3 interfaces by band filling|Chunhai Yin,Patrick Seiler,Lucas M. K. Tang,Inge Leermakers,Nikita Lebedev,Uli Zeitler,Jan Aarts###
(1188880, 1188880)
 In this work, we study the tuneability of the Rashba effect inLaAlO3/SrTiO3 by means of back-gating.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaAlO3/SrTiO3
###Tuning Rashba spin-orbit coupling at LaAlO3/SrTiO3 interfaces by band filling|Chunhai Yin,Patrick Seiler,Lucas M. K. Tang,Inge Leermakers,Nikita Lebedev,Uli Zeitler,Jan Aarts###
(1188906, 1188914)
 In this work, we study the tuneability of the Rashba effect inLaAlO3/SrTiO3 by means of back-gating.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

S
###Electronic Transport and quantum oscillation of Topological Semimetals|Jin Hu,Su-Yang Xu,Ni Ni,Zhiqiang Mao###
(1189195, 1189195)
Several topological semimetal phases, including Dirac semimetals (D<missing VAR>SMs), Weylsemimetals (WSMs), nodal-line semimetals (NL<missing VAR>SMs), and triple-point semimetals,have been theoretically predicted and experimentally demonstrated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WS
###Electronic Transport and quantum oscillation of Topological Semimetals|Jin Hu,Su-Yang Xu,Ni Ni,Zhiqiang Mao###
(1189206, 1189207)
Several topological semimetal phases, including Dirac semimetals (D<missing VAR>SMs), Weylsemimetals (WSMs), nodal-line semimetals (NL<missing VAR>SMs), and triple-point semimetals,have been theoretically predicted and experimentally demonstrated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Electronic Transport and quantum oscillation of Topological Semimetals|Jin Hu,Su-Yang Xu,Ni Ni,Zhiqiang Mao###
(1189219, 1189219)
Several topological semimetal phases, including Dirac semimetals (D<missing VAR>SMs), Weylsemimetals (WSMs), nodal-line semimetals (NL<missing VAR>SMs), and triple-point semimetals,have been theoretically predicted and experimentally demonstrated.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Electronic Transport and quantum oscillation of Topological Semimetals|Jin Hu,Su-Yang Xu,Ni Ni,Zhiqiang Mao###
(1189221, 1189221)
Several topological semimetal phases, including Dirac semimetals (D<missing VAR>SMs), Weylsemimetals (WSMs), nodal-line semimetals (NL<missing VAR>SMs), and triple-point semimetals,have been theoretically predicted and experimentally demonstrated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Electronic Transport and quantum oscillation of Topological Semimetals|Jin Hu,Su-Yang Xu,Ni Ni,Zhiqiang Mao###
(1189376, 1189376)
In this review, we first briefly introduce band structural characteristics ofeach topological semimetal phase, then review the current studies on quantumoscillations and exotic transport properties of various topological semimetals,and finally provide a perspective of this area.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

VSe2/MoS2
###Large tunneling magnetoresistance in VSe2/MoS2 magnetic tunnel junction|Jiaqi Zhou,Junfeng Qiao,Chun-Gang Duan,Arnaud Bournel,Kang L. Wang,Weisheng Zhao###
(1189477, 1189483)
Large tunneling magnetoresistance in VSe2/MoS2 magnetic tunnel junction.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[208.0, 300, 'Kelvin', 4],[373.0, 2, 'D', 7]

W
###Large tunneling magnetoresistance in VSe2/MoS2 magnetic tunnel junction|Jiaqi Zhou,Junfeng Qiao,Chun-Gang Duan,Arnaud Bournel,Kang L. Wang,Weisheng Zhao###
(1189509, 1189509)
 Two-dimensional (2D) van der Waals (vdW) materials provide the possibility ofrealizing heterostructures with coveted properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[182.0, 300, 'Kelvin', 3],[347.0, 2, 'D', 6]

W
###Large tunneling magnetoresistance in VSe2/MoS2 magnetic tunnel junction|Jiaqi Zhou,Junfeng Qiao,Chun-Gang Duan,Arnaud Bournel,Kang L. Wang,Weisheng Zhao###
(1189553, 1189553)
 Here, we report atheoretical investigation of the vdW magnetic tunnel junction (MTJ) based onVSe2/MoS2 heterojunction, where the VSe2 monolayer acts as the ferromagnet withthe room-temperature ferromagnetism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 300, 'Kelvin', 2],[303.0, 2, 'D', 5]

VSe2/MoS2
###Large tunneling magnetoresistance in VSe2/MoS2 magnetic tunnel junction|Jiaqi Zhou,Junfeng Qiao,Chun-Gang Duan,Arnaud Bournel,Kang L. Wang,Weisheng Zhao###
(1189572, 1189578)
 Here, we report atheoretical investigation of the vdW magnetic tunnel junction (MTJ) based onVSe2/MoS2 heterojunction, where the VSe2 monolayer acts as the ferromagnet withthe room-temperature ferromagnetism.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[113.0, 300, 'Kelvin', 2],[278.0, 2, 'D', 5]

VSe2
###Large tunneling magnetoresistance in VSe2/MoS2 magnetic tunnel junction|Jiaqi Zhou,Junfeng Qiao,Chun-Gang Duan,Arnaud Bournel,Kang L. Wang,Weisheng Zhao###
(1189587, 1189589)
 Here, we report atheoretical investigation of the vdW magnetic tunnel junction (MTJ) based onVSe2/MoS2 heterojunction, where the VSe2 monolayer acts as the ferromagnet withthe room-temperature ferromagnetism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 300, 'Kelvin', 2],[267.0, 2, 'D', 5]

SO
###Large tunneling magnetoresistance in VSe2/MoS2 magnetic tunnel junction|Jiaqi Zhou,Junfeng Qiao,Chun-Gang Duan,Arnaud Bournel,Kang L. Wang,Weisheng Zhao###
(1189631, 1189632)
 We propose the concept of spin-orbittorque (SOT) vdW MTJ with reliable reading and efficient writing operations.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 300, 'Kelvin', 1],[224.0, 2, 'D', 4]

W
###Large tunneling magnetoresistance in VSe2/MoS2 magnetic tunnel junction|Jiaqi Zhou,Junfeng Qiao,Chun-Gang Duan,Arnaud Bournel,Kang L. Wang,Weisheng Zhao###
(1189637, 1189637)
 We propose the concept of spin-orbittorque (SOT) vdW MTJ with reliable reading and efficient writing operations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 300, 'Kelvin', 1],[219.0, 2, 'D', 4]

MoS2
###Large tunneling magnetoresistance in VSe2/MoS2 magnetic tunnel junction|Jiaqi Zhou,Junfeng Qiao,Chun-Gang Duan,Arnaud Bournel,Kang L. Wang,Weisheng Zhao###
(1189728, 1189730)
 Thanks to the strong spin Hall conductivity of MoS2, SOT<missing VAR> is promisingfor the magnetization switching of VSe2 free layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 300, 'Kelvin', 1],[126.0, 2, 'D', 2]

SO
###Large tunneling magnetoresistance in VSe2/MoS2 magnetic tunnel junction|Jiaqi Zhou,Junfeng Qiao,Chun-Gang Duan,Arnaud Bournel,Kang L. Wang,Weisheng Zhao###
(1189733, 1189734)
 Thanks to the strong spin Hall conductivity of MoS2, SOT<missing VAR> is promisingfor the magnetization switching of VSe2 free layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 300, 'Kelvin', 1],[122.0, 2, 'D', 2]

VSe2
###Large tunneling magnetoresistance in VSe2/MoS2 magnetic tunnel junction|Jiaqi Zhou,Junfeng Qiao,Chun-Gang Duan,Arnaud Bournel,Kang L. Wang,Weisheng Zhao###
(1189752, 1189754)
 Thanks to the strong spin Hall conductivity of MoS2, SOT<missing VAR> is promisingfor the magnetization switching of VSe2 free layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 300, 'Kelvin', 1],[102.0, 2, 'D', 2]

SO
###Large tunneling magnetoresistance in VSe2/MoS2 magnetic tunnel junction|Jiaqi Zhou,Junfeng Qiao,Chun-Gang Duan,Arnaud Bournel,Kang L. Wang,Weisheng Zhao###
(1189811, 1189812)
 The SOT<missing VAR> vdW MTJ based on VSe2/MoS2provides desirable performance and experimental feasibility, offering newopportunities for 2D spintronics.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 300, 'Kelvin', 3],[44.0, 2, 'D', 0]

W
###Large tunneling magnetoresistance in VSe2/MoS2 magnetic tunnel junction|Jiaqi Zhou,Junfeng Qiao,Chun-Gang Duan,Arnaud Bournel,Kang L. Wang,Weisheng Zhao###
(1189816, 1189816)
 The SOT<missing VAR> vdW MTJ based on VSe2/MoS2provides desirable performance and experimental feasibility, offering newopportunities for 2D spintronics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 300, 'Kelvin', 3],[40.0, 2, 'D', 0]

VSe2/MoS2
###Large tunneling magnetoresistance in VSe2/MoS2 magnetic tunnel junction|Jiaqi Zhou,Junfeng Qiao,Chun-Gang Duan,Arnaud Bournel,Kang L. Wang,Weisheng Zhao###
(1189826, 1189832)
 The SOT<missing VAR> vdW MTJ based on VSe2/MoS2provides desirable performance and experimental feasibility, offering newopportunities for 2D spintronics.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[135.0, 300, 'Kelvin', 3],[24.0, 2, 'D', 0]

Al6Re
###Magnetotransport in Al6Re|Erjian Cheng,Darren C. Peets,Chuanying Xi,Yeyu Huang,Li Pi,Shiyan Li###
(1189873, 1189875)
Magnetotransport in Al6Re.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 0.74, ',', 2],[129.0, 50, ',', 2],[241.0, 33, ',', 5]

I
###Magnetotransport in Al6Re|Erjian Cheng,Darren C. Peets,Chuanying Xi,Yeyu Huang,Li Pi,Shiyan Li###
(1189886, 1189886)
 Since very few Type-I superconductors are known and most are elementalsuperconductors, there are very few experimental platforms where theinteraction between Type-I superconductivity and topologically nontrivial bandstructure can be probed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 0.74, ',', 1],[118.0, 50, ',', 1],[230.0, 33, ',', 4]

I
###Magnetotransport in Al6Re|Erjian Cheng,Darren C. Peets,Chuanying Xi,Yeyu Huang,Li Pi,Shiyan Li###
(1189929, 1189929)
 Since very few Type-I superconductors are known and most are elementalsuperconductors, there are very few experimental platforms where theinteraction between Type-I superconductivity and topologically nontrivial bandstructure can be probed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 0.74, ',', 1],[75.0, 50, ',', 1],[187.0, 33, ',', 4]

Al6Re
###Magnetotransport in Al6Re|Erjian Cheng,Darren C. Peets,Chuanying Xi,Yeyu Huang,Li Pi,Shiyan Li###
(1189957, 1189959)
 The rhenium aluminide Al6Re has recently beenidentified as a Type-I superconductor with a transition of 0.74,K and acritical field of sim50,Oe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 0.74, ',', 0],[45.0, 50, ',', 0],[157.0, 33, ',', 3]

I
###Magnetotransport in Al6Re|Erjian Cheng,Darren C. Peets,Chuanying Xi,Yeyu Huang,Li Pi,Shiyan Li###
(1189976, 1189976)
 The rhenium aluminide Al6Re has recently beenidentified as a Type-I superconductor with a transition of 0.74,K and acritical field of sim50,Oe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 0.74, ',', 0],[28.0, 50, ',', 0],[140.0, 33, ',', 3]

K
###Magnetotransport in Al6Re|Erjian Cheng,Darren C. Peets,Chuanying Xi,Yeyu Huang,Li Pi,Shiyan Li###
(1189990, 1189990)
 The rhenium aluminide Al6Re has recently beenidentified as a Type-I superconductor with a transition of 0.74,K and acritical field of sim50,Oe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 0.74, ',', 0],[14.0, 50, ',', 0],[126.0, 33, ',', 3]

H
###Magnetotransport in Al6Re|Erjian Cheng,Darren C. Peets,Chuanying Xi,Yeyu Huang,Li Pi,Shiyan Li###
(1190049, 1190049)
 Here, we report its magnetotransport behaviorincluding de Haas-van Alphen (d<missing VAR>HvA) and Shubnikov-de Haas (SdH) oscillations.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 0.74, ',', 1],[45.0, 50, ',', 1],[67.0, 33, ',', 2]

YI
###Current-induced switching of YIG/Pt bilayers with in-plane magnetization due to Oersted fields|Johannes Mendil,Morgan Trassin,Quingquing Bu,Manfred Fiebig,Pietro Gambardella###
(1190232, 1190233)
Current-induced switching of YIG<missing VAR>/Pt bilayers with in-plane magnetization due to Oersted fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Current-induced switching of YIG/Pt bilayers with in-plane magnetization due to Oersted fields|Johannes Mendil,Morgan Trassin,Quingquing Bu,Manfred Fiebig,Pietro Gambardella###
(1190236, 1190236)
Current-induced switching of YIG<missing VAR>/Pt bilayers with in-plane magnetization due to Oersted fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YI
###Current-induced switching of YIG/Pt bilayers with in-plane magnetization due to Oersted fields|Johannes Mendil,Morgan Trassin,Quingquing Bu,Manfred Fiebig,Pietro Gambardella###
(1190289, 1190290)
 We report on the switching of the in-plane magnetization of thin yttrium irongarnet (YIG)/Pt bilayers induced by an electrical current.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Current-induced switching of YIG/Pt bilayers with in-plane magnetization due to Oersted fields|Johannes Mendil,Morgan Trassin,Quingquing Bu,Manfred Fiebig,Pietro Gambardella###
(1190294, 1190294)
 We report on the switching of the in-plane magnetization of thin yttrium irongarnet (YIG)/Pt bilayers induced by an electrical current.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YI
###Current-induced switching of YIG/Pt bilayers with in-plane magnetization due to Oersted fields|Johannes Mendil,Morgan Trassin,Quingquing Bu,Manfred Fiebig,Pietro Gambardella###
(1190443, 1190444)
 The reversal of the magnetization occursat a current density as low as 105A/cm2 and magnetic fields of sim40muT<missing VAR>, two orders of magnitude smaller than in ferromagnetic metals,consistently with the weak uniaxial anisotropy of the YIG<missing VAR> layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YI
###Current-induced switching of YIG/Pt bilayers with in-plane magnetization due to Oersted fields|Johannes Mendil,Morgan Trassin,Quingquing Bu,Manfred Fiebig,Pietro Gambardella###
(1190484, 1190485)
 We use thetransverse component of the spin Hall magnetoresistance to sense the magneticorientation of YIG<missing VAR> while sweeping the current.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Current-induced switching of YIG/Pt bilayers with in-plane magnetization due to Oersted fields|Johannes Mendil,Morgan Trassin,Quingquing Bu,Manfred Fiebig,Pietro Gambardella###
(1190553, 1190553)
 Our measurements and simulationsreveal that the current-induced effective field responsible for switching isdue to the Oersted field generated by the current flowing in the Pt layerrather than by spin-orbit torques, and that the switching efficiency isinfluenced by pinning of the magnetic domains.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Strong magnetophonon oscillations in extra-large graphene|P. Kumaravadivel,M. T. Greenaway,D. Perello,A. Berdyugin,J. Birkbeck,J. Wengraf,S. Liu,J. H. Edgar,A. K. Geim,L. Eaves,R. Krishna Kumar###
(1190775, 1190775)
 In devices wider than tenmicrometres we observe distinct magnetoresistance oscillations that are causedby resonant scattering of Landau-quantised Dirac electrons by acoustic phononsin graphene.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Theoretical Study on Four-fold Symmetric Anisotropic Magnetoresistance Effect in Cubic Single-crystal Ferromagnetic Model|Yuta Yahagi,Daisuke Miura,Akimasa Sakuma###
(1190989, 1190989)
 In this study, we present a theoretical interpretation of the experimentalresults that the anisotropic magnetoresistance (AMR) effect has a four-foldsymmetric component, c<missing VAR>4, in cubic ferromagnetic metals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 4, ',', 0],[130.0, 3, 'd', 1],[316.0, 3, 'd', 4]

(SOI)
###Theoretical Study on Four-fold Symmetric Anisotropic Magnetoresistance Effect in Cubic Single-crystal Ferromagnetic Model|Yuta Yahagi,Daisuke Miura,Akimasa Sakuma###
(1191134, 1191138)
 The theoreticalmodel that we employ is based on the Anderson impurity model that includes afour-fold symmetric crystalline electric field, and we assume that theimpurities have 3d electron orbitals and spin--orbit interaction (SOI).
Featurization successful!
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 4, ',', 1],[15.0, 3, 'd', 0],[167.0, 3, 'd', 3]

C
###Theoretical Study on Four-fold Symmetric Anisotropic Magnetoresistance Effect in Cubic Single-crystal Ferromagnetic Model|Yuta Yahagi,Daisuke Miura,Akimasa Sakuma###
(1191149, 1191149)
 Wedescribe the D<missing VAR>C conductivity on the basis of the Kubo formula, and weinvestigate c<missing VAR>4 by analyzing the magnetization direction dependence of theresultant AMR ratio.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 4, ',', 2],[30.0, 3, 'd', 1],[156.0, 3, 'd', 2]

SOI
###Theoretical Study on Four-fold Symmetric Anisotropic Magnetoresistance Effect in Cubic Single-crystal Ferromagnetic Model|Yuta Yahagi,Daisuke Miura,Akimasa Sakuma###
(1191248, 1191250)
 Analytical and numerical calculations are performed; theanalytical calculation reveals that c<missing VAR>4 arises from the fourth-ordercontribution of the SOI, and the numerical calculation provides the parameterdependencies of c<missing VAR>4 in our model.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[202.0, 4, ',', 3],[129.0, 3, 'd', 2],[55.0, 3, 'd', 1]

SOI
###Theoretical Study on Four-fold Symmetric Anisotropic Magnetoresistance Effect in Cubic Single-crystal Ferromagnetic Model|Yuta Yahagi,Daisuke Miura,Akimasa Sakuma###
(1191313, 1191315)
 From the calculation results, we observethat the splitting of impurity 3d levels due to SOI is responsible for theexistence of c<missing VAR>4 in cubic ferromagnetic metals.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[267.0, 4, ',', 4],[194.0, 3, 'd', 3],[8.0, 3, 'd', 0]

YNiC2
###Charge density wave and large non-saturating magnetoresistance in YNiC$_2$ and LuNiC$_2$|Kamil K. Kolincio,Marta Roman,Tomasz Klimczuk###
(1191368, 1191371)
Charge density wave and large non-saturating magnetoresistance in YNiC2 and LuNiC2.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 318, 'K', 2],[144.0, 275, 'K', 2],[324.0, 1.9, 'K', 5],[330.0, 9, 'T', 5]

LuNiC2
###Charge density wave and large non-saturating magnetoresistance in YNiC$_2$ and LuNiC$_2$|Kamil K. Kolincio,Marta Roman,Tomasz Klimczuk###
(1191375, 1191378)
Charge density wave and large non-saturating magnetoresistance in YNiC2 and LuNiC2.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 318, 'K', 2],[137.0, 275, 'K', 2],[317.0, 1.9, 'K', 5],[323.0, 9, 'T', 5]

YNiC2
###Charge density wave and large non-saturating magnetoresistance in YNiC$_2$ and LuNiC$_2$|Kamil K. Kolincio,Marta Roman,Tomasz Klimczuk###
(1191408, 1191411)
 We report a study of physical properties of two quasi-low dimensional metalsYNiC2 and LuNiC2 including the investigation of transport,magnetotransport, galvanomagnetic and specific heat properties.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 318, 'K', 1],[104.0, 275, 'K', 1],[284.0, 1.9, 'K', 4],[290.0, 9, 'T', 4]

LuNiC2
###Charge density wave and large non-saturating magnetoresistance in YNiC$_2$ and LuNiC$_2$|Kamil K. Kolincio,Marta Roman,Tomasz Klimczuk###
(1191415, 1191418)
 We report a study of physical properties of two quasi-low dimensional metalsYNiC2 and LuNiC2 including the investigation of transport,magnetotransport, galvanomagnetic and specific heat properties.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 318, 'K', 1],[97.0, 275, 'K', 1],[277.0, 1.9, 'K', 4],[283.0, 9, 'T', 4]

In
###Charge density wave and large non-saturating magnetoresistance in YNiC$_2$ and LuNiC$_2$|Kamil K. Kolincio,Marta Roman,Tomasz Klimczuk###
(1191446, 1191446)
 In YNiC2 wereveal two subsequent transitions associated with the formation of weaklycoupled charge density wave at TCDW  318 K, and its locking in with thelattice at T<missing VAR>1  275 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 318, 'K', 0],[69.0, 275, 'K', 0],[249.0, 1.9, 'K', 3],[255.0, 9, 'T', 3]

YNiC2
###Charge density wave and large non-saturating magnetoresistance in YNiC$_2$ and LuNiC$_2$|Kamil K. Kolincio,Marta Roman,Tomasz Klimczuk###
(1191448, 1191451)
 In YNiC2 wereveal two subsequent transitions associated with the formation of weaklycoupled charge density wave at TCDW  318 K, and its locking in with thelattice at T<missing VAR>1  275 K.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 318, 'K', 0],[64.0, 275, 'K', 0],[244.0, 1.9, 'K', 3],[250.0, 9, 'T', 3]

W
###Charge density wave and large non-saturating magnetoresistance in YNiC$_2$ and LuNiC$_2$|Kamil K. Kolincio,Marta Roman,Tomasz Klimczuk###
(1191490, 1191490)
 In YNiC2 wereveal two subsequent transitions associated with the formation of weaklycoupled charge density wave at TCDW  318 K, and its locking in with thelattice at T<missing VAR>1  275 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 318, 'K', 0],[25.0, 275, 'K', 0],[205.0, 1.9, 'K', 3],[211.0, 9, 'T', 3]

NiC2
###Charge density wave and large non-saturating magnetoresistance in YNiC$_2$ and LuNiC$_2$|Kamil K. Kolincio,Marta Roman,Tomasz Klimczuk###
(1191566, 1191568)
 These characteristic temperatures follow thepreviously proposed linear scaling with the unit cell volume, demonstrating itsvalidity extended beyond the lanthanide-based R<missing VAR>NiC2.
Featurization terminated normally.
0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 318, 'K', 1],[51.0, 275, 'K', 1],[127.0, 1.9, 'K', 2],[133.0, 9, 'T', 2]

YNiC2
###Charge density wave and large non-saturating magnetoresistance in YNiC$_2$ and LuNiC$_2$|Kamil K. Kolincio,Marta Roman,Tomasz Klimczuk###
(1191672, 1191675)
 This effect gives rise to substantialenhancement of magnetoresistance, reaching 470 % for YNiC2 and 50 % forLuNiC2 at T<missing VAR>  1.9 K and B  9 T.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[180.0, 318, 'K', 3],[157.0, 275, 'K', 3],[20.0, 1.9, 'K', 0],[26.0, 9, 'T', 0]

LuNiC2
###Charge density wave and large non-saturating magnetoresistance in YNiC$_2$ and LuNiC$_2$|Kamil K. Kolincio,Marta Roman,Tomasz Klimczuk###
(1191686, 1191689)
 This effect gives rise to substantialenhancement of magnetoresistance, reaching 470 % for YNiC2 and 50 % forLuNiC2 at T<missing VAR>  1.9 K and B  9 T.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[194.0, 318, 'K', 3],[171.0, 275, 'K', 3],[6.0, 1.9, 'K', 0],[12.0, 9, 'T', 0]

B
###Charge density wave and large non-saturating magnetoresistance in YNiC$_2$ and LuNiC$_2$|Kamil K. Kolincio,Marta Roman,Tomasz Klimczuk###
(1191699, 1191699)
 This effect gives rise to substantialenhancement of magnetoresistance, reaching 470 % for YNiC2 and 50 % forLuNiC2 at T<missing VAR>  1.9 K and B  9 T.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[207.0, 318, 'K', 3],[184.0, 275, 'K', 3],[4.0, 1.9, 'K', 0],[2.0, 9, 'T', 0]

K
###Magnetophonon spectroscopy of Dirac Fermion scattering by transverse and longitudinal acoustic phonons in graphene|M. T. Greenaway,R. Krishna Kumar,P. Kumaravadivel,A. K. Geim,L. Eaves###
(1191980, 1191980)
 We demonstrate that the L<missing VAR>A and T<missing VAR>A phonon speeds and the electron-phononcoupling strengths determined from the magnetophonon resonance measurementsalso provide an excellent fit to the measured dependence of the resistivity atzero magnetic field over a temperature range of 4-150 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

UTe2
###Field-reentrant superconductivity close to a metamagnetic transition in the heavy-fermion superconductor UTe$_2$|Georg Knebel,William Knafo,Alexandre Pourret,Qun Niu,Michal Vališka,Daniel Braithwaite,Gérard Lapertot,Marc Nardone,Abdelaziz Zitouni,Sanu Mishra,Ilya Sheikin,Gabriel Seyfahrt,Jean-Pascal Brison,Dai Aoki,Jacques Flouquet###
(1192101, 1192103)
Field-reentrant superconductivity close to a metamagnetic transition in the heavy-fermion superconductor UTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

UTe2
###Field-reentrant superconductivity close to a metamagnetic transition in the heavy-fermion superconductor UTe$_2$|Georg Knebel,William Knafo,Alexandre Pourret,Qun Niu,Michal Vališka,Daniel Braithwaite,Gérard Lapertot,Marc Nardone,Abdelaziz Zitouni,Sanu Mishra,Ilya Sheikin,Gabriel Seyfahrt,Jean-Pascal Brison,Dai Aoki,Jacques Flouquet###
(1192139, 1192141)
 We present a study of the upper critical field of the newly discovered heavyfermion superconductor UTe2 by magnetoresistivity measurements in pulsedmagnetic fields up to 60T<missing VAR> and static magnetic fields up to 35T<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Field-reentrant superconductivity close to a metamagnetic transition in the heavy-fermion superconductor UTe$_2$|Georg Knebel,William Knafo,Alexandre Pourret,Qun Niu,Michal Vališka,Daniel Braithwaite,Gérard Lapertot,Marc Nardone,Abdelaziz Zitouni,Sanu Mishra,Ilya Sheikin,Gabriel Seyfahrt,Jean-Pascal Brison,Dai Aoki,Jacques Flouquet###
(1192204, 1192204)
 We show thatsuperconductivity survives up to the metamagnetic transition at Hrm m<missing VAR>approx 35T<missing VAR> at low temperature.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Field-reentrant superconductivity close to a metamagnetic transition in the heavy-fermion superconductor UTe$_2$|Georg Knebel,William Knafo,Alexandre Pourret,Qun Niu,Michal Vališka,Daniel Braithwaite,Gérard Lapertot,Marc Nardone,Abdelaziz Zitouni,Sanu Mishra,Ilya Sheikin,Gabriel Seyfahrt,Jean-Pascal Brison,Dai Aoki,Jacques Flouquet###
(1192224, 1192224)
 Above Hrm m<missing VAR> superconductivity issuppressed.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Field-reentrant superconductivity close to a metamagnetic transition in the heavy-fermion superconductor UTe$_2$|Georg Knebel,William Knafo,Alexandre Pourret,Qun Niu,Michal Vališka,Daniel Braithwaite,Gérard Lapertot,Marc Nardone,Abdelaziz Zitouni,Sanu Mishra,Ilya Sheikin,Gabriel Seyfahrt,Jean-Pascal Brison,Dai Aoki,Jacques Flouquet###
(1192237, 1192237)
 At higher temperature superconductivity is enhanced under magneticfield leading to reentrance of superconductivity or an almost temperatureindependent increase of Hrm c<missing VAR>2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Field-reentrant superconductivity close to a metamagnetic transition in the heavy-fermion superconductor UTe$_2$|Georg Knebel,William Knafo,Alexandre Pourret,Qun Niu,Michal Vališka,Daniel Braithwaite,Gérard Lapertot,Marc Nardone,Abdelaziz Zitouni,Sanu Mishra,Ilya Sheikin,Gabriel Seyfahrt,Jean-Pascal Brison,Dai Aoki,Jacques Flouquet###
(1192281, 1192281)
 At higher temperature superconductivity is enhanced under magneticfield leading to reentrance of superconductivity or an almost temperatureindependent increase of Hrm c<missing VAR>2.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Field-reentrant superconductivity close to a metamagnetic transition in the heavy-fermion superconductor UTe$_2$|Georg Knebel,William Knafo,Alexandre Pourret,Qun Niu,Michal Vališka,Daniel Braithwaite,Gérard Lapertot,Marc Nardone,Abdelaziz Zitouni,Sanu Mishra,Ilya Sheikin,Gabriel Seyfahrt,Jean-Pascal Brison,Dai Aoki,Jacques Flouquet###
(1192385, 1192385)
 A key ingredient for the field-reinforcement ofsuperconductivity on approaching Hrm m<missing VAR> appears to be an immediateinterplay with magnetic fluctuations and a possible Fermi-surfacereconstruction.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Unraveling the Effect of Electron-Electron Interaction on Electronic Transport in High-Mobility Stannate Films|Jin Yue,Laxman R. Thoutam,Abhinav Prakash,Tianqi Wang,Bharat Jalan###
(1192483, 1192483)
 Contrary to the common belief that electron-electron interaction (EEI) shouldbe negligible in s<missing VAR>-orbital-based conductors, we demonstrated that the EEIeffect could play a significant role on electronic transport leading to themisinterpretation of the Hall data.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 50, 'K', 1],[179.0, 450, 'nm', 2],[182.0, 1.8, 'K', 2]

I
###Unraveling the Effect of Electron-Electron Interaction on Electronic Transport in High-Mobility Stannate Films|Jin Yue,Laxman R. Thoutam,Abhinav Prakash,Tianqi Wang,Bharat Jalan###
(1192514, 1192514)
 Contrary to the common belief that electron-electron interaction (EEI) shouldbe negligible in s<missing VAR>-orbital-based conductors, we demonstrated that the EEIeffect could play a significant role on electronic transport leading to themisinterpretation of the Hall data.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 50, 'K', 1],[148.0, 450, 'nm', 2],[151.0, 1.8, 'K', 2]

I
###Unraveling the Effect of Electron-Electron Interaction on Electronic Transport in High-Mobility Stannate Films|Jin Yue,Laxman R. Thoutam,Abhinav Prakash,Tianqi Wang,Bharat Jalan###
(1192563, 1192563)
 We show that the EEI effect is primarilyresponsible for an increase in the Hall coefficient in the La-doped SrSnO3films below 50 K accompanied by an increase in the sheet resistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 50, 'K', 0],[99.0, 450, 'nm', 1],[102.0, 1.8, 'K', 1]

La
###Unraveling the Effect of Electron-Electron Interaction on Electronic Transport in High-Mobility Stannate Films|Jin Yue,Laxman R. Thoutam,Abhinav Prakash,Tianqi Wang,Bharat Jalan###
(1192592, 1192592)
 We show that the EEI effect is primarilyresponsible for an increase in the Hall coefficient in the La-doped SrSnO3films below 50 K accompanied by an increase in the sheet resistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 50, 'K', 0],[70.0, 450, 'nm', 1],[73.0, 1.8, 'K', 1]

SrSnO3
###Unraveling the Effect of Electron-Electron Interaction on Electronic Transport in High-Mobility Stannate Films|Jin Yue,Laxman R. Thoutam,Abhinav Prakash,Tianqi Wang,Bharat Jalan###
(1192596, 1192599)
 We show that the EEI effect is primarilyresponsible for an increase in the Hall coefficient in the La-doped SrSnO3films below 50 K accompanied by an increase in the sheet resistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 50, 'K', 0],[63.0, 450, 'nm', 1],[66.0, 1.8, 'K', 1]

La
###Unraveling the Effect of Electron-Electron Interaction on Electronic Transport in High-Mobility Stannate Films|Jin Yue,Laxman R. Thoutam,Abhinav Prakash,Tianqi Wang,Bharat Jalan###
(1192699, 1192699)
 Thequantitative analysis of the magnetoresistance (MR) data yielded a large phasecoherence length of electrons exceeding 450 nm at 1.8 K and revealed theelectron-electron interaction being accountable for breaking of electron phasecoherency in La-doped SrSnO3 films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 50, 'K', 1],[37.0, 450, 'nm', 0],[34.0, 1.8, 'K', 0]

SrSnO3
###Unraveling the Effect of Electron-Electron Interaction on Electronic Transport in High-Mobility Stannate Films|Jin Yue,Laxman R. Thoutam,Abhinav Prakash,Tianqi Wang,Bharat Jalan###
(1192703, 1192706)
 Thequantitative analysis of the magnetoresistance (MR) data yielded a large phasecoherence length of electrons exceeding 450 nm at 1.8 K and revealed theelectron-electron interaction being accountable for breaking of electron phasecoherency in La-doped SrSnO3 films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 50, 'K', 1],[41.0, 450, 'nm', 0],[38.0, 1.8, 'K', 0]

CdO
###Interface ferromagnetism and anomalous Hall effect of CdO/ferromagnetic insulator heterostructures|Yang Ma,Yu Yun,Yuehui Li,Wenyu Xing,Yunyan Yao,Ranran Cai,Yangyang Chen,Yuan Ji,Peng Gao,Xin-Cheng Xie,Wei Han###
(1192803, 1192804)
Interface ferromagnetism and anomalous Hall effect of CdO/ferromagnetic insulator heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Interface ferromagnetism and anomalous Hall effect of CdO/ferromagnetic insulator heterostructures|Yang Ma,Yu Yun,Yuehui Li,Wenyu Xing,Yunyan Yao,Ranran Cai,Yangyang Chen,Yuan Ji,Peng Gao,Xin-Cheng Xie,Wei Han###
(1192832, 1192832)
 The experimental observation of quantum anomalous Hall effect (Q<missing VAR>AHE) inmagnetic topological insulators has stimulated enormous interest incondensed-matter physics and materials science.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Interface ferromagnetism and anomalous Hall effect of CdO/ferromagnetic insulator heterostructures|Yang Ma,Yu Yun,Yuehui Li,Wenyu Xing,Yunyan Yao,Ranran Cai,Yangyang Chen,Yuan Ji,Peng Gao,Xin-Cheng Xie,Wei Han###
(1192886, 1192886)
 For the purpose of realizinghigh-temperature Q<missing VAR>AHE<missing VAR>, several material candidates have been proposed, amongwhich the interface states in the CdO/ferromagnetic insulator heterostructuresare particularly interesting and favorable for technological applications.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CdO
###Interface ferromagnetism and anomalous Hall effect of CdO/ferromagnetic insulator heterostructures|Yang Ma,Yu Yun,Yuehui Li,Wenyu Xing,Yunyan Yao,Ranran Cai,Yangyang Chen,Yuan Ji,Peng Gao,Xin-Cheng Xie,Wei Han###
(1192918, 1192919)
 For the purpose of realizinghigh-temperature Q<missing VAR>AHE<missing VAR>, several material candidates have been proposed, amongwhich the interface states in the CdO/ferromagnetic insulator heterostructuresare particularly interesting and favorable for technological applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe3O4/CdO/Fe3O4
###Interface ferromagnetism and anomalous Hall effect of CdO/ferromagnetic insulator heterostructures|Yang Ma,Yu Yun,Yuehui Li,Wenyu Xing,Yunyan Yao,Ranran Cai,Yangyang Chen,Yuan Ji,Peng Gao,Xin-Cheng Xie,Wei Han###
(1192980, 1192991)
Here, we report the experimental observation of the interfacial ferromagnetismand anomalous Hall effect in the Fe3O4/CdO/Fe3O4 heterostructures grown viaoxide molecular-beam epitaxy.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

CdO
###Interface ferromagnetism and anomalous Hall effect of CdO/ferromagnetic insulator heterostructures|Yang Ma,Yu Yun,Yuehui Li,Wenyu Xing,Yunyan Yao,Ranran Cai,Yangyang Chen,Yuan Ji,Peng Gao,Xin-Cheng Xie,Wei Han###
(1193017, 1193018)
 Systematical variation of the CdO thicknessreveals the interface ferromagnetism as the major cause for the observed planarmagnetoresistance and anomalous Hall effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Interface ferromagnetism and anomalous Hall effect of CdO/ferromagnetic insulator heterostructures|Yang Ma,Yu Yun,Yuehui Li,Wenyu Xing,Yunyan Yao,Ranran Cai,Yangyang Chen,Yuan Ji,Peng Gao,Xin-Cheng Xie,Wei Han###
(1193092, 1193092)
 Our results might pave the way toengineer oxide interface states for the exploration of Q<missing VAR>AHE<missing VAR> towards exoticquantum-physical phenomena and potential applications.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NO
###Magnetoresistive RAM for error resilient XNOR-Nets|Michail Tzoufras,Marcin Gajek,Andrew Walker###
(1193134, 1193135)
Magnetoresistive RAM for error resilient X<missing VAR>NOR<missing VAR>-Nets.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, -4, ',', 1],[65.0, -10, ',', 1],[74.0, -100, ',', 1]

In
###Magnetoresistive RAM for error resilient XNOR-Nets|Michail Tzoufras,Marcin Gajek,Andrew Walker###
(1193167, 1193167)
 We trained three Binarized Convolutional Neural Network architectures(LeNet-4, Network-In-Network, AlexNet) on a variety of datasets (M<missing VAR>NIST<missing VAR>,CIFAR<missing VAR>-10, CIFAR<missing VAR>-100, extended SVHN, ImageNet) using error-prone activations andtested them without errors to study the resilience of the training process.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, -4, ',', 0],[33.0, -10, ',', 0],[42.0, -100, ',', 0]

NIS
###Magnetoresistive RAM for error resilient XNOR-Nets|Michail Tzoufras,Marcin Gajek,Andrew Walker###
(1193188, 1193190)
 We trained three Binarized Convolutional Neural Network architectures(LeNet-4, Network-In-Network, AlexNet) on a variety of datasets (M<missing VAR>NIST<missing VAR>,CIFAR<missing VAR>-10, CIFAR<missing VAR>-100, extended SVHN, ImageNet) using error-prone activations andtested them without errors to study the resilience of the training process.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, -4, ',', 0],[10.0, -10, ',', 0],[19.0, -100, ',', 0]

CIF
###Magnetoresistive RAM for error resilient XNOR-Nets|Michail Tzoufras,Marcin Gajek,Andrew Walker###
(1193195, 1193197)
 We trained three Binarized Convolutional Neural Network architectures(LeNet-4, Network-In-Network, AlexNet) on a variety of datasets (M<missing VAR>NIST<missing VAR>,CIFAR<missing VAR>-10, CIFAR<missing VAR>-100, extended SVHN, ImageNet) using error-prone activations andtested them without errors to study the resilience of the training process.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, -4, ',', 0],[3.0, -10, ',', 0],[12.0, -100, ',', 0]

CIF
###Magnetoresistive RAM for error resilient XNOR-Nets|Michail Tzoufras,Marcin Gajek,Andrew Walker###
(1193204, 1193206)
 We trained three Binarized Convolutional Neural Network architectures(LeNet-4, Network-In-Network, AlexNet) on a variety of datasets (M<missing VAR>NIST<missing VAR>,CIFAR<missing VAR>-10, CIFAR<missing VAR>-100, extended SVHN, ImageNet) using error-prone activations andtested them without errors to study the resilience of the training process.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, -4, ',', 0],[4.0, -10, ',', 0],[3.0, -100, ',', 0]

SVHN
###Magnetoresistive RAM for error resilient XNOR-Nets|Michail Tzoufras,Marcin Gajek,Andrew Walker###
(1193215, 1193218)
 We trained three Binarized Convolutional Neural Network architectures(LeNet-4, Network-In-Network, AlexNet) on a variety of datasets (M<missing VAR>NIST<missing VAR>,CIFAR<missing VAR>-10, CIFAR<missing VAR>-100, extended SVHN, ImageNet) using error-prone activations andtested them without errors to study the resilience of the training process.
Featurization terminated normally.
0.25,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, -4, ',', 0],[15.0, -10, ',', 0],[6.0, -100, ',', 0]

B
###Magnetoresistive RAM for error resilient XNOR-Nets|Michail Tzoufras,Marcin Gajek,Andrew Walker###
(1193385, 1193385)
 The ability to operate with high BE<missing VAR>Rs is critical for reducing powerconsumption in existing hardware and for facilitating emerging memorytechnologies.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[224.0, -4, ',', 3],[185.0, -10, ',', 3],[176.0, -100, ',', 3]

B
###Magnetoresistive RAM for error resilient XNOR-Nets|Michail Tzoufras,Marcin Gajek,Andrew Walker###
(1193434, 1193434)
 We discuss how operating at moderate BER can enableMagnetoresistive RAM with higher endurance, speed and density.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[273.0, -4, ',', 4],[234.0, -10, ',', 4],[225.0, -100, ',', 4]

MgO/Fe0.8Mn0.2
###Spin-Orbit Torque in a Single Ferromagnetic Layer with Large Spin-Orbit Coupling|Ziyan Luo,Qi Zhang,Yanjun Xu,Yumeng Yang,Xinhai Zhang,Yihong Wu###
(1193585, 1193591)
 Here, we report the presence of a spintorque in a single ferromagnetic layer in both asymmetric MgO/Fe0.8Mn0.2 andsymmetric MgO/Fe0.8Mn0.2/MgO structures, which manifests itself in the form ofan effective field transverse to the charge current.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

MgO/Fe0.8Mn0.2/MgO
###Spin-Orbit Torque in a Single Ferromagnetic Layer with Large Spin-Orbit Coupling|Ziyan Luo,Qi Zhang,Yanjun Xu,Yumeng Yang,Xinhai Zhang,Yihong Wu###
(1193598, 1193607)
 Here, we report the presence of a spintorque in a single ferromagnetic layer in both asymmetric MgO/Fe0.8Mn0.2 andsymmetric MgO/Fe0.8Mn0.2/MgO structures, which manifests itself in the form ofan effective field transverse to the charge current.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

B
###Intrinsic resistance peaks in AB-stacked multilayer graphene with odd number of layers|Tomoaki Nakasuga,Taiki Hirahara,Kota Horii,Ryoya Ebisuoka,Shingo Tajima,Kenji Watanabe,Takashi Taniguchi,Ryuta Yagi###
(1193859, 1193859)
Intrinsic resistance peaks in AB-stacked multilayer graphene with odd number of layers.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Intrinsic resistance peaks in AB-stacked multilayer graphene with odd number of layers|Tomoaki Nakasuga,Taiki Hirahara,Kota Horii,Ryoya Ebisuoka,Shingo Tajima,Kenji Watanabe,Takashi Taniguchi,Ryuta Yagi###
(1193927, 1193927)
 The intrinsic resistance peak (ridge) structures were recently found toappear in the carrier density dependence plot of the resistance of theAB-stacked multilayer graphene with even numbers of layers.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Intrinsic resistance peaks in AB-stacked multilayer graphene with odd number of layers|Tomoaki Nakasuga,Taiki Hirahara,Kota Horii,Ryoya Ebisuoka,Shingo Tajima,Kenji Watanabe,Takashi Taniguchi,Ryuta Yagi###
(1193984, 1193984)
 Here, these structures werestudied in AB-stacked multilayer graphene with odd numbers of layers (5 and 7layers) by performing experiments using encapsulated high-quality graphenesamples equipped with top and bottom gate electrodes.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Tunneling Anisotropic Magnetoresistance in Ferroelectric Tunnel Junctions|A. Alexandrov,M. Ye. Zhuravlev,Evgeny Y. Tsymbal###
(1194286, 1194286)
 Using a simple quantum-mechanical model, we explore a tunneling anisotropicmagnetoresistance (TAMR) effect in ferroelectric tunnel junctions (FT<missing VAR>Js) with aferromagnetic electrode and a ferroelectric barrier layer, which spontaneouspolarization gives rise to the Rashba and Dresselhaus spin-orbit coupling(SOC).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(SOC)
###Tunneling Anisotropic Magnetoresistance in Ferroelectric Tunnel Junctions|A. Alexandrov,M. Ye. Zhuravlev,Evgeny Y. Tsymbal###
(1194339, 1194343)
 Using a simple quantum-mechanical model, we explore a tunneling anisotropicmagnetoresistance (TAMR) effect in ferroelectric tunnel junctions (FT<missing VAR>Js) with aferromagnetic electrode and a ferroelectric barrier layer, which spontaneouspolarization gives rise to the Rashba and Dresselhaus spin-orbit coupling(SOC).
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Tunneling Anisotropic Magnetoresistance in Ferroelectric Tunnel Junctions|A. Alexandrov,M. Ye. Zhuravlev,Evgeny Y. Tsymbal###
(1194380, 1194380)
 For asymmetric FT<missing VAR>Js, which electrodes have differentwork functions, the built-in electric field affects the SOC parameters andleads to TAMR dependent on ferroelectric polarization direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SOC
###Tunneling Anisotropic Magnetoresistance in Ferroelectric Tunnel Junctions|A. Alexandrov,M. Ye. Zhuravlev,Evgeny Y. Tsymbal###
(1194413, 1194415)
 For asymmetric FT<missing VAR>Js, which electrodes have differentwork functions, the built-in electric field affects the SOC parameters andleads to TAMR dependent on ferroelectric polarization direction.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SOC
###Tunneling Anisotropic Magnetoresistance in Ferroelectric Tunnel Junctions|A. Alexandrov,M. Ye. Zhuravlev,Evgeny Y. Tsymbal###
(1194444, 1194446)
 The SOC changewith polarization switching affects tunneling conductance, revealing a newmechanism of tunneling electroresistance (TER).
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Tunneling Anisotropic Magnetoresistance in Ferroelectric Tunnel Junctions|A. Alexandrov,M. Ye. Zhuravlev,Evgeny Y. Tsymbal###
(1194499, 1194499)
 These results demonstrate newfunctionalities of FT<missing VAR>Js which can be explored experimentally and used inelectronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PbNb0.12Ti0.88O3
###Magnetoresistance in Metallic Ferroelectrics|Jiesu Wang,Hongbao Yao,Kuijuan Jin,Er-Jia Guo,Qinghua Zhang,Chao Ma,Lin Gu,Pazhanivelu Venkatachalam,Jiali Zhao,Jiaou Wang,Hassen Riahi,Haizhong Guo,Chen Ge,Can Wang,Guozhen Yang###
(1194670, 1194676)
 Here we report the coexistence offerroelectricity and magnetoresistance (MR) in the metallic PbNb0.12Ti0.88O3(PNT<missing VAR>O) thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.176,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.024,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 50, '%', 2]

PN
###Magnetoresistance in Metallic Ferroelectrics|Jiesu Wang,Hongbao Yao,Kuijuan Jin,Er-Jia Guo,Qinghua Zhang,Chao Ma,Lin Gu,Pazhanivelu Venkatachalam,Jiali Zhao,Jiaou Wang,Hassen Riahi,Haizhong Guo,Chen Ge,Can Wang,Guozhen Yang###
(1194680, 1194681)
 Here we report the coexistence offerroelectricity and magnetoresistance (MR) in the metallic PbNb0.12Ti0.88O3(PNT<missing VAR>O) thin films.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 50, '%', 2]

O
###Magnetoresistance in Metallic Ferroelectrics|Jiesu Wang,Hongbao Yao,Kuijuan Jin,Er-Jia Guo,Qinghua Zhang,Chao Ma,Lin Gu,Pazhanivelu Venkatachalam,Jiali Zhao,Jiaou Wang,Hassen Riahi,Haizhong Guo,Chen Ge,Can Wang,Guozhen Yang###
(1194683, 1194683)
 Here we report the coexistence offerroelectricity and magnetoresistance (MR) in the metallic PbNb0.12Ti0.88O3(PNT<missing VAR>O) thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 50, '%', 2]

PN
###Magnetoresistance in Metallic Ferroelectrics|Jiesu Wang,Hongbao Yao,Kuijuan Jin,Er-Jia Guo,Qinghua Zhang,Chao Ma,Lin Gu,Pazhanivelu Venkatachalam,Jiali Zhao,Jiaou Wang,Hassen Riahi,Haizhong Guo,Chen Ge,Can Wang,Guozhen Yang###
(1194709, 1194710)
 We found that the conducting and magnetic responses of PNT<missing VAR>Ofilms are highly asymmetric.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 50, '%', 1]

O
###Magnetoresistance in Metallic Ferroelectrics|Jiesu Wang,Hongbao Yao,Kuijuan Jin,Er-Jia Guo,Qinghua Zhang,Chao Ma,Lin Gu,Pazhanivelu Venkatachalam,Jiali Zhao,Jiaou Wang,Hassen Riahi,Haizhong Guo,Chen Ge,Can Wang,Guozhen Yang###
(1194712, 1194712)
 We found that the conducting and magnetic responses of PNT<missing VAR>Ofilms are highly asymmetric.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 50, '%', 1]

PN
###Magnetoresistance in Metallic Ferroelectrics|Jiesu Wang,Hongbao Yao,Kuijuan Jin,Er-Jia Guo,Qinghua Zhang,Chao Ma,Lin Gu,Pazhanivelu Venkatachalam,Jiali Zhao,Jiaou Wang,Hassen Riahi,Haizhong Guo,Chen Ge,Can Wang,Guozhen Yang###
(1194849, 1194850)
 Such unique behavior is attributed tothe moving electron caused effective magnetic field which couples with thespins of electrons, which form a dynamic multiferroic state in the metallicPNT<missing VAR>O.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 50, '%', 1]

O
###Magnetoresistance in Metallic Ferroelectrics|Jiesu Wang,Hongbao Yao,Kuijuan Jin,Er-Jia Guo,Qinghua Zhang,Chao Ma,Lin Gu,Pazhanivelu Venkatachalam,Jiali Zhao,Jiaou Wang,Hassen Riahi,Haizhong Guo,Chen Ge,Can Wang,Guozhen Yang###
(1194852, 1194852)
 Such unique behavior is attributed tothe moving electron caused effective magnetic field which couples with thespins of electrons, which form a dynamic multiferroic state in the metallicPNT<missing VAR>O.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 50, '%', 1]

BK
###Charging effects and anomalous resistive features of superconducting boron doped diamond films|Christopher Coleman,Somnath Bhattacharyya###
(1195061, 1195062)
 We establish a temperature dependence of this resistive phase similar towhat has been reported for in Josephson junction arrays and other granularsuperconductors where the charge duel of the Berezinskii-Kosterlitz-Thouless(BKT) transition has been observed.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BK
###Charging effects and anomalous resistive features of superconducting boron doped diamond films|Christopher Coleman,Somnath Bhattacharyya###
(1195139, 1195140)
Pronounced temperature dependent hysteresis in the current voltage sweeps attemperatures below the determined BKT<missing VAR> critical point are related to pinning ofcharge defects.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BK
###Charging effects and anomalous resistive features of superconducting boron doped diamond films|Christopher Coleman,Somnath Bhattacharyya###
(1195186, 1195187)
 It is shown that these collective features allude to aCharge-BKT<missing VAR> transition between charge and anti-charge analogues.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr2IrO4
###Giant anisotropic magnetoresistance and nonvolatile memory in canted antiferromagnet Sr2IrO4|Haowen Wang,Chengliang Lu,Jun Chen,Yong Liu,S. L. Yuan,Sang-Wook Cheong,Shuai Dong,Jun-Ming Liu###
(1195231, 1195235)
Giant anisotropic magnetoresistance and nonvolatile memory in canted antiferromagnet Sr2IrO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 160, '%', 3],[326.0, 1, '%', 5]

F
###Giant anisotropic magnetoresistance and nonvolatile memory in canted antiferromagnet Sr2IrO4|Haowen Wang,Chengliang Lu,Jun Chen,Yong Liu,S. L. Yuan,Sang-Wook Cheong,Shuai Dong,Jun-Ming Liu###
(1195302, 1195302)
 While the control of antiferromagnetic (AFM)orders has been realized by various means, applicably appreciatedfunctionalities on the readout side of AFM<missing VAR>-based devices are urgently desired.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 160, '%', 1],[259.0, 1, '%', 3]

F
###Giant anisotropic magnetoresistance and nonvolatile memory in canted antiferromagnet Sr2IrO4|Haowen Wang,Chengliang Lu,Jun Chen,Yong Liu,S. L. Yuan,Sang-Wook Cheong,Shuai Dong,Jun-Ming Liu###
(1195340, 1195340)
 While the control of antiferromagnetic (AFM)orders has been realized by various means, applicably appreciatedfunctionalities on the readout side of AFM<missing VAR>-based devices are urgently desired.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 160, '%', 1],[221.0, 1, '%', 3]

F
###Giant anisotropic magnetoresistance and nonvolatile memory in canted antiferromagnet Sr2IrO4|Haowen Wang,Chengliang Lu,Jun Chen,Yong Liu,S. L. Yuan,Sang-Wook Cheong,Shuai Dong,Jun-Ming Liu###
(1195404, 1195404)
Here, we report the remarkably enhanced anisotropic magnetoresistance (AMR) asgiant as  160% in a simple resistor structure made of AFM<missing VAR> Sr2IrO4 withoutauxiliary reference layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 160, '%', 0],[157.0, 1, '%', 2]

Sr2IrO4
###Giant anisotropic magnetoresistance and nonvolatile memory in canted antiferromagnet Sr2IrO4|Haowen Wang,Chengliang Lu,Jun Chen,Yong Liu,S. L. Yuan,Sang-Wook Cheong,Shuai Dong,Jun-Ming Liu###
(1195407, 1195411)
Here, we report the remarkably enhanced anisotropic magnetoresistance (AMR) asgiant as  160% in a simple resistor structure made of AFM<missing VAR> Sr2IrO4 withoutauxiliary reference layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 160, '%', 0],[150.0, 1, '%', 2]

Ga
###Giant anisotropic magnetoresistance and nonvolatile memory in canted antiferromagnet Sr2IrO4|Haowen Wang,Chengliang Lu,Jun Chen,Yong Liu,S. L. Yuan,Sang-Wook Cheong,Shuai Dong,Jun-Ming Liu###
(1195564, 1195564)
Furthermore, we demonstrate the bistable nonvolatile memory states that can beswitched in-situ without the inconvenient heat-assisted procedure, and robustlypreserved even at zero magnetic field, due to the modified interlayer couplingby 1% Ga-doping in Sr2IrO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 160, '%', 2],[3.0, 1, '%', 0]

Sr2IrO4
###Giant anisotropic magnetoresistance and nonvolatile memory in canted antiferromagnet Sr2IrO4|Haowen Wang,Chengliang Lu,Jun Chen,Yong Liu,S. L. Yuan,Sang-Wook Cheong,Shuai Dong,Jun-Ming Liu###
(1195570, 1195574)
Furthermore, we demonstrate the bistable nonvolatile memory states that can beswitched in-situ without the inconvenient heat-assisted procedure, and robustlypreserved even at zero magnetic field, due to the modified interlayer couplingby 1% Ga-doping in Sr2IrO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[184.0, 160, '%', 2],[9.0, 1, '%', 0]

F
###Giant anisotropic magnetoresistance and nonvolatile memory in canted antiferromagnet Sr2IrO4|Haowen Wang,Chengliang Lu,Jun Chen,Yong Liu,S. L. Yuan,Sang-Wook Cheong,Shuai Dong,Jun-Ming Liu###
(1195595, 1195595)
 These findings represent a straightforward steptoward the AFM<missing VAR> spintronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[209.0, 160, '%', 3],[34.0, 1, '%', 1]

TaAs2
###Quantum oscillation of thermal conductivity and violation of Weidemann-Franz law in TaAs$_2$ and NbAs$_2$|X. Rao,X. Zhao,X. -Y. Wang,H. L. Che,L. G. Chu,G. Hussain,T. -L. Xia,X. F. Sun###
(1195635, 1195637)
Quantum oscillation of thermal conductivity and violation of Weidemann-Franz law in TaAs2 and NbAs2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[187.0, 14, 'T', 3]

NbAs2
###Quantum oscillation of thermal conductivity and violation of Weidemann-Franz law in TaAs$_2$ and NbAs$_2$|X. Rao,X. Zhao,X. -Y. Wang,H. L. Che,L. G. Chu,G. Hussain,T. -L. Xia,X. F. Sun###
(1195641, 1195643)
Quantum oscillation of thermal conductivity and violation of Weidemann-Franz law in TaAs2 and NbAs2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 14, 'T', 3]

TaAs2
###Quantum oscillation of thermal conductivity and violation of Weidemann-Franz law in TaAs$_2$ and NbAs$_2$|X. Rao,X. Zhao,X. -Y. Wang,H. L. Che,L. G. Chu,G. Hussain,T. -L. Xia,X. F. Sun###
(1195691, 1195693)
 We report a study of thermal conductivity and resistivity at ultra-lowtemperatures and in high magnetic fields for semi-metal materials TaAs2 andNbAs2 by using single crystal samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 14, 'T', 2]

NbAs2
###Quantum oscillation of thermal conductivity and violation of Weidemann-Franz law in TaAs$_2$ and NbAs$_2$|X. Rao,X. Zhao,X. -Y. Wang,H. L. Che,L. G. Chu,G. Hussain,T. -L. Xia,X. F. Sun###
(1195698, 1195700)
 We report a study of thermal conductivity and resistivity at ultra-lowtemperatures and in high magnetic fields for semi-metal materials TaAs2 andNbAs2 by using single crystal samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 14, 'T', 2]

In
###Quantum oscillation of thermal conductivity and violation of Weidemann-Franz law in TaAs$_2$ and NbAs$_2$|X. Rao,X. Zhao,X. -Y. Wang,H. L. Che,L. G. Chu,G. Hussain,T. -L. Xia,X. F. Sun###
(1195771, 1195771)
 In addition, not only the resistivity but also thethermal conductivity display clear quantum oscillations behavior at subKelvintemperatures and in magnetic fields up to 14 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 14, 'T', 0]

P
###Proximity magnetoresistance in graphene induced by magnetic insulators|D. A. Solis,A. Hallal,X. Waintal,M. Chshiev###
(1195969, 1195969)
 We demonstrate the existence of Giant proximity magnetoresistance (PMR)effect in a graphene spin valve where spin polarization is induced by a nearbymagnetic insulator.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 100, '%', 2],[213.0, 22, '%', 3],[218.0, 77, '%', 3],[258.0, 100, '%', 4]

P
###Proximity magnetoresistance in graphene induced by magnetic insulators|D. A. Solis,A. Hallal,X. Waintal,M. Chshiev###
(1196009, 1196009)
 PMR calculations were performed for yttrium iron garnet(YIG), cobalt ferrite (CFO), and two europium chalcogenides EuO and EuS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 100, '%', 1],[173.0, 22, '%', 2],[178.0, 77, '%', 2],[218.0, 100, '%', 3]

YI
###Proximity magnetoresistance in graphene induced by magnetic insulators|D. A. Solis,A. Hallal,X. Waintal,M. Chshiev###
(1196029, 1196030)
 PMR calculations were performed for yttrium iron garnet(YIG), cobalt ferrite (CFO), and two europium chalcogenides EuO and EuS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 100, '%', 1],[152.0, 22, '%', 2],[157.0, 77, '%', 2],[197.0, 100, '%', 3]

(CFO)
###Proximity magnetoresistance in graphene induced by magnetic insulators|D. A. Solis,A. Hallal,X. Waintal,M. Chshiev###
(1196039, 1196043)
 PMR calculations were performed for yttrium iron garnet(YIG), cobalt ferrite (CFO), and two europium chalcogenides EuO and EuS.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 100, '%', 1],[139.0, 22, '%', 2],[144.0, 77, '%', 2],[184.0, 100, '%', 3]

EuO
###Proximity magnetoresistance in graphene induced by magnetic insulators|D. A. Solis,A. Hallal,X. Waintal,M. Chshiev###
(1196054, 1196055)
 PMR calculations were performed for yttrium iron garnet(YIG), cobalt ferrite (CFO), and two europium chalcogenides EuO and EuS.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 100, '%', 1],[127.0, 22, '%', 2],[132.0, 77, '%', 2],[172.0, 100, '%', 3]

EuS
###Proximity magnetoresistance in graphene induced by magnetic insulators|D. A. Solis,A. Hallal,X. Waintal,M. Chshiev###
(1196059, 1196060)
 PMR calculations were performed for yttrium iron garnet(YIG), cobalt ferrite (CFO), and two europium chalcogenides EuO and EuS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 100, '%', 1],[122.0, 22, '%', 2],[127.0, 77, '%', 2],[167.0, 100, '%', 3]

P
###Proximity magnetoresistance in graphene induced by magnetic insulators|D. A. Solis,A. Hallal,X. Waintal,M. Chshiev###
(1196072, 1196072)
 Wefind a significant PMR (up to 100%) values defined as a relative change ofgraphene conductance with respect to parallel and antiparallel alignment of twoproximity induced magnetic regions within graphene.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 100, '%', 0],[110.0, 22, '%', 1],[115.0, 77, '%', 1],[155.0, 100, '%', 2]

(Tc)
###Proximity magnetoresistance in graphene induced by magnetic insulators|D. A. Solis,A. Hallal,X. Waintal,M. Chshiev###
(1196148, 1196150)
 Namely, for high Curietemperature (Tc) CFO and YIG<missing VAR> insulators which are particularly important forapplications, we obtain 22% and 77% at room temperature, respectively.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 100, '%', 1],[32.0, 22, '%', 0],[37.0, 77, '%', 0],[77.0, 100, '%', 1]

CFO
###Proximity magnetoresistance in graphene induced by magnetic insulators|D. A. Solis,A. Hallal,X. Waintal,M. Chshiev###
(1196152, 1196154)
 Namely, for high Curietemperature (Tc) CFO and YIG<missing VAR> insulators which are particularly important forapplications, we obtain 22% and 77% at room temperature, respectively.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 100, '%', 1],[28.0, 22, '%', 0],[33.0, 77, '%', 0],[73.0, 100, '%', 1]

YI
###Proximity magnetoresistance in graphene induced by magnetic insulators|D. A. Solis,A. Hallal,X. Waintal,M. Chshiev###
(1196158, 1196159)
 Namely, for high Curietemperature (Tc) CFO and YIG<missing VAR> insulators which are particularly important forapplications, we obtain 22% and 77% at room temperature, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 100, '%', 1],[23.0, 22, '%', 0],[28.0, 77, '%', 0],[68.0, 100, '%', 1]

Tc
###Proximity magnetoresistance in graphene induced by magnetic insulators|D. A. Solis,A. Hallal,X. Waintal,M. Chshiev###
(1196205, 1196205)
 For lowTc chalcogenides, EuO and EuS, the PMR is 100% in both cases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 100, '%', 2],[23.0, 22, '%', 1],[18.0, 77, '%', 1],[22.0, 100, '%', 0]

EuO
###Proximity magnetoresistance in graphene induced by magnetic insulators|D. A. Solis,A. Hallal,X. Waintal,M. Chshiev###
(1196210, 1196211)
 For lowTc chalcogenides, EuO and EuS, the PMR is 100% in both cases.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 100, '%', 2],[28.0, 22, '%', 1],[23.0, 77, '%', 1],[16.0, 100, '%', 0]

EuS
###Proximity magnetoresistance in graphene induced by magnetic insulators|D. A. Solis,A. Hallal,X. Waintal,M. Chshiev###
(1196215, 1196216)
 For lowTc chalcogenides, EuO and EuS, the PMR is 100% in both cases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 100, '%', 2],[33.0, 22, '%', 1],[28.0, 77, '%', 1],[11.0, 100, '%', 0]

P
###Proximity magnetoresistance in graphene induced by magnetic insulators|D. A. Solis,A. Hallal,X. Waintal,M. Chshiev###
(1196221, 1196221)
 For lowTc chalcogenides, EuO and EuS, the PMR is 100% in both cases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 100, '%', 2],[39.0, 22, '%', 1],[34.0, 77, '%', 1],[6.0, 100, '%', 0]

P
###Proximity magnetoresistance in graphene induced by magnetic insulators|D. A. Solis,A. Hallal,X. Waintal,M. Chshiev###
(1196243, 1196243)
 Furthermore, thePMR is robust with respect to system dimensions and edge type termination.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 100, '%', 3],[61.0, 22, '%', 2],[56.0, 77, '%', 2],[16.0, 100, '%', 1]

TaAs2
###Robust magnetoresistance in TaAs2 under pressure up to about 37 GPa|Hongyuan Wang,Cuiying Pei,Hao Su,Zhenhai Yu,Mingtao Li,Wei Xia,Xiaolei Liu,Qifeng Liang,Jinggeng Zhao,Chunyin Zhou,Na Yu,Xia Wang,Zhiqiang Zou,Lin Wang,Yanpeng Qi,Yanfeng Guo###
(1196329, 1196331)
Robust magnetoresistance in TaAs2 under pressure up to about 37 GPa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 37, 'GPa', 0],[107.0, 37, 'GPa', 2],[144.0, 9.5, 'GPa', 2],[183.0, 1.7, 'GPa', 3],[187.0, 96.6, '%', 3],[204.0, 36.7, '%', 3]

S
###Robust magnetoresistance in TaAs2 under pressure up to about 37 GPa|Hongyuan Wang,Cuiying Pei,Hao Su,Zhenhai Yu,Mingtao Li,Wei Xia,Xiaolei Liu,Qifeng Liang,Jinggeng Zhao,Chunyin Zhou,Na Yu,Xia Wang,Zhiqiang Zou,Lin Wang,Yanpeng Qi,Yanfeng Guo###
(1196409, 1196409)
 We report results of synchrotron X<missing VAR>-ray diffraction (SXRD) andelectrical transport measurements on TaAs2 under pressure up to  37 GPa, whichrevealed an anisotropic compression of the unit cell, formation of unusualAs-As bonds above 9.5 GPa, and enhancement of metallicity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 37, 'GPa', 2],[29.0, 37, 'GPa', 0],[66.0, 9.5, 'GPa', 0],[105.0, 1.7, 'GPa', 1],[109.0, 96.6, '%', 1],[126.0, 36.7, '%', 1]

TaAs2
###Robust magnetoresistance in TaAs2 under pressure up to about 37 GPa|Hongyuan Wang,Cuiying Pei,Hao Su,Zhenhai Yu,Mingtao Li,Wei Xia,Xiaolei Liu,Qifeng Liang,Jinggeng Zhao,Chunyin Zhou,Na Yu,Xia Wang,Zhiqiang Zou,Lin Wang,Yanpeng Qi,Yanfeng Guo###
(1196426, 1196428)
 We report results of synchrotron X<missing VAR>-ray diffraction (SXRD) andelectrical transport measurements on TaAs2 under pressure up to  37 GPa, whichrevealed an anisotropic compression of the unit cell, formation of unusualAs-As bonds above 9.5 GPa, and enhancement of metallicity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 37, 'GPa', 2],[10.0, 37, 'GPa', 0],[47.0, 9.5, 'GPa', 0],[86.0, 1.7, 'GPa', 1],[90.0, 96.6, '%', 1],[107.0, 36.7, '%', 1]

As
###Robust magnetoresistance in TaAs2 under pressure up to about 37 GPa|Hongyuan Wang,Cuiying Pei,Hao Su,Zhenhai Yu,Mingtao Li,Wei Xia,Xiaolei Liu,Qifeng Liang,Jinggeng Zhao,Chunyin Zhou,Na Yu,Xia Wang,Zhiqiang Zou,Lin Wang,Yanpeng Qi,Yanfeng Guo###
(1196468, 1196468)
 We report results of synchrotron X<missing VAR>-ray diffraction (SXRD) andelectrical transport measurements on TaAs2 under pressure up to  37 GPa, whichrevealed an anisotropic compression of the unit cell, formation of unusualAs-As bonds above 9.5 GPa, and enhancement of metallicity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 37, 'GPa', 2],[30.0, 37, 'GPa', 0],[7.0, 9.5, 'GPa', 0],[46.0, 1.7, 'GPa', 1],[50.0, 96.6, '%', 1],[67.0, 36.7, '%', 1]

As
###Robust magnetoresistance in TaAs2 under pressure up to about 37 GPa|Hongyuan Wang,Cuiying Pei,Hao Su,Zhenhai Yu,Mingtao Li,Wei Xia,Xiaolei Liu,Qifeng Liang,Jinggeng Zhao,Chunyin Zhou,Na Yu,Xia Wang,Zhiqiang Zou,Lin Wang,Yanpeng Qi,Yanfeng Guo###
(1196470, 1196470)
 We report results of synchrotron X<missing VAR>-ray diffraction (SXRD) andelectrical transport measurements on TaAs2 under pressure up to  37 GPa, whichrevealed an anisotropic compression of the unit cell, formation of unusualAs-As bonds above 9.5 GPa, and enhancement of metallicity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 37, 'GPa', 2],[32.0, 37, 'GPa', 0],[5.0, 9.5, 'GPa', 0],[44.0, 1.7, 'GPa', 1],[48.0, 96.6, '%', 1],[65.0, 36.7, '%', 1]

TaAs2
###Robust magnetoresistance in TaAs2 under pressure up to about 37 GPa|Hongyuan Wang,Cuiying Pei,Hao Su,Zhenhai Yu,Mingtao Li,Wei Xia,Xiaolei Liu,Qifeng Liang,Jinggeng Zhao,Chunyin Zhou,Na Yu,Xia Wang,Zhiqiang Zou,Lin Wang,Yanpeng Qi,Yanfeng Guo###
(1196498, 1196500)
 Interestingly, theMR of TaAs2 under pressure changed gently, which at 1.7 GPa is 96.6% and at36.6 G<missing VAR>Pa is still 36.7%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 37, 'GPa', 3],[60.0, 37, 'GPa', 1],[23.0, 9.5, 'GPa', 1],[14.0, 1.7, 'GPa', 0],[18.0, 96.6, '%', 0],[35.0, 36.7, '%', 0]

Pa
###Robust magnetoresistance in TaAs2 under pressure up to about 37 GPa|Hongyuan Wang,Cuiying Pei,Hao Su,Zhenhai Yu,Mingtao Li,Wei Xia,Xiaolei Liu,Qifeng Liang,Jinggeng Zhao,Chunyin Zhou,Na Yu,Xia Wang,Zhiqiang Zou,Lin Wang,Yanpeng Qi,Yanfeng Guo###
(1196529, 1196529)
 Interestingly, theMR of TaAs2 under pressure changed gently, which at 1.7 GPa is 96.6% and at36.6 G<missing VAR>Pa is still 36.7%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0
[187.0, 37, 'GPa', 3],[91.0, 37, 'GPa', 1],[54.0, 9.5, 'GPa', 1],[15.0, 1.7, 'GPa', 0],[11.0, 96.6, '%', 0],[6.0, 36.7, '%', 0]

Ce0.24La0.76Ge
###Interplay between disorder driven Non-Fermi-liquid behavior and magnetism in Ce0.24La0.76Ge compound|Karan Singh,K. Mukherjee###
(1197023, 1197027)
Interplay between disorder driven Non-Fermi-liquid behavior and magnetism in Ce0.24La0.76Ge compound.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.38,0.12,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 4.7, 'and', 2],[72.0, 2.7, 'K', 2],[91.0, 1.8, 'K', 2],[138.0, 0.75, ',', 3],[199.0, 4, 'f', 4],[260.0, 2, 'Tesla', 5]

In
###Interplay between disorder driven Non-Fermi-liquid behavior and magnetism in Ce0.24La0.76Ge compound|Karan Singh,K. Mukherjee###
(1197032, 1197032)
 In this work, we investigate the magnetic, heat capacity and electricaltransport properties of Ce0.6La0.4Ge and Ce0.24La0.76Ge compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 4.7, 'and', 1],[67.0, 2.7, 'K', 1],[86.0, 1.8, 'K', 1],[133.0, 0.75, ',', 2],[194.0, 4, 'f', 3],[255.0, 2, 'Tesla', 4]

Ce0.6La0.4Ge
###Interplay between disorder driven Non-Fermi-liquid behavior and magnetism in Ce0.24La0.76Ge compound|Karan Singh,K. Mukherjee###
(1197063, 1197067)
 In this work, we investigate the magnetic, heat capacity and electricaltransport properties of Ce0.6La0.4Ge and Ce0.24La0.76Ge compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 4.7, 'and', 1],[32.0, 2.7, 'K', 1],[51.0, 1.8, 'K', 1],[98.0, 0.75, ',', 2],[159.0, 4, 'f', 3],[220.0, 2, 'Tesla', 4]

Ce0.24La0.76Ge
###Interplay between disorder driven Non-Fermi-liquid behavior and magnetism in Ce0.24La0.76Ge compound|Karan Singh,K. Mukherjee###
(1197071, 1197075)
 In this work, we investigate the magnetic, heat capacity and electricaltransport properties of Ce0.6La0.4Ge and Ce0.24La0.76Ge compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.38,0.12,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 4.7, 'and', 1],[24.0, 2.7, 'K', 1],[43.0, 1.8, 'K', 1],[90.0, 0.75, ',', 2],[151.0, 4, 'f', 3],[212.0, 2, 'Tesla', 4]

Ce0.6La0.4Ge
###Interplay between disorder driven Non-Fermi-liquid behavior and magnetism in Ce0.24La0.76Ge compound|Karan Singh,K. Mukherjee###
(1197107, 1197111)
 Our resultsshow that two antiferromagnetic transitions ( at 4.7 and 2.7 K) exhibited byCe0.6La0.4Ge are suppressed below 1.8 K for Ce0.24La0.76Ge.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 4.7, 'and', 0],[8.0, 2.7, 'K', 0],[7.0, 1.8, 'K', 0],[54.0, 0.75, ',', 1],[115.0, 4, 'f', 2],[176.0, 2, 'Tesla', 3]

Ce0.24La0.76Ge
###Interplay between disorder driven Non-Fermi-liquid behavior and magnetism in Ce0.24La0.76Ge compound|Karan Singh,K. Mukherjee###
(1197122, 1197126)
 Our resultsshow that two antiferromagnetic transitions ( at 4.7 and 2.7 K) exhibited byCe0.6La0.4Ge are suppressed below 1.8 K for Ce0.24La0.76Ge.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.38,0.12,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 4.7, 'and', 0],[23.0, 2.7, 'K', 0],[4.0, 1.8, 'K', 0],[39.0, 0.75, ',', 1],[100.0, 4, 'f', 2],[161.0, 2, 'Tesla', 3]

Ce0.24La0.76Ge
###Interplay between disorder driven Non-Fermi-liquid behavior and magnetism in Ce0.24La0.76Ge compound|Karan Singh,K. Mukherjee###
(1197135, 1197139)
 Interestingly, forCe0.24La0.76Ge, susceptibility, heat capacity and electrical resistivity varywith temperature as T<missing VAR>0.75, T<missing VAR>0.5 and T<missing VAR>1.6 respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.38,0.12,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 4.7, 'and', 1],[36.0, 2.7, 'K', 1],[17.0, 1.8, 'K', 1],[26.0, 0.75, ',', 0],[87.0, 4, 'f', 1],[148.0, 2, 'Tesla', 2]

NF
###Interplay between disorder driven Non-Fermi-liquid behavior and magnetism in Ce0.24La0.76Ge compound|Karan Singh,K. Mukherjee###
(1197207, 1197208)
 The observation of suchanomalous temperature variation suggests to the Non-Fermi-liquid (NFL) behaviordue to the presence of disordered 4f spins due to Ce-site dilution.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 4.7, 'and', 2],[108.0, 2.7, 'K', 2],[89.0, 1.8, 'K', 2],[42.0, 0.75, ',', 1],[18.0, 4, 'f', 0],[79.0, 2, 'Tesla', 1]

Ce
###Interplay between disorder driven Non-Fermi-liquid behavior and magnetism in Ce0.24La0.76Ge compound|Karan Singh,K. Mukherjee###
(1197234, 1197234)
 The observation of suchanomalous temperature variation suggests to the Non-Fermi-liquid (NFL) behaviordue to the presence of disordered 4f spins due to Ce-site dilution.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 4.7, 'and', 2],[135.0, 2.7, 'K', 2],[116.0, 1.8, 'K', 2],[69.0, 0.75, ',', 1],[8.0, 4, 'f', 0],[53.0, 2, 'Tesla', 1]

NF
###Interplay between disorder driven Non-Fermi-liquid behavior and magnetism in Ce0.24La0.76Ge compound|Karan Singh,K. Mukherjee###
(1197271, 1197272)
 Under theapplication of magnetic field, it is noted that a crossover from the NFL<missing VAR> to amagnetic state occurs around 2 Tesla, where, short-range correlations among thespins is prevalent due to the dominance of coupling between the magneticmoments via conduction electrons.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 4.7, 'and', 3],[172.0, 2.7, 'K', 3],[153.0, 1.8, 'K', 3],[106.0, 0.75, ',', 2],[45.0, 4, 'f', 1],[15.0, 2, 'Tesla', 0]

NF
###Interplay between disorder driven Non-Fermi-liquid behavior and magnetism in Ce0.24La0.76Ge compound|Karan Singh,K. Mukherjee###
(1197355, 1197356)
 Magnetoresistance scaling indicates thatbehavior of disorder driven NFL<missing VAR> state is described by the dynamical mean fieldtheory of the spin glass quantum critical point.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[257.0, 4.7, 'and', 4],[256.0, 2.7, 'K', 4],[237.0, 1.8, 'K', 4],[190.0, 0.75, ',', 3],[129.0, 4, 'f', 2],[68.0, 2, 'Tesla', 1]

FePt
###Large Spin Anomalous Hall Effect in L1$\rm_{0}$-FePt: Symmetry and Magnetization Switching|Takeshi Seki,Satoshi Iihama,Tomohiro Taniguchi,Koki Takanashi###
(1197418, 1197419)
Large Spin Anomalous Hall Effect in L<missing VAR>1rm0-FePt Symmetry and Magnetization Switching.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Large Spin Anomalous Hall Effect in L1$\rm_{0}$-FePt: Symmetry and Magnetization Switching|Takeshi Seki,Satoshi Iihama,Tomohiro Taniguchi,Koki Takanashi###
(1197447, 1197447)
 We quantitatively evaluate a spin anomalous Hall effect (SAHE), generatingspin angular momentum flow (spin current, J<missing VAR>rm s), in an L<missing VAR>1rm0-FePtferromagnet by exploiting giant magnetoresistance devices with L<missing VAR>1rm0-FePt/ Cu / Nirm81Ferm19 .
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Large Spin Anomalous Hall Effect in L1$\rm_{0}$-FePt: Symmetry and Magnetization Switching|Takeshi Seki,Satoshi Iihama,Tomohiro Taniguchi,Koki Takanashi###
(1197449, 1197449)
 We quantitatively evaluate a spin anomalous Hall effect (SAHE), generatingspin angular momentum flow (spin current, J<missing VAR>rm s), in an L<missing VAR>1rm0-FePtferromagnet by exploiting giant magnetoresistance devices with L<missing VAR>1rm0-FePt/ Cu / Nirm81Ferm19 .
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FePt
###Large Spin Anomalous Hall Effect in L1$\rm_{0}$-FePt: Symmetry and Magnetization Switching|Takeshi Seki,Satoshi Iihama,Tomohiro Taniguchi,Koki Takanashi###
(1197487, 1197488)
 We quantitatively evaluate a spin anomalous Hall effect (SAHE), generatingspin angular momentum flow (spin current, J<missing VAR>rm s), in an L<missing VAR>1rm0-FePtferromagnet by exploiting giant magnetoresistance devices with L<missing VAR>1rm0-FePt/ Cu / Nirm81Ferm19 .
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FePt
###Large Spin Anomalous Hall Effect in L1$\rm_{0}$-FePt: Symmetry and Magnetization Switching|Takeshi Seki,Satoshi Iihama,Tomohiro Taniguchi,Koki Takanashi###
(1197510, 1197511)
 We quantitatively evaluate a spin anomalous Hall effect (SAHE), generatingspin angular momentum flow (spin current, J<missing VAR>rm s), in an L<missing VAR>1rm0-FePtferromagnet by exploiting giant magnetoresistance devices with L<missing VAR>1rm0-FePt/ Cu / Nirm81Ferm19 .
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Large Spin Anomalous Hall Effect in L1$\rm_{0}$-FePt: Symmetry and Magnetization Switching|Takeshi Seki,Satoshi Iihama,Tomohiro Taniguchi,Koki Takanashi###
(1197516, 1197516)
 We quantitatively evaluate a spin anomalous Hall effect (SAHE), generatingspin angular momentum flow (spin current, J<missing VAR>rm s), in an L<missing VAR>1rm0-FePtferromagnet by exploiting giant magnetoresistance devices with L<missing VAR>1rm0-FePt/ Cu / Nirm81Ferm19 .
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Large Spin Anomalous Hall Effect in L1$\rm_{0}$-FePt: Symmetry and Magnetization Switching|Takeshi Seki,Satoshi Iihama,Tomohiro Taniguchi,Koki Takanashi###
(1197520, 1197520)
 We quantitatively evaluate a spin anomalous Hall effect (SAHE), generatingspin angular momentum flow (spin current, J<missing VAR>rm s), in an L<missing VAR>1rm0-FePtferromagnet by exploiting giant magnetoresistance devices with L<missing VAR>1rm0-FePt/ Cu / Nirm81Ferm19 .
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Large Spin Anomalous Hall Effect in L1$\rm_{0}$-FePt: Symmetry and Magnetization Switching|Takeshi Seki,Satoshi Iihama,Tomohiro Taniguchi,Koki Takanashi###
(1197523, 1197523)
 We quantitatively evaluate a spin anomalous Hall effect (SAHE), generatingspin angular momentum flow (spin current, J<missing VAR>rm s), in an L<missing VAR>1rm0-FePtferromagnet by exploiting giant magnetoresistance devices with L<missing VAR>1rm0-FePt/ Cu / Nirm81Ferm19 .
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Large Spin Anomalous Hall Effect in L1$\rm_{0}$-FePt: Symmetry and Magnetization Switching|Takeshi Seki,Satoshi Iihama,Tomohiro Taniguchi,Koki Takanashi###
(1197576, 1197576)
 From the ferromagnetic resonance linewidthmodulated by the charge current (J<missing VAR>rm c) injection, the spin anomalousHall angle ( alpharm SAH ) is obtained to be 0.25  pm  0.03.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Large Spin Anomalous Hall Effect in L1$\rm_{0}$-FePt: Symmetry and Magnetization Switching|Takeshi Seki,Satoshi Iihama,Tomohiro Taniguchi,Koki Takanashi###
(1197578, 1197578)
 From the ferromagnetic resonance linewidthmodulated by the charge current (J<missing VAR>rm c) injection, the spin anomalousHall angle ( alpharm SAH ) is obtained to be 0.25  pm  0.03.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Large Spin Anomalous Hall Effect in L1$\rm_{0}$-FePt: Symmetry and Magnetization Switching|Takeshi Seki,Satoshi Iihama,Tomohiro Taniguchi,Koki Takanashi###
(1197610, 1197610)
 Theevaluation of  alpharm SAH  at different configurations between J<missing VAR>rmc<missing VAR> and magnetization enables us to discuss the symmetry of SAHE<missing VAR> and gives theunambiguous evidence that SAHE<missing VAR> is the source of J<missing VAR>rm s<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Large Spin Anomalous Hall Effect in L1$\rm_{0}$-FePt: Symmetry and Magnetization Switching|Takeshi Seki,Satoshi Iihama,Tomohiro Taniguchi,Koki Takanashi###
(1197612, 1197612)
 Theevaluation of  alpharm SAH  at different configurations between J<missing VAR>rmc<missing VAR> and magnetization enables us to discuss the symmetry of SAHE<missing VAR> and gives theunambiguous evidence that SAHE<missing VAR> is the source of J<missing VAR>rm s<missing VAR>.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Large Spin Anomalous Hall Effect in L1$\rm_{0}$-FePt: Symmetry and Magnetization Switching|Takeshi Seki,Satoshi Iihama,Tomohiro Taniguchi,Koki Takanashi###
(1197647, 1197647)
 Theevaluation of  alpharm SAH  at different configurations between J<missing VAR>rmc<missing VAR> and magnetization enables us to discuss the symmetry of SAHE<missing VAR> and gives theunambiguous evidence that SAHE<missing VAR> is the source of J<missing VAR>rm s<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Large Spin Anomalous Hall Effect in L1$\rm_{0}$-FePt: Symmetry and Magnetization Switching|Takeshi Seki,Satoshi Iihama,Tomohiro Taniguchi,Koki Takanashi###
(1197649, 1197649)
 Theevaluation of  alpharm SAH  at different configurations between J<missing VAR>rmc<missing VAR> and magnetization enables us to discuss the symmetry of SAHE<missing VAR> and gives theunambiguous evidence that SAHE<missing VAR> is the source of J<missing VAR>rm s<missing VAR>.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Large Spin Anomalous Hall Effect in L1$\rm_{0}$-FePt: Symmetry and Magnetization Switching|Takeshi Seki,Satoshi Iihama,Tomohiro Taniguchi,Koki Takanashi###
(1197665, 1197665)
 Theevaluation of  alpharm SAH  at different configurations between J<missing VAR>rmc<missing VAR> and magnetization enables us to discuss the symmetry of SAHE<missing VAR> and gives theunambiguous evidence that SAHE<missing VAR> is the source of J<missing VAR>rm s<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Large Spin Anomalous Hall Effect in L1$\rm_{0}$-FePt: Symmetry and Magnetization Switching|Takeshi Seki,Satoshi Iihama,Tomohiro Taniguchi,Koki Takanashi###
(1197667, 1197667)
 Theevaluation of  alpharm SAH  at different configurations between J<missing VAR>rmc<missing VAR> and magnetization enables us to discuss the symmetry of SAHE<missing VAR> and gives theunambiguous evidence that SAHE<missing VAR> is the source of J<missing VAR>rm s<missing VAR>.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Large Spin Anomalous Hall Effect in L1$\rm_{0}$-FePt: Symmetry and Magnetization Switching|Takeshi Seki,Satoshi Iihama,Tomohiro Taniguchi,Koki Takanashi###
(1197697, 1197697)
 Thanks to thelarge  alpharm SAH , we demonstrate the SAHE<missing VAR>-induced magnetizationswitching.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Large Spin Anomalous Hall Effect in L1$\rm_{0}$-FePt: Symmetry and Magnetization Switching|Takeshi Seki,Satoshi Iihama,Tomohiro Taniguchi,Koki Takanashi###
(1197699, 1197699)
 Thanks to thelarge  alpharm SAH , we demonstrate the SAHE<missing VAR>-induced magnetizationswitching.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Large Spin Anomalous Hall Effect in L1$\rm_{0}$-FePt: Symmetry and Magnetization Switching|Takeshi Seki,Satoshi Iihama,Tomohiro Taniguchi,Koki Takanashi###
(1197709, 1197709)
 Thanks to thelarge  alpharm SAH , we demonstrate the SAHE<missing VAR>-induced magnetizationswitching.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Large Spin Anomalous Hall Effect in L1$\rm_{0}$-FePt: Symmetry and Magnetization Switching|Takeshi Seki,Satoshi Iihama,Tomohiro Taniguchi,Koki Takanashi###
(1197711, 1197711)
 Thanks to thelarge  alpharm SAH , we demonstrate the SAHE<missing VAR>-induced magnetizationswitching.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.7Sr0.3MnO3
###Combination of informational storage and logical processing based on an all-oxide asymmetric multiferroic tunnel junction|Q. Liu,J. Miao,Z. D. Xu,P. F. Liu,Q. H. Zhang,L. Gu,K. K. Meng,X. G. Xu,J. K. Chen,Y. Wu,Y. Jiang###
(1197890, 1197896)
 Herewe show that in an all-oxide asymmetric MFTJ of La0.7Sr0.3MnO3 /PbZr0.2Ti0.8O3/La0.7Te0.3MnO3 (LSMO/PZT/LTMO) with p<missing VAR>-type and n<missing VAR>-type electrodes, theintrinsic rectification is observed and can be modified by the ferroelectricpolarization of PZT.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PbZr0.2Ti0.8O3
###Combination of informational storage and logical processing based on an all-oxide asymmetric multiferroic tunnel junction|Q. Liu,J. Miao,Z. D. Xu,P. F. Liu,Q. H. Zhang,L. Gu,K. K. Meng,X. G. Xu,J. K. Chen,Y. Wu,Y. Jiang###
(1197899, 1197905)
 Herewe show that in an all-oxide asymmetric MFTJ of La0.7Sr0.3MnO3 /PbZr0.2Ti0.8O3/La0.7Te0.3MnO3 (LSMO/PZT/LTMO) with p<missing VAR>-type and n<missing VAR>-type electrodes, theintrinsic rectification is observed and can be modified by the ferroelectricpolarization of PZT.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.04,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.7Te0.3MnO3
###Combination of informational storage and logical processing based on an all-oxide asymmetric multiferroic tunnel junction|Q. Liu,J. Miao,Z. D. Xu,P. F. Liu,Q. H. Zhang,L. Gu,K. K. Meng,X. G. Xu,J. K. Chen,Y. Wu,Y. Jiang###
(1197909, 1197915)
 Herewe show that in an all-oxide asymmetric MFTJ of La0.7Sr0.3MnO3 /PbZr0.2Ti0.8O3/La0.7Te0.3MnO3 (LSMO/PZT/LTMO) with p<missing VAR>-type and n<missing VAR>-type electrodes, theintrinsic rectification is observed and can be modified by the ferroelectricpolarization of PZT.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O/P
###Combination of informational storage and logical processing based on an all-oxide asymmetric multiferroic tunnel junction|Q. Liu,J. Miao,Z. D. Xu,P. F. Liu,Q. H. Zhang,L. Gu,K. K. Meng,X. G. Xu,J. K. Chen,Y. Wu,Y. Jiang###
(1197921, 1197923)
 Herewe show that in an all-oxide asymmetric MFTJ of La0.7Sr0.3MnO3 /PbZr0.2Ti0.8O3/La0.7Te0.3MnO3 (LSMO/PZT/LTMO) with p<missing VAR>-type and n<missing VAR>-type electrodes, theintrinsic rectification is observed and can be modified by the ferroelectricpolarization of PZT.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

O
###Combination of informational storage and logical processing based on an all-oxide asymmetric multiferroic tunnel junction|Q. Liu,J. Miao,Z. D. Xu,P. F. Liu,Q. H. Zhang,L. Gu,K. K. Meng,X. G. Xu,J. K. Chen,Y. Wu,Y. Jiang###
(1197930, 1197930)
 Herewe show that in an all-oxide asymmetric MFTJ of La0.7Sr0.3MnO3 /PbZr0.2Ti0.8O3/La0.7Te0.3MnO3 (LSMO/PZT/LTMO) with p<missing VAR>-type and n<missing VAR>-type electrodes, theintrinsic rectification is observed and can be modified by the ferroelectricpolarization of PZT.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Combination of informational storage and logical processing based on an all-oxide asymmetric multiferroic tunnel junction|Q. Liu,J. Miao,Z. D. Xu,P. F. Liu,Q. H. Zhang,L. Gu,K. K. Meng,X. G. Xu,J. K. Chen,Y. Wu,Y. Jiang###
(1197978, 1197978)
 Herewe show that in an all-oxide asymmetric MFTJ of La0.7Sr0.3MnO3 /PbZr0.2Ti0.8O3/La0.7Te0.3MnO3 (LSMO/PZT/LTMO) with p<missing VAR>-type and n<missing VAR>-type electrodes, theintrinsic rectification is observed and can be modified by the ferroelectricpolarization of PZT.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CrVTiAl
###Electrical and magnetic properties of thin films of the spin-filter material CrVTiAl|Gregory M. Stephen,Christopher Lane,Gianina Buda,David Graf,Stanislaw Kaprzyk,Bernardo Barbiellini,Arun Bansil,Don Heiman###
(1198529, 1198532)
Electrical and magnetic properties of thin films of the spin-filter material CrVTiAl.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0.25,0.25,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CrVTiAl
###Electrical and magnetic properties of thin films of the spin-filter material CrVTiAl|Gregory M. Stephen,Christopher Lane,Gianina Buda,David Graf,Stanislaw Kaprzyk,Bernardo Barbiellini,Arun Bansil,Don Heiman###
(1198543, 1198546)
 The spin-filter material CrVTiAl is a promising candidate for producinghighly spin-polarized currents at room temperature in a nonmagneticarchitecture.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0.25,0.25,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CrVTiAl
###Electrical and magnetic properties of thin films of the spin-filter material CrVTiAl|Gregory M. Stephen,Christopher Lane,Gianina Buda,David Graf,Stanislaw Kaprzyk,Bernardo Barbiellini,Arun Bansil,Don Heiman###
(1198595, 1198598)
 Thin films of compensated-ferrimagnetic CrVTiAl have been grownand their electrical and magnetic properties have been studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0.25,0.25,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Electrical and magnetic properties of thin films of the spin-filter material CrVTiAl|Gregory M. Stephen,Christopher Lane,Gianina Buda,David Graf,Stanislaw Kaprzyk,Bernardo Barbiellini,Arun Bansil,Don Heiman###
(1198673, 1198673)
 The resistivityshows two-channel semiconducting behavior with one disordered gapless channeland a gapped channel with activation energy Delta E<missing VAR>0.1-0.2e<missing VAR>V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B35
###Electrical and magnetic properties of thin films of the spin-filter material CrVTiAl|Gregory M. Stephen,Christopher Lane,Gianina Buda,David Graf,Stanislaw Kaprzyk,Bernardo Barbiellini,Arun Bansil,Don Heiman###
(1198683, 1198684)
Magnetoresistance measurements to B35T<missing VAR> provide values for the mobilities ofthe gapless channel, leading to an order of magnitude difference in the carriereffective masses, which are in reasonable accord with ourdensity-functional-theory based results.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr
###Electrical and magnetic properties of thin films of the spin-filter material CrVTiAl|Gregory M. Stephen,Christopher Lane,Gianina Buda,David Graf,Stanislaw Kaprzyk,Bernardo Barbiellini,Arun Bansil,Don Heiman###
(1198815, 1198815)
 The density of states and electronicband structure is computed for permutations of the four sublattices arrangeddifferently along the (111) body diagonal, yielding metallic (Cr-V-Al-Ti),spin-gapless (Cr-V-Ti-Al) and spin-filtering (Cr-Ti-V-Al) phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Electrical and magnetic properties of thin films of the spin-filter material CrVTiAl|Gregory M. Stephen,Christopher Lane,Gianina Buda,David Graf,Stanislaw Kaprzyk,Bernardo Barbiellini,Arun Bansil,Don Heiman###
(1198817, 1198817)
 The density of states and electronicband structure is computed for permutations of the four sublattices arrangeddifferently along the (111) body diagonal, yielding metallic (Cr-V-Al-Ti),spin-gapless (Cr-V-Ti-Al) and spin-filtering (Cr-Ti-V-Al) phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Al
###Electrical and magnetic properties of thin films of the spin-filter material CrVTiAl|Gregory M. Stephen,Christopher Lane,Gianina Buda,David Graf,Stanislaw Kaprzyk,Bernardo Barbiellini,Arun Bansil,Don Heiman###
(1198819, 1198819)
 The density of states and electronicband structure is computed for permutations of the four sublattices arrangeddifferently along the (111) body diagonal, yielding metallic (Cr-V-Al-Ti),spin-gapless (Cr-V-Ti-Al) and spin-filtering (Cr-Ti-V-Al) phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ti
###Electrical and magnetic properties of thin films of the spin-filter material CrVTiAl|Gregory M. Stephen,Christopher Lane,Gianina Buda,David Graf,Stanislaw Kaprzyk,Bernardo Barbiellini,Arun Bansil,Don Heiman###
(1198821, 1198821)
 The density of states and electronicband structure is computed for permutations of the four sublattices arrangeddifferently along the (111) body diagonal, yielding metallic (Cr-V-Al-Ti),spin-gapless (Cr-V-Ti-Al) and spin-filtering (Cr-Ti-V-Al) phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr
###Electrical and magnetic properties of thin films of the spin-filter material CrVTiAl|Gregory M. Stephen,Christopher Lane,Gianina Buda,David Graf,Stanislaw Kaprzyk,Bernardo Barbiellini,Arun Bansil,Don Heiman###
(1198831, 1198831)
 The density of states and electronicband structure is computed for permutations of the four sublattices arrangeddifferently along the (111) body diagonal, yielding metallic (Cr-V-Al-Ti),spin-gapless (Cr-V-Ti-Al) and spin-filtering (Cr-Ti-V-Al) phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Electrical and magnetic properties of thin films of the spin-filter material CrVTiAl|Gregory M. Stephen,Christopher Lane,Gianina Buda,David Graf,Stanislaw Kaprzyk,Bernardo Barbiellini,Arun Bansil,Don Heiman###
(1198833, 1198833)
 The density of states and electronicband structure is computed for permutations of the four sublattices arrangeddifferently along the (111) body diagonal, yielding metallic (Cr-V-Al-Ti),spin-gapless (Cr-V-Ti-Al) and spin-filtering (Cr-Ti-V-Al) phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ti
###Electrical and magnetic properties of thin films of the spin-filter material CrVTiAl|Gregory M. Stephen,Christopher Lane,Gianina Buda,David Graf,Stanislaw Kaprzyk,Bernardo Barbiellini,Arun Bansil,Don Heiman###
(1198835, 1198835)
 The density of states and electronicband structure is computed for permutations of the four sublattices arrangeddifferently along the (111) body diagonal, yielding metallic (Cr-V-Al-Ti),spin-gapless (Cr-V-Ti-Al) and spin-filtering (Cr-Ti-V-Al) phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Al
###Electrical and magnetic properties of thin films of the spin-filter material CrVTiAl|Gregory M. Stephen,Christopher Lane,Gianina Buda,David Graf,Stanislaw Kaprzyk,Bernardo Barbiellini,Arun Bansil,Don Heiman###
(1198837, 1198837)
 The density of states and electronicband structure is computed for permutations of the four sublattices arrangeddifferently along the (111) body diagonal, yielding metallic (Cr-V-Al-Ti),spin-gapless (Cr-V-Ti-Al) and spin-filtering (Cr-Ti-V-Al) phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr
###Electrical and magnetic properties of thin films of the spin-filter material CrVTiAl|Gregory M. Stephen,Christopher Lane,Gianina Buda,David Graf,Stanislaw Kaprzyk,Bernardo Barbiellini,Arun Bansil,Don Heiman###
(1198847, 1198847)
 The density of states and electronicband structure is computed for permutations of the four sublattices arrangeddifferently along the (111) body diagonal, yielding metallic (Cr-V-Al-Ti),spin-gapless (Cr-V-Ti-Al) and spin-filtering (Cr-Ti-V-Al) phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ti
###Electrical and magnetic properties of thin films of the spin-filter material CrVTiAl|Gregory M. Stephen,Christopher Lane,Gianina Buda,David Graf,Stanislaw Kaprzyk,Bernardo Barbiellini,Arun Bansil,Don Heiman###
(1198849, 1198849)
 The density of states and electronicband structure is computed for permutations of the four sublattices arrangeddifferently along the (111) body diagonal, yielding metallic (Cr-V-Al-Ti),spin-gapless (Cr-V-Ti-Al) and spin-filtering (Cr-Ti-V-Al) phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Electrical and magnetic properties of thin films of the spin-filter material CrVTiAl|Gregory M. Stephen,Christopher Lane,Gianina Buda,David Graf,Stanislaw Kaprzyk,Bernardo Barbiellini,Arun Bansil,Don Heiman###
(1198851, 1198851)
 The density of states and electronicband structure is computed for permutations of the four sublattices arrangeddifferently along the (111) body diagonal, yielding metallic (Cr-V-Al-Ti),spin-gapless (Cr-V-Ti-Al) and spin-filtering (Cr-Ti-V-Al) phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Al
###Electrical and magnetic properties of thin films of the spin-filter material CrVTiAl|Gregory M. Stephen,Christopher Lane,Gianina Buda,David Graf,Stanislaw Kaprzyk,Bernardo Barbiellini,Arun Bansil,Don Heiman###
(1198853, 1198853)
 The density of states and electronicband structure is computed for permutations of the four sublattices arrangeddifferently along the (111) body diagonal, yielding metallic (Cr-V-Al-Ti),spin-gapless (Cr-V-Ti-Al) and spin-filtering (Cr-Ti-V-Al) phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaVO3
###Planar Hall Effect and Anisotropic Magnetoresistance in a polar-polar interface of LaVO$_3$-KTaO$_3$ with strong spin-orbit coupling|Neha Wadehra,Ruchi Tomar,R. K Gopal,Yogesh Singh,Sushanta Dattagupta,S. Chakraverty###
(1198917, 1198920)
Planar Hall Effect and Anisotropic Magnetoresistance in a polar-polar interface of LaVO3-KTaO3 with strong spin-orbit coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

KTaO3
###Planar Hall Effect and Anisotropic Magnetoresistance in a polar-polar interface of LaVO$_3$-KTaO$_3$ with strong spin-orbit coupling|Neha Wadehra,Ruchi Tomar,R. K Gopal,Yogesh Singh,Sushanta Dattagupta,S. Chakraverty###
(1198922, 1198925)
Planar Hall Effect and Anisotropic Magnetoresistance in a polar-polar interface of LaVO3-KTaO3 with strong spin-orbit coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

KTaO3
###Planar Hall Effect and Anisotropic Magnetoresistance in a polar-polar interface of LaVO$_3$-KTaO$_3$ with strong spin-orbit coupling|Neha Wadehra,Ruchi Tomar,R. K Gopal,Yogesh Singh,Sushanta Dattagupta,S. Chakraverty###
(1198949, 1198952)
 Among the perovskite oxide family, KTaO3 (KT<missing VAR>O) has recently attractedconsiderable interest as a possible system for the realization of the Rashbaeffect.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Planar Hall Effect and Anisotropic Magnetoresistance in a polar-polar interface of LaVO$_3$-KTaO$_3$ with strong spin-orbit coupling|Neha Wadehra,Ruchi Tomar,R. K Gopal,Yogesh Singh,Sushanta Dattagupta,S. Chakraverty###
(1198955, 1198955)
 Among the perovskite oxide family, KTaO3 (KT<missing VAR>O) has recently attractedconsiderable interest as a possible system for the realization of the Rashbaeffect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Planar Hall Effect and Anisotropic Magnetoresistance in a polar-polar interface of LaVO$_3$-KTaO$_3$ with strong spin-orbit coupling|Neha Wadehra,Ruchi Tomar,R. K Gopal,Yogesh Singh,Sushanta Dattagupta,S. Chakraverty###
(1198957, 1198957)
 Among the perovskite oxide family, KTaO3 (KT<missing VAR>O) has recently attractedconsiderable interest as a possible system for the realization of the Rashbaeffect.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Planar Hall Effect and Anisotropic Magnetoresistance in a polar-polar interface of LaVO$_3$-KTaO$_3$ with strong spin-orbit coupling|Neha Wadehra,Ruchi Tomar,R. K Gopal,Yogesh Singh,Sushanta Dattagupta,S. Chakraverty###
(1198995, 1198995)
 In this work, we improvise a novel conducting interface by juxtaposingKT<missing VAR>O with another insulator, namely LaVO3 (L<missing VAR>VO) and report planar Hall effect(PHE) and anisotropic magnetoresistance (AMR) measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Planar Hall Effect and Anisotropic Magnetoresistance in a polar-polar interface of LaVO$_3$-KTaO$_3$ with strong spin-orbit coupling|Neha Wadehra,Ruchi Tomar,R. K Gopal,Yogesh Singh,Sushanta Dattagupta,S. Chakraverty###
(1199019, 1199019)
 In this work, we improvise a novel conducting interface by juxtaposingKT<missing VAR>O with another insulator, namely LaVO3 (L<missing VAR>VO) and report planar Hall effect(PHE) and anisotropic magnetoresistance (AMR) measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Planar Hall Effect and Anisotropic Magnetoresistance in a polar-polar interface of LaVO$_3$-KTaO$_3$ with strong spin-orbit coupling|Neha Wadehra,Ruchi Tomar,R. K Gopal,Yogesh Singh,Sushanta Dattagupta,S. Chakraverty###
(1199021, 1199021)
 In this work, we improvise a novel conducting interface by juxtaposingKT<missing VAR>O with another insulator, namely LaVO3 (L<missing VAR>VO) and report planar Hall effect(PHE) and anisotropic magnetoresistance (AMR) measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaVO3
###Planar Hall Effect and Anisotropic Magnetoresistance in a polar-polar interface of LaVO$_3$-KTaO$_3$ with strong spin-orbit coupling|Neha Wadehra,Ruchi Tomar,R. K Gopal,Yogesh Singh,Sushanta Dattagupta,S. Chakraverty###
(1199032, 1199035)
 In this work, we improvise a novel conducting interface by juxtaposingKT<missing VAR>O with another insulator, namely LaVO3 (L<missing VAR>VO) and report planar Hall effect(PHE) and anisotropic magnetoresistance (AMR) measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Planar Hall Effect and Anisotropic Magnetoresistance in a polar-polar interface of LaVO$_3$-KTaO$_3$ with strong spin-orbit coupling|Neha Wadehra,Ruchi Tomar,R. K Gopal,Yogesh Singh,Sushanta Dattagupta,S. Chakraverty###
(1199040, 1199040)
 In this work, we improvise a novel conducting interface by juxtaposingKT<missing VAR>O with another insulator, namely LaVO3 (L<missing VAR>VO) and report planar Hall effect(PHE) and anisotropic magnetoresistance (AMR) measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PH
###Planar Hall Effect and Anisotropic Magnetoresistance in a polar-polar interface of LaVO$_3$-KTaO$_3$ with strong spin-orbit coupling|Neha Wadehra,Ruchi Tomar,R. K Gopal,Yogesh Singh,Sushanta Dattagupta,S. Chakraverty###
(1199055, 1199056)
 In this work, we improvise a novel conducting interface by juxtaposingKT<missing VAR>O with another insulator, namely LaVO3 (L<missing VAR>VO) and report planar Hall effect(PHE) and anisotropic magnetoresistance (AMR) measurements.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Planar Hall Effect and Anisotropic Magnetoresistance in a polar-polar interface of LaVO$_3$-KTaO$_3$ with strong spin-orbit coupling|Neha Wadehra,Ruchi Tomar,R. K Gopal,Yogesh Singh,Sushanta Dattagupta,S. Chakraverty###
(1199152, 1199152)
 Athigh fields (sim8 T), we see a two fold to four fold transition in the AMRthat could not be explained using only Rashba spin-split energy spectra.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Theory of bi-linear magnetoresistance within the minimal model for surface states in topological insulators|A. Dyrdał,J. Barnaś,A. Fert###
(1199344, 1199344)
 A new mechanism of bi-linear magnetoresistance (BMR) is studied theoreticallywithin the minimal model describing surface electronic states in topologicalinsulators (T<missing VAR>Is).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Theory of bi-linear magnetoresistance within the minimal model for surface states in topological insulators|A. Dyrdał,J. Barnaś,A. Fert###
(1199387, 1199387)
 The BMR appears as a consequence of the second-order responseto electric field, and depends linearly on both electric field (current) andmagnetic field.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Theory of bi-linear magnetoresistance within the minimal model for surface states in topological insulators|A. Dyrdał,J. Barnaś,A. Fert###
(1199610, 1199610)
 We provide a consistenttheoretical approach based on the Green function formalism and show that themagnetic field dependent relaxation processes in the presence ofnon-equilibrium current-induced spin polarization give rise to the BMR.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.67Sr0.33MnO3
###Nonvolatile Multilevel States in Multiferroic Tunnel Junctions|Mei Fang,Sangjian Zhang,Wenchao Zhang,Lu Jiang,Eric Vetter,Ho Nyung Lee,Xiaoshan Xu,Dali Sun,Jian Shen###
(1199766, 1199772)
 Here we show that a La0.67Sr0.33MnO3(LSMO)/PbZr0.2Ti0.8O3(PZT)/Co structured MFTJ device can exhibit multilevelresistance states in the presence of gradually reversed ferroelectric domainsvia tunneling electro-resistance and tunneling magnetoresistance, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.066,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.134,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Nonvolatile Multilevel States in Multiferroic Tunnel Junctions|Mei Fang,Sangjian Zhang,Wenchao Zhang,Lu Jiang,Eric Vetter,Ho Nyung Lee,Xiaoshan Xu,Dali Sun,Jian Shen###
(1199779, 1199779)
 Here we show that a La0.67Sr0.33MnO3(LSMO)/PbZr0.2Ti0.8O3(PZT)/Co structured MFTJ device can exhibit multilevelresistance states in the presence of gradually reversed ferroelectric domainsvia tunneling electro-resistance and tunneling magnetoresistance, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O3
###Nonvolatile Multilevel States in Multiferroic Tunnel Junctions|Mei Fang,Sangjian Zhang,Wenchao Zhang,Lu Jiang,Eric Vetter,Ho Nyung Lee,Xiaoshan Xu,Dali Sun,Jian Shen###
(1199787, 1199788)
 Here we show that a La0.67Sr0.33MnO3(LSMO)/PbZr0.2Ti0.8O3(PZT)/Co structured MFTJ device can exhibit multilevelresistance states in the presence of gradually reversed ferroelectric domainsvia tunneling electro-resistance and tunneling magnetoresistance, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Nonvolatile Multilevel States in Multiferroic Tunnel Junctions|Mei Fang,Sangjian Zhang,Wenchao Zhang,Lu Jiang,Eric Vetter,Ho Nyung Lee,Xiaoshan Xu,Dali Sun,Jian Shen###
(1199790, 1199790)
 Here we show that a La0.67Sr0.33MnO3(LSMO)/PbZr0.2Ti0.8O3(PZT)/Co structured MFTJ device can exhibit multilevelresistance states in the presence of gradually reversed ferroelectric domainsvia tunneling electro-resistance and tunneling magnetoresistance, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Nonvolatile Multilevel States in Multiferroic Tunnel Junctions|Mei Fang,Sangjian Zhang,Wenchao Zhang,Lu Jiang,Eric Vetter,Ho Nyung Lee,Xiaoshan Xu,Dali Sun,Jian Shen###
(1199795, 1199795)
 Here we show that a La0.67Sr0.33MnO3(LSMO)/PbZr0.2Ti0.8O3(PZT)/Co structured MFTJ device can exhibit multilevelresistance states in the presence of gradually reversed ferroelectric domainsvia tunneling electro-resistance and tunneling magnetoresistance, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Nonvolatile Multilevel States in Multiferroic Tunnel Junctions|Mei Fang,Sangjian Zhang,Wenchao Zhang,Lu Jiang,Eric Vetter,Ho Nyung Lee,Xiaoshan Xu,Dali Sun,Jian Shen###
(1199899, 1199899)
The nonvolatile ferroelectric control in the MFTJ can be attributed to separatecontributions arising from two independent ferroelectric channels in the PZTinterlayer with opposite polarization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Longitudinal and transverse magnetoresistance of SrTiO$_3$ with a single closed Fermi surface|Yudai Awashima,Yuki Fuseya###
(1199995, 1199998)
Longitudinal and transverse magnetoresistance of SrTiO3 with a single closed Fermi surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[213.0, 300, '%', 4],[217.0, 10, 'T', 4]

SrTiO3
###Longitudinal and transverse magnetoresistance of SrTiO$_3$ with a single closed Fermi surface|Yudai Awashima,Yuki Fuseya###
(1200024, 1200027)
 The magnetoresistance (MR) of SrTiO3 is theoretically investigated basedon the Boltzmann equation by considering its detailed band structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[184.0, 300, '%', 3],[188.0, 10, 'T', 3]

SrTiO3
###Longitudinal and transverse magnetoresistance of SrTiO$_3$ with a single closed Fermi surface|Yudai Awashima,Yuki Fuseya###
(1200233, 1200236)
The calculated MR (300% at 10 T) quantitatively agrees with the experimentalresults for SrTiO3 including the behavior of the linear MR.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 300, '%', 0],[18.0, 10, 'T', 0]

SrTiO3
###Longitudinal and transverse magnetoresistance of SrTiO$_3$ with a single closed Fermi surface|Yudai Awashima,Yuki Fuseya###
(1200273, 1200276)
 The negativeGaussian curvature of the Fermi surface of SrTiO3 and its resulting negativelongitudinal and transverse MR are also discussed.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 300, '%', 1],[58.0, 10, 'T', 1]

CePtIn4
###Magnetic field driven quantum criticality in antiferromagnetic CePtIn4|Debarchan Das,Daniel Gnida,Piotr Wiśniewski,Dariusz Kaczorowski###
(1200325, 1200328)
Magnetic field driven quantum criticality in antiferromagnetic CePtIn4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CePtIn4
###Magnetic field driven quantum criticality in antiferromagnetic CePtIn4|Debarchan Das,Daniel Gnida,Piotr Wiśniewski,Dariusz Kaczorowski###
(1200451, 1200454)
 We present a comprehensive experimental evidence of a magneticfield tuned tricritical point separating paramagnetic, antiferromagnetic andmetamagnetic phases in novel compound CePtIn4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CePtIn4
###Magnetic field driven quantum criticality in antiferromagnetic CePtIn4|Debarchan Das,Daniel Gnida,Piotr Wiśniewski,Dariusz Kaczorowski###
(1200649, 1200652)
 Our findingsdemonstrate that CePtIn4 provides innovative perspective for studies ofquantum criticality.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BS
###Pulsed laser deposition of highly c-axis oriented thin films of BSTS topological insulator|Atul Pandey,Sourabh Singh,Bishnupada Ghosh,Subhadip Manna,Rk Gopal,Chiranjib Mitra###
(1200702, 1200703)
Pulsed laser deposition of highly c<missing VAR>-axis oriented thin films of BST<missing VAR>S topological insulator.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Pulsed laser deposition of highly c-axis oriented thin films of BSTS topological insulator|Atul Pandey,Sourabh Singh,Bishnupada Ghosh,Subhadip Manna,Rk Gopal,Chiranjib Mitra###
(1200705, 1200705)
Pulsed laser deposition of highly c<missing VAR>-axis oriented thin films of BST<missing VAR>S topological insulator.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Pulsed laser deposition of highly c-axis oriented thin films of BSTS topological insulator|Atul Pandey,Sourabh Singh,Bishnupada Ghosh,Subhadip Manna,Rk Gopal,Chiranjib Mitra###
(1200736, 1200736)
 We report the growth of highly c<missing VAR>-axis oriented topological insulator (T<missing VAR>I)BiSbTe1.5Se1.5 (BST<missing VAR>S) thin films by pulsed laser deposition (PLD) technique.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BiSbTe1.5Se1.5
###Pulsed laser deposition of highly c-axis oriented thin films of BSTS topological insulator|Atul Pandey,Sourabh Singh,Bishnupada Ghosh,Subhadip Manna,Rk Gopal,Chiranjib Mitra###
(1200740, 1200745)
 We report the growth of highly c<missing VAR>-axis oriented topological insulator (T<missing VAR>I)BiSbTe1.5Se1.5 (BST<missing VAR>S) thin films by pulsed laser deposition (PLD) technique.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BS
###Pulsed laser deposition of highly c-axis oriented thin films of BSTS topological insulator|Atul Pandey,Sourabh Singh,Bishnupada Ghosh,Subhadip Manna,Rk Gopal,Chiranjib Mitra###
(1200748, 1200749)
 We report the growth of highly c<missing VAR>-axis oriented topological insulator (T<missing VAR>I)BiSbTe1.5Se1.5 (BST<missing VAR>S) thin films by pulsed laser deposition (PLD) technique.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Pulsed laser deposition of highly c-axis oriented thin films of BSTS topological insulator|Atul Pandey,Sourabh Singh,Bishnupada Ghosh,Subhadip Manna,Rk Gopal,Chiranjib Mitra###
(1200751, 1200751)
 We report the growth of highly c<missing VAR>-axis oriented topological insulator (T<missing VAR>I)BiSbTe1.5Se1.5 (BST<missing VAR>S) thin films by pulsed laser deposition (PLD) technique.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Pulsed laser deposition of highly c-axis oriented thin films of BSTS topological insulator|Atul Pandey,Sourabh Singh,Bishnupada Ghosh,Subhadip Manna,Rk Gopal,Chiranjib Mitra###
(1200767, 1200767)
 We report the growth of highly c<missing VAR>-axis oriented topological insulator (T<missing VAR>I)BiSbTe1.5Se1.5 (BST<missing VAR>S) thin films by pulsed laser deposition (PLD) technique.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Pulsed laser deposition of highly c-axis oriented thin films of BSTS topological insulator|Atul Pandey,Sourabh Singh,Bishnupada Ghosh,Subhadip Manna,Rk Gopal,Chiranjib Mitra###
(1200844, 1200844)
The various growth parameters such as substrate temperature, Argon pressure inthe deposition chamber and target to substrate distance are tuned to obtain theoptimized conditions essential for stoichiometric and bulk insulating T<missing VAR>I thinfilms.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Au
###Spin Hall magnetoresistance sensor using Au$_x$Pt$_{1-x}$ as the spin-orbit torque biasing layer|Yanjun Xu,Yumeng Yang,Hang Xie,Yihong Wu###
(1201051, 1201051)
Spin Hall magnetoresistance sensor using Aux<missing VAR>Pt1-x as the spin-orbit torque biasing layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 57, '%', 2],[109.0, 80, '%', 2],[189.0, 1.8, 'nm', 3],[192.0, 2.5, 'nm', 3],[284.0, 1, 'Hz', 4]

Pt1-x
###Spin Hall magnetoresistance sensor using Au$_x$Pt$_{1-x}$ as the spin-orbit torque biasing layer|Yanjun Xu,Yumeng Yang,Hang Xie,Yihong Wu###
(1201053, 1201056)
Spin Hall magnetoresistance sensor using Aux<missing VAR>Pt1-x as the spin-orbit torque biasing layer.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[95.0, 57, '%', 2],[104.0, 80, '%', 2],[184.0, 1.8, 'nm', 3],[187.0, 2.5, 'nm', 3],[279.0, 1, 'Hz', 4]

NiFe
###Spin Hall magnetoresistance sensor using Au$_x$Pt$_{1-x}$ as the spin-orbit torque biasing layer|Yanjun Xu,Yumeng Yang,Hang Xie,Yihong Wu###
(1201096, 1201097)
 We report on investigation of spin Hall magnetoresistance sensor based onNiFe/AuxPt1-x bilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 57, '%', 1],[63.0, 80, '%', 1],[143.0, 1.8, 'nm', 2],[146.0, 2.5, 'nm', 2],[238.0, 1, 'Hz', 3]

Pt1-x
###Spin Hall magnetoresistance sensor using Au$_x$Pt$_{1-x}$ as the spin-orbit torque biasing layer|Yanjun Xu,Yumeng Yang,Hang Xie,Yihong Wu###
(1201100, 1201103)
 We report on investigation of spin Hall magnetoresistance sensor based onNiFe/AuxPt1-x bilayers.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[48.0, 57, '%', 1],[57.0, 80, '%', 1],[137.0, 1.8, 'nm', 2],[140.0, 2.5, 'nm', 2],[232.0, 1, 'Hz', 3]

NiFe/Pt
###Spin Hall magnetoresistance sensor using Au$_x$Pt$_{1-x}$ as the spin-orbit torque biasing layer|Yanjun Xu,Yumeng Yang,Hang Xie,Yihong Wu###
(1201112, 1201115)
 Compared to NiFe/Pt, the NiFe/AuxPt1-x sensor exhibitsa much lower power consumption (reduced by about 57%), due to 80% enhancementof spin-orbit torque efficiency of AuxPt1-x at an optimum composition of x<missing VAR> 0.19 as compared to pure Pt.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[36.0, 57, '%', 0],[45.0, 80, '%', 0],[125.0, 1.8, 'nm', 1],[128.0, 2.5, 'nm', 1],[220.0, 1, 'Hz', 2]

NiFe
###Spin Hall magnetoresistance sensor using Au$_x$Pt$_{1-x}$ as the spin-orbit torque biasing layer|Yanjun Xu,Yumeng Yang,Hang Xie,Yihong Wu###
(1201120, 1201121)
 Compared to NiFe/Pt, the NiFe/AuxPt1-x sensor exhibitsa much lower power consumption (reduced by about 57%), due to 80% enhancementof spin-orbit torque efficiency of AuxPt1-x at an optimum composition of x<missing VAR> 0.19 as compared to pure Pt.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 57, '%', 0],[39.0, 80, '%', 0],[119.0, 1.8, 'nm', 1],[122.0, 2.5, 'nm', 1],[214.0, 1, 'Hz', 2]

Pt1-x
###Spin Hall magnetoresistance sensor using Au$_x$Pt$_{1-x}$ as the spin-orbit torque biasing layer|Yanjun Xu,Yumeng Yang,Hang Xie,Yihong Wu###
(1201124, 1201127)
 Compared to NiFe/Pt, the NiFe/AuxPt1-x sensor exhibitsa much lower power consumption (reduced by about 57%), due to 80% enhancementof spin-orbit torque efficiency of AuxPt1-x at an optimum composition of x<missing VAR> 0.19 as compared to pure Pt.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[24.0, 57, '%', 0],[33.0, 80, '%', 0],[113.0, 1.8, 'nm', 1],[116.0, 2.5, 'nm', 1],[208.0, 1, 'Hz', 2]

Pt1-x
###Spin Hall magnetoresistance sensor using Au$_x$Pt$_{1-x}$ as the spin-orbit torque biasing layer|Yanjun Xu,Yumeng Yang,Hang Xie,Yihong Wu###
(1201179, 1201182)
 Compared to NiFe/Pt, the NiFe/AuxPt1-x sensor exhibitsa much lower power consumption (reduced by about 57%), due to 80% enhancementof spin-orbit torque efficiency of AuxPt1-x at an optimum composition of x<missing VAR> 0.19 as compared to pure Pt.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[28.0, 57, '%', 0],[19.0, 80, '%', 0],[58.0, 1.8, 'nm', 1],[61.0, 2.5, 'nm', 1],[153.0, 1, 'Hz', 2]

Pt
###Spin Hall magnetoresistance sensor using Au$_x$Pt$_{1-x}$ as the spin-orbit torque biasing layer|Yanjun Xu,Yumeng Yang,Hang Xie,Yihong Wu###
(1201208, 1201208)
 Compared to NiFe/Pt, the NiFe/AuxPt1-x sensor exhibitsa much lower power consumption (reduced by about 57%), due to 80% enhancementof spin-orbit torque efficiency of AuxPt1-x at an optimum composition of x<missing VAR> 0.19 as compared to pure Pt.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 57, '%', 0],[48.0, 80, '%', 0],[32.0, 1.8, 'nm', 1],[35.0, 2.5, 'nm', 1],[127.0, 1, 'Hz', 2]

NiFe
###Spin Hall magnetoresistance sensor using Au$_x$Pt$_{1-x}$ as the spin-orbit torque biasing layer|Yanjun Xu,Yumeng Yang,Hang Xie,Yihong Wu###
(1201236, 1201237)
 The enhanced spin-orbit torque efficiency allowsto increase the thickness of NiFe from 1.8 nm to 2.5 nm without significantlyincreasing the power consumption.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 57, '%', 1],[76.0, 80, '%', 1],[3.0, 1.8, 'nm', 0],[6.0, 2.5, 'nm', 0],[98.0, 1, 'Hz', 1]

NiFe
###Spin Hall magnetoresistance sensor using Au$_x$Pt$_{1-x}$ as the spin-orbit torque biasing layer|Yanjun Xu,Yumeng Yang,Hang Xie,Yihong Wu###
(1201272, 1201273)
 We show that, by increasing the NiFethickness, we were able to improve the working field range (0.86 Oe), operationtemperature range (150 degree C) and detectivity (0.71 nT/sqrt(Hz) at 1 Hz) ofthe sensor, which is important for practical applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 57, '%', 2],[112.0, 80, '%', 2],[32.0, 1.8, 'nm', 1],[29.0, 2.5, 'nm', 1],[62.0, 1, 'Hz', 0]

C
###Spin Hall magnetoresistance sensor using Au$_x$Pt$_{1-x}$ as the spin-orbit torque biasing layer|Yanjun Xu,Yumeng Yang,Hang Xie,Yihong Wu###
(1201316, 1201316)
 We show that, by increasing the NiFethickness, we were able to improve the working field range (0.86 Oe), operationtemperature range (150 degree C) and detectivity (0.71 nT/sqrt(Hz) at 1 Hz) ofthe sensor, which is important for practical applications.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 57, '%', 2],[156.0, 80, '%', 2],[76.0, 1.8, 'nm', 1],[73.0, 2.5, 'nm', 1],[19.0, 1, 'Hz', 0]

In
###In-plane antiferromagnetic moments in axion topological insulator candidate EuIn$_2$As$_2$|Yang Zhang,Ke Deng,Xiao Zhang,Meng Wang,Yuan Wang,Cai Liu,Jia-Wei Mei,Shiv Kumar,Eike F. Schwier,Kenya Shimada,Chaoyu Chen,Bing Shen###
(1201367, 1201367)
In-plane antiferromagnetic moments in axion topological insulator candidate EuIn2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuIn2As2
###In-plane antiferromagnetic moments in axion topological insulator candidate EuIn$_2$As$_2$|Yang Zhang,Ke Deng,Xiao Zhang,Meng Wang,Yuan Wang,Cai Liu,Jia-Wei Mei,Shiv Kumar,Eike F. Schwier,Kenya Shimada,Chaoyu Chen,Bing Shen###
(1201385, 1201389)
In-plane antiferromagnetic moments in axion topological insulator candidate EuIn2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###In-plane antiferromagnetic moments in axion topological insulator candidate EuIn$_2$As$_2$|Yang Zhang,Ke Deng,Xiao Zhang,Meng Wang,Yuan Wang,Cai Liu,Jia-Wei Mei,Shiv Kumar,Eike F. Schwier,Kenya Shimada,Chaoyu Chen,Bing Shen###
(1201428, 1201428)
 In this paper, we reporta systematic study of the axion topological insulator candidate EuIn2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuIn2As2
###In-plane antiferromagnetic moments in axion topological insulator candidate EuIn$_2$As$_2$|Yang Zhang,Ke Deng,Xiao Zhang,Meng Wang,Yuan Wang,Cai Liu,Jia-Wei Mei,Shiv Kumar,Eike F. Schwier,Kenya Shimada,Chaoyu Chen,Bing Shen###
(1201458, 1201462)
 In this paper, we reporta systematic study of the axion topological insulator candidate EuIn2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuIn2As2
###In-plane antiferromagnetic moments in axion topological insulator candidate EuIn$_2$As$_2$|Yang Zhang,Ke Deng,Xiao Zhang,Meng Wang,Yuan Wang,Cai Liu,Jia-Wei Mei,Shiv Kumar,Eike F. Schwier,Kenya Shimada,Chaoyu Chen,Bing Shen###
(1201604, 1201608)
The magnetoresistivity for EuIn2As2 behaves non-monotonic as a functionof field strength.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuIn2As2
###In-plane antiferromagnetic moments in axion topological insulator candidate EuIn$_2$As$_2$|Yang Zhang,Ke Deng,Xiao Zhang,Meng Wang,Yuan Wang,Cai Liu,Jia-Wei Mei,Shiv Kumar,Eike F. Schwier,Kenya Shimada,Chaoyu Chen,Bing Shen###
(1201677, 1201681)
 These results indicate that themagnetic states of EuIn2As2 strongly affect the transport properties aswell as the topological nature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Pressure-induced superconductivity in topological type II Dirac semimetal NiTe2|Tao Li,Ke Wang,Chunqiang Xu,Qiang Hou,Hao Wu,Jun-Yi Ge,Shixun Cao,Jincang Zhang,Wei Ren,Xiaofeng Xu,Nai-Chang Yeh,Bin Chen,Zhenjie Feng###
(1201727, 1201728)
Pressure-induced superconductivity in topological type II Dirac semimetal NiTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[159.0, 3.4, 'GPa', 4],[162.0, 54.45, 'Gpa', 4],[175.0, 12, 'GPa', 5],[186.0, 3.7, 'K', 5],[200.0, 6.4, 'K', 5],[210.0, 52.8, 'GPa', 5]

NiTe2
###Pressure-induced superconductivity in topological type II Dirac semimetal NiTe2|Tao Li,Ke Wang,Chunqiang Xu,Qiang Hou,Hao Wu,Jun-Yi Ge,Shixun Cao,Jincang Zhang,Wei Ren,Xiaofeng Xu,Nai-Chang Yeh,Bin Chen,Zhenjie Feng###
(1201734, 1201736)
Pressure-induced superconductivity in topological type II Dirac semimetal NiTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 3.4, 'GPa', 4],[154.0, 54.45, 'Gpa', 4],[167.0, 12, 'GPa', 5],[178.0, 3.7, 'K', 5],[192.0, 6.4, 'K', 5],[202.0, 52.8, 'GPa', 5]

NiTe2
###Pressure-induced superconductivity in topological type II Dirac semimetal NiTe2|Tao Li,Ke Wang,Chunqiang Xu,Qiang Hou,Hao Wu,Jun-Yi Ge,Shixun Cao,Jincang Zhang,Wei Ren,Xiaofeng Xu,Nai-Chang Yeh,Bin Chen,Zhenjie Feng###
(1201744, 1201746)
 Very recently, NiTe2 has been reported to be a type II Dirac semimetal withDirac nodes near the Fermi surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 3.4, 'GPa', 3],[144.0, 54.45, 'Gpa', 3],[157.0, 12, 'GPa', 4],[168.0, 3.7, 'K', 4],[182.0, 6.4, 'K', 4],[192.0, 52.8, 'GPa', 4]

II
###Pressure-induced superconductivity in topological type II Dirac semimetal NiTe2|Tao Li,Ke Wang,Chunqiang Xu,Qiang Hou,Hao Wu,Jun-Yi Ge,Shixun Cao,Jincang Zhang,Wei Ren,Xiaofeng Xu,Nai-Chang Yeh,Bin Chen,Zhenjie Feng###
(1201762, 1201763)
 Very recently, NiTe2 has been reported to be a type II Dirac semimetal withDirac nodes near the Fermi surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 3.4, 'GPa', 3],[127.0, 54.45, 'Gpa', 3],[140.0, 12, 'GPa', 4],[151.0, 3.7, 'K', 4],[165.0, 6.4, 'K', 4],[175.0, 52.8, 'GPa', 4]

NiTe2
###Pressure-induced superconductivity in topological type II Dirac semimetal NiTe2|Tao Li,Ke Wang,Chunqiang Xu,Qiang Hou,Hao Wu,Jun-Yi Ge,Shixun Cao,Jincang Zhang,Wei Ren,Xiaofeng Xu,Nai-Chang Yeh,Bin Chen,Zhenjie Feng###
(1201796, 1201798)
 Furthermore, it is unveiled that NiTe2presents the Hall Effect, which is ascribed to orbital magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 3.4, 'GPa', 2],[92.0, 54.45, 'Gpa', 2],[105.0, 12, 'GPa', 3],[116.0, 3.7, 'K', 3],[130.0, 6.4, 'K', 3],[140.0, 52.8, 'GPa', 3]

NiTe2
###Pressure-induced superconductivity in topological type II Dirac semimetal NiTe2|Tao Li,Ke Wang,Chunqiang Xu,Qiang Hou,Hao Wu,Jun-Yi Ge,Shixun Cao,Jincang Zhang,Wei Ren,Xiaofeng Xu,Nai-Chang Yeh,Bin Chen,Zhenjie Feng###
(1201834, 1201836)
 Thephysical properties behavior of NiTe2 under high pressure attracts us.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 3.4, 'GPa', 1],[54.0, 54.45, 'Gpa', 1],[67.0, 12, 'GPa', 2],[78.0, 3.7, 'K', 2],[92.0, 6.4, 'K', 2],[102.0, 52.8, 'GPa', 2]

In
###Pressure-induced superconductivity in topological type II Dirac semimetal NiTe2|Tao Li,Ke Wang,Chunqiang Xu,Qiang Hou,Hao Wu,Jun-Yi Ge,Shixun Cao,Jincang Zhang,Wei Ren,Xiaofeng Xu,Nai-Chang Yeh,Bin Chen,Zhenjie Feng###
(1201849, 1201849)
 In thispaper, we investigate the electrical properties of polycrystalline NiTe2 byapplication of pressure ranging from 3.4GPa to 54.45Gpa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 3.4, 'GPa', 0],[41.0, 54.45, 'Gpa', 0],[54.0, 12, 'GPa', 1],[65.0, 3.7, 'K', 1],[79.0, 6.4, 'K', 1],[89.0, 52.8, 'GPa', 1]

NiTe2
###Pressure-induced superconductivity in topological type II Dirac semimetal NiTe2|Tao Li,Ke Wang,Chunqiang Xu,Qiang Hou,Hao Wu,Jun-Yi Ge,Shixun Cao,Jincang Zhang,Wei Ren,Xiaofeng Xu,Nai-Chang Yeh,Bin Chen,Zhenjie Feng###
(1201871, 1201873)
 In thispaper, we investigate the electrical properties of polycrystalline NiTe2 byapplication of pressure ranging from 3.4GPa to 54.45Gpa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 3.4, 'GPa', 0],[17.0, 54.45, 'Gpa', 0],[30.0, 12, 'GPa', 1],[41.0, 3.7, 'K', 1],[55.0, 6.4, 'K', 1],[65.0, 52.8, 'GPa', 1]

Tc
###Pressure-induced superconductivity in topological type II Dirac semimetal NiTe2|Tao Li,Ke Wang,Chunqiang Xu,Qiang Hou,Hao Wu,Jun-Yi Ge,Shixun Cao,Jincang Zhang,Wei Ren,Xiaofeng Xu,Nai-Chang Yeh,Bin Chen,Zhenjie Feng###
(1201920, 1201920)
 Superconductivityemerges at critical pressure 12GPa with a transition temperature of 3.7K, andTc reaches its maximum, 6.4 K, at the pressure of 52.8GPa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 3.4, 'GPa', 1],[30.0, 54.45, 'Gpa', 1],[17.0, 12, 'GPa', 0],[6.0, 3.7, 'K', 0],[8.0, 6.4, 'K', 0],[18.0, 52.8, 'GPa', 0]

MoP
###Pressure-induced superconductivity in topological type II Dirac semimetal NiTe2|Tao Li,Ke Wang,Chunqiang Xu,Qiang Hou,Hao Wu,Jun-Yi Ge,Shixun Cao,Jincang Zhang,Wei Ren,Xiaofeng Xu,Nai-Chang Yeh,Bin Chen,Zhenjie Feng###
(1201952, 1201953)
 Comparing with thesuperconductivity in MoP, we purposed the possibility of topologicalsuperconductivity in NiTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 3.4, 'GPa', 2],[62.0, 54.45, 'Gpa', 2],[49.0, 12, 'GPa', 1],[38.0, 3.7, 'K', 1],[24.0, 6.4, 'K', 1],[14.0, 52.8, 'GPa', 1]

NiTe2
###Pressure-induced superconductivity in topological type II Dirac semimetal NiTe2|Tao Li,Ke Wang,Chunqiang Xu,Qiang Hou,Hao Wu,Jun-Yi Ge,Shixun Cao,Jincang Zhang,Wei Ren,Xiaofeng Xu,Nai-Chang Yeh,Bin Chen,Zhenjie Feng###
(1201973, 1201975)
 Comparing with thesuperconductivity in MoP, we purposed the possibility of topologicalsuperconductivity in NiTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 3.4, 'GPa', 2],[83.0, 54.45, 'Gpa', 2],[70.0, 12, 'GPa', 1],[59.0, 3.7, 'K', 1],[45.0, 6.4, 'K', 1],[35.0, 52.8, 'GPa', 1]

S
###Observation of topological surface state in a superconducting material|Gyanendra Dhakal,M. Mofazzel Hosen,Ayana Ghosh,Christopher Lane,Karolina Gornicka,Michal J. Winiarski,Klauss Dimitri,Firoza Kabir,Christopher Sims,Sabin Regmi,William Neff,Luis Persaud,Yangyang Liu,Dariusz Kaczorowski,Jian-Xin Zhu,Tomasz Klimczuk,Madhab Neupane###
(1202152, 1202152)
 Here, we report a systematicangle-resolved photoemission spectroscopy (ARPES) study of a superconductingmaterial CaBi2 [Tc  2 K], corroborated by the first principles calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 2, 'K', 0]

CaBi2
###Observation of topological surface state in a superconducting material|Gyanendra Dhakal,M. Mofazzel Hosen,Ayana Ghosh,Christopher Lane,Karolina Gornicka,Michal J. Winiarski,Klauss Dimitri,Firoza Kabir,Christopher Sims,Sabin Regmi,William Neff,Luis Persaud,Yangyang Liu,Dariusz Kaczorowski,Jian-Xin Zhu,Tomasz Klimczuk,Madhab Neupane###
(1202166, 1202168)
 Here, we report a systematicangle-resolved photoemission spectroscopy (ARPES) study of a superconductingmaterial CaBi2 [Tc  2 K], corroborated by the first principles calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 2, 'K', 0]

Tc
###Observation of topological surface state in a superconducting material|Gyanendra Dhakal,M. Mofazzel Hosen,Ayana Ghosh,Christopher Lane,Karolina Gornicka,Michal J. Winiarski,Klauss Dimitri,Firoza Kabir,Christopher Sims,Sabin Regmi,William Neff,Luis Persaud,Yangyang Liu,Dariusz Kaczorowski,Jian-Xin Zhu,Tomasz Klimczuk,Madhab Neupane###
(1202171, 1202171)
 Here, we report a systematicangle-resolved photoemission spectroscopy (ARPES) study of a superconductingmaterial CaBi2 [Tc  2 K], corroborated by the first principles calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 2, 'K', 0]

CaBi2
###Observation of topological surface state in a superconducting material|Gyanendra Dhakal,M. Mofazzel Hosen,Ayana Ghosh,Christopher Lane,Karolina Gornicka,Michal J. Winiarski,Klauss Dimitri,Firoza Kabir,Christopher Sims,Sabin Regmi,William Neff,Luis Persaud,Yangyang Liu,Dariusz Kaczorowski,Jian-Xin Zhu,Tomasz Klimczuk,Madhab Neupane###
(1202297, 1202299)
 Our results indicate that CaBi2 could potentially provide a materialplatform to study the interplay between superconductivity and topology.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 2, 'K', 4]

B
###Mechanism of Universal Conductance Fluctuations|V. V. Brazhkin,I. M. Suslov###
(1202402, 1202402)
 Universal conductance fluctuations are usually observed in the form ofaperiodic oscillations in the magnetoresistance of thin wires as a function ofthe magnetic field B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 1, 'D', 2]

B
###Mechanism of Universal Conductance Fluctuations|V. V. Brazhkin,I. M. Suslov###
(1202425, 1202425)
 If such oscillations are completely random at scalesexceeding xiB, their Fourier analysis should reveal a white noise spectrum atfrequencies below xiB-1.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 1, 'D', 1]

B
###Mechanism of Universal Conductance Fluctuations|V. V. Brazhkin,I. M. Suslov###
(1202454, 1202454)
 If such oscillations are completely random at scalesexceeding xiB, their Fourier analysis should reveal a white noise spectrum atfrequencies below xiB-1.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 1, 'D', 1]

LaCuSb2
###Dirac Fermions and Possible Weak Antilocalization in LaCuSb$_{2}$|J. R. Chamorro,A. Topp,Y. Fang,M. J. Winiarski,C. R. Ast,M. Krivenkov,A. Varykhalov,B. J. Ramshaw,L. Schoop,T. M. McQueen###
(1202639, 1202642)
Dirac Fermions and Possible Weak Antilocalization in LaCuSb2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sb
###Dirac Fermions and Possible Weak Antilocalization in LaCuSb$_{2}$|J. R. Chamorro,A. Topp,Y. Fang,M. J. Winiarski,C. R. Ast,M. Krivenkov,A. Varykhalov,B. J. Ramshaw,L. Schoop,T. M. McQueen###
(1202708, 1202708)
 Wereport quantum transport and spectroscopic data on the layered Sbsquare-lattice material LaCuSb2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaCuSb2
###Dirac Fermions and Possible Weak Antilocalization in LaCuSb$_{2}$|J. R. Chamorro,A. Topp,Y. Fang,M. J. Winiarski,C. R. Ast,M. Krivenkov,A. Varykhalov,B. J. Ramshaw,L. Schoop,T. M. McQueen###
(1202717, 1202720)
 Wereport quantum transport and spectroscopic data on the layered Sbsquare-lattice material LaCuSb2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Dirac Fermions and Possible Weak Antilocalization in LaCuSb$_{2}$|J. R. Chamorro,A. Topp,Y. Fang,M. J. Winiarski,C. R. Ast,M. Krivenkov,A. Varykhalov,B. J. Ramshaw,L. Schoop,T. M. McQueen###
(1202779, 1202779)
 Linearly dispersing band crossings,necessary to generate Dirac fermions, are experimentally observed in theelectronic band structure observed using angle-resolved photoemissionspectroscopy (ARPES), along with a quasi-two-dimensional Fermi surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Dirac Fermions and Possible Weak Antilocalization in LaCuSb$_{2}$|J. R. Chamorro,A. Topp,Y. Fang,M. J. Winiarski,C. R. Ast,M. Krivenkov,A. Varykhalov,B. J. Ramshaw,L. Schoop,T. M. McQueen###
(1202881, 1202881)
 Measurements of theShubnikov-de Haas (SdH) quantum oscillations show low effective mass electronson the order of 0.065me, further confirming the presence of Dirac fermionsin this material.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Phase sensitive detection of extent of corrosion in steel reinforcing bars using eddy currents|Indrani Mukherjee,Jinit Patil,Sauvik Banerjee,Siddharth Tallur###
(1202990, 1202990)
 Corrosion of steel bars in reinforced cement concrete (R<missing VAR>CC) structures leadsto premature deterioration and increase in life cycle maintenance costs.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Phase sensitive detection of extent of corrosion in steel reinforcing bars using eddy currents|Indrani Mukherjee,Jinit Patil,Sauvik Banerjee,Siddharth Tallur###
(1203027, 1203027)
Non-destructive testing (NDT) of incipient corrosion has been an impending taskin this domain.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Phase sensitive detection of extent of corrosion in steel reinforcing bars using eddy currents|Indrani Mukherjee,Jinit Patil,Sauvik Banerjee,Siddharth Tallur###
(1203259, 1203259)
 The proof-of-concept sensor demonstration is able toresolve varying extents of rebar corrosion and can find potential applicationsas an NDT tool in a variety of industries.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Large and Robust Charge-to-Spin Conversion in Sputtered Conductive WTex with Disorder|Xiang Li,Peng Li,Vincent D. -H. Hou,Mahendra DC,Chih-Hung Nien,Fen Xue,Di Yi,Chong Bi,Chien-Min Lee,Shy-Jay Lin,Wilman Tsai,Yuri Suzuki,Shan X. Wang###
(1203304, 1203304)
Large and Robust Charge-to-Spin Conversion in Sputtered Conductive WTex with Disorder.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[225.0, 5, 'to', 4]

W
###Large and Robust Charge-to-Spin Conversion in Sputtered Conductive WTex with Disorder|Xiang Li,Peng Li,Vincent D. -H. Hou,Mahendra DC,Chih-Hung Nien,Fen Xue,Di Yi,Chong Bi,Chien-Min Lee,Shy-Jay Lin,Wilman Tsai,Yuri Suzuki,Shan X. Wang###
(1203379, 1203379)
 Here, we report that long-range disordered sputteredWTex thin films exhibit local chemical and structural order as those of Weylsemimetal WTe2 and conduction behavior that is consistent with semi-metallicWeyl fermion.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 5, 'to', 2]

WTe2
###Large and Robust Charge-to-Spin Conversion in Sputtered Conductive WTex with Disorder|Xiang Li,Peng Li,Vincent D. -H. Hou,Mahendra DC,Chih-Hung Nien,Fen Xue,Di Yi,Chong Bi,Chien-Min Lee,Shy-Jay Lin,Wilman Tsai,Yuri Suzuki,Shan X. Wang###
(1203409, 1203411)
 Here, we report that long-range disordered sputteredWTex thin films exhibit local chemical and structural order as those of Weylsemimetal WTe2 and conduction behavior that is consistent with semi-metallicWeyl fermion.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 5, 'to', 2]

W
###Large and Robust Charge-to-Spin Conversion in Sputtered Conductive WTex with Disorder|Xiang Li,Peng Li,Vincent D. -H. Hou,Mahendra DC,Chih-Hung Nien,Fen Xue,Di Yi,Chong Bi,Chien-Min Lee,Shy-Jay Lin,Wilman Tsai,Yuri Suzuki,Shan X. Wang###
(1203468, 1203468)
 We find large charge-to-spin conversion properties and electricalconductivity in thermally annealed sputtered WTex films that are comparablewith those in crystalline WTe2 flakes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 5, 'to', 1]

WTe2
###Large and Robust Charge-to-Spin Conversion in Sputtered Conductive WTex with Disorder|Xiang Li,Peng Li,Vincent D. -H. Hou,Mahendra DC,Chih-Hung Nien,Fen Xue,Di Yi,Chong Bi,Chien-Min Lee,Shy-Jay Lin,Wilman Tsai,Yuri Suzuki,Shan X. Wang###
(1203488, 1203490)
 We find large charge-to-spin conversion properties and electricalconductivity in thermally annealed sputtered WTex films that are comparablewith those in crystalline WTe2 flakes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 5, 'to', 1]

W
###Large and Robust Charge-to-Spin Conversion in Sputtered Conductive WTex with Disorder|Xiang Li,Peng Li,Vincent D. -H. Hou,Mahendra DC,Chih-Hung Nien,Fen Xue,Di Yi,Chong Bi,Chien-Min Lee,Shy-Jay Lin,Wilman Tsai,Yuri Suzuki,Shan X. Wang###
(1203517, 1203517)
 Besides, the strength of unidirectionalspin Hall magnetoresistance in annealed WTex/Mo/CoFeB heterostructure is 5 to20 times larger than typical SOT<missing VAR> layer/ferromagnet heterostructures reported atroom temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 5, 'to', 0]

Mo/CoFeB
###Large and Robust Charge-to-Spin Conversion in Sputtered Conductive WTex with Disorder|Xiang Li,Peng Li,Vincent D. -H. Hou,Mahendra DC,Chih-Hung Nien,Fen Xue,Di Yi,Chong Bi,Chien-Min Lee,Shy-Jay Lin,Wilman Tsai,Yuri Suzuki,Shan X. Wang###
(1203520, 1203524)
 Besides, the strength of unidirectionalspin Hall magnetoresistance in annealed WTex/Mo/CoFeB heterostructure is 5 to20 times larger than typical SOT<missing VAR> layer/ferromagnet heterostructures reported atroom temperature.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[5.0, 5, 'to', 0]

SO
###Large and Robust Charge-to-Spin Conversion in Sputtered Conductive WTex with Disorder|Xiang Li,Peng Li,Vincent D. -H. Hou,Mahendra DC,Chih-Hung Nien,Fen Xue,Di Yi,Chong Bi,Chien-Min Lee,Shy-Jay Lin,Wilman Tsai,Yuri Suzuki,Shan X. Wang###
(1203542, 1203543)
 Besides, the strength of unidirectionalspin Hall magnetoresistance in annealed WTex/Mo/CoFeB heterostructure is 5 to20 times larger than typical SOT<missing VAR> layer/ferromagnet heterostructures reported atroom temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 5, 'to', 0]

SO
###Large and Robust Charge-to-Spin Conversion in Sputtered Conductive WTex with Disorder|Xiang Li,Peng Li,Vincent D. -H. Hou,Mahendra DC,Chih-Hung Nien,Fen Xue,Di Yi,Chong Bi,Chien-Min Lee,Shy-Jay Lin,Wilman Tsai,Yuri Suzuki,Shan X. Wang###
(1203577, 1203578)
 We further demonstrate room temperature damping-likeSOT<missing VAR>-driven magnetization switching of in-plane magnetized CoFeB.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 5, 'to', 1]

CoFeB
###Large and Robust Charge-to-Spin Conversion in Sputtered Conductive WTex with Disorder|Xiang Li,Peng Li,Vincent D. -H. Hou,Mahendra DC,Chih-Hung Nien,Fen Xue,Di Yi,Chong Bi,Chien-Min Lee,Shy-Jay Lin,Wilman Tsai,Yuri Suzuki,Shan X. Wang###
(1203595, 1203597)
 We further demonstrate room temperature damping-likeSOT<missing VAR>-driven magnetization switching of in-plane magnetized CoFeB.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 5, 'to', 1]

In
###Creating and manipulating interfacial spin with giant magnetic response in 4$f$ antiferromagnets|Ruyi Zhang,Yujuan Pei,Yang Song,Jiachang Bi,Jingkai Yang,Junxi Duan,Yanwei Cao###
(1203768, 1203768)
 In this work, weestablish the metamagnetic phase diagram of 4f<missing VAR> antiferromagnetic TbScO3and reveal its giant magnetic response to sub-tesla magnetic field, which hasnot been reported thus far.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TbScO3
###Creating and manipulating interfacial spin with giant magnetic response in 4$f$ antiferromagnets|Ruyi Zhang,Yujuan Pei,Yang Song,Jiachang Bi,Jingkai Yang,Junxi Duan,Yanwei Cao###
(1203795, 1203798)
 In this work, weestablish the metamagnetic phase diagram of 4f<missing VAR> antiferromagnetic TbScO3and reveal its giant magnetic response to sub-tesla magnetic field, which hasnot been reported thus far.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3/LaTiO3/TbScO3
###Creating and manipulating interfacial spin with giant magnetic response in 4$f$ antiferromagnets|Ruyi Zhang,Yujuan Pei,Yang Song,Jiachang Bi,Jingkai Yang,Junxi Duan,Yanwei Cao###
(1203877, 1203890)
 Utilizing this giant magnetic response, wedemonstrate that the spin polarization of two-dimensional electron gas inSrTiO3/LaTiO3/TbScO3 heterostructure can be manipulated successfullyin aid of interfacial 3textitd<missing VAR>-4textitf<missing VAR> exchange interaction.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

SrTiO3/LaTiO3
###Creating and manipulating interfacial spin with giant magnetic response in 4$f$ antiferromagnets|Ruyi Zhang,Yujuan Pei,Yang Song,Jiachang Bi,Jingkai Yang,Junxi Duan,Yanwei Cao###
(1203949, 1203957)
 Remarkably,the hysteretic magnetoresistances of two-dimensional electron gas at theSrTiO3/LaTiO3 interface are entirely determined by the metamagnetic phasetransitions of the underlying TbScO3 substrate.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

TbScO3
###Creating and manipulating interfacial spin with giant magnetic response in 4$f$ antiferromagnets|Ruyi Zhang,Yujuan Pei,Yang Song,Jiachang Bi,Jingkai Yang,Junxi Duan,Yanwei Cao###
(1203984, 1203987)
 Remarkably,the hysteretic magnetoresistances of two-dimensional electron gas at theSrTiO3/LaTiO3 interface are entirely determined by the metamagnetic phasetransitions of the underlying TbScO3 substrate.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Coexistence of the Kondo effect and spin glass physics in Fe-doped NbS$_2$|H. Nobukane,Y. Tabata,T. Kurosawa,D. Sakabe,S. Tanda###
(1204066, 1204066)
Coexistence of the Kondo effect and spin glass physics in Fe-doped NbS2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbS2
###Coexistence of the Kondo effect and spin glass physics in Fe-doped NbS$_2$|H. Nobukane,Y. Tabata,T. Kurosawa,D. Sakabe,S. Tanda###
(1204070, 1204072)
Coexistence of the Kondo effect and spin glass physics in Fe-doped NbS2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Coexistence of the Kondo effect and spin glass physics in Fe-doped NbS$_2$|H. Nobukane,Y. Tabata,T. Kurosawa,D. Sakabe,S. Tanda###
(1204102, 1204102)
 We report the coexistence of the Kondo effect and spin glass behavior inFe-doped NbS2 single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbS2
###Coexistence of the Kondo effect and spin glass physics in Fe-doped NbS$_2$|H. Nobukane,Y. Tabata,T. Kurosawa,D. Sakabe,S. Tanda###
(1204106, 1204108)
 We report the coexistence of the Kondo effect and spin glass behavior inFe-doped NbS2 single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Coexistence of the Kondo effect and spin glass physics in Fe-doped NbS$_2$|H. Nobukane,Y. Tabata,T. Kurosawa,D. Sakabe,S. Tanda###
(1204117, 1204117)
 The Fex<missing VAR>NbS2 shows the resistanceminimum and negative magnetoresistance due to the Kondo effect, and exhibits nosuperconducting behavior at low temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbS2
###Coexistence of the Kondo effect and spin glass physics in Fe-doped NbS$_2$|H. Nobukane,Y. Tabata,T. Kurosawa,D. Sakabe,S. Tanda###
(1204119, 1204121)
 The Fex<missing VAR>NbS2 shows the resistanceminimum and negative magnetoresistance due to the Kondo effect, and exhibits nosuperconducting behavior at low temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Coexistence of the Kondo effect and spin glass physics in Fe-doped NbS$_2$|H. Nobukane,Y. Tabata,T. Kurosawa,D. Sakabe,S. Tanda###
(1204195, 1204195)
 The resistance curve follows anumerical renormalization-group theory using the Kondo temperature T<missing VAR>K12.3K for x<missing VAR>0.01 as evidence of Kondo effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Coexistence of the Kondo effect and spin glass physics in Fe-doped NbS$_2$|H. Nobukane,Y. Tabata,T. Kurosawa,D. Sakabe,S. Tanda###
(1204199, 1204199)
 The resistance curve follows anumerical renormalization-group theory using the Kondo temperature T<missing VAR>K12.3K for x<missing VAR>0.01 as evidence of Kondo effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Coexistence of the Kondo effect and spin glass physics in Fe-doped NbS$_2$|H. Nobukane,Y. Tabata,T. Kurosawa,D. Sakabe,S. Tanda###
(1204227, 1204227)
 Scanning tunnelingmicroscope/spectroscopy (STM/ST<missing VAR>S) revealed the presence of Fe atoms near sulfuratoms and asymmetric spectra.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Coexistence of the Kondo effect and spin glass physics in Fe-doped NbS$_2$|H. Nobukane,Y. Tabata,T. Kurosawa,D. Sakabe,S. Tanda###
(1204231, 1204231)
 Scanning tunnelingmicroscope/spectroscopy (STM/ST<missing VAR>S) revealed the presence of Fe atoms near sulfuratoms and asymmetric spectra.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Coexistence of the Kondo effect and spin glass physics in Fe-doped NbS$_2$|H. Nobukane,Y. Tabata,T. Kurosawa,D. Sakabe,S. Tanda###
(1204233, 1204233)
 Scanning tunnelingmicroscope/spectroscopy (STM/ST<missing VAR>S) revealed the presence of Fe atoms near sulfuratoms and asymmetric spectra.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Coexistence of the Kondo effect and spin glass physics in Fe-doped NbS$_2$|H. Nobukane,Y. Tabata,T. Kurosawa,D. Sakabe,S. Tanda###
(1204244, 1204244)
 Scanning tunnelingmicroscope/spectroscopy (STM/ST<missing VAR>S) revealed the presence of Fe atoms near sulfuratoms and asymmetric spectra.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Coexistence of the Kondo effect and spin glass physics in Fe-doped NbS$_2$|H. Nobukane,Y. Tabata,T. Kurosawa,D. Sakabe,S. Tanda###
(1204335, 1204335)
 The doped-Fe atoms in the intra- and inter-layersrevealed by the X<missing VAR>-ray result can realize the coexistence of the Kondo effectand spin glass.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn2Au
###Giant magnetoresistance in antiferromagnetic Mn$_2$Au-based tunnel junction|Xing-Tao Jia,Xiao-Lin Cai,Yu Jia###
(1204405, 1204407)
Giant magnetoresistance in antiferromagnetic Mn2Au-based tunnel junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[198.0, 1000, '%', 4]

F
###Giant magnetoresistance in antiferromagnetic Mn$_2$Au-based tunnel junction|Xing-Tao Jia,Xiao-Lin Cai,Yu Jia###
(1204437, 1204437)
 Recent studies on the electrical switching of tetragonal antiferromagnet(AFM) via Ne<missing VAR>el spin-orbit torque have paved the way for the economic use ofantiferromagnetic materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[168.0, 1000, '%', 3]

N
###Giant magnetoresistance in antiferromagnetic Mn$_2$Au-based tunnel junction|Xing-Tao Jia,Xiao-Lin Cai,Yu Jia###
(1204443, 1204443)
 Recent studies on the electrical switching of tetragonal antiferromagnet(AFM) via Ne<missing VAR>el spin-orbit torque have paved the way for the economic use ofantiferromagnetic materials.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 1000, '%', 3]

F
###Giant magnetoresistance in antiferromagnetic Mn$_2$Au-based tunnel junction|Xing-Tao Jia,Xiao-Lin Cai,Yu Jia###
(1204544, 1204544)
 The most difficult obstacle that presently limitsthe application of antiferromagnetic materials in spintronics, especially inmemory storage applications, could be the small and fragile magnetoresistance(MR) in the AFM<missing VAR>-based nanostructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 1000, '%', 2]

In
###Giant magnetoresistance in antiferromagnetic Mn$_2$Au-based tunnel junction|Xing-Tao Jia,Xiao-Lin Cai,Yu Jia###
(1204552, 1204552)
 In this study, we investigated the spintransports in Mn2Au-based tunnel junctions based onthe first-principlescattering theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 1000, '%', 1]

Mn2Au
###Giant magnetoresistance in antiferromagnetic Mn$_2$Au-based tunnel junction|Xing-Tao Jia,Xiao-Lin Cai,Yu Jia###
(1204572, 1204574)
 In this study, we investigated the spintransports in Mn2Au-based tunnel junctions based onthe first-principlescattering theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 1000, '%', 1]

Fe/MgO/Ag/Mn2Au/Ta
###Giant magnetoresistance in antiferromagnetic Mn$_2$Au-based tunnel junction|Xing-Tao Jia,Xiao-Lin Cai,Yu Jia###
(1204617, 1204628)
 Giant M<missing VAR>Rs more than 1000% are predicted in someFe/MgO/Ag/Mn2Au/Ta junctions that are about the same order as that in anMgO-based ferromagnetic tunnel junction with same barrier thickness.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[12.0, 1000, '%', 0]

MgO
###Giant magnetoresistance in antiferromagnetic Mn$_2$Au-based tunnel junction|Xing-Tao Jia,Xiao-Lin Cai,Yu Jia###
(1204653, 1204654)
 Giant M<missing VAR>Rs more than 1000% are predicted in someFe/MgO/Ag/Mn2Au/Ta junctions that are about the same order as that in anMgO-based ferromagnetic tunnel junction with same barrier thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 1000, '%', 0]

Mn2Au
###Giant magnetoresistance in antiferromagnetic Mn$_2$Au-based tunnel junction|Xing-Tao Jia,Xiao-Lin Cai,Yu Jia###
(1204739, 1204741)
 Theinterplay of the spin filtering effect, the quantum well resonant states, andthe interfacial resonant states could be responsible for the unusual giant androbust M<missing VAR>Rs observed in these Mn2Au-based junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 1000, '%', 1]

(B)
###Extraordinary magnetoresistance in encapsulated monolayer graphene devices|Bowen Zhou,Kenji Watanabe,Takashi Taniguchi,Erik A. Henriksen###
(1204855, 1204857)
 Extremely large EMRvalues, MR(R<missing VAR>(B) - R<missing VAR>0) / R<missing VAR>0sim 105, are achieved in part because R<missing VAR>0approaches or crosses zero as a function of the gate voltage, exceeding thatachieved in high mobility bulk semiconductor devices.
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 5, ',', 0],[150.0, 20.0, 'An', 1]

B
###Extraordinary magnetoresistance in encapsulated monolayer graphene devices|Bowen Zhou,Kenji Watanabe,Takashi Taniguchi,Erik A. Henriksen###
(1204946, 1204946)
 We highlight thesensitivity, dR/d<missing VAR>B, which in two-terminal measurements is the highest yetreported for EMR devices, and in particular exceeds prior results ingraphene-based devices by a factor of 20. An asymmetry in the zero-fieldtransport is traced to the presence of pn-junctions at the graphene-metalshunt interface.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 5, ',', 1],[61.0, 20.0, 'An', 0]

HgTe
###Anomalous phase shift of Shubnikov - de Haas oscillations in HgTe quantum well with inverted energy spectrum|Neverov V. N.,Klepikova A. S.,Bogolubskii A. S.,Gudina S. V.,Turutkin K. V.,Shelushinina N. G. 1,Yakunin M. V.,N. N. Mikhailov,S. A. Dvoretsky###
(1205080, 1205081)
Anomalous phase shift of Shubnikov - de Haas oscillations in HgTe quantum well with inverted energy spectrum.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 2, 'D', 2],[244.0, 8, ',', 3]

HgCdTe/HgTe/HgCdTe
###Anomalous phase shift of Shubnikov - de Haas oscillations in HgTe quantum well with inverted energy spectrum|Neverov V. N.,Klepikova A. S.,Bogolubskii A. S.,Gudina S. V.,Turutkin K. V.,Shelushinina N. G. 1,Yakunin M. V.,N. N. Mikhailov,S. A. Dvoretsky###
(1205135, 1205144)
 The results of the longitudinal and Hall magnetoresistivity measurements inthe Shubnikov - de Haas oscillation regime for the HgCdTe/HgTe/HgCdTeheterostructures with a wide (20.3 nm) HgTe quantum well are presented.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[99.0, 2, 'D', 1],[181.0, 8, ',', 2]

HgTe
###Anomalous phase shift of Shubnikov - de Haas oscillations in HgTe quantum well with inverted energy spectrum|Neverov V. N.,Klepikova A. S.,Bogolubskii A. S.,Gudina S. V.,Turutkin K. V.,Shelushinina N. G. 1,Yakunin M. V.,N. N. Mikhailov,S. A. Dvoretsky###
(1205161, 1205162)
 The results of the longitudinal and Hall magnetoresistivity measurements inthe Shubnikov - de Haas oscillation regime for the HgCdTe/HgTe/HgCdTeheterostructures with a wide (20.3 nm) HgTe quantum well are presented.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 2, 'D', 1],[163.0, 8, ',', 2]

H1
###Anomalous phase shift of Shubnikov - de Haas oscillations in HgTe quantum well with inverted energy spectrum|Neverov V. N.,Klepikova A. S.,Bogolubskii A. S.,Gudina S. V.,Turutkin K. V.,Shelushinina N. G. 1,Yakunin M. V.,N. N. Mikhailov,S. A. Dvoretsky###
(1205313, 1205314)
 It is shown that the observed features are associated with theinverted nature of the spectrum in the investigated quantum well with theelectron-type conduction along the size-quantized subband H1 of HgTe bandGamma8, for which the spin splitting is comparable to (and even greaterthan) the orbital one.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 2, 'D', 1],[11.0, 8, ',', 0]

HgTe
###Anomalous phase shift of Shubnikov - de Haas oscillations in HgTe quantum well with inverted energy spectrum|Neverov V. N.,Klepikova A. S.,Bogolubskii A. S.,Gudina S. V.,Turutkin K. V.,Shelushinina N. G. 1,Yakunin M. V.,N. N. Mikhailov,S. A. Dvoretsky###
(1205318, 1205319)
 It is shown that the observed features are associated with theinverted nature of the spectrum in the investigated quantum well with theelectron-type conduction along the size-quantized subband H1 of HgTe bandGamma8, for which the spin splitting is comparable to (and even greaterthan) the orbital one.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 2, 'D', 1],[6.0, 8, ',', 0]

Pb1-xSn
###Signatures of dephasing by mirror-symmetry breaking in weak-antilocalization magnetoresistance across the topological transition in Pb$_{1-x}$Sn$_{x}$Se|Alexander Kazakov,Wojciech Brzezicki,Timo Hyart,Bartłomiej Turowski,Jakub Polaczyński,Zbigniew Adamus,Marta Aleszkiewicz,Tomasz Wojciechowski,Jaroslaw Z. Domagala,Ondrej Caha,Andrei Varykhalov,Gunther Springholz,Tomasz Wojtowicz,Valentine V. Volobuev,Tomasz Dietl###
(1205455, 1205459)
Signatures of dephasing by mirror-symmetry breaking in weak-antilocalization magnetoresistance across the topological transition in Pb1-xSnx<missing VAR>Se.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

Se
###Signatures of dephasing by mirror-symmetry breaking in weak-antilocalization magnetoresistance across the topological transition in Pb$_{1-x}$Sn$_{x}$Se|Alexander Kazakov,Wojciech Brzezicki,Timo Hyart,Bartłomiej Turowski,Jakub Polaczyński,Zbigniew Adamus,Marta Aleszkiewicz,Tomasz Wojciechowski,Jaroslaw Z. Domagala,Ondrej Caha,Andrei Varykhalov,Gunther Springholz,Tomasz Wojtowicz,Valentine V. Volobuev,Tomasz Dietl###
(1205461, 1205461)
Signatures of dephasing by mirror-symmetry breaking in weak-antilocalization magnetoresistance across the topological transition in Pb1-xSnx<missing VAR>Se.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SnTe
###Signatures of dephasing by mirror-symmetry breaking in weak-antilocalization magnetoresistance across the topological transition in Pb$_{1-x}$Sn$_{x}$Se|Alexander Kazakov,Wojciech Brzezicki,Timo Hyart,Bartłomiej Turowski,Jakub Polaczyński,Zbigniew Adamus,Marta Aleszkiewicz,Tomasz Wojciechowski,Jaroslaw Z. Domagala,Ondrej Caha,Andrei Varykhalov,Gunther Springholz,Tomasz Wojtowicz,Valentine V. Volobuev,Tomasz Dietl###
(1205551, 1205552)
 Here, by considering the SnTe-class ofcompounds as an example, we show theoretically that breaking of mirror symmetrydeteriorates Berrys<missing VAR> phase quantization, leading to additional dephasing inweak-antilocalization magnetoresistance (WAL-MR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Signatures of dephasing by mirror-symmetry breaking in weak-antilocalization magnetoresistance across the topological transition in Pb$_{1-x}$Sn$_{x}$Se|Alexander Kazakov,Wojciech Brzezicki,Timo Hyart,Bartłomiej Turowski,Jakub Polaczyński,Zbigniew Adamus,Marta Aleszkiewicz,Tomasz Wojciechowski,Jaroslaw Z. Domagala,Ondrej Caha,Andrei Varykhalov,Gunther Springholz,Tomasz Wojtowicz,Valentine V. Volobuev,Tomasz Dietl###
(1205613, 1205613)
 Here, by considering the SnTe-class ofcompounds as an example, we show theoretically that breaking of mirror symmetrydeteriorates Berrys<missing VAR> phase quantization, leading to additional dephasing inweak-antilocalization magnetoresistance (WAL-MR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Signatures of dephasing by mirror-symmetry breaking in weak-antilocalization magnetoresistance across the topological transition in Pb$_{1-x}$Sn$_{x}$Se|Alexander Kazakov,Wojciech Brzezicki,Timo Hyart,Bartłomiej Turowski,Jakub Polaczyński,Zbigniew Adamus,Marta Aleszkiewicz,Tomasz Wojciechowski,Jaroslaw Z. Domagala,Ondrej Caha,Andrei Varykhalov,Gunther Springholz,Tomasz Wojtowicz,Valentine V. Volobuev,Tomasz Dietl###
(1205631, 1205631)
 Our experimental studies ofWAL-MR corroborate these theoretical expectations in (111) Pb1-xSnx<missing VAR>Sethin film with Sn contents x<missing VAR> corresponding to both topological crystallineinsulator and topologically trivial phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pb1-xSn
###Signatures of dephasing by mirror-symmetry breaking in weak-antilocalization magnetoresistance across the topological transition in Pb$_{1-x}$Sn$_{x}$Se|Alexander Kazakov,Wojciech Brzezicki,Timo Hyart,Bartłomiej Turowski,Jakub Polaczyński,Zbigniew Adamus,Marta Aleszkiewicz,Tomasz Wojciechowski,Jaroslaw Z. Domagala,Ondrej Caha,Andrei Varykhalov,Gunther Springholz,Tomasz Wojtowicz,Valentine V. Volobuev,Tomasz Dietl###
(1205652, 1205656)
 Our experimental studies ofWAL-MR corroborate these theoretical expectations in (111) Pb1-xSnx<missing VAR>Sethin film with Sn contents x<missing VAR> corresponding to both topological crystallineinsulator and topologically trivial phases.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

Se
###Signatures of dephasing by mirror-symmetry breaking in weak-antilocalization magnetoresistance across the topological transition in Pb$_{1-x}$Sn$_{x}$Se|Alexander Kazakov,Wojciech Brzezicki,Timo Hyart,Bartłomiej Turowski,Jakub Polaczyński,Zbigniew Adamus,Marta Aleszkiewicz,Tomasz Wojciechowski,Jaroslaw Z. Domagala,Ondrej Caha,Andrei Varykhalov,Gunther Springholz,Tomasz Wojtowicz,Valentine V. Volobuev,Tomasz Dietl###
(1205658, 1205658)
 Our experimental studies ofWAL-MR corroborate these theoretical expectations in (111) Pb1-xSnx<missing VAR>Sethin film with Sn contents x<missing VAR> corresponding to both topological crystallineinsulator and topologically trivial phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sn
###Signatures of dephasing by mirror-symmetry breaking in weak-antilocalization magnetoresistance across the topological transition in Pb$_{1-x}$Sn$_{x}$Se|Alexander Kazakov,Wojciech Brzezicki,Timo Hyart,Bartłomiej Turowski,Jakub Polaczyński,Zbigniew Adamus,Marta Aleszkiewicz,Tomasz Wojciechowski,Jaroslaw Z. Domagala,Ondrej Caha,Andrei Varykhalov,Gunther Springholz,Tomasz Wojtowicz,Valentine V. Volobuev,Tomasz Dietl###
(1205667, 1205667)
 Our experimental studies ofWAL-MR corroborate these theoretical expectations in (111) Pb1-xSnx<missing VAR>Sethin film with Sn contents x<missing VAR> corresponding to both topological crystallineinsulator and topologically trivial phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Signatures of dephasing by mirror-symmetry breaking in weak-antilocalization magnetoresistance across the topological transition in Pb$_{1-x}$Sn$_{x}$Se|Alexander Kazakov,Wojciech Brzezicki,Timo Hyart,Bartłomiej Turowski,Jakub Polaczyński,Zbigniew Adamus,Marta Aleszkiewicz,Tomasz Wojciechowski,Jaroslaw Z. Domagala,Ondrej Caha,Andrei Varykhalov,Gunther Springholz,Tomasz Wojtowicz,Valentine V. Volobuev,Tomasz Dietl###
(1205695, 1205695)
 In particular, we find theshortening of the phase coherence length in samples with intentionally brokenmirror symmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Evidence for a magnetic-field induced ideal type-II Weyl state in antiferromagnetic topological insulator Mn(Bi1-xSbx)2Te4|Seng Huat Lee,David Graf,Yanglin Zhu,Hemian Yi,Samuel Ciocys,Eun Sang Choi,Rabindra Basnet,Arash Fereidouni,Aaron Wegner,Yi-Fan Zhao,Lujin Min,Katrina Verlinde,Jingyang He,Ronald Redwing,V. Gopalan,Hugh O. H. Churchill,Alessandra Lanzara,Nitin Samarth,Cui-Zu Chang,Jin Hu,Z. Q. Mao###
(1205823, 1205824)
Evidence for a magnetic-field induced ideal type-II Weyl state in antiferromagnetic topological insulator Mn(Bi1-xSbx)2Te4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Evidence for a magnetic-field induced ideal type-II Weyl state in antiferromagnetic topological insulator Mn(Bi1-xSbx)2Te4|Seng Huat Lee,David Graf,Yanglin Zhu,Hemian Yi,Samuel Ciocys,Eun Sang Choi,Rabindra Basnet,Arash Fereidouni,Aaron Wegner,Yi-Fan Zhao,Lujin Min,Katrina Verlinde,Jingyang He,Ronald Redwing,V. Gopalan,Hugh O. H. Churchill,Alessandra Lanzara,Nitin Samarth,Cui-Zu Chang,Jin Hu,Z. Q. Mao###
(1205838, 1205838)
Evidence for a magnetic-field induced ideal type-II Weyl state in antiferromagnetic topological insulator Mn(Bi1-xSbx)2Te4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi1-x
###Evidence for a magnetic-field induced ideal type-II Weyl state in antiferromagnetic topological insulator Mn(Bi1-xSbx)2Te4|Seng Huat Lee,David Graf,Yanglin Zhu,Hemian Yi,Samuel Ciocys,Eun Sang Choi,Rabindra Basnet,Arash Fereidouni,Aaron Wegner,Yi-Fan Zhao,Lujin Min,Katrina Verlinde,Jingyang He,Ronald Redwing,V. Gopalan,Hugh O. H. Churchill,Alessandra Lanzara,Nitin Samarth,Cui-Zu Chang,Jin Hu,Z. Q. Mao###
(1205840, 1205843)
Evidence for a magnetic-field induced ideal type-II Weyl state in antiferromagnetic topological insulator Mn(Bi1-xSbx)2Te4.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

Te4
###Evidence for a magnetic-field induced ideal type-II Weyl state in antiferromagnetic topological insulator Mn(Bi1-xSbx)2Te4|Seng Huat Lee,David Graf,Yanglin Zhu,Hemian Yi,Samuel Ciocys,Eun Sang Choi,Rabindra Basnet,Arash Fereidouni,Aaron Wegner,Yi-Fan Zhao,Lujin Min,Katrina Verlinde,Jingyang He,Ronald Redwing,V. Gopalan,Hugh O. H. Churchill,Alessandra Lanzara,Nitin Samarth,Cui-Zu Chang,Jin Hu,Z. Q. Mao###
(1205847, 1205848)
Evidence for a magnetic-field induced ideal type-II Weyl state in antiferromagnetic topological insulator Mn(Bi1-xSbx)2Te4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WS
###Evidence for a magnetic-field induced ideal type-II Weyl state in antiferromagnetic topological insulator Mn(Bi1-xSbx)2Te4|Seng Huat Lee,David Graf,Yanglin Zhu,Hemian Yi,Samuel Ciocys,Eun Sang Choi,Rabindra Basnet,Arash Fereidouni,Aaron Wegner,Yi-Fan Zhao,Lujin Min,Katrina Verlinde,Jingyang He,Ronald Redwing,V. Gopalan,Hugh O. H. Churchill,Alessandra Lanzara,Nitin Samarth,Cui-Zu Chang,Jin Hu,Z. Q. Mao###
(1205862, 1205863)
 The discovery of Weyl semimetals (WSMs) has fueled tremendous interest incondensed matter physics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WS
###Evidence for a magnetic-field induced ideal type-II Weyl state in antiferromagnetic topological insulator Mn(Bi1-xSbx)2Te4|Seng Huat Lee,David Graf,Yanglin Zhu,Hemian Yi,Samuel Ciocys,Eun Sang Choi,Rabindra Basnet,Arash Fereidouni,Aaron Wegner,Yi-Fan Zhao,Lujin Min,Katrina Verlinde,Jingyang He,Ronald Redwing,V. Gopalan,Hugh O. H. Churchill,Alessandra Lanzara,Nitin Samarth,Cui-Zu Chang,Jin Hu,Z. Q. Mao###
(1205885, 1205886)
 WSMs require breaking of either inversion symmetry(IS) or time-reversal symmetry (TRS); they can be categorized into type-I andtype-II WSMs, characterized by un-tilted and strongly tilted Weyl conesrespectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(IS)
###Evidence for a magnetic-field induced ideal type-II Weyl state in antiferromagnetic topological insulator Mn(Bi1-xSbx)2Te4|Seng Huat Lee,David Graf,Yanglin Zhu,Hemian Yi,Samuel Ciocys,Eun Sang Choi,Rabindra Basnet,Arash Fereidouni,Aaron Wegner,Yi-Fan Zhao,Lujin Min,Katrina Verlinde,Jingyang He,Ronald Redwing,V. Gopalan,Hugh O. H. Churchill,Alessandra Lanzara,Nitin Samarth,Cui-Zu Chang,Jin Hu,Z. Q. Mao###
(1205902, 1205905)
 WSMs require breaking of either inversion symmetry(IS) or time-reversal symmetry (TRS); they can be categorized into type-I andtype-II WSMs, characterized by un-tilted and strongly tilted Weyl conesrespectively.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Evidence for a magnetic-field induced ideal type-II Weyl state in antiferromagnetic topological insulator Mn(Bi1-xSbx)2Te4|Seng Huat Lee,David Graf,Yanglin Zhu,Hemian Yi,Samuel Ciocys,Eun Sang Choi,Rabindra Basnet,Arash Fereidouni,Aaron Wegner,Yi-Fan Zhao,Lujin Min,Katrina Verlinde,Jingyang He,Ronald Redwing,V. Gopalan,Hugh O. H. Churchill,Alessandra Lanzara,Nitin Samarth,Cui-Zu Chang,Jin Hu,Z. Q. Mao###
(1205918, 1205918)
 WSMs require breaking of either inversion symmetry(IS) or time-reversal symmetry (TRS); they can be categorized into type-I andtype-II WSMs, characterized by un-tilted and strongly tilted Weyl conesrespectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Evidence for a magnetic-field induced ideal type-II Weyl state in antiferromagnetic topological insulator Mn(Bi1-xSbx)2Te4|Seng Huat Lee,David Graf,Yanglin Zhu,Hemian Yi,Samuel Ciocys,Eun Sang Choi,Rabindra Basnet,Arash Fereidouni,Aaron Wegner,Yi-Fan Zhao,Lujin Min,Katrina Verlinde,Jingyang He,Ronald Redwing,V. Gopalan,Hugh O. H. Churchill,Alessandra Lanzara,Nitin Samarth,Cui-Zu Chang,Jin Hu,Z. Q. Mao###
(1205934, 1205934)
 WSMs require breaking of either inversion symmetry(IS) or time-reversal symmetry (TRS); they can be categorized into type-I andtype-II WSMs, characterized by un-tilted and strongly tilted Weyl conesrespectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Evidence for a magnetic-field induced ideal type-II Weyl state in antiferromagnetic topological insulator Mn(Bi1-xSbx)2Te4|Seng Huat Lee,David Graf,Yanglin Zhu,Hemian Yi,Samuel Ciocys,Eun Sang Choi,Rabindra Basnet,Arash Fereidouni,Aaron Wegner,Yi-Fan Zhao,Lujin Min,Katrina Verlinde,Jingyang He,Ronald Redwing,V. Gopalan,Hugh O. H. Churchill,Alessandra Lanzara,Nitin Samarth,Cui-Zu Chang,Jin Hu,Z. Q. Mao###
(1205941, 1205942)
 WSMs require breaking of either inversion symmetry(IS) or time-reversal symmetry (TRS); they can be categorized into type-I andtype-II WSMs, characterized by un-tilted and strongly tilted Weyl conesrespectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WS
###Evidence for a magnetic-field induced ideal type-II Weyl state in antiferromagnetic topological insulator Mn(Bi1-xSbx)2Te4|Seng Huat Lee,David Graf,Yanglin Zhu,Hemian Yi,Samuel Ciocys,Eun Sang Choi,Rabindra Basnet,Arash Fereidouni,Aaron Wegner,Yi-Fan Zhao,Lujin Min,Katrina Verlinde,Jingyang He,Ronald Redwing,V. Gopalan,Hugh O. H. Churchill,Alessandra Lanzara,Nitin Samarth,Cui-Zu Chang,Jin Hu,Z. Q. Mao###
(1205944, 1205945)
 WSMs require breaking of either inversion symmetry(IS) or time-reversal symmetry (TRS); they can be categorized into type-I andtype-II WSMs, characterized by un-tilted and strongly tilted Weyl conesrespectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Evidence for a magnetic-field induced ideal type-II Weyl state in antiferromagnetic topological insulator Mn(Bi1-xSbx)2Te4|Seng Huat Lee,David Graf,Yanglin Zhu,Hemian Yi,Samuel Ciocys,Eun Sang Choi,Rabindra Basnet,Arash Fereidouni,Aaron Wegner,Yi-Fan Zhao,Lujin Min,Katrina Verlinde,Jingyang He,Ronald Redwing,V. Gopalan,Hugh O. H. Churchill,Alessandra Lanzara,Nitin Samarth,Cui-Zu Chang,Jin Hu,Z. Q. Mao###
(1205973, 1205973)
 Type-I WSMs with breaking of IS or TRS and type-II WSMs with ISbreaking have been realized experimentally, but TRS-breaking type-II WSM<missing VAR> stillremains elusive.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WS
###Evidence for a magnetic-field induced ideal type-II Weyl state in antiferromagnetic topological insulator Mn(Bi1-xSbx)2Te4|Seng Huat Lee,David Graf,Yanglin Zhu,Hemian Yi,Samuel Ciocys,Eun Sang Choi,Rabindra Basnet,Arash Fereidouni,Aaron Wegner,Yi-Fan Zhao,Lujin Min,Katrina Verlinde,Jingyang He,Ronald Redwing,V. Gopalan,Hugh O. H. Churchill,Alessandra Lanzara,Nitin Samarth,Cui-Zu Chang,Jin Hu,Z. Q. Mao###
(1205975, 1205976)
 Type-I WSMs with breaking of IS or TRS and type-II WSMs with ISbreaking have been realized experimentally, but TRS-breaking type-II WSM<missing VAR> stillremains elusive.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

IS
###Evidence for a magnetic-field induced ideal type-II Weyl state in antiferromagnetic topological insulator Mn(Bi1-xSbx)2Te4|Seng Huat Lee,David Graf,Yanglin Zhu,Hemian Yi,Samuel Ciocys,Eun Sang Choi,Rabindra Basnet,Arash Fereidouni,Aaron Wegner,Yi-Fan Zhao,Lujin Min,Katrina Verlinde,Jingyang He,Ronald Redwing,V. Gopalan,Hugh O. H. Churchill,Alessandra Lanzara,Nitin Samarth,Cui-Zu Chang,Jin Hu,Z. Q. Mao###
(1205985, 1205986)
 Type-I WSMs with breaking of IS or TRS and type-II WSMs with ISbreaking have been realized experimentally, but TRS-breaking type-II WSM<missing VAR> stillremains elusive.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Evidence for a magnetic-field induced ideal type-II Weyl state in antiferromagnetic topological insulator Mn(Bi1-xSbx)2Te4|Seng Huat Lee,David Graf,Yanglin Zhu,Hemian Yi,Samuel Ciocys,Eun Sang Choi,Rabindra Basnet,Arash Fereidouni,Aaron Wegner,Yi-Fan Zhao,Lujin Min,Katrina Verlinde,Jingyang He,Ronald Redwing,V. Gopalan,Hugh O. H. Churchill,Alessandra Lanzara,Nitin Samarth,Cui-Zu Chang,Jin Hu,Z. Q. Mao###
(1205992, 1205992)
 Type-I WSMs with breaking of IS or TRS and type-II WSMs with ISbreaking have been realized experimentally, but TRS-breaking type-II WSM<missing VAR> stillremains elusive.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Evidence for a magnetic-field induced ideal type-II Weyl state in antiferromagnetic topological insulator Mn(Bi1-xSbx)2Te4|Seng Huat Lee,David Graf,Yanglin Zhu,Hemian Yi,Samuel Ciocys,Eun Sang Choi,Rabindra Basnet,Arash Fereidouni,Aaron Wegner,Yi-Fan Zhao,Lujin Min,Katrina Verlinde,Jingyang He,Ronald Redwing,V. Gopalan,Hugh O. H. Churchill,Alessandra Lanzara,Nitin Samarth,Cui-Zu Chang,Jin Hu,Z. Q. Mao###
(1205998, 1205999)
 Type-I WSMs with breaking of IS or TRS and type-II WSMs with ISbreaking have been realized experimentally, but TRS-breaking type-II WSM<missing VAR> stillremains elusive.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WS
###Evidence for a magnetic-field induced ideal type-II Weyl state in antiferromagnetic topological insulator Mn(Bi1-xSbx)2Te4|Seng Huat Lee,David Graf,Yanglin Zhu,Hemian Yi,Samuel Ciocys,Eun Sang Choi,Rabindra Basnet,Arash Fereidouni,Aaron Wegner,Yi-Fan Zhao,Lujin Min,Katrina Verlinde,Jingyang He,Ronald Redwing,V. Gopalan,Hugh O. H. Churchill,Alessandra Lanzara,Nitin Samarth,Cui-Zu Chang,Jin Hu,Z. Q. Mao###
(1206001, 1206002)
 Type-I WSMs with breaking of IS or TRS and type-II WSMs with ISbreaking have been realized experimentally, but TRS-breaking type-II WSM<missing VAR> stillremains elusive.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

IS
###Evidence for a magnetic-field induced ideal type-II Weyl state in antiferromagnetic topological insulator Mn(Bi1-xSbx)2Te4|Seng Huat Lee,David Graf,Yanglin Zhu,Hemian Yi,Samuel Ciocys,Eun Sang Choi,Rabindra Basnet,Arash Fereidouni,Aaron Wegner,Yi-Fan Zhao,Lujin Min,Katrina Verlinde,Jingyang He,Ronald Redwing,V. Gopalan,Hugh O. H. Churchill,Alessandra Lanzara,Nitin Samarth,Cui-Zu Chang,Jin Hu,Z. Q. Mao###
(1206007, 1206008)
 Type-I WSMs with breaking of IS or TRS and type-II WSMs with ISbreaking have been realized experimentally, but TRS-breaking type-II WSM<missing VAR> stillremains elusive.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Evidence for a magnetic-field induced ideal type-II Weyl state in antiferromagnetic topological insulator Mn(Bi1-xSbx)2Te4|Seng Huat Lee,David Graf,Yanglin Zhu,Hemian Yi,Samuel Ciocys,Eun Sang Choi,Rabindra Basnet,Arash Fereidouni,Aaron Wegner,Yi-Fan Zhao,Lujin Min,Katrina Verlinde,Jingyang He,Ronald Redwing,V. Gopalan,Hugh O. H. Churchill,Alessandra Lanzara,Nitin Samarth,Cui-Zu Chang,Jin Hu,Z. Q. Mao###
(1206026, 1206026)
 Type-I WSMs with breaking of IS or TRS and type-II WSMs with ISbreaking have been realized experimentally, but TRS-breaking type-II WSM<missing VAR> stillremains elusive.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Evidence for a magnetic-field induced ideal type-II Weyl state in antiferromagnetic topological insulator Mn(Bi1-xSbx)2Te4|Seng Huat Lee,David Graf,Yanglin Zhu,Hemian Yi,Samuel Ciocys,Eun Sang Choi,Rabindra Basnet,Arash Fereidouni,Aaron Wegner,Yi-Fan Zhao,Lujin Min,Katrina Verlinde,Jingyang He,Ronald Redwing,V. Gopalan,Hugh O. H. Churchill,Alessandra Lanzara,Nitin Samarth,Cui-Zu Chang,Jin Hu,Z. Q. Mao###
(1206032, 1206033)
 Type-I WSMs with breaking of IS or TRS and type-II WSMs with ISbreaking have been realized experimentally, but TRS-breaking type-II WSM<missing VAR> stillremains elusive.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WS
###Evidence for a magnetic-field induced ideal type-II Weyl state in antiferromagnetic topological insulator Mn(Bi1-xSbx)2Te4|Seng Huat Lee,David Graf,Yanglin Zhu,Hemian Yi,Samuel Ciocys,Eun Sang Choi,Rabindra Basnet,Arash Fereidouni,Aaron Wegner,Yi-Fan Zhao,Lujin Min,Katrina Verlinde,Jingyang He,Ronald Redwing,V. Gopalan,Hugh O. H. Churchill,Alessandra Lanzara,Nitin Samarth,Cui-Zu Chang,Jin Hu,Z. Q. Mao###
(1206035, 1206036)
 Type-I WSMs with breaking of IS or TRS and type-II WSMs with ISbreaking have been realized experimentally, but TRS-breaking type-II WSM<missing VAR> stillremains elusive.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Evidence for a magnetic-field induced ideal type-II Weyl state in antiferromagnetic topological insulator Mn(Bi1-xSbx)2Te4|Seng Huat Lee,David Graf,Yanglin Zhu,Hemian Yi,Samuel Ciocys,Eun Sang Choi,Rabindra Basnet,Arash Fereidouni,Aaron Wegner,Yi-Fan Zhao,Lujin Min,Katrina Verlinde,Jingyang He,Ronald Redwing,V. Gopalan,Hugh O. H. Churchill,Alessandra Lanzara,Nitin Samarth,Cui-Zu Chang,Jin Hu,Z. Q. Mao###
(1206047, 1206047)
 In this article, we report an ideal TRS-breaking type-II WSM<missing VAR>with only one pair of Weyl nodes observed in the antiferromagnetic topologicalinsulator Mn(Bi1-xSbx)2Te4 under magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Evidence for a magnetic-field induced ideal type-II Weyl state in antiferromagnetic topological insulator Mn(Bi1-xSbx)2Te4|Seng Huat Lee,David Graf,Yanglin Zhu,Hemian Yi,Samuel Ciocys,Eun Sang Choi,Rabindra Basnet,Arash Fereidouni,Aaron Wegner,Yi-Fan Zhao,Lujin Min,Katrina Verlinde,Jingyang He,Ronald Redwing,V. Gopalan,Hugh O. H. Churchill,Alessandra Lanzara,Nitin Samarth,Cui-Zu Chang,Jin Hu,Z. Q. Mao###
(1206064, 1206064)
 In this article, we report an ideal TRS-breaking type-II WSM<missing VAR>with only one pair of Weyl nodes observed in the antiferromagnetic topologicalinsulator Mn(Bi1-xSbx)2Te4 under magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Evidence for a magnetic-field induced ideal type-II Weyl state in antiferromagnetic topological insulator Mn(Bi1-xSbx)2Te4|Seng Huat Lee,David Graf,Yanglin Zhu,Hemian Yi,Samuel Ciocys,Eun Sang Choi,Rabindra Basnet,Arash Fereidouni,Aaron Wegner,Yi-Fan Zhao,Lujin Min,Katrina Verlinde,Jingyang He,Ronald Redwing,V. Gopalan,Hugh O. H. Churchill,Alessandra Lanzara,Nitin Samarth,Cui-Zu Chang,Jin Hu,Z. Q. Mao###
(1206070, 1206071)
 In this article, we report an ideal TRS-breaking type-II WSM<missing VAR>with only one pair of Weyl nodes observed in the antiferromagnetic topologicalinsulator Mn(Bi1-xSbx)2Te4 under magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WS
###Evidence for a magnetic-field induced ideal type-II Weyl state in antiferromagnetic topological insulator Mn(Bi1-xSbx)2Te4|Seng Huat Lee,David Graf,Yanglin Zhu,Hemian Yi,Samuel Ciocys,Eun Sang Choi,Rabindra Basnet,Arash Fereidouni,Aaron Wegner,Yi-Fan Zhao,Lujin Min,Katrina Verlinde,Jingyang He,Ronald Redwing,V. Gopalan,Hugh O. H. Churchill,Alessandra Lanzara,Nitin Samarth,Cui-Zu Chang,Jin Hu,Z. Q. Mao###
(1206073, 1206074)
 In this article, we report an ideal TRS-breaking type-II WSM<missing VAR>with only one pair of Weyl nodes observed in the antiferromagnetic topologicalinsulator Mn(Bi1-xSbx)2Te4 under magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Evidence for a magnetic-field induced ideal type-II Weyl state in antiferromagnetic topological insulator Mn(Bi1-xSbx)2Te4|Seng Huat Lee,David Graf,Yanglin Zhu,Hemian Yi,Samuel Ciocys,Eun Sang Choi,Rabindra Basnet,Arash Fereidouni,Aaron Wegner,Yi-Fan Zhao,Lujin Min,Katrina Verlinde,Jingyang He,Ronald Redwing,V. Gopalan,Hugh O. H. Churchill,Alessandra Lanzara,Nitin Samarth,Cui-Zu Chang,Jin Hu,Z. Q. Mao###
(1206105, 1206105)
 In this article, we report an ideal TRS-breaking type-II WSM<missing VAR>with only one pair of Weyl nodes observed in the antiferromagnetic topologicalinsulator Mn(Bi1-xSbx)2Te4 under magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi1-x
###Evidence for a magnetic-field induced ideal type-II Weyl state in antiferromagnetic topological insulator Mn(Bi1-xSbx)2Te4|Seng Huat Lee,David Graf,Yanglin Zhu,Hemian Yi,Samuel Ciocys,Eun Sang Choi,Rabindra Basnet,Arash Fereidouni,Aaron Wegner,Yi-Fan Zhao,Lujin Min,Katrina Verlinde,Jingyang He,Ronald Redwing,V. Gopalan,Hugh O. H. Churchill,Alessandra Lanzara,Nitin Samarth,Cui-Zu Chang,Jin Hu,Z. Q. Mao###
(1206107, 1206110)
 In this article, we report an ideal TRS-breaking type-II WSM<missing VAR>with only one pair of Weyl nodes observed in the antiferromagnetic topologicalinsulator Mn(Bi1-xSbx)2Te4 under magnetic fields.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

Te4
###Evidence for a magnetic-field induced ideal type-II Weyl state in antiferromagnetic topological insulator Mn(Bi1-xSbx)2Te4|Seng Huat Lee,David Graf,Yanglin Zhu,Hemian Yi,Samuel Ciocys,Eun Sang Choi,Rabindra Basnet,Arash Fereidouni,Aaron Wegner,Yi-Fan Zhao,Lujin Min,Katrina Verlinde,Jingyang He,Ronald Redwing,V. Gopalan,Hugh O. H. Churchill,Alessandra Lanzara,Nitin Samarth,Cui-Zu Chang,Jin Hu,Z. Q. Mao###
(1206114, 1206115)
 In this article, we report an ideal TRS-breaking type-II WSM<missing VAR>with only one pair of Weyl nodes observed in the antiferromagnetic topologicalinsulator Mn(Bi1-xSbx)2Te4 under magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Evidence for a magnetic-field induced ideal type-II Weyl state in antiferromagnetic topological insulator Mn(Bi1-xSbx)2Te4|Seng Huat Lee,David Graf,Yanglin Zhu,Hemian Yi,Samuel Ciocys,Eun Sang Choi,Rabindra Basnet,Arash Fereidouni,Aaron Wegner,Yi-Fan Zhao,Lujin Min,Katrina Verlinde,Jingyang He,Ronald Redwing,V. Gopalan,Hugh O. H. Churchill,Alessandra Lanzara,Nitin Samarth,Cui-Zu Chang,Jin Hu,Z. Q. Mao###
(1206235, 1206235)
 Our results establish apromising platform for exploring the physics underlying the long-sought, idealTRS breaking type-II WSM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Evidence for a magnetic-field induced ideal type-II Weyl state in antiferromagnetic topological insulator Mn(Bi1-xSbx)2Te4|Seng Huat Lee,David Graf,Yanglin Zhu,Hemian Yi,Samuel Ciocys,Eun Sang Choi,Rabindra Basnet,Arash Fereidouni,Aaron Wegner,Yi-Fan Zhao,Lujin Min,Katrina Verlinde,Jingyang He,Ronald Redwing,V. Gopalan,Hugh O. H. Churchill,Alessandra Lanzara,Nitin Samarth,Cui-Zu Chang,Jin Hu,Z. Q. Mao###
(1206241, 1206242)
 Our results establish apromising platform for exploring the physics underlying the long-sought, idealTRS breaking type-II WSM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WS
###Evidence for a magnetic-field induced ideal type-II Weyl state in antiferromagnetic topological insulator Mn(Bi1-xSbx)2Te4|Seng Huat Lee,David Graf,Yanglin Zhu,Hemian Yi,Samuel Ciocys,Eun Sang Choi,Rabindra Basnet,Arash Fereidouni,Aaron Wegner,Yi-Fan Zhao,Lujin Min,Katrina Verlinde,Jingyang He,Ronald Redwing,V. Gopalan,Hugh O. H. Churchill,Alessandra Lanzara,Nitin Samarth,Cui-Zu Chang,Jin Hu,Z. Q. Mao###
(1206244, 1206245)
 Our results establish apromising platform for exploring the physics underlying the long-sought, idealTRS breaking type-II WSM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

UTe2
###Tuning magnetic confinement of spin-triplet superconductivity|Wen-Chen Lin,Daniel J. Campbell,Sheng Ran,I-Lin Liu,Hyunsoo Kim,Andriy H. Nevidomskyy,David Graf,Nicholas P. Butch,Johnpierre Paglione###
(1206325, 1206327)
 Electrical magnetoresistance and tunnel diode oscillator measurements wereperformed under external magnetic fields up to 41 T applied along thecrystallographic b<missing VAR>-axis (hard axis) of UTe2 as a function of temperature andapplied pressures up to 18.8 kbar.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[23.0, 41, 'T', 0],[22.0, 18.8, 'kbar', 0]

In
###Tuning magnetic confinement of spin-triplet superconductivity|Wen-Chen Lin,Daniel J. Campbell,Sheng Ran,I-Lin Liu,Hyunsoo Kim,Andriy H. Nevidomskyy,David Graf,Nicholas P. Butch,Johnpierre Paglione###
(1206352, 1206352)
 In this work, we track the field-inducedfirst-order transition between superconducting and magnetic field-polarizedphases as a function of applied pressure, showing a suppression of thetransition with increasing pressure until the demise of superconductivity near16 kbar and the appearance of a pressure-induced ferromagnetic-like groundstate that is distinct from the field-polarized phase and stable at zero field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 41, 'T', 1],[3.0, 18.8, 'kbar', 1]

SO
###Modulation of field-like spin orbit torque in heavy metal / ferromagnet heterostructure|Zilu Wang,Houyi Cheng,Kewen Shi,Yang Liu,Junfeng Qiao,Daoqian Zhu,Wenlong Cai,Xueying Zhang,Sylvain Eimer,Dapeng Zhu,Jie Zhang,Albert Fert,Weisheng Zhao###
(1206635, 1206636)
 Recent studies rediscovered the crucial role of field-like spin orbit torque(SOT) in nanosecond-timescale SOT<missing VAR> dynamics.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Modulation of field-like spin orbit torque in heavy metal / ferromagnet heterostructure|Zilu Wang,Houyi Cheng,Kewen Shi,Yang Liu,Junfeng Qiao,Daoqian Zhu,Wenlong Cai,Xueying Zhang,Sylvain Eimer,Dapeng Zhu,Jie Zhang,Albert Fert,Weisheng Zhao###
(1206646, 1206647)
 Recent studies rediscovered the crucial role of field-like spin orbit torque(SOT) in nanosecond-timescale SOT<missing VAR> dynamics.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Modulation of field-like spin orbit torque in heavy metal / ferromagnet heterostructure|Zilu Wang,Houyi Cheng,Kewen Shi,Yang Liu,Junfeng Qiao,Daoqian Zhu,Wenlong Cai,Xueying Zhang,Sylvain Eimer,Dapeng Zhu,Jie Zhang,Albert Fert,Weisheng Zhao###
(1206698, 1206699)
 Here, we experimentallymodulate the field-like SOT<missing VAR> in W/CoFeB/MgO trilayers through tuning theinterfacial spin accumulation.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W/CoFeB/MgO
###Modulation of field-like spin orbit torque in heavy metal / ferromagnet heterostructure|Zilu Wang,Houyi Cheng,Kewen Shi,Yang Liu,Junfeng Qiao,Daoqian Zhu,Wenlong Cai,Xueying Zhang,Sylvain Eimer,Dapeng Zhu,Jie Zhang,Albert Fert,Weisheng Zhao###
(1206704, 1206711)
 Here, we experimentallymodulate the field-like SOT<missing VAR> in W/CoFeB/MgO trilayers through tuning theinterfacial spin accumulation.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

CoFeB
###Modulation of field-like spin orbit torque in heavy metal / ferromagnet heterostructure|Zilu Wang,Houyi Cheng,Kewen Shi,Yang Liu,Junfeng Qiao,Daoqian Zhu,Wenlong Cai,Xueying Zhang,Sylvain Eimer,Dapeng Zhu,Jie Zhang,Albert Fert,Weisheng Zhao###
(1206751, 1206753)
 By performing spin Hall magnetoresistancemeasurement, we find that the CoFeB with enhanced spin dephasing, eithergenerated from larger layer thickness or from proper annealing, can distinctlyboost the spin absorption and enhance the interfacial spin mixing conductanceGr.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Modulation of field-like spin orbit torque in heavy metal / ferromagnet heterostructure|Zilu Wang,Houyi Cheng,Kewen Shi,Yang Liu,Junfeng Qiao,Daoqian Zhu,Wenlong Cai,Xueying Zhang,Sylvain Eimer,Dapeng Zhu,Jie Zhang,Albert Fert,Weisheng Zhao###
(1206938, 1206939)
 Our workshows a new path to further improve the performance of SOT<missing VAR>-based magneticdevices.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nd
###Fermi surface transformation at the pseudogap critical point of a cuprate superconductor|Yawen Fang,Gael Grissonnanche,Anaelle Legros,Simon Verret,Francis Laliberte,Clement Collignon,Amirreza Ataei,Maxime Dion,Jianshi Zhou,David Graf,M. J. Lawler,Paul Goddard,Louis Taillefer,B. J. Ramshaw###
(1207114, 1207114)
 Here we useangle-dependent magnetoresistance (ADMR) to measure the Fermi surface of thecuprate Nd-L<missing VAR>SCO.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SCO
###Fermi surface transformation at the pseudogap critical point of a cuprate superconductor|Yawen Fang,Gael Grissonnanche,Anaelle Legros,Simon Verret,Francis Laliberte,Clement Collignon,Amirreza Ataei,Maxime Dion,Jianshi Zhou,David Graf,M. J. Lawler,Paul Goddard,Louis Taillefer,B. J. Ramshaw###
(1207117, 1207119)
 Here we useangle-dependent magnetoresistance (ADMR) to measure the Fermi surface of thecuprate Nd-L<missing VAR>SCO.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Dynamical time-reversal and inversion symmetry breaking, dimensional crossover, and chiral anomaly in $α$-(BEDT-TTF)$_2$I$_3$|Takao Morinari###
(1207666, 1207666)
Dynamical time-reversal and inversion symmetry breaking, dimensional crossover, and chiral anomaly in -(BEDT-TTF)2I3.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Dynamical time-reversal and inversion symmetry breaking, dimensional crossover, and chiral anomaly in $α$-(BEDT-TTF)$_2$I$_3$|Takao Morinari###
(1207673, 1207673)
Dynamical time-reversal and inversion symmetry breaking, dimensional crossover, and chiral anomaly in -(BEDT-TTF)2I3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I3
###Dynamical time-reversal and inversion symmetry breaking, dimensional crossover, and chiral anomaly in $α$-(BEDT-TTF)$_2$I$_3$|Takao Morinari###
(1207676, 1207677)
Dynamical time-reversal and inversion symmetry breaking, dimensional crossover, and chiral anomaly in -(BEDT-TTF)2I3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Dynamical time-reversal and inversion symmetry breaking, dimensional crossover, and chiral anomaly in $α$-(BEDT-TTF)$_2$I$_3$|Takao Morinari###
(1207680, 1207680)
 In most Dirac semimetals, time-reversal and inversion symmetries are believedto play a crucial role in their stability.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Dynamical time-reversal and inversion symmetry breaking, dimensional crossover, and chiral anomaly in $α$-(BEDT-TTF)$_2$I$_3$|Takao Morinari###
(1207754, 1207754)
 We demonstrate that these symmetriesare broken in Dirac fermions in the organic conductoralpha-(BEDT-TTF)2I3 due to the strong electronic correlation.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Dynamical time-reversal and inversion symmetry breaking, dimensional crossover, and chiral anomaly in $α$-(BEDT-TTF)$_2$I$_3$|Takao Morinari###
(1207761, 1207761)
 We demonstrate that these symmetriesare broken in Dirac fermions in the organic conductoralpha-(BEDT-TTF)2I3 due to the strong electronic correlation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I3
###Dynamical time-reversal and inversion symmetry breaking, dimensional crossover, and chiral anomaly in $α$-(BEDT-TTF)$_2$I$_3$|Takao Morinari###
(1207764, 1207765)
 We demonstrate that these symmetriesare broken in Dirac fermions in the organic conductoralpha-(BEDT-TTF)2I3 due to the strong electronic correlation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Dynamical time-reversal and inversion symmetry breaking, dimensional crossover, and chiral anomaly in $α$-(BEDT-TTF)$_2$I$_3$|Takao Morinari###
(1207795, 1207796)
 Thesystem is a three-dimensional type-II Dirac semimetal in the coherentinter-layer tunneling regime.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Dynamical time-reversal and inversion symmetry breaking, dimensional crossover, and chiral anomaly in $α$-(BEDT-TTF)$_2$I$_3$|Takao Morinari###
(1207878, 1207878)
 Our result suggests that alpha-(BEDT-TTF)2I3 is auseful platform to explore the interplay between the chiral anomaly and thestrong correlation and/or dimensionality.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Dynamical time-reversal and inversion symmetry breaking, dimensional crossover, and chiral anomaly in $α$-(BEDT-TTF)$_2$I$_3$|Takao Morinari###
(1207885, 1207885)
 Our result suggests that alpha-(BEDT-TTF)2I3 is auseful platform to explore the interplay between the chiral anomaly and thestrong correlation and/or dimensionality.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I3
###Dynamical time-reversal and inversion symmetry breaking, dimensional crossover, and chiral anomaly in $α$-(BEDT-TTF)$_2$I$_3$|Takao Morinari###
(1207888, 1207889)
 Our result suggests that alpha-(BEDT-TTF)2I3 is auseful platform to explore the interplay between the chiral anomaly and thestrong correlation and/or dimensionality.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Gd2PdSi3
###Anomalous Magnetoresistance in Centrosymmetric Skyrmion-Lattice Magnet Gd2PdSi3|Han Zhang,Qing Huang,Lin Hao,Junyi Yang,Kyle Noordhoek,Shashi Pandey,Haidong Zhou,Jian Liu###
(1207954, 1207958)
Anomalous Magnetoresistance in Centrosymmetric Skyrmion-Lattice Magnet Gd2PdSi3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Gd2PdSi3
###Anomalous Magnetoresistance in Centrosymmetric Skyrmion-Lattice Magnet Gd2PdSi3|Han Zhang,Qing Huang,Lin Hao,Junyi Yang,Kyle Noordhoek,Shashi Pandey,Haidong Zhou,Jian Liu###
(1207995, 1207999)
 We performed a systematic study of the temperature- and field-dependence ofmagnetization and resistivity of Gd2PdSi3, which is a centrosymmetric skyrmioncrystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Anomalous Magnetoresistance in Centrosymmetric Skyrmion-Lattice Magnet Gd2PdSi3|Han Zhang,Qing Huang,Lin Hao,Junyi Yang,Kyle Noordhoek,Shashi Pandey,Haidong Zhou,Jian Liu###
(1208097, 1208097)
 In addition, the crossover boundary intothe field-induced ferromagnetic state is also identified.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Anomalous Magnetoresistance in Centrosymmetric Skyrmion-Lattice Magnet Gd2PdSi3|Han Zhang,Qing Huang,Lin Hao,Junyi Yang,Kyle Noordhoek,Shashi Pandey,Haidong Zhou,Jian Liu###
(1208149, 1208149)
 Our results suggestthat the ferromagnetic spin fluctuations above the Neel temperature play akey role in the high sensitivity of the resistivity anomalies to magneticfield, pointing to the rich interplay of different magnetic correlations atzero and finite wave vectors underlying the skyrmion lattice in this frustrateditinerant magnet.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu2OSeO3
###All-electrical detection of skyrmion lattice state and chiral surface twists|A. Aqeel,M. Azhar,N. Vlietstra,A. Pozzi,J. Sahliger,H. Huebl,T. T. M. Palstra,C. H. Back,M. Mostovoy###
(1208294, 1208299)
 We study the high-temperature phase diagram of the chiral magnetic insulatorCu2OSeO3 by measuring the spin-Hall magnetoresistance (SMR) in a thin Ptelectrode.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###All-electrical detection of skyrmion lattice state and chiral surface twists|A. Aqeel,M. Azhar,N. Vlietstra,A. Pozzi,J. Sahliger,H. Huebl,T. T. M. Palstra,C. H. Back,M. Mostovoy###
(1208314, 1208314)
 We study the high-temperature phase diagram of the chiral magnetic insulatorCu2OSeO3 by measuring the spin-Hall magnetoresistance (SMR) in a thin Ptelectrode.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###All-electrical detection of skyrmion lattice state and chiral surface twists|A. Aqeel,M. Azhar,N. Vlietstra,A. Pozzi,J. Sahliger,H. Huebl,T. T. M. Palstra,C. H. Back,M. Mostovoy###
(1208325, 1208325)
 We study the high-temperature phase diagram of the chiral magnetic insulatorCu2OSeO3 by measuring the spin-Hall magnetoresistance (SMR) in a thin Ptelectrode.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###All-electrical detection of skyrmion lattice state and chiral surface twists|A. Aqeel,M. Azhar,N. Vlietstra,A. Pozzi,J. Sahliger,H. Huebl,T. T. M. Palstra,C. H. Back,M. Mostovoy###
(1208353, 1208353)
 We find distinct changes in the phase and amplitude of the SMRsignal at critical lines separating different magnetic phases of bulkCu2OSeO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu2OSeO3
###All-electrical detection of skyrmion lattice state and chiral surface twists|A. Aqeel,M. Azhar,N. Vlietstra,A. Pozzi,J. Sahliger,H. Huebl,T. T. M. Palstra,C. H. Back,M. Mostovoy###
(1208379, 1208384)
 We find distinct changes in the phase and amplitude of the SMRsignal at critical lines separating different magnetic phases of bulkCu2OSeO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###All-electrical detection of skyrmion lattice state and chiral surface twists|A. Aqeel,M. Azhar,N. Vlietstra,A. Pozzi,J. Sahliger,H. Huebl,T. T. M. Palstra,C. H. Back,M. Mostovoy###
(1208409, 1208409)
 The skyrmion lattice state appears as a strong dip in the SMRphase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###All-electrical detection of skyrmion lattice state and chiral surface twists|A. Aqeel,M. Azhar,N. Vlietstra,A. Pozzi,J. Sahliger,H. Huebl,T. T. M. Palstra,C. H. Back,M. Mostovoy###
(1208427, 1208427)
 A strong enhancement of the SMR amplitude is observed in the conicalspiral state, which we explain by an additional symmetry-allowed contributionto the SMR present in non-collinear magnets.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###All-electrical detection of skyrmion lattice state and chiral surface twists|A. Aqeel,M. Azhar,N. Vlietstra,A. Pozzi,J. Sahliger,H. Huebl,T. T. M. Palstra,C. H. Back,M. Mostovoy###
(1208472, 1208472)
 A strong enhancement of the SMR amplitude is observed in the conicalspiral state, which we explain by an additional symmetry-allowed contributionto the SMR present in non-collinear magnets.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###All-electrical detection of skyrmion lattice state and chiral surface twists|A. Aqeel,M. Azhar,N. Vlietstra,A. Pozzi,J. Sahliger,H. Huebl,T. T. M. Palstra,C. H. Back,M. Mostovoy###
(1208495, 1208495)
 We demonstrate that the SMR can beused as an all-electrical probe of chiral surface twists and skyrmions inmagnetic insulators.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Electrically-Tunable Stochasticity for Spin-based Neuromorphic Circuits: Self-Adjusting to Variation|Hossein Pourmeidani,Punyashloka Debashis,Zhihong Chen,Ronald F. DeMara,Ramtin Zand###
(1209005, 1209005)
 Using aMagnetoresistive Random Access Memory (MRAM) probabilistic device (p<missing VAR>-bit) asthe basis of neuronal structures in Deep Belief Networks (D<missing VAR>BNs), the impact ofreducing the Magnetic Tunnel Junctions<missing VAR> (MTJs) energy barrier is assessed andoptimized for the resulting stochasticity present in the learning system.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 2.0, 'kT', 2],[155.0, 0.5, 'kT', 2]

B
###Electrically-Tunable Stochasticity for Spin-based Neuromorphic Circuits: Self-Adjusting to Variation|Hossein Pourmeidani,Punyashloka Debashis,Zhihong Chen,Ronald F. DeMara,Ramtin Zand###
(1209087, 1209087)
 Thiscan mitigate the process variation sensitivity of stochastic D<missing VAR>BNs whichencounter a sharp drop-off when energy barriers exceed near-zero kT.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 2.0, 'kT', 1],[73.0, 0.5, 'kT', 1]

As
###Electrically-Tunable Stochasticity for Spin-based Neuromorphic Circuits: Self-Adjusting to Variation|Hossein Pourmeidani,Punyashloka Debashis,Zhihong Chen,Ronald F. DeMara,Ramtin Zand###
(1209119, 1209119)
 Asevaluated for the M<missing VAR>NIST<missing VAR> dataset for energy barriers at near-zero kT to 2.0 kTin increments of 0.5 kT, it is shown that the stability factor changes by 5orders of magnitude.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 2.0, 'kT', 0],[41.0, 0.5, 'kT', 0]

NIS
###Electrically-Tunable Stochasticity for Spin-based Neuromorphic Circuits: Self-Adjusting to Variation|Hossein Pourmeidani,Punyashloka Debashis,Zhihong Chen,Ronald F. DeMara,Ramtin Zand###
(1209129, 1209131)
 Asevaluated for the M<missing VAR>NIST<missing VAR> dataset for energy barriers at near-zero kT to 2.0 kTin increments of 0.5 kT, it is shown that the stability factor changes by 5orders of magnitude.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 2.0, 'kT', 0],[29.0, 0.5, 'kT', 0]

SrAgSb
###Study of single crystalline SrAgSb and SrAuSb semimetals|P. Devi,Lin-Lin Wang,Caiden Abel,Sergey L. Bud'ko,Paul C. Canfield###
(1209257, 1209259)
Study of single crystalline SrAgSb and SrAuSb semimetals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[187.0, 2.4, 'and', 3],[189.0, 3.4, ',', 3],[219.0, 17, '%', 3],[226.0, 70, '%', 3],[230.0, 4, 'K', 3]

SrAuSb
###Study of single crystalline SrAgSb and SrAuSb semimetals|P. Devi,Lin-Lin Wang,Caiden Abel,Sergey L. Bud'ko,Paul C. Canfield###
(1209263, 1209265)
Study of single crystalline SrAgSb and SrAuSb semimetals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 2.4, 'and', 3],[183.0, 3.4, ',', 3],[213.0, 17, '%', 3],[220.0, 70, '%', 3],[224.0, 4, 'K', 3]

SrAgSb
###Study of single crystalline SrAgSb and SrAuSb semimetals|P. Devi,Lin-Lin Wang,Caiden Abel,Sergey L. Bud'ko,Paul C. Canfield###
(1209318, 1209320)
 Given renewed interest in the electronic properties of semimetallic compoundswith varying degrees of spin orbit coupling we have grown single crystals ofSrAgSb and SrAuSb, measured their temperature and field dependent electricalresistivity and magnetization and performed density functional theory (DFT)band structure calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 2.4, 'and', 2],[128.0, 3.4, ',', 2],[158.0, 17, '%', 2],[165.0, 70, '%', 2],[169.0, 4, 'K', 2]

SrAuSb
###Study of single crystalline SrAgSb and SrAuSb semimetals|P. Devi,Lin-Lin Wang,Caiden Abel,Sergey L. Bud'ko,Paul C. Canfield###
(1209324, 1209326)
 Given renewed interest in the electronic properties of semimetallic compoundswith varying degrees of spin orbit coupling we have grown single crystals ofSrAgSb and SrAuSb, measured their temperature and field dependent electricalresistivity and magnetization and performed density functional theory (DFT)band structure calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 2.4, 'and', 2],[122.0, 3.4, ',', 2],[152.0, 17, '%', 2],[159.0, 70, '%', 2],[163.0, 4, 'K', 2]

SrAgSb
###Study of single crystalline SrAgSb and SrAuSb semimetals|P. Devi,Lin-Lin Wang,Caiden Abel,Sergey L. Bud'ko,Paul C. Canfield###
(1209500, 1209502)
Although the residual resistivity ratio (RRR) for all samples studied wasrelatively low, ranging between 2.4 and 3.4, the compounds had non-saturatingmagnetoresistance (MR), reaching values of sim 17% and sim 70% at 4 K and9 T<missing VAR> for SrAgSb and SrAuSb respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 2.4, 'and', 0],[52.0, 3.4, ',', 0],[22.0, 17, '%', 0],[15.0, 70, '%', 0],[11.0, 4, 'K', 0]

SrAuSb
###Study of single crystalline SrAgSb and SrAuSb semimetals|P. Devi,Lin-Lin Wang,Caiden Abel,Sergey L. Bud'ko,Paul C. Canfield###
(1209506, 1209508)
Although the residual resistivity ratio (RRR) for all samples studied wasrelatively low, ranging between 2.4 and 3.4, the compounds had non-saturatingmagnetoresistance (MR), reaching values of sim 17% and sim 70% at 4 K and9 T<missing VAR> for SrAgSb and SrAuSb respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 2.4, 'and', 0],[58.0, 3.4, ',', 0],[28.0, 17, '%', 0],[21.0, 70, '%', 0],[17.0, 4, 'K', 0]

Sr
###Study of single crystalline SrAgSb and SrAuSb semimetals|P. Devi,Lin-Lin Wang,Caiden Abel,Sergey L. Bud'ko,Paul C. Canfield###
(1209537, 1209537)
 Band structure calculations, using theexperimentally determined Wyckoff positions for the Sr, Ag/Au, and Sb atoms,show that whereas SrAgSb is a topologically trivial, but compensated,semimetal; SrAuSb is a topologically non-trivial, Dirac semimetal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 2.4, 'and', 1],[89.0, 3.4, ',', 1],[59.0, 17, '%', 1],[52.0, 70, '%', 1],[48.0, 4, 'K', 1]

Ag/Au
###Study of single crystalline SrAgSb and SrAuSb semimetals|P. Devi,Lin-Lin Wang,Caiden Abel,Sergey L. Bud'ko,Paul C. Canfield###
(1209540, 1209542)
 Band structure calculations, using theexperimentally determined Wyckoff positions for the Sr, Ag/Au, and Sb atoms,show that whereas SrAgSb is a topologically trivial, but compensated,semimetal; SrAuSb is a topologically non-trivial, Dirac semimetal.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[94.0, 2.4, 'and', 1],[92.0, 3.4, ',', 1],[62.0, 17, '%', 1],[55.0, 70, '%', 1],[51.0, 4, 'K', 1]

Sb
###Study of single crystalline SrAgSb and SrAuSb semimetals|P. Devi,Lin-Lin Wang,Caiden Abel,Sergey L. Bud'ko,Paul C. Canfield###
(1209547, 1209547)
 Band structure calculations, using theexperimentally determined Wyckoff positions for the Sr, Ag/Au, and Sb atoms,show that whereas SrAgSb is a topologically trivial, but compensated,semimetal; SrAuSb is a topologically non-trivial, Dirac semimetal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 2.4, 'and', 1],[99.0, 3.4, ',', 1],[69.0, 17, '%', 1],[62.0, 70, '%', 1],[58.0, 4, 'K', 1]

SrAgSb
###Study of single crystalline SrAgSb and SrAuSb semimetals|P. Devi,Lin-Lin Wang,Caiden Abel,Sergey L. Bud'ko,Paul C. Canfield###
(1209559, 1209561)
 Band structure calculations, using theexperimentally determined Wyckoff positions for the Sr, Ag/Au, and Sb atoms,show that whereas SrAgSb is a topologically trivial, but compensated,semimetal; SrAuSb is a topologically non-trivial, Dirac semimetal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 2.4, 'and', 1],[111.0, 3.4, ',', 1],[81.0, 17, '%', 1],[74.0, 70, '%', 1],[70.0, 4, 'K', 1]

SrAuSb
###Study of single crystalline SrAgSb and SrAuSb semimetals|P. Devi,Lin-Lin Wang,Caiden Abel,Sergey L. Bud'ko,Paul C. Canfield###
(1209581, 1209583)
 Band structure calculations, using theexperimentally determined Wyckoff positions for the Sr, Ag/Au, and Sb atoms,show that whereas SrAgSb is a topologically trivial, but compensated,semimetal; SrAuSb is a topologically non-trivial, Dirac semimetal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 2.4, 'and', 1],[133.0, 3.4, ',', 1],[103.0, 17, '%', 1],[96.0, 70, '%', 1],[92.0, 4, 'K', 1]

S
###Eddy Current Testing of Metal Cracks Using Spin Hall Magnetoresistance Sensor and Machine Learning|Yanjun Xu,Yumeng Yang,Yihong Wu###
(1209655, 1209655)
 Recently we have developed a spin Hall magnetoresistance (SMR) sensor whichoperates under AC bias and sense currents.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Eddy Current Testing of Metal Cracks Using Spin Hall Magnetoresistance Sensor and Machine Learning|Yanjun Xu,Yumeng Yang,Yihong Wu###
(1209670, 1209670)
 Recently we have developed a spin Hall magnetoresistance (SMR) sensor whichoperates under AC bias and sense currents.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Eddy Current Testing of Metal Cracks Using Spin Hall Magnetoresistance Sensor and Machine Learning|Yanjun Xu,Yumeng Yang,Yihong Wu###
(1209700, 1209700)
 Here we demonstrate boththeoretically and experimentally that the SMR sensor is uniquely suited foreddy current testing applications because both the coil and sensor utilize ACcurrent as the excitation source.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Eddy Current Testing of Metal Cracks Using Spin Hall Magnetoresistance Sensor and Machine Learning|Yanjun Xu,Yumeng Yang,Yihong Wu###
(1209738, 1209738)
 Here we demonstrate boththeoretically and experimentally that the SMR sensor is uniquely suited foreddy current testing applications because both the coil and sensor utilize ACcurrent as the excitation source.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Eddy Current Testing of Metal Cracks Using Spin Hall Magnetoresistance Sensor and Machine Learning|Yanjun Xu,Yumeng Yang,Yihong Wu###
(1209758, 1209758)
 The use of SMR sensor effectively eliminatesthe necessity of any demodulation or lock-in technique for detecting the eddycurrent, which greatly simplifies the detection system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Eddy Current Testing of Metal Cracks Using Spin Hall Magnetoresistance Sensor and Machine Learning|Yanjun Xu,Yumeng Yang,Yihong Wu###
(1209873, 1209873)
 The relatively clean signalsobtained by the SMR sensor greatly facilitates the subsequent signal analysisand ensures high accuracy in the classification of different types of crackfeatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.67Sr0.33MnO3/Pt
###Simultaneous observation of anti-damping and inverse spin Hall effect in La$_{0.67}$Sr$_{0.33}$MnO$_{3}$/Pt bilayer system|Pushpendra Gupta,Braj Bhusan Singh,Koustuv Roy,Anirban Sarkar,Markus Waschk,Thomas Brueckel,Subhankar Bedanta###
(1209950, 1209958)
Simultaneous observation of anti-damping and inverse spin Hall effect in La0.67Sr0.33MnO3/Pt bilayer system.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

La0.67Sr0.33MnO3/Pt
###Simultaneous observation of anti-damping and inverse spin Hall effect in La$_{0.67}$Sr$_{0.33}$MnO$_{3}$/Pt bilayer system|Pushpendra Gupta,Braj Bhusan Singh,Koustuv Roy,Anirban Sarkar,Markus Waschk,Thomas Brueckel,Subhankar Bedanta###
(1210015, 1210023)
 Here, by ferromagnetic resonance we have studied the dampingproperties of La0.67Sr0.33MnO3/Pt bilayers which are prepared byoxide molecular beam epitaxy.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

La0.67Sr0.33MnO3
###Simultaneous observation of anti-damping and inverse spin Hall effect in La$_{0.67}$Sr$_{0.33}$MnO$_{3}$/Pt bilayer system|Pushpendra Gupta,Braj Bhusan Singh,Koustuv Roy,Anirban Sarkar,Markus Waschk,Thomas Brueckel,Subhankar Bedanta###
(1210058, 1210064)
 The damping coefficient (alpha) ofLa0.67Sr0.33MnO3 (LSMO) single layer is found to be 0.0104.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.066,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.134,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Simultaneous observation of anti-damping and inverse spin Hall effect in La$_{0.67}$Sr$_{0.33}$MnO$_{3}$/Pt bilayer system|Pushpendra Gupta,Braj Bhusan Singh,Koustuv Roy,Anirban Sarkar,Markus Waschk,Thomas Brueckel,Subhankar Bedanta###
(1210070, 1210070)
 The damping coefficient (alpha) ofLa0.67Sr0.33MnO3 (LSMO) single layer is found to be 0.0104.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O/Pt
###Simultaneous observation of anti-damping and inverse spin Hall effect in La$_{0.67}$Sr$_{0.33}$MnO$_{3}$/Pt bilayer system|Pushpendra Gupta,Braj Bhusan Singh,Koustuv Roy,Anirban Sarkar,Markus Waschk,Thomas Brueckel,Subhankar Bedanta###
(1210096, 1210098)
However the LSMO/Pt bilayers exhibit decrease in alpha with increase in Ptthickness.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Pt
###Simultaneous observation of anti-damping and inverse spin Hall effect in La$_{0.67}$Sr$_{0.33}$MnO$_{3}$/Pt bilayer system|Pushpendra Gupta,Braj Bhusan Singh,Koustuv Roy,Anirban Sarkar,Markus Waschk,Thomas Brueckel,Subhankar Bedanta###
(1210116, 1210116)
However the LSMO/Pt bilayers exhibit decrease in alpha with increase in Ptthickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ISH
###Simultaneous observation of anti-damping and inverse spin Hall effect in La$_{0.67}$Sr$_{0.33}$MnO$_{3}$/Pt bilayer system|Pushpendra Gupta,Braj Bhusan Singh,Koustuv Roy,Anirban Sarkar,Markus Waschk,Thomas Brueckel,Subhankar Bedanta###
(1210181, 1210183)
 Further, we have investigated the angle dependentinverse spin Hall effect (ISHE) to quantify the spin pumping voltage from otherspin rectification effects such as anomalous Hall effect and anisotropicmagnetoresistance.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Simultaneous observation of anti-damping and inverse spin Hall effect in La$_{0.67}$Sr$_{0.33}$MnO$_{3}$/Pt bilayer system|Pushpendra Gupta,Braj Bhusan Singh,Koustuv Roy,Anirban Sarkar,Markus Waschk,Thomas Brueckel,Subhankar Bedanta###
(1210250, 1210250)
 We have observed high spin pumping voltage (sim20  muV).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeAs
###Ferromagnetism and giant magnetoresistance in zinc-blende FeAs monolayers embedded in semiconductor structures|Le Duc Anh,Taiki Hayakawa,Yuji Nakagawa,Hikari Shinya,Tetsuya Fukushima,Masaki Kobayashi,Hiroshi Katayama-Yoshida,Yoshihiro Iwasa,Masaaki Tanaka###
(1210306, 1210307)
Ferromagnetism and giant magnetoresistance in zinc-blende FeAs monolayers embedded in semiconductor structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[244.0, 500, '%', 3]

FeAs
###Ferromagnetism and giant magnetoresistance in zinc-blende FeAs monolayers embedded in semiconductor structures|Le Duc Anh,Taiki Hayakawa,Yuji Nakagawa,Hikari Shinya,Tetsuya Fukushima,Masaki Kobayashi,Hiroshi Katayama-Yoshida,Yoshihiro Iwasa,Masaaki Tanaka###
(1210328, 1210329)
 Material structures containing tetrahedral FeAs bonds, depending on theirdensity and geometrical distribution, can host several competing quantum groundstates ranging from superconductivity to ferromagnetism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[222.0, 500, '%', 2]

Fe
###Ferromagnetism and giant magnetoresistance in zinc-blende FeAs monolayers embedded in semiconductor structures|Le Duc Anh,Taiki Hayakawa,Yuji Nakagawa,Hikari Shinya,Tetsuya Fukushima,Masaki Kobayashi,Hiroshi Katayama-Yoshida,Yoshihiro Iwasa,Masaaki Tanaka###
(1210404, 1210404)
 Here we examinestructures of quasi two-dimensional (2D) layers of tetrahedral Fe-As bondsembedded with a regular interval in a semiconductor InAs matrix, whichresembles the crystal structure of Fe-based superconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 500, '%', 1]

As
###Ferromagnetism and giant magnetoresistance in zinc-blende FeAs monolayers embedded in semiconductor structures|Le Duc Anh,Taiki Hayakawa,Yuji Nakagawa,Hikari Shinya,Tetsuya Fukushima,Masaki Kobayashi,Hiroshi Katayama-Yoshida,Yoshihiro Iwasa,Masaaki Tanaka###
(1210406, 1210406)
 Here we examinestructures of quasi two-dimensional (2D) layers of tetrahedral Fe-As bondsembedded with a regular interval in a semiconductor InAs matrix, whichresembles the crystal structure of Fe-based superconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 500, '%', 1]

InAs
###Ferromagnetism and giant magnetoresistance in zinc-blende FeAs monolayers embedded in semiconductor structures|Le Duc Anh,Taiki Hayakawa,Yuji Nakagawa,Hikari Shinya,Tetsuya Fukushima,Masaki Kobayashi,Hiroshi Katayama-Yoshida,Yoshihiro Iwasa,Masaaki Tanaka###
(1210427, 1210428)
 Here we examinestructures of quasi two-dimensional (2D) layers of tetrahedral Fe-As bondsembedded with a regular interval in a semiconductor InAs matrix, whichresembles the crystal structure of Fe-based superconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 500, '%', 1]

Fe
###Ferromagnetism and giant magnetoresistance in zinc-blende FeAs monolayers embedded in semiconductor structures|Le Duc Anh,Taiki Hayakawa,Yuji Nakagawa,Hikari Shinya,Tetsuya Fukushima,Masaki Kobayashi,Hiroshi Katayama-Yoshida,Yoshihiro Iwasa,Masaaki Tanaka###
(1210446, 1210446)
 Here we examinestructures of quasi two-dimensional (2D) layers of tetrahedral Fe-As bondsembedded with a regular interval in a semiconductor InAs matrix, whichresembles the crystal structure of Fe-based superconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 500, '%', 1]

Fe
###Ferromagnetism and giant magnetoresistance in zinc-blende FeAs monolayers embedded in semiconductor structures|Le Duc Anh,Taiki Hayakawa,Yuji Nakagawa,Hikari Shinya,Tetsuya Fukushima,Masaki Kobayashi,Hiroshi Katayama-Yoshida,Yoshihiro Iwasa,Masaaki Tanaka###
(1210464, 1210464)
 Contrary to thecase of Fe-based pnictides, these FeAs/InAs superlattices (SLs) exhibitferromagnetism, whose Curie temperature (Tc) increases rapidly with decreasingthe InAs interval thickness t<missing VAR>InAs (Tc  t<missing VAR>InAs-3), and an extremely largemagnetoresistance up to 500% that is tunable by a gate voltage.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 500, '%', 0]

FeAs/InAs
###Ferromagnetism and giant magnetoresistance in zinc-blende FeAs monolayers embedded in semiconductor structures|Le Duc Anh,Taiki Hayakawa,Yuji Nakagawa,Hikari Shinya,Tetsuya Fukushima,Masaki Kobayashi,Hiroshi Katayama-Yoshida,Yoshihiro Iwasa,Masaaki Tanaka###
(1210473, 1210477)
 Contrary to thecase of Fe-based pnictides, these FeAs/InAs superlattices (SLs) exhibitferromagnetism, whose Curie temperature (Tc) increases rapidly with decreasingthe InAs interval thickness t<missing VAR>InAs (Tc  t<missing VAR>InAs-3), and an extremely largemagnetoresistance up to 500% that is tunable by a gate voltage.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[74.0, 500, '%', 0]

S
###Ferromagnetism and giant magnetoresistance in zinc-blende FeAs monolayers embedded in semiconductor structures|Le Duc Anh,Taiki Hayakawa,Yuji Nakagawa,Hikari Shinya,Tetsuya Fukushima,Masaki Kobayashi,Hiroshi Katayama-Yoshida,Yoshihiro Iwasa,Masaaki Tanaka###
(1210482, 1210482)
 Contrary to thecase of Fe-based pnictides, these FeAs/InAs superlattices (SLs) exhibitferromagnetism, whose Curie temperature (Tc) increases rapidly with decreasingthe InAs interval thickness t<missing VAR>InAs (Tc  t<missing VAR>InAs-3), and an extremely largemagnetoresistance up to 500% that is tunable by a gate voltage.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 500, '%', 0]

(Tc)
###Ferromagnetism and giant magnetoresistance in zinc-blende FeAs monolayers embedded in semiconductor structures|Le Duc Anh,Taiki Hayakawa,Yuji Nakagawa,Hikari Shinya,Tetsuya Fukushima,Masaki Kobayashi,Hiroshi Katayama-Yoshida,Yoshihiro Iwasa,Masaaki Tanaka###
(1210498, 1210500)
 Contrary to thecase of Fe-based pnictides, these FeAs/InAs superlattices (SLs) exhibitferromagnetism, whose Curie temperature (Tc) increases rapidly with decreasingthe InAs interval thickness t<missing VAR>InAs (Tc  t<missing VAR>InAs-3), and an extremely largemagnetoresistance up to 500% that is tunable by a gate voltage.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 500, '%', 0]

InAs
###Ferromagnetism and giant magnetoresistance in zinc-blende FeAs monolayers embedded in semiconductor structures|Le Duc Anh,Taiki Hayakawa,Yuji Nakagawa,Hikari Shinya,Tetsuya Fukushima,Masaki Kobayashi,Hiroshi Katayama-Yoshida,Yoshihiro Iwasa,Masaaki Tanaka###
(1210513, 1210514)
 Contrary to thecase of Fe-based pnictides, these FeAs/InAs superlattices (SLs) exhibitferromagnetism, whose Curie temperature (Tc) increases rapidly with decreasingthe InAs interval thickness t<missing VAR>InAs (Tc  t<missing VAR>InAs-3), and an extremely largemagnetoresistance up to 500% that is tunable by a gate voltage.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 500, '%', 0]

InAs
###Ferromagnetism and giant magnetoresistance in zinc-blende FeAs monolayers embedded in semiconductor structures|Le Duc Anh,Taiki Hayakawa,Yuji Nakagawa,Hikari Shinya,Tetsuya Fukushima,Masaki Kobayashi,Hiroshi Katayama-Yoshida,Yoshihiro Iwasa,Masaaki Tanaka###
(1210521, 1210522)
 Contrary to thecase of Fe-based pnictides, these FeAs/InAs superlattices (SLs) exhibitferromagnetism, whose Curie temperature (Tc) increases rapidly with decreasingthe InAs interval thickness t<missing VAR>InAs (Tc  t<missing VAR>InAs-3), and an extremely largemagnetoresistance up to 500% that is tunable by a gate voltage.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 500, '%', 0]

Tc
###Ferromagnetism and giant magnetoresistance in zinc-blende FeAs monolayers embedded in semiconductor structures|Le Duc Anh,Taiki Hayakawa,Yuji Nakagawa,Hikari Shinya,Tetsuya Fukushima,Masaki Kobayashi,Hiroshi Katayama-Yoshida,Yoshihiro Iwasa,Masaaki Tanaka###
(1210525, 1210525)
 Contrary to thecase of Fe-based pnictides, these FeAs/InAs superlattices (SLs) exhibitferromagnetism, whose Curie temperature (Tc) increases rapidly with decreasingthe InAs interval thickness t<missing VAR>InAs (Tc  t<missing VAR>InAs-3), and an extremely largemagnetoresistance up to 500% that is tunable by a gate voltage.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 500, '%', 0]

InAs
###Ferromagnetism and giant magnetoresistance in zinc-blende FeAs monolayers embedded in semiconductor structures|Le Duc Anh,Taiki Hayakawa,Yuji Nakagawa,Hikari Shinya,Tetsuya Fukushima,Masaki Kobayashi,Hiroshi Katayama-Yoshida,Yoshihiro Iwasa,Masaaki Tanaka###
(1210529, 1210530)
 Contrary to thecase of Fe-based pnictides, these FeAs/InAs superlattices (SLs) exhibitferromagnetism, whose Curie temperature (Tc) increases rapidly with decreasingthe InAs interval thickness t<missing VAR>InAs (Tc  t<missing VAR>InAs-3), and an extremely largemagnetoresistance up to 500% that is tunable by a gate voltage.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 500, '%', 0]

Fe
###Ferromagnetism and giant magnetoresistance in zinc-blende FeAs monolayers embedded in semiconductor structures|Le Duc Anh,Taiki Hayakawa,Yuji Nakagawa,Hikari Shinya,Tetsuya Fukushima,Masaki Kobayashi,Hiroshi Katayama-Yoshida,Yoshihiro Iwasa,Masaaki Tanaka###
(1210594, 1210594)
 Our firstprinciples calculations reveal the important role of disordered positions of Featoms in the establishment of ferromagnetism in these quasi-2D<missing VAR> FeAs-based SLs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 500, '%', 1]

FeAs
###Ferromagnetism and giant magnetoresistance in zinc-blende FeAs monolayers embedded in semiconductor structures|Le Duc Anh,Taiki Hayakawa,Yuji Nakagawa,Hikari Shinya,Tetsuya Fukushima,Masaki Kobayashi,Hiroshi Katayama-Yoshida,Yoshihiro Iwasa,Masaaki Tanaka###
(1210618, 1210619)
 Our firstprinciples calculations reveal the important role of disordered positions of Featoms in the establishment of ferromagnetism in these quasi-2D<missing VAR> FeAs-based SLs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 500, '%', 1]

S
###Ferromagnetism and giant magnetoresistance in zinc-blende FeAs monolayers embedded in semiconductor structures|Le Duc Anh,Taiki Hayakawa,Yuji Nakagawa,Hikari Shinya,Tetsuya Fukushima,Masaki Kobayashi,Hiroshi Katayama-Yoshida,Yoshihiro Iwasa,Masaaki Tanaka###
(1210623, 1210623)
 Our firstprinciples calculations reveal the important role of disordered positions of Featoms in the establishment of ferromagnetism in these quasi-2D<missing VAR> FeAs-based SLs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 500, '%', 1]

FeAs/InAs
###Ferromagnetism and giant magnetoresistance in zinc-blende FeAs monolayers embedded in semiconductor structures|Le Duc Anh,Taiki Hayakawa,Yuji Nakagawa,Hikari Shinya,Tetsuya Fukushima,Masaki Kobayashi,Hiroshi Katayama-Yoshida,Yoshihiro Iwasa,Masaaki Tanaka###
(1210638, 1210642)
These unique features mark the FeAs/InAs SLs as promising structures forspintronic applications.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[87.0, 500, '%', 2]

S
###Ferromagnetism and giant magnetoresistance in zinc-blende FeAs monolayers embedded in semiconductor structures|Le Duc Anh,Taiki Hayakawa,Yuji Nakagawa,Hikari Shinya,Tetsuya Fukushima,Masaki Kobayashi,Hiroshi Katayama-Yoshida,Yoshihiro Iwasa,Masaaki Tanaka###
(1210644, 1210644)
These unique features mark the FeAs/InAs SLs as promising structures forspintronic applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 500, '%', 2]

Ga
###Current-in-plane spin-valve magnetoresistance in ferromagnetic semiconductor (Ga,Fe)Sb heterostructures with high Curie temperature|Kengo Takase,Le Duc Anh,Kosuke Takiguchi,Masaaki Tanaka###
(1210688, 1210688)
Current-in-plane spin-valve magnetoresistance in ferromagnetic semiconductor (Ga,Fe)Sb heterostructures with high Curie temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 3.7, 'K', 2],[243.0, 0.03, 'to', 3],[245.0, 1.6, '%', 3],[261.0, 9, 'to', 3],[262.0, 3, 'nm', 3]

Fe
###Current-in-plane spin-valve magnetoresistance in ferromagnetic semiconductor (Ga,Fe)Sb heterostructures with high Curie temperature|Kengo Takase,Le Duc Anh,Kosuke Takiguchi,Masaaki Tanaka###
(1210690, 1210690)
Current-in-plane spin-valve magnetoresistance in ferromagnetic semiconductor (Ga,Fe)Sb heterostructures with high Curie temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 3.7, 'K', 2],[241.0, 0.03, 'to', 3],[243.0, 1.6, '%', 3],[259.0, 9, 'to', 3],[260.0, 3, 'nm', 3]

Sb
###Current-in-plane spin-valve magnetoresistance in ferromagnetic semiconductor (Ga,Fe)Sb heterostructures with high Curie temperature|Kengo Takase,Le Duc Anh,Kosuke Takiguchi,Masaaki Tanaka###
(1210692, 1210692)
Current-in-plane spin-valve magnetoresistance in ferromagnetic semiconductor (Ga,Fe)Sb heterostructures with high Curie temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 3.7, 'K', 2],[239.0, 0.03, 'to', 3],[241.0, 1.6, '%', 3],[257.0, 9, 'to', 3],[258.0, 3, 'nm', 3]

(CIP)
###Current-in-plane spin-valve magnetoresistance in ferromagnetic semiconductor (Ga,Fe)Sb heterostructures with high Curie temperature|Kengo Takase,Le Duc Anh,Kosuke Takiguchi,Masaaki Tanaka###
(1210725, 1210729)
 We demonstrate spin-valve magnetoresistance with a current-in-plane (CIP)configuration in (Ga,Fe)Sb / InAs (thickness t<missing VAR>mathrmInAs nm) / (Ga,Fe)Sbtrilayer heterostructures, where (Ga,Fe)Sb is a ferromagnetic semiconductor(FM<missing VAR>S) with high Curie temperature (T<missing VAR>mathrmC).
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 3.7, 'K', 1],[202.0, 0.03, 'to', 2],[204.0, 1.6, '%', 2],[220.0, 9, 'to', 2],[221.0, 3, 'nm', 2]

Ga
###Current-in-plane spin-valve magnetoresistance in ferromagnetic semiconductor (Ga,Fe)Sb heterostructures with high Curie temperature|Kengo Takase,Le Duc Anh,Kosuke Takiguchi,Masaaki Tanaka###
(1210737, 1210737)
 We demonstrate spin-valve magnetoresistance with a current-in-plane (CIP)configuration in (Ga,Fe)Sb / InAs (thickness t<missing VAR>mathrmInAs nm) / (Ga,Fe)Sbtrilayer heterostructures, where (Ga,Fe)Sb is a ferromagnetic semiconductor(FM<missing VAR>S) with high Curie temperature (T<missing VAR>mathrmC).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 3.7, 'K', 1],[194.0, 0.03, 'to', 2],[196.0, 1.6, '%', 2],[212.0, 9, 'to', 2],[213.0, 3, 'nm', 2]

Fe
###Current-in-plane spin-valve magnetoresistance in ferromagnetic semiconductor (Ga,Fe)Sb heterostructures with high Curie temperature|Kengo Takase,Le Duc Anh,Kosuke Takiguchi,Masaaki Tanaka###
(1210739, 1210739)
 We demonstrate spin-valve magnetoresistance with a current-in-plane (CIP)configuration in (Ga,Fe)Sb / InAs (thickness t<missing VAR>mathrmInAs nm) / (Ga,Fe)Sbtrilayer heterostructures, where (Ga,Fe)Sb is a ferromagnetic semiconductor(FM<missing VAR>S) with high Curie temperature (T<missing VAR>mathrmC).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 3.7, 'K', 1],[192.0, 0.03, 'to', 2],[194.0, 1.6, '%', 2],[210.0, 9, 'to', 2],[211.0, 3, 'nm', 2]

Sb
###Current-in-plane spin-valve magnetoresistance in ferromagnetic semiconductor (Ga,Fe)Sb heterostructures with high Curie temperature|Kengo Takase,Le Duc Anh,Kosuke Takiguchi,Masaaki Tanaka###
(1210741, 1210741)
 We demonstrate spin-valve magnetoresistance with a current-in-plane (CIP)configuration in (Ga,Fe)Sb / InAs (thickness t<missing VAR>mathrmInAs nm) / (Ga,Fe)Sbtrilayer heterostructures, where (Ga,Fe)Sb is a ferromagnetic semiconductor(FM<missing VAR>S) with high Curie temperature (T<missing VAR>mathrmC).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 3.7, 'K', 1],[190.0, 0.03, 'to', 2],[192.0, 1.6, '%', 2],[208.0, 9, 'to', 2],[209.0, 3, 'nm', 2]

InAs
###Current-in-plane spin-valve magnetoresistance in ferromagnetic semiconductor (Ga,Fe)Sb heterostructures with high Curie temperature|Kengo Takase,Le Duc Anh,Kosuke Takiguchi,Masaaki Tanaka###
(1210745, 1210746)
 We demonstrate spin-valve magnetoresistance with a current-in-plane (CIP)configuration in (Ga,Fe)Sb / InAs (thickness t<missing VAR>mathrmInAs nm) / (Ga,Fe)Sbtrilayer heterostructures, where (Ga,Fe)Sb is a ferromagnetic semiconductor(FM<missing VAR>S) with high Curie temperature (T<missing VAR>mathrmC).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 3.7, 'K', 1],[185.0, 0.03, 'to', 2],[187.0, 1.6, '%', 2],[203.0, 9, 'to', 2],[204.0, 3, 'nm', 2]

InAs
###Current-in-plane spin-valve magnetoresistance in ferromagnetic semiconductor (Ga,Fe)Sb heterostructures with high Curie temperature|Kengo Takase,Le Duc Anh,Kosuke Takiguchi,Masaaki Tanaka###
(1210753, 1210754)
 We demonstrate spin-valve magnetoresistance with a current-in-plane (CIP)configuration in (Ga,Fe)Sb / InAs (thickness t<missing VAR>mathrmInAs nm) / (Ga,Fe)Sbtrilayer heterostructures, where (Ga,Fe)Sb is a ferromagnetic semiconductor(FM<missing VAR>S) with high Curie temperature (T<missing VAR>mathrmC).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 3.7, 'K', 1],[177.0, 0.03, 'to', 2],[179.0, 1.6, '%', 2],[195.0, 9, 'to', 2],[196.0, 3, 'nm', 2]

Ga
###Current-in-plane spin-valve magnetoresistance in ferromagnetic semiconductor (Ga,Fe)Sb heterostructures with high Curie temperature|Kengo Takase,Le Duc Anh,Kosuke Takiguchi,Masaaki Tanaka###
(1210762, 1210762)
 We demonstrate spin-valve magnetoresistance with a current-in-plane (CIP)configuration in (Ga,Fe)Sb / InAs (thickness t<missing VAR>mathrmInAs nm) / (Ga,Fe)Sbtrilayer heterostructures, where (Ga,Fe)Sb is a ferromagnetic semiconductor(FM<missing VAR>S) with high Curie temperature (T<missing VAR>mathrmC).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 3.7, 'K', 1],[169.0, 0.03, 'to', 2],[171.0, 1.6, '%', 2],[187.0, 9, 'to', 2],[188.0, 3, 'nm', 2]

Fe
###Current-in-plane spin-valve magnetoresistance in ferromagnetic semiconductor (Ga,Fe)Sb heterostructures with high Curie temperature|Kengo Takase,Le Duc Anh,Kosuke Takiguchi,Masaaki Tanaka###
(1210764, 1210764)
 We demonstrate spin-valve magnetoresistance with a current-in-plane (CIP)configuration in (Ga,Fe)Sb / InAs (thickness t<missing VAR>mathrmInAs nm) / (Ga,Fe)Sbtrilayer heterostructures, where (Ga,Fe)Sb is a ferromagnetic semiconductor(FM<missing VAR>S) with high Curie temperature (T<missing VAR>mathrmC).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 3.7, 'K', 1],[167.0, 0.03, 'to', 2],[169.0, 1.6, '%', 2],[185.0, 9, 'to', 2],[186.0, 3, 'nm', 2]

Sb
###Current-in-plane spin-valve magnetoresistance in ferromagnetic semiconductor (Ga,Fe)Sb heterostructures with high Curie temperature|Kengo Takase,Le Duc Anh,Kosuke Takiguchi,Masaaki Tanaka###
(1210766, 1210766)
 We demonstrate spin-valve magnetoresistance with a current-in-plane (CIP)configuration in (Ga,Fe)Sb / InAs (thickness t<missing VAR>mathrmInAs nm) / (Ga,Fe)Sbtrilayer heterostructures, where (Ga,Fe)Sb is a ferromagnetic semiconductor(FM<missing VAR>S) with high Curie temperature (T<missing VAR>mathrmC).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 3.7, 'K', 1],[165.0, 0.03, 'to', 2],[167.0, 1.6, '%', 2],[183.0, 9, 'to', 2],[184.0, 3, 'nm', 2]

Ga
###Current-in-plane spin-valve magnetoresistance in ferromagnetic semiconductor (Ga,Fe)Sb heterostructures with high Curie temperature|Kengo Takase,Le Duc Anh,Kosuke Takiguchi,Masaaki Tanaka###
(1210777, 1210777)
 We demonstrate spin-valve magnetoresistance with a current-in-plane (CIP)configuration in (Ga,Fe)Sb / InAs (thickness t<missing VAR>mathrmInAs nm) / (Ga,Fe)Sbtrilayer heterostructures, where (Ga,Fe)Sb is a ferromagnetic semiconductor(FM<missing VAR>S) with high Curie temperature (T<missing VAR>mathrmC).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 3.7, 'K', 1],[154.0, 0.03, 'to', 2],[156.0, 1.6, '%', 2],[172.0, 9, 'to', 2],[173.0, 3, 'nm', 2]

Fe
###Current-in-plane spin-valve magnetoresistance in ferromagnetic semiconductor (Ga,Fe)Sb heterostructures with high Curie temperature|Kengo Takase,Le Duc Anh,Kosuke Takiguchi,Masaaki Tanaka###
(1210779, 1210779)
 We demonstrate spin-valve magnetoresistance with a current-in-plane (CIP)configuration in (Ga,Fe)Sb / InAs (thickness t<missing VAR>mathrmInAs nm) / (Ga,Fe)Sbtrilayer heterostructures, where (Ga,Fe)Sb is a ferromagnetic semiconductor(FM<missing VAR>S) with high Curie temperature (T<missing VAR>mathrmC).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 3.7, 'K', 1],[152.0, 0.03, 'to', 2],[154.0, 1.6, '%', 2],[170.0, 9, 'to', 2],[171.0, 3, 'nm', 2]

Sb
###Current-in-plane spin-valve magnetoresistance in ferromagnetic semiconductor (Ga,Fe)Sb heterostructures with high Curie temperature|Kengo Takase,Le Duc Anh,Kosuke Takiguchi,Masaaki Tanaka###
(1210781, 1210781)
 We demonstrate spin-valve magnetoresistance with a current-in-plane (CIP)configuration in (Ga,Fe)Sb / InAs (thickness t<missing VAR>mathrmInAs nm) / (Ga,Fe)Sbtrilayer heterostructures, where (Ga,Fe)Sb is a ferromagnetic semiconductor(FM<missing VAR>S) with high Curie temperature (T<missing VAR>mathrmC).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 3.7, 'K', 1],[150.0, 0.03, 'to', 2],[152.0, 1.6, '%', 2],[168.0, 9, 'to', 2],[169.0, 3, 'nm', 2]

F
###Current-in-plane spin-valve magnetoresistance in ferromagnetic semiconductor (Ga,Fe)Sb heterostructures with high Curie temperature|Kengo Takase,Le Duc Anh,Kosuke Takiguchi,Masaaki Tanaka###
(1210793, 1210793)
 We demonstrate spin-valve magnetoresistance with a current-in-plane (CIP)configuration in (Ga,Fe)Sb / InAs (thickness t<missing VAR>mathrmInAs nm) / (Ga,Fe)Sbtrilayer heterostructures, where (Ga,Fe)Sb is a ferromagnetic semiconductor(FM<missing VAR>S) with high Curie temperature (T<missing VAR>mathrmC).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 3.7, 'K', 1],[138.0, 0.03, 'to', 2],[140.0, 1.6, '%', 2],[156.0, 9, 'to', 2],[157.0, 3, 'nm', 2]

S
###Current-in-plane spin-valve magnetoresistance in ferromagnetic semiconductor (Ga,Fe)Sb heterostructures with high Curie temperature|Kengo Takase,Le Duc Anh,Kosuke Takiguchi,Masaaki Tanaka###
(1210795, 1210795)
 We demonstrate spin-valve magnetoresistance with a current-in-plane (CIP)configuration in (Ga,Fe)Sb / InAs (thickness t<missing VAR>mathrmInAs nm) / (Ga,Fe)Sbtrilayer heterostructures, where (Ga,Fe)Sb is a ferromagnetic semiconductor(FM<missing VAR>S) with high Curie temperature (T<missing VAR>mathrmC).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 3.7, 'K', 1],[136.0, 0.03, 'to', 2],[138.0, 1.6, '%', 2],[154.0, 9, 'to', 2],[155.0, 3, 'nm', 2]

C
###Current-in-plane spin-valve magnetoresistance in ferromagnetic semiconductor (Ga,Fe)Sb heterostructures with high Curie temperature|Kengo Takase,Le Duc Anh,Kosuke Takiguchi,Masaaki Tanaka###
(1210809, 1210809)
 We demonstrate spin-valve magnetoresistance with a current-in-plane (CIP)configuration in (Ga,Fe)Sb / InAs (thickness t<missing VAR>mathrmInAs nm) / (Ga,Fe)Sbtrilayer heterostructures, where (Ga,Fe)Sb is a ferromagnetic semiconductor(FM<missing VAR>S) with high Curie temperature (T<missing VAR>mathrmC).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 3.7, 'K', 1],[122.0, 0.03, 'to', 2],[124.0, 1.6, '%', 2],[140.0, 9, 'to', 2],[141.0, 3, 'nm', 2]

InAs
###Current-in-plane spin-valve magnetoresistance in ferromagnetic semiconductor (Ga,Fe)Sb heterostructures with high Curie temperature|Kengo Takase,Le Duc Anh,Kosuke Takiguchi,Masaaki Tanaka###
(1210850, 1210851)
 An MR curve with an openminor loop is clearly observed at 3.7 K in a sample with t<missing VAR>mathrmInAs  3nm, which originates from the parallel - antiparallel magnetization switchingof the (Ga,Fe)Sb layers and spin-dependent scattering at the (Ga,Fe)Sb / InAsinterfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 3.7, 'K', 0],[80.0, 0.03, 'to', 1],[82.0, 1.6, '%', 1],[98.0, 9, 'to', 1],[99.0, 3, 'nm', 1]

Ga
###Current-in-plane spin-valve magnetoresistance in ferromagnetic semiconductor (Ga,Fe)Sb heterostructures with high Curie temperature|Kengo Takase,Le Duc Anh,Kosuke Takiguchi,Masaaki Tanaka###
(1210884, 1210884)
 An MR curve with an openminor loop is clearly observed at 3.7 K in a sample with t<missing VAR>mathrmInAs  3nm, which originates from the parallel - antiparallel magnetization switchingof the (Ga,Fe)Sb layers and spin-dependent scattering at the (Ga,Fe)Sb / InAsinterfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 3.7, 'K', 0],[47.0, 0.03, 'to', 1],[49.0, 1.6, '%', 1],[65.0, 9, 'to', 1],[66.0, 3, 'nm', 1]

Fe
###Current-in-plane spin-valve magnetoresistance in ferromagnetic semiconductor (Ga,Fe)Sb heterostructures with high Curie temperature|Kengo Takase,Le Duc Anh,Kosuke Takiguchi,Masaaki Tanaka###
(1210886, 1210886)
 An MR curve with an openminor loop is clearly observed at 3.7 K in a sample with t<missing VAR>mathrmInAs  3nm, which originates from the parallel - antiparallel magnetization switchingof the (Ga,Fe)Sb layers and spin-dependent scattering at the (Ga,Fe)Sb / InAsinterfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 3.7, 'K', 0],[45.0, 0.03, 'to', 1],[47.0, 1.6, '%', 1],[63.0, 9, 'to', 1],[64.0, 3, 'nm', 1]

Sb
###Current-in-plane spin-valve magnetoresistance in ferromagnetic semiconductor (Ga,Fe)Sb heterostructures with high Curie temperature|Kengo Takase,Le Duc Anh,Kosuke Takiguchi,Masaaki Tanaka###
(1210888, 1210888)
 An MR curve with an openminor loop is clearly observed at 3.7 K in a sample with t<missing VAR>mathrmInAs  3nm, which originates from the parallel - antiparallel magnetization switchingof the (Ga,Fe)Sb layers and spin-dependent scattering at the (Ga,Fe)Sb / InAsinterfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 3.7, 'K', 0],[43.0, 0.03, 'to', 1],[45.0, 1.6, '%', 1],[61.0, 9, 'to', 1],[62.0, 3, 'nm', 1]

Ga
###Current-in-plane spin-valve magnetoresistance in ferromagnetic semiconductor (Ga,Fe)Sb heterostructures with high Curie temperature|Kengo Takase,Le Duc Anh,Kosuke Takiguchi,Masaaki Tanaka###
(1210905, 1210905)
 An MR curve with an openminor loop is clearly observed at 3.7 K in a sample with t<missing VAR>mathrmInAs  3nm, which originates from the parallel - antiparallel magnetization switchingof the (Ga,Fe)Sb layers and spin-dependent scattering at the (Ga,Fe)Sb / InAsinterfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 3.7, 'K', 0],[26.0, 0.03, 'to', 1],[28.0, 1.6, '%', 1],[44.0, 9, 'to', 1],[45.0, 3, 'nm', 1]

Fe
###Current-in-plane spin-valve magnetoresistance in ferromagnetic semiconductor (Ga,Fe)Sb heterostructures with high Curie temperature|Kengo Takase,Le Duc Anh,Kosuke Takiguchi,Masaaki Tanaka###
(1210907, 1210907)
 An MR curve with an openminor loop is clearly observed at 3.7 K in a sample with t<missing VAR>mathrmInAs  3nm, which originates from the parallel - antiparallel magnetization switchingof the (Ga,Fe)Sb layers and spin-dependent scattering at the (Ga,Fe)Sb / InAsinterfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 3.7, 'K', 0],[24.0, 0.03, 'to', 1],[26.0, 1.6, '%', 1],[42.0, 9, 'to', 1],[43.0, 3, 'nm', 1]

Sb
###Current-in-plane spin-valve magnetoresistance in ferromagnetic semiconductor (Ga,Fe)Sb heterostructures with high Curie temperature|Kengo Takase,Le Duc Anh,Kosuke Takiguchi,Masaaki Tanaka###
(1210909, 1210909)
 An MR curve with an openminor loop is clearly observed at 3.7 K in a sample with t<missing VAR>mathrmInAs  3nm, which originates from the parallel - antiparallel magnetization switchingof the (Ga,Fe)Sb layers and spin-dependent scattering at the (Ga,Fe)Sb / InAsinterfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 3.7, 'K', 0],[22.0, 0.03, 'to', 1],[24.0, 1.6, '%', 1],[40.0, 9, 'to', 1],[41.0, 3, 'nm', 1]

InAs
###Current-in-plane spin-valve magnetoresistance in ferromagnetic semiconductor (Ga,Fe)Sb heterostructures with high Curie temperature|Kengo Takase,Le Duc Anh,Kosuke Takiguchi,Masaaki Tanaka###
(1210913, 1210914)
 An MR curve with an openminor loop is clearly observed at 3.7 K in a sample with t<missing VAR>mathrmInAs  3nm, which originates from the parallel - antiparallel magnetization switchingof the (Ga,Fe)Sb layers and spin-dependent scattering at the (Ga,Fe)Sb / InAsinterfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 3.7, 'K', 0],[17.0, 0.03, 'to', 1],[19.0, 1.6, '%', 1],[35.0, 9, 'to', 1],[36.0, 3, 'nm', 1]

InAs
###Current-in-plane spin-valve magnetoresistance in ferromagnetic semiconductor (Ga,Fe)Sb heterostructures with high Curie temperature|Kengo Takase,Le Duc Anh,Kosuke Takiguchi,Masaaki Tanaka###
(1210944, 1210945)
 The MR ratio increases (from 0.03 to 1.6%) with decreasingt<missing VAR>mathrmInAs (from 9 to 3 nm) due to the enhancement of the interfacescattering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 3.7, 'K', 1],[13.0, 0.03, 'to', 0],[11.0, 1.6, '%', 0],[4.0, 9, 'to', 0],[5.0, 3, 'nm', 0]

Fe
###Current-in-plane spin-valve magnetoresistance in ferromagnetic semiconductor (Ga,Fe)Sb heterostructures with high Curie temperature|Kengo Takase,Le Duc Anh,Kosuke Takiguchi,Masaaki Tanaka###
(1210994, 1210994)
 This is the first demonstration of the spin-valve effect inFe-doped FM<missing VAR>S heterostructures, paving the way for device applications of thesehigh- T<missing VAR>mathrmC FM<missing VAR>Ss.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 3.7, 'K', 2],[63.0, 0.03, 'to', 1],[61.0, 1.6, '%', 1],[45.0, 9, 'to', 1],[44.0, 3, 'nm', 1]

F
###Current-in-plane spin-valve magnetoresistance in ferromagnetic semiconductor (Ga,Fe)Sb heterostructures with high Curie temperature|Kengo Takase,Le Duc Anh,Kosuke Takiguchi,Masaaki Tanaka###
(1210998, 1210998)
 This is the first demonstration of the spin-valve effect inFe-doped FM<missing VAR>S heterostructures, paving the way for device applications of thesehigh- T<missing VAR>mathrmC FM<missing VAR>Ss.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 3.7, 'K', 2],[67.0, 0.03, 'to', 1],[65.0, 1.6, '%', 1],[49.0, 9, 'to', 1],[48.0, 3, 'nm', 1]

S
###Current-in-plane spin-valve magnetoresistance in ferromagnetic semiconductor (Ga,Fe)Sb heterostructures with high Curie temperature|Kengo Takase,Le Duc Anh,Kosuke Takiguchi,Masaaki Tanaka###
(1211000, 1211000)
 This is the first demonstration of the spin-valve effect inFe-doped FM<missing VAR>S heterostructures, paving the way for device applications of thesehigh- T<missing VAR>mathrmC FM<missing VAR>Ss.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 3.7, 'K', 2],[69.0, 0.03, 'to', 1],[67.0, 1.6, '%', 1],[51.0, 9, 'to', 1],[50.0, 3, 'nm', 1]

C
###Current-in-plane spin-valve magnetoresistance in ferromagnetic semiconductor (Ga,Fe)Sb heterostructures with high Curie temperature|Kengo Takase,Le Duc Anh,Kosuke Takiguchi,Masaaki Tanaka###
(1211027, 1211027)
 This is the first demonstration of the spin-valve effect inFe-doped FM<missing VAR>S heterostructures, paving the way for device applications of thesehigh- T<missing VAR>mathrmC FM<missing VAR>Ss.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[189.0, 3.7, 'K', 2],[96.0, 0.03, 'to', 1],[94.0, 1.6, '%', 1],[78.0, 9, 'to', 1],[77.0, 3, 'nm', 1]

F
###Current-in-plane spin-valve magnetoresistance in ferromagnetic semiconductor (Ga,Fe)Sb heterostructures with high Curie temperature|Kengo Takase,Le Duc Anh,Kosuke Takiguchi,Masaaki Tanaka###
(1211029, 1211029)
 This is the first demonstration of the spin-valve effect inFe-doped FM<missing VAR>S heterostructures, paving the way for device applications of thesehigh- T<missing VAR>mathrmC FM<missing VAR>Ss.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[191.0, 3.7, 'K', 2],[98.0, 0.03, 'to', 1],[96.0, 1.6, '%', 1],[80.0, 9, 'to', 1],[79.0, 3, 'nm', 1]

S
###Microscopic Theory of the Spin Hall Magnetoresistance|Takeo Kato,Yuichi Ohnuma,Mamoru Matsuo###
(1211078, 1211078)
 We consider a microscopic theory for the spin Hall magnetoresistance (SMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Microscopic Theory of the Spin Hall Magnetoresistance|Takeo Kato,Yuichi Ohnuma,Mamoru Matsuo###
(1211138, 1211138)
 We revealthat SMR is composed of static and dynamic parts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Microscopic Theory of the Spin Hall Magnetoresistance|Takeo Kato,Yuichi Ohnuma,Mamoru Matsuo###
(1211290, 1211290)
 By the spin-wave approximation, we predict that the latter results in anontrivial sign change of the SMR signal at a finite temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Microscopic Theory of the Spin Hall Magnetoresistance|Takeo Kato,Yuichi Ohnuma,Mamoru Matsuo###
(1211305, 1211305)
 In addition,we derive the Onsager relation between spin conductance and thermalspin-current noise.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###SOT-MRAM based Sigmoidal Neuron for Neuromorphic Architectures|Brendan Reidy,Ramtin Zand###
(1211347, 1211348)
SOT-MRAM<missing VAR> based Sigmoidal Neuron for Neuromorphic Architectures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 74, 'x', 2],[119.0, 12, 'x', 2],[196.0, 784, 'x', 3]

In
###SOT-MRAM based Sigmoidal Neuron for Neuromorphic Architectures|Brendan Reidy,Ramtin Zand###
(1211369, 1211369)
 In this paper, the intrinsic physical characteristics of spin-orbit torque(SOT) magnetoresistive random-access memory (MRAM) devices are leveraged torealize sigmoidal neurons in neuromorphic architectures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 74, 'x', 1],[98.0, 12, 'x', 1],[175.0, 784, 'x', 2]

SO
###SOT-MRAM based Sigmoidal Neuron for Neuromorphic Architectures|Brendan Reidy,Ramtin Zand###
(1211394, 1211395)
 In this paper, the intrinsic physical characteristics of spin-orbit torque(SOT) magnetoresistive random-access memory (MRAM) devices are leveraged torealize sigmoidal neurons in neuromorphic architectures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 74, 'x', 1],[72.0, 12, 'x', 1],[149.0, 784, 'x', 2]

SO
###SOT-MRAM based Sigmoidal Neuron for Neuromorphic Architectures|Brendan Reidy,Ramtin Zand###
(1211488, 1211489)
 Performancecomparisons with the previous power- and area-efficient sigmoidal neuroncircuits exhibit 74x and 12x reduction in power-area-product values for theproposed SOT-MRAM<missing VAR> based neuron.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 74, 'x', 0],[21.0, 12, 'x', 0],[55.0, 784, 'x', 1]

SO
###SOT-MRAM based Sigmoidal Neuron for Neuromorphic Architectures|Brendan Reidy,Ramtin Zand###
(1211549, 1211550)
 To verify the functionally of the proposedneuron within larger scale designs, we have implemented a circuit realizationof a 784x16x<missing VAR>10 SOT-MRAM<missing VAR> based multiplayer perceptron (MLP) for M<missing VAR>NIST<missing VAR> patternrecognition application using SPICE<missing VAR> circuit simulation tool.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 74, 'x', 1],[82.0, 12, 'x', 1],[5.0, 784, 'x', 0]

P
###SOT-MRAM based Sigmoidal Neuron for Neuromorphic Architectures|Brendan Reidy,Ramtin Zand###
(1211567, 1211567)
 To verify the functionally of the proposedneuron within larger scale designs, we have implemented a circuit realizationof a 784x16x<missing VAR>10 SOT-MRAM<missing VAR> based multiplayer perceptron (MLP) for M<missing VAR>NIST<missing VAR> patternrecognition application using SPICE<missing VAR> circuit simulation tool.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 74, 'x', 1],[100.0, 12, 'x', 1],[23.0, 784, 'x', 0]

NIS
###SOT-MRAM based Sigmoidal Neuron for Neuromorphic Architectures|Brendan Reidy,Ramtin Zand###
(1211573, 1211575)
 To verify the functionally of the proposedneuron within larger scale designs, we have implemented a circuit realizationof a 784x16x<missing VAR>10 SOT-MRAM<missing VAR> based multiplayer perceptron (MLP) for M<missing VAR>NIST<missing VAR> patternrecognition application using SPICE<missing VAR> circuit simulation tool.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 74, 'x', 1],[106.0, 12, 'x', 1],[29.0, 784, 'x', 0]

SPIC
###SOT-MRAM based Sigmoidal Neuron for Neuromorphic Architectures|Brendan Reidy,Ramtin Zand###
(1211587, 1211590)
 To verify the functionally of the proposedneuron within larger scale designs, we have implemented a circuit realizationof a 784x16x<missing VAR>10 SOT-MRAM<missing VAR> based multiplayer perceptron (MLP) for M<missing VAR>NIST<missing VAR> patternrecognition application using SPICE<missing VAR> circuit simulation tool.
Featurization terminated normally.
0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 74, 'x', 1],[120.0, 12, 'x', 1],[43.0, 784, 'x', 0]

SO
###SOT-MRAM based Sigmoidal Neuron for Neuromorphic Architectures|Brendan Reidy,Ramtin Zand###
(1211615, 1211616)
 The resultsobtained exhibit that the proposed SOT-MRAM<missing VAR> based MLP can achieve accuraciescomparable to an ideal binarized MLP architecture implemented on G<missing VAR>PU, whilerealizing orders of magnitude increase in processing speed.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 74, 'x', 2],[148.0, 12, 'x', 2],[71.0, 784, 'x', 1]

P
###SOT-MRAM based Sigmoidal Neuron for Neuromorphic Architectures|Brendan Reidy,Ramtin Zand###
(1211628, 1211628)
 The resultsobtained exhibit that the proposed SOT-MRAM<missing VAR> based MLP can achieve accuraciescomparable to an ideal binarized MLP architecture implemented on G<missing VAR>PU, whilerealizing orders of magnitude increase in processing speed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 74, 'x', 2],[161.0, 12, 'x', 2],[84.0, 784, 'x', 1]

P
###SOT-MRAM based Sigmoidal Neuron for Neuromorphic Architectures|Brendan Reidy,Ramtin Zand###
(1211649, 1211649)
 The resultsobtained exhibit that the proposed SOT-MRAM<missing VAR> based MLP can achieve accuraciescomparable to an ideal binarized MLP architecture implemented on G<missing VAR>PU, whilerealizing orders of magnitude increase in processing speed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[185.0, 74, 'x', 2],[182.0, 12, 'x', 2],[105.0, 784, 'x', 1]

PU
###SOT-MRAM based Sigmoidal Neuron for Neuromorphic Architectures|Brendan Reidy,Ramtin Zand###
(1211658, 1211659)
 The resultsobtained exhibit that the proposed SOT-MRAM<missing VAR> based MLP can achieve accuraciescomparable to an ideal binarized MLP architecture implemented on G<missing VAR>PU, whilerealizing orders of magnitude increase in processing speed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
[194.0, 74, 'x', 2],[191.0, 12, 'x', 2],[114.0, 784, 'x', 1]

La1-xSr
###Temperature evolution of magnetic phases near the thickness-dependent metal-insulator transition in La$_{1-x}$Sr$_x$MnO$_3$ thin films observed by XMCD|Goro Shibata,Kohei Yoshimatsu,Enju Sakai,Keisuke Ishigami,Shoya Sakamoto,Yosuke Nonaka,Fan-Hsiu Chang,Hong-Ji Lin,Di-Jing Huang,Chien-Te Chen,Hiroshi Kumigashira,Atsushi Fujimori###
(1211716, 1211720)
Temperature evolution of magnetic phases near the thickness-dependent metal-insulator transition in La1-xSrx<missing VAR>MnO3 thin films observed by XMCD<missing VAR>.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

MnO3
###Temperature evolution of magnetic phases near the thickness-dependent metal-insulator transition in La$_{1-x}$Sr$_x$MnO$_3$ thin films observed by XMCD|Goro Shibata,Kohei Yoshimatsu,Enju Sakai,Keisuke Ishigami,Shoya Sakamoto,Yosuke Nonaka,Fan-Hsiu Chang,Hong-Ji Lin,Di-Jing Huang,Chien-Te Chen,Hiroshi Kumigashira,Atsushi Fujimori###
(1211722, 1211724)
Temperature evolution of magnetic phases near the thickness-dependent metal-insulator transition in La1-xSrx<missing VAR>MnO3 thin films observed by XMCD<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Temperature evolution of magnetic phases near the thickness-dependent metal-insulator transition in La$_{1-x}$Sr$_x$MnO$_3$ thin films observed by XMCD|Goro Shibata,Kohei Yoshimatsu,Enju Sakai,Keisuke Ishigami,Shoya Sakamoto,Yosuke Nonaka,Fan-Hsiu Chang,Hong-Ji Lin,Di-Jing Huang,Chien-Te Chen,Hiroshi Kumigashira,Atsushi Fujimori###
(1211736, 1211736)
Temperature evolution of magnetic phases near the thickness-dependent metal-insulator transition in La1-xSrx<missing VAR>MnO3 thin films observed by XMCD<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Temperature evolution of magnetic phases near the thickness-dependent metal-insulator transition in La$_{1-x}$Sr$_x$MnO$_3$ thin films observed by XMCD|Goro Shibata,Kohei Yoshimatsu,Enju Sakai,Keisuke Ishigami,Shoya Sakamoto,Yosuke Nonaka,Fan-Hsiu Chang,Hong-Ji Lin,Di-Jing Huang,Chien-Te Chen,Hiroshi Kumigashira,Atsushi Fujimori###
(1211775, 1211775)
 Perovskite-type manganites, which are well-known for their intriguingphysical properties such as colossal magnetoresistance (CMR) and halfmetalicity, have been considered as candidate materials for spintronics.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Temperature evolution of magnetic phases near the thickness-dependent metal-insulator transition in La$_{1-x}$Sr$_x$MnO$_3$ thin films observed by XMCD|Goro Shibata,Kohei Yoshimatsu,Enju Sakai,Keisuke Ishigami,Shoya Sakamoto,Yosuke Nonaka,Fan-Hsiu Chang,Hong-Ji Lin,Di-Jing Huang,Chien-Te Chen,Hiroshi Kumigashira,Atsushi Fujimori###
(1211814, 1211814)
However, their ferromagnetic (FM) properties are often suppressed in thin filmswhen the thickness is reduced down to several monolayers (M<missing VAR>Ls).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Temperature evolution of magnetic phases near the thickness-dependent metal-insulator transition in La$_{1-x}$Sr$_x$MnO$_3$ thin films observed by XMCD|Goro Shibata,Kohei Yoshimatsu,Enju Sakai,Keisuke Ishigami,Shoya Sakamoto,Yosuke Nonaka,Fan-Hsiu Chang,Hong-Ji Lin,Di-Jing Huang,Chien-Te Chen,Hiroshi Kumigashira,Atsushi Fujimori###
(1211857, 1211857)
 In order toinvestigate how the magnetic phases evolve near the paramagnetic (PM)-to-FM<missing VAR>phase transition boundary, we have performed temperature-dependent x<missing VAR>-raymagnetic circular dichroism (XMCD) experiments on a La1-xSrx<missing VAR>MnO3(LSMO, x<missing VAR>0.4) thin film, whose thickness (8 ML) is close to the boundarybetween the FM<missing VAR>-metallic and the PM<missing VAR>-insulating phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Temperature evolution of magnetic phases near the thickness-dependent metal-insulator transition in La$_{1-x}$Sr$_x$MnO$_3$ thin films observed by XMCD|Goro Shibata,Kohei Yoshimatsu,Enju Sakai,Keisuke Ishigami,Shoya Sakamoto,Yosuke Nonaka,Fan-Hsiu Chang,Hong-Ji Lin,Di-Jing Huang,Chien-Te Chen,Hiroshi Kumigashira,Atsushi Fujimori###
(1211883, 1211883)
 In order toinvestigate how the magnetic phases evolve near the paramagnetic (PM)-to-FM<missing VAR>phase transition boundary, we have performed temperature-dependent x<missing VAR>-raymagnetic circular dichroism (XMCD) experiments on a La1-xSrx<missing VAR>MnO3(LSMO, x<missing VAR>0.4) thin film, whose thickness (8 ML) is close to the boundarybetween the FM<missing VAR>-metallic and the PM<missing VAR>-insulating phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Temperature evolution of magnetic phases near the thickness-dependent metal-insulator transition in La$_{1-x}$Sr$_x$MnO$_3$ thin films observed by XMCD|Goro Shibata,Kohei Yoshimatsu,Enju Sakai,Keisuke Ishigami,Shoya Sakamoto,Yosuke Nonaka,Fan-Hsiu Chang,Hong-Ji Lin,Di-Jing Huang,Chien-Te Chen,Hiroshi Kumigashira,Atsushi Fujimori###
(1211889, 1211889)
 In order toinvestigate how the magnetic phases evolve near the paramagnetic (PM)-to-FM<missing VAR>phase transition boundary, we have performed temperature-dependent x<missing VAR>-raymagnetic circular dichroism (XMCD) experiments on a La1-xSrx<missing VAR>MnO3(LSMO, x<missing VAR>0.4) thin film, whose thickness (8 ML) is close to the boundarybetween the FM<missing VAR>-metallic and the PM<missing VAR>-insulating phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Temperature evolution of magnetic phases near the thickness-dependent metal-insulator transition in La$_{1-x}$Sr$_x$MnO$_3$ thin films observed by XMCD|Goro Shibata,Kohei Yoshimatsu,Enju Sakai,Keisuke Ishigami,Shoya Sakamoto,Yosuke Nonaka,Fan-Hsiu Chang,Hong-Ji Lin,Di-Jing Huang,Chien-Te Chen,Hiroshi Kumigashira,Atsushi Fujimori###
(1211924, 1211924)
 In order toinvestigate how the magnetic phases evolve near the paramagnetic (PM)-to-FM<missing VAR>phase transition boundary, we have performed temperature-dependent x<missing VAR>-raymagnetic circular dichroism (XMCD) experiments on a La1-xSrx<missing VAR>MnO3(LSMO, x<missing VAR>0.4) thin film, whose thickness (8 ML) is close to the boundarybetween the FM<missing VAR>-metallic and the PM<missing VAR>-insulating phases.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La1-xSr
###Temperature evolution of magnetic phases near the thickness-dependent metal-insulator transition in La$_{1-x}$Sr$_x$MnO$_3$ thin films observed by XMCD|Goro Shibata,Kohei Yoshimatsu,Enju Sakai,Keisuke Ishigami,Shoya Sakamoto,Yosuke Nonaka,Fan-Hsiu Chang,Hong-Ji Lin,Di-Jing Huang,Chien-Te Chen,Hiroshi Kumigashira,Atsushi Fujimori###
(1211934, 1211938)
 In order toinvestigate how the magnetic phases evolve near the paramagnetic (PM)-to-FM<missing VAR>phase transition boundary, we have performed temperature-dependent x<missing VAR>-raymagnetic circular dichroism (XMCD) experiments on a La1-xSrx<missing VAR>MnO3(LSMO, x<missing VAR>0.4) thin film, whose thickness (8 ML) is close to the boundarybetween the FM<missing VAR>-metallic and the PM<missing VAR>-insulating phases.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

MnO3
###Temperature evolution of magnetic phases near the thickness-dependent metal-insulator transition in La$_{1-x}$Sr$_x$MnO$_3$ thin films observed by XMCD|Goro Shibata,Kohei Yoshimatsu,Enju Sakai,Keisuke Ishigami,Shoya Sakamoto,Yosuke Nonaka,Fan-Hsiu Chang,Hong-Ji Lin,Di-Jing Huang,Chien-Te Chen,Hiroshi Kumigashira,Atsushi Fujimori###
(1211940, 1211942)
 In order toinvestigate how the magnetic phases evolve near the paramagnetic (PM)-to-FM<missing VAR>phase transition boundary, we have performed temperature-dependent x<missing VAR>-raymagnetic circular dichroism (XMCD) experiments on a La1-xSrx<missing VAR>MnO3(LSMO, x<missing VAR>0.4) thin film, whose thickness (8 ML) is close to the boundarybetween the FM<missing VAR>-metallic and the PM<missing VAR>-insulating phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Temperature evolution of magnetic phases near the thickness-dependent metal-insulator transition in La$_{1-x}$Sr$_x$MnO$_3$ thin films observed by XMCD|Goro Shibata,Kohei Yoshimatsu,Enju Sakai,Keisuke Ishigami,Shoya Sakamoto,Yosuke Nonaka,Fan-Hsiu Chang,Hong-Ji Lin,Di-Jing Huang,Chien-Te Chen,Hiroshi Kumigashira,Atsushi Fujimori###
(1211949, 1211949)
 In order toinvestigate how the magnetic phases evolve near the paramagnetic (PM)-to-FM<missing VAR>phase transition boundary, we have performed temperature-dependent x<missing VAR>-raymagnetic circular dichroism (XMCD) experiments on a La1-xSrx<missing VAR>MnO3(LSMO, x<missing VAR>0.4) thin film, whose thickness (8 ML) is close to the boundarybetween the FM<missing VAR>-metallic and the PM<missing VAR>-insulating phases.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Temperature evolution of magnetic phases near the thickness-dependent metal-insulator transition in La$_{1-x}$Sr$_x$MnO$_3$ thin films observed by XMCD|Goro Shibata,Kohei Yoshimatsu,Enju Sakai,Keisuke Ishigami,Shoya Sakamoto,Yosuke Nonaka,Fan-Hsiu Chang,Hong-Ji Lin,Di-Jing Huang,Chien-Te Chen,Hiroshi Kumigashira,Atsushi Fujimori###
(1211987, 1211987)
 In order toinvestigate how the magnetic phases evolve near the paramagnetic (PM)-to-FM<missing VAR>phase transition boundary, we have performed temperature-dependent x<missing VAR>-raymagnetic circular dichroism (XMCD) experiments on a La1-xSrx<missing VAR>MnO3(LSMO, x<missing VAR>0.4) thin film, whose thickness (8 ML) is close to the boundarybetween the FM<missing VAR>-metallic and the PM<missing VAR>-insulating phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Temperature evolution of magnetic phases near the thickness-dependent metal-insulator transition in La$_{1-x}$Sr$_x$MnO$_3$ thin films observed by XMCD|Goro Shibata,Kohei Yoshimatsu,Enju Sakai,Keisuke Ishigami,Shoya Sakamoto,Yosuke Nonaka,Fan-Hsiu Chang,Hong-Ji Lin,Di-Jing Huang,Chien-Te Chen,Hiroshi Kumigashira,Atsushi Fujimori###
(1211996, 1211996)
 In order toinvestigate how the magnetic phases evolve near the paramagnetic (PM)-to-FM<missing VAR>phase transition boundary, we have performed temperature-dependent x<missing VAR>-raymagnetic circular dichroism (XMCD) experiments on a La1-xSrx<missing VAR>MnO3(LSMO, x<missing VAR>0.4) thin film, whose thickness (8 ML) is close to the boundarybetween the FM<missing VAR>-metallic and the PM<missing VAR>-insulating phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Temperature evolution of magnetic phases near the thickness-dependent metal-insulator transition in La$_{1-x}$Sr$_x$MnO$_3$ thin films observed by XMCD|Goro Shibata,Kohei Yoshimatsu,Enju Sakai,Keisuke Ishigami,Shoya Sakamoto,Yosuke Nonaka,Fan-Hsiu Chang,Hong-Ji Lin,Di-Jing Huang,Chien-Te Chen,Hiroshi Kumigashira,Atsushi Fujimori###
(1212019, 1212019)
 By utilizing theelement-selectiveness of XMCD<missing VAR>, we have quantitatively estimated the fractionsof the PM<missing VAR> and superparamagnetic (SPM) phases as well as the FM<missing VAR> one as afunction of temperature.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Temperature evolution of magnetic phases near the thickness-dependent metal-insulator transition in La$_{1-x}$Sr$_x$MnO$_3$ thin films observed by XMCD|Goro Shibata,Kohei Yoshimatsu,Enju Sakai,Keisuke Ishigami,Shoya Sakamoto,Yosuke Nonaka,Fan-Hsiu Chang,Hong-Ji Lin,Di-Jing Huang,Chien-Te Chen,Hiroshi Kumigashira,Atsushi Fujimori###
(1212040, 1212040)
 By utilizing theelement-selectiveness of XMCD<missing VAR>, we have quantitatively estimated the fractionsof the PM<missing VAR> and superparamagnetic (SPM) phases as well as the FM<missing VAR> one as afunction of temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SP
###Temperature evolution of magnetic phases near the thickness-dependent metal-insulator transition in La$_{1-x}$Sr$_x$MnO$_3$ thin films observed by XMCD|Goro Shibata,Kohei Yoshimatsu,Enju Sakai,Keisuke Ishigami,Shoya Sakamoto,Yosuke Nonaka,Fan-Hsiu Chang,Hong-Ji Lin,Di-Jing Huang,Chien-Te Chen,Hiroshi Kumigashira,Atsushi Fujimori###
(1212048, 1212049)
 By utilizing theelement-selectiveness of XMCD<missing VAR>, we have quantitatively estimated the fractionsof the PM<missing VAR> and superparamagnetic (SPM) phases as well as the FM<missing VAR> one as afunction of temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Temperature evolution of magnetic phases near the thickness-dependent metal-insulator transition in La$_{1-x}$Sr$_x$MnO$_3$ thin films observed by XMCD|Goro Shibata,Kohei Yoshimatsu,Enju Sakai,Keisuke Ishigami,Shoya Sakamoto,Yosuke Nonaka,Fan-Hsiu Chang,Hong-Ji Lin,Di-Jing Huang,Chien-Te Chen,Hiroshi Kumigashira,Atsushi Fujimori###
(1212063, 1212063)
 By utilizing theelement-selectiveness of XMCD<missing VAR>, we have quantitatively estimated the fractionsof the PM<missing VAR> and superparamagnetic (SPM) phases as well as the FM<missing VAR> one as afunction of temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Spin transport in a lateral spin valve with a suspended Cu channel|Kenjiro Matsuki,Ryo Ohshima,Livio Leiva,Yuichiro Ando,Teruya Shinjo,Toshiyuki Tsuchiya,Masashi Shiraishi###
(1212444, 1212444)
Spin transport in a lateral spin valve with a suspended Cu channel.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 340, 'nm', 3]

Cu
###Spin transport in a lateral spin valve with a suspended Cu channel|Kenjiro Matsuki,Ryo Ohshima,Livio Leiva,Yuichiro Ando,Teruya Shinjo,Toshiyuki Tsuchiya,Masashi Shiraishi###
(1212463, 1212463)
 We study spin transport through a suspended Cu channel by an electricalnon-local 4-terminal measurement for future spin mechanics applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 340, 'nm', 2]

Cu
###Spin transport in a lateral spin valve with a suspended Cu channel|Kenjiro Matsuki,Ryo Ohshima,Livio Leiva,Yuichiro Ando,Teruya Shinjo,Toshiyuki Tsuchiya,Masashi Shiraishi###
(1212514, 1212514)
 Amagnetoresistance due to spin transport through the suspended Cu channel isobserved, and its magnitude is comparable to that of a conventional fixed Culateral spin valve.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 340, 'nm', 1]

Cu
###Spin transport in a lateral spin valve with a suspended Cu channel|Kenjiro Matsuki,Ryo Ohshima,Livio Leiva,Yuichiro Ando,Teruya Shinjo,Toshiyuki Tsuchiya,Masashi Shiraishi###
(1212546, 1212546)
 Amagnetoresistance due to spin transport through the suspended Cu channel isobserved, and its magnitude is comparable to that of a conventional fixed Culateral spin valve.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 340, 'nm', 1]

Cu
###Spin transport in a lateral spin valve with a suspended Cu channel|Kenjiro Matsuki,Ryo Ohshima,Livio Leiva,Yuichiro Ando,Teruya Shinjo,Toshiyuki Tsuchiya,Masashi Shiraishi###
(1212570, 1212570)
 The spin diffusion length in the suspended Cu channel isestimated to be 340 nm at room temperature from the spin signal dependence onthe distance between the ferromagnetic injector and detector electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 340, 'nm', 0]

Cu
###Spin transport in a lateral spin valve with a suspended Cu channel|Kenjiro Matsuki,Ryo Ohshima,Livio Leiva,Yuichiro Ando,Teruya Shinjo,Toshiyuki Tsuchiya,Masashi Shiraishi###
(1212647, 1212647)
 Thisvalue is found to be slightly shorter than in a fixed Cu.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 340, 'nm', 1]

Cu
###Spin transport in a lateral spin valve with a suspended Cu channel|Kenjiro Matsuki,Ryo Ohshima,Livio Leiva,Yuichiro Ando,Teruya Shinjo,Toshiyuki Tsuchiya,Masashi Shiraishi###
(1212671, 1212671)
 The decrease in thespin diffusion length in the suspended Cu channel is attributed to an increasein spin scattering originating from naturally oxidized Cu at the bottom of theCu channel.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 340, 'nm', 2]

Cu
###Spin transport in a lateral spin valve with a suspended Cu channel|Kenjiro Matsuki,Ryo Ohshima,Livio Leiva,Yuichiro Ando,Teruya Shinjo,Toshiyuki Tsuchiya,Masashi Shiraishi###
(1212700, 1212700)
 The decrease in thespin diffusion length in the suspended Cu channel is attributed to an increasein spin scattering originating from naturally oxidized Cu at the bottom of theCu channel.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 340, 'nm', 2]

Cu
###Spin transport in a lateral spin valve with a suspended Cu channel|Kenjiro Matsuki,Ryo Ohshima,Livio Leiva,Yuichiro Ando,Teruya Shinjo,Toshiyuki Tsuchiya,Masashi Shiraishi###
(1212713, 1212713)
 The decrease in thespin diffusion length in the suspended Cu channel is attributed to an increasein spin scattering originating from naturally oxidized Cu at the bottom of theCu channel.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 340, 'nm', 2]

CeTe3
###Quantum oscillations with magnetic hysteresis observed in CeTe$_{3}$ thin films|Mori Watanabe,Sanghyun Lee,Takuya Asano,Takashi Ibe,Masashi Tokuda,Hiroki Taniguchi,Daichi Ueta,Yoshinori Okada,Kensuke Kobayashi,Yasuhiro Niimi###
(1212740, 1212742)
Quantum oscillations with magnetic hysteresis observed in CeTe3 thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CeTe3
###Quantum oscillations with magnetic hysteresis observed in CeTe$_{3}$ thin films|Mori Watanabe,Sanghyun Lee,Takuya Asano,Takashi Ibe,Masashi Tokuda,Hiroki Taniguchi,Daichi Ueta,Yoshinori Okada,Kensuke Kobayashi,Yasuhiro Niimi###
(1212761, 1212763)
 We have performed magnetotransport measurements in CeTe3 thin films downto 0.2rm K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Quantum oscillations with magnetic hysteresis observed in CeTe$_{3}$ thin films|Mori Watanabe,Sanghyun Lee,Takuya Asano,Takashi Ibe,Masashi Tokuda,Hiroki Taniguchi,Daichi Ueta,Yoshinori Okada,Kensuke Kobayashi,Yasuhiro Niimi###
(1212777, 1212777)
 We have performed magnetotransport measurements in CeTe3 thin films downto 0.2rm K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CeTe3
###Quantum oscillations with magnetic hysteresis observed in CeTe$_{3}$ thin films|Mori Watanabe,Sanghyun Lee,Takuya Asano,Takashi Ibe,Masashi Tokuda,Hiroki Taniguchi,Daichi Ueta,Yoshinori Okada,Kensuke Kobayashi,Yasuhiro Niimi###
(1212788, 1212790)
 It is known that CeTe3 has two magnetic transitions atT<missing VAR>rm N1 approx 3rm K and T<missing VAR>rm N2 approx 1rm K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N1
###Quantum oscillations with magnetic hysteresis observed in CeTe$_{3}$ thin films|Mori Watanabe,Sanghyun Lee,Takuya Asano,Takashi Ibe,Masashi Tokuda,Hiroki Taniguchi,Daichi Ueta,Yoshinori Okada,Kensuke Kobayashi,Yasuhiro Niimi###
(1212806, 1212807)
 It is known that CeTe3 has two magnetic transitions atT<missing VAR>rm N1 approx 3rm K and T<missing VAR>rm N2 approx 1rm K.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Quantum oscillations with magnetic hysteresis observed in CeTe$_{3}$ thin films|Mori Watanabe,Sanghyun Lee,Takuya Asano,Takashi Ibe,Masashi Tokuda,Hiroki Taniguchi,Daichi Ueta,Yoshinori Okada,Kensuke Kobayashi,Yasuhiro Niimi###
(1212814, 1212814)
 It is known that CeTe3 has two magnetic transitions atT<missing VAR>rm N1 approx 3rm K and T<missing VAR>rm N2 approx 1rm K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N2
###Quantum oscillations with magnetic hysteresis observed in CeTe$_{3}$ thin films|Mori Watanabe,Sanghyun Lee,Takuya Asano,Takashi Ibe,Masashi Tokuda,Hiroki Taniguchi,Daichi Ueta,Yoshinori Okada,Kensuke Kobayashi,Yasuhiro Niimi###
(1212821, 1212822)
 It is known that CeTe3 has two magnetic transitions atT<missing VAR>rm N1 approx 3rm K and T<missing VAR>rm N2 approx 1rm K.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Quantum oscillations with magnetic hysteresis observed in CeTe$_{3}$ thin films|Mori Watanabe,Sanghyun Lee,Takuya Asano,Takashi Ibe,Masashi Tokuda,Hiroki Taniguchi,Daichi Ueta,Yoshinori Okada,Kensuke Kobayashi,Yasuhiro Niimi###
(1212829, 1212829)
 It is known that CeTe3 has two magnetic transitions atT<missing VAR>rm N1 approx 3rm K and T<missing VAR>rm N2 approx 1rm K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Quantum oscillations with magnetic hysteresis observed in CeTe$_{3}$ thin films|Mori Watanabe,Sanghyun Lee,Takuya Asano,Takashi Ibe,Masashi Tokuda,Hiroki Taniguchi,Daichi Ueta,Yoshinori Okada,Kensuke Kobayashi,Yasuhiro Niimi###
(1212845, 1212845)
 A clearShubnikov-de-Haas (SdH) oscillation was observed at 4rm K, demonstratingthe strong two-dimensional nature in this material.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Quantum oscillations with magnetic hysteresis observed in CeTe$_{3}$ thin films|Mori Watanabe,Sanghyun Lee,Takuya Asano,Takashi Ibe,Masashi Tokuda,Hiroki Taniguchi,Daichi Ueta,Yoshinori Okada,Kensuke Kobayashi,Yasuhiro Niimi###
(1212859, 1212859)
 A clearShubnikov-de-Haas (SdH) oscillation was observed at 4rm K, demonstratingthe strong two-dimensional nature in this material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N2
###Quantum oscillations with magnetic hysteresis observed in CeTe$_{3}$ thin films|Mori Watanabe,Sanghyun Lee,Takuya Asano,Takashi Ibe,Masashi Tokuda,Hiroki Taniguchi,Daichi Ueta,Yoshinori Okada,Kensuke Kobayashi,Yasuhiro Niimi###
(1212887, 1212888)
 Below T<missing VAR>rm N2, the SdHoscillation has two frequencies, indicating that the Fermi surface could beslightly modulated due to the second magnetic transition.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Quantum oscillations with magnetic hysteresis observed in CeTe$_{3}$ thin films|Mori Watanabe,Sanghyun Lee,Takuya Asano,Takashi Ibe,Masashi Tokuda,Hiroki Taniguchi,Daichi Ueta,Yoshinori Okada,Kensuke Kobayashi,Yasuhiro Niimi###
(1212894, 1212894)
 Below T<missing VAR>rm N2, the SdHoscillation has two frequencies, indicating that the Fermi surface could beslightly modulated due to the second magnetic transition.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Quantum oscillations with magnetic hysteresis observed in CeTe$_{3}$ thin films|Mori Watanabe,Sanghyun Lee,Takuya Asano,Takashi Ibe,Masashi Tokuda,Hiroki Taniguchi,Daichi Ueta,Yoshinori Okada,Kensuke Kobayashi,Yasuhiro Niimi###
(1212956, 1212956)
 We also observed amagnetic hysteresis in the SdH oscillation below T<missing VAR>rm N1.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N1
###Quantum oscillations with magnetic hysteresis observed in CeTe$_{3}$ thin films|Mori Watanabe,Sanghyun Lee,Takuya Asano,Takashi Ibe,Masashi Tokuda,Hiroki Taniguchi,Daichi Ueta,Yoshinori Okada,Kensuke Kobayashi,Yasuhiro Niimi###
(1212965, 1212966)
 We also observed amagnetic hysteresis in the SdH oscillation below T<missing VAR>rm N1.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Quantum oscillations with magnetic hysteresis observed in CeTe$_{3}$ thin films|Mori Watanabe,Sanghyun Lee,Takuya Asano,Takashi Ibe,Masashi Tokuda,Hiroki Taniguchi,Daichi Ueta,Yoshinori Okada,Kensuke Kobayashi,Yasuhiro Niimi###
(1212991, 1212991)
 Especially,there is a unique spike in the magnetoresistance at B approx 0.6rm T<missing VAR>only when the magnetic field is swept from a high enough field (more than2rm T) to zero field.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si/SiO2
###Extraction of Isotropic Electron-Nuclear Hyperfine Coupling Constants of Paramagnetic Point Defects from Near-Zero Field Magnetoresistance Spectra via Least Squares Fitting to Models Developed from the Stochastic Quantum Liouville Equation|Elias B. Frantz,Nicholas J. Harmon Stephen R. McMillan,Stephen J. Moxim,Michael E. Flatte,Patrick M. Lenahan###
(1213228, 1213232)
 We applied our fitting algorithm to two distinct material systemsSi/SiO2 M<missing VAR>OSFE<missing VAR>Ts, and a-SiH M<missing VAR>IS capacitors.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

OSF
###Extraction of Isotropic Electron-Nuclear Hyperfine Coupling Constants of Paramagnetic Point Defects from Near-Zero Field Magnetoresistance Spectra via Least Squares Fitting to Models Developed from the Stochastic Quantum Liouville Equation|Elias B. Frantz,Nicholas J. Harmon Stephen R. McMillan,Stephen J. Moxim,Michael E. Flatte,Patrick M. Lenahan###
(1213235, 1213237)
 We applied our fitting algorithm to two distinct material systemsSi/SiO2 M<missing VAR>OSFE<missing VAR>Ts, and a-SiH M<missing VAR>IS capacitors.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SiH
###Extraction of Isotropic Electron-Nuclear Hyperfine Coupling Constants of Paramagnetic Point Defects from Near-Zero Field Magnetoresistance Spectra via Least Squares Fitting to Models Developed from the Stochastic Quantum Liouville Equation|Elias B. Frantz,Nicholas J. Harmon Stephen R. McMillan,Stephen J. Moxim,Michael E. Flatte,Patrick M. Lenahan###
(1213246, 1213247)
 We applied our fitting algorithm to two distinct material systemsSi/SiO2 M<missing VAR>OSFE<missing VAR>Ts, and a-SiH M<missing VAR>IS capacitors.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

IS
###Extraction of Isotropic Electron-Nuclear Hyperfine Coupling Constants of Paramagnetic Point Defects from Near-Zero Field Magnetoresistance Spectra via Least Squares Fitting to Models Developed from the Stochastic Quantum Liouville Equation|Elias B. Frantz,Nicholas J. Harmon Stephen R. McMillan,Stephen J. Moxim,Michael E. Flatte,Patrick M. Lenahan###
(1213250, 1213251)
 We applied our fitting algorithm to two distinct material systemsSi/SiO2 M<missing VAR>OSFE<missing VAR>Ts, and a-SiH M<missing VAR>IS capacitors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Extraction of Isotropic Electron-Nuclear Hyperfine Coupling Constants of Paramagnetic Point Defects from Near-Zero Field Magnetoresistance Spectra via Least Squares Fitting to Models Developed from the Stochastic Quantum Liouville Equation|Elias B. Frantz,Nicholas J. Harmon Stephen R. McMillan,Stephen J. Moxim,Michael E. Flatte,Patrick M. Lenahan###
(1213309, 1213309)
 Our work indicates that the NZFMR response and fittingof the NZFMR spectrum via models developed from the stochastic quantumLiouville equation could be a relatively simple yet powerful addition to thefamily of spin-based techniques used to explore the chemical and structuralnature of point defects in semiconductor devices and insulators.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Extraction of Isotropic Electron-Nuclear Hyperfine Coupling Constants of Paramagnetic Point Defects from Near-Zero Field Magnetoresistance Spectra via Least Squares Fitting to Models Developed from the Stochastic Quantum Liouville Equation|Elias B. Frantz,Nicholas J. Harmon Stephen R. McMillan,Stephen J. Moxim,Michael E. Flatte,Patrick M. Lenahan###
(1213326, 1213326)
 Our work indicates that the NZFMR response and fittingof the NZFMR spectrum via models developed from the stochastic quantumLiouville equation could be a relatively simple yet powerful addition to thefamily of spin-based techniques used to explore the chemical and structuralnature of point defects in semiconductor devices and insulators.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(ISOC)
###Quantification of interfacial spin-charge conversion in metal/insulator hybrid structures by generalized boundary conditions|Cristina Sanz-Fernández,Van Tuong Pham,Edurne Sagasta,Luis E. Hueso,Ilya V. Tokatly,Fèlix Casanova,F. Sebastián Bergeret###
(1213513, 1213518)
 We present and verify experimentally a universal theoretical framework forthe description of spin-charge interconversion in non-magnetic metal/insulatorstructures with interfacial spin-orbit coupling (ISOC).
Featurization successful!
0,0,0,0,0,0.25,0,0.25,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ISOC
###Quantification of interfacial spin-charge conversion in metal/insulator hybrid structures by generalized boundary conditions|Cristina Sanz-Fernández,Van Tuong Pham,Edurne Sagasta,Luis E. Hueso,Ilya V. Tokatly,Fèlix Casanova,F. Sebastián Bergeret###
(1213562, 1213565)
 The latter encode the effects of ISOC and relate the electronictransport in such systems to spin loss and spin-charge interconversion at theinterface, which are parameterized, respectively, by G<missing VAR>parallel/perp andsigmarmsc/cs.
Featurization terminated normally.
0,0,0,0,0,0.25,0,0.25,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ISOC
###Quantification of interfacial spin-charge conversion in metal/insulator hybrid structures by generalized boundary conditions|Cristina Sanz-Fernández,Van Tuong Pham,Edurne Sagasta,Luis E. Hueso,Ilya V. Tokatly,Fèlix Casanova,F. Sebastián Bergeret###
(1213682, 1213685)
 We apply our formalism to two typicalspintronic devices that exploit ISOC a lateral spin valve and a multilayerHall bar, for which we calculate the non-local resistance and the spin Hallmagnetoresistance, respectively.
Featurization terminated normally.
0,0,0,0,0,0.25,0,0.25,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BiO
###Quantification of interfacial spin-charge conversion in metal/insulator hybrid structures by generalized boundary conditions|Cristina Sanz-Fernández,Van Tuong Pham,Edurne Sagasta,Luis E. Hueso,Ilya V. Tokatly,Fèlix Casanova,F. Sebastián Bergeret###
(1213760, 1213761)
 Finally, we perform measurements on these twodevices with a BiOx<missing VAR>/Cu interface and verify that transport propertiesrelated to the ISOC are quantified by the same set of interfacial parameters.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Quantification of interfacial spin-charge conversion in metal/insulator hybrid structures by generalized boundary conditions|Cristina Sanz-Fernández,Van Tuong Pham,Edurne Sagasta,Luis E. Hueso,Ilya V. Tokatly,Fèlix Casanova,F. Sebastián Bergeret###
(1213764, 1213764)
 Finally, we perform measurements on these twodevices with a BiOx<missing VAR>/Cu interface and verify that transport propertiesrelated to the ISOC are quantified by the same set of interfacial parameters.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ISOC
###Quantification of interfacial spin-charge conversion in metal/insulator hybrid structures by generalized boundary conditions|Cristina Sanz-Fernández,Van Tuong Pham,Edurne Sagasta,Luis E. Hueso,Ilya V. Tokatly,Fèlix Casanova,F. Sebastián Bergeret###
(1213785, 1213788)
 Finally, we perform measurements on these twodevices with a BiOx<missing VAR>/Cu interface and verify that transport propertiesrelated to the ISOC are quantified by the same set of interfacial parameters.
Featurization terminated normally.
0,0,0,0,0,0.25,0,0.25,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###From Weak Antilocalization to Kondo Scattering in a Magnetic Complex Oxide Interface|Xinxin Cai,Jin Yue,Peng Xu,Bharat Jalan,Vlad S. Pribiag###
(1213992, 1213992)
 Here we uselow-temperature magnetotransport measurements to reveal a transition from weakantilocalization (WAL) to Kondo scattering in the quasi-two-dimensionalelectron gas formed at the interface between SrTiO3 and the Mott insulatorNdTiO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###From Weak Antilocalization to Kondo Scattering in a Magnetic Complex Oxide Interface|Xinxin Cai,Jin Yue,Peng Xu,Bharat Jalan,Vlad S. Pribiag###
(1214028, 1214031)
 Here we uselow-temperature magnetotransport measurements to reveal a transition from weakantilocalization (WAL) to Kondo scattering in the quasi-two-dimensionalelectron gas formed at the interface between SrTiO3 and the Mott insulatorNdTiO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NdTiO3
###From Weak Antilocalization to Kondo Scattering in a Magnetic Complex Oxide Interface|Xinxin Cai,Jin Yue,Peng Xu,Bharat Jalan,Vlad S. Pribiag###
(1214042, 1214045)
 Here we uselow-temperature magnetotransport measurements to reveal a transition from weakantilocalization (WAL) to Kondo scattering in the quasi-two-dimensionalelectron gas formed at the interface between SrTiO3 and the Mott insulatorNdTiO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NdTiO3
###From Weak Antilocalization to Kondo Scattering in a Magnetic Complex Oxide Interface|Xinxin Cai,Jin Yue,Peng Xu,Bharat Jalan,Vlad S. Pribiag###
(1214064, 1214067)
 This transition occurs as the thickness of the NdTiO3 layer isincreased.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###From Weak Antilocalization to Kondo Scattering in a Magnetic Complex Oxide Interface|Xinxin Cai,Jin Yue,Peng Xu,Bharat Jalan,Vlad S. Pribiag###
(1214089, 1214089)
 Analysis of the Kondo scattering and WAL<missing VAR> points to the presence ofatomic-scale magnetic impurities coexisting with extended magnetic regions thataffect transport via a strong magnetic exchange interaction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Tensor monopoles and negative magnetoresistance effect in optical lattices|Hai-Tao Ding,Yan-Qing Zhu,Zhi Li,Lubing Shao###
(1214399, 1214399)
 Using the semiclassical Boltzmann equation,we calculate the longitudinal resistance against the magnetic field B andfind the negative relative magnetoresistance effect of approximately  -B2 dependence when a hyperplane cuts through the tensor monopoles in the parameterspace.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 4, 'D', 1],[93.0, 3, 'D', 1]

B2
###Tensor monopoles and negative magnetoresistance effect in optical lattices|Hai-Tao Ding,Yan-Qing Zhu,Zhi Li,Lubing Shao###
(1214422, 1214423)
 Using the semiclassical Boltzmann equation,we calculate the longitudinal resistance against the magnetic field B andfind the negative relative magnetoresistance effect of approximately  -B2 dependence when a hyperplane cuts through the tensor monopoles in the parameterspace.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 4, 'D', 1],[69.0, 3, 'D', 1]

SO
###Ultrahigh efficient spin-orbit torque magnetization switching in all-sputtered topological insulator - ferromagnet multilayers|Tuo Fan,Nguyen Huynh Duy Khang,Soichiro Nakano,Pham Nam Hai###
(1214595, 1214596)
 Spin-orbit torque (SOT) magnetization switching of ferromagnets with largeperpendicular magnetic anisotropy has a great potential for the next-generationnon-volatile magnetoresistive random-access memory (MRAM).
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[241.0, 12.3, 'and', 3]

In
###Ultrahigh efficient spin-orbit torque magnetization switching in all-sputtered topological insulator - ferromagnet multilayers|Tuo Fan,Nguyen Huynh Duy Khang,Soichiro Nakano,Pham Nam Hai###
(1214717, 1214717)
 In this work, we demonstrate ultrahigh efficient and robust SOT<missing VAR>magnetization switching in all-sputtered BiSb topological insulator -perpendicularly magnetized Co/Pt multilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 12.3, 'and', 1]

SO
###Ultrahigh efficient spin-orbit torque magnetization switching in all-sputtered topological insulator - ferromagnet multilayers|Tuo Fan,Nguyen Huynh Duy Khang,Soichiro Nakano,Pham Nam Hai###
(1214736, 1214737)
 In this work, we demonstrate ultrahigh efficient and robust SOT<missing VAR>magnetization switching in all-sputtered BiSb topological insulator -perpendicularly magnetized Co/Pt multilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 12.3, 'and', 1]

BiSb
###Ultrahigh efficient spin-orbit torque magnetization switching in all-sputtered topological insulator - ferromagnet multilayers|Tuo Fan,Nguyen Huynh Duy Khang,Soichiro Nakano,Pham Nam Hai###
(1214751, 1214752)
 In this work, we demonstrate ultrahigh efficient and robust SOT<missing VAR>magnetization switching in all-sputtered BiSb topological insulator -perpendicularly magnetized Co/Pt multilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 12.3, 'and', 1]

Co/Pt
###Ultrahigh efficient spin-orbit torque magnetization switching in all-sputtered topological insulator - ferromagnet multilayers|Tuo Fan,Nguyen Huynh Duy Khang,Soichiro Nakano,Pham Nam Hai###
(1214765, 1214767)
 In this work, we demonstrate ultrahigh efficient and robust SOT<missing VAR>magnetization switching in all-sputtered BiSb topological insulator -perpendicularly magnetized Co/Pt multilayers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[70.0, 12.3, 'and', 1]

BiSb
###Ultrahigh efficient spin-orbit torque magnetization switching in all-sputtered topological insulator - ferromagnet multilayers|Tuo Fan,Nguyen Huynh Duy Khang,Soichiro Nakano,Pham Nam Hai###
(1214814, 1214815)
 Despite fabricated by theindustry-friendly magnetron sputtering instead of the laboratory molecular beamepitaxy, the topological insulator layer, BiSb, shows a large spin Hall angleof thetaSH  12.3 and high electrical conductivity of sigma 1.5x<missing VAR>105 Omega-1m<missing VAR>-1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 12.3, 'and', 0]

SH
###Ultrahigh efficient spin-orbit torque magnetization switching in all-sputtered topological insulator - ferromagnet multilayers|Tuo Fan,Nguyen Huynh Duy Khang,Soichiro Nakano,Pham Nam Hai###
(1214834, 1214835)
 Despite fabricated by theindustry-friendly magnetron sputtering instead of the laboratory molecular beamepitaxy, the topological insulator layer, BiSb, shows a large spin Hall angleof thetaSH  12.3 and high electrical conductivity of sigma 1.5x<missing VAR>105 Omega-1m<missing VAR>-1.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 12.3, 'and', 0]

BiSb
###Ultrahigh efficient spin-orbit torque magnetization switching in all-sputtered topological insulator - ferromagnet multilayers|Tuo Fan,Nguyen Huynh Duy Khang,Soichiro Nakano,Pham Nam Hai###
(1214881, 1214882)
 Our results demonstrate the mass productioncapability of BiSb topological insulator for implementation of ultralow powerSOT-MRAM<missing VAR> and other SOT<missing VAR>-based spintronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 12.3, 'and', 1]

SO
###Ultrahigh efficient spin-orbit torque magnetization switching in all-sputtered topological insulator - ferromagnet multilayers|Tuo Fan,Nguyen Huynh Duy Khang,Soichiro Nakano,Pham Nam Hai###
(1214899, 1214900)
 Our results demonstrate the mass productioncapability of BiSb topological insulator for implementation of ultralow powerSOT-MRAM<missing VAR> and other SOT<missing VAR>-based spintronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 12.3, 'and', 1]

SO
###Ultrahigh efficient spin-orbit torque magnetization switching in all-sputtered topological insulator - ferromagnet multilayers|Tuo Fan,Nguyen Huynh Duy Khang,Soichiro Nakano,Pham Nam Hai###
(1214912, 1214913)
 Our results demonstrate the mass productioncapability of BiSb topological insulator for implementation of ultralow powerSOT-MRAM<missing VAR> and other SOT<missing VAR>-based spintronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 12.3, 'and', 1]

GaAs
###Viscosity of two-dimensional electrons|P. S. Alekseev,A. P. Dmitriev###
(1215186, 1215187)
 We compare thecalculated viscosity of the 2D electron Fermi gas and the previously knownviscosity of a 2D Fermi liquid with available experimental data extracted fromthe hydrodynamic negative magnetoresistance of the best-quality GaAs quantumwells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 2, 'D', 2],[57.0, 2, 'D', 0],[35.0, 2, 'D', 0]

Bi
###Investigation of in-plane anisotropy of c-axis magnetoresistance for BiCh2-based layered superconductor NdO0.7F0.3BiS2|Kazuhisa Hoshi,Kenta Sudo,Yosuke Goto,Motoi Kimata,Yoshikazu Mizuguchi###
(1215287, 1215287)
Investigation of in-plane anisotropy of c<missing VAR>-axis magnetoresistance for BiCh2-based layered superconductor NdO0.7F0.3BiS2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NdO0.7F0.3BiS2
###Investigation of in-plane anisotropy of c-axis magnetoresistance for BiCh2-based layered superconductor NdO0.7F0.3BiS2|Kazuhisa Hoshi,Kenta Sudo,Yosuke Goto,Motoi Kimata,Yoshikazu Mizuguchi###
(1215297, 1215304)
Investigation of in-plane anisotropy of c<missing VAR>-axis magnetoresistance for BiCh2-based layered superconductor NdO0.7F0.3BiS2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.13999999999999999,0.06,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NdO0.7F0.3BiS2
###Investigation of in-plane anisotropy of c-axis magnetoresistance for BiCh2-based layered superconductor NdO0.7F0.3BiS2|Kazuhisa Hoshi,Kenta Sudo,Yosuke Goto,Motoi Kimata,Yoshikazu Mizuguchi###
(1215358, 1215365)
 We have investigated the in-plane anisotropy of the c<missing VAR>-axis magnetoresistance(MR) in both superconducting and normal states of single crystals ofNdO0.7F0.3BiS2 under in-plane magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0.13999999999999999,0.06,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Investigation of in-plane anisotropy of c-axis magnetoresistance for BiCh2-based layered superconductor NdO0.7F0.3BiS2|Kazuhisa Hoshi,Kenta Sudo,Yosuke Goto,Motoi Kimata,Yoshikazu Mizuguchi###
(1215378, 1215378)
 In the superconducting states ofNdO0.7F0.3BiS2, four-fold-symmetric in-plane anisotropy of the c<missing VAR>-axis MR wasobserved below the superconducting transition temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NdO0.7F0.3BiS2
###Investigation of in-plane anisotropy of c-axis magnetoresistance for BiCh2-based layered superconductor NdO0.7F0.3BiS2|Kazuhisa Hoshi,Kenta Sudo,Yosuke Goto,Motoi Kimata,Yoshikazu Mizuguchi###
(1215389, 1215396)
 In the superconducting states ofNdO0.7F0.3BiS2, four-fold-symmetric in-plane anisotropy of the c<missing VAR>-axis MR wasobserved below the superconducting transition temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0.13999999999999999,0.06,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NdO0.7F0.3BiS2
###Investigation of in-plane anisotropy of c-axis magnetoresistance for BiCh2-based layered superconductor NdO0.7F0.3BiS2|Kazuhisa Hoshi,Kenta Sudo,Yosuke Goto,Motoi Kimata,Yoshikazu Mizuguchi###
(1215449, 1215456)
 Since the crystalstructure of NdO0.7F0.3BiS2 is tetragonal, the rotational symmetry in thesuperconducting state is preserved in the present compound.
Featurization terminated normally.
0,0,0,0,0,0,0,0.13999999999999999,0.06,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaO0.5F0.5BiSSe
###Investigation of in-plane anisotropy of c-axis magnetoresistance for BiCh2-based layered superconductor NdO0.7F0.3BiS2|Kazuhisa Hoshi,Kenta Sudo,Yosuke Goto,Motoi Kimata,Yoshikazu Mizuguchi###
(1215514, 1215521)
 This result isclearly different from the previous report observed in LaO0.5F0.5BiSSe singlecrystals, where the in-plane MR in the superconducting state shows two-foldsymmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0.1,0.1,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NdO0.7F0.3BiS2
###Investigation of in-plane anisotropy of c-axis magnetoresistance for BiCh2-based layered superconductor NdO0.7F0.3BiS2|Kazuhisa Hoshi,Kenta Sudo,Yosuke Goto,Motoi Kimata,Yoshikazu Mizuguchi###
(1215577, 1215584)
 On the other hand, in the normal states of NdO0.7F0.3BiS2, two-foldsymmetric MR with a small amplitude was observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0.13999999999999999,0.06,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi
###Investigation of in-plane anisotropy of c-axis magnetoresistance for BiCh2-based layered superconductor NdO0.7F0.3BiS2|Kazuhisa Hoshi,Kenta Sudo,Yosuke Goto,Motoi Kimata,Yoshikazu Mizuguchi###
(1215658, 1215658)
 The possible origin of thetwo-fold-symmetric behavior was discussed with the presence of local structuraldisorder in the conducting plane of BiCh2-based compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe3Se4
###Fe3Se4: A Possible Ferrimagnetic Half-Metal?|Girish C. Tewari,Divya Srivastava,Reijo Pohjonen,Otto Mustonen,Antti J. Karttunen,Johan Lindén,Maarit Karppinen###
(1215675, 1215678)
Fe3Se4 A Possible Ferrimagnetic Half-Metal?
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 100, '%', 1],[243.0, 100, 'K', 5],[268.0, 100, 'K', 6]

Fe3Se4
###Fe3Se4: A Possible Ferrimagnetic Half-Metal?|Girish C. Tewari,Divya Srivastava,Reijo Pohjonen,Otto Mustonen,Antti J. Karttunen,Johan Lindén,Maarit Karppinen###
(1215806, 1215809)
 Here wepresent results of electronic band structure calculations based on densityfunctional theory and extensive physical-property measurements for Fe3Se4revealing signatures of half-metallicity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 100, '%', 2],[112.0, 100, 'K', 2],[137.0, 100, 'K', 3]

Fe3Se4
###Fe3Se4: A Possible Ferrimagnetic Half-Metal?|Girish C. Tewari,Divya Srivastava,Reijo Pohjonen,Otto Mustonen,Antti J. Karttunen,Johan Lindén,Maarit Karppinen###
(1215848, 1215851)
 The spin-polarized electronic bandstructure calculations predict half-metallic ferrimagnetism for Fe3Se4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 100, '%', 3],[70.0, 100, 'K', 1],[95.0, 100, 'K', 2]

C
###Terahertz spectroscopy evidence of possible 40 K superconductivity in rhenium-doped strontium ruthenates|Yurii Aleshchenko,Boris Gorshunov,Elena Zhukova,Andrey Muratov,Alexander Dudka,Rajendra Dulal,Serafim Teknowijoyo,Sara Chahid,Vahan Nikoghosyan,Armen Gulian###
(1216150, 1216150)
 The main experimental evidence arises from terahertz spectroscopy of thismaterial followed by AC and D<missing VAR>C magnetization, as well as measurements of itsheat capacity and magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[159.0, 40, 'K', 3],[61.0, 40, 'K', 1]

C
###Terahertz spectroscopy evidence of possible 40 K superconductivity in rhenium-doped strontium ruthenates|Yurii Aleshchenko,Boris Gorshunov,Elena Zhukova,Andrey Muratov,Alexander Dudka,Rajendra Dulal,Serafim Teknowijoyo,Sara Chahid,Vahan Nikoghosyan,Armen Gulian###
(1216155, 1216155)
 The main experimental evidence arises from terahertz spectroscopy of thismaterial followed by AC and D<missing VAR>C magnetization, as well as measurements of itsheat capacity and magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 40, 'K', 3],[66.0, 40, 'K', 1]

Eu5In2Sb6
###Colossal magnetoresistance in a nonsymmorphic antiferromagnetic insulator|P. F. S. Rosa,Yuanfeng Xu,S. K. Kushwaha,J. C. Souza,M. C. Rahn,L. S. I. Veiga,A. Bombardi,S. M. Thomas,M. Janoschek,E. D. Bauer,M. K. Chan,Zhijun Wang,J. D. Thompson,P. G. Pagliuso,N. Harrison,B. A. Bernevig,F. Ronning###
(1216307, 1216312)
 Here we investigate antiferromagnetic Eu5In2Sb6, anonsymmorphic Zintl phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15384615384615385,0,0.46153846153846156,0,0,0,0,0,0,0,0,0,0,0,0.38461538461538464,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Eu5In2Sb6
###Colossal magnetoresistance in a nonsymmorphic antiferromagnetic insulator|P. F. S. Rosa,Yuanfeng Xu,S. K. Kushwaha,J. C. Souza,M. C. Rahn,L. S. I. Veiga,A. Bombardi,S. M. Thomas,M. Janoschek,E. D. Bauer,M. K. Chan,Zhijun Wang,J. D. Thompson,P. G. Pagliuso,N. Harrison,B. A. Bernevig,F. Ronning###
(1216338, 1216343)
 Our electrical transport data show thatEu5In2Sb6 is remarkably insulating and exhibits an exceptionallylarge negative magnetoresistance, which is consistent with the presence ofmagnetic polarons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15384615384615385,0,0.46153846153846156,0,0,0,0,0,0,0,0,0,0,0,0.38461538461538464,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Eu5In2Sb6
###Colossal magnetoresistance in a nonsymmorphic antiferromagnetic insulator|P. F. S. Rosa,Yuanfeng Xu,S. K. Kushwaha,J. C. Souza,M. C. Rahn,L. S. I. Veiga,A. Bombardi,S. M. Thomas,M. Janoschek,E. D. Bauer,M. K. Chan,Zhijun Wang,J. D. Thompson,P. G. Pagliuso,N. Harrison,B. A. Bernevig,F. Ronning###
(1216407, 1216412)
 From it ab initio calculations, the paramagnetic state ofEu5In2Sb6 is a topologically nontrivial semimetal within thegeneralized gradient approximation (GGA), whereas an insulating state withtrivial topological indices is obtained using a modified Becke-Johnsonpotential.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15384615384615385,0,0.46153846153846156,0,0,0,0,0,0,0,0,0,0,0,0.38461538461538464,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

U
###Colossal magnetoresistance in a nonsymmorphic antiferromagnetic insulator|P. F. S. Rosa,Yuanfeng Xu,S. K. Kushwaha,J. C. Souza,M. C. Rahn,L. S. I. Veiga,A. Bombardi,S. M. Thomas,M. Janoschek,E. D. Bauer,M. K. Chan,Zhijun Wang,J. D. Thompson,P. G. Pagliuso,N. Harrison,B. A. Bernevig,F. Ronning###
(1216483, 1216483)
 Notably, GGAU calculations suggest that the antiferromagnetic phaseof Eu5In2Sb6 may host an axion insulating state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Eu5In2Sb6
###Colossal magnetoresistance in a nonsymmorphic antiferromagnetic insulator|P. F. S. Rosa,Yuanfeng Xu,S. K. Kushwaha,J. C. Souza,M. C. Rahn,L. S. I. Veiga,A. Bombardi,S. M. Thomas,M. Janoschek,E. D. Bauer,M. K. Chan,Zhijun Wang,J. D. Thompson,P. G. Pagliuso,N. Harrison,B. A. Bernevig,F. Ronning###
(1216500, 1216505)
 Notably, GGAU calculations suggest that the antiferromagnetic phaseof Eu5In2Sb6 may host an axion insulating state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15384615384615385,0,0.46153846153846156,0,0,0,0,0,0,0,0,0,0,0,0.38461538461538464,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuP3
###Field-induced Metal-Insulator Transition in $β$-EuP$_3$|Guangqiang Wang,Guoqing Chang,Huibin Zhou,Wenlong Ma,Hsin Lin,M. Zahid Hasan,Su-Yang Xu,Shuang Jia###
(1216593, 1216595)
Field-induced Metal-Insulator Transition in -EuP3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 2, 'kelvins', 4]

In
###Field-induced Metal-Insulator Transition in $β$-EuP$_3$|Guangqiang Wang,Guoqing Chang,Huibin Zhou,Wenlong Ma,Hsin Lin,M. Zahid Hasan,Su-Yang Xu,Shuang Jia###
(1216687, 1216687)
 In this paper we present the observation of amagnetic-field-driven MIT in a magnetic semiconductor beta -EuP3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 2, 'kelvins', 1]

EuP3
###Field-induced Metal-Insulator Transition in $β$-EuP$_3$|Guangqiang Wang,Guoqing Chang,Huibin Zhou,Wenlong Ma,Hsin Lin,M. Zahid Hasan,Su-Yang Xu,Shuang Jia###
(1216727, 1216729)
 In this paper we present the observation of amagnetic-field-driven MIT in a magnetic semiconductor beta -EuP3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 2, 'kelvins', 1]

C
###Field-induced Metal-Insulator Transition in $β$-EuP$_3$|Guangqiang Wang,Guoqing Chang,Huibin Zhou,Wenlong Ma,Hsin Lin,M. Zahid Hasan,Su-Yang Xu,Shuang Jia###
(1216747, 1216747)
Concomitantly, we found a colossal magnetoresistance (CMR) in an extreme waythe resistance drops billionfold at 2 kelvins in a magnetic field less than 3teslas.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 2, 'kelvins', 0]

Eu2
###Field-induced Metal-Insulator Transition in $β$-EuP$_3$|Guangqiang Wang,Guoqing Chang,Huibin Zhou,Wenlong Ma,Hsin Lin,M. Zahid Hasan,Su-Yang Xu,Shuang Jia###
(1216852, 1216853)
 We ascribe this striking MIT as a field-driven transition from anantiferromagnetic and paramagnetic insulator to a spin-polarized topologicalsemimetal, in which the spin configuration of mathrmEu2 cations andspin-orbital coupling (SOC) play a crucial role.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 2, 'kelvins', 1]

(SOC)
###Field-induced Metal-Insulator Transition in $β$-EuP$_3$|Guangqiang Wang,Guoqing Chang,Huibin Zhou,Wenlong Ma,Hsin Lin,M. Zahid Hasan,Su-Yang Xu,Shuang Jia###
(1216866, 1216870)
 We ascribe this striking MIT as a field-driven transition from anantiferromagnetic and paramagnetic insulator to a spin-polarized topologicalsemimetal, in which the spin configuration of mathrmEu2 cations andspin-orbital coupling (SOC) play a crucial role.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 2, 'kelvins', 1]

As
###Field-induced Metal-Insulator Transition in $β$-EuP$_3$|Guangqiang Wang,Guoqing Chang,Huibin Zhou,Wenlong Ma,Hsin Lin,M. Zahid Hasan,Su-Yang Xu,Shuang Jia###
(1216881, 1216881)
 As a phosphorene-bearingcompound whose electrical properties can be controlled by the application offield, beta -EuP3 may serve as a tantalizing material in the basicresearch and even future electronics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 2, 'kelvins', 2]

EuP3
###Field-induced Metal-Insulator Transition in $β$-EuP$_3$|Guangqiang Wang,Guoqing Chang,Huibin Zhou,Wenlong Ma,Hsin Lin,M. Zahid Hasan,Su-Yang Xu,Shuang Jia###
(1216919, 1216921)
 As a phosphorene-bearingcompound whose electrical properties can be controlled by the application offield, beta -EuP3 may serve as a tantalizing material in the basicresearch and even future electronics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 2, 'kelvins', 2]

WP2
###Evidence for dominant phonon-electron scattering in Weyl semimetal WP$_{2}$|Gavin B. Osterhoudt,Vincent M. Plisson,Yaxian Wang,Christina A. C. Garcia,Johannes Gooth,Claudia Felser,Prineha Narang,Kenneth S. Burch###
(1216979, 1216981)
Evidence for dominant phonon-electron scattering in Weyl semimetal WP2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Evidence for dominant phonon-electron scattering in Weyl semimetal WP$_{2}$|Gavin B. Osterhoudt,Vincent M. Plisson,Yaxian Wang,Christina A. C. Garcia,Johannes Gooth,Claudia Felser,Prineha Narang,Kenneth S. Burch###
(1217086, 1217087)
 Here we revealsignatures of significant phonon-electron scattering in the type-II Weylsemimetal WP2 via temperature-dependent Raman spectroscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WP2
###Evidence for dominant phonon-electron scattering in Weyl semimetal WP$_{2}$|Gavin B. Osterhoudt,Vincent M. Plisson,Yaxian Wang,Christina A. C. Garcia,Johannes Gooth,Claudia Felser,Prineha Narang,Kenneth S. Burch###
(1217094, 1217096)
 Here we revealsignatures of significant phonon-electron scattering in the type-II Weylsemimetal WP2 via temperature-dependent Raman spectroscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Evidence for dominant phonon-electron scattering in Weyl semimetal WP$_{2}$|Gavin B. Osterhoudt,Vincent M. Plisson,Yaxian Wang,Christina A. C. Garcia,Johannes Gooth,Claudia Felser,Prineha Narang,Kenneth S. Burch###
(1217168, 1217168)
 Inconjunction with first-principles calculations, a combined analysis of themomentum, energy, and symmetry-allowed decay paths indicates this results fromintraband scattering of the electrons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La2-xCe
###Strange Metallic Transport in the Antiferromagnetic Regime of Electron Doped Cuprates|Tarapada Sarkar,Nicholas R Poniatowski,Joshua S. Higgins,P. R. Mandal,Mun K Chan,Richard L Greene###
(1217391, 1217395)
 We report magnetoresistance and Hall Effect results for electron-doped filmsof the high-temperature superconductor La2-xCex<missing VAR>CuO4 (L<missing VAR>CCO) fortemperatures from 0.7 to 45 K and magnetic fields up to 65 T.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[19.0, 0.7, 'to', 0],[20.0, 45, 'K', 0],[31.0, 65, 'T', 0],[38.0, 0.12, 'and', 1],[41.0, 0.13, ',', 1],[140.0, 40, 'K', 2],[183.0, 1, ',', 3],[232.0, 50, 'K', 4]

CuO4
###Strange Metallic Transport in the Antiferromagnetic Regime of Electron Doped Cuprates|Tarapada Sarkar,Nicholas R Poniatowski,Joshua S. Higgins,P. R. Mandal,Mun K Chan,Richard L Greene###
(1217397, 1217399)
 We report magnetoresistance and Hall Effect results for electron-doped filmsof the high-temperature superconductor La2-xCex<missing VAR>CuO4 (L<missing VAR>CCO) fortemperatures from 0.7 to 45 K and magnetic fields up to 65 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 0.7, 'to', 0],[16.0, 45, 'K', 0],[27.0, 65, 'T', 0],[34.0, 0.12, 'and', 1],[37.0, 0.13, ',', 1],[136.0, 40, 'K', 2],[179.0, 1, ',', 3],[228.0, 50, 'K', 4]

O
###Strange Metallic Transport in the Antiferromagnetic Regime of Electron Doped Cuprates|Tarapada Sarkar,Nicholas R Poniatowski,Joshua S. Higgins,P. R. Mandal,Mun K Chan,Richard L Greene###
(1217405, 1217405)
 We report magnetoresistance and Hall Effect results for electron-doped filmsof the high-temperature superconductor La2-xCex<missing VAR>CuO4 (L<missing VAR>CCO) fortemperatures from 0.7 to 45 K and magnetic fields up to 65 T.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 0.7, 'to', 0],[10.0, 45, 'K', 0],[21.0, 65, 'T', 0],[28.0, 0.12, 'and', 1],[31.0, 0.13, ',', 1],[130.0, 40, 'K', 2],[173.0, 1, ',', 3],[222.0, 50, 'K', 4]

FS
###Strange Metallic Transport in the Antiferromagnetic Regime of Electron Doped Cuprates|Tarapada Sarkar,Nicholas R Poniatowski,Joshua S. Higgins,P. R. Mandal,Mun K Chan,Richard L Greene###
(1217452, 1217453)
 For x<missing VAR>  0.12 and0.13, just below the Fermi surface reconstruction (FSR), the normal statein-plane resistivity exhibits a well-known upturn at low temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 0.7, 'to', 1],[37.0, 45, 'K', 1],[26.0, 65, 'T', 1],[19.0, 0.12, 'and', 0],[16.0, 0.13, ',', 0],[82.0, 40, 'K', 1],[125.0, 1, ',', 2],[174.0, 50, 'K', 3]

K
###Strange Metallic Transport in the Antiferromagnetic Regime of Electron Doped Cuprates|Tarapada Sarkar,Nicholas R Poniatowski,Joshua S. Higgins,P. R. Mandal,Mun K Chan,Richard L Greene###
(1217544, 1217544)
 Our newresults show that this resistivity upturn is eliminated at high magnetic fieldand the resistivity becomes linear-in-temperature from sim 40 K down to 0.7K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 0.7, 'to', 2],[129.0, 45, 'K', 2],[118.0, 65, 'T', 2],[111.0, 0.12, 'and', 1],[108.0, 0.13, ',', 1],[9.0, 40, 'K', 0],[34.0, 1, ',', 1],[83.0, 50, 'K', 2]

Tc
###Strange Metallic Transport in the Antiferromagnetic Regime of Electron Doped Cuprates|Tarapada Sarkar,Nicholas R Poniatowski,Joshua S. Higgins,P. R. Mandal,Mun K Chan,Richard L Greene###
(1217563, 1217563)
 The magnitude of the linear coefficient scales with Tc and doping, as foundpreviously [1,2] for dopings above the FSR<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 0.7, 'to', 3],[148.0, 45, 'K', 3],[137.0, 65, 'T', 3],[130.0, 0.12, 'and', 2],[127.0, 0.13, ',', 2],[28.0, 40, 'K', 1],[15.0, 1, ',', 0],[64.0, 50, 'K', 1]

FS
###Strange Metallic Transport in the Antiferromagnetic Regime of Electron Doped Cuprates|Tarapada Sarkar,Nicholas R Poniatowski,Joshua S. Higgins,P. R. Mandal,Mun K Chan,Richard L Greene###
(1217591, 1217592)
 The magnitude of the linear coefficient scales with Tc and doping, as foundpreviously [1,2] for dopings above the FSR<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[177.0, 0.7, 'to', 3],[176.0, 45, 'K', 3],[165.0, 65, 'T', 3],[158.0, 0.12, 'and', 2],[155.0, 0.13, ',', 2],[56.0, 40, 'K', 1],[13.0, 1, ',', 0],[35.0, 50, 'K', 1]

In
###Strange Metallic Transport in the Antiferromagnetic Regime of Electron Doped Cuprates|Tarapada Sarkar,Nicholas R Poniatowski,Joshua S. Higgins,P. R. Mandal,Mun K Chan,Richard L Greene###
(1217596, 1217596)
 In addition, the normal state Hallcoefficient has an unconventional field dependence for temperatures below 50K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[182.0, 0.7, 'to', 4],[181.0, 45, 'K', 4],[170.0, 65, 'T', 4],[163.0, 0.12, 'and', 3],[160.0, 0.13, ',', 3],[61.0, 40, 'K', 2],[18.0, 1, ',', 1],[31.0, 50, 'K', 0]

LaTiO3/SrTiO3
###Inhomogeneous superconductivity and quasilinear magnetoresistance at amorphous LaTiO3/SrTiO3 interfaces|N. Lebedev,M. Stehno,A. Rana,N. Gauquelin,J. Verbeeck,A. Brinkman,J. Aarts###
(1217706, 1217714)
Inhomogeneous superconductivity and quasilinear magnetoresistance at amorphous LaTiO3/SrTiO3 interfaces.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[48.0, 2, 'D', 2]

LaTiO3/SrTiO3
###Inhomogeneous superconductivity and quasilinear magnetoresistance at amorphous LaTiO3/SrTiO3 interfaces|N. Lebedev,M. Stehno,A. Rana,N. Gauquelin,J. Verbeeck,A. Brinkman,J. Aarts###
(1217733, 1217741)
 We have studied the transport properties of LaTiO3/SrTiO3 (LTO/ST<missing VAR>O)heterostructures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[21.0, 2, 'D', 1]

O/S
###Inhomogeneous superconductivity and quasilinear magnetoresistance at amorphous LaTiO3/SrTiO3 interfaces|N. Lebedev,M. Stehno,A. Rana,N. Gauquelin,J. Verbeeck,A. Brinkman,J. Aarts###
(1217746, 1217748)
 We have studied the transport properties of LaTiO3/SrTiO3 (LTO/ST<missing VAR>O)heterostructures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[14.0, 2, 'D', 1]

O
###Inhomogeneous superconductivity and quasilinear magnetoresistance at amorphous LaTiO3/SrTiO3 interfaces|N. Lebedev,M. Stehno,A. Rana,N. Gauquelin,J. Verbeeck,A. Brinkman,J. Aarts###
(1217750, 1217750)
 We have studied the transport properties of LaTiO3/SrTiO3 (LTO/ST<missing VAR>O)heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 2, 'D', 1]

In
###Inhomogeneous superconductivity and quasilinear magnetoresistance at amorphous LaTiO3/SrTiO3 interfaces|N. Lebedev,M. Stehno,A. Rana,N. Gauquelin,J. Verbeeck,A. Brinkman,J. Aarts###
(1217757, 1217757)
 In spite of 2D growth observed in reflection high energyelectron diffraction, Transmission Electron Microscopy images revealed that thesamples tend to amorphize.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 2, 'D', 0]

S
###Inhomogeneous superconductivity and quasilinear magnetoresistance at amorphous LaTiO3/SrTiO3 interfaces|N. Lebedev,M. Stehno,A. Rana,N. Gauquelin,J. Verbeeck,A. Brinkman,J. Aarts###
(1217863, 1217863)
We established that conductivity arises mainly on the ST<missing VAR>O side of theinterface, and shows all the signs of the 2-dimensional electron gas usuallyobserved at interfaces between SrTiO3 and LaTiO3 or LaAlO3, including thepresence of two electron bands and tunability with a gate voltage.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 2, 'D', 2]

O
###Inhomogeneous superconductivity and quasilinear magnetoresistance at amorphous LaTiO3/SrTiO3 interfaces|N. Lebedev,M. Stehno,A. Rana,N. Gauquelin,J. Verbeeck,A. Brinkman,J. Aarts###
(1217865, 1217865)
We established that conductivity arises mainly on the ST<missing VAR>O side of theinterface, and shows all the signs of the 2-dimensional electron gas usuallyobserved at interfaces between SrTiO3 and LaTiO3 or LaAlO3, including thepresence of two electron bands and tunability with a gate voltage.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 2, 'D', 2]

SrTiO3
###Inhomogeneous superconductivity and quasilinear magnetoresistance at amorphous LaTiO3/SrTiO3 interfaces|N. Lebedev,M. Stehno,A. Rana,N. Gauquelin,J. Verbeeck,A. Brinkman,J. Aarts###
(1217910, 1217913)
We established that conductivity arises mainly on the ST<missing VAR>O side of theinterface, and shows all the signs of the 2-dimensional electron gas usuallyobserved at interfaces between SrTiO3 and LaTiO3 or LaAlO3, including thepresence of two electron bands and tunability with a gate voltage.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 2, 'D', 2]

LaTiO3
###Inhomogeneous superconductivity and quasilinear magnetoresistance at amorphous LaTiO3/SrTiO3 interfaces|N. Lebedev,M. Stehno,A. Rana,N. Gauquelin,J. Verbeeck,A. Brinkman,J. Aarts###
(1217917, 1217920)
We established that conductivity arises mainly on the ST<missing VAR>O side of theinterface, and shows all the signs of the 2-dimensional electron gas usuallyobserved at interfaces between SrTiO3 and LaTiO3 or LaAlO3, including thepresence of two electron bands and tunability with a gate voltage.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 2, 'D', 2]

LaAlO3
###Inhomogeneous superconductivity and quasilinear magnetoresistance at amorphous LaTiO3/SrTiO3 interfaces|N. Lebedev,M. Stehno,A. Rana,N. Gauquelin,J. Verbeeck,A. Brinkman,J. Aarts###
(1217924, 1217927)
We established that conductivity arises mainly on the ST<missing VAR>O side of theinterface, and shows all the signs of the 2-dimensional electron gas usuallyobserved at interfaces between SrTiO3 and LaTiO3 or LaAlO3, including thepresence of two electron bands and tunability with a gate voltage.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 2, 'D', 2]

CeAuBi2
###Electronic and magnetic properties of stoichiometric CeAuBi$_{2}$|M. M. Piva,R. Tartaglia,G. S. Freitas,J. C. Souza,D. S. Christovam,S. M. Thomas,J. B. Leão,W. Ratcliff,J. W. Lynn,C. Lane,J. -X. Zhu,J. D. Thompson,P. F. S. Rosa,C. Adriano,E. Granado,P. G. Pagliuso###
(1218076, 1218079)
Electronic and magnetic properties of stoichiometric CeAuBi2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 19, 'K', 2],[91.0, 0, ',', 3],[94.0, 0, ',', 3]

CeAuBi2
###Electronic and magnetic properties of stoichiometric CeAuBi$_{2}$|M. M. Piva,R. Tartaglia,G. S. Freitas,J. C. Souza,D. S. Christovam,S. M. Thomas,J. B. Leão,W. Ratcliff,J. W. Lynn,C. Lane,J. -X. Zhu,J. D. Thompson,P. F. S. Rosa,C. Adriano,E. Granado,P. G. Pagliuso###
(1218101, 1218104)
 We report the electronic and magnetic properties of stoichiometricCeAuBi2 single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 19, 'K', 1],[66.0, 0, ',', 2],[69.0, 0, ',', 2]

At
###Electronic and magnetic properties of stoichiometric CeAuBi$_{2}$|M. M. Piva,R. Tartaglia,G. S. Freitas,J. C. Souza,D. S. Christovam,S. M. Thomas,J. B. Leão,W. Ratcliff,J. W. Lynn,C. Lane,J. -X. Zhu,J. D. Thompson,P. F. S. Rosa,C. Adriano,E. Granado,P. G. Pagliuso###
(1218111, 1218111)
 At ambient pressure, CeAuBi2 ordersantiferromagnetically below a Ne<missing VAR>el temperature (T<missing VAR>N) of 19 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 19, 'K', 0],[59.0, 0, ',', 1],[62.0, 0, ',', 1]

CeAuBi2
###Electronic and magnetic properties of stoichiometric CeAuBi$_{2}$|M. M. Piva,R. Tartaglia,G. S. Freitas,J. C. Souza,D. S. Christovam,S. M. Thomas,J. B. Leão,W. Ratcliff,J. W. Lynn,C. Lane,J. -X. Zhu,J. D. Thompson,P. F. S. Rosa,C. Adriano,E. Granado,P. G. Pagliuso###
(1218118, 1218121)
 At ambient pressure, CeAuBi2 ordersantiferromagnetically below a Ne<missing VAR>el temperature (T<missing VAR>N) of 19 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 19, 'K', 0],[49.0, 0, ',', 1],[52.0, 0, ',', 1]

N
###Electronic and magnetic properties of stoichiometric CeAuBi$_{2}$|M. M. Piva,R. Tartaglia,G. S. Freitas,J. C. Souza,D. S. Christovam,S. M. Thomas,J. B. Leão,W. Ratcliff,J. W. Lynn,C. Lane,J. -X. Zhu,J. D. Thompson,P. F. S. Rosa,C. Adriano,E. Granado,P. G. Pagliuso###
(1218132, 1218132)
 At ambient pressure, CeAuBi2 ordersantiferromagnetically below a Ne<missing VAR>el temperature (T<missing VAR>N) of 19 K.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 19, 'K', 0],[38.0, 0, ',', 1],[41.0, 0, ',', 1]

N
###Electronic and magnetic properties of stoichiometric CeAuBi$_{2}$|M. M. Piva,R. Tartaglia,G. S. Freitas,J. C. Souza,D. S. Christovam,S. M. Thomas,J. B. Leão,W. Ratcliff,J. W. Lynn,C. Lane,J. -X. Zhu,J. D. Thompson,P. F. S. Rosa,C. Adriano,E. Granado,P. G. Pagliuso###
(1218140, 1218140)
 At ambient pressure, CeAuBi2 ordersantiferromagnetically below a Ne<missing VAR>el temperature (T<missing VAR>N) of 19 K.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 19, 'K', 0],[30.0, 0, ',', 1],[33.0, 0, ',', 1]

At
###Electronic and magnetic properties of stoichiometric CeAuBi$_{2}$|M. M. Piva,R. Tartaglia,G. S. Freitas,J. C. Souza,D. S. Christovam,S. M. Thomas,J. B. Leão,W. Ratcliff,J. W. Lynn,C. Lane,J. -X. Zhu,J. D. Thompson,P. F. S. Rosa,C. Adriano,E. Granado,P. G. Pagliuso###
(1218204, 1218204)
 At low temperatures several metamagnetic transitions are induced bythe application of fields parallel to the c<missing VAR>-axis, suggesting that themagnetic structure of CeAuBi2 changes as a function of field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 19, 'K', 2],[34.0, 0, ',', 1],[31.0, 0, ',', 1]

CeAuBi2
###Electronic and magnetic properties of stoichiometric CeAuBi$_{2}$|M. M. Piva,R. Tartaglia,G. S. Freitas,J. C. Souza,D. S. Christovam,S. M. Thomas,J. B. Leão,W. Ratcliff,J. W. Lynn,C. Lane,J. -X. Zhu,J. D. Thompson,P. F. S. Rosa,C. Adriano,E. Granado,P. G. Pagliuso###
(1218255, 1218258)
 At low temperatures several metamagnetic transitions are induced bythe application of fields parallel to the c<missing VAR>-axis, suggesting that themagnetic structure of CeAuBi2 changes as a function of field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 19, 'K', 2],[85.0, 0, ',', 1],[82.0, 0, ',', 1]

At
###Electronic and magnetic properties of stoichiometric CeAuBi$_{2}$|M. M. Piva,R. Tartaglia,G. S. Freitas,J. C. Souza,D. S. Christovam,S. M. Thomas,J. B. Leão,W. Ratcliff,J. W. Lynn,C. Lane,J. -X. Zhu,J. D. Thompson,P. F. S. Rosa,C. Adriano,E. Granado,P. G. Pagliuso###
(1218273, 1218273)
 At lowtemperatures, a linear positive magnetoresistance may indicate the presence ofband crossings near the Fermi level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 19, 'K', 3],[103.0, 0, ',', 2],[100.0, 0, ',', 2]

FeSe1-xS
###Non-Fermi liquid transport in the vicinity of nematic quantum critical point of FeSe$_{1-x}$S$_x$ superconductor|W. K. Huang,S. Hosoi,M. Čulo,S. Kasahara,Y. Sato,K. Matsuura,Y. Mizukami,M. Berben,N. E. Hussey,H. Kontani,T. Shibauchi,Y. Matsuda###
(1218697, 1218702)
Non-Fermi liquid transport in the vicinity of nematic quantum critical point of FeSe1-xSx<missing VAR> superconductor.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

In
###Non-Fermi liquid transport in the vicinity of nematic quantum critical point of FeSe$_{1-x}$S$_x$ superconductor|W. K. Huang,S. Hosoi,M. Čulo,S. Kasahara,Y. Sato,K. Matsuura,Y. Mizukami,M. Berben,N. E. Hussey,H. Kontani,T. Shibauchi,Y. Matsuda###
(1218753, 1218753)
 In this paper, we report transport measurements on theFeSe1-xSx<missing VAR> superconductor, which has a quantum critical point of anematic order without accompanying antiferromagnetism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeSe1-xS
###Non-Fermi liquid transport in the vicinity of nematic quantum critical point of FeSe$_{1-x}$S$_x$ superconductor|W. K. Huang,S. Hosoi,M. Čulo,S. Kasahara,Y. Sato,K. Matsuura,Y. Mizukami,M. Berben,N. E. Hussey,H. Kontani,T. Shibauchi,Y. Matsuda###
(1218773, 1218778)
 In this paper, we report transport measurements on theFeSe1-xSx<missing VAR> superconductor, which has a quantum critical point of anematic order without accompanying antiferromagnetism.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

H
###Non-Fermi liquid transport in the vicinity of nematic quantum critical point of FeSe$_{1-x}$S$_x$ superconductor|W. K. Huang,S. Hosoi,M. Čulo,S. Kasahara,Y. Sato,K. Matsuura,Y. Mizukami,M. Berben,N. E. Hussey,H. Kontani,T. Shibauchi,Y. Matsuda###
(1218873, 1218873)
 We find that in additionto a linear-in-temperature resistivity rhoxxpropto T<missing VAR>, which is close tothe Planckian limit, the Hall angle varies as cot thetarm H propto T<missing VAR>2and the low-field magnetoresistance is well scaled asDeltarhoxx/rhoxxpropto tan2 thetarm H in the vicinity of thenematic quantum critical point.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Non-Fermi liquid transport in the vicinity of nematic quantum critical point of FeSe$_{1-x}$S$_x$ superconductor|W. K. Huang,S. Hosoi,M. Čulo,S. Kasahara,Y. Sato,K. Matsuura,Y. Mizukami,M. Berben,N. E. Hussey,H. Kontani,T. Shibauchi,Y. Matsuda###
(1218914, 1218914)
 We find that in additionto a linear-in-temperature resistivity rhoxxpropto T<missing VAR>, which is close tothe Planckian limit, the Hall angle varies as cot thetarm H propto T<missing VAR>2and the low-field magnetoresistance is well scaled asDeltarhoxx/rhoxxpropto tan2 thetarm H in the vicinity of thenematic quantum critical point.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HoSb
###Observation of gapped state in rare-earth monopnictide HoSb|M. Mofazzel Hosen,Gyanendra Dhakal,Baokai Wang,Narayan Poudel,Bahadur Singh,Klauss Dimitri,Firoza Kabir,Christopher Sims,Sabin Regmi,William Neff,Anan Bari Sarkar,Amit Agarwal,Daniel Murray,Franziska Weickert,Krzysztof Gofryk,Orest Pavlosiuk,Piotr Wisniewski,Dariusz Kaczorowski,Arun Bansil,Madhab Neupane###
(1219059, 1219060)
Observation of gapped state in rare-earth monopnictide HoSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Observation of gapped state in rare-earth monopnictide HoSb|M. Mofazzel Hosen,Gyanendra Dhakal,Baokai Wang,Narayan Poudel,Bahadur Singh,Klauss Dimitri,Firoza Kabir,Christopher Sims,Sabin Regmi,William Neff,Anan Bari Sarkar,Amit Agarwal,Daniel Murray,Franziska Weickert,Krzysztof Gofryk,Orest Pavlosiuk,Piotr Wisniewski,Dariusz Kaczorowski,Arun Bansil,Madhab Neupane###
(1219186, 1219186)
 Here, using high-resolution angle-resolvedphotoemission spectroscopy (ARPES), magnetotransport, and parallelfirst-principles modeling, we examine the nature of electronic states in HoSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HoSb
###Observation of gapped state in rare-earth monopnictide HoSb|M. Mofazzel Hosen,Gyanendra Dhakal,Baokai Wang,Narayan Poudel,Bahadur Singh,Klauss Dimitri,Firoza Kabir,Christopher Sims,Sabin Regmi,William Neff,Anan Bari Sarkar,Amit Agarwal,Daniel Murray,Franziska Weickert,Krzysztof Gofryk,Orest Pavlosiuk,Piotr Wisniewski,Dariusz Kaczorowski,Arun Bansil,Madhab Neupane###
(1219221, 1219222)
 Here, using high-resolution angle-resolvedphotoemission spectroscopy (ARPES), magnetotransport, and parallelfirst-principles modeling, we examine the nature of electronic states in HoSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Observation of gapped state in rare-earth monopnictide HoSb|M. Mofazzel Hosen,Gyanendra Dhakal,Baokai Wang,Narayan Poudel,Bahadur Singh,Klauss Dimitri,Firoza Kabir,Christopher Sims,Sabin Regmi,William Neff,Anan Bari Sarkar,Amit Agarwal,Daniel Murray,Franziska Weickert,Krzysztof Gofryk,Orest Pavlosiuk,Piotr Wisniewski,Dariusz Kaczorowski,Arun Bansil,Madhab Neupane###
(1219268, 1219268)
Although we find the presence of bulk band gaps at the G<missing VAR> and X<missing VAR>-symmetry pointsof the Brillouin zone (BZ), we do not find these gaps to exhibit band inversionso that HoSb does not host a Dirac semimetal state.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HoSb
###Observation of gapped state in rare-earth monopnictide HoSb|M. Mofazzel Hosen,Gyanendra Dhakal,Baokai Wang,Narayan Poudel,Bahadur Singh,Klauss Dimitri,Firoza Kabir,Christopher Sims,Sabin Regmi,William Neff,Anan Bari Sarkar,Amit Agarwal,Daniel Murray,Franziska Weickert,Krzysztof Gofryk,Orest Pavlosiuk,Piotr Wisniewski,Dariusz Kaczorowski,Arun Bansil,Madhab Neupane###
(1219298, 1219299)
Although we find the presence of bulk band gaps at the G<missing VAR> and X<missing VAR>-symmetry pointsof the Brillouin zone (BZ), we do not find these gaps to exhibit band inversionso that HoSb does not host a Dirac semimetal state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HoSb
###Observation of gapped state in rare-earth monopnictide HoSb|M. Mofazzel Hosen,Gyanendra Dhakal,Baokai Wang,Narayan Poudel,Bahadur Singh,Klauss Dimitri,Firoza Kabir,Christopher Sims,Sabin Regmi,William Neff,Anan Bari Sarkar,Amit Agarwal,Daniel Murray,Franziska Weickert,Krzysztof Gofryk,Orest Pavlosiuk,Piotr Wisniewski,Dariusz Kaczorowski,Arun Bansil,Madhab Neupane###
(1219327, 1219328)
 Our magnetotransportmeasurements indicate that HoSb can be characterized as a correlatednearly-complete electron-hole-compensated semimetal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HoSb
###Observation of gapped state in rare-earth monopnictide HoSb|M. Mofazzel Hosen,Gyanendra Dhakal,Baokai Wang,Narayan Poudel,Bahadur Singh,Klauss Dimitri,Firoza Kabir,Christopher Sims,Sabin Regmi,William Neff,Anan Bari Sarkar,Amit Agarwal,Daniel Murray,Franziska Weickert,Krzysztof Gofryk,Orest Pavlosiuk,Piotr Wisniewski,Dariusz Kaczorowski,Arun Bansil,Madhab Neupane###
(1219400, 1219401)
 Our analysis reveals thatthe nearly perfect electron-hole compensation could drive the appearance ofnon-saturating XMR effect in HoSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si/SiO2
###Near-Zero-Field Spin-Dependent Recombination Current and Electrically Detected Magnetic Resonance from the Si/SiO$_2$ interface|Nicholas J. Harmon,James P. Ashton,Patrick M. Lenahan,Michael E. Flatté###
(1219440, 1219444)
Near-Zero-Field Spin-Dependent Recombination Current and Electrically Detected Magnetic Resonance from the Si/SiO2 interface.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

S
###Near-Zero-Field Spin-Dependent Recombination Current and Electrically Detected Magnetic Resonance from the Si/SiO$_2$ interface|Nicholas J. Harmon,James P. Ashton,Patrick M. Lenahan,Michael E. Flatté###
(1219466, 1219466)
 Dielectric interfaces critical for metal-oxide-semiconductor (M<missing VAR>OS) electronicdevices, such as the Si/SiO2 M<missing VAR>OS field effect transistor (M<missing VAR>OSFET), possesstrap states that can be visualized with electrically-detected spin resonancetechniques, however the interpretation of such measurements has been hamperedby the lack of a general theory of the phenomena.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si/SiO2
###Near-Zero-Field Spin-Dependent Recombination Current and Electrically Detected Magnetic Resonance from the Si/SiO$_2$ interface|Nicholas J. Harmon,James P. Ashton,Patrick M. Lenahan,Michael E. Flatté###
(1219481, 1219485)
 Dielectric interfaces critical for metal-oxide-semiconductor (M<missing VAR>OS) electronicdevices, such as the Si/SiO2 M<missing VAR>OS field effect transistor (M<missing VAR>OSFET), possesstrap states that can be visualized with electrically-detected spin resonancetechniques, however the interpretation of such measurements has been hamperedby the lack of a general theory of the phenomena.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

OS
###Near-Zero-Field Spin-Dependent Recombination Current and Electrically Detected Magnetic Resonance from the Si/SiO$_2$ interface|Nicholas J. Harmon,James P. Ashton,Patrick M. Lenahan,Michael E. Flatté###
(1219488, 1219489)
 Dielectric interfaces critical for metal-oxide-semiconductor (M<missing VAR>OS) electronicdevices, such as the Si/SiO2 M<missing VAR>OS field effect transistor (M<missing VAR>OSFET), possesstrap states that can be visualized with electrically-detected spin resonancetechniques, however the interpretation of such measurements has been hamperedby the lack of a general theory of the phenomena.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OSF
###Near-Zero-Field Spin-Dependent Recombination Current and Electrically Detected Magnetic Resonance from the Si/SiO$_2$ interface|Nicholas J. Harmon,James P. Ashton,Patrick M. Lenahan,Michael E. Flatté###
(1219499, 1219501)
 Dielectric interfaces critical for metal-oxide-semiconductor (M<missing VAR>OS) electronicdevices, such as the Si/SiO2 M<missing VAR>OS field effect transistor (M<missing VAR>OSFET), possesstrap states that can be visualized with electrically-detected spin resonancetechniques, however the interpretation of such measurements has been hamperedby the lack of a general theory of the phenomena.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Near-Zero-Field Spin-Dependent Recombination Current and Electrically Detected Magnetic Resonance from the Si/SiO$_2$ interface|Nicholas J. Harmon,James P. Ashton,Patrick M. Lenahan,Michael E. Flatté###
(1219636, 1219636)
 This article presents such atheory for two electrical spin-resonance techniques, electrically detectedmagnetic resonance (EDMR) and the recently observed near-zero fieldmagnetoresistance (NZFMR), by generalizing Shockley Read Hall trap-assistedrecombination current calculations via stochastic Liouville equations.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Near-Zero-Field Spin-Dependent Recombination Current and Electrically Detected Magnetic Resonance from the Si/SiO$_2$ interface|Nicholas J. Harmon,James P. Ashton,Patrick M. Lenahan,Michael E. Flatté###
(1219755, 1219755)
 By analyzing thebias dependence of NZFMR and EDMR, we find that the recombination in aSi/SiO2 M<missing VAR>OSFET is well understood within a semiclassical approach.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si/SiO2
###Near-Zero-Field Spin-Dependent Recombination Current and Electrically Detected Magnetic Resonance from the Si/SiO$_2$ interface|Nicholas J. Harmon,James P. Ashton,Patrick M. Lenahan,Michael E. Flatté###
(1219784, 1219788)
 By analyzing thebias dependence of NZFMR and EDMR, we find that the recombination in aSi/SiO2 M<missing VAR>OSFET is well understood within a semiclassical approach.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

OSF
###Near-Zero-Field Spin-Dependent Recombination Current and Electrically Detected Magnetic Resonance from the Si/SiO$_2$ interface|Nicholas J. Harmon,James P. Ashton,Patrick M. Lenahan,Michael E. Flatté###
(1219791, 1219793)
 By analyzing thebias dependence of NZFMR and EDMR, we find that the recombination in aSi/SiO2 M<missing VAR>OSFET is well understood within a semiclassical approach.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ag2CrO2
###Butterfly-shaped magnetoresistance in triangular-lattice antiferromagnet Ag$_2$CrO$_2$|Hiroki Taniguchi,Mori Watanabe,Masashi Tokuda,Shota Suzuki,Eria Imada,Takashi Ibe,Tomonori Arakawa,Hiroyuki Yoshida,Hiroaki Ishizuka,Kensuke Kobayashi,Yasuhiro Niimi###
(1219834, 1219838)
Butterfly-shaped magnetoresistance in triangular-lattice antiferromagnet Ag2CrO2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[210.0, 15, '%', 5]

F
###Butterfly-shaped magnetoresistance in triangular-lattice antiferromagnet Ag$_2$CrO$_2$|Hiroki Taniguchi,Mori Watanabe,Masashi Tokuda,Shota Suzuki,Eria Imada,Takashi Ibe,Tomonori Arakawa,Hiroyuki Yoshida,Hiroaki Ishizuka,Kensuke Kobayashi,Yasuhiro Niimi###
(1219851, 1219851)
 Spintronic devices using antiferromagnets (AFMs) are promising candidates forfuture applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[197.0, 15, '%', 4]

F
###Butterfly-shaped magnetoresistance in triangular-lattice antiferromagnet Ag$_2$CrO$_2$|Hiroki Taniguchi,Mori Watanabe,Masashi Tokuda,Shota Suzuki,Eria Imada,Takashi Ibe,Tomonori Arakawa,Hiroyuki Yoshida,Hiroaki Ishizuka,Kensuke Kobayashi,Yasuhiro Niimi###
(1219890, 1219890)
 Recently, many interesting physical properties have beenreported with AFM<missing VAR>-based devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 15, '%', 3]

Ag2CrO2
###Butterfly-shaped magnetoresistance in triangular-lattice antiferromagnet Ag$_2$CrO$_2$|Hiroki Taniguchi,Mori Watanabe,Masashi Tokuda,Shota Suzuki,Eria Imada,Takashi Ibe,Tomonori Arakawa,Hiroyuki Yoshida,Hiroaki Ishizuka,Kensuke Kobayashi,Yasuhiro Niimi###
(1219933, 1219937)
 Here we report a butterfly-shapedmagnetoresistance (MR) in a micrometer-sized triangular-lattice antiferromagnetAg2CrO2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 15, '%', 2]

CrO2
###Butterfly-shaped magnetoresistance in triangular-lattice antiferromagnet Ag$_2$CrO$_2$|Hiroki Taniguchi,Mori Watanabe,Masashi Tokuda,Shota Suzuki,Eria Imada,Takashi Ibe,Tomonori Arakawa,Hiroyuki Yoshida,Hiroaki Ishizuka,Kensuke Kobayashi,Yasuhiro Niimi###
(1219957, 1219959)
 The material consists of two-dimensional triangular-latticeCrO2 layers with antiferromagnetically coupled S  3/2 spins and Ag2layers with high electrical conductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 15, '%', 1]

S
###Butterfly-shaped magnetoresistance in triangular-lattice antiferromagnet Ag$_2$CrO$_2$|Hiroki Taniguchi,Mori Watanabe,Masashi Tokuda,Shota Suzuki,Eria Imada,Takashi Ibe,Tomonori Arakawa,Hiroyuki Yoshida,Hiroaki Ishizuka,Kensuke Kobayashi,Yasuhiro Niimi###
(1219969, 1219969)
 The material consists of two-dimensional triangular-latticeCrO2 layers with antiferromagnetically coupled S  3/2 spins and Ag2layers with high electrical conductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 15, '%', 1]

Ag2
###Butterfly-shaped magnetoresistance in triangular-lattice antiferromagnet Ag$_2$CrO$_2$|Hiroki Taniguchi,Mori Watanabe,Masashi Tokuda,Shota Suzuki,Eria Imada,Takashi Ibe,Tomonori Arakawa,Hiroyuki Yoshida,Hiroaki Ishizuka,Kensuke Kobayashi,Yasuhiro Niimi###
(1219980, 1219981)
 The material consists of two-dimensional triangular-latticeCrO2 layers with antiferromagnetically coupled S  3/2 spins and Ag2layers with high electrical conductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 15, '%', 1]

CrO2
###Butterfly-shaped magnetoresistance in triangular-lattice antiferromagnet Ag$_2$CrO$_2$|Hiroki Taniguchi,Mori Watanabe,Masashi Tokuda,Shota Suzuki,Eria Imada,Takashi Ibe,Tomonori Arakawa,Hiroyuki Yoshida,Hiroaki Ishizuka,Kensuke Kobayashi,Yasuhiro Niimi###
(1220027, 1220029)
 The butterfly-shaped MR appears onlywhen the magnetic field is applied perpendicularly to the CrO2 plane withthe maximum MR ratio (approx 15%) at the magnetic ordering temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 15, '%', 0]

Ag2CrO2
###Butterfly-shaped magnetoresistance in triangular-lattice antiferromagnet Ag$_2$CrO$_2$|Hiroki Taniguchi,Mori Watanabe,Masashi Tokuda,Shota Suzuki,Eria Imada,Takashi Ibe,Tomonori Arakawa,Hiroyuki Yoshida,Hiroaki Ishizuka,Kensuke Kobayashi,Yasuhiro Niimi###
(1220141, 1220145)
 We propose a theoretical model where fluctuations of partiallydisordered spins with the Ising anisotropy play an essential role in thebutterfly-shaped MR in Ag2CrO2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 15, '%', 2]

As
###Room-temperature giant magnetotranstance effect in single-phase multiferroics|Yan-Fen Chang,Young Sun###
(1220230, 1220230)
 As a result, current studies onapplications of the magnetoelectric effects are mainly focusing on multiferroicheterostructures and composites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 1000, 'Oe', 2]

BaSrCo2Fe11AlO22
###Room-temperature giant magnetotranstance effect in single-phase multiferroics|Yan-Fen Chang,Young Sun###
(1220337, 1220345)
 A lowmagnetic field of 1000 Oe applied on the spin-driven multiferroic hexaferritesBaSrCo2Fe11AlO22 and Ba0.9Sr1.1Co2Fe11AlO22 is able to cause a huge change inthe linear magnetoelectric coefficient by several orders, leading to a giantmagnetotranstance (GMT) effect at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5789473684210527,0,0,0,0,0.02631578947368421,0,0,0,0,0,0,0,0,0,0,0,0,0.2894736842105263,0.05263157894736842,0,0,0,0,0,0,0,0,0,0,0.02631578947368421,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.02631578947368421,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 1000, 'Oe', 0]

Ba0.9Sr1.1Co2Fe11AlO22
###Room-temperature giant magnetotranstance effect in single-phase multiferroics|Yan-Fen Chang,Young Sun###
(1220349, 1220359)
 A lowmagnetic field of 1000 Oe applied on the spin-driven multiferroic hexaferritesBaSrCo2Fe11AlO22 and Ba0.9Sr1.1Co2Fe11AlO22 is able to cause a huge change inthe linear magnetoelectric coefficient by several orders, leading to a giantmagnetotranstance (GMT) effect at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5789473684210527,0,0,0,0,0.02631578947368421,0,0,0,0,0,0,0,0,0,0,0,0,0.2894736842105263,0.05263157894736842,0,0,0,0,0,0,0,0,0,0,0.028947368421052635,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.02368421052631579,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 1000, 'Oe', 0]

(CsSnI3)
###Extraordinary Phase Coherence Length in Epitaxial Halide Perovskites|K. Nasyedkin,I. King,L. Zhang,P. Chen,L. Wang,R. J. Staples,R. R. Lunt,J. Pollanen###
(1220958, 1220963)
 This study leverages advances in vapor-phaseepitaxy of halide perovskites to perform low-temperature magnetotransportmeasurements on single-domain cesium tin iodide (CsSnI3) epitaxial thinfilms.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0.6,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CrI3
###Electronic correlation, magnetic structure and magnetotransport in few-layer CrI3|Soumyajit Sarkar,Peter Kratzer###
(1221133, 1221135)
Electronic correlation, magnetic structure and magnetotransport in few-layer CrI3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

U
###Electronic correlation, magnetic structure and magnetotransport in few-layer CrI3|Soumyajit Sarkar,Peter Kratzer###
(1221160, 1221160)
 Using density functional theory combined with a Hubbard model (DFTU ), theelectronic band structure of CrI3 multilayers, both free-standing and enclosedbetween graphene contacts, is calculated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CrI3
###Electronic correlation, magnetic structure and magnetotransport in few-layer CrI3|Soumyajit Sarkar,Peter Kratzer###
(1221176, 1221178)
 Using density functional theory combined with a Hubbard model (DFTU ), theelectronic band structure of CrI3 multilayers, both free-standing and enclosedbetween graphene contacts, is calculated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

U
###Electronic correlation, magnetic structure and magnetotransport in few-layer CrI3|Soumyajit Sarkar,Peter Kratzer###
(1221217, 1221217)
 We show that the DFTU approach,together with the around mean field correction scheme, is able to describethe vertical magnetotransport in line with the experimental measurements ofmagnetoresistance in multi-layered CrI3 enclosed between graphene contacts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CrI3
###Electronic correlation, magnetic structure and magnetotransport in few-layer CrI3|Soumyajit Sarkar,Peter Kratzer###
(1221278, 1221280)
 We show that the DFTU approach,together with the around mean field correction scheme, is able to describethe vertical magnetotransport in line with the experimental measurements ofmagnetoresistance in multi-layered CrI3 enclosed between graphene contacts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CrI3
###Electronic correlation, magnetic structure and magnetotransport in few-layer CrI3|Soumyajit Sarkar,Peter Kratzer###
(1221413, 1221415)
 Our description of the magneticexchange interaction is compatible with the experimentally observedantiferromagnetic ground state in the bilayer CrI3 and the transition to aferromagnetic arrangement in a small external magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

U
###Electronic correlation, magnetic structure and magnetotransport in few-layer CrI3|Soumyajit Sarkar,Peter Kratzer###
(1221458, 1221458)
 Thus, usingspin-polarized DFTU with an around mean field correction, a consistentoverall picture is achieved.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Universal scaling behaviour near vortex-solid/glass to vortex-fluid transition in type-II superconductors in two- and three-dimensions|Hemanta Kumar Kundu,John Jesudasan,Pratap Raychaudhuri,Subroto Mukerjee,Aveek Bid###
(1221521, 1221522)
Universal scaling behaviour near vortex-solid/glass to vortex-fluid transition in type-II superconductors in two- and three-dimensions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 2, 'D', 2],[106.0, 3, 'D', 2],[183.0, 2, 'D', 4],[186.0, 3, 'D', 4],[221.0, 3, 'D', 5],[265.0, 2, 'D', 6],[350.0, 3, 'D', 7]

In
###Universal scaling behaviour near vortex-solid/glass to vortex-fluid transition in type-II superconductors in two- and three-dimensions|Hemanta Kumar Kundu,John Jesudasan,Pratap Raychaudhuri,Subroto Mukerjee,Aveek Bid###
(1221538, 1221538)
 In this article, we present evidence for the existence of vortex-solid/glass(VG) to vortex-fluid (VF) transition in a type-II superconductor (SC), NbN.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 2, 'D', 1],[90.0, 3, 'D', 1],[167.0, 2, 'D', 3],[170.0, 3, 'D', 3],[205.0, 3, 'D', 4],[249.0, 2, 'D', 5],[334.0, 3, 'D', 6]

V
###Universal scaling behaviour near vortex-solid/glass to vortex-fluid transition in type-II superconductors in two- and three-dimensions|Hemanta Kumar Kundu,John Jesudasan,Pratap Raychaudhuri,Subroto Mukerjee,Aveek Bid###
(1221567, 1221567)
 In this article, we present evidence for the existence of vortex-solid/glass(VG) to vortex-fluid (VF) transition in a type-II superconductor (SC), NbN.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 2, 'D', 1],[61.0, 3, 'D', 1],[138.0, 2, 'D', 3],[141.0, 3, 'D', 3],[176.0, 3, 'D', 4],[220.0, 2, 'D', 5],[305.0, 3, 'D', 6]

(VF)
###Universal scaling behaviour near vortex-solid/glass to vortex-fluid transition in type-II superconductors in two- and three-dimensions|Hemanta Kumar Kundu,John Jesudasan,Pratap Raychaudhuri,Subroto Mukerjee,Aveek Bid###
(1221577, 1221580)
 In this article, we present evidence for the existence of vortex-solid/glass(VG) to vortex-fluid (VF) transition in a type-II superconductor (SC), NbN.
Featurization successful!
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 2, 'D', 1],[48.0, 3, 'D', 1],[125.0, 2, 'D', 3],[128.0, 3, 'D', 3],[163.0, 3, 'D', 4],[207.0, 2, 'D', 5],[292.0, 3, 'D', 6]

II
###Universal scaling behaviour near vortex-solid/glass to vortex-fluid transition in type-II superconductors in two- and three-dimensions|Hemanta Kumar Kundu,John Jesudasan,Pratap Raychaudhuri,Subroto Mukerjee,Aveek Bid###
(1221590, 1221591)
 In this article, we present evidence for the existence of vortex-solid/glass(VG) to vortex-fluid (VF) transition in a type-II superconductor (SC), NbN.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 2, 'D', 1],[37.0, 3, 'D', 1],[114.0, 2, 'D', 3],[117.0, 3, 'D', 3],[152.0, 3, 'D', 4],[196.0, 2, 'D', 5],[281.0, 3, 'D', 6]

(SC)
###Universal scaling behaviour near vortex-solid/glass to vortex-fluid transition in type-II superconductors in two- and three-dimensions|Hemanta Kumar Kundu,John Jesudasan,Pratap Raychaudhuri,Subroto Mukerjee,Aveek Bid###
(1221595, 1221598)
 In this article, we present evidence for the existence of vortex-solid/glass(VG) to vortex-fluid (VF) transition in a type-II superconductor (SC), NbN.
Featurization successful!
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 2, 'D', 1],[30.0, 3, 'D', 1],[107.0, 2, 'D', 3],[110.0, 3, 'D', 3],[145.0, 3, 'D', 4],[189.0, 2, 'D', 5],[274.0, 3, 'D', 6]

NbN
###Universal scaling behaviour near vortex-solid/glass to vortex-fluid transition in type-II superconductors in two- and three-dimensions|Hemanta Kumar Kundu,John Jesudasan,Pratap Raychaudhuri,Subroto Mukerjee,Aveek Bid###
(1221601, 1221602)
 In this article, we present evidence for the existence of vortex-solid/glass(VG) to vortex-fluid (VF) transition in a type-II superconductor (SC), NbN.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 2, 'D', 1],[26.0, 3, 'D', 1],[103.0, 2, 'D', 3],[106.0, 3, 'D', 3],[141.0, 3, 'D', 4],[185.0, 2, 'D', 5],[270.0, 3, 'D', 6]

V
###Universal scaling behaviour near vortex-solid/glass to vortex-fluid transition in type-II superconductors in two- and three-dimensions|Hemanta Kumar Kundu,John Jesudasan,Pratap Raychaudhuri,Subroto Mukerjee,Aveek Bid###
(1221612, 1221612)
 Weprobed the VG<missing VAR> to VF transition in both 2D and 3D films of NbN through studiesof magnetoresistance and current-voltage characteristics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 2, 'D', 0],[16.0, 3, 'D', 0],[93.0, 2, 'D', 2],[96.0, 3, 'D', 2],[131.0, 3, 'D', 3],[175.0, 2, 'D', 4],[260.0, 3, 'D', 5]

VF
###Universal scaling behaviour near vortex-solid/glass to vortex-fluid transition in type-II superconductors in two- and three-dimensions|Hemanta Kumar Kundu,John Jesudasan,Pratap Raychaudhuri,Subroto Mukerjee,Aveek Bid###
(1221617, 1221618)
 Weprobed the VG<missing VAR> to VF transition in both 2D and 3D films of NbN through studiesof magnetoresistance and current-voltage characteristics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 2, 'D', 0],[10.0, 3, 'D', 0],[87.0, 2, 'D', 2],[90.0, 3, 'D', 2],[125.0, 3, 'D', 3],[169.0, 2, 'D', 4],[254.0, 3, 'D', 5]

NbN
###Universal scaling behaviour near vortex-solid/glass to vortex-fluid transition in type-II superconductors in two- and three-dimensions|Hemanta Kumar Kundu,John Jesudasan,Pratap Raychaudhuri,Subroto Mukerjee,Aveek Bid###
(1221634, 1221635)
 Weprobed the VG<missing VAR> to VF transition in both 2D and 3D films of NbN through studiesof magnetoresistance and current-voltage characteristics.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 2, 'D', 0],[6.0, 3, 'D', 0],[70.0, 2, 'D', 2],[73.0, 3, 'D', 2],[108.0, 3, 'D', 3],[152.0, 2, 'D', 4],[237.0, 3, 'D', 5]

H
###Universal scaling behaviour near vortex-solid/glass to vortex-fluid transition in type-II superconductors in two- and three-dimensions|Hemanta Kumar Kundu,John Jesudasan,Pratap Raychaudhuri,Subroto Mukerjee,Aveek Bid###
(1221694, 1221694)
 The H-T<missing VAR> phase diagram for the 2D and 3DSC are found to be significantly different near the critical point.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 2, 'D', 2],[66.0, 3, 'D', 2],[11.0, 2, 'D', 0],[14.0, 3, 'D', 0],[49.0, 3, 'D', 1],[93.0, 2, 'D', 2],[178.0, 3, 'D', 3]

SC
###Universal scaling behaviour near vortex-solid/glass to vortex-fluid transition in type-II superconductors in two- and three-dimensions|Hemanta Kumar Kundu,John Jesudasan,Pratap Raychaudhuri,Subroto Mukerjee,Aveek Bid###
(1221711, 1221712)
 The H-T<missing VAR> phase diagram for the 2D and 3DSC are found to be significantly different near the critical point.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 2, 'D', 2],[83.0, 3, 'D', 2],[6.0, 2, 'D', 0],[3.0, 3, 'D', 0],[31.0, 3, 'D', 1],[75.0, 2, 'D', 2],[160.0, 3, 'D', 3]

In
###Universal scaling behaviour near vortex-solid/glass to vortex-fluid transition in type-II superconductors in two- and three-dimensions|Hemanta Kumar Kundu,John Jesudasan,Pratap Raychaudhuri,Subroto Mukerjee,Aveek Bid###
(1221735, 1221735)
 In the caseof 3D SC, the exponent values obtained from the two independent measurementsshow excellent match.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 2, 'D', 3],[107.0, 3, 'D', 3],[30.0, 2, 'D', 1],[27.0, 3, 'D', 1],[8.0, 3, 'D', 0],[52.0, 2, 'D', 1],[137.0, 3, 'D', 2]

SC
###Universal scaling behaviour near vortex-solid/glass to vortex-fluid transition in type-II superconductors in two- and three-dimensions|Hemanta Kumar Kundu,John Jesudasan,Pratap Raychaudhuri,Subroto Mukerjee,Aveek Bid###
(1221745, 1221746)
 In the caseof 3D SC, the exponent values obtained from the two independent measurementsshow excellent match.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 2, 'D', 3],[117.0, 3, 'D', 3],[40.0, 2, 'D', 1],[37.0, 3, 'D', 1],[2.0, 3, 'D', 0],[41.0, 2, 'D', 1],[126.0, 3, 'D', 2]

SC
###Universal scaling behaviour near vortex-solid/glass to vortex-fluid transition in type-II superconductors in two- and three-dimensions|Hemanta Kumar Kundu,John Jesudasan,Pratap Raychaudhuri,Subroto Mukerjee,Aveek Bid###
(1221789, 1221790)
 On the other hand, for the 2D SC, the exponents obtainedfrom the two experiments were significantly different.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 2, 'D', 4],[161.0, 3, 'D', 4],[84.0, 2, 'D', 2],[81.0, 3, 'D', 2],[46.0, 3, 'D', 1],[2.0, 2, 'D', 0],[82.0, 3, 'D', 1]

SC
###Universal scaling behaviour near vortex-solid/glass to vortex-fluid transition in type-II superconductors in two- and three-dimensions|Hemanta Kumar Kundu,John Jesudasan,Pratap Raychaudhuri,Subroto Mukerjee,Aveek Bid###
(1221856, 1221857)
 We attribute this to thefact that the characteristic length scale diverges near the critical point in a2D<missing VAR> SC in a distinctly different way from its 3D counterpart form scalingbehaviour.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[231.0, 2, 'D', 5],[228.0, 3, 'D', 5],[151.0, 2, 'D', 3],[148.0, 3, 'D', 3],[113.0, 3, 'D', 2],[69.0, 2, 'D', 1],[15.0, 3, 'D', 0]

MnBi2Te4
###Surface-induced linear magnetoresistance in antiferromagnetic topological insulator MnBi2Te4|X. Lei,L. Zhou,Z. Y. Hao,X. Z. Ma,C. Ma,Y. Q. Wang,P. B. Chen,B. C. Ye,L. Wang,F. Ye,J. N. Wang,J. W. Mei,H. T. He###
(1221908, 1221912)
Surface-induced linear magnetoresistance in antiferromagnetic topological insulator MnBi2Te4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 260, 'K', 1],[152.0, 2, 'D', 3]

MnBi2Te4
###Surface-induced linear magnetoresistance in antiferromagnetic topological insulator MnBi2Te4|X. Lei,L. Zhou,Z. Y. Hao,X. Z. Ma,C. Ma,Y. Q. Wang,P. B. Chen,B. C. Ye,L. Wang,F. Ye,J. N. Wang,J. W. Mei,H. T. He###
(1221936, 1221940)
 Through a thorough magneto-transport study of antiferromagnetic topologicalinsulator MnBi2Te4 (MBT) thick films, a positive linear magnetoresistance (LMR)with a two-dimensional (2D) character is found in high perpendicular magneticfields and temperatures up to at least 260 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 260, 'K', 0],[124.0, 2, 'D', 2]

(Te)
###Magneto-transport properties of tellurium under extreme conditions|Kazuto Akiba,Kaya Kobayashi,Tatsuo C. Kobayashi,Ryo Koezuka,Atsushi Miyake,Jun Gouchi,Yoshiya Uwatoko,Masashi Tokunaga###
(1222300, 1222302)
 This study investigates the transport properties of a chiral elementalsemiconductor tellurium (Te) under magnetic fields and pressure.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 4, 'GPa', 1],[116.0, 2, 'K', 3]

Te
###Magneto-transport properties of tellurium under extreme conditions|Kazuto Akiba,Kaya Kobayashi,Tatsuo C. Kobayashi,Ryo Koezuka,Atsushi Miyake,Jun Gouchi,Yoshiya Uwatoko,Masashi Tokunaga###
(1222332, 1222332)
 Application ofhydrostatic pressure reduces the resistivity of Te, while its temperaturedependence remains semiconducting up to 4 GPa, contrary to recent theoreticaland experimental studies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 4, 'GPa', 0],[86.0, 2, 'K', 2]

Pa
###Magneto-transport properties of tellurium under extreme conditions|Kazuto Akiba,Kaya Kobayashi,Tatsuo C. Kobayashi,Ryo Koezuka,Atsushi Miyake,Jun Gouchi,Yoshiya Uwatoko,Masashi Tokunaga###
(1222411, 1222411)
 The resulting metallic phase above 4G<missing VAR>Pa exhibits superconductivity at 2 K along with a noticeable linearmagnetoresistance effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 4, 'GPa', 2],[7.0, 2, 'K', 0]

Te
###Magneto-transport properties of tellurium under extreme conditions|Kazuto Akiba,Kaya Kobayashi,Tatsuo C. Kobayashi,Ryo Koezuka,Atsushi Miyake,Jun Gouchi,Yoshiya Uwatoko,Masashi Tokunaga###
(1222482, 1222482)
 On the other hand, at ambient pressure, we identifiedmetallic surface states on the as-cleaved (10bar10) surfaces of Te.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 4, 'GPa', 3],[64.0, 2, 'K', 1]

In
###Diabolical touching point in the magnetic energy levels of topological nodal-line metals|Chong Wang,Zhongyi Zhang,Chen Fang,A. Alexandradinata###
(1222666, 1222666)
 In thistwo-dimensional parameter space, it is shown that two conically-dispersingLandau levels can touch at a diabolical point -- a Landau-Dirac point.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CaP3
###Diabolical touching point in the magnetic energy levels of topological nodal-line metals|Chong Wang,Zhongyi Zhang,Chen Fang,A. Alexandradinata###
(1222803, 1222805)
 Both conditions are realizable in topological nodal-linemetals, as we exemplify with CaP3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pb1-x
###Weak antilocalization beyond the fully diffusive regime in Pb1-xSnxSe topological quantum wells|Jiashu Wang,X. Liu,C. Bunker,L. Riney,B. Qing,S. K. Bac,M. Zhukovskyi,T. Orlova,S. Rouvimov,M. Dobrowolska,J. K. Furdyna,B. A. Assaf###
(1222909, 1222912)
Weak antilocalization beyond the fully diffusive regime in Pb1-xSnxSe topological quantum wells.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[144.0, 100, 'nm', 3]

Se
###Weak antilocalization beyond the fully diffusive regime in Pb1-xSnxSe topological quantum wells|Jiashu Wang,X. Liu,C. Bunker,L. Riney,B. Qing,S. K. Bac,M. Zhukovskyi,T. Orlova,S. Rouvimov,M. Dobrowolska,J. K. Furdyna,B. A. Assaf###
(1222914, 1222914)
Weak antilocalization beyond the fully diffusive regime in Pb1-xSnxSe topological quantum wells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 100, 'nm', 3]

W
###Weak antilocalization beyond the fully diffusive regime in Pb1-xSnxSe topological quantum wells|Jiashu Wang,X. Liu,C. Bunker,L. Riney,B. Qing,S. K. Bac,M. Zhukovskyi,T. Orlova,S. Rouvimov,M. Dobrowolska,J. K. Furdyna,B. A. Assaf###
(1222942, 1222942)
 We report the measurements and analysis of weak antilocalization (WAL) inPb1-xSnxSe topological quantum wells in a new regime where the elasticscattering length is larger than the magnetic length.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 100, 'nm', 2]

Pb1-x
###Weak antilocalization beyond the fully diffusive regime in Pb1-xSnxSe topological quantum wells|Jiashu Wang,X. Liu,C. Bunker,L. Riney,B. Qing,S. K. Bac,M. Zhukovskyi,T. Orlova,S. Rouvimov,M. Dobrowolska,J. K. Furdyna,B. A. Assaf###
(1222950, 1222953)
 We report the measurements and analysis of weak antilocalization (WAL) inPb1-xSnxSe topological quantum wells in a new regime where the elasticscattering length is larger than the magnetic length.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[103.0, 100, 'nm', 2]

Se
###Weak antilocalization beyond the fully diffusive regime in Pb1-xSnxSe topological quantum wells|Jiashu Wang,X. Liu,C. Bunker,L. Riney,B. Qing,S. K. Bac,M. Zhukovskyi,T. Orlova,S. Rouvimov,M. Dobrowolska,J. K. Furdyna,B. A. Assaf###
(1222955, 1222955)
 We report the measurements and analysis of weak antilocalization (WAL) inPb1-xSnxSe topological quantum wells in a new regime where the elasticscattering length is larger than the magnetic length.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 100, 'nm', 2]

I
###Weak antilocalization beyond the fully diffusive regime in Pb1-xSnxSe topological quantum wells|Jiashu Wang,X. Liu,C. Bunker,L. Riney,B. Qing,S. K. Bac,M. Zhukovskyi,T. Orlova,S. Rouvimov,M. Dobrowolska,J. K. Furdyna,B. A. Assaf###
(1223034, 1223034)
 We achieve this regimethrough the development of high-quality epitaxy and doping of topologicalcrystalline insulator (T<missing VAR>CI) quantum wells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 100, 'nm', 1]

In
###Weak antilocalization beyond the fully diffusive regime in Pb1-xSnxSe topological quantum wells|Jiashu Wang,X. Liu,C. Bunker,L. Riney,B. Qing,S. K. Bac,M. Zhukovskyi,T. Orlova,S. Rouvimov,M. Dobrowolska,J. K. Furdyna,B. A. Assaf###
(1223073, 1223073)
 In thistransport regime, the Hikami-Larkin-Nagaoka model is no longer valid.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 100, 'nm', 1]

Nb/Co
###Transport characterization of magnetic states in Superconductor/Ferromagnet Nb/Co multilayers|Olena M. Kapran,Roman Morari,Taras Golod,Evgenii A. Borodianskyi,Vladimir Boian,Andrei Prepelita,Nikolay Klenov,Anatoli Sidorenko,Vladimir M. Krasnov###
(1223226, 1223228)
Transport characterization of magnetic states in Superconductor/Ferromagnet Nb/Co multilayers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

F
###Transport characterization of magnetic states in Superconductor/Ferromagnet Nb/Co multilayers|Olena M. Kapran,Roman Morari,Taras Golod,Evgenii A. Borodianskyi,Vladimir Boian,Andrei Prepelita,Nikolay Klenov,Anatoli Sidorenko,Vladimir M. Krasnov###
(1223257, 1223257)
 Employment of the non-trivial proximity effect in Superconductor/Ferromagnet(S/F) heterostructures for creation of novel superconducting devices requiresan accurate control of magnetic states in complex thin-film multilayerscomposing such devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Transport characterization of magnetic states in Superconductor/Ferromagnet Nb/Co multilayers|Olena M. Kapran,Roman Morari,Taras Golod,Evgenii A. Borodianskyi,Vladimir Boian,Andrei Prepelita,Nikolay Klenov,Anatoli Sidorenko,Vladimir M. Krasnov###
(1223307, 1223307)
 In this work we study experimentally in-plane transportproperties of micro-structured Nb/Co multilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nb/Co
###Transport characterization of magnetic states in Superconductor/Ferromagnet Nb/Co multilayers|Olena M. Kapran,Roman Morari,Taras Golod,Evgenii A. Borodianskyi,Vladimir Boian,Andrei Prepelita,Nikolay Klenov,Anatoli Sidorenko,Vladimir M. Krasnov###
(1223334, 1223336)
 In this work we study experimentally in-plane transportproperties of micro-structured Nb/Co multilayers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

In
###Transport characterization of magnetic states in Superconductor/Ferromagnet Nb/Co multilayers|Olena M. Kapran,Roman Morari,Taras Golod,Evgenii A. Borodianskyi,Vladimir Boian,Andrei Prepelita,Nikolay Klenov,Anatoli Sidorenko,Vladimir M. Krasnov###
(1223435, 1223435)
 In particular, weidentify the range of existence of the coherently rotating, monodomainscissor-like state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S/F
###Transport characterization of magnetic states in Superconductor/Ferromagnet Nb/Co multilayers|Olena M. Kapran,Roman Morari,Taras Golod,Evgenii A. Borodianskyi,Vladimir Boian,Andrei Prepelita,Nikolay Klenov,Anatoli Sidorenko,Vladimir M. Krasnov###
(1223582, 1223584)
 Thus, we identify the range of parameters and the procedure forcontrollable operation of devices based on such S/F heterostructures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

EuCuSb
###Competing spin modulations in a magnetically frustrated semimetal EuCuSb|Hidefumi Takahashi,Kai Aono,Yusuke Nambu,Ryoji Kiyanagi,Takuya Nomoto,Masato Sakano,Kyoko Ishizaka,Ryotaro Arita,Shintaro Ishiwata###
(1223613, 1223615)
Competing spin modulations in a magnetically frustrated semimetal EuCuSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuCuSb
###Competing spin modulations in a magnetically frustrated semimetal EuCuSb|Hidefumi Takahashi,Kai Aono,Yusuke Nambu,Ryoji Kiyanagi,Takuya Nomoto,Masato Sakano,Kyoko Ishizaka,Ryotaro Arita,Shintaro Ishiwata###
(1223636, 1223638)
 The competing magnetic ground states of the itinerant magnet EuCuSb, whichhas a hexagonal layered structure, were studied via magnetization, resistivity,and neutron diffraction measurements on single-crystal samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuCuSb
###Competing spin modulations in a magnetically frustrated semimetal EuCuSb|Hidefumi Takahashi,Kai Aono,Yusuke Nambu,Ryoji Kiyanagi,Takuya Nomoto,Masato Sakano,Kyoko Ishizaka,Ryotaro Arita,Shintaro Ishiwata###
(1223685, 1223687)
 EuCuSb has athree-dimensional semimetallic band structure as confirmed by band calculationand angle-resolved photoelectron spectroscopy, consistent with the nearlyisotropic metallic conductivity in the paramagnetic state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N1
###Competing spin modulations in a magnetically frustrated semimetal EuCuSb|Hidefumi Takahashi,Kai Aono,Yusuke Nambu,Ryoji Kiyanagi,Takuya Nomoto,Masato Sakano,Kyoko Ishizaka,Ryotaro Arita,Shintaro Ishiwata###
(1223767, 1223768)
 However, below theantiferromagnetic transition temperature of T<missing VAR>N1 (8.5 K), the resistivity,especially along the hexagonal axis, increases significantly.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Competing spin modulations in a magnetically frustrated semimetal EuCuSb|Hidefumi Takahashi,Kai Aono,Yusuke Nambu,Ryoji Kiyanagi,Takuya Nomoto,Masato Sakano,Kyoko Ishizaka,Ryotaro Arita,Shintaro Ishiwata###
(1223773, 1223773)
 However, below theantiferromagnetic transition temperature of T<missing VAR>N1 (8.5 K), the resistivity,especially along the hexagonal axis, increases significantly.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Eu
###Competing spin modulations in a magnetically frustrated semimetal EuCuSb|Hidefumi Takahashi,Kai Aono,Yusuke Nambu,Ryoji Kiyanagi,Takuya Nomoto,Masato Sakano,Kyoko Ishizaka,Ryotaro Arita,Shintaro Ishiwata###
(1223840, 1223840)
Neutron diffraction measurements show that the Eu spins, which orderferromagnetically within each layer, are collinearly modulated(up-up-down-down) along the hexagonal axis below T<missing VAR>N1, followed by the partialemergence of helical spin modulation below T<missing VAR>N2 (6 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N1
###Competing spin modulations in a magnetically frustrated semimetal EuCuSb|Hidefumi Takahashi,Kai Aono,Yusuke Nambu,Ryoji Kiyanagi,Takuya Nomoto,Masato Sakano,Kyoko Ishizaka,Ryotaro Arita,Shintaro Ishiwata###
(1223887, 1223888)
Neutron diffraction measurements show that the Eu spins, which orderferromagnetically within each layer, are collinearly modulated(up-up-down-down) along the hexagonal axis below T<missing VAR>N1, followed by the partialemergence of helical spin modulation below T<missing VAR>N2 (6 K).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N2
###Competing spin modulations in a magnetically frustrated semimetal EuCuSb|Hidefumi Takahashi,Kai Aono,Yusuke Nambu,Ryoji Kiyanagi,Takuya Nomoto,Masato Sakano,Kyoko Ishizaka,Ryotaro Arita,Shintaro Ishiwata###
(1223913, 1223914)
Neutron diffraction measurements show that the Eu spins, which orderferromagnetically within each layer, are collinearly modulated(up-up-down-down) along the hexagonal axis below T<missing VAR>N1, followed by the partialemergence of helical spin modulation below T<missing VAR>N2 (6 K).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Competing spin modulations in a magnetically frustrated semimetal EuCuSb|Hidefumi Takahashi,Kai Aono,Yusuke Nambu,Ryoji Kiyanagi,Takuya Nomoto,Masato Sakano,Kyoko Ishizaka,Ryotaro Arita,Shintaro Ishiwata###
(1223919, 1223919)
Neutron diffraction measurements show that the Eu spins, which orderferromagnetically within each layer, are collinearly modulated(up-up-down-down) along the hexagonal axis below T<missing VAR>N1, followed by the partialemergence of helical spin modulation below T<missing VAR>N2 (6 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TmFeO3
###Electrical detection of the spin reorientation transition in antiferromagnetic TmFeO$_3$ thin films by spin Hall magnetoresistance|Sven Becker,Andrew Ross,Romain Lebrun,Lorenzo Baldrati,Shilei Ding,Felix Schreiber,Francesco Maccherozzi,Dirk Backes,Mathias Kläui,Gerhard Jakob###
(1224016, 1224019)
Electrical detection of the spin reorientation transition in antiferromagnetic TmFeO3 thin films by spin Hall magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 82, 'K', 1],[61.0, 94, 'K', 1],[104.0, 82, 'K', 2],[117.0, 94, 'K', 2]

TmFeO3
###Electrical detection of the spin reorientation transition in antiferromagnetic TmFeO$_3$ thin films by spin Hall magnetoresistance|Sven Becker,Andrew Ross,Romain Lebrun,Lorenzo Baldrati,Shilei Ding,Felix Schreiber,Francesco Maccherozzi,Dirk Backes,Mathias Kläui,Gerhard Jakob###
(1224034, 1224037)
 TmFeO3 (T<missing VAR>FO) is a canted antiferromagnet that undergoes a spinreorientation transition (SRT) with temperature between 82 K and 94 K in singlecrystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 82, 'K', 0],[43.0, 94, 'K', 0],[86.0, 82, 'K', 1],[99.0, 94, 'K', 1]

O
###Electrical detection of the spin reorientation transition in antiferromagnetic TmFeO$_3$ thin films by spin Hall magnetoresistance|Sven Becker,Andrew Ross,Romain Lebrun,Lorenzo Baldrati,Shilei Ding,Felix Schreiber,Francesco Maccherozzi,Dirk Backes,Mathias Kläui,Gerhard Jakob###
(1224042, 1224042)
 TmFeO3 (T<missing VAR>FO) is a canted antiferromagnet that undergoes a spinreorientation transition (SRT) with temperature between 82 K and 94 K in singlecrystals.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 82, 'K', 0],[38.0, 94, 'K', 0],[81.0, 82, 'K', 1],[94.0, 94, 'K', 1]

S
###Electrical detection of the spin reorientation transition in antiferromagnetic TmFeO$_3$ thin films by spin Hall magnetoresistance|Sven Becker,Andrew Ross,Romain Lebrun,Lorenzo Baldrati,Shilei Ding,Felix Schreiber,Francesco Maccherozzi,Dirk Backes,Mathias Kläui,Gerhard Jakob###
(1224067, 1224067)
 TmFeO3 (T<missing VAR>FO) is a canted antiferromagnet that undergoes a spinreorientation transition (SRT) with temperature between 82 K and 94 K in singlecrystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 82, 'K', 0],[13.0, 94, 'K', 0],[56.0, 82, 'K', 1],[69.0, 94, 'K', 1]

In
###Electrical detection of the spin reorientation transition in antiferromagnetic TmFeO$_3$ thin films by spin Hall magnetoresistance|Sven Becker,Andrew Ross,Romain Lebrun,Lorenzo Baldrati,Shilei Ding,Felix Schreiber,Francesco Maccherozzi,Dirk Backes,Mathias Kläui,Gerhard Jakob###
(1224090, 1224090)
 In this temperature region, the Neel vector continuously rotatesfrom the crystallographic c<missing VAR>-axis (below 82 K) to the a-axis (above 94 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 82, 'K', 1],[10.0, 94, 'K', 1],[33.0, 82, 'K', 0],[46.0, 94, 'K', 0]

N
###Electrical detection of the spin reorientation transition in antiferromagnetic TmFeO$_3$ thin films by spin Hall magnetoresistance|Sven Becker,Andrew Ross,Romain Lebrun,Lorenzo Baldrati,Shilei Ding,Felix Schreiber,Francesco Maccherozzi,Dirk Backes,Mathias Kläui,Gerhard Jakob###
(1224101, 1224101)
 In this temperature region, the Neel vector continuously rotatesfrom the crystallographic c<missing VAR>-axis (below 82 K) to the a-axis (above 94 K).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 82, 'K', 1],[21.0, 94, 'K', 1],[22.0, 82, 'K', 0],[35.0, 94, 'K', 0]

S
###Electrical detection of the spin reorientation transition in antiferromagnetic TmFeO$_3$ thin films by spin Hall magnetoresistance|Sven Becker,Andrew Ross,Romain Lebrun,Lorenzo Baldrati,Shilei Ding,Felix Schreiber,Francesco Maccherozzi,Dirk Backes,Mathias Kläui,Gerhard Jakob###
(1224143, 1224143)
The SRT allows for a temperature control of distinct antiferromagnetic stateswithout the need for a magnetic field, making it apt for applications workingat T<missing VAR>Hz frequencies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 82, 'K', 2],[63.0, 94, 'K', 2],[20.0, 82, 'K', 1],[7.0, 94, 'K', 1]

FO
###Electrical detection of the spin reorientation transition in antiferromagnetic TmFeO$_3$ thin films by spin Hall magnetoresistance|Sven Becker,Andrew Ross,Romain Lebrun,Lorenzo Baldrati,Shilei Ding,Felix Schreiber,Francesco Maccherozzi,Dirk Backes,Mathias Kläui,Gerhard Jakob###
(1224216, 1224217)
 For device applications, thin films of T<missing VAR>FO are required aswell as an electrical technique for reading out the magnetic state.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 82, 'K', 3],[136.0, 94, 'K', 3],[93.0, 82, 'K', 2],[80.0, 94, 'K', 2]

FO
###Electrical detection of the spin reorientation transition in antiferromagnetic TmFeO$_3$ thin films by spin Hall magnetoresistance|Sven Becker,Andrew Ross,Romain Lebrun,Lorenzo Baldrati,Shilei Ding,Felix Schreiber,Francesco Maccherozzi,Dirk Backes,Mathias Kläui,Gerhard Jakob###
(1224261, 1224262)
 Here wedemonstrate that orthorhombic T<missing VAR>FO thin films can be grown by pulsed laserdeposition and the detection of the SRT in T<missing VAR>FO thin films can be accessed bymaking use of the all electrical spin Hall magnetoresistance (SMR), in goodagreement for the temperature range where the SRT occurs.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[184.0, 82, 'K', 4],[181.0, 94, 'K', 4],[138.0, 82, 'K', 3],[125.0, 94, 'K', 3]

S
###Electrical detection of the spin reorientation transition in antiferromagnetic TmFeO$_3$ thin films by spin Hall magnetoresistance|Sven Becker,Andrew Ross,Romain Lebrun,Lorenzo Baldrati,Shilei Ding,Felix Schreiber,Francesco Maccherozzi,Dirk Backes,Mathias Kläui,Gerhard Jakob###
(1224293, 1224293)
 Here wedemonstrate that orthorhombic T<missing VAR>FO thin films can be grown by pulsed laserdeposition and the detection of the SRT in T<missing VAR>FO thin films can be accessed bymaking use of the all electrical spin Hall magnetoresistance (SMR), in goodagreement for the temperature range where the SRT occurs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[216.0, 82, 'K', 4],[213.0, 94, 'K', 4],[170.0, 82, 'K', 3],[157.0, 94, 'K', 3]

FO
###Electrical detection of the spin reorientation transition in antiferromagnetic TmFeO$_3$ thin films by spin Hall magnetoresistance|Sven Becker,Andrew Ross,Romain Lebrun,Lorenzo Baldrati,Shilei Ding,Felix Schreiber,Francesco Maccherozzi,Dirk Backes,Mathias Kläui,Gerhard Jakob###
(1224300, 1224301)
 Here wedemonstrate that orthorhombic T<missing VAR>FO thin films can be grown by pulsed laserdeposition and the detection of the SRT in T<missing VAR>FO thin films can be accessed bymaking use of the all electrical spin Hall magnetoresistance (SMR), in goodagreement for the temperature range where the SRT occurs.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[223.0, 82, 'K', 4],[220.0, 94, 'K', 4],[177.0, 82, 'K', 3],[164.0, 94, 'K', 3]

S
###Electrical detection of the spin reorientation transition in antiferromagnetic TmFeO$_3$ thin films by spin Hall magnetoresistance|Sven Becker,Andrew Ross,Romain Lebrun,Lorenzo Baldrati,Shilei Ding,Felix Schreiber,Francesco Maccherozzi,Dirk Backes,Mathias Kläui,Gerhard Jakob###
(1224335, 1224335)
 Here wedemonstrate that orthorhombic T<missing VAR>FO thin films can be grown by pulsed laserdeposition and the detection of the SRT in T<missing VAR>FO thin films can be accessed bymaking use of the all electrical spin Hall magnetoresistance (SMR), in goodagreement for the temperature range where the SRT occurs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[258.0, 82, 'K', 4],[255.0, 94, 'K', 4],[212.0, 82, 'K', 3],[199.0, 94, 'K', 3]

S
###Electrical detection of the spin reorientation transition in antiferromagnetic TmFeO$_3$ thin films by spin Hall magnetoresistance|Sven Becker,Andrew Ross,Romain Lebrun,Lorenzo Baldrati,Shilei Ding,Felix Schreiber,Francesco Maccherozzi,Dirk Backes,Mathias Kläui,Gerhard Jakob###
(1224360, 1224360)
 Here wedemonstrate that orthorhombic T<missing VAR>FO thin films can be grown by pulsed laserdeposition and the detection of the SRT in T<missing VAR>FO thin films can be accessed bymaking use of the all electrical spin Hall magnetoresistance (SMR), in goodagreement for the temperature range where the SRT occurs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[283.0, 82, 'K', 4],[280.0, 94, 'K', 4],[237.0, 82, 'K', 3],[224.0, 94, 'K', 3]

S
###Electrical detection of the spin reorientation transition in antiferromagnetic TmFeO$_3$ thin films by spin Hall magnetoresistance|Sven Becker,Andrew Ross,Romain Lebrun,Lorenzo Baldrati,Shilei Ding,Felix Schreiber,Francesco Maccherozzi,Dirk Backes,Mathias Kläui,Gerhard Jakob###
(1224386, 1224386)
 Our resultsdemonstrate that one can electrically detect the SRT in insulators.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[309.0, 82, 'K', 5],[306.0, 94, 'K', 5],[263.0, 82, 'K', 4],[250.0, 94, 'K', 4]

U
###Chirality induced Giant Unidirectional Magnetoresistance in Twisted Bilayer Graphene|Yizhou Liu,Tobias Holder,Binghai Yan###
(1224510, 1224510)
 We find by quantum transport calculations thatthe chirality leads to a giant unidirectional magnetoresistance (UMR) in TBG,where the unidirectionality refers to the resistance change under the reversalof the direction of the current or magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 20, '%', 2],[121.0, 10, 'T', 2]

U
###Chirality induced Giant Unidirectional Magnetoresistance in Twisted Bilayer Graphene|Yizhou Liu,Tobias Holder,Binghai Yan###
(1224589, 1224589)
 The UMR increases quickly upon reducing thetwist angle and reaches about 20% for an angle of 1.5circ in a 10 Tin-plane magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 20, '%', 0],[42.0, 10, 'T', 0]

U
###Chirality induced Giant Unidirectional Magnetoresistance in Twisted Bilayer Graphene|Yizhou Liu,Tobias Holder,Binghai Yan###
(1224695, 1224695)
 We propose the band structure topology (asymmetry),which leads to a direction-sensitive mean free path, as a useful way toanticipate the UMR effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 20, '%', 1],[64.0, 10, 'T', 1]

U
###Chirality induced Giant Unidirectional Magnetoresistance in Twisted Bilayer Graphene|Yizhou Liu,Tobias Holder,Binghai Yan###
(1224704, 1224704)
 The UMR provides a probe for chirality and bandflatness in the twisted bilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 20, '%', 2],[73.0, 10, 'T', 2]

ZrTe5
###Thermodynamically Induced Transport Anomaly in Dilute Metals ZrTe$_5$ and HfTe$_5$|Chenjie Wang###
(1225438, 1225440)
Thermodynamically Induced Transport Anomaly in Dilute Metals ZrTe5 and HfTe5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HfTe5
###Thermodynamically Induced Transport Anomaly in Dilute Metals ZrTe$_5$ and HfTe$_5$|Chenjie Wang###
(1225444, 1225446)
Thermodynamically Induced Transport Anomaly in Dilute Metals ZrTe5 and HfTe5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZrTe5
###Thermodynamically Induced Transport Anomaly in Dilute Metals ZrTe$_5$ and HfTe$_5$|Chenjie Wang###
(1225467, 1225469)
 A 40-year-old puzzle in transition metal pentatellurides ZrTe5 andHfTe5 is the anomalous peak in the temperature dependence of thelongitudinal resistivity, which is accompanied by sign reverses of the Hall andSeebeck coefficients.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HfTe5
###Thermodynamically Induced Transport Anomaly in Dilute Metals ZrTe$_5$ and HfTe$_5$|Chenjie Wang###
(1225474, 1225476)
 A 40-year-old puzzle in transition metal pentatellurides ZrTe5 andHfTe5 is the anomalous peak in the temperature dependence of thelongitudinal resistivity, which is accompanied by sign reverses of the Hall andSeebeck coefficients.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

VC
###Large angle precession of magnetization maintained by a microwave voltage|Hiroshi Imamura,Rie Matsumoto###
(1225798, 1225799)
 The microwave voltage induces the oscillating anisotropyfield through the voltage controlled magnetic anisotropy (VCM<missing VAR>A) effect, andthen stimulates the magnetization.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

VC
###Large angle precession of magnetization maintained by a microwave voltage|Hiroshi Imamura,Rie Matsumoto###
(1225972, 1225973)
 The results are useful for development of theVCM<missing VAR>A-based energy-efficient spintronics devices using magnetization precessionsuch as a VCM<missing VAR>A-based magnetoresistive random access memory and a nano-scalemicrowave magnetic field generator.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

VC
###Large angle precession of magnetization maintained by a microwave voltage|Hiroshi Imamura,Rie Matsumoto###
(1226000, 1226001)
 The results are useful for development of theVCM<missing VAR>A-based energy-efficient spintronics devices using magnetization precessionsuch as a VCM<missing VAR>A-based magnetoresistive random access memory and a nano-scalemicrowave magnetic field generator.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ti/Ti
###Electrical conduction of Ti/TiOx/Ti structures at low temperatures and high magnetic fields|Marianna Batkovaa,Ivan Batko###
(1226047, 1226049)
Electrical conduction of Ti/TiOx/Ti structures at low temperatures and high magnetic fields.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[106.0, 300, 'K', 2],[109.0, 30, 'K', 2],[256.0, 9, 'T', 4]

Ti
###Electrical conduction of Ti/TiOx/Ti structures at low temperatures and high magnetic fields|Marianna Batkovaa,Ivan Batko###
(1226052, 1226052)
Electrical conduction of Ti/TiOx/Ti structures at low temperatures and high magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 300, 'K', 2],[106.0, 30, 'K', 2],[253.0, 9, 'T', 4]

Ti/Ti
###Electrical conduction of Ti/TiOx/Ti structures at low temperatures and high magnetic fields|Marianna Batkovaa,Ivan Batko###
(1226087, 1226089)
 We present results of electrical conduction studies of Ti/TiOx/Ti planarstructures prepared by tip-induced local anodic oxidation (L<missing VAR>AO) of titaniumthin films.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[66.0, 300, 'K', 1],[69.0, 30, 'K', 1],[216.0, 9, 'T', 3]

Ti
###Electrical conduction of Ti/TiOx/Ti structures at low temperatures and high magnetic fields|Marianna Batkovaa,Ivan Batko###
(1226092, 1226092)
 We present results of electrical conduction studies of Ti/TiOx/Ti planarstructures prepared by tip-induced local anodic oxidation (L<missing VAR>AO) of titaniumthin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 300, 'K', 1],[66.0, 30, 'K', 1],[213.0, 9, 'T', 3]

O
###Electrical conduction of Ti/TiOx/Ti structures at low temperatures and high magnetic fields|Marianna Batkovaa,Ivan Batko###
(1226116, 1226116)
 We present results of electrical conduction studies of Ti/TiOx/Ti planarstructures prepared by tip-induced local anodic oxidation (L<missing VAR>AO) of titaniumthin films.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 300, 'K', 1],[42.0, 30, 'K', 1],[189.0, 9, 'T', 3]

I
###Electrical conduction of Ti/TiOx/Ti structures at low temperatures and high magnetic fields|Marianna Batkovaa,Ivan Batko###
(1226143, 1226143)
 The prepared structures have shown almost linear I-V curves attemperatures between 300 K and 30 K, and only slight deviation from linearbehaviour at lower temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 300, 'K', 0],[15.0, 30, 'K', 0],[162.0, 9, 'T', 2]

V
###Electrical conduction of Ti/TiOx/Ti structures at low temperatures and high magnetic fields|Marianna Batkovaa,Ivan Batko###
(1226145, 1226145)
 The prepared structures have shown almost linear I-V curves attemperatures between 300 K and 30 K, and only slight deviation from linearbehaviour at lower temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 300, 'K', 0],[13.0, 30, 'K', 0],[160.0, 9, 'T', 2]

Co/Gd
###Picosecond Switching of Optomagnetic Tunnel Junctions|Luding Wang,Houyi Cheng,Pingzhi Li,Yang Liu,Youri L. W. van Hees,Reinoud Lavrijsen,Xiaoyang Lin,Kaihua Cao,Bert Koopmans,Weisheng Zhao###
(1226579, 1226581)
 This composite device incorporates anall-optically switchable Co/Gd bilayer coupled to a CoFeB/MgO-basedperpendicular magnetic tunnel junction by the Ruderman-Kittel-Kasuya-Yosidainteraction.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[106.0, 4, ',', 3]

CoFeB/MgO
###Picosecond Switching of Optomagnetic Tunnel Junctions|Luding Wang,Houyi Cheng,Pingzhi Li,Yang Liu,Youri L. W. van Hees,Reinoud Lavrijsen,Xiaoyang Lin,Kaihua Cao,Bert Koopmans,Weisheng Zhao###
(1226591, 1226596)
 This composite device incorporates anall-optically switchable Co/Gd bilayer coupled to a CoFeB/MgO-basedperpendicular magnetic tunnel junction by the Ruderman-Kittel-Kasuya-Yosidainteraction.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[118.0, 4, ',', 3]

F
###Topological Mott transition in a Weyl-Hubbard model with dynamical mean-field theory|Bernhard Irsigler,Tobias Grass,Jun-Hui Zheng,Mathieu Barbier,Walter Hofstetter###
(1226936, 1226936)
 We investigate an experimentally motivated model for Weylphysics of cold atoms in optical lattices, with the main focus on interactioneffects and topological properties by means of dynamical mean-field theory(DMFT).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Topological Mott transition in a Weyl-Hubbard model with dynamical mean-field theory|Bernhard Irsigler,Tobias Grass,Jun-Hui Zheng,Mathieu Barbier,Walter Hofstetter###
(1227104, 1227104)
Our study is complementary to recent studies of Weyl semimetals with DMFT<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BaFe2S3
###Dichotomy Between Orbital and Magnetic Nematic Instabilities in BaFe2S3|Suguru Hosoi,Takuya Aoyama,Kousuke Ishida,Yuta Mizukami,Kazuki Hashizume,Satoshi Imaizumi,Yoshinori Imai,Kenya Ohgushi,Yusuke Nambu,Motoi Kimata,Shojiro Kimura,Takasada Shibauchi###
(1227132, 1227136)
Dichotomy Between Orbital and Magnetic Nematic Instabilities in BaFe2S3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 180, 'K', 2]

BaFe2S3
###Dichotomy Between Orbital and Magnetic Nematic Instabilities in BaFe2S3|Suguru Hosoi,Takuya Aoyama,Kousuke Ishida,Yuta Mizukami,Kazuki Hashizume,Satoshi Imaizumi,Yoshinori Imai,Kenya Ohgushi,Yusuke Nambu,Motoi Kimata,Shojiro Kimura,Takasada Shibauchi###
(1227201, 1227205)
 The iron-based ladder material BaFe2S3,which superconducts under pressure, exhibits antiferromagnetic order below T<missing VAR>N 117K and a weak resistivity anomaly at T<missing VAR>  180K, whose nature remains elusive.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 180, 'K', 0]

N
###Dichotomy Between Orbital and Magnetic Nematic Instabilities in BaFe2S3|Suguru Hosoi,Takuya Aoyama,Kousuke Ishida,Yuta Mizukami,Kazuki Hashizume,Satoshi Imaizumi,Yoshinori Imai,Kenya Ohgushi,Yusuke Nambu,Motoi Kimata,Shojiro Kimura,Takasada Shibauchi###
(1227227, 1227227)
 The iron-based ladder material BaFe2S3,which superconducts under pressure, exhibits antiferromagnetic order below T<missing VAR>N 117K and a weak resistivity anomaly at T<missing VAR>  180K, whose nature remains elusive.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 180, 'K', 0]

K
###Dichotomy Between Orbital and Magnetic Nematic Instabilities in BaFe2S3|Suguru Hosoi,Takuya Aoyama,Kousuke Ishida,Yuta Mizukami,Kazuki Hashizume,Satoshi Imaizumi,Yoshinori Imai,Kenya Ohgushi,Yusuke Nambu,Motoi Kimata,Shojiro Kimura,Takasada Shibauchi###
(1227232, 1227232)
 The iron-based ladder material BaFe2S3,which superconducts under pressure, exhibits antiferromagnetic order below T<missing VAR>N 117K and a weak resistivity anomaly at T<missing VAR>  180K, whose nature remains elusive.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 180, 'K', 0]

BaFe2S3
###Dichotomy Between Orbital and Magnetic Nematic Instabilities in BaFe2S3|Suguru Hosoi,Takuya Aoyama,Kousuke Ishida,Yuta Mizukami,Kazuki Hashizume,Satoshi Imaizumi,Yoshinori Imai,Kenya Ohgushi,Yusuke Nambu,Motoi Kimata,Shojiro Kimura,Takasada Shibauchi###
(1227292, 1227296)
Here we report angle-resolved magnetoresistance (MR) and elastoresistance (ER)measurements in BaFe2S3, which reveal distinct changes at T<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 180, 'K', 1]

In
###Dichotomy Between Orbital and Magnetic Nematic Instabilities in BaFe2S3|Suguru Hosoi,Takuya Aoyama,Kousuke Ishida,Yuta Mizukami,Kazuki Hashizume,Satoshi Imaizumi,Yoshinori Imai,Kenya Ohgushi,Yusuke Nambu,Motoi Kimata,Shojiro Kimura,Takasada Shibauchi###
(1227421, 1227421)
 In contrast to the cooperative nematic orders in spin and orbitalchannels in iron pnictides, the present competing orders can provide a newplatform to identify the separate roles of orbital and magnetic fluctuations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 180, 'K', 4]

Bi2Ir2O7/Dy2Ti2O7
###Anomalous Magnetoresistance by Breaking Ice Rule in Bi2Ir2O7/Dy2Ti2O7 Heterostructure|H. Zhang,C. K. Xing,K. Noordhoek,Z. Liu,T. H. Zhao,L. Horák,Q. Huang,L. Hao,J. Yang,S. Pandey,E. Dagotto,Z. Jiang,J. H. Chu,Y. Xin,E. S. Choi,H. D. Zhou,J. Liu###
(1227515, 1227527)
Anomalous Magnetoresistance by Breaking Ice Rule in Bi2Ir2O7/Dy2Ti2O7 Heterostructure.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Bi2Ir2O7/Dy2Ti2O7
###Anomalous Magnetoresistance by Breaking Ice Rule in Bi2Ir2O7/Dy2Ti2O7 Heterostructure|H. Zhang,C. K. Xing,K. Noordhoek,Z. Liu,T. H. Zhao,L. Horák,Q. Huang,L. Hao,J. Yang,S. Pandey,E. Dagotto,Z. Jiang,J. H. Chu,Y. Xin,E. S. Choi,H. D. Zhou,J. Liu###
(1227729, 1227741)
 Here, we showthat, by designing a Bi2Ir2O7/Dy2Ti2O7 heterostructure, the breaking of thespin ice rule in insulating Dy2Ti2O7 can lead to a charge response in theBi2Ir2O7 conducting layer that can be detected as anomalous magnetoresistance.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Dy2Ti2O7
###Anomalous Magnetoresistance by Breaking Ice Rule in Bi2Ir2O7/Dy2Ti2O7 Heterostructure|H. Zhang,C. K. Xing,K. Noordhoek,Z. Liu,T. H. Zhao,L. Horák,Q. Huang,L. Hao,J. Yang,S. Pandey,E. Dagotto,Z. Jiang,J. H. Chu,Y. Xin,E. S. Choi,H. D. Zhou,J. Liu###
(1227765, 1227770)
 Here, we showthat, by designing a Bi2Ir2O7/Dy2Ti2O7 heterostructure, the breaking of thespin ice rule in insulating Dy2Ti2O7 can lead to a charge response in theBi2Ir2O7 conducting layer that can be detected as anomalous magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6363636363636364,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Ir2O7
###Anomalous Magnetoresistance by Breaking Ice Rule in Bi2Ir2O7/Dy2Ti2O7 Heterostructure|H. Zhang,C. K. Xing,K. Noordhoek,Z. Liu,T. H. Zhao,L. Horák,Q. Huang,L. Hao,J. Yang,S. Pandey,E. Dagotto,Z. Jiang,J. H. Chu,Y. Xin,E. S. Choi,H. D. Zhou,J. Liu###
(1227789, 1227794)
 Here, we showthat, by designing a Bi2Ir2O7/Dy2Ti2O7 heterostructure, the breaking of thespin ice rule in insulating Dy2Ti2O7 can lead to a charge response in theBi2Ir2O7 conducting layer that can be detected as anomalous magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6363636363636364,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Unconventional Hall effect and its variation with Co-doping in van der Waals Fe3GeTe2|Rajeswari Roy Chowdhury,Samik DuttaGupta,Chandan Patra,Oleg A. Tretiakov,Sudarshan Sharma,Shunsuke Fukami,Hideo Ohno,Ravi Prakash Singh###
(1227900, 1227900)
Unconventional Hall effect and its variation with Co-doping in van der Waals Fe3GeTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 2, 'D', 2],[299.0, 2, 'D', 5]

Fe3GeTe2
###Unconventional Hall effect and its variation with Co-doping in van der Waals Fe3GeTe2|Rajeswari Roy Chowdhury,Samik DuttaGupta,Chandan Patra,Oleg A. Tretiakov,Sudarshan Sharma,Shunsuke Fukami,Hideo Ohno,Ravi Prakash Singh###
(1227912, 1227916)
Unconventional Hall effect and its variation with Co-doping in van der Waals Fe3GeTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 2, 'D', 2],[283.0, 2, 'D', 5]

W
###Unconventional Hall effect and its variation with Co-doping in van der Waals Fe3GeTe2|Rajeswari Roy Chowdhury,Samik DuttaGupta,Chandan Patra,Oleg A. Tretiakov,Sudarshan Sharma,Shunsuke Fukami,Hideo Ohno,Ravi Prakash Singh###
(1227936, 1227936)
 Two-dimensional (2D) van der Waals (vdW) magnetic materials have attracted alot of attention owing to the stabilization of long-range magnetic order downto atomic dimensions, and the prospect of novel spintronic devices with uniquefunctionalities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 2, 'D', 1],[263.0, 2, 'D', 4]

W
###Unconventional Hall effect and its variation with Co-doping in van der Waals Fe3GeTe2|Rajeswari Roy Chowdhury,Samik DuttaGupta,Chandan Patra,Oleg A. Tretiakov,Sudarshan Sharma,Shunsuke Fukami,Hideo Ohno,Ravi Prakash Singh###
(1228044, 1228044)
 The clarification of the magnetoresistive properties and itscorrelation to the underlying magnetic configurations is essential for 2DvdW-based spintronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 2, 'D', 0],[155.0, 2, 'D', 3]

Co
###Unconventional Hall effect and its variation with Co-doping in van der Waals Fe3GeTe2|Rajeswari Roy Chowdhury,Samik DuttaGupta,Chandan Patra,Oleg A. Tretiakov,Sudarshan Sharma,Shunsuke Fukami,Hideo Ohno,Ravi Prakash Singh###
(1228062, 1228062)
 Here, the effect of Co-doping on the magnetic andmagnetotransport properties of Fe3GeTe2 have been investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 2, 'D', 1],[137.0, 2, 'D', 2]

Fe3GeTe2
###Unconventional Hall effect and its variation with Co-doping in van der Waals Fe3GeTe2|Rajeswari Roy Chowdhury,Samik DuttaGupta,Chandan Patra,Oleg A. Tretiakov,Sudarshan Sharma,Shunsuke Fukami,Hideo Ohno,Ravi Prakash Singh###
(1228081, 1228085)
 Here, the effect of Co-doping on the magnetic andmagnetotransport properties of Fe3GeTe2 have been investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 2, 'D', 1],[114.0, 2, 'D', 2]

Co
###Unconventional Hall effect and its variation with Co-doping in van der Waals Fe3GeTe2|Rajeswari Roy Chowdhury,Samik DuttaGupta,Chandan Patra,Oleg A. Tretiakov,Sudarshan Sharma,Shunsuke Fukami,Hideo Ohno,Ravi Prakash Singh###
(1228124, 1228124)
Magnetotransport measurements reveal an unusual Hall effect behavior whosestrength was considerably modified by Co-doping and attributed to arise fromthe underlying complicated spin textures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 2, 'D', 2],[75.0, 2, 'D', 1]

W
###Unconventional Hall effect and its variation with Co-doping in van der Waals Fe3GeTe2|Rajeswari Roy Chowdhury,Samik DuttaGupta,Chandan Patra,Oleg A. Tretiakov,Sudarshan Sharma,Shunsuke Fukami,Hideo Ohno,Ravi Prakash Singh###
(1228202, 1228202)
 The present results provide a clue totailoring of the underlying interactions necessary for the realization of avariety of unconventional spin textures for 2D vdW FM<missing VAR>-based spintronics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 2, 'D', 3],[3.0, 2, 'D', 0]

F
###Unconventional Hall effect and its variation with Co-doping in van der Waals Fe3GeTe2|Rajeswari Roy Chowdhury,Samik DuttaGupta,Chandan Patra,Oleg A. Tretiakov,Sudarshan Sharma,Shunsuke Fukami,Hideo Ohno,Ravi Prakash Singh###
(1228204, 1228204)
 The present results provide a clue totailoring of the underlying interactions necessary for the realization of avariety of unconventional spin textures for 2D vdW FM<missing VAR>-based spintronics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 2, 'D', 3],[5.0, 2, 'D', 0]

YBi
###Direct evidence of electron-hole compensation for XMR in topologically trivial YBi|Shaozhu Xiao,Yinxiang Li,Yong Li,Xiufu Yang,Shiju Zhang,Wei Liu,Xianxin Wu,Bin Li,Masashi Arita,Kenya Shimada,Youguo Shi,Shaolong He###
(1228244, 1228245)
Direct evidence of electron-hole compensation for XMR in topologically trivial YBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YBi
###Direct evidence of electron-hole compensation for XMR in topologically trivial YBi|Shaozhu Xiao,Yinxiang Li,Yong Li,Xiufu Yang,Shiju Zhang,Wei Liu,Xianxin Wu,Bin Li,Masashi Arita,Kenya Shimada,Youguo Shi,Shaolong He###
(1228367, 1228368)
 YBi is a typical rare earth monopnictide exhibiting XMR, and expectedto have a nontrivial electronic structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Direct evidence of electron-hole compensation for XMR in topologically trivial YBi|Shaozhu Xiao,Yinxiang Li,Yong Li,Xiufu Yang,Shiju Zhang,Wei Liu,Xianxin Wu,Bin Li,Masashi Arita,Kenya Shimada,Youguo Shi,Shaolong He###
(1228407, 1228407)
 In this work, we performed a directinvestigation of the electronic structure of YBi by combining angle resolvedphotoemission spectroscopy and theoretical calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YBi
###Direct evidence of electron-hole compensation for XMR in topologically trivial YBi|Shaozhu Xiao,Yinxiang Li,Yong Li,Xiufu Yang,Shiju Zhang,Wei Liu,Xianxin Wu,Bin Li,Masashi Arita,Kenya Shimada,Youguo Shi,Shaolong He###
(1228435, 1228436)
 In this work, we performed a directinvestigation of the electronic structure of YBi by combining angle resolvedphotoemission spectroscopy and theoretical calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YBi
###Direct evidence of electron-hole compensation for XMR in topologically trivial YBi|Shaozhu Xiao,Yinxiang Li,Yong Li,Xiufu Yang,Shiju Zhang,Wei Liu,Xianxin Wu,Bin Li,Masashi Arita,Kenya Shimada,Youguo Shi,Shaolong He###
(1228467, 1228468)
 Our results show thatYBi is topologically trivial without the expected band inversion, and they ruleout the topological effect as the cause of XMR in YBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YBi
###Direct evidence of electron-hole compensation for XMR in topologically trivial YBi|Shaozhu Xiao,Yinxiang Li,Yong Li,Xiufu Yang,Shiju Zhang,Wei Liu,Xianxin Wu,Bin Li,Masashi Arita,Kenya Shimada,Youguo Shi,Shaolong He###
(1228516, 1228517)
 Our results show thatYBi is topologically trivial without the expected band inversion, and they ruleout the topological effect as the cause of XMR in YBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YBi
###Direct evidence of electron-hole compensation for XMR in topologically trivial YBi|Shaozhu Xiao,Yinxiang Li,Yong Li,Xiufu Yang,Shiju Zhang,Wei Liu,Xianxin Wu,Bin Li,Masashi Arita,Kenya Shimada,Youguo Shi,Shaolong He###
(1228548, 1228549)
 Furthermore, we directlyobserved perfect electron-hole compensation in the electronic structure of YBi,which could be the primary mechanism accounting for the XMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###A Single-Cycle MLP Classifier Using Analog MRAM-based Neurons and Synapses|Ramtin Zand###
(1228592, 1228592)
A Single-Cycle MLP Classifier Using Analog MRAM<missing VAR>-based Neurons and Synapses.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 12, 'x', 2]

In
###A Single-Cycle MLP Classifier Using Analog MRAM-based Neurons and Synapses|Ramtin Zand###
(1228614, 1228614)
 In this paper, spin-orbit torque (SOT) magnetoresistive random-access memory(MRAM) devices are leveraged to realize sigmoidal neurons and binarizedsynapses for a single-cycle analog in-memory computing (IM<missing VAR>C) architecture.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 12, 'x', 1]

SO
###A Single-Cycle MLP Classifier Using Analog MRAM-based Neurons and Synapses|Ramtin Zand###
(1228628, 1228629)
 In this paper, spin-orbit torque (SOT) magnetoresistive random-access memory(MRAM) devices are leveraged to realize sigmoidal neurons and binarizedsynapses for a single-cycle analog in-memory computing (IM<missing VAR>C) architecture.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 12, 'x', 1]

I
###A Single-Cycle MLP Classifier Using Analog MRAM-based Neurons and Synapses|Ramtin Zand###
(1228687, 1228687)
 In this paper, spin-orbit torque (SOT) magnetoresistive random-access memory(MRAM) devices are leveraged to realize sigmoidal neurons and binarizedsynapses for a single-cycle analog in-memory computing (IM<missing VAR>C) architecture.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 12, 'x', 1]

C
###A Single-Cycle MLP Classifier Using Analog MRAM-based Neurons and Synapses|Ramtin Zand###
(1228689, 1228689)
 In this paper, spin-orbit torque (SOT) magnetoresistive random-access memory(MRAM) devices are leveraged to realize sigmoidal neurons and binarizedsynapses for a single-cycle analog in-memory computing (IM<missing VAR>C) architecture.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 12, 'x', 1]

SO
###A Single-Cycle MLP Classifier Using Analog MRAM-based Neurons and Synapses|Ramtin Zand###
(1228703, 1228704)
First, an analog SOT-MRAM<missing VAR>-based neuron bitcell is proposed which achieves a 12xreduction in power-area-product compared to the previous most power- andarea-efficient analog sigmoidal neuron design.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 12, 'x', 0]

I
###A Single-Cycle MLP Classifier Using Analog MRAM-based Neurons and Synapses|Ramtin Zand###
(1228803, 1228803)
 Next, proposed neuron andsynapse bit cells are used within memory subarrays to form an analog IM<missing VAR>C-basedmultilayer perceptron (MLP) architecture for the M<missing VAR>NIST<missing VAR> pattern recognitionapplication.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 12, 'x', 1]

C
###A Single-Cycle MLP Classifier Using Analog MRAM-based Neurons and Synapses|Ramtin Zand###
(1228805, 1228805)
 Next, proposed neuron andsynapse bit cells are used within memory subarrays to form an analog IM<missing VAR>C-basedmultilayer perceptron (MLP) architecture for the M<missing VAR>NIST<missing VAR> pattern recognitionapplication.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 12, 'x', 1]

P
###A Single-Cycle MLP Classifier Using Analog MRAM-based Neurons and Synapses|Ramtin Zand###
(1228817, 1228817)
 Next, proposed neuron andsynapse bit cells are used within memory subarrays to form an analog IM<missing VAR>C-basedmultilayer perceptron (MLP) architecture for the M<missing VAR>NIST<missing VAR> pattern recognitionapplication.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 12, 'x', 1]

NIS
###A Single-Cycle MLP Classifier Using Analog MRAM-based Neurons and Synapses|Ramtin Zand###
(1228827, 1228829)
 Next, proposed neuron andsynapse bit cells are used within memory subarrays to form an analog IM<missing VAR>C-basedmultilayer perceptron (MLP) architecture for the M<missing VAR>NIST<missing VAR> pattern recognitionapplication.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 12, 'x', 1]

I
###A Single-Cycle MLP Classifier Using Analog MRAM-based Neurons and Synapses|Ramtin Zand###
(1228856, 1228856)
 The architecture-level results exhibit that our analog IM<missing VAR>Carchitecture achieves at least two and four orders of magnitude performanceimprovement compared to a mixed-signal analog/digital IM<missing VAR>C architecture and adigital G<missing VAR>PU implementation, respectively while realizing a comparableclassification accuracy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 12, 'x', 2]

C
###A Single-Cycle MLP Classifier Using Analog MRAM-based Neurons and Synapses|Ramtin Zand###
(1228858, 1228858)
 The architecture-level results exhibit that our analog IM<missing VAR>Carchitecture achieves at least two and four orders of magnitude performanceimprovement compared to a mixed-signal analog/digital IM<missing VAR>C architecture and adigital G<missing VAR>PU implementation, respectively while realizing a comparableclassification accuracy.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 12, 'x', 2]

I
###A Single-Cycle MLP Classifier Using Analog MRAM-based Neurons and Synapses|Ramtin Zand###
(1228900, 1228900)
 The architecture-level results exhibit that our analog IM<missing VAR>Carchitecture achieves at least two and four orders of magnitude performanceimprovement compared to a mixed-signal analog/digital IM<missing VAR>C architecture and adigital G<missing VAR>PU implementation, respectively while realizing a comparableclassification accuracy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 12, 'x', 2]

C
###A Single-Cycle MLP Classifier Using Analog MRAM-based Neurons and Synapses|Ramtin Zand###
(1228902, 1228902)
 The architecture-level results exhibit that our analog IM<missing VAR>Carchitecture achieves at least two and four orders of magnitude performanceimprovement compared to a mixed-signal analog/digital IM<missing VAR>C architecture and adigital G<missing VAR>PU implementation, respectively while realizing a comparableclassification accuracy.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 12, 'x', 2]

PU
###A Single-Cycle MLP Classifier Using Analog MRAM-based Neurons and Synapses|Ramtin Zand###
(1228914, 1228915)
 The architecture-level results exhibit that our analog IM<missing VAR>Carchitecture achieves at least two and four orders of magnitude performanceimprovement compared to a mixed-signal analog/digital IM<missing VAR>C architecture and adigital G<missing VAR>PU implementation, respectively while realizing a comparableclassification accuracy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
[187.0, 12, 'x', 2]

HfNiSn
###Importance of Electronic Correlation in the Intermetallic Half-Heusler Compounds|Minjie Lu,Hao Chen,Glenn Agnolet###
(1228977, 1228979)
 Low temperature scanning tunneling spectroscopy of HfNiSn shows a Vm(m < 1)zero bias anomaly around the Fermi level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 18, 'valence', 2]

V
###Importance of Electronic Correlation in the Intermetallic Half-Heusler Compounds|Minjie Lu,Hao Chen,Glenn Agnolet###
(1228985, 1228985)
 Low temperature scanning tunneling spectroscopy of HfNiSn shows a Vm(m < 1)zero bias anomaly around the Fermi level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 18, 'valence', 2]

ZrNiPb
###Importance of Electronic Correlation in the Intermetallic Half-Heusler Compounds|Minjie Lu,Hao Chen,Glenn Agnolet###
(1229092, 1229094)
 ZrNiPb shows ametal-like local density of states, whereas ZrCoSb and NbFeSb show a linear andV2 anomaly.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 18, 'valence', 1]

ZrCoSb
###Importance of Electronic Correlation in the Intermetallic Half-Heusler Compounds|Minjie Lu,Hao Chen,Glenn Agnolet###
(1229116, 1229118)
 ZrNiPb shows ametal-like local density of states, whereas ZrCoSb and NbFeSb show a linear andV2 anomaly.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 18, 'valence', 1]

NbFeSb
###Importance of Electronic Correlation in the Intermetallic Half-Heusler Compounds|Minjie Lu,Hao Chen,Glenn Agnolet###
(1229122, 1229124)
 ZrNiPb shows ametal-like local density of states, whereas ZrCoSb and NbFeSb show a linear andV2 anomaly.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 18, 'valence', 1]

V2
###Importance of Electronic Correlation in the Intermetallic Half-Heusler Compounds|Minjie Lu,Hao Chen,Glenn Agnolet###
(1229135, 1229136)
 ZrNiPb shows ametal-like local density of states, whereas ZrCoSb and NbFeSb show a linear andV2 anomaly.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 18, 'valence', 1]

HfNiSn
###Importance of Electronic Correlation in the Intermetallic Half-Heusler Compounds|Minjie Lu,Hao Chen,Glenn Agnolet###
(1229183, 1229185)
 By analyzing the magnetoresistance of HfNiSn, wedemonstrate that at low temperatures, electron-electron scattering dominates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 18, 'valence', 3]

YbCdSn
###Experimental and theoretical study of the correlated compound YbCdSn: Evidence for large magnetoresistance and mass enhancement|Antu Laha,P. Rambabu,V. Kanchana,L. Petit,Z. Szotek,Z. Hossain###
(1229286, 1229288)
Experimental and theoretical study of the correlated compound YbCdSn Evidence for large magnetoresistance and mass enhancement.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YbCdSn
###Experimental and theoretical study of the correlated compound YbCdSn: Evidence for large magnetoresistance and mass enhancement|Antu Laha,P. Rambabu,V. Kanchana,L. Petit,Z. Szotek,Z. Hossain###
(1229381, 1229383)
 Here, we report themagnetotransport properties of YbCdSn single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Yb2
###Experimental and theoretical study of the correlated compound YbCdSn: Evidence for large magnetoresistance and mass enhancement|Antu Laha,P. Rambabu,V. Kanchana,L. Petit,Z. Szotek,Z. Hossain###
(1229577, 1229578)
 Our band structure calculations ofYb2 state predict YbCdSn to be a topological nodal-line semimetal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YbCdSn
###Experimental and theoretical study of the correlated compound YbCdSn: Evidence for large magnetoresistance and mass enhancement|Antu Laha,P. Rambabu,V. Kanchana,L. Petit,Z. Szotek,Z. Hossain###
(1229584, 1229586)
 Our band structure calculations ofYb2 state predict YbCdSn to be a topological nodal-line semimetal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Spin-torque Dynamics for Noise Reduction in Vortex-based Sensors|Mafalda Jotta Garcia,Julien Moulin,Steffen Wittrock,Sumito Tsunegi,Kay Yakushiji,Akio Fukushima,Hitoshi Kubota,Shinji Yuasa,Ursula Ebels,Myriam Pannetier-Lecoeur,Claude Fermon,Romain Lebrun,Paolo Bortolotti,Aurélie Solignac,Vincent Cros###
(1229839, 1229839)
 Nevertheless, by activating the spin-transfer induced dynamicsof the vortex configuration, we observe a reduction of the 1/f<missing VAR> noise, close tothe values measured in the AP state, as the vortex core has a lower probabilityof pinning into defect sites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Dy3
###Magnetic order of Dy$^{3+}$ and Fe$^{3+}$ moments in antiferromagnetic DyFeO$_{3}$ probed by spin Hall magnetoresistance and spin Seebeck effect|G. R. Hoogeboom,T. Kuschel,G. E. W. Bauer,M. V. Mostovoy,A. V. Kimel,B. J. van Wees###
(1230007, 1230008)
Magnetic order of Dy3 and Fe3 moments in antiferromagnetic DyFeO3 probed by spin Hall magnetoresistance and spin Seebeck effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[254.0, 50, ',', 4],[288.0, 23, ',', 5],[306.0, 4, ',', 5]

Fe3
###Magnetic order of Dy$^{3+}$ and Fe$^{3+}$ moments in antiferromagnetic DyFeO$_{3}$ probed by spin Hall magnetoresistance and spin Seebeck effect|G. R. Hoogeboom,T. Kuschel,G. E. W. Bauer,M. V. Mostovoy,A. V. Kimel,B. J. van Wees###
(1230012, 1230013)
Magnetic order of Dy3 and Fe3 moments in antiferromagnetic DyFeO3 probed by spin Hall magnetoresistance and spin Seebeck effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[249.0, 50, ',', 4],[283.0, 23, ',', 5],[301.0, 4, ',', 5]

DyFeO3
###Magnetic order of Dy$^{3+}$ and Fe$^{3+}$ moments in antiferromagnetic DyFeO$_{3}$ probed by spin Hall magnetoresistance and spin Seebeck effect|G. R. Hoogeboom,T. Kuschel,G. E. W. Bauer,M. V. Mostovoy,A. V. Kimel,B. J. van Wees###
(1230021, 1230024)
Magnetic order of Dy3 and Fe3 moments in antiferromagnetic DyFeO3 probed by spin Hall magnetoresistance and spin Seebeck effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[238.0, 50, ',', 4],[272.0, 23, ',', 5],[290.0, 4, ',', 5]

S
###Magnetic order of Dy$^{3+}$ and Fe$^{3+}$ moments in antiferromagnetic DyFeO$_{3}$ probed by spin Hall magnetoresistance and spin Seebeck effect|G. R. Hoogeboom,T. Kuschel,G. E. W. Bauer,M. V. Mostovoy,A. V. Kimel,B. J. van Wees###
(1230058, 1230058)
 We report on spin Hall magnetoresistance (SMR) and spin Seebeck effect (SSE)in single crystal of the rare-earth antiferromagnet DyFeO3 with a thin Ptfilm contact.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[204.0, 50, ',', 3],[238.0, 23, ',', 4],[256.0, 4, ',', 4]

SS
###Magnetic order of Dy$^{3+}$ and Fe$^{3+}$ moments in antiferromagnetic DyFeO$_{3}$ probed by spin Hall magnetoresistance and spin Seebeck effect|G. R. Hoogeboom,T. Kuschel,G. E. W. Bauer,M. V. Mostovoy,A. V. Kimel,B. J. van Wees###
(1230072, 1230073)
 We report on spin Hall magnetoresistance (SMR) and spin Seebeck effect (SSE)in single crystal of the rare-earth antiferromagnet DyFeO3 with a thin Ptfilm contact.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[189.0, 50, ',', 3],[223.0, 23, ',', 4],[241.0, 4, ',', 4]

DyFeO3
###Magnetic order of Dy$^{3+}$ and Fe$^{3+}$ moments in antiferromagnetic DyFeO$_{3}$ probed by spin Hall magnetoresistance and spin Seebeck effect|G. R. Hoogeboom,T. Kuschel,G. E. W. Bauer,M. V. Mostovoy,A. V. Kimel,B. J. van Wees###
(1230094, 1230097)
 We report on spin Hall magnetoresistance (SMR) and spin Seebeck effect (SSE)in single crystal of the rare-earth antiferromagnet DyFeO3 with a thin Ptfilm contact.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 50, ',', 3],[199.0, 23, ',', 4],[217.0, 4, ',', 4]

Pt
###Magnetic order of Dy$^{3+}$ and Fe$^{3+}$ moments in antiferromagnetic DyFeO$_{3}$ probed by spin Hall magnetoresistance and spin Seebeck effect|G. R. Hoogeboom,T. Kuschel,G. E. W. Bauer,M. V. Mostovoy,A. V. Kimel,B. J. van Wees###
(1230105, 1230105)
 We report on spin Hall magnetoresistance (SMR) and spin Seebeck effect (SSE)in single crystal of the rare-earth antiferromagnet DyFeO3 with a thin Ptfilm contact.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 50, ',', 3],[191.0, 23, ',', 4],[209.0, 4, ',', 4]

S
###Magnetic order of Dy$^{3+}$ and Fe$^{3+}$ moments in antiferromagnetic DyFeO$_{3}$ probed by spin Hall magnetoresistance and spin Seebeck effect|G. R. Hoogeboom,T. Kuschel,G. E. W. Bauer,M. V. Mostovoy,A. V. Kimel,B. J. van Wees###
(1230127, 1230127)
 The angular shape and symmetry of the SMR at elevatedtemperatures reflect the antiferromagnetic order of the Fe3 moments asgoverned by the Zeeman energy, the magnetocrystalline anisotropy and theDzyaloshinskii-Moriya interaction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 50, ',', 2],[169.0, 23, ',', 3],[187.0, 4, ',', 3]

Fe3
###Magnetic order of Dy$^{3+}$ and Fe$^{3+}$ moments in antiferromagnetic DyFeO$_{3}$ probed by spin Hall magnetoresistance and spin Seebeck effect|G. R. Hoogeboom,T. Kuschel,G. E. W. Bauer,M. V. Mostovoy,A. V. Kimel,B. J. van Wees###
(1230150, 1230151)
 The angular shape and symmetry of the SMR at elevatedtemperatures reflect the antiferromagnetic order of the Fe3 moments asgoverned by the Zeeman energy, the magnetocrystalline anisotropy and theDzyaloshinskii-Moriya interaction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 50, ',', 2],[145.0, 23, ',', 3],[163.0, 4, ',', 3]

Dy3
###Magnetic order of Dy$^{3+}$ and Fe$^{3+}$ moments in antiferromagnetic DyFeO$_{3}$ probed by spin Hall magnetoresistance and spin Seebeck effect|G. R. Hoogeboom,T. Kuschel,G. E. W. Bauer,M. V. Mostovoy,A. V. Kimel,B. J. van Wees###
(1230233, 1230234)
 We interpret the observed linear dependenceof the signal on the magnetic field strength as evidence for field-inducedorder of the Dy3 moments up to room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 50, ',', 1],[62.0, 23, ',', 2],[80.0, 4, ',', 2]

At
###Magnetic order of Dy$^{3+}$ and Fe$^{3+}$ moments in antiferromagnetic DyFeO$_{3}$ probed by spin Hall magnetoresistance and spin Seebeck effect|G. R. Hoogeboom,T. Kuschel,G. E. W. Bauer,M. V. Mostovoy,A. V. Kimel,B. J. van Wees###
(1230247, 1230247)
 At and below the Morintemperature of 50,K, the SMR monitors the spin-reorientation phasetransition of Fe3 spins.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 50, ',', 0],[49.0, 23, ',', 1],[67.0, 4, ',', 1]

K
###Magnetic order of Dy$^{3+}$ and Fe$^{3+}$ moments in antiferromagnetic DyFeO$_{3}$ probed by spin Hall magnetoresistance and spin Seebeck effect|G. R. Hoogeboom,T. Kuschel,G. E. W. Bauer,M. V. Mostovoy,A. V. Kimel,B. J. van Wees###
(1230264, 1230264)
 At and below the Morintemperature of 50,K, the SMR monitors the spin-reorientation phasetransition of Fe3 spins.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 50, ',', 0],[32.0, 23, ',', 1],[50.0, 4, ',', 1]

S
###Magnetic order of Dy$^{3+}$ and Fe$^{3+}$ moments in antiferromagnetic DyFeO$_{3}$ probed by spin Hall magnetoresistance and spin Seebeck effect|G. R. Hoogeboom,T. Kuschel,G. E. W. Bauer,M. V. Mostovoy,A. V. Kimel,B. J. van Wees###
(1230269, 1230269)
 At and below the Morintemperature of 50,K, the SMR monitors the spin-reorientation phasetransition of Fe3 spins.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 50, ',', 0],[27.0, 23, ',', 1],[45.0, 4, ',', 1]

Fe3
###Magnetic order of Dy$^{3+}$ and Fe$^{3+}$ moments in antiferromagnetic DyFeO$_{3}$ probed by spin Hall magnetoresistance and spin Seebeck effect|G. R. Hoogeboom,T. Kuschel,G. E. W. Bauer,M. V. Mostovoy,A. V. Kimel,B. J. van Wees###
(1230288, 1230289)
 At and below the Morintemperature of 50,K, the SMR monitors the spin-reorientation phasetransition of Fe3 spins.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 50, ',', 0],[7.0, 23, ',', 1],[25.0, 4, ',', 1]

K
###Magnetic order of Dy$^{3+}$ and Fe$^{3+}$ moments in antiferromagnetic DyFeO$_{3}$ probed by spin Hall magnetoresistance and spin Seebeck effect|G. R. Hoogeboom,T. Kuschel,G. E. W. Bauer,M. V. Mostovoy,A. V. Kimel,B. J. van Wees###
(1230298, 1230298)
 Below 23,K, additional features emerge thatpersist below 4,K, the ordering temperature of the Dy3 magneticsublattice.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 50, ',', 1],[2.0, 23, ',', 0],[16.0, 4, ',', 0]

K
###Magnetic order of Dy$^{3+}$ and Fe$^{3+}$ moments in antiferromagnetic DyFeO$_{3}$ probed by spin Hall magnetoresistance and spin Seebeck effect|G. R. Hoogeboom,T. Kuschel,G. E. W. Bauer,M. V. Mostovoy,A. V. Kimel,B. J. van Wees###
(1230316, 1230316)
 Below 23,K, additional features emerge thatpersist below 4,K, the ordering temperature of the Dy3 magneticsublattice.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 50, ',', 1],[20.0, 23, ',', 0],[2.0, 4, ',', 0]

Dy3
###Magnetic order of Dy$^{3+}$ and Fe$^{3+}$ moments in antiferromagnetic DyFeO$_{3}$ probed by spin Hall magnetoresistance and spin Seebeck effect|G. R. Hoogeboom,T. Kuschel,G. E. W. Bauer,M. V. Mostovoy,A. V. Kimel,B. J. van Wees###
(1230329, 1230330)
 Below 23,K, additional features emerge thatpersist below 4,K, the ordering temperature of the Dy3 magneticsublattice.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 50, ',', 1],[33.0, 23, ',', 0],[15.0, 4, ',', 0]

S
###Magnetic order of Dy$^{3+}$ and Fe$^{3+}$ moments in antiferromagnetic DyFeO$_{3}$ probed by spin Hall magnetoresistance and spin Seebeck effect|G. R. Hoogeboom,T. Kuschel,G. E. W. Bauer,M. V. Mostovoy,A. V. Kimel,B. J. van Wees###
(1230350, 1230350)
 We conclude that the combination of SMR and SSE<missing VAR> is a simple andefficient tool to study spin reorientation phase transitions and sublatticemagnetizations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 50, ',', 2],[54.0, 23, ',', 1],[36.0, 4, ',', 1]

SS
###Magnetic order of Dy$^{3+}$ and Fe$^{3+}$ moments in antiferromagnetic DyFeO$_{3}$ probed by spin Hall magnetoresistance and spin Seebeck effect|G. R. Hoogeboom,T. Kuschel,G. E. W. Bauer,M. V. Mostovoy,A. V. Kimel,B. J. van Wees###
(1230356, 1230357)
 We conclude that the combination of SMR and SSE<missing VAR> is a simple andefficient tool to study spin reorientation phase transitions and sublatticemagnetizations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 50, ',', 2],[60.0, 23, ',', 1],[42.0, 4, ',', 1]

NdAlSi
###Incommensurate magnetism mediated by Weyl fermions in NdAlSi|Jonathan Gaudet,Hung-Yu Yang,Santu Baidya,Baozhu Lu,Guangyong Xu,Yang Zhao,Jose A. Rodriguez,Christina M. Hoffmann,David E. Graf,Darius H. Torchinsky,Predrag Nikolić,David Vanderbilt,Fazel Tafti,Collin L. Broholm###
(1230415, 1230417)
Incommensurate magnetism mediated by Weyl fermions in NdAlSi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NdAlSi
###Incommensurate magnetism mediated by Weyl fermions in NdAlSi|Jonathan Gaudet,Hung-Yu Yang,Santu Baidya,Baozhu Lu,Guangyong Xu,Yang Zhao,Jose A. Rodriguez,Christina M. Hoffmann,David E. Graf,Darius H. Torchinsky,Predrag Nikolić,David Vanderbilt,Fazel Tafti,Collin L. Broholm###
(1230555, 1230557)
 Here, we report a new Weyl semimetal, NdAlSi that offers an example.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NdAlSi
###Incommensurate magnetism mediated by Weyl fermions in NdAlSi|Jonathan Gaudet,Hung-Yu Yang,Santu Baidya,Baozhu Lu,Guangyong Xu,Yang Zhao,Jose A. Rodriguez,Christina M. Hoffmann,David E. Graf,Darius H. Torchinsky,Predrag Nikolić,David Vanderbilt,Fazel Tafti,Collin L. Broholm###
(1230592, 1230594)
Using neutron diffraction, we report a long-wavelength magnetic order in NdAlSiwhose periodicity is linked to the nesting vector between two topologicallynon-trivial Fermi pockets, which we characterize using density functionaltheory and quantum oscillation measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Signature of multilayer graphene strain-controlled domain walls in quantum Hall effect|Paul Anderson,Yifan Huang,Yuanjun Fan,Sara Qubbaj,Sinisa Coh,Qin Zhou,Claudia Ojeda-Aristizabal###
(1230845, 1230845)
 Here, we demonstrate through a MEMS (micro-electromechanicalsystem) actuator and magnetoresistance measurements the effect of domain wallsin multilayer graphene quantum Hall effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin-circuit representation of spin-torque ferromagnetic resonance|Kuntal Roy###
(1231072, 1231072)
 Spin-torque ferromagnetic resonance (ST<missing VAR>-FMR) particularly using magneticinsulators and heavy metals possessing a giant spin Hall effect (SHE) hasgotten a lot of attention for the development of spintronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Spin-circuit representation of spin-torque ferromagnetic resonance|Kuntal Roy###
(1231075, 1231075)
 Spin-torque ferromagnetic resonance (ST<missing VAR>-FMR) particularly using magneticinsulators and heavy metals possessing a giant spin Hall effect (SHE) hasgotten a lot of attention for the development of spintronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SH
###Spin-circuit representation of spin-torque ferromagnetic resonance|Kuntal Roy###
(1231108, 1231109)
 Spin-torque ferromagnetic resonance (ST<missing VAR>-FMR) particularly using magneticinsulators and heavy metals possessing a giant spin Hall effect (SHE) hasgotten a lot of attention for the development of spintronic devices.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin-circuit representation of spin-torque ferromagnetic resonance|Kuntal Roy###
(1231266, 1231266)
 We utilize thesuperposition principle in circuit theory to separate the spin Hallmagnetoresistance and spin pumping contributions in the ST<missing VAR>-FMR experiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Spin-circuit representation of spin-torque ferromagnetic resonance|Kuntal Roy###
(1231269, 1231269)
 We utilize thesuperposition principle in circuit theory to separate the spin Hallmagnetoresistance and spin pumping contributions in the ST<missing VAR>-FMR experiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SH
###Spin-circuit representation of spin-torque ferromagnetic resonance|Kuntal Roy###
(1231330, 1231331)
 We further consider multilayers like a spin-valvestructure with an SHE<missing VAR> layer sandwiched by two magnetic layers and show how thecorresponding spin-circuit representation can be constructed by simply writinga vector netlist and solved using circuit theory.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co2MnGa
###Anisotropic magneto-thermal transport in Co$_2$MnGa thin films|Philipp Ritzinger,Helena Reichlova,Dominik Kriegner,Anastasios Markou,Richard Schlitz,Michaela Lammel,Gyu Hyeon Park,Andy Thomas,Pavel Streda,Claudia Felser,Sebastian T. B. Goennenwein,Karel Vyborny###
(1231411, 1231414)
Anisotropic magneto-thermal transport in Co2MnGa thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.5,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co2MnGa
###Anisotropic magneto-thermal transport in Co$_2$MnGa thin films|Philipp Ritzinger,Helena Reichlova,Dominik Kriegner,Anastasios Markou,Richard Schlitz,Michaela Lammel,Gyu Hyeon Park,Andy Thomas,Pavel Streda,Claudia Felser,Sebastian T. B. Goennenwein,Karel Vyborny###
(1231423, 1231426)
 Ferromagnetic Co2MnGa has recently attracted significant attention due toeffects related to non-trivial topology of its band structure, however asystematic study of canonical magneto-galvanic transport effects is missing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.5,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Anisotropic magneto-thermal transport in Co$_2$MnGa thin films|Philipp Ritzinger,Helena Reichlova,Dominik Kriegner,Anastasios Markou,Richard Schlitz,Michaela Lammel,Gyu Hyeon Park,Andy Thomas,Pavel Streda,Claudia Felser,Sebastian T. B. Goennenwein,Karel Vyborny###
(1231535, 1231535)
Focusing on high quality thin films, here we systematically measure anisotropicmagnetoresistance (AMR) and its thermoelectric counterpart (AMTP).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co2MnGa
###Anisotropic magneto-thermal transport in Co$_2$MnGa thin films|Philipp Ritzinger,Helena Reichlova,Dominik Kriegner,Anastasios Markou,Richard Schlitz,Michaela Lammel,Gyu Hyeon Park,Andy Thomas,Pavel Streda,Claudia Felser,Sebastian T. B. Goennenwein,Karel Vyborny###
(1231606, 1231609)
 We model theAMR data by free energy minimisation within the Stoner-Wohlfarth formalism andconclude that both crystalline and non-crystalline components of thismagneto-transport phenomenon are present in Co2MnGa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.5,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Anisotropic magneto-thermal transport in Co$_2$MnGa thin films|Philipp Ritzinger,Helena Reichlova,Dominik Kriegner,Anastasios Markou,Richard Schlitz,Michaela Lammel,Gyu Hyeon Park,Andy Thomas,Pavel Streda,Claudia Felser,Sebastian T. B. Goennenwein,Karel Vyborny###
(1231639, 1231639)
 Unlike the AMR which issmall in relative terms, the AMTP is large due to a change of sign of theSeebeck coefficient as a function of temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Anisotropic magneto-thermal transport in Co$_2$MnGa thin films|Philipp Ritzinger,Helena Reichlova,Dominik Kriegner,Anastasios Markou,Richard Schlitz,Michaela Lammel,Gyu Hyeon Park,Andy Thomas,Pavel Streda,Claudia Felser,Sebastian T. B. Goennenwein,Karel Vyborny###
(1231711, 1231711)
 This fact is discussed in thecontext of the Mott rule and further analysis of AMTP components is presented.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LuBi
###Pressure effect on the topologically nontrivial electronic state and transport of lutecium monobismuthide|H. Gu1,F. Tang,Y. -R. Ruan,J. -M. Zhang,R. -J. Tang,W. Zhao,R. Zhao,L. Zhang,Z. -D. Han,B. Qian,X. -F. Jiang,Y. Fang###
(1231794, 1231795)
 Here, we grow LuBi single crystaland study the magnetization, transport behaviors and electronic band structuresto reveal its topological semimetal feature and superconductivity underpressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 0, 'GPa', 1]

At
###Pressure effect on the topologically nontrivial electronic state and transport of lutecium monobismuthide|H. Gu1,F. Tang,Y. -R. Ruan,J. -M. Zhang,R. -J. Tang,W. Zhao,R. Zhao,L. Zhang,Z. -D. Han,B. Qian,X. -F. Jiang,Y. Fang###
(1231846, 1231846)
 At 0 GPa, the quantum oscillations indicate that there are severaltopologically nontrivial carrier pockets around the Fermi level, among whichthe hole ones are isotropic in shape, while the electron ones are anisotropicand responsible for the angular magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[1.0, 0, 'GPa', 0]

LaBi
###Pressure effect on the topologically nontrivial electronic state and transport of lutecium monobismuthide|H. Gu1,F. Tang,Y. -R. Ruan,J. -M. Zhang,R. -J. Tang,W. Zhao,R. Zhao,L. Zhang,Z. -D. Han,B. Qian,X. -F. Jiang,Y. Fang###
(1231970, 1231971)
 Upon compression, thesuperconductivity emerges in the titled compound, showing a similar pressuredependence as that observed in LaBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 0, 'GPa', 1]

LuBi
###Pressure effect on the topologically nontrivial electronic state and transport of lutecium monobismuthide|H. Gu1,F. Tang,Y. -R. Ruan,J. -M. Zhang,R. -J. Tang,W. Zhao,R. Zhao,L. Zhang,Z. -D. Han,B. Qian,X. -F. Jiang,Y. Fang###
(1232046, 1232047)
 Besides, the nearlypressure-independent density of state in LuBi indicates that the conventionalelectron-phonon coupling appears to play a minor role in the superconductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[199.0, 0, 'GPa', 3]

II
###New paradigm for a disordered superconductor in a magnetic field|Anushree Datta,Anurag Banerjee,Nandini Trivedi,Amit Ghosal###
(1232166, 1232167)
 We show that while orbital magnetic field and disorder, acting individuallyweaken superconductivity, acting together they produce an intriguing evolutionof a two-dimensional type-II s<missing VAR>-wave superconductor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###New paradigm for a disordered superconductor in a magnetic field|Anushree Datta,Anurag Banerjee,Nandini Trivedi,Amit Ghosal###
(1232190, 1232190)
 For weak disorder, thecritical field Hc<missing VAR> at which the superfluid density collapses is coincident withthe field at which the superconducting energy gap gets suppressed.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Y
###Magnetism and electrical transport in Y-doped layered iridate Sr$_2$IrO$_4$|Imtiaz Noor Bhatti,A. K. Pramanik###
(1232434, 1232434)
Magnetism and electrical transport in Y-doped layered iridate Sr2IrO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr2IrO4
###Magnetism and electrical transport in Y-doped layered iridate Sr$_2$IrO$_4$|Imtiaz Noor Bhatti,A. K. Pramanik###
(1232442, 1232446)
Magnetism and electrical transport in Y-doped layered iridate Sr2IrO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Y
###Magnetism and electrical transport in Y-doped layered iridate Sr$_2$IrO$_4$|Imtiaz Noor Bhatti,A. K. Pramanik###
(1232476, 1232476)
 Here, we report an investigation of structural, magnetic and electronicproperties in Y-doped layered iridate (Sr1-xYx)2IrO4 (x<missing VAR> leq0.1).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr1-xY
###Magnetism and electrical transport in Y-doped layered iridate Sr$_2$IrO$_4$|Imtiaz Noor Bhatti,A. K. Pramanik###
(1232485, 1232489)
 Here, we report an investigation of structural, magnetic and electronicproperties in Y-doped layered iridate (Sr1-xYx)2IrO4 (x<missing VAR> leq0.1).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

IrO4
###Magnetism and electrical transport in Y-doped layered iridate Sr$_2$IrO$_4$|Imtiaz Noor Bhatti,A. K. Pramanik###
(1232493, 1232495)
 Here, we report an investigation of structural, magnetic and electronicproperties in Y-doped layered iridate (Sr1-xYx)2IrO4 (x<missing VAR> leq0.1).
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr2IrO4
###Magnetism and electrical transport in Y-doped layered iridate Sr$_2$IrO$_4$|Imtiaz Noor Bhatti,A. K. Pramanik###
(1232511, 1232515)
 The parent Sr2IrO4 is a well-studied spin-orbit coupling (SOC)induced insulator with an antiferromagnetic ground state.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(SOC)
###Magnetism and electrical transport in Y-doped layered iridate Sr$_2$IrO$_4$|Imtiaz Noor Bhatti,A. K. Pramanik###
(1232531, 1232535)
 The parent Sr2IrO4 is a well-studied spin-orbit coupling (SOC)induced insulator with an antiferromagnetic ground state.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Y
###Magnetism and electrical transport in Y-doped layered iridate Sr$_2$IrO$_4$|Imtiaz Noor Bhatti,A. K. Pramanik###
(1232555, 1232555)
 The Y-doping hereequivalently acts for electron doping without altering the vital parameterssuch as, SOC and electron correlation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SOC
###Magnetism and electrical transport in Y-doped layered iridate Sr$_2$IrO$_4$|Imtiaz Noor Bhatti,A. K. Pramanik###
(1232588, 1232590)
 The Y-doping hereequivalently acts for electron doping without altering the vital parameterssuch as, SOC and electron correlation.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ir4
###Magnetism and electrical transport in Y-doped layered iridate Sr$_2$IrO$_4$|Imtiaz Noor Bhatti,A. K. Pramanik###
(1232631, 1232632)
 Experimental results show a minutechange in structural parameters and an equivalent charge conversion fromIr4 to Ir3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ir3
###Magnetism and electrical transport in Y-doped layered iridate Sr$_2$IrO$_4$|Imtiaz Noor Bhatti,A. K. Pramanik###
(1232636, 1232637)
 Experimental results show a minutechange in structural parameters and an equivalent charge conversion fromIr4 to Ir3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SOC
###Magnetism and electrical transport in Y-doped layered iridate Sr$_2$IrO$_4$|Imtiaz Noor Bhatti,A. K. Pramanik###
(1232797, 1232799)
 The positive MR both at lowtemperature follows weak antilocalization behavior where the sign change in MRis believed to be caused by an interplay between SOC and magnetic moment.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La2-xSr
###Magnetotransport in overdoped La$_{2-x}$Sr$_x$CuO$_4$: a Fermi liquid approach|Rui-Ying Mao,Da Wang,Congjun Wu,Qiang-Hua Wang###
(1232822, 1232826)
Magnetotransport in overdoped La2-xSrx<missing VAR>CuO4 a Fermi liquid approach.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[244.0, 0.3, ';', 4]

CuO4
###Magnetotransport in overdoped La$_{2-x}$Sr$_x$CuO$_4$: a Fermi liquid approach|Rui-Ying Mao,Da Wang,Congjun Wu,Qiang-Hua Wang###
(1232828, 1232830)
Magnetotransport in overdoped La2-xSrx<missing VAR>CuO4 a Fermi liquid approach.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[240.0, 0.3, ';', 4]

La2-xSr
###Magnetotransport in overdoped La$_{2-x}$Sr$_x$CuO$_4$: a Fermi liquid approach|Rui-Ying Mao,Da Wang,Congjun Wu,Qiang-Hua Wang###
(1232850, 1232854)
 Recently, several experiments on La2-xSrx<missing VAR>CuO4 (L<missing VAR>SCO) challengedthe Fermi liquid picture for overdoped cuprates, and stimulated intensivedebates [1].
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[216.0, 0.3, ';', 3]

CuO4
###Magnetotransport in overdoped La$_{2-x}$Sr$_x$CuO$_4$: a Fermi liquid approach|Rui-Ying Mao,Da Wang,Congjun Wu,Qiang-Hua Wang###
(1232856, 1232858)
 Recently, several experiments on La2-xSrx<missing VAR>CuO4 (L<missing VAR>SCO) challengedthe Fermi liquid picture for overdoped cuprates, and stimulated intensivedebates [1].
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[212.0, 0.3, ';', 3]

O
###Magnetotransport in overdoped La$_{2-x}$Sr$_x$CuO$_4$: a Fermi liquid approach|Rui-Ying Mao,Da Wang,Congjun Wu,Qiang-Hua Wang###
(1232864, 1232864)
 Recently, several experiments on La2-xSrx<missing VAR>CuO4 (L<missing VAR>SCO) challengedthe Fermi liquid picture for overdoped cuprates, and stimulated intensivedebates [1].
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[206.0, 0.3, ';', 3]

In
###Magnetotransport in overdoped La$_{2-x}$Sr$_x$CuO$_4$: a Fermi liquid approach|Rui-Ying Mao,Da Wang,Congjun Wu,Qiang-Hua Wang###
(1232899, 1232899)
 In this work, we study the magnetotransport phenomena in suchsystems based on the Fermi liquid assumption.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[171.0, 0.3, ';', 2]

H
###Magnetotransport in overdoped La$_{2-x}$Sr$_x$CuO$_4$: a Fermi liquid approach|Rui-Ying Mao,Da Wang,Congjun Wu,Qiang-Hua Wang###
(1232943, 1232943)
 The Hall coefficient R<missing VAR>H andmagnetoresistivity rhoxx are investigated near the van Hove singularityx<missing VAR>tinytextVHSapprox0.2 across which the Fermi surface topology changesfrom hole- to electron-like.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 0.3, ';', 1]

VHS
###Magnetotransport in overdoped La$_{2-x}$Sr$_x$CuO$_4$: a Fermi liquid approach|Rui-Ying Mao,Da Wang,Congjun Wu,Qiang-Hua Wang###
(1232971, 1232973)
 The Hall coefficient R<missing VAR>H andmagnetoresistivity rhoxx are investigated near the van Hove singularityx<missing VAR>tinytextVHSapprox0.2 across which the Fermi surface topology changesfrom hole- to electron-like.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 0.3, ';', 1]

H
###Magnetotransport in overdoped La$_{2-x}$Sr$_x$CuO$_4$: a Fermi liquid approach|Rui-Ying Mao,Da Wang,Congjun Wu,Qiang-Hua Wang###
(1233017, 1233017)
 Our main findings are (1) R<missing VAR>H depends on themagnetic field B and drops from positive to negative values with increasingB in the doping regime x<missing VAR>tinytextVHS<x<missing VAR>lesssim0.3; (2) rhoxxgrows up as B2 at small B and saturates at large B, while in thetransition regime a nearly linear behavior shows up.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 0.3, ';', 0]

B
###Magnetotransport in overdoped La$_{2-x}$Sr$_x$CuO$_4$: a Fermi liquid approach|Rui-Ying Mao,Da Wang,Congjun Wu,Qiang-Hua Wang###
(1233030, 1233030)
 Our main findings are (1) R<missing VAR>H depends on themagnetic field B and drops from positive to negative values with increasingB in the doping regime x<missing VAR>tinytextVHS<x<missing VAR>lesssim0.3; (2) rhoxxgrows up as B2 at small B and saturates at large B, while in thetransition regime a nearly linear behavior shows up.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 0.3, ';', 0]

B
###Magnetotransport in overdoped La$_{2-x}$Sr$_x$CuO$_4$: a Fermi liquid approach|Rui-Ying Mao,Da Wang,Congjun Wu,Qiang-Hua Wang###
(1233051, 1233051)
 Our main findings are (1) R<missing VAR>H depends on themagnetic field B and drops from positive to negative values with increasingB in the doping regime x<missing VAR>tinytextVHS<x<missing VAR>lesssim0.3; (2) rhoxxgrows up as B2 at small B and saturates at large B, while in thetransition regime a nearly linear behavior shows up.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 0.3, ';', 0]

VHS
###Magnetotransport in overdoped La$_{2-x}$Sr$_x$CuO$_4$: a Fermi liquid approach|Rui-Ying Mao,Da Wang,Congjun Wu,Qiang-Hua Wang###
(1233064, 1233066)
 Our main findings are (1) R<missing VAR>H depends on themagnetic field B and drops from positive to negative values with increasingB in the doping regime x<missing VAR>tinytextVHS<x<missing VAR>lesssim0.3; (2) rhoxxgrows up as B2 at small B and saturates at large B, while in thetransition regime a nearly linear behavior shows up.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 0.3, ';', 0]

B2
###Magnetotransport in overdoped La$_{2-x}$Sr$_x$CuO$_4$: a Fermi liquid approach|Rui-Ying Mao,Da Wang,Congjun Wu,Qiang-Hua Wang###
(1233087, 1233088)
 Our main findings are (1) R<missing VAR>H depends on themagnetic field B and drops from positive to negative values with increasingB in the doping regime x<missing VAR>tinytextVHS<x<missing VAR>lesssim0.3; (2) rhoxxgrows up as B2 at small B and saturates at large B, while in thetransition regime a nearly linear behavior shows up.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 0.3, ';', 0]

B
###Magnetotransport in overdoped La$_{2-x}$Sr$_x$CuO$_4$: a Fermi liquid approach|Rui-Ying Mao,Da Wang,Congjun Wu,Qiang-Hua Wang###
(1233094, 1233094)
 Our main findings are (1) R<missing VAR>H depends on themagnetic field B and drops from positive to negative values with increasingB in the doping regime x<missing VAR>tinytextVHS<x<missing VAR>lesssim0.3; (2) rhoxxgrows up as B2 at small B and saturates at large B, while in thetransition regime a nearly linear behavior shows up.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 0.3, ';', 0]

B
###Magnetotransport in overdoped La$_{2-x}$Sr$_x$CuO$_4$: a Fermi liquid approach|Rui-Ying Mao,Da Wang,Congjun Wu,Qiang-Hua Wang###
(1233104, 1233104)
 Our main findings are (1) R<missing VAR>H depends on themagnetic field B and drops from positive to negative values with increasingB in the doping regime x<missing VAR>tinytextVHS<x<missing VAR>lesssim0.3; (2) rhoxxgrows up as B2 at small B and saturates at large B, while in thetransition regime a nearly linear behavior shows up.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 0.3, ';', 0]

SCO
###Magnetotransport in overdoped La$_{2-x}$Sr$_x$CuO$_4$: a Fermi liquid approach|Rui-Ying Mao,Da Wang,Congjun Wu,Qiang-Hua Wang###
(1233159, 1233161)
 Our results can befurther tested by future magnetotransport experiments in the overdoped L<missing VAR>SCO.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 0.3, ';', 1]

N
###Non-Ohmic negative longitudinal magnetoresistance in two-dimensional electron gas|Yang-Yang Lyu,Xian-Jing Zhou,Zhi-Li Xiao,Roxanna Fotovat,Jing Xu,Gobind Basnet,Yong-Lei Wang,Dafei Jin,Ralu Divan,Hua-Bing Wang,Wai-Kwong Kwok###
(1233200, 1233200)
 Negative longitudinal magnetoresistance (NLMR) has been reported in a varietyof materials and has attracted extensive attention as an electrotransporthallmark of topological Weyl semimetals.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[159.0, 60, 'K', 3]

N
###Non-Ohmic negative longitudinal magnetoresistance in two-dimensional electron gas|Yang-Yang Lyu,Xian-Jing Zhou,Zhi-Li Xiao,Roxanna Fotovat,Jing Xu,Gobind Basnet,Yong-Lei Wang,Dafei Jin,Ralu Divan,Hua-Bing Wang,Wai-Kwong Kwok###
(1233279, 1233279)
 Here, we demonstrate that the NLMR in a two dimensional electron gascan be influenced by the measurement current.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 60, 'K', 1]

N
###Non-Ohmic negative longitudinal magnetoresistance in two-dimensional electron gas|Yang-Yang Lyu,Xian-Jing Zhou,Zhi-Li Xiao,Roxanna Fotovat,Jing Xu,Gobind Basnet,Yong-Lei Wang,Dafei Jin,Ralu Divan,Hua-Bing Wang,Wai-Kwong Kwok###
(1233316, 1233316)
 While the NLMR persists up to 130K, its magnitude and magnetic field response become dependent on the appliedcurrent below 60 K.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 60, 'K', 0]

K
###Non-Ohmic negative longitudinal magnetoresistance in two-dimensional electron gas|Yang-Yang Lyu,Xian-Jing Zhou,Zhi-Li Xiao,Roxanna Fotovat,Jing Xu,Gobind Basnet,Yong-Lei Wang,Dafei Jin,Ralu Divan,Hua-Bing Wang,Wai-Kwong Kwok###
(1233330, 1233330)
 While the NLMR persists up to 130K, its magnitude and magnetic field response become dependent on the appliedcurrent below 60 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 60, 'K', 0]

N
###Non-Ohmic negative longitudinal magnetoresistance in two-dimensional electron gas|Yang-Yang Lyu,Xian-Jing Zhou,Zhi-Li Xiao,Roxanna Fotovat,Jing Xu,Gobind Basnet,Yong-Lei Wang,Dafei Jin,Ralu Divan,Hua-Bing Wang,Wai-Kwong Kwok###
(1233366, 1233366)
 The tunable NLMR at low and high currents can be bestattributed to quantum interference and disorder scattering effects,respectively.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 60, 'K', 1]

N
###Non-Ohmic negative longitudinal magnetoresistance in two-dimensional electron gas|Yang-Yang Lyu,Xian-Jing Zhou,Zhi-Li Xiao,Roxanna Fotovat,Jing Xu,Gobind Basnet,Yong-Lei Wang,Dafei Jin,Ralu Divan,Hua-Bing Wang,Wai-Kwong Kwok###
(1233419, 1233419)
 This work uncovers non-Ohmic NLMR in a non-Weyl material andhighlights potential effects of the measurement current in elucidatingelectrotransport phenomena.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 60, 'K', 2]

N
###Non-Ohmic negative longitudinal magnetoresistance in two-dimensional electron gas|Yang-Yang Lyu,Xian-Jing Zhou,Zhi-Li Xiao,Roxanna Fotovat,Jing Xu,Gobind Basnet,Yong-Lei Wang,Dafei Jin,Ralu Divan,Hua-Bing Wang,Wai-Kwong Kwok###
(1233469, 1233469)
 We also demonstrate that NLMRs can be a valuablephenomenon in revealing the origins of other properties, such as negative M<missing VAR>Rsin perpendicular magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 60, 'K', 3]

N
###Resistive transition of hydrogen-rich superconductors|Evgeny F. Talantsev,Karoline Stolze###
(1233690, 1233690)
 Recently,Hirsch and Marsiglio (2020 arXiv2012.12796) performed an analysis of thetransition width in several near-room-temperature superconductors (NRTS) andreported that the reduced transition width, DeltaTc/Tc, in thesematerials does not follow a conventional trend of transition width broadeningon applied magnetic field observed in low- and high-Tc superconductors.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Resistive transition of hydrogen-rich superconductors|Evgeny F. Talantsev,Karoline Stolze###
(1233693, 1233693)
 Recently,Hirsch and Marsiglio (2020 arXiv2012.12796) performed an analysis of thetransition width in several near-room-temperature superconductors (NRTS) andreported that the reduced transition width, DeltaTc/Tc, in thesematerials does not follow a conventional trend of transition width broadeningon applied magnetic field observed in low- and high-Tc superconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Resistive transition of hydrogen-rich superconductors|Evgeny F. Talantsev,Karoline Stolze###
(1233801, 1233801)
 Herewe present thorough mathematical analysis of the magnetoresistive data,itR(T,B), for the high-entropy alloy (ScZrNb)0.65[RhPd]0.35 andhydrogen-rich superconductors of Im-3m<missing VAR>-H3S, C2/m<missing VAR>-LaH10 andP63/mmc-CeH9.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(ScZrNb)0.65
###Resistive transition of hydrogen-rich superconductors|Evgeny F. Talantsev,Karoline Stolze###
(1233815, 1233820)
 Herewe present thorough mathematical analysis of the magnetoresistive data,itR(T,B), for the high-entropy alloy (ScZrNb)0.65[RhPd]0.35 andhydrogen-rich superconductors of Im-3m<missing VAR>-H3S, C2/m<missing VAR>-LaH10 andP63/mmc-CeH9.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Viscous magnetotransport and Gurzhi effect in bilayer electron system|G. M. Gusev,A. S. Jaroshevich,A. D. Levin,Z. D. Kvon,A. K. Bakarov###
(1234000, 1234000)
 We observe a large negative magnetoresistance and a decrease of resistivitywith increasing temperature, known as the Gurzhi effect, in a bilayer electron(BL) system formed by a wide GaAs quantum well.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Viscous magnetotransport and Gurzhi effect in bilayer electron system|G. M. Gusev,A. S. Jaroshevich,A. D. Levin,Z. D. Kvon,A. K. Bakarov###
(1234014, 1234015)
 We observe a large negative magnetoresistance and a decrease of resistivitywith increasing temperature, known as the Gurzhi effect, in a bilayer electron(BL) system formed by a wide GaAs quantum well.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(SW)
###Viscous magnetotransport and Gurzhi effect in bilayer electron system|G. M. Gusev,A. S. Jaroshevich,A. D. Levin,Z. D. Kvon,A. K. Bakarov###
(1234109, 1234112)
  We find that the electron-electron scattering in the bilayer is moreintensive in comparison with a single-band well (SW).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Viscous magnetotransport and Gurzhi effect in bilayer electron system|G. M. Gusev,A. S. Jaroshevich,A. D. Levin,Z. D. Kvon,A. K. Bakarov###
(1234191, 1234191)
 Our results reveal that slip length in a BL<missing VAR> isshorter than in a SW, and that the BL<missing VAR> system goes deeper into the hydrodynamicregime.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SW
###Viscous magnetotransport and Gurzhi effect in bilayer electron system|G. M. Gusev,A. S. Jaroshevich,A. D. Levin,Z. D. Kvon,A. K. Bakarov###
(1234205, 1234206)
 Our results reveal that slip length in a BL<missing VAR> isshorter than in a SW, and that the BL<missing VAR> system goes deeper into the hydrodynamicregime.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Viscous magnetotransport and Gurzhi effect in bilayer electron system|G. M. Gusev,A. S. Jaroshevich,A. D. Levin,Z. D. Kvon,A. K. Bakarov###
(1234215, 1234215)
 Our results reveal that slip length in a BL<missing VAR> isshorter than in a SW, and that the BL<missing VAR> system goes deeper into the hydrodynamicregime.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

VI
###Superconducting contacts to a monolayer semiconductor|M. Ramezani,I. Correa Sampaio,K. Watanabe,T. Taniguchi,C. Schönenberger,A. Baumgartner###
(1234316, 1234317)
 We demonstrate superconducting vertical interconnect access (VIA) contacts toa monolayer of molybdenum disulfide (MoS2), a layered semiconductor withhighly relevant electronic and optical properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(MoS2)
###Superconducting contacts to a monolayer semiconductor|M. Ramezani,I. Correa Sampaio,K. Watanabe,T. Taniguchi,C. Schönenberger,A. Baumgartner###
(1234336, 1234340)
 We demonstrate superconducting vertical interconnect access (VIA) contacts toa monolayer of molybdenum disulfide (MoS2), a layered semiconductor withhighly relevant electronic and optical properties.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Superconducting contacts to a monolayer semiconductor|M. Ramezani,I. Correa Sampaio,K. Watanabe,T. Taniguchi,C. Schönenberger,A. Baumgartner###
(1234365, 1234365)
 As a contact material we useMoRe, a superconductor with a high critical magnetic field and high criticaltemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoRe
###Superconducting contacts to a monolayer semiconductor|M. Ramezani,I. Correa Sampaio,K. Watanabe,T. Taniguchi,C. Schönenberger,A. Baumgartner###
(1234378, 1234379)
 As a contact material we useMoRe, a superconductor with a high critical magnetic field and high criticaltemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Superconducting contacts to a monolayer semiconductor|M. Ramezani,I. Correa Sampaio,K. Watanabe,T. Taniguchi,C. Schönenberger,A. Baumgartner###
(1234446, 1234446)
 Inaddition, we find MoS2 regions that are strongly coupled to thesuperconductor, resulting in resonant Andreev tunneling and junction dependentgap characteristics, suggesting a superconducting proximity effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoS2
###Superconducting contacts to a monolayer semiconductor|M. Ramezani,I. Correa Sampaio,K. Watanabe,T. Taniguchi,C. Schönenberger,A. Baumgartner###
(1234456, 1234458)
 Inaddition, we find MoS2 regions that are strongly coupled to thesuperconductor, resulting in resonant Andreev tunneling and junction dependentgap characteristics, suggesting a superconducting proximity effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoS2
###Superconducting contacts to a monolayer semiconductor|M. Ramezani,I. Correa Sampaio,K. Watanabe,T. Taniguchi,C. Schönenberger,A. Baumgartner###
(1234551, 1234553)
Magnetoresistance measurements show that the bandstructure and the highintrinsic carrier mobility remain intact in the bulk of the MoS2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

VI
###Superconducting contacts to a monolayer semiconductor|M. Ramezani,I. Correa Sampaio,K. Watanabe,T. Taniguchi,C. Schönenberger,A. Baumgartner###
(1234563, 1234564)
 This typeof VIA contact is applicable to a large variety of layered materials andsuperconducting contacts, opening up a path to monolayer semiconductors as aplatform for superconducting hybrid devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Se3
###Modeling of Magneto-Conductivity of Bismuth Selenide -- A Topological Insulator|Yogesh Kumar,Rabia Sultana,Prince Sharma,V. P. S. Awana###
(1234671, 1234674)
 We report the magneto-conductivity analysis of Bi2Se3 single crystal atdifferent temperatures in a magnetic field range of 14Tesla.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 14, 'Tesla', 0],[95.0, 380, 'percent', 2],[107.0, 14, 'T', 2],[116.0, 5, 'K', 2],[185.0, 1, 'Tesla', 4],[303.0, 200, 'K', 6],[318.0, 14, 'Tesla', 6]

H
###Modeling of Magneto-Conductivity of Bismuth Selenide -- A Topological Insulator|Yogesh Kumar,Rabia Sultana,Prince Sharma,V. P. S. Awana###
(1234802, 1234802)
 The Hikami Larkin Nagaoka (HL<missing VAR>N) equation hasbeen used to fit the magneto-conductivity (M<missing VAR>C) data.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 14, 'Tesla', 3],[33.0, 380, 'percent', 1],[21.0, 14, 'T', 1],[12.0, 5, 'K', 1],[57.0, 1, 'Tesla', 1],[175.0, 200, 'K', 3],[190.0, 14, 'Tesla', 3]

N
###Modeling of Magneto-Conductivity of Bismuth Selenide -- A Topological Insulator|Yogesh Kumar,Rabia Sultana,Prince Sharma,V. P. S. Awana###
(1234804, 1234804)
 The Hikami Larkin Nagaoka (HL<missing VAR>N) equation hasbeen used to fit the magneto-conductivity (M<missing VAR>C) data.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 14, 'Tesla', 3],[35.0, 380, 'percent', 1],[23.0, 14, 'T', 1],[14.0, 5, 'K', 1],[55.0, 1, 'Tesla', 1],[173.0, 200, 'K', 3],[188.0, 14, 'Tesla', 3]

C
###Modeling of Magneto-Conductivity of Bismuth Selenide -- A Topological Insulator|Yogesh Kumar,Rabia Sultana,Prince Sharma,V. P. S. Awana###
(1234828, 1234828)
 The Hikami Larkin Nagaoka (HL<missing VAR>N) equation hasbeen used to fit the magneto-conductivity (M<missing VAR>C) data.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 14, 'Tesla', 3],[59.0, 380, 'percent', 1],[47.0, 14, 'T', 1],[38.0, 5, 'K', 1],[31.0, 1, 'Tesla', 1],[149.0, 200, 'K', 3],[164.0, 14, 'Tesla', 3]

H
###Modeling of Magneto-Conductivity of Bismuth Selenide -- A Topological Insulator|Yogesh Kumar,Rabia Sultana,Prince Sharma,V. P. S. Awana###
(1234839, 1234839)
 However, the HL<missing VAR>N fittedcurve deviates at higher magnetic fields above 1 Tesla, suggesting that therole of surface driven conductivity suppresses with an increasing magneticfield.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 14, 'Tesla', 4],[70.0, 380, 'percent', 2],[58.0, 14, 'T', 2],[49.0, 5, 'K', 2],[20.0, 1, 'Tesla', 0],[138.0, 200, 'K', 2],[153.0, 14, 'Tesla', 2]

N
###Modeling of Magneto-Conductivity of Bismuth Selenide -- A Topological Insulator|Yogesh Kumar,Rabia Sultana,Prince Sharma,V. P. S. Awana###
(1234841, 1234841)
 However, the HL<missing VAR>N fittedcurve deviates at higher magnetic fields above 1 Tesla, suggesting that therole of surface driven conductivity suppresses with an increasing magneticfield.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 14, 'Tesla', 4],[72.0, 380, 'percent', 2],[60.0, 14, 'T', 2],[51.0, 5, 'K', 2],[18.0, 1, 'Tesla', 0],[136.0, 200, 'K', 2],[151.0, 14, 'Tesla', 2]

H
###Modeling of Magneto-Conductivity of Bismuth Selenide -- A Topological Insulator|Yogesh Kumar,Rabia Sultana,Prince Sharma,V. P. S. Awana###
(1234914, 1234914)
 This article proposes a speculative model comprising of surface-drivenHL<missing VAR>N and added quantum diffusive and bulk carriers driven classical terms.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[216.0, 14, 'Tesla', 5],[145.0, 380, 'percent', 3],[133.0, 14, 'T', 3],[124.0, 5, 'K', 3],[55.0, 1, 'Tesla', 1],[63.0, 200, 'K', 1],[78.0, 14, 'Tesla', 1]

N
###Modeling of Magneto-Conductivity of Bismuth Selenide -- A Topological Insulator|Yogesh Kumar,Rabia Sultana,Prince Sharma,V. P. S. Awana###
(1234916, 1234916)
 This article proposes a speculative model comprising of surface-drivenHL<missing VAR>N and added quantum diffusive and bulk carriers driven classical terms.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[218.0, 14, 'Tesla', 5],[147.0, 380, 'percent', 3],[135.0, 14, 'T', 3],[126.0, 5, 'K', 3],[57.0, 1, 'Tesla', 1],[61.0, 200, 'K', 1],[76.0, 14, 'Tesla', 1]

C
###Modeling of Magneto-Conductivity of Bismuth Selenide -- A Topological Insulator|Yogesh Kumar,Rabia Sultana,Prince Sharma,V. P. S. Awana###
(1234951, 1234951)
 Themodel successfully explains the M<missing VAR>C of the Bi2Se3 single crystal at varioustemperatures (5 to 200K) and applied magnetic fields (up to 14Tesla).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[253.0, 14, 'Tesla', 6],[182.0, 380, 'percent', 4],[170.0, 14, 'T', 4],[161.0, 5, 'K', 4],[92.0, 1, 'Tesla', 2],[26.0, 200, 'K', 0],[41.0, 14, 'Tesla', 0]

Bi2Se3
###Modeling of Magneto-Conductivity of Bismuth Selenide -- A Topological Insulator|Yogesh Kumar,Rabia Sultana,Prince Sharma,V. P. S. Awana###
(1234957, 1234960)
 Themodel successfully explains the M<missing VAR>C of the Bi2Se3 single crystal at varioustemperatures (5 to 200K) and applied magnetic fields (up to 14Tesla).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[259.0, 14, 'Tesla', 6],[188.0, 380, 'percent', 4],[176.0, 14, 'T', 4],[167.0, 5, 'K', 4],[98.0, 1, 'Tesla', 2],[17.0, 200, 'K', 0],[32.0, 14, 'Tesla', 0]

VTe2
###High magnetic field induced crossover from the Kondo to Fermi liquid behavior in 1$T$-VTe$_{2}$ single crystals|Xiaxin Ding,Jie Xing,Gang Li,Luis Balicas,Krzysztof Gofryk,Hai-Hu Wen###
(1235033, 1235035)
High magnetic field induced crossover from the Kondo to Fermi liquid behavior in 1T<missing VAR>-VTe2 single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 1.3, 'to', 1],[43.0, 300, 'K', 1],[57.0, 35, 'T', 1],[160.0, 12, 'K', 3]

VTe2
###High magnetic field induced crossover from the Kondo to Fermi liquid behavior in 1$T$-VTe$_{2}$ single crystals|Xiaxin Ding,Jie Xing,Gang Li,Luis Balicas,Krzysztof Gofryk,Hai-Hu Wen###
(1235059, 1235061)
 The magnetic and magnetotransport properties of metallic 1T<missing VAR>-VTe2single crystals were investigated at temperatures from 1.3 to 300 K and inmagnetic fields up to 35 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 1.3, 'to', 0],[17.0, 300, 'K', 0],[31.0, 35, 'T', 0],[134.0, 12, 'K', 2]

K
###High magnetic field induced crossover from the Kondo to Fermi liquid behavior in 1$T$-VTe$_{2}$ single crystals|Xiaxin Ding,Jie Xing,Gang Li,Luis Balicas,Krzysztof Gofryk,Hai-Hu Wen###
(1235193, 1235193)
 The Brillouin scale of the negative magnetoresistivity abovethe Kondo temperature T<missing VAR>rmK  12 K indicates that the Kondo featuresoriginate from intercalated V ions, with S  1/2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 1.3, 'to', 2],[115.0, 300, 'K', 2],[101.0, 35, 'T', 2],[2.0, 12, 'K', 0]

V
###High magnetic field induced crossover from the Kondo to Fermi liquid behavior in 1$T$-VTe$_{2}$ single crystals|Xiaxin Ding,Jie Xing,Gang Li,Luis Balicas,Krzysztof Gofryk,Hai-Hu Wen###
(1235214, 1235214)
 The Brillouin scale of the negative magnetoresistivity abovethe Kondo temperature T<missing VAR>rmK  12 K indicates that the Kondo featuresoriginate from intercalated V ions, with S  1/2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 1.3, 'to', 2],[136.0, 300, 'K', 2],[122.0, 35, 'T', 2],[19.0, 12, 'K', 0]

S
###High magnetic field induced crossover from the Kondo to Fermi liquid behavior in 1$T$-VTe$_{2}$ single crystals|Xiaxin Ding,Jie Xing,Gang Li,Luis Balicas,Krzysztof Gofryk,Hai-Hu Wen###
(1235221, 1235221)
 The Brillouin scale of the negative magnetoresistivity abovethe Kondo temperature T<missing VAR>rmK  12 K indicates that the Kondo featuresoriginate from intercalated V ions, with S  1/2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 1.3, 'to', 2],[143.0, 300, 'K', 2],[129.0, 35, 'T', 2],[26.0, 12, 'K', 0]

K
###High magnetic field induced crossover from the Kondo to Fermi liquid behavior in 1$T$-VTe$_{2}$ single crystals|Xiaxin Ding,Jie Xing,Gang Li,Luis Balicas,Krzysztof Gofryk,Hai-Hu Wen###
(1235252, 1235252)
 Both magneticsusceptibility and Hall effect show an anomaly around T<missing VAR>rmK.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 1.3, 'to', 3],[174.0, 300, 'K', 3],[160.0, 35, 'T', 3],[57.0, 12, 'K', 1]

K
###High magnetic field induced crossover from the Kondo to Fermi liquid behavior in 1$T$-VTe$_{2}$ single crystals|Xiaxin Ding,Jie Xing,Gang Li,Luis Balicas,Krzysztof Gofryk,Hai-Hu Wen###
(1235307, 1235307)
 By usingthe modified Hamann expression we successfully describe thetemperature-dependent resistivity under various magnetic fields, which showsthe characteristic peak below T<missing VAR>rmK due to the splitting of the Kondoresonance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[230.0, 1.3, 'to', 4],[229.0, 300, 'K', 4],[215.0, 35, 'T', 4],[112.0, 12, 'K', 2]

C
###Electric Quantum Oscillation in Weyl Semimetals|Kyusung Hwang,Woo-Ram Lee,Kwon Park###
(1235580, 1235580)
 Specifically,by using the Keldysh nonequilibrium Green function method, it is shown thatthere is a rich structure in the chiral anomaly transport, including thenegative magnetoresistance, the non-Ohmic behavior, the Esaki-Tsu peak, andfinally the resonant oscillation of the D<missing VAR>C electric current as a function ofelectric field, called the electric quantum oscillation.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BiSb
###Electric Quantum Oscillation in Weyl Semimetals|Kyusung Hwang,Woo-Ram Lee,Kwon Park###
(1235649, 1235650)
 We argue that, goingbeyond the usual behavior of linear response, the non-Ohmic behavior observedin BiSb alloys can be regarded as a precursor to the occurrence of electricquantum oscillation, which is both topologically and energetically protected inWeyl semimetals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuTe2
###Observation of an Unusual Colossal Anisotropic Magnetoresistance Effect in an Antiferromagnetic Semiconductor|Huali Yang,Qing Liu,Zhaoliang Liao,Liang Si,Peiheng Jiang,Xiaolei Liu,Yanfeng Guo,Junjie Yin,Meng Wang,Zhigao Sheng,Yuxin Zhao,Zhiming Wang,Zhicheng Zhong,Run-Wei Li###
(1235834, 1235836)
 Here we report acolossal anisotropic magnetoresistance effect in an antiferromagnetic binarycompound with layered structure rare-earth dichalcogenide EuTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 40000, '%', 1],[19.0, 4, 'orders', 1]

Eu
###Observation of an Unusual Colossal Anisotropic Magnetoresistance Effect in an Antiferromagnetic Semiconductor|Huali Yang,Qing Liu,Zhaoliang Liao,Liang Si,Peiheng Jiang,Xiaolei Liu,Yanfeng Guo,Junjie Yin,Meng Wang,Zhigao Sheng,Yuxin Zhao,Zhiming Wang,Zhicheng Zhong,Run-Wei Li###
(1235974, 1235974)
 Moreover, it is revealed that the strong hybridizationbetween orbitals of Eu-layer with localized spin and Te-layer with itinerantcarriers is extremely important for the large AMR effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 40000, '%', 2],[119.0, 4, 'orders', 2]

Te
###Observation of an Unusual Colossal Anisotropic Magnetoresistance Effect in an Antiferromagnetic Semiconductor|Huali Yang,Qing Liu,Zhaoliang Liao,Liang Si,Peiheng Jiang,Xiaolei Liu,Yanfeng Guo,Junjie Yin,Meng Wang,Zhigao Sheng,Yuxin Zhao,Zhiming Wang,Zhicheng Zhong,Run-Wei Li###
(1235986, 1235986)
 Moreover, it is revealed that the strong hybridizationbetween orbitals of Eu-layer with localized spin and Te-layer with itinerantcarriers is extremely important for the large AMR effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 40000, '%', 2],[131.0, 4, 'orders', 2]

F
###Observation of an Unusual Colossal Anisotropic Magnetoresistance Effect in an Antiferromagnetic Semiconductor|Huali Yang,Qing Liu,Zhaoliang Liao,Liang Si,Peiheng Jiang,Xiaolei Liu,Yanfeng Guo,Junjie Yin,Meng Wang,Zhigao Sheng,Yuxin Zhao,Zhiming Wang,Zhicheng Zhong,Run-Wei Li###
(1236034, 1236034)
 Our results suggest anew direction towards exploring AFM<missing VAR> materials with prominent magnetotransportproperties, which creates an unprecedented opportunity for AFM<missing VAR> spintronicsapplications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, 40000, '%', 3],[179.0, 4, 'orders', 3]

F
###Observation of an Unusual Colossal Anisotropic Magnetoresistance Effect in an Antiferromagnetic Semiconductor|Huali Yang,Qing Liu,Zhaoliang Liao,Liang Si,Peiheng Jiang,Xiaolei Liu,Yanfeng Guo,Junjie Yin,Meng Wang,Zhigao Sheng,Yuxin Zhao,Zhiming Wang,Zhicheng Zhong,Run-Wei Li###
(1236062, 1236062)
 Our results suggest anew direction towards exploring AFM<missing VAR> materials with prominent magnetotransportproperties, which creates an unprecedented opportunity for AFM<missing VAR> spintronicsapplications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[214.0, 40000, '%', 3],[207.0, 4, 'orders', 3]

In
###Self-induced spin-orbit torques in metallic ferromagnets|Hector Ochoa,Ricardo Zarzuela,Yaroslav Tserkovnyak###
(1236260, 1236260)
 In inversion-asymmetricheterostructures, the uncompensated spin accumulation exerts a dissipativetorque on the order parameter, giving rise to a current-dependent linewidth inthe ferromagnetic resonance with a characteristic angular dependence.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Signatures of a Quantum Griffiths Phase close to an Electronic Nematic Quantum Phase Transition|Pascal Reiss,David Graf,Amir A. Haghighirad,Thomas Vojta,Amalia I. Coldea###
(1236424, 1236424)
 In the vicinity of a quantum critical point, quenched disorder can lead to aquantum Griffiths phase, accompanied by an exotic power-law scaling with acontinuously varying dynamical exponent that diverges in the zero-temperaturelimit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeSe0.89S0.11
###Signatures of a Quantum Griffiths Phase close to an Electronic Nematic Quantum Phase Transition|Pascal Reiss,David Graf,Amir A. Haghighirad,Thomas Vojta,Amalia I. Coldea###
(1236532, 1236536)
 Here, we investigate a nematic quantum critical point in the iron-basedsuperconductor FeSe0.89S0.11 using applied hydrostatic pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.055,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.445,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Se
###Signatures of a Quantum Griffiths Phase close to an Electronic Nematic Quantum Phase Transition|Pascal Reiss,David Graf,Amir A. Haghighirad,Thomas Vojta,Amalia I. Coldea###
(1236651, 1236651)
 We interpret our results interms of a quantum Griffiths phase caused by nematic islands that result fromthe local distribution of Se and S atoms.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Signatures of a Quantum Griffiths Phase close to an Electronic Nematic Quantum Phase Transition|Pascal Reiss,David Graf,Amir A. Haghighirad,Thomas Vojta,Amalia I. Coldea###
(1236655, 1236655)
 We interpret our results interms of a quantum Griffiths phase caused by nematic islands that result fromthe local distribution of Se and S atoms.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Signatures of a Quantum Griffiths Phase close to an Electronic Nematic Quantum Phase Transition|Pascal Reiss,David Graf,Amir A. Haghighirad,Thomas Vojta,Amalia I. Coldea###
(1236660, 1236660)
 At low temperatures, the Griffithsphase is masked by the emergence of a Fermi liquid phase due to a strongnematoelastic coupling and a Lifshitz transition that changes the topology ofthe Fermi surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Spin-orbit torque characterization in a nutshell|Minh-Hai Nguyen,Chi-Feng Pai###
(1236824, 1236825)
 The realization of spin-orbit torque (SOT) driven magnetic dynamicsand switching in diverse magnetic heterostructures also pave the way fordeveloping SOT<missing VAR> magnetoresistive random access memory and other novel SOT<missing VAR> memoryand logic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Spin-orbit torque characterization in a nutshell|Minh-Hai Nguyen,Chi-Feng Pai###
(1236861, 1236862)
 The realization of spin-orbit torque (SOT) driven magnetic dynamicsand switching in diverse magnetic heterostructures also pave the way fordeveloping SOT<missing VAR> magnetoresistive random access memory and other novel SOT<missing VAR> memoryand logic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Spin-orbit torque characterization in a nutshell|Minh-Hai Nguyen,Chi-Feng Pai###
(1236879, 1236880)
 The realization of spin-orbit torque (SOT) driven magnetic dynamicsand switching in diverse magnetic heterostructures also pave the way fordeveloping SOT<missing VAR> magnetoresistive random access memory and other novel SOT<missing VAR> memoryand logic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Spin-orbit torque characterization in a nutshell|Minh-Hai Nguyen,Chi-Feng Pai###
(1236912, 1236913)
 Of scientific and technological importance are accurate andefficient SOT<missing VAR> quantification techniques, which have been abundantly developedin the last decade.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin-orbit torque characterization in a nutshell|Minh-Hai Nguyen,Chi-Feng Pai###
(1236941, 1236941)
 In this article, we summarize popular techniques toexperimentally quantify SOTs in magnetic heterostructures at micro- andnano-scale.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Spin-orbit torque characterization in a nutshell|Minh-Hai Nguyen,Chi-Feng Pai###
(1236963, 1236964)
 In this article, we summarize popular techniques toexperimentally quantify SOTs in magnetic heterostructures at micro- andnano-scale.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Spin-orbit torque characterization in a nutshell|Minh-Hai Nguyen,Chi-Feng Pai###
(1237059, 1237060)
Finally, we discuss the remaining challenges in understanding and quantifyingthe SOTs in heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Current-induced magnetization dynamics in single and double layer magnetic nanopillars grown by molecular beam epitaxy|N. Müsgens,E. Maynicke,M. Weidenbach,C. J. P. Smits,M. Bückins,J. Mayer,B. Beschoten,G. Güntherodt###
(1237155, 1237155)
 For all Co Cu  Co double layer junctions we observe a stable intermediate resistancestate which can be reached by current starting from the parallel configurationof the respective ferromagnetic layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Current-induced magnetization dynamics in single and double layer magnetic nanopillars grown by molecular beam epitaxy|N. Müsgens,E. Maynicke,M. Weidenbach,C. J. P. Smits,M. Bückins,J. Mayer,B. Beschoten,G. Güntherodt###
(1237159, 1237159)
 For all Co Cu  Co double layer junctions we observe a stable intermediate resistancestate which can be reached by current starting from the parallel configurationof the respective ferromagnetic layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Current-induced magnetization dynamics in single and double layer magnetic nanopillars grown by molecular beam epitaxy|N. Müsgens,E. Maynicke,M. Weidenbach,C. J. P. Smits,M. Bückins,J. Mayer,B. Beschoten,G. Güntherodt###
(1237162, 1237162)
 For all Co Cu  Co double layer junctions we observe a stable intermediate resistancestate which can be reached by current starting from the parallel configurationof the respective ferromagnetic layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Current-induced magnetization dynamics in single and double layer magnetic nanopillars grown by molecular beam epitaxy|N. Müsgens,E. Maynicke,M. Weidenbach,C. J. P. Smits,M. Bückins,J. Mayer,B. Beschoten,G. Güntherodt###
(1237313, 1237313)
 Current-induced magnetization dynamics in magneticsingle layer junctions of Cu  Co  Cu has been investigated in magnetic fieldswhich are applied perpendicular to the magnetic layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Current-induced magnetization dynamics in single and double layer magnetic nanopillars grown by molecular beam epitaxy|N. Müsgens,E. Maynicke,M. Weidenbach,C. J. P. Smits,M. Bückins,J. Mayer,B. Beschoten,G. Güntherodt###
(1237316, 1237316)
 Current-induced magnetization dynamics in magneticsingle layer junctions of Cu  Co  Cu has been investigated in magnetic fieldswhich are applied perpendicular to the magnetic layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Current-induced magnetization dynamics in single and double layer magnetic nanopillars grown by molecular beam epitaxy|N. Müsgens,E. Maynicke,M. Weidenbach,C. J. P. Smits,M. Bückins,J. Mayer,B. Beschoten,G. Güntherodt###
(1237319, 1237319)
 Current-induced magnetization dynamics in magneticsingle layer junctions of Cu  Co  Cu has been investigated in magnetic fieldswhich are applied perpendicular to the magnetic layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiO
###Effective strain manipulation of the antiferromagnetic state of polycrystalline NiO|A. Barra,A. Ross,O. Gomonay,L. Baldrati,A. Chavez,R. Lebrun,J. D. Schneider,P. Shirazi,Q. Wang,J. Sinova,G. P. Carman,M. Kläui###
(1237418, 1237419)
Effective strain manipulation of the antiferromagnetic state of polycrystalline NiO.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Effective strain manipulation of the antiferromagnetic state of polycrystalline NiO|A. Barra,A. Ross,O. Gomonay,L. Baldrati,A. Chavez,R. Lebrun,J. D. Schneider,P. Shirazi,Q. Wang,J. Sinova,G. P. Carman,M. Kläui###
(1237422, 1237422)
 As a candidate material for applications such as magnetic memory,polycrystalline antiferromagnets offer the same robustness to external magneticfields, T<missing VAR>Hz spin dynamics, and lack of stray field as their single crystallinecounterparts, but without the limitation of epitaxial growth and latticematched substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiO
###Effective strain manipulation of the antiferromagnetic state of polycrystalline NiO|A. Barra,A. Ross,O. Gomonay,L. Baldrati,A. Chavez,R. Lebrun,J. D. Schneider,P. Shirazi,Q. Wang,J. Sinova,G. P. Carman,M. Kläui###
(1237550, 1237551)
 Here, we first report the detection of the average Neelvector orientiation in polycrystalline NiO via spin Hall magnetoresistance(SMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Effective strain manipulation of the antiferromagnetic state of polycrystalline NiO|A. Barra,A. Ross,O. Gomonay,L. Baldrati,A. Chavez,R. Lebrun,J. D. Schneider,P. Shirazi,Q. Wang,J. Sinova,G. P. Carman,M. Kläui###
(1237563, 1237563)
 Here, we first report the detection of the average Neelvector orientiation in polycrystalline NiO via spin Hall magnetoresistance(SMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Effective strain manipulation of the antiferromagnetic state of polycrystalline NiO|A. Barra,A. Ross,O. Gomonay,L. Baldrati,A. Chavez,R. Lebrun,J. D. Schneider,P. Shirazi,Q. Wang,J. Sinova,G. P. Carman,M. Kläui###
(1237616, 1237616)
 Secondly, by applying strain through a piezo-electric substrate, wereduce the critical magnetic field required to reach a saturation of the SMRsignal, indicating a change of the anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiO
###Effective strain manipulation of the antiferromagnetic state of polycrystalline NiO|A. Barra,A. Ross,O. Gomonay,L. Baldrati,A. Chavez,R. Lebrun,J. D. Schneider,P. Shirazi,Q. Wang,J. Sinova,G. P. Carman,M. Kläui###
(1237650, 1237651)
 Our results are consistent withpolycrystalline NiO exhibiting a positive sign of the in-planemagnetostriction.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Theory of spin-Hall magnetoresistance in the AC (terahertz) regime|David A. Reiss,Tobias Kampfrath,Piet W. Brouwer###
(1237738, 1237738)
Theory of spin-Hall magnetoresistance in the AC (terahertz) regime.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Theory of spin-Hall magnetoresistance in the AC (terahertz) regime|David A. Reiss,Tobias Kampfrath,Piet W. Brouwer###
(1237747, 1237747)
 In bilayers consisting of a normal metal (N) with spin-orbit coupling and aferromagnet (F), the combination of the spin-Hall effect, the spin-transfertorque, and the inverse spin-Hall effect gives a small correction to thein-plane conductivity of N, which is referred to as spin-Hall magnetoresistance(SMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(N)
###Theory of spin-Hall magnetoresistance in the AC (terahertz) regime|David A. Reiss,Tobias Kampfrath,Piet W. Brouwer###
(1237761, 1237763)
 In bilayers consisting of a normal metal (N) with spin-orbit coupling and aferromagnet (F), the combination of the spin-Hall effect, the spin-transfertorque, and the inverse spin-Hall effect gives a small correction to thein-plane conductivity of N, which is referred to as spin-Hall magnetoresistance(SMR).
Featurization successful!
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(F)
###Theory of spin-Hall magnetoresistance in the AC (terahertz) regime|David A. Reiss,Tobias Kampfrath,Piet W. Brouwer###
(1237780, 1237782)
 In bilayers consisting of a normal metal (N) with spin-orbit coupling and aferromagnet (F), the combination of the spin-Hall effect, the spin-transfertorque, and the inverse spin-Hall effect gives a small correction to thein-plane conductivity of N, which is referred to as spin-Hall magnetoresistance(SMR).
Featurization successful!
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Theory of spin-Hall magnetoresistance in the AC (terahertz) regime|David A. Reiss,Tobias Kampfrath,Piet W. Brouwer###
(1237843, 1237843)
 In bilayers consisting of a normal metal (N) with spin-orbit coupling and aferromagnet (F), the combination of the spin-Hall effect, the spin-transfertorque, and the inverse spin-Hall effect gives a small correction to thein-plane conductivity of N, which is referred to as spin-Hall magnetoresistance(SMR).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Theory of spin-Hall magnetoresistance in the AC (terahertz) regime|David A. Reiss,Tobias Kampfrath,Piet W. Brouwer###
(1237864, 1237864)
 In bilayers consisting of a normal metal (N) with spin-orbit coupling and aferromagnet (F), the combination of the spin-Hall effect, the spin-transfertorque, and the inverse spin-Hall effect gives a small correction to thein-plane conductivity of N, which is referred to as spin-Hall magnetoresistance(SMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Theory of spin-Hall magnetoresistance in the AC (terahertz) regime|David A. Reiss,Tobias Kampfrath,Piet W. Brouwer###
(1237884, 1237884)
 We here present a theory of the SMR and the associated off-diagonalconductivity corrections for frequencies up to the terahertz regime.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Theory of spin-Hall magnetoresistance in the AC (terahertz) regime|David A. Reiss,Tobias Kampfrath,Piet W. Brouwer###
(1237927, 1237927)
 We showthat the SMR signal has pronounced singularities at the spin-wave frequenciesof F, which identifies it as a potential tool for all-electric spectroscopy ofmagnon modes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Theory of spin-Hall magnetoresistance in the AC (terahertz) regime|David A. Reiss,Tobias Kampfrath,Piet W. Brouwer###
(1237952, 1237952)
 We showthat the SMR signal has pronounced singularities at the spin-wave frequenciesof F, which identifies it as a potential tool for all-electric spectroscopy ofmagnon modes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Theory of spin-Hall magnetoresistance in the AC (terahertz) regime|David A. Reiss,Tobias Kampfrath,Piet W. Brouwer###
(1238001, 1238001)
 A systematic change of the magnitude of the SMR at lowerfrequencies is associated with the onset of a longitudinal magnoniccontribution to spin transport across the F-N interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Theory of spin-Hall magnetoresistance in the AC (terahertz) regime|David A. Reiss,Tobias Kampfrath,Piet W. Brouwer###
(1238043, 1238043)
 A systematic change of the magnitude of the SMR at lowerfrequencies is associated with the onset of a longitudinal magnoniccontribution to spin transport across the F-N interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Theory of spin-Hall magnetoresistance in the AC (terahertz) regime|David A. Reiss,Tobias Kampfrath,Piet W. Brouwer###
(1238045, 1238045)
 A systematic change of the magnitude of the SMR at lowerfrequencies is associated with the onset of a longitudinal magnoniccontribution to spin transport across the F-N interface.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin transfer torque and anisotropic conductance in spin orbit coupled graphene|Morteza Salehi,Razieh Beiranvand,Mohammad Alidoust###
(1238094, 1238094)
 We theoretically study spin-transfer torque (STT) in a graphene system withspin-orbit coupling (SOC).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(SOC)
###Spin transfer torque and anisotropic conductance in spin orbit coupled graphene|Morteza Salehi,Razieh Beiranvand,Mohammad Alidoust###
(1238116, 1238120)
 We theoretically study spin-transfer torque (STT) in a graphene system withspin-orbit coupling (SOC).
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(F)
###Spin transfer torque and anisotropic conductance in spin orbit coupled graphene|Morteza Salehi,Razieh Beiranvand,Mohammad Alidoust###
(1238158, 1238160)
 We consider a graphene-based junction where thespin-orbit coupled region is sandwiched between two ferromagnetic (F) segments.
Featurization successful!
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SOC
###Spin transfer torque and anisotropic conductance in spin orbit coupled graphene|Morteza Salehi,Razieh Beiranvand,Mohammad Alidoust###
(1238202, 1238204)
 Our results show that the presence of SOC results inanisotropically modified STT, magnetoresistance, and charge conductance as afunction of relative magnetization misalignment in the F regions.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin transfer torque and anisotropic conductance in spin orbit coupled graphene|Morteza Salehi,Razieh Beiranvand,Mohammad Alidoust###
(1238215, 1238215)
 Our results show that the presence of SOC results inanisotropically modified STT, magnetoresistance, and charge conductance as afunction of relative magnetization misalignment in the F regions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Spin transfer torque and anisotropic conductance in spin orbit coupled graphene|Morteza Salehi,Razieh Beiranvand,Mohammad Alidoust###
(1238248, 1238248)
 Our results show that the presence of SOC results inanisotropically modified STT, magnetoresistance, and charge conductance as afunction of relative magnetization misalignment in the F regions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Spin transfer torque and anisotropic conductance in spin orbit coupled graphene|Morteza Salehi,Razieh Beiranvand,Mohammad Alidoust###
(1238310, 1238310)
 We have foundthat within the Klein regime, where particles hit the interfacesperpendicularly, the spin-polarized Dirac fermions transmit perfectly throughthe boundaries of an F-F junction (i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Spin transfer torque and anisotropic conductance in spin orbit coupled graphene|Morteza Salehi,Razieh Beiranvand,Mohammad Alidoust###
(1238312, 1238312)
 We have foundthat within the Klein regime, where particles hit the interfacesperpendicularly, the spin-polarized Dirac fermions transmit perfectly throughthe boundaries of an F-F junction (i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin transfer torque and anisotropic conductance in spin orbit coupled graphene|Morteza Salehi,Razieh Beiranvand,Mohammad Alidoust###
(1238350, 1238350)
, with zero reflection), regardless ofthe relative magnetization misalignment and exert zero STT.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin transfer torque and anisotropic conductance in spin orbit coupled graphene|Morteza Salehi,Razieh Beiranvand,Mohammad Alidoust###
(1238355, 1238355)
 In the presence ofSOC, however, due to band structure modification, a nonzero STT reappears.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SOC
###Spin transfer torque and anisotropic conductance in spin orbit coupled graphene|Morteza Salehi,Razieh Beiranvand,Mohammad Alidoust###
(1238364, 1238366)
 In the presence ofSOC, however, due to band structure modification, a nonzero STT reappears.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin transfer torque and anisotropic conductance in spin orbit coupled graphene|Morteza Salehi,Razieh Beiranvand,Mohammad Alidoust###
(1238387, 1238387)
 In the presence ofSOC, however, due to band structure modification, a nonzero STT reappears.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SOC
###Spin transfer torque and anisotropic conductance in spin orbit coupled graphene|Morteza Salehi,Razieh Beiranvand,Mohammad Alidoust###
(1238415, 1238417)
 Ourfindings can be exploited for experimentally examining proximity-induced SOCinto a graphene system<missing PERIOD>
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BK
###Magnetoresistance driven by the magnetic Berezinskii-Kosterlitz-Thouless transition|B. Flebus###
(1238468, 1238469)
 While the Berezinskii-Kosterlitz-Thouless transition (BKT) has been underintense scrutiny for decades, unambiguous experimental signatures in magneticsystems remain elusive.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BK
###Magnetoresistance driven by the magnetic Berezinskii-Kosterlitz-Thouless transition|B. Flebus###
(1238537, 1238538)
 Here, we investigate the interplay between electronicand magnetic degrees of freedom near the BKT<missing VAR> transition.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BK
###Magnetoresistance driven by the magnetic Berezinskii-Kosterlitz-Thouless transition|B. Flebus###
(1238689, 1238690)
 We show that electron scattering is responsible for atemperature-dependent magnetoresistance effect scaling as the density of thetopological defects, which is expected to increase dramatically above the BKT<missing VAR>transition temperature.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HgTe
###Localization of the Helical Edge States in the Absense of External Magnetic Field|A. V. Bubis,N. N. Mikhailov,S. A. Dvoretsky,A. G. Nasibulin,E. S. Tikhonov###
(1238888, 1238889)
 Here,we report the surprising localization of the edge states in an 8 nm HgTequantum well in zero magnetic field at millikelvin temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 8, 'nm', 0],[33.0, 0.5, 'K', 1],[92.0, 0.1, ',', 1],[114.0, 0.5, ',', 1],[169.0, 0.6, ',', 2]

B
###Localization of the Helical Edge States in the Absense of External Magnetic Field|A. V. Bubis,N. N. Mikhailov,S. A. Dvoretsky,A. G. Nasibulin,E. S. Tikhonov###
(1238950, 1238950)
 Additionally,the magnetoresistance data at 0.5 K for the edges few micrometers long suggeststhe field-dependent localization length l<missing VAR>Bpropto B-alpha, with alpharanging approximately from 1.6 to 2.8 at fields Blesssim0.1,textT<missing VAR>and alphaapprox1.1 at higher fields up to 0.5,textT<missing VAR>.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 8, 'nm', 1],[28.0, 0.5, 'K', 0],[31.0, 0.1, ',', 0],[53.0, 0.5, ',', 0],[108.0, 0.6, ',', 1]

B
###Localization of the Helical Edge States in the Absense of External Magnetic Field|A. V. Bubis,N. N. Mikhailov,S. A. Dvoretsky,A. G. Nasibulin,E. S. Tikhonov###
(1238953, 1238953)
 Additionally,the magnetoresistance data at 0.5 K for the edges few micrometers long suggeststhe field-dependent localization length l<missing VAR>Bpropto B-alpha, with alpharanging approximately from 1.6 to 2.8 at fields Blesssim0.1,textT<missing VAR>and alphaapprox1.1 at higher fields up to 0.5,textT<missing VAR>.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 8, 'nm', 1],[31.0, 0.5, 'K', 0],[28.0, 0.1, ',', 0],[50.0, 0.5, ',', 0],[105.0, 0.6, ',', 1]

B
###Localization of the Helical Edge States in the Absense of External Magnetic Field|A. V. Bubis,N. N. Mikhailov,S. A. Dvoretsky,A. G. Nasibulin,E. S. Tikhonov###
(1238979, 1238979)
 Additionally,the magnetoresistance data at 0.5 K for the edges few micrometers long suggeststhe field-dependent localization length l<missing VAR>Bpropto B-alpha, with alpharanging approximately from 1.6 to 2.8 at fields Blesssim0.1,textT<missing VAR>and alphaapprox1.1 at higher fields up to 0.5,textT<missing VAR>.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 8, 'nm', 1],[57.0, 0.5, 'K', 0],[2.0, 0.1, ',', 0],[24.0, 0.5, ',', 0],[79.0, 0.6, ',', 1]

In
###Localization of the Helical Edge States in the Absense of External Magnetic Field|A. V. Bubis,N. N. Mikhailov,S. A. Dvoretsky,A. G. Nasibulin,E. S. Tikhonov###
(1239009, 1239009)
 In the frame ofdisordered interacting edge, these values of alpha correspond to theLuttinger liquid parameters Kapprox 0.9-1.1 and Kapprox 0.6,respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 8, 'nm', 2],[87.0, 0.5, 'K', 1],[28.0, 0.1, ',', 1],[6.0, 0.5, ',', 1],[49.0, 0.6, ',', 0]

K
###Localization of the Helical Edge States in the Absense of External Magnetic Field|A. V. Bubis,N. N. Mikhailov,S. A. Dvoretsky,A. G. Nasibulin,E. S. Tikhonov###
(1239046, 1239046)
 In the frame ofdisordered interacting edge, these values of alpha correspond to theLuttinger liquid parameters Kapprox 0.9-1.1 and Kapprox 0.6,respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 8, 'nm', 2],[124.0, 0.5, 'K', 1],[65.0, 0.1, ',', 1],[43.0, 0.5, ',', 1],[12.0, 0.6, ',', 0]

K
###Localization of the Helical Edge States in the Absense of External Magnetic Field|A. V. Bubis,N. N. Mikhailov,S. A. Dvoretsky,A. G. Nasibulin,E. S. Tikhonov###
(1239055, 1239055)
 In the frame ofdisordered interacting edge, these values of alpha correspond to theLuttinger liquid parameters Kapprox 0.9-1.1 and Kapprox 0.6,respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 8, 'nm', 2],[133.0, 0.5, 'K', 1],[74.0, 0.1, ',', 1],[52.0, 0.5, ',', 1],[3.0, 0.6, ',', 0]

SrVO3
###Transport properties around the metal-insulator transition for SrVO3 ultrathin films fabricated by electrochemical etching|Hikaru Okuma,Yumiko Katayama,Keisuke Otomo,Kazunori Ueno###
(1239770, 1239773)
Transport properties around the metal-insulator transition for SrVO3 ultrathin films fabricated by electrochemical etching.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 3, 'monolayers', 1],[186.0, 200, 'K', 4],[200.0, 10, 'ML', 4],[280.0, 3, 'ML', 5]

SrVO3
###Transport properties around the metal-insulator transition for SrVO3 ultrathin films fabricated by electrochemical etching|Hikaru Okuma,Yumiko Katayama,Keisuke Otomo,Kazunori Ueno###
(1239805, 1239808)
 By using electrochemical etching, we fabricated conductive ultrathin SrVO3(SVO) films that exhibited metallic behavior down to 3 monolayers (ML).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 3, 'monolayers', 0],[151.0, 200, 'K', 3],[165.0, 10, 'ML', 3],[245.0, 3, 'ML', 4]

(SVO)
###Transport properties around the metal-insulator transition for SrVO3 ultrathin films fabricated by electrochemical etching|Hikaru Okuma,Yumiko Katayama,Keisuke Otomo,Kazunori Ueno###
(1239811, 1239815)
 By using electrochemical etching, we fabricated conductive ultrathin SrVO3(SVO) films that exhibited metallic behavior down to 3 monolayers (ML).
Featurization successful!
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 3, 'monolayers', 0],[144.0, 200, 'K', 3],[158.0, 10, 'ML', 3],[238.0, 3, 'ML', 4]

SVO
###Transport properties around the metal-insulator transition for SrVO3 ultrathin films fabricated by electrochemical etching|Hikaru Okuma,Yumiko Katayama,Keisuke Otomo,Kazunori Ueno###
(1239933, 1239935)
 This is incontrast to the insulating behavior found for as-deposited SVO ultrathin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 3, 'monolayers', 2],[24.0, 200, 'K', 1],[38.0, 10, 'ML', 1],[118.0, 3, 'ML', 2]

S
###A Compact Model for Scalable MTJ Simulation|Fernando García-Redondo,Pranay Prabhat,Mudit Bhargava,Cyrille Dray###
(1240153, 1240153)
 This paper presents a physics-based modeling framework for the analysis andtransient simulation of circuits containing Spin-Transfer Torque (STT) MagneticTunnel Junction (MTJ) devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[231.0, 28, 'nm', 3]

V
###A Compact Model for Scalable MTJ Simulation|Fernando García-Redondo,Pranay Prabhat,Mudit Bhargava,Cyrille Dray###
(1240226, 1240226)
 The framework provides the tools to analyze thestochastic behavior of MTJs and to generate Verilog-A compact models for theirsimulation in large VL<missing VAR>SI designs, addressing the need for an industry-readymodel accounting for real-world reliability and scalability requirements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 28, 'nm', 2]

SI
###A Compact Model for Scalable MTJ Simulation|Fernando García-Redondo,Pranay Prabhat,Mudit Bhargava,Cyrille Dray###
(1240228, 1240229)
 The framework provides the tools to analyze thestochastic behavior of MTJs and to generate Verilog-A compact models for theirsimulation in large VL<missing VAR>SI designs, addressing the need for an industry-readymodel accounting for real-world reliability and scalability requirements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 28, 'nm', 2]

S
###A Compact Model for Scalable MTJ Simulation|Fernando García-Redondo,Pranay Prabhat,Mudit Bhargava,Cyrille Dray###
(1240296, 1240296)
Device dynamics are described by the Landau-Lifshitz-Gilbert-Slonczewsky(s-LLGS ) stochastic magnetization considering Voltage-Controlled MagneticAnisotropy (VCM<missing VAR>A) and the non-negligible statistical effects caused by thermalnoise.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 28, 'nm', 1]

VC
###A Compact Model for Scalable MTJ Simulation|Fernando García-Redondo,Pranay Prabhat,Mudit Bhargava,Cyrille Dray###
(1240316, 1240317)
Device dynamics are described by the Landau-Lifshitz-Gilbert-Slonczewsky(s-LLGS ) stochastic magnetization considering Voltage-Controlled MagneticAnisotropy (VCM<missing VAR>A) and the non-negligible statistical effects caused by thermalnoise.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 28, 'nm', 1]

OO
###A Compact Model for Scalable MTJ Simulation|Fernando García-Redondo,Pranay Prabhat,Mudit Bhargava,Cyrille Dray###
(1240356, 1240357)
 Model behavior is validated against the OOMMF magnetic simulator and itsperformance is characterized on a 1-Mb 28 nm Magnetoresistive-RAM (MRAM) memoryproduct.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 28, 'nm', 0]

F
###A Compact Model for Scalable MTJ Simulation|Fernando García-Redondo,Pranay Prabhat,Mudit Bhargava,Cyrille Dray###
(1240360, 1240360)
 Model behavior is validated against the OOMMF magnetic simulator and itsperformance is characterized on a 1-Mb 28 nm Magnetoresistive-RAM (MRAM) memoryproduct.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 28, 'nm', 0]

CoFeB/C60
###Spin pumping and inverse spin Hall effect in CoFeB/C$_{60}$ bilayers|Purbasha Sharangi,Braj Bhusan Singh,Sagarika Nayak,Subhankar Bedanta###
(1240429, 1240434)
Spin pumping and inverse spin Hall effect in CoFeB/C60 bilayers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

F
###Spin pumping and inverse spin Hall effect in CoFeB/C$_{60}$ bilayers|Purbasha Sharangi,Braj Bhusan Singh,Sagarika Nayak,Subhankar Bedanta###
(1240460, 1240460)
 Pure spin current based research is mostly focused on ferromagnet (FM)/heavymetal (HM) system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Spin pumping and inverse spin Hall effect in CoFeB/C$_{60}$ bilayers|Purbasha Sharangi,Braj Bhusan Singh,Sagarika Nayak,Subhankar Bedanta###
(1240470, 1240470)
 Pure spin current based research is mostly focused on ferromagnet (FM)/heavymetal (HM) system.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(SOC)
###Spin pumping and inverse spin Hall effect in CoFeB/C$_{60}$ bilayers|Purbasha Sharangi,Braj Bhusan Singh,Sagarika Nayak,Subhankar Bedanta###
(1240491, 1240495)
 Because of the high spin orbit coupling (SOC) these HMsexhibit short spin diffusion length and therefore possess challenges for deviceapplication.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Spin pumping and inverse spin Hall effect in CoFeB/C$_{60}$ bilayers|Purbasha Sharangi,Braj Bhusan Singh,Sagarika Nayak,Subhankar Bedanta###
(1240499, 1240499)
 Because of the high spin orbit coupling (SOC) these HMsexhibit short spin diffusion length and therefore possess challenges for deviceapplication.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SOC
###Spin pumping and inverse spin Hall effect in CoFeB/C$_{60}$ bilayers|Purbasha Sharangi,Braj Bhusan Singh,Sagarika Nayak,Subhankar Bedanta###
(1240531, 1240533)
 Low SOC (elements of light weight) and large spin diffusion lengthmake the organic semiconductors (OSCs) suitable for future spintronicapplications.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(OSCs)
###Spin pumping and inverse spin Hall effect in CoFeB/C$_{60}$ bilayers|Purbasha Sharangi,Braj Bhusan Singh,Sagarika Nayak,Subhankar Bedanta###
(1240564, 1240568)
 Low SOC (elements of light weight) and large spin diffusion lengthmake the organic semiconductors (OSCs) suitable for future spintronicapplications.
Featurization successful!
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C60
###Spin pumping and inverse spin Hall effect in CoFeB/C$_{60}$ bilayers|Purbasha Sharangi,Braj Bhusan Singh,Sagarika Nayak,Subhankar Bedanta###
(1240618, 1240619)
 From theoretical model it is explained that, due to pi -sigma hybridization the curvature of the C60 molecules may increase theSOC strength.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SOC
###Spin pumping and inverse spin Hall effect in CoFeB/C$_{60}$ bilayers|Purbasha Sharangi,Braj Bhusan Singh,Sagarika Nayak,Subhankar Bedanta###
(1240630, 1240632)
 From theoretical model it is explained that, due to pi -sigma hybridization the curvature of the C60 molecules may increase theSOC strength.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ISH
###Spin pumping and inverse spin Hall effect in CoFeB/C$_{60}$ bilayers|Purbasha Sharangi,Braj Bhusan Singh,Sagarika Nayak,Subhankar Bedanta###
(1240662, 1240664)
 Here, we have investigated spin pumping and inverse spin halleffect (ISHE) in CoFeB/C60 bilayer system using coplanar wave guide basedferromagnetic resonance (CPW-FMR) set-up.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFeB/C60
###Spin pumping and inverse spin Hall effect in CoFeB/C$_{60}$ bilayers|Purbasha Sharangi,Braj Bhusan Singh,Sagarika Nayak,Subhankar Bedanta###
(1240670, 1240675)
 Here, we have investigated spin pumping and inverse spin halleffect (ISHE) in CoFeB/C60 bilayer system using coplanar wave guide basedferromagnetic resonance (CPW-FMR) set-up.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

CPW
###Spin pumping and inverse spin Hall effect in CoFeB/C$_{60}$ bilayers|Purbasha Sharangi,Braj Bhusan Singh,Sagarika Nayak,Subhankar Bedanta###
(1240697, 1240699)
 Here, we have investigated spin pumping and inverse spin halleffect (ISHE) in CoFeB/C60 bilayer system using coplanar wave guide basedferromagnetic resonance (CPW-FMR) set-up.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Spin pumping and inverse spin Hall effect in CoFeB/C$_{60}$ bilayers|Purbasha Sharangi,Braj Bhusan Singh,Sagarika Nayak,Subhankar Bedanta###
(1240701, 1240701)
 Here, we have investigated spin pumping and inverse spin halleffect (ISHE) in CoFeB/C60 bilayer system using coplanar wave guide basedferromagnetic resonance (CPW-FMR) set-up.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ISH
###Spin pumping and inverse spin Hall effect in CoFeB/C$_{60}$ bilayers|Purbasha Sharangi,Braj Bhusan Singh,Sagarika Nayak,Subhankar Bedanta###
(1240722, 1240724)
 We have performed angle dependentISHE<missing VAR> measurement to disentangle the spin rectification effects for exampleanisotropic magnetoresistance, anomalous Hall effect etc.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Spin pumping and inverse spin Hall effect in CoFeB/C$_{60}$ bilayers|Purbasha Sharangi,Braj Bhusan Singh,Sagarika Nayak,Subhankar Bedanta###
(1240791, 1240791)
 Further, effectivespin mixing conductance (g<missing VAR>effuparrowdownarrow) and spin Hall angle(thetaSH) for C60 have been reported here.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C60
###Spin pumping and inverse spin Hall effect in CoFeB/C$_{60}$ bilayers|Purbasha Sharangi,Braj Bhusan Singh,Sagarika Nayak,Subhankar Bedanta###
(1240796, 1240797)
 Further, effectivespin mixing conductance (g<missing VAR>effuparrowdownarrow) and spin Hall angle(thetaSH) for C60 have been reported here.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SH
###Spin pumping and inverse spin Hall effect in CoFeB/C$_{60}$ bilayers|Purbasha Sharangi,Braj Bhusan Singh,Sagarika Nayak,Subhankar Bedanta###
(1240818, 1240819)
 The evaluated value forthetaSH is 0.055.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sb
###Probing the Topological Surface States through Magnetoresistance and Ultrafast Charge Carrier Dynamics in (Bi/Sb)2Te3|Prince Sharma,Yogesh Kumar,V. P. S. Awana,Mahesh Kumar###
(1240863, 1240863)
Probing the Topological Surface States through Magnetoresistance and Ultrafast Charge Carrier Dynamics in (Bi/Sb)2Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 5, 'K', 2],[149.0, 5, 'K', 3],[152.0, 100, 'K', 3],[262.0, 5, 'K', 5]

Te3
###Probing the Topological Surface States through Magnetoresistance and Ultrafast Charge Carrier Dynamics in (Bi/Sb)2Te3|Prince Sharma,Yogesh Kumar,V. P. S. Awana,Mahesh Kumar###
(1240866, 1240867)
Probing the Topological Surface States through Magnetoresistance and Ultrafast Charge Carrier Dynamics in (Bi/Sb)2Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 5, 'K', 2],[145.0, 5, 'K', 3],[148.0, 100, 'K', 3],[258.0, 5, 'K', 5]

In
###Probing the Topological Surface States through Magnetoresistance and Ultrafast Charge Carrier Dynamics in (Bi/Sb)2Te3|Prince Sharma,Yogesh Kumar,V. P. S. Awana,Mahesh Kumar###
(1240898, 1240898)
 In this article the micro-flakes ofsingle-crystalline topological insulators Bi2Te3 and Sb2Te3 are exploredthrough physical parameter measurement at low temperatures and thereby thecharge carrier dynamics are investigated at 5K to study the various opticaltransitions related to these surface states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 5, 'K', 0],[114.0, 5, 'K', 1],[117.0, 100, 'K', 1],[227.0, 5, 'K', 3]

Bi2Te3
###Probing the Topological Surface States through Magnetoresistance and Ultrafast Charge Carrier Dynamics in (Bi/Sb)2Te3|Prince Sharma,Yogesh Kumar,V. P. S. Awana,Mahesh Kumar###
(1240921, 1240924)
 In this article the micro-flakes ofsingle-crystalline topological insulators Bi2Te3 and Sb2Te3 are exploredthrough physical parameter measurement at low temperatures and thereby thecharge carrier dynamics are investigated at 5K to study the various opticaltransitions related to these surface states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 5, 'K', 0],[88.0, 5, 'K', 1],[91.0, 100, 'K', 1],[201.0, 5, 'K', 3]

Sb2Te3
###Probing the Topological Surface States through Magnetoresistance and Ultrafast Charge Carrier Dynamics in (Bi/Sb)2Te3|Prince Sharma,Yogesh Kumar,V. P. S. Awana,Mahesh Kumar###
(1240928, 1240931)
 In this article the micro-flakes ofsingle-crystalline topological insulators Bi2Te3 and Sb2Te3 are exploredthrough physical parameter measurement at low temperatures and thereby thecharge carrier dynamics are investigated at 5K to study the various opticaltransitions related to these surface states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 5, 'K', 0],[81.0, 5, 'K', 1],[84.0, 100, 'K', 1],[194.0, 5, 'K', 3]

K
###Probing the Topological Surface States through Magnetoresistance and Ultrafast Charge Carrier Dynamics in (Bi/Sb)2Te3|Prince Sharma,Yogesh Kumar,V. P. S. Awana,Mahesh Kumar###
(1241112, 1241112)
 Further, theultrafast femtosecond transient reflectance spectroscopy is performed atdifferent temperatures, varying from a room temperature (300K) to a lowtemperature of 5K, to find the T<missing VAR>SS related transitions at low temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 5, 'K', 3],[100.0, 5, 'K', 2],[97.0, 100, 'K', 2],[13.0, 5, 'K', 0]

SS
###Probing the Topological Surface States through Magnetoresistance and Ultrafast Charge Carrier Dynamics in (Bi/Sb)2Te3|Prince Sharma,Yogesh Kumar,V. P. S. Awana,Mahesh Kumar###
(1241135, 1241136)
 Further, theultrafast femtosecond transient reflectance spectroscopy is performed atdifferent temperatures, varying from a room temperature (300K) to a lowtemperature of 5K, to find the T<missing VAR>SS related transitions at low temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 5, 'K', 3],[123.0, 5, 'K', 2],[120.0, 100, 'K', 2],[10.0, 5, 'K', 0]

Ta3SiTe6
###Signature of topological non-trivial band structure in Ta$_{3}$SiTe$_{6}$|Shubhankar Roy,Ratnadwip Singha,Arup Ghosh,Prabhat Mandal###
(1241173, 1241177)
Signature of topological non-trivial band structure in Ta3SiTe6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ta3SiTe6
###Signature of topological non-trivial band structure in Ta$_{3}$SiTe$_{6}$|Shubhankar Roy,Ratnadwip Singha,Arup Ghosh,Prabhat Mandal###
(1241247, 1241251)
Ta3SiTe6 is a newly predicted topological semimetal with fourfolddegenerate nodal-line crossing in absence of spin-orbit coupling (SOC) and anhourglass Dirac loop, when SOC is included.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(SOC)
###Signature of topological non-trivial band structure in Ta$_{3}$SiTe$_{6}$|Shubhankar Roy,Ratnadwip Singha,Arup Ghosh,Prabhat Mandal###
(1241290, 1241294)
Ta3SiTe6 is a newly predicted topological semimetal with fourfolddegenerate nodal-line crossing in absence of spin-orbit coupling (SOC) and anhourglass Dirac loop, when SOC is included.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SOC
###Signature of topological non-trivial band structure in Ta$_{3}$SiTe$_{6}$|Shubhankar Roy,Ratnadwip Singha,Arup Ghosh,Prabhat Mandal###
(1241310, 1241312)
Ta3SiTe6 is a newly predicted topological semimetal with fourfolddegenerate nodal-line crossing in absence of spin-orbit coupling (SOC) and anhourglass Dirac loop, when SOC is included.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Signature of topological non-trivial band structure in Ta$_{3}$SiTe$_{6}$|Shubhankar Roy,Ratnadwip Singha,Arup Ghosh,Prabhat Mandal###
(1241383, 1241383)
 In this work, we present the detailed magnetotransportproperties of single crystalline Ta3SiTe6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ta3SiTe6
###Signature of topological non-trivial band structure in Ta$_{3}$SiTe$_{6}$|Shubhankar Roy,Ratnadwip Singha,Arup Ghosh,Prabhat Mandal###
(1241409, 1241413)
 In this work, we present the detailed magnetotransportproperties of single crystalline Ta3SiTe6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Identifying intrinsic and extrinsic mechanisms of anisotropic magnetoresistance with terahertz probes|Ji-Ho Park,Hye-Won Ko,Jeong-Mok Kim,Jungmin Park,Seung-Young Park,Younghun Jo,Byong-Guk Park,Se Kwon Kim,Kyung-Jin Lee,Kab-Jin Kim###
(1241638, 1241638)
 In this work, using terahertz time-domain spectroscopy, weunambiguously disentangle the intrinsic and extrinsic contributions to theanisotropic magnetoresistance (AMR) of a permalloy film.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr2Ge2Te6
###Electrically Controllable van der Waals Antiferromagnetic Spin Valve|Xue-Chao Zhai,Ziming,Xu,Qirui Cui,Yingmei Zhu,Hongxin Yang,Yaroslav M. Blanter###
(1242106, 1242111)
 It is shown from densityfunctional calculations that bilayer graphene encapsulated by two atomic layersof Cr2Ge2Te6 provides a material platform to realize theantiferromagnetism, which is robust against the required vertical electricfields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SmAlSi
###Shubnikov-de Haas Oscillations and Nontrivial Topological State in a New Weyl Semimetal Candidate SmAlSi|Longmeng Xu,Haoyu Niu,Yuming Bai,Haipeng Zhu,Songliu Yuan,Xiong He,Yang Yang,Zhengcai Xia,Lingxiao Zhao,Zhaoming Tian###
(1242187, 1242189)
Shubnikov-de Haas Oscillations and Nontrivial Topological State in a New Weyl Semimetal Candidate SmAlSi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 5200, '%', 2],[86.0, 2, 'K', 2],[88.0, 48, 'T', 2],[131.0, 1.52, 'at', 2],[143.0, 15, 'T', 2],[151.0, 1, 'under', 2],[164.0, 18, 'T', 2],[245.0, 2, 'K', 3]

SmAlSi
###Shubnikov-de Haas Oscillations and Nontrivial Topological State in a New Weyl Semimetal Candidate SmAlSi|Longmeng Xu,Haoyu Niu,Yuming Bai,Haipeng Zhu,Songliu Yuan,Xiong He,Yang Yang,Zhengcai Xia,Lingxiao Zhao,Zhaoming Tian###
(1242225, 1242227)
 We perform the quantum magnetotransport measurements and first-principlescalculations on high quality single crystals of SmAlSi, a new topological Weylsemimetal candidate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 5200, '%', 1],[48.0, 2, 'K', 1],[50.0, 48, 'T', 1],[93.0, 1.52, 'at', 1],[105.0, 15, 'T', 1],[113.0, 1, 'under', 1],[126.0, 18, 'T', 1],[207.0, 2, 'K', 2]

At
###Shubnikov-de Haas Oscillations and Nontrivial Topological State in a New Weyl Semimetal Candidate SmAlSi|Longmeng Xu,Haoyu Niu,Yuming Bai,Haipeng Zhu,Songliu Yuan,Xiong He,Yang Yang,Zhengcai Xia,Lingxiao Zhao,Zhaoming Tian###
(1242244, 1242244)
 At low temperatures, SmAlSi exhibits large non-saturatedmagnetoresistance (MR)5200% (at 2 K, 48 T) and prominent Shubnikov-de Haas(SdH) oscillations, where M<missing VAR>Rs follow the power-law field dependence withexponent 1.52 at low fields (mu0H < 15 T) and linear behavior 1 under highfields (mu0H > 18 T).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 5200, '%', 0],[31.0, 2, 'K', 0],[33.0, 48, 'T', 0],[76.0, 1.52, 'at', 0],[88.0, 15, 'T', 0],[96.0, 1, 'under', 0],[109.0, 18, 'T', 0],[190.0, 2, 'K', 1]

SmAlSi
###Shubnikov-de Haas Oscillations and Nontrivial Topological State in a New Weyl Semimetal Candidate SmAlSi|Longmeng Xu,Haoyu Niu,Yuming Bai,Haipeng Zhu,Songliu Yuan,Xiong He,Yang Yang,Zhengcai Xia,Lingxiao Zhao,Zhaoming Tian###
(1242251, 1242253)
 At low temperatures, SmAlSi exhibits large non-saturatedmagnetoresistance (MR)5200% (at 2 K, 48 T) and prominent Shubnikov-de Haas(SdH) oscillations, where M<missing VAR>Rs follow the power-law field dependence withexponent 1.52 at low fields (mu0H < 15 T) and linear behavior 1 under highfields (mu0H > 18 T).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 5200, '%', 0],[22.0, 2, 'K', 0],[24.0, 48, 'T', 0],[67.0, 1.52, 'at', 0],[79.0, 15, 'T', 0],[87.0, 1, 'under', 0],[100.0, 18, 'T', 0],[181.0, 2, 'K', 1]

H
###Shubnikov-de Haas Oscillations and Nontrivial Topological State in a New Weyl Semimetal Candidate SmAlSi|Longmeng Xu,Haoyu Niu,Yuming Bai,Haipeng Zhu,Songliu Yuan,Xiong He,Yang Yang,Zhengcai Xia,Lingxiao Zhao,Zhaoming Tian###
(1242293, 1242293)
 At low temperatures, SmAlSi exhibits large non-saturatedmagnetoresistance (MR)5200% (at 2 K, 48 T) and prominent Shubnikov-de Haas(SdH) oscillations, where M<missing VAR>Rs follow the power-law field dependence withexponent 1.52 at low fields (mu0H < 15 T) and linear behavior 1 under highfields (mu0H > 18 T).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 5200, '%', 0],[18.0, 2, 'K', 0],[16.0, 48, 'T', 0],[27.0, 1.52, 'at', 0],[39.0, 15, 'T', 0],[47.0, 1, 'under', 0],[60.0, 18, 'T', 0],[141.0, 2, 'K', 1]

H
###Shubnikov-de Haas Oscillations and Nontrivial Topological State in a New Weyl Semimetal Candidate SmAlSi|Longmeng Xu,Haoyu Niu,Yuming Bai,Haipeng Zhu,Songliu Yuan,Xiong He,Yang Yang,Zhengcai Xia,Lingxiao Zhao,Zhaoming Tian###
(1242329, 1242329)
 At low temperatures, SmAlSi exhibits large non-saturatedmagnetoresistance (MR)5200% (at 2 K, 48 T) and prominent Shubnikov-de Haas(SdH) oscillations, where M<missing VAR>Rs follow the power-law field dependence withexponent 1.52 at low fields (mu0H < 15 T) and linear behavior 1 under highfields (mu0H > 18 T).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 5200, '%', 0],[54.0, 2, 'K', 0],[52.0, 48, 'T', 0],[9.0, 1.52, 'at', 0],[3.0, 15, 'T', 0],[11.0, 1, 'under', 0],[24.0, 18, 'T', 0],[105.0, 2, 'K', 1]

H
###Shubnikov-de Haas Oscillations and Nontrivial Topological State in a New Weyl Semimetal Candidate SmAlSi|Longmeng Xu,Haoyu Niu,Yuming Bai,Haipeng Zhu,Songliu Yuan,Xiong He,Yang Yang,Zhengcai Xia,Lingxiao Zhao,Zhaoming Tian###
(1242350, 1242350)
 At low temperatures, SmAlSi exhibits large non-saturatedmagnetoresistance (MR)5200% (at 2 K, 48 T) and prominent Shubnikov-de Haas(SdH) oscillations, where M<missing VAR>Rs follow the power-law field dependence withexponent 1.52 at low fields (mu0H < 15 T) and linear behavior 1 under highfields (mu0H > 18 T).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 5200, '%', 0],[75.0, 2, 'K', 0],[73.0, 48, 'T', 0],[30.0, 1.52, 'at', 0],[18.0, 15, 'T', 0],[10.0, 1, 'under', 0],[3.0, 18, 'T', 0],[84.0, 2, 'K', 1]

H
###Shubnikov-de Haas Oscillations and Nontrivial Topological State in a New Weyl Semimetal Candidate SmAlSi|Longmeng Xu,Haoyu Niu,Yuming Bai,Haipeng Zhu,Songliu Yuan,Xiong He,Yang Yang,Zhengcai Xia,Lingxiao Zhao,Zhaoming Tian###
(1242368, 1242368)
 The analysis of angle dependent SdH oscillationsreveal two fundamental frequencies originated from the Fermi surface (FS)pockets with non-trivial pi Berry phases, small cyclotron mass andelectron-hole compensation with high mobility at 2 K.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 5200, '%', 1],[93.0, 2, 'K', 1],[91.0, 48, 'T', 1],[48.0, 1.52, 'at', 1],[36.0, 15, 'T', 1],[28.0, 1, 'under', 1],[15.0, 18, 'T', 1],[66.0, 2, 'K', 0]

(FS)
###Shubnikov-de Haas Oscillations and Nontrivial Topological State in a New Weyl Semimetal Candidate SmAlSi|Longmeng Xu,Haoyu Niu,Yuming Bai,Haipeng Zhu,Songliu Yuan,Xiong He,Yang Yang,Zhengcai Xia,Lingxiao Zhao,Zhaoming Tian###
(1242391, 1242394)
 The analysis of angle dependent SdH oscillationsreveal two fundamental frequencies originated from the Fermi surface (FS)pockets with non-trivial pi Berry phases, small cyclotron mass andelectron-hole compensation with high mobility at 2 K.
Featurization successful!
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 5200, '%', 1],[116.0, 2, 'K', 1],[114.0, 48, 'T', 1],[71.0, 1.52, 'at', 1],[59.0, 15, 'T', 1],[51.0, 1, 'under', 1],[38.0, 18, 'T', 1],[40.0, 2, 'K', 0]

In
###Shubnikov-de Haas Oscillations and Nontrivial Topological State in a New Weyl Semimetal Candidate SmAlSi|Longmeng Xu,Haoyu Niu,Yuming Bai,Haipeng Zhu,Songliu Yuan,Xiong He,Yang Yang,Zhengcai Xia,Lingxiao Zhao,Zhaoming Tian###
(1242437, 1242437)
 In combination with thecalculated nontrivial electronic band structure, SmAlSi is proposed to be aparadigm for understanding the Weyl fermions in the topological materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 5200, '%', 2],[162.0, 2, 'K', 2],[160.0, 48, 'T', 2],[117.0, 1.52, 'at', 2],[105.0, 15, 'T', 2],[97.0, 1, 'under', 2],[84.0, 18, 'T', 2],[3.0, 2, 'K', 1]

SmAlSi
###Shubnikov-de Haas Oscillations and Nontrivial Topological State in a New Weyl Semimetal Candidate SmAlSi|Longmeng Xu,Haoyu Niu,Yuming Bai,Haipeng Zhu,Songliu Yuan,Xiong He,Yang Yang,Zhengcai Xia,Lingxiao Zhao,Zhaoming Tian###
(1242457, 1242459)
 In combination with thecalculated nontrivial electronic band structure, SmAlSi is proposed to be aparadigm for understanding the Weyl fermions in the topological materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[187.0, 5200, '%', 2],[182.0, 2, 'K', 2],[180.0, 48, 'T', 2],[137.0, 1.52, 'at', 2],[125.0, 15, 'T', 2],[117.0, 1, 'under', 2],[104.0, 18, 'T', 2],[23.0, 2, 'K', 1]

Eu11InSb9
###Narrow-gap semiconducting behavior in antiferromagnetic Eu$_{11}$InSb$_9$|S. S. Fender,S. M. Thomas,F. Ronning,E. D. Bauer,J. D. Thompson,P. F. S. Rosa###
(1242513, 1242517)
Narrow-gap semiconducting behavior in antiferromagnetic Eu11InSb9.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.047619047619047616,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0.5238095238095238,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Eu11InSb9
###Narrow-gap semiconducting behavior in antiferromagnetic Eu$_{11}$InSb$_9$|S. S. Fender,S. M. Thomas,F. Ronning,E. D. Bauer,J. D. Thompson,P. F. S. Rosa###
(1242539, 1242543)
 Here we investigate the thermodynamic and electronic properties ofEu11InSb9 single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.047619047619047616,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0.5238095238095238,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Eu11InSb9
###Narrow-gap semiconducting behavior in antiferromagnetic Eu$_{11}$InSb$_9$|S. S. Fender,S. M. Thomas,F. Ronning,E. D. Bauer,J. D. Thompson,P. F. S. Rosa###
(1242561, 1242565)
 Electrical transport data show thatEu11InSb9 has a semiconducting ground state with a relatively narrowband gap of 320meV.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.047619047619047616,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0.5238095238095238,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Narrow-gap semiconducting behavior in antiferromagnetic Eu$_{11}$InSb$_9$|S. S. Fender,S. M. Thomas,F. Ronning,E. D. Bauer,J. D. Thompson,P. F. S. Rosa###
(1242594, 1242594)
 Electrical transport data show thatEu11InSb9 has a semiconducting ground state with a relatively narrowband gap of 320meV.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N19.3K
###Narrow-gap semiconducting behavior in antiferromagnetic Eu$_{11}$InSb$_9$|S. S. Fender,S. M. Thomas,F. Ronning,E. D. Bauer,J. D. Thompson,P. F. S. Rosa###
(1242663, 1242666)
 Specific heat, magnetic susceptibility, and electrical resistivitymeasurements reveal three phase transitions at T<missing VAR>N19.3K, T<missing VAR>N2 8.3K,and T<missing VAR>N3 4.3K.
Featurization terminated normally.
0,0,0,0,0,0,0.9507389162561576,0,0,0,0,0,0,0,0,0,0,0,0.04926108374384236,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N2
###Narrow-gap semiconducting behavior in antiferromagnetic Eu$_{11}$InSb$_9$|S. S. Fender,S. M. Thomas,F. Ronning,E. D. Bauer,J. D. Thompson,P. F. S. Rosa###
(1242670, 1242671)
 Specific heat, magnetic susceptibility, and electrical resistivitymeasurements reveal three phase transitions at T<missing VAR>N19.3K, T<missing VAR>N2 8.3K,and T<missing VAR>N3 4.3K.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Narrow-gap semiconducting behavior in antiferromagnetic Eu$_{11}$InSb$_9$|S. S. Fender,S. M. Thomas,F. Ronning,E. D. Bauer,J. D. Thompson,P. F. S. Rosa###
(1242674, 1242674)
 Specific heat, magnetic susceptibility, and electrical resistivitymeasurements reveal three phase transitions at T<missing VAR>N19.3K, T<missing VAR>N2 8.3K,and T<missing VAR>N3 4.3K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N3
###Narrow-gap semiconducting behavior in antiferromagnetic Eu$_{11}$InSb$_9$|S. S. Fender,S. M. Thomas,F. Ronning,E. D. Bauer,J. D. Thompson,P. F. S. Rosa###
(1242681, 1242682)
 Specific heat, magnetic susceptibility, and electrical resistivitymeasurements reveal three phase transitions at T<missing VAR>N19.3K, T<missing VAR>N2 8.3K,and T<missing VAR>N3 4.3K.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Narrow-gap semiconducting behavior in antiferromagnetic Eu$_{11}$InSb$_9$|S. S. Fender,S. M. Thomas,F. Ronning,E. D. Bauer,J. D. Thompson,P. F. S. Rosa###
(1242685, 1242685)
 Specific heat, magnetic susceptibility, and electrical resistivitymeasurements reveal three phase transitions at T<missing VAR>N19.3K, T<missing VAR>N2 8.3K,and T<missing VAR>N3 4.3K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Eu5In2Sb6
###Narrow-gap semiconducting behavior in antiferromagnetic Eu$_{11}$InSb$_9$|S. S. Fender,S. M. Thomas,F. Ronning,E. D. Bauer,J. D. Thompson,P. F. S. Rosa###
(1242690, 1242695)
 Unlike Eu5In2Sb6, a relatedeuropium-containing Zintl compound, no colossal magnetoresistance (CMR) isobserved in Eu11InSb9.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15384615384615385,0,0.46153846153846156,0,0,0,0,0,0,0,0,0,0,0,0.38461538461538464,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Narrow-gap semiconducting behavior in antiferromagnetic Eu$_{11}$InSb$_9$|S. S. Fender,S. M. Thomas,F. Ronning,E. D. Bauer,J. D. Thompson,P. F. S. Rosa###
(1242719, 1242719)
 Unlike Eu5In2Sb6, a relatedeuropium-containing Zintl compound, no colossal magnetoresistance (CMR) isobserved in Eu11InSb9.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Eu11InSb9
###Narrow-gap semiconducting behavior in antiferromagnetic Eu$_{11}$InSb$_9$|S. S. Fender,S. M. Thomas,F. Ronning,E. D. Bauer,J. D. Thompson,P. F. S. Rosa###
(1242731, 1242735)
 Unlike Eu5In2Sb6, a relatedeuropium-containing Zintl compound, no colossal magnetoresistance (CMR) isobserved in Eu11InSb9.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.047619047619047616,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0.5238095238095238,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Narrow-gap semiconducting behavior in antiferromagnetic Eu$_{11}$InSb$_9$|S. S. Fender,S. M. Thomas,F. Ronning,E. D. Bauer,J. D. Thompson,P. F. S. Rosa###
(1242748, 1242748)
 We attribute the absence of CMR to the smallercarrier density and the larger distance between Eu ions and In-Sb polyhedra inEu11InSb9.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Eu
###Narrow-gap semiconducting behavior in antiferromagnetic Eu$_{11}$InSb$_9$|S. S. Fender,S. M. Thomas,F. Ronning,E. D. Bauer,J. D. Thompson,P. F. S. Rosa###
(1242773, 1242773)
 We attribute the absence of CMR to the smallercarrier density and the larger distance between Eu ions and In-Sb polyhedra inEu11InSb9.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Narrow-gap semiconducting behavior in antiferromagnetic Eu$_{11}$InSb$_9$|S. S. Fender,S. M. Thomas,F. Ronning,E. D. Bauer,J. D. Thompson,P. F. S. Rosa###
(1242779, 1242779)
 We attribute the absence of CMR to the smallercarrier density and the larger distance between Eu ions and In-Sb polyhedra inEu11InSb9.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sb
###Narrow-gap semiconducting behavior in antiferromagnetic Eu$_{11}$InSb$_9$|S. S. Fender,S. M. Thomas,F. Ronning,E. D. Bauer,J. D. Thompson,P. F. S. Rosa###
(1242781, 1242781)
 We attribute the absence of CMR to the smallercarrier density and the larger distance between Eu ions and In-Sb polyhedra inEu11InSb9.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Eu11InSb9
###Narrow-gap semiconducting behavior in antiferromagnetic Eu$_{11}$InSb$_9$|S. S. Fender,S. M. Thomas,F. Ronning,E. D. Bauer,J. D. Thompson,P. F. S. Rosa###
(1242788, 1242792)
 We attribute the absence of CMR to the smallercarrier density and the larger distance between Eu ions and In-Sb polyhedra inEu11InSb9.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.047619047619047616,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0.5238095238095238,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Eu11InSb9
###Narrow-gap semiconducting behavior in antiferromagnetic Eu$_{11}$InSb$_9$|S. S. Fender,S. M. Thomas,F. Ronning,E. D. Bauer,J. D. Thompson,P. F. S. Rosa###
(1242803, 1242807)
 Our results indicate that Eu11InSb9 has potentialapplications as a thermoelectric material through doping or as along-wavelength detector due to its narrow gap.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.047619047619047616,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0.5238095238095238,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Emergence of Ferromagnetism Through the Metal-Insulator Transition in Undoped Indium Tin Oxide Films|Samuel Mumford,Tiffany Paul,Aharon Kapitulnik###
(1242933, 1242933)
 We present a detailed study of the emergence of bulk ferromagnetism in lowcarrier density samples of undoped indium tin oxide (IT<missing VAR>O).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Emergence of Ferromagnetism Through the Metal-Insulator Transition in Undoped Indium Tin Oxide Films|Samuel Mumford,Tiffany Paul,Aharon Kapitulnik###
(1242935, 1242935)
 We present a detailed study of the emergence of bulk ferromagnetism in lowcarrier density samples of undoped indium tin oxide (IT<missing VAR>O).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Emergence of Ferromagnetism Through the Metal-Insulator Transition in Undoped Indium Tin Oxide Films|Samuel Mumford,Tiffany Paul,Aharon Kapitulnik###
(1243131, 1243131)
 Ferromagnetism wasobserved through the detection of magnetization hysteresis, anomalous Halleffect (AHE), and hysteretic magnetoresistance.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Emergence of Ferromagnetism Through the Metal-Insulator Transition in Undoped Indium Tin Oxide Films|Samuel Mumford,Tiffany Paul,Aharon Kapitulnik###
(1243154, 1243154)
 A sign change of the AHE<missing VAR> as theMIT is approached may elucidate the interplay between the impurity band and theconduction band in the weakly insulating side of the MIT.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nb3Sb
###Large Magnetoresistance and Nontrivial Berry Phase in Nb3Sb Crystals with A15 Structure|Qin Chen,Yuxing Zhou,Binjie Xu,Zhefeng Lou,Huancheng Chen,Shuijin Chen,Chunxiang Wu,Jianhua Du,Hangdong Wang,Jinhu Yang,Minghu Fang###
(1243236, 1243238)
Large Magnetoresistance and Nontrivial Berry Phase in Nb3Sb Crystals with A15 Structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 717, '%', 3],[150.0, 2, 'K', 3],[153.0, 9, 'T', 3]

Nb3Sb
###Large Magnetoresistance and Nontrivial Berry Phase in Nb3Sb Crystals with A15 Structure|Qin Chen,Yuxing Zhou,Binjie Xu,Zhefeng Lou,Huancheng Chen,Shuijin Chen,Chunxiang Wu,Jianhua Du,Hangdong Wang,Jinhu Yang,Minghu Fang###
(1243298, 1243300)
 We havesuccessfully grown Nb3Sb single crystals with a A15 structure andsystematically measured the longitudinal resistivity, Hall resistivity andquantum oscillations in magnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 717, '%', 1],[88.0, 2, 'K', 1],[91.0, 9, 'T', 1]

Nb3Sb
###Large Magnetoresistance and Nontrivial Berry Phase in Nb3Sb Crystals with A15 Structure|Qin Chen,Yuxing Zhou,Binjie Xu,Zhefeng Lou,Huancheng Chen,Shuijin Chen,Chunxiang Wu,Jianhua Du,Hangdong Wang,Jinhu Yang,Minghu Fang###
(1243361, 1243363)
 Similar to other topologicaltrivial/nontrivial semimetals, Nb3Sb, exhibits large magnetoresistance (MR)at low temperatures (717%, 2 K and 9 T), unsaturating quadratic fielddependence of MR and up-turn behavior in rhoxx(emphT) curves undermagnetic field, which is considered to result from a perfect hole-electroncompensation, as evidenced by the Hall resistivity measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 717, '%', 0],[25.0, 2, 'K', 0],[28.0, 9, 'T', 0]

Nb3Sb
###Large Magnetoresistance and Nontrivial Berry Phase in Nb3Sb Crystals with A15 Structure|Qin Chen,Yuxing Zhou,Binjie Xu,Zhefeng Lou,Huancheng Chen,Shuijin Chen,Chunxiang Wu,Jianhua Du,Hangdong Wang,Jinhu Yang,Minghu Fang###
(1243511, 1243513)
 The nonzeroBerry phase obtained from the de-Hass van Alphen (d<missing VAR>HvA) oscillationsdemonstrates that Nb3Sb is topologically nontrivial.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 717, '%', 1],[123.0, 2, 'K', 1],[120.0, 9, 'T', 1]

Nb3Sb
###Large Magnetoresistance and Nontrivial Berry Phase in Nb3Sb Crystals with A15 Structure|Qin Chen,Yuxing Zhou,Binjie Xu,Zhefeng Lou,Huancheng Chen,Shuijin Chen,Chunxiang Wu,Jianhua Du,Hangdong Wang,Jinhu Yang,Minghu Fang###
(1243531, 1243533)
 These results indicatethat Nb3Sb superconductor is also a semimetal with large MR and nontrivialBerry phase, indicating that Nb3Sb may be another platform to search forMajorana zero-energy mode.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 717, '%', 2],[143.0, 2, 'K', 2],[140.0, 9, 'T', 2]

Nb3Sb
###Large Magnetoresistance and Nontrivial Berry Phase in Nb3Sb Crystals with A15 Structure|Qin Chen,Yuxing Zhou,Binjie Xu,Zhefeng Lou,Huancheng Chen,Shuijin Chen,Chunxiang Wu,Jianhua Du,Hangdong Wang,Jinhu Yang,Minghu Fang###
(1243566, 1243568)
 These results indicatethat Nb3Sb superconductor is also a semimetal with large MR and nontrivialBerry phase, indicating that Nb3Sb may be another platform to search forMajorana zero-energy mode.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 717, '%', 2],[178.0, 2, 'K', 2],[175.0, 9, 'T', 2]

CoFeB
###Terahertz charge and spin transport in metallic ferromagnets: the role of crystalline and magnetic order|Kumar Neeraj,Apoorva Sharma,Maria Almeida,Patrick Matthes,Fabian Samad,Georgeta Salvan,Olav Hellwig,Stefano Bonetti###
(1243657, 1243659)
 We study the charge and spin dependent scattering in a set of CoFeB thinfilms whose crystalline order is systematically enhanced and controlled byannealing at increasingly higher temperatures.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CaIrO3
###Field-induced multiple metal-insulator crossovers of correlated Dirac electrons of perovskite CaIrO$_3$|R. Yamada,J. Fujioka,M. Kawamura,S. Sakai,M. Hirayama,R. Arita,T. Okawa,D. Hashizume,T. Sato,F. Kagawa,R. Kurihara,M. Tokunaga,Y. Tokura###
(1243970, 1243973)
Field-induced multiple metal-insulator crossovers of correlated Dirac electrons of perovskite CaIrO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[221.0, 3, ',', 3],[233.0, 1.4, 'K', 3]

CaIrO3
###Field-induced multiple metal-insulator crossovers of correlated Dirac electrons of perovskite CaIrO$_3$|R. Yamada,J. Fujioka,M. Kawamura,S. Sakai,M. Hirayama,R. Arita,T. Okawa,D. Hashizume,T. Sato,F. Kagawa,R. Kurihara,M. Tokunaga,Y. Tokura###
(1244139, 1244142)
 Here, wereport that the correlated Dirac electrons with the Mott criticality inperovskite CaIrO3 show unconventional field-induced successivemetal-insulator-metal crossovers in the quantum limit accompanying a giantmagnetoresistance (MR) with MR ratio of 3,500 % (18 T<missing VAR> and 1.4 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 3, ',', 0],[64.0, 1.4, 'K', 0]

Fe/MgO
###Crucial role of interfacial $s$-$d$ exchange interaction in the temperature dependence of tunnel magnetoresistance|Keisuke Masuda,Terumasa Tadano,Yoshio Miura###
(1244503, 1244506)
 By calculating the temperaturedependence of the TMR ratio in Fe/MgO/Fe(001), we show that the obtained TMRratio significantly decreases with increasing temperature owing to thespin-flip scattering in the Delta1 state induced by the s-d exchangeinteraction.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

In
###On dielectric screening in twisted double bilayer graphene|Fumiya Mukai,Kota Horii,Nazuna Hata,Ryoya Ebisuoka,Kenji Watanabe,Takashi Taniguchi,Ryuta Yagi###
(1244709, 1244709)
 In low temperature magnetotransportmeasurements, quantum oscillations of magnetoresistance originating from twobands with different carrier density were observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 5, 'degrees', 1]

B
###On dielectric screening in twisted double bilayer graphene|Fumiya Mukai,Kota Horii,Nazuna Hata,Ryoya Ebisuoka,Kenji Watanabe,Takashi Taniguchi,Ryuta Yagi###
(1244792, 1244792)
 The behavior of the carrierdensities with respect to the total carrier density were distinct from that ofthe AB-stacked tetralayer graphene.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 5, 'degrees', 2]

B
###On dielectric screening in twisted double bilayer graphene|Fumiya Mukai,Kota Horii,Nazuna Hata,Ryoya Ebisuoka,Kenji Watanabe,Takashi Taniguchi,Ryuta Yagi###
(1244874, 1244874)
 The estimated lambda wasslightly larger than that of AB-stacked graphene, which would possibly reflectthe difference in the inter-plane distribution of probability of the wavefunction.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[168.0, 5, 'degrees', 4]

In
###Giant Piezospintronic Effect in a Noncollinear Antiferromagnetic Metal|Huixin Guo,Zexin Feng,Han Yan,Jiuzhao Liu,Jia Zhang,Xiaorong Zhou,Peixin Qin,Jialin Cai,Zhongming Zeng,Xin Zhang,Xiaoning Wang,Hongyu Chen,Haojiang Wu,Chengbao Jiang,Zhiqi Liu###
(1245063, 1245063)
 In thiswork, we demonstrate the giant piezoelectric strain control of the spinstructure and the anomalous Hall resistance in a noncollinear antiferromagneticmetal - D<missing VAR>019 hexagonal Mn3Ga.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 200, 'nm', 1],[108.0, 10, '%', 1]

Mn3Ga
###Giant Piezospintronic Effect in a Noncollinear Antiferromagnetic Metal|Huixin Guo,Zexin Feng,Han Yan,Jiuzhao Liu,Jia Zhang,Xiaorong Zhou,Peixin Qin,Jialin Cai,Zhongming Zeng,Xin Zhang,Xiaoning Wang,Hongyu Chen,Haojiang Wu,Chengbao Jiang,Zhiqi Liu###
(1245122, 1245124)
 In thiswork, we demonstrate the giant piezoelectric strain control of the spinstructure and the anomalous Hall resistance in a noncollinear antiferromagneticmetal - D<missing VAR>019 hexagonal Mn3Ga.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 200, 'nm', 1],[47.0, 10, '%', 1]

In
###Electric-Field-Controlled Antiferromagnetic Spintronic Devices|Han Yan,Zexin Feng,Peixin Qin,Xiaorong Zhou,Huixin Guo,Xiaoning Wang,Hongyu Chen,Xin Zhang,Haojiang Wu,Chengbao Jiang,Zhiqi Liu###
(1245243, 1245243)
 In recent years, the field of antiferromagnetic spintronics has beensubstantially advanced.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Electric-Field-Controlled Antiferromagnetic Spintronic Devices|Han Yan,Zexin Feng,Peixin Qin,Xiaorong Zhou,Huixin Guo,Xiaoning Wang,Hongyu Chen,Xin Zhang,Haojiang Wu,Chengbao Jiang,Zhiqi Liu###
(1245308, 1245308)
 Inthis article, cutting-edge research, including electric-field modulation ofantiferromagnetic spintronic devices using strain, ionic liquids, dielectricmaterials, and electrochemical ionic migration, are comprehensively reviewed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Electric-Field-Controlled Antiferromagnetic Spintronic Devices|Han Yan,Zexin Feng,Peixin Qin,Xiaorong Zhou,Huixin Guo,Xiaoning Wang,Hongyu Chen,Xin Zhang,Haojiang Wu,Chengbao Jiang,Zhiqi Liu###
(1245447, 1245447)
 In conclusion, we envision thepossibility of realizing high-quality room-temperature antiferromagnetic tunneljunctions, antiferromagnetic spin logic devices, and artificialantiferromagnetic neurons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Three-dimensional chiral Veselago lensing|Serguei Tchoumakov,Jérôme Cayssol,Adolfo G. Grushin###
(1245862, 1245862)
 In particularwe show that the chiral Veselago lens leads to giant non-localmagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn6Sn6
###Anomalous Hall effect in ferrimagnetic metal RMn6Sn6 (R = Tb, Dy, Ho) with clean Mn kagome lattice|Lingling Gao,Shiwei Shen,Qi Wang,Wujun Shi,Yi Zhao,Changhua Li,Weizheng Cao,Cuiying Pei,Jun-Yi Ge,Gang Li,Jun Li,Yulin Chen,Shichao Yan,Yanpeng Qi###
(1245916, 1245919)
Anomalous Hall effect in ferrimagnetic metal R<missing VAR>Mn6Sn6 (R<missing VAR>  Tb, Dy, Ho) with clean Mn kagome lattice.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 7, 'T', 4],[231.0, -1, ',', 5],[241.0, -1, ',', 5]

Tb
###Anomalous Hall effect in ferrimagnetic metal RMn6Sn6 (R = Tb, Dy, Ho) with clean Mn kagome lattice|Lingling Gao,Shiwei Shen,Qi Wang,Wujun Shi,Yi Zhao,Changhua Li,Weizheng Cao,Cuiying Pei,Jun-Yi Ge,Gang Li,Jun Li,Yulin Chen,Shichao Yan,Yanpeng Qi###
(1245925, 1245925)
Anomalous Hall effect in ferrimagnetic metal R<missing VAR>Mn6Sn6 (R<missing VAR>  Tb, Dy, Ho) with clean Mn kagome lattice.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 7, 'T', 4],[225.0, -1, ',', 5],[235.0, -1, ',', 5]

Dy
###Anomalous Hall effect in ferrimagnetic metal RMn6Sn6 (R = Tb, Dy, Ho) with clean Mn kagome lattice|Lingling Gao,Shiwei Shen,Qi Wang,Wujun Shi,Yi Zhao,Changhua Li,Weizheng Cao,Cuiying Pei,Jun-Yi Ge,Gang Li,Jun Li,Yulin Chen,Shichao Yan,Yanpeng Qi###
(1245928, 1245928)
Anomalous Hall effect in ferrimagnetic metal R<missing VAR>Mn6Sn6 (R<missing VAR>  Tb, Dy, Ho) with clean Mn kagome lattice.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[170.0, 7, 'T', 4],[222.0, -1, ',', 5],[232.0, -1, ',', 5]

Ho
###Anomalous Hall effect in ferrimagnetic metal RMn6Sn6 (R = Tb, Dy, Ho) with clean Mn kagome lattice|Lingling Gao,Shiwei Shen,Qi Wang,Wujun Shi,Yi Zhao,Changhua Li,Weizheng Cao,Cuiying Pei,Jun-Yi Ge,Gang Li,Jun Li,Yulin Chen,Shichao Yan,Yanpeng Qi###
(1245931, 1245931)
Anomalous Hall effect in ferrimagnetic metal R<missing VAR>Mn6Sn6 (R<missing VAR>  Tb, Dy, Ho) with clean Mn kagome lattice.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 7, 'T', 4],[219.0, -1, ',', 5],[229.0, -1, ',', 5]

Mn
###Anomalous Hall effect in ferrimagnetic metal RMn6Sn6 (R = Tb, Dy, Ho) with clean Mn kagome lattice|Lingling Gao,Shiwei Shen,Qi Wang,Wujun Shi,Yi Zhao,Changhua Li,Weizheng Cao,Cuiying Pei,Jun-Yi Ge,Gang Li,Jun Li,Yulin Chen,Shichao Yan,Yanpeng Qi###
(1245938, 1245938)
Anomalous Hall effect in ferrimagnetic metal R<missing VAR>Mn6Sn6 (R<missing VAR>  Tb, Dy, Ho) with clean Mn kagome lattice.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 7, 'T', 4],[212.0, -1, ',', 5],[222.0, -1, ',', 5]

Mn6Sn6
###Anomalous Hall effect in ferrimagnetic metal RMn6Sn6 (R = Tb, Dy, Ho) with clean Mn kagome lattice|Lingling Gao,Shiwei Shen,Qi Wang,Wujun Shi,Yi Zhao,Changhua Li,Weizheng Cao,Cuiying Pei,Jun-Yi Ge,Gang Li,Jun Li,Yulin Chen,Shichao Yan,Yanpeng Qi###
(1246005, 1246008)
 Here we systematicallystudied the magnetic and transport properties of R<missing VAR>Mn6Sn6 (R<missing VAR>  Tb, Dy, Ho) withclean Mn kagome lattice.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 7, 'T', 2],[142.0, -1, ',', 3],[152.0, -1, ',', 3]

Tb
###Anomalous Hall effect in ferrimagnetic metal RMn6Sn6 (R = Tb, Dy, Ho) with clean Mn kagome lattice|Lingling Gao,Shiwei Shen,Qi Wang,Wujun Shi,Yi Zhao,Changhua Li,Weizheng Cao,Cuiying Pei,Jun-Yi Ge,Gang Li,Jun Li,Yulin Chen,Shichao Yan,Yanpeng Qi###
(1246014, 1246014)
 Here we systematicallystudied the magnetic and transport properties of R<missing VAR>Mn6Sn6 (R<missing VAR>  Tb, Dy, Ho) withclean Mn kagome lattice.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 7, 'T', 2],[136.0, -1, ',', 3],[146.0, -1, ',', 3]

Dy
###Anomalous Hall effect in ferrimagnetic metal RMn6Sn6 (R = Tb, Dy, Ho) with clean Mn kagome lattice|Lingling Gao,Shiwei Shen,Qi Wang,Wujun Shi,Yi Zhao,Changhua Li,Weizheng Cao,Cuiying Pei,Jun-Yi Ge,Gang Li,Jun Li,Yulin Chen,Shichao Yan,Yanpeng Qi###
(1246017, 1246017)
 Here we systematicallystudied the magnetic and transport properties of R<missing VAR>Mn6Sn6 (R<missing VAR>  Tb, Dy, Ho) withclean Mn kagome lattice.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 7, 'T', 2],[133.0, -1, ',', 3],[143.0, -1, ',', 3]

Ho
###Anomalous Hall effect in ferrimagnetic metal RMn6Sn6 (R = Tb, Dy, Ho) with clean Mn kagome lattice|Lingling Gao,Shiwei Shen,Qi Wang,Wujun Shi,Yi Zhao,Changhua Li,Weizheng Cao,Cuiying Pei,Jun-Yi Ge,Gang Li,Jun Li,Yulin Chen,Shichao Yan,Yanpeng Qi###
(1246020, 1246020)
 Here we systematicallystudied the magnetic and transport properties of R<missing VAR>Mn6Sn6 (R<missing VAR>  Tb, Dy, Ho) withclean Mn kagome lattice.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 7, 'T', 2],[130.0, -1, ',', 3],[140.0, -1, ',', 3]

Mn
###Anomalous Hall effect in ferrimagnetic metal RMn6Sn6 (R = Tb, Dy, Ho) with clean Mn kagome lattice|Lingling Gao,Shiwei Shen,Qi Wang,Wujun Shi,Yi Zhao,Changhua Li,Weizheng Cao,Cuiying Pei,Jun-Yi Ge,Gang Li,Jun Li,Yulin Chen,Shichao Yan,Yanpeng Qi###
(1246028, 1246028)
 Here we systematicallystudied the magnetic and transport properties of R<missing VAR>Mn6Sn6 (R<missing VAR>  Tb, Dy, Ho) withclean Mn kagome lattice.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 7, 'T', 2],[122.0, -1, ',', 3],[132.0, -1, ',', 3]

TbMn6Sn6
###Anomalous Hall effect in ferrimagnetic metal RMn6Sn6 (R = Tb, Dy, Ho) with clean Mn kagome lattice|Lingling Gao,Shiwei Shen,Qi Wang,Wujun Shi,Yi Zhao,Changhua Li,Weizheng Cao,Cuiying Pei,Jun-Yi Ge,Gang Li,Jun Li,Yulin Chen,Shichao Yan,Yanpeng Qi###
(1246179, 1246183)
 A large intrinsic anomalous Hall conductivity about 250Omega-1cm-1, 40 Omega-1cm-1, 95 Omega-1cm-1 is observed for TbMn6Sn6,DyMn6Sn6, HoMn6Sn6, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.46153846153846156,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.46153846153846156,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 7, 'T', 1],[29.0, -1, ',', 0],[19.0, -1, ',', 0]

DyMn6Sn6
###Anomalous Hall effect in ferrimagnetic metal RMn6Sn6 (R = Tb, Dy, Ho) with clean Mn kagome lattice|Lingling Gao,Shiwei Shen,Qi Wang,Wujun Shi,Yi Zhao,Changhua Li,Weizheng Cao,Cuiying Pei,Jun-Yi Ge,Gang Li,Jun Li,Yulin Chen,Shichao Yan,Yanpeng Qi###
(1246187, 1246191)
 A large intrinsic anomalous Hall conductivity about 250Omega-1cm-1, 40 Omega-1cm-1, 95 Omega-1cm-1 is observed for TbMn6Sn6,DyMn6Sn6, HoMn6Sn6, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.46153846153846156,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.46153846153846156,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 7, 'T', 1],[37.0, -1, ',', 0],[27.0, -1, ',', 0]

HoMn6Sn6
###Anomalous Hall effect in ferrimagnetic metal RMn6Sn6 (R = Tb, Dy, Ho) with clean Mn kagome lattice|Lingling Gao,Shiwei Shen,Qi Wang,Wujun Shi,Yi Zhao,Changhua Li,Weizheng Cao,Cuiying Pei,Jun-Yi Ge,Gang Li,Jun Li,Yulin Chen,Shichao Yan,Yanpeng Qi###
(1246194, 1246198)
 A large intrinsic anomalous Hall conductivity about 250Omega-1cm-1, 40 Omega-1cm-1, 95 Omega-1cm-1 is observed for TbMn6Sn6,DyMn6Sn6, HoMn6Sn6, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.46153846153846156,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.46153846153846156,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 7, 'T', 1],[44.0, -1, ',', 0],[34.0, -1, ',', 0]

Mn6Sn6
###Anomalous Hall effect in ferrimagnetic metal RMn6Sn6 (R = Tb, Dy, Ho) with clean Mn kagome lattice|Lingling Gao,Shiwei Shen,Qi Wang,Wujun Shi,Yi Zhao,Changhua Li,Weizheng Cao,Cuiying Pei,Jun-Yi Ge,Gang Li,Jun Li,Yulin Chen,Shichao Yan,Yanpeng Qi###
(1246213, 1246216)
 Our results imply that R<missing VAR>Mn6Sn6 system is anexcellent platform to discover other intimately related topological or quantumphenomena and also tune the electronic and magnetic properties in futurestudies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 7, 'T', 2],[63.0, -1, ',', 1],[53.0, -1, ',', 1]

EuSn2As2
###Unusual Magnetic Properties in Layered Magnetic Topological Insulator EuSn2As2|Huijie Li,Wenshuai Gao,Zheng Chen,Weiwei Chu,Yong Nie,Shuaiqi Ma,Yuyan Han,Min Wu,Tian Li,Qun Niu,Wei Ning,Xiangde Zhu,Mingliang Tian###
(1246296, 1246300)
Unusual Magnetic Properties in Layered Magnetic Topological Insulator EuSn2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 21, 'K', 3],[172.0, 2, 'K', 4]

EuSn2As2
###Unusual Magnetic Properties in Layered Magnetic Topological Insulator EuSn2As2|Huijie Li,Wenshuai Gao,Zheng Chen,Weiwei Chu,Yong Nie,Shuaiqi Ma,Yuyan Han,Min Wu,Tian Li,Qun Niu,Wei Ning,Xiangde Zhu,Mingliang Tian###
(1246303, 1246307)
 EuSn2As2 with layered rhombohedral crystal structure is proposed to be acandidate of intrinsic antiferromagnetic (AFM) topological insulator.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 21, 'K', 2],[165.0, 2, 'K', 3]

F
###Unusual Magnetic Properties in Layered Magnetic Topological Insulator EuSn2As2|Huijie Li,Wenshuai Gao,Zheng Chen,Weiwei Chu,Yong Nie,Shuaiqi Ma,Yuyan Han,Min Wu,Tian Li,Qun Niu,Wei Ning,Xiangde Zhu,Mingliang Tian###
(1246340, 1246340)
 EuSn2As2 with layered rhombohedral crystal structure is proposed to be acandidate of intrinsic antiferromagnetic (AFM) topological insulator.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 21, 'K', 2],[132.0, 2, 'K', 3]

EuSn2As2
###Unusual Magnetic Properties in Layered Magnetic Topological Insulator EuSn2As2|Huijie Li,Wenshuai Gao,Zheng Chen,Weiwei Chu,Yong Nie,Shuaiqi Ma,Yuyan Han,Min Wu,Tian Li,Qun Niu,Wei Ning,Xiangde Zhu,Mingliang Tian###
(1246383, 1246387)
 Here, wehave investigated systematic magnetoresistance (MR) and magnetizationmeasurements on the high quality EuSn2As2 single crystal with the magneticfield both parallel and perpendicular to (00l) plane.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 21, 'K', 1],[85.0, 2, 'K', 2]

EuSn2
###Unusual Magnetic Properties in Layered Magnetic Topological Insulator EuSn2As2|Huijie Li,Wenshuai Gao,Zheng Chen,Weiwei Chu,Yong Nie,Shuaiqi Ma,Yuyan Han,Min Wu,Tian Li,Qun Niu,Wei Ning,Xiangde Zhu,Mingliang Tian###
(1246443, 1246445)
 Both the kink of magneticsusceptibility and longitudinal resistivity reveal that EuSn2An2 undergoes anAFM<missing VAR> transition at T<missing VAR>N  21 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 21, 'K', 0],[27.0, 2, 'K', 1]

F
###Unusual Magnetic Properties in Layered Magnetic Topological Insulator EuSn2As2|Huijie Li,Wenshuai Gao,Zheng Chen,Weiwei Chu,Yong Nie,Shuaiqi Ma,Yuyan Han,Min Wu,Tian Li,Qun Niu,Wei Ning,Xiangde Zhu,Mingliang Tian###
(1246455, 1246455)
 Both the kink of magneticsusceptibility and longitudinal resistivity reveal that EuSn2An2 undergoes anAFM<missing VAR> transition at T<missing VAR>N  21 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 21, 'K', 0],[17.0, 2, 'K', 1]

N
###Unusual Magnetic Properties in Layered Magnetic Topological Insulator EuSn2As2|Huijie Li,Wenshuai Gao,Zheng Chen,Weiwei Chu,Yong Nie,Shuaiqi Ma,Yuyan Han,Min Wu,Tian Li,Qun Niu,Wei Ning,Xiangde Zhu,Mingliang Tian###
(1246463, 1246463)
 Both the kink of magneticsusceptibility and longitudinal resistivity reveal that EuSn2An2 undergoes anAFM<missing VAR> transition at T<missing VAR>N  21 K.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 21, 'K', 0],[9.0, 2, 'K', 1]

At
###Unusual Magnetic Properties in Layered Magnetic Topological Insulator EuSn2As2|Huijie Li,Wenshuai Gao,Zheng Chen,Weiwei Chu,Yong Nie,Shuaiqi Ma,Yuyan Han,Min Wu,Tian Li,Qun Niu,Wei Ning,Xiangde Zhu,Mingliang Tian###
(1246468, 1246468)
 At T<missing VAR>  2 K, the magnetization exhibits twosuccessive plateaus of  5.6 muB/Eu and  6.6 muB/Eu at the correspondingcritical magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 21, 'K', 1],[4.0, 2, 'K', 0]

B/Eu
###Unusual Magnetic Properties in Layered Magnetic Topological Insulator EuSn2As2|Huijie Li,Wenshuai Gao,Zheng Chen,Weiwei Chu,Yong Nie,Shuaiqi Ma,Yuyan Han,Min Wu,Tian Li,Qun Niu,Wei Ning,Xiangde Zhu,Mingliang Tian###
(1246494, 1246496)
 At T<missing VAR>  2 K, the magnetization exhibits twosuccessive plateaus of  5.6 muB/Eu and  6.6 muB/Eu at the correspondingcritical magnetic fields.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[29.0, 21, 'K', 1],[22.0, 2, 'K', 0]

B/Eu
###Unusual Magnetic Properties in Layered Magnetic Topological Insulator EuSn2As2|Huijie Li,Wenshuai Gao,Zheng Chen,Weiwei Chu,Yong Nie,Shuaiqi Ma,Yuyan Han,Min Wu,Tian Li,Qun Niu,Wei Ning,Xiangde Zhu,Mingliang Tian###
(1246504, 1246506)
 At T<missing VAR>  2 K, the magnetization exhibits twosuccessive plateaus of  5.6 muB/Eu and  6.6 muB/Eu at the correspondingcritical magnetic fields.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[39.0, 21, 'K', 1],[32.0, 2, 'K', 0]

EuSn2
###Unusual Magnetic Properties in Layered Magnetic Topological Insulator EuSn2As2|Huijie Li,Wenshuai Gao,Zheng Chen,Weiwei Chu,Yong Nie,Shuaiqi Ma,Yuyan Han,Min Wu,Tian Li,Qun Niu,Wei Ning,Xiangde Zhu,Mingliang Tian###
(1246551, 1246553)
 Combined with the negative longitudinal MR andabnormal Hall resistance, we demonstrate that EuSn2An2 undergoes complicatedmagnetic transitions from an AFM<missing VAR> state to a canted ferromagnetic (FM) state atHc and then to a polarized FM<missing VAR> state at Hs as the magnetic field increase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 21, 'K', 2],[79.0, 2, 'K', 1]

F
###Unusual Magnetic Properties in Layered Magnetic Topological Insulator EuSn2As2|Huijie Li,Wenshuai Gao,Zheng Chen,Weiwei Chu,Yong Nie,Shuaiqi Ma,Yuyan Han,Min Wu,Tian Li,Qun Niu,Wei Ning,Xiangde Zhu,Mingliang Tian###
(1246571, 1246571)
 Combined with the negative longitudinal MR andabnormal Hall resistance, we demonstrate that EuSn2An2 undergoes complicatedmagnetic transitions from an AFM<missing VAR> state to a canted ferromagnetic (FM) state atHc and then to a polarized FM<missing VAR> state at Hs as the magnetic field increase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 21, 'K', 2],[99.0, 2, 'K', 1]

F
###Unusual Magnetic Properties in Layered Magnetic Topological Insulator EuSn2As2|Huijie Li,Wenshuai Gao,Zheng Chen,Weiwei Chu,Yong Nie,Shuaiqi Ma,Yuyan Han,Min Wu,Tian Li,Qun Niu,Wei Ning,Xiangde Zhu,Mingliang Tian###
(1246585, 1246585)
 Combined with the negative longitudinal MR andabnormal Hall resistance, we demonstrate that EuSn2An2 undergoes complicatedmagnetic transitions from an AFM<missing VAR> state to a canted ferromagnetic (FM) state atHc and then to a polarized FM<missing VAR> state at Hs as the magnetic field increase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 21, 'K', 2],[113.0, 2, 'K', 1]

F
###Unusual Magnetic Properties in Layered Magnetic Topological Insulator EuSn2As2|Huijie Li,Wenshuai Gao,Zheng Chen,Weiwei Chu,Yong Nie,Shuaiqi Ma,Yuyan Han,Min Wu,Tian Li,Qun Niu,Wei Ning,Xiangde Zhu,Mingliang Tian###
(1246606, 1246606)
 Combined with the negative longitudinal MR andabnormal Hall resistance, we demonstrate that EuSn2An2 undergoes complicatedmagnetic transitions from an AFM<missing VAR> state to a canted ferromagnetic (FM) state atHc and then to a polarized FM<missing VAR> state at Hs as the magnetic field increase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 21, 'K', 2],[134.0, 2, 'K', 1]

Hs
###Unusual Magnetic Properties in Layered Magnetic Topological Insulator EuSn2As2|Huijie Li,Wenshuai Gao,Zheng Chen,Weiwei Chu,Yong Nie,Shuaiqi Ma,Yuyan Han,Min Wu,Tian Li,Qun Niu,Wei Ning,Xiangde Zhu,Mingliang Tian###
(1246613, 1246613)
 Combined with the negative longitudinal MR andabnormal Hall resistance, we demonstrate that EuSn2An2 undergoes complicatedmagnetic transitions from an AFM<missing VAR> state to a canted ferromagnetic (FM) state atHc and then to a polarized FM<missing VAR> state at Hs as the magnetic field increase.
EXCEPTION 3: IndexError for Hs
[148.0, 21, 'K', 2],[141.0, 2, 'K', 1]

In
###Anisotropic MagnetoMemristance|Francesco Caravelli,Ezio Iacocca,Gia-Wei Chern,Cristiano Nisoli,Clodoaldo I. L. de Araujo###
(1246640, 1246640)
 In the last decade, nanoscale resistive devices with memory have been thesubject of intense study because of their possible use in brain-inspiredcomputing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Li
###Anisotropic MagnetoMemristance|Francesco Caravelli,Ezio Iacocca,Gia-Wei Chern,Cristiano Nisoli,Clodoaldo I. L. de Araujo###
(1246831, 1246831)
We show analytically and numerically that a single ferromagnetic layer canpossess G<missing VAR>Hz memristance, due to a combination of two factors a current-inducedtransfer of angular momentum (Zhang-Li torque) and the anisotropicmagnetoresistance (AMR).
Featurization terminated normally.
0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Eu
###Roller-Coaster in a Flatland: Magnetoresistivity in Eu-intercalated Graphite|A. L. Chernyshev,O. A. Starykh###
(1247013, 1247013)
Roller-Coaster in a Flatland Magnetoresistivity in Eu-intercalated Graphite.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 1980, 's', 4],[261.0, 2, 'D', 7]

S
###Roller-Coaster in a Flatland: Magnetoresistivity in Eu-intercalated Graphite|A. L. Chernyshev,O. A. Starykh###
(1247058, 1247058)
S.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 1980, 's', 2],[216.0, 2, 'D', 5]

EuC6
###Roller-Coaster in a Flatland: Magnetoresistivity in Eu-intercalated Graphite|A. L. Chernyshev,O. A. Starykh###
(1247120, 1247122)
 Among the most enigmatic findings of that era was adramatic, roller-coaster-like behavior of the magnetoresistivity in EuC6compound, in which magnetic Eu2 ions form a triangular lattice that iscommensurate to graphite honeycomb planes.
Featurization terminated normally.
0,0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 1980, 's', 1],[152.0, 2, 'D', 2]

Eu2
###Roller-Coaster in a Flatland: Magnetoresistivity in Eu-intercalated Graphite|A. L. Chernyshev,O. A. Starykh###
(1247134, 1247135)
 Among the most enigmatic findings of that era was adramatic, roller-coaster-like behavior of the magnetoresistivity in EuC6compound, in which magnetic Eu2 ions form a triangular lattice that iscommensurate to graphite honeycomb planes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 1980, 's', 1],[139.0, 2, 'D', 2]

In
###Roller-Coaster in a Flatland: Magnetoresistivity in Eu-intercalated Graphite|A. L. Chernyshev,O. A. Starykh###
(1247163, 1247163)
 In this study, we provide along-awaited it microscopic explanation of this behavior, demonstrating thatthe resistivity of EuC6 is dominated by spin excitations in Eu-planes andtheir highly nontrivial evolution with the magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 1980, 's', 2],[111.0, 2, 'D', 1]

EuC6
###Roller-Coaster in a Flatland: Magnetoresistivity in Eu-intercalated Graphite|A. L. Chernyshev,O. A. Starykh###
(1247205, 1247207)
 In this study, we provide along-awaited it microscopic explanation of this behavior, demonstrating thatthe resistivity of EuC6 is dominated by spin excitations in Eu-planes andtheir highly nontrivial evolution with the magnetic field.
Featurization terminated normally.
0,0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 1980, 's', 2],[67.0, 2, 'D', 1]

Eu
###Roller-Coaster in a Flatland: Magnetoresistivity in Eu-intercalated Graphite|A. L. Chernyshev,O. A. Starykh###
(1247221, 1247221)
 In this study, we provide along-awaited it microscopic explanation of this behavior, demonstrating thatthe resistivity of EuC6 is dominated by spin excitations in Eu-planes andtheir highly nontrivial evolution with the magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 1980, 's', 2],[53.0, 2, 'D', 1]

BaPt4Se6
###Transport anomalies in the layered compound BaPt4Se6|Sheng Li,Yichen Zhang,Hanlin Wu,Huifei Zhai,Wenhao Liu,Daniel Peirano Petit,Ji Seop Oh,Jonathan Denlinger,Gregory T. McCandless,Julia Y. Chan,Robert J. Birgeneau,Gang Li,Ming Yi,Bing Lv###
(1247329, 1247333)
Transport anomalies in the layered compound BaPt4Se6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5454545454545454,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.09090909090909091,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.36363636363636365,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[222.0, 10, 'K', 4],[288.0, 5, 'K', 6],[336.0, 200, 'K', 7]

BaPt4Se6
###Transport anomalies in the layered compound BaPt4Se6|Sheng Li,Yichen Zhang,Hanlin Wu,Huifei Zhai,Wenhao Liu,Daniel Peirano Petit,Ji Seop Oh,Jonathan Denlinger,Gregory T. McCandless,Julia Y. Chan,Robert J. Birgeneau,Gang Li,Ming Yi,Bing Lv###
(1247348, 1247352)
 We report a layered ternary selenide BaPt4Se6 featuring sesqui-selenidePt2Se3 layers sandwiched by Ba atoms.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5454545454545454,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.09090909090909091,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.36363636363636365,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[203.0, 10, 'K', 3],[269.0, 5, 'K', 5],[317.0, 200, 'K', 6]

Pt2Se3
###Transport anomalies in the layered compound BaPt4Se6|Sheng Li,Yichen Zhang,Hanlin Wu,Huifei Zhai,Wenhao Liu,Daniel Peirano Petit,Ji Seop Oh,Jonathan Denlinger,Gregory T. McCandless,Julia Y. Chan,Robert J. Birgeneau,Gang Li,Ming Yi,Bing Lv###
(1247361, 1247364)
 We report a layered ternary selenide BaPt4Se6 featuring sesqui-selenidePt2Se3 layers sandwiched by Ba atoms.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[191.0, 10, 'K', 3],[257.0, 5, 'K', 5],[305.0, 200, 'K', 6]

Ba
###Transport anomalies in the layered compound BaPt4Se6|Sheng Li,Yichen Zhang,Hanlin Wu,Huifei Zhai,Wenhao Liu,Daniel Peirano Petit,Ji Seop Oh,Jonathan Denlinger,Gregory T. McCandless,Julia Y. Chan,Robert J. Birgeneau,Gang Li,Ming Yi,Bing Lv###
(1247372, 1247372)
 We report a layered ternary selenide BaPt4Se6 featuring sesqui-selenidePt2Se3 layers sandwiched by Ba atoms.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[183.0, 10, 'K', 3],[249.0, 5, 'K', 5],[297.0, 200, 'K', 6]

Pt2Se3
###Transport anomalies in the layered compound BaPt4Se6|Sheng Li,Yichen Zhang,Hanlin Wu,Huifei Zhai,Wenhao Liu,Daniel Peirano Petit,Ji Seop Oh,Jonathan Denlinger,Gregory T. McCandless,Julia Y. Chan,Robert J. Birgeneau,Gang Li,Ming Yi,Bing Lv###
(1247379, 1247382)
 The Pt2Se3 layers in this compound can bederived from the Dirac-semimetal PtSe2 phase with Se vacancies that form ahoneycomb structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 10, 'K', 2],[239.0, 5, 'K', 4],[287.0, 200, 'K', 5]

PtSe2
###Transport anomalies in the layered compound BaPt4Se6|Sheng Li,Yichen Zhang,Hanlin Wu,Huifei Zhai,Wenhao Liu,Daniel Peirano Petit,Ji Seop Oh,Jonathan Denlinger,Gregory T. McCandless,Julia Y. Chan,Robert J. Birgeneau,Gang Li,Ming Yi,Bing Lv###
(1247407, 1247409)
 The Pt2Se3 layers in this compound can bederived from the Dirac-semimetal PtSe2 phase with Se vacancies that form ahoneycomb structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 10, 'K', 2],[212.0, 5, 'K', 4],[260.0, 200, 'K', 5]

Se
###Transport anomalies in the layered compound BaPt4Se6|Sheng Li,Yichen Zhang,Hanlin Wu,Huifei Zhai,Wenhao Liu,Daniel Peirano Petit,Ji Seop Oh,Jonathan Denlinger,Gregory T. McCandless,Julia Y. Chan,Robert J. Birgeneau,Gang Li,Ming Yi,Bing Lv###
(1247415, 1247415)
 The Pt2Se3 layers in this compound can bederived from the Dirac-semimetal PtSe2 phase with Se vacancies that form ahoneycomb structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 10, 'K', 2],[206.0, 5, 'K', 4],[254.0, 200, 'K', 5]

Pt
###Transport anomalies in the layered compound BaPt4Se6|Sheng Li,Yichen Zhang,Hanlin Wu,Huifei Zhai,Wenhao Liu,Daniel Peirano Petit,Ji Seop Oh,Jonathan Denlinger,Gregory T. McCandless,Julia Y. Chan,Robert J. Birgeneau,Gang Li,Ming Yi,Bing Lv###
(1247441, 1247441)
 This structure results in a Pt (VI) and Pt (II)mixed-valence compound with both PtSe6 octahedra and PtSe4 square netcoordination configurations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 10, 'K', 1],[180.0, 5, 'K', 3],[228.0, 200, 'K', 4]

(VI)
###Transport anomalies in the layered compound BaPt4Se6|Sheng Li,Yichen Zhang,Hanlin Wu,Huifei Zhai,Wenhao Liu,Daniel Peirano Petit,Ji Seop Oh,Jonathan Denlinger,Gregory T. McCandless,Julia Y. Chan,Robert J. Birgeneau,Gang Li,Ming Yi,Bing Lv###
(1247443, 1247446)
 This structure results in a Pt (VI) and Pt (II)mixed-valence compound with both PtSe6 octahedra and PtSe4 square netcoordination configurations.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 10, 'K', 1],[175.0, 5, 'K', 3],[223.0, 200, 'K', 4]

Pt
###Transport anomalies in the layered compound BaPt4Se6|Sheng Li,Yichen Zhang,Hanlin Wu,Huifei Zhai,Wenhao Liu,Daniel Peirano Petit,Ji Seop Oh,Jonathan Denlinger,Gregory T. McCandless,Julia Y. Chan,Robert J. Birgeneau,Gang Li,Ming Yi,Bing Lv###
(1247450, 1247450)
 This structure results in a Pt (VI) and Pt (II)mixed-valence compound with both PtSe6 octahedra and PtSe4 square netcoordination configurations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 10, 'K', 1],[171.0, 5, 'K', 3],[219.0, 200, 'K', 4]

(II)
###Transport anomalies in the layered compound BaPt4Se6|Sheng Li,Yichen Zhang,Hanlin Wu,Huifei Zhai,Wenhao Liu,Daniel Peirano Petit,Ji Seop Oh,Jonathan Denlinger,Gregory T. McCandless,Julia Y. Chan,Robert J. Birgeneau,Gang Li,Ming Yi,Bing Lv###
(1247452, 1247455)
 This structure results in a Pt (VI) and Pt (II)mixed-valence compound with both PtSe6 octahedra and PtSe4 square netcoordination configurations.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 10, 'K', 1],[166.0, 5, 'K', 3],[214.0, 200, 'K', 4]

PtSe6
###Transport anomalies in the layered compound BaPt4Se6|Sheng Li,Yichen Zhang,Hanlin Wu,Huifei Zhai,Wenhao Liu,Daniel Peirano Petit,Ji Seop Oh,Jonathan Denlinger,Gregory T. McCandless,Julia Y. Chan,Robert J. Birgeneau,Gang Li,Ming Yi,Bing Lv###
(1247468, 1247470)
 This structure results in a Pt (VI) and Pt (II)mixed-valence compound with both PtSe6 octahedra and PtSe4 square netcoordination configurations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 10, 'K', 1],[151.0, 5, 'K', 3],[199.0, 200, 'K', 4]

PtSe4
###Transport anomalies in the layered compound BaPt4Se6|Sheng Li,Yichen Zhang,Hanlin Wu,Huifei Zhai,Wenhao Liu,Daniel Peirano Petit,Ji Seop Oh,Jonathan Denlinger,Gregory T. McCandless,Julia Y. Chan,Robert J. Birgeneau,Gang Li,Ming Yi,Bing Lv###
(1247476, 1247478)
 This structure results in a Pt (VI) and Pt (II)mixed-valence compound with both PtSe6 octahedra and PtSe4 square netcoordination configurations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 10, 'K', 1],[143.0, 5, 'K', 3],[191.0, 200, 'K', 4]

I
###Transport anomalies in the layered compound BaPt4Se6|Sheng Li,Yichen Zhang,Hanlin Wu,Huifei Zhai,Wenhao Liu,Daniel Peirano Petit,Ji Seop Oh,Jonathan Denlinger,Gregory T. McCandless,Julia Y. Chan,Robert J. Birgeneau,Gang Li,Ming Yi,Bing Lv###
(1247530, 1247530)
 Temperature dependent electrical transportmeasurements suggest two distinct anomalies a resistivity crossover, mimic tothe metal-insulator (M<missing VAR>-I) transition at 150K, and a resistivity plateau attemperatures below 10K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 10, 'K', 0],[91.0, 5, 'K', 2],[139.0, 200, 'K', 3]

K
###Transport anomalies in the layered compound BaPt4Se6|Sheng Li,Yichen Zhang,Hanlin Wu,Huifei Zhai,Wenhao Liu,Daniel Peirano Petit,Ji Seop Oh,Jonathan Denlinger,Gregory T. McCandless,Julia Y. Chan,Robert J. Birgeneau,Gang Li,Ming Yi,Bing Lv###
(1247538, 1247538)
 Temperature dependent electrical transportmeasurements suggest two distinct anomalies a resistivity crossover, mimic tothe metal-insulator (M<missing VAR>-I) transition at 150K, and a resistivity plateau attemperatures below 10K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 10, 'K', 0],[83.0, 5, 'K', 2],[131.0, 200, 'K', 3]

CsV3Sb5
###Magneto-Seebeck effect and ambipolar Nernst effect in CsV$_3$Sb$_5$ superconductor|Yuhan Gan,Wei Xia,Long Zhang,Kunya Yang,Xinrun Mi,Aifeng Wang,Yisheng Chai,Yanfeng Guo,Xiaoyuan Zhou,Mingquan He###
(1247696, 1247700)
Magneto-Seebeck effect and ambipolar Nernst effect in CsV3Sb5 superconductor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5555555555555556,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CsV3Sb5
###Magneto-Seebeck effect and ambipolar Nernst effect in CsV$_3$Sb$_5$ superconductor|Yuhan Gan,Wei Xia,Long Zhang,Kunya Yang,Xinrun Mi,Aifeng Wang,Yisheng Chai,Yanfeng Guo,Xiaoyuan Zhou,Mingquan He###
(1247747, 1247751)
 We present a study of Seebeck and Nernst effect in combination withmagnetoresistance and Hall measurements of the Kagome superconductorCsV3Sb5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5555555555555556,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Magneto-Seebeck effect and ambipolar Nernst effect in CsV$_3$Sb$_5$ superconductor|Yuhan Gan,Wei Xia,Long Zhang,Kunya Yang,Xinrun Mi,Aifeng Wang,Yisheng Chai,Yanfeng Guo,Xiaoyuan Zhou,Mingquan He###
(1247776, 1247776)
 Sizable magneto-Seebeck signal appears once the charge densitywave (CD<missing VAR>W) order sets in below TCDW94 K.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Magneto-Seebeck effect and ambipolar Nernst effect in CsV$_3$Sb$_5$ superconductor|Yuhan Gan,Wei Xia,Long Zhang,Kunya Yang,Xinrun Mi,Aifeng Wang,Yisheng Chai,Yanfeng Guo,Xiaoyuan Zhou,Mingquan He###
(1247778, 1247778)
 Sizable magneto-Seebeck signal appears once the charge densitywave (CD<missing VAR>W) order sets in below TCDW94 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W94
###Magneto-Seebeck effect and ambipolar Nernst effect in CsV$_3$Sb$_5$ superconductor|Yuhan Gan,Wei Xia,Long Zhang,Kunya Yang,Xinrun Mi,Aifeng Wang,Yisheng Chai,Yanfeng Guo,Xiaoyuan Zhou,Mingquan He###
(1247792, 1247793)
 Sizable magneto-Seebeck signal appears once the charge densitywave (CD<missing VAR>W) order sets in below TCDW94 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Magneto-Seebeck effect and ambipolar Nernst effect in CsV$_3$Sb$_5$ superconductor|Yuhan Gan,Wei Xia,Long Zhang,Kunya Yang,Xinrun Mi,Aifeng Wang,Yisheng Chai,Yanfeng Guo,Xiaoyuan Zhou,Mingquan He###
(1247795, 1247795)
 Sizable magneto-Seebeck signal appears once the charge densitywave (CD<missing VAR>W) order sets in below TCDW94 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Magneto-Seebeck effect and ambipolar Nernst effect in CsV$_3$Sb$_5$ superconductor|Yuhan Gan,Wei Xia,Long Zhang,Kunya Yang,Xinrun Mi,Aifeng Wang,Yisheng Chai,Yanfeng Guo,Xiaoyuan Zhou,Mingquan He###
(1247818, 1247818)
 The Nernst signal peaks at alower temperature T<missing VAR>35 K, crossing which the Hall coefficient switchessign, which we attribute to the ambipolar transport of compensated bands due tothe multi-band nature of CsV3Sb5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CsV3Sb5
###Magneto-Seebeck effect and ambipolar Nernst effect in CsV$_3$Sb$_5$ superconductor|Yuhan Gan,Wei Xia,Long Zhang,Kunya Yang,Xinrun Mi,Aifeng Wang,Yisheng Chai,Yanfeng Guo,Xiaoyuan Zhou,Mingquan He###
(1247872, 1247876)
 The Nernst signal peaks at alower temperature T<missing VAR>35 K, crossing which the Hall coefficient switchessign, which we attribute to the ambipolar transport of compensated bands due tothe multi-band nature of CsV3Sb5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5555555555555556,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Magneto-Seebeck effect and ambipolar Nernst effect in CsV$_3$Sb$_5$ superconductor|Yuhan Gan,Wei Xia,Long Zhang,Kunya Yang,Xinrun Mi,Aifeng Wang,Yisheng Chai,Yanfeng Guo,Xiaoyuan Zhou,Mingquan He###
(1247913, 1247913)
 Sublinear Nernst signal as a functionof magnetic field, together with large anomalous Nernst effect (ANE) alsoemerge inside the CD<missing VAR>W phase, despite the absence of long-range magnetic order.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Magneto-Seebeck effect and ambipolar Nernst effect in CsV$_3$Sb$_5$ superconductor|Yuhan Gan,Wei Xia,Long Zhang,Kunya Yang,Xinrun Mi,Aifeng Wang,Yisheng Chai,Yanfeng Guo,Xiaoyuan Zhou,Mingquan He###
(1247926, 1247926)
 Sublinear Nernst signal as a functionof magnetic field, together with large anomalous Nernst effect (ANE) alsoemerge inside the CD<missing VAR>W phase, despite the absence of long-range magnetic order.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Magneto-Seebeck effect and ambipolar Nernst effect in CsV$_3$Sb$_5$ superconductor|Yuhan Gan,Wei Xia,Long Zhang,Kunya Yang,Xinrun Mi,Aifeng Wang,Yisheng Chai,Yanfeng Guo,Xiaoyuan Zhou,Mingquan He###
(1247928, 1247928)
 Sublinear Nernst signal as a functionof magnetic field, together with large anomalous Nernst effect (ANE) alsoemerge inside the CD<missing VAR>W phase, despite the absence of long-range magnetic order.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Magneto-Seebeck effect and ambipolar Nernst effect in CsV$_3$Sb$_5$ superconductor|Yuhan Gan,Wei Xia,Long Zhang,Kunya Yang,Xinrun Mi,Aifeng Wang,Yisheng Chai,Yanfeng Guo,Xiaoyuan Zhou,Mingquan He###
(1248013, 1248013)
These findings suggest that, the transport properties are dominated by smallpockets with multi-band profile, and that the unusual band topology also playsan import role in the CD<missing VAR>W state of CsV3Sb5.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Magneto-Seebeck effect and ambipolar Nernst effect in CsV$_3$Sb$_5$ superconductor|Yuhan Gan,Wei Xia,Long Zhang,Kunya Yang,Xinrun Mi,Aifeng Wang,Yisheng Chai,Yanfeng Guo,Xiaoyuan Zhou,Mingquan He###
(1248015, 1248015)
These findings suggest that, the transport properties are dominated by smallpockets with multi-band profile, and that the unusual band topology also playsan import role in the CD<missing VAR>W state of CsV3Sb5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CsV3Sb5
###Magneto-Seebeck effect and ambipolar Nernst effect in CsV$_3$Sb$_5$ superconductor|Yuhan Gan,Wei Xia,Long Zhang,Kunya Yang,Xinrun Mi,Aifeng Wang,Yisheng Chai,Yanfeng Guo,Xiaoyuan Zhou,Mingquan He###
(1248021, 1248025)
These findings suggest that, the transport properties are dominated by smallpockets with multi-band profile, and that the unusual band topology also playsan import role in the CD<missing VAR>W state of CsV3Sb5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5555555555555556,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Electron transport in folded bilayer-bilayer graphene/hexagonal boron nitride superlattices under high magnetic fields|Takuya Iwasaki,Motoi Kimata,Yoshifumi Morita,Shu Nakaharai,Yutaka Wakayama,Eiichiro Watanabe,Daiju Tsuya,Kenji Watanabe,Takashi Taniguchi,Satoshi Moriyama###
(1248105, 1248105)
 Employing graphene as a template, we fabricate moire<missing VAR> superlattices bystacking bilayer or folded bilayer-bilayer graphene (BLG or f<missing VAR>BBLG) andhexagonal boron nitride (h<missing VAR>BN), i.e.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[218.0, 13, ',', 6]

BB
###Electron transport in folded bilayer-bilayer graphene/hexagonal boron nitride superlattices under high magnetic fields|Takuya Iwasaki,Motoi Kimata,Yoshifumi Morita,Shu Nakaharai,Yutaka Wakayama,Eiichiro Watanabe,Daiju Tsuya,Kenji Watanabe,Takashi Taniguchi,Satoshi Moriyama###
(1248112, 1248113)
 Employing graphene as a template, we fabricate moire<missing VAR> superlattices bystacking bilayer or folded bilayer-bilayer graphene (BLG or f<missing VAR>BBLG) andhexagonal boron nitride (h<missing VAR>BN), i.e.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[210.0, 13, ',', 6]

N
###Electron transport in folded bilayer-bilayer graphene/hexagonal boron nitride superlattices under high magnetic fields|Takuya Iwasaki,Motoi Kimata,Yoshifumi Morita,Shu Nakaharai,Yutaka Wakayama,Eiichiro Watanabe,Daiju Tsuya,Kenji Watanabe,Takashi Taniguchi,Satoshi Moriyama###
(1248130, 1248130)
 Employing graphene as a template, we fabricate moire<missing VAR> superlattices bystacking bilayer or folded bilayer-bilayer graphene (BLG or f<missing VAR>BBLG) andhexagonal boron nitride (h<missing VAR>BN), i.e.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[193.0, 13, ',', 6]

BN/B
###Electron transport in folded bilayer-bilayer graphene/hexagonal boron nitride superlattices under high magnetic fields|Takuya Iwasaki,Motoi Kimata,Yoshifumi Morita,Shu Nakaharai,Yutaka Wakayama,Eiichiro Watanabe,Daiju Tsuya,Kenji Watanabe,Takashi Taniguchi,Satoshi Moriyama###
(1248141, 1248144)
, h<missing VAR>BN/BLG/h<missing VAR>BN or h<missing VAR>BN/f<missing VAR>BBLG/h<missing VAR>BN stacks, witha small twist angle between the graphene and one of the two h<missing VAR>BN layers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[179.0, 13, ',', 5]

BN
###Electron transport in folded bilayer-bilayer graphene/hexagonal boron nitride superlattices under high magnetic fields|Takuya Iwasaki,Motoi Kimata,Yoshifumi Morita,Shu Nakaharai,Yutaka Wakayama,Eiichiro Watanabe,Daiju Tsuya,Kenji Watanabe,Takashi Taniguchi,Satoshi Moriyama###
(1248149, 1248150)
, h<missing VAR>BN/BLG/h<missing VAR>BN or h<missing VAR>BN/f<missing VAR>BBLG/h<missing VAR>BN stacks, witha small twist angle between the graphene and one of the two h<missing VAR>BN layers.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 13, ',', 5]

BN
###Electron transport in folded bilayer-bilayer graphene/hexagonal boron nitride superlattices under high magnetic fields|Takuya Iwasaki,Motoi Kimata,Yoshifumi Morita,Shu Nakaharai,Yutaka Wakayama,Eiichiro Watanabe,Daiju Tsuya,Kenji Watanabe,Takashi Taniguchi,Satoshi Moriyama###
(1248155, 1248156)
, h<missing VAR>BN/BLG/h<missing VAR>BN or h<missing VAR>BN/f<missing VAR>BBLG/h<missing VAR>BN stacks, witha small twist angle between the graphene and one of the two h<missing VAR>BN layers.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 13, ',', 5]

BB
###Electron transport in folded bilayer-bilayer graphene/hexagonal boron nitride superlattices under high magnetic fields|Takuya Iwasaki,Motoi Kimata,Yoshifumi Morita,Shu Nakaharai,Yutaka Wakayama,Eiichiro Watanabe,Daiju Tsuya,Kenji Watanabe,Takashi Taniguchi,Satoshi Moriyama###
(1248159, 1248160)
, h<missing VAR>BN/BLG/h<missing VAR>BN or h<missing VAR>BN/f<missing VAR>BBLG/h<missing VAR>BN stacks, witha small twist angle between the graphene and one of the two h<missing VAR>BN layers.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 13, ',', 5]

BN
###Electron transport in folded bilayer-bilayer graphene/hexagonal boron nitride superlattices under high magnetic fields|Takuya Iwasaki,Motoi Kimata,Yoshifumi Morita,Shu Nakaharai,Yutaka Wakayama,Eiichiro Watanabe,Daiju Tsuya,Kenji Watanabe,Takashi Taniguchi,Satoshi Moriyama###
(1248165, 1248166)
, h<missing VAR>BN/BLG/h<missing VAR>BN or h<missing VAR>BN/f<missing VAR>BBLG/h<missing VAR>BN stacks, witha small twist angle between the graphene and one of the two h<missing VAR>BN layers.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 13, ',', 5]

BN
###Electron transport in folded bilayer-bilayer graphene/hexagonal boron nitride superlattices under high magnetic fields|Takuya Iwasaki,Motoi Kimata,Yoshifumi Morita,Shu Nakaharai,Yutaka Wakayama,Eiichiro Watanabe,Daiju Tsuya,Kenji Watanabe,Takashi Taniguchi,Satoshi Moriyama###
(1248199, 1248200)
, h<missing VAR>BN/BLG/h<missing VAR>BN or h<missing VAR>BN/f<missing VAR>BBLG/h<missing VAR>BN stacks, witha small twist angle between the graphene and one of the two h<missing VAR>BN layers.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 13, ',', 5]

BN
###Electron transport in folded bilayer-bilayer graphene/hexagonal boron nitride superlattices under high magnetic fields|Takuya Iwasaki,Motoi Kimata,Yoshifumi Morita,Shu Nakaharai,Yutaka Wakayama,Eiichiro Watanabe,Daiju Tsuya,Kenji Watanabe,Takashi Taniguchi,Satoshi Moriyama###
(1248221, 1248222)
 Becauseof the modulation due to the h<missing VAR>BN, higher-generation Dirac points can emergewith a narrow bandwidth and van Hove singularities.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 13, ',', 4]

In
###Electron transport in folded bilayer-bilayer graphene/hexagonal boron nitride superlattices under high magnetic fields|Takuya Iwasaki,Motoi Kimata,Yoshifumi Morita,Shu Nakaharai,Yutaka Wakayama,Eiichiro Watanabe,Daiju Tsuya,Kenji Watanabe,Takashi Taniguchi,Satoshi Moriyama###
(1248255, 1248255)
 In the moire<missing VAR> superlatticedevices, we can therefore access the higher-generation Dirac points by in-situgate tuning.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 13, ',', 3]

B
###Electron transport in folded bilayer-bilayer graphene/hexagonal boron nitride superlattices under high magnetic fields|Takuya Iwasaki,Motoi Kimata,Yoshifumi Morita,Shu Nakaharai,Yutaka Wakayama,Eiichiro Watanabe,Daiju Tsuya,Kenji Watanabe,Takashi Taniguchi,Satoshi Moriyama###
(1248402, 1248402)
 We also comment on the temperature dependence of theresistivity and magnetoresistance with reference to the plain BLG data for acomparative study.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 13, ',', 2]

In
###Higher-order Oscillatory Planar Hall Effect in Topological Kagome Metal|Leyi Li,Enkui Yi,Bin Wang,Guoqiang Yu,Bing Shen,Zhongbo Yan,Meng Wang###
(1249134, 1249134)
 Inthis Letter, we report the observation of exotic prominent planar Hall effect(PHE) and planar anisotropic magnetoresistivity (PAMR) in strange kagome metalKV3Sb5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PH
###Higher-order Oscillatory Planar Hall Effect in Topological Kagome Metal|Leyi Li,Enkui Yi,Bin Wang,Guoqiang Yu,Bing Shen,Zhongbo Yan,Meng Wang###
(1249164, 1249165)
 Inthis Letter, we report the observation of exotic prominent planar Hall effect(PHE) and planar anisotropic magnetoresistivity (PAMR) in strange kagome metalKV3Sb5.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Higher-order Oscillatory Planar Hall Effect in Topological Kagome Metal|Leyi Li,Enkui Yi,Bin Wang,Guoqiang Yu,Bing Shen,Zhongbo Yan,Meng Wang###
(1249178, 1249178)
 Inthis Letter, we report the observation of exotic prominent planar Hall effect(PHE) and planar anisotropic magnetoresistivity (PAMR) in strange kagome metalKV3Sb5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

KV3Sb5
###Higher-order Oscillatory Planar Hall Effect in Topological Kagome Metal|Leyi Li,Enkui Yi,Bin Wang,Guoqiang Yu,Bing Shen,Zhongbo Yan,Meng Wang###
(1249193, 1249197)
 Inthis Letter, we report the observation of exotic prominent planar Hall effect(PHE) and planar anisotropic magnetoresistivity (PAMR) in strange kagome metalKV3Sb5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1111111111111111,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5555555555555556,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PH
###Higher-order Oscillatory Planar Hall Effect in Topological Kagome Metal|Leyi Li,Enkui Yi,Bin Wang,Guoqiang Yu,Bing Shen,Zhongbo Yan,Meng Wang###
(1249202, 1249203)
 The PHE<missing VAR> and PAMR, which are driven by an in-plane magnetic fieldand display sharp difference from other Hall effects driven by an out-of-planemagnetic field or magnetization, exhibit exotic higher-order oscillations insharp contrast to those following empirical rule only allowing twofoldsymmetrical oscillations.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Higher-order Oscillatory Planar Hall Effect in Topological Kagome Metal|Leyi Li,Enkui Yi,Bin Wang,Guoqiang Yu,Bing Shen,Zhongbo Yan,Meng Wang###
(1249208, 1249208)
 The PHE<missing VAR> and PAMR, which are driven by an in-plane magnetic fieldand display sharp difference from other Hall effects driven by an out-of-planemagnetic field or magnetization, exhibit exotic higher-order oscillations insharp contrast to those following empirical rule only allowing twofoldsymmetrical oscillations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Higher-order Oscillatory Planar Hall Effect in Topological Kagome Metal|Leyi Li,Enkui Yi,Bin Wang,Guoqiang Yu,Bing Shen,Zhongbo Yan,Meng Wang###
(1249344, 1249344)
 These higher-order oscillations exhibit strong fieldand temperature dependence and vanish around charge density wave (CD<missing VAR>W)transition.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Higher-order Oscillatory Planar Hall Effect in Topological Kagome Metal|Leyi Li,Enkui Yi,Bin Wang,Guoqiang Yu,Bing Shen,Zhongbo Yan,Meng Wang###
(1249346, 1249346)
 These higher-order oscillations exhibit strong fieldand temperature dependence and vanish around charge density wave (CD<missing VAR>W)transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

KV3Sb5
###Higher-order Oscillatory Planar Hall Effect in Topological Kagome Metal|Leyi Li,Enkui Yi,Bin Wang,Guoqiang Yu,Bing Shen,Zhongbo Yan,Meng Wang###
(1249387, 1249391)
 The unique transport properties suggest a significant interplay ofthe lattice, magnetic and electronic structure in KV3Sb5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1111111111111111,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5555555555555556,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PH
###Higher-order Oscillatory Planar Hall Effect in Topological Kagome Metal|Leyi Li,Enkui Yi,Bin Wang,Guoqiang Yu,Bing Shen,Zhongbo Yan,Meng Wang###
(1249424, 1249425)
 This interplaycan couple the hidden anisotropy and transport electrons leading to the novelPHE<missing VAR> and PAMR in contrast to other materials.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Higher-order Oscillatory Planar Hall Effect in Topological Kagome Metal|Leyi Li,Enkui Yi,Bin Wang,Guoqiang Yu,Bing Shen,Zhongbo Yan,Meng Wang###
(1249430, 1249430)
 This interplaycan couple the hidden anisotropy and transport electrons leading to the novelPHE<missing VAR> and PAMR in contrast to other materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(Bi0.9Sb0.1)2Se3
###Bulk Rashba spin splitting and Dirac surface state in $p$-type (Bi$_{0.9}$Sb$_{0.1})_2$Se$_3$ single crystal|P. K. Ghose,S. Bandyopadhyay,T. K. Dalui,J. -C. Tseng,J. K. Dey,R. Tomar,S. Chakraverty,S. Majumdar,I. Dasgupta,S. Giri###
(1249476, 1249484)
Bulk Rashba spin splitting and Dirac surface state in p<missing VAR>-type (Bi0.9Sb0.1)2Se3 single crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.04,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.36,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 30, 'K', 2]

S
###Bulk Rashba spin splitting and Dirac surface state in $p$-type (Bi$_{0.9}$Sb$_{0.1})_2$Se$_3$ single crystal|P. K. Ghose,S. Bandyopadhyay,T. K. Dalui,J. -C. Tseng,J. K. Dey,R. Tomar,S. Chakraverty,S. Majumdar,I. Dasgupta,S. Giri###
(1249506, 1249506)
 We report bulk Rashba spin splitting (R<missing VAR>SS) and associated Dirac surface statein (Bi0.9Sb0.1)2Se3, exhibiting dominant p<missing VAR>-type conductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 30, 'K', 1]

(Bi0.9Sb0.1)2Se3
###Bulk Rashba spin splitting and Dirac surface state in $p$-type (Bi$_{0.9}$Sb$_{0.1})_2$Se$_3$ single crystal|P. K. Ghose,S. Bandyopadhyay,T. K. Dalui,J. -C. Tseng,J. K. Dey,R. Tomar,S. Chakraverty,S. Majumdar,I. Dasgupta,S. Giri###
(1249522, 1249530)
 We report bulk Rashba spin splitting (R<missing VAR>SS) and associated Dirac surface statein (Bi0.9Sb0.1)2Se3, exhibiting dominant p<missing VAR>-type conductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.04,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.36,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 30, 'K', 1]

SS
###Bulk Rashba spin splitting and Dirac surface state in $p$-type (Bi$_{0.9}$Sb$_{0.1})_2$Se$_3$ single crystal|P. K. Ghose,S. Bandyopadhyay,T. K. Dalui,J. -C. Tseng,J. K. Dey,R. Tomar,S. Chakraverty,S. Majumdar,I. Dasgupta,S. Giri###
(1249570, 1249571)
We argue from the synchrotron diffraction studies that origin of the bulk R<missing VAR>SSis due to a structural transition to a non-centrosymmetric R3m phase belowsim 30 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 30, 'K', 0]

H
###Bulk Rashba spin splitting and Dirac surface state in $p$-type (Bi$_{0.9}$Sb$_{0.1})_2$Se$_3$ single crystal|P. K. Ghose,S. Bandyopadhyay,T. K. Dalui,J. -C. Tseng,J. K. Dey,R. Tomar,S. Chakraverty,S. Majumdar,I. Dasgupta,S. Giri###
(1249619, 1249619)
 The Shubnikov-de Haas Van (SdH) oscillations observed in themagnetoresistance curves at low temperature and the Landau level fan diagram,as obtained from these oscillations, confirm the presence of nontrivial Diracsurface state.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 30, 'K', 1]

SS
###Bulk Rashba spin splitting and Dirac surface state in $p$-type (Bi$_{0.9}$Sb$_{0.1})_2$Se$_3$ single crystal|P. K. Ghose,S. Bandyopadhyay,T. K. Dalui,J. -C. Tseng,J. K. Dey,R. Tomar,S. Chakraverty,S. Majumdar,I. Dasgupta,S. Giri###
(1249714, 1249715)
 The magnetization data at low temperature exhibit substantialorbital magnetization consistent with the bulk R<missing VAR>SS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 30, 'K', 2]

SS
###Bulk Rashba spin splitting and Dirac surface state in $p$-type (Bi$_{0.9}$Sb$_{0.1})_2$Se$_3$ single crystal|P. K. Ghose,S. Bandyopadhyay,T. K. Dalui,J. -C. Tseng,J. K. Dey,R. Tomar,S. Chakraverty,S. Majumdar,I. Dasgupta,S. Giri###
(1249732, 1249733)
 The existance of both thebulk R<missing VAR>SS and Dirac surface states are confirmed by first principles densityfunctional theory calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 30, 'K', 3]

SS
###Bulk Rashba spin splitting and Dirac surface state in $p$-type (Bi$_{0.9}$Sb$_{0.1})_2$Se$_3$ single crystal|P. K. Ghose,S. Bandyopadhyay,T. K. Dalui,J. -C. Tseng,J. K. Dey,R. Tomar,S. Chakraverty,S. Majumdar,I. Dasgupta,S. Giri###
(1249775, 1249776)
 Coexistence of orbital magnetism, bulk R<missing VAR>SS, andDirac surface state is unique for p<missing VAR>-type (Bi0.9Sb0.1)2Se3,making it an ideal candidate for spintronic applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[171.0, 30, 'K', 4]

(Bi0.9Sb0.1)2Se3
###Bulk Rashba spin splitting and Dirac surface state in $p$-type (Bi$_{0.9}$Sb$_{0.1})_2$Se$_3$ single crystal|P. K. Ghose,S. Bandyopadhyay,T. K. Dalui,J. -C. Tseng,J. K. Dey,R. Tomar,S. Chakraverty,S. Majumdar,I. Dasgupta,S. Giri###
(1249798, 1249806)
 Coexistence of orbital magnetism, bulk R<missing VAR>SS, andDirac surface state is unique for p<missing VAR>-type (Bi0.9Sb0.1)2Se3,making it an ideal candidate for spintronic applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.04,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.36,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[194.0, 30, 'K', 4]

At
###Graphene's non-equilibrium fermions reveal Doppler-shifted magnetophonon resonances accompanied by Mach supersonic and Landau velocity effects|M. T. Greenaway,P. Kumaravadivel,J. Wengraf,L. A. Ponomarenko,A. I. Berdyugin. J. Li,J. H. Edgar,R. Krishna Kumar,A. K. Geim,L. Eaves###
(1249914, 1249914)
 Athigh currents, electrons are driven far from equilibrium with the atomiclattice vibrations so that their kinetic energy can exceed the thermal energyof the phonons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Zn
###A Heavy-Fermion Zn-deficient CaBe2Ge2-Type Phase with Rare Ce-based Ferromagnetism and Large Magnetoresistance|Robin Lefèvre,Fabian O von Rohr###
(1250230, 1250230)
A Heavy-Fermion Zn-deficient CaBe2Ge2-Type Phase with Rare Ce-based Ferromagnetism and Large Magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[176.0, 6.6, 'K', 4],[207.0, 10, 'K', 4]

CaBe2Ge2
###A Heavy-Fermion Zn-deficient CaBe2Ge2-Type Phase with Rare Ce-based Ferromagnetism and Large Magnetoresistance|Robin Lefèvre,Fabian O von Rohr###
(1250234, 1250238)
A Heavy-Fermion Zn-deficient CaBe2Ge2-Type Phase with Rare Ce-based Ferromagnetism and Large Magnetoresistance.
Featurization terminated normally.
0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[168.0, 6.6, 'K', 4],[199.0, 10, 'K', 4]

Ce
###A Heavy-Fermion Zn-deficient CaBe2Ge2-Type Phase with Rare Ce-based Ferromagnetism and Large Magnetoresistance|Robin Lefèvre,Fabian O von Rohr###
(1250248, 1250248)
A Heavy-Fermion Zn-deficient CaBe2Ge2-Type Phase with Rare Ce-based Ferromagnetism and Large Magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 6.6, 'K', 4],[189.0, 10, 'K', 4]

CeZn2-dGe2
###A Heavy-Fermion Zn-deficient CaBe2Ge2-Type Phase with Rare Ce-based Ferromagnetism and Large Magnetoresistance|Robin Lefèvre,Fabian O von Rohr###
(1250275, 1250281)
 We report on the hitherto unknown compound CeZn2-dGe2 (d<missing VAR> approx 0.41).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[125.0, 6.6, 'K', 3],[156.0, 10, 'K', 3]

CaBe2Ge2
###A Heavy-Fermion Zn-deficient CaBe2Ge2-Type Phase with Rare Ce-based Ferromagnetism and Large Magnetoresistance|Robin Lefèvre,Fabian O von Rohr###
(1250322, 1250326)
 Wefind this compound to crystallize in a defect version of the well-knownCaBe2Ge2 structure type.
Featurization terminated normally.
0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 6.6, 'K', 2],[111.0, 10, 'K', 2]

Zn/In
###A Heavy-Fermion Zn-deficient CaBe2Ge2-Type Phase with Rare Ce-based Ferromagnetism and Large Magnetoresistance|Robin Lefèvre,Fabian O von Rohr###
(1250343, 1250345)
 The phase forms in a Zn/In flux and with Zn-deficiencyon one of its crystallographic sites.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[61.0, 6.6, 'K', 1],[92.0, 10, 'K', 1]

Zn
###A Heavy-Fermion Zn-deficient CaBe2Ge2-Type Phase with Rare Ce-based Ferromagnetism and Large Magnetoresistance|Robin Lefèvre,Fabian O von Rohr###
(1250353, 1250353)
 The phase forms in a Zn/In flux and with Zn-deficiencyon one of its crystallographic sites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 6.6, 'K', 1],[84.0, 10, 'K', 1]

Ce
###A Heavy-Fermion Zn-deficient CaBe2Ge2-Type Phase with Rare Ce-based Ferromagnetism and Large Magnetoresistance|Robin Lefèvre,Fabian O von Rohr###
(1250388, 1250388)
 We find the compound to display uncommonlocalized Ce-based (4f<missing VAR>1) ferromagnetism with a Tc  6.6 K, a large positivemagnetoresistance reaching an MR of approximately 32 % below T<missing VAR>  10 K, andstrongly correlated electrons, as evidenced by a Kadowaki-Woods ratio A/gamma2close to known heavy fermion compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 6.6, 'K', 0],[49.0, 10, 'K', 0]

Tc
###A Heavy-Fermion Zn-deficient CaBe2Ge2-Type Phase with Rare Ce-based Ferromagnetism and Large Magnetoresistance|Robin Lefèvre,Fabian O von Rohr###
(1250404, 1250404)
 We find the compound to display uncommonlocalized Ce-based (4f<missing VAR>1) ferromagnetism with a Tc  6.6 K, a large positivemagnetoresistance reaching an MR of approximately 32 % below T<missing VAR>  10 K, andstrongly correlated electrons, as evidenced by a Kadowaki-Woods ratio A/gamma2close to known heavy fermion compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 6.6, 'K', 0],[33.0, 10, 'K', 0]

LiTi2O4
###Evidence for unconventional superconductivity in a spinel oxide|Huanyi Xue,Lijie Wang,Zhongjie Wang,Guanqun Zhang,Wei Peng,Shiwei Wu,Chunlei Gao,Zhenghua An,Yan Chen,Wei Li###
(1250587, 1250591)
 The charge frustration with the mixed-valence state inherent toLiTi2O4, which is found to be a unique spinel oxide superconductor, isthe impetus for paying special attention to reveal the existence of intriguingsuperconducting properties.
Featurization terminated normally.
0,0,0.14285714285714285,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LiTi2O4
###Evidence for unconventional superconductivity in a spinel oxide|Huanyi Xue,Lijie Wang,Zhongjie Wang,Guanqun Zhang,Wei Peng,Shiwei Wu,Chunlei Gao,Zhenghua An,Yan Chen,Wei Li###
(1250683, 1250687)
 Here, we report a pronounced fourfold rotationalsymmetry of the superconductivity in high-quality single-crystallineLiTi2O4 (001) thin films.
Featurization terminated normally.
0,0,0.14285714285714285,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Evidence for unconventional superconductivity in a spinel oxide|Huanyi Xue,Lijie Wang,Zhongjie Wang,Guanqun Zhang,Wei Peng,Shiwei Wu,Chunlei Gao,Zhenghua An,Yan Chen,Wei Li###
(1250828, 1250828)
 We attribute this behavior to the unconventionald<missing VAR>-wave superconducting Cooper pairs with the irreducible representation ofEg protected by Oh<missing VAR> point group in LiTi2O4.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LiTi2O4
###Evidence for unconventional superconductivity in a spinel oxide|Huanyi Xue,Lijie Wang,Zhongjie Wang,Guanqun Zhang,Wei Peng,Shiwei Wu,Chunlei Gao,Zhenghua An,Yan Chen,Wei Li###
(1250837, 1250841)
 We attribute this behavior to the unconventionald<missing VAR>-wave superconducting Cooper pairs with the irreducible representation ofEg protected by Oh<missing VAR> point group in LiTi2O4.
Featurization terminated normally.
0,0,0.14285714285714285,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

IrTe2
###Spatially-resolved electronic structure of stripe domains in IrTe$_2$ through electronic structure microscopy|Changhua Bao,Hongyun Zhang,Qian Li,Shaohua Zhou,Haoxiong Zhang,Ke Deng,Kenan Zhang,Laipeng Luo,Wei Yao,Chaoyu Chen,José Avila,Maria C. Asensio,Yang Wu,Shuyun Zhou###
(1250928, 1250930)
Spatially-resolved electronic structure of stripe domains in IrTe2 through electronic structure microscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[224.0, 3, 'equivalent', 4]

S
###Spatially-resolved electronic structure of stripe domains in IrTe$_2$ through electronic structure microscopy|Changhua Bao,Hongyun Zhang,Qian Li,Shaohua Zhou,Haoxiong Zhang,Ke Deng,Kenan Zhang,Laipeng Luo,Wei Yao,Chaoyu Chen,José Avila,Maria C. Asensio,Yang Wu,Shuyun Zhou###
(1251080, 1251080)
 Here by using nanometer- and micrometer-spot angle-resolvedphotoemission spectroscopies (NanoARPES and MicroARPES), we reveal thespatially-resolved electronic structure in the stripe phase of IrTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 3, 'equivalent', 1]

S
###Spatially-resolved electronic structure of stripe domains in IrTe$_2$ through electronic structure microscopy|Changhua Bao,Hongyun Zhang,Qian Li,Shaohua Zhou,Haoxiong Zhang,Ke Deng,Kenan Zhang,Laipeng Luo,Wei Yao,Chaoyu Chen,José Avila,Maria C. Asensio,Yang Wu,Shuyun Zhou###
(1251089, 1251089)
 Here by using nanometer- and micrometer-spot angle-resolvedphotoemission spectroscopies (NanoARPES and MicroARPES), we reveal thespatially-resolved electronic structure in the stripe phase of IrTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 3, 'equivalent', 1]

IrTe2
###Spatially-resolved electronic structure of stripe domains in IrTe$_2$ through electronic structure microscopy|Changhua Bao,Hongyun Zhang,Qian Li,Shaohua Zhou,Haoxiong Zhang,Ke Deng,Kenan Zhang,Laipeng Luo,Wei Yao,Chaoyu Chen,José Avila,Maria C. Asensio,Yang Wu,Shuyun Zhou###
(1251118, 1251120)
 Here by using nanometer- and micrometer-spot angle-resolvedphotoemission spectroscopies (NanoARPES and MicroARPES), we reveal thespatially-resolved electronic structure in the stripe phase of IrTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 3, 'equivalent', 1]

IrTe2
###Spatially-resolved electronic structure of stripe domains in IrTe$_2$ through electronic structure microscopy|Changhua Bao,Hongyun Zhang,Qian Li,Shaohua Zhou,Haoxiong Zhang,Ke Deng,Kenan Zhang,Laipeng Luo,Wei Yao,Chaoyu Chen,José Avila,Maria C. Asensio,Yang Wu,Shuyun Zhou###
(1251246, 1251248)
 Moreover, such electronic structure inhomogeneity disappears acrossthe stripe phase transition, suggesting that electronic phase with brokensymmetry induced by the 6times1 modulation is directly related to the stripephase transition of IrTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 3, 'equivalent', 1]

S
###Spatially-resolved electronic structure of stripe domains in IrTe$_2$ through electronic structure microscopy|Changhua Bao,Hongyun Zhang,Qian Li,Shaohua Zhou,Haoxiong Zhang,Ke Deng,Kenan Zhang,Laipeng Luo,Wei Yao,Chaoyu Chen,José Avila,Maria C. Asensio,Yang Wu,Shuyun Zhou###
(1251268, 1251268)
 Our work demonstrates the capability of NanoARPESand MicroARPES in elucidating the fundamental physics of phase-separatedmaterials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 3, 'equivalent', 2]

S
###Spatially-resolved electronic structure of stripe domains in IrTe$_2$ through electronic structure microscopy|Changhua Bao,Hongyun Zhang,Qian Li,Shaohua Zhou,Haoxiong Zhang,Ke Deng,Kenan Zhang,Laipeng Luo,Wei Yao,Chaoyu Chen,José Avila,Maria C. Asensio,Yang Wu,Shuyun Zhou###
(1251278, 1251278)
 Our work demonstrates the capability of NanoARPESand MicroARPES in elucidating the fundamental physics of phase-separatedmaterials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 3, 'equivalent', 2]

In
###Influence of Device Geometry on Transport Properties of Topological Insulator Microflakes|Fan Gao,Yongqing Li###
(1251331, 1251331)
 In the transport studies of topological insulators, microflakes exfoliatedfrom bulk single crystals are often used because of the convenience in samplepreparation and the accessibility to high carrier mobilities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BN
###Nature of the 1/f Noise in Graphene, Direct Evidence for the Mobility Fluctuations Mechanism|Adil Rehman,Juan Antonio Delgado Notario,Juan Salvador Sanchez,Yahya Moubarak Meziani,Grzegorz Cywiński,Wojciech Knap,Alexander A. Balandin,Michael Levinshtein,Sergey Rumyantsev###
(1251748, 1251749)
 Here wemeasured noise in h<missing VAR>-BN encapsulated graphene transistor under the condition ofgeometrical magnetoresistance to directly assess the mechanism of low-frequencyelectronic current fluctuations.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(B)
###Nature of the 1/f Noise in Graphene, Direct Evidence for the Mobility Fluctuations Mechanism|Adil Rehman,Juan Antonio Delgado Notario,Juan Salvador Sanchez,Yahya Moubarak Meziani,Grzegorz Cywiński,Wojciech Knap,Alexander A. Balandin,Michael Levinshtein,Sergey Rumyantsev###
(1251838, 1251840)
 It was found that the relative noise spectraldensity of the graphene resistance fluctuations depends non-monotonically onthe magnetic field (B) with a minimum at approximately u<missing VAR>B1 (u<missing VAR> is the electronmobility).
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B1
###Nature of the 1/f Noise in Graphene, Direct Evidence for the Mobility Fluctuations Mechanism|Adil Rehman,Juan Antonio Delgado Notario,Juan Salvador Sanchez,Yahya Moubarak Meziani,Grzegorz Cywiński,Wojciech Knap,Alexander A. Balandin,Michael Levinshtein,Sergey Rumyantsev###
(1251853, 1251854)
 It was found that the relative noise spectraldensity of the graphene resistance fluctuations depends non-monotonically onthe magnetic field (B) with a minimum at approximately u<missing VAR>B1 (u<missing VAR> is the electronmobility).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

AlSi
###Quantum oscillations in Noncentrosymmetric Weyl semimetals RAlSi (R = Sm and Ce)|Weizheng Cao,Qi Wang,Cuiying Pei,Lingling Gao,Yi Zhao,Changhua Li,Na Yu,Jinghui Wang,Yulin Chen,Jun Li,Yanpeng Qi###
(1251993, 1251994)
Quantum oscillations in Noncentrosymmetric Weyl semimetals R<missing VAR>AlSi (R<missing VAR>  Sm and Ce).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[177.0, 900, '%', 3],[188.0, 80, '%', 3],[198.0, 1.8, 'K', 3]

Sm
###Quantum oscillations in Noncentrosymmetric Weyl semimetals RAlSi (R = Sm and Ce)|Weizheng Cao,Qi Wang,Cuiying Pei,Lingling Gao,Yi Zhao,Changhua Li,Na Yu,Jinghui Wang,Yulin Chen,Jun Li,Yanpeng Qi###
(1252000, 1252000)
Quantum oscillations in Noncentrosymmetric Weyl semimetals R<missing VAR>AlSi (R<missing VAR>  Sm and Ce).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[171.0, 900, '%', 3],[182.0, 80, '%', 3],[192.0, 1.8, 'K', 3]

Ce
###Quantum oscillations in Noncentrosymmetric Weyl semimetals RAlSi (R = Sm and Ce)|Weizheng Cao,Qi Wang,Cuiying Pei,Lingling Gao,Yi Zhao,Changhua Li,Na Yu,Jinghui Wang,Yulin Chen,Jun Li,Yanpeng Qi###
(1252004, 1252004)
Quantum oscillations in Noncentrosymmetric Weyl semimetals R<missing VAR>AlSi (R<missing VAR>  Sm and Ce).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 900, '%', 3],[178.0, 80, '%', 3],[188.0, 1.8, 'K', 3]

WS
###Quantum oscillations in Noncentrosymmetric Weyl semimetals RAlSi (R = Sm and Ce)|Weizheng Cao,Qi Wang,Cuiying Pei,Lingling Gao,Yi Zhao,Changhua Li,Na Yu,Jinghui Wang,Yulin Chen,Jun Li,Yanpeng Qi###
(1252013, 1252014)
 Weyl semimetal (WSM) as a new type of quantum state of matter hosting lowenergy relativistic quasiparticles, has attracted significant attention forboth scientific community and potential quantum device applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 900, '%', 2],[168.0, 80, '%', 2],[178.0, 1.8, 'K', 2]

AlSi
###Quantum oscillations in Noncentrosymmetric Weyl semimetals RAlSi (R = Sm and Ce)|Weizheng Cao,Qi Wang,Cuiying Pei,Lingling Gao,Yi Zhao,Changhua Li,Na Yu,Jinghui Wang,Yulin Chen,Jun Li,Yanpeng Qi###
(1252111, 1252112)
 Here, wereport a comprehensive investigation of the structural, magnetic and transportproperties of noncentrosymmetric R<missing VAR>AlSi (R<missing VAR>  Sm, Ce), which have been predictedto be new magnetic WSM<missing VAR> candidates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 900, '%', 1],[70.0, 80, '%', 1],[80.0, 1.8, 'K', 1]

Sm
###Quantum oscillations in Noncentrosymmetric Weyl semimetals RAlSi (R = Sm and Ce)|Weizheng Cao,Qi Wang,Cuiying Pei,Lingling Gao,Yi Zhao,Changhua Li,Na Yu,Jinghui Wang,Yulin Chen,Jun Li,Yanpeng Qi###
(1252118, 1252118)
 Here, wereport a comprehensive investigation of the structural, magnetic and transportproperties of noncentrosymmetric R<missing VAR>AlSi (R<missing VAR>  Sm, Ce), which have been predictedto be new magnetic WSM<missing VAR> candidates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 900, '%', 1],[64.0, 80, '%', 1],[74.0, 1.8, 'K', 1]

Ce
###Quantum oscillations in Noncentrosymmetric Weyl semimetals RAlSi (R = Sm and Ce)|Weizheng Cao,Qi Wang,Cuiying Pei,Lingling Gao,Yi Zhao,Changhua Li,Na Yu,Jinghui Wang,Yulin Chen,Jun Li,Yanpeng Qi###
(1252121, 1252121)
 Here, wereport a comprehensive investigation of the structural, magnetic and transportproperties of noncentrosymmetric R<missing VAR>AlSi (R<missing VAR>  Sm, Ce), which have been predictedto be new magnetic WSM<missing VAR> candidates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 900, '%', 1],[61.0, 80, '%', 1],[71.0, 1.8, 'K', 1]

WS
###Quantum oscillations in Noncentrosymmetric Weyl semimetals RAlSi (R = Sm and Ce)|Weizheng Cao,Qi Wang,Cuiying Pei,Lingling Gao,Yi Zhao,Changhua Li,Na Yu,Jinghui Wang,Yulin Chen,Jun Li,Yanpeng Qi###
(1252142, 1252143)
 Here, wereport a comprehensive investigation of the structural, magnetic and transportproperties of noncentrosymmetric R<missing VAR>AlSi (R<missing VAR>  Sm, Ce), which have been predictedto be new magnetic WSM<missing VAR> candidates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 900, '%', 1],[39.0, 80, '%', 1],[49.0, 1.8, 'K', 1]

SmAlSi
###Quantum oscillations in Noncentrosymmetric Weyl semimetals RAlSi (R = Sm and Ce)|Weizheng Cao,Qi Wang,Cuiying Pei,Lingling Gao,Yi Zhao,Changhua Li,Na Yu,Jinghui Wang,Yulin Chen,Jun Li,Yanpeng Qi###
(1252176, 1252178)
 Both samples exhibit non-saturatedmagnetoresistance (MR), with  900% for SmAlSi and 80% for CeAlSi at 1.8 K, 9T<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 900, '%', 0],[4.0, 80, '%', 0],[14.0, 1.8, 'K', 0]

CeAlSi
###Quantum oscillations in Noncentrosymmetric Weyl semimetals RAlSi (R = Sm and Ce)|Weizheng Cao,Qi Wang,Cuiying Pei,Lingling Gao,Yi Zhao,Changhua Li,Na Yu,Jinghui Wang,Yulin Chen,Jun Li,Yanpeng Qi###
(1252187, 1252189)
 Both samples exhibit non-saturatedmagnetoresistance (MR), with  900% for SmAlSi and 80% for CeAlSi at 1.8 K, 9T<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 900, '%', 0],[5.0, 80, '%', 0],[3.0, 1.8, 'K', 0]

SmAlSi
###Quantum oscillations in Noncentrosymmetric Weyl semimetals RAlSi (R = Sm and Ce)|Weizheng Cao,Qi Wang,Cuiying Pei,Lingling Gao,Yi Zhao,Changhua Li,Na Yu,Jinghui Wang,Yulin Chen,Jun Li,Yanpeng Qi###
(1252209, 1252211)
 The carrier densities of SmAlSi and CeAlSi display remarkable change aroundmagnetic transition temperatures, signifying that the electronic states aresensitive to magnetic ordering of rare earth elements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 900, '%', 1],[27.0, 80, '%', 1],[17.0, 1.8, 'K', 1]

CeAlSi
###Quantum oscillations in Noncentrosymmetric Weyl semimetals RAlSi (R = Sm and Ce)|Weizheng Cao,Qi Wang,Cuiying Pei,Lingling Gao,Yi Zhao,Changhua Li,Na Yu,Jinghui Wang,Yulin Chen,Jun Li,Yanpeng Qi###
(1252215, 1252217)
 The carrier densities of SmAlSi and CeAlSi display remarkable change aroundmagnetic transition temperatures, signifying that the electronic states aresensitive to magnetic ordering of rare earth elements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 900, '%', 1],[33.0, 80, '%', 1],[23.0, 1.8, 'K', 1]

At
###Quantum oscillations in Noncentrosymmetric Weyl semimetals RAlSi (R = Sm and Ce)|Weizheng Cao,Qi Wang,Cuiying Pei,Lingling Gao,Yi Zhao,Changhua Li,Na Yu,Jinghui Wang,Yulin Chen,Jun Li,Yanpeng Qi###
(1252265, 1252265)
 At low temperatures,SmAlSi reveals prominent Shubnikov-de Haas (SdH) oscillations associated withthe nontrivial Berry phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 900, '%', 2],[83.0, 80, '%', 2],[73.0, 1.8, 'K', 2]

SmAlSi
###Quantum oscillations in Noncentrosymmetric Weyl semimetals RAlSi (R = Sm and Ce)|Weizheng Cao,Qi Wang,Cuiying Pei,Lingling Gao,Yi Zhao,Changhua Li,Na Yu,Jinghui Wang,Yulin Chen,Jun Li,Yanpeng Qi###
(1252273, 1252275)
 At low temperatures,SmAlSi reveals prominent Shubnikov-de Haas (SdH) oscillations associated withthe nontrivial Berry phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 900, '%', 2],[91.0, 80, '%', 2],[81.0, 1.8, 'K', 2]

H
###Quantum oscillations in Noncentrosymmetric Weyl semimetals RAlSi (R = Sm and Ce)|Weizheng Cao,Qi Wang,Cuiying Pei,Lingling Gao,Yi Zhao,Changhua Li,Na Yu,Jinghui Wang,Yulin Chen,Jun Li,Yanpeng Qi###
(1252289, 1252289)
 At low temperatures,SmAlSi reveals prominent Shubnikov-de Haas (SdH) oscillations associated withthe nontrivial Berry phase.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 900, '%', 2],[107.0, 80, '%', 2],[97.0, 1.8, 'K', 2]

WS
###Quantum oscillations in Noncentrosymmetric Weyl semimetals RAlSi (R = Sm and Ce)|Weizheng Cao,Qi Wang,Cuiying Pei,Lingling Gao,Yi Zhao,Changhua Li,Na Yu,Jinghui Wang,Yulin Chen,Jun Li,Yanpeng Qi###
(1252355, 1252356)
 Our results wouldyield valuable insights of WSM<missing VAR> physics and potentials in application to thenext-generation spintronic devices in RAX family.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[184.0, 900, '%', 4],[173.0, 80, '%', 4],[163.0, 1.8, 'K', 4]

Fe2Ge
###Magnetotransport in ferromagnetic Fe$_2$Ge semimetallic thin films|Andrew W. Forbes,Niraj Bhattarai,Christopher Gassen,Raghad S. H. Saqat,Ian L. Pegg,John Philip###
(1252405, 1252407)
Magnetotransport in ferromagnetic Fe2Ge semimetallic thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe2Ge
###Magnetotransport in ferromagnetic Fe$_2$Ge semimetallic thin films|Andrew W. Forbes,Niraj Bhattarai,Christopher Gassen,Raghad S. H. Saqat,Ian L. Pegg,John Philip###
(1252426, 1252428)
 Thin films of the ferromagnet Fe2Ge were grown via molecular beam epitaxy,and their electrical and magneto-transport properties measured for the firsttime.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe2Ge
###Magnetotransport in ferromagnetic Fe$_2$Ge semimetallic thin films|Andrew W. Forbes,Niraj Bhattarai,Christopher Gassen,Raghad S. H. Saqat,Ian L. Pegg,John Philip###
(1252495, 1252497)
 X<missing VAR>-ray diffraction and vibrating sample magnetometry measurementsconfirmed the crystalline ferromagnetic Fe2Ge phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Magnetotransport in ferromagnetic Fe$_2$Ge semimetallic thin films|Andrew W. Forbes,Niraj Bhattarai,Christopher Gassen,Raghad S. H. Saqat,Ian L. Pegg,John Philip###
(1252619, 1252619)
 Measurements of the Hallresistivity, rhoxy, show contributions from both the ordinary Hall effectand anomalous Hall effect, rhoxyAH, from which we determined thecharge carrier concentration and mobility.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe2Ge
###Magnetotransport in ferromagnetic Fe$_2$Ge semimetallic thin films|Andrew W. Forbes,Niraj Bhattarai,Christopher Gassen,Raghad S. H. Saqat,Ian L. Pegg,John Philip###
(1252675, 1252677)
Fe2Ge holds promise as a useful spintronic material, especially for itssemiconductor compatibility.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbSe2
###Magnetic Proximity-Induced Superconducting Diode Effect and Infinite Magnetoresistance in van der Waals Heterostructure|Jeacheol Shin,Suhan Son,Jonginn Yun,Giung Park,Kaixuan Zhang,Young Jae Shin,Je-Geun Park,Dohun Kim###
(1252758, 1252760)
 We report unidirectional charge transport in a mathrmNbSe2noncentrosymmetric superconductor, which is exchange-coupled with amathrmCrPS4 van der Waals layered antiferromagnetic insulator.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 16, '%', 1],[159.0, 40, '%', 2]

CrPS4
###Magnetic Proximity-Induced Superconducting Diode Effect and Infinite Magnetoresistance in van der Waals Heterostructure|Jeacheol Shin,Suhan Son,Jonginn Yun,Giung Park,Kaixuan Zhang,Young Jae Shin,Je-Geun Park,Dohun Kim###
(1252782, 1252785)
 We report unidirectional charge transport in a mathrmNbSe2noncentrosymmetric superconductor, which is exchange-coupled with amathrmCrPS4 van der Waals layered antiferromagnetic insulator.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0.6666666666666666,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 16, '%', 1],[134.0, 40, '%', 2]

NbSe2/CrPS4
###Magnetic Proximity-Induced Superconducting Diode Effect and Infinite Magnetoresistance in van der Waals Heterostructure|Jeacheol Shin,Suhan Son,Jonginn Yun,Giung Park,Kaixuan Zhang,Young Jae Shin,Je-Geun Park,Dohun Kim###
(1252804, 1252811)
 ThemathrmNbSe2/CrPS4 bilayer device exhibits bias-dependent superconductingcritical-current variations of up to 16%, with the magnetochiral anisotropyreaching sim 105mathrm T<missing VAR>-1A-1.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[27.0, 16, '%', 0],[108.0, 40, '%', 1]

CrPS4/NbSe2/CrPS4
###Magnetic Proximity-Induced Superconducting Diode Effect and Infinite Magnetoresistance in van der Waals Heterostructure|Jeacheol Shin,Suhan Son,Jonginn Yun,Giung Park,Kaixuan Zhang,Young Jae Shin,Je-Geun Park,Dohun Kim###
(1252874, 1252886)
 Furthermore, themathrmCrPS4/NbSe2/CrPS4 spin-valve structure exhibits thesuperconducting diode effect with critical-current variations of up to 40%.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[36.0, 16, '%', 1],[33.0, 40, '%', 0]

H
###Unidirectional spin Hall magnetoresistance and spin-orbit torques in HM$_1$/Co/HM$_2$ trilayer systems|Anastasiia Moskaltsova,Denis Dyck,Jan-Michael Schmalhorst,Günter Reiss,Timo Kuschel###
(1253081, 1253081)
Unidirectional spin Hall magnetoresistance and spin-orbit torques in HM<missing VAR>1/Co/HM<missing VAR>2 trilayer systems.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[252.0, 20, '%', 4],[276.0, 27, '%', 5]

Co/H
###Unidirectional spin Hall magnetoresistance and spin-orbit torques in HM$_1$/Co/HM$_2$ trilayer systems|Anastasiia Moskaltsova,Denis Dyck,Jan-Michael Schmalhorst,Günter Reiss,Timo Kuschel###
(1253085, 1253087)
Unidirectional spin Hall magnetoresistance and spin-orbit torques in HM<missing VAR>1/Co/HM<missing VAR>2 trilayer systems.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[246.0, 20, '%', 4],[270.0, 27, '%', 5]

Pt/Co/Ta
###Unidirectional spin Hall magnetoresistance and spin-orbit torques in HM$_1$/Co/HM$_2$ trilayer systems|Anastasiia Moskaltsova,Denis Dyck,Jan-Michael Schmalhorst,Günter Reiss,Timo Kuschel###
(1253129, 1253133)
 We present a detailed analysis of harmonic longitudinal and Hall voltagemeasurements for in-plane magnetized Pt/Co/Ta and Ta/Co/Pt trilayers inreference to Pt/Co and Ta/Co bilayers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[200.0, 20, '%', 3],[224.0, 27, '%', 4]

Ta/Co/Pt
###Unidirectional spin Hall magnetoresistance and spin-orbit torques in HM$_1$/Co/HM$_2$ trilayer systems|Anastasiia Moskaltsova,Denis Dyck,Jan-Michael Schmalhorst,Günter Reiss,Timo Kuschel###
(1253137, 1253141)
 We present a detailed analysis of harmonic longitudinal and Hall voltagemeasurements for in-plane magnetized Pt/Co/Ta and Ta/Co/Pt trilayers inreference to Pt/Co and Ta/Co bilayers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[192.0, 20, '%', 3],[216.0, 27, '%', 4]

Pt/Co
###Unidirectional spin Hall magnetoresistance and spin-orbit torques in HM$_1$/Co/HM$_2$ trilayer systems|Anastasiia Moskaltsova,Denis Dyck,Jan-Michael Schmalhorst,Günter Reiss,Timo Kuschel###
(1253152, 1253154)
 We present a detailed analysis of harmonic longitudinal and Hall voltagemeasurements for in-plane magnetized Pt/Co/Ta and Ta/Co/Pt trilayers inreference to Pt/Co and Ta/Co bilayers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[179.0, 20, '%', 3],[203.0, 27, '%', 4]

Ta/Co
###Unidirectional spin Hall magnetoresistance and spin-orbit torques in HM$_1$/Co/HM$_2$ trilayer systems|Anastasiia Moskaltsova,Denis Dyck,Jan-Michael Schmalhorst,Günter Reiss,Timo Kuschel###
(1253158, 1253160)
 We present a detailed analysis of harmonic longitudinal and Hall voltagemeasurements for in-plane magnetized Pt/Co/Ta and Ta/Co/Pt trilayers inreference to Pt/Co and Ta/Co bilayers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[173.0, 20, '%', 3],[197.0, 27, '%', 4]

SO
###Unidirectional spin Hall magnetoresistance and spin-orbit torques in HM$_1$/Co/HM$_2$ trilayer systems|Anastasiia Moskaltsova,Denis Dyck,Jan-Michael Schmalhorst,Günter Reiss,Timo Kuschel###
(1253176, 1253177)
 Enhancement of spin-orbit torques (SOTs)and unidirectional spin Hall magnetoresistance (USMR) is achieved byintroducing the second heavy metal (HM) with the opposite sign of the spin Hallangle.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 20, '%', 2],[180.0, 27, '%', 3]

US
###Unidirectional spin Hall magnetoresistance and spin-orbit torques in HM$_1$/Co/HM$_2$ trilayer systems|Anastasiia Moskaltsova,Denis Dyck,Jan-Michael Schmalhorst,Günter Reiss,Timo Kuschel###
(1253193, 1253194)
 Enhancement of spin-orbit torques (SOTs)and unidirectional spin Hall magnetoresistance (USMR) is achieved byintroducing the second heavy metal (HM) with the opposite sign of the spin Hallangle.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
[139.0, 20, '%', 2],[163.0, 27, '%', 3]

H
###Unidirectional spin Hall magnetoresistance and spin-orbit torques in HM$_1$/Co/HM$_2$ trilayer systems|Anastasiia Moskaltsova,Denis Dyck,Jan-Michael Schmalhorst,Günter Reiss,Timo Kuschel###
(1253217, 1253217)
 Enhancement of spin-orbit torques (SOTs)and unidirectional spin Hall magnetoresistance (USMR) is achieved byintroducing the second heavy metal (HM) with the opposite sign of the spin Hallangle.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 20, '%', 2],[140.0, 27, '%', 3]

SO
###Unidirectional spin Hall magnetoresistance and spin-orbit torques in HM$_1$/Co/HM$_2$ trilayer systems|Anastasiia Moskaltsova,Denis Dyck,Jan-Michael Schmalhorst,Günter Reiss,Timo Kuschel###
(1253245, 1253246)
 The extracted SOT<missing VAR> efficiencies are larger for the trilayers as comparedto the bilayers, confirming the enhanced values reported for the trilayers withperpendicularly magnetized Co.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 20, '%', 1],[111.0, 27, '%', 2]

Co
###Unidirectional spin Hall magnetoresistance and spin-orbit torques in HM$_1$/Co/HM$_2$ trilayer systems|Anastasiia Moskaltsova,Denis Dyck,Jan-Michael Schmalhorst,Günter Reiss,Timo Kuschel###
(1253296, 1253296)
 The extracted SOT<missing VAR> efficiencies are larger for the trilayers as comparedto the bilayers, confirming the enhanced values reported for the trilayers withperpendicularly magnetized Co.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 20, '%', 1],[61.0, 27, '%', 2]

Pt/Co/Ta
###Unidirectional spin Hall magnetoresistance and spin-orbit torques in HM$_1$/Co/HM$_2$ trilayer systems|Anastasiia Moskaltsova,Denis Dyck,Jan-Michael Schmalhorst,Günter Reiss,Timo Kuschel###
(1253318, 1253322)
 The maximum effective spin Hall angle found forthe Pt/Co/Ta trilayer reaches thetaSH  20%.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[11.0, 20, '%', 0],[35.0, 27, '%', 1]

SH
###Unidirectional spin Hall magnetoresistance and spin-orbit torques in HM$_1$/Co/HM$_2$ trilayer systems|Anastasiia Moskaltsova,Denis Dyck,Jan-Michael Schmalhorst,Günter Reiss,Timo Kuschel###
(1253329, 1253330)
 The maximum effective spin Hall angle found forthe Pt/Co/Ta trilayer reaches thetaSH  20%.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 20, '%', 0],[27.0, 27, '%', 1]

US
###Unidirectional spin Hall magnetoresistance and spin-orbit torques in HM$_1$/Co/HM$_2$ trilayer systems|Anastasiia Moskaltsova,Denis Dyck,Jan-Michael Schmalhorst,Günter Reiss,Timo Kuschel###
(1253339, 1253340)
 The USMR of the trilayeryields up to 27% higher effect as for the respective bilayers with the largesteffective USMR amplitude of -0.32 times 10-5 for the Pt/Co/Ta trilayerat a charge current density of 107 A/cm2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
[6.0, 20, '%', 1],[17.0, 27, '%', 0]

US
###Unidirectional spin Hall magnetoresistance and spin-orbit torques in HM$_1$/Co/HM$_2$ trilayer systems|Anastasiia Moskaltsova,Denis Dyck,Jan-Michael Schmalhorst,Günter Reiss,Timo Kuschel###
(1253383, 1253384)
 The USMR of the trilayeryields up to 27% higher effect as for the respective bilayers with the largesteffective USMR amplitude of -0.32 times 10-5 for the Pt/Co/Ta trilayerat a charge current density of 107 A/cm2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
[50.0, 20, '%', 1],[26.0, 27, '%', 0]

Pt/Co/Ta
###Unidirectional spin Hall magnetoresistance and spin-orbit torques in HM$_1$/Co/HM$_2$ trilayer systems|Anastasiia Moskaltsova,Denis Dyck,Jan-Michael Schmalhorst,Günter Reiss,Timo Kuschel###
(1253405, 1253409)
 The USMR of the trilayeryields up to 27% higher effect as for the respective bilayers with the largesteffective USMR amplitude of -0.32 times 10-5 for the Pt/Co/Ta trilayerat a charge current density of 107 A/cm2.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[72.0, 20, '%', 1],[48.0, 27, '%', 0]

I
###Chiral Coupling between Magnetic Layers with Orthogonal Magnetization|Can Onur Avci,Charles-Henri Lambert,Giacomo Sala,Pietro Gambardella###
(1253486, 1253486)
 We report on the occurrence of strong interlayer Dzyaloshinskii-Moriyainteraction (DMI) between an in-plane magnetized Co layer and a perpendicularlymagnetized TbFe layer through a Pt spacer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Chiral Coupling between Magnetic Layers with Orthogonal Magnetization|Can Onur Avci,Charles-Henri Lambert,Giacomo Sala,Pietro Gambardella###
(1253499, 1253499)
 We report on the occurrence of strong interlayer Dzyaloshinskii-Moriyainteraction (DMI) between an in-plane magnetized Co layer and a perpendicularlymagnetized TbFe layer through a Pt spacer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TbFe
###Chiral Coupling between Magnetic Layers with Orthogonal Magnetization|Can Onur Avci,Charles-Henri Lambert,Giacomo Sala,Pietro Gambardella###
(1253512, 1253513)
 We report on the occurrence of strong interlayer Dzyaloshinskii-Moriyainteraction (DMI) between an in-plane magnetized Co layer and a perpendicularlymagnetized TbFe layer through a Pt spacer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Chiral Coupling between Magnetic Layers with Orthogonal Magnetization|Can Onur Avci,Charles-Henri Lambert,Giacomo Sala,Pietro Gambardella###
(1253521, 1253521)
 We report on the occurrence of strong interlayer Dzyaloshinskii-Moriyainteraction (DMI) between an in-plane magnetized Co layer and a perpendicularlymagnetized TbFe layer through a Pt spacer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Chiral Coupling between Magnetic Layers with Orthogonal Magnetization|Can Onur Avci,Charles-Henri Lambert,Giacomo Sala,Pietro Gambardella###
(1253530, 1253530)
 The DMI causes a chiral couplingthat favors one-handed orthogonal magnetic configurations of Co and TbFe, whichwe reveal through Hall effect and magnetoresistance measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Chiral Coupling between Magnetic Layers with Orthogonal Magnetization|Can Onur Avci,Charles-Henri Lambert,Giacomo Sala,Pietro Gambardella###
(1253557, 1253557)
 The DMI causes a chiral couplingthat favors one-handed orthogonal magnetic configurations of Co and TbFe, whichwe reveal through Hall effect and magnetoresistance measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TbFe
###Chiral Coupling between Magnetic Layers with Orthogonal Magnetization|Can Onur Avci,Charles-Henri Lambert,Giacomo Sala,Pietro Gambardella###
(1253561, 1253562)
 The DMI causes a chiral couplingthat favors one-handed orthogonal magnetic configurations of Co and TbFe, whichwe reveal through Hall effect and magnetoresistance measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Chiral Coupling between Magnetic Layers with Orthogonal Magnetization|Can Onur Avci,Charles-Henri Lambert,Giacomo Sala,Pietro Gambardella###
(1253589, 1253589)
 The DMIcoupling mediated by Pt causes effective magnetic fields on either layer of upto 10-15 mT, which decrease monotonously with increasing Pt thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Chiral Coupling between Magnetic Layers with Orthogonal Magnetization|Can Onur Avci,Charles-Henri Lambert,Giacomo Sala,Pietro Gambardella###
(1253598, 1253598)
 The DMIcoupling mediated by Pt causes effective magnetic fields on either layer of upto 10-15 mT, which decrease monotonously with increasing Pt thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Chiral Coupling between Magnetic Layers with Orthogonal Magnetization|Can Onur Avci,Charles-Henri Lambert,Giacomo Sala,Pietro Gambardella###
(1253639, 1253639)
 The DMIcoupling mediated by Pt causes effective magnetic fields on either layer of upto 10-15 mT, which decrease monotonously with increasing Pt thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ru
###Chiral Coupling between Magnetic Layers with Orthogonal Magnetization|Can Onur Avci,Charles-Henri Lambert,Giacomo Sala,Pietro Gambardella###
(1253644, 1253644)
 Ru, Ta,and Ti spacers mediate a significantly smaller coupling compared to Pt,highlighting the essential role of Pt in inducing the interlayer DMI.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ta
###Chiral Coupling between Magnetic Layers with Orthogonal Magnetization|Can Onur Avci,Charles-Henri Lambert,Giacomo Sala,Pietro Gambardella###
(1253647, 1253647)
 Ru, Ta,and Ti spacers mediate a significantly smaller coupling compared to Pt,highlighting the essential role of Pt in inducing the interlayer DMI.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ti
###Chiral Coupling between Magnetic Layers with Orthogonal Magnetization|Can Onur Avci,Charles-Henri Lambert,Giacomo Sala,Pietro Gambardella###
(1253653, 1253653)
 Ru, Ta,and Ti spacers mediate a significantly smaller coupling compared to Pt,highlighting the essential role of Pt in inducing the interlayer DMI.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Chiral Coupling between Magnetic Layers with Orthogonal Magnetization|Can Onur Avci,Charles-Henri Lambert,Giacomo Sala,Pietro Gambardella###
(1253671, 1253671)
 Ru, Ta,and Ti spacers mediate a significantly smaller coupling compared to Pt,highlighting the essential role of Pt in inducing the interlayer DMI.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Chiral Coupling between Magnetic Layers with Orthogonal Magnetization|Can Onur Avci,Charles-Henri Lambert,Giacomo Sala,Pietro Gambardella###
(1253685, 1253685)
 Ru, Ta,and Ti spacers mediate a significantly smaller coupling compared to Pt,highlighting the essential role of Pt in inducing the interlayer DMI.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Chiral Coupling between Magnetic Layers with Orthogonal Magnetization|Can Onur Avci,Charles-Henri Lambert,Giacomo Sala,Pietro Gambardella###
(1253697, 1253697)
 Ru, Ta,and Ti spacers mediate a significantly smaller coupling compared to Pt,highlighting the essential role of Pt in inducing the interlayer DMI.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Chiral Coupling between Magnetic Layers with Orthogonal Magnetization|Can Onur Avci,Charles-Henri Lambert,Giacomo Sala,Pietro Gambardella###
(1253732, 1253732)
 Theseresults are relevant to understand and maximize the interlayer coupling inducedby the DMI as well as to design spintronic devices with chiral spin textures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoP4
###High-Pressure Synthesis of a Massive and Non-Symmorphic Dirac Semimetal Candidate MoP$_4$|Alex Hiro Mayo,Jon Alexander Richards,Hidefumi Takahashi,Shintaro Ishiwata###
(1254112, 1254114)
High-Pressure Synthesis of a Massive and Non-Symmorphic Dirac Semimetal Candidate MoP4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoP4
###High-Pressure Synthesis of a Massive and Non-Symmorphic Dirac Semimetal Candidate MoP$_4$|Alex Hiro Mayo,Jon Alexander Richards,Hidefumi Takahashi,Shintaro Ishiwata###
(1254129, 1254131)
 Single crystal and polycrystalline samples of MoP4 with ablack-phosphorus-derived structure have been successfully synthesized by ahigh-pressure technique.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(SOC)
###High-Pressure Synthesis of a Massive and Non-Symmorphic Dirac Semimetal Candidate MoP$_4$|Alex Hiro Mayo,Jon Alexander Richards,Hidefumi Takahashi,Shintaro Ishiwata###
(1254331, 1254335)
 The Dirac node along the Gamma-X<missing VAR> direction normal tothe phosphorus layers is gapped out in the presence of spin-orbit coupling(SOC), whereas the band crossing at the Z<missing VAR>-point is immune to SOC because of thenon-symmorphic symmetry.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SOC
###High-Pressure Synthesis of a Massive and Non-Symmorphic Dirac Semimetal Candidate MoP$_4$|Alex Hiro Mayo,Jon Alexander Richards,Hidefumi Takahashi,Shintaro Ishiwata###
(1254360, 1254362)
 The Dirac node along the Gamma-X<missing VAR> direction normal tothe phosphorus layers is gapped out in the presence of spin-orbit coupling(SOC), whereas the band crossing at the Z<missing VAR>-point is immune to SOC because of thenon-symmorphic symmetry.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sn1-x
###Observation of coexisting weak localization and superconducting fluctuations in strained Sn1-xInxTe thin films|Jiashu Wang,William Powers,Zhan Zhang,Michael Smith,Bradlee J. McIntosh,Seul-Ki Bac,Logan Riney,Maksym Zhukovskyi,Tatyana Orlova,Leonid P. Rokhinson,Yi-Ting Hsu,Xinyu Liu,Badih A. Assaf###
(1254449, 1254452)
Observation of coexisting weak localization and superconducting fluctuations in strained Sn1-xInxTe thin films.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[77.0, 0, '<', 2]

Te
###Observation of coexisting weak localization and superconducting fluctuations in strained Sn1-xInxTe thin films|Jiashu Wang,William Powers,Zhan Zhang,Michael Smith,Bradlee J. McIntosh,Seul-Ki Bac,Logan Riney,Maksym Zhukovskyi,Tatyana Orlova,Leonid P. Rokhinson,Yi-Ting Hsu,Xinyu Liu,Badih A. Assaf###
(1254454, 1254454)
Observation of coexisting weak localization and superconducting fluctuations in strained Sn1-xInxTe thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 0, '<', 2]

Sn1-x
###Observation of coexisting weak localization and superconducting fluctuations in strained Sn1-xInxTe thin films|Jiashu Wang,William Powers,Zhan Zhang,Michael Smith,Bradlee J. McIntosh,Seul-Ki Bac,Logan Riney,Maksym Zhukovskyi,Tatyana Orlova,Leonid P. Rokhinson,Yi-Ting Hsu,Xinyu Liu,Badih A. Assaf###
(1254516, 1254519)
 Candidate topological superconductor Sn1-xInxTe thin films(0<x<missing VAR><0.3) grown by molecular beam epitaxy and strained in the (111) plane areshown to host three coexisting quantum effects localization, antilocalizationand superconducting fluctuations above the critical temperature Tc.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[10.0, 0, '<', 0]

Te
###Observation of coexisting weak localization and superconducting fluctuations in strained Sn1-xInxTe thin films|Jiashu Wang,William Powers,Zhan Zhang,Michael Smith,Bradlee J. McIntosh,Seul-Ki Bac,Logan Riney,Maksym Zhukovskyi,Tatyana Orlova,Leonid P. Rokhinson,Yi-Ting Hsu,Xinyu Liu,Badih A. Assaf###
(1254521, 1254521)
 Candidate topological superconductor Sn1-xInxTe thin films(0<x<missing VAR><0.3) grown by molecular beam epitaxy and strained in the (111) plane areshown to host three coexisting quantum effects localization, antilocalizationand superconducting fluctuations above the critical temperature Tc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 0, '<', 0]

Tc
###Observation of coexisting weak localization and superconducting fluctuations in strained Sn1-xInxTe thin films|Jiashu Wang,William Powers,Zhan Zhang,Michael Smith,Bradlee J. McIntosh,Seul-Ki Bac,Logan Riney,Maksym Zhukovskyi,Tatyana Orlova,Leonid P. Rokhinson,Yi-Ting Hsu,Xinyu Liu,Badih A. Assaf###
(1254597, 1254597)
 Candidate topological superconductor Sn1-xInxTe thin films(0<x<missing VAR><0.3) grown by molecular beam epitaxy and strained in the (111) plane areshown to host three coexisting quantum effects localization, antilocalizationand superconducting fluctuations above the critical temperature Tc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 0, '<', 0]

Tc
###Observation of coexisting weak localization and superconducting fluctuations in strained Sn1-xInxTe thin films|Jiashu Wang,William Powers,Zhan Zhang,Michael Smith,Bradlee J. McIntosh,Seul-Ki Bac,Logan Riney,Maksym Zhukovskyi,Tatyana Orlova,Leonid P. Rokhinson,Yi-Ting Hsu,Xinyu Liu,Badih A. Assaf###
(1254696, 1254696)
 A large enhancement of the conductivity isobserved above Tc, indicating that quantum coherent quasiparticle effectscoexist with superconducting fluctuations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 0, '<', 3]

Fe/Mg4Al
###Enhanced Tunnel magnetoresistance in Fe/Mg4Al-Ox/Fe(001) Magnetic Tunnel Junctions|Thomas Scheike,Zhenchao Wen,Hiroaki Sukegawa,Seiji Mitani###
(1254784, 1254788)
Enhanced Tunnel magnetoresistance in Fe/Mg4Al-Ox/Fe(001) Magnetic Tunnel Junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[79.0, 429, '%', 2],[95.0, 1, ',', 2],[97.0, 34, '%', 2],[101.0, 10, 'K', 2],[226.0, 125, '%', 3]

MgAl2O4
###Enhanced Tunnel magnetoresistance in Fe/Mg4Al-Ox/Fe(001) Magnetic Tunnel Junctions|Thomas Scheike,Zhenchao Wen,Hiroaki Sukegawa,Seiji Mitani###
(1254806, 1254810)
 Spinel MgAl2O4 and family oxides are emerging barrier materials useful formagnetic tunnel junctions (MTJs).
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0.14285714285714285,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 429, '%', 1],[73.0, 1, ',', 1],[75.0, 34, '%', 1],[79.0, 10, 'K', 1],[204.0, 125, '%', 2]

Fe/MgAl2O4
###Enhanced Tunnel magnetoresistance in Fe/Mg4Al-Ox/Fe(001) Magnetic Tunnel Junctions|Thomas Scheike,Zhenchao Wen,Hiroaki Sukegawa,Seiji Mitani###
(1254896, 1254902)
 We report large tunnel magnetoresistance(TMR) ratios up to 429% at room temperature (RT) and 1,034% at 10 K in aFe/MgAl2O4/Fe(001)-based MTJ prepared using electron-beam evaporation ofMg4Al-Ox.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[29.0, 429, '%', 0],[13.0, 1, ',', 0],[11.0, 34, '%', 0],[7.0, 10, 'K', 0],[112.0, 125, '%', 1]

Mg4Al
###Enhanced Tunnel magnetoresistance in Fe/Mg4Al-Ox/Fe(001) Magnetic Tunnel Junctions|Thomas Scheike,Zhenchao Wen,Hiroaki Sukegawa,Seiji Mitani###
(1254928, 1254930)
 We report large tunnel magnetoresistance(TMR) ratios up to 429% at room temperature (RT) and 1,034% at 10 K in aFe/MgAl2O4/Fe(001)-based MTJ prepared using electron-beam evaporation ofMg4Al-Ox.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0.8,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 429, '%', 0],[45.0, 1, ',', 0],[43.0, 34, '%', 0],[39.0, 10, 'K', 0],[84.0, 125, '%', 1]

Fe/MgO
###Enhanced Tunnel magnetoresistance in Fe/Mg4Al-Ox/Fe(001) Magnetic Tunnel Junctions|Thomas Scheike,Zhenchao Wen,Hiroaki Sukegawa,Seiji Mitani###
(1254974, 1254977)
 Resistance oscillations with a MTJ barrier thickness of 0.3-nm weresignificantly enhanced compared to those of a Fe/MgO/Fe(001) MTJ, resulting ina large TMR oscillation peak-to-valley difference of 125% at RT.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[107.0, 429, '%', 1],[91.0, 1, ',', 1],[89.0, 34, '%', 1],[85.0, 10, 'K', 1],[37.0, 125, '%', 0]

V
###Enhanced Tunnel magnetoresistance in Fe/Mg4Al-Ox/Fe(001) Magnetic Tunnel Junctions|Thomas Scheike,Zhenchao Wen,Hiroaki Sukegawa,Seiji Mitani###
(1255087, 1255087)
 Thedifferential conductance spectra were symmetric with bias polarity, and thespectrum in the parallel magnetization state at low temperature demonstratesignificant peaks within broad local minima at 0.2-0.6 V, indicating improvedbarrier interfaces by the Mg4Al-Ox barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[220.0, 429, '%', 2],[204.0, 1, ',', 2],[202.0, 34, '%', 2],[198.0, 10, 'K', 2],[73.0, 125, '%', 1]

Mg4Al
###Enhanced Tunnel magnetoresistance in Fe/Mg4Al-Ox/Fe(001) Magnetic Tunnel Junctions|Thomas Scheike,Zhenchao Wen,Hiroaki Sukegawa,Seiji Mitani###
(1255103, 1255105)
 Thedifferential conductance spectra were symmetric with bias polarity, and thespectrum in the parallel magnetization state at low temperature demonstratesignificant peaks within broad local minima at 0.2-0.6 V, indicating improvedbarrier interfaces by the Mg4Al-Ox barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0.8,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[236.0, 429, '%', 2],[220.0, 1, ',', 2],[218.0, 34, '%', 2],[214.0, 10, 'K', 2],[89.0, 125, '%', 1]

Ni3In2S2
###Endless Dirac nodal lines in kagome-metal Ni3In2S2|Tiantian Zhang,T. Yilmaz,E. Vescovo,H. X. Li,R. G. Moore,H. N. Lee,H. Miao,S. Murakami,M. A. McGuire###
(1255540, 1255545)
Endless Dirac nodal lines in kagome-metal Ni3In2S2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[318.0, 2000, '%', 6],[322.0, 9, 'T', 6]

In
###Endless Dirac nodal lines in kagome-metal Ni3In2S2|Tiantian Zhang,T. Yilmaz,E. Vescovo,H. X. Li,R. G. Moore,H. N. Lee,H. Miao,S. Murakami,M. A. McGuire###
(1255565, 1255565)
 In multi-bandelectronic systems, topological band-crossings can form closed curves, known asnodal lines.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[298.0, 2000, '%', 4],[302.0, 9, 'T', 4]

In
###Endless Dirac nodal lines in kagome-metal Ni3In2S2|Tiantian Zhang,T. Yilmaz,E. Vescovo,H. X. Li,R. G. Moore,H. N. Lee,H. Miao,S. Murakami,M. A. McGuire###
(1255602, 1255602)
 In the presence of spin-orbit coupling and/or symmetry-breakingoperations, topological nodal lines can break into Dirac/Weyl nodes and giverise to novel transport properties, such as the chiral anomaly and giantanomalous Hall effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[261.0, 2000, '%', 3],[265.0, 9, 'T', 3]

Co3Sn2S2
###Endless Dirac nodal lines in kagome-metal Ni3In2S2|Tiantian Zhang,T. Yilmaz,E. Vescovo,H. X. Li,R. G. Moore,H. N. Lee,H. Miao,S. Murakami,M. A. McGuire###
(1255715, 1255720)
 Recently the time-reversal symmetry-breaking inducedWeyl fermions are observed in a kagome-metal Co3Sn2S2, triggering interests innodal-line excitations in multiband kagome systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 2000, '%', 2],[147.0, 9, 'T', 2]

Ni3
###Endless Dirac nodal lines in kagome-metal Ni3In2S2|Tiantian Zhang,T. Yilmaz,E. Vescovo,H. X. Li,R. G. Moore,H. N. Lee,H. Miao,S. Murakami,M. A. McGuire###
(1255816, 1255817)
 Here, usingfirst-principles calculations and symmetry based indicator theories, we findsix endless nodal lines along the stacking direction of kagome layers and twonodal rings in the kagome plane in nonmagnetic Ni3 In2 S2 .
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 2000, '%', 1],[50.0, 9, 'T', 1]

In2
###Endless Dirac nodal lines in kagome-metal Ni3In2S2|Tiantian Zhang,T. Yilmaz,E. Vescovo,H. X. Li,R. G. Moore,H. N. Lee,H. Miao,S. Murakami,M. A. McGuire###
(1255819, 1255820)
 Here, usingfirst-principles calculations and symmetry based indicator theories, we findsix endless nodal lines along the stacking direction of kagome layers and twonodal rings in the kagome plane in nonmagnetic Ni3 In2 S2 .
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 2000, '%', 1],[47.0, 9, 'T', 1]

S2
###Endless Dirac nodal lines in kagome-metal Ni3In2S2|Tiantian Zhang,T. Yilmaz,E. Vescovo,H. X. Li,R. G. Moore,H. N. Lee,H. Miao,S. Murakami,M. A. McGuire###
(1255822, 1255823)
 Here, usingfirst-principles calculations and symmetry based indicator theories, we findsix endless nodal lines along the stacking direction of kagome layers and twonodal rings in the kagome plane in nonmagnetic Ni3 In2 S2 .
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 2000, '%', 1],[44.0, 9, 'T', 1]

Eu5In2Sb6
###Microscopic probe of magnetic polarons in antiferromagnetic Eu$_{5}$In$_{2}$Sb$_{6}$|J. C. Souza,S. M. Thomas,E. D. Bauer,J. D. Thompson,F. Ronning,P. G. Pagliuso,P. F. S. Rosa###
(1255918, 1255923)
Microscopic probe of magnetic polarons in antiferromagnetic Eu5In2Sb6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15384615384615385,0,0.46153846153846156,0,0,0,0,0,0,0,0,0,0,0,0.38461538461538464,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[213.0, 200, 'K', 5]

C
###Microscopic probe of magnetic polarons in antiferromagnetic Eu$_{5}$In$_{2}$Sb$_{6}$|J. C. Souza,S. M. Thomas,E. D. Bauer,J. D. Thompson,F. Ronning,P. G. Pagliuso,P. F. S. Rosa###
(1255931, 1255931)
 Colossal magnetoresistance (CMR) emerges from intertwined spin and chargedegrees of freedom in the form of ferromagnetic clusters also known as trappedmagnetic polarons.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, 200, 'K', 4]

As
###Microscopic probe of magnetic polarons in antiferromagnetic Eu$_{5}$In$_{2}$Sb$_{6}$|J. C. Souza,S. M. Thomas,E. D. Bauer,J. D. Thompson,F. Ronning,P. G. Pagliuso,P. F. S. Rosa###
(1255981, 1255981)
 As a result, CMR is rarely observed in antiferromagneticmaterials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 200, 'K', 3]

C
###Microscopic probe of magnetic polarons in antiferromagnetic Eu$_{5}$In$_{2}$Sb$_{6}$|J. C. Souza,S. M. Thomas,E. D. Bauer,J. D. Thompson,F. Ronning,P. G. Pagliuso,P. F. S. Rosa###
(1255988, 1255988)
 As a result, CMR is rarely observed in antiferromagneticmaterials.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 200, 'K', 3]

Eu5In2Sb6
###Microscopic probe of magnetic polarons in antiferromagnetic Eu$_{5}$In$_{2}$Sb$_{6}$|J. C. Souza,S. M. Thomas,E. D. Bauer,J. D. Thompson,F. Ronning,P. G. Pagliuso,P. F. S. Rosa###
(1256050, 1256055)
 Here we use electron spin resonance (ESR) to reveal microscopicevidence for the formation of magnetic polarons in antiferromagneticEu5In2Sb6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15384615384615385,0,0.46153846153846156,0,0,0,0,0,0,0,0,0,0,0,0.38461538461538464,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 200, 'K', 2]

Eu2
###Microscopic probe of magnetic polarons in antiferromagnetic Eu$_{5}$In$_{2}$Sb$_{6}$|J. C. Souza,S. M. Thomas,E. D. Bauer,J. D. Thompson,F. Ronning,P. G. Pagliuso,P. F. S. Rosa###
(1256073, 1256074)
 First, we observe a reduction of the Eu2 ESRlinewidth as a function of the applied magnetic field consistent withferromagnetic clusters that are antiferromagnetically coupled.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 200, 'K', 1]

Eu2
###Microscopic probe of magnetic polarons in antiferromagnetic Eu$_{5}$In$_{2}$Sb$_{6}$|J. C. Souza,S. M. Thomas,E. D. Bauer,J. D. Thompson,F. Ronning,P. G. Pagliuso,P. F. S. Rosa###
(1256123, 1256124)
 Additionally,the Eu2 lineshape changes markedly below T<missing VAR>  200 K, a temperature scalethat coincides with the onset of CMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 200, 'K', 0]

C
###Microscopic probe of magnetic polarons in antiferromagnetic Eu$_{5}$In$_{2}$Sb$_{6}$|J. C. Souza,S. M. Thomas,E. D. Bauer,J. D. Thompson,F. Ronning,P. G. Pagliuso,P. F. S. Rosa###
(1256158, 1256158)
 Additionally,the Eu2 lineshape changes markedly below T<missing VAR>  200 K, a temperature scalethat coincides with the onset of CMR.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 200, 'K', 0]

NdAlSi
###NdAlSi: a magnetic Weyl semimetal candidate with rich magnetic phases and atypical transport properties|Jin-Feng Wang,Qing-Xin Dong,Zhao-Peng Guo,Meng Lv,Yi-Fei Huang,Jun-Sen Xiang,Zhi-An Ren,Zhi-Jun Wang,Pei-Jie Sun,Gang Li,Gen-Fu Chen###
(1256226, 1256228)
NdAlSi a magnetic Weyl semimetal candidate with rich magnetic phases and atypical transport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[302.0, 4, 'f', 7]

WS
###NdAlSi: a magnetic Weyl semimetal candidate with rich magnetic phases and atypical transport properties|Jin-Feng Wang,Qing-Xin Dong,Zhao-Peng Guo,Meng Lv,Yi-Fei Huang,Jun-Sen Xiang,Zhi-An Ren,Zhi-Jun Wang,Pei-Jie Sun,Gang Li,Gen-Fu Chen###
(1256265, 1256266)
 Magnetic Weyl semimetals (M<missing VAR>WSM) have attracted significant attention due totheir intriguing physical properties and potential applications inspin-electronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[264.0, 4, 'f', 6]

NdAlSi
###NdAlSi: a magnetic Weyl semimetal candidate with rich magnetic phases and atypical transport properties|Jin-Feng Wang,Qing-Xin Dong,Zhao-Peng Guo,Meng Lv,Yi-Fei Huang,Jun-Sen Xiang,Zhi-An Ren,Zhi-Jun Wang,Pei-Jie Sun,Gang Li,Gen-Fu Chen###
(1256319, 1256321)
 Here we report the characterization of NdAlSiincluding transport, magnetization, and heat capacity on single crystals, aswell as band structure calculation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[209.0, 4, 'f', 5]

WS
###NdAlSi: a magnetic Weyl semimetal candidate with rich magnetic phases and atypical transport properties|Jin-Feng Wang,Qing-Xin Dong,Zhao-Peng Guo,Meng Lv,Yi-Fei Huang,Jun-Sen Xiang,Zhi-An Ren,Zhi-Jun Wang,Pei-Jie Sun,Gang Li,Gen-Fu Chen###
(1256370, 1256371)
 It is a newly proposed M<missing VAR>WSM<missing VAR> candidate whichbreaks both time-reversal and spacial inversion symmetries.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[159.0, 4, 'f', 4]

NdAlSi
###NdAlSi: a magnetic Weyl semimetal candidate with rich magnetic phases and atypical transport properties|Jin-Feng Wang,Qing-Xin Dong,Zhao-Peng Guo,Meng Lv,Yi-Fei Huang,Jun-Sen Xiang,Zhi-An Ren,Zhi-Jun Wang,Pei-Jie Sun,Gang Li,Gen-Fu Chen###
(1256503, 1256505)
 We argue that the tunability of both the topological andmagnetic properties in NdAlSi is crucial for realizing such a behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 4, 'f', 1]

WS
###NdAlSi: a magnetic Weyl semimetal candidate with rich magnetic phases and atypical transport properties|Jin-Feng Wang,Qing-Xin Dong,Zhao-Peng Guo,Meng Lv,Yi-Fei Huang,Jun-Sen Xiang,Zhi-An Ren,Zhi-Jun Wang,Pei-Jie Sun,Gang Li,Gen-Fu Chen###
(1256537, 1256538)
 Ourresults indicate that 4f-electron-based M<missing VAR>WSM<missing VAR> can provide a unique platform toexplore new and intriguing quantum phenomena arising from the interactionbetween magnetism and topology.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 4, 'f', 0]

In
###Memristive effects in nanopatterned permalloy Kagomé array|Wesley B. J. Fonseca,Flavio Garcia,Francesco Caravelli,Clodoaldo I. L de Araujo###
(1256771, 1256771)
 In the millihertz regime, aneffective model is provided to describe the experimental results for thethermistor, showing that there should be a crossover from the millihertz to thegigahertz, from a thermistor to an memresistive effect for nanopatternedpermalloy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 1, '%', 2]

La0.5Ca0.5
###Anomalous Nernst effect in La0.5Ca0.5Coo3|A. Ghosh,M. Manikandan,R. Mahendiran###
(1256875, 1256878)
Anomalous Nernst effect in La0.5Ca0.5Coo3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 147, 'K', 2],[98.0, 2, '%', 2],[118.0, 10, 'K', 3],[135.0, 6, 'kOe', 3],[146.0, 0.64, 'Bohr', 3],[161.0, 50, 'kOe', 3]

N
###Anomalous Nernst effect in La0.5Ca0.5Coo3|A. Ghosh,M. Manikandan,R. Mahendiran###
(1256903, 1256903)
 We report the occurrence of the anomalous Nernst effect (ANE) inpolycrystalline perovskite La0.5Ca0.5CoO3.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 147, 'K', 1],[73.0, 2, '%', 1],[93.0, 10, 'K', 2],[110.0, 6, 'kOe', 2],[121.0, 0.64, 'Bohr', 2],[136.0, 50, 'kOe', 2]

La0.5Ca0.5CoO3
###Anomalous Nernst effect in La0.5Ca0.5Coo3|A. Ghosh,M. Manikandan,R. Mahendiran###
(1256914, 1256920)
 We report the occurrence of the anomalous Nernst effect (ANE) inpolycrystalline perovskite La0.5Ca0.5CoO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 147, 'K', 1],[56.0, 2, '%', 1],[76.0, 10, 'K', 2],[93.0, 6, 'kOe', 2],[104.0, 0.64, 'Bohr', 2],[119.0, 50, 'kOe', 2]

C
###Anomalous Nernst effect in La0.5Ca0.5Coo3|A. Ghosh,M. Manikandan,R. Mahendiran###
(1256934, 1256934)
 The sample is ferromagnetic below T<missing VAR>C 147 K and resistivity shows non-metallic behavior above and below the T<missing VAR>C withonly a small negative magnetoresistance (2%) around T<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 147, 'K', 0],[42.0, 2, '%', 0],[62.0, 10, 'K', 1],[79.0, 6, 'kOe', 1],[90.0, 0.64, 'Bohr', 1],[105.0, 50, 'kOe', 1]

C
###Anomalous Nernst effect in La0.5Ca0.5Coo3|A. Ghosh,M. Manikandan,R. Mahendiran###
(1256960, 1256960)
 The sample is ferromagnetic below T<missing VAR>C 147 K and resistivity shows non-metallic behavior above and below the T<missing VAR>C withonly a small negative magnetoresistance (2%) around T<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 147, 'K', 0],[16.0, 2, '%', 0],[36.0, 10, 'K', 1],[53.0, 6, 'kOe', 1],[64.0, 0.64, 'Bohr', 1],[79.0, 50, 'kOe', 1]

C
###Anomalous Nernst effect in La0.5Ca0.5Coo3|A. Ghosh,M. Manikandan,R. Mahendiran###
(1256983, 1256983)
 The sample is ferromagnetic below T<missing VAR>C 147 K and resistivity shows non-metallic behavior above and below the T<missing VAR>C withonly a small negative magnetoresistance (2%) around T<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 147, 'K', 0],[7.0, 2, '%', 0],[13.0, 10, 'K', 1],[30.0, 6, 'kOe', 1],[41.0, 0.64, 'Bohr', 1],[56.0, 50, 'kOe', 1]

Co
###Anomalous Nernst effect in La0.5Ca0.5Coo3|A. Ghosh,M. Manikandan,R. Mahendiran###
(1257028, 1257028)
 Field dependence ofmagnetization at 10 K shows large hysteresis with a coercive field of 6 kOe buta small magnetization  0.64 Bohr magneton/Co even in a field of 50 kOe, whichindicates the presence of magnetically heterogeneous ground state consisting offerromagnetic and non-ferromagnetic phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 147, 'K', 1],[52.0, 2, '%', 1],[32.0, 10, 'K', 0],[15.0, 6, 'kOe', 0],[4.0, 0.64, 'Bohr', 0],[11.0, 50, 'kOe', 0]

N
###Anomalous Nernst effect in La0.5Ca0.5Coo3|A. Ghosh,M. Manikandan,R. Mahendiran###
(1257129, 1257129)
 This indicates that the ANE<missing VAR> in La0.5Ca0.5CoO3 dependsonly on the transport properties of the ferromagnetic phase, while it is notaffected by the non-ferromagnetic phase.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[192.0, 147, 'K', 3],[153.0, 2, '%', 3],[133.0, 10, 'K', 2],[116.0, 6, 'kOe', 2],[105.0, 0.64, 'Bohr', 2],[90.0, 50, 'kOe', 2]

La0.5Ca0.5CoO3
###Anomalous Nernst effect in La0.5Ca0.5Coo3|A. Ghosh,M. Manikandan,R. Mahendiran###
(1257134, 1257140)
 This indicates that the ANE<missing VAR> in La0.5Ca0.5CoO3 dependsonly on the transport properties of the ferromagnetic phase, while it is notaffected by the non-ferromagnetic phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[197.0, 147, 'K', 3],[158.0, 2, '%', 3],[138.0, 10, 'K', 2],[121.0, 6, 'kOe', 2],[110.0, 0.64, 'Bohr', 2],[95.0, 50, 'kOe', 2]

N
###Anomalous Nernst effect in La0.5Ca0.5Coo3|A. Ghosh,M. Manikandan,R. Mahendiran###
(1257215, 1257215)
 Due to the higher value of remnantSxy, the magnetized polycrystalline sample exhibits ANE<missing VAR> in absence of anexternal magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[278.0, 147, 'K', 4],[239.0, 2, '%', 4],[219.0, 10, 'K', 3],[202.0, 6, 'kOe', 3],[191.0, 0.64, 'Bohr', 3],[176.0, 50, 'kOe', 3]

FePS3
###Observation of magnetization surface textures of the van der Waals antiferromagnet FePS3 by spin Hall magnetoresistance|F. Feringa,G. E. W. Bauer,B. J. van Wees###
(1257264, 1257267)
Observation of magnetization surface textures of the van der Waals antiferromagnet FePS3 by spin Hall magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0.6,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 5, 'K', 4]

S
###Observation of magnetization surface textures of the van der Waals antiferromagnet FePS3 by spin Hall magnetoresistance|F. Feringa,G. E. W. Bauer,B. J. van Wees###
(1257356, 1257356)
 Here we report spin Hallmagnetoresistance (SMR) up to room temperature caused by the magnetic surfacetexture of exfoliated flakes of magnetic van der Waals materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 5, 'K', 1]

FePS3
###Observation of magnetization surface textures of the van der Waals antiferromagnet FePS3 by spin Hall magnetoresistance|F. Feringa,G. E. W. Bauer,B. J. van Wees###
(1257408, 1257411)
 For theantiferromagnet FePS3 the SMR amounts to 0.1 % for an applied magnetic field of7 T<missing VAR> at 5 K which implies a substantial canting of the magnetic moments relativeto the colinear antiferromagnetic order.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0.6,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 5, 'K', 0]

S
###Observation of magnetization surface textures of the van der Waals antiferromagnet FePS3 by spin Hall magnetoresistance|F. Feringa,G. E. W. Bauer,B. J. van Wees###
(1257415, 1257415)
 For theantiferromagnet FePS3 the SMR amounts to 0.1 % for an applied magnetic field of7 T<missing VAR> at 5 K which implies a substantial canting of the magnetic moments relativeto the colinear antiferromagnetic order.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 5, 'K', 0]

N
###Observation of magnetization surface textures of the van der Waals antiferromagnet FePS3 by spin Hall magnetoresistance|F. Feringa,G. E. W. Bauer,B. J. van Wees###
(1257502, 1257502)
 The canting is substantial even for amagnetic field along the Neel vector, which illustrates the unique power ofthe SMR to detect magnetic surface textures in van der Waals magnets.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 5, 'K', 1]

S
###Observation of magnetization surface textures of the van der Waals antiferromagnet FePS3 by spin Hall magnetoresistance|F. Feringa,G. E. W. Bauer,B. J. van Wees###
(1257523, 1257523)
 The canting is substantial even for amagnetic field along the Neel vector, which illustrates the unique power ofthe SMR to detect magnetic surface textures in van der Waals magnets.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 5, 'K', 1]

FeS2
###1T-FeS$_2$$:$ a new type of two-dimensional metallic ferromagnet|Govindan Kutty Rajendran Nair,Xiaoyu Ji,Dong Guo,Chao Zhu,Xiaodong Xu,Xinyi Zheng,Xue Yang,Jian Cui,Peiling Li,Xiaowei Wang,Wu Yao,Jiadong Zhou,Teddy Salim,Jian Yi,Fengcai Ma,Changli Yang,Hua Ke,Fanming Qu,Jie Shen,Xiunian Jing,Zheng Liu,Xingji Li,Guangtong Liu,Li Lu###
(1257559, 1257561)
1T<missing VAR>-FeS2 a new type of two-dimensional metallic ferromagnet.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 2, 'D', 1],[92.0, 2, 'D', 2],[171.0, 2, 'D', 3],[177.0, 1, 'T', 3],[215.0, 2, 'D', 4],[308.0, 2, 'D', 6]

FeS2
###1T-FeS$_2$$:$ a new type of two-dimensional metallic ferromagnet|Govindan Kutty Rajendran Nair,Xiaoyu Ji,Dong Guo,Chao Zhu,Xiaodong Xu,Xinyi Zheng,Xue Yang,Jian Cui,Peiling Li,Xiaowei Wang,Wu Yao,Jiadong Zhou,Teddy Salim,Jian Yi,Fengcai Ma,Changli Yang,Hua Ke,Fanming Qu,Jie Shen,Xiunian Jing,Zheng Liu,Xingji Li,Guangtong Liu,Li Lu###
(1257740, 1257742)
 Here, we reportthe successful synthesis of a new type of theoretically proposed 2D metallicferromagnet 1T FeS2, through the molten-salt-assisted chemical vapor deposition(CVD) method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 2, 'D', 2],[87.0, 2, 'D', 1],[8.0, 2, 'D', 0],[2.0, 1, 'T', 0],[34.0, 2, 'D', 1],[127.0, 2, 'D', 3]

CV
###1T-FeS$_2$$:$ a new type of two-dimensional metallic ferromagnet|Govindan Kutty Rajendran Nair,Xiaoyu Ji,Dong Guo,Chao Zhu,Xiaodong Xu,Xinyi Zheng,Xue Yang,Jian Cui,Peiling Li,Xiaowei Wang,Wu Yao,Jiadong Zhou,Teddy Salim,Jian Yi,Fengcai Ma,Changli Yang,Hua Ke,Fanming Qu,Jie Shen,Xiunian Jing,Zheng Liu,Xingji Li,Guangtong Liu,Li Lu###
(1257763, 1257764)
 Here, we reportthe successful synthesis of a new type of theoretically proposed 2D metallicferromagnet 1T FeS2, through the molten-salt-assisted chemical vapor deposition(CVD) method.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 2, 'D', 2],[110.0, 2, 'D', 1],[31.0, 2, 'D', 0],[25.0, 1, 'T', 0],[12.0, 2, 'D', 1],[105.0, 2, 'D', 3]

H
###1T-FeS$_2$$:$ a new type of two-dimensional metallic ferromagnet|Govindan Kutty Rajendran Nair,Xiaoyu Ji,Dong Guo,Chao Zhu,Xiaodong Xu,Xinyi Zheng,Xue Yang,Jian Cui,Peiling Li,Xiaowei Wang,Wu Yao,Jiadong Zhou,Teddy Salim,Jian Yi,Fengcai Ma,Changli Yang,Hua Ke,Fanming Qu,Jie Shen,Xiunian Jing,Zheng Liu,Xingji Li,Guangtong Liu,Li Lu###
(1257807, 1257807)
 The long-range 2D ferromagnetic order is confirmed by theobservation of a large anomalous Hall effect (AHE) and a hystereticmagnetoresistance.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[194.0, 2, 'D', 3],[154.0, 2, 'D', 2],[75.0, 2, 'D', 1],[69.0, 1, 'T', 1],[31.0, 2, 'D', 0],[62.0, 2, 'D', 2]

Cr1
###Giant topological and planar Hall effect in Cr$_{1/3}$NbS$_{2}$|D. A. Mayoh,J. Bouaziz,A. E. Hall,J. B. Staunton,M. R. Lees,G. Balakrishnan###
(1257925, 1257926)
Giant topological and planar Hall effect in Cr1/3NbS2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbS2
###Giant topological and planar Hall effect in Cr$_{1/3}$NbS$_{2}$|D. A. Mayoh,J. Bouaziz,A. E. Hall,J. B. Staunton,M. R. Lees,G. Balakrishnan###
(1257929, 1257931)
Giant topological and planar Hall effect in Cr1/3NbS2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr1
###Giant topological and planar Hall effect in Cr$_{1/3}$NbS$_{2}$|D. A. Mayoh,J. Bouaziz,A. E. Hall,J. B. Staunton,M. R. Lees,G. Balakrishnan###
(1257934, 1257935)
 Cr1/3NbS2 is a transition metal dichalcogenide that has been ofsignificant interest due to its ability to host a magnetic chiral solitonlattice.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbS2
###Giant topological and planar Hall effect in Cr$_{1/3}$NbS$_{2}$|D. A. Mayoh,J. Bouaziz,A. E. Hall,J. B. Staunton,M. R. Lees,G. Balakrishnan###
(1257938, 1257940)
 Cr1/3NbS2 is a transition metal dichalcogenide that has been ofsignificant interest due to its ability to host a magnetic chiral solitonlattice.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr1
###Giant topological and planar Hall effect in Cr$_{1/3}$NbS$_{2}$|D. A. Mayoh,J. Bouaziz,A. E. Hall,J. B. Staunton,M. R. Lees,G. Balakrishnan###
(1258069, 1258070)
 We show thatthe presence of a giant planar Hall effect can be attributed to a tiltedsoliton lattice in Cr1/3NbS2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbS2
###Giant topological and planar Hall effect in Cr$_{1/3}$NbS$_{2}$|D. A. Mayoh,J. Bouaziz,A. E. Hall,J. B. Staunton,M. R. Lees,G. Balakrishnan###
(1258073, 1258075)
 We show thatthe presence of a giant planar Hall effect can be attributed to a tiltedsoliton lattice in Cr1/3NbS2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuZn2As2
###Unusual electrical and magnetic properties in layered EuZn2As2|Joanna Blawat,Madalynn Marshall,John Singleton,Erxi Feng,Huibo Cao,Weiwei Xie,Rongying Jin###
(1258202, 1258206)
Unusual electrical and magnetic properties in layered EuZn2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 19, 'K', 3],[209.0, 200, 'K', 4]

Eu
###Unusual electrical and magnetic properties in layered EuZn2As2|Joanna Blawat,Madalynn Marshall,John Singleton,Erxi Feng,Huibo Cao,Weiwei Xie,Rongying Jin###
(1258209, 1258209)
 Eu-based compounds often exhibit unusual magnetism, which is critical fornontrivial topological properties seen in materials such as EuCd2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 19, 'K', 2],[206.0, 200, 'K', 3]

EuCd2As2
###Unusual electrical and magnetic properties in layered EuZn2As2|Joanna Blawat,Madalynn Marshall,John Singleton,Erxi Feng,Huibo Cao,Weiwei Xie,Rongying Jin###
(1258249, 1258253)
 Eu-based compounds often exhibit unusual magnetism, which is critical fornontrivial topological properties seen in materials such as EuCd2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 19, 'K', 2],[162.0, 200, 'K', 3]

EuZn2As2
###Unusual electrical and magnetic properties in layered EuZn2As2|Joanna Blawat,Madalynn Marshall,John Singleton,Erxi Feng,Huibo Cao,Weiwei Xie,Rongying Jin###
(1258273, 1258277)
 Weinvestigate the structure and physical properties of EuZn2As2 throughmeasurements of the electrical resistivity, Hall effect, magnetization, andneutron diffraction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 19, 'K', 1],[138.0, 200, 'K', 2]

EuZn2As2
###Unusual electrical and magnetic properties in layered EuZn2As2|Joanna Blawat,Madalynn Marshall,John Singleton,Erxi Feng,Huibo Cao,Weiwei Xie,Rongying Jin###
(1258317, 1258321)
 Our data show that EuZn2As2 orders antiferromagneticallywith an A-type spin configuration below T<missing VAR>N  19 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 19, 'K', 0],[94.0, 200, 'K', 1]

N
###Unusual electrical and magnetic properties in layered EuZn2As2|Joanna Blawat,Madalynn Marshall,John Singleton,Erxi Feng,Huibo Cao,Weiwei Xie,Rongying Jin###
(1258343, 1258343)
 Our data show that EuZn2As2 orders antiferromagneticallywith an A-type spin configuration below T<missing VAR>N  19 K.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 19, 'K', 0],[72.0, 200, 'K', 1]

N
###Unusual electrical and magnetic properties in layered EuZn2As2|Joanna Blawat,Madalynn Marshall,John Singleton,Erxi Feng,Huibo Cao,Weiwei Xie,Rongying Jin###
(1258371, 1258371)
 Surprisingly, there isstrong evidence for dominant ferromagnetic fluctuations above T<missing VAR>N, as reflectedby positive Curie-Weiss temperature and extremely large negativemagnetoresistance (MR) between T<missing VAR>N and Tfl guillemotright 200 K.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 19, 'K', 1],[44.0, 200, 'K', 0]

N
###Unusual electrical and magnetic properties in layered EuZn2As2|Joanna Blawat,Madalynn Marshall,John Singleton,Erxi Feng,Huibo Cao,Weiwei Xie,Rongying Jin###
(1258408, 1258408)
 Surprisingly, there isstrong evidence for dominant ferromagnetic fluctuations above T<missing VAR>N, as reflectedby positive Curie-Weiss temperature and extremely large negativemagnetoresistance (MR) between T<missing VAR>N and Tfl guillemotright 200 K.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 19, 'K', 1],[7.0, 200, 'K', 0]

EuCd2As2
###Unusual electrical and magnetic properties in layered EuZn2As2|Joanna Blawat,Madalynn Marshall,John Singleton,Erxi Feng,Huibo Cao,Weiwei Xie,Rongying Jin###
(1258479, 1258483)
Compared to EuCd2As2, the doubled T<missing VAR>N and Tfl make EuZn2As2 a better platformfor exploring topological properties in both magnetic fluctuation (T<missing VAR>N < T<missing VAR> <Tfl) and ordered (T<missing VAR> < T<missing VAR>N) regimes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 19, 'K', 3],[64.0, 200, 'K', 2]

N
###Unusual electrical and magnetic properties in layered EuZn2As2|Joanna Blawat,Madalynn Marshall,John Singleton,Erxi Feng,Huibo Cao,Weiwei Xie,Rongying Jin###
(1258491, 1258491)
Compared to EuCd2As2, the doubled T<missing VAR>N and Tfl make EuZn2As2 a better platformfor exploring topological properties in both magnetic fluctuation (T<missing VAR>N < T<missing VAR> <Tfl) and ordered (T<missing VAR> < T<missing VAR>N) regimes.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 19, 'K', 3],[76.0, 200, 'K', 2]

EuZn2As2
###Unusual electrical and magnetic properties in layered EuZn2As2|Joanna Blawat,Madalynn Marshall,John Singleton,Erxi Feng,Huibo Cao,Weiwei Xie,Rongying Jin###
(1258499, 1258503)
Compared to EuCd2As2, the doubled T<missing VAR>N and Tfl make EuZn2As2 a better platformfor exploring topological properties in both magnetic fluctuation (T<missing VAR>N < T<missing VAR> <Tfl) and ordered (T<missing VAR> < T<missing VAR>N) regimes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 19, 'K', 3],[84.0, 200, 'K', 2]

N
###Unusual electrical and magnetic properties in layered EuZn2As2|Joanna Blawat,Madalynn Marshall,John Singleton,Erxi Feng,Huibo Cao,Weiwei Xie,Rongying Jin###
(1258530, 1258530)
Compared to EuCd2As2, the doubled T<missing VAR>N and Tfl make EuZn2As2 a better platformfor exploring topological properties in both magnetic fluctuation (T<missing VAR>N < T<missing VAR> <Tfl) and ordered (T<missing VAR> < T<missing VAR>N) regimes.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[185.0, 19, 'K', 3],[115.0, 200, 'K', 2]

N
###Unusual electrical and magnetic properties in layered EuZn2As2|Joanna Blawat,Madalynn Marshall,John Singleton,Erxi Feng,Huibo Cao,Weiwei Xie,Rongying Jin###
(1258552, 1258552)
Compared to EuCd2As2, the doubled T<missing VAR>N and Tfl make EuZn2As2 a better platformfor exploring topological properties in both magnetic fluctuation (T<missing VAR>N < T<missing VAR> <Tfl) and ordered (T<missing VAR> < T<missing VAR>N) regimes.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[207.0, 19, 'K', 3],[137.0, 200, 'K', 2]

In
###Do cities have a unique magnetic pulse?|Vincent Dumont,Trevor A. Bowen,Roger Roglans,Gregory Dobler,Mohit S. Sharma,Andy Karpf,Stuart D. Bale,Arne Wickenbrock,Elena Zhivun,Tom Kornack,Jonathan S. Wurtele,Dmitry Budker###
(1258715, 1258715)
 In particular, we noticed that Berkeley reaches anear-zero magnetic field activity at night whereas magnetic activity inBrooklyn continues during nighttime.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Do cities have a unique magnetic pulse?|Vincent Dumont,Trevor A. Bowen,Roger Roglans,Gregory Dobler,Mohit S. Sharma,Andy Karpf,Stuart D. Bale,Arne Wickenbrock,Elena Zhivun,Tom Kornack,Jonathan S. Wurtele,Dmitry Budker###
(1258787, 1258787)
 We also present auxiliary measurementsacquired using magnetoresistive vector magnetometers (VMR), with sensitivity of300 pT/sqrtmathrmHz, and demonstrate how cross-correlation, andfrequency-domain analysis, combined with data filtering can be used to extracturban magnetometry signals and study local anthropogenic activities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Quantum sensing on magnetic field inspired by Avian compass|Wei-Yin Chiang,Yuan-Chung Cheng,Min-Hsiu Hsieh###
(1258965, 1258965)
 Magnetic measurement can be performed by various sensors, such as SQ<missing VAR>UID<missing VAR> andGiant Magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

UI
###Quantum sensing on magnetic field inspired by Avian compass|Wei-Yin Chiang,Yuan-Chung Cheng,Min-Hsiu Hsieh###
(1258967, 1258968)
 Magnetic measurement can be performed by various sensors, such as SQ<missing VAR>UID<missing VAR> andGiant Magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Quantum sensing on magnetic field inspired by Avian compass|Wei-Yin Chiang,Yuan-Chung Cheng,Min-Hsiu Hsieh###
(1259042, 1259042)
 The model of biological magnetic sensing in avianproposes a radical pair response to the external field on the FL<missing VAR>Y results inregulating animal behaviour.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Y
###Quantum sensing on magnetic field inspired by Avian compass|Wei-Yin Chiang,Yuan-Chung Cheng,Min-Hsiu Hsieh###
(1259044, 1259044)
 The model of biological magnetic sensing in avianproposes a radical pair response to the external field on the FL<missing VAR>Y results inregulating animal behaviour.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Emergence of insulating ferrimagnetism and perpendicular magnetic anisotropy in 3d-5d perovskite oxide composite films for insulator spintronic|Zeliang Ren,Bin Lao,Xuan Zheng,Lei Liao,Zengxing Lu,Sheng Li,Yongjie Yang,Bingshan Cao,Lijie Wen,Kenan Zhao,Lifen Wang,Xuedong Bai,Xianfeng Hao,Zhaoliang Liao,Zhiming Wang,Run-Wei Li###
(1259336, 1259336)
 Magnetic insulators with strong perpendicular magnetic anisotropy (PM<missing VAR>A) playa key role in exploring pure spin current phenomena and developingultralow-dissipation spintronic devices, thereby it is highly desirable todevelop new material platforms.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 3, 'd', 1]

La2
###Emergence of insulating ferrimagnetism and perpendicular magnetic anisotropy in 3d-5d perovskite oxide composite films for insulator spintronic|Zeliang Ren,Bin Lao,Xuan Zheng,Lei Liao,Zengxing Lu,Sheng Li,Yongjie Yang,Bingshan Cao,Lijie Wen,Kenan Zhao,Lifen Wang,Xuedong Bai,Xianfeng Hao,Zhaoliang Liao,Zhiming Wang,Run-Wei Li###
(1259411, 1259412)
 Here we report epitaxial growth ofLa2/3Sr1/3MnO3 (LSMO)-SrIrO3 (SIO) composite oxide films (LSMIO) with differentcrystalline orientations fabricated by sequential two-target ablation processusing pulsed laser deposition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 3, 'd', 2]

Sr1
###Emergence of insulating ferrimagnetism and perpendicular magnetic anisotropy in 3d-5d perovskite oxide composite films for insulator spintronic|Zeliang Ren,Bin Lao,Xuan Zheng,Lei Liao,Zengxing Lu,Sheng Li,Yongjie Yang,Bingshan Cao,Lijie Wen,Kenan Zhao,Lifen Wang,Xuedong Bai,Xianfeng Hao,Zhaoliang Liao,Zhiming Wang,Run-Wei Li###
(1259415, 1259416)
 Here we report epitaxial growth ofLa2/3Sr1/3MnO3 (LSMO)-SrIrO3 (SIO) composite oxide films (LSMIO) with differentcrystalline orientations fabricated by sequential two-target ablation processusing pulsed laser deposition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 3, 'd', 2]

MnO3
###Emergence of insulating ferrimagnetism and perpendicular magnetic anisotropy in 3d-5d perovskite oxide composite films for insulator spintronic|Zeliang Ren,Bin Lao,Xuan Zheng,Lei Liao,Zengxing Lu,Sheng Li,Yongjie Yang,Bingshan Cao,Lijie Wen,Kenan Zhao,Lifen Wang,Xuedong Bai,Xianfeng Hao,Zhaoliang Liao,Zhiming Wang,Run-Wei Li###
(1259419, 1259421)
 Here we report epitaxial growth ofLa2/3Sr1/3MnO3 (LSMO)-SrIrO3 (SIO) composite oxide films (LSMIO) with differentcrystalline orientations fabricated by sequential two-target ablation processusing pulsed laser deposition.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 3, 'd', 2]

O
###Emergence of insulating ferrimagnetism and perpendicular magnetic anisotropy in 3d-5d perovskite oxide composite films for insulator spintronic|Zeliang Ren,Bin Lao,Xuan Zheng,Lei Liao,Zengxing Lu,Sheng Li,Yongjie Yang,Bingshan Cao,Lijie Wen,Kenan Zhao,Lifen Wang,Xuedong Bai,Xianfeng Hao,Zhaoliang Liao,Zhiming Wang,Run-Wei Li###
(1259427, 1259427)
 Here we report epitaxial growth ofLa2/3Sr1/3MnO3 (LSMO)-SrIrO3 (SIO) composite oxide films (LSMIO) with differentcrystalline orientations fabricated by sequential two-target ablation processusing pulsed laser deposition.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 3, 'd', 2]

SrIrO3
###Emergence of insulating ferrimagnetism and perpendicular magnetic anisotropy in 3d-5d perovskite oxide composite films for insulator spintronic|Zeliang Ren,Bin Lao,Xuan Zheng,Lei Liao,Zengxing Lu,Sheng Li,Yongjie Yang,Bingshan Cao,Lijie Wen,Kenan Zhao,Lifen Wang,Xuedong Bai,Xianfeng Hao,Zhaoliang Liao,Zhiming Wang,Run-Wei Li###
(1259430, 1259433)
 Here we report epitaxial growth ofLa2/3Sr1/3MnO3 (LSMO)-SrIrO3 (SIO) composite oxide films (LSMIO) with differentcrystalline orientations fabricated by sequential two-target ablation processusing pulsed laser deposition.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 3, 'd', 2]

(SIO)
###Emergence of insulating ferrimagnetism and perpendicular magnetic anisotropy in 3d-5d perovskite oxide composite films for insulator spintronic|Zeliang Ren,Bin Lao,Xuan Zheng,Lei Liao,Zengxing Lu,Sheng Li,Yongjie Yang,Bingshan Cao,Lijie Wen,Kenan Zhao,Lifen Wang,Xuedong Bai,Xianfeng Hao,Zhaoliang Liao,Zhiming Wang,Run-Wei Li###
(1259435, 1259439)
 Here we report epitaxial growth ofLa2/3Sr1/3MnO3 (LSMO)-SrIrO3 (SIO) composite oxide films (LSMIO) with differentcrystalline orientations fabricated by sequential two-target ablation processusing pulsed laser deposition.
Featurization successful!
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 3, 'd', 2]

O
###Emergence of insulating ferrimagnetism and perpendicular magnetic anisotropy in 3d-5d perovskite oxide composite films for insulator spintronic|Zeliang Ren,Bin Lao,Xuan Zheng,Lei Liao,Zengxing Lu,Sheng Li,Yongjie Yang,Bingshan Cao,Lijie Wen,Kenan Zhao,Lifen Wang,Xuedong Bai,Xianfeng Hao,Zhaoliang Liao,Zhiming Wang,Run-Wei Li###
(1259452, 1259452)
 Here we report epitaxial growth ofLa2/3Sr1/3MnO3 (LSMO)-SrIrO3 (SIO) composite oxide films (LSMIO) with differentcrystalline orientations fabricated by sequential two-target ablation processusing pulsed laser deposition.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 3, 'd', 2]

IO
###Emergence of insulating ferrimagnetism and perpendicular magnetic anisotropy in 3d-5d perovskite oxide composite films for insulator spintronic|Zeliang Ren,Bin Lao,Xuan Zheng,Lei Liao,Zengxing Lu,Sheng Li,Yongjie Yang,Bingshan Cao,Lijie Wen,Kenan Zhao,Lifen Wang,Xuedong Bai,Xianfeng Hao,Zhaoliang Liao,Zhiming Wang,Run-Wei Li###
(1259493, 1259494)
 The LSMIO films exhibit high crystalline qualitywith homogeneous mixture of LSMO and SIO at atomic level.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[192.0, 3, 'd', 3]

O
###Emergence of insulating ferrimagnetism and perpendicular magnetic anisotropy in 3d-5d perovskite oxide composite films for insulator spintronic|Zeliang Ren,Bin Lao,Xuan Zheng,Lei Liao,Zengxing Lu,Sheng Li,Yongjie Yang,Bingshan Cao,Lijie Wen,Kenan Zhao,Lifen Wang,Xuedong Bai,Xianfeng Hao,Zhaoliang Liao,Zhiming Wang,Run-Wei Li###
(1259518, 1259518)
 The LSMIO films exhibit high crystalline qualitywith homogeneous mixture of LSMO and SIO at atomic level.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[217.0, 3, 'd', 3]

SIO
###Emergence of insulating ferrimagnetism and perpendicular magnetic anisotropy in 3d-5d perovskite oxide composite films for insulator spintronic|Zeliang Ren,Bin Lao,Xuan Zheng,Lei Liao,Zengxing Lu,Sheng Li,Yongjie Yang,Bingshan Cao,Lijie Wen,Kenan Zhao,Lifen Wang,Xuedong Bai,Xianfeng Hao,Zhaoliang Liao,Zhiming Wang,Run-Wei Li###
(1259522, 1259524)
 The LSMIO films exhibit high crystalline qualitywith homogeneous mixture of LSMO and SIO at atomic level.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[221.0, 3, 'd', 3]

IO
###Emergence of insulating ferrimagnetism and perpendicular magnetic anisotropy in 3d-5d perovskite oxide composite films for insulator spintronic|Zeliang Ren,Bin Lao,Xuan Zheng,Lei Liao,Zengxing Lu,Sheng Li,Yongjie Yang,Bingshan Cao,Lijie Wen,Kenan Zhao,Lifen Wang,Xuedong Bai,Xianfeng Hao,Zhaoliang Liao,Zhiming Wang,Run-Wei Li###
(1259588, 1259589)
 Moreover, the LSMIO films show strong PM<missing VAR>A.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[287.0, 3, 'd', 5]

P
###Emergence of insulating ferrimagnetism and perpendicular magnetic anisotropy in 3d-5d perovskite oxide composite films for insulator spintronic|Zeliang Ren,Bin Lao,Xuan Zheng,Lei Liao,Zengxing Lu,Sheng Li,Yongjie Yang,Bingshan Cao,Lijie Wen,Kenan Zhao,Lifen Wang,Xuedong Bai,Xianfeng Hao,Zhaoliang Liao,Zhiming Wang,Run-Wei Li###
(1259597, 1259597)
 Moreover, the LSMIO films show strong PM<missing VAR>A.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[296.0, 3, 'd', 5]

IO
###Emergence of insulating ferrimagnetism and perpendicular magnetic anisotropy in 3d-5d perovskite oxide composite films for insulator spintronic|Zeliang Ren,Bin Lao,Xuan Zheng,Lei Liao,Zengxing Lu,Sheng Li,Yongjie Yang,Bingshan Cao,Lijie Wen,Kenan Zhao,Lifen Wang,Xuedong Bai,Xianfeng Hao,Zhaoliang Liao,Zhiming Wang,Run-Wei Li###
(1259629, 1259630)
Through further constructing all perovskite oxide heterostructures of theferrimagnetic insulator LSMIO and a strong spin-orbital coupled SIO layer,pronounced spin Hall magnetoresistance (SMR) and spin Hall-like anomalous Halleffect (SH-AHE) were observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[328.0, 3, 'd', 6]

SIO
###Emergence of insulating ferrimagnetism and perpendicular magnetic anisotropy in 3d-5d perovskite oxide composite films for insulator spintronic|Zeliang Ren,Bin Lao,Xuan Zheng,Lei Liao,Zengxing Lu,Sheng Li,Yongjie Yang,Bingshan Cao,Lijie Wen,Kenan Zhao,Lifen Wang,Xuedong Bai,Xianfeng Hao,Zhaoliang Liao,Zhiming Wang,Run-Wei Li###
(1259644, 1259646)
Through further constructing all perovskite oxide heterostructures of theferrimagnetic insulator LSMIO and a strong spin-orbital coupled SIO layer,pronounced spin Hall magnetoresistance (SMR) and spin Hall-like anomalous Halleffect (SH-AHE) were observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[343.0, 3, 'd', 6]

S
###Emergence of insulating ferrimagnetism and perpendicular magnetic anisotropy in 3d-5d perovskite oxide composite films for insulator spintronic|Zeliang Ren,Bin Lao,Xuan Zheng,Lei Liao,Zengxing Lu,Sheng Li,Yongjie Yang,Bingshan Cao,Lijie Wen,Kenan Zhao,Lifen Wang,Xuedong Bai,Xianfeng Hao,Zhaoliang Liao,Zhiming Wang,Run-Wei Li###
(1259661, 1259661)
Through further constructing all perovskite oxide heterostructures of theferrimagnetic insulator LSMIO and a strong spin-orbital coupled SIO layer,pronounced spin Hall magnetoresistance (SMR) and spin Hall-like anomalous Halleffect (SH-AHE) were observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[360.0, 3, 'd', 6]

SH
###Emergence of insulating ferrimagnetism and perpendicular magnetic anisotropy in 3d-5d perovskite oxide composite films for insulator spintronic|Zeliang Ren,Bin Lao,Xuan Zheng,Lei Liao,Zengxing Lu,Sheng Li,Yongjie Yang,Bingshan Cao,Lijie Wen,Kenan Zhao,Lifen Wang,Xuedong Bai,Xianfeng Hao,Zhaoliang Liao,Zhiming Wang,Run-Wei Li###
(1259682, 1259683)
Through further constructing all perovskite oxide heterostructures of theferrimagnetic insulator LSMIO and a strong spin-orbital coupled SIO layer,pronounced spin Hall magnetoresistance (SMR) and spin Hall-like anomalous Halleffect (SH-AHE) were observed.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[381.0, 3, 'd', 6]

H
###Emergence of insulating ferrimagnetism and perpendicular magnetic anisotropy in 3d-5d perovskite oxide composite films for insulator spintronic|Zeliang Ren,Bin Lao,Xuan Zheng,Lei Liao,Zengxing Lu,Sheng Li,Yongjie Yang,Bingshan Cao,Lijie Wen,Kenan Zhao,Lifen Wang,Xuedong Bai,Xianfeng Hao,Zhaoliang Liao,Zhiming Wang,Run-Wei Li###
(1259686, 1259686)
Through further constructing all perovskite oxide heterostructures of theferrimagnetic insulator LSMIO and a strong spin-orbital coupled SIO layer,pronounced spin Hall magnetoresistance (SMR) and spin Hall-like anomalous Halleffect (SH-AHE) were observed.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[385.0, 3, 'd', 6]

IO
###Emergence of insulating ferrimagnetism and perpendicular magnetic anisotropy in 3d-5d perovskite oxide composite films for insulator spintronic|Zeliang Ren,Bin Lao,Xuan Zheng,Lei Liao,Zengxing Lu,Sheng Li,Yongjie Yang,Bingshan Cao,Lijie Wen,Kenan Zhao,Lifen Wang,Xuedong Bai,Xianfeng Hao,Zhaoliang Liao,Zhiming Wang,Run-Wei Li###
(1259719, 1259720)
 These results illustrate the potentialapplication of the ferrimagnetic insulator LSMIO in developing all-oxideultralow-dissipation spintronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[418.0, 3, 'd', 7]

In
###Weak localization on moiré superlattice in twisted double bilayer graphene|Masaki Kashiwagi,Toshihiro Taen,Kazuhito Uchida,Kenji Watanabe,Takashi Taniguchi,Toshihito Osada###
(1259851, 1259851)
 In this work,negative magnetoresistance owing to weak localization (WL) was investigated intwisted double bilayer graphene (TDBG) as a function of the twist angle.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Weak localization on moiré superlattice in twisted double bilayer graphene|Masaki Kashiwagi,Toshihiro Taen,Kazuhito Uchida,Kenji Watanabe,Takashi Taniguchi,Toshihito Osada###
(1259872, 1259872)
 In this work,negative magnetoresistance owing to weak localization (WL) was investigated intwisted double bilayer graphene (TDBG) as a function of the twist angle.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Weak localization on moiré superlattice in twisted double bilayer graphene|Masaki Kashiwagi,Toshihiro Taen,Kazuhito Uchida,Kenji Watanabe,Takashi Taniguchi,Toshihito Osada###
(1259894, 1259894)
 In this work,negative magnetoresistance owing to weak localization (WL) was investigated intwisted double bilayer graphene (TDBG) as a function of the twist angle.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Weak localization on moiré superlattice in twisted double bilayer graphene|Masaki Kashiwagi,Toshihiro Taen,Kazuhito Uchida,Kenji Watanabe,Takashi Taniguchi,Toshihito Osada###
(1259946, 1259946)
 Theratio of the intervalley scattering time to the intravalley scattering time,estimated using the WL<missing VAR> formula for bilayer graphene, tended to decrease as thetwist angle increased.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Weak localization on moiré superlattice in twisted double bilayer graphene|Masaki Kashiwagi,Toshihiro Taen,Kazuhito Uchida,Kenji Watanabe,Takashi Taniguchi,Toshihito Osada###
(1260028, 1260028)
 This feature is qualitatively explained by theenhancement of intervalley scattering due to the reduction of the intervalleydistance in the moire<missing VAR> Brillouin zone (BZ) of the TDBG<missing VAR>.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Weak localization on moiré superlattice in twisted double bilayer graphene|Masaki Kashiwagi,Toshihiro Taen,Kazuhito Uchida,Kenji Watanabe,Takashi Taniguchi,Toshihito Osada###
(1260038, 1260038)
 This feature is qualitatively explained by theenhancement of intervalley scattering due to the reduction of the intervalleydistance in the moire<missing VAR> Brillouin zone (BZ) of the TDBG<missing VAR>.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Weak localization on moiré superlattice in twisted double bilayer graphene|Masaki Kashiwagi,Toshihiro Taen,Kazuhito Uchida,Kenji Watanabe,Takashi Taniguchi,Toshihito Osada###
(1260048, 1260048)
 This indicates that WL<missing VAR>in the TDBG<missing VAR> occurs for the moire<missing VAR> superlattice with the reconstructed BZ<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Weak localization on moiré superlattice in twisted double bilayer graphene|Masaki Kashiwagi,Toshihiro Taen,Kazuhito Uchida,Kenji Watanabe,Takashi Taniguchi,Toshihito Osada###
(1260058, 1260058)
 This indicates that WL<missing VAR>in the TDBG<missing VAR> occurs for the moire<missing VAR> superlattice with the reconstructed BZ<missing VAR>.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Weak localization on moiré superlattice in twisted double bilayer graphene|Masaki Kashiwagi,Toshihiro Taen,Kazuhito Uchida,Kenji Watanabe,Takashi Taniguchi,Toshihito Osada###
(1260078, 1260078)
 This indicates that WL<missing VAR>in the TDBG<missing VAR> occurs for the moire<missing VAR> superlattice with the reconstructed BZ<missing VAR>.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NdSb
###Complex electronic structure evolution of NdSb across the magnetic transition|Anup Pradhan Sakhya,Baokai Wang,Firoza Kabir,Cheng-Yi Huang,M. Mofazzel Hosen,Bahadur Singh,Sabin Regmi,Gyanendra Dhakal,Klauss Dimitri,Milo Sprague,Robert Smith,Eric D. Bauer,Filip Ronning,Arun Bansil,Madhab Neupane###
(1260100, 1260101)
Complex electronic structure evolution of NdSb across the magnetic transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[285.0, 5, 'p', 4]

NdSb
###Complex electronic structure evolution of NdSb across the magnetic transition|Anup Pradhan Sakhya,Baokai Wang,Firoza Kabir,Cheng-Yi Huang,M. Mofazzel Hosen,Bahadur Singh,Sabin Regmi,Gyanendra Dhakal,Klauss Dimitri,Milo Sprague,Robert Smith,Eric D. Bauer,Filip Ronning,Arun Bansil,Madhab Neupane###
(1260248, 1260249)
 Here, by usinghigh-resolution angle-resolved photoemission spectroscopy complemented byfirst-principles density functional-theory based modeling, we examine theevolution of the electronic structure of the candidate REM Dirac semimetal NdSbacross the magnetic transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 5, 'p', 2]

Nd
###Complex electronic structure evolution of NdSb across the magnetic transition|Anup Pradhan Sakhya,Baokai Wang,Firoza Kabir,Cheng-Yi Huang,M. Mofazzel Hosen,Bahadur Singh,Sabin Regmi,Gyanendra Dhakal,Klauss Dimitri,Milo Sprague,Robert Smith,Eric D. Bauer,Filip Ronning,Arun Bansil,Madhab Neupane###
(1260357, 1260357)
 This dramatic reconstruction of the itinerant bands around the zonecenter is shown to be driven by the magnetic transition Specifically,, the Nd5d<missing VAR> electron band backfolds at the Gamma point and hybridizes with the Sb 5phole bands in the antiferromagnetic phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 5, 'p', 0]

Sb
###Complex electronic structure evolution of NdSb across the magnetic transition|Anup Pradhan Sakhya,Baokai Wang,Firoza Kabir,Cheng-Yi Huang,M. Mofazzel Hosen,Bahadur Singh,Sabin Regmi,Gyanendra Dhakal,Klauss Dimitri,Milo Sprague,Robert Smith,Eric D. Bauer,Filip Ronning,Arun Bansil,Madhab Neupane###
(1260385, 1260385)
 This dramatic reconstruction of the itinerant bands around the zonecenter is shown to be driven by the magnetic transition Specifically,, the Nd5d<missing VAR> electron band backfolds at the Gamma point and hybridizes with the Sb 5phole bands in the antiferromagnetic phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[1.0, 5, 'p', 0]

CeCoSi
###Magnetic field-Temperature Phase Diagram of CeCoSi Constructed by Specific Heat, Magnetoresistivity, and Magnetization Measurements for a Single Crystal|Hiroyuki Hidaka,Shun Yanagiya,Eikai Hayasaka,Yuma Kaneko,Tatsuya Yanagisawa,Hiroshi Tanida,Hiroshi Amitsuka###
(1260461, 1260463)
Magnetic field-Temperature Phase Diagram of CeCoSi Constructed by Specific Heat, Magnetoresistivity, and Magnetization Measurements for a Single Crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 12, 'K', 1],[95.0, 9.4, 'K', 1],[154.0, 14, 'T', 2],[233.0, 13, 'K', 3]

Ce
###Magnetic field-Temperature Phase Diagram of CeCoSi Constructed by Specific Heat, Magnetoresistivity, and Magnetization Measurements for a Single Crystal|Hiroyuki Hidaka,Shun Yanagiya,Eikai Hayasaka,Yuma Kaneko,Tatsuya Yanagisawa,Hiroshi Tanida,Hiroshi Amitsuka###
(1260494, 1260494)
 A Ce-based metallic compound CeCoSi with a tetragonal structure exhibitssuccessive phase transitions the one whose order parameter is unidentified atT<missing VAR>0  12 K and the antiferromagnetic one at T<missing VAR>N  9.4 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 12, 'K', 0],[64.0, 9.4, 'K', 0],[123.0, 14, 'T', 1],[202.0, 13, 'K', 2]

CeCoSi
###Magnetic field-Temperature Phase Diagram of CeCoSi Constructed by Specific Heat, Magnetoresistivity, and Magnetization Measurements for a Single Crystal|Hiroyuki Hidaka,Shun Yanagiya,Eikai Hayasaka,Yuma Kaneko,Tatsuya Yanagisawa,Hiroshi Tanida,Hiroshi Amitsuka###
(1260502, 1260504)
 A Ce-based metallic compound CeCoSi with a tetragonal structure exhibitssuccessive phase transitions the one whose order parameter is unidentified atT<missing VAR>0  12 K and the antiferromagnetic one at T<missing VAR>N  9.4 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 12, 'K', 0],[54.0, 9.4, 'K', 0],[113.0, 14, 'T', 1],[192.0, 13, 'K', 2]

N
###Magnetic field-Temperature Phase Diagram of CeCoSi Constructed by Specific Heat, Magnetoresistivity, and Magnetization Measurements for a Single Crystal|Hiroyuki Hidaka,Shun Yanagiya,Eikai Hayasaka,Yuma Kaneko,Tatsuya Yanagisawa,Hiroshi Tanida,Hiroshi Amitsuka###
(1260556, 1260556)
 A Ce-based metallic compound CeCoSi with a tetragonal structure exhibitssuccessive phase transitions the one whose order parameter is unidentified atT<missing VAR>0  12 K and the antiferromagnetic one at T<missing VAR>N  9.4 K.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 12, 'K', 0],[2.0, 9.4, 'K', 0],[61.0, 14, 'T', 1],[140.0, 13, 'K', 2]

CeCoSi
###Magnetic field-Temperature Phase Diagram of CeCoSi Constructed by Specific Heat, Magnetoresistivity, and Magnetization Measurements for a Single Crystal|Hiroyuki Hidaka,Shun Yanagiya,Eikai Hayasaka,Yuma Kaneko,Tatsuya Yanagisawa,Hiroshi Tanida,Hiroshi Amitsuka###
(1260594, 1260596)
 We performed specificheat, magnetoresistivity (MR), and magnetization measurements for a singlecrystal CeCoSi at low temperatures in magnetic fields B of up to 14 T andconstructed detailed magnetic field--temperature phase diagrams for both B [100] and [001].
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 12, 'K', 1],[36.0, 9.4, 'K', 1],[21.0, 14, 'T', 0],[100.0, 13, 'K', 1]

B
###Magnetic field-Temperature Phase Diagram of CeCoSi Constructed by Specific Heat, Magnetoresistivity, and Magnetization Measurements for a Single Crystal|Hiroyuki Hidaka,Shun Yanagiya,Eikai Hayasaka,Yuma Kaneko,Tatsuya Yanagisawa,Hiroshi Tanida,Hiroshi Amitsuka###
(1260610, 1260610)
 We performed specificheat, magnetoresistivity (MR), and magnetization measurements for a singlecrystal CeCoSi at low temperatures in magnetic fields B of up to 14 T andconstructed detailed magnetic field--temperature phase diagrams for both B [100] and [001].
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 12, 'K', 1],[52.0, 9.4, 'K', 1],[7.0, 14, 'T', 0],[86.0, 13, 'K', 1]

B
###Magnetic field-Temperature Phase Diagram of CeCoSi Constructed by Specific Heat, Magnetoresistivity, and Magnetization Measurements for a Single Crystal|Hiroyuki Hidaka,Shun Yanagiya,Eikai Hayasaka,Yuma Kaneko,Tatsuya Yanagisawa,Hiroshi Tanida,Hiroshi Amitsuka###
(1260641, 1260641)
 We performed specificheat, magnetoresistivity (MR), and magnetization measurements for a singlecrystal CeCoSi at low temperatures in magnetic fields B of up to 14 T andconstructed detailed magnetic field--temperature phase diagrams for both B [100] and [001].
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 12, 'K', 1],[83.0, 9.4, 'K', 1],[24.0, 14, 'T', 0],[55.0, 13, 'K', 1]

B
###Magnetic field-Temperature Phase Diagram of CeCoSi Constructed by Specific Heat, Magnetoresistivity, and Magnetization Measurements for a Single Crystal|Hiroyuki Hidaka,Shun Yanagiya,Eikai Hayasaka,Yuma Kaneko,Tatsuya Yanagisawa,Hiroshi Tanida,Hiroshi Amitsuka###
(1260667, 1260667)
 The longitudinal MR measured for B  [100] shows a signchange from negative to positive across T<missing VAR>0  13 K updated in the presentsample, indicating a clear change in an electronic state.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 12, 'K', 2],[109.0, 9.4, 'K', 2],[50.0, 14, 'T', 1],[29.0, 13, 'K', 0]

In
###Magnetic field-Temperature Phase Diagram of CeCoSi Constructed by Specific Heat, Magnetoresistivity, and Magnetization Measurements for a Single Crystal|Hiroyuki Hidaka,Shun Yanagiya,Eikai Hayasaka,Yuma Kaneko,Tatsuya Yanagisawa,Hiroshi Tanida,Hiroshi Amitsuka###
(1260727, 1260727)
 In addition, theconstructed magnetic phase diagrams for both the field directions have aB-induced region in each ordered state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[184.0, 12, 'K', 3],[169.0, 9.4, 'K', 3],[110.0, 14, 'T', 2],[31.0, 13, 'K', 1]

B
###Magnetic field-Temperature Phase Diagram of CeCoSi Constructed by Specific Heat, Magnetoresistivity, and Magnetization Measurements for a Single Crystal|Hiroyuki Hidaka,Shun Yanagiya,Eikai Hayasaka,Yuma Kaneko,Tatsuya Yanagisawa,Hiroshi Tanida,Hiroshi Amitsuka###
(1260758, 1260758)
 In addition, theconstructed magnetic phase diagrams for both the field directions have aB-induced region in each ordered state.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[215.0, 12, 'K', 3],[200.0, 9.4, 'K', 3],[141.0, 14, 'T', 2],[62.0, 13, 'K', 1]

B
###Magnetic field-Temperature Phase Diagram of CeCoSi Constructed by Specific Heat, Magnetoresistivity, and Magnetization Measurements for a Single Crystal|Hiroyuki Hidaka,Shun Yanagiya,Eikai Hayasaka,Yuma Kaneko,Tatsuya Yanagisawa,Hiroshi Tanida,Hiroshi Amitsuka###
(1260825, 1260825)
 The presence of the newly found regionswould be attributed to a change in the symmetry of the order parameter ordomain alignment by applying B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[282.0, 12, 'K', 4],[267.0, 9.4, 'K', 4],[208.0, 14, 'T', 3],[129.0, 13, 'K', 2]

In
###Large anomalous Hall effect and anisotropic magnetoresistance in intrinsic nanoscale spin-valve-type structure of an antiferromagnet|Dong Gun Oh,Jong Hyuk Kim,Mi Kyung Kim,Ki Won Jeong Hyun Jun Shin,Jae Min Hong,Jin Seok Kim,Kyungsun Moon,Nara Lee,Young Jai Choi###
(1260978, 1260978)
In this work, we demonstrated antiferromagnet-based spintronic functionality onan itinerant Ising antiferromagnet of Ca0.9Sr0.1Co2As2 by integrating nanoscalespin-valve-type structure and investigating anisotropic magnetic propertiesdriven by spin-flips.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 1, 'nm', 1]

Ca0.9Sr0.1Co2As2
###Large anomalous Hall effect and anisotropic magnetoresistance in intrinsic nanoscale spin-valve-type structure of an antiferromagnet|Dong Gun Oh,Jong Hyuk Kim,Mi Kyung Kim,Ki Won Jeong Hyun Jun Shin,Jae Min Hong,Jin Seok Kim,Kyungsun Moon,Nara Lee,Young Jai Choi###
(1261010, 1261017)
In this work, we demonstrated antiferromagnet-based spintronic functionality onan itinerant Ising antiferromagnet of Ca0.9Sr0.1Co2As2 by integrating nanoscalespin-valve-type structure and investigating anisotropic magnetic propertiesdriven by spin-flips.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18,0,0,0,0,0,0,0.4,0,0,0,0,0,0.4,0,0,0,0,0.02,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 1, 'nm', 1]

In
###Large anomalous Hall effect and anisotropic magnetoresistance in intrinsic nanoscale spin-valve-type structure of an antiferromagnet|Dong Gun Oh,Jong Hyuk Kim,Mi Kyung Kim,Ki Won Jeong Hyun Jun Shin,Jae Min Hong,Jin Seok Kim,Kyungsun Moon,Nara Lee,Young Jai Choi###
(1261089, 1261089)
 In the presenceof a rotating magnetic field, a new type of the spin-valve-like operation wasobserved for large anomalous Hall conductivity and anisotropicmagnetoresistance, whose effects are maximized above the spin-flip transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 1, 'nm', 1]

In
###Large anomalous Hall effect and anisotropic magnetoresistance in intrinsic nanoscale spin-valve-type structure of an antiferromagnet|Dong Gun Oh,Jong Hyuk Kim,Mi Kyung Kim,Ki Won Jeong Hyun Jun Shin,Jae Min Hong,Jin Seok Kim,Kyungsun Moon,Nara Lee,Young Jai Choi###
(1261168, 1261168)
In addition, a joint experimental and theoretical study provides an efficienttool to read out various spin states, which scheme can be useful forimplementing extensive spintronic applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 1, 'nm', 2]

F
###Sign-tunable anisotropic magnetoresistance and electrically detectable dual magnetic phases in a helical antiferromagnet|Jong Hyuk Kim,Hyun Jun Shin,Mi Kyung Kim,Jae Min Hong,Ki Won Jeong,Jin Seok Kim,Kyungsun Moon,Nara Lee,Young Jai Choi###
(1261323, 1261323)
 Althoughcollinear antiferromagnets are elemental building blocks of antiferromagnetic(AFM) spintronics, the potential of implementing spintronic functionality innon-collinear antiferromagnets has not been clarified thus far.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Sign-tunable anisotropic magnetoresistance and electrically detectable dual magnetic phases in a helical antiferromagnet|Jong Hyuk Kim,Hyun Jun Shin,Mi Kyung Kim,Jae Min Hong,Ki Won Jeong,Jin Seok Kim,Kyungsun Moon,Nara Lee,Young Jai Choi###
(1261375, 1261375)
 Here, wepropose an AFM<missing VAR> helimagnet of EuCo2As2 as a novel single-phase spintronicmaterial that exhibits a remarkable sign reversal of anisotropicmagnetoresistance (AMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuCo2As2
###Sign-tunable anisotropic magnetoresistance and electrically detectable dual magnetic phases in a helical antiferromagnet|Jong Hyuk Kim,Hyun Jun Shin,Mi Kyung Kim,Jae Min Hong,Ki Won Jeong,Jin Seok Kim,Kyungsun Moon,Nara Lee,Young Jai Choi###
(1261382, 1261386)
 Here, wepropose an AFM<missing VAR> helimagnet of EuCo2As2 as a novel single-phase spintronicmaterial that exhibits a remarkable sign reversal of anisotropicmagnetoresistance (AMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Sign-tunable anisotropic magnetoresistance and electrically detectable dual magnetic phases in a helical antiferromagnet|Jong Hyuk Kim,Hyun Jun Shin,Mi Kyung Kim,Jae Min Hong,Ki Won Jeong,Jin Seok Kim,Kyungsun Moon,Nara Lee,Young Jai Choi###
(1261514, 1261514)
 Further, various AFM<missing VAR> memory states associated with the evolution ofthe spin structure under magnetic fields were identified theoretically, basedon an easy-plane anisotropic spin model.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Nonlinear magnetoconductivity in Weyl and multi-Weyl semimetal in quantizing magnetic field|Sunit Das,Kamal Das,Amit Agarwal###
(1261691, 1261691)
 Here, we investigate thesecond-order nonlinear magnetoconductivity of tilted type-I Weyl and multi-Weylsemimetal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Nonlinear magnetoconductivity in Weyl and multi-Weyl semimetal in quantizing magnetic field|Sunit Das,Kamal Das,Amit Agarwal###
(1261705, 1261705)
 In contrast to the presence of chiral anomaly in the linear responseregime, we show that Weyl semimetal do not host chiral charge pumping in thenonlinear transport regime.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PdGa
###Quantum oscillations and weak anisotropic resistivity in the chiral Fermion semimetal PdGa|Xiang-Yu Zeng,Zheng-Yi Dai,Sheng Xu,Ning-Ning Zhao,Huan Wang,Xiao-Yan Wang,Jun-Fa Lin,Jing Gong,Xiao-Ping Ma,Kun Han,Yi-Ting Wang,Peng Cheng,Kai Liu,Tian-Long Xia###
(1261972, 1261973)
Quantum oscillations and weak anisotropic resistivity in the chiral Fermion semimetal PdGa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PdGa
###Quantum oscillations and weak anisotropic resistivity in the chiral Fermion semimetal PdGa|Xiang-Yu Zeng,Zheng-Yi Dai,Sheng Xu,Ning-Ning Zhao,Huan Wang,Xiao-Yan Wang,Jun-Fa Lin,Jing Gong,Xiao-Ping Ma,Kun Han,Yi-Ting Wang,Peng Cheng,Kai Liu,Tian-Long Xia###
(1262015, 1262016)
 We perform a detailed analysis of the magnetotransport and de Haas-van Alphen(d<missing VAR>HvA) oscillations in crystal PdGa which is predicted to be a typical chiralFermion semimetal from CoSi family holding a large Chern number.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoSi
###Quantum oscillations and weak anisotropic resistivity in the chiral Fermion semimetal PdGa|Xiang-Yu Zeng,Zheng-Yi Dai,Sheng Xu,Ning-Ning Zhao,Huan Wang,Xiao-Yan Wang,Jun-Fa Lin,Jing Gong,Xiao-Ping Ma,Kun Han,Yi-Ting Wang,Peng Cheng,Kai Liu,Tian-Long Xia###
(1262041, 1262042)
 We perform a detailed analysis of the magnetotransport and de Haas-van Alphen(d<missing VAR>HvA) oscillations in crystal PdGa which is predicted to be a typical chiralFermion semimetal from CoSi family holding a large Chern number.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PdGa
###Quantum oscillations and weak anisotropic resistivity in the chiral Fermion semimetal PdGa|Xiang-Yu Zeng,Zheng-Yi Dai,Sheng Xu,Ning-Ning Zhao,Huan Wang,Xiao-Yan Wang,Jun-Fa Lin,Jing Gong,Xiao-Ping Ma,Kun Han,Yi-Ting Wang,Peng Cheng,Kai Liu,Tian-Long Xia###
(1262084, 1262085)
 Theunsaturated quadratic magnetoresistance (MR) and nonlinear Hall resistivityindicate that PdGa is a multi-band system without electron-hole compensation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PdGa
###Quantum oscillations and weak anisotropic resistivity in the chiral Fermion semimetal PdGa|Xiang-Yu Zeng,Zheng-Yi Dai,Sheng Xu,Ning-Ning Zhao,Huan Wang,Xiao-Yan Wang,Jun-Fa Lin,Jing Gong,Xiao-Ping Ma,Kun Han,Yi-Ting Wang,Peng Cheng,Kai Liu,Tian-Long Xia###
(1262115, 1262116)
Angle-dependent resistivity in PdGa shows weak anisotropy with twofold orthreefold symmetry when the magnetic field rotates within the (1bar10) or(111) plane perpendicular to the current.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FF
###Quantum oscillations and weak anisotropic resistivity in the chiral Fermion semimetal PdGa|Xiang-Yu Zeng,Zheng-Yi Dai,Sheng Xu,Ning-Ning Zhao,Huan Wang,Xiao-Yan Wang,Jun-Fa Lin,Jing Gong,Xiao-Ping Ma,Kun Han,Yi-Ting Wang,Peng Cheng,Kai Liu,Tian-Long Xia###
(1262200, 1262201)
 Nine or three frequencies areextracted after the fast Fourier-transform analysis (FFT) of the d<missing VAR>HvAoscillations with B//[001] or B//[011], respectively, which is confirmed to beconsistent with the Fermi surfaces (FSs) obtained from first-principlescalculations with spin-orbit coupling (SOC) considered.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Quantum oscillations and weak anisotropic resistivity in the chiral Fermion semimetal PdGa|Xiang-Yu Zeng,Zheng-Yi Dai,Sheng Xu,Ning-Ning Zhao,Huan Wang,Xiao-Yan Wang,Jun-Fa Lin,Jing Gong,Xiao-Ping Ma,Kun Han,Yi-Ting Wang,Peng Cheng,Kai Liu,Tian-Long Xia###
(1262218, 1262218)
 Nine or three frequencies areextracted after the fast Fourier-transform analysis (FFT) of the d<missing VAR>HvAoscillations with B//[001] or B//[011], respectively, which is confirmed to beconsistent with the Fermi surfaces (FSs) obtained from first-principlescalculations with spin-orbit coupling (SOC) considered.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Quantum oscillations and weak anisotropic resistivity in the chiral Fermion semimetal PdGa|Xiang-Yu Zeng,Zheng-Yi Dai,Sheng Xu,Ning-Ning Zhao,Huan Wang,Xiao-Yan Wang,Jun-Fa Lin,Jing Gong,Xiao-Ping Ma,Kun Han,Yi-Ting Wang,Peng Cheng,Kai Liu,Tian-Long Xia###
(1262227, 1262227)
 Nine or three frequencies areextracted after the fast Fourier-transform analysis (FFT) of the d<missing VAR>HvAoscillations with B//[001] or B//[011], respectively, which is confirmed to beconsistent with the Fermi surfaces (FSs) obtained from first-principlescalculations with spin-orbit coupling (SOC) considered.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Quantum oscillations and weak anisotropic resistivity in the chiral Fermion semimetal PdGa|Xiang-Yu Zeng,Zheng-Yi Dai,Sheng Xu,Ning-Ning Zhao,Huan Wang,Xiao-Yan Wang,Jun-Fa Lin,Jing Gong,Xiao-Ping Ma,Kun Han,Yi-Ting Wang,Peng Cheng,Kai Liu,Tian-Long Xia###
(1262260, 1262260)
 Nine or three frequencies areextracted after the fast Fourier-transform analysis (FFT) of the d<missing VAR>HvAoscillations with B//[001] or B//[011], respectively, which is confirmed to beconsistent with the Fermi surfaces (FSs) obtained from first-principlescalculations with spin-orbit coupling (SOC) considered.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(SOC)
###Quantum oscillations and weak anisotropic resistivity in the chiral Fermion semimetal PdGa|Xiang-Yu Zeng,Zheng-Yi Dai,Sheng Xu,Ning-Ning Zhao,Huan Wang,Xiao-Yan Wang,Jun-Fa Lin,Jing Gong,Xiao-Ping Ma,Kun Han,Yi-Ting Wang,Peng Cheng,Kai Liu,Tian-Long Xia###
(1262283, 1262287)
 Nine or three frequencies areextracted after the fast Fourier-transform analysis (FFT) of the d<missing VAR>HvAoscillations with B//[001] or B//[011], respectively, which is confirmed to beconsistent with the Fermi surfaces (FSs) obtained from first-principlescalculations with spin-orbit coupling (SOC) considered.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###MRAM-based Analog Sigmoid Function for In-memory Computing|Md Hasibul Amin,Mohammed Elbtity,Mohammadreza Mohammadi,Ramtin Zand###
(1262696, 1262696)
MRAM<missing VAR>-based Analog Sigmoid Function for In-memory Computing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[255.0, 12, 'x', 4],[259.0, 13.3, 'x', 4]

SO
###MRAM-based Analog Sigmoid Function for In-memory Computing|Md Hasibul Amin,Mohammed Elbtity,Mohammadreza Mohammadi,Ramtin Zand###
(1262744, 1262745)
 We propose an analog implementation of the transcendental activation functionleveraging two spin-orbit torque magnetoresistive random-access memory(SOT-MRAM) devices and a CM<missing VAR>OS inverter.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[206.0, 12, 'x', 3],[210.0, 13.3, 'x', 3]

C
###MRAM-based Analog Sigmoid Function for In-memory Computing|Md Hasibul Amin,Mohammed Elbtity,Mohammadreza Mohammadi,Ramtin Zand###
(1262760, 1262760)
 We propose an analog implementation of the transcendental activation functionleveraging two spin-orbit torque magnetoresistive random-access memory(SOT-MRAM) devices and a CM<missing VAR>OS inverter.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[191.0, 12, 'x', 3],[195.0, 13.3, 'x', 3]

OS
###MRAM-based Analog Sigmoid Function for In-memory Computing|Md Hasibul Amin,Mohammed Elbtity,Mohammadreza Mohammadi,Ramtin Zand###
(1262762, 1262763)
 We propose an analog implementation of the transcendental activation functionleveraging two spin-orbit torque magnetoresistive random-access memory(SOT-MRAM) devices and a CM<missing VAR>OS inverter.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 12, 'x', 3],[192.0, 13.3, 'x', 3]

I
###MRAM-based Analog Sigmoid Function for In-memory Computing|Md Hasibul Amin,Mohammed Elbtity,Mohammadreza Mohammadi,Ramtin Zand###
(1262895, 1262895)
 The architecture-levelanalyses show that a fully-analog in-memory computing (IM<missing VAR>C) circuit that useour SOT-MRAM<missing VAR> neuron along with an SOT-MRAM<missing VAR> based crossbar can achieve more than1.1x<missing VAR>, 12x, and 13.3x reduction in power, latency, and energy, respectively,compared to a mixed-signal implementation with analog memristive crossbars anddigital neurons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 12, 'x', 0],[60.0, 13.3, 'x', 0]

C
###MRAM-based Analog Sigmoid Function for In-memory Computing|Md Hasibul Amin,Mohammed Elbtity,Mohammadreza Mohammadi,Ramtin Zand###
(1262897, 1262897)
 The architecture-levelanalyses show that a fully-analog in-memory computing (IM<missing VAR>C) circuit that useour SOT-MRAM<missing VAR> neuron along with an SOT-MRAM<missing VAR> based crossbar can achieve more than1.1x<missing VAR>, 12x, and 13.3x reduction in power, latency, and energy, respectively,compared to a mixed-signal implementation with analog memristive crossbars anddigital neurons.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 12, 'x', 0],[58.0, 13.3, 'x', 0]

SO
###MRAM-based Analog Sigmoid Function for In-memory Computing|Md Hasibul Amin,Mohammed Elbtity,Mohammadreza Mohammadi,Ramtin Zand###
(1262909, 1262910)
 The architecture-levelanalyses show that a fully-analog in-memory computing (IM<missing VAR>C) circuit that useour SOT-MRAM<missing VAR> neuron along with an SOT-MRAM<missing VAR> based crossbar can achieve more than1.1x<missing VAR>, 12x, and 13.3x reduction in power, latency, and energy, respectively,compared to a mixed-signal implementation with analog memristive crossbars anddigital neurons.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 12, 'x', 0],[45.0, 13.3, 'x', 0]

SO
###MRAM-based Analog Sigmoid Function for In-memory Computing|Md Hasibul Amin,Mohammed Elbtity,Mohammadreza Mohammadi,Ramtin Zand###
(1262926, 1262927)
 The architecture-levelanalyses show that a fully-analog in-memory computing (IM<missing VAR>C) circuit that useour SOT-MRAM<missing VAR> neuron along with an SOT-MRAM<missing VAR> based crossbar can achieve more than1.1x<missing VAR>, 12x, and 13.3x reduction in power, latency, and energy, respectively,compared to a mixed-signal implementation with analog memristive crossbars anddigital neurons.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 12, 'x', 0],[28.0, 13.3, 'x', 0]

P
###MRAM-based Analog Sigmoid Function for In-memory Computing|Md Hasibul Amin,Mohammed Elbtity,Mohammadreza Mohammadi,Ramtin Zand###
(1263063, 1263063)
 Finally, through cross-layer analyses, we provide a guide onhow varying the device-level parameters in our neuron can affect the accuracyof multilayer perceptron (MLP) for M<missing VAR>NIST<missing VAR> classification.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 12, 'x', 1],[108.0, 13.3, 'x', 1]

NIS
###MRAM-based Analog Sigmoid Function for In-memory Computing|Md Hasibul Amin,Mohammed Elbtity,Mohammadreza Mohammadi,Ramtin Zand###
(1263069, 1263071)
 Finally, through cross-layer analyses, we provide a guide onhow varying the device-level parameters in our neuron can affect the accuracyof multilayer perceptron (MLP) for M<missing VAR>NIST<missing VAR> classification.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 12, 'x', 1],[114.0, 13.3, 'x', 1]

N
###NAND-SPIN-Based Processing-in-MRAM Architecture for Convolutional Neural Network Acceleration|Yinglin Zhao,Jianlei Yang,Bing Li,Xingzhou Cheng,Xucheng Ye,Xueyan Wang,Xiaotao Jia,Zhaohao Wang,Youguang Zhang,Weisheng Zhao###
(1263085, 1263085)
NAND<missing VAR>-SPIN-Based Processing-in-MRAM<missing VAR> Architecture for Convolutional Neural Network Acceleration.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###NAND-SPIN-Based Processing-in-MRAM Architecture for Convolutional Neural Network Acceleration|Yinglin Zhao,Jianlei Yang,Bing Li,Xingzhou Cheng,Xucheng Ye,Xueyan Wang,Xiaotao Jia,Zhaohao Wang,Youguang Zhang,Weisheng Zhao###
(1263087, 1263087)
NAND<missing VAR>-SPIN-Based Processing-in-MRAM<missing VAR> Architecture for Convolutional Neural Network Acceleration.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SPIN
###NAND-SPIN-Based Processing-in-MRAM Architecture for Convolutional Neural Network Acceleration|Yinglin Zhao,Jianlei Yang,Bing Li,Xingzhou Cheng,Xucheng Ye,Xueyan Wang,Xiaotao Jia,Zhaohao Wang,Youguang Zhang,Weisheng Zhao###
(1263090, 1263093)
NAND<missing VAR>-SPIN-Based Processing-in-MRAM<missing VAR> Architecture for Convolutional Neural Network Acceleration.
Featurization terminated normally.
0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PI
###NAND-SPIN-Based Processing-in-MRAM Architecture for Convolutional Neural Network Acceleration|Yinglin Zhao,Jianlei Yang,Bing Li,Xingzhou Cheng,Xucheng Ye,Xueyan Wang,Xiaotao Jia,Zhaohao Wang,Youguang Zhang,Weisheng Zhao###
(1263191, 1263192)
 To resolve those problems, processing-in-memory(PIM) architectures are developed to bring computation logic in or near memoryto alleviate the bandwidth limitations during data transmission.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###NAND-SPIN-Based Processing-in-MRAM Architecture for Convolutional Neural Network Acceleration|Yinglin Zhao,Jianlei Yang,Bing Li,Xingzhou Cheng,Xucheng Ye,Xueyan Wang,Xiaotao Jia,Zhaohao Wang,Youguang Zhang,Weisheng Zhao###
(1263236, 1263236)
 NAND<missing VAR>-likespintronics memory (NAND<missing VAR>-SPIN) is one kind of promising magnetoresistiverandom-access memory (MRAM) with low write energy and high integration density,and it can be employed to perform efficient in-memory computation operations.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###NAND-SPIN-Based Processing-in-MRAM Architecture for Convolutional Neural Network Acceleration|Yinglin Zhao,Jianlei Yang,Bing Li,Xingzhou Cheng,Xucheng Ye,Xueyan Wang,Xiaotao Jia,Zhaohao Wang,Youguang Zhang,Weisheng Zhao###
(1263238, 1263238)
 NAND<missing VAR>-likespintronics memory (NAND<missing VAR>-SPIN) is one kind of promising magnetoresistiverandom-access memory (MRAM) with low write energy and high integration density,and it can be employed to perform efficient in-memory computation operations.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###NAND-SPIN-Based Processing-in-MRAM Architecture for Convolutional Neural Network Acceleration|Yinglin Zhao,Jianlei Yang,Bing Li,Xingzhou Cheng,Xucheng Ye,Xueyan Wang,Xiaotao Jia,Zhaohao Wang,Youguang Zhang,Weisheng Zhao###
(1263249, 1263249)
 NAND<missing VAR>-likespintronics memory (NAND<missing VAR>-SPIN) is one kind of promising magnetoresistiverandom-access memory (MRAM) with low write energy and high integration density,and it can be employed to perform efficient in-memory computation operations.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###NAND-SPIN-Based Processing-in-MRAM Architecture for Convolutional Neural Network Acceleration|Yinglin Zhao,Jianlei Yang,Bing Li,Xingzhou Cheng,Xucheng Ye,Xueyan Wang,Xiaotao Jia,Zhaohao Wang,Youguang Zhang,Weisheng Zhao###
(1263251, 1263251)
 NAND<missing VAR>-likespintronics memory (NAND<missing VAR>-SPIN) is one kind of promising magnetoresistiverandom-access memory (MRAM) with low write energy and high integration density,and it can be employed to perform efficient in-memory computation operations.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###NAND-SPIN-Based Processing-in-MRAM Architecture for Convolutional Neural Network Acceleration|Yinglin Zhao,Jianlei Yang,Bing Li,Xingzhou Cheng,Xucheng Ye,Xueyan Wang,Xiaotao Jia,Zhaohao Wang,Youguang Zhang,Weisheng Zhao###
(1263257, 1263257)
 NAND<missing VAR>-likespintronics memory (NAND<missing VAR>-SPIN) is one kind of promising magnetoresistiverandom-access memory (MRAM) with low write energy and high integration density,and it can be employed to perform efficient in-memory computation operations.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###NAND-SPIN-Based Processing-in-MRAM Architecture for Convolutional Neural Network Acceleration|Yinglin Zhao,Jianlei Yang,Bing Li,Xingzhou Cheng,Xucheng Ye,Xueyan Wang,Xiaotao Jia,Zhaohao Wang,Youguang Zhang,Weisheng Zhao###
(1263330, 1263330)
In this work, we propose a NAND<missing VAR>-SPIN-based PIM<missing VAR> architecture for efficientconvolutional neural network (CNN) acceleration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###NAND-SPIN-Based Processing-in-MRAM Architecture for Convolutional Neural Network Acceleration|Yinglin Zhao,Jianlei Yang,Bing Li,Xingzhou Cheng,Xucheng Ye,Xueyan Wang,Xiaotao Jia,Zhaohao Wang,Youguang Zhang,Weisheng Zhao###
(1263343, 1263343)
In this work, we propose a NAND<missing VAR>-SPIN-based PIM<missing VAR> architecture for efficientconvolutional neural network (CNN) acceleration.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###NAND-SPIN-Based Processing-in-MRAM Architecture for Convolutional Neural Network Acceleration|Yinglin Zhao,Jianlei Yang,Bing Li,Xingzhou Cheng,Xucheng Ye,Xueyan Wang,Xiaotao Jia,Zhaohao Wang,Youguang Zhang,Weisheng Zhao###
(1263345, 1263345)
In this work, we propose a NAND<missing VAR>-SPIN-based PIM<missing VAR> architecture for efficientconvolutional neural network (CNN) acceleration.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SPIN
###NAND-SPIN-Based Processing-in-MRAM Architecture for Convolutional Neural Network Acceleration|Yinglin Zhao,Jianlei Yang,Bing Li,Xingzhou Cheng,Xucheng Ye,Xueyan Wang,Xiaotao Jia,Zhaohao Wang,Youguang Zhang,Weisheng Zhao###
(1263348, 1263351)
In this work, we propose a NAND<missing VAR>-SPIN-based PIM<missing VAR> architecture for efficientconvolutional neural network (CNN) acceleration.
Featurization terminated normally.
0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PI
###NAND-SPIN-Based Processing-in-MRAM Architecture for Convolutional Neural Network Acceleration|Yinglin Zhao,Jianlei Yang,Bing Li,Xingzhou Cheng,Xucheng Ye,Xueyan Wang,Xiaotao Jia,Zhaohao Wang,Youguang Zhang,Weisheng Zhao###
(1263355, 1263356)
In this work, we propose a NAND<missing VAR>-SPIN-based PIM<missing VAR> architecture for efficientconvolutional neural network (CNN) acceleration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(CNN)
###NAND-SPIN-Based Processing-in-MRAM Architecture for Convolutional Neural Network Acceleration|Yinglin Zhao,Jianlei Yang,Bing Li,Xingzhou Cheng,Xucheng Ye,Xueyan Wang,Xiaotao Jia,Zhaohao Wang,Youguang Zhang,Weisheng Zhao###
(1263372, 1263376)
In this work, we propose a NAND<missing VAR>-SPIN-based PIM<missing VAR> architecture for efficientconvolutional neural network (CNN) acceleration.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###NAND-SPIN-Based Processing-in-MRAM Architecture for Convolutional Neural Network Acceleration|Yinglin Zhao,Jianlei Yang,Bing Li,Xingzhou Cheng,Xucheng Ye,Xueyan Wang,Xiaotao Jia,Zhaohao Wang,Youguang Zhang,Weisheng Zhao###
(1263426, 1263426)
Benefiting from the excellent characteristics of NAND<missing VAR>-SPIN and in-memoryprocessing architecture, experimental results show that the proposed approachcan achieve sim2.6times speedup and sim1.4times improvement inenergy efficiency over state-of-the-art PIM<missing VAR> solutions.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###NAND-SPIN-Based Processing-in-MRAM Architecture for Convolutional Neural Network Acceleration|Yinglin Zhao,Jianlei Yang,Bing Li,Xingzhou Cheng,Xucheng Ye,Xueyan Wang,Xiaotao Jia,Zhaohao Wang,Youguang Zhang,Weisheng Zhao###
(1263428, 1263428)
Benefiting from the excellent characteristics of NAND<missing VAR>-SPIN and in-memoryprocessing architecture, experimental results show that the proposed approachcan achieve sim2.6times speedup and sim1.4times improvement inenergy efficiency over state-of-the-art PIM<missing VAR> solutions.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SPIN
###NAND-SPIN-Based Processing-in-MRAM Architecture for Convolutional Neural Network Acceleration|Yinglin Zhao,Jianlei Yang,Bing Li,Xingzhou Cheng,Xucheng Ye,Xueyan Wang,Xiaotao Jia,Zhaohao Wang,Youguang Zhang,Weisheng Zhao###
(1263431, 1263434)
Benefiting from the excellent characteristics of NAND<missing VAR>-SPIN and in-memoryprocessing architecture, experimental results show that the proposed approachcan achieve sim2.6times speedup and sim1.4times improvement inenergy efficiency over state-of-the-art PIM<missing VAR> solutions.
Featurization terminated normally.
0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PI
###NAND-SPIN-Based Processing-in-MRAM Architecture for Convolutional Neural Network Acceleration|Yinglin Zhao,Jianlei Yang,Bing Li,Xingzhou Cheng,Xucheng Ye,Xueyan Wang,Xiaotao Jia,Zhaohao Wang,Youguang Zhang,Weisheng Zhao###
(1263498, 1263499)
Benefiting from the excellent characteristics of NAND<missing VAR>-SPIN and in-memoryprocessing architecture, experimental results show that the proposed approachcan achieve sim2.6times speedup and sim1.4times improvement inenergy efficiency over state-of-the-art PIM<missing VAR> solutions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Hg
###Finite field transport response of a dilute magnetic topological insulator based Josephson junction|Pankaj Mandal,Nicolai Taufertshöfer,Lukas Lunczer,Martin P. Stehno,Charles Gould,Laurens W. Molenkamp###
(1263614, 1263614)
 We examinea Josephson junction of such a system, based on the dilute magnetic topologicalinsulator (Hg,Mn)Te and the type II superconductor MoRe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Finite field transport response of a dilute magnetic topological insulator based Josephson junction|Pankaj Mandal,Nicolai Taufertshöfer,Lukas Lunczer,Martin P. Stehno,Charles Gould,Laurens W. Molenkamp###
(1263616, 1263616)
 We examinea Josephson junction of such a system, based on the dilute magnetic topologicalinsulator (Hg,Mn)Te and the type II superconductor MoRe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Te
###Finite field transport response of a dilute magnetic topological insulator based Josephson junction|Pankaj Mandal,Nicolai Taufertshöfer,Lukas Lunczer,Martin P. Stehno,Charles Gould,Laurens W. Molenkamp###
(1263618, 1263618)
 We examinea Josephson junction of such a system, based on the dilute magnetic topologicalinsulator (Hg,Mn)Te and the type II superconductor MoRe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Finite field transport response of a dilute magnetic topological insulator based Josephson junction|Pankaj Mandal,Nicolai Taufertshöfer,Lukas Lunczer,Martin P. Stehno,Charles Gould,Laurens W. Molenkamp###
(1263626, 1263627)
 We examinea Josephson junction of such a system, based on the dilute magnetic topologicalinsulator (Hg,Mn)Te and the type II superconductor MoRe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoRe
###Finite field transport response of a dilute magnetic topological insulator based Josephson junction|Pankaj Mandal,Nicolai Taufertshöfer,Lukas Lunczer,Martin P. Stehno,Charles Gould,Laurens W. Molenkamp###
(1263631, 1263632)
 We examinea Josephson junction of such a system, based on the dilute magnetic topologicalinsulator (Hg,Mn)Te and the type II superconductor MoRe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Finite field transport response of a dilute magnetic topological insulator based Josephson junction|Pankaj Mandal,Nicolai Taufertshöfer,Lukas Lunczer,Martin P. Stehno,Charles Gould,Laurens W. Molenkamp###
(1263635, 1263635)
 In the zero and verylow field limit, to the best of our knowledge, the device shows, for the firsttime, induced supercurrent through a magnetically doped semiconductor, in thiscase a topological insulator.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Finite field transport response of a dilute magnetic topological insulator based Josephson junction|Pankaj Mandal,Nicolai Taufertshöfer,Lukas Lunczer,Martin P. Stehno,Charles Gould,Laurens W. Molenkamp###
(1263712, 1263712)
 At higher fields, a rich and hystereticmagnetoresistance is revealed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###In situ transport characterization of magnetic states in Nb/Co superconductor/ferromagnet heterostructures|Olena M. Kapran,Roman Morari,Taras Golod,Evgenii A. Borodianskyi,Vladimir Boian,Andrei Prepelita,Nikolay Klenov,Anatoli S. Sidorenko,Vladimir M. Krasnov###
(1263864, 1263864)
In situ transport characterization of magnetic states in Nb/Co superconductor/ferromagnet heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nb/Co
###In situ transport characterization of magnetic states in Nb/Co superconductor/ferromagnet heterostructures|Olena M. Kapran,Roman Morari,Taras Golod,Evgenii A. Borodianskyi,Vladimir Boian,Andrei Prepelita,Nikolay Klenov,Anatoli S. Sidorenko,Vladimir M. Krasnov###
(1263880, 1263882)
In situ transport characterization of magnetic states in Nb/Co superconductor/ferromagnet heterostructures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

F
###In situ transport characterization of magnetic states in Nb/Co superconductor/ferromagnet heterostructures|Olena M. Kapran,Roman Morari,Taras Golod,Evgenii A. Borodianskyi,Vladimir Boian,Andrei Prepelita,Nikolay Klenov,Anatoli S. Sidorenko,Vladimir M. Krasnov###
(1263915, 1263915)
 Employment of the non-trivial proximity effect in superconductor/ferromagnet(S/F) heterostructures for the creation of novel superconducting devicesrequires accurate control of magnetic states in complex thin-film multilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###In situ transport characterization of magnetic states in Nb/Co superconductor/ferromagnet heterostructures|Olena M. Kapran,Roman Morari,Taras Golod,Evgenii A. Borodianskyi,Vladimir Boian,Andrei Prepelita,Nikolay Klenov,Anatoli S. Sidorenko,Vladimir M. Krasnov###
(1263959, 1263959)
In this work, we study experimentally in-plane transport properties ofmicrostructured Nb/Co multilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nb/Co
###In situ transport characterization of magnetic states in Nb/Co superconductor/ferromagnet heterostructures|Olena M. Kapran,Roman Morari,Taras Golod,Evgenii A. Borodianskyi,Vladimir Boian,Andrei Prepelita,Nikolay Klenov,Anatoli S. Sidorenko,Vladimir M. Krasnov###
(1263985, 1263987)
In this work, we study experimentally in-plane transport properties ofmicrostructured Nb/Co multilayers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

FO
###In situ transport characterization of magnetic states in Nb/Co superconductor/ferromagnet heterostructures|Olena M. Kapran,Roman Morari,Taras Golod,Evgenii A. Borodianskyi,Vladimir Boian,Andrei Prepelita,Nikolay Klenov,Anatoli S. Sidorenko,Vladimir M. Krasnov###
(1264030, 1264031)
 We apply various transport characterizationtechniques, including magnetoresistance, Hall effect, and thefirst-order-reversal-curves (FOR<missing VAR>C) analysis.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###In situ transport characterization of magnetic states in Nb/Co superconductor/ferromagnet heterostructures|Olena M. Kapran,Roman Morari,Taras Golod,Evgenii A. Borodianskyi,Vladimir Boian,Andrei Prepelita,Nikolay Klenov,Anatoli S. Sidorenko,Vladimir M. Krasnov###
(1264033, 1264033)
 We apply various transport characterizationtechniques, including magnetoresistance, Hall effect, and thefirst-order-reversal-curves (FOR<missing VAR>C) analysis.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FO
###In situ transport characterization of magnetic states in Nb/Co superconductor/ferromagnet heterostructures|Olena M. Kapran,Roman Morari,Taras Golod,Evgenii A. Borodianskyi,Vladimir Boian,Andrei Prepelita,Nikolay Klenov,Anatoli S. Sidorenko,Vladimir M. Krasnov###
(1264045, 1264046)
 We demonstrate how FOR<missing VAR>C can beused for detailed in situ characterization of magnetic states.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###In situ transport characterization of magnetic states in Nb/Co superconductor/ferromagnet heterostructures|Olena M. Kapran,Roman Morari,Taras Golod,Evgenii A. Borodianskyi,Vladimir Boian,Andrei Prepelita,Nikolay Klenov,Anatoli S. Sidorenko,Vladimir M. Krasnov###
(1264048, 1264048)
 We demonstrate how FOR<missing VAR>C can beused for detailed in situ characterization of magnetic states.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WSe2
###Spin Manipulation by Giant Valley-Zeeman Spin-Orbit Field in Atom-Thick WSe2|Xinhe Wang,Wei Yang,Wang Yang,Yuan Cao,Xiaoyang Lin,Guodong Wei,Haichang Lu,Peizhe Tang,Weisheng Zhao###
(1264204, 1264206)
Spin Manipulation by Giant Valley-Zeeman Spin-Orbit Field in Atom-Thick WSe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[256.0, 650, 'T', 4]

(SOC)
###Spin Manipulation by Giant Valley-Zeeman Spin-Orbit Field in Atom-Thick WSe2|Xinhe Wang,Wei Yang,Wang Yang,Yuan Cao,Xiaoyang Lin,Guodong Wei,Haichang Lu,Peizhe Tang,Weisheng Zhao###
(1264223, 1264227)
 The phenomenon originating from spin-orbit coupling (SOC) providesenergy-efficient strategies for spin manipulation and device applications.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[235.0, 650, 'T', 3]

(SOF)
###Spin Manipulation by Giant Valley-Zeeman Spin-Orbit Field in Atom-Thick WSe2|Xinhe Wang,Wei Yang,Wang Yang,Yuan Cao,Xiaoyang Lin,Guodong Wei,Haichang Lu,Peizhe Tang,Weisheng Zhao###
(1264285, 1264289)
 Thebroken inversion symmetry interface and resulting electric field induce aRashba-type spin-orbit field (SOF), which has been demonstrated to generatespin-orbit torque for data storage applications.
Featurization successful!
0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 650, 'T', 2]

In
###Spin Manipulation by Giant Valley-Zeeman Spin-Orbit Field in Atom-Thick WSe2|Xinhe Wang,Wei Yang,Wang Yang,Yuan Cao,Xiaoyang Lin,Guodong Wei,Haichang Lu,Peizhe Tang,Weisheng Zhao###
(1264320, 1264320)
 In this study, we found thatspin flipping can be achieved by the valley-Zeeman SOF in monolayer WSe2 atroom temperature, which manifests as a negative magnetoresistance in thevertical spin valve.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 650, 'T', 1]

SOF
###Spin Manipulation by Giant Valley-Zeeman Spin-Orbit Field in Atom-Thick WSe2|Xinhe Wang,Wei Yang,Wang Yang,Yuan Cao,Xiaoyang Lin,Guodong Wei,Haichang Lu,Peizhe Tang,Weisheng Zhao###
(1264352, 1264354)
 In this study, we found thatspin flipping can be achieved by the valley-Zeeman SOF in monolayer WSe2 atroom temperature, which manifests as a negative magnetoresistance in thevertical spin valve.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 650, 'T', 1]

WSe2
###Spin Manipulation by Giant Valley-Zeeman Spin-Orbit Field in Atom-Thick WSe2|Xinhe Wang,Wei Yang,Wang Yang,Yuan Cao,Xiaoyang Lin,Guodong Wei,Haichang Lu,Peizhe Tang,Weisheng Zhao###
(1264360, 1264362)
 In this study, we found thatspin flipping can be achieved by the valley-Zeeman SOF in monolayer WSe2 atroom temperature, which manifests as a negative magnetoresistance in thevertical spin valve.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 650, 'T', 1]

K
###Spin Manipulation by Giant Valley-Zeeman Spin-Orbit Field in Atom-Thick WSe2|Xinhe Wang,Wei Yang,Wang Yang,Yuan Cao,Xiaoyang Lin,Guodong Wei,Haichang Lu,Peizhe Tang,Weisheng Zhao###
(1264417, 1264417)
 Quantum transmission calculations based on an effectivemodel near the K valley of WSe2 confirm the precessional spin transport ofcarriers under the giant SOF, which is estimated to be 650 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 650, 'T', 0]

WSe2
###Spin Manipulation by Giant Valley-Zeeman Spin-Orbit Field in Atom-Thick WSe2|Xinhe Wang,Wei Yang,Wang Yang,Yuan Cao,Xiaoyang Lin,Guodong Wei,Haichang Lu,Peizhe Tang,Weisheng Zhao###
(1264423, 1264425)
 Quantum transmission calculations based on an effectivemodel near the K valley of WSe2 confirm the precessional spin transport ofcarriers under the giant SOF, which is estimated to be 650 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 650, 'T', 0]

SOF
###Spin Manipulation by Giant Valley-Zeeman Spin-Orbit Field in Atom-Thick WSe2|Xinhe Wang,Wei Yang,Wang Yang,Yuan Cao,Xiaoyang Lin,Guodong Wei,Haichang Lu,Peizhe Tang,Weisheng Zhao###
(1264448, 1264450)
 Quantum transmission calculations based on an effectivemodel near the K valley of WSe2 confirm the precessional spin transport ofcarriers under the giant SOF, which is estimated to be 650 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 650, 'T', 0]

In
###Spin Manipulation by Giant Valley-Zeeman Spin-Orbit Field in Atom-Thick WSe2|Xinhe Wang,Wei Yang,Wang Yang,Yuan Cao,Xiaoyang Lin,Guodong Wei,Haichang Lu,Peizhe Tang,Weisheng Zhao###
(1264465, 1264465)
 In particular,the valley-Zeeman SOF-induced spin dynamics was demonstrated to be tunable withthe layer number and stacking phase of WSe2 as well as the gate voltage, whichprovides a novel strategy for spin manipulation and can benefit the developmentof ultralow-power spintronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 650, 'T', 1]

SOF
###Spin Manipulation by Giant Valley-Zeeman Spin-Orbit Field in Atom-Thick WSe2|Xinhe Wang,Wei Yang,Wang Yang,Yuan Cao,Xiaoyang Lin,Guodong Wei,Haichang Lu,Peizhe Tang,Weisheng Zhao###
(1264477, 1264479)
 In particular,the valley-Zeeman SOF-induced spin dynamics was demonstrated to be tunable withthe layer number and stacking phase of WSe2 as well as the gate voltage, whichprovides a novel strategy for spin manipulation and can benefit the developmentof ultralow-power spintronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 650, 'T', 1]

WSe2
###Spin Manipulation by Giant Valley-Zeeman Spin-Orbit Field in Atom-Thick WSe2|Xinhe Wang,Wei Yang,Wang Yang,Yuan Cao,Xiaoyang Lin,Guodong Wei,Haichang Lu,Peizhe Tang,Weisheng Zhao###
(1264514, 1264516)
 In particular,the valley-Zeeman SOF-induced spin dynamics was demonstrated to be tunable withthe layer number and stacking phase of WSe2 as well as the gate voltage, whichprovides a novel strategy for spin manipulation and can benefit the developmentof ultralow-power spintronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 650, 'T', 1]

GaAs/AlGaAs
###Hydrodynamic charge transport in GaAs/AlGaAs ultrahigh-mobility two-dimensional electron gas|Xinghao Wang,Peizhe Jia,Rui-Rui Du,L. N. Pfeiffer,K. W. Baldwin,K. W. West###
(1264901, 1264906)
Hydrodynamic charge transport in GaAs/AlGaAs ultrahigh-mobility two-dimensional electron gas.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[129.0, 117, ',', 2],[179.0, 2, 'DEG', 4],[260.0, 2, 'DEG', 5],[331.0, 2, 'DEG', 6]

GaAs/AlGaAs
###Hydrodynamic charge transport in GaAs/AlGaAs ultrahigh-mobility two-dimensional electron gas|Xinghao Wang,Peizhe Jia,Rui-Rui Du,L. N. Pfeiffer,K. W. Baldwin,K. W. West###
(1264951, 1264956)
 Viscous fluid in an ultrahigh-mobility two-dimensional electron gas (2DEG) inGaAs/AlGaAs quantum wells is systematically studied through measurements ofnegative magnetoresistance (NMR) and photoresistance under microwave radiation,and the data are analyzed according to recent theoretical work by e.g.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[79.0, 117, ',', 1],[129.0, 2, 'DEG', 3],[210.0, 2, 'DEG', 4],[281.0, 2, 'DEG', 5]

N
###Hydrodynamic charge transport in GaAs/AlGaAs ultrahigh-mobility two-dimensional electron gas|Xinghao Wang,Peizhe Jia,Rui-Rui Du,L. N. Pfeiffer,K. W. Baldwin,K. W. West###
(1264980, 1264980)
 Viscous fluid in an ultrahigh-mobility two-dimensional electron gas (2DEG) inGaAs/AlGaAs quantum wells is systematically studied through measurements ofnegative magnetoresistance (NMR) and photoresistance under microwave radiation,and the data are analyzed according to recent theoretical work by e.g.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 117, ',', 1],[105.0, 2, 'DEG', 3],[186.0, 2, 'DEG', 4],[257.0, 2, 'DEG', 5]

N
###Hydrodynamic charge transport in GaAs/AlGaAs ultrahigh-mobility two-dimensional electron gas|Xinghao Wang,Peizhe Jia,Rui-Rui Du,L. N. Pfeiffer,K. W. Baldwin,K. W. West###
(1265055, 1265055)
 Size-dependent andtemperature dependent NMR are found to conform to the theoretical predictions.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 117, ',', 1],[30.0, 2, 'DEG', 1],[111.0, 2, 'DEG', 2],[182.0, 2, 'DEG', 3]

In
###Hydrodynamic charge transport in GaAs/AlGaAs ultrahigh-mobility two-dimensional electron gas|Xinghao Wang,Peizhe Jia,Rui-Rui Du,L. N. Pfeiffer,K. W. Baldwin,K. W. West###
(1265077, 1265077)
In particular, transport of 2DEG with relatively weak Coulomb interaction(interparticle interaction parameter rs<1) manifests a crossover betweenviscous liquid and viscous gas.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 117, ',', 2],[8.0, 2, 'DEG', 0],[89.0, 2, 'DEG', 1],[160.0, 2, 'DEG', 2]

FePt
###Fourfold anisotropic magnetoresistance of L1$_0$ FePt due to relaxation time anisotropy|Y. Dai,Y. W. Zhao,L. Ma,M. Tang,X. P. Qiu,Y. Liu,Z. Yuan,S. M. Zhou###
(1265260, 1265261)
Fourfold anisotropic magnetoresistance of L<missing VAR>10 FePt due to relaxation time anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FePt
###Fourfold anisotropic magnetoresistance of L1$_0$ FePt due to relaxation time anisotropy|Y. Dai,Y. W. Zhao,L. Ma,M. Tang,X. P. Qiu,Y. Liu,Z. Yuan,S. M. Zhou###
(1265311, 1265312)
 Experimental measurements show that the angular dependence of the anisotropicmagnetoresistance (AMR) in L<missing VAR>10 ordered FePt epitaxial films on the currentorientation and magnetization direction is a superposition of the correspondingdependences of twofold and fourfold symmetries.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La
###Rare-Earth Control of the Superconducting Upper Critical Field in Infinite-Layer Nickelates|Bai Yang Wang,Tiffany C. Wang,Yu-Te Hsu,Motoki Osada,Kyuho Lee,Chunjing Jia,Caitlin Duffy,Danfeng Li,Jennifer Fowlie,Malcolm R. Beasley,Thomas P. Devereaux,Ian R. Fisher,Nigel E. Hussey,Harold Y. Hwang###
(1265656, 1265656)
 Here we show strikingdifferences in the magnitude and anisotropy of the superconducting uppercritical field across the La-, Pr-, and Nd-nickelates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 5, 'distinctions', 1],[24.0, 4, 'f', 1],[145.0, 4, 'f', 2]

Pr
###Rare-Earth Control of the Superconducting Upper Critical Field in Infinite-Layer Nickelates|Bai Yang Wang,Tiffany C. Wang,Yu-Te Hsu,Motoki Osada,Kyuho Lee,Chunjing Jia,Caitlin Duffy,Danfeng Li,Jennifer Fowlie,Malcolm R. Beasley,Thomas P. Devereaux,Ian R. Fisher,Nigel E. Hussey,Harold Y. Hwang###
(1265660, 1265660)
 Here we show strikingdifferences in the magnitude and anisotropy of the superconducting uppercritical field across the La-, Pr-, and Nd-nickelates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 5, 'distinctions', 1],[20.0, 4, 'f', 1],[141.0, 4, 'f', 2]

Nd
###Rare-Earth Control of the Superconducting Upper Critical Field in Infinite-Layer Nickelates|Bai Yang Wang,Tiffany C. Wang,Yu-Te Hsu,Motoki Osada,Kyuho Lee,Chunjing Jia,Caitlin Duffy,Danfeng Li,Jennifer Fowlie,Malcolm R. Beasley,Thomas P. Devereaux,Ian R. Fisher,Nigel E. Hussey,Harold Y. Hwang###
(1265666, 1265666)
 Here we show strikingdifferences in the magnitude and anisotropy of the superconducting uppercritical field across the La-, Pr-, and Nd-nickelates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 5, 'distinctions', 1],[14.0, 4, 'f', 1],[135.0, 4, 'f', 2]

La3
###Rare-Earth Control of the Superconducting Upper Critical Field in Infinite-Layer Nickelates|Bai Yang Wang,Tiffany C. Wang,Yu-Te Hsu,Motoki Osada,Kyuho Lee,Chunjing Jia,Caitlin Duffy,Danfeng Li,Jennifer Fowlie,Malcolm R. Beasley,Thomas P. Devereaux,Ian R. Fisher,Nigel E. Hussey,Harold Y. Hwang###
(1265711, 1265712)
 These 5 distinctionsoriginate from the 4f electron characteristics of the rare-earth ions in thelattice they are absent for La3, nonmagnetic for the Pr3 singlet groundstate, and magnetic for the Nd3 Kramers<missing VAR> doublet.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 5, 'distinctions', 0],[31.0, 4, 'f', 0],[89.0, 4, 'f', 1]

Pr3
###Rare-Earth Control of the Superconducting Upper Critical Field in Infinite-Layer Nickelates|Bai Yang Wang,Tiffany C. Wang,Yu-Te Hsu,Motoki Osada,Kyuho Lee,Chunjing Jia,Caitlin Duffy,Danfeng Li,Jennifer Fowlie,Malcolm R. Beasley,Thomas P. Devereaux,Ian R. Fisher,Nigel E. Hussey,Harold Y. Hwang###
(1265721, 1265722)
 These 5 distinctionsoriginate from the 4f electron characteristics of the rare-earth ions in thelattice they are absent for La3, nonmagnetic for the Pr3 singlet groundstate, and magnetic for the Nd3 Kramers<missing VAR> doublet.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 5, 'distinctions', 0],[41.0, 4, 'f', 0],[79.0, 4, 'f', 1]

Nd3
###Rare-Earth Control of the Superconducting Upper Critical Field in Infinite-Layer Nickelates|Bai Yang Wang,Tiffany C. Wang,Yu-Te Hsu,Motoki Osada,Kyuho Lee,Chunjing Jia,Caitlin Duffy,Danfeng Li,Jennifer Fowlie,Malcolm R. Beasley,Thomas P. Devereaux,Ian R. Fisher,Nigel E. Hussey,Harold Y. Hwang###
(1265740, 1265741)
 These 5 distinctionsoriginate from the 4f electron characteristics of the rare-earth ions in thelattice they are absent for La3, nonmagnetic for the Pr3 singlet groundstate, and magnetic for the Nd3 Kramers<missing VAR> doublet.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 5, 'distinctions', 0],[60.0, 4, 'f', 0],[60.0, 4, 'f', 1]

Nd
###Rare-Earth Control of the Superconducting Upper Critical Field in Infinite-Layer Nickelates|Bai Yang Wang,Tiffany C. Wang,Yu-Te Hsu,Motoki Osada,Kyuho Lee,Chunjing Jia,Caitlin Duffy,Danfeng Li,Jennifer Fowlie,Malcolm R. Beasley,Thomas P. Devereaux,Ian R. Fisher,Nigel E. Hussey,Harold Y. Hwang###
(1265772, 1265772)
 The unique polar andazimuthal angle-dependent magnetoresistance found in the Nd-nickelates can beunderstood to arise from the magnetic contribution of the Nd3 4f moments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 5, 'distinctions', 1],[92.0, 4, 'f', 1],[29.0, 4, 'f', 0]

Nd3
###Rare-Earth Control of the Superconducting Upper Critical Field in Infinite-Layer Nickelates|Bai Yang Wang,Tiffany C. Wang,Yu-Te Hsu,Motoki Osada,Kyuho Lee,Chunjing Jia,Caitlin Duffy,Danfeng Li,Jennifer Fowlie,Malcolm R. Beasley,Thomas P. Devereaux,Ian R. Fisher,Nigel E. Hussey,Harold Y. Hwang###
(1265799, 1265800)
 The unique polar andazimuthal angle-dependent magnetoresistance found in the Nd-nickelates can beunderstood to arise from the magnetic contribution of the Nd3 4f moments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 5, 'distinctions', 1],[119.0, 4, 'f', 1],[1.0, 4, 'f', 0]

In
###Rare-Earth Control of the Superconducting Upper Critical Field in Infinite-Layer Nickelates|Bai Yang Wang,Tiffany C. Wang,Yu-Te Hsu,Motoki Osada,Kyuho Lee,Chunjing Jia,Caitlin Duffy,Danfeng Li,Jennifer Fowlie,Malcolm R. Beasley,Thomas P. Devereaux,Ian R. Fisher,Nigel E. Hussey,Harold Y. Hwang###
(1265806, 1265806)
 Inthe absence of rare-earth effects, we find that the nickelates broadly violatethe Pauli limit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 5, 'distinctions', 2],[126.0, 4, 'f', 2],[5.0, 4, 'f', 1]

Bi/Co
###Spin-Orbit Proximity Effect in Bi/Co Multilayer: The Role of Interface Scattering|Arthur Casa Nova Nonnig,Alexandre da Cas Viegas,Fabiano Mesquita da Rosa,Paulo Pureur,Milton Andre Tumelero###
(1265888, 1265890)
Spin-Orbit Proximity Effect in Bi/Co Multilayer The Role of Interface Scattering.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

US
###Unidirectional Spin Hall Magnetoresistance in Antiferromagnetic Heterostructures|Yang Cheng,Junyu Tang,Justin J. Michel,Su Kong Chong,Fengyuan Yang,Ran Cheng,Kang L. Wang###
(1266288, 1266289)
 Unidirectional spin Hall magnetoresistance (USMR) has been widely reported inthe heavy metal / ferromagnet (HM<missing VAR>/FM) bilayer systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Unidirectional Spin Hall Magnetoresistance in Antiferromagnetic Heterostructures|Yang Cheng,Junyu Tang,Justin J. Michel,Su Kong Chong,Fengyuan Yang,Ran Cheng,Kang L. Wang###
(1266316, 1266316)
 Unidirectional spin Hall magnetoresistance (USMR) has been widely reported inthe heavy metal / ferromagnet (HM<missing VAR>/FM) bilayer systems.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Unidirectional Spin Hall Magnetoresistance in Antiferromagnetic Heterostructures|Yang Cheng,Junyu Tang,Justin J. Michel,Su Kong Chong,Fengyuan Yang,Ran Cheng,Kang L. Wang###
(1266319, 1266319)
 Unidirectional spin Hall magnetoresistance (USMR) has been widely reported inthe heavy metal / ferromagnet (HM<missing VAR>/FM) bilayer systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

US
###Unidirectional Spin Hall Magnetoresistance in Antiferromagnetic Heterostructures|Yang Cheng,Junyu Tang,Justin J. Michel,Su Kong Chong,Fengyuan Yang,Ran Cheng,Kang L. Wang###
(1266334, 1266335)
 We observe the USMR inthe Pt/alpha-Fe2O3 bilayers where the alpha-Fe2O3 is an antiferromagnetic(AFM) insulator.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Unidirectional Spin Hall Magnetoresistance in Antiferromagnetic Heterostructures|Yang Cheng,Junyu Tang,Justin J. Michel,Su Kong Chong,Fengyuan Yang,Ran Cheng,Kang L. Wang###
(1266344, 1266344)
 We observe the USMR inthe Pt/alpha-Fe2O3 bilayers where the alpha-Fe2O3 is an antiferromagnetic(AFM) insulator.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe2O3
###Unidirectional Spin Hall Magnetoresistance in Antiferromagnetic Heterostructures|Yang Cheng,Junyu Tang,Justin J. Michel,Su Kong Chong,Fengyuan Yang,Ran Cheng,Kang L. Wang###
(1266348, 1266351)
 We observe the USMR inthe Pt/alpha-Fe2O3 bilayers where the alpha-Fe2O3 is an antiferromagnetic(AFM) insulator.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe2O3
###Unidirectional Spin Hall Magnetoresistance in Antiferromagnetic Heterostructures|Yang Cheng,Junyu Tang,Justin J. Michel,Su Kong Chong,Fengyuan Yang,Ran Cheng,Kang L. Wang###
(1266361, 1266364)
 We observe the USMR inthe Pt/alpha-Fe2O3 bilayers where the alpha-Fe2O3 is an antiferromagnetic(AFM) insulator.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Unidirectional Spin Hall Magnetoresistance in Antiferromagnetic Heterostructures|Yang Cheng,Junyu Tang,Justin J. Michel,Su Kong Chong,Fengyuan Yang,Ran Cheng,Kang L. Wang###
(1266375, 1266375)
 We observe the USMR inthe Pt/alpha-Fe2O3 bilayers where the alpha-Fe2O3 is an antiferromagnetic(AFM) insulator.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

US
###Unidirectional Spin Hall Magnetoresistance in Antiferromagnetic Heterostructures|Yang Cheng,Junyu Tang,Justin J. Michel,Su Kong Chong,Fengyuan Yang,Ran Cheng,Kang L. Wang###
(1266407, 1266408)
 Systematic field and temperature dependent measurementsconfirm the magnonic origin of the USMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Unidirectional Spin Hall Magnetoresistance in Antiferromagnetic Heterostructures|Yang Cheng,Junyu Tang,Justin J. Michel,Su Kong Chong,Fengyuan Yang,Ran Cheng,Kang L. Wang###
(1266420, 1266420)
 The appearance of AFM<missing VAR>-USMR is drivenby the imbalance of creation and annihilation of AFM<missing VAR> magnons by spin orbittorque due to thermal random field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

US
###Unidirectional Spin Hall Magnetoresistance in Antiferromagnetic Heterostructures|Yang Cheng,Junyu Tang,Justin J. Michel,Su Kong Chong,Fengyuan Yang,Ran Cheng,Kang L. Wang###
(1266423, 1266424)
 The appearance of AFM<missing VAR>-USMR is drivenby the imbalance of creation and annihilation of AFM<missing VAR> magnons by spin orbittorque due to thermal random field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Unidirectional Spin Hall Magnetoresistance in Antiferromagnetic Heterostructures|Yang Cheng,Junyu Tang,Justin J. Michel,Su Kong Chong,Fengyuan Yang,Ran Cheng,Kang L. Wang###
(1266450, 1266450)
 The appearance of AFM<missing VAR>-USMR is drivenby the imbalance of creation and annihilation of AFM<missing VAR> magnons by spin orbittorque due to thermal random field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

US
###Unidirectional Spin Hall Magnetoresistance in Antiferromagnetic Heterostructures|Yang Cheng,Junyu Tang,Justin J. Michel,Su Kong Chong,Fengyuan Yang,Ran Cheng,Kang L. Wang###
(1266498, 1266499)
 However, unlike its ferromagneticcounterpart, theoretical modeling reveals that the USMR in Pt/alpha-Fe2O3 isdetermined by the antiferromagtic magnon number, and with a non-monotonic fielddependence.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Unidirectional Spin Hall Magnetoresistance in Antiferromagnetic Heterostructures|Yang Cheng,Junyu Tang,Justin J. Michel,Su Kong Chong,Fengyuan Yang,Ran Cheng,Kang L. Wang###
(1266505, 1266505)
 However, unlike its ferromagneticcounterpart, theoretical modeling reveals that the USMR in Pt/alpha-Fe2O3 isdetermined by the antiferromagtic magnon number, and with a non-monotonic fielddependence.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe2O3
###Unidirectional Spin Hall Magnetoresistance in Antiferromagnetic Heterostructures|Yang Cheng,Junyu Tang,Justin J. Michel,Su Kong Chong,Fengyuan Yang,Ran Cheng,Kang L. Wang###
(1266509, 1266512)
 However, unlike its ferromagneticcounterpart, theoretical modeling reveals that the USMR in Pt/alpha-Fe2O3 isdetermined by the antiferromagtic magnon number, and with a non-monotonic fielddependence.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

US
###Unidirectional Spin Hall Magnetoresistance in Antiferromagnetic Heterostructures|Yang Cheng,Junyu Tang,Justin J. Michel,Su Kong Chong,Fengyuan Yang,Ran Cheng,Kang L. Wang###
(1266560, 1266561)
 Our findings extend the generality of the USMR which pave the waysfor the highly sensitive detection of AF spin state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Unidirectional Spin Hall Magnetoresistance in Antiferromagnetic Heterostructures|Yang Cheng,Junyu Tang,Justin J. Michel,Su Kong Chong,Fengyuan Yang,Ran Cheng,Kang L. Wang###
(1266587, 1266587)
 Our findings extend the generality of the USMR which pave the waysfor the highly sensitive detection of AF spin state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CeSbTe
###Colossal negative magnetoresistance in the complex charge density wave regime of an antiferromagnetic Dirac semimetal|Ratnadwip Singha,Kirstine J. Dalgaard,Dmitry Marchenko,Maxim Krivenkov,Emile D. L. Rienks,Milena Jovanovic,Samuel M. L. Teicher,Jiayi Hu,Tyger H. Salters,Jingjing Lin,Andrei Varykhalov,N. Phuan Ong,Leslie M. Schoop###
(1266758, 1266760)
 Here, weshow that in the highly electron doped region, the Dirac semimetal CeSbTedemonstrates similar properties as the manganites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CeSb0.11Te1.90
###Colossal negative magnetoresistance in the complex charge density wave regime of an antiferromagnetic Dirac semimetal|Ratnadwip Singha,Kirstine J. Dalgaard,Dmitry Marchenko,Maxim Krivenkov,Emile D. L. Rienks,Milena Jovanovic,Samuel M. L. Teicher,Jiayi Hu,Tyger H. Salters,Jingjing Lin,Andrei Varykhalov,N. Phuan Ong,Leslie M. Schoop###
(1266776, 1266780)
 CeSb0.11Te1.90hosts multiple charge density wave (CD<missing VAR>W) modulation-vectors and has a complexmagnetic phase diagram.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.036544850498338874,0.6312292358803987,0,0,0,0,0,0.33222591362126247,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Colossal negative magnetoresistance in the complex charge density wave regime of an antiferromagnetic Dirac semimetal|Ratnadwip Singha,Kirstine J. Dalgaard,Dmitry Marchenko,Maxim Krivenkov,Emile D. L. Rienks,Milena Jovanovic,Samuel M. L. Teicher,Jiayi Hu,Tyger H. Salters,Jingjing Lin,Andrei Varykhalov,N. Phuan Ong,Leslie M. Schoop###
(1266794, 1266794)
 CeSb0.11Te1.90hosts multiple charge density wave (CD<missing VAR>W) modulation-vectors and has a complexmagnetic phase diagram.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Colossal negative magnetoresistance in the complex charge density wave regime of an antiferromagnetic Dirac semimetal|Ratnadwip Singha,Kirstine J. Dalgaard,Dmitry Marchenko,Maxim Krivenkov,Emile D. L. Rienks,Milena Jovanovic,Samuel M. L. Teicher,Jiayi Hu,Tyger H. Salters,Jingjing Lin,Andrei Varykhalov,N. Phuan Ong,Leslie M. Schoop###
(1266796, 1266796)
 CeSb0.11Te1.90hosts multiple charge density wave (CD<missing VAR>W) modulation-vectors and has a complexmagnetic phase diagram.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Colossal negative magnetoresistance in the complex charge density wave regime of an antiferromagnetic Dirac semimetal|Ratnadwip Singha,Kirstine J. Dalgaard,Dmitry Marchenko,Maxim Krivenkov,Emile D. L. Rienks,Milena Jovanovic,Samuel M. L. Teicher,Jiayi Hu,Tyger H. Salters,Jingjing Lin,Andrei Varykhalov,N. Phuan Ong,Leslie M. Schoop###
(1266937, 1266937)
 Moreover, signatures ofthe coupling between the CD<missing VAR>W and a spin modulation are observed in resistivity.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Colossal negative magnetoresistance in the complex charge density wave regime of an antiferromagnetic Dirac semimetal|Ratnadwip Singha,Kirstine J. Dalgaard,Dmitry Marchenko,Maxim Krivenkov,Emile D. L. Rienks,Milena Jovanovic,Samuel M. L. Teicher,Jiayi Hu,Tyger H. Salters,Jingjing Lin,Andrei Varykhalov,N. Phuan Ong,Leslie M. Schoop###
(1266939, 1266939)
 Moreover, signatures ofthe coupling between the CD<missing VAR>W and a spin modulation are observed in resistivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Se3
###Quantum Transport and Magnetism of Dirac Electrons in Solids|Hiroki Isobe,Naoto Nagaosa###
(1267061, 1267064)
 The relativistic Dirac equation covers the fundamentals of electronicphenomena in solids and as such it effectively describes the electronic statesof the topological insulators like Bi2Se3 and Bi2Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Te3
###Quantum Transport and Magnetism of Dirac Electrons in Solids|Hiroki Isobe,Naoto Nagaosa###
(1267068, 1267071)
 The relativistic Dirac equation covers the fundamentals of electronicphenomena in solids and as such it effectively describes the electronic statesof the topological insulators like Bi2Se3 and Bi2Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Quantum Transport and Magnetism of Dirac Electrons in Solids|Hiroki Isobe,Naoto Nagaosa###
(1267206, 1267206)
 In a doped metallic state, theanisotropic magnetoresistance arises without uniform magnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnBi2Te4
###Quantum Transport and Magnetism of Dirac Electrons in Solids|Hiroki Isobe,Naoto Nagaosa###
(1267342, 1267346)
 We also discuss the stoichiometric magnetictopological insulator MnBi2Te4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuAuAs
###Electronic structure and physical properties of EuAuAs single crystal|S. Malick,J. Singh,A. Laha,V. Kanchana,Z. Hossain,D. Kaczorowski###
(1267369, 1267371)
Electronic structure and physical properties of EuAuAs single crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 6, 'K', 3],[149.0, 40, 'K', 4]

EuAuAs
###Electronic structure and physical properties of EuAuAs single crystal|S. Malick,J. Singh,A. Laha,V. Kanchana,Z. Hossain,D. Kaczorowski###
(1267388, 1267390)
 High-quality single crystals of EuAuAs were studied by means of powder x<missing VAR>-raydiffraction, magnetization, magnetic susceptibility, heat capacity, electricalresistivity and magnetoresistance measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 6, 'K', 2],[130.0, 40, 'K', 3]

ZrSiBe
###Electronic structure and physical properties of EuAuAs single crystal|S. Malick,J. Singh,A. Laha,V. Kanchana,Z. Hossain,D. Kaczorowski###
(1267456, 1267458)
 The compound crystallizes witha hexagonal structure of the ZrSiBe type (space group P63/mmc).
Featurization terminated normally.
0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 6, 'K', 1],[62.0, 40, 'K', 2]

P63
###Electronic structure and physical properties of EuAuAs single crystal|S. Malick,J. Singh,A. Laha,V. Kanchana,Z. Hossain,D. Kaczorowski###
(1267467, 1267469)
 The compound crystallizes witha hexagonal structure of the ZrSiBe type (space group P63/mmc).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 6, 'K', 1],[51.0, 40, 'K', 2]

Eu
###Electronic structure and physical properties of EuAuAs single crystal|S. Malick,J. Singh,A. Laha,V. Kanchana,Z. Hossain,D. Kaczorowski###
(1267499, 1267499)
 It ordersantiferromagnetically below 6 K due to the magnetic moments of divalent Euions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 6, 'K', 0],[21.0, 40, 'K', 1]

EuAuAs
###Electronic structure and physical properties of EuAuAs single crystal|S. Malick,J. Singh,A. Laha,V. Kanchana,Z. Hossain,D. Kaczorowski###
(1267585, 1267587)
 The antiferromagnetic ground state in mboxEuAuAs wascorroborated in the textitab initio electronic band structure calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 6, 'K', 3],[65.0, 40, 'K', 2]

EuAuAs
###Electronic structure and physical properties of EuAuAs single crystal|S. Malick,J. Singh,A. Laha,V. Kanchana,Z. Hossain,D. Kaczorowski###
(1267718, 1267720)
 Our findings,combined with experimental analysis, makes EuAuAs a plausible candidate for anantiferromagnetic topological nodal-line semimetal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[235.0, 6, 'K', 6],[198.0, 40, 'K', 5]

LaSb2
###Multiple topological nodal structure in LaSb2 with large linear magnetoresistance|Y. X. Qiao,Z. C. Tao,F. Y. Wang,Huaiqiang Wang,Z. C. Jiang,Z. T. Liu,Soohyun Cho,F. Y. Zhang,Q. K. Meng,W. Xia,Y. C. Yang,Z. Huang,J. S. Liu,Z. H. Liu,Z. W. Zhu,S. Qiao,Y. F. Guo,Haijun Zhang,Dawei Shen###
(1267762, 1267764)
Multiple topological nodal structure in LaSb2 with large linear magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaSb2
###Multiple topological nodal structure in LaSb2 with large linear magnetoresistance|Y. X. Qiao,Z. C. Tao,F. Y. Wang,Huaiqiang Wang,Z. C. Jiang,Z. T. Liu,Soohyun Cho,F. Y. Zhang,Q. K. Meng,W. Xia,Y. C. Yang,Z. Huang,J. S. Liu,Z. H. Liu,Z. W. Zhu,S. Qiao,Y. F. Guo,Haijun Zhang,Dawei Shen###
(1267849, 1267851)
 Here, using symmetryanalysis and first-principles calculations, we propose the coexistence ofmultiple topological nodal structure in LaSb2, including topological nodalsurfaces, nodal lines and in particular eightfold degenerate nodal points,which have been scarcely observed in a single material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaSb2
###Multiple topological nodal structure in LaSb2 with large linear magnetoresistance|Y. X. Qiao,Z. C. Tao,F. Y. Wang,Huaiqiang Wang,Z. C. Jiang,Z. T. Liu,Soohyun Cho,F. Y. Zhang,Q. K. Meng,W. Xia,Y. C. Yang,Z. Huang,J. S. Liu,Z. H. Liu,Z. W. Zhu,S. Qiao,Y. F. Guo,Haijun Zhang,Dawei Shen###
(1267968, 1267970)
 Further, utilizing highresolution angle-resolved photoemission spectroscopy in combination withShubnikov-de Haas quantum oscillations measurements, we confirm the existenceof nodal surfaces and eightfold degenerate nodal points in LaSb2, and extractthe pi Berry phase proving the non-trivial electronic band structuretopology therein.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaSb2
###Multiple topological nodal structure in LaSb2 with large linear magnetoresistance|Y. X. Qiao,Z. C. Tao,F. Y. Wang,Huaiqiang Wang,Z. C. Jiang,Z. T. Liu,Soohyun Cho,F. Y. Zhang,Q. K. Meng,W. Xia,Y. C. Yang,Z. Huang,J. S. Liu,Z. H. Liu,Z. W. Zhu,S. Qiao,Y. F. Guo,Haijun Zhang,Dawei Shen###
(1268069, 1268071)
 Ourwork renews the insights into the exotic topological phenomena in LaSb2 and itsanalogous.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeTe0.5Se0.5
###Transport evidence for the surface state and spin-phonon interaction in FeTe$_{0.5}$Se$_{0.5}$|Mu-Yun Li,Jia-Wei Hu,Ge Huang,Wei-Jian Li,Ya-Kang Peng,Guangyong Xu,Genda Gu,Xiao-Jia Chen###
(1268111, 1268115)
Transport evidence for the surface state and spin-phonon interaction in FeTe0.5Se0.5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[247.0, 40, 'K', 5]

FeTe0.5Se0.5
###Transport evidence for the surface state and spin-phonon interaction in FeTe$_{0.5}$Se$_{0.5}$|Mu-Yun Li,Jia-Wei Hu,Ge Huang,Wei-Jian Li,Ya-Kang Peng,Guangyong Xu,Genda Gu,Xiao-Jia Chen###
(1268176, 1268180)
 The topologically nontrivial surface states ofFeTe0.5Se0.5 have been predicted by several calculations and thenconfirmed by high-resolution photoemission and scanning tunneling experiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[182.0, 40, 'K', 3]

FeTe0.5Se0.5
###Transport evidence for the surface state and spin-phonon interaction in FeTe$_{0.5}$Se$_{0.5}$|Mu-Yun Li,Jia-Wei Hu,Ge Huang,Wei-Jian Li,Ya-Kang Peng,Guangyong Xu,Genda Gu,Xiao-Jia Chen###
(1268426, 1268430)
 Our results solidly corroborate thetopological surface states of FeTe0.5Se0.5 and provide anunderstanding of the mechanism of the superconductivity in iron chalcogenides.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 40, 'K', 2]

C
###Observation of strange metal in hole-doped valley-spin insulator|Tuan Dung Nguyen,Baithi Mallesh,Seon Je Kim,Houcine Bouzid,Byeongwook Cho,Xuan Phu Le,Tien Dat Ngo,Won Jong Yoo,Young-Min Kim,Dinh Loc Duong,Young Hee Lee###
(1268534, 1268534)
 Temperature-linear resistance at low temperatures in strange metals is anexotic characteristic of strong correlation systems, as observed in high-T<missing VAR>Csuperconducting cuprates, heavy fermions, Fe-based superconductors, ruthenates,and twisted bilayer graphene.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 9.5, 'x', 2],[123.0, 150, 'K', 2],[126.0, 1.8, 'K', 2],[171.0, 0, ',', 4],[197.0, 2, ',', 7],[217.0, 4, ',', 7]

Fe
###Observation of strange metal in hole-doped valley-spin insulator|Tuan Dung Nguyen,Baithi Mallesh,Seon Je Kim,Houcine Bouzid,Byeongwook Cho,Xuan Phu Le,Tien Dat Ngo,Won Jong Yoo,Young-Min Kim,Dinh Loc Duong,Young Hee Lee###
(1268547, 1268547)
 Temperature-linear resistance at low temperatures in strange metals is anexotic characteristic of strong correlation systems, as observed in high-T<missing VAR>Csuperconducting cuprates, heavy fermions, Fe-based superconductors, ruthenates,and twisted bilayer graphene.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 9.5, 'x', 2],[110.0, 150, 'K', 2],[113.0, 1.8, 'K', 2],[158.0, 0, ',', 4],[184.0, 2, ',', 7],[204.0, 4, ',', 7]

V
###Observation of strange metal in hole-doped valley-spin insulator|Tuan Dung Nguyen,Baithi Mallesh,Seon Je Kim,Houcine Bouzid,Byeongwook Cho,Xuan Phu Le,Tien Dat Ngo,Won Jong Yoo,Young-Min Kim,Dinh Loc Duong,Young Hee Lee###
(1268588, 1268588)
 Here, we introduce a hole-doped valley-spininsulator, V-doped WSe2, with hole pockets in the valence band.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 9.5, 'x', 1],[69.0, 150, 'K', 1],[72.0, 1.8, 'K', 1],[117.0, 0, ',', 3],[143.0, 2, ',', 6],[163.0, 4, ',', 6]

WSe2
###Observation of strange metal in hole-doped valley-spin insulator|Tuan Dung Nguyen,Baithi Mallesh,Seon Je Kim,Houcine Bouzid,Byeongwook Cho,Xuan Phu Le,Tien Dat Ngo,Won Jong Yoo,Young-Min Kim,Dinh Loc Duong,Young Hee Lee###
(1268592, 1268594)
 Here, we introduce a hole-doped valley-spininsulator, V-doped WSe2, with hole pockets in the valence band.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 9.5, 'x', 1],[63.0, 150, 'K', 1],[66.0, 1.8, 'K', 1],[111.0, 0, ',', 3],[137.0, 2, ',', 6],[157.0, 4, ',', 6]

W1-xSe2
###Observation of strange metal in hole-doped valley-spin insulator|Tuan Dung Nguyen,Baithi Mallesh,Seon Je Kim,Houcine Bouzid,Byeongwook Cho,Xuan Phu Le,Tien Dat Ngo,Won Jong Yoo,Young-Min Kim,Dinh Loc Duong,Young Hee Lee###
(1268628, 1268633)
 The strangemetal characteristic was observed in VxW1-xSe2 at a critical carrierconcentration of 9.5 x 1020 cm-3 from 150 K to 1.8 K.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[14.0, 9.5, 'x', 0],[24.0, 150, 'K', 0],[27.0, 1.8, 'K', 0],[72.0, 0, ',', 2],[98.0, 2, ',', 5],[118.0, 4, ',', 5]

H
###Observation of strange metal in hole-doped valley-spin insulator|Tuan Dung Nguyen,Baithi Mallesh,Seon Je Kim,Houcine Bouzid,Byeongwook Cho,Xuan Phu Le,Tien Dat Ngo,Won Jong Yoo,Young-Min Kim,Dinh Loc Duong,Young Hee Lee###
(1268696, 1268696)
 Usingthe ansatz R<missing VAR>(H,T) - R<missing VAR>(0,0)  [(alpha.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 9.5, 'x', 2],[39.0, 150, 'K', 2],[36.0, 1.8, 'K', 2],[9.0, 0, ',', 0],[35.0, 2, ',', 3],[55.0, 4, ',', 3]

B
###Observation of strange metal in hole-doped valley-spin insulator|Tuan Dung Nguyen,Baithi Mallesh,Seon Je Kim,Houcine Bouzid,Byeongwook Cho,Xuan Phu Le,Tien Dat Ngo,Won Jong Yoo,Young-Min Kim,Dinh Loc Duong,Young Hee Lee###
(1268725, 1268725)
B)2]1/2, thegamma/alpha ratio is estimated approximately to 4, distinct from that for thequasiparticles of L<missing VAR>SCO, BaFe2(As1-xPx)2 (gamma/alpha1) and bosons of YBCO(gamma/alpha2).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 9.5, 'x', 5],[68.0, 150, 'K', 5],[65.0, 1.8, 'K', 5],[20.0, 0, ',', 3],[6.0, 2, ',', 0],[26.0, 4, ',', 0]

SCO
###Observation of strange metal in hole-doped valley-spin insulator|Tuan Dung Nguyen,Baithi Mallesh,Seon Je Kim,Houcine Bouzid,Byeongwook Cho,Xuan Phu Le,Tien Dat Ngo,Won Jong Yoo,Young-Min Kim,Dinh Loc Duong,Young Hee Lee###
(1268770, 1268772)
B)2]1/2, thegamma/alpha ratio is estimated approximately to 4, distinct from that for thequasiparticles of L<missing VAR>SCO, BaFe2(As1-xPx)2 (gamma/alpha1) and bosons of YBCO(gamma/alpha2).
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 9.5, 'x', 5],[113.0, 150, 'K', 5],[110.0, 1.8, 'K', 5],[65.0, 0, ',', 3],[39.0, 2, ',', 0],[19.0, 4, ',', 0]

Fe2
###Observation of strange metal in hole-doped valley-spin insulator|Tuan Dung Nguyen,Baithi Mallesh,Seon Je Kim,Houcine Bouzid,Byeongwook Cho,Xuan Phu Le,Tien Dat Ngo,Won Jong Yoo,Young-Min Kim,Dinh Loc Duong,Young Hee Lee###
(1268776, 1268777)
B)2]1/2, thegamma/alpha ratio is estimated approximately to 4, distinct from that for thequasiparticles of L<missing VAR>SCO, BaFe2(As1-xPx)2 (gamma/alpha1) and bosons of YBCO(gamma/alpha2).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 9.5, 'x', 5],[119.0, 150, 'K', 5],[116.0, 1.8, 'K', 5],[71.0, 0, ',', 3],[45.0, 2, ',', 0],[25.0, 4, ',', 0]

As1-x
###Observation of strange metal in hole-doped valley-spin insulator|Tuan Dung Nguyen,Baithi Mallesh,Seon Je Kim,Houcine Bouzid,Byeongwook Cho,Xuan Phu Le,Tien Dat Ngo,Won Jong Yoo,Young-Min Kim,Dinh Loc Duong,Young Hee Lee###
(1268779, 1268782)
B)2]1/2, thegamma/alpha ratio is estimated approximately to 4, distinct from that for thequasiparticles of L<missing VAR>SCO, BaFe2(As1-xPx)2 (gamma/alpha1) and bosons of YBCO(gamma/alpha2).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[132.0, 9.5, 'x', 5],[122.0, 150, 'K', 5],[119.0, 1.8, 'K', 5],[74.0, 0, ',', 3],[48.0, 2, ',', 0],[28.0, 4, ',', 0]

YBCO
###Observation of strange metal in hole-doped valley-spin insulator|Tuan Dung Nguyen,Baithi Mallesh,Seon Je Kim,Houcine Bouzid,Byeongwook Cho,Xuan Phu Le,Tien Dat Ngo,Won Jong Yoo,Young-Min Kim,Dinh Loc Duong,Young Hee Lee###
(1268800, 1268803)
B)2]1/2, thegamma/alpha ratio is estimated approximately to 4, distinct from that for thequasiparticles of L<missing VAR>SCO, BaFe2(As1-xPx)2 (gamma/alpha1) and bosons of YBCO(gamma/alpha2).
Featurization terminated normally.
0,0,0,0,0.25,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 9.5, 'x', 5],[143.0, 150, 'K', 5],[140.0, 1.8, 'K', 5],[95.0, 0, ',', 3],[69.0, 2, ',', 0],[49.0, 4, ',', 0]

Co3Sn2S2
###Weak antilocalization and ferromagnetism in magnetic Weyl semimetal Co3Sn2S2|Kapil Kuma,M. M. Sharma,V. P. S. Awana###
(1268885, 1268890)
Weak antilocalization and ferromagnetism in magnetic Weyl semimetal Co3Sn2S2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 175, 'K', 4],[208.0, 230, '%', 6],[212.0, 2, 'K', 6],[259.0, 70, 'K', 7],[316.0, 1, 'T', 8],[376.0, 30, 'K', 8]

Co3Sn2S2
###Weak antilocalization and ferromagnetism in magnetic Weyl semimetal Co3Sn2S2|Kapil Kuma,M. M. Sharma,V. P. S. Awana###
(1268916, 1268921)
 Here we report successful synthesis of single crystalline magnetic Weylsemimetal Co3Sn2S2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 175, 'K', 3],[177.0, 230, '%', 5],[181.0, 2, 'K', 5],[228.0, 70, 'K', 6],[285.0, 1, 'T', 7],[345.0, 30, 'K', 7]

Co3Sn2S2
###Weak antilocalization and ferromagnetism in magnetic Weyl semimetal Co3Sn2S2|Kapil Kuma,M. M. Sharma,V. P. S. Awana###
(1269081, 1269086)
 The synthesizedCo3Sn2S2 exhibits high magnetoresistance of around 230% at 2K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 175, 'K', 2],[12.0, 230, '%', 0],[16.0, 2, 'K', 0],[63.0, 70, 'K', 1],[120.0, 1, 'T', 2],[180.0, 30, 'K', 2]

Co3Sn2S2
###Weak antilocalization and ferromagnetism in magnetic Weyl semimetal Co3Sn2S2|Kapil Kuma,M. M. Sharma,V. P. S. Awana###
(1269116, 1269121)
 The transportphenomenon in synthesized Co3Sn2S2 appears to have contributions fromtopological surface states at low temperature below say 70 K, and above thatthe same is found to be strongly dependent on its bulk magnetic state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 175, 'K', 3],[18.0, 230, '%', 1],[14.0, 2, 'K', 1],[28.0, 70, 'K', 0],[85.0, 1, 'T', 1],[145.0, 30, 'K', 1]

Co3Sn2S2
###Weak antilocalization and ferromagnetism in magnetic Weyl semimetal Co3Sn2S2|Kapil Kuma,M. M. Sharma,V. P. S. Awana###
(1269249, 1269254)
Magnetoconductivity data at low fields of up to plus minus 1T (Tesla) is fittedwith Hikami Larkin Nagaoka model, which shows the presence of weakantilocalization effect in synthesized Co3Sn2S2 crystal at low temperaturesbelow 30K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[252.0, 175, 'K', 4],[151.0, 230, '%', 2],[147.0, 2, 'K', 2],[100.0, 70, 'K', 1],[43.0, 1, 'T', 0],[12.0, 30, 'K', 0]

In
###Large Bilinear Magnetoresistance from Rashba Spin-Splitting on the Surface of a Topological Insulator|Yang Wang,Binbin Liu,Yue-Xin Huang,Sivakumar V. Mambakkam,Yong Wang,Shengyuan A. Yang,Xian-Lei Sheng,Stephanie A. Law,John Q. Xiao###
(1269306, 1269306)
 In addition to the topologically protected linear dispersion, aband-bending-confined two-dimensional electron gas with tunable Rashbaspin-splitting (R<missing VAR>SS) was found to coexist with the topological surface stateson the surface of topological insulators (T<missing VAR>Is).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Large Bilinear Magnetoresistance from Rashba Spin-Splitting on the Surface of a Topological Insulator|Yang Wang,Binbin Liu,Yue-Xin Huang,Sivakumar V. Mambakkam,Yong Wang,Shengyuan A. Yang,Xian-Lei Sheng,Stephanie A. Law,John Q. Xiao###
(1269354, 1269354)
 In addition to the topologically protected linear dispersion, aband-bending-confined two-dimensional electron gas with tunable Rashbaspin-splitting (R<missing VAR>SS) was found to coexist with the topological surface stateson the surface of topological insulators (T<missing VAR>Is).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Large Bilinear Magnetoresistance from Rashba Spin-Splitting on the Surface of a Topological Insulator|Yang Wang,Binbin Liu,Yue-Xin Huang,Sivakumar V. Mambakkam,Yong Wang,Shengyuan A. Yang,Xian-Lei Sheng,Stephanie A. Law,John Q. Xiao###
(1269415, 1269415)
 Here, we report the observationof large bilinear magnetoresistance (BMR) in Bi2Se3 films decorated withtransition metal atoms.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Se3
###Large Bilinear Magnetoresistance from Rashba Spin-Splitting on the Surface of a Topological Insulator|Yang Wang,Binbin Liu,Yue-Xin Huang,Sivakumar V. Mambakkam,Yong Wang,Shengyuan A. Yang,Xian-Lei Sheng,Stephanie A. Law,John Q. Xiao###
(1269422, 1269425)
 Here, we report the observationof large bilinear magnetoresistance (BMR) in Bi2Se3 films decorated withtransition metal atoms.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Large Bilinear Magnetoresistance from Rashba Spin-Splitting on the Surface of a Topological Insulator|Yang Wang,Binbin Liu,Yue-Xin Huang,Sivakumar V. Mambakkam,Yong Wang,Shengyuan A. Yang,Xian-Lei Sheng,Stephanie A. Law,John Q. Xiao###
(1269449, 1269449)
 The magnitude of the BMR sensitively depends on thetype and amount of atoms deposited, with a maximum achieved value close tothose of strong Rashba semiconductors.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SS
###Large Bilinear Magnetoresistance from Rashba Spin-Splitting on the Surface of a Topological Insulator|Yang Wang,Binbin Liu,Yue-Xin Huang,Sivakumar V. Mambakkam,Yong Wang,Shengyuan A. Yang,Xian-Lei Sheng,Stephanie A. Law,John Q. Xiao###
(1269527, 1269528)
 Our first-principles calculationsreproduce the quantum well states and reveal sizable R<missing VAR>SS in all Bi2Se3heterostructures with broken inversion symmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Se3
###Large Bilinear Magnetoresistance from Rashba Spin-Splitting on the Surface of a Topological Insulator|Yang Wang,Binbin Liu,Yue-Xin Huang,Sivakumar V. Mambakkam,Yong Wang,Shengyuan A. Yang,Xian-Lei Sheng,Stephanie A. Law,John Q. Xiao###
(1269534, 1269537)
 Our first-principles calculationsreproduce the quantum well states and reveal sizable R<missing VAR>SS in all Bi2Se3heterostructures with broken inversion symmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SS
###Large Bilinear Magnetoresistance from Rashba Spin-Splitting on the Surface of a Topological Insulator|Yang Wang,Binbin Liu,Yue-Xin Huang,Sivakumar V. Mambakkam,Yong Wang,Shengyuan A. Yang,Xian-Lei Sheng,Stephanie A. Law,John Q. Xiao###
(1269569, 1269570)
 Our results show thatcharge-spin interconversion through R<missing VAR>SS states in T<missing VAR>Is can be fine-tuned throughsurface atom deposition and easily detected via BMR for potential spintronicapplications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Large Bilinear Magnetoresistance from Rashba Spin-Splitting on the Surface of a Topological Insulator|Yang Wang,Binbin Liu,Yue-Xin Huang,Sivakumar V. Mambakkam,Yong Wang,Shengyuan A. Yang,Xian-Lei Sheng,Stephanie A. Law,John Q. Xiao###
(1269604, 1269604)
 Our results show thatcharge-spin interconversion through R<missing VAR>SS states in T<missing VAR>Is can be fine-tuned throughsurface atom deposition and easily detected via BMR for potential spintronicapplications.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Te
###Onset Temperatures for Superconducting Fluctuations in Te-annealed FeTe$_{1-x}$Se$_x$ Single Crystals: Evidence for the BCS-BEC Crossover|Yu Uezono,Takumi Otsuka,Shotaro Hagisawa,Haruka Taniguchi,Michiaki Matsukawa,Takenori Fujii,Takao Watanabe###
(1269638, 1269638)
Onset Temperatures for Superconducting Fluctuations in Te-annealed FeTe1-xSex<missing VAR> Single Crystals Evidence for the BCS-BE<missing VAR>C Crossover.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[248.0, 0.1, ',', 3],[251.0, 0.2, ',', 3],[254.0, 0.3, ',', 3],[298.0, 0.4, ',', 5],[307.0, 40, 'K', 5],[314.0, 2.7, 'times', 5]

FeTe1-xSe
###Onset Temperatures for Superconducting Fluctuations in Te-annealed FeTe$_{1-x}$Se$_x$ Single Crystals: Evidence for the BCS-BEC Crossover|Yu Uezono,Takumi Otsuka,Shotaro Hagisawa,Haruka Taniguchi,Michiaki Matsukawa,Takenori Fujii,Takao Watanabe###
(1269642, 1269647)
Onset Temperatures for Superconducting Fluctuations in Te-annealed FeTe1-xSex<missing VAR> Single Crystals Evidence for the BCS-BE<missing VAR>C Crossover.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[239.0, 0.1, ',', 3],[242.0, 0.2, ',', 3],[245.0, 0.3, ',', 3],[289.0, 0.4, ',', 5],[298.0, 40, 'K', 5],[305.0, 2.7, 'times', 5]

BCS
###Onset Temperatures for Superconducting Fluctuations in Te-annealed FeTe$_{1-x}$Se$_x$ Single Crystals: Evidence for the BCS-BEC Crossover|Yu Uezono,Takumi Otsuka,Shotaro Hagisawa,Haruka Taniguchi,Michiaki Matsukawa,Takenori Fujii,Takao Watanabe###
(1269660, 1269662)
Onset Temperatures for Superconducting Fluctuations in Te-annealed FeTe1-xSex<missing VAR> Single Crystals Evidence for the BCS-BE<missing VAR>C Crossover.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[224.0, 0.1, ',', 3],[227.0, 0.2, ',', 3],[230.0, 0.3, ',', 3],[274.0, 0.4, ',', 5],[283.0, 40, 'K', 5],[290.0, 2.7, 'times', 5]

B
###Onset Temperatures for Superconducting Fluctuations in Te-annealed FeTe$_{1-x}$Se$_x$ Single Crystals: Evidence for the BCS-BEC Crossover|Yu Uezono,Takumi Otsuka,Shotaro Hagisawa,Haruka Taniguchi,Michiaki Matsukawa,Takenori Fujii,Takao Watanabe###
(1269664, 1269664)
Onset Temperatures for Superconducting Fluctuations in Te-annealed FeTe1-xSex<missing VAR> Single Crystals Evidence for the BCS-BE<missing VAR>C Crossover.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[222.0, 0.1, ',', 3],[225.0, 0.2, ',', 3],[228.0, 0.3, ',', 3],[272.0, 0.4, ',', 5],[281.0, 40, 'K', 5],[288.0, 2.7, 'times', 5]

C
###Onset Temperatures for Superconducting Fluctuations in Te-annealed FeTe$_{1-x}$Se$_x$ Single Crystals: Evidence for the BCS-BEC Crossover|Yu Uezono,Takumi Otsuka,Shotaro Hagisawa,Haruka Taniguchi,Michiaki Matsukawa,Takenori Fujii,Takao Watanabe###
(1269666, 1269666)
Onset Temperatures for Superconducting Fluctuations in Te-annealed FeTe1-xSex<missing VAR> Single Crystals Evidence for the BCS-BE<missing VAR>C Crossover.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[220.0, 0.1, ',', 3],[223.0, 0.2, ',', 3],[226.0, 0.3, ',', 3],[270.0, 0.4, ',', 5],[279.0, 40, 'K', 5],[286.0, 2.7, 'times', 5]

FeSe
###Onset Temperatures for Superconducting Fluctuations in Te-annealed FeTe$_{1-x}$Se$_x$ Single Crystals: Evidence for the BCS-BEC Crossover|Yu Uezono,Takumi Otsuka,Shotaro Hagisawa,Haruka Taniguchi,Michiaki Matsukawa,Takenori Fujii,Takao Watanabe###
(1269706, 1269707)
 Recently, the superconductors community has witnessed an unsettled debateregarding whether iron-based superconductors, in particular FeSe andFeSe1-xSx<missing VAR>, are in the Bardeen-Cooper-Shrieffer (BCS) - Bose-Einsteincondensation (BE<missing VAR>C) crossover regime.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 0.1, ',', 2],[182.0, 0.2, ',', 2],[185.0, 0.3, ',', 2],[229.0, 0.4, ',', 4],[238.0, 40, 'K', 4],[245.0, 2.7, 'times', 4]

FeSe1-xS
###Onset Temperatures for Superconducting Fluctuations in Te-annealed FeTe$_{1-x}$Se$_x$ Single Crystals: Evidence for the BCS-BEC Crossover|Yu Uezono,Takumi Otsuka,Shotaro Hagisawa,Haruka Taniguchi,Michiaki Matsukawa,Takenori Fujii,Takao Watanabe###
(1269712, 1269717)
 Recently, the superconductors community has witnessed an unsettled debateregarding whether iron-based superconductors, in particular FeSe andFeSe1-xSx<missing VAR>, are in the Bardeen-Cooper-Shrieffer (BCS) - Bose-Einsteincondensation (BE<missing VAR>C) crossover regime.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[169.0, 0.1, ',', 2],[172.0, 0.2, ',', 2],[175.0, 0.3, ',', 2],[219.0, 0.4, ',', 4],[228.0, 40, 'K', 4],[235.0, 2.7, 'times', 4]

(BCS)
###Onset Temperatures for Superconducting Fluctuations in Te-annealed FeTe$_{1-x}$Se$_x$ Single Crystals: Evidence for the BCS-BEC Crossover|Yu Uezono,Takumi Otsuka,Shotaro Hagisawa,Haruka Taniguchi,Michiaki Matsukawa,Takenori Fujii,Takao Watanabe###
(1269733, 1269737)
 Recently, the superconductors community has witnessed an unsettled debateregarding whether iron-based superconductors, in particular FeSe andFeSe1-xSx<missing VAR>, are in the Bardeen-Cooper-Shrieffer (BCS) - Bose-Einsteincondensation (BE<missing VAR>C) crossover regime.
Featurization successful!
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 0.1, ',', 2],[152.0, 0.2, ',', 2],[155.0, 0.3, ',', 2],[199.0, 0.4, ',', 4],[208.0, 40, 'K', 4],[215.0, 2.7, 'times', 4]

B
###Onset Temperatures for Superconducting Fluctuations in Te-annealed FeTe$_{1-x}$Se$_x$ Single Crystals: Evidence for the BCS-BEC Crossover|Yu Uezono,Takumi Otsuka,Shotaro Hagisawa,Haruka Taniguchi,Michiaki Matsukawa,Takenori Fujii,Takao Watanabe###
(1269749, 1269749)
 Recently, the superconductors community has witnessed an unsettled debateregarding whether iron-based superconductors, in particular FeSe andFeSe1-xSx<missing VAR>, are in the Bardeen-Cooper-Shrieffer (BCS) - Bose-Einsteincondensation (BE<missing VAR>C) crossover regime.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 0.1, ',', 2],[140.0, 0.2, ',', 2],[143.0, 0.3, ',', 2],[187.0, 0.4, ',', 4],[196.0, 40, 'K', 4],[203.0, 2.7, 'times', 4]

C
###Onset Temperatures for Superconducting Fluctuations in Te-annealed FeTe$_{1-x}$Se$_x$ Single Crystals: Evidence for the BCS-BEC Crossover|Yu Uezono,Takumi Otsuka,Shotaro Hagisawa,Haruka Taniguchi,Michiaki Matsukawa,Takenori Fujii,Takao Watanabe###
(1269751, 1269751)
 Recently, the superconductors community has witnessed an unsettled debateregarding whether iron-based superconductors, in particular FeSe andFeSe1-xSx<missing VAR>, are in the Bardeen-Cooper-Shrieffer (BCS) - Bose-Einsteincondensation (BE<missing VAR>C) crossover regime.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 0.1, ',', 2],[138.0, 0.2, ',', 2],[141.0, 0.3, ',', 2],[185.0, 0.4, ',', 4],[194.0, 40, 'K', 4],[201.0, 2.7, 'times', 4]

FeTe1-xSe
###Onset Temperatures for Superconducting Fluctuations in Te-annealed FeTe$_{1-x}$Se$_x$ Single Crystals: Evidence for the BCS-BEC Crossover|Yu Uezono,Takumi Otsuka,Shotaro Hagisawa,Haruka Taniguchi,Michiaki Matsukawa,Takenori Fujii,Takao Watanabe###
(1269770, 1269775)
 Nonetheless, one particular system,FeTe1-xSex<missing VAR>, has been less investigated in this regard owing to thescreening of its intrinsic superconducting properties by the inevitable ironexcess.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[111.0, 0.1, ',', 1],[114.0, 0.2, ',', 1],[117.0, 0.3, ',', 1],[161.0, 0.4, ',', 3],[170.0, 40, 'K', 3],[177.0, 2.7, 'times', 3]

Te
###Onset Temperatures for Superconducting Fluctuations in Te-annealed FeTe$_{1-x}$Se$_x$ Single Crystals: Evidence for the BCS-BEC Crossover|Yu Uezono,Takumi Otsuka,Shotaro Hagisawa,Haruka Taniguchi,Michiaki Matsukawa,Takenori Fujii,Takao Watanabe###
(1269865, 1269865)
 Herein, the onset temperatures for superconducting fluctuations(T<missing VAR>scf) are investigated by measuring the magnetoresistance (MR) ofTe-annealed, high-quality FeTe1-xSex<missing VAR> (x<missing VAR>  0.1, 0.2, 0.3, and 0.4)single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 0.1, ',', 0],[24.0, 0.2, ',', 0],[27.0, 0.3, ',', 0],[71.0, 0.4, ',', 2],[80.0, 40, 'K', 2],[87.0, 2.7, 'times', 2]

FeTe1-xSe
###Onset Temperatures for Superconducting Fluctuations in Te-annealed FeTe$_{1-x}$Se$_x$ Single Crystals: Evidence for the BCS-BEC Crossover|Yu Uezono,Takumi Otsuka,Shotaro Hagisawa,Haruka Taniguchi,Michiaki Matsukawa,Takenori Fujii,Takao Watanabe###
(1269874, 1269879)
 Herein, the onset temperatures for superconducting fluctuations(T<missing VAR>scf) are investigated by measuring the magnetoresistance (MR) ofTe-annealed, high-quality FeTe1-xSex<missing VAR> (x<missing VAR>  0.1, 0.2, 0.3, and 0.4)single crystals.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[7.0, 0.1, ',', 0],[10.0, 0.2, ',', 0],[13.0, 0.3, ',', 0],[57.0, 0.4, ',', 2],[66.0, 40, 'K', 2],[73.0, 2.7, 'times', 2]

FeTe1-xSe
###Onset Temperatures for Superconducting Fluctuations in Te-annealed FeTe$_{1-x}$Se$_x$ Single Crystals: Evidence for the BCS-BEC Crossover|Yu Uezono,Takumi Otsuka,Shotaro Hagisawa,Haruka Taniguchi,Michiaki Matsukawa,Takenori Fujii,Takao Watanabe###
(1269977, 1269982)
 This indicates that the superconductivityof the FeTe1-xSex<missing VAR> system is well within the BCS-BE<missing VAR>C crossover regime.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[91.0, 0.1, ',', 3],[88.0, 0.2, ',', 3],[85.0, 0.3, ',', 3],[41.0, 0.4, ',', 1],[32.0, 40, 'K', 1],[25.0, 2.7, 'times', 1]

BCS
###Onset Temperatures for Superconducting Fluctuations in Te-annealed FeTe$_{1-x}$Se$_x$ Single Crystals: Evidence for the BCS-BEC Crossover|Yu Uezono,Takumi Otsuka,Shotaro Hagisawa,Haruka Taniguchi,Michiaki Matsukawa,Takenori Fujii,Takao Watanabe###
(1269995, 1269997)
 This indicates that the superconductivityof the FeTe1-xSex<missing VAR> system is well within the BCS-BE<missing VAR>C crossover regime.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 0.1, ',', 3],[106.0, 0.2, ',', 3],[103.0, 0.3, ',', 3],[59.0, 0.4, ',', 1],[50.0, 40, 'K', 1],[43.0, 2.7, 'times', 1]

B
###Onset Temperatures for Superconducting Fluctuations in Te-annealed FeTe$_{1-x}$Se$_x$ Single Crystals: Evidence for the BCS-BEC Crossover|Yu Uezono,Takumi Otsuka,Shotaro Hagisawa,Haruka Taniguchi,Michiaki Matsukawa,Takenori Fujii,Takao Watanabe###
(1269999, 1269999)
 This indicates that the superconductivityof the FeTe1-xSex<missing VAR> system is well within the BCS-BE<missing VAR>C crossover regime.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 0.1, ',', 3],[110.0, 0.2, ',', 3],[107.0, 0.3, ',', 3],[63.0, 0.4, ',', 1],[54.0, 40, 'K', 1],[47.0, 2.7, 'times', 1]

C
###Onset Temperatures for Superconducting Fluctuations in Te-annealed FeTe$_{1-x}$Se$_x$ Single Crystals: Evidence for the BCS-BEC Crossover|Yu Uezono,Takumi Otsuka,Shotaro Hagisawa,Haruka Taniguchi,Michiaki Matsukawa,Takenori Fujii,Takao Watanabe###
(1270001, 1270001)
 This indicates that the superconductivityof the FeTe1-xSex<missing VAR> system is well within the BCS-BE<missing VAR>C crossover regime.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 0.1, ',', 3],[112.0, 0.2, ',', 3],[109.0, 0.3, ',', 3],[65.0, 0.4, ',', 1],[56.0, 40, 'K', 1],[49.0, 2.7, 'times', 1]

U
###Unidirectional orbital magnetoresistance in light metal/ferromagnet bilayers|Shilei Ding,Paul Noël,Gunasheel Kauwtilyaa Krishnaswamy,Pietro Gambardella###
(1270050, 1270050)
 We report the observation of a unidirectional magnetoresistance (UMR) thatoriginates from the nonequilibrium orbital momentum induced by an electriccurrent in a naturally oxidized Cu/Co bilayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu/Co
###Unidirectional orbital magnetoresistance in light metal/ferromagnet bilayers|Shilei Ding,Paul Noël,Gunasheel Kauwtilyaa Krishnaswamy,Pietro Gambardella###
(1270089, 1270091)
 We report the observation of a unidirectional magnetoresistance (UMR) thatoriginates from the nonequilibrium orbital momentum induced by an electriccurrent in a naturally oxidized Cu/Co bilayer.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

U
###Unidirectional orbital magnetoresistance in light metal/ferromagnet bilayers|Shilei Ding,Paul Noël,Gunasheel Kauwtilyaa Krishnaswamy,Pietro Gambardella###
(1270100, 1270100)
 The orbital-UMR scales with thetorque efficiency due to the orbital Rashba-Edelstein effect upon changing theCo thickness and temperature, reflecting their common origin.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Unidirectional orbital magnetoresistance in light metal/ferromagnet bilayers|Shilei Ding,Paul Noël,Gunasheel Kauwtilyaa Krishnaswamy,Pietro Gambardella###
(1270136, 1270136)
 The orbital-UMR scales with thetorque efficiency due to the orbital Rashba-Edelstein effect upon changing theCo thickness and temperature, reflecting their common origin.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

U
###Unidirectional orbital magnetoresistance in light metal/ferromagnet bilayers|Shilei Ding,Paul Noël,Gunasheel Kauwtilyaa Krishnaswamy,Pietro Gambardella###
(1270161, 1270161)
 We attribute theUMR to orbital-dependent electron scattering and orbital-to-spin conversion inthe ferromagnetic layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Unidirectional orbital magnetoresistance in light metal/ferromagnet bilayers|Shilei Ding,Paul Noël,Gunasheel Kauwtilyaa Krishnaswamy,Pietro Gambardella###
(1270195, 1270195)
 In contrast to the spin-current induced UMR, themagnon contribution to the orbital-UMR is absent in thin Co layers, which weascribe to the lack of coupling between low energy magnons and orbital current.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

U
###Unidirectional orbital magnetoresistance in light metal/ferromagnet bilayers|Shilei Ding,Paul Noël,Gunasheel Kauwtilyaa Krishnaswamy,Pietro Gambardella###
(1270209, 1270209)
 In contrast to the spin-current induced UMR, themagnon contribution to the orbital-UMR is absent in thin Co layers, which weascribe to the lack of coupling between low energy magnons and orbital current.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

U
###Unidirectional orbital magnetoresistance in light metal/ferromagnet bilayers|Shilei Ding,Paul Noël,Gunasheel Kauwtilyaa Krishnaswamy,Pietro Gambardella###
(1270227, 1270227)
 In contrast to the spin-current induced UMR, themagnon contribution to the orbital-UMR is absent in thin Co layers, which weascribe to the lack of coupling between low energy magnons and orbital current.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Unidirectional orbital magnetoresistance in light metal/ferromagnet bilayers|Shilei Ding,Paul Noël,Gunasheel Kauwtilyaa Krishnaswamy,Pietro Gambardella###
(1270239, 1270239)
 In contrast to the spin-current induced UMR, themagnon contribution to the orbital-UMR is absent in thin Co layers, which weascribe to the lack of coupling between low energy magnons and orbital current.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

U
###Unidirectional orbital magnetoresistance in light metal/ferromagnet bilayers|Shilei Ding,Paul Noël,Gunasheel Kauwtilyaa Krishnaswamy,Pietro Gambardella###
(1270287, 1270287)
The magnon contribution to the UMR emerges in Co layers thicker than about 5nm, which is comparable to the orbital-to-spin conversion length.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Unidirectional orbital magnetoresistance in light metal/ferromagnet bilayers|Shilei Ding,Paul Noël,Gunasheel Kauwtilyaa Krishnaswamy,Pietro Gambardella###
(1270295, 1270295)
The magnon contribution to the UMR emerges in Co layers thicker than about 5nm, which is comparable to the orbital-to-spin conversion length.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SS
###Tunneling magnetoresistance and spin-valley polarization of aperiodic magnetic silicene superlattices|P. Villasana-Mercado,J. G. Rojas-Briseño,S. Molina-Valdovinos,I. Rodríguez-Vargas###
(1270712, 1270713)
 Magnetic silicene superlattices (M<missing VAR>SSLs) are versatile structures withspin-valley polarization and tunneling magnetoresistance (TMR) capabilities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SS
###Tunneling magnetoresistance and spin-valley polarization of aperiodic magnetic silicene superlattices|P. Villasana-Mercado,J. G. Rojas-Briseño,S. Molina-Valdovinos,I. Rodríguez-Vargas###
(1270850, 1270851)
 Here, we show that aperiodicity can beused to improve the spin-valley polarization and TMR by reducing thecharacteristic conductance oscillations of periodic M<missing VAR>SSLs (P-M<missing VAR>SSLs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Tunneling magnetoresistance and spin-valley polarization of aperiodic magnetic silicene superlattices|P. Villasana-Mercado,J. G. Rojas-Briseño,S. Molina-Valdovinos,I. Rodríguez-Vargas###
(1270855, 1270855)
 Here, we show that aperiodicity can beused to improve the spin-valley polarization and TMR by reducing thecharacteristic conductance oscillations of periodic M<missing VAR>SSLs (P-M<missing VAR>SSLs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SS
###Tunneling magnetoresistance and spin-valley polarization of aperiodic magnetic silicene superlattices|P. Villasana-Mercado,J. G. Rojas-Briseño,S. Molina-Valdovinos,I. Rodríguez-Vargas###
(1270858, 1270859)
 Here, we show that aperiodicity can beused to improve the spin-valley polarization and TMR by reducing thecharacteristic conductance oscillations of periodic M<missing VAR>SSLs (P-M<missing VAR>SSLs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Tunneling magnetoresistance and spin-valley polarization of aperiodic magnetic silicene superlattices|P. Villasana-Mercado,J. G. Rojas-Briseño,S. Molina-Valdovinos,I. Rodríguez-Vargas###
(1270871, 1270871)
 Using theLandauer-Buttiker formalism and the transfer matrix method, we investigatethe spin-valley polarization and the TMR of Fibonacci (F-) and Thue-Morse (TM-)M<missing VAR>SSLs as typical aperiodic superlattices.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Tunneling magnetoresistance and spin-valley polarization of aperiodic magnetic silicene superlattices|P. Villasana-Mercado,J. G. Rojas-Briseño,S. Molina-Valdovinos,I. Rodríguez-Vargas###
(1270913, 1270913)
 Using theLandauer-Buttiker formalism and the transfer matrix method, we investigatethe spin-valley polarization and the TMR of Fibonacci (F-) and Thue-Morse (TM-)M<missing VAR>SSLs as typical aperiodic superlattices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SS
###Tunneling magnetoresistance and spin-valley polarization of aperiodic magnetic silicene superlattices|P. Villasana-Mercado,J. G. Rojas-Briseño,S. Molina-Valdovinos,I. Rodríguez-Vargas###
(1270931, 1270932)
 Using theLandauer-Buttiker formalism and the transfer matrix method, we investigatethe spin-valley polarization and the TMR of Fibonacci (F-) and Thue-Morse (TM-)M<missing VAR>SSLs as typical aperiodic superlattices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Tunneling magnetoresistance and spin-valley polarization of aperiodic magnetic silicene superlattices|P. Villasana-Mercado,J. G. Rojas-Briseño,S. Molina-Valdovinos,I. Rodríguez-Vargas###
(1270983, 1270983)
 In particular, TM-M<missing VAR>SSLs reduce considerably the conductanceoscillations giving rise to two well-defined spin-valley polarization statesand a better TMR than F- and P-M<missing VAR>SSLs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SS
###Tunneling magnetoresistance and spin-valley polarization of aperiodic magnetic silicene superlattices|P. Villasana-Mercado,J. G. Rojas-Briseño,S. Molina-Valdovinos,I. Rodríguez-Vargas###
(1270992, 1270993)
 In particular, TM-M<missing VAR>SSLs reduce considerably the conductanceoscillations giving rise to two well-defined spin-valley polarization statesand a better TMR than F- and P-M<missing VAR>SSLs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Tunneling magnetoresistance and spin-valley polarization of aperiodic magnetic silicene superlattices|P. Villasana-Mercado,J. G. Rojas-Briseño,S. Molina-Valdovinos,I. Rodríguez-Vargas###
(1271040, 1271040)
 In particular, TM-M<missing VAR>SSLs reduce considerably the conductanceoscillations giving rise to two well-defined spin-valley polarization statesand a better TMR than F- and P-M<missing VAR>SSLs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Tunneling magnetoresistance and spin-valley polarization of aperiodic magnetic silicene superlattices|P. Villasana-Mercado,J. G. Rojas-Briseño,S. Molina-Valdovinos,I. Rodríguez-Vargas###
(1271045, 1271045)
 In particular, TM-M<missing VAR>SSLs reduce considerably the conductanceoscillations giving rise to two well-defined spin-valley polarization statesand a better TMR than F- and P-M<missing VAR>SSLs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SS
###Tunneling magnetoresistance and spin-valley polarization of aperiodic magnetic silicene superlattices|P. Villasana-Mercado,J. G. Rojas-Briseño,S. Molina-Valdovinos,I. Rodríguez-Vargas###
(1271048, 1271049)
 In particular, TM-M<missing VAR>SSLs reduce considerably the conductanceoscillations giving rise to two well-defined spin-valley polarization statesand a better TMR than F- and P-M<missing VAR>SSLs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Tunneling magnetoresistance and spin-valley polarization of aperiodic magnetic silicene superlattices|P. Villasana-Mercado,J. G. Rojas-Briseño,S. Molina-Valdovinos,I. Rodríguez-Vargas###
(1271053, 1271053)
 F-M<missing VAR>SSLs also improve the spin-valleypolarization and TMR, however they depend strongly on the parity of thesuperlattice generation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SS
###Tunneling magnetoresistance and spin-valley polarization of aperiodic magnetic silicene superlattices|P. Villasana-Mercado,J. G. Rojas-Briseño,S. Molina-Valdovinos,I. Rodríguez-Vargas###
(1271056, 1271057)
 F-M<missing VAR>SSLs also improve the spin-valleypolarization and TMR, however they depend strongly on the parity of thesuperlattice generation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Perspectives on Antiferromagnetic Spintronics|Kang Wang,Vineetha Bheemarasetty,Junhang Duan,Shiyu Zhou,Gang Xiao###
(1271345, 1271345)
 In this Perspective article,we will discuss the fundamental physics of magnetic structures inantiferromagnets and their interactions with external stimuli such as spincurrent, voltage, and magnons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###High-field and high-temperature magnetoresistance reveals the superconducting behaviour of the stacking faults in multilayer graphene|Christian E. Precker,José Barzola-Quiquia,Mun K. Chan,Marcelo Jaime,Pablo D. Esquinazi###
(1271496, 1271496)
 In spite of 40 years of experimental studies and several theoreticalproposals, an overall interpretation of the complex behavior of themagnetoresistance (MR) of multilayer graphene, i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 40, 'years', 0]

B
###High-field and high-temperature magnetoresistance reveals the superconducting behaviour of the stacking faults in multilayer graphene|Christian E. Precker,José Barzola-Quiquia,Mun K. Chan,Marcelo Jaime,Pablo D. Esquinazi###
(1271568, 1271568)
 graphite, at high fields(B lesssim 70T) and in a broad temperature range is still lacking.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 40, 'years', 1]

S
###High-field and high-temperature magnetoresistance reveals the superconducting behaviour of the stacking faults in multilayer graphene|Christian E. Precker,José Barzola-Quiquia,Mun K. Chan,Marcelo Jaime,Pablo D. Esquinazi###
(1271621, 1271621)
 Part ofthe complexity is due to the contribution of stacking faults (SFs), which mostof thick enough multilayer graphene samples have.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 40, 'years', 2]

SF
###High-field and high-temperature magnetoresistance reveals the superconducting behaviour of the stacking faults in multilayer graphene|Christian E. Precker,José Barzola-Quiquia,Mun K. Chan,Marcelo Jaime,Pablo D. Esquinazi###
(1271667, 1271668)
 We propose a procedure thatallows us to extract the SF contribution to the MR we have measured at 0.48Kleq T<missing VAR> leq 250K and 0T<missing VAR>leq B lesssim 65T<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 40, 'years', 3]

K
###High-field and high-temperature magnetoresistance reveals the superconducting behaviour of the stacking faults in multilayer graphene|Christian E. Precker,José Barzola-Quiquia,Mun K. Chan,Marcelo Jaime,Pablo D. Esquinazi###
(1271688, 1271688)
 We propose a procedure thatallows us to extract the SF contribution to the MR we have measured at 0.48Kleq T<missing VAR> leq 250K and 0T<missing VAR>leq B lesssim 65T<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[187.0, 40, 'years', 3]

K
###High-field and high-temperature magnetoresistance reveals the superconducting behaviour of the stacking faults in multilayer graphene|Christian E. Precker,José Barzola-Quiquia,Mun K. Chan,Marcelo Jaime,Pablo D. Esquinazi###
(1271698, 1271698)
 We propose a procedure thatallows us to extract the SF contribution to the MR we have measured at 0.48Kleq T<missing VAR> leq 250K and 0T<missing VAR>leq B lesssim 65T<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[197.0, 40, 'years', 3]

B
###High-field and high-temperature magnetoresistance reveals the superconducting behaviour of the stacking faults in multilayer graphene|Christian E. Precker,José Barzola-Quiquia,Mun K. Chan,Marcelo Jaime,Pablo D. Esquinazi###
(1271706, 1271706)
 We propose a procedure thatallows us to extract the SF contribution to the MR we have measured at 0.48Kleq T<missing VAR> leq 250K and 0T<missing VAR>leq B lesssim 65T<missing VAR>.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, 40, 'years', 3]

S
###High-field and high-temperature magnetoresistance reveals the superconducting behaviour of the stacking faults in multilayer graphene|Christian E. Precker,José Barzola-Quiquia,Mun K. Chan,Marcelo Jaime,Pablo D. Esquinazi###
(1271736, 1271736)
 We found that the MRbehavior of part of the SFs is similar to that of granular superconductors witha superconducting critical temperature Tc sim  350K, in agreement withrecent publications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[235.0, 40, 'years', 4]

K
###High-field and high-temperature magnetoresistance reveals the superconducting behaviour of the stacking faults in multilayer graphene|Christian E. Precker,José Barzola-Quiquia,Mun K. Chan,Marcelo Jaime,Pablo D. Esquinazi###
(1271771, 1271771)
 We found that the MRbehavior of part of the SFs is similar to that of granular superconductors witha superconducting critical temperature Tc sim  350K, in agreement withrecent publications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[270.0, 40, 'years', 4]

S
###High-field and high-temperature magnetoresistance reveals the superconducting behaviour of the stacking faults in multilayer graphene|Christian E. Precker,José Barzola-Quiquia,Mun K. Chan,Marcelo Jaime,Pablo D. Esquinazi###
(1271824, 1271824)
 The measurements were done on a multilayer graphene TEMlamella, contacting the edges of the two-dimensional SFs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[323.0, 40, 'years', 5]

S
###Local density of states as a probe for tunneling magnetoresistance effect: application to ferrimagnetic tunnel junctions|Katsuhiro Tanaka,Takuya Nomoto,Ryotaro Arita###
(1271965, 1271965)
 First, taking aconventional ferromagnetic MTJ as an example, we show that the product of thelocal density of states (LDOS) at the center of the barrier traces the TMReffect qualitatively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OS
###Local density of states as a probe for tunneling magnetoresistance effect: application to ferrimagnetic tunnel junctions|Katsuhiro Tanaka,Takuya Nomoto,Ryotaro Arita###
(1271998, 1271999)
 The LDOS inside the barrier has the information on theelectrodes and the electron tunneling through the barrier, which enables us toeasily evaluate the tunneling conductance more precisely than the conventionalJullieres<missing VAR> picture.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OS
###Local density of states as a probe for tunneling magnetoresistance effect: application to ferrimagnetic tunnel junctions|Katsuhiro Tanaka,Takuya Nomoto,Ryotaro Arita###
(1272173, 1272174)
 We find that the TMR effect in theferrimagnetic and antiferromagnetic MTJs changes depending on the interfacialmagnetic structures originating from the sublattice structure, which can alsobe captured by the LDOS.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Comprehensive Demonstration of Spin-Hall Hanle Effects in Epitaxial Pt Thin Films|Jing Li,Andrew H. Comstock,Dali Sun,Xiaoshan Xu###
(1272280, 1272280)
Comprehensive Demonstration of Spin-Hall Hanle Effects in Epitaxial Pt Thin Films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Comprehensive Demonstration of Spin-Hall Hanle Effects in Epitaxial Pt Thin Films|Jing Li,Andrew H. Comstock,Dali Sun,Xiaoshan Xu###
(1272314, 1272314)
 We demonstrate a nonlinear Hall effect due to the boundary spin accumulationin Pt films grown on Al2O3 substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Al2O3
###Comprehensive Demonstration of Spin-Hall Hanle Effects in Epitaxial Pt Thin Films|Jing Li,Andrew H. Comstock,Dali Sun,Xiaoshan Xu###
(1272322, 1272325)
 We demonstrate a nonlinear Hall effect due to the boundary spin accumulationin Pt films grown on Al2O3 substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SHH
###Comprehensive Demonstration of Spin-Hall Hanle Effects in Epitaxial Pt Thin Films|Jing Li,Andrew H. Comstock,Dali Sun,Xiaoshan Xu###
(1272420, 1272422)
 This Hall effect and the previouslydemonstrated Hanle magnetoresistance provide a complete picture of thespin-precession control of the spin and charge transport at the boundary of aspin-orbit coupled material, which we refer to as spin-Hall Hanle effects(SHHE).
Featurization terminated normally.
0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SHH
###Comprehensive Demonstration of Spin-Hall Hanle Effects in Epitaxial Pt Thin Films|Jing Li,Andrew H. Comstock,Dali Sun,Xiaoshan Xu###
(1272437, 1272439)
 We also show that the SHHE<missing VAR> can be employed to measure the spindiffusion length, the spin-Hall angle, and the spin relaxation time of heavymetal without the need of magnetic interface or the input from othermeasurements.
Featurization terminated normally.
0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SHH
###Comprehensive Demonstration of Spin-Hall Hanle Effects in Epitaxial Pt Thin Films|Jing Li,Andrew H. Comstock,Dali Sun,Xiaoshan Xu###
(1272522, 1272524)
 The comprehensive demonstration of SHHE<missing VAR> in such a simple systemsuggests they may be ubiquitous and needs to be considered for unravelling thespin and charge transport in more complex thin film structures of spin-orbitcoupled materials.
Featurization terminated normally.
0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

InBi
###Magnetotransport Properties and Fermi Surface Topology of Nodal line Semimetal InBi|Sambhab Dan,Kuldeep Kargeti,R. C. Sahoo,Shovan Dan,Debarati Pal,Sunil Verma,Sujay Chakravarty,S. K. Panda,S Patil###
(1272625, 1272626)
Magnetotransport Properties and Fermi Surface Topology of Nodal line Semimetal InBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magnetotransport Properties and Fermi Surface Topology of Nodal line Semimetal InBi|Sambhab Dan,Kuldeep Kargeti,R. C. Sahoo,Shovan Dan,Debarati Pal,Sunil Verma,Sujay Chakravarty,S. K. Panda,S Patil###
(1272629, 1272629)
 In the present study, we have discussed the up-turn behavior in theresistivity pattern of the topological nodal line semimetal InBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

InBi
###Magnetotransport Properties and Fermi Surface Topology of Nodal line Semimetal InBi|Sambhab Dan,Kuldeep Kargeti,R. C. Sahoo,Shovan Dan,Debarati Pal,Sunil Verma,Sujay Chakravarty,S. K. Panda,S Patil###
(1272673, 1272674)
 In the present study, we have discussed the up-turn behavior in theresistivity pattern of the topological nodal line semimetal InBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Magnetotransport Properties and Fermi Surface Topology of Nodal line Semimetal InBi|Sambhab Dan,Kuldeep Kargeti,R. C. Sahoo,Shovan Dan,Debarati Pal,Sunil Verma,Sujay Chakravarty,S. K. Panda,S Patil###
(1272795, 1272795)
 Moreover, from the study ofSubhnikov-de Haas (SdH) oscillation and density functional theory (DFT), weobtained the complete three-dimensional (3D) Fermi surface topology of thecompound InBi.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

InBi
###Magnetotransport Properties and Fermi Surface Topology of Nodal line Semimetal InBi|Sambhab Dan,Kuldeep Kargeti,R. C. Sahoo,Shovan Dan,Debarati Pal,Sunil Verma,Sujay Chakravarty,S. K. Panda,S Patil###
(1272846, 1272847)
 Moreover, from the study ofSubhnikov-de Haas (SdH) oscillation and density functional theory (DFT), weobtained the complete three-dimensional (3D) Fermi surface topology of thecompound InBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CNP
###Evidence of a compensated semimetal with electronic correlations at the CNP of twisted double bilayer graphene|Ayan Ghosh,Souvik Chakraborty,Unmesh Ghorai,Arup Kumar Paul,K. Watanabe,T. Taniguchi,Rajdeep Sensarma,Anindya Das###
(1272949, 1272951)
Evidence of a compensated semimetal with electronic correlations at the CNP of twisted double bilayer graphene.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[252.0, 2500, '%', 3]

B
###Evidence of a compensated semimetal with electronic correlations at the CNP of twisted double bilayer graphene|Ayan Ghosh,Souvik Chakraborty,Unmesh Ghorai,Arup Kumar Paul,K. Watanabe,T. Taniguchi,Rajdeep Sensarma,Anindya Das###
(1272981, 1272981)
 Recently, magic-angle twisted bilayer graphene (MATBLG) has shown theemergence of various interaction-driven novel quantum phases at thecommensurate fillings of the moire<missing VAR> superlattice, while the charge neutralitypoint (CNP) remains mostly a vanilla insulator.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[222.0, 2500, '%', 2]

(CNP)
###Evidence of a compensated semimetal with electronic correlations at the CNP of twisted double bilayer graphene|Ayan Ghosh,Souvik Chakraborty,Unmesh Ghorai,Arup Kumar Paul,K. Watanabe,T. Taniguchi,Rajdeep Sensarma,Anindya Das###
(1273039, 1273043)
 Recently, magic-angle twisted bilayer graphene (MATBLG) has shown theemergence of various interaction-driven novel quantum phases at thecommensurate fillings of the moire<missing VAR> superlattice, while the charge neutralitypoint (CNP) remains mostly a vanilla insulator.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 2500, '%', 2]

CNP
###Evidence of a compensated semimetal with electronic correlations at the CNP of twisted double bilayer graphene|Ayan Ghosh,Souvik Chakraborty,Unmesh Ghorai,Arup Kumar Paul,K. Watanabe,T. Taniguchi,Rajdeep Sensarma,Anindya Das###
(1273082, 1273084)
 Here, we show an emerging phaseof nearly compensated semimetallicity at the CNP of twisted double bilayergraphene (TDBLG), a close cousin of MATBLG, with signatures of electroniccorrelation.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 2500, '%', 1]

B
###Evidence of a compensated semimetal with electronic correlations at the CNP of twisted double bilayer graphene|Ayan Ghosh,Souvik Chakraborty,Unmesh Ghorai,Arup Kumar Paul,K. Watanabe,T. Taniguchi,Rajdeep Sensarma,Anindya Das###
(1273100, 1273100)
 Here, we show an emerging phaseof nearly compensated semimetallicity at the CNP of twisted double bilayergraphene (TDBLG), a close cousin of MATBLG, with signatures of electroniccorrelation.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 2500, '%', 1]

B
###Evidence of a compensated semimetal with electronic correlations at the CNP of twisted double bilayer graphene|Ayan Ghosh,Souvik Chakraborty,Unmesh Ghorai,Arup Kumar Paul,K. Watanabe,T. Taniguchi,Rajdeep Sensarma,Anindya Das###
(1273117, 1273117)
 Here, we show an emerging phaseof nearly compensated semimetallicity at the CNP of twisted double bilayergraphene (TDBLG), a close cousin of MATBLG, with signatures of electroniccorrelation.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 2500, '%', 1]

CNP
###Evidence of a compensated semimetal with electronic correlations at the CNP of twisted double bilayer graphene|Ayan Ghosh,Souvik Chakraborty,Unmesh Ghorai,Arup Kumar Paul,K. Watanabe,T. Taniguchi,Rajdeep Sensarma,Anindya Das###
(1273209, 1273211)
 Using electrical and thermal transport, we find almost two ordersof magnitude enhancement of the thermopower in magnetic fields much smallerthan the extreme quantum limit, accompanied by a large magnetoresistance(sim2500%) at CNP.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 2500, '%', 0]

B
###Evidence of a compensated semimetal with electronic correlations at the CNP of twisted double bilayer graphene|Ayan Ghosh,Souvik Chakraborty,Unmesh Ghorai,Arup Kumar Paul,K. Watanabe,T. Taniguchi,Rajdeep Sensarma,Anindya Das###
(1273228, 1273228)
 This provides indisputable experimental evidence that TDBLGnear CNP is a compensated semimetal.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 2500, '%', 1]

CNP
###Evidence of a compensated semimetal with electronic correlations at the CNP of twisted double bilayer graphene|Ayan Ghosh,Souvik Chakraborty,Unmesh Ghorai,Arup Kumar Paul,K. Watanabe,T. Taniguchi,Rajdeep Sensarma,Anindya Das###
(1273235, 1273237)
 This provides indisputable experimental evidence that TDBLGnear CNP is a compensated semimetal.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 2500, '%', 1]

CNP
###Evidence of a compensated semimetal with electronic correlations at the CNP of twisted double bilayer graphene|Ayan Ghosh,Souvik Chakraborty,Unmesh Ghorai,Arup Kumar Paul,K. Watanabe,T. Taniguchi,Rajdeep Sensarma,Anindya Das###
(1273301, 1273303)
 A recent theorypredicts the formation of an excitonic metal near CNP, where small electron andhole pockets coexist.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 2500, '%', 3]

(NW)
###3D Interconnected Magnetic Nanowire Networks as Potential Integrated Multistate Memristors|Dhritiman Bhattacharya,Zhijie Chen,Christopher J. Jensen,Chen Liu,Edward C. Burks,Dustin A. Gilbert,Xixiang Zhang,Gen Yin,Kai Liu###
(1273388, 1273391)
 Interconnected magnetic nanowire (NW) networks offer a promising platform for3-dimensional (3D) information storage and integrated neuromorphic computing.
Featurization successful!
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###3D Interconnected Magnetic Nanowire Networks as Potential Integrated Multistate Memristors|Dhritiman Bhattacharya,Zhijie Chen,Christopher J. Jensen,Chen Liu,Edward C. Burks,Dustin A. Gilbert,Xixiang Zhang,Gen Yin,Kai Liu###
(1273449, 1273449)
Here we report discrete propagation of magnetic states in interconnected Conanowire networks driven by magnetic field and current, manifested in distinctmagnetoresistance (MR) features.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###3D Interconnected Magnetic Nanowire Networks as Potential Integrated Multistate Memristors|Dhritiman Bhattacharya,Zhijie Chen,Christopher J. Jensen,Chen Liu,Edward C. Burks,Dustin A. Gilbert,Xixiang Zhang,Gen Yin,Kai Liu###
(1273486, 1273486)
 In these networks, when only a fewinterconnected NWs were measured, multiple MR kinks and local minima wereobserved, including a significant minimum at a positive field during thedescending field sweep.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###3D Interconnected Magnetic Nanowire Networks as Potential Integrated Multistate Memristors|Dhritiman Bhattacharya,Zhijie Chen,Christopher J. Jensen,Chen Liu,Edward C. Burks,Dustin A. Gilbert,Xixiang Zhang,Gen Yin,Kai Liu###
(1273504, 1273504)
 In these networks, when only a fewinterconnected NWs were measured, multiple MR kinks and local minima wereobserved, including a significant minimum at a positive field during thedescending field sweep.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###3D Interconnected Magnetic Nanowire Networks as Potential Integrated Multistate Memristors|Dhritiman Bhattacharya,Zhijie Chen,Christopher J. Jensen,Chen Liu,Edward C. Burks,Dustin A. Gilbert,Xixiang Zhang,Gen Yin,Kai Liu###
(1273586, 1273586)
 Micromagnetic simulations showed that this unusualfeature was due to domain wall (D<missing VAR>W) pinning at the NW intersections, which wasconfirmed by off-axis electron holography imaging.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NW
###3D Interconnected Magnetic Nanowire Networks as Potential Integrated Multistate Memristors|Dhritiman Bhattacharya,Zhijie Chen,Christopher J. Jensen,Chen Liu,Edward C. Burks,Dustin A. Gilbert,Xixiang Zhang,Gen Yin,Kai Liu###
(1273595, 1273596)
 Micromagnetic simulations showed that this unusualfeature was due to domain wall (D<missing VAR>W) pinning at the NW intersections, which wasconfirmed by off-axis electron holography imaging.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###3D Interconnected Magnetic Nanowire Networks as Potential Integrated Multistate Memristors|Dhritiman Bhattacharya,Zhijie Chen,Christopher J. Jensen,Chen Liu,Edward C. Burks,Dustin A. Gilbert,Xixiang Zhang,Gen Yin,Kai Liu###
(1273621, 1273621)
 In a complex network withmany intersections, sequential switching of nanowire sections separated byinterconnects was observed, along with stochastic characteristics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mg3Bi2
###A topological transition-induced giant transverse thermoelectric effect in polycrystalline Dirac semimetal Mg3Bi2|Tao Feng,Panshuo Wang,Zhijia Han,Liang Zhou,Zhiran Wang,Wenqing Zhang,Qihang Liu,Weishu Liu###
(1273762, 1273765)
A topological transition-induced giant transverse thermoelectric effect in polycrystalline Dirac semimetal Mg3Bi2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[176.0, 16600, '%', 3]

Mn
###A topological transition-induced giant transverse thermoelectric effect in polycrystalline Dirac semimetal Mg3Bi2|Tao Feng,Panshuo Wang,Zhijia Han,Liang Zhou,Zhiran Wang,Wenqing Zhang,Qihang Liu,Weishu Liu###
(1273882, 1273882)
 Herein, we demonstrate a topologicaltransition-induced giant transverse thermoelectric effect in polycrystallineMn-doped Mg3deltaBi2 material, which has a competitively large transversethermopower (617 u<missing VAR>V/K), power factor (20393 u<missing VAR>Wm-1K-2), magnetoresistance(16600%), and electronic mobility (35280cm2V-1S-1).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 16600, '%', 0]

Mg3
###A topological transition-induced giant transverse thermoelectric effect in polycrystalline Dirac semimetal Mg3Bi2|Tao Feng,Panshuo Wang,Zhijia Han,Liang Zhou,Zhiran Wang,Wenqing Zhang,Qihang Liu,Weishu Liu###
(1273886, 1273887)
 Herein, we demonstrate a topologicaltransition-induced giant transverse thermoelectric effect in polycrystallineMn-doped Mg3deltaBi2 material, which has a competitively large transversethermopower (617 u<missing VAR>V/K), power factor (20393 u<missing VAR>Wm-1K-2), magnetoresistance(16600%), and electronic mobility (35280cm2V-1S-1).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 16600, '%', 0]

Bi2
###A topological transition-induced giant transverse thermoelectric effect in polycrystalline Dirac semimetal Mg3Bi2|Tao Feng,Panshuo Wang,Zhijia Han,Liang Zhou,Zhiran Wang,Wenqing Zhang,Qihang Liu,Weishu Liu###
(1273889, 1273890)
 Herein, we demonstrate a topologicaltransition-induced giant transverse thermoelectric effect in polycrystallineMn-doped Mg3deltaBi2 material, which has a competitively large transversethermopower (617 u<missing VAR>V/K), power factor (20393 u<missing VAR>Wm-1K-2), magnetoresistance(16600%), and electronic mobility (35280cm2V-1S-1).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 16600, '%', 0]

K
###A topological transition-induced giant transverse thermoelectric effect in polycrystalline Dirac semimetal Mg3Bi2|Tao Feng,Panshuo Wang,Zhijia Han,Liang Zhou,Zhiran Wang,Wenqing Zhang,Qihang Liu,Weishu Liu###
(1273916, 1273916)
 Herein, we demonstrate a topologicaltransition-induced giant transverse thermoelectric effect in polycrystallineMn-doped Mg3deltaBi2 material, which has a competitively large transversethermopower (617 u<missing VAR>V/K), power factor (20393 u<missing VAR>Wm-1K-2), magnetoresistance(16600%), and electronic mobility (35280cm2V-1S-1).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 16600, '%', 0]

K
###A topological transition-induced giant transverse thermoelectric effect in polycrystalline Dirac semimetal Mg3Bi2|Tao Feng,Panshuo Wang,Zhijia Han,Liang Zhou,Zhiran Wang,Wenqing Zhang,Qihang Liu,Weishu Liu###
(1273931, 1273931)
 Herein, we demonstrate a topologicaltransition-induced giant transverse thermoelectric effect in polycrystallineMn-doped Mg3deltaBi2 material, which has a competitively large transversethermopower (617 u<missing VAR>V/K), power factor (20393 u<missing VAR>Wm-1K-2), magnetoresistance(16600%), and electronic mobility (35280cm2V-1S-1).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 16600, '%', 0]

V
###A topological transition-induced giant transverse thermoelectric effect in polycrystalline Dirac semimetal Mg3Bi2|Tao Feng,Panshuo Wang,Zhijia Han,Liang Zhou,Zhiran Wang,Wenqing Zhang,Qihang Liu,Weishu Liu###
(1273956, 1273956)
 Herein, we demonstrate a topologicaltransition-induced giant transverse thermoelectric effect in polycrystallineMn-doped Mg3deltaBi2 material, which has a competitively large transversethermopower (617 u<missing VAR>V/K), power factor (20393 u<missing VAR>Wm-1K-2), magnetoresistance(16600%), and electronic mobility (35280cm2V-1S-1).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 16600, '%', 0]

S
###A topological transition-induced giant transverse thermoelectric effect in polycrystalline Dirac semimetal Mg3Bi2|Tao Feng,Panshuo Wang,Zhijia Han,Liang Zhou,Zhiran Wang,Wenqing Zhang,Qihang Liu,Weishu Liu###
(1273959, 1273959)
 Herein, we demonstrate a topologicaltransition-induced giant transverse thermoelectric effect in polycrystallineMn-doped Mg3deltaBi2 material, which has a competitively large transversethermopower (617 u<missing VAR>V/K), power factor (20393 u<missing VAR>Wm-1K-2), magnetoresistance(16600%), and electronic mobility (35280cm2V-1S-1).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 16600, '%', 0]

Mn
###A topological transition-induced giant transverse thermoelectric effect in polycrystalline Dirac semimetal Mg3Bi2|Tao Feng,Panshuo Wang,Zhijia Han,Liang Zhou,Zhiran Wang,Wenqing Zhang,Qihang Liu,Weishu Liu###
(1274003, 1274003)
 The high performance istriggered by the modulation of chemical pressure and disorder effects in thepresence of Mn doping, which induces the transition from a topologicalinsulator to a Dirac semimetal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 16600, '%', 1]

Mn
###A topological transition-induced giant transverse thermoelectric effect in polycrystalline Dirac semimetal Mg3Bi2|Tao Feng,Panshuo Wang,Zhijia Han,Liang Zhou,Zhiran Wang,Wenqing Zhang,Qihang Liu,Weishu Liu###
(1274042, 1274042)
 The high-performance polycrystalline Mn-dopedMg3delta Bi2 described in this work robustly boosts transversethermoelectric effect through topological phase transition, paving a new avenuefor the material design of transverse thermoelectricity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 16600, '%', 2]

Mg3
###A topological transition-induced giant transverse thermoelectric effect in polycrystalline Dirac semimetal Mg3Bi2|Tao Feng,Panshuo Wang,Zhijia Han,Liang Zhou,Zhiran Wang,Wenqing Zhang,Qihang Liu,Weishu Liu###
(1274047, 1274048)
 The high-performance polycrystalline Mn-dopedMg3delta Bi2 described in this work robustly boosts transversethermoelectric effect through topological phase transition, paving a new avenuefor the material design of transverse thermoelectricity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 16600, '%', 2]

Bi2
###A topological transition-induced giant transverse thermoelectric effect in polycrystalline Dirac semimetal Mg3Bi2|Tao Feng,Panshuo Wang,Zhijia Han,Liang Zhou,Zhiran Wang,Wenqing Zhang,Qihang Liu,Weishu Liu###
(1274051, 1274052)
 The high-performance polycrystalline Mn-dopedMg3delta Bi2 described in this work robustly boosts transversethermoelectric effect through topological phase transition, paving a new avenuefor the material design of transverse thermoelectricity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 16600, '%', 2]

GdSb
###Tuning the Band Topology of GdSb by Epitaxial Strain|Hadass S. Inbar,Dai Q. Ho,Shouvik Chatterjee,Aaron N. Engel,Shoaib Khalid,Connor P. Dempsey,Mihir Pendharkar,Yu Hao Chang,Shinichi Nishihaya,Alexei V. Fedorov,Donghui Lu,Makoto Hashimoto,Dan Read,Anderson Janotti,Christopher J. Palmstrøm###
(1274124, 1274125)
Tuning the Band Topology of GdSb by Epitaxial Strain.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Tuning the Band Topology of GdSb by Epitaxial Strain|Hadass S. Inbar,Dai Q. Ho,Shouvik Chatterjee,Aaron N. Engel,Shoaib Khalid,Connor P. Dempsey,Mihir Pendharkar,Yu Hao Chang,Shinichi Nishihaya,Alexei V. Fedorov,Donghui Lu,Makoto Hashimoto,Dan Read,Anderson Janotti,Christopher J. Palmstrøm###
(1274144, 1274144)
 Rare-earth monopnictide (RE-V) semimetal crystals subjected to hydrostaticpressure have shown interesting trends in magnetoresistance, magnetic ordering,and superconductivity, with theory predicting pressure-induced band inversion.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GdSb
###Tuning the Band Topology of GdSb by Epitaxial Strain|Hadass S. Inbar,Dai Q. Ho,Shouvik Chatterjee,Aaron N. Engel,Shoaib Khalid,Connor P. Dempsey,Mihir Pendharkar,Yu Hao Chang,Shinichi Nishihaya,Alexei V. Fedorov,Donghui Lu,Makoto Hashimoto,Dan Read,Anderson Janotti,Christopher J. Palmstrøm###
(1274268, 1274269)
 This work studies the evolution of bandtopology in biaxially strained GdSb (001) epitaxial films using angle-resolvedphotoemission spectroscopy (ARPES) and density functional theory (DFT).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Tuning the Band Topology of GdSb by Epitaxial Strain|Hadass S. Inbar,Dai Q. Ho,Shouvik Chatterjee,Aaron N. Engel,Shoaib Khalid,Connor P. Dempsey,Mihir Pendharkar,Yu Hao Chang,Shinichi Nishihaya,Alexei V. Fedorov,Donghui Lu,Makoto Hashimoto,Dan Read,Anderson Janotti,Christopher J. Palmstrøm###
(1274295, 1274295)
 This work studies the evolution of bandtopology in biaxially strained GdSb (001) epitaxial films using angle-resolvedphotoemission spectroscopy (ARPES) and density functional theory (DFT).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Tuning the Band Topology of GdSb by Epitaxial Strain|Hadass S. Inbar,Dai Q. Ho,Shouvik Chatterjee,Aaron N. Engel,Shoaib Khalid,Connor P. Dempsey,Mihir Pendharkar,Yu Hao Chang,Shinichi Nishihaya,Alexei V. Fedorov,Donghui Lu,Makoto Hashimoto,Dan Read,Anderson Janotti,Christopher J. Palmstrøm###
(1274407, 1274407)
 The conduction and valenceband shifts seen in DFT and ARPES measurements are explained by a tight-bindingmodel that accounts for the orbital symmetry of each band.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HgCr2Se4
###Electronic Origin of Half-metal to Semiconductor Transition and Colossal Magnetoresistance in Spinel HgCr2Se4|Aiji Liang,Zhilin Li,Shihao Zhang,Shucui Sun,Shuai Liu,Cheng Chen,Haifeng Yang,Shengtao Cui,Sung-Kwan Mo,Shuai Yang,Yongqing Li,Meixiao Wang,Lexian Yang,Jianpeng Liu,Zhongkai Liu,Yulin Chen###
(1274513, 1274517)
Electronic Origin of Half-metal to Semiconductor Transition and Colossal Magnetoresistance in Spinel HgCr2Se4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HgCr2Se4
###Electronic Origin of Half-metal to Semiconductor Transition and Colossal Magnetoresistance in Spinel HgCr2Se4|Aiji Liang,Zhilin Li,Shihao Zhang,Shucui Sun,Shuai Liu,Cheng Chen,Haifeng Yang,Shengtao Cui,Sung-Kwan Mo,Shuai Yang,Yongqing Li,Meixiao Wang,Lexian Yang,Jianpeng Liu,Zhongkai Liu,Yulin Chen###
(1274556, 1274560)
 The chromium spinel HgCr2Se4 represents aunique type of half-metal, which features a half-metal to semiconductortransition (HMST) and exhibits colossal magnetoresistance (CMR) across theferromagnetic-paramagnetic (FM<missing VAR>-PM) transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Electronic Origin of Half-metal to Semiconductor Transition and Colossal Magnetoresistance in Spinel HgCr2Se4|Aiji Liang,Zhilin Li,Shihao Zhang,Shucui Sun,Shuai Liu,Cheng Chen,Haifeng Yang,Shengtao Cui,Sung-Kwan Mo,Shuai Yang,Yongqing Li,Meixiao Wang,Lexian Yang,Jianpeng Liu,Zhongkai Liu,Yulin Chen###
(1274596, 1274596)
 The chromium spinel HgCr2Se4 represents aunique type of half-metal, which features a half-metal to semiconductortransition (HMST) and exhibits colossal magnetoresistance (CMR) across theferromagnetic-paramagnetic (FM<missing VAR>-PM) transition.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Electronic Origin of Half-metal to Semiconductor Transition and Colossal Magnetoresistance in Spinel HgCr2Se4|Aiji Liang,Zhilin Li,Shihao Zhang,Shucui Sun,Shuai Liu,Cheng Chen,Haifeng Yang,Shengtao Cui,Sung-Kwan Mo,Shuai Yang,Yongqing Li,Meixiao Wang,Lexian Yang,Jianpeng Liu,Zhongkai Liu,Yulin Chen###
(1274611, 1274611)
 The chromium spinel HgCr2Se4 represents aunique type of half-metal, which features a half-metal to semiconductortransition (HMST) and exhibits colossal magnetoresistance (CMR) across theferromagnetic-paramagnetic (FM<missing VAR>-PM) transition.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Electronic Origin of Half-metal to Semiconductor Transition and Colossal Magnetoresistance in Spinel HgCr2Se4|Aiji Liang,Zhilin Li,Shihao Zhang,Shucui Sun,Shuai Liu,Cheng Chen,Haifeng Yang,Shengtao Cui,Sung-Kwan Mo,Shuai Yang,Yongqing Li,Meixiao Wang,Lexian Yang,Jianpeng Liu,Zhongkai Liu,Yulin Chen###
(1274626, 1274626)
 The chromium spinel HgCr2Se4 represents aunique type of half-metal, which features a half-metal to semiconductortransition (HMST) and exhibits colossal magnetoresistance (CMR) across theferromagnetic-paramagnetic (FM<missing VAR>-PM) transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Electronic Origin of Half-metal to Semiconductor Transition and Colossal Magnetoresistance in Spinel HgCr2Se4|Aiji Liang,Zhilin Li,Shihao Zhang,Shucui Sun,Shuai Liu,Cheng Chen,Haifeng Yang,Shengtao Cui,Sung-Kwan Mo,Shuai Yang,Yongqing Li,Meixiao Wang,Lexian Yang,Jianpeng Liu,Zhongkai Liu,Yulin Chen###
(1274629, 1274629)
 The chromium spinel HgCr2Se4 represents aunique type of half-metal, which features a half-metal to semiconductortransition (HMST) and exhibits colossal magnetoresistance (CMR) across theferromagnetic-paramagnetic (FM<missing VAR>-PM) transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Electronic Origin of Half-metal to Semiconductor Transition and Colossal Magnetoresistance in Spinel HgCr2Se4|Aiji Liang,Zhilin Li,Shihao Zhang,Shucui Sun,Shuai Liu,Cheng Chen,Haifeng Yang,Shengtao Cui,Sung-Kwan Mo,Shuai Yang,Yongqing Li,Meixiao Wang,Lexian Yang,Jianpeng Liu,Zhongkai Liu,Yulin Chen###
(1274652, 1274652)
 Using angle-resolvedphotoemission spectroscopy (ARPES), we find that the Fermi surface of n<missing VAR>-typeHgCr2Se4 (n<missing VAR>-HgCr2Se4) consists of a single electron pocket which moves abovethe Fermi level (E<missing VAR>F) upon the FM<missing VAR>-PM<missing VAR> transition, leading to the HMST.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HgCr2Se4
###Electronic Origin of Half-metal to Semiconductor Transition and Colossal Magnetoresistance in Spinel HgCr2Se4|Aiji Liang,Zhilin Li,Shihao Zhang,Shucui Sun,Shuai Liu,Cheng Chen,Haifeng Yang,Shengtao Cui,Sung-Kwan Mo,Shuai Yang,Yongqing Li,Meixiao Wang,Lexian Yang,Jianpeng Liu,Zhongkai Liu,Yulin Chen###
(1274675, 1274679)
 Using angle-resolvedphotoemission spectroscopy (ARPES), we find that the Fermi surface of n<missing VAR>-typeHgCr2Se4 (n<missing VAR>-HgCr2Se4) consists of a single electron pocket which moves abovethe Fermi level (E<missing VAR>F) upon the FM<missing VAR>-PM<missing VAR> transition, leading to the HMST.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Se4
###Electronic Origin of Half-metal to Semiconductor Transition and Colossal Magnetoresistance in Spinel HgCr2Se4|Aiji Liang,Zhilin Li,Shihao Zhang,Shucui Sun,Shuai Liu,Cheng Chen,Haifeng Yang,Shengtao Cui,Sung-Kwan Mo,Shuai Yang,Yongqing Li,Meixiao Wang,Lexian Yang,Jianpeng Liu,Zhongkai Liu,Yulin Chen###
(1274687, 1274688)
 Using angle-resolvedphotoemission spectroscopy (ARPES), we find that the Fermi surface of n<missing VAR>-typeHgCr2Se4 (n<missing VAR>-HgCr2Se4) consists of a single electron pocket which moves abovethe Fermi level (E<missing VAR>F) upon the FM<missing VAR>-PM<missing VAR> transition, leading to the HMST.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Electronic Origin of Half-metal to Semiconductor Transition and Colossal Magnetoresistance in Spinel HgCr2Se4|Aiji Liang,Zhilin Li,Shihao Zhang,Shucui Sun,Shuai Liu,Cheng Chen,Haifeng Yang,Shengtao Cui,Sung-Kwan Mo,Shuai Yang,Yongqing Li,Meixiao Wang,Lexian Yang,Jianpeng Liu,Zhongkai Liu,Yulin Chen###
(1274718, 1274718)
 Using angle-resolvedphotoemission spectroscopy (ARPES), we find that the Fermi surface of n<missing VAR>-typeHgCr2Se4 (n<missing VAR>-HgCr2Se4) consists of a single electron pocket which moves abovethe Fermi level (E<missing VAR>F) upon the FM<missing VAR>-PM<missing VAR> transition, leading to the HMST.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Electronic Origin of Half-metal to Semiconductor Transition and Colossal Magnetoresistance in Spinel HgCr2Se4|Aiji Liang,Zhilin Li,Shihao Zhang,Shucui Sun,Shuai Liu,Cheng Chen,Haifeng Yang,Shengtao Cui,Sung-Kwan Mo,Shuai Yang,Yongqing Li,Meixiao Wang,Lexian Yang,Jianpeng Liu,Zhongkai Liu,Yulin Chen###
(1274725, 1274725)
 Using angle-resolvedphotoemission spectroscopy (ARPES), we find that the Fermi surface of n<missing VAR>-typeHgCr2Se4 (n<missing VAR>-HgCr2Se4) consists of a single electron pocket which moves abovethe Fermi level (E<missing VAR>F) upon the FM<missing VAR>-PM<missing VAR> transition, leading to the HMST.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Electronic Origin of Half-metal to Semiconductor Transition and Colossal Magnetoresistance in Spinel HgCr2Se4|Aiji Liang,Zhilin Li,Shihao Zhang,Shucui Sun,Shuai Liu,Cheng Chen,Haifeng Yang,Shengtao Cui,Sung-Kwan Mo,Shuai Yang,Yongqing Li,Meixiao Wang,Lexian Yang,Jianpeng Liu,Zhongkai Liu,Yulin Chen###
(1274728, 1274728)
 Using angle-resolvedphotoemission spectroscopy (ARPES), we find that the Fermi surface of n<missing VAR>-typeHgCr2Se4 (n<missing VAR>-HgCr2Se4) consists of a single electron pocket which moves abovethe Fermi level (E<missing VAR>F) upon the FM<missing VAR>-PM<missing VAR> transition, leading to the HMST.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Electronic Origin of Half-metal to Semiconductor Transition and Colossal Magnetoresistance in Spinel HgCr2Se4|Aiji Liang,Zhilin Li,Shihao Zhang,Shucui Sun,Shuai Liu,Cheng Chen,Haifeng Yang,Shengtao Cui,Sung-Kwan Mo,Shuai Yang,Yongqing Li,Meixiao Wang,Lexian Yang,Jianpeng Liu,Zhongkai Liu,Yulin Chen###
(1274740, 1274740)
 Using angle-resolvedphotoemission spectroscopy (ARPES), we find that the Fermi surface of n<missing VAR>-typeHgCr2Se4 (n<missing VAR>-HgCr2Se4) consists of a single electron pocket which moves abovethe Fermi level (E<missing VAR>F) upon the FM<missing VAR>-PM<missing VAR> transition, leading to the HMST.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Electronic Origin of Half-metal to Semiconductor Transition and Colossal Magnetoresistance in Spinel HgCr2Se4|Aiji Liang,Zhilin Li,Shihao Zhang,Shucui Sun,Shuai Liu,Cheng Chen,Haifeng Yang,Shengtao Cui,Sung-Kwan Mo,Shuai Yang,Yongqing Li,Meixiao Wang,Lexian Yang,Jianpeng Liu,Zhongkai Liu,Yulin Chen###
(1274821, 1274821)
 Theexchange band splitting and the chemical nonstoichiometry are two keyingredients to the HMST and CMR, consistent with our ab-initio calculation.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Electronic Origin of Half-metal to Semiconductor Transition and Colossal Magnetoresistance in Spinel HgCr2Se4|Aiji Liang,Zhilin Li,Shihao Zhang,Shucui Sun,Shuai Liu,Cheng Chen,Haifeng Yang,Shengtao Cui,Sung-Kwan Mo,Shuai Yang,Yongqing Li,Meixiao Wang,Lexian Yang,Jianpeng Liu,Zhongkai Liu,Yulin Chen###
(1274828, 1274828)
 Theexchange band splitting and the chemical nonstoichiometry are two keyingredients to the HMST and CMR, consistent with our ab-initio calculation.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HgCr2Se4
###Electronic Origin of Half-metal to Semiconductor Transition and Colossal Magnetoresistance in Spinel HgCr2Se4|Aiji Liang,Zhilin Li,Shihao Zhang,Shucui Sun,Shuai Liu,Cheng Chen,Haifeng Yang,Shengtao Cui,Sung-Kwan Mo,Shuai Yang,Yongqing Li,Meixiao Wang,Lexian Yang,Jianpeng Liu,Zhongkai Liu,Yulin Chen###
(1274876, 1274880)
 Ourfindings provide spectroscopic evidences of the electronic origin of theanomalous properties of HgCr2Se4, which address the unique phase transition inhalf-metals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrMnO3
###Strain driven antiferromagnetic exchange interaction in SrMnO$_3$ probed by phase shifted Spin Hall magnetoresistance|J. J. L. van Rijn,D. Wang,B. Sanyal,T. Banerjee###
(1274923, 1274926)
Strain driven antiferromagnetic exchange interaction in SrMnO3 probed by phase shifted Spin Hall magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrMnO3
###Strain driven antiferromagnetic exchange interaction in SrMnO$_3$ probed by phase shifted Spin Hall magnetoresistance|J. J. L. van Rijn,D. Wang,B. Sanyal,T. Banerjee###
(1274978, 1274981)
 Among them, SrMnO3, possessing strongmagnetoelectric coupling is gaining attention for the design of coexistingmagnetic and polar orders upon straining.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Strain driven antiferromagnetic exchange interaction in SrMnO$_3$ probed by phase shifted Spin Hall magnetoresistance|J. J. L. van Rijn,D. Wang,B. Sanyal,T. Banerjee###
(1275040, 1275040)
 Here we demonstrate antiferromagneticexchange interactions in strained SM<missing VAR>O thin films extracted from a new featurein the phase response of Spin Hall magnetoresistance, which has not beenexplored in earlier works, such as in magnetic insulators.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Strain driven antiferromagnetic exchange interaction in SrMnO$_3$ probed by phase shifted Spin Hall magnetoresistance|J. J. L. van Rijn,D. Wang,B. Sanyal,T. Banerjee###
(1275042, 1275042)
 Here we demonstrate antiferromagneticexchange interactions in strained SM<missing VAR>O thin films extracted from a new featurein the phase response of Spin Hall magnetoresistance, which has not beenexplored in earlier works, such as in magnetic insulators.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrMnO3
###Strain driven antiferromagnetic exchange interaction in SrMnO$_3$ probed by phase shifted Spin Hall magnetoresistance|J. J. L. van Rijn,D. Wang,B. Sanyal,T. Banerjee###
(1275169, 1275172)
 We explain ourfindings with a model that incorporates magnetic anisotropy along [110]direction, corroborates with DFT studies and is consistent with the directionof ferroelectric polarization in SrMnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Unification of Nonlinear Anomalous Hall Effect and Nonreciprocal Magnetoresistance in Metals by the Quantum Geometry|Daniel Kaplan,Tobias Holder,Binghai Yan###
(1275661, 1275661)
 Here, we derive a quantum kineticequation unifying the nonlinear anomalous Hall effect (NL<missing VAR>AHE) and nonreciprocalmagnetoresistance (NMR) from the quantum geometry.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Unification of Nonlinear Anomalous Hall Effect and Nonreciprocal Magnetoresistance in Metals by the Quantum Geometry|Daniel Kaplan,Tobias Holder,Binghai Yan###
(1275664, 1275664)
 Here, we derive a quantum kineticequation unifying the nonlinear anomalous Hall effect (NL<missing VAR>AHE) and nonreciprocalmagnetoresistance (NMR) from the quantum geometry.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Unification of Nonlinear Anomalous Hall Effect and Nonreciprocal Magnetoresistance in Metals by the Quantum Geometry|Daniel Kaplan,Tobias Holder,Binghai Yan###
(1275676, 1275676)
 Here, we derive a quantum kineticequation unifying the nonlinear anomalous Hall effect (NL<missing VAR>AHE) and nonreciprocalmagnetoresistance (NMR) from the quantum geometry.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Unification of Nonlinear Anomalous Hall Effect and Nonreciprocal Magnetoresistance in Metals by the Quantum Geometry|Daniel Kaplan,Tobias Holder,Binghai Yan###
(1275690, 1275690)
 In the dc limit, bothtransverse and longitudinal nonlinear conductivities include a term due to thenormalized quantum metric dipole.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Unification of Nonlinear Anomalous Hall Effect and Nonreciprocal Magnetoresistance in Metals by the Quantum Geometry|Daniel Kaplan,Tobias Holder,Binghai Yan###
(1275779, 1275779)
 We demonstrate thecoexistence of large a NL<missing VAR>AHE<missing VAR> and NMR driven by the quantum metric dipole infilms of the doped antiferromagentic topological insulator MnBi2Te4.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Unification of Nonlinear Anomalous Hall Effect and Nonreciprocal Magnetoresistance in Metals by the Quantum Geometry|Daniel Kaplan,Tobias Holder,Binghai Yan###
(1275782, 1275782)
 We demonstrate thecoexistence of large a NL<missing VAR>AHE<missing VAR> and NMR driven by the quantum metric dipole infilms of the doped antiferromagentic topological insulator MnBi2Te4.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Unification of Nonlinear Anomalous Hall Effect and Nonreciprocal Magnetoresistance in Metals by the Quantum Geometry|Daniel Kaplan,Tobias Holder,Binghai Yan###
(1275787, 1275787)
 We demonstrate thecoexistence of large a NL<missing VAR>AHE<missing VAR> and NMR driven by the quantum metric dipole infilms of the doped antiferromagentic topological insulator MnBi2Te4.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnBi2Te4
###Unification of Nonlinear Anomalous Hall Effect and Nonreciprocal Magnetoresistance in Metals by the Quantum Geometry|Daniel Kaplan,Tobias Holder,Binghai Yan###
(1275820, 1275824)
 We demonstrate thecoexistence of large a NL<missing VAR>AHE<missing VAR> and NMR driven by the quantum metric dipole infilms of the doped antiferromagentic topological insulator MnBi2Te4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tb/Co
###Optical Switching in Tb/Co-Multilayer Based Nanoscale Magnetic Tunnel Junctions|Sucheta Mondal,Debanjan Polley,Akshay Pattabi,Jyotirmoy Chatterjee,David Salomoni,Luis Aviles-Felix,Aurélien Olivier,Miguel Rubio-Roy,Bernard Diény,Liliana Daniela Buda Prejbeanu,Ricardo Sousa,Ioan Lucian Prejbeanu,Jeffrey Bokor###
(1275884, 1275886)
Optical Switching in Tb/Co-Multilayer Based Nanoscale Magnetic Tunnel Junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[132.0, 90, 'fs', 4],[228.0, 300, 'nm', 6],[231.0, 20, 'nm', 6]

Tb
###Optical Switching in Tb/Co-Multilayer Based Nanoscale Magnetic Tunnel Junctions|Sucheta Mondal,Debanjan Polley,Akshay Pattabi,Jyotirmoy Chatterjee,David Salomoni,Luis Aviles-Felix,Aurélien Olivier,Miguel Rubio-Roy,Bernard Diény,Liliana Daniela Buda Prejbeanu,Ricardo Sousa,Ioan Lucian Prejbeanu,Jeffrey Bokor###
(1275985, 1275985)
 Wedemonstrate optical switching of Tb/Comultilayer-based nanoscale MTJs bycombining optical writing and electrical read-out methods.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 90, 'fs', 1],[129.0, 300, 'nm', 3],[132.0, 20, 'nm', 3]

S
###Optical Switching in Tb/Co-Multilayer Based Nanoscale Magnetic Tunnel Junctions|Sucheta Mondal,Debanjan Polley,Akshay Pattabi,Jyotirmoy Chatterjee,David Salomoni,Luis Aviles-Felix,Aurélien Olivier,Miguel Rubio-Roy,Bernard Diény,Liliana Daniela Buda Prejbeanu,Ricardo Sousa,Ioan Lucian Prejbeanu,Jeffrey Bokor###
(1276042, 1276042)
 A 90 fs-long laserpulse switches the magnetization of the storage layer (SL).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 90, 'fs', 0],[72.0, 300, 'nm', 2],[75.0, 20, 'nm', 2]

S
###Optical Switching in Tb/Co-Multilayer Based Nanoscale Magnetic Tunnel Junctions|Sucheta Mondal,Debanjan Polley,Akshay Pattabi,Jyotirmoy Chatterjee,David Salomoni,Luis Aviles-Felix,Aurélien Olivier,Miguel Rubio-Roy,Bernard Diény,Liliana Daniela Buda Prejbeanu,Ricardo Sousa,Ioan Lucian Prejbeanu,Jeffrey Bokor###
(1276060, 1276060)
 The change inmagnetoresistance between the SL<missing VAR> and a reference layer (RL) is probedelectrically across the tunnel barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 90, 'fs', 1],[54.0, 300, 'nm', 1],[57.0, 20, 'nm', 1]

Pt/Co/B
###Spin Hall Induced Magnetization Dynamics in Multiferroic Tunnel Junction|Jakub Pawlak,Witold Skowroński,Piotr Kuświk,Félix Casanova,Marek Przybylski###
(1276317, 1276321)
 The combination of spin-orbit coupling driven effects and multiferroictunneling properties was explored experimentally in thin Pt/Co/BT<missing VAR>O/LSMOmultilayers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

O
###Spin Hall Induced Magnetization Dynamics in Multiferroic Tunnel Junction|Jakub Pawlak,Witold Skowroński,Piotr Kuświk,Félix Casanova,Marek Przybylski###
(1276323, 1276323)
 The combination of spin-orbit coupling driven effects and multiferroictunneling properties was explored experimentally in thin Pt/Co/BT<missing VAR>O/LSMOmultilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Spin Hall Induced Magnetization Dynamics in Multiferroic Tunnel Junction|Jakub Pawlak,Witold Skowroński,Piotr Kuświk,Félix Casanova,Marek Przybylski###
(1276328, 1276328)
 The combination of spin-orbit coupling driven effects and multiferroictunneling properties was explored experimentally in thin Pt/Co/BT<missing VAR>O/LSMOmultilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Spin Hall Induced Magnetization Dynamics in Multiferroic Tunnel Junction|Jakub Pawlak,Witold Skowroński,Piotr Kuświk,Félix Casanova,Marek Przybylski###
(1276342, 1276342)
 The presence of a Pt heavy metal allows for the spincurrent-induced magnetization precession of Co upon radio-frequency chargecurrent injection.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Spin Hall Induced Magnetization Dynamics in Multiferroic Tunnel Junction|Jakub Pawlak,Witold Skowroński,Piotr Kuświk,Félix Casanova,Marek Przybylski###
(1276367, 1276367)
 The presence of a Pt heavy metal allows for the spincurrent-induced magnetization precession of Co upon radio-frequency chargecurrent injection.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Spin Hall Induced Magnetization Dynamics in Multiferroic Tunnel Junction|Jakub Pawlak,Witold Skowroński,Piotr Kuświk,Félix Casanova,Marek Przybylski###
(1276391, 1276391)
 The utilization of a BT<missing VAR>O ferroelectric tunnel barrierseparating the Co and LSMO ferromagnetic electrodes gives rise to bothtunneling-magnetoresistance and electroresistance.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Spin Hall Induced Magnetization Dynamics in Multiferroic Tunnel Junction|Jakub Pawlak,Witold Skowroński,Piotr Kuświk,Félix Casanova,Marek Przybylski###
(1276393, 1276393)
 The utilization of a BT<missing VAR>O ferroelectric tunnel barrierseparating the Co and LSMO ferromagnetic electrodes gives rise to bothtunneling-magnetoresistance and electroresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Spin Hall Induced Magnetization Dynamics in Multiferroic Tunnel Junction|Jakub Pawlak,Witold Skowroński,Piotr Kuświk,Félix Casanova,Marek Przybylski###
(1276406, 1276406)
 The utilization of a BT<missing VAR>O ferroelectric tunnel barrierseparating the Co and LSMO ferromagnetic electrodes gives rise to bothtunneling-magnetoresistance and electroresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Spin Hall Induced Magnetization Dynamics in Multiferroic Tunnel Junction|Jakub Pawlak,Witold Skowroński,Piotr Kuświk,Félix Casanova,Marek Przybylski###
(1276413, 1276413)
 The utilization of a BT<missing VAR>O ferroelectric tunnel barrierseparating the Co and LSMO ferromagnetic electrodes gives rise to bothtunneling-magnetoresistance and electroresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co/Pt
###Spin Hall Induced Magnetization Dynamics in Multiferroic Tunnel Junction|Jakub Pawlak,Witold Skowroński,Piotr Kuświk,Félix Casanova,Marek Przybylski###
(1276463, 1276465)
 Using the spin-orbit torqueferromagnetic resonance, the maganetization dynamics of the Co/Pt bilayers wasstudied at room temperature.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Co
###Spin Hall Induced Magnetization Dynamics in Multiferroic Tunnel Junction|Jakub Pawlak,Witold Skowroński,Piotr Kuświk,Félix Casanova,Marek Przybylski###
(1276518, 1276518)
 Unexpectedly the magnetization dynamics study inthe same geometry performed at low temperature reveals the existence of both Coand LSMO resonance peaks indicating efficient spin current generation bothusing the spin Hall effect in Pt and spin pumping in LSMO that tunnel via theBT<missing VAR>O barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Spin Hall Induced Magnetization Dynamics in Multiferroic Tunnel Junction|Jakub Pawlak,Witold Skowroński,Piotr Kuświk,Félix Casanova,Marek Przybylski###
(1276526, 1276526)
 Unexpectedly the magnetization dynamics study inthe same geometry performed at low temperature reveals the existence of both Coand LSMO resonance peaks indicating efficient spin current generation bothusing the spin Hall effect in Pt and spin pumping in LSMO that tunnel via theBT<missing VAR>O barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Spin Hall Induced Magnetization Dynamics in Multiferroic Tunnel Junction|Jakub Pawlak,Witold Skowroński,Piotr Kuświk,Félix Casanova,Marek Przybylski###
(1276557, 1276557)
 Unexpectedly the magnetization dynamics study inthe same geometry performed at low temperature reveals the existence of both Coand LSMO resonance peaks indicating efficient spin current generation bothusing the spin Hall effect in Pt and spin pumping in LSMO that tunnel via theBT<missing VAR>O barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Spin Hall Induced Magnetization Dynamics in Multiferroic Tunnel Junction|Jakub Pawlak,Witold Skowroński,Piotr Kuświk,Félix Casanova,Marek Przybylski###
(1276570, 1276570)
 Unexpectedly the magnetization dynamics study inthe same geometry performed at low temperature reveals the existence of both Coand LSMO resonance peaks indicating efficient spin current generation bothusing the spin Hall effect in Pt and spin pumping in LSMO that tunnel via theBT<missing VAR>O barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Spin Hall Induced Magnetization Dynamics in Multiferroic Tunnel Junction|Jakub Pawlak,Witold Skowroński,Piotr Kuświk,Félix Casanova,Marek Przybylski###
(1276581, 1276581)
 Unexpectedly the magnetization dynamics study inthe same geometry performed at low temperature reveals the existence of both Coand LSMO resonance peaks indicating efficient spin current generation bothusing the spin Hall effect in Pt and spin pumping in LSMO that tunnel via theBT<missing VAR>O barrier.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Spin Hall Induced Magnetization Dynamics in Multiferroic Tunnel Junction|Jakub Pawlak,Witold Skowroński,Piotr Kuświk,Félix Casanova,Marek Przybylski###
(1276583, 1276583)
 Unexpectedly the magnetization dynamics study inthe same geometry performed at low temperature reveals the existence of both Coand LSMO resonance peaks indicating efficient spin current generation bothusing the spin Hall effect in Pt and spin pumping in LSMO that tunnel via theBT<missing VAR>O barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nd0.6Sr0.4MnO3
###Anisotropic magnetic and magnetotransport properties in morphologically distinct Nd0.6Sr0.4MnO3 thin films|R S Mrinaleni,E P Amaladass,A. T. Sathyanarayana,S Amirthapandian,Jegadeesan P,Pooja Gupta,T Geetha Kumary,S. K. Rai,Awadhesh Mani###
(1276612, 1276618)
Anisotropic magnetic and magnetotransport properties in morphologically distinct Nd0.6Sr0.4MnO3 thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.08,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.12,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nd0.6Sr0.4MnO3
###Anisotropic magnetic and magnetotransport properties in morphologically distinct Nd0.6Sr0.4MnO3 thin films|R S Mrinaleni,E P Amaladass,A. T. Sathyanarayana,S Amirthapandian,Jegadeesan P,Pooja Gupta,T Geetha Kumary,S. K. Rai,Awadhesh Mani###
(1276644, 1276650)
 We investigate the magnetic and magnetotransport properties of nanostructuredNd0.6Sr0.4MnO3 (NSM<missing VAR>O) thin films grown on (100) oriented SrTiO3 (ST<missing VAR>O)substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.08,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.12,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NS
###Anisotropic magnetic and magnetotransport properties in morphologically distinct Nd0.6Sr0.4MnO3 thin films|R S Mrinaleni,E P Amaladass,A. T. Sathyanarayana,S Amirthapandian,Jegadeesan P,Pooja Gupta,T Geetha Kumary,S. K. Rai,Awadhesh Mani###
(1276653, 1276654)
 We investigate the magnetic and magnetotransport properties of nanostructuredNd0.6Sr0.4MnO3 (NSM<missing VAR>O) thin films grown on (100) oriented SrTiO3 (ST<missing VAR>O)substrates.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Anisotropic magnetic and magnetotransport properties in morphologically distinct Nd0.6Sr0.4MnO3 thin films|R S Mrinaleni,E P Amaladass,A. T. Sathyanarayana,S Amirthapandian,Jegadeesan P,Pooja Gupta,T Geetha Kumary,S. K. Rai,Awadhesh Mani###
(1276656, 1276656)
 We investigate the magnetic and magnetotransport properties of nanostructuredNd0.6Sr0.4MnO3 (NSM<missing VAR>O) thin films grown on (100) oriented SrTiO3 (ST<missing VAR>O)substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Anisotropic magnetic and magnetotransport properties in morphologically distinct Nd0.6Sr0.4MnO3 thin films|R S Mrinaleni,E P Amaladass,A. T. Sathyanarayana,S Amirthapandian,Jegadeesan P,Pooja Gupta,T Geetha Kumary,S. K. Rai,Awadhesh Mani###
(1276673, 1276676)
 We investigate the magnetic and magnetotransport properties of nanostructuredNd0.6Sr0.4MnO3 (NSM<missing VAR>O) thin films grown on (100) oriented SrTiO3 (ST<missing VAR>O)substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Anisotropic magnetic and magnetotransport properties in morphologically distinct Nd0.6Sr0.4MnO3 thin films|R S Mrinaleni,E P Amaladass,A. T. Sathyanarayana,S Amirthapandian,Jegadeesan P,Pooja Gupta,T Geetha Kumary,S. K. Rai,Awadhesh Mani###
(1276679, 1276679)
 We investigate the magnetic and magnetotransport properties of nanostructuredNd0.6Sr0.4MnO3 (NSM<missing VAR>O) thin films grown on (100) oriented SrTiO3 (ST<missing VAR>O)substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Anisotropic magnetic and magnetotransport properties in morphologically distinct Nd0.6Sr0.4MnO3 thin films|R S Mrinaleni,E P Amaladass,A. T. Sathyanarayana,S Amirthapandian,Jegadeesan P,Pooja Gupta,T Geetha Kumary,S. K. Rai,Awadhesh Mani###
(1276681, 1276681)
 We investigate the magnetic and magnetotransport properties of nanostructuredNd0.6Sr0.4MnO3 (NSM<missing VAR>O) thin films grown on (100) oriented SrTiO3 (ST<missing VAR>O)substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Magnetic properties of hematite revealed by an ab initio parameterized spin model|Tobias Dannegger,András Deák,Levente Rózsa,E. Galindez-Ruales,Shubhankar Das,Eunchong Baek,Mathias Kläui,László Szunyogh,Ulrich Nowak###
(1277131, 1277131)
 Thecomputed isotropic and Dzyaloshinskii--Moriya interactions result in a Neeltemperature and weak ferromagnetic canting angle that are in good agreementwith experimental measurements.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V5S8
###Observation of Weak Kondo Effect and Angle Dependent Magnetoresistance in Layered Antiferromagnetic V$_5$S$_8$ Single Crystal|Indrani Kar,Sayan Routh,Soumya Ghorai,Shubham Purwar,S. Thirupathaiah###
(1277348, 1277351)
Observation of Weak Kondo Effect and Angle Dependent Magnetoresistance in Layered Antiferromagnetic V5S8 Single Crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6153846153846154,0,0,0,0,0,0,0.38461538461538464,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[202.0, 27, 'K', 4],[290.0, 3.5, 'T', 6]

V5S8
###Observation of Weak Kondo Effect and Angle Dependent Magnetoresistance in Layered Antiferromagnetic V$_5$S$_8$ Single Crystal|Indrani Kar,Sayan Routh,Soumya Ghorai,Shubham Purwar,S. Thirupathaiah###
(1277362, 1277365)
 The compound V5S8 can also be represented by V1.25S2, atransition metal dichalcogenide (TMDC) with excess V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6153846153846154,0,0,0,0,0,0,0.38461538461538464,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 27, 'K', 3],[276.0, 3.5, 'T', 5]

V1.25S2
###Observation of Weak Kondo Effect and Angle Dependent Magnetoresistance in Layered Antiferromagnetic V$_5$S$_8$ Single Crystal|Indrani Kar,Sayan Routh,Soumya Ghorai,Shubham Purwar,S. Thirupathaiah###
(1277377, 1277380)
 The compound V5S8 can also be represented by V1.25S2, atransition metal dichalcogenide (TMDC) with excess V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6153846153846154,0,0,0,0,0,0,0.38461538461538464,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 27, 'K', 3],[261.0, 3.5, 'T', 5]

C
###Observation of Weak Kondo Effect and Angle Dependent Magnetoresistance in Layered Antiferromagnetic V$_5$S$_8$ Single Crystal|Indrani Kar,Sayan Routh,Soumya Ghorai,Shubham Purwar,S. Thirupathaiah###
(1277396, 1277396)
 The compound V5S8 can also be represented by V1.25S2, atransition metal dichalcogenide (TMDC) with excess V.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 27, 'K', 3],[245.0, 3.5, 'T', 5]

V
###Observation of Weak Kondo Effect and Angle Dependent Magnetoresistance in Layered Antiferromagnetic V$_5$S$_8$ Single Crystal|Indrani Kar,Sayan Routh,Soumya Ghorai,Shubham Purwar,S. Thirupathaiah###
(1277403, 1277403)
 The compound V5S8 can also be represented by V1.25S2, atransition metal dichalcogenide (TMDC) with excess V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 27, 'K', 3],[238.0, 3.5, 'T', 5]

Cs
###Observation of Weak Kondo Effect and Angle Dependent Magnetoresistance in Layered Antiferromagnetic V$_5$S$_8$ Single Crystal|Indrani Kar,Sayan Routh,Soumya Ghorai,Shubham Purwar,S. Thirupathaiah###
(1277413, 1277413)
 Very few TMDCs showmagnetism and/or Kondo effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 27, 'K', 2],[228.0, 3.5, 'T', 4]

VSe2
###Observation of Weak Kondo Effect and Angle Dependent Magnetoresistance in Layered Antiferromagnetic V$_5$S$_8$ Single Crystal|Indrani Kar,Sayan Routh,Soumya Ghorai,Shubham Purwar,S. Thirupathaiah###
(1277440, 1277442)
 Among them, the sister compounds VSe2 andVTe2 are recently proved to show ferromagnetism in addition to thelow-temperature resistivity upturn due to Kondo effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 27, 'K', 1],[199.0, 3.5, 'T', 3]

VTe2
###Observation of Weak Kondo Effect and Angle Dependent Magnetoresistance in Layered Antiferromagnetic V$_5$S$_8$ Single Crystal|Indrani Kar,Sayan Routh,Soumya Ghorai,Shubham Purwar,S. Thirupathaiah###
(1277447, 1277449)
 Among them, the sister compounds VSe2 andVTe2 are recently proved to show ferromagnetism in addition to thelow-temperature resistivity upturn due to Kondo effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 27, 'K', 1],[192.0, 3.5, 'T', 3]

In
###Observation of Weak Kondo Effect and Angle Dependent Magnetoresistance in Layered Antiferromagnetic V$_5$S$_8$ Single Crystal|Indrani Kar,Sayan Routh,Soumya Ghorai,Shubham Purwar,S. Thirupathaiah###
(1277489, 1277489)
 In this study, we showKondo effect in V5S8 originated from the antiferromagnetic exchangeinteractions among the intercalated V atoms below the Nacutee<missing VAR>el (T<missing VAR>N)temperature of 27 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 27, 'K', 0],[152.0, 3.5, 'T', 2]

V5S8
###Observation of Weak Kondo Effect and Angle Dependent Magnetoresistance in Layered Antiferromagnetic V$_5$S$_8$ Single Crystal|Indrani Kar,Sayan Routh,Soumya Ghorai,Shubham Purwar,S. Thirupathaiah###
(1277507, 1277510)
 In this study, we showKondo effect in V5S8 originated from the antiferromagnetic exchangeinteractions among the intercalated V atoms below the Nacutee<missing VAR>el (T<missing VAR>N)temperature of 27 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6153846153846154,0,0,0,0,0,0,0.38461538461538464,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 27, 'K', 0],[131.0, 3.5, 'T', 2]

V
###Observation of Weak Kondo Effect and Angle Dependent Magnetoresistance in Layered Antiferromagnetic V$_5$S$_8$ Single Crystal|Indrani Kar,Sayan Routh,Soumya Ghorai,Shubham Purwar,S. Thirupathaiah###
(1277531, 1277531)
 In this study, we showKondo effect in V5S8 originated from the antiferromagnetic exchangeinteractions among the intercalated V atoms below the Nacutee<missing VAR>el (T<missing VAR>N)temperature of 27 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 27, 'K', 0],[110.0, 3.5, 'T', 2]

N
###Observation of Weak Kondo Effect and Angle Dependent Magnetoresistance in Layered Antiferromagnetic V$_5$S$_8$ Single Crystal|Indrani Kar,Sayan Routh,Soumya Ghorai,Shubham Purwar,S. Thirupathaiah###
(1277539, 1277539)
 In this study, we showKondo effect in V5S8 originated from the antiferromagnetic exchangeinteractions among the intercalated V atoms below the Nacutee<missing VAR>el (T<missing VAR>N)temperature of 27 K.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 27, 'K', 0],[102.0, 3.5, 'T', 2]

N
###Observation of Weak Kondo Effect and Angle Dependent Magnetoresistance in Layered Antiferromagnetic V$_5$S$_8$ Single Crystal|Indrani Kar,Sayan Routh,Soumya Ghorai,Shubham Purwar,S. Thirupathaiah###
(1277546, 1277546)
 In this study, we showKondo effect in V5S8 originated from the antiferromagnetic exchangeinteractions among the intercalated V atoms below the Nacutee<missing VAR>el (T<missing VAR>N)temperature of 27 K.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 27, 'K', 0],[95.0, 3.5, 'T', 2]

N
###Observation of Weak Kondo Effect and Angle Dependent Magnetoresistance in Layered Antiferromagnetic V$_5$S$_8$ Single Crystal|Indrani Kar,Sayan Routh,Soumya Ghorai,Shubham Purwar,S. Thirupathaiah###
(1277569, 1277569)
 We find isotropic magnetic properties above T<missing VAR>N, while astrong magnetic anisotropy is noticed below T<missing VAR>N.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 27, 'K', 1],[72.0, 3.5, 'T', 1]

N
###Observation of Weak Kondo Effect and Angle Dependent Magnetoresistance in Layered Antiferromagnetic V$_5$S$_8$ Single Crystal|Indrani Kar,Sayan Routh,Soumya Ghorai,Shubham Purwar,S. Thirupathaiah###
(1277590, 1277590)
 We find isotropic magnetic properties above T<missing VAR>N, while astrong magnetic anisotropy is noticed below T<missing VAR>N.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 27, 'K', 1],[51.0, 3.5, 'T', 1]

In
###Observation of Weak Kondo Effect and Angle Dependent Magnetoresistance in Layered Antiferromagnetic V$_5$S$_8$ Single Crystal|Indrani Kar,Sayan Routh,Soumya Ghorai,Shubham Purwar,S. Thirupathaiah###
(1277593, 1277593)
 In addition, below T<missing VAR>N wefind an out-of-plane (Hparallel c) spin-flop transition triggered at acritical field of 3.5 T that is absent from the in-plane (Hperp c).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 27, 'K', 2],[48.0, 3.5, 'T', 0]

N
###Observation of Weak Kondo Effect and Angle Dependent Magnetoresistance in Layered Antiferromagnetic V$_5$S$_8$ Single Crystal|Indrani Kar,Sayan Routh,Soumya Ghorai,Shubham Purwar,S. Thirupathaiah###
(1277601, 1277601)
 In addition, below T<missing VAR>N wefind an out-of-plane (Hparallel c) spin-flop transition triggered at acritical field of 3.5 T that is absent from the in-plane (Hperp c).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 27, 'K', 2],[40.0, 3.5, 'T', 0]

H
###Observation of Weak Kondo Effect and Angle Dependent Magnetoresistance in Layered Antiferromagnetic V$_5$S$_8$ Single Crystal|Indrani Kar,Sayan Routh,Soumya Ghorai,Shubham Purwar,S. Thirupathaiah###
(1277617, 1277617)
 In addition, below T<missing VAR>N wefind an out-of-plane (Hparallel c) spin-flop transition triggered at acritical field of 3.5 T that is absent from the in-plane (Hperp c).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 27, 'K', 2],[24.0, 3.5, 'T', 0]

H
###Observation of Weak Kondo Effect and Angle Dependent Magnetoresistance in Layered Antiferromagnetic V$_5$S$_8$ Single Crystal|Indrani Kar,Sayan Routh,Soumya Ghorai,Shubham Purwar,S. Thirupathaiah###
(1277658, 1277658)
 In addition, below T<missing VAR>N wefind an out-of-plane (Hparallel c) spin-flop transition triggered at acritical field of 3.5 T that is absent from the in-plane (Hperp c).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 27, 'K', 2],[17.0, 3.5, 'T', 0]

Ni
###Electrical characterization of the azimuthal anisotropy of $(\mathrm{Ni}_x\mathrm{Co}_{1-x})\mathrm{B}$-based ferromagnetic nanotubes|Dhananjay Tiwari,Martin Christoph Scheuerlein,Mahdi Jaber,Eric Gautier,Laurent Vila,Jean-Philippe Attané,Michael Schöbitz,Aurélien Masseboeuf,Tim Hellmann,Jan P. Hofmann,Wolfgang Ensinger,Olivier Fruchart###
(1277718, 1277718)
Electrical characterization of the azimuthal anisotropy of (mathrmNix<missing VAR>mathrmCo1-x)mathrmB-based ferromagnetic nanotubes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 100, 'nm', 2],[110.0, 500, 'nm', 2],[119.0, 10, 'nm', 2],[164.0, -0.3, '%', 3],[262.0, 10, 'mT', 6]

B
###Electrical characterization of the azimuthal anisotropy of $(\mathrm{Ni}_x\mathrm{Co}_{1-x})\mathrm{B}$-based ferromagnetic nanotubes|Dhananjay Tiwari,Martin Christoph Scheuerlein,Mahdi Jaber,Eric Gautier,Laurent Vila,Jean-Philippe Attané,Michael Schöbitz,Aurélien Masseboeuf,Tim Hellmann,Jan P. Hofmann,Wolfgang Ensinger,Olivier Fruchart###
(1277727, 1277727)
Electrical characterization of the azimuthal anisotropy of (mathrmNix<missing VAR>mathrmCo1-x)mathrmB-based ferromagnetic nanotubes.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 100, 'nm', 2],[101.0, 500, 'nm', 2],[110.0, 10, 'nm', 2],[155.0, -0.3, '%', 3],[253.0, 10, 'mT', 6]

Ni
###Electrical characterization of the azimuthal anisotropy of $(\mathrm{Ni}_x\mathrm{Co}_{1-x})\mathrm{B}$-based ferromagnetic nanotubes|Dhananjay Tiwari,Martin Christoph Scheuerlein,Mahdi Jaber,Eric Gautier,Laurent Vila,Jean-Philippe Attané,Michael Schöbitz,Aurélien Masseboeuf,Tim Hellmann,Jan P. Hofmann,Wolfgang Ensinger,Olivier Fruchart###
(1277760, 1277760)
 We report on the structural, electric and magnetic properties of(mathrmNix<missing VAR>mathrmCo1-x)mathrmB ferromagnetic nanotubes,displaying azimuthal magnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 100, 'nm', 1],[68.0, 500, 'nm', 1],[77.0, 10, 'nm', 1],[122.0, -0.3, '%', 2],[220.0, 10, 'mT', 5]

B
###Electrical characterization of the azimuthal anisotropy of $(\mathrm{Ni}_x\mathrm{Co}_{1-x})\mathrm{B}$-based ferromagnetic nanotubes|Dhananjay Tiwari,Martin Christoph Scheuerlein,Mahdi Jaber,Eric Gautier,Laurent Vila,Jean-Philippe Attané,Michael Schöbitz,Aurélien Masseboeuf,Tim Hellmann,Jan P. Hofmann,Wolfgang Ensinger,Olivier Fruchart###
(1277769, 1277769)
 We report on the structural, electric and magnetic properties of(mathrmNix<missing VAR>mathrmCo1-x)mathrmB ferromagnetic nanotubes,displaying azimuthal magnetization.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 100, 'nm', 1],[59.0, 500, 'nm', 1],[68.0, 10, 'nm', 1],[113.0, -0.3, '%', 2],[211.0, 10, 'mT', 5]

(H)
###Electrical characterization of the azimuthal anisotropy of $(\mathrm{Ni}_x\mathrm{Co}_{1-x})\mathrm{B}$-based ferromagnetic nanotubes|Dhananjay Tiwari,Martin Christoph Scheuerlein,Mahdi Jaber,Eric Gautier,Laurent Vila,Jean-Philippe Attané,Michael Schöbitz,Aurélien Masseboeuf,Tim Hellmann,Jan P. Hofmann,Wolfgang Ensinger,Olivier Fruchart###
(1277951, 1277953)
 We determined the azimuthal anisotropy fieldfrom M<missing VAR>(H) AMR loops of single tubes contacted electrically.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 100, 'nm', 3],[123.0, 500, 'nm', 3],[114.0, 10, 'nm', 3],[69.0, -0.3, '%', 2],[27.0, 10, 'mT', 1]

Co
###Electrical characterization of the azimuthal anisotropy of $(\mathrm{Ni}_x\mathrm{Co}_{1-x})\mathrm{B}$-based ferromagnetic nanotubes|Dhananjay Tiwari,Martin Christoph Scheuerlein,Mahdi Jaber,Eric Gautier,Laurent Vila,Jean-Philippe Attané,Michael Schöbitz,Aurélien Masseboeuf,Tim Hellmann,Jan P. Hofmann,Wolfgang Ensinger,Olivier Fruchart###
(1278011, 1278011)
 Its magnitude isaround 10mT, and tends to increase with the tube wall thickness, as well as theCo content.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, 100, 'nm', 4],[183.0, 500, 'nm', 4],[174.0, 10, 'nm', 4],[129.0, -0.3, '%', 3],[31.0, 10, 'mT', 0]

Co3Sn2S2
###Magnetoresistance signature of two-dimensional electronic states in Co$_3$Sn$_2$S$_2$|Jiaji Zhao,Bingyan Jiang,Shen Zhang,Lujunyu Wang,Enke Liu,Zhilin Li,Xiaosong Wu###
(1278071, 1278076)
Magnetoresistance signature of two-dimensional electronic states in Co3Sn2S2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 2, 'D', 2],[263.0, 2, 'D', 5]

Co3Sn2S2
###Magnetoresistance signature of two-dimensional electronic states in Co$_3$Sn$_2$S$_2$|Jiaji Zhao,Bingyan Jiang,Shen Zhang,Lujunyu Wang,Enke Liu,Zhilin Li,Xiaosong Wu###
(1278200, 1278205)
 We report amagnetoresistance (MR) study of a kagome material, Co3Sn2S2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 2, 'D', 1],[134.0, 2, 'D', 2]

Mn3Si2Te6
###Anomalous Nernst effect in a ferrimagnetic nodal-line semiconductor Mn$_3$Si$_2$Te$_6$|Chen Ran,Xinrun Mi,Junying Shen,Honghui Wang,Kunya Yang,Yan Liu,Guiwen Wang,Guoyu Wang,Youguo Shi,Aifeng Wang,Yisheng Chai,Xiaolong Yang,Mingquan He,Xin Tong,Xiaoyuan Zhou###
(1278394, 1278399)
Anomalous Nernst effect in a ferrimagnetic nodal-line semiconductor Mn3Si2Te6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0.2727272727272727,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5454545454545454,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Anomalous Nernst effect in a ferrimagnetic nodal-line semiconductor Mn$_3$Si$_2$Te$_6$|Chen Ran,Xinrun Mi,Junying Shen,Honghui Wang,Kunya Yang,Yan Liu,Guiwen Wang,Guoyu Wang,Youguo Shi,Aifeng Wang,Yisheng Chai,Xiaolong Yang,Mingquan He,Xin Tong,Xiaoyuan Zhou###
(1278402, 1278402)
 In the ferrimagnetic nodal-line semiconductor Mn3Si2Te6, colossalmagnetoresistance (CMR) arises below Tmathrmc78 K due to the interplayof magnetism and topological nodal-line fermiology.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn3Si2Te6
###Anomalous Nernst effect in a ferrimagnetic nodal-line semiconductor Mn$_3$Si$_2$Te$_6$|Chen Ran,Xinrun Mi,Junying Shen,Honghui Wang,Kunya Yang,Yan Liu,Guiwen Wang,Guoyu Wang,Youguo Shi,Aifeng Wang,Yisheng Chai,Xiaolong Yang,Mingquan He,Xin Tong,Xiaoyuan Zhou###
(1278414, 1278419)
 In the ferrimagnetic nodal-line semiconductor Mn3Si2Te6, colossalmagnetoresistance (CMR) arises below Tmathrmc78 K due to the interplayof magnetism and topological nodal-line fermiology.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0.2727272727272727,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5454545454545454,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Anomalous Nernst effect in a ferrimagnetic nodal-line semiconductor Mn$_3$Si$_2$Te$_6$|Chen Ran,Xinrun Mi,Junying Shen,Honghui Wang,Kunya Yang,Yan Liu,Guiwen Wang,Guoyu Wang,Youguo Shi,Aifeng Wang,Yisheng Chai,Xiaolong Yang,Mingquan He,Xin Tong,Xiaoyuan Zhou###
(1278428, 1278428)
 In the ferrimagnetic nodal-line semiconductor Mn3Si2Te6, colossalmagnetoresistance (CMR) arises below Tmathrmc78 K due to the interplayof magnetism and topological nodal-line fermiology.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Anomalous Nernst effect in a ferrimagnetic nodal-line semiconductor Mn$_3$Si$_2$Te$_6$|Chen Ran,Xinrun Mi,Junying Shen,Honghui Wang,Kunya Yang,Yan Liu,Guiwen Wang,Guoyu Wang,Youguo Shi,Aifeng Wang,Yisheng Chai,Xiaolong Yang,Mingquan He,Xin Tong,Xiaoyuan Zhou###
(1278442, 1278442)
 In the ferrimagnetic nodal-line semiconductor Mn3Si2Te6, colossalmagnetoresistance (CMR) arises below Tmathrmc78 K due to the interplayof magnetism and topological nodal-line fermiology.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn3Si2Te6
###Anomalous Nernst effect in a ferrimagnetic nodal-line semiconductor Mn$_3$Si$_2$Te$_6$|Chen Ran,Xinrun Mi,Junying Shen,Honghui Wang,Kunya Yang,Yan Liu,Guiwen Wang,Guoyu Wang,Youguo Shi,Aifeng Wang,Yisheng Chai,Xiaolong Yang,Mingquan He,Xin Tong,Xiaoyuan Zhou###
(1278523, 1278528)
 Here, we present sizable anomalous Nernst signal inMn3Si2Te6 below Tmathrmc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0.2727272727272727,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5454545454545454,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Anomalous Nernst effect in a ferrimagnetic nodal-line semiconductor Mn$_3$Si$_2$Te$_6$|Chen Ran,Xinrun Mi,Junying Shen,Honghui Wang,Kunya Yang,Yan Liu,Guiwen Wang,Guoyu Wang,Youguo Shi,Aifeng Wang,Yisheng Chai,Xiaolong Yang,Mingquan He,Xin Tong,Xiaoyuan Zhou###
(1278537, 1278537)
 In the low-magnetic-field region whereCMR is most apparent, the scaling ratio between the Nernst signal andmagnetization is significantly enhanced compared to that in conventionalmagnetic materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Anomalous Nernst effect in a ferrimagnetic nodal-line semiconductor Mn$_3$Si$_2$Te$_6$|Chen Ran,Xinrun Mi,Junying Shen,Honghui Wang,Kunya Yang,Yan Liu,Guiwen Wang,Guoyu Wang,Youguo Shi,Aifeng Wang,Yisheng Chai,Xiaolong Yang,Mingquan He,Xin Tong,Xiaoyuan Zhou###
(1278552, 1278552)
 In the low-magnetic-field region whereCMR is most apparent, the scaling ratio between the Nernst signal andmagnetization is significantly enhanced compared to that in conventionalmagnetic materials.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Anomalous Nernst effect in a ferrimagnetic nodal-line semiconductor Mn$_3$Si$_2$Te$_6$|Chen Ran,Xinrun Mi,Junying Shen,Honghui Wang,Kunya Yang,Yan Liu,Guiwen Wang,Guoyu Wang,Youguo Shi,Aifeng Wang,Yisheng Chai,Xiaolong Yang,Mingquan He,Xin Tong,Xiaoyuan Zhou###
(1278614, 1278614)
 The enhanced Nernst effect and CMR likely share the samemechanisms, which are closely linked to the nodal-line topology.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Ferromagnetism and Metal-Insulator transition in F-doped LaMnO3|Ekta Yadav,Pramod Ghising,K. P. Rajeev,Z. Hossain###
(1278669, 1278669)
Ferromagnetism and Metal-Insulator transition in F-doped LaMnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 239, 'K', 3],[104.0, -64.0, 'This', 3],[211.0, 239, 'K', 4],[214.0, 213, 'K', 4],[265.0, 213, 'K', 5]

LaMnO3
###Ferromagnetism and Metal-Insulator transition in F-doped LaMnO3|Ekta Yadav,Pramod Ghising,K. P. Rajeev,Z. Hossain###
(1278673, 1278676)
Ferromagnetism and Metal-Insulator transition in F-doped LaMnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 239, 'K', 3],[97.0, -64.0, 'This', 3],[204.0, 239, 'K', 4],[207.0, 213, 'K', 4],[258.0, 213, 'K', 5]

LaMnO3
###Ferromagnetism and Metal-Insulator transition in F-doped LaMnO3|Ekta Yadav,Pramod Ghising,K. P. Rajeev,Z. Hossain###
(1278699, 1278702)
 We present our studies on polycrystalline samples of fluorine doped LaMnO3(LaMnO3-yFy).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 239, 'K', 2],[71.0, -64.0, 'This', 2],[178.0, 239, 'K', 3],[181.0, 213, 'K', 3],[232.0, 213, 'K', 4]

LaMnO3-y
###Ferromagnetism and Metal-Insulator transition in F-doped LaMnO3|Ekta Yadav,Pramod Ghising,K. P. Rajeev,Z. Hossain###
(1278706, 1278711)
 We present our studies on polycrystalline samples of fluorine doped LaMnO3(LaMnO3-yFy).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[51.0, 239, 'K', 2],[62.0, -64.0, 'This', 2],[169.0, 239, 'K', 3],[172.0, 213, 'K', 3],[223.0, 213, 'K', 4]

LaMnO2.5F0.5
###Ferromagnetism and Metal-Insulator transition in F-doped LaMnO3|Ekta Yadav,Pramod Ghising,K. P. Rajeev,Z. Hossain###
(1278716, 1278721)
 LaMnO2.5F0.5 exhibits remarkable magnetic and electricalproperties.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 239, 'K', 1],[52.0, -64.0, 'This', 1],[159.0, 239, 'K', 2],[162.0, 213, 'K', 2],[213.0, 213, 'K', 3]

LaMnO3
###Ferromagnetism and Metal-Insulator transition in F-doped LaMnO3|Ekta Yadav,Pramod Ghising,K. P. Rajeev,Z. Hossain###
(1278794, 1278797)
 It shows ferromagnetic and metallic behavior with a high Curietemperature of  239 K and a high magnetoresistance of -64. This drastic changein magnetic properties in comparison to pure LaMnO3 is ascribed to the presenceof mixed-valence Mn ions driven by the F-doping at the O-sites, which enablesdouble exchange (DE) in LMOF.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 239, 'K', 0],[21.0, -64.0, 'This', 0],[83.0, 239, 'K', 1],[86.0, 213, 'K', 1],[137.0, 213, 'K', 2]

Mn
###Ferromagnetism and Metal-Insulator transition in F-doped LaMnO3|Ekta Yadav,Pramod Ghising,K. P. Rajeev,Z. Hossain###
(1278816, 1278816)
 It shows ferromagnetic and metallic behavior with a high Curietemperature of  239 K and a high magnetoresistance of -64. This drastic changein magnetic properties in comparison to pure LaMnO3 is ascribed to the presenceof mixed-valence Mn ions driven by the F-doping at the O-sites, which enablesdouble exchange (DE) in LMOF.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 239, 'K', 0],[43.0, -64.0, 'This', 0],[64.0, 239, 'K', 1],[67.0, 213, 'K', 1],[118.0, 213, 'K', 2]

F
###Ferromagnetism and Metal-Insulator transition in F-doped LaMnO3|Ekta Yadav,Pramod Ghising,K. P. Rajeev,Z. Hossain###
(1278826, 1278826)
 It shows ferromagnetic and metallic behavior with a high Curietemperature of  239 K and a high magnetoresistance of -64. This drastic changein magnetic properties in comparison to pure LaMnO3 is ascribed to the presenceof mixed-valence Mn ions driven by the F-doping at the O-sites, which enablesdouble exchange (DE) in LMOF.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 239, 'K', 0],[53.0, -64.0, 'This', 0],[54.0, 239, 'K', 1],[57.0, 213, 'K', 1],[108.0, 213, 'K', 2]

O
###Ferromagnetism and Metal-Insulator transition in F-doped LaMnO3|Ekta Yadav,Pramod Ghising,K. P. Rajeev,Z. Hossain###
(1278834, 1278834)
 It shows ferromagnetic and metallic behavior with a high Curietemperature of  239 K and a high magnetoresistance of -64. This drastic changein magnetic properties in comparison to pure LaMnO3 is ascribed to the presenceof mixed-valence Mn ions driven by the F-doping at the O-sites, which enablesdouble exchange (DE) in LMOF.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 239, 'K', 0],[61.0, -64.0, 'This', 0],[46.0, 239, 'K', 1],[49.0, 213, 'K', 1],[100.0, 213, 'K', 2]

OF
###Ferromagnetism and Metal-Insulator transition in F-doped LaMnO3|Ekta Yadav,Pramod Ghising,K. P. Rajeev,Z. Hossain###
(1278857, 1278858)
 It shows ferromagnetic and metallic behavior with a high Curietemperature of  239 K and a high magnetoresistance of -64. This drastic changein magnetic properties in comparison to pure LaMnO3 is ascribed to the presenceof mixed-valence Mn ions driven by the F-doping at the O-sites, which enablesdouble exchange (DE) in LMOF.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 239, 'K', 0],[84.0, -64.0, 'This', 0],[22.0, 239, 'K', 1],[25.0, 213, 'K', 1],[76.0, 213, 'K', 2]

W
###Large and tunable magnetoresistance in van der Waals Ferromagnet/Semiconductor junctions|Wenkai Zhu,Yingmei Zhu,Tong Zhou,Xianpeng Zhang,Hailong Lin,Qirui Cui,Faguang Yan,Ziao Wang,Yongcheng Deng,Hongxin Yang,Lixia Zhao,Igor Žutić,Kirill D. Belashchenko,Kaiyou Wang###
(1279385, 1279385)
 A radically different approach ofusing atomically-thin van der Waals (vdW) materials in MTJs is expected toboost their figure of merit, the tunneling magnetoresistance (TMR), whilerelaxing the lattice-matching requirements from the epitaxial growth andsupporting high-quality integration of dissimilar materials withatomically-sharp interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 192, '%', 1],[106.0, 10, 'K', 1]

W
###Large and tunable magnetoresistance in van der Waals Ferromagnet/Semiconductor junctions|Wenkai Zhu,Yingmei Zhu,Tong Zhou,Xianpeng Zhang,Hailong Lin,Qirui Cui,Faguang Yan,Ziao Wang,Yongcheng Deng,Hongxin Yang,Lixia Zhao,Igor Žutić,Kirill D. Belashchenko,Kaiyou Wang###
(1279498, 1279498)
 We report TMR up to 192% at 10 K in all-vdWFe3GeTe2/GaSe/Fe3GeTe2 MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 192, '%', 0],[7.0, 10, 'K', 0]

Fe3GeTe2/GaSe/Fe3GeTe2
###Large and tunable magnetoresistance in van der Waals Ferromagnet/Semiconductor junctions|Wenkai Zhu,Yingmei Zhu,Tong Zhou,Xianpeng Zhang,Hailong Lin,Qirui Cui,Faguang Yan,Ziao Wang,Yongcheng Deng,Hongxin Yang,Lixia Zhao,Igor Žutić,Kirill D. Belashchenko,Kaiyou Wang###
(1279501, 1279514)
 We report TMR up to 192% at 10 K in all-vdWFe3GeTe2/GaSe/Fe3GeTe2 MTJs.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[14.0, 192, '%', 0],[10.0, 10, 'K', 0]

W
###Large and tunable magnetoresistance in van der Waals Ferromagnet/Semiconductor junctions|Wenkai Zhu,Yingmei Zhu,Tong Zhou,Xianpeng Zhang,Hailong Lin,Qirui Cui,Faguang Yan,Ziao Wang,Yongcheng Deng,Hongxin Yang,Lixia Zhao,Igor Žutić,Kirill D. Belashchenko,Kaiyou Wang###
(1279555, 1279555)
 Remarkably, instead of the usual insulatingspacer, this large TMR is realized with a vdW semiconductor GaSe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 192, '%', 1],[64.0, 10, 'K', 1]

GaSe
###Large and tunable magnetoresistance in van der Waals Ferromagnet/Semiconductor junctions|Wenkai Zhu,Yingmei Zhu,Tong Zhou,Xianpeng Zhang,Hailong Lin,Qirui Cui,Faguang Yan,Ziao Wang,Yongcheng Deng,Hongxin Yang,Lixia Zhao,Igor Žutić,Kirill D. Belashchenko,Kaiyou Wang###
(1279559, 1279560)
 Remarkably, instead of the usual insulatingspacer, this large TMR is realized with a vdW semiconductor GaSe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 192, '%', 1],[68.0, 10, 'K', 1]

W
###Large and tunable magnetoresistance in van der Waals Ferromagnet/Semiconductor junctions|Wenkai Zhu,Yingmei Zhu,Tong Zhou,Xianpeng Zhang,Hailong Lin,Qirui Cui,Faguang Yan,Ziao Wang,Yongcheng Deng,Hongxin Yang,Lixia Zhao,Igor Žutić,Kirill D. Belashchenko,Kaiyou Wang###
(1279581, 1279581)
 Integrationof two-dimensional ferromagnets in semiconductor-based vdW junctions offersgate-tunability, bias dependence, magnetic proximity effects, andspin-dependent optical-selection rules.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 192, '%', 2],[90.0, 10, 'K', 2]

W
###Large and tunable magnetoresistance in van der Waals Ferromagnet/Semiconductor junctions|Wenkai Zhu,Yingmei Zhu,Tong Zhou,Xianpeng Zhang,Hailong Lin,Qirui Cui,Faguang Yan,Ziao Wang,Yongcheng Deng,Hongxin Yang,Lixia Zhao,Igor Žutić,Kirill D. Belashchenko,Kaiyou Wang###
(1279687, 1279687)
 We demonstrate that not just themagnitude, but also the TMR sign is tuned by the applied bias or thesemiconductor thickness, enabling modulation of highly spin-polarized carriersin vdW semiconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[200.0, 192, '%', 3],[196.0, 10, 'K', 3]

CoO/Pt
###Mechanism of electrical switching of ultra-thin CoO/Pt bilayers|Christin Schmitt,Adithya Rajan,Grischa Beneke,Aditya Kumar,Tobias Sparmann,Hendrik Meer,Beatrice Bednarz,Rafael Ramos,Miguel Angel Nino,Michael Foerster,Eiji Saitoh,Mathias Kläui###
(1279714, 1279717)
Mechanism of electrical switching of ultra-thin CoO/Pt bilayers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

N
###Mechanism of electrical switching of ultra-thin CoO/Pt bilayers|Christin Schmitt,Adithya Rajan,Grischa Beneke,Aditya Kumar,Tobias Sparmann,Hendrik Meer,Beatrice Bednarz,Rafael Ramos,Miguel Angel Nino,Michael Foerster,Eiji Saitoh,Mathias Kläui###
(1279736, 1279736)
 We study current-induced switching of the Neel vector in CoO/Pt bilayers tounderstand the underlaying antiferromagnetic switching mechanism.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoO/Pt
###Mechanism of electrical switching of ultra-thin CoO/Pt bilayers|Christin Schmitt,Adithya Rajan,Grischa Beneke,Aditya Kumar,Tobias Sparmann,Hendrik Meer,Beatrice Bednarz,Rafael Ramos,Miguel Angel Nino,Michael Foerster,Eiji Saitoh,Mathias Kläui###
(1279743, 1279746)
 We study current-induced switching of the Neel vector in CoO/Pt bilayers tounderstand the underlaying antiferromagnetic switching mechanism.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

CoO/Pt
###Mechanism of electrical switching of ultra-thin CoO/Pt bilayers|Christin Schmitt,Adithya Rajan,Grischa Beneke,Aditya Kumar,Tobias Sparmann,Hendrik Meer,Beatrice Bednarz,Rafael Ramos,Miguel Angel Nino,Michael Foerster,Eiji Saitoh,Mathias Kläui###
(1279782, 1279785)
 Surprisingly,we find that for ultra-thin CoO/Pt bilayers electrical pulses along the samepath can lead to an increase or decrease of the spin Hall magnetoresistancesignal, depending on the current density of the pulse.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

P
###Mechanism of electrical switching of ultra-thin CoO/Pt bilayers|Christin Schmitt,Adithya Rajan,Grischa Beneke,Aditya Kumar,Tobias Sparmann,Hendrik Meer,Beatrice Bednarz,Rafael Ramos,Miguel Angel Nino,Michael Foerster,Eiji Saitoh,Mathias Kläui###
(1279871, 1279871)
 By comparing the resultsof these electrical measurements to XMLD-PEEM imaging of the antiferromagneticdomain structure before and after the application of current pulses, we revealthe reorientation of the Neel vector in ultra-thin CoO(4 nm).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Mechanism of electrical switching of ultra-thin CoO/Pt bilayers|Christin Schmitt,Adithya Rajan,Grischa Beneke,Aditya Kumar,Tobias Sparmann,Hendrik Meer,Beatrice Bednarz,Rafael Ramos,Miguel Angel Nino,Michael Foerster,Eiji Saitoh,Mathias Kläui###
(1279919, 1279919)
 By comparing the resultsof these electrical measurements to XMLD-PEEM imaging of the antiferromagneticdomain structure before and after the application of current pulses, we revealthe reorientation of the Neel vector in ultra-thin CoO(4 nm).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

RbV3Sb5
###Two-fold symmetric superconductivity in the kagome superconductor RbV3Sb5|Shuo Wang,Ze-Nan Wu,Jing-Zhi Fang,Zhongming Wei,Zhiwei Wang,Wen Huang,Yugui Yao,Jia-Jie Yang,Ben-Chuan Lin,Dapeng Yu###
(1280091, 1280095)
Two-fold symmetric superconductivity in the kagome superconductor RbV3Sb5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5555555555555556,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

RbV3Sb5
###Two-fold symmetric superconductivity in the kagome superconductor RbV3Sb5|Shuo Wang,Ze-Nan Wu,Jing-Zhi Fang,Zhongming Wei,Zhiwei Wang,Wen Huang,Yugui Yao,Jia-Jie Yang,Ben-Chuan Lin,Dapeng Yu###
(1280228, 1280232)
 Here we report a two-fold rotational symmetricsuperconductivity of thin-film RbV3Sb5 in response to a direction-dependentin-plane magnetic fields, in contrast to the six-fold structural symmetry ofthe crystal lattice.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5555555555555556,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.875Sr0.125MnO3
###Observation of Colossal Terahertz Magnetoresistance and Magnetocapacitance in a Perovskite Manganite|Fuyang Tay,Swati Chaudhary,Jiaming He,Nicolas Marquez Peraca,Andrey Baydin,Gregory A. Fiete,Jianshi Zhou,Junichiro Kono###
(1280494, 1280500)
 We have studied the terahertz response of a bulk single crystal ofLa0.875Sr0.125MnO3 at around its Curie temperature, observinglarge changes in the real and imaginary parts of the optical conductivity as afunction of magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.025,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.175,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 6, 'T', 1],[112.0, 60, '%', 1],[117.0, 15, '%', 1],[126.0, 180, 'K', 1]

FeCo
###Effect of atomic anti-site disorder on the AMR in FeCo alloys|Mingsong Zhang,Bin Peng,Wanli Zhang,Wenxu Zhang###
(1280776, 1280777)
Effect of atomic anti-site disorder on the AMR in FeCo alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Effect of atomic anti-site disorder on the AMR in FeCo alloys|Mingsong Zhang,Bin Peng,Wanli Zhang,Wenxu Zhang###
(1280782, 1280782)
 In order to understand the anti-site disorder effect on the anisotropicmagnetoresistance (AMR) effect in alloys, rmFe50Co50 alloys werestudied in this work using the fully relativistic spin-polarized screened (KKR)method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe50Co50
###Effect of atomic anti-site disorder on the AMR in FeCo alloys|Mingsong Zhang,Bin Peng,Wanli Zhang,Wenxu Zhang###
(1280823, 1280826)
 In order to understand the anti-site disorder effect on the anisotropicmagnetoresistance (AMR) effect in alloys, rmFe50Co50 alloys werestudied in this work using the fully relativistic spin-polarized screened (KKR)method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

KK
###Effect of atomic anti-site disorder on the AMR in FeCo alloys|Mingsong Zhang,Bin Peng,Wanli Zhang,Wenxu Zhang###
(1280856, 1280857)
 In order to understand the anti-site disorder effect on the anisotropicmagnetoresistance (AMR) effect in alloys, rmFe50Co50 alloys werestudied in this work using the fully relativistic spin-polarized screened (KKR)method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Effect of atomic anti-site disorder on the AMR in FeCo alloys|Mingsong Zhang,Bin Peng,Wanli Zhang,Wenxu Zhang###
(1280881, 1280881)
 The anti-site effect was modeled by interchanging Fe and Co atoms andtreated by the coherent potential approximation (CPA).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Effect of atomic anti-site disorder on the AMR in FeCo alloys|Mingsong Zhang,Bin Peng,Wanli Zhang,Wenxu Zhang###
(1280885, 1280885)
 The anti-site effect was modeled by interchanging Fe and Co atoms andtreated by the coherent potential approximation (CPA).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CP
###Effect of atomic anti-site disorder on the AMR in FeCo alloys|Mingsong Zhang,Bin Peng,Wanli Zhang,Wenxu Zhang###
(1280905, 1280906)
 The anti-site effect was modeled by interchanging Fe and Co atoms andtreated by the coherent potential approximation (CPA).
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Effect of atomic anti-site disorder on the AMR in FeCo alloys|Mingsong Zhang,Bin Peng,Wanli Zhang,Wenxu Zhang###
(1281012, 1281012)
 Atthe same time, we also find that the fourth-order term in the angular dependentresistivity becomes weaker when the disorder increases, resulting fromincreased scattering of the states around the band-crossing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe2O3
###Real-space investigation of polarons in hematite Fe2O3|Jesus Redondo,Michele Reticcioli,Vit Gabriel,Dominik Wrana,Florian Ellinger,Michele Riva,Giada Franceschi,Erik Rheinfrank,Igor Sokolovic,Zdenek Jakub,Florian Kraushofer,Aji Alexander,Laerte L. Patera,Jascha Repp,Michael Schmid,Ulrike Diebold,Gareth S. Parkinson,Cesare Franchini,Pavel Kocan,Martin Setvin###
(1281108, 1281111)
Real-space investigation of polarons in hematite Fe2O3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Real-space investigation of polarons in hematite Fe2O3|Jesus Redondo,Michele Reticcioli,Vit Gabriel,Dominik Wrana,Florian Ellinger,Michele Riva,Giada Franceschi,Erik Rheinfrank,Igor Sokolovic,Zdenek Jakub,Florian Kraushofer,Aji Alexander,Laerte L. Patera,Jascha Repp,Michael Schmid,Ulrike Diebold,Gareth S. Parkinson,Cesare Franchini,Pavel Kocan,Martin Setvin###
(1281114, 1281114)
 In polarizable materials, electronic charge carriers interact with thesurrounding ions, leading to quasiparticle behaviour.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Real-space investigation of polarons in hematite Fe2O3|Jesus Redondo,Michele Reticcioli,Vit Gabriel,Dominik Wrana,Florian Ellinger,Michele Riva,Giada Franceschi,Erik Rheinfrank,Igor Sokolovic,Zdenek Jakub,Florian Kraushofer,Aji Alexander,Laerte L. Patera,Jascha Repp,Michael Schmid,Ulrike Diebold,Gareth S. Parkinson,Cesare Franchini,Pavel Kocan,Martin Setvin###
(1281233, 1281233)
 Here, noncontact atomic force microscopy (nc-AFM)is used to directly image polarons in Fe2O3 at the single quasiparticle limit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe2O3
###Real-space investigation of polarons in hematite Fe2O3|Jesus Redondo,Michele Reticcioli,Vit Gabriel,Dominik Wrana,Florian Ellinger,Michele Riva,Giada Franceschi,Erik Rheinfrank,Igor Sokolovic,Zdenek Jakub,Florian Kraushofer,Aji Alexander,Laerte L. Patera,Jascha Repp,Michael Schmid,Ulrike Diebold,Gareth S. Parkinson,Cesare Franchini,Pavel Kocan,Martin Setvin###
(1281252, 1281255)
 Here, noncontact atomic force microscopy (nc-AFM)is used to directly image polarons in Fe2O3 at the single quasiparticle limit.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

KPF
###Real-space investigation of polarons in hematite Fe2O3|Jesus Redondo,Michele Reticcioli,Vit Gabriel,Dominik Wrana,Florian Ellinger,Michele Riva,Giada Franceschi,Erik Rheinfrank,Igor Sokolovic,Zdenek Jakub,Florian Kraushofer,Aji Alexander,Laerte L. Patera,Jascha Repp,Michael Schmid,Ulrike Diebold,Gareth S. Parkinson,Cesare Franchini,Pavel Kocan,Martin Setvin###
(1281284, 1281286)
A combination of Kelvin probe force microscopy (KPFM) and kinetic Monte Carlo(KM<missing VAR>C) simulations shows that Ti doping dramatically enhances the mobility ofelectron polarons, and density functional theory (DFT) calculations indicatethat a metallic transition state is responsible for the enhancement.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Real-space investigation of polarons in hematite Fe2O3|Jesus Redondo,Michele Reticcioli,Vit Gabriel,Dominik Wrana,Florian Ellinger,Michele Riva,Giada Franceschi,Erik Rheinfrank,Igor Sokolovic,Zdenek Jakub,Florian Kraushofer,Aji Alexander,Laerte L. Patera,Jascha Repp,Michael Schmid,Ulrike Diebold,Gareth S. Parkinson,Cesare Franchini,Pavel Kocan,Martin Setvin###
(1281300, 1281300)
A combination of Kelvin probe force microscopy (KPFM) and kinetic Monte Carlo(KM<missing VAR>C) simulations shows that Ti doping dramatically enhances the mobility ofelectron polarons, and density functional theory (DFT) calculations indicatethat a metallic transition state is responsible for the enhancement.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Real-space investigation of polarons in hematite Fe2O3|Jesus Redondo,Michele Reticcioli,Vit Gabriel,Dominik Wrana,Florian Ellinger,Michele Riva,Giada Franceschi,Erik Rheinfrank,Igor Sokolovic,Zdenek Jakub,Florian Kraushofer,Aji Alexander,Laerte L. Patera,Jascha Repp,Michael Schmid,Ulrike Diebold,Gareth S. Parkinson,Cesare Franchini,Pavel Kocan,Martin Setvin###
(1281302, 1281302)
A combination of Kelvin probe force microscopy (KPFM) and kinetic Monte Carlo(KM<missing VAR>C) simulations shows that Ti doping dramatically enhances the mobility ofelectron polarons, and density functional theory (DFT) calculations indicatethat a metallic transition state is responsible for the enhancement.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ti
###Real-space investigation of polarons in hematite Fe2O3|Jesus Redondo,Michele Reticcioli,Vit Gabriel,Dominik Wrana,Florian Ellinger,Michele Riva,Giada Franceschi,Erik Rheinfrank,Igor Sokolovic,Zdenek Jakub,Florian Kraushofer,Aji Alexander,Laerte L. Patera,Jascha Repp,Michael Schmid,Ulrike Diebold,Gareth S. Parkinson,Cesare Franchini,Pavel Kocan,Martin Setvin###
(1281311, 1281311)
A combination of Kelvin probe force microscopy (KPFM) and kinetic Monte Carlo(KM<missing VAR>C) simulations shows that Ti doping dramatically enhances the mobility ofelectron polarons, and density functional theory (DFT) calculations indicatethat a metallic transition state is responsible for the enhancement.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Real-space investigation of polarons in hematite Fe2O3|Jesus Redondo,Michele Reticcioli,Vit Gabriel,Dominik Wrana,Florian Ellinger,Michele Riva,Giada Franceschi,Erik Rheinfrank,Igor Sokolovic,Zdenek Jakub,Florian Kraushofer,Aji Alexander,Laerte L. Patera,Jascha Repp,Michael Schmid,Ulrike Diebold,Gareth S. Parkinson,Cesare Franchini,Pavel Kocan,Martin Setvin###
(1281371, 1281371)
 Incontrast, hole polarons are significantly less mobile and their hopping ishampered further by the introduction of trapping centres.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Effect of the resonant ac-drive on the spin-dependent recombination of polaron pairs: Relation to organic magnetoresistance|M. E. Raikh###
(1281517, 1281517)
 Recombination from the S spin-state of the pair inpreceded by the beatings between the states S and T<missing VAR>0.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Effect of the resonant ac-drive on the spin-dependent recombination of polaron pairs: Relation to organic magnetoresistance|M. E. Raikh###
(1281546, 1281546)
 Recombination from the S spin-state of the pair inpreceded by the beatings between the states S and T<missing VAR>0.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Effect of the resonant ac-drive on the spin-dependent recombination of polaron pairs: Relation to organic magnetoresistance|M. E. Raikh###
(1281595, 1281595)
 For the case whenrecombination time from S is shorter than the period, we demonstrate that aem weak resonant ac drive, which couples T<missing VAR>0 to T<missing VAR> and T<missing VAR>- affectsdramatically the recombination dynamics and, thus, the current A distinctivecharacteristics of the effect is that the current versus the drive amplitudeexhibits a em maximum.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GeSe
###Electrical transport properties driven by unique bonding configuration in gamma-GeSe|Jeongsu Jang,Joonho Kim,Dongchul Sung,Jong Hyuk Kim,Joong-Eon Jung,Sol Lee,Jinsub Park,Chaewoon Lee,Heesun Bae,Seongil Im,Kibog Park,Young Jai Choi,Suklyun Hong,Kwanpyo Kim###
(1281732, 1281733)
Electrical transport properties driven by unique bonding configuration in gamma-GeSe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

IV
###Electrical transport properties driven by unique bonding configuration in gamma-GeSe|Jeongsu Jang,Joonho Kim,Dongchul Sung,Jong Hyuk Kim,Joong-Eon Jung,Sol Lee,Jinsub Park,Chaewoon Lee,Heesun Bae,Seongil Im,Kibog Park,Young Jai Choi,Suklyun Hong,Kwanpyo Kim###
(1281738, 1281739)
 Group-IV monochalcogenides have recently shown great potential for theirthermoelectric, ferroelectric, and other intriguing properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

IV
###Electrical transport properties driven by unique bonding configuration in gamma-GeSe|Jeongsu Jang,Joonho Kim,Dongchul Sung,Jong Hyuk Kim,Joong-Eon Jung,Sol Lee,Jinsub Park,Chaewoon Lee,Heesun Bae,Seongil Im,Kibog Park,Young Jai Choi,Suklyun Hong,Kwanpyo Kim###
(1281784, 1281785)
 The electricalproperties of group-IV monochalcogenides exhibit a strong dependence on thechalcogen type.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GeTe
###Electrical transport properties driven by unique bonding configuration in gamma-GeSe|Jeongsu Jang,Joonho Kim,Dongchul Sung,Jong Hyuk Kim,Joong-Eon Jung,Sol Lee,Jinsub Park,Chaewoon Lee,Heesun Bae,Seongil Im,Kibog Park,Young Jai Choi,Suklyun Hong,Kwanpyo Kim###
(1281812, 1281813)
 For example, GeTe exhibits high doping concentration, whereasS/Se-based chalcogenides are semiconductors with sizable bandgaps.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S/Se
###Electrical transport properties driven by unique bonding configuration in gamma-GeSe|Jeongsu Jang,Joonho Kim,Dongchul Sung,Jong Hyuk Kim,Joong-Eon Jung,Sol Lee,Jinsub Park,Chaewoon Lee,Heesun Bae,Seongil Im,Kibog Park,Young Jai Choi,Suklyun Hong,Kwanpyo Kim###
(1281827, 1281829)
 For example, GeTe exhibits high doping concentration, whereasS/Se-based chalcogenides are semiconductors with sizable bandgaps.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

GeSe
###Electrical transport properties driven by unique bonding configuration in gamma-GeSe|Jeongsu Jang,Joonho Kim,Dongchul Sung,Jong Hyuk Kim,Joong-Eon Jung,Sol Lee,Jinsub Park,Chaewoon Lee,Heesun Bae,Seongil Im,Kibog Park,Young Jai Choi,Suklyun Hong,Kwanpyo Kim###
(1281868, 1281869)
 Here, weinvestigate the electrical and thermoelectric properties of gamma-GeSe, arecently identified polymorph of GeSe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GeSe
###Electrical transport properties driven by unique bonding configuration in gamma-GeSe|Jeongsu Jang,Joonho Kim,Dongchul Sung,Jong Hyuk Kim,Joong-Eon Jung,Sol Lee,Jinsub Park,Chaewoon Lee,Heesun Bae,Seongil Im,Kibog Park,Young Jai Choi,Suklyun Hong,Kwanpyo Kim###
(1281883, 1281884)
 Here, weinvestigate the electrical and thermoelectric properties of gamma-GeSe, arecently identified polymorph of GeSe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GeSe
###Electrical transport properties driven by unique bonding configuration in gamma-GeSe|Jeongsu Jang,Joonho Kim,Dongchul Sung,Jong Hyuk Kim,Joong-Eon Jung,Sol Lee,Jinsub Park,Chaewoon Lee,Heesun Bae,Seongil Im,Kibog Park,Young Jai Choi,Suklyun Hong,Kwanpyo Kim###
(1281889, 1281890)
 gamma-GeSe exhibits high electricalconductivity (106 S/m) and a relatively low Seebeck coefficient (9.4 u<missing VAR>V/K atroom temperature) owing to its high p<missing VAR>-doping level (5x<missing VAR>1021 cm-3), which is instark contrast to other known GeSe polymorphs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Electrical transport properties driven by unique bonding configuration in gamma-GeSe|Jeongsu Jang,Joonho Kim,Dongchul Sung,Jong Hyuk Kim,Joong-Eon Jung,Sol Lee,Jinsub Park,Chaewoon Lee,Heesun Bae,Seongil Im,Kibog Park,Young Jai Choi,Suklyun Hong,Kwanpyo Kim###
(1281904, 1281904)
 gamma-GeSe exhibits high electricalconductivity (106 S/m) and a relatively low Seebeck coefficient (9.4 u<missing VAR>V/K atroom temperature) owing to its high p<missing VAR>-doping level (5x<missing VAR>1021 cm-3), which is instark contrast to other known GeSe polymorphs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V/K
###Electrical transport properties driven by unique bonding configuration in gamma-GeSe|Jeongsu Jang,Joonho Kim,Dongchul Sung,Jong Hyuk Kim,Joong-Eon Jung,Sol Lee,Jinsub Park,Chaewoon Lee,Heesun Bae,Seongil Im,Kibog Park,Young Jai Choi,Suklyun Hong,Kwanpyo Kim###
(1281925, 1281927)
 gamma-GeSe exhibits high electricalconductivity (106 S/m) and a relatively low Seebeck coefficient (9.4 u<missing VAR>V/K atroom temperature) owing to its high p<missing VAR>-doping level (5x<missing VAR>1021 cm-3), which is instark contrast to other known GeSe polymorphs.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

GeSe
###Electrical transport properties driven by unique bonding configuration in gamma-GeSe|Jeongsu Jang,Joonho Kim,Dongchul Sung,Jong Hyuk Kim,Joong-Eon Jung,Sol Lee,Jinsub Park,Chaewoon Lee,Heesun Bae,Seongil Im,Kibog Park,Young Jai Choi,Suklyun Hong,Kwanpyo Kim###
(1281979, 1281980)
 gamma-GeSe exhibits high electricalconductivity (106 S/m) and a relatively low Seebeck coefficient (9.4 u<missing VAR>V/K atroom temperature) owing to its high p<missing VAR>-doping level (5x<missing VAR>1021 cm-3), which is instark contrast to other known GeSe polymorphs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ge
###Electrical transport properties driven by unique bonding configuration in gamma-GeSe|Jeongsu Jang,Joonho Kim,Dongchul Sung,Jong Hyuk Kim,Joong-Eon Jung,Sol Lee,Jinsub Park,Chaewoon Lee,Heesun Bae,Seongil Im,Kibog Park,Young Jai Choi,Suklyun Hong,Kwanpyo Kim###
(1282010, 1282010)
 Elemental analysis andfirst-principles calculations confirm that the abundant formation of Gevacancies leads to the high p<missing VAR>-doping concentration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GeSe
###Electrical transport properties driven by unique bonding configuration in gamma-GeSe|Jeongsu Jang,Joonho Kim,Dongchul Sung,Jong Hyuk Kim,Joong-Eon Jung,Sol Lee,Jinsub Park,Chaewoon Lee,Heesun Bae,Seongil Im,Kibog Park,Young Jai Choi,Suklyun Hong,Kwanpyo Kim###
(1282073, 1282074)
 Our results demonstrate that gamma-GeSe is a unique polymorphin which the modified local bonding configuration leads to substantiallydifferent physical properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Gd
###Efficient characteristics of exchange coupling and spin-flop transition in Py/Gd bilayer using anisotropic magnetoresistance|Kaiyuan Zhou,Xiang Zhan,Zishuang Li,Haotian Li,Chunjie Yan,Lina Chen,Ronghua Liu###
(1282143, 1282143)
Efficient characteristics of exchange coupling and spin-flop transition in Py/Gd bilayer using anisotropic magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Gd
###Efficient characteristics of exchange coupling and spin-flop transition in Py/Gd bilayer using anisotropic magnetoresistance|Kaiyuan Zhou,Xiang Zhan,Zishuang Li,Haotian Li,Chunjie Yan,Lina Chen,Ronghua Liu###
(1282294, 1282294)
 Here, we quantitatively determine thetemperature dependence of magnetic exchange stiffness APy-Gd and AGd inthe artificially layered ferrimagnet consisting of a Py/Gd bilayer, using ameasurement of anisotropic magnetoresistance (AMR) of the bilayer thin film atdifferent temperatures and magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Gd
###Efficient characteristics of exchange coupling and spin-flop transition in Py/Gd bilayer using anisotropic magnetoresistance|Kaiyuan Zhou,Xiang Zhan,Zishuang Li,Haotian Li,Chunjie Yan,Lina Chen,Ronghua Liu###
(1282299, 1282299)
 Here, we quantitatively determine thetemperature dependence of magnetic exchange stiffness APy-Gd and AGd inthe artificially layered ferrimagnet consisting of a Py/Gd bilayer, using ameasurement of anisotropic magnetoresistance (AMR) of the bilayer thin film atdifferent temperatures and magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Gd
###Efficient characteristics of exchange coupling and spin-flop transition in Py/Gd bilayer using anisotropic magnetoresistance|Kaiyuan Zhou,Xiang Zhan,Zishuang Li,Haotian Li,Chunjie Yan,Lina Chen,Ronghua Liu###
(1282320, 1282320)
 Here, we quantitatively determine thetemperature dependence of magnetic exchange stiffness APy-Gd and AGd inthe artificially layered ferrimagnet consisting of a Py/Gd bilayer, using ameasurement of anisotropic magnetoresistance (AMR) of the bilayer thin film atdifferent temperatures and magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Gd
###Efficient characteristics of exchange coupling and spin-flop transition in Py/Gd bilayer using anisotropic magnetoresistance|Kaiyuan Zhou,Xiang Zhan,Zishuang Li,Haotian Li,Chunjie Yan,Lina Chen,Ronghua Liu###
(1282382, 1282382)
 The obtained temperature dependenceof APy-Gd and AGd exhibit a scaling power law with the magnetization ofGd.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Gd
###Efficient characteristics of exchange coupling and spin-flop transition in Py/Gd bilayer using anisotropic magnetoresistance|Kaiyuan Zhou,Xiang Zhan,Zishuang Li,Haotian Li,Chunjie Yan,Lina Chen,Ronghua Liu###
(1282387, 1282387)
 The obtained temperature dependenceof APy-Gd and AGd exhibit a scaling power law with the magnetization ofGd.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Gd
###Efficient characteristics of exchange coupling and spin-flop transition in Py/Gd bilayer using anisotropic magnetoresistance|Kaiyuan Zhou,Xiang Zhan,Zishuang Li,Haotian Li,Chunjie Yan,Lina Chen,Ronghua Liu###
(1282408, 1282408)
 The obtained temperature dependenceof APy-Gd and AGd exhibit a scaling power law with the magnetization ofGd.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Gd
###Efficient characteristics of exchange coupling and spin-flop transition in Py/Gd bilayer using anisotropic magnetoresistance|Kaiyuan Zhou,Xiang Zhan,Zishuang Li,Haotian Li,Chunjie Yan,Lina Chen,Ronghua Liu###
(1282485, 1282485)
 Additionally, the experimentalresults are well reproduced by micromagnetic simulations with the obtainedparameters APy-Gd and AGd, which further confirms the reliability of thiseasily accessible technique.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Gd
###Efficient characteristics of exchange coupling and spin-flop transition in Py/Gd bilayer using anisotropic magnetoresistance|Kaiyuan Zhou,Xiang Zhan,Zishuang Li,Haotian Li,Chunjie Yan,Lina Chen,Ronghua Liu###
(1282490, 1282490)
 Additionally, the experimentalresults are well reproduced by micromagnetic simulations with the obtainedparameters APy-Gd and AGd, which further confirms the reliability of thiseasily accessible technique.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Dy4RhAl
###Magnetic behavior of cubic Dy4RhAl with respect to isostructural Dy4PtAl, revealing a novel 4f d-band interaction|K. K. Iyer,S. Matteppanavar,S. Dodamani,K. Maiti,E. V. Sampathkumaran###
(1282531, 1282534)
Magnetic behavior of cubic Dy4RhAl with respect to isostructural Dy4PtAl, revealing a novel 4f d<missing VAR>-band interaction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 4, 'f', 0],[83.0, 3, 'sites', 1],[201.0, 18, 'K', 3]

Dy4PtAl
###Magnetic behavior of cubic Dy4RhAl with respect to isostructural Dy4PtAl, revealing a novel 4f d-band interaction|K. K. Iyer,S. Matteppanavar,S. Dodamani,K. Maiti,E. V. Sampathkumaran###
(1282544, 1282547)
Magnetic behavior of cubic Dy4RhAl with respect to isostructural Dy4PtAl, revealing a novel 4f d<missing VAR>-band interaction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 4, 'f', 0],[70.0, 3, 'sites', 1],[188.0, 18, 'K', 3]

Dy4RhAl
###Magnetic behavior of cubic Dy4RhAl with respect to isostructural Dy4PtAl, revealing a novel 4f d-band interaction|K. K. Iyer,S. Matteppanavar,S. Dodamani,K. Maiti,E. V. Sampathkumaran###
(1282594, 1282597)
 We have investigated for the first time the magnetic behaviour of anintermetallic compound, Dy4RhAl, crystallizing in Gd4RhIn type cubic structurecontaining 3 sites for rare-earth (R), by several bulk measurements down to 1.8K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 4, 'f', 1],[20.0, 3, 'sites', 0],[138.0, 18, 'K', 2]

Gd4RhIn
###Magnetic behavior of cubic Dy4RhAl with respect to isostructural Dy4PtAl, revealing a novel 4f d-band interaction|K. K. Iyer,S. Matteppanavar,S. Dodamani,K. Maiti,E. V. Sampathkumaran###
(1282604, 1282607)
 We have investigated for the first time the magnetic behaviour of anintermetallic compound, Dy4RhAl, crystallizing in Gd4RhIn type cubic structurecontaining 3 sites for rare-earth (R), by several bulk measurements down to 1.8K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 4, 'f', 1],[10.0, 3, 'sites', 0],[128.0, 18, 'K', 2]

K
###Magnetic behavior of cubic Dy4RhAl with respect to isostructural Dy4PtAl, revealing a novel 4f d-band interaction|K. K. Iyer,S. Matteppanavar,S. Dodamani,K. Maiti,E. V. Sampathkumaran###
(1282645, 1282645)
 We have investigated for the first time the magnetic behaviour of anintermetallic compound, Dy4RhAl, crystallizing in Gd4RhIn type cubic structurecontaining 3 sites for rare-earth (R), by several bulk measurements down to 1.8K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 4, 'f', 1],[28.0, 3, 'sites', 0],[90.0, 18, 'K', 2]

Dy
###Magnetic behavior of cubic Dy4RhAl with respect to isostructural Dy4PtAl, revealing a novel 4f d-band interaction|K. K. Iyer,S. Matteppanavar,S. Dodamani,K. Maiti,E. V. Sampathkumaran###
(1282668, 1282668)
 This work is motivated by the fact that the isostructural Dy compound in theR<missing VAR>4PtAl family surprisingly orders ferromagnetically unlike other members ofthis series, which order antiferromagnetically.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 4, 'f', 2],[51.0, 3, 'sites', 1],[67.0, 18, 'K', 1]

PtAl
###Magnetic behavior of cubic Dy4RhAl with respect to isostructural Dy4PtAl, revealing a novel 4f d-band interaction|K. K. Iyer,S. Matteppanavar,S. Dodamani,K. Maiti,E. V. Sampathkumaran###
(1282679, 1282680)
 This work is motivated by the fact that the isostructural Dy compound in theR<missing VAR>4PtAl family surprisingly orders ferromagnetically unlike other members ofthis series, which order antiferromagnetically.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 4, 'f', 2],[62.0, 3, 'sites', 1],[55.0, 18, 'K', 1]

RhAl
###Magnetic behavior of cubic Dy4RhAl with respect to isostructural Dy4PtAl, revealing a novel 4f d-band interaction|K. K. Iyer,S. Matteppanavar,S. Dodamani,K. Maiti,E. V. Sampathkumaran###
(1282755, 1282756)
 The results reveal that thetitle compound undergoes antiferromagnetic order at about 18 K, similar toother heavy R<missing VAR> members of R<missing VAR>4RhAl family, unlike its Pt counterpart, indicating asubtle difference in the role of conduction electrons to decide magnetism ofthese compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[200.0, 4, 'f', 3],[138.0, 3, 'sites', 2],[20.0, 18, 'K', 0]

Pt
###Magnetic behavior of cubic Dy4RhAl with respect to isostructural Dy4PtAl, revealing a novel 4f d-band interaction|K. K. Iyer,S. Matteppanavar,S. Dodamani,K. Maiti,E. V. Sampathkumaran###
(1282765, 1282765)
 The results reveal that thetitle compound undergoes antiferromagnetic order at about 18 K, similar toother heavy R<missing VAR> members of R<missing VAR>4RhAl family, unlike its Pt counterpart, indicating asubtle difference in the role of conduction electrons to decide magnetism ofthese compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[210.0, 4, 'f', 3],[148.0, 3, 'sites', 2],[30.0, 18, 'K', 0]

N
###Ultrafast electron-phonon scattering in antiferromagnetic Dirac-semimetals|Marius Weber,Kai Leckron,Libor Šmejkal,Jairo sinova,Baerbel Rethfeld,Hans Christian Schneider###
(1283000, 1283000)
 Recent novel topological antiferromagnetic systems have shown a strongmagnetoresistance effects driven by Dirac fermion characteristics whosetopology can be dynamically controlled by the Neel vector orientation.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiBi3
###Josephson coupling driven magnetoresistance in superconducting NiBi3 nanowires|Laxmipriya Nanda,Bidyadhar Das,Subhashree Sahoo,Pratap K Sahoo,Kartik Senapati###
(1283295, 1283297)
Josephson coupling driven magnetoresistance in superconducting NiBi3 nanowires.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 100, 'nm', 2],[324.0, 45, ',', 10]

NiBi3
###Josephson coupling driven magnetoresistance in superconducting NiBi3 nanowires|Laxmipriya Nanda,Bidyadhar Das,Subhashree Sahoo,Pratap K Sahoo,Kartik Senapati###
(1283323, 1283325)
 We present results of magnetoresistance (MR) measurements in granular NiBi3nanowires in the resistive state below the superconducting transitiontemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 100, 'nm', 1],[296.0, 45, ',', 9]

NiBi3
###Josephson coupling driven magnetoresistance in superconducting NiBi3 nanowires|Laxmipriya Nanda,Bidyadhar Das,Subhashree Sahoo,Pratap K Sahoo,Kartik Senapati###
(1283381, 1283383)
 MR of 100 nm wide nanowires fabricated by focused Ion beamlithography from granular films of NiBi3 with and without magnetic Ni impuritywere compared.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 100, 'nm', 0],[238.0, 45, ',', 8]

Ni
###Josephson coupling driven magnetoresistance in superconducting NiBi3 nanowires|Laxmipriya Nanda,Bidyadhar Das,Subhashree Sahoo,Pratap K Sahoo,Kartik Senapati###
(1283393, 1283393)
 MR of 100 nm wide nanowires fabricated by focused Ion beamlithography from granular films of NiBi3 with and without magnetic Ni impuritywere compared.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 100, 'nm', 0],[228.0, 45, ',', 8]

Ni
###Josephson coupling driven magnetoresistance in superconducting NiBi3 nanowires|Laxmipriya Nanda,Bidyadhar Das,Subhashree Sahoo,Pratap K Sahoo,Kartik Senapati###
(1283415, 1283415)
 The nanowire containing high concentration of Ni impurity showedoscillations in MR and also exhibited a negative MR in certain temperature andfield range.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 100, 'nm', 1],[206.0, 45, ',', 7]

Ni
###Josephson coupling driven magnetoresistance in superconducting NiBi3 nanowires|Laxmipriya Nanda,Bidyadhar Das,Subhashree Sahoo,Pratap K Sahoo,Kartik Senapati###
(1283478, 1283478)
 None of these effects were observed in the nanowire with no Niimpurities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 100, 'nm', 2],[143.0, 45, ',', 6]

NiBi3
###Josephson coupling driven magnetoresistance in superconducting NiBi3 nanowires|Laxmipriya Nanda,Bidyadhar Das,Subhashree Sahoo,Pratap K Sahoo,Kartik Senapati###
(1283520, 1283522)
 Therefore, we argue that this effect is a result of the randomJosephson couplings realized across superconducting NiBi3 grains via magneticinter grain regions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 100, 'nm', 3],[99.0, 45, ',', 5]

B
###Josephson coupling driven magnetoresistance in superconducting NiBi3 nanowires|Laxmipriya Nanda,Bidyadhar Das,Subhashree Sahoo,Pratap K Sahoo,Kartik Senapati###
(1283618, 1283618)
B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[264.0, 100, 'nm', 7],[3.0, 45, ',', 1]

CdGeAs2
###A Trivial Geometrical Phase of an Electron Wavefunction in a Direct Band Gap Semiconductor CdGeAs$_{2}$|Vikas Saini,Souvik Sasmal,Vikash Sharma,Suman Nandi,Gourav Dwari,Bishal Maity,Ruta Kulkarni,Arumugam Thamizhavel###
(1283668, 1283671)
A Trivial Geometrical Phase of an Electron Wavefunction in a Direct Band Gap Semiconductor CdGeAs2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 136, '%', 3],[110.0, 1.8, 'K', 3],[121.0, 14, 'T', 3],[186.0, 15, 'K', 5],[335.0, 3, 'D', 7]

CdGeAs2
###A Trivial Geometrical Phase of an Electron Wavefunction in a Direct Band Gap Semiconductor CdGeAs$_{2}$|Vikas Saini,Souvik Sasmal,Vikash Sharma,Suman Nandi,Gourav Dwari,Bishal Maity,Ruta Kulkarni,Arumugam Thamizhavel###
(1283741, 1283744)
 Here, we discussthe electrical transport properties of a direct energy gap semiconductorCdGeAs2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 136, '%', 1],[37.0, 1.8, 'K', 1],[48.0, 14, 'T', 1],[113.0, 15, 'K', 3],[262.0, 3, 'D', 5]

B2.18
###A Trivial Geometrical Phase of an Electron Wavefunction in a Direct Band Gap Semiconductor CdGeAs$_{2}$|Vikas Saini,Souvik Sasmal,Vikash Sharma,Suman Nandi,Gourav Dwari,Bishal Maity,Ruta Kulkarni,Arumugam Thamizhavel###
(1283809, 1283810)
 The observed transverse magnetoresistance (MR) is found to bearound 136% at a temperature of 1.8 K and a magnetic field of 14 T, followingthe semiclassical exponent MR sim B2.18.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 136, '%', 0],[28.0, 1.8, 'K', 0],[17.0, 14, 'T', 0],[47.0, 15, 'K', 2],[196.0, 3, 'D', 4]

W
###A Trivial Geometrical Phase of an Electron Wavefunction in a Direct Band Gap Semiconductor CdGeAs$_{2}$|Vikas Saini,Souvik Sasmal,Vikash Sharma,Suman Nandi,Gourav Dwari,Bishal Maity,Ruta Kulkarni,Arumugam Thamizhavel###
(1283900, 1283900)
 Below 15 K, with decreasing magnetic field, the MR increases,leading to the well known quantum interference phenomenon weak localization(WL).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 136, '%', 2],[119.0, 1.8, 'K', 2],[108.0, 14, 'T', 2],[43.0, 15, 'K', 0],[106.0, 3, 'D', 2]

H
###A Trivial Geometrical Phase of an Electron Wavefunction in a Direct Band Gap Semiconductor CdGeAs$_{2}$|Vikas Saini,Souvik Sasmal,Vikash Sharma,Suman Nandi,Gourav Dwari,Bishal Maity,Ruta Kulkarni,Arumugam Thamizhavel###
(1283931, 1283931)
 The analysis of the magnetoconductivity data based on theHikami-Larkin-Nagaoka (HL<missing VAR>N) model unveils three dimensional nature of the WL<missing VAR>and the weak spin-orbit coupling in CdGeAs2.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 136, '%', 3],[150.0, 1.8, 'K', 3],[139.0, 14, 'T', 3],[74.0, 15, 'K', 1],[75.0, 3, 'D', 1]

N
###A Trivial Geometrical Phase of an Electron Wavefunction in a Direct Band Gap Semiconductor CdGeAs$_{2}$|Vikas Saini,Souvik Sasmal,Vikash Sharma,Suman Nandi,Gourav Dwari,Bishal Maity,Ruta Kulkarni,Arumugam Thamizhavel###
(1283933, 1283933)
 The analysis of the magnetoconductivity data based on theHikami-Larkin-Nagaoka (HL<missing VAR>N) model unveils three dimensional nature of the WL<missing VAR>and the weak spin-orbit coupling in CdGeAs2.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 136, '%', 3],[152.0, 1.8, 'K', 3],[141.0, 14, 'T', 3],[76.0, 15, 'K', 1],[73.0, 3, 'D', 1]

W
###A Trivial Geometrical Phase of an Electron Wavefunction in a Direct Band Gap Semiconductor CdGeAs$_{2}$|Vikas Saini,Souvik Sasmal,Vikash Sharma,Suman Nandi,Gourav Dwari,Bishal Maity,Ruta Kulkarni,Arumugam Thamizhavel###
(1283950, 1283950)
 The analysis of the magnetoconductivity data based on theHikami-Larkin-Nagaoka (HL<missing VAR>N) model unveils three dimensional nature of the WL<missing VAR>and the weak spin-orbit coupling in CdGeAs2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 136, '%', 3],[169.0, 1.8, 'K', 3],[158.0, 14, 'T', 3],[93.0, 15, 'K', 1],[56.0, 3, 'D', 1]

CdGeAs2
###A Trivial Geometrical Phase of an Electron Wavefunction in a Direct Band Gap Semiconductor CdGeAs$_{2}$|Vikas Saini,Souvik Sasmal,Vikash Sharma,Suman Nandi,Gourav Dwari,Bishal Maity,Ruta Kulkarni,Arumugam Thamizhavel###
(1283968, 1283971)
 The analysis of the magnetoconductivity data based on theHikami-Larkin-Nagaoka (HL<missing VAR>N) model unveils three dimensional nature of the WL<missing VAR>and the weak spin-orbit coupling in CdGeAs2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[197.0, 136, '%', 3],[187.0, 1.8, 'K', 3],[176.0, 14, 'T', 3],[111.0, 15, 'K', 1],[35.0, 3, 'D', 1]

W
###A Trivial Geometrical Phase of an Electron Wavefunction in a Direct Band Gap Semiconductor CdGeAs$_{2}$|Vikas Saini,Souvik Sasmal,Vikash Sharma,Suman Nandi,Gourav Dwari,Bishal Maity,Ruta Kulkarni,Arumugam Thamizhavel###
(1284017, 1284017)
 The phase coherence lengthfollows the L<missing VAR>phi sim T<missing VAR>-0.66 power law, which exhibits the 3Dnature of the observed WL<missing VAR> feature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[246.0, 136, '%', 4],[236.0, 1.8, 'K', 4],[225.0, 14, 'T', 4],[160.0, 15, 'K', 2],[11.0, 3, 'D', 0]

In
###Lectures on spintronics and magnonincs|M. Mazanov,V. A. Shklovskij###
(1284042, 1284042)
 In this series of lectures, we discuss the basic theoretical concepts ofmagnonics and spintronics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

AlGaAs/GaAs
###Magnetoresistive RAM with n-doped AlGaAs/GaAs writing/reading channels|Sushmita Saha,Deepak Sain,Alestin Mawrie###
(1284351, 1284356)
Magnetoresistive RAM with n<missing VAR>-doped AlGaAs/GaAs writing/reading channels.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

AlGaAs/GaAs
###Magnetoresistive RAM with n-doped AlGaAs/GaAs writing/reading channels|Sushmita Saha,Deepak Sain,Alestin Mawrie###
(1284385, 1284390)
 We show that the tunable gate voltage in n<missing VAR>-doped AlGaAs/GaAs Q<missing VAR>W (quantumwell) is a key in designing an efficient and ultrafast MRAM<missing VAR> (magnetoresistiverandom access memory).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

W
###Magnetoresistive RAM with n-doped AlGaAs/GaAs writing/reading channels|Sushmita Saha,Deepak Sain,Alestin Mawrie###
(1284393, 1284393)
 We show that the tunable gate voltage in n<missing VAR>-doped AlGaAs/GaAs Q<missing VAR>W (quantumwell) is a key in designing an efficient and ultrafast MRAM<missing VAR> (magnetoresistiverandom access memory).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co/Cu/Co
###Aging effects in critical behavior of Heisenberg anisotropic ultrathin films|Marina M. Boldyreva,Pavel V. Prudnikov,Vladimir V. Prudnikov,Marina V. Mamonova,Vadim O. Borzilov,Natalia I. Piskunova###
(1284749, 1284753)
 The nonequilibrium behavior of Co/Cu/Co and Pt/Co/Cu/Co/Pt multilayerstructures was studied by the Monte Carlo method for various types of magneticanisotropy.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Pt/Co/Cu/Co/Pt
###Aging effects in critical behavior of Heisenberg anisotropic ultrathin films|Marina M. Boldyreva,Pavel V. Prudnikov,Vladimir V. Prudnikov,Marina V. Mamonova,Vadim O. Borzilov,Natalia I. Piskunova###
(1284757, 1284765)
 The nonequilibrium behavior of Co/Cu/Co and Pt/Co/Cu/Co/Pt multilayerstructures was studied by the Monte Carlo method for various types of magneticanisotropy.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Ru3
###Unconventional anomalous Hall effect in epitaxially stabilized orthorhombic Ru$^{3+}$ perovskite thin films|L. -F. Zhang,T. C. Fujita,Y. Masutake,M. Kawamura,T. Arima,H. Kumigashira,M. Tokunaga,M. Kawasaki###
(1285096, 1285097)
Unconventional anomalous Hall effect in epitaxially stabilized orthorhombic Ru3 perovskite thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[224.0, 1.3, 'T', 4],[227.0, 1, 'K', 4]

In
###Unconventional anomalous Hall effect in epitaxially stabilized orthorhombic Ru$^{3+}$ perovskite thin films|L. -F. Zhang,T. C. Fujita,Y. Masutake,M. Kawamura,T. Arima,H. Kumigashira,M. Tokunaga,M. Kawasaki###
(1285208, 1285208)
 In this study, we demonstrate anepitaxial stabilization of orthorhombic Ru3 perovskite oxides LaRuO3and NdRuO3, and their magnetotransport properties that reflect thedifference between non-magnetic La3 and magnetic Nd3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 1.3, 'T', 1],[116.0, 1, 'K', 1]

Ru3
###Unconventional anomalous Hall effect in epitaxially stabilized orthorhombic Ru$^{3+}$ perovskite thin films|L. -F. Zhang,T. C. Fujita,Y. Masutake,M. Kawamura,T. Arima,H. Kumigashira,M. Tokunaga,M. Kawasaki###
(1285230, 1285231)
 In this study, we demonstrate anepitaxial stabilization of orthorhombic Ru3 perovskite oxides LaRuO3and NdRuO3, and their magnetotransport properties that reflect thedifference between non-magnetic La3 and magnetic Nd3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 1.3, 'T', 1],[93.0, 1, 'K', 1]

LaRuO3
###Unconventional anomalous Hall effect in epitaxially stabilized orthorhombic Ru$^{3+}$ perovskite thin films|L. -F. Zhang,T. C. Fujita,Y. Masutake,M. Kawamura,T. Arima,H. Kumigashira,M. Tokunaga,M. Kawasaki###
(1285237, 1285240)
 In this study, we demonstrate anepitaxial stabilization of orthorhombic Ru3 perovskite oxides LaRuO3and NdRuO3, and their magnetotransport properties that reflect thedifference between non-magnetic La3 and magnetic Nd3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 1.3, 'T', 1],[84.0, 1, 'K', 1]

NdRuO3
###Unconventional anomalous Hall effect in epitaxially stabilized orthorhombic Ru$^{3+}$ perovskite thin films|L. -F. Zhang,T. C. Fujita,Y. Masutake,M. Kawamura,T. Arima,H. Kumigashira,M. Tokunaga,M. Kawasaki###
(1285245, 1285248)
 In this study, we demonstrate anepitaxial stabilization of orthorhombic Ru3 perovskite oxides LaRuO3and NdRuO3, and their magnetotransport properties that reflect thedifference between non-magnetic La3 and magnetic Nd3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 1.3, 'T', 1],[76.0, 1, 'K', 1]

La3
###Unconventional anomalous Hall effect in epitaxially stabilized orthorhombic Ru$^{3+}$ perovskite thin films|L. -F. Zhang,T. C. Fujita,Y. Masutake,M. Kawamura,T. Arima,H. Kumigashira,M. Tokunaga,M. Kawasaki###
(1285274, 1285275)
 In this study, we demonstrate anepitaxial stabilization of orthorhombic Ru3 perovskite oxides LaRuO3and NdRuO3, and their magnetotransport properties that reflect thedifference between non-magnetic La3 and magnetic Nd3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 1.3, 'T', 1],[49.0, 1, 'K', 1]

Nd3
###Unconventional anomalous Hall effect in epitaxially stabilized orthorhombic Ru$^{3+}$ perovskite thin films|L. -F. Zhang,T. C. Fujita,Y. Masutake,M. Kawamura,T. Arima,H. Kumigashira,M. Tokunaga,M. Kawasaki###
(1285281, 1285282)
 In this study, we demonstrate anepitaxial stabilization of orthorhombic Ru3 perovskite oxides LaRuO3and NdRuO3, and their magnetotransport properties that reflect thedifference between non-magnetic La3 and magnetic Nd3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 1.3, 'T', 1],[42.0, 1, 'K', 1]

NdRuO3
###Unconventional anomalous Hall effect in epitaxially stabilized orthorhombic Ru$^{3+}$ perovskite thin films|L. -F. Zhang,T. C. Fujita,Y. Masutake,M. Kawamura,T. Arima,H. Kumigashira,M. Tokunaga,M. Kawasaki###
(1285328, 1285331)
 Above all, anunconventional anomalous Hall effect accompanied by an inflection point inmagnetoresistance is observed around 1.3 T below 1 K for NdRuO3, which isascribed to topological Hall effect possibly due to a non-coplanar spin textureon Nd3 sublattice.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 1.3, 'T', 0],[4.0, 1, 'K', 0]

Nd3
###Unconventional anomalous Hall effect in epitaxially stabilized orthorhombic Ru$^{3+}$ perovskite thin films|L. -F. Zhang,T. C. Fujita,Y. Masutake,M. Kawamura,T. Arima,H. Kumigashira,M. Tokunaga,M. Kawasaki###
(1285368, 1285369)
 Above all, anunconventional anomalous Hall effect accompanied by an inflection point inmagnetoresistance is observed around 1.3 T below 1 K for NdRuO3, which isascribed to topological Hall effect possibly due to a non-coplanar spin textureon Nd3 sublattice.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 1.3, 'T', 0],[44.0, 1, 'K', 0]

Co40Fe40B20
###Piezostrain -- a local handle to control gyrotropic dynamics in magnetic vortices|Vadym Iurchuk,Serhii Sorokin,Jürgen Lindner,Jürgen Fassbender,Attila Kákay###
(1285503, 1285508)
 We present a study of the piezostrain-tunable gyrotropic dynamics inCo40Fe40B20 vortex microstructures fabricated on a 0.7PMN-0.3PT<missing VAR>single crystalline substrate.
Featurization terminated normally.
0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 0.7, 'PMN', 0]

P
###Piezostrain -- a local handle to control gyrotropic dynamics in magnetic vortices|Vadym Iurchuk,Serhii Sorokin,Jürgen Lindner,Jürgen Fassbender,Attila Kákay###
(1285522, 1285522)
 We present a study of the piezostrain-tunable gyrotropic dynamics inCo40Fe40B20 vortex microstructures fabricated on a 0.7PMN-0.3PT<missing VAR>single crystalline substrate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 0.7, 'PMN', 0]

P
###Piezostrain -- a local handle to control gyrotropic dynamics in magnetic vortices|Vadym Iurchuk,Serhii Sorokin,Jürgen Lindner,Jürgen Fassbender,Attila Kákay###
(1285607, 1285607)
 With increased voltage applied to the PM<missing VAR>N-PT<missing VAR>, weobserve a gradual decrease of the vortex core gyrotropic frequency associatedwith the strain-induced magnetoelastic energy contribution.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 0.7, 'PMN', 2]

N
###Piezostrain -- a local handle to control gyrotropic dynamics in magnetic vortices|Vadym Iurchuk,Serhii Sorokin,Jürgen Lindner,Jürgen Fassbender,Attila Kákay###
(1285609, 1285609)
 With increased voltage applied to the PM<missing VAR>N-PT<missing VAR>, weobserve a gradual decrease of the vortex core gyrotropic frequency associatedwith the strain-induced magnetoelastic energy contribution.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 0.7, 'PMN', 2]

P
###Piezostrain -- a local handle to control gyrotropic dynamics in magnetic vortices|Vadym Iurchuk,Serhii Sorokin,Jürgen Lindner,Jürgen Fassbender,Attila Kákay###
(1285611, 1285611)
 With increased voltage applied to the PM<missing VAR>N-PT<missing VAR>, weobserve a gradual decrease of the vortex core gyrotropic frequency associatedwith the strain-induced magnetoelastic energy contribution.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 0.7, 'PMN', 2]

(CISS)
###Spontaneous spin selectivity and linear magnetoelectric effect in chiral molecules|Kouta Kondou,Shinji Miwa,Daigo Miyajima###
(1285836, 1285841)
 Chirality-induced spin selectivity (CISS) has been extensively studied overthe past two decades.
Featurization successful!
0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CISS
###Spontaneous spin selectivity and linear magnetoelectric effect in chiral molecules|Kouta Kondou,Shinji Miwa,Daigo Miyajima###
(1285898, 1285901)
 While current-induced spin polarization in chiralmolecules is widely recognized as the fundamental principle of the CISS, only afew studies have been reported on bias-current-free CISS, where there is nobias electric current in chiral molecules.
Featurization terminated normally.
0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CISS
###Spontaneous spin selectivity and linear magnetoelectric effect in chiral molecules|Kouta Kondou,Shinji Miwa,Daigo Miyajima###
(1285927, 1285930)
 While current-induced spin polarization in chiralmolecules is widely recognized as the fundamental principle of the CISS, only afew studies have been reported on bias-current-free CISS, where there is nobias electric current in chiral molecules.
Featurization terminated normally.
0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spontaneous spin selectivity and linear magnetoelectric effect in chiral molecules|Kouta Kondou,Shinji Miwa,Daigo Miyajima###
(1285955, 1285955)
 In this paper, we discuss themicroscopic origin of bias-free CISS using chiral molecule/ferromagnet bilayersystems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CISS
###Spontaneous spin selectivity and linear magnetoelectric effect in chiral molecules|Kouta Kondou,Shinji Miwa,Daigo Miyajima###
(1285979, 1285982)
 In this paper, we discuss themicroscopic origin of bias-free CISS using chiral molecule/ferromagnet bilayersystems.
Featurization terminated normally.
0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CIP
###Spontaneous spin selectivity and linear magnetoelectric effect in chiral molecules|Kouta Kondou,Shinji Miwa,Daigo Miyajima###
(1286026, 1286028)
 Recent studies on the chirality-induced exchange bias andcurrent-in-plane magnetoresistance (CIP-MR) effects indicate that chiralmolecules possess thermally driven broken-time-reversal symmetry at theinterface, which induces bias-current-free CISS, i.e.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CISS
###Spontaneous spin selectivity and linear magnetoelectric effect in chiral molecules|Kouta Kondou,Shinji Miwa,Daigo Miyajima###
(1286077, 1286080)
 Recent studies on the chirality-induced exchange bias andcurrent-in-plane magnetoresistance (CIP-MR) effects indicate that chiralmolecules possess thermally driven broken-time-reversal symmetry at theinterface, which induces bias-current-free CISS, i.e.
Featurization terminated normally.
0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CISS
###Spontaneous spin selectivity and linear magnetoelectric effect in chiral molecules|Kouta Kondou,Shinji Miwa,Daigo Miyajima###
(1286154, 1286157)
 We also discuss the possibility of the linearmagnetoelectric effect of chiral molecules at the interface and its potentialimpact on the observed CISS phenomena.
Featurization terminated normally.
0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZrTe5
###Perpendicular in-plane negative magnetoresistance in ZrTe5|Ning Ma,Xiao-Bin Qiang,Zhijian Xie,Yu Zhang,Shili Yan,Shimin Cao,Peipei Wang,Liyuan Zhang,G. D. Gu,Qiang Li,X. C. Xie,Hai-Zhou Lu,Xinjian Wei,Jian-Hao Chen###
(1286182, 1286184)
Perpendicular in-plane negative magnetoresistance in ZrTe5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Perpendicular in-plane negative magnetoresistance in ZrTe5|Ning Ma,Xiao-Bin Qiang,Zhijian Xie,Yu Zhang,Shili Yan,Shimin Cao,Peipei Wang,Liyuan Zhang,G. D. Gu,Qiang Li,X. C. Xie,Hai-Zhou Lu,Xinjian Wei,Jian-Hao Chen###
(1286237, 1286237)
 The unique band structure in topological materials frequently results inunusual magneto-transport phenomena, one of which is in-plane longitudinalnegative magnetoresistance (NMR) with the magnetic field aligned parallel tothe electrical current direction.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Perpendicular in-plane negative magnetoresistance in ZrTe5|Ning Ma,Xiao-Bin Qiang,Zhijian Xie,Yu Zhang,Shili Yan,Shimin Cao,Peipei Wang,Liyuan Zhang,G. D. Gu,Qiang Li,X. C. Xie,Hai-Zhou Lu,Xinjian Wei,Jian-Hao Chen###
(1286268, 1286268)
 This NMR is widely considered as a hallmarkof chiral anomaly in topological materials.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Perpendicular in-plane negative magnetoresistance in ZrTe5|Ning Ma,Xiao-Bin Qiang,Zhijian Xie,Yu Zhang,Shili Yan,Shimin Cao,Peipei Wang,Liyuan Zhang,G. D. Gu,Qiang Li,X. C. Xie,Hai-Zhou Lu,Xinjian Wei,Jian-Hao Chen###
(1286315, 1286315)
 Here we report the observation ofin-plane NMR in the topological material ZrTe5 when the in-plane magnetic fieldis both parallel and perpendicular to the current direction, revealing anunusual case of quantum transport beyond the chiral anomaly.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZrTe5
###Perpendicular in-plane negative magnetoresistance in ZrTe5|Ning Ma,Xiao-Bin Qiang,Zhijian Xie,Yu Zhang,Shili Yan,Shimin Cao,Peipei Wang,Liyuan Zhang,G. D. Gu,Qiang Li,X. C. Xie,Hai-Zhou Lu,Xinjian Wei,Jian-Hao Chen###
(1286327, 1286329)
 Here we report the observation ofin-plane NMR in the topological material ZrTe5 when the in-plane magnetic fieldis both parallel and perpendicular to the current direction, revealing anunusual case of quantum transport beyond the chiral anomaly.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Perpendicular in-plane negative magnetoresistance in ZrTe5|Ning Ma,Xiao-Bin Qiang,Zhijian Xie,Yu Zhang,Shili Yan,Shimin Cao,Peipei Wang,Liyuan Zhang,G. D. Gu,Qiang Li,X. C. Xie,Hai-Zhou Lu,Xinjian Wei,Jian-Hao Chen###
(1286439, 1286439)
 We find that ageneral theoretical model, which considers the combined effect of Berrycurvature and orbital moment, can quantitatively explain this in-plane NMR.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Perpendicular in-plane negative magnetoresistance in ZrTe5|Ning Ma,Xiao-Bin Qiang,Zhijian Xie,Yu Zhang,Shili Yan,Shimin Cao,Peipei Wang,Liyuan Zhang,G. D. Gu,Qiang Li,X. C. Xie,Hai-Zhou Lu,Xinjian Wei,Jian-Hao Chen###
(1286467, 1286467)
 Ourresults provide new insights into the understanding of in-plane NMR intopological materials.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt/Y3Fe5O12
###Spin Hall magnetoresistance in Pt/Y$_{3}$Fe$_{5}$O$_{12}$ bilayers grown on Si and Gd$_{3}$Ga$_{5}$O$_{12}$ substrates|Kenta Fukushima,Kohei Ueda,Naoki Moriuchi,Takanori Kida,Masayuki Hagiwara,Jobu Matsuno###
(1286495, 1286502)
Spin Hall magnetoresistance in Pt/Y3Fe5O12 bilayers grown on Si and Gd3Ga5O12 substrates.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Si
###Spin Hall magnetoresistance in Pt/Y$_{3}$Fe$_{5}$O$_{12}$ bilayers grown on Si and Gd$_{3}$Ga$_{5}$O$_{12}$ substrates|Kenta Fukushima,Kohei Ueda,Naoki Moriuchi,Takanori Kida,Masayuki Hagiwara,Jobu Matsuno###
(1286510, 1286510)
Spin Hall magnetoresistance in Pt/Y3Fe5O12 bilayers grown on Si and Gd3Ga5O12 substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Gd3Ga5O12
###Spin Hall magnetoresistance in Pt/Y$_{3}$Fe$_{5}$O$_{12}$ bilayers grown on Si and Gd$_{3}$Ga$_{5}$O$_{12}$ substrates|Kenta Fukushima,Kohei Ueda,Naoki Moriuchi,Takanori Kida,Masayuki Hagiwara,Jobu Matsuno###
(1286514, 1286519)
Spin Hall magnetoresistance in Pt/Y3Fe5O12 bilayers grown on Si and Gd3Ga5O12 substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin Hall magnetoresistance in Pt/Y$_{3}$Fe$_{5}$O$_{12}$ bilayers grown on Si and Gd$_{3}$Ga$_{5}$O$_{12}$ substrates|Kenta Fukushima,Kohei Ueda,Naoki Moriuchi,Takanori Kida,Masayuki Hagiwara,Jobu Matsuno###
(1286535, 1286535)
 We study spin Hall magnetoresistance (SMR) in Pt/ferrimagnetic insulatorY3Fe5O12 (YIG) bilayers by focusing on crystallinity,magnetization, and interface roughness by controlling post-annealingtemperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Spin Hall magnetoresistance in Pt/Y$_{3}$Fe$_{5}$O$_{12}$ bilayers grown on Si and Gd$_{3}$Ga$_{5}$O$_{12}$ substrates|Kenta Fukushima,Kohei Ueda,Naoki Moriuchi,Takanori Kida,Masayuki Hagiwara,Jobu Matsuno###
(1286542, 1286542)
 We study spin Hall magnetoresistance (SMR) in Pt/ferrimagnetic insulatorY3Fe5O12 (YIG) bilayers by focusing on crystallinity,magnetization, and interface roughness by controlling post-annealingtemperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Y3Fe5O12
###Spin Hall magnetoresistance in Pt/Y$_{3}$Fe$_{5}$O$_{12}$ bilayers grown on Si and Gd$_{3}$Ga$_{5}$O$_{12}$ substrates|Kenta Fukushima,Kohei Ueda,Naoki Moriuchi,Takanori Kida,Masayuki Hagiwara,Jobu Matsuno###
(1286549, 1286554)
 We study spin Hall magnetoresistance (SMR) in Pt/ferrimagnetic insulatorY3Fe5O12 (YIG) bilayers by focusing on crystallinity,magnetization, and interface roughness by controlling post-annealingtemperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YI
###Spin Hall magnetoresistance in Pt/Y$_{3}$Fe$_{5}$O$_{12}$ bilayers grown on Si and Gd$_{3}$Ga$_{5}$O$_{12}$ substrates|Kenta Fukushima,Kohei Ueda,Naoki Moriuchi,Takanori Kida,Masayuki Hagiwara,Jobu Matsuno###
(1286557, 1286558)
 We study spin Hall magnetoresistance (SMR) in Pt/ferrimagnetic insulatorY3Fe5O12 (YIG) bilayers by focusing on crystallinity,magnetization, and interface roughness by controlling post-annealingtemperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin Hall magnetoresistance in Pt/Y$_{3}$Fe$_{5}$O$_{12}$ bilayers grown on Si and Gd$_{3}$Ga$_{5}$O$_{12}$ substrates|Kenta Fukushima,Kohei Ueda,Naoki Moriuchi,Takanori Kida,Masayuki Hagiwara,Jobu Matsuno###
(1286597, 1286597)
 The SMR in the Pt/YIG<missing VAR> grown on Si substrate is comparable to thatgrown on widely used Gd3Ga5O12 substrate, indicating that thelarge SMR can be achieved irrespective to the crystallinity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt/YI
###Spin Hall magnetoresistance in Pt/Y$_{3}$Fe$_{5}$O$_{12}$ bilayers grown on Si and Gd$_{3}$Ga$_{5}$O$_{12}$ substrates|Kenta Fukushima,Kohei Ueda,Naoki Moriuchi,Takanori Kida,Masayuki Hagiwara,Jobu Matsuno###
(1286605, 1286608)
 The SMR in the Pt/YIG<missing VAR> grown on Si substrate is comparable to thatgrown on widely used Gd3Ga5O12 substrate, indicating that thelarge SMR can be achieved irrespective to the crystallinity.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Si
###Spin Hall magnetoresistance in Pt/Y$_{3}$Fe$_{5}$O$_{12}$ bilayers grown on Si and Gd$_{3}$Ga$_{5}$O$_{12}$ substrates|Kenta Fukushima,Kohei Ueda,Naoki Moriuchi,Takanori Kida,Masayuki Hagiwara,Jobu Matsuno###
(1286615, 1286615)
 The SMR in the Pt/YIG<missing VAR> grown on Si substrate is comparable to thatgrown on widely used Gd3Ga5O12 substrate, indicating that thelarge SMR can be achieved irrespective to the crystallinity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Gd3Ga5O12
###Spin Hall magnetoresistance in Pt/Y$_{3}$Fe$_{5}$O$_{12}$ bilayers grown on Si and Gd$_{3}$Ga$_{5}$O$_{12}$ substrates|Kenta Fukushima,Kohei Ueda,Naoki Moriuchi,Takanori Kida,Masayuki Hagiwara,Jobu Matsuno###
(1286636, 1286641)
 The SMR in the Pt/YIG<missing VAR> grown on Si substrate is comparable to thatgrown on widely used Gd3Ga5O12 substrate, indicating that thelarge SMR can be achieved irrespective to the crystallinity.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin Hall magnetoresistance in Pt/Y$_{3}$Fe$_{5}$O$_{12}$ bilayers grown on Si and Gd$_{3}$Ga$_{5}$O$_{12}$ substrates|Kenta Fukushima,Kohei Ueda,Naoki Moriuchi,Takanori Kida,Masayuki Hagiwara,Jobu Matsuno###
(1286655, 1286655)
 The SMR in the Pt/YIG<missing VAR> grown on Si substrate is comparable to thatgrown on widely used Gd3Ga5O12 substrate, indicating that thelarge SMR can be achieved irrespective to the crystallinity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Spin Hall magnetoresistance in Pt/Y$_{3}$Fe$_{5}$O$_{12}$ bilayers grown on Si and Gd$_{3}$Ga$_{5}$O$_{12}$ substrates|Kenta Fukushima,Kohei Ueda,Naoki Moriuchi,Takanori Kida,Masayuki Hagiwara,Jobu Matsuno###
(1286691, 1286691)
 We deduced thespin mixing conductance from the Pt thickness dependence of the SMR to find thehigh interface quality of the optimized Pt/YIG<missing VAR> grown on Si in terms of spincurrent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin Hall magnetoresistance in Pt/Y$_{3}$Fe$_{5}$O$_{12}$ bilayers grown on Si and Gd$_{3}$Ga$_{5}$O$_{12}$ substrates|Kenta Fukushima,Kohei Ueda,Naoki Moriuchi,Takanori Kida,Masayuki Hagiwara,Jobu Matsuno###
(1286701, 1286701)
 We deduced thespin mixing conductance from the Pt thickness dependence of the SMR to find thehigh interface quality of the optimized Pt/YIG<missing VAR> grown on Si in terms of spincurrent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt/YI
###Spin Hall magnetoresistance in Pt/Y$_{3}$Fe$_{5}$O$_{12}$ bilayers grown on Si and Gd$_{3}$Ga$_{5}$O$_{12}$ substrates|Kenta Fukushima,Kohei Ueda,Naoki Moriuchi,Takanori Kida,Masayuki Hagiwara,Jobu Matsuno###
(1286724, 1286727)
 We deduced thespin mixing conductance from the Pt thickness dependence of the SMR to find thehigh interface quality of the optimized Pt/YIG<missing VAR> grown on Si in terms of spincurrent.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Si
###Spin Hall magnetoresistance in Pt/Y$_{3}$Fe$_{5}$O$_{12}$ bilayers grown on Si and Gd$_{3}$Ga$_{5}$O$_{12}$ substrates|Kenta Fukushima,Kohei Ueda,Naoki Moriuchi,Takanori Kida,Masayuki Hagiwara,Jobu Matsuno###
(1286734, 1286734)
 We deduced thespin mixing conductance from the Pt thickness dependence of the SMR to find thehigh interface quality of the optimized Pt/YIG<missing VAR> grown on Si in terms of spincurrent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin Hall magnetoresistance in Pt/Y$_{3}$Fe$_{5}$O$_{12}$ bilayers grown on Si and Gd$_{3}$Ga$_{5}$O$_{12}$ substrates|Kenta Fukushima,Kohei Ueda,Naoki Moriuchi,Takanori Kida,Masayuki Hagiwara,Jobu Matsuno###
(1286758, 1286758)
 We also clarified that the SMR correlates well with the magnetization,the interface roughness, and carrier density.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YI
###Spin Hall magnetoresistance in Pt/Y$_{3}$Fe$_{5}$O$_{12}$ bilayers grown on Si and Gd$_{3}$Ga$_{5}$O$_{12}$ substrates|Kenta Fukushima,Kohei Ueda,Naoki Moriuchi,Takanori Kida,Masayuki Hagiwara,Jobu Matsuno###
(1286799, 1286800)
 These findings highlight thatoptimizing YIG<missing VAR> properties is a key to control of magnetization by spin current,leading to the development of low power consumption spintronic device based onthe magnetic insulator.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Extraordinary Tunneling Magnetoresistance in Antiferromagnetic Tunnel Junctions with Antiperovskite Electrodes|Gautam Gurung,Ding-Fu Shao,Evgeny Y. Tsymbal###
(1286925, 1286925)
 Recent theoretical predictions and experimental demonstrations of a largetunneling magnetoresistance (TMR) effect in antiferromagnetic (AFM) tunneljunctions (AFMTJs) offer a new paradigm for information technologies where theAFM<missing VAR> Neel vector serves as a state variable.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[315.0, 4, '%', 6]

F
###Extraordinary Tunneling Magnetoresistance in Antiferromagnetic Tunnel Junctions with Antiperovskite Electrodes|Gautam Gurung,Ding-Fu Shao,Evgeny Y. Tsymbal###
(1286936, 1286936)
 Recent theoretical predictions and experimental demonstrations of a largetunneling magnetoresistance (TMR) effect in antiferromagnetic (AFM) tunneljunctions (AFMTJs) offer a new paradigm for information technologies where theAFM<missing VAR> Neel vector serves as a state variable.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[304.0, 4, '%', 6]

F
###Extraordinary Tunneling Magnetoresistance in Antiferromagnetic Tunnel Junctions with Antiperovskite Electrodes|Gautam Gurung,Ding-Fu Shao,Evgeny Y. Tsymbal###
(1286962, 1286962)
 Recent theoretical predictions and experimental demonstrations of a largetunneling magnetoresistance (TMR) effect in antiferromagnetic (AFM) tunneljunctions (AFMTJs) offer a new paradigm for information technologies where theAFM<missing VAR> Neel vector serves as a state variable.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[278.0, 4, '%', 6]

N
###Extraordinary Tunneling Magnetoresistance in Antiferromagnetic Tunnel Junctions with Antiperovskite Electrodes|Gautam Gurung,Ding-Fu Shao,Evgeny Y. Tsymbal###
(1286965, 1286965)
 Recent theoretical predictions and experimental demonstrations of a largetunneling magnetoresistance (TMR) effect in antiferromagnetic (AFM) tunneljunctions (AFMTJs) offer a new paradigm for information technologies where theAFM<missing VAR> Neel vector serves as a state variable.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[275.0, 4, '%', 6]

F
###Extraordinary Tunneling Magnetoresistance in Antiferromagnetic Tunnel Junctions with Antiperovskite Electrodes|Gautam Gurung,Ding-Fu Shao,Evgeny Y. Tsymbal###
(1287035, 1287035)
 Here, we predict the emergence of an extraordinary TMR (ETMR)effect in AFMTJs utilizing noncollinear AFM<missing VAR> antiperovskite X<missing VAR>NMn3 (X<missing VAR>  Ga,Sn,.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, 4, '%', 4]

F
###Extraordinary Tunneling Magnetoresistance in Antiferromagnetic Tunnel Junctions with Antiperovskite Electrodes|Gautam Gurung,Ding-Fu Shao,Evgeny Y. Tsymbal###
(1287045, 1287045)
 Here, we predict the emergence of an extraordinary TMR (ETMR)effect in AFMTJs utilizing noncollinear AFM<missing VAR> antiperovskite X<missing VAR>NMn3 (X<missing VAR>  Ga,Sn,.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[195.0, 4, '%', 4]

NMn3
###Extraordinary Tunneling Magnetoresistance in Antiferromagnetic Tunnel Junctions with Antiperovskite Electrodes|Gautam Gurung,Ding-Fu Shao,Evgeny Y. Tsymbal###
(1287051, 1287053)
 Here, we predict the emergence of an extraordinary TMR (ETMR)effect in AFMTJs utilizing noncollinear AFM<missing VAR> antiperovskite X<missing VAR>NMn3 (X<missing VAR>  Ga,Sn,.
Featurization terminated normally.
0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[187.0, 4, '%', 4]

Ga
###Extraordinary Tunneling Magnetoresistance in Antiferromagnetic Tunnel Junctions with Antiperovskite Electrodes|Gautam Gurung,Ding-Fu Shao,Evgeny Y. Tsymbal###
(1287059, 1287059)
 Here, we predict the emergence of an extraordinary TMR (ETMR)effect in AFMTJs utilizing noncollinear AFM<missing VAR> antiperovskite X<missing VAR>NMn3 (X<missing VAR>  Ga,Sn,.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 4, '%', 4]

Sn
###Extraordinary Tunneling Magnetoresistance in Antiferromagnetic Tunnel Junctions with Antiperovskite Electrodes|Gautam Gurung,Ding-Fu Shao,Evgeny Y. Tsymbal###
(1287063, 1287063)
 Here, we predict the emergence of an extraordinary TMR (ETMR)effect in AFMTJs utilizing noncollinear AFM<missing VAR> antiperovskite X<missing VAR>NMn3 (X<missing VAR>  Ga,Sn,.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[177.0, 4, '%', 4]

TiO3
###Extraordinary Tunneling Magnetoresistance in Antiferromagnetic Tunnel Junctions with Antiperovskite Electrodes|Gautam Gurung,Ding-Fu Shao,Evgeny Y. Tsymbal###
(1287081, 1287083)
 electrodes and a perovskite oxide ATiO3 (A  Sr, Ba,.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 4, '%', 3]

Sr
###Extraordinary Tunneling Magnetoresistance in Antiferromagnetic Tunnel Junctions with Antiperovskite Electrodes|Gautam Gurung,Ding-Fu Shao,Evgeny Y. Tsymbal###
(1287089, 1287089)
 electrodes and a perovskite oxide ATiO3 (A  Sr, Ba,.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 4, '%', 3]

Ba
###Extraordinary Tunneling Magnetoresistance in Antiferromagnetic Tunnel Junctions with Antiperovskite Electrodes|Gautam Gurung,Ding-Fu Shao,Evgeny Y. Tsymbal###
(1287092, 1287092)
 electrodes and a perovskite oxide ATiO3 (A  Sr, Ba,.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 4, '%', 3]

F
###Extraordinary Tunneling Magnetoresistance in Antiferromagnetic Tunnel Junctions with Antiperovskite Electrodes|Gautam Gurung,Ding-Fu Shao,Evgeny Y. Tsymbal###
(1287136, 1287136)
 The ETMR effect stems from the perfectly spin-polarized electronicstates in the AFM<missing VAR> antiperovskites that can efficiently tunnel through thelow-decay-rate evanescent states of the perovskite oxide while preserving theirspin state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 4, '%', 1]

GaNMn3/SrTiO3/GaNMn3
###Extraordinary Tunneling Magnetoresistance in Antiferromagnetic Tunnel Junctions with Antiperovskite Electrodes|Gautam Gurung,Ding-Fu Shao,Evgeny Y. Tsymbal###
(1287188, 1287201)
 Using an GaNMn3/SrTiO3/GaNMn3 (001) AFMTJ as arepresentative example, we demonstrate a giant TMR ratio exceeding 104%and originating from the ETMR effect.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[39.0, 4, '%', 0]

F
###Extraordinary Tunneling Magnetoresistance in Antiferromagnetic Tunnel Junctions with Antiperovskite Electrodes|Gautam Gurung,Ding-Fu Shao,Evgeny Y. Tsymbal###
(1287208, 1287208)
 Using an GaNMn3/SrTiO3/GaNMn3 (001) AFMTJ as arepresentative example, we demonstrate a giant TMR ratio exceeding 104%and originating from the ETMR effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 4, '%', 0]

N
###Extraordinary Tunneling Magnetoresistance in Antiferromagnetic Tunnel Junctions with Antiperovskite Electrodes|Gautam Gurung,Ding-Fu Shao,Evgeny Y. Tsymbal###
(1287285, 1287285)
 These results are promising for theefficient detection and control of the Neel vector in AFM<missing VAR> spintronics.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 4, '%', 1]

F
###Extraordinary Tunneling Magnetoresistance in Antiferromagnetic Tunnel Junctions with Antiperovskite Electrodes|Gautam Gurung,Ding-Fu Shao,Evgeny Y. Tsymbal###
(1287293, 1287293)
 These results are promising for theefficient detection and control of the Neel vector in AFM<missing VAR> spintronics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 4, '%', 1]

Fe2O3
###Insight into the structural and magnetotransport properties of epitaxial heterostructures $α$-Fe$_2$O$_3$-Pt(111): Role of the reversed layer sequence|A. Kozioł-Rachwał,N. Kwiatek,W. Skowroński,K. Grochot,J. Kanak,E. Madej,K. Freindl,J. Korecki,N. Spiridis###
(1287328, 1287331)
Insight into the structural and magnetotransport properties of epitaxial heterostructures -Fe2O3-Pt(111) Role of the reversed layer sequence.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 6, 'nm', 1],[82.0, 15, 'nm', 1],[260.0, 6, 'nm', 4],[263.0, 15, 'nm', 4]

S
###Insight into the structural and magnetotransport properties of epitaxial heterostructures $α$-Fe$_2$O$_3$-Pt(111): Role of the reversed layer sequence|A. Kozioł-Rachwał,N. Kwiatek,W. Skowroński,K. Grochot,J. Kanak,E. Madej,K. Freindl,J. Korecki,N. Spiridis###
(1287372, 1287372)
 We report on the chemical structure and spin Hall magnetoresistance (SMR) inepitaxial alpha-Fe2O3(hematite)(0001)/Pt(111) bilayers with hematitethicknesses of 6 nm and 15 nm grown by molecular beam epitaxy on a MgO(111)substrate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 6, 'nm', 0],[41.0, 15, 'nm', 0],[219.0, 6, 'nm', 3],[222.0, 15, 'nm', 3]

O3
###Insight into the structural and magnetotransport properties of epitaxial heterostructures $α$-Fe$_2$O$_3$-Pt(111): Role of the reversed layer sequence|A. Kozioł-Rachwał,N. Kwiatek,W. Skowroński,K. Grochot,J. Kanak,E. Madej,K. Freindl,J. Korecki,N. Spiridis###
(1287386, 1287387)
 We report on the chemical structure and spin Hall magnetoresistance (SMR) inepitaxial alpha-Fe2O3(hematite)(0001)/Pt(111) bilayers with hematitethicknesses of 6 nm and 15 nm grown by molecular beam epitaxy on a MgO(111)substrate.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 6, 'nm', 0],[26.0, 15, 'nm', 0],[204.0, 6, 'nm', 3],[207.0, 15, 'nm', 3]

Pt
###Insight into the structural and magnetotransport properties of epitaxial heterostructures $α$-Fe$_2$O$_3$-Pt(111): Role of the reversed layer sequence|A. Kozioł-Rachwał,N. Kwiatek,W. Skowroński,K. Grochot,J. Kanak,E. Madej,K. Freindl,J. Korecki,N. Spiridis###
(1287449, 1287449)
 Unlike previous studies that involved Pt overlayers on hematite, thepresent hematite films were grown on a stable Pt buffer layer and displayedstructural changes as a function of thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 6, 'nm', 1],[36.0, 15, 'nm', 1],[142.0, 6, 'nm', 2],[145.0, 15, 'nm', 2]

Pt
###Insight into the structural and magnetotransport properties of epitaxial heterostructures $α$-Fe$_2$O$_3$-Pt(111): Role of the reversed layer sequence|A. Kozioł-Rachwał,N. Kwiatek,W. Skowroński,K. Grochot,J. Kanak,E. Madej,K. Freindl,J. Korecki,N. Spiridis###
(1287477, 1287477)
 Unlike previous studies that involved Pt overlayers on hematite, thepresent hematite films were grown on a stable Pt buffer layer and displayedstructural changes as a function of thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 6, 'nm', 1],[64.0, 15, 'nm', 1],[114.0, 6, 'nm', 2],[117.0, 15, 'nm', 2]

S
###Insight into the structural and magnetotransport properties of epitaxial heterostructures $α$-Fe$_2$O$_3$-Pt(111): Role of the reversed layer sequence|A. Kozioł-Rachwał,N. Kwiatek,W. Skowroński,K. Grochot,J. Kanak,E. Madej,K. Freindl,J. Korecki,N. Spiridis###
(1287565, 1287565)
 We observed a signchange of the SMR from positive to negative when the thickness of hematiteincreased from 6 nm to 15 nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 6, 'nm', 3],[152.0, 15, 'nm', 3],[26.0, 6, 'nm', 0],[29.0, 15, 'nm', 0]

O3
###Insight into the structural and magnetotransport properties of epitaxial heterostructures $α$-Fe$_2$O$_3$-Pt(111): Role of the reversed layer sequence|A. Kozioł-Rachwał,N. Kwiatek,W. Skowroński,K. Grochot,J. Kanak,E. Madej,K. Freindl,J. Korecki,N. Spiridis###
(1287603, 1287604)
 For alpha-Fe2O3(15 nm)/Pt, wedemonstrated room-temperature switching of the Neel order with rectangular,nondecaying switching characteristics.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[193.0, 6, 'nm', 4],[190.0, 15, 'nm', 4],[12.0, 6, 'nm', 1],[9.0, 15, 'nm', 1]

Pt
###Insight into the structural and magnetotransport properties of epitaxial heterostructures $α$-Fe$_2$O$_3$-Pt(111): Role of the reversed layer sequence|A. Kozioł-Rachwał,N. Kwiatek,W. Skowroński,K. Grochot,J. Kanak,E. Madej,K. Freindl,J. Korecki,N. Spiridis###
(1287611, 1287611)
 For alpha-Fe2O3(15 nm)/Pt, wedemonstrated room-temperature switching of the Neel order with rectangular,nondecaying switching characteristics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[201.0, 6, 'nm', 4],[198.0, 15, 'nm', 4],[20.0, 6, 'nm', 1],[17.0, 15, 'nm', 1]

N
###Insight into the structural and magnetotransport properties of epitaxial heterostructures $α$-Fe$_2$O$_3$-Pt(111): Role of the reversed layer sequence|A. Kozioł-Rachwał,N. Kwiatek,W. Skowroński,K. Grochot,J. Kanak,E. Madej,K. Freindl,J. Korecki,N. Spiridis###
(1287629, 1287629)
 For alpha-Fe2O3(15 nm)/Pt, wedemonstrated room-temperature switching of the Neel order with rectangular,nondecaying switching characteristics.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[219.0, 6, 'nm', 4],[216.0, 15, 'nm', 4],[38.0, 6, 'nm', 1],[35.0, 15, 'nm', 1]

Pt
###Insight into the structural and magnetotransport properties of epitaxial heterostructures $α$-Fe$_2$O$_3$-Pt(111): Role of the reversed layer sequence|A. Kozioł-Rachwał,N. Kwiatek,W. Skowroński,K. Grochot,J. Kanak,E. Madej,K. Freindl,J. Korecki,N. Spiridis###
(1287685, 1287685)
 Such structures open the way toextending magnetotransport studies to more complex systems with doubleasymmetric metal/hematite/Pt interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[275.0, 6, 'nm', 5],[272.0, 15, 'nm', 5],[94.0, 6, 'nm', 2],[91.0, 15, 'nm', 2]

F
###Coexistence or Separation of the Superconducting, Antiferromagnetic, and Paramagnetic Phases in Quasi One-Dimensional (TMTSF)2PF6 ?|A. V. Kornilov,V. M. Pudalov,Y. Kitaoka,K. Ishida,G. -q. Zheng,T. Mito,J. S. Qualls###
(1287733, 1287733)
Coexistence or Separation of the Superconducting, Antiferromagnetic, and Paramagnetic Phases in Quasi One-Dimensional (TMTSF)2PF6 ?
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PF6
###Coexistence or Separation of the Superconducting, Antiferromagnetic, and Paramagnetic Phases in Quasi One-Dimensional (TMTSF)2PF6 ?|A. V. Kornilov,V. M. Pudalov,Y. Kitaoka,K. Ishida,G. -q. Zheng,T. Mito,J. S. Qualls###
(1287736, 1287738)
Coexistence or Separation of the Superconducting, Antiferromagnetic, and Paramagnetic Phases in Quasi One-Dimensional (TMTSF)2PF6 ?
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.8571428571428571,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Coexistence or Separation of the Superconducting, Antiferromagnetic, and Paramagnetic Phases in Quasi One-Dimensional (TMTSF)2PF6 ?|A. V. Kornilov,V. M. Pudalov,Y. Kitaoka,K. Ishida,G. -q. Zheng,T. Mito,J. S. Qualls###
(1287784, 1287784)
 We report on experimental studies of the character of phase transitions inthe quasi-1D<missing VAR> organic compound (TMTSF)2PF6 in the close vicinity of the bordersbetween the paramagnetic metal PM<missing VAR>, antiferromagnetic insulator AF, andsuperconducting SC states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PF6
###Coexistence or Separation of the Superconducting, Antiferromagnetic, and Paramagnetic Phases in Quasi One-Dimensional (TMTSF)2PF6 ?|A. V. Kornilov,V. M. Pudalov,Y. Kitaoka,K. Ishida,G. -q. Zheng,T. Mito,J. S. Qualls###
(1287787, 1287789)
 We report on experimental studies of the character of phase transitions inthe quasi-1D<missing VAR> organic compound (TMTSF)2PF6 in the close vicinity of the bordersbetween the paramagnetic metal PM<missing VAR>, antiferromagnetic insulator AF, andsuperconducting SC states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.8571428571428571,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Coexistence or Separation of the Superconducting, Antiferromagnetic, and Paramagnetic Phases in Quasi One-Dimensional (TMTSF)2PF6 ?|A. V. Kornilov,V. M. Pudalov,Y. Kitaoka,K. Ishida,G. -q. Zheng,T. Mito,J. S. Qualls###
(1287814, 1287814)
 We report on experimental studies of the character of phase transitions inthe quasi-1D<missing VAR> organic compound (TMTSF)2PF6 in the close vicinity of the bordersbetween the paramagnetic metal PM<missing VAR>, antiferromagnetic insulator AF, andsuperconducting SC states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Coexistence or Separation of the Superconducting, Antiferromagnetic, and Paramagnetic Phases in Quasi One-Dimensional (TMTSF)2PF6 ?|A. V. Kornilov,V. M. Pudalov,Y. Kitaoka,K. Ishida,G. -q. Zheng,T. Mito,J. S. Qualls###
(1287823, 1287823)
 We report on experimental studies of the character of phase transitions inthe quasi-1D<missing VAR> organic compound (TMTSF)2PF6 in the close vicinity of the bordersbetween the paramagnetic metal PM<missing VAR>, antiferromagnetic insulator AF, andsuperconducting SC states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SC
###Coexistence or Separation of the Superconducting, Antiferromagnetic, and Paramagnetic Phases in Quasi One-Dimensional (TMTSF)2PF6 ?|A. V. Kornilov,V. M. Pudalov,Y. Kitaoka,K. Ishida,G. -q. Zheng,T. Mito,J. S. Qualls###
(1287831, 1287832)
 We report on experimental studies of the character of phase transitions inthe quasi-1D<missing VAR> organic compound (TMTSF)2PF6 in the close vicinity of the bordersbetween the paramagnetic metal PM<missing VAR>, antiferromagnetic insulator AF, andsuperconducting SC states.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Coexistence or Separation of the Superconducting, Antiferromagnetic, and Paramagnetic Phases in Quasi One-Dimensional (TMTSF)2PF6 ?|A. V. Kornilov,V. M. Pudalov,Y. Kitaoka,K. Ishida,G. -q. Zheng,T. Mito,J. S. Qualls###
(1287837, 1287837)
 In order to drive the system through the phaseborder P0(T<missing VAR>0), the sample was maintained at fixed temperature T<missing VAR> and pressureP, whereas the critical pressure P0 was tuned by applying the magnetic fieldB.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P0
###Coexistence or Separation of the Superconducting, Antiferromagnetic, and Paramagnetic Phases in Quasi One-Dimensional (TMTSF)2PF6 ?|A. V. Kornilov,V. M. Pudalov,Y. Kitaoka,K. Ishida,G. -q. Zheng,T. Mito,J. S. Qualls###
(1287858, 1287859)
 In order to drive the system through the phaseborder P0(T<missing VAR>0), the sample was maintained at fixed temperature T<missing VAR> and pressureP, whereas the critical pressure P0 was tuned by applying the magnetic fieldB.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Coexistence or Separation of the Superconducting, Antiferromagnetic, and Paramagnetic Phases in Quasi One-Dimensional (TMTSF)2PF6 ?|A. V. Kornilov,V. M. Pudalov,Y. Kitaoka,K. Ishida,G. -q. Zheng,T. Mito,J. S. Qualls###
(1287887, 1287887)
 In order to drive the system through the phaseborder P0(T<missing VAR>0), the sample was maintained at fixed temperature T<missing VAR> and pressureP, whereas the critical pressure P0 was tuned by applying the magnetic fieldB.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P0
###Coexistence or Separation of the Superconducting, Antiferromagnetic, and Paramagnetic Phases in Quasi One-Dimensional (TMTSF)2PF6 ?|A. V. Kornilov,V. M. Pudalov,Y. Kitaoka,K. Ishida,G. -q. Zheng,T. Mito,J. S. Qualls###
(1287898, 1287899)
 In order to drive the system through the phaseborder P0(T<missing VAR>0), the sample was maintained at fixed temperature T<missing VAR> and pressureP, whereas the critical pressure P0 was tuned by applying the magnetic fieldB.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Coexistence or Separation of the Superconducting, Antiferromagnetic, and Paramagnetic Phases in Quasi One-Dimensional (TMTSF)2PF6 ?|A. V. Kornilov,V. M. Pudalov,Y. Kitaoka,K. Ishida,G. -q. Zheng,T. Mito,J. S. Qualls###
(1287916, 1287916)
 In order to drive the system through the phaseborder P0(T<missing VAR>0), the sample was maintained at fixed temperature T<missing VAR> and pressureP, whereas the critical pressure P0 was tuned by applying the magnetic fieldB.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Coexistence or Separation of the Superconducting, Antiferromagnetic, and Paramagnetic Phases in Quasi One-Dimensional (TMTSF)2PF6 ?|A. V. Kornilov,V. M. Pudalov,Y. Kitaoka,K. Ishida,G. -q. Zheng,T. Mito,J. S. Qualls###
(1287919, 1287919)
 In this approach, the magnetic field was used (i) for tuning (P-P0), and(ii) for identifying the phase composition (due to qualitatively differentmagnetoresistance behavior in different phases).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Coexistence or Separation of the Superconducting, Antiferromagnetic, and Paramagnetic Phases in Quasi One-Dimensional (TMTSF)2PF6 ?|A. V. Kornilov,V. M. Pudalov,Y. Kitaoka,K. Ishida,G. -q. Zheng,T. Mito,J. S. Qualls###
(1287945, 1287945)
 In this approach, the magnetic field was used (i) for tuning (P-P0), and(ii) for identifying the phase composition (due to qualitatively differentmagnetoresistance behavior in different phases).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P0
###Coexistence or Separation of the Superconducting, Antiferromagnetic, and Paramagnetic Phases in Quasi One-Dimensional (TMTSF)2PF6 ?|A. V. Kornilov,V. M. Pudalov,Y. Kitaoka,K. Ishida,G. -q. Zheng,T. Mito,J. S. Qualls###
(1287947, 1287948)
 In this approach, the magnetic field was used (i) for tuning (P-P0), and(ii) for identifying the phase composition (due to qualitatively differentmagnetoresistance behavior in different phases).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(B)
###Coexistence or Separation of the Superconducting, Antiferromagnetic, and Paramagnetic Phases in Quasi One-Dimensional (TMTSF)2PF6 ?|A. V. Kornilov,V. M. Pudalov,Y. Kitaoka,K. Ishida,G. -q. Zheng,T. Mito,J. S. Qualls###
(1288000, 1288002)
 Experimentally, we measuredR<missing VAR>(B) and its temperature dependence R<missing VAR>(B,T) in the pressure range (0 - 1)G<missing VAR>Pa.
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Coexistence or Separation of the Superconducting, Antiferromagnetic, and Paramagnetic Phases in Quasi One-Dimensional (TMTSF)2PF6 ?|A. V. Kornilov,V. M. Pudalov,Y. Kitaoka,K. Ishida,G. -q. Zheng,T. Mito,J. S. Qualls###
(1288014, 1288014)
 Experimentally, we measuredR<missing VAR>(B) and its temperature dependence R<missing VAR>(B,T) in the pressure range (0 - 1)G<missing VAR>Pa.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pa
###Coexistence or Separation of the Superconducting, Antiferromagnetic, and Paramagnetic Phases in Quasi One-Dimensional (TMTSF)2PF6 ?|A. V. Kornilov,V. M. Pudalov,Y. Kitaoka,K. Ishida,G. -q. Zheng,T. Mito,J. S. Qualls###
(1288035, 1288035)
 Experimentally, we measuredR<missing VAR>(B) and its temperature dependence R<missing VAR>(B,T) in the pressure range (0 - 1)G<missing VAR>Pa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Coexistence or Separation of the Superconducting, Antiferromagnetic, and Paramagnetic Phases in Quasi One-Dimensional (TMTSF)2PF6 ?|A. V. Kornilov,V. M. Pudalov,Y. Kitaoka,K. Ishida,G. -q. Zheng,T. Mito,J. S. Qualls###
(1288070, 1288070)
Our studies focus on the features of the magnetoresistance at the phasetransition between the PM<missing VAR> and AF phases, in the close vicinity to thesuperconducting transition at T<missing VAR>1K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Coexistence or Separation of the Superconducting, Antiferromagnetic, and Paramagnetic Phases in Quasi One-Dimensional (TMTSF)2PF6 ?|A. V. Kornilov,V. M. Pudalov,Y. Kitaoka,K. Ishida,G. -q. Zheng,T. Mito,J. S. Qualls###
(1288076, 1288076)
Our studies focus on the features of the magnetoresistance at the phasetransition between the PM<missing VAR> and AF phases, in the close vicinity to thesuperconducting transition at T<missing VAR>1K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Coexistence or Separation of the Superconducting, Antiferromagnetic, and Paramagnetic Phases in Quasi One-Dimensional (TMTSF)2PF6 ?|A. V. Kornilov,V. M. Pudalov,Y. Kitaoka,K. Ishida,G. -q. Zheng,T. Mito,J. S. Qualls###
(1288102, 1288102)
Our studies focus on the features of the magnetoresistance at the phasetransition between the PM<missing VAR> and AF phases, in the close vicinity to thesuperconducting transition at T<missing VAR>1K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F/P
###Coexistence or Separation of the Superconducting, Antiferromagnetic, and Paramagnetic Phases in Quasi One-Dimensional (TMTSF)2PF6 ?|A. V. Kornilov,V. M. Pudalov,Y. Kitaoka,K. Ishida,G. -q. Zheng,T. Mito,J. S. Qualls###
(1288123, 1288125)
 We found pronounced history effects arisingwhen the AF/PM<missing VAR> phase border is crossed by sweeping the magnetic field theresistance depends on a trajectory which the system arrives at a given point ofthe P-B-T<missing VAR> phase space.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

P
###Coexistence or Separation of the Superconducting, Antiferromagnetic, and Paramagnetic Phases in Quasi One-Dimensional (TMTSF)2PF6 ?|A. V. Kornilov,V. M. Pudalov,Y. Kitaoka,K. Ishida,G. -q. Zheng,T. Mito,J. S. Qualls###
(1288180, 1288180)
 We found pronounced history effects arisingwhen the AF/PM<missing VAR> phase border is crossed by sweeping the magnetic field theresistance depends on a trajectory which the system arrives at a given point ofthe P-B-T<missing VAR> phase space.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Coexistence or Separation of the Superconducting, Antiferromagnetic, and Paramagnetic Phases in Quasi One-Dimensional (TMTSF)2PF6 ?|A. V. Kornilov,V. M. Pudalov,Y. Kitaoka,K. Ishida,G. -q. Zheng,T. Mito,J. S. Qualls###
(1288182, 1288182)
 We found pronounced history effects arisingwhen the AF/PM<missing VAR> phase border is crossed by sweeping the magnetic field theresistance depends on a trajectory which the system arrives at a given point ofthe P-B-T<missing VAR> phase space.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Coexistence or Separation of the Superconducting, Antiferromagnetic, and Paramagnetic Phases in Quasi One-Dimensional (TMTSF)2PF6 ?|A. V. Kornilov,V. M. Pudalov,Y. Kitaoka,K. Ishida,G. -q. Zheng,T. Mito,J. S. Qualls###
(1288191, 1288191)
 In the transition from the PM<missing VAR> to AF phase, the featuresof the PM<missing VAR> phase extends well into the AF phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Coexistence or Separation of the Superconducting, Antiferromagnetic, and Paramagnetic Phases in Quasi One-Dimensional (TMTSF)2PF6 ?|A. V. Kornilov,V. M. Pudalov,Y. Kitaoka,K. Ishida,G. -q. Zheng,T. Mito,J. S. Qualls###
(1288201, 1288201)
 In the transition from the PM<missing VAR> to AF phase, the featuresof the PM<missing VAR> phase extends well into the AF phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Coexistence or Separation of the Superconducting, Antiferromagnetic, and Paramagnetic Phases in Quasi One-Dimensional (TMTSF)2PF6 ?|A. V. Kornilov,V. M. Pudalov,Y. Kitaoka,K. Ishida,G. -q. Zheng,T. Mito,J. S. Qualls###
(1288207, 1288207)
 In the transition from the PM<missing VAR> to AF phase, the featuresof the PM<missing VAR> phase extends well into the AF phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Coexistence or Separation of the Superconducting, Antiferromagnetic, and Paramagnetic Phases in Quasi One-Dimensional (TMTSF)2PF6 ?|A. V. Kornilov,V. M. Pudalov,Y. Kitaoka,K. Ishida,G. -q. Zheng,T. Mito,J. S. Qualls###
(1288221, 1288221)
 In the transition from the PM<missing VAR> to AF phase, the featuresof the PM<missing VAR> phase extends well into the AF phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Coexistence or Separation of the Superconducting, Antiferromagnetic, and Paramagnetic Phases in Quasi One-Dimensional (TMTSF)2PF6 ?|A. V. Kornilov,V. M. Pudalov,Y. Kitaoka,K. Ishida,G. -q. Zheng,T. Mito,J. S. Qualls###
(1288235, 1288235)
 In the transition from the PM<missing VAR> to AF phase, the featuresof the PM<missing VAR> phase extends well into the AF phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Coexistence or Separation of the Superconducting, Antiferromagnetic, and Paramagnetic Phases in Quasi One-Dimensional (TMTSF)2PF6 ?|A. V. Kornilov,V. M. Pudalov,Y. Kitaoka,K. Ishida,G. -q. Zheng,T. Mito,J. S. Qualls###
(1288240, 1288240)
 At the opposite transition fromthe AF to PM<missing VAR> phase, the features of the AF phase are observed in the PM<missing VAR> phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Coexistence or Separation of the Superconducting, Antiferromagnetic, and Paramagnetic Phases in Quasi One-Dimensional (TMTSF)2PF6 ?|A. V. Kornilov,V. M. Pudalov,Y. Kitaoka,K. Ishida,G. -q. Zheng,T. Mito,J. S. Qualls###
(1288254, 1288254)
 At the opposite transition fromthe AF to PM<missing VAR> phase, the features of the AF phase are observed in the PM<missing VAR> phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Coexistence or Separation of the Superconducting, Antiferromagnetic, and Paramagnetic Phases in Quasi One-Dimensional (TMTSF)2PF6 ?|A. V. Kornilov,V. M. Pudalov,Y. Kitaoka,K. Ishida,G. -q. Zheng,T. Mito,J. S. Qualls###
(1288258, 1288258)
 At the opposite transition fromthe AF to PM<missing VAR> phase, the features of the AF phase are observed in the PM<missing VAR> phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Coexistence or Separation of the Superconducting, Antiferromagnetic, and Paramagnetic Phases in Quasi One-Dimensional (TMTSF)2PF6 ?|A. V. Kornilov,V. M. Pudalov,Y. Kitaoka,K. Ishida,G. -q. Zheng,T. Mito,J. S. Qualls###
(1288273, 1288273)
 At the opposite transition fromthe AF to PM<missing VAR> phase, the features of the AF phase are observed in the PM<missing VAR> phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Coexistence or Separation of the Superconducting, Antiferromagnetic, and Paramagnetic Phases in Quasi One-Dimensional (TMTSF)2PF6 ?|A. V. Kornilov,V. M. Pudalov,Y. Kitaoka,K. Ishida,G. -q. Zheng,T. Mito,J. S. Qualls###
(1288285, 1288285)
 At the opposite transition fromthe AF to PM<missing VAR> phase, the features of the AF phase are observed in the PM<missing VAR> phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GdBaCo2O5
###Transport and magnetic properties of GdBaCo_{2}O_{5+x} single crystals: A cobalt oxide with square-lattice CoO_2 planes over a wide range of electron and hole doping|A. A. Taskin,A. N. Lavrov,Yoichi Ando###
(1288424, 1288429)
Transport and magnetic properties of GdBaCo2O5x<missing VAR> single crystals A cobalt oxide with square-lattice CoO2 planes over a wide range of electron and hole doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5555555555555556,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[267.0, 50, '%', 3],[357.0, 0.5, ',', 4]

CoO2
###Transport and magnetic properties of GdBaCo_{2}O_{5+x} single crystals: A cobalt oxide with square-lattice CoO_2 planes over a wide range of electron and hole doping|A. A. Taskin,A. N. Lavrov,Yoichi Ando###
(1288448, 1288450)
Transport and magnetic properties of GdBaCo2O5x<missing VAR> single crystals A cobalt oxide with square-lattice CoO2 planes over a wide range of electron and hole doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[246.0, 50, '%', 3],[336.0, 0.5, ',', 4]

GdBaCo2O5
###Transport and magnetic properties of GdBaCo_{2}O_{5+x} single crystals: A cobalt oxide with square-lattice CoO_2 planes over a wide range of electron and hole doping|A. A. Taskin,A. N. Lavrov,Yoichi Ando###
(1288485, 1288490)
 Single crystals of the layered perovskite GdBaCo2O5x<missing VAR> (G<missing VAR>BCO) have beengrown by the floating-zone method, and their transport, magnetic, andstructural properties have been studied in detail over a wide range of oxygencontents.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5555555555555556,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[206.0, 50, '%', 2],[296.0, 0.5, ',', 3]

O
###Transport and magnetic properties of GdBaCo_{2}O_{5+x} single crystals: A cobalt oxide with square-lattice CoO_2 planes over a wide range of electron and hole doping|A. A. Taskin,A. N. Lavrov,Yoichi Ando###
(1288497, 1288497)
 Single crystals of the layered perovskite GdBaCo2O5x<missing VAR> (G<missing VAR>BCO) have beengrown by the floating-zone method, and their transport, magnetic, andstructural properties have been studied in detail over a wide range of oxygencontents.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[199.0, 50, '%', 2],[289.0, 0.5, ',', 3]

GdBaCo2O5.5
###Transport and magnetic properties of GdBaCo_{2}O_{5+x} single crystals: A cobalt oxide with square-lattice CoO_2 planes over a wide range of electron and hole doping|A. A. Taskin,A. N. Lavrov,Yoichi Ando###
(1288594, 1288599)
 The obtained data are used to establish a rich phase diagram centeredat the parent compound GdBaCo2O5.5 -- an insulator with Co ions in the3 state.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5789473684210527,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.21052631578947367,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.10526315789473684,0,0,0,0,0,0,0,0.10526315789473684,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 50, '%', 1],[187.0, 0.5, ',', 2]

Co
###Transport and magnetic properties of GdBaCo_{2}O_{5+x} single crystals: A cobalt oxide with square-lattice CoO_2 planes over a wide range of electron and hole doping|A. A. Taskin,A. N. Lavrov,Yoichi Ando###
(1288610, 1288610)
 The obtained data are used to establish a rich phase diagram centeredat the parent compound GdBaCo2O5.5 -- an insulator with Co ions in the3 state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 50, '%', 1],[176.0, 0.5, ',', 2]

BCO
###Transport and magnetic properties of GdBaCo_{2}O_{5+x} single crystals: A cobalt oxide with square-lattice CoO_2 planes over a wide range of electron and hole doping|A. A. Taskin,A. N. Lavrov,Yoichi Ando###
(1288633, 1288635)
 An attractive feature of G<missing VAR>BCO is that it allows a precise andcontinuous doping of CoO2 planes with either electrons or holes, spanning awide range from the charge-ordered insulator at 50% electron doping (x<missing VAR>0) tothe undoped band insulator (x<missing VAR>0.5), and further towards the heavily hole-dopedmetallic state.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 50, '%', 0],[151.0, 0.5, ',', 1]

CoO2
###Transport and magnetic properties of GdBaCo_{2}O_{5+x} single crystals: A cobalt oxide with square-lattice CoO_2 planes over a wide range of electron and hole doping|A. A. Taskin,A. N. Lavrov,Yoichi Ando###
(1288658, 1288660)
 An attractive feature of G<missing VAR>BCO is that it allows a precise andcontinuous doping of CoO2 planes with either electrons or holes, spanning awide range from the charge-ordered insulator at 50% electron doping (x<missing VAR>0) tothe undoped band insulator (x<missing VAR>0.5), and further towards the heavily hole-dopedmetallic state.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 50, '%', 0],[126.0, 0.5, ',', 1]

At
###Transport and magnetic properties of GdBaCo_{2}O_{5+x} single crystals: A cobalt oxide with square-lattice CoO_2 planes over a wide range of electron and hole doping|A. A. Taskin,A. N. Lavrov,Yoichi Ando###
(1288812, 1288812)
 Atlow temperatures, the homogeneous distribution of doped carriers in G<missing VAR>BCObecomes unstable, and both the magnetic and transport properties point to anintriguing nanoscopic phase separation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 50, '%', 2],[26.0, 0.5, ',', 1]

BCO
###Transport and magnetic properties of GdBaCo_{2}O_{5+x} single crystals: A cobalt oxide with square-lattice CoO_2 planes over a wide range of electron and hole doping|A. A. Taskin,A. N. Lavrov,Yoichi Ando###
(1288835, 1288837)
 Atlow temperatures, the homogeneous distribution of doped carriers in G<missing VAR>BCObecomes unstable, and both the magnetic and transport properties point to anintriguing nanoscopic phase separation.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 50, '%', 2],[49.0, 0.5, ',', 1]

BCO
###Transport and magnetic properties of GdBaCo_{2}O_{5+x} single crystals: A cobalt oxide with square-lattice CoO_2 planes over a wide range of electron and hole doping|A. A. Taskin,A. N. Lavrov,Yoichi Ando###
(1288901, 1288903)
 We also find that throughout thecomposition range the magnetic behavior in G<missing VAR>BCO is governed by a delicatebalance between ferromagnetic (FM) and antiferromagnetic (AF) interactions,which can be easily affected by temperature, doping, or magnetic field,bringing about FM<missing VAR>-AF transitions and a giant magnetoresistance (MR) phenomenon.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, 50, '%', 3],[115.0, 0.5, ',', 2]

F
###Transport and magnetic properties of GdBaCo_{2}O_{5+x} single crystals: A cobalt oxide with square-lattice CoO_2 planes over a wide range of electron and hole doping|A. A. Taskin,A. N. Lavrov,Yoichi Ando###
(1288923, 1288923)
 We also find that throughout thecomposition range the magnetic behavior in G<missing VAR>BCO is governed by a delicatebalance between ferromagnetic (FM) and antiferromagnetic (AF) interactions,which can be easily affected by temperature, doping, or magnetic field,bringing about FM<missing VAR>-AF transitions and a giant magnetoresistance (MR) phenomenon.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[227.0, 50, '%', 3],[137.0, 0.5, ',', 2]

F
###Transport and magnetic properties of GdBaCo_{2}O_{5+x} single crystals: A cobalt oxide with square-lattice CoO_2 planes over a wide range of electron and hole doping|A. A. Taskin,A. N. Lavrov,Yoichi Ando###
(1288933, 1288933)
 We also find that throughout thecomposition range the magnetic behavior in G<missing VAR>BCO is governed by a delicatebalance between ferromagnetic (FM) and antiferromagnetic (AF) interactions,which can be easily affected by temperature, doping, or magnetic field,bringing about FM<missing VAR>-AF transitions and a giant magnetoresistance (MR) phenomenon.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[237.0, 50, '%', 3],[147.0, 0.5, ',', 2]

F
###Transport and magnetic properties of GdBaCo_{2}O_{5+x} single crystals: A cobalt oxide with square-lattice CoO_2 planes over a wide range of electron and hole doping|A. A. Taskin,A. N. Lavrov,Yoichi Ando###
(1288970, 1288970)
 We also find that throughout thecomposition range the magnetic behavior in G<missing VAR>BCO is governed by a delicatebalance between ferromagnetic (FM) and antiferromagnetic (AF) interactions,which can be easily affected by temperature, doping, or magnetic field,bringing about FM<missing VAR>-AF transitions and a giant magnetoresistance (MR) phenomenon.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[274.0, 50, '%', 3],[184.0, 0.5, ',', 2]

F
###Transport and magnetic properties of GdBaCo_{2}O_{5+x} single crystals: A cobalt oxide with square-lattice CoO_2 planes over a wide range of electron and hole doping|A. A. Taskin,A. N. Lavrov,Yoichi Ando###
(1288974, 1288974)
 We also find that throughout thecomposition range the magnetic behavior in G<missing VAR>BCO is governed by a delicatebalance between ferromagnetic (FM) and antiferromagnetic (AF) interactions,which can be easily affected by temperature, doping, or magnetic field,bringing about FM<missing VAR>-AF transitions and a giant magnetoresistance (MR) phenomenon.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[278.0, 50, '%', 3],[188.0, 0.5, ',', 2]

Co
###Transport and magnetic properties of GdBaCo_{2}O_{5+x} single crystals: A cobalt oxide with square-lattice CoO_2 planes over a wide range of electron and hole doping|A. A. Taskin,A. N. Lavrov,Yoichi Ando###
(1289009, 1289009)
An exceptionally strong uniaxial anisotropy of the Co spins, which dramaticallysimplifies the possible spin arrangements, together with the possibility ofcontinuous ambipolar doping turn G<missing VAR>BCO into a model system for studying thecompeting magnetic interactions, nanoscopic phase separation and accompanyingmagnetoresistance phenomena.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[313.0, 50, '%', 4],[223.0, 0.5, ',', 3]

BCO
###Transport and magnetic properties of GdBaCo_{2}O_{5+x} single crystals: A cobalt oxide with square-lattice CoO_2 planes over a wide range of electron and hole doping|A. A. Taskin,A. N. Lavrov,Yoichi Ando###
(1289050, 1289052)
An exceptionally strong uniaxial anisotropy of the Co spins, which dramaticallysimplifies the possible spin arrangements, together with the possibility ofcontinuous ambipolar doping turn G<missing VAR>BCO into a model system for studying thecompeting magnetic interactions, nanoscopic phase separation and accompanyingmagnetoresistance phenomena.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[354.0, 50, '%', 4],[264.0, 0.5, ',', 3]

CeCoIn5
###c-axis magnetotransport in CeCoIn$_{5}$|A. Malinowski,M. F. Hundley,C. Capan,F. Ronning,R. Movshovich,N. O. Moreno,J. L. Sarrao,J. D. Thompson###
(1289108, 1289111)
c<missing VAR>-axis magnetotransport in CeCoIn5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7142857142857143,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 40, 'mK', 1],[66.0, 9, 'T', 1],[74.0, 10, 'K', 2],[116.0, 0, 'K', 2],[212.0, 50, 'and', 3],[213.0, 100, 'K', 3],[250.0, 16, 'K', 4],[347.0, 2.6, 'K', 6],[353.0, 8, 'K', 6],[453.0, 130, 'mK', 7]

CeCoIn5
###c-axis magnetotransport in CeCoIn$_{5}$|A. Malinowski,M. F. Hundley,C. Capan,F. Ronning,R. Movshovich,N. O. Moreno,J. L. Sarrao,J. D. Thompson###
(1289147, 1289150)
 We present the results of out-of-plane electrical transport measurements onthe heavy fermion superconductor CeCoIn5 at temperatures from 40 mK to 400K and in magnetic field up to 9 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7142857142857143,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 40, 'mK', 0],[27.0, 9, 'T', 0],[35.0, 10, 'K', 1],[77.0, 0, 'K', 1],[173.0, 50, 'and', 2],[174.0, 100, 'K', 2],[211.0, 16, 'K', 3],[308.0, 2.6, 'K', 5],[314.0, 8, 'K', 5],[414.0, 130, 'mK', 6]

K
###c-axis magnetotransport in CeCoIn$_{5}$|A. Malinowski,M. F. Hundley,C. Capan,F. Ronning,R. Movshovich,N. O. Moreno,J. L. Sarrao,J. D. Thompson###
(1289164, 1289164)
 We present the results of out-of-plane electrical transport measurements onthe heavy fermion superconductor CeCoIn5 at temperatures from 40 mK to 400K and in magnetic field up to 9 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 40, 'mK', 0],[13.0, 9, 'T', 0],[21.0, 10, 'K', 1],[63.0, 0, 'K', 1],[159.0, 50, 'and', 2],[160.0, 100, 'K', 2],[197.0, 16, 'K', 3],[294.0, 2.6, 'K', 5],[300.0, 8, 'K', 5],[400.0, 130, 'mK', 6]

P
###c-axis magnetotransport in CeCoIn$_{5}$|A. Malinowski,M. F. Hundley,C. Capan,F. Ronning,R. Movshovich,N. O. Moreno,J. L. Sarrao,J. D. Thompson###
(1289264, 1289264)
 For T<missing VAR> < 10 K transport measurements showthat the zero-field resistivity rhoc<missing VAR> changes linearly with temperatureand extrapolates nearly to zero at 0 K, indicative of non-Fermi-liquid (nFL)behavior associated with a quantum critical point (Q<missing VAR>CP).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 40, 'mK', 1],[87.0, 9, 'T', 1],[79.0, 10, 'K', 0],[37.0, 0, 'K', 0],[59.0, 50, 'and', 1],[60.0, 100, 'K', 1],[97.0, 16, 'K', 2],[194.0, 2.6, 'K', 4],[200.0, 8, 'K', 4],[300.0, 130, 'mK', 5]

CeCoIn5
###c-axis magnetotransport in CeCoIn$_{5}$|A. Malinowski,M. F. Hundley,C. Capan,F. Ronning,R. Movshovich,N. O. Moreno,J. L. Sarrao,J. D. Thompson###
(1289283, 1289286)
 The longitudinalmagnetoresistance (LMR) of CeCoIn5 for fields applied parallel to thec<missing VAR>-axis is negative and scales as B/(TT) between 50 and 100 K, revealingthe presence of a single-impurity Kondo energy scale T<missing VAR> sim 2 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7142857142857143,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 40, 'mK', 2],[106.0, 9, 'T', 2],[98.0, 10, 'K', 1],[56.0, 0, 'K', 1],[37.0, 50, 'and', 0],[38.0, 100, 'K', 0],[75.0, 16, 'K', 1],[172.0, 2.6, 'K', 3],[178.0, 8, 'K', 3],[278.0, 130, 'mK', 4]

K
###c-axis magnetotransport in CeCoIn$_{5}$|A. Malinowski,M. F. Hundley,C. Capan,F. Ronning,R. Movshovich,N. O. Moreno,J. L. Sarrao,J. D. Thompson###
(1289354, 1289354)
 The longitudinalmagnetoresistance (LMR) of CeCoIn5 for fields applied parallel to thec<missing VAR>-axis is negative and scales as B/(TT) between 50 and 100 K, revealingthe presence of a single-impurity Kondo energy scale T<missing VAR> sim 2 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[197.0, 40, 'mK', 2],[177.0, 9, 'T', 2],[169.0, 10, 'K', 1],[127.0, 0, 'K', 1],[31.0, 50, 'and', 0],[30.0, 100, 'K', 0],[7.0, 16, 'K', 1],[104.0, 2.6, 'K', 3],[110.0, 8, 'K', 3],[210.0, 130, 'mK', 4]

B2
###c-axis magnetotransport in CeCoIn$_{5}$|A. Malinowski,M. F. Hundley,C. Capan,F. Ronning,R. Movshovich,N. O. Moreno,J. L. Sarrao,J. D. Thompson###
(1289452, 1289453)
This sizable negative magnetoresistance scales as B2/T<missing VAR> from 2.6 K toroughly 8 K, and it arises from an extrapolated residual resistivity thatbecomes negative and grows quadratically with field in the nFL temperatureregime.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[295.0, 40, 'mK', 5],[275.0, 9, 'T', 5],[267.0, 10, 'K', 4],[225.0, 0, 'K', 4],[129.0, 50, 'and', 3],[128.0, 100, 'K', 3],[91.0, 16, 'K', 2],[5.0, 2.6, 'K', 0],[11.0, 8, 'K', 0],[111.0, 130, 'mK', 1]

B
###c-axis magnetotransport in CeCoIn$_{5}$|A. Malinowski,M. F. Hundley,C. Capan,F. Ronning,R. Movshovich,N. O. Moreno,J. L. Sarrao,J. D. Thompson###
(1289532, 1289532)
 Applying a magnetic field along the c<missing VAR>-axis with B > Bc<missing VAR>2 restoresFermi-liquid behavior in rhoc(T) at T<missing VAR> less than 130 mK.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[375.0, 40, 'mK', 6],[355.0, 9, 'T', 6],[347.0, 10, 'K', 5],[305.0, 0, 'K', 5],[209.0, 50, 'and', 4],[208.0, 100, 'K', 4],[171.0, 16, 'K', 3],[74.0, 2.6, 'K', 1],[68.0, 8, 'K', 1],[32.0, 130, 'mK', 0]

B
###c-axis magnetotransport in CeCoIn$_{5}$|A. Malinowski,M. F. Hundley,C. Capan,F. Ronning,R. Movshovich,N. O. Moreno,J. L. Sarrao,J. D. Thompson###
(1289536, 1289536)
 Applying a magnetic field along the c<missing VAR>-axis with B > Bc<missing VAR>2 restoresFermi-liquid behavior in rhoc(T) at T<missing VAR> less than 130 mK.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[379.0, 40, 'mK', 6],[359.0, 9, 'T', 6],[351.0, 10, 'K', 5],[309.0, 0, 'K', 5],[213.0, 50, 'and', 4],[212.0, 100, 'K', 4],[175.0, 16, 'K', 3],[78.0, 2.6, 'K', 1],[72.0, 8, 'K', 1],[28.0, 130, 'mK', 0]

CP
###c-axis magnetotransport in CeCoIn$_{5}$|A. Malinowski,M. F. Hundley,C. Capan,F. Ronning,R. Movshovich,N. O. Moreno,J. L. Sarrao,J. D. Thompson###
(1289593, 1289594)
 Analysis of theT<missing VAR>2 resistivity coefficients<missing VAR> field-dependence suggests that the Q<missing VAR>CP inCeCoIn5 is located emphbelow the upper critical field, inside thesuperconducting phase.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[436.0, 40, 'mK', 7],[416.0, 9, 'T', 7],[408.0, 10, 'K', 6],[366.0, 0, 'K', 6],[270.0, 50, 'and', 5],[269.0, 100, 'K', 5],[232.0, 16, 'K', 4],[135.0, 2.6, 'K', 2],[129.0, 8, 'K', 2],[29.0, 130, 'mK', 1]

CeCoIn5
###c-axis magnetotransport in CeCoIn$_{5}$|A. Malinowski,M. F. Hundley,C. Capan,F. Ronning,R. Movshovich,N. O. Moreno,J. L. Sarrao,J. D. Thompson###
(1289599, 1289602)
 Analysis of theT<missing VAR>2 resistivity coefficients<missing VAR> field-dependence suggests that the Q<missing VAR>CP inCeCoIn5 is located emphbelow the upper critical field, inside thesuperconducting phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7142857142857143,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[442.0, 40, 'mK', 7],[422.0, 9, 'T', 7],[414.0, 10, 'K', 6],[372.0, 0, 'K', 6],[276.0, 50, 'and', 5],[275.0, 100, 'K', 5],[238.0, 16, 'K', 4],[141.0, 2.6, 'K', 2],[135.0, 8, 'K', 2],[35.0, 130, 'mK', 1]

CeCoIn5
###c-axis magnetotransport in CeCoIn$_{5}$|A. Malinowski,M. F. Hundley,C. Capan,F. Ronning,R. Movshovich,N. O. Moreno,J. L. Sarrao,J. D. Thompson###
(1289653, 1289656)
 These data indicate that while high-T c-axis transportof CeCoIn5 exhibits features typical for a heavy fermion system, low-T<missing VAR>transport is governed both by spin fluctuations associated with the Q<missing VAR>CP andKondo interactions that are influenced by the underlying complex electronicstructure intrinsic to the anisotropic CeCoIn5 crystal structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7142857142857143,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[496.0, 40, 'mK', 8],[476.0, 9, 'T', 8],[468.0, 10, 'K', 7],[426.0, 0, 'K', 7],[330.0, 50, 'and', 6],[329.0, 100, 'K', 6],[292.0, 16, 'K', 5],[195.0, 2.6, 'K', 3],[189.0, 8, 'K', 3],[89.0, 130, 'mK', 2]

CP
###c-axis magnetotransport in CeCoIn$_{5}$|A. Malinowski,M. F. Hundley,C. Capan,F. Ronning,R. Movshovich,N. O. Moreno,J. L. Sarrao,J. D. Thompson###
(1289701, 1289702)
 These data indicate that while high-T c-axis transportof CeCoIn5 exhibits features typical for a heavy fermion system, low-T<missing VAR>transport is governed both by spin fluctuations associated with the Q<missing VAR>CP andKondo interactions that are influenced by the underlying complex electronicstructure intrinsic to the anisotropic CeCoIn5 crystal structure.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[544.0, 40, 'mK', 8],[524.0, 9, 'T', 8],[516.0, 10, 'K', 7],[474.0, 0, 'K', 7],[378.0, 50, 'and', 6],[377.0, 100, 'K', 6],[340.0, 16, 'K', 5],[243.0, 2.6, 'K', 3],[237.0, 8, 'K', 3],[137.0, 130, 'mK', 2]

CeCoIn5
###c-axis magnetotransport in CeCoIn$_{5}$|A. Malinowski,M. F. Hundley,C. Capan,F. Ronning,R. Movshovich,N. O. Moreno,J. L. Sarrao,J. D. Thompson###
(1289738, 1289741)
 These data indicate that while high-T c-axis transportof CeCoIn5 exhibits features typical for a heavy fermion system, low-T<missing VAR>transport is governed both by spin fluctuations associated with the Q<missing VAR>CP andKondo interactions that are influenced by the underlying complex electronicstructure intrinsic to the anisotropic CeCoIn5 crystal structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7142857142857143,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[581.0, 40, 'mK', 8],[561.0, 9, 'T', 8],[553.0, 10, 'K', 7],[511.0, 0, 'K', 7],[415.0, 50, 'and', 6],[414.0, 100, 'K', 6],[377.0, 16, 'K', 5],[280.0, 2.6, 'K', 3],[274.0, 8, 'K', 3],[174.0, 130, 'mK', 2]

La2
###Magnetization depinning transition, anisotropic magnetoresistance and inplane anisotropy in two polytypes of La$_{2 / 3}$Sr$_{1 / 3}$MnO$_{3}$ epitaxial films|Soumen Mandal,R. C. Budhani###
(1289781, 1289782)
Magnetization depinning transition, anisotropic magnetoresistance and inplane anisotropy in two polytypes of La2 / 3Sr1 / 3MnO3 epitaxial films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 10, 'and', 1],[134.0, 300, 'K', 1],[522.0, 3500, 'Oe', 7],[535.0, 300, 'K', 7]

Sr1
###Magnetization depinning transition, anisotropic magnetoresistance and inplane anisotropy in two polytypes of La$_{2 / 3}$Sr$_{1 / 3}$MnO$_{3}$ epitaxial films|Soumen Mandal,R. C. Budhani###
(1289787, 1289788)
Magnetization depinning transition, anisotropic magnetoresistance and inplane anisotropy in two polytypes of La2 / 3Sr1 / 3MnO3 epitaxial films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 10, 'and', 1],[128.0, 300, 'K', 1],[516.0, 3500, 'Oe', 7],[529.0, 300, 'K', 7]

MnO3
###Magnetization depinning transition, anisotropic magnetoresistance and inplane anisotropy in two polytypes of La$_{2 / 3}$Sr$_{1 / 3}$MnO$_{3}$ epitaxial films|Soumen Mandal,R. C. Budhani###
(1289793, 1289795)
Magnetization depinning transition, anisotropic magnetoresistance and inplane anisotropy in two polytypes of La2 / 3Sr1 / 3MnO3 epitaxial films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 10, 'and', 1],[121.0, 300, 'K', 1],[509.0, 3500, 'Oe', 7],[522.0, 300, 'K', 7]

La2
###Magnetization depinning transition, anisotropic magnetoresistance and inplane anisotropy in two polytypes of La$_{2 / 3}$Sr$_{1 / 3}$MnO$_{3}$ epitaxial films|Soumen Mandal,R. C. Budhani###
(1289834, 1289835)
 The isothermal magnetoresistance [R<missing VAR>(theta)] of [001] and [110] epitaxialfilms of La2 / 3Sr1 / 3MnO3 measured as a function of the angletheta between current (vecI) and magnetic field (vecH), both inthe plane of the film, is measured at several temperatures between 10 and 300K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 10, 'and', 0],[81.0, 300, 'K', 0],[469.0, 3500, 'Oe', 6],[482.0, 300, 'K', 6]

Sr1
###Magnetization depinning transition, anisotropic magnetoresistance and inplane anisotropy in two polytypes of La$_{2 / 3}$Sr$_{1 / 3}$MnO$_{3}$ epitaxial films|Soumen Mandal,R. C. Budhani###
(1289840, 1289841)
 The isothermal magnetoresistance [R<missing VAR>(theta)] of [001] and [110] epitaxialfilms of La2 / 3Sr1 / 3MnO3 measured as a function of the angletheta between current (vecI) and magnetic field (vecH), both inthe plane of the film, is measured at several temperatures between 10 and 300K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 10, 'and', 0],[75.0, 300, 'K', 0],[463.0, 3500, 'Oe', 6],[476.0, 300, 'K', 6]

MnO3
###Magnetization depinning transition, anisotropic magnetoresistance and inplane anisotropy in two polytypes of La$_{2 / 3}$Sr$_{1 / 3}$MnO$_{3}$ epitaxial films|Soumen Mandal,R. C. Budhani###
(1289846, 1289848)
 The isothermal magnetoresistance [R<missing VAR>(theta)] of [001] and [110] epitaxialfilms of La2 / 3Sr1 / 3MnO3 measured as a function of the angletheta between current (vecI) and magnetic field (vecH), both inthe plane of the film, is measured at several temperatures between 10 and 300K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 10, 'and', 0],[68.0, 300, 'K', 0],[456.0, 3500, 'Oe', 6],[469.0, 300, 'K', 6]

I
###Magnetization depinning transition, anisotropic magnetoresistance and inplane anisotropy in two polytypes of La$_{2 / 3}$Sr$_{1 / 3}$MnO$_{3}$ epitaxial films|Soumen Mandal,R. C. Budhani###
(1289873, 1289873)
 The isothermal magnetoresistance [R<missing VAR>(theta)] of [001] and [110] epitaxialfilms of La2 / 3Sr1 / 3MnO3 measured as a function of the angletheta between current (vecI) and magnetic field (vecH), both inthe plane of the film, is measured at several temperatures between 10 and 300K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 10, 'and', 0],[43.0, 300, 'K', 0],[431.0, 3500, 'Oe', 6],[444.0, 300, 'K', 6]

H
###Magnetization depinning transition, anisotropic magnetoresistance and inplane anisotropy in two polytypes of La$_{2 / 3}$Sr$_{1 / 3}$MnO$_{3}$ epitaxial films|Soumen Mandal,R. C. Budhani###
(1289884, 1289884)
 The isothermal magnetoresistance [R<missing VAR>(theta)] of [001] and [110] epitaxialfilms of La2 / 3Sr1 / 3MnO3 measured as a function of the angletheta between current (vecI) and magnetic field (vecH), both inthe plane of the film, is measured at several temperatures between 10 and 300K.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 10, 'and', 0],[32.0, 300, 'K', 0],[420.0, 3500, 'Oe', 6],[433.0, 300, 'K', 6]

Mn
###Magnetization depinning transition, anisotropic magnetoresistance and inplane anisotropy in two polytypes of La$_{2 / 3}$Sr$_{1 / 3}$MnO$_{3}$ epitaxial films|Soumen Mandal,R. C. Budhani###
(1289949, 1289949)
The magnetic easy axis of these polytypes is intimately related to theorientation of Mn - O - Mn bonds with respect to the crystallographic axis onthe plane of the substrate and energy equivalence of some of these axes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 10, 'and', 1],[33.0, 300, 'K', 1],[355.0, 3500, 'Oe', 5],[368.0, 300, 'K', 5]

O
###Magnetization depinning transition, anisotropic magnetoresistance and inplane anisotropy in two polytypes of La$_{2 / 3}$Sr$_{1 / 3}$MnO$_{3}$ epitaxial films|Soumen Mandal,R. C. Budhani###
(1289953, 1289953)
The magnetic easy axis of these polytypes is intimately related to theorientation of Mn - O - Mn bonds with respect to the crystallographic axis onthe plane of the substrate and energy equivalence of some of these axes.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 10, 'and', 1],[37.0, 300, 'K', 1],[351.0, 3500, 'Oe', 5],[364.0, 300, 'K', 5]

Mn
###Magnetization depinning transition, anisotropic magnetoresistance and inplane anisotropy in two polytypes of La$_{2 / 3}$Sr$_{1 / 3}$MnO$_{3}$ epitaxial films|Soumen Mandal,R. C. Budhani###
(1289957, 1289957)
The magnetic easy axis of these polytypes is intimately related to theorientation of Mn - O - Mn bonds with respect to the crystallographic axis onthe plane of the substrate and energy equivalence of some of these axes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 10, 'and', 1],[41.0, 300, 'K', 1],[347.0, 3500, 'Oe', 5],[360.0, 300, 'K', 5]

P
###Magnetization depinning transition, anisotropic magnetoresistance and inplane anisotropy in two polytypes of La$_{2 / 3}$Sr$_{1 / 3}$MnO$_{3}$ epitaxial films|Soumen Mandal,R. C. Budhani###
(1290077, 1290077)
 Amagnetization orientation phase transition (MRPT) which manifests itself as adiscontinuity and hysteresis in R<missing VAR>(psi) where psi is the angle betweenvecH and the easy axis for the vecH below a critical valuevecH has been established.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 10, 'and', 3],[161.0, 300, 'K', 3],[227.0, 3500, 'Oe', 3],[240.0, 300, 'K', 3]

H
###Magnetization depinning transition, anisotropic magnetoresistance and inplane anisotropy in two polytypes of La$_{2 / 3}$Sr$_{1 / 3}$MnO$_{3}$ epitaxial films|Soumen Mandal,R. C. Budhani###
(1290119, 1290119)
 Amagnetization orientation phase transition (MRPT) which manifests itself as adiscontinuity and hysteresis in R<missing VAR>(psi) where psi is the angle betweenvecH and the easy axis for the vecH below a critical valuevecH has been established.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[204.0, 10, 'and', 3],[203.0, 300, 'K', 3],[185.0, 3500, 'Oe', 3],[198.0, 300, 'K', 3]

H
###Magnetization depinning transition, anisotropic magnetoresistance and inplane anisotropy in two polytypes of La$_{2 / 3}$Sr$_{1 / 3}$MnO$_{3}$ epitaxial films|Soumen Mandal,R. C. Budhani###
(1290134, 1290134)
 Amagnetization orientation phase transition (MRPT) which manifests itself as adiscontinuity and hysteresis in R<missing VAR>(psi) where psi is the angle betweenvecH and the easy axis for the vecH below a critical valuevecH has been established.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[219.0, 10, 'and', 3],[218.0, 300, 'K', 3],[170.0, 3500, 'Oe', 3],[183.0, 300, 'K', 3]

H
###Magnetization depinning transition, anisotropic magnetoresistance and inplane anisotropy in two polytypes of La$_{2 / 3}$Sr$_{1 / 3}$MnO$_{3}$ epitaxial films|Soumen Mandal,R. C. Budhani###
(1290146, 1290146)
 Amagnetization orientation phase transition (MRPT) which manifests itself as adiscontinuity and hysteresis in R<missing VAR>(psi) where psi is the angle betweenvecH and the easy axis for the vecH below a critical valuevecH has been established.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[231.0, 10, 'and', 3],[230.0, 300, 'K', 3],[158.0, 3500, 'Oe', 3],[171.0, 300, 'K', 3]

H
###Magnetization depinning transition, anisotropic magnetoresistance and inplane anisotropy in two polytypes of La$_{2 / 3}$Sr$_{1 / 3}$MnO$_{3}$ epitaxial films|Soumen Mandal,R. C. Budhani###
(1290176, 1290176)
 The boundary of the pinned and depinned phaseon the H-T<missing VAR> plane has been established.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[261.0, 10, 'and', 4],[260.0, 300, 'K', 4],[128.0, 3500, 'Oe', 2],[141.0, 300, 'K', 2]

I
###Magnetization depinning transition, anisotropic magnetoresistance and inplane anisotropy in two polytypes of La$_{2 / 3}$Sr$_{1 / 3}$MnO$_{3}$ epitaxial films|Soumen Mandal,R. C. Budhani###
(1290246, 1290246)
 The isothermal resistance R<missing VAR>bot and R<missing VAR> for vecI bot vecHand vecI  vecH, respectively for both polytypes follows theinequality R<missing VAR>bot > R<missing VAR> for all ranges of fields (0 leq H leq 3500Oe)and temperatures (10K - 300K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[331.0, 10, 'and', 6],[330.0, 300, 'K', 6],[58.0, 3500, 'Oe', 0],[71.0, 300, 'K', 0]

H
###Magnetization depinning transition, anisotropic magnetoresistance and inplane anisotropy in two polytypes of La$_{2 / 3}$Sr$_{1 / 3}$MnO$_{3}$ epitaxial films|Soumen Mandal,R. C. Budhani###
(1290251, 1290251)
 The isothermal resistance R<missing VAR>bot and R<missing VAR> for vecI bot vecHand vecI  vecH, respectively for both polytypes follows theinequality R<missing VAR>bot > R<missing VAR> for all ranges of fields (0 leq H leq 3500Oe)and temperatures (10K - 300K).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[336.0, 10, 'and', 6],[335.0, 300, 'K', 6],[53.0, 3500, 'Oe', 0],[66.0, 300, 'K', 0]

I
###Magnetization depinning transition, anisotropic magnetoresistance and inplane anisotropy in two polytypes of La$_{2 / 3}$Sr$_{1 / 3}$MnO$_{3}$ epitaxial films|Soumen Mandal,R. C. Budhani###
(1290257, 1290257)
 The isothermal resistance R<missing VAR>bot and R<missing VAR> for vecI bot vecHand vecI  vecH, respectively for both polytypes follows theinequality R<missing VAR>bot > R<missing VAR> for all ranges of fields (0 leq H leq 3500Oe)and temperatures (10K - 300K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[342.0, 10, 'and', 6],[341.0, 300, 'K', 6],[47.0, 3500, 'Oe', 0],[60.0, 300, 'K', 0]

H
###Magnetization depinning transition, anisotropic magnetoresistance and inplane anisotropy in two polytypes of La$_{2 / 3}$Sr$_{1 / 3}$MnO$_{3}$ epitaxial films|Soumen Mandal,R. C. Budhani###
(1290261, 1290261)
 The isothermal resistance R<missing VAR>bot and R<missing VAR> for vecI bot vecHand vecI  vecH, respectively for both polytypes follows theinequality R<missing VAR>bot > R<missing VAR> for all ranges of fields (0 leq H leq 3500Oe)and temperatures (10K - 300K).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[346.0, 10, 'and', 6],[345.0, 300, 'K', 6],[43.0, 3500, 'Oe', 0],[56.0, 300, 'K', 0]

H
###Magnetization depinning transition, anisotropic magnetoresistance and inplane anisotropy in two polytypes of La$_{2 / 3}$Sr$_{1 / 3}$MnO$_{3}$ epitaxial films|Soumen Mandal,R. C. Budhani###
(1290301, 1290301)
 The isothermal resistance R<missing VAR>bot and R<missing VAR> for vecI bot vecHand vecI  vecH, respectively for both polytypes follows theinequality R<missing VAR>bot > R<missing VAR> for all ranges of fields (0 leq H leq 3500Oe)and temperatures (10K - 300K).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[386.0, 10, 'and', 6],[385.0, 300, 'K', 6],[3.0, 3500, 'Oe', 0],[16.0, 300, 'K', 0]

K
###Magnetization depinning transition, anisotropic magnetoresistance and inplane anisotropy in two polytypes of La$_{2 / 3}$Sr$_{1 / 3}$MnO$_{3}$ epitaxial films|Soumen Mandal,R. C. Budhani###
(1290314, 1290314)
 The isothermal resistance R<missing VAR>bot and R<missing VAR> for vecI bot vecHand vecI  vecH, respectively for both polytypes follows theinequality R<missing VAR>bot > R<missing VAR> for all ranges of fields (0 leq H leq 3500Oe)and temperatures (10K - 300K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[399.0, 10, 'and', 6],[398.0, 300, 'K', 6],[10.0, 3500, 'Oe', 0],[3.0, 300, 'K', 0]

In
###Long Range Coulomb Interactions and Nanoscale Electronic Inhomogeneities in Correlated Oxides|Vijay B. Shenoy,Tribikram Gupta,H. R. Krishnamurthy,T. V. Ramakrishnan###
(1290591, 1290591)
 In the ell-b<missing VAR> model two very different kinds of electronicstates, one localized and polaronic (ell), and the other extended or broadband (b) co-exist.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 92, ',', 1]

F
###Long Range Coulomb Interactions and Nanoscale Electronic Inhomogeneities in Correlated Oxides|Vijay B. Shenoy,Tribikram Gupta,H. R. Krishnamurthy,T. V. Ramakrishnan###
(1290689, 1290689)
 For model parameters appropriate to manganites, and evenwithin a simple dynamical mean-filed theory (DMFT) framework, it describes manyof the unusual phenomena seen in manganites, including colossalmagnetoresistance (CMR), qualitatively and quantitatively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 92, ',', 2]

C
###Long Range Coulomb Interactions and Nanoscale Electronic Inhomogeneities in Correlated Oxides|Vijay B. Shenoy,Tribikram Gupta,H. R. Krishnamurthy,T. V. Ramakrishnan###
(1290726, 1290726)
 For model parameters appropriate to manganites, and evenwithin a simple dynamical mean-filed theory (DMFT) framework, it describes manyof the unusual phenomena seen in manganites, including colossalmagnetoresistance (CMR), qualitatively and quantitatively.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 92, ',', 2]

As
###Long Range Coulomb Interactions and Nanoscale Electronic Inhomogeneities in Correlated Oxides|Vijay B. Shenoy,Tribikram Gupta,H. R. Krishnamurthy,T. V. Ramakrishnan###
(1290804, 1290804)
 As we show in this paper, in the presence of Coulombinteractions, the em macroscopic phase separation gets suppressed, andinstead nanometer scale regions of polarons interspersed with band electronpuddles appear, constituting a new kind of quantum Coulomb glass.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[241.0, 92, ',', 4]

SmFeAsO
###{Rearrangement of the antiferromagnetic ordering at high magnetic fields in SmFeAsO and SmFeAsO$_{0.9}$F$_{0.1}$ single crystals|S. Weyeneth,P. J. W. Moll,R. Puzniak,K. Ninios,F. F. Balakirev,R. D. McDonald,H. B. Chan,N. D. Zhigadlo,S. Katrych,Z. Bukowski,J. Karpinski,H. Keller,B. Batlogg,L. Balicas###
(1291067, 1291070)
Rearrangement of the antiferromagnetic ordering at high magnetic fields in SmFeAsO and SmFeAsO0.9F0.1 single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SmFeAsO0.9F0.1
###{Rearrangement of the antiferromagnetic ordering at high magnetic fields in SmFeAsO and SmFeAsO$_{0.9}$F$_{0.1}$ single crystals|S. Weyeneth,P. J. W. Moll,R. Puzniak,K. Ninios,F. F. Balakirev,R. D. McDonald,H. B. Chan,N. D. Zhigadlo,S. Katrych,Z. Bukowski,J. Karpinski,H. Keller,B. Batlogg,L. Balicas###
(1291074, 1291080)
Rearrangement of the antiferromagnetic ordering at high magnetic fields in SmFeAsO and SmFeAsO0.9F0.1 single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0.225,0.025,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sm
###{Rearrangement of the antiferromagnetic ordering at high magnetic fields in SmFeAsO and SmFeAsO$_{0.9}$F$_{0.1}$ single crystals|S. Weyeneth,P. J. W. Moll,R. Puzniak,K. Ninios,F. F. Balakirev,R. D. McDonald,H. B. Chan,N. D. Zhigadlo,S. Katrych,Z. Bukowski,J. Karpinski,H. Keller,B. Batlogg,L. Balicas###
(1291101, 1291101)
 The low-temperature antiferromagnetic state of the Sm-ions in bothnonsuperconducting SmFeAsO and superconducting SmFeAsO0.9F0.1 singlecrystals was studied by magnetic torque, magnetization, and magnetoresistancemeasurements in magnetic fields up to 60T<missing VAR> and temperatures down to 0.6K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SmFeAsO
###{Rearrangement of the antiferromagnetic ordering at high magnetic fields in SmFeAsO and SmFeAsO$_{0.9}$F$_{0.1}$ single crystals|S. Weyeneth,P. J. W. Moll,R. Puzniak,K. Ninios,F. F. Balakirev,R. D. McDonald,H. B. Chan,N. D. Zhigadlo,S. Katrych,Z. Bukowski,J. Karpinski,H. Keller,B. Batlogg,L. Balicas###
(1291112, 1291115)
 The low-temperature antiferromagnetic state of the Sm-ions in bothnonsuperconducting SmFeAsO and superconducting SmFeAsO0.9F0.1 singlecrystals was studied by magnetic torque, magnetization, and magnetoresistancemeasurements in magnetic fields up to 60T<missing VAR> and temperatures down to 0.6K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SmFeAsO0.9F0.1
###{Rearrangement of the antiferromagnetic ordering at high magnetic fields in SmFeAsO and SmFeAsO$_{0.9}$F$_{0.1}$ single crystals|S. Weyeneth,P. J. W. Moll,R. Puzniak,K. Ninios,F. F. Balakirev,R. D. McDonald,H. B. Chan,N. D. Zhigadlo,S. Katrych,Z. Bukowski,J. Karpinski,H. Keller,B. Batlogg,L. Balicas###
(1291121, 1291127)
 The low-temperature antiferromagnetic state of the Sm-ions in bothnonsuperconducting SmFeAsO and superconducting SmFeAsO0.9F0.1 singlecrystals was studied by magnetic torque, magnetization, and magnetoresistancemeasurements in magnetic fields up to 60T<missing VAR> and temperatures down to 0.6K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.225,0.025,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###{Rearrangement of the antiferromagnetic ordering at high magnetic fields in SmFeAsO and SmFeAsO$_{0.9}$F$_{0.1}$ single crystals|S. Weyeneth,P. J. W. Moll,R. Puzniak,K. Ninios,F. F. Balakirev,R. D. McDonald,H. B. Chan,N. D. Zhigadlo,S. Katrych,Z. Bukowski,J. Karpinski,H. Keller,B. Batlogg,L. Balicas###
(1291177, 1291177)
 The low-temperature antiferromagnetic state of the Sm-ions in bothnonsuperconducting SmFeAsO and superconducting SmFeAsO0.9F0.1 singlecrystals was studied by magnetic torque, magnetization, and magnetoresistancemeasurements in magnetic fields up to 60T<missing VAR> and temperatures down to 0.6K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sm
###{Rearrangement of the antiferromagnetic ordering at high magnetic fields in SmFeAsO and SmFeAsO$_{0.9}$F$_{0.1}$ single crystals|S. Weyeneth,P. J. W. Moll,R. Puzniak,K. Ninios,F. F. Balakirev,R. D. McDonald,H. B. Chan,N. D. Zhigadlo,S. Katrych,Z. Bukowski,J. Karpinski,H. Keller,B. Batlogg,L. Balicas###
(1291206, 1291206)
 Weuncover in both compounds a distinct rearrangement of the antiferromagneticallyordered Sm-moments near 35-40T<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeAs
###{Rearrangement of the antiferromagnetic ordering at high magnetic fields in SmFeAsO and SmFeAsO$_{0.9}$F$_{0.1}$ single crystals|S. Weyeneth,P. J. W. Moll,R. Puzniak,K. Ninios,F. F. Balakirev,R. D. McDonald,H. B. Chan,N. D. Zhigadlo,S. Katrych,Z. Bukowski,J. Karpinski,H. Keller,B. Batlogg,L. Balicas###
(1291311, 1291312)
 the FeAs-layers), and as a jump in the magnetizationfor magnetic fields perpendicular to the conducting planes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sm
###{Rearrangement of the antiferromagnetic ordering at high magnetic fields in SmFeAsO and SmFeAsO$_{0.9}$F$_{0.1}$ single crystals|S. Weyeneth,P. J. W. Moll,R. Puzniak,K. Ninios,F. F. Balakirev,R. D. McDonald,H. B. Chan,N. D. Zhigadlo,S. Katrych,Z. Bukowski,J. Karpinski,H. Keller,B. Batlogg,L. Balicas###
(1291457, 1291457)
 However, the observed value for the saturation moment abovethis rearrangement, suggests that the complete suppression of theantiferromagnetism related to the Sm-moments would require fields in excess of60T<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###{Rearrangement of the antiferromagnetic ordering at high magnetic fields in SmFeAsO and SmFeAsO$_{0.9}$F$_{0.1}$ single crystals|S. Weyeneth,P. J. W. Moll,R. Puzniak,K. Ninios,F. F. Balakirev,R. D. McDonald,H. B. Chan,N. D. Zhigadlo,S. Katrych,Z. Bukowski,J. Karpinski,H. Keller,B. Batlogg,L. Balicas###
(1291507, 1291507)
 Such a large field value is particularly remarkable when compared to therelatively small Ne<missing VAR>el temperature T<missing VAR>rm Nsimeq5K, suggesting veryanisotropic magnetic exchange couplings.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###{Rearrangement of the antiferromagnetic ordering at high magnetic fields in SmFeAsO and SmFeAsO$_{0.9}$F$_{0.1}$ single crystals|S. Weyeneth,P. J. W. Moll,R. Puzniak,K. Ninios,F. F. Balakirev,R. D. McDonald,H. B. Chan,N. D. Zhigadlo,S. Katrych,Z. Bukowski,J. Karpinski,H. Keller,B. Batlogg,L. Balicas###
(1291516, 1291516)
 Such a large field value is particularly remarkable when compared to therelatively small Ne<missing VAR>el temperature T<missing VAR>rm Nsimeq5K, suggesting veryanisotropic magnetic exchange couplings.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###{Rearrangement of the antiferromagnetic ordering at high magnetic fields in SmFeAsO and SmFeAsO$_{0.9}$F$_{0.1}$ single crystals|S. Weyeneth,P. J. W. Moll,R. Puzniak,K. Ninios,F. F. Balakirev,R. D. McDonald,H. B. Chan,N. D. Zhigadlo,S. Katrych,Z. Bukowski,J. Karpinski,H. Keller,B. Batlogg,L. Balicas###
(1291519, 1291519)
 Such a large field value is particularly remarkable when compared to therelatively small Ne<missing VAR>el temperature T<missing VAR>rm Nsimeq5K, suggesting veryanisotropic magnetic exchange couplings.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###{Rearrangement of the antiferromagnetic ordering at high magnetic fields in SmFeAsO and SmFeAsO$_{0.9}$F$_{0.1}$ single crystals|S. Weyeneth,P. J. W. Moll,R. Puzniak,K. Ninios,F. F. Balakirev,R. D. McDonald,H. B. Chan,N. D. Zhigadlo,S. Katrych,Z. Bukowski,J. Karpinski,H. Keller,B. Batlogg,L. Balicas###
(1291536, 1291536)
 At the transition, magnetoresistivitymeasurements show a crossover from positive to negative field-dependence,indicating that the charge carriers in the FeAs planes are sensitive to themagnetic configuration of the rare-earth elements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeAs
###{Rearrangement of the antiferromagnetic ordering at high magnetic fields in SmFeAsO and SmFeAsO$_{0.9}$F$_{0.1}$ single crystals|S. Weyeneth,P. J. W. Moll,R. Puzniak,K. Ninios,F. F. Balakirev,R. D. McDonald,H. B. Chan,N. D. Zhigadlo,S. Katrych,Z. Bukowski,J. Karpinski,H. Keller,B. Batlogg,L. Balicas###
(1291582, 1291583)
 At the transition, magnetoresistivitymeasurements show a crossover from positive to negative field-dependence,indicating that the charge carriers in the FeAs planes are sensitive to themagnetic configuration of the rare-earth elements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SmO
###{Rearrangement of the antiferromagnetic ordering at high magnetic fields in SmFeAsO and SmFeAsO$_{0.9}$F$_{0.1}$ single crystals|S. Weyeneth,P. J. W. Moll,R. Puzniak,K. Ninios,F. F. Balakirev,R. D. McDonald,H. B. Chan,N. D. Zhigadlo,S. Katrych,Z. Bukowski,J. Karpinski,H. Keller,B. Batlogg,L. Balicas###
(1291632, 1291633)
 This is indicates a finitemagnetic/electronic coupling between the SmO and the FeAs layers which arelikely to mediate the exchange interactions leading to the long rangeantiferromagnetic order of the Sm ions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeAs
###{Rearrangement of the antiferromagnetic ordering at high magnetic fields in SmFeAsO and SmFeAsO$_{0.9}$F$_{0.1}$ single crystals|S. Weyeneth,P. J. W. Moll,R. Puzniak,K. Ninios,F. F. Balakirev,R. D. McDonald,H. B. Chan,N. D. Zhigadlo,S. Katrych,Z. Bukowski,J. Karpinski,H. Keller,B. Batlogg,L. Balicas###
(1291639, 1291640)
 This is indicates a finitemagnetic/electronic coupling between the SmO and the FeAs layers which arelikely to mediate the exchange interactions leading to the long rangeantiferromagnetic order of the Sm ions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sm
###{Rearrangement of the antiferromagnetic ordering at high magnetic fields in SmFeAsO and SmFeAsO$_{0.9}$F$_{0.1}$ single crystals|S. Weyeneth,P. J. W. Moll,R. Puzniak,K. Ninios,F. F. Balakirev,R. D. McDonald,H. B. Chan,N. D. Zhigadlo,S. Katrych,Z. Bukowski,J. Karpinski,H. Keller,B. Batlogg,L. Balicas###
(1291680, 1291680)
 This is indicates a finitemagnetic/electronic coupling between the SmO and the FeAs layers which arelikely to mediate the exchange interactions leading to the long rangeantiferromagnetic order of the Sm ions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Transport properties of the metallic state of overdoped cuprate superconductors from an anisotropic marginal Fermi liquid model|Jure Kokalj,Nigel E. Hussey,Ross H. McKenzie###
(1292071, 1292071)
 Previously it has been shown this self-energy candescribe a range of experimental data including angle-dependentmagnetoresistance (ADMR) and quasi-particle renormalisations determined fromspecific heat, quantum oscillations, and angle-resolved photo-emissionspectroscopy (ARPES).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tl2201
###Transport properties of the metallic state of overdoped cuprate superconductors from an anisotropic marginal Fermi liquid model|Jure Kokalj,Nigel E. Hussey,Ross H. McKenzie###
(1292146, 1292147)
 Without introducing new parameters and neglecting vertexcorrections we show that this model self-energy can give a quantitativedescription of the temperature and doping dependence of a range of reportedtransport properties of Tl2201 samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Transport properties of the metallic state of overdoped cuprate superconductors from an anisotropic marginal Fermi liquid model|Jure Kokalj,Nigel E. Hussey,Ross H. McKenzie###
(1292249, 1292249)
 In contrast, the temperature dependenceof the Hall angle is dominated by the Fermi liquid contribution to theself-energy that determines the scattering rate in the nodal regions of theFermi surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###One-dimensional ballistic transport with FLAPW Wannier functions|Björn Hardrat,Nengping Wang,Frank Freimuth,Yuriy Mokrousov,Stefan Heinze###
(1292338, 1292338)
One-dimensional ballistic transport with FL<missing VAR>APW Wannier functions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[617.0, 7, '%', 9],[638.0, 100, '%', 9]

PW
###One-dimensional ballistic transport with FLAPW Wannier functions|Björn Hardrat,Nengping Wang,Frank Freimuth,Yuriy Mokrousov,Stefan Heinze###
(1292341, 1292342)
One-dimensional ballistic transport with FL<missing VAR>APW Wannier functions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[613.0, 7, '%', 9],[634.0, 100, '%', 9]

B
###One-dimensional ballistic transport with FLAPW Wannier functions|Björn Hardrat,Nengping Wang,Frank Freimuth,Yuriy Mokrousov,Stefan Heinze###
(1292365, 1292365)
 We present an implementation of the ballistic Landauer-Buttiker transportscheme in one-dimensional systems based on density functional theory (DFT)calculations within the full-potential linearized augmented plane-wave (FL<missing VAR>APW)method.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[590.0, 7, '%', 8],[611.0, 100, '%', 8]

F
###One-dimensional ballistic transport with FLAPW Wannier functions|Björn Hardrat,Nengping Wang,Frank Freimuth,Yuriy Mokrousov,Stefan Heinze###
(1292417, 1292417)
 We present an implementation of the ballistic Landauer-Buttiker transportscheme in one-dimensional systems based on density functional theory (DFT)calculations within the full-potential linearized augmented plane-wave (FL<missing VAR>APW)method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[538.0, 7, '%', 8],[559.0, 100, '%', 8]

W
###One-dimensional ballistic transport with FLAPW Wannier functions|Björn Hardrat,Nengping Wang,Frank Freimuth,Yuriy Mokrousov,Stefan Heinze###
(1292421, 1292421)
 We present an implementation of the ballistic Landauer-Buttiker transportscheme in one-dimensional systems based on density functional theory (DFT)calculations within the full-potential linearized augmented plane-wave (FL<missing VAR>APW)method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[534.0, 7, '%', 8],[555.0, 100, '%', 8]

In
###One-dimensional ballistic transport with FLAPW Wannier functions|Björn Hardrat,Nengping Wang,Frank Freimuth,Yuriy Mokrousov,Stefan Heinze###
(1292428, 1292428)
 In order to calculate the conductance within the Greens<missing VAR> functionmethod we map the electronic structure from the extended states of the FL<missing VAR>APWcalculation to Wannier functions which constitute a minimal localized basisset.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[527.0, 7, '%', 7],[548.0, 100, '%', 7]

F
###One-dimensional ballistic transport with FLAPW Wannier functions|Björn Hardrat,Nengping Wang,Frank Freimuth,Yuriy Mokrousov,Stefan Heinze###
(1292474, 1292474)
 In order to calculate the conductance within the Greens<missing VAR> functionmethod we map the electronic structure from the extended states of the FL<missing VAR>APWcalculation to Wannier functions which constitute a minimal localized basisset.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[481.0, 7, '%', 7],[502.0, 100, '%', 7]

PW
###One-dimensional ballistic transport with FLAPW Wannier functions|Björn Hardrat,Nengping Wang,Frank Freimuth,Yuriy Mokrousov,Stefan Heinze###
(1292477, 1292478)
 In order to calculate the conductance within the Greens<missing VAR> functionmethod we map the electronic structure from the extended states of the FL<missing VAR>APWcalculation to Wannier functions which constitute a minimal localized basisset.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[477.0, 7, '%', 7],[498.0, 100, '%', 7]

F
###One-dimensional ballistic transport with FLAPW Wannier functions|Björn Hardrat,Nengping Wang,Frank Freimuth,Yuriy Mokrousov,Stefan Heinze###
(1292525, 1292525)
 Our approach benefits from the high accuracy of the underlying FL<missing VAR>APWcalculations allowing us to address the complex interplay of structure,magnetism, and spin-orbit coupling and is ideally suited to studyspin-dependent electronic transport in one-dimensional magnetic nanostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[430.0, 7, '%', 6],[451.0, 100, '%', 6]

PW
###One-dimensional ballistic transport with FLAPW Wannier functions|Björn Hardrat,Nengping Wang,Frank Freimuth,Yuriy Mokrousov,Stefan Heinze###
(1292528, 1292529)
 Our approach benefits from the high accuracy of the underlying FL<missing VAR>APWcalculations allowing us to address the complex interplay of structure,magnetism, and spin-orbit coupling and is ideally suited to studyspin-dependent electronic transport in one-dimensional magnetic nanostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[426.0, 7, '%', 6],[447.0, 100, '%', 6]

Pt
###One-dimensional ballistic transport with FLAPW Wannier functions|Björn Hardrat,Nengping Wang,Frank Freimuth,Yuriy Mokrousov,Stefan Heinze###
(1292623, 1292623)
To illustrate our approach we study ballistic electron transport innon-magnetic Pt monowires with a single stretched bond including spin-orbitcoupling, and in ferromagnetic Co monowires with different collinear magneticalignment of the electrodes with the purpose of analysing the magnetoresistancewhen going from tunneling to the contact regime.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[332.0, 7, '%', 5],[353.0, 100, '%', 5]

Co
###One-dimensional ballistic transport with FLAPW Wannier functions|Björn Hardrat,Nengping Wang,Frank Freimuth,Yuriy Mokrousov,Stefan Heinze###
(1292653, 1292653)
To illustrate our approach we study ballistic electron transport innon-magnetic Pt monowires with a single stretched bond including spin-orbitcoupling, and in ferromagnetic Co monowires with different collinear magneticalignment of the electrodes with the purpose of analysing the magnetoresistancewhen going from tunneling to the contact regime.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[302.0, 7, '%', 5],[323.0, 100, '%', 5]

Co
###One-dimensional ballistic transport with FLAPW Wannier functions|Björn Hardrat,Nengping Wang,Frank Freimuth,Yuriy Mokrousov,Stefan Heinze###
(1292741, 1292741)
 We consider two configurationsa Co atom in a Pt monowire and vice versa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[214.0, 7, '%', 3],[235.0, 100, '%', 3]

Pt
###One-dimensional ballistic transport with FLAPW Wannier functions|Björn Hardrat,Nengping Wang,Frank Freimuth,Yuriy Mokrousov,Stefan Heinze###
(1292749, 1292749)
 We consider two configurationsa Co atom in a Pt monowire and vice versa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[206.0, 7, '%', 3],[227.0, 100, '%', 3]

In
###One-dimensional ballistic transport with FLAPW Wannier functions|Björn Hardrat,Nengping Wang,Frank Freimuth,Yuriy Mokrousov,Stefan Heinze###
(1292760, 1292760)
 In both cases, the spin-orbitinduced band mixing leads to a change of the conductance upon switching themagnetization direction from along the chain axis to perpendicular to it.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[195.0, 7, '%', 2],[216.0, 100, '%', 2]

Co
###One-dimensional ballistic transport with FLAPW Wannier functions|Björn Hardrat,Nengping Wang,Frank Freimuth,Yuriy Mokrousov,Stefan Heinze###
(1292847, 1292847)
 Themain contribution stems from ballistic spin-scattering for the magnetic Coimpurity in the non-magnetic Pt monowire and for the Pt scatterer in themagnetic Co monowire from the band formed from states with d<missing VAR>xy anddx2-y<missing VAR>2 orbital symmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 7, '%', 1],[129.0, 100, '%', 1]

Pt
###One-dimensional ballistic transport with FLAPW Wannier functions|Björn Hardrat,Nengping Wang,Frank Freimuth,Yuriy Mokrousov,Stefan Heinze###
(1292860, 1292860)
 Themain contribution stems from ballistic spin-scattering for the magnetic Coimpurity in the non-magnetic Pt monowire and for the Pt scatterer in themagnetic Co monowire from the band formed from states with d<missing VAR>xy anddx2-y<missing VAR>2 orbital symmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 7, '%', 1],[116.0, 100, '%', 1]

Pt
###One-dimensional ballistic transport with FLAPW Wannier functions|Björn Hardrat,Nengping Wang,Frank Freimuth,Yuriy Mokrousov,Stefan Heinze###
(1292870, 1292870)
 Themain contribution stems from ballistic spin-scattering for the magnetic Coimpurity in the non-magnetic Pt monowire and for the Pt scatterer in themagnetic Co monowire from the band formed from states with d<missing VAR>xy anddx2-y<missing VAR>2 orbital symmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 7, '%', 1],[106.0, 100, '%', 1]

Co
###One-dimensional ballistic transport with FLAPW Wannier functions|Björn Hardrat,Nengping Wang,Frank Freimuth,Yuriy Mokrousov,Stefan Heinze###
(1292881, 1292881)
 Themain contribution stems from ballistic spin-scattering for the magnetic Coimpurity in the non-magnetic Pt monowire and for the Pt scatterer in themagnetic Co monowire from the band formed from states with d<missing VAR>xy anddx2-y<missing VAR>2 orbital symmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 7, '%', 1],[95.0, 100, '%', 1]

Pt
###One-dimensional ballistic transport with FLAPW Wannier functions|Björn Hardrat,Nengping Wang,Frank Freimuth,Yuriy Mokrousov,Stefan Heinze###
(1292983, 1292983)
 We quantify this effect by calculating theballistic anisotropic magnetoresistance which displays values up to as much as7% for ballistic spin-scattering and gigantic values of around 100% for the Ptimpurity in the Co wire.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 7, '%', 0],[7.0, 100, '%', 0]

Co
###One-dimensional ballistic transport with FLAPW Wannier functions|Björn Hardrat,Nengping Wang,Frank Freimuth,Yuriy Mokrousov,Stefan Heinze###
(1292992, 1292992)
 We quantify this effect by calculating theballistic anisotropic magnetoresistance which displays values up to as much as7% for ballistic spin-scattering and gigantic values of around 100% for the Ptimpurity in the Co wire.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 7, '%', 0],[16.0, 100, '%', 0]

CrO2
###Resistive and magnetoresistive properties of CrO2 pressed powders with different types of inter-granular dielectric layers|N. V. Dalakova,B. I. Belevtsev,E. Yu. Beliayev,O. M. Bludov,V. A. Pashchenko,M. G. Osmolovsky,O. M. Osmolovskaya###
(1293015, 1293017)
Resistive and magnetoresistive properties of CrO2 pressed powders with different types of inter-granular dielectric layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 120, 'nm', 2],[113.0, 22.9, 'nm', 2],[123.0, 302, 'nm', 2],[262.0, 37, '%', 5],[309.0, 1, '%', 6],[321.0, 200, 'K', 6]

CrO2
###Resistive and magnetoresistive properties of CrO2 pressed powders with different types of inter-granular dielectric layers|N. V. Dalakova,B. I. Belevtsev,E. Yu. Beliayev,O. M. Bludov,V. A. Pashchenko,M. G. Osmolovsky,O. M. Osmolovskaya###
(1293062, 1293064)
 Resistive, magnetoresistive and magnetic properties of four kinds of pressedCrO2 powders, synthesized by hydrothermal method of chromic anhydride have beeninvestigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 120, 'nm', 1],[66.0, 22.9, 'nm', 1],[76.0, 302, 'nm', 1],[215.0, 37, '%', 4],[262.0, 1, '%', 5],[274.0, 200, 'K', 5]

CrOOH
###Resistive and magnetoresistive properties of CrO2 pressed powders with different types of inter-granular dielectric layers|N. V. Dalakova,B. I. Belevtsev,E. Yu. Beliayev,O. M. Bludov,V. A. Pashchenko,M. G. Osmolovsky,O. M. Osmolovskaya###
(1293182, 1293185)
 All of the particles had a surface dielectricshell of varying thickness and different types (such as oxyhydroxide -CrOOH orchromium oxide Cr2O3).
Featurization terminated normally.
0.25,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 120, 'nm', 1],[52.0, 22.9, 'nm', 1],[42.0, 302, 'nm', 1],[94.0, 37, '%', 2],[141.0, 1, '%', 3],[153.0, 200, 'K', 3]

O3
###Resistive and magnetoresistive properties of CrO2 pressed powders with different types of inter-granular dielectric layers|N. V. Dalakova,B. I. Belevtsev,E. Yu. Beliayev,O. M. Bludov,V. A. Pashchenko,M. G. Osmolovsky,O. M. Osmolovskaya###
(1293196, 1293197)
 All of the particles had a surface dielectricshell of varying thickness and different types (such as oxyhydroxide -CrOOH orchromium oxide Cr2O3).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 120, 'nm', 1],[66.0, 22.9, 'nm', 1],[56.0, 302, 'nm', 1],[82.0, 37, '%', 2],[129.0, 1, '%', 3],[141.0, 200, 'K', 3]

K
###Resistive and magnetoresistive properties of CrO2 pressed powders with different types of inter-granular dielectric layers|N. V. Dalakova,B. I. Belevtsev,E. Yu. Beliayev,O. M. Bludov,V. A. Pashchenko,M. G. Osmolovsky,O. M. Osmolovskaya###
(1293272, 1293272)
 The maximum value of MR at low temperatures (T<missing VAR> approx5 K) is approx 37% in relatively small fields (0.5 T).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 120, 'nm', 3],[142.0, 22.9, 'nm', 3],[132.0, 302, 'nm', 3],[7.0, 37, '%', 0],[54.0, 1, '%', 1],[66.0, 200, 'K', 1]

At
###Resistive and magnetoresistive properties of CrO2 pressed powders with different types of inter-granular dielectric layers|N. V. Dalakova,B. I. Belevtsev,E. Yu. Beliayev,O. M. Bludov,V. A. Pashchenko,M. G. Osmolovsky,O. M. Osmolovskaya###
(1293297, 1293297)
 At higher temperaturesthere was a rapid decrease of MR (up to approx 1% / T<missing VAR> at T<missing VAR> approx 200 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[187.0, 120, 'nm', 4],[167.0, 22.9, 'nm', 4],[157.0, 302, 'nm', 4],[18.0, 37, '%', 1],[29.0, 1, '%', 0],[41.0, 200, 'K', 0]

CrO2
###Resistive and magnetoresistive properties of CrO2 pressed powders with different types of inter-granular dielectric layers|N. V. Dalakova,B. I. Belevtsev,E. Yu. Beliayev,O. M. Bludov,V. A. Pashchenko,M. G. Osmolovsky,O. M. Osmolovskaya###
(1293389, 1293391)
 Themain objective of this work was studying the influence of properties andthickness of the intergranular dielectric layers, as well as CrO2 particleshape, on the magnitude of the tunneling resistance and MR of the pressedpowder.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[279.0, 120, 'nm', 5],[259.0, 22.9, 'nm', 5],[249.0, 302, 'nm', 5],[110.0, 37, '%', 2],[63.0, 1, '%', 1],[51.0, 200, 'K', 1]

F
###Conductance fingerprints of non-collinear magnetic states in single atom contacts: a first-principles Wannier functions study|Björn Hardrat,Frank Freimuth,Stefan Heinze,Yuriy Mokrousov###
(1293835, 1293835)
 The electronic structure is obtained withindensity functional theory as implemented in the full-potential linearizedaugmented plane-wave (FL<missing VAR>APW) method and mapped to a tight-binding liketransport Hamiltonian via non-collinear Wannier functions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 2.5, 'to', 3]

W
###Conductance fingerprints of non-collinear magnetic states in single atom contacts: a first-principles Wannier functions study|Björn Hardrat,Frank Freimuth,Stefan Heinze,Yuriy Mokrousov###
(1293839, 1293839)
 The electronic structure is obtained withindensity functional theory as implemented in the full-potential linearizedaugmented plane-wave (FL<missing VAR>APW) method and mapped to a tight-binding liketransport Hamiltonian via non-collinear Wannier functions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 2.5, 'to', 3]

As
###Conductance fingerprints of non-collinear magnetic states in single atom contacts: a first-principles Wannier functions study|Björn Hardrat,Frank Freimuth,Stefan Heinze,Yuriy Mokrousov###
(1293908, 1293908)
As a first application we study the conductance between two ferromagnetic Comonowires terminated by single Mn apex atoms as a function of Mn-Mn separation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 2.5, 'to', 1]

Co
###Conductance fingerprints of non-collinear magnetic states in single atom contacts: a first-principles Wannier functions study|Björn Hardrat,Frank Freimuth,Stefan Heinze,Yuriy Mokrousov###
(1293930, 1293930)
As a first application we study the conductance between two ferromagnetic Comonowires terminated by single Mn apex atoms as a function of Mn-Mn separation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 2.5, 'to', 1]

Mn
###Conductance fingerprints of non-collinear magnetic states in single atom contacts: a first-principles Wannier functions study|Björn Hardrat,Frank Freimuth,Stefan Heinze,Yuriy Mokrousov###
(1293941, 1293941)
As a first application we study the conductance between two ferromagnetic Comonowires terminated by single Mn apex atoms as a function of Mn-Mn separation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 2.5, 'to', 1]

Mn
###Conductance fingerprints of non-collinear magnetic states in single atom contacts: a first-principles Wannier functions study|Björn Hardrat,Frank Freimuth,Stefan Heinze,Yuriy Mokrousov###
(1293955, 1293955)
As a first application we study the conductance between two ferromagnetic Comonowires terminated by single Mn apex atoms as a function of Mn-Mn separation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 2.5, 'to', 1]

Mn
###Conductance fingerprints of non-collinear magnetic states in single atom contacts: a first-principles Wannier functions study|Björn Hardrat,Frank Freimuth,Stefan Heinze,Yuriy Mokrousov###
(1293957, 1293957)
As a first application we study the conductance between two ferromagnetic Comonowires terminated by single Mn apex atoms as a function of Mn-Mn separation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 2.5, 'to', 1]

Mn
###Conductance fingerprints of non-collinear magnetic states in single atom contacts: a first-principles Wannier functions study|Björn Hardrat,Frank Freimuth,Stefan Heinze,Yuriy Mokrousov###
(1293969, 1293969)
We vary the Mn-Mn separation from the contact (about 2.5 to 5 AA) to the fartunneling regime (5 to 10 AA).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 2.5, 'to', 0]

Mn
###Conductance fingerprints of non-collinear magnetic states in single atom contacts: a first-principles Wannier functions study|Björn Hardrat,Frank Freimuth,Stefan Heinze,Yuriy Mokrousov###
(1293971, 1293971)
We vary the Mn-Mn separation from the contact (about 2.5 to 5 AA) to the fartunneling regime (5 to 10 AA).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 2.5, 'to', 0]

Co
###Conductance fingerprints of non-collinear magnetic states in single atom contacts: a first-principles Wannier functions study|Björn Hardrat,Frank Freimuth,Stefan Heinze,Yuriy Mokrousov###
(1294024, 1294024)
 The magnetization direction of the Coelectrodes is chosen either in parallel or antiparallel alignment and we allowfor different spin configurations of the two Mn spins.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 2.5, 'to', 1]

Mn
###Conductance fingerprints of non-collinear magnetic states in single atom contacts: a first-principles Wannier functions study|Björn Hardrat,Frank Freimuth,Stefan Heinze,Yuriy Mokrousov###
(1294066, 1294066)
 The magnetization direction of the Coelectrodes is chosen either in parallel or antiparallel alignment and we allowfor different spin configurations of the two Mn spins.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 2.5, 'to', 1]

In
###Conductance fingerprints of non-collinear magnetic states in single atom contacts: a first-principles Wannier functions study|Björn Hardrat,Frank Freimuth,Stefan Heinze,Yuriy Mokrousov###
(1294071, 1294071)
 In the tunneling andinto the contact regime the conductance is dominated by s-dz2-states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 2.5, 'to', 2]

In
###Conductance fingerprints of non-collinear magnetic states in single atom contacts: a first-principles Wannier functions study|Björn Hardrat,Frank Freimuth,Stefan Heinze,Yuriy Mokrousov###
(1294108, 1294108)
In the close contact regime (below 3.5 AA) there is an additionalcontribution for a parallel magnetization alignment from the d<missing VAR>xz- andd<missing VAR>yz-states which give rise to an increase of the magnetoresistance as itis absent for antiparallel magnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 2.5, 'to', 3]

Mn
###Conductance fingerprints of non-collinear magnetic states in single atom contacts: a first-principles Wannier functions study|Björn Hardrat,Frank Freimuth,Stefan Heinze,Yuriy Mokrousov###
(1294206, 1294206)
 If we allow the Mn spins to relax anon-collinear spin state is formed close to contact.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[223.0, 2.5, 'to', 4]

Mn
###Conductance fingerprints of non-collinear magnetic states in single atom contacts: a first-principles Wannier functions study|Björn Hardrat,Frank Freimuth,Stefan Heinze,Yuriy Mokrousov###
(1294274, 1294274)
 We demonstrate that thetransition from a collinear to such a non-collinear spin structure as the twoMn atoms approach leaves a characteristic fingerprint in the distance-dependentconductance and magnetoresistance of the junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[291.0, 2.5, 'to', 5]

Mn
###Conductance fingerprints of non-collinear magnetic states in single atom contacts: a first-principles Wannier functions study|Björn Hardrat,Frank Freimuth,Stefan Heinze,Yuriy Mokrousov###
(1294365, 1294365)
 We explain the effect of thenon-collinear spin state on the conductance based on the spin-dependenthybridization between the d<missing VAR>xz,yz-states of the Mn spins and their couplingto the Co electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[382.0, 2.5, 'to', 6]

Co
###Conductance fingerprints of non-collinear magnetic states in single atom contacts: a first-principles Wannier functions study|Björn Hardrat,Frank Freimuth,Stefan Heinze,Yuriy Mokrousov###
(1294380, 1294380)
 We explain the effect of thenon-collinear spin state on the conductance based on the spin-dependenthybridization between the d<missing VAR>xz,yz-states of the Mn spins and their couplingto the Co electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[397.0, 2.5, 'to', 6]

O
###Magnetic anisotropy in strained manganite films and bicrystal junctions|G. A. Ovsyannikov,V. V. Demidov,A. M. Petrzhik,I. V. Borisenko,A. V. Shadrin,R. Gunnarsson###
(1294425, 1294425)
 Transport and magnetic properties of LSMO manganite thin films and bicrystaljunctions were investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 0.3, 'persentage', 2],[287.0, 0, 'to', 4],[288.0, 25, 'degrees', 4]

S
###Magnetic anisotropy in strained manganite films and bicrystal junctions|G. A. Ovsyannikov,V. V. Demidov,A. M. Petrzhik,I. V. Borisenko,A. V. Shadrin,R. Gunnarsson###
(1294457, 1294457)
 Manganite films were epitaxially grown on ST<missing VAR>O,L<missing VAR>AO, NG<missing VAR>O and L<missing VAR>SAT<missing VAR> substrates and their magnetic anisotropy were determined bytwo techniques of magnetic resonance spectroscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 0.3, 'persentage', 1],[255.0, 0, 'to', 3],[256.0, 25, 'degrees', 3]

O
###Magnetic anisotropy in strained manganite films and bicrystal junctions|G. A. Ovsyannikov,V. V. Demidov,A. M. Petrzhik,I. V. Borisenko,A. V. Shadrin,R. Gunnarsson###
(1294459, 1294459)
 Manganite films were epitaxially grown on ST<missing VAR>O,L<missing VAR>AO, NG<missing VAR>O and L<missing VAR>SAT<missing VAR> substrates and their magnetic anisotropy were determined bytwo techniques of magnetic resonance spectroscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 0.3, 'persentage', 1],[253.0, 0, 'to', 3],[254.0, 25, 'degrees', 3]

O
###Magnetic anisotropy in strained manganite films and bicrystal junctions|G. A. Ovsyannikov,V. V. Demidov,A. M. Petrzhik,I. V. Borisenko,A. V. Shadrin,R. Gunnarsson###
(1294465, 1294465)
 Manganite films were epitaxially grown on ST<missing VAR>O,L<missing VAR>AO, NG<missing VAR>O and L<missing VAR>SAT<missing VAR> substrates and their magnetic anisotropy were determined bytwo techniques of magnetic resonance spectroscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 0.3, 'persentage', 1],[247.0, 0, 'to', 3],[248.0, 25, 'degrees', 3]

N
###Magnetic anisotropy in strained manganite films and bicrystal junctions|G. A. Ovsyannikov,V. V. Demidov,A. M. Petrzhik,I. V. Borisenko,A. V. Shadrin,R. Gunnarsson###
(1294468, 1294468)
 Manganite films were epitaxially grown on ST<missing VAR>O,L<missing VAR>AO, NG<missing VAR>O and L<missing VAR>SAT<missing VAR> substrates and their magnetic anisotropy were determined bytwo techniques of magnetic resonance spectroscopy.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 0.3, 'persentage', 1],[244.0, 0, 'to', 3],[245.0, 25, 'degrees', 3]

O
###Magnetic anisotropy in strained manganite films and bicrystal junctions|G. A. Ovsyannikov,V. V. Demidov,A. M. Petrzhik,I. V. Borisenko,A. V. Shadrin,R. Gunnarsson###
(1294470, 1294470)
 Manganite films were epitaxially grown on ST<missing VAR>O,L<missing VAR>AO, NG<missing VAR>O and L<missing VAR>SAT<missing VAR> substrates and their magnetic anisotropy were determined bytwo techniques of magnetic resonance spectroscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 0.3, 'persentage', 1],[242.0, 0, 'to', 3],[243.0, 25, 'degrees', 3]

S
###Magnetic anisotropy in strained manganite films and bicrystal junctions|G. A. Ovsyannikov,V. V. Demidov,A. M. Petrzhik,I. V. Borisenko,A. V. Shadrin,R. Gunnarsson###
(1294475, 1294475)
 Manganite films were epitaxially grown on ST<missing VAR>O,L<missing VAR>AO, NG<missing VAR>O and L<missing VAR>SAT<missing VAR> substrates and their magnetic anisotropy were determined bytwo techniques of magnetic resonance spectroscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 0.3, 'persentage', 1],[237.0, 0, 'to', 3],[238.0, 25, 'degrees', 3]

N
###Magnetic anisotropy in strained manganite films and bicrystal junctions|G. A. Ovsyannikov,V. V. Demidov,A. M. Petrzhik,I. V. Borisenko,A. V. Shadrin,R. Gunnarsson###
(1294539, 1294539)
 Compare with cubicsubstrates a small (about 0.3 persentage), the anisotropy of the orthorhombicNG<missing VAR>O substrate leads to a uniaxial anisotropy of the magnetic properties of thefilms in the plane of the substrate.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 0.3, 'persentage', 0],[173.0, 0, 'to', 2],[174.0, 25, 'degrees', 2]

O
###Magnetic anisotropy in strained manganite films and bicrystal junctions|G. A. Ovsyannikov,V. V. Demidov,A. M. Petrzhik,I. V. Borisenko,A. V. Shadrin,R. Gunnarsson###
(1294541, 1294541)
 Compare with cubicsubstrates a small (about 0.3 persentage), the anisotropy of the orthorhombicNG<missing VAR>O substrate leads to a uniaxial anisotropy of the magnetic properties of thefilms in the plane of the substrate.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 0.3, 'persentage', 0],[171.0, 0, 'to', 2],[172.0, 25, 'degrees', 2]

B
###Magnetic anisotropy in strained manganite films and bicrystal junctions|G. A. Ovsyannikov,V. V. Demidov,A. M. Petrzhik,I. V. Borisenko,A. V. Shadrin,R. Gunnarsson###
(1294629, 1294629)
 Samples with different tilt ofcrystallographic basal planes of manganite as well as bicrystal junctions withrotation of the crystallographic axes (R<missing VAR>B - junction) and with tilting of basalplanes (T<missing VAR>B - junction) were investigated.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 0.3, 'persentage', 1],[83.0, 0, 'to', 1],[84.0, 25, 'degrees', 1]

B
###Magnetic anisotropy in strained manganite films and bicrystal junctions|G. A. Ovsyannikov,V. V. Demidov,A. M. Petrzhik,I. V. Borisenko,A. V. Shadrin,R. Gunnarsson###
(1294651, 1294651)
 Samples with different tilt ofcrystallographic basal planes of manganite as well as bicrystal junctions withrotation of the crystallographic axes (R<missing VAR>B - junction) and with tilting of basalplanes (T<missing VAR>B - junction) were investigated.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 0.3, 'persentage', 1],[61.0, 0, 'to', 1],[62.0, 25, 'degrees', 1]

N
###Magnetic anisotropy in strained manganite films and bicrystal junctions|G. A. Ovsyannikov,V. V. Demidov,A. M. Petrzhik,I. V. Borisenko,A. V. Shadrin,R. Gunnarsson###
(1294675, 1294675)
 It was found that on vicinal NG<missing VAR>Osubstrates the value of magnetic anisotropy could be varied by changing thesubstrate inclination angle from 0 to 25 degrees.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 0.3, 'persentage', 2],[37.0, 0, 'to', 0],[38.0, 25, 'degrees', 0]

O
###Magnetic anisotropy in strained manganite films and bicrystal junctions|G. A. Ovsyannikov,V. V. Demidov,A. M. Petrzhik,I. V. Borisenko,A. V. Shadrin,R. Gunnarsson###
(1294677, 1294677)
 It was found that on vicinal NG<missing VAR>Osubstrates the value of magnetic anisotropy could be varied by changing thesubstrate inclination angle from 0 to 25 degrees.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 0.3, 'persentage', 2],[35.0, 0, 'to', 0],[36.0, 25, 'degrees', 0]

B
###Magnetic anisotropy in strained manganite films and bicrystal junctions|G. A. Ovsyannikov,V. V. Demidov,A. M. Petrzhik,I. V. Borisenko,A. V. Shadrin,R. Gunnarsson###
(1294766, 1294766)
 Measurement of magneticanisotropy of manganite bicrystal junction demonstrated the presence of twoferromagnetically ordered spin subsystems for both types of bicrystalboundaries R<missing VAR>B and T<missing VAR>B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[242.0, 0.3, 'persentage', 3],[54.0, 0, 'to', 1],[53.0, 25, 'degrees', 1]

B
###Magnetic anisotropy in strained manganite films and bicrystal junctions|G. A. Ovsyannikov,V. V. Demidov,A. M. Petrzhik,I. V. Borisenko,A. V. Shadrin,R. Gunnarsson###
(1294771, 1294771)
 Measurement of magneticanisotropy of manganite bicrystal junction demonstrated the presence of twoferromagnetically ordered spin subsystems for both types of bicrystalboundaries R<missing VAR>B and T<missing VAR>B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[247.0, 0.3, 'persentage', 3],[59.0, 0, 'to', 1],[58.0, 25, 'degrees', 1]

B
###Magnetic anisotropy in strained manganite films and bicrystal junctions|G. A. Ovsyannikov,V. V. Demidov,A. M. Petrzhik,I. V. Borisenko,A. V. Shadrin,R. Gunnarsson###
(1294787, 1294787)
 The magnitude of the magnetoresistance for T<missing VAR>B - junctionsincreased with decreasing temperature and with the misorientation angle evenmisorientation of easy axes in the parts of junction does not change.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[263.0, 0.3, 'persentage', 4],[75.0, 0, 'to', 2],[74.0, 25, 'degrees', 2]

O
###Magnetic anisotropy in strained manganite films and bicrystal junctions|G. A. Ovsyannikov,V. V. Demidov,A. M. Petrzhik,I. V. Borisenko,A. V. Shadrin,R. Gunnarsson###
(1294883, 1294883)
 Analysisof the voltage dependencies of bicrystal junction conductivity show that thelow value of the magnetoresistance for the LSMO bicrystal junctions can becaused by two scattering mechanisms with the spin- flip of spin - polarizedcarriers due to the strong electron - electron interactions in a disorderedlayer at the bicrystal boundary at low temperatures and the spin-flip by antiferromagnetic magnons at high temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[359.0, 0.3, 'persentage', 5],[171.0, 0, 'to', 3],[170.0, 25, 'degrees', 3]

Sc
###Review on magnetic and related properties of RTX compounds|Sachin Gupta,K. G. Suresh###
(1295045, 1295045)
 RTX (R<missing VAR>rare earths, T<missing VAR> 3d/4d<missing VAR>/5d<missing VAR>, transition metals such as Sc, Ti, Mn, Fe,Co, Ni, Cu, Ru, Rh, Pd, Ag, Os, Ir, Pt, Au, and Xp-block elements such as Al,Ga, In, Si, Ge, Sn, As, Sb, Bi) series is a huge family of intermetallicscompounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 3, 'd', 0]

Ti
###Review on magnetic and related properties of RTX compounds|Sachin Gupta,K. G. Suresh###
(1295048, 1295048)
 RTX (R<missing VAR>rare earths, T<missing VAR> 3d/4d<missing VAR>/5d<missing VAR>, transition metals such as Sc, Ti, Mn, Fe,Co, Ni, Cu, Ru, Rh, Pd, Ag, Os, Ir, Pt, Au, and Xp-block elements such as Al,Ga, In, Si, Ge, Sn, As, Sb, Bi) series is a huge family of intermetallicscompounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 3, 'd', 0]

Mn
###Review on magnetic and related properties of RTX compounds|Sachin Gupta,K. G. Suresh###
(1295051, 1295051)
 RTX (R<missing VAR>rare earths, T<missing VAR> 3d/4d<missing VAR>/5d<missing VAR>, transition metals such as Sc, Ti, Mn, Fe,Co, Ni, Cu, Ru, Rh, Pd, Ag, Os, Ir, Pt, Au, and Xp-block elements such as Al,Ga, In, Si, Ge, Sn, As, Sb, Bi) series is a huge family of intermetallicscompounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 3, 'd', 0]

Fe
###Review on magnetic and related properties of RTX compounds|Sachin Gupta,K. G. Suresh###
(1295054, 1295054)
 RTX (R<missing VAR>rare earths, T<missing VAR> 3d/4d<missing VAR>/5d<missing VAR>, transition metals such as Sc, Ti, Mn, Fe,Co, Ni, Cu, Ru, Rh, Pd, Ag, Os, Ir, Pt, Au, and Xp-block elements such as Al,Ga, In, Si, Ge, Sn, As, Sb, Bi) series is a huge family of intermetallicscompounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 3, 'd', 0]

Co
###Review on magnetic and related properties of RTX compounds|Sachin Gupta,K. G. Suresh###
(1295058, 1295058)
 RTX (R<missing VAR>rare earths, T<missing VAR> 3d/4d<missing VAR>/5d<missing VAR>, transition metals such as Sc, Ti, Mn, Fe,Co, Ni, Cu, Ru, Rh, Pd, Ag, Os, Ir, Pt, Au, and Xp-block elements such as Al,Ga, In, Si, Ge, Sn, As, Sb, Bi) series is a huge family of intermetallicscompounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 3, 'd', 0]

Ni
###Review on magnetic and related properties of RTX compounds|Sachin Gupta,K. G. Suresh###
(1295061, 1295061)
 RTX (R<missing VAR>rare earths, T<missing VAR> 3d/4d<missing VAR>/5d<missing VAR>, transition metals such as Sc, Ti, Mn, Fe,Co, Ni, Cu, Ru, Rh, Pd, Ag, Os, Ir, Pt, Au, and Xp-block elements such as Al,Ga, In, Si, Ge, Sn, As, Sb, Bi) series is a huge family of intermetallicscompounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 3, 'd', 0]

Cu
###Review on magnetic and related properties of RTX compounds|Sachin Gupta,K. G. Suresh###
(1295064, 1295064)
 RTX (R<missing VAR>rare earths, T<missing VAR> 3d/4d<missing VAR>/5d<missing VAR>, transition metals such as Sc, Ti, Mn, Fe,Co, Ni, Cu, Ru, Rh, Pd, Ag, Os, Ir, Pt, Au, and Xp-block elements such as Al,Ga, In, Si, Ge, Sn, As, Sb, Bi) series is a huge family of intermetallicscompounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 3, 'd', 0]

Ru
###Review on magnetic and related properties of RTX compounds|Sachin Gupta,K. G. Suresh###
(1295067, 1295067)
 RTX (R<missing VAR>rare earths, T<missing VAR> 3d/4d<missing VAR>/5d<missing VAR>, transition metals such as Sc, Ti, Mn, Fe,Co, Ni, Cu, Ru, Rh, Pd, Ag, Os, Ir, Pt, Au, and Xp-block elements such as Al,Ga, In, Si, Ge, Sn, As, Sb, Bi) series is a huge family of intermetallicscompounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 3, 'd', 0]

Rh
###Review on magnetic and related properties of RTX compounds|Sachin Gupta,K. G. Suresh###
(1295070, 1295070)
 RTX (R<missing VAR>rare earths, T<missing VAR> 3d/4d<missing VAR>/5d<missing VAR>, transition metals such as Sc, Ti, Mn, Fe,Co, Ni, Cu, Ru, Rh, Pd, Ag, Os, Ir, Pt, Au, and Xp-block elements such as Al,Ga, In, Si, Ge, Sn, As, Sb, Bi) series is a huge family of intermetallicscompounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 3, 'd', 0]

Pd
###Review on magnetic and related properties of RTX compounds|Sachin Gupta,K. G. Suresh###
(1295073, 1295073)
 RTX (R<missing VAR>rare earths, T<missing VAR> 3d/4d<missing VAR>/5d<missing VAR>, transition metals such as Sc, Ti, Mn, Fe,Co, Ni, Cu, Ru, Rh, Pd, Ag, Os, Ir, Pt, Au, and Xp-block elements such as Al,Ga, In, Si, Ge, Sn, As, Sb, Bi) series is a huge family of intermetallicscompounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 3, 'd', 0]

Ag
###Review on magnetic and related properties of RTX compounds|Sachin Gupta,K. G. Suresh###
(1295076, 1295076)
 RTX (R<missing VAR>rare earths, T<missing VAR> 3d/4d<missing VAR>/5d<missing VAR>, transition metals such as Sc, Ti, Mn, Fe,Co, Ni, Cu, Ru, Rh, Pd, Ag, Os, Ir, Pt, Au, and Xp-block elements such as Al,Ga, In, Si, Ge, Sn, As, Sb, Bi) series is a huge family of intermetallicscompounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 3, 'd', 0]

Os
###Review on magnetic and related properties of RTX compounds|Sachin Gupta,K. G. Suresh###
(1295079, 1295079)
 RTX (R<missing VAR>rare earths, T<missing VAR> 3d/4d<missing VAR>/5d<missing VAR>, transition metals such as Sc, Ti, Mn, Fe,Co, Ni, Cu, Ru, Rh, Pd, Ag, Os, Ir, Pt, Au, and Xp-block elements such as Al,Ga, In, Si, Ge, Sn, As, Sb, Bi) series is a huge family of intermetallicscompounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 3, 'd', 0]

Ir
###Review on magnetic and related properties of RTX compounds|Sachin Gupta,K. G. Suresh###
(1295082, 1295082)
 RTX (R<missing VAR>rare earths, T<missing VAR> 3d/4d<missing VAR>/5d<missing VAR>, transition metals such as Sc, Ti, Mn, Fe,Co, Ni, Cu, Ru, Rh, Pd, Ag, Os, Ir, Pt, Au, and Xp-block elements such as Al,Ga, In, Si, Ge, Sn, As, Sb, Bi) series is a huge family of intermetallicscompounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 3, 'd', 0]

Pt
###Review on magnetic and related properties of RTX compounds|Sachin Gupta,K. G. Suresh###
(1295085, 1295085)
 RTX (R<missing VAR>rare earths, T<missing VAR> 3d/4d<missing VAR>/5d<missing VAR>, transition metals such as Sc, Ti, Mn, Fe,Co, Ni, Cu, Ru, Rh, Pd, Ag, Os, Ir, Pt, Au, and Xp-block elements such as Al,Ga, In, Si, Ge, Sn, As, Sb, Bi) series is a huge family of intermetallicscompounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 3, 'd', 0]

Au
###Review on magnetic and related properties of RTX compounds|Sachin Gupta,K. G. Suresh###
(1295088, 1295088)
 RTX (R<missing VAR>rare earths, T<missing VAR> 3d/4d<missing VAR>/5d<missing VAR>, transition metals such as Sc, Ti, Mn, Fe,Co, Ni, Cu, Ru, Rh, Pd, Ag, Os, Ir, Pt, Au, and Xp-block elements such as Al,Ga, In, Si, Ge, Sn, As, Sb, Bi) series is a huge family of intermetallicscompounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 3, 'd', 0]

Al
###Review on magnetic and related properties of RTX compounds|Sachin Gupta,K. G. Suresh###
(1295104, 1295104)
 RTX (R<missing VAR>rare earths, T<missing VAR> 3d/4d<missing VAR>/5d<missing VAR>, transition metals such as Sc, Ti, Mn, Fe,Co, Ni, Cu, Ru, Rh, Pd, Ag, Os, Ir, Pt, Au, and Xp-block elements such as Al,Ga, In, Si, Ge, Sn, As, Sb, Bi) series is a huge family of intermetallicscompounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 3, 'd', 0]

Ga
###Review on magnetic and related properties of RTX compounds|Sachin Gupta,K. G. Suresh###
(1295108, 1295108)
 RTX (R<missing VAR>rare earths, T<missing VAR> 3d/4d<missing VAR>/5d<missing VAR>, transition metals such as Sc, Ti, Mn, Fe,Co, Ni, Cu, Ru, Rh, Pd, Ag, Os, Ir, Pt, Au, and Xp-block elements such as Al,Ga, In, Si, Ge, Sn, As, Sb, Bi) series is a huge family of intermetallicscompounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 3, 'd', 0]

In
###Review on magnetic and related properties of RTX compounds|Sachin Gupta,K. G. Suresh###
(1295111, 1295111)
 RTX (R<missing VAR>rare earths, T<missing VAR> 3d/4d<missing VAR>/5d<missing VAR>, transition metals such as Sc, Ti, Mn, Fe,Co, Ni, Cu, Ru, Rh, Pd, Ag, Os, Ir, Pt, Au, and Xp-block elements such as Al,Ga, In, Si, Ge, Sn, As, Sb, Bi) series is a huge family of intermetallicscompounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 3, 'd', 0]

Si
###Review on magnetic and related properties of RTX compounds|Sachin Gupta,K. G. Suresh###
(1295114, 1295114)
 RTX (R<missing VAR>rare earths, T<missing VAR> 3d/4d<missing VAR>/5d<missing VAR>, transition metals such as Sc, Ti, Mn, Fe,Co, Ni, Cu, Ru, Rh, Pd, Ag, Os, Ir, Pt, Au, and Xp-block elements such as Al,Ga, In, Si, Ge, Sn, As, Sb, Bi) series is a huge family of intermetallicscompounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 3, 'd', 0]

Ge
###Review on magnetic and related properties of RTX compounds|Sachin Gupta,K. G. Suresh###
(1295117, 1295117)
 RTX (R<missing VAR>rare earths, T<missing VAR> 3d/4d<missing VAR>/5d<missing VAR>, transition metals such as Sc, Ti, Mn, Fe,Co, Ni, Cu, Ru, Rh, Pd, Ag, Os, Ir, Pt, Au, and Xp-block elements such as Al,Ga, In, Si, Ge, Sn, As, Sb, Bi) series is a huge family of intermetallicscompounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 3, 'd', 0]

Sn
###Review on magnetic and related properties of RTX compounds|Sachin Gupta,K. G. Suresh###
(1295120, 1295120)
 RTX (R<missing VAR>rare earths, T<missing VAR> 3d/4d<missing VAR>/5d<missing VAR>, transition metals such as Sc, Ti, Mn, Fe,Co, Ni, Cu, Ru, Rh, Pd, Ag, Os, Ir, Pt, Au, and Xp-block elements such as Al,Ga, In, Si, Ge, Sn, As, Sb, Bi) series is a huge family of intermetallicscompounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 3, 'd', 0]

As
###Review on magnetic and related properties of RTX compounds|Sachin Gupta,K. G. Suresh###
(1295123, 1295123)
 RTX (R<missing VAR>rare earths, T<missing VAR> 3d/4d<missing VAR>/5d<missing VAR>, transition metals such as Sc, Ti, Mn, Fe,Co, Ni, Cu, Ru, Rh, Pd, Ag, Os, Ir, Pt, Au, and Xp-block elements such as Al,Ga, In, Si, Ge, Sn, As, Sb, Bi) series is a huge family of intermetallicscompounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 3, 'd', 0]

Sb
###Review on magnetic and related properties of RTX compounds|Sachin Gupta,K. G. Suresh###
(1295126, 1295126)
 RTX (R<missing VAR>rare earths, T<missing VAR> 3d/4d<missing VAR>/5d<missing VAR>, transition metals such as Sc, Ti, Mn, Fe,Co, Ni, Cu, Ru, Rh, Pd, Ag, Os, Ir, Pt, Au, and Xp-block elements such as Al,Ga, In, Si, Ge, Sn, As, Sb, Bi) series is a huge family of intermetallicscompounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 3, 'd', 0]

Bi
###Review on magnetic and related properties of RTX compounds|Sachin Gupta,K. G. Suresh###
(1295129, 1295129)
 RTX (R<missing VAR>rare earths, T<missing VAR> 3d/4d<missing VAR>/5d<missing VAR>, transition metals such as Sc, Ti, Mn, Fe,Co, Ni, Cu, Ru, Rh, Pd, Ag, Os, Ir, Pt, Au, and Xp-block elements such as Al,Ga, In, Si, Ge, Sn, As, Sb, Bi) series is a huge family of intermetallicscompounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 3, 'd', 0]

K
###Review on magnetic and related properties of RTX compounds|Sachin Gupta,K. G. Suresh###
(1295356, 1295356)
 Theirmagnetic ordering temperatures vary from very low temperatures to temperatureswell above room temperature (510 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[328.0, 3, 'd', 5]

PS
###Review on magnetic and related properties of RTX compounds|Sachin Gupta,K. G. Suresh###
(1295481, 1295482)
 These compounds have beencharacterized by means of a variety of techniques/measurements such as x<missing VAR>-raydiffraction, neutron diffraction, magnetic properties, heat capacity,magnetocaloric properties, electrical resistivity, magnetoresistance,thermoelectric power, thermal expansion, Hall effect, optical properties, X<missing VAR>PS,M<missing VAR>ossbauer spectroscopy, ESR, muSR<missing VAR>, NMR, NQR etc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[453.0, 3, 'd', 7]

S
###Review on magnetic and related properties of RTX compounds|Sachin Gupta,K. G. Suresh###
(1295498, 1295498)
 These compounds have beencharacterized by means of a variety of techniques/measurements such as x<missing VAR>-raydiffraction, neutron diffraction, magnetic properties, heat capacity,magnetocaloric properties, electrical resistivity, magnetoresistance,thermoelectric power, thermal expansion, Hall effect, optical properties, X<missing VAR>PS,M<missing VAR>ossbauer spectroscopy, ESR, muSR<missing VAR>, NMR, NQR etc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[470.0, 3, 'd', 7]

N
###Review on magnetic and related properties of RTX compounds|Sachin Gupta,K. G. Suresh###
(1295502, 1295502)
 These compounds have beencharacterized by means of a variety of techniques/measurements such as x<missing VAR>-raydiffraction, neutron diffraction, magnetic properties, heat capacity,magnetocaloric properties, electrical resistivity, magnetoresistance,thermoelectric power, thermal expansion, Hall effect, optical properties, X<missing VAR>PS,M<missing VAR>ossbauer spectroscopy, ESR, muSR<missing VAR>, NMR, NQR etc.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[474.0, 3, 'd', 7]

N
###Review on magnetic and related properties of RTX compounds|Sachin Gupta,K. G. Suresh###
(1295507, 1295507)
 These compounds have beencharacterized by means of a variety of techniques/measurements such as x<missing VAR>-raydiffraction, neutron diffraction, magnetic properties, heat capacity,magnetocaloric properties, electrical resistivity, magnetoresistance,thermoelectric power, thermal expansion, Hall effect, optical properties, X<missing VAR>PS,M<missing VAR>ossbauer spectroscopy, ESR, muSR<missing VAR>, NMR, NQR etc.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[479.0, 3, 'd', 7]

SmB6
###Magnetotransport Measurements of the Surface States of Samarium Hexaboride using Corbino Structures|Steven Wolgast,Yun Suk Eo,Teoman Ozturk,Gang Li,Ziji Xiang,Colin Tinsman,Tomoya Asaba,Ben Lawson,Fan Yu,J. W. Allen,Kai Sun,Lu Li,Cagliyan Kurdak,Dae-Jeong Kim,Zachary Fisk###
(1295733, 1295735)
 The recent conjecture of a topologically-protected surface state in SmB6and the verification of robust surface conduction below 4 K have prompted alarge effort to understand the surface states.
Featurization terminated normally.
0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 4, 'K', 0],[246.0, -2, ',', 4]

SmB6
###Magnetotransport Measurements of the Surface States of Samarium Hexaboride using Corbino Structures|Steven Wolgast,Yun Suk Eo,Teoman Ozturk,Gang Li,Ziji Xiang,Colin Tinsman,Tomoya Asaba,Ben Lawson,Fan Yu,J. W. Allen,Kai Sun,Lu Li,Cagliyan Kurdak,Dae-Jeong Kim,Zachary Fisk###
(1295851, 1295853)
 Instead, we study magnetotransport of SmB6using a Corbino geometry, which can directly measure the conductivity of asingle, independent surface.
Featurization terminated normally.
0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 4, 'K', 2],[128.0, -2, ',', 2]

V
###Magnetotransport Measurements of the Surface States of Samarium Hexaboride using Corbino Structures|Steven Wolgast,Yun Suk Eo,Teoman Ozturk,Gang Li,Ziji Xiang,Colin Tinsman,Tomoya Asaba,Ben Lawson,Fan Yu,J. W. Allen,Kai Sun,Lu Li,Cagliyan Kurdak,Dae-Jeong Kim,Zachary Fisk###
(1295957, 1295957)
 The(011) surface has a carrier mobility of 122textcm2/textVcdottextsec with a carrier density of 2.5times1013text cm-2, which are significantly smaller than indicated by Halltransport studies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[204.0, 4, 'K', 4],[24.0, -2, ',', 0]

S
###Ambipolar High Mobility Hexagonal Transistors on Hydrogen-Terminated Silicon (111) Surfaces|Binhui Hu,Mohamad M. Yazdanpanah,Joyce E. Coppock,B. E. Kane###
(1296388, 1296388)
 We have fabricated ambipolar transistors on chemically preparedhydrogen-terminated Si(111) surfaces, in which a two-dimensional electronsystem (2DES) or a two-dimensional hole system (2D<missing VAR>HS) can be populated in thesame conduction channel by changing the gate voltage of a global gate appliedthrough a vacuum gap.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[232.0, 300, 'mK', 3],[242.0, 20, 'is', 3],[320.0, 300, 'mK', 4],[349.0, 2, 'DESs', 5],[404.0, 2, 'DESs', 6],[430.0, 2, ',', 7],[512.0, 35, 'T', 9],[554.0, 3, ',', 9]

S
###Ambipolar High Mobility Hexagonal Transistors on Hydrogen-Terminated Silicon (111) Surfaces|Binhui Hu,Mohamad M. Yazdanpanah,Joyce E. Coppock,B. E. Kane###
(1296407, 1296407)
 We have fabricated ambipolar transistors on chemically preparedhydrogen-terminated Si(111) surfaces, in which a two-dimensional electronsystem (2DES) or a two-dimensional hole system (2D<missing VAR>HS) can be populated in thesame conduction channel by changing the gate voltage of a global gate appliedthrough a vacuum gap.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[213.0, 300, 'mK', 3],[223.0, 20, 'is', 3],[301.0, 300, 'mK', 4],[330.0, 2, 'DESs', 5],[385.0, 2, 'DESs', 6],[411.0, 2, ',', 7],[493.0, 35, 'T', 9],[535.0, 3, ',', 9]

At
###Ambipolar High Mobility Hexagonal Transistors on Hydrogen-Terminated Silicon (111) Surfaces|Binhui Hu,Mohamad M. Yazdanpanah,Joyce E. Coppock,B. E. Kane###
(1296804, 1296804)
 At filling factor 1 < nu < 2, the observedanisotropy can be explained by a single valley pair occupancy of compositefermions (CFs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[184.0, 300, 'mK', 4],[174.0, 20, 'is', 4],[96.0, 300, 'mK', 3],[67.0, 2, 'DESs', 2],[12.0, 2, 'DESs', 1],[14.0, 2, ',', 0],[96.0, 35, 'T', 2],[138.0, 3, ',', 2]

C
###Ambipolar High Mobility Hexagonal Transistors on Hydrogen-Terminated Silicon (111) Surfaces|Binhui Hu,Mohamad M. Yazdanpanah,Joyce E. Coppock,B. E. Kane###
(1296854, 1296854)
 At filling factor 1 < nu < 2, the observedanisotropy can be explained by a single valley pair occupancy of compositefermions (CFs).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[234.0, 300, 'mK', 4],[224.0, 20, 'is', 4],[146.0, 300, 'mK', 3],[117.0, 2, 'DESs', 2],[62.0, 2, 'DESs', 1],[36.0, 2, ',', 0],[46.0, 35, 'T', 2],[88.0, 3, ',', 2]

C
###Ambipolar High Mobility Hexagonal Transistors on Hydrogen-Terminated Silicon (111) Surfaces|Binhui Hu,Mohamad M. Yazdanpanah,Joyce E. Coppock,B. E. Kane###
(1296863, 1296863)
 Qualitatively the CFs preserve the valley anisotropy, inaddition to the twofold valley degeneracy.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[243.0, 300, 'mK', 5],[233.0, 20, 'is', 5],[155.0, 300, 'mK', 4],[126.0, 2, 'DESs', 3],[71.0, 2, 'DESs', 2],[45.0, 2, ',', 1],[37.0, 35, 'T', 1],[79.0, 3, ',', 1]

At
###Ambipolar High Mobility Hexagonal Transistors on Hydrogen-Terminated Silicon (111) Surfaces|Binhui Hu,Mohamad M. Yazdanpanah,Joyce E. Coppock,B. E. Kane###
(1296891, 1296891)
 At magnetic field up to 35 T, the2/3 fractional quantum Hall state is observed with a well developed hallplateau; at nu<2/3, the three magnetoresistances show a large anisotropy(501).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[271.0, 300, 'mK', 6],[261.0, 20, 'is', 6],[183.0, 300, 'mK', 5],[154.0, 2, 'DESs', 4],[99.0, 2, 'DESs', 3],[73.0, 2, ',', 2],[9.0, 35, 'T', 0],[51.0, 3, ',', 0]

Dy3Ru4Al12
###Insight into the magnetism of a distorted Kagome lattice, Dy3Ru4Al12, based on polycrystalline studies|Venkatesh Chandragiri,Kartik K Iyer,E. V. Sampathkumaran###
(1297063, 1297068)
Insight into the magnetism of a distorted Kagome lattice, Dy3Ru4Al12, based on polycrystalline studies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.631578947368421,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.21052631578947367,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15789473684210525,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 7, 'K', 1],[169.0, 20, 'K', 3],[275.0, 4, 'd', 5],[477.0, 2, 'K', 9]

Dy3Ru4Al12
###Insight into the magnetism of a distorted Kagome lattice, Dy3Ru4Al12, based on polycrystalline studies|Venkatesh Chandragiri,Kartik K Iyer,E. V. Sampathkumaran###
(1297095, 1297100)
 The layered compound with distorted Kagome nets, Dy3Ru4Al12, was previouslyreported to undergo antiferromagnetic ordering below (T<missing VAR>N) 7 K, based oninvestigations on single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.631578947368421,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.21052631578947367,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15789473684210525,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 7, 'K', 0],[137.0, 20, 'K', 2],[243.0, 4, 'd', 4],[445.0, 2, 'K', 8]

N
###Insight into the magnetism of a distorted Kagome lattice, Dy3Ru4Al12, based on polycrystalline studies|Venkatesh Chandragiri,Kartik K Iyer,E. V. Sampathkumaran###
(1297122, 1297122)
 The layered compound with distorted Kagome nets, Dy3Ru4Al12, was previouslyreported to undergo antiferromagnetic ordering below (T<missing VAR>N) 7 K, based oninvestigations on single crystals.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 7, 'K', 0],[115.0, 20, 'K', 2],[221.0, 4, 'd', 4],[423.0, 2, 'K', 8]

N
###Insight into the magnetism of a distorted Kagome lattice, Dy3Ru4Al12, based on polycrystalline studies|Venkatesh Chandragiri,Kartik K Iyer,E. V. Sampathkumaran###
(1297246, 1297246)
 The present results reveal thatthere is an additional magnetic anomaly around 20 K, as though the Neel orderis preceded by the formation of ferromagnetic clusters.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 7, 'K', 2],[9.0, 20, 'K', 0],[97.0, 4, 'd', 2],[299.0, 2, 'K', 6]

In
###Insight into the magnetism of a distorted Kagome lattice, Dy3Ru4Al12, based on polycrystalline studies|Venkatesh Chandragiri,Kartik K Iyer,E. V. Sampathkumaran###
(1297289, 1297289)
 In view of the existence of thisphase, the interpretation of the linear-term in the heat-capacity in terms ofspin-fluctuations from the Ru 4d band needs to be revisited.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 7, 'K', 4],[52.0, 20, 'K', 2],[54.0, 4, 'd', 0],[256.0, 2, 'K', 4]

Ru
###Insight into the magnetism of a distorted Kagome lattice, Dy3Ru4Al12, based on polycrystalline studies|Venkatesh Chandragiri,Kartik K Iyer,E. V. Sampathkumaran###
(1297342, 1297342)
 In view of the existence of thisphase, the interpretation of the linear-term in the heat-capacity in terms ofspin-fluctuations from the Ru 4d band needs to be revisited.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[218.0, 7, 'K', 4],[105.0, 20, 'K', 2],[1.0, 4, 'd', 0],[203.0, 2, 'K', 4]

N
###Insight into the magnetism of a distorted Kagome lattice, Dy3Ru4Al12, based on polycrystalline studies|Venkatesh Chandragiri,Kartik K Iyer,E. V. Sampathkumaran###
(1297369, 1297369)
 Additionally, inthe vicinity of T<missing VAR>N, AC c<missing VAR>hi shows a prominent frequency dependence and, belowT<missing VAR>N, MIRM exhibits a slow decay with time.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[245.0, 7, 'K', 5],[132.0, 20, 'K', 3],[26.0, 4, 'd', 1],[176.0, 2, 'K', 3]

C
###Insight into the magnetism of a distorted Kagome lattice, Dy3Ru4Al12, based on polycrystalline studies|Venkatesh Chandragiri,Kartik K Iyer,E. V. Sampathkumaran###
(1297373, 1297373)
 Additionally, inthe vicinity of T<missing VAR>N, AC c<missing VAR>hi shows a prominent frequency dependence and, belowT<missing VAR>N, MIRM exhibits a slow decay with time.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[249.0, 7, 'K', 5],[136.0, 20, 'K', 3],[30.0, 4, 'd', 1],[172.0, 2, 'K', 3]

N
###Insight into the magnetism of a distorted Kagome lattice, Dy3Ru4Al12, based on polycrystalline studies|Venkatesh Chandragiri,Kartik K Iyer,E. V. Sampathkumaran###
(1297395, 1297395)
 Additionally, inthe vicinity of T<missing VAR>N, AC c<missing VAR>hi shows a prominent frequency dependence and, belowT<missing VAR>N, MIRM exhibits a slow decay with time.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[271.0, 7, 'K', 5],[158.0, 20, 'K', 3],[52.0, 4, 'd', 1],[150.0, 2, 'K', 3]

In
###Insight into the magnetism of a distorted Kagome lattice, Dy3Ru4Al12, based on polycrystalline studies|Venkatesh Chandragiri,Kartik K Iyer,E. V. Sampathkumaran###
(1297455, 1297455)
 In contrast to what was reported earlier, there is achange in the sign of the magnetoresistance (MR) at the metamagnetictransition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[331.0, 7, 'K', 7],[218.0, 20, 'K', 5],[112.0, 4, 'd', 3],[90.0, 2, 'K', 1]

Pr(2-x)
###Fermi Surface Reconstruction in the Electron-doped Cuprate Pr(2-x)CexCuO4|Yoram Dagan,Richard L. Greene###
(1297690, 1297695)
Fermi Surface Reconstruction in the Electron-doped Cuprate Pr(2-x)CexCuO4.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

CuO4
###Fermi Surface Reconstruction in the Electron-doped Cuprate Pr(2-x)CexCuO4|Yoram Dagan,Richard L. Greene###
(1297697, 1297699)
Fermi Surface Reconstruction in the Electron-doped Cuprate Pr(2-x)CexCuO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PCCO(PCCO)
###Fermi Surface Reconstruction in the Electron-doped Cuprate Pr(2-x)CexCuO4|Yoram Dagan,Richard L. Greene###
(1297737, 1297746)
 We report extensive resistivity, Hall, and magnetoresistance measurements onthin films of the electron-doped cuprate PCCO(PCCO), as a function of doping,temperature and magnetic field.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FS
###Fermi Surface Reconstruction in the Electron-doped Cuprate Pr(2-x)CexCuO4|Yoram Dagan,Richard L. Greene###
(1297827, 1297828)
 The doping dependence of the resistivity andHall number at low temperatures are characteristic of a system near a quantumphase transition or a Fermi Surface Reconstruction (FSR) point.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Fermi Surface Reconstruction in the Electron-doped Cuprate Pr(2-x)CexCuO4|Yoram Dagan,Richard L. Greene###
(1297991, 1297991)
 In particular, Fig.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FS
###Fermi Surface Reconstruction in the Electron-doped Cuprate Pr(2-x)CexCuO4|Yoram Dagan,Richard L. Greene###
(1298019, 1298020)
11 shows the largechange in Hall number at the FSR<missing VAR> point in PCCO, similar to that found recentlyin YBCO and L<missing VAR>SCO (See ref[1] and [2]).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PCCO
###Fermi Surface Reconstruction in the Electron-doped Cuprate Pr(2-x)CexCuO4|Yoram Dagan,Richard L. Greene###
(1298027, 1298030)
11 shows the largechange in Hall number at the FSR<missing VAR> point in PCCO, similar to that found recentlyin YBCO and L<missing VAR>SCO (See ref[1] and [2]).
Featurization terminated normally.
0,0,0,0,0,0.5,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YBCO
###Fermi Surface Reconstruction in the Electron-doped Cuprate Pr(2-x)CexCuO4|Yoram Dagan,Richard L. Greene###
(1298046, 1298049)
11 shows the largechange in Hall number at the FSR<missing VAR> point in PCCO, similar to that found recentlyin YBCO and L<missing VAR>SCO (See ref[1] and [2]).
Featurization terminated normally.
0,0,0,0,0.25,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SCO
###Fermi Surface Reconstruction in the Electron-doped Cuprate Pr(2-x)CexCuO4|Yoram Dagan,Richard L. Greene###
(1298054, 1298056)
11 shows the largechange in Hall number at the FSR<missing VAR> point in PCCO, similar to that found recentlyin YBCO and L<missing VAR>SCO (See ref[1] and [2]).
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FS
###Fermi Surface Reconstruction in the Electron-doped Cuprate Pr(2-x)CexCuO4|Yoram Dagan,Richard L. Greene###
(1298100, 1298101)
6 illustrates how theresistivity upturn is affected by the FSR<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FS
###Fermi Surface Reconstruction in the Electron-doped Cuprate Pr(2-x)CexCuO4|Yoram Dagan,Richard L. Greene###
(1298142, 1298143)
 The cause of the resistivity upturnhas been attributed to the loss of carriers at doping below the FSR<missing VAR> in thehole-doped cuprates (see Ref.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PCCO
###Fermi Surface Reconstruction in the Electron-doped Cuprate Pr(2-x)CexCuO4|Yoram Dagan,Richard L. Greene###
(1298187, 1298190)
 3), however, this scenario does not explain thedata for PCCO.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FS
###Fermi Surface Reconstruction in the Electron-doped Cuprate Pr(2-x)CexCuO4|Yoram Dagan,Richard L. Greene###
(1298245, 1298246)
 The upturn in n<missing VAR>-doped cuprates is more-likely due to acombination of carrier decrease and a change in the scattering rate below theFSR<missing VAR> (see also Ref.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FS
###Fermi Surface Reconstruction in the Electron-doped Cuprate Pr(2-x)CexCuO4|Yoram Dagan,Richard L. Greene###
(1298275, 1298276)
 The change in spin scattering below the FSR<missing VAR> isillustrated by Fig.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magnetoresistance and valley degree of freedom in bulk bismuth|Zengwei Zhu,Benoît Fauqué,Kamran Behnia,Yuki Fuseya###
(1298380, 1298380)
 In this paper, we first review fundamental aspects of magnetoresistance inmulti-valley systems based on the semiclassical theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Magnetoresistance and valley degree of freedom in bulk bismuth|Zengwei Zhu,Benoît Fauqué,Kamran Behnia,Yuki Fuseya###
(1298514, 1298514)
 As a consequence, themagnetoconductivity in each valley is extremely sensitive to the orientation ofthe magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magnetoresistance and valley degree of freedom in bulk bismuth|Zengwei Zhu,Benoît Fauqué,Kamran Behnia,Yuki Fuseya###
(1298602, 1298602)
In addition to this simple semi-classical effect, other phenomena arise in thehigh-field limit as a consequence of an intricate Landau spectrum.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magnetoresistance and valley degree of freedom in bulk bismuth|Zengwei Zhu,Benoît Fauqué,Kamran Behnia,Yuki Fuseya###
(1298653, 1298653)
 In thevicinity of the quantum limit, the orientation of magnetic field significantlyaffects the distribution of carriers in each valley, namely, the valleypolarization is induced by the magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Na3Bi
###Experimental tests of the chiral anomaly magnetoresistance in the Dirac-Weyl semimetals Na$_3$Bi and GdPtBi|Sihang Liang,Jingjing Lin,Satya Kushwaha,Jie Xing,Ni Ni,R. J. Cava,N. P. Ong###
(1299058, 1299060)
Experimental tests of the chiral anomaly magnetoresistance in the Dirac-Weyl semimetals Na3Bi and GdPtBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[489.0, 0, 'and', 10],[490.0, 10, 'T', 10]

GdPtBi
###Experimental tests of the chiral anomaly magnetoresistance in the Dirac-Weyl semimetals Na$_3$Bi and GdPtBi|Sihang Liang,Jingjing Lin,Satya Kushwaha,Jie Xing,Ni Ni,R. J. Cava,N. P. Ong###
(1299064, 1299066)
Experimental tests of the chiral anomaly magnetoresistance in the Dirac-Weyl semimetals Na3Bi and GdPtBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[483.0, 0, 'and', 10],[484.0, 10, 'T', 10]

In
###Experimental tests of the chiral anomaly magnetoresistance in the Dirac-Weyl semimetals Na$_3$Bi and GdPtBi|Sihang Liang,Jingjing Lin,Satya Kushwaha,Jie Xing,Ni Ni,R. J. Cava,N. P. Ong###
(1299069, 1299069)
 In the Dirac/Weyl semimetal, the chiral anomaly appears as an axial currentarising from charge-pumping between the lowest (chiral) Landau levels of theWeyl nodes, when an electric field is applied parallel to a magnetic field bfB.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[480.0, 0, 'and', 9],[481.0, 10, 'T', 9]

B
###Experimental tests of the chiral anomaly magnetoresistance in the Dirac-Weyl semimetals Na$_3$Bi and GdPtBi|Sihang Liang,Jingjing Lin,Satya Kushwaha,Jie Xing,Ni Ni,R. J. Cava,N. P. Ong###
(1299154, 1299154)
 In the Dirac/Weyl semimetal, the chiral anomaly appears as an axial currentarising from charge-pumping between the lowest (chiral) Landau levels of theWeyl nodes, when an electric field is applied parallel to a magnetic field bfB.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[395.0, 0, 'and', 9],[396.0, 10, 'T', 9]

Na3Bi
###Experimental tests of the chiral anomaly magnetoresistance in the Dirac-Weyl semimetals Na$_3$Bi and GdPtBi|Sihang Liang,Jingjing Lin,Satya Kushwaha,Jie Xing,Ni Ni,R. J. Cava,N. P. Ong###
(1299188, 1299190)
 Evidence for the chiral anomaly was obtained from the longitudinalmagnetoresistance (LMR) in Na3Bi and GdPtBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[359.0, 0, 'and', 8],[360.0, 10, 'T', 8]

GdPtBi
###Experimental tests of the chiral anomaly magnetoresistance in the Dirac-Weyl semimetals Na$_3$Bi and GdPtBi|Sihang Liang,Jingjing Lin,Satya Kushwaha,Jie Xing,Ni Ni,R. J. Cava,N. P. Ong###
(1299194, 1299196)
 Evidence for the chiral anomaly was obtained from the longitudinalmagnetoresistance (LMR) in Na3Bi and GdPtBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[353.0, 0, 'and', 8],[354.0, 10, 'T', 8]

Na3Bi
###Experimental tests of the chiral anomaly magnetoresistance in the Dirac-Weyl semimetals Na$_3$Bi and GdPtBi|Sihang Liang,Jingjing Lin,Satya Kushwaha,Jie Xing,Ni Ni,R. J. Cava,N. P. Ong###
(1299270, 1299272)
 Here we implement a litmus test that allows theintrinsic LMR in Na3Bi and GdPtBi to be sharply distinguished from purecurrent jetting effects (in pure Bi).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[277.0, 0, 'and', 6],[278.0, 10, 'T', 6]

GdPtBi
###Experimental tests of the chiral anomaly magnetoresistance in the Dirac-Weyl semimetals Na$_3$Bi and GdPtBi|Sihang Liang,Jingjing Lin,Satya Kushwaha,Jie Xing,Ni Ni,R. J. Cava,N. P. Ong###
(1299276, 1299278)
 Here we implement a litmus test that allows theintrinsic LMR in Na3Bi and GdPtBi to be sharply distinguished from purecurrent jetting effects (in pure Bi).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[271.0, 0, 'and', 6],[272.0, 10, 'T', 6]

Bi
###Experimental tests of the chiral anomaly magnetoresistance in the Dirac-Weyl semimetals Na$_3$Bi and GdPtBi|Sihang Liang,Jingjing Lin,Satya Kushwaha,Jie Xing,Ni Ni,R. J. Cava,N. P. Ong###
(1299304, 1299304)
 Here we implement a litmus test that allows theintrinsic LMR in Na3Bi and GdPtBi to be sharply distinguished from purecurrent jetting effects (in pure Bi).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[245.0, 0, 'and', 6],[246.0, 10, 'T', 6]

In
###Experimental tests of the chiral anomaly magnetoresistance in the Dirac-Weyl semimetals Na$_3$Bi and GdPtBi|Sihang Liang,Jingjing Lin,Satya Kushwaha,Jie Xing,Ni Ni,R. J. Cava,N. P. Ong###
(1299405, 1299405)
 In Bi, R<missing VAR>spinesharply increases with B but R<missing VAR>edge decreases (jetting effects aredominant).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 0, 'and', 3],[145.0, 10, 'T', 3]

Bi
###Experimental tests of the chiral anomaly magnetoresistance in the Dirac-Weyl semimetals Na$_3$Bi and GdPtBi|Sihang Liang,Jingjing Lin,Satya Kushwaha,Jie Xing,Ni Ni,R. J. Cava,N. P. Ong###
(1299407, 1299407)
 In Bi, R<missing VAR>spinesharply increases with B but R<missing VAR>edge decreases (jetting effects aredominant).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 0, 'and', 3],[143.0, 10, 'T', 3]

B
###Experimental tests of the chiral anomaly magnetoresistance in the Dirac-Weyl semimetals Na$_3$Bi and GdPtBi|Sihang Liang,Jingjing Lin,Satya Kushwaha,Jie Xing,Ni Ni,R. J. Cava,N. P. Ong###
(1299420, 1299420)
 In Bi, R<missing VAR>spinesharply increases with B but R<missing VAR>edge decreases (jetting effects aredominant).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 0, 'and', 3],[130.0, 10, 'T', 3]

Na3Bi
###Experimental tests of the chiral anomaly magnetoresistance in the Dirac-Weyl semimetals Na$_3$Bi and GdPtBi|Sihang Liang,Jingjing Lin,Satya Kushwaha,Jie Xing,Ni Ni,R. J. Cava,N. P. Ong###
(1299446, 1299448)
 However, in Na3Bi and GdPtBi, both R<missing VAR>spine and R<missing VAR>edgedecrease (jetting effects are subdominant).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 0, 'and', 2],[102.0, 10, 'T', 2]

GdPtBi
###Experimental tests of the chiral anomaly magnetoresistance in the Dirac-Weyl semimetals Na$_3$Bi and GdPtBi|Sihang Liang,Jingjing Lin,Satya Kushwaha,Jie Xing,Ni Ni,R. J. Cava,N. P. Ong###
(1299452, 1299454)
 However, in Na3Bi and GdPtBi, both R<missing VAR>spine and R<missing VAR>edgedecrease (jetting effects are subdominant).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 0, 'and', 2],[96.0, 10, 'T', 2]

(B)
###Experimental tests of the chiral anomaly magnetoresistance in the Dirac-Weyl semimetals Na$_3$Bi and GdPtBi|Sihang Liang,Jingjing Lin,Satya Kushwaha,Jie Xing,Ni Ni,R. J. Cava,N. P. Ong###
(1299522, 1299524)
 We find that the intrinsiclongitudinal resistivity rhoxx(B) in Na3Bi decreases by a factor of10.9 between B  0 and 10 T.
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 0, 'and', 0],[26.0, 10, 'T', 0]

Na3Bi
###Experimental tests of the chiral anomaly magnetoresistance in the Dirac-Weyl semimetals Na$_3$Bi and GdPtBi|Sihang Liang,Jingjing Lin,Satya Kushwaha,Jie Xing,Ni Ni,R. J. Cava,N. P. Ong###
(1299528, 1299530)
 We find that the intrinsiclongitudinal resistivity rhoxx(B) in Na3Bi decreases by a factor of10.9 between B  0 and 10 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 0, 'and', 0],[20.0, 10, 'T', 0]

B
###Experimental tests of the chiral anomaly magnetoresistance in the Dirac-Weyl semimetals Na$_3$Bi and GdPtBi|Sihang Liang,Jingjing Lin,Satya Kushwaha,Jie Xing,Ni Ni,R. J. Cava,N. P. Ong###
(1299547, 1299547)
 We find that the intrinsiclongitudinal resistivity rhoxx(B) in Na3Bi decreases by a factor of10.9 between B  0 and 10 T.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 0, 'and', 0],[3.0, 10, 'T', 0]

ZrTe5
###Experimental tests of the chiral anomaly magnetoresistance in the Dirac-Weyl semimetals Na$_3$Bi and GdPtBi|Sihang Liang,Jingjing Lin,Satya Kushwaha,Jie Xing,Ni Ni,R. J. Cava,N. P. Ong###
(1299647, 1299649)
 We briefly discuss how the squeeze test may beextended to test ZrTe5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 0, 'and', 3],[97.0, 10, 'T', 3]

TaSb2
###Field-induced resistivity plateau and unsaturated negative magnetoresistance in topological semimetal TaSb2|Yuke Li,Lin Li,Jialu Wang,Tingting Wang,Xiaofeng Xu,Chuanying Xi,Chao Cao,Jianhui Dai###
(1299682, 1299684)
Field-induced resistivity plateau and unsaturated negative magnetoresistance in topological semimetal TaSb2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[469.0, 9, 'T', 8]

S
###Field-induced resistivity plateau and unsaturated negative magnetoresistance in topological semimetal TaSb2|Yuke Li,Lin Li,Jialu Wang,Tingting Wang,Xiaofeng Xu,Chuanying Xi,Chao Cao,Jianhui Dai###
(1299801, 1299801)
 One is the resistivity plateau at low temperatures asobserved in several topological insulators (T<missing VAR>Is), another is the negativemagnetoresistance (MR) when the applied magnetic field is parallel to thecurrent direction as observed in several topological semimetals (T<missing VAR>SMs)including Dirac semimetals (D<missing VAR>SMs) and Weyl semimetals (WSMs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[352.0, 9, 'T', 6]

S
###Field-induced resistivity plateau and unsaturated negative magnetoresistance in topological semimetal TaSb2|Yuke Li,Lin Li,Jialu Wang,Tingting Wang,Xiaofeng Xu,Chuanying Xi,Chao Cao,Jianhui Dai###
(1299814, 1299814)
 One is the resistivity plateau at low temperatures asobserved in several topological insulators (T<missing VAR>Is), another is the negativemagnetoresistance (MR) when the applied magnetic field is parallel to thecurrent direction as observed in several topological semimetals (T<missing VAR>SMs)including Dirac semimetals (D<missing VAR>SMs) and Weyl semimetals (WSMs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[339.0, 9, 'T', 6]

WS
###Field-induced resistivity plateau and unsaturated negative magnetoresistance in topological semimetal TaSb2|Yuke Li,Lin Li,Jialu Wang,Tingting Wang,Xiaofeng Xu,Chuanying Xi,Chao Cao,Jianhui Dai###
(1299825, 1299826)
 One is the resistivity plateau at low temperatures asobserved in several topological insulators (T<missing VAR>Is), another is the negativemagnetoresistance (MR) when the applied magnetic field is parallel to thecurrent direction as observed in several topological semimetals (T<missing VAR>SMs)including Dirac semimetals (D<missing VAR>SMs) and Weyl semimetals (WSMs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[327.0, 9, 'T', 6]

S
###Field-induced resistivity plateau and unsaturated negative magnetoresistance in topological semimetal TaSb2|Yuke Li,Lin Li,Jialu Wang,Tingting Wang,Xiaofeng Xu,Chuanying Xi,Chao Cao,Jianhui Dai###
(1299867, 1299867)
 Usually, thesetwo exotic phenomena emerge in distinct materials with or without time reversalsymmetry (TRS), respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[286.0, 9, 'T', 5]

S
###Field-induced resistivity plateau and unsaturated negative magnetoresistance in topological semimetal TaSb2|Yuke Li,Lin Li,Jialu Wang,Tingting Wang,Xiaofeng Xu,Chuanying Xi,Chao Cao,Jianhui Dai###
(1299896, 1299896)
 Here we report the discovery of a new member inT<missing VAR>SMs, TaSb2, which clearly exhibits both of these phenomena in a singlematerial.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[257.0, 9, 'T', 4]

TaSb2
###Field-induced resistivity plateau and unsaturated negative magnetoresistance in topological semimetal TaSb2|Yuke Li,Lin Li,Jialu Wang,Tingting Wang,Xiaofeng Xu,Chuanying Xi,Chao Cao,Jianhui Dai###
(1299900, 1299902)
 Here we report the discovery of a new member inT<missing VAR>SMs, TaSb2, which clearly exhibits both of these phenomena in a singlematerial.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[251.0, 9, 'T', 4]

Tc
###Field-induced resistivity plateau and unsaturated negative magnetoresistance in topological semimetal TaSb2|Yuke Li,Lin Li,Jialu Wang,Tingting Wang,Xiaofeng Xu,Chuanying Xi,Chao Cao,Jianhui Dai###
(1300009, 1300009)
 While applying magnetic field it exhibits insulating behaviorbefore appearance of a resistivity plateau below Tc 13 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 9, 'T', 2]

K
###Field-induced resistivity plateau and unsaturated negative magnetoresistance in topological semimetal TaSb2|Yuke Li,Lin Li,Jialu Wang,Tingting Wang,Xiaofeng Xu,Chuanying Xi,Chao Cao,Jianhui Dai###
(1300013, 1300013)
 While applying magnetic field it exhibits insulating behaviorbefore appearance of a resistivity plateau below Tc 13 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 9, 'T', 2]

In
###Field-induced resistivity plateau and unsaturated negative magnetoresistance in topological semimetal TaSb2|Yuke Li,Lin Li,Jialu Wang,Tingting Wang,Xiaofeng Xu,Chuanying Xi,Chao Cao,Jianhui Dai###
(1300016, 1300016)
 In the plateauregime, the ultrahigh carrier mobility and extreme magnetoresistance (XMR) forthe field perpendicular to the current are observed as in D<missing VAR>SMs and WSMs, inaddition to a quantum oscillation behavior with non-trivial Berry phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 9, 'T', 1]

S
###Field-induced resistivity plateau and unsaturated negative magnetoresistance in topological semimetal TaSb2|Yuke Li,Lin Li,Jialu Wang,Tingting Wang,Xiaofeng Xu,Chuanying Xi,Chao Cao,Jianhui Dai###
(1300070, 1300070)
 In the plateauregime, the ultrahigh carrier mobility and extreme magnetoresistance (XMR) forthe field perpendicular to the current are observed as in D<missing VAR>SMs and WSMs, inaddition to a quantum oscillation behavior with non-trivial Berry phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 9, 'T', 1]

WS
###Field-induced resistivity plateau and unsaturated negative magnetoresistance in topological semimetal TaSb2|Yuke Li,Lin Li,Jialu Wang,Tingting Wang,Xiaofeng Xu,Chuanying Xi,Chao Cao,Jianhui Dai###
(1300075, 1300076)
 In the plateauregime, the ultrahigh carrier mobility and extreme magnetoresistance (XMR) forthe field perpendicular to the current are observed as in D<missing VAR>SMs and WSMs, inaddition to a quantum oscillation behavior with non-trivial Berry phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 9, 'T', 1]

In
###Field-induced resistivity plateau and unsaturated negative magnetoresistance in topological semimetal TaSb2|Yuke Li,Lin Li,Jialu Wang,Tingting Wang,Xiaofeng Xu,Chuanying Xi,Chao Cao,Jianhui Dai###
(1300106, 1300106)
 Incontrast to the most known D<missing VAR>SMs and WSMs, the negative MR in TaSb2 does notsaturate up to 9 T, which, together with the almost linear Hall resistivity,manifests itself an electron-hole non-compensated TMS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 9, 'T', 0]

S
###Field-induced resistivity plateau and unsaturated negative magnetoresistance in topological semimetal TaSb2|Yuke Li,Lin Li,Jialu Wang,Tingting Wang,Xiaofeng Xu,Chuanying Xi,Chao Cao,Jianhui Dai###
(1300120, 1300120)
 Incontrast to the most known D<missing VAR>SMs and WSMs, the negative MR in TaSb2 does notsaturate up to 9 T, which, together with the almost linear Hall resistivity,manifests itself an electron-hole non-compensated TMS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 9, 'T', 0]

WS
###Field-induced resistivity plateau and unsaturated negative magnetoresistance in topological semimetal TaSb2|Yuke Li,Lin Li,Jialu Wang,Tingting Wang,Xiaofeng Xu,Chuanying Xi,Chao Cao,Jianhui Dai###
(1300125, 1300126)
 Incontrast to the most known D<missing VAR>SMs and WSMs, the negative MR in TaSb2 does notsaturate up to 9 T, which, together with the almost linear Hall resistivity,manifests itself an electron-hole non-compensated TMS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 9, 'T', 0]

TaSb2
###Field-induced resistivity plateau and unsaturated negative magnetoresistance in topological semimetal TaSb2|Yuke Li,Lin Li,Jialu Wang,Tingting Wang,Xiaofeng Xu,Chuanying Xi,Chao Cao,Jianhui Dai###
(1300139, 1300141)
 Incontrast to the most known D<missing VAR>SMs and WSMs, the negative MR in TaSb2 does notsaturate up to 9 T, which, together with the almost linear Hall resistivity,manifests itself an electron-hole non-compensated TMS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 9, 'T', 0]

S
###Field-induced resistivity plateau and unsaturated negative magnetoresistance in topological semimetal TaSb2|Yuke Li,Lin Li,Jialu Wang,Tingting Wang,Xiaofeng Xu,Chuanying Xi,Chao Cao,Jianhui Dai###
(1300191, 1300191)
 Incontrast to the most known D<missing VAR>SMs and WSMs, the negative MR in TaSb2 does notsaturate up to 9 T, which, together with the almost linear Hall resistivity,manifests itself an electron-hole non-compensated TMS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 9, 'T', 0]

S
###Field-induced resistivity plateau and unsaturated negative magnetoresistance in topological semimetal TaSb2|Yuke Li,Lin Li,Jialu Wang,Tingting Wang,Xiaofeng Xu,Chuanying Xi,Chao Cao,Jianhui Dai###
(1300242, 1300242)
 These findings indicatethat the resistivity plateau could be a generic feature of topology-protectedmetallic states even in the absence of TRS and compatible with the negative MRdepending on the field direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 9, 'T', 1]

TaSb2
###Field-induced resistivity plateau and unsaturated negative magnetoresistance in topological semimetal TaSb2|Yuke Li,Lin Li,Jialu Wang,Tingting Wang,Xiaofeng Xu,Chuanying Xi,Chao Cao,Jianhui Dai###
(1300286, 1300288)
 Our experiment extends a materials basisrepresented by TaSb2 as a new platform for future theoretical investigationsand device applications of topological materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 9, 'T', 2]

S
###Thermoballistic spin-polarized electron transport in paramagnetic semiconductors|R. Lipperheide,U. Wille###
(1300364, 1300364)
 Spin-polarized electron transport in diluted magnetic semiconductors (DMS) inthe paramagnetic phase is described within the thermoballistic transport model.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Thermoballistic spin-polarized electron transport in paramagnetic semiconductors|R. Lipperheide,U. Wille###
(1300392, 1300392)
In this (semiclassical) model, the ballistic and diffusive transport mechanismsare unified in terms of a thermoballistic current in which electrons moveballistically across intervals enclosed between arbitrarily distributed pointsof local thermal equilibrium.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Thermoballistic spin-polarized electron transport in paramagnetic semiconductors|R. Lipperheide,U. Wille###
(1300525, 1300525)
 In paramagnetic DMS exposed toan external magnetic field, the conduction band is spin-split due to the giantZeeman effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Thermoballistic spin-polarized electron transport in paramagnetic semiconductors|R. Lipperheide,U. Wille###
(1300531, 1300531)
 In paramagnetic DMS exposed toan external magnetic field, the conduction band is spin-split due to the giantZeeman effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Thermoballistic spin-polarized electron transport in paramagnetic semiconductors|R. Lipperheide,U. Wille###
(1300573, 1300573)
 In order to deal with this situation, we extend our previousformulation of thermoballistic spin-polarized transport so as to take intoaccount an arbitrary (position-dependent) spin splitting of the conductionband.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Thermoballistic spin-polarized electron transport in paramagnetic semiconductors|R. Lipperheide,U. Wille###
(1300799, 1300799)
 As an illustrative example, we apply the thermoballisticdescription to spin-polarized transport in DMS/NM<missing VAR>S/DMS heterostructures formedof a nonmagnetic semiconducting sample (NM<missing VAR>S) sandwiched between two DMS layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S/N
###Thermoballistic spin-polarized electron transport in paramagnetic semiconductors|R. Lipperheide,U. Wille###
(1300831, 1300833)
 As an illustrative example, we apply the thermoballisticdescription to spin-polarized transport in DMS/NM<missing VAR>S/DMS heterostructures formedof a nonmagnetic semiconducting sample (NM<missing VAR>S) sandwiched between two DMS layers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

S
###Thermoballistic spin-polarized electron transport in paramagnetic semiconductors|R. Lipperheide,U. Wille###
(1300835, 1300835)
 As an illustrative example, we apply the thermoballisticdescription to spin-polarized transport in DMS/NM<missing VAR>S/DMS heterostructures formedof a nonmagnetic semiconducting sample (NM<missing VAR>S) sandwiched between two DMS layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Thermoballistic spin-polarized electron transport in paramagnetic semiconductors|R. Lipperheide,U. Wille###
(1300839, 1300839)
 As an illustrative example, we apply the thermoballisticdescription to spin-polarized transport in DMS/NM<missing VAR>S/DMS heterostructures formedof a nonmagnetic semiconducting sample (NM<missing VAR>S) sandwiched between two DMS layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Thermoballistic spin-polarized electron transport in paramagnetic semiconductors|R. Lipperheide,U. Wille###
(1300857, 1300857)
 As an illustrative example, we apply the thermoballisticdescription to spin-polarized transport in DMS/NM<missing VAR>S/DMS heterostructures formedof a nonmagnetic semiconducting sample (NM<missing VAR>S) sandwiched between two DMS layers.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Thermoballistic spin-polarized electron transport in paramagnetic semiconductors|R. Lipperheide,U. Wille###
(1300859, 1300859)
 As an illustrative example, we apply the thermoballisticdescription to spin-polarized transport in DMS/NM<missing VAR>S/DMS heterostructures formedof a nonmagnetic semiconducting sample (NM<missing VAR>S) sandwiched between two DMS layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Thermoballistic spin-polarized electron transport in paramagnetic semiconductors|R. Lipperheide,U. Wille###
(1300870, 1300870)
 As an illustrative example, we apply the thermoballisticdescription to spin-polarized transport in DMS/NM<missing VAR>S/DMS heterostructures formedof a nonmagnetic semiconducting sample (NM<missing VAR>S) sandwiched between two DMS layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe1
###Coupling of electronic and magnetic properties in Fe1+y(Te1-xSex)|J. Hu,T. J. Liu,B. Qian,Z. Q. Mao###
(1300977, 1300978)
Coupling of electronic and magnetic properties in Fe1y<missing VAR>(Te1-xSex).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 0.02, 'and', 1],[92.0, 0.02, 'series', 2],[110.0, 0.3, 'composition', 2],[203.0, 26, 'mJ', 2],[347.0, -0.5, ',', 4],[387.0, 0.02, 'system', 4],[413.0, 0.3, ',', 4],[423.0, 34, 'mJ', 4],[436.0, -0.5, ';', 4]

Te1-x
###Coupling of electronic and magnetic properties in Fe1+y(Te1-xSex)|J. Hu,T. J. Liu,B. Qian,Z. Q. Mao###
(1300981, 1300984)
Coupling of electronic and magnetic properties in Fe1y<missing VAR>(Te1-xSex).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[74.0, 0.02, 'and', 1],[86.0, 0.02, 'series', 2],[104.0, 0.3, 'composition', 2],[197.0, 26, 'mJ', 2],[341.0, -0.5, ',', 4],[381.0, 0.02, 'system', 4],[407.0, 0.3, ',', 4],[417.0, 34, 'mJ', 4],[430.0, -0.5, ';', 4]

Fe1
###Coupling of electronic and magnetic properties in Fe1+y(Te1-xSex)|J. Hu,T. J. Liu,B. Qian,Z. Q. Mao###
(1301012, 1301013)
 We have studied the coupling of electronic and magnetic properties inFe1y<missing VAR>(Te1-xSex) via systematic specific heat, magnetoresistivity, and Hallcoefficient measurements on two groups of samples with y<missing VAR>  0.02 and 0.1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 0.02, 'and', 0],[57.0, 0.02, 'series', 1],[75.0, 0.3, 'composition', 1],[168.0, 26, 'mJ', 1],[312.0, -0.5, ',', 3],[352.0, 0.02, 'system', 3],[378.0, 0.3, ',', 3],[388.0, 34, 'mJ', 3],[401.0, -0.5, ';', 3]

Te1-x
###Coupling of electronic and magnetic properties in Fe1+y(Te1-xSex)|J. Hu,T. J. Liu,B. Qian,Z. Q. Mao###
(1301016, 1301019)
 We have studied the coupling of electronic and magnetic properties inFe1y<missing VAR>(Te1-xSex) via systematic specific heat, magnetoresistivity, and Hallcoefficient measurements on two groups of samples with y<missing VAR>  0.02 and 0.1.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[39.0, 0.02, 'and', 0],[51.0, 0.02, 'series', 1],[69.0, 0.3, 'composition', 1],[162.0, 26, 'mJ', 1],[306.0, -0.5, ',', 3],[346.0, 0.02, 'system', 3],[372.0, 0.3, ',', 3],[382.0, 34, 'mJ', 3],[395.0, -0.5, ';', 3]

In
###Coupling of electronic and magnetic properties in Fe1+y(Te1-xSex)|J. Hu,T. J. Liu,B. Qian,Z. Q. Mao###
(1301063, 1301063)
 In they<missing VAR>  0.02 series, we find that the 0.09 < x<missing VAR> < 0.3 composition region, wheresuperconductivity is suppressed, has large Sommerfeld coefficient Gamma (55-65mJ/mol K2), positive Hall coefficient R<missing VAR>H and negative magnetoresistance MR atlow temperature, in sharp contrast with the x<missing VAR>0.4-0.5 region where Gamma dropsto  26 mJ/mol K2 and R<missing VAR>H / MR becomes negative/positive at low temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 0.02, 'and', 1],[7.0, 0.02, 'series', 0],[25.0, 0.3, 'composition', 0],[118.0, 26, 'mJ', 0],[262.0, -0.5, ',', 2],[302.0, 0.02, 'system', 2],[328.0, 0.3, ',', 2],[338.0, 34, 'mJ', 2],[351.0, -0.5, ';', 2]

K2
###Coupling of electronic and magnetic properties in Fe1+y(Te1-xSex)|J. Hu,T. J. Liu,B. Qian,Z. Q. Mao###
(1301124, 1301125)
 In they<missing VAR>  0.02 series, we find that the 0.09 < x<missing VAR> < 0.3 composition region, wheresuperconductivity is suppressed, has large Sommerfeld coefficient Gamma (55-65mJ/mol K2), positive Hall coefficient R<missing VAR>H and negative magnetoresistance MR atlow temperature, in sharp contrast with the x<missing VAR>0.4-0.5 region where Gamma dropsto  26 mJ/mol K2 and R<missing VAR>H / MR becomes negative/positive at low temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 0.02, 'and', 1],[54.0, 0.02, 'series', 0],[36.0, 0.3, 'composition', 0],[56.0, 26, 'mJ', 0],[200.0, -0.5, ',', 2],[240.0, 0.02, 'system', 2],[266.0, 0.3, ',', 2],[276.0, 34, 'mJ', 2],[289.0, -0.5, ';', 2]

H
###Coupling of electronic and magnetic properties in Fe1+y(Te1-xSex)|J. Hu,T. J. Liu,B. Qian,Z. Q. Mao###
(1301136, 1301136)
 In they<missing VAR>  0.02 series, we find that the 0.09 < x<missing VAR> < 0.3 composition region, wheresuperconductivity is suppressed, has large Sommerfeld coefficient Gamma (55-65mJ/mol K2), positive Hall coefficient R<missing VAR>H and negative magnetoresistance MR atlow temperature, in sharp contrast with the x<missing VAR>0.4-0.5 region where Gamma dropsto  26 mJ/mol K2 and R<missing VAR>H / MR becomes negative/positive at low temperature.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 0.02, 'and', 1],[66.0, 0.02, 'series', 0],[48.0, 0.3, 'composition', 0],[45.0, 26, 'mJ', 0],[189.0, -0.5, ',', 2],[229.0, 0.02, 'system', 2],[255.0, 0.3, ',', 2],[265.0, 34, 'mJ', 2],[278.0, -0.5, ';', 2]

K2
###Coupling of electronic and magnetic properties in Fe1+y(Te1-xSex)|J. Hu,T. J. Liu,B. Qian,Z. Q. Mao###
(1301185, 1301186)
 In they<missing VAR>  0.02 series, we find that the 0.09 < x<missing VAR> < 0.3 composition region, wheresuperconductivity is suppressed, has large Sommerfeld coefficient Gamma (55-65mJ/mol K2), positive Hall coefficient R<missing VAR>H and negative magnetoresistance MR atlow temperature, in sharp contrast with the x<missing VAR>0.4-0.5 region where Gamma dropsto  26 mJ/mol K2 and R<missing VAR>H / MR becomes negative/positive at low temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 0.02, 'and', 1],[115.0, 0.02, 'series', 0],[97.0, 0.3, 'composition', 0],[4.0, 26, 'mJ', 0],[139.0, -0.5, ',', 2],[179.0, 0.02, 'system', 2],[205.0, 0.3, ',', 2],[215.0, 34, 'mJ', 2],[228.0, -0.5, ';', 2]

H
###Coupling of electronic and magnetic properties in Fe1+y(Te1-xSex)|J. Hu,T. J. Liu,B. Qian,Z. Q. Mao###
(1301191, 1301191)
 In they<missing VAR>  0.02 series, we find that the 0.09 < x<missing VAR> < 0.3 composition region, wheresuperconductivity is suppressed, has large Sommerfeld coefficient Gamma (55-65mJ/mol K2), positive Hall coefficient R<missing VAR>H and negative magnetoresistance MR atlow temperature, in sharp contrast with the x<missing VAR>0.4-0.5 region where Gamma dropsto  26 mJ/mol K2 and R<missing VAR>H / MR becomes negative/positive at low temperature.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 0.02, 'and', 1],[121.0, 0.02, 'series', 0],[103.0, 0.3, 'composition', 0],[10.0, 26, 'mJ', 0],[134.0, -0.5, ',', 2],[174.0, 0.02, 'system', 2],[200.0, 0.3, ',', 2],[210.0, 34, 'mJ', 2],[223.0, -0.5, ';', 2]

H
###Coupling of electronic and magnetic properties in Fe1+y(Te1-xSex)|J. Hu,T. J. Liu,B. Qian,Z. Q. Mao###
(1301238, 1301238)
Dramatic changes of Gamma, as well as sign reversal in low-temperature R<missing VAR>H andMR, are also observed across the x<missing VAR>0.1 boundary where the long-rangeantiferromagnetic order is suppressed.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[180.0, 0.02, 'and', 2],[168.0, 0.02, 'series', 1],[150.0, 0.3, 'composition', 1],[57.0, 26, 'mJ', 1],[87.0, -0.5, ',', 1],[127.0, 0.02, 'system', 1],[153.0, 0.3, ',', 1],[163.0, 34, 'mJ', 1],[176.0, -0.5, ';', 1]

Fe
###Coupling of electronic and magnetic properties in Fe1+y(Te1-xSex)|J. Hu,T. J. Liu,B. Qian,Z. Q. Mao###
(1301298, 1301298)
 However, for the system with richinterstitial excess Fe (y<missing VAR>  0.1), where bulk superconductivity is suppressedeven for x<missing VAR>0.4-0.5, the variations of Gamma, R<missing VAR>H and MR with x<missing VAR> are distinctfrom those seen in y<missing VAR>  0.02 system Gamma is 40 mJ/mol K2 for 0.1 < x<missing VAR> < 0.3,and drops to  34 mJ/mol K2 for x<missing VAR>  0.4-0.5; R<missing VAR>H and MR does not show any signreversal as x<missing VAR> is increased above 0.3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[240.0, 0.02, 'and', 3],[228.0, 0.02, 'series', 2],[210.0, 0.3, 'composition', 2],[117.0, 26, 'mJ', 2],[27.0, -0.5, ',', 0],[67.0, 0.02, 'system', 0],[93.0, 0.3, ',', 0],[103.0, 34, 'mJ', 0],[116.0, -0.5, ';', 0]

H
###Coupling of electronic and magnetic properties in Fe1+y(Te1-xSex)|J. Hu,T. J. Liu,B. Qian,Z. Q. Mao###
(1301339, 1301339)
 However, for the system with richinterstitial excess Fe (y<missing VAR>  0.1), where bulk superconductivity is suppressedeven for x<missing VAR>0.4-0.5, the variations of Gamma, R<missing VAR>H and MR with x<missing VAR> are distinctfrom those seen in y<missing VAR>  0.02 system Gamma is 40 mJ/mol K2 for 0.1 < x<missing VAR> < 0.3,and drops to  34 mJ/mol K2 for x<missing VAR>  0.4-0.5; R<missing VAR>H and MR does not show any signreversal as x<missing VAR> is increased above 0.3.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[281.0, 0.02, 'and', 3],[269.0, 0.02, 'series', 2],[251.0, 0.3, 'composition', 2],[158.0, 26, 'mJ', 2],[14.0, -0.5, ',', 0],[26.0, 0.02, 'system', 0],[52.0, 0.3, ',', 0],[62.0, 34, 'mJ', 0],[75.0, -0.5, ';', 0]

K2
###Coupling of electronic and magnetic properties in Fe1+y(Te1-xSex)|J. Hu,T. J. Liu,B. Qian,Z. Q. Mao###
(1301378, 1301379)
 However, for the system with richinterstitial excess Fe (y<missing VAR>  0.1), where bulk superconductivity is suppressedeven for x<missing VAR>0.4-0.5, the variations of Gamma, R<missing VAR>H and MR with x<missing VAR> are distinctfrom those seen in y<missing VAR>  0.02 system Gamma is 40 mJ/mol K2 for 0.1 < x<missing VAR> < 0.3,and drops to  34 mJ/mol K2 for x<missing VAR>  0.4-0.5; R<missing VAR>H and MR does not show any signreversal as x<missing VAR> is increased above 0.3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[320.0, 0.02, 'and', 3],[308.0, 0.02, 'series', 2],[290.0, 0.3, 'composition', 2],[197.0, 26, 'mJ', 2],[53.0, -0.5, ',', 0],[13.0, 0.02, 'system', 0],[12.0, 0.3, ',', 0],[22.0, 34, 'mJ', 0],[35.0, -0.5, ';', 0]

K2
###Coupling of electronic and magnetic properties in Fe1+y(Te1-xSex)|J. Hu,T. J. Liu,B. Qian,Z. Q. Mao###
(1301405, 1301406)
 However, for the system with richinterstitial excess Fe (y<missing VAR>  0.1), where bulk superconductivity is suppressedeven for x<missing VAR>0.4-0.5, the variations of Gamma, R<missing VAR>H and MR with x<missing VAR> are distinctfrom those seen in y<missing VAR>  0.02 system Gamma is 40 mJ/mol K2 for 0.1 < x<missing VAR> < 0.3,and drops to  34 mJ/mol K2 for x<missing VAR>  0.4-0.5; R<missing VAR>H and MR does not show any signreversal as x<missing VAR> is increased above 0.3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[347.0, 0.02, 'and', 3],[335.0, 0.02, 'series', 2],[317.0, 0.3, 'composition', 2],[224.0, 26, 'mJ', 2],[80.0, -0.5, ',', 0],[40.0, 0.02, 'system', 0],[14.0, 0.3, ',', 0],[4.0, 34, 'mJ', 0],[8.0, -0.5, ';', 0]

H
###Coupling of electronic and magnetic properties in Fe1+y(Te1-xSex)|J. Hu,T. J. Liu,B. Qian,Z. Q. Mao###
(1301419, 1301419)
 However, for the system with richinterstitial excess Fe (y<missing VAR>  0.1), where bulk superconductivity is suppressedeven for x<missing VAR>0.4-0.5, the variations of Gamma, R<missing VAR>H and MR with x<missing VAR> are distinctfrom those seen in y<missing VAR>  0.02 system Gamma is 40 mJ/mol K2 for 0.1 < x<missing VAR> < 0.3,and drops to  34 mJ/mol K2 for x<missing VAR>  0.4-0.5; R<missing VAR>H and MR does not show any signreversal as x<missing VAR> is increased above 0.3.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[361.0, 0.02, 'and', 3],[349.0, 0.02, 'series', 2],[331.0, 0.3, 'composition', 2],[238.0, 26, 'mJ', 2],[94.0, -0.5, ',', 0],[54.0, 0.02, 'system', 0],[28.0, 0.3, ',', 0],[18.0, 34, 'mJ', 0],[5.0, -0.5, ';', 0]

Se
###Coupling of electronic and magnetic properties in Fe1+y(Te1-xSex)|J. Hu,T. J. Liu,B. Qian,Z. Q. Mao###
(1301508, 1301508)
 We will show that all these results canbe understood in light of the evolution of the incoherent magnetic scatteringby (pi,0) magnetic fluctuations with Se concentration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[450.0, 0.02, 'and', 4],[438.0, 0.02, 'series', 3],[420.0, 0.3, 'composition', 3],[327.0, 26, 'mJ', 3],[183.0, -0.5, ',', 1],[143.0, 0.02, 'system', 1],[117.0, 0.3, ',', 1],[107.0, 34, 'mJ', 1],[94.0, -0.5, ';', 1]

In
###Coupling of electronic and magnetic properties in Fe1+y(Te1-xSex)|J. Hu,T. J. Liu,B. Qian,Z. Q. Mao###
(1301513, 1301513)
 In addition, with thesuppression of magnetic scattering by magnetic field, we observed thesurprising effect of a remarkable increase in the superconducting volumefraction under moderate magnetic fields for x<missing VAR>0.3-0.4 samples in the y<missing VAR>  0.02system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[455.0, 0.02, 'and', 5],[443.0, 0.02, 'series', 4],[425.0, 0.3, 'composition', 4],[332.0, 26, 'mJ', 4],[188.0, -0.5, ',', 2],[148.0, 0.02, 'system', 2],[122.0, 0.3, ',', 2],[112.0, 34, 'mJ', 2],[99.0, -0.5, ';', 2]

PrGe
###Giant Rashba effect at the topological surface of PrGe revealing antiferromagnetic spintronics|Soma Banik,Pranab Kumar Das,Azzedine Bendounan,Ivana Vobornik,A. Arya,Nathan Beaulieu,Jun Fujii,A. Thamizhavel,P. U. Sastry,A. K. Sinha,D. M. Phase,S. K. Deb###
(1301622, 1301623)
Giant Rashba effect at the topological surface of PrGe revealing antiferromagnetic spintronics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[180.0, 4, 'f', 4],[201.0, 5, 'd', 4],[206.0, 4, 's', 4],[571.0, 43, '%', 11]

PrGe
###Giant Rashba effect at the topological surface of PrGe revealing antiferromagnetic spintronics|Soma Banik,Pranab Kumar Das,Azzedine Bendounan,Ivana Vobornik,A. Arya,Nathan Beaulieu,Jun Fujii,A. Thamizhavel,P. U. Sastry,A. K. Sinha,D. M. Phase,S. K. Deb###
(1301694, 1301695)
 Here, we report a giant Rashba-typespin-orbit effect on PrGe [010] surface in the paramagnetic phase with Rashbacoefficient alphaR<missing VAR>5 e<missing VAR>VAA.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 4, 'f', 2],[129.0, 5, 'd', 2],[134.0, 4, 's', 2],[499.0, 43, '%', 9]

V
###Giant Rashba effect at the topological surface of PrGe revealing antiferromagnetic spintronics|Soma Banik,Pranab Kumar Das,Azzedine Bendounan,Ivana Vobornik,A. Arya,Nathan Beaulieu,Jun Fujii,A. Thamizhavel,P. U. Sastry,A. K. Sinha,D. M. Phase,S. K. Deb###
(1301723, 1301723)
 Here, we report a giant Rashba-typespin-orbit effect on PrGe [010] surface in the paramagnetic phase with Rashbacoefficient alphaR<missing VAR>5 e<missing VAR>VAA.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 4, 'f', 2],[101.0, 5, 'd', 2],[106.0, 4, 's', 2],[471.0, 43, '%', 9]

K
###Giant Rashba effect at the topological surface of PrGe revealing antiferromagnetic spintronics|Soma Banik,Pranab Kumar Das,Azzedine Bendounan,Ivana Vobornik,A. Arya,Nathan Beaulieu,Jun Fujii,A. Thamizhavel,P. U. Sastry,A. K. Sinha,D. M. Phase,S. K. Deb###
(1301769, 1301769)
 Significant changes in the electronic bandstructure has been observed across the phase transitions from paramagnetic toantiferromagnetic (44 K) and from antiferromagnetic to the ferromagnetic groundstate (41.5 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 4, 'f', 1],[55.0, 5, 'd', 1],[60.0, 4, 's', 1],[425.0, 43, '%', 8]

K
###Giant Rashba effect at the topological surface of PrGe revealing antiferromagnetic spintronics|Soma Banik,Pranab Kumar Das,Azzedine Bendounan,Ivana Vobornik,A. Arya,Nathan Beaulieu,Jun Fujii,A. Thamizhavel,P. U. Sastry,A. K. Sinha,D. M. Phase,S. K. Deb###
(1301792, 1301792)
 Significant changes in the electronic bandstructure has been observed across the phase transitions from paramagnetic toantiferromagnetic (44 K) and from antiferromagnetic to the ferromagnetic groundstate (41.5 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 4, 'f', 1],[32.0, 5, 'd', 1],[37.0, 4, 's', 1],[402.0, 43, '%', 8]

Pr
###Giant Rashba effect at the topological surface of PrGe revealing antiferromagnetic spintronics|Soma Banik,Pranab Kumar Das,Azzedine Bendounan,Ivana Vobornik,A. Arya,Nathan Beaulieu,Jun Fujii,A. Thamizhavel,P. U. Sastry,A. K. Sinha,D. M. Phase,S. K. Deb###
(1301802, 1301802)
 We find that Pr 4f states in PrGe is strongly hybridized withthe Pr 5d and Ge 4s-4p<missing VAR> states near the Fermi level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[1.0, 4, 'f', 0],[22.0, 5, 'd', 0],[27.0, 4, 's', 0],[392.0, 43, '%', 7]

PrGe
###Giant Rashba effect at the topological surface of PrGe revealing antiferromagnetic spintronics|Soma Banik,Pranab Kumar Das,Azzedine Bendounan,Ivana Vobornik,A. Arya,Nathan Beaulieu,Jun Fujii,A. Thamizhavel,P. U. Sastry,A. K. Sinha,D. M. Phase,S. K. Deb###
(1301809, 1301810)
 We find that Pr 4f states in PrGe is strongly hybridized withthe Pr 5d and Ge 4s-4p<missing VAR> states near the Fermi level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 4, 'f', 0],[14.0, 5, 'd', 0],[19.0, 4, 's', 0],[384.0, 43, '%', 7]

Pr
###Giant Rashba effect at the topological surface of PrGe revealing antiferromagnetic spintronics|Soma Banik,Pranab Kumar Das,Azzedine Bendounan,Ivana Vobornik,A. Arya,Nathan Beaulieu,Jun Fujii,A. Thamizhavel,P. U. Sastry,A. K. Sinha,D. M. Phase,S. K. Deb###
(1301823, 1301823)
 We find that Pr 4f states in PrGe is strongly hybridized withthe Pr 5d and Ge 4s-4p<missing VAR> states near the Fermi level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 4, 'f', 0],[1.0, 5, 'd', 0],[6.0, 4, 's', 0],[371.0, 43, '%', 7]

Ge
###Giant Rashba effect at the topological surface of PrGe revealing antiferromagnetic spintronics|Soma Banik,Pranab Kumar Das,Azzedine Bendounan,Ivana Vobornik,A. Arya,Nathan Beaulieu,Jun Fujii,A. Thamizhavel,P. U. Sastry,A. K. Sinha,D. M. Phase,S. K. Deb###
(1301828, 1301828)
 We find that Pr 4f states in PrGe is strongly hybridized withthe Pr 5d and Ge 4s-4p<missing VAR> states near the Fermi level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 4, 'f', 0],[4.0, 5, 'd', 0],[1.0, 4, 's', 0],[366.0, 43, '%', 7]

Pr
###Giant Rashba effect at the topological surface of PrGe revealing antiferromagnetic spintronics|Soma Banik,Pranab Kumar Das,Azzedine Bendounan,Ivana Vobornik,A. Arya,Nathan Beaulieu,Jun Fujii,A. Thamizhavel,P. U. Sastry,A. K. Sinha,D. M. Phase,S. K. Deb###
(1301963, 1301963)
 First-principles density functionalcalculations of Pr terminated surface with the anti-parallel spins shows a fairagreement with the experimental results.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 4, 'f', 3],[139.0, 5, 'd', 3],[134.0, 4, 's', 3],[231.0, 43, '%', 4]

PrGe
###Giant Rashba effect at the topological surface of PrGe revealing antiferromagnetic spintronics|Soma Banik,Pranab Kumar Das,Azzedine Bendounan,Ivana Vobornik,A. Arya,Nathan Beaulieu,Jun Fujii,A. Thamizhavel,P. U. Sastry,A. K. Sinha,D. M. Phase,S. K. Deb###
(1302030, 1302031)
 We find that the anti-parallel spinsare strongly coupled to the lattice such that the PrGe system behaves like weakferromagnetic system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[227.0, 4, 'f', 4],[206.0, 5, 'd', 4],[201.0, 4, 's', 4],[163.0, 43, '%', 3]

PrGe
###Giant Rashba effect at the topological surface of PrGe revealing antiferromagnetic spintronics|Soma Banik,Pranab Kumar Das,Azzedine Bendounan,Ivana Vobornik,A. Arya,Nathan Beaulieu,Jun Fujii,A. Thamizhavel,P. U. Sastry,A. K. Sinha,D. M. Phase,S. K. Deb###
(1302116, 1302117)
 Analysis of the energy dispersion curves at differentmagnetic phases showed that there is a competition between theDzyaloshinsky-Moriya interaction and the exchange interaction which gives riseto the magnetic ordering in PrGe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[313.0, 4, 'f', 5],[292.0, 5, 'd', 5],[287.0, 4, 's', 5],[77.0, 43, '%', 2]

(La0.3Sr0.7)
###Strong spin-orbit coupling and magnetism in (111) (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35})$/SrTiO$_3$|V. V. Bal,Z. Huang,K. Han,Ariando,T. Venkatesan,V. Chandrasekhar###
(1302283, 1302288)
Strong spin-orbit coupling and magnetism in (111) (La0.3Sr0.7)(Al0.65Ta0.35)/SrTiO3.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(Al0.65Ta0.35)
###Strong spin-orbit coupling and magnetism in (111) (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35})$/SrTiO$_3$|V. V. Bal,Z. Huang,K. Han,Ariando,T. Venkatesan,V. Chandrasekhar###
(1302289, 1302294)
Strong spin-orbit coupling and magnetism in (111) (La0.3Sr0.7)(Al0.65Ta0.35)/SrTiO3.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0.65,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.35,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Strong spin-orbit coupling and magnetism in (111) (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35})$/SrTiO$_3$|V. V. Bal,Z. Huang,K. Han,Ariando,T. Venkatesan,V. Chandrasekhar###
(1302296, 1302299)
Strong spin-orbit coupling and magnetism in (111) (La0.3Sr0.7)(Al0.65Ta0.35)/SrTiO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Strong spin-orbit coupling and magnetism in (111) (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35})$/SrTiO$_3$|V. V. Bal,Z. Huang,K. Han,Ariando,T. Venkatesan,V. Chandrasekhar###
(1302401, 1302401)
In the case of heterointerfaces based on SrTiO3, many of these phenomena canbe effectively tuned by using an electric gate, due to the large dielectricconstant of SrTiO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Strong spin-orbit coupling and magnetism in (111) (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35})$/SrTiO$_3$|V. V. Bal,Z. Huang,K. Han,Ariando,T. Venkatesan,V. Chandrasekhar###
(1302415, 1302418)
In the case of heterointerfaces based on SrTiO3, many of these phenomena canbe effectively tuned by using an electric gate, due to the large dielectricconstant of SrTiO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Strong spin-orbit coupling and magnetism in (111) (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35})$/SrTiO$_3$|V. V. Bal,Z. Huang,K. Han,Ariando,T. Venkatesan,V. Chandrasekhar###
(1302464, 1302467)
In the case of heterointerfaces based on SrTiO3, many of these phenomena canbe effectively tuned by using an electric gate, due to the large dielectricconstant of SrTiO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Strong spin-orbit coupling and magnetism in (111) (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35})$/SrTiO$_3$|V. V. Bal,Z. Huang,K. Han,Ariando,T. Venkatesan,V. Chandrasekhar###
(1302550, 1302550)
 In this work, we usemagnetoresistance to study the evolution of spin-orbit interaction andmagnetism in a new system, (111) oriented(La0.3Sr0.7)(Al0.65Ta0.35)/SrTiO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(La0.3Sr0.7)
###Strong spin-orbit coupling and magnetism in (111) (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35})$/SrTiO$_3$|V. V. Bal,Z. Huang,K. Han,Ariando,T. Venkatesan,V. Chandrasekhar###
(1302601, 1302606)
 In this work, we usemagnetoresistance to study the evolution of spin-orbit interaction andmagnetism in a new system, (111) oriented(La0.3Sr0.7)(Al0.65Ta0.35)/SrTiO3.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(Al0.65Ta0.35)
###Strong spin-orbit coupling and magnetism in (111) (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35})$/SrTiO$_3$|V. V. Bal,Z. Huang,K. Han,Ariando,T. Venkatesan,V. Chandrasekhar###
(1302607, 1302612)
 In this work, we usemagnetoresistance to study the evolution of spin-orbit interaction andmagnetism in a new system, (111) oriented(La0.3Sr0.7)(Al0.65Ta0.35)/SrTiO3.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0.65,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.35,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Strong spin-orbit coupling and magnetism in (111) (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35})$/SrTiO$_3$|V. V. Bal,Z. Huang,K. Han,Ariando,T. Venkatesan,V. Chandrasekhar###
(1302614, 1302617)
 In this work, we usemagnetoresistance to study the evolution of spin-orbit interaction andmagnetism in a new system, (111) oriented(La0.3Sr0.7)(Al0.65Ta0.35)/SrTiO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Strong spin-orbit coupling and magnetism in (111) (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35})$/SrTiO$_3$|V. V. Bal,Z. Huang,K. Han,Ariando,T. Venkatesan,V. Chandrasekhar###
(1302620, 1302620)
 At more positivevalues of the gate voltage, which correspond to high carrier densities, we findthat transport is multiband, and dominated by high mobility carriers with atendency towards weak localization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Strong spin-orbit coupling and magnetism in (111) (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35})$/SrTiO$_3$|V. V. Bal,Z. Huang,K. Han,Ariando,T. Venkatesan,V. Chandrasekhar###
(1302691, 1302691)
 At more negative gate voltages, the carrierdensity is reduced, the high mobility bands are depopulated, and weakantilocalization effects begin to dominate, indicating that spin-orbitinteraction becomes stronger.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Strong spin-orbit coupling and magnetism in (111) (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35})$/SrTiO$_3$|V. V. Bal,Z. Huang,K. Han,Ariando,T. Venkatesan,V. Chandrasekhar###
(1302759, 1302759)
 At millikelvin temperatures, and gate voltagescorresponding to the strong spin-orbit regime, we observe hysteresis inmagnetoresistance, indicative of ferromagnetism in the system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(La0.3Sr0.7)
###Strong spin-orbit coupling and magnetism in (111) (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35})$/SrTiO$_3$|V. V. Bal,Z. Huang,K. Han,Ariando,T. Venkatesan,V. Chandrasekhar###
(1302831, 1302836)
 Our resultssuggest that in the (111)(La0.3Sr0.7)(Al0.65Ta0.35)/SrTiO3 system, low mobilitycarriers which experience strong spin-orbit interactions participate increating magnetic order in the system.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(Al0.65Ta0.35)
###Strong spin-orbit coupling and magnetism in (111) (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35})$/SrTiO$_3$|V. V. Bal,Z. Huang,K. Han,Ariando,T. Venkatesan,V. Chandrasekhar###
(1302837, 1302842)
 Our resultssuggest that in the (111)(La0.3Sr0.7)(Al0.65Ta0.35)/SrTiO3 system, low mobilitycarriers which experience strong spin-orbit interactions participate increating magnetic order in the system.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0.65,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.35,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Strong spin-orbit coupling and magnetism in (111) (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35})$/SrTiO$_3$|V. V. Bal,Z. Huang,K. Han,Ariando,T. Venkatesan,V. Chandrasekhar###
(1302844, 1302847)
 Our resultssuggest that in the (111)(La0.3Sr0.7)(Al0.65Ta0.35)/SrTiO3 system, low mobilitycarriers which experience strong spin-orbit interactions participate increating magnetic order in the system.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co/Cu
###Structure and Giant Magnetoresistance of Electrodeposited Co/Cu Multilayers Prepared by Two-Pulse (G/P) and Three-Pulse (G/P/G) Plating|N. Rajasekaran,L. Pogány,Á. Révész,B. G. Tóth,S. Mohan,L. Péter,I. Bakonyi###
(1302909, 1302911)
Structure and Giant Magnetoresistance of Electrodeposited Co/Cu Multilayers Prepared by Two-Pulse (G<missing VAR>/P) and Three-Pulse (G<missing VAR>/P/G) Plating.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[147.0, 0.5, 'nm', 3],[150.0, 6, 'nm', 3],[384.0, 6, 'nm', 5]

P
###Structure and Giant Magnetoresistance of Electrodeposited Co/Cu Multilayers Prepared by Two-Pulse (G/P) and Three-Pulse (G/P/G) Plating|N. Rajasekaran,L. Pogány,Á. Révész,B. G. Tóth,S. Mohan,L. Péter,I. Bakonyi###
(1302926, 1302926)
Structure and Giant Magnetoresistance of Electrodeposited Co/Cu Multilayers Prepared by Two-Pulse (G<missing VAR>/P) and Three-Pulse (G<missing VAR>/P/G) Plating.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 0.5, 'nm', 3],[135.0, 6, 'nm', 3],[369.0, 6, 'nm', 5]

P
###Structure and Giant Magnetoresistance of Electrodeposited Co/Cu Multilayers Prepared by Two-Pulse (G/P) and Three-Pulse (G/P/G) Plating|N. Rajasekaran,L. Pogány,Á. Révész,B. G. Tóth,S. Mohan,L. Péter,I. Bakonyi###
(1302938, 1302938)
Structure and Giant Magnetoresistance of Electrodeposited Co/Cu Multilayers Prepared by Two-Pulse (G<missing VAR>/P) and Three-Pulse (G<missing VAR>/P/G) Plating.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 0.5, 'nm', 3],[123.0, 6, 'nm', 3],[357.0, 6, 'nm', 5]

Co/Cu
###Structure and Giant Magnetoresistance of Electrodeposited Co/Cu Multilayers Prepared by Two-Pulse (G/P) and Three-Pulse (G/P/G) Plating|N. Rajasekaran,L. Pogány,Á. Révész,B. G. Tóth,S. Mohan,L. Péter,I. Bakonyi###
(1302966, 1302968)
 The giant magnetoresistance (GMR) was investigated for electrodeposited Co/Cumultilayers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[90.0, 0.5, 'nm', 2],[93.0, 6, 'nm', 2],[327.0, 6, 'nm', 4]

In
###Structure and Giant Magnetoresistance of Electrodeposited Co/Cu Multilayers Prepared by Two-Pulse (G/P) and Three-Pulse (G/P/G) Plating|N. Rajasekaran,L. Pogány,Á. Révész,B. G. Tóth,S. Mohan,L. Péter,I. Bakonyi###
(1302974, 1302974)
 In order to better understand the formation of individual layersand their influence on GMR, multilayers produced by two different depositionstrategies were compared.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 0.5, 'nm', 1],[87.0, 6, 'nm', 1],[321.0, 6, 'nm', 3]

Cu
###Structure and Giant Magnetoresistance of Electrodeposited Co/Cu Multilayers Prepared by Two-Pulse (G/P) and Three-Pulse (G/P/G) Plating|N. Rajasekaran,L. Pogány,Á. Révész,B. G. Tóth,S. Mohan,L. Péter,I. Bakonyi###
(1303041, 1303041)
 One series of Co(2 nm)/Cu(t<missing VAR>Cu) multilayers with t<missing VAR>Curanging from 0.5 nm to 6 nm was produced with the conventional two-pulseplating by using a galvanostatic/potentiostatic (G<missing VAR>/P) pulse combination for themagnetic/non-magnetic layer deposition, respectively, whereby the Cu layerdeposition was carried out at the electrochemically optimized potential.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 0.5, 'nm', 0],[20.0, 6, 'nm', 0],[254.0, 6, 'nm', 2]

Cu
###Structure and Giant Magnetoresistance of Electrodeposited Co/Cu Multilayers Prepared by Two-Pulse (G/P) and Three-Pulse (G/P/G) Plating|N. Rajasekaran,L. Pogány,Á. Révész,B. G. Tóth,S. Mohan,L. Péter,I. Bakonyi###
(1303044, 1303044)
 One series of Co(2 nm)/Cu(t<missing VAR>Cu) multilayers with t<missing VAR>Curanging from 0.5 nm to 6 nm was produced with the conventional two-pulseplating by using a galvanostatic/potentiostatic (G<missing VAR>/P) pulse combination for themagnetic/non-magnetic layer deposition, respectively, whereby the Cu layerdeposition was carried out at the electrochemically optimized potential.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 0.5, 'nm', 0],[17.0, 6, 'nm', 0],[251.0, 6, 'nm', 2]

Cu
###Structure and Giant Magnetoresistance of Electrodeposited Co/Cu Multilayers Prepared by Two-Pulse (G/P) and Three-Pulse (G/P/G) Plating|N. Rajasekaran,L. Pogány,Á. Révész,B. G. Tóth,S. Mohan,L. Péter,I. Bakonyi###
(1303052, 1303052)
 One series of Co(2 nm)/Cu(t<missing VAR>Cu) multilayers with t<missing VAR>Curanging from 0.5 nm to 6 nm was produced with the conventional two-pulseplating by using a galvanostatic/potentiostatic (G<missing VAR>/P) pulse combination for themagnetic/non-magnetic layer deposition, respectively, whereby the Cu layerdeposition was carried out at the electrochemically optimized potential.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 0.5, 'nm', 0],[9.0, 6, 'nm', 0],[243.0, 6, 'nm', 2]

P
###Structure and Giant Magnetoresistance of Electrodeposited Co/Cu Multilayers Prepared by Two-Pulse (G/P) and Three-Pulse (G/P/G) Plating|N. Rajasekaran,L. Pogány,Á. Révész,B. G. Tóth,S. Mohan,L. Péter,I. Bakonyi###
(1303093, 1303093)
 One series of Co(2 nm)/Cu(t<missing VAR>Cu) multilayers with t<missing VAR>Curanging from 0.5 nm to 6 nm was produced with the conventional two-pulseplating by using a galvanostatic/potentiostatic (G<missing VAR>/P) pulse combination for themagnetic/non-magnetic layer deposition, respectively, whereby the Cu layerdeposition was carried out at the electrochemically optimized potential.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 0.5, 'nm', 0],[32.0, 6, 'nm', 0],[202.0, 6, 'nm', 2]

Cu
###Structure and Giant Magnetoresistance of Electrodeposited Co/Cu Multilayers Prepared by Two-Pulse (G/P) and Three-Pulse (G/P/G) Plating|N. Rajasekaran,L. Pogány,Á. Révész,B. G. Tóth,S. Mohan,L. Péter,I. Bakonyi###
(1303123, 1303123)
 One series of Co(2 nm)/Cu(t<missing VAR>Cu) multilayers with t<missing VAR>Curanging from 0.5 nm to 6 nm was produced with the conventional two-pulseplating by using a galvanostatic/potentiostatic (G<missing VAR>/P) pulse combination for themagnetic/non-magnetic layer deposition, respectively, whereby the Cu layerdeposition was carried out at the electrochemically optimized potential.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 0.5, 'nm', 0],[62.0, 6, 'nm', 0],[172.0, 6, 'nm', 2]

Cu
###Structure and Giant Magnetoresistance of Electrodeposited Co/Cu Multilayers Prepared by Two-Pulse (G/P) and Three-Pulse (G/P/G) Plating|N. Rajasekaran,L. Pogány,Á. Révész,B. G. Tóth,S. Mohan,L. Péter,I. Bakonyi###
(1303157, 1303157)
Another Co(2 nm)/Cu(t<missing VAR>Cu) multilayer series with the same t<missing VAR>Cu range was preparedwith the help of a G<missing VAR>/P/G<missing VAR> pulse combination.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 0.5, 'nm', 1],[96.0, 6, 'nm', 1],[138.0, 6, 'nm', 1]

Cu
###Structure and Giant Magnetoresistance of Electrodeposited Co/Cu Multilayers Prepared by Two-Pulse (G/P) and Three-Pulse (G/P/G) Plating|N. Rajasekaran,L. Pogány,Á. Révész,B. G. Tóth,S. Mohan,L. Péter,I. Bakonyi###
(1303160, 1303160)
Another Co(2 nm)/Cu(t<missing VAR>Cu) multilayer series with the same t<missing VAR>Cu range was preparedwith the help of a G<missing VAR>/P/G<missing VAR> pulse combination.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 0.5, 'nm', 1],[99.0, 6, 'nm', 1],[135.0, 6, 'nm', 1]

Cu
###Structure and Giant Magnetoresistance of Electrodeposited Co/Cu Multilayers Prepared by Two-Pulse (G/P) and Three-Pulse (G/P/G) Plating|N. Rajasekaran,L. Pogány,Á. Révész,B. G. Tóth,S. Mohan,L. Péter,I. Bakonyi###
(1303174, 1303174)
Another Co(2 nm)/Cu(t<missing VAR>Cu) multilayer series with the same t<missing VAR>Cu range was preparedwith the help of a G<missing VAR>/P/G<missing VAR> pulse combination.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 0.5, 'nm', 1],[113.0, 6, 'nm', 1],[121.0, 6, 'nm', 1]

P
###Structure and Giant Magnetoresistance of Electrodeposited Co/Cu Multilayers Prepared by Two-Pulse (G/P) and Three-Pulse (G/P/G) Plating|N. Rajasekaran,L. Pogány,Á. Révész,B. G. Tóth,S. Mohan,L. Péter,I. Bakonyi###
(1303195, 1303195)
Another Co(2 nm)/Cu(t<missing VAR>Cu) multilayer series with the same t<missing VAR>Cu range was preparedwith the help of a G<missing VAR>/P/G<missing VAR> pulse combination.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 0.5, 'nm', 1],[134.0, 6, 'nm', 1],[100.0, 6, 'nm', 1]

In
###Structure and Giant Magnetoresistance of Electrodeposited Co/Cu Multilayers Prepared by Two-Pulse (G/P) and Three-Pulse (G/P/G) Plating|N. Rajasekaran,L. Pogány,Á. Révész,B. G. Tóth,S. Mohan,L. Péter,I. Bakonyi###
(1303204, 1303204)
 In this latter case, first abilayer of Co(2 nm)/Cu(6 nm) was deposited in each cycle as in the G<missing VAR>/P modeafter which a third G<missing VAR> pulse was applied with a small anodic current to dissolvepart of the 6 nm thick Cu layer in order to ensure the targeted t<missing VAR>Cu value.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 0.5, 'nm', 2],[143.0, 6, 'nm', 2],[91.0, 6, 'nm', 0]

P
###Structure and Giant Magnetoresistance of Electrodeposited Co/Cu Multilayers Prepared by Two-Pulse (G/P) and Three-Pulse (G/P/G) Plating|N. Rajasekaran,L. Pogány,Á. Révész,B. G. Tóth,S. Mohan,L. Péter,I. Bakonyi###
(1303254, 1303254)
 In this latter case, first abilayer of Co(2 nm)/Cu(6 nm) was deposited in each cycle as in the G<missing VAR>/P modeafter which a third G<missing VAR> pulse was applied with a small anodic current to dissolvepart of the 6 nm thick Cu layer in order to ensure the targeted t<missing VAR>Cu value.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[196.0, 0.5, 'nm', 2],[193.0, 6, 'nm', 2],[41.0, 6, 'nm', 0]

Cu
###Structure and Giant Magnetoresistance of Electrodeposited Co/Cu Multilayers Prepared by Two-Pulse (G/P) and Three-Pulse (G/P/G) Plating|N. Rajasekaran,L. Pogány,Á. Révész,B. G. Tóth,S. Mohan,L. Péter,I. Bakonyi###
(1303299, 1303299)
 In this latter case, first abilayer of Co(2 nm)/Cu(6 nm) was deposited in each cycle as in the G<missing VAR>/P modeafter which a third G<missing VAR> pulse was applied with a small anodic current to dissolvepart of the 6 nm thick Cu layer in order to ensure the targeted t<missing VAR>Cu value.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[241.0, 0.5, 'nm', 2],[238.0, 6, 'nm', 2],[4.0, 6, 'nm', 0]

Cu
###Structure and Giant Magnetoresistance of Electrodeposited Co/Cu Multilayers Prepared by Two-Pulse (G/P) and Three-Pulse (G/P/G) Plating|N. Rajasekaran,L. Pogány,Á. Révész,B. G. Tóth,S. Mohan,L. Péter,I. Bakonyi###
(1303316, 1303316)
 In this latter case, first abilayer of Co(2 nm)/Cu(6 nm) was deposited in each cycle as in the G<missing VAR>/P modeafter which a third G<missing VAR> pulse was applied with a small anodic current to dissolvepart of the 6 nm thick Cu layer in order to ensure the targeted t<missing VAR>Cu value.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[258.0, 0.5, 'nm', 2],[255.0, 6, 'nm', 2],[21.0, 6, 'nm', 0]

P
###Structure and Giant Magnetoresistance of Electrodeposited Co/Cu Multilayers Prepared by Two-Pulse (G/P) and Three-Pulse (G/P/G) Plating|N. Rajasekaran,L. Pogány,Á. Révész,B. G. Tóth,S. Mohan,L. Péter,I. Bakonyi###
(1303342, 1303342)
 Thecomparison of the two series revealed that the G<missing VAR>/P/G<missing VAR> pulse combination yieldsmultilayers for which GMR can be obtained even at such low nominal Cu layerthicknesses where G<missing VAR>/P multilayers already exhibit bulk-like anisotropicmagnetoresistance only.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[284.0, 0.5, 'nm', 3],[281.0, 6, 'nm', 3],[47.0, 6, 'nm', 1]

Cu
###Structure and Giant Magnetoresistance of Electrodeposited Co/Cu Multilayers Prepared by Two-Pulse (G/P) and Three-Pulse (G/P/G) Plating|N. Rajasekaran,L. Pogány,Á. Révész,B. G. Tóth,S. Mohan,L. Péter,I. Bakonyi###
(1303379, 1303379)
 Thecomparison of the two series revealed that the G<missing VAR>/P/G<missing VAR> pulse combination yieldsmultilayers for which GMR can be obtained even at such low nominal Cu layerthicknesses where G<missing VAR>/P multilayers already exhibit bulk-like anisotropicmagnetoresistance only.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[321.0, 0.5, 'nm', 3],[318.0, 6, 'nm', 3],[84.0, 6, 'nm', 1]

P
###Structure and Giant Magnetoresistance of Electrodeposited Co/Cu Multilayers Prepared by Two-Pulse (G/P) and Three-Pulse (G/P/G) Plating|N. Rajasekaran,L. Pogány,Á. Révész,B. G. Tóth,S. Mohan,L. Péter,I. Bakonyi###
(1303390, 1303390)
 Thecomparison of the two series revealed that the G<missing VAR>/P/G<missing VAR> pulse combination yieldsmultilayers for which GMR can be obtained even at such low nominal Cu layerthicknesses where G<missing VAR>/P multilayers already exhibit bulk-like anisotropicmagnetoresistance only.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[332.0, 0.5, 'nm', 3],[329.0, 6, 'nm', 3],[95.0, 6, 'nm', 1]

Cu
###Structure and Giant Magnetoresistance of Electrodeposited Co/Cu Multilayers Prepared by Two-Pulse (G/P) and Three-Pulse (G/P/G) Plating|N. Rajasekaran,L. Pogány,Á. Révész,B. G. Tóth,S. Mohan,L. Péter,I. Bakonyi###
(1303530, 1303530)
 The results of multilayerchemical analysis revealed that mainly an increased Cu content of the magneticlayer is responsible for the onset of SPM<missing VAR> regions in the form of Cosegregations in the G<missing VAR>/P/G<missing VAR> multilayers with small Cu layer thicknesses.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[472.0, 0.5, 'nm', 5],[469.0, 6, 'nm', 5],[235.0, 6, 'nm', 3]

SP
###Structure and Giant Magnetoresistance of Electrodeposited Co/Cu Multilayers Prepared by Two-Pulse (G/P) and Three-Pulse (G/P/G) Plating|N. Rajasekaran,L. Pogány,Á. Révész,B. G. Tóth,S. Mohan,L. Péter,I. Bakonyi###
(1303555, 1303556)
 The results of multilayerchemical analysis revealed that mainly an increased Cu content of the magneticlayer is responsible for the onset of SPM<missing VAR> regions in the form of Cosegregations in the G<missing VAR>/P/G<missing VAR> multilayers with small Cu layer thicknesses.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[497.0, 0.5, 'nm', 5],[494.0, 6, 'nm', 5],[260.0, 6, 'nm', 3]

Co
###Structure and Giant Magnetoresistance of Electrodeposited Co/Cu Multilayers Prepared by Two-Pulse (G/P) and Three-Pulse (G/P/G) Plating|N. Rajasekaran,L. Pogány,Á. Révész,B. G. Tóth,S. Mohan,L. Péter,I. Bakonyi###
(1303569, 1303569)
 The results of multilayerchemical analysis revealed that mainly an increased Cu content of the magneticlayer is responsible for the onset of SPM<missing VAR> regions in the form of Cosegregations in the G<missing VAR>/P/G<missing VAR> multilayers with small Cu layer thicknesses.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[511.0, 0.5, 'nm', 5],[508.0, 6, 'nm', 5],[274.0, 6, 'nm', 3]

P
###Structure and Giant Magnetoresistance of Electrodeposited Co/Cu Multilayers Prepared by Two-Pulse (G/P) and Three-Pulse (G/P/G) Plating|N. Rajasekaran,L. Pogány,Á. Révész,B. G. Tóth,S. Mohan,L. Péter,I. Bakonyi###
(1303580, 1303580)
 The results of multilayerchemical analysis revealed that mainly an increased Cu content of the magneticlayer is responsible for the onset of SPM<missing VAR> regions in the form of Cosegregations in the G<missing VAR>/P/G<missing VAR> multilayers with small Cu layer thicknesses.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[522.0, 0.5, 'nm', 5],[519.0, 6, 'nm', 5],[285.0, 6, 'nm', 3]

Cu
###Structure and Giant Magnetoresistance of Electrodeposited Co/Cu Multilayers Prepared by Two-Pulse (G/P) and Three-Pulse (G/P/G) Plating|N. Rajasekaran,L. Pogány,Á. Révész,B. G. Tóth,S. Mohan,L. Péter,I. Bakonyi###
(1303590, 1303590)
 The results of multilayerchemical analysis revealed that mainly an increased Cu content of the magneticlayer is responsible for the onset of SPM<missing VAR> regions in the form of Cosegregations in the G<missing VAR>/P/G<missing VAR> multilayers with small Cu layer thicknesses.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[532.0, 0.5, 'nm', 5],[529.0, 6, 'nm', 5],[295.0, 6, 'nm', 3]

II
###Electronic properties of type-II Weyl semimetal WTe$_2$. A review perspective|P. K. Das,D. Di Sante,F. Cilento,C. Bigi,D. Kopic,D. Soranzio,A. Sterzi,J. A. Krieger,I. Vobornik,J. Fujii,T. Okuda,V. N. Strocov,M. B. H. Breese,F. Parmigiani,G. Rossi,S. Picozzi,R. Thomale,G. Sangiovanni,R. J. Cava,G. Panaccione###
(1303613, 1303614)
Electronic properties of type-II Weyl semimetal WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Electronic properties of type-II Weyl semimetal WTe$_2$. A review perspective|P. K. Das,D. Di Sante,F. Cilento,C. Bigi,D. Kopic,D. Soranzio,A. Sterzi,J. A. Krieger,I. Vobornik,J. Fujii,T. Okuda,V. N. Strocov,M. B. H. Breese,F. Parmigiani,G. Rossi,S. Picozzi,R. Thomale,G. Sangiovanni,R. J. Cava,G. Panaccione###
(1303620, 1303622)
Electronic properties of type-II Weyl semimetal WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Electronic properties of type-II Weyl semimetal WTe$_2$. A review perspective|P. K. Das,D. Di Sante,F. Cilento,C. Bigi,D. Kopic,D. Soranzio,A. Sterzi,J. A. Krieger,I. Vobornik,J. Fujii,T. Okuda,V. N. Strocov,M. B. H. Breese,F. Parmigiani,G. Rossi,S. Picozzi,R. Thomale,G. Sangiovanni,R. J. Cava,G. Panaccione###
(1304119, 1304119)
 In this review, we recapitulate some of theoutstanding properties of WTe2, namely, its non-saturating titanicmagnetoresistance due to perfect electron and hole carrier balance up to a veryhigh magnetic field observed for the very first time.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Electronic properties of type-II Weyl semimetal WTe$_2$. A review perspective|P. K. Das,D. Di Sante,F. Cilento,C. Bigi,D. Kopic,D. Soranzio,A. Sterzi,J. A. Krieger,I. Vobornik,J. Fujii,T. Okuda,V. N. Strocov,M. B. H. Breese,F. Parmigiani,G. Rossi,S. Picozzi,R. Thomale,G. Sangiovanni,R. J. Cava,G. Panaccione###
(1304143, 1304145)
 In this review, we recapitulate some of theoutstanding properties of WTe2, namely, its non-saturating titanicmagnetoresistance due to perfect electron and hole carrier balance up to a veryhigh magnetic field observed for the very first time.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(SOC)
###Anisotropic Magnetoresistance in Multiband Systems: 2DEGs and Polar Metals at Oxide Interfaces|Nazim Boudjada,Ilia Khait,Arun Paramekanti###
(1304422, 1304426)
 Motivated by experiments onsuch systems, we theoretically study magnetotransport in t2g orbitalsystems, using Hamiltonians which include atomic spin-orbit coupling (SOC) andbroken inversion symmetry, for both square symmetry (001) and hexagonalsymmetry (111) 2DEGs.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[182.0, 2, 'DEGs', 3],[101.0, 2, 'DEGs', 1],[34.0, 2, 'DEGs', 0],[137.0, 2, 'DEG', 2],[257.0, 2, 'DEG', 4],[321.0, 2, 'DEG', 5],[351.0, 2, 'D', 5],[433.0, 2, 'DEGs', 6]

In
###Anisotropic Magnetoresistance in Multiband Systems: 2DEGs and Polar Metals at Oxide Interfaces|Nazim Boudjada,Ilia Khait,Arun Paramekanti###
(1304667, 1304667)
 In contrast, AMR in the (111) 2DEG typically features a singlecos(2vartheta) harmonic, with the angle-averaged magnetoresistance beinghighly tunable by a symmetry-allowed trigonal distortion.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[427.0, 2, 'DEGs', 7],[346.0, 2, 'DEGs', 5],[207.0, 2, 'DEGs', 4],[104.0, 2, 'DEG', 2],[16.0, 2, 'DEG', 0],[80.0, 2, 'DEG', 1],[110.0, 2, 'D', 1],[192.0, 2, 'DEGs', 2]

SrTiO3
###Anisotropic Magnetoresistance in Multiband Systems: 2DEGs and Polar Metals at Oxide Interfaces|Nazim Boudjada,Ilia Khait,Arun Paramekanti###
(1304865, 1304868)
 Our results are in qualitative agreement withexperiments from various groups for 2DEGs at the SrTiO3 surface or theLaAlO3-SrTiO3 interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[625.0, 2, 'DEGs', 9],[544.0, 2, 'DEGs', 7],[405.0, 2, 'DEGs', 6],[302.0, 2, 'DEG', 4],[182.0, 2, 'DEG', 2],[118.0, 2, 'DEG', 1],[88.0, 2, 'D', 1],[6.0, 2, 'DEGs', 0]

LaAlO3
###Anisotropic Magnetoresistance in Multiband Systems: 2DEGs and Polar Metals at Oxide Interfaces|Nazim Boudjada,Ilia Khait,Arun Paramekanti###
(1304877, 1304880)
 Our results are in qualitative agreement withexperiments from various groups for 2DEGs at the SrTiO3 surface or theLaAlO3-SrTiO3 interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[637.0, 2, 'DEGs', 9],[556.0, 2, 'DEGs', 7],[417.0, 2, 'DEGs', 6],[314.0, 2, 'DEG', 4],[194.0, 2, 'DEG', 2],[130.0, 2, 'DEG', 1],[100.0, 2, 'D', 1],[18.0, 2, 'DEGs', 0]

SrTiO3
###Anisotropic Magnetoresistance in Multiband Systems: 2DEGs and Polar Metals at Oxide Interfaces|Nazim Boudjada,Ilia Khait,Arun Paramekanti###
(1304882, 1304885)
 Our results are in qualitative agreement withexperiments from various groups for 2DEGs at the SrTiO3 surface or theLaAlO3-SrTiO3 interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[642.0, 2, 'DEGs', 9],[561.0, 2, 'DEGs', 7],[422.0, 2, 'DEGs', 6],[319.0, 2, 'DEG', 4],[199.0, 2, 'DEG', 2],[135.0, 2, 'DEG', 1],[105.0, 2, 'D', 1],[23.0, 2, 'DEGs', 0]

La2-xSr
###Single-parameter scaling in the magnetoresistance of optimally doped La$_{2-x}$Sr$_{x}$CuO$_4$|Christian Boyd,Philip W. Phillips###
(1304916, 1304920)
Single-parameter scaling in the magnetoresistance of optimally doped La2-xSrx<missing VAR>CuO4.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

CuO4
###Single-parameter scaling in the magnetoresistance of optimally doped La$_{2-x}$Sr$_{x}$CuO$_4$|Christian Boyd,Philip W. Phillips###
(1304922, 1304924)
Single-parameter scaling in the magnetoresistance of optimally doped La2-xSrx<missing VAR>CuO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La2-xSr
###Single-parameter scaling in the magnetoresistance of optimally doped La$_{2-x}$Sr$_{x}$CuO$_4$|Christian Boyd,Philip W. Phillips###
(1304948, 1304952)
 We show that the recent magnetoresistance data on thin-filmLa2-xSrx<missing VAR>CuO4 (L<missing VAR>SCO) in strong magnetic fields (B) obeys asingle-parameter scaling of the form MR(B,T)f(muH(T)B), wheremuH-1(T)sim T<missing VAR>alpha (1lealphale2), from T<missing VAR>180K untilT<missing VAR>sim20K, at which point the single-parameter scaling breaks down.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

CuO4
###Single-parameter scaling in the magnetoresistance of optimally doped La$_{2-x}$Sr$_{x}$CuO$_4$|Christian Boyd,Philip W. Phillips###
(1304954, 1304956)
 We show that the recent magnetoresistance data on thin-filmLa2-xSrx<missing VAR>CuO4 (L<missing VAR>SCO) in strong magnetic fields (B) obeys asingle-parameter scaling of the form MR(B,T)f(muH(T)B), wheremuH-1(T)sim T<missing VAR>alpha (1lealphale2), from T<missing VAR>180K untilT<missing VAR>sim20K, at which point the single-parameter scaling breaks down.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Single-parameter scaling in the magnetoresistance of optimally doped La$_{2-x}$Sr$_{x}$CuO$_4$|Christian Boyd,Philip W. Phillips###
(1304962, 1304962)
 We show that the recent magnetoresistance data on thin-filmLa2-xSrx<missing VAR>CuO4 (L<missing VAR>SCO) in strong magnetic fields (B) obeys asingle-parameter scaling of the form MR(B,T)f(muH(T)B), wheremuH-1(T)sim T<missing VAR>alpha (1lealphale2), from T<missing VAR>180K untilT<missing VAR>sim20K, at which point the single-parameter scaling breaks down.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(B)
###Single-parameter scaling in the magnetoresistance of optimally doped La$_{2-x}$Sr$_{x}$CuO$_4$|Christian Boyd,Philip W. Phillips###
(1304973, 1304975)
 We show that the recent magnetoresistance data on thin-filmLa2-xSrx<missing VAR>CuO4 (L<missing VAR>SCO) in strong magnetic fields (B) obeys asingle-parameter scaling of the form MR(B,T)f(muH(T)B), wheremuH-1(T)sim T<missing VAR>alpha (1lealphale2), from T<missing VAR>180K untilT<missing VAR>sim20K, at which point the single-parameter scaling breaks down.
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Single-parameter scaling in the magnetoresistance of optimally doped La$_{2-x}$Sr$_{x}$CuO$_4$|Christian Boyd,Philip W. Phillips###
(1304997, 1304997)
 We show that the recent magnetoresistance data on thin-filmLa2-xSrx<missing VAR>CuO4 (L<missing VAR>SCO) in strong magnetic fields (B) obeys asingle-parameter scaling of the form MR(B,T)f(muH(T)B), wheremuH-1(T)sim T<missing VAR>alpha (1lealphale2), from T<missing VAR>180K untilT<missing VAR>sim20K, at which point the single-parameter scaling breaks down.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Single-parameter scaling in the magnetoresistance of optimally doped La$_{2-x}$Sr$_{x}$CuO$_4$|Christian Boyd,Philip W. Phillips###
(1305004, 1305004)
 We show that the recent magnetoresistance data on thin-filmLa2-xSrx<missing VAR>CuO4 (L<missing VAR>SCO) in strong magnetic fields (B) obeys asingle-parameter scaling of the form MR(B,T)f(muH(T)B), wheremuH-1(T)sim T<missing VAR>alpha (1lealphale2), from T<missing VAR>180K untilT<missing VAR>sim20K, at which point the single-parameter scaling breaks down.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Single-parameter scaling in the magnetoresistance of optimally doped La$_{2-x}$Sr$_{x}$CuO$_4$|Christian Boyd,Philip W. Phillips###
(1305008, 1305008)
 We show that the recent magnetoresistance data on thin-filmLa2-xSrx<missing VAR>CuO4 (L<missing VAR>SCO) in strong magnetic fields (B) obeys asingle-parameter scaling of the form MR(B,T)f(muH(T)B), wheremuH-1(T)sim T<missing VAR>alpha (1lealphale2), from T<missing VAR>180K untilT<missing VAR>sim20K, at which point the single-parameter scaling breaks down.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Single-parameter scaling in the magnetoresistance of optimally doped La$_{2-x}$Sr$_{x}$CuO$_4$|Christian Boyd,Philip W. Phillips###
(1305016, 1305016)
 We show that the recent magnetoresistance data on thin-filmLa2-xSrx<missing VAR>CuO4 (L<missing VAR>SCO) in strong magnetic fields (B) obeys asingle-parameter scaling of the form MR(B,T)f(muH(T)B), wheremuH-1(T)sim T<missing VAR>alpha (1lealphale2), from T<missing VAR>180K untilT<missing VAR>sim20K, at which point the single-parameter scaling breaks down.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Single-parameter scaling in the magnetoresistance of optimally doped La$_{2-x}$Sr$_{x}$CuO$_4$|Christian Boyd,Philip W. Phillips###
(1305040, 1305040)
 We show that the recent magnetoresistance data on thin-filmLa2-xSrx<missing VAR>CuO4 (L<missing VAR>SCO) in strong magnetic fields (B) obeys asingle-parameter scaling of the form MR(B,T)f(muH(T)B), wheremuH-1(T)sim T<missing VAR>alpha (1lealphale2), from T<missing VAR>180K untilT<missing VAR>sim20K, at which point the single-parameter scaling breaks down.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Single-parameter scaling in the magnetoresistance of optimally doped La$_{2-x}$Sr$_{x}$CuO$_4$|Christian Boyd,Philip W. Phillips###
(1305048, 1305048)
 We show that the recent magnetoresistance data on thin-filmLa2-xSrx<missing VAR>CuO4 (L<missing VAR>SCO) in strong magnetic fields (B) obeys asingle-parameter scaling of the form MR(B,T)f(muH(T)B), wheremuH-1(T)sim T<missing VAR>alpha (1lealphale2), from T<missing VAR>180K untilT<missing VAR>sim20K, at which point the single-parameter scaling breaks down.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe2
###Single-parameter scaling in the magnetoresistance of optimally doped La$_{2-x}$Sr$_{x}$CuO$_4$|Christian Boyd,Philip W. Phillips###
(1305131, 1305132)
 Thefunctional form of the MR is distinct from the simple quadratic-to-linearquadrature combination of temperature and magnetic field found in the optimallydoped iron superconductor BaFe2(As1-xPx)2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As1-xP
###Single-parameter scaling in the magnetoresistance of optimally doped La$_{2-x}$Sr$_{x}$CuO$_4$|Christian Boyd,Philip W. Phillips###
(1305134, 1305138)
 Thefunctional form of the MR is distinct from the simple quadratic-to-linearquadrature combination of temperature and magnetic field found in the optimallydoped iron superconductor BaFe2(As1-xPx)2.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

SCO
###Single-parameter scaling in the magnetoresistance of optimally doped La$_{2-x}$Sr$_{x}$CuO$_4$|Christian Boyd,Philip W. Phillips###
(1305164, 1305166)
 Further,low-temperature departure of the MR in L<missing VAR>SCO from its high-temperature scalinglaw leads us to conclude that the MR curve collapse is not the result ofquantum critical scaling.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Single-parameter scaling in the magnetoresistance of optimally doped La$_{2-x}$Sr$_{x}$CuO$_4$|Christian Boyd,Philip W. Phillips###
(1305356, 1305356)
 More generally, we find a low-temperature, high-fieldregion where the resistivity is simultaneously T<missing VAR> and B linear when multiplemetallic components are present.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SCO
###Single-parameter scaling in the magnetoresistance of optimally doped La$_{2-x}$Sr$_{x}$CuO$_4$|Christian Boyd,Philip W. Phillips###
(1305498, 1305500)
Using the latter, we examine the applicability of classical effective mediumtheory to the MR in L<missing VAR>SCO and compare calculated MR curves with the experimentaldata.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe3Sn2
###Magnetotransport as diagnostic of spin reorientation: kagome ferromagnet as a case study|Neeraj Kumar,Y. Soh,Yihao Wang,Y. Xiong###
(1305666, 1305669)
 Fe3Sn2 is a kagome ferromagnetwith an onset of ferromagnetism below 650 K, and undergoes a spin reorientationnear 150 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 650, 'K', 0],[37.0, 150, 'K', 0],[302.0, 360, 'K', 4],[305.0, 2, 'K', 4],[321.0, 120, 'K', 4],[462.0, 40, 'K', 7]

Fe3Sn2
###Magnetotransport as diagnostic of spin reorientation: kagome ferromagnet as a case study|Neeraj Kumar,Y. Soh,Yihao Wang,Y. Xiong###
(1305725, 1305728)
 While it is known that the moments in Fe3Sn2 point perpendicular tothe kagome plane at high temperatures and parallel to the kagome plane at lowtemperatures, how the distribution of the magnetic domains in the two differentspin orientations evolve throughout the spin reorientation is not well known.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 650, 'K', 1],[19.0, 150, 'K', 1],[243.0, 360, 'K', 3],[246.0, 2, 'K', 3],[262.0, 120, 'K', 3],[403.0, 40, 'K', 6]

In
###Magnetotransport as diagnostic of spin reorientation: kagome ferromagnet as a case study|Neeraj Kumar,Y. Soh,Yihao Wang,Y. Xiong###
(1305873, 1305873)
 In this paper, we have examinedthe spin reorientation by using anisotropic magnetoresistivity in detail,exploiting the dependence of the resistivity on the direction betweenmagnetization and applied current.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[182.0, 650, 'K', 3],[167.0, 150, 'K', 3],[98.0, 360, 'K', 1],[101.0, 2, 'K', 1],[117.0, 120, 'K', 1],[258.0, 40, 'K', 4]

In
###Magnetotransport as diagnostic of spin reorientation: kagome ferromagnet as a case study|Neeraj Kumar,Y. Soh,Yihao Wang,Y. Xiong###
(1306114, 1306114)
 In contrast, we observe an electronictransition around 40 K, hitherto unreported, and reflected in both thezero-field resistivity and anisotropic resistivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[423.0, 650, 'K', 7],[408.0, 150, 'K', 7],[143.0, 360, 'K', 3],[140.0, 2, 'K', 3],[124.0, 120, 'K', 3],[17.0, 40, 'K', 0]

Fe
###High-temperature intrinsic ferromagnetism in heavily Fe-doped GaAs layers|A. V. Kudrin,V. P. Lesnikov,Yu. A. Danilov,M. V. Dorokhin,O. V. Vikhrova,P. B. Demina,D. A. Pavlov,Yu. V. Usov,V. E. Milin,Yu. M. Kuznetsov,R. N. Kriukov,A. A. Konakov,N. Yu. Tabachkova###
(1306183, 1306183)
High-temperature intrinsic ferromagnetism in heavily Fe-doped GaAs layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 20, 'at', 1],[137.0, 180, 'and', 3],[138.0, 200, 'C', 3],[205.0, 250, 'C', 4],[478.0, 180, ',', 9],[480.0, 200, 'and', 9],[481.0, 250, 'C', 9],[532.0, 200, 'C', 9]

GaAs
###High-temperature intrinsic ferromagnetism in heavily Fe-doped GaAs layers|A. V. Kudrin,V. P. Lesnikov,Yu. A. Danilov,M. V. Dorokhin,O. V. Vikhrova,P. B. Demina,D. A. Pavlov,Yu. V. Usov,V. E. Milin,Yu. M. Kuznetsov,R. N. Kriukov,A. A. Konakov,N. Yu. Tabachkova###
(1306187, 1306188)
High-temperature intrinsic ferromagnetism in heavily Fe-doped GaAs layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 20, 'at', 1],[132.0, 180, 'and', 3],[133.0, 200, 'C', 3],[200.0, 250, 'C', 4],[473.0, 180, ',', 9],[475.0, 200, 'and', 9],[476.0, 250, 'C', 9],[527.0, 200, 'C', 9]

GaAsFe
###High-temperature intrinsic ferromagnetism in heavily Fe-doped GaAs layers|A. V. Kudrin,V. P. Lesnikov,Yu. A. Danilov,M. V. Dorokhin,O. V. Vikhrova,P. B. Demina,D. A. Pavlov,Yu. V. Usov,V. E. Milin,Yu. M. Kuznetsov,R. N. Kriukov,A. A. Konakov,N. Yu. Tabachkova###
(1306207, 1306209)
 The layers of a high-temperature novel GaAsFe diluted magnetic semiconductor(DMS) with an average Fe content up to 20 at.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 20, 'at', 0],[111.0, 180, 'and', 2],[112.0, 200, 'C', 2],[179.0, 250, 'C', 3],[452.0, 180, ',', 8],[454.0, 200, 'and', 8],[455.0, 250, 'C', 8],[506.0, 200, 'C', 8]

S
###High-temperature intrinsic ferromagnetism in heavily Fe-doped GaAs layers|A. V. Kudrin,V. P. Lesnikov,Yu. A. Danilov,M. V. Dorokhin,O. V. Vikhrova,P. B. Demina,D. A. Pavlov,Yu. V. Usov,V. E. Milin,Yu. M. Kuznetsov,R. N. Kriukov,A. A. Konakov,N. Yu. Tabachkova###
(1306221, 1306221)
 The layers of a high-temperature novel GaAsFe diluted magnetic semiconductor(DMS) with an average Fe content up to 20 at.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 20, 'at', 0],[99.0, 180, 'and', 2],[100.0, 200, 'C', 2],[167.0, 250, 'C', 3],[440.0, 180, ',', 8],[442.0, 200, 'and', 8],[443.0, 250, 'C', 8],[494.0, 200, 'C', 8]

Fe
###High-temperature intrinsic ferromagnetism in heavily Fe-doped GaAs layers|A. V. Kudrin,V. P. Lesnikov,Yu. A. Danilov,M. V. Dorokhin,O. V. Vikhrova,P. B. Demina,D. A. Pavlov,Yu. V. Usov,V. E. Milin,Yu. M. Kuznetsov,R. N. Kriukov,A. A. Konakov,N. Yu. Tabachkova###
(1306230, 1306230)
 The layers of a high-temperature novel GaAsFe diluted magnetic semiconductor(DMS) with an average Fe content up to 20 at.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 20, 'at', 0],[90.0, 180, 'and', 2],[91.0, 200, 'C', 2],[158.0, 250, 'C', 3],[431.0, 180, ',', 8],[433.0, 200, 'and', 8],[434.0, 250, 'C', 8],[485.0, 200, 'C', 8]

GaAs
###High-temperature intrinsic ferromagnetism in heavily Fe-doped GaAs layers|A. V. Kudrin,V. P. Lesnikov,Yu. A. Danilov,M. V. Dorokhin,O. V. Vikhrova,P. B. Demina,D. A. Pavlov,Yu. V. Usov,V. E. Milin,Yu. M. Kuznetsov,R. N. Kriukov,A. A. Konakov,N. Yu. Tabachkova###
(1306254, 1306255)
 % were grown on (001) i<missing VAR>-GaAssubstrates using a pulsed laser deposition in a vacuum.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 20, 'at', 1],[65.0, 180, 'and', 1],[66.0, 200, 'C', 1],[133.0, 250, 'C', 2],[406.0, 180, ',', 7],[408.0, 200, 'and', 7],[409.0, 250, 'C', 7],[460.0, 200, 'C', 7]

Fe
###High-temperature intrinsic ferromagnetism in heavily Fe-doped GaAs layers|A. V. Kudrin,V. P. Lesnikov,Yu. A. Danilov,M. V. Dorokhin,O. V. Vikhrova,P. B. Demina,D. A. Pavlov,Yu. V. Usov,V. E. Milin,Yu. M. Kuznetsov,R. N. Kriukov,A. A. Konakov,N. Yu. Tabachkova###
(1306351, 1306351)
 The transmissionelectron microscopy (TEM) and energy-dispersive X<missing VAR>-ray spectroscopyinvestigations revealed that the conductive layers obtained at 180 and 200 Care epitaxial, do not contain any second-phase inclusions, but contain theFe-enriched columnar regions of overlapped microtwins.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 20, 'at', 2],[31.0, 180, 'and', 0],[30.0, 200, 'C', 0],[37.0, 250, 'C', 1],[310.0, 180, ',', 6],[312.0, 200, 'and', 6],[313.0, 250, 'C', 6],[364.0, 200, 'C', 6]

Fe
###High-temperature intrinsic ferromagnetism in heavily Fe-doped GaAs layers|A. V. Kudrin,V. P. Lesnikov,Yu. A. Danilov,M. V. Dorokhin,O. V. Vikhrova,P. B. Demina,D. A. Pavlov,Yu. V. Usov,V. E. Milin,Yu. M. Kuznetsov,R. N. Kriukov,A. A. Konakov,N. Yu. Tabachkova###
(1306399, 1306399)
 The TEM investigationsof the non-conductive layer obtained at 250 C revealed the embedded coherentFe-rich clusters of GaAsFe DMS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 20, 'at', 3],[79.0, 180, 'and', 1],[78.0, 200, 'C', 1],[11.0, 250, 'C', 0],[262.0, 180, ',', 5],[264.0, 200, 'and', 5],[265.0, 250, 'C', 5],[316.0, 200, 'C', 5]

GaAsFe
###High-temperature intrinsic ferromagnetism in heavily Fe-doped GaAs layers|A. V. Kudrin,V. P. Lesnikov,Yu. A. Danilov,M. V. Dorokhin,O. V. Vikhrova,P. B. Demina,D. A. Pavlov,Yu. V. Usov,V. E. Milin,Yu. M. Kuznetsov,R. N. Kriukov,A. A. Konakov,N. Yu. Tabachkova###
(1306407, 1306409)
 The TEM investigationsof the non-conductive layer obtained at 250 C revealed the embedded coherentFe-rich clusters of GaAsFe DMS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[170.0, 20, 'at', 3],[87.0, 180, 'and', 1],[86.0, 200, 'C', 1],[19.0, 250, 'C', 0],[252.0, 180, ',', 5],[254.0, 200, 'and', 5],[255.0, 250, 'C', 5],[306.0, 200, 'C', 5]

S
###High-temperature intrinsic ferromagnetism in heavily Fe-doped GaAs layers|A. V. Kudrin,V. P. Lesnikov,Yu. A. Danilov,M. V. Dorokhin,O. V. Vikhrova,P. B. Demina,D. A. Pavlov,Yu. V. Usov,V. E. Milin,Yu. M. Kuznetsov,R. N. Kriukov,A. A. Konakov,N. Yu. Tabachkova###
(1306413, 1306413)
 The TEM investigationsof the non-conductive layer obtained at 250 C revealed the embedded coherentFe-rich clusters of GaAsFe DMS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[176.0, 20, 'at', 3],[93.0, 180, 'and', 1],[92.0, 200, 'C', 1],[25.0, 250, 'C', 0],[248.0, 180, ',', 5],[250.0, 200, 'and', 5],[251.0, 250, 'C', 5],[302.0, 200, 'C', 5]

Fe
###High-temperature intrinsic ferromagnetism in heavily Fe-doped GaAs layers|A. V. Kudrin,V. P. Lesnikov,Yu. A. Danilov,M. V. Dorokhin,O. V. Vikhrova,P. B. Demina,D. A. Pavlov,Yu. V. Usov,V. E. Milin,Yu. M. Kuznetsov,R. N. Kriukov,A. A. Konakov,N. Yu. Tabachkova###
(1306433, 1306433)
 The X<missing VAR>-ray photoelectron spectroscopyinvestigations showed that Fe atoms form chemical bonds with Ga and As atomswith almost equal probability and thus the comparable number of Fe atomssubstitute on Ga and As sites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[196.0, 20, 'at', 4],[113.0, 180, 'and', 2],[112.0, 200, 'C', 2],[45.0, 250, 'C', 1],[228.0, 180, ',', 4],[230.0, 200, 'and', 4],[231.0, 250, 'C', 4],[282.0, 200, 'C', 4]

Ga
###High-temperature intrinsic ferromagnetism in heavily Fe-doped GaAs layers|A. V. Kudrin,V. P. Lesnikov,Yu. A. Danilov,M. V. Dorokhin,O. V. Vikhrova,P. B. Demina,D. A. Pavlov,Yu. V. Usov,V. E. Milin,Yu. M. Kuznetsov,R. N. Kriukov,A. A. Konakov,N. Yu. Tabachkova###
(1306445, 1306445)
 The X<missing VAR>-ray photoelectron spectroscopyinvestigations showed that Fe atoms form chemical bonds with Ga and As atomswith almost equal probability and thus the comparable number of Fe atomssubstitute on Ga and As sites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[208.0, 20, 'at', 4],[125.0, 180, 'and', 2],[124.0, 200, 'C', 2],[57.0, 250, 'C', 1],[216.0, 180, ',', 4],[218.0, 200, 'and', 4],[219.0, 250, 'C', 4],[270.0, 200, 'C', 4]

As
###High-temperature intrinsic ferromagnetism in heavily Fe-doped GaAs layers|A. V. Kudrin,V. P. Lesnikov,Yu. A. Danilov,M. V. Dorokhin,O. V. Vikhrova,P. B. Demina,D. A. Pavlov,Yu. V. Usov,V. E. Milin,Yu. M. Kuznetsov,R. N. Kriukov,A. A. Konakov,N. Yu. Tabachkova###
(1306449, 1306449)
 The X<missing VAR>-ray photoelectron spectroscopyinvestigations showed that Fe atoms form chemical bonds with Ga and As atomswith almost equal probability and thus the comparable number of Fe atomssubstitute on Ga and As sites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[212.0, 20, 'at', 4],[129.0, 180, 'and', 2],[128.0, 200, 'C', 2],[61.0, 250, 'C', 1],[212.0, 180, ',', 4],[214.0, 200, 'and', 4],[215.0, 250, 'C', 4],[266.0, 200, 'C', 4]

Fe
###High-temperature intrinsic ferromagnetism in heavily Fe-doped GaAs layers|A. V. Kudrin,V. P. Lesnikov,Yu. A. Danilov,M. V. Dorokhin,O. V. Vikhrova,P. B. Demina,D. A. Pavlov,Yu. V. Usov,V. E. Milin,Yu. M. Kuznetsov,R. N. Kriukov,A. A. Konakov,N. Yu. Tabachkova###
(1306474, 1306474)
 The X<missing VAR>-ray photoelectron spectroscopyinvestigations showed that Fe atoms form chemical bonds with Ga and As atomswith almost equal probability and thus the comparable number of Fe atomssubstitute on Ga and As sites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[237.0, 20, 'at', 4],[154.0, 180, 'and', 2],[153.0, 200, 'C', 2],[86.0, 250, 'C', 1],[187.0, 180, ',', 4],[189.0, 200, 'and', 4],[190.0, 250, 'C', 4],[241.0, 200, 'C', 4]

Ga
###High-temperature intrinsic ferromagnetism in heavily Fe-doped GaAs layers|A. V. Kudrin,V. P. Lesnikov,Yu. A. Danilov,M. V. Dorokhin,O. V. Vikhrova,P. B. Demina,D. A. Pavlov,Yu. V. Usov,V. E. Milin,Yu. M. Kuznetsov,R. N. Kriukov,A. A. Konakov,N. Yu. Tabachkova###
(1306483, 1306483)
 The X<missing VAR>-ray photoelectron spectroscopyinvestigations showed that Fe atoms form chemical bonds with Ga and As atomswith almost equal probability and thus the comparable number of Fe atomssubstitute on Ga and As sites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[246.0, 20, 'at', 4],[163.0, 180, 'and', 2],[162.0, 200, 'C', 2],[95.0, 250, 'C', 1],[178.0, 180, ',', 4],[180.0, 200, 'and', 4],[181.0, 250, 'C', 4],[232.0, 200, 'C', 4]

As
###High-temperature intrinsic ferromagnetism in heavily Fe-doped GaAs layers|A. V. Kudrin,V. P. Lesnikov,Yu. A. Danilov,M. V. Dorokhin,O. V. Vikhrova,P. B. Demina,D. A. Pavlov,Yu. V. Usov,V. E. Milin,Yu. M. Kuznetsov,R. N. Kriukov,A. A. Konakov,N. Yu. Tabachkova###
(1306487, 1306487)
 The X<missing VAR>-ray photoelectron spectroscopyinvestigations showed that Fe atoms form chemical bonds with Ga and As atomswith almost equal probability and thus the comparable number of Fe atomssubstitute on Ga and As sites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[250.0, 20, 'at', 4],[167.0, 180, 'and', 2],[166.0, 200, 'C', 2],[99.0, 250, 'C', 1],[174.0, 180, ',', 4],[176.0, 200, 'and', 4],[177.0, 250, 'C', 4],[228.0, 200, 'C', 4]

GaAsFe
###High-temperature intrinsic ferromagnetism in heavily Fe-doped GaAs layers|A. V. Kudrin,V. P. Lesnikov,Yu. A. Danilov,M. V. Dorokhin,O. V. Vikhrova,P. B. Demina,D. A. Pavlov,Yu. V. Usov,V. E. Milin,Yu. M. Kuznetsov,R. N. Kriukov,A. A. Konakov,N. Yu. Tabachkova###
(1306509, 1306511)
 The n<missing VAR>-type conductivity of the obtainedconductive GaAsFe layers is apparently associated with electron transport in aFe acceptor impurity band within the GaAs band gap.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[272.0, 20, 'at', 5],[189.0, 180, 'and', 3],[188.0, 200, 'C', 3],[121.0, 250, 'C', 2],[150.0, 180, ',', 3],[152.0, 200, 'and', 3],[153.0, 250, 'C', 3],[204.0, 200, 'C', 3]

Fe
###High-temperature intrinsic ferromagnetism in heavily Fe-doped GaAs layers|A. V. Kudrin,V. P. Lesnikov,Yu. A. Danilov,M. V. Dorokhin,O. V. Vikhrova,P. B. Demina,D. A. Pavlov,Yu. V. Usov,V. E. Milin,Yu. M. Kuznetsov,R. N. Kriukov,A. A. Konakov,N. Yu. Tabachkova###
(1306532, 1306532)
 The n<missing VAR>-type conductivity of the obtainedconductive GaAsFe layers is apparently associated with electron transport in aFe acceptor impurity band within the GaAs band gap.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[295.0, 20, 'at', 5],[212.0, 180, 'and', 3],[211.0, 200, 'C', 3],[144.0, 250, 'C', 2],[129.0, 180, ',', 3],[131.0, 200, 'and', 3],[132.0, 250, 'C', 3],[183.0, 200, 'C', 3]

GaAs
###High-temperature intrinsic ferromagnetism in heavily Fe-doped GaAs layers|A. V. Kudrin,V. P. Lesnikov,Yu. A. Danilov,M. V. Dorokhin,O. V. Vikhrova,P. B. Demina,D. A. Pavlov,Yu. V. Usov,V. E. Milin,Yu. M. Kuznetsov,R. N. Kriukov,A. A. Konakov,N. Yu. Tabachkova###
(1306544, 1306545)
 The n<missing VAR>-type conductivity of the obtainedconductive GaAsFe layers is apparently associated with electron transport in aFe acceptor impurity band within the GaAs band gap.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[307.0, 20, 'at', 5],[224.0, 180, 'and', 3],[223.0, 200, 'C', 3],[156.0, 250, 'C', 2],[116.0, 180, ',', 3],[118.0, 200, 'and', 3],[119.0, 250, 'C', 3],[170.0, 200, 'C', 3]

GaAsFe
###High-temperature intrinsic ferromagnetism in heavily Fe-doped GaAs layers|A. V. Kudrin,V. P. Lesnikov,Yu. A. Danilov,M. V. Dorokhin,O. V. Vikhrova,P. B. Demina,D. A. Pavlov,Yu. V. Usov,V. E. Milin,Yu. M. Kuznetsov,R. N. Kriukov,A. A. Konakov,N. Yu. Tabachkova###
(1306610, 1306612)
Magnetoresistance measurements point to the out-of-plane magnetic anisotropy ofthe conductive GaAsFe layers related to the presence of the columnar regions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[373.0, 20, 'at', 7],[290.0, 180, 'and', 5],[289.0, 200, 'C', 5],[222.0, 250, 'C', 4],[49.0, 180, ',', 1],[51.0, 200, 'and', 1],[52.0, 250, 'C', 1],[103.0, 200, 'C', 1]

Fe
###High-temperature intrinsic ferromagnetism in heavily Fe-doped GaAs layers|A. V. Kudrin,V. P. Lesnikov,Yu. A. Danilov,M. V. Dorokhin,O. V. Vikhrova,P. B. Demina,D. A. Pavlov,Yu. V. Usov,V. E. Milin,Yu. M. Kuznetsov,R. N. Kriukov,A. A. Konakov,N. Yu. Tabachkova###
(1306730, 1306730)
 It was suggested that in heavily Fe-doped GaAs layers theferromagnetism is related to the Zener double exchange between Fe atoms withdifferent valence states via an intermediate As and Ga atom.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[493.0, 20, 'at', 9],[410.0, 180, 'and', 7],[409.0, 200, 'C', 7],[342.0, 250, 'C', 6],[69.0, 180, ',', 1],[67.0, 200, 'and', 1],[66.0, 250, 'C', 1],[15.0, 200, 'C', 1]

GaAs
###High-temperature intrinsic ferromagnetism in heavily Fe-doped GaAs layers|A. V. Kudrin,V. P. Lesnikov,Yu. A. Danilov,M. V. Dorokhin,O. V. Vikhrova,P. B. Demina,D. A. Pavlov,Yu. V. Usov,V. E. Milin,Yu. M. Kuznetsov,R. N. Kriukov,A. A. Konakov,N. Yu. Tabachkova###
(1306734, 1306735)
 It was suggested that in heavily Fe-doped GaAs layers theferromagnetism is related to the Zener double exchange between Fe atoms withdifferent valence states via an intermediate As and Ga atom.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[497.0, 20, 'at', 9],[414.0, 180, 'and', 7],[413.0, 200, 'C', 7],[346.0, 250, 'C', 6],[73.0, 180, ',', 1],[71.0, 200, 'and', 1],[70.0, 250, 'C', 1],[19.0, 200, 'C', 1]

Fe
###High-temperature intrinsic ferromagnetism in heavily Fe-doped GaAs layers|A. V. Kudrin,V. P. Lesnikov,Yu. A. Danilov,M. V. Dorokhin,O. V. Vikhrova,P. B. Demina,D. A. Pavlov,Yu. V. Usov,V. E. Milin,Yu. M. Kuznetsov,R. N. Kriukov,A. A. Konakov,N. Yu. Tabachkova###
(1306760, 1306760)
 It was suggested that in heavily Fe-doped GaAs layers theferromagnetism is related to the Zener double exchange between Fe atoms withdifferent valence states via an intermediate As and Ga atom.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[523.0, 20, 'at', 9],[440.0, 180, 'and', 7],[439.0, 200, 'C', 7],[372.0, 250, 'C', 6],[99.0, 180, ',', 1],[97.0, 200, 'and', 1],[96.0, 250, 'C', 1],[45.0, 200, 'C', 1]

As
###High-temperature intrinsic ferromagnetism in heavily Fe-doped GaAs layers|A. V. Kudrin,V. P. Lesnikov,Yu. A. Danilov,M. V. Dorokhin,O. V. Vikhrova,P. B. Demina,D. A. Pavlov,Yu. V. Usov,V. E. Milin,Yu. M. Kuznetsov,R. N. Kriukov,A. A. Konakov,N. Yu. Tabachkova###
(1306779, 1306779)
 It was suggested that in heavily Fe-doped GaAs layers theferromagnetism is related to the Zener double exchange between Fe atoms withdifferent valence states via an intermediate As and Ga atom.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[542.0, 20, 'at', 9],[459.0, 180, 'and', 7],[458.0, 200, 'C', 7],[391.0, 250, 'C', 6],[118.0, 180, ',', 1],[116.0, 200, 'and', 1],[115.0, 250, 'C', 1],[64.0, 200, 'C', 1]

Ga
###High-temperature intrinsic ferromagnetism in heavily Fe-doped GaAs layers|A. V. Kudrin,V. P. Lesnikov,Yu. A. Danilov,M. V. Dorokhin,O. V. Vikhrova,P. B. Demina,D. A. Pavlov,Yu. V. Usov,V. E. Milin,Yu. M. Kuznetsov,R. N. Kriukov,A. A. Konakov,N. Yu. Tabachkova###
(1306783, 1306783)
 It was suggested that in heavily Fe-doped GaAs layers theferromagnetism is related to the Zener double exchange between Fe atoms withdifferent valence states via an intermediate As and Ga atom.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[546.0, 20, 'at', 9],[463.0, 180, 'and', 7],[462.0, 200, 'C', 7],[395.0, 250, 'C', 6],[122.0, 180, ',', 1],[120.0, 200, 'and', 1],[119.0, 250, 'C', 1],[68.0, 200, 'C', 1]

NbP
###Orbital effect and weak localization physics in the longitudinal magnetoresistance of the Weyl semimetals NbP, NbAs, TaP and TaAs|M. Naumann,F. Arnold,M. D. Bachmann,K. A. Modic,P. J. W. Moll,V. Süß,M. Schmidt,E. Hassinger###
(1306824, 1306825)
Orbital effect and weak localization physics in the longitudinal magnetoresistance of the Weyl semimetals NbP, NbAs, TaP and TaAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[416.0, 4, 'T', 8]

NbAs
###Orbital effect and weak localization physics in the longitudinal magnetoresistance of the Weyl semimetals NbP, NbAs, TaP and TaAs|M. Naumann,F. Arnold,M. D. Bachmann,K. A. Modic,P. J. W. Moll,V. Süß,M. Schmidt,E. Hassinger###
(1306828, 1306829)
Orbital effect and weak localization physics in the longitudinal magnetoresistance of the Weyl semimetals NbP, NbAs, TaP and TaAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[412.0, 4, 'T', 8]

TaP
###Orbital effect and weak localization physics in the longitudinal magnetoresistance of the Weyl semimetals NbP, NbAs, TaP and TaAs|M. Naumann,F. Arnold,M. D. Bachmann,K. A. Modic,P. J. W. Moll,V. Süß,M. Schmidt,E. Hassinger###
(1306832, 1306833)
Orbital effect and weak localization physics in the longitudinal magnetoresistance of the Weyl semimetals NbP, NbAs, TaP and TaAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[408.0, 4, 'T', 8]

TaAs
###Orbital effect and weak localization physics in the longitudinal magnetoresistance of the Weyl semimetals NbP, NbAs, TaP and TaAs|M. Naumann,F. Arnold,M. D. Bachmann,K. A. Modic,P. J. W. Moll,V. Süß,M. Schmidt,E. Hassinger###
(1306837, 1306838)
Orbital effect and weak localization physics in the longitudinal magnetoresistance of the Weyl semimetals NbP, NbAs, TaP and TaAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[403.0, 4, 'T', 8]

TaAs
###Orbital effect and weak localization physics in the longitudinal magnetoresistance of the Weyl semimetals NbP, NbAs, TaP and TaAs|M. Naumann,F. Arnold,M. D. Bachmann,K. A. Modic,P. J. W. Moll,V. Süß,M. Schmidt,E. Hassinger###
(1306851, 1306852)
 Weyl semimetals such as the TaAs family (TaAs, TaP, NbAs, NbP) hostquasiparticle excitations resembling the long sought after Weyl fermions atspecial band-crossing points in the band structure denoted as Weyl nodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[389.0, 4, 'T', 7]

TaAs
###Orbital effect and weak localization physics in the longitudinal magnetoresistance of the Weyl semimetals NbP, NbAs, TaP and TaAs|M. Naumann,F. Arnold,M. D. Bachmann,K. A. Modic,P. J. W. Moll,V. Süß,M. Schmidt,E. Hassinger###
(1306857, 1306858)
 Weyl semimetals such as the TaAs family (TaAs, TaP, NbAs, NbP) hostquasiparticle excitations resembling the long sought after Weyl fermions atspecial band-crossing points in the band structure denoted as Weyl nodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[383.0, 4, 'T', 7]

TaP
###Orbital effect and weak localization physics in the longitudinal magnetoresistance of the Weyl semimetals NbP, NbAs, TaP and TaAs|M. Naumann,F. Arnold,M. D. Bachmann,K. A. Modic,P. J. W. Moll,V. Süß,M. Schmidt,E. Hassinger###
(1306861, 1306862)
 Weyl semimetals such as the TaAs family (TaAs, TaP, NbAs, NbP) hostquasiparticle excitations resembling the long sought after Weyl fermions atspecial band-crossing points in the band structure denoted as Weyl nodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[379.0, 4, 'T', 7]

NbAs
###Orbital effect and weak localization physics in the longitudinal magnetoresistance of the Weyl semimetals NbP, NbAs, TaP and TaAs|M. Naumann,F. Arnold,M. D. Bachmann,K. A. Modic,P. J. W. Moll,V. Süß,M. Schmidt,E. Hassinger###
(1306865, 1306866)
 Weyl semimetals such as the TaAs family (TaAs, TaP, NbAs, NbP) hostquasiparticle excitations resembling the long sought after Weyl fermions atspecial band-crossing points in the band structure denoted as Weyl nodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[375.0, 4, 'T', 7]

P
###Orbital effect and weak localization physics in the longitudinal magnetoresistance of the Weyl semimetals NbP, NbAs, TaP and TaAs|M. Naumann,F. Arnold,M. D. Bachmann,K. A. Modic,P. J. W. Moll,V. Süß,M. Schmidt,E. Hassinger###
(1306870, 1306870)
 Weyl semimetals such as the TaAs family (TaAs, TaP, NbAs, NbP) hostquasiparticle excitations resembling the long sought after Weyl fermions atspecial band-crossing points in the band structure denoted as Weyl nodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[371.0, 4, 'T', 7]

TaAs
###Orbital effect and weak localization physics in the longitudinal magnetoresistance of the Weyl semimetals NbP, NbAs, TaP and TaAs|M. Naumann,F. Arnold,M. D. Bachmann,K. A. Modic,P. J. W. Moll,V. Süß,M. Schmidt,E. Hassinger###
(1307062, 1307063)
 current inhomogeneities causedby a strong, field-induced conductivity anisotropy in semimetals, have asimilar experimental signature and therefore have hindered a determination ofthe intrinsic LMR in the TaAs family so far.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 4, 'T', 4]

O
###Orbital effect and weak localization physics in the longitudinal magnetoresistance of the Weyl semimetals NbP, NbAs, TaP and TaAs|M. Naumann,F. Arnold,M. D. Bachmann,K. A. Modic,P. J. W. Moll,V. Süß,M. Schmidt,E. Hassinger###
(1307169, 1307169)
 Our samples are of similar quality asthose previously studied in the literature and have a similar chemicalpotential as indicated by matching quantum oscillation (Q<missing VAR>O) frequencies.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 4, 'T', 2]

As
###Orbital effect and weak localization physics in the longitudinal magnetoresistance of the Weyl semimetals NbP, NbAs, TaP and TaAs|M. Naumann,F. Arnold,M. D. Bachmann,K. A. Modic,P. J. W. Moll,V. Süß,M. Schmidt,E. Hassinger###
(1307197, 1307197)
 As opposed toprevious studies where this was not done, we find a positive LMR that saturatesin fields above 4 T in TaP, NbP and NbAs for Bc<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 4, 'T', 0]

TaP
###Orbital effect and weak localization physics in the longitudinal magnetoresistance of the Weyl semimetals NbP, NbAs, TaP and TaAs|M. Naumann,F. Arnold,M. D. Bachmann,K. A. Modic,P. J. W. Moll,V. Süß,M. Schmidt,E. Hassinger###
(1307245, 1307246)
 As opposed toprevious studies where this was not done, we find a positive LMR that saturatesin fields above 4 T in TaP, NbP and NbAs for Bc<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 4, 'T', 0]

NbP
###Orbital effect and weak localization physics in the longitudinal magnetoresistance of the Weyl semimetals NbP, NbAs, TaP and TaAs|M. Naumann,F. Arnold,M. D. Bachmann,K. A. Modic,P. J. W. Moll,V. Süß,M. Schmidt,E. Hassinger###
(1307249, 1307250)
 As opposed toprevious studies where this was not done, we find a positive LMR that saturatesin fields above 4 T in TaP, NbP and NbAs for Bc<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 4, 'T', 0]

NbAs
###Orbital effect and weak localization physics in the longitudinal magnetoresistance of the Weyl semimetals NbP, NbAs, TaP and TaAs|M. Naumann,F. Arnold,M. D. Bachmann,K. A. Modic,P. J. W. Moll,V. Süß,M. Schmidt,E. Hassinger###
(1307254, 1307255)
 As opposed toprevious studies where this was not done, we find a positive LMR that saturatesin fields above 4 T in TaP, NbP and NbAs for Bc<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 4, 'T', 0]

B
###Orbital effect and weak localization physics in the longitudinal magnetoresistance of the Weyl semimetals NbP, NbAs, TaP and TaAs|M. Naumann,F. Arnold,M. D. Bachmann,K. A. Modic,P. J. W. Moll,V. Süß,M. Schmidt,E. Hassinger###
(1307259, 1307259)
 As opposed toprevious studies where this was not done, we find a positive LMR that saturatesin fields above 4 T in TaP, NbP and NbAs for Bc<missing VAR>.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 4, 'T', 0]

TaAs
###Orbital effect and weak localization physics in the longitudinal magnetoresistance of the Weyl semimetals NbP, NbAs, TaP and TaAs|M. Naumann,F. Arnold,M. D. Bachmann,K. A. Modic,P. J. W. Moll,V. Süß,M. Schmidt,E. Hassinger###
(1307352, 1307353)
 The TaAs family of compounds is the first to show such a simple LMRwithout apparent influences of scattering anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 4, 'T', 2]

In
###Orbital effect and weak localization physics in the longitudinal magnetoresistance of the Weyl semimetals NbP, NbAs, TaP and TaAs|M. Naumann,F. Arnold,M. D. Bachmann,K. A. Modic,P. J. W. Moll,V. Süß,M. Schmidt,E. Hassinger###
(1307395, 1307395)
 In configurations wherethe orbital effect is small, i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 4, 'T', 3]

B
###Orbital effect and weak localization physics in the longitudinal magnetoresistance of the Weyl semimetals NbP, NbAs, TaP and TaAs|M. Naumann,F. Arnold,M. D. Bachmann,K. A. Modic,P. J. W. Moll,V. Süß,M. Schmidt,E. Hassinger###
(1307420, 1307420)
 for Ba in NbAs and NbP, we find anon-monotonous LMR including regions of negative LMR.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 4, 'T', 4]

NbAs
###Orbital effect and weak localization physics in the longitudinal magnetoresistance of the Weyl semimetals NbP, NbAs, TaP and TaAs|M. Naumann,F. Arnold,M. D. Bachmann,K. A. Modic,P. J. W. Moll,V. Süß,M. Schmidt,E. Hassinger###
(1307425, 1307426)
 for Ba in NbAs and NbP, we find anon-monotonous LMR including regions of negative LMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[184.0, 4, 'T', 4]

NbP
###Orbital effect and weak localization physics in the longitudinal magnetoresistance of the Weyl semimetals NbP, NbAs, TaP and TaAs|M. Naumann,F. Arnold,M. D. Bachmann,K. A. Modic,P. J. W. Moll,V. Süß,M. Schmidt,E. Hassinger###
(1307430, 1307431)
 for Ba in NbAs and NbP, we find anon-monotonous LMR including regions of negative LMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[189.0, 4, 'T', 4]

EuAs3
###Magnetism-induced topological transition in EuAs3|Erjian Cheng,Wei Xia,Xianbiao Shi,Chengwei Wang,Chuanying Xi,Shaowen Xu,Darren C. Peets,Linshu Wang,Hao Su,Li Pi,Wei Ren,Xia Wang,Na Yu,Yulin Chen,Weiwei Zhao,Zhongkai Liu,Yanfeng Guo,Shiyan Li###
(1307539, 1307541)
Magnetism-induced topological transition in EuAs3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[366.0, 1.8, 'K', 4],[559.0, 3, 'K', 7]

S
###Magnetism-induced topological transition in EuAs3|Erjian Cheng,Wei Xia,Xianbiao Shi,Chengwei Wang,Chuanying Xi,Shaowen Xu,Darren C. Peets,Linshu Wang,Hao Su,Li Pi,Wei Ren,Xia Wang,Na Yu,Yulin Chen,Weiwei Zhao,Zhongkai Liu,Yanfeng Guo,Shiyan Li###
(1307635, 1307635)
 We present ab initio band calculations,electrical transport and angle-resolved photoemission spectroscopy (ARPES)measurements on the magnetic semimetal EuAs3, demonstrating amagnetism-induced topological transition from a topological nodal-linesemimetal in the paramagnetic or the spin-polarized state to a topologicalmassive Dirac metal in the antiferromagnetic (AFM) ground state at lowtemperature, featuring a pair of massive Dirac points, inverted bands andtopological surface states on the (010) surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[272.0, 1.8, 'K', 2],[465.0, 3, 'K', 5]

EuAs3
###Magnetism-induced topological transition in EuAs3|Erjian Cheng,Wei Xia,Xianbiao Shi,Chengwei Wang,Chuanying Xi,Shaowen Xu,Darren C. Peets,Linshu Wang,Hao Su,Li Pi,Wei Ren,Xia Wang,Na Yu,Yulin Chen,Weiwei Zhao,Zhongkai Liu,Yanfeng Guo,Shiyan Li###
(1307649, 1307651)
 We present ab initio band calculations,electrical transport and angle-resolved photoemission spectroscopy (ARPES)measurements on the magnetic semimetal EuAs3, demonstrating amagnetism-induced topological transition from a topological nodal-linesemimetal in the paramagnetic or the spin-polarized state to a topologicalmassive Dirac metal in the antiferromagnetic (AFM) ground state at lowtemperature, featuring a pair of massive Dirac points, inverted bands andtopological surface states on the (010) surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[256.0, 1.8, 'K', 2],[449.0, 3, 'K', 5]

F
###Magnetism-induced topological transition in EuAs3|Erjian Cheng,Wei Xia,Xianbiao Shi,Chengwei Wang,Chuanying Xi,Shaowen Xu,Darren C. Peets,Linshu Wang,Hao Su,Li Pi,Wei Ren,Xia Wang,Na Yu,Yulin Chen,Weiwei Zhao,Zhongkai Liu,Yanfeng Guo,Shiyan Li###
(1307717, 1307717)
 We present ab initio band calculations,electrical transport and angle-resolved photoemission spectroscopy (ARPES)measurements on the magnetic semimetal EuAs3, demonstrating amagnetism-induced topological transition from a topological nodal-linesemimetal in the paramagnetic or the spin-polarized state to a topologicalmassive Dirac metal in the antiferromagnetic (AFM) ground state at lowtemperature, featuring a pair of massive Dirac points, inverted bands andtopological surface states on the (010) surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[190.0, 1.8, 'K', 2],[383.0, 3, 'K', 5]

H
###Magnetism-induced topological transition in EuAs3|Erjian Cheng,Wei Xia,Xianbiao Shi,Chengwei Wang,Chuanying Xi,Shaowen Xu,Darren C. Peets,Linshu Wang,Hao Su,Li Pi,Wei Ren,Xia Wang,Na Yu,Yulin Chen,Weiwei Zhao,Zhongkai Liu,Yanfeng Guo,Shiyan Li###
(1307780, 1307780)
 Shubnikov-de Haas (SdH)oscillations in the AFM<missing VAR> state identify nonzero Berry phase and a negativelongitudinal magnetoresistance (n-LMR) induced by the chiral anomaly,confirming the topological nature predicted by band calculations.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 1.8, 'K', 1],[320.0, 3, 'K', 4]

F
###Magnetism-induced topological transition in EuAs3|Erjian Cheng,Wei Xia,Xianbiao Shi,Chengwei Wang,Chuanying Xi,Shaowen Xu,Darren C. Peets,Linshu Wang,Hao Su,Li Pi,Wei Ren,Xia Wang,Na Yu,Yulin Chen,Weiwei Zhao,Zhongkai Liu,Yanfeng Guo,Shiyan Li###
(1307791, 1307791)
 Shubnikov-de Haas (SdH)oscillations in the AFM<missing VAR> state identify nonzero Berry phase and a negativelongitudinal magnetoresistance (n-LMR) induced by the chiral anomaly,confirming the topological nature predicted by band calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 1.8, 'K', 1],[309.0, 3, 'K', 4]

F
###Magnetism-induced topological transition in EuAs3|Erjian Cheng,Wei Xia,Xianbiao Shi,Chengwei Wang,Chuanying Xi,Shaowen Xu,Darren C. Peets,Linshu Wang,Hao Su,Li Pi,Wei Ren,Xia Wang,Na Yu,Yulin Chen,Weiwei Zhao,Zhongkai Liu,Yanfeng Guo,Shiyan Li###
(1307976, 1307976)
 Consistent withband calculations for the spin-polarized state, four new bands in quantumoscillations different from those in the AFM<missing VAR> state are discerned, of which twoare topologically protected.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 1.8, 'K', 1],[124.0, 3, 'K', 2]

Y
###Magnetism-induced topological transition in EuAs3|Erjian Cheng,Wei Xia,Xianbiao Shi,Chengwei Wang,Chuanying Xi,Shaowen Xu,Darren C. Peets,Linshu Wang,Hao Su,Li Pi,Wei Ren,Xia Wang,Na Yu,Yulin Chen,Weiwei Zhao,Zhongkai Liu,Yanfeng Guo,Shiyan Li###
(1308010, 1308010)
 Nodal-line structures at the Y point in theBrillouin zone (BZ) are proposed in both the spin-polarized and paramagneticstates, and the latter is proven by ARPES.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 1.8, 'K', 2],[90.0, 3, 'K', 1]

B
###Magnetism-induced topological transition in EuAs3|Erjian Cheng,Wei Xia,Xianbiao Shi,Chengwei Wang,Chuanying Xi,Shaowen Xu,Darren C. Peets,Linshu Wang,Hao Su,Li Pi,Wei Ren,Xia Wang,Na Yu,Yulin Chen,Weiwei Zhao,Zhongkai Liu,Yanfeng Guo,Shiyan Li###
(1308024, 1308024)
 Nodal-line structures at the Y point in theBrillouin zone (BZ) are proposed in both the spin-polarized and paramagneticstates, and the latter is proven by ARPES.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 1.8, 'K', 2],[76.0, 3, 'K', 1]

S
###Magnetism-induced topological transition in EuAs3|Erjian Cheng,Wei Xia,Xianbiao Shi,Chengwei Wang,Chuanying Xi,Shaowen Xu,Darren C. Peets,Linshu Wang,Hao Su,Li Pi,Wei Ren,Xia Wang,Na Yu,Yulin Chen,Weiwei Zhao,Zhongkai Liu,Yanfeng Guo,Shiyan Li###
(1308066, 1308066)
 Nodal-line structures at the Y point in theBrillouin zone (BZ) are proposed in both the spin-polarized and paramagneticstates, and the latter is proven by ARPES.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[159.0, 1.8, 'K', 2],[34.0, 3, 'K', 1]

EuAs3
###Magnetism-induced topological transition in EuAs3|Erjian Cheng,Wei Xia,Xianbiao Shi,Chengwei Wang,Chuanying Xi,Shaowen Xu,Darren C. Peets,Linshu Wang,Hao Su,Li Pi,Wei Ren,Xia Wang,Na Yu,Yulin Chen,Weiwei Zhao,Zhongkai Liu,Yanfeng Guo,Shiyan Li###
(1308118, 1308120)
 These results indicate that magnetic EuAs3 provides a richplatform to explore exotic physics arising from the interaction of magnetismwith topology.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[211.0, 1.8, 'K', 4],[18.0, 3, 'K', 1]

S
###Spin-canting effects in GMR sensors with wide dynamic field range|Clemens Muehlenhoff,Christoph Vogler,Wolfgang Raberg,Dieter Suess,Manfred Albrecht###
(1308377, 1308377)
 Using a perpendicular magnetized reference system and an in-planefree layer allows us to overcome this disadvantage of xMR sensors, and,furthermore, investigate spin-canting effects in interlayer exchange coupledperpendicular synthetic antiferromagnets (p<missing VAR>-SAF).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 10, 'kOe', 1]

F
###Spin-canting effects in GMR sensors with wide dynamic field range|Clemens Muehlenhoff,Christoph Vogler,Wolfgang Raberg,Dieter Suess,Manfred Albrecht###
(1308379, 1308379)
 Using a perpendicular magnetized reference system and an in-planefree layer allows us to overcome this disadvantage of xMR sensors, and,furthermore, investigate spin-canting effects in interlayer exchange coupledperpendicular synthetic antiferromagnets (p<missing VAR>-SAF).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 10, 'kOe', 1]

S
###Spin-canting effects in GMR sensors with wide dynamic field range|Clemens Muehlenhoff,Christoph Vogler,Wolfgang Raberg,Dieter Suess,Manfred Albrecht###
(1308389, 1308389)
 We created p<missing VAR>-SAFs withexchange coupling fields of up to 10 kOe, based on magnetic Co/Pt multilayersystems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 10, 'kOe', 0]

Co/Pt
###Spin-canting effects in GMR sensors with wide dynamic field range|Clemens Muehlenhoff,Christoph Vogler,Wolfgang Raberg,Dieter Suess,Manfred Albrecht###
(1308416, 1308418)
 We created p<missing VAR>-SAFs withexchange coupling fields of up to 10 kOe, based on magnetic Co/Pt multilayersystems.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[9.0, 10, 'kOe', 0]

S
###Spin-canting effects in GMR sensors with wide dynamic field range|Clemens Muehlenhoff,Christoph Vogler,Wolfgang Raberg,Dieter Suess,Manfred Albrecht###
(1308430, 1308430)
 The p<missing VAR>-SAFs are either designed as single p<missing VAR>-SAFs, where two Co/Ptmultilayers are interlayer exchange coupled via a 4 AA thick Ru spacer, oras double p<missing VAR>-SAFs, where an additional Co layer is interlayer exchange coupledto the top multilayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 10, 'kOe', 1]

S
###Spin-canting effects in GMR sensors with wide dynamic field range|Clemens Muehlenhoff,Christoph Vogler,Wolfgang Raberg,Dieter Suess,Manfred Albrecht###
(1308446, 1308446)
 The p<missing VAR>-SAFs are either designed as single p<missing VAR>-SAFs, where two Co/Ptmultilayers are interlayer exchange coupled via a 4 AA thick Ru spacer, oras double p<missing VAR>-SAFs, where an additional Co layer is interlayer exchange coupledto the top multilayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 10, 'kOe', 1]

Co/Pt
###Spin-canting effects in GMR sensors with wide dynamic field range|Clemens Muehlenhoff,Christoph Vogler,Wolfgang Raberg,Dieter Suess,Manfred Albrecht###
(1308455, 1308457)
 The p<missing VAR>-SAFs are either designed as single p<missing VAR>-SAFs, where two Co/Ptmultilayers are interlayer exchange coupled via a 4 AA thick Ru spacer, oras double p<missing VAR>-SAFs, where an additional Co layer is interlayer exchange coupledto the top multilayer.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[48.0, 10, 'kOe', 1]

Ru
###Spin-canting effects in GMR sensors with wide dynamic field range|Clemens Muehlenhoff,Christoph Vogler,Wolfgang Raberg,Dieter Suess,Manfred Albrecht###
(1308481, 1308481)
 The p<missing VAR>-SAFs are either designed as single p<missing VAR>-SAFs, where two Co/Ptmultilayers are interlayer exchange coupled via a 4 AA thick Ru spacer, oras double p<missing VAR>-SAFs, where an additional Co layer is interlayer exchange coupledto the top multilayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 10, 'kOe', 1]

S
###Spin-canting effects in GMR sensors with wide dynamic field range|Clemens Muehlenhoff,Christoph Vogler,Wolfgang Raberg,Dieter Suess,Manfred Albrecht###
(1308495, 1308495)
 The p<missing VAR>-SAFs are either designed as single p<missing VAR>-SAFs, where two Co/Ptmultilayers are interlayer exchange coupled via a 4 AA thick Ru spacer, oras double p<missing VAR>-SAFs, where an additional Co layer is interlayer exchange coupledto the top multilayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 10, 'kOe', 1]

Co
###Spin-canting effects in GMR sensors with wide dynamic field range|Clemens Muehlenhoff,Christoph Vogler,Wolfgang Raberg,Dieter Suess,Manfred Albrecht###
(1308506, 1308506)
 The p<missing VAR>-SAFs are either designed as single p<missing VAR>-SAFs, where two Co/Ptmultilayers are interlayer exchange coupled via a 4 AA thick Ru spacer, oras double p<missing VAR>-SAFs, where an additional Co layer is interlayer exchange coupledto the top multilayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 10, 'kOe', 1]

S
###Spin-canting effects in GMR sensors with wide dynamic field range|Clemens Muehlenhoff,Christoph Vogler,Wolfgang Raberg,Dieter Suess,Manfred Albrecht###
(1308532, 1308532)
 These p<missing VAR>-SAFs are used for giant magnetoresistance (GMR)sensors with wide dynamic field range.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 10, 'kOe', 2]

S
###Spin-canting effects in GMR sensors with wide dynamic field range|Clemens Muehlenhoff,Christoph Vogler,Wolfgang Raberg,Dieter Suess,Manfred Albrecht###
(1308574, 1308574)
 By using a p<missing VAR>-SAF as the reference systemand employing an in-plane magnetic layer as the GMRs free layer, the linearrange can be effectively increased limited only by the p<missing VAR>-SAFs<missing VAR> switchingfields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 10, 'kOe', 3]

F
###Spin-canting effects in GMR sensors with wide dynamic field range|Clemens Muehlenhoff,Christoph Vogler,Wolfgang Raberg,Dieter Suess,Manfred Albrecht###
(1308576, 1308576)
 By using a p<missing VAR>-SAF as the reference systemand employing an in-plane magnetic layer as the GMRs free layer, the linearrange can be effectively increased limited only by the p<missing VAR>-SAFs<missing VAR> switchingfields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 10, 'kOe', 3]

S
###Spin-canting effects in GMR sensors with wide dynamic field range|Clemens Muehlenhoff,Christoph Vogler,Wolfgang Raberg,Dieter Suess,Manfred Albrecht###
(1308640, 1308640)
 By using a p<missing VAR>-SAF as the reference systemand employing an in-plane magnetic layer as the GMRs free layer, the linearrange can be effectively increased limited only by the p<missing VAR>-SAFs<missing VAR> switchingfields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[233.0, 10, 'kOe', 3]

F
###Spin-canting effects in GMR sensors with wide dynamic field range|Clemens Muehlenhoff,Christoph Vogler,Wolfgang Raberg,Dieter Suess,Manfred Albrecht###
(1308642, 1308642)
 By using a p<missing VAR>-SAF as the reference systemand employing an in-plane magnetic layer as the GMRs free layer, the linearrange can be effectively increased limited only by the p<missing VAR>-SAFs<missing VAR> switchingfields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[235.0, 10, 'kOe', 3]

S
###Spin-canting effects in GMR sensors with wide dynamic field range|Clemens Muehlenhoff,Christoph Vogler,Wolfgang Raberg,Dieter Suess,Manfred Albrecht###
(1308734, 1308734)
 Differentconfigurations were investigated, ranging from free layer magnetic saturationat lower to far higher fields than the p<missing VAR>-SAFs<missing VAR> switching fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[327.0, 10, 'kOe', 5]

F
###Spin-canting effects in GMR sensors with wide dynamic field range|Clemens Muehlenhoff,Christoph Vogler,Wolfgang Raberg,Dieter Suess,Manfred Albrecht###
(1308736, 1308736)
 Differentconfigurations were investigated, ranging from free layer magnetic saturationat lower to far higher fields than the p<missing VAR>-SAFs<missing VAR> switching fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[329.0, 10, 'kOe', 5]

S
###Spin-canting effects in GMR sensors with wide dynamic field range|Clemens Muehlenhoff,Christoph Vogler,Wolfgang Raberg,Dieter Suess,Manfred Albrecht###
(1308821, 1308821)
 Finally, our simulation results lay out the correlation of the p<missing VAR>-SAFs<missing VAR>design parameters and its magnetization reversal behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[414.0, 10, 'kOe', 7]

F
###Spin-canting effects in GMR sensors with wide dynamic field range|Clemens Muehlenhoff,Christoph Vogler,Wolfgang Raberg,Dieter Suess,Manfred Albrecht###
(1308823, 1308823)
 Finally, our simulation results lay out the correlation of the p<missing VAR>-SAFs<missing VAR>design parameters and its magnetization reversal behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[416.0, 10, 'kOe', 7]

CoFe/MgO
###Giant oscillatory tunnel magnetoresistance in CoFe/MgO/CoFe(001) junctions|Thomas Scheike,Zhenchao Wen,Hiroaki Sukegawa,Seiji Mitani###
(1308860, 1308864)
Giant oscillatory tunnel magnetoresistance in CoFe/MgO/CoFe(001) junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[123.0, 631, '%', 2],[217.0, 1143, '%', 3],[433.0, 0.32, 'nm', 6],[504.0, 140, '%', 7]

In
###Giant oscillatory tunnel magnetoresistance in CoFe/MgO/CoFe(001) junctions|Thomas Scheike,Zhenchao Wen,Hiroaki Sukegawa,Seiji Mitani###
(1308963, 1308963)
 In this study, we demonstrated TMR ratios ofup to 631% at room temperature (RT), which is two or more times larger thanthose used currently for magnetoresistive random access memory (MRAM) devices,using CoFe/MgO/CoFe(001) epitaxial MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 631, '%', 0],[118.0, 1143, '%', 1],[334.0, 0.32, 'nm', 4],[405.0, 140, '%', 5]

CoFe/MgO
###Giant oscillatory tunnel magnetoresistance in CoFe/MgO/CoFe(001) junctions|Thomas Scheike,Zhenchao Wen,Hiroaki Sukegawa,Seiji Mitani###
(1309048, 1309052)
 In this study, we demonstrated TMR ratios ofup to 631% at room temperature (RT), which is two or more times larger thanthose used currently for magnetoresistive random access memory (MRAM) devices,using CoFe/MgO/CoFe(001) epitaxial MTJs.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[61.0, 631, '%', 0],[29.0, 1143, '%', 1],[245.0, 0.32, 'nm', 4],[316.0, 140, '%', 5]

K
###Giant oscillatory tunnel magnetoresistance in CoFe/MgO/CoFe(001) junctions|Thomas Scheike,Zhenchao Wen,Hiroaki Sukegawa,Seiji Mitani###
(1309089, 1309089)
 The TMR ratio increased up to 1143% at10 K, which corresponds to an effective tunneling spin polarization of 0.923.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 631, '%', 1],[8.0, 1143, '%', 0],[208.0, 0.32, 'nm', 3],[279.0, 140, '%', 4]

MgO
###Giant oscillatory tunnel magnetoresistance in CoFe/MgO/CoFe(001) junctions|Thomas Scheike,Zhenchao Wen,Hiroaki Sukegawa,Seiji Mitani###
(1309164, 1309165)
The observed large TMR ratios resulted from the fine-tuning of atomic-scalestructures of the MTJs, such as crystallographic orientations and MgO interfaceoxidation, in which the well-known Delta1 coherent tunneling mechanism for thegiant TMR effect is expected to be pronounced.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[177.0, 631, '%', 2],[83.0, 1143, '%', 1],[132.0, 0.32, 'nm', 2],[203.0, 140, '%', 3]

MgO
###Giant oscillatory tunnel magnetoresistance in CoFe/MgO/CoFe(001) junctions|Thomas Scheike,Zhenchao Wen,Hiroaki Sukegawa,Seiji Mitani###
(1309272, 1309273)
, (i) TMR saturation at a thick MgO barrier region and (ii) enhanced TMRoscillation with a 0.32 nm period in MgO thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[285.0, 631, '%', 4],[191.0, 1143, '%', 3],[24.0, 0.32, 'nm', 0],[95.0, 140, '%', 1]

MgO
###Giant oscillatory tunnel magnetoresistance in CoFe/MgO/CoFe(001) junctions|Thomas Scheike,Zhenchao Wen,Hiroaki Sukegawa,Seiji Mitani###
(1309303, 1309304)
, (i) TMR saturation at a thick MgO barrier region and (ii) enhanced TMRoscillation with a 0.32 nm period in MgO thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[316.0, 631, '%', 4],[222.0, 1143, '%', 3],[6.0, 0.32, 'nm', 0],[64.0, 140, '%', 1]

MgO
###Giant oscillatory tunnel magnetoresistance in CoFe/MgO/CoFe(001) junctions|Thomas Scheike,Zhenchao Wen,Hiroaki Sukegawa,Seiji Mitani###
(1309339, 1309340)
 Particularly, the TMRoscillatory behavior dominates the transport in a wide range of MgOthicknesses; the peak-to-valley difference of the TMR oscillation exceeded 140%at RT, attributable to the appearance of large oscillatory components inresistance area product (R<missing VAR>A).
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[352.0, 631, '%', 5],[258.0, 1143, '%', 4],[42.0, 0.32, 'nm', 1],[28.0, 140, '%', 0]

V
###Giant oscillatory tunnel magnetoresistance in CoFe/MgO/CoFe(001) junctions|Thomas Scheike,Zhenchao Wen,Hiroaki Sukegawa,Seiji Mitani###
(1309452, 1309452)
 Further, we found that the oscillatory behaviorsof the TMR ratio and R<missing VAR>A survive, even under a -1 V bias voltage application,indicating the robustness of the oscillation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[465.0, 631, '%', 6],[371.0, 1143, '%', 5],[155.0, 0.32, 'nm', 2],[84.0, 140, '%', 1]

S
###Colossal transverse magnetoresistance due to nematic superconducting phase fluctuations in a copper oxide|Jonatan Wårdh,Mats Granath,Jie Wu,A. T. Bollinger,Xi He,Ivan Božović###
(1309714, 1309714)
 Electronic anisotropy (or nematicity) has been detected in all mainfamilies of cuprate superconductors by a range of experimental techniques --electronic Raman scattering, T<missing VAR>Hz dichroism, thermal conductivity, torquemagnetometry, second-harmonic generation -- and was directly visualized byscanning tunneling microscope (STM) spectroscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 0.5, '%', 1],[257.0, 6, ',', 4]

La2-xSr
###Colossal transverse magnetoresistance due to nematic superconducting phase fluctuations in a copper oxide|Jonatan Wårdh,Mats Granath,Jie Wu,A. T. Bollinger,Xi He,Ivan Božović###
(1309787, 1309791)
 Using angle-resolvedtransverse resistance (ARTR) measurements, a very sensitive and background-freetechnique that can detect 0.5% anisotropy in transport, we have observed italso in La2-xSrx<missing VAR>CuO4 (L<missing VAR>SCO) for 0.02 leq x<missing VAR> leq 0.25.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[23.0, 0.5, '%', 0],[180.0, 6, ',', 3]

CuO4
###Colossal transverse magnetoresistance due to nematic superconducting phase fluctuations in a copper oxide|Jonatan Wårdh,Mats Granath,Jie Wu,A. T. Bollinger,Xi He,Ivan Božović###
(1309793, 1309795)
 Using angle-resolvedtransverse resistance (ARTR) measurements, a very sensitive and background-freetechnique that can detect 0.5% anisotropy in transport, we have observed italso in La2-xSrx<missing VAR>CuO4 (L<missing VAR>SCO) for 0.02 leq x<missing VAR> leq 0.25.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 0.5, '%', 0],[176.0, 6, ',', 3]

O
###Colossal transverse magnetoresistance due to nematic superconducting phase fluctuations in a copper oxide|Jonatan Wårdh,Mats Granath,Jie Wu,A. T. Bollinger,Xi He,Ivan Božović###
(1309801, 1309801)
 Using angle-resolvedtransverse resistance (ARTR) measurements, a very sensitive and background-freetechnique that can detect 0.5% anisotropy in transport, we have observed italso in La2-xSrx<missing VAR>CuO4 (L<missing VAR>SCO) for 0.02 leq x<missing VAR> leq 0.25.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 0.5, '%', 0],[170.0, 6, ',', 3]

SCO
###Colossal transverse magnetoresistance due to nematic superconducting phase fluctuations in a copper oxide|Jonatan Wårdh,Mats Granath,Jie Wu,A. T. Bollinger,Xi He,Ivan Božović###
(1309829, 1309831)
Arguably the key enigma in L<missing VAR>SCO is the rotation of the nematic director withtemperature; this has not been seen before in any material.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 0.5, '%', 1],[140.0, 6, ',', 2]

SCO
###Colossal transverse magnetoresistance due to nematic superconducting phase fluctuations in a copper oxide|Jonatan Wårdh,Mats Granath,Jie Wu,A. T. Bollinger,Xi He,Ivan Božović###
(1309910, 1309912)
 Here, we addressthis puzzle by measuring the angle-resolved transverse magnetoresistance(ARTMR) in L<missing VAR>SCO.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 0.5, '%', 2],[59.0, 6, ',', 1]

C
###Colossal transverse magnetoresistance due to nematic superconducting phase fluctuations in a copper oxide|Jonatan Wårdh,Mats Granath,Jie Wu,A. T. Bollinger,Xi He,Ivan Božović###
(1309933, 1309933)
 We report a discovery of colossal transverse magnetoresistance(CTMR) -- an order-of-magnitude drop in the transverse resistivity in themagnetic field of 6,T<missing VAR>, while none is seen in the longitudinal resistivity.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 0.5, '%', 3],[38.0, 6, ',', 0]

Ni
###High-field magnetoresistance of microcrystalline and nanocrystalline Ni metal at 3 K and 300 K|I. Bakonyi,F. D. Czeschka,L. F. Kiss,V. A. Isnaini,A. T. Krupp,K. Palotás,S. Zsurzsa,L. Péter###
(1310248, 1310248)
High-field magnetoresistance of microcrystalline and nanocrystalline Ni metal at 3 K and 300 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 3, 'K', 0],[8.0, 300, 'K', 0],[47.0, 3, 'K', 1],[50.0, 300, 'K', 1],[133.0, 331, ',', 2],[201.0, 9, 'resembled', 2],[269.0, 3, 'K', 3],[387.0, 300, 'K', 5],[575.0, 300, 'K', 8],[630.0, 3, 'K', 9],[633.0, 300, 'K', 9]

Ni
###High-field magnetoresistance of microcrystalline and nanocrystalline Ni metal at 3 K and 300 K|I. Bakonyi,F. D. Czeschka,L. F. Kiss,V. A. Isnaini,A. T. Krupp,K. Palotás,S. Zsurzsa,L. Péter###
(1310311, 1310311)
 The magnetoresistance (MR) and the magnetization isotherms were studied up tohigh magnetic fields at T<missing VAR>  3 K and 300 K for a microcrystalline (muc) Nifoil corresponding to bulk Ni and for a nanocrystalline (nc) Ni foil.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 3, 'K', 1],[55.0, 300, 'K', 1],[16.0, 3, 'K', 0],[13.0, 300, 'K', 0],[70.0, 331, ',', 1],[138.0, 9, 'resembled', 1],[206.0, 3, 'K', 2],[324.0, 300, 'K', 4],[512.0, 300, 'K', 7],[567.0, 3, 'K', 8],[570.0, 300, 'K', 8]

Ni
###High-field magnetoresistance of microcrystalline and nanocrystalline Ni metal at 3 K and 300 K|I. Bakonyi,F. D. Czeschka,L. F. Kiss,V. A. Isnaini,A. T. Krupp,K. Palotás,S. Zsurzsa,L. Péter###
(1310322, 1310322)
 The magnetoresistance (MR) and the magnetization isotherms were studied up tohigh magnetic fields at T<missing VAR>  3 K and 300 K for a microcrystalline (muc) Nifoil corresponding to bulk Ni and for a nanocrystalline (nc) Ni foil.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 3, 'K', 1],[66.0, 300, 'K', 1],[27.0, 3, 'K', 0],[24.0, 300, 'K', 0],[59.0, 331, ',', 1],[127.0, 9, 'resembled', 1],[195.0, 3, 'K', 2],[313.0, 300, 'K', 4],[501.0, 300, 'K', 7],[556.0, 3, 'K', 8],[559.0, 300, 'K', 8]

Ni
###High-field magnetoresistance of microcrystalline and nanocrystalline Ni metal at 3 K and 300 K|I. Bakonyi,F. D. Czeschka,L. F. Kiss,V. A. Isnaini,A. T. Krupp,K. Palotás,S. Zsurzsa,L. Péter###
(1310336, 1310336)
 The magnetoresistance (MR) and the magnetization isotherms were studied up tohigh magnetic fields at T<missing VAR>  3 K and 300 K for a microcrystalline (muc) Nifoil corresponding to bulk Ni and for a nanocrystalline (nc) Ni foil.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 3, 'K', 1],[80.0, 300, 'K', 1],[41.0, 3, 'K', 0],[38.0, 300, 'K', 0],[45.0, 331, ',', 1],[113.0, 9, 'resembled', 1],[181.0, 3, 'K', 2],[299.0, 300, 'K', 4],[487.0, 300, 'K', 7],[542.0, 3, 'K', 8],[545.0, 300, 'K', 8]

At
###High-field magnetoresistance of microcrystalline and nanocrystalline Ni metal at 3 K and 300 K|I. Bakonyi,F. D. Czeschka,L. F. Kiss,V. A. Isnaini,A. T. Krupp,K. Palotás,S. Zsurzsa,L. Péter###
(1310341, 1310341)
 At T<missing VAR>  3K, for the muc<missing VAR>-Ni sample with a residual resistivity ratio (RRR) of 331, thefield dependence of the resistivity was similar to what was reported previouslyfor high-purity ferromagnets whereas the MR(H) behavior for the nc-Ni samplewith RRR  9 resembled that what was observed at low temperatures for Ni-basedalloys with low impurity concentration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 3, 'K', 2],[85.0, 300, 'K', 2],[46.0, 3, 'K', 1],[43.0, 300, 'K', 1],[40.0, 331, ',', 0],[108.0, 9, 'resembled', 0],[176.0, 3, 'K', 1],[294.0, 300, 'K', 3],[482.0, 300, 'K', 6],[537.0, 3, 'K', 7],[540.0, 300, 'K', 7]

K
###High-field magnetoresistance of microcrystalline and nanocrystalline Ni metal at 3 K and 300 K|I. Bakonyi,F. D. Czeschka,L. F. Kiss,V. A. Isnaini,A. T. Krupp,K. Palotás,S. Zsurzsa,L. Péter###
(1310349, 1310349)
 At T<missing VAR>  3K, for the muc<missing VAR>-Ni sample with a residual resistivity ratio (RRR) of 331, thefield dependence of the resistivity was similar to what was reported previouslyfor high-purity ferromagnets whereas the MR(H) behavior for the nc-Ni samplewith RRR  9 resembled that what was observed at low temperatures for Ni-basedalloys with low impurity concentration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 3, 'K', 2],[93.0, 300, 'K', 2],[54.0, 3, 'K', 1],[51.0, 300, 'K', 1],[32.0, 331, ',', 0],[100.0, 9, 'resembled', 0],[168.0, 3, 'K', 1],[286.0, 300, 'K', 3],[474.0, 300, 'K', 6],[529.0, 3, 'K', 7],[532.0, 300, 'K', 7]

Ni
###High-field magnetoresistance of microcrystalline and nanocrystalline Ni metal at 3 K and 300 K|I. Bakonyi,F. D. Czeschka,L. F. Kiss,V. A. Isnaini,A. T. Krupp,K. Palotás,S. Zsurzsa,L. Péter###
(1310359, 1310359)
 At T<missing VAR>  3K, for the muc<missing VAR>-Ni sample with a residual resistivity ratio (RRR) of 331, thefield dependence of the resistivity was similar to what was reported previouslyfor high-purity ferromagnets whereas the MR(H) behavior for the nc-Ni samplewith RRR  9 resembled that what was observed at low temperatures for Ni-basedalloys with low impurity concentration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 3, 'K', 2],[103.0, 300, 'K', 2],[64.0, 3, 'K', 1],[61.0, 300, 'K', 1],[22.0, 331, ',', 0],[90.0, 9, 'resembled', 0],[158.0, 3, 'K', 1],[276.0, 300, 'K', 3],[464.0, 300, 'K', 6],[519.0, 3, 'K', 7],[522.0, 300, 'K', 7]

(H)
###High-field magnetoresistance of microcrystalline and nanocrystalline Ni metal at 3 K and 300 K|I. Bakonyi,F. D. Czeschka,L. F. Kiss,V. A. Isnaini,A. T. Krupp,K. Palotás,S. Zsurzsa,L. Péter###
(1310426, 1310428)
 At T<missing VAR>  3K, for the muc<missing VAR>-Ni sample with a residual resistivity ratio (RRR) of 331, thefield dependence of the resistivity was similar to what was reported previouslyfor high-purity ferromagnets whereas the MR(H) behavior for the nc-Ni samplewith RRR  9 resembled that what was observed at low temperatures for Ni-basedalloys with low impurity concentration.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 3, 'K', 2],[170.0, 300, 'K', 2],[131.0, 3, 'K', 1],[128.0, 300, 'K', 1],[45.0, 331, ',', 0],[21.0, 9, 'resembled', 0],[89.0, 3, 'K', 1],[207.0, 300, 'K', 3],[395.0, 300, 'K', 6],[450.0, 3, 'K', 7],[453.0, 300, 'K', 7]

Ni
###High-field magnetoresistance of microcrystalline and nanocrystalline Ni metal at 3 K and 300 K|I. Bakonyi,F. D. Czeschka,L. F. Kiss,V. A. Isnaini,A. T. Krupp,K. Palotás,S. Zsurzsa,L. Péter###
(1310438, 1310438)
 At T<missing VAR>  3K, for the muc<missing VAR>-Ni sample with a residual resistivity ratio (RRR) of 331, thefield dependence of the resistivity was similar to what was reported previouslyfor high-purity ferromagnets whereas the MR(H) behavior for the nc-Ni samplewith RRR  9 resembled that what was observed at low temperatures for Ni-basedalloys with low impurity concentration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[185.0, 3, 'K', 2],[182.0, 300, 'K', 2],[143.0, 3, 'K', 1],[140.0, 300, 'K', 1],[57.0, 331, ',', 0],[11.0, 9, 'resembled', 0],[79.0, 3, 'K', 1],[197.0, 300, 'K', 3],[385.0, 300, 'K', 6],[440.0, 3, 'K', 7],[443.0, 300, 'K', 7]

Ni
###High-field magnetoresistance of microcrystalline and nanocrystalline Ni metal at 3 K and 300 K|I. Bakonyi,F. D. Czeschka,L. F. Kiss,V. A. Isnaini,A. T. Krupp,K. Palotás,S. Zsurzsa,L. Péter###
(1310467, 1310467)
 At T<missing VAR>  3K, for the muc<missing VAR>-Ni sample with a residual resistivity ratio (RRR) of 331, thefield dependence of the resistivity was similar to what was reported previouslyfor high-purity ferromagnets whereas the MR(H) behavior for the nc-Ni samplewith RRR  9 resembled that what was observed at low temperatures for Ni-basedalloys with low impurity concentration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[214.0, 3, 'K', 2],[211.0, 300, 'K', 2],[172.0, 3, 'K', 1],[169.0, 300, 'K', 1],[86.0, 331, ',', 0],[18.0, 9, 'resembled', 0],[50.0, 3, 'K', 1],[168.0, 300, 'K', 3],[356.0, 300, 'K', 6],[411.0, 3, 'K', 7],[414.0, 300, 'K', 7]

In
###High-field magnetoresistance of microcrystalline and nanocrystalline Ni metal at 3 K and 300 K|I. Bakonyi,F. D. Czeschka,L. F. Kiss,V. A. Isnaini,A. T. Krupp,K. Palotás,S. Zsurzsa,L. Péter###
(1310483, 1310483)
 In the magnetically saturated state,the resistivity increased with magnetic field for both samples at T<missing VAR>  3 K andthe field dependence was dominated by the ordinary MR due to the Lorentz forceacting on the electron trajectories.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[230.0, 3, 'K', 3],[227.0, 300, 'K', 3],[188.0, 3, 'K', 2],[185.0, 300, 'K', 2],[102.0, 331, ',', 1],[34.0, 9, 'resembled', 1],[34.0, 3, 'K', 0],[152.0, 300, 'K', 2],[340.0, 300, 'K', 5],[395.0, 3, 'K', 6],[398.0, 300, 'K', 6]

(H)
###High-field magnetoresistance of microcrystalline and nanocrystalline Ni metal at 3 K and 300 K|I. Bakonyi,F. D. Czeschka,L. F. Kiss,V. A. Isnaini,A. T. Krupp,K. Palotás,S. Zsurzsa,L. Péter###
(1310570, 1310572)
 However, the MR(H) curves were found to besaturating for muc<missing VAR>-Ni and non-saturating for nc-Ni, the difference arisingfrom their very different electron mean free paths.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[317.0, 3, 'K', 4],[314.0, 300, 'K', 4],[275.0, 3, 'K', 3],[272.0, 300, 'K', 3],[189.0, 331, ',', 2],[121.0, 9, 'resembled', 2],[53.0, 3, 'K', 1],[63.0, 300, 'K', 1],[251.0, 300, 'K', 4],[306.0, 3, 'K', 5],[309.0, 300, 'K', 5]

Ni
###High-field magnetoresistance of microcrystalline and nanocrystalline Ni metal at 3 K and 300 K|I. Bakonyi,F. D. Czeschka,L. F. Kiss,V. A. Isnaini,A. T. Krupp,K. Palotás,S. Zsurzsa,L. Péter###
(1310592, 1310592)
 However, the MR(H) curves were found to besaturating for muc<missing VAR>-Ni and non-saturating for nc-Ni, the difference arisingfrom their very different electron mean free paths.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[339.0, 3, 'K', 4],[336.0, 300, 'K', 4],[297.0, 3, 'K', 3],[294.0, 300, 'K', 3],[211.0, 331, ',', 2],[143.0, 9, 'resembled', 2],[75.0, 3, 'K', 1],[43.0, 300, 'K', 1],[231.0, 300, 'K', 4],[286.0, 3, 'K', 5],[289.0, 300, 'K', 5]

Ni
###High-field magnetoresistance of microcrystalline and nanocrystalline Ni metal at 3 K and 300 K|I. Bakonyi,F. D. Czeschka,L. F. Kiss,V. A. Isnaini,A. T. Krupp,K. Palotás,S. Zsurzsa,L. Péter###
(1310604, 1310604)
 However, the MR(H) curves were found to besaturating for muc<missing VAR>-Ni and non-saturating for nc-Ni, the difference arisingfrom their very different electron mean free paths.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[351.0, 3, 'K', 4],[348.0, 300, 'K', 4],[309.0, 3, 'K', 3],[306.0, 300, 'K', 3],[223.0, 331, ',', 2],[155.0, 9, 'resembled', 2],[87.0, 3, 'K', 1],[31.0, 300, 'K', 1],[219.0, 300, 'K', 4],[274.0, 3, 'K', 5],[277.0, 300, 'K', 5]

At
###High-field magnetoresistance of microcrystalline and nanocrystalline Ni metal at 3 K and 300 K|I. Bakonyi,F. D. Czeschka,L. F. Kiss,V. A. Isnaini,A. T. Krupp,K. Palotás,S. Zsurzsa,L. Péter###
(1310631, 1310631)
 At T<missing VAR>  300 K, the MR(H)curves of both Ni samples were very similar to those known for bulk Ni.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[378.0, 3, 'K', 5],[375.0, 300, 'K', 5],[336.0, 3, 'K', 4],[333.0, 300, 'K', 4],[250.0, 331, ',', 3],[182.0, 9, 'resembled', 3],[114.0, 3, 'K', 2],[4.0, 300, 'K', 0],[192.0, 300, 'K', 3],[247.0, 3, 'K', 4],[250.0, 300, 'K', 4]

(H)
###High-field magnetoresistance of microcrystalline and nanocrystalline Ni metal at 3 K and 300 K|I. Bakonyi,F. D. Czeschka,L. F. Kiss,V. A. Isnaini,A. T. Krupp,K. Palotás,S. Zsurzsa,L. Péter###
(1310642, 1310644)
 At T<missing VAR>  300 K, the MR(H)curves of both Ni samples were very similar to those known for bulk Ni.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[389.0, 3, 'K', 5],[386.0, 300, 'K', 5],[347.0, 3, 'K', 4],[344.0, 300, 'K', 4],[261.0, 331, ',', 3],[193.0, 9, 'resembled', 3],[125.0, 3, 'K', 2],[7.0, 300, 'K', 0],[179.0, 300, 'K', 3],[234.0, 3, 'K', 4],[237.0, 300, 'K', 4]

Ni
###High-field magnetoresistance of microcrystalline and nanocrystalline Ni metal at 3 K and 300 K|I. Bakonyi,F. D. Czeschka,L. F. Kiss,V. A. Isnaini,A. T. Krupp,K. Palotás,S. Zsurzsa,L. Péter###
(1310653, 1310653)
 At T<missing VAR>  300 K, the MR(H)curves of both Ni samples were very similar to those known for bulk Ni.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[400.0, 3, 'K', 5],[397.0, 300, 'K', 5],[358.0, 3, 'K', 4],[355.0, 300, 'K', 4],[272.0, 331, ',', 3],[204.0, 9, 'resembled', 3],[136.0, 3, 'K', 2],[18.0, 300, 'K', 0],[170.0, 300, 'K', 3],[225.0, 3, 'K', 4],[228.0, 300, 'K', 4]

Ni
###High-field magnetoresistance of microcrystalline and nanocrystalline Ni metal at 3 K and 300 K|I. Bakonyi,F. D. Czeschka,L. F. Kiss,V. A. Isnaini,A. T. Krupp,K. Palotás,S. Zsurzsa,L. Péter###
(1310673, 1310673)
 At T<missing VAR>  300 K, the MR(H)curves of both Ni samples were very similar to those known for bulk Ni.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[420.0, 3, 'K', 5],[417.0, 300, 'K', 5],[378.0, 3, 'K', 4],[375.0, 300, 'K', 4],[292.0, 331, ',', 3],[224.0, 9, 'resembled', 3],[156.0, 3, 'K', 2],[38.0, 300, 'K', 0],[150.0, 300, 'K', 3],[205.0, 3, 'K', 4],[208.0, 300, 'K', 4]

(H)
###High-field magnetoresistance of microcrystalline and nanocrystalline Ni metal at 3 K and 300 K|I. Bakonyi,F. D. Czeschka,L. F. Kiss,V. A. Isnaini,A. T. Krupp,K. Palotás,S. Zsurzsa,L. Péter###
(1310739, 1310741)
 The MR(H) data were analyzed at bothtemperatures with the help of Kohler plots from which the resistivityanisotropy splitting (DeltarhoAMR) and the anisotropic magnetoresistance(AMR) ratio were derived.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[486.0, 3, 'K', 7],[483.0, 300, 'K', 7],[444.0, 3, 'K', 6],[441.0, 300, 'K', 6],[358.0, 331, ',', 5],[290.0, 9, 'resembled', 5],[222.0, 3, 'K', 4],[104.0, 300, 'K', 2],[82.0, 300, 'K', 1],[137.0, 3, 'K', 2],[140.0, 300, 'K', 2]

H
###High-field magnetoresistance of microcrystalline and nanocrystalline Ni metal at 3 K and 300 K|I. Bakonyi,F. D. Czeschka,L. F. Kiss,V. A. Isnaini,A. T. Krupp,K. Palotás,S. Zsurzsa,L. Péter###
(1310829, 1310829)
 It was demonstrated that at T<missing VAR>  300 K,rho(Hrightarrow 0)rho(Brightarrow 0) due to the negligible contributionof the ordinary MR.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[576.0, 3, 'K', 8],[573.0, 300, 'K', 8],[534.0, 3, 'K', 7],[531.0, 300, 'K', 7],[448.0, 331, ',', 6],[380.0, 9, 'resembled', 6],[312.0, 3, 'K', 5],[194.0, 300, 'K', 3],[6.0, 300, 'K', 0],[49.0, 3, 'K', 1],[52.0, 300, 'K', 1]

B
###High-field magnetoresistance of microcrystalline and nanocrystalline Ni metal at 3 K and 300 K|I. Bakonyi,F. D. Czeschka,L. F. Kiss,V. A. Isnaini,A. T. Krupp,K. Palotás,S. Zsurzsa,L. Péter###
(1310836, 1310836)
 It was demonstrated that at T<missing VAR>  300 K,rho(Hrightarrow 0)rho(Brightarrow 0) due to the negligible contributionof the ordinary MR.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[583.0, 3, 'K', 8],[580.0, 300, 'K', 8],[541.0, 3, 'K', 7],[538.0, 300, 'K', 7],[455.0, 331, ',', 6],[387.0, 9, 'resembled', 6],[319.0, 3, 'K', 5],[201.0, 300, 'K', 3],[13.0, 300, 'K', 0],[42.0, 3, 'K', 1],[45.0, 300, 'K', 1]

Ni
###High-field magnetoresistance of microcrystalline and nanocrystalline Ni metal at 3 K and 300 K|I. Bakonyi,F. D. Czeschka,L. F. Kiss,V. A. Isnaini,A. T. Krupp,K. Palotás,S. Zsurzsa,L. Péter###
(1310873, 1310873)
 The data for the two Ni samples at 3 K and 300 K were foundto indicate an approximately linear scaling of DeltarhoAMR with thezero-field resistivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[620.0, 3, 'K', 9],[617.0, 300, 'K', 9],[578.0, 3, 'K', 8],[575.0, 300, 'K', 8],[492.0, 331, ',', 7],[424.0, 9, 'resembled', 7],[356.0, 3, 'K', 6],[238.0, 300, 'K', 4],[50.0, 300, 'K', 1],[5.0, 3, 'K', 0],[8.0, 300, 'K', 0]

Ni
###High-field magnetoresistance of microcrystalline and nanocrystalline Ni metal at 3 K and 300 K|I. Bakonyi,F. D. Czeschka,L. F. Kiss,V. A. Isnaini,A. T. Krupp,K. Palotás,S. Zsurzsa,L. Péter###
(1310957, 1310957)
 This implies that the AMR ratio does not varysignificantly with temperature in either microstructural state of Ni.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[704.0, 3, 'K', 10],[701.0, 300, 'K', 10],[662.0, 3, 'K', 9],[659.0, 300, 'K', 9],[576.0, 331, ',', 8],[508.0, 9, 'resembled', 8],[440.0, 3, 'K', 7],[322.0, 300, 'K', 5],[134.0, 300, 'K', 2],[79.0, 3, 'K', 1],[76.0, 300, 'K', 1]

GdSb
###Epitaxial growth, magnetoresistance, and electronic band structure of GdSb magnetic semimetal films|Hadass S. Inbar,Dai Q. Ho,Shouvik Chatterjee,Mihir Pendharkar,Aaron N. Engel,Jason T. Dong,Shoaib Khalid,Yu Hao Chang,Taozhi Guo,Alexei V. Fedorov,Donghui Lu,Makoto Hashimoto,Dan Read,Anderson Janotti,Christopher J. Palmstrøm###
(1310986, 1310987)
Epitaxial growth, magnetoresistance, and electronic band structure of GdSb magnetic semimetal films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Epitaxial growth, magnetoresistance, and electronic band structure of GdSb magnetic semimetal films|Hadass S. Inbar,Dai Q. Ho,Shouvik Chatterjee,Mihir Pendharkar,Aaron N. Engel,Jason T. Dong,Shoaib Khalid,Yu Hao Chang,Taozhi Guo,Alexei V. Fedorov,Donghui Lu,Makoto Hashimoto,Dan Read,Anderson Janotti,Christopher J. Palmstrøm###
(1311033, 1311033)
 Motivated by observations of extreme magnetoresistance (XMR) in bulk crystalsof rare-earth monopnictide (RE-V) compounds and emerging applications in novelspintronic and plasmonic devices based on thin-film semimetals, we haveinvestigated the electronic band structure and transport behavior of epitaxialGdSb thin films grown on III-V semiconductor surfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GdSb
###Epitaxial growth, magnetoresistance, and electronic band structure of GdSb magnetic semimetal films|Hadass S. Inbar,Dai Q. Ho,Shouvik Chatterjee,Mihir Pendharkar,Aaron N. Engel,Jason T. Dong,Shoaib Khalid,Yu Hao Chang,Taozhi Guo,Alexei V. Fedorov,Donghui Lu,Makoto Hashimoto,Dan Read,Anderson Janotti,Christopher J. Palmstrøm###
(1311094, 1311095)
 Motivated by observations of extreme magnetoresistance (XMR) in bulk crystalsof rare-earth monopnictide (RE-V) compounds and emerging applications in novelspintronic and plasmonic devices based on thin-film semimetals, we haveinvestigated the electronic band structure and transport behavior of epitaxialGdSb thin films grown on III-V semiconductor surfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

III
###Epitaxial growth, magnetoresistance, and electronic band structure of GdSb magnetic semimetal films|Hadass S. Inbar,Dai Q. Ho,Shouvik Chatterjee,Mihir Pendharkar,Aaron N. Engel,Jason T. Dong,Shoaib Khalid,Yu Hao Chang,Taozhi Guo,Alexei V. Fedorov,Donghui Lu,Makoto Hashimoto,Dan Read,Anderson Janotti,Christopher J. Palmstrøm###
(1311105, 1311107)
 Motivated by observations of extreme magnetoresistance (XMR) in bulk crystalsof rare-earth monopnictide (RE-V) compounds and emerging applications in novelspintronic and plasmonic devices based on thin-film semimetals, we haveinvestigated the electronic band structure and transport behavior of epitaxialGdSb thin films grown on III-V semiconductor surfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Epitaxial growth, magnetoresistance, and electronic band structure of GdSb magnetic semimetal films|Hadass S. Inbar,Dai Q. Ho,Shouvik Chatterjee,Mihir Pendharkar,Aaron N. Engel,Jason T. Dong,Shoaib Khalid,Yu Hao Chang,Taozhi Guo,Alexei V. Fedorov,Donghui Lu,Makoto Hashimoto,Dan Read,Anderson Janotti,Christopher J. Palmstrøm###
(1311109, 1311109)
 Motivated by observations of extreme magnetoresistance (XMR) in bulk crystalsof rare-earth monopnictide (RE-V) compounds and emerging applications in novelspintronic and plasmonic devices based on thin-film semimetals, we haveinvestigated the electronic band structure and transport behavior of epitaxialGdSb thin films grown on III-V semiconductor surfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Gd3
###Epitaxial growth, magnetoresistance, and electronic band structure of GdSb magnetic semimetal films|Hadass S. Inbar,Dai Q. Ho,Shouvik Chatterjee,Mihir Pendharkar,Aaron N. Engel,Jason T. Dong,Shoaib Khalid,Yu Hao Chang,Taozhi Guo,Alexei V. Fedorov,Donghui Lu,Makoto Hashimoto,Dan Read,Anderson Janotti,Christopher J. Palmstrøm###
(1311118, 1311119)
 The Gd3 ion in GdSb hasa high spin S7/2 and no orbital angular momentum, serving as a model systemfor studying the effects of antiferromagnetic order and strong exchangecoupling on the resulting Fermi surface and magnetotransport properties ofRE-Vs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GdSb
###Epitaxial growth, magnetoresistance, and electronic band structure of GdSb magnetic semimetal films|Hadass S. Inbar,Dai Q. Ho,Shouvik Chatterjee,Mihir Pendharkar,Aaron N. Engel,Jason T. Dong,Shoaib Khalid,Yu Hao Chang,Taozhi Guo,Alexei V. Fedorov,Donghui Lu,Makoto Hashimoto,Dan Read,Anderson Janotti,Christopher J. Palmstrøm###
(1311125, 1311126)
 The Gd3 ion in GdSb hasa high spin S7/2 and no orbital angular momentum, serving as a model systemfor studying the effects of antiferromagnetic order and strong exchangecoupling on the resulting Fermi surface and magnetotransport properties ofRE-Vs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S7
###Epitaxial growth, magnetoresistance, and electronic band structure of GdSb magnetic semimetal films|Hadass S. Inbar,Dai Q. Ho,Shouvik Chatterjee,Mihir Pendharkar,Aaron N. Engel,Jason T. Dong,Shoaib Khalid,Yu Hao Chang,Taozhi Guo,Alexei V. Fedorov,Donghui Lu,Makoto Hashimoto,Dan Read,Anderson Janotti,Christopher J. Palmstrøm###
(1311137, 1311138)
 The Gd3 ion in GdSb hasa high spin S7/2 and no orbital angular momentum, serving as a model systemfor studying the effects of antiferromagnetic order and strong exchangecoupling on the resulting Fermi surface and magnetotransport properties ofRE-Vs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GdSb
###Epitaxial growth, magnetoresistance, and electronic band structure of GdSb magnetic semimetal films|Hadass S. Inbar,Dai Q. Ho,Shouvik Chatterjee,Mihir Pendharkar,Aaron N. Engel,Jason T. Dong,Shoaib Khalid,Yu Hao Chang,Taozhi Guo,Alexei V. Fedorov,Donghui Lu,Makoto Hashimoto,Dan Read,Anderson Janotti,Christopher J. Palmstrøm###
(1311245, 1311246)
 We present a surface and structural characterization study mapping theoptimal synthesis window of thin epitaxial GdSb films grown on III-Vlattice-matched buffer layers via molecular beam epitaxy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

III
###Epitaxial growth, magnetoresistance, and electronic band structure of GdSb magnetic semimetal films|Hadass S. Inbar,Dai Q. Ho,Shouvik Chatterjee,Mihir Pendharkar,Aaron N. Engel,Jason T. Dong,Shoaib Khalid,Yu Hao Chang,Taozhi Guo,Alexei V. Fedorov,Donghui Lu,Makoto Hashimoto,Dan Read,Anderson Janotti,Christopher J. Palmstrøm###
(1311254, 1311256)
 We present a surface and structural characterization study mapping theoptimal synthesis window of thin epitaxial GdSb films grown on III-Vlattice-matched buffer layers via molecular beam epitaxy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Epitaxial growth, magnetoresistance, and electronic band structure of GdSb magnetic semimetal films|Hadass S. Inbar,Dai Q. Ho,Shouvik Chatterjee,Mihir Pendharkar,Aaron N. Engel,Jason T. Dong,Shoaib Khalid,Yu Hao Chang,Taozhi Guo,Alexei V. Fedorov,Donghui Lu,Makoto Hashimoto,Dan Read,Anderson Janotti,Christopher J. Palmstrøm###
(1311258, 1311258)
 We present a surface and structural characterization study mapping theoptimal synthesis window of thin epitaxial GdSb films grown on III-Vlattice-matched buffer layers via molecular beam epitaxy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Epitaxial growth, magnetoresistance, and electronic band structure of GdSb magnetic semimetal films|Hadass S. Inbar,Dai Q. Ho,Shouvik Chatterjee,Mihir Pendharkar,Aaron N. Engel,Jason T. Dong,Shoaib Khalid,Yu Hao Chang,Taozhi Guo,Alexei V. Fedorov,Donghui Lu,Makoto Hashimoto,Dan Read,Anderson Janotti,Christopher J. Palmstrøm###
(1311298, 1311298)
 To determine thefactors limiting XMR in RE-V thin films and provide a benchmark for bandstructure predictions of topological phases of RE-Vs, the electronic bandstructure of GdSb thin films is studied, comparing carrier densities extractedfrom magnetotransport, angle-resolved photoemission spectroscopy (ARPES), anddensity functional theory (DFT) calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GdSb
###Epitaxial growth, magnetoresistance, and electronic band structure of GdSb magnetic semimetal films|Hadass S. Inbar,Dai Q. Ho,Shouvik Chatterjee,Mihir Pendharkar,Aaron N. Engel,Jason T. Dong,Shoaib Khalid,Yu Hao Chang,Taozhi Guo,Alexei V. Fedorov,Donghui Lu,Makoto Hashimoto,Dan Read,Anderson Janotti,Christopher J. Palmstrøm###
(1311346, 1311347)
 To determine thefactors limiting XMR in RE-V thin films and provide a benchmark for bandstructure predictions of topological phases of RE-Vs, the electronic bandstructure of GdSb thin films is studied, comparing carrier densities extractedfrom magnetotransport, angle-resolved photoemission spectroscopy (ARPES), anddensity functional theory (DFT) calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Epitaxial growth, magnetoresistance, and electronic band structure of GdSb magnetic semimetal films|Hadass S. Inbar,Dai Q. Ho,Shouvik Chatterjee,Mihir Pendharkar,Aaron N. Engel,Jason T. Dong,Shoaib Khalid,Yu Hao Chang,Taozhi Guo,Alexei V. Fedorov,Donghui Lu,Makoto Hashimoto,Dan Read,Anderson Janotti,Christopher J. Palmstrøm###
(1311385, 1311385)
 To determine thefactors limiting XMR in RE-V thin films and provide a benchmark for bandstructure predictions of topological phases of RE-Vs, the electronic bandstructure of GdSb thin films is studied, comparing carrier densities extractedfrom magnetotransport, angle-resolved photoemission spectroscopy (ARPES), anddensity functional theory (DFT) calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Epitaxial growth, magnetoresistance, and electronic band structure of GdSb magnetic semimetal films|Hadass S. Inbar,Dai Q. Ho,Shouvik Chatterjee,Mihir Pendharkar,Aaron N. Engel,Jason T. Dong,Shoaib Khalid,Yu Hao Chang,Taozhi Guo,Alexei V. Fedorov,Donghui Lu,Makoto Hashimoto,Dan Read,Anderson Janotti,Christopher J. Palmstrøm###
(1311411, 1311411)
 ARPES shows hole-carrier richtopologically-trivial semi-metallic band structure close to completeelectron-hole compensation, with quantum confinement effects in the thin filmsobserved through the presence of quantum well states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Surprisingly large anomalous Hall effect and giant negative magnetoresistance in half-topological semimetals|Yanglin Zhu,Cheng-Yi Huang,Yu Wang,David Graf,Hsin Lin,Seng Huat Lee,John Singleton,Lujin Min,Johanna C. Palmstrom,Arun Bansil,Bahadur Singh,Zhiqiang Mao###
(1311664, 1311664)
 Large intrinsic anomalous Hall effect (AHE) due to the Berry curvature inmagnetic topological semimetals is attracting enormous interest due to itsfundamental importance and technological relevance.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[256.0, 2, ',', 4],[383.0, 98, '%', 5]

H
###Surprisingly large anomalous Hall effect and giant negative magnetoresistance in half-topological semimetals|Yanglin Zhu,Cheng-Yi Huang,Yu Wang,David Graf,Hsin Lin,Seng Huat Lee,John Singleton,Lujin Min,Johanna C. Palmstrom,Arun Bansil,Bahadur Singh,Zhiqiang Mao###
(1311725, 1311725)
 Mechanisms resulting inlarge intrinsic AHE<missing VAR> include diverging Berry curvature in Weyl semimetals,anticrossing nodal rings or points of non-trivial bands, and noncollinear spinstructures.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[195.0, 2, ',', 3],[322.0, 98, '%', 4]

H
###Surprisingly large anomalous Hall effect and giant negative magnetoresistance in half-topological semimetals|Yanglin Zhu,Cheng-Yi Huang,Yu Wang,David Graf,Hsin Lin,Seng Huat Lee,John Singleton,Lujin Min,Johanna C. Palmstrom,Arun Bansil,Bahadur Singh,Zhiqiang Mao###
(1311790, 1311790)
 Here we show that a half-topological semimetal (HT<missing VAR>S) state near atopological critical point can provide a new mechanism for driving anexceptionally large AHE<missing VAR>.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 2, ',', 2],[257.0, 98, '%', 3]

S
###Surprisingly large anomalous Hall effect and giant negative magnetoresistance in half-topological semimetals|Yanglin Zhu,Cheng-Yi Huang,Yu Wang,David Graf,Hsin Lin,Seng Huat Lee,John Singleton,Lujin Min,Johanna C. Palmstrom,Arun Bansil,Bahadur Singh,Zhiqiang Mao###
(1311792, 1311792)
 Here we show that a half-topological semimetal (HT<missing VAR>S) state near atopological critical point can provide a new mechanism for driving anexceptionally large AHE<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 2, ',', 2],[255.0, 98, '%', 3]

H
###Surprisingly large anomalous Hall effect and giant negative magnetoresistance in half-topological semimetals|Yanglin Zhu,Cheng-Yi Huang,Yu Wang,David Graf,Hsin Lin,Seng Huat Lee,John Singleton,Lujin Min,Johanna C. Palmstrom,Arun Bansil,Bahadur Singh,Zhiqiang Mao###
(1311830, 1311830)
 Here we show that a half-topological semimetal (HT<missing VAR>S) state near atopological critical point can provide a new mechanism for driving anexceptionally large AHE<missing VAR>.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 2, ',', 2],[217.0, 98, '%', 3]

F
###Surprisingly large anomalous Hall effect and giant negative magnetoresistance in half-topological semimetals|Yanglin Zhu,Cheng-Yi Huang,Yu Wang,David Graf,Hsin Lin,Seng Huat Lee,John Singleton,Lujin Min,Johanna C. Palmstrom,Arun Bansil,Bahadur Singh,Zhiqiang Mao###
(1311863, 1311863)
 We reveal this through a systematic experimental andtheoretical study of the antiferromagnetic (AFM) half-Heusler compound TbPdBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 2, ',', 1],[184.0, 98, '%', 2]

TbPdBi
###Surprisingly large anomalous Hall effect and giant negative magnetoresistance in half-topological semimetals|Yanglin Zhu,Cheng-Yi Huang,Yu Wang,David Graf,Hsin Lin,Seng Huat Lee,John Singleton,Lujin Min,Johanna C. Palmstrom,Arun Bansil,Bahadur Singh,Zhiqiang Mao###
(1311873, 1311875)
 We reveal this through a systematic experimental andtheoretical study of the antiferromagnetic (AFM) half-Heusler compound TbPdBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 2, ',', 1],[172.0, 98, '%', 2]

H
###Surprisingly large anomalous Hall effect and giant negative magnetoresistance in half-topological semimetals|Yanglin Zhu,Cheng-Yi Huang,Yu Wang,David Graf,Hsin Lin,Seng Huat Lee,John Singleton,Lujin Min,Johanna C. Palmstrom,Arun Bansil,Bahadur Singh,Zhiqiang Mao###
(1311892, 1311892)
We not only observed an unusual AHE<missing VAR> with a surprisingly large anomalous Hallangle ThetaH (tan ThetaH  2, the largest among the antiferromagnets) inits field-driven ferromagnetic (FM) phase, but also found a distinct Hallresistivity peak in the canted AFM<missing VAR> phase within a low field range, where itsisothermal magnetization is nearly linearly dependent on the field.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 2, ',', 0],[155.0, 98, '%', 1]

H
###Surprisingly large anomalous Hall effect and giant negative magnetoresistance in half-topological semimetals|Yanglin Zhu,Cheng-Yi Huang,Yu Wang,David Graf,Hsin Lin,Seng Huat Lee,John Singleton,Lujin Min,Johanna C. Palmstrom,Arun Bansil,Bahadur Singh,Zhiqiang Mao###
(1311911, 1311911)
We not only observed an unusual AHE<missing VAR> with a surprisingly large anomalous Hallangle ThetaH (tan ThetaH  2, the largest among the antiferromagnets) inits field-driven ferromagnetic (FM) phase, but also found a distinct Hallresistivity peak in the canted AFM<missing VAR> phase within a low field range, where itsisothermal magnetization is nearly linearly dependent on the field.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 2, ',', 0],[136.0, 98, '%', 1]

H
###Surprisingly large anomalous Hall effect and giant negative magnetoresistance in half-topological semimetals|Yanglin Zhu,Cheng-Yi Huang,Yu Wang,David Graf,Hsin Lin,Seng Huat Lee,John Singleton,Lujin Min,Johanna C. Palmstrom,Arun Bansil,Bahadur Singh,Zhiqiang Mao###
(1311917, 1311917)
We not only observed an unusual AHE<missing VAR> with a surprisingly large anomalous Hallangle ThetaH (tan ThetaH  2, the largest among the antiferromagnets) inits field-driven ferromagnetic (FM) phase, but also found a distinct Hallresistivity peak in the canted AFM<missing VAR> phase within a low field range, where itsisothermal magnetization is nearly linearly dependent on the field.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 2, ',', 0],[130.0, 98, '%', 1]

F
###Surprisingly large anomalous Hall effect and giant negative magnetoresistance in half-topological semimetals|Yanglin Zhu,Cheng-Yi Huang,Yu Wang,David Graf,Hsin Lin,Seng Huat Lee,John Singleton,Lujin Min,Johanna C. Palmstrom,Arun Bansil,Bahadur Singh,Zhiqiang Mao###
(1311946, 1311946)
We not only observed an unusual AHE<missing VAR> with a surprisingly large anomalous Hallangle ThetaH (tan ThetaH  2, the largest among the antiferromagnets) inits field-driven ferromagnetic (FM) phase, but also found a distinct Hallresistivity peak in the canted AFM<missing VAR> phase within a low field range, where itsisothermal magnetization is nearly linearly dependent on the field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 2, ',', 0],[101.0, 98, '%', 1]

F
###Surprisingly large anomalous Hall effect and giant negative magnetoresistance in half-topological semimetals|Yanglin Zhu,Cheng-Yi Huang,Yu Wang,David Graf,Hsin Lin,Seng Huat Lee,John Singleton,Lujin Min,Johanna C. Palmstrom,Arun Bansil,Bahadur Singh,Zhiqiang Mao###
(1311977, 1311977)
We not only observed an unusual AHE<missing VAR> with a surprisingly large anomalous Hallangle ThetaH (tan ThetaH  2, the largest among the antiferromagnets) inits field-driven ferromagnetic (FM) phase, but also found a distinct Hallresistivity peak in the canted AFM<missing VAR> phase within a low field range, where itsisothermal magnetization is nearly linearly dependent on the field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 2, ',', 0],[70.0, 98, '%', 1]

H
###Surprisingly large anomalous Hall effect and giant negative magnetoresistance in half-topological semimetals|Yanglin Zhu,Cheng-Yi Huang,Yu Wang,David Graf,Hsin Lin,Seng Huat Lee,John Singleton,Lujin Min,Johanna C. Palmstrom,Arun Bansil,Bahadur Singh,Zhiqiang Mao###
(1312080, 1312080)
 Our in-depth theoretical modelling demonstrates that theseexotic transport properties originate from the HT<missing VAR>S state.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 2, ',', 2],[33.0, 98, '%', 1]

S
###Surprisingly large anomalous Hall effect and giant negative magnetoresistance in half-topological semimetals|Yanglin Zhu,Cheng-Yi Huang,Yu Wang,David Graf,Hsin Lin,Seng Huat Lee,John Singleton,Lujin Min,Johanna C. Palmstrom,Arun Bansil,Bahadur Singh,Zhiqiang Mao###
(1312082, 1312082)
 Our in-depth theoretical modelling demonstrates that theseexotic transport properties originate from the HT<missing VAR>S state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 2, ',', 2],[35.0, 98, '%', 1]

H
###Surprisingly large anomalous Hall effect and giant negative magnetoresistance in half-topological semimetals|Yanglin Zhu,Cheng-Yi Huang,Yu Wang,David Graf,Hsin Lin,Seng Huat Lee,John Singleton,Lujin Min,Johanna C. Palmstrom,Arun Bansil,Bahadur Singh,Zhiqiang Mao###
(1312134, 1312134)
 A minimal Berrycurvature cancellation between the trivial spin-up and nontrivial spin-downbands results not only in an extremely large AHE<missing VAR>, but it also enhances the spinpolarization of the spin-down bands substantially and thus leads to a giantnegative magnetoresistance.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[214.0, 2, ',', 3],[87.0, 98, '%', 2]

CoRuVSi
###CoRuVSi: A potential candidate for spin semimetal with promising spintronic and thermoelectric properties|Jadupati Nag,R. Venkatesh,Ajay Jha,Plamen Stamenov,P. D. Babu,Aftab Alam,K. G. Suresh###
(1312244, 1312247)
CoRuVSi A potential candidate for spin semimetal with promising spintronic and thermoelectric properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0.25,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[322.0, 50, '%', 7]

CoRuVSi
###CoRuVSi: A potential candidate for spin semimetal with promising spintronic and thermoelectric properties|Jadupati Nag,R. Venkatesh,Ajay Jha,Plamen Stamenov,P. D. Babu,Aftab Alam,K. G. Suresh###
(1312309, 1312312)
 Based on our experimental and theoretical studies, we report theidentification of the quaternary Heusler alloy, CoRuVSi as a new member of therecently discovered spin semimetals class.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0.25,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[257.0, 50, '%', 6]

CoRuVSi
###CoRuVSi: A potential candidate for spin semimetal with promising spintronic and thermoelectric properties|Jadupati Nag,R. Venkatesh,Ajay Jha,Plamen Stamenov,P. D. Babu,Aftab Alam,K. G. Suresh###
(1312401, 1312404)
 Our findings show thatCoRuVSi possesses interesting spintronic and thermoelectric properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0.25,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 50, '%', 4]

B
###CoRuVSi: A potential candidate for spin semimetal with promising spintronic and thermoelectric properties|Jadupati Nag,R. Venkatesh,Ajay Jha,Plamen Stamenov,P. D. Babu,Aftab Alam,K. G. Suresh###
(1312464, 1312464)
Magnetization data reveal a weak ferri-/antiferro magnetic ordering at lowtemperatures, with only a very small moment sim 0.13 muB/f.u.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 50, '%', 3]

CoRuVSi
###CoRuVSi: A potential candidate for spin semimetal with promising spintronic and thermoelectric properties|Jadupati Nag,R. Venkatesh,Ajay Jha,Plamen Stamenov,P. D. Babu,Aftab Alam,K. G. Suresh###
(1312594, 1312597)
 Furthermore, CoRuVSi shows a high thermopower value of 0.7m<missing VAR> Watt/ m<missing VAR>-K2 at room temperature with the dominant contribution from thesemimetallic bands, rendering it as a promising thermoelectric material aswell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0.25,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 50, '%', 1]

K2
###CoRuVSi: A potential candidate for spin semimetal with promising spintronic and thermoelectric properties|Jadupati Nag,R. Venkatesh,Ajay Jha,Plamen Stamenov,P. D. Babu,Aftab Alam,K. G. Suresh###
(1312621, 1312622)
 Furthermore, CoRuVSi shows a high thermopower value of 0.7m<missing VAR> Watt/ m<missing VAR>-K2 at room temperature with the dominant contribution from thesemimetallic bands, rendering it as a promising thermoelectric material aswell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 50, '%', 1]

V
###CoRuVSi: A potential candidate for spin semimetal with promising spintronic and thermoelectric properties|Jadupati Nag,R. Venkatesh,Ajay Jha,Plamen Stamenov,P. D. Babu,Aftab Alam,K. G. Suresh###
(1312725, 1312725)
 Our ab-initio simulation not only confirms a unique semimetallic feature,but also reveals that the band structure hosts a linear band crossing at sim-0.4 e<missing VAR>V below the Fermi level incorporated by a band-inversion.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 50, '%', 2]

In
###CoRuVSi: A potential candidate for spin semimetal with promising spintronic and thermoelectric properties|Jadupati Nag,R. Venkatesh,Ajay Jha,Plamen Stamenov,P. D. Babu,Aftab Alam,K. G. Suresh###
(1312746, 1312746)
 In addition,the observed topological non-trivial features of the band structure iscorroborated with the simulated Berry curvature, intrinsic anomalous Hallconductivity and the Fermi surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[177.0, 50, '%', 3]

TiN
###Probing electron-electron interaction along with superconducting fluctuations in disordered TiN thin films|Sachin Yadav,Vinay Kaushik,M. P. Saravanan,Sangeeta Sahoo###
(1312915, 1312916)
Probing electron-electron interaction along with superconducting fluctuations in disordered TiN thin films.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 2, 'D', 1],[368.0, 1.0, 'Interestingly', 6]

I
###Probing electron-electron interaction along with superconducting fluctuations in disordered TiN thin films|Sachin Yadav,Vinay Kaushik,M. P. Saravanan,Sangeeta Sahoo###
(1312952, 1312952)
 Here, we demonstrate an interplay between superconducting fluctuations andelectron-electron interaction (EEI) by low temperature magnetotransportmeasurements for a set of 2D disordered TiN thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 2, 'D', 0],[332.0, 1.0, 'Interestingly', 5]

TiN
###Probing electron-electron interaction along with superconducting fluctuations in disordered TiN thin films|Sachin Yadav,Vinay Kaushik,M. P. Saravanan,Sangeeta Sahoo###
(1312977, 1312978)
 Here, we demonstrate an interplay between superconducting fluctuations andelectron-electron interaction (EEI) by low temperature magnetotransportmeasurements for a set of 2D disordered TiN thin films.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 2, 'D', 0],[306.0, 1.0, 'Interestingly', 5]

W
###Probing electron-electron interaction along with superconducting fluctuations in disordered TiN thin films|Sachin Yadav,Vinay Kaushik,M. P. Saravanan,Sangeeta Sahoo###
(1313059, 1313059)
 The upturn in R(T) above T<missing VAR>corresponds to weak localization (WL) and/or EEI.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 2, 'D', 2],[225.0, 1.0, 'Interestingly', 3]

I
###Probing electron-electron interaction along with superconducting fluctuations in disordered TiN thin films|Sachin Yadav,Vinay Kaushik,M. P. Saravanan,Sangeeta Sahoo###
(1313069, 1313069)
 The upturn in R(T) above T<missing VAR>corresponds to weak localization (WL) and/or EEI.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 2, 'D', 2],[215.0, 1.0, 'Interestingly', 3]

I
###Probing electron-electron interaction along with superconducting fluctuations in disordered TiN thin films|Sachin Yadav,Vinay Kaushik,M. P. Saravanan,Sangeeta Sahoo###
(1313120, 1313120)
 By the temperature and fielddependences of the observed resistance, we show that the upturn in R(T)originates mainly from EEI with a negligible contribution from WL<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 2, 'D', 3],[164.0, 1.0, 'Interestingly', 2]

W
###Probing electron-electron interaction along with superconducting fluctuations in disordered TiN thin films|Sachin Yadav,Vinay Kaushik,M. P. Saravanan,Sangeeta Sahoo###
(1313132, 1313132)
 By the temperature and fielddependences of the observed resistance, we show that the upturn in R(T)originates mainly from EEI with a negligible contribution from WL<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[159.0, 2, 'D', 3],[152.0, 1.0, 'Interestingly', 2]

Tc
###Probing electron-electron interaction along with superconducting fluctuations in disordered TiN thin films|Sachin Yadav,Vinay Kaushik,M. P. Saravanan,Sangeeta Sahoo###
(1313165, 1313165)
 Further, wehave used the modified Larkins electron-electron attraction strengthbeta(T<missing VAR>/Tc), containing a field induced pair breaking parameter, in theMaki-Thompson (MT) superconducting fluctuation term.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[192.0, 2, 'D', 4],[119.0, 1.0, 'Interestingly', 1]

Tc
###Probing electron-electron interaction along with superconducting fluctuations in disordered TiN thin films|Sachin Yadav,Vinay Kaushik,M. P. Saravanan,Sangeeta Sahoo###
(1313223, 1313223)
 Here, the temperaturedependence of the beta(T<missing VAR>/Tc) obtained from the magnetoresistance analysis showsa diverging behavior close to Tc and it remains almost constant at highertemperature within the limit of ln(T<missing VAR>/Tc) < 1. Interestingly, the variation ofbeta(T<missing VAR>/Tc) on the reduced temperature (T<missing VAR>/Tc) offers a common trend which hasbeen closely followed by all the concerned samples presented in this study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[250.0, 2, 'D', 5],[61.0, 1.0, 'Interestingly', 0]

Tc
###Probing electron-electron interaction along with superconducting fluctuations in disordered TiN thin films|Sachin Yadav,Vinay Kaushik,M. P. Saravanan,Sangeeta Sahoo###
(1313249, 1313249)
 Here, the temperaturedependence of the beta(T<missing VAR>/Tc) obtained from the magnetoresistance analysis showsa diverging behavior close to Tc and it remains almost constant at highertemperature within the limit of ln(T<missing VAR>/Tc) < 1. Interestingly, the variation ofbeta(T<missing VAR>/Tc) on the reduced temperature (T<missing VAR>/Tc) offers a common trend which hasbeen closely followed by all the concerned samples presented in this study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[276.0, 2, 'D', 5],[35.0, 1.0, 'Interestingly', 0]

Tc
###Probing electron-electron interaction along with superconducting fluctuations in disordered TiN thin films|Sachin Yadav,Vinay Kaushik,M. P. Saravanan,Sangeeta Sahoo###
(1313280, 1313280)
 Here, the temperaturedependence of the beta(T<missing VAR>/Tc) obtained from the magnetoresistance analysis showsa diverging behavior close to Tc and it remains almost constant at highertemperature within the limit of ln(T<missing VAR>/Tc) < 1. Interestingly, the variation ofbeta(T<missing VAR>/Tc) on the reduced temperature (T<missing VAR>/Tc) offers a common trend which hasbeen closely followed by all the concerned samples presented in this study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[307.0, 2, 'D', 5],[4.0, 1.0, 'Interestingly', 0]

Tc
###Probing electron-electron interaction along with superconducting fluctuations in disordered TiN thin films|Sachin Yadav,Vinay Kaushik,M. P. Saravanan,Sangeeta Sahoo###
(1313298, 1313298)
 Here, the temperaturedependence of the beta(T<missing VAR>/Tc) obtained from the magnetoresistance analysis showsa diverging behavior close to Tc and it remains almost constant at highertemperature within the limit of ln(T<missing VAR>/Tc) < 1. Interestingly, the variation ofbeta(T<missing VAR>/Tc) on the reduced temperature (T<missing VAR>/Tc) offers a common trend which hasbeen closely followed by all the concerned samples presented in this study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[325.0, 2, 'D', 5],[14.0, 1.0, 'Interestingly', 0]

Tc
###Probing electron-electron interaction along with superconducting fluctuations in disordered TiN thin films|Sachin Yadav,Vinay Kaushik,M. P. Saravanan,Sangeeta Sahoo###
(1313312, 1313312)
 Here, the temperaturedependence of the beta(T<missing VAR>/Tc) obtained from the magnetoresistance analysis showsa diverging behavior close to Tc and it remains almost constant at highertemperature within the limit of ln(T<missing VAR>/Tc) < 1. Interestingly, the variation ofbeta(T<missing VAR>/Tc) on the reduced temperature (T<missing VAR>/Tc) offers a common trend which hasbeen closely followed by all the concerned samples presented in this study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[339.0, 2, 'D', 5],[28.0, 1.0, 'Interestingly', 0]

Tc
###Probing electron-electron interaction along with superconducting fluctuations in disordered TiN thin films|Sachin Yadav,Vinay Kaushik,M. P. Saravanan,Sangeeta Sahoo###
(1313411, 1313411)
Finally, the temperature dependence of inverse phase scattering time , asobtained from the magnetoresistance analysis, clearly shows two differentregimes; the first one close to Tc follows the Ginzburg-Landau relaxation rate, whereas, the second one at high temperature varies almost linearly withtemperature indicating the dominance of inelastic electron-electron scatteringfor the dephasing mechanism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[438.0, 2, 'D', 6],[127.0, 1.0, 'Interestingly', 1]

N
###Normal state property of the t-J model|Yu-Liang Liu###
(1313578, 1313578)
 Using the spin-hole coherent state representation and taking a long rangeantiferromagnetic Ne<missing VAR>el order as a background of the localized spin degreepart, we have studied the normal state behavior of the t-J model, and shownthat a strongly short-range antiferromagnetic correlation of the localized spindegree part is responsible for the anomalous non-Korringa-like relaxationbehavior of the planar copper spin, the Korringa-like behavior of the planaroxygen spin may derive from the charge degree part describing a Zhang-Ricespin-singlet; The charge degree part feels a strongly staggered magnetic fieldinduced by this short-range antiferromagnetic correlation as a doping holehopping, this staggered magnetic field enforces the charge degrees to havedifferent responses to external magnetic and electric fields and to show tworelaxation rate behaviors corresponding to the planar resistivity and Hallangle, respectively.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[311.0, 3, ',', 1],[327.0, 4, ',', 1]

H
###Correlated-electron theory of strongly anisotropic metamagnets|K. Held,M. Ulmke,N. Bl"umer,D. Vollhardt###
(1314086, 1314086)
 To this end the Hubbard model withstaggered magnetization m<missing VAR>st along an easy axis e<missing VAR> in a magnetic field H  e<missing VAR> isstudied both analytically and numerically within the dynamical mean fieldtheory (DMFT).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Correlated-electron theory of strongly anisotropic metamagnets|K. Held,M. Ulmke,N. Bl"umer,D. Vollhardt###
(1314120, 1314120)
 To this end the Hubbard model withstaggered magnetization m<missing VAR>st along an easy axis e<missing VAR> in a magnetic field H  e<missing VAR> isstudied both analytically and numerically within the dynamical mean fieldtheory (DMFT).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Correlated-electron theory of strongly anisotropic metamagnets|K. Held,M. Ulmke,N. Bl"umer,D. Vollhardt###
(1314125, 1314125)
 At intermediate couplings the self-consistent DMFT<missing VAR> equations,which become exact in the limit of large coordination number, are solved byfinite temperature Quantum Monte Carlo techniques.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Correlated-electron theory of strongly anisotropic metamagnets|K. Held,M. Ulmke,N. Bl"umer,D. Vollhardt###
(1314139, 1314139)
 At intermediate couplings the self-consistent DMFT<missing VAR> equations,which become exact in the limit of large coordination number, are solved byfinite temperature Quantum Monte Carlo techniques.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Correlated-electron theory of strongly anisotropic metamagnets|K. Held,M. Ulmke,N. Bl"umer,D. Vollhardt###
(1314232, 1314232)
 At half filling the metamagnetictransitions are found to change from first order at low temperatures to secondorder near the Neel temperature, implying the existence of a multicriticalpoint.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Correlated-electron theory of strongly anisotropic metamagnets|K. Held,M. Ulmke,N. Bl"umer,D. Vollhardt###
(1314276, 1314276)
 At half filling the metamagnetictransitions are found to change from first order at low temperatures to secondorder near the Neel temperature, implying the existence of a multicriticalpoint.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeBr2
###Correlated-electron theory of strongly anisotropic metamagnets|K. Held,M. Ulmke,N. Bl"umer,D. Vollhardt###
(1314375, 1314377)
 These results are related to known propertiesof insulating metamagnets such as FeBr2, metallic metamagnets such as UPdGe,and the giant and colossal magnetoresistance found in a number of magnetic bulksystems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

UPdGe
###Correlated-electron theory of strongly anisotropic metamagnets|K. Held,M. Ulmke,N. Bl"umer,D. Vollhardt###
(1314388, 1314390)
 These results are related to known propertiesof insulating metamagnets such as FeBr2, metallic metamagnets such as UPdGe,and the giant and colossal magnetoresistance found in a number of magnetic bulksystems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tl2Mn2O7
###Intermediate Valence Model for the Colossal Magnetoresistance in Tl_{2}Mn_{2}O_{7}|C. I. Ventura,B. Alascio###
(1314448, 1314453)
Intermediate Valence Model for the Colossal Magnetoresistance in Tl2Mn2O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6363636363636364,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tl2Mn2O7
###Intermediate Valence Model for the Colossal Magnetoresistance in Tl_{2}Mn_{2}O_{7}|C. I. Ventura,B. Alascio###
(1314466, 1314471)
 The colossal magnetoresistance exhibited by Tl2Mn2O7 is aninteresting phenomenon, as it is very similar to that found in perovskitemanganese oxides although the compound differs both in its crystallinestructure and electronic properties from the manganites.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6363636363636364,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Intermediate Valence Model for the Colossal Magnetoresistance in Tl_{2}Mn_{2}O_{7}|C. I. Ventura,B. Alascio###
(1314540, 1314540)
 At the same time,other pyrochlore compounds, though sharing the same structure withTl2Mn2O7, do not exhibit the strong coupling between magnetism andtransport properties found in this material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tl2Mn2O7
###Intermediate Valence Model for the Colossal Magnetoresistance in Tl_{2}Mn_{2}O_{7}|C. I. Ventura,B. Alascio###
(1314570, 1314575)
 At the same time,other pyrochlore compounds, though sharing the same structure withTl2Mn2O7, do not exhibit the strong coupling between magnetism andtransport properties found in this material.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6363636363636364,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Intermediate Valence Model for the Colossal Magnetoresistance in Tl_{2}Mn_{2}O_{7}|C. I. Ventura,B. Alascio###
(1314635, 1314635)
 Mostly due to the absence ofevidence for significant doping into the Mn-O sublattice, and the tendency ofTl to form conduction bands, the traditional double exchange mechanismmentioned in connection with manganites does not seem suitable to explain theexperimental results in this case.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Intermediate Valence Model for the Colossal Magnetoresistance in Tl_{2}Mn_{2}O_{7}|C. I. Ventura,B. Alascio###
(1314637, 1314637)
 Mostly due to the absence ofevidence for significant doping into the Mn-O sublattice, and the tendency ofTl to form conduction bands, the traditional double exchange mechanismmentioned in connection with manganites does not seem suitable to explain theexperimental results in this case.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tl
###Intermediate Valence Model for the Colossal Magnetoresistance in Tl_{2}Mn_{2}O_{7}|C. I. Ventura,B. Alascio###
(1314651, 1314651)
 Mostly due to the absence ofevidence for significant doping into the Mn-O sublattice, and the tendency ofTl to form conduction bands, the traditional double exchange mechanismmentioned in connection with manganites does not seem suitable to explain theexperimental results in this case.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tl2Mn2O7
###Intermediate Valence Model for the Colossal Magnetoresistance in Tl_{2}Mn_{2}O_{7}|C. I. Ventura,B. Alascio###
(1314719, 1314724)
 We propose a model for Tl2Mn2O7consisting of a lattice of intermediate valence ions fluctuating between twomagnetic configurations, representing Mn-3d<missing VAR> orbitals, hybridized with aconduction band, which we associate with Tl.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6363636363636364,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Intermediate Valence Model for the Colossal Magnetoresistance in Tl_{2}Mn_{2}O_{7}|C. I. Ventura,B. Alascio###
(1314757, 1314757)
 We propose a model for Tl2Mn2O7consisting of a lattice of intermediate valence ions fluctuating between twomagnetic configurations, representing Mn-3d<missing VAR> orbitals, hybridized with aconduction band, which we associate with Tl.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tl
###Intermediate Valence Model for the Colossal Magnetoresistance in Tl_{2}Mn_{2}O_{7}|C. I. Ventura,B. Alascio###
(1314785, 1314785)
 We propose a model for Tl2Mn2O7consisting of a lattice of intermediate valence ions fluctuating between twomagnetic configurations, representing Mn-3d<missing VAR> orbitals, hybridized with aconduction band, which we associate with Tl.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tm
###Intermediate Valence Model for the Colossal Magnetoresistance in Tl_{2}Mn_{2}O_{7}|C. I. Ventura,B. Alascio###
(1314813, 1314813)
 This model had been proposedoriginally for the analysis of intermediate valence Tm compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tl2Mn2O7
###Intermediate Valence Model for the Colossal Magnetoresistance in Tl_{2}Mn_{2}O_{7}|C. I. Ventura,B. Alascio###
(1314852, 1314857)
 With asimplified treatment of the model we obtain the electronic structure andtransport properties of Tl2Mn2O7, with good qualitative agreement toexperiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6363636363636364,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Spin Tunneling in Conducting Oxides|Alexander Bratkovsky###
(1315125, 1315125)
 Wefind that tunneling via resonant defect states in the barrier radicallydecreases the TMR (down to 4% with Fe-based electrodes), and a resonant tunneldiode structure would give a TMR of about 8%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 30, '%', 2],[5.0, 4, '%', 0],[35.0, 8, '%', 0],[176.0, 100, '%', 3],[265.0, 1000, 'percent', 4]

CrO2/TiO2
###Spin Tunneling in Conducting Oxides|Alexander Bratkovsky###
(1315406, 1315412)
 Examples of half-metallic systems areCrO2/TiO2 and CrO2/RuO2, and an account of their peculiar bandstructures is presented.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[397.0, 30, '%', 7],[286.0, 4, '%', 5],[246.0, 8, '%', 5],[105.0, 100, '%', 2],[16.0, 1000, 'percent', 1]

CrO2/RuO2
###Spin Tunneling in Conducting Oxides|Alexander Bratkovsky###
(1315416, 1315422)
 Examples of half-metallic systems areCrO2/TiO2 and CrO2/RuO2, and an account of their peculiar bandstructures is presented.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[407.0, 30, '%', 7],[296.0, 4, '%', 5],[256.0, 8, '%', 5],[115.0, 100, '%', 2],[26.0, 1000, 'percent', 1]

C
###Spin Tunneling in Conducting Oxides|Alexander Bratkovsky###
(1315463, 1315463)
 The implications and relation of these systems to CMRmaterials which are nearly half-metallic, are discussed.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[454.0, 30, '%', 8],[343.0, 4, '%', 6],[303.0, 8, '%', 6],[162.0, 100, '%', 3],[73.0, 1000, 'percent', 2]

OS
###The Density of States of hole-doped Manganites: A Scanning Tunneling Microscopy/Spectroscopy study|Amlan Biswas,Suja Elizabeth,A. K. Raychaudhuri,H. L. Bhat###
(1316201, 1316202)
 While for temperatures belowTc, a finite D<missing VAR>OS is observed at Ef, for temperatures near Tc a hardgap opens up in the density of states near Ef.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[190.0, 400, 'K', 3]

La2CuO4
###Non-linear effects in hopping conduction of single-crystal La_{2}CuO_{4 + δ}|B. I. Belevtsev,N. V. Dalakova,A. S. Panfilov###
(1316436, 1316440)
Non-linear effects in hopping conduction of single-crystal La2CuO4  .
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 25, 'V', 2],[92.0, 5, 'K', 2],[99.0, 300, 'K', 2],[114.0, 0.1, 'V', 3],[180.0, 0.1, 'V', 4],[252.0, 20, 'K', 5],[263.0, 20, 'K', 5],[290.0, 20, 'K', 6],[410.0, 20, 'K', 8],[452.0, 20, 'K', 8]

La2CuO4
###Non-linear effects in hopping conduction of single-crystal La_{2}CuO_{4 + δ}|B. I. Belevtsev,N. V. Dalakova,A. S. Panfilov###
(1316468, 1316472)
 The unusual non-linear effects in hopping conduction of single-crystalLa2CuO4  delta with excess oxygen has been observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 25, 'V', 1],[60.0, 5, 'K', 1],[67.0, 300, 'K', 1],[82.0, 0.1, 'V', 2],[148.0, 0.1, 'V', 3],[220.0, 20, 'K', 4],[231.0, 20, 'K', 4],[258.0, 20, 'K', 5],[378.0, 20, 'K', 7],[420.0, 20, 'K', 7]

U
###Non-linear effects in hopping conduction of single-crystal La_{2}CuO_{4 + δ}|B. I. Belevtsev,N. V. Dalakova,A. S. Panfilov###
(1316511, 1316511)
 The resistance ismeasured as a function of applied voltage U (10-3 V - 25 V) in thetemperature range 5 K < T<missing VAR> < 300 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 25, 'V', 0],[21.0, 5, 'K', 0],[28.0, 300, 'K', 0],[43.0, 0.1, 'V', 1],[109.0, 0.1, 'V', 2],[181.0, 20, 'K', 3],[192.0, 20, 'K', 3],[219.0, 20, 'K', 4],[339.0, 20, 'K', 6],[381.0, 20, 'K', 6]

V
###Non-linear effects in hopping conduction of single-crystal La_{2}CuO_{4 + δ}|B. I. Belevtsev,N. V. Dalakova,A. S. Panfilov###
(1316518, 1316518)
 The resistance ismeasured as a function of applied voltage U (10-3 V - 25 V) in thetemperature range 5 K < T<missing VAR> < 300 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 25, 'V', 0],[14.0, 5, 'K', 0],[21.0, 300, 'K', 0],[36.0, 0.1, 'V', 1],[102.0, 0.1, 'V', 2],[174.0, 20, 'K', 3],[185.0, 20, 'K', 3],[212.0, 20, 'K', 4],[332.0, 20, 'K', 6],[374.0, 20, 'K', 6]

At
###Non-linear effects in hopping conduction of single-crystal La_{2}CuO_{4 + δ}|B. I. Belevtsev,N. V. Dalakova,A. S. Panfilov###
(1316542, 1316542)
 At relatively high voltage (U > 0.1 V) theconduction of sample investigated corresponds well to Motts<missing VAR> variable-rangehopping (VR<missing VAR>H).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 25, 'V', 1],[10.0, 5, 'K', 1],[3.0, 300, 'K', 1],[12.0, 0.1, 'V', 0],[78.0, 0.1, 'V', 1],[150.0, 20, 'K', 2],[161.0, 20, 'K', 2],[188.0, 20, 'K', 3],[308.0, 20, 'K', 5],[350.0, 20, 'K', 5]

U
###Non-linear effects in hopping conduction of single-crystal La_{2}CuO_{4 + δ}|B. I. Belevtsev,N. V. Dalakova,A. S. Panfilov###
(1316551, 1316551)
 At relatively high voltage (U > 0.1 V) theconduction of sample investigated corresponds well to Motts<missing VAR> variable-rangehopping (VR<missing VAR>H).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 25, 'V', 1],[19.0, 5, 'K', 1],[12.0, 300, 'K', 1],[3.0, 0.1, 'V', 0],[69.0, 0.1, 'V', 1],[141.0, 20, 'K', 2],[152.0, 20, 'K', 2],[179.0, 20, 'K', 3],[299.0, 20, 'K', 5],[341.0, 20, 'K', 5]

V
###Non-linear effects in hopping conduction of single-crystal La_{2}CuO_{4 + δ}|B. I. Belevtsev,N. V. Dalakova,A. S. Panfilov###
(1316585, 1316585)
 At relatively high voltage (U > 0.1 V) theconduction of sample investigated corresponds well to Motts<missing VAR> variable-rangehopping (VR<missing VAR>H).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 25, 'V', 1],[53.0, 5, 'K', 1],[46.0, 300, 'K', 1],[31.0, 0.1, 'V', 0],[35.0, 0.1, 'V', 1],[107.0, 20, 'K', 2],[118.0, 20, 'K', 2],[145.0, 20, 'K', 3],[265.0, 20, 'K', 5],[307.0, 20, 'K', 5]

H
###Non-linear effects in hopping conduction of single-crystal La_{2}CuO_{4 + δ}|B. I. Belevtsev,N. V. Dalakova,A. S. Panfilov###
(1316587, 1316587)
 At relatively high voltage (U > 0.1 V) theconduction of sample investigated corresponds well to Motts<missing VAR> variable-rangehopping (VR<missing VAR>H).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 25, 'V', 1],[55.0, 5, 'K', 1],[48.0, 300, 'K', 1],[33.0, 0.1, 'V', 0],[33.0, 0.1, 'V', 1],[105.0, 20, 'K', 2],[116.0, 20, 'K', 2],[143.0, 20, 'K', 3],[263.0, 20, 'K', 5],[305.0, 20, 'K', 5]

V
###Non-linear effects in hopping conduction of single-crystal La_{2}CuO_{4 + δ}|B. I. Belevtsev,N. V. Dalakova,A. S. Panfilov###
(1316651, 1316651)
 An unusual conduction behavior is found, however, in low voltagerange (approximately below 0.1 V), where the influence of electric field and(or) electron heating effect on VR<missing VAR>H ought to be neglected.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 25, 'V', 2],[119.0, 5, 'K', 2],[112.0, 300, 'K', 2],[97.0, 0.1, 'V', 1],[31.0, 0.1, 'V', 0],[41.0, 20, 'K', 1],[52.0, 20, 'K', 1],[79.0, 20, 'K', 2],[199.0, 20, 'K', 4],[241.0, 20, 'K', 4]

H
###Non-linear effects in hopping conduction of single-crystal La_{2}CuO_{4 + δ}|B. I. Belevtsev,N. V. Dalakova,A. S. Panfilov###
(1316653, 1316653)
 An unusual conduction behavior is found, however, in low voltagerange (approximately below 0.1 V), where the influence of electric field and(or) electron heating effect on VR<missing VAR>H ought to be neglected.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 25, 'V', 2],[121.0, 5, 'K', 2],[114.0, 300, 'K', 2],[99.0, 0.1, 'V', 1],[33.0, 0.1, 'V', 0],[39.0, 20, 'K', 1],[50.0, 20, 'K', 1],[77.0, 20, 'K', 2],[197.0, 20, 'K', 4],[239.0, 20, 'K', 4]

U
###Non-linear effects in hopping conduction of single-crystal La_{2}CuO_{4 + δ}|B. I. Belevtsev,N. V. Dalakova,A. S. Panfilov###
(1316685, 1316685)
 Here we haveobserved strong increase in resistance at increasing U at T<missing VAR> < 20 K, whereas atT<missing VAR> > 20 K the resistance decreases with increasing U.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 25, 'V', 3],[153.0, 5, 'K', 3],[146.0, 300, 'K', 3],[131.0, 0.1, 'V', 2],[65.0, 0.1, 'V', 1],[7.0, 20, 'K', 0],[18.0, 20, 'K', 0],[45.0, 20, 'K', 1],[165.0, 20, 'K', 3],[207.0, 20, 'K', 3]

U
###Non-linear effects in hopping conduction of single-crystal La_{2}CuO_{4 + δ}|B. I. Belevtsev,N. V. Dalakova,A. S. Panfilov###
(1316715, 1316715)
 Here we haveobserved strong increase in resistance at increasing U at T<missing VAR> < 20 K, whereas atT<missing VAR> > 20 K the resistance decreases with increasing U.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[194.0, 25, 'V', 3],[183.0, 5, 'K', 3],[176.0, 300, 'K', 3],[161.0, 0.1, 'V', 2],[95.0, 0.1, 'V', 1],[23.0, 20, 'K', 0],[12.0, 20, 'K', 0],[15.0, 20, 'K', 1],[135.0, 20, 'K', 3],[177.0, 20, 'K', 3]

At
###Non-linear effects in hopping conduction of single-crystal La_{2}CuO_{4 + δ}|B. I. Belevtsev,N. V. Dalakova,A. S. Panfilov###
(1316840, 1316840)
 At low enough temperature (below 20 K) the surface layerwith increased oxygen concentration is presumed to consist of disconnectedsuperconducting regions (with Tc about 20 K) in poor-conducting matrix.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[319.0, 25, 'V', 6],[308.0, 5, 'K', 6],[301.0, 300, 'K', 6],[286.0, 0.1, 'V', 5],[220.0, 0.1, 'V', 4],[148.0, 20, 'K', 3],[137.0, 20, 'K', 3],[110.0, 20, 'K', 2],[10.0, 20, 'K', 0],[52.0, 20, 'K', 0]

La2
###Hall Effect of La2/3(Ca,Pb)1/3MnO3 Single Crystals near the Critical Temperature|S. H. Chun,M. B. Salamon,P. D. Han###
(1317009, 1317010)
Hall Effect of La2/3(Ca,Pb)1/3MnO3 Single Crystals near the Critical Temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 5, 'K', 3],[216.0, 0.33, 'holes', 4]

Ca
###Hall Effect of La2/3(Ca,Pb)1/3MnO3 Single Crystals near the Critical Temperature|S. H. Chun,M. B. Salamon,P. D. Han###
(1317014, 1317014)
Hall Effect of La2/3(Ca,Pb)1/3MnO3 Single Crystals near the Critical Temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 5, 'K', 3],[212.0, 0.33, 'holes', 4]

Pb
###Hall Effect of La2/3(Ca,Pb)1/3MnO3 Single Crystals near the Critical Temperature|S. H. Chun,M. B. Salamon,P. D. Han###
(1317016, 1317016)
Hall Effect of La2/3(Ca,Pb)1/3MnO3 Single Crystals near the Critical Temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 5, 'K', 3],[210.0, 0.33, 'holes', 4]

MnO3
###Hall Effect of La2/3(Ca,Pb)1/3MnO3 Single Crystals near the Critical Temperature|S. H. Chun,M. B. Salamon,P. D. Han###
(1317021, 1317023)
Hall Effect of La2/3(Ca,Pb)1/3MnO3 Single Crystals near the Critical Temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 5, 'K', 3],[203.0, 0.33, 'holes', 4]

La2
###Hall Effect of La2/3(Ca,Pb)1/3MnO3 Single Crystals near the Critical Temperature|S. H. Chun,M. B. Salamon,P. D. Han###
(1317051, 1317052)
 The Hall resistivity rhoxy of a La2/3(Ca,Pb)1/3MnO3 single crystalhas been measured as a function of temperature and field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 5, 'K', 2],[174.0, 0.33, 'holes', 3]

Ca
###Hall Effect of La2/3(Ca,Pb)1/3MnO3 Single Crystals near the Critical Temperature|S. H. Chun,M. B. Salamon,P. D. Han###
(1317056, 1317056)
 The Hall resistivity rhoxy of a La2/3(Ca,Pb)1/3MnO3 single crystalhas been measured as a function of temperature and field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 5, 'K', 2],[170.0, 0.33, 'holes', 3]

Pb
###Hall Effect of La2/3(Ca,Pb)1/3MnO3 Single Crystals near the Critical Temperature|S. H. Chun,M. B. Salamon,P. D. Han###
(1317058, 1317058)
 The Hall resistivity rhoxy of a La2/3(Ca,Pb)1/3MnO3 single crystalhas been measured as a function of temperature and field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 5, 'K', 2],[168.0, 0.33, 'holes', 3]

MnO3
###Hall Effect of La2/3(Ca,Pb)1/3MnO3 Single Crystals near the Critical Temperature|S. H. Chun,M. B. Salamon,P. D. Han###
(1317063, 1317065)
 The Hall resistivity rhoxy of a La2/3(Ca,Pb)1/3MnO3 single crystalhas been measured as a function of temperature and field.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 5, 'K', 2],[161.0, 0.33, 'holes', 3]

At
###Hall Effect of La2/3(Ca,Pb)1/3MnO3 Single Crystals near the Critical Temperature|S. H. Chun,M. B. Salamon,P. D. Han###
(1317119, 1317119)
 At 5 K, rhoxy ispositive and linear in field, indicating that the anomalous contribution R<missing VAR>Sis negligible.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[1.0, 5, 'K', 0],[107.0, 0.33, 'holes', 1]

S
###Hall Effect of La2/3(Ca,Pb)1/3MnO3 Single Crystals near the Critical Temperature|S. H. Chun,M. B. Salamon,P. D. Han###
(1317151, 1317151)
 At 5 K, rhoxy ispositive and linear in field, indicating that the anomalous contribution R<missing VAR>Sis negligible.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 5, 'K', 0],[75.0, 0.33, 'holes', 1]

Mn
###Hall Effect of La2/3(Ca,Pb)1/3MnO3 Single Crystals near the Critical Temperature|S. H. Chun,M. B. Salamon,P. D. Han###
(1317189, 1317189)
 However, the effective carrier density in a free electron modelis n<missing VAR>eff2.4 holes/Mn, even larger than the 0.85-1.9 holes/Mn reported forthin-films and far larger than the 0.33 holes/Mn expected from the dopinglevel.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 5, 'K', 1],[37.0, 0.33, 'holes', 0]

Mn
###Hall Effect of La2/3(Ca,Pb)1/3MnO3 Single Crystals near the Critical Temperature|S. H. Chun,M. B. Salamon,P. D. Han###
(1317206, 1317206)
 However, the effective carrier density in a free electron modelis n<missing VAR>eff2.4 holes/Mn, even larger than the 0.85-1.9 holes/Mn reported forthin-films and far larger than the 0.33 holes/Mn expected from the dopinglevel.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 5, 'K', 1],[20.0, 0.33, 'holes', 0]

Mn
###Hall Effect of La2/3(Ca,Pb)1/3MnO3 Single Crystals near the Critical Temperature|S. H. Chun,M. B. Salamon,P. D. Han###
(1317228, 1317228)
 However, the effective carrier density in a free electron modelis n<missing VAR>eff2.4 holes/Mn, even larger than the 0.85-1.9 holes/Mn reported forthin-films and far larger than the 0.33 holes/Mn expected from the dopinglevel.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 5, 'K', 1],[2.0, 0.33, 'holes', 0]

As
###Hall Effect of La2/3(Ca,Pb)1/3MnO3 Single Crystals near the Critical Temperature|S. H. Chun,M. B. Salamon,P. D. Han###
(1317242, 1317242)
 As temperature increases, a strong, negative contribution to rhoxyappears, that we ascribe to R<missing VAR>S.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 5, 'K', 2],[16.0, 0.33, 'holes', 1]

S
###Hall Effect of La2/3(Ca,Pb)1/3MnO3 Single Crystals near the Critical Temperature|S. H. Chun,M. B. Salamon,P. D. Han###
(1317276, 1317276)
 As temperature increases, a strong, negative contribution to rhoxyappears, that we ascribe to R<missing VAR>S.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 5, 'K', 2],[50.0, 0.33, 'holes', 1]

B
###Hall Effect of La2/3(Ca,Pb)1/3MnO3 Single Crystals near the Critical Temperature|S. H. Chun,M. B. Salamon,P. D. Han###
(1317300, 1317300)
 Using detailed magnetization data, we separatethe ordinary (propto B) and anomalous (propto M) contributions.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[180.0, 5, 'K', 3],[74.0, 0.33, 'holes', 2]

C
###Hall Effect of La2/3(Ca,Pb)1/3MnO3 Single Crystals near the Critical Temperature|S. H. Chun,M. B. Salamon,P. D. Han###
(1317319, 1317319)
 Below T<missing VAR>C,R<missing VAR>S propto rhoxx, indicating that magnetic skew scattering is the dominantmechanism in the metallic ferromagnetic regime.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[199.0, 5, 'K', 4],[93.0, 0.33, 'holes', 3]

S
###Hall Effect of La2/3(Ca,Pb)1/3MnO3 Single Crystals near the Critical Temperature|S. H. Chun,M. B. Salamon,P. D. Han###
(1317324, 1317324)
 Below T<missing VAR>C,R<missing VAR>S propto rhoxx, indicating that magnetic skew scattering is the dominantmechanism in the metallic ferromagnetic regime.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[204.0, 5, 'K', 4],[98.0, 0.33, 'holes', 3]

At
###Hall Effect of La2/3(Ca,Pb)1/3MnO3 Single Crystals near the Critical Temperature|S. H. Chun,M. B. Salamon,P. D. Han###
(1317362, 1317362)
 At and above theresistivity-peak temperature, we find that rhoxy/rhoxxM<missing VAR> is a constant,independent of temperature and field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[242.0, 5, 'K', 5],[136.0, 0.33, 'holes', 4]

La0.5Ca0.5-xBa
###Transport and magnetic anomalies due to A-site ionic size mismatch in La$_{0.5}$Ca$_{0.5-x}$Ba_{x}MnO$_3$|R. Mallik,E. S. Reddy,P. L. Paulose,Subham Mazumdar,E. V. Sampathkumaran###
(1317492, 1317498)
Transport and magnetic anomalies due to A-site ionic size mismatch in La0.5Ca0.5-xBax<missing VAR>MnO3.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[171.0, 0.1, ',', 3],[222.0, 0.3, 'compounds', 5],[244.0, 300, 'K', 5],[293.0, 30, 'K', 5],[328.0, 235, 'K', 6]

MnO3
###Transport and magnetic anomalies due to A-site ionic size mismatch in La$_{0.5}$Ca$_{0.5-x}$Ba_{x}MnO$_3$|R. Mallik,E. S. Reddy,P. L. Paulose,Subham Mazumdar,E. V. Sampathkumaran###
(1317500, 1317502)
Transport and magnetic anomalies due to A-site ionic size mismatch in La0.5Ca0.5-xBax<missing VAR>MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 0.1, ',', 3],[218.0, 0.3, 'compounds', 5],[240.0, 300, 'K', 5],[289.0, 30, 'K', 5],[324.0, 235, 'K', 6]

Ba
###Transport and magnetic anomalies due to A-site ionic size mismatch in La$_{0.5}$Ca$_{0.5-x}$Ba_{x}MnO$_3$|R. Mallik,E. S. Reddy,P. L. Paulose,Subham Mazumdar,E. V. Sampathkumaran###
(1317556, 1317556)
 We present results of electrical resistivity, magnetoresistance and ac and dcmagnetic susceptibility on polycrystalline samples of the typeLa(0.5)Ca(0.5-x)Ba(x)MnO(3) synthesized under identical heat treatmentconditions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 0.1, ',', 2],[164.0, 0.3, 'compounds', 4],[186.0, 300, 'K', 4],[235.0, 30, 'K', 4],[270.0, 235, 'K', 5]

Ba
###Transport and magnetic anomalies due to A-site ionic size mismatch in La$_{0.5}$Ca$_{0.5-x}$Ba_{x}MnO$_3$|R. Mallik,E. S. Reddy,P. L. Paulose,Subham Mazumdar,E. V. Sampathkumaran###
(1317588, 1317588)
 The substitution of larger Ba ions for Ca results in a non-monotonic variation of the curie temperature as the system evolves from acharge ordered insulating state for x<missing VAR>0 to a ferromagnetic metallic state forx<missing VAR>0.5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 0.1, ',', 1],[132.0, 0.3, 'compounds', 3],[154.0, 300, 'K', 3],[203.0, 30, 'K', 3],[238.0, 235, 'K', 4]

Ca
###Transport and magnetic anomalies due to A-site ionic size mismatch in La$_{0.5}$Ca$_{0.5-x}$Ba_{x}MnO$_3$|R. Mallik,E. S. Reddy,P. L. Paulose,Subham Mazumdar,E. V. Sampathkumaran###
(1317594, 1317594)
 The substitution of larger Ba ions for Ca results in a non-monotonic variation of the curie temperature as the system evolves from acharge ordered insulating state for x<missing VAR>0 to a ferromagnetic metallic state forx<missing VAR>0.5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 0.1, ',', 1],[126.0, 0.3, 'compounds', 3],[148.0, 300, 'K', 3],[197.0, 30, 'K', 3],[232.0, 235, 'K', 4]

K
###Transport and magnetic anomalies due to A-site ionic size mismatch in La$_{0.5}$Ca$_{0.5-x}$Ba_{x}MnO$_3$|R. Mallik,E. S. Reddy,P. L. Paulose,Subham Mazumdar,E. V. Sampathkumaran###
(1317710, 1317710)
 insulating behaviour with thermal hysteresis in ac chi aroundthe curie tem- perature (120K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 0.1, ',', 1],[10.0, 0.3, 'compounds', 1],[32.0, 300, 'K', 1],[81.0, 30, 'K', 1],[116.0, 235, 'K', 2]

K
###Transport and magnetic anomalies due to A-site ionic size mismatch in La$_{0.5}$Ca$_{0.5-x}$Ba_{x}MnO$_3$|R. Mallik,E. S. Reddy,P. L. Paulose,Subham Mazumdar,E. V. Sampathkumaran###
(1317763, 1317763)
 The x<missing VAR>0.2 and 0.3 compounds exhibitsemiconducting like behavior as the temperature is lowered below 300K, with abroad peak in rho around 80-100K These compositions exhibit a weak increase inrho as the temperature lowered below 30K, indicative of electron localizationeffects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 0.1, ',', 2],[43.0, 0.3, 'compounds', 0],[21.0, 300, 'K', 0],[28.0, 30, 'K', 0],[63.0, 235, 'K', 1]

Tc
###Transport and magnetic anomalies due to A-site ionic size mismatch in La$_{0.5}$Ca$_{0.5-x}$Ba_{x}MnO$_3$|R. Mallik,E. S. Reddy,P. L. Paulose,Subham Mazumdar,E. V. Sampathkumaran###
(1317888, 1317888)
 These compositions also undergo ferromagnetic transitions below about200 and 235K respectively, though these are non-hysteretic; above all, forthese compositions, MR is large and conveniently measurable over the entiretempera- ture range of measurement below Tc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[219.0, 0.1, ',', 3],[168.0, 0.3, 'compounds', 1],[146.0, 300, 'K', 1],[97.0, 30, 'K', 1],[62.0, 235, 'K', 0]

Mn
###Theory of Colossal Magnetoresistance in Doped Manganites|A. S. Alexandrov,A. M. Bratkovsky###
(1318211, 1318211)
Below the critical temperature of the transition, Tc, the binding of thepolarons into immobile pairs competes with the ferromagnetic exchange betweenpolarons and the localized spins on Mn ions, which tends to align the polaronmoments and, therefore, breaks up those pairs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Theory of Colossal Magnetoresistance in Doped Manganites|A. S. Alexandrov,A. M. Bratkovsky###
(1318466, 1318466)
 This dependence explains the giantisotope effect of the magnetization and resistivity upon substitution of16O by 18O.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Theory of Colossal Magnetoresistance in Doped Manganites|A. S. Alexandrov,A. M. Bratkovsky###
(1318471, 1318471)
 This dependence explains the giantisotope effect of the magnetization and resistivity upon substitution of16O by 18O.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr
###Huge oxygen isotope effect on local lattice fluctuations in La(2-x)Sr(x)CuO(4) superconductor|A. Lanzara,N. L. Saini,A. Bianconi,Guo-meng Zhao,K. Conder,H. Keller,K. A. Muller###
(1318569, 1318569)
Huge oxygen isotope effect on local lattice fluctuations in La(2-x)Sr(x)CuO(4) superconductor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[256.0, 1, 'D', 3],[544.0, 110, 'K', 7],[547.0, 170, 'K', 7]

C
###Huge oxygen isotope effect on local lattice fluctuations in La(2-x)Sr(x)CuO(4) superconductor|A. Lanzara,N. L. Saini,A. Bianconi,Guo-meng Zhao,K. Conder,H. Keller,K. A. Muller###
(1318657, 1318657)
 Recently a growing number of experiments have provided indications of the keyrole of polarons (composite particles formed by a charge strongly coupled witha local lattice deformation) in doped perovskites, hosting colossalmagnetoresistance (CMR) and high Tc superconductivity.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[168.0, 1, 'D', 2],[456.0, 110, 'K', 6],[459.0, 170, 'K', 6]

Tc
###Huge oxygen isotope effect on local lattice fluctuations in La(2-x)Sr(x)CuO(4) superconductor|A. Lanzara,N. L. Saini,A. Bianconi,Guo-meng Zhao,K. Conder,H. Keller,K. A. Muller###
(1318666, 1318666)
 Recently a growing number of experiments have provided indications of the keyrole of polarons (composite particles formed by a charge strongly coupled witha local lattice deformation) in doped perovskites, hosting colossalmagnetoresistance (CMR) and high Tc superconductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[159.0, 1, 'D', 2],[447.0, 110, 'K', 6],[450.0, 170, 'K', 6]

In
###Huge oxygen isotope effect on local lattice fluctuations in La(2-x)Sr(x)CuO(4) superconductor|A. Lanzara,N. L. Saini,A. Bianconi,Guo-meng Zhao,K. Conder,H. Keller,K. A. Muller###
(1318908, 1318908)
 In order to explore the important role of the latterin stripe charge segregation, we have studied isotope effects on the dynamicallattice fluctuations and polaron ordering temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 1, 'D', 2],[205.0, 110, 'K', 2],[208.0, 170, 'K', 2]

Sr
###Huge oxygen isotope effect on local lattice fluctuations in La(2-x)Sr(x)CuO(4) superconductor|A. Lanzara,N. L. Saini,A. Bianconi,Guo-meng Zhao,K. Conder,H. Keller,K. A. Muller###
(1319008, 1319008)
 Here we report acompelling evidence for a huge isotope effect on local lattice fluctuations ofLa(2-x)Sr(x)CuO(4) high Tc superconductor by x<missing VAR>-ray absorption spectroscopy, afast (10(-15) sec) and local probe (5 A).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[183.0, 1, 'D', 3],[105.0, 110, 'K', 1],[108.0, 170, 'K', 1]

Tc
###Huge oxygen isotope effect on local lattice fluctuations in La(2-x)Sr(x)CuO(4) superconductor|A. Lanzara,N. L. Saini,A. Bianconi,Guo-meng Zhao,K. Conder,H. Keller,K. A. Muller###
(1319020, 1319020)
 Here we report acompelling evidence for a huge isotope effect on local lattice fluctuations ofLa(2-x)Sr(x)CuO(4) high Tc superconductor by x<missing VAR>-ray absorption spectroscopy, afast (10(-15) sec) and local probe (5 A).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[195.0, 1, 'D', 3],[93.0, 110, 'K', 1],[96.0, 170, 'K', 1]

O
###Huge oxygen isotope effect on local lattice fluctuations in La(2-x)Sr(x)CuO(4) superconductor|A. Lanzara,N. L. Saini,A. Bianconi,Guo-meng Zhao,K. Conder,H. Keller,K. A. Muller###
(1319068, 1319068)
 Upon replacing 16O with18O, the characteristic temperature T<missing VAR> for polaron ordering inLa(1.94)Sr(0.06)CuO(4) increases from about 110 K to 170 K.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[243.0, 1, 'D', 4],[45.0, 110, 'K', 0],[48.0, 170, 'K', 0]

O
###Huge oxygen isotope effect on local lattice fluctuations in La(2-x)Sr(x)CuO(4) superconductor|A. Lanzara,N. L. Saini,A. Bianconi,Guo-meng Zhao,K. Conder,H. Keller,K. A. Muller###
(1319074, 1319074)
 Upon replacing 16O with18O, the characteristic temperature T<missing VAR> for polaron ordering inLa(1.94)Sr(0.06)CuO(4) increases from about 110 K to 170 K.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[249.0, 1, 'D', 4],[39.0, 110, 'K', 0],[42.0, 170, 'K', 0]

LuNi2B2C
###Hall-effect in LuNi_2B_2C and YNi_2B_2C borocarbides: a comparative study|V. N. Narozhnyi,J. Freudenberger,V. N. Kochetkov,K. A. Nenkov,G. Fuchs,A. Handstein,K. -H. Müller###
(1319133, 1319138)
Hall-effect in LuNi2B2C and YNi2B2C borocarbides a comparative study.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[198.0, 2.1, 'for', 4],[353.0, 40, 'K', 8],[374.0, 90, '%', 8]

YNi2B2C
###Hall-effect in LuNi_2B_2C and YNi_2B_2C borocarbides: a comparative study|V. N. Narozhnyi,J. Freudenberger,V. N. Kochetkov,K. A. Nenkov,G. Fuchs,A. Handstein,K. -H. Müller###
(1319142, 1319147)
Hall-effect in LuNi2B2C and YNi2B2C borocarbides a comparative study.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[189.0, 2.1, 'for', 4],[344.0, 40, 'K', 8],[365.0, 90, '%', 8]

LuNi2B2C
###Hall-effect in LuNi_2B_2C and YNi_2B_2C borocarbides: a comparative study|V. N. Narozhnyi,J. Freudenberger,V. N. Kochetkov,K. A. Nenkov,G. Fuchs,A. Handstein,K. -H. Müller###
(1319166, 1319171)
 The Hall effect in LuNi2B2C and YNi2B2C borocarbides has beeninvestigated in normal and superconducting mixed states.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 2.1, 'for', 3],[320.0, 40, 'K', 7],[341.0, 90, '%', 7]

YNi2B2C
###Hall-effect in LuNi_2B_2C and YNi_2B_2C borocarbides: a comparative study|V. N. Narozhnyi,J. Freudenberger,V. N. Kochetkov,K. A. Nenkov,G. Fuchs,A. Handstein,K. -H. Müller###
(1319175, 1319180)
 The Hall effect in LuNi2B2C and YNi2B2C borocarbides has beeninvestigated in normal and superconducting mixed states.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 2.1, 'for', 3],[311.0, 40, 'K', 7],[332.0, 90, '%', 7]

In
###Hall-effect in LuNi_2B_2C and YNi_2B_2C borocarbides: a comparative study|V. N. Narozhnyi,J. Freudenberger,V. N. Kochetkov,K. A. Nenkov,G. Fuchs,A. Handstein,K. -H. Müller###
(1319273, 1319273)
In the mixed state the behavior of both systems is quite similar.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 2.1, 'for', 1],[218.0, 40, 'K', 5],[239.0, 90, '%', 5]

Lu
###Hall-effect in LuNi_2B_2C and YNi_2B_2C borocarbides: a comparative study|V. N. Narozhnyi,J. Freudenberger,V. N. Kochetkov,K. A. Nenkov,G. Fuchs,A. Handstein,K. -H. Müller###
(1319340, 1319340)
 The scalingrelation rhoxysimrhoxxbeta (rhoxx is the longitudinalresistivity) was found with beta2.0 and 2.1 for annealed Lu- and Y-basedcompounds, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 2.1, 'for', 0],[151.0, 40, 'K', 4],[172.0, 90, '%', 4]

Y
###Hall-effect in LuNi_2B_2C and YNi_2B_2C borocarbides: a comparative study|V. N. Narozhnyi,J. Freudenberger,V. N. Kochetkov,K. A. Nenkov,G. Fuchs,A. Handstein,K. -H. Müller###
(1319345, 1319345)
 The scalingrelation rhoxysimrhoxxbeta (rhoxx is the longitudinalresistivity) was found with beta2.0 and 2.1 for annealed Lu- and Y-basedcompounds, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 2.1, 'for', 0],[146.0, 40, 'K', 4],[167.0, 90, '%', 4]

In
###Hall-effect in LuNi_2B_2C and YNi_2B_2C borocarbides: a comparative study|V. N. Narozhnyi,J. Freudenberger,V. N. Kochetkov,K. A. Nenkov,G. Fuchs,A. Handstein,K. -H. Müller###
(1319416, 1319416)
 In the normal state weaklytemperature dependent Hall coefficients were observed for both compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 2.1, 'for', 3],[75.0, 40, 'K', 1],[96.0, 90, '%', 1]

H
###Hall-effect in LuNi_2B_2C and YNi_2B_2C borocarbides: a comparative study|V. N. Narozhnyi,J. Freudenberger,V. N. Kochetkov,K. A. Nenkov,G. Fuchs,A. Handstein,K. -H. Müller###
(1319466, 1319466)
 Adistinct nonlinearity in the rhoxy dependence on field H was found forLuNi2B2C in the normal state below 40K, accompanied by a largemagnetoresistance (MR) reaching 90% for H160k<missing VAR>Oe at T<missing VAR>20K.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 2.1, 'for', 4],[25.0, 40, 'K', 0],[46.0, 90, '%', 0]

LuNi2B2C
###Hall-effect in LuNi_2B_2C and YNi_2B_2C borocarbides: a comparative study|V. N. Narozhnyi,J. Freudenberger,V. N. Kochetkov,K. A. Nenkov,G. Fuchs,A. Handstein,K. -H. Müller###
(1319475, 1319480)
 Adistinct nonlinearity in the rhoxy dependence on field H was found forLuNi2B2C in the normal state below 40K, accompanied by a largemagnetoresistance (MR) reaching 90% for H160k<missing VAR>Oe at T<missing VAR>20K.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 2.1, 'for', 4],[11.0, 40, 'K', 0],[32.0, 90, '%', 0]

H160
###Hall-effect in LuNi_2B_2C and YNi_2B_2C borocarbides: a comparative study|V. N. Narozhnyi,J. Freudenberger,V. N. Kochetkov,K. A. Nenkov,G. Fuchs,A. Handstein,K. -H. Müller###
(1319517, 1319518)
 Adistinct nonlinearity in the rhoxy dependence on field H was found forLuNi2B2C in the normal state below 40K, accompanied by a largemagnetoresistance (MR) reaching 90% for H160k<missing VAR>Oe at T<missing VAR>20K.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 2.1, 'for', 4],[26.0, 40, 'K', 0],[5.0, 90, '%', 0]

K
###Hall-effect in LuNi_2B_2C and YNi_2B_2C borocarbides: a comparative study|V. N. Narozhnyi,J. Freudenberger,V. N. Kochetkov,K. A. Nenkov,G. Fuchs,A. Handstein,K. -H. Müller###
(1319526, 1319526)
 Adistinct nonlinearity in the rhoxy dependence on field H was found forLuNi2B2C in the normal state below 40K, accompanied by a largemagnetoresistance (MR) reaching 90% for H160k<missing VAR>Oe at T<missing VAR>20K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[190.0, 2.1, 'for', 4],[35.0, 40, 'K', 0],[14.0, 90, '%', 0]

At
###Hall-effect in LuNi_2B_2C and YNi_2B_2C borocarbides: a comparative study|V. N. Narozhnyi,J. Freudenberger,V. N. Kochetkov,K. A. Nenkov,G. Fuchs,A. Handstein,K. -H. Müller###
(1319529, 1319529)
 At the same timefor YNi2B2C only linear rhoxy(H) dependences were observed in the normalstate with an approximately three times lower MR value.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[193.0, 2.1, 'for', 5],[38.0, 40, 'K', 1],[17.0, 90, '%', 1]

YNi2B2C
###Hall-effect in LuNi_2B_2C and YNi_2B_2C borocarbides: a comparative study|V. N. Narozhnyi,J. Freudenberger,V. N. Kochetkov,K. A. Nenkov,G. Fuchs,A. Handstein,K. -H. Müller###
(1319540, 1319545)
 At the same timefor YNi2B2C only linear rhoxy(H) dependences were observed in the normalstate with an approximately three times lower MR value.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[204.0, 2.1, 'for', 5],[49.0, 40, 'K', 1],[28.0, 90, '%', 1]

(H)
###Hall-effect in LuNi_2B_2C and YNi_2B_2C borocarbides: a comparative study|V. N. Narozhnyi,J. Freudenberger,V. N. Kochetkov,K. A. Nenkov,G. Fuchs,A. Handstein,K. -H. Müller###
(1319553, 1319555)
 At the same timefor YNi2B2C only linear rhoxy(H) dependences were observed in the normalstate with an approximately three times lower MR value.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[217.0, 2.1, 'for', 5],[62.0, 40, 'K', 1],[41.0, 90, '%', 1]

Lu
###Hall-effect in LuNi_2B_2C and YNi_2B_2C borocarbides: a comparative study|V. N. Narozhnyi,J. Freudenberger,V. N. Kochetkov,K. A. Nenkov,G. Fuchs,A. Handstein,K. -H. Müller###
(1319613, 1319613)
 This difference in thenormal state behavior of the very similar Lu- and Y-based borocarbides seems tobe connected with the difference in the topology of the Fermi surface of thesecompounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[277.0, 2.1, 'for', 6],[122.0, 40, 'K', 2],[101.0, 90, '%', 2]

Y
###Hall-effect in LuNi_2B_2C and YNi_2B_2C borocarbides: a comparative study|V. N. Narozhnyi,J. Freudenberger,V. N. Kochetkov,K. A. Nenkov,G. Fuchs,A. Handstein,K. -H. Müller###
(1319618, 1319618)
 This difference in thenormal state behavior of the very similar Lu- and Y-based borocarbides seems tobe connected with the difference in the topology of the Fermi surface of thesecompounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[282.0, 2.1, 'for', 6],[127.0, 40, 'K', 2],[106.0, 90, '%', 2]

FeReO6
###Properties of the ferrimagnetic double-perovskite A_{2}FeReO_{6} (A=Ba and Ca)|W. Prellier,V. Smolyaninova,Amlan Biswas,C. Galley,R. L. Greene,K. Ramesha,J. Gopalakrishnan###
(1319683, 1319686)
Properties of the ferrimagnetic double-perovskite A2FeReO6 (ABa and Ca).
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 5, 'K', 3],[199.0, 385, 'K', 4],[216.0, 5, 'K', 4],[219.0, 385, 'K', 4],[263.0, 385, 'K', 5],[340.0, 5, 'K', 7],[369.0, 5, 'T', 7]

Ba
###Properties of the ferrimagnetic double-perovskite A_{2}FeReO_{6} (A=Ba and Ca)|W. Prellier,V. Smolyaninova,Amlan Biswas,C. Galley,R. L. Greene,K. Ramesha,J. Gopalakrishnan###
(1319690, 1319690)
Properties of the ferrimagnetic double-perovskite A2FeReO6 (ABa and Ca).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 5, 'K', 3],[195.0, 385, 'K', 4],[212.0, 5, 'K', 4],[215.0, 385, 'K', 4],[259.0, 385, 'K', 5],[336.0, 5, 'K', 7],[365.0, 5, 'T', 7]

Ca
###Properties of the ferrimagnetic double-perovskite A_{2}FeReO_{6} (A=Ba and Ca)|W. Prellier,V. Smolyaninova,Amlan Biswas,C. Galley,R. L. Greene,K. Ramesha,J. Gopalakrishnan###
(1319694, 1319694)
Properties of the ferrimagnetic double-perovskite A2FeReO6 (ABa and Ca).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[159.0, 5, 'K', 3],[191.0, 385, 'K', 4],[208.0, 5, 'K', 4],[211.0, 385, 'K', 4],[255.0, 385, 'K', 5],[332.0, 5, 'K', 7],[361.0, 5, 'T', 7]

FeReO6
###Properties of the ferrimagnetic double-perovskite A_{2}FeReO_{6} (A=Ba and Ca)|W. Prellier,V. Smolyaninova,Amlan Biswas,C. Galley,R. L. Greene,K. Ramesha,J. Gopalakrishnan###
(1319704, 1319707)
 Ceramics of A2FeReO6 double-perovskite have been prepared and studiedfor ABa and Ca.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 5, 'K', 2],[178.0, 385, 'K', 3],[195.0, 5, 'K', 3],[198.0, 385, 'K', 3],[242.0, 385, 'K', 4],[319.0, 5, 'K', 6],[348.0, 5, 'T', 6]

Ba
###Properties of the ferrimagnetic double-perovskite A_{2}FeReO_{6} (A=Ba and Ca)|W. Prellier,V. Smolyaninova,Amlan Biswas,C. Galley,R. L. Greene,K. Ramesha,J. Gopalakrishnan###
(1319727, 1319727)
 Ceramics of A2FeReO6 double-perovskite have been prepared and studiedfor ABa and Ca.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 5, 'K', 2],[158.0, 385, 'K', 3],[175.0, 5, 'K', 3],[178.0, 385, 'K', 3],[222.0, 385, 'K', 4],[299.0, 5, 'K', 6],[328.0, 5, 'T', 6]

Ca
###Properties of the ferrimagnetic double-perovskite A_{2}FeReO_{6} (A=Ba and Ca)|W. Prellier,V. Smolyaninova,Amlan Biswas,C. Galley,R. L. Greene,K. Ramesha,J. Gopalakrishnan###
(1319731, 1319731)
 Ceramics of A2FeReO6 double-perovskite have been prepared and studiedfor ABa and Ca.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 5, 'K', 2],[154.0, 385, 'K', 3],[171.0, 5, 'K', 3],[174.0, 385, 'K', 3],[218.0, 385, 'K', 4],[295.0, 5, 'K', 6],[324.0, 5, 'T', 6]

Ba2FeReO6
###Properties of the ferrimagnetic double-perovskite A_{2}FeReO_{6} (A=Ba and Ca)|W. Prellier,V. Smolyaninova,Amlan Biswas,C. Galley,R. L. Greene,K. Ramesha,J. Gopalakrishnan###
(1319734, 1319739)
 Ba2FeReO6 has a cubic structure (Fm3m) with aapprox8.0854(1) AA whereas Ca2FeReO6 has a distorted monoclinic symmetry withaapprox 5.396(1) AA, b<missing VAR>approx 5.522(1) AA, c<missing VAR>approx 7.688(2) AA andbeta 90.4circ (P21/n).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 5, 'K', 1],[146.0, 385, 'K', 2],[163.0, 5, 'K', 2],[166.0, 385, 'K', 2],[210.0, 385, 'K', 3],[287.0, 5, 'K', 5],[316.0, 5, 'T', 5]

Fm3
###Properties of the ferrimagnetic double-perovskite A_{2}FeReO_{6} (A=Ba and Ca)|W. Prellier,V. Smolyaninova,Amlan Biswas,C. Galley,R. L. Greene,K. Ramesha,J. Gopalakrishnan###
(1319750, 1319751)
 Ba2FeReO6 has a cubic structure (Fm3m) with aapprox8.0854(1) AA whereas Ca2FeReO6 has a distorted monoclinic symmetry withaapprox 5.396(1) AA, b<missing VAR>approx 5.522(1) AA, c<missing VAR>approx 7.688(2) AA andbeta 90.4circ (P21/n).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0
[102.0, 5, 'K', 1],[134.0, 385, 'K', 2],[151.0, 5, 'K', 2],[154.0, 385, 'K', 2],[198.0, 385, 'K', 3],[275.0, 5, 'K', 5],[304.0, 5, 'T', 5]

Ca2FeReO6
###Properties of the ferrimagnetic double-perovskite A_{2}FeReO_{6} (A=Ba and Ca)|W. Prellier,V. Smolyaninova,Amlan Biswas,C. Galley,R. L. Greene,K. Ramesha,J. Gopalakrishnan###
(1319771, 1319776)
 Ba2FeReO6 has a cubic structure (Fm3m) with aapprox8.0854(1) AA whereas Ca2FeReO6 has a distorted monoclinic symmetry withaapprox 5.396(1) AA, b<missing VAR>approx 5.522(1) AA, c<missing VAR>approx 7.688(2) AA andbeta 90.4circ (P21/n).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 5, 'K', 1],[109.0, 385, 'K', 2],[126.0, 5, 'K', 2],[129.0, 385, 'K', 2],[173.0, 385, 'K', 3],[250.0, 5, 'K', 5],[279.0, 5, 'T', 5]

P21
###Properties of the ferrimagnetic double-perovskite A_{2}FeReO_{6} (A=Ba and Ca)|W. Prellier,V. Smolyaninova,Amlan Biswas,C. Galley,R. L. Greene,K. Ramesha,J. Gopalakrishnan###
(1319835, 1319836)
 Ba2FeReO6 has a cubic structure (Fm3m) with aapprox8.0854(1) AA whereas Ca2FeReO6 has a distorted monoclinic symmetry withaapprox 5.396(1) AA, b<missing VAR>approx 5.522(1) AA, c<missing VAR>approx 7.688(2) AA andbeta 90.4circ (P21/n).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 5, 'K', 1],[49.0, 385, 'K', 2],[66.0, 5, 'K', 2],[69.0, 385, 'K', 2],[113.0, 385, 'K', 3],[190.0, 5, 'K', 5],[219.0, 5, 'T', 5]

K
###Properties of the ferrimagnetic double-perovskite A_{2}FeReO_{6} (A=Ba and Ca)|W. Prellier,V. Smolyaninova,Amlan Biswas,C. Galley,R. L. Greene,K. Ramesha,J. Gopalakrishnan###
(1319860, 1319860)
 The barium compound is metallic from 5 K to 385K, i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 5, 'K', 0],[25.0, 385, 'K', 1],[42.0, 5, 'K', 1],[45.0, 385, 'K', 1],[89.0, 385, 'K', 2],[166.0, 5, 'K', 4],[195.0, 5, 'T', 4]

K
###Properties of the ferrimagnetic double-perovskite A_{2}FeReO_{6} (A=Ba and Ca)|W. Prellier,V. Smolyaninova,Amlan Biswas,C. Galley,R. L. Greene,K. Ramesha,J. Gopalakrishnan###
(1319934, 1319934)
 Magnetizationmeasurements show a ferrimagnetic behavior for both materials, with Tc315 Kfor Ba2FeReO6 and above 385 K for Ca2FeReO6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 5, 'K', 2],[49.0, 385, 'K', 1],[32.0, 5, 'K', 1],[29.0, 385, 'K', 1],[15.0, 385, 'K', 0],[92.0, 5, 'K', 2],[121.0, 5, 'T', 2]

Ba2FeReO6
###Properties of the ferrimagnetic double-perovskite A_{2}FeReO_{6} (A=Ba and Ca)|W. Prellier,V. Smolyaninova,Amlan Biswas,C. Galley,R. L. Greene,K. Ramesha,J. Gopalakrishnan###
(1319939, 1319944)
 Magnetizationmeasurements show a ferrimagnetic behavior for both materials, with Tc315 Kfor Ba2FeReO6 and above 385 K for Ca2FeReO6.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 5, 'K', 2],[54.0, 385, 'K', 1],[37.0, 5, 'K', 1],[34.0, 385, 'K', 1],[5.0, 385, 'K', 0],[82.0, 5, 'K', 2],[111.0, 5, 'T', 2]

Ca2FeReO6
###Properties of the ferrimagnetic double-perovskite A_{2}FeReO_{6} (A=Ba and Ca)|W. Prellier,V. Smolyaninova,Amlan Biswas,C. Galley,R. L. Greene,K. Ramesha,J. Gopalakrishnan###
(1319953, 1319958)
 Magnetizationmeasurements show a ferrimagnetic behavior for both materials, with Tc315 Kfor Ba2FeReO6 and above 385 K for Ca2FeReO6.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 5, 'K', 2],[68.0, 385, 'K', 1],[51.0, 5, 'K', 1],[48.0, 385, 'K', 1],[4.0, 385, 'K', 0],[68.0, 5, 'K', 2],[97.0, 5, 'T', 2]

N
###Properties of the ferrimagnetic double-perovskite A_{2}FeReO_{6} (A=Ba and Ca)|W. Prellier,V. Smolyaninova,Amlan Biswas,C. Galley,R. L. Greene,K. Ramesha,J. Gopalakrishnan###
(1320000, 1320000)
 A specific heatmeasurement on the barium compound gave an electron density of states at theFermi level, N(E<missing VAR>F) equal to 6.1times 1024 e<missing VAR>V-1mole-1.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 5, 'K', 3],[115.0, 385, 'K', 2],[98.0, 5, 'K', 2],[95.0, 385, 'K', 2],[51.0, 385, 'K', 1],[26.0, 5, 'K', 1],[55.0, 5, 'T', 1]

F
###Properties of the ferrimagnetic double-perovskite A_{2}FeReO_{6} (A=Ba and Ca)|W. Prellier,V. Smolyaninova,Amlan Biswas,C. Galley,R. L. Greene,K. Ramesha,J. Gopalakrishnan###
(1320003, 1320003)
 A specific heatmeasurement on the barium compound gave an electron density of states at theFermi level, N(E<missing VAR>F) equal to 6.1times 1024 e<missing VAR>V-1mole-1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 5, 'K', 3],[118.0, 385, 'K', 2],[101.0, 5, 'K', 2],[98.0, 385, 'K', 2],[54.0, 385, 'K', 1],[23.0, 5, 'K', 1],[52.0, 5, 'T', 1]

V
###Properties of the ferrimagnetic double-perovskite A_{2}FeReO_{6} (A=Ba and Ca)|W. Prellier,V. Smolyaninova,Amlan Biswas,C. Galley,R. L. Greene,K. Ramesha,J. Gopalakrishnan###
(1320017, 1320017)
 A specific heatmeasurement on the barium compound gave an electron density of states at theFermi level, N(E<missing VAR>F) equal to 6.1times 1024 e<missing VAR>V-1mole-1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 5, 'K', 3],[132.0, 385, 'K', 2],[115.0, 5, 'K', 2],[112.0, 385, 'K', 2],[68.0, 385, 'K', 1],[9.0, 5, 'K', 1],[38.0, 5, 'T', 1]

At
###Properties of the ferrimagnetic double-perovskite A_{2}FeReO_{6} (A=Ba and Ca)|W. Prellier,V. Smolyaninova,Amlan Biswas,C. Galley,R. L. Greene,K. Ramesha,J. Gopalakrishnan###
(1320025, 1320025)
 At 5 K, weobserved a negative magnetoresistance of 10 % in a magnetic field of 5 T, butonly for Ba2FeReO6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[172.0, 5, 'K', 4],[140.0, 385, 'K', 3],[123.0, 5, 'K', 3],[120.0, 385, 'K', 3],[76.0, 385, 'K', 2],[1.0, 5, 'K', 0],[30.0, 5, 'T', 0]

Ba2FeReO6
###Properties of the ferrimagnetic double-perovskite A_{2}FeReO_{6} (A=Ba and Ca)|W. Prellier,V. Smolyaninova,Amlan Biswas,C. Galley,R. L. Greene,K. Ramesha,J. Gopalakrishnan###
(1320065, 1320070)
 At 5 K, weobserved a negative magnetoresistance of 10 % in a magnetic field of 5 T, butonly for Ba2FeReO6.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[212.0, 5, 'K', 4],[180.0, 385, 'K', 3],[163.0, 5, 'K', 3],[160.0, 385, 'K', 3],[116.0, 385, 'K', 2],[39.0, 5, 'K', 0],[10.0, 5, 'T', 0]

Fe
###Properties of the ferrimagnetic double-perovskite A_{2}FeReO_{6} (A=Ba and Ca)|W. Prellier,V. Smolyaninova,Amlan Biswas,C. Galley,R. L. Greene,K. Ramesha,J. Gopalakrishnan###
(1320103, 1320103)
 Electrical, thermal and magnetic properties arediscussed and compared to the analogous compounds Sr2Fe(Mo,Re)O6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[250.0, 5, 'K', 5],[218.0, 385, 'K', 4],[201.0, 5, 'K', 4],[198.0, 385, 'K', 4],[154.0, 385, 'K', 3],[77.0, 5, 'K', 1],[48.0, 5, 'T', 1]

Mo
###Properties of the ferrimagnetic double-perovskite A_{2}FeReO_{6} (A=Ba and Ca)|W. Prellier,V. Smolyaninova,Amlan Biswas,C. Galley,R. L. Greene,K. Ramesha,J. Gopalakrishnan###
(1320105, 1320105)
 Electrical, thermal and magnetic properties arediscussed and compared to the analogous compounds Sr2Fe(Mo,Re)O6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[252.0, 5, 'K', 5],[220.0, 385, 'K', 4],[203.0, 5, 'K', 4],[200.0, 385, 'K', 4],[156.0, 385, 'K', 3],[79.0, 5, 'K', 1],[50.0, 5, 'T', 1]

Re
###Properties of the ferrimagnetic double-perovskite A_{2}FeReO_{6} (A=Ba and Ca)|W. Prellier,V. Smolyaninova,Amlan Biswas,C. Galley,R. L. Greene,K. Ramesha,J. Gopalakrishnan###
(1320107, 1320107)
 Electrical, thermal and magnetic properties arediscussed and compared to the analogous compounds Sr2Fe(Mo,Re)O6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[254.0, 5, 'K', 5],[222.0, 385, 'K', 4],[205.0, 5, 'K', 4],[202.0, 385, 'K', 4],[158.0, 385, 'K', 3],[81.0, 5, 'K', 1],[52.0, 5, 'T', 1]

O6
###Properties of the ferrimagnetic double-perovskite A_{2}FeReO_{6} (A=Ba and Ca)|W. Prellier,V. Smolyaninova,Amlan Biswas,C. Galley,R. L. Greene,K. Ramesha,J. Gopalakrishnan###
(1320109, 1320110)
 Electrical, thermal and magnetic properties arediscussed and compared to the analogous compounds Sr2Fe(Mo,Re)O6.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[256.0, 5, 'K', 5],[224.0, 385, 'K', 4],[207.0, 5, 'K', 4],[204.0, 385, 'K', 4],[160.0, 385, 'K', 3],[83.0, 5, 'K', 1],[54.0, 5, 'T', 1]

La0.7Ce0.3MnO3
###Transport and Magnetic properties of laser ablated La0.7Ce0.3MnO3 films on LaAlO3: Effect of oxygen pressure, sample thickness and co-doping with Ca|P. Raychaudhuri,S. Mukherjee,A. K. Nigam,J. John,U. D. Vaisnav,R. Pinto###
(1320135, 1320141)
Transport and Magnetic properties of laser ablated La0.7Ce0.3MnO3 films on LaAlO3 Effect of oxygen pressure, sample thickness and co-doping with Ca.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[429.0, 50, '%', 9]

LaAlO3
###Transport and Magnetic properties of laser ablated La0.7Ce0.3MnO3 films on LaAlO3: Effect of oxygen pressure, sample thickness and co-doping with Ca|P. Raychaudhuri,S. Mukherjee,A. K. Nigam,J. John,U. D. Vaisnav,R. Pinto###
(1320147, 1320150)
Transport and Magnetic properties of laser ablated La0.7Ce0.3MnO3 films on LaAlO3 Effect of oxygen pressure, sample thickness and co-doping with Ca.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[420.0, 50, '%', 9]

Ca
###Transport and Magnetic properties of laser ablated La0.7Ce0.3MnO3 films on LaAlO3: Effect of oxygen pressure, sample thickness and co-doping with Ca|P. Raychaudhuri,S. Mukherjee,A. K. Nigam,J. John,U. D. Vaisnav,R. Pinto###
(1320173, 1320173)
Transport and Magnetic properties of laser ablated La0.7Ce0.3MnO3 films on LaAlO3 Effect of oxygen pressure, sample thickness and co-doping with Ca.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[397.0, 50, '%', 9]

La0.7Ce0.3MnO3
###Transport and Magnetic properties of laser ablated La0.7Ce0.3MnO3 films on LaAlO3: Effect of oxygen pressure, sample thickness and co-doping with Ca|P. Raychaudhuri,S. Mukherjee,A. K. Nigam,J. John,U. D. Vaisnav,R. Pinto###
(1320176, 1320182)
 La0.7Ce0.3MnO3 is a relatively new addition in the family of colossalmagnetoresistive manganites where the cerium ion is believed to be in the Ce4state.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[388.0, 50, '%', 8]

Ce4
###Transport and Magnetic properties of laser ablated La0.7Ce0.3MnO3 films on LaAlO3: Effect of oxygen pressure, sample thickness and co-doping with Ca|P. Raychaudhuri,S. Mukherjee,A. K. Nigam,J. John,U. D. Vaisnav,R. Pinto###
(1320229, 1320230)
 La0.7Ce0.3MnO3 is a relatively new addition in the family of colossalmagnetoresistive manganites where the cerium ion is believed to be in the Ce4state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[340.0, 50, '%', 8]

In
###Transport and Magnetic properties of laser ablated La0.7Ce0.3MnO3 films on LaAlO3: Effect of oxygen pressure, sample thickness and co-doping with Ca|P. Raychaudhuri,S. Mukherjee,A. K. Nigam,J. John,U. D. Vaisnav,R. Pinto###
(1320236, 1320236)
 In this paper we report an extensive study the magnetotransportproperties of laser ablated La0.7Ce0.3MnO3 films on LaAlO3 with variation inambient oxygen pressure during growth and film thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[334.0, 50, '%', 7]

La0.7Ce0.3MnO3
###Transport and Magnetic properties of laser ablated La0.7Ce0.3MnO3 films on LaAlO3: Effect of oxygen pressure, sample thickness and co-doping with Ca|P. Raychaudhuri,S. Mukherjee,A. K. Nigam,J. John,U. D. Vaisnav,R. Pinto###
(1320265, 1320271)
 In this paper we report an extensive study the magnetotransportproperties of laser ablated La0.7Ce0.3MnO3 films on LaAlO3 with variation inambient oxygen pressure during growth and film thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[299.0, 50, '%', 7]

LaAlO3
###Transport and Magnetic properties of laser ablated La0.7Ce0.3MnO3 films on LaAlO3: Effect of oxygen pressure, sample thickness and co-doping with Ca|P. Raychaudhuri,S. Mukherjee,A. K. Nigam,J. John,U. D. Vaisnav,R. Pinto###
(1320277, 1320280)
 In this paper we report an extensive study the magnetotransportproperties of laser ablated La0.7Ce0.3MnO3 films on LaAlO3 with variation inambient oxygen pressure during growth and film thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[290.0, 50, '%', 7]

La0.7Ca
###Transport and Magnetic properties of laser ablated La0.7Ce0.3MnO3 films on LaAlO3: Effect of oxygen pressure, sample thickness and co-doping with Ca|P. Raychaudhuri,S. Mukherjee,A. K. Nigam,J. John,U. D. Vaisnav,R. Pinto###
(1320447, 1320449)
 This is in direct contrast with the oxygen pressuredependence of La0.7Ca-0.3MnO-3 films suggesting the electron doped nature ofthe La0.7Ce0.3MnO3 system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5882352941176471,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4117647058823529,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 50, '%', 3]

MnO
###Transport and Magnetic properties of laser ablated La0.7Ce0.3MnO3 films on LaAlO3: Effect of oxygen pressure, sample thickness and co-doping with Ca|P. Raychaudhuri,S. Mukherjee,A. K. Nigam,J. John,U. D. Vaisnav,R. Pinto###
(1320452, 1320453)
 This is in direct contrast with the oxygen pressuredependence of La0.7Ca-0.3MnO-3 films suggesting the electron doped nature ofthe La0.7Ce0.3MnO3 system.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 50, '%', 3]

La0.7Ce0.3MnO3
###Transport and Magnetic properties of laser ablated La0.7Ce0.3MnO3 films on LaAlO3: Effect of oxygen pressure, sample thickness and co-doping with Ca|P. Raychaudhuri,S. Mukherjee,A. K. Nigam,J. John,U. D. Vaisnav,R. Pinto###
(1320474, 1320480)
 This is in direct contrast with the oxygen pressuredependence of La0.7Ca-0.3MnO-3 films suggesting the electron doped nature ofthe La0.7Ce0.3MnO3 system.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 50, '%', 3]

Ca
###Transport and Magnetic properties of laser ablated La0.7Ce0.3MnO3 films on LaAlO3: Effect of oxygen pressure, sample thickness and co-doping with Ca|P. Raychaudhuri,S. Mukherjee,A. K. Nigam,J. John,U. D. Vaisnav,R. Pinto###
(1320573, 1320573)
 Whenthe system is co-doped with 50% Ca at the Ce site the system(La0.7Ca0.15Ce0.15MnO3) is driven into a insulating state suggesting that theelectrons generated by Ce4 is compensated by the holes generated by Ca2valence thus making the average valence at the rare-earth site 3 as in theparent material LaMnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 50, '%', 0]

Ce
###Transport and Magnetic properties of laser ablated La0.7Ce0.3MnO3 films on LaAlO3: Effect of oxygen pressure, sample thickness and co-doping with Ca|P. Raychaudhuri,S. Mukherjee,A. K. Nigam,J. John,U. D. Vaisnav,R. Pinto###
(1320579, 1320579)
 Whenthe system is co-doped with 50% Ca at the Ce site the system(La0.7Ca0.15Ce0.15MnO3) is driven into a insulating state suggesting that theelectrons generated by Ce4 is compensated by the holes generated by Ca2valence thus making the average valence at the rare-earth site 3 as in theparent material LaMnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 50, '%', 0]

(La0.7Ca0.15Ce0.15MnO3)
###Transport and Magnetic properties of laser ablated La0.7Ce0.3MnO3 films on LaAlO3: Effect of oxygen pressure, sample thickness and co-doping with Ca|P. Raychaudhuri,S. Mukherjee,A. K. Nigam,J. John,U. D. Vaisnav,R. Pinto###
(1320588, 1320598)
 Whenthe system is co-doped with 50% Ca at the Ce site the system(La0.7Ca0.15Ce0.15MnO3) is driven into a insulating state suggesting that theelectrons generated by Ce4 is compensated by the holes generated by Ca2valence thus making the average valence at the rare-earth site 3 as in theparent material LaMnO3.
Featurization successful!
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.03,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0.03,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 50, '%', 0]

Ce4
###Transport and Magnetic properties of laser ablated La0.7Ce0.3MnO3 films on LaAlO3: Effect of oxygen pressure, sample thickness and co-doping with Ca|P. Raychaudhuri,S. Mukherjee,A. K. Nigam,J. John,U. D. Vaisnav,R. Pinto###
(1320625, 1320626)
 Whenthe system is co-doped with 50% Ca at the Ce site the system(La0.7Ca0.15Ce0.15MnO3) is driven into a insulating state suggesting that theelectrons generated by Ce4 is compensated by the holes generated by Ca2valence thus making the average valence at the rare-earth site 3 as in theparent material LaMnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 50, '%', 0]

Ca2
###Transport and Magnetic properties of laser ablated La0.7Ce0.3MnO3 films on LaAlO3: Effect of oxygen pressure, sample thickness and co-doping with Ca|P. Raychaudhuri,S. Mukherjee,A. K. Nigam,J. John,U. D. Vaisnav,R. Pinto###
(1320642, 1320643)
 Whenthe system is co-doped with 50% Ca at the Ce site the system(La0.7Ca0.15Ce0.15MnO3) is driven into a insulating state suggesting that theelectrons generated by Ce4 is compensated by the holes generated by Ca2valence thus making the average valence at the rare-earth site 3 as in theparent material LaMnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 50, '%', 0]

LaMnO3
###Transport and Magnetic properties of laser ablated La0.7Ce0.3MnO3 films on LaAlO3: Effect of oxygen pressure, sample thickness and co-doping with Ca|P. Raychaudhuri,S. Mukherjee,A. K. Nigam,J. John,U. D. Vaisnav,R. Pinto###
(1320681, 1320684)
 Whenthe system is co-doped with 50% Ca at the Ce site the system(La0.7Ca0.15Ce0.15MnO3) is driven into a insulating state suggesting that theelectrons generated by Ce4 is compensated by the holes generated by Ca2valence thus making the average valence at the rare-earth site 3 as in theparent material LaMnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 50, '%', 0]

I
###Interference and Interaction in Multiwall Carbon Nanotubes|C. Schonenberger,A. Bachtold,C. Strunk,J. -P. Salvetat,L. Forro###
(1320729, 1320729)
 We report equilibrium electric resistance R<missing VAR> and tunneling spectroscopy d<missing VAR>I/d<missing VAR>Vmeasurements obtained on single multiwall nanotubes contacted by four metallicAu fingers from above.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[299.0, 10, 'meV', 8]

V
###Interference and Interaction in Multiwall Carbon Nanotubes|C. Schonenberger,A. Bachtold,C. Strunk,J. -P. Salvetat,L. Forro###
(1320732, 1320732)
 We report equilibrium electric resistance R<missing VAR> and tunneling spectroscopy d<missing VAR>I/d<missing VAR>Vmeasurements obtained on single multiwall nanotubes contacted by four metallicAu fingers from above.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[296.0, 10, 'meV', 8]

Au
###Interference and Interaction in Multiwall Carbon Nanotubes|C. Schonenberger,A. Bachtold,C. Strunk,J. -P. Salvetat,L. Forro###
(1320756, 1320756)
 We report equilibrium electric resistance R<missing VAR> and tunneling spectroscopy d<missing VAR>I/d<missing VAR>Vmeasurements obtained on single multiwall nanotubes contacted by four metallicAu fingers from above.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[272.0, 10, 'meV', 8]

At
###Interference and Interaction in Multiwall Carbon Nanotubes|C. Schonenberger,A. Bachtold,C. Strunk,J. -P. Salvetat,L. Forro###
(1320765, 1320765)
 At low temperature quantum interference phenomenadominate the magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[263.0, 10, 'meV', 7]

I
###Interference and Interaction in Multiwall Carbon Nanotubes|C. Schonenberger,A. Bachtold,C. Strunk,J. -P. Salvetat,L. Forro###
(1320853, 1320853)
 This result is supported by a d<missing VAR>I/d<missing VAR>Vspectrum which is in good agreement with the density-of-states (D<missing VAR>OS) due to theone-dimensional subbands expected for a perfect single-wall tube.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 10, 'meV', 4]

V
###Interference and Interaction in Multiwall Carbon Nanotubes|C. Schonenberger,A. Bachtold,C. Strunk,J. -P. Salvetat,L. Forro###
(1320856, 1320856)
 This result is supported by a d<missing VAR>I/d<missing VAR>Vspectrum which is in good agreement with the density-of-states (D<missing VAR>OS) due to theone-dimensional subbands expected for a perfect single-wall tube.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[172.0, 10, 'meV', 4]

S
###Interference and Interaction in Multiwall Carbon Nanotubes|C. Schonenberger,A. Bachtold,C. Strunk,J. -P. Salvetat,L. Forro###
(1320884, 1320884)
 This result is supported by a d<missing VAR>I/d<missing VAR>Vspectrum which is in good agreement with the density-of-states (D<missing VAR>OS) due to theone-dimensional subbands expected for a perfect single-wall tube.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 10, 'meV', 4]

As
###Interference and Interaction in Multiwall Carbon Nanotubes|C. Schonenberger,A. Bachtold,C. Strunk,J. -P. Salvetat,L. Forro###
(1320915, 1320915)
 As a functionof temperature T<missing VAR> the resistance increases on decreasing T<missing VAR> and saturates atapprox.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 10, 'meV', 3]

K
###Interference and Interaction in Multiwall Carbon Nanotubes|C. Schonenberger,A. Bachtold,C. Strunk,J. -P. Salvetat,L. Forro###
(1320954, 1320954)
 1-10 K for all measured nanotubes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 10, 'meV', 2]

OS
###Interference and Interaction in Multiwall Carbon Nanotubes|C. Schonenberger,A. Bachtold,C. Strunk,J. -P. Salvetat,L. Forro###
(1320986, 1320987)
 R(T) cannot be related to theenergy-dependent D<missing VAR>OS of graphene but is mainly caused by interaction andinterference effects.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 10, 'meV', 1]

I
###Interference and Interaction in Multiwall Carbon Nanotubes|C. Schonenberger,A. Bachtold,C. Strunk,J. -P. Salvetat,L. Forro###
(1321043, 1321043)
 On a relatively small voltage scale of order 10 meV, apseudogap is observed in d<missing VAR>I/d<missing VAR>V which agrees with Luttinger-Liquid theories fornanotubes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 10, 'meV', 0]

V
###Interference and Interaction in Multiwall Carbon Nanotubes|C. Schonenberger,A. Bachtold,C. Strunk,J. -P. Salvetat,L. Forro###
(1321046, 1321046)
 On a relatively small voltage scale of order 10 meV, apseudogap is observed in d<missing VAR>I/d<missing VAR>V which agrees with Luttinger-Liquid theories fornanotubes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 10, 'meV', 0]

La7
###Influence of the cooperative Jahn-Teller effect on the transport- and magnetic properties of La_{7/8}Sr_{1/8}MnO_3 single crystals|P. Wagner,I. Gordon,S. Mangin,V. V. Moshchalkov,Y. Bruynseraede,L. Pinsard,A. Revcolevschi###
(1321183, 1321184)
Influence of the cooperative Jahn-Teller effect on the transport- and magnetic properties of La7/8Sr1/8MnO3 single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[159.0, 269, 'K', 3],[326.0, 12, 'T', 6],[342.0, 50, 'T', 6],[374.0, 20, 'T', 7]

Sr1
###Influence of the cooperative Jahn-Teller effect on the transport- and magnetic properties of La_{7/8}Sr_{1/8}MnO_3 single crystals|P. Wagner,I. Gordon,S. Mangin,V. V. Moshchalkov,Y. Bruynseraede,L. Pinsard,A. Revcolevschi###
(1321187, 1321188)
Influence of the cooperative Jahn-Teller effect on the transport- and magnetic properties of La7/8Sr1/8MnO3 single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 269, 'K', 3],[322.0, 12, 'T', 6],[338.0, 50, 'T', 6],[370.0, 20, 'T', 7]

MnO3
###Influence of the cooperative Jahn-Teller effect on the transport- and magnetic properties of La_{7/8}Sr_{1/8}MnO_3 single crystals|P. Wagner,I. Gordon,S. Mangin,V. V. Moshchalkov,Y. Bruynseraede,L. Pinsard,A. Revcolevschi###
(1321191, 1321193)
Influence of the cooperative Jahn-Teller effect on the transport- and magnetic properties of La7/8Sr1/8MnO3 single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 269, 'K', 3],[317.0, 12, 'T', 6],[333.0, 50, 'T', 6],[365.0, 20, 'T', 7]

La7
###Influence of the cooperative Jahn-Teller effect on the transport- and magnetic properties of La_{7/8}Sr_{1/8}MnO_3 single crystals|P. Wagner,I. Gordon,S. Mangin,V. V. Moshchalkov,Y. Bruynseraede,L. Pinsard,A. Revcolevschi###
(1321210, 1321211)
 The low-doped magnetic perovskite La7/8Sr1/8MnO3 undergoes within theparamagnetic-semiconducting phase a first-order structural transition due toantiferrodistorsive ordering of Jahn-Teller deformed MnO6 octahedra.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 269, 'K', 2],[299.0, 12, 'T', 5],[315.0, 50, 'T', 5],[347.0, 20, 'T', 6]

Sr1
###Influence of the cooperative Jahn-Teller effect on the transport- and magnetic properties of La_{7/8}Sr_{1/8}MnO_3 single crystals|P. Wagner,I. Gordon,S. Mangin,V. V. Moshchalkov,Y. Bruynseraede,L. Pinsard,A. Revcolevschi###
(1321214, 1321215)
 The low-doped magnetic perovskite La7/8Sr1/8MnO3 undergoes within theparamagnetic-semiconducting phase a first-order structural transition due toantiferrodistorsive ordering of Jahn-Teller deformed MnO6 octahedra.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 269, 'K', 2],[295.0, 12, 'T', 5],[311.0, 50, 'T', 5],[343.0, 20, 'T', 6]

MnO3
###Influence of the cooperative Jahn-Teller effect on the transport- and magnetic properties of La_{7/8}Sr_{1/8}MnO_3 single crystals|P. Wagner,I. Gordon,S. Mangin,V. V. Moshchalkov,Y. Bruynseraede,L. Pinsard,A. Revcolevschi###
(1321218, 1321220)
 The low-doped magnetic perovskite La7/8Sr1/8MnO3 undergoes within theparamagnetic-semiconducting phase a first-order structural transition due toantiferrodistorsive ordering of Jahn-Teller deformed MnO6 octahedra.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 269, 'K', 2],[290.0, 12, 'T', 5],[306.0, 50, 'T', 5],[338.0, 20, 'T', 6]

MnO6
###Influence of the cooperative Jahn-Teller effect on the transport- and magnetic properties of La_{7/8}Sr_{1/8}MnO_3 single crystals|P. Wagner,I. Gordon,S. Mangin,V. V. Moshchalkov,Y. Bruynseraede,L. Pinsard,A. Revcolevschi###
(1321262, 1321264)
 The low-doped magnetic perovskite La7/8Sr1/8MnO3 undergoes within theparamagnetic-semiconducting phase a first-order structural transition due toantiferrodistorsive ordering of Jahn-Teller deformed MnO6 octahedra.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 269, 'K', 2],[246.0, 12, 'T', 5],[262.0, 50, 'T', 5],[294.0, 20, 'T', 6]

C
###Influence of the cooperative Jahn-Teller effect on the transport- and magnetic properties of La_{7/8}Sr_{1/8}MnO_3 single crystals|P. Wagner,I. Gordon,S. Mangin,V. V. Moshchalkov,Y. Bruynseraede,L. Pinsard,A. Revcolevschi###
(1321306, 1321306)
 Thisallows to study not only the influence of the spin configuration on themagneto-transport properties (CMR effect) but also the role of orbital orderand disorder.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 269, 'K', 1],[204.0, 12, 'T', 4],[220.0, 50, 'T', 4],[252.0, 20, 'T', 5]

C
###Influence of the cooperative Jahn-Teller effect on the transport- and magnetic properties of La_{7/8}Sr_{1/8}MnO_3 single crystals|P. Wagner,I. Gordon,S. Mangin,V. V. Moshchalkov,Y. Bruynseraede,L. Pinsard,A. Revcolevschi###
(1321374, 1321374)
 The orbital ordering transition (at 269 K in zero magnetic field)causes a doubling of the resistivity (regardless of the CMR effect in appliedmagnetic fields) and a drop of the paramagnetic susceptibility.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 269, 'K', 0],[136.0, 12, 'T', 3],[152.0, 50, 'T', 3],[184.0, 20, 'T', 4]

La
###Silence of magnetic layers to magnetoresistive process and electronic separation at low temperatures in (La, Sm)Mn$_2$Ge$_2$|E. V. Sampathkumaran,R. Mallik,P. L. Paulose,Subham Majumdar###
(1321639, 1321639)
Silence of magnetic layers to magnetoresistive process and electronic separation at low temperatures in (La, Sm)Mn2Ge2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 30, 'K', 2],[273.0, 100, 'K', 4]

Sm
###Silence of magnetic layers to magnetoresistive process and electronic separation at low temperatures in (La, Sm)Mn$_2$Ge$_2$|E. V. Sampathkumaran,R. Mallik,P. L. Paulose,Subham Majumdar###
(1321642, 1321642)
Silence of magnetic layers to magnetoresistive process and electronic separation at low temperatures in (La, Sm)Mn2Ge2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 30, 'K', 2],[270.0, 100, 'K', 4]

Mn2Ge2
###Silence of magnetic layers to magnetoresistive process and electronic separation at low temperatures in (La, Sm)Mn$_2$Ge$_2$|E. V. Sampathkumaran,R. Mallik,P. L. Paulose,Subham Majumdar###
(1321644, 1321647)
Silence of magnetic layers to magnetoresistive process and electronic separation at low temperatures in (La, Sm)Mn2Ge2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 30, 'K', 2],[265.0, 100, 'K', 4]

LaMn2Ge2
###Silence of magnetic layers to magnetoresistive process and electronic separation at low temperatures in (La, Sm)Mn$_2$Ge$_2$|E. V. Sampathkumaran,R. Mallik,P. L. Paulose,Subham Majumdar###
(1321689, 1321693)
 A closer look at the temperature (T) dependence of magnetoresistance (MR) oftwo polycrystalline magnetic compounds, LaMn2Ge2 and SmMn2Ge2,previously reported by us, is made.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 30, 'K', 1],[219.0, 100, 'K', 3]

SmMn2Ge2
###Silence of magnetic layers to magnetoresistive process and electronic separation at low temperatures in (La, Sm)Mn$_2$Ge$_2$|E. V. Sampathkumaran,R. Mallik,P. L. Paulose,Subham Majumdar###
(1321697, 1321701)
 A closer look at the temperature (T) dependence of magnetoresistance (MR) oftwo polycrystalline magnetic compounds, LaMn2Ge2 and SmMn2Ge2,previously reported by us, is made.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 30, 'K', 1],[211.0, 100, 'K', 3]

(H)
###Silence of magnetic layers to magnetoresistive process and electronic separation at low temperatures in (La, Sm)Mn$_2$Ge$_2$|E. V. Sampathkumaran,R. Mallik,P. L. Paulose,Subham Majumdar###
(1321809, 1321811)
 A common feature for both these compoundsis that the low temperature MR is positive (say, below, 30 K) in spite of thefact that both are ferromagnetic at such low temperatures; in addition, MR as afunction of magnetic field (H) does not track magnetization (M) in the sensethat M<missing VAR> saturates at low fields, while MR varies linearly with H.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 30, 'K', 0],[101.0, 100, 'K', 2]

H
###Silence of magnetic layers to magnetoresistive process and electronic separation at low temperatures in (La, Sm)Mn$_2$Ge$_2$|E. V. Sampathkumaran,R. Mallik,P. L. Paulose,Subham Majumdar###
(1321856, 1321856)
 A common feature for both these compoundsis that the low temperature MR is positive (say, below, 30 K) in spite of thefact that both are ferromagnetic at such low temperatures; in addition, MR as afunction of magnetic field (H) does not track magnetization (M) in the sensethat M<missing VAR> saturates at low fields, while MR varies linearly with H.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 30, 'K', 0],[56.0, 100, 'K', 2]

SmMn2Ge2
###Silence of magnetic layers to magnetoresistive process and electronic separation at low temperatures in (La, Sm)Mn$_2$Ge$_2$|E. V. Sampathkumaran,R. Mallik,P. L. Paulose,Subham Majumdar###
(1321950, 1321954)
 Interestingly enough, as the T<missing VAR> isincreased, say around 100 K, these magnetic layers dominate MR process asevidenced by the tracking of M<missing VAR> and MR in SmMn2Ge2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[193.0, 30, 'K', 2],[38.0, 100, 'K', 0]

F/O/F
###Resonant Spin-Dependent Tunneling in Spin-Valve Junctions in the Presence of Paramagnetic Impurities|A. Vedyayev,D. Bagrets,A. Bagrets,B. Dieny###
(1322064, 1322068)
 The tunnel magnetoresistance (TMR) of F/O/F magnetic junctions, (Fs<missing VAR> areferromagnetic layers and O is an oxide spacer) in the presence of magneticimpurities within the barrier, is investigated.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

F
###Resonant Spin-Dependent Tunneling in Spin-Valve Junctions in the Presence of Paramagnetic Impurities|A. Vedyayev,D. Bagrets,A. Bagrets,B. Dieny###
(1322076, 1322076)
 The tunnel magnetoresistance (TMR) of F/O/F magnetic junctions, (Fs<missing VAR> areferromagnetic layers and O is an oxide spacer) in the presence of magneticimpurities within the barrier, is investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Resonant Spin-Dependent Tunneling in Spin-Valve Junctions in the Presence of Paramagnetic Impurities|A. Vedyayev,D. Bagrets,A. Bagrets,B. Dieny###
(1322088, 1322088)
 The tunnel magnetoresistance (TMR) of F/O/F magnetic junctions, (Fs<missing VAR> areferromagnetic layers and O is an oxide spacer) in the presence of magneticimpurities within the barrier, is investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S1
###Resonant Spin-Dependent Tunneling in Spin-Valve Junctions in the Presence of Paramagnetic Impurities|A. Vedyayev,D. Bagrets,A. Bagrets,B. Dieny###
(1322233, 1322234)
 Consequently, the resonance levels of the systemformed by a tunneling electron and a paramagnetic impurity with spin S1, are asextet.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Resonant Spin-Dependent Tunneling in Spin-Valve Junctions in the Presence of Paramagnetic Impurities|A. Vedyayev,D. Bagrets,A. Bagrets,B. Dieny###
(1322245, 1322245)
 As a result the resonant tunneling depends on the direction of thetunneling electron spin.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Resonant Spin-Dependent Tunneling in Spin-Valve Junctions in the Presence of Paramagnetic Impurities|A. Vedyayev,D. Bagrets,A. Bagrets,B. Dieny###
(1322277, 1322277)
 At low temperatures and zero bias voltage the TMR ofthe considered system may be larger than TMR of the same structure withoutparamagnetic impurities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I(V)
###Resonant Spin-Dependent Tunneling in Spin-Valve Junctions in the Presence of Paramagnetic Impurities|A. Vedyayev,D. Bagrets,A. Bagrets,B. Dieny###
(1322445, 1322448)
 It is also shown thatasymmetry in the location of the impurities within the barrier can lead toasymmetry in I(V) characteristics of impurity assisted current and twomechanisms responsible for the origin of this effect are established.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magnetoresistance From Quantum Interference Effects in Ferromagnets|N. Manyala,Y Siids,J. F. DiTusa,G. Aeppli,D. P. Young,Z. Fisk###
(1322694, 1322694)
 In the low carrier density systemsinvestigated to date as well as the manganites, a key feature is that theelectrical conduction is due to a different set of electrons than the localizedelectrons responsible for the magnetism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

InAs/AlSb
###Electrical spin injection and detection in a semiconductor. Is it feasible?|A. T. Filip,B. H. Hoving,F. J. Jedema,B. J. van Wees###
(1323129, 1323133)
 Westudied submicron lateral spin valve junctions, based on high mobilityInAs/AlSb two-dimensional electron gas (2DEG), with Ni, Co and Permalloy asferromagnetic electrodes.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Ni
###Electrical spin injection and detection in a semiconductor. Is it feasible?|A. T. Filip,B. H. Hoving,F. J. Jedema,B. J. van Wees###
(1323153, 1323153)
 Westudied submicron lateral spin valve junctions, based on high mobilityInAs/AlSb two-dimensional electron gas (2DEG), with Ni, Co and Permalloy asferromagnetic electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Electrical spin injection and detection in a semiconductor. Is it feasible?|A. T. Filip,B. H. Hoving,F. J. Jedema,B. J. van Wees###
(1323156, 1323156)
 Westudied submicron lateral spin valve junctions, based on high mobilityInAs/AlSb two-dimensional electron gas (2DEG), with Ni, Co and Permalloy asferromagnetic electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Electrical spin injection and detection in a semiconductor. Is it feasible?|A. T. Filip,B. H. Hoving,F. J. Jedema,B. J. van Wees###
(1323170, 1323170)
 In the standard geometry it is very difficult toseparate true spin injection from other effects, including local Hall effect,anomalous magnetoresistance (AMR) contribution from the ferromagneticelectrodes and weak localization/anti-localization corrections, which canclosely mimic the signal expected from spin valve effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La
###Muon Spin Relaxation Study of (La, Ca)MnO3|R. H. Heffner,J. E. Sonier,D. E. MacLaughlin,G. J. Nieuwenhuys,G. M. Luke,Y. J. Uemura,S-W. Cheong,G. Balakrishnan###
(1323418, 1323418)
Muon Spin Relaxation Study of (La, Ca)MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 0.0, ',', 2],[126.0, 0.06, ',', 2],[129.0, 0.18, ',', 2],[132.0, 0.33, ',', 2],[134.0, 0.67, 'and', 2],[226.0, 0.83, 'meV', 4]

Ca
###Muon Spin Relaxation Study of (La, Ca)MnO3|R. H. Heffner,J. E. Sonier,D. E. MacLaughlin,G. J. Nieuwenhuys,G. M. Luke,Y. J. Uemura,S-W. Cheong,G. Balakrishnan###
(1323421, 1323421)
Muon Spin Relaxation Study of (La, Ca)MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 0.0, ',', 2],[123.0, 0.06, ',', 2],[126.0, 0.18, ',', 2],[129.0, 0.33, ',', 2],[131.0, 0.67, 'and', 2],[223.0, 0.83, 'meV', 4]

MnO3
###Muon Spin Relaxation Study of (La, Ca)MnO3|R. H. Heffner,J. E. Sonier,D. E. MacLaughlin,G. J. Nieuwenhuys,G. M. Luke,Y. J. Uemura,S-W. Cheong,G. Balakrishnan###
(1323423, 1323425)
Muon Spin Relaxation Study of (La, Ca)MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 0.0, ',', 2],[119.0, 0.06, ',', 2],[122.0, 0.18, ',', 2],[125.0, 0.33, ',', 2],[127.0, 0.67, 'and', 2],[219.0, 0.83, 'meV', 4]

Ca
###Muon Spin Relaxation Study of (La, Ca)MnO3|R. H. Heffner,J. E. Sonier,D. E. MacLaughlin,G. J. Nieuwenhuys,G. M. Luke,Y. J. Uemura,S-W. Cheong,G. Balakrishnan###
(1323455, 1323455)
 We report predominantly zero field muon spin relaxation measurements in aseries of Ca-doped LaMnO3 compounds which includes the colossalmagnetoresistive manganites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 0.0, ',', 1],[89.0, 0.06, ',', 1],[92.0, 0.18, ',', 1],[95.0, 0.33, ',', 1],[97.0, 0.67, 'and', 1],[189.0, 0.83, 'meV', 3]

LaMnO3
###Muon Spin Relaxation Study of (La, Ca)MnO3|R. H. Heffner,J. E. Sonier,D. E. MacLaughlin,G. J. Nieuwenhuys,G. M. Luke,Y. J. Uemura,S-W. Cheong,G. Balakrishnan###
(1323459, 1323462)
 We report predominantly zero field muon spin relaxation measurements in aseries of Ca-doped LaMnO3 compounds which includes the colossalmagnetoresistive manganites.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 0.0, ',', 1],[82.0, 0.06, ',', 1],[85.0, 0.18, ',', 1],[88.0, 0.33, ',', 1],[90.0, 0.67, 'and', 1],[182.0, 0.83, 'meV', 3]

La1-xCa
###Muon Spin Relaxation Study of (La, Ca)MnO3|R. H. Heffner,J. E. Sonier,D. E. MacLaughlin,G. J. Nieuwenhuys,G. M. Luke,Y. J. Uemura,S-W. Cheong,G. Balakrishnan###
(1323527, 1323531)
 Our principal result is a systematic study of thespin-lattice relaxation rates 1/T<missing VAR>1 and magnetic order parameters in the seriesLa1-xCax<missing VAR>MnO3, x<missing VAR>  0.0, 0.06, 0.18, 0.33, 0.67 and 1.0.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[10.0, 0.0, ',', 0],[13.0, 0.06, ',', 0],[16.0, 0.18, ',', 0],[19.0, 0.33, ',', 0],[21.0, 0.67, 'and', 0],[113.0, 0.83, 'meV', 2]

MnO3
###Muon Spin Relaxation Study of (La, Ca)MnO3|R. H. Heffner,J. E. Sonier,D. E. MacLaughlin,G. J. Nieuwenhuys,G. M. Luke,Y. J. Uemura,S-W. Cheong,G. Balakrishnan###
(1323533, 1323535)
 Our principal result is a systematic study of thespin-lattice relaxation rates 1/T<missing VAR>1 and magnetic order parameters in the seriesLa1-xCax<missing VAR>MnO3, x<missing VAR>  0.0, 0.06, 0.18, 0.33, 0.67 and 1.0.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 0.0, ',', 0],[9.0, 0.06, ',', 0],[12.0, 0.18, ',', 0],[15.0, 0.33, ',', 0],[17.0, 0.67, 'and', 0],[109.0, 0.83, 'meV', 2]

In
###Muon Spin Relaxation Study of (La, Ca)MnO3|R. H. Heffner,J. E. Sonier,D. E. MacLaughlin,G. J. Nieuwenhuys,G. M. Luke,Y. J. Uemura,S-W. Cheong,G. Balakrishnan###
(1323557, 1323557)
 In LaMnO3 andCaMnO3 we find very narrow critical regions near the Neel temperatures T<missing VAR>N andtemperature independent 1/T<missing VAR>1 values above T<missing VAR>N.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 0.0, ',', 1],[13.0, 0.06, ',', 1],[10.0, 0.18, ',', 1],[7.0, 0.33, ',', 1],[5.0, 0.67, 'and', 1],[87.0, 0.83, 'meV', 1]

LaMnO3
###Muon Spin Relaxation Study of (La, Ca)MnO3|R. H. Heffner,J. E. Sonier,D. E. MacLaughlin,G. J. Nieuwenhuys,G. M. Luke,Y. J. Uemura,S-W. Cheong,G. Balakrishnan###
(1323559, 1323562)
 In LaMnO3 andCaMnO3 we find very narrow critical regions near the Neel temperatures T<missing VAR>N andtemperature independent 1/T<missing VAR>1 values above T<missing VAR>N.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 0.0, ',', 1],[15.0, 0.06, ',', 1],[12.0, 0.18, ',', 1],[9.0, 0.33, ',', 1],[7.0, 0.67, 'and', 1],[82.0, 0.83, 'meV', 1]

CaMnO3
###Muon Spin Relaxation Study of (La, Ca)MnO3|R. H. Heffner,J. E. Sonier,D. E. MacLaughlin,G. J. Nieuwenhuys,G. M. Luke,Y. J. Uemura,S-W. Cheong,G. Balakrishnan###
(1323567, 1323570)
 In LaMnO3 andCaMnO3 we find very narrow critical regions near the Neel temperatures T<missing VAR>N andtemperature independent 1/T<missing VAR>1 values above T<missing VAR>N.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 0.0, ',', 1],[23.0, 0.06, ',', 1],[20.0, 0.18, ',', 1],[17.0, 0.33, ',', 1],[15.0, 0.67, 'and', 1],[74.0, 0.83, 'meV', 1]

N
###Muon Spin Relaxation Study of (La, Ca)MnO3|R. H. Heffner,J. E. Sonier,D. E. MacLaughlin,G. J. Nieuwenhuys,G. M. Luke,Y. J. Uemura,S-W. Cheong,G. Balakrishnan###
(1323593, 1323593)
 In LaMnO3 andCaMnO3 we find very narrow critical regions near the Neel temperatures T<missing VAR>N andtemperature independent 1/T<missing VAR>1 values above T<missing VAR>N.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 0.0, ',', 1],[49.0, 0.06, ',', 1],[46.0, 0.18, ',', 1],[43.0, 0.33, ',', 1],[41.0, 0.67, 'and', 1],[51.0, 0.83, 'meV', 1]

N
###Muon Spin Relaxation Study of (La, Ca)MnO3|R. H. Heffner,J. E. Sonier,D. E. MacLaughlin,G. J. Nieuwenhuys,G. M. Luke,Y. J. Uemura,S-W. Cheong,G. Balakrishnan###
(1323612, 1323612)
 In LaMnO3 andCaMnO3 we find very narrow critical regions near the Neel temperatures T<missing VAR>N andtemperature independent 1/T<missing VAR>1 values above T<missing VAR>N.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 0.0, ',', 1],[68.0, 0.06, ',', 1],[65.0, 0.18, ',', 1],[62.0, 0.33, ',', 1],[60.0, 0.67, 'and', 1],[32.0, 0.83, 'meV', 1]

LaMnO3
###Muon Spin Relaxation Study of (La, Ca)MnO3|R. H. Heffner,J. E. Sonier,D. E. MacLaughlin,G. J. Nieuwenhuys,G. M. Luke,Y. J. Uemura,S-W. Cheong,G. Balakrishnan###
(1323626, 1323629)
 From the 1/T<missing VAR>1 in LaMnO3 wederive an exchange integral J<missing VAR>  0.83 meV which is consistent with the meanfield expression for T<missing VAR>N.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 0.0, ',', 2],[82.0, 0.06, ',', 2],[79.0, 0.18, ',', 2],[76.0, 0.33, ',', 2],[74.0, 0.67, 'and', 2],[15.0, 0.83, 'meV', 0]

N
###Muon Spin Relaxation Study of (La, Ca)MnO3|R. H. Heffner,J. E. Sonier,D. E. MacLaughlin,G. J. Nieuwenhuys,G. M. Luke,Y. J. Uemura,S-W. Cheong,G. Balakrishnan###
(1323666, 1323666)
 From the 1/T<missing VAR>1 in LaMnO3 wederive an exchange integral J<missing VAR>  0.83 meV which is consistent with the meanfield expression for T<missing VAR>N.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 0.0, ',', 2],[122.0, 0.06, ',', 2],[119.0, 0.18, ',', 2],[116.0, 0.33, ',', 2],[114.0, 0.67, 'and', 2],[22.0, 0.83, 'meV', 0]

CaMnO3
###Muon Spin Relaxation Study of (La, Ca)MnO3|R. H. Heffner,J. E. Sonier,D. E. MacLaughlin,G. J. Nieuwenhuys,G. M. Luke,Y. J. Uemura,S-W. Cheong,G. Balakrishnan###
(1323681, 1323684)
 All of the doped manganites except CaMnO3 displayanomalously slow, spatially inhomogeneous spin-lattice relaxation below theirordering temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 0.0, ',', 3],[137.0, 0.06, ',', 3],[134.0, 0.18, ',', 3],[131.0, 0.33, ',', 3],[129.0, 0.67, 'and', 3],[37.0, 0.83, 'meV', 1]

In
###Muon Spin Relaxation Study of (La, Ca)MnO3|R. H. Heffner,J. E. Sonier,D. E. MacLaughlin,G. J. Nieuwenhuys,G. M. Luke,Y. J. Uemura,S-W. Cheong,G. Balakrishnan###
(1323714, 1323714)
 In the ferromagnetic (FM) insulatingLa0.82Ca0.18MnO3 and ferromagnetic conducting La0.67Ca0.33MnO3systems we show that there exists a bi-modal distribution of muSR<missing VAR> rateslambdaf<missing VAR> and lambdas<missing VAR> associated with relatively fast and slow Mnfluctuation rates, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 0.0, ',', 4],[170.0, 0.06, ',', 4],[167.0, 0.18, ',', 4],[164.0, 0.33, ',', 4],[162.0, 0.67, 'and', 4],[70.0, 0.83, 'meV', 2]

F
###Muon Spin Relaxation Study of (La, Ca)MnO3|R. H. Heffner,J. E. Sonier,D. E. MacLaughlin,G. J. Nieuwenhuys,G. M. Luke,Y. J. Uemura,S-W. Cheong,G. Balakrishnan###
(1323721, 1323721)
 In the ferromagnetic (FM) insulatingLa0.82Ca0.18MnO3 and ferromagnetic conducting La0.67Ca0.33MnO3systems we show that there exists a bi-modal distribution of muSR<missing VAR> rateslambdaf<missing VAR> and lambdas<missing VAR> associated with relatively fast and slow Mnfluctuation rates, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[180.0, 0.0, ',', 4],[177.0, 0.06, ',', 4],[174.0, 0.18, ',', 4],[171.0, 0.33, ',', 4],[169.0, 0.67, 'and', 4],[77.0, 0.83, 'meV', 2]

La0.82Ca0.18MnO3
###Muon Spin Relaxation Study of (La, Ca)MnO3|R. H. Heffner,J. E. Sonier,D. E. MacLaughlin,G. J. Nieuwenhuys,G. M. Luke,Y. J. Uemura,S-W. Cheong,G. Balakrishnan###
(1323728, 1323734)
 In the ferromagnetic (FM) insulatingLa0.82Ca0.18MnO3 and ferromagnetic conducting La0.67Ca0.33MnO3systems we show that there exists a bi-modal distribution of muSR<missing VAR> rateslambdaf<missing VAR> and lambdas<missing VAR> associated with relatively fast and slow Mnfluctuation rates, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.036,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16399999999999998,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[187.0, 0.0, ',', 4],[184.0, 0.06, ',', 4],[181.0, 0.18, ',', 4],[178.0, 0.33, ',', 4],[176.0, 0.67, 'and', 4],[84.0, 0.83, 'meV', 2]

La0.67Ca0.33MnO3
###Muon Spin Relaxation Study of (La, Ca)MnO3|R. H. Heffner,J. E. Sonier,D. E. MacLaughlin,G. J. Nieuwenhuys,G. M. Luke,Y. J. Uemura,S-W. Cheong,G. Balakrishnan###
(1323742, 1323748)
 In the ferromagnetic (FM) insulatingLa0.82Ca0.18MnO3 and ferromagnetic conducting La0.67Ca0.33MnO3systems we show that there exists a bi-modal distribution of muSR<missing VAR> rateslambdaf<missing VAR> and lambdas<missing VAR> associated with relatively fast and slow Mnfluctuation rates, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.066,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.134,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[201.0, 0.0, ',', 4],[198.0, 0.06, ',', 4],[195.0, 0.18, ',', 4],[192.0, 0.33, ',', 4],[190.0, 0.67, 'and', 4],[98.0, 0.83, 'meV', 2]

S
###Muon Spin Relaxation Study of (La, Ca)MnO3|R. H. Heffner,J. E. Sonier,D. E. MacLaughlin,G. J. Nieuwenhuys,G. M. Luke,Y. J. Uemura,S-W. Cheong,G. Balakrishnan###
(1323774, 1323774)
 In the ferromagnetic (FM) insulatingLa0.82Ca0.18MnO3 and ferromagnetic conducting La0.67Ca0.33MnO3systems we show that there exists a bi-modal distribution of muSR<missing VAR> rateslambdaf<missing VAR> and lambdas<missing VAR> associated with relatively fast and slow Mnfluctuation rates, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[233.0, 0.0, ',', 4],[230.0, 0.06, ',', 4],[227.0, 0.18, ',', 4],[224.0, 0.33, ',', 4],[222.0, 0.67, 'and', 4],[130.0, 0.83, 'meV', 2]

Mn
###Muon Spin Relaxation Study of (La, Ca)MnO3|R. H. Heffner,J. E. Sonier,D. E. MacLaughlin,G. J. Nieuwenhuys,G. M. Luke,Y. J. Uemura,S-W. Cheong,G. Balakrishnan###
(1323800, 1323800)
 In the ferromagnetic (FM) insulatingLa0.82Ca0.18MnO3 and ferromagnetic conducting La0.67Ca0.33MnO3systems we show that there exists a bi-modal distribution of muSR<missing VAR> rateslambdaf<missing VAR> and lambdas<missing VAR> associated with relatively fast and slow Mnfluctuation rates, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[259.0, 0.0, ',', 4],[256.0, 0.06, ',', 4],[253.0, 0.18, ',', 4],[250.0, 0.33, ',', 4],[248.0, 0.67, 'and', 4],[156.0, 0.83, 'meV', 2]

F
###Muon Spin Relaxation Study of (La, Ca)MnO3|R. H. Heffner,J. E. Sonier,D. E. MacLaughlin,G. J. Nieuwenhuys,G. M. Luke,Y. J. Uemura,S-W. Cheong,G. Balakrishnan###
(1323826, 1323826)
 A physical picture is hypothesized for theseFM<missing VAR> phases in which the fast Mn rates are due to overdamped spin wavescharacteristic of a disordered FM<missing VAR>, and the slower Mn relaxation rates derivefrom distinct, relatively insulating regions in the sample.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[285.0, 0.0, ',', 5],[282.0, 0.06, ',', 5],[279.0, 0.18, ',', 5],[276.0, 0.33, ',', 5],[274.0, 0.67, 'and', 5],[182.0, 0.83, 'meV', 3]

Mn
###Muon Spin Relaxation Study of (La, Ca)MnO3|R. H. Heffner,J. E. Sonier,D. E. MacLaughlin,G. J. Nieuwenhuys,G. M. Luke,Y. J. Uemura,S-W. Cheong,G. Balakrishnan###
(1323839, 1323839)
 A physical picture is hypothesized for theseFM<missing VAR> phases in which the fast Mn rates are due to overdamped spin wavescharacteristic of a disordered FM<missing VAR>, and the slower Mn relaxation rates derivefrom distinct, relatively insulating regions in the sample.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[298.0, 0.0, ',', 5],[295.0, 0.06, ',', 5],[292.0, 0.18, ',', 5],[289.0, 0.33, ',', 5],[287.0, 0.67, 'and', 5],[195.0, 0.83, 'meV', 3]

F
###Muon Spin Relaxation Study of (La, Ca)MnO3|R. H. Heffner,J. E. Sonier,D. E. MacLaughlin,G. J. Nieuwenhuys,G. M. Luke,Y. J. Uemura,S-W. Cheong,G. Balakrishnan###
(1323864, 1323864)
 A physical picture is hypothesized for theseFM<missing VAR> phases in which the fast Mn rates are due to overdamped spin wavescharacteristic of a disordered FM<missing VAR>, and the slower Mn relaxation rates derivefrom distinct, relatively insulating regions in the sample.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[323.0, 0.0, ',', 5],[320.0, 0.06, ',', 5],[317.0, 0.18, ',', 5],[314.0, 0.33, ',', 5],[312.0, 0.67, 'and', 5],[220.0, 0.83, 'meV', 3]

Mn
###Muon Spin Relaxation Study of (La, Ca)MnO3|R. H. Heffner,J. E. Sonier,D. E. MacLaughlin,G. J. Nieuwenhuys,G. M. Luke,Y. J. Uemura,S-W. Cheong,G. Balakrishnan###
(1323874, 1323874)
 A physical picture is hypothesized for theseFM<missing VAR> phases in which the fast Mn rates are due to overdamped spin wavescharacteristic of a disordered FM<missing VAR>, and the slower Mn relaxation rates derivefrom distinct, relatively insulating regions in the sample.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[333.0, 0.0, ',', 5],[330.0, 0.06, ',', 5],[327.0, 0.18, ',', 5],[324.0, 0.33, ',', 5],[322.0, 0.67, 'and', 5],[230.0, 0.83, 'meV', 3]

Tc
###Magnetoresistance in High-Tc Superconductors: The Role of Vertex Corrections|Hiroshi Kontani###
(1323952, 1323952)
Magnetoresistance in High-Tc Superconductors The Role of Vertex Corrections.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 2, ',', 2]

In
###Magnetoresistance in High-Tc Superconductors: The Role of Vertex Corrections|Hiroshi Kontani###
(1323967, 1323967)
 In high-Tc cuprates, the orbital magnetoresistance in plane (MR,Deltarho/rho) is anomalously enhanced at lower tempemeratures comparedwith conventional Fermi liquids, and thus Kohlers<missing VAR> rule is strongly violated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 2, ',', 1]

Tc
###Magnetoresistance in High-Tc Superconductors: The Role of Vertex Corrections|Hiroshi Kontani###
(1323971, 1323971)
 In high-Tc cuprates, the orbital magnetoresistance in plane (MR,Deltarho/rho) is anomalously enhanced at lower tempemeratures comparedwith conventional Fermi liquids, and thus Kohlers<missing VAR> rule is strongly violated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 2, ',', 1]

H
###Magnetoresistance in High-Tc Superconductors: The Role of Vertex Corrections|Hiroshi Kontani###
(1324076, 1324076)
Moreover, it should be noted that an intimate relation between the MR and theHall coefficient (R<missing VAR>H), Deltarho/rho propto (R<missing VAR>H/rho)2, holds wellexperimentally, and is called the modified Kohlers<missing VAR> rule.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 2, ',', 0]

H
###Magnetoresistance in High-Tc Superconductors: The Role of Vertex Corrections|Hiroshi Kontani###
(1324089, 1324089)
Moreover, it should be noted that an intimate relation between the MR and theHall coefficient (R<missing VAR>H), Deltarho/rho propto (R<missing VAR>H/rho)2, holds wellexperimentally, and is called the modified Kohlers<missing VAR> rule.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 2, ',', 0]

In
###Magnetoresistance in High-Tc Superconductors: The Role of Vertex Corrections|Hiroshi Kontani###
(1324120, 1324120)
 In this letter, westudy this long-standing problem in terms of the nearly antiferromagnetic (AF)Fermi liquid.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 2, ',', 1]

F
###Magnetoresistance in High-Tc Superconductors: The Role of Vertex Corrections|Hiroshi Kontani###
(1324154, 1324154)
 In this letter, westudy this long-standing problem in terms of the nearly antiferromagnetic (AF)Fermi liquid.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 2, ',', 1]

VC
###Magnetoresistance in High-Tc Superconductors: The Role of Vertex Corrections|Hiroshi Kontani###
(1324192, 1324193)
 We analyze the exact expression for the MR by including thevertex corrections (VCs) to keep the conservation laws, and find theapproximate scaling relation Deltarho/rho propto xiAF4 /rho2(xiAF being the AF correlation length.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 2, ',', 2]

F4
###Magnetoresistance in High-Tc Superconductors: The Role of Vertex Corrections|Hiroshi Kontani###
(1324230, 1324231)
 We analyze the exact expression for the MR by including thevertex corrections (VCs) to keep the conservation laws, and find theapproximate scaling relation Deltarho/rho propto xiAF4 /rho2(xiAF being the AF correlation length.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 2, ',', 2]

F
###Magnetoresistance in High-Tc Superconductors: The Role of Vertex Corrections|Hiroshi Kontani###
(1324241, 1324241)
 We analyze the exact expression for the MR by including thevertex corrections (VCs) to keep the conservation laws, and find theapproximate scaling relation Deltarho/rho propto xiAF4 /rho2(xiAF being the AF correlation length.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 2, ',', 2]

F
###Magnetoresistance in High-Tc Superconductors: The Role of Vertex Corrections|Hiroshi Kontani###
(1324248, 1324248)
 We analyze the exact expression for the MR by including thevertex corrections (VCs) to keep the conservation laws, and find theapproximate scaling relation Deltarho/rho propto xiAF4 /rho2(xiAF being the AF correlation length.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 2, ',', 2]

F
###Magnetoresistance in High-Tc Superconductors: The Role of Vertex Corrections|Hiroshi Kontani###
(1324265, 1324265)
 in the presence of AFfluctuations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[172.0, 2, ',', 3]

F4
###Magnetoresistance in High-Tc Superconductors: The Role of Vertex Corrections|Hiroshi Kontani###
(1324277, 1324278)
 The factor xiAF4, which comes from the VCs<missing VAR> for thecurrent, gives the additional temperature dependence.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[184.0, 2, ',', 4]

VC
###Magnetoresistance in High-Tc Superconductors: The Role of Vertex Corrections|Hiroshi Kontani###
(1324289, 1324290)
 The factor xiAF4, which comes from the VCs<missing VAR> for thecurrent, gives the additional temperature dependence.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[196.0, 2, ',', 4]

H
###Magnetoresistance in High-Tc Superconductors: The Role of Vertex Corrections|Hiroshi Kontani###
(1324326, 1324326)
 By taking account of therelation R<missing VAR>H propto xiAF2 [Kontani et al.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[233.0, 2, ',', 5]

F2
###Magnetoresistance in High-Tc Superconductors: The Role of Vertex Corrections|Hiroshi Kontani###
(1324332, 1324333)
 By taking account of therelation R<missing VAR>H propto xiAF2 [Kontani et al.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[239.0, 2, ',', 5]

P
###Magnetoresistance in High-Tc Superconductors: The Role of Vertex Corrections|Hiroshi Kontani###
(1324344, 1324344)
, PR<missing VAR>B 59 (1999) 14723.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[251.0, 2, ',', 6]

B
###Magnetoresistance in High-Tc Superconductors: The Role of Vertex Corrections|Hiroshi Kontani###
(1324346, 1324346)
, PR<missing VAR>B 59 (1999) 14723.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[253.0, 2, ',', 6]

In
###Magnetoresistance in High-Tc Superconductors: The Role of Vertex Corrections|Hiroshi Kontani###
(1324378, 1324378)
 In conclusion, based on theFermi liquid theory, the famous it seemingly non-Fermi liquid behaviors ofthe Hall coefficient and the MR in high-Tc cuprates are naturally understood onan equal footing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[285.0, 2, ',', 8]

Tc
###Magnetoresistance in High-Tc Superconductors: The Role of Vertex Corrections|Hiroshi Kontani###
(1324433, 1324433)
 In conclusion, based on theFermi liquid theory, the famous it seemingly non-Fermi liquid behaviors ofthe Hall coefficient and the MR in high-Tc cuprates are naturally understood onan equal footing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[340.0, 2, ',', 8]

In
###General Formula for the Magnetoresistance on the Basis of the Fermi Liquid Theory|Hiroshi Kontani###
(1324890, 1324890)
 In conclusion, the present work enables us to study the MRwith satisfying the conserving laws which is highly demanded in stronglycorrelated electrons, such as high-Tc superconductors, organic metals, andheavy Fermion systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###General Formula for the Magnetoresistance on the Basis of the Fermi Liquid Theory|Hiroshi Kontani###
(1324949, 1324949)
 In conclusion, the present work enables us to study the MRwith satisfying the conserving laws which is highly demanded in stronglycorrelated electrons, such as high-Tc superconductors, organic metals, andheavy Fermion systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###General Formula for the Magnetoresistance on the Basis of the Fermi Liquid Theory|Hiroshi Kontani###
(1324969, 1324969)
 In Appendix D<missing VAR>, we reply to the comment by O.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###General Formula for the Magnetoresistance on the Basis of the Fermi Liquid Theory|Hiroshi Kontani###
(1324988, 1324988)
 In Appendix D<missing VAR>, we reply to the comment by O.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Colossal Magnetoresistant Materials: The Key Role of Phase Separation|Elbio Dagotto,Takashi Hotta,Adriana Moreo###
(1325496, 1325496)
 The study of the manganese oxides, widely known as manganites, that exhibitthe Colossal Magnetoresistance (CMR) effect is among the main areas ofresearch within the area of Strongly Correlated Electrons.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr3Ru2O7
###Electrical Transport Properties of Single Crystal Sr3Ru2O7: The Possible Existence of an Antiferromagnetic Instability at Low Temperatures|Y. Liu,R. Jin,Z. Q. Mao,K. D. Nelson,M. K. Haas,R. J. Cava###
(1325976, 1325981)
Electrical Transport Properties of Single Crystal Sr3Ru2O7 The Possible Existence of an Antiferromagnetic Instability at Low Temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 300, 'K', 2]

H
###Electrical Transport Properties of Single Crystal Sr3Ru2O7: The Possible Existence of an Antiferromagnetic Instability at Low Temperatures|Y. Liu,R. Jin,Z. Q. Mao,K. D. Nelson,M. K. Haas,R. J. Cava###
(1326019, 1326019)
 We report the results of Hall coefficient R<missing VAR>H and magnetoresistance (MR)measurements on single crystalline samples of Sr3Ru2O7 grown by the floatingzone method.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 300, 'K', 1]

Sr3Ru2O7
###Electrical Transport Properties of Single Crystal Sr3Ru2O7: The Possible Existence of an Antiferromagnetic Instability at Low Temperatures|Y. Liu,R. Jin,Z. Q. Mao,K. D. Nelson,M. K. Haas,R. J. Cava###
(1326043, 1326048)
 We report the results of Hall coefficient R<missing VAR>H and magnetoresistance (MR)measurements on single crystalline samples of Sr3Ru2O7 grown by the floatingzone method.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 300, 'K', 1]

H
###Electrical Transport Properties of Single Crystal Sr3Ru2O7: The Possible Existence of an Antiferromagnetic Instability at Low Temperatures|Y. Liu,R. Jin,Z. Q. Mao,K. D. Nelson,M. K. Haas,R. J. Cava###
(1326065, 1326065)
 R<missing VAR>H was found to be positive over the entire temperature rangestudied (0.3 - 300K).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 300, 'K', 0]

K
###Electrical Transport Properties of Single Crystal Sr3Ru2O7: The Possible Existence of an Antiferromagnetic Instability at Low Temperatures|Y. Liu,R. Jin,Z. Q. Mao,K. D. Nelson,M. K. Haas,R. J. Cava###
(1326142, 1326142)
 Its temperature (T) dependence follows closely that ofthe magnetic susceptibility, including a maximum at a characteristictemperature T<missing VAR>17 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 300, 'K', 1]

H
###Electrical Transport Properties of Single Crystal Sr3Ru2O7: The Possible Existence of an Antiferromagnetic Instability at Low Temperatures|Y. Liu,R. Jin,Z. Q. Mao,K. D. Nelson,M. K. Haas,R. J. Cava###
(1326152, 1326152)
 We show that R<missing VAR>H can be decomposed into normal andanomalous parts as in the case of skew scattering in heavy-fermion compoundsand ferromagnetic metals.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 300, 'K', 2]

Sr3Ru2O7
###Electrical Transport Properties of Single Crystal Sr3Ru2O7: The Possible Existence of an Antiferromagnetic Instability at Low Temperatures|Y. Liu,R. Jin,Z. Q. Mao,K. D. Nelson,M. K. Haas,R. J. Cava###
(1326272, 1326277)
 This, together with the observation that thelongitudinal MR is greater than the transverse MR at the same magnetic fieldand temperature, suggests that magnetic fluctuations dominate the electricaltransport properties in Sr3Ru2O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 300, 'K', 3]

In
###Electrical Transport Properties of Single Crystal Sr3Ru2O7: The Possible Existence of an Antiferromagnetic Instability at Low Temperatures|Y. Liu,R. Jin,Z. Q. Mao,K. D. Nelson,M. K. Haas,R. J. Cava###
(1326342, 1326342)
 In addition, a non-monotonicbehavior in the field dependence of the MR was found at low temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[248.0, 300, 'K', 5]

Sr3Ru2O7
###Electrical Transport Properties of Single Crystal Sr3Ru2O7: The Possible Existence of an Antiferromagnetic Instability at Low Temperatures|Y. Liu,R. Jin,Z. Q. Mao,K. D. Nelson,M. K. Haas,R. J. Cava###
(1326399, 1326404)
 Theseobservations suggest that the magnetic correlations in Sr3Ru2O7 at ambientpressure undergo a qualitative change as the temperature is lowered.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[305.0, 300, 'K', 6]

F
###Novel Phases in the Field Induced Spin Density Wave State in (TMTSF)_2PF_6|A. V. Kornilov,V. M. Pudalov,Y. Kitaoka,K. Ishida,T. Mito,J. S. Brooks,J. S. Qualls,J. A. A. J. Perenboom,N. Tateiwa,T. C. Kobayashi###
(1326528, 1326528)
Novel Phases in the Field Induced Spin Density Wave State in (TMTSF)2PF6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 16, 'T', 1],[78.0, 14, 'kbar', 1]

PF6
###Novel Phases in the Field Induced Spin Density Wave State in (TMTSF)_2PF_6|A. V. Kornilov,V. M. Pudalov,Y. Kitaoka,K. Ishida,T. Mito,J. S. Brooks,J. S. Qualls,J. A. A. J. Perenboom,N. Tateiwa,T. C. Kobayashi###
(1326531, 1326533)
Novel Phases in the Field Induced Spin Density Wave State in (TMTSF)2PF6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.8571428571428571,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 16, 'T', 1],[73.0, 14, 'kbar', 1]

F
###Novel Phases in the Field Induced Spin Density Wave State in (TMTSF)_2PF_6|A. V. Kornilov,V. M. Pudalov,Y. Kitaoka,K. Ishida,T. Mito,J. S. Brooks,J. S. Qualls,J. A. A. J. Perenboom,N. Tateiwa,T. C. Kobayashi###
(1326560, 1326560)
 Magnetoresistance measurements on the quasi one-dimensional organic conductor(TMTSF)2PF6 performed in magnetic fields B up to 16T, temperatures T<missing VAR> down to0.12K and under pressures P up to 14kbar have revealed new phases on its P-B-T<missing VAR>phase diagram.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 16, 'T', 0],[46.0, 14, 'kbar', 0]

PF6
###Novel Phases in the Field Induced Spin Density Wave State in (TMTSF)_2PF_6|A. V. Kornilov,V. M. Pudalov,Y. Kitaoka,K. Ishida,T. Mito,J. S. Brooks,J. S. Qualls,J. A. A. J. Perenboom,N. Tateiwa,T. C. Kobayashi###
(1326563, 1326565)
 Magnetoresistance measurements on the quasi one-dimensional organic conductor(TMTSF)2PF6 performed in magnetic fields B up to 16T, temperatures T<missing VAR> down to0.12K and under pressures P up to 14kbar have revealed new phases on its P-B-T<missing VAR>phase diagram.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.8571428571428571,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 16, 'T', 0],[41.0, 14, 'kbar', 0]

B
###Novel Phases in the Field Induced Spin Density Wave State in (TMTSF)_2PF_6|A. V. Kornilov,V. M. Pudalov,Y. Kitaoka,K. Ishida,T. Mito,J. S. Brooks,J. S. Qualls,J. A. A. J. Perenboom,N. Tateiwa,T. C. Kobayashi###
(1326575, 1326575)
 Magnetoresistance measurements on the quasi one-dimensional organic conductor(TMTSF)2PF6 performed in magnetic fields B up to 16T, temperatures T<missing VAR> down to0.12K and under pressures P up to 14kbar have revealed new phases on its P-B-T<missing VAR>phase diagram.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 16, 'T', 0],[31.0, 14, 'kbar', 0]

K
###Novel Phases in the Field Induced Spin Density Wave State in (TMTSF)_2PF_6|A. V. Kornilov,V. M. Pudalov,Y. Kitaoka,K. Ishida,T. Mito,J. S. Brooks,J. S. Qualls,J. A. A. J. Perenboom,N. Tateiwa,T. C. Kobayashi###
(1326593, 1326593)
 Magnetoresistance measurements on the quasi one-dimensional organic conductor(TMTSF)2PF6 performed in magnetic fields B up to 16T, temperatures T<missing VAR> down to0.12K and under pressures P up to 14kbar have revealed new phases on its P-B-T<missing VAR>phase diagram.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 16, 'T', 0],[13.0, 14, 'kbar', 0]

P
###Novel Phases in the Field Induced Spin Density Wave State in (TMTSF)_2PF_6|A. V. Kornilov,V. M. Pudalov,Y. Kitaoka,K. Ishida,T. Mito,J. S. Brooks,J. S. Qualls,J. A. A. J. Perenboom,N. Tateiwa,T. C. Kobayashi###
(1326601, 1326601)
 Magnetoresistance measurements on the quasi one-dimensional organic conductor(TMTSF)2PF6 performed in magnetic fields B up to 16T, temperatures T<missing VAR> down to0.12K and under pressures P up to 14kbar have revealed new phases on its P-B-T<missing VAR>phase diagram.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 16, 'T', 0],[5.0, 14, 'kbar', 0]

P
###Novel Phases in the Field Induced Spin Density Wave State in (TMTSF)_2PF_6|A. V. Kornilov,V. M. Pudalov,Y. Kitaoka,K. Ishida,T. Mito,J. S. Brooks,J. S. Qualls,J. A. A. J. Perenboom,N. Tateiwa,T. C. Kobayashi###
(1326620, 1326620)
 Magnetoresistance measurements on the quasi one-dimensional organic conductor(TMTSF)2PF6 performed in magnetic fields B up to 16T, temperatures T<missing VAR> down to0.12K and under pressures P up to 14kbar have revealed new phases on its P-B-T<missing VAR>phase diagram.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 16, 'T', 0],[14.0, 14, 'kbar', 0]

B
###Novel Phases in the Field Induced Spin Density Wave State in (TMTSF)_2PF_6|A. V. Kornilov,V. M. Pudalov,Y. Kitaoka,K. Ishida,T. Mito,J. S. Brooks,J. S. Qualls,J. A. A. J. Perenboom,N. Tateiwa,T. C. Kobayashi###
(1326622, 1326622)
 Magnetoresistance measurements on the quasi one-dimensional organic conductor(TMTSF)2PF6 performed in magnetic fields B up to 16T, temperatures T<missing VAR> down to0.12K and under pressures P up to 14kbar have revealed new phases on its P-B-T<missing VAR>phase diagram.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 16, 'T', 0],[16.0, 14, 'kbar', 0]

FIS
###Novel Phases in the Field Induced Spin Density Wave State in (TMTSF)_2PF_6|A. V. Kornilov,V. M. Pudalov,Y. Kitaoka,K. Ishida,T. Mito,J. S. Brooks,J. S. Qualls,J. A. A. J. Perenboom,N. Tateiwa,T. C. Kobayashi###
(1326660, 1326662)
 We found a new boundary which subdivides the field induced spindensity wave (FISD<missing VAR>W) phase diagram into two regions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 16, 'T', 1],[54.0, 14, 'kbar', 1]

W
###Novel Phases in the Field Induced Spin Density Wave State in (TMTSF)_2PF_6|A. V. Kornilov,V. M. Pudalov,Y. Kitaoka,K. Ishida,T. Mito,J. S. Brooks,J. S. Qualls,J. A. A. J. Perenboom,N. Tateiwa,T. C. Kobayashi###
(1326664, 1326664)
 We found a new boundary which subdivides the field induced spindensity wave (FISD<missing VAR>W) phase diagram into two regions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 16, 'T', 1],[58.0, 14, 'kbar', 1]

FIS
###Novel Phases in the Field Induced Spin Density Wave State in (TMTSF)_2PF_6|A. V. Kornilov,V. M. Pudalov,Y. Kitaoka,K. Ishida,T. Mito,J. S. Brooks,J. S. Qualls,J. A. A. J. Perenboom,N. Tateiwa,T. C. Kobayashi###
(1326697, 1326699)
 We showed that alow-temperature region of the FISD<missing VAR>W diagram is characterized by a hysteresisbehavior typical for the first order transitions, as observed in a number ofstudies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 16, 'T', 2],[91.0, 14, 'kbar', 2]

W
###Novel Phases in the Field Induced Spin Density Wave State in (TMTSF)_2PF_6|A. V. Kornilov,V. M. Pudalov,Y. Kitaoka,K. Ishida,T. Mito,J. S. Brooks,J. S. Qualls,J. A. A. J. Perenboom,N. Tateiwa,T. C. Kobayashi###
(1326701, 1326701)
 We showed that alow-temperature region of the FISD<missing VAR>W diagram is characterized by a hysteresisbehavior typical for the first order transitions, as observed in a number ofstudies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 16, 'T', 2],[95.0, 14, 'kbar', 2]

In
###Novel Phases in the Field Induced Spin Density Wave State in (TMTSF)_2PF_6|A. V. Kornilov,V. M. Pudalov,Y. Kitaoka,K. Ishida,T. Mito,J. S. Brooks,J. S. Qualls,J. A. A. J. Perenboom,N. Tateiwa,T. C. Kobayashi###
(1326747, 1326747)
 In contrast to the common believe, in high temperature region of theFISD<missing VAR>W phase diagram, the hysteresis and, hence, the first order transitionswere found to disappear.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 16, 'T', 3],[141.0, 14, 'kbar', 3]

FIS
###Novel Phases in the Field Induced Spin Density Wave State in (TMTSF)_2PF_6|A. V. Kornilov,V. M. Pudalov,Y. Kitaoka,K. Ishida,T. Mito,J. S. Brooks,J. S. Qualls,J. A. A. J. Perenboom,N. Tateiwa,T. C. Kobayashi###
(1326773, 1326775)
 In contrast to the common believe, in high temperature region of theFISD<missing VAR>W phase diagram, the hysteresis and, hence, the first order transitionswere found to disappear.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[193.0, 16, 'T', 3],[167.0, 14, 'kbar', 3]

W
###Novel Phases in the Field Induced Spin Density Wave State in (TMTSF)_2PF_6|A. V. Kornilov,V. M. Pudalov,Y. Kitaoka,K. Ishida,T. Mito,J. S. Brooks,J. S. Qualls,J. A. A. J. Perenboom,N. Tateiwa,T. C. Kobayashi###
(1326777, 1326777)
 In contrast to the common believe, in high temperature region of theFISD<missing VAR>W phase diagram, the hysteresis and, hence, the first order transitionswere found to disappear.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[197.0, 16, 'T', 3],[171.0, 14, 'kbar', 3]

FIS
###Novel Phases in the Field Induced Spin Density Wave State in (TMTSF)_2PF_6|A. V. Kornilov,V. M. Pudalov,Y. Kitaoka,K. Ishida,T. Mito,J. S. Brooks,J. S. Qualls,J. A. A. J. Perenboom,N. Tateiwa,T. C. Kobayashi###
(1326880, 1326882)
 Nevertheless, sharp changes in the resistivity slopeare observed both in the low and high temperature domains indicating that thecascade of transitions between different subphases exists over all range of theFISD<missing VAR>W state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[300.0, 16, 'T', 4],[274.0, 14, 'kbar', 4]

W
###Novel Phases in the Field Induced Spin Density Wave State in (TMTSF)_2PF_6|A. V. Kornilov,V. M. Pudalov,Y. Kitaoka,K. Ishida,T. Mito,J. S. Brooks,J. S. Qualls,J. A. A. J. Perenboom,N. Tateiwa,T. C. Kobayashi###
(1326884, 1326884)
 Nevertheless, sharp changes in the resistivity slopeare observed both in the low and high temperature domains indicating that thecascade of transitions between different subphases exists over all range of theFISD<missing VAR>W state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[304.0, 16, 'T', 4],[278.0, 14, 'kbar', 4]

B
###Novel Phases in the Field Induced Spin Density Wave State in (TMTSF)_2PF_6|A. V. Kornilov,V. M. Pudalov,Y. Kitaoka,K. Ishida,T. Mito,J. S. Brooks,J. S. Qualls,J. A. A. J. Perenboom,N. Tateiwa,T. C. Kobayashi###
(1326917, 1326917)
 We also found that the temperature dependence of the resistance(at a constant B) changes sign at about the same boundary.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[337.0, 16, 'T', 5],[311.0, 14, 'kbar', 5]

I
###Metal-insulator transition in 2D: a role of the upper Habbard band|V. I. Kozub,and N. V. Agrinskaya###
(1327373, 1327373)
 We compare the theoretical predictions to the existingexperimental data and demonstrate that the model explains such features of the2D MIT<missing VAR> as scaling behavior in the critical region, saturation of MR and H/T<missing VAR>scaling of MR in the insulating limit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[405.0, 2, 'D', 6],[361.0, 2, 'D', 5],[326.0, 2, 'D', 5]

H
###Metal-insulator transition in 2D: a role of the upper Habbard band|V. I. Kozub,and N. V. Agrinskaya###
(1327400, 1327400)
 We compare the theoretical predictions to the existingexperimental data and demonstrate that the model explains such features of the2D MIT<missing VAR> as scaling behavior in the critical region, saturation of MR and H/T<missing VAR>scaling of MR in the insulating limit.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[432.0, 2, 'D', 6],[388.0, 2, 'D', 5],[353.0, 2, 'D', 5]

C
###Towards an understanding of CMR pyrochlore Tl2Mn2O7|C. I. Ventura,M. A. Gusmao,.###
(1327510, 1327510)
Towards an understanding of CMR pyrochlore Tl2Mn2O7.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[463.0, 1997, 'using', 9]

Tl2Mn2O7
###Towards an understanding of CMR pyrochlore Tl2Mn2O7|C. I. Ventura,M. A. Gusmao,.###
(1327516, 1327521)
Towards an understanding of CMR pyrochlore Tl2Mn2O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6363636363636364,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[452.0, 1997, 'using', 9]

Tl2Mn2O7
###Towards an understanding of CMR pyrochlore Tl2Mn2O7|C. I. Ventura,M. A. Gusmao,.###
(1327524, 1327529)
 Tl2Mn2O7 exhibits important differences with other colossal magnetoresistance(CMR) compounds, like the Mn-perovskites, in its crystal structure andelectronic properties, indicating the possibility of different mechanisms forCMR being present.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6363636363636364,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[444.0, 1997, 'using', 8]

C
###Towards an understanding of CMR pyrochlore Tl2Mn2O7|C. I. Ventura,M. A. Gusmao,.###
(1327547, 1327547)
 Tl2Mn2O7 exhibits important differences with other colossal magnetoresistance(CMR) compounds, like the Mn-perovskites, in its crystal structure andelectronic properties, indicating the possibility of different mechanisms forCMR being present.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[426.0, 1997, 'using', 8]

Mn
###Towards an understanding of CMR pyrochlore Tl2Mn2O7|C. I. Ventura,M. A. Gusmao,.###
(1327559, 1327559)
 Tl2Mn2O7 exhibits important differences with other colossal magnetoresistance(CMR) compounds, like the Mn-perovskites, in its crystal structure andelectronic properties, indicating the possibility of different mechanisms forCMR being present.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[414.0, 1997, 'using', 8]

C
###Towards an understanding of CMR pyrochlore Tl2Mn2O7|C. I. Ventura,M. A. Gusmao,.###
(1327595, 1327595)
 Tl2Mn2O7 exhibits important differences with other colossal magnetoresistance(CMR) compounds, like the Mn-perovskites, in its crystal structure andelectronic properties, indicating the possibility of different mechanisms forCMR being present.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[378.0, 1997, 'using', 8]

Tl2Mn2O7
###Towards an understanding of CMR pyrochlore Tl2Mn2O7|C. I. Ventura,M. A. Gusmao,.###
(1327650, 1327655)
 We aim to contribute to the understanding ofthe properties of Tl2Mn2O7 through the study of a generic model for thecompound, including Hund and superexchange couplings as well as hybridizationeffects.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6363636363636364,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[318.0, 1997, 'using', 6]

Mn
###Towards an understanding of CMR pyrochlore Tl2Mn2O7|C. I. Ventura,M. A. Gusmao,.###
(1327745, 1327745)
 It includes two kinds of electronic orbitals, as widely believed to bepresent one, directly related to magnetism, involving localized Mn magneticmoments, and a narrow band strongly Hund-coupled to them.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[228.0, 1997, 'using', 5]

Tl2Mn2O7
###Towards an understanding of CMR pyrochlore Tl2Mn2O7|C. I. Ventura,M. A. Gusmao,.###
(1327795, 1327800)
 Also, more extendedelectronic orbitals, related to the carriers in Tl2Mn2O7, appear and hybridizewith the narrow band.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6363636363636364,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 1997, 'using', 4]

Tl2Mn2O7
###Towards an understanding of CMR pyrochlore Tl2Mn2O7|C. I. Ventura,M. A. Gusmao,.###
(1327882, 1327887)
 This generic model allows exploration ofmany of the proposals put forward by other researchers for Tl2Mn2O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6363636363636364,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 1997, 'using', 2]

As
###Towards an understanding of CMR pyrochlore Tl2Mn2O7|C. I. Ventura,M. A. Gusmao,.###
(1327890, 1327890)
 As a firstapproach to the problem, we study the phase diagram and electronic structureemploying simplifications, for sets of parameters including previoussuggestions for the compound.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 1997, 'using', 1]

Tl2Mn2O7
###Towards an understanding of CMR pyrochlore Tl2Mn2O7|C. I. Ventura,M. A. Gusmao,.###
(1327985, 1327990)
 Furthermore, we are able to exhibit similaritieswith results obtained in 1997 using an intermediate valence model for Tl2Mn2O7,in particular, for the electronic structure in the ferromagnetic phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6363636363636364,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 1997, 'using', 0]

In
###On the Role of Exchange Interaction in Magnetic Ordering and Conductivity of Manganites|M. V. Krasinkova###
(1328450, 1328450)
 In the model, the effect of colossalmagnetoresistance is explained by a change of the conductivity mechanism onapplication of an external magnetic field, i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 3, 's', 2],[69.0, 2, 'p', 2]

Tl
###Large Thermopower in Metallic Oxides: Misfit Cobaltites and Mangano-Ruthenates|Sylvie Hebert,Christine Martin,Antoine Maignan,Raymond Fresard,Jiri Hejtmanek,Bernard Raveau###
(1328624, 1328624)
 The first one corresponds to the Tl-based misfitcobaltite which is a hole-doped metal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi
###Large Thermopower in Metallic Oxides: Misfit Cobaltites and Mangano-Ruthenates|Sylvie Hebert,Christine Martin,Antoine Maignan,Raymond Fresard,Jiri Hejtmanek,Bernard Raveau###
(1328657, 1328657)
 We demonstrate that the partialBi-substitution for Tl in this phase induces an increase of the roomtemperature (RT) thermopower (TEP) value.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tl
###Large Thermopower in Metallic Oxides: Misfit Cobaltites and Mangano-Ruthenates|Sylvie Hebert,Christine Martin,Antoine Maignan,Raymond Fresard,Jiri Hejtmanek,Bernard Raveau###
(1328663, 1328663)
 We demonstrate that the partialBi-substitution for Tl in this phase induces an increase of the roomtemperature (RT) thermopower (TEP) value.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Large Thermopower in Metallic Oxides: Misfit Cobaltites and Mangano-Ruthenates|Sylvie Hebert,Christine Martin,Antoine Maignan,Raymond Fresard,Jiri Hejtmanek,Bernard Raveau###
(1328696, 1328696)
 We demonstrate that the partialBi-substitution for Tl in this phase induces an increase of the roomtemperature (RT) thermopower (TEP) value.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pb1
###Large Thermopower in Metallic Oxides: Misfit Cobaltites and Mangano-Ruthenates|Sylvie Hebert,Christine Martin,Antoine Maignan,Raymond Fresard,Jiri Hejtmanek,Bernard Raveau###
(1328717, 1328718)
 Same result is obtained with the newPb1/3SrCoO3delta misfit corresponding to the Tl complete replacement bylead.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrCoO3
###Large Thermopower in Metallic Oxides: Misfit Cobaltites and Mangano-Ruthenates|Sylvie Hebert,Christine Martin,Antoine Maignan,Raymond Fresard,Jiri Hejtmanek,Bernard Raveau###
(1328721, 1328724)
 Same result is obtained with the newPb1/3SrCoO3delta misfit corresponding to the Tl complete replacement bylead.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tl
###Large Thermopower in Metallic Oxides: Misfit Cobaltites and Mangano-Ruthenates|Sylvie Hebert,Christine Martin,Antoine Maignan,Raymond Fresard,Jiri Hejtmanek,Bernard Raveau###
(1328735, 1328735)
 Same result is obtained with the newPb1/3SrCoO3delta misfit corresponding to the Tl complete replacement bylead.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Large Thermopower in Metallic Oxides: Misfit Cobaltites and Mangano-Ruthenates|Sylvie Hebert,Christine Martin,Antoine Maignan,Raymond Fresard,Jiri Hejtmanek,Bernard Raveau###
(1328776, 1328776)
 Simultaneously, the T<missing VAR> dependence of their resistivity exhibits are-entrance below 70-90K where a large negative magnetoresistance is observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Large Thermopower in Metallic Oxides: Misfit Cobaltites and Mangano-Ruthenates|Sylvie Hebert,Christine Martin,Antoine Maignan,Raymond Fresard,Jiri Hejtmanek,Bernard Raveau###
(1328860, 1328860)
 In particular, theRu4/5 substitution for Mn in the CaMnO3 semi-conductor induces a drasticdrop of the resistivity values.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ru4
###Large Thermopower in Metallic Oxides: Misfit Cobaltites and Mangano-Ruthenates|Sylvie Hebert,Christine Martin,Antoine Maignan,Raymond Fresard,Jiri Hejtmanek,Bernard Raveau###
(1328868, 1328869)
 In particular, theRu4/5 substitution for Mn in the CaMnO3 semi-conductor induces a drasticdrop of the resistivity values.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Large Thermopower in Metallic Oxides: Misfit Cobaltites and Mangano-Ruthenates|Sylvie Hebert,Christine Martin,Antoine Maignan,Raymond Fresard,Jiri Hejtmanek,Bernard Raveau###
(1328877, 1328877)
 In particular, theRu4/5 substitution for Mn in the CaMnO3 semi-conductor induces a drasticdrop of the resistivity values.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CaMnO3
###Large Thermopower in Metallic Oxides: Misfit Cobaltites and Mangano-Ruthenates|Sylvie Hebert,Christine Martin,Antoine Maignan,Raymond Fresard,Jiri Hejtmanek,Bernard Raveau###
(1328883, 1328886)
 In particular, theRu4/5 substitution for Mn in the CaMnO3 semi-conductor induces a drasticdrop of the resistivity values.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Large Thermopower in Metallic Oxides: Misfit Cobaltites and Mangano-Ruthenates|Sylvie Hebert,Christine Martin,Antoine Maignan,Raymond Fresard,Jiri Hejtmanek,Bernard Raveau###
(1328921, 1328921)
 Metals with large RT TEP values and not toolarge thermal conductivities are generated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Te3
###Large Thermopower in Metallic Oxides: Misfit Cobaltites and Mangano-Ruthenates|Sylvie Hebert,Christine Martin,Antoine Maignan,Raymond Fresard,Jiri Hejtmanek,Bernard Raveau###
(1328957, 1328960)
 A comparison with best knownmaterials, Bi2Te3 and NaCo2O4 is made.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NaCo2O4
###Large Thermopower in Metallic Oxides: Misfit Cobaltites and Mangano-Ruthenates|Sylvie Hebert,Christine Martin,Antoine Maignan,Raymond Fresard,Jiri Hejtmanek,Bernard Raveau###
(1328964, 1328968)
 A comparison with best knownmaterials, Bi2Te3 and NaCo2O4 is made.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Multi-patch model for transport properties of cuprate superconductors|A. Perali,M. Sindel,G. Kotliar###
(1329237, 1329237)
 A solution of the Boltzmann equation in thecase of N patches is obtained and an expression for the distribution functionaway from equilibrium is given.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Multi-patch model for transport properties of cuprate superconductors|A. Perali,M. Sindel,G. Kotliar###
(1329375, 1329375)
 In the case ofBi-based cuprates, using ARPES data for the electronic structure, and assumingan inter-patch scattering between hot and cold states with a linear temperaturedependence, a reasonable agreement with the available experiments is obtained.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi
###Multi-patch model for transport properties of cuprate superconductors|A. Perali,M. Sindel,G. Kotliar###
(1329384, 1329384)
 In the case ofBi-based cuprates, using ARPES data for the electronic structure, and assumingan inter-patch scattering between hot and cold states with a linear temperaturedependence, a reasonable agreement with the available experiments is obtained.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Multi-patch model for transport properties of cuprate superconductors|A. Perali,M. Sindel,G. Kotliar###
(1329397, 1329397)
 In the case ofBi-based cuprates, using ARPES data for the electronic structure, and assumingan inter-patch scattering between hot and cold states with a linear temperaturedependence, a reasonable agreement with the available experiments is obtained.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Spin-dependent electrical transport in ion-beam sputter deposited Fe-Cr multilayers|A. K. Majumdar,A. F. Hebard,Avinash Singh,D. Temple###
(1329490, 1329490)
Spin-dependent electrical transport in ion-beam sputter deposited Fe-Cr multilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 5, 'and', 2],[58.0, 300, 'K', 2],[159.0, 3, 'd', 2],[427.0, 2, 'and', 6]

Cr
###Spin-dependent electrical transport in ion-beam sputter deposited Fe-Cr multilayers|A. K. Majumdar,A. F. Hebard,Avinash Singh,D. Temple###
(1329492, 1329492)
Spin-dependent electrical transport in ion-beam sputter deposited Fe-Cr multilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 5, 'and', 2],[56.0, 300, 'K', 2],[157.0, 3, 'd', 2],[425.0, 2, 'and', 6]

Xe
###Spin-dependent electrical transport in ion-beam sputter deposited Fe-Cr multilayers|A. K. Majumdar,A. F. Hebard,Avinash Singh,D. Temple###
(1329518, 1329518)
 The temperature dependence of the electrical resistivity andmagnetoresistance of Xe-ion beam sputtered Fe-Cr multilayers has beeninvestigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 5, 'and', 1],[30.0, 300, 'K', 1],[131.0, 3, 'd', 1],[399.0, 2, 'and', 5]

Fe
###Spin-dependent electrical transport in ion-beam sputter deposited Fe-Cr multilayers|A. K. Majumdar,A. F. Hebard,Avinash Singh,D. Temple###
(1329526, 1329526)
 The temperature dependence of the electrical resistivity andmagnetoresistance of Xe-ion beam sputtered Fe-Cr multilayers has beeninvestigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 5, 'and', 1],[22.0, 300, 'K', 1],[123.0, 3, 'd', 1],[391.0, 2, 'and', 5]

Cr
###Spin-dependent electrical transport in ion-beam sputter deposited Fe-Cr multilayers|A. K. Majumdar,A. F. Hebard,Avinash Singh,D. Temple###
(1329528, 1329528)
 The temperature dependence of the electrical resistivity andmagnetoresistance of Xe-ion beam sputtered Fe-Cr multilayers has beeninvestigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 5, 'and', 1],[20.0, 300, 'K', 1],[121.0, 3, 'd', 1],[389.0, 2, 'and', 5]

H
###Spin-dependent electrical transport in ion-beam sputter deposited Fe-Cr multilayers|A. K. Majumdar,A. F. Hebard,Avinash Singh,D. Temple###
(1329582, 1329582)
 The electrical resistivity between 5 and 300 K in the fullyferromagnetic state, obtained by applying a field beyond the saturation field(Hsat) necessary for the antiferromagnetic(AF)-ferromagnetic(FM) field-inducedtransition, shows evidence of spin-disorder resistivity as in crystalline Feand an s-d scattering contribution (as in 3d metals and alloys).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 5, 'and', 0],[34.0, 300, 'K', 0],[67.0, 3, 'd', 0],[335.0, 2, 'and', 4]

F
###Spin-dependent electrical transport in ion-beam sputter deposited Fe-Cr multilayers|A. K. Majumdar,A. F. Hebard,Avinash Singh,D. Temple###
(1329595, 1329595)
 The electrical resistivity between 5 and 300 K in the fullyferromagnetic state, obtained by applying a field beyond the saturation field(Hsat) necessary for the antiferromagnetic(AF)-ferromagnetic(FM) field-inducedtransition, shows evidence of spin-disorder resistivity as in crystalline Feand an s-d scattering contribution (as in 3d metals and alloys).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 5, 'and', 0],[47.0, 300, 'K', 0],[54.0, 3, 'd', 0],[322.0, 2, 'and', 4]

F
###Spin-dependent electrical transport in ion-beam sputter deposited Fe-Cr multilayers|A. K. Majumdar,A. F. Hebard,Avinash Singh,D. Temple###
(1329600, 1329600)
 The electrical resistivity between 5 and 300 K in the fullyferromagnetic state, obtained by applying a field beyond the saturation field(Hsat) necessary for the antiferromagnetic(AF)-ferromagnetic(FM) field-inducedtransition, shows evidence of spin-disorder resistivity as in crystalline Feand an s-d scattering contribution (as in 3d metals and alloys).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 5, 'and', 0],[52.0, 300, 'K', 0],[49.0, 3, 'd', 0],[317.0, 2, 'and', 4]

Fe
###Spin-dependent electrical transport in ion-beam sputter deposited Fe-Cr multilayers|A. K. Majumdar,A. F. Hebard,Avinash Singh,D. Temple###
(1329630, 1329630)
 The electrical resistivity between 5 and 300 K in the fullyferromagnetic state, obtained by applying a field beyond the saturation field(Hsat) necessary for the antiferromagnetic(AF)-ferromagnetic(FM) field-inducedtransition, shows evidence of spin-disorder resistivity as in crystalline Feand an s-d scattering contribution (as in 3d metals and alloys).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 5, 'and', 0],[82.0, 300, 'K', 0],[19.0, 3, 'd', 0],[287.0, 2, 'and', 4]

H0
###Spin-dependent electrical transport in ion-beam sputter deposited Fe-Cr multilayers|A. K. Majumdar,A. F. Hebard,Avinash Singh,D. Temple###
(1329727, 1329728)
 The additional spin-dependentscattering Delta rho (T)  rho(T<missing VAR>,H0)AF - rho(T<missing VAR>,HHsat)FM<missing VAR> in the AFstate over a wide range of temperature is found to be proportional to thesublattice magnetization, both Delta rho(T) and m(T) reducing along with theantiferromagnetic fraction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[180.0, 5, 'and', 2],[179.0, 300, 'K', 2],[78.0, 3, 'd', 2],[189.0, 2, 'and', 2]

F
###Spin-dependent electrical transport in ion-beam sputter deposited Fe-Cr multilayers|A. K. Majumdar,A. F. Hebard,Avinash Singh,D. Temple###
(1329731, 1329731)
 The additional spin-dependentscattering Delta rho (T)  rho(T<missing VAR>,H0)AF - rho(T<missing VAR>,HHsat)FM<missing VAR> in the AFstate over a wide range of temperature is found to be proportional to thesublattice magnetization, both Delta rho(T) and m(T) reducing along with theantiferromagnetic fraction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[184.0, 5, 'and', 2],[183.0, 300, 'K', 2],[82.0, 3, 'd', 2],[186.0, 2, 'and', 2]

HH
###Spin-dependent electrical transport in ion-beam sputter deposited Fe-Cr multilayers|A. K. Majumdar,A. F. Hebard,Avinash Singh,D. Temple###
(1329739, 1329740)
 The additional spin-dependentscattering Delta rho (T)  rho(T<missing VAR>,H0)AF - rho(T<missing VAR>,HHsat)FM<missing VAR> in the AFstate over a wide range of temperature is found to be proportional to thesublattice magnetization, both Delta rho(T) and m(T) reducing along with theantiferromagnetic fraction.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[192.0, 5, 'and', 2],[191.0, 300, 'K', 2],[90.0, 3, 'd', 2],[177.0, 2, 'and', 2]

F
###Spin-dependent electrical transport in ion-beam sputter deposited Fe-Cr multilayers|A. K. Majumdar,A. F. Hebard,Avinash Singh,D. Temple###
(1329743, 1329743)
 The additional spin-dependentscattering Delta rho (T)  rho(T<missing VAR>,H0)AF - rho(T<missing VAR>,HHsat)FM<missing VAR> in the AFstate over a wide range of temperature is found to be proportional to thesublattice magnetization, both Delta rho(T) and m(T) reducing along with theantiferromagnetic fraction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[196.0, 5, 'and', 2],[195.0, 300, 'K', 2],[94.0, 3, 'd', 2],[174.0, 2, 'and', 2]

F
###Spin-dependent electrical transport in ion-beam sputter deposited Fe-Cr multilayers|A. K. Majumdar,A. F. Hebard,Avinash Singh,D. Temple###
(1329751, 1329751)
 The additional spin-dependentscattering Delta rho (T)  rho(T<missing VAR>,H0)AF - rho(T<missing VAR>,HHsat)FM<missing VAR> in the AFstate over a wide range of temperature is found to be proportional to thesublattice magnetization, both Delta rho(T) and m(T) reducing along with theantiferromagnetic fraction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[204.0, 5, 'and', 2],[203.0, 300, 'K', 2],[102.0, 3, 'd', 2],[166.0, 2, 'and', 2]

At
###Spin-dependent electrical transport in ion-beam sputter deposited Fe-Cr multilayers|A. K. Majumdar,A. F. Hebard,Avinash Singh,D. Temple###
(1329818, 1329818)
 At intermediate fields, the spin-dependent part ofthe electrical resistivity (rhos<missing VAR> (T)) fits well to the power law rhos<missing VAR> (T) b<missing VAR> - cTalpha where c<missing VAR> is a constant and b<missing VAR> and alpha are functions of H.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[271.0, 5, 'and', 3],[270.0, 300, 'K', 3],[169.0, 3, 'd', 3],[99.0, 2, 'and', 1]

H
###Spin-dependent electrical transport in ion-beam sputter deposited Fe-Cr multilayers|A. K. Majumdar,A. F. Hebard,Avinash Singh,D. Temple###
(1329904, 1329904)
 At intermediate fields, the spin-dependent part ofthe electrical resistivity (rhos<missing VAR> (T)) fits well to the power law rhos<missing VAR> (T) b<missing VAR> - cTalpha where c<missing VAR> is a constant and b<missing VAR> and alpha are functions of H.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[357.0, 5, 'and', 3],[356.0, 300, 'K', 3],[255.0, 3, 'd', 3],[13.0, 2, 'and', 1]

At
###Spin-dependent electrical transport in ion-beam sputter deposited Fe-Cr multilayers|A. K. Majumdar,A. F. Hebard,Avinash Singh,D. Temple###
(1329907, 1329907)
 At lowfields alpha approx 2 and the intercept b<missing VAR> decreases with H much the same wayas the decrease of Delta rho (T) with T<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[360.0, 5, 'and', 4],[359.0, 300, 'K', 4],[258.0, 3, 'd', 4],[10.0, 2, 'and', 0]

H
###Spin-dependent electrical transport in ion-beam sputter deposited Fe-Cr multilayers|A. K. Majumdar,A. F. Hebard,Avinash Singh,D. Temple###
(1329929, 1329929)
 At lowfields alpha approx 2 and the intercept b<missing VAR> decreases with H much the same wayas the decrease of Delta rho (T) with T<missing VAR>.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[382.0, 5, 'and', 4],[381.0, 300, 'K', 4],[280.0, 3, 'd', 4],[12.0, 2, 'and', 0]

H
###Spin-dependent electrical transport in ion-beam sputter deposited Fe-Cr multilayers|A. K. Majumdar,A. F. Hebard,Avinash Singh,D. Temple###
(1329973, 1329973)
 Hsat) isobtained for the field- induced AF to FM<missing VAR> transition.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[426.0, 5, 'and', 6],[425.0, 300, 'K', 6],[324.0, 3, 'd', 6],[56.0, 2, 'and', 2]

F
###Spin-dependent electrical transport in ion-beam sputter deposited Fe-Cr multilayers|A. K. Majumdar,A. F. Hebard,Avinash Singh,D. Temple###
(1329992, 1329992)
 Hsat) isobtained for the field- induced AF to FM<missing VAR> transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[445.0, 5, 'and', 6],[444.0, 300, 'K', 6],[343.0, 3, 'd', 6],[75.0, 2, 'and', 2]

F
###Spin-dependent electrical transport in ion-beam sputter deposited Fe-Cr multilayers|A. K. Majumdar,A. F. Hebard,Avinash Singh,D. Temple###
(1329996, 1329996)
 Hsat) isobtained for the field- induced AF to FM<missing VAR> transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[449.0, 5, 'and', 6],[448.0, 300, 'K', 6],[347.0, 3, 'd', 6],[79.0, 2, 'and', 2]

Fe
###Spin-dependent electrical transport in ion-beam sputter deposited Fe-Cr multilayers|A. K. Majumdar,A. F. Hebard,Avinash Singh,D. Temple###
(1330048, 1330048)
 Comparisons are madebetween the present investigation and similar studies using dc magnetronsputtered and molecular beam epitaxy (MBE) grown Fe-Cr multilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[501.0, 5, 'and', 7],[500.0, 300, 'K', 7],[399.0, 3, 'd', 7],[131.0, 2, 'and', 3]

Cr
###Spin-dependent electrical transport in ion-beam sputter deposited Fe-Cr multilayers|A. K. Majumdar,A. F. Hebard,Avinash Singh,D. Temple###
(1330050, 1330050)
 Comparisons are madebetween the present investigation and similar studies using dc magnetronsputtered and molecular beam epitaxy (MBE) grown Fe-Cr multilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[503.0, 5, 'and', 7],[502.0, 300, 'K', 7],[401.0, 3, 'd', 7],[133.0, 2, 'and', 3]

S
###Atomic-scale images of charge ordering in a mixed-valence manganite|Ch. Renner,G. Aeppli,B-G. Kim,Yeong-Ah Soh,S. -W. Cheong###
(1330393, 1330393)
 Ourscanning tunneling microscopy (STM) data show that charge order is correlatedwith structural order, as well as with whether the material is locally metallicor insulating, thus giving an atomic-scale basis for descriptions of themanganites as mixtures of electronically and structurally distinct phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###Nernst coefficient and Magnetoresistance in High-Tc Superconductors|Hiroshi Kontani###
(1330506, 1330506)
Nernst coefficient and Magnetoresistance in High-Tc Superconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Nernst coefficient and Magnetoresistance in High-Tc Superconductors|Hiroshi Kontani###
(1330511, 1330511)
 In hole-doped high-Tc cuprates, the Nernst coefficient (nu) as well as themagnetoresistance (Deltarho/rho) increase drastically below the pseudo-gaptemperature, T<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###Nernst coefficient and Magnetoresistance in High-Tc Superconductors|Hiroshi Kontani###
(1330519, 1330519)
 In hole-doped high-Tc cuprates, the Nernst coefficient (nu) as well as themagnetoresistance (Deltarho/rho) increase drastically below the pseudo-gaptemperature, T<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###Nernst coefficient and Magnetoresistance in High-Tc Superconductors|Hiroshi Kontani###
(1330634, 1330634)
 This unexpected result attracts much attention in that itreflects the fundamental feature of the electronic state in the pseudo-gapregion, which has been a central issue on high-Tc cuprates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Nernst coefficient and Magnetoresistance in High-Tc Superconductors|Hiroshi Kontani###
(1330639, 1330639)
 In this letter, westudy these transport phenomena in terms of the fluctuation-exchange(FLEX)T<missing VAR>-matrix approximation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Nernst coefficient and Magnetoresistance in High-Tc Superconductors|Hiroshi Kontani###
(1330671, 1330671)
 In this letter, westudy these transport phenomena in terms of the fluctuation-exchange(FLEX)T<missing VAR>-matrix approximation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Nernst coefficient and Magnetoresistance in High-Tc Superconductors|Hiroshi Kontani###
(1330683, 1330683)
 In this present theory, the d<missing VAR>-wavesuperconducting (SC) fluctuations, which are mediated by antiferromagnetic (AF)correlations, become dominant below T<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(SC)
###Nernst coefficient and Magnetoresistance in High-Tc Superconductors|Hiroshi Kontani###
(1330701, 1330704)
 In this present theory, the d<missing VAR>-wavesuperconducting (SC) fluctuations, which are mediated by antiferromagnetic (AF)correlations, become dominant below T<missing VAR>.
Featurization successful!
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Nernst coefficient and Magnetoresistance in High-Tc Superconductors|Hiroshi Kontani###
(1330721, 1330721)
 In this present theory, the d<missing VAR>-wavesuperconducting (SC) fluctuations, which are mediated by antiferromagnetic (AF)correlations, become dominant below T<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Nernst coefficient and Magnetoresistance in High-Tc Superconductors|Hiroshi Kontani###
(1330793, 1330793)
 As a result, the mysteriousbehaviors of nu and Deltarho/rho, which are the key phenomena in thepseudo-gap region, are naturally explained as the reflection of the enhancementof the SC fluctuation, without assuming thermally excited vortices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SC
###Nernst coefficient and Magnetoresistance in High-Tc Superconductors|Hiroshi Kontani###
(1330864, 1330865)
 As a result, the mysteriousbehaviors of nu and Deltarho/rho, which are the key phenomena in thepseudo-gap region, are naturally explained as the reflection of the enhancementof the SC fluctuation, without assuming thermally excited vortices.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###Nernst coefficient and Magnetoresistance in High-Tc Superconductors|Hiroshi Kontani###
(1330904, 1330904)
 The presentresult suggests that the pseudo-gap region in high-Tc cuprates is welldescribed in terms of the Fermi liquid with AF and SC fluctuations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Nernst coefficient and Magnetoresistance in High-Tc Superconductors|Hiroshi Kontani###
(1330930, 1330930)
 The presentresult suggests that the pseudo-gap region in high-Tc cuprates is welldescribed in terms of the Fermi liquid with AF and SC fluctuations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SC
###Nernst coefficient and Magnetoresistance in High-Tc Superconductors|Hiroshi Kontani###
(1330934, 1330935)
 The presentresult suggests that the pseudo-gap region in high-Tc cuprates is welldescribed in terms of the Fermi liquid with AF and SC fluctuations.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pr0.5
###Hole-doping dependence of percolative phase separation in Pr_(0.5-delta)Ca_(0.2+delta)Sr_(0.3)MnO_(3) around half doping|Dario G. Niebieskikwiat,Rodolfo D. Sanchez,Liliana Morales,Boris Maiorov###
(1331019, 1331020)
 We address the problem of the percolative phase separation in polycrystallinesamples of Pr0.5-deltaCa0.2deltaSr0.3MnO3 for -0.04leqdelta leq 0.04 (hole doping n<missing VAR> between 0.46 and 0.54).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 0.46, 'and', 0],[281.0, 15.5, '%', 5]

Ca0.2
###Hole-doping dependence of percolative phase separation in Pr_(0.5-delta)Ca_(0.2+delta)Sr_(0.3)MnO_(3) around half doping|Dario G. Niebieskikwiat,Rodolfo D. Sanchez,Liliana Morales,Boris Maiorov###
(1331023, 1331024)
 We address the problem of the percolative phase separation in polycrystallinesamples of Pr0.5-deltaCa0.2deltaSr0.3MnO3 for -0.04leqdelta leq 0.04 (hole doping n<missing VAR> between 0.46 and 0.54).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 0.46, 'and', 0],[277.0, 15.5, '%', 5]

Sr0.3MnO3
###Hole-doping dependence of percolative phase separation in Pr_(0.5-delta)Ca_(0.2+delta)Sr_(0.3)MnO_(3) around half doping|Dario G. Niebieskikwiat,Rodolfo D. Sanchez,Liliana Morales,Boris Maiorov###
(1331026, 1331030)
 We address the problem of the percolative phase separation in polycrystallinesamples of Pr0.5-deltaCa0.2deltaSr0.3MnO3 for -0.04leqdelta leq 0.04 (hole doping n<missing VAR> between 0.46 and 0.54).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6976744186046512,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23255813953488372,0,0,0,0,0,0,0,0,0,0,0,0,0.06976744186046512,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 0.46, 'and', 0],[271.0, 15.5, '%', 5]

C
###Hole-doping dependence of percolative phase separation in Pr_(0.5-delta)Ca_(0.2+delta)Sr_(0.3)MnO_(3) around half doping|Dario G. Niebieskikwiat,Rodolfo D. Sanchez,Liliana Morales,Boris Maiorov###
(1331102, 1331102)
 These samples show at T<missing VAR>C a paramagnetic (PM) to ferromagnetic(FM) transition, however, we found that for n<missing VAR>>0.50 there is a coexistence ofboth of these phases below T<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 0.46, 'and', 2],[199.0, 15.5, '%', 3]

P
###Hole-doping dependence of percolative phase separation in Pr_(0.5-delta)Ca_(0.2+delta)Sr_(0.3)MnO_(3) around half doping|Dario G. Niebieskikwiat,Rodolfo D. Sanchez,Liliana Morales,Boris Maiorov###
(1331109, 1331109)
 These samples show at T<missing VAR>C a paramagnetic (PM) to ferromagnetic(FM) transition, however, we found that for n<missing VAR>>0.50 there is a coexistence ofboth of these phases below T<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 0.46, 'and', 2],[192.0, 15.5, '%', 3]

F
###Hole-doping dependence of percolative phase separation in Pr_(0.5-delta)Ca_(0.2+delta)Sr_(0.3)MnO_(3) around half doping|Dario G. Niebieskikwiat,Rodolfo D. Sanchez,Liliana Morales,Boris Maiorov###
(1331119, 1331119)
 These samples show at T<missing VAR>C a paramagnetic (PM) to ferromagnetic(FM) transition, however, we found that for n<missing VAR>>0.50 there is a coexistence ofboth of these phases below T<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 0.46, 'and', 2],[182.0, 15.5, '%', 3]

C
###Hole-doping dependence of percolative phase separation in Pr_(0.5-delta)Ca_(0.2+delta)Sr_(0.3)MnO_(3) around half doping|Dario G. Niebieskikwiat,Rodolfo D. Sanchez,Liliana Morales,Boris Maiorov###
(1331163, 1331163)
 These samples show at T<missing VAR>C a paramagnetic (PM) to ferromagnetic(FM) transition, however, we found that for n<missing VAR>>0.50 there is a coexistence ofboth of these phases below T<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 0.46, 'and', 2],[138.0, 15.5, '%', 3]

(CO)
###Hole-doping dependence of percolative phase separation in Pr_(0.5-delta)Ca_(0.2+delta)Sr_(0.3)MnO_(3) around half doping|Dario G. Niebieskikwiat,Rodolfo D. Sanchez,Liliana Morales,Boris Maiorov###
(1331181, 1331184)
 On lowering T<missing VAR> below the charge-ordering(CO) temperature T<missing VAR>CO all the samples exhibit a coexistence between the FM<missing VAR>metallic and CO (antiferromagnetic) phases.
Featurization successful!
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 0.46, 'and', 3],[117.0, 15.5, '%', 2]

CO
###Hole-doping dependence of percolative phase separation in Pr_(0.5-delta)Ca_(0.2+delta)Sr_(0.3)MnO_(3) around half doping|Dario G. Niebieskikwiat,Rodolfo D. Sanchez,Liliana Morales,Boris Maiorov###
(1331189, 1331190)
 On lowering T<missing VAR> below the charge-ordering(CO) temperature T<missing VAR>CO all the samples exhibit a coexistence between the FM<missing VAR>metallic and CO (antiferromagnetic) phases.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 0.46, 'and', 3],[111.0, 15.5, '%', 2]

F
###Hole-doping dependence of percolative phase separation in Pr_(0.5-delta)Ca_(0.2+delta)Sr_(0.3)MnO_(3) around half doping|Dario G. Niebieskikwiat,Rodolfo D. Sanchez,Liliana Morales,Boris Maiorov###
(1331208, 1331208)
 On lowering T<missing VAR> below the charge-ordering(CO) temperature T<missing VAR>CO all the samples exhibit a coexistence between the FM<missing VAR>metallic and CO (antiferromagnetic) phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 0.46, 'and', 3],[93.0, 15.5, '%', 2]

CO
###Hole-doping dependence of percolative phase separation in Pr_(0.5-delta)Ca_(0.2+delta)Sr_(0.3)MnO_(3) around half doping|Dario G. Niebieskikwiat,Rodolfo D. Sanchez,Liliana Morales,Boris Maiorov###
(1331216, 1331217)
 On lowering T<missing VAR> below the charge-ordering(CO) temperature T<missing VAR>CO all the samples exhibit a coexistence between the FM<missing VAR>metallic and CO (antiferromagnetic) phases.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 0.46, 'and', 3],[84.0, 15.5, '%', 2]

In
###Hole-doping dependence of percolative phase separation in Pr_(0.5-delta)Ca_(0.2+delta)Sr_(0.3)MnO_(3) around half doping|Dario G. Niebieskikwiat,Rodolfo D. Sanchez,Liliana Morales,Boris Maiorov###
(1331226, 1331226)
 In the whole T<missing VAR> range the FM<missing VAR> phasefraction (X) decreases with increasing n<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 0.46, 'and', 4],[75.0, 15.5, '%', 1]

F
###Hole-doping dependence of percolative phase separation in Pr_(0.5-delta)Ca_(0.2+delta)Sr_(0.3)MnO_(3) around half doping|Dario G. Niebieskikwiat,Rodolfo D. Sanchez,Liliana Morales,Boris Maiorov###
(1331238, 1331238)
 In the whole T<missing VAR> range the FM<missing VAR> phasefraction (X) decreases with increasing n<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[185.0, 0.46, 'and', 4],[63.0, 15.5, '%', 1]

C
###Hole-doping dependence of percolative phase separation in Pr_(0.5-delta)Ca_(0.2+delta)Sr_(0.3)MnO_(3) around half doping|Dario G. Niebieskikwiat,Rodolfo D. Sanchez,Liliana Morales,Boris Maiorov###
(1331298, 1331298)
 Furthermore, we show that onlyfor n<missing VAR>leq 0.50 the metallic fraction is above the critical percolationthreshold X<missing VAR>Csimeq 15.5%.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[245.0, 0.46, 'and', 5],[3.0, 15.5, '%', 0]

As
###Hole-doping dependence of percolative phase separation in Pr_(0.5-delta)Ca_(0.2+delta)Sr_(0.3)MnO_(3) around half doping|Dario G. Niebieskikwiat,Rodolfo D. Sanchez,Liliana Morales,Boris Maiorov###
(1331305, 1331305)
 As a consequence, these samples show verydifferent magnetoresistance properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[252.0, 0.46, 'and', 6],[4.0, 15.5, '%', 1]

In
###Hole-doping dependence of percolative phase separation in Pr_(0.5-delta)Ca_(0.2+delta)Sr_(0.3)MnO_(3) around half doping|Dario G. Niebieskikwiat,Rodolfo D. Sanchez,Liliana Morales,Boris Maiorov###
(1331328, 1331328)
 In addition, for n<missing VAR>leq 0.50 weobserve a percolative metal-insulator transition at TMI, and forTMI<T<TCO the insulating-like behavior generated by the enlargement ofX<missing VAR> with increasing T<missing VAR> is well described by the percolation law rho-1sigma sim (X-XC)t<missing VAR>, where t<missing VAR> is a critical exponent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[275.0, 0.46, 'and', 7],[27.0, 15.5, '%', 2]

I
###Hole-doping dependence of percolative phase separation in Pr_(0.5-delta)Ca_(0.2+delta)Sr_(0.3)MnO_(3) around half doping|Dario G. Niebieskikwiat,Rodolfo D. Sanchez,Liliana Morales,Boris Maiorov###
(1331359, 1331359)
 In addition, for n<missing VAR>leq 0.50 weobserve a percolative metal-insulator transition at TMI, and forTMI<T<TCO the insulating-like behavior generated by the enlargement ofX<missing VAR> with increasing T<missing VAR> is well described by the percolation law rho-1sigma sim (X-XC)t<missing VAR>, where t<missing VAR> is a critical exponent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[306.0, 0.46, 'and', 7],[58.0, 15.5, '%', 2]

I
###Hole-doping dependence of percolative phase separation in Pr_(0.5-delta)Ca_(0.2+delta)Sr_(0.3)MnO_(3) around half doping|Dario G. Niebieskikwiat,Rodolfo D. Sanchez,Liliana Morales,Boris Maiorov###
(1331369, 1331369)
 In addition, for n<missing VAR>leq 0.50 weobserve a percolative metal-insulator transition at TMI, and forTMI<T<TCO the insulating-like behavior generated by the enlargement ofX<missing VAR> with increasing T<missing VAR> is well described by the percolation law rho-1sigma sim (X-XC)t<missing VAR>, where t<missing VAR> is a critical exponent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[316.0, 0.46, 'and', 7],[68.0, 15.5, '%', 2]

CO
###Hole-doping dependence of percolative phase separation in Pr_(0.5-delta)Ca_(0.2+delta)Sr_(0.3)MnO_(3) around half doping|Dario G. Niebieskikwiat,Rodolfo D. Sanchez,Liliana Morales,Boris Maiorov###
(1331374, 1331375)
 In addition, for n<missing VAR>leq 0.50 weobserve a percolative metal-insulator transition at TMI, and forTMI<T<TCO the insulating-like behavior generated by the enlargement ofX<missing VAR> with increasing T<missing VAR> is well described by the percolation law rho-1sigma sim (X-XC)t<missing VAR>, where t<missing VAR> is a critical exponent.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[321.0, 0.46, 'and', 7],[73.0, 15.5, '%', 2]

C
###Hole-doping dependence of percolative phase separation in Pr_(0.5-delta)Ca_(0.2+delta)Sr_(0.3)MnO_(3) around half doping|Dario G. Niebieskikwiat,Rodolfo D. Sanchez,Liliana Morales,Boris Maiorov###
(1331431, 1331431)
 In addition, for n<missing VAR>leq 0.50 weobserve a percolative metal-insulator transition at TMI, and forTMI<T<TCO the insulating-like behavior generated by the enlargement ofX<missing VAR> with increasing T<missing VAR> is well described by the percolation law rho-1sigma sim (X-XC)t<missing VAR>, where t<missing VAR> is a critical exponent.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[378.0, 0.46, 'and', 7],[130.0, 15.5, '%', 2]

In
###Theory of spin-polarized bipolar transport in magnetic p-n junctions|Jaroslav Fabian,Igor Zutic,S. Das Sarma###
(1331637, 1331637)
In particular, the theory of spin-polarized bipolar transport in magnetic p-njunctions is formulated, generalizing the classic Shockley model.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Theory of spin-polarized bipolar transport in magnetic p-n junctions|Jaroslav Fabian,Igor Zutic,S. Das Sarma###
(1331913, 1331913)
 The carrier and spindensity and current profiles in the bulk regions are calculated and the I-Vcharacteristics of the junction are obtained.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Theory of spin-polarized bipolar transport in magnetic p-n junctions|Jaroslav Fabian,Igor Zutic,S. Das Sarma###
(1331915, 1331915)
 The carrier and spindensity and current profiles in the bulk regions are calculated and the I-Vcharacteristics of the junction are obtained.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Theory of spin-polarized bipolar transport in magnetic p-n junctions|Jaroslav Fabian,Igor Zutic,S. Das Sarma###
(1332116, 1332117)
 Implications ofthe theory for majority spin injection across the depletion layer, minorityspin pumping and spin amplification, giant magnetoresistance, spin-voltaiceffect, biasing electrode spin injection, and magnetic drift in the bulkregions are discussed in details, and illustrated using the example of a GaAsbased magnetic p-n junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin diffusion and injection in semiconductor structures: Electric field effects|Z. G. Yu,M. E. Flatte###
(1332160, 1332160)
 In semiconductor spintronic devices, the semiconductor is usually lightlydoped and nondegenerate, and moderate electric fields can dominate the carriermotion.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Spin diffusion and injection in semiconductor structures: Electric field effects|Z. G. Yu,M. E. Flatte###
(1332301, 1332301)
 Here spin injection from a ferromagnet(FM) into a nonmagnetic semiconductor (NS) is extensively studied by applyingthis spin drift-diffusion equation to several typical injection structures suchas FM<missing VAR>/NS, FM<missing VAR>/NS/FM<missing VAR>, and FM<missing VAR>/NS/NS structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(NS)
###Spin diffusion and injection in semiconductor structures: Electric field effects|Z. G. Yu,M. E. Flatte###
(1332313, 1332316)
 Here spin injection from a ferromagnet(FM) into a nonmagnetic semiconductor (NS) is extensively studied by applyingthis spin drift-diffusion equation to several typical injection structures suchas FM<missing VAR>/NS, FM<missing VAR>/NS/FM<missing VAR>, and FM<missing VAR>/NS/NS structures.
Featurization successful!
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Spin diffusion and injection in semiconductor structures: Electric field effects|Z. G. Yu,M. E. Flatte###
(1332354, 1332354)
 Here spin injection from a ferromagnet(FM) into a nonmagnetic semiconductor (NS) is extensively studied by applyingthis spin drift-diffusion equation to several typical injection structures suchas FM<missing VAR>/NS, FM<missing VAR>/NS/FM<missing VAR>, and FM<missing VAR>/NS/NS structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NS
###Spin diffusion and injection in semiconductor structures: Electric field effects|Z. G. Yu,M. E. Flatte###
(1332357, 1332358)
 Here spin injection from a ferromagnet(FM) into a nonmagnetic semiconductor (NS) is extensively studied by applyingthis spin drift-diffusion equation to several typical injection structures suchas FM<missing VAR>/NS, FM<missing VAR>/NS/FM<missing VAR>, and FM<missing VAR>/NS/NS structures.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Spin diffusion and injection in semiconductor structures: Electric field effects|Z. G. Yu,M. E. Flatte###
(1332361, 1332361)
 Here spin injection from a ferromagnet(FM) into a nonmagnetic semiconductor (NS) is extensively studied by applyingthis spin drift-diffusion equation to several typical injection structures suchas FM<missing VAR>/NS, FM<missing VAR>/NS/FM<missing VAR>, and FM<missing VAR>/NS/NS structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NS/F
###Spin diffusion and injection in semiconductor structures: Electric field effects|Z. G. Yu,M. E. Flatte###
(1332364, 1332367)
 Here spin injection from a ferromagnet(FM) into a nonmagnetic semiconductor (NS) is extensively studied by applyingthis spin drift-diffusion equation to several typical injection structures suchas FM<missing VAR>/NS, FM<missing VAR>/NS/FM<missing VAR>, and FM<missing VAR>/NS/NS structures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

F
###Spin diffusion and injection in semiconductor structures: Electric field effects|Z. G. Yu,M. E. Flatte###
(1332373, 1332373)
 Here spin injection from a ferromagnet(FM) into a nonmagnetic semiconductor (NS) is extensively studied by applyingthis spin drift-diffusion equation to several typical injection structures suchas FM<missing VAR>/NS, FM<missing VAR>/NS/FM<missing VAR>, and FM<missing VAR>/NS/NS structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NS/NS
###Spin diffusion and injection in semiconductor structures: Electric field effects|Z. G. Yu,M. E. Flatte###
(1332376, 1332380)
 Here spin injection from a ferromagnet(FM) into a nonmagnetic semiconductor (NS) is extensively studied by applyingthis spin drift-diffusion equation to several typical injection structures suchas FM<missing VAR>/NS, FM<missing VAR>/NS/FM<missing VAR>, and FM<missing VAR>/NS/NS structures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

In
###Spin diffusion and injection in semiconductor structures: Electric field effects|Z. G. Yu,M. E. Flatte###
(1332465, 1332465)
 InFM<missing VAR>/NS/FM<missing VAR> structures high electric fields destroy the symmetry between the twomagnets at low fields, where both magnets are equally important for spininjection, and spin injection becomes locally determined by the magnet fromwhich carriers flow into the semiconductor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Spin diffusion and injection in semiconductor structures: Electric field effects|Z. G. Yu,M. E. Flatte###
(1332468, 1332468)
 InFM<missing VAR>/NS/FM<missing VAR> structures high electric fields destroy the symmetry between the twomagnets at low fields, where both magnets are equally important for spininjection, and spin injection becomes locally determined by the magnet fromwhich carriers flow into the semiconductor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NS/F
###Spin diffusion and injection in semiconductor structures: Electric field effects|Z. G. Yu,M. E. Flatte###
(1332471, 1332474)
 InFM<missing VAR>/NS/FM<missing VAR> structures high electric fields destroy the symmetry between the twomagnets at low fields, where both magnets are equally important for spininjection, and spin injection becomes locally determined by the magnet fromwhich carriers flow into the semiconductor.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

(NS)
###Spin diffusion and injection in semiconductor structures: Electric field effects|Z. G. Yu,M. E. Flatte###
(1332601, 1332604)
 The field-induced spin injectionenhancement should also be insensitive to the presence of a highly dopednonmagnetic semiconductor (NS) at the FM<missing VAR> interface, thus FM<missing VAR>/NS/NSstructures should also manifest efficient spin injection at high fields.
Featurization successful!
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Spin diffusion and injection in semiconductor structures: Electric field effects|Z. G. Yu,M. E. Flatte###
(1332610, 1332610)
 The field-induced spin injectionenhancement should also be insensitive to the presence of a highly dopednonmagnetic semiconductor (NS) at the FM<missing VAR> interface, thus FM<missing VAR>/NS/NSstructures should also manifest efficient spin injection at high fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Spin diffusion and injection in semiconductor structures: Electric field effects|Z. G. Yu,M. E. Flatte###
(1332618, 1332618)
 The field-induced spin injectionenhancement should also be insensitive to the presence of a highly dopednonmagnetic semiconductor (NS) at the FM<missing VAR> interface, thus FM<missing VAR>/NS/NSstructures should also manifest efficient spin injection at high fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NS/NS
###Spin diffusion and injection in semiconductor structures: Electric field effects|Z. G. Yu,M. E. Flatte###
(1332621, 1332625)
 The field-induced spin injectionenhancement should also be insensitive to the presence of a highly dopednonmagnetic semiconductor (NS) at the FM<missing VAR> interface, thus FM<missing VAR>/NS/NSstructures should also manifest efficient spin injection at high fields.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

CeAgSb2
###Thermal Expansion and Magnetostriction Studies of a Kondo Lattice Compound: Ceagsb2|D. T. Adroja,P. C. Riedi,J. G. M. Armitage,D. Fort###
(1332735, 1332738)
 We have investigated a single crystal of CeAgSb2 using low fieldac-susceptibility, thermal expansion and magnetostriction measurements in thetemperature range 1.5K to 90K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0.5,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 1.5, 'K', 0],[35.0, 90, 'K', 0],[116.0, 3, 'K', 2],[119.0, 80, 'K', 2],[214.0, 20, 'K', 4],[242.0, 20, 'K', 4],[288.0, 20, 'K', 5],[381.0, 3, 'K', 7]

K
###Thermal Expansion and Magnetostriction Studies of a Kondo Lattice Compound: Ceagsb2|D. T. Adroja,P. C. Riedi,J. G. M. Armitage,D. Fort###
(1332794, 1332794)
 The ac-susceptibility exhibits a sharp peak at9.7K for both B//c<missing VAR> and B perp c<missing VAR> due to the magnetic ordering of the Ce moment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 1.5, 'K', 1],[21.0, 90, 'K', 1],[60.0, 3, 'K', 1],[63.0, 80, 'K', 1],[158.0, 20, 'K', 3],[186.0, 20, 'K', 3],[232.0, 20, 'K', 4],[325.0, 3, 'K', 6]

B
###Thermal Expansion and Magnetostriction Studies of a Kondo Lattice Compound: Ceagsb2|D. T. Adroja,P. C. Riedi,J. G. M. Armitage,D. Fort###
(1332800, 1332800)
 The ac-susceptibility exhibits a sharp peak at9.7K for both B//c<missing VAR> and B perp c<missing VAR> due to the magnetic ordering of the Ce moment.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 1.5, 'K', 1],[27.0, 90, 'K', 1],[54.0, 3, 'K', 1],[57.0, 80, 'K', 1],[152.0, 20, 'K', 3],[180.0, 20, 'K', 3],[226.0, 20, 'K', 4],[319.0, 3, 'K', 6]

B
###Thermal Expansion and Magnetostriction Studies of a Kondo Lattice Compound: Ceagsb2|D. T. Adroja,P. C. Riedi,J. G. M. Armitage,D. Fort###
(1332807, 1332807)
 The ac-susceptibility exhibits a sharp peak at9.7K for both B//c<missing VAR> and B perp c<missing VAR> due to the magnetic ordering of the Ce moment.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 1.5, 'K', 1],[34.0, 90, 'K', 1],[47.0, 3, 'K', 1],[50.0, 80, 'K', 1],[145.0, 20, 'K', 3],[173.0, 20, 'K', 3],[219.0, 20, 'K', 4],[312.0, 3, 'K', 6]

Ce
###Thermal Expansion and Magnetostriction Studies of a Kondo Lattice Compound: Ceagsb2|D. T. Adroja,P. C. Riedi,J. G. M. Armitage,D. Fort###
(1332827, 1332827)
 The ac-susceptibility exhibits a sharp peak at9.7K for both B//c<missing VAR> and B perp c<missing VAR> due to the magnetic ordering of the Ce moment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 1.5, 'K', 1],[54.0, 90, 'K', 1],[27.0, 3, 'K', 1],[30.0, 80, 'K', 1],[125.0, 20, 'K', 3],[153.0, 20, 'K', 3],[199.0, 20, 'K', 4],[292.0, 3, 'K', 6]

N
###Thermal Expansion and Magnetostriction Studies of a Kondo Lattice Compound: Ceagsb2|D. T. Adroja,P. C. Riedi,J. G. M. Armitage,D. Fort###
(1332939, 1332939)
 in ab-plane) exhibits a sharppeak at T<missing VAR>N followed by a broad maximum at 20K, while a sharp negative peak atT<missing VAR>N followed by a minimum at 20K has been observed for (dL/L<missing VAR> //) the c<missing VAR>direction.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 1.5, 'K', 4],[166.0, 90, 'K', 4],[85.0, 3, 'K', 2],[82.0, 80, 'K', 2],[13.0, 20, 'K', 0],[41.0, 20, 'K', 0],[87.0, 20, 'K', 1],[180.0, 3, 'K', 3]

N
###Thermal Expansion and Magnetostriction Studies of a Kondo Lattice Compound: Ceagsb2|D. T. Adroja,P. C. Riedi,J. G. M. Armitage,D. Fort###
(1332969, 1332969)
 in ab-plane) exhibits a sharppeak at T<missing VAR>N followed by a broad maximum at 20K, while a sharp negative peak atT<missing VAR>N followed by a minimum at 20K has been observed for (dL/L<missing VAR> //) the c<missing VAR>direction.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[199.0, 1.5, 'K', 4],[196.0, 90, 'K', 4],[115.0, 3, 'K', 2],[112.0, 80, 'K', 2],[17.0, 20, 'K', 0],[11.0, 20, 'K', 0],[57.0, 20, 'K', 1],[150.0, 3, 'K', 3]

Ce3
###Thermal Expansion and Magnetostriction Studies of a Kondo Lattice Compound: Ceagsb2|D. T. Adroja,P. C. Riedi,J. G. M. Armitage,D. Fort###
(1333060, 1333061)
 The observed maximum and minimum in alpha(T) at 20K have beenattributed to the crystalline field effect on the J<missing VAR>5/2 state of the Ce3 ion.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[290.0, 1.5, 'K', 5],[287.0, 90, 'K', 5],[206.0, 3, 'K', 3],[203.0, 80, 'K', 3],[108.0, 20, 'K', 1],[80.0, 20, 'K', 1],[34.0, 20, 'K', 0],[58.0, 3, 'K', 2]

B3.3
###Thermal Expansion and Magnetostriction Studies of a Kondo Lattice Compound: Ceagsb2|D. T. Adroja,P. C. Riedi,J. G. M. Armitage,D. Fort###
(1333114, 1333115)
 The ab-plane magnetostriction exhibits apeak at B3.3T<missing VAR> at 3K, which is consistent with the observed peak in themagnetoresistance measurements.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[344.0, 1.5, 'K', 7],[341.0, 90, 'K', 7],[260.0, 3, 'K', 5],[257.0, 80, 'K', 5],[162.0, 20, 'K', 3],[134.0, 20, 'K', 3],[88.0, 20, 'K', 2],[4.0, 3, 'K', 0]

CeNiSn
###Resistivity, Hall effect and Shubnikov-de Haas oscillations in CeNiSn|T. Terashima,C. Terakura,S. Uji,H. Aoki,Y. Echizen,T. Takabatake###
(1333173, 1333175)
Resistivity, Hall effect and Shubnikov-de Haas oscillations in CeNiSn.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 35, 'mK', 1],[44.0, 20, 'T', 1]

CeNiSn
###Resistivity, Hall effect and Shubnikov-de Haas oscillations in CeNiSn|T. Terashima,C. Terakura,S. Uji,H. Aoki,Y. Echizen,T. Takabatake###
(1333190, 1333192)
 The resistivity and Hall effect in CeNiSn are measured at temperatures downto 35 mK and in magnetic fields up to 20 T with the current applied along theit b<missing VAR> axis.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 35, 'mK', 0],[27.0, 20, 'T', 0]

K
###Resistivity, Hall effect and Shubnikov-de Haas oscillations in CeNiSn|T. Terashima,C. Terakura,S. Uji,H. Aoki,Y. Echizen,T. Takabatake###
(1333265, 1333265)
 The resistivity at zero field exhibits quadratic temperaturedependence below sim0.16 K with a huge coefficient of the T<missing VAR>2 term (54muOmegacm/K2).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 35, 'mK', 1],[46.0, 20, 'T', 1]

K2
###Resistivity, Hall effect and Shubnikov-de Haas oscillations in CeNiSn|T. Terashima,C. Terakura,S. Uji,H. Aoki,Y. Echizen,T. Takabatake###
(1333292, 1333293)
 The resistivity at zero field exhibits quadratic temperaturedependence below sim0.16 K with a huge coefficient of the T<missing VAR>2 term (54muOmegacm/K2).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 35, 'mK', 1],[73.0, 20, 'T', 1]

H
###Resistivity, Hall effect and Shubnikov-de Haas oscillations in CeNiSn|T. Terashima,C. Terakura,S. Uji,H. Aoki,Y. Echizen,T. Takabatake###
(1333351, 1333351)
Shubnikov-de Haas (SdH) oscillations with a frequency it F of sim100 T<missing VAR>are observed for a wide range of field directions in the it ac and it bcplanes, and the quasiparticle mass is determined to be sim10-20 it me.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 35, 'mK', 3],[132.0, 20, 'T', 3]

F
###Resistivity, Hall effect and Shubnikov-de Haas oscillations in CeNiSn|T. Terashima,C. Terakura,S. Uji,H. Aoki,Y. Echizen,T. Takabatake###
(1333364, 1333364)
Shubnikov-de Haas (SdH) oscillations with a frequency it F of sim100 T<missing VAR>are observed for a wide range of field directions in the it ac and it bcplanes, and the quasiparticle mass is determined to be sim10-20 it me.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 35, 'mK', 3],[145.0, 20, 'T', 3]

Ce
###Resistivity, Hall effect and Shubnikov-de Haas oscillations in CeNiSn|T. Terashima,C. Terakura,S. Uji,H. Aoki,Y. Echizen,T. Takabatake###
(1333459, 1333459)
The carrier density is estimated to be sim10-3 electron/Ce.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[253.0, 35, 'mK', 4],[240.0, 20, 'T', 4]

In
###Resistivity, Hall effect and Shubnikov-de Haas oscillations in CeNiSn|T. Terashima,C. Terakura,S. Uji,H. Aoki,Y. Echizen,T. Takabatake###
(1333462, 1333462)
 In a narrowrange of field directions in the it ac plane, where themagnetoresistance-dip anomaly manifests itself clearer than in other fielddirections, a higher-frequency (F300sim400textT) SdH oscillation isfound at high fields above the anomaly.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[256.0, 35, 'mK', 5],[243.0, 20, 'T', 5]

F300
###Resistivity, Hall effect and Shubnikov-de Haas oscillations in CeNiSn|T. Terashima,C. Terakura,S. Uji,H. Aoki,Y. Echizen,T. Takabatake###
(1333524, 1333525)
 In a narrowrange of field directions in the it ac plane, where themagnetoresistance-dip anomaly manifests itself clearer than in other fielddirections, a higher-frequency (F300sim400textT) SdH oscillation isfound at high fields above the anomaly.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[318.0, 35, 'mK', 5],[305.0, 20, 'T', 5]

H
###Resistivity, Hall effect and Shubnikov-de Haas oscillations in CeNiSn|T. Terashima,C. Terakura,S. Uji,H. Aoki,Y. Echizen,T. Takabatake###
(1333533, 1333533)
 In a narrowrange of field directions in the it ac plane, where themagnetoresistance-dip anomaly manifests itself clearer than in other fielddirections, a higher-frequency (F300sim400textT) SdH oscillation isfound at high fields above the anomaly.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[327.0, 35, 'mK', 5],[314.0, 20, 'T', 5]

As
###On magnetoconductivity of metallic manganite phases and heterostructures|M. Dzero,L. P. Gor'kov,V. Z. Kresin###
(1333723, 1333723)
 As for the substitutional disorder, scattering on randomJahn-Teller distortions of MnO6 octahedra is chosen.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[352.0, 1, ',', 6]

MnO6
###On magnetoconductivity of metallic manganite phases and heterostructures|M. Dzero,L. P. Gor'kov,V. Z. Kresin###
(1333749, 1333751)
 As for the substitutional disorder, scattering on randomJahn-Teller distortions of MnO6 octahedra is chosen.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[324.0, 1, ',', 6]

La0.4Sr0.6MnO3/La0.55Sr0.45MnO3
###On magnetoconductivity of metallic manganite phases and heterostructures|M. Dzero,L. P. Gor'kov,V. Z. Kresin###
(1333954, 1333968)
 We employed our results to interpret dataobtained in recent experiments on La0.4Sr0.6MnO3/La0.55Sr0.45MnO3superlattices.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[107.0, 1, ',', 1]

Sr
###On magnetoconductivity of metallic manganite phases and heterostructures|M. Dzero,L. P. Gor'kov,V. Z. Kresin###
(1334035, 1334035)
 We also briefly discuss the relative importance of thecooperative Jahn-Teller distortions, double exchange mechanism andsuper-exchange interactions for the formation of the A-phase at increasing Srconcentrations x<missing VAR>>0.45 in LSMO to suggest that the Jahn-Teller contraction ofoctahedra, c<missing VAR>/a<1, plays a prevailing role.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 1, ',', 0]

O
###On magnetoconductivity of metallic manganite phases and heterostructures|M. Dzero,L. P. Gor'kov,V. Z. Kresin###
(1334049, 1334049)
 We also briefly discuss the relative importance of thecooperative Jahn-Teller distortions, double exchange mechanism andsuper-exchange interactions for the formation of the A-phase at increasing Srconcentrations x<missing VAR>>0.45 in LSMO to suggest that the Jahn-Teller contraction ofoctahedra, c<missing VAR>/a<1, plays a prevailing role.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 1, ',', 0]

(SSH)
###Ground state properties of ferromagnetic metal/conjugated polymer interfaces|S. J. Xie,K. H. Ahn,D. L. Smith,A. R. Bishop,A. Saxena###
(1334216, 1334220)
 We use aone-dimensional nondegenerate Su-Schrieffer-Heeger (SSH) Hamiltonian todescribe the conjugated polymer and one-dimensional tight-binding models todescribe the ferromagnetic metal.
Featurization successful!
0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Ground state properties of ferromagnetic metal/conjugated polymer interfaces|S. J. Xie,K. H. Ahn,D. L. Smith,A. R. Bishop,A. Saxena###
(1334325, 1334325)
 We consider both a model for a conventionalferromagnetic metal, in which there are no explicit structural degrees offreedom, and a model for a half-metallic ferromagnetic colossalmagnetoresistance (CMR) oxide which has explicit structural degrees of freedom.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SSH
###Ground state properties of ferromagnetic metal/conjugated polymer interfaces|S. J. Xie,K. H. Ahn,D. L. Smith,A. R. Bishop,A. Saxena###
(1334465, 1334467)
 Bipolarons are the lowest energycharge state in the bulk polymer for the nondegenerate SSH model Hamiltonian.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Ground state properties of ferromagnetic metal/conjugated polymer interfaces|S. J. Xie,K. H. Ahn,D. L. Smith,A. R. Bishop,A. Saxena###
(1334475, 1334475)
As a result electrons (or holes) transferred into the bulk of the polymer formspinless bipolarons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pr0.9Sr0.1CoO2.99
###Glass component induced hysteresis/memory effect in magnetoresistance of ferromagnetic Pr0.9Sr0.1CoO2.99|V. P. S. Awana,J. Nakamura,M. Karppinen,H. Yamauchi,S. K. Malik###
(1334568, 1334574)
Glass component induced hysteresis/memory effect in magnetoresistance of ferromagnetic Pr0.9Sr0.1CoO2.99.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5991983967935872,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2004008016032064,0,0,0,0,0,0,0,0,0,0,0.02004008016032064,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18036072144288576,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 100, 'Oe', 2],[126.0, 50, 'K', 2],[168.0, 100, 'and', 3],[170.0, 10, ',', 3],[221.0, 5, 'and', 4],[222.0, 10, 'K', 4],[256.0, 50, 'K', 5],[288.0, 20, 'K', 7],[301.0, 16, '%', 7],[337.0, 5, 'K', 8],[340.0, 10, 'K', 8]

Pr0.9Sr0.1CoO2.99
###Glass component induced hysteresis/memory effect in magnetoresistance of ferromagnetic Pr0.9Sr0.1CoO2.99|V. P. S. Awana,J. Nakamura,M. Karppinen,H. Yamauchi,S. K. Malik###
(1334577, 1334583)
 Pr0.9Sr0.1CoO2.99 sample exhibits magnetoresistivity (MR) of up to 40 % at 5K with a strong hysteresis/memory effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5991983967935872,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2004008016032064,0,0,0,0,0,0,0,0,0,0,0.02004008016032064,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18036072144288576,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 100, 'Oe', 1],[117.0, 50, 'K', 1],[159.0, 100, 'and', 2],[161.0, 10, ',', 2],[212.0, 5, 'and', 3],[213.0, 10, 'K', 3],[247.0, 50, 'K', 4],[279.0, 20, 'K', 6],[292.0, 16, '%', 6],[328.0, 5, 'K', 7],[331.0, 10, 'K', 7]

K
###Glass component induced hysteresis/memory effect in magnetoresistance of ferromagnetic Pr0.9Sr0.1CoO2.99|V. P. S. Awana,J. Nakamura,M. Karppinen,H. Yamauchi,S. K. Malik###
(1334611, 1334611)
 Pr0.9Sr0.1CoO2.99 sample exhibits magnetoresistivity (MR) of up to 40 % at 5K with a strong hysteresis/memory effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 100, 'Oe', 1],[89.0, 50, 'K', 1],[131.0, 100, 'and', 2],[133.0, 10, ',', 2],[184.0, 5, 'and', 3],[185.0, 10, 'K', 3],[219.0, 50, 'K', 4],[251.0, 20, 'K', 6],[264.0, 16, '%', 6],[300.0, 5, 'K', 7],[303.0, 10, 'K', 7]

Pr0.9Sr0.1CoO2.99
###Glass component induced hysteresis/memory effect in magnetoresistance of ferromagnetic Pr0.9Sr0.1CoO2.99|V. P. S. Awana,J. Nakamura,M. Karppinen,H. Yamauchi,S. K. Malik###
(1334633, 1334639)
 Magnetisation measurements onPr0.9Sr0.1CoO2.99 in an applied field of 100 Oe show that, as temperaturedecreases, the zero-field-cooled (Z<missing VAR>FC) and field-cooled (FC) magnetisationcurves branch clearly at 50 K, and a cusp appears in the Z<missing VAR>FC branch at Tcusp 20K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5991983967935872,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2004008016032064,0,0,0,0,0,0,0,0,0,0,0.02004008016032064,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18036072144288576,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 100, 'Oe', 0],[61.0, 50, 'K', 0],[103.0, 100, 'and', 1],[105.0, 10, ',', 1],[156.0, 5, 'and', 2],[157.0, 10, 'K', 2],[191.0, 50, 'K', 3],[223.0, 20, 'K', 5],[236.0, 16, '%', 5],[272.0, 5, 'K', 6],[275.0, 10, 'K', 6]

C
###Glass component induced hysteresis/memory effect in magnetoresistance of ferromagnetic Pr0.9Sr0.1CoO2.99|V. P. S. Awana,J. Nakamura,M. Karppinen,H. Yamauchi,S. K. Malik###
(1334676, 1334676)
 Magnetisation measurements onPr0.9Sr0.1CoO2.99 in an applied field of 100 Oe show that, as temperaturedecreases, the zero-field-cooled (Z<missing VAR>FC) and field-cooled (FC) magnetisationcurves branch clearly at 50 K, and a cusp appears in the Z<missing VAR>FC branch at Tcusp 20K.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 100, 'Oe', 0],[24.0, 50, 'K', 0],[66.0, 100, 'and', 1],[68.0, 10, ',', 1],[119.0, 5, 'and', 2],[120.0, 10, 'K', 2],[154.0, 50, 'K', 3],[186.0, 20, 'K', 5],[199.0, 16, '%', 5],[235.0, 5, 'K', 6],[238.0, 10, 'K', 6]

(FC)
###Glass component induced hysteresis/memory effect in magnetoresistance of ferromagnetic Pr0.9Sr0.1CoO2.99|V. P. S. Awana,J. Nakamura,M. Karppinen,H. Yamauchi,S. K. Malik###
(1334685, 1334688)
 Magnetisation measurements onPr0.9Sr0.1CoO2.99 in an applied field of 100 Oe show that, as temperaturedecreases, the zero-field-cooled (Z<missing VAR>FC) and field-cooled (FC) magnetisationcurves branch clearly at 50 K, and a cusp appears in the Z<missing VAR>FC branch at Tcusp 20K.
Featurization successful!
0,0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 100, 'Oe', 0],[12.0, 50, 'K', 0],[54.0, 100, 'and', 1],[56.0, 10, ',', 1],[107.0, 5, 'and', 2],[108.0, 10, 'K', 2],[142.0, 50, 'K', 3],[174.0, 20, 'K', 5],[187.0, 16, '%', 5],[223.0, 5, 'K', 6],[226.0, 10, 'K', 6]

FC
###Glass component induced hysteresis/memory effect in magnetoresistance of ferromagnetic Pr0.9Sr0.1CoO2.99|V. P. S. Awana,J. Nakamura,M. Karppinen,H. Yamauchi,S. K. Malik###
(1334716, 1334717)
 Magnetisation measurements onPr0.9Sr0.1CoO2.99 in an applied field of 100 Oe show that, as temperaturedecreases, the zero-field-cooled (Z<missing VAR>FC) and field-cooled (FC) magnetisationcurves branch clearly at 50 K, and a cusp appears in the Z<missing VAR>FC branch at Tcusp 20K.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 100, 'Oe', 0],[16.0, 50, 'K', 0],[25.0, 100, 'and', 1],[27.0, 10, ',', 1],[78.0, 5, 'and', 2],[79.0, 10, 'K', 2],[113.0, 50, 'K', 3],[145.0, 20, 'K', 5],[158.0, 16, '%', 5],[194.0, 5, 'K', 6],[197.0, 10, 'K', 6]

K
###Glass component induced hysteresis/memory effect in magnetoresistance of ferromagnetic Pr0.9Sr0.1CoO2.99|V. P. S. Awana,J. Nakamura,M. Karppinen,H. Yamauchi,S. K. Malik###
(1334728, 1334728)
 Magnetisation measurements onPr0.9Sr0.1CoO2.99 in an applied field of 100 Oe show that, as temperaturedecreases, the zero-field-cooled (Z<missing VAR>FC) and field-cooled (FC) magnetisationcurves branch clearly at 50 K, and a cusp appears in the Z<missing VAR>FC branch at Tcusp 20K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 100, 'Oe', 0],[28.0, 50, 'K', 0],[14.0, 100, 'and', 1],[16.0, 10, ',', 1],[67.0, 5, 'and', 2],[68.0, 10, 'K', 2],[102.0, 50, 'K', 3],[134.0, 20, 'K', 5],[147.0, 16, '%', 5],[183.0, 5, 'K', 6],[186.0, 10, 'K', 6]

FC
###Glass component induced hysteresis/memory effect in magnetoresistance of ferromagnetic Pr0.9Sr0.1CoO2.99|V. P. S. Awana,J. Nakamura,M. Karppinen,H. Yamauchi,S. K. Malik###
(1334760, 1334761)
 Magnetisation measurements in various fields between 100 and 10,000 Oe showthat both the Z<missing VAR>FC-FC branching temperature and, Tcusp, decrease with increasingfield.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 100, 'Oe', 1],[60.0, 50, 'K', 1],[18.0, 100, 'and', 0],[16.0, 10, ',', 0],[34.0, 5, 'and', 1],[35.0, 10, 'K', 1],[69.0, 50, 'K', 2],[101.0, 20, 'K', 4],[114.0, 16, '%', 4],[150.0, 5, 'K', 5],[153.0, 10, 'K', 5]

FC
###Glass component induced hysteresis/memory effect in magnetoresistance of ferromagnetic Pr0.9Sr0.1CoO2.99|V. P. S. Awana,J. Nakamura,M. Karppinen,H. Yamauchi,S. K. Malik###
(1334763, 1334764)
 Magnetisation measurements in various fields between 100 and 10,000 Oe showthat both the Z<missing VAR>FC-FC branching temperature and, Tcusp, decrease with increasingfield.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 100, 'Oe', 1],[63.0, 50, 'K', 1],[21.0, 100, 'and', 0],[19.0, 10, ',', 0],[31.0, 5, 'and', 1],[32.0, 10, 'K', 1],[66.0, 50, 'K', 2],[98.0, 20, 'K', 4],[111.0, 16, '%', 4],[147.0, 5, 'K', 5],[150.0, 10, 'K', 5]

No
###Glass component induced hysteresis/memory effect in magnetoresistance of ferromagnetic Pr0.9Sr0.1CoO2.99|V. P. S. Awana,J. Nakamura,M. Karppinen,H. Yamauchi,S. K. Malik###
(1334812, 1334812)
 No appreciable MR is seen in this compound at 50 K,i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0
[162.0, 100, 'Oe', 3],[112.0, 50, 'K', 3],[70.0, 100, 'and', 2],[68.0, 10, ',', 2],[17.0, 5, 'and', 1],[16.0, 10, 'K', 1],[18.0, 50, 'K', 0],[50.0, 20, 'K', 2],[63.0, 16, '%', 2],[99.0, 5, 'K', 3],[102.0, 10, 'K', 3]

FC
###Glass component induced hysteresis/memory effect in magnetoresistance of ferromagnetic Pr0.9Sr0.1CoO2.99|V. P. S. Awana,J. Nakamura,M. Karppinen,H. Yamauchi,S. K. Malik###
(1334850, 1334851)
 at a temperature close to Z<missing VAR>FC-FC branching temperature.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[200.0, 100, 'Oe', 4],[150.0, 50, 'K', 4],[108.0, 100, 'and', 3],[106.0, 10, ',', 3],[55.0, 5, 'and', 2],[54.0, 10, 'K', 2],[20.0, 50, 'K', 1],[11.0, 20, 'K', 1],[24.0, 16, '%', 1],[60.0, 5, 'K', 2],[63.0, 10, 'K', 2]

FC
###Glass component induced hysteresis/memory effect in magnetoresistance of ferromagnetic Pr0.9Sr0.1CoO2.99|V. P. S. Awana,J. Nakamura,M. Karppinen,H. Yamauchi,S. K. Malik###
(1334853, 1334854)
 at a temperature close to Z<missing VAR>FC-FC branching temperature.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[203.0, 100, 'Oe', 4],[153.0, 50, 'K', 4],[111.0, 100, 'and', 3],[109.0, 10, ',', 3],[58.0, 5, 'and', 2],[57.0, 10, 'K', 2],[23.0, 50, 'K', 1],[8.0, 20, 'K', 1],[21.0, 16, '%', 1],[57.0, 5, 'K', 2],[60.0, 10, 'K', 2]

At
###Glass component induced hysteresis/memory effect in magnetoresistance of ferromagnetic Pr0.9Sr0.1CoO2.99|V. P. S. Awana,J. Nakamura,M. Karppinen,H. Yamauchi,S. K. Malik###
(1334861, 1334861)
 At 20 K, negativeMR of above 16% is observed without any hysteresis effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[211.0, 100, 'Oe', 5],[161.0, 50, 'K', 5],[119.0, 100, 'and', 4],[117.0, 10, ',', 4],[66.0, 5, 'and', 3],[65.0, 10, 'K', 3],[31.0, 50, 'K', 2],[1.0, 20, 'K', 0],[14.0, 16, '%', 0],[50.0, 5, 'K', 1],[53.0, 10, 'K', 1]

Co
###Glass component induced hysteresis/memory effect in magnetoresistance of ferromagnetic Pr0.9Sr0.1CoO2.99|V. P. S. Awana,J. Nakamura,M. Karppinen,H. Yamauchi,S. K. Malik###
(1334944, 1334944)
 at temperaturesbelow Tcusp) within the spin glass state of Co spins is responsible for bothlarge MR and the prominent hysteresis/memory effect in MR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[294.0, 100, 'Oe', 7],[244.0, 50, 'K', 7],[202.0, 100, 'and', 6],[200.0, 10, ',', 6],[149.0, 5, 'and', 5],[148.0, 10, 'K', 5],[114.0, 50, 'K', 4],[82.0, 20, 'K', 2],[69.0, 16, '%', 2],[33.0, 5, 'K', 1],[30.0, 10, 'K', 1]

In
###Theory of Manganites|Takashi Hotta,Elbio Dagotto###
(1335402, 1335402)
 In this review, the present status of theories for manganites is discussed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[328.0, 344, ',', 11]

C
###Theory of Manganites|Takashi Hotta,Elbio Dagotto###
(1335508, 1335508)
 The stability of the charge-ordered states,such as the CE<missing VAR>-state at half-doping, appears to originate, in part, in thetopology of the zigzag chains present in those states.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[222.0, 344, ',', 9]

In
###Theory of Manganites|Takashi Hotta,Elbio Dagotto###
(1335556, 1335556)
 In addition, it isargued that phase separation tendencies are notorious in realistic models forMn-oxides.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[174.0, 344, ',', 8]

Mn
###Theory of Manganites|Takashi Hotta,Elbio Dagotto###
(1335589, 1335589)
 In addition, it isargued that phase separation tendencies are notorious in realistic models forMn-oxides.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 344, ',', 8]

C
###Theory of Manganites|Takashi Hotta,Elbio Dagotto###
(1335660, 1335660)
 These inhomogeneities lead to a colossalmagnetoresistance (CMR) effect, compatible with experiments.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 344, ',', 6]

In
###Theory of Manganites|Takashi Hotta,Elbio Dagotto###
(1335766, 1335766)
 In real manganites, the tendenciestoward inhomogeneous states are notorious in CMR regimes, in excellentagreement with the theoretical description outlined here.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 344, ',', 2]

C
###Theory of Manganites|Takashi Hotta,Elbio Dagotto###
(1335790, 1335790)
 In real manganites, the tendenciestoward inhomogeneous states are notorious in CMR regimes, in excellentagreement with the theoretical description outlined here.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 344, ',', 2]

B
###Magnetoresistance of Highly Correlated Electron Liquid|V. R. Shaginyan###
(1336028, 1336028)
 Theapplication of a magnetic field B restores the common T<missing VAR>2 behavior of theresistivity.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 3, ',', 1]

(B)
###Magnetoresistance of Highly Correlated Electron Liquid|V. R. Shaginyan###
(1336067, 1336069)
 The effective mass depends on the magnetic field, M<missing VAR>(B)proptoB-2/3, being approximately independent of the temperature at T<missing VAR>leqT<missing VAR>(B)propto B4/3.
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 3, ',', 0]

B
###Magnetoresistance of Highly Correlated Electron Liquid|V. R. Shaginyan###
(1336073, 1336073)
 The effective mass depends on the magnetic field, M<missing VAR>(B)proptoB-2/3, being approximately independent of the temperature at T<missing VAR>leqT<missing VAR>(B)propto B4/3.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 3, ',', 0]

(B)
###Magnetoresistance of Highly Correlated Electron Liquid|V. R. Shaginyan###
(1336099, 1336101)
 The effective mass depends on the magnetic field, M<missing VAR>(B)proptoB-2/3, being approximately independent of the temperature at T<missing VAR>leqT<missing VAR>(B)propto B4/3.
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 3, ',', 0]

B4
###Magnetoresistance of Highly Correlated Electron Liquid|V. R. Shaginyan###
(1336104, 1336105)
 The effective mass depends on the magnetic field, M<missing VAR>(B)proptoB-2/3, being approximately independent of the temperature at T<missing VAR>leqT<missing VAR>(B)propto B4/3.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 3, ',', 0]

At
###Magnetoresistance of Highly Correlated Electron Liquid|V. R. Shaginyan###
(1336110, 1336110)
 At T<missing VAR>geq T<missing VAR>(B), the T<missing VAR>-1/2 dependence of theeffective mass is re-established.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 3, ',', 1]

(B)
###Magnetoresistance of Highly Correlated Electron Liquid|V. R. Shaginyan###
(1336116, 1336118)
 At T<missing VAR>geq T<missing VAR>(B), the T<missing VAR>-1/2 dependence of theeffective mass is re-established.
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 3, ',', 1]

B
###Magnetoresistance of Highly Correlated Electron Liquid|V. R. Shaginyan###
(1336155, 1336155)
 We demonstrate that this B-T<missing VAR> phase diagramhas a strong impact on the magnetoresistance (MR) of the highly correlatedelectron liquid.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 3, ',', 2]

B4
###Magnetoresistance of Highly Correlated Electron Liquid|V. R. Shaginyan###
(1336255, 1336256)
 The MR as a function of the temperature exhibits a transitionfrom the negative values of MR at T<missing VAR>to 0 to the positive values at T<missing VAR>proptoB4/3.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 3, ',', 3]

(B)
###Magnetoresistance of Highly Correlated Electron Liquid|V. R. Shaginyan###
(1336270, 1336272)
 Thus, at T<missing VAR>geq T<missing VAR>(B), MR as a function of the temperaturepossesses a node at T<missing VAR>propto B4/3.
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[193.0, 3, ',', 4]

B4
###Magnetoresistance of Highly Correlated Electron Liquid|V. R. Shaginyan###
(1336302, 1336303)
 Thus, at T<missing VAR>geq T<missing VAR>(B), MR as a function of the temperaturepossesses a node at T<missing VAR>propto B4/3.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[225.0, 3, ',', 4]

In
###Dephasing of Electrons in Mesoscopic Metal Wires|F. Pierre,A. B. Gougam,A. Anthore,H. Pothier,D. Esteve,Norman O. Birge###
(1336388, 1336388)
 In samples fabricated using our purest silverand gold sources, tauphi increases as T<missing VAR>-2/3 when the temperatureT<missing VAR> is reduced, as predicted by the theory of electron-electron interactions indiffusive wires.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 0.1, 'and', 1],[125.0, 1, 'K', 1],[138.0, 40, 'mK', 1]

In
###Dephasing of Electrons in Mesoscopic Metal Wires|F. Pierre,A. B. Gougam,A. Anthore,H. Pothier,D. Esteve,Norman O. Birge###
(1336463, 1336463)
 In contrast, samples made of a silver source material oflesser purity or of copper exhibit an apparent saturation of tauphistarting between 0.1 and 1 K down to our base temperature of 40 mK.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 0.1, 'and', 0],[50.0, 1, 'K', 0],[63.0, 40, 'mK', 0]

S
###Kondo-type transport through an interacting quantum dot coupled to ferromagnetic leads|Bing Dong,H. L. Cui,S. Y. Liu,X. L. Lei###
(1336895, 1336895)
Within the non-crossing approximation, we calculate the total density of states(D<missing VAR>OS), the linear conductance, and the nonlinear differential conductance forboth the parallel and the anti-parallel alignments of the spin polarizationorientation in the leads, followed by a brief discussion regarding the validityof this approach.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OS
###Kondo-type transport through an interacting quantum dot coupled to ferromagnetic leads|Bing Dong,H. L. Cui,S. Y. Liu,X. L. Lei###
(1337016, 1337017)
 Numerical calculations show that for the anti-parallelalignment, a single Kondo peak always appears in the equilibrium D<missing VAR>OS, resultingin the conventional temperature behavior in the linear conductance and thezero-bias maximum in the differential conductance.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OS
###Kondo-type transport through an interacting quantum dot coupled to ferromagnetic leads|Bing Dong,H. L. Cui,S. Y. Liu,X. L. Lei###
(1337070, 1337071)
 The strength of the D<missing VAR>OS peakis gradually suppressed with increasing polarization, due to the fact thatformation of the Kondo-correlated state is more difficult in the presence ofhigher polarization.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OS
###Kondo-type transport through an interacting quantum dot coupled to ferromagnetic leads|Bing Dong,H. L. Cui,S. Y. Liu,X. L. Lei###
(1337159, 1337160)
 On the contrary, for the parallel configuration the Kondopeak in the D<missing VAR>OS descends precipitately and splits into two peaks to form a verysteep valley between them.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OS
###Kondo-type transport through an interacting quantum dot coupled to ferromagnetic leads|Bing Dong,H. L. Cui,S. Y. Liu,X. L. Lei###
(1337280, 1337281)
 Moreover, application of a biasvoltage can split each Kondo peak into two in the nonequilibrium D<missing VAR>OS for bothconfigurations.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Disorder Effect on Spin Excitation in Double Exchange Systems|Yukitoshi Motome,Nobuo Furukawa###
(1337426, 1337426)
 Spin wave approximation is applied in the lowest order of1/S expansion.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 0, ',', 3],[140.0, 2, ',', 3]

As
###Disorder Effect on Spin Excitation in Double Exchange Systems|Yukitoshi Motome,Nobuo Furukawa###
(1337587, 1337587)
 As q<missing VAR> increases, there appears a crossover from this incoherentbehavior to the marginally coherent one in which both the linewidth and theexcitation energy are proportional to q<missing VAR>2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 0, ',', 1],[21.0, 2, ',', 1]

(FeTaN)
###Magnetic anisotropy and magnetoresistance of sputtered [(FeTaN)/(TaN)](n) multilayers|H. B. Nie,S. Y. Xu,J. Li,C. K. Ong,J. P. Wang###
(1337788, 1337792)
Magnetic anisotropy and magnetoresistance of sputtered [(FeTaN)/(TaN)](n) multilayers.
Featurization successful!
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 5, ',', 2],[94.0, 30, 'nm', 2],[121.0, 0, 'to', 2],[122.0, 6.0, 'nm', 2],[282.0, 4.0, 'nm', 3],[381.0, 90, 'degrees', 4],[394.0, 300, 'nm', 4]

(TaN)
###Magnetic anisotropy and magnetoresistance of sputtered [(FeTaN)/(TaN)](n) multilayers|H. B. Nie,S. Y. Xu,J. Li,C. K. Ong,J. P. Wang###
(1337794, 1337797)
Magnetic anisotropy and magnetoresistance of sputtered [(FeTaN)/(TaN)](n) multilayers.
Featurization successful!
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 5, ',', 2],[89.0, 30, 'nm', 2],[116.0, 0, 'to', 2],[117.0, 6.0, 'nm', 2],[277.0, 4.0, 'nm', 3],[376.0, 90, 'degrees', 4],[389.0, 300, 'nm', 4]

(FeTaN)
###Magnetic anisotropy and magnetoresistance of sputtered [(FeTaN)/(TaN)](n) multilayers|H. B. Nie,S. Y. Xu,J. Li,C. K. Ong,J. P. Wang###
(1337834, 1337838)
 We studied the in-plane magnetic anisotropy of rf (radio frequency) sputtered[(FeTaN)/(TaN)](n) multilayers synthesized on Si substrates.
Featurization successful!
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 5, ',', 1],[48.0, 30, 'nm', 1],[75.0, 0, 'to', 1],[76.0, 6.0, 'nm', 1],[236.0, 4.0, 'nm', 2],[335.0, 90, 'degrees', 3],[348.0, 300, 'nm', 3]

(TaN)
###Magnetic anisotropy and magnetoresistance of sputtered [(FeTaN)/(TaN)](n) multilayers|H. B. Nie,S. Y. Xu,J. Li,C. K. Ong,J. P. Wang###
(1337840, 1337843)
 We studied the in-plane magnetic anisotropy of rf (radio frequency) sputtered[(FeTaN)/(TaN)](n) multilayers synthesized on Si substrates.
Featurization successful!
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 5, ',', 1],[43.0, 30, 'nm', 1],[70.0, 0, 'to', 1],[71.0, 6.0, 'nm', 1],[231.0, 4.0, 'nm', 2],[330.0, 90, 'degrees', 3],[343.0, 300, 'nm', 3]

Si
###Magnetic anisotropy and magnetoresistance of sputtered [(FeTaN)/(TaN)](n) multilayers|H. B. Nie,S. Y. Xu,J. Li,C. K. Ong,J. P. Wang###
(1337855, 1337855)
 We studied the in-plane magnetic anisotropy of rf (radio frequency) sputtered[(FeTaN)/(TaN)](n) multilayers synthesized on Si substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 5, ',', 1],[31.0, 30, 'nm', 1],[58.0, 0, 'to', 1],[59.0, 6.0, 'nm', 1],[219.0, 4.0, 'nm', 2],[318.0, 90, 'degrees', 3],[331.0, 300, 'nm', 3]

In
###Magnetic anisotropy and magnetoresistance of sputtered [(FeTaN)/(TaN)](n) multilayers|H. B. Nie,S. Y. Xu,J. Li,C. K. Ong,J. P. Wang###
(1337860, 1337860)
 In the multilayerswhere n<missing VAR>5, the FeTaN thickness is fixed at 30 nm and the thickness of TaN,t<missing VAR>(TaN), is varied from 0 to 6.0 nm, we observed a clear trend that, withincreasing t<missing VAR>(TaN), the values of coercivity, grain size, and amplitude ofmaximum magnetoresistance (MR) of the samples all decrease first and thenincrease after reaching a minimum when t<missing VAR>(TaN) is around 2.0-4.0 nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 5, ',', 0],[26.0, 30, 'nm', 0],[53.0, 0, 'to', 0],[54.0, 6.0, 'nm', 0],[214.0, 4.0, 'nm', 1],[313.0, 90, 'degrees', 2],[326.0, 300, 'nm', 2]

FeTaN
###Magnetic anisotropy and magnetoresistance of sputtered [(FeTaN)/(TaN)](n) multilayers|H. B. Nie,S. Y. Xu,J. Li,C. K. Ong,J. P. Wang###
(1337875, 1337877)
 In the multilayerswhere n<missing VAR>5, the FeTaN thickness is fixed at 30 nm and the thickness of TaN,t<missing VAR>(TaN), is varied from 0 to 6.0 nm, we observed a clear trend that, withincreasing t<missing VAR>(TaN), the values of coercivity, grain size, and amplitude ofmaximum magnetoresistance (MR) of the samples all decrease first and thenincrease after reaching a minimum when t<missing VAR>(TaN) is around 2.0-4.0 nm.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 5, ',', 0],[9.0, 30, 'nm', 0],[36.0, 0, 'to', 0],[37.0, 6.0, 'nm', 0],[197.0, 4.0, 'nm', 1],[296.0, 90, 'degrees', 2],[309.0, 300, 'nm', 2]

TaN
###Magnetic anisotropy and magnetoresistance of sputtered [(FeTaN)/(TaN)](n) multilayers|H. B. Nie,S. Y. Xu,J. Li,C. K. Ong,J. P. Wang###
(1337896, 1337897)
 In the multilayerswhere n<missing VAR>5, the FeTaN thickness is fixed at 30 nm and the thickness of TaN,t<missing VAR>(TaN), is varied from 0 to 6.0 nm, we observed a clear trend that, withincreasing t<missing VAR>(TaN), the values of coercivity, grain size, and amplitude ofmaximum magnetoresistance (MR) of the samples all decrease first and thenincrease after reaching a minimum when t<missing VAR>(TaN) is around 2.0-4.0 nm.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 5, ',', 0],[10.0, 30, 'nm', 0],[16.0, 0, 'to', 0],[17.0, 6.0, 'nm', 0],[177.0, 4.0, 'nm', 1],[276.0, 90, 'degrees', 2],[289.0, 300, 'nm', 2]

(TaN)
###Magnetic anisotropy and magnetoresistance of sputtered [(FeTaN)/(TaN)](n) multilayers|H. B. Nie,S. Y. Xu,J. Li,C. K. Ong,J. P. Wang###
(1337902, 1337905)
 In the multilayerswhere n<missing VAR>5, the FeTaN thickness is fixed at 30 nm and the thickness of TaN,t<missing VAR>(TaN), is varied from 0 to 6.0 nm, we observed a clear trend that, withincreasing t<missing VAR>(TaN), the values of coercivity, grain size, and amplitude ofmaximum magnetoresistance (MR) of the samples all decrease first and thenincrease after reaching a minimum when t<missing VAR>(TaN) is around 2.0-4.0 nm.
Featurization successful!
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 5, ',', 0],[16.0, 30, 'nm', 0],[8.0, 0, 'to', 0],[9.0, 6.0, 'nm', 0],[169.0, 4.0, 'nm', 1],[268.0, 90, 'degrees', 2],[281.0, 300, 'nm', 2]

(TaN)
###Magnetic anisotropy and magnetoresistance of sputtered [(FeTaN)/(TaN)](n) multilayers|H. B. Nie,S. Y. Xu,J. Li,C. K. Ong,J. P. Wang###
(1337936, 1337939)
 In the multilayerswhere n<missing VAR>5, the FeTaN thickness is fixed at 30 nm and the thickness of TaN,t<missing VAR>(TaN), is varied from 0 to 6.0 nm, we observed a clear trend that, withincreasing t<missing VAR>(TaN), the values of coercivity, grain size, and amplitude ofmaximum magnetoresistance (MR) of the samples all decrease first and thenincrease after reaching a minimum when t<missing VAR>(TaN) is around 2.0-4.0 nm.
Featurization successful!
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 5, ',', 0],[50.0, 30, 'nm', 0],[23.0, 0, 'to', 0],[22.0, 6.0, 'nm', 0],[135.0, 4.0, 'nm', 1],[234.0, 90, 'degrees', 2],[247.0, 300, 'nm', 2]

(TaN)
###Magnetic anisotropy and magnetoresistance of sputtered [(FeTaN)/(TaN)](n) multilayers|H. B. Nie,S. Y. Xu,J. Li,C. K. Ong,J. P. Wang###
(1338002, 1338005)
 In the multilayerswhere n<missing VAR>5, the FeTaN thickness is fixed at 30 nm and the thickness of TaN,t<missing VAR>(TaN), is varied from 0 to 6.0 nm, we observed a clear trend that, withincreasing t<missing VAR>(TaN), the values of coercivity, grain size, and amplitude ofmaximum magnetoresistance (MR) of the samples all decrease first and thenincrease after reaching a minimum when t<missing VAR>(TaN) is around 2.0-4.0 nm.
Featurization successful!
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 5, ',', 0],[116.0, 30, 'nm', 0],[89.0, 0, 'to', 0],[88.0, 6.0, 'nm', 0],[69.0, 4.0, 'nm', 1],[168.0, 90, 'degrees', 2],[181.0, 300, 'nm', 2]

(TaN)
###Magnetic anisotropy and magnetoresistance of sputtered [(FeTaN)/(TaN)](n) multilayers|H. B. Nie,S. Y. Xu,J. Li,C. K. Ong,J. P. Wang###
(1338068, 1338071)
 This trendis also associated with an evolution of in-plane magnetic anisotropy, where themultilayers change from uniaxial anisotropy to biaxial at t<missing VAR>(TaN) around 4.0 nmand above.
Featurization successful!
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[198.0, 5, ',', 1],[182.0, 30, 'nm', 1],[155.0, 0, 'to', 1],[154.0, 6.0, 'nm', 1],[3.0, 4.0, 'nm', 0],[102.0, 90, 'degrees', 1],[115.0, 300, 'nm', 1]

FeTaN
###Magnetic anisotropy and magnetoresistance of sputtered [(FeTaN)/(TaN)](n) multilayers|H. B. Nie,S. Y. Xu,J. Li,C. K. Ong,J. P. Wang###
(1338103, 1338105)
 We attribute the phenomena to the interlayer coupling effect ofFeTaN films as a function of the coupling layer (TaN) thickness, rather than tothe thickness dependence observed in single-layered FeTaN films, where thedirection of easy axis switches 90degrees when the film is thicker than 300 nm.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[233.0, 5, ',', 2],[217.0, 30, 'nm', 2],[190.0, 0, 'to', 2],[189.0, 6.0, 'nm', 2],[29.0, 4.0, 'nm', 1],[68.0, 90, 'degrees', 0],[81.0, 300, 'nm', 0]

(TaN)
###Magnetic anisotropy and magnetoresistance of sputtered [(FeTaN)/(TaN)](n) multilayers|H. B. Nie,S. Y. Xu,J. Li,C. K. Ong,J. P. Wang###
(1338123, 1338126)
 We attribute the phenomena to the interlayer coupling effect ofFeTaN films as a function of the coupling layer (TaN) thickness, rather than tothe thickness dependence observed in single-layered FeTaN films, where thedirection of easy axis switches 90degrees when the film is thicker than 300 nm.
Featurization successful!
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[253.0, 5, ',', 2],[237.0, 30, 'nm', 2],[210.0, 0, 'to', 2],[209.0, 6.0, 'nm', 2],[49.0, 4.0, 'nm', 1],[47.0, 90, 'degrees', 0],[60.0, 300, 'nm', 0]

FeTaN
###Magnetic anisotropy and magnetoresistance of sputtered [(FeTaN)/(TaN)](n) multilayers|H. B. Nie,S. Y. Xu,J. Li,C. K. Ong,J. P. Wang###
(1338152, 1338154)
 We attribute the phenomena to the interlayer coupling effect ofFeTaN films as a function of the coupling layer (TaN) thickness, rather than tothe thickness dependence observed in single-layered FeTaN films, where thedirection of easy axis switches 90degrees when the film is thicker than 300 nm.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[282.0, 5, ',', 2],[266.0, 30, 'nm', 2],[239.0, 0, 'to', 2],[238.0, 6.0, 'nm', 2],[78.0, 4.0, 'nm', 1],[19.0, 90, 'degrees', 0],[32.0, 300, 'nm', 0]

(FeTaN)
###Magnetic anisotropy and magnetoresistance of sputtered [(FeTaN)/(TaN)](n) multilayers|H. B. Nie,S. Y. Xu,J. Li,C. K. Ong,J. P. Wang###
(1338203, 1338207)
The in-plane anisotropy of the [(FeTaN)/(TaN)](n) multilayers also shows signsof oscillation when the number of coupling layers varies.
Featurization successful!
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[333.0, 5, ',', 3],[317.0, 30, 'nm', 3],[290.0, 0, 'to', 3],[289.0, 6.0, 'nm', 3],[129.0, 4.0, 'nm', 2],[30.0, 90, 'degrees', 1],[17.0, 300, 'nm', 1]

(TaN)
###Magnetic anisotropy and magnetoresistance of sputtered [(FeTaN)/(TaN)](n) multilayers|H. B. Nie,S. Y. Xu,J. Li,C. K. Ong,J. P. Wang###
(1338209, 1338212)
The in-plane anisotropy of the [(FeTaN)/(TaN)](n) multilayers also shows signsof oscillation when the number of coupling layers varies.
Featurization successful!
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[339.0, 5, ',', 3],[323.0, 30, 'nm', 3],[296.0, 0, 'to', 3],[295.0, 6.0, 'nm', 3],[135.0, 4.0, 'nm', 2],[36.0, 90, 'degrees', 1],[23.0, 300, 'nm', 1]

(TaN)
###Magnetic anisotropy and magnetoresistance of sputtered [(FeTaN)/(TaN)](n) multilayers|H. B. Nie,S. Y. Xu,J. Li,C. K. Ong,J. P. Wang###
(1338324, 1338327)
 The MR effectsobserved are mainly due to anisotropy MR (AMR), while the grain size andexchange coupling may also contribute to the change of maximum MR ratios in themultilayers with changing t<missing VAR>(TaN).
Featurization successful!
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[454.0, 5, ',', 4],[438.0, 30, 'nm', 4],[411.0, 0, 'to', 4],[410.0, 6.0, 'nm', 4],[250.0, 4.0, 'nm', 3],[151.0, 90, 'degrees', 2],[138.0, 300, 'nm', 2]

CoS1.9Se0.1
###First-order transition in the itinerant ferromagnet CoS$_{1.9}$Se$_{0.1}$|T. J. Sato,J. W. Lynn,Y. S. Hor,S. -W. Cheong###
(1338352, 1338356)
First-order transition in the itinerant ferromagnet CoS1.9Se0.1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6333333333333333,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.03333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoS2
###First-order transition in the itinerant ferromagnet CoS$_{1.9}$Se$_{0.1}$|T. J. Sato,J. W. Lynn,Y. S. Hor,S. -W. Cheong###
(1338361, 1338363)
 Undoped CoS2 is an isotropic itinerant ferromagnet with a continuous ornearly continuous phase transition at T<missing VAR>rm C  122 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###First-order transition in the itinerant ferromagnet CoS$_{1.9}$Se$_{0.1}$|T. J. Sato,J. W. Lynn,Y. S. Hor,S. -W. Cheong###
(1338397, 1338397)
 Undoped CoS2 is an isotropic itinerant ferromagnet with a continuous ornearly continuous phase transition at T<missing VAR>rm C  122 K.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###First-order transition in the itinerant ferromagnet CoS$_{1.9}$Se$_{0.1}$|T. J. Sato,J. W. Lynn,Y. S. Hor,S. -W. Cheong###
(1338402, 1338402)
 Undoped CoS2 is an isotropic itinerant ferromagnet with a continuous ornearly continuous phase transition at T<missing VAR>rm C  122 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###First-order transition in the itinerant ferromagnet CoS$_{1.9}$Se$_{0.1}$|T. J. Sato,J. W. Lynn,Y. S. Hor,S. -W. Cheong###
(1338405, 1338405)
 In the dopedCoS1.9Se0.1 system, the Curie temperature is lowered to T<missing VAR>rm C 90 K, and the transition becomes clearly first order in nature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoS1.9Se0.1
###First-order transition in the itinerant ferromagnet CoS$_{1.9}$Se$_{0.1}$|T. J. Sato,J. W. Lynn,Y. S. Hor,S. -W. Cheong###
(1338412, 1338416)
 In the dopedCoS1.9Se0.1 system, the Curie temperature is lowered to T<missing VAR>rm C 90 K, and the transition becomes clearly first order in nature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6333333333333333,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.03333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###First-order transition in the itinerant ferromagnet CoS$_{1.9}$Se$_{0.1}$|T. J. Sato,J. W. Lynn,Y. S. Hor,S. -W. Cheong###
(1338436, 1338436)
 In the dopedCoS1.9Se0.1 system, the Curie temperature is lowered to T<missing VAR>rm C 90 K, and the transition becomes clearly first order in nature.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###First-order transition in the itinerant ferromagnet CoS$_{1.9}$Se$_{0.1}$|T. J. Sato,J. W. Lynn,Y. S. Hor,S. -W. Cheong###
(1338442, 1338442)
 In the dopedCoS1.9Se0.1 system, the Curie temperature is lowered to T<missing VAR>rm C 90 K, and the transition becomes clearly first order in nature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###First-order transition in the itinerant ferromagnet CoS$_{1.9}$Se$_{0.1}$|T. J. Sato,J. W. Lynn,Y. S. Hor,S. -W. Cheong###
(1338464, 1338464)
 In particularwe find a discontinuous evolution of the spin dynamics as well as strong timerelaxation in the ferromagnetic Bragg intensity and small angle neutronscattering in vicinity of the ferromagnetic transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###First-order transition in the itinerant ferromagnet CoS$_{1.9}$Se$_{0.1}$|T. J. Sato,J. W. Lynn,Y. S. Hor,S. -W. Cheong###
(1338534, 1338534)
 In the ordered statethe long-wavelength spin excitations were found to be conventionalferromagnetic spin-waves with negligible spin-wave gap ( < 0.04 meV),indicating that this system is also an excellent isotropic (soft) ferromagnet.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###First-order transition in the itinerant ferromagnet CoS$_{1.9}$Se$_{0.1}$|T. J. Sato,J. W. Lynn,Y. S. Hor,S. -W. Cheong###
(1338587, 1338587)
 In the ordered statethe long-wavelength spin excitations were found to be conventionalferromagnetic spin-waves with negligible spin-wave gap ( < 0.04 meV),indicating that this system is also an excellent isotropic (soft) ferromagnet.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###First-order transition in the itinerant ferromagnet CoS$_{1.9}$Se$_{0.1}$|T. J. Sato,J. W. Lynn,Y. S. Hor,S. -W. Cheong###
(1338618, 1338618)
In a wide temperature range up to 0.9T<missing VAR>rm C, the spin-wave stiffnessD(T) follows the prediction of the two-magnon interaction theory, D(T) D<missing VAR>(0)(1 - AT<missing VAR>5/2), with D<missing VAR>(0)  131.7 pm 2.8 meV-AA2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###First-order transition in the itinerant ferromagnet CoS$_{1.9}$Se$_{0.1}$|T. J. Sato,J. W. Lynn,Y. S. Hor,S. -W. Cheong###
(1338636, 1338636)
In a wide temperature range up to 0.9T<missing VAR>rm C, the spin-wave stiffnessD(T) follows the prediction of the two-magnon interaction theory, D(T) D<missing VAR>(0)(1 - AT<missing VAR>5/2), with D<missing VAR>(0)  131.7 pm 2.8 meV-AA2.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###First-order transition in the itinerant ferromagnet CoS$_{1.9}$Se$_{0.1}$|T. J. Sato,J. W. Lynn,Y. S. Hor,S. -W. Cheong###
(1338711, 1338711)
In a wide temperature range up to 0.9T<missing VAR>rm C, the spin-wave stiffnessD(T) follows the prediction of the two-magnon interaction theory, D(T) D<missing VAR>(0)(1 - AT<missing VAR>5/2), with D<missing VAR>(0)  131.7 pm 2.8 meV-AA2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###First-order transition in the itinerant ferromagnet CoS$_{1.9}$Se$_{0.1}$|T. J. Sato,J. W. Lynn,Y. S. Hor,S. -W. Cheong###
(1338742, 1338742)
 The stiffness,however, does not collapse as T<missing VAR> to T<missing VAR>rm C from below.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La
###First-order transition in the itinerant ferromagnet CoS$_{1.9}$Se$_{0.1}$|T. J. Sato,J. W. Lynn,Y. S. Hor,S. -W. Cheong###
(1338800, 1338800)
 Instead aquasielastic central peak abruptly develops in the excitation spectrum, quitesimilar to results found in the colossal magnetoresistance oxides such as(La-Ca)MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ca
###First-order transition in the itinerant ferromagnet CoS$_{1.9}$Se$_{0.1}$|T. J. Sato,J. W. Lynn,Y. S. Hor,S. -W. Cheong###
(1338802, 1338802)
 Instead aquasielastic central peak abruptly develops in the excitation spectrum, quitesimilar to results found in the colossal magnetoresistance oxides such as(La-Ca)MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnO3
###First-order transition in the itinerant ferromagnet CoS$_{1.9}$Se$_{0.1}$|T. J. Sato,J. W. Lynn,Y. S. Hor,S. -W. Cheong###
(1338804, 1338806)
 Instead aquasielastic central peak abruptly develops in the excitation spectrum, quitesimilar to results found in the colossal magnetoresistance oxides such as(La-Ca)MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V2
###Quantum rate equations for electron transport through an interacting system in the sequential tunneling regime|Bing Dong,H. L. Cui,X. L. Lei###
(1338963, 1338964)
 The assumption that only leading order of V2 (V is thetunneling coupling between the interacting central region and the leads) hasbeen taken into account in deriving these equations implies that the quantumrate equations are only valid in the case of weak coupling between the centralregion and the leads.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Quantum rate equations for electron transport through an interacting system in the sequential tunneling regime|Bing Dong,H. L. Cui,X. L. Lei###
(1338967, 1338967)
 The assumption that only leading order of V2 (V is thetunneling coupling between the interacting central region and the leads) hasbeen taken into account in deriving these equations implies that the quantumrate equations are only valid in the case of weak coupling between the centralregion and the leads.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Quantum rate equations for electron transport through an interacting system in the sequential tunneling regime|Bing Dong,H. L. Cui,X. L. Lei###
(1339097, 1339097)
 For demonstrations, we consider two special cases in thecentral region, a single interacting quantum dot (SQD) with weak spin-flipscattering and a weakly coupled double quantum dots (CQD), as examples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Quantum rate equations for electron transport through an interacting system in the sequential tunneling regime|Bing Dong,H. L. Cui,X. L. Lei###
(1339128, 1339128)
 For demonstrations, we consider two special cases in thecentral region, a single interacting quantum dot (SQD) with weak spin-flipscattering and a weakly coupled double quantum dots (CQD), as examples.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Quantum rate equations for electron transport through an interacting system in the sequential tunneling regime|Bing Dong,H. L. Cui,X. L. Lei###
(1339139, 1339139)
 In thelimit of zero temperature and large bias voltage, the resulting equations areidentical to the previous results derived from the many-body Schrodingerequation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Quantum rate equations for electron transport through an interacting system in the sequential tunneling regime|Bing Dong,H. L. Cui,X. L. Lei###
(1339239, 1339239)
 The numerical simulations reveal 1) the dependence of the spin-flipscattering on the temperature and bias voltage in the SQD; and 2) the possiblenegative differential conductance and negative tunnel magnetoresistance in theCQD, depending on the hopping between the two quantum dots.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Quantum rate equations for electron transport through an interacting system in the sequential tunneling regime|Bing Dong,H. L. Cui,X. L. Lei###
(1339273, 1339273)
 The numerical simulations reveal 1) the dependence of the spin-flipscattering on the temperature and bias voltage in the SQD; and 2) the possiblenegative differential conductance and negative tunnel magnetoresistance in theCQD, depending on the hopping between the two quantum dots.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Re1-x
###Theory of Manganites Exhibiting Colossal Magnetoresistance|T. V. Ramakrishnan,H. R. Krishnamurthy,S. R. Hassan,G. Venketeswara Pai###
(1339407, 1339410)
 Arecent example, subsequent to that of cuprate superconductors, is of rare earthmanganites doped with alkaline earths, namely Re1-xAx<missing VAR> MnO3, whichexhibit colossal magnetoresistance, metal insulator transition and many otherpoorly understood phenomena.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

MnO3
###Theory of Manganites Exhibiting Colossal Magnetoresistance|T. V. Ramakrishnan,H. R. Krishnamurthy,S. R. Hassan,G. Venketeswara Pai###
(1339414, 1339416)
 Arecent example, subsequent to that of cuprate superconductors, is of rare earthmanganites doped with alkaline earths, namely Re1-xAx<missing VAR> MnO3, whichexhibit colossal magnetoresistance, metal insulator transition and many otherpoorly understood phenomena.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Theory of Manganites Exhibiting Colossal Magnetoresistance|T. V. Ramakrishnan,H. R. Krishnamurthy,S. R. Hassan,G. Venketeswara Pai###
(1339505, 1339505)
 Here we show that the strong Jahn Teller couplingbetween the twofold degenerate (dx2 -y<missing VAR>2 and d3z2 -r<missing VAR>2) egorbitals of Mn and lattice modes of vibration (of the oxygen octahedrasurrounding the Mn ions) dynamically reorganizes the former into a set ofstates (which we label ell) which are localized with large local latticedistortion and exponentially small intersite overlap, and another set (labelledb) which form a broad band.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Theory of Manganites Exhibiting Colossal Magnetoresistance|T. V. Ramakrishnan,H. R. Krishnamurthy,S. R. Hassan,G. Venketeswara Pai###
(1339531, 1339531)
 Here we show that the strong Jahn Teller couplingbetween the twofold degenerate (dx2 -y<missing VAR>2 and d3z2 -r<missing VAR>2) egorbitals of Mn and lattice modes of vibration (of the oxygen octahedrasurrounding the Mn ions) dynamically reorganizes the former into a set ofstates (which we label ell) which are localized with large local latticedistortion and exponentially small intersite overlap, and another set (labelledb) which form a broad band.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

U
###Theory of Manganites Exhibiting Colossal Magnetoresistance|T. V. Ramakrishnan,H. R. Krishnamurthy,S. R. Hassan,G. Venketeswara Pai###
(1339683, 1339683)
 This hitherto unsuspected but microscopicallyinevitable coexistence of radically different ell and b<missing VAR> states, andtheir relative energies and occupation as influenced by doping x<missing VAR>, temperatureT<missing VAR>, local Coulomb repulsion U etc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Ultrafast collective dynamics of short-range charge/orbital ordering fluctuations in colossal magnetoresistive oxides|Y. H. Ren,Y. F. Hu,Qi Li,C. S. Hong,N. H. Hur,G. L\U{fc}pke###
(1339852, 1339852)
 The colossal magnetoresistive (CMR) manganites are highly correlatedsystems with a strong coupling between spin, charge, orbital, and latticedegrees of freedom, which leads to complex phase diagrams and to thecoexistence of various forms of ordering.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(CO)
###Ultrafast collective dynamics of short-range charge/orbital ordering fluctuations in colossal magnetoresistive oxides|Y. H. Ren,Y. F. Hu,Qi Li,C. S. Hong,N. H. Hur,G. L\U{fc}pke###
(1339945, 1339948)
 For example, nanoscale charge/orbitalordering (CO) fluctuations appear to cooperate with Jahn-Teller (JT)distortions of the MnO6 octahedra in CMR manganites and compete with theelectron itinerancy favored by double exchange.
Featurization successful!
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnO6
###Ultrafast collective dynamics of short-range charge/orbital ordering fluctuations in colossal magnetoresistive oxides|Y. H. Ren,Y. F. Hu,Qi Li,C. S. Hong,N. H. Hur,G. L\U{fc}pke###
(1339976, 1339978)
 For example, nanoscale charge/orbitalordering (CO) fluctuations appear to cooperate with Jahn-Teller (JT)distortions of the MnO6 octahedra in CMR manganites and compete with theelectron itinerancy favored by double exchange.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Ultrafast collective dynamics of short-range charge/orbital ordering fluctuations in colossal magnetoresistive oxides|Y. H. Ren,Y. F. Hu,Qi Li,C. S. Hong,N. H. Hur,G. L\U{fc}pke###
(1339984, 1339984)
 For example, nanoscale charge/orbitalordering (CO) fluctuations appear to cooperate with Jahn-Teller (JT)distortions of the MnO6 octahedra in CMR manganites and compete with theelectron itinerancy favored by double exchange.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CO
###Ultrafast collective dynamics of short-range charge/orbital ordering fluctuations in colossal magnetoresistive oxides|Y. H. Ren,Y. F. Hu,Qi Li,C. S. Hong,N. H. Hur,G. L\U{fc}pke###
(1340095, 1340096)
 Here, we report on astrongly damped low-energy collective mode originating from fast short-range COfluctuations in La0.67Ca0.33MnO3(LCMO) single crystal and thinfilms.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O3
###Ultrafast collective dynamics of short-range charge/orbital ordering fluctuations in colossal magnetoresistive oxides|Y. H. Ren,Y. F. Hu,Qi Li,C. S. Hong,N. H. Hur,G. L\U{fc}pke###
(1340108, 1340109)
 Here, we report on astrongly damped low-energy collective mode originating from fast short-range COfluctuations in La0.67Ca0.33MnO3(LCMO) single crystal and thinfilms.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Ultrafast collective dynamics of short-range charge/orbital ordering fluctuations in colossal magnetoresistive oxides|Y. H. Ren,Y. F. Hu,Qi Li,C. S. Hong,N. H. Hur,G. L\U{fc}pke###
(1340114, 1340114)
 Here, we report on astrongly damped low-energy collective mode originating from fast short-range COfluctuations in La0.67Ca0.33MnO3(LCMO) single crystal and thinfilms.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CO
###Ultrafast collective dynamics of short-range charge/orbital ordering fluctuations in colossal magnetoresistive oxides|Y. H. Ren,Y. F. Hu,Qi Li,C. S. Hong,N. H. Hur,G. L\U{fc}pke###
(1340205, 1340206)
Our results show for the first time that dynamical short-range CO correlationsin CMR manganites can be detected with high momentum resolution by coherentultrafast optical techniques.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Ultrafast collective dynamics of short-range charge/orbital ordering fluctuations in colossal magnetoresistive oxides|Y. H. Ren,Y. F. Hu,Qi Li,C. S. Hong,N. H. Hur,G. L\U{fc}pke###
(1340213, 1340213)
Our results show for the first time that dynamical short-range CO correlationsin CMR manganites can be detected with high momentum resolution by coherentultrafast optical techniques.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FC
###Universal Behavior of Heavy-Fermion Metals Near a Quantum Critical Point|V. R. Shaginyan###
(1340371, 1340372)
We show that there exist at least two main types of the behavior when thesystem is nearby a quantum critical point which can be identified as thefermion condensation quantum phase transition (FCQPT).
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FC
###Universal Behavior of Heavy-Fermion Metals Near a Quantum Critical Point|V. R. Shaginyan###
(1340456, 1340457)
 If the system approaches FCQPT from the disordered phase, it canbe viewed as a highly correlated Fermi-liquid which at low temperaturesexhibits the behavior of Landau Fermi liquid (LFL).
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Universal Behavior of Heavy-Fermion Metals Near a Quantum Critical Point|V. R. Shaginyan###
(1340522, 1340522)
 At higher temperatures T<missing VAR>,it demonstrates the non-Fermi liquid (NFL) behavior which can be converted intothe LFL behavior by the application of magnetic fields B.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NF
###Universal Behavior of Heavy-Fermion Metals Near a Quantum Critical Point|V. R. Shaginyan###
(1340545, 1340546)
 At higher temperatures T<missing VAR>,it demonstrates the non-Fermi liquid (NFL) behavior which can be converted intothe LFL behavior by the application of magnetic fields B.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Universal Behavior of Heavy-Fermion Metals Near a Quantum Critical Point|V. R. Shaginyan###
(1340583, 1340583)
 At higher temperatures T<missing VAR>,it demonstrates the non-Fermi liquid (NFL) behavior which can be converted intothe LFL behavior by the application of magnetic fields B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FC
###Universal Behavior of Heavy-Fermion Metals Near a Quantum Critical Point|V. R. Shaginyan###
(1340597, 1340598)
 If the system hasundergone FCQPT, it can be considered as a strongly correlated Fermi-liquidwhich demonstrates the NFL<missing VAR> behavior even at low temperatures.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NF
###Universal Behavior of Heavy-Fermion Metals Near a Quantum Critical Point|V. R. Shaginyan###
(1340631, 1340632)
 If the system hasundergone FCQPT, it can be considered as a strongly correlated Fermi-liquidwhich demonstrates the NFL<missing VAR> behavior even at low temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Universal Behavior of Heavy-Fermion Metals Near a Quantum Critical Point|V. R. Shaginyan###
(1340669, 1340669)
 It can be turnedinto LFL by applying magnetic fields B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Universal Behavior of Heavy-Fermion Metals Near a Quantum Critical Point|V. R. Shaginyan###
(1340701, 1340701)
 We show that the effective mass M<missing VAR>diverges at the very point that the Neel temperature goes to zero.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Universal Behavior of Heavy-Fermion Metals Near a Quantum Critical Point|V. R. Shaginyan###
(1340715, 1340715)
 The B-T<missing VAR>phase diagrams of both liquids are studied.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Universal Behavior of Heavy-Fermion Metals Near a Quantum Critical Point|V. R. Shaginyan###
(1340743, 1340743)
 We demonstrate that these B-T<missing VAR>phase diagrams have a strong impact on the main properties of heavy-fermionmetals such as the magnetoresistance, resistivity, specific heat,magnetization, volume thermal expansion, etc.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###High magnetic field induced charge density wave states in a quasi-one dimensional organic conductor|D. Graf,E. S. Choi,J. S. Brooks,Rui T. Henriques,M. Almeida,M. Matos###
(1340889, 1340889)
 We have measured the high field magnetoresistence and magnetization ofquasi-one- dimensional (Q1D) organic conductor (Per)2Pt(mnt)2 (where Per perylene and mnt  maleonitriledithiolate), which has a charge density wave(CD<missing VAR>W) ground state at zero magnetic field below 8 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 8, 'K', 0],[91.0, 20, 'T', 1],[136.0, 265, ',', 4],[187.0, 20, 'to', 5],[188.0, 50, 'T', 5],[317.0, 50, 'T', 6],[483.0, 53, ',', 14],[489.0, 1240, ';', 14],[507.0, 78, ',', 16]

C
###High magnetic field induced charge density wave states in a quasi-one dimensional organic conductor|D. Graf,E. S. Choi,J. S. Brooks,Rui T. Henriques,M. Almeida,M. Matos###
(1340927, 1340927)
 We have measured the high field magnetoresistence and magnetization ofquasi-one- dimensional (Q1D) organic conductor (Per)2Pt(mnt)2 (where Per perylene and mnt  maleonitriledithiolate), which has a charge density wave(CD<missing VAR>W) ground state at zero magnetic field below 8 K.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 8, 'K', 0],[53.0, 20, 'T', 1],[98.0, 265, ',', 4],[149.0, 20, 'to', 5],[150.0, 50, 'T', 5],[279.0, 50, 'T', 6],[445.0, 53, ',', 14],[451.0, 1240, ';', 14],[469.0, 78, ',', 16]

W
###High magnetic field induced charge density wave states in a quasi-one dimensional organic conductor|D. Graf,E. S. Choi,J. S. Brooks,Rui T. Henriques,M. Almeida,M. Matos###
(1340929, 1340929)
 We have measured the high field magnetoresistence and magnetization ofquasi-one- dimensional (Q1D) organic conductor (Per)2Pt(mnt)2 (where Per perylene and mnt  maleonitriledithiolate), which has a charge density wave(CD<missing VAR>W) ground state at zero magnetic field below 8 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 8, 'K', 0],[51.0, 20, 'T', 1],[96.0, 265, ',', 4],[147.0, 20, 'to', 5],[148.0, 50, 'T', 5],[277.0, 50, 'T', 6],[443.0, 53, ',', 14],[449.0, 1240, ';', 14],[467.0, 78, ',', 16]

C
###High magnetic field induced charge density wave states in a quasi-one dimensional organic conductor|D. Graf,E. S. Choi,J. S. Brooks,Rui T. Henriques,M. Almeida,M. Matos###
(1340956, 1340956)
 We find that the CD<missing VAR>Wground state is suppressed with moderate magnetic fields of order 20 T, asexpected from a mean field theory treatment of Pauli effects[W.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 8, 'K', 1],[24.0, 20, 'T', 0],[69.0, 265, ',', 3],[120.0, 20, 'to', 4],[121.0, 50, 'T', 4],[250.0, 50, 'T', 5],[416.0, 53, ',', 13],[422.0, 1240, ';', 13],[440.0, 78, ',', 15]

W
###High magnetic field induced charge density wave states in a quasi-one dimensional organic conductor|D. Graf,E. S. Choi,J. S. Brooks,Rui T. Henriques,M. Almeida,M. Matos###
(1340958, 1340958)
 We find that the CD<missing VAR>Wground state is suppressed with moderate magnetic fields of order 20 T, asexpected from a mean field theory treatment of Pauli effects[W.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 8, 'K', 1],[22.0, 20, 'T', 0],[67.0, 265, ',', 3],[118.0, 20, 'to', 4],[119.0, 50, 'T', 4],[248.0, 50, 'T', 5],[414.0, 53, ',', 13],[420.0, 1240, ';', 13],[438.0, 78, ',', 15]

W
###High magnetic field induced charge density wave states in a quasi-one dimensional organic conductor|D. Graf,E. S. Choi,J. S. Brooks,Rui T. Henriques,M. Almeida,M. Matos###
(1341006, 1341006)
 We find that the CD<missing VAR>Wground state is suppressed with moderate magnetic fields of order 20 T, asexpected from a mean field theory treatment of Pauli effects[W.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 8, 'K', 1],[26.0, 20, 'T', 0],[19.0, 265, ',', 3],[70.0, 20, 'to', 4],[71.0, 50, 'T', 4],[200.0, 50, 'T', 5],[366.0, 53, ',', 13],[372.0, 1240, ';', 13],[390.0, 78, ',', 15]

P
###High magnetic field induced charge density wave states in a quasi-one dimensional organic conductor|D. Graf,E. S. Choi,J. S. Brooks,Rui T. Henriques,M. Almeida,M. Matos###
(1341014, 1341014)
 Dieterich andP.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 8, 'K', 2],[34.0, 20, 'T', 1],[11.0, 265, ',', 2],[62.0, 20, 'to', 3],[63.0, 50, 'T', 3],[192.0, 50, 'T', 4],[358.0, 53, ',', 12],[364.0, 1240, ';', 12],[382.0, 78, ',', 14]

At
###High magnetic field induced charge density wave states in a quasi-one dimensional organic conductor|D. Graf,E. S. Choi,J. S. Brooks,Rui T. Henriques,M. Almeida,M. Matos###
(1341040, 1341040)
 At higher magnetic fields, a new,density wave state with sub-phases is observed in the range 20 to 50 T, whichis reminiscent of the cascade of field induced, quantized, spin density wavephases (FISD<missing VAR>W) observed in the Bechgaard salts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 8, 'K', 5],[60.0, 20, 'T', 4],[15.0, 265, ',', 1],[36.0, 20, 'to', 0],[37.0, 50, 'T', 0],[166.0, 50, 'T', 1],[332.0, 53, ',', 9],[338.0, 1240, ';', 9],[356.0, 78, ',', 11]

FIS
###High magnetic field induced charge density wave states in a quasi-one dimensional organic conductor|D. Graf,E. S. Choi,J. S. Brooks,Rui T. Henriques,M. Almeida,M. Matos###
(1341113, 1341115)
 At higher magnetic fields, a new,density wave state with sub-phases is observed in the range 20 to 50 T, whichis reminiscent of the cascade of field induced, quantized, spin density wavephases (FISD<missing VAR>W) observed in the Bechgaard salts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[168.0, 8, 'K', 5],[133.0, 20, 'T', 4],[88.0, 265, ',', 1],[37.0, 20, 'to', 0],[36.0, 50, 'T', 0],[91.0, 50, 'T', 1],[257.0, 53, ',', 9],[263.0, 1240, ';', 9],[281.0, 78, ',', 11]

W
###High magnetic field induced charge density wave states in a quasi-one dimensional organic conductor|D. Graf,E. S. Choi,J. S. Brooks,Rui T. Henriques,M. Almeida,M. Matos###
(1341117, 1341117)
 At higher magnetic fields, a new,density wave state with sub-phases is observed in the range 20 to 50 T, whichis reminiscent of the cascade of field induced, quantized, spin density wavephases (FISD<missing VAR>W) observed in the Bechgaard salts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[172.0, 8, 'K', 5],[137.0, 20, 'T', 4],[92.0, 265, ',', 1],[41.0, 20, 'to', 0],[40.0, 50, 'T', 0],[89.0, 50, 'T', 1],[255.0, 53, ',', 9],[261.0, 1240, ';', 9],[279.0, 78, ',', 11]

FIC
###High magnetic field induced charge density wave states in a quasi-one dimensional organic conductor|D. Graf,E. S. Choi,J. S. Brooks,Rui T. Henriques,M. Almeida,M. Matos###
(1341169, 1341171)
 The new density wave state,which we tenatively identify as a field induced charge density wave state(FICD<missing VAR>W), is re-entrant to a low resistance state at even higher fields, oforder 50 T and above.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[224.0, 8, 'K', 6],[189.0, 20, 'T', 5],[144.0, 265, ',', 2],[93.0, 20, 'to', 1],[92.0, 50, 'T', 1],[35.0, 50, 'T', 0],[201.0, 53, ',', 8],[207.0, 1240, ';', 8],[225.0, 78, ',', 10]

W
###High magnetic field induced charge density wave states in a quasi-one dimensional organic conductor|D. Graf,E. S. Choi,J. S. Brooks,Rui T. Henriques,M. Almeida,M. Matos###
(1341173, 1341173)
 The new density wave state,which we tenatively identify as a field induced charge density wave state(FICD<missing VAR>W), is re-entrant to a low resistance state at even higher fields, oforder 50 T and above.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[228.0, 8, 'K', 6],[193.0, 20, 'T', 5],[148.0, 265, ',', 2],[97.0, 20, 'to', 1],[96.0, 50, 'T', 1],[33.0, 50, 'T', 0],[199.0, 53, ',', 8],[205.0, 1240, ';', 8],[223.0, 78, ',', 10]

FIS
###High magnetic field induced charge density wave states in a quasi-one dimensional organic conductor|D. Graf,E. S. Choi,J. S. Brooks,Rui T. Henriques,M. Almeida,M. Matos###
(1341217, 1341219)
 Unlike the FISD<missing VAR>W ground state, the FICD<missing VAR>W state is onlyweakly orbital, and appears for all directions of magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[272.0, 8, 'K', 7],[237.0, 20, 'T', 6],[192.0, 265, ',', 3],[141.0, 20, 'to', 2],[140.0, 50, 'T', 2],[11.0, 50, 'T', 1],[153.0, 53, ',', 7],[159.0, 1240, ';', 7],[177.0, 78, ',', 9]

W
###High magnetic field induced charge density wave states in a quasi-one dimensional organic conductor|D. Graf,E. S. Choi,J. S. Brooks,Rui T. Henriques,M. Almeida,M. Matos###
(1341221, 1341221)
 Unlike the FISD<missing VAR>W ground state, the FICD<missing VAR>W state is onlyweakly orbital, and appears for all directions of magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[276.0, 8, 'K', 7],[241.0, 20, 'T', 6],[196.0, 265, ',', 3],[145.0, 20, 'to', 2],[144.0, 50, 'T', 2],[15.0, 50, 'T', 1],[151.0, 53, ',', 7],[157.0, 1240, ';', 7],[175.0, 78, ',', 9]

FIC
###High magnetic field induced charge density wave states in a quasi-one dimensional organic conductor|D. Graf,E. S. Choi,J. S. Brooks,Rui T. Henriques,M. Almeida,M. Matos###
(1341230, 1341232)
 Unlike the FISD<missing VAR>W ground state, the FICD<missing VAR>W state is onlyweakly orbital, and appears for all directions of magnetic field.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[285.0, 8, 'K', 7],[250.0, 20, 'T', 6],[205.0, 265, ',', 3],[154.0, 20, 'to', 2],[153.0, 50, 'T', 2],[24.0, 50, 'T', 1],[140.0, 53, ',', 7],[146.0, 1240, ';', 7],[164.0, 78, ',', 9]

W
###High magnetic field induced charge density wave states in a quasi-one dimensional organic conductor|D. Graf,E. S. Choi,J. S. Brooks,Rui T. Henriques,M. Almeida,M. Matos###
(1341234, 1341234)
 Unlike the FISD<missing VAR>W ground state, the FICD<missing VAR>W state is onlyweakly orbital, and appears for all directions of magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[289.0, 8, 'K', 7],[254.0, 20, 'T', 6],[209.0, 265, ',', 3],[158.0, 20, 'to', 2],[157.0, 50, 'T', 2],[28.0, 50, 'T', 1],[138.0, 53, ',', 7],[144.0, 1240, ';', 7],[162.0, 78, ',', 9]

C
###High magnetic field induced charge density wave states in a quasi-one dimensional organic conductor|D. Graf,E. S. Choi,J. S. Brooks,Rui T. Henriques,M. Almeida,M. Matos###
(1341326, 1341326)
 We discuss our results in light of theoretical workinvolving magnetic field dependent Q1D CD<missing VAR>W ground states in high magneticfields [D<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[381.0, 8, 'K', 9],[346.0, 20, 'T', 8],[301.0, 265, ',', 5],[250.0, 20, 'to', 4],[249.0, 50, 'T', 4],[120.0, 50, 'T', 3],[46.0, 53, ',', 5],[52.0, 1240, ';', 5],[70.0, 78, ',', 7]

W
###High magnetic field induced charge density wave states in a quasi-one dimensional organic conductor|D. Graf,E. S. Choi,J. S. Brooks,Rui T. Henriques,M. Almeida,M. Matos###
(1341328, 1341328)
 We discuss our results in light of theoretical workinvolving magnetic field dependent Q1D CD<missing VAR>W ground states in high magneticfields [D<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[383.0, 8, 'K', 9],[348.0, 20, 'T', 8],[303.0, 265, ',', 5],[252.0, 20, 'to', 4],[251.0, 50, 'T', 4],[122.0, 50, 'T', 3],[44.0, 53, ',', 5],[50.0, 1240, ';', 5],[68.0, 78, ',', 7]

B
###High magnetic field induced charge density wave states in a quasi-one dimensional organic conductor|D. Graf,E. S. Choi,J. S. Brooks,Rui T. Henriques,M. Almeida,M. Matos###
(1341370, 1341370)
 B 53, (1996)1240;A.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[425.0, 8, 'K', 14],[390.0, 20, 'T', 13],[345.0, 265, ',', 10],[294.0, 20, 'to', 9],[293.0, 50, 'T', 9],[164.0, 50, 'T', 8],[2.0, 53, ',', 0],[8.0, 1240, ';', 0],[26.0, 78, ',', 2]

P
###High magnetic field induced charge density wave states in a quasi-one dimensional organic conductor|D. Graf,E. S. Choi,J. S. Brooks,Rui T. Henriques,M. Almeida,M. Matos###
(1341391, 1341391)
 Lebed, JETP Lett.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[446.0, 8, 'K', 15],[411.0, 20, 'T', 14],[366.0, 265, ',', 11],[315.0, 20, 'to', 10],[314.0, 50, 'T', 10],[185.0, 50, 'T', 9],[19.0, 53, ',', 1],[13.0, 1240, ';', 1],[5.0, 78, ',', 1]

B
###New Electronic Phase Transitions in α-(BEDT-TTF)2KHg(SCN)4|M. V. Kartsovnik,D. Andres,W. Biberacher,P. D. Grigoriev,E. A. Schuberth,H. Mueller###
(1341425, 1341425)
New Electronic Phase Transitions in -(BEDT-TTF)2KHg(SCN)4.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 8, 'K', 1]

F
###New Electronic Phase Transitions in α-(BEDT-TTF)2KHg(SCN)4|M. V. Kartsovnik,D. Andres,W. Biberacher,P. D. Grigoriev,E. A. Schuberth,H. Mueller###
(1341432, 1341432)
New Electronic Phase Transitions in -(BEDT-TTF)2KHg(SCN)4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 8, 'K', 1]

KHg(SCN)4
###New Electronic Phase Transitions in α-(BEDT-TTF)2KHg(SCN)4|M. V. Kartsovnik,D. Andres,W. Biberacher,P. D. Grigoriev,E. A. Schuberth,H. Mueller###
(1341435, 1341442)
New Electronic Phase Transitions in -(BEDT-TTF)2KHg(SCN)4.
Featurization terminated normally.
0,0,0,0,0,0.2857142857142857,0.2857142857142857,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0.07142857142857142,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07142857142857142,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 8, 'K', 1]

B
###New Electronic Phase Transitions in α-(BEDT-TTF)2KHg(SCN)4|M. V. Kartsovnik,D. Andres,W. Biberacher,P. D. Grigoriev,E. A. Schuberth,H. Mueller###
(1341448, 1341448)
 alpha-(BEDT-TTF)2KHg(SCN)4 is considered to be in the charge-density-wave(CD<missing VAR>W) state below 8 K.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 8, 'K', 0]

F
###New Electronic Phase Transitions in α-(BEDT-TTF)2KHg(SCN)4|M. V. Kartsovnik,D. Andres,W. Biberacher,P. D. Grigoriev,E. A. Schuberth,H. Mueller###
(1341455, 1341455)
 alpha-(BEDT-TTF)2KHg(SCN)4 is considered to be in the charge-density-wave(CD<missing VAR>W) state below 8 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 8, 'K', 0]

KHg(SCN)4
###New Electronic Phase Transitions in α-(BEDT-TTF)2KHg(SCN)4|M. V. Kartsovnik,D. Andres,W. Biberacher,P. D. Grigoriev,E. A. Schuberth,H. Mueller###
(1341458, 1341465)
 alpha-(BEDT-TTF)2KHg(SCN)4 is considered to be in the charge-density-wave(CD<missing VAR>W) state below 8 K.
Featurization terminated normally.
0,0,0,0,0,0.2857142857142857,0.2857142857142857,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0.07142857142857142,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07142857142857142,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 8, 'K', 0]

C
###New Electronic Phase Transitions in α-(BEDT-TTF)2KHg(SCN)4|M. V. Kartsovnik,D. Andres,W. Biberacher,P. D. Grigoriev,E. A. Schuberth,H. Mueller###
(1341487, 1341487)
 alpha-(BEDT-TTF)2KHg(SCN)4 is considered to be in the charge-density-wave(CD<missing VAR>W) state below 8 K.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 8, 'K', 0]

W
###New Electronic Phase Transitions in α-(BEDT-TTF)2KHg(SCN)4|M. V. Kartsovnik,D. Andres,W. Biberacher,P. D. Grigoriev,E. A. Schuberth,H. Mueller###
(1341489, 1341489)
 alpha-(BEDT-TTF)2KHg(SCN)4 is considered to be in the charge-density-wave(CD<missing VAR>W) state below 8 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 8, 'K', 0]

C
###New Electronic Phase Transitions in α-(BEDT-TTF)2KHg(SCN)4|M. V. Kartsovnik,D. Andres,W. Biberacher,P. D. Grigoriev,E. A. Schuberth,H. Mueller###
(1341529, 1341529)
 We present new magnetoresistance data suggesting thatthe material undergoes a series of field-induced CD<missing VAR>W (FICD<missing VAR>W) transitions atpressures slightly exceeding the critical pressure Pc at which the zero-fieldCD<missing VAR>W state is destroyed.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 8, 'K', 1]

W
###New Electronic Phase Transitions in α-(BEDT-TTF)2KHg(SCN)4|M. V. Kartsovnik,D. Andres,W. Biberacher,P. D. Grigoriev,E. A. Schuberth,H. Mueller###
(1341531, 1341531)
 We present new magnetoresistance data suggesting thatthe material undergoes a series of field-induced CD<missing VAR>W (FICD<missing VAR>W) transitions atpressures slightly exceeding the critical pressure Pc at which the zero-fieldCD<missing VAR>W state is destroyed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 8, 'K', 1]

FIC
###New Electronic Phase Transitions in α-(BEDT-TTF)2KHg(SCN)4|M. V. Kartsovnik,D. Andres,W. Biberacher,P. D. Grigoriev,E. A. Schuberth,H. Mueller###
(1341534, 1341536)
 We present new magnetoresistance data suggesting thatthe material undergoes a series of field-induced CD<missing VAR>W (FICD<missing VAR>W) transitions atpressures slightly exceeding the critical pressure Pc at which the zero-fieldCD<missing VAR>W state is destroyed.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 8, 'K', 1]

W
###New Electronic Phase Transitions in α-(BEDT-TTF)2KHg(SCN)4|M. V. Kartsovnik,D. Andres,W. Biberacher,P. D. Grigoriev,E. A. Schuberth,H. Mueller###
(1341538, 1341538)
 We present new magnetoresistance data suggesting thatthe material undergoes a series of field-induced CD<missing VAR>W (FICD<missing VAR>W) transitions atpressures slightly exceeding the critical pressure Pc at which the zero-fieldCD<missing VAR>W state is destroyed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 8, 'K', 1]

C
###New Electronic Phase Transitions in α-(BEDT-TTF)2KHg(SCN)4|M. V. Kartsovnik,D. Andres,W. Biberacher,P. D. Grigoriev,E. A. Schuberth,H. Mueller###
(1341571, 1341571)
 We present new magnetoresistance data suggesting thatthe material undergoes a series of field-induced CD<missing VAR>W (FICD<missing VAR>W) transitions atpressures slightly exceeding the critical pressure Pc at which the zero-fieldCD<missing VAR>W state is destroyed.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 8, 'K', 1]

W
###New Electronic Phase Transitions in α-(BEDT-TTF)2KHg(SCN)4|M. V. Kartsovnik,D. Andres,W. Biberacher,P. D. Grigoriev,E. A. Schuberth,H. Mueller###
(1341573, 1341573)
 We present new magnetoresistance data suggesting thatthe material undergoes a series of field-induced CD<missing VAR>W (FICD<missing VAR>W) transitions atpressures slightly exceeding the critical pressure Pc at which the zero-fieldCD<missing VAR>W state is destroyed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 8, 'K', 1]

FIC
###New Electronic Phase Transitions in α-(BEDT-TTF)2KHg(SCN)4|M. V. Kartsovnik,D. Andres,W. Biberacher,P. D. Grigoriev,E. A. Schuberth,H. Mueller###
(1341599, 1341601)
 Further, we argue that a novel kind of FICD<missing VAR>Wtransitions, entirely determined by a superposition of the strong Pauli andquantizing orbital effects of magnetic field on the CD<missing VAR>W wavevector, arises whenthe field is strongly tilted towards the conducting layers.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 8, 'K', 2]

W
###New Electronic Phase Transitions in α-(BEDT-TTF)2KHg(SCN)4|M. V. Kartsovnik,D. Andres,W. Biberacher,P. D. Grigoriev,E. A. Schuberth,H. Mueller###
(1341603, 1341603)
 Further, we argue that a novel kind of FICD<missing VAR>Wtransitions, entirely determined by a superposition of the strong Pauli andquantizing orbital effects of magnetic field on the CD<missing VAR>W wavevector, arises whenthe field is strongly tilted towards the conducting layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 8, 'K', 2]

C
###New Electronic Phase Transitions in α-(BEDT-TTF)2KHg(SCN)4|M. V. Kartsovnik,D. Andres,W. Biberacher,P. D. Grigoriev,E. A. Schuberth,H. Mueller###
(1341646, 1341646)
 Further, we argue that a novel kind of FICD<missing VAR>Wtransitions, entirely determined by a superposition of the strong Pauli andquantizing orbital effects of magnetic field on the CD<missing VAR>W wavevector, arises whenthe field is strongly tilted towards the conducting layers.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 8, 'K', 2]

W
###New Electronic Phase Transitions in α-(BEDT-TTF)2KHg(SCN)4|M. V. Kartsovnik,D. Andres,W. Biberacher,P. D. Grigoriev,E. A. Schuberth,H. Mueller###
(1341648, 1341648)
 Further, we argue that a novel kind of FICD<missing VAR>Wtransitions, entirely determined by a superposition of the strong Pauli andquantizing orbital effects of magnetic field on the CD<missing VAR>W wavevector, arises whenthe field is strongly tilted towards the conducting layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 8, 'K', 2]

(SC)
###New Electronic Phase Transitions in α-(BEDT-TTF)2KHg(SCN)4|M. V. Kartsovnik,D. Andres,W. Biberacher,P. D. Grigoriev,E. A. Schuberth,H. Mueller###
(1341726, 1341729)
 Finally we report on the superconducting (SC) state and itscoexistence with the CD<missing VAR>W in the title compound under quasi-hydrostaticpressure.
Featurization successful!
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[231.0, 8, 'K', 4]

C
###New Electronic Phase Transitions in α-(BEDT-TTF)2KHg(SCN)4|M. V. Kartsovnik,D. Andres,W. Biberacher,P. D. Grigoriev,E. A. Schuberth,H. Mueller###
(1341744, 1341744)
 Finally we report on the superconducting (SC) state and itscoexistence with the CD<missing VAR>W in the title compound under quasi-hydrostaticpressure.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[249.0, 8, 'K', 4]

W
###New Electronic Phase Transitions in α-(BEDT-TTF)2KHg(SCN)4|M. V. Kartsovnik,D. Andres,W. Biberacher,P. D. Grigoriev,E. A. Schuberth,H. Mueller###
(1341746, 1341746)
 Finally we report on the superconducting (SC) state and itscoexistence with the CD<missing VAR>W in the title compound under quasi-hydrostaticpressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[251.0, 8, 'K', 4]

SC/C
###New Electronic Phase Transitions in α-(BEDT-TTF)2KHg(SCN)4|M. V. Kartsovnik,D. Andres,W. Biberacher,P. D. Grigoriev,E. A. Schuberth,H. Mueller###
(1341784, 1341787)
 Below Pc the material is most likely a heterogeneous SC/CD<missing VAR>W mixture,with the SC phase persisting down to ambient pressure.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[289.0, 8, 'K', 5]

W
###New Electronic Phase Transitions in α-(BEDT-TTF)2KHg(SCN)4|M. V. Kartsovnik,D. Andres,W. Biberacher,P. D. Grigoriev,E. A. Schuberth,H. Mueller###
(1341789, 1341789)
 Below Pc the material is most likely a heterogeneous SC/CD<missing VAR>W mixture,with the SC phase persisting down to ambient pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[294.0, 8, 'K', 5]

SC
###New Electronic Phase Transitions in α-(BEDT-TTF)2KHg(SCN)4|M. V. Kartsovnik,D. Andres,W. Biberacher,P. D. Grigoriev,E. A. Schuberth,H. Mueller###
(1341799, 1341800)
 Below Pc the material is most likely a heterogeneous SC/CD<missing VAR>W mixture,with the SC phase persisting down to ambient pressure.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[304.0, 8, 'K', 5]

SC
###New Electronic Phase Transitions in α-(BEDT-TTF)2KHg(SCN)4|M. V. Kartsovnik,D. Andres,W. Biberacher,P. D. Grigoriev,E. A. Schuberth,H. Mueller###
(1341817, 1341818)
 The SC onset temperatureappears to drastically increase upon entering the SC/CD<missing VAR>W coexistence region.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[322.0, 8, 'K', 6]

SC/C
###New Electronic Phase Transitions in α-(BEDT-TTF)2KHg(SCN)4|M. V. Kartsovnik,D. Andres,W. Biberacher,P. D. Grigoriev,E. A. Schuberth,H. Mueller###
(1341839, 1341842)
 The SC onset temperatureappears to drastically increase upon entering the SC/CD<missing VAR>W coexistence region.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[344.0, 8, 'K', 6]

W
###New Electronic Phase Transitions in α-(BEDT-TTF)2KHg(SCN)4|M. V. Kartsovnik,D. Andres,W. Biberacher,P. D. Grigoriev,E. A. Schuberth,H. Mueller###
(1341844, 1341844)
 The SC onset temperatureappears to drastically increase upon entering the SC/CD<missing VAR>W coexistence region.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[349.0, 8, 'K', 6]

CuAs2
###Magnetic and transport anomalies in the compounds, RCuAs2 (R= Pr, Nd, Sm, Gd, Tb, Dy, Ho, and Er)|Kausik Sengupta,S. Rayaprol,E. V. Sampathkumaran,Th. Doert,J. P. F. Jemetio###
(1341875, 1341877)
Magnetic and transport anomalies in the compounds, R<missing VAR>CuAs2 (R<missing VAR> Pr, Nd, Sm, Gd, Tb, Dy, Ho, and Er).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[343.0, 50, 'K', 4],[419.0, 20, 'to', 5],[420.0, 30, 'K', 5]

Pr
###Magnetic and transport anomalies in the compounds, RCuAs2 (R= Pr, Nd, Sm, Gd, Tb, Dy, Ho, and Er)|Kausik Sengupta,S. Rayaprol,E. V. Sampathkumaran,Th. Doert,J. P. F. Jemetio###
(1341882, 1341882)
Magnetic and transport anomalies in the compounds, R<missing VAR>CuAs2 (R<missing VAR> Pr, Nd, Sm, Gd, Tb, Dy, Ho, and Er).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[338.0, 50, 'K', 4],[414.0, 20, 'to', 5],[415.0, 30, 'K', 5]

Nd
###Magnetic and transport anomalies in the compounds, RCuAs2 (R= Pr, Nd, Sm, Gd, Tb, Dy, Ho, and Er)|Kausik Sengupta,S. Rayaprol,E. V. Sampathkumaran,Th. Doert,J. P. F. Jemetio###
(1341885, 1341885)
Magnetic and transport anomalies in the compounds, R<missing VAR>CuAs2 (R<missing VAR> Pr, Nd, Sm, Gd, Tb, Dy, Ho, and Er).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[335.0, 50, 'K', 4],[411.0, 20, 'to', 5],[412.0, 30, 'K', 5]

Sm
###Magnetic and transport anomalies in the compounds, RCuAs2 (R= Pr, Nd, Sm, Gd, Tb, Dy, Ho, and Er)|Kausik Sengupta,S. Rayaprol,E. V. Sampathkumaran,Th. Doert,J. P. F. Jemetio###
(1341888, 1341888)
Magnetic and transport anomalies in the compounds, R<missing VAR>CuAs2 (R<missing VAR> Pr, Nd, Sm, Gd, Tb, Dy, Ho, and Er).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[332.0, 50, 'K', 4],[408.0, 20, 'to', 5],[409.0, 30, 'K', 5]

Gd
###Magnetic and transport anomalies in the compounds, RCuAs2 (R= Pr, Nd, Sm, Gd, Tb, Dy, Ho, and Er)|Kausik Sengupta,S. Rayaprol,E. V. Sampathkumaran,Th. Doert,J. P. F. Jemetio###
(1341891, 1341891)
Magnetic and transport anomalies in the compounds, R<missing VAR>CuAs2 (R<missing VAR> Pr, Nd, Sm, Gd, Tb, Dy, Ho, and Er).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[329.0, 50, 'K', 4],[405.0, 20, 'to', 5],[406.0, 30, 'K', 5]

Tb
###Magnetic and transport anomalies in the compounds, RCuAs2 (R= Pr, Nd, Sm, Gd, Tb, Dy, Ho, and Er)|Kausik Sengupta,S. Rayaprol,E. V. Sampathkumaran,Th. Doert,J. P. F. Jemetio###
(1341894, 1341894)
Magnetic and transport anomalies in the compounds, R<missing VAR>CuAs2 (R<missing VAR> Pr, Nd, Sm, Gd, Tb, Dy, Ho, and Er).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[326.0, 50, 'K', 4],[402.0, 20, 'to', 5],[403.0, 30, 'K', 5]

Dy
###Magnetic and transport anomalies in the compounds, RCuAs2 (R= Pr, Nd, Sm, Gd, Tb, Dy, Ho, and Er)|Kausik Sengupta,S. Rayaprol,E. V. Sampathkumaran,Th. Doert,J. P. F. Jemetio###
(1341897, 1341897)
Magnetic and transport anomalies in the compounds, R<missing VAR>CuAs2 (R<missing VAR> Pr, Nd, Sm, Gd, Tb, Dy, Ho, and Er).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[323.0, 50, 'K', 4],[399.0, 20, 'to', 5],[400.0, 30, 'K', 5]

Ho
###Magnetic and transport anomalies in the compounds, RCuAs2 (R= Pr, Nd, Sm, Gd, Tb, Dy, Ho, and Er)|Kausik Sengupta,S. Rayaprol,E. V. Sampathkumaran,Th. Doert,J. P. F. Jemetio###
(1341900, 1341900)
Magnetic and transport anomalies in the compounds, R<missing VAR>CuAs2 (R<missing VAR> Pr, Nd, Sm, Gd, Tb, Dy, Ho, and Er).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[320.0, 50, 'K', 4],[396.0, 20, 'to', 5],[397.0, 30, 'K', 5]

Er
###Magnetic and transport anomalies in the compounds, RCuAs2 (R= Pr, Nd, Sm, Gd, Tb, Dy, Ho, and Er)|Kausik Sengupta,S. Rayaprol,E. V. Sampathkumaran,Th. Doert,J. P. F. Jemetio###
(1341905, 1341905)
Magnetic and transport anomalies in the compounds, R<missing VAR>CuAs2 (R<missing VAR> Pr, Nd, Sm, Gd, Tb, Dy, Ho, and Er).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[315.0, 50, 'K', 4],[391.0, 20, 'to', 5],[392.0, 30, 'K', 5]

CuAs2
###Magnetic and transport anomalies in the compounds, RCuAs2 (R= Pr, Nd, Sm, Gd, Tb, Dy, Ho, and Er)|Kausik Sengupta,S. Rayaprol,E. V. Sampathkumaran,Th. Doert,J. P. F. Jemetio###
(1341957, 1341959)
 The results of dc magnetization, heat capacity, electrical resistivity (rho)and magnetoresistance measurements are reported in detail for the compounds,R<missing VAR>CuAs2 for R<missing VAR> Pr, Nd, Sm, Gd, Tb, Dy, Ho, and Er, crystallizing in HfCuSi2-typetetragonal structure, with the aim of bringing out anomalies among normal(that is, other than Ce and Yb) rare-earths.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[261.0, 50, 'K', 3],[337.0, 20, 'to', 4],[338.0, 30, 'K', 4]

Pr
###Magnetic and transport anomalies in the compounds, RCuAs2 (R= Pr, Nd, Sm, Gd, Tb, Dy, Ho, and Er)|Kausik Sengupta,S. Rayaprol,E. V. Sampathkumaran,Th. Doert,J. P. F. Jemetio###
(1341965, 1341965)
 The results of dc magnetization, heat capacity, electrical resistivity (rho)and magnetoresistance measurements are reported in detail for the compounds,R<missing VAR>CuAs2 for R<missing VAR> Pr, Nd, Sm, Gd, Tb, Dy, Ho, and Er, crystallizing in HfCuSi2-typetetragonal structure, with the aim of bringing out anomalies among normal(that is, other than Ce and Yb) rare-earths.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[255.0, 50, 'K', 3],[331.0, 20, 'to', 4],[332.0, 30, 'K', 4]

Nd
###Magnetic and transport anomalies in the compounds, RCuAs2 (R= Pr, Nd, Sm, Gd, Tb, Dy, Ho, and Er)|Kausik Sengupta,S. Rayaprol,E. V. Sampathkumaran,Th. Doert,J. P. F. Jemetio###
(1341968, 1341968)
 The results of dc magnetization, heat capacity, electrical resistivity (rho)and magnetoresistance measurements are reported in detail for the compounds,R<missing VAR>CuAs2 for R<missing VAR> Pr, Nd, Sm, Gd, Tb, Dy, Ho, and Er, crystallizing in HfCuSi2-typetetragonal structure, with the aim of bringing out anomalies among normal(that is, other than Ce and Yb) rare-earths.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[252.0, 50, 'K', 3],[328.0, 20, 'to', 4],[329.0, 30, 'K', 4]

Sm
###Magnetic and transport anomalies in the compounds, RCuAs2 (R= Pr, Nd, Sm, Gd, Tb, Dy, Ho, and Er)|Kausik Sengupta,S. Rayaprol,E. V. Sampathkumaran,Th. Doert,J. P. F. Jemetio###
(1341971, 1341971)
 The results of dc magnetization, heat capacity, electrical resistivity (rho)and magnetoresistance measurements are reported in detail for the compounds,R<missing VAR>CuAs2 for R<missing VAR> Pr, Nd, Sm, Gd, Tb, Dy, Ho, and Er, crystallizing in HfCuSi2-typetetragonal structure, with the aim of bringing out anomalies among normal(that is, other than Ce and Yb) rare-earths.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[249.0, 50, 'K', 3],[325.0, 20, 'to', 4],[326.0, 30, 'K', 4]

Gd
###Magnetic and transport anomalies in the compounds, RCuAs2 (R= Pr, Nd, Sm, Gd, Tb, Dy, Ho, and Er)|Kausik Sengupta,S. Rayaprol,E. V. Sampathkumaran,Th. Doert,J. P. F. Jemetio###
(1341974, 1341974)
 The results of dc magnetization, heat capacity, electrical resistivity (rho)and magnetoresistance measurements are reported in detail for the compounds,R<missing VAR>CuAs2 for R<missing VAR> Pr, Nd, Sm, Gd, Tb, Dy, Ho, and Er, crystallizing in HfCuSi2-typetetragonal structure, with the aim of bringing out anomalies among normal(that is, other than Ce and Yb) rare-earths.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[246.0, 50, 'K', 3],[322.0, 20, 'to', 4],[323.0, 30, 'K', 4]

Tb
###Magnetic and transport anomalies in the compounds, RCuAs2 (R= Pr, Nd, Sm, Gd, Tb, Dy, Ho, and Er)|Kausik Sengupta,S. Rayaprol,E. V. Sampathkumaran,Th. Doert,J. P. F. Jemetio###
(1341977, 1341977)
 The results of dc magnetization, heat capacity, electrical resistivity (rho)and magnetoresistance measurements are reported in detail for the compounds,R<missing VAR>CuAs2 for R<missing VAR> Pr, Nd, Sm, Gd, Tb, Dy, Ho, and Er, crystallizing in HfCuSi2-typetetragonal structure, with the aim of bringing out anomalies among normal(that is, other than Ce and Yb) rare-earths.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[243.0, 50, 'K', 3],[319.0, 20, 'to', 4],[320.0, 30, 'K', 4]

Dy
###Magnetic and transport anomalies in the compounds, RCuAs2 (R= Pr, Nd, Sm, Gd, Tb, Dy, Ho, and Er)|Kausik Sengupta,S. Rayaprol,E. V. Sampathkumaran,Th. Doert,J. P. F. Jemetio###
(1341980, 1341980)
 The results of dc magnetization, heat capacity, electrical resistivity (rho)and magnetoresistance measurements are reported in detail for the compounds,R<missing VAR>CuAs2 for R<missing VAR> Pr, Nd, Sm, Gd, Tb, Dy, Ho, and Er, crystallizing in HfCuSi2-typetetragonal structure, with the aim of bringing out anomalies among normal(that is, other than Ce and Yb) rare-earths.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[240.0, 50, 'K', 3],[316.0, 20, 'to', 4],[317.0, 30, 'K', 4]

Ho
###Magnetic and transport anomalies in the compounds, RCuAs2 (R= Pr, Nd, Sm, Gd, Tb, Dy, Ho, and Er)|Kausik Sengupta,S. Rayaprol,E. V. Sampathkumaran,Th. Doert,J. P. F. Jemetio###
(1341983, 1341983)
 The results of dc magnetization, heat capacity, electrical resistivity (rho)and magnetoresistance measurements are reported in detail for the compounds,R<missing VAR>CuAs2 for R<missing VAR> Pr, Nd, Sm, Gd, Tb, Dy, Ho, and Er, crystallizing in HfCuSi2-typetetragonal structure, with the aim of bringing out anomalies among normal(that is, other than Ce and Yb) rare-earths.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[237.0, 50, 'K', 3],[313.0, 20, 'to', 4],[314.0, 30, 'K', 4]

Er
###Magnetic and transport anomalies in the compounds, RCuAs2 (R= Pr, Nd, Sm, Gd, Tb, Dy, Ho, and Er)|Kausik Sengupta,S. Rayaprol,E. V. Sampathkumaran,Th. Doert,J. P. F. Jemetio###
(1341988, 1341988)
 The results of dc magnetization, heat capacity, electrical resistivity (rho)and magnetoresistance measurements are reported in detail for the compounds,R<missing VAR>CuAs2 for R<missing VAR> Pr, Nd, Sm, Gd, Tb, Dy, Ho, and Er, crystallizing in HfCuSi2-typetetragonal structure, with the aim of bringing out anomalies among normal(that is, other than Ce and Yb) rare-earths.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[232.0, 50, 'K', 3],[308.0, 20, 'to', 4],[309.0, 30, 'K', 4]

HfCuSi2
###Magnetic and transport anomalies in the compounds, RCuAs2 (R= Pr, Nd, Sm, Gd, Tb, Dy, Ho, and Er)|Kausik Sengupta,S. Rayaprol,E. V. Sampathkumaran,Th. Doert,J. P. F. Jemetio###
(1341995, 1341998)
 The results of dc magnetization, heat capacity, electrical resistivity (rho)and magnetoresistance measurements are reported in detail for the compounds,R<missing VAR>CuAs2 for R<missing VAR> Pr, Nd, Sm, Gd, Tb, Dy, Ho, and Er, crystallizing in HfCuSi2-typetetragonal structure, with the aim of bringing out anomalies among normal(that is, other than Ce and Yb) rare-earths.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[222.0, 50, 'K', 3],[298.0, 20, 'to', 4],[299.0, 30, 'K', 4]

Ce
###Magnetic and transport anomalies in the compounds, RCuAs2 (R= Pr, Nd, Sm, Gd, Tb, Dy, Ho, and Er)|Kausik Sengupta,S. Rayaprol,E. V. Sampathkumaran,Th. Doert,J. P. F. Jemetio###
(1342037, 1342037)
 The results of dc magnetization, heat capacity, electrical resistivity (rho)and magnetoresistance measurements are reported in detail for the compounds,R<missing VAR>CuAs2 for R<missing VAR> Pr, Nd, Sm, Gd, Tb, Dy, Ho, and Er, crystallizing in HfCuSi2-typetetragonal structure, with the aim of bringing out anomalies among normal(that is, other than Ce and Yb) rare-earths.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[183.0, 50, 'K', 3],[259.0, 20, 'to', 4],[260.0, 30, 'K', 4]

Yb
###Magnetic and transport anomalies in the compounds, RCuAs2 (R= Pr, Nd, Sm, Gd, Tb, Dy, Ho, and Er)|Kausik Sengupta,S. Rayaprol,E. V. Sampathkumaran,Th. Doert,J. P. F. Jemetio###
(1342041, 1342041)
 The results of dc magnetization, heat capacity, electrical resistivity (rho)and magnetoresistance measurements are reported in detail for the compounds,R<missing VAR>CuAs2 for R<missing VAR> Pr, Nd, Sm, Gd, Tb, Dy, Ho, and Er, crystallizing in HfCuSi2-typetetragonal structure, with the aim of bringing out anomalies among normal(that is, other than Ce and Yb) rare-earths.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 50, 'K', 3],[255.0, 20, 'to', 4],[256.0, 30, 'K', 4]

N
###Magnetic and transport anomalies in the compounds, RCuAs2 (R= Pr, Nd, Sm, Gd, Tb, Dy, Ho, and Er)|Kausik Sengupta,S. Rayaprol,E. V. Sampathkumaran,Th. Doert,J. P. F. Jemetio###
(1342109, 1342109)
 Isothermal magnetization (M) data below respective Neeltemperatures (T<missing VAR>N) reveal the existence of field-induced metamagnetic-liketransitions for most of the compounds (except R<missing VAR> Sm and Gd), whereas in Sm andGd compounds M<missing VAR> varies essentially linearly with magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 50, 'K', 1],[187.0, 20, 'to', 2],[188.0, 30, 'K', 2]

Sm
###Magnetic and transport anomalies in the compounds, RCuAs2 (R= Pr, Nd, Sm, Gd, Tb, Dy, Ho, and Er)|Kausik Sengupta,S. Rayaprol,E. V. Sampathkumaran,Th. Doert,J. P. F. Jemetio###
(1342146, 1342146)
 Isothermal magnetization (M) data below respective Neeltemperatures (T<missing VAR>N) reveal the existence of field-induced metamagnetic-liketransitions for most of the compounds (except R<missing VAR> Sm and Gd), whereas in Sm andGd compounds M<missing VAR> varies essentially linearly with magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 50, 'K', 1],[150.0, 20, 'to', 2],[151.0, 30, 'K', 2]

Gd
###Magnetic and transport anomalies in the compounds, RCuAs2 (R= Pr, Nd, Sm, Gd, Tb, Dy, Ho, and Er)|Kausik Sengupta,S. Rayaprol,E. V. Sampathkumaran,Th. Doert,J. P. F. Jemetio###
(1342150, 1342150)
 Isothermal magnetization (M) data below respective Neeltemperatures (T<missing VAR>N) reveal the existence of field-induced metamagnetic-liketransitions for most of the compounds (except R<missing VAR> Sm and Gd), whereas in Sm andGd compounds M<missing VAR> varies essentially linearly with magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 50, 'K', 1],[146.0, 20, 'to', 2],[147.0, 30, 'K', 2]

Sm
###Magnetic and transport anomalies in the compounds, RCuAs2 (R= Pr, Nd, Sm, Gd, Tb, Dy, Ho, and Er)|Kausik Sengupta,S. Rayaprol,E. V. Sampathkumaran,Th. Doert,J. P. F. Jemetio###
(1342158, 1342158)
 Isothermal magnetization (M) data below respective Neeltemperatures (T<missing VAR>N) reveal the existence of field-induced metamagnetic-liketransitions for most of the compounds (except R<missing VAR> Sm and Gd), whereas in Sm andGd compounds M<missing VAR> varies essentially linearly with magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 50, 'K', 1],[138.0, 20, 'to', 2],[139.0, 30, 'K', 2]

Gd
###Magnetic and transport anomalies in the compounds, RCuAs2 (R= Pr, Nd, Sm, Gd, Tb, Dy, Ho, and Er)|Kausik Sengupta,S. Rayaprol,E. V. Sampathkumaran,Th. Doert,J. P. F. Jemetio###
(1342163, 1342163)
 Isothermal magnetization (M) data below respective Neeltemperatures (T<missing VAR>N) reveal the existence of field-induced metamagnetic-liketransitions for most of the compounds (except R<missing VAR> Sm and Gd), whereas in Sm andGd compounds M<missing VAR> varies essentially linearly with magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 50, 'K', 1],[133.0, 20, 'to', 2],[134.0, 30, 'K', 2]

Sm
###Magnetic and transport anomalies in the compounds, RCuAs2 (R= Pr, Nd, Sm, Gd, Tb, Dy, Ho, and Er)|Kausik Sengupta,S. Rayaprol,E. V. Sampathkumaran,Th. Doert,J. P. F. Jemetio###
(1342224, 1342224)
 With respect tothe rho behavior, there appears to be a subtle difference in the temperaturedependence beyond 50 K between Sm on the one hand and the rest on the other.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 50, 'K', 0],[72.0, 20, 'to', 1],[73.0, 30, 'K', 1]

In
###Magnetic and transport anomalies in the compounds, RCuAs2 (R= Pr, Nd, Sm, Gd, Tb, Dy, Ho, and Er)|Kausik Sengupta,S. Rayaprol,E. V. Sampathkumaran,Th. Doert,J. P. F. Jemetio###
(1342247, 1342247)
 Inaddition, the unexpected rho(T) minimum reported recently for R<missing VAR>  Sm, Gd, Tband Dy in the paramagnetic state (around 20 to 30 K) is essentially absent forR<missing VAR>  Ho and Er.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 50, 'K', 1],[49.0, 20, 'to', 0],[50.0, 30, 'K', 0]

Sm
###Magnetic and transport anomalies in the compounds, RCuAs2 (R= Pr, Nd, Sm, Gd, Tb, Dy, Ho, and Er)|Kausik Sengupta,S. Rayaprol,E. V. Sampathkumaran,Th. Doert,J. P. F. Jemetio###
(1342273, 1342273)
 Inaddition, the unexpected rho(T) minimum reported recently for R<missing VAR>  Sm, Gd, Tband Dy in the paramagnetic state (around 20 to 30 K) is essentially absent forR<missing VAR>  Ho and Er.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 50, 'K', 1],[23.0, 20, 'to', 0],[24.0, 30, 'K', 0]

Gd
###Magnetic and transport anomalies in the compounds, RCuAs2 (R= Pr, Nd, Sm, Gd, Tb, Dy, Ho, and Er)|Kausik Sengupta,S. Rayaprol,E. V. Sampathkumaran,Th. Doert,J. P. F. Jemetio###
(1342276, 1342276)
 Inaddition, the unexpected rho(T) minimum reported recently for R<missing VAR>  Sm, Gd, Tband Dy in the paramagnetic state (around 20 to 30 K) is essentially absent forR<missing VAR>  Ho and Er.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 50, 'K', 1],[20.0, 20, 'to', 0],[21.0, 30, 'K', 0]

Tb
###Magnetic and transport anomalies in the compounds, RCuAs2 (R= Pr, Nd, Sm, Gd, Tb, Dy, Ho, and Er)|Kausik Sengupta,S. Rayaprol,E. V. Sampathkumaran,Th. Doert,J. P. F. Jemetio###
(1342279, 1342279)
 Inaddition, the unexpected rho(T) minimum reported recently for R<missing VAR>  Sm, Gd, Tband Dy in the paramagnetic state (around 20 to 30 K) is essentially absent forR<missing VAR>  Ho and Er.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 50, 'K', 1],[17.0, 20, 'to', 0],[18.0, 30, 'K', 0]

Dy
###Magnetic and transport anomalies in the compounds, RCuAs2 (R= Pr, Nd, Sm, Gd, Tb, Dy, Ho, and Er)|Kausik Sengupta,S. Rayaprol,E. V. Sampathkumaran,Th. Doert,J. P. F. Jemetio###
(1342284, 1342284)
 Inaddition, the unexpected rho(T) minimum reported recently for R<missing VAR>  Sm, Gd, Tband Dy in the paramagnetic state (around 20 to 30 K) is essentially absent forR<missing VAR>  Ho and Er.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 50, 'K', 1],[12.0, 20, 'to', 0],[13.0, 30, 'K', 0]

Ho
###Magnetic and transport anomalies in the compounds, RCuAs2 (R= Pr, Nd, Sm, Gd, Tb, Dy, Ho, and Er)|Kausik Sengupta,S. Rayaprol,E. V. Sampathkumaran,Th. Doert,J. P. F. Jemetio###
(1342312, 1342312)
 Inaddition, the unexpected rho(T) minimum reported recently for R<missing VAR>  Sm, Gd, Tband Dy in the paramagnetic state (around 20 to 30 K) is essentially absent forR<missing VAR>  Ho and Er.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 50, 'K', 1],[16.0, 20, 'to', 0],[15.0, 30, 'K', 0]

Er
###Magnetic and transport anomalies in the compounds, RCuAs2 (R= Pr, Nd, Sm, Gd, Tb, Dy, Ho, and Er)|Kausik Sengupta,S. Rayaprol,E. V. Sampathkumaran,Th. Doert,J. P. F. Jemetio###
(1342316, 1342316)
 Inaddition, the unexpected rho(T) minimum reported recently for R<missing VAR>  Sm, Gd, Tband Dy in the paramagnetic state (around 20 to 30 K) is essentially absent forR<missing VAR>  Ho and Er.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 50, 'K', 1],[20.0, 20, 'to', 0],[19.0, 30, 'K', 0]

N
###Magnetic and transport anomalies in the compounds, RCuAs2 (R= Pr, Nd, Sm, Gd, Tb, Dy, Ho, and Er)|Kausik Sengupta,S. Rayaprol,E. V. Sampathkumaran,Th. Doert,J. P. F. Jemetio###
(1342398, 1342398)
 The results overall reveal that the normal rare-earths in thisseries present an interesting situation in magnetism, warranting a newtheoretical approach to describe the transport behavior in the paramagneticstate particularly in the vicinity of T<missing VAR>N.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 50, 'K', 2],[102.0, 20, 'to', 1],[101.0, 30, 'K', 1]

In
###Insulator to Metal Transition Induced by Disorder in a Model for Manganites|C. Sen,G. Alvarez,E. Dagotto###
(1342673, 1342673)
 In this paper, a qualitative explanation forthis effect is presented.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[170.0, 87, ',', 6],[75.0, 91, ',', 1]

Cr
###Observation of ferromagnetism above 900 K in Cr-GaN and Cr-AlN|H. X. Liu,Stephen Y. Wu,R. K. Singh,Lin Gu,David J. Smith,N. R. Dilley,L. Montes,M. B. Simmonds,N. Newman###
(1342925, 1342925)
Observation of ferromagnetism above 900 K in Cr-GaN and Cr-AlN.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 900, 'K', 0],[28.0, 900, 'K', 1],[88.0, 0.42, 'and', 2],[89.0, 0.6, 'u', 2],[105.0, 14, '%', 2],[110.0, 20, '%', 2],[213.0, 0.06, 'cm', 4]

GaN
###Observation of ferromagnetism above 900 K in Cr-GaN and Cr-AlN|H. X. Liu,Stephen Y. Wu,R. K. Singh,Lin Gu,David J. Smith,N. R. Dilley,L. Montes,M. B. Simmonds,N. Newman###
(1342927, 1342928)
Observation of ferromagnetism above 900 K in Cr-GaN and Cr-AlN.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 900, 'K', 0],[25.0, 900, 'K', 1],[85.0, 0.42, 'and', 2],[86.0, 0.6, 'u', 2],[102.0, 14, '%', 2],[107.0, 20, '%', 2],[210.0, 0.06, 'cm', 4]

Cr
###Observation of ferromagnetism above 900 K in Cr-GaN and Cr-AlN|H. X. Liu,Stephen Y. Wu,R. K. Singh,Lin Gu,David J. Smith,N. R. Dilley,L. Montes,M. B. Simmonds,N. Newman###
(1342932, 1342932)
Observation of ferromagnetism above 900 K in Cr-GaN and Cr-AlN.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 900, 'K', 0],[21.0, 900, 'K', 1],[81.0, 0.42, 'and', 2],[82.0, 0.6, 'u', 2],[98.0, 14, '%', 2],[103.0, 20, '%', 2],[206.0, 0.06, 'cm', 4]

AlN
###Observation of ferromagnetism above 900 K in Cr-GaN and Cr-AlN|H. X. Liu,Stephen Y. Wu,R. K. Singh,Lin Gu,David J. Smith,N. R. Dilley,L. Montes,M. B. Simmonds,N. Newman###
(1342934, 1342935)
Observation of ferromagnetism above 900 K in Cr-GaN and Cr-AlN.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 900, 'K', 0],[18.0, 900, 'K', 1],[78.0, 0.42, 'and', 2],[79.0, 0.6, 'u', 2],[95.0, 14, '%', 2],[100.0, 20, '%', 2],[203.0, 0.06, 'cm', 4]

Cr
###Observation of ferromagnetism above 900 K in Cr-GaN and Cr-AlN|H. X. Liu,Stephen Y. Wu,R. K. Singh,Lin Gu,David J. Smith,N. R. Dilley,L. Montes,M. B. Simmonds,N. Newman###
(1342957, 1342957)
 We report the observation of ferromagnetism at over 900K in Cr-GaN and Cr-AlNthin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 900, 'K', 1],[4.0, 900, 'K', 0],[56.0, 0.42, 'and', 1],[57.0, 0.6, 'u', 1],[73.0, 14, '%', 1],[78.0, 20, '%', 1],[181.0, 0.06, 'cm', 3]

GaN
###Observation of ferromagnetism above 900 K in Cr-GaN and Cr-AlN|H. X. Liu,Stephen Y. Wu,R. K. Singh,Lin Gu,David J. Smith,N. R. Dilley,L. Montes,M. B. Simmonds,N. Newman###
(1342959, 1342960)
 We report the observation of ferromagnetism at over 900K in Cr-GaN and Cr-AlNthin films.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 900, 'K', 1],[6.0, 900, 'K', 0],[53.0, 0.42, 'and', 1],[54.0, 0.6, 'u', 1],[70.0, 14, '%', 1],[75.0, 20, '%', 1],[178.0, 0.06, 'cm', 3]

Cr
###Observation of ferromagnetism above 900 K in Cr-GaN and Cr-AlN|H. X. Liu,Stephen Y. Wu,R. K. Singh,Lin Gu,David J. Smith,N. R. Dilley,L. Montes,M. B. Simmonds,N. Newman###
(1342964, 1342964)
 We report the observation of ferromagnetism at over 900K in Cr-GaN and Cr-AlNthin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 900, 'K', 1],[11.0, 900, 'K', 0],[49.0, 0.42, 'and', 1],[50.0, 0.6, 'u', 1],[66.0, 14, '%', 1],[71.0, 20, '%', 1],[174.0, 0.06, 'cm', 3]

AlN
###Observation of ferromagnetism above 900 K in Cr-GaN and Cr-AlN|H. X. Liu,Stephen Y. Wu,R. K. Singh,Lin Gu,David J. Smith,N. R. Dilley,L. Montes,M. B. Simmonds,N. Newman###
(1342966, 1342967)
 We report the observation of ferromagnetism at over 900K in Cr-GaN and Cr-AlNthin films.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 900, 'K', 1],[13.0, 900, 'K', 0],[46.0, 0.42, 'and', 1],[47.0, 0.6, 'u', 1],[63.0, 14, '%', 1],[68.0, 20, '%', 1],[171.0, 0.06, 'cm', 3]

Cr
###Observation of ferromagnetism above 900 K in Cr-GaN and Cr-AlN|H. X. Liu,Stephen Y. Wu,R. K. Singh,Lin Gu,David J. Smith,N. R. Dilley,L. Montes,M. B. Simmonds,N. Newman###
(1342993, 1342993)
 The saturation magnetization moments in our best films of Cr-GaNand Cr-AlN at low temperatures are 0.42 and 0.6 uB/Cr atom, respectively,indicating that 14% and 20%, of the Cr atoms, respectively, are magneticallyactive.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 900, 'K', 2],[40.0, 900, 'K', 1],[20.0, 0.42, 'and', 0],[21.0, 0.6, 'u', 0],[37.0, 14, '%', 0],[42.0, 20, '%', 0],[145.0, 0.06, 'cm', 2]

GaN
###Observation of ferromagnetism above 900 K in Cr-GaN and Cr-AlN|H. X. Liu,Stephen Y. Wu,R. K. Singh,Lin Gu,David J. Smith,N. R. Dilley,L. Montes,M. B. Simmonds,N. Newman###
(1342995, 1342996)
 The saturation magnetization moments in our best films of Cr-GaNand Cr-AlN at low temperatures are 0.42 and 0.6 uB/Cr atom, respectively,indicating that 14% and 20%, of the Cr atoms, respectively, are magneticallyactive.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 900, 'K', 2],[42.0, 900, 'K', 1],[17.0, 0.42, 'and', 0],[18.0, 0.6, 'u', 0],[34.0, 14, '%', 0],[39.0, 20, '%', 0],[142.0, 0.06, 'cm', 2]

Cr
###Observation of ferromagnetism above 900 K in Cr-GaN and Cr-AlN|H. X. Liu,Stephen Y. Wu,R. K. Singh,Lin Gu,David J. Smith,N. R. Dilley,L. Montes,M. B. Simmonds,N. Newman###
(1343001, 1343001)
 The saturation magnetization moments in our best films of Cr-GaNand Cr-AlN at low temperatures are 0.42 and 0.6 uB/Cr atom, respectively,indicating that 14% and 20%, of the Cr atoms, respectively, are magneticallyactive.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 900, 'K', 2],[48.0, 900, 'K', 1],[12.0, 0.42, 'and', 0],[13.0, 0.6, 'u', 0],[29.0, 14, '%', 0],[34.0, 20, '%', 0],[137.0, 0.06, 'cm', 2]

AlN
###Observation of ferromagnetism above 900 K in Cr-GaN and Cr-AlN|H. X. Liu,Stephen Y. Wu,R. K. Singh,Lin Gu,David J. Smith,N. R. Dilley,L. Montes,M. B. Simmonds,N. Newman###
(1343003, 1343004)
 The saturation magnetization moments in our best films of Cr-GaNand Cr-AlN at low temperatures are 0.42 and 0.6 uB/Cr atom, respectively,indicating that 14% and 20%, of the Cr atoms, respectively, are magneticallyactive.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 900, 'K', 2],[50.0, 900, 'K', 1],[9.0, 0.42, 'and', 0],[10.0, 0.6, 'u', 0],[26.0, 14, '%', 0],[31.0, 20, '%', 0],[134.0, 0.06, 'cm', 2]

B/Cr
###Observation of ferromagnetism above 900 K in Cr-GaN and Cr-AlN|H. X. Liu,Stephen Y. Wu,R. K. Singh,Lin Gu,David J. Smith,N. R. Dilley,L. Montes,M. B. Simmonds,N. Newman###
(1343015, 1343017)
 The saturation magnetization moments in our best films of Cr-GaNand Cr-AlN at low temperatures are 0.42 and 0.6 uB/Cr atom, respectively,indicating that 14% and 20%, of the Cr atoms, respectively, are magneticallyactive.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[94.0, 900, 'K', 2],[62.0, 900, 'K', 1],[2.0, 0.42, 'and', 0],[1.0, 0.6, 'u', 0],[13.0, 14, '%', 0],[18.0, 20, '%', 0],[121.0, 0.06, 'cm', 2]

Cr
###Observation of ferromagnetism above 900 K in Cr-GaN and Cr-AlN|H. X. Liu,Stephen Y. Wu,R. K. Singh,Lin Gu,David J. Smith,N. R. Dilley,L. Montes,M. B. Simmonds,N. Newman###
(1343043, 1343043)
 The saturation magnetization moments in our best films of Cr-GaNand Cr-AlN at low temperatures are 0.42 and 0.6 uB/Cr atom, respectively,indicating that 14% and 20%, of the Cr atoms, respectively, are magneticallyactive.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 900, 'K', 2],[90.0, 900, 'K', 1],[30.0, 0.42, 'and', 0],[29.0, 0.6, 'u', 0],[13.0, 14, '%', 0],[8.0, 20, '%', 0],[95.0, 0.06, 'cm', 2]

Cr
###Observation of ferromagnetism above 900 K in Cr-GaN and Cr-AlN|H. X. Liu,Stephen Y. Wu,R. K. Singh,Lin Gu,David J. Smith,N. R. Dilley,L. Montes,M. B. Simmonds,N. Newman###
(1343061, 1343061)
 While Cr-AlN is highly resistive, Cr-GaN exhibits thermally activatedconduction that follows the exponential law expected for variable range hoppingbetween localized states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 900, 'K', 3],[108.0, 900, 'K', 2],[48.0, 0.42, 'and', 1],[47.0, 0.6, 'u', 1],[31.0, 14, '%', 1],[26.0, 20, '%', 1],[77.0, 0.06, 'cm', 1]

AlN
###Observation of ferromagnetism above 900 K in Cr-GaN and Cr-AlN|H. X. Liu,Stephen Y. Wu,R. K. Singh,Lin Gu,David J. Smith,N. R. Dilley,L. Montes,M. B. Simmonds,N. Newman###
(1343063, 1343064)
 While Cr-AlN is highly resistive, Cr-GaN exhibits thermally activatedconduction that follows the exponential law expected for variable range hoppingbetween localized states.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 900, 'K', 3],[110.0, 900, 'K', 2],[50.0, 0.42, 'and', 1],[49.0, 0.6, 'u', 1],[33.0, 14, '%', 1],[28.0, 20, '%', 1],[74.0, 0.06, 'cm', 1]

Cr
###Observation of ferromagnetism above 900 K in Cr-GaN and Cr-AlN|H. X. Liu,Stephen Y. Wu,R. K. Singh,Lin Gu,David J. Smith,N. R. Dilley,L. Montes,M. B. Simmonds,N. Newman###
(1343073, 1343073)
 While Cr-AlN is highly resistive, Cr-GaN exhibits thermally activatedconduction that follows the exponential law expected for variable range hoppingbetween localized states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 900, 'K', 3],[120.0, 900, 'K', 2],[60.0, 0.42, 'and', 1],[59.0, 0.6, 'u', 1],[43.0, 14, '%', 1],[38.0, 20, '%', 1],[65.0, 0.06, 'cm', 1]

GaN
###Observation of ferromagnetism above 900 K in Cr-GaN and Cr-AlN|H. X. Liu,Stephen Y. Wu,R. K. Singh,Lin Gu,David J. Smith,N. R. Dilley,L. Montes,M. B. Simmonds,N. Newman###
(1343075, 1343076)
 While Cr-AlN is highly resistive, Cr-GaN exhibits thermally activatedconduction that follows the exponential law expected for variable range hoppingbetween localized states.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 900, 'K', 3],[122.0, 900, 'K', 2],[62.0, 0.42, 'and', 1],[61.0, 0.6, 'u', 1],[45.0, 14, '%', 1],[40.0, 20, '%', 1],[62.0, 0.06, 'cm', 1]

Cr
###Observation of ferromagnetism above 900 K in Cr-GaN and Cr-AlN|H. X. Liu,Stephen Y. Wu,R. K. Singh,Lin Gu,David J. Smith,N. R. Dilley,L. Montes,M. B. Simmonds,N. Newman###
(1343123, 1343123)
 Hall measurements on a Cr-GaN sample indicate amobility of 0.06 cm2/V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[202.0, 900, 'K', 4],[170.0, 900, 'K', 3],[110.0, 0.42, 'and', 2],[109.0, 0.6, 'u', 2],[93.0, 14, '%', 2],[88.0, 20, '%', 2],[15.0, 0.06, 'cm', 0]

GaN
###Observation of ferromagnetism above 900 K in Cr-GaN and Cr-AlN|H. X. Liu,Stephen Y. Wu,R. K. Singh,Lin Gu,David J. Smith,N. R. Dilley,L. Montes,M. B. Simmonds,N. Newman###
(1343125, 1343126)
 Hall measurements on a Cr-GaN sample indicate amobility of 0.06 cm2/V.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[204.0, 900, 'K', 4],[172.0, 900, 'K', 3],[112.0, 0.42, 'and', 2],[111.0, 0.6, 'u', 2],[95.0, 14, '%', 2],[90.0, 20, '%', 2],[12.0, 0.06, 'cm', 0]

V
###Observation of ferromagnetism above 900 K in Cr-GaN and Cr-AlN|H. X. Liu,Stephen Y. Wu,R. K. Singh,Lin Gu,David J. Smith,N. R. Dilley,L. Montes,M. B. Simmonds,N. Newman###
(1343141, 1343141)
 Hall measurements on a Cr-GaN sample indicate amobility of 0.06 cm2/V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[220.0, 900, 'K', 4],[188.0, 900, 'K', 3],[128.0, 0.42, 'and', 2],[127.0, 0.6, 'u', 2],[111.0, 14, '%', 2],[106.0, 20, '%', 2],[3.0, 0.06, 'cm', 0]

Cr
###Observation of ferromagnetism above 900 K in Cr-GaN and Cr-AlN|H. X. Liu,Stephen Y. Wu,R. K. Singh,Lin Gu,David J. Smith,N. R. Dilley,L. Montes,M. B. Simmonds,N. Newman###
(1343207, 1343207)
s<missing VAR>, which falls in the range characteristic of hoppingconduction, and a free carrier density (1.4E<missing VAR>20/cm3), which is similar inmagnitude to the measured magnetically-active Cr concentration (4.9E<missing VAR>19/cm3).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[286.0, 900, 'K', 5],[254.0, 900, 'K', 4],[194.0, 0.42, 'and', 3],[193.0, 0.6, 'u', 3],[177.0, 14, '%', 3],[172.0, 20, '%', 3],[69.0, 0.06, 'cm', 1]

Cr
###Observation of ferromagnetism above 900 K in Cr-GaN and Cr-AlN|H. X. Liu,Stephen Y. Wu,R. K. Singh,Lin Gu,David J. Smith,N. R. Dilley,L. Montes,M. B. Simmonds,N. Newman###
(1343269, 1343269)
 The results indicate thatferromagnetism in Cr-GaN and Cr-AlN can be attributed to the double exchangemechanism as a result of hopping between near-midgap substitutional Cr impuritybands.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[348.0, 900, 'K', 7],[316.0, 900, 'K', 6],[256.0, 0.42, 'and', 5],[255.0, 0.6, 'u', 5],[239.0, 14, '%', 5],[234.0, 20, '%', 5],[131.0, 0.06, 'cm', 3]

GaN
###Observation of ferromagnetism above 900 K in Cr-GaN and Cr-AlN|H. X. Liu,Stephen Y. Wu,R. K. Singh,Lin Gu,David J. Smith,N. R. Dilley,L. Montes,M. B. Simmonds,N. Newman###
(1343271, 1343272)
 The results indicate thatferromagnetism in Cr-GaN and Cr-AlN can be attributed to the double exchangemechanism as a result of hopping between near-midgap substitutional Cr impuritybands.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[350.0, 900, 'K', 7],[318.0, 900, 'K', 6],[258.0, 0.42, 'and', 5],[257.0, 0.6, 'u', 5],[241.0, 14, '%', 5],[236.0, 20, '%', 5],[133.0, 0.06, 'cm', 3]

Cr
###Observation of ferromagnetism above 900 K in Cr-GaN and Cr-AlN|H. X. Liu,Stephen Y. Wu,R. K. Singh,Lin Gu,David J. Smith,N. R. Dilley,L. Montes,M. B. Simmonds,N. Newman###
(1343276, 1343276)
 The results indicate thatferromagnetism in Cr-GaN and Cr-AlN can be attributed to the double exchangemechanism as a result of hopping between near-midgap substitutional Cr impuritybands.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[355.0, 900, 'K', 7],[323.0, 900, 'K', 6],[263.0, 0.42, 'and', 5],[262.0, 0.6, 'u', 5],[246.0, 14, '%', 5],[241.0, 20, '%', 5],[138.0, 0.06, 'cm', 3]

AlN
###Observation of ferromagnetism above 900 K in Cr-GaN and Cr-AlN|H. X. Liu,Stephen Y. Wu,R. K. Singh,Lin Gu,David J. Smith,N. R. Dilley,L. Montes,M. B. Simmonds,N. Newman###
(1343278, 1343279)
 The results indicate thatferromagnetism in Cr-GaN and Cr-AlN can be attributed to the double exchangemechanism as a result of hopping between near-midgap substitutional Cr impuritybands.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[357.0, 900, 'K', 7],[325.0, 900, 'K', 6],[265.0, 0.42, 'and', 5],[264.0, 0.6, 'u', 5],[248.0, 14, '%', 5],[243.0, 20, '%', 5],[140.0, 0.06, 'cm', 3]

Cr
###Observation of ferromagnetism above 900 K in Cr-GaN and Cr-AlN|H. X. Liu,Stephen Y. Wu,R. K. Singh,Lin Gu,David J. Smith,N. R. Dilley,L. Montes,M. B. Simmonds,N. Newman###
(1343316, 1343316)
 The results indicate thatferromagnetism in Cr-GaN and Cr-AlN can be attributed to the double exchangemechanism as a result of hopping between near-midgap substitutional Cr impuritybands.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[395.0, 900, 'K', 7],[363.0, 900, 'K', 6],[303.0, 0.42, 'and', 5],[302.0, 0.6, 'u', 5],[286.0, 14, '%', 5],[281.0, 20, '%', 5],[178.0, 0.06, 'cm', 3]

B
###Inverse flux quantum periodicity of magnetoresistance oscillations in two-dimensional short-period surface superlattices|X. F. Wang,P. Vasilopoulos,F. M. Peeters###
(1343405, 1343405)
 Transport properties of the two-dimensional electron gas (2DEG) areconsidered in the presence of a perpendicular magnetic field B and of a itweak two-dimensional (2D) periodic potential modulation in the 2DEG plane.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 2, 'DEG', 0],[229.0, 2, 'D', 5]

Pr1-x
###The transport, ultrasound, and structural properties for the charge ordered Pr1-xCaxMnO3 (0.5<=x<=0.875) manganites|R. K. Zheng,G. Li,Y. Yang,A. N. Tang,W. Wang,T. Qian,X. G. Li###
(1343838, 1343841)
The transport, ultrasound, and structural properties for the charge ordered Pr1-xCaxMnO3 (0.5<x<missing VAR><0.875) manganites.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[7.0, 0.5, '<', 0],[103.0, 0.5, '<', 1],[268.0, 0.625, ',', 3],[290.0, 0.625, '<', 3],[294.0, 0.8, ',', 3],[370.0, 0.5, 'to', 4],[372.0, 0.625, ',', 4],[386.0, 0.625, '<', 4],[390.0, 0.825, ',', 4]

MnO3
###The transport, ultrasound, and structural properties for the charge ordered Pr1-xCaxMnO3 (0.5<=x<=0.875) manganites|R. K. Zheng,G. Li,Y. Yang,A. N. Tang,W. Wang,T. Qian,X. G. Li###
(1343843, 1343845)
The transport, ultrasound, and structural properties for the charge ordered Pr1-xCaxMnO3 (0.5<x<missing VAR><0.875) manganites.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 0.5, '<', 0],[99.0, 0.5, '<', 1],[264.0, 0.625, ',', 3],[286.0, 0.625, '<', 3],[290.0, 0.8, ',', 3],[366.0, 0.5, 'to', 4],[368.0, 0.625, ',', 4],[382.0, 0.625, '<', 4],[386.0, 0.825, ',', 4]

(CO)
###The transport, ultrasound, and structural properties for the charge ordered Pr1-xCaxMnO3 (0.5<=x<=0.875) manganites|R. K. Zheng,G. Li,Y. Yang,A. N. Tang,W. Wang,T. Qian,X. G. Li###
(1343897, 1343900)
 The effects of the cooperative Jahn-Teller effect on the crystal structureand the stability of the charge ordered (CO) state were studied by measurementsof powder X<missing VAR>-ray diffraction, resistivity, and ultrasound for Pr1-xCaxMnO3(0.5<x<missing VAR><0.875).
Featurization successful!
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 0.5, '<', 1],[44.0, 0.5, '<', 0],[209.0, 0.625, ',', 2],[231.0, 0.625, '<', 2],[235.0, 0.8, ',', 2],[311.0, 0.5, 'to', 3],[313.0, 0.625, ',', 3],[327.0, 0.625, '<', 3],[331.0, 0.825, ',', 3]

Pr1-x
###The transport, ultrasound, and structural properties for the charge ordered Pr1-xCaxMnO3 (0.5<=x<=0.875) manganites|R. K. Zheng,G. Li,Y. Yang,A. N. Tang,W. Wang,T. Qian,X. G. Li###
(1343933, 1343936)
 The effects of the cooperative Jahn-Teller effect on the crystal structureand the stability of the charge ordered (CO) state were studied by measurementsof powder X<missing VAR>-ray diffraction, resistivity, and ultrasound for Pr1-xCaxMnO3(0.5<x<missing VAR><0.875).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[85.0, 0.5, '<', 1],[8.0, 0.5, '<', 0],[173.0, 0.625, ',', 2],[195.0, 0.625, '<', 2],[199.0, 0.8, ',', 2],[275.0, 0.5, 'to', 3],[277.0, 0.625, ',', 3],[291.0, 0.625, '<', 3],[295.0, 0.825, ',', 3]

MnO3
###The transport, ultrasound, and structural properties for the charge ordered Pr1-xCaxMnO3 (0.5<=x<=0.875) manganites|R. K. Zheng,G. Li,Y. Yang,A. N. Tang,W. Wang,T. Qian,X. G. Li###
(1343938, 1343940)
 The effects of the cooperative Jahn-Teller effect on the crystal structureand the stability of the charge ordered (CO) state were studied by measurementsof powder X<missing VAR>-ray diffraction, resistivity, and ultrasound for Pr1-xCaxMnO3(0.5<x<missing VAR><0.875).
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 0.5, '<', 1],[4.0, 0.5, '<', 0],[169.0, 0.625, ',', 2],[191.0, 0.625, '<', 2],[195.0, 0.8, ',', 2],[271.0, 0.5, 'to', 3],[273.0, 0.625, ',', 3],[287.0, 0.625, '<', 3],[291.0, 0.825, ',', 3]

CO
###The transport, ultrasound, and structural properties for the charge ordered Pr1-xCaxMnO3 (0.5<=x<=0.875) manganites|R. K. Zheng,G. Li,Y. Yang,A. N. Tang,W. Wang,T. Qian,X. G. Li###
(1344004, 1344005)
 Powder X<missing VAR>-ray diffraction revealed a change of the crystalstructure from tetragonally compressed to tetragonally elongated orthorhombicbetween x<missing VAR>0.75 and x<missing VAR>0.8 in the CO state, resulting from the crossover of thecooperative Jahn-Teller vibration mode from Q<missing VAR>2 to Q<missing VAR>3.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 0.5, '<', 2],[60.0, 0.5, '<', 1],[104.0, 0.625, ',', 1],[126.0, 0.625, '<', 1],[130.0, 0.8, ',', 1],[206.0, 0.5, 'to', 2],[208.0, 0.625, ',', 2],[222.0, 0.625, '<', 2],[226.0, 0.825, ',', 2]

V
###The transport, ultrasound, and structural properties for the charge ordered Pr1-xCaxMnO3 (0.5<=x<=0.875) manganites|R. K. Zheng,G. Li,Y. Yang,A. N. Tang,W. Wang,T. Qian,X. G. Li###
(1344061, 1344061)
 The relative stiffeningof the ultrasound (DeltaV/V) reflecting the magnitude of the cooperativeJahn-Teller lattice distortion in the CO state increases with increasing x<missing VAR> from0.5 to 0.625, reaching the largest and being almost x<missing VAR>-independence for0.625<x<missing VAR><0.8, and drops steeply with further increase of x<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[213.0, 0.5, '<', 3],[117.0, 0.5, '<', 2],[48.0, 0.625, ',', 0],[70.0, 0.625, '<', 0],[74.0, 0.8, ',', 0],[150.0, 0.5, 'to', 1],[152.0, 0.625, ',', 1],[166.0, 0.625, '<', 1],[170.0, 0.825, ',', 1]

CO
###The transport, ultrasound, and structural properties for the charge ordered Pr1-xCaxMnO3 (0.5<=x<=0.875) manganites|R. K. Zheng,G. Li,Y. Yang,A. N. Tang,W. Wang,T. Qian,X. G. Li###
(1344089, 1344090)
 The relative stiffeningof the ultrasound (DeltaV/V) reflecting the magnitude of the cooperativeJahn-Teller lattice distortion in the CO state increases with increasing x<missing VAR> from0.5 to 0.625, reaching the largest and being almost x<missing VAR>-independence for0.625<x<missing VAR><0.8, and drops steeply with further increase of x<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[241.0, 0.5, '<', 3],[145.0, 0.5, '<', 2],[19.0, 0.625, ',', 0],[41.0, 0.625, '<', 0],[45.0, 0.8, ',', 0],[121.0, 0.5, 'to', 1],[123.0, 0.625, ',', 1],[137.0, 0.625, '<', 1],[141.0, 0.825, ',', 1]

V/V
###The transport, ultrasound, and structural properties for the charge ordered Pr1-xCaxMnO3 (0.5<=x<=0.875) manganites|R. K. Zheng,G. Li,Y. Yang,A. N. Tang,W. Wang,T. Qian,X. G. Li###
(1344169, 1344171)
 Coincident with thevariation of the DeltaV/V with x<missing VAR>, the stability of the CO state reflected bythe magnetoresistance effect increases with increasing x<missing VAR> from 0.5 to 0.625,reaching the most stable for 0.625<x<missing VAR><0.825, and becomes unstable with furtherincrease of x<missing VAR>.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[321.0, 0.5, '<', 4],[225.0, 0.5, '<', 3],[60.0, 0.625, ',', 1],[38.0, 0.625, '<', 1],[34.0, 0.8, ',', 1],[40.0, 0.5, 'to', 0],[42.0, 0.625, ',', 0],[56.0, 0.625, '<', 0],[60.0, 0.825, ',', 0]

CO
###The transport, ultrasound, and structural properties for the charge ordered Pr1-xCaxMnO3 (0.5<=x<=0.875) manganites|R. K. Zheng,G. Li,Y. Yang,A. N. Tang,W. Wang,T. Qian,X. G. Li###
(1344186, 1344187)
 Coincident with thevariation of the DeltaV/V with x<missing VAR>, the stability of the CO state reflected bythe magnetoresistance effect increases with increasing x<missing VAR> from 0.5 to 0.625,reaching the most stable for 0.625<x<missing VAR><0.825, and becomes unstable with furtherincrease of x<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[338.0, 0.5, '<', 4],[242.0, 0.5, '<', 3],[77.0, 0.625, ',', 1],[55.0, 0.625, '<', 1],[51.0, 0.8, ',', 1],[24.0, 0.5, 'to', 0],[26.0, 0.625, ',', 0],[40.0, 0.625, '<', 0],[44.0, 0.825, ',', 0]

CO
###The transport, ultrasound, and structural properties for the charge ordered Pr1-xCaxMnO3 (0.5<=x<=0.875) manganites|R. K. Zheng,G. Li,Y. Yang,A. N. Tang,W. Wang,T. Qian,X. G. Li###
(1344300, 1344301)
 These features demonstrate that the cooperative Jahn-Tellerlattice distortion is one of the key ingredients in understanding the essentialphysics of the CO state in manganites.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[452.0, 0.5, '<', 5],[356.0, 0.5, '<', 4],[191.0, 0.625, ',', 2],[169.0, 0.625, '<', 2],[165.0, 0.8, ',', 2],[89.0, 0.5, 'to', 1],[87.0, 0.625, ',', 1],[73.0, 0.625, '<', 1],[69.0, 0.825, ',', 1]

RuSr2Gd1.5Ce0.5Cu2O10-d
###Possible Competition between superconductivity and magnetism in RuSr2Gd1.5Ce0.5Cu2O10-d (Ru-1222) Rutheno-cuprate compounds|V. P. S. Awana,M. A. Ansari,Anurag Gupta,R. B. Saxena,H. Kishan,Devendra Buddhikot,S. K. Malik###
(1344332, 1344344)
Possible Competition between superconductivity and magnetism in RuSr2Gd1.5Ce0.5Cu2O10-d (Ru-1222) Rutheno-cuprate compounds.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[128.0, 32, 'K', 2],[136.0, 3.5, 'K', 2],[165.0, 2, 'K', 3],[192.0, 3, 'and', 4],[193.0, 6, 'Tesla', 4],[225.0, 20, '%', 5],[243.0, 2, 'K', 5],[246.0, 3, 'T', 5],[284.0, 100, 'K', 8],[287.0, 106, 'K', 8],[333.0, 5, 'K', 9],[336.0, 20, 'K', 9]

Ru
###Possible Competition between superconductivity and magnetism in RuSr2Gd1.5Ce0.5Cu2O10-d (Ru-1222) Rutheno-cuprate compounds|V. P. S. Awana,M. A. Ansari,Anurag Gupta,R. B. Saxena,H. Kishan,Devendra Buddhikot,S. K. Malik###
(1344347, 1344347)
Possible Competition between superconductivity and magnetism in RuSr2Gd1.5Ce0.5Cu2O10-d (Ru-1222) Rutheno-cuprate compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 32, 'K', 2],[133.0, 3.5, 'K', 2],[162.0, 2, 'K', 3],[189.0, 3, 'and', 4],[190.0, 6, 'Tesla', 4],[222.0, 20, '%', 5],[240.0, 2, 'K', 5],[243.0, 3, 'T', 5],[281.0, 100, 'K', 8],[284.0, 106, 'K', 8],[330.0, 5, 'K', 9],[333.0, 20, 'K', 9]

RuSr2Gd1.5Ce0.5Cu2O10-d
###Possible Competition between superconductivity and magnetism in RuSr2Gd1.5Ce0.5Cu2O10-d (Ru-1222) Rutheno-cuprate compounds|V. P. S. Awana,M. A. Ansari,Anurag Gupta,R. B. Saxena,H. Kishan,Devendra Buddhikot,S. K. Malik###
(1344361, 1344373)
 The RuSr2Gd1.5Ce0.5Cu2O10-d (Ru-1222) compounds, with varying oxygen content,crystallize in a tetragonal crystal structure (space group I4/mmm).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[99.0, 32, 'K', 1],[107.0, 3.5, 'K', 1],[136.0, 2, 'K', 2],[163.0, 3, 'and', 3],[164.0, 6, 'Tesla', 3],[196.0, 20, '%', 4],[214.0, 2, 'K', 4],[217.0, 3, 'T', 4],[255.0, 100, 'K', 7],[258.0, 106, 'K', 7],[304.0, 5, 'K', 8],[307.0, 20, 'K', 8]

Ru
###Possible Competition between superconductivity and magnetism in RuSr2Gd1.5Ce0.5Cu2O10-d (Ru-1222) Rutheno-cuprate compounds|V. P. S. Awana,M. A. Ansari,Anurag Gupta,R. B. Saxena,H. Kishan,Devendra Buddhikot,S. K. Malik###
(1344376, 1344376)
 The RuSr2Gd1.5Ce0.5Cu2O10-d (Ru-1222) compounds, with varying oxygen content,crystallize in a tetragonal crystal structure (space group I4/mmm).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 32, 'K', 1],[104.0, 3.5, 'K', 1],[133.0, 2, 'K', 2],[160.0, 3, 'and', 3],[161.0, 6, 'Tesla', 3],[193.0, 20, '%', 4],[211.0, 2, 'K', 4],[214.0, 3, 'T', 4],[252.0, 100, 'K', 7],[255.0, 106, 'K', 7],[301.0, 5, 'K', 8],[304.0, 20, 'K', 8]

I4
###Possible Competition between superconductivity and magnetism in RuSr2Gd1.5Ce0.5Cu2O10-d (Ru-1222) Rutheno-cuprate compounds|V. P. S. Awana,M. A. Ansari,Anurag Gupta,R. B. Saxena,H. Kishan,Devendra Buddhikot,S. K. Malik###
(1344411, 1344412)
 The RuSr2Gd1.5Ce0.5Cu2O10-d (Ru-1222) compounds, with varying oxygen content,crystallize in a tetragonal crystal structure (space group I4/mmm).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 32, 'K', 1],[68.0, 3.5, 'K', 1],[97.0, 2, 'K', 2],[124.0, 3, 'and', 3],[125.0, 6, 'Tesla', 3],[157.0, 20, '%', 4],[175.0, 2, 'K', 4],[178.0, 3, 'T', 4],[216.0, 100, 'K', 7],[219.0, 106, 'K', 7],[265.0, 5, 'K', 8],[268.0, 20, 'K', 8]

(Tc)
###Possible Competition between superconductivity and magnetism in RuSr2Gd1.5Ce0.5Cu2O10-d (Ru-1222) Rutheno-cuprate compounds|V. P. S. Awana,M. A. Ansari,Anurag Gupta,R. B. Saxena,H. Kishan,Devendra Buddhikot,S. K. Malik###
(1344463, 1344465)
  Resistance (R) versus temperature (T) measurements show that the air-annealedsamples exhibit superconductivity with superconducting transition temperature(Tc) onset at around 32 K and R<missing VAR>0 at 3.5 K.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 32, 'K', 0],[15.0, 3.5, 'K', 0],[44.0, 2, 'K', 1],[71.0, 3, 'and', 2],[72.0, 6, 'Tesla', 2],[104.0, 20, '%', 3],[122.0, 2, 'K', 3],[125.0, 3, 'T', 3],[163.0, 100, 'K', 6],[166.0, 106, 'K', 6],[212.0, 5, 'K', 7],[215.0, 20, 'K', 7]

N2
###Possible Competition between superconductivity and magnetism in RuSr2Gd1.5Ce0.5Cu2O10-d (Ru-1222) Rutheno-cuprate compounds|V. P. S. Awana,M. A. Ansari,Anurag Gupta,R. B. Saxena,H. Kishan,Devendra Buddhikot,S. K. Malik###
(1344494, 1344495)
 On the other hand, the N2-annealedsample is semiconducting down to 2 K.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 32, 'K', 1],[14.0, 3.5, 'K', 1],[14.0, 2, 'K', 0],[41.0, 3, 'and', 1],[42.0, 6, 'Tesla', 1],[74.0, 20, '%', 2],[92.0, 2, 'K', 2],[95.0, 3, 'T', 2],[133.0, 100, 'K', 5],[136.0, 106, 'K', 5],[182.0, 5, 'K', 6],[185.0, 20, 'K', 6]

Tc
###Possible Competition between superconductivity and magnetism in RuSr2Gd1.5Ce0.5Cu2O10-d (Ru-1222) Rutheno-cuprate compounds|V. P. S. Awana,M. A. Ansari,Anurag Gupta,R. B. Saxena,H. Kishan,Devendra Buddhikot,S. K. Malik###
(1344550, 1344550)
 Magneto-transport measurements onair-annealed sample in applied magnetic fields of 3 and 6 Tesla show a decreasein both Tc onset and TR0.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 32, 'K', 2],[70.0, 3.5, 'K', 2],[41.0, 2, 'K', 1],[14.0, 3, 'and', 0],[13.0, 6, 'Tesla', 0],[19.0, 20, '%', 1],[37.0, 2, 'K', 1],[40.0, 3, 'T', 1],[78.0, 100, 'K', 4],[81.0, 106, 'K', 4],[127.0, 5, 'K', 5],[130.0, 20, 'K', 5]

N2
###Possible Competition between superconductivity and magnetism in RuSr2Gd1.5Ce0.5Cu2O10-d (Ru-1222) Rutheno-cuprate compounds|V. P. S. Awana,M. A. Ansari,Anurag Gupta,R. B. Saxena,H. Kishan,Devendra Buddhikot,S. K. Malik###
(1344579, 1344580)
 Magnetoresistance of up to 20% is observed inN2-annealed sample at 2 K and 3 T applied field.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 32, 'K', 3],[99.0, 3.5, 'K', 3],[70.0, 2, 'K', 2],[43.0, 3, 'and', 1],[42.0, 6, 'Tesla', 1],[10.0, 20, '%', 0],[7.0, 2, 'K', 0],[10.0, 3, 'T', 0],[48.0, 100, 'K', 3],[51.0, 106, 'K', 3],[97.0, 5, 'K', 4],[100.0, 20, 'K', 4]

C
###Possible Competition between superconductivity and magnetism in RuSr2Gd1.5Ce0.5Cu2O10-d (Ru-1222) Rutheno-cuprate compounds|V. P. S. Awana,M. A. Ansari,Anurag Gupta,R. B. Saxena,H. Kishan,Devendra Buddhikot,S. K. Malik###
(1344600, 1344600)
 The D<missing VAR>C magnetization data (M<missing VAR>vs.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 32, 'K', 4],[120.0, 3.5, 'K', 4],[91.0, 2, 'K', 3],[64.0, 3, 'and', 2],[63.0, 6, 'Tesla', 2],[31.0, 20, '%', 1],[13.0, 2, 'K', 1],[10.0, 3, 'T', 1],[28.0, 100, 'K', 2],[31.0, 106, 'K', 2],[77.0, 5, 'K', 3],[80.0, 20, 'K', 3]

N2
###Possible Competition between superconductivity and magnetism in RuSr2Gd1.5Ce0.5Cu2O10-d (Ru-1222) Rutheno-cuprate compounds|V. P. S. Awana,M. A. Ansari,Anurag Gupta,R. B. Saxena,H. Kishan,Devendra Buddhikot,S. K. Malik###
(1344647, 1344648)
 at 100 K and 106 K, respectively,for both air- and N2-annealed samples.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 32, 'K', 6],[167.0, 3.5, 'K', 6],[138.0, 2, 'K', 5],[111.0, 3, 'and', 4],[110.0, 6, 'Tesla', 4],[78.0, 20, '%', 3],[60.0, 2, 'K', 3],[57.0, 3, 'T', 3],[19.0, 100, 'K', 0],[16.0, 106, 'K', 0],[29.0, 5, 'K', 1],[32.0, 20, 'K', 1]

(Tc)
###Possible Competition between superconductivity and magnetism in RuSr2Gd1.5Ce0.5Cu2O10-d (Ru-1222) Rutheno-cuprate compounds|V. P. S. Awana,M. A. Ansari,Anurag Gupta,R. B. Saxena,H. Kishan,Devendra Buddhikot,S. K. Malik###
(1344692, 1344694)
 The superconductingtransition temperature (Tc) seems to compete with the magnetic transitiontemperature (Tmag.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[220.0, 32, 'K', 8],[212.0, 3.5, 'K', 8],[183.0, 2, 'K', 7],[156.0, 3, 'and', 6],[155.0, 6, 'Tesla', 6],[123.0, 20, '%', 5],[105.0, 2, 'K', 5],[102.0, 3, 'T', 5],[64.0, 100, 'K', 2],[61.0, 106, 'K', 2],[15.0, 5, 'K', 1],[12.0, 20, 'K', 1]

Ru
###Possible Competition between superconductivity and magnetism in RuSr2Gd1.5Ce0.5Cu2O10-d (Ru-1222) Rutheno-cuprate compounds|V. P. S. Awana,M. A. Ansari,Anurag Gupta,R. B. Saxena,H. Kishan,Devendra Buddhikot,S. K. Malik###
(1344743, 1344743)
 of Ru moments in RuO6 octahedra may have direct influence/connectionwith the appearance of superconductivity in Cu-O2 planes of Ru-1222 compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[271.0, 32, 'K', 10],[263.0, 3.5, 'K', 10],[234.0, 2, 'K', 9],[207.0, 3, 'and', 8],[206.0, 6, 'Tesla', 8],[174.0, 20, '%', 7],[156.0, 2, 'K', 7],[153.0, 3, 'T', 7],[115.0, 100, 'K', 4],[112.0, 106, 'K', 4],[66.0, 5, 'K', 3],[63.0, 20, 'K', 3]

RuO6
###Possible Competition between superconductivity and magnetism in RuSr2Gd1.5Ce0.5Cu2O10-d (Ru-1222) Rutheno-cuprate compounds|V. P. S. Awana,M. A. Ansari,Anurag Gupta,R. B. Saxena,H. Kishan,Devendra Buddhikot,S. K. Malik###
(1344749, 1344751)
 of Ru moments in RuO6 octahedra may have direct influence/connectionwith the appearance of superconductivity in Cu-O2 planes of Ru-1222 compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[277.0, 32, 'K', 10],[269.0, 3.5, 'K', 10],[240.0, 2, 'K', 9],[213.0, 3, 'and', 8],[212.0, 6, 'Tesla', 8],[180.0, 20, '%', 7],[162.0, 2, 'K', 7],[159.0, 3, 'T', 7],[121.0, 100, 'K', 4],[118.0, 106, 'K', 4],[72.0, 5, 'K', 3],[69.0, 20, 'K', 3]

Cu
###Possible Competition between superconductivity and magnetism in RuSr2Gd1.5Ce0.5Cu2O10-d (Ru-1222) Rutheno-cuprate compounds|V. P. S. Awana,M. A. Ansari,Anurag Gupta,R. B. Saxena,H. Kishan,Devendra Buddhikot,S. K. Malik###
(1344778, 1344778)
 of Ru moments in RuO6 octahedra may have direct influence/connectionwith the appearance of superconductivity in Cu-O2 planes of Ru-1222 compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[306.0, 32, 'K', 10],[298.0, 3.5, 'K', 10],[269.0, 2, 'K', 9],[242.0, 3, 'and', 8],[241.0, 6, 'Tesla', 8],[209.0, 20, '%', 7],[191.0, 2, 'K', 7],[188.0, 3, 'T', 7],[150.0, 100, 'K', 4],[147.0, 106, 'K', 4],[101.0, 5, 'K', 3],[98.0, 20, 'K', 3]

O2
###Possible Competition between superconductivity and magnetism in RuSr2Gd1.5Ce0.5Cu2O10-d (Ru-1222) Rutheno-cuprate compounds|V. P. S. Awana,M. A. Ansari,Anurag Gupta,R. B. Saxena,H. Kishan,Devendra Buddhikot,S. K. Malik###
(1344780, 1344781)
 of Ru moments in RuO6 octahedra may have direct influence/connectionwith the appearance of superconductivity in Cu-O2 planes of Ru-1222 compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[308.0, 32, 'K', 10],[300.0, 3.5, 'K', 10],[271.0, 2, 'K', 9],[244.0, 3, 'and', 8],[243.0, 6, 'Tesla', 8],[211.0, 20, '%', 7],[193.0, 2, 'K', 7],[190.0, 3, 'T', 7],[152.0, 100, 'K', 4],[149.0, 106, 'K', 4],[103.0, 5, 'K', 3],[100.0, 20, 'K', 3]

Ru
###Possible Competition between superconductivity and magnetism in RuSr2Gd1.5Ce0.5Cu2O10-d (Ru-1222) Rutheno-cuprate compounds|V. P. S. Awana,M. A. Ansari,Anurag Gupta,R. B. Saxena,H. Kishan,Devendra Buddhikot,S. K. Malik###
(1344787, 1344787)
 of Ru moments in RuO6 octahedra may have direct influence/connectionwith the appearance of superconductivity in Cu-O2 planes of Ru-1222 compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[315.0, 32, 'K', 10],[307.0, 3.5, 'K', 10],[278.0, 2, 'K', 9],[251.0, 3, 'and', 8],[250.0, 6, 'Tesla', 8],[218.0, 20, '%', 7],[200.0, 2, 'K', 7],[197.0, 3, 'T', 7],[159.0, 100, 'K', 4],[156.0, 106, 'K', 4],[110.0, 5, 'K', 3],[107.0, 20, 'K', 3]

P
###Possible Competition between superconductivity and magnetism in RuSr2Gd1.5Ce0.5Cu2O10-d (Ru-1222) Rutheno-cuprate compounds|V. P. S. Awana,M. A. Ansari,Anurag Gupta,R. B. Saxena,H. Kishan,Devendra Buddhikot,S. K. Malik###
(1344821, 1344821)
 PACS 74.25.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[349.0, 32, 'K', 12],[341.0, 3.5, 'K', 12],[312.0, 2, 'K', 11],[285.0, 3, 'and', 10],[284.0, 6, 'Tesla', 10],[252.0, 20, '%', 9],[234.0, 2, 'K', 9],[231.0, 3, 'T', 9],[193.0, 100, 'K', 6],[190.0, 106, 'K', 6],[144.0, 5, 'K', 5],[141.0, 20, 'K', 5]

CS
###Possible Competition between superconductivity and magnetism in RuSr2Gd1.5Ce0.5Cu2O10-d (Ru-1222) Rutheno-cuprate compounds|V. P. S. Awana,M. A. Ansari,Anurag Gupta,R. B. Saxena,H. Kishan,Devendra Buddhikot,S. K. Malik###
(1344823, 1344824)
 PACS 74.25.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[351.0, 32, 'K', 12],[343.0, 3.5, 'K', 12],[314.0, 2, 'K', 11],[287.0, 3, 'and', 10],[286.0, 6, 'Tesla', 10],[254.0, 20, '%', 9],[236.0, 2, 'K', 9],[233.0, 3, 'T', 9],[195.0, 100, 'K', 6],[192.0, 106, 'K', 6],[146.0, 5, 'K', 5],[143.0, 20, 'K', 5]

Cr
###Possible Competition between superconductivity and magnetism in RuSr2Gd1.5Ce0.5Cu2O10-d (Ru-1222) Rutheno-cuprate compounds|V. P. S. Awana,M. A. Ansari,Anurag Gupta,R. B. Saxena,H. Kishan,Devendra Buddhikot,S. K. Malik###
(1344847, 1344847)
 Cr.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[375.0, 32, 'K', 16],[367.0, 3.5, 'K', 16],[338.0, 2, 'K', 15],[311.0, 3, 'and', 14],[310.0, 6, 'Tesla', 14],[278.0, 20, '%', 13],[260.0, 2, 'K', 13],[257.0, 3, 'T', 13],[219.0, 100, 'K', 10],[216.0, 106, 'K', 10],[170.0, 5, 'K', 9],[167.0, 20, 'K', 9]

Co/Cu/Co
###Non-collinear magnetic structures: a possible cause for current induced switching|P. Weinberger,A. Vernes,B. L. Gyorffy,L. Szunyogh###
(1344889, 1344893)
 Current induced switching in Co/Cu/Co trilayers is described in terms ofab-initio determined magnetic twisting energies and corresponding sheetresistances.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

In
###Non-collinear magnetic structures: a possible cause for current induced switching|P. Weinberger,A. Vernes,B. L. Gyorffy,L. Szunyogh###
(1344930, 1344930)
 In viewing the twisting energy as an energy flux thecharacteristic time thereof is evaluated by means of theLandau-Lifshitz-Gilbert equation using ab-initio parameters.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Non-collinear magnetic structures: a possible cause for current induced switching|P. Weinberger,A. Vernes,B. L. Gyorffy,L. Szunyogh###
(1345015, 1345015)
 Interms of the calculated currents, scalar quantities since a classical Ohms<missing VAR> lawis applied, critical currents needed to switch magnetic configurations fromparallel to antiparallel and vice versa can unambiguously be defined.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ca2-xSr
###Orbital and spin correlations in Ca$_{2-x}$Sr$_x$RuO$_4$: A mean field study|Manfred Sigrist,Matthias Troyer###
(1345301, 1345305)
Orbital and spin correlations in Ca2-xSrx<missing VAR>RuO4 A mean field study.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

RuO4
###Orbital and spin correlations in Ca$_{2-x}$Sr$_x$RuO$_4$: A mean field study|Manfred Sigrist,Matthias Troyer###
(1345307, 1345309)
Orbital and spin correlations in Ca2-xSrx<missing VAR>RuO4 A mean field study.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ca2-xSr
###Orbital and spin correlations in Ca$_{2-x}$Sr$_x$RuO$_4$: A mean field study|Manfred Sigrist,Matthias Troyer###
(1345324, 1345328)
 The alloy Ca2-xSrx<missing VAR>RuO4 exhibits a complex phase diagram withpeculiar magnetic metallic phases.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

RuO4
###Orbital and spin correlations in Ca$_{2-x}$Sr$_x$RuO$_4$: A mean field study|Manfred Sigrist,Matthias Troyer###
(1345330, 1345332)
 The alloy Ca2-xSrx<missing VAR>RuO4 exhibits a complex phase diagram withpeculiar magnetic metallic phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Orbital and spin correlations in Ca$_{2-x}$Sr$_x$RuO$_4$: A mean field study|Manfred Sigrist,Matthias Troyer###
(1345356, 1345356)
 In this paper some aspects of this alloy arediscussed based on a mean field theory for an effective Kugel-Khomskii model oflocalized orbital and spin degrees of freedom.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Orbital and spin correlations in Ca$_{2-x}$Sr$_x$RuO$_4$: A mean field study|Manfred Sigrist,Matthias Troyer###
(1345652, 1345652)
 In thepredominantly antiferromagnetic phase we describe a metamagnetic transition ina magnetic field and show that coupling of the itinerant band to the localizeddegrees of freedom yields an anomalous longitudinal magnetoresistancetransition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Enhancement of TC and reentrant spin-glass transition in La0.86Ca0.14Mn1-yCryO3 (y = 0, 0.1 and 0.2)|R. Suryanarayanan,T. Sudyoadsuk,T. Winotai###
(1345791, 1345791)
Enhancement of T<missing VAR>C and reentrant spin-glass transition in La0.86Ca0.14Mn1-yCryO3 (y<missing VAR>  0, 0.1 and 0.2).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 0, ',', 0],[32.0, 0.1, 'and', 0],[98.0, 0, ',', 1],[100.0, 0.1, 'and', 1],[122.0, 0, ',', 2],[145.0, 185, 'K', 2],[153.0, 0.1, ',', 3],[165.0, 200, 'K', 3],[173.0, 15, 'K', 3],[183.0, 0.2, ',', 3],[191.0, 195, 'K', 3],[199.0, 10, 'K', 3],[251.0, 0, ',', 5],[320.0, 0.1, 'and', 6],[322.0, 0.2, ',', 6],[377.0, 300, 'and', 7],[378.0, 5, 'K', 7]

La0.86Ca0.14Mn1-y
###Enhancement of TC and reentrant spin-glass transition in La0.86Ca0.14Mn1-yCryO3 (y = 0, 0.1 and 0.2)|R. Suryanarayanan,T. Sudyoadsuk,T. Winotai###
(1345805, 1345812)
Enhancement of T<missing VAR>C and reentrant spin-glass transition in La0.86Ca0.14Mn1-yCryO3 (y<missing VAR>  0, 0.1 and 0.2).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[9.0, 0, ',', 0],[11.0, 0.1, 'and', 0],[77.0, 0, ',', 1],[79.0, 0.1, 'and', 1],[101.0, 0, ',', 2],[124.0, 185, 'K', 2],[132.0, 0.1, ',', 3],[144.0, 200, 'K', 3],[152.0, 15, 'K', 3],[162.0, 0.2, ',', 3],[170.0, 195, 'K', 3],[178.0, 10, 'K', 3],[230.0, 0, ',', 5],[299.0, 0.1, 'and', 6],[301.0, 0.2, ',', 6],[356.0, 300, 'and', 7],[357.0, 5, 'K', 7]

O3
###Enhancement of TC and reentrant spin-glass transition in La0.86Ca0.14Mn1-yCryO3 (y = 0, 0.1 and 0.2)|R. Suryanarayanan,T. Sudyoadsuk,T. Winotai###
(1345814, 1345815)
Enhancement of T<missing VAR>C and reentrant spin-glass transition in La0.86Ca0.14Mn1-yCryO3 (y<missing VAR>  0, 0.1 and 0.2).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 0, ',', 0],[8.0, 0.1, 'and', 0],[74.0, 0, ',', 1],[76.0, 0.1, 'and', 1],[98.0, 0, ',', 2],[121.0, 185, 'K', 2],[129.0, 0.1, ',', 3],[141.0, 200, 'K', 3],[149.0, 15, 'K', 3],[159.0, 0.2, ',', 3],[167.0, 195, 'K', 3],[175.0, 10, 'K', 3],[227.0, 0, ',', 5],[296.0, 0.1, 'and', 6],[298.0, 0.2, ',', 6],[353.0, 300, 'and', 7],[354.0, 5, 'K', 7]

La0.86Ca0.14Mn1-y
###Enhancement of TC and reentrant spin-glass transition in La0.86Ca0.14Mn1-yCryO3 (y = 0, 0.1 and 0.2)|R. Suryanarayanan,T. Sudyoadsuk,T. Winotai###
(1345874, 1345881)
 We report on the structural, frequency dependent ac susceptibility, dcmagnetization and magnetoresistance (MR) measurements on polycrystallinesamples of La0.86Ca0.14Mn1-yCryO3(y<missing VAR>  0, 0.1 and 0.2) prepared by sol-geltechnique.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[53.0, 0, ',', 1],[51.0, 0.1, 'and', 1],[8.0, 0, ',', 0],[10.0, 0.1, 'and', 0],[32.0, 0, ',', 1],[55.0, 185, 'K', 1],[63.0, 0.1, ',', 2],[75.0, 200, 'K', 2],[83.0, 15, 'K', 2],[93.0, 0.2, ',', 2],[101.0, 195, 'K', 2],[109.0, 10, 'K', 2],[161.0, 0, ',', 4],[230.0, 0.1, 'and', 5],[232.0, 0.2, ',', 5],[287.0, 300, 'and', 6],[288.0, 5, 'K', 6]

O3
###Enhancement of TC and reentrant spin-glass transition in La0.86Ca0.14Mn1-yCryO3 (y = 0, 0.1 and 0.2)|R. Suryanarayanan,T. Sudyoadsuk,T. Winotai###
(1345883, 1345884)
 We report on the structural, frequency dependent ac susceptibility, dcmagnetization and magnetoresistance (MR) measurements on polycrystallinesamples of La0.86Ca0.14Mn1-yCryO3(y<missing VAR>  0, 0.1 and 0.2) prepared by sol-geltechnique.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 0, ',', 1],[60.0, 0.1, 'and', 1],[5.0, 0, ',', 0],[7.0, 0.1, 'and', 0],[29.0, 0, ',', 1],[52.0, 185, 'K', 1],[60.0, 0.1, ',', 2],[72.0, 200, 'K', 2],[80.0, 15, 'K', 2],[90.0, 0.2, ',', 2],[98.0, 195, 'K', 2],[106.0, 10, 'K', 2],[158.0, 0, ',', 4],[227.0, 0.1, 'and', 5],[229.0, 0.2, ',', 5],[284.0, 300, 'and', 6],[285.0, 5, 'K', 6]

C
###Enhancement of TC and reentrant spin-glass transition in La0.86Ca0.14Mn1-yCryO3 (y = 0, 0.1 and 0.2)|R. Suryanarayanan,T. Sudyoadsuk,T. Winotai###
(1345934, 1345934)
 For y<missing VAR>  0, a paramagnetic to ferromagnetic transition was observedat T<missing VAR>C  185 K.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 0, ',', 2],[111.0, 0.1, 'and', 2],[45.0, 0, ',', 1],[43.0, 0.1, 'and', 1],[21.0, 0, ',', 0],[2.0, 185, 'K', 0],[10.0, 0.1, ',', 1],[22.0, 200, 'K', 1],[30.0, 15, 'K', 1],[40.0, 0.2, ',', 1],[48.0, 195, 'K', 1],[56.0, 10, 'K', 1],[108.0, 0, ',', 3],[177.0, 0.1, 'and', 4],[179.0, 0.2, ',', 4],[234.0, 300, 'and', 5],[235.0, 5, 'K', 5]

C
###Enhancement of TC and reentrant spin-glass transition in La0.86Ca0.14Mn1-yCryO3 (y = 0, 0.1 and 0.2)|R. Suryanarayanan,T. Sudyoadsuk,T. Winotai###
(1345954, 1345954)
 For y<missing VAR>  0.1, the value of T<missing VAR>C  200 K, an increase of 15 K andfor y<missing VAR>  0.2, the T<missing VAR>C  195 K, an increase of 10 K.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 0, ',', 3],[131.0, 0.1, 'and', 3],[65.0, 0, ',', 2],[63.0, 0.1, 'and', 2],[41.0, 0, ',', 1],[18.0, 185, 'K', 1],[10.0, 0.1, ',', 0],[2.0, 200, 'K', 0],[10.0, 15, 'K', 0],[20.0, 0.2, ',', 0],[28.0, 195, 'K', 0],[36.0, 10, 'K', 0],[88.0, 0, ',', 2],[157.0, 0.1, 'and', 3],[159.0, 0.2, ',', 3],[214.0, 300, 'and', 4],[215.0, 5, 'K', 4]

C
###Enhancement of TC and reentrant spin-glass transition in La0.86Ca0.14Mn1-yCryO3 (y = 0, 0.1 and 0.2)|R. Suryanarayanan,T. Sudyoadsuk,T. Winotai###
(1345980, 1345980)
 For y<missing VAR>  0.1, the value of T<missing VAR>C  200 K, an increase of 15 K andfor y<missing VAR>  0.2, the T<missing VAR>C  195 K, an increase of 10 K.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[159.0, 0, ',', 3],[157.0, 0.1, 'and', 3],[91.0, 0, ',', 2],[89.0, 0.1, 'and', 2],[67.0, 0, ',', 1],[44.0, 185, 'K', 1],[36.0, 0.1, ',', 0],[24.0, 200, 'K', 0],[16.0, 15, 'K', 0],[6.0, 0.2, ',', 0],[2.0, 195, 'K', 0],[10.0, 10, 'K', 0],[62.0, 0, ',', 2],[131.0, 0.1, 'and', 3],[133.0, 0.2, ',', 3],[188.0, 300, 'and', 4],[189.0, 5, 'K', 4]

C
###Enhancement of TC and reentrant spin-glass transition in La0.86Ca0.14Mn1-yCryO3 (y = 0, 0.1 and 0.2)|R. Suryanarayanan,T. Sudyoadsuk,T. Winotai###
(1346034, 1346034)
 The imaginary part of the acsusceptibility of all the three samples shows a secondary transition at Tf <T<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[213.0, 0, ',', 4],[211.0, 0.1, 'and', 4],[145.0, 0, ',', 3],[143.0, 0.1, 'and', 3],[121.0, 0, ',', 2],[98.0, 185, 'K', 2],[90.0, 0.1, ',', 1],[78.0, 200, 'K', 1],[70.0, 15, 'K', 1],[60.0, 0.2, ',', 1],[52.0, 195, 'K', 1],[44.0, 10, 'K', 1],[8.0, 0, ',', 1],[77.0, 0.1, 'and', 2],[79.0, 0.2, ',', 2],[134.0, 300, 'and', 3],[135.0, 5, 'K', 3]

C
###Enhancement of TC and reentrant spin-glass transition in La0.86Ca0.14Mn1-yCryO3 (y = 0, 0.1 and 0.2)|R. Suryanarayanan,T. Sudyoadsuk,T. Winotai###
(1346189, 1346189)
 Though all the threesamples show a semi-conducting behavior between 300 and 5 K, a negative MR wasobserved corresponding to T<missing VAR>C and Tf.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[368.0, 0, ',', 7],[366.0, 0.1, 'and', 7],[300.0, 0, ',', 6],[298.0, 0.1, 'and', 6],[276.0, 0, ',', 5],[253.0, 185, 'K', 5],[245.0, 0.1, ',', 4],[233.0, 200, 'K', 4],[225.0, 15, 'K', 4],[215.0, 0.2, ',', 4],[207.0, 195, 'K', 4],[199.0, 10, 'K', 4],[147.0, 0, ',', 2],[78.0, 0.1, 'and', 1],[76.0, 0.2, ',', 1],[21.0, 300, 'and', 0],[20.0, 5, 'K', 0]

Cr
###Enhancement of TC and reentrant spin-glass transition in La0.86Ca0.14Mn1-yCryO3 (y = 0, 0.1 and 0.2)|R. Suryanarayanan,T. Sudyoadsuk,T. Winotai###
(1346211, 1346211)
 The value of MR decreased for the Crsubstituted samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[390.0, 0, ',', 8],[388.0, 0.1, 'and', 8],[322.0, 0, ',', 7],[320.0, 0.1, 'and', 7],[298.0, 0, ',', 6],[275.0, 185, 'K', 6],[267.0, 0.1, ',', 5],[255.0, 200, 'K', 5],[247.0, 15, 'K', 5],[237.0, 0.2, ',', 5],[229.0, 195, 'K', 5],[221.0, 10, 'K', 5],[169.0, 0, ',', 3],[100.0, 0.1, 'and', 2],[98.0, 0.2, ',', 2],[43.0, 300, 'and', 1],[42.0, 5, 'K', 1]

K
###Application of Kondo-lattice theory to Mott-Hubbard metal-insulator crossover in disordered cuprate-oxide superconductors|Fusayoshi J. Ohkawa###
(1346328, 1346328)
 The Kondo temperature T<missing VAR>K is defined as a characteristictemperature or energy scale of local quantum spin fluctuations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Application of Kondo-lattice theory to Mott-Hubbard metal-insulator crossover in disordered cuprate-oxide superconductors|Fusayoshi J. Ohkawa###
(1346366, 1346366)
 Magnetism withT<missing VAR>N >> T<missing VAR>K, where T<missing VAR>N is the Neel temperature, is characterized aslocal-moment one, while magnetism with T<missing VAR>N << T<missing VAR>K is characterized asitinerant-electron one.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Application of Kondo-lattice theory to Mott-Hubbard metal-insulator crossover in disordered cuprate-oxide superconductors|Fusayoshi J. Ohkawa###
(1346372, 1346372)
 Magnetism withT<missing VAR>N >> T<missing VAR>K, where T<missing VAR>N is the Neel temperature, is characterized aslocal-moment one, while magnetism with T<missing VAR>N << T<missing VAR>K is characterized asitinerant-electron one.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Application of Kondo-lattice theory to Mott-Hubbard metal-insulator crossover in disordered cuprate-oxide superconductors|Fusayoshi J. Ohkawa###
(1346378, 1346378)
 Magnetism withT<missing VAR>N >> T<missing VAR>K, where T<missing VAR>N is the Neel temperature, is characterized aslocal-moment one, while magnetism with T<missing VAR>N << T<missing VAR>K is characterized asitinerant-electron one.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Application of Kondo-lattice theory to Mott-Hubbard metal-insulator crossover in disordered cuprate-oxide superconductors|Fusayoshi J. Ohkawa###
(1346384, 1346384)
 Magnetism withT<missing VAR>N >> T<missing VAR>K, where T<missing VAR>N is the Neel temperature, is characterized aslocal-moment one, while magnetism with T<missing VAR>N << T<missing VAR>K is characterized asitinerant-electron one.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Application of Kondo-lattice theory to Mott-Hubbard metal-insulator crossover in disordered cuprate-oxide superconductors|Fusayoshi J. Ohkawa###
(1346411, 1346411)
 Magnetism withT<missing VAR>N >> T<missing VAR>K, where T<missing VAR>N is the Neel temperature, is characterized aslocal-moment one, while magnetism with T<missing VAR>N << T<missing VAR>K is characterized asitinerant-electron one.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Application of Kondo-lattice theory to Mott-Hubbard metal-insulator crossover in disordered cuprate-oxide superconductors|Fusayoshi J. Ohkawa###
(1346417, 1346417)
 Magnetism withT<missing VAR>N >> T<missing VAR>K, where T<missing VAR>N is the Neel temperature, is characterized aslocal-moment one, while magnetism with T<missing VAR>N << T<missing VAR>K is characterized asitinerant-electron one.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Application of Kondo-lattice theory to Mott-Hubbard metal-insulator crossover in disordered cuprate-oxide superconductors|Fusayoshi J. Ohkawa###
(1346526, 1346526)
 Because the renormalization depends onlife-time widths gamma of quasiparticles in such a way that T<missing VAR>K is higher forsmaller gamma, T<missing VAR>N can be controlled by disorder.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Application of Kondo-lattice theory to Mott-Hubbard metal-insulator crossover in disordered cuprate-oxide superconductors|Fusayoshi J. Ohkawa###
(1346541, 1346541)
 Because the renormalization depends onlife-time widths gamma of quasiparticles in such a way that T<missing VAR>K is higher forsmaller gamma, T<missing VAR>N can be controlled by disorder.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Application of Kondo-lattice theory to Mott-Hubbard metal-insulator crossover in disordered cuprate-oxide superconductors|Fusayoshi J. Ohkawa###
(1346561, 1346561)
 The asymmetry of T<missing VAR>N betweenelectron-doped and hole-doped cuprates must mainly arise from that of disorder;an almost symmetric behavior of T<missing VAR>N must be restored if we can preparehole-doped and electron-doped cuprates with similar degree of disorder to eachother.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Application of Kondo-lattice theory to Mott-Hubbard metal-insulator crossover in disordered cuprate-oxide superconductors|Fusayoshi J. Ohkawa###
(1346605, 1346605)
 The asymmetry of T<missing VAR>N betweenelectron-doped and hole-doped cuprates must mainly arise from that of disorder;an almost symmetric behavior of T<missing VAR>N must be restored if we can preparehole-doped and electron-doped cuprates with similar degree of disorder to eachother.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CIS
###Time-Dependent Spintronic Transport and Current-Induced Spin Transfer Torque in Magnetic Tunnel Junctions|Zhen-Gang Zhu,Gang Su,Qing-Rong Zheng,Biao Jin###
(1346771, 1346773)
 The responses of the electrical current and the current-induced spin transfertorque (CISTT) to an ac bias in addition to a dc bias in a magnetic tunneljunction are investigated by means of the time-dependent nonquilibrium Greenfunction technique.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CIS
###Time-Dependent Spintronic Transport and Current-Induced Spin Transfer Torque in Magnetic Tunnel Junctions|Zhen-Gang Zhu,Gang Su,Qing-Rong Zheng,Biao Jin###
(1346848, 1346850)
 The time-averaged current (time-averaged CISTT) isformulated in the form of a summation of dc current (dc CISTT) multiplied byproducts of Bessel functions with the energy levels shifted by m<missing VAR>hbar omega0.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CIS
###Time-Dependent Spintronic Transport and Current-Induced Spin Transfer Torque in Magnetic Tunnel Junctions|Zhen-Gang Zhu,Gang Su,Qing-Rong Zheng,Biao Jin###
(1346881, 1346883)
 The time-averaged current (time-averaged CISTT) isformulated in the form of a summation of dc current (dc CISTT) multiplied byproducts of Bessel functions with the energy levels shifted by m<missing VAR>hbar omega0.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoO2
###Investigation of the Spin Density Wave in NaxCoO2|J. Wooldridge,D. McK Paul,G. Balakrishnan,M. R. Lees###
(1347234, 1347236)
Investigation of the Spin Density Wave in NaxCoO2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 22, 'K', 2],[103.0, 4, 'K', 2],[135.0, 15, 'K', 3],[186.0, 40, '%', 5]

CoO2
###Investigation of the Spin Density Wave in NaxCoO2|J. Wooldridge,D. McK Paul,G. Balakrishnan,M. R. Lees###
(1347262, 1347264)
 Magnetic susceptibility, transport and heat capacity measurements of singlecrystal NaxCoO2 (x<missing VAR>0.71) are reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 22, 'K', 1],[75.0, 4, 'K', 1],[107.0, 15, 'K', 2],[158.0, 40, '%', 4]

S
###Investigation of the Spin Density Wave in NaxCoO2|J. Wooldridge,D. McK Paul,G. Balakrishnan,M. R. Lees###
(1347292, 1347292)
 A transition to a spin density wave(SD<missing VAR>W) state at Tmag  22 K is observable in all measurements, except chi(ac)data in which a cusp is observed at 4 K and attributed to a low temperatureglassy phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 22, 'K', 0],[47.0, 4, 'K', 0],[79.0, 15, 'K', 1],[130.0, 40, '%', 3]

W
###Investigation of the Spin Density Wave in NaxCoO2|J. Wooldridge,D. McK Paul,G. Balakrishnan,M. R. Lees###
(1347294, 1347294)
 A transition to a spin density wave(SD<missing VAR>W) state at Tmag  22 K is observable in all measurements, except chi(ac)data in which a cusp is observed at 4 K and attributed to a low temperatureglassy phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 22, 'K', 0],[45.0, 4, 'K', 0],[77.0, 15, 'K', 1],[128.0, 40, '%', 3]

(H)
###Investigation of the Spin Density Wave in NaxCoO2|J. Wooldridge,D. McK Paul,G. Balakrishnan,M. R. Lees###
(1347360, 1347362)
 M<missing VAR>(H) loops are hysteretic below 15 K.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 22, 'K', 1],[21.0, 4, 'K', 1],[9.0, 15, 'K', 0],[60.0, 40, '%', 2]

S
###Investigation of the Spin Density Wave in NaxCoO2|J. Wooldridge,D. McK Paul,G. Balakrishnan,M. R. Lees###
(1347378, 1347378)
 Both the SD<missing VAR>W transition andlow temperature hysteresis are only visible along the c<missing VAR>-axis.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 22, 'K', 2],[39.0, 4, 'K', 2],[7.0, 15, 'K', 1],[44.0, 40, '%', 1]

W
###Investigation of the Spin Density Wave in NaxCoO2|J. Wooldridge,D. McK Paul,G. Balakrishnan,M. R. Lees###
(1347380, 1347380)
 Both the SD<missing VAR>W transition andlow temperature hysteresis are only visible along the c<missing VAR>-axis.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 22, 'K', 2],[41.0, 4, 'K', 2],[9.0, 15, 'K', 1],[42.0, 40, '%', 1]

C
###Investigation of the Spin Density Wave in NaxCoO2|J. Wooldridge,D. McK Paul,G. Balakrishnan,M. R. Lees###
(1347475, 1347475)
 Calculations of the electronic heat capacity gamma above and belowTmag and the size of the jump in C indicate that the onset of the SD<missing VAR>W bringsabout the opening of gap and the removal of part of the Fermi surface.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[172.0, 22, 'K', 4],[136.0, 4, 'K', 4],[104.0, 15, 'K', 3],[53.0, 40, '%', 1]

S
###Investigation of the Spin Density Wave in NaxCoO2|J. Wooldridge,D. McK Paul,G. Balakrishnan,M. R. Lees###
(1347489, 1347489)
 Calculations of the electronic heat capacity gamma above and belowTmag and the size of the jump in C indicate that the onset of the SD<missing VAR>W bringsabout the opening of gap and the removal of part of the Fermi surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, 22, 'K', 4],[150.0, 4, 'K', 4],[118.0, 15, 'K', 3],[67.0, 40, '%', 1]

W
###Investigation of the Spin Density Wave in NaxCoO2|J. Wooldridge,D. McK Paul,G. Balakrishnan,M. R. Lees###
(1347491, 1347491)
 Calculations of the electronic heat capacity gamma above and belowTmag and the size of the jump in C indicate that the onset of the SD<missing VAR>W bringsabout the opening of gap and the removal of part of the Fermi surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 22, 'K', 4],[152.0, 4, 'K', 4],[120.0, 15, 'K', 3],[69.0, 40, '%', 1]

As
###A Theoretical Study on Spin-Dependent Transport of "Ferromagnet/Carbon Nanotube Encapsulating Magnetic Atoms/Ferromagnet" Junctions with 4-Valued Conductances|Satoshi Kokado,Kikuo Harigaya###
(1347674, 1347674)
 As a novel function of ferromagnet (FM)/spacer/FM<missing VAR> junctions, we theoreticallyinvestigate multiple-valued (or multi-level) cell property, which is inprinciple realized by sensing conductances of four states recorded withmagnetization configurations of two FMs; (up,up), (up,down), (down,up),(down,down).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[246.0, 15, ',', 5]

F
###A Theoretical Study on Spin-Dependent Transport of "Ferromagnet/Carbon Nanotube Encapsulating Magnetic Atoms/Ferromagnet" Junctions with 4-Valued Conductances|Satoshi Kokado,Kikuo Harigaya###
(1347687, 1347687)
 As a novel function of ferromagnet (FM)/spacer/FM<missing VAR> junctions, we theoreticallyinvestigate multiple-valued (or multi-level) cell property, which is inprinciple realized by sensing conductances of four states recorded withmagnetization configurations of two FMs; (up,up), (up,down), (down,up),(down,down).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[233.0, 15, ',', 5]

F
###A Theoretical Study on Spin-Dependent Transport of "Ferromagnet/Carbon Nanotube Encapsulating Magnetic Atoms/Ferromagnet" Junctions with 4-Valued Conductances|Satoshi Kokado,Kikuo Harigaya###
(1347693, 1347693)
 As a novel function of ferromagnet (FM)/spacer/FM<missing VAR> junctions, we theoreticallyinvestigate multiple-valued (or multi-level) cell property, which is inprinciple realized by sensing conductances of four states recorded withmagnetization configurations of two FMs; (up,up), (up,down), (down,up),(down,down).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[227.0, 15, ',', 5]

F
###A Theoretical Study on Spin-Dependent Transport of "Ferromagnet/Carbon Nanotube Encapsulating Magnetic Atoms/Ferromagnet" Junctions with 4-Valued Conductances|Satoshi Kokado,Kikuo Harigaya###
(1347759, 1347759)
 As a novel function of ferromagnet (FM)/spacer/FM<missing VAR> junctions, we theoreticallyinvestigate multiple-valued (or multi-level) cell property, which is inprinciple realized by sensing conductances of four states recorded withmagnetization configurations of two FMs; (up,up), (up,down), (down,up),(down,down).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 15, ',', 5]

In
###A Theoretical Study on Spin-Dependent Transport of "Ferromagnet/Carbon Nanotube Encapsulating Magnetic Atoms/Ferromagnet" Junctions with 4-Valued Conductances|Satoshi Kokado,Kikuo Harigaya###
(1347792, 1347792)
 In order to sense all the states, 4-valued conductancescorresponding to the respective states are necessary.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 15, ',', 4]

F
###A Theoretical Study on Spin-Dependent Transport of "Ferromagnet/Carbon Nanotube Encapsulating Magnetic Atoms/Ferromagnet" Junctions with 4-Valued Conductances|Satoshi Kokado,Kikuo Harigaya###
(1347850, 1347850)
 We previously proposedthat 4-valued conductances are obtained in FM<missing VAR>1/spin-polarized spacer (SPS)/FM<missing VAR>2junctions, where FM<missing VAR>1 and FM<missing VAR>2 have different spin polarizations, and the spacerdepends on spin [J<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 15, ',', 3]

(SPS)
###A Theoretical Study on Spin-Dependent Transport of "Ferromagnet/Carbon Nanotube Encapsulating Magnetic Atoms/Ferromagnet" Junctions with 4-Valued Conductances|Satoshi Kokado,Kikuo Harigaya###
(1347860, 1347864)
 We previously proposedthat 4-valued conductances are obtained in FM<missing VAR>1/spin-polarized spacer (SPS)/FM<missing VAR>2junctions, where FM<missing VAR>1 and FM<missing VAR>2 have different spin polarizations, and the spacerdepends on spin [J<missing VAR>.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 15, ',', 3]

F
###A Theoretical Study on Spin-Dependent Transport of "Ferromagnet/Carbon Nanotube Encapsulating Magnetic Atoms/Ferromagnet" Junctions with 4-Valued Conductances|Satoshi Kokado,Kikuo Harigaya###
(1347866, 1347866)
 We previously proposedthat 4-valued conductances are obtained in FM<missing VAR>1/spin-polarized spacer (SPS)/FM<missing VAR>2junctions, where FM<missing VAR>1 and FM<missing VAR>2 have different spin polarizations, and the spacerdepends on spin [J<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 15, ',', 3]

F
###A Theoretical Study on Spin-Dependent Transport of "Ferromagnet/Carbon Nanotube Encapsulating Magnetic Atoms/Ferromagnet" Junctions with 4-Valued Conductances|Satoshi Kokado,Kikuo Harigaya###
(1347876, 1347876)
 We previously proposedthat 4-valued conductances are obtained in FM<missing VAR>1/spin-polarized spacer (SPS)/FM<missing VAR>2junctions, where FM<missing VAR>1 and FM<missing VAR>2 have different spin polarizations, and the spacerdepends on spin [J<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 15, ',', 3]

F
###A Theoretical Study on Spin-Dependent Transport of "Ferromagnet/Carbon Nanotube Encapsulating Magnetic Atoms/Ferromagnet" Junctions with 4-Valued Conductances|Satoshi Kokado,Kikuo Harigaya###
(1347882, 1347882)
 We previously proposedthat 4-valued conductances are obtained in FM<missing VAR>1/spin-polarized spacer (SPS)/FM<missing VAR>2junctions, where FM<missing VAR>1 and FM<missing VAR>2 have different spin polarizations, and the spacerdepends on spin [J<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 15, ',', 3]

In
###A Theoretical Study on Spin-Dependent Transport of "Ferromagnet/Carbon Nanotube Encapsulating Magnetic Atoms/Ferromagnet" Junctions with 4-Valued Conductances|Satoshi Kokado,Kikuo Harigaya###
(1347931, 1347931)
 In this paper, anideal SPS is considered as a single-wall armchair carbon nanotube encapsulatingmagnetic atoms, where the nanotube shows on-resonance or off-resonance at theFermi level according to its length.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 15, ',', 1]

SPS
###A Theoretical Study on Spin-Dependent Transport of "Ferromagnet/Carbon Nanotube Encapsulating Magnetic Atoms/Ferromagnet" Junctions with 4-Valued Conductances|Satoshi Kokado,Kikuo Harigaya###
(1347943, 1347945)
 In this paper, anideal SPS is considered as a single-wall armchair carbon nanotube encapsulatingmagnetic atoms, where the nanotube shows on-resonance or off-resonance at theFermi level according to its length.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 15, ',', 1]

Ga
###Rounding of a first-order magnetic phase transition in Ga doped La0.67Ca0.33MnO3|S. Roessler,U. K. Roessler,K. Nenkov,D. Eckert,S. M. Yusuf,K. Dorr,K. -H. Muller###
(1348164, 1348164)
Rounding of a first-order magnetic phase transition in Ga doped La0.67Ca0.33MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 10, '%', 2]

La0.67Ca0.33MnO3
###Rounding of a first-order magnetic phase transition in Ga doped La0.67Ca0.33MnO3|S. Roessler,U. K. Roessler,K. Nenkov,D. Eckert,S. M. Yusuf,K. Dorr,K. -H. Muller###
(1348168, 1348174)
Rounding of a first-order magnetic phase transition in Ga doped La0.67Ca0.33MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.066,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.134,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 10, '%', 2]

La0.67Ca0.33MnO3
###Rounding of a first-order magnetic phase transition in Ga doped La0.67Ca0.33MnO3|S. Roessler,U. K. Roessler,K. Nenkov,D. Eckert,S. M. Yusuf,K. Dorr,K. -H. Muller###
(1348212, 1348218)
 The effect of disorder on the critical properties of the ferromagnetic phasetransition in colossal magnetoresistive manganite La0.67Ca0.33MnO3 has beenstudied by substituting Ga for Mn.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.066,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.134,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 10, '%', 1]

Ga
###Rounding of a first-order magnetic phase transition in Ga doped La0.67Ca0.33MnO3|S. Roessler,U. K. Roessler,K. Nenkov,D. Eckert,S. M. Yusuf,K. Dorr,K. -H. Muller###
(1348231, 1348231)
 The effect of disorder on the critical properties of the ferromagnetic phasetransition in colossal magnetoresistive manganite La0.67Ca0.33MnO3 has beenstudied by substituting Ga for Mn.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 10, '%', 1]

Mn
###Rounding of a first-order magnetic phase transition in Ga doped La0.67Ca0.33MnO3|S. Roessler,U. K. Roessler,K. Nenkov,D. Eckert,S. M. Yusuf,K. Dorr,K. -H. Muller###
(1348235, 1348235)
 The effect of disorder on the critical properties of the ferromagnetic phasetransition in colossal magnetoresistive manganite La0.67Ca0.33MnO3 has beenstudied by substituting Ga for Mn.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 10, '%', 1]

Ga
###Rounding of a first-order magnetic phase transition in Ga doped La0.67Ca0.33MnO3|S. Roessler,U. K. Roessler,K. Nenkov,D. Eckert,S. M. Yusuf,K. Dorr,K. -H. Muller###
(1348252, 1348252)
 It is found that, upon 10% Ga substitution,the peak in the specific heat at the Curie point T<missing VAR>C changes drastically andappears as a small anomaly.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 10, '%', 0]

C
###Rounding of a first-order magnetic phase transition in Ga doped La0.67Ca0.33MnO3|S. Roessler,U. K. Roessler,K. Nenkov,D. Eckert,S. M. Yusuf,K. Dorr,K. -H. Muller###
(1348279, 1348279)
 It is found that, upon 10% Ga substitution,the peak in the specific heat at the Curie point T<missing VAR>C changes drastically andappears as a small anomaly.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 10, '%', 0]

La0.67Ca0.33MnO3
###Rounding of a first-order magnetic phase transition in Ga doped La0.67Ca0.33MnO3|S. Roessler,U. K. Roessler,K. Nenkov,D. Eckert,S. M. Yusuf,K. Dorr,K. -H. Muller###
(1348392, 1348398)
 The results show that the first-order transition inLa0.67Ca0.33MnO3 becomes continuous by Ga substitution.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.066,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.134,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 10, '%', 2]

Ga
###Rounding of a first-order magnetic phase transition in Ga doped La0.67Ca0.33MnO3|S. Roessler,U. K. Roessler,K. Nenkov,D. Eckert,S. M. Yusuf,K. Dorr,K. -H. Muller###
(1348406, 1348406)
 The results show that the first-order transition inLa0.67Ca0.33MnO3 becomes continuous by Ga substitution.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 10, '%', 2]

La0.67Ca0.33Mn0.9Ga0.1O3
###Rounding of a first-order magnetic phase transition in Ga doped La0.67Ca0.33MnO3|S. Roessler,U. K. Roessler,K. Nenkov,D. Eckert,S. M. Yusuf,K. Dorr,K. -H. Muller###
(1348428, 1348437)
 The critical propertiesof the rounded transition in La0.67Ca0.33Mn0.9Ga0.1O3 suggest that the magneticsubsystem in this mixed-valent perovskite is close to that of a conventionalisotropic ferromagnet belonging to the Heisenberg universality class withshort-range interactions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.066,0,0,0,0,0.18,0,0,0,0,0,0.02,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.134,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 10, '%', 3]

La0.67Ca0.33MnO3
###Rounding of a first-order magnetic phase transition in Ga doped La0.67Ca0.33MnO3|S. Roessler,U. K. Roessler,K. Nenkov,D. Eckert,S. M. Yusuf,K. Dorr,K. -H. Muller###
(1348524, 1348530)
 It is concluded that the first-order magnetictransition in pure La0.67Ca0.33MnO3 is induced by fluctuations from a competingmode, which couples to the magnetic subsystem.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.066,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.134,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[275.0, 10, '%', 4]

In
###Coexisting charge modulation and ferromagnetism produces long period phases in manganites: new example of electronic soft matter|G. C. Milward,M. J. Calderon,P. B. Littlewood###
(1348791, 1348791)
 In contrast to models where phase separation originatesfrom disorder or as a strain induced kinetic phenomenon, we argue that magneticand charge modulation coexist in new thermodynamic phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La1-x
###Low temperature synthesis, magnetic and magnetotransport properties of (La1-xLux)0.67Ca0.33MnO3 (0 < x < 0.12) system|D. Das,M. R. Raj,D. Bahadur,C. M. Srivastava,A. K. Nigam,S. K. Malik###
(1349069, 1349072)
Low temperature synthesis, magnetic and magnetotransport properties of (La1-xLux)0.67Ca0.33MnO3 (0 < x<missing VAR> < 0.12) system.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[238.0, 0.917, 'for', 5],[242.0, 0, 'to', 5],[243.0, 0.909, 'for', 5],[247.0, 0.12, 'and', 5],[354.0, 0, 'to', 7],[367.0, 0.0, 'All', 7],[401.0, 80, 'kOe', 7],[415.0, 5, 'to', 7],[416.0, 320, 'K', 7],[447.0, 30, '%', 8],[472.0, 5, 'kOe', 8]

Ca0.33MnO3
###Low temperature synthesis, magnetic and magnetotransport properties of (La1-xLux)0.67Ca0.33MnO3 (0 < x < 0.12) system|D. Das,M. R. Raj,D. Bahadur,C. M. Srivastava,A. K. Nigam,S. K. Malik###
(1349076, 1349080)
Low temperature synthesis, magnetic and magnetotransport properties of (La1-xLux)0.67Ca0.33MnO3 (0 < x<missing VAR> < 0.12) system.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6928406466512702,0,0,0,0,0,0,0,0,0,0,0,0.07621247113163973,0,0,0,0,0.23094688221709006,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[230.0, 0.917, 'for', 5],[234.0, 0, 'to', 5],[235.0, 0.909, 'for', 5],[239.0, 0.12, 'and', 5],[346.0, 0, 'to', 7],[359.0, 0.0, 'All', 7],[393.0, 80, 'kOe', 7],[407.0, 5, 'to', 7],[408.0, 320, 'K', 7],[439.0, 30, '%', 8],[464.0, 5, 'kOe', 8]

Lu3
###Low temperature synthesis, magnetic and magnetotransport properties of (La1-xLux)0.67Ca0.33MnO3 (0 < x < 0.12) system|D. Das,M. R. Raj,D. Bahadur,C. M. Srivastava,A. K. Nigam,S. K. Malik###
(1349109, 1349110)
 We have been able to synthesize Lu3 substituted La0.67Ca0.33MnO3 (LCMO) byan auto-combustion method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[200.0, 0.917, 'for', 4],[204.0, 0, 'to', 4],[205.0, 0.909, 'for', 4],[209.0, 0.12, 'and', 4],[316.0, 0, 'to', 6],[329.0, 0.0, 'All', 6],[363.0, 80, 'kOe', 6],[377.0, 5, 'to', 6],[378.0, 320, 'K', 6],[409.0, 30, '%', 7],[434.0, 5, 'kOe', 7]

La0.67Ca0.33MnO3
###Low temperature synthesis, magnetic and magnetotransport properties of (La1-xLux)0.67Ca0.33MnO3 (0 < x < 0.12) system|D. Das,M. R. Raj,D. Bahadur,C. M. Srivastava,A. K. Nigam,S. K. Malik###
(1349114, 1349120)
 We have been able to synthesize Lu3 substituted La0.67Ca0.33MnO3 (LCMO) byan auto-combustion method.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.066,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.134,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[190.0, 0.917, 'for', 4],[194.0, 0, 'to', 4],[195.0, 0.909, 'for', 4],[199.0, 0.12, 'and', 4],[306.0, 0, 'to', 6],[319.0, 0.0, 'All', 6],[353.0, 80, 'kOe', 6],[367.0, 5, 'to', 6],[368.0, 320, 'K', 6],[399.0, 30, '%', 7],[424.0, 5, 'kOe', 7]

O
###Low temperature synthesis, magnetic and magnetotransport properties of (La1-xLux)0.67Ca0.33MnO3 (0 < x < 0.12) system|D. Das,M. R. Raj,D. Bahadur,C. M. Srivastava,A. K. Nigam,S. K. Malik###
(1349126, 1349126)
 We have been able to synthesize Lu3 substituted La0.67Ca0.33MnO3 (LCMO) byan auto-combustion method.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[184.0, 0.917, 'for', 4],[188.0, 0, 'to', 4],[189.0, 0.909, 'for', 4],[193.0, 0.12, 'and', 4],[300.0, 0, 'to', 6],[313.0, 0.0, 'All', 6],[347.0, 80, 'kOe', 6],[361.0, 5, 'to', 6],[362.0, 320, 'K', 6],[393.0, 30, '%', 7],[418.0, 5, 'kOe', 7]

Lu
###Low temperature synthesis, magnetic and magnetotransport properties of (La1-xLux)0.67Ca0.33MnO3 (0 < x < 0.12) system|D. Das,M. R. Raj,D. Bahadur,C. M. Srivastava,A. K. Nigam,S. K. Malik###
(1349186, 1349186)
 Magnetic and electricaltransport properties of the Lu substituted LCMO [(La1-xLux)0.67Ca0.33MnO3 (0 <x<missing VAR> < 0.12)] system have been investigated and compared with those of the Y3,Pr3, Dy3 and Tb3 substituted LCMO systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 0.917, 'for', 2],[128.0, 0, 'to', 2],[129.0, 0.909, 'for', 2],[133.0, 0.12, 'and', 2],[240.0, 0, 'to', 4],[253.0, 0.0, 'All', 4],[287.0, 80, 'kOe', 4],[301.0, 5, 'to', 4],[302.0, 320, 'K', 4],[333.0, 30, '%', 5],[358.0, 5, 'kOe', 5]

O
###Low temperature synthesis, magnetic and magnetotransport properties of (La1-xLux)0.67Ca0.33MnO3 (0 < x < 0.12) system|D. Das,M. R. Raj,D. Bahadur,C. M. Srivastava,A. K. Nigam,S. K. Malik###
(1349193, 1349193)
 Magnetic and electricaltransport properties of the Lu substituted LCMO [(La1-xLux)0.67Ca0.33MnO3 (0 <x<missing VAR> < 0.12)] system have been investigated and compared with those of the Y3,Pr3, Dy3 and Tb3 substituted LCMO systems.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 0.917, 'for', 2],[121.0, 0, 'to', 2],[122.0, 0.909, 'for', 2],[126.0, 0.12, 'and', 2],[233.0, 0, 'to', 4],[246.0, 0.0, 'All', 4],[280.0, 80, 'kOe', 4],[294.0, 5, 'to', 4],[295.0, 320, 'K', 4],[326.0, 30, '%', 5],[351.0, 5, 'kOe', 5]

La1-x
###Low temperature synthesis, magnetic and magnetotransport properties of (La1-xLux)0.67Ca0.33MnO3 (0 < x < 0.12) system|D. Das,M. R. Raj,D. Bahadur,C. M. Srivastava,A. K. Nigam,S. K. Malik###
(1349197, 1349200)
 Magnetic and electricaltransport properties of the Lu substituted LCMO [(La1-xLux)0.67Ca0.33MnO3 (0 <x<missing VAR> < 0.12)] system have been investigated and compared with those of the Y3,Pr3, Dy3 and Tb3 substituted LCMO systems.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[110.0, 0.917, 'for', 2],[114.0, 0, 'to', 2],[115.0, 0.909, 'for', 2],[119.0, 0.12, 'and', 2],[226.0, 0, 'to', 4],[239.0, 0.0, 'All', 4],[273.0, 80, 'kOe', 4],[287.0, 5, 'to', 4],[288.0, 320, 'K', 4],[319.0, 30, '%', 5],[344.0, 5, 'kOe', 5]

Ca0.33MnO3
###Low temperature synthesis, magnetic and magnetotransport properties of (La1-xLux)0.67Ca0.33MnO3 (0 < x < 0.12) system|D. Das,M. R. Raj,D. Bahadur,C. M. Srivastava,A. K. Nigam,S. K. Malik###
(1349204, 1349208)
 Magnetic and electricaltransport properties of the Lu substituted LCMO [(La1-xLux)0.67Ca0.33MnO3 (0 <x<missing VAR> < 0.12)] system have been investigated and compared with those of the Y3,Pr3, Dy3 and Tb3 substituted LCMO systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6928406466512702,0,0,0,0,0,0,0,0,0,0,0,0.07621247113163973,0,0,0,0,0.23094688221709006,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 0.917, 'for', 2],[106.0, 0, 'to', 2],[107.0, 0.909, 'for', 2],[111.0, 0.12, 'and', 2],[218.0, 0, 'to', 4],[231.0, 0.0, 'All', 4],[265.0, 80, 'kOe', 4],[279.0, 5, 'to', 4],[280.0, 320, 'K', 4],[311.0, 30, '%', 5],[336.0, 5, 'kOe', 5]

Y3
###Low temperature synthesis, magnetic and magnetotransport properties of (La1-xLux)0.67Ca0.33MnO3 (0 < x < 0.12) system|D. Das,M. R. Raj,D. Bahadur,C. M. Srivastava,A. K. Nigam,S. K. Malik###
(1349244, 1349245)
 Magnetic and electricaltransport properties of the Lu substituted LCMO [(La1-xLux)0.67Ca0.33MnO3 (0 <x<missing VAR> < 0.12)] system have been investigated and compared with those of the Y3,Pr3, Dy3 and Tb3 substituted LCMO systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 0.917, 'for', 2],[69.0, 0, 'to', 2],[70.0, 0.909, 'for', 2],[74.0, 0.12, 'and', 2],[181.0, 0, 'to', 4],[194.0, 0.0, 'All', 4],[228.0, 80, 'kOe', 4],[242.0, 5, 'to', 4],[243.0, 320, 'K', 4],[274.0, 30, '%', 5],[299.0, 5, 'kOe', 5]

Pr3
###Low temperature synthesis, magnetic and magnetotransport properties of (La1-xLux)0.67Ca0.33MnO3 (0 < x < 0.12) system|D. Das,M. R. Raj,D. Bahadur,C. M. Srivastava,A. K. Nigam,S. K. Malik###
(1349249, 1349250)
 Magnetic and electricaltransport properties of the Lu substituted LCMO [(La1-xLux)0.67Ca0.33MnO3 (0 <x<missing VAR> < 0.12)] system have been investigated and compared with those of the Y3,Pr3, Dy3 and Tb3 substituted LCMO systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 0.917, 'for', 2],[64.0, 0, 'to', 2],[65.0, 0.909, 'for', 2],[69.0, 0.12, 'and', 2],[176.0, 0, 'to', 4],[189.0, 0.0, 'All', 4],[223.0, 80, 'kOe', 4],[237.0, 5, 'to', 4],[238.0, 320, 'K', 4],[269.0, 30, '%', 5],[294.0, 5, 'kOe', 5]

Dy3
###Low temperature synthesis, magnetic and magnetotransport properties of (La1-xLux)0.67Ca0.33MnO3 (0 < x < 0.12) system|D. Das,M. R. Raj,D. Bahadur,C. M. Srivastava,A. K. Nigam,S. K. Malik###
(1349253, 1349254)
 Magnetic and electricaltransport properties of the Lu substituted LCMO [(La1-xLux)0.67Ca0.33MnO3 (0 <x<missing VAR> < 0.12)] system have been investigated and compared with those of the Y3,Pr3, Dy3 and Tb3 substituted LCMO systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 0.917, 'for', 2],[60.0, 0, 'to', 2],[61.0, 0.909, 'for', 2],[65.0, 0.12, 'and', 2],[172.0, 0, 'to', 4],[185.0, 0.0, 'All', 4],[219.0, 80, 'kOe', 4],[233.0, 5, 'to', 4],[234.0, 320, 'K', 4],[265.0, 30, '%', 5],[290.0, 5, 'kOe', 5]

Tb3
###Low temperature synthesis, magnetic and magnetotransport properties of (La1-xLux)0.67Ca0.33MnO3 (0 < x < 0.12) system|D. Das,M. R. Raj,D. Bahadur,C. M. Srivastava,A. K. Nigam,S. K. Malik###
(1349258, 1349259)
 Magnetic and electricaltransport properties of the Lu substituted LCMO [(La1-xLux)0.67Ca0.33MnO3 (0 <x<missing VAR> < 0.12)] system have been investigated and compared with those of the Y3,Pr3, Dy3 and Tb3 substituted LCMO systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 0.917, 'for', 2],[55.0, 0, 'to', 2],[56.0, 0.909, 'for', 2],[60.0, 0.12, 'and', 2],[167.0, 0, 'to', 4],[180.0, 0.0, 'All', 4],[214.0, 80, 'kOe', 4],[228.0, 5, 'to', 4],[229.0, 320, 'K', 4],[260.0, 30, '%', 5],[285.0, 5, 'kOe', 5]

O
###Low temperature synthesis, magnetic and magnetotransport properties of (La1-xLux)0.67Ca0.33MnO3 (0 < x < 0.12) system|D. Das,M. R. Raj,D. Bahadur,C. M. Srivastava,A. K. Nigam,S. K. Malik###
(1349266, 1349266)
 Magnetic and electricaltransport properties of the Lu substituted LCMO [(La1-xLux)0.67Ca0.33MnO3 (0 <x<missing VAR> < 0.12)] system have been investigated and compared with those of the Y3,Pr3, Dy3 and Tb3 substituted LCMO systems.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 0.917, 'for', 2],[48.0, 0, 'to', 2],[49.0, 0.909, 'for', 2],[53.0, 0.12, 'and', 2],[160.0, 0, 'to', 4],[173.0, 0.0, 'All', 4],[207.0, 80, 'kOe', 4],[221.0, 5, 'to', 4],[222.0, 320, 'K', 4],[253.0, 30, '%', 5],[278.0, 5, 'kOe', 5]

C
###Low temperature synthesis, magnetic and magnetotransport properties of (La1-xLux)0.67Ca0.33MnO3 (0 < x < 0.12) system|D. Das,M. R. Raj,D. Bahadur,C. M. Srivastava,A. K. Nigam,S. K. Malik###
(1349297, 1349297)
 All the compounds show aferromagnetic metal to paramagnetic insulator transition at T<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 0.917, 'for', 1],[17.0, 0, 'to', 1],[18.0, 0.909, 'for', 1],[22.0, 0.12, 'and', 1],[129.0, 0, 'to', 3],[142.0, 0.0, 'All', 3],[176.0, 80, 'kOe', 3],[190.0, 5, 'to', 3],[191.0, 320, 'K', 3],[222.0, 30, '%', 4],[247.0, 5, 'kOe', 4]

Lu
###Low temperature synthesis, magnetic and magnetotransport properties of (La1-xLux)0.67Ca0.33MnO3 (0 < x < 0.12) system|D. Das,M. R. Raj,D. Bahadur,C. M. Srivastava,A. K. Nigam,S. K. Malik###
(1349389, 1349389)
 The transition temperatures and magnetization decrease as the Luconcentration increases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 0.917, 'for', 1],[75.0, 0, 'to', 1],[74.0, 0.909, 'for', 1],[70.0, 0.12, 'and', 1],[37.0, 0, 'to', 1],[50.0, 0.0, 'All', 1],[84.0, 80, 'kOe', 1],[98.0, 5, 'to', 1],[99.0, 320, 'K', 1],[130.0, 30, '%', 2],[155.0, 5, 'kOe', 2]

O
###Low temperature synthesis, magnetic and magnetotransport properties of (La1-xLux)0.67Ca0.33MnO3 (0 < x < 0.12) system|D. Das,M. R. Raj,D. Bahadur,C. M. Srivastava,A. K. Nigam,S. K. Malik###
(1349470, 1349470)
 This is satisfactorily accounted for on the basis oftransition from ferromagnetic at x<missing VAR>  0 to canted spin order for x<missing VAR> > 0. All thesamples show higher magnitude of MR compared to that in pure LCMO at 80 kOefield in the temperature range of 5 to 320K.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 0.917, 'for', 2],[156.0, 0, 'to', 2],[155.0, 0.909, 'for', 2],[151.0, 0.12, 'and', 2],[44.0, 0, 'to', 0],[31.0, 0.0, 'All', 0],[3.0, 80, 'kOe', 0],[17.0, 5, 'to', 0],[18.0, 320, 'K', 0],[49.0, 30, '%', 1],[74.0, 5, 'kOe', 1]

In
###Irreversible spin-transfer and magnetization reversal under spin-injection|J. -E. Wegrowe,H. -J. Drouhin###
(1349574, 1349574)
 In the context of spin electronics, the two spin-channel model assumes thatthe spin carriers are composed of two distinct populations the conductionelectrons of spin up, and the conduction electrons of spin down.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Irreversible spin-transfer and magnetization reversal under spin-injection|J. -E. Wegrowe,H. -J. Drouhin###
(1349649, 1349649)
 In order todistinguish the paramagnetic and ferromagnetic contributions in spin injection,we describe the current injection with four channels  the two spin populationsof the conduction bands (s<missing VAR> or paramagnetic) and the two spin populations ofthe more correlated electrons (d<missing VAR> or ferromagnetic).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La2-xSr
###Spin reorientation and in-plane magnetoresistance of lightly doped La_{2-x}Sr_{x}CuO_{4} in magnetic fields up to 55 T|S. Ono,Seiki Komiya,A. N. Lavrov,Yoichi Ando,F. F. Balakirev,J. B. Betts,G. S. Boebinger###
(1350075, 1350079)
Spin reorientation and in-plane magnetoresistance of lightly doped La2-xSrx<missing VAR>CuO4 in magnetic fields up to 55 T.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[15.0, 55, 'T', 0],[51.0, 55, 'T', 1],[162.0, 0.01, ',', 3],[211.0, 20, 'T', 3],[360.0, 20, '%', 4],[374.0, 40, 'T', 4]

CuO4
###Spin reorientation and in-plane magnetoresistance of lightly doped La_{2-x}Sr_{x}CuO_{4} in magnetic fields up to 55 T|S. Ono,Seiki Komiya,A. N. Lavrov,Yoichi Ando,F. F. Balakirev,J. B. Betts,G. S. Boebinger###
(1350081, 1350083)
Spin reorientation and in-plane magnetoresistance of lightly doped La2-xSrx<missing VAR>CuO4 in magnetic fields up to 55 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 55, 'T', 0],[47.0, 55, 'T', 1],[158.0, 0.01, ',', 3],[207.0, 20, 'T', 3],[356.0, 20, '%', 4],[370.0, 40, 'T', 4]

La2-xSr
###Spin reorientation and in-plane magnetoresistance of lightly doped La_{2-x}Sr_{x}CuO_{4} in magnetic fields up to 55 T|S. Ono,Seiki Komiya,A. N. Lavrov,Yoichi Ando,F. F. Balakirev,J. B. Betts,G. S. Boebinger###
(1350138, 1350142)
 The magnetoresistance (MR) in the in-plane resistivity is measured inmagnetic fields up to 55 T in lightly doped La2-xSrx<missing VAR>CuO4 in the Neelstate (x<missing VAR>  0.01) and in the spin-glass state (x<missing VAR>  0.03) using high-qualityuntwinned single crystals.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[44.0, 55, 'T', 1],[8.0, 55, 'T', 0],[99.0, 0.01, ',', 2],[148.0, 20, 'T', 2],[297.0, 20, '%', 3],[311.0, 40, 'T', 3]

CuO4
###Spin reorientation and in-plane magnetoresistance of lightly doped La_{2-x}Sr_{x}CuO_{4} in magnetic fields up to 55 T|S. Ono,Seiki Komiya,A. N. Lavrov,Yoichi Ando,F. F. Balakirev,J. B. Betts,G. S. Boebinger###
(1350144, 1350146)
 The magnetoresistance (MR) in the in-plane resistivity is measured inmagnetic fields up to 55 T in lightly doped La2-xSrx<missing VAR>CuO4 in the Neelstate (x<missing VAR>  0.01) and in the spin-glass state (x<missing VAR>  0.03) using high-qualityuntwinned single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 55, 'T', 1],[14.0, 55, 'T', 0],[95.0, 0.01, ',', 2],[144.0, 20, 'T', 2],[293.0, 20, '%', 3],[307.0, 40, 'T', 3]

N
###Spin reorientation and in-plane magnetoresistance of lightly doped La_{2-x}Sr_{x}CuO_{4} in magnetic fields up to 55 T|S. Ono,Seiki Komiya,A. N. Lavrov,Yoichi Ando,F. F. Balakirev,J. B. Betts,G. S. Boebinger###
(1350152, 1350152)
 The magnetoresistance (MR) in the in-plane resistivity is measured inmagnetic fields up to 55 T in lightly doped La2-xSrx<missing VAR>CuO4 in the Neelstate (x<missing VAR>  0.01) and in the spin-glass state (x<missing VAR>  0.03) using high-qualityuntwinned single crystals.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 55, 'T', 1],[22.0, 55, 'T', 0],[89.0, 0.01, ',', 2],[138.0, 20, 'T', 2],[287.0, 20, '%', 3],[301.0, 40, 'T', 3]

In
###Spin reorientation and in-plane magnetoresistance of lightly doped La_{2-x}Sr_{x}CuO_{4} in magnetic fields up to 55 T|S. Ono,Seiki Komiya,A. N. Lavrov,Yoichi Ando,F. F. Balakirev,J. B. Betts,G. S. Boebinger###
(1350198, 1350198)
 In both cases, a large negative MR is observed toappear when the magnetic order is established.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 55, 'T', 2],[68.0, 55, 'T', 1],[43.0, 0.01, ',', 1],[92.0, 20, 'T', 1],[241.0, 20, '%', 2],[255.0, 40, 'T', 2]

N
###Spin reorientation and in-plane magnetoresistance of lightly doped La_{2-x}Sr_{x}CuO_{4} in magnetic fields up to 55 T|S. Ono,Seiki Komiya,A. N. Lavrov,Yoichi Ando,F. F. Balakirev,J. B. Betts,G. S. Boebinger###
(1350345, 1350345)
 For x<missing VAR>  0.01, it is found thatthe MR is indicative of a one-step transition into a high-fieldweak-ferromagnetic state at around 20 T when the magnetic field is applied fromthe spin easy axis (b<missing VAR> axis), which means that there is no spin-flop transitionin the Neel state of this material; this is contrary to a previous report,but is natural in light of the peculiar in-plane magnetic susceptibilityanisotropy recently found in this system.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[251.0, 55, 'T', 3],[215.0, 55, 'T', 2],[104.0, 0.01, ',', 0],[55.0, 20, 'T', 0],[94.0, 20, '%', 1],[108.0, 40, 'T', 1]

In
###Spin reorientation and in-plane magnetoresistance of lightly doped La_{2-x}Sr_{x}CuO_{4} in magnetic fields up to 55 T|S. Ono,Seiki Komiya,A. N. Lavrov,Yoichi Ando,F. F. Balakirev,J. B. Betts,G. S. Boebinger###
(1350411, 1350411)
 In the spin-glass state, we observethat the large (up to sim20%) negative MR saturates at around 40 T, and thisMR is found to be essentially isotropic when the magnetic field is rotatedwithin the ab plane.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[317.0, 55, 'T', 4],[281.0, 55, 'T', 3],[170.0, 0.01, ',', 1],[121.0, 20, 'T', 1],[28.0, 20, '%', 0],[42.0, 40, 'T', 0]

SCO
###Spin reorientation and in-plane magnetoresistance of lightly doped La_{2-x}Sr_{x}CuO_{4} in magnetic fields up to 55 T|S. Ono,Seiki Komiya,A. N. Lavrov,Yoichi Ando,F. F. Balakirev,J. B. Betts,G. S. Boebinger###
(1350523, 1350525)
 Our data show that the large negative MR is inherent toL<missing VAR>SCO in a magnetically ordered state, in which the weak-ferromagnetic (WF)moment becomes well-defined; we discuss that the observed MR is essentially dueto the reorientation of the WF moments towards the magnetic field directionboth in the Neel state and in the spin-glass state.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[429.0, 55, 'T', 5],[393.0, 55, 'T', 4],[282.0, 0.01, ',', 2],[233.0, 20, 'T', 2],[84.0, 20, '%', 1],[70.0, 40, 'T', 1]

(WF)
###Spin reorientation and in-plane magnetoresistance of lightly doped La_{2-x}Sr_{x}CuO_{4} in magnetic fields up to 55 T|S. Ono,Seiki Komiya,A. N. Lavrov,Yoichi Ando,F. F. Balakirev,J. B. Betts,G. S. Boebinger###
(1350548, 1350551)
 Our data show that the large negative MR is inherent toL<missing VAR>SCO in a magnetically ordered state, in which the weak-ferromagnetic (WF)moment becomes well-defined; we discuss that the observed MR is essentially dueto the reorientation of the WF moments towards the magnetic field directionboth in the Neel state and in the spin-glass state.
Featurization successful!
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[454.0, 55, 'T', 5],[418.0, 55, 'T', 4],[307.0, 0.01, ',', 2],[258.0, 20, 'T', 2],[109.0, 20, '%', 1],[95.0, 40, 'T', 1]

WF
###Spin reorientation and in-plane magnetoresistance of lightly doped La_{2-x}Sr_{x}CuO_{4} in magnetic fields up to 55 T|S. Ono,Seiki Komiya,A. N. Lavrov,Yoichi Ando,F. F. Balakirev,J. B. Betts,G. S. Boebinger###
(1350593, 1350594)
 Our data show that the large negative MR is inherent toL<missing VAR>SCO in a magnetically ordered state, in which the weak-ferromagnetic (WF)moment becomes well-defined; we discuss that the observed MR is essentially dueto the reorientation of the WF moments towards the magnetic field directionboth in the Neel state and in the spin-glass state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[499.0, 55, 'T', 5],[463.0, 55, 'T', 4],[352.0, 0.01, ',', 2],[303.0, 20, 'T', 2],[154.0, 20, '%', 1],[140.0, 40, 'T', 1]

N
###Spin reorientation and in-plane magnetoresistance of lightly doped La_{2-x}Sr_{x}CuO_{4} in magnetic fields up to 55 T|S. Ono,Seiki Komiya,A. N. Lavrov,Yoichi Ando,F. F. Balakirev,J. B. Betts,G. S. Boebinger###
(1350615, 1350615)
 Our data show that the large negative MR is inherent toL<missing VAR>SCO in a magnetically ordered state, in which the weak-ferromagnetic (WF)moment becomes well-defined; we discuss that the observed MR is essentially dueto the reorientation of the WF moments towards the magnetic field directionboth in the Neel state and in the spin-glass state.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[521.0, 55, 'T', 5],[485.0, 55, 'T', 4],[374.0, 0.01, ',', 2],[325.0, 20, 'T', 2],[176.0, 20, '%', 1],[162.0, 40, 'T', 1]

N
###Realization of an N-shaped IVC of nanoscale metallic junctions using the antiferromagnetic transition|Yu. G. Naidyuk,K. Gloos,I. K. Yanson###
(1350647, 1350647)
Realization of an N-shaped IVC of nanoscale metallic junctions using the antiferromagnetic transition.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[239.0, 14, 'K', 4],[442.0, 1, 'ns', 10]

IVC
###Realization of an N-shaped IVC of nanoscale metallic junctions using the antiferromagnetic transition|Yu. G. Naidyuk,K. Gloos,I. K. Yanson###
(1350651, 1350653)
Realization of an N-shaped IVC of nanoscale metallic junctions using the antiferromagnetic transition.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[233.0, 14, 'K', 4],[436.0, 1, 'ns', 10]

K
###Realization of an N-shaped IVC of nanoscale metallic junctions using the antiferromagnetic transition|Yu. G. Naidyuk,K. Gloos,I. K. Yanson###
(1350687, 1350687)
 We have observed at low temperatures (<8K) hysteretic I(V) characteristicsfor sub-mkm (200nm) metallic break-junctions based on the heavy-fermioncompound UPd2Al3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[199.0, 14, 'K', 3],[402.0, 1, 'ns', 9]

I(V)
###Realization of an N-shaped IVC of nanoscale metallic junctions using the antiferromagnetic transition|Yu. G. Naidyuk,K. Gloos,I. K. Yanson###
(1350692, 1350695)
 We have observed at low temperatures (<8K) hysteretic I(V) characteristicsfor sub-mkm (200nm) metallic break-junctions based on the heavy-fermioncompound UPd2Al3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[191.0, 14, 'K', 3],[394.0, 1, 'ns', 9]

UPd2Al3
###Realization of an N-shaped IVC of nanoscale metallic junctions using the antiferromagnetic transition|Yu. G. Naidyuk,K. Gloos,I. K. Yanson###
(1350730, 1350734)
 We have observed at low temperatures (<8K) hysteretic I(V) characteristicsfor sub-mkm (200nm) metallic break-junctions based on the heavy-fermioncompound UPd2Al3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0
[152.0, 14, 'K', 3],[355.0, 1, 'ns', 9]

I(V)
###Realization of an N-shaped IVC of nanoscale metallic junctions using the antiferromagnetic transition|Yu. G. Naidyuk,K. Gloos,I. K. Yanson###
(1350790, 1350793)
 Wedemonstrate that those hysteretic I(V) curves can be reproduced theoreticallyby assuming the constriction to be in the thermal regime.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 14, 'K', 1],[296.0, 1, 'ns', 7]

I(V)
###Realization of an N-shaped IVC of nanoscale metallic junctions using the antiferromagnetic transition|Yu. G. Naidyuk,K. Gloos,I. K. Yanson###
(1350840, 1350843)
 Our calculations showthat such anomalous I(V) curves are due to the sharp increase of rho(T) ofUPd2Al3 near the Neel temperature T<missing VAR>N  14K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 14, 'K', 0],[246.0, 1, 'ns', 6]

UPd2Al3
###Realization of an N-shaped IVC of nanoscale metallic junctions using the antiferromagnetic transition|Yu. G. Naidyuk,K. Gloos,I. K. Yanson###
(1350869, 1350873)
 Our calculations showthat such anomalous I(V) curves are due to the sharp increase of rho(T) ofUPd2Al3 near the Neel temperature T<missing VAR>N  14K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0
[13.0, 14, 'K', 0],[216.0, 1, 'ns', 6]

N
###Realization of an N-shaped IVC of nanoscale metallic junctions using the antiferromagnetic transition|Yu. G. Naidyuk,K. Gloos,I. K. Yanson###
(1350884, 1350884)
 Our calculations showthat such anomalous I(V) curves are due to the sharp increase of rho(T) ofUPd2Al3 near the Neel temperature T<missing VAR>N  14K.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 14, 'K', 0],[205.0, 1, 'ns', 6]

I(V)
###Realization of an N-shaped IVC of nanoscale metallic junctions using the antiferromagnetic transition|Yu. G. Naidyuk,K. Gloos,I. K. Yanson###
(1350921, 1350924)
 From this point of view each metalwith similar rho(T) should produce similar hysteretic I(V) curves.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 14, 'K', 1],[165.0, 1, 'ns', 5]

As
###Realization of an N-shaped IVC of nanoscale metallic junctions using the antiferromagnetic transition|Yu. G. Naidyuk,K. Gloos,I. K. Yanson###
(1350929, 1350929)
 As examplewe show calculations for the rare-earth manganite La0.75Sr0.25MnO3, asystem with colossal magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 14, 'K', 2],[160.0, 1, 'ns', 4]

La0.75Sr0.25MnO3
###Realization of an N-shaped IVC of nanoscale metallic junctions using the antiferromagnetic transition|Yu. G. Naidyuk,K. Gloos,I. K. Yanson###
(1350950, 1350956)
 As examplewe show calculations for the rare-earth manganite La0.75Sr0.25MnO3, asystem with colossal magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.05,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 14, 'K', 2],[133.0, 1, 'ns', 4]

In
###Realization of an N-shaped IVC of nanoscale metallic junctions using the antiferromagnetic transition|Yu. G. Naidyuk,K. Gloos,I. K. Yanson###
(1350971, 1350971)
 In this way we demonstrate thatnano-sized point contacts can be non-linear devices with N-shaped I(V)characteristics, i<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 14, 'K', 3],[118.0, 1, 'ns', 3]

N
###Realization of an N-shaped IVC of nanoscale metallic junctions using the antiferromagnetic transition|Yu. G. Naidyuk,K. Gloos,I. K. Yanson###
(1351004, 1351004)
 In this way we demonstrate thatnano-sized point contacts can be non-linear devices with N-shaped I(V)characteristics, i<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 14, 'K', 3],[85.0, 1, 'ns', 3]

I(V)
###Realization of an N-shaped IVC of nanoscale metallic junctions using the antiferromagnetic transition|Yu. G. Naidyuk,K. Gloos,I. K. Yanson###
(1351008, 1351011)
 In this way we demonstrate thatnano-sized point contacts can be non-linear devices with N-shaped I(V)characteristics, i<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 14, 'K', 3],[78.0, 1, 'ns', 3]

Dy7Rh3
###Large magnetoresistance anomalies in Dy7Rh3|Kausik Sengupta,S. Rayaprol,E. V. Sampathkumaran###
(1351116, 1351119)
Large magnetoresistance anomalies in Dy7Rh3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 59, 'K', 1],[212.0, 300, 'K', 3],[251.0, 60, 'kOe', 4],[325.0, 80, 'kOe', 5]

Dy7Rh3
###Large magnetoresistance anomalies in Dy7Rh3|Kausik Sengupta,S. Rayaprol,E. V. Sampathkumaran###
(1351126, 1351129)
 The compound Dy7Rh3 ordering antiferromagnetically below (T<missing VAR>N) 59 K has beenknown to exhibit a temperature (T) dependent electrical resistivity (rho)behavior in the paramagnetic state unusual for intermetallic compounds in thesense that there is a broad peak in rho(T) in the paramagnetic state (around130 K) as though there is a semi-conductor to metal transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 59, 'K', 0],[202.0, 300, 'K', 2],[241.0, 60, 'kOe', 3],[315.0, 80, 'kOe', 4]

N
###Large magnetoresistance anomalies in Dy7Rh3|Kausik Sengupta,S. Rayaprol,E. V. Sampathkumaran###
(1351139, 1351139)
 The compound Dy7Rh3 ordering antiferromagnetically below (T<missing VAR>N) 59 K has beenknown to exhibit a temperature (T) dependent electrical resistivity (rho)behavior in the paramagnetic state unusual for intermetallic compounds in thesense that there is a broad peak in rho(T) in the paramagnetic state (around130 K) as though there is a semi-conductor to metal transition.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 59, 'K', 0],[192.0, 300, 'K', 2],[231.0, 60, 'kOe', 3],[305.0, 80, 'kOe', 4]

K
###Large magnetoresistance anomalies in Dy7Rh3|Kausik Sengupta,S. Rayaprol,E. V. Sampathkumaran###
(1351231, 1351231)
 The compound Dy7Rh3 ordering antiferromagnetically below (T<missing VAR>N) 59 K has beenknown to exhibit a temperature (T) dependent electrical resistivity (rho)behavior in the paramagnetic state unusual for intermetallic compounds in thesense that there is a broad peak in rho(T) in the paramagnetic state (around130 K) as though there is a semi-conductor to metal transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 59, 'K', 0],[100.0, 300, 'K', 2],[139.0, 60, 'kOe', 3],[213.0, 80, 'kOe', 4]

In
###Large magnetoresistance anomalies in Dy7Rh3|Kausik Sengupta,S. Rayaprol,E. V. Sampathkumaran###
(1351255, 1351255)
 In addition,there is an upturn below T<missing VAR>N due to magnetic super-zone gap effects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 59, 'K', 1],[76.0, 300, 'K', 1],[115.0, 60, 'kOe', 2],[189.0, 80, 'kOe', 3]

N
###Large magnetoresistance anomalies in Dy7Rh3|Kausik Sengupta,S. Rayaprol,E. V. Sampathkumaran###
(1351272, 1351272)
 In addition,there is an upturn below T<missing VAR>N due to magnetic super-zone gap effects.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 59, 'K', 1],[59.0, 300, 'K', 1],[98.0, 60, 'kOe', 2],[172.0, 80, 'kOe', 3]

(H)
###Large magnetoresistance anomalies in Dy7Rh3|Kausik Sengupta,S. Rayaprol,E. V. Sampathkumaran###
(1351308, 1351310)
 Here wereport the influence of external magnetic field (H) on the rho(T) behavior ofthis compound below 300 K.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 59, 'K', 2],[21.0, 300, 'K', 0],[60.0, 60, 'kOe', 1],[134.0, 80, 'kOe', 2]

N
###Large magnetoresistance anomalies in Dy7Rh3|Kausik Sengupta,S. Rayaprol,E. V. Sampathkumaran###
(1351350, 1351350)
 The rise of rho(T) found below T<missing VAR>N could besuppressed at very high fields (>> 60 kOe), thus resulting in a very largemagnetoresistance (MR) in the magnetically ordered state.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[209.0, 59, 'K', 3],[19.0, 300, 'K', 1],[20.0, 60, 'kOe', 0],[94.0, 80, 'kOe', 1]

H
###Large magnetoresistance anomalies in Dy7Rh3|Kausik Sengupta,S. Rayaprol,E. V. Sampathkumaran###
(1351439, 1351439)
 The most notablefinding is that the magnitude of MR is large for moderate applications of H(say 80 kOe) in a temperature range far above T<missing VAR>N as well, which is untypicalof intermetallic compounds.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[298.0, 59, 'K', 4],[108.0, 300, 'K', 2],[69.0, 60, 'kOe', 1],[5.0, 80, 'kOe', 0]

N
###Large magnetoresistance anomalies in Dy7Rh3|Kausik Sengupta,S. Rayaprol,E. V. Sampathkumaran###
(1351460, 1351460)
 The most notablefinding is that the magnitude of MR is large for moderate applications of H(say 80 kOe) in a temperature range far above T<missing VAR>N as well, which is untypicalof intermetallic compounds.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[319.0, 59, 'K', 4],[129.0, 300, 'K', 2],[90.0, 60, 'kOe', 1],[16.0, 80, 'kOe', 0]

Nd2-xCe
###Spin-Charge Coupling in lightly doped Nd$_{2-x}$Ce$_{x}$CuO$_4$|Shiliang Li,Stephen D. Wilson,David Mandrus,Bairu Zhao,Y. Onose,Y. Tokura,Pengcheng Dai###
(1351537, 1351541)
Spin-Charge Coupling in lightly doped Nd2-xCex<missing VAR>CuO4.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

CuO4
###Spin-Charge Coupling in lightly doped Nd$_{2-x}$Ce$_{x}$CuO$_4$|Shiliang Li,Stephen D. Wilson,David Mandrus,Bairu Zhao,Y. Onose,Y. Tokura,Pengcheng Dai###
(1351543, 1351545)
Spin-Charge Coupling in lightly doped Nd2-xCex<missing VAR>CuO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nd2CuO4
###Spin-Charge Coupling in lightly doped Nd$_{2-x}$Ce$_{x}$CuO$_4$|Shiliang Li,Stephen D. Wilson,David Mandrus,Bairu Zhao,Y. Onose,Y. Tokura,Pengcheng Dai###
(1351581, 1351585)
 We use neutron scattering to study the influence of a magnetic field on spinstructures of Nd2CuO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nd2CuO4
###Spin-Charge Coupling in lightly doped Nd$_{2-x}$Ce$_{x}$CuO$_4$|Shiliang Li,Stephen D. Wilson,David Mandrus,Bairu Zhao,Y. Onose,Y. Tokura,Pengcheng Dai###
(1351599, 1351603)
 On cooling from room temperature, Nd2CuO4goes through a series of antiferromagnetic (AF) phase transitions withdifferent noncollinear spin structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Spin-Charge Coupling in lightly doped Nd$_{2-x}$Ce$_{x}$CuO$_4$|Shiliang Li,Stephen D. Wilson,David Mandrus,Bairu Zhao,Y. Onose,Y. Tokura,Pengcheng Dai###
(1351620, 1351620)
 On cooling from room temperature, Nd2CuO4goes through a series of antiferromagnetic (AF) phase transitions withdifferent noncollinear spin structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CuO2
###Spin-Charge Coupling in lightly doped Nd$_{2-x}$Ce$_{x}$CuO$_4$|Shiliang Li,Stephen D. Wilson,David Mandrus,Bairu Zhao,Y. Onose,Y. Tokura,Pengcheng Dai###
(1351686, 1351688)
 While a c<missing VAR>-axis aligned magnetic fielddoes not alter the basic zero-field noncollinear spin structures, a fieldparallel to the CuO2 plane can transform the noncollinear structure to acollinear one (spin-flop transition), induce magnetic disorder along thec<missing VAR>-axis, and cause hysteresis in the AF phase transitions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Spin-Charge Coupling in lightly doped Nd$_{2-x}$Ce$_{x}$CuO$_4$|Shiliang Li,Stephen D. Wilson,David Mandrus,Bairu Zhao,Y. Onose,Y. Tokura,Pengcheng Dai###
(1351747, 1351747)
 While a c<missing VAR>-axis aligned magnetic fielddoes not alter the basic zero-field noncollinear spin structures, a fieldparallel to the CuO2 plane can transform the noncollinear structure to acollinear one (spin-flop transition), induce magnetic disorder along thec<missing VAR>-axis, and cause hysteresis in the AF phase transitions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nd1.975Ce0.025CuO4
###Spin-Charge Coupling in lightly doped Nd$_{2-x}$Ce$_{x}$CuO$_4$|Shiliang Li,Stephen D. Wilson,David Mandrus,Bairu Zhao,Y. Onose,Y. Tokura,Pengcheng Dai###
(1351781, 1351787)
 By comparing theseresults directly to the magnetoresistance (MR) measurements ofNd1.975Ce0.025CuO4, which has essentially the same AF structuresas Nd2CuO4, we find that a magnetic-field-induced spin-flop transition,AF phase hysteresis, and spin c<missing VAR>-axis disorder all affect the transportproperties of the material.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.0035714285714285718,0,0.28214285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Spin-Charge Coupling in lightly doped Nd$_{2-x}$Ce$_{x}$CuO$_4$|Shiliang Li,Stephen D. Wilson,David Mandrus,Bairu Zhao,Y. Onose,Y. Tokura,Pengcheng Dai###
(1351801, 1351801)
 By comparing theseresults directly to the magnetoresistance (MR) measurements ofNd1.975Ce0.025CuO4, which has essentially the same AF structuresas Nd2CuO4, we find that a magnetic-field-induced spin-flop transition,AF phase hysteresis, and spin c<missing VAR>-axis disorder all affect the transportproperties of the material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nd2CuO4
###Spin-Charge Coupling in lightly doped Nd$_{2-x}$Ce$_{x}$CuO$_4$|Shiliang Li,Stephen D. Wilson,David Mandrus,Bairu Zhao,Y. Onose,Y. Tokura,Pengcheng Dai###
(1351808, 1351812)
 By comparing theseresults directly to the magnetoresistance (MR) measurements ofNd1.975Ce0.025CuO4, which has essentially the same AF structuresas Nd2CuO4, we find that a magnetic-field-induced spin-flop transition,AF phase hysteresis, and spin c<missing VAR>-axis disorder all affect the transportproperties of the material.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Spin-Charge Coupling in lightly doped Nd$_{2-x}$Ce$_{x}$CuO$_4$|Shiliang Li,Stephen D. Wilson,David Mandrus,Bairu Zhao,Y. Onose,Y. Tokura,Pengcheng Dai###
(1351838, 1351838)
 By comparing theseresults directly to the magnetoresistance (MR) measurements ofNd1.975Ce0.025CuO4, which has essentially the same AF structuresas Nd2CuO4, we find that a magnetic-field-induced spin-flop transition,AF phase hysteresis, and spin c<missing VAR>-axis disorder all affect the transportproperties of the material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2
###Metal-to-insulator crossover and pseudogap in single-layer compound Bi$_{2+x}$Sr$_{2-x}$Cu$_{1+y}$O$_{6+δ}$ single crystals in high magnetic fields|S. I. Vedeneev,D. K. Maude###
(1351943, 1351944)
Metal-to-insulator crossover and pseudogap in single-layer compound Bi2x<missing VAR>Sr2-xCu1y<missing VAR>O6 single crystals in high magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 28, 'T', 1],[135.0, 40, 'mK', 1],[292.0, 3, 'D', 3],[496.0, 86, ',', 10],[499.0, 5763, ',', 10]

Sr2-xCu1
###Metal-to-insulator crossover and pseudogap in single-layer compound Bi$_{2+x}$Sr$_{2-x}$Cu$_{1+y}$O$_{6+δ}$ single crystals in high magnetic fields|S. I. Vedeneev,D. K. Maude###
(1351946, 1351951)
Metal-to-insulator crossover and pseudogap in single-layer compound Bi2x<missing VAR>Sr2-xCu1y<missing VAR>O6 single crystals in high magnetic fields.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[60.0, 28, 'T', 1],[128.0, 40, 'mK', 1],[285.0, 3, 'D', 3],[489.0, 86, ',', 10],[492.0, 5763, ',', 10]

O6
###Metal-to-insulator crossover and pseudogap in single-layer compound Bi$_{2+x}$Sr$_{2-x}$Cu$_{1+y}$O$_{6+δ}$ single crystals in high magnetic fields|S. I. Vedeneev,D. K. Maude###
(1351953, 1351954)
Metal-to-insulator crossover and pseudogap in single-layer compound Bi2x<missing VAR>Sr2-xCu1y<missing VAR>O6 single crystals in high magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 28, 'T', 1],[125.0, 40, 'mK', 1],[282.0, 3, 'D', 3],[486.0, 86, ',', 10],[489.0, 5763, ',', 10]

(H)
###Metal-to-insulator crossover and pseudogap in single-layer compound Bi$_{2+x}$Sr$_{2-x}$Cu$_{1+y}$O$_{6+δ}$ single crystals in high magnetic fields|S. I. Vedeneev,D. K. Maude###
(1351977, 1351979)
 The in-plane rhoab(H) and the out-of-plane rhoc<missing VAR>(H)magneto-transport in magnetic fields up to 28 T has been investigated in aseries of high quality, single crystal, hole-doped La-free Bi2201 cuprates fora wide doping range and over a wide range of temperatures down to 40 mK.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 28, 'T', 0],[100.0, 40, 'mK', 0],[257.0, 3, 'D', 2],[461.0, 86, ',', 9],[464.0, 5763, ',', 9]

(H)
###Metal-to-insulator crossover and pseudogap in single-layer compound Bi$_{2+x}$Sr$_{2-x}$Cu$_{1+y}$O$_{6+δ}$ single crystals in high magnetic fields|S. I. Vedeneev,D. K. Maude###
(1351993, 1351995)
 The in-plane rhoab(H) and the out-of-plane rhoc<missing VAR>(H)magneto-transport in magnetic fields up to 28 T has been investigated in aseries of high quality, single crystal, hole-doped La-free Bi2201 cuprates fora wide doping range and over a wide range of temperatures down to 40 mK.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 28, 'T', 0],[84.0, 40, 'mK', 0],[241.0, 3, 'D', 2],[445.0, 86, ',', 9],[448.0, 5763, ',', 9]

La
###Metal-to-insulator crossover and pseudogap in single-layer compound Bi$_{2+x}$Sr$_{2-x}$Cu$_{1+y}$O$_{6+δ}$ single crystals in high magnetic fields|S. I. Vedeneev,D. K. Maude###
(1352042, 1352042)
 The in-plane rhoab(H) and the out-of-plane rhoc<missing VAR>(H)magneto-transport in magnetic fields up to 28 T has been investigated in aseries of high quality, single crystal, hole-doped La-free Bi2201 cuprates fora wide doping range and over a wide range of temperatures down to 40 mK.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 28, 'T', 0],[37.0, 40, 'mK', 0],[194.0, 3, 'D', 2],[398.0, 86, ',', 9],[401.0, 5763, ',', 9]

Bi2201
###Metal-to-insulator crossover and pseudogap in single-layer compound Bi$_{2+x}$Sr$_{2-x}$Cu$_{1+y}$O$_{6+δ}$ single crystals in high magnetic fields|S. I. Vedeneev,D. K. Maude###
(1352046, 1352047)
 The in-plane rhoab(H) and the out-of-plane rhoc<missing VAR>(H)magneto-transport in magnetic fields up to 28 T has been investigated in aseries of high quality, single crystal, hole-doped La-free Bi2201 cuprates fora wide doping range and over a wide range of temperatures down to 40 mK.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 28, 'T', 0],[32.0, 40, 'mK', 0],[189.0, 3, 'D', 2],[393.0, 86, ',', 9],[396.0, 5763, ',', 9]

In
###Metal-to-insulator crossover and pseudogap in single-layer compound Bi$_{2+x}$Sr$_{2-x}$Cu$_{1+y}$O$_{6+δ}$ single crystals in high magnetic fields|S. I. Vedeneev,D. K. Maude###
(1352181, 1352181)
 In the zerotemperature limit, the normal state ratio rhoc<missing VAR>(H)/rhoab(H) of theheavily underdoped samples in pure Bi2201 shows an anisotropic 3D behavior, instriking contrast with that observed in La-doped Bi2201 and L<missing VAR>SCO systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[170.0, 28, 'T', 2],[102.0, 40, 'mK', 2],[55.0, 3, 'D', 0],[259.0, 86, ',', 7],[262.0, 5763, ',', 7]

(H)
###Metal-to-insulator crossover and pseudogap in single-layer compound Bi$_{2+x}$Sr$_{2-x}$Cu$_{1+y}$O$_{6+δ}$ single crystals in high magnetic fields|S. I. Vedeneev,D. K. Maude###
(1352203, 1352205)
 In the zerotemperature limit, the normal state ratio rhoc<missing VAR>(H)/rhoab(H) of theheavily underdoped samples in pure Bi2201 shows an anisotropic 3D behavior, instriking contrast with that observed in La-doped Bi2201 and L<missing VAR>SCO systems.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[192.0, 28, 'T', 2],[124.0, 40, 'mK', 2],[31.0, 3, 'D', 0],[235.0, 86, ',', 7],[238.0, 5763, ',', 7]

(H)
###Metal-to-insulator crossover and pseudogap in single-layer compound Bi$_{2+x}$Sr$_{2-x}$Cu$_{1+y}$O$_{6+δ}$ single crystals in high magnetic fields|S. I. Vedeneev,D. K. Maude###
(1352209, 1352211)
 In the zerotemperature limit, the normal state ratio rhoc<missing VAR>(H)/rhoab(H) of theheavily underdoped samples in pure Bi2201 shows an anisotropic 3D behavior, instriking contrast with that observed in La-doped Bi2201 and L<missing VAR>SCO systems.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[198.0, 28, 'T', 2],[130.0, 40, 'mK', 2],[25.0, 3, 'D', 0],[229.0, 86, ',', 7],[232.0, 5763, ',', 7]

Bi2201
###Metal-to-insulator crossover and pseudogap in single-layer compound Bi$_{2+x}$Sr$_{2-x}$Cu$_{1+y}$O$_{6+δ}$ single crystals in high magnetic fields|S. I. Vedeneev,D. K. Maude###
(1352228, 1352229)
 In the zerotemperature limit, the normal state ratio rhoc<missing VAR>(H)/rhoab(H) of theheavily underdoped samples in pure Bi2201 shows an anisotropic 3D behavior, instriking contrast with that observed in La-doped Bi2201 and L<missing VAR>SCO systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[217.0, 28, 'T', 2],[149.0, 40, 'mK', 2],[7.0, 3, 'D', 0],[211.0, 86, ',', 7],[214.0, 5763, ',', 7]

La
###Metal-to-insulator crossover and pseudogap in single-layer compound Bi$_{2+x}$Sr$_{2-x}$Cu$_{1+y}$O$_{6+δ}$ single crystals in high magnetic fields|S. I. Vedeneev,D. K. Maude###
(1352256, 1352256)
 In the zerotemperature limit, the normal state ratio rhoc<missing VAR>(H)/rhoab(H) of theheavily underdoped samples in pure Bi2201 shows an anisotropic 3D behavior, instriking contrast with that observed in La-doped Bi2201 and L<missing VAR>SCO systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[245.0, 28, 'T', 2],[177.0, 40, 'mK', 2],[20.0, 3, 'D', 0],[184.0, 86, ',', 7],[187.0, 5763, ',', 7]

Bi2201
###Metal-to-insulator crossover and pseudogap in single-layer compound Bi$_{2+x}$Sr$_{2-x}$Cu$_{1+y}$O$_{6+δ}$ single crystals in high magnetic fields|S. I. Vedeneev,D. K. Maude###
(1352260, 1352261)
 In the zerotemperature limit, the normal state ratio rhoc<missing VAR>(H)/rhoab(H) of theheavily underdoped samples in pure Bi2201 shows an anisotropic 3D behavior, instriking contrast with that observed in La-doped Bi2201 and L<missing VAR>SCO systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[249.0, 28, 'T', 2],[181.0, 40, 'mK', 2],[24.0, 3, 'D', 0],[179.0, 86, ',', 7],[182.0, 5763, ',', 7]

SCO
###Metal-to-insulator crossover and pseudogap in single-layer compound Bi$_{2+x}$Sr$_{2-x}$Cu$_{1+y}$O$_{6+δ}$ single crystals in high magnetic fields|S. I. Vedeneev,D. K. Maude###
(1352266, 1352268)
 In the zerotemperature limit, the normal state ratio rhoc<missing VAR>(H)/rhoab(H) of theheavily underdoped samples in pure Bi2201 shows an anisotropic 3D behavior, instriking contrast with that observed in La-doped Bi2201 and L<missing VAR>SCO systems.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[255.0, 28, 'T', 2],[187.0, 40, 'mK', 2],[30.0, 3, 'D', 0],[172.0, 86, ',', 7],[175.0, 5763, ',', 7]

(H)
###Metal-to-insulator crossover and pseudogap in single-layer compound Bi$_{2+x}$Sr$_{2-x}$Cu$_{1+y}$O$_{6+δ}$ single crystals in high magnetic fields|S. I. Vedeneev,D. K. Maude###
(1352383, 1352385)
 Both in the optimaland overdoped regimes, the semiconducting behavior of rhoc<missing VAR>(H) persists evenfor magnetic fields above the pseudogap closing field Hpg.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[372.0, 28, 'T', 4],[304.0, 40, 'mK', 4],[147.0, 3, 'D', 2],[55.0, 86, ',', 5],[58.0, 5763, ',', 5]

H
###Metal-to-insulator crossover and pseudogap in single-layer compound Bi$_{2+x}$Sr$_{2-x}$Cu$_{1+y}$O$_{6+δ}$ single crystals in high magnetic fields|S. I. Vedeneev,D. K. Maude###
(1352408, 1352408)
 Both in the optimaland overdoped regimes, the semiconducting behavior of rhoc<missing VAR>(H) persists evenfor magnetic fields above the pseudogap closing field Hpg.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[397.0, 28, 'T', 4],[329.0, 40, 'mK', 4],[172.0, 3, 'D', 2],[32.0, 86, ',', 5],[35.0, 5763, ',', 5]

H
###Metal-to-insulator crossover and pseudogap in single-layer compound Bi$_{2+x}$Sr$_{2-x}$Cu$_{1+y}$O$_{6+δ}$ single crystals in high magnetic fields|S. I. Vedeneev,D. K. Maude###
(1352456, 1352456)
 textbf86, 5763,(2001)) for evaluating Hpg is unsuccessful for both under- and overdopedBi2201 samples.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[445.0, 28, 'T', 9],[377.0, 40, 'mK', 9],[220.0, 3, 'D', 7],[16.0, 86, ',', 0],[13.0, 5763, ',', 0]

Bi2201
###Metal-to-insulator crossover and pseudogap in single-layer compound Bi$_{2+x}$Sr$_{2-x}$Cu$_{1+y}$O$_{6+δ}$ single crystals in high magnetic fields|S. I. Vedeneev,D. K. Maude###
(1352475, 1352476)
 textbf86, 5763,(2001)) for evaluating Hpg is unsuccessful for both under- and overdopedBi2201 samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[464.0, 28, 'T', 9],[396.0, 40, 'mK', 9],[239.0, 3, 'D', 7],[35.0, 86, ',', 0],[32.0, 5763, ',', 0]

PC
###Origin of Colossal Dielectric Response of Pr(0.6)Ca(0.4)MnO(3)|N. Biskup,A. de Andres,J. L. Martinez,C. Perca###
(1352582, 1352583)
 We report the detailed study of dielectric response of Pr(0.6)Ca(0.4)MnO(3)(PCM<missing VAR>O), member of manganite family showing colossal magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 30, ',', 2],[127.0, 20, 'Hz', 3],[202.0, 1000, 'until', 5],[203.0, 100000.0, 'The', 5]

O
###Origin of Colossal Dielectric Response of Pr(0.6)Ca(0.4)MnO(3)|N. Biskup,A. de Andres,J. L. Martinez,C. Perca###
(1352585, 1352585)
 We report the detailed study of dielectric response of Pr(0.6)Ca(0.4)MnO(3)(PCM<missing VAR>O), member of manganite family showing colossal magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 30, ',', 2],[125.0, 20, 'Hz', 3],[200.0, 1000, 'until', 5],[201.0, 100000.0, 'The', 5]

K
###Origin of Colossal Dielectric Response of Pr(0.6)Ca(0.4)MnO(3)|N. Biskup,A. de Andres,J. L. Martinez,C. Perca###
(1352725, 1352725)
 Dielectric relaxation is found infrequency window of 20Hz-1M<missing VAR>Hz at temperatures of 50-200K that yields tocolossal low-frequency dielectric function, i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 30, ',', 1],[15.0, 20, 'Hz', 0],[60.0, 1000, 'until', 2],[61.0, 100000.0, 'The', 2]

PC
###Origin of Colossal Dielectric Response of Pr(0.6)Ca(0.4)MnO(3)|N. Biskup,A. de Andres,J. L. Martinez,C. Perca###
(1352843, 1352844)
 This indicates that the large dielectric constant in PCM<missing VAR>O arisesfrom the Schottky barriers at electrical contacts.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 30, ',', 4],[133.0, 20, 'Hz', 3],[58.0, 1000, 'until', 1],[57.0, 100000.0, 'The', 1]

O
###Origin of Colossal Dielectric Response of Pr(0.6)Ca(0.4)MnO(3)|N. Biskup,A. de Andres,J. L. Martinez,C. Perca###
(1352846, 1352846)
 This indicates that the large dielectric constant in PCM<missing VAR>O arisesfrom the Schottky barriers at electrical contacts.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 30, ',', 4],[136.0, 20, 'Hz', 3],[61.0, 1000, 'until', 1],[60.0, 100000.0, 'The', 1]

CeOs4Sb12
###Transport properties in CeOs$_{4}$Sb$_{12}$: Possibility of the ground state being semiconducting|H. Sugawara,S. Osaki,M. Kobayashi,T. Namiki,S. R. Saha,Y. Aoki,H. Sato###
(1352974, 1352978)
Transport properties in CeOs4Sb12 Possibility of the ground state being semiconducting.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7058823529411765,0,0,0,0,0,0,0.058823529411764705,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23529411764705882,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 0.9, 'K', 1],[283.0, 14, 'T', 3],[341.0, 0.3, 'K', 5]

CeOs4Sb12
###Transport properties in CeOs$_{4}$Sb$_{12}$: Possibility of the ground state being semiconducting|H. Sugawara,S. Osaki,M. Kobayashi,T. Namiki,S. R. Saha,Y. Aoki,H. Sato###
(1353013, 1353017)
 We have measured both magnetoresistance and Hall effect in CeOs4Sb12to clarify the large resistivity state ascribed to the Kondo insulating one andthe origin of the phase transition near 0.9 K reported in the specific heatmeasurement.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7058823529411765,0,0,0,0,0,0,0.058823529411764705,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23529411764705882,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 0.9, 'K', 0],[244.0, 14, 'T', 2],[302.0, 0.3, 'K', 4]

H
###Transport properties in CeOs$_{4}$Sb$_{12}$: Possibility of the ground state being semiconducting|H. Sugawara,S. Osaki,M. Kobayashi,T. Namiki,S. R. Saha,Y. Aoki,H. Sato###
(1353122, 1353122)
 We found unusual temperature (T) dependence both in theelectrical resistivity rhosim T<missing VAR>-1/2 and the Hall coefficient R<missing VAR>rmHsim T<missing VAR>rm -1 over the wide temperature range of about two order ofmagnitude below sim30 K, which can be explained as a combined effect of thetemperature dependences of carrier density and carrier scattering by spinfluctuation.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 0.9, 'K', 1],[139.0, 14, 'T', 1],[197.0, 0.3, 'K', 3]

K
###Transport properties in CeOs$_{4}$Sb$_{12}$: Possibility of the ground state being semiconducting|H. Sugawara,S. Osaki,M. Kobayashi,T. Namiki,S. R. Saha,Y. Aoki,H. Sato###
(1353159, 1353159)
 We found unusual temperature (T) dependence both in theelectrical resistivity rhosim T<missing VAR>-1/2 and the Hall coefficient R<missing VAR>rmHsim T<missing VAR>rm -1 over the wide temperature range of about two order ofmagnitude below sim30 K, which can be explained as a combined effect of thetemperature dependences of carrier density and carrier scattering by spinfluctuation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 0.9, 'K', 1],[102.0, 14, 'T', 1],[160.0, 0.3, 'K', 3]

H
###Transport properties in CeOs$_{4}$Sb$_{12}$: Possibility of the ground state being semiconducting|H. Sugawara,S. Osaki,M. Kobayashi,T. Namiki,S. R. Saha,Y. Aoki,H. Sato###
(1353245, 1353245)
 An anomaly related with the phase transition has been clearlyobserved in the transport properties, from which the H-T<missing VAR> phase diagram isdetermined up to 14 T.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[185.0, 0.9, 'K', 2],[16.0, 14, 'T', 0],[74.0, 0.3, 'K', 2]

In
###Orbital polarons versus itinerant e_g electrons in doped manganites|M. Daghofer,A. M. Oles,W. von der Linden###
(1353947, 1353947)
 In adoped system it competes with the kinetic energy prop.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 3, 'z', 1],[139.0, 3, 'z', 3],[232.0, 1, 'D', 4],[261.0, 1, 'D', 5]

At
###Orbital polarons versus itinerant e_g electrons in doped manganites|M. Daghofer,A. M. Oles,W. von der Linden###
(1354190, 1354190)
 At finitetemperature we derive and investigate an effective 1D orbital model using acombination of exact diagonalization with classical Monte-Carlo for spincorrelations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[252.0, 3, 'z', 6],[104.0, 3, 'z', 2],[11.0, 1, 'D', 1],[18.0, 1, 'D', 0]

CPP
###Current induced magnetization switching in exchange biased spin-valves for CPP-GMR heads|A. Deac,K. J. Lee,Y. Liu,O. Redon,M. Li,P. Wang,J. P. Nozieres,B. Dieny###
(1354415, 1354417)
Current induced magnetization switching in exchange biased spin-valves for CPP-GMR heads.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 130, 'nm', 1]

In
###Current induced magnetization switching in exchange biased spin-valves for CPP-GMR heads|A. Deac,K. J. Lee,Y. Liu,O. Redon,M. Li,P. Wang,J. P. Nozieres,B. Dieny###
(1354426, 1354426)
 In contrast to earlier studies performed on simple Co/Cu/Co sandwiches, wehave investigated spin transfer effects in complex spin-valve pillars with adiameter of 130nm developed for current-perpendicular to the plane (CPP)magneto-resistive heads.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 130, 'nm', 0]

Co/Cu/Co
###Current induced magnetization switching in exchange biased spin-valves for CPP-GMR heads|A. Deac,K. J. Lee,Y. Liu,O. Redon,M. Li,P. Wang,J. P. Nozieres,B. Dieny###
(1354442, 1354446)
 In contrast to earlier studies performed on simple Co/Cu/Co sandwiches, wehave investigated spin transfer effects in complex spin-valve pillars with adiameter of 130nm developed for current-perpendicular to the plane (CPP)magneto-resistive heads.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[36.0, 130, 'nm', 0]

(CPP)
###Current induced magnetization switching in exchange biased spin-valves for CPP-GMR heads|A. Deac,K. J. Lee,Y. Liu,O. Redon,M. Li,P. Wang,J. P. Nozieres,B. Dieny###
(1354498, 1354502)
 In contrast to earlier studies performed on simple Co/Cu/Co sandwiches, wehave investigated spin transfer effects in complex spin-valve pillars with adiameter of 130nm developed for current-perpendicular to the plane (CPP)magneto-resistive heads.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 130, 'nm', 0]

Cu
###Current induced magnetization switching in exchange biased spin-valves for CPP-GMR heads|A. Deac,K. J. Lee,Y. Liu,O. Redon,M. Li,P. Wang,J. P. Nozieres,B. Dieny###
(1354560, 1354560)
 The structure of the samples included an exchangebiased synthetic pinned layer and a free layer both laminated by insertion ofseveral ultrathin Cu layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 130, 'nm', 1]

(P)
###Current induced magnetization switching in exchange biased spin-valves for CPP-GMR heads|A. Deac,K. J. Lee,Y. Liu,O. Redon,M. Li,P. Wang,J. P. Nozieres,B. Dieny###
(1354610, 1354612)
 Despite the small thickness of the polarizinglayer, our results show that the free layer can be switched between theparallel (P) and the antiparallel (AP) states by applying current densities ofthe order of 107 A/cm2.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 130, 'nm', 2]

P
###Current induced magnetization switching in exchange biased spin-valves for CPP-GMR heads|A. Deac,K. J. Lee,Y. Liu,O. Redon,M. Li,P. Wang,J. P. Nozieres,B. Dieny###
(1354622, 1354622)
 Despite the small thickness of the polarizinglayer, our results show that the free layer can be switched between theparallel (P) and the antiparallel (AP) states by applying current densities ofthe order of 107 A/cm2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 130, 'nm', 2]

P
###Current induced magnetization switching in exchange biased spin-valves for CPP-GMR heads|A. Deac,K. J. Lee,Y. Liu,O. Redon,M. Li,P. Wang,J. P. Nozieres,B. Dieny###
(1354676, 1354676)
 A strong asymmetry is observed between the twocritical currents IcAP-P and IcP-AP, as predicted by the model of Slonczewskimodel.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[194.0, 130, 'nm', 3]

P
###Current induced magnetization switching in exchange biased spin-valves for CPP-GMR heads|A. Deac,K. J. Lee,Y. Liu,O. Redon,M. Li,P. Wang,J. P. Nozieres,B. Dieny###
(1354678, 1354678)
 A strong asymmetry is observed between the twocritical currents IcAP-P and IcP-AP, as predicted by the model of Slonczewskimodel.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[196.0, 130, 'nm', 3]

P
###Current induced magnetization switching in exchange biased spin-valves for CPP-GMR heads|A. Deac,K. J. Lee,Y. Liu,O. Redon,M. Li,P. Wang,J. P. Nozieres,B. Dieny###
(1354683, 1354683)
 A strong asymmetry is observed between the twocritical currents IcAP-P and IcP-AP, as predicted by the model of Slonczewskimodel.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[201.0, 130, 'nm', 3]

P
###Current induced magnetization switching in exchange biased spin-valves for CPP-GMR heads|A. Deac,K. J. Lee,Y. Liu,O. Redon,M. Li,P. Wang,J. P. Nozieres,B. Dieny###
(1354686, 1354686)
 A strong asymmetry is observed between the twocritical currents IcAP-P and IcP-AP, as predicted by the model of Slonczewskimodel.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[204.0, 130, 'nm', 3]

H
###Current induced magnetization switching in exchange biased spin-valves for CPP-GMR heads|A. Deac,K. J. Lee,Y. Liu,O. Redon,M. Li,P. Wang,J. P. Nozieres,B. Dieny###
(1354752, 1354752)
 Thanks to the use of exchange biased structures, the stability phasediagrams could be obtained in the four quadrants of the (H, I) plan.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[270.0, 130, 'nm', 4]

I
###Current induced magnetization switching in exchange biased spin-valves for CPP-GMR heads|A. Deac,K. J. Lee,Y. Liu,O. Redon,M. Li,P. Wang,J. P. Nozieres,B. Dieny###
(1354755, 1354755)
 Thanks to the use of exchange biased structures, the stability phasediagrams could be obtained in the four quadrants of the (H, I) plan.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[273.0, 130, 'nm', 4]

Na0.48CoO2
###Angular-dependent Magnetoresistance Oscillations in Na$_{0.48}$CoO$_{2}$ Single Crystal|F. Hu,G. T. Liu,J. L. Luo,D. Wu,N. L. Wang,T. Xiang###
(1355003, 1355007)
Angular-dependent Magnetoresistance Oscillations in Na0.48CoO2 Single Crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5747126436781609,0,0,0.13793103448275862,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.28735632183908044,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 10, 'T', 1],[185.0, 25, 'K', 3]

Na0.48CoO2
###Angular-dependent Magnetoresistance Oscillations in Na$_{0.48}$CoO$_{2}$ Single Crystal|F. Hu,G. T. Liu,J. L. Luo,D. Wu,N. L. Wang,T. Xiang###
(1355045, 1355049)
 We report measurements of the c<missing VAR>-axis angular-dependent magnetoresistance(AMR) for a Na0.48CoO2 single crystal, with a magnetic field of 10 Trotating within Co-O planes.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5747126436781609,0,0,0.13793103448275862,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.28735632183908044,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 10, 'T', 0],[143.0, 25, 'K', 2]

Co
###Angular-dependent Magnetoresistance Oscillations in Na$_{0.48}$CoO$_{2}$ Single Crystal|F. Hu,G. T. Liu,J. L. Luo,D. Wu,N. L. Wang,T. Xiang###
(1355072, 1355072)
 We report measurements of the c<missing VAR>-axis angular-dependent magnetoresistance(AMR) for a Na0.48CoO2 single crystal, with a magnetic field of 10 Trotating within Co-O planes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 10, 'T', 0],[120.0, 25, 'K', 2]

O
###Angular-dependent Magnetoresistance Oscillations in Na$_{0.48}$CoO$_{2}$ Single Crystal|F. Hu,G. T. Liu,J. L. Luo,D. Wu,N. L. Wang,T. Xiang###
(1355074, 1355074)
 We report measurements of the c<missing VAR>-axis angular-dependent magnetoresistance(AMR) for a Na0.48CoO2 single crystal, with a magnetic field of 10 Trotating within Co-O planes.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 10, 'T', 0],[118.0, 25, 'K', 2]

Co
###Angular-dependent Magnetoresistance Oscillations in Na$_{0.48}$CoO$_{2}$ Single Crystal|F. Hu,G. T. Liu,J. L. Luo,D. Wu,N. L. Wang,T. Xiang###
(1355262, 1355262)
, that the Co lattice in the charge ordered state willsplit into two orthorhombic sublattice with one occupied by Co3 ions andthe other by Co4 ions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[197.0, 10, 'T', 5],[70.0, 25, 'K', 3]

Co3
###Angular-dependent Magnetoresistance Oscillations in Na$_{0.48}$CoO$_{2}$ Single Crystal|F. Hu,G. T. Liu,J. L. Luo,D. Wu,N. L. Wang,T. Xiang###
(1355297, 1355298)
, that the Co lattice in the charge ordered state willsplit into two orthorhombic sublattice with one occupied by Co3 ions andthe other by Co4 ions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[232.0, 10, 'T', 5],[105.0, 25, 'K', 3]

Co4
###Angular-dependent Magnetoresistance Oscillations in Na$_{0.48}$CoO$_{2}$ Single Crystal|F. Hu,G. T. Liu,J. L. Luo,D. Wu,N. L. Wang,T. Xiang###
(1355311, 1355312)
, that the Co lattice in the charge ordered state willsplit into two orthorhombic sublattice with one occupied by Co3 ions andthe other by Co4 ions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[246.0, 10, 'T', 5],[119.0, 25, 'K', 3]

Na0.35CoO2
###Angular-dependent Magnetoresistance Oscillations in Na$_{0.48}$CoO$_{2}$ Single Crystal|F. Hu,G. T. Liu,J. L. Luo,D. Wu,N. L. Wang,T. Xiang###
(1355338, 1355342)
 We have also measured the c<missing VAR>-axis AMR forNa0.35CoO2 and Na0.85CoO2 single crystals, and found noevidence for the existence of two- and four-fold symmetries.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5970149253731343,0,0,0.1044776119402985,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.29850746268656714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[273.0, 10, 'T', 6],[146.0, 25, 'K', 4]

Na0.85CoO2
###Angular-dependent Magnetoresistance Oscillations in Na$_{0.48}$CoO$_{2}$ Single Crystal|F. Hu,G. T. Liu,J. L. Luo,D. Wu,N. L. Wang,T. Xiang###
(1355346, 1355350)
 We have also measured the c<missing VAR>-axis AMR forNa0.35CoO2 and Na0.85CoO2 single crystals, and found noevidence for the existence of two- and four-fold symmetries.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5194805194805194,0,0,0.22077922077922077,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2597402597402597,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[281.0, 10, 'T', 6],[154.0, 25, 'K', 4]

C
###A new method for direct rf power absorption studies in CMR materials and high T_c superconductors|S. Sarangi,S. V. Bhat###
(1355414, 1355414)
A new method for direct rf power absorption studies in CMR materials and high Tc superconductors.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[247.0, 1, 'MHz', 5],[267.0, 74, 'LS', 5],[282.0, 4.2, 'to', 6],[298.0, 0, 'to', 6],[299.0, 1.4, 'T', 6]

C
###A new method for direct rf power absorption studies in CMR materials and high T_c superconductors|S. Sarangi,S. V. Bhat###
(1355471, 1355471)
 The design, fabrication and performance of an apparatus for the measurementof direct rf power absorption in colossal magnetoresistive (CMR) andsuperconducting samples are described.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[190.0, 1, 'MHz', 4],[210.0, 74, 'LS', 4],[225.0, 4.2, 'to', 5],[241.0, 0, 'to', 5],[242.0, 1.4, 'T', 5]

C
###A new method for direct rf power absorption studies in CMR materials and high T_c superconductors|S. Sarangi,S. V. Bhat###
(1355504, 1355504)
 The system consists of a self-resonantL<missing VAR>C tank circuit of an oscillator driven by a NOT<missing VAR> logic gate.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 1, 'MHz', 3],[177.0, 74, 'LS', 3],[192.0, 4.2, 'to', 4],[208.0, 0, 'to', 4],[209.0, 1.4, 'T', 4]

NO
###A new method for direct rf power absorption studies in CMR materials and high T_c superconductors|S. Sarangi,S. V. Bhat###
(1355522, 1355523)
 The system consists of a self-resonantL<missing VAR>C tank circuit of an oscillator driven by a NOT<missing VAR> logic gate.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 1, 'MHz', 3],[158.0, 74, 'LS', 3],[173.0, 4.2, 'to', 4],[189.0, 0, 'to', 4],[190.0, 1.4, 'T', 4]

IC
###A new method for direct rf power absorption studies in CMR materials and high T_c superconductors|S. Sarangi,S. V. Bhat###
(1355679, 1355680)
 The oscillator working in the rf range between 1 MHz to25 M<missing VAR>Hz is built around an IC 74LS04.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 1, 'MHz', 0],[1.0, 74, 'LS', 0],[16.0, 4.2, 'to', 1],[32.0, 0, 'to', 1],[33.0, 1.4, 'T', 1]

K
###A new method for direct rf power absorption studies in CMR materials and high T_c superconductors|S. Sarangi,S. V. Bhat###
(1355701, 1355701)
 The temperature can be varied from 4.2 to400 K and the magnetic field from 0 to 1.4 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 1, 'MHz', 1],[20.0, 74, 'LS', 1],[5.0, 4.2, 'to', 0],[11.0, 0, 'to', 0],[12.0, 1.4, 'T', 0]

C
###A new method for direct rf power absorption studies in CMR materials and high T_c superconductors|S. Sarangi,S. V. Bhat###
(1355737, 1355737)
 The apparatus is capable ofmeasuring direct power absorption in CMR and superconducting samples of volumeas small as 1/1000 cm3 with a signal to noise ratio of 101.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 1, 'MHz', 2],[56.0, 74, 'LS', 2],[41.0, 4.2, 'to', 1],[25.0, 0, 'to', 1],[24.0, 1.4, 'T', 1]

La0.7
###A new method for direct rf power absorption studies in CMR materials and high T_c superconductors|S. Sarangi,S. V. Bhat###
(1355849, 1355850)
 The system performance isevaluated by measuring the absorbed power in La0.7 Sr0.3 MnO3 (LSMO) CMRmanganite samples and superconducting Y Ba2 Cu3 O7 (YBCO) samples atdifferent rf frequencies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 1, 'MHz', 4],[168.0, 74, 'LS', 4],[153.0, 4.2, 'to', 3],[137.0, 0, 'to', 3],[136.0, 1.4, 'T', 3]

Sr0.3
###A new method for direct rf power absorption studies in CMR materials and high T_c superconductors|S. Sarangi,S. V. Bhat###
(1355852, 1355853)
 The system performance isevaluated by measuring the absorbed power in La0.7 Sr0.3 MnO3 (LSMO) CMRmanganite samples and superconducting Y Ba2 Cu3 O7 (YBCO) samples atdifferent rf frequencies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[191.0, 1, 'MHz', 4],[171.0, 74, 'LS', 4],[156.0, 4.2, 'to', 3],[140.0, 0, 'to', 3],[139.0, 1.4, 'T', 3]

MnO3
###A new method for direct rf power absorption studies in CMR materials and high T_c superconductors|S. Sarangi,S. V. Bhat###
(1355855, 1355857)
 The system performance isevaluated by measuring the absorbed power in La0.7 Sr0.3 MnO3 (LSMO) CMRmanganite samples and superconducting Y Ba2 Cu3 O7 (YBCO) samples atdifferent rf frequencies.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[194.0, 1, 'MHz', 4],[174.0, 74, 'LS', 4],[159.0, 4.2, 'to', 3],[143.0, 0, 'to', 3],[142.0, 1.4, 'T', 3]

O
###A new method for direct rf power absorption studies in CMR materials and high T_c superconductors|S. Sarangi,S. V. Bhat###
(1355863, 1355863)
 The system performance isevaluated by measuring the absorbed power in La0.7 Sr0.3 MnO3 (LSMO) CMRmanganite samples and superconducting Y Ba2 Cu3 O7 (YBCO) samples atdifferent rf frequencies.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[202.0, 1, 'MHz', 4],[182.0, 74, 'LS', 4],[167.0, 4.2, 'to', 3],[151.0, 0, 'to', 3],[150.0, 1.4, 'T', 3]

C
###A new method for direct rf power absorption studies in CMR materials and high T_c superconductors|S. Sarangi,S. V. Bhat###
(1355866, 1355866)
 The system performance isevaluated by measuring the absorbed power in La0.7 Sr0.3 MnO3 (LSMO) CMRmanganite samples and superconducting Y Ba2 Cu3 O7 (YBCO) samples atdifferent rf frequencies.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, 1, 'MHz', 4],[185.0, 74, 'LS', 4],[170.0, 4.2, 'to', 3],[154.0, 0, 'to', 3],[153.0, 1.4, 'T', 3]

Y
###A new method for direct rf power absorption studies in CMR materials and high T_c superconductors|S. Sarangi,S. V. Bhat###
(1355879, 1355879)
 The system performance isevaluated by measuring the absorbed power in La0.7 Sr0.3 MnO3 (LSMO) CMRmanganite samples and superconducting Y Ba2 Cu3 O7 (YBCO) samples atdifferent rf frequencies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[218.0, 1, 'MHz', 4],[198.0, 74, 'LS', 4],[183.0, 4.2, 'to', 3],[167.0, 0, 'to', 3],[166.0, 1.4, 'T', 3]

Ba2
###A new method for direct rf power absorption studies in CMR materials and high T_c superconductors|S. Sarangi,S. V. Bhat###
(1355881, 1355882)
 The system performance isevaluated by measuring the absorbed power in La0.7 Sr0.3 MnO3 (LSMO) CMRmanganite samples and superconducting Y Ba2 Cu3 O7 (YBCO) samples atdifferent rf frequencies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[220.0, 1, 'MHz', 4],[200.0, 74, 'LS', 4],[185.0, 4.2, 'to', 3],[169.0, 0, 'to', 3],[168.0, 1.4, 'T', 3]

Cu3
###A new method for direct rf power absorption studies in CMR materials and high T_c superconductors|S. Sarangi,S. V. Bhat###
(1355884, 1355885)
 The system performance isevaluated by measuring the absorbed power in La0.7 Sr0.3 MnO3 (LSMO) CMRmanganite samples and superconducting Y Ba2 Cu3 O7 (YBCO) samples atdifferent rf frequencies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[223.0, 1, 'MHz', 4],[203.0, 74, 'LS', 4],[188.0, 4.2, 'to', 3],[172.0, 0, 'to', 3],[171.0, 1.4, 'T', 3]

O7
###A new method for direct rf power absorption studies in CMR materials and high T_c superconductors|S. Sarangi,S. V. Bhat###
(1355887, 1355888)
 The system performance isevaluated by measuring the absorbed power in La0.7 Sr0.3 MnO3 (LSMO) CMRmanganite samples and superconducting Y Ba2 Cu3 O7 (YBCO) samples atdifferent rf frequencies.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[226.0, 1, 'MHz', 4],[206.0, 74, 'LS', 4],[191.0, 4.2, 'to', 3],[175.0, 0, 'to', 3],[174.0, 1.4, 'T', 3]

(YBCO)
###A new method for direct rf power absorption studies in CMR materials and high T_c superconductors|S. Sarangi,S. V. Bhat###
(1355890, 1355895)
 The system performance isevaluated by measuring the absorbed power in La0.7 Sr0.3 MnO3 (LSMO) CMRmanganite samples and superconducting Y Ba2 Cu3 O7 (YBCO) samples atdifferent rf frequencies.
Featurization successful!
0,0,0,0,0.25,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[229.0, 1, 'MHz', 4],[209.0, 74, 'LS', 4],[194.0, 4.2, 'to', 3],[178.0, 0, 'to', 3],[177.0, 1.4, 'T', 3]

Co/Cu
###Impurity scattering and quantum confinement in giant magnetoresistance systems|Peter Zahn,Jörg Binder,Ingrid Mertig###
(1356018, 1356020)
 Ab initio calculations for the giant magnetoresistance (GMR) in Co/Cu, Fe/Cr,and Fe/Au multilayers are presented.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Fe/Cr
###Impurity scattering and quantum confinement in giant magnetoresistance systems|Peter Zahn,Jörg Binder,Ingrid Mertig###
(1356023, 1356025)
 Ab initio calculations for the giant magnetoresistance (GMR) in Co/Cu, Fe/Cr,and Fe/Au multilayers are presented.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Fe/Au
###Impurity scattering and quantum confinement in giant magnetoresistance systems|Peter Zahn,Jörg Binder,Ingrid Mertig###
(1356031, 1356033)
 Ab initio calculations for the giant magnetoresistance (GMR) in Co/Cu, Fe/Cr,and Fe/Au multilayers are presented.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Co/Cu
###Impurity scattering and quantum confinement in giant magnetoresistance systems|Peter Zahn,Jörg Binder,Ingrid Mertig###
(1356249, 1356251)
 An excellent agreement of experimental and theoreticalresults concerning the general trend of GMR in Co/Cu systems depending on thetype and the position of impurities is obtained.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

In
###Impurity scattering and quantum confinement in giant magnetoresistance systems|Peter Zahn,Jörg Binder,Ingrid Mertig###
(1356322, 1356322)
 In Co/Cu and Fe/Au systems impurities in the magnetic layer lead tohigh GMR values, whereas in Fe/Cr systems defects at the interfaces are mostefficient to increase GMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co/Cu
###Impurity scattering and quantum confinement in giant magnetoresistance systems|Peter Zahn,Jörg Binder,Ingrid Mertig###
(1356324, 1356326)
 In Co/Cu and Fe/Au systems impurities in the magnetic layer lead tohigh GMR values, whereas in Fe/Cr systems defects at the interfaces are mostefficient to increase GMR.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Fe/Au
###Impurity scattering and quantum confinement in giant magnetoresistance systems|Peter Zahn,Jörg Binder,Ingrid Mertig###
(1356330, 1356332)
 In Co/Cu and Fe/Au systems impurities in the magnetic layer lead tohigh GMR values, whereas in Fe/Cr systems defects at the interfaces are mostefficient to increase GMR.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Fe/Cr
###Impurity scattering and quantum confinement in giant magnetoresistance systems|Peter Zahn,Jörg Binder,Ingrid Mertig###
(1356364, 1356366)
 In Co/Cu and Fe/Au systems impurities in the magnetic layer lead tohigh GMR values, whereas in Fe/Cr systems defects at the interfaces are mostefficient to increase GMR.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Fe
###Relaxation of thermo-remanent magnetization in Fe-Cr GMR multilayers|R. S. Patel,A. K. Majumdar,A. K. Nigam###
(1356830, 1356830)
Relaxation of thermo-remanent magnetization in Fe-Cr GMR multilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 100, 'Oe', 2],[134.0, 500, 'Oe', 3]

Cr
###Relaxation of thermo-remanent magnetization in Fe-Cr GMR multilayers|R. S. Patel,A. K. Majumdar,A. K. Nigam###
(1356832, 1356832)
Relaxation of thermo-remanent magnetization in Fe-Cr GMR multilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 100, 'Oe', 2],[132.0, 500, 'Oe', 3]

Fe
###Relaxation of thermo-remanent magnetization in Fe-Cr GMR multilayers|R. S. Patel,A. K. Majumdar,A. K. Nigam###
(1356865, 1356865)
 The time decay of the thermo-remanent magnetization (TRM) in Fe-Cr giantmagnetoresistive (GMR) multilayers has been investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 100, 'Oe', 1],[99.0, 500, 'Oe', 2]

Cr
###Relaxation of thermo-remanent magnetization in Fe-Cr GMR multilayers|R. S. Patel,A. K. Majumdar,A. K. Nigam###
(1356867, 1356867)
 The time decay of the thermo-remanent magnetization (TRM) in Fe-Cr giantmagnetoresistive (GMR) multilayers has been investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 100, 'Oe', 1],[97.0, 500, 'Oe', 2]

Co
###Magnetoresistance Anisotropy of Polycrystalline Cobalt Films: Geometrical-Size- and Domain-Effects|Woosik Gil,Detlef Goerlitz,Michael Horisberger,Juergen Koetzler###
(1357278, 1357278)
 The magnetoresistance (MR) of 10 nm to 200 nm thin polycrystalline Co-films,deposited on glass and insulating Si(100), is studied in fields up to 120 kOe,aligned along the three principal directions with respect to the currentlongitudinal, transverse (in-plane), and polar (out-of-plane).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 10, 'nm', 0],[6.0, 200, 'nm', 0],[33.0, 120, 'kOe', 0],[257.0, 10, ',', 6]

At
###Magnetoresistance Anisotropy of Polycrystalline Cobalt Films: Geometrical-Size- and Domain-Effects|Woosik Gil,Detlef Goerlitz,Michael Horisberger,Juergen Koetzler###
(1357363, 1357363)
 At technicalsaturation, the anisotropic MR (AMR) in polar fields turns out to be up totwice as large as in transverse fields, which resembles the yet unexplainedgeometrical size-effect (GSE), previously reported for Ni- and Permalloy films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 10, 'nm', 1],[91.0, 200, 'nm', 1],[52.0, 120, 'kOe', 1],[172.0, 10, ',', 5]

Ni
###Magnetoresistance Anisotropy of Polycrystalline Cobalt Films: Geometrical-Size- and Domain-Effects|Woosik Gil,Detlef Goerlitz,Michael Horisberger,Juergen Koetzler###
(1357448, 1357448)
 At technicalsaturation, the anisotropic MR (AMR) in polar fields turns out to be up totwice as large as in transverse fields, which resembles the yet unexplainedgeometrical size-effect (GSE), previously reported for Ni- and Permalloy films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 10, 'nm', 1],[176.0, 200, 'nm', 1],[137.0, 120, 'kOe', 1],[87.0, 10, ',', 5]

B
###Magnetoresistance Anisotropy of Polycrystalline Cobalt Films: Geometrical-Size- and Domain-Effects|Woosik Gil,Detlef Goerlitz,Michael Horisberger,Juergen Koetzler###
(1357533, 1357533)
B 10, 4626(1974)], we associate the GSEwith an anisotropic effect of the spin-orbit interaction on the sd-scatteringof the minority spins due to a film texture.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[264.0, 10, 'nm', 6],[261.0, 200, 'nm', 6],[222.0, 120, 'kOe', 6],[2.0, 10, ',', 0]

Ga
###Anisotropic Magnetoresistance and Magnetic Anisotropy in High-quality (Ga,Mn)As Films|K. Y. Wang,K. W. Edmonds,R. P. Campion,L. X. Zhao,C. T. Foxon,B. L. Gallagher###
(1357789, 1357789)
Anisotropic Magnetoresistance and Magnetic Anisotropy in High-quality (Ga,Mn)As Films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[190.0, 90, 'o', 4]

Mn
###Anisotropic Magnetoresistance and Magnetic Anisotropy in High-quality (Ga,Mn)As Films|K. Y. Wang,K. W. Edmonds,R. P. Campion,L. X. Zhao,C. T. Foxon,B. L. Gallagher###
(1357791, 1357791)
Anisotropic Magnetoresistance and Magnetic Anisotropy in High-quality (Ga,Mn)As Films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 90, 'o', 4]

As
###Anisotropic Magnetoresistance and Magnetic Anisotropy in High-quality (Ga,Mn)As Films|K. Y. Wang,K. W. Edmonds,R. P. Campion,L. X. Zhao,C. T. Foxon,B. L. Gallagher###
(1357793, 1357793)
Anisotropic Magnetoresistance and Magnetic Anisotropy in High-quality (Ga,Mn)As Films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, 90, 'o', 4]

Ga1-x
###Anisotropic Magnetoresistance and Magnetic Anisotropy in High-quality (Ga,Mn)As Films|K. Y. Wang,K. W. Edmonds,R. P. Campion,L. X. Zhao,C. T. Foxon,B. L. Gallagher###
(1357831, 1357834)
 We have performed a systematic investigation of magnetotransport of a seriesof as-grown and annealed Ga1-xMnxAs samples with 0.011 < x<missing VAR> < 0.09.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[145.0, 90, 'o', 3]

As
###Anisotropic Magnetoresistance and Magnetic Anisotropy in High-quality (Ga,Mn)As Films|K. Y. Wang,K. W. Edmonds,R. P. Campion,L. X. Zhao,C. T. Foxon,B. L. Gallagher###
(1357836, 1357836)
 We have performed a systematic investigation of magnetotransport of a seriesof as-grown and annealed Ga1-xMnxAs samples with 0.011 < x<missing VAR> < 0.09.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 90, 'o', 3]

Mn
###Anisotropic Magnetoresistance and Magnetic Anisotropy in High-quality (Ga,Mn)As Films|K. Y. Wang,K. W. Edmonds,R. P. Campion,L. X. Zhao,C. T. Foxon,B. L. Gallagher###
(1357890, 1357890)
 We findthat the anisotropic magnetoresistance (AMR) generally decreases withincreasing magnetic anisotropy, with increasing Mn concentration and on lowtemperature annealing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 90, 'o', 2]

Co
###Domain Wall Magnetoresistance of Co Nanowires|R. F. Sabirianov,A. K. Solanki,J. D. Burton,S. S. Jaswal,E. Y. Tsymbal###
(1358185, 1358185)
Domain Wall Magnetoresistance of Co Nanowires.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 1.5, 'nm', 1],[292.0, 250, '%', 5]

Co
###Domain Wall Magnetoresistance of Co Nanowires|R. F. Sabirianov,A. K. Solanki,J. D. Burton,S. S. Jaswal,E. Y. Tsymbal###
(1358249, 1358249)
 Using density functional theory implemented within a tight-binding linearmuffin-tin orbital method we perform calculations of electronic, magnetic andtransport properties of ferromagnetic free-standing fcc Co wires with diametersup to 1.5 nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 1.5, 'nm', 0],[228.0, 250, '%', 4]

W
###Domain Wall Magnetoresistance of Co Nanowires|R. F. Sabirianov,A. K. Solanki,J. D. Burton,S. S. Jaswal,E. Y. Tsymbal###
(1358373, 1358373)
 We calculate the magnetoresistance(MR) of a domain wall (D<missing VAR>W) modeled by a spin-spiral region of finite widthsandwiched between two semi-infinite Co wire leads.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 1.5, 'nm', 2],[104.0, 250, '%', 2]

Co
###Domain Wall Magnetoresistance of Co Nanowires|R. F. Sabirianov,A. K. Solanki,J. D. Burton,S. S. Jaswal,E. Y. Tsymbal###
(1358405, 1358405)
 We calculate the magnetoresistance(MR) of a domain wall (D<missing VAR>W) modeled by a spin-spiral region of finite widthsandwiched between two semi-infinite Co wire leads.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 1.5, 'nm', 2],[72.0, 250, '%', 2]

W
###Domain Wall Magnetoresistance of Co Nanowires|R. F. Sabirianov,A. K. Solanki,J. D. Burton,S. S. Jaswal,E. Y. Tsymbal###
(1358421, 1358421)
 We find that the D<missing VAR>W MRdecreases very rapidly, on the scale of a few interatomic layers, with theincreasing D<missing VAR>W width.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 1.5, 'nm', 3],[56.0, 250, '%', 1]

W
###Domain Wall Magnetoresistance of Co Nanowires|R. F. Sabirianov,A. K. Solanki,J. D. Burton,S. S. Jaswal,E. Y. Tsymbal###
(1358459, 1358459)
 We find that the D<missing VAR>W MRdecreases very rapidly, on the scale of a few interatomic layers, with theincreasing D<missing VAR>W width.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[198.0, 1.5, 'nm', 3],[18.0, 250, '%', 1]

W
###Domain Wall Magnetoresistance of Co Nanowires|R. F. Sabirianov,A. K. Solanki,J. D. Burton,S. S. Jaswal,E. Y. Tsymbal###
(1358492, 1358492)
 The largest MR value of about 250% is predicted for anabrupt D<missing VAR>W in the monatomic wire.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[231.0, 1.5, 'nm', 4],[15.0, 250, '%', 0]

W
###Domain Wall Magnetoresistance of Co Nanowires|R. F. Sabirianov,A. K. Solanki,J. D. Burton,S. S. Jaswal,E. Y. Tsymbal###
(1358568, 1358568)
 We show that, for some energy values, thedensity of states and the conductance may be non-zero only in one spin channel,making the MR for the abrupt D<missing VAR>W infinitely large.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[307.0, 1.5, 'nm', 5],[91.0, 250, '%', 1]

W
###Domain Wall Magnetoresistance of Co Nanowires|R. F. Sabirianov,A. K. Solanki,J. D. Burton,S. S. Jaswal,E. Y. Tsymbal###
(1358591, 1358591)
 We also demonstrate that forthe abrupt D<missing VAR>W a large MR may occur due to the hybridization between two spinsubbands across the D<missing VAR>W interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[330.0, 1.5, 'nm', 6],[114.0, 250, '%', 2]

W
###Domain Wall Magnetoresistance of Co Nanowires|R. F. Sabirianov,A. K. Solanki,J. D. Burton,S. S. Jaswal,E. Y. Tsymbal###
(1358626, 1358626)
 We also demonstrate that forthe abrupt D<missing VAR>W a large MR may occur due to the hybridization between two spinsubbands across the D<missing VAR>W interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[365.0, 1.5, 'nm', 6],[149.0, 250, '%', 2]

Co
###Domain Wall Magnetoresistance of Co Nanowires|R. F. Sabirianov,A. K. Solanki,J. D. Burton,S. S. Jaswal,E. Y. Tsymbal###
(1358662, 1358662)
 We do not find, however, such a behavior atthe Fermi energy for the Co wires considered.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[401.0, 1.5, 'nm', 7],[185.0, 250, '%', 3]

BCS
###Strong-coupling theory of high-temperature superconductivity and colossal magnetoresistance|A. S. Alexandrov###
(1358712, 1358714)
 We argue that the extension of the BCS theory to the strong-coupling regimedescribes the high-temperature superconductivity of cuprates and the colossalmagnetoresistance (CMR) of ferromagnetic oxides if the phonon dressing ofcarriers and strong attractive correlations are taken into account.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Strong-coupling theory of high-temperature superconductivity and colossal magnetoresistance|A. S. Alexandrov###
(1358753, 1358753)
 We argue that the extension of the BCS theory to the strong-coupling regimedescribes the high-temperature superconductivity of cuprates and the colossalmagnetoresistance (CMR) of ferromagnetic oxides if the phonon dressing ofcarriers and strong attractive correlations are taken into account.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Strong-coupling theory of high-temperature superconductivity and colossal magnetoresistance|A. S. Alexandrov###
(1358930, 1358930)
 Remarkably,a similar strong-coupling approach offers a simple explanation of CMR inferromagnetic oxides.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Strong-coupling theory of high-temperature superconductivity and colossal magnetoresistance|A. S. Alexandrov###
(1359003, 1359003)
 The pairing of oxygen holes into heavy bipolarons in theparamagnetic phase and their magnetic pair-breaking in the ferromagnetic phaseaccount for the first-order ferromagnetic phase transition, CMR, isotopeeffects, and pseudogaps in doped manganites.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mo
###Magnetic and transport properties of Mo substituted La0.67Ba0.33Mn1-xMoxO3 perovskite system|Darshan C. Kundaliya,Reeta Vij,R. G. Kulkarni,B. Varughese,A. K. Nigam,S. K. Malik###
(1359102, 1359102)
Magnetic and transport properties of Mo substituted La0.67Ba0.33Mn1-xMoxO3 perovskite system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[204.0, 330, 'K', 4],[212.0, 255, 'K', 4],[352.0, 3, 'd', 7]

La0.67Ba0.33Mn1-x
###Magnetic and transport properties of Mo substituted La0.67Ba0.33Mn1-xMoxO3 perovskite system|Darshan C. Kundaliya,Reeta Vij,R. G. Kulkarni,B. Varughese,A. K. Nigam,S. K. Malik###
(1359106, 1359113)
Magnetic and transport properties of Mo substituted La0.67Ba0.33Mn1-xMoxO3 perovskite system.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[193.0, 330, 'K', 4],[201.0, 255, 'K', 4],[341.0, 3, 'd', 7]

O3
###Magnetic and transport properties of Mo substituted La0.67Ba0.33Mn1-xMoxO3 perovskite system|Darshan C. Kundaliya,Reeta Vij,R. G. Kulkarni,B. Varughese,A. K. Nigam,S. K. Malik###
(1359115, 1359116)
Magnetic and transport properties of Mo substituted La0.67Ba0.33Mn1-xMoxO3 perovskite system.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[190.0, 330, 'K', 4],[198.0, 255, 'K', 4],[338.0, 3, 'd', 7]

Mo
###Magnetic and transport properties of Mo substituted La0.67Ba0.33Mn1-xMoxO3 perovskite system|Darshan C. Kundaliya,Reeta Vij,R. G. Kulkarni,B. Varughese,A. K. Nigam,S. K. Malik###
(1359131, 1359131)
 The effect of doping Mo for Mn on the magnetic and transport properties ofthe colossal magnetoresistance material, La0.67Ba0.33MnO3, has been studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 330, 'K', 3],[183.0, 255, 'K', 3],[323.0, 3, 'd', 6]

Mn
###Magnetic and transport properties of Mo substituted La0.67Ba0.33Mn1-xMoxO3 perovskite system|Darshan C. Kundaliya,Reeta Vij,R. G. Kulkarni,B. Varughese,A. K. Nigam,S. K. Malik###
(1359135, 1359135)
 The effect of doping Mo for Mn on the magnetic and transport properties ofthe colossal magnetoresistance material, La0.67Ba0.33MnO3, has been studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[171.0, 330, 'K', 3],[179.0, 255, 'K', 3],[319.0, 3, 'd', 6]

La0.67Ba0.33MnO3
###Magnetic and transport properties of Mo substituted La0.67Ba0.33Mn1-xMoxO3 perovskite system|Darshan C. Kundaliya,Reeta Vij,R. G. Kulkarni,B. Varughese,A. K. Nigam,S. K. Malik###
(1359161, 1359167)
 The effect of doping Mo for Mn on the magnetic and transport properties ofthe colossal magnetoresistance material, La0.67Ba0.33MnO3, has been studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.066,0.134,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 330, 'K', 3],[147.0, 255, 'K', 3],[287.0, 3, 'd', 6]

La0.67Ba0.33Mn1-x
###Magnetic and transport properties of Mo substituted La0.67Ba0.33Mn1-xMoxO3 perovskite system|Darshan C. Kundaliya,Reeta Vij,R. G. Kulkarni,B. Varughese,A. K. Nigam,S. K. Malik###
(1359186, 1359193)
Compounds of the series La0.67Ba0.33Mn1-xMoxO3 (x<missing VAR>0.0 to 0.1) have beenprepared and found to crystallize in the orthorhombic structure (space groupPbnm).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[113.0, 330, 'K', 2],[121.0, 255, 'K', 2],[261.0, 3, 'd', 5]

O3
###Magnetic and transport properties of Mo substituted La0.67Ba0.33Mn1-xMoxO3 perovskite system|Darshan C. Kundaliya,Reeta Vij,R. G. Kulkarni,B. Varughese,A. K. Nigam,S. K. Malik###
(1359195, 1359196)
Compounds of the series La0.67Ba0.33Mn1-xMoxO3 (x<missing VAR>0.0 to 0.1) have beenprepared and found to crystallize in the orthorhombic structure (space groupPbnm).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 330, 'K', 2],[118.0, 255, 'K', 2],[258.0, 3, 'd', 5]

Mo
###Magnetic and transport properties of Mo substituted La0.67Ba0.33Mn1-xMoxO3 perovskite system|Darshan C. Kundaliya,Reeta Vij,R. G. Kulkarni,B. Varughese,A. K. Nigam,S. K. Malik###
(1359332, 1359332)
 The change in Tp on Mosubstitution is relatively much smaller than the corresponding change observedon substitution by other transition elements, such as Ti, Fe, Co, Ni, etc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 330, 'K', 1],[18.0, 255, 'K', 1],[122.0, 3, 'd', 2]

Ti
###Magnetic and transport properties of Mo substituted La0.67Ba0.33Mn1-xMoxO3 perovskite system|Darshan C. Kundaliya,Reeta Vij,R. G. Kulkarni,B. Varughese,A. K. Nigam,S. K. Malik###
(1359373, 1359373)
 The change in Tp on Mosubstitution is relatively much smaller than the corresponding change observedon substitution by other transition elements, such as Ti, Fe, Co, Ni, etc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 330, 'K', 1],[59.0, 255, 'K', 1],[81.0, 3, 'd', 2]

Fe
###Magnetic and transport properties of Mo substituted La0.67Ba0.33Mn1-xMoxO3 perovskite system|Darshan C. Kundaliya,Reeta Vij,R. G. Kulkarni,B. Varughese,A. K. Nigam,S. K. Malik###
(1359376, 1359376)
 The change in Tp on Mosubstitution is relatively much smaller than the corresponding change observedon substitution by other transition elements, such as Ti, Fe, Co, Ni, etc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 330, 'K', 1],[62.0, 255, 'K', 1],[78.0, 3, 'd', 2]

Co
###Magnetic and transport properties of Mo substituted La0.67Ba0.33Mn1-xMoxO3 perovskite system|Darshan C. Kundaliya,Reeta Vij,R. G. Kulkarni,B. Varughese,A. K. Nigam,S. K. Malik###
(1359379, 1359379)
 The change in Tp on Mosubstitution is relatively much smaller than the corresponding change observedon substitution by other transition elements, such as Ti, Fe, Co, Ni, etc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 330, 'K', 1],[65.0, 255, 'K', 1],[75.0, 3, 'd', 2]

Ni
###Magnetic and transport properties of Mo substituted La0.67Ba0.33Mn1-xMoxO3 perovskite system|Darshan C. Kundaliya,Reeta Vij,R. G. Kulkarni,B. Varughese,A. K. Nigam,S. K. Malik###
(1359382, 1359382)
 The change in Tp on Mosubstitution is relatively much smaller than the corresponding change observedon substitution by other transition elements, such as Ti, Fe, Co, Ni, etc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 330, 'K', 1],[68.0, 255, 'K', 1],[72.0, 3, 'd', 2]

C
###Magnetic and transport properties of Mo substituted La0.67Ba0.33Mn1-xMoxO3 perovskite system|Darshan C. Kundaliya,Reeta Vij,R. G. Kulkarni,B. Varughese,A. K. Nigam,S. K. Malik###
(1359402, 1359402)
Further, the ferromagnetic transition temperature (T<missing VAR>C) is nearly unchanged byMo substitution.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 330, 'K', 2],[88.0, 255, 'K', 2],[52.0, 3, 'd', 1]

Mo
###Magnetic and transport properties of Mo substituted La0.67Ba0.33Mn1-xMoxO3 perovskite system|Darshan C. Kundaliya,Reeta Vij,R. G. Kulkarni,B. Varughese,A. K. Nigam,S. K. Malik###
(1359414, 1359414)
Further, the ferromagnetic transition temperature (T<missing VAR>C) is nearly unchanged byMo substitution.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 330, 'K', 2],[100.0, 255, 'K', 2],[40.0, 3, 'd', 1]

C
###Magnetic and transport properties of Mo substituted La0.67Ba0.33Mn1-xMoxO3 perovskite system|Darshan C. Kundaliya,Reeta Vij,R. G. Kulkarni,B. Varughese,A. K. Nigam,S. K. Malik###
(1359440, 1359440)
 This is in striking contrast to the large decrease in T<missing VAR>Cobserved with substitution of above-mentioned 3d elements.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 330, 'K', 3],[126.0, 255, 'K', 3],[14.0, 3, 'd', 0]

La0.67Ba0.33Mn1-x
###Magnetic and transport properties of Mo substituted La0.67Ba0.33Mn1-xMoxO3 perovskite system|Darshan C. Kundaliya,Reeta Vij,R. G. Kulkarni,B. Varughese,A. K. Nigam,S. K. Malik###
(1359474, 1359481)
 These unusualmagnetic and transport properties of La0.67Ba0.33Mn1-xMoxO3 may be either dueto the formation of magnetic pair between Mn and Mo or due to strongMo(4d)-O(2p) overlap, which in turn, may affect the Mn-Mn interaction via theoxygen atoms<missing PERIOD>
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[168.0, 330, 'K', 4],[160.0, 255, 'K', 4],[20.0, 3, 'd', 1]

O3
###Magnetic and transport properties of Mo substituted La0.67Ba0.33Mn1-xMoxO3 perovskite system|Darshan C. Kundaliya,Reeta Vij,R. G. Kulkarni,B. Varughese,A. K. Nigam,S. K. Malik###
(1359483, 1359484)
 These unusualmagnetic and transport properties of La0.67Ba0.33Mn1-xMoxO3 may be either dueto the formation of magnetic pair between Mn and Mo or due to strongMo(4d)-O(2p) overlap, which in turn, may affect the Mn-Mn interaction via theoxygen atoms<missing PERIOD>
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[177.0, 330, 'K', 4],[169.0, 255, 'K', 4],[29.0, 3, 'd', 1]

Mn
###Magnetic and transport properties of Mo substituted La0.67Ba0.33Mn1-xMoxO3 perovskite system|Darshan C. Kundaliya,Reeta Vij,R. G. Kulkarni,B. Varughese,A. K. Nigam,S. K. Malik###
(1359509, 1359509)
 These unusualmagnetic and transport properties of La0.67Ba0.33Mn1-xMoxO3 may be either dueto the formation of magnetic pair between Mn and Mo or due to strongMo(4d)-O(2p) overlap, which in turn, may affect the Mn-Mn interaction via theoxygen atoms<missing PERIOD>
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[203.0, 330, 'K', 4],[195.0, 255, 'K', 4],[55.0, 3, 'd', 1]

Mo
###Magnetic and transport properties of Mo substituted La0.67Ba0.33Mn1-xMoxO3 perovskite system|Darshan C. Kundaliya,Reeta Vij,R. G. Kulkarni,B. Varughese,A. K. Nigam,S. K. Malik###
(1359513, 1359513)
 These unusualmagnetic and transport properties of La0.67Ba0.33Mn1-xMoxO3 may be either dueto the formation of magnetic pair between Mn and Mo or due to strongMo(4d)-O(2p) overlap, which in turn, may affect the Mn-Mn interaction via theoxygen atoms<missing PERIOD>
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[207.0, 330, 'K', 4],[199.0, 255, 'K', 4],[59.0, 3, 'd', 1]

Mn
###Magnetic and transport properties of Mo substituted La0.67Ba0.33Mn1-xMoxO3 perovskite system|Darshan C. Kundaliya,Reeta Vij,R. G. Kulkarni,B. Varughese,A. K. Nigam,S. K. Malik###
(1359552, 1359552)
 These unusualmagnetic and transport properties of La0.67Ba0.33Mn1-xMoxO3 may be either dueto the formation of magnetic pair between Mn and Mo or due to strongMo(4d)-O(2p) overlap, which in turn, may affect the Mn-Mn interaction via theoxygen atoms<missing PERIOD>
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[246.0, 330, 'K', 4],[238.0, 255, 'K', 4],[98.0, 3, 'd', 1]

Mn
###Magnetic and transport properties of Mo substituted La0.67Ba0.33Mn1-xMoxO3 perovskite system|Darshan C. Kundaliya,Reeta Vij,R. G. Kulkarni,B. Varughese,A. K. Nigam,S. K. Malik###
(1359554, 1359554)
 These unusualmagnetic and transport properties of La0.67Ba0.33Mn1-xMoxO3 may be either dueto the formation of magnetic pair between Mn and Mo or due to strongMo(4d)-O(2p) overlap, which in turn, may affect the Mn-Mn interaction via theoxygen atoms<missing PERIOD>
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[248.0, 330, 'K', 4],[240.0, 255, 'K', 4],[100.0, 3, 'd', 1]

W
###Gossamer Superconductivity, New Paradigm?|H. Won,S. Haas,K. Maki,D. Parker,B. Dora,A. Virosztek###
(1359611, 1359611)
 We shall review our recent works on d<missing VAR>-wave density wave (dDW) and gossamersuperconductivity (i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[176.0, 2, ',', 3]

W
###Gossamer Superconductivity, New Paradigm?|H. Won,S. Haas,K. Maki,D. Parker,B. Dora,A. Virosztek###
(1359643, 1359643)
 d<missing VAR>-wave superconductivity in the presence of dDW) inhigh-Tc cuprates and CeCoIn5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 2, ',', 2]

CeCoIn5
###Gossamer Superconductivity, New Paradigm?|H. Won,S. Haas,K. Maki,D. Parker,B. Dora,A. Virosztek###
(1359658, 1359661)
 d<missing VAR>-wave superconductivity in the presence of dDW) inhigh-Tc cuprates and CeCoIn5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7142857142857143,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 2, ',', 2]

CeCoIn5
###Gossamer Superconductivity, New Paradigm?|H. Won,S. Haas,K. Maki,D. Parker,B. Dora,A. Virosztek###
(1359718, 1359721)
 a) We show that both the giant Nernsteffect and the angle dependent magnetoresistance (ADMR) in the pseudogap phasesof the cuprates and CeCoIn5 are manifestations of dDW.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7142857142857143,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 2, ',', 1]

W
###Gossamer Superconductivity, New Paradigm?|H. Won,S. Haas,K. Maki,D. Parker,B. Dora,A. Virosztek###
(1359731, 1359731)
 a) We show that both the giant Nernsteffect and the angle dependent magnetoresistance (ADMR) in the pseudogap phasesof the cuprates and CeCoIn5 are manifestations of dDW.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 2, ',', 1]

W
###Gossamer Superconductivity, New Paradigm?|H. Won,S. Haas,K. Maki,D. Parker,B. Dora,A. Virosztek###
(1359805, 1359805)
 b) The phasediagram of high-Tc cuprates is understood in terms of mean field theory,which includes two order parameters Delta1 and Delta2, where oneorder parameter is from dDW and the other from d<missing VAR>-wave superconductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 2, ',', 0]

In
###Gossamer Superconductivity, New Paradigm?|H. Won,S. Haas,K. Maki,D. Parker,B. Dora,A. Virosztek###
(1359825, 1359825)
 c) Inthe optimally to the overdoped region we find the spatially periodic dDW, ananalogue of the Fulde-Ferrell-Larkin-Ovchinnikov (FFL<missing VAR>O) state, becomes morestable.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 2, ',', 1]

W
###Gossamer Superconductivity, New Paradigm?|H. Won,S. Haas,K. Maki,D. Parker,B. Dora,A. Virosztek###
(1359852, 1359852)
 c) Inthe optimally to the overdoped region we find the spatially periodic dDW, ananalogue of the Fulde-Ferrell-Larkin-Ovchinnikov (FFL<missing VAR>O) state, becomes morestable.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 2, ',', 1]

FF
###Gossamer Superconductivity, New Paradigm?|H. Won,S. Haas,K. Maki,D. Parker,B. Dora,A. Virosztek###
(1359873, 1359874)
 c) Inthe optimally to the overdoped region we find the spatially periodic dDW, ananalogue of the Fulde-Ferrell-Larkin-Ovchinnikov (FFL<missing VAR>O) state, becomes morestable.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 2, ',', 1]

O
###Gossamer Superconductivity, New Paradigm?|H. Won,S. Haas,K. Maki,D. Parker,B. Dora,A. Virosztek###
(1359876, 1359876)
 c) Inthe optimally to the overdoped region we find the spatially periodic dDW, ananalogue of the Fulde-Ferrell-Larkin-Ovchinnikov (FFL<missing VAR>O) state, becomes morestable.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 2, ',', 1]

In
###Gossamer Superconductivity, New Paradigm?|H. Won,S. Haas,K. Maki,D. Parker,B. Dora,A. Virosztek###
(1359893, 1359893)
 d) In the underdoped region where Delta2/Delta1 ll 1 theUemera relation is obtained within the present model.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 2, ',', 2]

CeCoIn5
###Gossamer Superconductivity, New Paradigm?|H. Won,S. Haas,K. Maki,D. Parker,B. Dora,A. Virosztek###
(1359975, 1359978)
 We speculate that thegossamer superconductivity is at the heart of high-Tc cupratesuperconductors, the heavy-fermion superconductor CeCoIn5 and the organicsuperconductors kappa- (ET)2Cu(NCS)2 and (TMTSF)2PF6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7142857142857143,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 2, ',', 3]

Cu(NCS)2
###Gossamer Superconductivity, New Paradigm?|H. Won,S. Haas,K. Maki,D. Parker,B. Dora,A. Virosztek###
(1359997, 1360003)
 We speculate that thegossamer superconductivity is at the heart of high-Tc cupratesuperconductors, the heavy-fermion superconductor CeCoIn5 and the organicsuperconductors kappa- (ET)2Cu(NCS)2 and (TMTSF)2PF6.
Featurization terminated normally.
0,0,0,0,0,0.2857142857142857,0.2857142857142857,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[210.0, 2, ',', 3]

F
###Gossamer Superconductivity, New Paradigm?|H. Won,S. Haas,K. Maki,D. Parker,B. Dora,A. Virosztek###
(1360012, 1360012)
 We speculate that thegossamer superconductivity is at the heart of high-Tc cupratesuperconductors, the heavy-fermion superconductor CeCoIn5 and the organicsuperconductors kappa- (ET)2Cu(NCS)2 and (TMTSF)2PF6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[225.0, 2, ',', 3]

PF6
###Gossamer Superconductivity, New Paradigm?|H. Won,S. Haas,K. Maki,D. Parker,B. Dora,A. Virosztek###
(1360015, 1360017)
 We speculate that thegossamer superconductivity is at the heart of high-Tc cupratesuperconductors, the heavy-fermion superconductor CeCoIn5 and the organicsuperconductors kappa- (ET)2Cu(NCS)2 and (TMTSF)2PF6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.8571428571428571,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[228.0, 2, ',', 3]

NiFe2O4
###Spinel ferrites: old materials bring new opportunities for spintronics|Ulrike Lueders,Agnes Barthelemy,Manuel Bibes,Karim Bouzehouane,Stephane Fusil,Eric Jacquet,Jean-Pierre Contour,Jean-Francois Bobo,Josep Fontcuberta,Albert Fert###
(1360167, 1360171)
 Here we show that the epitaxial growth of nanometricNiFe2O4 films onto perovskite substrates allows the stabilization of novelferrite phases with properties dramatically differing from bulk ones.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiFe2O4
###Spinel ferrites: old materials bring new opportunities for spintronics|Ulrike Lueders,Agnes Barthelemy,Manuel Bibes,Karim Bouzehouane,Stephane Fusil,Eric Jacquet,Jean-Pierre Contour,Jean-Francois Bobo,Josep Fontcuberta,Albert Fert###
(1360215, 1360219)
 Indeed,NiFe2O4 films few nanometres thick have a saturation magnetization at leasttwice that of the bulk compound and their resistivity can be tuned by orders ofmagnitude, depending on the growth conditions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiFe2O4
###Spinel ferrites: old materials bring new opportunities for spintronics|Ulrike Lueders,Agnes Barthelemy,Manuel Bibes,Karim Bouzehouane,Stephane Fusil,Eric Jacquet,Jean-Pierre Contour,Jean-Francois Bobo,Josep Fontcuberta,Albert Fert###
(1360295, 1360299)
 By integrating such thin NiFe2O4layers into spin-dependent tunnelling heterostructures, we demonstrate thatthis versatile material can be useful for spintronics, either as a conductiveelectrode in magnetic tunnel junctions or as a spin-filtering insulatingbarrier in the little explored type of tunnel junction called spin-filter.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Nodal quasiparticle in pseudogapped colossal magnetoresistive manganites|N. Mannella,W. Yang,X. J. Zhou,H. Zheng,J. F. Mitchell,J. Zaanen,T. P. Devereaux,N. Nagaosa,Z. Hussain,Z. -X. Shen###
(1360937, 1360937)
 A characteristic feature of the copper oxide high-temperature superconductorsis the dichotomy between the electronic excitations along the nodal (diagonal)and antinodal (parallel to the Cu-O bonds) directions in momentum space,generally assumed to be linked to the d<missing VAR>-wave symmetry of the superconductingstate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Nodal quasiparticle in pseudogapped colossal magnetoresistive manganites|N. Mannella,W. Yang,X. J. Zhou,H. Zheng,J. F. Mitchell,J. Zaanen,T. P. Devereaux,N. Nagaosa,Z. Hussain,Z. -X. Shen###
(1360939, 1360939)
 A characteristic feature of the copper oxide high-temperature superconductorsis the dichotomy between the electronic excitations along the nodal (diagonal)and antinodal (parallel to the Cu-O bonds) directions in momentum space,generally assumed to be linked to the d<missing VAR>-wave symmetry of the superconductingstate.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La1.2Sr1.8Mn2O7
###Nodal quasiparticle in pseudogapped colossal magnetoresistive manganites|N. Mannella,W. Yang,X. J. Zhou,H. Zheng,J. F. Mitchell,J. Zaanen,T. P. Devereaux,N. Nagaosa,Z. Hussain,Z. -X. Shen###
(1361295, 1361302)
 Here we report experimental evidencethat a very similar pseudogap state with a nodal-antinodal dichotomouscharacter exists in a system that is markedly different from a superconductorthe ferromagnetic metallic groundstate of the colossal magnetoresistive bilayermanganite La1.2Sr1.8Mn2O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.09999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeZnSe
###Enhanced tunneling magnetoresistance in Fe|ZnSe double junctions|Jeronimo Peralta Ramos,Ana Maria Llois###
(1361378, 1361380)
Enhanced tunneling magnetoresistance in FeZnSe double junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[268.0, 2, 'D', 4]

FeZnSeFeZnSeFe
###Enhanced tunneling magnetoresistance in Fe|ZnSe double junctions|Jeronimo Peralta Ramos,Ana Maria Llois###
(1361405, 1361411)
 We calculate the tunneling magnetoresistance (TMR) of FeZnSeFeZnSeFe(001) double magnetic tunnel junctions as a function of the in-between Felayers<missing VAR> thickness, and compare these results with those of FeZnSeFe simplejunctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0.2857142857142857,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[237.0, 2, 'D', 3]

Fe
###Enhanced tunneling magnetoresistance in Fe|ZnSe double junctions|Jeronimo Peralta Ramos,Ana Maria Llois###
(1361440, 1361440)
 We calculate the tunneling magnetoresistance (TMR) of FeZnSeFeZnSeFe(001) double magnetic tunnel junctions as a function of the in-between Felayers<missing VAR> thickness, and compare these results with those of FeZnSeFe simplejunctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[208.0, 2, 'D', 3]

FeZnSeFe
###Enhanced tunneling magnetoresistance in Fe|ZnSe double junctions|Jeronimo Peralta Ramos,Ana Maria Llois###
(1361463, 1361466)
 We calculate the tunneling magnetoresistance (TMR) of FeZnSeFeZnSeFe(001) double magnetic tunnel junctions as a function of the in-between Felayers<missing VAR> thickness, and compare these results with those of FeZnSeFe simplejunctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.25,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[182.0, 2, 'D', 3]

Fe
###Enhanced tunneling magnetoresistance in Fe|ZnSe double junctions|Jeronimo Peralta Ramos,Ana Maria Llois###
(1361583, 1361583)
 We find that the conductances for each spin channel and the TMRstrongly depend on the in-between Fe layers<missing VAR> thickness, and that in some casesthey are enhanced with respect to simple junctions, in qualitative agreementwith recent experimental studies performed on similar systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 2, 'D', 1]

In
###Interface effects in spin-dependent tunneling|E. Y. Tsymbal,K. D. Belashchenko,J. P. Velev,S. S. Jaswal,M. van Schilfgaarde,I. I. Oleynik,D. A. Stewart###
(1361782, 1361782)
 In the past few years the phenomenon of spin dependent tunneling (SDT) inmagnetic tunnel junctions (MTJs) has aroused enormous interest and hasdeveloped into a vigorous field of research.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Interface effects in spin-dependent tunneling|E. Y. Tsymbal,K. D. Belashchenko,J. P. Velev,S. S. Jaswal,M. van Schilfgaarde,I. I. Oleynik,D. A. Stewart###
(1361805, 1361805)
 In the past few years the phenomenon of spin dependent tunneling (SDT) inmagnetic tunnel junctions (MTJs) has aroused enormous interest and hasdeveloped into a vigorous field of research.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Interface effects in spin-dependent tunneling|E. Y. Tsymbal,K. D. Belashchenko,J. P. Velev,S. S. Jaswal,M. van Schilfgaarde,I. I. Oleynik,D. A. Stewart###
(1361933, 1361933)
 Thisled to a number of fundamental questions regarding the phenomenon of SDT.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Interface effects in spin-dependent tunneling|E. Y. Tsymbal,K. D. Belashchenko,J. P. Velev,S. S. Jaswal,M. van Schilfgaarde,I. I. Oleynik,D. A. Stewart###
(1361991, 1361991)
 In this paper we considerdifferent models which suggest that the spin polarization is primarilydetermined by the electronic and atomic structure of the ferromagnet/insulatorinterfaces rather than by their bulk properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Interface effects in spin-dependent tunneling|E. Y. Tsymbal,K. D. Belashchenko,J. P. Velev,S. S. Jaswal,M. van Schilfgaarde,I. I. Oleynik,D. A. Stewart###
(1362184, 1362184)
 The decisiverole of the interfaces is further supported by studies of spin-dependenttunneling within realistic first-principles models of Co/vacuum/Al,Co/Al2O3/Co, Fe/MgO/Fe, and Co/SrTiO3/Co MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Al
###Interface effects in spin-dependent tunneling|E. Y. Tsymbal,K. D. Belashchenko,J. P. Velev,S. S. Jaswal,M. van Schilfgaarde,I. I. Oleynik,D. A. Stewart###
(1362188, 1362188)
 The decisiverole of the interfaces is further supported by studies of spin-dependenttunneling within realistic first-principles models of Co/vacuum/Al,Co/Al2O3/Co, Fe/MgO/Fe, and Co/SrTiO3/Co MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co/Al2O3/Co
###Interface effects in spin-dependent tunneling|E. Y. Tsymbal,K. D. Belashchenko,J. P. Velev,S. S. Jaswal,M. van Schilfgaarde,I. I. Oleynik,D. A. Stewart###
(1362192, 1362199)
 The decisiverole of the interfaces is further supported by studies of spin-dependenttunneling within realistic first-principles models of Co/vacuum/Al,Co/Al2O3/Co, Fe/MgO/Fe, and Co/SrTiO3/Co MTJs.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Fe/MgO/Fe
###Interface effects in spin-dependent tunneling|E. Y. Tsymbal,K. D. Belashchenko,J. P. Velev,S. S. Jaswal,M. van Schilfgaarde,I. I. Oleynik,D. A. Stewart###
(1362202, 1362207)
 The decisiverole of the interfaces is further supported by studies of spin-dependenttunneling within realistic first-principles models of Co/vacuum/Al,Co/Al2O3/Co, Fe/MgO/Fe, and Co/SrTiO3/Co MTJs.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Co/SrTiO3/Co
###Interface effects in spin-dependent tunneling|E. Y. Tsymbal,K. D. Belashchenko,J. P. Velev,S. S. Jaswal,M. van Schilfgaarde,I. I. Oleynik,D. A. Stewart###
(1362212, 1362219)
 The decisiverole of the interfaces is further supported by studies of spin-dependenttunneling within realistic first-principles models of Co/vacuum/Al,Co/Al2O3/Co, Fe/MgO/Fe, and Co/SrTiO3/Co MTJs.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

RuSr2Gd1.5Ce0.5Cu2O10
###Lower critical field and intragrain critical current density in the ruthenate-cuprate RuSr$_{2}$Gd$_{1.5}$Ce$_{0.5}$Cu$_{2}$O$_{10}$|M. G. das Virgens,S. García,L. Ghivelder###
(1362399, 1362409)
Lower critical field and intragrain critical current density in the ruthenate-cuprate RuSr2Gd1.5Ce0.5Cu2O10.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5882352941176471,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.11764705882352941,0,0,0,0,0,0,0,0,0.11764705882352941,0,0,0,0,0,0.058823529411764705,0,0,0,0,0,0,0,0,0,0,0,0,0,0.029411764705882353,0,0,0,0,0,0.08823529411764706,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 1, ',', 1],[255.0, 150, 'and', 4],[256.0, 1500, 'Oe', 4],[277.0, 0.4, 'interval', 4],[385.0, 2, ',', 6]

H
###Lower critical field and intragrain critical current density in the ruthenate-cuprate RuSr$_{2}$Gd$_{1.5}$Ce$_{0.5}$Cu$_{2}$O$_{10}$|M. G. das Virgens,S. García,L. Ghivelder###
(1362427, 1362427)
 The lower critical field of the grains, Hc<missing VAR>1, and the intragrain criticalcurrent density, Jc, were determined for the superconductingruthenate-cuprate RuSr2Gd1.5Ce0.5Cu2O10-delta[Ru-1222(Gd)] through a systematic study of the hysteresis in magnetoresistanceloops.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 1, ',', 0],[237.0, 150, 'and', 3],[238.0, 1500, 'Oe', 3],[259.0, 0.4, 'interval', 3],[367.0, 2, ',', 5]

RuSr2Gd1.5Ce0.5Cu2O10
###Lower critical field and intragrain critical current density in the ruthenate-cuprate RuSr$_{2}$Gd$_{1.5}$Ce$_{0.5}$Cu$_{2}$O$_{10}$|M. G. das Virgens,S. García,L. Ghivelder###
(1362465, 1362475)
 The lower critical field of the grains, Hc<missing VAR>1, and the intragrain criticalcurrent density, Jc, were determined for the superconductingruthenate-cuprate RuSr2Gd1.5Ce0.5Cu2O10-delta[Ru-1222(Gd)] through a systematic study of the hysteresis in magnetoresistanceloops.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5882352941176471,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.11764705882352941,0,0,0,0,0,0,0,0,0.11764705882352941,0,0,0,0,0,0.058823529411764705,0,0,0,0,0,0,0,0,0,0,0,0,0,0.029411764705882353,0,0,0,0,0,0.08823529411764706,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 1, ',', 0],[189.0, 150, 'and', 3],[190.0, 1500, 'Oe', 3],[211.0, 0.4, 'interval', 3],[319.0, 2, ',', 5]

Ru
###Lower critical field and intragrain critical current density in the ruthenate-cuprate RuSr$_{2}$Gd$_{1.5}$Ce$_{0.5}$Cu$_{2}$O$_{10}$|M. G. das Virgens,S. García,L. Ghivelder###
(1362481, 1362481)
 The lower critical field of the grains, Hc<missing VAR>1, and the intragrain criticalcurrent density, Jc, were determined for the superconductingruthenate-cuprate RuSr2Gd1.5Ce0.5Cu2O10-delta[Ru-1222(Gd)] through a systematic study of the hysteresis in magnetoresistanceloops.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 1, ',', 0],[183.0, 150, 'and', 3],[184.0, 1500, 'Oe', 3],[205.0, 0.4, 'interval', 3],[313.0, 2, ',', 5]

(Gd)
###Lower critical field and intragrain critical current density in the ruthenate-cuprate RuSr$_{2}$Gd$_{1.5}$Ce$_{0.5}$Cu$_{2}$O$_{10}$|M. G. das Virgens,S. García,L. Ghivelder###
(1362484, 1362486)
 The lower critical field of the grains, Hc<missing VAR>1, and the intragrain criticalcurrent density, Jc, were determined for the superconductingruthenate-cuprate RuSr2Gd1.5Ce0.5Cu2O10-delta[Ru-1222(Gd)] through a systematic study of the hysteresis in magnetoresistanceloops.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 1, ',', 0],[178.0, 150, 'and', 3],[179.0, 1500, 'Oe', 3],[200.0, 0.4, 'interval', 3],[308.0, 2, ',', 5]

H
###Lower critical field and intragrain critical current density in the ruthenate-cuprate RuSr$_{2}$Gd$_{1.5}$Ce$_{0.5}$Cu$_{2}$O$_{10}$|M. G. das Virgens,S. García,L. Ghivelder###
(1362606, 1362606)
 The temperature dependencyof Hc<missing VAR>1 and Jc both exhibit a smooth increase on cooling withoutsaturation down to T/TSC cong  0.2.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[177.0, 1, ',', 2],[58.0, 150, 'and', 1],[59.0, 1500, 'Oe', 1],[80.0, 0.4, 'interval', 1],[188.0, 2, ',', 3]

SC
###Lower critical field and intragrain critical current density in the ruthenate-cuprate RuSr$_{2}$Gd$_{1.5}$Ce$_{0.5}$Cu$_{2}$O$_{10}$|M. G. das Virgens,S. García,L. Ghivelder###
(1362641, 1362642)
 The temperature dependencyof Hc<missing VAR>1 and Jc both exhibit a smooth increase on cooling withoutsaturation down to T/TSC cong  0.2.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[212.0, 1, ',', 2],[22.0, 150, 'and', 1],[23.0, 1500, 'Oe', 1],[44.0, 0.4, 'interval', 1],[152.0, 2, ',', 3]

H
###Lower critical field and intragrain critical current density in the ruthenate-cuprate RuSr$_{2}$Gd$_{1.5}$Ce$_{0.5}$Cu$_{2}$O$_{10}$|M. G. das Virgens,S. García,L. Ghivelder###
(1362654, 1362654)
 The obtained Hc<missing VAR>1 values varybetween 150 and 1500 Oe in the 0.2 leq  % T/TSC leq  0.4 interval,for samples annealed in an oxygen flow; oxygenation under high pressure (50atm) leads to a further increase.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[225.0, 1, ',', 3],[10.0, 150, 'and', 0],[11.0, 1500, 'Oe', 0],[32.0, 0.4, 'interval', 0],[140.0, 2, ',', 2]

SC
###Lower critical field and intragrain critical current density in the ruthenate-cuprate RuSr$_{2}$Gd$_{1.5}$Ce$_{0.5}$Cu$_{2}$O$_{10}$|M. G. das Virgens,S. García,L. Ghivelder###
(1362681, 1362682)
 The obtained Hc<missing VAR>1 values varybetween 150 and 1500 Oe in the 0.2 leq  % T/TSC leq  0.4 interval,for samples annealed in an oxygen flow; oxygenation under high pressure (50atm) leads to a further increase.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[252.0, 1, ',', 3],[17.0, 150, 'and', 0],[16.0, 1500, 'Oe', 0],[4.0, 0.4, 'interval', 0],[112.0, 2, ',', 2]

H
###Lower critical field and intragrain critical current density in the ruthenate-cuprate RuSr$_{2}$Gd$_{1.5}$Ce$_{0.5}$Cu$_{2}$O$_{10}$|M. G. das Virgens,S. García,L. Ghivelder###
(1362819, 1362819)
 TheHc<missing VAR>1(T) and Jc(T) dependencies are explained in the context of amagnetic phase separation scenario.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[390.0, 1, ',', 6],[155.0, 150, 'and', 3],[154.0, 1500, 'Oe', 3],[133.0, 0.4, 'interval', 3],[25.0, 2, ',', 1]

SrFeO(3-x)
###Magnetoresistance Effects in SrFeO(3-x): Dependence on Phase Composition and Relation to Magnetic and Charge Order|P. Adler,A. Lebon,V. Damljanovic,C. Ulrich,C. Bernhard,A. V. Boris,A. Maljuk,C. T. Lin,B. Keimer###
(1362874, 1362881)
Magnetoresistance Effects in SrFeO(3-x) Dependence on Phase Composition and Relation to Magnetic and Charge Order.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[189.0, 25, '%', 3],[194.0, 9, 'T', 3],[207.0, 60, 'K', 3],[228.0, 60, 'K', 4],[306.0, 70, 'K', 5],[328.0, 90, '%', 5],[332.0, 9, 'T', 5],[371.0, 0.19, ',', 6]

(IV)
###Magnetoresistance Effects in SrFeO(3-x): Dependence on Phase Composition and Relation to Magnetic and Charge Order|P. Adler,A. Lebon,V. Damljanovic,C. Ulrich,C. Bernhard,A. V. Boris,A. Maljuk,C. T. Lin,B. Keimer###
(1362913, 1362916)
 Single crystals of iron(IV) rich oxides SrFeO(3-x) with controlled oxygencontent have been studied by Moessbauer spectroscopy, magnetometry,magnetotransport measurements, Raman spectroscopy, and infrared ellipsometry inorder to relate the large magnetoresistance (MR) effects in this system tophase composition, magnetic and charge order.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 25, '%', 2],[159.0, 9, 'T', 2],[172.0, 60, 'K', 2],[193.0, 60, 'K', 3],[271.0, 70, 'K', 4],[293.0, 90, '%', 4],[297.0, 9, 'T', 4],[336.0, 0.19, ',', 5]

SrFeO(3-x)
###Magnetoresistance Effects in SrFeO(3-x): Dependence on Phase Composition and Relation to Magnetic and Charge Order|P. Adler,A. Lebon,V. Damljanovic,C. Ulrich,C. Bernhard,A. V. Boris,A. Maljuk,C. T. Lin,B. Keimer###
(1362922, 1362929)
 Single crystals of iron(IV) rich oxides SrFeO(3-x) with controlled oxygencontent have been studied by Moessbauer spectroscopy, magnetometry,magnetotransport measurements, Raman spectroscopy, and infrared ellipsometry inorder to relate the large magnetoresistance (MR) effects in this system tophase composition, magnetic and charge order.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[141.0, 25, '%', 2],[146.0, 9, 'T', 2],[159.0, 60, 'K', 2],[180.0, 60, 'K', 3],[258.0, 70, 'K', 4],[280.0, 90, '%', 4],[284.0, 9, 'T', 4],[323.0, 0.19, ',', 5]

In
###Magnetoresistance Effects in SrFeO(3-x): Dependence on Phase Composition and Relation to Magnetic and Charge Order|P. Adler,A. Lebon,V. Damljanovic,C. Ulrich,C. Bernhard,A. V. Boris,A. Maljuk,C. T. Lin,B. Keimer###
(1363043, 1363043)
 In cubic SrFeO3 (x<missing VAR>  0) a large negative MR of 25%at 9 T is associated with a hitherto unknown 60 K magnetic transition and asubsequent drop in resistivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 25, '%', 0],[32.0, 9, 'T', 0],[45.0, 60, 'K', 0],[66.0, 60, 'K', 1],[144.0, 70, 'K', 2],[166.0, 90, '%', 2],[170.0, 9, 'T', 2],[209.0, 0.19, ',', 3]

SrFeO3
###Magnetoresistance Effects in SrFeO(3-x): Dependence on Phase Composition and Relation to Magnetic and Charge Order|P. Adler,A. Lebon,V. Damljanovic,C. Ulrich,C. Bernhard,A. V. Boris,A. Maljuk,C. T. Lin,B. Keimer###
(1363047, 1363050)
 In cubic SrFeO3 (x<missing VAR>  0) a large negative MR of 25%at 9 T is associated with a hitherto unknown 60 K magnetic transition and asubsequent drop in resistivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 25, '%', 0],[25.0, 9, 'T', 0],[38.0, 60, 'K', 0],[59.0, 60, 'K', 1],[137.0, 70, 'K', 2],[159.0, 90, '%', 2],[163.0, 9, 'T', 2],[202.0, 0.19, ',', 3]

K
###Magnetoresistance Effects in SrFeO(3-x): Dependence on Phase Composition and Relation to Magnetic and Charge Order|P. Adler,A. Lebon,V. Damljanovic,C. Ulrich,C. Bernhard,A. V. Boris,A. Maljuk,C. T. Lin,B. Keimer###
(1363136, 1363136)
 The 60 K transition appears in addition to theonset of helical ordering at 130 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 25, '%', 1],[61.0, 9, 'T', 1],[48.0, 60, 'K', 1],[27.0, 60, 'K', 0],[51.0, 70, 'K', 1],[73.0, 90, '%', 1],[77.0, 9, 'T', 1],[116.0, 0.19, ',', 2]

In
###Magnetoresistance Effects in SrFeO(3-x): Dependence on Phase Composition and Relation to Magnetic and Charge Order|P. Adler,A. Lebon,V. Damljanovic,C. Ulrich,C. Bernhard,A. V. Boris,A. Maljuk,C. T. Lin,B. Keimer###
(1363139, 1363139)
 In crystals with vacancy-orderedtetragonal SrFeO(3-x) as majority phase (x<missing VAR> 0.15) a coincidentcharge/antiferromagnetic ordering transition near 70 K gives rise to a negativegiant MR effect of 90% at 9 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 25, '%', 2],[64.0, 9, 'T', 2],[51.0, 60, 'K', 2],[30.0, 60, 'K', 1],[48.0, 70, 'K', 0],[70.0, 90, '%', 0],[74.0, 9, 'T', 0],[113.0, 0.19, ',', 1]

SrFeO(3-x)
###Magnetoresistance Effects in SrFeO(3-x): Dependence on Phase Composition and Relation to Magnetic and Charge Order|P. Adler,A. Lebon,V. Damljanovic,C. Ulrich,C. Bernhard,A. V. Boris,A. Maljuk,C. T. Lin,B. Keimer###
(1363152, 1363159)
 In crystals with vacancy-orderedtetragonal SrFeO(3-x) as majority phase (x<missing VAR> 0.15) a coincidentcharge/antiferromagnetic ordering transition near 70 K gives rise to a negativegiant MR effect of 90% at 9 T.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[82.0, 25, '%', 2],[77.0, 9, 'T', 2],[64.0, 60, 'K', 2],[43.0, 60, 'K', 1],[28.0, 70, 'K', 0],[50.0, 90, '%', 0],[54.0, 9, 'T', 0],[93.0, 0.19, ',', 1]

SrFeO(3-x)
###Magnetoresistance Effects in SrFeO(3-x): Dependence on Phase Composition and Relation to Magnetic and Charge Order|P. Adler,A. Lebon,V. Damljanovic,C. Ulrich,C. Bernhard,A. V. Boris,A. Maljuk,C. T. Lin,B. Keimer###
(1363311, 1363318)
 The MR effects inSrFeO(3-x) differ from those in manganites as no ferromagnetic states areinvolved.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[241.0, 25, '%', 5],[236.0, 9, 'T', 5],[223.0, 60, 'K', 5],[202.0, 60, 'K', 4],[124.0, 70, 'K', 3],[102.0, 90, '%', 3],[98.0, 9, 'T', 3],[59.0, 0.19, ',', 2]

S
###Three--body Correlation Effects on the Spin Dynamics of Double--Exchange Ferromagnets|M. D. Kapetanakis,A. Manousaki,I. E. Perakis###
(1363437, 1363437)
 Our theory recovers theRandom Phase approximation and 1/S expansion results as limiting cases and canbe used to study the intermediate exchange coupling and electron concentrationregime relevant to the manganites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Three--body Correlation Effects on the Spin Dynamics of Double--Exchange Ferromagnets|M. D. Kapetanakis,A. Manousaki,I. E. Perakis###
(1363488, 1363488)
 In particular, we treat exactly the longrange three--body correlations between a Fermi sea electron--hole pair and amagnon excitation and show that they strongly affect the spin dynamics in theparameter range relevant to experiments in the manganites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Three--body Correlation Effects on the Spin Dynamics of Double--Exchange Ferromagnets|M. D. Kapetanakis,A. Manousaki,I. E. Perakis###
(1363617, 1363617)
 In addition to a decrease in themagnon stiffness, we obtain an instability of the ferromagnetic state againstspin wave excitations close to the Brillouin zone boundary.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Interface bonding of a ferromagnetic/semiconductor junction : a photoemission study of Fe/ZnSe(001)|M. Eddrief,M. Marangolo,V. H. Etgens,S. Ustaze,F. Sirotti,M. Mulazzi,G. Panaccione,D. H. Mosca,B. Lepine,P. Schieffer###
(1363833, 1363833)
 We have probed the interface of a ferromagnetic/semiconductor (FM<missing VAR>/SC)heterojunction by a combined high resolution photoemission spectroscopy andx<missing VAR>-ray photoelectron diffraction study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[365.0, 10, 'monolayers', 7],[375.0, 1508, ';', 8]

C
###Interface bonding of a ferromagnetic/semiconductor junction : a photoemission study of Fe/ZnSe(001)|M. Eddrief,M. Marangolo,V. H. Etgens,S. Ustaze,F. Sirotti,M. Mulazzi,G. Panaccione,D. H. Mosca,B. Lepine,P. Schieffer###
(1363837, 1363837)
 We have probed the interface of a ferromagnetic/semiconductor (FM<missing VAR>/SC)heterojunction by a combined high resolution photoemission spectroscopy andx<missing VAR>-ray photoelectron diffraction study.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[361.0, 10, 'monolayers', 7],[371.0, 1508, ';', 8]

Fe
###Interface bonding of a ferromagnetic/semiconductor junction : a photoemission study of Fe/ZnSe(001)|M. Eddrief,M. Marangolo,V. H. Etgens,S. Ustaze,F. Sirotti,M. Mulazzi,G. Panaccione,D. H. Mosca,B. Lepine,P. Schieffer###
(1363978, 1363978)
 We show that the Fe contact with ZnSe induces a chemicalconversion of the ZnSe outermost atomic layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[220.0, 10, 'monolayers', 4],[230.0, 1508, ';', 5]

ZnSe
###Interface bonding of a ferromagnetic/semiconductor junction : a photoemission study of Fe/ZnSe(001)|M. Eddrief,M. Marangolo,V. H. Etgens,S. Ustaze,F. Sirotti,M. Mulazzi,G. Panaccione,D. H. Mosca,B. Lepine,P. Schieffer###
(1363984, 1363985)
 We show that the Fe contact with ZnSe induces a chemicalconversion of the ZnSe outermost atomic layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[213.0, 10, 'monolayers', 4],[223.0, 1508, ';', 5]

ZnSe
###Interface bonding of a ferromagnetic/semiconductor junction : a photoemission study of Fe/ZnSe(001)|M. Eddrief,M. Marangolo,V. H. Etgens,S. Ustaze,F. Sirotti,M. Mulazzi,G. Panaccione,D. H. Mosca,B. Lepine,P. Schieffer###
(1364000, 1364001)
 We show that the Fe contact with ZnSe induces a chemicalconversion of the ZnSe outermost atomic layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[197.0, 10, 'monolayers', 4],[207.0, 1508, ';', 5]

Fe
###Interface bonding of a ferromagnetic/semiconductor junction : a photoemission study of Fe/ZnSe(001)|M. Eddrief,M. Marangolo,V. H. Etgens,S. Ustaze,F. Sirotti,M. Mulazzi,G. Panaccione,D. H. Mosca,B. Lepine,P. Schieffer###
(1364039, 1364039)
 The main driving force thatinduces this rearrangement is the requirement for a stable Fe-Se bonding at theinterface and a Se monolayer that floats at the Fe growth front.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[159.0, 10, 'monolayers', 3],[169.0, 1508, ';', 4]

Se
###Interface bonding of a ferromagnetic/semiconductor junction : a photoemission study of Fe/ZnSe(001)|M. Eddrief,M. Marangolo,V. H. Etgens,S. Ustaze,F. Sirotti,M. Mulazzi,G. Panaccione,D. H. Mosca,B. Lepine,P. Schieffer###
(1364041, 1364041)
 The main driving force thatinduces this rearrangement is the requirement for a stable Fe-Se bonding at theinterface and a Se monolayer that floats at the Fe growth front.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 10, 'monolayers', 3],[167.0, 1508, ';', 4]

Se
###Interface bonding of a ferromagnetic/semiconductor junction : a photoemission study of Fe/ZnSe(001)|M. Eddrief,M. Marangolo,V. H. Etgens,S. Ustaze,F. Sirotti,M. Mulazzi,G. Panaccione,D. H. Mosca,B. Lepine,P. Schieffer###
(1364056, 1364056)
 The main driving force thatinduces this rearrangement is the requirement for a stable Fe-Se bonding at theinterface and a Se monolayer that floats at the Fe growth front.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 10, 'monolayers', 3],[152.0, 1508, ';', 4]

Fe
###Interface bonding of a ferromagnetic/semiconductor junction : a photoemission study of Fe/ZnSe(001)|M. Eddrief,M. Marangolo,V. H. Etgens,S. Ustaze,F. Sirotti,M. Mulazzi,G. Panaccione,D. H. Mosca,B. Lepine,P. Schieffer###
(1364068, 1364068)
 The main driving force thatinduces this rearrangement is the requirement for a stable Fe-Se bonding at theinterface and a Se monolayer that floats at the Fe growth front.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 10, 'monolayers', 3],[140.0, 1508, ';', 4]

Zn
###Interface bonding of a ferromagnetic/semiconductor junction : a photoemission study of Fe/ZnSe(001)|M. Eddrief,M. Marangolo,V. H. Etgens,S. Ustaze,F. Sirotti,M. Mulazzi,G. Panaccione,D. H. Mosca,B. Lepine,P. Schieffer###
(1364080, 1364080)
 The releasedZn atoms are incorporated in substitution in the Fe lattice position.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 10, 'monolayers', 2],[128.0, 1508, ';', 3]

Fe
###Interface bonding of a ferromagnetic/semiconductor junction : a photoemission study of Fe/ZnSe(001)|M. Eddrief,M. Marangolo,V. H. Etgens,S. Ustaze,F. Sirotti,M. Mulazzi,G. Panaccione,D. H. Mosca,B. Lepine,P. Schieffer###
(1364096, 1364096)
 The releasedZn atoms are incorporated in substitution in the Fe lattice position.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 10, 'monolayers', 2],[112.0, 1508, ';', 3]

ZnSe
###Interface bonding of a ferromagnetic/semiconductor junction : a photoemission study of Fe/ZnSe(001)|M. Eddrief,M. Marangolo,V. H. Etgens,S. Ustaze,F. Sirotti,M. Mulazzi,G. Panaccione,D. H. Mosca,B. Lepine,P. Schieffer###
(1364118, 1364119)
 Thisformation process is independent of the ZnSe surface termination (Zn or Se).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 10, 'monolayers', 1],[89.0, 1508, ';', 2]

Zn
###Interface bonding of a ferromagnetic/semiconductor junction : a photoemission study of Fe/ZnSe(001)|M. Eddrief,M. Marangolo,V. H. Etgens,S. Ustaze,F. Sirotti,M. Mulazzi,G. Panaccione,D. H. Mosca,B. Lepine,P. Schieffer###
(1364126, 1364126)
 Thisformation process is independent of the ZnSe surface termination (Zn or Se).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 10, 'monolayers', 1],[82.0, 1508, ';', 2]

Se
###Interface bonding of a ferromagnetic/semiconductor junction : a photoemission study of Fe/ZnSe(001)|M. Eddrief,M. Marangolo,V. H. Etgens,S. Ustaze,F. Sirotti,M. Mulazzi,G. Panaccione,D. H. Mosca,B. Lepine,P. Schieffer###
(1364130, 1364130)
 Thisformation process is independent of the ZnSe surface termination (Zn or Se).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 10, 'monolayers', 1],[78.0, 1508, ';', 2]

Fe
###Interface bonding of a ferromagnetic/semiconductor junction : a photoemission study of Fe/ZnSe(001)|M. Eddrief,M. Marangolo,V. H. Etgens,S. Ustaze,F. Sirotti,M. Mulazzi,G. Panaccione,D. H. Mosca,B. Lepine,P. Schieffer###
(1364137, 1364137)
The Fe valence-band evolution indicates that the d<missing VAR>-states at the Fermi levelshow up even at submonolayer Fe coverage but that the Fe bulk character is onlyrecovered above 10 monolayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 10, 'monolayers', 0],[71.0, 1508, ';', 1]

Fe
###Interface bonding of a ferromagnetic/semiconductor junction : a photoemission study of Fe/ZnSe(001)|M. Eddrief,M. Marangolo,V. H. Etgens,S. Ustaze,F. Sirotti,M. Mulazzi,G. Panaccione,D. H. Mosca,B. Lepine,P. Schieffer###
(1364174, 1364174)
The Fe valence-band evolution indicates that the d<missing VAR>-states at the Fermi levelshow up even at submonolayer Fe coverage but that the Fe bulk character is onlyrecovered above 10 monolayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 10, 'monolayers', 0],[34.0, 1508, ';', 1]

Fe
###Interface bonding of a ferromagnetic/semiconductor junction : a photoemission study of Fe/ZnSe(001)|M. Eddrief,M. Marangolo,V. H. Etgens,S. Ustaze,F. Sirotti,M. Mulazzi,G. Panaccione,D. H. Mosca,B. Lepine,P. Schieffer###
(1364184, 1364184)
The Fe valence-band evolution indicates that the d<missing VAR>-states at the Fermi levelshow up even at submonolayer Fe coverage but that the Fe bulk character is onlyrecovered above 10 monolayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 10, 'monolayers', 0],[24.0, 1508, ';', 1]

Fe
###Interface bonding of a ferromagnetic/semiconductor junction : a photoemission study of Fe/ZnSe(001)|M. Eddrief,M. Marangolo,V. H. Etgens,S. Ustaze,F. Sirotti,M. Mulazzi,G. Panaccione,D. H. Mosca,B. Lepine,P. Schieffer###
(1364206, 1364206)
 Indeed, the Fe 1508;1-band states,theoretically predicted to dominate the tunneling conductance of Fe/ZnSe/Fejunctions, are strongly modified at the FM<missing VAR>/SC interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 10, 'monolayers', 1],[2.0, 1508, ';', 0]

Fe/ZnSe/Fe
###Interface bonding of a ferromagnetic/semiconductor junction : a photoemission study of Fe/ZnSe(001)|M. Eddrief,M. Marangolo,V. H. Etgens,S. Ustaze,F. Sirotti,M. Mulazzi,G. Panaccione,D. H. Mosca,B. Lepine,P. Schieffer###
(1364234, 1364239)
 Indeed, the Fe 1508;1-band states,theoretically predicted to dominate the tunneling conductance of Fe/ZnSe/Fejunctions, are strongly modified at the FM<missing VAR>/SC interface.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[36.0, 10, 'monolayers', 1],[26.0, 1508, ';', 0]

F
###Interface bonding of a ferromagnetic/semiconductor junction : a photoemission study of Fe/ZnSe(001)|M. Eddrief,M. Marangolo,V. H. Etgens,S. Ustaze,F. Sirotti,M. Mulazzi,G. Panaccione,D. H. Mosca,B. Lepine,P. Schieffer###
(1364255, 1364255)
 Indeed, the Fe 1508;1-band states,theoretically predicted to dominate the tunneling conductance of Fe/ZnSe/Fejunctions, are strongly modified at the FM<missing VAR>/SC interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 10, 'monolayers', 1],[47.0, 1508, ';', 0]

SC
###Interface bonding of a ferromagnetic/semiconductor junction : a photoemission study of Fe/ZnSe(001)|M. Eddrief,M. Marangolo,V. H. Etgens,S. Ustaze,F. Sirotti,M. Mulazzi,G. Panaccione,D. H. Mosca,B. Lepine,P. Schieffer###
(1364258, 1364259)
 Indeed, the Fe 1508;1-band states,theoretically predicted to dominate the tunneling conductance of Fe/ZnSe/Fejunctions, are strongly modified at the FM<missing VAR>/SC interface.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 10, 'monolayers', 1],[50.0, 1508, ';', 0]

C
###Coulomb blockade anisotropic magnetoresistance: Singleelectronics meets spintronics|J. Wunderlich,T. Jungwirth,B. Kaestner,A. C. Irvine,K. Wang,N. Stone,U. Rana,A. D. Giddings,A. B. Shick,C. T. Foxon,R. P. Campion,D. A. Williams,B. L Gallagher###
(1364318, 1364318)
 Single-electronics and spintronics are among the most intensivelyinvestigated potential complements or alternatives to CM<missing VAR>OS electronics.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OS
###Coulomb blockade anisotropic magnetoresistance: Singleelectronics meets spintronics|J. Wunderlich,T. Jungwirth,B. Kaestner,A. C. Irvine,K. Wang,N. Stone,U. Rana,A. D. Giddings,A. B. Shick,C. T. Foxon,R. P. Campion,D. A. Williams,B. L Gallagher###
(1364320, 1364321)
 Single-electronics and spintronics are among the most intensivelyinvestigated potential complements or alternatives to CM<missing VAR>OS electronics.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Nanoscopic processes of Current Induced Switching in thin tunnel junctions|J. Ventura,J. P. Araujo,J. B. Sousa,Y. Liu,Z. Zhang,P. P. Freitas###
(1364693, 1364693)
 In magnetic nanostructures one usually uses a magnetic field to commutebetween two resistance (R) states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[207.0, 6.9, '%', 4]

(CIS)
###Nanoscopic processes of Current Induced Switching in thin tunnel junctions|J. Ventura,J. P. Araujo,J. B. Sousa,Y. Liu,Z. Zhang,P. P. Freitas###
(1364785, 1364789)
 Such Current Induced Switching (CIS) was recentlyobserved in thin magnetic tunnel junctions, and attributed to electromigrationof atoms into/out of the insulator.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 6.9, '%', 2]

MnIr/CoFe/AlO
###Nanoscopic processes of Current Induced Switching in thin tunnel junctions|J. Ventura,J. P. Araujo,J. B. Sousa,Y. Liu,Z. Zhang,P. P. Freitas###
(1364863, 1364870)
 Here we study the Current InducedSwitching, electrical resistance, and magnetoresistance of thinMnIr/CoFe/AlOx<missing VAR>/CoFe tunnel junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[30.0, 6.9, '%', 1]

CoFe
###Nanoscopic processes of Current Induced Switching in thin tunnel junctions|J. Ventura,J. P. Araujo,J. B. Sousa,Y. Liu,Z. Zhang,P. P. Freitas###
(1364873, 1364874)
 Here we study the Current InducedSwitching, electrical resistance, and magnetoresistance of thinMnIr/CoFe/AlOx<missing VAR>/CoFe tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 6.9, '%', 1]

CIS
###Nanoscopic processes of Current Induced Switching in thin tunnel junctions|J. Ventura,J. P. Araujo,J. B. Sousa,Y. Liu,Z. Zhang,P. P. Freitas###
(1364883, 1364885)
 The CIS effect at room temperatureamounts to 6.9% R<missing VAR>-change between the high and low states and is attributed tonanostructural rearrangements of metallic ions in the electrode/barrierinterfaces.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 6.9, '%', 0]

V
###Nanoscopic processes of Current Induced Switching in thin tunnel junctions|J. Ventura,J. P. Araujo,J. B. Sousa,Y. Liu,Z. Zhang,P. P. Freitas###
(1365013, 1365013)
 A low(high) energy barrier of sim0.13 e<missing VAR>V (sim0.85 e<missing VAR>V) was estimated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 6.9, '%', 2]

V
###Nanoscopic processes of Current Induced Switching in thin tunnel junctions|J. Ventura,J. P. Araujo,J. B. Sousa,Y. Liu,Z. Zhang,P. P. Freitas###
(1365020, 1365020)
 A low(high) energy barrier of sim0.13 e<missing VAR>V (sim0.85 e<missing VAR>V) was estimated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 6.9, '%', 2]

CIS
###Nanoscopic processes of Current Induced Switching in thin tunnel junctions|J. Ventura,J. P. Araujo,J. B. Sousa,Y. Liu,Z. Zhang,P. P. Freitas###
(1365112, 1365114)
 Measurements under an external magneticfield showed an additional intermediate R<missing VAR>-state due to the simultaneousconjugation of the MR (magnetic) and CIS (structural) effects.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[212.0, 6.9, '%', 4]

In
###Electron Transport through Disordered Domain Walls: Coherent and Incoherent Regimes|Peter E. Falloon,Rodolfo A. Jalabert,Dietmar Weinmann,Robert L. Stamps###
(1365402, 1365402)
 In the coherent case, areduction of weak localization, together with a suppression of spin-reversingscattering amplitudes, leads to an enhancement of conductance due to the domainwall in the regime of strong disorder.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

U
###Unconventional Density Waves in Organic Conductors and in Superconductors|Kazumi Maki,Balázs Dóra,Attila Virosztek###
(1365664, 1365664)
 Unconventional density waves (UD<missing VAR>W) are one of the ground states in metalliccrystalline solids and have been speculated already in 1968. However, morefocused studies on UD<missing VAR>W started only recently, perhaps after the identificationof the low temperature phase in alpha-(BEDT-TTF)2KHg(SCN)4 as unconventionalcharge density wave (UCD<missing VAR>W) in 2002. More recently, the metallic phase ofBechgaard salts (TMTSF)2X<missing VAR> with X<missing VAR>PF6 and ReO4 under both pressure andmagnetic field appears to be unconventional spin density wave (USD<missing VAR>W).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 1968.0, 'However', 0],[122.0, 2002.0, 'More', 0]

W
###Unconventional Density Waves in Organic Conductors and in Superconductors|Kazumi Maki,Balázs Dóra,Attila Virosztek###
(1365666, 1365666)
 Unconventional density waves (UD<missing VAR>W) are one of the ground states in metalliccrystalline solids and have been speculated already in 1968. However, morefocused studies on UD<missing VAR>W started only recently, perhaps after the identificationof the low temperature phase in alpha-(BEDT-TTF)2KHg(SCN)4 as unconventionalcharge density wave (UCD<missing VAR>W) in 2002. More recently, the metallic phase ofBechgaard salts (TMTSF)2X<missing VAR> with X<missing VAR>PF6 and ReO4 under both pressure andmagnetic field appears to be unconventional spin density wave (USD<missing VAR>W).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 1968.0, 'However', 0],[120.0, 2002.0, 'More', 0]

U
###Unconventional Density Waves in Organic Conductors and in Superconductors|Kazumi Maki,Balázs Dóra,Attila Virosztek###
(1365713, 1365713)
 Unconventional density waves (UD<missing VAR>W) are one of the ground states in metalliccrystalline solids and have been speculated already in 1968. However, morefocused studies on UD<missing VAR>W started only recently, perhaps after the identificationof the low temperature phase in alpha-(BEDT-TTF)2KHg(SCN)4 as unconventionalcharge density wave (UCD<missing VAR>W) in 2002. More recently, the metallic phase ofBechgaard salts (TMTSF)2X<missing VAR> with X<missing VAR>PF6 and ReO4 under both pressure andmagnetic field appears to be unconventional spin density wave (USD<missing VAR>W).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 1968.0, 'However', 0],[73.0, 2002.0, 'More', 0]

W
###Unconventional Density Waves in Organic Conductors and in Superconductors|Kazumi Maki,Balázs Dóra,Attila Virosztek###
(1365715, 1365715)
 Unconventional density waves (UD<missing VAR>W) are one of the ground states in metalliccrystalline solids and have been speculated already in 1968. However, morefocused studies on UD<missing VAR>W started only recently, perhaps after the identificationof the low temperature phase in alpha-(BEDT-TTF)2KHg(SCN)4 as unconventionalcharge density wave (UCD<missing VAR>W) in 2002. More recently, the metallic phase ofBechgaard salts (TMTSF)2X<missing VAR> with X<missing VAR>PF6 and ReO4 under both pressure andmagnetic field appears to be unconventional spin density wave (USD<missing VAR>W).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 1968.0, 'However', 0],[71.0, 2002.0, 'More', 0]

B
###Unconventional Density Waves in Organic Conductors and in Superconductors|Kazumi Maki,Balázs Dóra,Attila Virosztek###
(1365748, 1365748)
 Unconventional density waves (UD<missing VAR>W) are one of the ground states in metalliccrystalline solids and have been speculated already in 1968. However, morefocused studies on UD<missing VAR>W started only recently, perhaps after the identificationof the low temperature phase in alpha-(BEDT-TTF)2KHg(SCN)4 as unconventionalcharge density wave (UCD<missing VAR>W) in 2002. More recently, the metallic phase ofBechgaard salts (TMTSF)2X<missing VAR> with X<missing VAR>PF6 and ReO4 under both pressure andmagnetic field appears to be unconventional spin density wave (USD<missing VAR>W).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 1968.0, 'However', 0],[38.0, 2002.0, 'More', 0]

F
###Unconventional Density Waves in Organic Conductors and in Superconductors|Kazumi Maki,Balázs Dóra,Attila Virosztek###
(1365755, 1365755)
 Unconventional density waves (UD<missing VAR>W) are one of the ground states in metalliccrystalline solids and have been speculated already in 1968. However, morefocused studies on UD<missing VAR>W started only recently, perhaps after the identificationof the low temperature phase in alpha-(BEDT-TTF)2KHg(SCN)4 as unconventionalcharge density wave (UCD<missing VAR>W) in 2002. More recently, the metallic phase ofBechgaard salts (TMTSF)2X<missing VAR> with X<missing VAR>PF6 and ReO4 under both pressure andmagnetic field appears to be unconventional spin density wave (USD<missing VAR>W).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 1968.0, 'However', 0],[31.0, 2002.0, 'More', 0]

KHg(SCN)4
###Unconventional Density Waves in Organic Conductors and in Superconductors|Kazumi Maki,Balázs Dóra,Attila Virosztek###
(1365758, 1365765)
 Unconventional density waves (UD<missing VAR>W) are one of the ground states in metalliccrystalline solids and have been speculated already in 1968. However, morefocused studies on UD<missing VAR>W started only recently, perhaps after the identificationof the low temperature phase in alpha-(BEDT-TTF)2KHg(SCN)4 as unconventionalcharge density wave (UCD<missing VAR>W) in 2002. More recently, the metallic phase ofBechgaard salts (TMTSF)2X<missing VAR> with X<missing VAR>PF6 and ReO4 under both pressure andmagnetic field appears to be unconventional spin density wave (USD<missing VAR>W).
Featurization terminated normally.
0,0,0,0,0,0.2857142857142857,0.2857142857142857,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0.07142857142857142,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07142857142857142,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 1968.0, 'However', 0],[21.0, 2002.0, 'More', 0]

UC
###Unconventional Density Waves in Organic Conductors and in Superconductors|Kazumi Maki,Balázs Dóra,Attila Virosztek###
(1365779, 1365780)
 Unconventional density waves (UD<missing VAR>W) are one of the ground states in metalliccrystalline solids and have been speculated already in 1968. However, morefocused studies on UD<missing VAR>W started only recently, perhaps after the identificationof the low temperature phase in alpha-(BEDT-TTF)2KHg(SCN)4 as unconventionalcharge density wave (UCD<missing VAR>W) in 2002. More recently, the metallic phase ofBechgaard salts (TMTSF)2X<missing VAR> with X<missing VAR>PF6 and ReO4 under both pressure andmagnetic field appears to be unconventional spin density wave (USD<missing VAR>W).
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
[78.0, 1968.0, 'However', 0],[6.0, 2002.0, 'More', 0]

W
###Unconventional Density Waves in Organic Conductors and in Superconductors|Kazumi Maki,Balázs Dóra,Attila Virosztek###
(1365782, 1365782)
 Unconventional density waves (UD<missing VAR>W) are one of the ground states in metalliccrystalline solids and have been speculated already in 1968. However, morefocused studies on UD<missing VAR>W started only recently, perhaps after the identificationof the low temperature phase in alpha-(BEDT-TTF)2KHg(SCN)4 as unconventionalcharge density wave (UCD<missing VAR>W) in 2002. More recently, the metallic phase ofBechgaard salts (TMTSF)2X<missing VAR> with X<missing VAR>PF6 and ReO4 under both pressure andmagnetic field appears to be unconventional spin density wave (USD<missing VAR>W).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 1968.0, 'However', 0],[4.0, 2002.0, 'More', 0]

F
###Unconventional Density Waves in Organic Conductors and in Superconductors|Kazumi Maki,Balázs Dóra,Attila Virosztek###
(1365809, 1365809)
 Unconventional density waves (UD<missing VAR>W) are one of the ground states in metalliccrystalline solids and have been speculated already in 1968. However, morefocused studies on UD<missing VAR>W started only recently, perhaps after the identificationof the low temperature phase in alpha-(BEDT-TTF)2KHg(SCN)4 as unconventionalcharge density wave (UCD<missing VAR>W) in 2002. More recently, the metallic phase ofBechgaard salts (TMTSF)2X<missing VAR> with X<missing VAR>PF6 and ReO4 under both pressure andmagnetic field appears to be unconventional spin density wave (USD<missing VAR>W).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 1968.0, 'However', 0],[23.0, 2002.0, 'More', 0]

PF6
###Unconventional Density Waves in Organic Conductors and in Superconductors|Kazumi Maki,Balázs Dóra,Attila Virosztek###
(1365817, 1365819)
 Unconventional density waves (UD<missing VAR>W) are one of the ground states in metalliccrystalline solids and have been speculated already in 1968. However, morefocused studies on UD<missing VAR>W started only recently, perhaps after the identificationof the low temperature phase in alpha-(BEDT-TTF)2KHg(SCN)4 as unconventionalcharge density wave (UCD<missing VAR>W) in 2002. More recently, the metallic phase ofBechgaard salts (TMTSF)2X<missing VAR> with X<missing VAR>PF6 and ReO4 under both pressure andmagnetic field appears to be unconventional spin density wave (USD<missing VAR>W).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.8571428571428571,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 1968.0, 'However', 0],[31.0, 2002.0, 'More', 0]

ReO4
###Unconventional Density Waves in Organic Conductors and in Superconductors|Kazumi Maki,Balázs Dóra,Attila Virosztek###
(1365823, 1365825)
 Unconventional density waves (UD<missing VAR>W) are one of the ground states in metalliccrystalline solids and have been speculated already in 1968. However, morefocused studies on UD<missing VAR>W started only recently, perhaps after the identificationof the low temperature phase in alpha-(BEDT-TTF)2KHg(SCN)4 as unconventionalcharge density wave (UCD<missing VAR>W) in 2002. More recently, the metallic phase ofBechgaard salts (TMTSF)2X<missing VAR> with X<missing VAR>PF6 and ReO4 under both pressure andmagnetic field appears to be unconventional spin density wave (USD<missing VAR>W).
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 1968.0, 'However', 0],[37.0, 2002.0, 'More', 0]

US
###Unconventional Density Waves in Organic Conductors and in Superconductors|Kazumi Maki,Balázs Dóra,Attila Virosztek###
(1365855, 1365856)
 Unconventional density waves (UD<missing VAR>W) are one of the ground states in metalliccrystalline solids and have been speculated already in 1968. However, morefocused studies on UD<missing VAR>W started only recently, perhaps after the identificationof the low temperature phase in alpha-(BEDT-TTF)2KHg(SCN)4 as unconventionalcharge density wave (UCD<missing VAR>W) in 2002. More recently, the metallic phase ofBechgaard salts (TMTSF)2X<missing VAR> with X<missing VAR>PF6 and ReO4 under both pressure andmagnetic field appears to be unconventional spin density wave (USD<missing VAR>W).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
[154.0, 1968.0, 'However', 0],[69.0, 2002.0, 'More', 0]

W
###Unconventional Density Waves in Organic Conductors and in Superconductors|Kazumi Maki,Balázs Dóra,Attila Virosztek###
(1365858, 1365858)
 Unconventional density waves (UD<missing VAR>W) are one of the ground states in metalliccrystalline solids and have been speculated already in 1968. However, morefocused studies on UD<missing VAR>W started only recently, perhaps after the identificationof the low temperature phase in alpha-(BEDT-TTF)2KHg(SCN)4 as unconventionalcharge density wave (UCD<missing VAR>W) in 2002. More recently, the metallic phase ofBechgaard salts (TMTSF)2X<missing VAR> with X<missing VAR>PF6 and ReO4 under both pressure andmagnetic field appears to be unconventional spin density wave (USD<missing VAR>W).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 1968.0, 'However', 0],[72.0, 2002.0, 'More', 0]

SCO
###Unconventional Density Waves in Organic Conductors and in Superconductors|Kazumi Maki,Balázs Dóra,Attila Virosztek###
(1365879, 1365881)
 Thepseudogap regime of high Tc superconductors L<missing VAR>SCO, YBCO, Bi2212 and the one inCeCoIn5 belong to d<missing VAR>-wave density waves (d-DW).
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 1968.0, 'However', 1],[93.0, 2002.0, 'More', 1]

YBCO
###Unconventional Density Waves in Organic Conductors and in Superconductors|Kazumi Maki,Balázs Dóra,Attila Virosztek###
(1365884, 1365887)
 Thepseudogap regime of high Tc superconductors L<missing VAR>SCO, YBCO, Bi2212 and the one inCeCoIn5 belong to d<missing VAR>-wave density waves (d-DW).
Featurization terminated normally.
0,0,0,0,0.25,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[183.0, 1968.0, 'However', 1],[98.0, 2002.0, 'More', 1]

Bi2212
###Unconventional Density Waves in Organic Conductors and in Superconductors|Kazumi Maki,Balázs Dóra,Attila Virosztek###
(1365890, 1365891)
 Thepseudogap regime of high Tc superconductors L<missing VAR>SCO, YBCO, Bi2212 and the one inCeCoIn5 belong to d<missing VAR>-wave density waves (d-DW).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[189.0, 1968.0, 'However', 1],[104.0, 2002.0, 'More', 1]

CeCoIn5
###Unconventional Density Waves in Organic Conductors and in Superconductors|Kazumi Maki,Balázs Dóra,Attila Virosztek###
(1365902, 1365905)
 Thepseudogap regime of high Tc superconductors L<missing VAR>SCO, YBCO, Bi2212 and the one inCeCoIn5 belong to d<missing VAR>-wave density waves (d-DW).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7142857142857143,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[201.0, 1968.0, 'However', 1],[116.0, 2002.0, 'More', 1]

W
###Unconventional Density Waves in Organic Conductors and in Superconductors|Kazumi Maki,Balázs Dóra,Attila Virosztek###
(1365923, 1365923)
 Thepseudogap regime of high Tc superconductors L<missing VAR>SCO, YBCO, Bi2212 and the one inCeCoIn5 belong to d<missing VAR>-wave density waves (d-DW).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[222.0, 1968.0, 'However', 1],[137.0, 2002.0, 'More', 1]

In
###Unconventional Density Waves in Organic Conductors and in Superconductors|Kazumi Maki,Balázs Dóra,Attila Virosztek###
(1365930, 1365930)
  In these identifications, the angular dependent magnetoresistance and thegiant Nernst effect have played the crucial role.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[229.0, 1968.0, 'However', 2],[144.0, 2002.0, 'More', 2]

U
###Unconventional Density Waves in Organic Conductors and in Superconductors|Kazumi Maki,Balázs Dóra,Attila Virosztek###
(1365994, 1365994)
 These are the simplestmanifestations of the Landau quantization of quasiparticle energy in UD<missing VAR>W in thepresence of magnetic field (the Nersesyan effect).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[293.0, 1968.0, 'However', 3],[208.0, 2002.0, 'More', 3]

W
###Unconventional Density Waves in Organic Conductors and in Superconductors|Kazumi Maki,Balázs Dóra,Attila Virosztek###
(1365996, 1365996)
 These are the simplestmanifestations of the Landau quantization of quasiparticle energy in UD<missing VAR>W in thepresence of magnetic field (the Nersesyan effect).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[295.0, 1968.0, 'However', 3],[210.0, 2002.0, 'More', 3]

U
###Unconventional Density Waves in Organic Conductors and in Superconductors|Kazumi Maki,Balázs Dóra,Attila Virosztek###
(1366028, 1366028)
 Also we speculate that UD<missing VAR>Wwill be most likely found in alpha-(BEDT-TTF)2I3, alpha-(BEDT-TTF)2I2Br,kappa-(BEDT-TTF)2Cu(NCS)2, kappa-(BEDT-TTF)2Cu(CN)2Br,lambda-(BEDT)2GaCl4 and in many other organic compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[327.0, 1968.0, 'However', 4],[242.0, 2002.0, 'More', 4]

W
###Unconventional Density Waves in Organic Conductors and in Superconductors|Kazumi Maki,Balázs Dóra,Attila Virosztek###
(1366030, 1366030)
 Also we speculate that UD<missing VAR>Wwill be most likely found in alpha-(BEDT-TTF)2I3, alpha-(BEDT-TTF)2I2Br,kappa-(BEDT-TTF)2Cu(NCS)2, kappa-(BEDT-TTF)2Cu(CN)2Br,lambda-(BEDT)2GaCl4 and in many other organic compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[329.0, 1968.0, 'However', 4],[244.0, 2002.0, 'More', 4]

B
###Unconventional Density Waves in Organic Conductors and in Superconductors|Kazumi Maki,Balázs Dóra,Attila Virosztek###
(1366048, 1366048)
 Also we speculate that UD<missing VAR>Wwill be most likely found in alpha-(BEDT-TTF)2I3, alpha-(BEDT-TTF)2I2Br,kappa-(BEDT-TTF)2Cu(NCS)2, kappa-(BEDT-TTF)2Cu(CN)2Br,lambda-(BEDT)2GaCl4 and in many other organic compounds.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[347.0, 1968.0, 'However', 4],[262.0, 2002.0, 'More', 4]

F
###Unconventional Density Waves in Organic Conductors and in Superconductors|Kazumi Maki,Balázs Dóra,Attila Virosztek###
(1366055, 1366055)
 Also we speculate that UD<missing VAR>Wwill be most likely found in alpha-(BEDT-TTF)2I3, alpha-(BEDT-TTF)2I2Br,kappa-(BEDT-TTF)2Cu(NCS)2, kappa-(BEDT-TTF)2Cu(CN)2Br,lambda-(BEDT)2GaCl4 and in many other organic compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[354.0, 1968.0, 'However', 4],[269.0, 2002.0, 'More', 4]

I3
###Unconventional Density Waves in Organic Conductors and in Superconductors|Kazumi Maki,Balázs Dóra,Attila Virosztek###
(1366058, 1366059)
 Also we speculate that UD<missing VAR>Wwill be most likely found in alpha-(BEDT-TTF)2I3, alpha-(BEDT-TTF)2I2Br,kappa-(BEDT-TTF)2Cu(NCS)2, kappa-(BEDT-TTF)2Cu(CN)2Br,lambda-(BEDT)2GaCl4 and in many other organic compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[357.0, 1968.0, 'However', 4],[272.0, 2002.0, 'More', 4]

B
###Unconventional Density Waves in Organic Conductors and in Superconductors|Kazumi Maki,Balázs Dóra,Attila Virosztek###
(1366065, 1366065)
 Also we speculate that UD<missing VAR>Wwill be most likely found in alpha-(BEDT-TTF)2I3, alpha-(BEDT-TTF)2I2Br,kappa-(BEDT-TTF)2Cu(NCS)2, kappa-(BEDT-TTF)2Cu(CN)2Br,lambda-(BEDT)2GaCl4 and in many other organic compounds.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[364.0, 1968.0, 'However', 4],[279.0, 2002.0, 'More', 4]

F
###Unconventional Density Waves in Organic Conductors and in Superconductors|Kazumi Maki,Balázs Dóra,Attila Virosztek###
(1366072, 1366072)
 Also we speculate that UD<missing VAR>Wwill be most likely found in alpha-(BEDT-TTF)2I3, alpha-(BEDT-TTF)2I2Br,kappa-(BEDT-TTF)2Cu(NCS)2, kappa-(BEDT-TTF)2Cu(CN)2Br,lambda-(BEDT)2GaCl4 and in many other organic compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[371.0, 1968.0, 'However', 4],[286.0, 2002.0, 'More', 4]

I2Br
###Unconventional Density Waves in Organic Conductors and in Superconductors|Kazumi Maki,Balázs Dóra,Attila Virosztek###
(1366075, 1366077)
 Also we speculate that UD<missing VAR>Wwill be most likely found in alpha-(BEDT-TTF)2I3, alpha-(BEDT-TTF)2I2Br,kappa-(BEDT-TTF)2Cu(NCS)2, kappa-(BEDT-TTF)2Cu(CN)2Br,lambda-(BEDT)2GaCl4 and in many other organic compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[374.0, 1968.0, 'However', 4],[289.0, 2002.0, 'More', 4]

B
###Unconventional Density Waves in Organic Conductors and in Superconductors|Kazumi Maki,Balázs Dóra,Attila Virosztek###
(1366084, 1366084)
 Also we speculate that UD<missing VAR>Wwill be most likely found in alpha-(BEDT-TTF)2I3, alpha-(BEDT-TTF)2I2Br,kappa-(BEDT-TTF)2Cu(NCS)2, kappa-(BEDT-TTF)2Cu(CN)2Br,lambda-(BEDT)2GaCl4 and in many other organic compounds.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[383.0, 1968.0, 'However', 4],[298.0, 2002.0, 'More', 4]

F
###Unconventional Density Waves in Organic Conductors and in Superconductors|Kazumi Maki,Balázs Dóra,Attila Virosztek###
(1366091, 1366091)
 Also we speculate that UD<missing VAR>Wwill be most likely found in alpha-(BEDT-TTF)2I3, alpha-(BEDT-TTF)2I2Br,kappa-(BEDT-TTF)2Cu(NCS)2, kappa-(BEDT-TTF)2Cu(CN)2Br,lambda-(BEDT)2GaCl4 and in many other organic compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[390.0, 1968.0, 'However', 4],[305.0, 2002.0, 'More', 4]

Cu(NCS)2
###Unconventional Density Waves in Organic Conductors and in Superconductors|Kazumi Maki,Balázs Dóra,Attila Virosztek###
(1366094, 1366100)
 Also we speculate that UD<missing VAR>Wwill be most likely found in alpha-(BEDT-TTF)2I3, alpha-(BEDT-TTF)2I2Br,kappa-(BEDT-TTF)2Cu(NCS)2, kappa-(BEDT-TTF)2Cu(CN)2Br,lambda-(BEDT)2GaCl4 and in many other organic compounds.
Featurization terminated normally.
0,0,0,0,0,0.2857142857142857,0.2857142857142857,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[393.0, 1968.0, 'However', 4],[308.0, 2002.0, 'More', 4]

B
###Unconventional Density Waves in Organic Conductors and in Superconductors|Kazumi Maki,Balázs Dóra,Attila Virosztek###
(1366106, 1366106)
 Also we speculate that UD<missing VAR>Wwill be most likely found in alpha-(BEDT-TTF)2I3, alpha-(BEDT-TTF)2I2Br,kappa-(BEDT-TTF)2Cu(NCS)2, kappa-(BEDT-TTF)2Cu(CN)2Br,lambda-(BEDT)2GaCl4 and in many other organic compounds.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[405.0, 1968.0, 'However', 4],[320.0, 2002.0, 'More', 4]

F
###Unconventional Density Waves in Organic Conductors and in Superconductors|Kazumi Maki,Balázs Dóra,Attila Virosztek###
(1366113, 1366113)
 Also we speculate that UD<missing VAR>Wwill be most likely found in alpha-(BEDT-TTF)2I3, alpha-(BEDT-TTF)2I2Br,kappa-(BEDT-TTF)2Cu(NCS)2, kappa-(BEDT-TTF)2Cu(CN)2Br,lambda-(BEDT)2GaCl4 and in many other organic compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[412.0, 1968.0, 'However', 4],[327.0, 2002.0, 'More', 4]

Cu(CN)2Br
###Unconventional Density Waves in Organic Conductors and in Superconductors|Kazumi Maki,Balázs Dóra,Attila Virosztek###
(1366116, 1366122)
 Also we speculate that UD<missing VAR>Wwill be most likely found in alpha-(BEDT-TTF)2I3, alpha-(BEDT-TTF)2I2Br,kappa-(BEDT-TTF)2Cu(NCS)2, kappa-(BEDT-TTF)2Cu(CN)2Br,lambda-(BEDT)2GaCl4 and in many other organic compounds.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[415.0, 1968.0, 'However', 4],[330.0, 2002.0, 'More', 4]

B
###Unconventional Density Waves in Organic Conductors and in Superconductors|Kazumi Maki,Balázs Dóra,Attila Virosztek###
(1366129, 1366129)
 Also we speculate that UD<missing VAR>Wwill be most likely found in alpha-(BEDT-TTF)2I3, alpha-(BEDT-TTF)2I2Br,kappa-(BEDT-TTF)2Cu(NCS)2, kappa-(BEDT-TTF)2Cu(CN)2Br,lambda-(BEDT)2GaCl4 and in many other organic compounds.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[428.0, 1968.0, 'However', 4],[343.0, 2002.0, 'More', 4]

GaCl4
###Unconventional Density Waves in Organic Conductors and in Superconductors|Kazumi Maki,Balázs Dóra,Attila Virosztek###
(1366135, 1366137)
 Also we speculate that UD<missing VAR>Wwill be most likely found in alpha-(BEDT-TTF)2I3, alpha-(BEDT-TTF)2I2Br,kappa-(BEDT-TTF)2Cu(NCS)2, kappa-(BEDT-TTF)2Cu(CN)2Br,lambda-(BEDT)2GaCl4 and in many other organic compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[434.0, 1968.0, 'However', 4],[349.0, 2002.0, 'More', 4]

(FSF)
###Ballistic transport in ferromagnet-superconductor-ferromagnet trilayers with arbitrary orientation of magnetizations|Milos Bozovic,Zoran Radovic###
(1366199, 1366203)
 Transport phenomena in clean ferromagnet-superconductor-ferromagnet (FSF)trilayers are studied theoretically for a general case of arbitrary orientationof in-plane magnetizations and interface transparencies.
Featurization successful!
0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FSF
###Ballistic transport in ferromagnet-superconductor-ferromagnet trilayers with arbitrary orientation of magnetizations|Milos Bozovic,Zoran Radovic###
(1366406, 1366408)
 Spin-triplet paircorrelations in FSF heterostructures induced by non-collinearity ofmagnetizations are investigated by solving the Gorkov equations in the cleanlimit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FSF
###Ballistic transport in ferromagnet-superconductor-ferromagnet trilayers with arbitrary orientation of magnetizations|Milos Bozovic,Zoran Radovic###
(1366454, 1366456)
 Unlike diffusive FSF junctions, where the triplet correlations have along-range monotonic decay, we show that in clean ferromagnet-superconductorhybrids both singlet and triplet pair correlations induced in the F layers areoscillating and power-law decaying with the distance from the S-F interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Ballistic transport in ferromagnet-superconductor-ferromagnet trilayers with arbitrary orientation of magnetizations|Milos Bozovic,Zoran Radovic###
(1366518, 1366518)
 Unlike diffusive FSF junctions, where the triplet correlations have along-range monotonic decay, we show that in clean ferromagnet-superconductorhybrids both singlet and triplet pair correlations induced in the F layers areoscillating and power-law decaying with the distance from the S-F interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Ballistic transport in ferromagnet-superconductor-ferromagnet trilayers with arbitrary orientation of magnetizations|Milos Bozovic,Zoran Radovic###
(1366545, 1366545)
 Unlike diffusive FSF junctions, where the triplet correlations have along-range monotonic decay, we show that in clean ferromagnet-superconductorhybrids both singlet and triplet pair correlations induced in the F layers areoscillating and power-law decaying with the distance from the S-F interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Ballistic transport in ferromagnet-superconductor-ferromagnet trilayers with arbitrary orientation of magnetizations|Milos Bozovic,Zoran Radovic###
(1366547, 1366547)
 Unlike diffusive FSF junctions, where the triplet correlations have along-range monotonic decay, we show that in clean ferromagnet-superconductorhybrids both singlet and triplet pair correlations induced in the F layers areoscillating and power-law decaying with the distance from the S-F interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nd1-xTiO3
###The Anderson-Mott transition induced by hole-doping in Nd1-xTiO3|A. S. Sefat,J. E. Greedan,G. M. Luke,M. Niewczas,J. D. Garrett,H. Dabkowska,A. Dabkowski###
(1366578, 1366584)
The Anderson-Mott transition induced by hole-doping in Nd1-xTiO3.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[327.0, 15, 'K', 6]

Nd1-xTiO3
###The Anderson-Mott transition induced by hole-doping in Nd1-xTiO3|A. S. Sefat,J. E. Greedan,G. M. Luke,M. Niewczas,J. D. Garrett,H. Dabkowska,A. Dabkowski###
(1366626, 1366632)
 The insulator/metal transition induced by hole-doping due to neodymiumvacancies of the Mott- Hubbard antiferromagnetic insulator, Nd1-xTiO3, isstudied over the composition range 0.010(6) < x<missing VAR> < 0.243(10).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[279.0, 15, 'K', 5]

Nd3
###The Anderson-Mott transition induced by hole-doping in Nd1-xTiO3|A. S. Sefat,J. E. Greedan,G. M. Luke,M. Niewczas,J. D. Garrett,H. Dabkowska,A. Dabkowski###
(1366936, 1366937)
 For 0.074(9)< x<missing VAR> < 0.112(4), a weak negative magnetoresistance is found below  15 K and itis attributed to the interaction of conduction electrons with Nd3 magneticmoments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 15, 'K', 0]

Nd1-xTiO3
###The Anderson-Mott transition induced by hole-doping in Nd1-xTiO3|A. S. Sefat,J. E. Greedan,G. M. Luke,M. Niewczas,J. D. Garrett,H. Dabkowska,A. Dabkowski###
(1366968, 1366974)
 Combining information from our companion study of the magneticproperties of Nd1-xTiO3 solid solution, a phase diagram is proposed.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[57.0, 15, 'K', 1]

Nd1-x
###The Anderson-Mott transition induced by hole-doping in Nd1-xTiO3|A. S. Sefat,J. E. Greedan,G. M. Luke,M. Niewczas,J. D. Garrett,H. Dabkowska,A. Dabkowski###
(1367085, 1367088)
 Our results differ from conclusions drawn from asimilar study on the hole doped Nd1-xCaxTiO3 system which found theco-existence of antiferromagnetic order and metallic behavior and that the Motttransition occurs at a discrete doping level.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[174.0, 15, 'K', 3]

TiO3
###The Anderson-Mott transition induced by hole-doping in Nd1-xTiO3|A. S. Sefat,J. E. Greedan,G. M. Luke,M. Niewczas,J. D. Garrett,H. Dabkowska,A. Dabkowski###
(1367090, 1367092)
 Our results differ from conclusions drawn from asimilar study on the hole doped Nd1-xCaxTiO3 system which found theco-existence of antiferromagnetic order and metallic behavior and that the Motttransition occurs at a discrete doping level.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 15, 'K', 3]

AlO
###Dielectric breakdown in underoxidized magnetic tunnel junctions: Dependence on oxidation time and area|J. Ventura,R. Ferreira,J. B. Sousa,P. P. Freitas###
(1367202, 1367203)
 Magnetic tunnel junctions (MTJs) with partially oxidized 9 AAAlOx<missing VAR>-barriers were recently shown to have the necessary characteristics tobe used as magnetoresistive sensors in high-density storage devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Dielectric breakdown in underoxidized magnetic tunnel junctions: Dependence on oxidation time and area|J. Ventura,R. Ferreira,J. B. Sousa,P. P. Freitas###
(1367446, 1367446)
In fact, in the extremely underoxidized magnetic tunnel junctions, failure isexclusively related with extrinsic causes, independently of MTJ-area.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Al
###Dielectric breakdown in underoxidized magnetic tunnel junctions: Dependence on oxidation time and area|J. Ventura,R. Ferreira,J. B. Sousa,P. P. Freitas###
(1367543, 1367543)
 Theseresults are related with the presence of defects in the barrier (weak spotsthat lead to intrinsic breakdown) and of metallic unoxidized Alnanoconstrictions (leading to extrinsic breakdown).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###The origin of the spin glass transition in a model geometrically frustrated magnet|W. Bisson,A. S. Wills###
(1367622, 1367622)
 In magnetism its consequences underpin exotic andtechnologically important effects, such as, high temperature superconductivity,colossal magnetoresistence, and the anomalous Hall effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ReO4
###Angular magnetoresistance oscillations in quasi-one-dimensional organic conductors in the presence of a crystal superstructure|Anand Banerjee,Victor M. Yakovenko###
(1368081, 1368083)
 We study the effect of crystal superstructures, produced by orientationalordering of the ReO4 and ClO4 anions in the quasi-one-dimensional organicconductors (TMTSF)2ReO4 and (TMTSF)2ClO4, on the angular magnetoresistanceoscillations (AMRO) observed in these materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ClO4
###Angular magnetoresistance oscillations in quasi-one-dimensional organic conductors in the presence of a crystal superstructure|Anand Banerjee,Victor M. Yakovenko###
(1368087, 1368089)
 We study the effect of crystal superstructures, produced by orientationalordering of the ReO4 and ClO4 anions in the quasi-one-dimensional organicconductors (TMTSF)2ReO4 and (TMTSF)2ClO4, on the angular magnetoresistanceoscillations (AMRO) observed in these materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Angular magnetoresistance oscillations in quasi-one-dimensional organic conductors in the presence of a crystal superstructure|Anand Banerjee,Victor M. Yakovenko###
(1368113, 1368113)
 We study the effect of crystal superstructures, produced by orientationalordering of the ReO4 and ClO4 anions in the quasi-one-dimensional organicconductors (TMTSF)2ReO4 and (TMTSF)2ClO4, on the angular magnetoresistanceoscillations (AMRO) observed in these materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ReO4
###Angular magnetoresistance oscillations in quasi-one-dimensional organic conductors in the presence of a crystal superstructure|Anand Banerjee,Victor M. Yakovenko###
(1368116, 1368118)
 We study the effect of crystal superstructures, produced by orientationalordering of the ReO4 and ClO4 anions in the quasi-one-dimensional organicconductors (TMTSF)2ReO4 and (TMTSF)2ClO4, on the angular magnetoresistanceoscillations (AMRO) observed in these materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Angular magnetoresistance oscillations in quasi-one-dimensional organic conductors in the presence of a crystal superstructure|Anand Banerjee,Victor M. Yakovenko###
(1368127, 1368127)
 We study the effect of crystal superstructures, produced by orientationalordering of the ReO4 and ClO4 anions in the quasi-one-dimensional organicconductors (TMTSF)2ReO4 and (TMTSF)2ClO4, on the angular magnetoresistanceoscillations (AMRO) observed in these materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ClO4
###Angular magnetoresistance oscillations in quasi-one-dimensional organic conductors in the presence of a crystal superstructure|Anand Banerjee,Victor M. Yakovenko###
(1368130, 1368132)
 We study the effect of crystal superstructures, produced by orientationalordering of the ReO4 and ClO4 anions in the quasi-one-dimensional organicconductors (TMTSF)2ReO4 and (TMTSF)2ClO4, on the angular magnetoresistanceoscillations (AMRO) observed in these materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Angular magnetoresistance oscillations in quasi-one-dimensional organic conductors in the presence of a crystal superstructure|Anand Banerjee,Victor M. Yakovenko###
(1368150, 1368150)
 We study the effect of crystal superstructures, produced by orientationalordering of the ReO4 and ClO4 anions in the quasi-one-dimensional organicconductors (TMTSF)2ReO4 and (TMTSF)2ClO4, on the angular magnetoresistanceoscillations (AMRO) observed in these materials.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Angular magnetoresistance oscillations in quasi-one-dimensional organic conductors in the presence of a crystal superstructure|Anand Banerjee,Victor M. Yakovenko###
(1368268, 1368268)
 Different wave vectors of the anion ordering in(TMTSF)2ReO4 and (TMTSF)2ClO4 result in the odd and even Lebed angles, asobserved experimentally.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ReO4
###Angular magnetoresistance oscillations in quasi-one-dimensional organic conductors in the presence of a crystal superstructure|Anand Banerjee,Victor M. Yakovenko###
(1368271, 1368273)
 Different wave vectors of the anion ordering in(TMTSF)2ReO4 and (TMTSF)2ClO4 result in the odd and even Lebed angles, asobserved experimentally.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Angular magnetoresistance oscillations in quasi-one-dimensional organic conductors in the presence of a crystal superstructure|Anand Banerjee,Victor M. Yakovenko###
(1368282, 1368282)
 Different wave vectors of the anion ordering in(TMTSF)2ReO4 and (TMTSF)2ClO4 result in the odd and even Lebed angles, asobserved experimentally.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ClO4
###Angular magnetoresistance oscillations in quasi-one-dimensional organic conductors in the presence of a crystal superstructure|Anand Banerjee,Victor M. Yakovenko###
(1368285, 1368287)
 Different wave vectors of the anion ordering in(TMTSF)2ReO4 and (TMTSF)2ClO4 result in the odd and even Lebed angles, asobserved experimentally.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Angular magnetoresistance oscillations in quasi-one-dimensional organic conductors in the presence of a crystal superstructure|Anand Banerjee,Victor M. Yakovenko###
(1368430, 1368430)
 Thiseffect can be utilized to probe the anion ordering gaps in (TMTSF)2ClO4 and(TMTSF)2ReO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ClO4
###Angular magnetoresistance oscillations in quasi-one-dimensional organic conductors in the presence of a crystal superstructure|Anand Banerjee,Victor M. Yakovenko###
(1368433, 1368435)
 Thiseffect can be utilized to probe the anion ordering gaps in (TMTSF)2ClO4 and(TMTSF)2ReO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Angular magnetoresistance oscillations in quasi-one-dimensional organic conductors in the presence of a crystal superstructure|Anand Banerjee,Victor M. Yakovenko###
(1368445, 1368445)
 Thiseffect can be utilized to probe the anion ordering gaps in (TMTSF)2ClO4 and(TMTSF)2ReO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ReO4
###Angular magnetoresistance oscillations in quasi-one-dimensional organic conductors in the presence of a crystal superstructure|Anand Banerjee,Victor M. Yakovenko###
(1368448, 1368450)
 Thiseffect can be utilized to probe the anion ordering gaps in (TMTSF)2ClO4 and(TMTSF)2ReO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu(NCS)2
###Angular magnetoresistance oscillations in quasi-one-dimensional organic conductors in the presence of a crystal superstructure|Anand Banerjee,Victor M. Yakovenko###
(1368472, 1368478)
 An application of this effect to kappa-(ET)2Cu(NCS)2 is alsobriefly discussed.
Featurization terminated normally.
0,0,0,0,0,0.2857142857142857,0.2857142857142857,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgB2
###Systematic study of disorder induced by neutron irradiation in MgB2 thin films|V. Ferrando,I. Pallecchi,C. Tarantini,D. Marre,M. Putti,F. Gatti,H. U. Aebersold,E. Lehmann,E. Haanappel,I. Sheikin,X. X. Xi,P. Orgiani,C. Ferdeghini###
(1368516, 1368518)
Systematic study of disorder induced by neutron irradiation in MgB2 thin films.
Featurization terminated normally.
0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 1020, 'cm', 1],[115.0, 1.8, 'K', 3],[128.0, 1, 'to', 4],[129.0, 190, 'microohmcm', 4],[213.0, 45, 'T', 6],[346.0, 50, 'T', 8]

Tl2Ba2CuO6
###Tl2Ba2CuO6+d Brings Spectroscopic Probes Deep Into the Overdoped Regime of the High-Tc Cuprates|D. C. Peets,J. D. F. Mottershead,B. Wu,I. S. Elfimov,R. Liang,W. N. Hardy,D. A. Bonn,M. Raudsepp,N. J. C. Ingle,A Damascelli###
(1368945, 1368951)
Tl2Ba2CuO6d<missing VAR> Brings Spectroscopic Probes Deep Into the Overdoped Regime of the High-Tc Cuprates.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5454545454545454,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.09090909090909091,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###Tl2Ba2CuO6+d Brings Spectroscopic Probes Deep Into the Overdoped Regime of the High-Tc Cuprates|D. C. Peets,J. D. F. Mottershead,B. Wu,I. S. Elfimov,R. Liang,W. N. Hardy,D. A. Bonn,M. Raudsepp,N. J. C. Ingle,A Damascelli###
(1368976, 1368976)
Tl2Ba2CuO6d<missing VAR> Brings Spectroscopic Probes Deep Into the Overdoped Regime of the High-Tc Cuprates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Tl2Ba2CuO6+d Brings Spectroscopic Probes Deep Into the Overdoped Regime of the High-Tc Cuprates|D. C. Peets,J. D. F. Mottershead,B. Wu,I. S. Elfimov,R. Liang,W. N. Hardy,D. A. Bonn,M. Raudsepp,N. J. C. Ingle,A Damascelli###
(1369014, 1369014)
 Single-particle spectroscopic probes, such as scanning tunneling andangle-resolved photoemission spectroscopy (ARPES), have provided us withcrucial insights into the complex electronic structure of the high-Tc cuprates,in particular for the under and optimally doped regimes where high-qualitycrystals suitable for surface-sensitive experiments are available.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###Tl2Ba2CuO6+d Brings Spectroscopic Probes Deep Into the Overdoped Regime of the High-Tc Cuprates|D. C. Peets,J. D. F. Mottershead,B. Wu,I. S. Elfimov,R. Liang,W. N. Hardy,D. A. Bonn,M. Raudsepp,N. J. C. Ingle,A Damascelli###
(1369047, 1369047)
 Single-particle spectroscopic probes, such as scanning tunneling andangle-resolved photoemission spectroscopy (ARPES), have provided us withcrucial insights into the complex electronic structure of the high-Tc cuprates,in particular for the under and optimally doped regimes where high-qualitycrystals suitable for surface-sensitive experiments are available.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tl2Ba2CuO6
###Tl2Ba2CuO6+d Brings Spectroscopic Probes Deep Into the Overdoped Regime of the High-Tc Cuprates|D. C. Peets,J. D. F. Mottershead,B. Wu,I. S. Elfimov,R. Liang,W. N. Hardy,D. A. Bonn,M. Raudsepp,N. J. C. Ingle,A Damascelli###
(1369148, 1369154)
 Important breakthroughs could come from the study ofTl2Ba2CuO6d<missing VAR> (Tl2201), a structurally simple system whose doping level can betuned from optimal to extreme overdoping by varying the oxygen content.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5454545454545454,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.09090909090909091,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(Tl2201)
###Tl2Ba2CuO6+d Brings Spectroscopic Probes Deep Into the Overdoped Regime of the High-Tc Cuprates|D. C. Peets,J. D. F. Mottershead,B. Wu,I. S. Elfimov,R. Liang,W. N. Hardy,D. A. Bonn,M. Raudsepp,N. J. C. Ingle,A Damascelli###
(1369157, 1369160)
 Important breakthroughs could come from the study ofTl2Ba2CuO6d<missing VAR> (Tl2201), a structurally simple system whose doping level can betuned from optimal to extreme overdoping by varying the oxygen content.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tl2201
###Tl2Ba2CuO6+d Brings Spectroscopic Probes Deep Into the Overdoped Regime of the High-Tc Cuprates|D. C. Peets,J. D. F. Mottershead,B. Wu,I. S. Elfimov,R. Liang,W. N. Hardy,D. A. Bonn,M. Raudsepp,N. J. C. Ingle,A Damascelli###
(1369218, 1369219)
 We havegrown single crystals of Tl2201, which were then carefully annealed undercontrolled oxygen partial pressures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Tl2Ba2CuO6+d Brings Spectroscopic Probes Deep Into the Overdoped Regime of the High-Tc Cuprates|D. C. Peets,J. D. F. Mottershead,B. Wu,I. S. Elfimov,R. Liang,W. N. Hardy,D. A. Bonn,M. Raudsepp,N. J. C. Ingle,A Damascelli###
(1369295, 1369295)
These crystals have enabled the first successful ARPES study of both normal andsuperconducting-state electronic structure in Tl2201, allowing a directcomparison with the Fermi surface from magnetoresistance and the gap fromthermal conductivity experiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tl2201
###Tl2Ba2CuO6+d Brings Spectroscopic Probes Deep Into the Overdoped Regime of the High-Tc Cuprates|D. C. Peets,J. D. F. Mottershead,B. Wu,I. S. Elfimov,R. Liang,W. N. Hardy,D. A. Bonn,M. Raudsepp,N. J. C. Ingle,A Damascelli###
(1369318, 1369319)
These crystals have enabled the first successful ARPES study of both normal andsuperconducting-state electronic structure in Tl2201, allowing a directcomparison with the Fermi surface from magnetoresistance and the gap fromthermal conductivity experiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tl2201
###Tl2Ba2CuO6+d Brings Spectroscopic Probes Deep Into the Overdoped Regime of the High-Tc Cuprates|D. C. Peets,J. D. F. Mottershead,B. Wu,I. S. Elfimov,R. Liang,W. N. Hardy,D. A. Bonn,M. Raudsepp,N. J. C. Ingle,A Damascelli###
(1369363, 1369364)
 This establishes Tl2201 as the first high-Tccuprate for which a surface-sensitive single-particle spectroscopy and acomparable bulk transport technique have arrived at quantitative agreement on amajor feature such as the normal state Fermi surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###Tl2Ba2CuO6+d Brings Spectroscopic Probes Deep Into the Overdoped Regime of the High-Tc Cuprates|D. C. Peets,J. D. F. Mottershead,B. Wu,I. S. Elfimov,R. Liang,W. N. Hardy,D. A. Bonn,M. Raudsepp,N. J. C. Ingle,A Damascelli###
(1369374, 1369374)
 This establishes Tl2201 as the first high-Tccuprate for which a surface-sensitive single-particle spectroscopy and acomparable bulk transport technique have arrived at quantitative agreement on amajor feature such as the normal state Fermi surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Tl2Ba2CuO6+d Brings Spectroscopic Probes Deep Into the Overdoped Regime of the High-Tc Cuprates|D. C. Peets,J. D. F. Mottershead,B. Wu,I. S. Elfimov,R. Liang,W. N. Hardy,D. A. Bonn,M. Raudsepp,N. J. C. Ingle,A Damascelli###
(1369459, 1369459)
 The surprising momentumdependence of the ARPES lineshape is also discussed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Sr2CaCu2O8
###Collective Josephson vortex dynamics in a finite number of intrinsic Josephson junctions|Myung-Ho Bae,Jae-Hyun Choi,Hu-Jong Lee###
(1369553, 1369561)
 We report the experimental confirmation of the collective transverse plasmamodes excited by the Josephson vortex lattice in stacks of intrinsic Josephsonjunctions in Bi2Sr2CaCu2O8x<missing VAR> single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.06666666666666667,0,0,0,0,0,0,0,0,0.13333333333333333,0,0,0,0,0,0,0,0,0.13333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(H)
###Collective Josephson vortex dynamics in a finite number of intrinsic Josephson junctions|Myung-Ho Bae,Jae-Hyun Choi,Hu-Jong Lee###
(1369597, 1369599)
 Theexcitation was confirmed by analyzing the temperature (T) and magnetic field(H) dependencies of the multiple sub-branches in the Josephson-vortex-flowregion of the current-voltage characteristics of the system.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Collective Josephson vortex dynamics in a finite number of intrinsic Josephson junctions|Myung-Ho Bae,Jae-Hyun Choi,Hu-Jong Lee###
(1369643, 1369643)
 In the near-staticJosephson vortex state for a low tunneling bias current, pronouncedmagnetoresistance oscillations were observed, which represented atriangular-lattice vortex configuration along the c<missing VAR> axis.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Collective Josephson vortex dynamics in a finite number of intrinsic Josephson junctions|Myung-Ho Bae,Jae-Hyun Choi,Hu-Jong Lee###
(1369707, 1369707)
 In the dynamic vortexstate in a sufficiently high magnetic field and for a high bias current,splitting of a single Josephson vortex-flow branch into multiple sub-brancheswas observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Collective Josephson vortex dynamics in a finite number of intrinsic Josephson junctions|Myung-Ho Bae,Jae-Hyun Choi,Hu-Jong Lee###
(1369790, 1369790)
 Detailed examination of the sub-branches for varying H fieldreveals that sub-branches represent the different modes of the Josephson-vortexlattice along the c<missing VAR> axis, with varied configuration from a triangular to arectangular lattices.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BFO3
###Infrared and THz studies of polar phonons and improper magnetodielectric effect in multiferroic BFO3 ceramics|S. Kamba,D. Nuzhnyy,M. Savinov,J. Sebek,J. Petzelt,J. Prokleska,R. Haumont,J. Kreisel###
(1369944, 1369947)
Infrared and T<missing VAR>Hz studies of polar phonons and improper magnetodielectric effect in multiferroic BFO3 ceramics.
Featurization terminated normally.
0,0,0,0,0.2,0,0,0.6,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 950, 'K', 1],[68.0, 300, 'K', 1],[83.0, 9, 'T', 1],[87.0, 175, 'K', 2],[124.0, 1, 'MHz', 2],[176.0, 200, 'K', 4],[235.0, 88, ',', 7],[302.0, 175, 'K', 9]

BFO3
###Infrared and THz studies of polar phonons and improper magnetodielectric effect in multiferroic BFO3 ceramics|S. Kamba,D. Nuzhnyy,M. Savinov,J. Sebek,J. Petzelt,J. Prokleska,R. Haumont,J. Kreisel###
(1369952, 1369955)
 BFO3 ceramics were investigated by means of infrared reflectivity and timedomain T<missing VAR>Hz transmission spectroscopy at temperatures 20 - 950 K, and themagnetodielectric effect was studied at 10 - 300 K, with the magnetic field upto 9 T.
Featurization terminated normally.
0,0,0,0,0.2,0,0,0.6,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 950, 'K', 0],[60.0, 300, 'K', 0],[75.0, 9, 'T', 0],[79.0, 175, 'K', 1],[116.0, 1, 'MHz', 1],[168.0, 200, 'K', 3],[227.0, 88, ',', 6],[294.0, 175, 'K', 8]

At
###Infrared and THz studies of polar phonons and improper magnetodielectric effect in multiferroic BFO3 ceramics|S. Kamba,D. Nuzhnyy,M. Savinov,J. Sebek,J. Petzelt,J. Prokleska,R. Haumont,J. Kreisel###
(1370074, 1370074)
 Athigher temperatures, a giant low-frequency permittivity was observed, obviouslydue to the enhanced conductivity and possible Maxwell-Wagner contribution.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 950, 'K', 2],[59.0, 300, 'K', 2],[44.0, 9, 'T', 2],[40.0, 175, 'K', 1],[3.0, 1, 'MHz', 1],[49.0, 200, 'K', 1],[108.0, 88, ',', 4],[175.0, 175, 'K', 6]

F
###Coexisting tuneable fractions of glassy and equilibrium long-range-order phases in manganites|A. Banerjee,A. K. Pramanik,Kranti Kumar,P. Chaddah###
(1370408, 1370408)
 Antiferromagnetic-insulating(AF-I) and the ferromagnetic-metallic(FM-M)phases coexist in various half-doped manganites over a range of temperature andmagnetic field, and this is often believed to be an essential ingredient totheir colossal magnetoresistence.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[250.0, 1, 'st', 2]

I
###Coexisting tuneable fractions of glassy and equilibrium long-range-order phases in manganites|A. Banerjee,A. K. Pramanik,Kranti Kumar,P. Chaddah###
(1370410, 1370410)
 Antiferromagnetic-insulating(AF-I) and the ferromagnetic-metallic(FM-M)phases coexist in various half-doped manganites over a range of temperature andmagnetic field, and this is often believed to be an essential ingredient totheir colossal magnetoresistence.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[248.0, 1, 'st', 2]

F
###Coexisting tuneable fractions of glassy and equilibrium long-range-order phases in manganites|A. Banerjee,A. K. Pramanik,Kranti Kumar,P. Chaddah###
(1370421, 1370421)
 Antiferromagnetic-insulating(AF-I) and the ferromagnetic-metallic(FM-M)phases coexist in various half-doped manganites over a range of temperature andmagnetic field, and this is often believed to be an essential ingredient totheir colossal magnetoresistence.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[237.0, 1, 'st', 2]

H
###Coexisting tuneable fractions of glassy and equilibrium long-range-order phases in manganites|A. Banerjee,A. K. Pramanik,Kranti Kumar,P. Chaddah###
(1370578, 1370578)
 We present magnetization and resistivitymeasurements on Pr(0.5)Ca(0.5)Mn(0.975)Al(0.025)O(3) and Pr(0.5)Sr(0.5)MnO(3)showing that the fraction of the two coexisting phases at low-temperature inany specified measuring field H, can be continuously controlled by followingdesigned protocols traversing field-temperature space; for both materials theFM-M fraction rises under similar cooling paths.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 1, 'st', 1]

F
###Coexisting tuneable fractions of glassy and equilibrium long-range-order phases in manganites|A. Banerjee,A. K. Pramanik,Kranti Kumar,P. Chaddah###
(1370616, 1370616)
 We present magnetization and resistivitymeasurements on Pr(0.5)Ca(0.5)Mn(0.975)Al(0.025)O(3) and Pr(0.5)Sr(0.5)MnO(3)showing that the fraction of the two coexisting phases at low-temperature inany specified measuring field H, can be continuously controlled by followingdesigned protocols traversing field-temperature space; for both materials theFM-M fraction rises under similar cooling paths.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 1, 'st', 1]

F
###Coexisting tuneable fractions of glassy and equilibrium long-range-order phases in manganites|A. Banerjee,A. K. Pramanik,Kranti Kumar,P. Chaddah###
(1370668, 1370668)
 Constant-field temperaturevariations however show that the former sample undergoes a 1st order transitionfrom AF-I to FM-M with decreasing T<missing VAR>, while the latter undergoes the reversetransition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 1, 'st', 0]

I
###Coexisting tuneable fractions of glassy and equilibrium long-range-order phases in manganites|A. Banerjee,A. K. Pramanik,Kranti Kumar,P. Chaddah###
(1370670, 1370670)
 Constant-field temperaturevariations however show that the former sample undergoes a 1st order transitionfrom AF-I to FM-M with decreasing T<missing VAR>, while the latter undergoes the reversetransition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 1, 'st', 0]

F
###Coexisting tuneable fractions of glassy and equilibrium long-range-order phases in manganites|A. Banerjee,A. K. Pramanik,Kranti Kumar,P. Chaddah###
(1370674, 1370674)
 Constant-field temperaturevariations however show that the former sample undergoes a 1st order transitionfrom AF-I to FM-M with decreasing T<missing VAR>, while the latter undergoes the reversetransition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 1, 'st', 0]

F
###Coexisting tuneable fractions of glassy and equilibrium long-range-order phases in manganites|A. Banerjee,A. K. Pramanik,Kranti Kumar,P. Chaddah###
(1370774, 1370774)
 We suggest that the observed path-dependent phase-separated statesresult from the low-T<missing VAR> equilibrium phase coexisting with supercooled glass-likehigh temperature phase, where the low-T<missing VAR> equilibrium phases are actuallyhomogeneous FM-M and AF-I phases respectively for the two materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 1, 'st', 1]

F
###Coexisting tuneable fractions of glassy and equilibrium long-range-order phases in manganites|A. Banerjee,A. K. Pramanik,Kranti Kumar,P. Chaddah###
(1370782, 1370782)
 We suggest that the observed path-dependent phase-separated statesresult from the low-T<missing VAR> equilibrium phase coexisting with supercooled glass-likehigh temperature phase, where the low-T<missing VAR> equilibrium phases are actuallyhomogeneous FM-M and AF-I phases respectively for the two materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 1, 'st', 1]

I
###Coexisting tuneable fractions of glassy and equilibrium long-range-order phases in manganites|A. Banerjee,A. K. Pramanik,Kranti Kumar,P. Chaddah###
(1370784, 1370784)
 We suggest that the observed path-dependent phase-separated statesresult from the low-T<missing VAR> equilibrium phase coexisting with supercooled glass-likehigh temperature phase, where the low-T<missing VAR> equilibrium phases are actuallyhomogeneous FM-M and AF-I phases respectively for the two materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 1, 'st', 1]

CeAg2Ge2
###Anisotropic magnetic properties of CeAg$_2$Ge$_2$ single crystal|A. Thamizhavel,R. Kulkarni,S. K. Dhar###
(1370815, 1370819)
Anisotropic magnetic properties of CeAg2Ge2 single crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 4.6, 'K', 3],[179.0, 4, 'at', 4],[180.0, 20, 'K', 4],[274.0, 5, 'K', 5]

In
###Anisotropic magnetic properties of CeAg$_2$Ge$_2$ single crystal|A. Thamizhavel,R. Kulkarni,S. K. Dhar###
(1370826, 1370826)
 In order to investigate the anisotropic magnetic properties ofCeAg2Ge2, we have successfully grown the single crystals, for the firsttime, by high temperature solution growth (flux) method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 4.6, 'K', 2],[172.0, 4, 'at', 3],[173.0, 20, 'K', 3],[267.0, 5, 'K', 4]

CeAg2Ge2
###Anisotropic magnetic properties of CeAg$_2$Ge$_2$ single crystal|A. Thamizhavel,R. Kulkarni,S. K. Dhar###
(1370845, 1370849)
 In order to investigate the anisotropic magnetic properties ofCeAg2Ge2, we have successfully grown the single crystals, for the firsttime, by high temperature solution growth (flux) method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 4.6, 'K', 2],[149.0, 4, 'at', 3],[150.0, 20, 'K', 3],[244.0, 5, 'K', 4]

N
###Anisotropic magnetic properties of CeAg$_2$Ge$_2$ single crystal|A. Thamizhavel,R. Kulkarni,S. K. Dhar###
(1370967, 1370967)
 A clear anisotropy and an antiferromagnetic transition atT<missing VAR>rm N  4.6 K have been observed in the magnetic properties.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 4.6, 'K', 0],[31.0, 4, 'at', 1],[32.0, 20, 'K', 1],[126.0, 5, 'K', 2]

C
###Anisotropic magnetic properties of CeAg$_2$Ge$_2$ single crystal|A. Thamizhavel,R. Kulkarni,S. K. Dhar###
(1371061, 1371061)
 From thespecific heat measurements and crystalline electric field (CE<missing VAR>F) analysis of themagnetic susceptibility, we have found the level splitting energies as 5 K and130 K.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 4.6, 'K', 2],[63.0, 4, 'at', 1],[62.0, 20, 'K', 1],[32.0, 5, 'K', 0]

F
###Anisotropic magnetic properties of CeAg$_2$Ge$_2$ single crystal|A. Thamizhavel,R. Kulkarni,S. K. Dhar###
(1371063, 1371063)
 From thespecific heat measurements and crystalline electric field (CE<missing VAR>F) analysis of themagnetic susceptibility, we have found the level splitting energies as 5 K and130 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 4.6, 'K', 2],[65.0, 4, 'at', 1],[64.0, 20, 'K', 1],[30.0, 5, 'K', 0]

K
###Anisotropic magnetic properties of CeAg$_2$Ge$_2$ single crystal|A. Thamizhavel,R. Kulkarni,S. K. Dhar###
(1371100, 1371100)
 From thespecific heat measurements and crystalline electric field (CE<missing VAR>F) analysis of themagnetic susceptibility, we have found the level splitting energies as 5 K and130 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 4.6, 'K', 2],[102.0, 4, 'at', 1],[101.0, 20, 'K', 1],[7.0, 5, 'K', 0]

B/Ce
###Anisotropic magnetic properties of CeAg$_2$Ge$_2$ single crystal|A. Thamizhavel,R. Kulkarni,S. K. Dhar###
(1371154, 1371156)
 The magnetization measurements reveal that the a-axis is the easy axisof magnetization and the saturation moment is murm s<missing VAR>  1.6 murmB/Ce, corroborating the previous neutron diffraction measurements on apolycrystalline sample.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[185.0, 4.6, 'K', 3],[156.0, 4, 'at', 2],[155.0, 20, 'K', 2],[61.0, 5, 'K', 1]

Nd0.7Pb0.3MnO3
###Colossal electroresistance in ferromagnetic insulating state of single crystal Nd$_0.7$Pb$_0.3$MnO$_3$|Himanshu Jain,A. K. Raychaudhuri,Nilotpal Ghosh,H. L. Bhat###
(1371207, 1371213)
Colossal electroresistance in ferromagnetic insulating state of single crystal Nd0.7Pb0.3MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 150, 'K', 4],[203.0, 130, 'K', 4],[257.0, 100, '%', 5],[353.0, 25, 'K', 6],[402.0, 20, '%', 7],[417.0, 7, 'T', 7]

C
###Colossal electroresistance in ferromagnetic insulating state of single crystal Nd$_0.7$Pb$_0.3$MnO$_3$|Himanshu Jain,A. K. Raychaudhuri,Nilotpal Ghosh,H. L. Bhat###
(1371221, 1371221)
 Colossal electroresistance (CER) has been observed in the ferromagneticinsulating (FM<missing VAR>I) state of a manganite.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[170.0, 150, 'K', 3],[195.0, 130, 'K', 3],[249.0, 100, '%', 4],[345.0, 25, 'K', 5],[394.0, 20, '%', 6],[409.0, 7, 'T', 6]

F
###Colossal electroresistance in ferromagnetic insulating state of single crystal Nd$_0.7$Pb$_0.3$MnO$_3$|Himanshu Jain,A. K. Raychaudhuri,Nilotpal Ghosh,H. L. Bhat###
(1371242, 1371242)
 Colossal electroresistance (CER) has been observed in the ferromagneticinsulating (FM<missing VAR>I) state of a manganite.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 150, 'K', 3],[174.0, 130, 'K', 3],[228.0, 100, '%', 4],[324.0, 25, 'K', 5],[373.0, 20, '%', 6],[388.0, 7, 'T', 6]

I
###Colossal electroresistance in ferromagnetic insulating state of single crystal Nd$_0.7$Pb$_0.3$MnO$_3$|Himanshu Jain,A. K. Raychaudhuri,Nilotpal Ghosh,H. L. Bhat###
(1371244, 1371244)
 Colossal electroresistance (CER) has been observed in the ferromagneticinsulating (FM<missing VAR>I) state of a manganite.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 150, 'K', 3],[172.0, 130, 'K', 3],[226.0, 100, '%', 4],[322.0, 25, 'K', 5],[371.0, 20, '%', 6],[386.0, 7, 'T', 6]

C
###Colossal electroresistance in ferromagnetic insulating state of single crystal Nd$_0.7$Pb$_0.3$MnO$_3$|Himanshu Jain,A. K. Raychaudhuri,Nilotpal Ghosh,H. L. Bhat###
(1371261, 1371261)
 Notably, the CER in the FM<missing VAR>I state occursin the absence of magnetoresistance (MR).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 150, 'K', 2],[155.0, 130, 'K', 2],[209.0, 100, '%', 3],[305.0, 25, 'K', 4],[354.0, 20, '%', 5],[369.0, 7, 'T', 5]

F
###Colossal electroresistance in ferromagnetic insulating state of single crystal Nd$_0.7$Pb$_0.3$MnO$_3$|Himanshu Jain,A. K. Raychaudhuri,Nilotpal Ghosh,H. L. Bhat###
(1371269, 1371269)
 Notably, the CER in the FM<missing VAR>I state occursin the absence of magnetoresistance (MR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 150, 'K', 2],[147.0, 130, 'K', 2],[201.0, 100, '%', 3],[297.0, 25, 'K', 4],[346.0, 20, '%', 5],[361.0, 7, 'T', 5]

I
###Colossal electroresistance in ferromagnetic insulating state of single crystal Nd$_0.7$Pb$_0.3$MnO$_3$|Himanshu Jain,A. K. Raychaudhuri,Nilotpal Ghosh,H. L. Bhat###
(1371271, 1371271)
 Notably, the CER in the FM<missing VAR>I state occursin the absence of magnetoresistance (MR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 150, 'K', 2],[145.0, 130, 'K', 2],[199.0, 100, '%', 3],[295.0, 25, 'K', 4],[344.0, 20, '%', 5],[359.0, 7, 'T', 5]

Nd0.7Pb0.3MnO3
###Colossal electroresistance in ferromagnetic insulating state of single crystal Nd$_0.7$Pb$_0.3$MnO$_3$|Himanshu Jain,A. K. Raychaudhuri,Nilotpal Ghosh,H. L. Bhat###
(1371348, 1371354)
 Measurements of electroresistance(ER) and current induced resistivity switching have been performed in theferromagnetic insulating state of a single crystal manganite of compositionNd0.7Pb0.3MnO3 (NPM<missing VAR>O30).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 150, 'K', 1],[62.0, 130, 'K', 1],[116.0, 100, '%', 2],[212.0, 25, 'K', 3],[261.0, 20, '%', 4],[276.0, 7, 'T', 4]

NP
###Colossal electroresistance in ferromagnetic insulating state of single crystal Nd$_0.7$Pb$_0.3$MnO$_3$|Himanshu Jain,A. K. Raychaudhuri,Nilotpal Ghosh,H. L. Bhat###
(1371357, 1371358)
 Measurements of electroresistance(ER) and current induced resistivity switching have been performed in theferromagnetic insulating state of a single crystal manganite of compositionNd0.7Pb0.3MnO3 (NPM<missing VAR>O30).
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 150, 'K', 1],[58.0, 130, 'K', 1],[112.0, 100, '%', 2],[208.0, 25, 'K', 3],[257.0, 20, '%', 4],[272.0, 7, 'T', 4]

O30
###Colossal electroresistance in ferromagnetic insulating state of single crystal Nd$_0.7$Pb$_0.3$MnO$_3$|Himanshu Jain,A. K. Raychaudhuri,Nilotpal Ghosh,H. L. Bhat###
(1371360, 1371361)
 Measurements of electroresistance(ER) and current induced resistivity switching have been performed in theferromagnetic insulating state of a single crystal manganite of compositionNd0.7Pb0.3MnO3 (NPM<missing VAR>O30).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 150, 'K', 1],[55.0, 130, 'K', 1],[109.0, 100, '%', 2],[205.0, 25, 'K', 3],[254.0, 20, '%', 4],[269.0, 7, 'T', 4]

Tc
###Colossal electroresistance in ferromagnetic insulating state of single crystal Nd$_0.7$Pb$_0.3$MnO$_3$|Himanshu Jain,A. K. Raychaudhuri,Nilotpal Ghosh,H. L. Bhat###
(1371389, 1371389)
 The sample has a paramagnetic toferromagnetic (Curie) transition temperature, Tc  150 K and the ferromagneticinsulating state is realized for temperatures, T<missing VAR> < 130 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 150, 'K', 0],[27.0, 130, 'K', 0],[81.0, 100, '%', 1],[177.0, 25, 'K', 2],[226.0, 20, '%', 3],[241.0, 7, 'T', 3]

N
###Colossal electroresistance in ferromagnetic insulating state of single crystal Nd$_0.7$Pb$_0.3$MnO$_3$|Himanshu Jain,A. K. Raychaudhuri,Nilotpal Ghosh,H. L. Bhat###
(1371546, 1371546)
 The severity of this nonlinear behavior ofresistivity at high current densities is progressively enhanced with decreasingtemperature, resulting ultimately, in a regime of negative differentialresistivity (NDR, d<missing VAR>rho/dj < 0) for temperatures < 25 K.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 150, 'K', 2],[130.0, 130, 'K', 2],[76.0, 100, '%', 1],[20.0, 25, 'K', 0],[69.0, 20, '%', 1],[84.0, 7, 'T', 1]

H
###Colossal electroresistance in ferromagnetic insulating state of single crystal Nd$_0.7$Pb$_0.3$MnO$_3$|Himanshu Jain,A. K. Raychaudhuri,Nilotpal Ghosh,H. L. Bhat###
(1371628, 1371628)
 Concomitant withthe build-up of the ER however, is a collapse of the MR to a small value (<20%) even in magnetic field, H  7 T.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[237.0, 150, 'K', 3],[212.0, 130, 'K', 3],[158.0, 100, '%', 2],[62.0, 25, 'K', 1],[13.0, 20, '%', 0],[2.0, 7, 'T', 0]

F
###Colossal electroresistance in ferromagnetic insulating state of single crystal Nd$_0.7$Pb$_0.3$MnO$_3$|Himanshu Jain,A. K. Raychaudhuri,Nilotpal Ghosh,H. L. Bhat###
(1371716, 1371716)
 We establish that, the behavior offerromagnetic insulating phase is distinct from the ferromagnetic metallic(FMM) phase as well as the charge ordered insulating (COI) phase, which are thetwo commonly realized ground state phases of manganites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[325.0, 150, 'K', 5],[300.0, 130, 'K', 5],[246.0, 100, '%', 4],[150.0, 25, 'K', 3],[101.0, 20, '%', 2],[86.0, 7, 'T', 2]

(COI)
###Colossal electroresistance in ferromagnetic insulating state of single crystal Nd$_0.7$Pb$_0.3$MnO$_3$|Himanshu Jain,A. K. Raychaudhuri,Nilotpal Ghosh,H. L. Bhat###
(1371737, 1371741)
 We establish that, the behavior offerromagnetic insulating phase is distinct from the ferromagnetic metallic(FMM) phase as well as the charge ordered insulating (COI) phase, which are thetwo commonly realized ground state phases of manganites.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[346.0, 150, 'K', 5],[321.0, 130, 'K', 5],[267.0, 100, '%', 4],[171.0, 25, 'K', 3],[122.0, 20, '%', 2],[107.0, 7, 'T', 2]

(OS)
###Negative Spin Valve effects in manganite/organic based devices|A. Riminucci,I. Bergenti,L. E. Hueso,M. Murgia,C. Taliani,Y. Zhan,F. Casoli,M. P. de Jong,V. Dediu###
(1371848, 1371851)
 Spin polarized injection in tris(8-hydroxyquinoline) aluminum (Alq3)organic semiconductor (OS) was performed using La0.7Sr0.3MnO3 manganite as thebottom electrode and Co as the top electrode.
Featurization successful!
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 210, 'K', 2]

La0.7Sr0.3MnO3
###Negative Spin Valve effects in manganite/organic based devices|A. Riminucci,I. Bergenti,L. E. Hueso,M. Murgia,C. Taliani,Y. Zhan,F. Casoli,M. P. de Jong,V. Dediu###
(1371859, 1371865)
 Spin polarized injection in tris(8-hydroxyquinoline) aluminum (Alq3)organic semiconductor (OS) was performed using La0.7Sr0.3MnO3 manganite as thebottom electrode and Co as the top electrode.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 210, 'K', 2]

Co
###Negative Spin Valve effects in manganite/organic based devices|A. Riminucci,I. Bergenti,L. E. Hueso,M. Murgia,C. Taliani,Y. Zhan,F. Casoli,M. P. de Jong,V. Dediu###
(1371880, 1371880)
 Spin polarized injection in tris(8-hydroxyquinoline) aluminum (Alq3)organic semiconductor (OS) was performed using La0.7Sr0.3MnO3 manganite as thebottom electrode and Co as the top electrode.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 210, 'K', 2]

OS
###Negative Spin Valve effects in manganite/organic based devices|A. Riminucci,I. Bergenti,L. E. Hueso,M. Murgia,C. Taliani,Y. Zhan,F. Casoli,M. P. de Jong,V. Dediu###
(1371930, 1371931)
 While manganite was directlyconnected to the organic semiconductor layer, a thin tunnel barrier was placedbetween the OS and the Co electrode.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 210, 'K', 1]

Co
###Negative Spin Valve effects in manganite/organic based devices|A. Riminucci,I. Bergenti,L. E. Hueso,M. Murgia,C. Taliani,Y. Zhan,F. Casoli,M. P. de Jong,V. Dediu###
(1371937, 1371937)
 While manganite was directlyconnected to the organic semiconductor layer, a thin tunnel barrier was placedbetween the OS and the Co electrode.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 210, 'K', 1]

LiF
###Negative Spin Valve effects in manganite/organic based devices|A. Riminucci,I. Bergenti,L. E. Hueso,M. Murgia,C. Taliani,Y. Zhan,F. Casoli,M. P. de Jong,V. Dediu###
(1371995, 1371996)
 A clear negative spin valve effect - lowresistance for antiparallel electrodes configuration - was observed below 210 Kin various devices using two different tunnel barriers LiF and Al2O3.
Featurization terminated normally.
0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 210, 'K', 0]

Al2O3
###Negative Spin Valve effects in manganite/organic based devices|A. Riminucci,I. Bergenti,L. E. Hueso,M. Murgia,C. Taliani,Y. Zhan,F. Casoli,M. P. de Jong,V. Dediu###
(1372000, 1372003)
 A clear negative spin valve effect - lowresistance for antiparallel electrodes configuration - was observed below 210 Kin various devices using two different tunnel barriers LiF and Al2O3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 210, 'K', 0]

P
###Negative Spin Valve effects in manganite/organic based devices|A. Riminucci,I. Bergenti,L. E. Hueso,M. Murgia,C. Taliani,Y. Zhan,F. Casoli,M. P. de Jong,V. Dediu###
(1372044, 1372044)
 Photoelectron Spectroscopy (PE<missing VAR>S) investigation of theinterface between manganite and Alq3 revealed a strong interface dipole, whichleads to a better matching of the metal Fermi level with Alq3 LUMO (1.1 e<missing VAR>V)rather than with HOM<missing VAR>O level (1.7 e<missing VAR>V).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 210, 'K', 2]

S
###Negative Spin Valve effects in manganite/organic based devices|A. Riminucci,I. Bergenti,L. E. Hueso,M. Murgia,C. Taliani,Y. Zhan,F. Casoli,M. P. de Jong,V. Dediu###
(1372046, 1372046)
 Photoelectron Spectroscopy (PE<missing VAR>S) investigation of theinterface between manganite and Alq3 revealed a strong interface dipole, whichleads to a better matching of the metal Fermi level with Alq3 LUMO (1.1 e<missing VAR>V)rather than with HOM<missing VAR>O level (1.7 e<missing VAR>V).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 210, 'K', 2]

O
###Negative Spin Valve effects in manganite/organic based devices|A. Riminucci,I. Bergenti,L. E. Hueso,M. Murgia,C. Taliani,Y. Zhan,F. Casoli,M. P. de Jong,V. Dediu###
(1372109, 1372109)
 Photoelectron Spectroscopy (PE<missing VAR>S) investigation of theinterface between manganite and Alq3 revealed a strong interface dipole, whichleads to a better matching of the metal Fermi level with Alq3 LUMO (1.1 e<missing VAR>V)rather than with HOM<missing VAR>O level (1.7 e<missing VAR>V).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 210, 'K', 2]

V
###Negative Spin Valve effects in manganite/organic based devices|A. Riminucci,I. Bergenti,L. E. Hueso,M. Murgia,C. Taliani,Y. Zhan,F. Casoli,M. P. de Jong,V. Dediu###
(1372115, 1372115)
 Photoelectron Spectroscopy (PE<missing VAR>S) investigation of theinterface between manganite and Alq3 revealed a strong interface dipole, whichleads to a better matching of the metal Fermi level with Alq3 LUMO (1.1 e<missing VAR>V)rather than with HOM<missing VAR>O level (1.7 e<missing VAR>V).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 210, 'K', 2]

HO
###Negative Spin Valve effects in manganite/organic based devices|A. Riminucci,I. Bergenti,L. E. Hueso,M. Murgia,C. Taliani,Y. Zhan,F. Casoli,M. P. de Jong,V. Dediu###
(1372125, 1372126)
 Photoelectron Spectroscopy (PE<missing VAR>S) investigation of theinterface between manganite and Alq3 revealed a strong interface dipole, whichleads to a better matching of the metal Fermi level with Alq3 LUMO (1.1 e<missing VAR>V)rather than with HOM<missing VAR>O level (1.7 e<missing VAR>V).
Featurization terminated normally.
0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 210, 'K', 2]

O
###Negative Spin Valve effects in manganite/organic based devices|A. Riminucci,I. Bergenti,L. E. Hueso,M. Murgia,C. Taliani,Y. Zhan,F. Casoli,M. P. de Jong,V. Dediu###
(1372128, 1372128)
 Photoelectron Spectroscopy (PE<missing VAR>S) investigation of theinterface between manganite and Alq3 revealed a strong interface dipole, whichleads to a better matching of the metal Fermi level with Alq3 LUMO (1.1 e<missing VAR>V)rather than with HOM<missing VAR>O level (1.7 e<missing VAR>V).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 210, 'K', 2]

V
###Negative Spin Valve effects in manganite/organic based devices|A. Riminucci,I. Bergenti,L. E. Hueso,M. Murgia,C. Taliani,Y. Zhan,F. Casoli,M. P. de Jong,V. Dediu###
(1372136, 1372136)
 Photoelectron Spectroscopy (PE<missing VAR>S) investigation of theinterface between manganite and Alq3 revealed a strong interface dipole, whichleads to a better matching of the metal Fermi level with Alq3 LUMO (1.1 e<missing VAR>V)rather than with HOM<missing VAR>O level (1.7 e<missing VAR>V).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 210, 'K', 2]

O
###Negative Spin Valve effects in manganite/organic based devices|A. Riminucci,I. Bergenti,L. E. Hueso,M. Murgia,C. Taliani,Y. Zhan,F. Casoli,M. P. de Jong,V. Dediu###
(1372284, 1372284)
 This model involves asharp energy selection of the moving charges by the very narrow LUMO level ofthe organic material leading to peculiar resonant effects.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[308.0, 210, 'K', 5]

Gd
###Microstructure, magneto-transport and magnetic properties of Gd-doped magnetron-sputtered amorphous carbon|L. Zeng,E. Helgren,F. Hellman,R. Islam,D. J. Smith,J. W. Ager III###
(1372331, 1372331)
Microstructure, magneto-transport and magnetic properties of Gd-doped magnetron-sputtered amorphous carbon.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(Gd)
###Microstructure, magneto-transport and magnetic properties of Gd-doped magnetron-sputtered amorphous carbon|L. Zeng,E. Helgren,F. Hellman,R. Islam,D. J. Smith,J. W. Ager III###
(1372356, 1372358)
 The magnetic rare earth element gadolinium (Gd) was doped into thin films ofamorphous carbon (hydrogenated textita-CH, or hydrogen-free textita-C)using magnetron co-sputtering.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CH
###Microstructure, magneto-transport and magnetic properties of Gd-doped magnetron-sputtered amorphous carbon|L. Zeng,E. Helgren,F. Hellman,R. Islam,D. J. Smith,J. W. Ager III###
(1372383, 1372384)
 The magnetic rare earth element gadolinium (Gd) was doped into thin films ofamorphous carbon (hydrogenated textita-CH, or hydrogen-free textita-C)using magnetron co-sputtering.
Featurization terminated normally.
0.5,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Microstructure, magneto-transport and magnetic properties of Gd-doped magnetron-sputtered amorphous carbon|L. Zeng,E. Helgren,F. Hellman,R. Islam,D. J. Smith,J. W. Ager III###
(1372396, 1372396)
 The magnetic rare earth element gadolinium (Gd) was doped into thin films ofamorphous carbon (hydrogenated textita-CH, or hydrogen-free textita-C)using magnetron co-sputtering.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Gd
###Microstructure, magneto-transport and magnetic properties of Gd-doped magnetron-sputtered amorphous carbon|L. Zeng,E. Helgren,F. Hellman,R. Islam,D. J. Smith,J. W. Ager III###
(1372411, 1372411)
 The Gd acted as a magnetic as well as anelectrical dopant, resulting in an enormous negative magnetoresistance below atemperature (T).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Gd
###Microstructure, magneto-transport and magnetic properties of Gd-doped magnetron-sputtered amorphous carbon|L. Zeng,E. Helgren,F. Hellman,R. Islam,D. J. Smith,J. W. Ager III###
(1372517, 1372517)
 High-resolution electron microscopy, ion-beam analysis andRaman spectroscopy were used to characterize the influence of Gd doping on thetextita-Gdx<missing VAR>C1-x<missing VAR>(Hy) film morphology, composition, density andbonding.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Gd
###Microstructure, magneto-transport and magnetic properties of Gd-doped magnetron-sputtered amorphous carbon|L. Zeng,E. Helgren,F. Hellman,R. Islam,D. J. Smith,J. W. Ager III###
(1372529, 1372529)
 High-resolution electron microscopy, ion-beam analysis andRaman spectroscopy were used to characterize the influence of Gd doping on thetextita-Gdx<missing VAR>C1-x<missing VAR>(Hy) film morphology, composition, density andbonding.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Microstructure, magneto-transport and magnetic properties of Gd-doped magnetron-sputtered amorphous carbon|L. Zeng,E. Helgren,F. Hellman,R. Islam,D. J. Smith,J. W. Ager III###
(1372536, 1372536)
 High-resolution electron microscopy, ion-beam analysis andRaman spectroscopy were used to characterize the influence of Gd doping on thetextita-Gdx<missing VAR>C1-x<missing VAR>(Hy) film morphology, composition, density andbonding.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Microstructure, magneto-transport and magnetic properties of Gd-doped magnetron-sputtered amorphous carbon|L. Zeng,E. Helgren,F. Hellman,R. Islam,D. J. Smith,J. W. Ager III###
(1372583, 1372583)
As the Gd doping increased, the sp2-bonded carbon atoms evolved fromcarbon chains to 6-member graphitic rings.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Gd
###Microstructure, magneto-transport and magnetic properties of Gd-doped magnetron-sputtered amorphous carbon|L. Zeng,E. Helgren,F. Hellman,R. Islam,D. J. Smith,J. W. Ager III###
(1372587, 1372587)
As the Gd doping increased, the sp2-bonded carbon atoms evolved fromcarbon chains to 6-member graphitic rings.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Microstructure, magneto-transport and magnetic properties of Gd-doped magnetron-sputtered amorphous carbon|L. Zeng,E. Helgren,F. Hellman,R. Islam,D. J. Smith,J. W. Ager III###
(1372629, 1372629)
 Incorporation of H opened up thegraphitic rings and stabilized a sp2-rich carbon-chain random network.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Gd
###Microstructure, magneto-transport and magnetic properties of Gd-doped magnetron-sputtered amorphous carbon|L. Zeng,E. Helgren,F. Hellman,R. Islam,D. J. Smith,J. W. Ager III###
(1372677, 1372677)
 Thetransport properties not only depended on Gd doping, but were also verysensitive to the sp2 ordering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Gd
###Microstructure, magneto-transport and magnetic properties of Gd-doped magnetron-sputtered amorphous carbon|L. Zeng,E. Helgren,F. Hellman,R. Islam,D. J. Smith,J. W. Ager III###
(1372734, 1372734)
 Magnetic properties, such as the spin-glassfreezing temperature and susceptibility, scaled with the Gd concentration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Subgap tunneling via quantum-interference effect: insulators and charge density waves|S. Duhot,R. Mélin###
(1372846, 1372846)
 B 55, 1142 (1997)].
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 55, ',', 0],[119.0, 78, ',', 6],[246.0, 62, ',', 11]

C
###Subgap tunneling via quantum-interference effect: insulators and charge density waves|S. Duhot,R. Mélin###
(1372936, 1372936)
 Quantum interference effects similar tothose occurring in normal tunnel junctions explain magnetoresistanceoscillations of a CD<missing VAR>W pierced by nanoholes [Latyshev et al.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 55, ',', 2],[29.0, 78, ',', 4],[156.0, 62, ',', 9]

W
###Subgap tunneling via quantum-interference effect: insulators and charge density waves|S. Duhot,R. Mélin###
(1372938, 1372938)
 Quantum interference effects similar tothose occurring in normal tunnel junctions explain magnetoresistanceoscillations of a CD<missing VAR>W pierced by nanoholes [Latyshev et al.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 55, ',', 2],[27.0, 78, ',', 4],[154.0, 62, ',', 9]

C
###Subgap tunneling via quantum-interference effect: insulators and charge density waves|S. Duhot,R. Mélin###
(1373068, 1373068)
 The effect is within the same trend asrandom matrix theory for normal metal-CD<missing VAR>W hybrids [Visscher et al.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[220.0, 55, ',', 8],[103.0, 78, ',', 2],[24.0, 62, ',', 3]

W
###Subgap tunneling via quantum-interference effect: insulators and charge density waves|S. Duhot,R. Mélin###
(1373070, 1373070)
 The effect is within the same trend asrandom matrix theory for normal metal-CD<missing VAR>W hybrids [Visscher et al.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[222.0, 55, ',', 8],[105.0, 78, ',', 2],[22.0, 62, ',', 3]

B
###Subgap tunneling via quantum-interference effect: insulators and charge density waves|S. Duhot,R. Mélin###
(1373090, 1373090)
B 62, 6873 (2000)].
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[242.0, 55, ',', 11],[125.0, 78, ',', 5],[2.0, 62, ',', 0]

SC
###Colossal magnetocapacitance and scale-invariant dielectric response in phase-separated manganites|Ryan P. Rairigh,Guneeta Singh-Bhalla,Sefaatin Tongay,Tara Dhakal,Amlan Biswas,Arthur F. Hebard###
(1373210, 1373211)
 Thin films of strongly-correlated electron materials (SCEM) are often grownepitaxially on planar substrates and typically have anisotropic properties thatare usually not captured by edge-mounted four-terminal electrical measurements,which are primarily sensitive to in-plane conduction paths.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SC
###Colossal magnetocapacitance and scale-invariant dielectric response in phase-separated manganites|Ryan P. Rairigh,Guneeta Singh-Bhalla,Sefaatin Tongay,Tara Dhakal,Amlan Biswas,Arthur F. Hebard###
(1373354, 1373355)
 We address this shortcoming and show here anexperimental technique in which the SCEM under study, in our case a 600Angstrom-thick (La1-yPry)0.67Ca0.33MnO3 (L<missing VAR>PCM<missing VAR>O) film, serves as the baseelectrode in a metal-insulator-metal (MIM) trilayer capacitor structure.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La1-y
###Colossal magnetocapacitance and scale-invariant dielectric response in phase-separated manganites|Ryan P. Rairigh,Guneeta Singh-Bhalla,Sefaatin Tongay,Tara Dhakal,Amlan Biswas,Arthur F. Hebard###
(1373380, 1373383)
 We address this shortcoming and show here anexperimental technique in which the SCEM under study, in our case a 600Angstrom-thick (La1-yPry)0.67Ca0.33MnO3 (L<missing VAR>PCM<missing VAR>O) film, serves as the baseelectrode in a metal-insulator-metal (MIM) trilayer capacitor structure.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

Ca0.33MnO3
###Colossal magnetocapacitance and scale-invariant dielectric response in phase-separated manganites|Ryan P. Rairigh,Guneeta Singh-Bhalla,Sefaatin Tongay,Tara Dhakal,Amlan Biswas,Arthur F. Hebard###
(1373387, 1373391)
 We address this shortcoming and show here anexperimental technique in which the SCEM under study, in our case a 600Angstrom-thick (La1-yPry)0.67Ca0.33MnO3 (L<missing VAR>PCM<missing VAR>O) film, serves as the baseelectrode in a metal-insulator-metal (MIM) trilayer capacitor structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6928406466512702,0,0,0,0,0,0,0,0,0,0,0,0.07621247113163973,0,0,0,0,0.23094688221709006,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PC
###Colossal magnetocapacitance and scale-invariant dielectric response in phase-separated manganites|Ryan P. Rairigh,Guneeta Singh-Bhalla,Sefaatin Tongay,Tara Dhakal,Amlan Biswas,Arthur F. Hebard###
(1373395, 1373396)
 We address this shortcoming and show here anexperimental technique in which the SCEM under study, in our case a 600Angstrom-thick (La1-yPry)0.67Ca0.33MnO3 (L<missing VAR>PCM<missing VAR>O) film, serves as the baseelectrode in a metal-insulator-metal (MIM) trilayer capacitor structure.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Colossal magnetocapacitance and scale-invariant dielectric response in phase-separated manganites|Ryan P. Rairigh,Guneeta Singh-Bhalla,Sefaatin Tongay,Tara Dhakal,Amlan Biswas,Arthur F. Hebard###
(1373398, 1373398)
 We address this shortcoming and show here anexperimental technique in which the SCEM under study, in our case a 600Angstrom-thick (La1-yPry)0.67Ca0.33MnO3 (L<missing VAR>PCM<missing VAR>O) film, serves as the baseelectrode in a metal-insulator-metal (MIM) trilayer capacitor structure.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Colossal magnetocapacitance and scale-invariant dielectric response in phase-separated manganites|Ryan P. Rairigh,Guneeta Singh-Bhalla,Sefaatin Tongay,Tara Dhakal,Amlan Biswas,Arthur F. Hebard###
(1373461, 1373461)
 Thisunconventional arrangement allows for simultaneous determination of colossalmagnetoresistance (CMR) associated with dc transport parallel to the filmsubstrate and colossal magnetocapacitance (CM<missing VAR>C) associated with ac transport inthe perpendicular direction.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Colossal magnetocapacitance and scale-invariant dielectric response in phase-separated manganites|Ryan P. Rairigh,Guneeta Singh-Bhalla,Sefaatin Tongay,Tara Dhakal,Amlan Biswas,Arthur F. Hebard###
(1373492, 1373492)
 Thisunconventional arrangement allows for simultaneous determination of colossalmagnetoresistance (CMR) associated with dc transport parallel to the filmsubstrate and colossal magnetocapacitance (CM<missing VAR>C) associated with ac transport inthe perpendicular direction.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Colossal magnetocapacitance and scale-invariant dielectric response in phase-separated manganites|Ryan P. Rairigh,Guneeta Singh-Bhalla,Sefaatin Tongay,Tara Dhakal,Amlan Biswas,Arthur F. Hebard###
(1373494, 1373494)
 Thisunconventional arrangement allows for simultaneous determination of colossalmagnetoresistance (CMR) associated with dc transport parallel to the filmsubstrate and colossal magnetocapacitance (CM<missing VAR>C) associated with ac transport inthe perpendicular direction.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Colossal magnetocapacitance and scale-invariant dielectric response in phase-separated manganites|Ryan P. Rairigh,Guneeta Singh-Bhalla,Sefaatin Tongay,Tara Dhakal,Amlan Biswas,Arthur F. Hebard###
(1373537, 1373537)
 We distinguish two distinct strain-relateddirection-dependent insulator-metal (IM) transitions and use Cole-Cole plots toestablish a heretofore unobserved collapse of the dielectric response onto auniversal scale-invariant power-law dependence over a large range of frequency,temperature and magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Microwave photoconductivity of a 2D electron gas: Mechanisms and their interplay at high radiation power|I. A. Dmitriev,A. D. Mirlin,D. G. Polyakov###
(1373710, 1373710)
 At linear order in microwave power, twonovel mechanisms of the oscillations (quadrupole and photovoltaic) areidentified, in addition to those studied before (displacement andinelastic).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 2, 'D', 2]

In
###Microwave photoconductivity of a 2D electron gas: Mechanisms and their interplay at high radiation power|I. A. Dmitriev,A. D. Mirlin,D. G. Polyakov###
(1373825, 1373825)
 In the diagonal part, the inelastic contributiondominates at moderate microwave power, while at elevated power the othermechanisms become relevant.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[196.0, 2, 'D', 4]

At
###Microwave photoconductivity of a 2D electron gas: Mechanisms and their interplay at high radiation power|I. A. Dmitriev,A. D. Mirlin,D. G. Polyakov###
(1373972, 1373972)
 At ultrahigh power, all effectsrelated to the Landau quantization decay due to a combination of the feedbackand multiphoton effects, restoring the classical Drude conductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[343.0, 2, 'D', 6]

Na
###Magnetic field induced spin-flop transition in Na$_x$CoO$_2$ (0.5$<$x$<$0.55)|T. Wu,D. F. Fang,G. Y. Wang,L. Zhao,G. Wu,X. G. Luo,C. H. Wang,X. H. Chen###
(1374051, 1374051)
Magnetic field induced spin-flop transition in Nax<missing VAR>CoO2 (0.5<x<missing VAR><0.55).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 0.5, '<', 0],[98.0, 25, 'K', 1],[273.0, 25, 'K', 5]

CoO2
###Magnetic field induced spin-flop transition in Na$_x$CoO$_2$ (0.5$<$x$<$0.55)|T. Wu,D. F. Fang,G. Y. Wang,L. Zhao,G. Wu,X. G. Luo,C. H. Wang,X. H. Chen###
(1374053, 1374055)
Magnetic field induced spin-flop transition in Nax<missing VAR>CoO2 (0.5<x<missing VAR><0.55).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 0.5, '<', 0],[94.0, 25, 'K', 1],[269.0, 25, 'K', 5]

(H)
###Magnetic field induced spin-flop transition in Na$_x$CoO$_2$ (0.5$<$x$<$0.55)|T. Wu,D. F. Fang,G. Y. Wang,L. Zhao,G. Wu,X. G. Luo,C. H. Wang,X. H. Chen###
(1374083, 1374085)
 The isothermal magnetoresistance (MR) with magnetic field (H) parallel to andperpendicular to ab plane is systematically studied on the single crystalNa0.52CoO2 with charge ordering at sim 50 K and an in-planeferromagnetism below 25 K.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 0.5, '<', 1],[64.0, 25, 'K', 0],[239.0, 25, 'K', 4]

Na0.52CoO2
###Magnetic field induced spin-flop transition in Na$_x$CoO$_2$ (0.5$<$x$<$0.55)|T. Wu,D. F. Fang,G. Y. Wang,L. Zhao,G. Wu,X. G. Luo,C. H. Wang,X. H. Chen###
(1374117, 1374121)
 The isothermal magnetoresistance (MR) with magnetic field (H) parallel to andperpendicular to ab plane is systematically studied on the single crystalNa0.52CoO2 with charge ordering at sim 50 K and an in-planeferromagnetism below 25 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5681818181818182,0,0,0.14772727272727273,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2840909090909091,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 0.5, '<', 1],[28.0, 25, 'K', 0],[203.0, 25, 'K', 4]

K
###Magnetic field induced spin-flop transition in Na$_x$CoO$_2$ (0.5$<$x$<$0.55)|T. Wu,D. F. Fang,G. Y. Wang,L. Zhao,G. Wu,X. G. Luo,C. H. Wang,X. H. Chen###
(1374135, 1374135)
 The isothermal magnetoresistance (MR) with magnetic field (H) parallel to andperpendicular to ab plane is systematically studied on the single crystalNa0.52CoO2 with charge ordering at sim 50 K and an in-planeferromagnetism below 25 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 0.5, '<', 1],[14.0, 25, 'K', 0],[189.0, 25, 'K', 4]

H
###Magnetic field induced spin-flop transition in Na$_x$CoO$_2$ (0.5$<$x$<$0.55)|T. Wu,D. F. Fang,G. Y. Wang,L. Zhao,G. Wu,X. G. Luo,C. H. Wang,X. H. Chen###
(1374163, 1374163)
 The isothermal MR behavior with H parallel abplane and H perp ab plane is quite different.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 0.5, '<', 2],[14.0, 25, 'K', 1],[161.0, 25, 'K', 3]

H
###Magnetic field induced spin-flop transition in Na$_x$CoO$_2$ (0.5$<$x$<$0.55)|T. Wu,D. F. Fang,G. Y. Wang,L. Zhao,G. Wu,X. G. Luo,C. H. Wang,X. H. Chen###
(1374174, 1374174)
 The isothermal MR behavior with H parallel abplane and H perp ab plane is quite different.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 0.5, '<', 2],[25.0, 25, 'K', 1],[150.0, 25, 'K', 3]

H
###Magnetic field induced spin-flop transition in Na$_x$CoO$_2$ (0.5$<$x$<$0.55)|T. Wu,D. F. Fang,G. Y. Wang,L. Zhao,G. Wu,X. G. Luo,C. H. Wang,X. H. Chen###
(1374191, 1374191)
 When H parallel ab plane,the MR is always negative and the in-plane ferromagnetic behavior is enhanced.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 0.5, '<', 3],[42.0, 25, 'K', 2],[133.0, 25, 'K', 2]

H
###Magnetic field induced spin-flop transition in Na$_x$CoO$_2$ (0.5$<$x$<$0.55)|T. Wu,D. F. Fang,G. Y. Wang,L. Zhao,G. Wu,X. G. Luo,C. H. Wang,X. H. Chen###
(1374239, 1374239)
While the MR with H perp ab plane changes from negative to positive withdecreasing temperature or increasing H, and the in-plane ferromagnetic behavioris suppressed.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 0.5, '<', 4],[90.0, 25, 'K', 3],[85.0, 25, 'K', 1]

H
###Magnetic field induced spin-flop transition in Na$_x$CoO$_2$ (0.5$<$x$<$0.55)|T. Wu,D. F. Fang,G. Y. Wang,L. Zhao,G. Wu,X. G. Luo,C. H. Wang,X. H. Chen###
(1374268, 1374268)
While the MR with H perp ab plane changes from negative to positive withdecreasing temperature or increasing H, and the in-plane ferromagnetic behavioris suppressed.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[210.0, 0.5, '<', 4],[119.0, 25, 'K', 3],[56.0, 25, 'K', 1]

H
###Magnetic field induced spin-flop transition in Na$_x$CoO$_2$ (0.5$<$x$<$0.55)|T. Wu,D. F. Fang,G. Y. Wang,L. Zhao,G. Wu,X. G. Luo,C. H. Wang,X. H. Chen###
(1374306, 1374306)
 A striking feature is that the MR with H perp ab plane showsa hysteresis behavior below 25 K, which is absent for the case of H parallelab plane.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[248.0, 0.5, '<', 5],[157.0, 25, 'K', 4],[18.0, 25, 'K', 0]

H
###Magnetic field induced spin-flop transition in Na$_x$CoO$_2$ (0.5$<$x$<$0.55)|T. Wu,D. F. Fang,G. Y. Wang,L. Zhao,G. Wu,X. G. Luo,C. H. Wang,X. H. Chen###
(1374341, 1374341)
 A striking feature is that the MR with H perp ab plane showsa hysteresis behavior below 25 K, which is absent for the case of H parallelab plane.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[283.0, 0.5, '<', 5],[192.0, 25, 'K', 4],[17.0, 25, 'K', 0]

Co3.5
###Magnetic field induced spin-flop transition in Na$_x$CoO$_2$ (0.5$<$x$<$0.55)|T. Wu,D. F. Fang,G. Y. Wang,L. Zhao,G. Wu,X. G. Luo,C. H. Wang,X. H. Chen###
(1374380, 1374381)
 These results provide strong evidence for a spin-flop transition ofsmall moments of Co3.5-delta sites induced by H perp ab plane, leadingto a metamagnetic transition for small moments of Co3.5-delta sites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[322.0, 0.5, '<', 6],[231.0, 25, 'K', 5],[56.0, 25, 'K', 1]

H
###Magnetic field induced spin-flop transition in Na$_x$CoO$_2$ (0.5$<$x$<$0.55)|T. Wu,D. F. Fang,G. Y. Wang,L. Zhao,G. Wu,X. G. Luo,C. H. Wang,X. H. Chen###
(1374391, 1374391)
 These results provide strong evidence for a spin-flop transition ofsmall moments of Co3.5-delta sites induced by H perp ab plane, leadingto a metamagnetic transition for small moments of Co3.5-delta sites.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[333.0, 0.5, '<', 6],[242.0, 25, 'K', 5],[67.0, 25, 'K', 1]

Co3.5
###Magnetic field induced spin-flop transition in Na$_x$CoO$_2$ (0.5$<$x$<$0.55)|T. Wu,D. F. Fang,G. Y. Wang,L. Zhao,G. Wu,X. G. Luo,C. H. Wang,X. H. Chen###
(1374419, 1374420)
 These results provide strong evidence for a spin-flop transition ofsmall moments of Co3.5-delta sites induced by H perp ab plane, leadingto a metamagnetic transition for small moments of Co3.5-delta sites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[361.0, 0.5, '<', 6],[270.0, 25, 'K', 5],[95.0, 25, 'K', 1]

Na
###Magnetic field induced spin-flop transition in Na$_x$CoO$_2$ (0.5$<$x$<$0.55)|T. Wu,D. F. Fang,G. Y. Wang,L. Zhao,G. Wu,X. G. Luo,C. H. Wang,X. H. Chen###
(1374445, 1374445)
These complex magnetism suggests an unconventional superconductivity inNax<missing VAR>CoO2 system because the Nax<missing VAR>CoO2 around x<missing VAR>0.5 is considered to bethe parent compound of superconductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[387.0, 0.5, '<', 7],[296.0, 25, 'K', 6],[121.0, 25, 'K', 2]

CoO2
###Magnetic field induced spin-flop transition in Na$_x$CoO$_2$ (0.5$<$x$<$0.55)|T. Wu,D. F. Fang,G. Y. Wang,L. Zhao,G. Wu,X. G. Luo,C. H. Wang,X. H. Chen###
(1374447, 1374449)
These complex magnetism suggests an unconventional superconductivity inNax<missing VAR>CoO2 system because the Nax<missing VAR>CoO2 around x<missing VAR>0.5 is considered to bethe parent compound of superconductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[389.0, 0.5, '<', 7],[298.0, 25, 'K', 6],[123.0, 25, 'K', 2]

Na
###Magnetic field induced spin-flop transition in Na$_x$CoO$_2$ (0.5$<$x$<$0.55)|T. Wu,D. F. Fang,G. Y. Wang,L. Zhao,G. Wu,X. G. Luo,C. H. Wang,X. H. Chen###
(1374457, 1374457)
These complex magnetism suggests an unconventional superconductivity inNax<missing VAR>CoO2 system because the Nax<missing VAR>CoO2 around x<missing VAR>0.5 is considered to bethe parent compound of superconductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[399.0, 0.5, '<', 7],[308.0, 25, 'K', 6],[133.0, 25, 'K', 2]

CoO2
###Magnetic field induced spin-flop transition in Na$_x$CoO$_2$ (0.5$<$x$<$0.55)|T. Wu,D. F. Fang,G. Y. Wang,L. Zhao,G. Wu,X. G. Luo,C. H. Wang,X. H. Chen###
(1374459, 1374461)
These complex magnetism suggests an unconventional superconductivity inNax<missing VAR>CoO2 system because the Nax<missing VAR>CoO2 around x<missing VAR>0.5 is considered to bethe parent compound of superconductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[401.0, 0.5, '<', 7],[310.0, 25, 'K', 6],[135.0, 25, 'K', 2]

Ag2
###Non-saturating magnetoresistance of inhomogeneous conductors: comparison of experiment and simulation|Jingshi Hu,Meera M. Parish,T. F. Rosenbaum###
(1374842, 1374843)
 When compared directly to experiments on Ag2pmdeltaSe andAg2pmdeltaTe, in magnetic fields up to 55 T, the model identifiesconductivity fluctuations due to macroscopic inhomogeneities as the underlyingphysical mechanism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 55, 'T', 0]

Se
###Non-saturating magnetoresistance of inhomogeneous conductors: comparison of experiment and simulation|Jingshi Hu,Meera M. Parish,T. F. Rosenbaum###
(1374846, 1374846)
 When compared directly to experiments on Ag2pmdeltaSe andAg2pmdeltaTe, in magnetic fields up to 55 T, the model identifiesconductivity fluctuations due to macroscopic inhomogeneities as the underlyingphysical mechanism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 55, 'T', 0]

Ag2
###Non-saturating magnetoresistance of inhomogeneous conductors: comparison of experiment and simulation|Jingshi Hu,Meera M. Parish,T. F. Rosenbaum###
(1374851, 1374852)
 When compared directly to experiments on Ag2pmdeltaSe andAg2pmdeltaTe, in magnetic fields up to 55 T, the model identifiesconductivity fluctuations due to macroscopic inhomogeneities as the underlyingphysical mechanism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 55, 'T', 0]

Te
###Non-saturating magnetoresistance of inhomogeneous conductors: comparison of experiment and simulation|Jingshi Hu,Meera M. Parish,T. F. Rosenbaum###
(1374855, 1374855)
 When compared directly to experiments on Ag2pmdeltaSe andAg2pmdeltaTe, in magnetic fields up to 55 T, the model identifiesconductivity fluctuations due to macroscopic inhomogeneities as the underlyingphysical mechanism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 55, 'T', 0]

In
###Magnetization oscillations induced by a spin-polarized current in a point-contact geometry: mode hopping and non-linear damping effects|Dmitri V. Berkov,Natalia L. Gorn###
(1374986, 1374986)
 In this paper we study magnetization excitations induced in a thin extendedfilm by a spin-polarized dc-current injected through a point contact in thecurrent-perpendicular-to-plane (CPP) geometry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(CPP)
###Magnetization oscillations induced by a spin-polarized current in a point-contact geometry: mode hopping and non-linear damping effects|Dmitri V. Berkov,Natalia L. Gorn###
(1375048, 1375052)
 In this paper we study magnetization excitations induced in a thin extendedfilm by a spin-polarized dc-current injected through a point contact in thecurrent-perpendicular-to-plane (CPP) geometry.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Nonequilibrium spin-dependent phenomena in mesoscopic superconductor-normal metal tunnel structures|F. Giazotto,F. Taddei,P. D'Amico,Rosario Fazio,F. Beltram###
(1375576, 1375576)
 As a result, the electric current flowing through thesystem is found to be strongly dependent on the relative angle between exchangefields, giving rise to a huge value of magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Nonequilibrium spin-dependent phenomena in mesoscopic superconductor-normal metal tunnel structures|F. Giazotto,F. Taddei,P. D'Amico,Rosario Fazio,F. Beltram###
(1375688, 1375688)
 In the nonequilibrium limit we parametrize thedistributions with an effective temperature, which turns out to be stronglyspin-dependent, though quite sensitive to inelastic collisions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Bipolar spintronics: From spin injection to spin-controlled logic|Igor Zutic,Jaroslav Fabian,Steven C. Erwin###
(1376006, 1376006)
 In contrast, much less is known about possible applications ofsemiconductor-based spintronics and spin-polarized transport in relatedstructures which could utilize strong intrinsic nonlinearities incurrent-voltage characteristics to implement spin-based logic.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin-Dependent Ringing and Beats in a Quantum Dot System|Fabricio M. Souza###
(1376387, 1376387)
 In theferromagnetic case both parallel and antiparallel alignments are considered.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin-Dependent Ringing and Beats in a Quantum Dot System|Fabricio M. Souza###
(1376441, 1376441)
 In particular, for EZ0 no beats are observed and the spin currentis zero for nonmagnetic leads.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin-Dependent Ringing and Beats in a Quantum Dot System|Fabricio M. Souza###
(1376480, 1376480)
 In the ferromagnetic case a finite spin currentis found for EZ0.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

KCrF3
###KCrF_3: Electronic Structure, Magnetic and Orbital Ordering from First Principles|Gianluca Giovannetti,Serena Margadonna,Jeroen van den Brink###
(1376654, 1376657)
KCrF3 Electronic Structure, Magnetic and Orbital Ordering from First Principles.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 1.72, 'eV', 2],[200.0, 3, 'x', 3],[297.0, 2.48, 'eV', 5],[327.0, 2.1, 'eV', 6]

KCrF3
###KCrF_3: Electronic Structure, Magnetic and Orbital Ordering from First Principles|Gianluca Giovannetti,Serena Margadonna,Jeroen van den Brink###
(1376694, 1376697)
 The electronic, magnetic and orbital structures of KCrF3 are determined inall its recently identified crystallographic phases (cubic, tetragonal, andmonoclinic) with a set of it ab initio LSDA and LSDAU calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 1.72, 'eV', 1],[160.0, 3, 'x', 2],[257.0, 2.48, 'eV', 4],[287.0, 2.1, 'eV', 5]

U
###KCrF_3: Electronic Structure, Magnetic and Orbital Ordering from First Principles|Gianluca Giovannetti,Serena Margadonna,Jeroen van den Brink###
(1376756, 1376756)
 The electronic, magnetic and orbital structures of KCrF3 are determined inall its recently identified crystallographic phases (cubic, tetragonal, andmonoclinic) with a set of it ab initio LSDA and LSDAU calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 1.72, 'eV', 1],[101.0, 3, 'x', 2],[198.0, 2.48, 'eV', 4],[228.0, 2.1, 'eV', 5]

U
###KCrF_3: Electronic Structure, Magnetic and Orbital Ordering from First Principles|Gianluca Giovannetti,Serena Margadonna,Jeroen van den Brink###
(1376799, 1376799)
 Thehigh-temperature undistorted cubic phase is metallic within the LSDA, but atthe LSDAU level it is a Mott insulator with a gap of 1.72 eV.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 1.72, 'eV', 0],[58.0, 3, 'x', 1],[155.0, 2.48, 'eV', 3],[185.0, 2.1, 'eV', 4]

KCrF3
###KCrF_3: Electronic Structure, Magnetic and Orbital Ordering from First Principles|Gianluca Giovannetti,Serena Margadonna,Jeroen van den Brink###
(1376836, 1376839)
 The tetragonaland monoclinic phases of KCrF3 exhibit cooperative Jahn-Teller distortionsconcomitant with staggered 3x2-r<missing VAR>2/3y<missing VAR>2-r<missing VAR>2 orbital order.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 1.72, 'eV', 1],[18.0, 3, 'x', 0],[115.0, 2.48, 'eV', 2],[145.0, 2.1, 'eV', 3]

V
###KCrF_3: Electronic Structure, Magnetic and Orbital Ordering from First Principles|Gianluca Giovannetti,Serena Margadonna,Jeroen van den Brink###
(1376907, 1376907)
 We find that theenergy gain due to the Jahn-Teller distortion is 82/104 meV per chromium ion inthe tetragonal/monoclinic phase, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 1.72, 'eV', 2],[50.0, 3, 'x', 1],[47.0, 2.48, 'eV', 1],[77.0, 2.1, 'eV', 2]

In
###KCrF_3: Electronic Structure, Magnetic and Orbital Ordering from First Principles|Gianluca Giovannetti,Serena Margadonna,Jeroen van den Brink###
(1376957, 1376957)
 In this Mott insulating stateKCrF3 has a substantial conduction bandwidth of 2.1 eV, leading to thepossibility for the kinetic energy of charge carriers in electron- orhole-doped derivatives of KCrF3 to overcome the polaron localization at lowtemperatures, in analogy with the situation encountered in the colossalmagnetoresistive manganites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 1.72, 'eV', 4],[100.0, 3, 'x', 3],[3.0, 2.48, 'eV', 1],[27.0, 2.1, 'eV', 0]

KCrF3
###KCrF_3: Electronic Structure, Magnetic and Orbital Ordering from First Principles|Gianluca Giovannetti,Serena Margadonna,Jeroen van den Brink###
(1376968, 1376971)
 In this Mott insulating stateKCrF3 has a substantial conduction bandwidth of 2.1 eV, leading to thepossibility for the kinetic energy of charge carriers in electron- orhole-doped derivatives of KCrF3 to overcome the polaron localization at lowtemperatures, in analogy with the situation encountered in the colossalmagnetoresistive manganites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 1.72, 'eV', 4],[111.0, 3, 'x', 3],[14.0, 2.48, 'eV', 1],[13.0, 2.1, 'eV', 0]

KCrF3
###KCrF_3: Electronic Structure, Magnetic and Orbital Ordering from First Principles|Gianluca Giovannetti,Serena Margadonna,Jeroen van den Brink###
(1377026, 1377029)
 In this Mott insulating stateKCrF3 has a substantial conduction bandwidth of 2.1 eV, leading to thepossibility for the kinetic energy of charge carriers in electron- orhole-doped derivatives of KCrF3 to overcome the polaron localization at lowtemperatures, in analogy with the situation encountered in the colossalmagnetoresistive manganites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[206.0, 1.72, 'eV', 4],[169.0, 3, 'x', 3],[72.0, 2.48, 'eV', 1],[42.0, 2.1, 'eV', 0]

S
###A model for the study of the Shubnikov-de Haas and the integer quantum Hall effects in a two dimensional electronic system|M. A. Hidalgo R. Cangas###
(1377259, 1377259)
 The common characteristic of all these systems is thepresence of a reservoir of electrons, which, in fact, in the initial stage isthe source of the electrons, providing the two-dimensional electron gas (2DES).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 2, 'DES', 1],[28.0, 3, 'D', 1],[49.0, 2, 'DES', 2],[205.0, 2, 'DES', 4],[226.0, 2, 'DES', 5]

In
###A model for the study of the Shubnikov-de Haas and the integer quantum Hall effects in a two dimensional electronic system|M. A. Hidalgo R. Cangas###
(1377324, 1377324)
 In this paper we present an analytical approach to the integerquantum Hall effect (IQHE) and the Shubnikov-de Haas (SdH) phenomena in the2DES, basing us in fundamental principles and showing the secondary role of thelocalized electron states in both phenomena.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 2, 'DES', 2],[37.0, 3, 'D', 2],[16.0, 2, 'DES', 1],[140.0, 2, 'DES', 1],[161.0, 2, 'DES', 2]

I
###A model for the study of the Shubnikov-de Haas and the integer quantum Hall effects in a two dimensional electronic system|M. A. Hidalgo R. Cangas###
(1377354, 1377354)
 In this paper we present an analytical approach to the integerquantum Hall effect (IQHE) and the Shubnikov-de Haas (SdH) phenomena in the2DES, basing us in fundamental principles and showing the secondary role of thelocalized electron states in both phenomena.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 2, 'DES', 2],[67.0, 3, 'D', 2],[46.0, 2, 'DES', 1],[110.0, 2, 'DES', 1],[131.0, 2, 'DES', 2]

H
###A model for the study of the Shubnikov-de Haas and the integer quantum Hall effects in a two dimensional electronic system|M. A. Hidalgo R. Cangas###
(1377372, 1377372)
 In this paper we present an analytical approach to the integerquantum Hall effect (IQHE) and the Shubnikov-de Haas (SdH) phenomena in the2DES, basing us in fundamental principles and showing the secondary role of thelocalized electron states in both phenomena.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 2, 'DES', 2],[85.0, 3, 'D', 2],[64.0, 2, 'DES', 1],[92.0, 2, 'DES', 1],[113.0, 2, 'DES', 2]

S
###A model for the study of the Shubnikov-de Haas and the integer quantum Hall effects in a two dimensional electronic system|M. A. Hidalgo R. Cangas###
(1377385, 1377385)
 In this paper we present an analytical approach to the integerquantum Hall effect (IQHE) and the Shubnikov-de Haas (SdH) phenomena in the2DES, basing us in fundamental principles and showing the secondary role of thelocalized electron states in both phenomena.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 2, 'DES', 2],[98.0, 3, 'D', 2],[77.0, 2, 'DES', 1],[79.0, 2, 'DES', 1],[100.0, 2, 'DES', 2]

In
###A model for the study of the Shubnikov-de Haas and the integer quantum Hall effects in a two dimensional electronic system|M. A. Hidalgo R. Cangas###
(1377426, 1377426)
 In fact, we show that the IQHE isa consequence of the fluctuations of electrons in the 2DES.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 2, 'DES', 3],[139.0, 3, 'D', 3],[118.0, 2, 'DES', 2],[38.0, 2, 'DES', 0],[59.0, 2, 'DES', 1]

I
###A model for the study of the Shubnikov-de Haas and the integer quantum Hall effects in a two dimensional electronic system|M. A. Hidalgo R. Cangas###
(1377439, 1377439)
 In fact, we show that the IQHE isa consequence of the fluctuations of electrons in the 2DES.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 2, 'DES', 3],[152.0, 3, 'D', 3],[131.0, 2, 'DES', 2],[25.0, 2, 'DES', 0],[46.0, 2, 'DES', 1]

I
###A model for the study of the Shubnikov-de Haas and the integer quantum Hall effects in a two dimensional electronic system|M. A. Hidalgo R. Cangas###
(1377631, 1377631)
 The model proposed reproduces both phenomena,the width of the Hall plateaus (with the precision reached in the experimentalmeasurements, of the order of 10-8-10-9) and the corresponding minima of thediagonal magnetoresistivity, and also the dependence with temperature of theIQHE and SdH.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[355.0, 2, 'DES', 5],[344.0, 3, 'D', 5],[323.0, 2, 'DES', 4],[167.0, 2, 'DES', 2],[146.0, 2, 'DES', 1]

H
###A model for the study of the Shubnikov-de Haas and the integer quantum Hall effects in a two dimensional electronic system|M. A. Hidalgo R. Cangas###
(1377639, 1377639)
 The model proposed reproduces both phenomena,the width of the Hall plateaus (with the precision reached in the experimentalmeasurements, of the order of 10-8-10-9) and the corresponding minima of thediagonal magnetoresistivity, and also the dependence with temperature of theIQHE and SdH.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[363.0, 2, 'DES', 5],[352.0, 3, 'D', 5],[331.0, 2, 'DES', 4],[175.0, 2, 'DES', 2],[154.0, 2, 'DES', 1]

Fe1
###The anomalous Hall Effect and magnetoresistance in the layered ferromagnet Fe_{1/4}TaS_2: the inelastic regime|J. G. Checkelsky,Minhyea Lee,E. Morosan,R. J. Cava,N. P. Ong###
(1377670, 1377671)
The anomalous Hall Effect and magnetoresistance in the layered ferromagnet Fe1/4TaS2 the inelastic regime.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[172.0, 50, 'K', 4],[361.0, 2, 'mechanisms', 9]

TaS2
###The anomalous Hall Effect and magnetoresistance in the layered ferromagnet Fe_{1/4}TaS_2: the inelastic regime|J. G. Checkelsky,Minhyea Lee,E. Morosan,R. J. Cava,N. P. Ong###
(1377674, 1377676)
The anomalous Hall Effect and magnetoresistance in the layered ferromagnet Fe1/4TaS2 the inelastic regime.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 50, 'K', 4],[356.0, 2, 'mechanisms', 9]

Fe1
###The anomalous Hall Effect and magnetoresistance in the layered ferromagnet Fe_{1/4}TaS_2: the inelastic regime|J. G. Checkelsky,Minhyea Lee,E. Morosan,R. J. Cava,N. P. Ong###
(1377701, 1377702)
 The large magnetic anisotropy in the layered ferromagnet Fe1/4TaS2 leadsto very sharp reversals of the magnetization bf M<missing VAR> at the coercive field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 50, 'K', 3],[330.0, 2, 'mechanisms', 8]

TaS2
###The anomalous Hall Effect and magnetoresistance in the layered ferromagnet Fe_{1/4}TaS_2: the inelastic regime|J. G. Checkelsky,Minhyea Lee,E. Morosan,R. J. Cava,N. P. Ong###
(1377705, 1377707)
 The large magnetic anisotropy in the layered ferromagnet Fe1/4TaS2 leadsto very sharp reversals of the magnetization bf M<missing VAR> at the coercive field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 50, 'K', 3],[325.0, 2, 'mechanisms', 8]

H
###The anomalous Hall Effect and magnetoresistance in the layered ferromagnet Fe_{1/4}TaS_2: the inelastic regime|J. G. Checkelsky,Minhyea Lee,E. Morosan,R. J. Cava,N. P. Ong###
(1377764, 1377764)
 Wehave exploited this feature to measure the anomalous Hall effect (AHE),focussing on the AHE<missing VAR> conductivity sigmaAxy in the inelastic regime.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 50, 'K', 2],[268.0, 2, 'mechanisms', 7]

H
###The anomalous Hall Effect and magnetoresistance in the layered ferromagnet Fe_{1/4}TaS_2: the inelastic regime|J. G. Checkelsky,Minhyea Lee,E. Morosan,R. J. Cava,N. P. Ong###
(1377777, 1377777)
 Wehave exploited this feature to measure the anomalous Hall effect (AHE),focussing on the AHE<missing VAR> conductivity sigmaAxy in the inelastic regime.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 50, 'K', 2],[255.0, 2, 'mechanisms', 7]

At
###The anomalous Hall Effect and magnetoresistance in the layered ferromagnet Fe_{1/4}TaS_2: the inelastic regime|J. G. Checkelsky,Minhyea Lee,E. Morosan,R. J. Cava,N. P. Ong###
(1377795, 1377795)
 Atlow temperature T<missing VAR> (5-50 K), sigmaAxy is T<missing VAR>-independent, consistent withthe Berry-phase/Karplus-Luttinger theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 50, 'K', 1],[237.0, 2, 'mechanisms', 6]

K
###The anomalous Hall Effect and magnetoresistance in the layered ferromagnet Fe_{1/4}TaS_2: the inelastic regime|J. G. Checkelsky,Minhyea Lee,E. Morosan,R. J. Cava,N. P. Ong###
(1377809, 1377809)
 Atlow temperature T<missing VAR> (5-50 K), sigmaAxy is T<missing VAR>-independent, consistent withthe Berry-phase/Karplus-Luttinger theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 50, 'K', 1],[223.0, 2, 'mechanisms', 6]

H
###The anomalous Hall Effect and magnetoresistance in the layered ferromagnet Fe_{1/4}TaS_2: the inelastic regime|J. G. Checkelsky,Minhyea Lee,E. Morosan,R. J. Cava,N. P. Ong###
(1377856, 1377856)
 Above 50 K, we extract an inelasticAHE<missing VAR> conductivity sigmainxy that scales as the square of Deltarho(the T<missing VAR> dependent part of the resistivity rho).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 50, 'K', 0],[176.0, 2, 'mechanisms', 5]

H
###The anomalous Hall Effect and magnetoresistance in the layered ferromagnet Fe_{1/4}TaS_2: the inelastic regime|J. G. Checkelsky,Minhyea Lee,E. Morosan,R. J. Cava,N. P. Ong###
(1377928, 1377928)
 The term sigmainxyclarifies the T<missing VAR> dependence and sign-reversal of the AHE<missing VAR> coefficient Rs(T).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 50, 'K', 1],[104.0, 2, 'mechanisms', 4]

La1-xCa
###Relationship between macroscopic physical properties and local distortions of low doping La{1-x}Ca{x}MnO3: an EXAFS study|Y. Jiang,F. Bridges,L. Downward,J. J. Neumeier###
(1378128, 1378132)
Relationship between macroscopic physical properties and local distortions of low doping La1-xCax<missing VAR>MnO3 an EXAFS study.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[157.0, 16, '%', 3],[170.0, 70, '%', 3],[182.0, 0.4, 'T', 3],[353.0, 50, '%', 6],[525.0, 0.2, ',', 9],[530.0, 50, '%', 9]

MnO3
###Relationship between macroscopic physical properties and local distortions of low doping La{1-x}Ca{x}MnO3: an EXAFS study|Y. Jiang,F. Bridges,L. Downward,J. J. Neumeier###
(1378134, 1378136)
Relationship between macroscopic physical properties and local distortions of low doping La1-xCax<missing VAR>MnO3 an EXAFS study.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 16, '%', 3],[166.0, 70, '%', 3],[178.0, 0.4, 'T', 3],[349.0, 50, '%', 6],[521.0, 0.2, ',', 9],[526.0, 50, '%', 9]

FS
###Relationship between macroscopic physical properties and local distortions of low doping La{1-x}Ca{x}MnO3: an EXAFS study|Y. Jiang,F. Bridges,L. Downward,J. J. Neumeier###
(1378143, 1378144)
Relationship between macroscopic physical properties and local distortions of low doping La1-xCax<missing VAR>MnO3 an EXAFS study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 16, '%', 3],[158.0, 70, '%', 3],[170.0, 0.4, 'T', 3],[341.0, 50, '%', 6],[513.0, 0.2, ',', 9],[518.0, 50, '%', 9]

FS
###Relationship between macroscopic physical properties and local distortions of low doping La{1-x}Ca{x}MnO3: an EXAFS study|Y. Jiang,F. Bridges,L. Downward,J. J. Neumeier###
(1378158, 1378159)
 A temperature-dependent EXAFS investigation of La1-xCax<missing VAR>MnO3 is presentedfor the concentration range that spans the ferromagnetic-insulator (FM<missing VAR>I) toferromagnetic-metal (FMM) transition region, x<missing VAR>  0.16-0.22.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 16, '%', 2],[143.0, 70, '%', 2],[155.0, 0.4, 'T', 2],[326.0, 50, '%', 5],[498.0, 0.2, ',', 8],[503.0, 50, '%', 8]

La1-xCa
###Relationship between macroscopic physical properties and local distortions of low doping La{1-x}Ca{x}MnO3: an EXAFS study|Y. Jiang,F. Bridges,L. Downward,J. J. Neumeier###
(1378165, 1378169)
 A temperature-dependent EXAFS investigation of La1-xCax<missing VAR>MnO3 is presentedfor the concentration range that spans the ferromagnetic-insulator (FM<missing VAR>I) toferromagnetic-metal (FMM) transition region, x<missing VAR>  0.16-0.22.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[120.0, 16, '%', 2],[133.0, 70, '%', 2],[145.0, 0.4, 'T', 2],[316.0, 50, '%', 5],[488.0, 0.2, ',', 8],[493.0, 50, '%', 8]

MnO3
###Relationship between macroscopic physical properties and local distortions of low doping La{1-x}Ca{x}MnO3: an EXAFS study|Y. Jiang,F. Bridges,L. Downward,J. J. Neumeier###
(1378171, 1378173)
 A temperature-dependent EXAFS investigation of La1-xCax<missing VAR>MnO3 is presentedfor the concentration range that spans the ferromagnetic-insulator (FM<missing VAR>I) toferromagnetic-metal (FMM) transition region, x<missing VAR>  0.16-0.22.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 16, '%', 2],[129.0, 70, '%', 2],[141.0, 0.4, 'T', 2],[312.0, 50, '%', 5],[484.0, 0.2, ',', 8],[489.0, 50, '%', 8]

F
###Relationship between macroscopic physical properties and local distortions of low doping La{1-x}Ca{x}MnO3: an EXAFS study|Y. Jiang,F. Bridges,L. Downward,J. J. Neumeier###
(1378199, 1378199)
 A temperature-dependent EXAFS investigation of La1-xCax<missing VAR>MnO3 is presentedfor the concentration range that spans the ferromagnetic-insulator (FM<missing VAR>I) toferromagnetic-metal (FMM) transition region, x<missing VAR>  0.16-0.22.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 16, '%', 2],[103.0, 70, '%', 2],[115.0, 0.4, 'T', 2],[286.0, 50, '%', 5],[458.0, 0.2, ',', 8],[463.0, 50, '%', 8]

I
###Relationship between macroscopic physical properties and local distortions of low doping La{1-x}Ca{x}MnO3: an EXAFS study|Y. Jiang,F. Bridges,L. Downward,J. J. Neumeier###
(1378201, 1378201)
 A temperature-dependent EXAFS investigation of La1-xCax<missing VAR>MnO3 is presentedfor the concentration range that spans the ferromagnetic-insulator (FM<missing VAR>I) toferromagnetic-metal (FMM) transition region, x<missing VAR>  0.16-0.22.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 16, '%', 2],[101.0, 70, '%', 2],[113.0, 0.4, 'T', 2],[284.0, 50, '%', 5],[456.0, 0.2, ',', 8],[461.0, 50, '%', 8]

F
###Relationship between macroscopic physical properties and local distortions of low doping La{1-x}Ca{x}MnO3: an EXAFS study|Y. Jiang,F. Bridges,L. Downward,J. J. Neumeier###
(1378212, 1378212)
 A temperature-dependent EXAFS investigation of La1-xCax<missing VAR>MnO3 is presentedfor the concentration range that spans the ferromagnetic-insulator (FM<missing VAR>I) toferromagnetic-metal (FMM) transition region, x<missing VAR>  0.16-0.22.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 16, '%', 2],[90.0, 70, '%', 2],[102.0, 0.4, 'T', 2],[273.0, 50, '%', 5],[445.0, 0.2, ',', 8],[450.0, 50, '%', 8]

Ca
###Relationship between macroscopic physical properties and local distortions of low doping La{1-x}Ca{x}MnO3: an EXAFS study|Y. Jiang,F. Bridges,L. Downward,J. J. Neumeier###
(1378293, 1378293)
All samples are ferromagnetic although the saturation magnetization for the 16%Ca sample is only  70% of the expected value at 0.4T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 16, '%', 0],[9.0, 70, '%', 0],[21.0, 0.4, 'T', 0],[192.0, 50, '%', 3],[364.0, 0.2, ',', 6],[369.0, 50, '%', 6]

F
###Relationship between macroscopic physical properties and local distortions of low doping La{1-x}Ca{x}MnO3: an EXAFS study|Y. Jiang,F. Bridges,L. Downward,J. J. Neumeier###
(1378325, 1378325)
 We find that the FM<missing VAR>Isamples have similar correlations between changes in the local Mn-O distortionsand the magnetization as observed previously for the colossal magnetoresistance(CMR) samples (0.2 < x<missing VAR> < 0.5) - except that the FM<missing VAR>I samples never become fullymagnetized.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 16, '%', 1],[23.0, 70, '%', 1],[11.0, 0.4, 'T', 1],[160.0, 50, '%', 2],[332.0, 0.2, ',', 5],[337.0, 50, '%', 5]

I
###Relationship between macroscopic physical properties and local distortions of low doping La{1-x}Ca{x}MnO3: an EXAFS study|Y. Jiang,F. Bridges,L. Downward,J. J. Neumeier###
(1378327, 1378327)
 We find that the FM<missing VAR>Isamples have similar correlations between changes in the local Mn-O distortionsand the magnetization as observed previously for the colossal magnetoresistance(CMR) samples (0.2 < x<missing VAR> < 0.5) - except that the FM<missing VAR>I samples never become fullymagnetized.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 16, '%', 1],[25.0, 70, '%', 1],[13.0, 0.4, 'T', 1],[158.0, 50, '%', 2],[330.0, 0.2, ',', 5],[335.0, 50, '%', 5]

Mn
###Relationship between macroscopic physical properties and local distortions of low doping La{1-x}Ca{x}MnO3: an EXAFS study|Y. Jiang,F. Bridges,L. Downward,J. J. Neumeier###
(1378348, 1378348)
 We find that the FM<missing VAR>Isamples have similar correlations between changes in the local Mn-O distortionsand the magnetization as observed previously for the colossal magnetoresistance(CMR) samples (0.2 < x<missing VAR> < 0.5) - except that the FM<missing VAR>I samples never become fullymagnetized.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 16, '%', 1],[46.0, 70, '%', 1],[34.0, 0.4, 'T', 1],[137.0, 50, '%', 2],[309.0, 0.2, ',', 5],[314.0, 50, '%', 5]

O
###Relationship between macroscopic physical properties and local distortions of low doping La{1-x}Ca{x}MnO3: an EXAFS study|Y. Jiang,F. Bridges,L. Downward,J. J. Neumeier###
(1378350, 1378350)
 We find that the FM<missing VAR>Isamples have similar correlations between changes in the local Mn-O distortionsand the magnetization as observed previously for the colossal magnetoresistance(CMR) samples (0.2 < x<missing VAR> < 0.5) - except that the FM<missing VAR>I samples never become fullymagnetized.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 16, '%', 1],[48.0, 70, '%', 1],[36.0, 0.4, 'T', 1],[135.0, 50, '%', 2],[307.0, 0.2, ',', 5],[312.0, 50, '%', 5]

C
###Relationship between macroscopic physical properties and local distortions of low doping La{1-x}Ca{x}MnO3: an EXAFS study|Y. Jiang,F. Bridges,L. Downward,J. J. Neumeier###
(1378377, 1378377)
 We find that the FM<missing VAR>Isamples have similar correlations between changes in the local Mn-O distortionsand the magnetization as observed previously for the colossal magnetoresistance(CMR) samples (0.2 < x<missing VAR> < 0.5) - except that the FM<missing VAR>I samples never become fullymagnetized.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 16, '%', 1],[75.0, 70, '%', 1],[63.0, 0.4, 'T', 1],[108.0, 50, '%', 2],[280.0, 0.2, ',', 5],[285.0, 50, '%', 5]

F
###Relationship between macroscopic physical properties and local distortions of low doping La{1-x}Ca{x}MnO3: an EXAFS study|Y. Jiang,F. Bridges,L. Downward,J. J. Neumeier###
(1378404, 1378404)
 We find that the FM<missing VAR>Isamples have similar correlations between changes in the local Mn-O distortionsand the magnetization as observed previously for the colossal magnetoresistance(CMR) samples (0.2 < x<missing VAR> < 0.5) - except that the FM<missing VAR>I samples never become fullymagnetized.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 16, '%', 1],[102.0, 70, '%', 1],[90.0, 0.4, 'T', 1],[81.0, 50, '%', 2],[253.0, 0.2, ',', 5],[258.0, 50, '%', 5]

I
###Relationship between macroscopic physical properties and local distortions of low doping La{1-x}Ca{x}MnO3: an EXAFS study|Y. Jiang,F. Bridges,L. Downward,J. J. Neumeier###
(1378406, 1378406)
 We find that the FM<missing VAR>Isamples have similar correlations between changes in the local Mn-O distortionsand the magnetization as observed previously for the colossal magnetoresistance(CMR) samples (0.2 < x<missing VAR> < 0.5) - except that the FM<missing VAR>I samples never become fullymagnetized.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 16, '%', 1],[104.0, 70, '%', 1],[92.0, 0.4, 'T', 1],[79.0, 50, '%', 2],[251.0, 0.2, ',', 5],[256.0, 50, '%', 5]

Mn
###Relationship between macroscopic physical properties and local distortions of low doping La{1-x}Ca{x}MnO3: an EXAFS study|Y. Jiang,F. Bridges,L. Downward,J. J. Neumeier###
(1378492, 1378492)
 The initial distortions removed as the insulating sample becomesmagnetized are small and provides direct evidence that roughly 50% of the Mnsites have a small distortion/site and are magnetized first.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[203.0, 16, '%', 3],[190.0, 70, '%', 3],[178.0, 0.4, 'T', 3],[7.0, 50, '%', 0],[165.0, 0.2, ',', 3],[170.0, 50, '%', 3]

Mn
###Relationship between macroscopic physical properties and local distortions of low doping La{1-x}Ca{x}MnO3: an EXAFS study|Y. Jiang,F. Bridges,L. Downward,J. J. Neumeier###
(1378523, 1378523)
 The largeremaining Mn-O distortions at low T<missing VAR> are attributed to a small fraction ofJahn-Teller-distorted Mn sites that are either antiferromagnetically ordered orunmagnetized.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[234.0, 16, '%', 4],[221.0, 70, '%', 4],[209.0, 0.4, 'T', 4],[38.0, 50, '%', 1],[134.0, 0.2, ',', 2],[139.0, 50, '%', 2]

O
###Relationship between macroscopic physical properties and local distortions of low doping La{1-x}Ca{x}MnO3: an EXAFS study|Y. Jiang,F. Bridges,L. Downward,J. J. Neumeier###
(1378525, 1378525)
 The largeremaining Mn-O distortions at low T<missing VAR> are attributed to a small fraction ofJahn-Teller-distorted Mn sites that are either antiferromagnetically ordered orunmagnetized.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[236.0, 16, '%', 4],[223.0, 70, '%', 4],[211.0, 0.4, 'T', 4],[40.0, 50, '%', 1],[132.0, 0.2, ',', 2],[137.0, 50, '%', 2]

Mn
###Relationship between macroscopic physical properties and local distortions of low doping La{1-x}Ca{x}MnO3: an EXAFS study|Y. Jiang,F. Bridges,L. Downward,J. J. Neumeier###
(1378556, 1378556)
 The largeremaining Mn-O distortions at low T<missing VAR> are attributed to a small fraction ofJahn-Teller-distorted Mn sites that are either antiferromagnetically ordered orunmagnetized.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[267.0, 16, '%', 4],[254.0, 70, '%', 4],[242.0, 0.4, 'T', 4],[71.0, 50, '%', 1],[101.0, 0.2, ',', 2],[106.0, 50, '%', 2]

C
###Relationship between macroscopic physical properties and local distortions of low doping La{1-x}Ca{x}MnO3: an EXAFS study|Y. Jiang,F. Bridges,L. Downward,J. J. Neumeier###
(1378601, 1378601)
 Thus the insulating samples are very similar to the behavior ofthe CMR samples up to the point at which the M<missing VAR>/I transition occurs for the CMRmaterials.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[312.0, 16, '%', 5],[299.0, 70, '%', 5],[287.0, 0.4, 'T', 5],[116.0, 50, '%', 2],[56.0, 0.2, ',', 1],[61.0, 50, '%', 1]

I
###Relationship between macroscopic physical properties and local distortions of low doping La{1-x}Ca{x}MnO3: an EXAFS study|Y. Jiang,F. Bridges,L. Downward,J. J. Neumeier###
(1378623, 1378623)
 Thus the insulating samples are very similar to the behavior ofthe CMR samples up to the point at which the M<missing VAR>/I transition occurs for the CMRmaterials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[334.0, 16, '%', 5],[321.0, 70, '%', 5],[309.0, 0.4, 'T', 5],[138.0, 50, '%', 2],[34.0, 0.2, ',', 1],[39.0, 50, '%', 1]

C
###Relationship between macroscopic physical properties and local distortions of low doping La{1-x}Ca{x}MnO3: an EXAFS study|Y. Jiang,F. Bridges,L. Downward,J. J. Neumeier###
(1378633, 1378633)
 Thus the insulating samples are very similar to the behavior ofthe CMR samples up to the point at which the M<missing VAR>/I transition occurs for the CMRmaterials.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[344.0, 16, '%', 5],[331.0, 70, '%', 5],[319.0, 0.4, 'T', 5],[148.0, 50, '%', 2],[24.0, 0.2, ',', 1],[29.0, 50, '%', 1]

Mn
###Relationship between macroscopic physical properties and local distortions of low doping La{1-x}Ca{x}MnO3: an EXAFS study|Y. Jiang,F. Bridges,L. Downward,J. J. Neumeier###
(1378695, 1378695)
 The lack of metallic conductivity for x<missing VAR> < 0.2, when 50% or more ofthe sample is magnetic, implies that there must be preferred magnetized Mnsites and that such sites do not percolate at these concentrations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[406.0, 16, '%', 6],[393.0, 70, '%', 6],[381.0, 0.4, 'T', 6],[210.0, 50, '%', 3],[38.0, 0.2, ',', 0],[33.0, 50, '%', 0]

Ni50Mn35In15
###Local atomic arrangement and martensitic transformation in Ni$_{50}$Mn$_{35}$In$_{15}$: An EXAFS Study|P. A. Bhobe,K. R. Priolkar,P. R. Sarode###
(1378743, 1378748)
Local atomic arrangement and martensitic transformation in Ni50Mn35In15 An EXAFS Study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.35,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FS
###Local atomic arrangement and martensitic transformation in Ni$_{50}$Mn$_{35}$In$_{15}$: An EXAFS Study|P. A. Bhobe,K. R. Priolkar,P. R. Sarode###
(1378755, 1378756)
Local atomic arrangement and martensitic transformation in Ni50Mn35In15 An EXAFS Study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni50Mn35In15
###Local atomic arrangement and martensitic transformation in Ni$_{50}$Mn$_{35}$In$_{15}$: An EXAFS Study|P. A. Bhobe,K. R. Priolkar,P. R. Sarode###
(1378923, 1378928)
 Ni50Mn35In15 is one such ferromagneticshape memory alloy that displays exotic properties like large magnetoresistanceat moderate field values.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.35,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Local atomic arrangement and martensitic transformation in Ni$_{50}$Mn$_{35}$In$_{15}$: An EXAFS Study|P. A. Bhobe,K. R. Priolkar,P. R. Sarode###
(1378969, 1378969)
 In this work, we present the extended x<missing VAR>-rayabsorption fine-structure measurements (EXAFS) on the bulkNi50Mn35In15 which reveal the local structural change thatoccurs upon phase transformation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Local atomic arrangement and martensitic transformation in Ni$_{50}$Mn$_{35}$In$_{15}$: An EXAFS Study|P. A. Bhobe,K. R. Priolkar,P. R. Sarode###
(1379002, 1379002)
 In this work, we present the extended x<missing VAR>-rayabsorption fine-structure measurements (EXAFS) on the bulkNi50Mn35In15 which reveal the local structural change thatoccurs upon phase transformation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni50Mn35In15
###Local atomic arrangement and martensitic transformation in Ni$_{50}$Mn$_{35}$In$_{15}$: An EXAFS Study|P. A. Bhobe,K. R. Priolkar,P. R. Sarode###
(1379012, 1379017)
 In this work, we present the extended x<missing VAR>-rayabsorption fine-structure measurements (EXAFS) on the bulkNi50Mn35In15 which reveal the local structural change thatoccurs upon phase transformation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.35,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Local atomic arrangement and martensitic transformation in Ni$_{50}$Mn$_{35}$In$_{15}$: An EXAFS Study|P. A. Bhobe,K. R. Priolkar,P. R. Sarode###
(1379095, 1379095)
 The change in the bond lengths betweendifferent atomic species helps in understanding the type of hybridization whichis an important factor in driving such Ni-Mn based systems towards martensitictransformation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Local atomic arrangement and martensitic transformation in Ni$_{50}$Mn$_{35}$In$_{15}$: An EXAFS Study|P. A. Bhobe,K. R. Priolkar,P. R. Sarode###
(1379097, 1379097)
 The change in the bond lengths betweendifferent atomic species helps in understanding the type of hybridization whichis an important factor in driving such Ni-Mn based systems towards martensitictransformation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Non-gapped Fermi surfaces, quasiparticles and the anomalous temperature dependence of the near-$E_F$ electronic states in the CMR oxide La$_{2-2x}$Sr$_{1+2x}$Mn$_2$O$_7$ with $x=0.36$|S. de Jong,Y. Huang,I. Santoso,F. Massee,R. Follath,O. Schwarzkopf,L. Patthey,M. Shi,M. S. Golden###
(1379147, 1379147)
Non-gapped Fermi surfaces, quasiparticles and the anomalous temperature dependence of the near-E<missing VAR>F electronic states in the CMR oxide La2-2x<missing VAR>Sr12x<missing VAR>Mn2O7 with x<missing VAR>0.36.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Non-gapped Fermi surfaces, quasiparticles and the anomalous temperature dependence of the near-$E_F$ electronic states in the CMR oxide La$_{2-2x}$Sr$_{1+2x}$Mn$_2$O$_7$ with $x=0.36$|S. de Jong,Y. Huang,I. Santoso,F. Massee,R. Follath,O. Schwarzkopf,L. Patthey,M. Shi,M. S. Golden###
(1379157, 1379157)
Non-gapped Fermi surfaces, quasiparticles and the anomalous temperature dependence of the near-E<missing VAR>F electronic states in the CMR oxide La2-2x<missing VAR>Sr12x<missing VAR>Mn2O7 with x<missing VAR>0.36.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La2
###Non-gapped Fermi surfaces, quasiparticles and the anomalous temperature dependence of the near-$E_F$ electronic states in the CMR oxide La$_{2-2x}$Sr$_{1+2x}$Mn$_2$O$_7$ with $x=0.36$|S. de Jong,Y. Huang,I. Santoso,F. Massee,R. Follath,O. Schwarzkopf,L. Patthey,M. Shi,M. S. Golden###
(1379163, 1379164)
Non-gapped Fermi surfaces, quasiparticles and the anomalous temperature dependence of the near-E<missing VAR>F electronic states in the CMR oxide La2-2x<missing VAR>Sr12x<missing VAR>Mn2O7 with x<missing VAR>0.36.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr12
###Non-gapped Fermi surfaces, quasiparticles and the anomalous temperature dependence of the near-$E_F$ electronic states in the CMR oxide La$_{2-2x}$Sr$_{1+2x}$Mn$_2$O$_7$ with $x=0.36$|S. de Jong,Y. Huang,I. Santoso,F. Massee,R. Follath,O. Schwarzkopf,L. Patthey,M. Shi,M. S. Golden###
(1379168, 1379170)
Non-gapped Fermi surfaces, quasiparticles and the anomalous temperature dependence of the near-E<missing VAR>F electronic states in the CMR oxide La2-2x<missing VAR>Sr12x<missing VAR>Mn2O7 with x<missing VAR>0.36.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn2O7
###Non-gapped Fermi surfaces, quasiparticles and the anomalous temperature dependence of the near-$E_F$ electronic states in the CMR oxide La$_{2-2x}$Sr$_{1+2x}$Mn$_2$O$_7$ with $x=0.36$|S. de Jong,Y. Huang,I. Santoso,F. Massee,R. Follath,O. Schwarzkopf,L. Patthey,M. Shi,M. S. Golden###
(1379172, 1379175)
Non-gapped Fermi surfaces, quasiparticles and the anomalous temperature dependence of the near-E<missing VAR>F electronic states in the CMR oxide La2-2x<missing VAR>Sr12x<missing VAR>Mn2O7 with x<missing VAR>0.36.
Featurization terminated normally.
0,0,0,0,0,0,0,0.7777777777777778,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Non-gapped Fermi surfaces, quasiparticles and the anomalous temperature dependence of the near-$E_F$ electronic states in the CMR oxide La$_{2-2x}$Sr$_{1+2x}$Mn$_2$O$_7$ with $x=0.36$|S. de Jong,Y. Huang,I. Santoso,F. Massee,R. Follath,O. Schwarzkopf,L. Patthey,M. Shi,M. S. Golden###
(1379198, 1379198)
 After years of research into colossal magnetoresistant (CMR) manganites usingbulk techniques, there has been a recent upsurge in experiments directlyprobing the electronic states at or near the surface of the bilayer CMRmaterials La2-2x<missing VAR>Sr12x<missing VAR>Mn2O7 using angle-resolved photoemissionor scanning probe microscopy.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Non-gapped Fermi surfaces, quasiparticles and the anomalous temperature dependence of the near-$E_F$ electronic states in the CMR oxide La$_{2-2x}$Sr$_{1+2x}$Mn$_2$O$_7$ with $x=0.36$|S. de Jong,Y. Huang,I. Santoso,F. Massee,R. Follath,O. Schwarzkopf,L. Patthey,M. Shi,M. S. Golden###
(1379256, 1379256)
 After years of research into colossal magnetoresistant (CMR) manganites usingbulk techniques, there has been a recent upsurge in experiments directlyprobing the electronic states at or near the surface of the bilayer CMRmaterials La2-2x<missing VAR>Sr12x<missing VAR>Mn2O7 using angle-resolved photoemissionor scanning probe microscopy.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La2
###Non-gapped Fermi surfaces, quasiparticles and the anomalous temperature dependence of the near-$E_F$ electronic states in the CMR oxide La$_{2-2x}$Sr$_{1+2x}$Mn$_2$O$_7$ with $x=0.36$|S. de Jong,Y. Huang,I. Santoso,F. Massee,R. Follath,O. Schwarzkopf,L. Patthey,M. Shi,M. S. Golden###
(1379263, 1379264)
 After years of research into colossal magnetoresistant (CMR) manganites usingbulk techniques, there has been a recent upsurge in experiments directlyprobing the electronic states at or near the surface of the bilayer CMRmaterials La2-2x<missing VAR>Sr12x<missing VAR>Mn2O7 using angle-resolved photoemissionor scanning probe microscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr12
###Non-gapped Fermi surfaces, quasiparticles and the anomalous temperature dependence of the near-$E_F$ electronic states in the CMR oxide La$_{2-2x}$Sr$_{1+2x}$Mn$_2$O$_7$ with $x=0.36$|S. de Jong,Y. Huang,I. Santoso,F. Massee,R. Follath,O. Schwarzkopf,L. Patthey,M. Shi,M. S. Golden###
(1379268, 1379270)
 After years of research into colossal magnetoresistant (CMR) manganites usingbulk techniques, there has been a recent upsurge in experiments directlyprobing the electronic states at or near the surface of the bilayer CMRmaterials La2-2x<missing VAR>Sr12x<missing VAR>Mn2O7 using angle-resolved photoemissionor scanning probe microscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn2O7
###Non-gapped Fermi surfaces, quasiparticles and the anomalous temperature dependence of the near-$E_F$ electronic states in the CMR oxide La$_{2-2x}$Sr$_{1+2x}$Mn$_2$O$_7$ with $x=0.36$|S. de Jong,Y. Huang,I. Santoso,F. Massee,R. Follath,O. Schwarzkopf,L. Patthey,M. Shi,M. S. Golden###
(1379272, 1379275)
 After years of research into colossal magnetoresistant (CMR) manganites usingbulk techniques, there has been a recent upsurge in experiments directlyprobing the electronic states at or near the surface of the bilayer CMRmaterials La2-2x<missing VAR>Sr12x<missing VAR>Mn2O7 using angle-resolved photoemissionor scanning probe microscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0.7777777777777778,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Non-gapped Fermi surfaces, quasiparticles and the anomalous temperature dependence of the near-$E_F$ electronic states in the CMR oxide La$_{2-2x}$Sr$_{1+2x}$Mn$_2$O$_7$ with $x=0.36$|S. de Jong,Y. Huang,I. Santoso,F. Massee,R. Follath,O. Schwarzkopf,L. Patthey,M. Shi,M. S. Golden###
(1379394, 1379394)
 The first important result is that there is no sign of a pseudogap inthe charge channel of this material for temperatures below the Curietemperature T<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Non-gapped Fermi surfaces, quasiparticles and the anomalous temperature dependence of the near-$E_F$ electronic states in the CMR oxide La$_{2-2x}$Sr$_{1+2x}$Mn$_2$O$_7$ with $x=0.36$|S. de Jong,Y. Huang,I. Santoso,F. Massee,R. Follath,O. Schwarzkopf,L. Patthey,M. Shi,M. S. Golden###
(1379491, 1379491)
 The temperature dependent changes in theFermi surface spectra both at the zone face and zone diagonal regions ink<missing VAR>-space indicate that the coherent quasiparticle weight disappears fortemperatures significantly above T<missing VAR>C, and that the k<missing VAR>-dependence of theT<missing VAR>-induced changes in the spectra invalidate an interpretation of these data interms of the superposition of a universal metallic spectrum and an insulatingspectrum whose relative weight changes with temperature.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Non-gapped Fermi surfaces, quasiparticles and the anomalous temperature dependence of the near-$E_F$ electronic states in the CMR oxide La$_{2-2x}$Sr$_{1+2x}$Mn$_2$O$_7$ with $x=0.36$|S. de Jong,Y. Huang,I. Santoso,F. Massee,R. Follath,O. Schwarzkopf,L. Patthey,M. Shi,M. S. Golden###
(1379576, 1379576)
 In this sense, ourdata are not compatible with a phase separation scenario.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnO3
###Optical phase diagram of perovskite-type colossal magnetoresistance manganites with near-half doping|I. Kezsmarki,Y. Tomioka,S. Miyasaka,L. Demko,Y. Okimoto,Y. Tokura###
(1379684, 1379686)
 We present a systematic optical study for a bandwidth-controlled series ofnearly half doped colossal magnetoresistive manganitesRE0.55AE<missing VAR>0.45MnO3 (RE and AE<missing VAR> being rare earth and alkaline earthions, respectively) under the presence of quenched disorder over a broadtemperature region T<missing VAR>10-800 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Optical phase diagram of perovskite-type colossal magnetoresistance manganites with near-half doping|I. Kezsmarki,Y. Tomioka,S. Miyasaka,L. Demko,Y. Okimoto,Y. Tokura###
(1379744, 1379744)
 We present a systematic optical study for a bandwidth-controlled series ofnearly half doped colossal magnetoresistive manganitesRE0.55AE<missing VAR>0.45MnO3 (RE and AE<missing VAR> being rare earth and alkaline earthions, respectively) under the presence of quenched disorder over a broadtemperature region T<missing VAR>10-800 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Optical phase diagram of perovskite-type colossal magnetoresistance manganites with near-half doping|I. Kezsmarki,Y. Tomioka,S. Miyasaka,L. Demko,Y. Okimoto,Y. Tokura###
(1379961, 1379961)
 This pseudo-gapstate with local correlations is robust against thermal fluctuations at leastup to T<missing VAR>800 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Interplay of structure and spin-orbit strength in magnetism of metal-benzene sandwiches: from single molecules to infinite wires|Y. Mokrousov,N. Atodiresei,G. Bihlmayer,S. Heinze,S. Blügel###
(1380261, 1380261)
 Based on first-principles density functional theory calculations we exploreelectronic and magnetic properties of experimentally producible sandwiches andinfinite wires made of repeating benzene molecules and transition-metal atomsof V, Nb, and Ta.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nb
###Interplay of structure and spin-orbit strength in magnetism of metal-benzene sandwiches: from single molecules to infinite wires|Y. Mokrousov,N. Atodiresei,G. Bihlmayer,S. Heinze,S. Blügel###
(1380264, 1380264)
 Based on first-principles density functional theory calculations we exploreelectronic and magnetic properties of experimentally producible sandwiches andinfinite wires made of repeating benzene molecules and transition-metal atomsof V, Nb, and Ta.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ta
###Interplay of structure and spin-orbit strength in magnetism of metal-benzene sandwiches: from single molecules to infinite wires|Y. Mokrousov,N. Atodiresei,G. Bihlmayer,S. Heinze,S. Blügel###
(1380269, 1380269)
 Based on first-principles density functional theory calculations we exploreelectronic and magnetic properties of experimentally producible sandwiches andinfinite wires made of repeating benzene molecules and transition-metal atomsof V, Nb, and Ta.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V3
###Interplay of structure and spin-orbit strength in magnetism of metal-benzene sandwiches: from single molecules to infinite wires|Y. Mokrousov,N. Atodiresei,G. Bihlmayer,S. Heinze,S. Blügel###
(1380359, 1380360)
 We findthat all the considered systems have sizable magnetic moments and ferromagneticspin-ordering, with the single exception of the V3-Bz4 molecule.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Interplay of structure and spin-orbit strength in magnetism of metal-benzene sandwiches: from single molecules to infinite wires|Y. Mokrousov,N. Atodiresei,G. Bihlmayer,S. Heinze,S. Blügel###
(1380504, 1380504)
 While for the V-basedcompounds the values of the MAE are only of the order of 0.05-0.5 meV per metalatom, increasing the spin-orbit strength by substituting V with heavier Nb andTa allows to achieve an increase in anisotropy values by one to two orders ofmagnitude.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Interplay of structure and spin-orbit strength in magnetism of metal-benzene sandwiches: from single molecules to infinite wires|Y. Mokrousov,N. Atodiresei,G. Bihlmayer,S. Heinze,S. Blügel###
(1380540, 1380540)
 While for the V-basedcompounds the values of the MAE are only of the order of 0.05-0.5 meV per metalatom, increasing the spin-orbit strength by substituting V with heavier Nb andTa allows to achieve an increase in anisotropy values by one to two orders ofmagnitude.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Interplay of structure and spin-orbit strength in magnetism of metal-benzene sandwiches: from single molecules to infinite wires|Y. Mokrousov,N. Atodiresei,G. Bihlmayer,S. Heinze,S. Blügel###
(1380564, 1380564)
 While for the V-basedcompounds the values of the MAE are only of the order of 0.05-0.5 meV per metalatom, increasing the spin-orbit strength by substituting V with heavier Nb andTa allows to achieve an increase in anisotropy values by one to two orders ofmagnitude.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nb
###Interplay of structure and spin-orbit strength in magnetism of metal-benzene sandwiches: from single molecules to infinite wires|Y. Mokrousov,N. Atodiresei,G. Bihlmayer,S. Heinze,S. Blügel###
(1380570, 1380570)
 While for the V-basedcompounds the values of the MAE are only of the order of 0.05-0.5 meV per metalatom, increasing the spin-orbit strength by substituting V with heavier Nb andTa allows to achieve an increase in anisotropy values by one to two orders ofmagnitude.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ta
###Interplay of structure and spin-orbit strength in magnetism of metal-benzene sandwiches: from single molecules to infinite wires|Y. Mokrousov,N. Atodiresei,G. Bihlmayer,S. Heinze,S. Blügel###
(1380575, 1380575)
 While for the V-basedcompounds the values of the MAE are only of the order of 0.05-0.5 meV per metalatom, increasing the spin-orbit strength by substituting V with heavier Nb andTa allows to achieve an increase in anisotropy values by one to two orders ofmagnitude.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nb
###Interplay of structure and spin-orbit strength in magnetism of metal-benzene sandwiches: from single molecules to infinite wires|Y. Mokrousov,N. Atodiresei,G. Bihlmayer,S. Heinze,S. Blügel###
(1380662, 1380662)
 For a Nb-benzene infinite wire theoccurrence of ballistic anisotropic magnetoresistance is demonstrated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Y
###Searching for hexagonal analogues of the half-metallic half-Heusler XYZ compounds|Frederick Casper,Claudia Felser,Ram Seshadri,C. Peter Sebastian,Rainer Poettgen###
(1380756, 1380756)
 The XYZ half-Heusler crystal structure can conveniently be described as atetrahedral zinc blende YZ<missing VAR> structure which is stuffed by a slightly ionic X<missing VAR>species.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[248.0, 22, 'electron', 3],[278.0, 18, 'electron', 4]

LiAlSi
###Searching for hexagonal analogues of the half-metallic half-Heusler XYZ compounds|Frederick Casper,Claudia Felser,Ram Seshadri,C. Peter Sebastian,Rainer Poettgen###
(1380816, 1380818)
 This description is well suited to understand the electronic structureof semiconducting 8-electron compounds such as LiAlSi (formulatedLi[AlSi]-) or semiconducting 18-electron compounds such as TiCoSb(formulated Ti4[CoSb]4-).
Featurization terminated normally.
0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, 22, 'electron', 2],[216.0, 18, 'electron', 3]

Li[AlSi]
###Searching for hexagonal analogues of the half-metallic half-Heusler XYZ compounds|Frederick Casper,Claudia Felser,Ram Seshadri,C. Peter Sebastian,Rainer Poettgen###
(1380824, 1380828)
 This description is well suited to understand the electronic structureof semiconducting 8-electron compounds such as LiAlSi (formulatedLi[AlSi]-) or semiconducting 18-electron compounds such as TiCoSb(formulated Ti4[CoSb]4-).
EXCEPTION 1: Square brackets detected! Chemical formula was modified to: Li(AlSi)
0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[176.0, 22, 'electron', 2],[206.0, 18, 'electron', 3]

TiCoSb
###Searching for hexagonal analogues of the half-metallic half-Heusler XYZ compounds|Frederick Casper,Claudia Felser,Ram Seshadri,C. Peter Sebastian,Rainer Poettgen###
(1380846, 1380848)
 This description is well suited to understand the electronic structureof semiconducting 8-electron compounds such as LiAlSi (formulatedLi[AlSi]-) or semiconducting 18-electron compounds such as TiCoSb(formulated Ti4[CoSb]4-).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 22, 'electron', 2],[186.0, 18, 'electron', 3]

Ti4[CoSb]4
###Searching for hexagonal analogues of the half-metallic half-Heusler XYZ compounds|Frederick Casper,Claudia Felser,Ram Seshadri,C. Peter Sebastian,Rainer Poettgen###
(1380854, 1380860)
 This description is well suited to understand the electronic structureof semiconducting 8-electron compounds such as LiAlSi (formulatedLi[AlSi]-) or semiconducting 18-electron compounds such as TiCoSb(formulated Ti4[CoSb]4-).
EXCEPTION 1: Square brackets detected! Chemical formula was modified to: Ti4(CoSb)4
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 22, 'electron', 2],[174.0, 18, 'electron', 3]

In
###Anomalous Transport Phenomena in Fermi Liquids with Strong Magnetic Fluctuations|Hiroshi Kontani###
(1381297, 1381297)
 In many strongly correlated electron systems, remarkable violation of therelaxation time approximation (RTA) is observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###Anomalous Transport Phenomena in Fermi Liquids with Strong Magnetic Fluctuations|Hiroshi Kontani###
(1381351, 1381351)
 The most famous example wouldbe high-Tc superconductors (HT<missing VAR>SCs), and similar anomalous transport phenomenahave been observed in metals near their antiferromagnetic (AF) quantum criticalpoint (Q<missing VAR>CP).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Anomalous Transport Phenomena in Fermi Liquids with Strong Magnetic Fluctuations|Hiroshi Kontani###
(1381356, 1381356)
 The most famous example wouldbe high-Tc superconductors (HT<missing VAR>SCs), and similar anomalous transport phenomenahave been observed in metals near their antiferromagnetic (AF) quantum criticalpoint (Q<missing VAR>CP).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cs
###Anomalous Transport Phenomena in Fermi Liquids with Strong Magnetic Fluctuations|Hiroshi Kontani###
(1381359, 1381359)
 The most famous example wouldbe high-Tc superconductors (HT<missing VAR>SCs), and similar anomalous transport phenomenahave been observed in metals near their antiferromagnetic (AF) quantum criticalpoint (Q<missing VAR>CP).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Anomalous Transport Phenomena in Fermi Liquids with Strong Magnetic Fluctuations|Hiroshi Kontani###
(1381392, 1381392)
 The most famous example wouldbe high-Tc superconductors (HT<missing VAR>SCs), and similar anomalous transport phenomenahave been observed in metals near their antiferromagnetic (AF) quantum criticalpoint (Q<missing VAR>CP).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Anomalous Transport Phenomena in Fermi Liquids with Strong Magnetic Fluctuations|Hiroshi Kontani###
(1381405, 1381405)
 The most famous example wouldbe high-Tc superconductors (HT<missing VAR>SCs), and similar anomalous transport phenomenahave been observed in metals near their antiferromagnetic (AF) quantum criticalpoint (Q<missing VAR>CP).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(CVC)
###Anomalous Transport Phenomena in Fermi Liquids with Strong Magnetic Fluctuations|Hiroshi Kontani###
(1381465, 1381469)
 Here, we develop a transport theory involving resistivity and Hallcoefficient on the basis of the microscopic Fermi liquid theory, by consideringthe current vertex correction (CVC).
Featurization successful!
0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Anomalous Transport Phenomena in Fermi Liquids with Strong Magnetic Fluctuations|Hiroshi Kontani###
(1381472, 1381472)
 In nearly AF Fermi liquids, the CVCaccounts for the significant enhancements in the Hall coefficient,magnetoresistance, thermoelectric power, and Nernst coefficient in nearly AFmetals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Anomalous Transport Phenomena in Fermi Liquids with Strong Magnetic Fluctuations|Hiroshi Kontani###
(1381477, 1381477)
 In nearly AF Fermi liquids, the CVCaccounts for the significant enhancements in the Hall coefficient,magnetoresistance, thermoelectric power, and Nernst coefficient in nearly AFmetals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CVC
###Anomalous Transport Phenomena in Fermi Liquids with Strong Magnetic Fluctuations|Hiroshi Kontani###
(1381486, 1381488)
 In nearly AF Fermi liquids, the CVCaccounts for the significant enhancements in the Hall coefficient,magnetoresistance, thermoelectric power, and Nernst coefficient in nearly AFmetals.
Featurization terminated normally.
0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Anomalous Transport Phenomena in Fermi Liquids with Strong Magnetic Fluctuations|Hiroshi Kontani###
(1381530, 1381530)
 In nearly AF Fermi liquids, the CVCaccounts for the significant enhancements in the Hall coefficient,magnetoresistance, thermoelectric power, and Nernst coefficient in nearly AFmetals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Anomalous Transport Phenomena in Fermi Liquids with Strong Magnetic Fluctuations|Hiroshi Kontani###
(1381560, 1381560)
 According to the numerical study, aspects of anomalous transportphenomena in HT<missing VAR>SC are explained in a unified way by considering the CVC,without introducing any fitting parameters; this strongly supports the ideathat HT<missing VAR>SCs are Fermi liquids with strong AF fluctuations.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SC
###Anomalous Transport Phenomena in Fermi Liquids with Strong Magnetic Fluctuations|Hiroshi Kontani###
(1381562, 1381563)
 According to the numerical study, aspects of anomalous transportphenomena in HT<missing VAR>SC are explained in a unified way by considering the CVC,without introducing any fitting parameters; this strongly supports the ideathat HT<missing VAR>SCs are Fermi liquids with strong AF fluctuations.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CVC
###Anomalous Transport Phenomena in Fermi Liquids with Strong Magnetic Fluctuations|Hiroshi Kontani###
(1381583, 1381585)
 According to the numerical study, aspects of anomalous transportphenomena in HT<missing VAR>SC are explained in a unified way by considering the CVC,without introducing any fitting parameters; this strongly supports the ideathat HT<missing VAR>SCs are Fermi liquids with strong AF fluctuations.
Featurization terminated normally.
0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Anomalous Transport Phenomena in Fermi Liquids with Strong Magnetic Fluctuations|Hiroshi Kontani###
(1381613, 1381613)
 According to the numerical study, aspects of anomalous transportphenomena in HT<missing VAR>SC are explained in a unified way by considering the CVC,without introducing any fitting parameters; this strongly supports the ideathat HT<missing VAR>SCs are Fermi liquids with strong AF fluctuations.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SCs
###Anomalous Transport Phenomena in Fermi Liquids with Strong Magnetic Fluctuations|Hiroshi Kontani###
(1381615, 1381616)
 According to the numerical study, aspects of anomalous transportphenomena in HT<missing VAR>SC are explained in a unified way by considering the CVC,without introducing any fitting parameters; this strongly supports the ideathat HT<missing VAR>SCs are Fermi liquids with strong AF fluctuations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Anomalous Transport Phenomena in Fermi Liquids with Strong Magnetic Fluctuations|Hiroshi Kontani###
(1381629, 1381629)
 According to the numerical study, aspects of anomalous transportphenomena in HT<missing VAR>SC are explained in a unified way by considering the CVC,without introducing any fitting parameters; this strongly supports the ideathat HT<missing VAR>SCs are Fermi liquids with strong AF fluctuations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Anomalous Transport Phenomena in Fermi Liquids with Strong Magnetic Fluctuations|Hiroshi Kontani###
(1381634, 1381634)
 In addition, thestriking omega-dependence of the AC Hall coefficient and the remarkableeffects of impurities on the transport coefficients in HT<missing VAR>SCs appear to fitnaturally into the present theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Anomalous Transport Phenomena in Fermi Liquids with Strong Magnetic Fluctuations|Hiroshi Kontani###
(1381653, 1381653)
 In addition, thestriking omega-dependence of the AC Hall coefficient and the remarkableeffects of impurities on the transport coefficients in HT<missing VAR>SCs appear to fitnaturally into the present theory.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Anomalous Transport Phenomena in Fermi Liquids with Strong Magnetic Fluctuations|Hiroshi Kontani###
(1381682, 1381682)
 In addition, thestriking omega-dependence of the AC Hall coefficient and the remarkableeffects of impurities on the transport coefficients in HT<missing VAR>SCs appear to fitnaturally into the present theory.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SCs
###Anomalous Transport Phenomena in Fermi Liquids with Strong Magnetic Fluctuations|Hiroshi Kontani###
(1381684, 1381685)
 In addition, thestriking omega-dependence of the AC Hall coefficient and the remarkableeffects of impurities on the transport coefficients in HT<missing VAR>SCs appear to fitnaturally into the present theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CeCoIn5
###Anomalous Transport Phenomena in Fermi Liquids with Strong Magnetic Fluctuations|Hiroshi Kontani###
(1381730, 1381733)
 The present theory also explains verysimilar anomalous transport phenomena occurring in CeCoIn5 and CeRhIn5, whichis a heavy-fermion system near the AF Q<missing VAR>CP, and in the organic superconductorkappa-(BEDT-TTF).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7142857142857143,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CeRhIn5
###Anomalous Transport Phenomena in Fermi Liquids with Strong Magnetic Fluctuations|Hiroshi Kontani###
(1381737, 1381740)
 The present theory also explains verysimilar anomalous transport phenomena occurring in CeCoIn5 and CeRhIn5, whichis a heavy-fermion system near the AF Q<missing VAR>CP, and in the organic superconductorkappa-(BEDT-TTF).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0.7142857142857143,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Anomalous Transport Phenomena in Fermi Liquids with Strong Magnetic Fluctuations|Hiroshi Kontani###
(1381761, 1381761)
 The present theory also explains verysimilar anomalous transport phenomena occurring in CeCoIn5 and CeRhIn5, whichis a heavy-fermion system near the AF Q<missing VAR>CP, and in the organic superconductorkappa-(BEDT-TTF).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CP
###Anomalous Transport Phenomena in Fermi Liquids with Strong Magnetic Fluctuations|Hiroshi Kontani###
(1381764, 1381765)
 The present theory also explains verysimilar anomalous transport phenomena occurring in CeCoIn5 and CeRhIn5, whichis a heavy-fermion system near the AF Q<missing VAR>CP, and in the organic superconductorkappa-(BEDT-TTF).
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Anomalous Transport Phenomena in Fermi Liquids with Strong Magnetic Fluctuations|Hiroshi Kontani###
(1381782, 1381782)
 The present theory also explains verysimilar anomalous transport phenomena occurring in CeCoIn5 and CeRhIn5, whichis a heavy-fermion system near the AF Q<missing VAR>CP, and in the organic superconductorkappa-(BEDT-TTF).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Anomalous Transport Phenomena in Fermi Liquids with Strong Magnetic Fluctuations|Hiroshi Kontani###
(1381789, 1381789)
 The present theory also explains verysimilar anomalous transport phenomena occurring in CeCoIn5 and CeRhIn5, whichis a heavy-fermion system near the AF Q<missing VAR>CP, and in the organic superconductorkappa-(BEDT-TTF).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Quantum effects in atomically perfect specular spin valve structures|J. M. Teixeira,J. Ventura,Yu. G. Pogorelov,J. B. Sousa###
(1382134, 1382134)
 The mainMR effect in the considered limit is due to the transformation of coherentquantum states, induced by the relative rotation of magnetization in the FM<missing VAR>layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 100, '%', 2]

Mn
###Transport in the metallic regime of Mn doped III-V Semiconductors|Louis-Francois Arsenault,B. Movaghar,P. Desjardins,A. Yelon###
(1382222, 1382222)
Transport in the metallic regime of Mn doped III-V Semiconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

III
###Transport in the metallic regime of Mn doped III-V Semiconductors|Louis-Francois Arsenault,B. Movaghar,P. Desjardins,A. Yelon###
(1382226, 1382228)
Transport in the metallic regime of Mn doped III-V Semiconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Transport in the metallic regime of Mn doped III-V Semiconductors|Louis-Francois Arsenault,B. Movaghar,P. Desjardins,A. Yelon###
(1382230, 1382230)
Transport in the metallic regime of Mn doped III-V Semiconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Transport in the metallic regime of Mn doped III-V Semiconductors|Louis-Francois Arsenault,B. Movaghar,P. Desjardins,A. Yelon###
(1382243, 1382243)
 The standard model of Mn doping in GaAs is subjected to a coherent potentialapproximation (CPA) treatment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Transport in the metallic regime of Mn doped III-V Semiconductors|Louis-Francois Arsenault,B. Movaghar,P. Desjardins,A. Yelon###
(1382249, 1382250)
 The standard model of Mn doping in GaAs is subjected to a coherent potentialapproximation (CPA) treatment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CP
###Transport in the metallic regime of Mn doped III-V Semiconductors|Louis-Francois Arsenault,B. Movaghar,P. Desjardins,A. Yelon###
(1382268, 1382269)
 The standard model of Mn doping in GaAs is subjected to a coherent potentialapproximation (CPA) treatment.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NH
###Transport in the metallic regime of Mn doped III-V Semiconductors|Louis-Francois Arsenault,B. Movaghar,P. Desjardins,A. Yelon###
(1382303, 1382304)
 Both normal (NHE) and anomalous contributions(AHE) to the Hall effect are examined.
Featurization terminated normally.
0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Transport in the metallic regime of Mn doped III-V Semiconductors|Louis-Francois Arsenault,B. Movaghar,P. Desjardins,A. Yelon###
(1382317, 1382317)
 Both normal (NHE) and anomalous contributions(AHE) to the Hall effect are examined.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CP
###Transport in the metallic regime of Mn doped III-V Semiconductors|Louis-Francois Arsenault,B. Movaghar,P. Desjardins,A. Yelon###
(1382366, 1382367)
 The CPA bandstructure evolves into a spinsplit band caused by the p-d exchange scattering with Mn dopants.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Transport in the metallic regime of Mn doped III-V Semiconductors|Louis-Francois Arsenault,B. Movaghar,P. Desjardins,A. Yelon###
(1382401, 1382401)
 The CPA bandstructure evolves into a spinsplit band caused by the p-d exchange scattering with Mn dopants.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CP
###Transport in the metallic regime of Mn doped III-V Semiconductors|Louis-Francois Arsenault,B. Movaghar,P. Desjardins,A. Yelon###
(1382472, 1382473)
The temperature (T) dependence of the resistance is due to spin disorderscattering (increasing with T), CPA bandstructure renormalization and chargedimpurity scattering (decreasing with T).
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CP
###Transport in the metallic regime of Mn doped III-V Semiconductors|Louis-Francois Arsenault,B. Movaghar,P. Desjardins,A. Yelon###
(1382614, 1382615)
This does indeed appear to be case, bearing in mind that the hopping limitneeds to be treated separately, as it cannot be described within the band CPA.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Bandstructure meets many-body theory: The LDA+DMFT method|K. Held,O. K. Andersen,M. Feldbacher,A. Yamasaki,Y. -F. Yang###
(1382644, 1382644)
Bandstructure meets many-body theory The LDADMFT<missing VAR> method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Bandstructure meets many-body theory: The LDA+DMFT method|K. Held,O. K. Andersen,M. Feldbacher,A. Yamasaki,Y. -F. Yang###
(1382874, 1382874)
  Encouraged by the success of dynamical mean field theory (DMFT) in dealingwith model Hamiltonians for strongly correlated electron systems, physicistsfrom the bandstructure and many-body communities have joined forces and havedeveloped a combined LDADMFT<missing VAR> method for treating materials with stronglycorrelated electrons ab initio.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Bandstructure meets many-body theory: The LDA+DMFT method|K. Held,O. K. Andersen,M. Feldbacher,A. Yamasaki,Y. -F. Yang###
(1382939, 1382939)
  Encouraged by the success of dynamical mean field theory (DMFT) in dealingwith model Hamiltonians for strongly correlated electron systems, physicistsfrom the bandstructure and many-body communities have joined forces and havedeveloped a combined LDADMFT<missing VAR> method for treating materials with stronglycorrelated electrons ab initio.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Bandstructure meets many-body theory: The LDA+DMFT method|K. Held,O. K. Andersen,M. Feldbacher,A. Yamasaki,Y. -F. Yang###
(1382964, 1382964)
 As a function of increasing Coulombcorrelations, this new approach yields a weakly correlated metal, a stronglycorrelated metal, or a Mott insulator.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Bandstructure meets many-body theory: The LDA+DMFT method|K. Held,O. K. Andersen,M. Feldbacher,A. Yamasaki,Y. -F. Yang###
(1383019, 1383019)
  In this paper, we introduce the LDADMFT<missing VAR> by means of an example, LaMnO3 .
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Bandstructure meets many-body theory: The LDA+DMFT method|K. Held,O. K. Andersen,M. Feldbacher,A. Yamasaki,Y. -F. Yang###
(1383037, 1383037)
  In this paper, we introduce the LDADMFT<missing VAR> by means of an example, LaMnO3 .
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaMnO3
###Bandstructure meets many-body theory: The LDA+DMFT method|K. Held,O. K. Andersen,M. Feldbacher,A. Yamasaki,Y. -F. Yang###
(1383051, 1383054)
  In this paper, we introduce the LDADMFT<missing VAR> by means of an example, LaMnO3 .
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Bandstructure meets many-body theory: The LDA+DMFT method|K. Held,O. K. Andersen,M. Feldbacher,A. Yamasaki,Y. -F. Yang###
(1383110, 1383110)
 We also discuss advantages and disadvantages of theLDADMFT<missing VAR> approach.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni1.75Mn1.25Ga
###Magnetoresistance behavior of a ferromagnetic shape memory alloy: Ni_1.75Mn_1.25Ga|S. Banik,R. Rawat,P. K. Mukhopadhyay,B. L. Ahuja,Aparna Chakrabarti,P. L. Paulose,S. Singh,A. K. Singh,D. Pandey,S. R. Barman###
(1383140, 1383144)
Magnetoresistance behavior of a ferromagnetic shape memory alloy Ni1.75Mn1.25Ga.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3125,0,0,0.4375,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 300, 'and', 2],[63.0, 120, 'K', 2],[89.0, 120, 'K', 3],[204.0, 120, 'K', 5]

Ni1.75Mn1.25Ga
###Magnetoresistance behavior of a ferromagnetic shape memory alloy: Ni_1.75Mn_1.25Ga|S. Banik,R. Rawat,P. K. Mukhopadhyay,B. L. Ahuja,Aparna Chakrabarti,P. L. Paulose,S. Singh,A. K. Singh,D. Pandey,S. R. Barman###
(1383190, 1383194)
 A negative-positive-negative switching behavior of magnetoresistance (MR)with temperature is observed in a ferromagnetic shape memory alloyNi1.75Mn1.25Ga.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3125,0,0,0.4375,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 300, 'and', 1],[13.0, 120, 'K', 1],[39.0, 120, 'K', 2],[154.0, 120, 'K', 4]

In
###Magnetoresistance behavior of a ferromagnetic shape memory alloy: Ni_1.75Mn_1.25Ga|S. Banik,R. Rawat,P. K. Mukhopadhyay,B. L. Ahuja,Aparna Chakrabarti,P. L. Paulose,S. Singh,A. K. Singh,D. Pandey,S. R. Barman###
(1383197, 1383197)
 In the austenitic phase between 300 and 120 K, MR is negativedue to s-d scattering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 300, 'and', 0],[10.0, 120, 'K', 0],[36.0, 120, 'K', 1],[151.0, 120, 'K', 3]

Mn
###Magnetoresistance behavior of a ferromagnetic shape memory alloy: Ni_1.75Mn_1.25Ga|S. Banik,R. Rawat,P. K. Mukhopadhyay,B. L. Ahuja,Aparna Chakrabarti,P. L. Paulose,S. Singh,A. K. Singh,D. Pandey,S. R. Barman###
(1383387, 1383387)
 Theoryshows that a ferrimagnetic state with anti-ferromagnetic alignment between thelocal magnetic moments of the Mn atoms is the energetically favoured groundstate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 300, 'and', 4],[180.0, 120, 'K', 4],[154.0, 120, 'K', 3],[39.0, 120, 'K', 1]

In
###Magnetoresistance behavior of a ferromagnetic shape memory alloy: Ni_1.75Mn_1.25Ga|S. Banik,R. Rawat,P. K. Mukhopadhyay,B. L. Ahuja,Aparna Chakrabarti,P. L. Paulose,S. Singh,A. K. Singh,D. Pandey,S. R. Barman###
(1383405, 1383405)
 In the martensitic phase, there are two competing factors that governthe MR behavior a dominant negative trend up to the saturation field due tothe decrease of electron scattering at twin and domain boundaries; and a weakerpositive trend due to the ferrimagnetic nature of the magnetic state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[199.0, 300, 'and', 5],[198.0, 120, 'K', 5],[172.0, 120, 'K', 4],[57.0, 120, 'K', 2]

Ga
###Enhanced annealing, high Curie temperature and low-voltage gating in (Ga,Mn)As: A surface oxide control study|K. Olejnik,M. H. S. Owen,V. Novak,J. Masek,A. C. Irvine,J. Wunderlich,T. Jungwirth###
(1383586, 1383586)
Enhanced annealing, high Curie temperature and low-voltage gating in (Ga,Mn)As A surface oxide control study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, -10, '%', 2],[199.0, 180, 'K', 4],[205.0, 8, '%', 4]

Mn
###Enhanced annealing, high Curie temperature and low-voltage gating in (Ga,Mn)As: A surface oxide control study|K. Olejnik,M. H. S. Owen,V. Novak,J. Masek,A. C. Irvine,J. Wunderlich,T. Jungwirth###
(1383588, 1383588)
Enhanced annealing, high Curie temperature and low-voltage gating in (Ga,Mn)As A surface oxide control study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, -10, '%', 2],[197.0, 180, 'K', 4],[203.0, 8, '%', 4]

As
###Enhanced annealing, high Curie temperature and low-voltage gating in (Ga,Mn)As: A surface oxide control study|K. Olejnik,M. H. S. Owen,V. Novak,J. Masek,A. C. Irvine,J. Wunderlich,T. Jungwirth###
(1383590, 1383590)
Enhanced annealing, high Curie temperature and low-voltage gating in (Ga,Mn)As A surface oxide control study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, -10, '%', 2],[195.0, 180, 'K', 4],[201.0, 8, '%', 4]

Ga
###Enhanced annealing, high Curie temperature and low-voltage gating in (Ga,Mn)As: A surface oxide control study|K. Olejnik,M. H. S. Owen,V. Novak,J. Masek,A. C. Irvine,J. Wunderlich,T. Jungwirth###
(1383604, 1383604)
 (Ga,Mn)As and related diluted magnetic semiconductors play a major role inspintronics research because of their potential to combine ferromagnetism andsemiconducting properties in one physical system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, -10, '%', 1],[181.0, 180, 'K', 3],[187.0, 8, '%', 3]

Mn
###Enhanced annealing, high Curie temperature and low-voltage gating in (Ga,Mn)As: A surface oxide control study|K. Olejnik,M. H. S. Owen,V. Novak,J. Masek,A. C. Irvine,J. Wunderlich,T. Jungwirth###
(1383606, 1383606)
 (Ga,Mn)As and related diluted magnetic semiconductors play a major role inspintronics research because of their potential to combine ferromagnetism andsemiconducting properties in one physical system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, -10, '%', 1],[179.0, 180, 'K', 3],[185.0, 8, '%', 3]

As
###Enhanced annealing, high Curie temperature and low-voltage gating in (Ga,Mn)As: A surface oxide control study|K. Olejnik,M. H. S. Owen,V. Novak,J. Masek,A. C. Irvine,J. Wunderlich,T. Jungwirth###
(1383608, 1383608)
 (Ga,Mn)As and related diluted magnetic semiconductors play a major role inspintronics research because of their potential to combine ferromagnetism andsemiconducting properties in one physical system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, -10, '%', 1],[177.0, 180, 'K', 3],[183.0, 8, '%', 3]

MnGa
###Enhanced annealing, high Curie temperature and low-voltage gating in (Ga,Mn)As: A surface oxide control study|K. Olejnik,M. H. S. Owen,V. Novak,J. Masek,A. C. Irvine,J. Wunderlich,T. Jungwirth###
(1383679, 1383680)
 Ferromagnetism requires1-10% of substitutional MnGa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, -10, '%', 0],[105.0, 180, 'K', 2],[111.0, 8, '%', 2]

Ga
###Enhanced annealing, high Curie temperature and low-voltage gating in (Ga,Mn)As: A surface oxide control study|K. Olejnik,M. H. S. Owen,V. Novak,J. Masek,A. C. Irvine,J. Wunderlich,T. Jungwirth###
(1383731, 1383731)
 We presentexperiments in which by etching the (Ga,Mn)As surface oxide we achieve adramatic reduction of annealing times necessary to optimize the ferromagneticfilm after growth, and report Curie temperature of 180 K at approximately 8% ofMnGa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, -10, '%', 2],[54.0, 180, 'K', 0],[60.0, 8, '%', 0]

Mn
###Enhanced annealing, high Curie temperature and low-voltage gating in (Ga,Mn)As: A surface oxide control study|K. Olejnik,M. H. S. Owen,V. Novak,J. Masek,A. C. Irvine,J. Wunderlich,T. Jungwirth###
(1383733, 1383733)
 We presentexperiments in which by etching the (Ga,Mn)As surface oxide we achieve adramatic reduction of annealing times necessary to optimize the ferromagneticfilm after growth, and report Curie temperature of 180 K at approximately 8% ofMnGa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, -10, '%', 2],[52.0, 180, 'K', 0],[58.0, 8, '%', 0]

As
###Enhanced annealing, high Curie temperature and low-voltage gating in (Ga,Mn)As: A surface oxide control study|K. Olejnik,M. H. S. Owen,V. Novak,J. Masek,A. C. Irvine,J. Wunderlich,T. Jungwirth###
(1383735, 1383735)
 We presentexperiments in which by etching the (Ga,Mn)As surface oxide we achieve adramatic reduction of annealing times necessary to optimize the ferromagneticfilm after growth, and report Curie temperature of 180 K at approximately 8% ofMnGa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, -10, '%', 2],[50.0, 180, 'K', 0],[56.0, 8, '%', 0]

MnGa
###Enhanced annealing, high Curie temperature and low-voltage gating in (Ga,Mn)As: A surface oxide control study|K. Olejnik,M. H. S. Owen,V. Novak,J. Masek,A. C. Irvine,J. Wunderlich,T. Jungwirth###
(1383797, 1383798)
 We presentexperiments in which by etching the (Ga,Mn)As surface oxide we achieve adramatic reduction of annealing times necessary to optimize the ferromagneticfilm after growth, and report Curie temperature of 180 K at approximately 8% ofMnGa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, -10, '%', 2],[12.0, 180, 'K', 0],[6.0, 8, '%', 0]

Mn
###Enhanced annealing, high Curie temperature and low-voltage gating in (Ga,Mn)As: A surface oxide control study|K. Olejnik,M. H. S. Owen,V. Novak,J. Masek,A. C. Irvine,J. Wunderlich,T. Jungwirth###
(1383829, 1383829)
 Our study elucidates the mechanism controlling the removal of the mostdetrimental, interstitial Mn defect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, -10, '%', 3],[44.0, 180, 'K', 1],[38.0, 8, '%', 1]

Ga
###Enhanced annealing, high Curie temperature and low-voltage gating in (Ga,Mn)As: A surface oxide control study|K. Olejnik,M. H. S. Owen,V. Novak,J. Masek,A. C. Irvine,J. Wunderlich,T. Jungwirth###
(1383858, 1383858)
 The limits and utility of electricalgating of the highly-doped (Ga,Mn)As semiconductor are not yet established; sofar electric-field effects have been demonstrated on magnetization with tens ofVolts applied on a top-gate, field effect transistor structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[187.0, -10, '%', 4],[73.0, 180, 'K', 2],[67.0, 8, '%', 2]

Mn
###Enhanced annealing, high Curie temperature and low-voltage gating in (Ga,Mn)As: A surface oxide control study|K. Olejnik,M. H. S. Owen,V. Novak,J. Masek,A. C. Irvine,J. Wunderlich,T. Jungwirth###
(1383860, 1383860)
 The limits and utility of electricalgating of the highly-doped (Ga,Mn)As semiconductor are not yet established; sofar electric-field effects have been demonstrated on magnetization with tens ofVolts applied on a top-gate, field effect transistor structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[189.0, -10, '%', 4],[75.0, 180, 'K', 2],[69.0, 8, '%', 2]

As
###Enhanced annealing, high Curie temperature and low-voltage gating in (Ga,Mn)As: A surface oxide control study|K. Olejnik,M. H. S. Owen,V. Novak,J. Masek,A. C. Irvine,J. Wunderlich,T. Jungwirth###
(1383862, 1383862)
 The limits and utility of electricalgating of the highly-doped (Ga,Mn)As semiconductor are not yet established; sofar electric-field effects have been demonstrated on magnetization with tens ofVolts applied on a top-gate, field effect transistor structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[191.0, -10, '%', 4],[77.0, 180, 'K', 2],[71.0, 8, '%', 2]

In
###Enhanced annealing, high Curie temperature and low-voltage gating in (Ga,Mn)As: A surface oxide control study|K. Olejnik,M. H. S. Owen,V. Novak,J. Masek,A. C. Irvine,J. Wunderlich,T. Jungwirth###
(1383925, 1383925)
 In the secondpart of the paper we present a back-gate, n<missing VAR>-GaAs/AlAs/GaMnAs transistoroperating at a few Volts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[254.0, -10, '%', 5],[140.0, 180, 'K', 3],[134.0, 8, '%', 3]

GaAs/AlAs/GaMnAs
###Enhanced annealing, high Curie temperature and low-voltage gating in (Ga,Mn)As: A surface oxide control study|K. Olejnik,M. H. S. Owen,V. Novak,J. Masek,A. C. Irvine,J. Wunderlich,T. Jungwirth###
(1383953, 1383961)
 In the secondpart of the paper we present a back-gate, n<missing VAR>-GaAs/AlAs/GaMnAs transistoroperating at a few Volts.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[282.0, -10, '%', 5],[168.0, 180, 'K', 3],[162.0, 8, '%', 3]

Ga
###Enhanced annealing, high Curie temperature and low-voltage gating in (Ga,Mn)As: A surface oxide control study|K. Olejnik,M. H. S. Owen,V. Novak,J. Masek,A. C. Irvine,J. Wunderlich,T. Jungwirth###
(1383990, 1383990)
 Inspired by the etching study of (Ga,Mn)As films weapply the oxide-etching/re-oxidation procedure to reduce the thickness (arialdensity of carriers) of the (Ga,Mn)As and observe a large enhancement of thegating efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[319.0, -10, '%', 6],[205.0, 180, 'K', 4],[199.0, 8, '%', 4]

Mn
###Enhanced annealing, high Curie temperature and low-voltage gating in (Ga,Mn)As: A surface oxide control study|K. Olejnik,M. H. S. Owen,V. Novak,J. Masek,A. C. Irvine,J. Wunderlich,T. Jungwirth###
(1383992, 1383992)
 Inspired by the etching study of (Ga,Mn)As films weapply the oxide-etching/re-oxidation procedure to reduce the thickness (arialdensity of carriers) of the (Ga,Mn)As and observe a large enhancement of thegating efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[321.0, -10, '%', 6],[207.0, 180, 'K', 4],[201.0, 8, '%', 4]

As
###Enhanced annealing, high Curie temperature and low-voltage gating in (Ga,Mn)As: A surface oxide control study|K. Olejnik,M. H. S. Owen,V. Novak,J. Masek,A. C. Irvine,J. Wunderlich,T. Jungwirth###
(1383994, 1383994)
 Inspired by the etching study of (Ga,Mn)As films weapply the oxide-etching/re-oxidation procedure to reduce the thickness (arialdensity of carriers) of the (Ga,Mn)As and observe a large enhancement of thegating efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[323.0, -10, '%', 6],[209.0, 180, 'K', 4],[203.0, 8, '%', 4]

Ga
###Enhanced annealing, high Curie temperature and low-voltage gating in (Ga,Mn)As: A surface oxide control study|K. Olejnik,M. H. S. Owen,V. Novak,J. Masek,A. C. Irvine,J. Wunderlich,T. Jungwirth###
(1384039, 1384039)
 Inspired by the etching study of (Ga,Mn)As films weapply the oxide-etching/re-oxidation procedure to reduce the thickness (arialdensity of carriers) of the (Ga,Mn)As and observe a large enhancement of thegating efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[368.0, -10, '%', 6],[254.0, 180, 'K', 4],[248.0, 8, '%', 4]

Mn
###Enhanced annealing, high Curie temperature and low-voltage gating in (Ga,Mn)As: A surface oxide control study|K. Olejnik,M. H. S. Owen,V. Novak,J. Masek,A. C. Irvine,J. Wunderlich,T. Jungwirth###
(1384041, 1384041)
 Inspired by the etching study of (Ga,Mn)As films weapply the oxide-etching/re-oxidation procedure to reduce the thickness (arialdensity of carriers) of the (Ga,Mn)As and observe a large enhancement of thegating efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[370.0, -10, '%', 6],[256.0, 180, 'K', 4],[250.0, 8, '%', 4]

As
###Enhanced annealing, high Curie temperature and low-voltage gating in (Ga,Mn)As: A surface oxide control study|K. Olejnik,M. H. S. Owen,V. Novak,J. Masek,A. C. Irvine,J. Wunderlich,T. Jungwirth###
(1384043, 1384043)
 Inspired by the etching study of (Ga,Mn)As films weapply the oxide-etching/re-oxidation procedure to reduce the thickness (arialdensity of carriers) of the (Ga,Mn)As and observe a large enhancement of thegating efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[372.0, -10, '%', 6],[258.0, 180, 'K', 4],[252.0, 8, '%', 4]

Pr0.70Ca0.30MnO3
###Small angle neutron scattering study of the step-like magnetic transformation in Pr0.70Ca0.30MnO3|D. Saurel,Ch. Simon,A. Brulet,A. Heinemann,C. Martin###
(1384123, 1384129)
Small angle neutron scattering study of the step-like magnetic transformation in Pr0.70Ca0.30MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 5, 'K', 2],[166.0, 5, 'T', 2],[169.0, 2, 'K', 2],[250.0, 5, 'K', 4],[263.0, 5, 'K', 4]

S
###Small angle neutron scattering study of the step-like magnetic transformation in Pr0.70Ca0.30MnO3|D. Saurel,Ch. Simon,A. Brulet,A. Heinemann,C. Martin###
(1384141, 1384141)
 Small angle neutron scattering (SANS) magnetic and electrical transportmeasurements were performed to study a single crystal of Pr0.7Ca0.3MnO3, acolossal magnetoresistive (CMR) material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 5, 'K', 1],[154.0, 5, 'T', 1],[157.0, 2, 'K', 1],[238.0, 5, 'K', 3],[251.0, 5, 'K', 3]

S
###Small angle neutron scattering study of the step-like magnetic transformation in Pr0.70Ca0.30MnO3|D. Saurel,Ch. Simon,A. Brulet,A. Heinemann,C. Martin###
(1384144, 1384144)
 Small angle neutron scattering (SANS) magnetic and electrical transportmeasurements were performed to study a single crystal of Pr0.7Ca0.3MnO3, acolossal magnetoresistive (CMR) material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 5, 'K', 1],[151.0, 5, 'T', 1],[154.0, 2, 'K', 1],[235.0, 5, 'K', 3],[248.0, 5, 'K', 3]

Pr0.7Ca0.3MnO3
###Small angle neutron scattering study of the step-like magnetic transformation in Pr0.70Ca0.30MnO3|D. Saurel,Ch. Simon,A. Brulet,A. Heinemann,C. Martin###
(1384174, 1384180)
 Small angle neutron scattering (SANS) magnetic and electrical transportmeasurements were performed to study a single crystal of Pr0.7Ca0.3MnO3, acolossal magnetoresistive (CMR) material.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 5, 'K', 1],[115.0, 5, 'T', 1],[118.0, 2, 'K', 1],[199.0, 5, 'K', 3],[212.0, 5, 'K', 3]

C
###Small angle neutron scattering study of the step-like magnetic transformation in Pr0.70Ca0.30MnO3|D. Saurel,Ch. Simon,A. Brulet,A. Heinemann,C. Martin###
(1384191, 1384191)
 Small angle neutron scattering (SANS) magnetic and electrical transportmeasurements were performed to study a single crystal of Pr0.7Ca0.3MnO3, acolossal magnetoresistive (CMR) material.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 5, 'K', 1],[104.0, 5, 'T', 1],[107.0, 2, 'K', 1],[188.0, 5, 'K', 3],[201.0, 5, 'K', 3]

I
###Small angle neutron scattering study of the step-like magnetic transformation in Pr0.70Ca0.30MnO3|D. Saurel,Ch. Simon,A. Brulet,A. Heinemann,C. Martin###
(1384238, 1384238)
 While the magnetic field inducedtransformation of this phase separated compound consisting of anantiferromagnetic insulating phase (AFI) and a ferromagnetic insulating phase(FI), is continuous at high temperature (above 5K), at lower temperature a steplike transformation is observed (around 5T at 2K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 5, 'K', 0],[57.0, 5, 'T', 0],[60.0, 2, 'K', 0],[141.0, 5, 'K', 2],[154.0, 5, 'K', 2]

(FI)
###Small angle neutron scattering study of the step-like magnetic transformation in Pr0.70Ca0.30MnO3|D. Saurel,Ch. Simon,A. Brulet,A. Heinemann,C. Martin###
(1384252, 1384255)
 While the magnetic field inducedtransformation of this phase separated compound consisting of anantiferromagnetic insulating phase (AFI) and a ferromagnetic insulating phase(FI), is continuous at high temperature (above 5K), at lower temperature a steplike transformation is observed (around 5T at 2K).
Featurization successful!
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 5, 'K', 0],[40.0, 5, 'T', 0],[43.0, 2, 'K', 0],[124.0, 5, 'K', 2],[137.0, 5, 'K', 2]

S
###Small angle neutron scattering study of the step-like magnetic transformation in Pr0.70Ca0.30MnO3|D. Saurel,Ch. Simon,A. Brulet,A. Heinemann,C. Martin###
(1384311, 1384311)
 Macroscopic magnetizationmeasurements and SANS indicate that this transformation occurs by the formationof mesoscopic ferromagnetic metallic (FM) domains in the AFI phase, and,eventually, in the FI phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 5, 'K', 1],[16.0, 5, 'T', 1],[13.0, 2, 'K', 1],[68.0, 5, 'K', 1],[81.0, 5, 'K', 1]

NS
###Small angle neutron scattering study of the step-like magnetic transformation in Pr0.70Ca0.30MnO3|D. Saurel,Ch. Simon,A. Brulet,A. Heinemann,C. Martin###
(1384313, 1384314)
 Macroscopic magnetizationmeasurements and SANS indicate that this transformation occurs by the formationof mesoscopic ferromagnetic metallic (FM) domains in the AFI phase, and,eventually, in the FI phase.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 5, 'K', 1],[18.0, 5, 'T', 1],[15.0, 2, 'K', 1],[65.0, 5, 'K', 1],[78.0, 5, 'K', 1]

F
###Small angle neutron scattering study of the step-like magnetic transformation in Pr0.70Ca0.30MnO3|D. Saurel,Ch. Simon,A. Brulet,A. Heinemann,C. Martin###
(1384342, 1384342)
 Macroscopic magnetizationmeasurements and SANS indicate that this transformation occurs by the formationof mesoscopic ferromagnetic metallic (FM) domains in the AFI phase, and,eventually, in the FI phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 5, 'K', 1],[47.0, 5, 'T', 1],[44.0, 2, 'K', 1],[37.0, 5, 'K', 1],[50.0, 5, 'K', 1]

FI
###Small angle neutron scattering study of the step-like magnetic transformation in Pr0.70Ca0.30MnO3|D. Saurel,Ch. Simon,A. Brulet,A. Heinemann,C. Martin###
(1384353, 1384354)
 Macroscopic magnetizationmeasurements and SANS indicate that this transformation occurs by the formationof mesoscopic ferromagnetic metallic (FM) domains in the AFI phase, and,eventually, in the FI phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 5, 'K', 1],[58.0, 5, 'T', 1],[55.0, 2, 'K', 1],[25.0, 5, 'K', 1],[38.0, 5, 'K', 1]

FI
###Small angle neutron scattering study of the step-like magnetic transformation in Pr0.70Ca0.30MnO3|D. Saurel,Ch. Simon,A. Brulet,A. Heinemann,C. Martin###
(1384370, 1384371)
 Macroscopic magnetizationmeasurements and SANS indicate that this transformation occurs by the formationof mesoscopic ferromagnetic metallic (FM) domains in the AFI phase, and,eventually, in the FI phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 5, 'K', 1],[75.0, 5, 'T', 1],[72.0, 2, 'K', 1],[8.0, 5, 'K', 1],[21.0, 5, 'K', 1]

FI
###Small angle neutron scattering study of the step-like magnetic transformation in Pr0.70Ca0.30MnO3|D. Saurel,Ch. Simon,A. Brulet,A. Heinemann,C. Martin###
(1384417, 1384418)
 Although above 5K this transformation iscontinuous, below 5K a magnetization step marks the abrupt transition from alarge scale FI/AFI phase separation to a large scale phase separation betweenAFI, FI and FM<missing VAR> phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 5, 'K', 2],[122.0, 5, 'T', 2],[119.0, 2, 'K', 2],[38.0, 5, 'K', 0],[25.0, 5, 'K', 0]

FI
###Small angle neutron scattering study of the step-like magnetic transformation in Pr0.70Ca0.30MnO3|D. Saurel,Ch. Simon,A. Brulet,A. Heinemann,C. Martin###
(1384421, 1384422)
 Although above 5K this transformation iscontinuous, below 5K a magnetization step marks the abrupt transition from alarge scale FI/AFI phase separation to a large scale phase separation betweenAFI, FI and FM<missing VAR> phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 5, 'K', 2],[126.0, 5, 'T', 2],[123.0, 2, 'K', 2],[42.0, 5, 'K', 0],[29.0, 5, 'K', 0]

FI
###Small angle neutron scattering study of the step-like magnetic transformation in Pr0.70Ca0.30MnO3|D. Saurel,Ch. Simon,A. Brulet,A. Heinemann,C. Martin###
(1384444, 1384445)
 Although above 5K this transformation iscontinuous, below 5K a magnetization step marks the abrupt transition from alarge scale FI/AFI phase separation to a large scale phase separation betweenAFI, FI and FM<missing VAR> phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[174.0, 5, 'K', 2],[149.0, 5, 'T', 2],[146.0, 2, 'K', 2],[65.0, 5, 'K', 0],[52.0, 5, 'K', 0]

FI
###Small angle neutron scattering study of the step-like magnetic transformation in Pr0.70Ca0.30MnO3|D. Saurel,Ch. Simon,A. Brulet,A. Heinemann,C. Martin###
(1384448, 1384449)
 Although above 5K this transformation iscontinuous, below 5K a magnetization step marks the abrupt transition from alarge scale FI/AFI phase separation to a large scale phase separation betweenAFI, FI and FM<missing VAR> phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 5, 'K', 2],[153.0, 5, 'T', 2],[150.0, 2, 'K', 2],[69.0, 5, 'K', 0],[56.0, 5, 'K', 0]

F
###Small angle neutron scattering study of the step-like magnetic transformation in Pr0.70Ca0.30MnO3|D. Saurel,Ch. Simon,A. Brulet,A. Heinemann,C. Martin###
(1384453, 1384453)
 Although above 5K this transformation iscontinuous, below 5K a magnetization step marks the abrupt transition from alarge scale FI/AFI phase separation to a large scale phase separation betweenAFI, FI and FM<missing VAR> phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[183.0, 5, 'K', 2],[158.0, 5, 'T', 2],[155.0, 2, 'K', 2],[74.0, 5, 'K', 0],[61.0, 5, 'K', 0]

FI
###Small angle neutron scattering study of the step-like magnetic transformation in Pr0.70Ca0.30MnO3|D. Saurel,Ch. Simon,A. Brulet,A. Heinemann,C. Martin###
(1384542, 1384543)
 The occurrence of magnetization stepscould result from an intrinsic behavior of the AFI phase at low temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[272.0, 5, 'K', 4],[247.0, 5, 'T', 4],[244.0, 2, 'K', 4],[163.0, 5, 'K', 2],[150.0, 5, 'K', 2]

C
###Study of Short-distance Spin and Charge Correlations and Local Density-of-States in the CMR regime of the One-Orbital Model for Manganites|Rong Yu,Shuai Dong,Cengiz Sen,Gonzalo Alvarez,Elbio Dagotto###
(1384592, 1384592)
Study of Short-distance Spin and Charge Correlations and Local Density-of-States in the CMR regime of the One-Orbital Model for Manganites.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 2, 'g', 2]

C
###Study of Short-distance Spin and Charge Correlations and Local Density-of-States in the CMR regime of the One-Orbital Model for Manganites|Rong Yu,Shuai Dong,Cengiz Sen,Gonzalo Alvarez,Elbio Dagotto###
(1384643, 1384643)
 The metal-insulator transition, and the associated magnetic transition, inthe colossal magnetoresistance (CMR) regime of the one-orbital model formanganites is here studied using Monte Carlo (M<missing VAR>C) techniques.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 2, 'g', 1]

C
###Study of Short-distance Spin and Charge Correlations and Local Density-of-States in the CMR regime of the One-Orbital Model for Manganites|Rong Yu,Shuai Dong,Cengiz Sen,Gonzalo Alvarez,Elbio Dagotto###
(1384679, 1384679)
 The metal-insulator transition, and the associated magnetic transition, inthe colossal magnetoresistance (CMR) regime of the one-orbital model formanganites is here studied using Monte Carlo (M<missing VAR>C) techniques.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 2, 'g', 1]

In
###Study of Short-distance Spin and Charge Correlations and Local Density-of-States in the CMR regime of the One-Orbital Model for Manganites|Rong Yu,Shuai Dong,Cengiz Sen,Gonzalo Alvarez,Elbio Dagotto###
(1384742, 1384742)
 In the CMR regime, a strong competition between theferromagnetic metallic and antiferromagnetic charge-ordered insulating statesis observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 2, 'g', 2]

C
###Study of Short-distance Spin and Charge Correlations and Local Density-of-States in the CMR regime of the One-Orbital Model for Manganites|Rong Yu,Shuai Dong,Cengiz Sen,Gonzalo Alvarez,Elbio Dagotto###
(1384746, 1384746)
 In the CMR regime, a strong competition between theferromagnetic metallic and antiferromagnetic charge-ordered insulating statesis observed.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 2, 'g', 2]

C
###Study of Short-distance Spin and Charge Correlations and Local Density-of-States in the CMR regime of the One-Orbital Model for Manganites|Rong Yu,Shuai Dong,Cengiz Sen,Gonzalo Alvarez,Elbio Dagotto###
(1384871, 1384871)
 Moreover, it isargued that the system is dynamically inhomogeneous, with short-range chargeand spin correlations that slowly evolve with M<missing VAR>C time, producing the glassycharacteristics of the CMR state.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 2, 'g', 4]

C
###Study of Short-distance Spin and Charge Correlations and Local Density-of-States in the CMR regime of the One-Orbital Model for Manganites|Rong Yu,Shuai Dong,Cengiz Sen,Gonzalo Alvarez,Elbio Dagotto###
(1384889, 1384889)
 Moreover, it isargued that the system is dynamically inhomogeneous, with short-range chargeand spin correlations that slowly evolve with M<missing VAR>C time, producing the glassycharacteristics of the CMR state.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[176.0, 2, 'g', 4]

S
###Study of Short-distance Spin and Charge Correlations and Local Density-of-States in the CMR regime of the One-Orbital Model for Manganites|Rong Yu,Shuai Dong,Cengiz Sen,Gonzalo Alvarez,Elbio Dagotto###
(1384910, 1384910)
 The local density-of-states (LDOS) is alsoinvestigated, and a pseudogap (PG) is found to exist in the CMR temperaturerange.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[197.0, 2, 'g', 5]

P
###Study of Short-distance Spin and Charge Correlations and Local Density-of-States in the CMR regime of the One-Orbital Model for Manganites|Rong Yu,Shuai Dong,Cengiz Sen,Gonzalo Alvarez,Elbio Dagotto###
(1384928, 1384928)
 The local density-of-states (LDOS) is alsoinvestigated, and a pseudogap (PG) is found to exist in the CMR temperaturerange.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[215.0, 2, 'g', 5]

C
###Study of Short-distance Spin and Charge Correlations and Local Density-of-States in the CMR regime of the One-Orbital Model for Manganites|Rong Yu,Shuai Dong,Cengiz Sen,Gonzalo Alvarez,Elbio Dagotto###
(1384944, 1384944)
 The local density-of-states (LDOS) is alsoinvestigated, and a pseudogap (PG) is found to exist in the CMR temperaturerange.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[231.0, 2, 'g', 5]

P
###Study of Short-distance Spin and Charge Correlations and Local Density-of-States in the CMR regime of the One-Orbital Model for Manganites|Rong Yu,Shuai Dong,Cengiz Sen,Gonzalo Alvarez,Elbio Dagotto###
(1384962, 1384962)
 The width of the PG<missing VAR> in the LDOS is calculated and directly compared withrecent scanning-tunneling-spectroscopy (ST<missing VAR>S) experimental results.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[249.0, 2, 'g', 6]

OS
###Study of Short-distance Spin and Charge Correlations and Local Density-of-States in the CMR regime of the One-Orbital Model for Manganites|Rong Yu,Shuai Dong,Cengiz Sen,Gonzalo Alvarez,Elbio Dagotto###
(1384971, 1384972)
 The width of the PG<missing VAR> in the LDOS is calculated and directly compared withrecent scanning-tunneling-spectroscopy (ST<missing VAR>S) experimental results.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[258.0, 2, 'g', 6]

S
###Study of Short-distance Spin and Charge Correlations and Local Density-of-States in the CMR regime of the One-Orbital Model for Manganites|Rong Yu,Shuai Dong,Cengiz Sen,Gonzalo Alvarez,Elbio Dagotto###
(1384996, 1384996)
 The width of the PG<missing VAR> in the LDOS is calculated and directly compared withrecent scanning-tunneling-spectroscopy (ST<missing VAR>S) experimental results.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[283.0, 2, 'g', 6]

S
###Study of Short-distance Spin and Charge Correlations and Local Density-of-States in the CMR regime of the One-Orbital Model for Manganites|Rong Yu,Shuai Dong,Cengiz Sen,Gonzalo Alvarez,Elbio Dagotto###
(1384998, 1384998)
 The width of the PG<missing VAR> in the LDOS is calculated and directly compared withrecent scanning-tunneling-spectroscopy (ST<missing VAR>S) experimental results.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[285.0, 2, 'g', 6]

P
###Study of Short-distance Spin and Charge Correlations and Local Density-of-States in the CMR regime of the One-Orbital Model for Manganites|Rong Yu,Shuai Dong,Cengiz Sen,Gonzalo Alvarez,Elbio Dagotto###
(1385065, 1385065)
 Theagreement between our calculation and the experiment suggests that thedepletion of the conductance at low bias observed experimentally is areflection on the existence of a PG<missing VAR> in the LDOS spectra, as opposed to a hardgap.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[352.0, 2, 'g', 7]

OS
###Study of Short-distance Spin and Charge Correlations and Local Density-of-States in the CMR regime of the One-Orbital Model for Manganites|Rong Yu,Shuai Dong,Cengiz Sen,Gonzalo Alvarez,Elbio Dagotto###
(1385074, 1385075)
 Theagreement between our calculation and the experiment suggests that thedepletion of the conductance at low bias observed experimentally is areflection on the existence of a PG<missing VAR> in the LDOS spectra, as opposed to a hardgap.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[361.0, 2, 'g', 7]

S
###Study of Short-distance Spin and Charge Correlations and Local Density-of-States in the CMR regime of the One-Orbital Model for Manganites|Rong Yu,Shuai Dong,Cengiz Sen,Gonzalo Alvarez,Elbio Dagotto###
(1385104, 1385104)
 The apparent homogeneity observed via ST<missing VAR>S techniques could be caused bythe slow time characteristics of this probe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[391.0, 2, 'g', 8]

S
###Study of Short-distance Spin and Charge Correlations and Local Density-of-States in the CMR regime of the One-Orbital Model for Manganites|Rong Yu,Shuai Dong,Cengiz Sen,Gonzalo Alvarez,Elbio Dagotto###
(1385106, 1385106)
 The apparent homogeneity observed via ST<missing VAR>S techniques could be caused bythe slow time characteristics of this probe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[393.0, 2, 'g', 8]

C
###Study of Short-distance Spin and Charge Correlations and Local Density-of-States in the CMR regime of the One-Orbital Model for Manganites|Rong Yu,Shuai Dong,Cengiz Sen,Gonzalo Alvarez,Elbio Dagotto###
(1385157, 1385157)
 Faster experimental methods shouldunveil a rather inhomogeneous state in the CMR regime, as already observed inneutron scattering experiments.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[444.0, 2, 'g', 9]

GaMnAs
###Piezo-control of magnetic anisotropy in GaMnAs: Reversible manipulation of magnetization orientation and irreversible magnetization switching|C. Bihler,M. Althammer,A. Brandlmaier,S. Gepraegs,M. Weiler,M. Opel,W. Schoch,W. Limmer,R. Gross,M. S. Brandt,S. T. B. Goennenwein###
(1385200, 1385202)
Piezo-control of magnetic anisotropy in GaMnAs Reversible manipulation of magnetization orientation and irreversible magnetization switching.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[289.0, 50, 'K', 6],[332.0, 70, 'degree', 6]

GaMnAs
###Piezo-control of magnetic anisotropy in GaMnAs: Reversible manipulation of magnetization orientation and irreversible magnetization switching|C. Bihler,M. Althammer,A. Brandlmaier,S. Gepraegs,M. Weiler,M. Opel,W. Schoch,W. Limmer,R. Gross,M. S. Brandt,S. T. B. Goennenwein###
(1385257, 1385259)
 Using a GaMnAs epilayeras the ferromagnetic semiconductor and applying the piezo-stress along its[110] direction, we quantify the magnetic anisotropy as a function of thevoltage Vp<missing VAR> applied to the piezoelectric actuator using anisotropicmagnetoresistance techniques.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[232.0, 50, 'K', 4],[275.0, 70, 'degree', 4]

V
###Piezo-control of magnetic anisotropy in GaMnAs: Reversible manipulation of magnetization orientation and irreversible magnetization switching|C. Bihler,M. Althammer,A. Brandlmaier,S. Gepraegs,M. Weiler,M. Opel,W. Schoch,W. Limmer,R. Gross,M. S. Brandt,S. T. B. Goennenwein###
(1385317, 1385317)
 Using a GaMnAs epilayeras the ferromagnetic semiconductor and applying the piezo-stress along its[110] direction, we quantify the magnetic anisotropy as a function of thevoltage Vp<missing VAR> applied to the piezoelectric actuator using anisotropicmagnetoresistance techniques.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[174.0, 50, 'K', 4],[217.0, 70, 'degree', 4]

V
###Piezo-control of magnetic anisotropy in GaMnAs: Reversible manipulation of magnetization orientation and irreversible magnetization switching|C. Bihler,M. Althammer,A. Brandlmaier,S. Gepraegs,M. Weiler,M. Opel,W. Schoch,W. Limmer,R. Gross,M. S. Brandt,S. T. B. Goennenwein###
(1385408, 1385408)
 We find that the easy axis of the strain-induceduniaxial magnetic anisotropy contribution can be inverted from the [110] to the[1-10] direction via the application of appropriate voltages Vp<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 50, 'K', 3],[126.0, 70, 'degree', 3]

At
###Piezo-control of magnetic anisotropy in GaMnAs: Reversible manipulation of magnetization orientation and irreversible magnetization switching|C. Bihler,M. Althammer,A. Brandlmaier,S. Gepraegs,M. Weiler,M. Opel,W. Schoch,W. Limmer,R. Gross,M. S. Brandt,S. T. B. Goennenwein###
(1385412, 1385412)
 At T<missing VAR>5K themagnetoelastic term is a minor contribution to the magnetic anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 50, 'K', 2],[122.0, 70, 'degree', 2]

K
###Piezo-control of magnetic anisotropy in GaMnAs: Reversible manipulation of magnetization orientation and irreversible magnetization switching|C. Bihler,M. Althammer,A. Brandlmaier,S. Gepraegs,M. Weiler,M. Opel,W. Schoch,W. Limmer,R. Gross,M. S. Brandt,S. T. B. Goennenwein###
(1385416, 1385416)
 At T<missing VAR>5K themagnetoelastic term is a minor contribution to the magnetic anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 50, 'K', 2],[118.0, 70, 'degree', 2]

(H)
###Piezo-control of magnetic anisotropy in GaMnAs: Reversible manipulation of magnetization orientation and irreversible magnetization switching|C. Bihler,M. Althammer,A. Brandlmaier,S. Gepraegs,M. Weiler,M. Opel,W. Schoch,W. Limmer,R. Gross,M. S. Brandt,S. T. B. Goennenwein###
(1385461, 1385463)
Nevertheless, we show that the switching fields of rho(H) loops are shifted asa function of Vp<missing VAR> at this temperature.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 50, 'K', 1],[71.0, 70, 'degree', 1]

V
###Piezo-control of magnetic anisotropy in GaMnAs: Reversible manipulation of magnetization orientation and irreversible magnetization switching|C. Bihler,M. Althammer,A. Brandlmaier,S. Gepraegs,M. Weiler,M. Opel,W. Schoch,W. Limmer,R. Gross,M. S. Brandt,S. T. B. Goennenwein###
(1385480, 1385480)
Nevertheless, we show that the switching fields of rho(H) loops are shifted asa function of Vp<missing VAR> at this temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 50, 'K', 1],[54.0, 70, 'degree', 1]

At
###Piezo-control of magnetic anisotropy in GaMnAs: Reversible manipulation of magnetization orientation and irreversible magnetization switching|C. Bihler,M. Althammer,A. Brandlmaier,S. Gepraegs,M. Weiler,M. Opel,W. Schoch,W. Limmer,R. Gross,M. S. Brandt,S. T. B. Goennenwein###
(1385490, 1385490)
 At 50K - where the magnetoelastic termdominates the magnetic anisotropy - we are able to tune the magnetizationorientation by about 70 degree solely by means of the electrical voltage Vp<missing VAR>applied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[1.0, 50, 'K', 0],[44.0, 70, 'degree', 0]

V
###Piezo-control of magnetic anisotropy in GaMnAs: Reversible manipulation of magnetization orientation and irreversible magnetization switching|C. Bihler,M. Althammer,A. Brandlmaier,S. Gepraegs,M. Weiler,M. Opel,W. Schoch,W. Limmer,R. Gross,M. S. Brandt,S. T. B. Goennenwein###
(1385550, 1385550)
 At 50K - where the magnetoelastic termdominates the magnetic anisotropy - we are able to tune the magnetizationorientation by about 70 degree solely by means of the electrical voltage Vp<missing VAR>applied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 50, 'K', 0],[16.0, 70, 'degree', 0]

As
###Piezo-control of magnetic anisotropy in GaMnAs: Reversible manipulation of magnetization orientation and irreversible magnetization switching|C. Bihler,M. Althammer,A. Brandlmaier,S. Gepraegs,M. Weiler,M. Opel,W. Schoch,W. Limmer,R. Gross,M. S. Brandt,S. T. B. Goennenwein###
(1385658, 1385658)
 As an example, wedemonstrate piezo-voltage induced irreversible magnetization switching atT<missing VAR>40K, which constitutes the basic principle of a nonvolatile memory element.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 50, 'K', 3],[124.0, 70, 'degree', 3]

K
###Piezo-control of magnetic anisotropy in GaMnAs: Reversible manipulation of magnetization orientation and irreversible magnetization switching|C. Bihler,M. Althammer,A. Brandlmaier,S. Gepraegs,M. Weiler,M. Opel,W. Schoch,W. Limmer,R. Gross,M. S. Brandt,S. T. B. Goennenwein###
(1385687, 1385687)
 As an example, wedemonstrate piezo-voltage induced irreversible magnetization switching atT<missing VAR>40K, which constitutes the basic principle of a nonvolatile memory element.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[196.0, 50, 'K', 3],[153.0, 70, 'degree', 3]

Ga1-x
###Electrical transport and ferromagnetism in Ga1-xMnxAs synthesized by ion implantation and pulsed-laser melting|M. A. Scarpulla,R. Farshchi,P. R. Stone,R. V. Chopdekar,K. M. Yu,Y. Suzuki,O. D. Dubon###
(1385729, 1385732)
Electrical transport and ferromagnetism in Ga1-xMnxAs synthesized by ion implantation and pulsed-laser melting.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

As
###Electrical transport and ferromagnetism in Ga1-xMnxAs synthesized by ion implantation and pulsed-laser melting|M. A. Scarpulla,R. Farshchi,P. R. Stone,R. V. Chopdekar,K. M. Yu,Y. Suzuki,O. D. Dubon###
(1385734, 1385734)
Electrical transport and ferromagnetism in Ga1-xMnxAs synthesized by ion implantation and pulsed-laser melting.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga1-x
###Electrical transport and ferromagnetism in Ga1-xMnxAs synthesized by ion implantation and pulsed-laser melting|M. A. Scarpulla,R. Farshchi,P. R. Stone,R. V. Chopdekar,K. M. Yu,Y. Suzuki,O. D. Dubon###
(1385786, 1385789)
 We present a detailed investigation of the magnetic and magnetotransportproperties of thin films of ferromagnetic Ga1-xMnxAs synthesized using ionimplantation and pulsed-laser melting (II-PLM).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

As
###Electrical transport and ferromagnetism in Ga1-xMnxAs synthesized by ion implantation and pulsed-laser melting|M. A. Scarpulla,R. Farshchi,P. R. Stone,R. V. Chopdekar,K. M. Yu,Y. Suzuki,O. D. Dubon###
(1385791, 1385791)
 We present a detailed investigation of the magnetic and magnetotransportproperties of thin films of ferromagnetic Ga1-xMnxAs synthesized using ionimplantation and pulsed-laser melting (II-PLM).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Electrical transport and ferromagnetism in Ga1-xMnxAs synthesized by ion implantation and pulsed-laser melting|M. A. Scarpulla,R. Farshchi,P. R. Stone,R. V. Chopdekar,K. M. Yu,Y. Suzuki,O. D. Dubon###
(1385811, 1385812)
 We present a detailed investigation of the magnetic and magnetotransportproperties of thin films of ferromagnetic Ga1-xMnxAs synthesized using ionimplantation and pulsed-laser melting (II-PLM).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Electrical transport and ferromagnetism in Ga1-xMnxAs synthesized by ion implantation and pulsed-laser melting|M. A. Scarpulla,R. Farshchi,P. R. Stone,R. V. Chopdekar,K. M. Yu,Y. Suzuki,O. D. Dubon###
(1385814, 1385814)
 We present a detailed investigation of the magnetic and magnetotransportproperties of thin films of ferromagnetic Ga1-xMnxAs synthesized using ionimplantation and pulsed-laser melting (II-PLM).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Electrical transport and ferromagnetism in Ga1-xMnxAs synthesized by ion implantation and pulsed-laser melting|M. A. Scarpulla,R. Farshchi,P. R. Stone,R. V. Chopdekar,K. M. Yu,Y. Suzuki,O. D. Dubon###
(1385858, 1385859)
 The field andtemperature-dependent magnetization, magnetic anisotropy, temperature-dependentresistivity, magnetoresistance, and Hall effect of II-PLM Ga1-xMnxAs films haveall of the characteristic signatures of the strong p-d interaction of holes andMn ions observed in the dilute hole-mediated ferromagnetic phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Electrical transport and ferromagnetism in Ga1-xMnxAs synthesized by ion implantation and pulsed-laser melting|M. A. Scarpulla,R. Farshchi,P. R. Stone,R. V. Chopdekar,K. M. Yu,Y. Suzuki,O. D. Dubon###
(1385861, 1385861)
 The field andtemperature-dependent magnetization, magnetic anisotropy, temperature-dependentresistivity, magnetoresistance, and Hall effect of II-PLM Ga1-xMnxAs films haveall of the characteristic signatures of the strong p-d interaction of holes andMn ions observed in the dilute hole-mediated ferromagnetic phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga1-x
###Electrical transport and ferromagnetism in Ga1-xMnxAs synthesized by ion implantation and pulsed-laser melting|M. A. Scarpulla,R. Farshchi,P. R. Stone,R. V. Chopdekar,K. M. Yu,Y. Suzuki,O. D. Dubon###
(1385865, 1385868)
 The field andtemperature-dependent magnetization, magnetic anisotropy, temperature-dependentresistivity, magnetoresistance, and Hall effect of II-PLM Ga1-xMnxAs films haveall of the characteristic signatures of the strong p-d interaction of holes andMn ions observed in the dilute hole-mediated ferromagnetic phase.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

As
###Electrical transport and ferromagnetism in Ga1-xMnxAs synthesized by ion implantation and pulsed-laser melting|M. A. Scarpulla,R. Farshchi,P. R. Stone,R. V. Chopdekar,K. M. Yu,Y. Suzuki,O. D. Dubon###
(1385870, 1385870)
 The field andtemperature-dependent magnetization, magnetic anisotropy, temperature-dependentresistivity, magnetoresistance, and Hall effect of II-PLM Ga1-xMnxAs films haveall of the characteristic signatures of the strong p-d interaction of holes andMn ions observed in the dilute hole-mediated ferromagnetic phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Electrical transport and ferromagnetism in Ga1-xMnxAs synthesized by ion implantation and pulsed-laser melting|M. A. Scarpulla,R. Farshchi,P. R. Stone,R. V. Chopdekar,K. M. Yu,Y. Suzuki,O. D. Dubon###
(1385906, 1385906)
 The field andtemperature-dependent magnetization, magnetic anisotropy, temperature-dependentresistivity, magnetoresistance, and Hall effect of II-PLM Ga1-xMnxAs films haveall of the characteristic signatures of the strong p-d interaction of holes andMn ions observed in the dilute hole-mediated ferromagnetic phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Electrical transport and ferromagnetism in Ga1-xMnxAs synthesized by ion implantation and pulsed-laser melting|M. A. Scarpulla,R. Farshchi,P. R. Stone,R. V. Chopdekar,K. M. Yu,Y. Suzuki,O. D. Dubon###
(1385942, 1385943)
 Theferromagnetic and electrical transport properties of II-PLM films correspond tothe peak substitutional Mn concentration meaning that the non-uniform Mn depthdistribution is unimportant in determining the film properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Electrical transport and ferromagnetism in Ga1-xMnxAs synthesized by ion implantation and pulsed-laser melting|M. A. Scarpulla,R. Farshchi,P. R. Stone,R. V. Chopdekar,K. M. Yu,Y. Suzuki,O. D. Dubon###
(1385945, 1385945)
 Theferromagnetic and electrical transport properties of II-PLM films correspond tothe peak substitutional Mn concentration meaning that the non-uniform Mn depthdistribution is unimportant in determining the film properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Electrical transport and ferromagnetism in Ga1-xMnxAs synthesized by ion implantation and pulsed-laser melting|M. A. Scarpulla,R. Farshchi,P. R. Stone,R. V. Chopdekar,K. M. Yu,Y. Suzuki,O. D. Dubon###
(1385962, 1385962)
 Theferromagnetic and electrical transport properties of II-PLM films correspond tothe peak substitutional Mn concentration meaning that the non-uniform Mn depthdistribution is unimportant in determining the film properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Electrical transport and ferromagnetism in Ga1-xMnxAs synthesized by ion implantation and pulsed-laser melting|M. A. Scarpulla,R. Farshchi,P. R. Stone,R. V. Chopdekar,K. M. Yu,Y. Suzuki,O. D. Dubon###
(1385976, 1385976)
 Theferromagnetic and electrical transport properties of II-PLM films correspond tothe peak substitutional Mn concentration meaning that the non-uniform Mn depthdistribution is unimportant in determining the film properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnGa
###Electrical transport and ferromagnetism in Ga1-xMnxAs synthesized by ion implantation and pulsed-laser melting|M. A. Scarpulla,R. Farshchi,P. R. Stone,R. V. Chopdekar,K. M. Yu,Y. Suzuki,O. D. Dubon###
(1386047, 1386048)
 Goodquantitative agreement is found with films grown by low temperature molecularbeam epitaxy (LT-MBE) and having the similar substitutional MnGa composition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Electrical transport and ferromagnetism in Ga1-xMnxAs synthesized by ion implantation and pulsed-laser melting|M. A. Scarpulla,R. Farshchi,P. R. Stone,R. V. Chopdekar,K. M. Yu,Y. Suzuki,O. D. Dubon###
(1386063, 1386064)
Additionally, we demonstrate that II-PLM Ga1-xMnxAs films are free frominterstitial MnI because of the high temperature processing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Electrical transport and ferromagnetism in Ga1-xMnxAs synthesized by ion implantation and pulsed-laser melting|M. A. Scarpulla,R. Farshchi,P. R. Stone,R. V. Chopdekar,K. M. Yu,Y. Suzuki,O. D. Dubon###
(1386066, 1386066)
Additionally, we demonstrate that II-PLM Ga1-xMnxAs films are free frominterstitial MnI because of the high temperature processing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga1-x
###Electrical transport and ferromagnetism in Ga1-xMnxAs synthesized by ion implantation and pulsed-laser melting|M. A. Scarpulla,R. Farshchi,P. R. Stone,R. V. Chopdekar,K. M. Yu,Y. Suzuki,O. D. Dubon###
(1386070, 1386073)
Additionally, we demonstrate that II-PLM Ga1-xMnxAs films are free frominterstitial MnI because of the high temperature processing.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

As
###Electrical transport and ferromagnetism in Ga1-xMnxAs synthesized by ion implantation and pulsed-laser melting|M. A. Scarpulla,R. Farshchi,P. R. Stone,R. V. Chopdekar,K. M. Yu,Y. Suzuki,O. D. Dubon###
(1386075, 1386075)
Additionally, we demonstrate that II-PLM Ga1-xMnxAs films are free frominterstitial MnI because of the high temperature processing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnI
###Electrical transport and ferromagnetism in Ga1-xMnxAs synthesized by ion implantation and pulsed-laser melting|M. A. Scarpulla,R. Farshchi,P. R. Stone,R. V. Chopdekar,K. M. Yu,Y. Suzuki,O. D. Dubon###
(1386088, 1386089)
Additionally, we demonstrate that II-PLM Ga1-xMnxAs films are free frominterstitial MnI because of the high temperature processing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Electrical transport and ferromagnetism in Ga1-xMnxAs synthesized by ion implantation and pulsed-laser melting|M. A. Scarpulla,R. Farshchi,P. R. Stone,R. V. Chopdekar,K. M. Yu,Y. Suzuki,O. D. Dubon###
(1386104, 1386104)
 At high Mnimplantation doses the kinetics of solute redistribution during solidificationalone determine the maximum resulting MnGa concentration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Electrical transport and ferromagnetism in Ga1-xMnxAs synthesized by ion implantation and pulsed-laser melting|M. A. Scarpulla,R. Farshchi,P. R. Stone,R. V. Chopdekar,K. M. Yu,Y. Suzuki,O. D. Dubon###
(1386108, 1386108)
 At high Mnimplantation doses the kinetics of solute redistribution during solidificationalone determine the maximum resulting MnGa concentration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnGa
###Electrical transport and ferromagnetism in Ga1-xMnxAs synthesized by ion implantation and pulsed-laser melting|M. A. Scarpulla,R. Farshchi,P. R. Stone,R. V. Chopdekar,K. M. Yu,Y. Suzuki,O. D. Dubon###
(1386140, 1386141)
 At high Mnimplantation doses the kinetics of solute redistribution during solidificationalone determine the maximum resulting MnGa concentration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Electrical transport and ferromagnetism in Ga1-xMnxAs synthesized by ion implantation and pulsed-laser melting|M. A. Scarpulla,R. Farshchi,P. R. Stone,R. V. Chopdekar,K. M. Yu,Y. Suzuki,O. D. Dubon###
(1386175, 1386176)
 Uniaxial anisotropybetween in-plane [-110]and [110] directions is present in II-PLM Ga1-xMnxAsgiving evidence for this being an intrinsic property of the carrier-mediatedferromagnetic phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Electrical transport and ferromagnetism in Ga1-xMnxAs synthesized by ion implantation and pulsed-laser melting|M. A. Scarpulla,R. Farshchi,P. R. Stone,R. V. Chopdekar,K. M. Yu,Y. Suzuki,O. D. Dubon###
(1386178, 1386178)
 Uniaxial anisotropybetween in-plane [-110]and [110] directions is present in II-PLM Ga1-xMnxAsgiving evidence for this being an intrinsic property of the carrier-mediatedferromagnetic phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga1-x
###Electrical transport and ferromagnetism in Ga1-xMnxAs synthesized by ion implantation and pulsed-laser melting|M. A. Scarpulla,R. Farshchi,P. R. Stone,R. V. Chopdekar,K. M. Yu,Y. Suzuki,O. D. Dubon###
(1386182, 1386185)
 Uniaxial anisotropybetween in-plane [-110]and [110] directions is present in II-PLM Ga1-xMnxAsgiving evidence for this being an intrinsic property of the carrier-mediatedferromagnetic phase.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

As
###Electrical transport and ferromagnetism in Ga1-xMnxAs synthesized by ion implantation and pulsed-laser melting|M. A. Scarpulla,R. Farshchi,P. R. Stone,R. V. Chopdekar,K. M. Yu,Y. Suzuki,O. D. Dubon###
(1386187, 1386187)
 Uniaxial anisotropybetween in-plane [-110]and [110] directions is present in II-PLM Ga1-xMnxAsgiving evidence for this being an intrinsic property of the carrier-mediatedferromagnetic phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Anisotropic scattering in angular-dependent magnetoresistance oscillations of quasi-2D and quasi-1D metals: beyond the relaxation-time approximation|M. F. Smith,Ross McKenzie###
(1386635, 1386635)
 These results help clarifythe meaning of the relaxation rate determined from fits of angular-dependentmagnetoresistance oscillations (AMRO) experimental data to theoreticalexpressions.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Anisotropic scattering in angular-dependent magnetoresistance oscillations of quasi-2D and quasi-1D metals: beyond the relaxation-time approximation|M. F. Smith,Ross McKenzie###
(1386662, 1386662)
 Furthermore, we suggest how AMRO might be used to probe thedominant scattering mechanism.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OSF
###Modeling of Spin Metal-Oxide-Semiconductor Field-Effect-Transistor: A Non-Equilibrium Green's Function Approach with Spin Relaxation|Tony Low,Mark S. Lundstrom,Dmitri E. Nikonov###
(1386750, 1386752)
 A spin metal-oxide-semiconductor field-effect-transistor (spin M<missing VAR>OSFET), whichcombines a Schottky-barrier M<missing VAR>OSFET with ferromagnetic source and draincontacts, is a promising device for spintronic logic.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OSF
###Modeling of Spin Metal-Oxide-Semiconductor Field-Effect-Transistor: A Non-Equilibrium Green's Function Approach with Spin Relaxation|Tony Low,Mark S. Lundstrom,Dmitri E. Nikonov###
(1386770, 1386772)
 A spin metal-oxide-semiconductor field-effect-transistor (spin M<missing VAR>OSFET), whichcombines a Schottky-barrier M<missing VAR>OSFET with ferromagnetic source and draincontacts, is a promising device for spintronic logic.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Modeling of Spin Metal-Oxide-Semiconductor Field-Effect-Transistor: A Non-Equilibrium Green's Function Approach with Spin Relaxation|Tony Low,Mark S. Lundstrom,Dmitri E. Nikonov###
(1386876, 1386876)
 Previous simulationstudies predict that this device should display a very high magnetoresistance(MR) ratio (between the cases of parallel and anti-parallel magnetizations) forthe case of half-metal ferromagnets (HM<missing VAR>F).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Modeling of Spin Metal-Oxide-Semiconductor Field-Effect-Transistor: A Non-Equilibrium Green's Function Approach with Spin Relaxation|Tony Low,Mark S. Lundstrom,Dmitri E. Nikonov###
(1386878, 1386878)
 Previous simulationstudies predict that this device should display a very high magnetoresistance(MR) ratio (between the cases of parallel and anti-parallel magnetizations) forthe case of half-metal ferromagnets (HM<missing VAR>F).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Modeling of Spin Metal-Oxide-Semiconductor Field-Effect-Transistor: A Non-Equilibrium Green's Function Approach with Spin Relaxation|Tony Low,Mark S. Lundstrom,Dmitri E. Nikonov###
(1386899, 1386899)
 We use the non-equilibrium Greens<missing VAR>function (NEGF) formalism to describe tunneling and carrier transport in thisdevice and to incorporate spin relaxation at the HM<missing VAR>F-semiconductor interfaces.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Modeling of Spin Metal-Oxide-Semiconductor Field-Effect-Transistor: A Non-Equilibrium Green's Function Approach with Spin Relaxation|Tony Low,Mark S. Lundstrom,Dmitri E. Nikonov###
(1386902, 1386902)
 We use the non-equilibrium Greens<missing VAR>function (NEGF) formalism to describe tunneling and carrier transport in thisdevice and to incorporate spin relaxation at the HM<missing VAR>F-semiconductor interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Modeling of Spin Metal-Oxide-Semiconductor Field-Effect-Transistor: A Non-Equilibrium Green's Function Approach with Spin Relaxation|Tony Low,Mark S. Lundstrom,Dmitri E. Nikonov###
(1386940, 1386940)
 We use the non-equilibrium Greens<missing VAR>function (NEGF) formalism to describe tunneling and carrier transport in thisdevice and to incorporate spin relaxation at the HM<missing VAR>F-semiconductor interfaces.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Modeling of Spin Metal-Oxide-Semiconductor Field-Effect-Transistor: A Non-Equilibrium Green's Function Approach with Spin Relaxation|Tony Low,Mark S. Lundstrom,Dmitri E. Nikonov###
(1386942, 1386942)
 We use the non-equilibrium Greens<missing VAR>function (NEGF) formalism to describe tunneling and carrier transport in thisdevice and to incorporate spin relaxation at the HM<missing VAR>F-semiconductor interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OSF
###Modeling of Spin Metal-Oxide-Semiconductor Field-Effect-Transistor: A Non-Equilibrium Green's Function Approach with Spin Relaxation|Tony Low,Mark S. Lundstrom,Dmitri E. Nikonov###
(1387027, 1387029)
 This reduces the MR ratio and sets a practical limit for spinM<missing VAR>OSFET performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Modeling of Spin Metal-Oxide-Semiconductor Field-Effect-Transistor: A Non-Equilibrium Green's Function Approach with Spin Relaxation|Tony Low,Mark S. Lundstrom,Dmitri E. Nikonov###
(1387069, 1387069)
 In addition, spin relaxation at the detector side isfound to be more detrimental to MR than that at the injector side, for drainbias less than the energy difference of the minority spin edge and the Fermilevel.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si/SiGe/Si
###Large Magnetoresistance of a Dilute $p$-Si/SiGe/Si Quantum Well in a Parallel Magnetic Field|I. L. Drichko,I. Yu. Smirnov,A. V. Suslov,O. A. Mironov,D. R. Leadley###
(1387174, 1387179)
Large Magnetoresistance of a Dilute p<missing VAR>-Si/SiGe/Si Quantum Well in a Parallel Magnetic Field.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[131.0, 18, 'T', 2],[342.0, 13, 'T', 6]

Si/SiGe/Si
###Large Magnetoresistance of a Dilute $p$-Si/SiGe/Si Quantum Well in a Parallel Magnetic Field|I. L. Drichko,I. Yu. Smirnov,A. V. Suslov,O. A. Mironov,D. R. Leadley###
(1387232, 1387237)
 We report the results of an experimental study of the magnetoresistancerhoxx in two samples of p<missing VAR>-Si/SiGe/Si with low carrier concentrationsp<missing VAR>8.2times1010 cm-2 and p<missing VAR>2times1011 cm-2.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[73.0, 18, 'T', 1],[284.0, 13, 'T', 5]

K
###Large Magnetoresistance of a Dilute $p$-Si/SiGe/Si Quantum Well in a Parallel Magnetic Field|I. L. Drichko,I. Yu. Smirnov,A. V. Suslov,O. A. Mironov,D. R. Leadley###
(1387294, 1387294)
 Theresearch was performed in the temperature range of 0.3-2 K in the magneticfields of up to 18 T, parallel to the two-dimensional (2D) channel plane at twoorientations of the in-plane magnetic field Bparallel against the currentI Bparallel perp I and Bparallel parallel I.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 18, 'T', 0],[227.0, 13, 'T', 4]

B
###Large Magnetoresistance of a Dilute $p$-Si/SiGe/Si Quantum Well in a Parallel Magnetic Field|I. L. Drichko,I. Yu. Smirnov,A. V. Suslov,O. A. Mironov,D. R. Leadley###
(1387351, 1387351)
 Theresearch was performed in the temperature range of 0.3-2 K in the magneticfields of up to 18 T, parallel to the two-dimensional (2D) channel plane at twoorientations of the in-plane magnetic field Bparallel against the currentI Bparallel perp I and Bparallel parallel I.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 18, 'T', 0],[170.0, 13, 'T', 4]

I
###Large Magnetoresistance of a Dilute $p$-Si/SiGe/Si Quantum Well in a Parallel Magnetic Field|I. L. Drichko,I. Yu. Smirnov,A. V. Suslov,O. A. Mironov,D. R. Leadley###
(1387361, 1387361)
 Theresearch was performed in the temperature range of 0.3-2 K in the magneticfields of up to 18 T, parallel to the two-dimensional (2D) channel plane at twoorientations of the in-plane magnetic field Bparallel against the currentI Bparallel perp I and Bparallel parallel I.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 18, 'T', 0],[160.0, 13, 'T', 4]

B
###Large Magnetoresistance of a Dilute $p$-Si/SiGe/Si Quantum Well in a Parallel Magnetic Field|I. L. Drichko,I. Yu. Smirnov,A. V. Suslov,O. A. Mironov,D. R. Leadley###
(1387363, 1387363)
 Theresearch was performed in the temperature range of 0.3-2 K in the magneticfields of up to 18 T, parallel to the two-dimensional (2D) channel plane at twoorientations of the in-plane magnetic field Bparallel against the currentI Bparallel perp I and Bparallel parallel I.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 18, 'T', 0],[158.0, 13, 'T', 4]

I
###Large Magnetoresistance of a Dilute $p$-Si/SiGe/Si Quantum Well in a Parallel Magnetic Field|I. L. Drichko,I. Yu. Smirnov,A. V. Suslov,O. A. Mironov,D. R. Leadley###
(1387368, 1387368)
 Theresearch was performed in the temperature range of 0.3-2 K in the magneticfields of up to 18 T, parallel to the two-dimensional (2D) channel plane at twoorientations of the in-plane magnetic field Bparallel against the currentI Bparallel perp I and Bparallel parallel I.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 18, 'T', 0],[153.0, 13, 'T', 4]

B
###Large Magnetoresistance of a Dilute $p$-Si/SiGe/Si Quantum Well in a Parallel Magnetic Field|I. L. Drichko,I. Yu. Smirnov,A. V. Suslov,O. A. Mironov,D. R. Leadley###
(1387372, 1387372)
 Theresearch was performed in the temperature range of 0.3-2 K in the magneticfields of up to 18 T, parallel to the two-dimensional (2D) channel plane at twoorientations of the in-plane magnetic field Bparallel against the currentI Bparallel perp I and Bparallel parallel I.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 18, 'T', 0],[149.0, 13, 'T', 4]

I
###Large Magnetoresistance of a Dilute $p$-Si/SiGe/Si Quantum Well in a Parallel Magnetic Field|I. L. Drichko,I. Yu. Smirnov,A. V. Suslov,O. A. Mironov,D. R. Leadley###
(1387377, 1387377)
 Theresearch was performed in the temperature range of 0.3-2 K in the magneticfields of up to 18 T, parallel to the two-dimensional (2D) channel plane at twoorientations of the in-plane magnetic field Bparallel against the currentI Bparallel perp I and Bparallel parallel I.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 18, 'T', 0],[144.0, 13, 'T', 4]

In
###Large Magnetoresistance of a Dilute $p$-Si/SiGe/Si Quantum Well in a Parallel Magnetic Field|I. L. Drichko,I. Yu. Smirnov,A. V. Suslov,O. A. Mironov,D. R. Leadley###
(1387380, 1387380)
 In the samplewith the lowest density in the magnetic field range of 0-7.2 T<missing VAR> the temperaturedependence of rhoxx demonstrates the metallic characteristics (d<missing VAR>rhoxx/dT>0).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 18, 'T', 1],[141.0, 13, 'T', 3]

B
###Large Magnetoresistance of a Dilute $p$-Si/SiGe/Si Quantum Well in a Parallel Magnetic Field|I. L. Drichko,I. Yu. Smirnov,A. V. Suslov,O. A. Mironov,D. R. Leadley###
(1387452, 1387452)
 However, at Bparallel 7.2 T<missing VAR> the derivative d<missing VAR>rhoxx/dT reverses the sign.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 18, 'T', 2],[69.0, 13, 'T', 2]

At
###Large Magnetoresistance of a Dilute $p$-Si/SiGe/Si Quantum Well in a Parallel Magnetic Field|I. L. Drichko,I. Yu. Smirnov,A. V. Suslov,O. A. Mironov,D. R. Leadley###
(1387514, 1387514)
 AtBparallel cong 13 T there is a transition from the dependenceln(Deltarhoxx / rho0)propto Bparallel2 to the dependenceln(Deltarhoxx / rho0)propto Bparallel.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[204.0, 18, 'T', 4],[7.0, 13, 'T', 0]

B
###Large Magnetoresistance of a Dilute $p$-Si/SiGe/Si Quantum Well in a Parallel Magnetic Field|I. L. Drichko,I. Yu. Smirnov,A. V. Suslov,O. A. Mironov,D. R. Leadley###
(1387517, 1387517)
 AtBparallel cong 13 T there is a transition from the dependenceln(Deltarhoxx / rho0)propto Bparallel2 to the dependenceln(Deltarhoxx / rho0)propto Bparallel.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[207.0, 18, 'T', 4],[4.0, 13, 'T', 0]

B
###Large Magnetoresistance of a Dilute $p$-Si/SiGe/Si Quantum Well in a Parallel Magnetic Field|I. L. Drichko,I. Yu. Smirnov,A. V. Suslov,O. A. Mironov,D. R. Leadley###
(1387551, 1387551)
 AtBparallel cong 13 T there is a transition from the dependenceln(Deltarhoxx / rho0)propto Bparallel2 to the dependenceln(Deltarhoxx / rho0)propto Bparallel.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[241.0, 18, 'T', 4],[30.0, 13, 'T', 0]

B
###Large Magnetoresistance of a Dilute $p$-Si/SiGe/Si Quantum Well in a Parallel Magnetic Field|I. L. Drichko,I. Yu. Smirnov,A. V. Suslov,O. A. Mironov,D. R. Leadley###
(1387575, 1387575)
 AtBparallel cong 13 T there is a transition from the dependenceln(Deltarhoxx / rho0)propto Bparallel2 to the dependenceln(Deltarhoxx / rho0)propto Bparallel.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[265.0, 18, 'T', 4],[54.0, 13, 'T', 0]

K
###Localization and the Anomalous Hall Effect in a "Dirty" Metallic Ferromagnet|P. Mitra,N. Kumar,N. Samarth###
(1387692, 1387692)
 We report magnetoresistance measurements over an extensive temperature range(0.1 K leq T<missing VAR> leq 100 K) in a disordered ferromagnetic semiconductor (gma).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 100, 'K', 0]

F
###Localization and the Anomalous Hall Effect in a "Dirty" Metallic Ferromagnet|P. Mitra,N. Kumar,N. Samarth###
(1387761, 1387761)
The study focuses on a series of metallic gma epilayers that lie in thevicinity of the metal-insulator transition (k<missing VAR>F lesim 1).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 100, 'K', 1]

At
###Localization and the Anomalous Hall Effect in a "Dirty" Metallic Ferromagnet|P. Mitra,N. Kumar,N. Samarth###
(1387771, 1387771)
 At lowtemperatures (T<missing VAR> < 4 K), we first confirm the results of earlier studies thatthe longitudinal conductivity shows a T<missing VAR>1/3 dependence, consistent withquantum corrections from carrier localization in a dirty metal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 100, 'K', 2]

K
###Localization and the Anomalous Hall Effect in a "Dirty" Metallic Ferromagnet|P. Mitra,N. Kumar,N. Samarth###
(1387785, 1387785)
 At lowtemperatures (T<missing VAR> < 4 K), we first confirm the results of earlier studies thatthe longitudinal conductivity shows a T<missing VAR>1/3 dependence, consistent withquantum corrections from carrier localization in a dirty metal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 100, 'K', 2]

In
###Localization and the Anomalous Hall Effect in a "Dirty" Metallic Ferromagnet|P. Mitra,N. Kumar,N. Samarth###
(1387850, 1387850)
 Inaddition, we find that the anomalous Hall conductivity exhibits universalbehavior in this temperature range, with no pronounced quantum corrections.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 100, 'K', 3]

In
###Localization and the Anomalous Hall Effect in a "Dirty" Metallic Ferromagnet|P. Mitra,N. Kumar,N. Samarth###
(1387984, 1387984)
 In contrast, at hightemperatures (T<missing VAR> gtrsim 4 K), neither the longitudinal nor the anomalous Hallconductivity exhibit universal behavior, indicating the dominance of inelasticscattering contributions down to liquid helium temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[285.0, 100, 'K', 5]

K
###Localization and the Anomalous Hall Effect in a "Dirty" Metallic Ferromagnet|P. Mitra,N. Kumar,N. Samarth###
(1388003, 1388003)
 In contrast, at hightemperatures (T<missing VAR> gtrsim 4 K), neither the longitudinal nor the anomalous Hallconductivity exhibit universal behavior, indicating the dominance of inelasticscattering contributions down to liquid helium temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[304.0, 100, 'K', 5]

In
###Correlation between microstructure and magnetotransport in organic semiconductor spin valve structures|Yaohua Liu,Shannon M. Watson,Taegweon Lee,Justin M. Gorham,Howard E. Katz,Julie A. Borchers,Howard D. Fairbrother,Daniel H. Reich###
(1388110, 1388110)
 In these devices, the organic semiconductor (OSC) Alq3(tris(8-hydroxyquinoline) aluminum) formed a spacer layer between ferromagnetic(FM) Co and Fe layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 4.2, 'K', 2],[343.0, 3, ',', 6],[453.0, 80, 'K', 8]

(OSC)
###Correlation between microstructure and magnetotransport in organic semiconductor spin valve structures|Yaohua Liu,Shannon M. Watson,Taegweon Lee,Justin M. Gorham,Howard E. Katz,Julie A. Borchers,Howard D. Fairbrother,Daniel H. Reich###
(1388123, 1388127)
 In these devices, the organic semiconductor (OSC) Alq3(tris(8-hydroxyquinoline) aluminum) formed a spacer layer between ferromagnetic(FM) Co and Fe layers.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 4.2, 'K', 2],[326.0, 3, ',', 6],[436.0, 80, 'K', 8]

F
###Correlation between microstructure and magnetotransport in organic semiconductor spin valve structures|Yaohua Liu,Shannon M. Watson,Taegweon Lee,Justin M. Gorham,Howard E. Katz,Julie A. Borchers,Howard D. Fairbrother,Daniel H. Reich###
(1388158, 1388158)
 In these devices, the organic semiconductor (OSC) Alq3(tris(8-hydroxyquinoline) aluminum) formed a spacer layer between ferromagnetic(FM) Co and Fe layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 4.2, 'K', 2],[295.0, 3, ',', 6],[405.0, 80, 'K', 8]

Co
###Correlation between microstructure and magnetotransport in organic semiconductor spin valve structures|Yaohua Liu,Shannon M. Watson,Taegweon Lee,Justin M. Gorham,Howard E. Katz,Julie A. Borchers,Howard D. Fairbrother,Daniel H. Reich###
(1388162, 1388162)
 In these devices, the organic semiconductor (OSC) Alq3(tris(8-hydroxyquinoline) aluminum) formed a spacer layer between ferromagnetic(FM) Co and Fe layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 4.2, 'K', 2],[291.0, 3, ',', 6],[401.0, 80, 'K', 8]

Fe
###Correlation between microstructure and magnetotransport in organic semiconductor spin valve structures|Yaohua Liu,Shannon M. Watson,Taegweon Lee,Justin M. Gorham,Howard E. Katz,Julie A. Borchers,Howard D. Fairbrother,Daniel H. Reich###
(1388166, 1388166)
 In these devices, the organic semiconductor (OSC) Alq3(tris(8-hydroxyquinoline) aluminum) formed a spacer layer between ferromagnetic(FM) Co and Fe layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 4.2, 'K', 2],[287.0, 3, ',', 6],[397.0, 80, 'K', 8]

PN
###Correlation between microstructure and magnetotransport in organic semiconductor spin valve structures|Yaohua Liu,Shannon M. Watson,Taegweon Lee,Justin M. Gorham,Howard E. Katz,Julie A. Borchers,Howard D. Fairbrother,Daniel H. Reich###
(1388287, 1388288)
 The devices microstructure was studied by X<missing VAR>-ray reflectometry,Auger electron spectroscopy and polarized neutron reflectometry (PNR).
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 4.2, 'K', 1],[165.0, 3, ',', 3],[275.0, 80, 'K', 5]

F
###Correlation between microstructure and magnetotransport in organic semiconductor spin valve structures|Yaohua Liu,Shannon M. Watson,Taegweon Lee,Justin M. Gorham,Howard E. Katz,Julie A. Borchers,Howard D. Fairbrother,Daniel H. Reich###
(1388344, 1388344)
 Thefilms show well-defined layers with modest average chemical roughness (3-5 nm)at the interface between the Alq3 and the surrounding FM<missing VAR> layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 4.2, 'K', 2],[109.0, 3, ',', 2],[219.0, 80, 'K', 4]

F
###Correlation between microstructure and magnetotransport in organic semiconductor spin valve structures|Yaohua Liu,Shannon M. Watson,Taegweon Lee,Justin M. Gorham,Howard E. Katz,Julie A. Borchers,Howard D. Fairbrother,Daniel H. Reich###
(1388373, 1388373)
Reflectometry shows that larger MR effects are associated with smallerFM<missing VAR>/Alq3 interface width (both chemical and magnetic) and a magnetically deadlayer at the Alq3/Fe interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 4.2, 'K', 3],[80.0, 3, ',', 1],[190.0, 80, 'K', 3]

Fe
###Correlation between microstructure and magnetotransport in organic semiconductor spin valve structures|Yaohua Liu,Shannon M. Watson,Taegweon Lee,Justin M. Gorham,Howard E. Katz,Julie A. Borchers,Howard D. Fairbrother,Daniel H. Reich###
(1388411, 1388411)
Reflectometry shows that larger MR effects are associated with smallerFM<missing VAR>/Alq3 interface width (both chemical and magnetic) and a magnetically deadlayer at the Alq3/Fe interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[195.0, 4.2, 'K', 3],[42.0, 3, ',', 1],[152.0, 80, 'K', 3]

PN
###Correlation between microstructure and magnetotransport in organic semiconductor spin valve structures|Yaohua Liu,Shannon M. Watson,Taegweon Lee,Justin M. Gorham,Howard E. Katz,Julie A. Borchers,Howard D. Fairbrother,Daniel H. Reich###
(1388418, 1388419)
 The PNR<missing VAR> data also show that the Co layer,which was deposited on top of the Alq3, adopts a multi-domain magneticstructure at low field and a perfect anti-parallel state is not obtained.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[202.0, 4.2, 'K', 4],[34.0, 3, ',', 0],[144.0, 80, 'K', 2]

Co
###Correlation between microstructure and magnetotransport in organic semiconductor spin valve structures|Yaohua Liu,Shannon M. Watson,Taegweon Lee,Justin M. Gorham,Howard E. Katz,Julie A. Borchers,Howard D. Fairbrother,Daniel H. Reich###
(1388432, 1388432)
 The PNR<missing VAR> data also show that the Co layer,which was deposited on top of the Alq3, adopts a multi-domain magneticstructure at low field and a perfect anti-parallel state is not obtained.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[216.0, 4.2, 'K', 4],[21.0, 3, ',', 0],[131.0, 80, 'K', 2]

Pr1-xSr
###Synthesis, structural and transport properties of the hole-doped Superconductor Pr_{1-x}Sr_xFeAsO|Gang Mu,Bin Zeng,Xiyu Zhu,Fei Han,Peng Cheng,Bing Shen,Hai-Hu Wen###
(1388633, 1388637)
Synthesis, structural and transport properties of the hole-doped Superconductor Pr1-xSrx<missing VAR>FeAsO.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[147.0, 16.3, 'K', 4],[150.0, 95, '%', 4],[298.0, 16.3, 'K', 8],[317.0, 45, 'Tesla', 8]

FeAsO
###Synthesis, structural and transport properties of the hole-doped Superconductor Pr_{1-x}Sr_xFeAsO|Gang Mu,Bin Zeng,Xiyu Zhu,Fei Han,Peng Cheng,Bing Shen,Hai-Hu Wen###
(1388639, 1388641)
Synthesis, structural and transport properties of the hole-doped Superconductor Pr1-xSrx<missing VAR>FeAsO.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 16.3, 'K', 4],[146.0, 95, '%', 4],[294.0, 16.3, 'K', 8],[313.0, 45, 'Tesla', 8]

PrFeAsO
###Synthesis, structural and transport properties of the hole-doped Superconductor Pr_{1-x}Sr_xFeAsO|Gang Mu,Bin Zeng,Xiyu Zhu,Fei Han,Peng Cheng,Bing Shen,Hai-Hu Wen###
(1388652, 1388655)
 Superconductivity was achieved in PrFeAsO by partially substituting Pr3with Sr2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 16.3, 'K', 3],[132.0, 95, '%', 3],[280.0, 16.3, 'K', 7],[299.0, 45, 'Tesla', 7]

Pr3
###Synthesis, structural and transport properties of the hole-doped Superconductor Pr_{1-x}Sr_xFeAsO|Gang Mu,Bin Zeng,Xiyu Zhu,Fei Han,Peng Cheng,Bing Shen,Hai-Hu Wen###
(1388663, 1388664)
 Superconductivity was achieved in PrFeAsO by partially substituting Pr3with Sr2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 16.3, 'K', 3],[123.0, 95, '%', 3],[271.0, 16.3, 'K', 7],[290.0, 45, 'Tesla', 7]

Sr2
###Synthesis, structural and transport properties of the hole-doped Superconductor Pr_{1-x}Sr_xFeAsO|Gang Mu,Bin Zeng,Xiyu Zhu,Fei Han,Peng Cheng,Bing Shen,Hai-Hu Wen###
(1388669, 1388670)
 Superconductivity was achieved in PrFeAsO by partially substituting Pr3with Sr2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 16.3, 'K', 3],[117.0, 95, '%', 3],[265.0, 16.3, 'K', 7],[284.0, 45, 'Tesla', 7]

Pr1-xSr
###Synthesis, structural and transport properties of the hole-doped Superconductor Pr_{1-x}Sr_xFeAsO|Gang Mu,Bin Zeng,Xiyu Zhu,Fei Han,Peng Cheng,Bing Shen,Hai-Hu Wen###
(1388694, 1388698)
 The electrical transport properties and structure of this newsuperconductor Pr1-xSrx<missing VAR>FeAsO at different doping levels (x<missing VAR>  0.05sim0.25) were investigated systematically.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[86.0, 16.3, 'K', 2],[89.0, 95, '%', 2],[237.0, 16.3, 'K', 6],[256.0, 45, 'Tesla', 6]

FeAsO
###Synthesis, structural and transport properties of the hole-doped Superconductor Pr_{1-x}Sr_xFeAsO|Gang Mu,Bin Zeng,Xiyu Zhu,Fei Han,Peng Cheng,Bing Shen,Hai-Hu Wen###
(1388700, 1388702)
 The electrical transport properties and structure of this newsuperconductor Pr1-xSrx<missing VAR>FeAsO at different doping levels (x<missing VAR>  0.05sim0.25) were investigated systematically.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 16.3, 'K', 2],[85.0, 95, '%', 2],[233.0, 16.3, 'K', 6],[252.0, 45, 'Tesla', 6]

Sr
###Synthesis, structural and transport properties of the hole-doped Superconductor Pr_{1-x}Sr_xFeAsO|Gang Mu,Bin Zeng,Xiyu Zhu,Fei Han,Peng Cheng,Bing Shen,Hai-Hu Wen###
(1388763, 1388763)
 It was found that the lattice constants(a-axis and c<missing VAR>-axis) increase monotonously with Sr or hole concentration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 16.3, 'K', 1],[24.0, 95, '%', 1],[172.0, 16.3, 'K', 5],[191.0, 45, 'Tesla', 5]

La1-xSr
###Synthesizing and characterization of hole doped nickel based superconductor (La$_{1-x}$Sr$_{x}$)NiAsO|Lei Fang,Huan Yang,Peng Cheng,Xiyu Zhu,Gang Mu,Hai-Hu Wen###
(1389055, 1389059)
Synthesizing and characterization of hole doped nickel based superconductor (La1-xSrx)NiAsO.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[76.0, 2.4, 'K', 2],[93.0, 3.7, 'K', 2],[223.0, 150, 'K', 4]

NiAsO
###Synthesizing and characterization of hole doped nickel based superconductor (La$_{1-x}$Sr$_{x}$)NiAsO|Lei Fang,Huan Yang,Peng Cheng,Xiyu Zhu,Gang Mu,Hai-Hu Wen###
(1389062, 1389064)
Synthesizing and characterization of hole doped nickel based superconductor (La1-xSrx)NiAsO.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 2.4, 'K', 2],[88.0, 3.7, 'K', 2],[218.0, 150, 'K', 4]

Ni
###Synthesizing and characterization of hole doped nickel based superconductor (La$_{1-x}$Sr$_{x}$)NiAsO|Lei Fang,Huan Yang,Peng Cheng,Xiyu Zhu,Gang Mu,Hai-Hu Wen###
(1389087, 1389087)
 We report the synthesizing and characterization of the hole doped Ni-basedsuperconductor (La1-xSrx)NiAsO.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 2.4, 'K', 1],[65.0, 3.7, 'K', 1],[195.0, 150, 'K', 3]

La1-xSr
###Synthesizing and characterization of hole doped nickel based superconductor (La$_{1-x}$Sr$_{x}$)NiAsO|Lei Fang,Huan Yang,Peng Cheng,Xiyu Zhu,Gang Mu,Hai-Hu Wen###
(1389095, 1389099)
 We report the synthesizing and characterization of the hole doped Ni-basedsuperconductor (La1-xSrx)NiAsO.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[36.0, 2.4, 'K', 1],[53.0, 3.7, 'K', 1],[183.0, 150, 'K', 3]

NiAsO
###Synthesizing and characterization of hole doped nickel based superconductor (La$_{1-x}$Sr$_{x}$)NiAsO|Lei Fang,Huan Yang,Peng Cheng,Xiyu Zhu,Gang Mu,Hai-Hu Wen###
(1389102, 1389104)
 We report the synthesizing and characterization of the hole doped Ni-basedsuperconductor (La1-xSrx)NiAsO.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 2.4, 'K', 1],[48.0, 3.7, 'K', 1],[178.0, 150, 'K', 3]

La
###Synthesizing and characterization of hole doped nickel based superconductor (La$_{1-x}$Sr$_{x}$)NiAsO|Lei Fang,Huan Yang,Peng Cheng,Xiyu Zhu,Gang Mu,Hai-Hu Wen###
(1389111, 1389111)
 By substituting La with Sr, thesuperconducting transition temperature Tc is increased from 2.4 K of theparent phase LaNiAsO to 3.7 K at the doping levels x<missing VAR> 0.1 - 0.2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 2.4, 'K', 0],[41.0, 3.7, 'K', 0],[171.0, 150, 'K', 2]

Sr
###Synthesizing and characterization of hole doped nickel based superconductor (La$_{1-x}$Sr$_{x}$)NiAsO|Lei Fang,Huan Yang,Peng Cheng,Xiyu Zhu,Gang Mu,Hai-Hu Wen###
(1389115, 1389115)
 By substituting La with Sr, thesuperconducting transition temperature Tc is increased from 2.4 K of theparent phase LaNiAsO to 3.7 K at the doping levels x<missing VAR> 0.1 - 0.2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 2.4, 'K', 0],[37.0, 3.7, 'K', 0],[167.0, 150, 'K', 2]

LaNiAsO
###Synthesizing and characterization of hole doped nickel based superconductor (La$_{1-x}$Sr$_{x}$)NiAsO|Lei Fang,Huan Yang,Peng Cheng,Xiyu Zhu,Gang Mu,Hai-Hu Wen###
(1389146, 1389149)
 By substituting La with Sr, thesuperconducting transition temperature Tc is increased from 2.4 K of theparent phase LaNiAsO to 3.7 K at the doping levels x<missing VAR> 0.1 - 0.2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 2.4, 'K', 0],[3.0, 3.7, 'K', 0],[133.0, 150, 'K', 2]

As
###Synthesizing and characterization of hole doped nickel based superconductor (La$_{1-x}$Sr$_{x}$)NiAsO|Lei Fang,Huan Yang,Peng Cheng,Xiyu Zhu,Gang Mu,Hai-Hu Wen###
(1389206, 1389206)
 The curveTc versus hole concentration shows a symmetric behavior as the electrondoped samples LaNiAs(O1-xFx).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 2.4, 'K', 1],[54.0, 3.7, 'K', 1],[76.0, 150, 'K', 1]

O1-xF
###Synthesizing and characterization of hole doped nickel based superconductor (La$_{1-x}$Sr$_{x}$)NiAsO|Lei Fang,Huan Yang,Peng Cheng,Xiyu Zhu,Gang Mu,Hai-Hu Wen###
(1389208, 1389212)
 The curveTc versus hole concentration shows a symmetric behavior as the electrondoped samples LaNiAs(O1-xFx).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[73.0, 2.4, 'K', 1],[56.0, 3.7, 'K', 1],[70.0, 150, 'K', 1]

Ni
###Synthesizing and characterization of hole doped nickel based superconductor (La$_{1-x}$Sr$_{x}$)NiAsO|Lei Fang,Huan Yang,Peng Cheng,Xiyu Zhu,Gang Mu,Hai-Hu Wen###
(1389227, 1389227)
 The normal state resistivity in Ni-basedsamples shows a good metallic behavior and reveals the absence of spin densitywave induced anomaly which appears in the Fe-based system at about 150 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 2.4, 'K', 2],[75.0, 3.7, 'K', 2],[55.0, 150, 'K', 0]

Fe
###Synthesizing and characterization of hole doped nickel based superconductor (La$_{1-x}$Sr$_{x}$)NiAsO|Lei Fang,Huan Yang,Peng Cheng,Xiyu Zhu,Gang Mu,Hai-Hu Wen###
(1389273, 1389273)
 The normal state resistivity in Ni-basedsamples shows a good metallic behavior and reveals the absence of spin densitywave induced anomaly which appears in the Fe-based system at about 150 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 2.4, 'K', 2],[121.0, 3.7, 'K', 2],[9.0, 150, 'K', 0]

LaNiAsO
###Synthesizing and characterization of hole doped nickel based superconductor (La$_{1-x}$Sr$_{x}$)NiAsO|Lei Fang,Huan Yang,Peng Cheng,Xiyu Zhu,Gang Mu,Hai-Hu Wen###
(1389311, 1389314)
 Halleffect measurements indicate that the electron conduction in the parent phaseLaNiAsO is dominated by electron-like charge carriers, while with more Srdoping, a hole-like band will emerge and finally prevail over the conduction,such a phenomenon reflects that the Fermi surface of LaNiAsO comprises ofelectron pockets and hole pockets, thus the sign of charge carriers could bechanged once the contribution of hole pockets overwhelms that of electronpockets.
Featurization terminated normally.
0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[176.0, 2.4, 'K', 3],[159.0, 3.7, 'K', 3],[29.0, 150, 'K', 1]

Sr
###Synthesizing and characterization of hole doped nickel based superconductor (La$_{1-x}$Sr$_{x}$)NiAsO|Lei Fang,Huan Yang,Peng Cheng,Xiyu Zhu,Gang Mu,Hai-Hu Wen###
(1389337, 1389337)
 Halleffect measurements indicate that the electron conduction in the parent phaseLaNiAsO is dominated by electron-like charge carriers, while with more Srdoping, a hole-like band will emerge and finally prevail over the conduction,such a phenomenon reflects that the Fermi surface of LaNiAsO comprises ofelectron pockets and hole pockets, thus the sign of charge carriers could bechanged once the contribution of hole pockets overwhelms that of electronpockets.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[202.0, 2.4, 'K', 3],[185.0, 3.7, 'K', 3],[55.0, 150, 'K', 1]

LaNiAsO
###Synthesizing and characterization of hole doped nickel based superconductor (La$_{1-x}$Sr$_{x}$)NiAsO|Lei Fang,Huan Yang,Peng Cheng,Xiyu Zhu,Gang Mu,Hai-Hu Wen###
(1389387, 1389390)
 Halleffect measurements indicate that the electron conduction in the parent phaseLaNiAsO is dominated by electron-like charge carriers, while with more Srdoping, a hole-like band will emerge and finally prevail over the conduction,such a phenomenon reflects that the Fermi surface of LaNiAsO comprises ofelectron pockets and hole pockets, thus the sign of charge carriers could bechanged once the contribution of hole pockets overwhelms that of electronpockets.
Featurization terminated normally.
0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[252.0, 2.4, 'K', 3],[235.0, 3.7, 'K', 3],[105.0, 150, 'K', 1]

La1-xSr
###Synthesizing and characterization of hole doped nickel based superconductor (La$_{1-x}$Sr$_{x}$)NiAsO|Lei Fang,Huan Yang,Peng Cheng,Xiyu Zhu,Gang Mu,Hai-Hu Wen###
(1389494, 1389498)
 Magnetoresistance measurements and the violation of Kohler ruleprovide further proof that multiband effect dominate the normal state transportof (La1-xSrx)NiAsO.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[359.0, 2.4, 'K', 4],[342.0, 3.7, 'K', 4],[212.0, 150, 'K', 2]

NiAsO
###Synthesizing and characterization of hole doped nickel based superconductor (La$_{1-x}$Sr$_{x}$)NiAsO|Lei Fang,Huan Yang,Peng Cheng,Xiyu Zhu,Gang Mu,Hai-Hu Wen###
(1389501, 1389503)
 Magnetoresistance measurements and the violation of Kohler ruleprovide further proof that multiband effect dominate the normal state transportof (La1-xSrx)NiAsO.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[366.0, 2.4, 'K', 4],[349.0, 3.7, 'K', 4],[219.0, 150, 'K', 2]

F
###Non-equilibrium magnetism in dual spin valves|A. Aziz,O. P. Wessely,M. Ali,D. M. Edwards,C. H. Marrows,B. J. Hickey,M. G. Blamire###
(1390053, 1390053)
 GMR arises from differential scattering ofthe majority and minority spin electrons by a ferromagnet (FM) so that theresistance when the FM<missing VAR> layers separated by non-magnetic (NM) spacers arealigned by an applied field is different to when they are antiparallel.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 2007, 'Nobel', 1]

F
###Non-equilibrium magnetism in dual spin valves|A. Aziz,O. P. Wessely,M. Ali,D. M. Edwards,C. H. Marrows,B. J. Hickey,M. G. Blamire###
(1390070, 1390070)
 GMR arises from differential scattering ofthe majority and minority spin electrons by a ferromagnet (FM) so that theresistance when the FM<missing VAR> layers separated by non-magnetic (NM) spacers arealigned by an applied field is different to when they are antiparallel.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 2007, 'Nobel', 1]

N
###Non-equilibrium magnetism in dual spin valves|A. Aziz,O. P. Wessely,M. Ali,D. M. Edwards,C. H. Marrows,B. J. Hickey,M. G. Blamire###
(1390084, 1390084)
 GMR arises from differential scattering ofthe majority and minority spin electrons by a ferromagnet (FM) so that theresistance when the FM<missing VAR> layers separated by non-magnetic (NM) spacers arealigned by an applied field is different to when they are antiparallel.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 2007, 'Nobel', 1]

In
###Non-equilibrium magnetism in dual spin valves|A. Aziz,O. P. Wessely,M. Ali,D. M. Edwards,C. H. Marrows,B. J. Hickey,M. G. Blamire###
(1390118, 1390118)
 In 1996Slonczewski[3] and Berger[4] predicted that a large spin-polarised currentcould transfer spin-angular momentum and so exert a spin transfer torque (STT)sufficient to switch thin FM<missing VAR> layers between stable magnetisation states[5] and,for even higher current densities, drive continuous precession which emitsmicrowaves[6].
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 2007, 'Nobel', 2]

S
###Non-equilibrium magnetism in dual spin valves|A. Aziz,O. P. Wessely,M. Ali,D. M. Edwards,C. H. Marrows,B. J. Hickey,M. G. Blamire###
(1390175, 1390175)
 In 1996Slonczewski[3] and Berger[4] predicted that a large spin-polarised currentcould transfer spin-angular momentum and so exert a spin transfer torque (STT)sufficient to switch thin FM<missing VAR> layers between stable magnetisation states[5] and,for even higher current densities, drive continuous precession which emitsmicrowaves[6].
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 2007, 'Nobel', 2]

F
###Non-equilibrium magnetism in dual spin valves|A. Aziz,O. P. Wessely,M. Ali,D. M. Edwards,C. H. Marrows,B. J. Hickey,M. G. Blamire###
(1390189, 1390189)
 In 1996Slonczewski[3] and Berger[4] predicted that a large spin-polarised currentcould transfer spin-angular momentum and so exert a spin transfer torque (STT)sufficient to switch thin FM<missing VAR> layers between stable magnetisation states[5] and,for even higher current densities, drive continuous precession which emitsmicrowaves[6].
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 2007, 'Nobel', 2]

F
###Non-equilibrium magnetism in dual spin valves|A. Aziz,O. P. Wessely,M. Ali,D. M. Edwards,C. H. Marrows,B. J. Hickey,M. G. Blamire###
(1390277, 1390277)
 Thus, while GMR is a purely passive phenomenon which ultimatelydepends on the intrinsic band structure of the FM<missing VAR>, STT adds an active elementto spintronics by which the direction of the magnetisation may be manipulated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[267.0, 2007, 'Nobel', 3]

S
###Non-equilibrium magnetism in dual spin valves|A. Aziz,O. P. Wessely,M. Ali,D. M. Edwards,C. H. Marrows,B. J. Hickey,M. G. Blamire###
(1390281, 1390281)
 Thus, while GMR is a purely passive phenomenon which ultimatelydepends on the intrinsic band structure of the FM<missing VAR>, STT adds an active elementto spintronics by which the direction of the magnetisation may be manipulated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[271.0, 2007, 'Nobel', 3]

F
###Non-equilibrium magnetism in dual spin valves|A. Aziz,O. P. Wessely,M. Ali,D. M. Edwards,C. H. Marrows,B. J. Hickey,M. G. Blamire###
(1390367, 1390367)
Here we show that highly non-equilibrium spin injection can modify thescattering asymmetry and, by extension, the intrinsic magnetism of a FM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[357.0, 2007, 'Nobel', 4]

S
###Non-equilibrium magnetism in dual spin valves|A. Aziz,O. P. Wessely,M. Ali,D. M. Edwards,C. H. Marrows,B. J. Hickey,M. G. Blamire###
(1390384, 1390384)
 Thisphenomenon is completely different to STT and provides a third ingredient whichshould further expand the range of opportunities for the application ofspintronics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[374.0, 2007, 'Nobel', 5]

Nd(O0.7F0.3)FeAs
###Upper critical fields and thermally-activated transport of Nd(O_0.7F_0.3)FeAs single crystal|J. Jaroszynski,F. Hunte,L. Balicas,Youn-jung Jo,I. Raicevic,A. Gurevich,D. C. Larbalestier,F. F. Balakirev,L. Fang,P. Cheng,Y. Jia,H. H. Wen###
(1390451, 1390459)
Upper critical fields and thermally-activated transport of Nd(O0.7F0.3)FeAs single crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0.175,0.075,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 45, 'T', 1],[72.0, 60, 'T', 1],[260.0, 9.2, 'at', 6],[261.0, 44, 'K', 6],[264.0, 5, 'at', 6],[265.0, 34, 'K', 6],[440.0, 2, ',', 10]

H
###Upper critical fields and thermally-activated transport of Nd(O_0.7F_0.3)FeAs single crystal|J. Jaroszynski,F. Hunte,L. Balicas,Youn-jung Jo,I. Raicevic,A. Gurevich,D. C. Larbalestier,F. F. Balakirev,L. Fang,P. Cheng,Y. Jia,H. H. Wen###
(1390488, 1390488)
 We present measurements of the resistivity and the upper critical field Hc<missing VAR>2of Nd(O0.7F0.3)FeAs single crystals in strong D<missing VAR>C and pulsed magnetic fieldsup to 45 T and 60 T, respectively.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 45, 'T', 0],[43.0, 60, 'T', 0],[231.0, 9.2, 'at', 5],[232.0, 44, 'K', 5],[235.0, 5, 'at', 5],[236.0, 34, 'K', 5],[411.0, 2, ',', 9]

Nd(O0.7F0.3)FeAs
###Upper critical fields and thermally-activated transport of Nd(O_0.7F_0.3)FeAs single crystal|J. Jaroszynski,F. Hunte,L. Balicas,Youn-jung Jo,I. Raicevic,A. Gurevich,D. C. Larbalestier,F. F. Balakirev,L. Fang,P. Cheng,Y. Jia,H. H. Wen###
(1390495, 1390503)
 We present measurements of the resistivity and the upper critical field Hc<missing VAR>2of Nd(O0.7F0.3)FeAs single crystals in strong D<missing VAR>C and pulsed magnetic fieldsup to 45 T and 60 T, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0.175,0.075,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 45, 'T', 0],[28.0, 60, 'T', 0],[216.0, 9.2, 'at', 5],[217.0, 44, 'K', 5],[220.0, 5, 'at', 5],[221.0, 34, 'K', 5],[396.0, 2, ',', 9]

C
###Upper critical fields and thermally-activated transport of Nd(O_0.7F_0.3)FeAs single crystal|J. Jaroszynski,F. Hunte,L. Balicas,Youn-jung Jo,I. Raicevic,A. Gurevich,D. C. Larbalestier,F. F. Balakirev,L. Fang,P. Cheng,Y. Jia,H. H. Wen###
(1390514, 1390514)
 We present measurements of the resistivity and the upper critical field Hc<missing VAR>2of Nd(O0.7F0.3)FeAs single crystals in strong D<missing VAR>C and pulsed magnetic fieldsup to 45 T and 60 T, respectively.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 45, 'T', 0],[17.0, 60, 'T', 0],[205.0, 9.2, 'at', 5],[206.0, 44, 'K', 5],[209.0, 5, 'at', 5],[210.0, 34, 'K', 5],[385.0, 2, ',', 9]

H
###Upper critical fields and thermally-activated transport of Nd(O_0.7F_0.3)FeAs single crystal|J. Jaroszynski,F. Hunte,L. Balicas,Youn-jung Jo,I. Raicevic,A. Gurevich,D. C. Larbalestier,F. F. Balakirev,L. Fang,P. Cheng,Y. Jia,H. H. Wen###
(1390551, 1390551)
 We found that the field scale of Hc<missing VAR>2 iscomparable to 100 T<missing VAR> of high Tc cuprates.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 45, 'T', 1],[20.0, 60, 'T', 1],[168.0, 9.2, 'at', 4],[169.0, 44, 'K', 4],[172.0, 5, 'at', 4],[173.0, 34, 'K', 4],[348.0, 2, ',', 8]

H
###Upper critical fields and thermally-activated transport of Nd(O_0.7F_0.3)FeAs single crystal|J. Jaroszynski,F. Hunte,L. Balicas,Youn-jung Jo,I. Raicevic,A. Gurevich,D. C. Larbalestier,F. F. Balakirev,L. Fang,P. Cheng,Y. Jia,H. H. Wen###
(1390576, 1390576)
 Hc<missing VAR>2(T) parallel to the c<missing VAR>-axisexhibits a pronounced upward curvature similar to what was extracted fromearlier measurements on polycrystalline samples.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 45, 'T', 2],[45.0, 60, 'T', 2],[143.0, 9.2, 'at', 3],[144.0, 44, 'K', 3],[147.0, 5, 'at', 3],[148.0, 34, 'K', 3],[323.0, 2, ',', 7]

H
###Upper critical fields and thermally-activated transport of Nd(O_0.7F_0.3)FeAs single crystal|J. Jaroszynski,F. Hunte,L. Balicas,Youn-jung Jo,I. Raicevic,A. Gurevich,D. C. Larbalestier,F. F. Balakirev,L. Fang,P. Cheng,Y. Jia,H. H. Wen###
(1390678, 1390678)
 The orientational dependence of Hc<missing VAR>2 showsdeviations from the one-band Ginzburg-Landau scaling.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 45, 'T', 4],[147.0, 60, 'T', 4],[41.0, 9.2, 'at', 1],[42.0, 44, 'K', 1],[45.0, 5, 'at', 1],[46.0, 34, 'K', 1],[221.0, 2, ',', 5]

H
###Upper critical fields and thermally-activated transport of Nd(O_0.7F_0.3)FeAs single crystal|J. Jaroszynski,F. Hunte,L. Balicas,Youn-jung Jo,I. Raicevic,A. Gurevich,D. C. Larbalestier,F. F. Balakirev,L. Fang,P. Cheng,Y. Jia,H. H. Wen###
(1390852, 1390852)
 The activationenergy has very different field dependencies for Hab and Hperp ab.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[324.0, 45, 'T', 8],[321.0, 60, 'T', 8],[133.0, 9.2, 'at', 3],[132.0, 44, 'K', 3],[129.0, 5, 'at', 3],[128.0, 34, 'K', 3],[47.0, 2, ',', 1]

H
###Upper critical fields and thermally-activated transport of Nd(O_0.7F_0.3)FeAs single crystal|J. Jaroszynski,F. Hunte,L. Balicas,Youn-jung Jo,I. Raicevic,A. Gurevich,D. C. Larbalestier,F. F. Balakirev,L. Fang,P. Cheng,Y. Jia,H. H. Wen###
(1390857, 1390857)
 The activationenergy has very different field dependencies for Hab and Hperp ab.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[329.0, 45, 'T', 8],[326.0, 60, 'T', 8],[138.0, 9.2, 'at', 3],[137.0, 44, 'K', 3],[134.0, 5, 'at', 3],[133.0, 34, 'K', 3],[42.0, 2, ',', 1]

H
###Upper critical fields and thermally-activated transport of Nd(O_0.7F_0.3)FeAs single crystal|J. Jaroszynski,F. Hunte,L. Balicas,Youn-jung Jo,I. Raicevic,A. Gurevich,D. C. Larbalestier,F. F. Balakirev,L. Fang,P. Cheng,Y. Jia,H. H. Wen###
(1390897, 1390897)
 Wediscuss to what extent different pairing scenarios can manifest themselves inthe observed behavior of Hc<missing VAR>2, using the two-band model of superconductivity.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[369.0, 45, 'T', 9],[366.0, 60, 'T', 9],[178.0, 9.2, 'at', 4],[177.0, 44, 'K', 4],[174.0, 5, 'at', 4],[173.0, 34, 'K', 4],[2.0, 2, ',', 0]

H
###Upper critical fields and thermally-activated transport of Nd(O_0.7F_0.3)FeAs single crystal|J. Jaroszynski,F. Hunte,L. Balicas,Youn-jung Jo,I. Raicevic,A. Gurevich,D. C. Larbalestier,F. F. Balakirev,L. Fang,P. Cheng,Y. Jia,H. H. Wen###
(1390936, 1390936)
The results indicate the importance of paramagnetic effects on Hc<missing VAR>2(T),whichmay significantly reduce Hc<missing VAR>2(0) as compared toHc<missing VAR>2(0)200-300 T<missing VAR> based onextrapolations of Hc<missing VAR>2(T) near Tc down to low temperatures.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[408.0, 45, 'T', 10],[405.0, 60, 'T', 10],[217.0, 9.2, 'at', 5],[216.0, 44, 'K', 5],[213.0, 5, 'at', 5],[212.0, 34, 'K', 5],[37.0, 2, ',', 1]

H
###Upper critical fields and thermally-activated transport of Nd(O_0.7F_0.3)FeAs single crystal|J. Jaroszynski,F. Hunte,L. Balicas,Youn-jung Jo,I. Raicevic,A. Gurevich,D. C. Larbalestier,F. F. Balakirev,L. Fang,P. Cheng,Y. Jia,H. H. Wen###
(1390952, 1390952)
The results indicate the importance of paramagnetic effects on Hc<missing VAR>2(T),whichmay significantly reduce Hc<missing VAR>2(0) as compared toHc<missing VAR>2(0)200-300 T<missing VAR> based onextrapolations of Hc<missing VAR>2(T) near Tc down to low temperatures.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[424.0, 45, 'T', 10],[421.0, 60, 'T', 10],[233.0, 9.2, 'at', 5],[232.0, 44, 'K', 5],[229.0, 5, 'at', 5],[228.0, 34, 'K', 5],[53.0, 2, ',', 1]

H
###Upper critical fields and thermally-activated transport of Nd(O_0.7F_0.3)FeAs single crystal|J. Jaroszynski,F. Hunte,L. Balicas,Youn-jung Jo,I. Raicevic,A. Gurevich,D. C. Larbalestier,F. F. Balakirev,L. Fang,P. Cheng,Y. Jia,H. H. Wen###
(1390964, 1390964)
The results indicate the importance of paramagnetic effects on Hc<missing VAR>2(T),whichmay significantly reduce Hc<missing VAR>2(0) as compared toHc<missing VAR>2(0)200-300 T<missing VAR> based onextrapolations of Hc<missing VAR>2(T) near Tc down to low temperatures.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[436.0, 45, 'T', 10],[433.0, 60, 'T', 10],[245.0, 9.2, 'at', 5],[244.0, 44, 'K', 5],[241.0, 5, 'at', 5],[240.0, 34, 'K', 5],[65.0, 2, ',', 1]

H
###Upper critical fields and thermally-activated transport of Nd(O_0.7F_0.3)FeAs single crystal|J. Jaroszynski,F. Hunte,L. Balicas,Youn-jung Jo,I. Raicevic,A. Gurevich,D. C. Larbalestier,F. F. Balakirev,L. Fang,P. Cheng,Y. Jia,H. H. Wen###
(1390985, 1390985)
The results indicate the importance of paramagnetic effects on Hc<missing VAR>2(T),whichmay significantly reduce Hc<missing VAR>2(0) as compared toHc<missing VAR>2(0)200-300 T<missing VAR> based onextrapolations of Hc<missing VAR>2(T) near Tc down to low temperatures.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[457.0, 45, 'T', 10],[454.0, 60, 'T', 10],[266.0, 9.2, 'at', 5],[265.0, 44, 'K', 5],[262.0, 5, 'at', 5],[261.0, 34, 'K', 5],[86.0, 2, ',', 1]

SrFeAsF
###SrFeAsF as a parent compound for iron pnictide superconductors|Fei Han,Xiyu Zhu,Gang Mu,Peng Cheng,Hai-Hu Wen###
(1391014, 1391017)
SrFeAsF as a parent compound for iron pnictide superconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 173, 'K', 2]

SrFeAsF
###SrFeAsF as a parent compound for iron pnictide superconductors|Fei Han,Xiyu Zhu,Gang Mu,Peng Cheng,Hai-Hu Wen###
(1391050, 1391053)
 We have successfully synthesized the fluo-arsenide SrFeAsF, a new parentphase with the ZrCuAsSi structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 173, 'K', 1]

ZrCuAsSi
###SrFeAsF as a parent compound for iron pnictide superconductors|Fei Han,Xiyu Zhu,Gang Mu,Peng Cheng,Hai-Hu Wen###
(1391069, 1391072)
 We have successfully synthesized the fluo-arsenide SrFeAsF, a new parentphase with the ZrCuAsSi structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 173, 'K', 1]

S
###SrFeAsF as a parent compound for iron pnictide superconductors|Fei Han,Xiyu Zhu,Gang Mu,Peng Cheng,Hai-Hu Wen###
(1391136, 1391136)
 The temperature dependence of resistivityand dc magnetization both reveal an anomaly at about T<missing VAR>an  173 K, which maycorrespond to the structural and/or Spin-Density-Wave (SD<missing VAR>W) transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 173, 'K', 0]

W
###SrFeAsF as a parent compound for iron pnictide superconductors|Fei Han,Xiyu Zhu,Gang Mu,Peng Cheng,Hai-Hu Wen###
(1391138, 1391138)
 The temperature dependence of resistivityand dc magnetization both reveal an anomaly at about T<missing VAR>an  173 K, which maycorrespond to the structural and/or Spin-Density-Wave (SD<missing VAR>W) transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 173, 'K', 0]

H
###SrFeAsF as a parent compound for iron pnictide superconductors|Fei Han,Xiyu Zhu,Gang Mu,Peng Cheng,Hai-Hu Wen###
(1391176, 1391176)
 Interestingly,the Hall coefficient R<missing VAR>H is positive below T<missing VAR>an, which is opposite to thecases in the two parent phases of FeAs-based systems known so far, i.e.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 173, 'K', 2]

FeAs
###SrFeAsF as a parent compound for iron pnictide superconductors|Fei Han,Xiyu Zhu,Gang Mu,Peng Cheng,Hai-Hu Wen###
(1391213, 1391214)
 Interestingly,the Hall coefficient R<missing VAR>H is positive below T<missing VAR>an, which is opposite to thecases in the two parent phases of FeAs-based systems known so far, i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 173, 'K', 2]

FeAsO
###SrFeAsF as a parent compound for iron pnictide superconductors|Fei Han,Xiyu Zhu,Gang Mu,Peng Cheng,Hai-Hu Wen###
(1391235, 1391237)
,LnFeAsO (Ln  rare earth elements) and (Ba, Sr)Fe2As2 where the Hallcoefficient R<missing VAR>H is negative.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 173, 'K', 3]

Ba
###SrFeAsF as a parent compound for iron pnictide superconductors|Fei Han,Xiyu Zhu,Gang Mu,Peng Cheng,Hai-Hu Wen###
(1391253, 1391253)
,LnFeAsO (Ln  rare earth elements) and (Ba, Sr)Fe2As2 where the Hallcoefficient R<missing VAR>H is negative.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 173, 'K', 3]

Sr
###SrFeAsF as a parent compound for iron pnictide superconductors|Fei Han,Xiyu Zhu,Gang Mu,Peng Cheng,Hai-Hu Wen###
(1391256, 1391256)
,LnFeAsO (Ln  rare earth elements) and (Ba, Sr)Fe2As2 where the Hallcoefficient R<missing VAR>H is negative.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 173, 'K', 3]

Fe2As2
###SrFeAsF as a parent compound for iron pnictide superconductors|Fei Han,Xiyu Zhu,Gang Mu,Peng Cheng,Hai-Hu Wen###
(1391258, 1391261)
,LnFeAsO (Ln  rare earth elements) and (Ba, Sr)Fe2As2 where the Hallcoefficient R<missing VAR>H is negative.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 173, 'K', 3]

H
###SrFeAsF as a parent compound for iron pnictide superconductors|Fei Han,Xiyu Zhu,Gang Mu,Peng Cheng,Hai-Hu Wen###
(1391273, 1391273)
,LnFeAsO (Ln  rare earth elements) and (Ba, Sr)Fe2As2 where the Hallcoefficient R<missing VAR>H is negative.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 173, 'K', 3]

S
###SrFeAsF as a parent compound for iron pnictide superconductors|Fei Han,Xiyu Zhu,Gang Mu,Peng Cheng,Hai-Hu Wen###
(1391307, 1391307)
 This strongly suggests that the gapping to theFermi surfaces induced by the SD<missing VAR>W order is more complex than we believed beforethat it removes the density of states on some Fermi pockets and leaves one ofthe electron pockets less-gapped or un-gapped.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[198.0, 173, 'K', 4]

W
###SrFeAsF as a parent compound for iron pnictide superconductors|Fei Han,Xiyu Zhu,Gang Mu,Peng Cheng,Hai-Hu Wen###
(1391309, 1391309)
 This strongly suggests that the gapping to theFermi surfaces induced by the SD<missing VAR>W order is more complex than we believed beforethat it removes the density of states on some Fermi pockets and leaves one ofthe electron pockets less-gapped or un-gapped.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[200.0, 173, 'K', 4]

C
###Phase separation of electrons strongly coupled with phonons in cuprates and manganites|A. S. Alexandrov###
(1391529, 1391529)
 We argue that microscopic phase separations in cupratesuperconductors and colossal magnetoresistance (CMR) manganites originate froma strong electron-phonon interaction (E<missing VAR>PI) combined with unavoidable disorder.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Phase separation of electrons strongly coupled with phonons in cuprates and manganites|A. S. Alexandrov###
(1391554, 1391554)
 We argue that microscopic phase separations in cupratesuperconductors and colossal magnetoresistance (CMR) manganites originate froma strong electron-phonon interaction (E<missing VAR>PI) combined with unavoidable disorder.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PI
###Phase separation of electrons strongly coupled with phonons in cuprates and manganites|A. S. Alexandrov###
(1391585, 1391586)
Attractive electron correlations, caused by an almost unretarded E<missing VAR>PI, aresufficient to overcome the direct inter-site Coulomb repulsion in thesecharge-transfer Mott-Hubbard insulators, so that low energy physics is that ofsmall polarons and small bipolarons (real-space electron (hole) pairs dressedby phonons).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Phase separation of electrons strongly coupled with phonons in cuprates and manganites|A. S. Alexandrov###
(1391718, 1391718)
 I identify theFroehlich finite-range E<missing VAR>PI with optical phonons as the most essential forpairing and phase separation in superconducting layered cuprates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PI
###Phase separation of electrons strongly coupled with phonons in cuprates and manganites|A. S. Alexandrov###
(1391732, 1391733)
 I identify theFroehlich finite-range E<missing VAR>PI with optical phonons as the most essential forpairing and phase separation in superconducting layered cuprates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CC
###Phase separation of electrons strongly coupled with phonons in cuprates and manganites|A. S. Alexandrov###
(1391805, 1391806)
 The pairingof oxygen holes into heavy bipolarons in the paramagnetic phase(current-carrier density collapse (CCD<missing VAR>C)) explains also CMR of doped manganitesdue to magnetic break-up of bipolarons in the ferromagnetic phase.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Phase separation of electrons strongly coupled with phonons in cuprates and manganites|A. S. Alexandrov###
(1391808, 1391808)
 The pairingof oxygen holes into heavy bipolarons in the paramagnetic phase(current-carrier density collapse (CCD<missing VAR>C)) explains also CMR of doped manganitesdue to magnetic break-up of bipolarons in the ferromagnetic phase.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Phase separation of electrons strongly coupled with phonons in cuprates and manganites|A. S. Alexandrov###
(1391816, 1391816)
 The pairingof oxygen holes into heavy bipolarons in the paramagnetic phase(current-carrier density collapse (CCD<missing VAR>C)) explains also CMR of doped manganitesdue to magnetic break-up of bipolarons in the ferromagnetic phase.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Phase separation of electrons strongly coupled with phonons in cuprates and manganites|A. S. Alexandrov###
(1391852, 1391852)
 Here Ibriefly present an explanation of high and low-resistance phase coexistencenear the ferromagnetic transition as a mixture of polaronic ferromagnetic andbipolaronic paramagnetic domains due to unavoidable disorder in dopedmanganites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magnetoresistance in paramagnetic heavy fermion metals|D. Parihari,N. S. Vidhyadhiraja###
(1392275, 1392275)
 In the Kondolattice regime, the theoretically computed magnetoresistance is found to benegative in the entire temperature range.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 0, ',', 1]

CeB6
###Magnetoresistance in paramagnetic heavy fermion metals|D. Parihari,N. S. Vidhyadhiraja###
(1392442, 1392444)
 Direct comparison of the theoreticalresults to the field dependent resistivity measurements in CeB6 yields goodagreement.
Featurization terminated normally.
0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[235.0, 0, ',', 4]

CrO2
###Transport and magnetotransport properties of cold-pressed CrO$_2$ powder, prepared by hydrothermal synthesis|B. I. Belevtsev,N. V. Dalakova,M. G. Osmolowsky,E. Yu. Beliayev,A. A. Selutin###
(1392476, 1392478)
Transport and magnetotransport properties of cold-pressed CrO2 powder, prepared by hydrothermal synthesis.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 120, 'nm', 2],[128.0, 385, 'K', 4],[181.0, 1.6, 'T', 4],[251.0, -17, '%', 6],[264.0, -20, '%', 6],[297.0, 0.3, '%', 7],[379.0, 40, 'K', 9]

CrO2
###Transport and magnetotransport properties of cold-pressed CrO$_2$ powder, prepared by hydrothermal synthesis|B. I. Belevtsev,N. V. Dalakova,M. G. Osmolowsky,E. Yu. Beliayev,A. A. Selutin###
(1392498, 1392500)
 Submicron powder of CrO2 was prepared by hydrothermal synthesis methodfrom chromium trioxide.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 120, 'nm', 1],[106.0, 385, 'K', 3],[159.0, 1.6, 'T', 3],[229.0, -17, '%', 5],[242.0, -20, '%', 5],[275.0, 0.3, '%', 6],[357.0, 40, 'K', 8]

H
###Transport and magnetotransport properties of cold-pressed CrO$_2$ powder, prepared by hydrothermal synthesis|B. I. Belevtsev,N. V. Dalakova,M. G. Osmolowsky,E. Yu. Beliayev,A. A. Selutin###
(1392568, 1392568)
 The powder (stabilized with thin surface layer ofbeta-CrOOH) has been characterized by structural, X<missing VAR>-ray and magneticmeasurements.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 120, 'nm', 1],[38.0, 385, 'K', 1],[91.0, 1.6, 'T', 1],[161.0, -17, '%', 3],[174.0, -20, '%', 3],[207.0, 0.3, '%', 4],[289.0, 40, 'K', 6]

K
###Transport and magnetotransport properties of cold-pressed CrO$_2$ powder, prepared by hydrothermal synthesis|B. I. Belevtsev,N. V. Dalakova,M. G. Osmolowsky,E. Yu. Beliayev,A. A. Selutin###
(1392648, 1392648)
 The powder (with Curie temperature about 385 K) was cold-pressedand its transport and magnetotransport properties have been measured in thetemperature range 4--450 K in magnetic field up to 1.6 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 120, 'nm', 2],[42.0, 385, 'K', 0],[11.0, 1.6, 'T', 0],[81.0, -17, '%', 2],[94.0, -20, '%', 2],[127.0, 0.3, '%', 3],[209.0, 40, 'K', 5]

At
###Transport and magnetotransport properties of cold-pressed CrO$_2$ powder, prepared by hydrothermal synthesis|B. I. Belevtsev,N. V. Dalakova,M. G. Osmolowsky,E. Yu. Beliayev,A. A. Selutin###
(1392710, 1392710)
 At T<missing VAR>5 K the MRmagnitude has been -17% at H0.3 T<missing VAR> and -20% at H1.4 T<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[168.0, 120, 'nm', 4],[104.0, 385, 'K', 2],[51.0, 1.6, 'T', 2],[19.0, -17, '%', 0],[32.0, -20, '%', 0],[65.0, 0.3, '%', 1],[147.0, 40, 'K', 3]

K
###Transport and magnetotransport properties of cold-pressed CrO$_2$ powder, prepared by hydrothermal synthesis|B. I. Belevtsev,N. V. Dalakova,M. G. Osmolowsky,E. Yu. Beliayev,A. A. Selutin###
(1392715, 1392715)
 At T<missing VAR>5 K the MRmagnitude has been -17% at H0.3 T<missing VAR> and -20% at H1.4 T<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 120, 'nm', 4],[109.0, 385, 'K', 2],[56.0, 1.6, 'T', 2],[14.0, -17, '%', 0],[27.0, -20, '%', 0],[60.0, 0.3, '%', 1],[142.0, 40, 'K', 3]

H0.3
###Transport and magnetotransport properties of cold-pressed CrO$_2$ powder, prepared by hydrothermal synthesis|B. I. Belevtsev,N. V. Dalakova,M. G. Osmolowsky,E. Yu. Beliayev,A. A. Selutin###
(1392735, 1392736)
 At T<missing VAR>5 K the MRmagnitude has been -17% at H0.3 T<missing VAR> and -20% at H1.4 T<missing VAR>.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[193.0, 120, 'nm', 4],[129.0, 385, 'K', 2],[76.0, 1.6, 'T', 2],[6.0, -17, '%', 0],[6.0, -20, '%', 0],[39.0, 0.3, '%', 1],[121.0, 40, 'K', 3]

H1.4
###Transport and magnetotransport properties of cold-pressed CrO$_2$ powder, prepared by hydrothermal synthesis|B. I. Belevtsev,N. V. Dalakova,M. G. Osmolowsky,E. Yu. Beliayev,A. A. Selutin###
(1392748, 1392749)
 At T<missing VAR>5 K the MRmagnitude has been -17% at H0.3 T<missing VAR> and -20% at H1.4 T<missing VAR>.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[206.0, 120, 'nm', 4],[142.0, 385, 'K', 2],[89.0, 1.6, 'T', 2],[19.0, -17, '%', 0],[6.0, -20, '%', 0],[26.0, 0.3, '%', 1],[108.0, 40, 'K', 3]

K
###Transport and magnetotransport properties of cold-pressed CrO$_2$ powder, prepared by hydrothermal synthesis|B. I. Belevtsev,N. V. Dalakova,M. G. Osmolowsky,E. Yu. Beliayev,A. A. Selutin###
(1392788, 1392788)
 Its magnitude decreasedfast with increase in temperature reducing to 0.3% and less for T<missing VAR>>200 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[246.0, 120, 'nm', 5],[182.0, 385, 'K', 3],[129.0, 1.6, 'T', 3],[59.0, -17, '%', 1],[46.0, -20, '%', 1],[13.0, 0.3, '%', 0],[69.0, 40, 'K', 2]

La
###Metal-insulator transition and electroresistance in lanthanum/calcium manganites La_<1-x>Ca_<x>MnO_<3> (x = 0-0.5) from voltage-current-temperature surfaces|J C Knott,D C Pond,R A Lewis###
(1392941, 1392941)
Metal-insulator transition and electroresistance in lanthanum/calcium manganites La<1-x<missing VAR>>Ca<x<missing VAR>>MnO<3> (x<missing VAR>  0-0.5) from voltage-current-temperature surfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 3, '>', 0],[47.0, 3, '>', 1]

Ca
###Metal-insulator transition and electroresistance in lanthanum/calcium manganites La_<1-x>Ca_<x>MnO_<3> (x = 0-0.5) from voltage-current-temperature surfaces|J C Knott,D C Pond,R A Lewis###
(1392947, 1392947)
Metal-insulator transition and electroresistance in lanthanum/calcium manganites La<1-x<missing VAR>>Ca<x<missing VAR>>MnO<3> (x<missing VAR>  0-0.5) from voltage-current-temperature surfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 3, '>', 0],[41.0, 3, '>', 1]

MnO
###Metal-insulator transition and electroresistance in lanthanum/calcium manganites La_<1-x>Ca_<x>MnO_<3> (x = 0-0.5) from voltage-current-temperature surfaces|J C Knott,D C Pond,R A Lewis###
(1392951, 1392952)
Metal-insulator transition and electroresistance in lanthanum/calcium manganites La<1-x<missing VAR>>Ca<x<missing VAR>>MnO<3> (x<missing VAR>  0-0.5) from voltage-current-temperature surfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 3, '>', 0],[36.0, 3, '>', 1]

B
###Metal-insulator transition and electroresistance in lanthanum/calcium manganites La_<1-x>Ca_<x>MnO_<3> (x = 0-0.5) from voltage-current-temperature surfaces|J C Knott,D C Pond,R A Lewis###
(1392985, 1392985)
 Of the perovskites, ABX<missing VAR><3>, a subset of special interest is the family inwhich the A site is occupied by a lanthanide ion, the B site by a rare earthand X<missing VAR> is oxygen, as such materials often exhibit a large change in electricalresistance in a magnetic field, a phenomenon known as colossalmagnetoresistance (MR).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 3, '>', 1],[3.0, 3, '>', 0]

B
###Metal-insulator transition and electroresistance in lanthanum/calcium manganites La_<1-x>Ca_<x>MnO_<3> (x = 0-0.5) from voltage-current-temperature surfaces|J C Knott,D C Pond,R A Lewis###
(1393034, 1393034)
 Of the perovskites, ABX<missing VAR><3>, a subset of special interest is the family inwhich the A site is occupied by a lanthanide ion, the B site by a rare earthand X<missing VAR> is oxygen, as such materials often exhibit a large change in electricalresistance in a magnetic field, a phenomenon known as colossalmagnetoresistance (MR).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 3, '>', 1],[46.0, 3, '>', 0]

K
###Metal-insulator transition and electroresistance in lanthanum/calcium manganites La_<1-x>Ca_<x>MnO_<3> (x = 0-0.5) from voltage-current-temperature surfaces|J C Knott,D C Pond,R A Lewis###
(1393349, 1393349)
 We accomplish this by measuringvoltage-current curves over a wide temperature range (10-300 K) allowing us tobuild up an experimental voltage surface over current-temperature axes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[395.0, 3, '>', 7],[361.0, 3, '>', 6]

P
###Metal-insulator transition and electroresistance in lanthanum/calcium manganites La_<1-x>Ca_<x>MnO_<3> (x = 0-0.5) from voltage-current-temperature surfaces|J C Knott,D C Pond,R A Lewis###
(1393480, 1393480)
 This approach provides additionalinsight into the phenomena of electrical transport in the lanthanum/calciummanganites, in particular the close connection of the maximum ER to theoccurrence of the MIT in those cases of a paramagnetic insulator (PM<missing VAR>I) toferromagnetic metal (FMM) transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[526.0, 3, '>', 9],[492.0, 3, '>', 8]

I
###Metal-insulator transition and electroresistance in lanthanum/calcium manganites La_<1-x>Ca_<x>MnO_<3> (x = 0-0.5) from voltage-current-temperature surfaces|J C Knott,D C Pond,R A Lewis###
(1393482, 1393482)
 This approach provides additionalinsight into the phenomena of electrical transport in the lanthanum/calciummanganites, in particular the close connection of the maximum ER to theoccurrence of the MIT in those cases of a paramagnetic insulator (PM<missing VAR>I) toferromagnetic metal (FMM) transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[528.0, 3, '>', 9],[494.0, 3, '>', 8]

F
###Metal-insulator transition and electroresistance in lanthanum/calcium manganites La_<1-x>Ca_<x>MnO_<3> (x = 0-0.5) from voltage-current-temperature surfaces|J C Knott,D C Pond,R A Lewis###
(1393493, 1393493)
 This approach provides additionalinsight into the phenomena of electrical transport in the lanthanum/calciummanganites, in particular the close connection of the maximum ER to theoccurrence of the MIT in those cases of a paramagnetic insulator (PM<missing VAR>I) toferromagnetic metal (FMM) transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[539.0, 3, '>', 9],[505.0, 3, '>', 8]

In2Se3
###Nanoscale Electronic Inhomogeneity in In2Se3 Nanoribbons Revealed by Microwave Impedance Microscopy|Keji Lai,Hailin Peng,Worasom Kundhikanjana,David T. Schoen,Chong Xie,Stefan Meister,Yi Cui,Michael A. Kelly,Zhi-Xun Shen###
(1393517, 1393520)
Nanoscale Electronic Inhomogeneity in In2Se3 Nanoribbons Revealed by Microwave Impedance Microscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[303.0, 100, 'nm', 5]

As
###Nanoscale Electronic Inhomogeneity in In2Se3 Nanoribbons Revealed by Microwave Impedance Microscopy|Keji Lai,Hailin Peng,Worasom Kundhikanjana,David T. Schoen,Chong Xie,Stefan Meister,Yi Cui,Michael A. Kelly,Zhi-Xun Shen###
(1393602, 1393602)
 As vividly demonstrated incomplex metal oxides and chalcogenides, these microscopic phases are of greatscientific and technological importance for research in high-temperaturesuperconductors, colossal magnetoresistance effect, phase-change memories, anddomain switching operations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[221.0, 100, 'nm', 3]

(In2Se3)
###Nanoscale Electronic Inhomogeneity in In2Se3 Nanoribbons Revealed by Microwave Impedance Microscopy|Keji Lai,Hailin Peng,Worasom Kundhikanjana,David T. Schoen,Chong Xie,Stefan Meister,Yi Cui,Michael A. Kelly,Zhi-Xun Shen###
(1393748, 1393753)
 Here, we report the observation of electronic inhomogeneity inindium selenide (In2Se3) nanoribbons by near-field scanning microwave impedancemicroscopy.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 100, 'nm', 1]

In2Se3
###Nanoscale Electronic Inhomogeneity in In2Se3 Nanoribbons Revealed by Microwave Impedance Microscopy|Keji Lai,Hailin Peng,Worasom Kundhikanjana,David T. Schoen,Chong Xie,Stefan Meister,Yi Cui,Michael A. Kelly,Zhi-Xun Shen###
(1393909, 1393912)
 Finally, thephase change memory function in In2Se3 nanoribbon devices can be locallyrecorded with big signal of opposite signs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 100, 'nm', 2]

CoGa8
###Thermal and Transport Behavior of Single Crystalline R2CoGa8 (R = Gd, Tb, Dy, Ho, Er, Tm, Lu and Y) Compounds|Devang A. Joshi,A. K. Nigam,S. K. Dhar,A. Thamizhavel###
(1393964, 1393966)
Thermal and Transport Behavior of Single Crystalline R<missing VAR>2CoGa8 (R<missing VAR>  Gd, Tb, Dy, Ho, Er, Tm, Lu and Y) Compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1111111111111111,0,0,0,0.8888888888888888,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[191.0, 30, 'K', 4]

Gd
###Thermal and Transport Behavior of Single Crystalline R2CoGa8 (R = Gd, Tb, Dy, Ho, Er, Tm, Lu and Y) Compounds|Devang A. Joshi,A. K. Nigam,S. K. Dhar,A. Thamizhavel###
(1393972, 1393972)
Thermal and Transport Behavior of Single Crystalline R<missing VAR>2CoGa8 (R<missing VAR>  Gd, Tb, Dy, Ho, Er, Tm, Lu and Y) Compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[185.0, 30, 'K', 4]

Tb
###Thermal and Transport Behavior of Single Crystalline R2CoGa8 (R = Gd, Tb, Dy, Ho, Er, Tm, Lu and Y) Compounds|Devang A. Joshi,A. K. Nigam,S. K. Dhar,A. Thamizhavel###
(1393975, 1393975)
Thermal and Transport Behavior of Single Crystalline R<missing VAR>2CoGa8 (R<missing VAR>  Gd, Tb, Dy, Ho, Er, Tm, Lu and Y) Compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[182.0, 30, 'K', 4]

Dy
###Thermal and Transport Behavior of Single Crystalline R2CoGa8 (R = Gd, Tb, Dy, Ho, Er, Tm, Lu and Y) Compounds|Devang A. Joshi,A. K. Nigam,S. K. Dhar,A. Thamizhavel###
(1393978, 1393978)
Thermal and Transport Behavior of Single Crystalline R<missing VAR>2CoGa8 (R<missing VAR>  Gd, Tb, Dy, Ho, Er, Tm, Lu and Y) Compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 30, 'K', 4]

Ho
###Thermal and Transport Behavior of Single Crystalline R2CoGa8 (R = Gd, Tb, Dy, Ho, Er, Tm, Lu and Y) Compounds|Devang A. Joshi,A. K. Nigam,S. K. Dhar,A. Thamizhavel###
(1393981, 1393981)
Thermal and Transport Behavior of Single Crystalline R<missing VAR>2CoGa8 (R<missing VAR>  Gd, Tb, Dy, Ho, Er, Tm, Lu and Y) Compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[176.0, 30, 'K', 4]

Er
###Thermal and Transport Behavior of Single Crystalline R2CoGa8 (R = Gd, Tb, Dy, Ho, Er, Tm, Lu and Y) Compounds|Devang A. Joshi,A. K. Nigam,S. K. Dhar,A. Thamizhavel###
(1393984, 1393984)
Thermal and Transport Behavior of Single Crystalline R<missing VAR>2CoGa8 (R<missing VAR>  Gd, Tb, Dy, Ho, Er, Tm, Lu and Y) Compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 30, 'K', 4]

Tm
###Thermal and Transport Behavior of Single Crystalline R2CoGa8 (R = Gd, Tb, Dy, Ho, Er, Tm, Lu and Y) Compounds|Devang A. Joshi,A. K. Nigam,S. K. Dhar,A. Thamizhavel###
(1393987, 1393987)
Thermal and Transport Behavior of Single Crystalline R<missing VAR>2CoGa8 (R<missing VAR>  Gd, Tb, Dy, Ho, Er, Tm, Lu and Y) Compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[170.0, 30, 'K', 4]

Lu
###Thermal and Transport Behavior of Single Crystalline R2CoGa8 (R = Gd, Tb, Dy, Ho, Er, Tm, Lu and Y) Compounds|Devang A. Joshi,A. K. Nigam,S. K. Dhar,A. Thamizhavel###
(1393990, 1393990)
Thermal and Transport Behavior of Single Crystalline R<missing VAR>2CoGa8 (R<missing VAR>  Gd, Tb, Dy, Ho, Er, Tm, Lu and Y) Compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 30, 'K', 4]

Y
###Thermal and Transport Behavior of Single Crystalline R2CoGa8 (R = Gd, Tb, Dy, Ho, Er, Tm, Lu and Y) Compounds|Devang A. Joshi,A. K. Nigam,S. K. Dhar,A. Thamizhavel###
(1393994, 1393994)
Thermal and Transport Behavior of Single Crystalline R<missing VAR>2CoGa8 (R<missing VAR>  Gd, Tb, Dy, Ho, Er, Tm, Lu and Y) Compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 30, 'K', 4]

CoGa8
###Thermal and Transport Behavior of Single Crystalline R2CoGa8 (R = Gd, Tb, Dy, Ho, Er, Tm, Lu and Y) Compounds|Devang A. Joshi,A. K. Nigam,S. K. Dhar,A. Thamizhavel###
(1394025, 1394027)
 The anisotropy in electrical transport and thermal behavior of singlecrystalline R<missing VAR>2CoGa8 series of compounds is presented.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1111111111111111,0,0,0,0.8888888888888888,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 30, 'K', 3]

P4
###Thermal and Transport Behavior of Single Crystalline R2CoGa8 (R = Gd, Tb, Dy, Ho, Er, Tm, Lu and Y) Compounds|Devang A. Joshi,A. K. Nigam,S. K. Dhar,A. Thamizhavel###
(1394061, 1394062)
 These compoundscrystallize in a tetragonal structure with space gropup P4/mmm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 30, 'K', 2]

Y2CoGa8
###Thermal and Transport Behavior of Single Crystalline R2CoGa8 (R = Gd, Tb, Dy, Ho, Er, Tm, Lu and Y) Compounds|Devang A. Joshi,A. K. Nigam,S. K. Dhar,A. Thamizhavel###
(1394082, 1394086)
 The nonmagneticcounterparts of the series namely Y2CoGa8 and Lu2CoGa8showa behavior consistent with the low density of states at the fermi level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.09090909090909091,0,0,0,0.7272727272727273,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 30, 'K', 1]

Lu2CoGa8
###Thermal and Transport Behavior of Single Crystalline R2CoGa8 (R = Gd, Tb, Dy, Ho, Er, Tm, Lu and Y) Compounds|Devang A. Joshi,A. K. Nigam,S. K. Dhar,A. Thamizhavel###
(1394090, 1394094)
 The nonmagneticcounterparts of the series namely Y2CoGa8 and Lu2CoGa8showa behavior consistent with the low density of states at the fermi level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.09090909090909091,0,0,0,0.7272727272727273,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 30, 'K', 1]

In
###Thermal and Transport Behavior of Single Crystalline R2CoGa8 (R = Gd, Tb, Dy, Ho, Er, Tm, Lu and Y) Compounds|Devang A. Joshi,A. K. Nigam,S. K. Dhar,A. Thamizhavel###
(1394125, 1394125)
 InY2CoGa8, a possibility of charge density wave transition is observedat approx 30 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 30, 'K', 0]

Y2CoGa8
###Thermal and Transport Behavior of Single Crystalline R2CoGa8 (R = Gd, Tb, Dy, Ho, Er, Tm, Lu and Y) Compounds|Devang A. Joshi,A. K. Nigam,S. K. Dhar,A. Thamizhavel###
(1394128, 1394132)
 InY2CoGa8, a possibility of charge density wave transition is observedat approx 30 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.09090909090909091,0,0,0,0.7272727272727273,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 30, 'K', 0]

Gd2CoGa8
###Thermal and Transport Behavior of Single Crystalline R2CoGa8 (R = Gd, Tb, Dy, Ho, Er, Tm, Lu and Y) Compounds|Devang A. Joshi,A. K. Nigam,S. K. Dhar,A. Thamizhavel###
(1394160, 1394164)
 Gd2CoGa8 and Er2CoGa8 show a presence ofshort range correlation above the magnetic ordering temperature of thecompound.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.09090909090909091,0,0,0,0.7272727272727273,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 30, 'K', 1]

Er2CoGa8
###Thermal and Transport Behavior of Single Crystalline R2CoGa8 (R = Gd, Tb, Dy, Ho, Er, Tm, Lu and Y) Compounds|Devang A. Joshi,A. K. Nigam,S. K. Dhar,A. Thamizhavel###
(1394168, 1394172)
 Gd2CoGa8 and Er2CoGa8 show a presence ofshort range correlation above the magnetic ordering temperature of thecompound.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.09090909090909091,0,0,0,0.7272727272727273,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 30, 'K', 1]

In
###Thermal and Transport Behavior of Single Crystalline R2CoGa8 (R = Gd, Tb, Dy, Ho, Er, Tm, Lu and Y) Compounds|Devang A. Joshi,A. K. Nigam,S. K. Dhar,A. Thamizhavel###
(1394207, 1394207)
 In case of Gd2CoGa8, the magnetoresistance exhibits asignificant anisotropy for current parallel to [100] and [001]directions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 30, 'K', 2]

Gd2CoGa8
###Thermal and Transport Behavior of Single Crystalline R2CoGa8 (R = Gd, Tb, Dy, Ho, Er, Tm, Lu and Y) Compounds|Devang A. Joshi,A. K. Nigam,S. K. Dhar,A. Thamizhavel###
(1394213, 1394217)
 In case of Gd2CoGa8, the magnetoresistance exhibits asignificant anisotropy for current parallel to [100] and [001]directions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.09090909090909091,0,0,0,0.7272727272727273,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 30, 'K', 2]

Tb
###Thermal and Transport Behavior of Single Crystalline R2CoGa8 (R = Gd, Tb, Dy, Ho, Er, Tm, Lu and Y) Compounds|Devang A. Joshi,A. K. Nigam,S. K. Dhar,A. Thamizhavel###
(1394271, 1394271)
 Compounds with other magnetic rare earths (R<missing VAR>  Tb, Dy, Ho and Tm)show the normal expected magnetic behavior whereas Dy2CoGa8 exhibitsthe possibility of charge density wave (CD<missing VAR>W) transition at approximately sametemperature as that of Y2CoGa8.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 30, 'K', 3]

Dy
###Thermal and Transport Behavior of Single Crystalline R2CoGa8 (R = Gd, Tb, Dy, Ho, Er, Tm, Lu and Y) Compounds|Devang A. Joshi,A. K. Nigam,S. K. Dhar,A. Thamizhavel###
(1394274, 1394274)
 Compounds with other magnetic rare earths (R<missing VAR>  Tb, Dy, Ho and Tm)show the normal expected magnetic behavior whereas Dy2CoGa8 exhibitsthe possibility of charge density wave (CD<missing VAR>W) transition at approximately sametemperature as that of Y2CoGa8.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 30, 'K', 3]

Ho
###Thermal and Transport Behavior of Single Crystalline R2CoGa8 (R = Gd, Tb, Dy, Ho, Er, Tm, Lu and Y) Compounds|Devang A. Joshi,A. K. Nigam,S. K. Dhar,A. Thamizhavel###
(1394277, 1394277)
 Compounds with other magnetic rare earths (R<missing VAR>  Tb, Dy, Ho and Tm)show the normal expected magnetic behavior whereas Dy2CoGa8 exhibitsthe possibility of charge density wave (CD<missing VAR>W) transition at approximately sametemperature as that of Y2CoGa8.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 30, 'K', 3]

Tm
###Thermal and Transport Behavior of Single Crystalline R2CoGa8 (R = Gd, Tb, Dy, Ho, Er, Tm, Lu and Y) Compounds|Devang A. Joshi,A. K. Nigam,S. K. Dhar,A. Thamizhavel###
(1394281, 1394281)
 Compounds with other magnetic rare earths (R<missing VAR>  Tb, Dy, Ho and Tm)show the normal expected magnetic behavior whereas Dy2CoGa8 exhibitsthe possibility of charge density wave (CD<missing VAR>W) transition at approximately sametemperature as that of Y2CoGa8.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 30, 'K', 3]

Dy2CoGa8
###Thermal and Transport Behavior of Single Crystalline R2CoGa8 (R = Gd, Tb, Dy, Ho, Er, Tm, Lu and Y) Compounds|Devang A. Joshi,A. K. Nigam,S. K. Dhar,A. Thamizhavel###
(1394299, 1394303)
 Compounds with other magnetic rare earths (R<missing VAR>  Tb, Dy, Ho and Tm)show the normal expected magnetic behavior whereas Dy2CoGa8 exhibitsthe possibility of charge density wave (CD<missing VAR>W) transition at approximately sametemperature as that of Y2CoGa8.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.09090909090909091,0,0,0,0.7272727272727273,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 30, 'K', 3]

C
###Thermal and Transport Behavior of Single Crystalline R2CoGa8 (R = Gd, Tb, Dy, Ho, Er, Tm, Lu and Y) Compounds|Devang A. Joshi,A. K. Nigam,S. K. Dhar,A. Thamizhavel###
(1394321, 1394321)
 Compounds with other magnetic rare earths (R<missing VAR>  Tb, Dy, Ho and Tm)show the normal expected magnetic behavior whereas Dy2CoGa8 exhibitsthe possibility of charge density wave (CD<missing VAR>W) transition at approximately sametemperature as that of Y2CoGa8.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 30, 'K', 3]

W
###Thermal and Transport Behavior of Single Crystalline R2CoGa8 (R = Gd, Tb, Dy, Ho, Er, Tm, Lu and Y) Compounds|Devang A. Joshi,A. K. Nigam,S. K. Dhar,A. Thamizhavel###
(1394323, 1394323)
 Compounds with other magnetic rare earths (R<missing VAR>  Tb, Dy, Ho and Tm)show the normal expected magnetic behavior whereas Dy2CoGa8 exhibitsthe possibility of charge density wave (CD<missing VAR>W) transition at approximately sametemperature as that of Y2CoGa8.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 30, 'K', 3]

Y2CoGa8
###Thermal and Transport Behavior of Single Crystalline R2CoGa8 (R = Gd, Tb, Dy, Ho, Er, Tm, Lu and Y) Compounds|Devang A. Joshi,A. K. Nigam,S. K. Dhar,A. Thamizhavel###
(1394343, 1394347)
 Compounds with other magnetic rare earths (R<missing VAR>  Tb, Dy, Ho and Tm)show the normal expected magnetic behavior whereas Dy2CoGa8 exhibitsthe possibility of charge density wave (CD<missing VAR>W) transition at approximately sametemperature as that of Y2CoGa8.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.09090909090909091,0,0,0,0.7272727272727273,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, 30, 'K', 3]

C
###Thermal and Transport Behavior of Single Crystalline R2CoGa8 (R = Gd, Tb, Dy, Ho, Er, Tm, Lu and Y) Compounds|Devang A. Joshi,A. K. Nigam,S. K. Dhar,A. Thamizhavel###
(1394382, 1394382)
 The thermal property of thesecompounds is analysed on the basis of crystalline electric field (CE<missing VAR>F)calculations.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[225.0, 30, 'K', 4]

F
###Thermal and Transport Behavior of Single Crystalline R2CoGa8 (R = Gd, Tb, Dy, Ho, Er, Tm, Lu and Y) Compounds|Devang A. Joshi,A. K. Nigam,S. K. Dhar,A. Thamizhavel###
(1394384, 1394384)
 The thermal property of thesecompounds is analysed on the basis of crystalline electric field (CE<missing VAR>F)calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[227.0, 30, 'K', 4]

InSb/InAlSb
###High field magneto-transport in high mobility gated InSb/InAlSb quantum well heterostructures|A. M. Gilbertson,W. R. Branford,M. Fearn,L. Buckle,P. D. Buckle,T. Ashley,L. F. Cohen###
(1394415, 1394420)
High field magneto-transport in high mobility gated InSb/InAlSb quantum well heterostructures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[30.0, 30, 'nm', 1],[69.0, 18.4, 'to', 2],[70.0, 39.5, 'm', 2],[93.0, 3.28, 'x', 2],[117.0, 6, 'm', 3]

InSb/InAlSb
###High field magneto-transport in high mobility gated InSb/InAlSb quantum well heterostructures|A. M. Gilbertson,W. R. Branford,M. Fearn,L. Buckle,P. D. Buckle,T. Ashley,L. F. Cohen###
(1394455, 1394460)
 We present high field magneto-transport data from a range of 30nm wideInSb/InAlSb quantum wells.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[5.0, 30, 'nm', 0],[29.0, 18.4, 'to', 1],[30.0, 39.5, 'm', 1],[53.0, 3.28, 'x', 1],[77.0, 6, 'm', 2]

V
###High field magneto-transport in high mobility gated InSb/InAlSb quantum well heterostructures|A. M. Gilbertson,W. R. Branford,M. Fearn,L. Buckle,P. D. Buckle,T. Ashley,L. F. Cohen###
(1394492, 1394492)
 The low temperature carrier mobility of the samplesstudied ranged from 18.4 to 39.5 m2V-1s<missing VAR>-1 with carrier densities between1.5x<missing VAR>1015 and 3.28x1015 m<missing VAR>-2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 30, 'nm', 1],[3.0, 18.4, 'to', 0],[2.0, 39.5, 'm', 0],[21.0, 3.28, 'x', 0],[45.0, 6, 'm', 1]

V
###High field magneto-transport in high mobility gated InSb/InAlSb quantum well heterostructures|A. M. Gilbertson,W. R. Branford,M. Fearn,L. Buckle,P. D. Buckle,T. Ashley,L. F. Cohen###
(1394539, 1394539)
 Room temperature mobilities are reported in excessof 6 m2V-1s<missing VAR>-1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 30, 'nm', 2],[50.0, 18.4, 'to', 1],[49.0, 39.5, 'm', 1],[26.0, 3.28, 'x', 1],[2.0, 6, 'm', 0]

In
###Anisotropic magnetoresistance of spin-orbit coupled carriers scattered from polarized magnetic impurities|Maxim Trushin,Karel Vyborny,Peter Moraczewski,Alexey A. Kovalev,John Schliemann,Tomas Jungwirth###
(1395022, 1395022)
 In this work wefocus on one realization of the AMR in which spin-orbit coupling enters viaspecific spin-textures on the carrier Fermi surfaces and ferromagnetism viaelastic scattering of carriers from polarized magnetic impurities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CeO0.9F0.1Fe1-xCo
###Strong electron-electron correlation and weak localization in CeO_{0.9}F_{0.1}Fe_{1-x}Co_xAs|S. J. Singh,J. Prakash,S. Patnaik,A. K. Ganguli###
(1395521, 1395530)
Strong electron-electron correlation and weak localization in CeO0.9F0.1Fe1-xCox<missing VAR>As.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[48.0, 11, 'K', 1],[183.0, 9.8, 'K', 3],[391.0, 1.6, 'and', 7]

As
###Strong electron-electron correlation and weak localization in CeO_{0.9}F_{0.1}Fe_{1-x}Co_xAs|S. J. Singh,J. Prakash,S. Patnaik,A. K. Ganguli###
(1395532, 1395532)
Strong electron-electron correlation and weak localization in CeO0.9F0.1Fe1-xCox<missing VAR>As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 11, 'K', 1],[181.0, 9.8, 'K', 3],[389.0, 1.6, 'and', 7]

(CeOFeAs)
###Strong electron-electron correlation and weak localization in CeO_{0.9}F_{0.1}Fe_{1-x}Co_xAs|S. J. Singh,J. Prakash,S. Patnaik,A. K. Ganguli###
(1395545, 1395550)
 Electron-doping of the semimetal (CeOFeAs) by either fluorine (max Tc  43K)or cobalt (max Tc  11 K) leads to superconductivity.
Featurization successful!
0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 11, 'K', 0],[163.0, 9.8, 'K', 2],[371.0, 1.6, 'and', 6]

Tc
###Strong electron-electron correlation and weak localization in CeO_{0.9}F_{0.1}Fe_{1-x}Co_xAs|S. J. Singh,J. Prakash,S. Patnaik,A. K. Ganguli###
(1395561, 1395561)
 Electron-doping of the semimetal (CeOFeAs) by either fluorine (max Tc  43K)or cobalt (max Tc  11 K) leads to superconductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 11, 'K', 0],[152.0, 9.8, 'K', 2],[360.0, 1.6, 'and', 6]

K
###Strong electron-electron correlation and weak localization in CeO_{0.9}F_{0.1}Fe_{1-x}Co_xAs|S. J. Singh,J. Prakash,S. Patnaik,A. K. Ganguli###
(1395567, 1395567)
 Electron-doping of the semimetal (CeOFeAs) by either fluorine (max Tc  43K)or cobalt (max Tc  11 K) leads to superconductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 11, 'K', 0],[146.0, 9.8, 'K', 2],[354.0, 1.6, 'and', 6]

Tc
###Strong electron-electron correlation and weak localization in CeO_{0.9}F_{0.1}Fe_{1-x}Co_xAs|S. J. Singh,J. Prakash,S. Patnaik,A. K. Ganguli###
(1395576, 1395576)
 Electron-doping of the semimetal (CeOFeAs) by either fluorine (max Tc  43K)or cobalt (max Tc  11 K) leads to superconductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 11, 'K', 0],[137.0, 9.8, 'K', 2],[345.0, 1.6, 'and', 6]

(Co)
###Strong electron-electron correlation and weak localization in CeO_{0.9}F_{0.1}Fe_{1-x}Co_xAs|S. J. Singh,J. Prakash,S. Patnaik,A. K. Ganguli###
(1395605, 1395607)
 Here we show the effectof transition metal (Co) substitution at the iron site on the superconductingproperties of CeO0.9F0.1FeAs (Tc 38 K)to understand the interplay of chargecarriers in both the rare earth-oxygen and Fe-As layers.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 11, 'K', 1],[106.0, 9.8, 'K', 1],[314.0, 1.6, 'and', 5]

CeO0.9F0.1FeAs
###Strong electron-electron correlation and weak localization in CeO_{0.9}F_{0.1}Fe_{1-x}Co_xAs|S. J. Singh,J. Prakash,S. Patnaik,A. K. Ganguli###
(1395630, 1395636)
 Here we show the effectof transition metal (Co) substitution at the iron site on the superconductingproperties of CeO0.9F0.1FeAs (Tc 38 K)to understand the interplay of chargecarriers in both the rare earth-oxygen and Fe-As layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.225,0.025,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 11, 'K', 1],[77.0, 9.8, 'K', 1],[285.0, 1.6, 'and', 5]

Tc
###Strong electron-electron correlation and weak localization in CeO_{0.9}F_{0.1}Fe_{1-x}Co_xAs|S. J. Singh,J. Prakash,S. Patnaik,A. K. Ganguli###
(1395639, 1395639)
 Here we show the effectof transition metal (Co) substitution at the iron site on the superconductingproperties of CeO0.9F0.1FeAs (Tc 38 K)to understand the interplay of chargecarriers in both the rare earth-oxygen and Fe-As layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 11, 'K', 1],[74.0, 9.8, 'K', 1],[282.0, 1.6, 'and', 5]

K
###Strong electron-electron correlation and weak localization in CeO_{0.9}F_{0.1}Fe_{1-x}Co_xAs|S. J. Singh,J. Prakash,S. Patnaik,A. K. Ganguli###
(1395643, 1395643)
 Here we show the effectof transition metal (Co) substitution at the iron site on the superconductingproperties of CeO0.9F0.1FeAs (Tc 38 K)to understand the interplay of chargecarriers in both the rare earth-oxygen and Fe-As layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 11, 'K', 1],[70.0, 9.8, 'K', 1],[278.0, 1.6, 'and', 5]

Fe
###Strong electron-electron correlation and weak localization in CeO_{0.9}F_{0.1}Fe_{1-x}Co_xAs|S. J. Singh,J. Prakash,S. Patnaik,A. K. Ganguli###
(1395674, 1395674)
 Here we show the effectof transition metal (Co) substitution at the iron site on the superconductingproperties of CeO0.9F0.1FeAs (Tc 38 K)to understand the interplay of chargecarriers in both the rare earth-oxygen and Fe-As layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 11, 'K', 1],[39.0, 9.8, 'K', 1],[247.0, 1.6, 'and', 5]

As
###Strong electron-electron correlation and weak localization in CeO_{0.9}F_{0.1}Fe_{1-x}Co_xAs|S. J. Singh,J. Prakash,S. Patnaik,A. K. Ganguli###
(1395676, 1395676)
 Here we show the effectof transition metal (Co) substitution at the iron site on the superconductingproperties of CeO0.9F0.1FeAs (Tc 38 K)to understand the interplay of chargecarriers in both the rare earth-oxygen and Fe-As layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 11, 'K', 1],[37.0, 9.8, 'K', 1],[245.0, 1.6, 'and', 5]

Tc
###Strong electron-electron correlation and weak localization in CeO_{0.9}F_{0.1}Fe_{1-x}Co_xAs|S. J. Singh,J. Prakash,S. Patnaik,A. K. Ganguli###
(1395710, 1395710)
 Simultaneous doping ofequivalent number of charge carriers in both layers leads to a Tc of 9.8 Kwhich is lower than the Tc obtained when either the conducting layer (CeAs) orcharge reservoir layer (CeO) is individually doped.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 11, 'K', 2],[3.0, 9.8, 'K', 0],[211.0, 1.6, 'and', 4]

Tc
###Strong electron-electron correlation and weak localization in CeO_{0.9}F_{0.1}Fe_{1-x}Co_xAs|S. J. Singh,J. Prakash,S. Patnaik,A. K. Ganguli###
(1395726, 1395726)
 Simultaneous doping ofequivalent number of charge carriers in both layers leads to a Tc of 9.8 Kwhich is lower than the Tc obtained when either the conducting layer (CeAs) orcharge reservoir layer (CeO) is individually doped.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 11, 'K', 2],[13.0, 9.8, 'K', 0],[195.0, 1.6, 'and', 4]

(CeAs)
###Strong electron-electron correlation and weak localization in CeO_{0.9}F_{0.1}Fe_{1-x}Co_xAs|S. J. Singh,J. Prakash,S. Patnaik,A. K. Ganguli###
(1395740, 1395743)
 Simultaneous doping ofequivalent number of charge carriers in both layers leads to a Tc of 9.8 Kwhich is lower than the Tc obtained when either the conducting layer (CeAs) orcharge reservoir layer (CeO) is individually doped.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 11, 'K', 2],[27.0, 9.8, 'K', 0],[178.0, 1.6, 'and', 4]

(CeO)
###Strong electron-electron correlation and weak localization in CeO_{0.9}F_{0.1}Fe_{1-x}Co_xAs|S. J. Singh,J. Prakash,S. Patnaik,A. K. Ganguli###
(1395754, 1395757)
 Simultaneous doping ofequivalent number of charge carriers in both layers leads to a Tc of 9.8 Kwhich is lower than the Tc obtained when either the conducting layer (CeAs) orcharge reservoir layer (CeO) is individually doped.
Featurization successful!
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[176.0, 11, 'K', 2],[41.0, 9.8, 'K', 0],[164.0, 1.6, 'and', 4]

Tc
###Strong electron-electron correlation and weak localization in CeO_{0.9}F_{0.1}Fe_{1-x}Co_xAs|S. J. Singh,J. Prakash,S. Patnaik,A. K. Ganguli###
(1395813, 1395813)
 Theresistivity shows a T<missing VAR>2 dependence (T<missing VAR> >>Tc) which indicates strongelectron-electron correlation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[235.0, 11, 'K', 4],[100.0, 9.8, 'K', 2],[108.0, 1.6, 'and', 2]

CeO0.9F0.1FeAs
###Strong electron-electron correlation and weak localization in CeO_{0.9}F_{0.1}Fe_{1-x}Co_xAs|S. J. Singh,J. Prakash,S. Patnaik,A. K. Ganguli###
(1395857, 1395863)
 Hall coefficient and thermoelectric powerindicate increased carrier concentration with cobalt doping in CeO0.9F0.1FeAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0.225,0.025,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[279.0, 11, 'K', 5],[144.0, 9.8, 'K', 3],[58.0, 1.6, 'and', 1]

CeO0.9F0.1Fe0.95Co0.05As
###Strong electron-electron correlation and weak localization in CeO_{0.9}F_{0.1}Fe_{1-x}Co_xAs|S. J. Singh,J. Prakash,S. Patnaik,A. K. Ganguli###
(1395879, 1395888)
The rf penetration depth both for CeO0.9F0.1Fe0.95Co0.05As and CeO0.9F0.1FeAsshow an exponential temperature dependence with a gap value of  1.6 and 1.9meV.
Featurization terminated normally.
0,0,0,0,0,0,0,0.225,0.025,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2375,0.0125,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[301.0, 11, 'K', 6],[166.0, 9.8, 'K', 4],[33.0, 1.6, 'and', 0]

CeO0.9F0.1FeAs
###Strong electron-electron correlation and weak localization in CeO_{0.9}F_{0.1}Fe_{1-x}Co_xAs|S. J. Singh,J. Prakash,S. Patnaik,A. K. Ganguli###
(1395892, 1395898)
The rf penetration depth both for CeO0.9F0.1Fe0.95Co0.05As and CeO0.9F0.1FeAsshow an exponential temperature dependence with a gap value of  1.6 and 1.9meV.
Featurization terminated normally.
0,0,0,0,0,0,0,0.225,0.025,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[314.0, 11, 'K', 6],[179.0, 9.8, 'K', 4],[23.0, 1.6, 'and', 0]

V
###Strong electron-electron correlation and weak localization in CeO_{0.9}F_{0.1}Fe_{1-x}Co_xAs|S. J. Singh,J. Prakash,S. Patnaik,A. K. Ganguli###
(1395927, 1395927)
The rf penetration depth both for CeO0.9F0.1Fe0.95Co0.05As and CeO0.9F0.1FeAsshow an exponential temperature dependence with a gap value of  1.6 and 1.9meV.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[349.0, 11, 'K', 6],[214.0, 9.8, 'K', 4],[6.0, 1.6, 'and', 0]

Tc
###Strong electron-electron correlation and weak localization in CeO_{0.9}F_{0.1}Fe_{1-x}Co_xAs|S. J. Singh,J. Prakash,S. Patnaik,A. K. Ganguli###
(1395950, 1395950)
 A resistance minimum is observed in the normal state near Tc which alsoshows negative magnetoresistance and provides evidence for the onset of weaklocalization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[372.0, 11, 'K', 7],[237.0, 9.8, 'K', 5],[29.0, 1.6, 'and', 1]

Nb1-yFe2
###Magnetism in Nb(1-y)Fe(2+y) - composition and magnetic field dependence|D. Moroni-Klementowicz,M. Brando,C. Albrecht,W. J. Duncan,F. M. Grosche,D. Gruener,G. Kreiner###
(1396051, 1396056)
 We present a systematic study of transport and thermodynamic properties ofthe Laves phase system Nb1-yFe2y<missing VAR>.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[204.0, 0, 'to', 4]

Fe
###Magnetism in Nb(1-y)Fe(2+y) - composition and magnetic field dependence|D. Moroni-Klementowicz,M. Brando,C. Albrecht,W. J. Duncan,F. M. Grosche,D. Gruener,G. Kreiner###
(1396069, 1396069)
 Our measurements confirm thatFe-rich samples, as well as those rich in Nb (for mid y<missing VAR>midgeq 0.02), showbulk ferromagnetism at low temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[191.0, 0, 'to', 3]

Nb
###Magnetism in Nb(1-y)Fe(2+y) - composition and magnetic field dependence|D. Moroni-Klementowicz,M. Brando,C. Albrecht,W. J. Duncan,F. M. Grosche,D. Gruener,G. Kreiner###
(1396088, 1396088)
 Our measurements confirm thatFe-rich samples, as well as those rich in Nb (for mid y<missing VAR>midgeq 0.02), showbulk ferromagnetism at low temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[172.0, 0, 'to', 3]

NbFe2
###Magnetism in Nb(1-y)Fe(2+y) - composition and magnetic field dependence|D. Moroni-Klementowicz,M. Brando,C. Albrecht,W. J. Duncan,F. M. Grosche,D. Gruener,G. Kreiner###
(1396121, 1396123)
 For stoichiometric NbFe2, on theother hand, magnetization, magnetic susceptibility and magnetoresistanceresults point towards spin-density wave (SD<missing VAR>W) order, possibly helical, with asmall ordering wavevector Q<missing VAR> sim 0.05 AA-1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 0, 'to', 2]

S
###Magnetism in Nb(1-y)Fe(2+y) - composition and magnetic field dependence|D. Moroni-Klementowicz,M. Brando,C. Albrecht,W. J. Duncan,F. M. Grosche,D. Gruener,G. Kreiner###
(1396161, 1396161)
 For stoichiometric NbFe2, on theother hand, magnetization, magnetic susceptibility and magnetoresistanceresults point towards spin-density wave (SD<missing VAR>W) order, possibly helical, with asmall ordering wavevector Q<missing VAR> sim 0.05 AA-1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 0, 'to', 2]

W
###Magnetism in Nb(1-y)Fe(2+y) - composition and magnetic field dependence|D. Moroni-Klementowicz,M. Brando,C. Albrecht,W. J. Duncan,F. M. Grosche,D. Gruener,G. Kreiner###
(1396163, 1396163)
 For stoichiometric NbFe2, on theother hand, magnetization, magnetic susceptibility and magnetoresistanceresults point towards spin-density wave (SD<missing VAR>W) order, possibly helical, with asmall ordering wavevector Q<missing VAR> sim 0.05 AA-1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 0, 'to', 2]

S
###Magnetism in Nb(1-y)Fe(2+y) - composition and magnetic field dependence|D. Moroni-Klementowicz,M. Brando,C. Albrecht,W. J. Duncan,F. M. Grosche,D. Gruener,G. Kreiner###
(1396238, 1396238)
 Our results suggest that onapproaching the stoichiometric composition from the iron-rich side,ferromagnetism changes into long-wavelength SD<missing VAR>W order.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 0, 'to', 1]

W
###Magnetism in Nb(1-y)Fe(2+y) - composition and magnetic field dependence|D. Moroni-Klementowicz,M. Brando,C. Albrecht,W. J. Duncan,F. M. Grosche,D. Gruener,G. Kreiner###
(1396240, 1396240)
 Our results suggest that onapproaching the stoichiometric composition from the iron-rich side,ferromagnetism changes into long-wavelength SD<missing VAR>W order.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 0, 'to', 1]

In
###Magnetism in Nb(1-y)Fe(2+y) - composition and magnetic field dependence|D. Moroni-Klementowicz,M. Brando,C. Albrecht,W. J. Duncan,F. M. Grosche,D. Gruener,G. Kreiner###
(1396245, 1396245)
 In this scenario, Q<missing VAR>changes continuously from 0 to small, finite values at a Lifshitz point in thephase diagram, which is located near y<missing VAR>0.02.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 0, 'to', 0]

Fe
###Magnetism in Nb(1-y)Fe(2+y) - composition and magnetic field dependence|D. Moroni-Klementowicz,M. Brando,C. Albrecht,W. J. Duncan,F. M. Grosche,D. Gruener,G. Kreiner###
(1396305, 1396305)
 Further reducing the Fe contentsuppresses the SD<missing VAR>W transition temperature, which extrapolates to zero aty<missing VAR>approx -0.015.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 0, 'to', 1]

S
###Magnetism in Nb(1-y)Fe(2+y) - composition and magnetic field dependence|D. Moroni-Klementowicz,M. Brando,C. Albrecht,W. J. Duncan,F. M. Grosche,D. Gruener,G. Kreiner###
(1396314, 1396314)
 Further reducing the Fe contentsuppresses the SD<missing VAR>W transition temperature, which extrapolates to zero aty<missing VAR>approx -0.015.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 0, 'to', 1]

W
###Magnetism in Nb(1-y)Fe(2+y) - composition and magnetic field dependence|D. Moroni-Klementowicz,M. Brando,C. Albrecht,W. J. Duncan,F. M. Grosche,D. Gruener,G. Kreiner###
(1396316, 1396316)
 Further reducing the Fe contentsuppresses the SD<missing VAR>W transition temperature, which extrapolates to zero aty<missing VAR>approx -0.015.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 0, 'to', 1]

Fe
###Magnetism in Nb(1-y)Fe(2+y) - composition and magnetic field dependence|D. Moroni-Klementowicz,M. Brando,C. Albrecht,W. J. Duncan,F. M. Grosche,D. Gruener,G. Kreiner###
(1396345, 1396345)
 Around this Fe content magnetic fluctuations dominate thetemperature dependence of the resistivity and of the heat capacity whichdeviate from their conventional Fermi liquid forms, inferring the presence of aquantum critical point.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 0, 'to', 2]

S
###Magnetism in Nb(1-y)Fe(2+y) - composition and magnetic field dependence|D. Moroni-Klementowicz,M. Brando,C. Albrecht,W. J. Duncan,F. M. Grosche,D. Gruener,G. Kreiner###
(1396430, 1396430)
 Because the critical point is located between the SD<missing VAR>Wphase associated with stoichiometric NbFe2 and the ferromagnetic order whichreemerges for very Nb-rich NbFe2, the observed temperature dependences couldbe attributed both to proximity to SD<missing VAR>W order or to ferromagnetism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[170.0, 0, 'to', 3]

W
###Magnetism in Nb(1-y)Fe(2+y) - composition and magnetic field dependence|D. Moroni-Klementowicz,M. Brando,C. Albrecht,W. J. Duncan,F. M. Grosche,D. Gruener,G. Kreiner###
(1396432, 1396432)
 Because the critical point is located between the SD<missing VAR>Wphase associated with stoichiometric NbFe2 and the ferromagnetic order whichreemerges for very Nb-rich NbFe2, the observed temperature dependences couldbe attributed both to proximity to SD<missing VAR>W order or to ferromagnetism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[172.0, 0, 'to', 3]

NbFe2
###Magnetism in Nb(1-y)Fe(2+y) - composition and magnetic field dependence|D. Moroni-Klementowicz,M. Brando,C. Albrecht,W. J. Duncan,F. M. Grosche,D. Gruener,G. Kreiner###
(1396443, 1396445)
 Because the critical point is located between the SD<missing VAR>Wphase associated with stoichiometric NbFe2 and the ferromagnetic order whichreemerges for very Nb-rich NbFe2, the observed temperature dependences couldbe attributed both to proximity to SD<missing VAR>W order or to ferromagnetism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[183.0, 0, 'to', 3]

Nb
###Magnetism in Nb(1-y)Fe(2+y) - composition and magnetic field dependence|D. Moroni-Klementowicz,M. Brando,C. Albrecht,W. J. Duncan,F. M. Grosche,D. Gruener,G. Kreiner###
(1396464, 1396464)
 Because the critical point is located between the SD<missing VAR>Wphase associated with stoichiometric NbFe2 and the ferromagnetic order whichreemerges for very Nb-rich NbFe2, the observed temperature dependences couldbe attributed both to proximity to SD<missing VAR>W order or to ferromagnetism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[204.0, 0, 'to', 3]

NbFe2
###Magnetism in Nb(1-y)Fe(2+y) - composition and magnetic field dependence|D. Moroni-Klementowicz,M. Brando,C. Albrecht,W. J. Duncan,F. M. Grosche,D. Gruener,G. Kreiner###
(1396468, 1396470)
 Because the critical point is located between the SD<missing VAR>Wphase associated with stoichiometric NbFe2 and the ferromagnetic order whichreemerges for very Nb-rich NbFe2, the observed temperature dependences couldbe attributed both to proximity to SD<missing VAR>W order or to ferromagnetism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[208.0, 0, 'to', 3]

S
###Magnetism in Nb(1-y)Fe(2+y) - composition and magnetic field dependence|D. Moroni-Klementowicz,M. Brando,C. Albrecht,W. J. Duncan,F. M. Grosche,D. Gruener,G. Kreiner###
(1396496, 1396496)
 Because the critical point is located between the SD<missing VAR>Wphase associated with stoichiometric NbFe2 and the ferromagnetic order whichreemerges for very Nb-rich NbFe2, the observed temperature dependences couldbe attributed both to proximity to SD<missing VAR>W order or to ferromagnetism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[236.0, 0, 'to', 3]

W
###Magnetism in Nb(1-y)Fe(2+y) - composition and magnetic field dependence|D. Moroni-Klementowicz,M. Brando,C. Albrecht,W. J. Duncan,F. M. Grosche,D. Gruener,G. Kreiner###
(1396498, 1396498)
 Because the critical point is located between the SD<missing VAR>Wphase associated with stoichiometric NbFe2 and the ferromagnetic order whichreemerges for very Nb-rich NbFe2, the observed temperature dependences couldbe attributed both to proximity to SD<missing VAR>W order or to ferromagnetism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[238.0, 0, 'to', 3]

Fe/Al2O3
###Information Processing with Pure Spin Currents in Silicon: Spin Injection, Extraction, Manipulation and Detection|Olaf M. J. van "t Erve,Chaffra Awo-Affouda,Aubrey T. Hanbicki,Connie H. Li,Phillip E. Thompson,Berend T. Jonker###
(1396580, 1396585)
 Fe/Al2O3 tunnel barrier contacts are used to producesignificant electron spin polarization in the silicon, generating a spincurrent which flows outside of the charge current path.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Fe
###Information Processing with Pure Spin Currents in Silicon: Spin Injection, Extraction, Manipulation and Detection|Olaf M. J. van "t Erve,Chaffra Awo-Affouda,Aubrey T. Hanbicki,Connie H. Li,Phillip E. Thompson,Berend T. Jonker###
(1396691, 1396691)
 The spin orientation ofthis pure spin current is controlled in one of three ways (a) by switching themagnetization of the Fe contact, (b) by changing the polarity of the bias onthe Fe/Al2O3 (injector) contact, which enables the generation of eithermajority or minority spin populations in the Si, providing a way toelectrically manipulate the injected spin orientation without changing themagnetization of the contact itself, and (c) by inducing spin precessionthrough application of a small perpendicular magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/Al2O3
###Information Processing with Pure Spin Currents in Silicon: Spin Injection, Extraction, Manipulation and Detection|Olaf M. J. van "t Erve,Chaffra Awo-Affouda,Aubrey T. Hanbicki,Connie H. Li,Phillip E. Thompson,Berend T. Jonker###
(1396719, 1396724)
 The spin orientation ofthis pure spin current is controlled in one of three ways (a) by switching themagnetization of the Fe contact, (b) by changing the polarity of the bias onthe Fe/Al2O3 (injector) contact, which enables the generation of eithermajority or minority spin populations in the Si, providing a way toelectrically manipulate the injected spin orientation without changing themagnetization of the contact itself, and (c) by inducing spin precessionthrough application of a small perpendicular magnetic field.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Si
###Information Processing with Pure Spin Currents in Silicon: Spin Injection, Extraction, Manipulation and Detection|Olaf M. J. van "t Erve,Chaffra Awo-Affouda,Aubrey T. Hanbicki,Connie H. Li,Phillip E. Thompson,Berend T. Jonker###
(1396760, 1396760)
 The spin orientation ofthis pure spin current is controlled in one of three ways (a) by switching themagnetization of the Fe contact, (b) by changing the polarity of the bias onthe Fe/Al2O3 (injector) contact, which enables the generation of eithermajority or minority spin populations in the Si, providing a way toelectrically manipulate the injected spin orientation without changing themagnetization of the contact itself, and (c) by inducing spin precessionthrough application of a small perpendicular magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZnO
###Ferromagnetic transition metal implanted ZnO: a diluted magnetic semiconductor?|Shengqiang Zhou,K. Potzger,Qingyu Xu,G. Talut,M. Lorenz,W. Skorupa,M. Helm,J. Fassbender,M. Grundmann,H. Schmidt###
(1397427, 1397428)
Ferromagnetic transition metal implanted ZnO a diluted magnetic semiconductor?
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[419.0, 10, 'and', 10],[420.0, 40, 'at', 10]

O
###Ferromagnetic transition metal implanted ZnO: a diluted magnetic semiconductor?|Shengqiang Zhou,K. Potzger,Qingyu Xu,G. Talut,M. Lorenz,W. Skorupa,M. Helm,J. Fassbender,M. Grundmann,H. Schmidt###
(1397461, 1397461)
 ZnO) dopedwith magnetic ions are diluted magnetic semiconductors (DMS).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[386.0, 10, 'and', 8],[387.0, 40, 'at', 8]

S
###Ferromagnetic transition metal implanted ZnO: a diluted magnetic semiconductor?|Shengqiang Zhou,K. Potzger,Qingyu Xu,G. Talut,M. Lorenz,W. Skorupa,M. Helm,J. Fassbender,M. Grundmann,H. Schmidt###
(1397484, 1397484)
 ZnO) dopedwith magnetic ions are diluted magnetic semiconductors (DMS).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[363.0, 10, 'and', 8],[364.0, 40, 'at', 8]

In
###Ferromagnetic transition metal implanted ZnO: a diluted magnetic semiconductor?|Shengqiang Zhou,K. Potzger,Qingyu Xu,G. Talut,M. Lorenz,W. Skorupa,M. Helm,J. Fassbender,M. Grundmann,H. Schmidt###
(1397488, 1397488)
 In DMS magneticions substitute cation sites of the host semiconductor and are coupled by freecarriers resulting in ferromagnetism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[359.0, 10, 'and', 7],[360.0, 40, 'at', 7]

S
###Ferromagnetic transition metal implanted ZnO: a diluted magnetic semiconductor?|Shengqiang Zhou,K. Potzger,Qingyu Xu,G. Talut,M. Lorenz,W. Skorupa,M. Helm,J. Fassbender,M. Grundmann,H. Schmidt###
(1397492, 1397492)
 In DMS magneticions substitute cation sites of the host semiconductor and are coupled by freecarriers resulting in ferromagnetism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[355.0, 10, 'and', 7],[356.0, 40, 'at', 7]

S
###Ferromagnetic transition metal implanted ZnO: a diluted magnetic semiconductor?|Shengqiang Zhou,K. Potzger,Qingyu Xu,G. Talut,M. Lorenz,W. Skorupa,M. Helm,J. Fassbender,M. Grundmann,H. Schmidt###
(1397549, 1397549)
 One of the main obstacles in creating DMSmaterials is the formation of secondary phases because of the solid-solubilitylimit of magnetic ions in semiconductor host.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[298.0, 10, 'and', 6],[299.0, 40, 'at', 6]

In
###Ferromagnetic transition metal implanted ZnO: a diluted magnetic semiconductor?|Shengqiang Zhou,K. Potzger,Qingyu Xu,G. Talut,M. Lorenz,W. Skorupa,M. Helm,J. Fassbender,M. Grundmann,H. Schmidt###
(1397592, 1397592)
 In our study transition metalions were implanted into ZnO single crystals with the peak concentrations of0.5-10 at.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[255.0, 10, 'and', 5],[256.0, 40, 'at', 5]

ZnO
###Ferromagnetic transition metal implanted ZnO: a diluted magnetic semiconductor?|Shengqiang Zhou,K. Potzger,Qingyu Xu,G. Talut,M. Lorenz,W. Skorupa,M. Helm,J. Fassbender,M. Grundmann,H. Schmidt###
(1397611, 1397612)
 In our study transition metalions were implanted into ZnO single crystals with the peak concentrations of0.5-10 at.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[235.0, 10, 'and', 5],[236.0, 40, 'at', 5]

Fe
###Ferromagnetic transition metal implanted ZnO: a diluted magnetic semiconductor?|Shengqiang Zhou,K. Potzger,Qingyu Xu,G. Talut,M. Lorenz,W. Skorupa,M. Helm,J. Fassbender,M. Grundmann,H. Schmidt###
(1397682, 1397682)
 By synchrotron radiation X<missing VAR>-ray diffraction (XRD) secondary phases(Fe, Ni, Co and ferrite nanocrystals) were observed and have been identified asthe source for ferromagnetism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 10, 'and', 3],[166.0, 40, 'at', 3]

Ni
###Ferromagnetic transition metal implanted ZnO: a diluted magnetic semiconductor?|Shengqiang Zhou,K. Potzger,Qingyu Xu,G. Talut,M. Lorenz,W. Skorupa,M. Helm,J. Fassbender,M. Grundmann,H. Schmidt###
(1397685, 1397685)
 By synchrotron radiation X<missing VAR>-ray diffraction (XRD) secondary phases(Fe, Ni, Co and ferrite nanocrystals) were observed and have been identified asthe source for ferromagnetism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 10, 'and', 3],[163.0, 40, 'at', 3]

Co
###Ferromagnetic transition metal implanted ZnO: a diluted magnetic semiconductor?|Shengqiang Zhou,K. Potzger,Qingyu Xu,G. Talut,M. Lorenz,W. Skorupa,M. Helm,J. Fassbender,M. Grundmann,H. Schmidt###
(1397688, 1397688)
 By synchrotron radiation X<missing VAR>-ray diffraction (XRD) secondary phases(Fe, Ni, Co and ferrite nanocrystals) were observed and have been identified asthe source for ferromagnetism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[159.0, 10, 'and', 3],[160.0, 40, 'at', 3]

S
###Ferromagnetic transition metal implanted ZnO: a diluted magnetic semiconductor?|Shengqiang Zhou,K. Potzger,Qingyu Xu,G. Talut,M. Lorenz,W. Skorupa,M. Helm,J. Fassbender,M. Grundmann,H. Schmidt###
(1397815, 1397815)
 This resultsin the pitfall of using XRD to exclude secondary phase formation in DMSmaterials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 10, 'and', 1],[33.0, 40, 'at', 1]

Co
###Ferromagnetic transition metal implanted ZnO: a diluted magnetic semiconductor?|Shengqiang Zhou,K. Potzger,Qingyu Xu,G. Talut,M. Lorenz,W. Skorupa,M. Helm,J. Fassbender,M. Grundmann,H. Schmidt###
(1397832, 1397832)
 For comparison, the solubility of Co diluted in ZnO films rangesbetween 10 and 40 at.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 10, 'and', 0],[16.0, 40, 'at', 0]

ZnO
###Ferromagnetic transition metal implanted ZnO: a diluted magnetic semiconductor?|Shengqiang Zhou,K. Potzger,Qingyu Xu,G. Talut,M. Lorenz,W. Skorupa,M. Helm,J. Fassbender,M. Grundmann,H. Schmidt###
(1397838, 1397839)
 For comparison, the solubility of Co diluted in ZnO films rangesbetween 10 and 40 at.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 10, 'and', 0],[9.0, 40, 'at', 0]

Co
###Ferromagnetic transition metal implanted ZnO: a diluted magnetic semiconductor?|Shengqiang Zhou,K. Potzger,Qingyu Xu,G. Talut,M. Lorenz,W. Skorupa,M. Helm,J. Fassbender,M. Grundmann,H. Schmidt###
(1397873, 1397873)
 Such diluted, Co-doped ZnO films show paramagnetic behaviour.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 10, 'and', 2],[25.0, 40, 'at', 2]

ZnO
###Ferromagnetic transition metal implanted ZnO: a diluted magnetic semiconductor?|Shengqiang Zhou,K. Potzger,Qingyu Xu,G. Talut,M. Lorenz,W. Skorupa,M. Helm,J. Fassbender,M. Grundmann,H. Schmidt###
(1397877, 1397878)
 Such diluted, Co-doped ZnO films show paramagnetic behaviour.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 10, 'and', 2],[29.0, 40, 'at', 2]

Co
###Ferromagnetic transition metal implanted ZnO: a diluted magnetic semiconductor?|Shengqiang Zhou,K. Potzger,Qingyu Xu,G. Talut,M. Lorenz,W. Skorupa,M. Helm,J. Fassbender,M. Grundmann,H. Schmidt###
(1397901, 1397901)
However, only the magnetoresistance of Co-doped ZnO films reveals possible s-dexchange interaction as compared to Co-implanted ZnO single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 10, 'and', 3],[53.0, 40, 'at', 3]

ZnO
###Ferromagnetic transition metal implanted ZnO: a diluted magnetic semiconductor?|Shengqiang Zhou,K. Potzger,Qingyu Xu,G. Talut,M. Lorenz,W. Skorupa,M. Helm,J. Fassbender,M. Grundmann,H. Schmidt###
(1397905, 1397906)
However, only the magnetoresistance of Co-doped ZnO films reveals possible s-dexchange interaction as compared to Co-implanted ZnO single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 10, 'and', 3],[57.0, 40, 'at', 3]

Co
###Ferromagnetic transition metal implanted ZnO: a diluted magnetic semiconductor?|Shengqiang Zhou,K. Potzger,Qingyu Xu,G. Talut,M. Lorenz,W. Skorupa,M. Helm,J. Fassbender,M. Grundmann,H. Schmidt###
(1397929, 1397929)
However, only the magnetoresistance of Co-doped ZnO films reveals possible s-dexchange interaction as compared to Co-implanted ZnO single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 10, 'and', 3],[81.0, 40, 'at', 3]

ZnO
###Ferromagnetic transition metal implanted ZnO: a diluted magnetic semiconductor?|Shengqiang Zhou,K. Potzger,Qingyu Xu,G. Talut,M. Lorenz,W. Skorupa,M. Helm,J. Fassbender,M. Grundmann,H. Schmidt###
(1397933, 1397934)
However, only the magnetoresistance of Co-doped ZnO films reveals possible s-dexchange interaction as compared to Co-implanted ZnO single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 10, 'and', 3],[85.0, 40, 'at', 3]

La0.88Sr0.12CoO3
###Exchange bias effect involved with tunneling magnetoresistance in polycrystalline La_{0.88}Sr_{0.12}CoO_3|M. Patra,S. Majumdar,S. Giri###
(1397967, 1397973)
Exchange bias effect involved with tunneling magnetoresistance in polycrystalline La0.88Sr0.12CoO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0.024,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.176,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Exchange bias effect involved with tunneling magnetoresistance in polycrystalline La_{0.88}Sr_{0.12}CoO_3|M. Patra,S. Majumdar,S. Giri###
(1397988, 1397988)
 We report the exchange bias (E<missing VAR>B) effect along with tunnelingmagnetoresistance (MR) in polycrystalline La0.88Sr0.12CoO3.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.88Sr0.12CoO3
###Exchange bias effect involved with tunneling magnetoresistance in polycrystalline La_{0.88}Sr_{0.12}CoO_3|M. Patra,S. Majumdar,S. Giri###
(1398011, 1398017)
 We report the exchange bias (E<missing VAR>B) effect along with tunnelingmagnetoresistance (MR) in polycrystalline La0.88Sr0.12CoO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0.024,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.176,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(H)
###Exchange bias effect involved with tunneling magnetoresistance in polycrystalline La_{0.88}Sr_{0.12}CoO_3|M. Patra,S. Majumdar,S. Giri###
(1398045, 1398047)
 Analogous tothe shift in the magnetic hysteresis loop along the field (H)-axis a shift isclearly observed in the MR-H curve when the sample is cooled in a staticmagnetic field.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Exchange bias effect involved with tunneling magnetoresistance in polycrystalline La_{0.88}Sr_{0.12}CoO_3|M. Patra,S. Majumdar,S. Giri###
(1398069, 1398069)
 Analogous tothe shift in the magnetic hysteresis loop along the field (H)-axis a shift isclearly observed in the MR-H curve when the sample is cooled in a staticmagnetic field.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Exchange bias effect involved with tunneling magnetoresistance in polycrystalline La_{0.88}Sr_{0.12}CoO_3|M. Patra,S. Majumdar,S. Giri###
(1398115, 1398115)
 Training effect (TE) is a significant manifestation of E<missing VAR>Beffect which describes the decrease of E<missing VAR>B effect when sample is successivelyfield-cycled at a particular temperature.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Exchange bias effect involved with tunneling magnetoresistance in polycrystalline La_{0.88}Sr_{0.12}CoO_3|M. Patra,S. Majumdar,S. Giri###
(1398131, 1398131)
 Training effect (TE) is a significant manifestation of E<missing VAR>Beffect which describes the decrease of E<missing VAR>B effect when sample is successivelyfield-cycled at a particular temperature.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Exchange bias effect involved with tunneling magnetoresistance in polycrystalline La_{0.88}Sr_{0.12}CoO_3|M. Patra,S. Majumdar,S. Giri###
(1398178, 1398178)
 We observe TE in the shift of theMR-H curve which could be interpreted by the spin configurational relaxationmodel.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(FC)
###Exchange bias effect involved with tunneling magnetoresistance in polycrystalline La_{0.88}Sr_{0.12}CoO_3|M. Patra,S. Majumdar,S. Giri###
(1398212, 1398215)
 A strong field-cooled (FC) effect in the temperature as well as timedependence of resistivity is observed below spin freezing temperature.
Featurization successful!
0,0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FC
###Exchange bias effect involved with tunneling magnetoresistance in polycrystalline La_{0.88}Sr_{0.12}CoO_3|M. Patra,S. Majumdar,S. Giri###
(1398267, 1398268)
 Theunusual MR results measured in FC mode are interpreted in terms ofintragranular interface effect between short range ferromagnetic clusters andspin-glass matrix giving rise to the E<missing VAR>B effect.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Exchange bias effect involved with tunneling magnetoresistance in polycrystalline La_{0.88}Sr_{0.12}CoO_3|M. Patra,S. Majumdar,S. Giri###
(1398317, 1398317)
 Theunusual MR results measured in FC mode are interpreted in terms ofintragranular interface effect between short range ferromagnetic clusters andspin-glass matrix giving rise to the E<missing VAR>B effect.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Exchange bias effect involved with tunneling magnetoresistance in polycrystalline La_{0.88}Sr_{0.12}CoO_3|M. Patra,S. Majumdar,S. Giri###
(1398323, 1398323)
 E<missing VAR>B effect in MR has beenobserved in bilayer or multilayer films which has not yet seen in apolycrystalline compound.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Exchange bias effect involved with tunneling magnetoresistance in polycrystalline La_{0.88}Sr_{0.12}CoO_3|M. Patra,S. Majumdar,S. Giri###
(1398370, 1398370)
 E<missing VAR>B effect involved with tunneling MR andsemiconducting transport property attributed to the intragranular intrinsicnanostructure is promising for the spintronic applications.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeSe
###The pseudogap behavior in the stoichiometric FeSe superconductor (Tc~9.4 K)|Yoo Jang Song,Jong Beom Hong,Byeong Hun Min,Kyu Jun Lee,Myung Hwa Jung,Jong-Soo Rhyee,Yong Seung Kwon###
(1398438, 1398439)
The pseudogap behavior in the stoichiometric FeSe superconductor (Tc9.4 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 9.4, 'K', 2],[164.0, 200, 'K', 4],[348.0, 30, 'K', 8]

Tc9.4
###The pseudogap behavior in the stoichiometric FeSe superconductor (Tc~9.4 K)|Yoo Jang Song,Jong Beom Hong,Byeong Hun Min,Kyu Jun Lee,Myung Hwa Jung,Jong-Soo Rhyee,Yong Seung Kwon###
(1398444, 1398445)
The pseudogap behavior in the stoichiometric FeSe superconductor (Tc9.4 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 9.4, 'K', 2],[158.0, 200, 'K', 4],[342.0, 30, 'K', 8]

K
###The pseudogap behavior in the stoichiometric FeSe superconductor (Tc~9.4 K)|Yoo Jang Song,Jong Beom Hong,Byeong Hun Min,Kyu Jun Lee,Myung Hwa Jung,Jong-Soo Rhyee,Yong Seung Kwon###
(1398447, 1398447)
The pseudogap behavior in the stoichiometric FeSe superconductor (Tc9.4 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 9.4, 'K', 2],[156.0, 200, 'K', 4],[340.0, 30, 'K', 8]

FeSe
###The pseudogap behavior in the stoichiometric FeSe superconductor (Tc~9.4 K)|Yoo Jang Song,Jong Beom Hong,Byeong Hun Min,Kyu Jun Lee,Myung Hwa Jung,Jong-Soo Rhyee,Yong Seung Kwon###
(1398480, 1398481)
 This paper reports the synthesis and superconducting behaviors of thetetragonal iron-chalcogenide superconductor FeSe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 9.4, 'K', 1],[122.0, 200, 'K', 3],[306.0, 30, 'K', 7]

FeSe
###The pseudogap behavior in the stoichiometric FeSe superconductor (Tc~9.4 K)|Yoo Jang Song,Jong Beom Hong,Byeong Hun Min,Kyu Jun Lee,Myung Hwa Jung,Jong-Soo Rhyee,Yong Seung Kwon###
(1398550, 1398551)
 EPMA indicatedthe sample to have a stoichiometric FeSe ratio of 11 (pm0.02).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 9.4, 'K', 1],[52.0, 200, 'K', 1],[236.0, 30, 'K', 5]

V/K
###The pseudogap behavior in the stoichiometric FeSe superconductor (Tc~9.4 K)|Yoo Jang Song,Jong Beom Hong,Byeong Hun Min,Kyu Jun Lee,Myung Hwa Jung,Jong-Soo Rhyee,Yong Seung Kwon###
(1398580, 1398582)
 The Seebeckcoefficient which was 12.3 muV/K at room temperature, changed to a negativevalue near 200 K, indicating it to be a two carriers material.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[59.0, 9.4, 'K', 2],[21.0, 200, 'K', 0],[205.0, 30, 'K', 4]

S
###The pseudogap behavior in the stoichiometric FeSe superconductor (Tc~9.4 K)|Yoo Jang Song,Jong Beom Hong,Byeong Hun Min,Kyu Jun Lee,Myung Hwa Jung,Jong-Soo Rhyee,Yong Seung Kwon###
(1398643, 1398643)
 Above Tc, therho(T) curve revealed an S shape.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 9.4, 'K', 3],[40.0, 200, 'K', 1],[144.0, 30, 'K', 3]

K
###The pseudogap behavior in the stoichiometric FeSe superconductor (Tc~9.4 K)|Yoo Jang Song,Jong Beom Hong,Byeong Hun Min,Kyu Jun Lee,Myung Hwa Jung,Jong-Soo Rhyee,Yong Seung Kwon###
(1398687, 1398687)
 Hence d<missing VAR>rho(T)/dT, andd<missing VAR>2rho(T)/dT2 showed pseudogap-like behavior at T<missing VAR>110 K according tothe resistivity curvature mapping (RCM) method for high Tc cuprates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 9.4, 'K', 4],[84.0, 200, 'K', 2],[100.0, 30, 'K', 2]

H
###The pseudogap behavior in the stoichiometric FeSe superconductor (Tc~9.4 K)|Yoo Jang Song,Jong Beom Hong,Byeong Hun Min,Kyu Jun Lee,Myung Hwa Jung,Jong-Soo Rhyee,Yong Seung Kwon###
(1398729, 1398729)
Moreover, the magnetoresistance rhoH(T)/rhoH0 under a magnetic fieldand the Seebeck coefficient S(T) revealed revealed pseudogap-like behaviornear T<missing VAR>.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[208.0, 9.4, 'K', 5],[126.0, 200, 'K', 3],[58.0, 30, 'K', 1]

H0
###The pseudogap behavior in the stoichiometric FeSe superconductor (Tc~9.4 K)|Yoo Jang Song,Jong Beom Hong,Byeong Hun Min,Kyu Jun Lee,Myung Hwa Jung,Jong-Soo Rhyee,Yong Seung Kwon###
(1398735, 1398736)
Moreover, the magnetoresistance rhoH(T)/rhoH0 under a magnetic fieldand the Seebeck coefficient S(T) revealed revealed pseudogap-like behaviornear T<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[214.0, 9.4, 'K', 5],[132.0, 200, 'K', 3],[51.0, 30, 'K', 1]

S
###The pseudogap behavior in the stoichiometric FeSe superconductor (Tc~9.4 K)|Yoo Jang Song,Jong Beom Hong,Byeong Hun Min,Kyu Jun Lee,Myung Hwa Jung,Jong-Soo Rhyee,Yong Seung Kwon###
(1398755, 1398755)
Moreover, the magnetoresistance rhoH(T)/rhoH0 under a magnetic fieldand the Seebeck coefficient S(T) revealed revealed pseudogap-like behaviornear T<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[234.0, 9.4, 'K', 5],[152.0, 200, 'K', 3],[32.0, 30, 'K', 1]

S
###The pseudogap behavior in the stoichiometric FeSe superconductor (Tc~9.4 K)|Yoo Jang Song,Jong Beom Hong,Byeong Hun Min,Kyu Jun Lee,Myung Hwa Jung,Jong-Soo Rhyee,Yong Seung Kwon###
(1398796, 1398796)
 Interestingly, at the same temperature, 30 K, the sign of S(T)and all signs of d<missing VAR>2rho(T)/dT2 changed from negative to positive aboveTc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[275.0, 9.4, 'K', 6],[193.0, 200, 'K', 4],[9.0, 30, 'K', 0]

B
###Electronic transport through a graphene-based ferromagnetic/normal/ferromagnetic junction|Jiang-chai Chen,Shu-guang Cheng,Shun-Qing Shen,Qing-feng Sun###
(1398900, 1398900)
 Electronic transport in a graphene-based ferromagnetic/normal/ferromagneticjunction is investigated by means of Landauer-Bu<missing VAR>ttiker formulism and thenonequilibrium Greens<missing VAR> function technique.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 100, '%', 2],[173.0, 100, '%', 3],[208.0, 100, '%', 3],[253.0, 50, '%', 4]

In
###Electronic transport through a graphene-based ferromagnetic/normal/ferromagnetic junction|Jiang-chai Chen,Shu-guang Cheng,Shun-Qing Shen,Qing-feng Sun###
(1399171, 1399171)
 In addition, when themagnetizations of the left and right leads have a relative angle, theconductance changes as a cosine function of the angle.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 100, '%', 3],[98.0, 100, '%', 2],[63.0, 100, '%', 2],[18.0, 50, '%', 1]

At
###Superconductor-insulator quantum phase transition|V. F. Gantmakher,V. T. Dolgopolov###
(1399788, 1399788)
 At the first level,physical phenomena and processes are discussed which, while of no formalrelevance to the topic of transitions, are important for their implementationand observation; these include superconductivity in low electron densitymaterials, transport and magnetoresistance in superconducting island films andin highly resistive granular materials with superconducting grains, and theBerezinskii-Kosterlitz-Thouless transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Superconductor-insulator quantum phase transition|V. F. Gantmakher,V. T. Dolgopolov###
(1400146, 1400146)
 As a separate topic,data on nonlinear phenomena near the superconductor-insulator transition arepresented.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Superconductor-insulator quantum phase transition|V. F. Gantmakher,V. T. Dolgopolov###
(1400180, 1400180)
 At the final, summarizing, level the basic aspects of the problemare enumerated again to identify where further research is needed and how thisresearch can be carried out.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ta
###Theoretical Analysis of Drag Resistance in Amorphous Thin Films Exhibiting Superconductor-Insulator-Transition|Yue Zou,Gil Refael,Jongsoo Yoon###
(1400344, 1400344)
, Ta and InO, exhibits a range of yet unexplained curiousphenomena, such as a putative low-resistance metallic phase intervening thesuperconducting and the insulating phase, and a huge peak in themagnetoresistance at large magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[294.0, 2004, 'with', 5],[295.0, 25, 'nm', 5],[302.0, 0.07, 'K', 5]

InO
###Theoretical Analysis of Drag Resistance in Amorphous Thin Films Exhibiting Superconductor-Insulator-Transition|Yue Zou,Gil Refael,Jongsoo Yoon###
(1400348, 1400349)
, Ta and InO, exhibits a range of yet unexplained curiousphenomena, such as a putative low-resistance metallic phase intervening thesuperconducting and the insulating phase, and a huge peak in themagnetoresistance at large magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[289.0, 2004, 'with', 5],[290.0, 25, 'nm', 5],[297.0, 0.07, 'K', 5]

C
###AC-driven Vortices and the Hall Effect in a Superconductor with a Tilted Washboard Pinning Potential|Valerij A. Shklovskij,Oleksandr V. Dobrovolskiy###
(1400749, 1400749)
AC-driven Vortices and the Hall Effect in a Superconductor with a Tilted Washboard Pinning Potential.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[325.0, 2, 'D', 5]

W
###AC-driven Vortices and the Hall Effect in a Superconductor with a Tilted Washboard Pinning Potential|Valerij A. Shklovskij,Oleksandr V. Dobrovolskiy###
(1401028, 1401028)
 Theinfluence of a subcritical or overcritical dc on the time-dependent stationaryac longitudinal and transverse resistive vortex responses (on the frequency ofan ac drive W) in terms of the nonlinear impedance tensor Z<missing VAR> and the nonlinearac response at W-harmonics are studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 2, 'D', 1]

W
###AC-driven Vortices and the Hall Effect in a Superconductor with a Tilted Washboard Pinning Potential|Valerij A. Shklovskij,Oleksandr V. Dobrovolskiy###
(1401060, 1401060)
 Theinfluence of a subcritical or overcritical dc on the time-dependent stationaryac longitudinal and transverse resistive vortex responses (on the frequency ofan ac drive W) in terms of the nonlinear impedance tensor Z<missing VAR> and the nonlinearac response at W-harmonics are studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 2, 'D', 1]

LaAlO3/SrTiO3
###Large capacitance enhancement and negative compressibility of two-dimensional electronic systems at LaAlO$_3$/SrTiO$_3$ interfaces|Lu Li,C. Richter,S. Paetel,T. Kopp,J. Mannhart,R. C. Ashoori###
(1401223, 1401231)
Large capacitance enhancement and negative compressibility of two-dimensional electronic systems at LaAlO3/SrTiO3 interfaces.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

LaAlO3/SrTiO3
###Large capacitance enhancement and negative compressibility of two-dimensional electronic systems at LaAlO$_3$/SrTiO$_3$ interfaces|Lu Li,C. Richter,S. Paetel,T. Kopp,J. Mannhart,R. C. Ashoori###
(1401295, 1401303)
 A high mobility electronsystem forms at the LaAlO3/SrTiO3 interface and, strikingly, bothsuperconducts and displays indications of hysteretic magnetoresistance.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

In
###Large capacitance enhancement and negative compressibility of two-dimensional electronic systems at LaAlO$_3$/SrTiO$_3$ interfaces|Lu Li,C. Richter,S. Paetel,T. Kopp,J. Mannhart,R. C. Ashoori###
(1401522, 1401522)
 In the same low density region, themetallic interface overscreens an external electric field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaSb2
###Optical conductivity and superconductivity in LaSb$_2$|J. F. DiTusa,V. Guritanu,S. Guo,D. P. Young,P. W. Adams,R. G. Goodrich,J. Y. Chan,D. van der Marel###
(1401669, 1401671)
Optical conductivity and superconductivity in LaSb2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 20, 'K', 2],[225.0, 0.4, 'K', 4],[256.0, 2.5, 'K', 4],[303.0, 0.2, 'K', 5],[314.0, 2.5, 'K', 5]

LaSb2
###Optical conductivity and superconductivity in LaSb$_2$|J. F. DiTusa,V. Guritanu,S. Guo,D. P. Young,P. W. Adams,R. G. Goodrich,J. Y. Chan,D. van der Marel###
(1401699, 1401701)
 We have measured the resistivity, optical conductivity, and magneticsusceptibility of LaSb2 to search for clues as to the cause of theextraordinarily large linear magnetoresistance and to explore the properties ofthe superconducting state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 20, 'K', 1],[195.0, 0.4, 'K', 3],[226.0, 2.5, 'K', 3],[273.0, 0.2, 'K', 4],[284.0, 2.5, 'K', 4]

In
###Optical conductivity and superconductivity in LaSb$_2$|J. F. DiTusa,V. Guritanu,S. Guo,D. P. Young,P. W. Adams,R. G. Goodrich,J. Y. Chan,D. van der Marel###
(1401804, 1401804)
 In addition, only small changes to the opticalreflectivity with magnetic field are observed indicating that the MR is due toscattering rate, not charge density, variations with field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 20, 'K', 1],[92.0, 0.4, 'K', 1],[123.0, 2.5, 'K', 1],[170.0, 0.2, 'K', 2],[181.0, 2.5, 'K', 2]

In
###Optical conductivity and superconductivity in LaSb$_2$|J. F. DiTusa,V. Guritanu,S. Guo,D. P. Young,P. W. Adams,R. G. Goodrich,J. Y. Chan,D. van der Marel###
(1401930, 1401930)
 In crystalline samples, wefind a high degree of variability with a minority of samples displaying a fullMeissner fraction below 0.2 K and fluctuations apparent up to 2.5 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 20, 'K', 3],[34.0, 0.4, 'K', 1],[3.0, 2.5, 'K', 1],[44.0, 0.2, 'K', 0],[55.0, 2.5, 'K', 0]

CeNiGe3
###Tuning Low Temperature Physical Properties of CeNiGe$_{3}$ by Magnetic Field|E. D. Mun,S. L. Bud'ko,A. Kreyssig,P. C. Canfield###
(1402043, 1402046)
Tuning Low Temperature Physical Properties of CeNiGe3 by Magnetic Field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[207.0, 100, ',', 3],[219.0, 170, ',', 3],[253.0, 5.0, ',', 4],[284.0, 2, ',', 5],[288.0, 4, ',', 5],[309.0, 0.4, ',', 5],[369.0, 32.5, ',', 6]

CeNiGe3
###Tuning Low Temperature Physical Properties of CeNiGe$_{3}$ by Magnetic Field|E. D. Mun,S. L. Bud'ko,A. Kreyssig,P. C. Canfield###
(1402086, 1402089)
 We have studied the thermal, magnetic, and electrical properties of theternary intermetallic system CeNiGe3 by means of specific heat,magnetization, and resistivity measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 100, ',', 2],[176.0, 170, ',', 2],[210.0, 5.0, ',', 3],[241.0, 2, ',', 4],[245.0, 4, ',', 4],[266.0, 0.4, ',', 4],[326.0, 32.5, ',', 5]

Ce3
###Tuning Low Temperature Physical Properties of CeNiGe$_{3}$ by Magnetic Field|E. D. Mun,S. L. Bud'ko,A. Kreyssig,P. C. Canfield###
(1402182, 1402183)
 The J<missing VAR>,,5/2 multiplet ofthe Ce3 is split by the crystalline electric field (CE<missing VAR>F) into threeKramers doublets, where the second and third doublet are separated from thefirst (ground state) doublet by Delta1 sim 100,K and Delta2sim 170,K, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 100, ',', 0],[82.0, 170, ',', 0],[116.0, 5.0, ',', 1],[147.0, 2, ',', 2],[151.0, 4, ',', 2],[172.0, 0.4, ',', 2],[232.0, 32.5, ',', 3]

C
###Tuning Low Temperature Physical Properties of CeNiGe$_{3}$ by Magnetic Field|E. D. Mun,S. L. Bud'ko,A. Kreyssig,P. C. Canfield###
(1402200, 1402200)
 The J<missing VAR>,,5/2 multiplet ofthe Ce3 is split by the crystalline electric field (CE<missing VAR>F) into threeKramers doublets, where the second and third doublet are separated from thefirst (ground state) doublet by Delta1 sim 100,K and Delta2sim 170,K, respectively.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 100, ',', 0],[65.0, 170, ',', 0],[99.0, 5.0, ',', 1],[130.0, 2, ',', 2],[134.0, 4, ',', 2],[155.0, 0.4, ',', 2],[215.0, 32.5, ',', 3]

F
###Tuning Low Temperature Physical Properties of CeNiGe$_{3}$ by Magnetic Field|E. D. Mun,S. L. Bud'ko,A. Kreyssig,P. C. Canfield###
(1402202, 1402202)
 The J<missing VAR>,,5/2 multiplet ofthe Ce3 is split by the crystalline electric field (CE<missing VAR>F) into threeKramers doublets, where the second and third doublet are separated from thefirst (ground state) doublet by Delta1 sim 100,K and Delta2sim 170,K, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 100, ',', 0],[63.0, 170, ',', 0],[97.0, 5.0, ',', 1],[128.0, 2, ',', 2],[132.0, 4, ',', 2],[153.0, 0.4, ',', 2],[213.0, 32.5, ',', 3]

K
###Tuning Low Temperature Physical Properties of CeNiGe$_{3}$ by Magnetic Field|E. D. Mun,S. L. Bud'ko,A. Kreyssig,P. C. Canfield###
(1402255, 1402255)
 The J<missing VAR>,,5/2 multiplet ofthe Ce3 is split by the crystalline electric field (CE<missing VAR>F) into threeKramers doublets, where the second and third doublet are separated from thefirst (ground state) doublet by Delta1 sim 100,K and Delta2sim 170,K, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 100, ',', 0],[10.0, 170, ',', 0],[44.0, 5.0, ',', 1],[75.0, 2, ',', 2],[79.0, 4, ',', 2],[100.0, 0.4, ',', 2],[160.0, 32.5, ',', 3]

K
###Tuning Low Temperature Physical Properties of CeNiGe$_{3}$ by Magnetic Field|E. D. Mun,S. L. Bud'ko,A. Kreyssig,P. C. Canfield###
(1402267, 1402267)
 The J<missing VAR>,,5/2 multiplet ofthe Ce3 is split by the crystalline electric field (CE<missing VAR>F) into threeKramers doublets, where the second and third doublet are separated from thefirst (ground state) doublet by Delta1 sim 100,K and Delta2sim 170,K, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 100, ',', 0],[2.0, 170, ',', 0],[32.0, 5.0, ',', 1],[63.0, 2, ',', 2],[67.0, 4, ',', 2],[88.0, 0.4, ',', 2],[148.0, 32.5, ',', 3]

In
###Tuning Low Temperature Physical Properties of CeNiGe$_{3}$ by Magnetic Field|E. D. Mun,S. L. Bud'ko,A. Kreyssig,P. C. Canfield###
(1402273, 1402273)
 In zero field CeNiGe3 exhibits anantiferromangeic order below T<missing VAR>N  5.0,K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 100, ',', 1],[8.0, 170, ',', 1],[26.0, 5.0, ',', 0],[57.0, 2, ',', 1],[61.0, 4, ',', 1],[82.0, 0.4, ',', 1],[142.0, 32.5, ',', 2]

CeNiGe3
###Tuning Low Temperature Physical Properties of CeNiGe$_{3}$ by Magnetic Field|E. D. Mun,S. L. Bud'ko,A. Kreyssig,P. C. Canfield###
(1402279, 1402282)
 In zero field CeNiGe3 exhibits anantiferromangeic order below T<missing VAR>N  5.0,K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 100, ',', 1],[14.0, 170, ',', 1],[17.0, 5.0, ',', 0],[48.0, 2, ',', 1],[52.0, 4, ',', 1],[73.0, 0.4, ',', 1],[133.0, 32.5, ',', 2]

N
###Tuning Low Temperature Physical Properties of CeNiGe$_{3}$ by Magnetic Field|E. D. Mun,S. L. Bud'ko,A. Kreyssig,P. C. Canfield###
(1402296, 1402296)
 In zero field CeNiGe3 exhibits anantiferromangeic order below T<missing VAR>N  5.0,K.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 100, ',', 1],[31.0, 170, ',', 1],[3.0, 5.0, ',', 0],[34.0, 2, ',', 1],[38.0, 4, ',', 1],[59.0, 0.4, ',', 1],[119.0, 32.5, ',', 2]

K
###Tuning Low Temperature Physical Properties of CeNiGe$_{3}$ by Magnetic Field|E. D. Mun,S. L. Bud'ko,A. Kreyssig,P. C. Canfield###
(1402301, 1402301)
 In zero field CeNiGe3 exhibits anantiferromangeic order below T<missing VAR>N  5.0,K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 100, ',', 1],[36.0, 170, ',', 1],[2.0, 5.0, ',', 0],[29.0, 2, ',', 1],[33.0, 4, ',', 1],[54.0, 0.4, ',', 1],[114.0, 32.5, ',', 2]

H
###Tuning Low Temperature Physical Properties of CeNiGe$_{3}$ by Magnetic Field|E. D. Mun,S. L. Bud'ko,A. Kreyssig,P. C. Canfield###
(1402308, 1402308)
 FortextbfH,parallel,textbfa two metamagnetic transitions are clearlyevidenced between 2,sim,4,K from the magnetization isotherm and extendeddown to 0.4,K from the magnetoresistance measurements.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 100, ',', 2],[43.0, 170, ',', 2],[9.0, 5.0, ',', 1],[22.0, 2, ',', 0],[26.0, 4, ',', 0],[47.0, 0.4, ',', 0],[107.0, 32.5, ',', 1]

K
###Tuning Low Temperature Physical Properties of CeNiGe$_{3}$ by Magnetic Field|E. D. Mun,S. L. Bud'ko,A. Kreyssig,P. C. Canfield###
(1402336, 1402336)
 FortextbfH,parallel,textbfa two metamagnetic transitions are clearlyevidenced between 2,sim,4,K from the magnetization isotherm and extendeddown to 0.4,K from the magnetoresistance measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 100, ',', 2],[71.0, 170, ',', 2],[37.0, 5.0, ',', 1],[6.0, 2, ',', 0],[2.0, 4, ',', 0],[19.0, 0.4, ',', 0],[79.0, 32.5, ',', 1]

K
###Tuning Low Temperature Physical Properties of CeNiGe$_{3}$ by Magnetic Field|E. D. Mun,S. L. Bud'ko,A. Kreyssig,P. C. Canfield###
(1402357, 1402357)
 FortextbfH,parallel,textbfa two metamagnetic transitions are clearlyevidenced between 2,sim,4,K from the magnetization isotherm and extendeddown to 0.4,K from the magnetoresistance measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 100, ',', 2],[92.0, 170, ',', 2],[58.0, 5.0, ',', 1],[27.0, 2, ',', 0],[23.0, 4, ',', 0],[2.0, 0.4, ',', 0],[58.0, 32.5, ',', 1]

H
###Tuning Low Temperature Physical Properties of CeNiGe$_{3}$ by Magnetic Field|E. D. Mun,S. L. Bud'ko,A. Kreyssig,P. C. Canfield###
(1402372, 1402372)
 FortextbfH,parallel,textbfa, T<missing VAR>N shifts to lower temperature asmagnetic field increases, and ultimately disappears at Hc<missing VAR> sim32.5,k<missing VAR>Oe.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 100, ',', 3],[107.0, 170, ',', 3],[73.0, 5.0, ',', 2],[42.0, 2, ',', 1],[38.0, 4, ',', 1],[17.0, 0.4, ',', 1],[43.0, 32.5, ',', 0]

N
###Tuning Low Temperature Physical Properties of CeNiGe$_{3}$ by Magnetic Field|E. D. Mun,S. L. Bud'ko,A. Kreyssig,P. C. Canfield###
(1402381, 1402381)
 FortextbfH,parallel,textbfa, T<missing VAR>N shifts to lower temperature asmagnetic field increases, and ultimately disappears at Hc<missing VAR> sim32.5,k<missing VAR>Oe.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 100, ',', 3],[116.0, 170, ',', 3],[82.0, 5.0, ',', 2],[51.0, 2, ',', 1],[47.0, 4, ',', 1],[26.0, 0.4, ',', 1],[34.0, 32.5, ',', 0]

H
###Tuning Low Temperature Physical Properties of CeNiGe$_{3}$ by Magnetic Field|E. D. Mun,S. L. Bud'ko,A. Kreyssig,P. C. Canfield###
(1402409, 1402409)
 FortextbfH,parallel,textbfa, T<missing VAR>N shifts to lower temperature asmagnetic field increases, and ultimately disappears at Hc<missing VAR> sim32.5,k<missing VAR>Oe.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 100, ',', 3],[144.0, 170, ',', 3],[110.0, 5.0, ',', 2],[79.0, 2, ',', 1],[75.0, 4, ',', 1],[54.0, 0.4, ',', 1],[6.0, 32.5, ',', 0]

H
###Tuning Low Temperature Physical Properties of CeNiGe$_{3}$ by Magnetic Field|E. D. Mun,S. L. Bud'ko,A. Kreyssig,P. C. Canfield###
(1402423, 1402423)
 For H,>,Hc<missing VAR>, the electrical resistivity shows the quadratictemperature dependence (Deltarho  A T<missing VAR>2).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[170.0, 100, ',', 4],[158.0, 170, ',', 4],[124.0, 5.0, ',', 3],[93.0, 2, ',', 2],[89.0, 4, ',', 2],[68.0, 0.4, ',', 2],[8.0, 32.5, ',', 1]

H
###Tuning Low Temperature Physical Properties of CeNiGe$_{3}$ by Magnetic Field|E. D. Mun,S. L. Bud'ko,A. Kreyssig,P. C. Canfield###
(1402427, 1402427)
 For H,>,Hc<missing VAR>, the electrical resistivity shows the quadratictemperature dependence (Deltarho  A T<missing VAR>2).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[174.0, 100, ',', 4],[162.0, 170, ',', 4],[128.0, 5.0, ',', 3],[97.0, 2, ',', 2],[93.0, 4, ',', 2],[72.0, 0.4, ',', 2],[12.0, 32.5, ',', 1]

H
###Tuning Low Temperature Physical Properties of CeNiGe$_{3}$ by Magnetic Field|E. D. Mun,S. L. Bud'ko,A. Kreyssig,P. C. Canfield###
(1402462, 1402462)
 For H gg Hc<missing VAR>, anunconventional Tn-dependence of Deltarho with n<missing VAR> > 2 emerges, theexponent n<missing VAR> becomes larger as magnetic field increases.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[209.0, 100, ',', 5],[197.0, 170, ',', 5],[163.0, 5.0, ',', 4],[132.0, 2, ',', 3],[128.0, 4, ',', 3],[107.0, 0.4, ',', 3],[47.0, 32.5, ',', 2]

H
###Tuning Low Temperature Physical Properties of CeNiGe$_{3}$ by Magnetic Field|E. D. Mun,S. L. Bud'ko,A. Kreyssig,P. C. Canfield###
(1402466, 1402466)
 For H gg Hc<missing VAR>, anunconventional Tn-dependence of Deltarho with n<missing VAR> > 2 emerges, theexponent n<missing VAR> becomes larger as magnetic field increases.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[213.0, 100, ',', 5],[201.0, 170, ',', 5],[167.0, 5.0, ',', 4],[136.0, 2, ',', 3],[132.0, 4, ',', 3],[111.0, 0.4, ',', 3],[51.0, 32.5, ',', 2]

CeNiGe3
###Tuning Low Temperature Physical Properties of CeNiGe$_{3}$ by Magnetic Field|E. D. Mun,S. L. Bud'ko,A. Kreyssig,P. C. Canfield###
(1402531, 1402534)
 Although theantiferromagnetic phase transition temperature in CeNiGe3 can becontinuously suppressed to zero, it provides an example of field tuning thatdoes not match current simple models of Quantum criticality.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[278.0, 100, ',', 6],[266.0, 170, ',', 6],[232.0, 5.0, ',', 5],[201.0, 2, ',', 4],[197.0, 4, ',', 4],[176.0, 0.4, ',', 4],[116.0, 32.5, ',', 3]

SrTiO3
###Unveiling a two-dimensional electron gas with universal subbands at the surface of SrTiO3|A. F. Santander-Syro,O. Copie,T. Kondo,F. Fortuna,S. Pailhes,R. Weht,X. G. Qiu,F. Bertran,A. Nicolaou,A. Taleb-Ibrahimi,P. Le Fevre,G. Herranz,M. Bibes,Y. Apertet,P. Lecoeur,M. J. Rozenberg,A. Barthelemy###
(1402620, 1402623)
Unveiling a two-dimensional electron gas with universal subbands at the surface of SrTiO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 2, 'D', 3],[226.0, 2, 'DEG', 4],[281.0, 2, 'DEG', 5],[379.0, 2, 'DEG', 7],[445.0, 2, 'DEG', 7],[476.0, 2, 'DEGs', 8],[502.0, 2, 'DEGs', 8]

(SrTiO3)
###Unveiling a two-dimensional electron gas with universal subbands at the surface of SrTiO3|A. F. Santander-Syro,O. Copie,T. Kondo,F. Fortuna,S. Pailhes,R. Weht,X. G. Qiu,F. Bertran,A. Nicolaou,A. Taleb-Ibrahimi,P. Le Fevre,G. Herranz,M. Bibes,Y. Apertet,P. Lecoeur,M. J. Rozenberg,A. Barthelemy###
(1402652, 1402657)
 Similar to silicon that is the basis of conventional electronics, strontiumtitanate (SrTiO3) is the bedrock of the emerging field of oxide electronics.
Featurization successful!
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 2, 'D', 2],[192.0, 2, 'DEG', 3],[247.0, 2, 'DEG', 4],[345.0, 2, 'DEG', 6],[411.0, 2, 'DEG', 6],[442.0, 2, 'DEGs', 7],[468.0, 2, 'DEGs', 7]

SrTiO3
###Unveiling a two-dimensional electron gas with universal subbands at the surface of SrTiO3|A. F. Santander-Syro,O. Copie,T. Kondo,F. Fortuna,S. Pailhes,R. Weht,X. G. Qiu,F. Bertran,A. Nicolaou,A. Taleb-Ibrahimi,P. Le Fevre,G. Herranz,M. Bibes,Y. Apertet,P. Lecoeur,M. J. Rozenberg,A. Barthelemy###
(1402681, 1402684)
SrTiO3 is the preferred template to create exotic two-dimensional (2D) phasesof electron matter at oxide interfaces, exhibiting metal-insulator transitions,superconductivity, or large negative magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 2, 'D', 1],[165.0, 2, 'DEG', 2],[220.0, 2, 'DEG', 3],[318.0, 2, 'DEG', 5],[384.0, 2, 'DEG', 5],[415.0, 2, 'DEGs', 6],[441.0, 2, 'DEGs', 6]

S
###Unveiling a two-dimensional electron gas with universal subbands at the surface of SrTiO3|A. F. Santander-Syro,O. Copie,T. Kondo,F. Fortuna,S. Pailhes,R. Weht,X. G. Qiu,F. Bertran,A. Nicolaou,A. Taleb-Ibrahimi,P. Le Fevre,G. Herranz,M. Bibes,Y. Apertet,P. Lecoeur,M. J. Rozenberg,A. Barthelemy###
(1402832, 1402832)
 Here we show, using angle-resolved photoemissionspectroscopy (ARPES), that there is a highly metallic universal 2DEG at thevacuum-cleaved surface of SrTiO3, independent of bulk carrier densities overmore than seven decades, including the undoped insulating material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 2, 'D', 1],[17.0, 2, 'DEG', 0],[72.0, 2, 'DEG', 1],[170.0, 2, 'DEG', 3],[236.0, 2, 'DEG', 3],[267.0, 2, 'DEGs', 4],[293.0, 2, 'DEGs', 4]

SrTiO3
###Unveiling a two-dimensional electron gas with universal subbands at the surface of SrTiO3|A. F. Santander-Syro,O. Copie,T. Kondo,F. Fortuna,S. Pailhes,R. Weht,X. G. Qiu,F. Bertran,A. Nicolaou,A. Taleb-Ibrahimi,P. Le Fevre,G. Herranz,M. Bibes,Y. Apertet,P. Lecoeur,M. J. Rozenberg,A. Barthelemy###
(1402864, 1402867)
 Here we show, using angle-resolved photoemissionspectroscopy (ARPES), that there is a highly metallic universal 2DEG at thevacuum-cleaved surface of SrTiO3, independent of bulk carrier densities overmore than seven decades, including the undoped insulating material.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 2, 'D', 1],[15.0, 2, 'DEG', 0],[37.0, 2, 'DEG', 1],[135.0, 2, 'DEG', 3],[201.0, 2, 'DEG', 3],[232.0, 2, 'DEGs', 4],[258.0, 2, 'DEGs', 4]

SrTiO3
###Unveiling a two-dimensional electron gas with universal subbands at the surface of SrTiO3|A. F. Santander-Syro,O. Copie,T. Kondo,F. Fortuna,S. Pailhes,R. Weht,X. G. Qiu,F. Bertran,A. Nicolaou,A. Taleb-Ibrahimi,P. Le Fevre,G. Herranz,M. Bibes,Y. Apertet,P. Lecoeur,M. J. Rozenberg,A. Barthelemy###
(1403013, 1403016)
 The similarity of this 2DEG with those reported inSrTiO3-based heterostructures and field-effect transistors suggests thatdifferent forms of electron confinement at the surface of SrTiO3 lead toessentially the same 2DEG.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[245.0, 2, 'D', 4],[164.0, 2, 'DEG', 3],[109.0, 2, 'DEG', 2],[11.0, 2, 'DEG', 0],[52.0, 2, 'DEG', 0],[83.0, 2, 'DEGs', 1],[109.0, 2, 'DEGs', 1]

SrTiO3
###Unveiling a two-dimensional electron gas with universal subbands at the surface of SrTiO3|A. F. Santander-Syro,O. Copie,T. Kondo,F. Fortuna,S. Pailhes,R. Weht,X. G. Qiu,F. Bertran,A. Nicolaou,A. Taleb-Ibrahimi,P. Le Fevre,G. Herranz,M. Bibes,Y. Apertet,P. Lecoeur,M. J. Rozenberg,A. Barthelemy###
(1403053, 1403056)
 The similarity of this 2DEG with those reported inSrTiO3-based heterostructures and field-effect transistors suggests thatdifferent forms of electron confinement at the surface of SrTiO3 lead toessentially the same 2DEG.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[285.0, 2, 'D', 4],[204.0, 2, 'DEG', 3],[149.0, 2, 'DEG', 2],[51.0, 2, 'DEG', 0],[12.0, 2, 'DEG', 0],[43.0, 2, 'DEGs', 1],[69.0, 2, 'DEGs', 1]

SrTiO3
###Unveiling a two-dimensional electron gas with universal subbands at the surface of SrTiO3|A. F. Santander-Syro,O. Copie,T. Kondo,F. Fortuna,S. Pailhes,R. Weht,X. G. Qiu,F. Bertran,A. Nicolaou,A. Taleb-Ibrahimi,P. Le Fevre,G. Herranz,M. Bibes,Y. Apertet,P. Lecoeur,M. J. Rozenberg,A. Barthelemy###
(1403103, 1403106)
 Our discovery provides a model system for the studyof the electronic structure of 2DEGs in SrTiO3-based devices, and a novel routeto generate 2DEGs at surfaces of transition-metal oxides.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[335.0, 2, 'D', 5],[254.0, 2, 'DEG', 4],[199.0, 2, 'DEG', 3],[101.0, 2, 'DEG', 1],[35.0, 2, 'DEG', 1],[4.0, 2, 'DEGs', 0],[19.0, 2, 'DEGs', 0]

S
###Noise-induced effects in magnetization reversal and chirality control of circular array of single-domained nanomagnets|A. L. Pankratov,S. N. Vdovichev,I. M. Nefedov,I. R. Karetnikova###
(1403856, 1403856)
 It has been demonstrated thatwith the reversal by the pulse with sinusoidal shape, the optimal pulseduration exists, which minimizes both the mean switching time (MST) and thestandard deviation (SD).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 10, 'degrees', 1],[152.0, 60, 'ns', 3],[205.0, 300, 'K', 4],[246.0, 20, 'nm', 4]

S
###Noise-induced effects in magnetization reversal and chirality control of circular array of single-domained nanomagnets|A. L. Pankratov,S. N. Vdovichev,I. M. Nefedov,I. R. Karetnikova###
(1403872, 1403872)
 Besides, both MST and SD<missing VAR> significantly depend on theangle between the reversal magnetic field and pentagon edge, and the optimalangle roughly equals 10 degrees.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 10, 'degrees', 0],[136.0, 60, 'ns', 2],[189.0, 300, 'K', 3],[230.0, 20, 'nm', 3]

S
###Noise-induced effects in magnetization reversal and chirality control of circular array of single-domained nanomagnets|A. L. Pankratov,S. N. Vdovichev,I. M. Nefedov,I. R. Karetnikova###
(1403976, 1403976)
 Also, it is demonstrated that the optimizationof the angle, duration and the amplitude of the driving field leads tosignificant decrease of both MST and SD<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 10, 'degrees', 1],[32.0, 60, 'ns', 1],[85.0, 300, 'K', 2],[126.0, 20, 'nm', 2]

In
###Noise-induced effects in magnetization reversal and chirality control of circular array of single-domained nanomagnets|A. L. Pankratov,S. N. Vdovichev,I. M. Nefedov,I. R. Karetnikova###
(1403980, 1403980)
 In particular, for the consideredparameters, the MST can be decreased from 60 ns to 2-3 ns.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 10, 'degrees', 2],[28.0, 60, 'ns', 0],[81.0, 300, 'K', 1],[122.0, 20, 'nm', 1]

Eu
###Anderson Localization Triggered by Spin Disorder---with an Application to Eu_x Ca_1-x B_6|Daniel Egli,Jürg Fröhlich,Hans-Rudolf Ott###
(1404135, 1404135)
Anderson Localization Triggered by Spin Disorder---with an Application to Eux<missing VAR> Ca1-x B6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ca1-x
###Anderson Localization Triggered by Spin Disorder---with an Application to Eu_x Ca_1-x B_6|Daniel Egli,Jürg Fröhlich,Hans-Rudolf Ott###
(1404138, 1404141)
Anderson Localization Triggered by Spin Disorder---with an Application to Eux<missing VAR> Ca1-x B6.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

B6
###Anderson Localization Triggered by Spin Disorder---with an Application to Eu_x Ca_1-x B_6|Daniel Egli,Jürg Fröhlich,Hans-Rudolf Ott###
(1404143, 1404144)
Anderson Localization Triggered by Spin Disorder---with an Application to Eux<missing VAR> Ca1-x B6.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Anderson Localization Triggered by Spin Disorder---with an Application to Eu_x Ca_1-x B_6|Daniel Egli,Jürg Fröhlich,Hans-Rudolf Ott###
(1404420, 1404420)
  Localization near the band edges persists in a weak external magnetic field,H, but disappears gradually, as H is increased.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Anderson Localization Triggered by Spin Disorder---with an Application to Eu_x Ca_1-x B_6|Daniel Egli,Jürg Fröhlich,Hans-Rudolf Ott###
(1404432, 1404432)
  Localization near the band edges persists in a weak external magnetic field,H, but disappears gradually, as H is increased.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Anderson Localization Triggered by Spin Disorder---with an Application to Eu_x Ca_1-x B_6|Daniel Egli,Jürg Fröhlich,Hans-Rudolf Ott###
(1404484, 1404484)
 Our results lead us to predictthe phenomenon of colossal (negative) magnetoresistance and the existence of aMott transition, as H and/or x<missing VAR> are increased.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Eu
###Anderson Localization Triggered by Spin Disorder---with an Application to Eu_x Ca_1-x B_6|Daniel Egli,Jürg Fröhlich,Hans-Rudolf Ott###
(1404525, 1404525)
  Our analysis is motivated directly by experimental results concerning themagnetic alloy Eux<missing VAR> Ca1-x B6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ca1-x
###Anderson Localization Triggered by Spin Disorder---with an Application to Eu_x Ca_1-x B_6|Daniel Egli,Jürg Fröhlich,Hans-Rudolf Ott###
(1404528, 1404531)
  Our analysis is motivated directly by experimental results concerning themagnetic alloy Eux<missing VAR> Ca1-x B6.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

B6
###Anderson Localization Triggered by Spin Disorder---with an Application to Eu_x Ca_1-x B_6|Daniel Egli,Jürg Fröhlich,Hans-Rudolf Ott###
(1404533, 1404534)
  Our analysis is motivated directly by experimental results concerning themagnetic alloy Eux<missing VAR> Ca1-x B6.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(SC)
###Cooper pair insulator in amorphous films induced by nanometer-scale thickness variations|S. M. Hollen,H. Q. Nguyen,E. Rudisaile,M. D. Stewart Jr.,J. Shainline,J. M. Xu,J. M. Valles Jr###
(1404580, 1404583)
 Unusual transport properties of superconducting (SC) materials, such as theunder doped cuprates, low dimensional superconductors in strong magneticfields, and insulating films near the Insulator Superconductor Transition(IST), have been attributed to the formation of inhomogeneous phases.
Featurization successful!
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

IS
###Cooper pair insulator in amorphous films induced by nanometer-scale thickness variations|S. M. Hollen,H. Q. Nguyen,E. Rudisaile,M. D. Stewart Jr.,J. Shainline,J. M. Xu,J. M. Valles Jr###
(1404636, 1404637)
 Unusual transport properties of superconducting (SC) materials, such as theunder doped cuprates, low dimensional superconductors in strong magneticfields, and insulating films near the Insulator Superconductor Transition(IST), have been attributed to the formation of inhomogeneous phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

IS
###Cooper pair insulator in amorphous films induced by nanometer-scale thickness variations|S. M. Hollen,H. Q. Nguyen,E. Rudisaile,M. D. Stewart Jr.,J. Shainline,J. M. Xu,J. M. Valles Jr###
(1404713, 1404714)
 Of primary interest here are proposals thatinsulating films near the IST<missing VAR>, which show an activated resistance and giantpositive magnetoresistance, contain islands of Cooper Pairs (CPs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Cooper pair insulator in amorphous films induced by nanometer-scale thickness variations|S. M. Hollen,H. Q. Nguyen,E. Rudisaile,M. D. Stewart Jr.,J. Shainline,J. M. Xu,J. M. Valles Jr###
(1404749, 1404749)
 Of primary interest here are proposals thatinsulating films near the IST<missing VAR>, which show an activated resistance and giantpositive magnetoresistance, contain islands of Cooper Pairs (CPs).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi
###Cooper pair insulator in amorphous films induced by nanometer-scale thickness variations|S. M. Hollen,H. Q. Nguyen,E. Rudisaile,M. D. Stewart Jr.,J. Shainline,J. M. Xu,J. M. Valles Jr###
(1404792, 1404792)
 Here wepresent evidence that these types of inhomogeneities are essential to such aninsulating phase in amorphous Bi (a-Bi) films deposited on substrates patternedwith nanometer-sized holes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi
###Cooper pair insulator in amorphous films induced by nanometer-scale thickness variations|S. M. Hollen,H. Q. Nguyen,E. Rudisaile,M. D. Stewart Jr.,J. Shainline,J. M. Xu,J. M. Valles Jr###
(1404797, 1404797)
 Here wepresent evidence that these types of inhomogeneities are essential to such aninsulating phase in amorphous Bi (a-Bi) films deposited on substrates patternedwith nanometer-sized holes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Cooper pair insulator in amorphous films induced by nanometer-scale thickness variations|S. M. Hollen,H. Q. Nguyen,E. Rudisaile,M. D. Stewart Jr.,J. Shainline,J. M. Xu,J. M. Valles Jr###
(1404868, 1404868)
 The patterning induces film thickness variations,and corresponding coupling constant variations, that transform the compositionof the insulator from localized electrons to CPs.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

IS
###Cooper pair insulator in amorphous films induced by nanometer-scale thickness variations|S. M. Hollen,H. Q. Nguyen,E. Rudisaile,M. D. Stewart Jr.,J. Shainline,J. M. Xu,J. M. Valles Jr###
(1404883, 1404884)
 Analyses near thethickness-tuned ISTs of films on nine different substrates show that weak linksbetween SC islands dominate the transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SC
###Cooper pair insulator in amorphous films induced by nanometer-scale thickness variations|S. M. Hollen,H. Q. Nguyen,E. Rudisaile,M. D. Stewart Jr.,J. Shainline,J. M. Xu,J. M. Valles Jr###
(1404910, 1404911)
 Analyses near thethickness-tuned ISTs of films on nine different substrates show that weak linksbetween SC islands dominate the transport.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Cooper pair insulator in amorphous films induced by nanometer-scale thickness variations|S. M. Hollen,H. Q. Nguyen,E. Rudisaile,M. D. Stewart Jr.,J. Shainline,J. M. Xu,J. M. Valles Jr###
(1404922, 1404922)
 In particular, the ISTs all occurwhen the link resistance approaches the resistance quantum for pairs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

IS
###Cooper pair insulator in amorphous films induced by nanometer-scale thickness variations|S. M. Hollen,H. Q. Nguyen,E. Rudisaile,M. D. Stewart Jr.,J. Shainline,J. M. Xu,J. M. Valles Jr###
(1404929, 1404930)
 In particular, the ISTs all occurwhen the link resistance approaches the resistance quantum for pairs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Cooper pair insulator in amorphous films induced by nanometer-scale thickness variations|S. M. Hollen,H. Q. Nguyen,E. Rudisaile,M. D. Stewart Jr.,J. Shainline,J. M. Xu,J. M. Valles Jr###
(1404976, 1404976)
 Theseobservations lead to a detailed picture of CPs localized by spatial variationsof the superconducting coupling constant.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Incoherent Effect of Fe and Ni Substitutions in the Ferromagnetic-Insulator La0.6Bi0.4MnO3+d|Asish K. Kundu,Md. Motin Seikh,Akhilesh Srivastava,S. Mahajan,R. Chatterjee,V. Pralong,B. Raveau###
(1405013, 1405013)
Incoherent Effect of Fe and Ni Substitutions in the Ferromagnetic-Insulator La0.6Bi0.4MnO3d<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 115, 'K', 3],[290.0, 82, 'meV', 6],[322.0, 7, 'Tesla', 7],[363.0, 125, 'K', 7]

Ni
###Incoherent Effect of Fe and Ni Substitutions in the Ferromagnetic-Insulator La0.6Bi0.4MnO3+d|Asish K. Kundu,Md. Motin Seikh,Akhilesh Srivastava,S. Mahajan,R. Chatterjee,V. Pralong,B. Raveau###
(1405017, 1405017)
Incoherent Effect of Fe and Ni Substitutions in the Ferromagnetic-Insulator La0.6Bi0.4MnO3d<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 115, 'K', 3],[286.0, 82, 'meV', 6],[318.0, 7, 'Tesla', 7],[359.0, 125, 'K', 7]

La0.6Bi0.4MnO3
###Incoherent Effect of Fe and Ni Substitutions in the Ferromagnetic-Insulator La0.6Bi0.4MnO3+d|Asish K. Kundu,Md. Motin Seikh,Akhilesh Srivastava,S. Mahajan,R. Chatterjee,V. Pralong,B. Raveau###
(1405029, 1405035)
Incoherent Effect of Fe and Ni Substitutions in the Ferromagnetic-Insulator La0.6Bi0.4MnO3d<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.12,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 115, 'K', 3],[268.0, 82, 'meV', 6],[300.0, 7, 'Tesla', 7],[341.0, 125, 'K', 7]

Fe
###Incoherent Effect of Fe and Ni Substitutions in the Ferromagnetic-Insulator La0.6Bi0.4MnO3+d|Asish K. Kundu,Md. Motin Seikh,Akhilesh Srivastava,S. Mahajan,R. Chatterjee,V. Pralong,B. Raveau###
(1405053, 1405053)
 A comparative study of the effect of Fe and Ni doping on the bismuth basedperovskite La0.6Bi0.4MnO3.1, a projected spintronics magnetic semiconductor hasbeen carried out.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 115, 'K', 2],[250.0, 82, 'meV', 5],[282.0, 7, 'Tesla', 6],[323.0, 125, 'K', 6]

Ni
###Incoherent Effect of Fe and Ni Substitutions in the Ferromagnetic-Insulator La0.6Bi0.4MnO3+d|Asish K. Kundu,Md. Motin Seikh,Akhilesh Srivastava,S. Mahajan,R. Chatterjee,V. Pralong,B. Raveau###
(1405057, 1405057)
 A comparative study of the effect of Fe and Ni doping on the bismuth basedperovskite La0.6Bi0.4MnO3.1, a projected spintronics magnetic semiconductor hasbeen carried out.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 115, 'K', 2],[246.0, 82, 'meV', 5],[278.0, 7, 'Tesla', 6],[319.0, 125, 'K', 6]

La0.6Bi0.4MnO3.1
###Incoherent Effect of Fe and Ni Substitutions in the Ferromagnetic-Insulator La0.6Bi0.4MnO3+d|Asish K. Kundu,Md. Motin Seikh,Akhilesh Srivastava,S. Mahajan,R. Chatterjee,V. Pralong,B. Raveau###
(1405072, 1405078)
 A comparative study of the effect of Fe and Ni doping on the bismuth basedperovskite La0.6Bi0.4MnO3.1, a projected spintronics magnetic semiconductor hasbeen carried out.
Featurization terminated normally.
0,0,0,0,0,0,0,0.607843137254902,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.19607843137254904,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.11764705882352941,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07843137254901962,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 115, 'K', 2],[225.0, 82, 'meV', 5],[257.0, 7, 'Tesla', 6],[298.0, 125, 'K', 6]

C
###Incoherent Effect of Fe and Ni Substitutions in the Ferromagnetic-Insulator La0.6Bi0.4MnO3+d|Asish K. Kundu,Md. Motin Seikh,Akhilesh Srivastava,S. Mahajan,R. Chatterjee,V. Pralong,B. Raveau###
(1405140, 1405140)
 However, the shifts in ferromagnetic transition (T<missing VAR>C) ofthese doped phases are in opposite direction with respect to the parent phaseT<missing VAR>C of 115 K.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 115, 'K', 0],[163.0, 82, 'meV', 3],[195.0, 7, 'Tesla', 4],[236.0, 125, 'K', 4]

C
###Incoherent Effect of Fe and Ni Substitutions in the Ferromagnetic-Insulator La0.6Bi0.4MnO3+d|Asish K. Kundu,Md. Motin Seikh,Akhilesh Srivastava,S. Mahajan,R. Chatterjee,V. Pralong,B. Raveau###
(1405174, 1405174)
 However, the shifts in ferromagnetic transition (T<missing VAR>C) ofthese doped phases are in opposite direction with respect to the parent phaseT<missing VAR>C of 115 K.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 115, 'K', 0],[129.0, 82, 'meV', 3],[161.0, 7, 'Tesla', 4],[202.0, 125, 'K', 4]

Ni
###Incoherent Effect of Fe and Ni Substitutions in the Ferromagnetic-Insulator La0.6Bi0.4MnO3+d|Asish K. Kundu,Md. Motin Seikh,Akhilesh Srivastava,S. Mahajan,R. Chatterjee,V. Pralong,B. Raveau###
(1405182, 1405182)
 The Ni-doped phase shows an increase in T<missing VAR>C 200 K, whereas theFe-doped phase exhibits a downward shift to T<missing VAR>C95 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 115, 'K', 1],[121.0, 82, 'meV', 2],[153.0, 7, 'Tesla', 3],[194.0, 125, 'K', 3]

C
###Incoherent Effect of Fe and Ni Substitutions in the Ferromagnetic-Insulator La0.6Bi0.4MnO3+d|Asish K. Kundu,Md. Motin Seikh,Akhilesh Srivastava,S. Mahajan,R. Chatterjee,V. Pralong,B. Raveau###
(1405197, 1405197)
 The Ni-doped phase shows an increase in T<missing VAR>C 200 K, whereas theFe-doped phase exhibits a downward shift to T<missing VAR>C95 K.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 115, 'K', 1],[106.0, 82, 'meV', 2],[138.0, 7, 'Tesla', 3],[179.0, 125, 'K', 3]

K
###Incoherent Effect of Fe and Ni Substitutions in the Ferromagnetic-Insulator La0.6Bi0.4MnO3+d|Asish K. Kundu,Md. Motin Seikh,Akhilesh Srivastava,S. Mahajan,R. Chatterjee,V. Pralong,B. Raveau###
(1405201, 1405201)
 The Ni-doped phase shows an increase in T<missing VAR>C 200 K, whereas theFe-doped phase exhibits a downward shift to T<missing VAR>C95 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 115, 'K', 1],[102.0, 82, 'meV', 2],[134.0, 7, 'Tesla', 3],[175.0, 125, 'K', 3]

Fe
###Incoherent Effect of Fe and Ni Substitutions in the Ferromagnetic-Insulator La0.6Bi0.4MnO3+d|Asish K. Kundu,Md. Motin Seikh,Akhilesh Srivastava,S. Mahajan,R. Chatterjee,V. Pralong,B. Raveau###
(1405209, 1405209)
 The Ni-doped phase shows an increase in T<missing VAR>C 200 K, whereas theFe-doped phase exhibits a downward shift to T<missing VAR>C95 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 115, 'K', 1],[94.0, 82, 'meV', 2],[126.0, 7, 'Tesla', 3],[167.0, 125, 'K', 3]

C95
###Incoherent Effect of Fe and Ni Substitutions in the Ferromagnetic-Insulator La0.6Bi0.4MnO3+d|Asish K. Kundu,Md. Motin Seikh,Akhilesh Srivastava,S. Mahajan,R. Chatterjee,V. Pralong,B. Raveau###
(1405226, 1405227)
 The Ni-doped phase shows an increase in T<missing VAR>C 200 K, whereas theFe-doped phase exhibits a downward shift to T<missing VAR>C95 K.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 115, 'K', 1],[76.0, 82, 'meV', 2],[108.0, 7, 'Tesla', 3],[149.0, 125, 'K', 3]

K
###Incoherent Effect of Fe and Ni Substitutions in the Ferromagnetic-Insulator La0.6Bi0.4MnO3+d|Asish K. Kundu,Md. Motin Seikh,Akhilesh Srivastava,S. Mahajan,R. Chatterjee,V. Pralong,B. Raveau###
(1405229, 1405229)
 The Ni-doped phase shows an increase in T<missing VAR>C 200 K, whereas theFe-doped phase exhibits a downward shift to T<missing VAR>C95 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 115, 'K', 1],[74.0, 82, 'meV', 2],[106.0, 7, 'Tesla', 3],[147.0, 125, 'K', 3]

Fe
###Incoherent Effect of Fe and Ni Substitutions in the Ferromagnetic-Insulator La0.6Bi0.4MnO3+d|Asish K. Kundu,Md. Motin Seikh,Akhilesh Srivastava,S. Mahajan,R. Chatterjee,V. Pralong,B. Raveau###
(1405237, 1405237)
 Moreover, the Fe-doped ishard-type whereas the Ni-doped compound is soft-type ferromagnet.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 115, 'K', 2],[66.0, 82, 'meV', 1],[98.0, 7, 'Tesla', 2],[139.0, 125, 'K', 2]

Ni
###Incoherent Effect of Fe and Ni Substitutions in the Ferromagnetic-Insulator La0.6Bi0.4MnO3+d|Asish K. Kundu,Md. Motin Seikh,Akhilesh Srivastava,S. Mahajan,R. Chatterjee,V. Pralong,B. Raveau###
(1405252, 1405252)
 Moreover, the Fe-doped ishard-type whereas the Ni-doped compound is soft-type ferromagnet.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 115, 'K', 2],[51.0, 82, 'meV', 1],[83.0, 7, 'Tesla', 2],[124.0, 125, 'K', 2]

Fe
###Incoherent Effect of Fe and Ni Substitutions in the Ferromagnetic-Insulator La0.6Bi0.4MnO3+d|Asish K. Kundu,Md. Motin Seikh,Akhilesh Srivastava,S. Mahajan,R. Chatterjee,V. Pralong,B. Raveau###
(1405307, 1405307)
 It isobserved that the materials are semiconducting in the ferromagnetic phase withactivation energies of 77  82 meV for Fe  Ni-doped phases respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 115, 'K', 3],[4.0, 82, 'meV', 0],[28.0, 7, 'Tesla', 1],[69.0, 125, 'K', 1]

Ni
###Incoherent Effect of Fe and Ni Substitutions in the Ferromagnetic-Insulator La0.6Bi0.4MnO3+d|Asish K. Kundu,Md. Motin Seikh,Akhilesh Srivastava,S. Mahajan,R. Chatterjee,V. Pralong,B. Raveau###
(1405310, 1405310)
 It isobserved that the materials are semiconducting in the ferromagnetic phase withactivation energies of 77  82 meV for Fe  Ni-doped phases respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 115, 'K', 3],[7.0, 82, 'meV', 0],[25.0, 7, 'Tesla', 1],[66.0, 125, 'K', 1]

In
###Incoherent Effect of Fe and Ni Substitutions in the Ferromagnetic-Insulator La0.6Bi0.4MnO3+d|Asish K. Kundu,Md. Motin Seikh,Akhilesh Srivastava,S. Mahajan,R. Chatterjee,V. Pralong,B. Raveau###
(1405319, 1405319)
 Inthe presence of external magnetic field of 7 Tesla, they exhibit minor changesin the resistivity behaviours and the maximum isothermal magnetoresistance isaround -20 % at 125 K for the Ni-phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 115, 'K', 4],[16.0, 82, 'meV', 1],[16.0, 7, 'Tesla', 0],[57.0, 125, 'K', 0]

Ni
###Incoherent Effect of Fe and Ni Substitutions in the Ferromagnetic-Insulator La0.6Bi0.4MnO3+d|Asish K. Kundu,Md. Motin Seikh,Akhilesh Srivastava,S. Mahajan,R. Chatterjee,V. Pralong,B. Raveau###
(1405382, 1405382)
 Inthe presence of external magnetic field of 7 Tesla, they exhibit minor changesin the resistivity behaviours and the maximum isothermal magnetoresistance isaround -20 % at 125 K for the Ni-phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, 115, 'K', 4],[79.0, 82, 'meV', 1],[47.0, 7, 'Tesla', 0],[6.0, 125, 'K', 0]

In
###The Influence of Magnetic Anisotropy on the Kondo Effect and Spin-Polarized Transport through Magnetic Molecules, Adatoms and Quantum Dots|Maciej Misiorny,Ireneusz Weymann,Jozef Barnas###
(1405556, 1405556)
 Inparticular, the influence of spin-polarized transport through a local orbitalof the system and exchange coupling of conduction electrons to the systems<missing VAR>magnetic core on the Kondo effect is discussed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In2O3Sn
###Effect of hydrogen plasma treatment and oxygen deficiency on conducting properties of In$_2$O$_3$:Sn thin films|V. G. Kytin,V. A. Kulbachinskii,O. V. Reukova,Y. M. Galperin,T. H. Johansen,S. Diplas,A. G. Ulyashin###
(1405889, 1405893)
Effect of hydrogen plasma treatment and oxygen deficiency on conducting properties of In2O3Sn thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In2O3Sn
###Effect of hydrogen plasma treatment and oxygen deficiency on conducting properties of In$_2$O$_3$:Sn thin films|V. G. Kytin,V. A. Kulbachinskii,O. V. Reukova,Y. M. Galperin,T. H. Johansen,S. Diplas,A. G. Ulyashin###
(1405915, 1405919)
 Electrical conductivity, Hall effect and magnetoresistance of In2O3Snthin films deposited on a glass substrates at different temperatures and oxygenpressures, as well as the films treated in a hydrogen plasma, have beeninvestigated in the temperature range 1.5-300 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Effect of hydrogen plasma treatment and oxygen deficiency on conducting properties of In$_2$O$_3$:Sn thin films|V. G. Kytin,V. A. Kulbachinskii,O. V. Reukova,Y. M. Galperin,T. H. Johansen,S. Diplas,A. G. Ulyashin###
(1405990, 1405990)
 Electrical conductivity, Hall effect and magnetoresistance of In2O3Snthin films deposited on a glass substrates at different temperatures and oxygenpressures, as well as the films treated in a hydrogen plasma, have beeninvestigated in the temperature range 1.5-300 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In2O3Sn
###Effect of hydrogen plasma treatment and oxygen deficiency on conducting properties of In$_2$O$_3$:Sn thin films|V. G. Kytin,V. A. Kulbachinskii,O. V. Reukova,Y. M. Galperin,T. H. Johansen,S. Diplas,A. G. Ulyashin###
(1406035, 1406039)
 The observed temperaturedependences of resistivity were typical for metallic transport of electronsexcept temperature dependence of resistivity of the In2O3Sn filmdeposited in the oxygen deficient atmosphere.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Effect of hydrogen plasma treatment and oxygen deficiency on conducting properties of In$_2$O$_3$:Sn thin films|V. G. Kytin,V. A. Kulbachinskii,O. V. Reukova,Y. M. Galperin,T. H. Johansen,S. Diplas,A. G. Ulyashin###
(1406080, 1406080)
 The electron concentration andmobility for the film deposited at 230circC was larger than that for thefilm deposited nominally at room temperature.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Effect of hydrogen plasma treatment and oxygen deficiency on conducting properties of In$_2$O$_3$:Sn thin films|V. G. Kytin,V. A. Kulbachinskii,O. V. Reukova,Y. M. Galperin,T. H. Johansen,S. Diplas,A. G. Ulyashin###
(1406181, 1406181)
 Theelectrical measurements were accompanied by AFM<missing VAR> and SEM studies of structuralproperties, as well as by X<missing VAR>PS analysis.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Effect of hydrogen plasma treatment and oxygen deficiency on conducting properties of In$_2$O$_3$:Sn thin films|V. G. Kytin,V. A. Kulbachinskii,O. V. Reukova,Y. M. Galperin,T. H. Johansen,S. Diplas,A. G. Ulyashin###
(1406186, 1406186)
 Theelectrical measurements were accompanied by AFM<missing VAR> and SEM studies of structuralproperties, as well as by X<missing VAR>PS analysis.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PS
###Effect of hydrogen plasma treatment and oxygen deficiency on conducting properties of In$_2$O$_3$:Sn thin films|V. G. Kytin,V. A. Kulbachinskii,O. V. Reukova,Y. M. Galperin,T. H. Johansen,S. Diplas,A. G. Ulyashin###
(1406209, 1406210)
 Theelectrical measurements were accompanied by AFM<missing VAR> and SEM studies of structuralproperties, as well as by X<missing VAR>PS analysis.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Effect of hydrogen plasma treatment and oxygen deficiency on conducting properties of In$_2$O$_3$:Sn thin films|V. G. Kytin,V. A. Kulbachinskii,O. V. Reukova,Y. M. Galperin,T. H. Johansen,S. Diplas,A. G. Ulyashin###
(1406259, 1406259)
 Basic on structural and electricalmeasurements we conclude the reduction process initiated by the hydrogen plasmaprovides essential modification of the IT<missing VAR>O films surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Effect of hydrogen plasma treatment and oxygen deficiency on conducting properties of In$_2$O$_3$:Sn thin films|V. G. Kytin,V. A. Kulbachinskii,O. V. Reukova,Y. M. Galperin,T. H. Johansen,S. Diplas,A. G. Ulyashin###
(1406261, 1406261)
 Basic on structural and electricalmeasurements we conclude the reduction process initiated by the hydrogen plasmaprovides essential modification of the IT<missing VAR>O films surface.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Effect of hydrogen plasma treatment and oxygen deficiency on conducting properties of In$_2$O$_3$:Sn thin films|V. G. Kytin,V. A. Kulbachinskii,O. V. Reukova,Y. M. Galperin,T. H. Johansen,S. Diplas,A. G. Ulyashin###
(1406268, 1406268)
 At the same time,electrical properties of the remaining (located beneath the surface layer)parts of the IT<missing VAR>O films remain mostly unchangeable.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Effect of hydrogen plasma treatment and oxygen deficiency on conducting properties of In$_2$O$_3$:Sn thin films|V. G. Kytin,V. A. Kulbachinskii,O. V. Reukova,Y. M. Galperin,T. H. Johansen,S. Diplas,A. G. Ulyashin###
(1406307, 1406307)
 At the same time,electrical properties of the remaining (located beneath the surface layer)parts of the IT<missing VAR>O films remain mostly unchangeable.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Effect of hydrogen plasma treatment and oxygen deficiency on conducting properties of In$_2$O$_3$:Sn thin films|V. G. Kytin,V. A. Kulbachinskii,O. V. Reukova,Y. M. Galperin,T. H. Johansen,S. Diplas,A. G. Ulyashin###
(1406309, 1406309)
 At the same time,electrical properties of the remaining (located beneath the surface layer)parts of the IT<missing VAR>O films remain mostly unchangeable.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PS
###Effect of hydrogen plasma treatment and oxygen deficiency on conducting properties of In$_2$O$_3$:Sn thin films|V. G. Kytin,V. A. Kulbachinskii,O. V. Reukova,Y. M. Galperin,T. H. Johansen,S. Diplas,A. G. Ulyashin###
(1406321, 1406322)
 X<missing VAR>PS analysis shows thatgrown in situ oxygen deficient IT<missing VAR>O films have enhanced D<missing VAR>OS between the Fermilevel and the valence band edge.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Effect of hydrogen plasma treatment and oxygen deficiency on conducting properties of In$_2$O$_3$:Sn thin films|V. G. Kytin,V. A. Kulbachinskii,O. V. Reukova,Y. M. Galperin,T. H. Johansen,S. Diplas,A. G. Ulyashin###
(1406341, 1406341)
 X<missing VAR>PS analysis shows thatgrown in situ oxygen deficient IT<missing VAR>O films have enhanced D<missing VAR>OS between the Fermilevel and the valence band edge.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Effect of hydrogen plasma treatment and oxygen deficiency on conducting properties of In$_2$O$_3$:Sn thin films|V. G. Kytin,V. A. Kulbachinskii,O. V. Reukova,Y. M. Galperin,T. H. Johansen,S. Diplas,A. G. Ulyashin###
(1406343, 1406343)
 X<missing VAR>PS analysis shows thatgrown in situ oxygen deficient IT<missing VAR>O films have enhanced D<missing VAR>OS between the Fermilevel and the valence band edge.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OS
###Effect of hydrogen plasma treatment and oxygen deficiency on conducting properties of In$_2$O$_3$:Sn thin films|V. G. Kytin,V. A. Kulbachinskii,O. V. Reukova,Y. M. Galperin,T. H. Johansen,S. Diplas,A. G. Ulyashin###
(1406352, 1406353)
 X<missing VAR>PS analysis shows thatgrown in situ oxygen deficient IT<missing VAR>O films have enhanced D<missing VAR>OS between the Fermilevel and the valence band edge.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Effect of hydrogen plasma treatment and oxygen deficiency on conducting properties of In$_2$O$_3$:Sn thin films|V. G. Kytin,V. A. Kulbachinskii,O. V. Reukova,Y. M. Galperin,T. H. Johansen,S. Diplas,A. G. Ulyashin###
(1406404, 1406404)
 The extra localized states behave as acceptorsleading to a compensation of n<missing VAR>-type IT<missing VAR>O.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Effect of hydrogen plasma treatment and oxygen deficiency on conducting properties of In$_2$O$_3$:Sn thin films|V. G. Kytin,V. A. Kulbachinskii,O. V. Reukova,Y. M. Galperin,T. H. Johansen,S. Diplas,A. G. Ulyashin###
(1406406, 1406406)
 The extra localized states behave as acceptorsleading to a compensation of n<missing VAR>-type IT<missing VAR>O.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Seebeck Effect in Magnetic Tunnel Junctions|Marvin Walter,Jakob Walowski,Vladyslav Zbarsky,Markus Münzenberg,Markus Schäfers,Daniel Ebke,Günter Reiss,Andy Thomas,Patrick Peretzki,Michael Seibt,Jagadeesh S. Moodera,Michael Czerner,Michael Bachmann,Christian Heiliger###
(1406580, 1406580)
 In particular, the Seebeckcoefficient changes during the transition from a parallel to an antiparallelmagnetic configuration in a tunnel junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Seebeck Effect in Magnetic Tunnel Junctions|Marvin Walter,Jakob Walowski,Vladyslav Zbarsky,Markus Münzenberg,Markus Schäfers,Daniel Ebke,Günter Reiss,Andy Thomas,Patrick Peretzki,Michael Seibt,Jagadeesh S. Moodera,Michael Czerner,Michael Bachmann,Christian Heiliger###
(1406626, 1406626)
 In that respect, it is the analogto the tunneling magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V/K
###Seebeck Effect in Magnetic Tunnel Junctions|Marvin Walter,Jakob Walowski,Vladyslav Zbarsky,Markus Münzenberg,Markus Schäfers,Daniel Ebke,Günter Reiss,Andy Thomas,Patrick Peretzki,Michael Seibt,Jagadeesh S. Moodera,Michael Czerner,Michael Bachmann,Christian Heiliger###
(1406788, 1406790)
 Experimentally, we realized 8.8 % magneto-Seebeck effect, whichresults from a voltage change of about -8.7 muV/K from the antiparallel tothe parallel direction close to the predicted value of -12.1 muV/K.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

V/K
###Seebeck Effect in Magnetic Tunnel Junctions|Marvin Walter,Jakob Walowski,Vladyslav Zbarsky,Markus Münzenberg,Markus Schäfers,Daniel Ebke,Günter Reiss,Andy Thomas,Patrick Peretzki,Michael Seibt,Jagadeesh S. Moodera,Michael Czerner,Michael Bachmann,Christian Heiliger###
(1406823, 1406825)
 Experimentally, we realized 8.8 % magneto-Seebeck effect, whichresults from a voltage change of about -8.7 muV/K from the antiparallel tothe parallel direction close to the predicted value of -12.1 muV/K.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

S
###Sondheimer Oscillation as a Fingerprint of Surface Dirac Fermions|Heon-Jung Kim,Ki-Seok Kim,Mun Dae Kim,S. -J. Lee,J. -W. Han,A. Ohnishi,M. Kitaura,M. Sasaki,A. Kondo,K. Kindo###
(1406926, 1406926)
 Recently, angle-resolved photoemissionspectroscopy (ARPES) has revealed that semiconductors of Bi2Se3 andBi2Te3 belong to such a class of materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[252.0, 1, 'T', 6],[274.0, 3, 'T', 6],[277.0, 4, 'T', 6]

Bi2Se3
###Sondheimer Oscillation as a Fingerprint of Surface Dirac Fermions|Heon-Jung Kim,Ki-Seok Kim,Mun Dae Kim,S. -J. Lee,J. -W. Han,A. Ohnishi,M. Kitaura,M. Sasaki,A. Kondo,K. Kindo###
(1406939, 1406942)
 Recently, angle-resolved photoemissionspectroscopy (ARPES) has revealed that semiconductors of Bi2Se3 andBi2Te3 belong to such a class of materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[236.0, 1, 'T', 6],[258.0, 3, 'T', 6],[261.0, 4, 'T', 6]

Bi2Te3
###Sondheimer Oscillation as a Fingerprint of Surface Dirac Fermions|Heon-Jung Kim,Ki-Seok Kim,Mun Dae Kim,S. -J. Lee,J. -W. Han,A. Ohnishi,M. Kitaura,M. Sasaki,A. Kondo,K. Kindo###
(1406947, 1406950)
 Recently, angle-resolved photoemissionspectroscopy (ARPES) has revealed that semiconductors of Bi2Se3 andBi2Te3 belong to such a class of materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[228.0, 1, 'T', 6],[250.0, 3, 'T', 6],[253.0, 4, 'T', 6]

Bi2Te3
###Sondheimer Oscillation as a Fingerprint of Surface Dirac Fermions|Heon-Jung Kim,Ki-Seok Kim,Mun Dae Kim,S. -J. Lee,J. -W. Han,A. Ohnishi,M. Kitaura,M. Sasaki,A. Kondo,K. Kindo###
(1407002, 1407005)
 Here, we presentundisputable evidence for the existence of gapless surface Dirac fermions fromtransport in Bi2Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 1, 'T', 5],[195.0, 3, 'T', 5],[198.0, 4, 'T', 5]

In
###Sondheimer Oscillation as a Fingerprint of Surface Dirac Fermions|Heon-Jung Kim,Ki-Seok Kim,Mun Dae Kim,S. -J. Lee,J. -W. Han,A. Ohnishi,M. Kitaura,M. Sasaki,A. Kondo,K. Kindo###
(1407104, 1407104)
 In addition, we uncover the topological nature ofthe surface state, fitting consistently both the non-oscillatory part of MR andthe Hall resistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 1, 'T', 1],[96.0, 3, 'T', 1],[99.0, 4, 'T', 1]

BaFe12O19
###Crossover between different regimes of inhomogeneous superconductivity in planar superconductor-ferromagnet hybrids|A. Yu. Aladyshkin,J. Fritzsche,R. Werner,R. B. G. Kramer,S. Guenon,R. Kleiner,D. Koelle,V. V. Moshchalkov###
(1407268, 1407272)
 We studied experimentally the effect of a stripe-like domain structure in aferromagnetic BaFe12O19 substrate on the magnetoresistance of asuperconducting Pb microbridge.
Featurization terminated normally.
0,0,0,0,0,0,0,0.59375,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.375,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.03125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[211.0, 2, '<', 3]

Pb
###Crossover between different regimes of inhomogeneous superconductivity in planar superconductor-ferromagnet hybrids|A. Yu. Aladyshkin,J. Fritzsche,R. Werner,R. B. G. Kramer,S. Guenon,R. Kleiner,D. Koelle,V. V. Moshchalkov###
(1407289, 1407289)
 We studied experimentally the effect of a stripe-like domain structure in aferromagnetic BaFe12O19 substrate on the magnetoresistance of asuperconducting Pb microbridge.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[194.0, 2, '<', 3]

B0
###Crossover between different regimes of inhomogeneous superconductivity in planar superconductor-ferromagnet hybrids|A. Yu. Aladyshkin,J. Fritzsche,R. Werner,R. B. G. Kramer,S. Guenon,R. Kleiner,D. Koelle,V. V. Moshchalkov###
(1407366, 1407367)
 It is demonstrated thatdepending on the ratio between the amplitude of the nonuniform magnetic fieldB0, induced by the ferromagnet, and the upper critical field Hc<missing VAR>2 of thesuperconducting material, the regions of the reverse-domain superconductivityin the H-T<missing VAR> plane can be isolated or can overlap (H is the external magneticfield, T<missing VAR> is temperature).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 2, '<', 1]

H
###Crossover between different regimes of inhomogeneous superconductivity in planar superconductor-ferromagnet hybrids|A. Yu. Aladyshkin,J. Fritzsche,R. Werner,R. B. G. Kramer,S. Guenon,R. Kleiner,D. Koelle,V. V. Moshchalkov###
(1407389, 1407389)
 It is demonstrated thatdepending on the ratio between the amplitude of the nonuniform magnetic fieldB0, induced by the ferromagnet, and the upper critical field Hc<missing VAR>2 of thesuperconducting material, the regions of the reverse-domain superconductivityin the H-T<missing VAR> plane can be isolated or can overlap (H is the external magneticfield, T<missing VAR> is temperature).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 2, '<', 1]

H
###Crossover between different regimes of inhomogeneous superconductivity in planar superconductor-ferromagnet hybrids|A. Yu. Aladyshkin,J. Fritzsche,R. Werner,R. B. G. Kramer,S. Guenon,R. Kleiner,D. Koelle,V. V. Moshchalkov###
(1407422, 1407422)
 It is demonstrated thatdepending on the ratio between the amplitude of the nonuniform magnetic fieldB0, induced by the ferromagnet, and the upper critical field Hc<missing VAR>2 of thesuperconducting material, the regions of the reverse-domain superconductivityin the H-T<missing VAR> plane can be isolated or can overlap (H is the external magneticfield, T<missing VAR> is temperature).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 2, '<', 1]

H
###Crossover between different regimes of inhomogeneous superconductivity in planar superconductor-ferromagnet hybrids|A. Yu. Aladyshkin,J. Fritzsche,R. Werner,R. B. G. Kramer,S. Guenon,R. Kleiner,D. Koelle,V. V. Moshchalkov###
(1407441, 1407441)
 It is demonstrated thatdepending on the ratio between the amplitude of the nonuniform magnetic fieldB0, induced by the ferromagnet, and the upper critical field Hc<missing VAR>2 of thesuperconducting material, the regions of the reverse-domain superconductivityin the H-T<missing VAR> plane can be isolated or can overlap (H is the external magneticfield, T<missing VAR> is temperature).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 2, '<', 1]

B0/H
###Crossover between different regimes of inhomogeneous superconductivity in planar superconductor-ferromagnet hybrids|A. Yu. Aladyshkin,J. Fritzsche,R. Werner,R. B. G. Kramer,S. Guenon,R. Kleiner,D. Koelle,V. V. Moshchalkov###
(1407478, 1407481)
 The latter case corresponds to the conditionB0/Hc<missing VAR>2<1 and results in the formation of superconductivity above themagnetic domains of both polarities.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[2.0, 2, '<', 0]

WN
###Correlated conformation and charge transport in multiwall carbon nanotube - conducting polymer nanocomposites|Paramita Kar Choudhury,S. Ramaprabhu,K. P. Ramesh,Reghu Menon###
(1407693, 1407694)
 The strikingly different charge transport behaviors in nanocomposites ofmultiwall carbon nanotubes (M<missing VAR>WNTs) and conducting polymer polyethylenedioxythiophene - polystyrene sulfonic acid (PEDOT<missing VAR>-PSS) at low temperatures areexplained by probing their conformational properties using small angle X<missing VAR>-rayscattering (SAX<missing VAR>S).
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[201.0, 4, 'K', 3],[216.0, 1, 'D', 3],[259.0, 5, 'nm', 3],[287.0, 4, 'K', 4]

P
###Correlated conformation and charge transport in multiwall carbon nanotube - conducting polymer nanocomposites|Paramita Kar Choudhury,S. Ramaprabhu,K. P. Ramesh,Reghu Menon###
(1407718, 1407718)
 The strikingly different charge transport behaviors in nanocomposites ofmultiwall carbon nanotubes (M<missing VAR>WNTs) and conducting polymer polyethylenedioxythiophene - polystyrene sulfonic acid (PEDOT<missing VAR>-PSS) at low temperatures areexplained by probing their conformational properties using small angle X<missing VAR>-rayscattering (SAX<missing VAR>S).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[177.0, 4, 'K', 3],[192.0, 1, 'D', 3],[235.0, 5, 'nm', 3],[263.0, 4, 'K', 4]

O
###Correlated conformation and charge transport in multiwall carbon nanotube - conducting polymer nanocomposites|Paramita Kar Choudhury,S. Ramaprabhu,K. P. Ramesh,Reghu Menon###
(1407721, 1407721)
 The strikingly different charge transport behaviors in nanocomposites ofmultiwall carbon nanotubes (M<missing VAR>WNTs) and conducting polymer polyethylenedioxythiophene - polystyrene sulfonic acid (PEDOT<missing VAR>-PSS) at low temperatures areexplained by probing their conformational properties using small angle X<missing VAR>-rayscattering (SAX<missing VAR>S).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[174.0, 4, 'K', 3],[189.0, 1, 'D', 3],[232.0, 5, 'nm', 3],[260.0, 4, 'K', 4]

S
###Correlated conformation and charge transport in multiwall carbon nanotube - conducting polymer nanocomposites|Paramita Kar Choudhury,S. Ramaprabhu,K. P. Ramesh,Reghu Menon###
(1407726, 1407726)
 The strikingly different charge transport behaviors in nanocomposites ofmultiwall carbon nanotubes (M<missing VAR>WNTs) and conducting polymer polyethylenedioxythiophene - polystyrene sulfonic acid (PEDOT<missing VAR>-PSS) at low temperatures areexplained by probing their conformational properties using small angle X<missing VAR>-rayscattering (SAX<missing VAR>S).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 4, 'K', 3],[184.0, 1, 'D', 3],[227.0, 5, 'nm', 3],[255.0, 4, 'K', 4]

S
###Correlated conformation and charge transport in multiwall carbon nanotube - conducting polymer nanocomposites|Paramita Kar Choudhury,S. Ramaprabhu,K. P. Ramesh,Reghu Menon###
(1407764, 1407764)
 The strikingly different charge transport behaviors in nanocomposites ofmultiwall carbon nanotubes (M<missing VAR>WNTs) and conducting polymer polyethylenedioxythiophene - polystyrene sulfonic acid (PEDOT<missing VAR>-PSS) at low temperatures areexplained by probing their conformational properties using small angle X<missing VAR>-rayscattering (SAX<missing VAR>S).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 4, 'K', 3],[146.0, 1, 'D', 3],[189.0, 5, 'nm', 3],[217.0, 4, 'K', 4]

S
###Correlated conformation and charge transport in multiwall carbon nanotube - conducting polymer nanocomposites|Paramita Kar Choudhury,S. Ramaprabhu,K. P. Ramesh,Reghu Menon###
(1407767, 1407767)
 The strikingly different charge transport behaviors in nanocomposites ofmultiwall carbon nanotubes (M<missing VAR>WNTs) and conducting polymer polyethylenedioxythiophene - polystyrene sulfonic acid (PEDOT<missing VAR>-PSS) at low temperatures areexplained by probing their conformational properties using small angle X<missing VAR>-rayscattering (SAX<missing VAR>S).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 4, 'K', 3],[143.0, 1, 'D', 3],[186.0, 5, 'nm', 3],[214.0, 4, 'K', 4]

S
###Correlated conformation and charge transport in multiwall carbon nanotube - conducting polymer nanocomposites|Paramita Kar Choudhury,S. Ramaprabhu,K. P. Ramesh,Reghu Menon###
(1407773, 1407773)
 The SAX<missing VAR>S studies indicate assembly of elongated PEDOT<missing VAR>-PSSglobules on the walls of nanotubes, coating them partially thereby limiting theinteraction between the nanotubes in the polymer matrix.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 4, 'K', 2],[137.0, 1, 'D', 2],[180.0, 5, 'nm', 2],[208.0, 4, 'K', 3]

S
###Correlated conformation and charge transport in multiwall carbon nanotube - conducting polymer nanocomposites|Paramita Kar Choudhury,S. Ramaprabhu,K. P. Ramesh,Reghu Menon###
(1407776, 1407776)
 The SAX<missing VAR>S studies indicate assembly of elongated PEDOT<missing VAR>-PSSglobules on the walls of nanotubes, coating them partially thereby limiting theinteraction between the nanotubes in the polymer matrix.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 4, 'K', 2],[134.0, 1, 'D', 2],[177.0, 5, 'nm', 2],[205.0, 4, 'K', 3]

P
###Correlated conformation and charge transport in multiwall carbon nanotube - conducting polymer nanocomposites|Paramita Kar Choudhury,S. Ramaprabhu,K. P. Ramesh,Reghu Menon###
(1407788, 1407788)
 The SAX<missing VAR>S studies indicate assembly of elongated PEDOT<missing VAR>-PSSglobules on the walls of nanotubes, coating them partially thereby limiting theinteraction between the nanotubes in the polymer matrix.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 4, 'K', 2],[122.0, 1, 'D', 2],[165.0, 5, 'nm', 2],[193.0, 4, 'K', 3]

O
###Correlated conformation and charge transport in multiwall carbon nanotube - conducting polymer nanocomposites|Paramita Kar Choudhury,S. Ramaprabhu,K. P. Ramesh,Reghu Menon###
(1407791, 1407791)
 The SAX<missing VAR>S studies indicate assembly of elongated PEDOT<missing VAR>-PSSglobules on the walls of nanotubes, coating them partially thereby limiting theinteraction between the nanotubes in the polymer matrix.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 4, 'K', 2],[119.0, 1, 'D', 2],[162.0, 5, 'nm', 2],[190.0, 4, 'K', 3]

PSS
###Correlated conformation and charge transport in multiwall carbon nanotube - conducting polymer nanocomposites|Paramita Kar Choudhury,S. Ramaprabhu,K. P. Ramesh,Reghu Menon###
(1407794, 1407796)
 The SAX<missing VAR>S studies indicate assembly of elongated PEDOT<missing VAR>-PSSglobules on the walls of nanotubes, coating them partially thereby limiting theinteraction between the nanotubes in the polymer matrix.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 4, 'K', 2],[114.0, 1, 'D', 2],[157.0, 5, 'nm', 2],[185.0, 4, 'K', 3]

WN
###Correlated conformation and charge transport in multiwall carbon nanotube - conducting polymer nanocomposites|Paramita Kar Choudhury,S. Ramaprabhu,K. P. Ramesh,Reghu Menon###
(1407885, 1407886)
 This results in acharge transport governed mainly by small polarons in the conducting polymerdespite the presence of metallic M<missing VAR>WNTs.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 4, 'K', 1],[24.0, 1, 'D', 1],[67.0, 5, 'nm', 1],[95.0, 4, 'K', 2]

At
###Correlated conformation and charge transport in multiwall carbon nanotube - conducting polymer nanocomposites|Paramita Kar Choudhury,S. Ramaprabhu,K. P. Ramesh,Reghu Menon###
(1407890, 1407890)
 At T<missing VAR> > 4 K, hopping of the chargecarriers following 1D-VR<missing VAR>H is evident which also gives rise to a positivemagnetoresistance (MR) with an enhanced localization length ( 5 nm) due to thepresence of M<missing VAR>WNTs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 4, 'K', 0],[20.0, 1, 'D', 0],[63.0, 5, 'nm', 0],[91.0, 4, 'K', 1]

V
###Correlated conformation and charge transport in multiwall carbon nanotube - conducting polymer nanocomposites|Paramita Kar Choudhury,S. Ramaprabhu,K. P. Ramesh,Reghu Menon###
(1407912, 1407912)
 At T<missing VAR> > 4 K, hopping of the chargecarriers following 1D-VR<missing VAR>H is evident which also gives rise to a positivemagnetoresistance (MR) with an enhanced localization length ( 5 nm) due to thepresence of M<missing VAR>WNTs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 4, 'K', 0],[2.0, 1, 'D', 0],[41.0, 5, 'nm', 0],[69.0, 4, 'K', 1]

H
###Correlated conformation and charge transport in multiwall carbon nanotube - conducting polymer nanocomposites|Paramita Kar Choudhury,S. Ramaprabhu,K. P. Ramesh,Reghu Menon###
(1407914, 1407914)
 At T<missing VAR> > 4 K, hopping of the chargecarriers following 1D-VR<missing VAR>H is evident which also gives rise to a positivemagnetoresistance (MR) with an enhanced localization length ( 5 nm) due to thepresence of M<missing VAR>WNTs.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 4, 'K', 0],[4.0, 1, 'D', 0],[39.0, 5, 'nm', 0],[67.0, 4, 'K', 1]

WN
###Correlated conformation and charge transport in multiwall carbon nanotube - conducting polymer nanocomposites|Paramita Kar Choudhury,S. Ramaprabhu,K. P. Ramesh,Reghu Menon###
(1407968, 1407969)
 At T<missing VAR> > 4 K, hopping of the chargecarriers following 1D-VR<missing VAR>H is evident which also gives rise to a positivemagnetoresistance (MR) with an enhanced localization length ( 5 nm) due to thepresence of M<missing VAR>WNTs.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 4, 'K', 0],[58.0, 1, 'D', 0],[15.0, 5, 'nm', 0],[12.0, 4, 'K', 1]

WN
###Correlated conformation and charge transport in multiwall carbon nanotube - conducting polymer nanocomposites|Paramita Kar Choudhury,S. Ramaprabhu,K. P. Ramesh,Reghu Menon###
(1408071, 1408072)
 The exceptionally large negative MR observed in thistemperature regime is conjectured to be due to the presence of quasi-1D MWNTsthat can aid in lowering the tunnelling barrier across the nanotube - polymerboundary resulting in large delocalization.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[176.0, 4, 'K', 2],[161.0, 1, 'D', 2],[118.0, 5, 'nm', 2],[90.0, 4, 'K', 1]

La2-x
###Conductance anisotropy and linear magnetoresistance in La2-xSrxCuO4 thin films|M. van Zalk,A. Brinkman,H. Hilgenkamp###
(1408134, 1408137)
Conductance anisotropy and linear magnetoresistance in La2-xSrxCuO4 thin films.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[290.0, 105, 'K', 6],[321.0, 0.25, 'a', 7],[357.0, 90, 'K', 7]

CuO4
###Conductance anisotropy and linear magnetoresistance in La2-xSrxCuO4 thin films|M. van Zalk,A. Brinkman,H. Hilgenkamp###
(1408139, 1408141)
Conductance anisotropy and linear magnetoresistance in La2-xSrxCuO4 thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[286.0, 105, 'K', 6],[317.0, 0.25, 'a', 7],[353.0, 90, 'K', 7]

La2-x
###Conductance anisotropy and linear magnetoresistance in La2-xSrxCuO4 thin films|M. van Zalk,A. Brinkman,H. Hilgenkamp###
(1408178, 1408181)
 We have performed a detailed study of conductance anisotropy andmagnetoresistance (MR) of La2-xSrxCuO4 (L<missing VAR>SCO) thin films (0.10 < x<missing VAR> < 0.25).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[246.0, 105, 'K', 5],[277.0, 0.25, 'a', 6],[313.0, 90, 'K', 6]

CuO4
###Conductance anisotropy and linear magnetoresistance in La2-xSrxCuO4 thin films|M. van Zalk,A. Brinkman,H. Hilgenkamp###
(1408183, 1408185)
 We have performed a detailed study of conductance anisotropy andmagnetoresistance (MR) of La2-xSrxCuO4 (L<missing VAR>SCO) thin films (0.10 < x<missing VAR> < 0.25).
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[242.0, 105, 'K', 5],[273.0, 0.25, 'a', 6],[309.0, 90, 'K', 6]

O
###Conductance anisotropy and linear magnetoresistance in La2-xSrxCuO4 thin films|M. van Zalk,A. Brinkman,H. Hilgenkamp###
(1408191, 1408191)
 We have performed a detailed study of conductance anisotropy andmagnetoresistance (MR) of La2-xSrxCuO4 (L<missing VAR>SCO) thin films (0.10 < x<missing VAR> < 0.25).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[236.0, 105, 'K', 5],[267.0, 0.25, 'a', 6],[303.0, 90, 'K', 6]

SCO
###Conductance anisotropy and linear magnetoresistance in La2-xSrxCuO4 thin films|M. van Zalk,A. Brinkman,H. Hilgenkamp###
(1408302, 1408304)
 It is demonstrated that the sign of Rxydepends on the orientation of the L<missing VAR>SCO Hall bar with respect to the terracestructure of the substrate.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 105, 'K', 2],[154.0, 0.25, 'a', 3],[190.0, 90, 'K', 3]

O3
###Conductance anisotropy and linear magnetoresistance in La2-xSrxCuO4 thin films|M. van Zalk,A. Brinkman,H. Hilgenkamp###
(1408412, 1408413)
 Weshow that the measurement of Rxy is sensitive enough to detect thecubic-tetragonal phase transition of the SrTiO3(100) (ST<missing VAR>O) substrate at 105 K.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 105, 'K', 0],[45.0, 0.25, 'a', 1],[81.0, 90, 'K', 1]

S
###Conductance anisotropy and linear magnetoresistance in La2-xSrxCuO4 thin films|M. van Zalk,A. Brinkman,H. Hilgenkamp###
(1408419, 1408419)
 Weshow that the measurement of Rxy is sensitive enough to detect thecubic-tetragonal phase transition of the SrTiO3(100) (ST<missing VAR>O) substrate at 105 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 105, 'K', 0],[39.0, 0.25, 'a', 1],[75.0, 90, 'K', 1]

O
###Conductance anisotropy and linear magnetoresistance in La2-xSrxCuO4 thin films|M. van Zalk,A. Brinkman,H. Hilgenkamp###
(1408421, 1408421)
 Weshow that the measurement of Rxy is sensitive enough to detect thecubic-tetragonal phase transition of the SrTiO3(100) (ST<missing VAR>O) substrate at 105 K.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 105, 'K', 0],[37.0, 0.25, 'a', 1],[73.0, 90, 'K', 1]

SCO
###Conductance anisotropy and linear magnetoresistance in La2-xSrxCuO4 thin films|M. van Zalk,A. Brinkman,H. Hilgenkamp###
(1408439, 1408441)
The MR of L<missing VAR>SCO thin films shows for 0.10 < x<missing VAR> < 0.25 a non-monotonic temperaturedependence, resulting from the onset of a linear term in the MR above 90 K.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 105, 'K', 1],[17.0, 0.25, 'a', 0],[53.0, 90, 'K', 0]

LaAlO3/SrTiO3
###Direct imaging of the coexistence of ferromagnetism and superconductivity at the LaAlO3/SrTiO3 interface|J. A. Bert,B. Kalisky,C. Bell,M. Kim,Y. Hikita,H. Y. Hwang,K. A. Moler###
(1408649, 1408657)
Direct imaging of the coexistence of ferromagnetism and superconductivity at the LaAlO3/SrTiO3 interface.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[94.0, 3, ',', 2],[131.0, 5, ',', 2],[309.0, 12, ',', 6],[375.0, 3, ',', 7],[377.0, 6, ',', 7],[404.0, 2, 'D', 7]

LaAlO3
###Direct imaging of the coexistence of ferromagnetism and superconductivity at the LaAlO3/SrTiO3 interface|J. A. Bert,B. Kalisky,C. Bell,M. Kim,Y. Hikita,H. Y. Hwang,K. A. Moler###
(1408662, 1408665)
 LaAlO3 and SrTiO3 are insulating, nonmagnetic oxides, yet the interfacebetween them exhibits a two-dimensional electron system with high electronmobility,1 superconductivity at low temperatures,2-6 and electric-field-tunedmetal-insulator and superconductorinsulator phase transitions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 3, ',', 1],[123.0, 5, ',', 1],[301.0, 12, ',', 5],[367.0, 3, ',', 6],[369.0, 6, ',', 6],[396.0, 2, 'D', 6]

SrTiO3
###Direct imaging of the coexistence of ferromagnetism and superconductivity at the LaAlO3/SrTiO3 interface|J. A. Bert,B. Kalisky,C. Bell,M. Kim,Y. Hikita,H. Y. Hwang,K. A. Moler###
(1408669, 1408672)
 LaAlO3 and SrTiO3 are insulating, nonmagnetic oxides, yet the interfacebetween them exhibits a two-dimensional electron system with high electronmobility,1 superconductivity at low temperatures,2-6 and electric-field-tunedmetal-insulator and superconductorinsulator phase transitions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 3, ',', 1],[116.0, 5, ',', 1],[294.0, 12, ',', 5],[360.0, 3, ',', 6],[362.0, 6, ',', 6],[389.0, 2, 'D', 6]

Ti
###Direct imaging of the coexistence of ferromagnetism and superconductivity at the LaAlO3/SrTiO3 interface|J. A. Bert,B. Kalisky,C. Bell,M. Kim,Y. Hikita,H. Y. Hwang,K. A. Moler###
(1408962, 1408962)
These results demonstrate the existence of nanoscale phase separation assuggested by theoretical predictions based on nearly degenerate interfacesub-bands associated with the Ti orbitals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[211.0, 3, ',', 3],[174.0, 5, ',', 3],[4.0, 12, ',', 1],[70.0, 3, ',', 2],[72.0, 6, ',', 2],[99.0, 2, 'D', 2]

In
###Direct imaging of the coexistence of ferromagnetism and superconductivity at the LaAlO3/SrTiO3 interface|J. A. Bert,B. Kalisky,C. Bell,M. Kim,Y. Hikita,H. Y. Hwang,K. A. Moler###
(1409038, 1409038)
3,6,7 In addition to the implications for magnetism, the existenceof a 2D superconductor at an interface with highly broken inversion symmetryand a ferromagnetic landscape in the background suggests the potential forexotic superconducting phenomena.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[287.0, 3, ',', 5],[250.0, 5, ',', 5],[72.0, 12, ',', 1],[6.0, 3, ',', 0],[4.0, 6, ',', 0],[23.0, 2, 'D', 0]

Fe49(Rh0.93Pd0.07)51
###First order antiferro-ferromagnetic transition in Fe49(Rh0.93Pd0.07)51 under simultaneous application of magnetic field and external pressure|Pallavi Kushwaha,Pallab Bag,R Rawat,P Chaddah###
(1409132, 1409140)
First order antiferro-ferromagnetic transition in Fe49(Rh0.93Pd0.07)51 under simultaneous application of magnetic field and external pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.49,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4743,0.0357,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 8, 'Tesla', 1],[238.0, 7.3, 'K', 3],[258.0, 12.8, 'K', 3]

H
###First order antiferro-ferromagnetic transition in Fe49(Rh0.93Pd0.07)51 under simultaneous application of magnetic field and external pressure|Pallavi Kushwaha,Pallab Bag,R Rawat,P Chaddah###
(1409172, 1409172)
 The magnetic field-pressure-temperature (H-P-T) phase diagram for first orderantiferromagnetic (AFM) to ferromagnetic (FM) transition inFe49(Rh0.93Pd0.07)51 has been constructed using resistivity measurements undersimultaneous application of magnetic field (up to 8 Tesla) and pressure (up to20 kbar).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 8, 'Tesla', 0],[206.0, 7.3, 'K', 2],[226.0, 12.8, 'K', 2]

P
###First order antiferro-ferromagnetic transition in Fe49(Rh0.93Pd0.07)51 under simultaneous application of magnetic field and external pressure|Pallavi Kushwaha,Pallab Bag,R Rawat,P Chaddah###
(1409174, 1409174)
 The magnetic field-pressure-temperature (H-P-T) phase diagram for first orderantiferromagnetic (AFM) to ferromagnetic (FM) transition inFe49(Rh0.93Pd0.07)51 has been constructed using resistivity measurements undersimultaneous application of magnetic field (up to 8 Tesla) and pressure (up to20 kbar).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 8, 'Tesla', 0],[204.0, 7.3, 'K', 2],[224.0, 12.8, 'K', 2]

F
###First order antiferro-ferromagnetic transition in Fe49(Rh0.93Pd0.07)51 under simultaneous application of magnetic field and external pressure|Pallavi Kushwaha,Pallab Bag,R Rawat,P Chaddah###
(1409194, 1409194)
 The magnetic field-pressure-temperature (H-P-T) phase diagram for first orderantiferromagnetic (AFM) to ferromagnetic (FM) transition inFe49(Rh0.93Pd0.07)51 has been constructed using resistivity measurements undersimultaneous application of magnetic field (up to 8 Tesla) and pressure (up to20 kbar).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 8, 'Tesla', 0],[184.0, 7.3, 'K', 2],[204.0, 12.8, 'K', 2]

F
###First order antiferro-ferromagnetic transition in Fe49(Rh0.93Pd0.07)51 under simultaneous application of magnetic field and external pressure|Pallavi Kushwaha,Pallab Bag,R Rawat,P Chaddah###
(1409203, 1409203)
 The magnetic field-pressure-temperature (H-P-T) phase diagram for first orderantiferromagnetic (AFM) to ferromagnetic (FM) transition inFe49(Rh0.93Pd0.07)51 has been constructed using resistivity measurements undersimultaneous application of magnetic field (up to 8 Tesla) and pressure (up to20 kbar).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 8, 'Tesla', 0],[175.0, 7.3, 'K', 2],[195.0, 12.8, 'K', 2]

Fe49(Rh0.93Pd0.07)51
###First order antiferro-ferromagnetic transition in Fe49(Rh0.93Pd0.07)51 under simultaneous application of magnetic field and external pressure|Pallavi Kushwaha,Pallab Bag,R Rawat,P Chaddah###
(1409212, 1409220)
 The magnetic field-pressure-temperature (H-P-T) phase diagram for first orderantiferromagnetic (AFM) to ferromagnetic (FM) transition inFe49(Rh0.93Pd0.07)51 has been constructed using resistivity measurements undersimultaneous application of magnetic field (up to 8 Tesla) and pressure (up to20 kbar).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.49,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4743,0.0357,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 8, 'Tesla', 0],[158.0, 7.3, 'K', 2],[178.0, 12.8, 'K', 2]

N
###First order antiferro-ferromagnetic transition in Fe49(Rh0.93Pd0.07)51 under simultaneous application of magnetic field and external pressure|Pallavi Kushwaha,Pallab Bag,R Rawat,P Chaddah###
(1409359, 1409359)
Consistent with existing literature the first order transition temperature (T<missing VAR>N)increases with the application of external pressure ( 7.3 K/ kbar) anddecreases with magnetic field ( - 12.8 K/Tesla).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 8, 'Tesla', 2],[19.0, 7.3, 'K', 0],[39.0, 12.8, 'K', 0]

H
###First order antiferro-ferromagnetic transition in Fe49(Rh0.93Pd0.07)51 under simultaneous application of magnetic field and external pressure|Pallavi Kushwaha,Pallab Bag,R Rawat,P Chaddah###
(1409485, 1409485)
 For this a setof H and P values are chosen for which T<missing VAR>N (H1, P1)  T<missing VAR>N (H2, P2).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[234.0, 8, 'Tesla', 4],[107.0, 7.3, 'K', 2],[87.0, 12.8, 'K', 2]

P
###First order antiferro-ferromagnetic transition in Fe49(Rh0.93Pd0.07)51 under simultaneous application of magnetic field and external pressure|Pallavi Kushwaha,Pallab Bag,R Rawat,P Chaddah###
(1409489, 1409489)
 For this a setof H and P values are chosen for which T<missing VAR>N (H1, P1)  T<missing VAR>N (H2, P2).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[238.0, 8, 'Tesla', 4],[111.0, 7.3, 'K', 2],[91.0, 12.8, 'K', 2]

N
###First order antiferro-ferromagnetic transition in Fe49(Rh0.93Pd0.07)51 under simultaneous application of magnetic field and external pressure|Pallavi Kushwaha,Pallab Bag,R Rawat,P Chaddah###
(1409502, 1409502)
 For this a setof H and P values are chosen for which T<missing VAR>N (H1, P1)  T<missing VAR>N (H2, P2).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[251.0, 8, 'Tesla', 4],[124.0, 7.3, 'K', 2],[104.0, 12.8, 'K', 2]

H1
###First order antiferro-ferromagnetic transition in Fe49(Rh0.93Pd0.07)51 under simultaneous application of magnetic field and external pressure|Pallavi Kushwaha,Pallab Bag,R Rawat,P Chaddah###
(1409505, 1409506)
 For this a setof H and P values are chosen for which T<missing VAR>N (H1, P1)  T<missing VAR>N (H2, P2).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[254.0, 8, 'Tesla', 4],[127.0, 7.3, 'K', 2],[107.0, 12.8, 'K', 2]

P1
###First order antiferro-ferromagnetic transition in Fe49(Rh0.93Pd0.07)51 under simultaneous application of magnetic field and external pressure|Pallavi Kushwaha,Pallab Bag,R Rawat,P Chaddah###
(1409509, 1409510)
 For this a setof H and P values are chosen for which T<missing VAR>N (H1, P1)  T<missing VAR>N (H2, P2).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[258.0, 8, 'Tesla', 4],[131.0, 7.3, 'K', 2],[111.0, 12.8, 'K', 2]

N
###First order antiferro-ferromagnetic transition in Fe49(Rh0.93Pd0.07)51 under simultaneous application of magnetic field and external pressure|Pallavi Kushwaha,Pallab Bag,R Rawat,P Chaddah###
(1409515, 1409515)
 For this a setof H and P values are chosen for which T<missing VAR>N (H1, P1)  T<missing VAR>N (H2, P2).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[264.0, 8, 'Tesla', 4],[137.0, 7.3, 'K', 2],[117.0, 12.8, 'K', 2]

H2
###First order antiferro-ferromagnetic transition in Fe49(Rh0.93Pd0.07)51 under simultaneous application of magnetic field and external pressure|Pallavi Kushwaha,Pallab Bag,R Rawat,P Chaddah###
(1409518, 1409519)
 For this a setof H and P values are chosen for which T<missing VAR>N (H1, P1)  T<missing VAR>N (H2, P2).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[267.0, 8, 'Tesla', 4],[140.0, 7.3, 'K', 2],[120.0, 12.8, 'K', 2]

P2
###First order antiferro-ferromagnetic transition in Fe49(Rh0.93Pd0.07)51 under simultaneous application of magnetic field and external pressure|Pallavi Kushwaha,Pallab Bag,R Rawat,P Chaddah###
(1409522, 1409523)
 For this a setof H and P values are chosen for which T<missing VAR>N (H1, P1)  T<missing VAR>N (H2, P2).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[271.0, 8, 'Tesla', 4],[144.0, 7.3, 'K', 2],[124.0, 12.8, 'K', 2]

H
###First order antiferro-ferromagnetic transition in Fe49(Rh0.93Pd0.07)51 under simultaneous application of magnetic field and external pressure|Pallavi Kushwaha,Pallab Bag,R Rawat,P Chaddah###
(1409538, 1409538)
 Measurementsfor such combinations of H and P show that the temperature dependence ofresistivity is similar i.e.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[287.0, 8, 'Tesla', 5],[160.0, 7.3, 'K', 3],[140.0, 12.8, 'K', 3]

P
###First order antiferro-ferromagnetic transition in Fe49(Rh0.93Pd0.07)51 under simultaneous application of magnetic field and external pressure|Pallavi Kushwaha,Pallab Bag,R Rawat,P Chaddah###
(1409542, 1409542)
 Measurementsfor such combinations of H and P show that the temperature dependence ofresistivity is similar i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[291.0, 8, 'Tesla', 5],[164.0, 7.3, 'K', 3],[144.0, 12.8, 'K', 3]

H
###First order antiferro-ferromagnetic transition in Fe49(Rh0.93Pd0.07)51 under simultaneous application of magnetic field and external pressure|Pallavi Kushwaha,Pallab Bag,R Rawat,P Chaddah###
(1409601, 1409601)
 the broadening (in temperature) of transition aswell as extent of hysteresis remains independent of H and P.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[350.0, 8, 'Tesla', 6],[223.0, 7.3, 'K', 4],[203.0, 12.8, 'K', 4]

P
###First order antiferro-ferromagnetic transition in Fe49(Rh0.93Pd0.07)51 under simultaneous application of magnetic field and external pressure|Pallavi Kushwaha,Pallab Bag,R Rawat,P Chaddah###
(1409605, 1409605)
 the broadening (in temperature) of transition aswell as extent of hysteresis remains independent of H and P.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[354.0, 8, 'Tesla', 6],[227.0, 7.3, 'K', 4],[207.0, 12.8, 'K', 4]

F
###First order antiferro-ferromagnetic transition in Fe49(Rh0.93Pd0.07)51 under simultaneous application of magnetic field and external pressure|Pallavi Kushwaha,Pallab Bag,R Rawat,P Chaddah###
(1409661, 1409661)
 Isothermalmagnetoresistance measurement under various constant pressure show that eventhough the critical field required for AFM<missing VAR>-FM<missing VAR> transition depends on appliedpressure, the hysteresis as well as transition width (in magnetic field) bothremains independent of pressure, consistent with our conclusions drawn fromrho-T<missing VAR> measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[410.0, 8, 'Tesla', 8],[283.0, 7.3, 'K', 6],[263.0, 12.8, 'K', 6]

F
###First order antiferro-ferromagnetic transition in Fe49(Rh0.93Pd0.07)51 under simultaneous application of magnetic field and external pressure|Pallavi Kushwaha,Pallab Bag,R Rawat,P Chaddah###
(1409664, 1409664)
 Isothermalmagnetoresistance measurement under various constant pressure show that eventhough the critical field required for AFM<missing VAR>-FM<missing VAR> transition depends on appliedpressure, the hysteresis as well as transition width (in magnetic field) bothremains independent of pressure, consistent with our conclusions drawn fromrho-T<missing VAR> measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[413.0, 8, 'Tesla', 8],[286.0, 7.3, 'K', 6],[266.0, 12.8, 'K', 6]

As
###Observation of Quantum Interference in Molecular Charge Transport|Constant M. Guedon,Hennie Valkenier,Troels Markussen,Kristian S. Thygesen,Jan C. Hummelen,Sense Jan van der Molen###
(1409758, 1409758)
 As the dimensions of a conductor approach the nano-scale, quantum effectswill begin to dominate its behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[232.0, 300, 'K', 5]

As
###Observation of Quantum Interference in Molecular Charge Transport|Constant M. Guedon,Hennie Valkenier,Troels Markussen,Kristian S. Thygesen,Jan C. Hummelen,Sense Jan van der Molen###
(1409948, 1409948)
 Asmolecules are nano-scale objects with typical energy level spacings (e<missing VAR>V) muchlarger than the thermal energy at 300 K (25 meV), they are natural candidatesto enable such a break-through.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 300, 'K', 0]

V
###Observation of Quantum Interference in Molecular Charge Transport|Constant M. Guedon,Hennie Valkenier,Troels Markussen,Kristian S. Thygesen,Jan C. Hummelen,Sense Jan van der Molen###
(1409973, 1409973)
 Asmolecules are nano-scale objects with typical energy level spacings (e<missing VAR>V) muchlarger than the thermal energy at 300 K (25 meV), they are natural candidatesto enable such a break-through.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 300, 'K', 0]

V
###Observation of Quantum Interference in Molecular Charge Transport|Constant M. Guedon,Hennie Valkenier,Troels Markussen,Kristian S. Thygesen,Jan C. Hummelen,Sense Jan van der Molen###
(1409996, 1409996)
 Asmolecules are nano-scale objects with typical energy level spacings (e<missing VAR>V) muchlarger than the thermal energy at 300 K (25 meV), they are natural candidatesto enable such a break-through.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 300, 'K', 0]

Si
###Influence of spin polarization on resistivity of a two-dimensional electron gas in Si MOSFET at metallic densities|I. Shlimak,A. Butenko,D. I. Golosov,K. -J. Friedland,S. V. Kravchenko###
(1410694, 1410694)
Influence of spin polarization on resistivity of a two-dimensional electron gas in Si M<missing VAR>OSFET at metallic densities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OSF
###Influence of spin polarization on resistivity of a two-dimensional electron gas in Si MOSFET at metallic densities|I. Shlimak,A. Butenko,D. I. Golosov,K. -J. Friedland,S. V. Kravchenko###
(1410697, 1410699)
Influence of spin polarization on resistivity of a two-dimensional electron gas in Si M<missing VAR>OSFET at metallic densities.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Influence of spin polarization on resistivity of a two-dimensional electron gas in Si MOSFET at metallic densities|I. Shlimak,A. Butenko,D. I. Golosov,K. -J. Friedland,S. V. Kravchenko###
(1410715, 1410715)
 Positive magnetoresistance (PMR) of a silicon M<missing VAR>OSFET in parallel magneticfields B has been measured at high electron densities n<missing VAR> >> nc where nc is thecritical density of the metal-insulator transition (MIT).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OSF
###Influence of spin polarization on resistivity of a two-dimensional electron gas in Si MOSFET at metallic densities|I. Shlimak,A. Butenko,D. I. Golosov,K. -J. Friedland,S. V. Kravchenko###
(1410727, 1410729)
 Positive magnetoresistance (PMR) of a silicon M<missing VAR>OSFET in parallel magneticfields B has been measured at high electron densities n<missing VAR> >> nc where nc is thecritical density of the metal-insulator transition (MIT).
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Influence of spin polarization on resistivity of a two-dimensional electron gas in Si MOSFET at metallic densities|I. Shlimak,A. Butenko,D. I. Golosov,K. -J. Friedland,S. V. Kravchenko###
(1410742, 1410742)
 Positive magnetoresistance (PMR) of a silicon M<missing VAR>OSFET in parallel magneticfields B has been measured at high electron densities n<missing VAR> >> nc where nc is thecritical density of the metal-insulator transition (MIT).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Influence of spin polarization on resistivity of a two-dimensional electron gas in Si MOSFET at metallic densities|I. Shlimak,A. Butenko,D. I. Golosov,K. -J. Friedland,S. V. Kravchenko###
(1410810, 1410810)
 It turns out that thenormalized PMR curves, R<missing VAR>(B)/R<missing VAR>(0), merge together when the field is scaledaccording to B/Bc(n) where Bc<missing VAR> is the field in which electrons become fullyspin polarized.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(B)
###Influence of spin polarization on resistivity of a two-dimensional electron gas in Si MOSFET at metallic densities|I. Shlimak,A. Butenko,D. I. Golosov,K. -J. Friedland,S. V. Kravchenko###
(1410818, 1410820)
 It turns out that thenormalized PMR curves, R<missing VAR>(B)/R<missing VAR>(0), merge together when the field is scaledaccording to B/Bc(n) where Bc<missing VAR> is the field in which electrons become fullyspin polarized.
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B/B
###Influence of spin polarization on resistivity of a two-dimensional electron gas in Si MOSFET at metallic densities|I. Shlimak,A. Butenko,D. I. Golosov,K. -J. Friedland,S. V. Kravchenko###
(1410847, 1410849)
 It turns out that thenormalized PMR curves, R<missing VAR>(B)/R<missing VAR>(0), merge together when the field is scaledaccording to B/Bc(n) where Bc<missing VAR> is the field in which electrons become fullyspin polarized.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

B
###Influence of spin polarization on resistivity of a two-dimensional electron gas in Si MOSFET at metallic densities|I. Shlimak,A. Butenko,D. I. Golosov,K. -J. Friedland,S. V. Kravchenko###
(1410857, 1410857)
 It turns out that thenormalized PMR curves, R<missing VAR>(B)/R<missing VAR>(0), merge together when the field is scaledaccording to B/Bc(n) where Bc<missing VAR> is the field in which electrons become fullyspin polarized.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Influence of spin polarization on resistivity of a two-dimensional electron gas in Si MOSFET at metallic densities|I. Shlimak,A. Butenko,D. I. Golosov,K. -J. Friedland,S. V. Kravchenko###
(1410888, 1410888)
 The values of Bc<missing VAR> have been calculated from the simple equalitybetween the Zeeman splitting energy and the Fermi energy taking into accountthe experimentally measured dependence of the spin susceptibility on theelectron density.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Influence of spin polarization on resistivity of a two-dimensional electron gas in Si MOSFET at metallic densities|I. Shlimak,A. Butenko,D. I. Golosov,K. -J. Friedland,S. V. Kravchenko###
(1411011, 1411011)
 The subsequent analysis of PMRfor low n<missing VAR> > nc demonstrated that the merging of the initial parts of curvescan bee achieved only with taking into account the temperature dependence ofBc<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Influence of spin polarization on resistivity of a two-dimensional electron gas in Si MOSFET at metallic densities|I. Shlimak,A. Butenko,D. I. Golosov,K. -J. Friedland,S. V. Kravchenko###
(1411073, 1411073)
 The subsequent analysis of PMRfor low n<missing VAR> > nc demonstrated that the merging of the initial parts of curvescan bee achieved only with taking into account the temperature dependence ofBc<missing VAR>.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Influence of spin polarization on resistivity of a two-dimensional electron gas in Si MOSFET at metallic densities|I. Shlimak,A. Butenko,D. I. Golosov,K. -J. Friedland,S. V. Kravchenko###
(1411095, 1411095)
 It is also shown that the shape of the PMR curves at strong magneticfields is affected by a crossover from a purely two-dimensional (2D) electrontransport to a regime where out-of-plane carrier motion becomes important(quasi-three-dimensional regime).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ErMnO3
###Anisotropic conductance at improper ferroelectric domain walls|Dennis Meier,Jan Seidel,Andres Cano,Kris Delaney,Yu Kumagai,Maxim Mostovoy,Nicola A. Spaldin,Ramamoorthy Ramesh,Manfred Fiebig###
(1411458, 1411461)
 We show that the electrical conductance at theinterfacial ferroelectric domain walls in hexagonal ErMnO3 is a continuousfunction of the domain wall orientation, with a range of an order of magnitude.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ErMnO3
###Anisotropic conductance at improper ferroelectric domain walls|Dennis Meier,Jan Seidel,Andres Cano,Kris Delaney,Yu Kumagai,Maxim Mostovoy,Nicola A. Spaldin,Ramamoorthy Ramesh,Manfred Fiebig###
(1411566, 1411569)
We explain the observed behaviour using first-principles density functional andphenomenological theories, and relate it to the unexpected stability ofhead-to-head and tail-to-tail domain walls in ErMnO3 and related hexagonalmanganites.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

UCF
###Universal conductance fluctuations in indium tin oxide nanowires|Ping-Yu Yang,L. Y. Wang,Yao-Wen Hsu,Juhn-Jong Lin###
(1411681, 1411683)
 Magnetic field dependent universal conductance fluctuations (UCFs) areobserved in weakly disordered indium tin oxide nanowires from 0.26 K up tosim 25 K.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[24.0, 0.26, 'K', 0],[235.0, 37, ',', 10]

K
###Universal conductance fluctuations in indium tin oxide nanowires|Ping-Yu Yang,L. Y. Wang,Yao-Wen Hsu,Juhn-Jong Lin###
(1411718, 1411718)
 Magnetic field dependent universal conductance fluctuations (UCFs) areobserved in weakly disordered indium tin oxide nanowires from 0.26 K up tosim 25 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 0.26, 'K', 0],[200.0, 37, ',', 10]

K
###Universal conductance fluctuations in indium tin oxide nanowires|Ping-Yu Yang,L. Y. Wang,Yao-Wen Hsu,Juhn-Jong Lin###
(1411758, 1411758)
 The fluctuation magnitudes increase with decreasing temperature,reaching a fraction of e<missing VAR>2/h<missing VAR> at T<missing VAR> lesssim 1 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 0.26, 'K', 1],[160.0, 37, ',', 9]

UCF
###Universal conductance fluctuations in indium tin oxide nanowires|Ping-Yu Yang,L. Y. Wang,Yao-Wen Hsu,Juhn-Jong Lin###
(1411769, 1411771)
 The shape of the UCFpatterns is found to be very sensitive to thermal cycling of the sample to roomtemperatures, which induces irreversible impurity reconfigurations.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[62.0, 0.26, 'K', 2],[147.0, 37, ',', 8]

UCF
###Universal conductance fluctuations in indium tin oxide nanowires|Ping-Yu Yang,L. Y. Wang,Yao-Wen Hsu,Juhn-Jong Lin###
(1411831, 1411833)
 On theother hand, the UCF magnitudes are insensitive to thermal cycling.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[124.0, 0.26, 'K', 3],[85.0, 37, ',', 7]

UCF
###Universal conductance fluctuations in indium tin oxide nanowires|Ping-Yu Yang,L. Y. Wang,Yao-Wen Hsu,Juhn-Jong Lin###
(1411867, 1411869)
 Our measuredtemperature dependence of the root-mean-square UCF magnitudes are compared withthe existing theory [C.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[160.0, 0.26, 'K', 4],[49.0, 37, ',', 6]

C
###Universal conductance fluctuations in indium tin oxide nanowires|Ping-Yu Yang,L. Y. Wang,Yao-Wen Hsu,Juhn-Jong Lin###
(1411887, 1411887)
 Our measuredtemperature dependence of the root-mean-square UCF magnitudes are compared withthe existing theory [C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[180.0, 0.26, 'K', 4],[31.0, 37, ',', 6]

W
###Universal conductance fluctuations in indium tin oxide nanowires|Ping-Yu Yang,L. Y. Wang,Yao-Wen Hsu,Juhn-Jong Lin###
(1411890, 1411890)
 W.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[183.0, 0.26, 'K', 5],[28.0, 37, ',', 5]

H
###Universal conductance fluctuations in indium tin oxide nanowires|Ping-Yu Yang,L. Y. Wang,Yao-Wen Hsu,Juhn-Jong Lin###
(1411900, 1411900)
 Beenakker and H.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[193.0, 0.26, 'K', 7],[18.0, 37, ',', 3]

B
###Universal conductance fluctuations in indium tin oxide nanowires|Ping-Yu Yang,L. Y. Wang,Yao-Wen Hsu,Juhn-Jong Lin###
(1411914, 1411914)
 Btextbf37, 6544 (1988)].
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[207.0, 0.26, 'K', 10],[4.0, 37, ',', 0]

UCF
###Universal conductance fluctuations in indium tin oxide nanowires|Ping-Yu Yang,L. Y. Wang,Yao-Wen Hsu,Juhn-Jong Lin###
(1411955, 1411957)
 A notable discrepancy is found, which seems to implythat the experimental UCFs<missing VAR> are not cut off by the thermal diffusion lengthLT, as would be expected by the theoretical prediction when LT <L<missing VAR>varphi, where L<missing VAR>varphi is the electron dephasing length.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[248.0, 0.26, 'K', 11],[37.0, 37, ',', 1]

UCF
###Universal conductance fluctuations in indium tin oxide nanowires|Ping-Yu Yang,L. Y. Wang,Yao-Wen Hsu,Juhn-Jong Lin###
(1412046, 1412048)
 The approximateelectron dephasing length is inferred from the UCF magnitudes and compared withthat extracted from the weak-localization magnetoresistance studies.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[339.0, 0.26, 'K', 12],[128.0, 37, ',', 2]

B
###Extraordinary magnetoresistance in graphite: experimental evidence for the time-reversal symmetry breaking|Y. Kopelevich,R. R. da Silva,A. S. Alexandrov###
(1412562, 1412562)
 The ordinary magnetoresistance (MR) of doped semiconductors is positive andquadratic in a low magnetic field, B, as it should be in the framework of theBoltzmann kinetic theory or in the conventional hopping regime.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Extraordinary magnetoresistance in graphite: experimental evidence for the time-reversal symmetry breaking|Y. Kopelevich,R. R. da Silva,A. S. Alexandrov###
(1412644, 1412644)
 In a certain current direction MR is negative and linearin B in fields below a few tens of mT with a crossover to a positive MR athigher fields, while in a perpendicular current direction we observe a giantsuper-linear and positive MR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Extraordinary magnetoresistance in graphite: experimental evidence for the time-reversal symmetry breaking|Y. Kopelevich,R. R. da Silva,A. S. Alexandrov###
(1412668, 1412668)
 In a certain current direction MR is negative and linearin B in fields below a few tens of mT with a crossover to a positive MR athigher fields, while in a perpendicular current direction we observe a giantsuper-linear and positive MR.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Extraordinary magnetoresistance in graphite: experimental evidence for the time-reversal symmetry breaking|Y. Kopelevich,R. R. da Silva,A. S. Alexandrov###
(1412805, 1412805)
 The linearorbital NMR is a unique signature of the broken time-reversal symmetry (TRS) ingraphite.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Extraordinary magnetoresistance in graphite: experimental evidence for the time-reversal symmetry breaking|Y. Kopelevich,R. R. da Silva,A. S. Alexandrov###
(1412832, 1412832)
 The linearorbital NMR is a unique signature of the broken time-reversal symmetry (TRS) ingraphite.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Extraordinary magnetoresistance in graphite: experimental evidence for the time-reversal symmetry breaking|Y. Kopelevich,R. R. da Silva,A. S. Alexandrov###
(1412866, 1412866)
 While some local paramagnetic centers could be responsible for thebroken TRS, the observed large diamagnetism suggests a more intriguingmechanism of this breaking, involving superconducting clusters withunconventional (chiral) order parameters and spontaneously generatednormal-state current loops in graphite.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nd0.5Sr0.5CoO3
###Size-dependent electronic-transport mechanism and sign reversal of magnetoresistance in Nd0.5Sr0.5CoO3|S. Kundu,T. K. Nath###
(1412964, 1412970)
Size-dependent electronic-transport mechanism and sign reversal of magnetoresistance in Nd0.5Sr0.5CoO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 28, 'nm', 1]

Nd0.5Sr0.5CoO3
###Size-dependent electronic-transport mechanism and sign reversal of magnetoresistance in Nd0.5Sr0.5CoO3|S. Kundu,T. K. Nath###
(1412989, 1412995)
 A detailed investigation of electronic-transport properties of Nd0.5Sr0.5CoO3has been carried out as a function of grain size ranging from micrometer orderdown to an average size of 28 nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 28, 'nm', 0]

In
###Molecular Magnetocapacitance|Yu-Ning Wu,Xiao-Guang Zhang,Hai-Ping Cheng###
(1413440, 1413440)
 In this letter we demonstrate that in molecularnano-magnets and other magnetic nanoscale systems, the quantum part of thecapacitance becomes spin-dependent, and is tunable by an external magneticfield.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 260, 'meV', 2],[211.0, 6, '%', 2]

As
###Molecular Magnetocapacitance|Yu-Ning Wu,Xiao-Guang Zhang,Hai-Ping Cheng###
(1413555, 1413555)
 As a proof of principle, first-principles calculation of thenano-magnet [Mn3O(sao)3(O2CMe)(H2O)(py)3] shows that the charging energy of thehigh-spin state is 260 meV lower than that of the low-spin state, yielding a 6%difference in capacitance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 260, 'meV', 0],[96.0, 6, '%', 0]

O
###Molecular Magnetocapacitance|Yu-Ning Wu,Xiao-Guang Zhang,Hai-Ping Cheng###
(1413584, 1413584)
 As a proof of principle, first-principles calculation of thenano-magnet [Mn3O(sao)3(O2CMe)(H2O)(py)3] shows that the charging energy of thehigh-spin state is 260 meV lower than that of the low-spin state, yielding a 6%difference in capacitance.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 260, 'meV', 0],[67.0, 6, '%', 0]

O2C
###Molecular Magnetocapacitance|Yu-Ning Wu,Xiao-Guang Zhang,Hai-Ping Cheng###
(1413590, 1413592)
 As a proof of principle, first-principles calculation of thenano-magnet [Mn3O(sao)3(O2CMe)(H2O)(py)3] shows that the charging energy of thehigh-spin state is 260 meV lower than that of the low-spin state, yielding a 6%difference in capacitance.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 260, 'meV', 0],[59.0, 6, '%', 0]

(H2O)
###Molecular Magnetocapacitance|Yu-Ning Wu,Xiao-Guang Zhang,Hai-Ping Cheng###
(1413595, 1413599)
 As a proof of principle, first-principles calculation of thenano-magnet [Mn3O(sao)3(O2CMe)(H2O)(py)3] shows that the charging energy of thehigh-spin state is 260 meV lower than that of the low-spin state, yielding a 6%difference in capacitance.
Featurization successful!
0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 260, 'meV', 0],[52.0, 6, '%', 0]

(OSCs)
###Effects of carrier mobility and morphology in organic semiconductor spin valves|Yaohua Liu,Taegweon Lee,Howard E. Katz,Daniel H. Reich###
(1413850, 1413854)
 We studied spin transport in four organic semiconductors (OSCs) withdifferent electronic properties, with Fe and Co as the top and bottomferromagnetic (FM) contacts, respectively.
Featurization successful!
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[229.0, 3, ',', 3],[231.0, 4, ',', 3],[233.0, 9, ',', 3],[263.0, -1, ',', 3],[266.0, 4, ',', 3],[268.0, 5, ',', 3]

Fe
###Effects of carrier mobility and morphology in organic semiconductor spin valves|Yaohua Liu,Taegweon Lee,Howard E. Katz,Daniel H. Reich###
(1413868, 1413868)
 We studied spin transport in four organic semiconductors (OSCs) withdifferent electronic properties, with Fe and Co as the top and bottomferromagnetic (FM) contacts, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[215.0, 3, ',', 3],[217.0, 4, ',', 3],[219.0, 9, ',', 3],[249.0, -1, ',', 3],[252.0, 4, ',', 3],[254.0, 5, ',', 3]

Co
###Effects of carrier mobility and morphology in organic semiconductor spin valves|Yaohua Liu,Taegweon Lee,Howard E. Katz,Daniel H. Reich###
(1413872, 1413872)
 We studied spin transport in four organic semiconductors (OSCs) withdifferent electronic properties, with Fe and Co as the top and bottomferromagnetic (FM) contacts, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[211.0, 3, ',', 3],[213.0, 4, ',', 3],[215.0, 9, ',', 3],[245.0, -1, ',', 3],[248.0, 4, ',', 3],[250.0, 5, ',', 3]

F
###Effects of carrier mobility and morphology in organic semiconductor spin valves|Yaohua Liu,Taegweon Lee,Howard E. Katz,Daniel H. Reich###
(1413888, 1413888)
 We studied spin transport in four organic semiconductors (OSCs) withdifferent electronic properties, with Fe and Co as the top and bottomferromagnetic (FM) contacts, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[195.0, 3, ',', 3],[197.0, 4, ',', 3],[199.0, 9, ',', 3],[229.0, -1, ',', 3],[232.0, 4, ',', 3],[234.0, 5, ',', 3]

OSC
###Effects of carrier mobility and morphology in organic semiconductor spin valves|Yaohua Liu,Taegweon Lee,Howard E. Katz,Daniel H. Reich###
(1413934, 1413936)
 Magnetoresistance (MR) effects wereobserved up to room temperature in junctions based on an electron-carrying OSC,tris(8-hyroxyquinoline) aluminum (Alq3) and a hole-carrying OSC, copperphthalocyanine (CuPc).
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 3, ',', 2],[149.0, 4, ',', 2],[151.0, 9, ',', 2],[181.0, -1, ',', 2],[184.0, 4, ',', 2],[186.0, 5, ',', 2]

OSC
###Effects of carrier mobility and morphology in organic semiconductor spin valves|Yaohua Liu,Taegweon Lee,Howard E. Katz,Daniel H. Reich###
(1413962, 1413964)
 Magnetoresistance (MR) effects wereobserved up to room temperature in junctions based on an electron-carrying OSC,tris(8-hyroxyquinoline) aluminum (Alq3) and a hole-carrying OSC, copperphthalocyanine (CuPc).
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 3, ',', 2],[121.0, 4, ',', 2],[123.0, 9, ',', 2],[153.0, -1, ',', 2],[156.0, 4, ',', 2],[158.0, 5, ',', 2]

Cu
###Effects of carrier mobility and morphology in organic semiconductor spin valves|Yaohua Liu,Taegweon Lee,Howard E. Katz,Daniel H. Reich###
(1413973, 1413973)
 Magnetoresistance (MR) effects wereobserved up to room temperature in junctions based on an electron-carrying OSC,tris(8-hyroxyquinoline) aluminum (Alq3) and a hole-carrying OSC, copperphthalocyanine (CuPc).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 3, ',', 2],[112.0, 4, ',', 2],[114.0, 9, ',', 2],[144.0, -1, ',', 2],[147.0, 4, ',', 2],[149.0, 5, ',', 2]

OSCs
###Effects of carrier mobility and morphology in organic semiconductor spin valves|Yaohua Liu,Taegweon Lee,Howard E. Katz,Daniel H. Reich###
(1413998, 1414000)
 The MR shows similar temperature dependence for thesetwo OSCs, which suggests that the FM<missing VAR> leads rather than the OSCs play a dominantrole on the spin-transport degradation with increasing temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 3, ',', 1],[85.0, 4, ',', 1],[87.0, 9, ',', 1],[117.0, -1, ',', 1],[120.0, 4, ',', 1],[122.0, 5, ',', 1]

F
###Effects of carrier mobility and morphology in organic semiconductor spin valves|Yaohua Liu,Taegweon Lee,Howard E. Katz,Daniel H. Reich###
(1414011, 1414011)
 The MR shows similar temperature dependence for thesetwo OSCs, which suggests that the FM<missing VAR> leads rather than the OSCs play a dominantrole on the spin-transport degradation with increasing temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 3, ',', 1],[74.0, 4, ',', 1],[76.0, 9, ',', 1],[106.0, -1, ',', 1],[109.0, 4, ',', 1],[111.0, 5, ',', 1]

OSCs
###Effects of carrier mobility and morphology in organic semiconductor spin valves|Yaohua Liu,Taegweon Lee,Howard E. Katz,Daniel H. Reich###
(1414022, 1414024)
 The MR shows similar temperature dependence for thesetwo OSCs, which suggests that the FM<missing VAR> leads rather than the OSCs play a dominantrole on the spin-transport degradation with increasing temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 3, ',', 1],[61.0, 4, ',', 1],[63.0, 9, ',', 1],[93.0, -1, ',', 1],[96.0, 4, ',', 1],[98.0, 5, ',', 1]

OSCs
###Effects of carrier mobility and morphology in organic semiconductor spin valves|Yaohua Liu,Taegweon Lee,Howard E. Katz,Daniel H. Reich###
(1414078, 1414080)
 We alsoinvestigated junctions based on two high lateral mobility electron-carryingOSCs, 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) and N,N-bis(4-trifluoromethylbenzyl)-1,4,5,8-naphthalenetetracarboxylic diimide(CF3-NTCDI).
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 3, ',', 0],[5.0, 4, ',', 0],[7.0, 9, ',', 0],[37.0, -1, ',', 0],[40.0, 4, ',', 0],[42.0, 5, ',', 0]

P
###Effects of carrier mobility and morphology in organic semiconductor spin valves|Yaohua Liu,Taegweon Lee,Howard E. Katz,Daniel H. Reich###
(1414096, 1414096)
 We alsoinvestigated junctions based on two high lateral mobility electron-carryingOSCs, 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) and N,N-bis(4-trifluoromethylbenzyl)-1,4,5,8-naphthalenetetracarboxylic diimide(CF3-NTCDI).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 3, ',', 0],[11.0, 4, ',', 0],[9.0, 9, ',', 0],[21.0, -1, ',', 0],[24.0, 4, ',', 0],[26.0, 5, ',', 0]

N
###Effects of carrier mobility and morphology in organic semiconductor spin valves|Yaohua Liu,Taegweon Lee,Howard E. Katz,Daniel H. Reich###
(1414105, 1414105)
 We alsoinvestigated junctions based on two high lateral mobility electron-carryingOSCs, 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) and N,N-bis(4-trifluoromethylbenzyl)-1,4,5,8-naphthalenetetracarboxylic diimide(CF3-NTCDI).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 3, ',', 0],[20.0, 4, ',', 0],[18.0, 9, ',', 0],[12.0, -1, ',', 0],[15.0, 4, ',', 0],[17.0, 5, ',', 0]

N
###Effects of carrier mobility and morphology in organic semiconductor spin valves|Yaohua Liu,Taegweon Lee,Howard E. Katz,Daniel H. Reich###
(1414109, 1414109)
 We alsoinvestigated junctions based on two high lateral mobility electron-carryingOSCs, 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) and N,N-bis(4-trifluoromethylbenzyl)-1,4,5,8-naphthalenetetracarboxylic diimide(CF3-NTCDI).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 3, ',', 0],[24.0, 4, ',', 0],[22.0, 9, ',', 0],[8.0, -1, ',', 0],[11.0, 4, ',', 0],[13.0, 5, ',', 0]

CF3
###Effects of carrier mobility and morphology in organic semiconductor spin valves|Yaohua Liu,Taegweon Lee,Howard E. Katz,Daniel H. Reich###
(1414132, 1414134)
 We alsoinvestigated junctions based on two high lateral mobility electron-carryingOSCs, 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) and N,N-bis(4-trifluoromethylbenzyl)-1,4,5,8-naphthalenetetracarboxylic diimide(CF3-NTCDI).
Featurization terminated normally.
0,0,0,0,0,0.25,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 3, ',', 0],[47.0, 4, ',', 0],[45.0, 9, ',', 0],[15.0, -1, ',', 0],[12.0, 4, ',', 0],[10.0, 5, ',', 0]

N
###Effects of carrier mobility and morphology in organic semiconductor spin valves|Yaohua Liu,Taegweon Lee,Howard E. Katz,Daniel H. Reich###
(1414136, 1414136)
 We alsoinvestigated junctions based on two high lateral mobility electron-carryingOSCs, 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) and N,N-bis(4-trifluoromethylbenzyl)-1,4,5,8-naphthalenetetracarboxylic diimide(CF3-NTCDI).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 3, ',', 0],[51.0, 4, ',', 0],[49.0, 9, ',', 0],[19.0, -1, ',', 0],[16.0, 4, ',', 0],[14.0, 5, ',', 0]

I
###Effects of carrier mobility and morphology in organic semiconductor spin valves|Yaohua Liu,Taegweon Lee,Howard E. Katz,Daniel H. Reich###
(1414140, 1414140)
 We alsoinvestigated junctions based on two high lateral mobility electron-carryingOSCs, 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) and N,N-bis(4-trifluoromethylbenzyl)-1,4,5,8-naphthalenetetracarboxylic diimide(CF3-NTCDI).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 3, ',', 0],[55.0, 4, ',', 0],[53.0, 9, ',', 0],[23.0, -1, ',', 0],[20.0, 4, ',', 0],[18.0, 5, ',', 0]

OSC
###Effects of carrier mobility and morphology in organic semiconductor spin valves|Yaohua Liu,Taegweon Lee,Howard E. Katz,Daniel H. Reich###
(1414179, 1414181)
 Morphological studies suggest that these high mobility OSC films havemuch rougher surfaces than either Alq3 or CuPc, therefore the degradation ofspin transport may originate from enhanced scattering due to the rougher FM<missing VAR>/OSCinterfaces.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 3, ',', 2],[94.0, 4, ',', 2],[92.0, 9, ',', 2],[62.0, -1, ',', 2],[59.0, 4, ',', 2],[57.0, 5, ',', 2]

Cu
###Effects of carrier mobility and morphology in organic semiconductor spin valves|Yaohua Liu,Taegweon Lee,Howard E. Katz,Daniel H. Reich###
(1414203, 1414203)
 Morphological studies suggest that these high mobility OSC films havemuch rougher surfaces than either Alq3 or CuPc, therefore the degradation ofspin transport may originate from enhanced scattering due to the rougher FM<missing VAR>/OSCinterfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 3, ',', 2],[118.0, 4, ',', 2],[116.0, 9, ',', 2],[86.0, -1, ',', 2],[83.0, 4, ',', 2],[81.0, 5, ',', 2]

F
###Effects of carrier mobility and morphology in organic semiconductor spin valves|Yaohua Liu,Taegweon Lee,Howard E. Katz,Daniel H. Reich###
(1414238, 1414238)
 Morphological studies suggest that these high mobility OSC films havemuch rougher surfaces than either Alq3 or CuPc, therefore the degradation ofspin transport may originate from enhanced scattering due to the rougher FM<missing VAR>/OSCinterfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 3, ',', 2],[153.0, 4, ',', 2],[151.0, 9, ',', 2],[121.0, -1, ',', 2],[118.0, 4, ',', 2],[116.0, 5, ',', 2]

OSC
###Effects of carrier mobility and morphology in organic semiconductor spin valves|Yaohua Liu,Taegweon Lee,Howard E. Katz,Daniel H. Reich###
(1414241, 1414243)
 Morphological studies suggest that these high mobility OSC films havemuch rougher surfaces than either Alq3 or CuPc, therefore the degradation ofspin transport may originate from enhanced scattering due to the rougher FM<missing VAR>/OSCinterfaces.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 3, ',', 2],[156.0, 4, ',', 2],[154.0, 9, ',', 2],[124.0, -1, ',', 2],[121.0, 4, ',', 2],[119.0, 5, ',', 2]

F
###Effects of carrier mobility and morphology in organic semiconductor spin valves|Yaohua Liu,Taegweon Lee,Howard E. Katz,Daniel H. Reich###
(1414257, 1414257)
 Our study shows that FM<missing VAR>/OSC interfaces play an important role forspin transport in organic devices and need further exploration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[174.0, 3, ',', 3],[172.0, 4, ',', 3],[170.0, 9, ',', 3],[140.0, -1, ',', 3],[137.0, 4, ',', 3],[135.0, 5, ',', 3]

OSC
###Effects of carrier mobility and morphology in organic semiconductor spin valves|Yaohua Liu,Taegweon Lee,Howard E. Katz,Daniel H. Reich###
(1414260, 1414262)
 Our study shows that FM<missing VAR>/OSC interfaces play an important role forspin transport in organic devices and need further exploration.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[177.0, 3, ',', 3],[175.0, 4, ',', 3],[173.0, 9, ',', 3],[143.0, -1, ',', 3],[140.0, 4, ',', 3],[138.0, 5, ',', 3]

As
###Properties of Binary Transition-Metal Arsenides (TAs)|B. Saparov,J. E. Mitchell,A. S. Sefat###
(1414318, 1414318)
Properties of Binary Transition-Metal Arsenides (T<missing VAR>As).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[236.0, 71, 'K', 5],[244.0, 260, 'K', 5],[265.0, 317, 'K', 6],[285.0, 317, 'K', 6],[288.0, 384, 'K', 6],[309.0, 40, 'uV', 7],[328.0, 2, 'K', 7],[331.0, 300, 'K', 7],[373.0, 10, 'mJ', 8],[394.0, 8, 'Tesla', 9],[418.0, 25, '%', 9],[427.0, 90, '%', 9],[439.0, 75, '%', 9]

As
###Properties of Binary Transition-Metal Arsenides (TAs)|B. Saparov,J. E. Mitchell,A. S. Sefat###
(1414349, 1414349)
 We present thermodynamic and transport properties of transition-metal (T)arsenides, T<missing VAR>As with T<missing VAR>  Sc to Ni (3d), Zr, Nb, Ru (4d), Hf and Ta (5d).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, 71, 'K', 4],[213.0, 260, 'K', 4],[234.0, 317, 'K', 5],[254.0, 317, 'K', 5],[257.0, 384, 'K', 5],[278.0, 40, 'uV', 6],[297.0, 2, 'K', 6],[300.0, 300, 'K', 6],[342.0, 10, 'mJ', 7],[363.0, 8, 'Tesla', 8],[387.0, 25, '%', 8],[396.0, 90, '%', 8],[408.0, 75, '%', 8]

Sc
###Properties of Binary Transition-Metal Arsenides (TAs)|B. Saparov,J. E. Mitchell,A. S. Sefat###
(1414356, 1414356)
 We present thermodynamic and transport properties of transition-metal (T)arsenides, T<missing VAR>As with T<missing VAR>  Sc to Ni (3d), Zr, Nb, Ru (4d), Hf and Ta (5d).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[198.0, 71, 'K', 4],[206.0, 260, 'K', 4],[227.0, 317, 'K', 5],[247.0, 317, 'K', 5],[250.0, 384, 'K', 5],[271.0, 40, 'uV', 6],[290.0, 2, 'K', 6],[293.0, 300, 'K', 6],[335.0, 10, 'mJ', 7],[356.0, 8, 'Tesla', 8],[380.0, 25, '%', 8],[389.0, 90, '%', 8],[401.0, 75, '%', 8]

Ni
###Properties of Binary Transition-Metal Arsenides (TAs)|B. Saparov,J. E. Mitchell,A. S. Sefat###
(1414360, 1414360)
 We present thermodynamic and transport properties of transition-metal (T)arsenides, T<missing VAR>As with T<missing VAR>  Sc to Ni (3d), Zr, Nb, Ru (4d), Hf and Ta (5d).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[194.0, 71, 'K', 4],[202.0, 260, 'K', 4],[223.0, 317, 'K', 5],[243.0, 317, 'K', 5],[246.0, 384, 'K', 5],[267.0, 40, 'uV', 6],[286.0, 2, 'K', 6],[289.0, 300, 'K', 6],[331.0, 10, 'mJ', 7],[352.0, 8, 'Tesla', 8],[376.0, 25, '%', 8],[385.0, 90, '%', 8],[397.0, 75, '%', 8]

Zr
###Properties of Binary Transition-Metal Arsenides (TAs)|B. Saparov,J. E. Mitchell,A. S. Sefat###
(1414368, 1414368)
 We present thermodynamic and transport properties of transition-metal (T)arsenides, T<missing VAR>As with T<missing VAR>  Sc to Ni (3d), Zr, Nb, Ru (4d), Hf and Ta (5d).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, 71, 'K', 4],[194.0, 260, 'K', 4],[215.0, 317, 'K', 5],[235.0, 317, 'K', 5],[238.0, 384, 'K', 5],[259.0, 40, 'uV', 6],[278.0, 2, 'K', 6],[281.0, 300, 'K', 6],[323.0, 10, 'mJ', 7],[344.0, 8, 'Tesla', 8],[368.0, 25, '%', 8],[377.0, 90, '%', 8],[389.0, 75, '%', 8]

Nb
###Properties of Binary Transition-Metal Arsenides (TAs)|B. Saparov,J. E. Mitchell,A. S. Sefat###
(1414371, 1414371)
 We present thermodynamic and transport properties of transition-metal (T)arsenides, T<missing VAR>As with T<missing VAR>  Sc to Ni (3d), Zr, Nb, Ru (4d), Hf and Ta (5d).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[183.0, 71, 'K', 4],[191.0, 260, 'K', 4],[212.0, 317, 'K', 5],[232.0, 317, 'K', 5],[235.0, 384, 'K', 5],[256.0, 40, 'uV', 6],[275.0, 2, 'K', 6],[278.0, 300, 'K', 6],[320.0, 10, 'mJ', 7],[341.0, 8, 'Tesla', 8],[365.0, 25, '%', 8],[374.0, 90, '%', 8],[386.0, 75, '%', 8]

Ru
###Properties of Binary Transition-Metal Arsenides (TAs)|B. Saparov,J. E. Mitchell,A. S. Sefat###
(1414374, 1414374)
 We present thermodynamic and transport properties of transition-metal (T)arsenides, T<missing VAR>As with T<missing VAR>  Sc to Ni (3d), Zr, Nb, Ru (4d), Hf and Ta (5d).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[180.0, 71, 'K', 4],[188.0, 260, 'K', 4],[209.0, 317, 'K', 5],[229.0, 317, 'K', 5],[232.0, 384, 'K', 5],[253.0, 40, 'uV', 6],[272.0, 2, 'K', 6],[275.0, 300, 'K', 6],[317.0, 10, 'mJ', 7],[338.0, 8, 'Tesla', 8],[362.0, 25, '%', 8],[371.0, 90, '%', 8],[383.0, 75, '%', 8]

Hf
###Properties of Binary Transition-Metal Arsenides (TAs)|B. Saparov,J. E. Mitchell,A. S. Sefat###
(1414382, 1414382)
 We present thermodynamic and transport properties of transition-metal (T)arsenides, T<missing VAR>As with T<missing VAR>  Sc to Ni (3d), Zr, Nb, Ru (4d), Hf and Ta (5d).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[172.0, 71, 'K', 4],[180.0, 260, 'K', 4],[201.0, 317, 'K', 5],[221.0, 317, 'K', 5],[224.0, 384, 'K', 5],[245.0, 40, 'uV', 6],[264.0, 2, 'K', 6],[267.0, 300, 'K', 6],[309.0, 10, 'mJ', 7],[330.0, 8, 'Tesla', 8],[354.0, 25, '%', 8],[363.0, 90, '%', 8],[375.0, 75, '%', 8]

Ta
###Properties of Binary Transition-Metal Arsenides (TAs)|B. Saparov,J. E. Mitchell,A. S. Sefat###
(1414386, 1414386)
 We present thermodynamic and transport properties of transition-metal (T)arsenides, T<missing VAR>As with T<missing VAR>  Sc to Ni (3d), Zr, Nb, Ru (4d), Hf and Ta (5d).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[168.0, 71, 'K', 4],[176.0, 260, 'K', 4],[197.0, 317, 'K', 5],[217.0, 317, 'K', 5],[220.0, 384, 'K', 5],[241.0, 40, 'uV', 6],[260.0, 2, 'K', 6],[263.0, 300, 'K', 6],[305.0, 10, 'mJ', 7],[326.0, 8, 'Tesla', 8],[350.0, 25, '%', 8],[359.0, 90, '%', 8],[371.0, 75, '%', 8]

TaAs
###Properties of Binary Transition-Metal Arsenides (TAs)|B. Saparov,J. E. Mitchell,A. S. Sefat###
(1414469, 1414470)
 All binaries show metallic behavior except TaAs and RuAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 71, 'K', 2],[92.0, 260, 'K', 2],[113.0, 317, 'K', 3],[133.0, 317, 'K', 3],[136.0, 384, 'K', 3],[157.0, 40, 'uV', 4],[176.0, 2, 'K', 4],[179.0, 300, 'K', 4],[221.0, 10, 'mJ', 5],[242.0, 8, 'Tesla', 6],[266.0, 25, '%', 6],[275.0, 90, '%', 6],[287.0, 75, '%', 6]

RuAs
###Properties of Binary Transition-Metal Arsenides (TAs)|B. Saparov,J. E. Mitchell,A. S. Sefat###
(1414474, 1414475)
 All binaries show metallic behavior except TaAs and RuAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 71, 'K', 2],[87.0, 260, 'K', 2],[108.0, 317, 'K', 3],[128.0, 317, 'K', 3],[131.0, 384, 'K', 3],[152.0, 40, 'uV', 4],[171.0, 2, 'K', 4],[174.0, 300, 'K', 4],[216.0, 10, 'mJ', 5],[237.0, 8, 'Tesla', 6],[261.0, 25, '%', 6],[270.0, 90, '%', 6],[282.0, 75, '%', 6]

TaAs
###Properties of Binary Transition-Metal Arsenides (TAs)|B. Saparov,J. E. Mitchell,A. S. Sefat###
(1414478, 1414479)
 TaAs,NbAs, ScAs and ZrAs are diamagnetic, while CoAs, VAs, TiAs, NiAs and RuAs showapproximately Pauli paramagnetic behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 71, 'K', 1],[83.0, 260, 'K', 1],[104.0, 317, 'K', 2],[124.0, 317, 'K', 2],[127.0, 384, 'K', 2],[148.0, 40, 'uV', 3],[167.0, 2, 'K', 3],[170.0, 300, 'K', 3],[212.0, 10, 'mJ', 4],[233.0, 8, 'Tesla', 5],[257.0, 25, '%', 5],[266.0, 90, '%', 5],[278.0, 75, '%', 5]

NbAs
###Properties of Binary Transition-Metal Arsenides (TAs)|B. Saparov,J. E. Mitchell,A. S. Sefat###
(1414483, 1414484)
 TaAs,NbAs, ScAs and ZrAs are diamagnetic, while CoAs, VAs, TiAs, NiAs and RuAs showapproximately Pauli paramagnetic behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 71, 'K', 1],[78.0, 260, 'K', 1],[99.0, 317, 'K', 2],[119.0, 317, 'K', 2],[122.0, 384, 'K', 2],[143.0, 40, 'uV', 3],[162.0, 2, 'K', 3],[165.0, 300, 'K', 3],[207.0, 10, 'mJ', 4],[228.0, 8, 'Tesla', 5],[252.0, 25, '%', 5],[261.0, 90, '%', 5],[273.0, 75, '%', 5]

ScAs
###Properties of Binary Transition-Metal Arsenides (TAs)|B. Saparov,J. E. Mitchell,A. S. Sefat###
(1414487, 1414488)
 TaAs,NbAs, ScAs and ZrAs are diamagnetic, while CoAs, VAs, TiAs, NiAs and RuAs showapproximately Pauli paramagnetic behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 71, 'K', 1],[74.0, 260, 'K', 1],[95.0, 317, 'K', 2],[115.0, 317, 'K', 2],[118.0, 384, 'K', 2],[139.0, 40, 'uV', 3],[158.0, 2, 'K', 3],[161.0, 300, 'K', 3],[203.0, 10, 'mJ', 4],[224.0, 8, 'Tesla', 5],[248.0, 25, '%', 5],[257.0, 90, '%', 5],[269.0, 75, '%', 5]

ZrAs
###Properties of Binary Transition-Metal Arsenides (TAs)|B. Saparov,J. E. Mitchell,A. S. Sefat###
(1414492, 1414493)
 TaAs,NbAs, ScAs and ZrAs are diamagnetic, while CoAs, VAs, TiAs, NiAs and RuAs showapproximately Pauli paramagnetic behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 71, 'K', 1],[69.0, 260, 'K', 1],[90.0, 317, 'K', 2],[110.0, 317, 'K', 2],[113.0, 384, 'K', 2],[134.0, 40, 'uV', 3],[153.0, 2, 'K', 3],[156.0, 300, 'K', 3],[198.0, 10, 'mJ', 4],[219.0, 8, 'Tesla', 5],[243.0, 25, '%', 5],[252.0, 90, '%', 5],[264.0, 75, '%', 5]

CoAs
###Properties of Binary Transition-Metal Arsenides (TAs)|B. Saparov,J. E. Mitchell,A. S. Sefat###
(1414502, 1414503)
 TaAs,NbAs, ScAs and ZrAs are diamagnetic, while CoAs, VAs, TiAs, NiAs and RuAs showapproximately Pauli paramagnetic behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 71, 'K', 1],[59.0, 260, 'K', 1],[80.0, 317, 'K', 2],[100.0, 317, 'K', 2],[103.0, 384, 'K', 2],[124.0, 40, 'uV', 3],[143.0, 2, 'K', 3],[146.0, 300, 'K', 3],[188.0, 10, 'mJ', 4],[209.0, 8, 'Tesla', 5],[233.0, 25, '%', 5],[242.0, 90, '%', 5],[254.0, 75, '%', 5]

VAs
###Properties of Binary Transition-Metal Arsenides (TAs)|B. Saparov,J. E. Mitchell,A. S. Sefat###
(1414506, 1414507)
 TaAs,NbAs, ScAs and ZrAs are diamagnetic, while CoAs, VAs, TiAs, NiAs and RuAs showapproximately Pauli paramagnetic behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 71, 'K', 1],[55.0, 260, 'K', 1],[76.0, 317, 'K', 2],[96.0, 317, 'K', 2],[99.0, 384, 'K', 2],[120.0, 40, 'uV', 3],[139.0, 2, 'K', 3],[142.0, 300, 'K', 3],[184.0, 10, 'mJ', 4],[205.0, 8, 'Tesla', 5],[229.0, 25, '%', 5],[238.0, 90, '%', 5],[250.0, 75, '%', 5]

TiAs
###Properties of Binary Transition-Metal Arsenides (TAs)|B. Saparov,J. E. Mitchell,A. S. Sefat###
(1414510, 1414511)
 TaAs,NbAs, ScAs and ZrAs are diamagnetic, while CoAs, VAs, TiAs, NiAs and RuAs showapproximately Pauli paramagnetic behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 71, 'K', 1],[51.0, 260, 'K', 1],[72.0, 317, 'K', 2],[92.0, 317, 'K', 2],[95.0, 384, 'K', 2],[116.0, 40, 'uV', 3],[135.0, 2, 'K', 3],[138.0, 300, 'K', 3],[180.0, 10, 'mJ', 4],[201.0, 8, 'Tesla', 5],[225.0, 25, '%', 5],[234.0, 90, '%', 5],[246.0, 75, '%', 5]

NiAs
###Properties of Binary Transition-Metal Arsenides (TAs)|B. Saparov,J. E. Mitchell,A. S. Sefat###
(1414514, 1414515)
 TaAs,NbAs, ScAs and ZrAs are diamagnetic, while CoAs, VAs, TiAs, NiAs and RuAs showapproximately Pauli paramagnetic behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 71, 'K', 1],[47.0, 260, 'K', 1],[68.0, 317, 'K', 2],[88.0, 317, 'K', 2],[91.0, 384, 'K', 2],[112.0, 40, 'uV', 3],[131.0, 2, 'K', 3],[134.0, 300, 'K', 3],[176.0, 10, 'mJ', 4],[197.0, 8, 'Tesla', 5],[221.0, 25, '%', 5],[230.0, 90, '%', 5],[242.0, 75, '%', 5]

RuAs
###Properties of Binary Transition-Metal Arsenides (TAs)|B. Saparov,J. E. Mitchell,A. S. Sefat###
(1414519, 1414520)
 TaAs,NbAs, ScAs and ZrAs are diamagnetic, while CoAs, VAs, TiAs, NiAs and RuAs showapproximately Pauli paramagnetic behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 71, 'K', 1],[42.0, 260, 'K', 1],[63.0, 317, 'K', 2],[83.0, 317, 'K', 2],[86.0, 384, 'K', 2],[107.0, 40, 'uV', 3],[126.0, 2, 'K', 3],[129.0, 300, 'K', 3],[171.0, 10, 'mJ', 4],[192.0, 8, 'Tesla', 5],[216.0, 25, '%', 5],[225.0, 90, '%', 5],[237.0, 75, '%', 5]

FeAs
###Properties of Binary Transition-Metal Arsenides (TAs)|B. Saparov,J. E. Mitchell,A. S. Sefat###
(1414534, 1414535)
 FeAs and CrAs undergoantiferromagnetic order below T<missing VAR>N  71 K and T<missing VAR>N approx 260 K, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 71, 'K', 0],[27.0, 260, 'K', 0],[48.0, 317, 'K', 1],[68.0, 317, 'K', 1],[71.0, 384, 'K', 1],[92.0, 40, 'uV', 2],[111.0, 2, 'K', 2],[114.0, 300, 'K', 2],[156.0, 10, 'mJ', 3],[177.0, 8, 'Tesla', 4],[201.0, 25, '%', 4],[210.0, 90, '%', 4],[222.0, 75, '%', 4]

CrAs
###Properties of Binary Transition-Metal Arsenides (TAs)|B. Saparov,J. E. Mitchell,A. S. Sefat###
(1414539, 1414540)
 FeAs and CrAs undergoantiferromagnetic order below T<missing VAR>N  71 K and T<missing VAR>N approx 260 K, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 71, 'K', 0],[22.0, 260, 'K', 0],[43.0, 317, 'K', 1],[63.0, 317, 'K', 1],[66.0, 384, 'K', 1],[87.0, 40, 'uV', 2],[106.0, 2, 'K', 2],[109.0, 300, 'K', 2],[151.0, 10, 'mJ', 3],[172.0, 8, 'Tesla', 4],[196.0, 25, '%', 4],[205.0, 90, '%', 4],[217.0, 75, '%', 4]

N
###Properties of Binary Transition-Metal Arsenides (TAs)|B. Saparov,J. E. Mitchell,A. S. Sefat###
(1414552, 1414552)
 FeAs and CrAs undergoantiferromagnetic order below T<missing VAR>N  71 K and T<missing VAR>N approx 260 K, respectively.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 71, 'K', 0],[10.0, 260, 'K', 0],[31.0, 317, 'K', 1],[51.0, 317, 'K', 1],[54.0, 384, 'K', 1],[75.0, 40, 'uV', 2],[94.0, 2, 'K', 2],[97.0, 300, 'K', 2],[139.0, 10, 'mJ', 3],[160.0, 8, 'Tesla', 4],[184.0, 25, '%', 4],[193.0, 90, '%', 4],[205.0, 75, '%', 4]

N
###Properties of Binary Transition-Metal Arsenides (TAs)|B. Saparov,J. E. Mitchell,A. S. Sefat###
(1414559, 1414559)
 FeAs and CrAs undergoantiferromagnetic order below T<missing VAR>N  71 K and T<missing VAR>N approx 260 K, respectively.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 71, 'K', 0],[3.0, 260, 'K', 0],[24.0, 317, 'K', 1],[44.0, 317, 'K', 1],[47.0, 384, 'K', 1],[68.0, 40, 'uV', 2],[87.0, 2, 'K', 2],[90.0, 300, 'K', 2],[132.0, 10, 'mJ', 3],[153.0, 8, 'Tesla', 4],[177.0, 25, '%', 4],[186.0, 90, '%', 4],[198.0, 75, '%', 4]

MnAs
###Properties of Binary Transition-Metal Arsenides (TAs)|B. Saparov,J. E. Mitchell,A. S. Sefat###
(1414569, 1414570)
MnAs is a ferromagnet below T<missing VAR>C  317 K and undergoeshexagonal-orthorhombic-hexagonal transitions at T<missing VAR>S  317 K and 384 K,respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 71, 'K', 1],[7.0, 260, 'K', 1],[13.0, 317, 'K', 0],[33.0, 317, 'K', 0],[36.0, 384, 'K', 0],[57.0, 40, 'uV', 1],[76.0, 2, 'K', 1],[79.0, 300, 'K', 1],[121.0, 10, 'mJ', 2],[142.0, 8, 'Tesla', 3],[166.0, 25, '%', 3],[175.0, 90, '%', 3],[187.0, 75, '%', 3]

C
###Properties of Binary Transition-Metal Arsenides (TAs)|B. Saparov,J. E. Mitchell,A. S. Sefat###
(1414581, 1414581)
MnAs is a ferromagnet below T<missing VAR>C  317 K and undergoeshexagonal-orthorhombic-hexagonal transitions at T<missing VAR>S  317 K and 384 K,respectively.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 71, 'K', 1],[19.0, 260, 'K', 1],[2.0, 317, 'K', 0],[22.0, 317, 'K', 0],[25.0, 384, 'K', 0],[46.0, 40, 'uV', 1],[65.0, 2, 'K', 1],[68.0, 300, 'K', 1],[110.0, 10, 'mJ', 2],[131.0, 8, 'Tesla', 3],[155.0, 25, '%', 3],[164.0, 90, '%', 3],[176.0, 75, '%', 3]

S
###Properties of Binary Transition-Metal Arsenides (TAs)|B. Saparov,J. E. Mitchell,A. S. Sefat###
(1414601, 1414601)
MnAs is a ferromagnet below T<missing VAR>C  317 K and undergoeshexagonal-orthorhombic-hexagonal transitions at T<missing VAR>S  317 K and 384 K,respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 71, 'K', 1],[39.0, 260, 'K', 1],[18.0, 317, 'K', 0],[2.0, 317, 'K', 0],[5.0, 384, 'K', 0],[26.0, 40, 'uV', 1],[45.0, 2, 'K', 1],[48.0, 300, 'K', 1],[90.0, 10, 'mJ', 2],[111.0, 8, 'Tesla', 3],[135.0, 25, '%', 3],[144.0, 90, '%', 3],[156.0, 75, '%', 3]

As
###Properties of Binary Transition-Metal Arsenides (TAs)|B. Saparov,J. E. Mitchell,A. S. Sefat###
(1414616, 1414616)
 For T<missing VAR>As, Seebeck coefficients vary between  40 uV/K and - 40u<missing VAR>V/K in the 2 K to 300 K range, whereas thermal conductivity values stay below18 W/(m<missing VAR> K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 71, 'K', 2],[54.0, 260, 'K', 2],[33.0, 317, 'K', 1],[13.0, 317, 'K', 1],[10.0, 384, 'K', 1],[11.0, 40, 'uV', 0],[30.0, 2, 'K', 0],[33.0, 300, 'K', 0],[75.0, 10, 'mJ', 1],[96.0, 8, 'Tesla', 2],[120.0, 25, '%', 2],[129.0, 90, '%', 2],[141.0, 75, '%', 2]

K
###Properties of Binary Transition-Metal Arsenides (TAs)|B. Saparov,J. E. Mitchell,A. S. Sefat###
(1414629, 1414629)
 For T<missing VAR>As, Seebeck coefficients vary between  40 uV/K and - 40u<missing VAR>V/K in the 2 K to 300 K range, whereas thermal conductivity values stay below18 W/(m<missing VAR> K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 71, 'K', 2],[67.0, 260, 'K', 2],[46.0, 317, 'K', 1],[26.0, 317, 'K', 1],[23.0, 384, 'K', 1],[2.0, 40, 'uV', 0],[17.0, 2, 'K', 0],[20.0, 300, 'K', 0],[62.0, 10, 'mJ', 1],[83.0, 8, 'Tesla', 2],[107.0, 25, '%', 2],[116.0, 90, '%', 2],[128.0, 75, '%', 2]

V/K
###Properties of Binary Transition-Metal Arsenides (TAs)|B. Saparov,J. E. Mitchell,A. S. Sefat###
(1414639, 1414641)
 For T<missing VAR>As, Seebeck coefficients vary between  40 uV/K and - 40u<missing VAR>V/K in the 2 K to 300 K range, whereas thermal conductivity values stay below18 W/(m<missing VAR> K).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[85.0, 71, 'K', 2],[77.0, 260, 'K', 2],[56.0, 317, 'K', 1],[36.0, 317, 'K', 1],[33.0, 384, 'K', 1],[12.0, 40, 'uV', 0],[5.0, 2, 'K', 0],[8.0, 300, 'K', 0],[50.0, 10, 'mJ', 1],[71.0, 8, 'Tesla', 2],[95.0, 25, '%', 2],[104.0, 90, '%', 2],[116.0, 75, '%', 2]

K
###Properties of Binary Transition-Metal Arsenides (TAs)|B. Saparov,J. E. Mitchell,A. S. Sefat###
(1414674, 1414674)
 For T<missing VAR>As, Seebeck coefficients vary between  40 uV/K and - 40u<missing VAR>V/K in the 2 K to 300 K range, whereas thermal conductivity values stay below18 W/(m<missing VAR> K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 71, 'K', 2],[112.0, 260, 'K', 2],[91.0, 317, 'K', 1],[71.0, 317, 'K', 1],[68.0, 384, 'K', 1],[47.0, 40, 'uV', 0],[28.0, 2, 'K', 0],[25.0, 300, 'K', 0],[17.0, 10, 'mJ', 1],[38.0, 8, 'Tesla', 2],[62.0, 25, '%', 2],[71.0, 90, '%', 2],[83.0, 75, '%', 2]

K2
###Properties of Binary Transition-Metal Arsenides (TAs)|B. Saparov,J. E. Mitchell,A. S. Sefat###
(1414694, 1414695)
 The Sommerfeld-coefficient gamma are less than 10 mJ/(K2mol).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 71, 'K', 3],[132.0, 260, 'K', 3],[111.0, 317, 'K', 2],[91.0, 317, 'K', 2],[88.0, 384, 'K', 2],[67.0, 40, 'uV', 1],[48.0, 2, 'K', 1],[45.0, 300, 'K', 1],[3.0, 10, 'mJ', 0],[17.0, 8, 'Tesla', 1],[41.0, 25, '%', 1],[50.0, 90, '%', 1],[62.0, 75, '%', 1]

At
###Properties of Binary Transition-Metal Arsenides (TAs)|B. Saparov,J. E. Mitchell,A. S. Sefat###
(1414700, 1414700)
 Atroom temperature with application of 8 Tesla magnetic field, large positivemagnetoresistance is found for TaAs (25%), MnAs (90%) and for NbAs (75%).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 71, 'K', 4],[138.0, 260, 'K', 4],[117.0, 317, 'K', 3],[97.0, 317, 'K', 3],[94.0, 384, 'K', 3],[73.0, 40, 'uV', 2],[54.0, 2, 'K', 2],[51.0, 300, 'K', 2],[9.0, 10, 'mJ', 1],[12.0, 8, 'Tesla', 0],[36.0, 25, '%', 0],[45.0, 90, '%', 0],[57.0, 75, '%', 0]

TaAs
###Properties of Binary Transition-Metal Arsenides (TAs)|B. Saparov,J. E. Mitchell,A. S. Sefat###
(1414732, 1414733)
 Atroom temperature with application of 8 Tesla magnetic field, large positivemagnetoresistance is found for TaAs (25%), MnAs (90%) and for NbAs (75%).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 71, 'K', 4],[170.0, 260, 'K', 4],[149.0, 317, 'K', 3],[129.0, 317, 'K', 3],[126.0, 384, 'K', 3],[105.0, 40, 'uV', 2],[86.0, 2, 'K', 2],[83.0, 300, 'K', 2],[41.0, 10, 'mJ', 1],[20.0, 8, 'Tesla', 0],[3.0, 25, '%', 0],[12.0, 90, '%', 0],[24.0, 75, '%', 0]

MnAs
###Properties of Binary Transition-Metal Arsenides (TAs)|B. Saparov,J. E. Mitchell,A. S. Sefat###
(1414741, 1414742)
 Atroom temperature with application of 8 Tesla magnetic field, large positivemagnetoresistance is found for TaAs (25%), MnAs (90%) and for NbAs (75%).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[187.0, 71, 'K', 4],[179.0, 260, 'K', 4],[158.0, 317, 'K', 3],[138.0, 317, 'K', 3],[135.0, 384, 'K', 3],[114.0, 40, 'uV', 2],[95.0, 2, 'K', 2],[92.0, 300, 'K', 2],[50.0, 10, 'mJ', 1],[29.0, 8, 'Tesla', 0],[5.0, 25, '%', 0],[3.0, 90, '%', 0],[15.0, 75, '%', 0]

NbAs
###Properties of Binary Transition-Metal Arsenides (TAs)|B. Saparov,J. E. Mitchell,A. S. Sefat###
(1414753, 1414754)
 Atroom temperature with application of 8 Tesla magnetic field, large positivemagnetoresistance is found for TaAs (25%), MnAs (90%) and for NbAs (75%).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[199.0, 71, 'K', 4],[191.0, 260, 'K', 4],[170.0, 317, 'K', 3],[150.0, 317, 'K', 3],[147.0, 384, 'K', 3],[126.0, 40, 'uV', 2],[107.0, 2, 'K', 2],[104.0, 300, 'K', 2],[62.0, 10, 'mJ', 1],[41.0, 8, 'Tesla', 0],[17.0, 25, '%', 0],[8.0, 90, '%', 0],[3.0, 75, '%', 0]

RuSr2(Gd1.5Ce0.5)Cu2O10
###Hysteresis and stepwise structure in MR curves of granular superconducting ruthenocuprates RuSr$_2$(Gd$_{1.5}$Ce$_{0.5})$Cu$_2$O$_{10-δ}$}|B. I. Belevtsev,E. Yu. Beliayev,D. G. Naugle,K. D. D. Rathnayaka###
(1415270, 1415282)
Hysteresis and stepwise structure in MR curves of granular superconducting ruthenocuprates RuSr2(Gd1.5Ce0.5)Cu2O10-.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5882352941176471,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.11764705882352941,0,0,0,0,0,0,0,0,0.11764705882352941,0,0,0,0,0,0.058823529411764705,0,0,0,0,0,0,0,0,0,0,0,0,0,0.029411764705882353,0,0,0,0,0,0.08823529411764706,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

RuSr2(Gd1.5Ce0.5)Cu2O10
###Hysteresis and stepwise structure in MR curves of granular superconducting ruthenocuprates RuSr$_2$(Gd$_{1.5}$Ce$_{0.5})$Cu$_2$O$_{10-δ}$}|B. I. Belevtsev,E. Yu. Beliayev,D. G. Naugle,K. D. D. Rathnayaka###
(1415305, 1415317)
 Granular superconductivity effects in a polycrystalline sample ofruthenocuprate RuSr2(Gd1.5Ce0.5)Cu2O10-delta are studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5882352941176471,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.11764705882352941,0,0,0,0,0,0,0,0,0.11764705882352941,0,0,0,0,0,0.058823529411764705,0,0,0,0,0,0,0,0,0,0,0,0,0,0.029411764705882353,0,0,0,0,0,0.08823529411764706,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Anisotropic magnetothermoelectric power of ferromagnetic thin films|M. S. Anwar,B. Lacoste,J. Aarts###
(1415725, 1415725)
 We compare the behavior of the magnetothermoelectric power (MTEP)in metallicferromagnetic thin films of Ni80Fe20 (Permalloy; Py), Co and CrO2 attemperatures in the range of 100 K to 400 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 100, 'K', 0],[51.0, 400, 'K', 0],[55.0, 25, 'nm', 1],[64.0, 50, 'nm', 1],[128.0, 0.2, '%', 1],[251.0, 100, 'nm', 3],[341.0, 1, '%', 4],[390.0, 1.5, '%', 5],[414.0, 20, '%', 5],[443.0, 3, '%', 5]

Ni80Fe20
###Anisotropic magnetothermoelectric power of ferromagnetic thin films|M. S. Anwar,B. Lacoste,J. Aarts###
(1415740, 1415743)
 We compare the behavior of the magnetothermoelectric power (MTEP)in metallicferromagnetic thin films of Ni80Fe20 (Permalloy; Py), Co and CrO2 attemperatures in the range of 100 K to 400 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 100, 'K', 0],[33.0, 400, 'K', 0],[37.0, 25, 'nm', 1],[46.0, 50, 'nm', 1],[110.0, 0.2, '%', 1],[233.0, 100, 'nm', 3],[323.0, 1, '%', 4],[372.0, 1.5, '%', 5],[396.0, 20, '%', 5],[425.0, 3, '%', 5]

Co
###Anisotropic magnetothermoelectric power of ferromagnetic thin films|M. S. Anwar,B. Lacoste,J. Aarts###
(1415753, 1415753)
 We compare the behavior of the magnetothermoelectric power (MTEP)in metallicferromagnetic thin films of Ni80Fe20 (Permalloy; Py), Co and CrO2 attemperatures in the range of 100 K to 400 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 100, 'K', 0],[23.0, 400, 'K', 0],[27.0, 25, 'nm', 1],[36.0, 50, 'nm', 1],[100.0, 0.2, '%', 1],[223.0, 100, 'nm', 3],[313.0, 1, '%', 4],[362.0, 1.5, '%', 5],[386.0, 20, '%', 5],[415.0, 3, '%', 5]

CrO2
###Anisotropic magnetothermoelectric power of ferromagnetic thin films|M. S. Anwar,B. Lacoste,J. Aarts###
(1415757, 1415759)
 We compare the behavior of the magnetothermoelectric power (MTEP)in metallicferromagnetic thin films of Ni80Fe20 (Permalloy; Py), Co and CrO2 attemperatures in the range of 100 K to 400 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 100, 'K', 0],[17.0, 400, 'K', 0],[21.0, 25, 'nm', 1],[30.0, 50, 'nm', 1],[94.0, 0.2, '%', 1],[217.0, 100, 'nm', 3],[307.0, 1, '%', 4],[356.0, 1.5, '%', 5],[380.0, 20, '%', 5],[409.0, 3, '%', 5]

In
###Anisotropic magnetothermoelectric power of ferromagnetic thin films|M. S. Anwar,B. Lacoste,J. Aarts###
(1415779, 1415779)
 In 25 nm thick Py films and 50 nmthick Co films both the anisotropic magnetoresistance (AMR) and MTEP show arelative change in resistance and thermoelectric power (TEP) of the order of0.2% when the magnetic field is reversed, and in both cases there is nosignificant change in AMR or MTEP any more after the saturation field has beenreached.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 100, 'K', 1],[3.0, 400, 'K', 1],[1.0, 25, 'nm', 0],[10.0, 50, 'nm', 0],[74.0, 0.2, '%', 0],[197.0, 100, 'nm', 2],[287.0, 1, '%', 3],[336.0, 1.5, '%', 4],[360.0, 20, '%', 4],[389.0, 3, '%', 4]

Co
###Anisotropic magnetothermoelectric power of ferromagnetic thin films|M. S. Anwar,B. Lacoste,J. Aarts###
(1415794, 1415794)
 In 25 nm thick Py films and 50 nmthick Co films both the anisotropic magnetoresistance (AMR) and MTEP show arelative change in resistance and thermoelectric power (TEP) of the order of0.2% when the magnetic field is reversed, and in both cases there is nosignificant change in AMR or MTEP any more after the saturation field has beenreached.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 100, 'K', 1],[18.0, 400, 'K', 1],[14.0, 25, 'nm', 0],[5.0, 50, 'nm', 0],[59.0, 0.2, '%', 0],[182.0, 100, 'nm', 2],[272.0, 1, '%', 3],[321.0, 1.5, '%', 4],[345.0, 20, '%', 4],[374.0, 3, '%', 4]

P
###Anisotropic magnetothermoelectric power of ferromagnetic thin films|M. S. Anwar,B. Lacoste,J. Aarts###
(1415817, 1415817)
 In 25 nm thick Py films and 50 nmthick Co films both the anisotropic magnetoresistance (AMR) and MTEP show arelative change in resistance and thermoelectric power (TEP) of the order of0.2% when the magnetic field is reversed, and in both cases there is nosignificant change in AMR or MTEP any more after the saturation field has beenreached.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 100, 'K', 1],[41.0, 400, 'K', 1],[37.0, 25, 'nm', 0],[28.0, 50, 'nm', 0],[36.0, 0.2, '%', 0],[159.0, 100, 'nm', 2],[249.0, 1, '%', 3],[298.0, 1.5, '%', 4],[322.0, 20, '%', 4],[351.0, 3, '%', 4]

P
###Anisotropic magnetothermoelectric power of ferromagnetic thin films|M. S. Anwar,B. Lacoste,J. Aarts###
(1415841, 1415841)
 In 25 nm thick Py films and 50 nmthick Co films both the anisotropic magnetoresistance (AMR) and MTEP show arelative change in resistance and thermoelectric power (TEP) of the order of0.2% when the magnetic field is reversed, and in both cases there is nosignificant change in AMR or MTEP any more after the saturation field has beenreached.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 100, 'K', 1],[65.0, 400, 'K', 1],[61.0, 25, 'nm', 0],[52.0, 50, 'nm', 0],[12.0, 0.2, '%', 0],[135.0, 100, 'nm', 2],[225.0, 1, '%', 3],[274.0, 1.5, '%', 4],[298.0, 20, '%', 4],[327.0, 3, '%', 4]

P
###Anisotropic magnetothermoelectric power of ferromagnetic thin films|M. S. Anwar,B. Lacoste,J. Aarts###
(1415899, 1415899)
 In 25 nm thick Py films and 50 nmthick Co films both the anisotropic magnetoresistance (AMR) and MTEP show arelative change in resistance and thermoelectric power (TEP) of the order of0.2% when the magnetic field is reversed, and in both cases there is nosignificant change in AMR or MTEP any more after the saturation field has beenreached.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 100, 'K', 1],[123.0, 400, 'K', 1],[119.0, 25, 'nm', 0],[110.0, 50, 'nm', 0],[46.0, 0.2, '%', 0],[77.0, 100, 'nm', 2],[167.0, 1, '%', 3],[216.0, 1.5, '%', 4],[240.0, 20, '%', 4],[269.0, 3, '%', 4]

Co
###Anisotropic magnetothermoelectric power of ferromagnetic thin films|M. S. Anwar,B. Lacoste,J. Aarts###
(1415930, 1415930)
 Surprisingly, both Py and Co films have opposite MTEP behavioralthough both have the same sign for AMR and TEP.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 100, 'K', 2],[154.0, 400, 'K', 2],[150.0, 25, 'nm', 1],[141.0, 50, 'nm', 1],[77.0, 0.2, '%', 1],[46.0, 100, 'nm', 1],[136.0, 1, '%', 2],[185.0, 1.5, '%', 3],[209.0, 20, '%', 3],[238.0, 3, '%', 3]

P
###Anisotropic magnetothermoelectric power of ferromagnetic thin films|M. S. Anwar,B. Lacoste,J. Aarts###
(1415941, 1415941)
 Surprisingly, both Py and Co films have opposite MTEP behavioralthough both have the same sign for AMR and TEP.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[168.0, 100, 'K', 2],[165.0, 400, 'K', 2],[161.0, 25, 'nm', 1],[152.0, 50, 'nm', 1],[88.0, 0.2, '%', 1],[35.0, 100, 'nm', 1],[125.0, 1, '%', 2],[174.0, 1.5, '%', 3],[198.0, 20, '%', 3],[227.0, 3, '%', 3]

P
###Anisotropic magnetothermoelectric power of ferromagnetic thin films|M. S. Anwar,B. Lacoste,J. Aarts###
(1415968, 1415968)
 Surprisingly, both Py and Co films have opposite MTEP behavioralthough both have the same sign for AMR and TEP.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[195.0, 100, 'K', 2],[192.0, 400, 'K', 2],[188.0, 25, 'nm', 1],[179.0, 50, 'nm', 1],[115.0, 0.2, '%', 1],[8.0, 100, 'nm', 1],[98.0, 1, '%', 2],[147.0, 1.5, '%', 3],[171.0, 20, '%', 3],[200.0, 3, '%', 3]

CrO2
###Anisotropic magnetothermoelectric power of ferromagnetic thin films|M. S. Anwar,B. Lacoste,J. Aarts###
(1415989, 1415991)
 The data on 100 nm films offully spin-polarized CrO2, grown both on TiO2 and on sapphire, show a differentpicture.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[216.0, 100, 'K', 3],[213.0, 400, 'K', 3],[209.0, 25, 'nm', 2],[200.0, 50, 'nm', 2],[136.0, 0.2, '%', 2],[13.0, 100, 'nm', 0],[75.0, 1, '%', 1],[124.0, 1.5, '%', 2],[148.0, 20, '%', 2],[177.0, 3, '%', 2]

TiO2
###Anisotropic magnetothermoelectric power of ferromagnetic thin films|M. S. Anwar,B. Lacoste,J. Aarts###
(1416000, 1416002)
 The data on 100 nm films offully spin-polarized CrO2, grown both on TiO2 and on sapphire, show a differentpicture.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[227.0, 100, 'K', 3],[224.0, 400, 'K', 3],[220.0, 25, 'nm', 2],[211.0, 50, 'nm', 2],[147.0, 0.2, '%', 2],[24.0, 100, 'nm', 0],[64.0, 1, '%', 1],[113.0, 1.5, '%', 2],[137.0, 20, '%', 2],[166.0, 3, '%', 2]

P
###Anisotropic magnetothermoelectric power of ferromagnetic thin films|M. S. Anwar,B. Lacoste,J. Aarts###
(1416026, 1416026)
 The MTEP behavior at low fields shows peaks similar to the AMR inthese films, with variations up to 1%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[253.0, 100, 'K', 4],[250.0, 400, 'K', 4],[246.0, 25, 'nm', 3],[237.0, 50, 'nm', 3],[173.0, 0.2, '%', 3],[50.0, 100, 'nm', 1],[40.0, 1, '%', 0],[89.0, 1.5, '%', 1],[113.0, 20, '%', 1],[142.0, 3, '%', 1]

P
###Anisotropic magnetothermoelectric power of ferromagnetic thin films|M. S. Anwar,B. Lacoste,J. Aarts###
(1416091, 1416091)
 With increasing field both the MR andthe MTEP variations keeps growing, with MTEP showing relative changes of 1.5%with the thermal gradient along the b<missing VAR>-axis and even 20% with the gradient alongthe c<missing VAR>-axis, with an intermediate value of 3% for the film on sapphire.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[318.0, 100, 'K', 5],[315.0, 400, 'K', 5],[311.0, 25, 'nm', 4],[302.0, 50, 'nm', 4],[238.0, 0.2, '%', 4],[115.0, 100, 'nm', 2],[25.0, 1, '%', 1],[24.0, 1.5, '%', 0],[48.0, 20, '%', 0],[77.0, 3, '%', 0]

P
###Anisotropic magnetothermoelectric power of ferromagnetic thin films|M. S. Anwar,B. Lacoste,J. Aarts###
(1416105, 1416105)
 With increasing field both the MR andthe MTEP variations keeps growing, with MTEP showing relative changes of 1.5%with the thermal gradient along the b<missing VAR>-axis and even 20% with the gradient alongthe c<missing VAR>-axis, with an intermediate value of 3% for the film on sapphire.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[332.0, 100, 'K', 5],[329.0, 400, 'K', 5],[325.0, 25, 'nm', 4],[316.0, 50, 'nm', 4],[252.0, 0.2, '%', 4],[129.0, 100, 'nm', 2],[39.0, 1, '%', 1],[10.0, 1.5, '%', 0],[34.0, 20, '%', 0],[63.0, 3, '%', 0]

CrO2
###Anisotropic magnetothermoelectric power of ferromagnetic thin films|M. S. Anwar,B. Lacoste,J. Aarts###
(1416235, 1416237)
 Itappears that the low-field effects are due to magnetic domain switching, whilethe high-field effects are intrinsic to the electronic structure of CrO2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[462.0, 100, 'K', 6],[459.0, 400, 'K', 6],[455.0, 25, 'nm', 5],[446.0, 50, 'nm', 5],[382.0, 0.2, '%', 5],[259.0, 100, 'nm', 3],[169.0, 1, '%', 2],[120.0, 1.5, '%', 1],[96.0, 20, '%', 1],[67.0, 3, '%', 1]

Tb5Si3
###Magnetic anomalies in single crystalline Tb5Si3|Kartik K. Iyer,K. Mukherjee,P. L. Paulose,E. V. Sampathkumaran,Y. Xu,W. Löser###
(1416258, 1416261)
Magnetic anomalies in single crystalline Tb5Si3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.375,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.625,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 69, 'K', 1],[211.0, 70, 'K', 4]

Tb5Si3
###Magnetic anomalies in single crystalline Tb5Si3|Kartik K. Iyer,K. Mukherjee,P. L. Paulose,E. V. Sampathkumaran,Y. Xu,W. Löser###
(1416277, 1416280)
 The polycrystalline form of the compound, Tb5Si3, crystallizing inMn5Si3-type hexagonal structure, which was earlier believe to orderantiferromagnetically below 69 K, has been recently reported by us to exhibitinteresting magnetoresistance (MR) anomalies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.375,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.625,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 69, 'K', 0],[192.0, 70, 'K', 3]

Mn5Si3
###Magnetic anomalies in single crystalline Tb5Si3|Kartik K. Iyer,K. Mukherjee,P. L. Paulose,E. V. Sampathkumaran,Y. Xu,W. Löser###
(1416288, 1416291)
 The polycrystalline form of the compound, Tb5Si3, crystallizing inMn5Si3-type hexagonal structure, which was earlier believe to orderantiferromagnetically below 69 K, has been recently reported by us to exhibitinteresting magnetoresistance (MR) anomalies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.375,0,0,0,0,0,0,0,0,0,0,0.625,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 69, 'K', 0],[181.0, 70, 'K', 3]

In
###Magnetic anomalies in single crystalline Tb5Si3|Kartik K. Iyer,K. Mukherjee,P. L. Paulose,E. V. Sampathkumaran,Y. Xu,W. Löser###
(1416348, 1416348)
 In order to understand themagnetic anomalies of this compound better, we synthesized single crystals ofthis compound and subjected them to intense magnetization and MR studies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 69, 'K', 1],[124.0, 70, 'K', 2]

In
###Magnetic anomalies in single crystalline Tb5Si3|Kartik K. Iyer,K. Mukherjee,P. L. Paulose,E. V. Sampathkumaran,Y. Xu,W. Löser###
(1416475, 1416475)
 In addition, there are multiple steps in isothermalmagnetization (which could not be resolved in the data for polycrystallinedata) for magnetic-field (H) along a basal plane.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[159.0, 69, 'K', 4],[3.0, 70, 'K', 1]

(H)
###Magnetic anomalies in single crystalline Tb5Si3|Kartik K. Iyer,K. Mukherjee,P. L. Paulose,E. V. Sampathkumaran,Y. Xu,W. Löser###
(1416526, 1416528)
 In addition, there are multiple steps in isothermalmagnetization (which could not be resolved in the data for polycrystallinedata) for magnetic-field (H) along a basal plane.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[210.0, 69, 'K', 4],[54.0, 70, 'K', 1]

H
###Magnetic anomalies in single crystalline Tb5Si3|Kartik K. Iyer,K. Mukherjee,P. L. Paulose,E. V. Sampathkumaran,Y. Xu,W. Löser###
(1416589, 1416589)
 The sign of MR is positive inthe magnetically ordered state, and, interestingly, the magnitude dramaticallyincreases at the initial step for H parallel to basal plane, but decreases atsubsequent steps as though the origin of these steps are different.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[273.0, 69, 'K', 5],[117.0, 70, 'K', 2]

H
###Magnetic anomalies in single crystalline Tb5Si3|Kartik K. Iyer,K. Mukherjee,P. L. Paulose,E. V. Sampathkumaran,Y. Xu,W. Löser###
(1416643, 1416643)
 However,for the perpendicular orientation (H  [0 0 0 1]), there is no evidence forany step either in M<missing VAR>(H) or in MR(H).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[327.0, 69, 'K', 6],[171.0, 70, 'K', 3]

(H)
###Magnetic anomalies in single crystalline Tb5Si3|Kartik K. Iyer,K. Mukherjee,P. L. Paulose,E. V. Sampathkumaran,Y. Xu,W. Löser###
(1416678, 1416680)
 However,for the perpendicular orientation (H  [0 0 0 1]), there is no evidence forany step either in M<missing VAR>(H) or in MR(H).
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[362.0, 69, 'K', 6],[206.0, 70, 'K', 3]

(H)
###Magnetic anomalies in single crystalline Tb5Si3|Kartik K. Iyer,K. Mukherjee,P. L. Paulose,E. V. Sampathkumaran,Y. Xu,W. Löser###
(1416688, 1416690)
 However,for the perpendicular orientation (H  [0 0 0 1]), there is no evidence forany step either in M<missing VAR>(H) or in MR(H).
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[372.0, 69, 'K', 6],[216.0, 70, 'K', 3]

BS
###Interplay between ferromagnetism, surface states, and quantum corrections in a magnetically doped topological insulator|Duming Zhang,Anthony Richardella,David W. Rench,Su-Yang Xu,Abhinav Kandala,Thomas C. Flanagan,Haim Beidenkopf,Andrew L. Yeats,Bob B. Buckley,Paul V. Klimov,David D. Awschalom,Ali Yazdani,Peter Schiffer,M. Zahid Hasan,Nitin Samarth###
(1416838, 1416839)
 Here, we report on a concerted set of structural, magnetic,electrical and spectroscopic measurements of M<missing VAR>BS thin films whereinphotoemission and x<missing VAR>-ray magnetic circular dichroism studies have recently shownsurface ferromagnetism in the temperature range 15 K leq T<missing VAR> leq 100 K,accompanied by a suppressed density of surface states at the Dirac point.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 15, 'K', 0]

K
###Interplay between ferromagnetism, surface states, and quantum corrections in a magnetically doped topological insulator|Duming Zhang,Anthony Richardella,David W. Rench,Su-Yang Xu,Abhinav Kandala,Thomas C. Flanagan,Haim Beidenkopf,Andrew L. Yeats,Bob B. Buckley,Paul V. Klimov,David D. Awschalom,Ali Yazdani,Peter Schiffer,M. Zahid Hasan,Nitin Samarth###
(1416892, 1416892)
 Here, we report on a concerted set of structural, magnetic,electrical and spectroscopic measurements of M<missing VAR>BS thin films whereinphotoemission and x<missing VAR>-ray magnetic circular dichroism studies have recently shownsurface ferromagnetism in the temperature range 15 K leq T<missing VAR> leq 100 K,accompanied by a suppressed density of surface states at the Dirac point.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 15, 'K', 0]

Mn
###Interplay between ferromagnetism, surface states, and quantum corrections in a magnetically doped topological insulator|Duming Zhang,Anthony Richardella,David W. Rench,Su-Yang Xu,Abhinav Kandala,Thomas C. Flanagan,Haim Beidenkopf,Andrew L. Yeats,Bob B. Buckley,Paul V. Klimov,David D. Awschalom,Ali Yazdani,Peter Schiffer,M. Zahid Hasan,Nitin Samarth###
(1416949, 1416949)
Secondary ion mass spectroscopy and scanning tunneling microscopy reveal aninhomogeneous distribution of Mn atoms, with a tendency to segregate towardsthe sample surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 15, 'K', 1]

K
###Interplay between ferromagnetism, surface states, and quantum corrections in a magnetically doped topological insulator|Duming Zhang,Anthony Richardella,David W. Rench,Su-Yang Xu,Abhinav Kandala,Thomas C. Flanagan,Haim Beidenkopf,Andrew L. Yeats,Bob B. Buckley,Paul V. Klimov,David D. Awschalom,Ali Yazdani,Peter Schiffer,M. Zahid Hasan,Nitin Samarth###
(1417031, 1417031)
 Magnetometry and anisotropic magnetoresistance measurementsare insensitive to the high temperature ferromagnetism seen in surface studies,revealing instead a low temperature ferromagnetic phase at T<missing VAR> lesssim 5 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 15, 'K', 2]

Fe3O4
###Influence of the substrate and precursor on the magnetic and magneto-transport properties in magnetite films|Enio Lima Jr,Giancarlo E. S. Brito,Christian Cavelius,Vladimir Sivakov,Hao Shen,Sanjay Mathur,Gerardo F. Goya###
(1417303, 1417306)
 We have investigated the magnetic and transport properties of nanoscaledFe3O4 films obtained from Chemical Vapor Deposition (CVD) technique using[FeIIFe2III(OBut)8] and [Fe2III(OBut)6] precursors.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 50, 'to', 2],[118.0, 350, 'nm', 2],[501.0, -3, '%', 9],[509.0, 1592, 'kA', 9]

CV
###Influence of the substrate and precursor on the magnetic and magneto-transport properties in magnetite films|Enio Lima Jr,Giancarlo E. S. Brito,Christian Cavelius,Vladimir Sivakov,Hao Shen,Sanjay Mathur,Gerardo F. Goya###
(1417321, 1417322)
 We have investigated the magnetic and transport properties of nanoscaledFe3O4 films obtained from Chemical Vapor Deposition (CVD) technique using[FeIIFe2III(OBut)8] and [Fe2III(OBut)6] precursors.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 50, 'to', 2],[102.0, 350, 'nm', 2],[485.0, -3, '%', 9],[493.0, 1592, 'kA', 9]

I
###Influence of the substrate and precursor on the magnetic and magneto-transport properties in magnetite films|Enio Lima Jr,Giancarlo E. S. Brito,Christian Cavelius,Vladimir Sivakov,Hao Shen,Sanjay Mathur,Gerardo F. Goya###
(1417339, 1417339)
 We have investigated the magnetic and transport properties of nanoscaledFe3O4 films obtained from Chemical Vapor Deposition (CVD) technique using[FeIIFe2III(OBut)8] and [Fe2III(OBut)6] precursors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 50, 'to', 2],[85.0, 350, 'nm', 2],[468.0, -3, '%', 9],[476.0, 1592, 'kA', 9]

O
###Influence of the substrate and precursor on the magnetic and magneto-transport properties in magnetite films|Enio Lima Jr,Giancarlo E. S. Brito,Christian Cavelius,Vladimir Sivakov,Hao Shen,Sanjay Mathur,Gerardo F. Goya###
(1417341, 1417341)
 We have investigated the magnetic and transport properties of nanoscaledFe3O4 films obtained from Chemical Vapor Deposition (CVD) technique using[FeIIFe2III(OBut)8] and [Fe2III(OBut)6] precursors.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 50, 'to', 2],[83.0, 350, 'nm', 2],[466.0, -3, '%', 9],[474.0, 1592, 'kA', 9]

I
###Influence of the substrate and precursor on the magnetic and magneto-transport properties in magnetite films|Enio Lima Jr,Giancarlo E. S. Brito,Christian Cavelius,Vladimir Sivakov,Hao Shen,Sanjay Mathur,Gerardo F. Goya###
(1417354, 1417354)
 We have investigated the magnetic and transport properties of nanoscaledFe3O4 films obtained from Chemical Vapor Deposition (CVD) technique using[FeIIFe2III(OBut)8] and [Fe2III(OBut)6] precursors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 50, 'to', 2],[70.0, 350, 'nm', 2],[453.0, -3, '%', 9],[461.0, 1592, 'kA', 9]

O
###Influence of the substrate and precursor on the magnetic and magneto-transport properties in magnetite films|Enio Lima Jr,Giancarlo E. S. Brito,Christian Cavelius,Vladimir Sivakov,Hao Shen,Sanjay Mathur,Gerardo F. Goya###
(1417356, 1417356)
 We have investigated the magnetic and transport properties of nanoscaledFe3O4 films obtained from Chemical Vapor Deposition (CVD) technique using[FeIIFe2III(OBut)8] and [Fe2III(OBut)6] precursors.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 50, 'to', 2],[68.0, 350, 'nm', 2],[451.0, -3, '%', 9],[459.0, 1592, 'kA', 9]

MgO
###Influence of the substrate and precursor on the magnetic and magneto-transport properties in magnetite films|Enio Lima Jr,Giancarlo E. S. Brito,Christian Cavelius,Vladimir Sivakov,Hao Shen,Sanjay Mathur,Gerardo F. Goya###
(1417385, 1417386)
, MgO (001), MgAl2O4 (001) and Al2O3 (0001)) withthicknesses varying from 50 to 350 nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 50, 'to', 0],[38.0, 350, 'nm', 0],[421.0, -3, '%', 7],[429.0, 1592, 'kA', 7]

MgAl2O4
###Influence of the substrate and precursor on the magnetic and magneto-transport properties in magnetite films|Enio Lima Jr,Giancarlo E. S. Brito,Christian Cavelius,Vladimir Sivakov,Hao Shen,Sanjay Mathur,Gerardo F. Goya###
(1417393, 1417397)
, MgO (001), MgAl2O4 (001) and Al2O3 (0001)) withthicknesses varying from 50 to 350 nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0.14285714285714285,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 50, 'to', 0],[27.0, 350, 'nm', 0],[410.0, -3, '%', 7],[418.0, 1592, 'kA', 7]

Al2O3
###Influence of the substrate and precursor on the magnetic and magneto-transport properties in magnetite films|Enio Lima Jr,Giancarlo E. S. Brito,Christian Cavelius,Vladimir Sivakov,Hao Shen,Sanjay Mathur,Gerardo F. Goya###
(1417405, 1417408)
, MgO (001), MgAl2O4 (001) and Al2O3 (0001)) withthicknesses varying from 50 to 350 nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 50, 'to', 0],[16.0, 350, 'nm', 0],[399.0, -3, '%', 7],[407.0, 1592, 'kA', 7]

I
###Influence of the substrate and precursor on the magnetic and magneto-transport properties in magnetite films|Enio Lima Jr,Giancarlo E. S. Brito,Christian Cavelius,Vladimir Sivakov,Hao Shen,Sanjay Mathur,Gerardo F. Goya###
(1417536, 1417536)
 Using [FeIIFe2III(OBut)8]as precursor resulted in lower resistivity, higher M<missing VAR>S and a sharpermagnetization decrease at the Verwey transition (T<missing VAR>V).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 50, 'to', 3],[112.0, 350, 'nm', 3],[271.0, -3, '%', 4],[279.0, 1592, 'kA', 4]

O
###Influence of the substrate and precursor on the magnetic and magneto-transport properties in magnetite films|Enio Lima Jr,Giancarlo E. S. Brito,Christian Cavelius,Vladimir Sivakov,Hao Shen,Sanjay Mathur,Gerardo F. Goya###
(1417538, 1417538)
 Using [FeIIFe2III(OBut)8]as precursor resulted in lower resistivity, higher M<missing VAR>S and a sharpermagnetization decrease at the Verwey transition (T<missing VAR>V).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 50, 'to', 3],[114.0, 350, 'nm', 3],[269.0, -3, '%', 4],[277.0, 1592, 'kA', 4]

S
###Influence of the substrate and precursor on the magnetic and magneto-transport properties in magnetite films|Enio Lima Jr,Giancarlo E. S. Brito,Christian Cavelius,Vladimir Sivakov,Hao Shen,Sanjay Mathur,Gerardo F. Goya###
(1417561, 1417561)
 Using [FeIIFe2III(OBut)8]as precursor resulted in lower resistivity, higher M<missing VAR>S and a sharpermagnetization decrease at the Verwey transition (T<missing VAR>V).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 50, 'to', 3],[137.0, 350, 'nm', 3],[246.0, -3, '%', 4],[254.0, 1592, 'kA', 4]

V
###Influence of the substrate and precursor on the magnetic and magneto-transport properties in magnetite films|Enio Lima Jr,Giancarlo E. S. Brito,Christian Cavelius,Vladimir Sivakov,Hao Shen,Sanjay Mathur,Gerardo F. Goya###
(1417584, 1417584)
 Using [FeIIFe2III(OBut)8]as precursor resulted in lower resistivity, higher M<missing VAR>S and a sharpermagnetization decrease at the Verwey transition (T<missing VAR>V).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 50, 'to', 3],[160.0, 350, 'nm', 3],[223.0, -3, '%', 4],[231.0, 1592, 'kA', 4]

F
###Influence of the substrate and precursor on the magnetic and magneto-transport properties in magnetite films|Enio Lima Jr,Giancarlo E. S. Brito,Christian Cavelius,Vladimir Sivakov,Hao Shen,Sanjay Mathur,Gerardo F. Goya###
(1417650, 1417650)
 Wefound that the transport is dominated by the density of antiferromagneticantiphase boundaries (AF-APBs) when [FeIIFe2III(OBut)8] precursor and Tpre 363 K are used.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[227.0, 50, 'to', 5],[226.0, 350, 'nm', 5],[157.0, -3, '%', 2],[165.0, 1592, 'kA', 2]

PB
###Influence of the substrate and precursor on the magnetic and magneto-transport properties in magnetite films|Enio Lima Jr,Giancarlo E. S. Brito,Christian Cavelius,Vladimir Sivakov,Hao Shen,Sanjay Mathur,Gerardo F. Goya###
(1417653, 1417654)
 Wefound that the transport is dominated by the density of antiferromagneticantiphase boundaries (AF-APBs) when [FeIIFe2III(OBut)8] precursor and Tpre 363 K are used.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[230.0, 50, 'to', 5],[229.0, 350, 'nm', 5],[153.0, -3, '%', 2],[161.0, 1592, 'kA', 2]

I
###Influence of the substrate and precursor on the magnetic and magneto-transport properties in magnetite films|Enio Lima Jr,Giancarlo E. S. Brito,Christian Cavelius,Vladimir Sivakov,Hao Shen,Sanjay Mathur,Gerardo F. Goya###
(1417668, 1417668)
 Wefound that the transport is dominated by the density of antiferromagneticantiphase boundaries (AF-APBs) when [FeIIFe2III(OBut)8] precursor and Tpre 363 K are used.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[245.0, 50, 'to', 5],[244.0, 350, 'nm', 5],[139.0, -3, '%', 2],[147.0, 1592, 'kA', 2]

O
###Influence of the substrate and precursor on the magnetic and magneto-transport properties in magnetite films|Enio Lima Jr,Giancarlo E. S. Brito,Christian Cavelius,Vladimir Sivakov,Hao Shen,Sanjay Mathur,Gerardo F. Goya###
(1417670, 1417670)
 Wefound that the transport is dominated by the density of antiferromagneticantiphase boundaries (AF-APBs) when [FeIIFe2III(OBut)8] precursor and Tpre 363 K are used.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[247.0, 50, 'to', 5],[246.0, 350, 'nm', 5],[137.0, -3, '%', 2],[145.0, 1592, 'kA', 2]

K
###Influence of the substrate and precursor on the magnetic and magneto-transport properties in magnetite films|Enio Lima Jr,Giancarlo E. S. Brito,Christian Cavelius,Vladimir Sivakov,Hao Shen,Sanjay Mathur,Gerardo F. Goya###
(1417686, 1417686)
 Wefound that the transport is dominated by the density of antiferromagneticantiphase boundaries (AF-APBs) when [FeIIFe2III(OBut)8] precursor and Tpre 363 K are used.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[263.0, 50, 'to', 5],[262.0, 350, 'nm', 5],[121.0, -3, '%', 2],[129.0, 1592, 'kA', 2]

I
###Influence of the substrate and precursor on the magnetic and magneto-transport properties in magnetite films|Enio Lima Jr,Giancarlo E. S. Brito,Christian Cavelius,Vladimir Sivakov,Hao Shen,Sanjay Mathur,Gerardo F. Goya###
(1417728, 1417728)
 On the other hand, grain boundary-scattering seems to be themain mechanism when [Fe2III(OBut)6] is used.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[305.0, 50, 'to', 6],[304.0, 350, 'nm', 6],[79.0, -3, '%', 1],[87.0, 1592, 'kA', 1]

O
###Influence of the substrate and precursor on the magnetic and magneto-transport properties in magnetite films|Enio Lima Jr,Giancarlo E. S. Brito,Christian Cavelius,Vladimir Sivakov,Hao Shen,Sanjay Mathur,Gerardo F. Goya###
(1417730, 1417730)
 On the other hand, grain boundary-scattering seems to be themain mechanism when [Fe2III(OBut)6] is used.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[307.0, 50, 'to', 6],[306.0, 350, 'nm', 6],[77.0, -3, '%', 1],[85.0, 1592, 'kA', 1]

(H)
###Influence of the substrate and precursor on the magnetic and magneto-transport properties in magnetite films|Enio Lima Jr,Giancarlo E. S. Brito,Christian Cavelius,Vladimir Sivakov,Hao Shen,Sanjay Mathur,Gerardo F. Goya###
(1417748, 1417750)
 The Magnetoresistance (MR(H))displayed an approximate linear behavior in the high field regime (H > 796k<missing VAR>A/m), with a maximum value at room-temperature of sim2-3% for H  1592 kA/m<missing VAR>,irrespective from the transport mechanism.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[325.0, 50, 'to', 7],[324.0, 350, 'nm', 7],[57.0, -3, '%', 0],[65.0, 1592, 'kA', 0]

H
###Influence of the substrate and precursor on the magnetic and magneto-transport properties in magnetite films|Enio Lima Jr,Giancarlo E. S. Brito,Christian Cavelius,Vladimir Sivakov,Hao Shen,Sanjay Mathur,Gerardo F. Goya###
(1417775, 1417775)
 The Magnetoresistance (MR(H))displayed an approximate linear behavior in the high field regime (H > 796k<missing VAR>A/m), with a maximum value at room-temperature of sim2-3% for H  1592 kA/m<missing VAR>,irrespective from the transport mechanism.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[352.0, 50, 'to', 7],[351.0, 350, 'nm', 7],[32.0, -3, '%', 0],[40.0, 1592, 'kA', 0]

H
###Influence of the substrate and precursor on the magnetic and magneto-transport properties in magnetite films|Enio Lima Jr,Giancarlo E. S. Brito,Christian Cavelius,Vladimir Sivakov,Hao Shen,Sanjay Mathur,Gerardo F. Goya###
(1417813, 1417813)
 The Magnetoresistance (MR(H))displayed an approximate linear behavior in the high field regime (H > 796k<missing VAR>A/m), with a maximum value at room-temperature of sim2-3% for H  1592 kA/m<missing VAR>,irrespective from the transport mechanism.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[390.0, 50, 'to', 7],[389.0, 350, 'nm', 7],[6.0, -3, '%', 0],[2.0, 1592, 'kA', 0]

S
###Experimental observation of the optical spin-orbit torque|N. Tesarova,P. Nemec,E. Rozkotova,J. Zemen,F. Trojanek,K. Olejnik,V. Novak,P. Maly,T. Jungwirth###
(1417895, 1417895)
 Spin polarized carriers electrically injected into a magnet from an externalpolarizer can exert a spin transfer torque (STT) on the magnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Experimental observation of the optical spin-orbit torque|N. Tesarova,P. Nemec,E. Rozkotova,J. Zemen,F. Trojanek,K. Olejnik,V. Novak,P. Maly,T. Jungwirth###
(1417976, 1417976)
 In ourprevious work we have reported experimental observation of the opticalcounterpart of STT in which a circularly polarized pump laser pulse acts as theexternal polarizer, allowing to study and utilize the phenomenon on severalorders of magnitude shorter timescales than in the electric current inducedSTT.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Experimental observation of the optical spin-orbit torque|N. Tesarova,P. Nemec,E. Rozkotova,J. Zemen,F. Trojanek,K. Olejnik,V. Novak,P. Maly,T. Jungwirth###
(1418006, 1418006)
 In ourprevious work we have reported experimental observation of the opticalcounterpart of STT in which a circularly polarized pump laser pulse acts as theexternal polarizer, allowing to study and utilize the phenomenon on severalorders of magnitude shorter timescales than in the electric current inducedSTT.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Experimental observation of the optical spin-orbit torque|N. Tesarova,P. Nemec,E. Rozkotova,J. Zemen,F. Trojanek,K. Olejnik,V. Novak,P. Maly,T. Jungwirth###
(1418080, 1418080)
 In ourprevious work we have reported experimental observation of the opticalcounterpart of STT in which a circularly polarized pump laser pulse acts as theexternal polarizer, allowing to study and utilize the phenomenon on severalorders of magnitude shorter timescales than in the electric current inducedSTT.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Experimental observation of the optical spin-orbit torque|N. Tesarova,P. Nemec,E. Rozkotova,J. Zemen,F. Trojanek,K. Olejnik,V. Novak,P. Maly,T. Jungwirth###
(1418186, 1418187)
 Recently it has been theoretically proposed and experimentallydemonstrated that in the absence of an external polarizer, carriers in a magnetunder applied electric field can develop a non-equilibrium spin polarizationdue to the relativistic spin-orbit coupling, resulting in a current inducedspin-orbit torque (SOT) acting on the magnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Experimental observation of the optical spin-orbit torque|N. Tesarova,P. Nemec,E. Rozkotova,J. Zemen,F. Trojanek,K. Olejnik,V. Novak,P. Maly,T. Jungwirth###
(1418200, 1418200)
 In this paper we reportthe observation of the optical counterpart of SOT<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Experimental observation of the optical spin-orbit torque|N. Tesarova,P. Nemec,E. Rozkotova,J. Zemen,F. Trojanek,K. Olejnik,V. Novak,P. Maly,T. Jungwirth###
(1418225, 1418226)
 In this paper we reportthe observation of the optical counterpart of SOT<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Experimental observation of the optical spin-orbit torque|N. Tesarova,P. Nemec,E. Rozkotova,J. Zemen,F. Trojanek,K. Olejnik,V. Novak,P. Maly,T. Jungwirth###
(1418230, 1418230)
 At picosecond time-scales,we detect excitations of magnetization of a ferromagnetic semiconductor(Ga,Mn)As which are independent of the polarization of the pump laser pulsesand are induced by non-equilibrium spin-orbit coupled photo-holes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###Experimental observation of the optical spin-orbit torque|N. Tesarova,P. Nemec,E. Rozkotova,J. Zemen,F. Trojanek,K. Olejnik,V. Novak,P. Maly,T. Jungwirth###
(1418260, 1418260)
 At picosecond time-scales,we detect excitations of magnetization of a ferromagnetic semiconductor(Ga,Mn)As which are independent of the polarization of the pump laser pulsesand are induced by non-equilibrium spin-orbit coupled photo-holes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Experimental observation of the optical spin-orbit torque|N. Tesarova,P. Nemec,E. Rozkotova,J. Zemen,F. Trojanek,K. Olejnik,V. Novak,P. Maly,T. Jungwirth###
(1418262, 1418262)
 At picosecond time-scales,we detect excitations of magnetization of a ferromagnetic semiconductor(Ga,Mn)As which are independent of the polarization of the pump laser pulsesand are induced by non-equilibrium spin-orbit coupled photo-holes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Experimental observation of the optical spin-orbit torque|N. Tesarova,P. Nemec,E. Rozkotova,J. Zemen,F. Trojanek,K. Olejnik,V. Novak,P. Maly,T. Jungwirth###
(1418264, 1418264)
 At picosecond time-scales,we detect excitations of magnetization of a ferromagnetic semiconductor(Ga,Mn)As which are independent of the polarization of the pump laser pulsesand are induced by non-equilibrium spin-orbit coupled photo-holes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BaFe2As2
###Ultrafast transient generation of spin-densitywave order in the normal state of BaFe2As2 driven by coherent lattice vibrations|K. W. Kim,A. Pashkin,H. Schäfer,M. Beyer,M. Porer,T. Wolf,C. Bernhard,J. Demsar,R. Huber,A. Leitenstorfer###
(1418344, 1418348)
Ultrafast transient generation of spin-densitywave order in the normal state of BaFe2As2 driven by coherent lattice vibrations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[396.0, 5.5, 'THz', 7]

S
###Ultrafast transient generation of spin-densitywave order in the normal state of BaFe2As2 driven by coherent lattice vibrations|K. W. Kim,A. Pashkin,H. Schäfer,M. Beyer,M. Porer,T. Wolf,C. Bernhard,J. Demsar,R. Huber,A. Leitenstorfer###
(1418579, 1418579)
 Here, we employ few-cycle multi-terahertz pulses to resonantly probe theevolution of the spin-density-wave (SD<missing VAR>W) gap of the pnictide compound BaFe2As2following excitation with a femtosecond optical pulse.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 5.5, 'THz', 3]

W
###Ultrafast transient generation of spin-densitywave order in the normal state of BaFe2As2 driven by coherent lattice vibrations|K. W. Kim,A. Pashkin,H. Schäfer,M. Beyer,M. Porer,T. Wolf,C. Bernhard,J. Demsar,R. Huber,A. Leitenstorfer###
(1418581, 1418581)
 Here, we employ few-cycle multi-terahertz pulses to resonantly probe theevolution of the spin-density-wave (SD<missing VAR>W) gap of the pnictide compound BaFe2As2following excitation with a femtosecond optical pulse.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 5.5, 'THz', 3]

BaFe2As2
###Ultrafast transient generation of spin-densitywave order in the normal state of BaFe2As2 driven by coherent lattice vibrations|K. W. Kim,A. Pashkin,H. Schäfer,M. Beyer,M. Porer,T. Wolf,C. Bernhard,J. Demsar,R. Huber,A. Leitenstorfer###
(1418594, 1418598)
 Here, we employ few-cycle multi-terahertz pulses to resonantly probe theevolution of the spin-density-wave (SD<missing VAR>W) gap of the pnictide compound BaFe2As2following excitation with a femtosecond optical pulse.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 5.5, 'THz', 3]

S
###Ultrafast transient generation of spin-densitywave order in the normal state of BaFe2As2 driven by coherent lattice vibrations|K. W. Kim,A. Pashkin,H. Schäfer,M. Beyer,M. Porer,T. Wolf,C. Bernhard,J. Demsar,R. Huber,A. Leitenstorfer###
(1418651, 1418651)
 When starting in thelow-temperature ground state, optical excitation results in a melting of theSD<missing VAR>W order, followed by ultrafast recovery.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 5.5, 'THz', 2]

W
###Ultrafast transient generation of spin-densitywave order in the normal state of BaFe2As2 driven by coherent lattice vibrations|K. W. Kim,A. Pashkin,H. Schäfer,M. Beyer,M. Porer,T. Wolf,C. Bernhard,J. Demsar,R. Huber,A. Leitenstorfer###
(1418653, 1418653)
 When starting in thelow-temperature ground state, optical excitation results in a melting of theSD<missing VAR>W order, followed by ultrafast recovery.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 5.5, 'THz', 2]

In
###Ultrafast transient generation of spin-densitywave order in the normal state of BaFe2As2 driven by coherent lattice vibrations|K. W. Kim,A. Pashkin,H. Schäfer,M. Beyer,M. Porer,T. Wolf,C. Bernhard,J. Demsar,R. Huber,A. Leitenstorfer###
(1418667, 1418667)
 In contrast, the SD<missing VAR>W gap is inducedwhen we excite the normal state above the transition temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 5.5, 'THz', 1]

S
###Ultrafast transient generation of spin-densitywave order in the normal state of BaFe2As2 driven by coherent lattice vibrations|K. W. Kim,A. Pashkin,H. Schäfer,M. Beyer,M. Porer,T. Wolf,C. Bernhard,J. Demsar,R. Huber,A. Leitenstorfer###
(1418674, 1418674)
 In contrast, the SD<missing VAR>W gap is inducedwhen we excite the normal state above the transition temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 5.5, 'THz', 1]

W
###Ultrafast transient generation of spin-densitywave order in the normal state of BaFe2As2 driven by coherent lattice vibrations|K. W. Kim,A. Pashkin,H. Schäfer,M. Beyer,M. Porer,T. Wolf,C. Bernhard,J. Demsar,R. Huber,A. Leitenstorfer###
(1418676, 1418676)
 In contrast, the SD<missing VAR>W gap is inducedwhen we excite the normal state above the transition temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 5.5, 'THz', 1]

Sn1
###Magnetic, magnetocaloric and magnetotransport properties of RSn_{1+x}Ge_{1-x} compounds (R=Gd, Tb, Er; x=0.1)|Sachin B. Gupta,K. G. Suresh,A. K. Nigam###
(1418835, 1418836)
Magnetic, magnetocaloric and magnetotransport properties of R<missing VAR>Sn1x<missing VAR>Ge1-x compounds (R<missing VAR>Gd, Tb, Er; x<missing VAR>0.1).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[340.0, 9.5, 'J', 8],[358.0, 3.2, 'K', 8],[367.0, 50, 'kOe', 8]

Ge1-x
###Magnetic, magnetocaloric and magnetotransport properties of RSn_{1+x}Ge_{1-x} compounds (R=Gd, Tb, Er; x=0.1)|Sachin B. Gupta,K. G. Suresh,A. K. Nigam###
(1418838, 1418841)
Magnetic, magnetocaloric and magnetotransport properties of R<missing VAR>Sn1x<missing VAR>Ge1-x compounds (R<missing VAR>Gd, Tb, Er; x<missing VAR>0.1).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[335.0, 9.5, 'J', 8],[353.0, 3.2, 'K', 8],[362.0, 50, 'kOe', 8]

Gd
###Magnetic, magnetocaloric and magnetotransport properties of RSn_{1+x}Ge_{1-x} compounds (R=Gd, Tb, Er; x=0.1)|Sachin B. Gupta,K. G. Suresh,A. K. Nigam###
(1418847, 1418847)
Magnetic, magnetocaloric and magnetotransport properties of R<missing VAR>Sn1x<missing VAR>Ge1-x compounds (R<missing VAR>Gd, Tb, Er; x<missing VAR>0.1).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[329.0, 9.5, 'J', 8],[347.0, 3.2, 'K', 8],[356.0, 50, 'kOe', 8]

Tb
###Magnetic, magnetocaloric and magnetotransport properties of RSn_{1+x}Ge_{1-x} compounds (R=Gd, Tb, Er; x=0.1)|Sachin B. Gupta,K. G. Suresh,A. K. Nigam###
(1418850, 1418850)
Magnetic, magnetocaloric and magnetotransport properties of R<missing VAR>Sn1x<missing VAR>Ge1-x compounds (R<missing VAR>Gd, Tb, Er; x<missing VAR>0.1).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[326.0, 9.5, 'J', 8],[344.0, 3.2, 'K', 8],[353.0, 50, 'kOe', 8]

Er
###Magnetic, magnetocaloric and magnetotransport properties of RSn_{1+x}Ge_{1-x} compounds (R=Gd, Tb, Er; x=0.1)|Sachin B. Gupta,K. G. Suresh,A. K. Nigam###
(1418853, 1418853)
Magnetic, magnetocaloric and magnetotransport properties of R<missing VAR>Sn1x<missing VAR>Ge1-x compounds (R<missing VAR>Gd, Tb, Er; x<missing VAR>0.1).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[323.0, 9.5, 'J', 8],[341.0, 3.2, 'K', 8],[350.0, 50, 'kOe', 8]

Sn1
###Magnetic, magnetocaloric and magnetotransport properties of RSn_{1+x}Ge_{1-x} compounds (R=Gd, Tb, Er; x=0.1)|Sachin B. Gupta,K. G. Suresh,A. K. Nigam###
(1418884, 1418885)
 We have studied the magnetic, magnetocaloric and magnetotransport propertiesof R<missing VAR>Sn1x<missing VAR>Ge1-x(RGd, Tb, Er; x<missing VAR>0.1) series by means of magnetization, heatcapacity and resistivity measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[291.0, 9.5, 'J', 7],[309.0, 3.2, 'K', 7],[318.0, 50, 'kOe', 7]

Gd
###Magnetic, magnetocaloric and magnetotransport properties of RSn_{1+x}Ge_{1-x} compounds (R=Gd, Tb, Er; x=0.1)|Sachin B. Gupta,K. G. Suresh,A. K. Nigam###
(1418893, 1418893)
 We have studied the magnetic, magnetocaloric and magnetotransport propertiesof R<missing VAR>Sn1x<missing VAR>Ge1-x(RGd, Tb, Er; x<missing VAR>0.1) series by means of magnetization, heatcapacity and resistivity measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[283.0, 9.5, 'J', 7],[301.0, 3.2, 'K', 7],[310.0, 50, 'kOe', 7]

Tb
###Magnetic, magnetocaloric and magnetotransport properties of RSn_{1+x}Ge_{1-x} compounds (R=Gd, Tb, Er; x=0.1)|Sachin B. Gupta,K. G. Suresh,A. K. Nigam###
(1418896, 1418896)
 We have studied the magnetic, magnetocaloric and magnetotransport propertiesof R<missing VAR>Sn1x<missing VAR>Ge1-x(RGd, Tb, Er; x<missing VAR>0.1) series by means of magnetization, heatcapacity and resistivity measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[280.0, 9.5, 'J', 7],[298.0, 3.2, 'K', 7],[307.0, 50, 'kOe', 7]

Er
###Magnetic, magnetocaloric and magnetotransport properties of RSn_{1+x}Ge_{1-x} compounds (R=Gd, Tb, Er; x=0.1)|Sachin B. Gupta,K. G. Suresh,A. K. Nigam###
(1418899, 1418899)
 We have studied the magnetic, magnetocaloric and magnetotransport propertiesof R<missing VAR>Sn1x<missing VAR>Ge1-x(RGd, Tb, Er; x<missing VAR>0.1) series by means of magnetization, heatcapacity and resistivity measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[277.0, 9.5, 'J', 7],[295.0, 3.2, 'K', 7],[304.0, 50, 'kOe', 7]

No
###Magnetic, magnetocaloric and magnetotransport properties of RSn_{1+x}Ge_{1-x} compounds (R=Gd, Tb, Er; x=0.1)|Sachin B. Gupta,K. G. Suresh,A. K. Nigam###
(1418974, 1418974)
 It has been found that all the compoundscrystallize in the orthorhombic crystal structure described by thecentrosymmetric space group Cmcm (No.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0
[202.0, 9.5, 'J', 6],[220.0, 3.2, 'K', 6],[229.0, 50, 'kOe', 6]

GdSn1.1Ge0.9
###Magnetic, magnetocaloric and magnetotransport properties of RSn_{1+x}Ge_{1-x} compounds (R=Gd, Tb, Er; x=0.1)|Sachin B. Gupta,K. G. Suresh,A. K. Nigam###
(1419029, 1419033)
 Largenegative values of thetap<missing VAR> in case of GdSn1.1Ge0.9 and TbSn1.1Ge0.9 indicatethat strong antiferromagnetic interactions are involved, which is alsoreflected in the magnetization isotherms.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3666666666666667,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 9.5, 'J', 3],[161.0, 3.2, 'K', 3],[170.0, 50, 'kOe', 3]

TbSn1.1Ge0.9
###Magnetic, magnetocaloric and magnetotransport properties of RSn_{1+x}Ge_{1-x} compounds (R=Gd, Tb, Er; x=0.1)|Sachin B. Gupta,K. G. Suresh,A. K. Nigam###
(1419037, 1419041)
 Largenegative values of thetap<missing VAR> in case of GdSn1.1Ge0.9 and TbSn1.1Ge0.9 indicatethat strong antiferromagnetic interactions are involved, which is alsoreflected in the magnetization isotherms.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3666666666666667,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 9.5, 'J', 3],[153.0, 3.2, 'K', 3],[162.0, 50, 'kOe', 3]

ErSn1.1Ge0.9
###Magnetic, magnetocaloric and magnetotransport properties of RSn_{1+x}Ge_{1-x} compounds (R=Gd, Tb, Er; x=0.1)|Sachin B. Gupta,K. G. Suresh,A. K. Nigam###
(1419085, 1419089)
 On the other hand ErSn1.1Ge0.9 showsweak antiferromagnetic interaction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3666666666666667,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 9.5, 'J', 2],[105.0, 3.2, 'K', 2],[114.0, 50, 'kOe', 2]

ErSn1.1Ge0.9
###Magnetic, magnetocaloric and magnetotransport properties of RSn_{1+x}Ge_{1-x} compounds (R=Gd, Tb, Er; x=0.1)|Sachin B. Gupta,K. G. Suresh,A. K. Nigam###
(1419158, 1419162)
 Among these three compounds, ErSn1.1Ge0.9 showsconsiderable magnetic entropy change of 9.5 J/kg K and an adiabatic temperaturechange of 3.2 K for a field of 50 kOe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3666666666666667,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 9.5, 'J', 0],[32.0, 3.2, 'K', 0],[41.0, 50, 'kOe', 0]

K
###Magnetic, magnetocaloric and magnetotransport properties of RSn_{1+x}Ge_{1-x} compounds (R=Gd, Tb, Er; x=0.1)|Sachin B. Gupta,K. G. Suresh,A. K. Nigam###
(1419180, 1419180)
 Among these three compounds, ErSn1.1Ge0.9 showsconsiderable magnetic entropy change of 9.5 J/kg K and an adiabatic temperaturechange of 3.2 K for a field of 50 kOe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 9.5, 'J', 0],[14.0, 3.2, 'K', 0],[23.0, 50, 'kOe', 0]

CaCu1.7As2
###Observation of a Phase Transition at 55 K in Single-Crystal CaCu1.7As2|V. K. Anand,D. C. Johnston###
(1419287, 1419291)
Observation of a Phase Transition at 55 K in Single-Crystal CaCu1.7As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2127659574468085,0,0,0,0,0,0,0,0,0.36170212765957444,0,0,0,0.425531914893617,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 55, 'K', 0],[173.0, 15, '%', 2],[528.0, 8, 'T', 9],[568.0, 8.0, 'T', 10],[572.0, 8.7, '%', 10],[579.0, 1.8, 'K', 10]

CaCu1.7As2
###Observation of a Phase Transition at 55 K in Single-Crystal CaCu1.7As2|V. K. Anand,D. C. Johnston###
(1419329, 1419333)
 We present the structural, magnetic, thermal and ab-plane electronictransport properties of single crystals of CaCu1.7As2 grown by the self-fluxtechnique that were investigated by powder x<missing VAR>-ray diffraction, magneticsusceptibility chi, isothermal magnetization M<missing VAR>, specific heat Cp, andelectrical resistivity rho measurements as a function of temperature T<missing VAR> andmagnetic field H.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2127659574468085,0,0,0,0,0,0,0,0,0.36170212765957444,0,0,0,0.425531914893617,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 55, 'K', 1],[131.0, 15, '%', 1],[486.0, 8, 'T', 8],[526.0, 8.0, 'T', 9],[530.0, 8.7, '%', 9],[537.0, 1.8, 'K', 9]

H
###Observation of a Phase Transition at 55 K in Single-Crystal CaCu1.7As2|V. K. Anand,D. C. Johnston###
(1419417, 1419417)
 We present the structural, magnetic, thermal and ab-plane electronictransport properties of single crystals of CaCu1.7As2 grown by the self-fluxtechnique that were investigated by powder x<missing VAR>-ray diffraction, magneticsusceptibility chi, isothermal magnetization M<missing VAR>, specific heat Cp, andelectrical resistivity rho measurements as a function of temperature T<missing VAR> andmagnetic field H.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 55, 'K', 1],[47.0, 15, '%', 1],[402.0, 8, 'T', 8],[442.0, 8.0, 'T', 9],[446.0, 8.7, '%', 9],[453.0, 1.8, 'K', 9]

ThCr2Si2
###Observation of a Phase Transition at 55 K in Single-Crystal CaCu1.7As2|V. K. Anand,D. C. Johnston###
(1419449, 1419453)
 X<missing VAR>-ray diffraction analysis of crushed crystals at roomtemperature confirm the collapsed tetragonal ThCr2Si2-type structure with sim15% vacancies on the Cu sites as previously reported, corresponding to thecomposition CaCu1.7As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0
[170.0, 55, 'K', 2],[11.0, 15, '%', 0],[366.0, 8, 'T', 7],[406.0, 8.0, 'T', 8],[410.0, 8.7, '%', 8],[417.0, 1.8, 'K', 8]

Cu
###Observation of a Phase Transition at 55 K in Single-Crystal CaCu1.7As2|V. K. Anand,D. C. Johnston###
(1419473, 1419473)
 X<missing VAR>-ray diffraction analysis of crushed crystals at roomtemperature confirm the collapsed tetragonal ThCr2Si2-type structure with sim15% vacancies on the Cu sites as previously reported, corresponding to thecomposition CaCu1.7As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[194.0, 55, 'K', 2],[9.0, 15, '%', 0],[346.0, 8, 'T', 7],[386.0, 8.0, 'T', 8],[390.0, 8.7, '%', 8],[397.0, 1.8, 'K', 8]

CaCu1.7As2
###Observation of a Phase Transition at 55 K in Single-Crystal CaCu1.7As2|V. K. Anand,D. C. Johnston###
(1419493, 1419497)
 X<missing VAR>-ray diffraction analysis of crushed crystals at roomtemperature confirm the collapsed tetragonal ThCr2Si2-type structure with sim15% vacancies on the Cu sites as previously reported, corresponding to thecomposition CaCu1.7As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2127659574468085,0,0,0,0,0,0,0,0,0.36170212765957444,0,0,0,0.425531914893617,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[214.0, 55, 'K', 2],[29.0, 15, '%', 0],[322.0, 8, 'T', 7],[362.0, 8.0, 'T', 8],[366.0, 8.7, '%', 8],[373.0, 1.8, 'K', 8]

SrCu2As2
###Observation of a Phase Transition at 55 K in Single-Crystal CaCu1.7As2|V. K. Anand,D. C. Johnston###
(1419566, 1419570)
 The chi is larger in the ab-plane than along the c<missing VAR>-axis, asalso observed previously for SrCu2As2 and for pure and doped BaFe2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0.4,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[287.0, 55, 'K', 4],[102.0, 15, '%', 2],[249.0, 8, 'T', 5],[289.0, 8.0, 'T', 6],[293.0, 8.7, '%', 6],[300.0, 1.8, 'K', 6]

BaFe2As2
###Observation of a Phase Transition at 55 K in Single-Crystal CaCu1.7As2|V. K. Anand,D. C. Johnston###
(1419582, 1419586)
 The chi is larger in the ab-plane than along the c<missing VAR>-axis, asalso observed previously for SrCu2As2 and for pure and doped BaFe2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[303.0, 55, 'K', 4],[118.0, 15, '%', 2],[233.0, 8, 'T', 5],[273.0, 8.0, 'T', 6],[277.0, 8.7, '%', 6],[284.0, 1.8, 'K', 6]

In
###Observation of a Phase Transition at 55 K in Single-Crystal CaCu1.7As2|V. K. Anand,D. C. Johnston###
(1419617, 1419617)
 In contrast to thechi(T) and Cp(T) data that do not show any evidence for phase transitions below300 K, the rho(T) data exhibit a sharp increase in slope on cooling below atemperature Tt  54-56 K, depending on the crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[338.0, 55, 'K', 6],[153.0, 15, '%', 4],[202.0, 8, 'T', 3],[242.0, 8.0, 'T', 4],[246.0, 8.7, '%', 4],[253.0, 1.8, 'K', 4]

K
###Observation of a Phase Transition at 55 K in Single-Crystal CaCu1.7As2|V. K. Anand,D. C. Johnston###
(1419663, 1419663)
 In contrast to thechi(T) and Cp(T) data that do not show any evidence for phase transitions below300 K, the rho(T) data exhibit a sharp increase in slope on cooling below atemperature Tt  54-56 K, depending on the crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[384.0, 55, 'K', 6],[199.0, 15, '%', 4],[156.0, 8, 'T', 3],[196.0, 8.0, 'T', 4],[200.0, 8.7, '%', 4],[207.0, 1.8, 'K', 4]

K
###Observation of a Phase Transition at 55 K in Single-Crystal CaCu1.7As2|V. K. Anand,D. C. Johnston###
(1419705, 1419705)
 In contrast to thechi(T) and Cp(T) data that do not show any evidence for phase transitions below300 K, the rho(T) data exhibit a sharp increase in slope on cooling below atemperature Tt  54-56 K, depending on the crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[426.0, 55, 'K', 6],[241.0, 15, '%', 4],[114.0, 8, 'T', 3],[154.0, 8.0, 'T', 4],[158.0, 8.7, '%', 4],[165.0, 1.8, 'K', 4]

Cu
###Observation of a Phase Transition at 55 K in Single-Crystal CaCu1.7As2|V. K. Anand,D. C. Johnston###
(1419790, 1419790)
 The phase transition may arise from spatial ordering of thevacancies on the Cu sublattice.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[511.0, 55, 'K', 8],[326.0, 15, '%', 6],[29.0, 8, 'T', 1],[69.0, 8.0, 'T', 2],[73.0, 8.7, '%', 2],[80.0, 1.8, 'K', 2]

H
###Observation of a Phase Transition at 55 K in Single-Crystal CaCu1.7As2|V. K. Anand,D. C. Johnston###
(1419811, 1419811)
 The Tt is found to be independent of H for Hleq 8 T.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[532.0, 55, 'K', 9],[347.0, 15, '%', 7],[8.0, 8, 'T', 0],[48.0, 8.0, 'T', 1],[52.0, 8.7, '%', 1],[59.0, 1.8, 'K', 1]

H
###Observation of a Phase Transition at 55 K in Single-Crystal CaCu1.7As2|V. K. Anand,D. C. Johnston###
(1419815, 1419815)
 The Tt is found to be independent of H for Hleq 8 T.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[536.0, 55, 'K', 9],[351.0, 15, '%', 7],[4.0, 8, 'T', 0],[44.0, 8.0, 'T', 1],[48.0, 8.7, '%', 1],[55.0, 1.8, 'K', 1]

H
###Observation of a Phase Transition at 55 K in Single-Crystal CaCu1.7As2|V. K. Anand,D. C. Johnston###
(1419857, 1419857)
 A positive magnetoresistance is observed below Tt that increases withdecreasing T<missing VAR> and attains a value in H  8.0 T of 8.7% at T<missing VAR>  1.8 K.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[578.0, 55, 'K', 10],[393.0, 15, '%', 8],[38.0, 8, 'T', 1],[2.0, 8.0, 'T', 0],[6.0, 8.7, '%', 0],[13.0, 1.8, 'K', 0]

LaAlO3/SrTiO3
###A Gate-tunable Polarized Phase of Two-Dimensional Electrons at the LaAlO3/SrTiO3 Interface|Arjun Joshua,J. Ruhman,S. Pecker,E. Altman,S. Ilani###
(1419903, 1419911)
A Gate-tunable Polarized Phase of Two-Dimensional Electrons at the LaAlO3/SrTiO3 Interface.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[55.0, 2, 'D', 2]

LaAlO3
###A Gate-tunable Polarized Phase of Two-Dimensional Electrons at the LaAlO3/SrTiO3 Interface|Arjun Joshua,J. Ruhman,S. Pecker,E. Altman,S. Ilani###
(1419978, 1419981)
 A novel system featuring local magnetic momentsand extended 2D electrons is the interface between LaAlO3 and SrTiO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 2, 'D', 0]

SrTiO3
###A Gate-tunable Polarized Phase of Two-Dimensional Electrons at the LaAlO3/SrTiO3 Interface|Arjun Joshua,J. Ruhman,S. Pecker,E. Altman,S. Ilani###
(1419985, 1419988)
 A novel system featuring local magnetic momentsand extended 2D electrons is the interface between LaAlO3 and SrTiO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 2, 'D', 0]

LaAlO3/SrTiO3
###A Gate-tunable Polarized Phase of Two-Dimensional Electrons at the LaAlO3/SrTiO3 Interface|Arjun Joshua,J. Ruhman,S. Pecker,E. Altman,S. Ilani###
(1420082, 1420090)
 Here we show the existence ofunconventional electronic phases in the LaAlO3/SrTiO3 system pointing to anunderlying tunable coupling between itinerant electrons and localized moments.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[116.0, 2, 'D', 2]

At
###A Gate-tunable Polarized Phase of Two-Dimensional Electrons at the LaAlO3/SrTiO3 Interface|Arjun Joshua,J. Ruhman,S. Pecker,E. Altman,S. Ilani###
(1420181, 1420181)
 At high densities and fields, theelectronic system is strongly polarized and shows a response, which is highlyanisotropic along the crystalline directions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[215.0, 2, 'D', 4]

LaAlO3/SrTiO3
###A Gate-tunable Polarized Phase of Two-Dimensional Electrons at the LaAlO3/SrTiO3 Interface|Arjun Joshua,J. Ruhman,S. Pecker,E. Altman,S. Ilani###
(1420376, 1420384)
 The observed interplay between the twophases indicates the nature of magnetism at the LaAlO3/SrTiO3 interface as bothhaving an intrinsic origin and being tunable.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[410.0, 2, 'D', 7]

In
###Gate tunable quantum transport in double layer graphene|K. Kechedzhi,E. H. Hwang,S. Das Sarma###
(1420624, 1420624)
 In particular, only a moderate suppression ofelectron-hole puddles around the Dirac point induced by the high concentrationof remote impurities in the silicon oxide substrate could be achieved.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Gate tunable quantum transport in double layer graphene|K. Kechedzhi,E. H. Hwang,S. Das Sarma###
(1420796, 1420796)
 Inparticular, the dephasing rate is strongly suppressed by the additionalscreening that supresses the amplitude of electron-electron interaction andreduces the diffusion time that electrons spend in proximity of each other.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

InO
###Microwave Spectroscopy Evidence of Superconducting Pairing in the Magnetic-Field-Induced Metallic State of InO$_x$ Films at Zero Temperature|Wei Liu,LiDong Pan,Jiajia Wen,Minsoo Kim,G. Sambandamurthy,N. P. Armitage###
(1420995, 1420996)
Microwave Spectroscopy Evidence of Superconducting Pairing in the Magnetic-Field-Induced Metallic State of InOx<missing VAR> Films at Zero Temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 2, 'D', 1],[55.0, 0.05, 'to', 1],[56.0, 16, 'GHz', 1],[250.0, 2, 'D', 5]

InO
###Microwave Spectroscopy Evidence of Superconducting Pairing in the Magnetic-Field-Induced Metallic State of InO$_x$ Films at Zero Temperature|Wei Liu,LiDong Pan,Jiajia Wen,Minsoo Kim,G. Sambandamurthy,N. P. Armitage###
(1421036, 1421037)
 We investigate the field tuned quantum phase transition in a 2D low-disorderamorphous InOx<missing VAR> film in the frequency range of 0.05 to 16 GHz employingmicrowave spectroscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 2, 'D', 0],[14.0, 0.05, 'to', 0],[15.0, 16, 'GHz', 0],[209.0, 2, 'D', 4]

In
###Microwave Spectroscopy Evidence of Superconducting Pairing in the Magnetic-Field-Induced Metallic State of InO$_x$ Films at Zero Temperature|Wei Liu,LiDong Pan,Jiajia Wen,Minsoo Kim,G. Sambandamurthy,N. P. Armitage###
(1421062, 1421062)
 In the zero temperature limit, the AC data areconsistent with a scenario where this transition is from a superconductor to ametal instead of a direct transition to an insulator.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 2, 'D', 1],[11.0, 0.05, 'to', 1],[10.0, 16, 'GHz', 1],[184.0, 2, 'D', 3]

C
###Microwave Spectroscopy Evidence of Superconducting Pairing in the Magnetic-Field-Induced Metallic State of InO$_x$ Films at Zero Temperature|Wei Liu,LiDong Pan,Jiajia Wen,Minsoo Kim,G. Sambandamurthy,N. P. Armitage###
(1421076, 1421076)
 In the zero temperature limit, the AC data areconsistent with a scenario where this transition is from a superconductor to ametal instead of a direct transition to an insulator.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 2, 'D', 1],[25.0, 0.05, 'to', 1],[24.0, 16, 'GHz', 1],[170.0, 2, 'D', 3]

B
###Microwave Spectroscopy Evidence of Superconducting Pairing in the Magnetic-Field-Induced Metallic State of InO$_x$ Films at Zero Temperature|Wei Liu,LiDong Pan,Jiajia Wen,Minsoo Kim,G. Sambandamurthy,N. P. Armitage###
(1421265, 1421265)
 We present evidence thatthe true quantum critical point of this 2D superconductor metal transition islocated at a field Bsm far below the conventionally defined critical fieldBcross where different isotherms of magnetoresistance cross each other.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[238.0, 2, 'D', 4],[214.0, 0.05, 'to', 4],[213.0, 16, 'GHz', 4],[19.0, 2, 'D', 0]

B
###Microwave Spectroscopy Evidence of Superconducting Pairing in the Magnetic-Field-Induced Metallic State of InO$_x$ Films at Zero Temperature|Wei Liu,LiDong Pan,Jiajia Wen,Minsoo Kim,G. Sambandamurthy,N. P. Armitage###
(1421283, 1421283)
 We present evidence thatthe true quantum critical point of this 2D superconductor metal transition islocated at a field Bsm far below the conventionally defined critical fieldBcross where different isotherms of magnetoresistance cross each other.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[256.0, 2, 'D', 4],[232.0, 0.05, 'to', 4],[231.0, 16, 'GHz', 4],[37.0, 2, 'D', 0]

B
###Microwave Spectroscopy Evidence of Superconducting Pairing in the Magnetic-Field-Induced Metallic State of InO$_x$ Films at Zero Temperature|Wei Liu,LiDong Pan,Jiajia Wen,Minsoo Kim,G. Sambandamurthy,N. P. Armitage###
(1421349, 1421349)
The superfluid stiffness in the low frequency limit and the superconductingfluctuation frequency from opposite sides of the transition both vanish at Bapprox Bsm.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[322.0, 2, 'D', 5],[298.0, 0.05, 'to', 5],[297.0, 16, 'GHz', 5],[103.0, 2, 'D', 1]

B
###Microwave Spectroscopy Evidence of Superconducting Pairing in the Magnetic-Field-Induced Metallic State of InO$_x$ Films at Zero Temperature|Wei Liu,LiDong Pan,Jiajia Wen,Minsoo Kim,G. Sambandamurthy,N. P. Armitage###
(1421354, 1421354)
The superfluid stiffness in the low frequency limit and the superconductingfluctuation frequency from opposite sides of the transition both vanish at Bapprox Bsm.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[327.0, 2, 'D', 5],[303.0, 0.05, 'to', 5],[302.0, 16, 'GHz', 5],[108.0, 2, 'D', 1]

B
###Microwave Spectroscopy Evidence of Superconducting Pairing in the Magnetic-Field-Induced Metallic State of InO$_x$ Films at Zero Temperature|Wei Liu,LiDong Pan,Jiajia Wen,Minsoo Kim,G. Sambandamurthy,N. P. Armitage###
(1421379, 1421379)
 The lack of evidence for finite-frequency superfluidstiffness surviving Bcross signifies that Bcross is a crossover abovewhich superconducting fluctuations make a vanishing contribution to D<missing VAR>C and ACmeasurements.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[352.0, 2, 'D', 6],[328.0, 0.05, 'to', 6],[327.0, 16, 'GHz', 6],[133.0, 2, 'D', 2]

B
###Microwave Spectroscopy Evidence of Superconducting Pairing in the Magnetic-Field-Induced Metallic State of InO$_x$ Films at Zero Temperature|Wei Liu,LiDong Pan,Jiajia Wen,Minsoo Kim,G. Sambandamurthy,N. P. Armitage###
(1421386, 1421386)
 The lack of evidence for finite-frequency superfluidstiffness surviving Bcross signifies that Bcross is a crossover abovewhich superconducting fluctuations make a vanishing contribution to D<missing VAR>C and ACmeasurements.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[359.0, 2, 'D', 6],[335.0, 0.05, 'to', 6],[334.0, 16, 'GHz', 6],[140.0, 2, 'D', 2]

C
###Microwave Spectroscopy Evidence of Superconducting Pairing in the Magnetic-Field-Induced Metallic State of InO$_x$ Films at Zero Temperature|Wei Liu,LiDong Pan,Jiajia Wen,Minsoo Kim,G. Sambandamurthy,N. P. Armitage###
(1421415, 1421415)
 The lack of evidence for finite-frequency superfluidstiffness surviving Bcross signifies that Bcross is a crossover abovewhich superconducting fluctuations make a vanishing contribution to D<missing VAR>C and ACmeasurements.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[388.0, 2, 'D', 6],[364.0, 0.05, 'to', 6],[363.0, 16, 'GHz', 6],[169.0, 2, 'D', 2]

C
###Microwave Spectroscopy Evidence of Superconducting Pairing in the Magnetic-Field-Induced Metallic State of InO$_x$ Films at Zero Temperature|Wei Liu,LiDong Pan,Jiajia Wen,Minsoo Kim,G. Sambandamurthy,N. P. Armitage###
(1421420, 1421420)
 The lack of evidence for finite-frequency superfluidstiffness surviving Bcross signifies that Bcross is a crossover abovewhich superconducting fluctuations make a vanishing contribution to D<missing VAR>C and ACmeasurements.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[393.0, 2, 'D', 6],[369.0, 0.05, 'to', 6],[368.0, 16, 'GHz', 6],[174.0, 2, 'D', 2]

In
###Multiscale modeling in micromagnetics: existence of solutions and numerical integration|Florian Bruckner,Michael Feischl,Thomas Führer,Petra Goldenits,Marcus Page,Dirk Praetorius,Michele Ruggeri,Dieter Suess###
(1421705, 1421705)
 In our work, we prove that under certain assumptions on thenon-linear material law, this multiscale version of LLG admits weak solutions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H1
###Multiscale modeling in micromagnetics: existence of solutions and numerical integration|Florian Bruckner,Michael Feischl,Thomas Führer,Petra Goldenits,Marcus Page,Dirk Praetorius,Michele Ruggeri,Dieter Suess###
(1421818, 1421819)
Our proof is constructive in the sense that we provide a linear-implicitnumerical integrator for the multiscale model such that the numericallycomputable finite element solutions admit weak H1-convergence (at least fora subsequence) towards a weak solution.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NdRu2Ge2
###Anomalous magnetoresistance and magnetocaloric properties of NdRu2Ge2|Bibekananda Maji,K. G. Suresh,A. K. Nigam###
(1421865, 1421869)
Anomalous magnetoresistance and magnetocaloric properties of NdRu2Ge2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 10, 'kOe', 3],[138.0, 30, 'kOe', 3],[161.0, 9, 'K', 4],[164.0, 30, 'kOe', 4],[208.0, 42, '%', 5],[219.0, 30, 'kOe', 5],[240.0, 3, 'K', 5]

NdRu2Ge2
###Anomalous magnetoresistance and magnetocaloric properties of NdRu2Ge2|Bibekananda Maji,K. G. Suresh,A. K. Nigam###
(1421884, 1421888)
 It is found that the polycrystalline NdRu2Ge2 undergoes two successivemagnetic transitions at Tt10 K and T<missing VAR>N19 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 10, 'kOe', 2],[119.0, 30, 'kOe', 2],[142.0, 9, 'K', 3],[145.0, 30, 'kOe', 3],[189.0, 42, '%', 4],[200.0, 30, 'kOe', 4],[221.0, 3, 'K', 4]

K
###Anomalous magnetoresistance and magnetocaloric properties of NdRu2Ge2|Bibekananda Maji,K. G. Suresh,A. K. Nigam###
(1421906, 1421906)
 It is found that the polycrystalline NdRu2Ge2 undergoes two successivemagnetic transitions at Tt10 K and T<missing VAR>N19 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 10, 'kOe', 2],[101.0, 30, 'kOe', 2],[124.0, 9, 'K', 3],[127.0, 30, 'kOe', 3],[171.0, 42, '%', 4],[182.0, 30, 'kOe', 4],[203.0, 3, 'K', 4]

N19
###Anomalous magnetoresistance and magnetocaloric properties of NdRu2Ge2|Bibekananda Maji,K. G. Suresh,A. K. Nigam###
(1421911, 1421912)
 It is found that the polycrystalline NdRu2Ge2 undergoes two successivemagnetic transitions at Tt10 K and T<missing VAR>N19 K.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 10, 'kOe', 2],[95.0, 30, 'kOe', 2],[118.0, 9, 'K', 3],[121.0, 30, 'kOe', 3],[165.0, 42, '%', 4],[176.0, 30, 'kOe', 4],[197.0, 3, 'K', 4]

K
###Anomalous magnetoresistance and magnetocaloric properties of NdRu2Ge2|Bibekananda Maji,K. G. Suresh,A. K. Nigam###
(1421914, 1421914)
 It is found that the polycrystalline NdRu2Ge2 undergoes two successivemagnetic transitions at Tt10 K and T<missing VAR>N19 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 10, 'kOe', 2],[93.0, 30, 'kOe', 2],[116.0, 9, 'K', 3],[119.0, 30, 'kOe', 3],[163.0, 42, '%', 4],[174.0, 30, 'kOe', 4],[195.0, 3, 'K', 4]

N
###Anomalous magnetoresistance and magnetocaloric properties of NdRu2Ge2|Bibekananda Maji,K. G. Suresh,A. K. Nigam###
(1421982, 1421982)
 Temperature dependence of magnetoresistance (MR) showthat the relative magnitudes of MR at T<missing VAR>N and Tt change considerably as thefield is increased from 10 kOe to 30 kOe.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 10, 'kOe', 0],[25.0, 30, 'kOe', 0],[48.0, 9, 'K', 1],[51.0, 30, 'kOe', 1],[95.0, 42, '%', 2],[106.0, 30, 'kOe', 2],[127.0, 3, 'K', 2]

N
###Anomalous magnetoresistance and magnetocaloric properties of NdRu2Ge2|Bibekananda Maji,K. G. Suresh,A. K. Nigam###
(1422071, 1422071)
 The highest value of negative MR near T<missing VAR>N is about 42% in afield of 30 kOe, while the positive MR is about 35 % at 3 K in a field of 50k<missing VAR>Oe.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 10, 'kOe', 2],[64.0, 30, 'kOe', 2],[41.0, 9, 'K', 1],[38.0, 30, 'kOe', 1],[6.0, 42, '%', 0],[17.0, 30, 'kOe', 0],[38.0, 3, 'K', 0]

N
###Anomalous magnetoresistance and magnetocaloric properties of NdRu2Ge2|Bibekananda Maji,K. G. Suresh,A. K. Nigam###
(1422141, 1422141)
 Like MR, the magnetocaloric effect at T<missing VAR>N and Tt also shows anomalousbehavior.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 10, 'kOe', 3],[134.0, 30, 'kOe', 3],[111.0, 9, 'K', 2],[108.0, 30, 'kOe', 2],[64.0, 42, '%', 1],[53.0, 30, 'kOe', 1],[32.0, 3, 'K', 1]

N
###Anomalous magnetoresistance and magnetocaloric properties of NdRu2Ge2|Bibekananda Maji,K. G. Suresh,A. K. Nigam###
(1422221, 1422221)
 It appears that the high field (>10 k<missing VAR>Oe)magnetic state below T<missing VAR>N is complex, giving rise to some antiferromagnetic-likefluctuations, affecting the MR and MCE behavior.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[217.0, 10, 'kOe', 5],[214.0, 30, 'kOe', 5],[191.0, 9, 'K', 4],[188.0, 30, 'kOe', 4],[144.0, 42, '%', 3],[133.0, 30, 'kOe', 3],[112.0, 3, 'K', 3]

C
###Fermionic and bosonic ac conductivities at strong disorder|S. V. Syzranov,O. M. Yevtushenko,K. B. Efetov###
(1422615, 1422615)
 For bosonssigma1(omega)propto log(C/omega).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Fermionic and bosonic ac conductivities at strong disorder|S. V. Syzranov,O. M. Yevtushenko,K. B. Efetov###
(1422648, 1422648)
 For fermionssigma1(omega)proptolog[max(A,omega)/omega]-log[max(B,omega)/omega],where the first and the second term are respectively the particle and holecontributions, A and B being the particle and hole energy cutoffs.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Fermionic and bosonic ac conductivities at strong disorder|S. V. Syzranov,O. M. Yevtushenko,K. B. Efetov###
(1422692, 1422692)
 For fermionssigma1(omega)proptolog[max(A,omega)/omega]-log[max(B,omega)/omega],where the first and the second term are respectively the particle and holecontributions, A and B being the particle and hole energy cutoffs.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Valley-dependent 2D transport in Si-MOSFETs|E. H. Hwang,S. Das Sarma###
(1422750, 1422750)
Valley-dependent 2D transport in Si-M<missing VAR>OSFE<missing VAR>Ts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 2, 'D', 0],[37.0, 2, 'D', 1],[117.0, 2, 'D', 2],[171.0, 2, 'D', 3],[207.0, 2, 'D', 4],[279.0, 2, 'D', 5],[323.0, 2, 'D', 6]

OSF
###Valley-dependent 2D transport in Si-MOSFETs|E. H. Hwang,S. Das Sarma###
(1422753, 1422755)
Valley-dependent 2D transport in Si-M<missing VAR>OSFE<missing VAR>Ts.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 2, 'D', 0],[32.0, 2, 'D', 1],[112.0, 2, 'D', 2],[166.0, 2, 'D', 3],[202.0, 2, 'D', 4],[274.0, 2, 'D', 5],[318.0, 2, 'D', 6]

Si
###Valley-dependent 2D transport in Si-MOSFETs|E. H. Hwang,S. Das Sarma###
(1422812, 1422812)
 Motivated by interesting recent experimental results, we considertheoretically charged-impurity scattering-limited 2D electronic transport in(100), (110), and (111)-Si inversion layers at low temperatures and carrierdensities, where screening effects are important.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 2, 'D', 1],[25.0, 2, 'D', 0],[55.0, 2, 'D', 1],[109.0, 2, 'D', 2],[145.0, 2, 'D', 3],[217.0, 2, 'D', 4],[261.0, 2, 'D', 5]

In
###Organic magnetoresistance near saturation: mesoscopic effects in small devices|R. C. Roundy,Z. V. Vardeny,M. E. Raikh###
(1423163, 1423163)
 In organic light emitting diodes with small area the current may be dominatedby a finite number, N of sites in which the electron-hole recombination occurs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Organic magnetoresistance near saturation: mesoscopic effects in small devices|R. C. Roundy,Z. V. Vardeny,M. E. Raikh###
(1423199, 1423199)
 In organic light emitting diodes with small area the current may be dominatedby a finite number, N of sites in which the electron-hole recombination occurs.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Organic magnetoresistance near saturation: mesoscopic effects in small devices|R. C. Roundy,Z. V. Vardeny,M. E. Raikh###
(1423221, 1423221)
As a result, averaging over the hyperfine magnetic fields, bh, that aregenerated in these sites by the environment nuclei is incomplete.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I(B)
###Organic magnetoresistance near saturation: mesoscopic effects in small devices|R. C. Roundy,Z. V. Vardeny,M. E. Raikh###
(1423290, 1423293)
 This createsa random (mesoscopic) current component, DeltaI(B), at field B havingrelative magnitude  N(-1/2).
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Organic magnetoresistance near saturation: mesoscopic effects in small devices|R. C. Roundy,Z. V. Vardeny,M. E. Raikh###
(1423300, 1423300)
 This createsa random (mesoscopic) current component, DeltaI(B), at field B havingrelative magnitude  N(-1/2).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Organic magnetoresistance near saturation: mesoscopic effects in small devices|R. C. Roundy,Z. V. Vardeny,M. E. Raikh###
(1423310, 1423310)
 This createsa random (mesoscopic) current component, DeltaI(B), at field B havingrelative magnitude  N(-1/2).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I(B)
###Organic magnetoresistance near saturation: mesoscopic effects in small devices|R. C. Roundy,Z. V. Vardeny,M. E. Raikh###
(1423333, 1423336)
 To quantify the statistical properties ofDeltaI(B) we calculate the correlator K(B, DeltaB) <deltaI(B -DeltaB/2)deltaI(B  DeltaB/2)> for parallel and perpendicularorientations of DeltaB.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Organic magnetoresistance near saturation: mesoscopic effects in small devices|R. C. Roundy,Z. V. Vardeny,M. E. Raikh###
(1423346, 1423346)
 To quantify the statistical properties ofDeltaI(B) we calculate the correlator K(B, DeltaB) <deltaI(B -DeltaB/2)deltaI(B  DeltaB/2)> for parallel and perpendicularorientations of DeltaB.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Organic magnetoresistance near saturation: mesoscopic effects in small devices|R. C. Roundy,Z. V. Vardeny,M. E. Raikh###
(1423348, 1423348)
 To quantify the statistical properties ofDeltaI(B) we calculate the correlator K(B, DeltaB) <deltaI(B -DeltaB/2)deltaI(B  DeltaB/2)> for parallel and perpendicularorientations of DeltaB.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Organic magnetoresistance near saturation: mesoscopic effects in small devices|R. C. Roundy,Z. V. Vardeny,M. E. Raikh###
(1423352, 1423352)
 To quantify the statistical properties ofDeltaI(B) we calculate the correlator K(B, DeltaB) <deltaI(B -DeltaB/2)deltaI(B  DeltaB/2)> for parallel and perpendicularorientations of DeltaB.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Organic magnetoresistance near saturation: mesoscopic effects in small devices|R. C. Roundy,Z. V. Vardeny,M. E. Raikh###
(1423357, 1423357)
 To quantify the statistical properties ofDeltaI(B) we calculate the correlator K(B, DeltaB) <deltaI(B -DeltaB/2)deltaI(B  DeltaB/2)> for parallel and perpendicularorientations of DeltaB.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Organic magnetoresistance near saturation: mesoscopic effects in small devices|R. C. Roundy,Z. V. Vardeny,M. E. Raikh###
(1423359, 1423359)
 To quantify the statistical properties ofDeltaI(B) we calculate the correlator K(B, DeltaB) <deltaI(B -DeltaB/2)deltaI(B  DeltaB/2)> for parallel and perpendicularorientations of DeltaB.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Organic magnetoresistance near saturation: mesoscopic effects in small devices|R. C. Roundy,Z. V. Vardeny,M. E. Raikh###
(1423365, 1423365)
 To quantify the statistical properties ofDeltaI(B) we calculate the correlator K(B, DeltaB) <deltaI(B -DeltaB/2)deltaI(B  DeltaB/2)> for parallel and perpendicularorientations of DeltaB.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Organic magnetoresistance near saturation: mesoscopic effects in small devices|R. C. Roundy,Z. V. Vardeny,M. E. Raikh###
(1423370, 1423370)
 To quantify the statistical properties ofDeltaI(B) we calculate the correlator K(B, DeltaB) <deltaI(B -DeltaB/2)deltaI(B  DeltaB/2)> for parallel and perpendicularorientations of DeltaB.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Organic magnetoresistance near saturation: mesoscopic effects in small devices|R. C. Roundy,Z. V. Vardeny,M. E. Raikh###
(1423372, 1423372)
 To quantify the statistical properties ofDeltaI(B) we calculate the correlator K(B, DeltaB) <deltaI(B -DeltaB/2)deltaI(B  DeltaB/2)> for parallel and perpendicularorientations of DeltaB.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Organic magnetoresistance near saturation: mesoscopic effects in small devices|R. C. Roundy,Z. V. Vardeny,M. E. Raikh###
(1423376, 1423376)
 To quantify the statistical properties ofDeltaI(B) we calculate the correlator K(B, DeltaB) <deltaI(B -DeltaB/2)deltaI(B  DeltaB/2)> for parallel and perpendicularorientations of DeltaB.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Organic magnetoresistance near saturation: mesoscopic effects in small devices|R. C. Roundy,Z. V. Vardeny,M. E. Raikh###
(1423396, 1423396)
 To quantify the statistical properties ofDeltaI(B) we calculate the correlator K(B, DeltaB) <deltaI(B -DeltaB/2)deltaI(B  DeltaB/2)> for parallel and perpendicularorientations of DeltaB.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Organic magnetoresistance near saturation: mesoscopic effects in small devices|R. C. Roundy,Z. V. Vardeny,M. E. Raikh###
(1423416, 1423416)
 We demonstrate that mesoscopic fluctuations developat fields B>>bh, where the average magnetoresistance is near saturation.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Organic magnetoresistance near saturation: mesoscopic effects in small devices|R. C. Roundy,Z. V. Vardeny,M. E. Raikh###
(1423455, 1423455)
 Thesefluctuations originate from the slow beating between S and T<missing VAR>0 states of therecombining e-h spin pair-partners.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Strong magnetoresistance of disordered graphene|P. S. Alekseev,A. P. Dmitriev,I. V. Gornyi,V. Yu. Kachorovskii###
(1423674, 1423674)
 For short-range disorder, the key parameter determiningmagnetotransport properties---a product of the cyclotron frequency andscattering time---depends in graphene not only on magnetic field H but alsoon the electron energy varepsilon.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Strong magnetoresistance of disordered graphene|P. S. Alekseev,A. P. Dmitriev,I. V. Gornyi,V. Yu. Kachorovskii###
(1423692, 1423692)
 As a result, a strong, square-root inH, MR arises already within the Drude-Boltzmann approach.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Strong magnetoresistance of disordered graphene|P. S. Alekseev,A. P. Dmitriev,I. V. Gornyi,V. Yu. Kachorovskii###
(1423711, 1423711)
 As a result, a strong, square-root inH, MR arises already within the Drude-Boltzmann approach.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Strong magnetoresistance of disordered graphene|P. S. Alekseev,A. P. Dmitriev,I. V. Gornyi,V. Yu. Kachorovskii###
(1423807, 1423807)
 Furthermore, for the same reason,quantum (separated Landau levels) and classical (overlapping Landau levels)regimes may coexist in the same sample at fixed H.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Strong magnetoresistance of disordered graphene|P. S. Alekseev,A. P. Dmitriev,I. V. Gornyi,V. Yu. Kachorovskii###
(1423901, 1423901)
 We predict a square-root MR both at very lowand at very high H [varrhoxx(H)-varrhoxx(0)]/varrhoxx(0)approxC sqrtH, where C is a temperature-dependent factor, different in the low-and strong-field limits and containing both quantum and classicalcontributions.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(H)
###Strong magnetoresistance of disordered graphene|P. S. Alekseev,A. P. Dmitriev,I. V. Gornyi,V. Yu. Kachorovskii###
(1423906, 1423908)
 We predict a square-root MR both at very lowand at very high H [varrhoxx(H)-varrhoxx(0)]/varrhoxx(0)approxC sqrtH, where C is a temperature-dependent factor, different in the low-and strong-field limits and containing both quantum and classicalcontributions.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Strong magnetoresistance of disordered graphene|P. S. Alekseev,A. P. Dmitriev,I. V. Gornyi,V. Yu. Kachorovskii###
(1423925, 1423925)
 We predict a square-root MR both at very lowand at very high H [varrhoxx(H)-varrhoxx(0)]/varrhoxx(0)approxC sqrtH, where C is a temperature-dependent factor, different in the low-and strong-field limits and containing both quantum and classicalcontributions.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Strong magnetoresistance of disordered graphene|P. S. Alekseev,A. P. Dmitriev,I. V. Gornyi,V. Yu. Kachorovskii###
(1423928, 1423928)
 We predict a square-root MR both at very lowand at very high H [varrhoxx(H)-varrhoxx(0)]/varrhoxx(0)approxC sqrtH, where C is a temperature-dependent factor, different in the low-and strong-field limits and containing both quantum and classicalcontributions.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Strong magnetoresistance of disordered graphene|P. S. Alekseev,A. P. Dmitriev,I. V. Gornyi,V. Yu. Kachorovskii###
(1423933, 1423933)
 We predict a square-root MR both at very lowand at very high H [varrhoxx(H)-varrhoxx(0)]/varrhoxx(0)approxC sqrtH, where C is a temperature-dependent factor, different in the low-and strong-field limits and containing both quantum and classicalcontributions.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Strong magnetoresistance of disordered graphene|P. S. Alekseev,A. P. Dmitriev,I. V. Gornyi,V. Yu. Kachorovskii###
(1424020, 1424020)
 In the case ofscreened charged impurities, we predict a strong temperature-independent MRnear the Dirac point.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Strong magnetoresistance of disordered graphene|P. S. Alekseev,A. P. Dmitriev,I. V. Gornyi,V. Yu. Kachorovskii###
(1424094, 1424094)
 In particular, we find that thesquare-root MR is always established for graphene with charged impurities in ageneric gated setup at low temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuB6
###Electronic phase separation due to magnetic polaron formation in the semimetallic ferromagnet EuB$_6$ - A weakly-nonlinear-transport study|A. Amyan,P. Das,J. Müller,Z. Fisk###
(1424181, 1424183)
Electronic phase separation due to magnetic polaron formation in the semimetallic ferromagnet EuB6 - A weakly-nonlinear-transport study.
Featurization terminated normally.
0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 15.6, ',', 1],[112.0, 12.5, ',', 1],[381.0, 35, ',', 6],[433.0, 1, ',', 7]

V3
###Electronic phase separation due to magnetic polaron formation in the semimetallic ferromagnet EuB$_6$ - A weakly-nonlinear-transport study|A. Amyan,P. Das,J. Müller,Z. Fisk###
(1424230, 1424231)
 We report measurements of weakly nonlinear electronic transport, as measuredby third-harmonic voltage generation V3omega, in the low-carrier densitysemimetallic ferromagnet EuB6, which exhibits an unusual magnetic orderingwith two consecutive transitions at Tc1  15.6,K and Tc2 12.5,K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 15.6, ',', 0],[64.0, 12.5, ',', 0],[333.0, 35, ',', 5],[385.0, 1, ',', 6]

EuB6
###Electronic phase separation due to magnetic polaron formation in the semimetallic ferromagnet EuB$_6$ - A weakly-nonlinear-transport study|A. Amyan,P. Das,J. Müller,Z. Fisk###
(1424250, 1424252)
 We report measurements of weakly nonlinear electronic transport, as measuredby third-harmonic voltage generation V3omega, in the low-carrier densitysemimetallic ferromagnet EuB6, which exhibits an unusual magnetic orderingwith two consecutive transitions at Tc1  15.6,K and Tc2 12.5,K.
Featurization terminated normally.
0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 15.6, ',', 0],[43.0, 12.5, ',', 0],[312.0, 35, ',', 5],[364.0, 1, ',', 6]

K
###Electronic phase separation due to magnetic polaron formation in the semimetallic ferromagnet EuB$_6$ - A weakly-nonlinear-transport study|A. Amyan,P. Das,J. Müller,Z. Fisk###
(1424285, 1424285)
 We report measurements of weakly nonlinear electronic transport, as measuredby third-harmonic voltage generation V3omega, in the low-carrier densitysemimetallic ferromagnet EuB6, which exhibits an unusual magnetic orderingwith two consecutive transitions at Tc1  15.6,K and Tc2 12.5,K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 15.6, ',', 0],[10.0, 12.5, ',', 0],[279.0, 35, ',', 5],[331.0, 1, ',', 6]

K
###Electronic phase separation due to magnetic polaron formation in the semimetallic ferromagnet EuB$_6$ - A weakly-nonlinear-transport study|A. Amyan,P. Das,J. Müller,Z. Fisk###
(1424297, 1424297)
 We report measurements of weakly nonlinear electronic transport, as measuredby third-harmonic voltage generation V3omega, in the low-carrier densitysemimetallic ferromagnet EuB6, which exhibits an unusual magnetic orderingwith two consecutive transitions at Tc1  15.6,K and Tc2 12.5,K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 15.6, ',', 0],[2.0, 12.5, ',', 0],[267.0, 35, ',', 5],[319.0, 1, ',', 6]

V3
###Electronic phase separation due to magnetic polaron formation in the semimetallic ferromagnet EuB$_6$ - A weakly-nonlinear-transport study|A. Amyan,P. Das,J. Müller,Z. Fisk###
(1424385, 1424386)
 Upon cooling in zero magnetic field through the ferromagnetictransition, the dramatic drop in the linear resistivity at the upper transitionTc1 coincides with the onset of nonlinearity, and upon further cooling isfollowed by a pronounced peak in V3 omega at the lower transitionTc2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 15.6, ',', 1],[90.0, 12.5, ',', 1],[178.0, 35, ',', 4],[230.0, 1, ',', 5]

(H)
###Electronic phase separation due to magnetic polaron formation in the semimetallic ferromagnet EuB$_6$ - A weakly-nonlinear-transport study|A. Amyan,P. Das,J. Müller,Z. Fisk###
(1424431, 1424433)
 Likewise, in the paramagnetic regime, a drop of the materials<missing VAR>magnetoresistance R<missing VAR>(H) precedes a magnetic-field-induced peak in nonlineartransport.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 15.6, ',', 2],[136.0, 12.5, ',', 2],[131.0, 35, ',', 3],[183.0, 1, ',', 4]

V3
###Electronic phase separation due to magnetic polaron formation in the semimetallic ferromagnet EuB$_6$ - A weakly-nonlinear-transport study|A. Amyan,P. Das,J. Müller,Z. Fisk###
(1424474, 1424475)
 A striking observation is a linear temperature dependence ofV3omegarm peak(H).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[191.0, 15.6, ',', 3],[179.0, 12.5, ',', 3],[89.0, 35, ',', 2],[141.0, 1, ',', 3]

(H)
###Electronic phase separation due to magnetic polaron formation in the semimetallic ferromagnet EuB$_6$ - A weakly-nonlinear-transport study|A. Amyan,P. Das,J. Müller,Z. Fisk###
(1424480, 1424482)
 A striking observation is a linear temperature dependence ofV3omegarm peak(H).
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[197.0, 15.6, ',', 3],[185.0, 12.5, ',', 3],[82.0, 35, ',', 2],[134.0, 1, ',', 3]

P
###Electronic phase separation due to magnetic polaron formation in the semimetallic ferromagnet EuB$_6$ - A weakly-nonlinear-transport study|A. Amyan,P. Das,J. Müller,Z. Fisk###
(1424513, 1424513)
 We suggest a picture where at the upper transitionTc1 the coalescing M<missing VAR>P form a conducting path giving rise to a strongdecrease in the resistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[230.0, 15.6, ',', 4],[218.0, 12.5, ',', 4],[51.0, 35, ',', 1],[103.0, 1, ',', 2]

P
###Electronic phase separation due to magnetic polaron formation in the semimetallic ferromagnet EuB$_6$ - A weakly-nonlinear-transport study|A. Amyan,P. Das,J. Müller,Z. Fisk###
(1424546, 1424546)
 The M<missing VAR>P formation sets in at around T<missing VAR>ast sim35,K below which these entities are isolated and strongly fluctuating, whilegrowing in number.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[263.0, 15.6, ',', 5],[251.0, 12.5, ',', 5],[18.0, 35, ',', 0],[70.0, 1, ',', 1]

K
###Electronic phase separation due to magnetic polaron formation in the semimetallic ferromagnet EuB$_6$ - A weakly-nonlinear-transport study|A. Amyan,P. Das,J. Müller,Z. Fisk###
(1424566, 1424566)
 The M<missing VAR>P formation sets in at around T<missing VAR>ast sim35,K below which these entities are isolated and strongly fluctuating, whilegrowing in number.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[283.0, 15.6, ',', 5],[271.0, 12.5, ',', 5],[2.0, 35, ',', 0],[50.0, 1, ',', 1]

P
###Electronic phase separation due to magnetic polaron formation in the semimetallic ferromagnet EuB$_6$ - A weakly-nonlinear-transport study|A. Amyan,P. Das,J. Müller,Z. Fisk###
(1424600, 1424600)
 The M<missing VAR>P then start to form links at Tc1, wherepercolative electronic transport is observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[317.0, 15.6, ',', 6],[305.0, 12.5, ',', 6],[36.0, 35, ',', 1],[16.0, 1, ',', 0]

P
###Electronic phase separation due to magnetic polaron formation in the semimetallic ferromagnet EuB$_6$ - A weakly-nonlinear-transport study|A. Amyan,P. Das,J. Müller,Z. Fisk###
(1424636, 1424636)
 The M<missing VAR>P merge and start forming acontinuum at the threshold Tc2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[353.0, 15.6, ',', 7],[341.0, 12.5, ',', 7],[72.0, 35, ',', 2],[20.0, 1, ',', 1]

In
###Electronic phase separation due to magnetic polaron formation in the semimetallic ferromagnet EuB$_6$ - A weakly-nonlinear-transport study|A. Amyan,P. Das,J. Müller,Z. Fisk###
(1424662, 1424662)
 In the paramagnetic temperature regimeTc1 < T<missing VAR> < T<missing VAR>ast, M<missing VAR>P percolation is induced by a magnetic field, and thethreshold accompanied by charge carrier delocalization occurs at a singlecritical magnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[379.0, 15.6, ',', 8],[367.0, 12.5, ',', 8],[98.0, 35, ',', 3],[46.0, 1, ',', 2]

P
###Electronic phase separation due to magnetic polaron formation in the semimetallic ferromagnet EuB$_6$ - A weakly-nonlinear-transport study|A. Amyan,P. Das,J. Müller,Z. Fisk###
(1424688, 1424688)
 In the paramagnetic temperature regimeTc1 < T<missing VAR> < T<missing VAR>ast, M<missing VAR>P percolation is induced by a magnetic field, and thethreshold accompanied by charge carrier delocalization occurs at a singlecritical magnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[405.0, 15.6, ',', 8],[393.0, 12.5, ',', 8],[124.0, 35, ',', 3],[72.0, 1, ',', 2]

EuO
###Integration of the Ferromagnetic Insulator EuO onto Graphene|Adrian G. Swartz,Patrick M. Odenthal,Yufeng Hao,Rodney S. Ruoff,Roland K. Kawakami###
(1424754, 1424755)
Integration of the Ferromagnetic Insulator EuO onto Graphene.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[418.0, 69, 'K', 8]

EuO
###Integration of the Ferromagnetic Insulator EuO onto Graphene|Adrian G. Swartz,Patrick M. Odenthal,Yufeng Hao,Rodney S. Ruoff,Roland K. Kawakami###
(1424774, 1424775)
 We have demonstrated the deposition of EuO films on graphene by reactivemolecular beam epitaxy in a special adsorption-controlled and oxygen-limitedregime, which is a critical advance toward the realization of the exchangeproximity interaction (E<missing VAR>PI).
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[398.0, 69, 'K', 7]

I
###Integration of the Ferromagnetic Insulator EuO onto Graphene|Adrian G. Swartz,Patrick M. Odenthal,Yufeng Hao,Rodney S. Ruoff,Roland K. Kawakami###
(1424844, 1424844)
 We have demonstrated the deposition of EuO films on graphene by reactivemolecular beam epitaxy in a special adsorption-controlled and oxygen-limitedregime, which is a critical advance toward the realization of the exchangeproximity interaction (E<missing VAR>PI).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[329.0, 69, 'K', 7]

F
###Integration of the Ferromagnetic Insulator EuO onto Graphene|Adrian G. Swartz,Patrick M. Odenthal,Yufeng Hao,Rodney S. Ruoff,Roland K. Kawakami###
(1424868, 1424868)
 It has been predicted that when the ferromagneticinsulator (FM<missing VAR>I) EuO is brought into contact with graphene, an overlap ofelectronic wavefunctions at the FM<missing VAR>I/graphene interface can induce a large spinsplitting inside the graphene.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[305.0, 69, 'K', 6]

I
###Integration of the Ferromagnetic Insulator EuO onto Graphene|Adrian G. Swartz,Patrick M. Odenthal,Yufeng Hao,Rodney S. Ruoff,Roland K. Kawakami###
(1424870, 1424870)
 It has been predicted that when the ferromagneticinsulator (FM<missing VAR>I) EuO is brought into contact with graphene, an overlap ofelectronic wavefunctions at the FM<missing VAR>I/graphene interface can induce a large spinsplitting inside the graphene.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[303.0, 69, 'K', 6]

EuO
###Integration of the Ferromagnetic Insulator EuO onto Graphene|Adrian G. Swartz,Patrick M. Odenthal,Yufeng Hao,Rodney S. Ruoff,Roland K. Kawakami###
(1424873, 1424874)
 It has been predicted that when the ferromagneticinsulator (FM<missing VAR>I) EuO is brought into contact with graphene, an overlap ofelectronic wavefunctions at the FM<missing VAR>I/graphene interface can induce a large spinsplitting inside the graphene.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[299.0, 69, 'K', 6]

F
###Integration of the Ferromagnetic Insulator EuO onto Graphene|Adrian G. Swartz,Patrick M. Odenthal,Yufeng Hao,Rodney S. Ruoff,Roland K. Kawakami###
(1424904, 1424904)
 It has been predicted that when the ferromagneticinsulator (FM<missing VAR>I) EuO is brought into contact with graphene, an overlap ofelectronic wavefunctions at the FM<missing VAR>I/graphene interface can induce a large spinsplitting inside the graphene.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[269.0, 69, 'K', 6]

I
###Integration of the Ferromagnetic Insulator EuO onto Graphene|Adrian G. Swartz,Patrick M. Odenthal,Yufeng Hao,Rodney S. Ruoff,Roland K. Kawakami###
(1424906, 1424906)
 It has been predicted that when the ferromagneticinsulator (FM<missing VAR>I) EuO is brought into contact with graphene, an overlap ofelectronic wavefunctions at the FM<missing VAR>I/graphene interface can induce a large spinsplitting inside the graphene.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[267.0, 69, 'K', 6]

PI
###Integration of the Ferromagnetic Insulator EuO onto Graphene|Adrian G. Swartz,Patrick M. Odenthal,Yufeng Hao,Rodney S. Ruoff,Roland K. Kawakami###
(1424986, 1424987)
 Furthermore, E<missing VAR>PI could lead to novel spintronicbehavior such as controllable magnetoresistance, gate tunable exchange bias,and quantized anomalous Hall effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, 69, 'K', 4]

EuO
###Integration of the Ferromagnetic Insulator EuO onto Graphene|Adrian G. Swartz,Patrick M. Odenthal,Yufeng Hao,Rodney S. Ruoff,Roland K. Kawakami###
(1425038, 1425039)
 However, experimentally, EuO has not yetbeen integrated onto graphene.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 69, 'K', 3]

EuO
###Integration of the Ferromagnetic Insulator EuO onto Graphene|Adrian G. Swartz,Patrick M. Odenthal,Yufeng Hao,Rodney S. Ruoff,Roland K. Kawakami###
(1425078, 1425079)
 Here we report the successful growth of highquality crystalline EuO on highly-oriented pyrolytic graphite (HOPG) andsingle-layer graphene.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 69, 'K', 2]

HOP
###Integration of the Ferromagnetic Insulator EuO onto Graphene|Adrian G. Swartz,Patrick M. Odenthal,Yufeng Hao,Rodney S. Ruoff,Roland K. Kawakami###
(1425092, 1425094)
 Here we report the successful growth of highquality crystalline EuO on highly-oriented pyrolytic graphite (HOPG) andsingle-layer graphene.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 69, 'K', 2]

EuO
###Integration of the Ferromagnetic Insulator EuO onto Graphene|Adrian G. Swartz,Patrick M. Odenthal,Yufeng Hao,Rodney S. Ruoff,Roland K. Kawakami###
(1425112, 1425113)
 The epitaxial EuO layers have (001) orientation and donot induce an observable D<missing VAR> peak (defect) in the Raman spectra.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 69, 'K', 1]

EuO
###Integration of the Ferromagnetic Insulator EuO onto Graphene|Adrian G. Swartz,Patrick M. Odenthal,Yufeng Hao,Rodney S. Ruoff,Roland K. Kawakami###
(1425189, 1425190)
 Magneto-opticmeasurements indicate ferromagnetism with Curie temperature of 69 K, which isthe value for bulk EuO.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 69, 'K', 0]

EuO
###Integration of the Ferromagnetic Insulator EuO onto Graphene|Adrian G. Swartz,Patrick M. Odenthal,Yufeng Hao,Rodney S. Ruoff,Roland K. Kawakami###
(1425210, 1425211)
 Transport measurements on exfoliated graphene beforeand after EuO deposition indicate only a slight decrease in mobility.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 69, 'K', 1]

ISH
###Spin Pumping and Inverse Spin Hall Effect in Germanium|J. -C. Rojas-Sánchez,M. Cubukcu,A. Jain,C. Vergnaud,C. Portemont,C. Ducruet,A. Barski,A. Marty,L. Vila,J. -P. Attané,E. Augendre,G. Desfonds,S. Gambarelli,H. Jaffrès,J. -M. George,M. Jamet###
(1425274, 1425276)
 We have measured the inverse spin Hall effect (ISHE) in textitn<missing VAR>-Ge at roomtemperature.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ge
###Spin Pumping and Inverse Spin Hall Effect in Germanium|J. -C. Rojas-Sánchez,M. Cubukcu,A. Jain,C. Vergnaud,C. Portemont,C. Ducruet,A. Barski,A. Marty,L. Vila,J. -P. Attané,E. Augendre,G. Desfonds,S. Gambarelli,H. Jaffrès,J. -M. George,M. Jamet###
(1425285, 1425285)
 We have measured the inverse spin Hall effect (ISHE) in textitn<missing VAR>-Ge at roomtemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFeB/MgO
###Spin Pumping and Inverse Spin Hall Effect in Germanium|J. -C. Rojas-Sánchez,M. Cubukcu,A. Jain,C. Vergnaud,C. Portemont,C. Ducruet,A. Barski,A. Marty,L. Vila,J. -P. Attané,E. Augendre,G. Desfonds,S. Gambarelli,H. Jaffrès,J. -M. George,M. Jamet###
(1425320, 1425325)
 The spin current in germanium was generated by spin pumping from aCoFeB/MgO magnetic tunnel junction in order to prevent the impedance mismatchissue.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Ge
###Spin Pumping and Inverse Spin Hall Effect in Germanium|J. -C. Rojas-Sánchez,M. Cubukcu,A. Jain,C. Vergnaud,C. Portemont,C. Ducruet,A. Barski,A. Marty,L. Vila,J. -P. Attané,E. Augendre,G. Desfonds,S. Gambarelli,H. Jaffrès,J. -M. George,M. Jamet###
(1425365, 1425365)
 A clear electromotive force was measured in Ge at the ferromagneticresonance of CoFeB.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFeB
###Spin Pumping and Inverse Spin Hall Effect in Germanium|J. -C. Rojas-Sánchez,M. Cubukcu,A. Jain,C. Vergnaud,C. Portemont,C. Ducruet,A. Barski,A. Marty,L. Vila,J. -P. Attané,E. Augendre,G. Desfonds,S. Gambarelli,H. Jaffrès,J. -M. George,M. Jamet###
(1425378, 1425380)
 A clear electromotive force was measured in Ge at the ferromagneticresonance of CoFeB.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Spin Pumping and Inverse Spin Hall Effect in Germanium|J. -C. Rojas-Sánchez,M. Cubukcu,A. Jain,C. Vergnaud,C. Portemont,C. Ducruet,A. Barski,A. Marty,L. Vila,J. -P. Attané,E. Augendre,G. Desfonds,S. Gambarelli,H. Jaffrès,J. -M. George,M. Jamet###
(1425425, 1425426)
 The same study was then carried out on several testsamples, in particular we have investigated the influence of the MgO tunnelbarrier and sample annealing on the ISHE<missing VAR> signal.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ISH
###Spin Pumping and Inverse Spin Hall Effect in Germanium|J. -C. Rojas-Sánchez,M. Cubukcu,A. Jain,C. Vergnaud,C. Portemont,C. Ducruet,A. Barski,A. Marty,L. Vila,J. -P. Attané,E. Augendre,G. Desfonds,S. Gambarelli,H. Jaffrès,J. -M. George,M. Jamet###
(1425443, 1425445)
 The same study was then carried out on several testsamples, in particular we have investigated the influence of the MgO tunnelbarrier and sample annealing on the ISHE<missing VAR> signal.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFeB/MgO
###Spin Pumping and Inverse Spin Hall Effect in Germanium|J. -C. Rojas-Sánchez,M. Cubukcu,A. Jain,C. Vergnaud,C. Portemont,C. Ducruet,A. Barski,A. Marty,L. Vila,J. -P. Attané,E. Augendre,G. Desfonds,S. Gambarelli,H. Jaffrès,J. -M. George,M. Jamet###
(1425458, 1425463)
 First, the reference CoFeB/MgObilayer grown on SiO2 exhibits a clear electromotive force due toanisotropic magnetoresistance and anomalous Hall effect which is dominated byan asymmetric contribution with respect to the resonance field.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

SiO2
###Spin Pumping and Inverse Spin Hall Effect in Germanium|J. -C. Rojas-Sánchez,M. Cubukcu,A. Jain,C. Vergnaud,C. Portemont,C. Ducruet,A. Barski,A. Marty,L. Vila,J. -P. Attané,E. Augendre,G. Desfonds,S. Gambarelli,H. Jaffrès,J. -M. George,M. Jamet###
(1425472, 1425474)
 First, the reference CoFeB/MgObilayer grown on SiO2 exhibits a clear electromotive force due toanisotropic magnetoresistance and anomalous Hall effect which is dominated byan asymmetric contribution with respect to the resonance field.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Spin Pumping and Inverse Spin Hall Effect in Germanium|J. -C. Rojas-Sánchez,M. Cubukcu,A. Jain,C. Vergnaud,C. Portemont,C. Ducruet,A. Barski,A. Marty,L. Vila,J. -P. Attané,E. Augendre,G. Desfonds,S. Gambarelli,H. Jaffrès,J. -M. George,M. Jamet###
(1425542, 1425543)
 We also foundthat the MgO tunnel barrier is essential to observe ISHE<missing VAR> in Ge and that sampleannealing systematically lead to an increase of the signal.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ISH
###Spin Pumping and Inverse Spin Hall Effect in Germanium|J. -C. Rojas-Sánchez,M. Cubukcu,A. Jain,C. Vergnaud,C. Portemont,C. Ducruet,A. Barski,A. Marty,L. Vila,J. -P. Attané,E. Augendre,G. Desfonds,S. Gambarelli,H. Jaffrès,J. -M. George,M. Jamet###
(1425557, 1425559)
 We also foundthat the MgO tunnel barrier is essential to observe ISHE<missing VAR> in Ge and that sampleannealing systematically lead to an increase of the signal.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ge
###Spin Pumping and Inverse Spin Hall Effect in Germanium|J. -C. Rojas-Sánchez,M. Cubukcu,A. Jain,C. Vergnaud,C. Portemont,C. Ducruet,A. Barski,A. Marty,L. Vila,J. -P. Attané,E. Augendre,G. Desfonds,S. Gambarelli,H. Jaffrès,J. -M. George,M. Jamet###
(1425564, 1425564)
 We also foundthat the MgO tunnel barrier is essential to observe ISHE<missing VAR> in Ge and that sampleannealing systematically lead to an increase of the signal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Spin Pumping and Inverse Spin Hall Effect in Germanium|J. -C. Rojas-Sánchez,M. Cubukcu,A. Jain,C. Vergnaud,C. Portemont,C. Ducruet,A. Barski,A. Marty,L. Vila,J. -P. Attané,E. Augendre,G. Desfonds,S. Gambarelli,H. Jaffrès,J. -M. George,M. Jamet###
(1425628, 1425629)
 We propose atheoretical model based on the presence of localized states at the interfacebetween the MgO tunnel barrier and Ge to account for these observations.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ge
###Spin Pumping and Inverse Spin Hall Effect in Germanium|J. -C. Rojas-Sánchez,M. Cubukcu,A. Jain,C. Vergnaud,C. Portemont,C. Ducruet,A. Barski,A. Marty,L. Vila,J. -P. Attané,E. Augendre,G. Desfonds,S. Gambarelli,H. Jaffrès,J. -M. George,M. Jamet###
(1425637, 1425637)
 We propose atheoretical model based on the presence of localized states at the interfacebetween the MgO tunnel barrier and Ge to account for these observations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ISH
###Spin Pumping and Inverse Spin Hall Effect in Germanium|J. -C. Rojas-Sánchez,M. Cubukcu,A. Jain,C. Vergnaud,C. Portemont,C. Ducruet,A. Barski,A. Marty,L. Vila,J. -P. Attané,E. Augendre,G. Desfonds,S. Gambarelli,H. Jaffrès,J. -M. George,M. Jamet###
(1425676, 1425678)
Finally, all of our results are fully consistent with the observation of ISHE<missing VAR>in heavily doped n<missing VAR>-Ge and we could estimate the spin Hall angle at roomtemperature to be approx0.001.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ge
###Spin Pumping and Inverse Spin Hall Effect in Germanium|J. -C. Rojas-Sánchez,M. Cubukcu,A. Jain,C. Vergnaud,C. Portemont,C. Ducruet,A. Barski,A. Marty,L. Vila,J. -P. Attané,E. Augendre,G. Desfonds,S. Gambarelli,H. Jaffrès,J. -M. George,M. Jamet###
(1425690, 1425690)
Finally, all of our results are fully consistent with the observation of ISHE<missing VAR>in heavily doped n<missing VAR>-Ge and we could estimate the spin Hall angle at roomtemperature to be approx0.001.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(CPP)
###Current Perpendicular-to-Plane (CPP) Magnetoresistance (MR)|Jack Bass###
(1425739, 1425743)
Current Perpendicular-to-Plane (CPP) Magnetoresistance (MR).
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Current Perpendicular-to-Plane (CPP) Magnetoresistance (MR)|Jack Bass###
(1425779, 1425779)
 Measurements of Giant Magnetoresistance (GMR) in ferromagnetic/non-magnetic(F/N) multilayers with Current flow Perpendicular to the layer Planes(CPP-geometry) can give better access to the fundamental physics underlying GMRthan measurements with the more usual Current flow In the layer Planes (CIPgeometry).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CPP
###Current Perpendicular-to-Plane (CPP) Magnetoresistance (MR)|Jack Bass###
(1425802, 1425804)
 Measurements of Giant Magnetoresistance (GMR) in ferromagnetic/non-magnetic(F/N) multilayers with Current flow Perpendicular to the layer Planes(CPP-geometry) can give better access to the fundamental physics underlying GMRthan measurements with the more usual Current flow In the layer Planes (CIPgeometry).
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Current Perpendicular-to-Plane (CPP) Magnetoresistance (MR)|Jack Bass###
(1425848, 1425848)
 Measurements of Giant Magnetoresistance (GMR) in ferromagnetic/non-magnetic(F/N) multilayers with Current flow Perpendicular to the layer Planes(CPP-geometry) can give better access to the fundamental physics underlying GMRthan measurements with the more usual Current flow In the layer Planes (CIPgeometry).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CIP
###Current Perpendicular-to-Plane (CPP) Magnetoresistance (MR)|Jack Bass###
(1425857, 1425859)
 Measurements of Giant Magnetoresistance (GMR) in ferromagnetic/non-magnetic(F/N) multilayers with Current flow Perpendicular to the layer Planes(CPP-geometry) can give better access to the fundamental physics underlying GMRthan measurements with the more usual Current flow In the layer Planes (CIPgeometry).
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CPP
###Current Perpendicular-to-Plane (CPP) Magnetoresistance (MR)|Jack Bass###
(1425892, 1425894)
 Because the same measuring current passes through all of the layers,the CPP-MR can often be described by simpler equations that allow separation ofeffects of scattering within the bulk of the F- and N-metals and at F/N, N1/N2,and F/S (S  superconductor) interfaces.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Current Perpendicular-to-Plane (CPP) Magnetoresistance (MR)|Jack Bass###
(1425938, 1425938)
 Because the same measuring current passes through all of the layers,the CPP-MR can often be described by simpler equations that allow separation ofeffects of scattering within the bulk of the F- and N-metals and at F/N, N1/N2,and F/S (S  superconductor) interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Current Perpendicular-to-Plane (CPP) Magnetoresistance (MR)|Jack Bass###
(1425943, 1425943)
 Because the same measuring current passes through all of the layers,the CPP-MR can often be described by simpler equations that allow separation ofeffects of scattering within the bulk of the F- and N-metals and at F/N, N1/N2,and F/S (S  superconductor) interfaces.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F/N
###Current Perpendicular-to-Plane (CPP) Magnetoresistance (MR)|Jack Bass###
(1425951, 1425953)
 Because the same measuring current passes through all of the layers,the CPP-MR can often be described by simpler equations that allow separation ofeffects of scattering within the bulk of the F- and N-metals and at F/N, N1/N2,and F/S (S  superconductor) interfaces.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

N1/N2
###Current Perpendicular-to-Plane (CPP) Magnetoresistance (MR)|Jack Bass###
(1425956, 1425960)
 Because the same measuring current passes through all of the layers,the CPP-MR can often be described by simpler equations that allow separation ofeffects of scattering within the bulk of the F- and N-metals and at F/N, N1/N2,and F/S (S  superconductor) interfaces.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

F/S
###Current Perpendicular-to-Plane (CPP) Magnetoresistance (MR)|Jack Bass###
(1425966, 1425968)
 Because the same measuring current passes through all of the layers,the CPP-MR can often be described by simpler equations that allow separation ofeffects of scattering within the bulk of the F- and N-metals and at F/N, N1/N2,and F/S (S  superconductor) interfaces.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

S
###Current Perpendicular-to-Plane (CPP) Magnetoresistance (MR)|Jack Bass###
(1425971, 1425971)
 Because the same measuring current passes through all of the layers,the CPP-MR can often be described by simpler equations that allow separation ofeffects of scattering within the bulk of the F- and N-metals and at F/N, N1/N2,and F/S (S  superconductor) interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CPP
###Current Perpendicular-to-Plane (CPP) Magnetoresistance (MR)|Jack Bass###
(1426003, 1426005)
 We first describe the parameters thatare used to characterize the CPP-MR, the different techniques used to measurethese parameters, and the different types of multilayers used to control thetwo orientations of the magnetizations of adjacent F-layers, anti-parallel (AP)and parallel (P), that permit isolation of the parameters.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Current Perpendicular-to-Plane (CPP) Magnetoresistance (MR)|Jack Bass###
(1426064, 1426064)
 We first describe the parameters thatare used to characterize the CPP-MR, the different techniques used to measurethese parameters, and the different types of multilayers used to control thetwo orientations of the magnetizations of adjacent F-layers, anti-parallel (AP)and parallel (P), that permit isolation of the parameters.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Current Perpendicular-to-Plane (CPP) Magnetoresistance (MR)|Jack Bass###
(1426075, 1426075)
 We first describe the parameters thatare used to characterize the CPP-MR, the different techniques used to measurethese parameters, and the different types of multilayers used to control thetwo orientations of the magnetizations of adjacent F-layers, anti-parallel (AP)and parallel (P), that permit isolation of the parameters.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(P)
###Current Perpendicular-to-Plane (CPP) Magnetoresistance (MR)|Jack Bass###
(1426083, 1426085)
 We first describe the parameters thatare used to characterize the CPP-MR, the different techniques used to measurethese parameters, and the different types of multilayers used to control thetwo orientations of the magnetizations of adjacent F-layers, anti-parallel (AP)and parallel (P), that permit isolation of the parameters.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Current Perpendicular-to-Plane (CPP) Magnetoresistance (MR)|Jack Bass###
(1426126, 1426126)
 We then detail whathas been learned about the parameters of bulk F-metals, of bulk N-metals, andof F/N, N1/N2, and F/S interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Current Perpendicular-to-Plane (CPP) Magnetoresistance (MR)|Jack Bass###
(1426135, 1426135)
 We then detail whathas been learned about the parameters of bulk F-metals, of bulk N-metals, andof F/N, N1/N2, and F/S interfaces.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F/N
###Current Perpendicular-to-Plane (CPP) Magnetoresistance (MR)|Jack Bass###
(1426145, 1426147)
 We then detail whathas been learned about the parameters of bulk F-metals, of bulk N-metals, andof F/N, N1/N2, and F/S interfaces.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

N1/N2
###Current Perpendicular-to-Plane (CPP) Magnetoresistance (MR)|Jack Bass###
(1426150, 1426154)
 We then detail whathas been learned about the parameters of bulk F-metals, of bulk N-metals, andof F/N, N1/N2, and F/S interfaces.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

F/S
###Current Perpendicular-to-Plane (CPP) Magnetoresistance (MR)|Jack Bass###
(1426159, 1426161)
 We then detail whathas been learned about the parameters of bulk F-metals, of bulk N-metals, andof F/N, N1/N2, and F/S interfaces.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

F
###Current Perpendicular-to-Plane (CPP) Magnetoresistance (MR)|Jack Bass###
(1426193, 1426193)
 Especially important are the parameters ofinterfaces and the spin-diffusion lengths in F-metals and F-alloys, about whichalmost nothing was known in advance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Current Perpendicular-to-Plane (CPP) Magnetoresistance (MR)|Jack Bass###
(1426199, 1426199)
 Especially important are the parameters ofinterfaces and the spin-diffusion lengths in F-metals and F-alloys, about whichalmost nothing was known in advance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CPP
###Current Perpendicular-to-Plane (CPP) Magnetoresistance (MR)|Jack Bass###
(1426233, 1426235)
 Lastly, we describe work toward CPP-MRdevices and studies of magnetothermoelectric effects, before summarizing whathas been learned and listing some items not yet understood.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Zn1-xMn
###Low-Dilution Limit of Zn_{1-x}Mn_{x}GeAs_{2}: electrical and magnetic properties|L. Kilanski,K. Szałowski,R. Szymczak,M. Górska,E. Dynowska,P. Aleshkevych,A. Podgórni,A. Avdonin,W. Dobrowolski,I. V. Fedorchenko,S. F. Marenkin###
(1426298, 1426302)
Low-Dilution Limit of Zn1-xMnx<missing VAR>GeAs2 electrical and magnetic properties.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[138.0, -50, '%', 3]

GeAs2
###Low-Dilution Limit of Zn_{1-x}Mn_{x}GeAs_{2}: electrical and magnetic properties|L. Kilanski,K. Szałowski,R. Szymczak,M. Górska,E. Dynowska,P. Aleshkevych,A. Podgórni,A. Avdonin,W. Dobrowolski,I. V. Fedorchenko,S. F. Marenkin###
(1426304, 1426306)
Low-Dilution Limit of Zn1-xMnx<missing VAR>GeAs2 electrical and magnetic properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, -50, '%', 3]

Zn1-xMn
###Low-Dilution Limit of Zn_{1-x}Mn_{x}GeAs_{2}: electrical and magnetic properties|L. Kilanski,K. Szałowski,R. Szymczak,M. Górska,E. Dynowska,P. Aleshkevych,A. Podgórni,A. Avdonin,W. Dobrowolski,I. V. Fedorchenko,S. F. Marenkin###
(1426340, 1426344)
 We present the studies of electrical transport and magnetic interactions inZn1-xMnx<missing VAR>GeAs2 crystals with low Mn content 0 leq x<missing VAR> leq 0.043.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[96.0, -50, '%', 2]

GeAs2
###Low-Dilution Limit of Zn_{1-x}Mn_{x}GeAs_{2}: electrical and magnetic properties|L. Kilanski,K. Szałowski,R. Szymczak,M. Górska,E. Dynowska,P. Aleshkevych,A. Podgórni,A. Avdonin,W. Dobrowolski,I. V. Fedorchenko,S. F. Marenkin###
(1426346, 1426348)
 We present the studies of electrical transport and magnetic interactions inZn1-xMnx<missing VAR>GeAs2 crystals with low Mn content 0 leq x<missing VAR> leq 0.043.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, -50, '%', 2]

Mn
###Low-Dilution Limit of Zn_{1-x}Mn_{x}GeAs_{2}: electrical and magnetic properties|L. Kilanski,K. Szałowski,R. Szymczak,M. Górska,E. Dynowska,P. Aleshkevych,A. Podgórni,A. Avdonin,W. Dobrowolski,I. V. Fedorchenko,S. F. Marenkin###
(1426356, 1426356)
 We present the studies of electrical transport and magnetic interactions inZn1-xMnx<missing VAR>GeAs2 crystals with low Mn content 0 leq x<missing VAR> leq 0.043.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, -50, '%', 2]

Zn1-x
###Low-Dilution Limit of Zn_{1-x}Mn_{x}GeAs_{2}: electrical and magnetic properties|L. Kilanski,K. Szałowski,R. Szymczak,M. Górska,E. Dynowska,P. Aleshkevych,A. Podgórni,A. Avdonin,W. Dobrowolski,I. V. Fedorchenko,S. F. Marenkin###
(1426468, 1426471)
 The magnetic properties of Zn1-xMnxGeAs2 samples showthat the random Mn-distribution in the cation sites of the host lattice occursonly for the sample with the lowest Mn-content, x<missing VAR>0.003.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[28.0, -50, '%', 1]

GeAs2
###Low-Dilution Limit of Zn_{1-x}Mn_{x}GeAs_{2}: electrical and magnetic properties|L. Kilanski,K. Szałowski,R. Szymczak,M. Górska,E. Dynowska,P. Aleshkevych,A. Podgórni,A. Avdonin,W. Dobrowolski,I. V. Fedorchenko,S. F. Marenkin###
(1426473, 1426475)
 The magnetic properties of Zn1-xMnxGeAs2 samples showthat the random Mn-distribution in the cation sites of the host lattice occursonly for the sample with the lowest Mn-content, x<missing VAR>0.003.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, -50, '%', 1]

Mn
###Low-Dilution Limit of Zn_{1-x}Mn_{x}GeAs_{2}: electrical and magnetic properties|L. Kilanski,K. Szałowski,R. Szymczak,M. Górska,E. Dynowska,P. Aleshkevych,A. Podgórni,A. Avdonin,W. Dobrowolski,I. V. Fedorchenko,S. F. Marenkin###
(1426488, 1426488)
 The magnetic properties of Zn1-xMnxGeAs2 samples showthat the random Mn-distribution in the cation sites of the host lattice occursonly for the sample with the lowest Mn-content, x<missing VAR>0.003.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, -50, '%', 1]

Mn
###Low-Dilution Limit of Zn_{1-x}Mn_{x}GeAs_{2}: electrical and magnetic properties|L. Kilanski,K. Szałowski,R. Szymczak,M. Górska,E. Dynowska,P. Aleshkevych,A. Podgórni,A. Avdonin,W. Dobrowolski,I. V. Fedorchenko,S. F. Marenkin###
(1426525, 1426525)
 The magnetic properties of Zn1-xMnxGeAs2 samples showthat the random Mn-distribution in the cation sites of the host lattice occursonly for the sample with the lowest Mn-content, x<missing VAR>0.003.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, -50, '%', 1]

Mn
###Low-Dilution Limit of Zn_{1-x}Mn_{x}GeAs_{2}: electrical and magnetic properties|L. Kilanski,K. Szałowski,R. Szymczak,M. Górska,E. Dynowska,P. Aleshkevych,A. Podgórni,A. Avdonin,W. Dobrowolski,I. V. Fedorchenko,S. F. Marenkin###
(1426543, 1426543)
 The samples withhigher Mn-content show a high level of magnetic frustration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, -50, '%', 2]

K
###Low-Dilution Limit of Zn_{1-x}Mn_{x}GeAs_{2}: electrical and magnetic properties|L. Kilanski,K. Szałowski,R. Szymczak,M. Górska,E. Dynowska,P. Aleshkevych,A. Podgórni,A. Avdonin,W. Dobrowolski,I. V. Fedorchenko,S. F. Marenkin###
(1426618, 1426618)
 NonzeroCurie-Weiss temperature observed in all our samples indicates that weakferromagnetic (for x<missing VAR>0.003) or antiferromagnetic (for x<missing VAR>>0.005) interactionswith Theta<3 K are present in this system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, -50, '%', 3]

KKY
###Low-Dilution Limit of Zn_{1-x}Mn_{x}GeAs_{2}: electrical and magnetic properties|L. Kilanski,K. Szałowski,R. Szymczak,M. Górska,E. Dynowska,P. Aleshkevych,A. Podgórni,A. Avdonin,W. Dobrowolski,I. V. Fedorchenko,S. F. Marenkin###
(1426634, 1426636)
 The R<missing VAR>KKY model, used toestimate the Mn-hole exchange integral Jpd for the dilutedZn/0.997/Mn/0.003/GeAs/2/ sample, makes possible to estimate the value of Jpd(0.75/-0.09) e<missing VAR>V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[194.0, -50, '%', 4]

Mn
###Low-Dilution Limit of Zn_{1-x}Mn_{x}GeAs_{2}: electrical and magnetic properties|L. Kilanski,K. Szałowski,R. Szymczak,M. Górska,E. Dynowska,P. Aleshkevych,A. Podgórni,A. Avdonin,W. Dobrowolski,I. V. Fedorchenko,S. F. Marenkin###
(1426650, 1426650)
 The R<missing VAR>KKY model, used toestimate the Mn-hole exchange integral Jpd for the dilutedZn/0.997/Mn/0.003/GeAs/2/ sample, makes possible to estimate the value of Jpd(0.75/-0.09) e<missing VAR>V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[210.0, -50, '%', 4]

Zn
###Low-Dilution Limit of Zn_{1-x}Mn_{x}GeAs_{2}: electrical and magnetic properties|L. Kilanski,K. Szałowski,R. Szymczak,M. Górska,E. Dynowska,P. Aleshkevych,A. Podgórni,A. Avdonin,W. Dobrowolski,I. V. Fedorchenko,S. F. Marenkin###
(1426667, 1426667)
 The R<missing VAR>KKY model, used toestimate the Mn-hole exchange integral Jpd for the dilutedZn/0.997/Mn/0.003/GeAs/2/ sample, makes possible to estimate the value of Jpd(0.75/-0.09) e<missing VAR>V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[227.0, -50, '%', 4]

Mn
###Low-Dilution Limit of Zn_{1-x}Mn_{x}GeAs_{2}: electrical and magnetic properties|L. Kilanski,K. Szałowski,R. Szymczak,M. Górska,E. Dynowska,P. Aleshkevych,A. Podgórni,A. Avdonin,W. Dobrowolski,I. V. Fedorchenko,S. F. Marenkin###
(1426671, 1426671)
 The R<missing VAR>KKY model, used toestimate the Mn-hole exchange integral Jpd for the dilutedZn/0.997/Mn/0.003/GeAs/2/ sample, makes possible to estimate the value of Jpd(0.75/-0.09) e<missing VAR>V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[231.0, -50, '%', 4]

GeAs
###Low-Dilution Limit of Zn_{1-x}Mn_{x}GeAs_{2}: electrical and magnetic properties|L. Kilanski,K. Szałowski,R. Szymczak,M. Górska,E. Dynowska,P. Aleshkevych,A. Podgórni,A. Avdonin,W. Dobrowolski,I. V. Fedorchenko,S. F. Marenkin###
(1426675, 1426676)
 The R<missing VAR>KKY model, used toestimate the Mn-hole exchange integral Jpd for the dilutedZn/0.997/Mn/0.003/GeAs/2/ sample, makes possible to estimate the value of Jpd(0.75/-0.09) e<missing VAR>V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[235.0, -50, '%', 4]

V
###Low-Dilution Limit of Zn_{1-x}Mn_{x}GeAs_{2}: electrical and magnetic properties|L. Kilanski,K. Szałowski,R. Szymczak,M. Górska,E. Dynowska,P. Aleshkevych,A. Podgórni,A. Avdonin,W. Dobrowolski,I. V. Fedorchenko,S. F. Marenkin###
(1426709, 1426709)
 The R<missing VAR>KKY model, used toestimate the Mn-hole exchange integral Jpd for the dilutedZn/0.997/Mn/0.003/GeAs/2/ sample, makes possible to estimate the value of Jpd(0.75/-0.09) e<missing VAR>V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[269.0, -50, '%', 4]

FeSb2
###Origin of the energy gap in the narrow-gap semiconductor FeSb2 revealed by high-pressure magnetotransport measurements|H. Takahashi,R. Okazaki,I. Terasaki,Y. Yasui###
(1427188, 1427190)
Origin of the energy gap in the narrow-gap semiconductor FeSb2 revealed by high-pressure magnetotransport measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 100, 'K', 2],[120.0, 30, 'to', 2],[121.0, 40, 'meV', 2],[128.0, 0, 'to', 2],[129.0, 1.8, 'GPa', 2]

FeSb2
###Origin of the energy gap in the narrow-gap semiconductor FeSb2 revealed by high-pressure magnetotransport measurements|H. Takahashi,R. Okazaki,I. Terasaki,Y. Yasui###
(1427234, 1427236)
 To elucidate an origin of the two energy gaps in the narrow-gap semiconductorFeSb2, we have investigated the effects of hydrostatic pressure on theresistivity, Hall resistance and magnetoresistance at low temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 100, 'K', 1],[74.0, 30, 'to', 1],[75.0, 40, 'meV', 1],[82.0, 0, 'to', 1],[83.0, 1.8, 'GPa', 1]

In
###Origin of the energy gap in the narrow-gap semiconductor FeSb2 revealed by high-pressure magnetotransport measurements|H. Takahashi,R. Okazaki,I. Terasaki,Y. Yasui###
(1427336, 1427336)
 In the low-temperature rangewhere a large Seebeck coefficient was observed, we evaluate the smaller energygap from the magnetotransport tensor using a two-carrier model and find thatthe smaller gap exhibits a weak pressure dependence in contrast to that of thelarger gap.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 100, 'K', 1],[26.0, 30, 'to', 1],[25.0, 40, 'meV', 1],[18.0, 0, 'to', 1],[17.0, 1.8, 'GPa', 1]

Pt
###Spin-Flipping in Pt and at Co/Pt Interfaces|Hoang Yen Thi Nguyen,Jack Bass,William P. Pratt Jr###
(1427567, 1427567)
Spin-Flipping in Pt and at Co/Pt Interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[307.0, 4.2, 'K', 3],[352.0, 0.15, 'fohm', 3]

Co/Pt
###Spin-Flipping in Pt and at Co/Pt Interfaces|Hoang Yen Thi Nguyen,Jack Bass,William P. Pratt Jr###
(1427573, 1427575)
Spin-Flipping in Pt and at Co/Pt Interfaces.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[299.0, 4.2, 'K', 3],[344.0, 0.15, 'fohm', 3]

Pt
###Spin-Flipping in Pt and at Co/Pt Interfaces|Hoang Yen Thi Nguyen,Jack Bass,William P. Pratt Jr###
(1427611, 1427611)
 There has been recent controversy about the magnitude of spin-flipping in theheavy metal Pt, characterized by the spin-diffusion length, lsf(Pt) We proposea resolution of this controversy, and also present evidence for the importanceof a phenomenon neglected in prior studies of transport across sputteredFerromagnetic/Pt (F/Pt) interfaces, spin-flipping at the interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[263.0, 4.2, 'K', 2],[308.0, 0.15, 'fohm', 2]

(Pt)
###Spin-Flipping in Pt and at Co/Pt Interfaces|Hoang Yen Thi Nguyen,Jack Bass,William P. Pratt Jr###
(1427628, 1427630)
 There has been recent controversy about the magnitude of spin-flipping in theheavy metal Pt, characterized by the spin-diffusion length, lsf(Pt) We proposea resolution of this controversy, and also present evidence for the importanceof a phenomenon neglected in prior studies of transport across sputteredFerromagnetic/Pt (F/Pt) interfaces, spin-flipping at the interface.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[244.0, 4.2, 'K', 2],[289.0, 0.15, 'fohm', 2]

Pt
###Spin-Flipping in Pt and at Co/Pt Interfaces|Hoang Yen Thi Nguyen,Jack Bass,William P. Pratt Jr###
(1427688, 1427688)
 There has been recent controversy about the magnitude of spin-flipping in theheavy metal Pt, characterized by the spin-diffusion length, lsf(Pt) We proposea resolution of this controversy, and also present evidence for the importanceof a phenomenon neglected in prior studies of transport across sputteredFerromagnetic/Pt (F/Pt) interfaces, spin-flipping at the interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, 4.2, 'K', 2],[231.0, 0.15, 'fohm', 2]

Pt
###Spin-Flipping in Pt and at Co/Pt Interfaces|Hoang Yen Thi Nguyen,Jack Bass,William P. Pratt Jr###
(1427693, 1427693)
 There has been recent controversy about the magnitude of spin-flipping in theheavy metal Pt, characterized by the spin-diffusion length, lsf(Pt) We proposea resolution of this controversy, and also present evidence for the importanceof a phenomenon neglected in prior studies of transport across sputteredFerromagnetic/Pt (F/Pt) interfaces, spin-flipping at the interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 4.2, 'K', 2],[226.0, 0.15, 'fohm', 2]

Pt
###Spin-Flipping in Pt and at Co/Pt Interfaces|Hoang Yen Thi Nguyen,Jack Bass,William P. Pratt Jr###
(1427736, 1427736)
 The latteris characterized by an interface spin-flipping parameter, delta(Co/Pt) thatspecifies the probability P  [1 - exp(-delta)] of a conduction electronflipping its spin direction as it traverses a Co/Pt interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 4.2, 'K', 1],[183.0, 0.15, 'fohm', 1]

P
###Spin-Flipping in Pt and at Co/Pt Interfaces|Hoang Yen Thi Nguyen,Jack Bass,William P. Pratt Jr###
(1427748, 1427748)
 The latteris characterized by an interface spin-flipping parameter, delta(Co/Pt) thatspecifies the probability P  [1 - exp(-delta)] of a conduction electronflipping its spin direction as it traverses a Co/Pt interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 4.2, 'K', 1],[171.0, 0.15, 'fohm', 1]

Co/Pt
###Spin-Flipping in Pt and at Co/Pt Interfaces|Hoang Yen Thi Nguyen,Jack Bass,William P. Pratt Jr###
(1427788, 1427790)
 The latteris characterized by an interface spin-flipping parameter, delta(Co/Pt) thatspecifies the probability P  [1 - exp(-delta)] of a conduction electronflipping its spin direction as it traverses a Co/Pt interface.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[84.0, 4.2, 'K', 1],[129.0, 0.15, 'fohm', 1]

(CPP)
###Spin-Flipping in Pt and at Co/Pt Interfaces|Hoang Yen Thi Nguyen,Jack Bass,William P. Pratt Jr###
(1427812, 1427816)
 From studies ofthe Current-Perpendicular-to-Plane (CPP) Resistances and Magnetoresistances ofsputtered ferromagnetically coupled Co/Pt multilayers by themselves, andembedded within Py-based Double Exchange-biased Spin-Valves, we derive valuesat 4.2K of delta(Co/Pt)  0.9 (0.5/-0.2), the interface specific resistance,AR<missing VAR>(Co/Pt)  0.74 /- 0.15 fohm-m<missing VAR>(2).
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 4.2, 'K', 0],[103.0, 0.15, 'fohm', 0]

Co/Pt
###Spin-Flipping in Pt and at Co/Pt Interfaces|Hoang Yen Thi Nguyen,Jack Bass,William P. Pratt Jr###
(1427833, 1427835)
 From studies ofthe Current-Perpendicular-to-Plane (CPP) Resistances and Magnetoresistances ofsputtered ferromagnetically coupled Co/Pt multilayers by themselves, andembedded within Py-based Double Exchange-biased Spin-Valves, we derive valuesat 4.2K of delta(Co/Pt)  0.9 (0.5/-0.2), the interface specific resistance,AR<missing VAR>(Co/Pt)  0.74 /- 0.15 fohm-m<missing VAR>(2).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[39.0, 4.2, 'K', 0],[84.0, 0.15, 'fohm', 0]

Pt
###Spin-Flipping in Pt and at Co/Pt Interfaces|Hoang Yen Thi Nguyen,Jack Bass,William P. Pratt Jr###
(1427882, 1427882)
 From studies ofthe Current-Perpendicular-to-Plane (CPP) Resistances and Magnetoresistances ofsputtered ferromagnetically coupled Co/Pt multilayers by themselves, andembedded within Py-based Double Exchange-biased Spin-Valves, we derive valuesat 4.2K of delta(Co/Pt)  0.9 (0.5/-0.2), the interface specific resistance,AR<missing VAR>(Co/Pt)  0.74 /- 0.15 fohm-m<missing VAR>(2).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 4.2, 'K', 0],[37.0, 0.15, 'fohm', 0]

Pt
###Spin-Flipping in Pt and at Co/Pt Interfaces|Hoang Yen Thi Nguyen,Jack Bass,William P. Pratt Jr###
(1427911, 1427911)
 From studies ofthe Current-Perpendicular-to-Plane (CPP) Resistances and Magnetoresistances ofsputtered ferromagnetically coupled Co/Pt multilayers by themselves, andembedded within Py-based Double Exchange-biased Spin-Valves, we derive valuesat 4.2K of delta(Co/Pt)  0.9 (0.5/-0.2), the interface specific resistance,AR<missing VAR>(Co/Pt)  0.74 /- 0.15 fohm-m<missing VAR>(2).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 4.2, 'K', 0],[8.0, 0.15, 'fohm', 0]

Pt
###Spin-Flipping in Pt and at Co/Pt Interfaces|Hoang Yen Thi Nguyen,Jack Bass,William P. Pratt Jr###
(1427945, 1427945)
 and the interface spin-scatteringasymmetry, gamma(Co/Pt)  0.58 /- 0.12.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 4.2, 'K', 1],[26.0, 0.15, 'fohm', 1]

Pt
###Spin-Flipping in Pt and at Co/Pt Interfaces|Hoang Yen Thi Nguyen,Jack Bass,William P. Pratt Jr###
(1427967, 1427967)
 This value of delta(Co/Pt) is muchlarger than ones previously found for interfaces involving Co but not Pt.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 4.2, 'K', 2],[48.0, 0.15, 'fohm', 2]

Co
###Spin-Flipping in Pt and at Co/Pt Interfaces|Hoang Yen Thi Nguyen,Jack Bass,William P. Pratt Jr###
(1427991, 1427991)
 This value of delta(Co/Pt) is muchlarger than ones previously found for interfaces involving Co but not Pt.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 4.2, 'K', 2],[72.0, 0.15, 'fohm', 2]

Pt
###Spin-Flipping in Pt and at Co/Pt Interfaces|Hoang Yen Thi Nguyen,Jack Bass,William P. Pratt Jr###
(1427997, 1427997)
 This value of delta(Co/Pt) is muchlarger than ones previously found for interfaces involving Co but not Pt.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 4.2, 'K', 2],[78.0, 0.15, 'fohm', 2]

(Pt)
###Spin-Flipping in Pt and at Co/Pt Interfaces|Hoang Yen Thi Nguyen,Jack Bass,William P. Pratt Jr###
(1428023, 1428025)
 Toderive delta requires knowledge of the spin-diffusion length, lsf(Pt), for oursputtered Pt.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 4.2, 'K', 3],[104.0, 0.15, 'fohm', 3]

Pt
###Spin-Flipping in Pt and at Co/Pt Interfaces|Hoang Yen Thi Nguyen,Jack Bass,William P. Pratt Jr###
(1428035, 1428035)
 Toderive delta requires knowledge of the spin-diffusion length, lsf(Pt), for oursputtered Pt.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 4.2, 'K', 3],[116.0, 0.15, 'fohm', 3]

(Pt)
###Spin-Flipping in Pt and at Co/Pt Interfaces|Hoang Yen Thi Nguyen,Jack Bass,William P. Pratt Jr###
(1428043, 1428045)
 We derive lsf(Pt) from separate measurements.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 4.2, 'K', 4],[124.0, 0.15, 'fohm', 4]

(Pt)
###Spin-Flipping in Pt and at Co/Pt Interfaces|Hoang Yen Thi Nguyen,Jack Bass,William P. Pratt Jr###
(1428077, 1428079)
 Combining ourresults with those from others, we find that lsf(Pt) for Pt is approximatelyproportional to the inverse resistivity, 1/rho(Pt).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[203.0, 4.2, 'K', 5],[158.0, 0.15, 'fohm', 5]

Pt
###Spin-Flipping in Pt and at Co/Pt Interfaces|Hoang Yen Thi Nguyen,Jack Bass,William P. Pratt Jr###
(1428083, 1428083)
 Combining ourresults with those from others, we find that lsf(Pt) for Pt is approximatelyproportional to the inverse resistivity, 1/rho(Pt).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[209.0, 4.2, 'K', 5],[164.0, 0.15, 'fohm', 5]

(Pt)
###Spin-Flipping in Pt and at Co/Pt Interfaces|Hoang Yen Thi Nguyen,Jack Bass,William P. Pratt Jr###
(1428104, 1428106)
 Combining ourresults with those from others, we find that lsf(Pt) for Pt is approximatelyproportional to the inverse resistivity, 1/rho(Pt).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[230.0, 4.2, 'K', 5],[185.0, 0.15, 'fohm', 5]

Nd2
###Cluster glass magnetism in the phase-separated Nd2/3Ca1/3MnO3 perovskite|Elena Fertman,Sergiy Dolya,Vladimir Desnenko,Anatoly Beznosov,Marcela Kajnakova,Alexander Feher###
(1428131, 1428132)
Cluster glass magnetism in the phase-separated Nd2/3Ca1/3MnO3 perovskite.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 60, 'K', 3],[490.0, 0.4, 'T', 10]

Ca1
###Cluster glass magnetism in the phase-separated Nd2/3Ca1/3MnO3 perovskite|Elena Fertman,Sergiy Dolya,Vladimir Desnenko,Anatoly Beznosov,Marcela Kajnakova,Alexander Feher###
(1428135, 1428136)
Cluster glass magnetism in the phase-separated Nd2/3Ca1/3MnO3 perovskite.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 60, 'K', 3],[486.0, 0.4, 'T', 10]

MnO3
###Cluster glass magnetism in the phase-separated Nd2/3Ca1/3MnO3 perovskite|Elena Fertman,Sergiy Dolya,Vladimir Desnenko,Anatoly Beznosov,Marcela Kajnakova,Alexander Feher###
(1428139, 1428141)
Cluster glass magnetism in the phase-separated Nd2/3Ca1/3MnO3 perovskite.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 60, 'K', 3],[481.0, 0.4, 'T', 10]

Nd2
###Cluster glass magnetism in the phase-separated Nd2/3Ca1/3MnO3 perovskite|Elena Fertman,Sergiy Dolya,Vladimir Desnenko,Anatoly Beznosov,Marcela Kajnakova,Alexander Feher###
(1428183, 1428184)
 A detailed study of the low-temperature magnetic state and the relaxation inthe phase-separated colossal magnetoresistance Nd2/3Ca1/3MnO3 perovskite hasbeen carried out.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 60, 'K', 2],[438.0, 0.4, 'T', 9]

Ca1
###Cluster glass magnetism in the phase-separated Nd2/3Ca1/3MnO3 perovskite|Elena Fertman,Sergiy Dolya,Vladimir Desnenko,Anatoly Beznosov,Marcela Kajnakova,Alexander Feher###
(1428187, 1428188)
 A detailed study of the low-temperature magnetic state and the relaxation inthe phase-separated colossal magnetoresistance Nd2/3Ca1/3MnO3 perovskite hasbeen carried out.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 60, 'K', 2],[434.0, 0.4, 'T', 9]

MnO3
###Cluster glass magnetism in the phase-separated Nd2/3Ca1/3MnO3 perovskite|Elena Fertman,Sergiy Dolya,Vladimir Desnenko,Anatoly Beznosov,Marcela Kajnakova,Alexander Feher###
(1428191, 1428193)
 A detailed study of the low-temperature magnetic state and the relaxation inthe phase-separated colossal magnetoresistance Nd2/3Ca1/3MnO3 perovskite hasbeen carried out.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 60, 'K', 2],[429.0, 0.4, 'T', 9]

H
###Cluster glass magnetism in the phase-separated Nd2/3Ca1/3MnO3 perovskite|Elena Fertman,Sergiy Dolya,Vladimir Desnenko,Anatoly Beznosov,Marcela Kajnakova,Alexander Feher###
(1428620, 1428620)
 Magneticfield up to about mu0H  0.4 T suppresses the glassy magnetic state ofthe compound.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[330.0, 60, 'K', 7],[2.0, 0.4, 'T', 0]

MnAs
###Hyperfine Interactions in MnAs studied by Perturbed Angular Correlations of $γ$-Rays using the probe $^{77}$Br$\rightarrow^{77}$Se and first principles calculations for MnAs and other Mn pnictides|J. N. Gonçalves,V. S. Amaral,J. G. Correia,A. M. L. Lopes###
(1429061, 1429062)
Hyperfine Interactions in MnAs studied by Perturbed Angular Correlations of -Rays using the probe 77Brrightarrow77Se and first principles calculations for MnAs and other Mn pnictides.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[321.0, 1, 'st', 5]

Br
###Hyperfine Interactions in MnAs studied by Perturbed Angular Correlations of $γ$-Rays using the probe $^{77}$Br$\rightarrow^{77}$Se and first principles calculations for MnAs and other Mn pnictides|J. N. Gonçalves,V. S. Amaral,J. G. Correia,A. M. L. Lopes###
(1429086, 1429086)
Hyperfine Interactions in MnAs studied by Perturbed Angular Correlations of -Rays using the probe 77Brrightarrow77Se and first principles calculations for MnAs and other Mn pnictides.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[297.0, 1, 'st', 5]

Se
###Hyperfine Interactions in MnAs studied by Perturbed Angular Correlations of $γ$-Rays using the probe $^{77}$Br$\rightarrow^{77}$Se and first principles calculations for MnAs and other Mn pnictides|J. N. Gonçalves,V. S. Amaral,J. G. Correia,A. M. L. Lopes###
(1429089, 1429089)
Hyperfine Interactions in MnAs studied by Perturbed Angular Correlations of -Rays using the probe 77Brrightarrow77Se and first principles calculations for MnAs and other Mn pnictides.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[294.0, 1, 'st', 5]

MnAs
###Hyperfine Interactions in MnAs studied by Perturbed Angular Correlations of $γ$-Rays using the probe $^{77}$Br$\rightarrow^{77}$Se and first principles calculations for MnAs and other Mn pnictides|J. N. Gonçalves,V. S. Amaral,J. G. Correia,A. M. L. Lopes###
(1429101, 1429102)
Hyperfine Interactions in MnAs studied by Perturbed Angular Correlations of -Rays using the probe 77Brrightarrow77Se and first principles calculations for MnAs and other Mn pnictides.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[281.0, 1, 'st', 5]

Mn
###Hyperfine Interactions in MnAs studied by Perturbed Angular Correlations of $γ$-Rays using the probe $^{77}$Br$\rightarrow^{77}$Se and first principles calculations for MnAs and other Mn pnictides|J. N. Gonçalves,V. S. Amaral,J. G. Correia,A. M. L. Lopes###
(1429108, 1429108)
Hyperfine Interactions in MnAs studied by Perturbed Angular Correlations of -Rays using the probe 77Brrightarrow77Se and first principles calculations for MnAs and other Mn pnictides.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[275.0, 1, 'st', 5]

MnAs
###Hyperfine Interactions in MnAs studied by Perturbed Angular Correlations of $γ$-Rays using the probe $^{77}$Br$\rightarrow^{77}$Se and first principles calculations for MnAs and other Mn pnictides|J. N. Gonçalves,V. S. Amaral,J. G. Correia,A. M. L. Lopes###
(1429115, 1429116)
 The MnAs compound shows a first-order transition at T<missing VAR>Capprox42 C, and asecond-order transition at Ttapprox120 C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[267.0, 1, 'st', 4]

C
###Hyperfine Interactions in MnAs studied by Perturbed Angular Correlations of $γ$-Rays using the probe $^{77}$Br$\rightarrow^{77}$Se and first principles calculations for MnAs and other Mn pnictides|J. N. Gonçalves,V. S. Amaral,J. G. Correia,A. M. L. Lopes###
(1429133, 1429133)
 The MnAs compound shows a first-order transition at T<missing VAR>Capprox42 C, and asecond-order transition at Ttapprox120 C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[250.0, 1, 'st', 4]

C
###Hyperfine Interactions in MnAs studied by Perturbed Angular Correlations of $γ$-Rays using the probe $^{77}$Br$\rightarrow^{77}$Se and first principles calculations for MnAs and other Mn pnictides|J. N. Gonçalves,V. S. Amaral,J. G. Correia,A. M. L. Lopes###
(1429137, 1429137)
 The MnAs compound shows a first-order transition at T<missing VAR>Capprox42 C, and asecond-order transition at Ttapprox120 C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[246.0, 1, 'st', 4]

C
###Hyperfine Interactions in MnAs studied by Perturbed Angular Correlations of $γ$-Rays using the probe $^{77}$Br$\rightarrow^{77}$Se and first principles calculations for MnAs and other Mn pnictides|J. N. Gonçalves,V. S. Amaral,J. G. Correia,A. M. L. Lopes###
(1429158, 1429158)
 The MnAs compound shows a first-order transition at T<missing VAR>Capprox42 C, and asecond-order transition at Ttapprox120 C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[225.0, 1, 'st', 4]

F
###Hyperfine Interactions in MnAs studied by Perturbed Angular Correlations of $γ$-Rays using the probe $^{77}$Br$\rightarrow^{77}$Se and first principles calculations for MnAs and other Mn pnictides|J. N. Gonçalves,V. S. Amaral,J. G. Correia,A. M. L. Lopes###
(1429185, 1429185)
 The first-order transition, withstructural (hexagonal-orthorhombic), magnetic (FM<missing VAR>-PM) and electricalconductivity changes, is associated to magnetocaloric, magnetoelastic, andmagnetoresistance effects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[198.0, 1, 'st', 3]

P
###Hyperfine Interactions in MnAs studied by Perturbed Angular Correlations of $γ$-Rays using the probe $^{77}$Br$\rightarrow^{77}$Se and first principles calculations for MnAs and other Mn pnictides|J. N. Gonçalves,V. S. Amaral,J. G. Correia,A. M. L. Lopes###
(1429188, 1429188)
 The first-order transition, withstructural (hexagonal-orthorhombic), magnetic (FM<missing VAR>-PM) and electricalconductivity changes, is associated to magnetocaloric, magnetoelastic, andmagnetoresistance effects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[195.0, 1, 'st', 3]

C
###Hyperfine Interactions in MnAs studied by Perturbed Angular Correlations of $γ$-Rays using the probe $^{77}$Br$\rightarrow^{77}$Se and first principles calculations for MnAs and other Mn pnictides|J. N. Gonçalves,V. S. Amaral,J. G. Correia,A. M. L. Lopes###
(1429252, 1429252)
 We report a study in a large temperature range from-196 up to 140 C, using the gamma-gamma perturbed angular correlationsmethod with the radioactive probe 77Brrightarrow77Se, produced atthe ISOLDE-CERN facility.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 1, 'st', 2]

Br
###Hyperfine Interactions in MnAs studied by Perturbed Angular Correlations of $γ$-Rays using the probe $^{77}$Br$\rightarrow^{77}$Se and first principles calculations for MnAs and other Mn pnictides|J. N. Gonçalves,V. S. Amaral,J. G. Correia,A. M. L. Lopes###
(1429281, 1429281)
 We report a study in a large temperature range from-196 up to 140 C, using the gamma-gamma perturbed angular correlationsmethod with the radioactive probe 77Brrightarrow77Se, produced atthe ISOLDE-CERN facility.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 1, 'st', 2]

Se
###Hyperfine Interactions in MnAs studied by Perturbed Angular Correlations of $γ$-Rays using the probe $^{77}$Br$\rightarrow^{77}$Se and first principles calculations for MnAs and other Mn pnictides|J. N. Gonçalves,V. S. Amaral,J. G. Correia,A. M. L. Lopes###
(1429284, 1429284)
 We report a study in a large temperature range from-196 up to 140 C, using the gamma-gamma perturbed angular correlationsmethod with the radioactive probe 77Brrightarrow77Se, produced atthe ISOLDE-CERN facility.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 1, 'st', 2]

ISO
###Hyperfine Interactions in MnAs studied by Perturbed Angular Correlations of $γ$-Rays using the probe $^{77}$Br$\rightarrow^{77}$Se and first principles calculations for MnAs and other Mn pnictides|J. N. Gonçalves,V. S. Amaral,J. G. Correia,A. M. L. Lopes###
(1429294, 1429296)
 We report a study in a large temperature range from-196 up to 140 C, using the gamma-gamma perturbed angular correlationsmethod with the radioactive probe 77Brrightarrow77Se, produced atthe ISOLDE-CERN facility.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 1, 'st', 2]

C
###Hyperfine Interactions in MnAs studied by Perturbed Angular Correlations of $γ$-Rays using the probe $^{77}$Br$\rightarrow^{77}$Se and first principles calculations for MnAs and other Mn pnictides|J. N. Gonçalves,V. S. Amaral,J. G. Correia,A. M. L. Lopes###
(1429301, 1429301)
 We report a study in a large temperature range from-196 up to 140 C, using the gamma-gamma perturbed angular correlationsmethod with the radioactive probe 77Brrightarrow77Se, produced atthe ISOLDE-CERN facility.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 1, 'st', 2]

N
###Hyperfine Interactions in MnAs studied by Perturbed Angular Correlations of $γ$-Rays using the probe $^{77}$Br$\rightarrow^{77}$Se and first principles calculations for MnAs and other Mn pnictides|J. N. Gonçalves,V. S. Amaral,J. G. Correia,A. M. L. Lopes###
(1429304, 1429304)
 We report a study in a large temperature range from-196 up to 140 C, using the gamma-gamma perturbed angular correlationsmethod with the radioactive probe 77Brrightarrow77Se, produced atthe ISOLDE-CERN facility.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 1, 'st', 2]

PW
###Hyperfine Interactions in MnAs studied by Perturbed Angular Correlations of $γ$-Rays using the probe $^{77}$Br$\rightarrow^{77}$Se and first principles calculations for MnAs and other Mn pnictides|J. N. Gonçalves,V. S. Amaral,J. G. Correia,A. M. L. Lopes###
(1429516, 1429517)
 To interpret theresults, hyperfine parameters were obtained with first-principlesspin-polarized density functional calculations using the generalized gradientapproximation with the full potential (L)APWlo method (textscWien2k<missing VAR> code)by considering the Se probe at both Mn and As sites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 1, 'st', 1]

Se
###Hyperfine Interactions in MnAs studied by Perturbed Angular Correlations of $γ$-Rays using the probe $^{77}$Br$\rightarrow^{77}$Se and first principles calculations for MnAs and other Mn pnictides|J. N. Gonçalves,V. S. Amaral,J. G. Correia,A. M. L. Lopes###
(1429538, 1429538)
 To interpret theresults, hyperfine parameters were obtained with first-principlesspin-polarized density functional calculations using the generalized gradientapproximation with the full potential (L)APWlo method (textscWien2k<missing VAR> code)by considering the Se probe at both Mn and As sites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 1, 'st', 1]

Mn
###Hyperfine Interactions in MnAs studied by Perturbed Angular Correlations of $γ$-Rays using the probe $^{77}$Br$\rightarrow^{77}$Se and first principles calculations for MnAs and other Mn pnictides|J. N. Gonçalves,V. S. Amaral,J. G. Correia,A. M. L. Lopes###
(1429546, 1429546)
 To interpret theresults, hyperfine parameters were obtained with first-principlesspin-polarized density functional calculations using the generalized gradientapproximation with the full potential (L)APWlo method (textscWien2k<missing VAR> code)by considering the Se probe at both Mn and As sites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 1, 'st', 1]

As
###Hyperfine Interactions in MnAs studied by Perturbed Angular Correlations of $γ$-Rays using the probe $^{77}$Br$\rightarrow^{77}$Se and first principles calculations for MnAs and other Mn pnictides|J. N. Gonçalves,V. S. Amaral,J. G. Correia,A. M. L. Lopes###
(1429550, 1429550)
 To interpret theresults, hyperfine parameters were obtained with first-principlesspin-polarized density functional calculations using the generalized gradientapproximation with the full potential (L)APWlo method (textscWien2k<missing VAR> code)by considering the Se probe at both Mn and As sites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 1, 'st', 1]

As
###Hyperfine Interactions in MnAs studied by Perturbed Angular Correlations of $γ$-Rays using the probe $^{77}$Br$\rightarrow^{77}$Se and first principles calculations for MnAs and other Mn pnictides|J. N. Gonçalves,V. S. Amaral,J. G. Correia,A. M. L. Lopes###
(1429574, 1429574)
 A clear assignment of theprobe location at the As site is made and complemented with the calculateddensities of states and local magnetic moments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[191.0, 1, 'st', 2]

MnSb
###Hyperfine Interactions in MnAs studied by Perturbed Angular Correlations of $γ$-Rays using the probe $^{77}$Br$\rightarrow^{77}$Se and first principles calculations for MnAs and other Mn pnictides|J. N. Gonçalves,V. S. Amaral,J. G. Correia,A. M. L. Lopes###
(1429629, 1429630)
 We model electronic andmagnetic properties of the chemically similar MnSb and MnBi compounds,complementing previous calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[246.0, 1, 'st', 3]

MnBi
###Hyperfine Interactions in MnAs studied by Perturbed Angular Correlations of $γ$-Rays using the probe $^{77}$Br$\rightarrow^{77}$Se and first principles calculations for MnAs and other Mn pnictides|J. N. Gonçalves,V. S. Amaral,J. G. Correia,A. M. L. Lopes###
(1429634, 1429635)
 We model electronic andmagnetic properties of the chemically similar MnSb and MnBi compounds,complementing previous calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[251.0, 1, 'st', 3]

SrTiO3
###Unravelling the effect of SrTiO3 antiferrodistortive phase transition on the magnetic properties of La0.7Sr0.3MnO3 thin films|D. A. Mota,Y. Romaguera Barcelay,A. M. R. Senos,C. M. Fernandes,P. B. Tavares,I. T. Gomes,P. Sá,L. Fernandes,B. G. Almeida,F. Figueiras,P. Mirzadeh Vaghefi,V. S. Amaral,A. Almeida,J. Pérez de la Cruz,J. Agostinho Moreira###
(1429664, 1429667)
Unravelling the effect of SrTiO3 antiferrodistortive phase transition on the magnetic properties of La0.7Sr0.3MnO3 thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 20, 'nm', 1],[68.0, 330, 'nm', 1],[229.0, 100, 'nm', 3],[322.0, 100, 'nm', 4]

La0.7Sr0.3MnO3
###Unravelling the effect of SrTiO3 antiferrodistortive phase transition on the magnetic properties of La0.7Sr0.3MnO3 thin films|D. A. Mota,Y. Romaguera Barcelay,A. M. R. Senos,C. M. Fernandes,P. B. Tavares,I. T. Gomes,P. Sá,L. Fernandes,B. G. Almeida,F. Figueiras,P. Mirzadeh Vaghefi,V. S. Amaral,A. Almeida,J. Pérez de la Cruz,J. Agostinho Moreira###
(1429685, 1429691)
Unravelling the effect of SrTiO3 antiferrodistortive phase transition on the magnetic properties of La0.7Sr0.3MnO3 thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 20, 'nm', 1],[44.0, 330, 'nm', 1],[205.0, 100, 'nm', 3],[298.0, 100, 'nm', 4]

La0.7Sr0.3MnO3
###Unravelling the effect of SrTiO3 antiferrodistortive phase transition on the magnetic properties of La0.7Sr0.3MnO3 thin films|D. A. Mota,Y. Romaguera Barcelay,A. M. R. Senos,C. M. Fernandes,P. B. Tavares,I. T. Gomes,P. Sá,L. Fernandes,B. G. Almeida,F. Figueiras,P. Mirzadeh Vaghefi,V. S. Amaral,A. Almeida,J. Pérez de la Cruz,J. Agostinho Moreira###
(1429700, 1429706)
 Epitaxial La0.7Sr0.3MnO3 (LSMO) thin films, with different thickness rangingfrom 20 nm up to 330 nm, were deposited on (100)-oriented strontium titanate(ST<missing VAR>O) substrates by pulsed laser deposition, and their structure and morphologycharacterized at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 20, 'nm', 0],[29.0, 330, 'nm', 0],[190.0, 100, 'nm', 2],[283.0, 100, 'nm', 3]

O
###Unravelling the effect of SrTiO3 antiferrodistortive phase transition on the magnetic properties of La0.7Sr0.3MnO3 thin films|D. A. Mota,Y. Romaguera Barcelay,A. M. R. Senos,C. M. Fernandes,P. B. Tavares,I. T. Gomes,P. Sá,L. Fernandes,B. G. Almeida,F. Figueiras,P. Mirzadeh Vaghefi,V. S. Amaral,A. Almeida,J. Pérez de la Cruz,J. Agostinho Moreira###
(1429712, 1429712)
 Epitaxial La0.7Sr0.3MnO3 (LSMO) thin films, with different thickness rangingfrom 20 nm up to 330 nm, were deposited on (100)-oriented strontium titanate(ST<missing VAR>O) substrates by pulsed laser deposition, and their structure and morphologycharacterized at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 20, 'nm', 0],[23.0, 330, 'nm', 0],[184.0, 100, 'nm', 2],[277.0, 100, 'nm', 3]

S
###Unravelling the effect of SrTiO3 antiferrodistortive phase transition on the magnetic properties of La0.7Sr0.3MnO3 thin films|D. A. Mota,Y. Romaguera Barcelay,A. M. R. Senos,C. M. Fernandes,P. B. Tavares,I. T. Gomes,P. Sá,L. Fernandes,B. G. Almeida,F. Figueiras,P. Mirzadeh Vaghefi,V. S. Amaral,A. Almeida,J. Pérez de la Cruz,J. Agostinho Moreira###
(1429756, 1429756)
 Epitaxial La0.7Sr0.3MnO3 (LSMO) thin films, with different thickness rangingfrom 20 nm up to 330 nm, were deposited on (100)-oriented strontium titanate(ST<missing VAR>O) substrates by pulsed laser deposition, and their structure and morphologycharacterized at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 20, 'nm', 0],[21.0, 330, 'nm', 0],[140.0, 100, 'nm', 2],[233.0, 100, 'nm', 3]

O
###Unravelling the effect of SrTiO3 antiferrodistortive phase transition on the magnetic properties of La0.7Sr0.3MnO3 thin films|D. A. Mota,Y. Romaguera Barcelay,A. M. R. Senos,C. M. Fernandes,P. B. Tavares,I. T. Gomes,P. Sá,L. Fernandes,B. G. Almeida,F. Figueiras,P. Mirzadeh Vaghefi,V. S. Amaral,A. Almeida,J. Pérez de la Cruz,J. Agostinho Moreira###
(1429758, 1429758)
 Epitaxial La0.7Sr0.3MnO3 (LSMO) thin films, with different thickness rangingfrom 20 nm up to 330 nm, were deposited on (100)-oriented strontium titanate(ST<missing VAR>O) substrates by pulsed laser deposition, and their structure and morphologycharacterized at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 20, 'nm', 0],[23.0, 330, 'nm', 0],[138.0, 100, 'nm', 2],[231.0, 100, 'nm', 3]

S
###Unravelling the effect of SrTiO3 antiferrodistortive phase transition on the magnetic properties of La0.7Sr0.3MnO3 thin films|D. A. Mota,Y. Romaguera Barcelay,A. M. R. Senos,C. M. Fernandes,P. B. Tavares,I. T. Gomes,P. Sá,L. Fernandes,B. G. Almeida,F. Figueiras,P. Mirzadeh Vaghefi,V. S. Amaral,A. Almeida,J. Pérez de la Cruz,J. Agostinho Moreira###
(1429845, 1429845)
 Magnetic and electric transport propertiesof the as-processed thin films reveal an abnormal behavior in the temperaturedependent magnetization M(T) below the antiferrodistortive ST<missing VAR>O phase transition(TSTO) and also an anomaly in the magnetoresistance and electrical resistivityclose to the same temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 20, 'nm', 1],[110.0, 330, 'nm', 1],[51.0, 100, 'nm', 1],[144.0, 100, 'nm', 2]

O
###Unravelling the effect of SrTiO3 antiferrodistortive phase transition on the magnetic properties of La0.7Sr0.3MnO3 thin films|D. A. Mota,Y. Romaguera Barcelay,A. M. R. Senos,C. M. Fernandes,P. B. Tavares,I. T. Gomes,P. Sá,L. Fernandes,B. G. Almeida,F. Figueiras,P. Mirzadeh Vaghefi,V. S. Amaral,A. Almeida,J. Pérez de la Cruz,J. Agostinho Moreira###
(1429847, 1429847)
 Magnetic and electric transport propertiesof the as-processed thin films reveal an abnormal behavior in the temperaturedependent magnetization M(T) below the antiferrodistortive ST<missing VAR>O phase transition(TSTO) and also an anomaly in the magnetoresistance and electrical resistivityclose to the same temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 20, 'nm', 1],[112.0, 330, 'nm', 1],[49.0, 100, 'nm', 1],[142.0, 100, 'nm', 2]

O
###Unravelling the effect of SrTiO3 antiferrodistortive phase transition on the magnetic properties of La0.7Sr0.3MnO3 thin films|D. A. Mota,Y. Romaguera Barcelay,A. M. R. Senos,C. M. Fernandes,P. B. Tavares,I. T. Gomes,P. Sá,L. Fernandes,B. G. Almeida,F. Figueiras,P. Mirzadeh Vaghefi,V. S. Amaral,A. Almeida,J. Pérez de la Cruz,J. Agostinho Moreira###
(1429858, 1429858)
 Magnetic and electric transport propertiesof the as-processed thin films reveal an abnormal behavior in the temperaturedependent magnetization M(T) below the antiferrodistortive ST<missing VAR>O phase transition(TSTO) and also an anomaly in the magnetoresistance and electrical resistivityclose to the same temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 20, 'nm', 1],[123.0, 330, 'nm', 1],[38.0, 100, 'nm', 1],[131.0, 100, 'nm', 2]

O
###Unravelling the effect of SrTiO3 antiferrodistortive phase transition on the magnetic properties of La0.7Sr0.3MnO3 thin films|D. A. Mota,Y. Romaguera Barcelay,A. M. R. Senos,C. M. Fernandes,P. B. Tavares,I. T. Gomes,P. Sá,L. Fernandes,B. G. Almeida,F. Figueiras,P. Mirzadeh Vaghefi,V. S. Amaral,A. Almeida,J. Pérez de la Cruz,J. Agostinho Moreira###
(1429901, 1429901)
 Up to 100 nm LSMO thin films, an in-excessmagnetization and pronounced changes in the coercivity are evidenced, achievedthrough the interface-mediated magnetoelastic coupling with antiferrodistortivedomain wall movement occurring below TSTO.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[171.0, 20, 'nm', 2],[166.0, 330, 'nm', 2],[5.0, 100, 'nm', 0],[88.0, 100, 'nm', 1]

O
###Unravelling the effect of SrTiO3 antiferrodistortive phase transition on the magnetic properties of La0.7Sr0.3MnO3 thin films|D. A. Mota,Y. Romaguera Barcelay,A. M. R. Senos,C. M. Fernandes,P. B. Tavares,I. T. Gomes,P. Sá,L. Fernandes,B. G. Almeida,F. Figueiras,P. Mirzadeh Vaghefi,V. S. Amaral,A. Almeida,J. Pérez de la Cruz,J. Agostinho Moreira###
(1429967, 1429967)
 Up to 100 nm LSMO thin films, an in-excessmagnetization and pronounced changes in the coercivity are evidenced, achievedthrough the interface-mediated magnetoelastic coupling with antiferrodistortivedomain wall movement occurring below TSTO.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[237.0, 20, 'nm', 2],[232.0, 330, 'nm', 2],[71.0, 100, 'nm', 0],[22.0, 100, 'nm', 1]

O
###Unravelling the effect of SrTiO3 antiferrodistortive phase transition on the magnetic properties of La0.7Sr0.3MnO3 thin films|D. A. Mota,Y. Romaguera Barcelay,A. M. R. Senos,C. M. Fernandes,P. B. Tavares,I. T. Gomes,P. Sá,L. Fernandes,B. G. Almeida,F. Figueiras,P. Mirzadeh Vaghefi,V. S. Amaral,A. Almeida,J. Pérez de la Cruz,J. Agostinho Moreira###
(1429980, 1429980)
 Contrarily, for thicker LSMO thinfilms, above 100 nm, an in-defect magnetization is observed.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[250.0, 20, 'nm', 3],[245.0, 330, 'nm', 3],[84.0, 100, 'nm', 1],[9.0, 100, 'nm', 0]

Mn
###Ferromagnetism and Spin-dependent Transport in n-type Mn-Bi2Te3 Thin Films|Joon Sue Lee,Anthony Richardella,David W. Rench,Robert D. Fraleigh,Thomas C. Flanagan,Julie A. Borchers,Jing Tao,Nitin Samarth###
(1430197, 1430197)
Ferromagnetism and Spin-dependent Transport in n<missing VAR>-type Mn-Bi2Te3 Thin Films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, 13.8, 'K', 3],[189.0, 17, 'K', 3],[271.0, 68, 'nm', 5],[390.0, 2.8, 'x', 7]

Bi2Te3
###Ferromagnetism and Spin-dependent Transport in n-type Mn-Bi2Te3 Thin Films|Joon Sue Lee,Anthony Richardella,David W. Rench,Robert D. Fraleigh,Thomas C. Flanagan,Julie A. Borchers,Jing Tao,Nitin Samarth###
(1430199, 1430202)
Ferromagnetism and Spin-dependent Transport in n<missing VAR>-type Mn-Bi2Te3 Thin Films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 13.8, 'K', 3],[184.0, 17, 'K', 3],[266.0, 68, 'nm', 5],[385.0, 2.8, 'x', 7]

Mn
###Ferromagnetism and Spin-dependent Transport in n-type Mn-Bi2Te3 Thin Films|Joon Sue Lee,Anthony Richardella,David W. Rench,Robert D. Fraleigh,Thomas C. Flanagan,Julie A. Borchers,Jing Tao,Nitin Samarth###
(1430250, 1430250)
 We describe a detailed study of the structural, magnetic, andmagneto-transport properties of single-crystal, n<missing VAR>-type, Mn-doped Bi2Te3 thinfilms grown by molecular beam epitaxy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 13.8, 'K', 2],[136.0, 17, 'K', 2],[218.0, 68, 'nm', 4],[337.0, 2.8, 'x', 6]

Bi2Te3
###Ferromagnetism and Spin-dependent Transport in n-type Mn-Bi2Te3 Thin Films|Joon Sue Lee,Anthony Richardella,David W. Rench,Robert D. Fraleigh,Thomas C. Flanagan,Julie A. Borchers,Jing Tao,Nitin Samarth###
(1430254, 1430257)
 We describe a detailed study of the structural, magnetic, andmagneto-transport properties of single-crystal, n<missing VAR>-type, Mn-doped Bi2Te3 thinfilms grown by molecular beam epitaxy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 13.8, 'K', 2],[129.0, 17, 'K', 2],[211.0, 68, 'nm', 4],[330.0, 2.8, 'x', 6]

Mn
###Ferromagnetism and Spin-dependent Transport in n-type Mn-Bi2Te3 Thin Films|Joon Sue Lee,Anthony Richardella,David W. Rench,Robert D. Fraleigh,Thomas C. Flanagan,Julie A. Borchers,Jing Tao,Nitin Samarth###
(1430279, 1430279)
 With increasing Mn concentration, thecrystal structure changes from the tetradymite structure of the Bi2Te3 parentcrystal at low Mn concentrations towards a BiTe phase in the (Bi2Te3)m<missing VAR>(Bi2)n<missing VAR>homologous series.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 13.8, 'K', 1],[107.0, 17, 'K', 1],[189.0, 68, 'nm', 3],[308.0, 2.8, 'x', 5]

Bi2Te3
###Ferromagnetism and Spin-dependent Transport in n-type Mn-Bi2Te3 Thin Films|Joon Sue Lee,Anthony Richardella,David W. Rench,Robert D. Fraleigh,Thomas C. Flanagan,Julie A. Borchers,Jing Tao,Nitin Samarth###
(1430305, 1430308)
 With increasing Mn concentration, thecrystal structure changes from the tetradymite structure of the Bi2Te3 parentcrystal at low Mn concentrations towards a BiTe phase in the (Bi2Te3)m<missing VAR>(Bi2)n<missing VAR>homologous series.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 13.8, 'K', 1],[78.0, 17, 'K', 1],[160.0, 68, 'nm', 3],[279.0, 2.8, 'x', 5]

Mn
###Ferromagnetism and Spin-dependent Transport in n-type Mn-Bi2Te3 Thin Films|Joon Sue Lee,Anthony Richardella,David W. Rench,Robert D. Fraleigh,Thomas C. Flanagan,Julie A. Borchers,Jing Tao,Nitin Samarth###
(1430319, 1430319)
 With increasing Mn concentration, thecrystal structure changes from the tetradymite structure of the Bi2Te3 parentcrystal at low Mn concentrations towards a BiTe phase in the (Bi2Te3)m<missing VAR>(Bi2)n<missing VAR>homologous series.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 13.8, 'K', 1],[67.0, 17, 'K', 1],[149.0, 68, 'nm', 3],[268.0, 2.8, 'x', 5]

BiTe
###Ferromagnetism and Spin-dependent Transport in n-type Mn-Bi2Te3 Thin Films|Joon Sue Lee,Anthony Richardella,David W. Rench,Robert D. Fraleigh,Thomas C. Flanagan,Julie A. Borchers,Jing Tao,Nitin Samarth###
(1430327, 1430328)
 With increasing Mn concentration, thecrystal structure changes from the tetradymite structure of the Bi2Te3 parentcrystal at low Mn concentrations towards a BiTe phase in the (Bi2Te3)m<missing VAR>(Bi2)n<missing VAR>homologous series.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 13.8, 'K', 1],[58.0, 17, 'K', 1],[140.0, 68, 'nm', 3],[259.0, 2.8, 'x', 5]

(Bi2Te3)
###Ferromagnetism and Spin-dependent Transport in n-type Mn-Bi2Te3 Thin Films|Joon Sue Lee,Anthony Richardella,David W. Rench,Robert D. Fraleigh,Thomas C. Flanagan,Julie A. Borchers,Jing Tao,Nitin Samarth###
(1430336, 1430341)
 With increasing Mn concentration, thecrystal structure changes from the tetradymite structure of the Bi2Te3 parentcrystal at low Mn concentrations towards a BiTe phase in the (Bi2Te3)m<missing VAR>(Bi2)n<missing VAR>homologous series.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 13.8, 'K', 1],[45.0, 17, 'K', 1],[127.0, 68, 'nm', 3],[246.0, 2.8, 'x', 5]

(Bi2)
###Ferromagnetism and Spin-dependent Transport in n-type Mn-Bi2Te3 Thin Films|Joon Sue Lee,Anthony Richardella,David W. Rench,Robert D. Fraleigh,Thomas C. Flanagan,Julie A. Borchers,Jing Tao,Nitin Samarth###
(1430343, 1430346)
 With increasing Mn concentration, thecrystal structure changes from the tetradymite structure of the Bi2Te3 parentcrystal at low Mn concentrations towards a BiTe phase in the (Bi2Te3)m<missing VAR>(Bi2)n<missing VAR>homologous series.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 13.8, 'K', 1],[40.0, 17, 'K', 1],[122.0, 68, 'nm', 3],[241.0, 2.8, 'x', 5]

Mn
###Ferromagnetism and Spin-dependent Transport in n-type Mn-Bi2Te3 Thin Films|Joon Sue Lee,Anthony Richardella,David W. Rench,Robert D. Fraleigh,Thomas C. Flanagan,Julie A. Borchers,Jing Tao,Nitin Samarth###
(1430405, 1430405)
 Magnetization measurements reveal the onset offerromagnetism with a Curie temperature in the range 13.8 K - 17 K in filmswith 2 % - 10 % Mn concentration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 13.8, 'K', 0],[19.0, 17, 'K', 0],[63.0, 68, 'nm', 2],[182.0, 2.8, 'x', 4]

Mn
###Ferromagnetism and Spin-dependent Transport in n-type Mn-Bi2Te3 Thin Films|Joon Sue Lee,Anthony Richardella,David W. Rench,Robert D. Fraleigh,Thomas C. Flanagan,Julie A. Borchers,Jing Tao,Nitin Samarth###
(1430571, 1430571)
 Ordinary Halleffect measurements show that the carrier density is n<missing VAR>-type, increases with Mndoping, and is high enough (> 2.8 x 1013 cm-2) to place the chemicalpotential in the conduction band.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 13.8, 'K', 4],[185.0, 17, 'K', 4],[103.0, 68, 'nm', 2],[16.0, 2.8, 'x', 0]

Mn
###Ferromagnetism and Spin-dependent Transport in n-type Mn-Bi2Te3 Thin Films|Joon Sue Lee,Anthony Richardella,David W. Rench,Robert D. Fraleigh,Thomas C. Flanagan,Julie A. Borchers,Jing Tao,Nitin Samarth###
(1430685, 1430685)
 Surprisingly, the Curietemperature does not show any clear dependence on the carrier density but doesincrease with Mn concentration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[302.0, 13.8, 'K', 6],[299.0, 17, 'K', 6],[217.0, 68, 'nm', 4],[98.0, 2.8, 'x', 2]

Mn
###Ferromagnetism and Spin-dependent Transport in n-type Mn-Bi2Te3 Thin Films|Joon Sue Lee,Anthony Richardella,David W. Rench,Robert D. Fraleigh,Thomas C. Flanagan,Julie A. Borchers,Jing Tao,Nitin Samarth###
(1430709, 1430709)
 Our results suggest that the ferromagnetismprobed in these Mn-doped Bi2Te3 films is not mediated by carriers in theconduction band or in an impurity band.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[326.0, 13.8, 'K', 7],[323.0, 17, 'K', 7],[241.0, 68, 'nm', 5],[122.0, 2.8, 'x', 3]

Bi2Te3
###Ferromagnetism and Spin-dependent Transport in n-type Mn-Bi2Te3 Thin Films|Joon Sue Lee,Anthony Richardella,David W. Rench,Robert D. Fraleigh,Thomas C. Flanagan,Julie A. Borchers,Jing Tao,Nitin Samarth###
(1430713, 1430716)
 Our results suggest that the ferromagnetismprobed in these Mn-doped Bi2Te3 films is not mediated by carriers in theconduction band or in an impurity band.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[330.0, 13.8, 'K', 7],[327.0, 17, 'K', 7],[245.0, 68, 'nm', 5],[126.0, 2.8, 'x', 3]

K
###Strong and nonmonotonic temperature dependence of Hall coefficient in superconducting K$_x$Fe$_{2-y}$Se$_2$ single crystals|Xiaxin Ding,Yiming Pan,Huan Yang,Hai-Hu Wen###
(1430778, 1430778)
Strong and nonmonotonic temperature dependence of Hall coefficient in superconducting Kx<missing VAR>Fe2-ySe2 single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 80, 'K', 2],[110.0, 80, 'K', 2],[150.0, 80, 'K', 3],[209.0, 65, 'K', 4],[217.0, 65, 'K', 5]

Fe2-ySe2
###Strong and nonmonotonic temperature dependence of Hall coefficient in superconducting K$_x$Fe$_{2-y}$Se$_2$ single crystals|Xiaxin Ding,Yiming Pan,Huan Yang,Hai-Hu Wen###
(1430780, 1430785)
Strong and nonmonotonic temperature dependence of Hall coefficient in superconducting Kx<missing VAR>Fe2-ySe2 single crystals.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[93.0, 80, 'K', 2],[103.0, 80, 'K', 2],[143.0, 80, 'K', 3],[202.0, 65, 'K', 4],[210.0, 65, 'K', 5]

In
###Strong and nonmonotonic temperature dependence of Hall coefficient in superconducting K$_x$Fe$_{2-y}$Se$_2$ single crystals|Xiaxin Ding,Yiming Pan,Huan Yang,Hai-Hu Wen###
(1430792, 1430792)
 In-plane resistivity, magnetoresistance and Hall effect measurements havebeen conducted on quenched Kx<missing VAR>Fe2-ySe2 single crystals in order toanalysis the normal-state transport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 80, 'K', 1],[96.0, 80, 'K', 1],[136.0, 80, 'K', 2],[195.0, 65, 'K', 3],[203.0, 65, 'K', 4]

K
###Strong and nonmonotonic temperature dependence of Hall coefficient in superconducting K$_x$Fe$_{2-y}$Se$_2$ single crystals|Xiaxin Ding,Yiming Pan,Huan Yang,Hai-Hu Wen###
(1430820, 1430820)
 In-plane resistivity, magnetoresistance and Hall effect measurements havebeen conducted on quenched Kx<missing VAR>Fe2-ySe2 single crystals in order toanalysis the normal-state transport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 80, 'K', 1],[68.0, 80, 'K', 1],[108.0, 80, 'K', 2],[167.0, 65, 'K', 3],[175.0, 65, 'K', 4]

Fe2-ySe2
###Strong and nonmonotonic temperature dependence of Hall coefficient in superconducting K$_x$Fe$_{2-y}$Se$_2$ single crystals|Xiaxin Ding,Yiming Pan,Huan Yang,Hai-Hu Wen###
(1430822, 1430827)
 In-plane resistivity, magnetoresistance and Hall effect measurements havebeen conducted on quenched Kx<missing VAR>Fe2-ySe2 single crystals in order toanalysis the normal-state transport properties.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[51.0, 80, 'K', 1],[61.0, 80, 'K', 1],[101.0, 80, 'K', 2],[160.0, 65, 'K', 3],[168.0, 65, 'K', 4]

FeAs
###Strong and nonmonotonic temperature dependence of Hall coefficient in superconducting K$_x$Fe$_{2-y}$Se$_2$ single crystals|Xiaxin Ding,Yiming Pan,Huan Yang,Hai-Hu Wen###
(1430942, 1430943)
Measurements of the Hall coefficient reveal a strong but non-monotonictemperature dependence with a maximum at about 80 K, in contrast to any otherFeAs-based superconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 80, 'K', 1],[54.0, 80, 'K', 1],[14.0, 80, 'K', 0],[44.0, 65, 'K', 1],[52.0, 65, 'K', 2]

K
###Strong and nonmonotonic temperature dependence of Hall coefficient in superconducting K$_x$Fe$_{2-y}$Se$_2$ single crystals|Xiaxin Ding,Yiming Pan,Huan Yang,Hai-Hu Wen###
(1431118, 1431118)
 These results call for a refined theoretical understanding,especially when the hole pockets are absent or become trivial inKx<missing VAR>Fe2-ySe2 superconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[240.0, 80, 'K', 5],[230.0, 80, 'K', 5],[190.0, 80, 'K', 4],[131.0, 65, 'K', 3],[123.0, 65, 'K', 2]

Fe2-ySe2
###Strong and nonmonotonic temperature dependence of Hall coefficient in superconducting K$_x$Fe$_{2-y}$Se$_2$ single crystals|Xiaxin Ding,Yiming Pan,Huan Yang,Hai-Hu Wen###
(1431120, 1431125)
 These results call for a refined theoretical understanding,especially when the hole pockets are absent or become trivial inKx<missing VAR>Fe2-ySe2 superconductors.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[242.0, 80, 'K', 5],[232.0, 80, 'K', 5],[192.0, 80, 'K', 4],[133.0, 65, 'K', 3],[125.0, 65, 'K', 2]

In
###Optical evidence of quantum rotor orbital excitations in orthorhombic manganites|N. N. Kovaleva,K. I. Kugel,Z. Potucek,N. S. Goryachev,O. E. Kusmartseva,Z. Bryknar,V. A. Trepakov,E. I. Demikhov,A. Dejneka,F. V. Kusmartsev,A. M. Stoneham###
(1431159, 1431159)
 In magnetic compounds with Jahn-Teller (JT) ions (such as Mn3 or Cu2), theordering of the electron or hole orbitals is associated with cooperativelattice distortions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn3
###Optical evidence of quantum rotor orbital excitations in orthorhombic manganites|N. N. Kovaleva,K. I. Kugel,Z. Potucek,N. S. Goryachev,O. E. Kusmartseva,Z. Bryknar,V. A. Trepakov,E. I. Demikhov,A. Dejneka,F. V. Kusmartsev,A. M. Stoneham###
(1431183, 1431184)
 In magnetic compounds with Jahn-Teller (JT) ions (such as Mn3 or Cu2), theordering of the electron or hole orbitals is associated with cooperativelattice distortions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu2
###Optical evidence of quantum rotor orbital excitations in orthorhombic manganites|N. N. Kovaleva,K. I. Kugel,Z. Potucek,N. S. Goryachev,O. E. Kusmartseva,Z. Bryknar,V. A. Trepakov,E. I. Demikhov,A. Dejneka,F. V. Kusmartsev,A. M. Stoneham###
(1431188, 1431189)
 In magnetic compounds with Jahn-Teller (JT) ions (such as Mn3 or Cu2), theordering of the electron or hole orbitals is associated with cooperativelattice distortions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaMnO3
###Optical evidence of quantum rotor orbital excitations in orthorhombic manganites|N. N. Kovaleva,K. I. Kugel,Z. Potucek,N. S. Goryachev,O. E. Kusmartseva,Z. Bryknar,V. A. Trepakov,E. I. Demikhov,A. Dejneka,F. V. Kusmartsev,A. M. Stoneham###
(1431369, 1431372)
 We observed features originating fromthese excitations in the optical spectra of a model compound LaMnO3 usingellipsometry technique.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn3
###Optical evidence of quantum rotor orbital excitations in orthorhombic manganites|N. N. Kovaleva,K. I. Kugel,Z. Potucek,N. S. Goryachev,O. E. Kusmartseva,Z. Bryknar,V. A. Trepakov,E. I. Demikhov,A. Dejneka,F. V. Kusmartsev,A. M. Stoneham###
(1431418, 1431419)
 They appear clearly as narrow sidebands accompanyingthe electron transition between the JT split orbitals on neighbouring Mn3ions, strongly influenced by anisotropic spin correlations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaMnO3
###Optical evidence of quantum rotor orbital excitations in orthorhombic manganites|N. N. Kovaleva,K. I. Kugel,Z. Potucek,N. S. Goryachev,O. E. Kusmartseva,Z. Bryknar,V. A. Trepakov,E. I. Demikhov,A. Dejneka,F. V. Kusmartsev,A. M. Stoneham###
(1431472, 1431475)
 We present theseresults together with new experimental data on photoluminescence and itskinetics found in LaMnO3, which lend additional support to the ellipsometryimplying the existence of the quantum rotor orbital excitations.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Comparison between thermal and current driven spin-transfer torque in nanopillar metallic spin valves|J. Flipse,F. K. Dejene,B. J. van Wees###
(1431659, 1431659)
 We investigate the relation between thermal spin-transfer torque (TSTT) andthe spin-dependent Seebeck effect (SDSE), which produces a spin current when atemperature gradient is applied across a metallic ferromagnet, in nanopillarmetallic spin valves.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[194.0, 230, 'K', 2],[289.0, 10, '%', 4]

S
###Comparison between thermal and current driven spin-transfer torque in nanopillar metallic spin valves|J. Flipse,F. K. Dejene,B. J. van Wees###
(1431720, 1431720)
 Comparing its angular dependence (aSDSE) with the angledependent magnetoresistance (aMR) measurements on the same device, we are ableto verify that a small spin heat accumulation builds up in our devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 230, 'K', 1],[228.0, 10, '%', 3]

S
###Comparison between thermal and current driven spin-transfer torque in nanopillar metallic spin valves|J. Flipse,F. K. Dejene,B. J. van Wees###
(1431793, 1431793)
 Fromthe SDSE measurement and the observed current driven STT switching current of0.8 m<missing VAR>A in our spin valve devices, it was estimated that a temperaturedifference of 230 K is needed to produce an equal amount of TSTT.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 230, 'K', 0],[155.0, 10, '%', 2]

S
###Comparison between thermal and current driven spin-transfer torque in nanopillar metallic spin valves|J. Flipse,F. K. Dejene,B. J. van Wees###
(1431810, 1431810)
 Fromthe SDSE measurement and the observed current driven STT switching current of0.8 m<missing VAR>A in our spin valve devices, it was estimated that a temperaturedifference of 230 K is needed to produce an equal amount of TSTT.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 230, 'K', 0],[138.0, 10, '%', 2]

S
###Comparison between thermal and current driven spin-transfer torque in nanopillar metallic spin valves|J. Flipse,F. K. Dejene,B. J. van Wees###
(1431933, 1431933)
 Comparing it to the current driven STTexperiments we estimate that only 10% of the response is due to TSTT.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 230, 'K', 2],[15.0, 10, '%', 0]

S
###Comparison between thermal and current driven spin-transfer torque in nanopillar metallic spin valves|J. Flipse,F. K. Dejene,B. J. van Wees###
(1432041, 1432041)
Nevertheless the combined effect of heating, STT and TSTT could prove usefulfor inducing magnetization switching when further investigated and optimized.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 230, 'K', 4],[93.0, 10, '%', 2]

B20
###Magnetic, thermodynamic, and electrical transport properties of the noncentrosymmetric B20 germanides MnGe and CoGe|J. F. DiTusa,S. B. Zhang,K. Yamaura,Y. Xiong,J. C. Prestigiacomo,B. W. Fulfer,P. W. Adams,M. I. Brickson,D. A. Browne,C. Capan,Z. Fisk,Julia Y. Chan###
(1432106, 1432107)
Magnetic, thermodynamic, and electrical transport properties of the noncentrosymmetric B20 germanides MnGe and CoGe.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[281.0, 5, 'kOe', 4]

MnGe
###Magnetic, thermodynamic, and electrical transport properties of the noncentrosymmetric B20 germanides MnGe and CoGe|J. F. DiTusa,S. B. Zhang,K. Yamaura,Y. Xiong,J. C. Prestigiacomo,B. W. Fulfer,P. W. Adams,M. I. Brickson,D. A. Browne,C. Capan,Z. Fisk,Julia Y. Chan###
(1432111, 1432112)
Magnetic, thermodynamic, and electrical transport properties of the noncentrosymmetric B20 germanides MnGe and CoGe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[276.0, 5, 'kOe', 4]

CoGe
###Magnetic, thermodynamic, and electrical transport properties of the noncentrosymmetric B20 germanides MnGe and CoGe|J. F. DiTusa,S. B. Zhang,K. Yamaura,Y. Xiong,J. C. Prestigiacomo,B. W. Fulfer,P. W. Adams,M. I. Brickson,D. A. Browne,C. Capan,Z. Fisk,Julia Y. Chan###
(1432116, 1432117)
Magnetic, thermodynamic, and electrical transport properties of the noncentrosymmetric B20 germanides MnGe and CoGe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[271.0, 5, 'kOe', 4]

B20
###Magnetic, thermodynamic, and electrical transport properties of the noncentrosymmetric B20 germanides MnGe and CoGe|J. F. DiTusa,S. B. Zhang,K. Yamaura,Y. Xiong,J. C. Prestigiacomo,B. W. Fulfer,P. W. Adams,M. I. Brickson,D. A. Browne,C. Capan,Z. Fisk,Julia Y. Chan###
(1432150, 1432151)
 We present magnetization, specific heat, resistivity, and Hall effectmeasurements on the cubic B20 phase of MnGe and CoGe and compare tomeasurements of isostructural FeGe and electronic structure calculations.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[237.0, 5, 'kOe', 3]

MnGe
###Magnetic, thermodynamic, and electrical transport properties of the noncentrosymmetric B20 germanides MnGe and CoGe|J. F. DiTusa,S. B. Zhang,K. Yamaura,Y. Xiong,J. C. Prestigiacomo,B. W. Fulfer,P. W. Adams,M. I. Brickson,D. A. Browne,C. Capan,Z. Fisk,Julia Y. Chan###
(1432157, 1432158)
 We present magnetization, specific heat, resistivity, and Hall effectmeasurements on the cubic B20 phase of MnGe and CoGe and compare tomeasurements of isostructural FeGe and electronic structure calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[230.0, 5, 'kOe', 3]

CoGe
###Magnetic, thermodynamic, and electrical transport properties of the noncentrosymmetric B20 germanides MnGe and CoGe|J. F. DiTusa,S. B. Zhang,K. Yamaura,Y. Xiong,J. C. Prestigiacomo,B. W. Fulfer,P. W. Adams,M. I. Brickson,D. A. Browne,C. Capan,Z. Fisk,Julia Y. Chan###
(1432162, 1432163)
 We present magnetization, specific heat, resistivity, and Hall effectmeasurements on the cubic B20 phase of MnGe and CoGe and compare tomeasurements of isostructural FeGe and electronic structure calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[225.0, 5, 'kOe', 3]

FeGe
###Magnetic, thermodynamic, and electrical transport properties of the noncentrosymmetric B20 germanides MnGe and CoGe|J. F. DiTusa,S. B. Zhang,K. Yamaura,Y. Xiong,J. C. Prestigiacomo,B. W. Fulfer,P. W. Adams,M. I. Brickson,D. A. Browne,C. Capan,Z. Fisk,Julia Y. Chan###
(1432178, 1432179)
 We present magnetization, specific heat, resistivity, and Hall effectmeasurements on the cubic B20 phase of MnGe and CoGe and compare tomeasurements of isostructural FeGe and electronic structure calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[209.0, 5, 'kOe', 3]

In
###Magnetic, thermodynamic, and electrical transport properties of the noncentrosymmetric B20 germanides MnGe and CoGe|J. F. DiTusa,S. B. Zhang,K. Yamaura,Y. Xiong,J. C. Prestigiacomo,B. W. Fulfer,P. W. Adams,M. I. Brickson,D. A. Browne,C. Capan,Z. Fisk,Julia Y. Chan###
(1432190, 1432190)
 InMnGe, we observe a transition to a magnetic state at Tc275 K as identifiedby a sharp peak in the ac magnetic susceptibility, as well as second phasetransition at lower temperature that becomes apparent only at finite magneticfield.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[198.0, 5, 'kOe', 2]

MnGe
###Magnetic, thermodynamic, and electrical transport properties of the noncentrosymmetric B20 germanides MnGe and CoGe|J. F. DiTusa,S. B. Zhang,K. Yamaura,Y. Xiong,J. C. Prestigiacomo,B. W. Fulfer,P. W. Adams,M. I. Brickson,D. A. Browne,C. Capan,Z. Fisk,Julia Y. Chan###
(1432193, 1432194)
 InMnGe, we observe a transition to a magnetic state at Tc275 K as identifiedby a sharp peak in the ac magnetic susceptibility, as well as second phasetransition at lower temperature that becomes apparent only at finite magneticfield.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[194.0, 5, 'kOe', 2]

K
###Magnetic, thermodynamic, and electrical transport properties of the noncentrosymmetric B20 germanides MnGe and CoGe|J. F. DiTusa,S. B. Zhang,K. Yamaura,Y. Xiong,J. C. Prestigiacomo,B. W. Fulfer,P. W. Adams,M. I. Brickson,D. A. Browne,C. Capan,Z. Fisk,Julia Y. Chan###
(1432219, 1432219)
 InMnGe, we observe a transition to a magnetic state at Tc275 K as identifiedby a sharp peak in the ac magnetic susceptibility, as well as second phasetransition at lower temperature that becomes apparent only at finite magneticfield.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 5, 'kOe', 2]

MnGe
###Magnetic, thermodynamic, and electrical transport properties of the noncentrosymmetric B20 germanides MnGe and CoGe|J. F. DiTusa,S. B. Zhang,K. Yamaura,Y. Xiong,J. C. Prestigiacomo,B. W. Fulfer,P. W. Adams,M. I. Brickson,D. A. Browne,C. Capan,Z. Fisk,Julia Y. Chan###
(1432454, 1432455)
 Transport measurements indicate that MnGe ismetal with a negative magnetoresistance similar to that seen in isostructuralFeGe and MnSi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 5, 'kOe', 2]

FeGe
###Magnetic, thermodynamic, and electrical transport properties of the noncentrosymmetric B20 germanides MnGe and CoGe|J. F. DiTusa,S. B. Zhang,K. Yamaura,Y. Xiong,J. C. Prestigiacomo,B. W. Fulfer,P. W. Adams,M. I. Brickson,D. A. Browne,C. Capan,Z. Fisk,Julia Y. Chan###
(1432483, 1432484)
 Transport measurements indicate that MnGe ismetal with a negative magnetoresistance similar to that seen in isostructuralFeGe and MnSi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 5, 'kOe', 2]

MnSi
###Magnetic, thermodynamic, and electrical transport properties of the noncentrosymmetric B20 germanides MnGe and CoGe|J. F. DiTusa,S. B. Zhang,K. Yamaura,Y. Xiong,J. C. Prestigiacomo,B. W. Fulfer,P. W. Adams,M. I. Brickson,D. A. Browne,C. Capan,Z. Fisk,Julia Y. Chan###
(1432488, 1432489)
 Transport measurements indicate that MnGe ismetal with a negative magnetoresistance similar to that seen in isostructuralFeGe and MnSi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 5, 'kOe', 2]

FeGe
###Magnetic, thermodynamic, and electrical transport properties of the noncentrosymmetric B20 germanides MnGe and CoGe|J. F. DiTusa,S. B. Zhang,K. Yamaura,Y. Xiong,J. C. Prestigiacomo,B. W. Fulfer,P. W. Adams,M. I. Brickson,D. A. Browne,C. Capan,Z. Fisk,Julia Y. Chan###
(1432533, 1432534)
 Hall effect measurements reveal a carrier concentration of about0.5 carriers per formula unit also similar to that found in FeGe and MnSi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 5, 'kOe', 3]

MnSi
###Magnetic, thermodynamic, and electrical transport properties of the noncentrosymmetric B20 germanides MnGe and CoGe|J. F. DiTusa,S. B. Zhang,K. Yamaura,Y. Xiong,J. C. Prestigiacomo,B. W. Fulfer,P. W. Adams,M. I. Brickson,D. A. Browne,C. Capan,Z. Fisk,Julia Y. Chan###
(1432538, 1432539)
 Hall effect measurements reveal a carrier concentration of about0.5 carriers per formula unit also similar to that found in FeGe and MnSi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 5, 'kOe', 3]

CoGe
###Magnetic, thermodynamic, and electrical transport properties of the noncentrosymmetric B20 germanides MnGe and CoGe|J. F. DiTusa,S. B. Zhang,K. Yamaura,Y. Xiong,J. C. Prestigiacomo,B. W. Fulfer,P. W. Adams,M. I. Brickson,D. A. Browne,C. Capan,Z. Fisk,Julia Y. Chan###
(1432542, 1432543)
 CoGeis shown to be a low carrier density metal with a very small, nearlytemperature independent diamagnetic susceptibility.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 5, 'kOe', 4]

Bi2Se3
###Tunneling magnetoresistance devices based on topological insulators: Ferromagnet/insulator/topological-insulator junctions employing Bi$_{2}$Se$_{3}$|Matthias Götte,Tomi Paananen,Günter Reiss,Thomas Dahm###
(1432619, 1432622)
Tunneling magnetoresistance devices based on topological insulators Ferromagnet/insulator/topological-insulator junctions employing Bi2Se3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[209.0, 1000, '%', 4]

Bi2Se3
###Tunneling magnetoresistance devices based on topological insulators: Ferromagnet/insulator/topological-insulator junctions employing Bi$_{2}$Se$_{3}$|Matthias Götte,Tomi Paananen,Günter Reiss,Thomas Dahm###
(1432680, 1432683)
 We theoretically investigate tunneling magnetoresistance (TMR) devices, whichare probing the spin-momentum coupled nature of surface states of thethree-dimensional topological insulator Bi2Se3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 1000, '%', 3]

Bi2Se3
###Tunneling magnetoresistance devices based on topological insulators: Ferromagnet/insulator/topological-insulator junctions employing Bi$_{2}$Se$_{3}$|Matthias Götte,Tomi Paananen,Günter Reiss,Thomas Dahm###
(1432712, 1432715)
 Theoreticalcalculations are performed based on a realistic tight-binding model forBi2Se3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 1000, '%', 2]

Bi2Se3
###Tunneling magnetoresistance devices based on topological insulators: Ferromagnet/insulator/topological-insulator junctions employing Bi$_{2}$Se$_{3}$|Matthias Götte,Tomi Paananen,Günter Reiss,Thomas Dahm###
(1432744, 1432747)
 We study both three dimensional devices, which exploit thesurface states of Bi2Se3, as well as two-dimensional devices, whichexploit the edge states of thin Bi2Se3 strips.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 1000, '%', 1]

Bi2Se3
###Tunneling magnetoresistance devices based on topological insulators: Ferromagnet/insulator/topological-insulator junctions employing Bi$_{2}$Se$_{3}$|Matthias Götte,Tomi Paananen,Günter Reiss,Thomas Dahm###
(1432778, 1432781)
 We study both three dimensional devices, which exploit thesurface states of Bi2Se3, as well as two-dimensional devices, whichexploit the edge states of thin Bi2Se3 strips.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 1000, '%', 1]

Bi2Se3
###Tunneling magnetoresistance devices based on topological insulators: Ferromagnet/insulator/topological-insulator junctions employing Bi$_{2}$Se$_{3}$|Matthias Götte,Tomi Paananen,Günter Reiss,Thomas Dahm###
(1432801, 1432804)
 We demonstrate thatthe material properties of Bi2Se3 allow a TMR ratio at roomtemperature of the order of 1000%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 1000, '%', 0]

S
###Tunneling magnetoresistance devices based on topological insulators: Ferromagnet/insulator/topological-insulator junctions employing Bi$_{2}$Se$_{3}$|Matthias Götte,Tomi Paananen,Günter Reiss,Thomas Dahm###
(1432919, 1432919)
 The devices can beused to measure the spin polarization of the topological surface states as analternative to spin-ARPES.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 1000, '%', 2]

Bi2Te3
###Thermoelectric and galvanomagnetic properties of bismuth chalcogenide nanostructured hetero-epitaxial films|L. N. Lukyanova,Yu. A. Boikov,V A Danilov,O A Usov,M P Volkov,V. A. Kutasov###
(1433032, 1433035)
 Hot wall technique was used to grow block single crystal films of Bi2Te3and solid solutions of Bi(0.5)Sb(1.5)Te3 on mica (muscovite) substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 14, 'T', 2]

Te3
###Thermoelectric and galvanomagnetic properties of bismuth chalcogenide nanostructured hetero-epitaxial films|L. N. Lukyanova,Yu. A. Boikov,V A Danilov,O A Usov,M P Volkov,V. A. Kutasov###
(1433054, 1433055)
 Hot wall technique was used to grow block single crystal films of Bi2Te3and solid solutions of Bi(0.5)Sb(1.5)Te3 on mica (muscovite) substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 14, 'T', 2]

K
###Thermoelectric and galvanomagnetic properties of bismuth chalcogenide nanostructured hetero-epitaxial films|L. N. Lukyanova,Yu. A. Boikov,V A Danilov,O A Usov,M P Volkov,V. A. Kutasov###
(1433160, 1433160)
 Seebeck coefficient, electrical conductivityand magnetoresistivity tensor components were measured at various orientationsof magnetic and electric fields in the temperature interval 77-300 K andmagnetic field up to 14 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 14, 'T', 0]

YB6
###High pressure effect on superconductivity of YB6|S. Gabáni,I. Takáčová,G. Pristáš,E. Gažo,K. Flachbart,T. Mori,D. Braithwaite,M. Míšek,K. V. Kamenev,M. Hanfland,P. Samuely###
(1433390, 1433392)
High pressure effect on superconductivity of YB6.
Featurization terminated normally.
0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 7.5, 'K', 1],[88.0, 60, 'mK', 2],[95.0, 47, 'kbar', 2],[146.0, -0.59, '%', 2],[161.0, -1.1, '%', 2],[205.0, 3, 'times', 3],[238.0, 14, '%', 4],[242.0, 320, 'kbar', 4],[394.0, 300, 'K', 7],[405.0, 28, 'kbar', 7]

YB6
###High pressure effect on superconductivity of YB6|S. Gabáni,I. Takáčová,G. Pristáš,E. Gažo,K. Flachbart,T. Mori,D. Braithwaite,M. Míšek,K. V. Kamenev,M. Hanfland,P. Samuely###
(1433409, 1433411)
 Pressure effect on superconducting properties of two YB6 samples (Tc  5.9and 7.5 K) were investigated by measurements of electrical resistivity,magnetic susceptibility, and X<missing VAR>-ray diffraction in the pressure range up to 320kbar.
Featurization terminated normally.
0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 7.5, 'K', 0],[69.0, 60, 'mK', 1],[76.0, 47, 'kbar', 1],[127.0, -0.59, '%', 1],[142.0, -1.1, '%', 1],[186.0, 3, 'times', 2],[219.0, 14, '%', 3],[223.0, 320, 'kbar', 3],[375.0, 300, 'K', 6],[386.0, 28, 'kbar', 6]

Tc
###High pressure effect on superconductivity of YB6|S. Gabáni,I. Takáčová,G. Pristáš,E. Gažo,K. Flachbart,T. Mori,D. Braithwaite,M. Míšek,K. V. Kamenev,M. Hanfland,P. Samuely###
(1433416, 1433416)
 Pressure effect on superconducting properties of two YB6 samples (Tc  5.9and 7.5 K) were investigated by measurements of electrical resistivity,magnetic susceptibility, and X<missing VAR>-ray diffraction in the pressure range up to 320kbar.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 7.5, 'K', 0],[64.0, 60, 'mK', 1],[71.0, 47, 'kbar', 1],[122.0, -0.59, '%', 1],[137.0, -1.1, '%', 1],[181.0, 3, 'times', 2],[214.0, 14, '%', 3],[218.0, 320, 'kbar', 3],[370.0, 300, 'K', 6],[381.0, 28, 'kbar', 6]

Tc
###High pressure effect on superconductivity of YB6|S. Gabáni,I. Takáčová,G. Pristáš,E. Gažo,K. Flachbart,T. Mori,D. Braithwaite,M. Míšek,K. V. Kamenev,M. Hanfland,P. Samuely###
(1433504, 1433504)
 Magnetoresistivity measurements down to 60 mK and up to 47 kbar haveshown a negative pressure effect on Tc as well as on the third critical fieldHc3 with the slopes dlnTc/dp  -0.59%/kbar and dlnHc3/dp  -1.1%/kbar,respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 7.5, 'K', 1],[24.0, 60, 'mK', 0],[17.0, 47, 'kbar', 0],[34.0, -0.59, '%', 0],[49.0, -1.1, '%', 0],[93.0, 3, 'times', 1],[126.0, 14, '%', 2],[130.0, 320, 'kbar', 2],[282.0, 300, 'K', 5],[293.0, 28, 'kbar', 5]

Tc
###High pressure effect on superconductivity of YB6|S. Gabáni,I. Takáčová,G. Pristáš,E. Gažo,K. Flachbart,T. Mori,D. Braithwaite,M. Míšek,K. V. Kamenev,M. Hanfland,P. Samuely###
(1433533, 1433533)
 Magnetoresistivity measurements down to 60 mK and up to 47 kbar haveshown a negative pressure effect on Tc as well as on the third critical fieldHc3 with the slopes dlnTc/dp  -0.59%/kbar and dlnHc3/dp  -1.1%/kbar,respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 7.5, 'K', 1],[53.0, 60, 'mK', 0],[46.0, 47, 'kbar', 0],[5.0, -0.59, '%', 0],[20.0, -1.1, '%', 0],[64.0, 3, 'times', 1],[97.0, 14, '%', 2],[101.0, 320, 'kbar', 2],[253.0, 300, 'K', 5],[264.0, 28, 'kbar', 5]

Tc
###High pressure effect on superconductivity of YB6|S. Gabáni,I. Takáčová,G. Pristáš,E. Gažo,K. Flachbart,T. Mori,D. Braithwaite,M. Míšek,K. V. Kamenev,M. Hanfland,P. Samuely###
(1433584, 1433584)
 The magnetic susceptibility measurements evidenced that the slopeof dlnTc/dp gradually decreases with pressure reaching 3 times smaller value at112 kbar.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 7.5, 'K', 2],[104.0, 60, 'mK', 1],[97.0, 47, 'kbar', 1],[46.0, -0.59, '%', 1],[31.0, -1.1, '%', 1],[13.0, 3, 'times', 0],[46.0, 14, '%', 1],[50.0, 320, 'kbar', 1],[202.0, 300, 'K', 4],[213.0, 28, 'kbar', 4]

Tc
###High pressure effect on superconductivity of YB6|S. Gabáni,I. Takáčová,G. Pristáš,E. Gažo,K. Flachbart,T. Mori,D. Braithwaite,M. Míšek,K. V. Kamenev,M. Hanfland,P. Samuely###
(1433676, 1433676)
 The obtained relative volume dependence dlnTc/dlnV analyzedby the McMillan formula for Tc indicates that the reduction of thesuperconducting transition temperature is mainly due to hardening of theEinstein-like phonon mode responsible for the superconducting coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[253.0, 7.5, 'K', 5],[196.0, 60, 'mK', 4],[189.0, 47, 'kbar', 4],[138.0, -0.59, '%', 4],[123.0, -1.1, '%', 4],[79.0, 3, 'times', 3],[46.0, 14, '%', 2],[42.0, 320, 'kbar', 2],[110.0, 300, 'K', 1],[121.0, 28, 'kbar', 1]

V
###High pressure effect on superconductivity of YB6|S. Gabáni,I. Takáčová,G. Pristáš,E. Gažo,K. Flachbart,T. Mori,D. Braithwaite,M. Míšek,K. V. Kamenev,M. Hanfland,P. Samuely###
(1433679, 1433679)
 The obtained relative volume dependence dlnTc/dlnV analyzedby the McMillan formula for Tc indicates that the reduction of thesuperconducting transition temperature is mainly due to hardening of theEinstein-like phonon mode responsible for the superconducting coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[256.0, 7.5, 'K', 5],[199.0, 60, 'mK', 4],[192.0, 47, 'kbar', 4],[141.0, -0.59, '%', 4],[126.0, -1.1, '%', 4],[82.0, 3, 'times', 3],[49.0, 14, '%', 2],[45.0, 320, 'kbar', 2],[107.0, 300, 'K', 1],[118.0, 28, 'kbar', 1]

Tc
###High pressure effect on superconductivity of YB6|S. Gabáni,I. Takáčová,G. Pristáš,E. Gažo,K. Flachbart,T. Mori,D. Braithwaite,M. Míšek,K. V. Kamenev,M. Hanfland,P. Samuely###
(1433695, 1433695)
 The obtained relative volume dependence dlnTc/dlnV analyzedby the McMillan formula for Tc indicates that the reduction of thesuperconducting transition temperature is mainly due to hardening of theEinstein-like phonon mode responsible for the superconducting coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[272.0, 7.5, 'K', 5],[215.0, 60, 'mK', 4],[208.0, 47, 'kbar', 4],[157.0, -0.59, '%', 4],[142.0, -1.1, '%', 4],[98.0, 3, 'times', 3],[65.0, 14, '%', 2],[61.0, 320, 'kbar', 2],[91.0, 300, 'K', 1],[102.0, 28, 'kbar', 1]

EuO
###Direct epitaxial integration of the ferromagnetic semiconductor EuO with silicon for spintronic applications|Dmitry V. Averyanov,Peter E. Teterin,Yuri G. Sadofyev,Andrey M. Tokmachev,Alexey E. Primenko,Igor A. Likhachev,Vyacheslav G. Storchak###
(1433822, 1433823)
Direct epitaxial integration of the ferromagnetic semiconductor EuO with silicon for spintronic applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Direct epitaxial integration of the ferromagnetic semiconductor EuO with silicon for spintronic applications|Dmitry V. Averyanov,Peter E. Teterin,Yuri G. Sadofyev,Andrey M. Tokmachev,Alexey E. Primenko,Igor A. Likhachev,Vyacheslav G. Storchak###
(1434036, 1434036)
 One of the most important prerequisites for such a technology isan effective injection of spin-polarized carriers from a ferromagneticsemiconductor into a nonmagnetic semiconductor, preferably one of thosecurrently used for industrial applications such as Si - a workhorse of modernelectronics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuO
###Direct epitaxial integration of the ferromagnetic semiconductor EuO with silicon for spintronic applications|Dmitry V. Averyanov,Peter E. Teterin,Yuri G. Sadofyev,Andrey M. Tokmachev,Alexey E. Primenko,Igor A. Likhachev,Vyacheslav G. Storchak###
(1434056, 1434057)
 Ferromagnetic semiconductor EuO is long believed to be the bestcandidate for integration of magnetic semiconductor with Si.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Direct epitaxial integration of the ferromagnetic semiconductor EuO with silicon for spintronic applications|Dmitry V. Averyanov,Peter E. Teterin,Yuri G. Sadofyev,Andrey M. Tokmachev,Alexey E. Primenko,Igor A. Likhachev,Vyacheslav G. Storchak###
(1434088, 1434088)
 Ferromagnetic semiconductor EuO is long believed to be the bestcandidate for integration of magnetic semiconductor with Si.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuO
###Direct epitaxial integration of the ferromagnetic semiconductor EuO with silicon for spintronic applications|Dmitry V. Averyanov,Peter E. Teterin,Yuri G. Sadofyev,Andrey M. Tokmachev,Alexey E. Primenko,Igor A. Likhachev,Vyacheslav G. Storchak###
(1434093, 1434094)
 Although EuOproved to offer optimal conditions for effective spin injection into siliconand in spite of considerable efforts, the direct epitaxial stabilization ofstoichiometric EuO thin films on Si without any buffer layer has not beendemonstrated to date.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuO
###Direct epitaxial integration of the ferromagnetic semiconductor EuO with silicon for spintronic applications|Dmitry V. Averyanov,Peter E. Teterin,Yuri G. Sadofyev,Andrey M. Tokmachev,Alexey E. Primenko,Igor A. Likhachev,Vyacheslav G. Storchak###
(1434146, 1434147)
 Although EuOproved to offer optimal conditions for effective spin injection into siliconand in spite of considerable efforts, the direct epitaxial stabilization ofstoichiometric EuO thin films on Si without any buffer layer has not beendemonstrated to date.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Direct epitaxial integration of the ferromagnetic semiconductor EuO with silicon for spintronic applications|Dmitry V. Averyanov,Peter E. Teterin,Yuri G. Sadofyev,Andrey M. Tokmachev,Alexey E. Primenko,Igor A. Likhachev,Vyacheslav G. Storchak###
(1434155, 1434155)
 Although EuOproved to offer optimal conditions for effective spin injection into siliconand in spite of considerable efforts, the direct epitaxial stabilization ofstoichiometric EuO thin films on Si without any buffer layer has not beendemonstrated to date.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuO/Si
###Direct epitaxial integration of the ferromagnetic semiconductor EuO with silicon for spintronic applications|Dmitry V. Averyanov,Peter E. Teterin,Yuri G. Sadofyev,Andrey M. Tokmachev,Alexey E. Primenko,Igor A. Likhachev,Vyacheslav G. Storchak###
(1434197, 1434200)
 Here we report a new technique for control of EuO/Siinterface on submonolayer level which may have general implications for thegrowth of functional oxides on Si.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Si
###Direct epitaxial integration of the ferromagnetic semiconductor EuO with silicon for spintronic applications|Dmitry V. Averyanov,Peter E. Teterin,Yuri G. Sadofyev,Andrey M. Tokmachev,Alexey E. Primenko,Igor A. Likhachev,Vyacheslav G. Storchak###
(1434236, 1434236)
 Here we report a new technique for control of EuO/Siinterface on submonolayer level which may have general implications for thegrowth of functional oxides on Si.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuO
###Direct epitaxial integration of the ferromagnetic semiconductor EuO with silicon for spintronic applications|Dmitry V. Averyanov,Peter E. Teterin,Yuri G. Sadofyev,Andrey M. Tokmachev,Alexey E. Primenko,Igor A. Likhachev,Vyacheslav G. Storchak###
(1434274, 1434275)
 Using this technique we solve along-standing problem of direct epitaxial growth on silicon of thin EuO filmswhich exhibit structural and magnetic properties of EuO bulk material.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuO
###Direct epitaxial integration of the ferromagnetic semiconductor EuO with silicon for spintronic applications|Dmitry V. Averyanov,Peter E. Teterin,Yuri G. Sadofyev,Andrey M. Tokmachev,Alexey E. Primenko,Igor A. Likhachev,Vyacheslav G. Storchak###
(1434294, 1434295)
 Using this technique we solve along-standing problem of direct epitaxial growth on silicon of thin EuO filmswhich exhibit structural and magnetic properties of EuO bulk material.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

URhGe
###Fermi Surface Instabilities in Ferromagnetic Superconductor URhGe|Dai Aoki,Georg Knebel,Jacques Flouquet###
(1434349, 1434351)
Fermi Surface Instabilities in Ferromagnetic Superconductor URhGe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[409.0, 0.4, 'K', 7],[413.0, 0.4, 'K', 8]

In
###Fermi Surface Instabilities in Ferromagnetic Superconductor URhGe|Dai Aoki,Georg Knebel,Jacques Flouquet###
(1434484, 1434484)
 In order tostudy the Fermi surface instability, we performed Hall effect measurements inthe ferromagnetic superconductor URhGe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[276.0, 0.4, 'K', 3],[280.0, 0.4, 'K', 4]

URhGe
###Fermi Surface Instabilities in Ferromagnetic Superconductor URhGe|Dai Aoki,Georg Knebel,Jacques Flouquet###
(1434521, 1434523)
 In order tostudy the Fermi surface instability, we performed Hall effect measurements inthe ferromagnetic superconductor URhGe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[237.0, 0.4, 'K', 3],[241.0, 0.4, 'K', 4]

URhGe
###Fermi Surface Instabilities in Ferromagnetic Superconductor URhGe|Dai Aoki,Georg Knebel,Jacques Flouquet###
(1434534, 1434536)
 The Hall effect of URhGe is wellexplained by two contributions, namely by the normal Hall effect and by thelarge anomalous Hall effect due to skew scattering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[224.0, 0.4, 'K', 2],[228.0, 0.4, 'K', 3]

H
###Fermi Surface Instabilities in Ferromagnetic Superconductor URhGe|Dai Aoki,Georg Knebel,Jacques Flouquet###
(1434628, 1434628)
 The large change in theHall coefficient is observed at low fields between the paramagnetic andferromagnetic states for H // c<missing VAR>-axis (easy-magnetization axis) in theorthorhombic structure, indicating that the Fermi surface is reconstructed inthe ferromagnetic state below the Curie temperature (T<missing VAR>Curie9.5K).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 0.4, 'K', 1],[136.0, 0.4, 'K', 2]

K
###Fermi Surface Instabilities in Ferromagnetic Superconductor URhGe|Dai Aoki,Georg Knebel,Jacques Flouquet###
(1434690, 1434690)
 The large change in theHall coefficient is observed at low fields between the paramagnetic andferromagnetic states for H // c<missing VAR>-axis (easy-magnetization axis) in theorthorhombic structure, indicating that the Fermi surface is reconstructed inthe ferromagnetic state below the Curie temperature (T<missing VAR>Curie9.5K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 0.4, 'K', 1],[74.0, 0.4, 'K', 2]

At
###Fermi Surface Instabilities in Ferromagnetic Superconductor URhGe|Dai Aoki,Georg Knebel,Jacques Flouquet###
(1434694, 1434694)
 At lowtemperatures (T<missing VAR> << T<missing VAR>Curie), when the field is applied along the b<missing VAR>-axis, thereentrant superconductivity was observed in both the Hall resistivity and themagnetoresistance below 0.4K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 0.4, 'K', 0],[70.0, 0.4, 'K', 1]

H
###Fermi Surface Instabilities in Ferromagnetic Superconductor URhGe|Dai Aoki,Georg Knebel,Jacques Flouquet###
(1434806, 1434806)
 Above 0.4K, a large jump with the first-ordernature was detected in the Hall resistivity at a spin-reorientation field HR<missing VAR> 12.5T<missing VAR>, demonstrating that the marked change of the Fermi surface occurs betweenthe ferromagnetic state and the polarized state above HR<missing VAR>.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 0.4, 'K', 1],[42.0, 0.4, 'K', 0]

H
###Fermi Surface Instabilities in Ferromagnetic Superconductor URhGe|Dai Aoki,Georg Knebel,Jacques Flouquet###
(1434854, 1434854)
 Above 0.4K, a large jump with the first-ordernature was detected in the Hall resistivity at a spin-reorientation field HR<missing VAR> 12.5T<missing VAR>, demonstrating that the marked change of the Fermi surface occurs betweenthe ferromagnetic state and the polarized state above HR<missing VAR>.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 0.4, 'K', 1],[90.0, 0.4, 'K', 0]

Co2FeAl
###Tunnel magnetoresistance and spin-transfer-torque switching in polycrystalline Co2FeAl full-Heusler alloy magnetic tunnel junctions on Si/SiO2 amorphous substrates|Zhenchao Wen,Hiroaki Sukegawa,Shinya Kasai,Koichiro Inomata,Seiji Mitani###
(1434936, 1434939)
Tunnel magnetoresistance and spin-transfer-torque switching in polycrystalline Co2FeAl full-Heusler alloy magnetic tunnel junctions on Si/SiO2 amorphous substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 175, '%', 3],[296.0, 8.2, 'x', 5],[304.0, 2, ',', 5],[315.0, 2.9, 'x', 5],[323.0, 2, ',', 5],[353.0, 100, ',', 8]

Si/SiO2
###Tunnel magnetoresistance and spin-transfer-torque switching in polycrystalline Co2FeAl full-Heusler alloy magnetic tunnel junctions on Si/SiO2 amorphous substrates|Zhenchao Wen,Hiroaki Sukegawa,Shinya Kasai,Koichiro Inomata,Seiji Mitani###
(1434955, 1434959)
Tunnel magnetoresistance and spin-transfer-torque switching in polycrystalline Co2FeAl full-Heusler alloy magnetic tunnel junctions on Si/SiO2 amorphous substrates.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[141.0, 175, '%', 3],[276.0, 8.2, 'x', 5],[284.0, 2, ',', 5],[295.0, 2.9, 'x', 5],[303.0, 2, ',', 5],[333.0, 100, ',', 8]

B2
###Tunnel magnetoresistance and spin-transfer-torque switching in polycrystalline Co2FeAl full-Heusler alloy magnetic tunnel junctions on Si/SiO2 amorphous substrates|Zhenchao Wen,Hiroaki Sukegawa,Shinya Kasai,Koichiro Inomata,Seiji Mitani###
(1434972, 1434973)
 We studied polycrystalline B2-type Co2FeAl (CFA) full-Heusler alloy basedmagnetic tunnel junctions (MTJs) fabricated on a Si/SiO2 amorphous substrate.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 175, '%', 2],[262.0, 8.2, 'x', 4],[270.0, 2, ',', 4],[281.0, 2.9, 'x', 4],[289.0, 2, ',', 4],[319.0, 100, ',', 7]

Co2FeAl
###Tunnel magnetoresistance and spin-transfer-torque switching in polycrystalline Co2FeAl full-Heusler alloy magnetic tunnel junctions on Si/SiO2 amorphous substrates|Zhenchao Wen,Hiroaki Sukegawa,Shinya Kasai,Koichiro Inomata,Seiji Mitani###
(1434977, 1434980)
 We studied polycrystalline B2-type Co2FeAl (CFA) full-Heusler alloy basedmagnetic tunnel junctions (MTJs) fabricated on a Si/SiO2 amorphous substrate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 175, '%', 2],[255.0, 8.2, 'x', 4],[263.0, 2, ',', 4],[274.0, 2.9, 'x', 4],[282.0, 2, ',', 4],[312.0, 100, ',', 7]

CF
###Tunnel magnetoresistance and spin-transfer-torque switching in polycrystalline Co2FeAl full-Heusler alloy magnetic tunnel junctions on Si/SiO2 amorphous substrates|Zhenchao Wen,Hiroaki Sukegawa,Shinya Kasai,Koichiro Inomata,Seiji Mitani###
(1434983, 1434984)
 We studied polycrystalline B2-type Co2FeAl (CFA) full-Heusler alloy basedmagnetic tunnel junctions (MTJs) fabricated on a Si/SiO2 amorphous substrate.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 175, '%', 2],[251.0, 8.2, 'x', 4],[259.0, 2, ',', 4],[270.0, 2.9, 'x', 4],[278.0, 2, ',', 4],[308.0, 100, ',', 7]

Si/SiO2
###Tunnel magnetoresistance and spin-transfer-torque switching in polycrystalline Co2FeAl full-Heusler alloy magnetic tunnel junctions on Si/SiO2 amorphous substrates|Zhenchao Wen,Hiroaki Sukegawa,Shinya Kasai,Koichiro Inomata,Seiji Mitani###
(1435015, 1435019)
 We studied polycrystalline B2-type Co2FeAl (CFA) full-Heusler alloy basedmagnetic tunnel junctions (MTJs) fabricated on a Si/SiO2 amorphous substrate.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[81.0, 175, '%', 2],[216.0, 8.2, 'x', 4],[224.0, 2, ',', 4],[235.0, 2.9, 'x', 4],[243.0, 2, ',', 4],[273.0, 100, ',', 7]

CF
###Tunnel magnetoresistance and spin-transfer-torque switching in polycrystalline Co2FeAl full-Heusler alloy magnetic tunnel junctions on Si/SiO2 amorphous substrates|Zhenchao Wen,Hiroaki Sukegawa,Shinya Kasai,Koichiro Inomata,Seiji Mitani###
(1435029, 1435030)
Polycrystalline CFA films with a (001) orientation, a high B2 ordering, and aflat surface were achieved using a MgO buffer layer.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 175, '%', 1],[205.0, 8.2, 'x', 3],[213.0, 2, ',', 3],[224.0, 2.9, 'x', 3],[232.0, 2, ',', 3],[262.0, 100, ',', 6]

B2
###Tunnel magnetoresistance and spin-transfer-torque switching in polycrystalline Co2FeAl full-Heusler alloy magnetic tunnel junctions on Si/SiO2 amorphous substrates|Zhenchao Wen,Hiroaki Sukegawa,Shinya Kasai,Koichiro Inomata,Seiji Mitani###
(1435050, 1435051)
Polycrystalline CFA films with a (001) orientation, a high B2 ordering, and aflat surface were achieved using a MgO buffer layer.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 175, '%', 1],[184.0, 8.2, 'x', 3],[192.0, 2, ',', 3],[203.0, 2.9, 'x', 3],[211.0, 2, ',', 3],[241.0, 100, ',', 6]

MgO
###Tunnel magnetoresistance and spin-transfer-torque switching in polycrystalline Co2FeAl full-Heusler alloy magnetic tunnel junctions on Si/SiO2 amorphous substrates|Zhenchao Wen,Hiroaki Sukegawa,Shinya Kasai,Koichiro Inomata,Seiji Mitani###
(1435073, 1435074)
Polycrystalline CFA films with a (001) orientation, a high B2 ordering, and aflat surface were achieved using a MgO buffer layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 175, '%', 1],[161.0, 8.2, 'x', 3],[169.0, 2, ',', 3],[180.0, 2.9, 'x', 3],[188.0, 2, ',', 3],[218.0, 100, ',', 6]

CF
###Tunnel magnetoresistance and spin-transfer-torque switching in polycrystalline Co2FeAl full-Heusler alloy magnetic tunnel junctions on Si/SiO2 amorphous substrates|Zhenchao Wen,Hiroaki Sukegawa,Shinya Kasai,Koichiro Inomata,Seiji Mitani###
(1435119, 1435120)
 A tunnel magnetoresistance(TMR) ratio up to 175% was obtained for an MTJ with a CFA/MgO/CoFe structure ona 7.5-nm-thick MgO buffer.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 175, '%', 0],[115.0, 8.2, 'x', 2],[123.0, 2, ',', 2],[134.0, 2.9, 'x', 2],[142.0, 2, ',', 2],[172.0, 100, ',', 5]

MgO/CoFe
###Tunnel magnetoresistance and spin-transfer-torque switching in polycrystalline Co2FeAl full-Heusler alloy magnetic tunnel junctions on Si/SiO2 amorphous substrates|Zhenchao Wen,Hiroaki Sukegawa,Shinya Kasai,Koichiro Inomata,Seiji Mitani###
(1435123, 1435127)
 A tunnel magnetoresistance(TMR) ratio up to 175% was obtained for an MTJ with a CFA/MgO/CoFe structure ona 7.5-nm-thick MgO buffer.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[23.0, 175, '%', 0],[108.0, 8.2, 'x', 2],[116.0, 2, ',', 2],[127.0, 2.9, 'x', 2],[135.0, 2, ',', 2],[165.0, 100, ',', 5]

MgO
###Tunnel magnetoresistance and spin-transfer-torque switching in polycrystalline Co2FeAl full-Heusler alloy magnetic tunnel junctions on Si/SiO2 amorphous substrates|Zhenchao Wen,Hiroaki Sukegawa,Shinya Kasai,Koichiro Inomata,Seiji Mitani###
(1435142, 1435143)
 A tunnel magnetoresistance(TMR) ratio up to 175% was obtained for an MTJ with a CFA/MgO/CoFe structure ona 7.5-nm-thick MgO buffer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 175, '%', 0],[92.0, 8.2, 'x', 2],[100.0, 2, ',', 2],[111.0, 2.9, 'x', 2],[119.0, 2, ',', 2],[149.0, 100, ',', 5]

CF
###Tunnel magnetoresistance and spin-transfer-torque switching in polycrystalline Co2FeAl full-Heusler alloy magnetic tunnel junctions on Si/SiO2 amorphous substrates|Zhenchao Wen,Hiroaki Sukegawa,Shinya Kasai,Koichiro Inomata,Seiji Mitani###
(1435185, 1435186)
 Spin-transfer torque induced magnetization switchingwas achieved in the MTJs with a 2-nm-thick polycrystalline CFA film as aswitching layer.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 175, '%', 1],[49.0, 8.2, 'x', 1],[57.0, 2, ',', 1],[68.0, 2.9, 'x', 1],[76.0, 2, ',', 1],[106.0, 100, ',', 4]

CF
###Tunnel magnetoresistance and spin-transfer-torque switching in polycrystalline Co2FeAl full-Heusler alloy magnetic tunnel junctions on Si/SiO2 amorphous substrates|Zhenchao Wen,Hiroaki Sukegawa,Shinya Kasai,Koichiro Inomata,Seiji Mitani###
(1435273, 1435274)
 Using a thermal activation model, the intrinsic criticalcurrent density (Jc0) was determined to be 8.2 x 106 A/cm2, which is lowerthan 2.9 x 107 A/cm2, the value for epitaxial CFA-MTJs [Appl.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 175, '%', 2],[38.0, 8.2, 'x', 0],[30.0, 2, ',', 0],[19.0, 2.9, 'x', 0],[11.0, 2, ',', 0],[18.0, 100, ',', 3]

CF
###Tunnel magnetoresistance and spin-transfer-torque switching in polycrystalline Co2FeAl full-Heusler alloy magnetic tunnel junctions on Si/SiO2 amorphous substrates|Zhenchao Wen,Hiroaki Sukegawa,Shinya Kasai,Koichiro Inomata,Seiji Mitani###
(1435334, 1435335)
 We found that the Gilbert damping constant evaluated usingferromagnetic resonance measurements for the polycrystalline CFA film was0.015 and was almost independent of the CFA thickness (218 nm).
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[234.0, 175, '%', 6],[99.0, 8.2, 'x', 4],[91.0, 2, ',', 4],[80.0, 2.9, 'x', 4],[72.0, 2, ',', 4],[42.0, 100, ',', 1]

CF
###Tunnel magnetoresistance and spin-transfer-torque switching in polycrystalline Co2FeAl full-Heusler alloy magnetic tunnel junctions on Si/SiO2 amorphous substrates|Zhenchao Wen,Hiroaki Sukegawa,Shinya Kasai,Koichiro Inomata,Seiji Mitani###
(1435357, 1435358)
 We found that the Gilbert damping constant evaluated usingferromagnetic resonance measurements for the polycrystalline CFA film was0.015 and was almost independent of the CFA thickness (218 nm).
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[257.0, 175, '%', 6],[122.0, 8.2, 'x', 4],[114.0, 2, ',', 4],[103.0, 2.9, 'x', 4],[95.0, 2, ',', 4],[65.0, 100, ',', 1]

CF
###Tunnel magnetoresistance and spin-transfer-torque switching in polycrystalline Co2FeAl full-Heusler alloy magnetic tunnel junctions on Si/SiO2 amorphous substrates|Zhenchao Wen,Hiroaki Sukegawa,Shinya Kasai,Koichiro Inomata,Seiji Mitani###
(1435407, 1435408)
 The low Jc0for the polycrystalline MTJ was mainly attributed to the low damping of the CFAlayer compared with the value in the epitaxial one (0.04).
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[307.0, 175, '%', 7],[172.0, 8.2, 'x', 5],[164.0, 2, ',', 5],[153.0, 2.9, 'x', 5],[145.0, 2, ',', 5],[115.0, 100, ',', 2]

LiTi2O4
###Anomalous magnetoresistance in the spinel superconductor LiTi2O4|Kui Jin,Ge He,Xiaohang Zhang,Shingo Maruyama,Shintaro Yasui,Richard Suchoski,Jongmoon Shin,Yeping Jiang,Heshan Yu,Lei Shan,Richard L. Greene,Ichiro Takeuchi###
(1435455, 1435459)
Anomalous magnetoresistance in the spinel superconductor LiTi2O4.
Featurization terminated normally.
0,0,0.14285714285714285,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(SC)
###Anomalous magnetoresistance in the spinel superconductor LiTi2O4|Kui Jin,Ge He,Xiaohang Zhang,Shingo Maruyama,Shintaro Yasui,Richard Suchoski,Jongmoon Shin,Yeping Jiang,Heshan Yu,Lei Shan,Richard L. Greene,Ichiro Takeuchi###
(1435490, 1435493)
 Transition-metal oxides offer an opportunity to explore unconventionalsuperconductors, where the superconductivity (SC) is often interrelated withnovel phenomena such as spin/charge order, fluctuations, and Fermi surfaceinstability (1-3).
Featurization successful!
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LiTi2O4
###Anomalous magnetoresistance in the spinel superconductor LiTi2O4|Kui Jin,Ge He,Xiaohang Zhang,Shingo Maruyama,Shintaro Yasui,Richard Suchoski,Jongmoon Shin,Yeping Jiang,Heshan Yu,Lei Shan,Richard L. Greene,Ichiro Takeuchi###
(1435538, 1435542)
 LiTi2O4 (LTO) is a unique compound in that it is the onlyknown spinel oxide superconductor.
Featurization terminated normally.
0,0,0.14285714285714285,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Anomalous magnetoresistance in the spinel superconductor LiTi2O4|Kui Jin,Ge He,Xiaohang Zhang,Shingo Maruyama,Shintaro Yasui,Richard Suchoski,Jongmoon Shin,Yeping Jiang,Heshan Yu,Lei Shan,Richard L. Greene,Ichiro Takeuchi###
(1435547, 1435547)
 LiTi2O4 (LTO) is a unique compound in that it is the onlyknown spinel oxide superconductor.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Anomalous magnetoresistance in the spinel superconductor LiTi2O4|Kui Jin,Ge He,Xiaohang Zhang,Shingo Maruyama,Shintaro Yasui,Richard Suchoski,Jongmoon Shin,Yeping Jiang,Heshan Yu,Lei Shan,Richard L. Greene,Ichiro Takeuchi###
(1435580, 1435580)
 In addition to electron-phonon coupling,electron-electron and spin fluctuation contributions have been suggested asplaying important roles in the microscopic mechanism for its superconductivity(4-8).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Anomalous magnetoresistance in the spinel superconductor LiTi2O4|Kui Jin,Ge He,Xiaohang Zhang,Shingo Maruyama,Shintaro Yasui,Richard Suchoski,Jongmoon Shin,Yeping Jiang,Heshan Yu,Lei Shan,Richard L. Greene,Ichiro Takeuchi###
(1435716, 1435716)
 Here, we report acareful study of transport and tunneling spectroscopy in epitaxial LTO thinfilms.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Anomalous magnetoresistance in the spinel superconductor LiTi2O4|Kui Jin,Ge He,Xiaohang Zhang,Shingo Maruyama,Shintaro Yasui,Richard Suchoski,Jongmoon Shin,Yeping Jiang,Heshan Yu,Lei Shan,Richard L. Greene,Ichiro Takeuchi###
(1435724, 1435724)
 In the superconducting state, the energy gap was found to decrease as aquadratic function of magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Anomalous magnetoresistance in the spinel superconductor LiTi2O4|Kui Jin,Ge He,Xiaohang Zhang,Shingo Maruyama,Shintaro Yasui,Richard Suchoski,Jongmoon Shin,Yeping Jiang,Heshan Yu,Lei Shan,Richard L. Greene,Ichiro Takeuchi###
(1435763, 1435763)
 In the normal state, an unusualmagnetoresistance (MR) was observed where it changes from anisotropic positiveto isotropic negative as the temperature is increased.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.7Ce0.3MnO3
###Conductivity and magnetoresistance of La$_{0.7}$Ce$_{0.3}$MnO$_3$ thin films under photoexcitation|Andreas Thiessen,Elke Beyreuther,Robert Werner,Reinhold Kleiner,Dieter Koelle,Lukas M. Eng###
(1435949, 1435955)
Conductivity and magnetoresistance of La0.7Ce0.3MnO3 thin films under photoexcitation.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.7Ce0.3MnO3
###Conductivity and magnetoresistance of La$_{0.7}$Ce$_{0.3}$MnO$_3$ thin films under photoexcitation|Andreas Thiessen,Elke Beyreuther,Robert Werner,Reinhold Kleiner,Dieter Koelle,Lukas M. Eng###
(1435966, 1435972)
 La0.7Ce0.3MnO3 thin films of different thicknesses, degrees ofCeO2-phase segregation and oxygen deficiency, grown on SrTiO3 singlecrystal substrates, were comparatively investigated with respect to both theirspectral and temperature-dependent photoconductivity (PC) and theirmagnetoresistance (MR) behaviour under photoexcitation.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CeO2
###Conductivity and magnetoresistance of La$_{0.7}$Ce$_{0.3}$MnO$_3$ thin films under photoexcitation|Andreas Thiessen,Elke Beyreuther,Robert Werner,Reinhold Kleiner,Dieter Koelle,Lukas M. Eng###
(1435990, 1435992)
 La0.7Ce0.3MnO3 thin films of different thicknesses, degrees ofCeO2-phase segregation and oxygen deficiency, grown on SrTiO3 singlecrystal substrates, were comparatively investigated with respect to both theirspectral and temperature-dependent photoconductivity (PC) and theirmagnetoresistance (MR) behaviour under photoexcitation.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Conductivity and magnetoresistance of La$_{0.7}$Ce$_{0.3}$MnO$_3$ thin films under photoexcitation|Andreas Thiessen,Elke Beyreuther,Robert Werner,Reinhold Kleiner,Dieter Koelle,Lukas M. Eng###
(1436009, 1436012)
 La0.7Ce0.3MnO3 thin films of different thicknesses, degrees ofCeO2-phase segregation and oxygen deficiency, grown on SrTiO3 singlecrystal substrates, were comparatively investigated with respect to both theirspectral and temperature-dependent photoconductivity (PC) and theirmagnetoresistance (MR) behaviour under photoexcitation.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(PC)
###Conductivity and magnetoresistance of La$_{0.7}$Ce$_{0.3}$MnO$_3$ thin films under photoexcitation|Andreas Thiessen,Elke Beyreuther,Robert Werner,Reinhold Kleiner,Dieter Koelle,Lukas M. Eng###
(1436049, 1436052)
 La0.7Ce0.3MnO3 thin films of different thicknesses, degrees ofCeO2-phase segregation and oxygen deficiency, grown on SrTiO3 singlecrystal substrates, were comparatively investigated with respect to both theirspectral and temperature-dependent photoconductivity (PC) and theirmagnetoresistance (MR) behaviour under photoexcitation.
Featurization successful!
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PC
###Conductivity and magnetoresistance of La$_{0.7}$Ce$_{0.3}$MnO$_3$ thin films under photoexcitation|Andreas Thiessen,Elke Beyreuther,Robert Werner,Reinhold Kleiner,Dieter Koelle,Lukas M. Eng###
(1436167, 1436168)
 However, from the evaluation of the spectral behaviour ofthe PC and the comparison of the MR of the LCeMO/substrate-samples with a baresubstrate under illumination we find that the photoconductivity data reflectsnot only contributions from (i) photogenerated charge carriers in the film and(ii) carriers injected from the photoconductive substrate (as concluded fromearlier works), but also (iii) a decisive parallel photoconduction in theSrTiO3 substrate.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Conductivity and magnetoresistance of La$_{0.7}$Ce$_{0.3}$MnO$_3$ thin films under photoexcitation|Andreas Thiessen,Elke Beyreuther,Robert Werner,Reinhold Kleiner,Dieter Koelle,Lukas M. Eng###
(1436190, 1436190)
 However, from the evaluation of the spectral behaviour ofthe PC and the comparison of the MR of the LCeMO/substrate-samples with a baresubstrate under illumination we find that the photoconductivity data reflectsnot only contributions from (i) photogenerated charge carriers in the film and(ii) carriers injected from the photoconductive substrate (as concluded fromearlier works), but also (iii) a decisive parallel photoconduction in theSrTiO3 substrate.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Conductivity and magnetoresistance of La$_{0.7}$Ce$_{0.3}$MnO$_3$ thin films under photoexcitation|Andreas Thiessen,Elke Beyreuther,Robert Werner,Reinhold Kleiner,Dieter Koelle,Lukas M. Eng###
(1436302, 1436305)
 However, from the evaluation of the spectral behaviour ofthe PC and the comparison of the MR of the LCeMO/substrate-samples with a baresubstrate under illumination we find that the photoconductivity data reflectsnot only contributions from (i) photogenerated charge carriers in the film and(ii) carriers injected from the photoconductive substrate (as concluded fromearlier works), but also (iii) a decisive parallel photoconduction in theSrTiO3 substrate.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CeO2
###Conductivity and magnetoresistance of La$_{0.7}$Ce$_{0.3}$MnO$_3$ thin films under photoexcitation|Andreas Thiessen,Elke Beyreuther,Robert Werner,Reinhold Kleiner,Dieter Koelle,Lukas M. Eng###
(1436365, 1436367)
 Furthermore -- also by analyzing the MR characteristics --the unexpected occurence of a strong electroresistive effect in the sample withthe highest degree of CeO2 segregation and oxygen deficiency could beattributed to the electroresistance of the SrTiO3 substrate as well.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Conductivity and magnetoresistance of La$_{0.7}$Ce$_{0.3}$MnO$_3$ thin films under photoexcitation|Andreas Thiessen,Elke Beyreuther,Robert Werner,Reinhold Kleiner,Dieter Koelle,Lukas M. Eng###
(1436394, 1436397)
 Furthermore -- also by analyzing the MR characteristics --the unexpected occurence of a strong electroresistive effect in the sample withthe highest degree of CeO2 segregation and oxygen deficiency could beattributed to the electroresistance of the SrTiO3 substrate as well.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Conductivity and magnetoresistance of La$_{0.7}$Ce$_{0.3}$MnO$_3$ thin films under photoexcitation|Andreas Thiessen,Elke Beyreuther,Robert Werner,Reinhold Kleiner,Dieter Koelle,Lukas M. Eng###
(1436453, 1436456)
 Theresults suggest a critical reconsideration and possibly a reinterpretation ofseveral previous photoconductivity and electroresistance investigations ofmanganite thin films on SrTiO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.7Sr0.3MnO3
###Point contact investigations of film and interface magnetoresistance of La$_{0.7}$Sr$_{0.3}$MnO$_3$ heterostructures on Nb:SrTiO$_{3}$|Asmund Monsen,Jos E. Boschker,Per Nordblad,Roland Mathieu,Thomas Tybell,Erik Wahlström###
(1436485, 1436491)
Point contact investigations of film and interface magnetoresistance of La0.7Sr0.3MnO3 heterostructures on NbSrTiO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 32, 'nm', 1],[125.0, -1.5, '%', 2]

NbSrTiO3
###Point contact investigations of film and interface magnetoresistance of La$_{0.7}$Sr$_{0.3}$MnO$_3$ heterostructures on Nb:SrTiO$_{3}$|Asmund Monsen,Jos E. Boschker,Per Nordblad,Roland Mathieu,Thomas Tybell,Erik Wahlström###
(1436497, 1436501)
Point contact investigations of film and interface magnetoresistance of La0.7Sr0.3MnO3 heterostructures on NbSrTiO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 32, 'nm', 1],[115.0, -1.5, '%', 2]

S
###Point contact investigations of film and interface magnetoresistance of La$_{0.7}$Sr$_{0.3}$MnO$_3$ heterostructures on Nb:SrTiO$_{3}$|Asmund Monsen,Jos E. Boschker,Per Nordblad,Roland Mathieu,Thomas Tybell,Erik Wahlström###
(1436504, 1436504)
 STM based magnetotransport measurements of epitaxialLa0.7Sr0.3MnO3 32 nm thick films with and without an internalLaMnO3 layer (0-8 nm thick) grown on Nb doped SrTiO3 are presented.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 32, 'nm', 0],[112.0, -1.5, '%', 1]

La0.7Sr0.3MnO3
###Point contact investigations of film and interface magnetoresistance of La$_{0.7}$Sr$_{0.3}$MnO$_3$ heterostructures on Nb:SrTiO$_{3}$|Asmund Monsen,Jos E. Boschker,Per Nordblad,Roland Mathieu,Thomas Tybell,Erik Wahlström###
(1436519, 1436525)
 STM based magnetotransport measurements of epitaxialLa0.7Sr0.3MnO3 32 nm thick films with and without an internalLaMnO3 layer (0-8 nm thick) grown on Nb doped SrTiO3 are presented.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[1.0, 32, 'nm', 0],[91.0, -1.5, '%', 1]

LaMnO3
###Point contact investigations of film and interface magnetoresistance of La$_{0.7}$Sr$_{0.3}$MnO$_3$ heterostructures on Nb:SrTiO$_{3}$|Asmund Monsen,Jos E. Boschker,Per Nordblad,Roland Mathieu,Thomas Tybell,Erik Wahlström###
(1436543, 1436546)
 STM based magnetotransport measurements of epitaxialLa0.7Sr0.3MnO3 32 nm thick films with and without an internalLaMnO3 layer (0-8 nm thick) grown on Nb doped SrTiO3 are presented.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 32, 'nm', 0],[70.0, -1.5, '%', 1]

Nb
###Point contact investigations of film and interface magnetoresistance of La$_{0.7}$Sr$_{0.3}$MnO$_3$ heterostructures on Nb:SrTiO$_{3}$|Asmund Monsen,Jos E. Boschker,Per Nordblad,Roland Mathieu,Thomas Tybell,Erik Wahlström###
(1436564, 1436564)
 STM based magnetotransport measurements of epitaxialLa0.7Sr0.3MnO3 32 nm thick films with and without an internalLaMnO3 layer (0-8 nm thick) grown on Nb doped SrTiO3 are presented.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 32, 'nm', 0],[52.0, -1.5, '%', 1]

SrTiO3
###Point contact investigations of film and interface magnetoresistance of La$_{0.7}$Sr$_{0.3}$MnO$_3$ heterostructures on Nb:SrTiO$_{3}$|Asmund Monsen,Jos E. Boschker,Per Nordblad,Roland Mathieu,Thomas Tybell,Erik Wahlström###
(1436568, 1436571)
 STM based magnetotransport measurements of epitaxialLa0.7Sr0.3MnO3 32 nm thick films with and without an internalLaMnO3 layer (0-8 nm thick) grown on Nb doped SrTiO3 are presented.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 32, 'nm', 0],[45.0, -1.5, '%', 1]

I
###Point contact investigations of film and interface magnetoresistance of La$_{0.7}$Sr$_{0.3}$MnO$_3$ heterostructures on Nb:SrTiO$_{3}$|Asmund Monsen,Jos E. Boschker,Per Nordblad,Roland Mathieu,Thomas Tybell,Erik Wahlström###
(1436657, 1436657)
 One LFMR contribution is identified as aconventional grain boundary/domain wall scattering through the symmetric I-Vcharacteristics, high dependence on tip placements and insensitivity tointroduction of LaMnO3 layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 32, 'nm', 2],[41.0, -1.5, '%', 1]

V
###Point contact investigations of film and interface magnetoresistance of La$_{0.7}$Sr$_{0.3}$MnO$_3$ heterostructures on Nb:SrTiO$_{3}$|Asmund Monsen,Jos E. Boschker,Per Nordblad,Roland Mathieu,Thomas Tybell,Erik Wahlström###
(1436659, 1436659)
 One LFMR contribution is identified as aconventional grain boundary/domain wall scattering through the symmetric I-Vcharacteristics, high dependence on tip placements and insensitivity tointroduction of LaMnO3 layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 32, 'nm', 2],[43.0, -1.5, '%', 1]

LaMnO3
###Point contact investigations of film and interface magnetoresistance of La$_{0.7}$Sr$_{0.3}$MnO$_3$ heterostructures on Nb:SrTiO$_{3}$|Asmund Monsen,Jos E. Boschker,Per Nordblad,Roland Mathieu,Thomas Tybell,Erik Wahlström###
(1436686, 1436689)
 One LFMR contribution is identified as aconventional grain boundary/domain wall scattering through the symmetric I-Vcharacteristics, high dependence on tip placements and insensitivity tointroduction of LaMnO3 layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 32, 'nm', 2],[70.0, -1.5, '%', 1]

Nb
###Point contact investigations of film and interface magnetoresistance of La$_{0.7}$Sr$_{0.3}$MnO$_3$ heterostructures on Nb:SrTiO$_{3}$|Asmund Monsen,Jos E. Boschker,Per Nordblad,Roland Mathieu,Thomas Tybell,Erik Wahlström###
(1436711, 1436711)
 The other contribution originates from thereverse biased Nb doped SrTiO3 interface and the interface layer ofLa0.7Sr0.3MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[185.0, 32, 'nm', 3],[95.0, -1.5, '%', 2]

SrTiO3
###Point contact investigations of film and interface magnetoresistance of La$_{0.7}$Sr$_{0.3}$MnO$_3$ heterostructures on Nb:SrTiO$_{3}$|Asmund Monsen,Jos E. Boschker,Per Nordblad,Roland Mathieu,Thomas Tybell,Erik Wahlström###
(1436715, 1436718)
 The other contribution originates from thereverse biased Nb doped SrTiO3 interface and the interface layer ofLa0.7Sr0.3MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[189.0, 32, 'nm', 3],[99.0, -1.5, '%', 2]

La0.7Sr0.3MnO3
###Point contact investigations of film and interface magnetoresistance of La$_{0.7}$Sr$_{0.3}$MnO$_3$ heterostructures on Nb:SrTiO$_{3}$|Asmund Monsen,Jos E. Boschker,Per Nordblad,Roland Mathieu,Thomas Tybell,Erik Wahlström###
(1436733, 1436739)
 The other contribution originates from thereverse biased Nb doped SrTiO3 interface and the interface layer ofLa0.7Sr0.3MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[207.0, 32, 'nm', 3],[117.0, -1.5, '%', 2]

LaMnO3
###Point contact investigations of film and interface magnetoresistance of La$_{0.7}$Sr$_{0.3}$MnO$_3$ heterostructures on Nb:SrTiO$_{3}$|Asmund Monsen,Jos E. Boschker,Per Nordblad,Roland Mathieu,Thomas Tybell,Erik Wahlström###
(1436786, 1436789)
 LaMnO3layers are found to reduce the rectifying properties of the junctions, and submicron lateral patterning by electron beam lithography enhances the diodicproperties, in accordance with a proposed transport model based on the localityof the injected current.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[260.0, 32, 'nm', 5],[170.0, -1.5, '%', 4]

FO
###Accessing Different Spin-Disordered States using First Order Reversal Curves|Randy K. Dumas,Peter K. Greene,Dustin A. Gilbert,Li Ye,Chaolin Zha,Johan Åkerman,Kai Liu###
(1436916, 1436917)
 Combined first order reversal curve (FOR<missing VAR>C) analyses of the magnetization(M<missing VAR>-FOR<missing VAR>C) and magnetoresistance (MR-FOR<missing VAR>C) have been employed to provide acomprehensive study of the M-MR correlation in two canonical systems aNiFe/Cu/FePt pseudo spin-valve (PSV) and a [Co/Cu]8 multilayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Accessing Different Spin-Disordered States using First Order Reversal Curves|Randy K. Dumas,Peter K. Greene,Dustin A. Gilbert,Li Ye,Chaolin Zha,Johan Åkerman,Kai Liu###
(1436919, 1436919)
 Combined first order reversal curve (FOR<missing VAR>C) analyses of the magnetization(M<missing VAR>-FOR<missing VAR>C) and magnetoresistance (MR-FOR<missing VAR>C) have been employed to provide acomprehensive study of the M-MR correlation in two canonical systems aNiFe/Cu/FePt pseudo spin-valve (PSV) and a [Co/Cu]8 multilayer.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FO
###Accessing Different Spin-Disordered States using First Order Reversal Curves|Randy K. Dumas,Peter K. Greene,Dustin A. Gilbert,Li Ye,Chaolin Zha,Johan Åkerman,Kai Liu###
(1436934, 1436935)
 Combined first order reversal curve (FOR<missing VAR>C) analyses of the magnetization(M<missing VAR>-FOR<missing VAR>C) and magnetoresistance (MR-FOR<missing VAR>C) have been employed to provide acomprehensive study of the M-MR correlation in two canonical systems aNiFe/Cu/FePt pseudo spin-valve (PSV) and a [Co/Cu]8 multilayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Accessing Different Spin-Disordered States using First Order Reversal Curves|Randy K. Dumas,Peter K. Greene,Dustin A. Gilbert,Li Ye,Chaolin Zha,Johan Åkerman,Kai Liu###
(1436937, 1436937)
 Combined first order reversal curve (FOR<missing VAR>C) analyses of the magnetization(M<missing VAR>-FOR<missing VAR>C) and magnetoresistance (MR-FOR<missing VAR>C) have been employed to provide acomprehensive study of the M-MR correlation in two canonical systems aNiFe/Cu/FePt pseudo spin-valve (PSV) and a [Co/Cu]8 multilayer.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FO
###Accessing Different Spin-Disordered States using First Order Reversal Curves|Randy K. Dumas,Peter K. Greene,Dustin A. Gilbert,Li Ye,Chaolin Zha,Johan Åkerman,Kai Liu###
(1436948, 1436949)
 Combined first order reversal curve (FOR<missing VAR>C) analyses of the magnetization(M<missing VAR>-FOR<missing VAR>C) and magnetoresistance (MR-FOR<missing VAR>C) have been employed to provide acomprehensive study of the M-MR correlation in two canonical systems aNiFe/Cu/FePt pseudo spin-valve (PSV) and a [Co/Cu]8 multilayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Accessing Different Spin-Disordered States using First Order Reversal Curves|Randy K. Dumas,Peter K. Greene,Dustin A. Gilbert,Li Ye,Chaolin Zha,Johan Åkerman,Kai Liu###
(1436951, 1436951)
 Combined first order reversal curve (FOR<missing VAR>C) analyses of the magnetization(M<missing VAR>-FOR<missing VAR>C) and magnetoresistance (MR-FOR<missing VAR>C) have been employed to provide acomprehensive study of the M-MR correlation in two canonical systems aNiFe/Cu/FePt pseudo spin-valve (PSV) and a [Co/Cu]8 multilayer.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiFe/Cu/FePt
###Accessing Different Spin-Disordered States using First Order Reversal Curves|Randy K. Dumas,Peter K. Greene,Dustin A. Gilbert,Li Ye,Chaolin Zha,Johan Åkerman,Kai Liu###
(1436993, 1436999)
 Combined first order reversal curve (FOR<missing VAR>C) analyses of the magnetization(M<missing VAR>-FOR<missing VAR>C) and magnetoresistance (MR-FOR<missing VAR>C) have been employed to provide acomprehensive study of the M-MR correlation in two canonical systems aNiFe/Cu/FePt pseudo spin-valve (PSV) and a [Co/Cu]8 multilayer.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

(PSV)
###Accessing Different Spin-Disordered States using First Order Reversal Curves|Randy K. Dumas,Peter K. Greene,Dustin A. Gilbert,Li Ye,Chaolin Zha,Johan Åkerman,Kai Liu###
(1437007, 1437011)
 Combined first order reversal curve (FOR<missing VAR>C) analyses of the magnetization(M<missing VAR>-FOR<missing VAR>C) and magnetoresistance (MR-FOR<missing VAR>C) have been employed to provide acomprehensive study of the M-MR correlation in two canonical systems aNiFe/Cu/FePt pseudo spin-valve (PSV) and a [Co/Cu]8 multilayer.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Accessing Different Spin-Disordered States using First Order Reversal Curves|Randy K. Dumas,Peter K. Greene,Dustin A. Gilbert,Li Ye,Chaolin Zha,Johan Åkerman,Kai Liu###
(1437020, 1437020)
 Combined first order reversal curve (FOR<missing VAR>C) analyses of the magnetization(M<missing VAR>-FOR<missing VAR>C) and magnetoresistance (MR-FOR<missing VAR>C) have been employed to provide acomprehensive study of the M-MR correlation in two canonical systems aNiFe/Cu/FePt pseudo spin-valve (PSV) and a [Co/Cu]8 multilayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Accessing Different Spin-Disordered States using First Order Reversal Curves|Randy K. Dumas,Peter K. Greene,Dustin A. Gilbert,Li Ye,Chaolin Zha,Johan Åkerman,Kai Liu###
(1437027, 1437027)
 In the PSV, dueto the large difference in switching fields and minimal interactions betweenthe NiFe and FePt layers, the M<missing VAR> and MR show a simple one-to-one relationshipduring reversal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PSV
###Accessing Different Spin-Disordered States using First Order Reversal Curves|Randy K. Dumas,Peter K. Greene,Dustin A. Gilbert,Li Ye,Chaolin Zha,Johan Åkerman,Kai Liu###
(1437031, 1437033)
 In the PSV, dueto the large difference in switching fields and minimal interactions betweenthe NiFe and FePt layers, the M<missing VAR> and MR show a simple one-to-one relationshipduring reversal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiFe
###Accessing Different Spin-Disordered States using First Order Reversal Curves|Randy K. Dumas,Peter K. Greene,Dustin A. Gilbert,Li Ye,Chaolin Zha,Johan Åkerman,Kai Liu###
(1437064, 1437065)
 In the PSV, dueto the large difference in switching fields and minimal interactions betweenthe NiFe and FePt layers, the M<missing VAR> and MR show a simple one-to-one relationshipduring reversal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FePt
###Accessing Different Spin-Disordered States using First Order Reversal Curves|Randy K. Dumas,Peter K. Greene,Dustin A. Gilbert,Li Ye,Chaolin Zha,Johan Åkerman,Kai Liu###
(1437069, 1437070)
 In the PSV, dueto the large difference in switching fields and minimal interactions betweenthe NiFe and FePt layers, the M<missing VAR> and MR show a simple one-to-one relationshipduring reversal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Accessing Different Spin-Disordered States using First Order Reversal Curves|Randy K. Dumas,Peter K. Greene,Dustin A. Gilbert,Li Ye,Chaolin Zha,Johan Åkerman,Kai Liu###
(1437104, 1437104)
 In the [Co/Cu]8 multilayer, the correlation between themagnetization reversal and MR evolution is more complex.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Accessing Different Spin-Disordered States using First Order Reversal Curves|Randy K. Dumas,Peter K. Greene,Dustin A. Gilbert,Li Ye,Chaolin Zha,Johan Åkerman,Kai Liu###
(1437111, 1437111)
 In the [Co/Cu]8 multilayer, the correlation between themagnetization reversal and MR evolution is more complex.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Accessing Different Spin-Disordered States using First Order Reversal Curves|Randy K. Dumas,Peter K. Greene,Dustin A. Gilbert,Li Ye,Chaolin Zha,Johan Åkerman,Kai Liu###
(1437179, 1437179)
 This is primarily dueto the similar switching fields of, and interactions between, the constituentCo layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FO
###Accessing Different Spin-Disordered States using First Order Reversal Curves|Randy K. Dumas,Peter K. Greene,Dustin A. Gilbert,Li Ye,Chaolin Zha,Johan Åkerman,Kai Liu###
(1437186, 1437187)
 The FOR<missing VAR>C protocol accesses states with much higher spin disordersand larger MR than those found along the conventional major loop field-cycle.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Accessing Different Spin-Disordered States using First Order Reversal Curves|Randy K. Dumas,Peter K. Greene,Dustin A. Gilbert,Li Ye,Chaolin Zha,Johan Åkerman,Kai Liu###
(1437189, 1437189)
 The FOR<missing VAR>C protocol accesses states with much higher spin disordersand larger MR than those found along the conventional major loop field-cycle.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FO
###Accessing Different Spin-Disordered States using First Order Reversal Curves|Randy K. Dumas,Peter K. Greene,Dustin A. Gilbert,Li Ye,Chaolin Zha,Johan Åkerman,Kai Liu###
(1437243, 1437244)
Unlike the M<missing VAR>-FOR<missing VAR>C measurements, which only probe changes in the macroscopicmagnetization, the MR-FOR<missing VAR>Cs are more sensitive to the microscopic domainconfigurations, as those are most important in determining the resultant MReffect size.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Accessing Different Spin-Disordered States using First Order Reversal Curves|Randy K. Dumas,Peter K. Greene,Dustin A. Gilbert,Li Ye,Chaolin Zha,Johan Åkerman,Kai Liu###
(1437246, 1437246)
Unlike the M<missing VAR>-FOR<missing VAR>C measurements, which only probe changes in the macroscopicmagnetization, the MR-FOR<missing VAR>Cs are more sensitive to the microscopic domainconfigurations, as those are most important in determining the resultant MReffect size.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FO
###Accessing Different Spin-Disordered States using First Order Reversal Curves|Randy K. Dumas,Peter K. Greene,Dustin A. Gilbert,Li Ye,Chaolin Zha,Johan Åkerman,Kai Liu###
(1437274, 1437275)
Unlike the M<missing VAR>-FOR<missing VAR>C measurements, which only probe changes in the macroscopicmagnetization, the MR-FOR<missing VAR>Cs are more sensitive to the microscopic domainconfigurations, as those are most important in determining the resultant MReffect size.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cs
###Accessing Different Spin-Disordered States using First Order Reversal Curves|Randy K. Dumas,Peter K. Greene,Dustin A. Gilbert,Li Ye,Chaolin Zha,Johan Åkerman,Kai Liu###
(1437277, 1437277)
Unlike the M<missing VAR>-FOR<missing VAR>C measurements, which only probe changes in the macroscopicmagnetization, the MR-FOR<missing VAR>Cs are more sensitive to the microscopic domainconfigurations, as those are most important in determining the resultant MReffect size.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Controlling and distinguishing electronic transport of topological and trivial surface states in a topological insulator|Helin Cao,Chang Liu,Jifa Tian,Yang Xu,Ireneusz Miotkowski,M. Zahid Hasan,Yong P. Chen###
(1437408, 1437408)
 Topological insulators (T<missing VAR>I), with characteristic Dirac-fermion topologicalsurface states (T<missing VAR>SS), have emerged as a new class of electronic materials withrich potentials for both novel physics and device applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[193.0, 2, 'DEG', 2],[332.0, 2, 'DEG', 4]

S
###Controlling and distinguishing electronic transport of topological and trivial surface states in a topological insulator|Helin Cao,Chang Liu,Jifa Tian,Yang Xu,Ireneusz Miotkowski,M. Zahid Hasan,Yong P. Chen###
(1437430, 1437430)
 Topological insulators (T<missing VAR>I), with characteristic Dirac-fermion topologicalsurface states (T<missing VAR>SS), have emerged as a new class of electronic materials withrich potentials for both novel physics and device applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[171.0, 2, 'DEG', 2],[310.0, 2, 'DEG', 4]

I
###Controlling and distinguishing electronic transport of topological and trivial surface states in a topological insulator|Helin Cao,Chang Liu,Jifa Tian,Yang Xu,Ireneusz Miotkowski,M. Zahid Hasan,Yong P. Chen###
(1437489, 1437489)
 However, amajor challenge with realistic T<missing VAR>I materials is to access, distinguish andmanipulate the electronic transport of T<missing VAR>SS often obscured by other possibleparallel conduction channels that include the bulk as well as a two-dimensionalelectron gas (2DEG) formed near the surface due to bending of the bulk bands.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 2, 'DEG', 1],[251.0, 2, 'DEG', 3]

SS
###Controlling and distinguishing electronic transport of topological and trivial surface states in a topological insulator|Helin Cao,Chang Liu,Jifa Tian,Yang Xu,Ireneusz Miotkowski,M. Zahid Hasan,Yong P. Chen###
(1437516, 1437517)
 However, amajor challenge with realistic T<missing VAR>I materials is to access, distinguish andmanipulate the electronic transport of T<missing VAR>SS often obscured by other possibleparallel conduction channels that include the bulk as well as a two-dimensionalelectron gas (2DEG) formed near the surface due to bending of the bulk bands.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 2, 'DEG', 1],[223.0, 2, 'DEG', 3]

SS
###Controlling and distinguishing electronic transport of topological and trivial surface states in a topological insulator|Helin Cao,Chang Liu,Jifa Tian,Yang Xu,Ireneusz Miotkowski,M. Zahid Hasan,Yong P. Chen###
(1437624, 1437625)
Such a (Schrodinger-fermion) 2DEG represents topologically-trivial surfacestates, whose coexistence with the T<missing VAR>SS has been revealed by angle resolvedphotoemission spectroscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 2, 'DEG', 0],[115.0, 2, 'DEG', 2]

Bi2Te2Se
###Controlling and distinguishing electronic transport of topological and trivial surface states in a topological insulator|Helin Cao,Chang Liu,Jifa Tian,Yang Xu,Ireneusz Miotkowski,M. Zahid Hasan,Yong P. Chen###
(1437701, 1437705)
 Here we show that simple manipulations of surfaceconditions can be used to access and control both types of surface states andtheir coexistence in bulk-insulating Bi2Te2Se, whose surface conduction isprominently manifested in temperature dependent resistance and nonlocaltransport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 2, 'DEG', 1],[35.0, 2, 'DEG', 1]

SS
###Controlling and distinguishing electronic transport of topological and trivial surface states in a topological insulator|Helin Cao,Chang Liu,Jifa Tian,Yang Xu,Ireneusz Miotkowski,M. Zahid Hasan,Yong P. Chen###
(1437745, 1437746)
 The trivial 2DEG and T<missing VAR>SS can both exhibit clear Shubnikov-de Haasoscillations in magnetoresistance, with different Berry phases 0 and pi thatdistinguish their different topological characters.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 2, 'DEG', 2],[5.0, 2, 'DEG', 0]

SS
###Controlling and distinguishing electronic transport of topological and trivial surface states in a topological insulator|Helin Cao,Chang Liu,Jifa Tian,Yang Xu,Ireneusz Miotkowski,M. Zahid Hasan,Yong P. Chen###
(1437834, 1437835)
 We also report a deviationfrom the typical weak antilocalization behavior, possibly due to high mobilityT<missing VAR>SS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[233.0, 2, 'DEG', 3],[94.0, 2, 'DEG', 1]

I
###Controlling and distinguishing electronic transport of topological and trivial surface states in a topological insulator|Helin Cao,Chang Liu,Jifa Tian,Yang Xu,Ireneusz Miotkowski,M. Zahid Hasan,Yong P. Chen###
(1437861, 1437861)
 Our study enables distinguishing, controlling and harnessing electronictransport of T<missing VAR>I surface carriers with different topological natures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[260.0, 2, 'DEG', 4],[121.0, 2, 'DEG', 2]

S
###Electrically tuned magnetic order and magnetoresistance in a topological insulator|Zuocheng Zhang,Xiao Feng,Minghua Guo,Kang Li,Jinsong Zhang,Yunbo Ou,Yang Feng,Lili Wang,Xi Chen,Ke He,Xucun Ma,Qikun Xue,Yayu Wang###
(1437944, 1437944)
 The Dirac-like surface states of the topological insulators (T<missing VAR>Is) areprotected by time reversal symmetry (TRS) and exhibit a host of novelproperties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Electrically tuned magnetic order and magnetoresistance in a topological insulator|Zuocheng Zhang,Xiao Feng,Minghua Guo,Kang Li,Jinsong Zhang,Yunbo Ou,Yang Feng,Lili Wang,Xi Chen,Ke He,Xucun Ma,Qikun Xue,Yayu Wang###
(1437970, 1437970)
 Introducing magnetism into T<missing VAR>I, which breaks the TRS, is expected tocreate exotic topological magnetoelectric effects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Electrically tuned magnetic order and magnetoresistance in a topological insulator|Zuocheng Zhang,Xiao Feng,Minghua Guo,Kang Li,Jinsong Zhang,Yunbo Ou,Yang Feng,Lili Wang,Xi Chen,Ke He,Xucun Ma,Qikun Xue,Yayu Wang###
(1437981, 1437981)
 Introducing magnetism into T<missing VAR>I, which breaks the TRS, is expected tocreate exotic topological magnetoelectric effects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Electrically tuned magnetic order and magnetoresistance in a topological insulator|Zuocheng Zhang,Xiao Feng,Minghua Guo,Kang Li,Jinsong Zhang,Yunbo Ou,Yang Feng,Lili Wang,Xi Chen,Ke He,Xucun Ma,Qikun Xue,Yayu Wang###
(1438064, 1438064)
 The intricate interplay betweentopological protection and broken-TRS may lead to highly unconventional MRbehaviour that can find unique applications in magnetic sensing and datastorage.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Electrically tuned magnetic order and magnetoresistance in a topological insulator|Zuocheng Zhang,Xiao Feng,Minghua Guo,Kang Li,Jinsong Zhang,Yunbo Ou,Yang Feng,Lili Wang,Xi Chen,Ke He,Xucun Ma,Qikun Xue,Yayu Wang###
(1438121, 1438121)
 However, so far the MR of T<missing VAR>I with spontaneously broken TRS is stillpoorly understood, mainly due to the lack of well-controlled experiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Electrically tuned magnetic order and magnetoresistance in a topological insulator|Zuocheng Zhang,Xiao Feng,Minghua Guo,Kang Li,Jinsong Zhang,Yunbo Ou,Yang Feng,Lili Wang,Xi Chen,Ke He,Xucun Ma,Qikun Xue,Yayu Wang###
(1438131, 1438131)
 However, so far the MR of T<missing VAR>I with spontaneously broken TRS is stillpoorly understood, mainly due to the lack of well-controlled experiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Electrically tuned magnetic order and magnetoresistance in a topological insulator|Zuocheng Zhang,Xiao Feng,Minghua Guo,Kang Li,Jinsong Zhang,Yunbo Ou,Yang Feng,Lili Wang,Xi Chen,Ke He,Xucun Ma,Qikun Xue,Yayu Wang###
(1438162, 1438162)
 Inthis work, we investigate the magneto transport properties of a ferromagneticT<missing VAR>I thin film fabricated into a field effect transistor device.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Electrically tuned magnetic order and magnetoresistance in a topological insulator|Zuocheng Zhang,Xiao Feng,Minghua Guo,Kang Li,Jinsong Zhang,Yunbo Ou,Yang Feng,Lili Wang,Xi Chen,Ke He,Xucun Ma,Qikun Xue,Yayu Wang###
(1438190, 1438190)
 Inthis work, we investigate the magneto transport properties of a ferromagneticT<missing VAR>I thin film fabricated into a field effect transistor device.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Electrically tuned magnetic order and magnetoresistance in a topological insulator|Zuocheng Zhang,Xiao Feng,Minghua Guo,Kang Li,Jinsong Zhang,Yunbo Ou,Yang Feng,Lili Wang,Xi Chen,Ke He,Xucun Ma,Qikun Xue,Yayu Wang###
(1438239, 1438239)
 We observe anunusually complex evolution of MR when the Fermi level (E<missing VAR>F) is tuned across theDirac point (D<missing VAR>P) by gate voltage.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Electrically tuned magnetic order and magnetoresistance in a topological insulator|Zuocheng Zhang,Xiao Feng,Minghua Guo,Kang Li,Jinsong Zhang,Yunbo Ou,Yang Feng,Lili Wang,Xi Chen,Ke He,Xucun Ma,Qikun Xue,Yayu Wang###
(1438257, 1438257)
 We observe anunusually complex evolution of MR when the Fermi level (E<missing VAR>F) is tuned across theDirac point (D<missing VAR>P) by gate voltage.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Electrically tuned magnetic order and magnetoresistance in a topological insulator|Zuocheng Zhang,Xiao Feng,Minghua Guo,Kang Li,Jinsong Zhang,Yunbo Ou,Yang Feng,Lili Wang,Xi Chen,Ke He,Xucun Ma,Qikun Xue,Yayu Wang###
(1438267, 1438267)
 In particular, MR tends to be positive whenE<missing VAR>F lies close to the D<missing VAR>P but becomes negative at higher energies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Electrically tuned magnetic order and magnetoresistance in a topological insulator|Zuocheng Zhang,Xiao Feng,Minghua Guo,Kang Li,Jinsong Zhang,Yunbo Ou,Yang Feng,Lili Wang,Xi Chen,Ke He,Xucun Ma,Qikun Xue,Yayu Wang###
(1438287, 1438287)
 In particular, MR tends to be positive whenE<missing VAR>F lies close to the D<missing VAR>P but becomes negative at higher energies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Electrically tuned magnetic order and magnetoresistance in a topological insulator|Zuocheng Zhang,Xiao Feng,Minghua Guo,Kang Li,Jinsong Zhang,Yunbo Ou,Yang Feng,Lili Wang,Xi Chen,Ke He,Xucun Ma,Qikun Xue,Yayu Wang###
(1438298, 1438298)
 In particular, MR tends to be positive whenE<missing VAR>F lies close to the D<missing VAR>P but becomes negative at higher energies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Electrically tuned magnetic order and magnetoresistance in a topological insulator|Zuocheng Zhang,Xiao Feng,Minghua Guo,Kang Li,Jinsong Zhang,Yunbo Ou,Yang Feng,Lili Wang,Xi Chen,Ke He,Xucun Ma,Qikun Xue,Yayu Wang###
(1438435, 1438435)
 The simultaneous electricalcontrol of magnetic order and magneto transport facilitates future T<missing VAR>I-basedspintronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SC
###Decoding Spatial Complexity in Strongly Correlated Electronic Systems|E. W. Carlson,S. Liu,B. Phillabaum,K. A. Dahmen###
(1438539, 1438540)
 By contrast,electrons often form clumpy patterns inside of strongly correlated electronicsystems (SCE<missing VAR>S) such as colossal magnetoresistance materials and hightemperature superconductors.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Decoding Spatial Complexity in Strongly Correlated Electronic Systems|E. W. Carlson,S. Liu,B. Phillabaum,K. A. Dahmen###
(1438542, 1438542)
 By contrast,electrons often form clumpy patterns inside of strongly correlated electronicsystems (SCE<missing VAR>S) such as colossal magnetoresistance materials and hightemperature superconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Decoding Spatial Complexity in Strongly Correlated Electronic Systems|E. W. Carlson,S. Liu,B. Phillabaum,K. A. Dahmen###
(1438565, 1438565)
 In copper-oxide based high temperaturesuperconductors, scanning tunneling microscopy (STM) has detected an electronnematic on the surface of the material, in which the electrons form nanoscalestructures which break the rotational symmetry of the host crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Decoding Spatial Complexity in Strongly Correlated Electronic Systems|E. W. Carlson,S. Liu,B. Phillabaum,K. A. Dahmen###
(1438588, 1438588)
 In copper-oxide based high temperaturesuperconductors, scanning tunneling microscopy (STM) has detected an electronnematic on the surface of the material, in which the electrons form nanoscalestructures which break the rotational symmetry of the host crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B6
###Excitonic and Nematic Instabilities on the Surface of Topological Kondo Insulators|Bitan Roy,Johannes Hofmann,Valentin Stanev,Jay D. Sau,Victor Galitski###
(1438985, 1438986)
 We study the effects of strong electron-electron interactions on the surfaceof cubic topological Kondo insulators (such as samarium hexaboride, SmB6).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SmB6
###Excitonic and Nematic Instabilities on the Surface of Topological Kondo Insulators|Bitan Roy,Johannes Hofmann,Valentin Stanev,Jay D. Sau,Victor Galitski###
(1439342, 1439344)
 Our theoryprovides a possible explanation of recent measurements which detect a two-foldsymmetric magnetoresistance and an upturn in surface resistivity with tunablegate voltage in SmB6.
Featurization terminated normally.
0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(YbB6)
###Excitonic and Nematic Instabilities on the Surface of Topological Kondo Insulators|Bitan Roy,Johannes Hofmann,Valentin Stanev,Jay D. Sau,Victor Galitski###
(1439379, 1439383)
 Our discussion can also be germane to other cubictopological insulators, such as ytterbium hexaboride (YbB6), plutoniumhexaboride (PuB6).
Featurization successful!
0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(PuB6)
###Excitonic and Nematic Instabilities on the Surface of Topological Kondo Insulators|Bitan Roy,Johannes Hofmann,Valentin Stanev,Jay D. Sau,Victor Galitski###
(1439391, 1439395)
 Our discussion can also be germane to other cubictopological insulators, such as ytterbium hexaboride (YbB6), plutoniumhexaboride (PuB6).
Featurization successful!
0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CHUF
###Kinetic arrest, and ubiquity of interrupted 1st order magnetic transitions|P. Chaddah###
(1439676, 1439679)
 The CHUF (cooling andheating in unequal field) protocol created at Indore allows the observation ofdevitrification, followed by melting.
Featurization terminated normally.
0.25,0,0,0,0,0.25,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0
[258.0, 1, 'st', 5],[216.0, 1, 'st', 3],[78.0, 1, 'st', 1],[108.0, 1, 'st', 1]

I
###Kinetic arrest, and ubiquity of interrupted 1st order magnetic transitions|P. Chaddah###
(1439723, 1439723)
 I show examples of measurementsestablishing kinetic arrest in various materials, emphasizing that glasslikearrest of 1st order magnetic transitions may be as ubiquitous as glassformation following the arrest of 1st order structural transitions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[305.0, 1, 'st', 6],[263.0, 1, 'st', 4],[34.0, 1, 'st', 0],[64.0, 1, 'st', 0]

Sr2IrO4
###Temperature evolution of magnetic and transport behavior in 5\textit{d} Mott insulator Sr$_2$IrO$_4$: Significance of magneto-structural coupling|Imtiaz Noor Bhatti,R. Rawat,A. Banerjee,A. K. Pramanik###
(1439828, 1439832)
Temperature evolution of magnetic and transport behavior in 5textitd<missing VAR> Mott insulator Sr2IrO4 Significance of magneto-structural coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 240, 'K', 2],[153.0, 100, 'K', 3],[200.0, 100, 'K', 4]

Sr2IrO4
###Temperature evolution of magnetic and transport behavior in 5\textit{d} Mott insulator Sr$_2$IrO$_4$: Significance of magneto-structural coupling|Imtiaz Noor Bhatti,R. Rawat,A. Banerjee,A. K. Pramanik###
(1439885, 1439889)
 We have investigated the temperature evolution of magnetism and itsinterrelation with structural parameters in perovskite-based layered compoundSr2IrO4, which is believed to be a J<missing VAR>eff  1/2 Mott insulator.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 240, 'K', 1],[96.0, 100, 'K', 2],[143.0, 100, 'K', 3]

V
###Temperature evolution of magnetic and transport behavior in 5\textit{d} Mott insulator Sr$_2$IrO$_4$: Significance of magneto-structural coupling|Imtiaz Noor Bhatti,R. Rawat,A. Banerjee,A. K. Pramanik###
(1440103, 1440103)
 The electronic transport can be described with Motts<missing VAR>two-dimensional variable range hopping (VR<missing VAR>H) mechanism, however, threedifferent temperature ranges are found for VR<missing VAR>H, which is a result of varyinglocalization length with temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 240, 'K', 4],[118.0, 100, 'K', 3],[71.0, 100, 'K', 2]

H
###Temperature evolution of magnetic and transport behavior in 5\textit{d} Mott insulator Sr$_2$IrO$_4$: Significance of magneto-structural coupling|Imtiaz Noor Bhatti,R. Rawat,A. Banerjee,A. K. Pramanik###
(1440105, 1440105)
 The electronic transport can be described with Motts<missing VAR>two-dimensional variable range hopping (VR<missing VAR>H) mechanism, however, threedifferent temperature ranges are found for VR<missing VAR>H, which is a result of varyinglocalization length with temperature.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 240, 'K', 4],[120.0, 100, 'K', 3],[73.0, 100, 'K', 2]

V
###Temperature evolution of magnetic and transport behavior in 5\textit{d} Mott insulator Sr$_2$IrO$_4$: Significance of magneto-structural coupling|Imtiaz Noor Bhatti,R. Rawat,A. Banerjee,A. K. Pramanik###
(1440129, 1440129)
 The electronic transport can be described with Motts<missing VAR>two-dimensional variable range hopping (VR<missing VAR>H) mechanism, however, threedifferent temperature ranges are found for VR<missing VAR>H, which is a result of varyinglocalization length with temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 240, 'K', 4],[144.0, 100, 'K', 3],[97.0, 100, 'K', 2]

H
###Temperature evolution of magnetic and transport behavior in 5\textit{d} Mott insulator Sr$_2$IrO$_4$: Significance of magneto-structural coupling|Imtiaz Noor Bhatti,R. Rawat,A. Banerjee,A. K. Pramanik###
(1440131, 1440131)
 The electronic transport can be described with Motts<missing VAR>two-dimensional variable range hopping (VR<missing VAR>H) mechanism, however, threedifferent temperature ranges are found for VR<missing VAR>H, which is a result of varyinglocalization length with temperature.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 240, 'K', 4],[146.0, 100, 'K', 3],[99.0, 100, 'K', 2]

C
###Determination of the Fermi Contour and Spin-polarization of $ν=3/2$ Composite Fermions via Ballistic Commensurability Measurements|D. Kamburov,M. A. Mueed,I. Jo,Yang Liu,M. Shayegan,L. N. Pfeiffer,K. W. West,K. W. Baldwin,J. J. D. Lee###
(1440314, 1440314)
 We report ballistic transport commensurability minima in themagnetoresistance of nu 3/2 composite fermions (CFs).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 2, ',', 2],[234.0, -2, ',', 4],[252.0, 30, 'to', 4],[253.0, 60, 'nm', 4]

C
###Determination of the Fermi Contour and Spin-polarization of $ν=3/2$ Composite Fermions via Ballistic Commensurability Measurements|D. Kamburov,M. A. Mueed,I. Jo,Yang Liu,M. Shayegan,L. N. Pfeiffer,K. W. West,K. W. Baldwin,J. J. D. Lee###
(1440321, 1440321)
 The CFs are formed inhigh-quality two-dimensional electron systems confined to wide GaAs quantumwells and subjected to an in-plane, unidirectional periodic potentialmodulation.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 2, ',', 1],[227.0, -2, ',', 3],[245.0, 30, 'to', 3],[246.0, 60, 'nm', 3]

GaAs
###Determination of the Fermi Contour and Spin-polarization of $ν=3/2$ Composite Fermions via Ballistic Commensurability Measurements|D. Kamburov,M. A. Mueed,I. Jo,Yang Liu,M. Shayegan,L. N. Pfeiffer,K. W. West,K. W. Baldwin,J. J. D. Lee###
(1440349, 1440350)
 The CFs are formed inhigh-quality two-dimensional electron systems confined to wide GaAs quantumwells and subjected to an in-plane, unidirectional periodic potentialmodulation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 2, ',', 1],[198.0, -2, ',', 3],[216.0, 30, 'to', 3],[217.0, 60, 'nm', 3]

CF
###Determination of the Fermi Contour and Spin-polarization of $ν=3/2$ Composite Fermions via Ballistic Commensurability Measurements|D. Kamburov,M. A. Mueed,I. Jo,Yang Liu,M. Shayegan,L. N. Pfeiffer,K. W. West,K. W. Baldwin,J. J. D. Lee###
(1440394, 1440395)
 We observe a slight asymmetry of the CF commensurability positionswith respect to nu3/2, which we explain quantitatively by comparing threeCF density models and concluding that the nu3/2 CFs are likely formed bythe minority carriers in the upper energy spin state of the lowest Landaulevel.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 2, ',', 0],[153.0, -2, ',', 2],[171.0, 30, 'to', 2],[172.0, 60, 'nm', 2]

CF
###Determination of the Fermi Contour and Spin-polarization of $ν=3/2$ Composite Fermions via Ballistic Commensurability Measurements|D. Kamburov,M. A. Mueed,I. Jo,Yang Liu,M. Shayegan,L. N. Pfeiffer,K. W. West,K. W. Baldwin,J. J. D. Lee###
(1440429, 1440430)
 We observe a slight asymmetry of the CF commensurability positionswith respect to nu3/2, which we explain quantitatively by comparing threeCF density models and concluding that the nu3/2 CFs are likely formed bythe minority carriers in the upper energy spin state of the lowest Landaulevel.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 2, ',', 0],[118.0, -2, ',', 2],[136.0, 30, 'to', 2],[137.0, 60, 'nm', 2]

C
###Determination of the Fermi Contour and Spin-polarization of $ν=3/2$ Composite Fermions via Ballistic Commensurability Measurements|D. Kamburov,M. A. Mueed,I. Jo,Yang Liu,M. Shayegan,L. N. Pfeiffer,K. W. West,K. W. Baldwin,J. J. D. Lee###
(1440449, 1440449)
 We observe a slight asymmetry of the CF commensurability positionswith respect to nu3/2, which we explain quantitatively by comparing threeCF density models and concluding that the nu3/2 CFs are likely formed bythe minority carriers in the upper energy spin state of the lowest Landaulevel.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 2, ',', 0],[99.0, -2, ',', 2],[117.0, 30, 'to', 2],[118.0, 60, 'nm', 2]

CF
###Determination of the Fermi Contour and Spin-polarization of $ν=3/2$ Composite Fermions via Ballistic Commensurability Measurements|D. Kamburov,M. A. Mueed,I. Jo,Yang Liu,M. Shayegan,L. N. Pfeiffer,K. W. West,K. W. Baldwin,J. J. D. Lee###
(1440517, 1440518)
 Our data also allow us to probe the shape and size of the CF Fermicontour.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 2, ',', 1],[30.0, -2, ',', 1],[48.0, 30, 'to', 1],[49.0, 60, 'nm', 1]

At
###Determination of the Fermi Contour and Spin-polarization of $ν=3/2$ Composite Fermions via Ballistic Commensurability Measurements|D. Kamburov,M. A. Mueed,I. Jo,Yang Liu,M. Shayegan,L. N. Pfeiffer,K. W. West,K. W. Baldwin,J. J. D. Lee###
(1440526, 1440526)
 At a fixed electron density of simeq 1.8 times 1011 cm-2,as the quantum well width increases from 30 to 60 nm, the CFs show increasingspin-polarization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 2, ',', 2],[22.0, -2, ',', 0],[40.0, 30, 'to', 0],[41.0, 60, 'nm', 0]

C
###Determination of the Fermi Contour and Spin-polarization of $ν=3/2$ Composite Fermions via Ballistic Commensurability Measurements|D. Kamburov,M. A. Mueed,I. Jo,Yang Liu,M. Shayegan,L. N. Pfeiffer,K. W. West,K. W. Baldwin,J. J. D. Lee###
(1440572, 1440572)
 At a fixed electron density of simeq 1.8 times 1011 cm-2,as the quantum well width increases from 30 to 60 nm, the CFs show increasingspin-polarization.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 2, ',', 2],[24.0, -2, ',', 0],[6.0, 30, 'to', 0],[5.0, 60, 'nm', 0]

(B)
###Determination of the Fermi Contour and Spin-polarization of $ν=3/2$ Composite Fermions via Ballistic Commensurability Measurements|D. Kamburov,M. A. Mueed,I. Jo,Yang Liu,M. Shayegan,L. N. Pfeiffer,K. W. West,K. W. Baldwin,J. J. D. Lee###
(1440665, 1440667)
 The application of anadditional parallel magnetic field (B) leads to a significant distortionof the CF Fermi contour as B couples to the CFs out-of-plane orbitalmotion.
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[254.0, 2, ',', 4],[117.0, -2, ',', 2],[99.0, 30, 'to', 2],[98.0, 60, 'nm', 2]

CF
###Determination of the Fermi Contour and Spin-polarization of $ν=3/2$ Composite Fermions via Ballistic Commensurability Measurements|D. Kamburov,M. A. Mueed,I. Jo,Yang Liu,M. Shayegan,L. N. Pfeiffer,K. W. West,K. W. Baldwin,J. J. D. Lee###
(1440684, 1440685)
 The application of anadditional parallel magnetic field (B) leads to a significant distortionof the CF Fermi contour as B couples to the CFs out-of-plane orbitalmotion.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[273.0, 2, ',', 4],[136.0, -2, ',', 2],[118.0, 30, 'to', 2],[117.0, 60, 'nm', 2]

B
###Determination of the Fermi Contour and Spin-polarization of $ν=3/2$ Composite Fermions via Ballistic Commensurability Measurements|D. Kamburov,M. A. Mueed,I. Jo,Yang Liu,M. Shayegan,L. N. Pfeiffer,K. W. West,K. W. Baldwin,J. J. D. Lee###
(1440693, 1440693)
 The application of anadditional parallel magnetic field (B) leads to a significant distortionof the CF Fermi contour as B couples to the CFs out-of-plane orbitalmotion.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[282.0, 2, ',', 4],[145.0, -2, ',', 2],[127.0, 30, 'to', 2],[126.0, 60, 'nm', 2]

C
###Determination of the Fermi Contour and Spin-polarization of $ν=3/2$ Composite Fermions via Ballistic Commensurability Measurements|D. Kamburov,M. A. Mueed,I. Jo,Yang Liu,M. Shayegan,L. N. Pfeiffer,K. W. West,K. W. Baldwin,J. J. D. Lee###
(1440701, 1440701)
 The application of anadditional parallel magnetic field (B) leads to a significant distortionof the CF Fermi contour as B couples to the CFs out-of-plane orbitalmotion.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[290.0, 2, ',', 4],[153.0, -2, ',', 2],[135.0, 30, 'to', 2],[134.0, 60, 'nm', 2]

CF
###Determination of the Fermi Contour and Spin-polarization of $ν=3/2$ Composite Fermions via Ballistic Commensurability Measurements|D. Kamburov,M. A. Mueed,I. Jo,Yang Liu,M. Shayegan,L. N. Pfeiffer,K. W. West,K. W. Baldwin,J. J. D. Lee###
(1440739, 1440740)
 The distortion is much more severe compared to the nu1/2 CF case atcomparable B.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[328.0, 2, ',', 5],[191.0, -2, ',', 3],[173.0, 30, 'to', 3],[172.0, 60, 'nm', 3]

B
###Determination of the Fermi Contour and Spin-polarization of $ν=3/2$ Composite Fermions via Ballistic Commensurability Measurements|D. Kamburov,M. A. Mueed,I. Jo,Yang Liu,M. Shayegan,L. N. Pfeiffer,K. W. West,K. W. Baldwin,J. J. D. Lee###
(1440749, 1440749)
 The distortion is much more severe compared to the nu1/2 CF case atcomparable B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[338.0, 2, ',', 5],[201.0, -2, ',', 3],[183.0, 30, 'to', 3],[182.0, 60, 'nm', 3]

B
###Determination of the Fermi Contour and Spin-polarization of $ν=3/2$ Composite Fermions via Ballistic Commensurability Measurements|D. Kamburov,M. A. Mueed,I. Jo,Yang Liu,M. Shayegan,L. N. Pfeiffer,K. W. West,K. W. Baldwin,J. J. D. Lee###
(1440759, 1440759)
 Moreover, the applied B further spin-polarizes thenu3/2 CFs as deduced from the positions of the commensurability minima.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[348.0, 2, ',', 6],[211.0, -2, ',', 4],[193.0, 30, 'to', 4],[192.0, 60, 'nm', 4]

C
###Determination of the Fermi Contour and Spin-polarization of $ν=3/2$ Composite Fermions via Ballistic Commensurability Measurements|D. Kamburov,M. A. Mueed,I. Jo,Yang Liu,M. Shayegan,L. N. Pfeiffer,K. W. West,K. W. Baldwin,J. J. D. Lee###
(1440775, 1440775)
 Moreover, the applied B further spin-polarizes thenu3/2 CFs as deduced from the positions of the commensurability minima.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[364.0, 2, ',', 6],[227.0, -2, ',', 4],[209.0, 30, 'to', 4],[208.0, 60, 'nm', 4]

ErRuSi
###Experimental and theoretical investigations on magnetic and related properties of ErRuSi|Sachin Gupta,A. Das,K. G. Suresh,A. Hoser,Yu. V. Knyazev,Yu. I. Kuz'min,A. V. Lukoyanov###
(1440825, 1440827)
Experimental and theoretical investigations on magnetic and related properties of ErRuSi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[189.0, 4.7, 'K', 5],[236.0, 8, 'K', 6],[323.0, 4, 'f', 8]

ErRuSi
###Experimental and theoretical investigations on magnetic and related properties of ErRuSi|Sachin Gupta,A. Das,K. G. Suresh,A. Hoser,Yu. V. Knyazev,Yu. I. Kuz'min,A. V. Lukoyanov###
(1440855, 1440857)
 We report experimental and theoretical studies of magnetic and relatedproperties of ErRuSi compound.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[159.0, 4.7, 'K', 4],[206.0, 8, 'K', 5],[293.0, 4, 'f', 7]

Er
###Experimental and theoretical investigations on magnetic and related properties of ErRuSi|Sachin Gupta,A. Das,K. G. Suresh,A. Hoser,Yu. V. Knyazev,Yu. I. Kuz'min,A. V. Lukoyanov###
(1441156, 1441156)
 The electronic structurecalculations accounting for electronic correlations of the 4f electrons of Erreproduces the ferromagnetic ordering and effective magnetic moment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 4.7, 'K', 3],[93.0, 8, 'K', 2],[6.0, 4, 'f', 0]

Ru
###Experimental and theoretical investigations on magnetic and related properties of ErRuSi|Sachin Gupta,A. Das,K. G. Suresh,A. Hoser,Yu. V. Knyazev,Yu. I. Kuz'min,A. V. Lukoyanov###
(1441185, 1441185)
 Interbandtransitions between the Ru and Er d<missing VAR> states and Er f<missing VAR> states in one spinprojection are found to form the main features of the measured opticalconductivity in this compound.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 4.7, 'K', 4],[122.0, 8, 'K', 3],[35.0, 4, 'f', 1]

Er
###Experimental and theoretical investigations on magnetic and related properties of ErRuSi|Sachin Gupta,A. Das,K. G. Suresh,A. Hoser,Yu. V. Knyazev,Yu. I. Kuz'min,A. V. Lukoyanov###
(1441189, 1441189)
 Interbandtransitions between the Ru and Er d<missing VAR> states and Er f<missing VAR> states in one spinprojection are found to form the main features of the measured opticalconductivity in this compound.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 4.7, 'K', 4],[126.0, 8, 'K', 3],[39.0, 4, 'f', 1]

Er
###Experimental and theoretical investigations on magnetic and related properties of ErRuSi|Sachin Gupta,A. Das,K. G. Suresh,A. Hoser,Yu. V. Knyazev,Yu. I. Kuz'min,A. V. Lukoyanov###
(1441197, 1441197)
 Interbandtransitions between the Ru and Er d<missing VAR> states and Er f<missing VAR> states in one spinprojection are found to form the main features of the measured opticalconductivity in this compound.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 4.7, 'K', 4],[134.0, 8, 'K', 3],[47.0, 4, 'f', 1]

Cd3As2
###Anisotropic Fermi Surface and Quantum Limit Transport in High Mobility 3D Dirac Semimetal Cd3As2|Yanfei Zhao,Haiwen Liu,Chenglong Zhang,Huichao Wang,Junfeng Wang,Ziquan Lin,Ying Xing,Hong Lu,Jun Liu,Yong Wang,Shuang Jia,X. C. Xie,Jian Wang###
(1441277, 1441280)
Anisotropic Fermi Surface and Quantum Limit Transport in High Mobility 3D Dirac Semimetal Cd3As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 3, 'D', 0],[41.0, 3, 'D', 1],[61.0, 3, 'D', 1],[269.0, 3, 'D', 5],[311.0, 6, 'K', 6],[357.0, 60, 'T', 7],[374.0, 1, 'Landau', 7],[382.0, 43, 'T', 7],[436.0, 3, 'D', 8]

Cd3As2
###Anisotropic Fermi Surface and Quantum Limit Transport in High Mobility 3D Dirac Semimetal Cd3As2|Yanfei Zhao,Haiwen Liu,Chenglong Zhang,Huichao Wang,Junfeng Wang,Ziquan Lin,Ying Xing,Hong Lu,Jun Liu,Yong Wang,Shuang Jia,X. C. Xie,Jian Wang###
(1441366, 1441369)
 Here, we report the angular dependentmagnetotransport in Cd3As2 single crystal and clearly show how the Fermisurface evolves when tilting the magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 3, 'D', 2],[45.0, 3, 'D', 1],[25.0, 3, 'D', 1],[180.0, 3, 'D', 3],[222.0, 6, 'K', 4],[268.0, 60, 'T', 5],[285.0, 1, 'Landau', 5],[293.0, 43, 'T', 5],[347.0, 3, 'D', 6]

Cd3As2
###Anisotropic Fermi Surface and Quantum Limit Transport in High Mobility 3D Dirac Semimetal Cd3As2|Yanfei Zhao,Haiwen Liu,Chenglong Zhang,Huichao Wang,Junfeng Wang,Ziquan Lin,Ying Xing,Hong Lu,Jun Liu,Yong Wang,Shuang Jia,X. C. Xie,Jian Wang###
(1441600, 1441603)
 Additionally, a sub-millimeter mean free path at 6 K isobserved in Cd3As2 crystal, indicating a large ballistic transport region inthis material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[329.0, 3, 'D', 6],[279.0, 3, 'D', 5],[259.0, 3, 'D', 5],[51.0, 3, 'D', 1],[9.0, 6, 'K', 0],[34.0, 60, 'T', 1],[51.0, 1, 'Landau', 1],[59.0, 43, 'T', 1],[113.0, 3, 'D', 2]

Cd3As2
###Anisotropic Fermi Surface and Quantum Limit Transport in High Mobility 3D Dirac Semimetal Cd3As2|Yanfei Zhao,Haiwen Liu,Chenglong Zhang,Huichao Wang,Junfeng Wang,Ziquan Lin,Ying Xing,Hong Lu,Jun Liu,Yong Wang,Shuang Jia,X. C. Xie,Jian Wang###
(1441686, 1441689)
 These results improve theknowledge of the Dirac semimetal material Cd3As2, and also pave the way forproposing new electronic applications based on 3D Dirac materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[415.0, 3, 'D', 8],[365.0, 3, 'D', 7],[345.0, 3, 'D', 7],[137.0, 3, 'D', 3],[95.0, 6, 'K', 2],[49.0, 60, 'T', 1],[32.0, 1, 'Landau', 1],[24.0, 43, 'T', 1],[27.0, 3, 'D', 0]

La2-xSr
###Two-stage magnetic-field-tuned superconductor-insulator transition in underdoped La$_{2-x}$Sr$_{x}$CuO$_{4}$|Xiaoyan Shi,Ping V. Lin,T. Sasagawa,V. Dobrosavljević,Dragana Popović###
(1441751, 1441755)
Two-stage magnetic-field-tuned superconductor-insulator transition in underdoped La2-xSrx<missing VAR>CuO4.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

CuO4
###Two-stage magnetic-field-tuned superconductor-insulator transition in underdoped La$_{2-x}$Sr$_{x}$CuO$_{4}$|Xiaoyan Shi,Ping V. Lin,T. Sasagawa,V. Dobrosavljević,Dragana Popović###
(1441757, 1441759)
Two-stage magnetic-field-tuned superconductor-insulator transition in underdoped La2-xSrx<missing VAR>CuO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Two-stage magnetic-field-tuned superconductor-insulator transition in underdoped La$_{2-x}$Sr$_{x}$CuO$_{4}$|Xiaoyan Shi,Ping V. Lin,T. Sasagawa,V. Dobrosavljević,Dragana Popović###
(1441762, 1441762)
 In the underdoped pseudogap regime of cuprate superconductors, the normalstate is commonly probed by applying a magnetic field (H).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(H)
###Two-stage magnetic-field-tuned superconductor-insulator transition in underdoped La$_{2-x}$Sr$_{x}$CuO$_{4}$|Xiaoyan Shi,Ping V. Lin,T. Sasagawa,V. Dobrosavljević,Dragana Popović###
(1441802, 1441804)
 In the underdoped pseudogap regime of cuprate superconductors, the normalstate is commonly probed by applying a magnetic field (H).
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Two-stage magnetic-field-tuned superconductor-insulator transition in underdoped La$_{2-x}$Sr$_{x}$CuO$_{4}$|Xiaoyan Shi,Ping V. Lin,T. Sasagawa,V. Dobrosavljević,Dragana Popović###
(1441819, 1441819)
 However, thenature of the H-induced resistive state has been the subject of a long-termdebate, and clear evidence for a zero-temperature (T<missing VAR>0) H-tunedsuperconductor-insulator transition (SIT) has proved elusive.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Two-stage magnetic-field-tuned superconductor-insulator transition in underdoped La$_{2-x}$Sr$_{x}$CuO$_{4}$|Xiaoyan Shi,Ping V. Lin,T. Sasagawa,V. Dobrosavljević,Dragana Popović###
(1441866, 1441866)
 However, thenature of the H-induced resistive state has been the subject of a long-termdebate, and clear evidence for a zero-temperature (T<missing VAR>0) H-tunedsuperconductor-insulator transition (SIT) has proved elusive.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SI
###Two-stage magnetic-field-tuned superconductor-insulator transition in underdoped La$_{2-x}$Sr$_{x}$CuO$_{4}$|Xiaoyan Shi,Ping V. Lin,T. Sasagawa,V. Dobrosavljević,Dragana Popović###
(1441878, 1441879)
 However, thenature of the H-induced resistive state has been the subject of a long-termdebate, and clear evidence for a zero-temperature (T<missing VAR>0) H-tunedsuperconductor-insulator transition (SIT) has proved elusive.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La2-xSr
###Two-stage magnetic-field-tuned superconductor-insulator transition in underdoped La$_{2-x}$Sr$_{x}$CuO$_{4}$|Xiaoyan Shi,Ping V. Lin,T. Sasagawa,V. Dobrosavljević,Dragana Popović###
(1441905, 1441909)
 Here we reportmagnetoresistance measurements in underdoped La2-xSrx<missing VAR>CuO4,providing striking evidence for quantum critical behavior of the resistivity --the signature of a H-driven SIT<missing VAR>.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

CuO4
###Two-stage magnetic-field-tuned superconductor-insulator transition in underdoped La$_{2-x}$Sr$_{x}$CuO$_{4}$|Xiaoyan Shi,Ping V. Lin,T. Sasagawa,V. Dobrosavljević,Dragana Popović###
(1441911, 1441913)
 Here we reportmagnetoresistance measurements in underdoped La2-xSrx<missing VAR>CuO4,providing striking evidence for quantum critical behavior of the resistivity --the signature of a H-driven SIT<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Two-stage magnetic-field-tuned superconductor-insulator transition in underdoped La$_{2-x}$Sr$_{x}$CuO$_{4}$|Xiaoyan Shi,Ping V. Lin,T. Sasagawa,V. Dobrosavljević,Dragana Popović###
(1441949, 1441949)
 Here we reportmagnetoresistance measurements in underdoped La2-xSrx<missing VAR>CuO4,providing striking evidence for quantum critical behavior of the resistivity --the signature of a H-driven SIT<missing VAR>.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SI
###Two-stage magnetic-field-tuned superconductor-insulator transition in underdoped La$_{2-x}$Sr$_{x}$CuO$_{4}$|Xiaoyan Shi,Ping V. Lin,T. Sasagawa,V. Dobrosavljević,Dragana Popović###
(1441953, 1441954)
 Here we reportmagnetoresistance measurements in underdoped La2-xSrx<missing VAR>CuO4,providing striking evidence for quantum critical behavior of the resistivity --the signature of a H-driven SIT<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Two-stage magnetic-field-tuned superconductor-insulator transition in underdoped La$_{2-x}$Sr$_{x}$CuO$_{4}$|Xiaoyan Shi,Ping V. Lin,T. Sasagawa,V. Dobrosavljević,Dragana Popović###
(1442019, 1442019)
 Our finding of a two-stage H-driven SIT<missing VAR> goesbeyond the conventional scenario in which a single quantum critical pointseparates the superconductor and the insulator in the presence of aperpendicular H.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SI
###Two-stage magnetic-field-tuned superconductor-insulator transition in underdoped La$_{2-x}$Sr$_{x}$CuO$_{4}$|Xiaoyan Shi,Ping V. Lin,T. Sasagawa,V. Dobrosavljević,Dragana Popović###
(1442023, 1442024)
 Our finding of a two-stage H-driven SIT<missing VAR> goesbeyond the conventional scenario in which a single quantum critical pointseparates the superconductor and the insulator in the presence of aperpendicular H.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Two-stage magnetic-field-tuned superconductor-insulator transition in underdoped La$_{2-x}$Sr$_{x}$CuO$_{4}$|Xiaoyan Shi,Ping V. Lin,T. Sasagawa,V. Dobrosavljević,Dragana Popović###
(1442078, 1442078)
 Our finding of a two-stage H-driven SIT<missing VAR> goesbeyond the conventional scenario in which a single quantum critical pointseparates the superconductor and the insulator in the presence of aperpendicular H.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Two-stage magnetic-field-tuned superconductor-insulator transition in underdoped La$_{2-x}$Sr$_{x}$CuO$_{4}$|Xiaoyan Shi,Ping V. Lin,T. Sasagawa,V. Dobrosavljević,Dragana Popović###
(1442087, 1442087)
 Similar two-stage H-driven SIT<missing VAR>, in which both disorder andquantum phase fluctuations play an important role, may also be expected inother copper-oxide high-temperature superconductors.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SI
###Two-stage magnetic-field-tuned superconductor-insulator transition in underdoped La$_{2-x}$Sr$_{x}$CuO$_{4}$|Xiaoyan Shi,Ping V. Lin,T. Sasagawa,V. Dobrosavljević,Dragana Popović###
(1442091, 1442092)
 Similar two-stage H-driven SIT<missing VAR>, in which both disorder andquantum phase fluctuations play an important role, may also be expected inother copper-oxide high-temperature superconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cd3As2
###Gate-tunable quantum oscillations in ambipolar Cd3As2 thin films|Yanwen Liu,Cheng Zhang,Xiang Yuan,Tang Lei,Chao Wang,Domenico Di Sante,Awadhesh Narayan,Liang He,Silvia Picozzi,Stefano Sanvito,Renchao Che,Faxian Xiu###
(1442166, 1442169)
Gate-tunable quantum oscillations in ambipolar Cd3As2 thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 3, 'D', 2],[290.0, 50, 'nm', 5]

Cd3As2
###Gate-tunable quantum oscillations in ambipolar Cd3As2 thin films|Yanwen Liu,Cheng Zhang,Xiang Yuan,Tang Lei,Chao Wang,Domenico Di Sante,Awadhesh Narayan,Liang He,Silvia Picozzi,Stefano Sanvito,Renchao Che,Faxian Xiu###
(1442237, 1442240)
 Cd3As2, athree-dimensional (3D) analog of graphene with extraordinary carrier mobility,was predicted to be a 3D Dirac semimetal, a feature confirmed by recentexperiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 3, 'D', 0],[219.0, 50, 'nm', 3]

Cd3As2
###Gate-tunable quantum oscillations in ambipolar Cd3As2 thin films|Yanwen Liu,Cheng Zhang,Xiang Yuan,Tang Lei,Chao Wang,Domenico Di Sante,Awadhesh Narayan,Liang He,Silvia Picozzi,Stefano Sanvito,Renchao Che,Faxian Xiu###
(1442406, 1442409)
 Here, we report onthe first observation of a gate-induced transition from band conduction tohopping conduction in single-crystalline Cd3As2 thin films via electrostaticdoping by solid electrolyte gating.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 3, 'D', 2],[50.0, 50, 'nm', 1]

Cd3As2
###Gate-tunable quantum oscillations in ambipolar Cd3As2 thin films|Yanwen Liu,Cheng Zhang,Xiang Yuan,Tang Lei,Chao Wang,Domenico Di Sante,Awadhesh Narayan,Liang He,Silvia Picozzi,Stefano Sanvito,Renchao Che,Faxian Xiu###
(1442463, 1442466)
 The extreme charge doping enables theunexpected observation of p<missing VAR>-type conductivity in a 50 nm-thick Cd3As2 thin filmgrown by molecular beam epitaxy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[183.0, 3, 'D', 3],[4.0, 50, 'nm', 0]

H
###Gate-tunable quantum oscillations in ambipolar Cd3As2 thin films|Yanwen Liu,Cheng Zhang,Xiang Yuan,Tang Lei,Chao Wang,Domenico Di Sante,Awadhesh Narayan,Liang He,Silvia Picozzi,Stefano Sanvito,Renchao Che,Faxian Xiu###
(1442504, 1442504)
 More importantly, the gate-tunableShubnikov-de Haas (SdH) oscillations and the temperature-dependent resistancereveal a unique band structure and bandgap opening when the dimensionality ofCd3As2 is reduced.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[224.0, 3, 'D', 4],[45.0, 50, 'nm', 1]

Cd3As2
###Gate-tunable quantum oscillations in ambipolar Cd3As2 thin films|Yanwen Liu,Cheng Zhang,Xiang Yuan,Tang Lei,Chao Wang,Domenico Di Sante,Awadhesh Narayan,Liang He,Silvia Picozzi,Stefano Sanvito,Renchao Che,Faxian Xiu###
(1442545, 1442548)
 More importantly, the gate-tunableShubnikov-de Haas (SdH) oscillations and the temperature-dependent resistancereveal a unique band structure and bandgap opening when the dimensionality ofCd3As2 is reduced.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[265.0, 3, 'D', 4],[86.0, 50, 'nm', 1]

In
###Magnetoresistance near a quantum critical point|I. M. Hayes,Nicholas P. Breznay,Toni Helm,Philip Moll,Mark Wartenbe,Ross D. McDonald,Arkady Shekhter,James G. Analytis###
(1442695, 1442695)
 In metals near a quantum critical point, the electrical resistance is thoughtto be determined by the lifetime of the carriers of current, rather than thescattering from defects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe2
###Magnetoresistance near a quantum critical point|I. M. Hayes,Nicholas P. Breznay,Toni Helm,Philip Moll,Mark Wartenbe,Ross D. McDonald,Arkady Shekhter,James G. Analytis###
(1442864, 1442865)
 Our datasuggest that this concept extends to the magnetic field dependence of theresistivity in the unconventional superconductorBaFe2(As1-xPx)2 near its quantum critical point.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As1-xP
###Magnetoresistance near a quantum critical point|I. M. Hayes,Nicholas P. Breznay,Toni Helm,Philip Moll,Mark Wartenbe,Ross D. McDonald,Arkady Shekhter,James G. Analytis###
(1442867, 1442871)
 Our datasuggest that this concept extends to the magnetic field dependence of theresistivity in the unconventional superconductorBaFe2(As1-xPx)2 near its quantum critical point.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

B
###Magnetoresistance near a quantum critical point|I. M. Hayes,Nicholas P. Breznay,Toni Helm,Philip Moll,Mark Wartenbe,Ross D. McDonald,Arkady Shekhter,James G. Analytis###
(1442943, 1442943)
 We find thatthe lifetime depends on magnetic field in the same way as it depends ontemperature, scaled by the ratio of two fundamental constants muB/k<missing VAR>B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Magnetoresistance near a quantum critical point|I. M. Hayes,Nicholas P. Breznay,Toni Helm,Philip Moll,Mark Wartenbe,Ross D. McDonald,Arkady Shekhter,James G. Analytis###
(1442946, 1442946)
 We find thatthe lifetime depends on magnetic field in the same way as it depends ontemperature, scaled by the ratio of two fundamental constants muB/k<missing VAR>B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZrTe5
###Observation of the chiral magnetic effect in ZrTe5|Qiang Li,Dmitri E. Kharzeev,Cheng Zhang,Yuan Huang,I. Pletikosic,A. V. Fedorov,R. D. Zhong,J. A. Schneeloch,G. D. Gu,T. Valla###
(1443131, 1443133)
Observation of the chiral magnetic effect in ZrTe5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[274.0, 3, 'D', 5]

ZrTe5
###Observation of the chiral magnetic effect in ZrTe5|Qiang Li,Dmitri E. Kharzeev,Cheng Zhang,Yuan Huang,I. Pletikosic,A. V. Fedorov,R. D. Zhong,J. A. Schneeloch,G. D. Gu,T. Valla###
(1443368, 1443370)
 Here we report on the firstobservation of chiral magnetic effect through the measurement ofmagneto-transport in zirconium pentatelluride, ZrTe5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 3, 'D', 1]

As
###Angle dependence of the orbital magnetoresistance in bismuth|Aurelie Collaudin,Benoit Fauque,Yuki Fuseya,Woun Kang,Kamran Behnia###
(1443732, 1443732)
 As Hartman arguedlong ago, this indicates that inelastic resistivity in bismuth is dominated bycarrier-carrier scattering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Angle dependence of the orbital magnetoresistance in bismuth|Aurelie Collaudin,Benoit Fauque,Yuki Fuseya,Woun Kang,Kamran Behnia###
(1443772, 1443772)
 At low temperature and high magnetic field, thethreefold symmetry of the lattice is suddenly lost.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Angle dependence of the orbital magnetoresistance in bismuth|Aurelie Collaudin,Benoit Fauque,Yuki Fuseya,Woun Kang,Kamran Behnia###
(1443924, 1443924)
 In the less-symmetric state, confined to low temperature and highmagnetic field, the three Dirac valleys cease to be rotationally invariant.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###State of Co and Mn in half-metallic ferromagnet Co$_2$MnSi explored by magnetic circular dichroism in hard X-ray photoelectron emission and soft X-ray absorption spectroscopies|Gerhard H. Fecher,Daniel Ebke,Siham Ouardi,Stefano Agrestini,Chang-Yang Kuo,Nils Hollmann,Zhiwei Hu,Andrei Gloskovskii,Flora Yakhou,Nicholas B. Brookes,Claudia Felser###
(1444018, 1444018)
State of Co and Mn in half-metallic ferromagnet Co2MnSi explored by magnetic circular dichroism in hard X<missing VAR>-ray photoelectron emission and soft X<missing VAR>-ray absorption spectroscopies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###State of Co and Mn in half-metallic ferromagnet Co$_2$MnSi explored by magnetic circular dichroism in hard X-ray photoelectron emission and soft X-ray absorption spectroscopies|Gerhard H. Fecher,Daniel Ebke,Siham Ouardi,Stefano Agrestini,Chang-Yang Kuo,Nils Hollmann,Zhiwei Hu,Andrei Gloskovskii,Flora Yakhou,Nicholas B. Brookes,Claudia Felser###
(1444022, 1444022)
State of Co and Mn in half-metallic ferromagnet Co2MnSi explored by magnetic circular dichroism in hard X<missing VAR>-ray photoelectron emission and soft X<missing VAR>-ray absorption spectroscopies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co2MnSi
###State of Co and Mn in half-metallic ferromagnet Co$_2$MnSi explored by magnetic circular dichroism in hard X-ray photoelectron emission and soft X-ray absorption spectroscopies|Gerhard H. Fecher,Daniel Ebke,Siham Ouardi,Stefano Agrestini,Chang-Yang Kuo,Nils Hollmann,Zhiwei Hu,Andrei Gloskovskii,Flora Yakhou,Nicholas B. Brookes,Claudia Felser###
(1444032, 1444035)
State of Co and Mn in half-metallic ferromagnet Co2MnSi explored by magnetic circular dichroism in hard X<missing VAR>-ray photoelectron emission and soft X<missing VAR>-ray absorption spectroscopies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co2MnSi
###State of Co and Mn in half-metallic ferromagnet Co$_2$MnSi explored by magnetic circular dichroism in hard X-ray photoelectron emission and soft X-ray absorption spectroscopies|Gerhard H. Fecher,Daniel Ebke,Siham Ouardi,Stefano Agrestini,Chang-Yang Kuo,Nils Hollmann,Zhiwei Hu,Andrei Gloskovskii,Flora Yakhou,Nicholas B. Brookes,Claudia Felser###
(1444082, 1444085)
 The half-metallic Heusler compound Co2MnSi is a very attractive materialfor spintronic devices because it exhibits very high tunnellingmagnetoresistance ratios.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co2MnSi
###State of Co and Mn in half-metallic ferromagnet Co$_2$MnSi explored by magnetic circular dichroism in hard X-ray photoelectron emission and soft X-ray absorption spectroscopies|Gerhard H. Fecher,Daniel Ebke,Siham Ouardi,Stefano Agrestini,Chang-Yang Kuo,Nils Hollmann,Zhiwei Hu,Andrei Gloskovskii,Flora Yakhou,Nicholas B. Brookes,Claudia Felser###
(1444141, 1444144)
 This work reports on a spectroscopic investigation ofthin Co2MnSi films as they are used as electrodes in magnetic tunneljunctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###State of Co and Mn in half-metallic ferromagnet Co$_2$MnSi explored by magnetic circular dichroism in hard X-ray photoelectron emission and soft X-ray absorption spectroscopies|Gerhard H. Fecher,Daniel Ebke,Siham Ouardi,Stefano Agrestini,Chang-Yang Kuo,Nils Hollmann,Zhiwei Hu,Andrei Gloskovskii,Flora Yakhou,Nicholas B. Brookes,Claudia Felser###
(1444203, 1444203)
 The investigated films exhibit a remanent in-plane magnetisationwith a magnetic moment of about 5muB when saturated, as expected.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###State of Co and Mn in half-metallic ferromagnet Co$_2$MnSi explored by magnetic circular dichroism in hard X-ray photoelectron emission and soft X-ray absorption spectroscopies|Gerhard H. Fecher,Daniel Ebke,Siham Ouardi,Stefano Agrestini,Chang-Yang Kuo,Nils Hollmann,Zhiwei Hu,Andrei Gloskovskii,Flora Yakhou,Nicholas B. Brookes,Claudia Felser###
(1444262, 1444262)
 Magneticdichroism in emission and absorption was measured at the Co and Mn 2p<missing VAR> corelevels.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###State of Co and Mn in half-metallic ferromagnet Co$_2$MnSi explored by magnetic circular dichroism in hard X-ray photoelectron emission and soft X-ray absorption spectroscopies|Gerhard H. Fecher,Daniel Ebke,Siham Ouardi,Stefano Agrestini,Chang-Yang Kuo,Nils Hollmann,Zhiwei Hu,Andrei Gloskovskii,Flora Yakhou,Nicholas B. Brookes,Claudia Felser###
(1444266, 1444266)
 Magneticdichroism in emission and absorption was measured at the Co and Mn 2p<missing VAR> corelevels.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###State of Co and Mn in half-metallic ferromagnet Co$_2$MnSi explored by magnetic circular dichroism in hard X-ray photoelectron emission and soft X-ray absorption spectroscopies|Gerhard H. Fecher,Daniel Ebke,Siham Ouardi,Stefano Agrestini,Chang-Yang Kuo,Nils Hollmann,Zhiwei Hu,Andrei Gloskovskii,Flora Yakhou,Nicholas B. Brookes,Claudia Felser###
(1444312, 1444312)
 The photoelectron spectra were excited by circularly polarised hardX<missing VAR>-rays with an energy of of 6keV and taken from the remanently magnetisedfilm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###State of Co and Mn in half-metallic ferromagnet Co$_2$MnSi explored by magnetic circular dichroism in hard X-ray photoelectron emission and soft X-ray absorption spectroscopies|Gerhard H. Fecher,Daniel Ebke,Siham Ouardi,Stefano Agrestini,Chang-Yang Kuo,Nils Hollmann,Zhiwei Hu,Andrei Gloskovskii,Flora Yakhou,Nicholas B. Brookes,Claudia Felser###
(1444405, 1444405)
 An analysis reveals thelocalised character of the electrons and magnetic moments attributed to the Mnatoms, whereas the electrons related to the Co atoms contribute an itinerantpart to the total magnetic moment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###State of Co and Mn in half-metallic ferromagnet Co$_2$MnSi explored by magnetic circular dichroism in hard X-ray photoelectron emission and soft X-ray absorption spectroscopies|Gerhard H. Fecher,Daniel Ebke,Siham Ouardi,Stefano Agrestini,Chang-Yang Kuo,Nils Hollmann,Zhiwei Hu,Andrei Gloskovskii,Flora Yakhou,Nicholas B. Brookes,Claudia Felser###
(1444423, 1444423)
 An analysis reveals thelocalised character of the electrons and magnetic moments attributed to the Mnatoms, whereas the electrons related to the Co atoms contribute an itinerantpart to the total magnetic moment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Tantalum Monoarsenide: an Exotic Compensated Semimetal|Chenglong Zhang,Zhujun Yuan,Suyang Xu,Ziquan Lin,Bingbing Tong,M. Zahid Hasan,Junfeng Wang,Chi Zhang,Shuang Jia###
(1444605, 1444605)
 Inthis letter for the first time we report the electric transport properties of arobust Weyl semimetal candidate proposed by recent theoretical calculations,TaAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 10, 'Kelvins', 1],[138.0, 9, 'Teslas', 1],[163.0, 56, 'Teslas', 1]

TaAs
###Tantalum Monoarsenide: an Exotic Compensated Semimetal|Chenglong Zhang,Zhujun Yuan,Suyang Xu,Ziquan Lin,Bingbing Tong,M. Zahid Hasan,Junfeng Wang,Chi Zhang,Shuang Jia###
(1444657, 1444658)
 Inthis letter for the first time we report the electric transport properties of arobust Weyl semimetal candidate proposed by recent theoretical calculations,TaAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 10, 'Kelvins', 1],[85.0, 9, 'Teslas', 1],[110.0, 56, 'Teslas', 1]

V
###Tantalum Monoarsenide: an Exotic Compensated Semimetal|Chenglong Zhang,Zhujun Yuan,Suyang Xu,Ziquan Lin,Bingbing Tong,M. Zahid Hasan,Junfeng Wang,Chi Zhang,Shuang Jia###
(1444694, 1444694)
 Our study shows that this bulk material manifests ultrahigh carriermobility (mathrm5times105 cm2/Vcdots) accompanied by an extremelylarge, unsaturated linear magnetoresistance (mathrmMR), which reaches 5400at 10 Kelvins in a magnetic field of 9 Teslas and 2.47times104 at 1.5Kelvins in a magnetic field of 56 Teslas.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 10, 'Kelvins', 0],[49.0, 9, 'Teslas', 0],[74.0, 56, 'Teslas', 0]

H
###Tantalum Monoarsenide: an Exotic Compensated Semimetal|Chenglong Zhang,Zhujun Yuan,Suyang Xu,Ziquan Lin,Bingbing Tong,M. Zahid Hasan,Junfeng Wang,Chi Zhang,Shuang Jia###
(1444788, 1444788)
 We also observed strong Shubnikov-deHaas (SdH) oscillations associated with an extremely low quantum limit (sim8Teslas).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 10, 'Kelvins', 1],[45.0, 9, 'Teslas', 1],[20.0, 56, 'Teslas', 1]

TaAs
###Tantalum Monoarsenide: an Exotic Compensated Semimetal|Chenglong Zhang,Zhujun Yuan,Suyang Xu,Ziquan Lin,Bingbing Tong,M. Zahid Hasan,Junfeng Wang,Chi Zhang,Shuang Jia###
(1444822, 1444823)
 Further studies on TaAs, especially in the ultraquantum limit regime,will help to extend the realization of the topological properties of theseexotic electrons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 10, 'Kelvins', 2],[79.0, 9, 'Teslas', 2],[54.0, 56, 'Teslas', 2]

Eu
###Enhanced conduction band density of states in intermetallic EuTSi$_3$ (T=Rh, Ir)|A. Maurya,P. Bonville,A. Thamizhavel,S. K. Dhar###
(1444894, 1444894)
Enhanced conduction band density of states in intermetallic EuT<missing VAR>Si3 (T<missing VAR>Rh, Ir).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 2, 'K', 3],[144.0, 13, 'T', 3],[217.0, 50, 'K', 4],[495.0, 2, 'K', 8],[505.0, 14, 'T', 8]

Si3
###Enhanced conduction band density of states in intermetallic EuTSi$_3$ (T=Rh, Ir)|A. Maurya,P. Bonville,A. Thamizhavel,S. K. Dhar###
(1444896, 1444897)
Enhanced conduction band density of states in intermetallic EuT<missing VAR>Si3 (T<missing VAR>Rh, Ir).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 2, 'K', 3],[141.0, 13, 'T', 3],[214.0, 50, 'K', 4],[492.0, 2, 'K', 8],[502.0, 14, 'T', 8]

Rh
###Enhanced conduction band density of states in intermetallic EuTSi$_3$ (T=Rh, Ir)|A. Maurya,P. Bonville,A. Thamizhavel,S. K. Dhar###
(1444901, 1444901)
Enhanced conduction band density of states in intermetallic EuT<missing VAR>Si3 (T<missing VAR>Rh, Ir).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 2, 'K', 3],[137.0, 13, 'T', 3],[210.0, 50, 'K', 4],[488.0, 2, 'K', 8],[498.0, 14, 'T', 8]

Ir
###Enhanced conduction band density of states in intermetallic EuTSi$_3$ (T=Rh, Ir)|A. Maurya,P. Bonville,A. Thamizhavel,S. K. Dhar###
(1444904, 1444904)
Enhanced conduction band density of states in intermetallic EuT<missing VAR>Si3 (T<missing VAR>Rh, Ir).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 2, 'K', 3],[134.0, 13, 'T', 3],[207.0, 50, 'K', 4],[485.0, 2, 'K', 8],[495.0, 14, 'T', 8]

EuRhSi3
###Enhanced conduction band density of states in intermetallic EuTSi$_3$ (T=Rh, Ir)|A. Maurya,P. Bonville,A. Thamizhavel,S. K. Dhar###
(1444926, 1444929)
 We report on the physical properties of single crystalline EuRhSi3 andpolycrystalline EuIrSi3, inferred from magnetisation, electrical transport,heat capacity and 151Eu M<missing VAR>ossbauer spectroscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 2, 'K', 2],[109.0, 13, 'T', 2],[182.0, 50, 'K', 3],[460.0, 2, 'K', 7],[470.0, 14, 'T', 7]

EuIrSi3
###Enhanced conduction band density of states in intermetallic EuTSi$_3$ (T=Rh, Ir)|A. Maurya,P. Bonville,A. Thamizhavel,S. K. Dhar###
(1444936, 1444939)
 We report on the physical properties of single crystalline EuRhSi3 andpolycrystalline EuIrSi3, inferred from magnetisation, electrical transport,heat capacity and 151Eu M<missing VAR>ossbauer spectroscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 2, 'K', 2],[99.0, 13, 'T', 2],[172.0, 50, 'K', 3],[450.0, 2, 'K', 7],[460.0, 14, 'T', 7]

Eu
###Enhanced conduction band density of states in intermetallic EuTSi$_3$ (T=Rh, Ir)|A. Maurya,P. Bonville,A. Thamizhavel,S. K. Dhar###
(1444962, 1444962)
 We report on the physical properties of single crystalline EuRhSi3 andpolycrystalline EuIrSi3, inferred from magnetisation, electrical transport,heat capacity and 151Eu M<missing VAR>ossbauer spectroscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 2, 'K', 2],[76.0, 13, 'T', 2],[149.0, 50, 'K', 3],[427.0, 2, 'K', 7],[437.0, 14, 'T', 7]

BaNiSn3
###Enhanced conduction band density of states in intermetallic EuTSi$_3$ (T=Rh, Ir)|A. Maurya,P. Bonville,A. Thamizhavel,S. K. Dhar###
(1444987, 1444990)
 These previously knowncompounds crystallise in the tetragonal BaNiSn3-type structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 2, 'K', 1],[48.0, 13, 'T', 1],[121.0, 50, 'K', 2],[399.0, 2, 'K', 6],[409.0, 14, 'T', 6]

EuRhSi3
###Enhanced conduction band density of states in intermetallic EuTSi$_3$ (T=Rh, Ir)|A. Maurya,P. Bonville,A. Thamizhavel,S. K. Dhar###
(1445008, 1445011)
 The singlecrystal magnetisation in EuRhSi3 has a strongly anisotropic behaviour at 2 Kwith a spin-flop field of 13 T, and we present a model of these magneticproperties which allows the exchange constants to be determined.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 2, 'K', 0],[27.0, 13, 'T', 0],[100.0, 50, 'K', 1],[378.0, 2, 'K', 5],[388.0, 14, 'T', 5]

In
###Enhanced conduction band density of states in intermetallic EuTSi$_3$ (T=Rh, Ir)|A. Maurya,P. Bonville,A. Thamizhavel,S. K. Dhar###
(1445077, 1445077)
 In bothcompounds, specific heat shows the presence of a cascade of two closetransitions near 50 K, and the 151Eu M<missing VAR>ossbauer spectra demonstrate thatthe intermediate phase has an incommensurate amplitude modulated structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 2, 'K', 1],[39.0, 13, 'T', 1],[34.0, 50, 'K', 0],[312.0, 2, 'K', 4],[322.0, 14, 'T', 4]

Eu
###Enhanced conduction band density of states in intermetallic EuTSi$_3$ (T=Rh, Ir)|A. Maurya,P. Bonville,A. Thamizhavel,S. K. Dhar###
(1445119, 1445119)
 In bothcompounds, specific heat shows the presence of a cascade of two closetransitions near 50 K, and the 151Eu M<missing VAR>ossbauer spectra demonstrate thatthe intermediate phase has an incommensurate amplitude modulated structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 2, 'K', 1],[81.0, 13, 'T', 1],[8.0, 50, 'K', 0],[270.0, 2, 'K', 4],[280.0, 14, 'T', 4]

KKY
###Enhanced conduction band density of states in intermetallic EuTSi$_3$ (T=Rh, Ir)|A. Maurya,P. Bonville,A. Thamizhavel,S. K. Dhar###
(1445185, 1445187)
 Wefind anomalously large values, with respect to other members of the series, forthe R<missing VAR>KKY Neel temperature, for the spin-flop field (13 T), for the spin-wavegap (simeq 20-25 K) inferred from both resistivity and specific heat data,for the spin-disorder resistivity in EuRhSi3 (simeq 35 muOhm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 2, 'K', 2],[147.0, 13, 'T', 2],[74.0, 50, 'K', 1],[202.0, 2, 'K', 3],[212.0, 14, 'T', 3]

N
###Enhanced conduction band density of states in intermetallic EuTSi$_3$ (T=Rh, Ir)|A. Maurya,P. Bonville,A. Thamizhavel,S. K. Dhar###
(1445189, 1445189)
 Wefind anomalously large values, with respect to other members of the series, forthe R<missing VAR>KKY Neel temperature, for the spin-flop field (13 T), for the spin-wavegap (simeq 20-25 K) inferred from both resistivity and specific heat data,for the spin-disorder resistivity in EuRhSi3 (simeq 35 muOhm.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 2, 'K', 2],[151.0, 13, 'T', 2],[78.0, 50, 'K', 1],[200.0, 2, 'K', 3],[210.0, 14, 'T', 3]

K
###Enhanced conduction band density of states in intermetallic EuTSi$_3$ (T=Rh, Ir)|A. Maurya,P. Bonville,A. Thamizhavel,S. K. Dhar###
(1445230, 1445230)
 Wefind anomalously large values, with respect to other members of the series, forthe R<missing VAR>KKY Neel temperature, for the spin-flop field (13 T), for the spin-wavegap (simeq 20-25 K) inferred from both resistivity and specific heat data,for the spin-disorder resistivity in EuRhSi3 (simeq 35 muOhm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[206.0, 2, 'K', 2],[192.0, 13, 'T', 2],[119.0, 50, 'K', 1],[159.0, 2, 'K', 3],[169.0, 14, 'T', 3]

EuRhSi3
###Enhanced conduction band density of states in intermetallic EuTSi$_3$ (T=Rh, Ir)|A. Maurya,P. Bonville,A. Thamizhavel,S. K. Dhar###
(1445263, 1445266)
 Wefind anomalously large values, with respect to other members of the series, forthe R<missing VAR>KKY Neel temperature, for the spin-flop field (13 T), for the spin-wavegap (simeq 20-25 K) inferred from both resistivity and specific heat data,for the spin-disorder resistivity in EuRhSi3 (simeq 35 muOhm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[239.0, 2, 'K', 2],[225.0, 13, 'T', 2],[152.0, 50, 'K', 1],[123.0, 2, 'K', 3],[133.0, 14, 'T', 3]

EuIrSi3
###Enhanced conduction band density of states in intermetallic EuTSi$_3$ (T=Rh, Ir)|A. Maurya,P. Bonville,A. Thamizhavel,S. K. Dhar###
(1445361, 1445364)
 EuIrSi3exhibits a giant magnetoresistance ratio, with values exceeding 600 % at 2 K ina field of 14 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[337.0, 2, 'K', 5],[323.0, 13, 'T', 5],[250.0, 50, 'K', 4],[25.0, 2, 'K', 0],[35.0, 14, 'T', 0]

ErPd2Si2
###Distinct itinerant spin-density waves and local-moment antiferromagnetism in an intermetallic ErPd$_2$Si$_2$ single crystal|Hai-Feng Li,Chongde Cao,Andrew Wildes,Wolfgang Schmidt,Karin Schmalzl,Binyang Hou,Louis-Pierre Regnault,Cong Zhang,Paul Meuffels,Wolfgang Löser,Georg Roth###
(1445434, 1445438)
Distinct itinerant spin-density waves and local-moment antiferromagnetism in an intermetallic ErPd2Si2 single crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[185.0, 0, ',', 3],[217.0, 0, ',', 3]

H
###Distinct itinerant spin-density waves and local-moment antiferromagnetism in an intermetallic ErPd$_2$Si$_2$ single crystal|Hai-Feng Li,Chongde Cao,Andrew Wildes,Wolfgang Schmidt,Karin Schmalzl,Binyang Hou,Louis-Pierre Regnault,Cong Zhang,Paul Meuffels,Wolfgang Löser,Georg Roth###
(1445613, 1445613)
 Here wedistinguish two antiferromagnetic modulations with respective propagation wavevectors of Q<missing VAR>pm  (H pm 0.557(1), 0, L<missing VAR> pm 0.150(1)) and Q<missing VAR>textC (H pm 0.564(1), 0, L), where left(H, L<missing VAR>right) are allowed Millerindices, in an ErPd2Si2 single crystal by neutron scattering andestablish their respective temperature- and field-dependent phase diagrams.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 0, ',', 0],[42.0, 0, ',', 0]

C
###Distinct itinerant spin-density waves and local-moment antiferromagnetism in an intermetallic ErPd$_2$Si$_2$ single crystal|Hai-Feng Li,Chongde Cao,Andrew Wildes,Wolfgang Schmidt,Karin Schmalzl,Binyang Hou,Louis-Pierre Regnault,Cong Zhang,Paul Meuffels,Wolfgang Löser,Georg Roth###
(1445640, 1445640)
 Here wedistinguish two antiferromagnetic modulations with respective propagation wavevectors of Q<missing VAR>pm  (H pm 0.557(1), 0, L<missing VAR> pm 0.150(1)) and Q<missing VAR>textC (H pm 0.564(1), 0, L), where left(H, L<missing VAR>right) are allowed Millerindices, in an ErPd2Si2 single crystal by neutron scattering andestablish their respective temperature- and field-dependent phase diagrams.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 0, ',', 0],[15.0, 0, ',', 0]

H
###Distinct itinerant spin-density waves and local-moment antiferromagnetism in an intermetallic ErPd$_2$Si$_2$ single crystal|Hai-Feng Li,Chongde Cao,Andrew Wildes,Wolfgang Schmidt,Karin Schmalzl,Binyang Hou,Louis-Pierre Regnault,Cong Zhang,Paul Meuffels,Wolfgang Löser,Georg Roth###
(1445645, 1445645)
 Here wedistinguish two antiferromagnetic modulations with respective propagation wavevectors of Q<missing VAR>pm  (H pm 0.557(1), 0, L<missing VAR> pm 0.150(1)) and Q<missing VAR>textC (H pm 0.564(1), 0, L), where left(H, L<missing VAR>right) are allowed Millerindices, in an ErPd2Si2 single crystal by neutron scattering andestablish their respective temperature- and field-dependent phase diagrams.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 0, ',', 0],[10.0, 0, ',', 0]

H
###Distinct itinerant spin-density waves and local-moment antiferromagnetism in an intermetallic ErPd$_2$Si$_2$ single crystal|Hai-Feng Li,Chongde Cao,Andrew Wildes,Wolfgang Schmidt,Karin Schmalzl,Binyang Hou,Louis-Pierre Regnault,Cong Zhang,Paul Meuffels,Wolfgang Löser,Georg Roth###
(1445666, 1445666)
 Here wedistinguish two antiferromagnetic modulations with respective propagation wavevectors of Q<missing VAR>pm  (H pm 0.557(1), 0, L<missing VAR> pm 0.150(1)) and Q<missing VAR>textC (H pm 0.564(1), 0, L), where left(H, L<missing VAR>right) are allowed Millerindices, in an ErPd2Si2 single crystal by neutron scattering andestablish their respective temperature- and field-dependent phase diagrams.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 0, ',', 0],[11.0, 0, ',', 0]

ErPd2Si2
###Distinct itinerant spin-density waves and local-moment antiferromagnetism in an intermetallic ErPd$_2$Si$_2$ single crystal|Hai-Feng Li,Chongde Cao,Andrew Wildes,Wolfgang Schmidt,Karin Schmalzl,Binyang Hou,Louis-Pierre Regnault,Cong Zhang,Paul Meuffels,Wolfgang Löser,Georg Roth###
(1445687, 1445691)
 Here wedistinguish two antiferromagnetic modulations with respective propagation wavevectors of Q<missing VAR>pm  (H pm 0.557(1), 0, L<missing VAR> pm 0.150(1)) and Q<missing VAR>textC (H pm 0.564(1), 0, L), where left(H, L<missing VAR>right) are allowed Millerindices, in an ErPd2Si2 single crystal by neutron scattering andestablish their respective temperature- and field-dependent phase diagrams.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 0, ',', 0],[32.0, 0, ',', 0]

C
###Distinct itinerant spin-density waves and local-moment antiferromagnetism in an intermetallic ErPd$_2$Si$_2$ single crystal|Hai-Feng Li,Chongde Cao,Andrew Wildes,Wolfgang Schmidt,Karin Schmalzl,Binyang Hou,Louis-Pierre Regnault,Cong Zhang,Paul Meuffels,Wolfgang Löser,Georg Roth###
(1445821, 1445821)
 The Q<missing VAR>pm modulation may beattributed to localized 4emphf<missing VAR> moments while the Q<missing VAR>textC correlateswell with itinerant conduction bands, supported by our transport studies.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[198.0, 0, ',', 3],[166.0, 0, ',', 3]

ErPd2Si2
###Distinct itinerant spin-density waves and local-moment antiferromagnetism in an intermetallic ErPd$_2$Si$_2$ single crystal|Hai-Feng Li,Chongde Cao,Andrew Wildes,Wolfgang Schmidt,Karin Schmalzl,Binyang Hou,Louis-Pierre Regnault,Cong Zhang,Paul Meuffels,Wolfgang Löser,Georg Roth###
(1445852, 1445856)
Hence, ErPd2Si2 represents a new model compound that displaysclearly-separated itinerant and localized moments, substantiating earlytheoretical predictions and providing a unique platform allowing the study ofitinerant electron behavior in a localized antiferromagnetic matrix.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[229.0, 0, ',', 4],[197.0, 0, ',', 4]

Bi2Se3
###Topological Insulator Thin Films Starting from the Amorphous Phase - Bi$_2$Se$_3$ as Example|J. Barzola-Quiquia,T. Lehmann,M. Stiller,D. Spemann,P. Esquinazi,P. Häussler###
(1445959, 1445962)
Topological Insulator Thin Films Starting from the Amorphous Phase - Bi2Se3 as Example.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[279.0, 2, 'K', 6],[282.0, 275, 'K', 6]

Bi2Se3
###Topological Insulator Thin Films Starting from the Amorphous Phase - Bi$_2$Se$_3$ as Example|J. Barzola-Quiquia,T. Lehmann,M. Stiller,D. Spemann,P. Esquinazi,P. Häussler###
(1445987, 1445990)
 We present a new method to obtain topological insulator Bi2Se3 thinfilms with a centimeter large lateral length.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[251.0, 2, 'K', 5],[254.0, 275, 'K', 5]

Bi2Se3
###Topological Insulator Thin Films Starting from the Amorphous Phase - Bi$_2$Se$_3$ as Example|J. Barzola-Quiquia,T. Lehmann,M. Stiller,D. Spemann,P. Esquinazi,P. Häussler###
(1446016, 1446019)
 To produce amorphous Bi2Se3thin films we have used a sequential flash-evaporation method at roomtemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[222.0, 2, 'K', 4],[225.0, 275, 'K', 4]

Bi2Se3
###Topological Insulator Thin Films Starting from the Amorphous Phase - Bi$_2$Se$_3$ as Example|J. Barzola-Quiquia,T. Lehmann,M. Stiller,D. Spemann,P. Esquinazi,P. Häussler###
(1446105, 1446108)
 During annealing the samplestransform into the rhombohedral Bi2Se3 crystalline strcuture which wasconfirmed using X<missing VAR>-ray diffraction and Raman spectroscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 2, 'K', 2],[136.0, 275, 'K', 2]

H
###Topological Insulator Thin Films Starting from the Amorphous Phase - Bi$_2$Se$_3$ as Example|J. Barzola-Quiquia,T. Lehmann,M. Stiller,D. Spemann,P. Esquinazi,P. Häussler###
(1446229, 1446229)
 We have measured themagnetoresistance (MR) and the Hall effect (HE) at different temperaturesbetween 2 K and 275 K.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 2, 'K', 0],[15.0, 275, 'K', 0]

At
###Topological Insulator Thin Films Starting from the Amorphous Phase - Bi$_2$Se$_3$ as Example|J. Barzola-Quiquia,T. Lehmann,M. Stiller,D. Spemann,P. Esquinazi,P. Häussler###
(1446247, 1446247)
 At temperatures T<missing VAR> lesssim 50 K and fields B lesssim1 T<missing VAR> we observe weak anti-localization in the MR; the Hall measurements confirmthe n<missing VAR>-type character of the samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 2, 'K', 1],[3.0, 275, 'K', 1]

K
###Topological Insulator Thin Films Starting from the Amorphous Phase - Bi$_2$Se$_3$ as Example|J. Barzola-Quiquia,T. Lehmann,M. Stiller,D. Spemann,P. Esquinazi,P. Häussler###
(1446257, 1446257)
 At temperatures T<missing VAR> lesssim 50 K and fields B lesssim1 T<missing VAR> we observe weak anti-localization in the MR; the Hall measurements confirmthe n<missing VAR>-type character of the samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 2, 'K', 1],[13.0, 275, 'K', 1]

B
###Topological Insulator Thin Films Starting from the Amorphous Phase - Bi$_2$Se$_3$ as Example|J. Barzola-Quiquia,T. Lehmann,M. Stiller,D. Spemann,P. Esquinazi,P. Häussler###
(1446263, 1446263)
 At temperatures T<missing VAR> lesssim 50 K and fields B lesssim1 T<missing VAR> we observe weak anti-localization in the MR; the Hall measurements confirmthe n<missing VAR>-type character of the samples.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 2, 'K', 1],[19.0, 275, 'K', 1]

MgO
###Magnetic coherent tunnel junctions with periodic grating barrier|Henan Fang,Mingwen Xiao,Wenbin Rui,Jun Du,Zhikuo Tao###
(1446504, 1446505)
The theory can answer the two basic problems present in MgO-based MTJs (1) Whydoes the tunneling magnetoresistance (TMR) oscillate with the barrierthickness?
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoS2
###Magnetic coherent tunnel junctions with periodic grating barrier|Henan Fang,Mingwen Xiao,Wenbin Rui,Jun Du,Zhikuo Tao###
(1446804, 1446806)
, MoS2 and graphite,and most feasible for industries.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ag2Se
###Ultraquantum magnetoresistance in single-crystalline $β$-Ag$_2$Se|Chenglong Zhang,Haiwen Li,Tay-Rong Chang,Su-Yang Xu,Wei Hua,Hua Jiang,Zhujun Yuan,Junliang Sun,Horng-Tay Jeng,M. Zahid Hasan,X. C. Xie,Shuang Jia###
(1446844, 1446846)
Ultraquantum magnetoresistance in single-crystalline -Ag2Se.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[204.0, 3, 'Tesla', 4]

In
###Ultraquantum magnetoresistance in single-crystalline $β$-Ag$_2$Se|Chenglong Zhang,Haiwen Li,Tay-Rong Chang,Su-Yang Xu,Wei Hua,Hua Jiang,Zhujun Yuan,Junliang Sun,Horng-Tay Jeng,M. Zahid Hasan,X. C. Xie,Shuang Jia###
(1446849, 1446849)
 In the history of condensed matter physics, reinvestigation of a well-studiedmaterial with enhanced quality sometimes led to important scientificdiscoveries.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[201.0, 3, 'Tesla', 3]

GaAs/AlGaAs
###Ultraquantum magnetoresistance in single-crystalline $β$-Ag$_2$Se|Chenglong Zhang,Haiwen Li,Tay-Rong Chang,Su-Yang Xu,Wei Hua,Hua Jiang,Zhujun Yuan,Junliang Sun,Horng-Tay Jeng,M. Zahid Hasan,X. C. Xie,Shuang Jia###
(1446928, 1446933)
 A well-known example is the discovery of fractional quantum Halleffect in high quality GaAs/AlGaAs heterojunctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[117.0, 3, 'Tesla', 2]

Ag2Se
###Ultraquantum magnetoresistance in single-crystalline $β$-Ag$_2$Se|Chenglong Zhang,Haiwen Li,Tay-Rong Chang,Su-Yang Xu,Wei Hua,Hua Jiang,Zhujun Yuan,Junliang Sun,Horng-Tay Jeng,M. Zahid Hasan,X. C. Xie,Shuang Jia###
(1446978, 1446980)
 Here we report the firstsingle crystal growth and magnetoresistance (MR) measurements of the silverchalcogenide beta -Ag2Se (Naumannite), a compound has been known for theunusual, linear-field-dependent MR in its polycrystalline form for over adecade.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 3, 'Tesla', 1]

Ag2Se
###Ultraquantum magnetoresistance in single-crystalline $β$-Ag$_2$Se|Chenglong Zhang,Haiwen Li,Tay-Rong Chang,Su-Yang Xu,Wei Hua,Hua Jiang,Zhujun Yuan,Junliang Sun,Horng-Tay Jeng,M. Zahid Hasan,X. C. Xie,Shuang Jia###
(1447091, 1447093)
 With the quantum limit (QL) as low as 3 Tesla, a moderate fieldproduced by a superconductor magnet available in many laboratories can easilydrive the electrons in Ag2Se to an unprecedented state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 3, 'Tesla', 0]

Ag2Se
###Ultraquantum magnetoresistance in single-crystalline $β$-Ag$_2$Se|Chenglong Zhang,Haiwen Li,Tay-Rong Chang,Su-Yang Xu,Wei Hua,Hua Jiang,Zhujun Yuan,Junliang Sun,Horng-Tay Jeng,M. Zahid Hasan,X. C. Xie,Shuang Jia###
(1447169, 1447171)
Characterization of the single-crystalline Ag2Se and the fabrication ofelectric devices working above the QL, will represent a new direction for thestudy of these exotic electrons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 3, 'Tesla', 2]

Ni
###Magnetic properties of 2D nickel nanostrips: structure dependent magnetic anomaly|Vikas Kashid,Vaishali Shah,H. G. Salunke,Yuriy Mokrousov,Stefan Blügel###
(1447276, 1447276)
 We have investigated different geometries of two dimensional (2D) infinitelength Ni nanowires of increasing width using spin density functional theorycalculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 2, 'D', 1],[147.0, 2, 'D', 4]

Ni
###Magnetic properties of 2D nickel nanostrips: structure dependent magnetic anomaly|Vikas Kashid,Vaishali Shah,H. G. Salunke,Yuriy Mokrousov,Stefan Blügel###
(1447433, 1447433)
 All 2D nanowires as well as Ni (111)and Ni (100) monolayer investigated are ferromagnetic under the Stonercriterion and exhibit enhanced magnetic moments as compared to bulk Ni and therespective Ni monolayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[198.0, 2, 'D', 5],[10.0, 2, 'D', 0]

Ni
###Magnetic properties of 2D nickel nanostrips: structure dependent magnetic anomaly|Vikas Kashid,Vaishali Shah,H. G. Salunke,Yuriy Mokrousov,Stefan Blügel###
(1447442, 1447442)
 All 2D nanowires as well as Ni (111)and Ni (100) monolayer investigated are ferromagnetic under the Stonercriterion and exhibit enhanced magnetic moments as compared to bulk Ni and therespective Ni monolayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[207.0, 2, 'D', 5],[19.0, 2, 'D', 0]

Ni
###Magnetic properties of 2D nickel nanostrips: structure dependent magnetic anomaly|Vikas Kashid,Vaishali Shah,H. G. Salunke,Yuriy Mokrousov,Stefan Blügel###
(1447483, 1447483)
 All 2D nanowires as well as Ni (111)and Ni (100) monolayer investigated are ferromagnetic under the Stonercriterion and exhibit enhanced magnetic moments as compared to bulk Ni and therespective Ni monolayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[248.0, 2, 'D', 5],[60.0, 2, 'D', 0]

Ni
###Magnetic properties of 2D nickel nanostrips: structure dependent magnetic anomaly|Vikas Kashid,Vaishali Shah,H. G. Salunke,Yuriy Mokrousov,Stefan Blügel###
(1447492, 1447492)
 All 2D nanowires as well as Ni (111)and Ni (100) monolayer investigated are ferromagnetic under the Stonercriterion and exhibit enhanced magnetic moments as compared to bulk Ni and therespective Ni monolayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[257.0, 2, 'D', 5],[69.0, 2, 'D', 0]

Ni
###Magnetic properties of 2D nickel nanostrips: structure dependent magnetic anomaly|Vikas Kashid,Vaishali Shah,H. G. Salunke,Yuriy Mokrousov,Stefan Blügel###
(1447601, 1447601)
 The doublerectangular nanowire exhibits a magnetic anomaly with a smaller magnetic momentwhen compared to Ni (100) monolayer and is the only structure with an easy axisperpendicular to the wire axis.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[366.0, 2, 'D', 8],[178.0, 2, 'D', 3]

In
###Experimental observation of Weyl points|Ling Lu,Zhiyu Wang,Dexin Ye,Lixin Ran,Liang Fu,John D. Joannopoulos,Marin Soljačić###
(1447658, 1447658)
 In 1929, Hermann Weyl derived the massless solutions from the Dirac equation- the relativistic wave equation for electrons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 1929, ',', 0],[325.0, 16, ',', 6],[387.0, 3, 'D', 8]

In
###Experimental observation of Weyl points|Ling Lu,Zhiyu Wang,Dexin Ye,Lixin Ran,Liang Fu,John D. Joannopoulos,Marin Soljačić###
(1447810, 1447810)
 In all cases,two linear dispersion bands in the three-dimensional (3D) momentum spaceintersect at a single degenerate point - the Weyl point.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 1929, ',', 4],[173.0, 16, ',', 2],[235.0, 3, 'D', 4]

In
###Experimental observation of Weyl points|Ling Lu,Zhiyu Wang,Dexin Ye,Lixin Ran,Liang Fu,John D. Joannopoulos,Marin Soljačić###
(1448016, 1448016)
In this work, we report on precisely such an observation in aninversion-breaking 3D double-gyroid photonic crystal without breakingtime-reversal symmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[356.0, 1929, ',', 8],[33.0, 16, ',', 2],[29.0, 3, 'D', 0]

WTe2
###A combined experimental and theoretical study of the electronic and vibrational properties of bulk and few-layer Td-WTe2|Manoj K. Jana,Anjali Singh,Dattatray J. Late,Catherine Rajamathi,Kanishka Biswas,Claudia Felser,Umesh V. Waghmare,C. N. R. Rao###
(1448111, 1448113)
A combined experimental and theoretical study of the electronic and vibrational properties of bulk and few-layer Td-WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 1, 'T', 4],[189.0, 373, 'K', 5],[225.0, 33, 'possible', 7],[253.0, 112, ',', 7],[256.0, 118, ',', 7],[259.0, 134, ',', 7],[261.0, 165, 'and', 7],[262.0, 212, 'cm', 7],[309.0, 165, 'cm', 8],[314.0, 212, 'cm', 8]

WTe2
###A combined experimental and theoretical study of the electronic and vibrational properties of bulk and few-layer Td-WTe2|Manoj K. Jana,Anjali Singh,Dattatray J. Late,Catherine Rajamathi,Kanishka Biswas,Claudia Felser,Umesh V. Waghmare,C. N. R. Rao###
(1448139, 1448141)
 The recent discovery of non-saturating giant positive magnetoresistance inTd-WTe2 has aroused great interest in this material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 1, 'T', 3],[161.0, 373, 'K', 4],[197.0, 33, 'possible', 6],[225.0, 112, ',', 6],[228.0, 118, ',', 6],[231.0, 134, ',', 6],[233.0, 165, 'and', 6],[234.0, 212, 'cm', 6],[281.0, 165, 'cm', 7],[286.0, 212, 'cm', 7]

WTe2
###A combined experimental and theoretical study of the electronic and vibrational properties of bulk and few-layer Td-WTe2|Manoj K. Jana,Anjali Singh,Dattatray J. Late,Catherine Rajamathi,Kanishka Biswas,Claudia Felser,Umesh V. Waghmare,C. N. R. Rao###
(1448190, 1448192)
 We have studied thestructural, electronic and vibrational properties of bulk and few-layer Td-WTe2experimentally and theoretically.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 1, 'T', 2],[110.0, 373, 'K', 3],[146.0, 33, 'possible', 5],[174.0, 112, ',', 5],[177.0, 118, ',', 5],[180.0, 134, ',', 5],[182.0, 165, 'and', 5],[183.0, 212, 'cm', 5],[230.0, 165, 'cm', 6],[235.0, 212, 'cm', 6]

WTe2
###A combined experimental and theoretical study of the electronic and vibrational properties of bulk and few-layer Td-WTe2|Manoj K. Jana,Anjali Singh,Dattatray J. Late,Catherine Rajamathi,Kanishka Biswas,Claudia Felser,Umesh V. Waghmare,C. N. R. Rao###
(1448229, 1448231)
 Spin-orbit coupling is found to govern thesemi-metallic character of Td-WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 1, 'T', 1],[71.0, 373, 'K', 2],[107.0, 33, 'possible', 4],[135.0, 112, ',', 4],[138.0, 118, ',', 4],[141.0, 134, ',', 4],[143.0, 165, 'and', 4],[144.0, 212, 'cm', 4],[191.0, 165, 'cm', 5],[196.0, 212, 'cm', 5]

WTe2
###A combined experimental and theoretical study of the electronic and vibrational properties of bulk and few-layer Td-WTe2|Manoj K. Jana,Anjali Singh,Dattatray J. Late,Catherine Rajamathi,Kanishka Biswas,Claudia Felser,Umesh V. Waghmare,C. N. R. Rao###
(1448313, 1448315)
 Lattice vibrations in Td-WTe2 have been analyzed by firstprinciple calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 1, 'T', 2],[11.0, 373, 'K', 1],[23.0, 33, 'possible', 1],[51.0, 112, ',', 1],[54.0, 118, ',', 1],[57.0, 134, ',', 1],[59.0, 165, 'and', 1],[60.0, 212, 'cm', 1],[107.0, 165, 'cm', 2],[112.0, 212, 'cm', 2]

WTe2
###A combined experimental and theoretical study of the electronic and vibrational properties of bulk and few-layer Td-WTe2|Manoj K. Jana,Anjali Singh,Dattatray J. Late,Catherine Rajamathi,Kanishka Biswas,Claudia Felser,Umesh V. Waghmare,C. N. R. Rao###
(1448386, 1448388)
 Out of the 33 possible zone-center Raman active modes,five distinct Raman bands are observed around 112, 118, 134, 165 and 212 cm-1in bulk Td-WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 1, 'T', 3],[84.0, 373, 'K', 2],[48.0, 33, 'possible', 0],[20.0, 112, ',', 0],[17.0, 118, ',', 0],[14.0, 134, ',', 0],[12.0, 165, 'and', 0],[11.0, 212, 'cm', 0],[34.0, 165, 'cm', 1],[39.0, 212, 'cm', 1]

WTe2
###A combined experimental and theoretical study of the electronic and vibrational properties of bulk and few-layer Td-WTe2|Manoj K. Jana,Anjali Singh,Dattatray J. Late,Catherine Rajamathi,Kanishka Biswas,Claudia Felser,Umesh V. Waghmare,C. N. R. Rao###
(1448495, 1448497)
 Most of the bands of Td-WTe2 stiffen, and theratio of the integrated intensities of the A1 to A1 bands decreases inthe few-layer sample, while all the bands soften in both bulk and few-layersamples with increasing temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[250.0, 1, 'T', 6],[193.0, 373, 'K', 5],[157.0, 33, 'possible', 3],[129.0, 112, ',', 3],[126.0, 118, ',', 3],[123.0, 134, ',', 3],[121.0, 165, 'and', 3],[120.0, 212, 'cm', 3],[73.0, 165, 'cm', 2],[68.0, 212, 'cm', 2]

S
###Redefinition of spin Hall magnetoresistance|Yan-Qing Zhang,Hua-Rui Fu,Niu-Yi Sun,Wen-Ru Che,Ding Ding,Juan Qin,Cai-Yin You,Zhen-Gang Zhu,Rong Shan###
(1448627, 1448627)
 Using a multi-conduction-channel model, we redefined the micromechanism ofspin Hall magnetoresistance (SMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Redefinition of spin Hall magnetoresistance|Yan-Qing Zhang,Hua-Rui Fu,Niu-Yi Sun,Wen-Ru Che,Ding Ding,Juan Qin,Cai-Yin You,Zhen-Gang Zhu,Rong Shan###
(1448728, 1448728)
 Four conduction channels are created by spinaccumulation of nonpolarized electron flow at top, bottom, left and rightinterfaces of the film sample, which corresponds to different resistance statesof polarized electron flow with various spin directions relative to the appliedmagnetic field (mathbfH), and brings about the SMR effect finally.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Redefinition of spin Hall magnetoresistance|Yan-Qing Zhang,Hua-Rui Fu,Niu-Yi Sun,Wen-Ru Che,Ding Ding,Juan Qin,Cai-Yin You,Zhen-Gang Zhu,Rong Shan###
(1448740, 1448740)
 Four conduction channels are created by spinaccumulation of nonpolarized electron flow at top, bottom, left and rightinterfaces of the film sample, which corresponds to different resistance statesof polarized electron flow with various spin directions relative to the appliedmagnetic field (mathbfH), and brings about the SMR effect finally.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YI
###Redefinition of spin Hall magnetoresistance|Yan-Qing Zhang,Hua-Rui Fu,Niu-Yi Sun,Wen-Ru Che,Ding Ding,Juan Qin,Cai-Yin You,Zhen-Gang Zhu,Rong Shan###
(1448770, 1448771)
 Themagnetic insulator layer, such as yttrium iron garnet (YIG), is not a requisitefor the observation of SMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Redefinition of spin Hall magnetoresistance|Yan-Qing Zhang,Hua-Rui Fu,Niu-Yi Sun,Wen-Ru Che,Ding Ding,Juan Qin,Cai-Yin You,Zhen-Gang Zhu,Rong Shan###
(1448793, 1448793)
 Themagnetic insulator layer, such as yttrium iron garnet (YIG), is not a requisitefor the observation of SMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Redefinition of spin Hall magnetoresistance|Yan-Qing Zhang,Hua-Rui Fu,Niu-Yi Sun,Wen-Ru Che,Ding Ding,Juan Qin,Cai-Yin You,Zhen-Gang Zhu,Rong Shan###
(1448803, 1448803)
 Instead, the SMR effect is perfectly realized, withan order of magnitude increase, in the sample with a discontinuous layer ofisolated-Co2FeAl (0.3 nm) grains covered by 2.5-nm-thick Pt layer on MgOsubstrate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co2FeAl
###Redefinition of spin Hall magnetoresistance|Yan-Qing Zhang,Hua-Rui Fu,Niu-Yi Sun,Wen-Ru Che,Ding Ding,Juan Qin,Cai-Yin You,Zhen-Gang Zhu,Rong Shan###
(1448849, 1448852)
 Instead, the SMR effect is perfectly realized, withan order of magnitude increase, in the sample with a discontinuous layer ofisolated-Co2FeAl (0.3 nm) grains covered by 2.5-nm-thick Pt layer on MgOsubstrate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Redefinition of spin Hall magnetoresistance|Yan-Qing Zhang,Hua-Rui Fu,Niu-Yi Sun,Wen-Ru Che,Ding Ding,Juan Qin,Cai-Yin You,Zhen-Gang Zhu,Rong Shan###
(1448872, 1448872)
 Instead, the SMR effect is perfectly realized, withan order of magnitude increase, in the sample with a discontinuous layer ofisolated-Co2FeAl (0.3 nm) grains covered by 2.5-nm-thick Pt layer on MgOsubstrate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Redefinition of spin Hall magnetoresistance|Yan-Qing Zhang,Hua-Rui Fu,Niu-Yi Sun,Wen-Ru Che,Ding Ding,Juan Qin,Cai-Yin You,Zhen-Gang Zhu,Rong Shan###
(1448878, 1448879)
 Instead, the SMR effect is perfectly realized, withan order of magnitude increase, in the sample with a discontinuous layer ofisolated-Co2FeAl (0.3 nm) grains covered by 2.5-nm-thick Pt layer on MgOsubstrate.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Redefinition of spin Hall magnetoresistance|Yan-Qing Zhang,Hua-Rui Fu,Niu-Yi Sun,Wen-Ru Che,Ding Ding,Juan Qin,Cai-Yin You,Zhen-Gang Zhu,Rong Shan###
(1448901, 1448901)
 The model intuitively gives the typical relationship of SMR effect,i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Redefinition of spin Hall magnetoresistance|Yan-Qing Zhang,Hua-Rui Fu,Niu-Yi Sun,Wen-Ru Che,Ding Ding,Juan Qin,Cai-Yin You,Zhen-Gang Zhu,Rong Shan###
(1448956, 1448956)
 rhoparallelapproxrhobot>rhoT<missing VAR>, where rhobot,rhoparallel and rhoT<missing VAR> are longitudinal reisitivities with appliedmagnetic field (mathbfH) direction perpendicular to the current directionout of plane (as Z<missing VAR> direction), parallel with and perpendicular to it in plane(as X<missing VAR> and Y direction), respectively.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Y
###Redefinition of spin Hall magnetoresistance|Yan-Qing Zhang,Hua-Rui Fu,Niu-Yi Sun,Wen-Ru Che,Ding Ding,Juan Qin,Cai-Yin You,Zhen-Gang Zhu,Rong Shan###
(1449011, 1449011)
 rhoparallelapproxrhobot>rhoT<missing VAR>, where rhobot,rhoparallel and rhoT<missing VAR> are longitudinal reisitivities with appliedmagnetic field (mathbfH) direction perpendicular to the current directionout of plane (as Z<missing VAR> direction), parallel with and perpendicular to it in plane(as X<missing VAR> and Y direction), respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Redefinition of spin Hall magnetoresistance|Yan-Qing Zhang,Hua-Rui Fu,Niu-Yi Sun,Wen-Ru Che,Ding Ding,Juan Qin,Cai-Yin You,Zhen-Gang Zhu,Rong Shan###
(1449053, 1449053)
 Our research reveals that the scatteringbetween polarized and nonpolarized conduction electrons is the origin of SMR,and the intrinsic SMR is not constant when mathbfH direction rotates in XZplane, which is distinct from that in the reported SMR mechanism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Redefinition of spin Hall magnetoresistance|Yan-Qing Zhang,Hua-Rui Fu,Niu-Yi Sun,Wen-Ru Che,Ding Ding,Juan Qin,Cai-Yin You,Zhen-Gang Zhu,Rong Shan###
(1449065, 1449065)
 Our research reveals that the scatteringbetween polarized and nonpolarized conduction electrons is the origin of SMR,and the intrinsic SMR is not constant when mathbfH direction rotates in XZplane, which is distinct from that in the reported SMR mechanism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Redefinition of spin Hall magnetoresistance|Yan-Qing Zhang,Hua-Rui Fu,Niu-Yi Sun,Wen-Ru Che,Ding Ding,Juan Qin,Cai-Yin You,Zhen-Gang Zhu,Rong Shan###
(1449078, 1449078)
 Our research reveals that the scatteringbetween polarized and nonpolarized conduction electrons is the origin of SMR,and the intrinsic SMR is not constant when mathbfH direction rotates in XZplane, which is distinct from that in the reported SMR mechanism.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Redefinition of spin Hall magnetoresistance|Yan-Qing Zhang,Hua-Rui Fu,Niu-Yi Sun,Wen-Ru Che,Ding Ding,Juan Qin,Cai-Yin You,Zhen-Gang Zhu,Rong Shan###
(1449109, 1449109)
 Our research reveals that the scatteringbetween polarized and nonpolarized conduction electrons is the origin of SMR,and the intrinsic SMR is not constant when mathbfH direction rotates in XZplane, which is distinct from that in the reported SMR mechanism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr2IrO4
###Electrically Tunable Band Gap in Antiferromagnetic Mott Insulator Sr2IrO4|Cheng Wang,Heidi Seinige,Gang Cao,Jian-Shi Zhou,John B. Goodenough,Maxim Tsoi###
(1449140, 1449144)
Electrically Tunable Band Gap in Antiferromagnetic Mott Insulator Sr2IrO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 2, 'D', 4],[211.0, 3, 'D', 5],[326.0, 16, '%', 6],[392.0, 5, 'd', 7],[419.0, 5, 'd', 8]

Sr2IrO4
###Electrically Tunable Band Gap in Antiferromagnetic Mott Insulator Sr2IrO4|Cheng Wang,Heidi Seinige,Gang Cao,Jian-Shi Zhou,John B. Goodenough,Maxim Tsoi###
(1449363, 1449367)
 Here we demonstrate the realization of anelectrically tunable band gap in a 3D antiferromagnetic Mott insulator Sr2IrO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 2, 'D', 1],[8.0, 3, 'D', 0],[103.0, 16, '%', 1],[169.0, 5, 'd', 2],[196.0, 5, 'd', 3]

Cu
###Electrically Tunable Band Gap in Antiferromagnetic Mott Insulator Sr2IrO4|Cheng Wang,Heidi Seinige,Gang Cao,Jian-Shi Zhou,John B. Goodenough,Maxim Tsoi###
(1449385, 1449385)
Using nano-scale contacts between a sharpened Cu tip and a single crystal ofSr2IrO4, we apply a variable external electric field up to a few M<missing VAR>V/m<missing VAR> anddemonstrate a continuous reduction in the band gap of Sr2IrO4 by as much as16%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 2, 'D', 2],[30.0, 3, 'D', 1],[85.0, 16, '%', 0],[151.0, 5, 'd', 1],[178.0, 5, 'd', 2]

Sr2IrO4
###Electrically Tunable Band Gap in Antiferromagnetic Mott Insulator Sr2IrO4|Cheng Wang,Heidi Seinige,Gang Cao,Jian-Shi Zhou,John B. Goodenough,Maxim Tsoi###
(1449400, 1449404)
Using nano-scale contacts between a sharpened Cu tip and a single crystal ofSr2IrO4, we apply a variable external electric field up to a few M<missing VAR>V/m<missing VAR> anddemonstrate a continuous reduction in the band gap of Sr2IrO4 by as much as16%.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 2, 'D', 2],[45.0, 3, 'D', 1],[66.0, 16, '%', 0],[132.0, 5, 'd', 1],[159.0, 5, 'd', 2]

V
###Electrically Tunable Band Gap in Antiferromagnetic Mott Insulator Sr2IrO4|Cheng Wang,Heidi Seinige,Gang Cao,Jian-Shi Zhou,John B. Goodenough,Maxim Tsoi###
(1449430, 1449430)
Using nano-scale contacts between a sharpened Cu tip and a single crystal ofSr2IrO4, we apply a variable external electric field up to a few M<missing VAR>V/m<missing VAR> anddemonstrate a continuous reduction in the band gap of Sr2IrO4 by as much as16%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 2, 'D', 2],[75.0, 3, 'D', 1],[40.0, 16, '%', 0],[106.0, 5, 'd', 1],[133.0, 5, 'd', 2]

Sr2IrO4
###Electrically Tunable Band Gap in Antiferromagnetic Mott Insulator Sr2IrO4|Cheng Wang,Heidi Seinige,Gang Cao,Jian-Shi Zhou,John B. Goodenough,Maxim Tsoi###
(1449455, 1449459)
Using nano-scale contacts between a sharpened Cu tip and a single crystal ofSr2IrO4, we apply a variable external electric field up to a few M<missing VAR>V/m<missing VAR> anddemonstrate a continuous reduction in the band gap of Sr2IrO4 by as much as16%.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 2, 'D', 2],[100.0, 3, 'D', 1],[11.0, 16, '%', 0],[77.0, 5, 'd', 1],[104.0, 5, 'd', 2]

MnSi
###Electrical Probing of Field-Driven Cascading Quantized Transitions of Skyrmion Cluster States in MnSi Nanowires|Haifeng Du,Dong Liang,Chiming Jin,Lingyao Kong,Matthew J. Stolt,Wei Ning,Jiyong Yang,Ying Xing,Jian Wang,Renchao Che,Jiadong Zang,Song Jin,Yuheng Zhang,Mingliang Tian###
(1449633, 1449634)
Electrical Probing of Field-Driven Cascading Quantized Transitions of Skyrmion Cluster States in MnSi Nanowires.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(SC)
###Electrical Probing of Field-Driven Cascading Quantized Transitions of Skyrmion Cluster States in MnSi Nanowires|Haifeng Du,Dong Liang,Chiming Jin,Lingyao Kong,Matthew J. Stolt,Wei Ning,Jiyong Yang,Ying Xing,Jian Wang,Renchao Che,Jiadong Zang,Song Jin,Yuheng Zhang,Mingliang Tian###
(1449823, 1449826)
 Here we report the experimental demonstration of such scheme, wheremagnetic field-driven skyrmion cluster (SC) states with small numbers ofskyrmions were demonstrated to exist on the cross-sections of ultra-narrowsingle-crystal MnSi nanowires (NWs) with diameters, comparable to the skyrmionlattice constant (18 nm).
Featurization successful!
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnSi
###Electrical Probing of Field-Driven Cascading Quantized Transitions of Skyrmion Cluster States in MnSi Nanowires|Haifeng Du,Dong Liang,Chiming Jin,Lingyao Kong,Matthew J. Stolt,Wei Ning,Jiyong Yang,Ying Xing,Jian Wang,Renchao Che,Jiadong Zang,Song Jin,Yuheng Zhang,Mingliang Tian###
(1449868, 1449869)
 Here we report the experimental demonstration of such scheme, wheremagnetic field-driven skyrmion cluster (SC) states with small numbers ofskyrmions were demonstrated to exist on the cross-sections of ultra-narrowsingle-crystal MnSi nanowires (NWs) with diameters, comparable to the skyrmionlattice constant (18 nm).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Electrical Probing of Field-Driven Cascading Quantized Transitions of Skyrmion Cluster States in MnSi Nanowires|Haifeng Du,Dong Liang,Chiming Jin,Lingyao Kong,Matthew J. Stolt,Wei Ning,Jiyong Yang,Ying Xing,Jian Wang,Renchao Che,Jiadong Zang,Song Jin,Yuheng Zhang,Mingliang Tian###
(1449874, 1449874)
 Here we report the experimental demonstration of such scheme, wheremagnetic field-driven skyrmion cluster (SC) states with small numbers ofskyrmions were demonstrated to exist on the cross-sections of ultra-narrowsingle-crystal MnSi nanowires (NWs) with diameters, comparable to the skyrmionlattice constant (18 nm).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Electrical Probing of Field-Driven Cascading Quantized Transitions of Skyrmion Cluster States in MnSi Nanowires|Haifeng Du,Dong Liang,Chiming Jin,Lingyao Kong,Matthew J. Stolt,Wei Ning,Jiyong Yang,Ying Xing,Jian Wang,Renchao Che,Jiadong Zang,Song Jin,Yuheng Zhang,Mingliang Tian###
(1449903, 1449903)
 In contrast to the skyrmion lattice in bulk MnSisamples, the skyrmion clusters lead to anomalous magnetoresistance (MR)behavior measured under magnetic field parallel to the NW long axis, wherequantized jumps in MR are observed and directly associated with the change ofthe skyrmion number in the cluster, which is supported by Monte Carlosimulations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnSi
###Electrical Probing of Field-Driven Cascading Quantized Transitions of Skyrmion Cluster States in MnSi Nanowires|Haifeng Du,Dong Liang,Chiming Jin,Lingyao Kong,Matthew J. Stolt,Wei Ning,Jiyong Yang,Ying Xing,Jian Wang,Renchao Che,Jiadong Zang,Song Jin,Yuheng Zhang,Mingliang Tian###
(1449919, 1449920)
 In contrast to the skyrmion lattice in bulk MnSisamples, the skyrmion clusters lead to anomalous magnetoresistance (MR)behavior measured under magnetic field parallel to the NW long axis, wherequantized jumps in MR are observed and directly associated with the change ofthe skyrmion number in the cluster, which is supported by Monte Carlosimulations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NW
###Electrical Probing of Field-Driven Cascading Quantized Transitions of Skyrmion Cluster States in MnSi Nanowires|Haifeng Du,Dong Liang,Chiming Jin,Lingyao Kong,Matthew J. Stolt,Wei Ning,Jiyong Yang,Ying Xing,Jian Wang,Renchao Che,Jiadong Zang,Song Jin,Yuheng Zhang,Mingliang Tian###
(1449962, 1449963)
 In contrast to the skyrmion lattice in bulk MnSisamples, the skyrmion clusters lead to anomalous magnetoresistance (MR)behavior measured under magnetic field parallel to the NW long axis, wherequantized jumps in MR are observed and directly associated with the change ofthe skyrmion number in the cluster, which is supported by Monte Carlosimulations.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Colossal magnetoresistance in topological Kondo insulator|Igor O. Slieptsov,Igor N. Karnaukhov###
(1450168, 1450168)
 Inthis acticle we show that a colossal magnetoresistance is realized in the stateof the topological Kondo insulator, that is similar to the Kondo insulatorstate in the Kondo lattice.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Robust linear magnetoresistance in WTe2|Xing-Chen Pan,Yiming Pan,Juan Jiang,Huakun Zuo,Huimei Liu,Xuliang Chen,Zhongxia Wei,Shuai Zhang,Zhihe Wang,Xiangang Wan,Zhaorong Yang,Donglai Feng,Zhengcai Xia,Liang Li,Fengqi Song,Baigeng Wang,Yuheng Zhang,Guanghou Wang###
(1451092, 1451094)
Robust linear magnetoresistance in WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[180.0, 20, 'Tesla', 4],[218.0, 60, 'Tesla', 5],[237.0, 6.2, 'GPa', 5]

WTe2
###Robust linear magnetoresistance in WTe2|Xing-Chen Pan,Yiming Pan,Juan Jiang,Huakun Zuo,Huimei Liu,Xuliang Chen,Zhongxia Wei,Shuai Zhang,Zhihe Wang,Xiangang Wan,Zhaorong Yang,Donglai Feng,Zhengcai Xia,Liang Li,Fengqi Song,Baigeng Wang,Yuheng Zhang,Guanghou Wang###
(1451114, 1451116)
 Unsaturated magnetoresistance (MR) has been reported in WTe2, and remainsirrepressible up to very high field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 20, 'Tesla', 3],[196.0, 60, 'Tesla', 4],[215.0, 6.2, 'GPa', 4]

WTe2
###Robust linear magnetoresistance in WTe2|Xing-Chen Pan,Yiming Pan,Juan Jiang,Huakun Zuo,Huimei Liu,Xuliang Chen,Zhongxia Wei,Shuai Zhang,Zhihe Wang,Xiangang Wan,Zhaorong Yang,Donglai Feng,Zhengcai Xia,Liang Li,Fengqi Song,Baigeng Wang,Yuheng Zhang,Guanghou Wang###
(1451206, 1451208)
 Herein we report our observation of linear MR (LMR) inWTe2 crystals, the onset of which is first identified by constructing themobility spectra of the MR at low fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 20, 'Tesla', 1],[104.0, 60, 'Tesla', 2],[123.0, 6.2, 'GPa', 2]

WTe2
###Robust linear magnetoresistance in WTe2|Xing-Chen Pan,Yiming Pan,Juan Jiang,Huakun Zuo,Huimei Liu,Xuliang Chen,Zhongxia Wei,Shuai Zhang,Zhihe Wang,Xiangang Wan,Zhaorong Yang,Donglai Feng,Zhengcai Xia,Liang Li,Fengqi Song,Baigeng Wang,Yuheng Zhang,Guanghou Wang###
(1451467, 1451469)
 Our results suggest thatthe robust LMR is the low bound of the unsaturated MR in WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[193.0, 20, 'Tesla', 4],[155.0, 60, 'Tesla', 3],[136.0, 6.2, 'GPa', 3]

NbP
###Helicity protected ultrahigh mobility Weyl fermions in NbP|Zhen Wang,Yi Zheng,Zhixuan Shen,Yi Zhou,Xiaojun Yang,Yupeng Li,Chunmu Feng,Zhu-An Xu###
(1451494, 1451495)
Helicity protected ultrahigh mobility Weyl fermions in NbP.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 1.5, 'K', 2],[389.0, 1, '%', 6],[502.0, 10, 'K', 8]

TaAs
###Helicity protected ultrahigh mobility Weyl fermions in NbP|Zhen Wang,Yi Zheng,Zhixuan Shen,Yi Zhou,Xiaojun Yang,Yupeng Li,Chunmu Feng,Zhu-An Xu###
(1451511, 1451512)
 Non-centrosymmetric transition metal monopnictides, including TaAs, TaP,NbAs, and NbP, are emergent topological Weyl semimetals (WSMs) hosting exoticrelativistic Weyl fermions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 1.5, 'K', 1],[372.0, 1, '%', 5],[485.0, 10, 'K', 7]

TaP
###Helicity protected ultrahigh mobility Weyl fermions in NbP|Zhen Wang,Yi Zheng,Zhixuan Shen,Yi Zhou,Xiaojun Yang,Yupeng Li,Chunmu Feng,Zhu-An Xu###
(1451515, 1451516)
 Non-centrosymmetric transition metal monopnictides, including TaAs, TaP,NbAs, and NbP, are emergent topological Weyl semimetals (WSMs) hosting exoticrelativistic Weyl fermions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 1.5, 'K', 1],[368.0, 1, '%', 5],[481.0, 10, 'K', 7]

NbAs
###Helicity protected ultrahigh mobility Weyl fermions in NbP|Zhen Wang,Yi Zheng,Zhixuan Shen,Yi Zhou,Xiaojun Yang,Yupeng Li,Chunmu Feng,Zhu-An Xu###
(1451520, 1451521)
 Non-centrosymmetric transition metal monopnictides, including TaAs, TaP,NbAs, and NbP, are emergent topological Weyl semimetals (WSMs) hosting exoticrelativistic Weyl fermions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 1.5, 'K', 1],[363.0, 1, '%', 5],[476.0, 10, 'K', 7]

NbP
###Helicity protected ultrahigh mobility Weyl fermions in NbP|Zhen Wang,Yi Zheng,Zhixuan Shen,Yi Zhou,Xiaojun Yang,Yupeng Li,Chunmu Feng,Zhu-An Xu###
(1451526, 1451527)
 Non-centrosymmetric transition metal monopnictides, including TaAs, TaP,NbAs, and NbP, are emergent topological Weyl semimetals (WSMs) hosting exoticrelativistic Weyl fermions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 1.5, 'K', 1],[357.0, 1, '%', 5],[470.0, 10, 'K', 7]

WS
###Helicity protected ultrahigh mobility Weyl fermions in NbP|Zhen Wang,Yi Zheng,Zhixuan Shen,Yi Zhou,Xiaojun Yang,Yupeng Li,Chunmu Feng,Zhu-An Xu###
(1451541, 1451542)
 Non-centrosymmetric transition metal monopnictides, including TaAs, TaP,NbAs, and NbP, are emergent topological Weyl semimetals (WSMs) hosting exoticrelativistic Weyl fermions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 1.5, 'K', 1],[342.0, 1, '%', 5],[455.0, 10, 'K', 7]

In
###Helicity protected ultrahigh mobility Weyl fermions in NbP|Zhen Wang,Yi Zheng,Zhixuan Shen,Yi Zhou,Xiaojun Yang,Yupeng Li,Chunmu Feng,Zhu-An Xu###
(1451558, 1451558)
 In this letter, we elucidate the physical origin ofthe unprecedented charge carrier mobility of NbP, which can reach1times107 cm 2V-1s<missing VAR>-1 at 1.5 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 1.5, 'K', 0],[326.0, 1, '%', 4],[439.0, 10, 'K', 6]

NbP
###Helicity protected ultrahigh mobility Weyl fermions in NbP|Zhen Wang,Yi Zheng,Zhixuan Shen,Yi Zhou,Xiaojun Yang,Yupeng Li,Chunmu Feng,Zhu-An Xu###
(1451590, 1451591)
 In this letter, we elucidate the physical origin ofthe unprecedented charge carrier mobility of NbP, which can reach1times107 cm 2V-1s<missing VAR>-1 at 1.5 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 1.5, 'K', 0],[293.0, 1, '%', 4],[406.0, 10, 'K', 6]

V
###Helicity protected ultrahigh mobility Weyl fermions in NbP|Zhen Wang,Yi Zheng,Zhixuan Shen,Yi Zhou,Xiaojun Yang,Yupeng Li,Chunmu Feng,Zhu-An Xu###
(1451609, 1451609)
 In this letter, we elucidate the physical origin ofthe unprecedented charge carrier mobility of NbP, which can reach1times107 cm 2V-1s<missing VAR>-1 at 1.5 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 1.5, 'K', 0],[275.0, 1, '%', 4],[388.0, 10, 'K', 6]

NbP
###Helicity protected ultrahigh mobility Weyl fermions in NbP|Zhen Wang,Yi Zheng,Zhixuan Shen,Yi Zhou,Xiaojun Yang,Yupeng Li,Chunmu Feng,Zhu-An Xu###
(1451653, 1451654)
 Angle- andtemperature-dependent quantum oscillations, supported by density functiontheory calculations, reveal that NbP has the coexistence of p<missing VAR>- and n<missing VAR>-type WSM<missing VAR>pockets in the kz1.16pi/c<missing VAR> plane (W1-WSM) and in the kz0 planenear the high symmetry points Sigma (W2-WSM), respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 1.5, 'K', 1],[230.0, 1, '%', 3],[343.0, 10, 'K', 5]

WS
###Helicity protected ultrahigh mobility Weyl fermions in NbP|Zhen Wang,Yi Zheng,Zhixuan Shen,Yi Zhou,Xiaojun Yang,Yupeng Li,Chunmu Feng,Zhu-An Xu###
(1451673, 1451674)
 Angle- andtemperature-dependent quantum oscillations, supported by density functiontheory calculations, reveal that NbP has the coexistence of p<missing VAR>- and n<missing VAR>-type WSM<missing VAR>pockets in the kz1.16pi/c<missing VAR> plane (W1-WSM) and in the kz0 planenear the high symmetry points Sigma (W2-WSM), respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 1.5, 'K', 1],[210.0, 1, '%', 3],[323.0, 10, 'K', 5]

W1
###Helicity protected ultrahigh mobility Weyl fermions in NbP|Zhen Wang,Yi Zheng,Zhixuan Shen,Yi Zhou,Xiaojun Yang,Yupeng Li,Chunmu Feng,Zhu-An Xu###
(1451694, 1451695)
 Angle- andtemperature-dependent quantum oscillations, supported by density functiontheory calculations, reveal that NbP has the coexistence of p<missing VAR>- and n<missing VAR>-type WSM<missing VAR>pockets in the kz1.16pi/c<missing VAR> plane (W1-WSM) and in the kz0 planenear the high symmetry points Sigma (W2-WSM), respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 1.5, 'K', 1],[189.0, 1, '%', 3],[302.0, 10, 'K', 5]

WS
###Helicity protected ultrahigh mobility Weyl fermions in NbP|Zhen Wang,Yi Zheng,Zhixuan Shen,Yi Zhou,Xiaojun Yang,Yupeng Li,Chunmu Feng,Zhu-An Xu###
(1451697, 1451698)
 Angle- andtemperature-dependent quantum oscillations, supported by density functiontheory calculations, reveal that NbP has the coexistence of p<missing VAR>- and n<missing VAR>-type WSM<missing VAR>pockets in the kz1.16pi/c<missing VAR> plane (W1-WSM) and in the kz0 planenear the high symmetry points Sigma (W2-WSM), respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 1.5, 'K', 1],[186.0, 1, '%', 3],[299.0, 10, 'K', 5]

W2
###Helicity protected ultrahigh mobility Weyl fermions in NbP|Zhen Wang,Yi Zheng,Zhixuan Shen,Yi Zhou,Xiaojun Yang,Yupeng Li,Chunmu Feng,Zhu-An Xu###
(1451728, 1451729)
 Angle- andtemperature-dependent quantum oscillations, supported by density functiontheory calculations, reveal that NbP has the coexistence of p<missing VAR>- and n<missing VAR>-type WSM<missing VAR>pockets in the kz1.16pi/c<missing VAR> plane (W1-WSM) and in the kz0 planenear the high symmetry points Sigma (W2-WSM), respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 1.5, 'K', 1],[155.0, 1, '%', 3],[268.0, 10, 'K', 5]

WS
###Helicity protected ultrahigh mobility Weyl fermions in NbP|Zhen Wang,Yi Zheng,Zhixuan Shen,Yi Zhou,Xiaojun Yang,Yupeng Li,Chunmu Feng,Zhu-An Xu###
(1451731, 1451732)
 Angle- andtemperature-dependent quantum oscillations, supported by density functiontheory calculations, reveal that NbP has the coexistence of p<missing VAR>- and n<missing VAR>-type WSM<missing VAR>pockets in the kz1.16pi/c<missing VAR> plane (W1-WSM) and in the kz0 planenear the high symmetry points Sigma (W2-WSM), respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 1.5, 'K', 1],[152.0, 1, '%', 3],[265.0, 10, 'K', 5]

W2
###Helicity protected ultrahigh mobility Weyl fermions in NbP|Zhen Wang,Yi Zheng,Zhixuan Shen,Yi Zhou,Xiaojun Yang,Yupeng Li,Chunmu Feng,Zhu-An Xu###
(1451746, 1451747)
 Uniquely, eachW2-WSM<missing VAR> pocket forms a large dumbbell-shaped Fermi surface (FS) enclosing twoneighboring Weyl nodes with the opposite chirality.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 1.5, 'K', 2],[137.0, 1, '%', 2],[250.0, 10, 'K', 4]

WS
###Helicity protected ultrahigh mobility Weyl fermions in NbP|Zhen Wang,Yi Zheng,Zhixuan Shen,Yi Zhou,Xiaojun Yang,Yupeng Li,Chunmu Feng,Zhu-An Xu###
(1451749, 1451750)
 Uniquely, eachW2-WSM<missing VAR> pocket forms a large dumbbell-shaped Fermi surface (FS) enclosing twoneighboring Weyl nodes with the opposite chirality.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 1.5, 'K', 2],[134.0, 1, '%', 2],[247.0, 10, 'K', 4]

(FS)
###Helicity protected ultrahigh mobility Weyl fermions in NbP|Zhen Wang,Yi Zheng,Zhixuan Shen,Yi Zhou,Xiaojun Yang,Yupeng Li,Chunmu Feng,Zhu-An Xu###
(1451769, 1451772)
 Uniquely, eachW2-WSM<missing VAR> pocket forms a large dumbbell-shaped Fermi surface (FS) enclosing twoneighboring Weyl nodes with the opposite chirality.
Featurization successful!
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 1.5, 'K', 2],[112.0, 1, '%', 2],[225.0, 10, 'K', 4]

NbP
###Helicity protected ultrahigh mobility Weyl fermions in NbP|Zhen Wang,Yi Zheng,Zhixuan Shen,Yi Zhou,Xiaojun Yang,Yupeng Li,Chunmu Feng,Zhu-An Xu###
(1451803, 1451804)
 The magneto-transport inNbP is dominated by these highly anisotropic W2-WSM<missing VAR> pockets, in which Weylfermions are well protected from defect backscattering by real spinconservation associated to the chiral nodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, 1.5, 'K', 3],[80.0, 1, '%', 1],[193.0, 10, 'K', 3]

W2
###Helicity protected ultrahigh mobility Weyl fermions in NbP|Zhen Wang,Yi Zheng,Zhixuan Shen,Yi Zhou,Xiaojun Yang,Yupeng Li,Chunmu Feng,Zhu-An Xu###
(1451818, 1451819)
 The magneto-transport inNbP is dominated by these highly anisotropic W2-WSM<missing VAR> pockets, in which Weylfermions are well protected from defect backscattering by real spinconservation associated to the chiral nodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[201.0, 1.5, 'K', 3],[65.0, 1, '%', 1],[178.0, 10, 'K', 3]

WS
###Helicity protected ultrahigh mobility Weyl fermions in NbP|Zhen Wang,Yi Zheng,Zhixuan Shen,Yi Zhou,Xiaojun Yang,Yupeng Li,Chunmu Feng,Zhu-An Xu###
(1451821, 1451822)
 The magneto-transport inNbP is dominated by these highly anisotropic W2-WSM<missing VAR> pockets, in which Weylfermions are well protected from defect backscattering by real spinconservation associated to the chiral nodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[204.0, 1.5, 'K', 3],[62.0, 1, '%', 1],[175.0, 10, 'K', 3]

Cr
###Helicity protected ultrahigh mobility Weyl fermions in NbP|Zhen Wang,Yi Zheng,Zhixuan Shen,Yi Zhou,Xiaojun Yang,Yupeng Li,Chunmu Feng,Zhu-An Xu###
(1451887, 1451887)
 However, with a minimal doping ofsim1% Cr, the mobility of NbP is degraded by more than two order ofmagnitude, due to the invalid of helicity protection to magnetic impurities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[270.0, 1.5, 'K', 4],[3.0, 1, '%', 0],[110.0, 10, 'K', 2]

NbP
###Helicity protected ultrahigh mobility Weyl fermions in NbP|Zhen Wang,Yi Zheng,Zhixuan Shen,Yi Zhou,Xiaojun Yang,Yupeng Li,Chunmu Feng,Zhu-An Xu###
(1451896, 1451897)
 However, with a minimal doping ofsim1% Cr, the mobility of NbP is degraded by more than two order ofmagnitude, due to the invalid of helicity protection to magnetic impurities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[279.0, 1.5, 'K', 4],[12.0, 1, '%', 0],[100.0, 10, 'K', 2]

W1
###Helicity protected ultrahigh mobility Weyl fermions in NbP|Zhen Wang,Yi Zheng,Zhixuan Shen,Yi Zhou,Xiaojun Yang,Yupeng Li,Chunmu Feng,Zhu-An Xu###
(1451977, 1451978)
Helicity protected Weyl fermion transport is also manifested in chiral anomalyinduced negative magnetoresistance, controlled by the W1-WSM<missing VAR> states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[360.0, 1.5, 'K', 5],[93.0, 1, '%', 1],[19.0, 10, 'K', 1]

WS
###Helicity protected ultrahigh mobility Weyl fermions in NbP|Zhen Wang,Yi Zheng,Zhixuan Shen,Yi Zhou,Xiaojun Yang,Yupeng Li,Chunmu Feng,Zhu-An Xu###
(1451980, 1451981)
Helicity protected Weyl fermion transport is also manifested in chiral anomalyinduced negative magnetoresistance, controlled by the W1-WSM<missing VAR> states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[363.0, 1.5, 'K', 5],[96.0, 1, '%', 1],[16.0, 10, 'K', 1]

In
###Helicity protected ultrahigh mobility Weyl fermions in NbP|Zhen Wang,Yi Zheng,Zhixuan Shen,Yi Zhou,Xiaojun Yang,Yupeng Li,Chunmu Feng,Zhu-An Xu###
(1451987, 1451987)
 In thequantum regime below 10 K, the intervalley scattering time by impuritiesbecomes a large constant, producing the sharp and nearly identical conductivityenhancement at low magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[370.0, 1.5, 'K', 6],[103.0, 1, '%', 2],[10.0, 10, 'K', 0]

MgO/CoFe
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(1452070, 1452074)
Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

S
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(1452100, 1452100)
 Spin-transfer-torque magnetic random access memory (STT-MRAM) attractsextensive attentions due to its non-volatility, high density and low powerconsumption.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(1452150, 1452150)
 The core device in STT-MRAM<missing VAR> is CoFeB/MgO-based magnetic tunneljunction (MTJ), which possesses a high tunnel magnetoresistance ratio as wellas a large value of perpendicular magnetic anisotropy (PM<missing VAR>A).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFeB/MgO
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(1452161, 1452166)
 The core device in STT-MRAM<missing VAR> is CoFeB/MgO-based magnetic tunneljunction (MTJ), which possesses a high tunnel magnetoresistance ratio as wellas a large value of perpendicular magnetic anisotropy (PM<missing VAR>A).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

P
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(1452220, 1452220)
 The core device in STT-MRAM<missing VAR> is CoFeB/MgO-based magnetic tunneljunction (MTJ), which possesses a high tunnel magnetoresistance ratio as wellas a large value of perpendicular magnetic anisotropy (PM<missing VAR>A).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFeB
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(1452249, 1452251)
 It has beenexperimentally proven that a capping layer coating on CoFeB layer is essentialto obtain a strong PM<missing VAR>A.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(1452268, 1452268)
 It has beenexperimentally proven that a capping layer coating on CoFeB layer is essentialto obtain a strong PM<missing VAR>A.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(1452294, 1452294)
 In this paper, we investigate the origin of the PM<missing VAR>A inMgO/CoFe/metallic capping layer structures by using a first-principlescomputation scheme.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(1452313, 1452313)
 In this paper, we investigate the origin of the PM<missing VAR>A inMgO/CoFe/metallic capping layer structures by using a first-principlescomputation scheme.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO/CoFe
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(1452320, 1452324)
 In this paper, we investigate the origin of the PM<missing VAR>A inMgO/CoFe/metallic capping layer structures by using a first-principlescomputation scheme.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

P
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(1452356, 1452356)
 The trend of PM<missing VAR>A variation with different capping materialsagrees well with experimental results.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(1452390, 1452390)
 We find that interfacial PM<missing VAR>A in thethree-layer structures comes from both the MgO/CoFe and CoFe/capping layerinterfaces, which can be analyzed separately.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO/CoFe
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(1452413, 1452417)
 We find that interfacial PM<missing VAR>A in thethree-layer structures comes from both the MgO/CoFe and CoFe/capping layerinterfaces, which can be analyzed separately.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

CoFe
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(1452421, 1452422)
 We find that interfacial PM<missing VAR>A in thethree-layer structures comes from both the MgO/CoFe and CoFe/capping layerinterfaces, which can be analyzed separately.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(1452448, 1452448)
 Furthermore, the PM<missing VAR>As in theCoFe/capping layer interfaces are analyzed through resolving the magneticanisotropy energy by layer and orbital.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(1452450, 1452450)
 Furthermore, the PM<missing VAR>As in theCoFe/capping layer interfaces are analyzed through resolving the magneticanisotropy energy by layer and orbital.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFe
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(1452457, 1452458)
 Furthermore, the PM<missing VAR>As in theCoFe/capping layer interfaces are analyzed through resolving the magneticanisotropy energy by layer and orbital.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(1452498, 1452498)
 The variation of PM<missing VAR>A with differentcapping materials is attributed to the different hybridizations of both d<missing VAR> and p<missing VAR>orbitals via spin-orbital coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Origin of interfacial perpendicular magnetic anisotropy in MgO/CoFe/metallic capping layer structures|Shouzhong Peng,Mengxing Wang,Hongxin Yang,Lang Zeng,Jiang Nan,Jiaqi Zhou,Youguang Zhang,Ali Hallal,Mairbek Chshiev,Kang L. Wang,Qianfan Zhang,Weisheng Zhao###
(1452568, 1452568)
 This work can significantly benefit theresearch and development of nanoscale STT-MRAM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PdBi2
###Chemical doping and high pressure studies of layered beta-PdBi2 single crystals|Kui Zhao,Bing Lv,Yu-Yi Xue,Xi-Yu Zhu,Liangzi Deng,Zheng Wu,C. W. Chu###
(1452604, 1452606)
Chemical doping and high pressure studies of layered beta-PdBi2 single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[236.0, 5.4, 'K', 4],[251.0, 2, 'K', 4],[384.0, 50, 'K', 6]

PdBi2
###Chemical doping and high pressure studies of layered beta-PdBi2 single crystals|Kui Zhao,Bing Lv,Yu-Yi Xue,Xi-Yu Zhu,Liangzi Deng,Zheng Wu,C. W. Chu###
(1452636, 1452638)
 We have systematically grown large single crystals of layered compoundbeta-PdBi2, both the hole-doped PdBi2-xPbx and the electron-doped NaxPdBi2, andstudied their magnetic and transport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[204.0, 5.4, 'K', 3],[219.0, 2, 'K', 3],[352.0, 50, 'K', 5]

PdBi2-x
###Chemical doping and high pressure studies of layered beta-PdBi2 single crystals|Kui Zhao,Bing Lv,Yu-Yi Xue,Xi-Yu Zhu,Liangzi Deng,Zheng Wu,C. W. Chu###
(1452649, 1452653)
 We have systematically grown large single crystals of layered compoundbeta-PdBi2, both the hole-doped PdBi2-xPbx and the electron-doped NaxPdBi2, andstudied their magnetic and transport properties.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[189.0, 5.4, 'K', 3],[204.0, 2, 'K', 3],[337.0, 50, 'K', 5]

PdBi2
###Chemical doping and high pressure studies of layered beta-PdBi2 single crystals|Kui Zhao,Bing Lv,Yu-Yi Xue,Xi-Yu Zhu,Liangzi Deng,Zheng Wu,C. W. Chu###
(1452665, 1452667)
 We have systematically grown large single crystals of layered compoundbeta-PdBi2, both the hole-doped PdBi2-xPbx and the electron-doped NaxPdBi2, andstudied their magnetic and transport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 5.4, 'K', 3],[190.0, 2, 'K', 3],[323.0, 50, 'K', 5]

PdBi2
###Chemical doping and high pressure studies of layered beta-PdBi2 single crystals|Kui Zhao,Bing Lv,Yu-Yi Xue,Xi-Yu Zhu,Liangzi Deng,Zheng Wu,C. W. Chu###
(1452695, 1452697)
 Hall-effect measurement onPdBi2, PdBi1.8Pb0.2, and Na0.057PdBi2 shows that the charge transport isdominated by electrons in all of the samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 5.4, 'K', 2],[160.0, 2, 'K', 2],[293.0, 50, 'K', 4]

PdBi1.8Pb0.2
###Chemical doping and high pressure studies of layered beta-PdBi2 single crystals|Kui Zhao,Bing Lv,Yu-Yi Xue,Xi-Yu Zhu,Liangzi Deng,Zheng Wu,C. W. Chu###
(1452700, 1452704)
 Hall-effect measurement onPdBi2, PdBi1.8Pb0.2, and Na0.057PdBi2 shows that the charge transport isdominated by electrons in all of the samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.06666666666666667,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 5.4, 'K', 2],[153.0, 2, 'K', 2],[286.0, 50, 'K', 4]

Na0.057PdBi2
###Chemical doping and high pressure studies of layered beta-PdBi2 single crystals|Kui Zhao,Bing Lv,Yu-Yi Xue,Xi-Yu Zhu,Liangzi Deng,Zheng Wu,C. W. Chu###
(1452709, 1452713)
 Hall-effect measurement onPdBi2, PdBi1.8Pb0.2, and Na0.057PdBi2 shows that the charge transport isdominated by electrons in all of the samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0.018645731108930325,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.32711808963035655,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6542361792607131,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 5.4, 'K', 2],[144.0, 2, 'K', 2],[277.0, 50, 'K', 4]

Pb
###Chemical doping and high pressure studies of layered beta-PdBi2 single crystals|Kui Zhao,Bing Lv,Yu-Yi Xue,Xi-Yu Zhu,Liangzi Deng,Zheng Wu,C. W. Chu###
(1452760, 1452760)
 The electron concentration issubstantially reduced upon Pb-doping in PdBi2-xPbx and increased uponNa-intercalation in NaxPdBi2, indicating the effective hole-doping by Pb andelectron-doping by Na.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 5.4, 'K', 1],[97.0, 2, 'K', 1],[230.0, 50, 'K', 3]

PdBi2-x
###Chemical doping and high pressure studies of layered beta-PdBi2 single crystals|Kui Zhao,Bing Lv,Yu-Yi Xue,Xi-Yu Zhu,Liangzi Deng,Zheng Wu,C. W. Chu###
(1452766, 1452770)
 The electron concentration issubstantially reduced upon Pb-doping in PdBi2-xPbx and increased uponNa-intercalation in NaxPdBi2, indicating the effective hole-doping by Pb andelectron-doping by Na.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[72.0, 5.4, 'K', 1],[87.0, 2, 'K', 1],[220.0, 50, 'K', 3]

Na
###Chemical doping and high pressure studies of layered beta-PdBi2 single crystals|Kui Zhao,Bing Lv,Yu-Yi Xue,Xi-Yu Zhu,Liangzi Deng,Zheng Wu,C. W. Chu###
(1452780, 1452780)
 The electron concentration issubstantially reduced upon Pb-doping in PdBi2-xPbx and increased uponNa-intercalation in NaxPdBi2, indicating the effective hole-doping by Pb andelectron-doping by Na.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 5.4, 'K', 1],[77.0, 2, 'K', 1],[210.0, 50, 'K', 3]

PdBi2
###Chemical doping and high pressure studies of layered beta-PdBi2 single crystals|Kui Zhao,Bing Lv,Yu-Yi Xue,Xi-Yu Zhu,Liangzi Deng,Zheng Wu,C. W. Chu###
(1452787, 1452789)
 The electron concentration issubstantially reduced upon Pb-doping in PdBi2-xPbx and increased uponNa-intercalation in NaxPdBi2, indicating the effective hole-doping by Pb andelectron-doping by Na.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 5.4, 'K', 1],[68.0, 2, 'K', 1],[201.0, 50, 'K', 3]

Pb
###Chemical doping and high pressure studies of layered beta-PdBi2 single crystals|Kui Zhao,Bing Lv,Yu-Yi Xue,Xi-Yu Zhu,Liangzi Deng,Zheng Wu,C. W. Chu###
(1452804, 1452804)
 The electron concentration issubstantially reduced upon Pb-doping in PdBi2-xPbx and increased uponNa-intercalation in NaxPdBi2, indicating the effective hole-doping by Pb andelectron-doping by Na.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 5.4, 'K', 1],[53.0, 2, 'K', 1],[186.0, 50, 'K', 3]

Na
###Chemical doping and high pressure studies of layered beta-PdBi2 single crystals|Kui Zhao,Bing Lv,Yu-Yi Xue,Xi-Yu Zhu,Liangzi Deng,Zheng Wu,C. W. Chu###
(1452815, 1452815)
 The electron concentration issubstantially reduced upon Pb-doping in PdBi2-xPbx and increased uponNa-intercalation in NaxPdBi2, indicating the effective hole-doping by Pb andelectron-doping by Na.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 5.4, 'K', 1],[42.0, 2, 'K', 1],[175.0, 50, 'K', 3]

(Tc)
###Chemical doping and high pressure studies of layered beta-PdBi2 single crystals|Kui Zhao,Bing Lv,Yu-Yi Xue,Xi-Yu Zhu,Liangzi Deng,Zheng Wu,C. W. Chu###
(1452837, 1452839)
 We observed a monotonic decrease of superconductingtransition temperature (Tc) from 5.4K in undoped PdBi2 to less than 2K for x<missing VAR> >0.35 in hole-doped PdBi2-xPbx.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 5.4, 'K', 0],[18.0, 2, 'K', 0],[151.0, 50, 'K', 2]

PdBi2
###Chemical doping and high pressure studies of layered beta-PdBi2 single crystals|Kui Zhao,Bing Lv,Yu-Yi Xue,Xi-Yu Zhu,Liangzi Deng,Zheng Wu,C. W. Chu###
(1452848, 1452850)
 We observed a monotonic decrease of superconductingtransition temperature (Tc) from 5.4K in undoped PdBi2 to less than 2K for x<missing VAR> >0.35 in hole-doped PdBi2-xPbx.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 5.4, 'K', 0],[7.0, 2, 'K', 0],[140.0, 50, 'K', 2]

PdBi2-x
###Chemical doping and high pressure studies of layered beta-PdBi2 single crystals|Kui Zhao,Bing Lv,Yu-Yi Xue,Xi-Yu Zhu,Liangzi Deng,Zheng Wu,C. W. Chu###
(1452874, 1452878)
 We observed a monotonic decrease of superconductingtransition temperature (Tc) from 5.4K in undoped PdBi2 to less than 2K for x<missing VAR> >0.35 in hole-doped PdBi2-xPbx.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[32.0, 5.4, 'K', 0],[17.0, 2, 'K', 0],[112.0, 50, 'K', 2]

Tc
###Chemical doping and high pressure studies of layered beta-PdBi2 single crystals|Kui Zhao,Bing Lv,Yu-Yi Xue,Xi-Yu Zhu,Liangzi Deng,Zheng Wu,C. W. Chu###
(1452893, 1452893)
 Meanwhile, a rapid decrease of Tc with the Naintercalation is also observed in the electron-doped NaxPdBi2, which is indisagreement with the theoretical expectation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 5.4, 'K', 1],[36.0, 2, 'K', 1],[97.0, 50, 'K', 1]

Na
###Chemical doping and high pressure studies of layered beta-PdBi2 single crystals|Kui Zhao,Bing Lv,Yu-Yi Xue,Xi-Yu Zhu,Liangzi Deng,Zheng Wu,C. W. Chu###
(1452899, 1452899)
 Meanwhile, a rapid decrease of Tc with the Naintercalation is also observed in the electron-doped NaxPdBi2, which is indisagreement with the theoretical expectation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 5.4, 'K', 1],[42.0, 2, 'K', 1],[91.0, 50, 'K', 1]

PdBi2
###Chemical doping and high pressure studies of layered beta-PdBi2 single crystals|Kui Zhao,Bing Lv,Yu-Yi Xue,Xi-Yu Zhu,Liangzi Deng,Zheng Wu,C. W. Chu###
(1452919, 1452921)
 Meanwhile, a rapid decrease of Tc with the Naintercalation is also observed in the electron-doped NaxPdBi2, which is indisagreement with the theoretical expectation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 5.4, 'K', 1],[62.0, 2, 'K', 1],[69.0, 50, 'K', 1]

In
###Chemical doping and high pressure studies of layered beta-PdBi2 single crystals|Kui Zhao,Bing Lv,Yu-Yi Xue,Xi-Yu Zhu,Liangzi Deng,Zheng Wu,C. W. Chu###
(1452942, 1452942)
 In addition, both themagnetoresistance and Hall resistance further reveal evidence for a possiblespin density wave (SD<missing VAR>W)-like transition below 50K in the Na-intercalated PdBi2sample.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 5.4, 'K', 2],[85.0, 2, 'K', 2],[48.0, 50, 'K', 0]

S
###Chemical doping and high pressure studies of layered beta-PdBi2 single crystals|Kui Zhao,Bing Lv,Yu-Yi Xue,Xi-Yu Zhu,Liangzi Deng,Zheng Wu,C. W. Chu###
(1452980, 1452980)
 In addition, both themagnetoresistance and Hall resistance further reveal evidence for a possiblespin density wave (SD<missing VAR>W)-like transition below 50K in the Na-intercalated PdBi2sample.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 5.4, 'K', 2],[123.0, 2, 'K', 2],[10.0, 50, 'K', 0]

W
###Chemical doping and high pressure studies of layered beta-PdBi2 single crystals|Kui Zhao,Bing Lv,Yu-Yi Xue,Xi-Yu Zhu,Liangzi Deng,Zheng Wu,C. W. Chu###
(1452982, 1452982)
 In addition, both themagnetoresistance and Hall resistance further reveal evidence for a possiblespin density wave (SD<missing VAR>W)-like transition below 50K in the Na-intercalated PdBi2sample.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 5.4, 'K', 2],[125.0, 2, 'K', 2],[8.0, 50, 'K', 0]

Na
###Chemical doping and high pressure studies of layered beta-PdBi2 single crystals|Kui Zhao,Bing Lv,Yu-Yi Xue,Xi-Yu Zhu,Liangzi Deng,Zheng Wu,C. W. Chu###
(1452996, 1452996)
 In addition, both themagnetoresistance and Hall resistance further reveal evidence for a possiblespin density wave (SD<missing VAR>W)-like transition below 50K in the Na-intercalated PdBi2sample.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 5.4, 'K', 2],[139.0, 2, 'K', 2],[6.0, 50, 'K', 0]

PdBi2
###Chemical doping and high pressure studies of layered beta-PdBi2 single crystals|Kui Zhao,Bing Lv,Yu-Yi Xue,Xi-Yu Zhu,Liangzi Deng,Zheng Wu,C. W. Chu###
(1453000, 1453002)
 In addition, both themagnetoresistance and Hall resistance further reveal evidence for a possiblespin density wave (SD<missing VAR>W)-like transition below 50K in the Na-intercalated PdBi2sample.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 5.4, 'K', 2],[143.0, 2, 'K', 2],[10.0, 50, 'K', 0]

PdBi2
###Chemical doping and high pressure studies of layered beta-PdBi2 single crystals|Kui Zhao,Bing Lv,Yu-Yi Xue,Xi-Yu Zhu,Liangzi Deng,Zheng Wu,C. W. Chu###
(1453051, 1453053)
 Meanwhile, high pressure study of the undoped PdBi2 shows thatthe Tc is linearly suppressed under pressure with a d<missing VAR>Tc/d<missing VAR>P coefficient of-0.28K/G<missing VAR>Pa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[209.0, 5.4, 'K', 4],[194.0, 2, 'K', 4],[61.0, 50, 'K', 2]

Tc
###Chemical doping and high pressure studies of layered beta-PdBi2 single crystals|Kui Zhao,Bing Lv,Yu-Yi Xue,Xi-Yu Zhu,Liangzi Deng,Zheng Wu,C. W. Chu###
(1453062, 1453062)
 Meanwhile, high pressure study of the undoped PdBi2 shows thatthe Tc is linearly suppressed under pressure with a d<missing VAR>Tc/d<missing VAR>P coefficient of-0.28K/G<missing VAR>Pa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[220.0, 5.4, 'K', 4],[205.0, 2, 'K', 4],[72.0, 50, 'K', 2]

Tc
###Chemical doping and high pressure studies of layered beta-PdBi2 single crystals|Kui Zhao,Bing Lv,Yu-Yi Xue,Xi-Yu Zhu,Liangzi Deng,Zheng Wu,C. W. Chu###
(1453079, 1453079)
 Meanwhile, high pressure study of the undoped PdBi2 shows thatthe Tc is linearly suppressed under pressure with a d<missing VAR>Tc/d<missing VAR>P coefficient of-0.28K/G<missing VAR>Pa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[237.0, 5.4, 'K', 4],[222.0, 2, 'K', 4],[89.0, 50, 'K', 2]

P
###Chemical doping and high pressure studies of layered beta-PdBi2 single crystals|Kui Zhao,Bing Lv,Yu-Yi Xue,Xi-Yu Zhu,Liangzi Deng,Zheng Wu,C. W. Chu###
(1453082, 1453082)
 Meanwhile, high pressure study of the undoped PdBi2 shows thatthe Tc is linearly suppressed under pressure with a d<missing VAR>Tc/d<missing VAR>P coefficient of-0.28K/G<missing VAR>Pa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[240.0, 5.4, 'K', 4],[225.0, 2, 'K', 4],[92.0, 50, 'K', 2]

K
###Chemical doping and high pressure studies of layered beta-PdBi2 single crystals|Kui Zhao,Bing Lv,Yu-Yi Xue,Xi-Yu Zhu,Liangzi Deng,Zheng Wu,C. W. Chu###
(1453091, 1453091)
 Meanwhile, high pressure study of the undoped PdBi2 shows thatthe Tc is linearly suppressed under pressure with a d<missing VAR>Tc/d<missing VAR>P coefficient of-0.28K/G<missing VAR>Pa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[249.0, 5.4, 'K', 4],[234.0, 2, 'K', 4],[101.0, 50, 'K', 2]

Pa
###Chemical doping and high pressure studies of layered beta-PdBi2 single crystals|Kui Zhao,Bing Lv,Yu-Yi Xue,Xi-Yu Zhu,Liangzi Deng,Zheng Wu,C. W. Chu###
(1453094, 1453094)
 Meanwhile, high pressure study of the undoped PdBi2 shows thatthe Tc is linearly suppressed under pressure with a d<missing VAR>Tc/d<missing VAR>P coefficient of-0.28K/G<missing VAR>Pa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0
[252.0, 5.4, 'K', 4],[237.0, 2, 'K', 4],[104.0, 50, 'K', 2]

YbRh2Si2
###Spin-flip scattering of critical quasiparticles and the phase diagram of YbRh2Si2|Peter Woelfle,Elihu Abrahams###
(1453127, 1453131)
Spin-flip scattering of critical quasiparticles and the phase diagram of YbRh2Si2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YbRh2Si2
###Spin-flip scattering of critical quasiparticles and the phase diagram of YbRh2Si2|Peter Woelfle,Elihu Abrahams###
(1453157, 1453161)
 Several observed transport and thermodynamic properties of the heavy-fermioncompound YbRh2Si2 in the quantum critical regime are unusual and suggest thatthe fermionic quasiparticles are critical, characterized by a scale-dependentdiverging effective mass.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Spin-flip scattering of critical quasiparticles and the phase diagram of YbRh2Si2|Peter Woelfle,Elihu Abrahams###
(1453233, 1453233)
 A theory based on the concept of criticalquasiparticles (CQ<missing VAR>P) scattering off antiferromagnetic spin fluctuations in astrong-coupling regime has been shown to successfully explain the unusualexisting data and to predict a number of so far unobserved properties.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Spin-flip scattering of critical quasiparticles and the phase diagram of YbRh2Si2|Peter Woelfle,Elihu Abrahams###
(1453235, 1453235)
 A theory based on the concept of criticalquasiparticles (CQ<missing VAR>P) scattering off antiferromagnetic spin fluctuations in astrong-coupling regime has been shown to successfully explain the unusualexisting data and to predict a number of so far unobserved properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin-flip scattering of critical quasiparticles and the phase diagram of YbRh2Si2|Peter Woelfle,Elihu Abrahams###
(1453301, 1453301)
 In thispaper, we point out a new feature of a magnetic field-tuned quantum criticalpoint of a heavy-fermion metal anomalies in the transport and thermodynamicproperties caused by the freezing out of spin-flip scattering of criticalquasiparticles and the scattering off collective spin excitations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(H)
###Spin-flip scattering of critical quasiparticles and the phase diagram of YbRh2Si2|Peter Woelfle,Elihu Abrahams###
(1453493, 1453495)
 That behavior has been described asa crossover line T<missing VAR>(H) in the T<missing VAR> - H phase diagram of YbRh2Si2.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Spin-flip scattering of critical quasiparticles and the phase diagram of YbRh2Si2|Peter Woelfle,Elihu Abrahams###
(1453505, 1453505)
 That behavior has been described asa crossover line T<missing VAR>(H) in the T<missing VAR> - H phase diagram of YbRh2Si2.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YbRh2Si2
###Spin-flip scattering of critical quasiparticles and the phase diagram of YbRh2Si2|Peter Woelfle,Elihu Abrahams###
(1453513, 1453517)
 That behavior has been described asa crossover line T<missing VAR>(H) in the T<missing VAR> - H phase diagram of YbRh2Si2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbN
###Magnetoresistance and gating effects in ultrathin NbN-$\rm Bi_2Se_3$ bilayers|Gad Koren###
(1453628, 1453629)
Magnetoresistance and gating effects in ultrathin NbN-rm Bi2Se3 bilayers.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 3, 'nm', 2],[102.0, 10, 'nm', 2],[257.0, 0, 'and', 4],[301.0, 30, 'K', 5]

Bi2Se3
###Magnetoresistance and gating effects in ultrathin NbN-$\rm Bi_2Se_3$ bilayers|Gad Koren###
(1453633, 1453636)
Magnetoresistance and gating effects in ultrathin NbN-rm Bi2Se3 bilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 3, 'nm', 2],[95.0, 10, 'nm', 2],[250.0, 0, 'and', 4],[294.0, 30, 'K', 5]

Bi2Se3
###Magnetoresistance and gating effects in ultrathin NbN-$\rm Bi_2Se_3$ bilayers|Gad Koren###
(1453645, 1453648)
 Ultrathin rm Bi2Se3-NbN bilayers comprise a simple proximity system of atopological insulator and an s<missing VAR>-wave superconductor for studying gating effectson topological superconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 3, 'nm', 1],[83.0, 10, 'nm', 1],[238.0, 0, 'and', 3],[282.0, 30, 'K', 4]

NbN
###Magnetoresistance and gating effects in ultrathin NbN-$\rm Bi_2Se_3$ bilayers|Gad Koren###
(1453650, 1453651)
 Ultrathin rm Bi2Se3-NbN bilayers comprise a simple proximity system of atopological insulator and an s<missing VAR>-wave superconductor for studying gating effectson topological superconductors.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 3, 'nm', 1],[80.0, 10, 'nm', 1],[235.0, 0, 'and', 3],[279.0, 30, 'K', 4]

NbN
###Magnetoresistance and gating effects in ultrathin NbN-$\rm Bi_2Se_3$ bilayers|Gad Koren###
(1453711, 1453712)
 Here we report on 3 nm thick NbN layers ofweakly connected superconducting islands, overlayed with 10 nm thick rmBi2Se3 film which facilitates enhanced proximity coupling between them.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 3, 'nm', 0],[19.0, 10, 'nm', 0],[174.0, 0, 'and', 2],[218.0, 30, 'K', 3]

Bi2Se3
###Magnetoresistance and gating effects in ultrathin NbN-$\rm Bi_2Se_3$ bilayers|Gad Koren###
(1453738, 1453741)
 Here we report on 3 nm thick NbN layers ofweakly connected superconducting islands, overlayed with 10 nm thick rmBi2Se3 film which facilitates enhanced proximity coupling between them.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 3, 'nm', 0],[7.0, 10, 'nm', 0],[145.0, 0, 'and', 2],[189.0, 30, 'K', 3]

H
###Magnetoresistance and gating effects in ultrathin NbN-$\rm Bi_2Se_3$ bilayers|Gad Koren###
(1453831, 1453831)
 We measured the magnetoresistance(MR) of these bilayers versus temperature with and without a magnetic field Hnormal to the wafer (MR[R<missing VAR>(H)-R<missing VAR>(0)]/[R<missing VAR>(H)R<missing VAR>(0)]/2), and under threeelectric gate-fields of 0 and pm2 M<missing VAR>V/cm.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 3, 'nm', 2],[100.0, 10, 'nm', 2],[55.0, 0, 'and', 0],[99.0, 30, 'K', 1]

(H)
###Magnetoresistance and gating effects in ultrathin NbN-$\rm Bi_2Se_3$ bilayers|Gad Koren###
(1453847, 1453849)
 We measured the magnetoresistance(MR) of these bilayers versus temperature with and without a magnetic field Hnormal to the wafer (MR[R<missing VAR>(H)-R<missing VAR>(0)]/[R<missing VAR>(H)R<missing VAR>(0)]/2), and under threeelectric gate-fields of 0 and pm2 M<missing VAR>V/cm.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 3, 'nm', 2],[116.0, 10, 'nm', 2],[37.0, 0, 'and', 0],[81.0, 30, 'K', 1]

(H)
###Magnetoresistance and gating effects in ultrathin NbN-$\rm Bi_2Se_3$ bilayers|Gad Koren###
(1453859, 1453861)
 We measured the magnetoresistance(MR) of these bilayers versus temperature with and without a magnetic field Hnormal to the wafer (MR[R<missing VAR>(H)-R<missing VAR>(0)]/[R<missing VAR>(H)R<missing VAR>(0)]/2), and under threeelectric gate-fields of 0 and pm2 M<missing VAR>V/cm.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 3, 'nm', 2],[128.0, 10, 'nm', 2],[25.0, 0, 'and', 0],[69.0, 30, 'K', 1]

V
###Magnetoresistance and gating effects in ultrathin NbN-$\rm Bi_2Se_3$ bilayers|Gad Koren###
(1453892, 1453892)
 We measured the magnetoresistance(MR) of these bilayers versus temperature with and without a magnetic field Hnormal to the wafer (MR[R<missing VAR>(H)-R<missing VAR>(0)]/[R<missing VAR>(H)R<missing VAR>(0)]/2), and under threeelectric gate-fields of 0 and pm2 M<missing VAR>V/cm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[185.0, 3, 'nm', 2],[161.0, 10, 'nm', 2],[6.0, 0, 'and', 0],[38.0, 30, 'K', 1]

NbN
###Magnetoresistance and gating effects in ultrathin NbN-$\rm Bi_2Se_3$ bilayers|Gad Koren###
(1453994, 1453995)
 The results arediscussed in terms of vortex physics, and the origin of the different MR peaksis identified and attributed to flux-flow MR in the isolated NbN islands andthe different proximity regions in the rm Bi2Se3 cap-layer.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[287.0, 3, 'nm', 4],[263.0, 10, 'nm', 4],[108.0, 0, 'and', 2],[64.0, 30, 'K', 1]

Bi2Se3
###Magnetoresistance and gating effects in ultrathin NbN-$\rm Bi_2Se_3$ bilayers|Gad Koren###
(1454016, 1454019)
 The results arediscussed in terms of vortex physics, and the origin of the different MR peaksis identified and attributed to flux-flow MR in the isolated NbN islands andthe different proximity regions in the rm Bi2Se3 cap-layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[309.0, 3, 'nm', 4],[285.0, 10, 'nm', 4],[130.0, 0, 'and', 2],[86.0, 30, 'K', 1]

ZrSiS
###Dirac Cone Protected by Non-Symmorphic Symmetry and 3D Dirac Line Node in ZrSiS|Leslie M. Schoop,Mazhar N. Ali,Carola Straßer,Viola Duppel,Stuart S. P. Parkin,Bettina V. Lotsch,Christian R. Ast###
(1454139, 1454141)
Dirac Cone Protected by Non-Symmorphic Symmetry and 3D Dirac Line Node in ZrSiS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 3, 'D', 0],[171.0, 115.036806, ',', 4],[347.0, 2, 'D', 6],[393.0, 2, 'D', 6],[434.0, 2, ',', 7]

ZrSiS
###Dirac Cone Protected by Non-Symmorphic Symmetry and 3D Dirac Line Node in ZrSiS|Leslie M. Schoop,Mazhar N. Ali,Carola Straßer,Viola Duppel,Stuart S. P. Parkin,Bettina V. Lotsch,Christian R. Ast###
(1454380, 1454382)
Here, we show with angle resolved photoemission studies supported by textitabinitio calculations that the highly stable, non-toxic and earth-abundantmaterial, ZrSiS, has an electronic band structure that hosts several Diraccones which form a Fermi surface with a diamond-shaped line of Dirac nodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[251.0, 3, 'D', 5],[68.0, 115.036806, ',', 1],[106.0, 2, 'D', 1],[152.0, 2, 'D', 1],[193.0, 2, ',', 2]

Si
###Dirac Cone Protected by Non-Symmorphic Symmetry and 3D Dirac Line Node in ZrSiS|Leslie M. Schoop,Mazhar N. Ali,Carola Straßer,Viola Duppel,Stuart S. P. Parkin,Bettina V. Lotsch,Christian R. Ast###
(1454458, 1454458)
 Wealso experimentally show, for the first time, that the square Si lattice inZrSiS is an excellent template for realizing the new types of 2D Dirac conesrecently predicted by Young and Kane citeyoung2015dirac and image anunforseen surface state that arises close to the 2D Dirac cone.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[329.0, 3, 'D', 6],[146.0, 115.036806, ',', 2],[30.0, 2, 'D', 0],[76.0, 2, 'D', 0],[117.0, 2, ',', 1]

ZrSiS
###Dirac Cone Protected by Non-Symmorphic Symmetry and 3D Dirac Line Node in ZrSiS|Leslie M. Schoop,Mazhar N. Ali,Carola Straßer,Viola Duppel,Stuart S. P. Parkin,Bettina V. Lotsch,Christian R. Ast###
(1454465, 1454467)
 Wealso experimentally show, for the first time, that the square Si lattice inZrSiS is an excellent template for realizing the new types of 2D Dirac conesrecently predicted by Young and Kane citeyoung2015dirac and image anunforseen surface state that arises close to the 2D Dirac cone.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[336.0, 3, 'D', 6],[153.0, 115.036806, ',', 2],[21.0, 2, 'D', 0],[67.0, 2, 'D', 0],[108.0, 2, ',', 1]

V
###Dirac Cone Protected by Non-Symmorphic Symmetry and 3D Dirac Line Node in ZrSiS|Leslie M. Schoop,Mazhar N. Ali,Carola Straßer,Viola Duppel,Stuart S. P. Parkin,Bettina V. Lotsch,Christian R. Ast###
(1454578, 1454578)
 Finally, wefind that the energy range of the linearly dispersed bands is as high as 2,e<missing VAR>Vabove and below the Fermi level; much larger than of any known Dirac materialso far.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[449.0, 3, 'D', 7],[266.0, 115.036806, ',', 3],[90.0, 2, 'D', 1],[44.0, 2, 'D', 1],[3.0, 2, ',', 0]

ZrSiS
###Dirac Cone Protected by Non-Symmorphic Symmetry and 3D Dirac Line Node in ZrSiS|Leslie M. Schoop,Mazhar N. Ali,Carola Straßer,Viola Duppel,Stuart S. P. Parkin,Bettina V. Lotsch,Christian R. Ast###
(1454620, 1454622)
 This makes ZrSiS a very promising candidate to study the exoticbehavior of Dirac electrons, or Weyl fermions if a magnetic field is applied,as well as the properties of lines of Dirac nodes<missing PERIOD>
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[491.0, 3, 'D', 8],[308.0, 115.036806, ',', 4],[132.0, 2, 'D', 2],[86.0, 2, 'D', 2],[45.0, 2, ',', 1]

La2
###Investigation of ferromagnetic domain behavior and phase transition at nanoscale in bilayer manganites|C. Phatak,A. K. Petford-Long,H. Zheng,J. F. Mitchell,S. Rosenkranz,M. R. Norman###
(1454844, 1454845)
 Here weconsider a more macroscopic view of manganite materials physics, reporting onthe ferromagnetic domain behavior in a bilayer manganite sample with a nominalcomposition of La2-2x<missing VAR>Sr12x<missing VAR>Mn2O7 with x<missing VAR>0.38, studied usingin-situ Lorentz transmission electron microscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 0.38, ',', 0]

Sr12
###Investigation of ferromagnetic domain behavior and phase transition at nanoscale in bilayer manganites|C. Phatak,A. K. Petford-Long,H. Zheng,J. F. Mitchell,S. Rosenkranz,M. R. Norman###
(1454849, 1454851)
 Here weconsider a more macroscopic view of manganite materials physics, reporting onthe ferromagnetic domain behavior in a bilayer manganite sample with a nominalcomposition of La2-2x<missing VAR>Sr12x<missing VAR>Mn2O7 with x<missing VAR>0.38, studied usingin-situ Lorentz transmission electron microscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 0.38, ',', 0]

Mn2O7
###Investigation of ferromagnetic domain behavior and phase transition at nanoscale in bilayer manganites|C. Phatak,A. K. Petford-Long,H. Zheng,J. F. Mitchell,S. Rosenkranz,M. R. Norman###
(1454853, 1454856)
 Here weconsider a more macroscopic view of manganite materials physics, reporting onthe ferromagnetic domain behavior in a bilayer manganite sample with a nominalcomposition of La2-2x<missing VAR>Sr12x<missing VAR>Mn2O7 with x<missing VAR>0.38, studied usingin-situ Lorentz transmission electron microscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0.7777777777777778,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 0.38, ',', 0]

In
###Linear magnetoconductivity in an intrinsic topological Weyl semimetal|Song-Bo Zhang,Hai-Zhou Lu,Shun-Qing Shen###
(1455298, 1455298)
 In the semimetalphase, the Fermi energy crosses only the 0th Landau bands in magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 0, 'th', 0]

SrRu1-x
###Electronic and magnetic transitions in perovskite SrRu1-xIrxO3 thin films|Abhijit Biswas,Yong Woo Lee,Yoon Hee Jeong###
(1455521, 1455525)
Electronic and magnetic transitions in perovskite SrRu1-xIrxO3 thin films.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[98.0, 150, 'K', 2],[160.0, 0.25, 'underwent', 4],[174.0, 75, 'K', 4],[188.0, 45, 'K', 4],[313.0, 0.25, ';', 6],[375.0, 4, 'd', 7],[378.0, 5, 'd', 7]

O3
###Electronic and magnetic transitions in perovskite SrRu1-xIrxO3 thin films|Abhijit Biswas,Yong Woo Lee,Yoon Hee Jeong###
(1455527, 1455528)
Electronic and magnetic transitions in perovskite SrRu1-xIrxO3 thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 150, 'K', 2],[157.0, 0.25, 'underwent', 4],[171.0, 75, 'K', 4],[185.0, 45, 'K', 4],[310.0, 0.25, ';', 6],[372.0, 4, 'd', 7],[375.0, 5, 'd', 7]

SrRu1-x
###Electronic and magnetic transitions in perovskite SrRu1-xIrxO3 thin films|Abhijit Biswas,Yong Woo Lee,Yoon Hee Jeong###
(1455556, 1455560)
 We have investigated the electronic and magnetic properties of perovskiteSrRu1-xIrxO3 thin films grown by pulsed laser deposition on atomically-flat(001) SrTiO3 substrates.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[63.0, 150, 'K', 1],[125.0, 0.25, 'underwent', 3],[139.0, 75, 'K', 3],[153.0, 45, 'K', 3],[278.0, 0.25, ';', 5],[340.0, 4, 'd', 6],[343.0, 5, 'd', 6]

O3
###Electronic and magnetic transitions in perovskite SrRu1-xIrxO3 thin films|Abhijit Biswas,Yong Woo Lee,Yoon Hee Jeong###
(1455562, 1455563)
 We have investigated the electronic and magnetic properties of perovskiteSrRu1-xIrxO3 thin films grown by pulsed laser deposition on atomically-flat(001) SrTiO3 substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 150, 'K', 1],[122.0, 0.25, 'underwent', 3],[136.0, 75, 'K', 3],[150.0, 45, 'K', 3],[275.0, 0.25, ';', 5],[337.0, 4, 'd', 6],[340.0, 5, 'd', 6]

SrTiO3
###Electronic and magnetic transitions in perovskite SrRu1-xIrxO3 thin films|Abhijit Biswas,Yong Woo Lee,Yoon Hee Jeong###
(1455590, 1455593)
 We have investigated the electronic and magnetic properties of perovskiteSrRu1-xIrxO3 thin films grown by pulsed laser deposition on atomically-flat(001) SrTiO3 substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 150, 'K', 1],[92.0, 0.25, 'underwent', 3],[106.0, 75, 'K', 3],[120.0, 45, 'K', 3],[245.0, 0.25, ';', 5],[307.0, 4, 'd', 6],[310.0, 5, 'd', 6]

SrRuO3
###Electronic and magnetic transitions in perovskite SrRu1-xIrxO3 thin films|Abhijit Biswas,Yong Woo Lee,Yoon Hee Jeong###
(1455598, 1455601)
 SrRuO3 has the properties of a ferromagnetic metalwith Curie temperature 150 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 150, 'K', 0],[84.0, 0.25, 'underwent', 2],[98.0, 75, 'K', 2],[112.0, 45, 'K', 2],[237.0, 0.25, ';', 4],[299.0, 4, 'd', 5],[302.0, 5, 'd', 5]

Ir
###Electronic and magnetic transitions in perovskite SrRu1-xIrxO3 thin films|Abhijit Biswas,Yong Woo Lee,Yoon Hee Jeong###
(1455628, 1455628)
 Substituting Ir for Ru in SrRuO3, films showedfully-metallic behavior and ferromagnetic ordering, although resistivityincreased and the ferromagnetic T<missing VAR>C decreased.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 150, 'K', 1],[57.0, 0.25, 'underwent', 1],[71.0, 75, 'K', 1],[85.0, 45, 'K', 1],[210.0, 0.25, ';', 3],[272.0, 4, 'd', 4],[275.0, 5, 'd', 4]

Ru
###Electronic and magnetic transitions in perovskite SrRu1-xIrxO3 thin films|Abhijit Biswas,Yong Woo Lee,Yoon Hee Jeong###
(1455632, 1455632)
 Substituting Ir for Ru in SrRuO3, films showedfully-metallic behavior and ferromagnetic ordering, although resistivityincreased and the ferromagnetic T<missing VAR>C decreased.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 150, 'K', 1],[53.0, 0.25, 'underwent', 1],[67.0, 75, 'K', 1],[81.0, 45, 'K', 1],[206.0, 0.25, ';', 3],[268.0, 4, 'd', 4],[271.0, 5, 'd', 4]

SrRuO3
###Electronic and magnetic transitions in perovskite SrRu1-xIrxO3 thin films|Abhijit Biswas,Yong Woo Lee,Yoon Hee Jeong###
(1455636, 1455639)
 Substituting Ir for Ru in SrRuO3, films showedfully-metallic behavior and ferromagnetic ordering, although resistivityincreased and the ferromagnetic T<missing VAR>C decreased.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 150, 'K', 1],[46.0, 0.25, 'underwent', 1],[60.0, 75, 'K', 1],[74.0, 45, 'K', 1],[199.0, 0.25, ';', 3],[261.0, 4, 'd', 4],[264.0, 5, 'd', 4]

C
###Electronic and magnetic transitions in perovskite SrRu1-xIrxO3 thin films|Abhijit Biswas,Yong Woo Lee,Yoon Hee Jeong###
(1455674, 1455674)
 Substituting Ir for Ru in SrRuO3, films showedfully-metallic behavior and ferromagnetic ordering, although resistivityincreased and the ferromagnetic T<missing VAR>C decreased.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 150, 'K', 1],[11.0, 0.25, 'underwent', 1],[25.0, 75, 'K', 1],[39.0, 45, 'K', 1],[164.0, 0.25, ';', 3],[226.0, 4, 'd', 4],[229.0, 5, 'd', 4]

In
###Electronic and magnetic transitions in perovskite SrRu1-xIrxO3 thin films|Abhijit Biswas,Yong Woo Lee,Yoon Hee Jeong###
(1455752, 1455752)
 In ferromagnetic films,resistivity increased near-linearly with T<missing VAR>, but in paramagnetic film (x<missing VAR>  0.25)resistivity increased as T<missing VAR>3/2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 150, 'K', 3],[67.0, 0.25, 'underwent', 1],[53.0, 75, 'K', 1],[39.0, 45, 'K', 1],[86.0, 0.25, ';', 1],[148.0, 4, 'd', 2],[151.0, 5, 'd', 2]

SrIr0.5Ru0.5O3
###Metal insulator transition and magnetotransport anomalies in perovskite SrIr0.5Ru0.5O3 thin films|Abhijit Biswas,Yong Woo Lee,Sang Woo Kim,Yoon Hee Jeong###
(1455934, 1455940)
Metal insulator transition and magnetotransport anomalies in perovskite SrIr0.5Ru0.5O3 thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[172.0, 80, 'K', 2],[181.0, 90, 'K', 2],[203.0, 100, 'K', 2],[306.0, 25, 'K', 4],[316.0, 25, 'K', 4]

SrIr0.5Ru0.5O3
###Metal insulator transition and magnetotransport anomalies in perovskite SrIr0.5Ru0.5O3 thin films|Abhijit Biswas,Yong Woo Lee,Sang Woo Kim,Yoon Hee Jeong###
(1455968, 1455974)
 We investigated the nature of transport and magnetic properties inSrIr0.5Ru0.5O3, (SIR<missing VAR>O) which has characteristics intermediate between acorrelated non-Fermi liquid state and an itinerant Fermi liquid state, bygrowing perovskite thin films on various substrates (SrTiO3 (001),(LaAlO3)0.3(Sr2TaAlO6)0.7 (001) and LaAlO3 (001)).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 80, 'K', 1],[147.0, 90, 'K', 1],[169.0, 100, 'K', 1],[272.0, 25, 'K', 3],[282.0, 25, 'K', 3]

SI
###Metal insulator transition and magnetotransport anomalies in perovskite SrIr0.5Ru0.5O3 thin films|Abhijit Biswas,Yong Woo Lee,Sang Woo Kim,Yoon Hee Jeong###
(1455978, 1455979)
 We investigated the nature of transport and magnetic properties inSrIr0.5Ru0.5O3, (SIR<missing VAR>O) which has characteristics intermediate between acorrelated non-Fermi liquid state and an itinerant Fermi liquid state, bygrowing perovskite thin films on various substrates (SrTiO3 (001),(LaAlO3)0.3(Sr2TaAlO6)0.7 (001) and LaAlO3 (001)).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 80, 'K', 1],[142.0, 90, 'K', 1],[164.0, 100, 'K', 1],[267.0, 25, 'K', 3],[277.0, 25, 'K', 3]

O
###Metal insulator transition and magnetotransport anomalies in perovskite SrIr0.5Ru0.5O3 thin films|Abhijit Biswas,Yong Woo Lee,Sang Woo Kim,Yoon Hee Jeong###
(1455981, 1455981)
 We investigated the nature of transport and magnetic properties inSrIr0.5Ru0.5O3, (SIR<missing VAR>O) which has characteristics intermediate between acorrelated non-Fermi liquid state and an itinerant Fermi liquid state, bygrowing perovskite thin films on various substrates (SrTiO3 (001),(LaAlO3)0.3(Sr2TaAlO6)0.7 (001) and LaAlO3 (001)).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 80, 'K', 1],[140.0, 90, 'K', 1],[162.0, 100, 'K', 1],[265.0, 25, 'K', 3],[275.0, 25, 'K', 3]

SrTiO3
###Metal insulator transition and magnetotransport anomalies in perovskite SrIr0.5Ru0.5O3 thin films|Abhijit Biswas,Yong Woo Lee,Sang Woo Kim,Yoon Hee Jeong###
(1456038, 1456041)
 We investigated the nature of transport and magnetic properties inSrIr0.5Ru0.5O3, (SIR<missing VAR>O) which has characteristics intermediate between acorrelated non-Fermi liquid state and an itinerant Fermi liquid state, bygrowing perovskite thin films on various substrates (SrTiO3 (001),(LaAlO3)0.3(Sr2TaAlO6)0.7 (001) and LaAlO3 (001)).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 80, 'K', 1],[80.0, 90, 'K', 1],[102.0, 100, 'K', 1],[205.0, 25, 'K', 3],[215.0, 25, 'K', 3]

(LaAlO3)0.3
###Metal insulator transition and magnetotransport anomalies in perovskite SrIr0.5Ru0.5O3 thin films|Abhijit Biswas,Yong Woo Lee,Sang Woo Kim,Yoon Hee Jeong###
(1456049, 1456055)
 We investigated the nature of transport and magnetic properties inSrIr0.5Ru0.5O3, (SIR<missing VAR>O) which has characteristics intermediate between acorrelated non-Fermi liquid state and an itinerant Fermi liquid state, bygrowing perovskite thin films on various substrates (SrTiO3 (001),(LaAlO3)0.3(Sr2TaAlO6)0.7 (001) and LaAlO3 (001)).
Featurization successful!
0,0,0,0,0,0,0,0.6,0,0,0,0,0.19999999999999998,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.19999999999999998,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 80, 'K', 1],[66.0, 90, 'K', 1],[88.0, 100, 'K', 1],[191.0, 25, 'K', 3],[201.0, 25, 'K', 3]

(Sr2TaAlO6)0.7
###Metal insulator transition and magnetotransport anomalies in perovskite SrIr0.5Ru0.5O3 thin films|Abhijit Biswas,Yong Woo Lee,Sang Woo Kim,Yoon Hee Jeong###
(1456056, 1456064)
 We investigated the nature of transport and magnetic properties inSrIr0.5Ru0.5O3, (SIR<missing VAR>O) which has characteristics intermediate between acorrelated non-Fermi liquid state and an itinerant Fermi liquid state, bygrowing perovskite thin films on various substrates (SrTiO3 (001),(LaAlO3)0.3(Sr2TaAlO6)0.7 (001) and LaAlO3 (001)).
Featurization successful!
0,0,0,0,0,0,0,0.6,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 80, 'K', 1],[57.0, 90, 'K', 1],[79.0, 100, 'K', 1],[182.0, 25, 'K', 3],[192.0, 25, 'K', 3]

LaAlO3
###Metal insulator transition and magnetotransport anomalies in perovskite SrIr0.5Ru0.5O3 thin films|Abhijit Biswas,Yong Woo Lee,Sang Woo Kim,Yoon Hee Jeong###
(1456072, 1456075)
 We investigated the nature of transport and magnetic properties inSrIr0.5Ru0.5O3, (SIR<missing VAR>O) which has characteristics intermediate between acorrelated non-Fermi liquid state and an itinerant Fermi liquid state, bygrowing perovskite thin films on various substrates (SrTiO3 (001),(LaAlO3)0.3(Sr2TaAlO6)0.7 (001) and LaAlO3 (001)).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 80, 'K', 1],[46.0, 90, 'K', 1],[68.0, 100, 'K', 1],[171.0, 25, 'K', 3],[181.0, 25, 'K', 3]

SrTiO3
###Metal insulator transition and magnetotransport anomalies in perovskite SrIr0.5Ru0.5O3 thin films|Abhijit Biswas,Yong Woo Lee,Sang Woo Kim,Yoon Hee Jeong###
(1456116, 1456119)
 We observed systematicvariation of underlying substrate dependent metal-to-insulator transitiontemperatures at 80 K on SrTiO3, 90 K on (LaAlO3)0.3(Sr2TaAlO6)0.7 and 100 K onLaAlO3) in resistivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 80, 'K', 0],[2.0, 90, 'K', 0],[24.0, 100, 'K', 0],[127.0, 25, 'K', 2],[137.0, 25, 'K', 2]

(LaAlO3)0.3
###Metal insulator transition and magnetotransport anomalies in perovskite SrIr0.5Ru0.5O3 thin films|Abhijit Biswas,Yong Woo Lee,Sang Woo Kim,Yoon Hee Jeong###
(1456125, 1456131)
 We observed systematicvariation of underlying substrate dependent metal-to-insulator transitiontemperatures at 80 K on SrTiO3, 90 K on (LaAlO3)0.3(Sr2TaAlO6)0.7 and 100 K onLaAlO3) in resistivity.
Featurization successful!
0,0,0,0,0,0,0,0.6,0,0,0,0,0.19999999999999998,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.19999999999999998,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 80, 'K', 0],[4.0, 90, 'K', 0],[12.0, 100, 'K', 0],[115.0, 25, 'K', 2],[125.0, 25, 'K', 2]

(Sr2TaAlO6)0.7
###Metal insulator transition and magnetotransport anomalies in perovskite SrIr0.5Ru0.5O3 thin films|Abhijit Biswas,Yong Woo Lee,Sang Woo Kim,Yoon Hee Jeong###
(1456132, 1456140)
 We observed systematicvariation of underlying substrate dependent metal-to-insulator transitiontemperatures at 80 K on SrTiO3, 90 K on (LaAlO3)0.3(Sr2TaAlO6)0.7 and 100 K onLaAlO3) in resistivity.
Featurization successful!
0,0,0,0,0,0,0,0.6,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 80, 'K', 0],[11.0, 90, 'K', 0],[3.0, 100, 'K', 0],[106.0, 25, 'K', 2],[116.0, 25, 'K', 2]

O3
###Metal insulator transition and magnetotransport anomalies in perovskite SrIr0.5Ru0.5O3 thin films|Abhijit Biswas,Yong Woo Lee,Sang Woo Kim,Yoon Hee Jeong###
(1456150, 1456151)
 We observed systematicvariation of underlying substrate dependent metal-to-insulator transitiontemperatures at 80 K on SrTiO3, 90 K on (LaAlO3)0.3(Sr2TaAlO6)0.7 and 100 K onLaAlO3) in resistivity.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 80, 'K', 0],[29.0, 90, 'K', 0],[7.0, 100, 'K', 0],[95.0, 25, 'K', 2],[105.0, 25, 'K', 2]

SI
###Metal insulator transition and magnetotransport anomalies in perovskite SrIr0.5Ru0.5O3 thin films|Abhijit Biswas,Yong Woo Lee,Sang Woo Kim,Yoon Hee Jeong###
(1456221, 1456222)
Magnetoresistance (MR) measurement of SIR<missing VAR>O on SrTiO3 (001) shows negative MRupto 25 K and positive MR above 25 K, with negative MR proportional to B1/2 andpositive MR proportional to B2; consistent with the localized-to-normaltransport crossover dynamics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 80, 'K', 2],[100.0, 90, 'K', 2],[78.0, 100, 'K', 2],[24.0, 25, 'K', 0],[34.0, 25, 'K', 0]

O
###Metal insulator transition and magnetotransport anomalies in perovskite SrIr0.5Ru0.5O3 thin films|Abhijit Biswas,Yong Woo Lee,Sang Woo Kim,Yoon Hee Jeong###
(1456224, 1456224)
Magnetoresistance (MR) measurement of SIR<missing VAR>O on SrTiO3 (001) shows negative MRupto 25 K and positive MR above 25 K, with negative MR proportional to B1/2 andpositive MR proportional to B2; consistent with the localized-to-normaltransport crossover dynamics.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 80, 'K', 2],[103.0, 90, 'K', 2],[81.0, 100, 'K', 2],[22.0, 25, 'K', 0],[32.0, 25, 'K', 0]

SrTiO3
###Metal insulator transition and magnetotransport anomalies in perovskite SrIr0.5Ru0.5O3 thin films|Abhijit Biswas,Yong Woo Lee,Sang Woo Kim,Yoon Hee Jeong###
(1456228, 1456231)
Magnetoresistance (MR) measurement of SIR<missing VAR>O on SrTiO3 (001) shows negative MRupto 25 K and positive MR above 25 K, with negative MR proportional to B1/2 andpositive MR proportional to B2; consistent with the localized-to-normaltransport crossover dynamics.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 80, 'K', 2],[107.0, 90, 'K', 2],[85.0, 100, 'K', 2],[15.0, 25, 'K', 0],[25.0, 25, 'K', 0]

B1
###Metal insulator transition and magnetotransport anomalies in perovskite SrIr0.5Ru0.5O3 thin films|Abhijit Biswas,Yong Woo Lee,Sang Woo Kim,Yoon Hee Jeong###
(1456270, 1456271)
Magnetoresistance (MR) measurement of SIR<missing VAR>O on SrTiO3 (001) shows negative MRupto 25 K and positive MR above 25 K, with negative MR proportional to B1/2 andpositive MR proportional to B2; consistent with the localized-to-normaltransport crossover dynamics.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 80, 'K', 2],[149.0, 90, 'K', 2],[127.0, 100, 'K', 2],[24.0, 25, 'K', 0],[14.0, 25, 'K', 0]

B2
###Metal insulator transition and magnetotransport anomalies in perovskite SrIr0.5Ru0.5O3 thin films|Abhijit Biswas,Yong Woo Lee,Sang Woo Kim,Yoon Hee Jeong###
(1456287, 1456288)
Magnetoresistance (MR) measurement of SIR<missing VAR>O on SrTiO3 (001) shows negative MRupto 25 K and positive MR above 25 K, with negative MR proportional to B1/2 andpositive MR proportional to B2; consistent with the localized-to-normaltransport crossover dynamics.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 80, 'K', 2],[166.0, 90, 'K', 2],[144.0, 100, 'K', 2],[41.0, 25, 'K', 0],[31.0, 25, 'K', 0]

SI
###Metal insulator transition and magnetotransport anomalies in perovskite SrIr0.5Ru0.5O3 thin films|Abhijit Biswas,Yong Woo Lee,Sang Woo Kim,Yoon Hee Jeong###
(1456327, 1456328)
 Furthermore, observed spin glass like behavior ofSIR<missing VAR>O on SrTiO3 (001) in the localized regime, validates the hypothesis that(Anderson) localization favors glassy ordering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[215.0, 80, 'K', 3],[206.0, 90, 'K', 3],[184.0, 100, 'K', 3],[81.0, 25, 'K', 1],[71.0, 25, 'K', 1]

O
###Metal insulator transition and magnetotransport anomalies in perovskite SrIr0.5Ru0.5O3 thin films|Abhijit Biswas,Yong Woo Lee,Sang Woo Kim,Yoon Hee Jeong###
(1456330, 1456330)
 Furthermore, observed spin glass like behavior ofSIR<missing VAR>O on SrTiO3 (001) in the localized regime, validates the hypothesis that(Anderson) localization favors glassy ordering.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[218.0, 80, 'K', 3],[209.0, 90, 'K', 3],[187.0, 100, 'K', 3],[84.0, 25, 'K', 1],[74.0, 25, 'K', 1]

SrTiO3
###Metal insulator transition and magnetotransport anomalies in perovskite SrIr0.5Ru0.5O3 thin films|Abhijit Biswas,Yong Woo Lee,Sang Woo Kim,Yoon Hee Jeong###
(1456334, 1456337)
 Furthermore, observed spin glass like behavior ofSIR<missing VAR>O on SrTiO3 (001) in the localized regime, validates the hypothesis that(Anderson) localization favors glassy ordering.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[222.0, 80, 'K', 3],[213.0, 90, 'K', 3],[191.0, 100, 'K', 3],[88.0, 25, 'K', 1],[78.0, 25, 'K', 1]

Bi2Te3/Fe1
###Merging Dirac electrons and correlation effect in the heterostructured Bi2Te3/Fe1+dTe|Guan Du,Zengyi Du,Xiong Yang,Enyu Wang,Delong Fang,Huan Yang,Hai-Hu Wen###
(1456439, 1456445)
Merging Dirac electrons and correlation effect in the heterostructured Bi2Te3/Fe1d<missing VAR>Te.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[300.0, 6, 'quintuple', 6]

Te
###Merging Dirac electrons and correlation effect in the heterostructured Bi2Te3/Fe1+dTe|Guan Du,Zengyi Du,Xiong Yang,Enyu Wang,Delong Fang,Huan Yang,Hai-Hu Wen###
(1456447, 1456447)
Merging Dirac electrons and correlation effect in the heterostructured Bi2Te3/Fe1d<missing VAR>Te.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[298.0, 6, 'quintuple', 6]

Bi2Te3/Fe1
###Merging Dirac electrons and correlation effect in the heterostructured Bi2Te3/Fe1+dTe|Guan Du,Zengyi Du,Xiong Yang,Enyu Wang,Delong Fang,Huan Yang,Hai-Hu Wen###
(1456696, 1456702)
 Here we report the discovery ofmerging the two important components Dirac electrons and the correlationeffect in heterostructured Bi2Te3/Fe1d<missing VAR>Te.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[43.0, 6, 'quintuple', 1]

Te
###Merging Dirac electrons and correlation effect in the heterostructured Bi2Te3/Fe1+dTe|Guan Du,Zengyi Du,Xiong Yang,Enyu Wang,Delong Fang,Huan Yang,Hai-Hu Wen###
(1456704, 1456704)
 Here we report the discovery ofmerging the two important components Dirac electrons and the correlationeffect in heterostructured Bi2Te3/Fe1d<missing VAR>Te.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 6, 'quintuple', 1]

Bi2Te3
###Merging Dirac electrons and correlation effect in the heterostructured Bi2Te3/Fe1+dTe|Guan Du,Zengyi Du,Xiong Yang,Enyu Wang,Delong Fang,Huan Yang,Hai-Hu Wen###
(1456722, 1456725)
 By measuring the scanning tunnelingspectroscopy on Bi2Te3 thin films (a typical topological insulator) thickerthan 6 quintuple layers on top of the Fe1d<missing VAR>Te single crystal (a parent phase ofthe iron based superconductors FeSe1-xTex), we observed the quantum oscillationof Landau levels of the Dirac electrons and the gapped feature at the Fermienergy due to the correlation effect of Fe1d<missing VAR>Te.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 6, 'quintuple', 0]

Fe1
###Merging Dirac electrons and correlation effect in the heterostructured Bi2Te3/Fe1+dTe|Guan Du,Zengyi Du,Xiong Yang,Enyu Wang,Delong Fang,Huan Yang,Hai-Hu Wen###
(1456757, 1456758)
 By measuring the scanning tunnelingspectroscopy on Bi2Te3 thin films (a typical topological insulator) thickerthan 6 quintuple layers on top of the Fe1d<missing VAR>Te single crystal (a parent phase ofthe iron based superconductors FeSe1-xTex), we observed the quantum oscillationof Landau levels of the Dirac electrons and the gapped feature at the Fermienergy due to the correlation effect of Fe1d<missing VAR>Te.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 6, 'quintuple', 0]

Te
###Merging Dirac electrons and correlation effect in the heterostructured Bi2Te3/Fe1+dTe|Guan Du,Zengyi Du,Xiong Yang,Enyu Wang,Delong Fang,Huan Yang,Hai-Hu Wen###
(1456760, 1456760)
 By measuring the scanning tunnelingspectroscopy on Bi2Te3 thin films (a typical topological insulator) thickerthan 6 quintuple layers on top of the Fe1d<missing VAR>Te single crystal (a parent phase ofthe iron based superconductors FeSe1-xTex), we observed the quantum oscillationof Landau levels of the Dirac electrons and the gapped feature at the Fermienergy due to the correlation effect of Fe1d<missing VAR>Te.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 6, 'quintuple', 0]

FeSe1-x
###Merging Dirac electrons and correlation effect in the heterostructured Bi2Te3/Fe1+dTe|Guan Du,Zengyi Du,Xiong Yang,Enyu Wang,Delong Fang,Huan Yang,Hai-Hu Wen###
(1456784, 1456788)
 By measuring the scanning tunnelingspectroscopy on Bi2Te3 thin films (a typical topological insulator) thickerthan 6 quintuple layers on top of the Fe1d<missing VAR>Te single crystal (a parent phase ofthe iron based superconductors FeSe1-xTex), we observed the quantum oscillationof Landau levels of the Dirac electrons and the gapped feature at the Fermienergy due to the correlation effect of Fe1d<missing VAR>Te.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[39.0, 6, 'quintuple', 0]

Fe1
###Merging Dirac electrons and correlation effect in the heterostructured Bi2Te3/Fe1+dTe|Guan Du,Zengyi Du,Xiong Yang,Enyu Wang,Delong Fang,Huan Yang,Hai-Hu Wen###
(1456847, 1456848)
 By measuring the scanning tunnelingspectroscopy on Bi2Te3 thin films (a typical topological insulator) thickerthan 6 quintuple layers on top of the Fe1d<missing VAR>Te single crystal (a parent phase ofthe iron based superconductors FeSe1-xTex), we observed the quantum oscillationof Landau levels of the Dirac electrons and the gapped feature at the Fermienergy due to the correlation effect of Fe1d<missing VAR>Te.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 6, 'quintuple', 0]

Te
###Merging Dirac electrons and correlation effect in the heterostructured Bi2Te3/Fe1+dTe|Guan Du,Zengyi Du,Xiong Yang,Enyu Wang,Delong Fang,Huan Yang,Hai-Hu Wen###
(1456850, 1456850)
 By measuring the scanning tunnelingspectroscopy on Bi2Te3 thin films (a typical topological insulator) thickerthan 6 quintuple layers on top of the Fe1d<missing VAR>Te single crystal (a parent phase ofthe iron based superconductors FeSe1-xTex), we observed the quantum oscillationof Landau levels of the Dirac electrons and the gapped feature at the Fermienergy due to the correlation effect of Fe1d<missing VAR>Te.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 6, 'quintuple', 0]

Cd3As2
###Two-Carrier Transport Induced Hall Anomaly and Large Tunable Magnetoresistance in Dirac Semimetal Cd3As2 Nanoplates|Cai-Zhen Li,Jin-Guang Li,Li-Xian Wang,Liang Zhang,Jing-Min Zhang,Dapeng Yu,Zhi-Min Liao###
(1456935, 1456938)
Two-Carrier Transport Induced Hall Anomaly and Large Tunable Magnetoresistance in Dirac Semimetal Cd3As2 Nanoplates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[278.0, 2000, '%', 7]

Cd3As2
###Two-Carrier Transport Induced Hall Anomaly and Large Tunable Magnetoresistance in Dirac Semimetal Cd3As2 Nanoplates|Cai-Zhen Li,Jin-Guang Li,Li-Xian Wang,Liang Zhang,Jing-Min Zhang,Dapeng Yu,Zhi-Min Liao###
(1456943, 1456946)
 Cd3As2 is a model material of Dirac semimetal with a linear dispersionrelation along all three directions in the momentum space.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[270.0, 2000, '%', 6]

Cd3As2
###Two-Carrier Transport Induced Hall Anomaly and Large Tunable Magnetoresistance in Dirac Semimetal Cd3As2 Nanoplates|Cai-Zhen Li,Jin-Guang Li,Li-Xian Wang,Liang Zhang,Jing-Min Zhang,Dapeng Yu,Zhi-Min Liao###
(1457001, 1457004)
 The unique bandstructure of Cd3As2 makes it with both Dirac and topological properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[212.0, 2000, '%', 5]

Cd3As2
###Two-Carrier Transport Induced Hall Anomaly and Large Tunable Magnetoresistance in Dirac Semimetal Cd3As2 Nanoplates|Cai-Zhen Li,Jin-Guang Li,Li-Xian Wang,Liang Zhang,Jing-Min Zhang,Dapeng Yu,Zhi-Min Liao###
(1457095, 1457098)
 Here we report the temperatureand gate voltage dependent magnetotransport properties of Cd3As2 nanoplateswith Fermi level near the Dirac point.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 2000, '%', 3]

Na3Bi
###Two-Carrier Transport Induced Hall Anomaly and Large Tunable Magnetoresistance in Dirac Semimetal Cd3As2 Nanoplates|Cai-Zhen Li,Jin-Guang Li,Li-Xian Wang,Liang Zhang,Jing-Min Zhang,Dapeng Yu,Zhi-Min Liao###
(1457296, 1457298)
 Our results are valuable for understanding the experimentalobservations related to the two-carrier transport in Dirac/Weyl semimetals,such as Na3Bi, ZrTe5, TaAs, NbAs, and HfTe5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 2000, '%', 1]

ZrTe5
###Two-Carrier Transport Induced Hall Anomaly and Large Tunable Magnetoresistance in Dirac Semimetal Cd3As2 Nanoplates|Cai-Zhen Li,Jin-Guang Li,Li-Xian Wang,Liang Zhang,Jing-Min Zhang,Dapeng Yu,Zhi-Min Liao###
(1457301, 1457303)
 Our results are valuable for understanding the experimentalobservations related to the two-carrier transport in Dirac/Weyl semimetals,such as Na3Bi, ZrTe5, TaAs, NbAs, and HfTe5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 2000, '%', 1]

TaAs
###Two-Carrier Transport Induced Hall Anomaly and Large Tunable Magnetoresistance in Dirac Semimetal Cd3As2 Nanoplates|Cai-Zhen Li,Jin-Guang Li,Li-Xian Wang,Liang Zhang,Jing-Min Zhang,Dapeng Yu,Zhi-Min Liao###
(1457306, 1457307)
 Our results are valuable for understanding the experimentalobservations related to the two-carrier transport in Dirac/Weyl semimetals,such as Na3Bi, ZrTe5, TaAs, NbAs, and HfTe5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 2000, '%', 1]

NbAs
###Two-Carrier Transport Induced Hall Anomaly and Large Tunable Magnetoresistance in Dirac Semimetal Cd3As2 Nanoplates|Cai-Zhen Li,Jin-Guang Li,Li-Xian Wang,Liang Zhang,Jing-Min Zhang,Dapeng Yu,Zhi-Min Liao###
(1457310, 1457311)
 Our results are valuable for understanding the experimentalobservations related to the two-carrier transport in Dirac/Weyl semimetals,such as Na3Bi, ZrTe5, TaAs, NbAs, and HfTe5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 2000, '%', 1]

HfTe5
###Two-Carrier Transport Induced Hall Anomaly and Large Tunable Magnetoresistance in Dirac Semimetal Cd3As2 Nanoplates|Cai-Zhen Li,Jin-Guang Li,Li-Xian Wang,Liang Zhang,Jing-Min Zhang,Dapeng Yu,Zhi-Min Liao###
(1457316, 1457318)
 Our results are valuable for understanding the experimentalobservations related to the two-carrier transport in Dirac/Weyl semimetals,such as Na3Bi, ZrTe5, TaAs, NbAs, and HfTe5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8333333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 2000, '%', 1]

AgAl3
###Ferromagnetism in orthorhombic RAgAl3 (R = Ce and Pr) compounds|S. Nallamuthu,Andrea Dzubinska,Marian Reiffers,Jesus Rodriguez Fernandez,R. Nagalakshmi###
(1457336, 1457338)
Ferromagnetism in orthorhombic R<missing VAR>AgAl3 (R<missing VAR>  Ce and Pr) compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 3.8, 'K', 4],[155.0, 5.8, 'K', 4],[300.0, 51, 'K', 7],[303.0, 180, 'K', 7],[359.0, 15, 'K', 8]

Ce
###Ferromagnetism in orthorhombic RAgAl3 (R = Ce and Pr) compounds|S. Nallamuthu,Andrea Dzubinska,Marian Reiffers,Jesus Rodriguez Fernandez,R. Nagalakshmi###
(1457344, 1457344)
Ferromagnetism in orthorhombic R<missing VAR>AgAl3 (R<missing VAR>  Ce and Pr) compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 3.8, 'K', 4],[149.0, 5.8, 'K', 4],[294.0, 51, 'K', 7],[297.0, 180, 'K', 7],[353.0, 15, 'K', 8]

Pr
###Ferromagnetism in orthorhombic RAgAl3 (R = Ce and Pr) compounds|S. Nallamuthu,Andrea Dzubinska,Marian Reiffers,Jesus Rodriguez Fernandez,R. Nagalakshmi###
(1457348, 1457348)
Ferromagnetism in orthorhombic R<missing VAR>AgAl3 (R<missing VAR>  Ce and Pr) compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 3.8, 'K', 4],[145.0, 5.8, 'K', 4],[290.0, 51, 'K', 7],[293.0, 180, 'K', 7],[349.0, 15, 'K', 8]

Al3
###Ferromagnetism in orthorhombic RAgAl3 (R = Ce and Pr) compounds|S. Nallamuthu,Andrea Dzubinska,Marian Reiffers,Jesus Rodriguez Fernandez,R. Nagalakshmi###
(1457384, 1457385)
 We present a detailed study on magnetic, thermodynamic and transportproperties of polycrystalline R<missing VAR>AgAl3(R<missing VAR>  Ce and Pr) compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 3.8, 'K', 3],[108.0, 5.8, 'K', 3],[253.0, 51, 'K', 6],[256.0, 180, 'K', 6],[312.0, 15, 'K', 7]

Ce
###Ferromagnetism in orthorhombic RAgAl3 (R = Ce and Pr) compounds|S. Nallamuthu,Andrea Dzubinska,Marian Reiffers,Jesus Rodriguez Fernandez,R. Nagalakshmi###
(1457390, 1457390)
 We present a detailed study on magnetic, thermodynamic and transportproperties of polycrystalline R<missing VAR>AgAl3(R<missing VAR>  Ce and Pr) compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 3.8, 'K', 3],[103.0, 5.8, 'K', 3],[248.0, 51, 'K', 6],[251.0, 180, 'K', 6],[307.0, 15, 'K', 7]

Pr
###Ferromagnetism in orthorhombic RAgAl3 (R = Ce and Pr) compounds|S. Nallamuthu,Andrea Dzubinska,Marian Reiffers,Jesus Rodriguez Fernandez,R. Nagalakshmi###
(1457394, 1457394)
 We present a detailed study on magnetic, thermodynamic and transportproperties of polycrystalline R<missing VAR>AgAl3(R<missing VAR>  Ce and Pr) compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 3.8, 'K', 3],[99.0, 5.8, 'K', 3],[244.0, 51, 'K', 6],[247.0, 180, 'K', 6],[303.0, 15, 'K', 7]

BaAl4
###Ferromagnetism in orthorhombic RAgAl3 (R = Ce and Pr) compounds|S. Nallamuthu,Andrea Dzubinska,Marian Reiffers,Jesus Rodriguez Fernandez,R. Nagalakshmi###
(1457427, 1457429)
 Both compoundscrystallize in orthorhombic structure, which is distorted from the tetragonalBaAl4 structure with the space group Cmcm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 3.8, 'K', 2],[64.0, 5.8, 'K', 2],[209.0, 51, 'K', 5],[212.0, 180, 'K', 5],[268.0, 15, 'K', 6]

CeAgAl3
###Ferromagnetism in orthorhombic RAgAl3 (R = Ce and Pr) compounds|S. Nallamuthu,Andrea Dzubinska,Marian Reiffers,Jesus Rodriguez Fernandez,R. Nagalakshmi###
(1457468, 1457471)
 CeAgAl3 and PrAgAl3 orderferromagnetically at T<missing VAR>C  3.8 K and 5.8 K, respectively as it was confirmedfrom magnetic measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 3.8, 'K', 0],[22.0, 5.8, 'K', 0],[167.0, 51, 'K', 3],[170.0, 180, 'K', 3],[226.0, 15, 'K', 4]

PrAgAl3
###Ferromagnetism in orthorhombic RAgAl3 (R = Ce and Pr) compounds|S. Nallamuthu,Andrea Dzubinska,Marian Reiffers,Jesus Rodriguez Fernandez,R. Nagalakshmi###
(1457475, 1457478)
 CeAgAl3 and PrAgAl3 orderferromagnetically at T<missing VAR>C  3.8 K and 5.8 K, respectively as it was confirmedfrom magnetic measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 3.8, 'K', 0],[15.0, 5.8, 'K', 0],[160.0, 51, 'K', 3],[163.0, 180, 'K', 3],[219.0, 15, 'K', 4]

C
###Ferromagnetism in orthorhombic RAgAl3 (R = Ce and Pr) compounds|S. Nallamuthu,Andrea Dzubinska,Marian Reiffers,Jesus Rodriguez Fernandez,R. Nagalakshmi###
(1457488, 1457488)
 CeAgAl3 and PrAgAl3 orderferromagnetically at T<missing VAR>C  3.8 K and 5.8 K, respectively as it was confirmedfrom magnetic measurements.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 3.8, 'K', 0],[5.0, 5.8, 'K', 0],[150.0, 51, 'K', 3],[153.0, 180, 'K', 3],[209.0, 15, 'K', 4]

CeAgAl3
###Ferromagnetism in orthorhombic RAgAl3 (R = Ce and Pr) compounds|S. Nallamuthu,Andrea Dzubinska,Marian Reiffers,Jesus Rodriguez Fernandez,R. Nagalakshmi###
(1457514, 1457517)
 CeAgAl3 exhibits heavy Fermion behaviour.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 3.8, 'K', 1],[21.0, 5.8, 'K', 1],[121.0, 51, 'K', 2],[124.0, 180, 'K', 2],[180.0, 15, 'K', 3]

C
###Ferromagnetism in orthorhombic RAgAl3 (R = Ce and Pr) compounds|S. Nallamuthu,Andrea Dzubinska,Marian Reiffers,Jesus Rodriguez Fernandez,R. Nagalakshmi###
(1457564, 1457564)
 Thecrystalline electric field (CE<missing VAR>F) analysis of the magnetic parts of heatcapacity of CeAgAl3 and PrAgAl3 yielded to a CE<missing VAR>F level scheme with threedoublets and nine singlets and with an overall splitting of 51 K and 180 K,respectively.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 3.8, 'K', 3],[71.0, 5.8, 'K', 3],[74.0, 51, 'K', 0],[77.0, 180, 'K', 0],[133.0, 15, 'K', 1]

F
###Ferromagnetism in orthorhombic RAgAl3 (R = Ce and Pr) compounds|S. Nallamuthu,Andrea Dzubinska,Marian Reiffers,Jesus Rodriguez Fernandez,R. Nagalakshmi###
(1457566, 1457566)
 Thecrystalline electric field (CE<missing VAR>F) analysis of the magnetic parts of heatcapacity of CeAgAl3 and PrAgAl3 yielded to a CE<missing VAR>F level scheme with threedoublets and nine singlets and with an overall splitting of 51 K and 180 K,respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 3.8, 'K', 3],[73.0, 5.8, 'K', 3],[72.0, 51, 'K', 0],[75.0, 180, 'K', 0],[131.0, 15, 'K', 1]

CeAgAl3
###Ferromagnetism in orthorhombic RAgAl3 (R = Ce and Pr) compounds|S. Nallamuthu,Andrea Dzubinska,Marian Reiffers,Jesus Rodriguez Fernandez,R. Nagalakshmi###
(1457588, 1457591)
 Thecrystalline electric field (CE<missing VAR>F) analysis of the magnetic parts of heatcapacity of CeAgAl3 and PrAgAl3 yielded to a CE<missing VAR>F level scheme with threedoublets and nine singlets and with an overall splitting of 51 K and 180 K,respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 3.8, 'K', 3],[95.0, 5.8, 'K', 3],[47.0, 51, 'K', 0],[50.0, 180, 'K', 0],[106.0, 15, 'K', 1]

PrAgAl3
###Ferromagnetism in orthorhombic RAgAl3 (R = Ce and Pr) compounds|S. Nallamuthu,Andrea Dzubinska,Marian Reiffers,Jesus Rodriguez Fernandez,R. Nagalakshmi###
(1457595, 1457598)
 Thecrystalline electric field (CE<missing VAR>F) analysis of the magnetic parts of heatcapacity of CeAgAl3 and PrAgAl3 yielded to a CE<missing VAR>F level scheme with threedoublets and nine singlets and with an overall splitting of 51 K and 180 K,respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 3.8, 'K', 3],[102.0, 5.8, 'K', 3],[40.0, 51, 'K', 0],[43.0, 180, 'K', 0],[99.0, 15, 'K', 1]

C
###Ferromagnetism in orthorhombic RAgAl3 (R = Ce and Pr) compounds|S. Nallamuthu,Andrea Dzubinska,Marian Reiffers,Jesus Rodriguez Fernandez,R. Nagalakshmi###
(1457606, 1457606)
 Thecrystalline electric field (CE<missing VAR>F) analysis of the magnetic parts of heatcapacity of CeAgAl3 and PrAgAl3 yielded to a CE<missing VAR>F level scheme with threedoublets and nine singlets and with an overall splitting of 51 K and 180 K,respectively.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 3.8, 'K', 3],[113.0, 5.8, 'K', 3],[32.0, 51, 'K', 0],[35.0, 180, 'K', 0],[91.0, 15, 'K', 1]

F
###Ferromagnetism in orthorhombic RAgAl3 (R = Ce and Pr) compounds|S. Nallamuthu,Andrea Dzubinska,Marian Reiffers,Jesus Rodriguez Fernandez,R. Nagalakshmi###
(1457608, 1457608)
 Thecrystalline electric field (CE<missing VAR>F) analysis of the magnetic parts of heatcapacity of CeAgAl3 and PrAgAl3 yielded to a CE<missing VAR>F level scheme with threedoublets and nine singlets and with an overall splitting of 51 K and 180 K,respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 3.8, 'K', 3],[115.0, 5.8, 'K', 3],[30.0, 51, 'K', 0],[33.0, 180, 'K', 0],[89.0, 15, 'K', 1]

CeAgAl3
###Ferromagnetism in orthorhombic RAgAl3 (R = Ce and Pr) compounds|S. Nallamuthu,Andrea Dzubinska,Marian Reiffers,Jesus Rodriguez Fernandez,R. Nagalakshmi###
(1457662, 1457665)
 Fit yielded a magnetic doublet state for CeAgAl3, whereas forPrAgAl3 a pseudo-doublet ground-state with an energy difference of 15 K hasbeen obtained.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[172.0, 3.8, 'K', 4],[169.0, 5.8, 'K', 4],[24.0, 51, 'K', 1],[21.0, 180, 'K', 1],[32.0, 15, 'K', 0]

PrAgAl3
###Ferromagnetism in orthorhombic RAgAl3 (R = Ce and Pr) compounds|S. Nallamuthu,Andrea Dzubinska,Marian Reiffers,Jesus Rodriguez Fernandez,R. Nagalakshmi###
(1457673, 1457676)
 Fit yielded a magnetic doublet state for CeAgAl3, whereas forPrAgAl3 a pseudo-doublet ground-state with an energy difference of 15 K hasbeen obtained.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[183.0, 3.8, 'K', 4],[180.0, 5.8, 'K', 4],[35.0, 51, 'K', 1],[32.0, 180, 'K', 1],[21.0, 15, 'K', 0]

Ce
###Ferromagnetism in orthorhombic RAgAl3 (R = Ce and Pr) compounds|S. Nallamuthu,Andrea Dzubinska,Marian Reiffers,Jesus Rodriguez Fernandez,R. Nagalakshmi###
(1457771, 1457771)
 Negative magnetoresistance(MR) due to the ferromagnetic ordering has been observed for both Ce and Prcompounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[281.0, 3.8, 'K', 6],[278.0, 5.8, 'K', 6],[133.0, 51, 'K', 3],[130.0, 180, 'K', 3],[74.0, 15, 'K', 2]

Pr
###Ferromagnetism in orthorhombic RAgAl3 (R = Ce and Pr) compounds|S. Nallamuthu,Andrea Dzubinska,Marian Reiffers,Jesus Rodriguez Fernandez,R. Nagalakshmi###
(1457775, 1457775)
 Negative magnetoresistance(MR) due to the ferromagnetic ordering has been observed for both Ce and Prcompounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[285.0, 3.8, 'K', 6],[282.0, 5.8, 'K', 6],[137.0, 51, 'K', 3],[134.0, 180, 'K', 3],[78.0, 15, 'K', 2]

P
###Large influence of capping layers on tunnel magnetoresistance in magnetic tunnel junctions|Jiaqi Zhou,Weisheng Zhao,Yin Wang,Shouzhong Peng,Junfeng Qiao,Li Su,Lang Zeng,Na Lei,Lei Liu,Youguang Zhang,Arnaud Bournel###
(1457846, 1457846)
 It has been reported in experiments that capping layers which enhance theperpendicular magnetic anisotropy (PM<missing VAR>A) of magnetic tunnel junctions (MTJs)induce great impact on the tunnel magnetoresistance (TMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Large influence of capping layers on tunnel magnetoresistance in magnetic tunnel junctions|Jiaqi Zhou,Weisheng Zhao,Yin Wang,Shouzhong Peng,Junfeng Qiao,Li Su,Lang Zeng,Na Lei,Lei Liu,Youguang Zhang,Arnaud Bournel###
(1458147, 1458147)
 This phenomenon isattributed to the resonant tunnel transmission effect and we explained it bythe layer-resolved density of states (D<missing VAR>OS).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Large influence of capping layers on tunnel magnetoresistance in magnetic tunnel junctions|Jiaqi Zhou,Weisheng Zhao,Yin Wang,Shouzhong Peng,Junfeng Qiao,Li Su,Lang Zeng,Na Lei,Lei Liu,Youguang Zhang,Arnaud Bournel###
(1458151, 1458151)
 In order to explore transportproperties in MTJs, the density of scattering states (D<missing VAR>OSS) was studied fromthe point of band symmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Large influence of capping layers on tunnel magnetoresistance in magnetic tunnel junctions|Jiaqi Zhou,Weisheng Zhao,Yin Wang,Shouzhong Peng,Junfeng Qiao,Li Su,Lang Zeng,Na Lei,Lei Liu,Youguang Zhang,Arnaud Bournel###
(1458185, 1458185)
 In order to explore transportproperties in MTJs, the density of scattering states (D<missing VAR>OSS) was studied fromthe point of band symmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFe
###Large influence of capping layers on tunnel magnetoresistance in magnetic tunnel junctions|Jiaqi Zhou,Weisheng Zhao,Yin Wang,Shouzhong Peng,Junfeng Qiao,Li Su,Lang Zeng,Na Lei,Lei Liu,Youguang Zhang,Arnaud Bournel###
(1458216, 1458217)
 It has been found that CoFetungsten interfaceblocks scattering states transmission in the anti-parallel condition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cd3As2
###Large transverse Hall-like signal in topological Dirac semimetal Cd3As2|Shih-Ting Guo,R. Sankar,Yung-Yu Chien,Tay-Rong Chang,Horng-Tay Jeng,Guang-Yu Guo,F. C. Chou,Wei-Li Lee###
(1458344, 1458347)
Large transverse Hall-like signal in topological Dirac semimetal Cd3As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 3, 'D', 2],[378.0, 3, 'D', 6]

As2
###Large transverse Hall-like signal in topological Dirac semimetal Cd3As2|Shih-Ting Guo,R. Sankar,Yung-Yu Chien,Tay-Rong Chang,Horng-Tay Jeng,Guang-Yu Guo,F. C. Chou,Wei-Li Lee###
(1458359, 1458360)
 Cadmium arsenide (rm Cd3As2) is known for its inverted band structureand ultra-high electron mobility.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 3, 'D', 1],[365.0, 3, 'D', 5]

S
###Large transverse Hall-like signal in topological Dirac semimetal Cd3As2|Shih-Ting Guo,R. Sankar,Yung-Yu Chien,Tay-Rong Chang,Horng-Tay Jeng,Guang-Yu Guo,F. C. Chou,Wei-Li Lee###
(1458412, 1458412)
 It has been theoretically predicted and alsoconfirmed by ARPES experiments to exhibit a 3D Dirac semimetal phase containingdegenerate Weyl nodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 3, 'D', 0],[313.0, 3, 'D', 4]

Cd3As2
###Large transverse Hall-like signal in topological Dirac semimetal Cd3As2|Shih-Ting Guo,R. Sankar,Yung-Yu Chien,Tay-Rong Chang,Horng-Tay Jeng,Guang-Yu Guo,F. C. Chou,Wei-Li Lee###
(1458462, 1458465)
 From magneto-transport measurements in high qualitysingle crystals of rm Cd3As2, a small effective mass m<missing VAR> approx 0.05me is determined from the Shubnikov-de Haas (SdH) oscillations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 3, 'D', 1],[260.0, 3, 'D', 3]

H
###Large transverse Hall-like signal in topological Dirac semimetal Cd3As2|Shih-Ting Guo,R. Sankar,Yung-Yu Chien,Tay-Rong Chang,Horng-Tay Jeng,Guang-Yu Guo,F. C. Chou,Wei-Li Lee###
(1458502, 1458502)
 From magneto-transport measurements in high qualitysingle crystals of rm Cd3As2, a small effective mass m<missing VAR> approx 0.05me is determined from the Shubnikov-de Haas (SdH) oscillations.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 3, 'D', 1],[223.0, 3, 'D', 3]

In
###Large transverse Hall-like signal in topological Dirac semimetal Cd3As2|Shih-Ting Guo,R. Sankar,Yung-Yu Chien,Tay-Rong Chang,Horng-Tay Jeng,Guang-Yu Guo,F. C. Chou,Wei-Li Lee###
(1458508, 1458508)
 In certainfield orientations, we find a splitting of the SdH oscillation frequency in theFFT<missing VAR> spectrum suggesting a possible lifting of the double degeneracy in accordwith the helical spin texture at outer and inner Fermi surfaces with oppositechirality predicted by our textitab initio calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 3, 'D', 2],[217.0, 3, 'D', 2]

H
###Large transverse Hall-like signal in topological Dirac semimetal Cd3As2|Shih-Ting Guo,R. Sankar,Yung-Yu Chien,Tay-Rong Chang,Horng-Tay Jeng,Guang-Yu Guo,F. C. Chou,Wei-Li Lee###
(1458531, 1458531)
 In certainfield orientations, we find a splitting of the SdH oscillation frequency in theFFT<missing VAR> spectrum suggesting a possible lifting of the double degeneracy in accordwith the helical spin texture at outer and inner Fermi surfaces with oppositechirality predicted by our textitab initio calculations.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 3, 'D', 2],[194.0, 3, 'D', 2]

FF
###Large transverse Hall-like signal in topological Dirac semimetal Cd3As2|Shih-Ting Guo,R. Sankar,Yung-Yu Chien,Tay-Rong Chang,Horng-Tay Jeng,Guang-Yu Guo,F. C. Chou,Wei-Li Lee###
(1458542, 1458543)
 In certainfield orientations, we find a splitting of the SdH oscillation frequency in theFFT<missing VAR> spectrum suggesting a possible lifting of the double degeneracy in accordwith the helical spin texture at outer and inner Fermi surfaces with oppositechirality predicted by our textitab initio calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 3, 'D', 2],[182.0, 3, 'D', 2]

Cd3As2
###Large transverse Hall-like signal in topological Dirac semimetal Cd3As2|Shih-Ting Guo,R. Sankar,Yung-Yu Chien,Tay-Rong Chang,Horng-Tay Jeng,Guang-Yu Guo,F. C. Chou,Wei-Li Lee###
(1458663, 1458666)
 Strikingly, a largeantisymmetric magnetoresistance with respect to the applied magnetic fields isuncovered over a wide temperature range in needle crystal of rm Cd3As2with its long axis along [112] crystal direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[242.0, 3, 'D', 3],[59.0, 3, 'D', 1]

Cd
###Large transverse Hall-like signal in topological Dirac semimetal Cd3As2|Shih-Ting Guo,R. Sankar,Yung-Yu Chien,Tay-Rong Chang,Horng-Tay Jeng,Guang-Yu Guo,F. C. Chou,Wei-Li Lee###
(1458760, 1458760)
 It reveals a possiblecontribution of intrinsic anomalous velocity term in the transport equationresulting from a unique 3D Rashba-like spin splitted bands that can be obtainedfrom band calculations with the inclusion of Cd antisite defects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[339.0, 3, 'D', 4],[35.0, 3, 'D', 0]

Sr2RuO4
###Probing chiral superconductivity in Sr$_{2}$RuO$_{4}$ underneath the surface by point contact measurements|He Wang,Jiawei Luo,Weijian Lou,Jian Wei,J. E. Ortmann,Z. Q. Mao,Y. Liu###
(1458783, 1458787)
Probing chiral superconductivity in Sr2RuO4 underneath the surface by point contact measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr2RuO4
###Probing chiral superconductivity in Sr$_{2}$RuO$_{4}$ underneath the surface by point contact measurements|He Wang,Jiawei Luo,Weijian Lou,Jian Wei,J. E. Ortmann,Z. Q. Mao,Y. Liu###
(1458804, 1458808)
 Sr2RuO4 (SR<missing VAR>O) is the prime candidate for chiral p<missing VAR>-wavesuperconductor with critical temperature Tc(SR<missing VAR>O)sim1.5 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Probing chiral superconductivity in Sr$_{2}$RuO$_{4}$ underneath the surface by point contact measurements|He Wang,Jiawei Luo,Weijian Lou,Jian Wei,J. E. Ortmann,Z. Q. Mao,Y. Liu###
(1458811, 1458811)
 Sr2RuO4 (SR<missing VAR>O) is the prime candidate for chiral p<missing VAR>-wavesuperconductor with critical temperature Tc(SR<missing VAR>O)sim1.5 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Probing chiral superconductivity in Sr$_{2}$RuO$_{4}$ underneath the surface by point contact measurements|He Wang,Jiawei Luo,Weijian Lou,Jian Wei,J. E. Ortmann,Z. Q. Mao,Y. Liu###
(1458813, 1458813)
 Sr2RuO4 (SR<missing VAR>O) is the prime candidate for chiral p<missing VAR>-wavesuperconductor with critical temperature Tc(SR<missing VAR>O)sim1.5 K.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Probing chiral superconductivity in Sr$_{2}$RuO$_{4}$ underneath the surface by point contact measurements|He Wang,Jiawei Luo,Weijian Lou,Jian Wei,J. E. Ortmann,Z. Q. Mao,Y. Liu###
(1458844, 1458844)
 Sr2RuO4 (SR<missing VAR>O) is the prime candidate for chiral p<missing VAR>-wavesuperconductor with critical temperature Tc(SR<missing VAR>O)sim1.5 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Probing chiral superconductivity in Sr$_{2}$RuO$_{4}$ underneath the surface by point contact measurements|He Wang,Jiawei Luo,Weijian Lou,Jian Wei,J. E. Ortmann,Z. Q. Mao,Y. Liu###
(1458846, 1458846)
 Sr2RuO4 (SR<missing VAR>O) is the prime candidate for chiral p<missing VAR>-wavesuperconductor with critical temperature Tc(SR<missing VAR>O)sim1.5 K.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Probing chiral superconductivity in Sr$_{2}$RuO$_{4}$ underneath the surface by point contact measurements|He Wang,Jiawei Luo,Weijian Lou,Jian Wei,J. E. Ortmann,Z. Q. Mao,Y. Liu###
(1458851, 1458851)
 Sr2RuO4 (SR<missing VAR>O) is the prime candidate for chiral p<missing VAR>-wavesuperconductor with critical temperature Tc(SR<missing VAR>O)sim1.5 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(PC)
###Probing chiral superconductivity in Sr$_{2}$RuO$_{4}$ underneath the surface by point contact measurements|He Wang,Jiawei Luo,Weijian Lou,Jian Wei,J. E. Ortmann,Z. Q. Mao,Y. Liu###
(1458907, 1458910)
 We measure the field dependence of the point contact (PC) resistancebetween a tungsten tip and the SR<missing VAR>O-Ru eutectic crystal, where micrometer-sizedRu inclusions are embedded in SR<missing VAR>O with atomic sharp interface.
Featurization successful!
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Probing chiral superconductivity in Sr$_{2}$RuO$_{4}$ underneath the surface by point contact measurements|He Wang,Jiawei Luo,Weijian Lou,Jian Wei,J. E. Ortmann,Z. Q. Mao,Y. Liu###
(1458927, 1458927)
 We measure the field dependence of the point contact (PC) resistancebetween a tungsten tip and the SR<missing VAR>O-Ru eutectic crystal, where micrometer-sizedRu inclusions are embedded in SR<missing VAR>O with atomic sharp interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Probing chiral superconductivity in Sr$_{2}$RuO$_{4}$ underneath the surface by point contact measurements|He Wang,Jiawei Luo,Weijian Lou,Jian Wei,J. E. Ortmann,Z. Q. Mao,Y. Liu###
(1458929, 1458929)
 We measure the field dependence of the point contact (PC) resistancebetween a tungsten tip and the SR<missing VAR>O-Ru eutectic crystal, where micrometer-sizedRu inclusions are embedded in SR<missing VAR>O with atomic sharp interface.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ru
###Probing chiral superconductivity in Sr$_{2}$RuO$_{4}$ underneath the surface by point contact measurements|He Wang,Jiawei Luo,Weijian Lou,Jian Wei,J. E. Ortmann,Z. Q. Mao,Y. Liu###
(1458931, 1458931)
 We measure the field dependence of the point contact (PC) resistancebetween a tungsten tip and the SR<missing VAR>O-Ru eutectic crystal, where micrometer-sizedRu inclusions are embedded in SR<missing VAR>O with atomic sharp interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ru
###Probing chiral superconductivity in Sr$_{2}$RuO$_{4}$ underneath the surface by point contact measurements|He Wang,Jiawei Luo,Weijian Lou,Jian Wei,J. E. Ortmann,Z. Q. Mao,Y. Liu###
(1458945, 1458945)
 We measure the field dependence of the point contact (PC) resistancebetween a tungsten tip and the SR<missing VAR>O-Ru eutectic crystal, where micrometer-sizedRu inclusions are embedded in SR<missing VAR>O with atomic sharp interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Probing chiral superconductivity in Sr$_{2}$RuO$_{4}$ underneath the surface by point contact measurements|He Wang,Jiawei Luo,Weijian Lou,Jian Wei,J. E. Ortmann,Z. Q. Mao,Y. Liu###
(1458955, 1458955)
 We measure the field dependence of the point contact (PC) resistancebetween a tungsten tip and the SR<missing VAR>O-Ru eutectic crystal, where micrometer-sizedRu inclusions are embedded in SR<missing VAR>O with atomic sharp interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Probing chiral superconductivity in Sr$_{2}$RuO$_{4}$ underneath the surface by point contact measurements|He Wang,Jiawei Luo,Weijian Lou,Jian Wei,J. E. Ortmann,Z. Q. Mao,Y. Liu###
(1458957, 1458957)
 We measure the field dependence of the point contact (PC) resistancebetween a tungsten tip and the SR<missing VAR>O-Ru eutectic crystal, where micrometer-sizedRu inclusions are embedded in SR<missing VAR>O with atomic sharp interface.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(Ru)
###Probing chiral superconductivity in Sr$_{2}$RuO$_{4}$ underneath the surface by point contact measurements|He Wang,Jiawei Luo,Weijian Lou,Jian Wei,J. E. Ortmann,Z. Q. Mao,Y. Liu###
(1458985, 1458987)
 Ruthenium is ans<missing VAR>-wave superconductor with Tc(Ru)sim0.5 K, flux pinned near the Ruinclusions can suppress its superconductivity as reflected from the PCresistance and spectra.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Probing chiral superconductivity in Sr$_{2}$RuO$_{4}$ underneath the surface by point contact measurements|He Wang,Jiawei Luo,Weijian Lou,Jian Wei,J. E. Ortmann,Z. Q. Mao,Y. Liu###
(1458991, 1458991)
 Ruthenium is ans<missing VAR>-wave superconductor with Tc(Ru)sim0.5 K, flux pinned near the Ruinclusions can suppress its superconductivity as reflected from the PCresistance and spectra.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ru
###Probing chiral superconductivity in Sr$_{2}$RuO$_{4}$ underneath the surface by point contact measurements|He Wang,Jiawei Luo,Weijian Lou,Jian Wei,J. E. Ortmann,Z. Q. Mao,Y. Liu###
(1459002, 1459002)
 Ruthenium is ans<missing VAR>-wave superconductor with Tc(Ru)sim0.5 K, flux pinned near the Ruinclusions can suppress its superconductivity as reflected from the PCresistance and spectra.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PC
###Probing chiral superconductivity in Sr$_{2}$RuO$_{4}$ underneath the surface by point contact measurements|He Wang,Jiawei Luo,Weijian Lou,Jian Wei,J. E. Ortmann,Z. Q. Mao,Y. Liu###
(1459023, 1459024)
 Ruthenium is ans<missing VAR>-wave superconductor with Tc(Ru)sim0.5 K, flux pinned near the Ruinclusions can suppress its superconductivity as reflected from the PCresistance and spectra.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Probing chiral superconductivity in Sr$_{2}$RuO$_{4}$ underneath the surface by point contact measurements|He Wang,Jiawei Luo,Weijian Lou,Jian Wei,J. E. Ortmann,Z. Q. Mao,Y. Liu###
(1459048, 1459048)
 This flux pinning effect is originated from SR<missing VAR>Otextitunderneath the surface and is very strong.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Probing chiral superconductivity in Sr$_{2}$RuO$_{4}$ underneath the surface by point contact measurements|He Wang,Jiawei Luo,Weijian Lou,Jian Wei,J. E. Ortmann,Z. Q. Mao,Y. Liu###
(1459050, 1459050)
 This flux pinning effect is originated from SR<missing VAR>Otextitunderneath the surface and is very strong.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Probing chiral superconductivity in Sr$_{2}$RuO$_{4}$ underneath the surface by point contact measurements|He Wang,Jiawei Luo,Weijian Lou,Jian Wei,J. E. Ortmann,Z. Q. Mao,Y. Liu###
(1459098, 1459098)
 To fully remove it, one hasto thermal cycle the sample above Tc(SR<missing VAR>O).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Probing chiral superconductivity in Sr$_{2}$RuO$_{4}$ underneath the surface by point contact measurements|He Wang,Jiawei Luo,Weijian Lou,Jian Wei,J. E. Ortmann,Z. Q. Mao,Y. Liu###
(1459100, 1459100)
 To fully remove it, one hasto thermal cycle the sample above Tc(SR<missing VAR>O).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Signatures of an annular Fermi sea|Insun Jo,Yang Liu,L. N. Pfeiffer,K. W. West,K. W. Baldwin,M. Shayegan,R. Winkler###
(1459335, 1459336)
 We report Shubnikov-de Haas oscillations measurements revealing experimentalsignatures of an annular Fermi sea that develops near the energy band edge ofthe excited subband of two-dimensional holes confined in a wide GaAs quantumwell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Signatures of an annular Fermi sea|Insun Jo,Yang Liu,L. N. Pfeiffer,K. W. West,K. W. Baldwin,M. Shayegan,R. Winkler###
(1459344, 1459344)
 As we increase the hole density, when the Fermi level reaches the excitedsubband edge, the low-field magnetoresistance traces show a sudden emergence ofnew oscillations at an unexpectedly large frequency whose value doestextitnot correspond to the (negligible) density of holes in the excitedsubband.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Chiral anomaly from strain-induced gauge fields in Dirac and Weyl semimetals|D. I. Pikulin,Anffany Chen,M. Franz###
(1459807, 1459807)
 Here we predict that the chiral anomaly occurs - and has experimentallyobservable consequences - when real electromagnetic fields E<missing VAR> and B are replacedby strain-induced pseudo-electromagnetic fields e<missing VAR> and b<missing VAR>.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Chiral anomaly from strain-induced gauge fields in Dirac and Weyl semimetals|D. I. Pikulin,Anffany Chen,M. Franz###
(1459873, 1459873)
 In accord with the chiral anomaly equation we predict a negativecontribution to the wire resistance proportional to the square of the torsionstrength.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cd3As2
###Chiral anomaly from strain-induced gauge fields in Dirac and Weyl semimetals|D. I. Pikulin,Anffany Chen,M. Franz###
(1460103, 1460106)
 These novel manifestations of the chiral anomaly aremost striking in the semimetals with a single pair of Weyl nodes but also occurin Dirac semimetals such as Cd3As2 and Na3Bi and Weyl semimetals with unbrokentime reversal symmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Na3Bi
###Chiral anomaly from strain-induced gauge fields in Dirac and Weyl semimetals|D. I. Pikulin,Anffany Chen,M. Franz###
(1460110, 1460112)
 These novel manifestations of the chiral anomaly aremost striking in the semimetals with a single pair of Weyl nodes but also occurin Dirac semimetals such as Cd3As2 and Na3Bi and Weyl semimetals with unbrokentime reversal symmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(Ho)
###Reading and Writing Single-Atom Magnets|Fabian D. Natterer,Kai Yang,William Paul,Philip Willke,Taeyoung Choi,Thomas Greber,Andreas J. Heinrich,Christopher P. Lutz###
(1460259, 1460261)
 Long magnetic relaxation times weredemonstrated in molecular magnets containing one lanthanide atom, and recentlyin ensembles of single holmium (Ho) atoms supported on magnesium oxide (MgO).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(MgO)
###Reading and Writing Single-Atom Magnets|Fabian D. Natterer,Kai Yang,William Paul,Philip Willke,Taeyoung Choi,Thomas Greber,Andreas J. Heinrich,Christopher P. Lutz###
(1460273, 1460276)
 Long magnetic relaxation times weredemonstrated in molecular magnets containing one lanthanide atom, and recentlyin ensembles of single holmium (Ho) atoms supported on magnesium oxide (MgO).
Featurization successful!
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ho
###Reading and Writing Single-Atom Magnets|Fabian D. Natterer,Kai Yang,William Paul,Philip Willke,Taeyoung Choi,Thomas Greber,Andreas J. Heinrich,Christopher P. Lutz###
(1460348, 1460348)
Here we demonstrate the reading and writing of individual Ho atoms on MgO, andshow that they independently retain their magnetic information over many hours.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Reading and Writing Single-Atom Magnets|Fabian D. Natterer,Kai Yang,William Paul,Philip Willke,Taeyoung Choi,Thomas Greber,Andreas J. Heinrich,Christopher P. Lutz###
(1460354, 1460355)
Here we demonstrate the reading and writing of individual Ho atoms on MgO, andshow that they independently retain their magnetic information over many hours.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ho
###Reading and Writing Single-Atom Magnets|Fabian D. Natterer,Kai Yang,William Paul,Philip Willke,Taeyoung Choi,Thomas Greber,Andreas J. Heinrich,Christopher P. Lutz###
(1460391, 1460391)
We read the Ho states by tunnel magnetoresistance and write with current pulsesusing a scanning tunneling microscope.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Reading and Writing Single-Atom Magnets|Fabian D. Natterer,Kai Yang,William Paul,Philip Willke,Taeyoung Choi,Thomas Greber,Andreas J. Heinrich,Christopher P. Lutz###
(1460469, 1460469)
 The magnetic origin of the long-livedstates is confirmed by single-atom electron paramagnetic resonance (EPR) on anearby Fe sensor atom, which shows that Ho has a large out-of-plane moment of(10.1 pm 0.1) murm B on this surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ho
###Reading and Writing Single-Atom Magnets|Fabian D. Natterer,Kai Yang,William Paul,Philip Willke,Taeyoung Choi,Thomas Greber,Andreas J. Heinrich,Christopher P. Lutz###
(1460482, 1460482)
 The magnetic origin of the long-livedstates is confirmed by single-atom electron paramagnetic resonance (EPR) on anearby Fe sensor atom, which shows that Ho has a large out-of-plane moment of(10.1 pm 0.1) murm B on this surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Reading and Writing Single-Atom Magnets|Fabian D. Natterer,Kai Yang,William Paul,Philip Willke,Taeyoung Choi,Thomas Greber,Andreas J. Heinrich,Christopher P. Lutz###
(1460512, 1460512)
 The magnetic origin of the long-livedstates is confirmed by single-atom electron paramagnetic resonance (EPR) on anearby Fe sensor atom, which shows that Ho has a large out-of-plane moment of(10.1 pm 0.1) murm B on this surface.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Reading and Writing Single-Atom Magnets|Fabian D. Natterer,Kai Yang,William Paul,Philip Willke,Taeyoung Choi,Thomas Greber,Andreas J. Heinrich,Christopher P. Lutz###
(1460521, 1460521)
 In order to demonstrateindependent reading and writing, we built an atomic scale structure with two Hobits to which we write the four possible states and which we read out remotelyby EPR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ho
###Reading and Writing Single-Atom Magnets|Fabian D. Natterer,Kai Yang,William Paul,Philip Willke,Taeyoung Choi,Thomas Greber,Andreas J. Heinrich,Christopher P. Lutz###
(1460555, 1460555)
 In order to demonstrateindependent reading and writing, we built an atomic scale structure with two Hobits to which we write the four possible states and which we read out remotelyby EPR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Picosecond all-optical switching of magnetic tunnel junctions|Jun-Yang Chen,Li He,Jian-Ping Wang,Mo Li###
(1460706, 1460706)
 Control of magnetism without using magnetic fields enables large-scaleintegration of spintronic devices for memory, computation and communication inthe beyond-CM<missing VAR>OS era.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[275.0, 0.6, '%', 5]

OS
###Picosecond all-optical switching of magnetic tunnel junctions|Jun-Yang Chen,Li He,Jian-Ping Wang,Mo Li###
(1460708, 1460709)
 Control of magnetism without using magnetic fields enables large-scaleintegration of spintronic devices for memory, computation and communication inthe beyond-CM<missing VAR>OS era.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[272.0, 0.6, '%', 5]

GdFeCo
###Picosecond all-optical switching of magnetic tunnel junctions|Jun-Yang Chen,Li He,Jian-Ping Wang,Mo Li###
(1460932, 1460934)
 This first optically switchable MTJ uses ferrimagneticGdFeCo as the free layer, and its switching is directly readout by measuringits tunneling magnetoresistance with a DR/R<missing VAR> ratio of 0.6%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 0.6, '%', 0]

CeRuSn3
###Crystal field states of Kondo lattice heavy fermions CeRuSn3 and CeRhSn3|V. K. Anand,D. T. Adroja,D. Britz,A. M. Strydom,J. W. Taylor,W. Kockelmann###
(1461123, 1461126)
Crystal field states of Kondo lattice heavy fermions CeRuSn3 and CeRhSn3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[259.0, 7.0, ',', 5],[261.0, 12.2, 'and', 5],[262.0, 37.2, 'meV', 5],[448.0, 4.6, 'K', 9]

CeRhSn3
###Crystal field states of Kondo lattice heavy fermions CeRuSn3 and CeRhSn3|V. K. Anand,D. T. Adroja,D. Britz,A. M. Strydom,J. W. Taylor,W. Kockelmann###
(1461130, 1461133)
Crystal field states of Kondo lattice heavy fermions CeRuSn3 and CeRhSn3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0.6,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[252.0, 7.0, ',', 5],[254.0, 12.2, 'and', 5],[255.0, 37.2, 'meV', 5],[441.0, 4.6, 'K', 9]

CeRuSn3
###Crystal field states of Kondo lattice heavy fermions CeRuSn3 and CeRhSn3|V. K. Anand,D. T. Adroja,D. Britz,A. M. Strydom,J. W. Taylor,W. Kockelmann###
(1461177, 1461180)
 Inelastic neutron scattering experiments have been carried out to determinethe crystal field states of the Kondo lattice heavy fermions CeRuSn3 andCeRhSn3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, 7.0, ',', 4],[207.0, 12.2, 'and', 4],[208.0, 37.2, 'meV', 4],[394.0, 4.6, 'K', 8]

CeRhSn3
###Crystal field states of Kondo lattice heavy fermions CeRuSn3 and CeRhSn3|V. K. Anand,D. T. Adroja,D. Britz,A. M. Strydom,J. W. Taylor,W. Kockelmann###
(1461185, 1461188)
 Inelastic neutron scattering experiments have been carried out to determinethe crystal field states of the Kondo lattice heavy fermions CeRuSn3 andCeRhSn3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0.6,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[197.0, 7.0, ',', 4],[199.0, 12.2, 'and', 4],[200.0, 37.2, 'meV', 4],[386.0, 4.6, 'K', 8]

LaRuSn3
###Crystal field states of Kondo lattice heavy fermions CeRuSn3 and CeRhSn3|V. K. Anand,D. T. Adroja,D. Britz,A. M. Strydom,J. W. Taylor,W. Kockelmann###
(1461201, 1461204)
 Both the compounds crystallize in LaRuSn3-type cubic structure (spacegroup Pm-3n) in which the Ce atoms occupy two distinct crystallographic siteswith cubic (m<missing VAR>-3) and tetragonal (-4m<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.6,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 7.0, ',', 3],[183.0, 12.2, 'and', 3],[184.0, 37.2, 'meV', 3],[370.0, 4.6, 'K', 7]

Pm
###Crystal field states of Kondo lattice heavy fermions CeRuSn3 and CeRhSn3|V. K. Anand,D. T. Adroja,D. Britz,A. M. Strydom,J. W. Taylor,W. Kockelmann###
(1461218, 1461218)
 Both the compounds crystallize in LaRuSn3-type cubic structure (spacegroup Pm-3n) in which the Ce atoms occupy two distinct crystallographic siteswith cubic (m<missing VAR>-3) and tetragonal (-4m<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 7.0, ',', 3],[169.0, 12.2, 'and', 3],[170.0, 37.2, 'meV', 3],[356.0, 4.6, 'K', 7]

Ce
###Crystal field states of Kondo lattice heavy fermions CeRuSn3 and CeRhSn3|V. K. Anand,D. T. Adroja,D. Britz,A. M. Strydom,J. W. Taylor,W. Kockelmann###
(1461230, 1461230)
 Both the compounds crystallize in LaRuSn3-type cubic structure (spacegroup Pm-3n) in which the Ce atoms occupy two distinct crystallographic siteswith cubic (m<missing VAR>-3) and tetragonal (-4m<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 7.0, ',', 3],[157.0, 12.2, 'and', 3],[158.0, 37.2, 'meV', 3],[344.0, 4.6, 'K', 7]

INS
###Crystal field states of Kondo lattice heavy fermions CeRuSn3 and CeRhSn3|V. K. Anand,D. T. Adroja,D. Britz,A. M. Strydom,J. W. Taylor,W. Kockelmann###
(1461274, 1461276)
 The INS data ofCeRuSn3 reveal the presence of a broad excitation centered around 6-8 meV whichis accounted by a model based on crystal electric field (CE<missing VAR>F) excitations.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 7.0, ',', 1],[111.0, 12.2, 'and', 1],[112.0, 37.2, 'meV', 1],[298.0, 4.6, 'K', 5]

CeRuSn3
###Crystal field states of Kondo lattice heavy fermions CeRuSn3 and CeRhSn3|V. K. Anand,D. T. Adroja,D. Britz,A. M. Strydom,J. W. Taylor,W. Kockelmann###
(1461283, 1461286)
 The INS data ofCeRuSn3 reveal the presence of a broad excitation centered around 6-8 meV whichis accounted by a model based on crystal electric field (CE<missing VAR>F) excitations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 7.0, ',', 1],[101.0, 12.2, 'and', 1],[102.0, 37.2, 'meV', 1],[288.0, 4.6, 'K', 5]

V
###Crystal field states of Kondo lattice heavy fermions CeRuSn3 and CeRhSn3|V. K. Anand,D. T. Adroja,D. Britz,A. M. Strydom,J. W. Taylor,W. Kockelmann###
(1461311, 1461311)
 The INS data ofCeRuSn3 reveal the presence of a broad excitation centered around 6-8 meV whichis accounted by a model based on crystal electric field (CE<missing VAR>F) excitations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 7.0, ',', 1],[76.0, 12.2, 'and', 1],[77.0, 37.2, 'meV', 1],[263.0, 4.6, 'K', 5]

C
###Crystal field states of Kondo lattice heavy fermions CeRuSn3 and CeRhSn3|V. K. Anand,D. T. Adroja,D. Britz,A. M. Strydom,J. W. Taylor,W. Kockelmann###
(1461337, 1461337)
 The INS data ofCeRuSn3 reveal the presence of a broad excitation centered around 6-8 meV whichis accounted by a model based on crystal electric field (CE<missing VAR>F) excitations.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 7.0, ',', 1],[50.0, 12.2, 'and', 1],[51.0, 37.2, 'meV', 1],[237.0, 4.6, 'K', 5]

F
###Crystal field states of Kondo lattice heavy fermions CeRuSn3 and CeRhSn3|V. K. Anand,D. T. Adroja,D. Britz,A. M. Strydom,J. W. Taylor,W. Kockelmann###
(1461339, 1461339)
 The INS data ofCeRuSn3 reveal the presence of a broad excitation centered around 6-8 meV whichis accounted by a model based on crystal electric field (CE<missing VAR>F) excitations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 7.0, ',', 1],[48.0, 12.2, 'and', 1],[49.0, 37.2, 'meV', 1],[235.0, 4.6, 'K', 5]

INS
###Crystal field states of Kondo lattice heavy fermions CeRuSn3 and CeRhSn3|V. K. Anand,D. T. Adroja,D. Britz,A. M. Strydom,J. W. Taylor,W. Kockelmann###
(1461357, 1461359)
 Onthe other hand, the INS data of isostructural CeRhSn3 reveal three CE<missing VAR>Fexcitations around 7.0, 12.2 and 37.2 meV.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 7.0, ',', 0],[28.0, 12.2, 'and', 0],[29.0, 37.2, 'meV', 0],[215.0, 4.6, 'K', 4]

CeRhSn3
###Crystal field states of Kondo lattice heavy fermions CeRuSn3 and CeRhSn3|V. K. Anand,D. T. Adroja,D. Britz,A. M. Strydom,J. W. Taylor,W. Kockelmann###
(1461367, 1461370)
 Onthe other hand, the INS data of isostructural CeRhSn3 reveal three CE<missing VAR>Fexcitations around 7.0, 12.2 and 37.2 meV.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0.6,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 7.0, ',', 0],[17.0, 12.2, 'and', 0],[18.0, 37.2, 'meV', 0],[204.0, 4.6, 'K', 4]

C
###Crystal field states of Kondo lattice heavy fermions CeRuSn3 and CeRhSn3|V. K. Anand,D. T. Adroja,D. Britz,A. M. Strydom,J. W. Taylor,W. Kockelmann###
(1461376, 1461376)
 Onthe other hand, the INS data of isostructural CeRhSn3 reveal three CE<missing VAR>Fexcitations around 7.0, 12.2 and 37.2 meV.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 7.0, ',', 0],[11.0, 12.2, 'and', 0],[12.0, 37.2, 'meV', 0],[198.0, 4.6, 'K', 4]

F
###Crystal field states of Kondo lattice heavy fermions CeRuSn3 and CeRhSn3|V. K. Anand,D. T. Adroja,D. Britz,A. M. Strydom,J. W. Taylor,W. Kockelmann###
(1461378, 1461378)
 Onthe other hand, the INS data of isostructural CeRhSn3 reveal three CE<missing VAR>Fexcitations around 7.0, 12.2 and 37.2 meV.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 7.0, ',', 0],[9.0, 12.2, 'and', 0],[10.0, 37.2, 'meV', 0],[196.0, 4.6, 'K', 4]

Ce
###Crystal field states of Kondo lattice heavy fermions CeRuSn3 and CeRhSn3|V. K. Anand,D. T. Adroja,D. Britz,A. M. Strydom,J. W. Taylor,W. Kockelmann###
(1461408, 1461408)
 The neutron intensity sum ruleindicates that the Ce ions at both cubic and tetragonal Ce sites are in Ce3state in both CeRuSn3 and CeRhSn3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 7.0, ',', 1],[21.0, 12.2, 'and', 1],[20.0, 37.2, 'meV', 1],[166.0, 4.6, 'K', 3]

Ce
###Crystal field states of Kondo lattice heavy fermions CeRuSn3 and CeRhSn3|V. K. Anand,D. T. Adroja,D. Britz,A. M. Strydom,J. W. Taylor,W. Kockelmann###
(1461422, 1461422)
 The neutron intensity sum ruleindicates that the Ce ions at both cubic and tetragonal Ce sites are in Ce3state in both CeRuSn3 and CeRhSn3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 7.0, ',', 1],[35.0, 12.2, 'and', 1],[34.0, 37.2, 'meV', 1],[152.0, 4.6, 'K', 3]

Ce3
###Crystal field states of Kondo lattice heavy fermions CeRuSn3 and CeRhSn3|V. K. Anand,D. T. Adroja,D. Britz,A. M. Strydom,J. W. Taylor,W. Kockelmann###
(1461430, 1461431)
 The neutron intensity sum ruleindicates that the Ce ions at both cubic and tetragonal Ce sites are in Ce3state in both CeRuSn3 and CeRhSn3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 7.0, ',', 1],[43.0, 12.2, 'and', 1],[42.0, 37.2, 'meV', 1],[143.0, 4.6, 'K', 3]

CeRuSn3
###Crystal field states of Kondo lattice heavy fermions CeRuSn3 and CeRhSn3|V. K. Anand,D. T. Adroja,D. Britz,A. M. Strydom,J. W. Taylor,W. Kockelmann###
(1461440, 1461443)
 The neutron intensity sum ruleindicates that the Ce ions at both cubic and tetragonal Ce sites are in Ce3state in both CeRuSn3 and CeRhSn3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 7.0, ',', 1],[53.0, 12.2, 'and', 1],[52.0, 37.2, 'meV', 1],[131.0, 4.6, 'K', 3]

CeRhSn3
###Crystal field states of Kondo lattice heavy fermions CeRuSn3 and CeRhSn3|V. K. Anand,D. T. Adroja,D. Britz,A. M. Strydom,J. W. Taylor,W. Kockelmann###
(1461447, 1461450)
 The neutron intensity sum ruleindicates that the Ce ions at both cubic and tetragonal Ce sites are in Ce3state in both CeRuSn3 and CeRhSn3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0.6,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 7.0, ',', 1],[60.0, 12.2, 'and', 1],[59.0, 37.2, 'meV', 1],[124.0, 4.6, 'K', 3]

C
###Crystal field states of Kondo lattice heavy fermions CeRuSn3 and CeRhSn3|V. K. Anand,D. T. Adroja,D. Britz,A. M. Strydom,J. W. Taylor,W. Kockelmann###
(1461455, 1461455)
 The CE<missing VAR>F level schemes for both the compoundsare deduced.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 7.0, ',', 2],[68.0, 12.2, 'and', 2],[67.0, 37.2, 'meV', 2],[119.0, 4.6, 'K', 2]

F
###Crystal field states of Kondo lattice heavy fermions CeRuSn3 and CeRhSn3|V. K. Anand,D. T. Adroja,D. Britz,A. M. Strydom,J. W. Taylor,W. Kockelmann###
(1461457, 1461457)
 The CE<missing VAR>F level schemes for both the compoundsare deduced.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 7.0, ',', 2],[70.0, 12.2, 'and', 2],[69.0, 37.2, 'meV', 2],[117.0, 4.6, 'K', 2]

K
###Crystal field states of Kondo lattice heavy fermions CeRuSn3 and CeRhSn3|V. K. Anand,D. T. Adroja,D. Britz,A. M. Strydom,J. W. Taylor,W. Kockelmann###
(1461488, 1461488)
 We estimate the Kondo temperature T<missing VAR>K  3.1(2) K for CeRuSn3 fromneutron quasielastic linewidth in excellent agreement with that determined fromthe scaling of magnetoresistance which gives T<missing VAR>K  3.2(1) K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 7.0, ',', 3],[101.0, 12.2, 'and', 3],[100.0, 37.2, 'meV', 3],[86.0, 4.6, 'K', 1]

K
###Crystal field states of Kondo lattice heavy fermions CeRuSn3 and CeRhSn3|V. K. Anand,D. T. Adroja,D. Britz,A. M. Strydom,J. W. Taylor,W. Kockelmann###
(1461496, 1461496)
 We estimate the Kondo temperature T<missing VAR>K  3.1(2) K for CeRuSn3 fromneutron quasielastic linewidth in excellent agreement with that determined fromthe scaling of magnetoresistance which gives T<missing VAR>K  3.2(1) K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 7.0, ',', 3],[109.0, 12.2, 'and', 3],[108.0, 37.2, 'meV', 3],[78.0, 4.6, 'K', 1]

CeRuSn3
###Crystal field states of Kondo lattice heavy fermions CeRuSn3 and CeRhSn3|V. K. Anand,D. T. Adroja,D. Britz,A. M. Strydom,J. W. Taylor,W. Kockelmann###
(1461500, 1461503)
 We estimate the Kondo temperature T<missing VAR>K  3.1(2) K for CeRuSn3 fromneutron quasielastic linewidth in excellent agreement with that determined fromthe scaling of magnetoresistance which gives T<missing VAR>K  3.2(1) K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 7.0, ',', 3],[113.0, 12.2, 'and', 3],[112.0, 37.2, 'meV', 3],[71.0, 4.6, 'K', 1]

K
###Crystal field states of Kondo lattice heavy fermions CeRuSn3 and CeRhSn3|V. K. Anand,D. T. Adroja,D. Britz,A. M. Strydom,J. W. Taylor,W. Kockelmann###
(1461542, 1461542)
 We estimate the Kondo temperature T<missing VAR>K  3.1(2) K for CeRuSn3 fromneutron quasielastic linewidth in excellent agreement with that determined fromthe scaling of magnetoresistance which gives T<missing VAR>K  3.2(1) K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 7.0, ',', 3],[155.0, 12.2, 'and', 3],[154.0, 37.2, 'meV', 3],[32.0, 4.6, 'K', 1]

K
###Crystal field states of Kondo lattice heavy fermions CeRuSn3 and CeRhSn3|V. K. Anand,D. T. Adroja,D. Britz,A. M. Strydom,J. W. Taylor,W. Kockelmann###
(1461550, 1461550)
 We estimate the Kondo temperature T<missing VAR>K  3.1(2) K for CeRuSn3 fromneutron quasielastic linewidth in excellent agreement with that determined fromthe scaling of magnetoresistance which gives T<missing VAR>K  3.2(1) K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 7.0, ',', 3],[163.0, 12.2, 'and', 3],[162.0, 37.2, 'meV', 3],[24.0, 4.6, 'K', 1]

CeRhSn3
###Crystal field states of Kondo lattice heavy fermions CeRuSn3 and CeRhSn3|V. K. Anand,D. T. Adroja,D. Britz,A. M. Strydom,J. W. Taylor,W. Kockelmann###
(1461555, 1461558)
 For CeRhSn3 theneutron quasielastic linewidth gives T<missing VAR>K  4.6 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0.6,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[170.0, 7.0, ',', 4],[168.0, 12.2, 'and', 4],[167.0, 37.2, 'meV', 4],[16.0, 4.6, 'K', 0]

K
###Crystal field states of Kondo lattice heavy fermions CeRuSn3 and CeRhSn3|V. K. Anand,D. T. Adroja,D. Britz,A. M. Strydom,J. W. Taylor,W. Kockelmann###
(1461572, 1461572)
 For CeRhSn3 theneutron quasielastic linewidth gives T<missing VAR>K  4.6 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[187.0, 7.0, ',', 4],[185.0, 12.2, 'and', 4],[184.0, 37.2, 'meV', 4],[2.0, 4.6, 'K', 0]

CeRuSn3
###Crystal field states of Kondo lattice heavy fermions CeRuSn3 and CeRhSn3|V. K. Anand,D. T. Adroja,D. Britz,A. M. Strydom,J. W. Taylor,W. Kockelmann###
(1461581, 1461584)
 For both CeRuSn3 and CeRhSn3,the ground state of Ce3 turns out to be a quartet for the cubic site and adoublet for the tetragonal site.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[196.0, 7.0, ',', 5],[194.0, 12.2, 'and', 5],[193.0, 37.2, 'meV', 5],[7.0, 4.6, 'K', 1]

CeRhSn3
###Crystal field states of Kondo lattice heavy fermions CeRuSn3 and CeRhSn3|V. K. Anand,D. T. Adroja,D. Britz,A. M. Strydom,J. W. Taylor,W. Kockelmann###
(1461588, 1461591)
 For both CeRuSn3 and CeRhSn3,the ground state of Ce3 turns out to be a quartet for the cubic site and adoublet for the tetragonal site.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0.6,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[203.0, 7.0, ',', 5],[201.0, 12.2, 'and', 5],[200.0, 37.2, 'meV', 5],[14.0, 4.6, 'K', 1]

Ce3
###Crystal field states of Kondo lattice heavy fermions CeRuSn3 and CeRhSn3|V. K. Anand,D. T. Adroja,D. Britz,A. M. Strydom,J. W. Taylor,W. Kockelmann###
(1461603, 1461604)
 For both CeRuSn3 and CeRhSn3,the ground state of Ce3 turns out to be a quartet for the cubic site and adoublet for the tetragonal site.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[218.0, 7.0, ',', 5],[216.0, 12.2, 'and', 5],[215.0, 37.2, 'meV', 5],[29.0, 4.6, 'K', 1]

TaAs
###Mesoscopic superconductivity and high spin polarization coexisting at metallic point contacts on the Weyl semimetal TaAs|Leena Aggarwal,Sirshendu Gayen,Shekhar Das,Ritesh Kumar,Vicky Süß,Chandra Shekhar,Claudia Felser,Goutam Sheet###
(1461680, 1461681)
Mesoscopic superconductivity and high spin polarization coexisting at metallic point contacts on the Weyl semimetal TaAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 7, 'K', 3],[249.0, 1.2, 'meV', 4],[279.0, 60, '%', 5]

(Ag)
###Mesoscopic superconductivity and high spin polarization coexisting at metallic point contacts on the Weyl semimetal TaAs|Leena Aggarwal,Sirshendu Gayen,Shekhar Das,Ritesh Kumar,Vicky Süß,Chandra Shekhar,Claudia Felser,Goutam Sheet###
(1461838, 1461840)
 Here we show that a unique mesoscopic superconducting phase witha critical temperature up to 7 K can be realized by forming metallic pointcontacts with silver (Ag) on single crystals of TaAs, while neither Ag nor TaAsare superconductors.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 7, 'K', 0],[90.0, 1.2, 'meV', 1],[120.0, 60, '%', 2]

TaAs
###Mesoscopic superconductivity and high spin polarization coexisting at metallic point contacts on the Weyl semimetal TaAs|Leena Aggarwal,Sirshendu Gayen,Shekhar Das,Ritesh Kumar,Vicky Süß,Chandra Shekhar,Claudia Felser,Goutam Sheet###
(1461850, 1461851)
 Here we show that a unique mesoscopic superconducting phase witha critical temperature up to 7 K can be realized by forming metallic pointcontacts with silver (Ag) on single crystals of TaAs, while neither Ag nor TaAsare superconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 7, 'K', 0],[79.0, 1.2, 'meV', 1],[109.0, 60, '%', 2]

Ag
###Mesoscopic superconductivity and high spin polarization coexisting at metallic point contacts on the Weyl semimetal TaAs|Leena Aggarwal,Sirshendu Gayen,Shekhar Das,Ritesh Kumar,Vicky Süß,Chandra Shekhar,Claudia Felser,Goutam Sheet###
(1461858, 1461858)
 Here we show that a unique mesoscopic superconducting phase witha critical temperature up to 7 K can be realized by forming metallic pointcontacts with silver (Ag) on single crystals of TaAs, while neither Ag nor TaAsare superconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 7, 'K', 0],[72.0, 1.2, 'meV', 1],[102.0, 60, '%', 2]

TaAs
###Mesoscopic superconductivity and high spin polarization coexisting at metallic point contacts on the Weyl semimetal TaAs|Leena Aggarwal,Sirshendu Gayen,Shekhar Das,Ritesh Kumar,Vicky Süß,Chandra Shekhar,Claudia Felser,Goutam Sheet###
(1461862, 1461863)
 Here we show that a unique mesoscopic superconducting phase witha critical temperature up to 7 K can be realized by forming metallic pointcontacts with silver (Ag) on single crystals of TaAs, while neither Ag nor TaAsare superconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 7, 'K', 0],[67.0, 1.2, 'meV', 1],[97.0, 60, '%', 2]

B
###Mesoscopic superconductivity and high spin polarization coexisting at metallic point contacts on the Weyl semimetal TaAs|Leena Aggarwal,Sirshendu Gayen,Shekhar Das,Ritesh Kumar,Vicky Süß,Chandra Shekhar,Claudia Felser,Goutam Sheet###
(1461909, 1461909)
 The Andreev reflection spectra obtained from such pointcontacts are fitted well within a modified Blonder-Tinkham-Klapwijk (BT<missing VAR>K) modelwith a superconducting energy gap up to 1.2 meV.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 7, 'K', 1],[21.0, 1.2, 'meV', 0],[51.0, 60, '%', 1]

K
###Mesoscopic superconductivity and high spin polarization coexisting at metallic point contacts on the Weyl semimetal TaAs|Leena Aggarwal,Sirshendu Gayen,Shekhar Das,Ritesh Kumar,Vicky Süß,Chandra Shekhar,Claudia Felser,Goutam Sheet###
(1461911, 1461911)
 The Andreev reflection spectra obtained from such pointcontacts are fitted well within a modified Blonder-Tinkham-Klapwijk (BT<missing VAR>K) modelwith a superconducting energy gap up to 1.2 meV.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 7, 'K', 1],[19.0, 1.2, 'meV', 0],[49.0, 60, '%', 1]

TaAs
###Mesoscopic superconductivity and high spin polarization coexisting at metallic point contacts on the Weyl semimetal TaAs|Leena Aggarwal,Sirshendu Gayen,Shekhar Das,Ritesh Kumar,Vicky Süß,Chandra Shekhar,Claudia Felser,Goutam Sheet###
(1461986, 1461987)
 The analysis within this modelalso reveals high transport spin polarization up to 60% indicating a spinpolarized supercurrent flowing through the point contacts on TaAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[171.0, 7, 'K', 2],[56.0, 1.2, 'meV', 1],[26.0, 60, '%', 0]

PtCu2OSeO3
###Electrical detection of spiral spin structures in Pt|Cu_2OSeO_3 heterostructures|A. Aqeel,N. Vlietstra,A. Roy,M. Mostovoy,B. J. van Wees,T. T. M. Palstra###
(1462132, 1462138)
Electrical detection of spiral spin structures in PtCu2OSeO3 heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Electrical detection of spiral spin structures in Pt|Cu_2OSeO_3 heterostructures|A. Aqeel,N. Vlietstra,A. Roy,M. Mostovoy,B. J. van Wees,T. T. M. Palstra###
(1462217, 1462217)
 Here, we report the spin-Hall magnetoresistance (SMR)sensitive to the surface magnetization of the spin-spiral material, Cu2OSeO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu2OSeO3
###Electrical detection of spiral spin structures in Pt|Cu_2OSeO_3 heterostructures|A. Aqeel,N. Vlietstra,A. Roy,M. Mostovoy,B. J. van Wees,T. T. M. Palstra###
(1462244, 1462249)
 Here, we report the spin-Hall magnetoresistance (SMR)sensitive to the surface magnetization of the spin-spiral material, Cu2OSeO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Electrical detection of spiral spin structures in Pt|Cu_2OSeO_3 heterostructures|A. Aqeel,N. Vlietstra,A. Roy,M. Mostovoy,B. J. van Wees,T. T. M. Palstra###
(1462271, 1462271)
We experimentally demonstrate that the angular dependence of the SMR changesdrastically at the transition between the helical spiral and the conical spiralphases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Electrical detection of spiral spin structures in Pt|Cu_2OSeO_3 heterostructures|A. Aqeel,N. Vlietstra,A. Roy,M. Mostovoy,B. J. van Wees,T. T. M. Palstra###
(1462321, 1462321)
 Furthermore, the sign and magnitude of the SMR in the conical spiralstate are controlled by the cone angle.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Electrical detection of spiral spin structures in Pt|Cu_2OSeO_3 heterostructures|A. Aqeel,N. Vlietstra,A. Roy,M. Mostovoy,B. J. van Wees,T. T. M. Palstra###
(1462374, 1462374)
 We show that this complex behaviour canbe qualitatively explained within the SMR theory initially developed forcollinear magnets.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Electrical detection of spiral spin structures in Pt|Cu_2OSeO_3 heterostructures|A. Aqeel,N. Vlietstra,A. Roy,M. Mostovoy,B. J. van Wees,T. T. M. Palstra###
(1462392, 1462392)
 In addition, we studied the spin Seebeck effect (SSE), whichis sensitive to the bulk magnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SS
###Electrical detection of spiral spin structures in Pt|Cu_2OSeO_3 heterostructures|A. Aqeel,N. Vlietstra,A. Roy,M. Mostovoy,B. J. van Wees,T. T. M. Palstra###
(1462410, 1462411)
 In addition, we studied the spin Seebeck effect (SSE), whichis sensitive to the bulk magnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(Pt)
###Electrical detection of spiral spin structures in Pt|Cu_2OSeO_3 heterostructures|A. Aqeel,N. Vlietstra,A. Roy,M. Mostovoy,B. J. van Wees,T. T. M. Palstra###
(1462490, 1462492)
 It originates from the conversion ofthermally excited low-energy spin waves in the magnet, known as magnons, intothe spin current in the adjacent metal contact (Pt).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SS
###Electrical detection of spiral spin structures in Pt|Cu_2OSeO_3 heterostructures|A. Aqeel,N. Vlietstra,A. Roy,M. Mostovoy,B. J. van Wees,T. T. M. Palstra###
(1462497, 1462498)
 The SSE<missing VAR> displaysunconventional behavior where not only the magnitude but also the phase of theSSE<missing VAR> vary with the applied magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SS
###Electrical detection of spiral spin structures in Pt|Cu_2OSeO_3 heterostructures|A. Aqeel,N. Vlietstra,A. Roy,M. Mostovoy,B. J. van Wees,T. T. M. Palstra###
(1462531, 1462532)
 The SSE<missing VAR> displaysunconventional behavior where not only the magnitude but also the phase of theSSE<missing VAR> vary with the applied magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeSe1-xS
###Highly mobile carriers in orthorhombic phases of iron-based superconductors FeSe${}_{1-x}$S${}_{x}$|Y. A. Ovchenkov,D. A. Chareev,V. A. Kulbachinskii,V. G. Kytin,D. E. Presnov,O. S. Volkova,A. N. Vasiliev###
(1462576, 1462581)
Highly mobile carriers in orthorhombic phases of iron-based superconductors FeSe1-xSx<missing VAR>.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[45.0, 0.04, ',', 1],[47.0, 0.09, 'and', 1]

FeSe1-xS
###Highly mobile carriers in orthorhombic phases of iron-based superconductors FeSe${}_{1-x}$S${}_{x}$|Y. A. Ovchenkov,D. A. Chareev,V. A. Kulbachinskii,V. G. Kytin,D. E. Presnov,O. S. Volkova,A. N. Vasiliev###
(1462616, 1462621)
 The field and temperature dependencies of the longitudinal and Hallresistivity have been measured for FeSe1-xSx<missing VAR> (x<missing VAR>0.04, 0.09 and0.19) single crystals.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[5.0, 0.04, ',', 0],[7.0, 0.09, 'and', 0]

FeSe0.81S0.19
###Highly mobile carriers in orthorhombic phases of iron-based superconductors FeSe${}_{1-x}$S${}_{x}$|Y. A. Ovchenkov,D. A. Chareev,V. A. Kulbachinskii,V. G. Kytin,D. E. Presnov,O. S. Volkova,A. N. Vasiliev###
(1462643, 1462647)
 The sample FeSe0.81S0.19 does not show atransition to an orthorhombic phase and exhibits at low temperatures thetransport properties quite different from those of orthorhombic samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.095,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.405,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 0.04, ',', 1],[15.0, 0.09, 'and', 1]

FeSe0.81S0.19
###Highly mobile carriers in orthorhombic phases of iron-based superconductors FeSe${}_{1-x}$S${}_{x}$|Y. A. Ovchenkov,D. A. Chareev,V. A. Kulbachinskii,V. G. Kytin,D. E. Presnov,O. S. Volkova,A. N. Vasiliev###
(1462707, 1462711)
 Thebehavior of FeSe0.81S0.19 is well described by the simple twoband model with comparable values of hole and electron mobility.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.095,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.405,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 0.04, ',', 2],[79.0, 0.09, 'and', 2]

In
###Highly mobile carriers in orthorhombic phases of iron-based superconductors FeSe${}_{1-x}$S${}_{x}$|Y. A. Ovchenkov,D. A. Chareev,V. A. Kulbachinskii,V. G. Kytin,D. E. Presnov,O. S. Volkova,A. N. Vasiliev###
(1462749, 1462749)
 In particular,at low temperatures the transverse resistance shows a linear field dependence,the magnetoresistance follow a quadratic field dependence and obeys to Kohlers<missing VAR>rule.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 0.04, ',', 3],[121.0, 0.09, 'and', 3]

In
###Highly mobile carriers in orthorhombic phases of iron-based superconductors FeSe${}_{1-x}$S${}_{x}$|Y. A. Ovchenkov,D. A. Chareev,V. A. Kulbachinskii,V. G. Kytin,D. E. Presnov,O. S. Volkova,A. N. Vasiliev###
(1462806, 1462806)
 In contrast, Kohlers<missing VAR> rule is strongly violated for samples having anorthorhombic low temperature structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[180.0, 0.04, ',', 4],[178.0, 0.09, 'and', 4]

Fe(SeS)
###Highly mobile carriers in orthorhombic phases of iron-based superconductors FeSe${}_{1-x}$S${}_{x}$|Y. A. Ovchenkov,D. A. Chareev,V. A. Kulbachinskii,V. G. Kytin,D. E. Presnov,O. S. Volkova,A. N. Vasiliev###
(1462963, 1462967)
 Therefore, the peculiarity of the low temperaturetransport properties of the orthorhombic Fe(SeS) samples, as probably of manyother orthorhombic iron superconductors, is due to the presence of a smallnumber of highly mobile carriers which originate from the local regions of theFermi surface, presumably, nearby the Van Hove singularity points.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[337.0, 0.04, ',', 6],[335.0, 0.09, 'and', 6]

FIB
###FIB synthesis of Bi2Se3 1D nanowires demonstrating the co-existence of Shubnikov-de Haas oscillations and linear magnetoresistance|Biplab Bhattacharyya,Alka Sharma,V P S Awana,T. D. Senguttuvan,Sudhir Husale###
(1463063, 1463065)
FIB synthesis of Bi2Se3 1D nanowires demonstrating the co-existence of Shubnikov-de Haas oscillations and linear magnetoresistance.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 1, 'D', 0]

Bi2Se3
###FIB synthesis of Bi2Se3 1D nanowires demonstrating the co-existence of Shubnikov-de Haas oscillations and linear magnetoresistance|Biplab Bhattacharyya,Alka Sharma,V P S Awana,T. D. Senguttuvan,Sudhir Husale###
(1463071, 1463074)
FIB synthesis of Bi2Se3 1D nanowires demonstrating the co-existence of Shubnikov-de Haas oscillations and linear magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[1.0, 1, 'D', 0]

I
###FIB synthesis of Bi2Se3 1D nanowires demonstrating the co-existence of Shubnikov-de Haas oscillations and linear magnetoresistance|Biplab Bhattacharyya,Alka Sharma,V P S Awana,T. D. Senguttuvan,Sudhir Husale###
(1463118, 1463118)
 Since the discovery of topological insulators (T<missing VAR>I), there are considerableinterests in demonstrating metallic surface states, their shielded robustnature to the backscattering and study their properties at nanoscale dimensionsby fabricating nanodevices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 1, 'D', 1]

I
###FIB synthesis of Bi2Se3 1D nanowires demonstrating the co-existence of Shubnikov-de Haas oscillations and linear magnetoresistance|Biplab Bhattacharyya,Alka Sharma,V P S Awana,T. D. Senguttuvan,Sudhir Husale###
(1463199, 1463199)
 Here we address an important scientific issuerelated to T<missing VAR>I whether one can clearly demonstrate the robustness of topologicalsurface states (T<missing VAR>SS) to the presence of disorder that does not break anyfundamental symmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 1, 'D', 2]

S
###FIB synthesis of Bi2Se3 1D nanowires demonstrating the co-existence of Shubnikov-de Haas oscillations and linear magnetoresistance|Biplab Bhattacharyya,Alka Sharma,V P S Awana,T. D. Senguttuvan,Sudhir Husale###
(1463227, 1463227)
 Here we address an important scientific issuerelated to T<missing VAR>I whether one can clearly demonstrate the robustness of topologicalsurface states (T<missing VAR>SS) to the presence of disorder that does not break anyfundamental symmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 1, 'D', 2]

FIB
###FIB synthesis of Bi2Se3 1D nanowires demonstrating the co-existence of Shubnikov-de Haas oscillations and linear magnetoresistance|Biplab Bhattacharyya,Alka Sharma,V P S Awana,T. D. Senguttuvan,Sudhir Husale###
(1463266, 1463268)
 The simple straightforward method of FIB milling was usedto synthesize nanowires of Bi2Se3 which we believe an interesting route to testrobustness of T<missing VAR>SS and obtained results are new compared to many of the earlierpapers on quantum transport in T<missing VAR>I demonstrating robustness of metallic SS togallium doping.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[191.0, 1, 'D', 3]

Bi2Se3
###FIB synthesis of Bi2Se3 1D nanowires demonstrating the co-existence of Shubnikov-de Haas oscillations and linear magnetoresistance|Biplab Bhattacharyya,Alka Sharma,V P S Awana,T. D. Senguttuvan,Sudhir Husale###
(1463285, 1463288)
 The simple straightforward method of FIB milling was usedto synthesize nanowires of Bi2Se3 which we believe an interesting route to testrobustness of T<missing VAR>SS and obtained results are new compared to many of the earlierpapers on quantum transport in T<missing VAR>I demonstrating robustness of metallic SS togallium doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[210.0, 1, 'D', 3]

SS
###FIB synthesis of Bi2Se3 1D nanowires demonstrating the co-existence of Shubnikov-de Haas oscillations and linear magnetoresistance|Biplab Bhattacharyya,Alka Sharma,V P S Awana,T. D. Senguttuvan,Sudhir Husale###
(1463312, 1463313)
 The simple straightforward method of FIB milling was usedto synthesize nanowires of Bi2Se3 which we believe an interesting route to testrobustness of T<missing VAR>SS and obtained results are new compared to many of the earlierpapers on quantum transport in T<missing VAR>I demonstrating robustness of metallic SS togallium doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[237.0, 1, 'D', 3]

I
###FIB synthesis of Bi2Se3 1D nanowires demonstrating the co-existence of Shubnikov-de Haas oscillations and linear magnetoresistance|Biplab Bhattacharyya,Alka Sharma,V P S Awana,T. D. Senguttuvan,Sudhir Husale###
(1463349, 1463349)
 The simple straightforward method of FIB milling was usedto synthesize nanowires of Bi2Se3 which we believe an interesting route to testrobustness of T<missing VAR>SS and obtained results are new compared to many of the earlierpapers on quantum transport in T<missing VAR>I demonstrating robustness of metallic SS togallium doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[274.0, 1, 'D', 3]

SS
###FIB synthesis of Bi2Se3 1D nanowires demonstrating the co-existence of Shubnikov-de Haas oscillations and linear magnetoresistance|Biplab Bhattacharyya,Alka Sharma,V P S Awana,T. D. Senguttuvan,Sudhir Husale###
(1463359, 1463360)
 The simple straightforward method of FIB milling was usedto synthesize nanowires of Bi2Se3 which we believe an interesting route to testrobustness of T<missing VAR>SS and obtained results are new compared to many of the earlierpapers on quantum transport in T<missing VAR>I demonstrating robustness of metallic SS togallium doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[284.0, 1, 'D', 3]

In
###FIB synthesis of Bi2Se3 1D nanowires demonstrating the co-existence of Shubnikov-de Haas oscillations and linear magnetoresistance|Biplab Bhattacharyya,Alka Sharma,V P S Awana,T. D. Senguttuvan,Sudhir Husale###
(1463370, 1463370)
 In presence of perpendicular magnetic field, we have observedthe co-existence of Shubnikov de Haas oscillations and linear magnetoresistancewhich was systematically investigated at different channel lengths indicatingthe Dirac dispersive surface states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[295.0, 1, 'D', 4]

SS
###FIB synthesis of Bi2Se3 1D nanowires demonstrating the co-existence of Shubnikov-de Haas oscillations and linear magnetoresistance|Biplab Bhattacharyya,Alka Sharma,V P S Awana,T. D. Senguttuvan,Sudhir Husale###
(1463470, 1463471)
 The transport properties and estimatedphysical parameters shown here demonstrate the robustness of SS to thefabrication tools triggering flexibility to explore new exotic quantumphenomena at nanodevice level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[395.0, 1, 'D', 5]

Pa
###Two-carrier analyses of the transport properties of black phosphorus under pressure|Kazuto Akiba,Atsushi Miyake,Yuichi Akahama,Kazuyuki Matsubayashi,Yoshiya Uwatoko,Masashi Tokunaga###
(1463596, 1463596)
 We report on the electronic transport properties of black phosphorus andanalyze them using a two-carrier model in a wide range of pressure up to 2.5G<missing VAR>Pa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 0.29, 'GPa', 1],[93.0, 1.01, 'GPa', 2]

In
###Two-carrier analyses of the transport properties of black phosphorus under pressure|Kazuto Akiba,Atsushi Miyake,Yuichi Akahama,Kazuyuki Matsubayashi,Yoshiya Uwatoko,Masashi Tokunaga###
(1463599, 1463599)
 In semiconducting state at 0.29 GPa, the remarkable non-linear behavior inthe Hall resistance is reasonably reproduced by assuming the coexistence of twokinds of hole with different densities and mobilities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 0.29, 'GPa', 0],[90.0, 1.01, 'GPa', 1]

In
###Two-carrier analyses of the transport properties of black phosphorus under pressure|Kazuto Akiba,Atsushi Miyake,Yuichi Akahama,Kazuyuki Matsubayashi,Yoshiya Uwatoko,Masashi Tokunaga###
(1463748, 1463748)
 In the semimetallic state, analyses of both the two-carrier modeland quantum oscillations indicate a systematic increase in the carrierdensities as pressure increases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 0.29, 'GPa', 3],[59.0, 1.01, 'GPa', 2]

V
###Two-carrier analyses of the transport properties of black phosphorus under pressure|Kazuto Akiba,Atsushi Miyake,Yuichi Akahama,Kazuyuki Matsubayashi,Yoshiya Uwatoko,Masashi Tokunaga###
(1463847, 1463847)
 An observed sign inversion of Hall resistivityat low magnetic fields suggests the existence of high mobility electrons(sim105 cm2 V-1 s<missing VAR>-1) that is roughly ten times larger than that of holes, inthe semimetallic black phosphorus.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[241.0, 0.29, 'GPa', 4],[158.0, 1.01, 'GPa', 3]

GaAs
###Linear magnetoresistance in a quasi-free two dimensional electron gas in an ultra-high mobility GaAs quantum well|T. Khouri,U. Zeitler,C. Reichl,W. Wegscheider,N. E. Hussey,S. Wiedmann,J. C. Maan###
(1463978, 1463979)
Linear magnetoresistance in a quasi-free two dimensional electron gas in an ultra-high mobility GaAs quantum well.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 6, ',', 1],[40.0, 2, ',', 1],[43.0, -1, ',', 1],[66.0, 33, 'T', 1],[112.0, 0.3, 'K', 2],[115.0, 60, 'K', 2]

V
###Linear magnetoresistance in a quasi-free two dimensional electron gas in an ultra-high mobility GaAs quantum well|T. Khouri,U. Zeitler,C. Reichl,W. Wegscheider,N. E. Hussey,S. Wiedmann,J. C. Maan###
(1464021, 1464021)
 We report a magnetotransport study of an ultra-high mobility(barmuapprox 25times 106,cm2,V-1,s<missing VAR>-1) n<missing VAR>-type GaAsquantum well up to 33 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 6, ',', 0],[2.0, 2, ',', 0],[1.0, -1, ',', 0],[24.0, 33, 'T', 0],[70.0, 0.3, 'K', 1],[73.0, 60, 'K', 1]

GaAs
###Linear magnetoresistance in a quasi-free two dimensional electron gas in an ultra-high mobility GaAs quantum well|T. Khouri,U. Zeitler,C. Reichl,W. Wegscheider,N. E. Hussey,S. Wiedmann,J. C. Maan###
(1464034, 1464035)
 We report a magnetotransport study of an ultra-high mobility(barmuapprox 25times 106,cm2,V-1,s<missing VAR>-1) n<missing VAR>-type GaAsquantum well up to 33 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 6, ',', 0],[15.0, 2, ',', 0],[12.0, -1, ',', 0],[10.0, 33, 'T', 0],[56.0, 0.3, 'K', 1],[59.0, 60, 'K', 1]

At
###Linear magnetoresistance in a quasi-free two dimensional electron gas in an ultra-high mobility GaAs quantum well|T. Khouri,U. Zeitler,C. Reichl,W. Wegscheider,N. E. Hussey,S. Wiedmann,J. C. Maan###
(1464161, 1464161)
 At low temperature, quantum oscillations are superimposedonto the LMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 6, ',', 3],[142.0, 2, ',', 3],[139.0, -1, ',', 3],[116.0, 33, 'T', 3],[70.0, 0.3, 'K', 2],[67.0, 60, 'K', 2]

Tc
###High-Tc superconductivity in FeSe at high pressure: Dominant hole carriers and enhanced spin fluctuations|J. P. Sun,G. Z. Ye,P. Shahi,J. -Q. Yan,K. Matsuura,H. Kontani,G. M. Zhang,Q. Zhou,B. C. Sales,T. Shibauchi,Y. Uwatoko,D. J. Singh,J. -G. Cheng###
(1464372, 1464372)
High-Tc superconductivity in FeSe at high pressure Dominant hole carriers and enhanced spin fluctuations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeSe
###High-Tc superconductivity in FeSe at high pressure: Dominant hole carriers and enhanced spin fluctuations|J. P. Sun,G. Z. Ye,P. Shahi,J. -Q. Yan,K. Matsuura,H. Kontani,G. M. Zhang,Q. Zhou,B. C. Sales,T. Shibauchi,Y. Uwatoko,D. J. Singh,J. -G. Cheng###
(1464378, 1464379)
High-Tc superconductivity in FeSe at high pressure Dominant hole carriers and enhanced spin fluctuations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(Tc)
###High-Tc superconductivity in FeSe at high pressure: Dominant hole carriers and enhanced spin fluctuations|J. P. Sun,G. Z. Ye,P. Shahi,J. -Q. Yan,K. Matsuura,H. Kontani,G. M. Zhang,Q. Zhou,B. C. Sales,T. Shibauchi,Y. Uwatoko,D. J. Singh,J. -G. Cheng###
(1464439, 1464441)
 The importance of electron-hole interband interactions is widely acknowledgedfor iron-pnictide superconductors with high transition temperatures (Tc).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###High-Tc superconductivity in FeSe at high pressure: Dominant hole carriers and enhanced spin fluctuations|J. P. Sun,G. Z. Ye,P. Shahi,J. -Q. Yan,K. Matsuura,H. Kontani,G. M. Zhang,Q. Zhou,B. C. Sales,T. Shibauchi,Y. Uwatoko,D. J. Singh,J. -G. Cheng###
(1464450, 1464450)
However, high-Tc superconductivity without hole carriers has been suggested inFeSe single-layer films and intercalated iron-selenides, raising a fundamentalquestion whether iron pnictides and chalcogenides have different pairingmechanisms.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeSe
###High-Tc superconductivity in FeSe at high pressure: Dominant hole carriers and enhanced spin fluctuations|J. P. Sun,G. Z. Ye,P. Shahi,J. -Q. Yan,K. Matsuura,H. Kontani,G. M. Zhang,Q. Zhou,B. C. Sales,T. Shibauchi,Y. Uwatoko,D. J. Singh,J. -G. Cheng###
(1464469, 1464470)
However, high-Tc superconductivity without hole carriers has been suggested inFeSe single-layer films and intercalated iron-selenides, raising a fundamentalquestion whether iron pnictides and chalcogenides have different pairingmechanisms.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###High-Tc superconductivity in FeSe at high pressure: Dominant hole carriers and enhanced spin fluctuations|J. P. Sun,G. Z. Ye,P. Shahi,J. -Q. Yan,K. Matsuura,H. Kontani,G. M. Zhang,Q. Zhou,B. C. Sales,T. Shibauchi,Y. Uwatoko,D. J. Singh,J. -G. Cheng###
(1464540, 1464540)
 Here, we study the properties of electronic structure in thehigh-Tc phase induced by pressure in bulk FeSe from magneto-transportmeasurements and first-principles calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeSe
###High-Tc superconductivity in FeSe at high pressure: Dominant hole carriers and enhanced spin fluctuations|J. P. Sun,G. Z. Ye,P. Shahi,J. -Q. Yan,K. Matsuura,H. Kontani,G. M. Zhang,Q. Zhou,B. C. Sales,T. Shibauchi,Y. Uwatoko,D. J. Singh,J. -G. Cheng###
(1464554, 1464555)
 Here, we study the properties of electronic structure in thehigh-Tc phase induced by pressure in bulk FeSe from magneto-transportmeasurements and first-principles calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###High-Tc superconductivity in FeSe at high pressure: Dominant hole carriers and enhanced spin fluctuations|J. P. Sun,G. Z. Ye,P. Shahi,J. -Q. Yan,K. Matsuura,H. Kontani,G. M. Zhang,Q. Zhou,B. C. Sales,T. Shibauchi,Y. Uwatoko,D. J. Singh,J. -G. Cheng###
(1464587, 1464587)
 With increasing pressure, thelow-Tc superconducting phase transforms into high-Tc phase, where we find thenormal-state Hall resistivity changes sign from negative to positive,demonstrating dominant hole carriers in striking contrast to other FeSe-derivedhigh-Tc systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###High-Tc superconductivity in FeSe at high pressure: Dominant hole carriers and enhanced spin fluctuations|J. P. Sun,G. Z. Ye,P. Shahi,J. -Q. Yan,K. Matsuura,H. Kontani,G. M. Zhang,Q. Zhou,B. C. Sales,T. Shibauchi,Y. Uwatoko,D. J. Singh,J. -G. Cheng###
(1464599, 1464599)
 With increasing pressure, thelow-Tc superconducting phase transforms into high-Tc phase, where we find thenormal-state Hall resistivity changes sign from negative to positive,demonstrating dominant hole carriers in striking contrast to other FeSe-derivedhigh-Tc systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeSe
###High-Tc superconductivity in FeSe at high pressure: Dominant hole carriers and enhanced spin fluctuations|J. P. Sun,G. Z. Ye,P. Shahi,J. -Q. Yan,K. Matsuura,H. Kontani,G. M. Zhang,Q. Zhou,B. C. Sales,T. Shibauchi,Y. Uwatoko,D. J. Singh,J. -G. Cheng###
(1464653, 1464654)
 With increasing pressure, thelow-Tc superconducting phase transforms into high-Tc phase, where we find thenormal-state Hall resistivity changes sign from negative to positive,demonstrating dominant hole carriers in striking contrast to other FeSe-derivedhigh-Tc systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###High-Tc superconductivity in FeSe at high pressure: Dominant hole carriers and enhanced spin fluctuations|J. P. Sun,G. Z. Ye,P. Shahi,J. -Q. Yan,K. Matsuura,H. Kontani,G. M. Zhang,Q. Zhou,B. C. Sales,T. Shibauchi,Y. Uwatoko,D. J. Singh,J. -G. Cheng###
(1464661, 1464661)
 With increasing pressure, thelow-Tc superconducting phase transforms into high-Tc phase, where we find thenormal-state Hall resistivity changes sign from negative to positive,demonstrating dominant hole carriers in striking contrast to other FeSe-derivedhigh-Tc systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###High-Tc superconductivity in FeSe at high pressure: Dominant hole carriers and enhanced spin fluctuations|J. P. Sun,G. Z. Ye,P. Shahi,J. -Q. Yan,K. Matsuura,H. Kontani,G. M. Zhang,Q. Zhou,B. C. Sales,T. Shibauchi,Y. Uwatoko,D. J. Singh,J. -G. Cheng###
(1464716, 1464716)
 Moreover, the Hall coefficient is remarkably enlarged and themagnetoresistance exhibits anomalous scaling behaviors, evidencing stronglyenhanced interband spin fluctuations in the high-Tc phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeSe
###High-Tc superconductivity in FeSe at high pressure: Dominant hole carriers and enhanced spin fluctuations|J. P. Sun,G. Z. Ye,P. Shahi,J. -Q. Yan,K. Matsuura,H. Kontani,G. M. Zhang,Q. Zhou,B. C. Sales,T. Shibauchi,Y. Uwatoko,D. J. Singh,J. -G. Cheng###
(1464728, 1464729)
 These results inFeSe highlight similarities with high-Tc phases of iron pnictides, constitutinga step toward a unified understanding of iron-based superconductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###High-Tc superconductivity in FeSe at high pressure: Dominant hole carriers and enhanced spin fluctuations|J. P. Sun,G. Z. Ye,P. Shahi,J. -Q. Yan,K. Matsuura,H. Kontani,G. M. Zhang,Q. Zhou,B. C. Sales,T. Shibauchi,Y. Uwatoko,D. J. Singh,J. -G. Cheng###
(1464739, 1464739)
 These results inFeSe highlight similarities with high-Tc phases of iron pnictides, constitutinga step toward a unified understanding of iron-based superconductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TaS2-x
###Orbital-driven Mottness collapse in 1T-TaS2-xSex transition metal dichalcogenide|Shuang Qiao,Xintong Li,Naizhou Wang,Wei Ruan,Cun Ye,Peng Cai,Zhenqi Hao,Hong Yao,Xianhui Chen,Jian Wu,Yayu Wang,Zheng Liu###
(1464793, 1464797)
Orbital-driven Mottness collapse in 1T-TaS2-xSex transition metal dichalcogenide.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[2.0, 1, 'T', 0],[80.0, 1, 'T', 2],[157.0, 1, 'T', 3],[287.0, 1, 'T', 5]

Tc
###Orbital-driven Mottness collapse in 1T-TaS2-xSex transition metal dichalcogenide|Shuang Qiao,Xintong Li,Naizhou Wang,Wei Ruan,Cun Ye,Peng Cai,Zhenqi Hao,Hong Yao,Xianhui Chen,Jian Wu,Yayu Wang,Zheng Liu###
(1464853, 1464853)
 The vicinity of a Mott insulating phase has constantly been a fertile groundfor finding exotic quantum states, most notably the high Tc cuprates andcolossal magnetoresistance manganites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 1, 'T', 1],[24.0, 1, 'T', 1],[101.0, 1, 'T', 2],[231.0, 1, 'T', 4]

TaS2
###Orbital-driven Mottness collapse in 1T-TaS2-xSex transition metal dichalcogenide|Shuang Qiao,Xintong Li,Naizhou Wang,Wei Ruan,Cun Ye,Peng Cai,Zhenqi Hao,Hong Yao,Xianhui Chen,Jian Wu,Yayu Wang,Zheng Liu###
(1464879, 1464881)
 The layered transition metaldichalcogenide 1T-TaS2 represents another intriguing example, in which the Mottinsulator phase is intimately entangled with a series of complexcharge-density-wave (CD<missing VAR>W) orders.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 1, 'T', 2],[2.0, 1, 'T', 0],[73.0, 1, 'T', 1],[203.0, 1, 'T', 3]

C
###Orbital-driven Mottness collapse in 1T-TaS2-xSex transition metal dichalcogenide|Shuang Qiao,Xintong Li,Naizhou Wang,Wei Ruan,Cun Ye,Peng Cai,Zhenqi Hao,Hong Yao,Xianhui Chen,Jian Wu,Yayu Wang,Zheng Liu###
(1464929, 1464929)
 The layered transition metaldichalcogenide 1T-TaS2 represents another intriguing example, in which the Mottinsulator phase is intimately entangled with a series of complexcharge-density-wave (CD<missing VAR>W) orders.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 1, 'T', 2],[52.0, 1, 'T', 0],[25.0, 1, 'T', 1],[155.0, 1, 'T', 3]

W
###Orbital-driven Mottness collapse in 1T-TaS2-xSex transition metal dichalcogenide|Shuang Qiao,Xintong Li,Naizhou Wang,Wei Ruan,Cun Ye,Peng Cai,Zhenqi Hao,Hong Yao,Xianhui Chen,Jian Wu,Yayu Wang,Zheng Liu###
(1464931, 1464931)
 The layered transition metaldichalcogenide 1T-TaS2 represents another intriguing example, in which the Mottinsulator phase is intimately entangled with a series of complexcharge-density-wave (CD<missing VAR>W) orders.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 1, 'T', 2],[54.0, 1, 'T', 0],[23.0, 1, 'T', 1],[153.0, 1, 'T', 3]

TaS2
###Orbital-driven Mottness collapse in 1T-TaS2-xSex transition metal dichalcogenide|Shuang Qiao,Xintong Li,Naizhou Wang,Wei Ruan,Cun Ye,Peng Cai,Zhenqi Hao,Hong Yao,Xianhui Chen,Jian Wu,Yayu Wang,Zheng Liu###
(1464956, 1464958)
 More interestingly, it has been recentlyfound that 1T-TaS2 undergoes a Mott-insulator-to-superconductor transitioninduced by high pressure, charge doping, or isovalent substitution.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 1, 'T', 3],[79.0, 1, 'T', 1],[2.0, 1, 'T', 0],[126.0, 1, 'T', 2]

S
###Orbital-driven Mottness collapse in 1T-TaS2-xSex transition metal dichalcogenide|Shuang Qiao,Xintong Li,Naizhou Wang,Wei Ruan,Cun Ye,Peng Cai,Zhenqi Hao,Hong Yao,Xianhui Chen,Jian Wu,Yayu Wang,Zheng Liu###
(1465052, 1465052)
 Here, by combining scanning tunneling microscopy(STM) measurements and first-principles calculations, we investigate the atomicscale electronic structure of 1T-TaS2 Mott insulator and its evolution to themetallic state upon isovalent substitution of S with Se.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[261.0, 1, 'T', 5],[175.0, 1, 'T', 3],[98.0, 1, 'T', 2],[32.0, 1, 'T', 0]

TaS2
###Orbital-driven Mottness collapse in 1T-TaS2-xSex transition metal dichalcogenide|Shuang Qiao,Xintong Li,Naizhou Wang,Wei Ruan,Cun Ye,Peng Cai,Zhenqi Hao,Hong Yao,Xianhui Chen,Jian Wu,Yayu Wang,Zheng Liu###
(1465086, 1465088)
 Here, by combining scanning tunneling microscopy(STM) measurements and first-principles calculations, we investigate the atomicscale electronic structure of 1T-TaS2 Mott insulator and its evolution to themetallic state upon isovalent substitution of S with Se.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[295.0, 1, 'T', 5],[209.0, 1, 'T', 3],[132.0, 1, 'T', 2],[2.0, 1, 'T', 0]

S
###Orbital-driven Mottness collapse in 1T-TaS2-xSex transition metal dichalcogenide|Shuang Qiao,Xintong Li,Naizhou Wang,Wei Ruan,Cun Ye,Peng Cai,Zhenqi Hao,Hong Yao,Xianhui Chen,Jian Wu,Yayu Wang,Zheng Liu###
(1465117, 1465117)
 Here, by combining scanning tunneling microscopy(STM) measurements and first-principles calculations, we investigate the atomicscale electronic structure of 1T-TaS2 Mott insulator and its evolution to themetallic state upon isovalent substitution of S with Se.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[326.0, 1, 'T', 5],[240.0, 1, 'T', 3],[163.0, 1, 'T', 2],[33.0, 1, 'T', 0]

Se
###Orbital-driven Mottness collapse in 1T-TaS2-xSex transition metal dichalcogenide|Shuang Qiao,Xintong Li,Naizhou Wang,Wei Ruan,Cun Ye,Peng Cai,Zhenqi Hao,Hong Yao,Xianhui Chen,Jian Wu,Yayu Wang,Zheng Liu###
(1465121, 1465121)
 Here, by combining scanning tunneling microscopy(STM) measurements and first-principles calculations, we investigate the atomicscale electronic structure of 1T-TaS2 Mott insulator and its evolution to themetallic state upon isovalent substitution of S with Se.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[330.0, 1, 'T', 5],[244.0, 1, 'T', 3],[167.0, 1, 'T', 2],[37.0, 1, 'T', 0]

S
###Orbital-driven Mottness collapse in 1T-TaS2-xSex transition metal dichalcogenide|Shuang Qiao,Xintong Li,Naizhou Wang,Wei Ruan,Cun Ye,Peng Cai,Zhenqi Hao,Hong Yao,Xianhui Chen,Jian Wu,Yayu Wang,Zheng Liu###
(1465220, 1465220)
 Especially, we show that the continuous evolution ofthe charge gap visualized by STM is due to the immersion of thelocalized-orbital-induced Hubbard bands into the extended-orbital-spanned Fermisea, featuring a unique evolution from a Mott gap to a charge-transfer gap.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[429.0, 1, 'T', 7],[343.0, 1, 'T', 5],[266.0, 1, 'T', 4],[136.0, 1, 'T', 2]

Ni/Cu
###Intra-wire coupling in segmented Ni/Cu nanowires deposited by electrodeposition|Philip Sergelius,Ji Lee,Olivier Fruchart,Mohamed Salem,Sebastian Allende,Robert Escobar,Johannes Gooth,Robert Zierold,Jean-Christophe Toussaint,Sebastian Schneider,Darius Pohl,Bernd Rellinghaus,Sylvain Martin,Javier Garcia,Heiko Reith,Anne Spende,Maria Toimil-Molares,Dora Altbir,Russel Cowburn,Detlef Görlitz,Kornelius Nielsch###
(1465362, 1465364)
Intra-wire coupling in segmented Ni/Cu nanowires deposited by electrodeposition.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[159.0, 45, 'nm', 3],[206.0, 2.0, 'Our', 4]

In
###Intra-wire coupling in segmented Ni/Cu nanowires deposited by electrodeposition|Philip Sergelius,Ji Lee,Olivier Fruchart,Mohamed Salem,Sebastian Allende,Robert Escobar,Johannes Gooth,Robert Zierold,Jean-Christophe Toussaint,Sebastian Schneider,Darius Pohl,Bernd Rellinghaus,Sylvain Martin,Javier Garcia,Heiko Reith,Anne Spende,Maria Toimil-Molares,Dora Altbir,Russel Cowburn,Detlef Görlitz,Kornelius Nielsch###
(1465446, 1465446)
 In our study, we investigate electrodeposited nanomagnets within hosttemplates using vibrating sample magnetometry and observe a strong dependencebetween nanowire length and coercive field (25 nm to 5 mum) and diameter (25nm to 45 nm).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 45, 'nm', 0],[124.0, 2.0, 'Our', 1]

H
###Tensile Strained Gray Tin: a New Dirac Semimetal for Observing Negative Magnetoresistance with Shubnikov-de-Haas Oscillation|Huaqing Huang,Feng Liu###
(1465887, 1465887)
 Here, we propose that gray tin is a perfect candidate forobserving the chiral anomaly effect and Shubnikov-de-Haas (SdH) oscillation atrelatively low magnetic field.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Tensile Strained Gray Tin: a New Dirac Semimetal for Observing Negative Magnetoresistance with Shubnikov-de-Haas Oscillation|Huaqing Huang,Feng Liu###
(1465982, 1465982)
 In this newly found Diracsemimetal state, two Dirac points which are tunable by tensile [001] strains,lie in the kz axis and Fermi arcs appear in the (100) surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Tensile Strained Gray Tin: a New Dirac Semimetal for Observing Negative Magnetoresistance with Shubnikov-de-Haas Oscillation|Huaqing Huang,Feng Liu###
(1466098, 1466098)
 Duo the lowcarrier concentration and high mobility of gray tin, a large chiral anomalyinduced negative magnetoresistance and a strong SdH oscillation are anticipatedin this half of strain spectrum.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2-x
###Large phase relaxation length in the topological surface states of epitaxial Bi2-xSnxTe3 thin films|Seong Won Cho,Kwang-Chon Kim,Seong Keun Kim,Byung-ki Cheong,Jin-Sang Kim,Suyoun Lee###
(1466264, 1466267)
Large phase relaxation length in the topological surface states of epitaxial Bi2-xSnxTe3 thin films.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[256.0, 1.8, 'K', 4]

Te3
###Large phase relaxation length in the topological surface states of epitaxial Bi2-xSnxTe3 thin films|Seong Won Cho,Kwang-Chon Kim,Seong Keun Kim,Byung-ki Cheong,Jin-Sang Kim,Suyoun Lee###
(1466269, 1466270)
Large phase relaxation length in the topological surface states of epitaxial Bi2-xSnxTe3 thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[253.0, 1.8, 'K', 4]

I
###Large phase relaxation length in the topological surface states of epitaxial Bi2-xSnxTe3 thin films|Seong Won Cho,Kwang-Chon Kim,Seong Keun Kim,Byung-ki Cheong,Jin-Sang Kim,Suyoun Lee###
(1466285, 1466285)
 A topological insulator (T<missing VAR>I), a new quantum state featured with thetopologically-protected surface state (T<missing VAR>SS) originating from its peculiartopology in band structure, has attracted much interest due to academic andpractical importance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[238.0, 1.8, 'K', 3]

S
###Large phase relaxation length in the topological surface states of epitaxial Bi2-xSnxTe3 thin films|Seong Won Cho,Kwang-Chon Kim,Seong Keun Kim,Byung-ki Cheong,Jin-Sang Kim,Suyoun Lee###
(1466315, 1466315)
 A topological insulator (T<missing VAR>I), a new quantum state featured with thetopologically-protected surface state (T<missing VAR>SS) originating from its peculiartopology in band structure, has attracted much interest due to academic andpractical importance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[208.0, 1.8, 'K', 3]

Bi2-x
###Large phase relaxation length in the topological surface states of epitaxial Bi2-xSnxTe3 thin films|Seong Won Cho,Kwang-Chon Kim,Seong Keun Kim,Byung-ki Cheong,Jin-Sang Kim,Suyoun Lee###
(1466453, 1466456)
 To resolvethis problem, we have investigated the transport properties of epitaxialBi2-xSnxTe3 thin films with varying x<missing VAR>.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[67.0, 1.8, 'K', 1]

Te3
###Large phase relaxation length in the topological surface states of epitaxial Bi2-xSnxTe3 thin films|Seong Won Cho,Kwang-Chon Kim,Seong Keun Kim,Byung-ki Cheong,Jin-Sang Kim,Suyoun Lee###
(1466458, 1466459)
 To resolvethis problem, we have investigated the transport properties of epitaxialBi2-xSnxTe3 thin films with varying x<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 1.8, 'K', 1]

SS
###Large phase relaxation length in the topological surface states of epitaxial Bi2-xSnxTe3 thin films|Seong Won Cho,Kwang-Chon Kim,Seong Keun Kim,Byung-ki Cheong,Jin-Sang Kim,Suyoun Lee###
(1466491, 1466492)
 With the bulk conduction being stronglysuppressed, the T<missing VAR>SS is separately characterized, resulting in a large phaserelaxation length of 250 nm at 1.8 K, a record-high value in T<missing VAR>Is.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 1.8, 'K', 0]

In
###Large phase relaxation length in the topological surface states of epitaxial Bi2-xSnxTe3 thin films|Seong Won Cho,Kwang-Chon Kim,Seong Keun Kim,Byung-ki Cheong,Jin-Sang Kim,Suyoun Lee###
(1466540, 1466540)
 In addition,the magnetoresistance ratio (MR) has shown a non-monotonic temperaturedependence with a maximum value at an elevated temperature depending on x<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 1.8, 'K', 1]

NbAs
###Negative Magnetoresistance in Weyl semimetals NbAs and NbP: Intrinsic Chiral Anomaly and Extrinsic Effects|Yupeng Li,Zhen Wang,Pengshan Li,Xiaojun Yang,Zhixuan Shen,Feng Sheng,Xiaodong Li,Yunhao Lu,Yi Zheng,Zhu-An Xu###
(1466685, 1466686)
Negative Magnetoresistance in Weyl semimetals NbAs and NbP Intrinsic Chiral Anomaly and Extrinsic Effects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbP
###Negative Magnetoresistance in Weyl semimetals NbAs and NbP: Intrinsic Chiral Anomaly and Extrinsic Effects|Yupeng Li,Zhen Wang,Pengshan Li,Xiaojun Yang,Zhixuan Shen,Feng Sheng,Xiaodong Li,Yunhao Lu,Yi Zheng,Zhu-An Xu###
(1466690, 1466691)
Negative Magnetoresistance in Weyl semimetals NbAs and NbP Intrinsic Chiral Anomaly and Extrinsic Effects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Negative Magnetoresistance in Weyl semimetals NbAs and NbP: Intrinsic Chiral Anomaly and Extrinsic Effects|Yupeng Li,Zhen Wang,Pengshan Li,Xiaojun Yang,Zhixuan Shen,Feng Sheng,Xiaodong Li,Yunhao Lu,Yi Zheng,Zhu-An Xu###
(1466717, 1466717)
 Chiral anomaly induced negative magnetoresistance (NMR) has been widely usedas a critical transport evidence on the existence of Weyl fermions intopological semimetals.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Negative Magnetoresistance in Weyl semimetals NbAs and NbP: Intrinsic Chiral Anomaly and Extrinsic Effects|Yupeng Li,Zhen Wang,Pengshan Li,Xiaojun Yang,Zhixuan Shen,Feng Sheng,Xiaodong Li,Yunhao Lu,Yi Zheng,Zhu-An Xu###
(1466761, 1466761)
 In this mini review, we discuss the general observationof the NMR phenomena in non-centrosymmetric NbP and NbAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Negative Magnetoresistance in Weyl semimetals NbAs and NbP: Intrinsic Chiral Anomaly and Extrinsic Effects|Yupeng Li,Zhen Wang,Pengshan Li,Xiaojun Yang,Zhixuan Shen,Feng Sheng,Xiaodong Li,Yunhao Lu,Yi Zheng,Zhu-An Xu###
(1466785, 1466785)
 In this mini review, we discuss the general observationof the NMR phenomena in non-centrosymmetric NbP and NbAs.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbP
###Negative Magnetoresistance in Weyl semimetals NbAs and NbP: Intrinsic Chiral Anomaly and Extrinsic Effects|Yupeng Li,Zhen Wang,Pengshan Li,Xiaojun Yang,Zhixuan Shen,Feng Sheng,Xiaodong Li,Yunhao Lu,Yi Zheng,Zhu-An Xu###
(1466797, 1466798)
 In this mini review, we discuss the general observationof the NMR phenomena in non-centrosymmetric NbP and NbAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbAs
###Negative Magnetoresistance in Weyl semimetals NbAs and NbP: Intrinsic Chiral Anomaly and Extrinsic Effects|Yupeng Li,Zhen Wang,Pengshan Li,Xiaojun Yang,Zhixuan Shen,Feng Sheng,Xiaodong Li,Yunhao Lu,Yi Zheng,Zhu-An Xu###
(1466802, 1466803)
 In this mini review, we discuss the general observationof the NMR phenomena in non-centrosymmetric NbP and NbAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Negative Magnetoresistance in Weyl semimetals NbAs and NbP: Intrinsic Chiral Anomaly and Extrinsic Effects|Yupeng Li,Zhen Wang,Pengshan Li,Xiaojun Yang,Zhixuan Shen,Feng Sheng,Xiaodong Li,Yunhao Lu,Yi Zheng,Zhu-An Xu###
(1466812, 1466812)
 We show that NMR canbe contributed by intrinsic chiral anomaly of Weyl fermions and/or extrinsiceffects, such as superimposition of Hall signals, field-dependent inhomogeneouscurrent flow in the bulk, i.e.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Negative Magnetoresistance in Weyl semimetals NbAs and NbP: Intrinsic Chiral Anomaly and Extrinsic Effects|Yupeng Li,Zhen Wang,Pengshan Li,Xiaojun Yang,Zhixuan Shen,Feng Sheng,Xiaodong Li,Yunhao Lu,Yi Zheng,Zhu-An Xu###
(1466895, 1466895)
 current jetting, and weak localization (WL) ofcoexistent trivial carriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Negative Magnetoresistance in Weyl semimetals NbAs and NbP: Intrinsic Chiral Anomaly and Extrinsic Effects|Yupeng Li,Zhen Wang,Pengshan Li,Xiaojun Yang,Zhixuan Shen,Feng Sheng,Xiaodong Li,Yunhao Lu,Yi Zheng,Zhu-An Xu###
(1466911, 1466911)
 Such WL<missing VAR> controlled NMR is heavily dependent onsample quality, and is characterized by pronounced crossover from positive tonegative MR growth at elevated temperatures, as a result of the competitionbetween the phase coherence time and the spin-orbital scattering constant ofthe bulk trivial pockets.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Negative Magnetoresistance in Weyl semimetals NbAs and NbP: Intrinsic Chiral Anomaly and Extrinsic Effects|Yupeng Li,Zhen Wang,Pengshan Li,Xiaojun Yang,Zhixuan Shen,Feng Sheng,Xiaodong Li,Yunhao Lu,Yi Zheng,Zhu-An Xu###
(1466916, 1466916)
 Such WL<missing VAR> controlled NMR is heavily dependent onsample quality, and is characterized by pronounced crossover from positive tonegative MR growth at elevated temperatures, as a result of the competitionbetween the phase coherence time and the spin-orbital scattering constant ofthe bulk trivial pockets.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Negative Magnetoresistance in Weyl semimetals NbAs and NbP: Intrinsic Chiral Anomaly and Extrinsic Effects|Yupeng Li,Zhen Wang,Pengshan Li,Xiaojun Yang,Zhixuan Shen,Feng Sheng,Xiaodong Li,Yunhao Lu,Yi Zheng,Zhu-An Xu###
(1467023, 1467023)
 Thus, the correlation of NMR and chiral anomaly needsto be scrutinized, without the support of other complimentary techniques.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Negative Magnetoresistance in Weyl semimetals NbAs and NbP: Intrinsic Chiral Anomaly and Extrinsic Effects|Yupeng Li,Zhen Wang,Pengshan Li,Xiaojun Yang,Zhixuan Shen,Feng Sheng,Xiaodong Li,Yunhao Lu,Yi Zheng,Zhu-An Xu###
(1467211, 1467211)
 Chemical doping of magnetic and non-magnetic impuritiesare thus more convincing in probing the existence of Weyl fermions than the NMRmethod.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pr4Fe2As2Te1-xO4
###Magnetotransport studies of Superconducting Pr$_4$Fe$_2$As$_2$Te$_{1-x}$O$_4$|A. Pisoni,P. Szirmai,S. Katrych,B. Náfrádi,R. Gaál,J. Karpinski,L. Forró###
(1467235, 1467246)
Magnetotransport studies of Superconducting Pr4Fe2As2Te1-xO4.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[178.0, 16, 'T', 4],[208.0, 2, 'GPa', 5]

Pr4Fe2As2Te1-xO4
###Magnetotransport studies of Superconducting Pr$_4$Fe$_2$As$_2$Te$_{1-x}$O$_4$|A. Pisoni,P. Szirmai,S. Katrych,B. Náfrádi,R. Gaál,J. Karpinski,L. Forró###
(1467278, 1467289)
 We report a detailed study of the electrical transport properties of singlecrystals of Pr4Fe2As2Te1-xO4, a recently discovered iron-basedsuperconductor.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[135.0, 16, 'T', 3],[165.0, 2, 'GPa', 4]

Pr4Fe2As2Te1-xO4
###Magnetotransport studies of Superconducting Pr$_4$Fe$_2$As$_2$Te$_{1-x}$O$_4$|A. Pisoni,P. Szirmai,S. Katrych,B. Náfrádi,R. Gaál,J. Karpinski,L. Forró###
(1467509, 1467520)
 A simple two-band model is used to describethe transport and magnetic properties of Pr4Fe2As2Te1-xO4.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[85.0, 16, 'T', 2],[55.0, 2, 'GPa', 1]

S
###Pure spin current transport in gallium doped zinc oxide|Matthias Althammer,Joynarayan Mukherjee,Stephan Geprägs,Sebastian T. B. Goennenwein,Matthias Opel,M. S. Ramachandra Rao,Rudolf Gross###
(1467650, 1467650)
 We study the flow of a pure spin current through zinc oxide by measuring thespin Hall magnetoresistance (SMR) in thin film trilayer samples consisting ofbismuth-substituted yttrium iron garnet (BiYIG), gallium-doped zinc oxide(GaZnO), and platinum.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[193.0, 12, ';', 3]

BiYI
###Pure spin current transport in gallium doped zinc oxide|Matthias Althammer,Joynarayan Mukherjee,Stephan Geprägs,Sebastian T. B. Goennenwein,Matthias Opel,M. S. Ramachandra Rao,Rudolf Gross###
(1467681, 1467683)
 We study the flow of a pure spin current through zinc oxide by measuring thespin Hall magnetoresistance (SMR) in thin film trilayer samples consisting ofbismuth-substituted yttrium iron garnet (BiYIG), gallium-doped zinc oxide(GaZnO), and platinum.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 12, ';', 3]

(GaZnO)
###Pure spin current transport in gallium doped zinc oxide|Matthias Althammer,Joynarayan Mukherjee,Stephan Geprägs,Sebastian T. B. Goennenwein,Matthias Opel,M. S. Ramachandra Rao,Rudolf Gross###
(1467697, 1467701)
 We study the flow of a pure spin current through zinc oxide by measuring thespin Hall magnetoresistance (SMR) in thin film trilayer samples consisting ofbismuth-substituted yttrium iron garnet (BiYIG), gallium-doped zinc oxide(GaZnO), and platinum.
Featurization successful!
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 12, ';', 3]

S
###Pure spin current transport in gallium doped zinc oxide|Matthias Althammer,Joynarayan Mukherjee,Stephan Geprägs,Sebastian T. B. Goennenwein,Matthias Opel,M. S. Ramachandra Rao,Rudolf Gross###
(1467721, 1467721)
 We investigate the dependence of the SMR magnitude onthe thickness of the GaZnO interlayer and compare to a BiYIG<missing VAR>/Pt bilayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 12, ';', 2]

GaZnO
###Pure spin current transport in gallium doped zinc oxide|Matthias Althammer,Joynarayan Mukherjee,Stephan Geprägs,Sebastian T. B. Goennenwein,Matthias Opel,M. S. Ramachandra Rao,Rudolf Gross###
(1467738, 1467740)
 We investigate the dependence of the SMR magnitude onthe thickness of the GaZnO interlayer and compare to a BiYIG<missing VAR>/Pt bilayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 12, ';', 2]

BiYI
###Pure spin current transport in gallium doped zinc oxide|Matthias Althammer,Joynarayan Mukherjee,Stephan Geprägs,Sebastian T. B. Goennenwein,Matthias Opel,M. S. Ramachandra Rao,Rudolf Gross###
(1467752, 1467754)
 We investigate the dependence of the SMR magnitude onthe thickness of the GaZnO interlayer and compare to a BiYIG<missing VAR>/Pt bilayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 12, ';', 2]

Pt
###Pure spin current transport in gallium doped zinc oxide|Matthias Althammer,Joynarayan Mukherjee,Stephan Geprägs,Sebastian T. B. Goennenwein,Matthias Opel,M. S. Ramachandra Rao,Rudolf Gross###
(1467757, 1467757)
 We investigate the dependence of the SMR magnitude onthe thickness of the GaZnO interlayer and compare to a BiYIG<missing VAR>/Pt bilayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 12, ';', 2]

S
###Pure spin current transport in gallium doped zinc oxide|Matthias Althammer,Joynarayan Mukherjee,Stephan Geprägs,Sebastian T. B. Goennenwein,Matthias Opel,M. S. Ramachandra Rao,Rudolf Gross###
(1467771, 1467771)
 Wefind that the SMR magnitude is reduced by almost one order of magnitude uponinserting a GaZnO interlayer, and continuously decreases with increasinginterlayer thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 12, ';', 1]

GaZnO
###Pure spin current transport in gallium doped zinc oxide|Matthias Althammer,Joynarayan Mukherjee,Stephan Geprägs,Sebastian T. B. Goennenwein,Matthias Opel,M. S. Ramachandra Rao,Rudolf Gross###
(1467800, 1467802)
 Wefind that the SMR magnitude is reduced by almost one order of magnitude uponinserting a GaZnO interlayer, and continuously decreases with increasinginterlayer thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 12, ';', 1]

S
###Pure spin current transport in gallium doped zinc oxide|Matthias Althammer,Joynarayan Mukherjee,Stephan Geprägs,Sebastian T. B. Goennenwein,Matthias Opel,M. S. Ramachandra Rao,Rudolf Gross###
(1467828, 1467828)
 Nevertheless, the SMR stays finite even for a12;mathrmnm thick GaZnO interlayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 12, ';', 0]

GaZnO
###Pure spin current transport in gallium doped zinc oxide|Matthias Althammer,Joynarayan Mukherjee,Stephan Geprägs,Sebastian T. B. Goennenwein,Matthias Opel,M. S. Ramachandra Rao,Rudolf Gross###
(1467850, 1467852)
 Nevertheless, the SMR stays finite even for a12;mathrmnm thick GaZnO interlayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 12, ';', 0]

S
###Pure spin current transport in gallium doped zinc oxide|Matthias Althammer,Joynarayan Mukherjee,Stephan Geprägs,Sebastian T. B. Goennenwein,Matthias Opel,M. S. Ramachandra Rao,Rudolf Gross###
(1467931, 1467931)
 We also observe differences in both the temperature and the fielddependence of the SMR when comparing tri- and bilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 12, ';', 2]

S
###Pure spin current transport in gallium doped zinc oxide|Matthias Althammer,Joynarayan Mukherjee,Stephan Geprägs,Sebastian T. B. Goennenwein,Matthias Opel,M. S. Ramachandra Rao,Rudolf Gross###
(1468001, 1468001)
 This shows thatinterface resistances play a crucial role for the SMR magnitude in thesetrilayer structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 12, ';', 4]

In
###Resonant spin transfer torque nano-oscillators|Abhishek Sharma,Ashwin A Tulapurkar,Bhaskaran Muralidharan###
(1468128, 1468128)
 In this letter, we theoretically propose to useresonant spin filtering in pentalayer magnetic tunnel junctions as a possibleroute to alleviate these issues and present device designs geared toward a highmicrowave output power and an efficient conversion of the d.c.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[251.0, 775, '%', 4],[267.0, 1300, '%', 4]

NV
###Heterogeneous Memristive Devices Enabled by Magnetic Tunnel Junction Nanopillars Surrounded by Resistive Silicon Switches|Yu Zhang,Xiaoyang Lin,Jean-Paul Adam,Guillaume Agnus,Wenlong Cai,Jean-Rene Coudevylle,Nathalie Isac,Jianlei Yang,Huaiwen Yang,Wang Kang,Kaihua Cao,Hushan Cui,Deming Zhang,Youguang Zhang,Chao Zhao,Weisheng Zhao,Dafine Ravelosona###
(1468547, 1468548)
 Emerging non-volatile memories (NVMs) have currently attracted great interestfor their potential applications in advanced low-power information storage andprocessing technologies.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[286.0, 1000, '%', 4]

NV
###Heterogeneous Memristive Devices Enabled by Magnetic Tunnel Junction Nanopillars Surrounded by Resistive Silicon Switches|Yu Zhang,Xiaoyang Lin,Jean-Paul Adam,Guillaume Agnus,Wenlong Cai,Jean-Rene Coudevylle,Nathalie Isac,Jianlei Yang,Huaiwen Yang,Wang Kang,Kaihua Cao,Hushan Cui,Deming Zhang,Youguang Zhang,Chao Zhao,Weisheng Zhao,Dafine Ravelosona###
(1468593, 1468594)
 Conventional NVMs, such as magnetic random accessmemory (MRAM) and resistive random access memory (RRAM) suffer from limitationsof low tunnel magnetoresistance (TMR), low access speed or finite endurance.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[240.0, 1000, '%', 3]

NV
###Heterogeneous Memristive Devices Enabled by Magnetic Tunnel Junction Nanopillars Surrounded by Resistive Silicon Switches|Yu Zhang,Xiaoyang Lin,Jean-Paul Adam,Guillaume Agnus,Wenlong Cai,Jean-Rene Coudevylle,Nathalie Isac,Jianlei Yang,Huaiwen Yang,Wang Kang,Kaihua Cao,Hushan Cui,Deming Zhang,Youguang Zhang,Chao Zhao,Weisheng Zhao,Dafine Ravelosona###
(1468671, 1468672)
NVMs with synergetic advantages are still highly desired for future computerarchitectures.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 1000, '%', 2]

Re
###Heterogeneous Memristive Devices Enabled by Magnetic Tunnel Junction Nanopillars Surrounded by Resistive Silicon Switches|Yu Zhang,Xiaoyang Lin,Jean-Paul Adam,Guillaume Agnus,Wenlong Cai,Jean-Rene Coudevylle,Nathalie Isac,Jianlei Yang,Huaiwen Yang,Wang Kang,Kaihua Cao,Hushan Cui,Deming Zhang,Youguang Zhang,Chao Zhao,Weisheng Zhao,Dafine Ravelosona###
(1468758, 1468758)
 Here, we report a heterogeneous memristive device composed of amagnetic tunnel junction (MTJ) nanopillar surrounded by resistive siliconswitches, named resistively enhanced MTJ (Re-MTJ), that may be utilized fornovel memristive memories, enabling new functionalities that are inaccessiblefor conventional NVMs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 1000, '%', 1]

NV
###Heterogeneous Memristive Devices Enabled by Magnetic Tunnel Junction Nanopillars Surrounded by Resistive Silicon Switches|Yu Zhang,Xiaoyang Lin,Jean-Paul Adam,Guillaume Agnus,Wenlong Cai,Jean-Rene Coudevylle,Nathalie Isac,Jianlei Yang,Huaiwen Yang,Wang Kang,Kaihua Cao,Hushan Cui,Deming Zhang,Youguang Zhang,Chao Zhao,Weisheng Zhao,Dafine Ravelosona###
(1468801, 1468802)
 Here, we report a heterogeneous memristive device composed of amagnetic tunnel junction (MTJ) nanopillar surrounded by resistive siliconswitches, named resistively enhanced MTJ (Re-MTJ), that may be utilized fornovel memristive memories, enabling new functionalities that are inaccessiblefor conventional NVMs.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 1000, '%', 1]

Re
###Heterogeneous Memristive Devices Enabled by Magnetic Tunnel Junction Nanopillars Surrounded by Resistive Silicon Switches|Yu Zhang,Xiaoyang Lin,Jean-Paul Adam,Guillaume Agnus,Wenlong Cai,Jean-Rene Coudevylle,Nathalie Isac,Jianlei Yang,Huaiwen Yang,Wang Kang,Kaihua Cao,Hushan Cui,Deming Zhang,Youguang Zhang,Chao Zhao,Weisheng Zhao,Dafine Ravelosona###
(1468808, 1468808)
 The Re-MTJ device features a high ON/OFF ratio of >1000%and multilevel resistance behaviour by combining magnetic switching togetherwith resistive switching mechanisms.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 1000, '%', 0]

ON/OFF
###Heterogeneous Memristive Devices Enabled by Magnetic Tunnel Junction Nanopillars Surrounded by Resistive Silicon Switches|Yu Zhang,Xiaoyang Lin,Jean-Paul Adam,Guillaume Agnus,Wenlong Cai,Jean-Rene Coudevylle,Nathalie Isac,Jianlei Yang,Huaiwen Yang,Wang Kang,Kaihua Cao,Hushan Cui,Deming Zhang,Youguang Zhang,Chao Zhao,Weisheng Zhao,Dafine Ravelosona###
(1468822, 1468827)
 The Re-MTJ device features a high ON/OFF ratio of >1000%and multilevel resistance behaviour by combining magnetic switching togetherwith resistive switching mechanisms.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[7.0, 1000, '%', 0]

La2
###Gate tunable spin-orbit coupling and weak antilocalization effect in an epitaxial La$_{2/3}$Sr$_{1/3}$MnO$_3$ thin film|Shao-Pin Chiu,Michihiko Yamanouchi,Tatsuro Oyamada,Hiromichi Ohta,Juhn-Jong Lin###
(1469051, 1469052)
Gate tunable spin-orbit coupling and weak antilocalization effect in an epitaxial La2/3Sr1/3MnO3 thin film.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 10, 'K', 2],[305.0, 2, 'DEG', 5]

Sr1
###Gate tunable spin-orbit coupling and weak antilocalization effect in an epitaxial La$_{2/3}$Sr$_{1/3}$MnO$_3$ thin film|Shao-Pin Chiu,Michihiko Yamanouchi,Tatsuro Oyamada,Hiromichi Ohta,Juhn-Jong Lin###
(1469055, 1469056)
Gate tunable spin-orbit coupling and weak antilocalization effect in an epitaxial La2/3Sr1/3MnO3 thin film.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 10, 'K', 2],[301.0, 2, 'DEG', 5]

MnO3
###Gate tunable spin-orbit coupling and weak antilocalization effect in an epitaxial La$_{2/3}$Sr$_{1/3}$MnO$_3$ thin film|Shao-Pin Chiu,Michihiko Yamanouchi,Tatsuro Oyamada,Hiromichi Ohta,Juhn-Jong Lin###
(1469059, 1469061)
Gate tunable spin-orbit coupling and weak antilocalization effect in an epitaxial La2/3Sr1/3MnO3 thin film.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 10, 'K', 2],[296.0, 2, 'DEG', 5]

La2
###Gate tunable spin-orbit coupling and weak antilocalization effect in an epitaxial La$_{2/3}$Sr$_{1/3}$MnO$_3$ thin film|Shao-Pin Chiu,Michihiko Yamanouchi,Tatsuro Oyamada,Hiromichi Ohta,Juhn-Jong Lin###
(1469070, 1469071)
 Epitaxial La2/3Sr1/3MnO3 (LSMO) films have been grown onSrTiO3 (001) substrates via pulsed laser deposition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 10, 'K', 1],[286.0, 2, 'DEG', 4]

Sr1
###Gate tunable spin-orbit coupling and weak antilocalization effect in an epitaxial La$_{2/3}$Sr$_{1/3}$MnO$_3$ thin film|Shao-Pin Chiu,Michihiko Yamanouchi,Tatsuro Oyamada,Hiromichi Ohta,Juhn-Jong Lin###
(1469074, 1469075)
 Epitaxial La2/3Sr1/3MnO3 (LSMO) films have been grown onSrTiO3 (001) substrates via pulsed laser deposition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 10, 'K', 1],[282.0, 2, 'DEG', 4]

MnO3
###Gate tunable spin-orbit coupling and weak antilocalization effect in an epitaxial La$_{2/3}$Sr$_{1/3}$MnO$_3$ thin film|Shao-Pin Chiu,Michihiko Yamanouchi,Tatsuro Oyamada,Hiromichi Ohta,Juhn-Jong Lin###
(1469078, 1469080)
 Epitaxial La2/3Sr1/3MnO3 (LSMO) films have been grown onSrTiO3 (001) substrates via pulsed laser deposition.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 10, 'K', 1],[277.0, 2, 'DEG', 4]

O
###Gate tunable spin-orbit coupling and weak antilocalization effect in an epitaxial La$_{2/3}$Sr$_{1/3}$MnO$_3$ thin film|Shao-Pin Chiu,Michihiko Yamanouchi,Tatsuro Oyamada,Hiromichi Ohta,Juhn-Jong Lin###
(1469086, 1469086)
 Epitaxial La2/3Sr1/3MnO3 (LSMO) films have been grown onSrTiO3 (001) substrates via pulsed laser deposition.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 10, 'K', 1],[271.0, 2, 'DEG', 4]

SrTiO3
###Gate tunable spin-orbit coupling and weak antilocalization effect in an epitaxial La$_{2/3}$Sr$_{1/3}$MnO$_3$ thin film|Shao-Pin Chiu,Michihiko Yamanouchi,Tatsuro Oyamada,Hiromichi Ohta,Juhn-Jong Lin###
(1469100, 1469103)
 Epitaxial La2/3Sr1/3MnO3 (LSMO) films have been grown onSrTiO3 (001) substrates via pulsed laser deposition.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 10, 'K', 1],[254.0, 2, 'DEG', 4]

In
###Gate tunable spin-orbit coupling and weak antilocalization effect in an epitaxial La$_{2/3}$Sr$_{1/3}$MnO$_3$ thin film|Shao-Pin Chiu,Michihiko Yamanouchi,Tatsuro Oyamada,Hiromichi Ohta,Juhn-Jong Lin###
(1469120, 1469120)
 In a 22-nm thick LSMOfilm with a low residual resistivity of rho0  59 mu Omega cm, we founda zero-field dip in the magnetoresistance (MR) below 10 K, manifesting the weakantilocalization (WAL) effect due to strong spin-orbit coupling (SOC).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 10, 'K', 0],[237.0, 2, 'DEG', 3]

O
###Gate tunable spin-orbit coupling and weak antilocalization effect in an epitaxial La$_{2/3}$Sr$_{1/3}$MnO$_3$ thin film|Shao-Pin Chiu,Michihiko Yamanouchi,Tatsuro Oyamada,Hiromichi Ohta,Juhn-Jong Lin###
(1469133, 1469133)
 In a 22-nm thick LSMOfilm with a low residual resistivity of rho0  59 mu Omega cm, we founda zero-field dip in the magnetoresistance (MR) below 10 K, manifesting the weakantilocalization (WAL) effect due to strong spin-orbit coupling (SOC).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 10, 'K', 0],[224.0, 2, 'DEG', 3]

W
###Gate tunable spin-orbit coupling and weak antilocalization effect in an epitaxial La$_{2/3}$Sr$_{1/3}$MnO$_3$ thin film|Shao-Pin Chiu,Michihiko Yamanouchi,Tatsuro Oyamada,Hiromichi Ohta,Juhn-Jong Lin###
(1469201, 1469201)
 In a 22-nm thick LSMOfilm with a low residual resistivity of rho0  59 mu Omega cm, we founda zero-field dip in the magnetoresistance (MR) below 10 K, manifesting the weakantilocalization (WAL) effect due to strong spin-orbit coupling (SOC).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 10, 'K', 0],[156.0, 2, 'DEG', 3]

(SOC)
###Gate tunable spin-orbit coupling and weak antilocalization effect in an epitaxial La$_{2/3}$Sr$_{1/3}$MnO$_3$ thin film|Shao-Pin Chiu,Michihiko Yamanouchi,Tatsuro Oyamada,Hiromichi Ohta,Juhn-Jong Lin###
(1469220, 1469224)
 In a 22-nm thick LSMOfilm with a low residual resistivity of rho0  59 mu Omega cm, we founda zero-field dip in the magnetoresistance (MR) below 10 K, manifesting the weakantilocalization (WAL) effect due to strong spin-orbit coupling (SOC).
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 10, 'K', 0],[133.0, 2, 'DEG', 3]

W
###Gate tunable spin-orbit coupling and weak antilocalization effect in an epitaxial La$_{2/3}$Sr$_{1/3}$MnO$_3$ thin film|Shao-Pin Chiu,Michihiko Yamanouchi,Tatsuro Oyamada,Hiromichi Ohta,Juhn-Jong Lin###
(1469263, 1469263)
 We haveanalyzed the MR data by including the D<missing VAR>yakonov-Perel spin-relaxationmechanism in the WAL<missing VAR> theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 10, 'K', 1],[94.0, 2, 'DEG', 2]

SOC
###Gate tunable spin-orbit coupling and weak antilocalization effect in an epitaxial La$_{2/3}$Sr$_{1/3}$MnO$_3$ thin film|Shao-Pin Chiu,Michihiko Yamanouchi,Tatsuro Oyamada,Hiromichi Ohta,Juhn-Jong Lin###
(1469305, 1469307)
 We explain that the delocalized spin-down electronsubband states play a crucial role for facilitating marked SOC in clean LSMO.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 10, 'K', 2],[50.0, 2, 'DEG', 1]

O
###Gate tunable spin-orbit coupling and weak antilocalization effect in an epitaxial La$_{2/3}$Sr$_{1/3}$MnO$_3$ thin film|Shao-Pin Chiu,Michihiko Yamanouchi,Tatsuro Oyamada,Hiromichi Ohta,Juhn-Jong Lin###
(1469316, 1469316)
 We explain that the delocalized spin-down electronsubband states play a crucial role for facilitating marked SOC in clean LSMO.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 10, 'K', 2],[41.0, 2, 'DEG', 1]

SOC
###Gate tunable spin-orbit coupling and weak antilocalization effect in an epitaxial La$_{2/3}$Sr$_{1/3}$MnO$_3$ thin film|Shao-Pin Chiu,Michihiko Yamanouchi,Tatsuro Oyamada,Hiromichi Ohta,Juhn-Jong Lin###
(1469331, 1469333)
Moreover, we find that the SOC strength and gate voltage tunability is similarto that in the 2DEG at LaAlO3/SrTiO3 interface, indicating the presenceof an internal electric field near the LSMO/SrTiO3 interface.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 10, 'K', 3],[24.0, 2, 'DEG', 0]

LaAlO3/SrTiO3
###Gate tunable spin-orbit coupling and weak antilocalization effect in an epitaxial La$_{2/3}$Sr$_{1/3}$MnO$_3$ thin film|Shao-Pin Chiu,Michihiko Yamanouchi,Tatsuro Oyamada,Hiromichi Ohta,Juhn-Jong Lin###
(1469361, 1469369)
Moreover, we find that the SOC strength and gate voltage tunability is similarto that in the 2DEG at LaAlO3/SrTiO3 interface, indicating the presenceof an internal electric field near the LSMO/SrTiO3 interface.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[173.0, 10, 'K', 3],[4.0, 2, 'DEG', 0]

O/SrTiO3
###Gate tunable spin-orbit coupling and weak antilocalization effect in an epitaxial La$_{2/3}$Sr$_{1/3}$MnO$_3$ thin film|Shao-Pin Chiu,Michihiko Yamanouchi,Tatsuro Oyamada,Hiromichi Ohta,Juhn-Jong Lin###
(1469398, 1469403)
Moreover, we find that the SOC strength and gate voltage tunability is similarto that in the 2DEG at LaAlO3/SrTiO3 interface, indicating the presenceof an internal electric field near the LSMO/SrTiO3 interface.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[210.0, 10, 'K', 3],[41.0, 2, 'DEG', 0]

In
###Gate tunable spin-orbit coupling and weak antilocalization effect in an epitaxial La$_{2/3}$Sr$_{1/3}$MnO$_3$ thin film|Shao-Pin Chiu,Michihiko Yamanouchi,Tatsuro Oyamada,Hiromichi Ohta,Juhn-Jong Lin###
(1469408, 1469408)
 In a controlmeasurement on a 5-nm thick high resistivity (rho0  280 mu Omega cm)LSMO film, we observe only a small zero-field peak in MR from weak localizationeffect, indicating negligible SOC.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[220.0, 10, 'K', 4],[51.0, 2, 'DEG', 1]

O
###Gate tunable spin-orbit coupling and weak antilocalization effect in an epitaxial La$_{2/3}$Sr$_{1/3}$MnO$_3$ thin film|Shao-Pin Chiu,Michihiko Yamanouchi,Tatsuro Oyamada,Hiromichi Ohta,Juhn-Jong Lin###
(1469449, 1469449)
 In a controlmeasurement on a 5-nm thick high resistivity (rho0  280 mu Omega cm)LSMO film, we observe only a small zero-field peak in MR from weak localizationeffect, indicating negligible SOC.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[261.0, 10, 'K', 4],[92.0, 2, 'DEG', 1]

SOC
###Gate tunable spin-orbit coupling and weak antilocalization effect in an epitaxial La$_{2/3}$Sr$_{1/3}$MnO$_3$ thin film|Shao-Pin Chiu,Michihiko Yamanouchi,Tatsuro Oyamada,Hiromichi Ohta,Juhn-Jong Lin###
(1469489, 1469491)
 In a controlmeasurement on a 5-nm thick high resistivity (rho0  280 mu Omega cm)LSMO film, we observe only a small zero-field peak in MR from weak localizationeffect, indicating negligible SOC.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[301.0, 10, 'K', 4],[132.0, 2, 'DEG', 1]

WS
###High Surface Conductivity of Fermi Arc Electrons in Weyl semimetals|Giacomo Resta,Shu-Ting Pi,Xiangang Wan,Sergey Y. Savrasov###
(1469528, 1469529)
 Weyl semimetals (WSMs), a new type of topological condensed matter, arecurrently attracting great interest due to their unusual electronic states andintriguing transport properties such as chiral anomaly induced negativemagnetoresistance, a semi--quantized anomalous Hall effect and the debatedchiral magnetic effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[400.0, 50, 'larger', 5]

WS
###High Surface Conductivity of Fermi Arc Electrons in Weyl semimetals|Giacomo Resta,Shu-Ting Pi,Xiangang Wan,Sergey Y. Savrasov###
(1469669, 1469670)
Similarly, WSMs exhibit unique topologically protected Fermi arcs surfacestates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[259.0, 50, 'larger', 3]

CP
###High Surface Conductivity of Fermi Arc Electrons in Weyl semimetals|Giacomo Resta,Shu-Ting Pi,Xiangang Wan,Sergey Y. Savrasov###
(1469867, 1469868)
Next, we discuss the effect of strong surface disorder on the resistivity bynumerically simulating a tight binding model with the presence of quenchedsurface vacancies using the Coherent Potential Approximation (CPA) andKubo--Greenwood formalism.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 50, 'larger', 1]

I
###High Surface Conductivity of Fermi Arc Electrons in Weyl semimetals|Giacomo Resta,Shu-Ting Pi,Xiangang Wan,Sergey Y. Savrasov###
(1469950, 1469950)
 We find that the limit of a straight arc geometry isremarkably disorder tolerant, producing surface conductivity that is a factorof 50 larger of a comparable set up with surface states of T<missing VAR>I.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 50, 'larger', 0]

TaAs
###High Surface Conductivity of Fermi Arc Electrons in Weyl semimetals|Giacomo Resta,Shu-Ting Pi,Xiangang Wan,Sergey Y. Savrasov###
(1469975, 1469976)
 Finally, asimulation of the effects of surface vacancies on TaAs is presented,illustrating the disorder tolerance of the topological surface states in arecently discovered WSM<missing VAR> material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 50, 'larger', 1]

WS
###High Surface Conductivity of Fermi Arc Electrons in Weyl semimetals|Giacomo Resta,Shu-Ting Pi,Xiangang Wan,Sergey Y. Savrasov###
(1470011, 1470012)
 Finally, asimulation of the effects of surface vacancies on TaAs is presented,illustrating the disorder tolerance of the topological surface states in arecently discovered WSM<missing VAR> material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 50, 'larger', 1]

II
###Experimental evidence of giant chiral magnetic effect in type-II Weyl semimetal WP$_{2+δ}$ crystals|Yang-Yang Lv,Xiao Li,Bin Pang,Y. B. Chen,Shu-Hua Yao,Jian Zhou,Yan-Feng Chen###
(1470044, 1470045)
Experimental evidence of giant chiral magnetic effect in type-II Weyl semimetal WP2 crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WP2
###Experimental evidence of giant chiral magnetic effect in type-II Weyl semimetal WP$_{2+δ}$ crystals|Yang-Yang Lv,Xiao Li,Bin Pang,Y. B. Chen,Shu-Hua Yao,Jian Zhou,Yan-Feng Chen###
(1470051, 1470053)
Experimental evidence of giant chiral magnetic effect in type-II Weyl semimetal WP2 crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Experimental evidence of giant chiral magnetic effect in type-II Weyl semimetal WP$_{2+δ}$ crystals|Yang-Yang Lv,Xiao Li,Bin Pang,Y. B. Chen,Shu-Hua Yao,Jian Zhou,Yan-Feng Chen###
(1470116, 1470116)
 Chiral magnetic effect is a quantum phenomenon that is breaking of chiralsymmetry of relativistic Weyl fermions by quantum fluctuation under paralleledelectric field E<missing VAR> and magnetic field B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Experimental evidence of giant chiral magnetic effect in type-II Weyl semimetal WP$_{2+δ}$ crystals|Yang-Yang Lv,Xiao Li,Bin Pang,Y. B. Chen,Shu-Hua Yao,Jian Zhou,Yan-Feng Chen###
(1470146, 1470146)
 Intuitively, Weyl fermions withdifferent chirality, under stimulus of paralleled E<missing VAR> and B, will have differentchemical potential that gives rise to an extra current, whose role likes achiral battery in solids.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Experimental evidence of giant chiral magnetic effect in type-II Weyl semimetal WP$_{2+δ}$ crystals|Yang-Yang Lv,Xiao Li,Bin Pang,Y. B. Chen,Shu-Hua Yao,Jian Zhou,Yan-Feng Chen###
(1470305, 1470306)
 Here, totally different from previous reports,we observed the giant chiral magnetic effect evidenced by negativeresistivity and corresponding voltage-current curves lying the second-fourthquadrant in type-II Weyl semimetal WP2delta under following conditionsthe misaligned angle between E<missing VAR> and B is smaller than 20circ, temperature<30 K and externally applied E<missing VAR><50 m<missing VAR>A.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WP2
###Experimental evidence of giant chiral magnetic effect in type-II Weyl semimetal WP$_{2+δ}$ crystals|Yang-Yang Lv,Xiao Li,Bin Pang,Y. B. Chen,Shu-Hua Yao,Jian Zhou,Yan-Feng Chen###
(1470312, 1470314)
 Here, totally different from previous reports,we observed the giant chiral magnetic effect evidenced by negativeresistivity and corresponding voltage-current curves lying the second-fourthquadrant in type-II Weyl semimetal WP2delta under following conditionsthe misaligned angle between E<missing VAR> and B is smaller than 20circ, temperature<30 K and externally applied E<missing VAR><50 m<missing VAR>A.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Experimental evidence of giant chiral magnetic effect in type-II Weyl semimetal WP$_{2+δ}$ crystals|Yang-Yang Lv,Xiao Li,Bin Pang,Y. B. Chen,Shu-Hua Yao,Jian Zhou,Yan-Feng Chen###
(1470336, 1470336)
 Here, totally different from previous reports,we observed the giant chiral magnetic effect evidenced by negativeresistivity and corresponding voltage-current curves lying the second-fourthquadrant in type-II Weyl semimetal WP2delta under following conditionsthe misaligned angle between E<missing VAR> and B is smaller than 20circ, temperature<30 K and externally applied E<missing VAR><50 m<missing VAR>A.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Experimental evidence of giant chiral magnetic effect in type-II Weyl semimetal WP$_{2+δ}$ crystals|Yang-Yang Lv,Xiao Li,Bin Pang,Y. B. Chen,Shu-Hua Yao,Jian Zhou,Yan-Feng Chen###
(1470354, 1470354)
 Here, totally different from previous reports,we observed the giant chiral magnetic effect evidenced by negativeresistivity and corresponding voltage-current curves lying the second-fourthquadrant in type-II Weyl semimetal WP2delta under following conditionsthe misaligned angle between E<missing VAR> and B is smaller than 20circ, temperature<30 K and externally applied E<missing VAR><50 m<missing VAR>A.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WP2
###Experimental evidence of giant chiral magnetic effect in type-II Weyl semimetal WP$_{2+δ}$ crystals|Yang-Yang Lv,Xiao Li,Bin Pang,Y. B. Chen,Shu-Hua Yao,Jian Zhou,Yan-Feng Chen###
(1470404, 1470406)
 Phenomenologically, based on macroscopicChern-Simon-Maxwell equation, the giant chiral magnetic effect observed inWP2delta is attributed to two-order higher coherent time of chiralWeyl-fermion quantum state over Drude transport relaxation-time.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YbMnSb2
###Quantum Oscillations and Coherent Interlayer Transport in a New Topological Dirac Semimetal Candidate: YbMnSb$_2$|Yi-Yan Wang,Sheng Xu,Lin-Lin Sun,Tian-Long Xia###
(1470512, 1470515)
Quantum Oscillations and Coherent Interlayer Transport in a New Topological Dirac Semimetal Candidate YbMnSb2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Quantum Oscillations and Coherent Interlayer Transport in a New Topological Dirac Semimetal Candidate: YbMnSb$_2$|Yi-Yan Wang,Sheng Xu,Lin-Lin Sun,Tian-Long Xia###
(1470524, 1470524)
 Dirac semimetals (D<missing VAR>SMs), which host Dirac fermions and represent new state ofquantum matter, have been studied intensively in condensed matter physics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Quantum Oscillations and Coherent Interlayer Transport in a New Topological Dirac Semimetal Candidate: YbMnSb$_2$|Yi-Yan Wang,Sheng Xu,Lin-Lin Sun,Tian-Long Xia###
(1470608, 1470608)
 In this article, we report the synthesis and thetransport properties of high quality single crystals of YbMnSb2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YbMnSb2
###Quantum Oscillations and Coherent Interlayer Transport in a New Topological Dirac Semimetal Candidate: YbMnSb$_2$|Yi-Yan Wang,Sheng Xu,Lin-Lin Sun,Tian-Long Xia###
(1470644, 1470647)
 In this article, we report the synthesis and thetransport properties of high quality single crystals of YbMnSb2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YbMnSb2
###Quantum Oscillations and Coherent Interlayer Transport in a New Topological Dirac Semimetal Candidate: YbMnSb$_2$|Yi-Yan Wang,Sheng Xu,Lin-Lin Sun,Tian-Long Xia###
(1470650, 1470653)
 YbMnSb2is a new compound with metallic behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Quantum Oscillations and Coherent Interlayer Transport in a New Topological Dirac Semimetal Candidate: YbMnSb$_2$|Yi-Yan Wang,Sheng Xu,Lin-Lin Sun,Tian-Long Xia###
(1470687, 1470687)
 Quantum oscillations, includingShubnikov-de Haas (SdH) oscillation and de Haas-van Alphen (d<missing VAR>HvA) typeoscillation, have been observed at low temperature and high magnetic field.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YbMnSb2
###Quantum Oscillations and Coherent Interlayer Transport in a New Topological Dirac Semimetal Candidate: YbMnSb$_2$|Yi-Yan Wang,Sheng Xu,Lin-Lin Sun,Tian-Long Xia###
(1470795, 1470798)
Small effective masses and nontrivial Berry phase are extracted from theanalyses of quantum oscillations, which provide the transport evidence for thepossible existence of Dirac fermions in YbMnSb2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(FS)
###Quantum Oscillations and Coherent Interlayer Transport in a New Topological Dirac Semimetal Candidate: YbMnSb$_2$|Yi-Yan Wang,Sheng Xu,Lin-Lin Sun,Tian-Long Xia###
(1470841, 1470844)
 The Fermi surface (FS) of YbMnSb2 possesses quasi-twodimensional (2D) characteristic as determined by the angular dependence of SdHoscillation frequency.
Featurization successful!
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YbMnSb2
###Quantum Oscillations and Coherent Interlayer Transport in a New Topological Dirac Semimetal Candidate: YbMnSb$_2$|Yi-Yan Wang,Sheng Xu,Lin-Lin Sun,Tian-Long Xia###
(1470848, 1470851)
 The Fermi surface (FS) of YbMnSb2 possesses quasi-twodimensional (2D) characteristic as determined by the angular dependence of SdHoscillation frequency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Quantum Oscillations and Coherent Interlayer Transport in a New Topological Dirac Semimetal Candidate: YbMnSb$_2$|Yi-Yan Wang,Sheng Xu,Lin-Lin Sun,Tian-Long Xia###
(1470884, 1470884)
 The Fermi surface (FS) of YbMnSb2 possesses quasi-twodimensional (2D) characteristic as determined by the angular dependence of SdHoscillation frequency.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YbMnSb2
###Quantum Oscillations and Coherent Interlayer Transport in a New Topological Dirac Semimetal Candidate: YbMnSb$_2$|Yi-Yan Wang,Sheng Xu,Lin-Lin Sun,Tian-Long Xia###
(1470900, 1470903)
 These findings suggest that YbMnSb2 is a newcandidate of topological Dirac semimetal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoAs2
###Probing the Fermi surface and magnetotransport properties in MoAs$_{2}$|Ratnadwip Singha,Arnab Pariari,Prabhat Mandal,Gaurav Kumar Gupta,Tanmoy Das###
(1470947, 1470949)
Probing the Fermi surface and magnetotransport properties in MoAs2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ds
###Probing the Fermi surface and magnetotransport properties in MoAs$_{2}$|Ratnadwip Singha,Arnab Pariari,Prabhat Mandal,Gaurav Kumar Gupta,Tanmoy Das###
(1470961, 1470961)
 Transition metal dipnictides (TMDs) have recently been identified as possiblecandidates to host topology protected electronic band structure.
EXCEPTION 3: IndexError for Ds
In
Abstract does not contain any numbers.

In
###Commensurate Stripes and Phase Coherence in Manganites Revealed with Cryogenic Scanning Transmission Electron Microscopy|Ismail El Baggari,Benjamin H. Savitzky,Alemayehu S. Admasu,Jaewook Kim,Sang-Wook Cheong,Robert Hovden,Lena F. Kourkoutis###
(1471510, 1471510)
In diffraction, the ordering wavevector changes upon cooling, a behaviortypically associated with incommensurate order.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 93, 'K', 1],[169.0, 93, 'K', 3]

I
###Observation of Magnetic Radial Vortex Nucleation in a Multilayer Stack with Tunable Anisotropy|Vedat Karakas,Aisha Gokce,Ali Taha Habiboglu,Sevdenur Arpaci,Kaan Ozbozduman,Ibrahim Cinar,Cenk Yanik,Riccardo Tomasello,Silvia Tacchi,Giulio Siracusano,Mario Carpentieri,Giovanni Finocchio,Thomas Hauet,Ozhan Ozatay###
(1472362, 1472362)
 Recently discovered exotic magnetic configurations, namely magnetic solitonsappearing in the presence of bulk or interfacial Dzyaloshinskii-MoriyaInteraction (i-DMI), have excited scientists to explore their potentialapplications in emerging spintronic technologies such as race-track magneticmemory, spin logic, radio frequency nano-oscillators and sensors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Observation of Magnetic Radial Vortex Nucleation in a Multilayer Stack with Tunable Anisotropy|Vedat Karakas,Aisha Gokce,Ali Taha Habiboglu,Sevdenur Arpaci,Kaan Ozbozduman,Ibrahim Cinar,Cenk Yanik,Riccardo Tomasello,Silvia Tacchi,Giulio Siracusano,Mario Carpentieri,Giovanni Finocchio,Thomas Hauet,Ozhan Ozatay###
(1472523, 1472523)
In this work, we show that in the presence of i-DMI in Pt/CoFeB/Ti multilayersby tuning the magnetic anisotropy (both in-plane and perpendicular-to-plane)via interface engineering and postproduction treatments, we can stabilize avariety of magnetic configurations such as Neel skyrmions, horseshoes andmost importantly for the first time, the recently predicted isolated radialvortices at room temperature and under zero bias field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Observation of Magnetic Radial Vortex Nucleation in a Multilayer Stack with Tunable Anisotropy|Vedat Karakas,Aisha Gokce,Ali Taha Habiboglu,Sevdenur Arpaci,Kaan Ozbozduman,Ibrahim Cinar,Cenk Yanik,Riccardo Tomasello,Silvia Tacchi,Giulio Siracusano,Mario Carpentieri,Giovanni Finocchio,Thomas Hauet,Ozhan Ozatay###
(1472548, 1472548)
In this work, we show that in the presence of i-DMI in Pt/CoFeB/Ti multilayersby tuning the magnetic anisotropy (both in-plane and perpendicular-to-plane)via interface engineering and postproduction treatments, we can stabilize avariety of magnetic configurations such as Neel skyrmions, horseshoes andmost importantly for the first time, the recently predicted isolated radialvortices at room temperature and under zero bias field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt/CoFeB/Ti
###Observation of Magnetic Radial Vortex Nucleation in a Multilayer Stack with Tunable Anisotropy|Vedat Karakas,Aisha Gokce,Ali Taha Habiboglu,Sevdenur Arpaci,Kaan Ozbozduman,Ibrahim Cinar,Cenk Yanik,Riccardo Tomasello,Silvia Tacchi,Giulio Siracusano,Mario Carpentieri,Giovanni Finocchio,Thomas Hauet,Ozhan Ozatay###
(1472552, 1472558)
In this work, we show that in the presence of i-DMI in Pt/CoFeB/Ti multilayersby tuning the magnetic anisotropy (both in-plane and perpendicular-to-plane)via interface engineering and postproduction treatments, we can stabilize avariety of magnetic configurations such as Neel skyrmions, horseshoes andmost importantly for the first time, the recently predicted isolated radialvortices at room temperature and under zero bias field.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

N
###Observation of Magnetic Radial Vortex Nucleation in a Multilayer Stack with Tunable Anisotropy|Vedat Karakas,Aisha Gokce,Ali Taha Habiboglu,Sevdenur Arpaci,Kaan Ozbozduman,Ibrahim Cinar,Cenk Yanik,Riccardo Tomasello,Silvia Tacchi,Giulio Siracusano,Mario Carpentieri,Giovanni Finocchio,Thomas Hauet,Ozhan Ozatay###
(1472624, 1472624)
In this work, we show that in the presence of i-DMI in Pt/CoFeB/Ti multilayersby tuning the magnetic anisotropy (both in-plane and perpendicular-to-plane)via interface engineering and postproduction treatments, we can stabilize avariety of magnetic configurations such as Neel skyrmions, horseshoes andmost importantly for the first time, the recently predicted isolated radialvortices at room temperature and under zero bias field.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Asymmetric $d$-wave superconducting topological insulator in proximity with a magnetic order|M. Khezerlou,H. Goudarzi###
(1472823, 1472823)
 In the framework of the Dirac-Bogoliubov-de Gennes formalism, we investigatethe transport properties in the surface of a 3-dimensional topologicalinsulator-based hybrid structure, where the ferromagnetic and superconductingorders are simultaneously induced to the surface states via the proximityeffect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N/F/FS
###Asymmetric $d$-wave superconducting topological insulator in proximity with a magnetic order|M. Khezerlou,H. Goudarzi###
(1473043, 1473048)
 We propose a topological insulatorN/F/FS junction and proceed to clarify the role of d<missing VAR>-wave asymmetry pairingin the resulting subgap and overgap tunneling conductance.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

F
###Asymmetric $d$-wave superconducting topological insulator in proximity with a magnetic order|M. Khezerlou,H. Goudarzi###
(1473105, 1473105)
 The perpendicularcomponent of magnetizations in F and FS regions can be at the parallel andantiparallel configurations leading to capture the experimentally importantmagnetoresistance (MR) of junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FS
###Asymmetric $d$-wave superconducting topological insulator in proximity with a magnetic order|M. Khezerlou,H. Goudarzi###
(1473109, 1473110)
 The perpendicularcomponent of magnetizations in F and FS regions can be at the parallel andantiparallel configurations leading to capture the experimentally importantmagnetoresistance (MR) of junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FS
###Asymmetric $d$-wave superconducting topological insulator in proximity with a magnetic order|M. Khezerlou,H. Goudarzi###
(1473191, 1473192)
 It is found that the zero-bias conductanceis strongly sensitive to the magnitude of magnetization in FS region m<missing VAR>zfsand orbital rotated angle alpha of superconductor gap.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###The sign phase transition in the problem of interfering directed paths|C. L. Baldwin,C. R. Laumann,B. Spivak###
(1473338, 1473338)
 At long distance, the average sign of the sum over paths maytend to zero (sign-disordered) or remain finite (sign-ordered) depending ondimensionality and the concentration of negative scattering sites x<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[187.0, 2, 'D', 4],[219.0, 3, 'D', 4],[328.0, 3, 'D', 6]

In
###The sign phase transition in the problem of interfering directed paths|C. L. Baldwin,C. R. Laumann,B. Spivak###
(1473459, 1473459)
 In three dimensions, wepresent strong evidence that there is a sign phase transition at a finite xc> 0.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 2, 'D', 2],[98.0, 3, 'D', 2],[207.0, 3, 'D', 4]

In
###The sign phase transition in the problem of interfering directed paths|C. L. Baldwin,C. R. Laumann,B. Spivak###
(1473524, 1473524)
In 2D insulators at low temperature, the variable range hoppingmagnetoresistance is always negative, while in 3D, it changes sign at the pointof the sign phase transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[1.0, 2, 'D', 0],[33.0, 3, 'D', 0],[142.0, 3, 'D', 2]

NbP
###Reentrant Metallic Behavior in the Weyl Semimetal NbP|J. Xu,D. E. Bugaris,Z. L. Xiao,Y. L. Wang,D. Y. Chung,M. G. Kanatzidis,W. K. Kwok###
(1473716, 1473717)
Reentrant Metallic Behavior in the Weyl Semimetal NbP.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbP
###Reentrant Metallic Behavior in the Weyl Semimetal NbP|J. Xu,D. E. Bugaris,Z. L. Xiao,Y. L. Wang,D. Y. Chung,M. G. Kanatzidis,W. K. Kwok###
(1473745, 1473746)
 We report the occurrence of reentrant metallic behavior in the Weyl semimetalNbP.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Reentrant Metallic Behavior in the Weyl Semimetal NbP|J. Xu,D. E. Bugaris,Z. L. Xiao,Y. L. Wang,D. Y. Chung,M. G. Kanatzidis,W. K. Kwok###
(1473759, 1473759)
 When the applied magnetic field H is above a critical value Hc<missing VAR>, areentrance appears as a peak in the temperature dependent resistivityrhoxx(T) at T<missing VAR>  Tp, similar to that observed in graphite where itwas attributed to local superconductivity.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Reentrant Metallic Behavior in the Weyl Semimetal NbP|J. Xu,D. E. Bugaris,Z. L. Xiao,Y. L. Wang,D. Y. Chung,M. G. Kanatzidis,W. K. Kwok###
(1473771, 1473771)
 When the applied magnetic field H is above a critical value Hc<missing VAR>, areentrance appears as a peak in the temperature dependent resistivityrhoxx(T) at T<missing VAR>  Tp, similar to that observed in graphite where itwas attributed to local superconductivity.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(H)
###Reentrant Metallic Behavior in the Weyl Semimetal NbP|J. Xu,D. E. Bugaris,Z. L. Xiao,Y. L. Wang,D. Y. Chung,M. G. Kanatzidis,W. K. Kwok###
(1473846, 1473848)
 The Tp(H) relationship follows apower-law dependence Tpsim(H-Hc)1/v<missing VAR> where v<missing VAR> can be derived from thetemperature dependence of the zero-field resistivity rho0(T) sim Tv.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Reentrant Metallic Behavior in the Weyl Semimetal NbP|J. Xu,D. E. Bugaris,Z. L. Xiao,Y. L. Wang,D. Y. Chung,M. G. Kanatzidis,W. K. Kwok###
(1473867, 1473867)
 The Tp(H) relationship follows apower-law dependence Tpsim(H-Hc)1/v<missing VAR> where v<missing VAR> can be derived from thetemperature dependence of the zero-field resistivity rho0(T) sim Tv.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Reentrant Metallic Behavior in the Weyl Semimetal NbP|J. Xu,D. E. Bugaris,Z. L. Xiao,Y. L. Wang,D. Y. Chung,M. G. Kanatzidis,W. K. Kwok###
(1473869, 1473869)
 The Tp(H) relationship follows apower-law dependence Tpsim(H-Hc)1/v<missing VAR> where v<missing VAR> can be derived from thetemperature dependence of the zero-field resistivity rho0(T) sim Tv.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Reentrant Metallic Behavior in the Weyl Semimetal NbP|J. Xu,D. E. Bugaris,Z. L. Xiao,Y. L. Wang,D. Y. Chung,M. G. Kanatzidis,W. K. Kwok###
(1474057, 1474057)
 Quantitative analysis indicates that the reentrantmetallic behavior arises from the competition of the magneto conductivitysigmaxx(T) with an additional componentDeltasigmaxx(T)kappaHsigmaxx(T) wherekappaH[rhoxy(T)/rhoxx(T)]2 is the Hall factor.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Reentrant Metallic Behavior in the Weyl Semimetal NbP|J. Xu,D. E. Bugaris,Z. L. Xiao,Y. L. Wang,D. Y. Chung,M. G. Kanatzidis,W. K. Kwok###
(1474068, 1474068)
 Quantitative analysis indicates that the reentrantmetallic behavior arises from the competition of the magneto conductivitysigmaxx(T) with an additional componentDeltasigmaxx(T)kappaHsigmaxx(T) wherekappaH[rhoxy(T)/rhoxx(T)]2 is the Hall factor.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Reentrant Metallic Behavior in the Weyl Semimetal NbP|J. Xu,D. E. Bugaris,Z. L. Xiao,Y. L. Wang,D. Y. Chung,M. G. Kanatzidis,W. K. Kwok###
(1474108, 1474108)
 We find that theHall factor (kappaH approx 0.4) at peak temperature Tp is nearlyfield-independent, leading to the observed Tp(H) relationship.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(H)
###Reentrant Metallic Behavior in the Weyl Semimetal NbP|J. Xu,D. E. Bugaris,Z. L. Xiao,Y. L. Wang,D. Y. Chung,M. G. Kanatzidis,W. K. Kwok###
(1474144, 1474146)
 We find that theHall factor (kappaH approx 0.4) at peak temperature Tp is nearlyfield-independent, leading to the observed Tp(H) relationship.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(H)
###Reentrant Metallic Behavior in the Weyl Semimetal NbP|J. Xu,D. E. Bugaris,Z. L. Xiao,Y. L. Wang,D. Y. Chung,M. G. Kanatzidis,W. K. Kwok###
(1474188, 1474190)
 Furthermore,the reentrant metallic behavior in rhoxx(T) also is reflected in thebehavior of rhoxx(H) that ranges from non-saturating at T<missing VAR>>70 K tosaturation at liquid helium temperatures.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Reentrant Metallic Behavior in the Weyl Semimetal NbP|J. Xu,D. E. Bugaris,Z. L. Xiao,Y. L. Wang,D. Y. Chung,M. G. Kanatzidis,W. K. Kwok###
(1474208, 1474208)
 Furthermore,the reentrant metallic behavior in rhoxx(T) also is reflected in thebehavior of rhoxx(H) that ranges from non-saturating at T<missing VAR>>70 K tosaturation at liquid helium temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H(H)
###Reentrant Metallic Behavior in the Weyl Semimetal NbP|J. Xu,D. E. Bugaris,Z. L. Xiao,Y. L. Wang,D. Y. Chung,M. G. Kanatzidis,W. K. Kwok###
(1474254, 1474257)
 The latter can be explained with themagnetic field dependence of the Hall factor kappaH(H).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbP
###Reentrant Metallic Behavior in the Weyl Semimetal NbP|J. Xu,D. E. Bugaris,Z. L. Xiao,Y. L. Wang,D. Y. Chung,M. G. Kanatzidis,W. K. Kwok###
(1474296, 1474297)
 Our studiesdemonstrate that a semiclassical theory can account for the anomalies in themagnetotransport phenomena of NbP without invoking an exotic mechanism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Se3
###Magnetic and magnetotransport properties of Bi$_2$Se$_3$ thin films doped by Eu|B. A. Aronzon,L. N. Oveshnikov,V. A. Prudkoglyad,Yu. G. Selivanov,E. G. Chizhevskii,K. I. Kugel,I. A. Karateev,A. L. Vasiliev,E. Lahderanta###
(1474328, 1474331)
Magnetic and magnetotransport properties of Bi2Se3 thin films doped by Eu.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 15, 'K', 4],[274.0, 0.1, 'and', 7],[286.0, 8, 'K', 7],[296.0, 64, 'K', 7]

Eu
###Magnetic and magnetotransport properties of Bi$_2$Se$_3$ thin films doped by Eu|B. A. Aronzon,L. N. Oveshnikov,V. A. Prudkoglyad,Yu. G. Selivanov,E. G. Chizhevskii,K. I. Kugel,I. A. Karateev,A. L. Vasiliev,E. Lahderanta###
(1474341, 1474341)
Magnetic and magnetotransport properties of Bi2Se3 thin films doped by Eu.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[168.0, 15, 'K', 4],[264.0, 0.1, 'and', 7],[276.0, 8, 'K', 7],[286.0, 64, 'K', 7]

Bi1-xEu
###Magnetic and magnetotransport properties of Bi$_2$Se$_3$ thin films doped by Eu|B. A. Aronzon,L. N. Oveshnikov,V. A. Prudkoglyad,Yu. G. Selivanov,E. G. Chizhevskii,K. I. Kugel,I. A. Karateev,A. L. Vasiliev,E. Lahderanta###
(1474359, 1474363)
 Structural, magnetic and magnetotransport properties of(Bi1-xEux)2Se3 thin films have been studied experimentally as afunction of Eu content.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[146.0, 15, 'K', 3],[242.0, 0.1, 'and', 6],[254.0, 8, 'K', 6],[264.0, 64, 'K', 6]

Se3
###Magnetic and magnetotransport properties of Bi$_2$Se$_3$ thin films doped by Eu|B. A. Aronzon,L. N. Oveshnikov,V. A. Prudkoglyad,Yu. G. Selivanov,E. G. Chizhevskii,K. I. Kugel,I. A. Karateev,A. L. Vasiliev,E. Lahderanta###
(1474367, 1474368)
 Structural, magnetic and magnetotransport properties of(Bi1-xEux)2Se3 thin films have been studied experimentally as afunction of Eu content.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 15, 'K', 3],[237.0, 0.1, 'and', 6],[249.0, 8, 'K', 6],[259.0, 64, 'K', 6]

Eu
###Magnetic and magnetotransport properties of Bi$_2$Se$_3$ thin films doped by Eu|B. A. Aronzon,L. N. Oveshnikov,V. A. Prudkoglyad,Yu. G. Selivanov,E. G. Chizhevskii,K. I. Kugel,I. A. Karateev,A. L. Vasiliev,E. Lahderanta###
(1474391, 1474391)
 Structural, magnetic and magnetotransport properties of(Bi1-xEux)2Se3 thin films have been studied experimentally as afunction of Eu content.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 15, 'K', 3],[214.0, 0.1, 'and', 6],[226.0, 8, 'K', 6],[236.0, 64, 'K', 6]

Eu
###Magnetic and magnetotransport properties of Bi$_2$Se$_3$ thin films doped by Eu|B. A. Aronzon,L. N. Oveshnikov,V. A. Prudkoglyad,Yu. G. Selivanov,E. G. Chizhevskii,K. I. Kugel,I. A. Karateev,A. L. Vasiliev,E. Lahderanta###
(1474420, 1474420)
 It is demonstratedthat Eu distribution is not uniform, it enter quint-layers forming inside themplain (pancake-like) areas containing Eu atoms, which sizes and concentrationincrease with the growth of Eu content.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 15, 'K', 1],[185.0, 0.1, 'and', 4],[197.0, 8, 'K', 4],[207.0, 64, 'K', 4]

Eu
###Magnetic and magnetotransport properties of Bi$_2$Se$_3$ thin films doped by Eu|B. A. Aronzon,L. N. Oveshnikov,V. A. Prudkoglyad,Yu. G. Selivanov,E. G. Chizhevskii,K. I. Kugel,I. A. Karateev,A. L. Vasiliev,E. Lahderanta###
(1474458, 1474458)
 It is demonstratedthat Eu distribution is not uniform, it enter quint-layers forming inside themplain (pancake-like) areas containing Eu atoms, which sizes and concentrationincrease with the growth of Eu content.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 15, 'K', 1],[147.0, 0.1, 'and', 4],[159.0, 8, 'K', 4],[169.0, 64, 'K', 4]

Eu
###Magnetic and magnetotransport properties of Bi$_2$Se$_3$ thin films doped by Eu|B. A. Aronzon,L. N. Oveshnikov,V. A. Prudkoglyad,Yu. G. Selivanov,E. G. Chizhevskii,K. I. Kugel,I. A. Karateev,A. L. Vasiliev,E. Lahderanta###
(1474482, 1474482)
 It is demonstratedthat Eu distribution is not uniform, it enter quint-layers forming inside themplain (pancake-like) areas containing Eu atoms, which sizes and concentrationincrease with the growth of Eu content.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 15, 'K', 1],[123.0, 0.1, 'and', 4],[135.0, 8, 'K', 4],[145.0, 64, 'K', 4]

Eu
###Magnetic and magnetotransport properties of Bi$_2$Se$_3$ thin films doped by Eu|B. A. Aronzon,L. N. Oveshnikov,V. A. Prudkoglyad,Yu. G. Selivanov,E. G. Chizhevskii,K. I. Kugel,I. A. Karateev,A. L. Vasiliev,E. Lahderanta###
(1474564, 1474564)
 Surprisingly, the features of antilocalization were seen even at Eucontent x<missing VAR>  0.21.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 15, 'K', 2],[41.0, 0.1, 'and', 1],[53.0, 8, 'K', 1],[63.0, 64, 'K', 1]

Eu
###Magnetic and magnetotransport properties of Bi$_2$Se$_3$ thin films doped by Eu|B. A. Aronzon,L. N. Oveshnikov,V. A. Prudkoglyad,Yu. G. Selivanov,E. G. Chizhevskii,K. I. Kugel,I. A. Karateev,A. L. Vasiliev,E. Lahderanta###
(1474583, 1474583)
 With the increase of Eu content the transition toferromagnetic state occurs at x<missing VAR> about 0.1 and with the Curie temperatureapprox 8K, that rises up to 64K for x<missing VAR>  0.21.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 15, 'K', 3],[22.0, 0.1, 'and', 0],[34.0, 8, 'K', 0],[44.0, 64, 'K', 0]

At
###Magnetic and magnetotransport properties of Bi$_2$Se$_3$ thin films doped by Eu|B. A. Aronzon,L. N. Oveshnikov,V. A. Prudkoglyad,Yu. G. Selivanov,E. G. Chizhevskii,K. I. Kugel,I. A. Karateev,A. L. Vasiliev,E. Lahderanta###
(1474637, 1474637)
 At temperatures above 1-2K, the dephasing length is proportional to T<missing VAR>-1/2 indicating the dominantcontribution of inelastic e-e scattering into electron phase breaking.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 15, 'K', 4],[32.0, 0.1, 'and', 1],[20.0, 8, 'K', 1],[10.0, 64, 'K', 1]

K
###Magnetic and magnetotransport properties of Bi$_2$Se$_3$ thin films doped by Eu|B. A. Aronzon,L. N. Oveshnikov,V. A. Prudkoglyad,Yu. G. Selivanov,E. G. Chizhevskii,K. I. Kugel,I. A. Karateev,A. L. Vasiliev,E. Lahderanta###
(1474648, 1474648)
 At temperatures above 1-2K, the dephasing length is proportional to T<missing VAR>-1/2 indicating the dominantcontribution of inelastic e-e scattering into electron phase breaking.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 15, 'K', 4],[43.0, 0.1, 'and', 1],[31.0, 8, 'K', 1],[21.0, 64, 'K', 1]

In
###The SU(4) Kondo effect in double quantum dots with ferromagnetic leads|Ireneusz Weymann,Razvan Chirla,Piotr Trocha,Catalin Pascu Moca###
(1475092, 1475092)
 In terms of methods used, we characterize transportby using a combination of analytical and numerical renormalization groupapproaches.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Spin driven emergent antiferromagnetism and metal insulator transition in nanoscale p-Si|Paul C Lou,Sandeep Kumar###
(1475164, 1475164)
Spin driven emergent antiferromagnetism and metal insulator transition in nanoscale p<missing VAR>-Si.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Spin driven emergent antiferromagnetism and metal insulator transition in nanoscale p-Si|Paul C Lou,Sandeep Kumar###
(1475293, 1475293)
 We hypothesize that the emergent behavior can also occur due to spin,electron and phonon interactions in widely studied simple materials such as Si.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SH
###Spin driven emergent antiferromagnetism and metal insulator transition in nanoscale p-Si|Paul C Lou,Sandeep Kumar###
(1475409, 1475410)
 The central hypothesis is that when one of the specimendimensions is of the same order (or smaller) as the spin diffusion length, thennon-equilibrium spin accumulation due to spin injection or spin-Hall effect(SHE) will lead to emergent phase transformations in the non-ferromagneticsemiconductors.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin driven emergent antiferromagnetism and metal insulator transition in nanoscale p-Si|Paul C Lou,Sandeep Kumar###
(1475438, 1475438)
 In this experimental work, we report spin mediated emergentantiferromagnetism and metal insulator transition in a Pd (1 nm)/Ni81Fe19 (25nm)/MgO (1 nm)/p<missing VAR>-Si (400 nm) thin film specimen.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pd
###Spin driven emergent antiferromagnetism and metal insulator transition in nanoscale p-Si|Paul C Lou,Sandeep Kumar###
(1475472, 1475472)
 In this experimental work, we report spin mediated emergentantiferromagnetism and metal insulator transition in a Pd (1 nm)/Ni81Fe19 (25nm)/MgO (1 nm)/p<missing VAR>-Si (400 nm) thin film specimen.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni81Fe19
###Spin driven emergent antiferromagnetism and metal insulator transition in nanoscale p-Si|Paul C Lou,Sandeep Kumar###
(1475480, 1475483)
 In this experimental work, we report spin mediated emergentantiferromagnetism and metal insulator transition in a Pd (1 nm)/Ni81Fe19 (25nm)/MgO (1 nm)/p<missing VAR>-Si (400 nm) thin film specimen.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.19,0,0.81,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Spin driven emergent antiferromagnetism and metal insulator transition in nanoscale p-Si|Paul C Lou,Sandeep Kumar###
(1475492, 1475493)
 In this experimental work, we report spin mediated emergentantiferromagnetism and metal insulator transition in a Pd (1 nm)/Ni81Fe19 (25nm)/MgO (1 nm)/p<missing VAR>-Si (400 nm) thin film specimen.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Spin driven emergent antiferromagnetism and metal insulator transition in nanoscale p-Si|Paul C Lou,Sandeep Kumar###
(1475503, 1475503)
 In this experimental work, we report spin mediated emergentantiferromagnetism and metal insulator transition in a Pd (1 nm)/Ni81Fe19 (25nm)/MgO (1 nm)/p<missing VAR>-Si (400 nm) thin film specimen.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Spin driven emergent antiferromagnetism and metal insulator transition in nanoscale p-Si|Paul C Lou,Sandeep Kumar###
(1475530, 1475530)
 The spin-Hall effect in p<missing VAR>-Si,observed through Rashba spin-orbit coupling mediated spin-Hallmagnetoresistance behavior, is proposed to cause the spin accumulation andresulting emergent behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Spin-Hall effect and emergent antiferromagnetic phase transition in n-Si|Paul C Lou,Sandeep Kumar###
(1475662, 1475662)
Spin-Hall effect and emergent antiferromagnetic phase transition in n<missing VAR>-Si.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[350.0, 3, 'omega', 7],[367.0, 270, 'K', 7]

Si
###Spin-Hall effect and emergent antiferromagnetic phase transition in n-Si|Paul C Lou,Sandeep Kumar###
(1475681, 1475681)
 Spin current experiences minimal dephasing and scattering in Si due to smallspin-orbit coupling and spin-lattice interactions is the primary source of spinrelaxation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[331.0, 3, 'omega', 6],[348.0, 270, 'K', 6]

In
###Spin-Hall effect and emergent antiferromagnetic phase transition in n-Si|Paul C Lou,Sandeep Kumar###
(1475785, 1475785)
 In n<missing VAR>-Si, spindiffusion length has been reported up to 6 mum<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[227.0, 3, 'omega', 4],[244.0, 270, 'K', 4]

Si
###Spin-Hall effect and emergent antiferromagnetic phase transition in n-Si|Paul C Lou,Sandeep Kumar###
(1475789, 1475789)
 In n<missing VAR>-Si, spindiffusion length has been reported up to 6 mum<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[223.0, 3, 'omega', 4],[240.0, 270, 'K', 4]

Si
###Spin-Hall effect and emergent antiferromagnetic phase transition in n-Si|Paul C Lou,Sandeep Kumar###
(1475823, 1475823)
 The spin accumulation in Siwill modify the thermal transport behavior of Si, which can be detected withthermal characterization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[189.0, 3, 'omega', 3],[206.0, 270, 'K', 3]

Si
###Spin-Hall effect and emergent antiferromagnetic phase transition in n-Si|Paul C Lou,Sandeep Kumar###
(1475840, 1475840)
 The spin accumulation in Siwill modify the thermal transport behavior of Si, which can be detected withthermal characterization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[172.0, 3, 'omega', 3],[189.0, 270, 'K', 3]

In
###Spin-Hall effect and emergent antiferromagnetic phase transition in n-Si|Paul C Lou,Sandeep Kumar###
(1475859, 1475859)
 In this study, we report observation of spin-Halleffect and emergent antiferromagnetic phase transition behavior usingmagneto-electro-thermal transport characterization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 3, 'omega', 2],[170.0, 270, 'K', 2]

Pd
###Spin-Hall effect and emergent antiferromagnetic phase transition in n-Si|Paul C Lou,Sandeep Kumar###
(1475911, 1475911)
 The freestanding Pd (1 nm)/Ni80Fe20 (75 nm)/ MgO (1 nm)/ n<missing VAR>-Si (2 micron) thin film specimen exhibits amagnetic field dependent thermal transport and spin-Hall magnetoresistancebehavior attributed to Rashba effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 3, 'omega', 1],[118.0, 270, 'K', 1]

Ni80Fe20
###Spin-Hall effect and emergent antiferromagnetic phase transition in n-Si|Paul C Lou,Sandeep Kumar###
(1475921, 1475924)
 The freestanding Pd (1 nm)/Ni80Fe20 (75 nm)/ MgO (1 nm)/ n<missing VAR>-Si (2 micron) thin film specimen exhibits amagnetic field dependent thermal transport and spin-Hall magnetoresistancebehavior attributed to Rashba effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 3, 'omega', 1],[105.0, 270, 'K', 1]

MgO
###Spin-Hall effect and emergent antiferromagnetic phase transition in n-Si|Paul C Lou,Sandeep Kumar###
(1475933, 1475934)
 The freestanding Pd (1 nm)/Ni80Fe20 (75 nm)/ MgO (1 nm)/ n<missing VAR>-Si (2 micron) thin film specimen exhibits amagnetic field dependent thermal transport and spin-Hall magnetoresistancebehavior attributed to Rashba effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 3, 'omega', 1],[95.0, 270, 'K', 1]

Si
###Spin-Hall effect and emergent antiferromagnetic phase transition in n-Si|Paul C Lou,Sandeep Kumar###
(1475945, 1475945)
 The freestanding Pd (1 nm)/Ni80Fe20 (75 nm)/ MgO (1 nm)/ n<missing VAR>-Si (2 micron) thin film specimen exhibits amagnetic field dependent thermal transport and spin-Hall magnetoresistancebehavior attributed to Rashba effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 3, 'omega', 1],[84.0, 270, 'K', 1]

Si
###Spin-Hall effect and emergent antiferromagnetic phase transition in n-Si|Paul C Lou,Sandeep Kumar###
(1476182, 1476182)
 The emergentantiferromagnetic phase transition is attributed to the site inversionasymmetry in diamond cubic Si lattice.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[170.0, 3, 'omega', 3],[153.0, 270, 'K', 3]

Sb2Se3
###Discovery of highly spin-polarized conducting surface states in the strong spin-orbit coupling semiconductor Sb$_2$Se$_3$|Shekhar Das,Suman Kamboj,Anshu Sirohi,Aastha Vasdev,Sirshendu Gayen,Prasenjit Guptasarma,Goutam Sheet###
(1476225, 1476228)
Discovery of highly spin-polarized conducting surface states in the strong spin-orbit coupling semiconductor Sb2Se3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B3
###Discovery of highly spin-polarized conducting surface states in the strong spin-orbit coupling semiconductor Sb$_2$Se$_3$|Shekhar Das,Suman Kamboj,Anshu Sirohi,Aastha Vasdev,Sirshendu Gayen,Prasenjit Guptasarma,Goutam Sheet###
(1476239, 1476240)
 Majority of the A2B3 type chalcogenide systems with strong spin-orbitcoupling, like Bi2Se3, Bi2Te3 and Sb2Te3 etc.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Se3
###Discovery of highly spin-polarized conducting surface states in the strong spin-orbit coupling semiconductor Sb$_2$Se$_3$|Shekhar Das,Suman Kamboj,Anshu Sirohi,Aastha Vasdev,Sirshendu Gayen,Prasenjit Guptasarma,Goutam Sheet###
(1476262, 1476265)
 Majority of the A2B3 type chalcogenide systems with strong spin-orbitcoupling, like Bi2Se3, Bi2Te3 and Sb2Te3 etc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Te3
###Discovery of highly spin-polarized conducting surface states in the strong spin-orbit coupling semiconductor Sb$_2$Se$_3$|Shekhar Das,Suman Kamboj,Anshu Sirohi,Aastha Vasdev,Sirshendu Gayen,Prasenjit Guptasarma,Goutam Sheet###
(1476268, 1476271)
 Majority of the A2B3 type chalcogenide systems with strong spin-orbitcoupling, like Bi2Se3, Bi2Te3 and Sb2Te3 etc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sb2Te3
###Discovery of highly spin-polarized conducting surface states in the strong spin-orbit coupling semiconductor Sb$_2$Se$_3$|Shekhar Das,Suman Kamboj,Anshu Sirohi,Aastha Vasdev,Sirshendu Gayen,Prasenjit Guptasarma,Goutam Sheet###
(1476275, 1476278)
 Majority of the A2B3 type chalcogenide systems with strong spin-orbitcoupling, like Bi2Se3, Bi2Te3 and Sb2Te3 etc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sb2Se3
###Discovery of highly spin-polarized conducting surface states in the strong spin-orbit coupling semiconductor Sb$_2$Se$_3$|Shekhar Das,Suman Kamboj,Anshu Sirohi,Aastha Vasdev,Sirshendu Gayen,Prasenjit Guptasarma,Goutam Sheet###
(1476300, 1476303)
 One important exception is Sb2Se3, where atopological non-trivial phase was argued to be possible under ambientconditions, but such a phase could be detected to exist only under pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Discovery of highly spin-polarized conducting surface states in the strong spin-orbit coupling semiconductor Sb$_2$Se$_3$|Shekhar Das,Suman Kamboj,Anshu Sirohi,Aastha Vasdev,Sirshendu Gayen,Prasenjit Guptasarma,Goutam Sheet###
(1476362, 1476362)
 Inthis Letter, we show that like Bi2Se3, Sb2Se3, displays generationof highly spin-polarized current under mesoscopic superconducting pointcontacts as measured by point contact Andreev reflection spectroscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Se3
###Discovery of highly spin-polarized conducting surface states in the strong spin-orbit coupling semiconductor Sb$_2$Se$_3$|Shekhar Das,Suman Kamboj,Anshu Sirohi,Aastha Vasdev,Sirshendu Gayen,Prasenjit Guptasarma,Goutam Sheet###
(1476378, 1476381)
 Inthis Letter, we show that like Bi2Se3, Sb2Se3, displays generationof highly spin-polarized current under mesoscopic superconducting pointcontacts as measured by point contact Andreev reflection spectroscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sb2Se3
###Discovery of highly spin-polarized conducting surface states in the strong spin-orbit coupling semiconductor Sb$_2$Se$_3$|Shekhar Das,Suman Kamboj,Anshu Sirohi,Aastha Vasdev,Sirshendu Gayen,Prasenjit Guptasarma,Goutam Sheet###
(1476384, 1476387)
 Inthis Letter, we show that like Bi2Se3, Sb2Se3, displays generationof highly spin-polarized current under mesoscopic superconducting pointcontacts as measured by point contact Andreev reflection spectroscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Discovery of highly spin-polarized conducting surface states in the strong spin-orbit coupling semiconductor Sb$_2$Se$_3$|Shekhar Das,Suman Kamboj,Anshu Sirohi,Aastha Vasdev,Sirshendu Gayen,Prasenjit Guptasarma,Goutam Sheet###
(1476433, 1476433)
 Inaddition, we observe a large negative and anisotropic magnetoresistance inSb2Se3, when the field is rotated in the basal plane.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sb2Se3
###Discovery of highly spin-polarized conducting surface states in the strong spin-orbit coupling semiconductor Sb$_2$Se$_3$|Shekhar Das,Suman Kamboj,Anshu Sirohi,Aastha Vasdev,Sirshendu Gayen,Prasenjit Guptasarma,Goutam Sheet###
(1476458, 1476461)
 Inaddition, we observe a large negative and anisotropic magnetoresistance inSb2Se3, when the field is rotated in the basal plane.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Se3
###Discovery of highly spin-polarized conducting surface states in the strong spin-orbit coupling semiconductor Sb$_2$Se$_3$|Shekhar Das,Suman Kamboj,Anshu Sirohi,Aastha Vasdev,Sirshendu Gayen,Prasenjit Guptasarma,Goutam Sheet###
(1476491, 1476494)
 However, unlike inBi2Se3, in case of Sb2Se3 a prominent quasiparticle interference(Q<missing VAR>PI) pattern around the defects could be obtained in STM conductance imaging.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sb2Se3
###Discovery of highly spin-polarized conducting surface states in the strong spin-orbit coupling semiconductor Sb$_2$Se$_3$|Shekhar Das,Suman Kamboj,Anshu Sirohi,Aastha Vasdev,Sirshendu Gayen,Prasenjit Guptasarma,Goutam Sheet###
(1476503, 1476506)
 However, unlike inBi2Se3, in case of Sb2Se3 a prominent quasiparticle interference(Q<missing VAR>PI) pattern around the defects could be obtained in STM conductance imaging.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Discovery of highly spin-polarized conducting surface states in the strong spin-orbit coupling semiconductor Sb$_2$Se$_3$|Shekhar Das,Suman Kamboj,Anshu Sirohi,Aastha Vasdev,Sirshendu Gayen,Prasenjit Guptasarma,Goutam Sheet###
(1476520, 1476520)
 However, unlike inBi2Se3, in case of Sb2Se3 a prominent quasiparticle interference(Q<missing VAR>PI) pattern around the defects could be obtained in STM conductance imaging.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Discovery of highly spin-polarized conducting surface states in the strong spin-orbit coupling semiconductor Sb$_2$Se$_3$|Shekhar Das,Suman Kamboj,Anshu Sirohi,Aastha Vasdev,Sirshendu Gayen,Prasenjit Guptasarma,Goutam Sheet###
(1476539, 1476539)
 However, unlike inBi2Se3, in case of Sb2Se3 a prominent quasiparticle interference(Q<missing VAR>PI) pattern around the defects could be obtained in STM conductance imaging.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sb2Se3
###Discovery of highly spin-polarized conducting surface states in the strong spin-orbit coupling semiconductor Sb$_2$Se$_3$|Shekhar Das,Suman Kamboj,Anshu Sirohi,Aastha Vasdev,Sirshendu Gayen,Prasenjit Guptasarma,Goutam Sheet###
(1476560, 1476563)
Thus, our experiments indicate that Sb2Se3 is a regular band insulatorunder ambient conditions, but due to its<missing VAR> high spin-orbit coupling, non-trivialspin-texture exists on the surface and the system could be on the verge of atopological insulator phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaMnAs
###Large current modulation and tunneling magnetoresistance change by a side-gate electric field in a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor|Toshiki Kanaki,Hiroki Yamasaki,Tomohiro Koyama,Daichi Chiba,Shinobu Ohya,Masaaki Tanaka###
(1476684, 1476686)
Large current modulation and tunneling magnetoresistance change by a side-gate electric field in a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 130, '%', 2],[287.0, 7, '%', 4]

OSF
###Large current modulation and tunneling magnetoresistance change by a side-gate electric field in a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor|Toshiki Kanaki,Hiroki Yamasaki,Tomohiro Koyama,Daichi Chiba,Shinobu Ohya,Masaaki Tanaka###
(1476730, 1476732)
 A vertical spin metal-oxide-semiconductor field-effect transistor (spinM<missing VAR>OSFET) is a promising low-power device for the post scaling era.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 130, '%', 1],[241.0, 7, '%', 3]

GaMnAs
###Large current modulation and tunneling magnetoresistance change by a side-gate electric field in a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor|Toshiki Kanaki,Hiroki Yamasaki,Tomohiro Koyama,Daichi Chiba,Shinobu Ohya,Masaaki Tanaka###
(1476772, 1476774)
 Here, using aferromagnetic-semiconductor GaMnAs-based vertical spin M<missing VAR>OSFET with a GaAschannel layer, we demonstrate a large drain-source current ID<missing VAR>S modulation by agate-source voltage VG<missing VAR>S with a modulation ratio up to 130%, which is thelargest value that has ever been reported for vertical spin field-effecttransistors thus far.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 130, '%', 0],[199.0, 7, '%', 2]

OSF
###Large current modulation and tunneling magnetoresistance change by a side-gate electric field in a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor|Toshiki Kanaki,Hiroki Yamasaki,Tomohiro Koyama,Daichi Chiba,Shinobu Ohya,Masaaki Tanaka###
(1476783, 1476785)
 Here, using aferromagnetic-semiconductor GaMnAs-based vertical spin M<missing VAR>OSFET with a GaAschannel layer, we demonstrate a large drain-source current ID<missing VAR>S modulation by agate-source voltage VG<missing VAR>S with a modulation ratio up to 130%, which is thelargest value that has ever been reported for vertical spin field-effecttransistors thus far.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 130, '%', 0],[188.0, 7, '%', 2]

GaAs
###Large current modulation and tunneling magnetoresistance change by a side-gate electric field in a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor|Toshiki Kanaki,Hiroki Yamasaki,Tomohiro Koyama,Daichi Chiba,Shinobu Ohya,Masaaki Tanaka###
(1476793, 1476794)
 Here, using aferromagnetic-semiconductor GaMnAs-based vertical spin M<missing VAR>OSFET with a GaAschannel layer, we demonstrate a large drain-source current ID<missing VAR>S modulation by agate-source voltage VG<missing VAR>S with a modulation ratio up to 130%, which is thelargest value that has ever been reported for vertical spin field-effecttransistors thus far.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 130, '%', 0],[179.0, 7, '%', 2]

I
###Large current modulation and tunneling magnetoresistance change by a side-gate electric field in a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor|Toshiki Kanaki,Hiroki Yamasaki,Tomohiro Koyama,Daichi Chiba,Shinobu Ohya,Masaaki Tanaka###
(1476816, 1476816)
 Here, using aferromagnetic-semiconductor GaMnAs-based vertical spin M<missing VAR>OSFET with a GaAschannel layer, we demonstrate a large drain-source current ID<missing VAR>S modulation by agate-source voltage VG<missing VAR>S with a modulation ratio up to 130%, which is thelargest value that has ever been reported for vertical spin field-effecttransistors thus far.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 130, '%', 0],[157.0, 7, '%', 2]

S
###Large current modulation and tunneling magnetoresistance change by a side-gate electric field in a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor|Toshiki Kanaki,Hiroki Yamasaki,Tomohiro Koyama,Daichi Chiba,Shinobu Ohya,Masaaki Tanaka###
(1476818, 1476818)
 Here, using aferromagnetic-semiconductor GaMnAs-based vertical spin M<missing VAR>OSFET with a GaAschannel layer, we demonstrate a large drain-source current ID<missing VAR>S modulation by agate-source voltage VG<missing VAR>S with a modulation ratio up to 130%, which is thelargest value that has ever been reported for vertical spin field-effecttransistors thus far.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 130, '%', 0],[155.0, 7, '%', 2]

V
###Large current modulation and tunneling magnetoresistance change by a side-gate electric field in a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor|Toshiki Kanaki,Hiroki Yamasaki,Tomohiro Koyama,Daichi Chiba,Shinobu Ohya,Masaaki Tanaka###
(1476833, 1476833)
 Here, using aferromagnetic-semiconductor GaMnAs-based vertical spin M<missing VAR>OSFET with a GaAschannel layer, we demonstrate a large drain-source current ID<missing VAR>S modulation by agate-source voltage VG<missing VAR>S with a modulation ratio up to 130%, which is thelargest value that has ever been reported for vertical spin field-effecttransistors thus far.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 130, '%', 0],[140.0, 7, '%', 2]

S
###Large current modulation and tunneling magnetoresistance change by a side-gate electric field in a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor|Toshiki Kanaki,Hiroki Yamasaki,Tomohiro Koyama,Daichi Chiba,Shinobu Ohya,Masaaki Tanaka###
(1476835, 1476835)
 Here, using aferromagnetic-semiconductor GaMnAs-based vertical spin M<missing VAR>OSFET with a GaAschannel layer, we demonstrate a large drain-source current ID<missing VAR>S modulation by agate-source voltage VG<missing VAR>S with a modulation ratio up to 130%, which is thelargest value that has ever been reported for vertical spin field-effecttransistors thus far.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 130, '%', 0],[138.0, 7, '%', 2]

GaAs
###Large current modulation and tunneling magnetoresistance change by a side-gate electric field in a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor|Toshiki Kanaki,Hiroki Yamasaki,Tomohiro Koyama,Daichi Chiba,Shinobu Ohya,Masaaki Tanaka###
(1476923, 1476924)
 We find that the electric field effect on indirecttunneling via defect states in the GaAs channel layer is responsible for thelarge ID<missing VAR>S modulation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 130, '%', 1],[49.0, 7, '%', 1]

I
###Large current modulation and tunneling magnetoresistance change by a side-gate electric field in a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor|Toshiki Kanaki,Hiroki Yamasaki,Tomohiro Koyama,Daichi Chiba,Shinobu Ohya,Masaaki Tanaka###
(1476941, 1476941)
 We find that the electric field effect on indirecttunneling via defect states in the GaAs channel layer is responsible for thelarge ID<missing VAR>S modulation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 130, '%', 1],[32.0, 7, '%', 1]

S
###Large current modulation and tunneling magnetoresistance change by a side-gate electric field in a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor|Toshiki Kanaki,Hiroki Yamasaki,Tomohiro Koyama,Daichi Chiba,Shinobu Ohya,Masaaki Tanaka###
(1476943, 1476943)
 We find that the electric field effect on indirecttunneling via defect states in the GaAs channel layer is responsible for thelarge ID<missing VAR>S modulation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 130, '%', 1],[30.0, 7, '%', 1]

OSF
###Large current modulation and tunneling magnetoresistance change by a side-gate electric field in a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor|Toshiki Kanaki,Hiroki Yamasaki,Tomohiro Koyama,Daichi Chiba,Shinobu Ohya,Masaaki Tanaka###
(1476998, 1477000)
 This device shows a tunneling magnetoresistance (TMR)ratio up to 7%, which is larger than that of the planar-type spin M<missing VAR>OSFE<missing VAR>Ts,indicating that ID<missing VAR>S can be controlled by the magnetization configuration.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 130, '%', 2],[25.0, 7, '%', 0]

I
###Large current modulation and tunneling magnetoresistance change by a side-gate electric field in a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor|Toshiki Kanaki,Hiroki Yamasaki,Tomohiro Koyama,Daichi Chiba,Shinobu Ohya,Masaaki Tanaka###
(1477010, 1477010)
 This device shows a tunneling magnetoresistance (TMR)ratio up to 7%, which is larger than that of the planar-type spin M<missing VAR>OSFE<missing VAR>Ts,indicating that ID<missing VAR>S can be controlled by the magnetization configuration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 130, '%', 2],[37.0, 7, '%', 0]

S
###Large current modulation and tunneling magnetoresistance change by a side-gate electric field in a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor|Toshiki Kanaki,Hiroki Yamasaki,Tomohiro Koyama,Daichi Chiba,Shinobu Ohya,Masaaki Tanaka###
(1477012, 1477012)
 This device shows a tunneling magnetoresistance (TMR)ratio up to 7%, which is larger than that of the planar-type spin M<missing VAR>OSFE<missing VAR>Ts,indicating that ID<missing VAR>S can be controlled by the magnetization configuration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 130, '%', 2],[39.0, 7, '%', 0]

V
###Large current modulation and tunneling magnetoresistance change by a side-gate electric field in a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor|Toshiki Kanaki,Hiroki Yamasaki,Tomohiro Koyama,Daichi Chiba,Shinobu Ohya,Masaaki Tanaka###
(1477055, 1477055)
Furthermore, we find that the TMR ratio can be modulated by VG<missing VAR>S.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[206.0, 130, '%', 3],[82.0, 7, '%', 1]

S
###Large current modulation and tunneling magnetoresistance change by a side-gate electric field in a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor|Toshiki Kanaki,Hiroki Yamasaki,Tomohiro Koyama,Daichi Chiba,Shinobu Ohya,Masaaki Tanaka###
(1477057, 1477057)
Furthermore, we find that the TMR ratio can be modulated by VG<missing VAR>S.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[208.0, 130, '%', 3],[84.0, 7, '%', 1]

GaMnAs
###Large current modulation and tunneling magnetoresistance change by a side-gate electric field in a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor|Toshiki Kanaki,Hiroki Yamasaki,Tomohiro Koyama,Daichi Chiba,Shinobu Ohya,Masaaki Tanaka###
(1477092, 1477094)
 This resultmainly originates from the electric field modulation of the magnetic anisotropyof the GaMnAs ferromagnetic electrodes as well as the potential modulation ofthe nonmagnetic semiconductor GaAs channel layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[243.0, 130, '%', 4],[119.0, 7, '%', 2]

GaAs
###Large current modulation and tunneling magnetoresistance change by a side-gate electric field in a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor|Toshiki Kanaki,Hiroki Yamasaki,Tomohiro Koyama,Daichi Chiba,Shinobu Ohya,Masaaki Tanaka###
(1477121, 1477122)
 This resultmainly originates from the electric field modulation of the magnetic anisotropyof the GaMnAs ferromagnetic electrodes as well as the potential modulation ofthe nonmagnetic semiconductor GaAs channel layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[272.0, 130, '%', 4],[148.0, 7, '%', 2]

OSF
###Large current modulation and tunneling magnetoresistance change by a side-gate electric field in a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor|Toshiki Kanaki,Hiroki Yamasaki,Tomohiro Koyama,Daichi Chiba,Shinobu Ohya,Masaaki Tanaka###
(1477151, 1477153)
 Our findings provideimportant progress towards high-performance vertical spin M<missing VAR>OSFE<missing VAR>Ts.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[302.0, 130, '%', 5],[178.0, 7, '%', 3]

GaAs
###Cyclotron Orbits of Composite Fermions in the Fractional Quantum Hall Regime|Insun Jo,Hao Deng,Yang Liu,L. N. Pfeiffer,K. W. West,K. W. Baldwin,M. Shayegan###
(1477197, 1477198)
 We study a bilayer GaAs hole system that hosts two distinct many-body phasesat low temperatures and high perpendicular magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Cyclotron Orbits of Composite Fermions in the Fractional Quantum Hall Regime|Insun Jo,Hao Deng,Yang Liu,L. N. Pfeiffer,K. W. West,K. W. Baldwin,M. Shayegan###
(1477264, 1477264)
 The higher-density(top) layer develops a Fermi sea of composite fermions (CFs) in its half-filledlowest Landau level, while the lower-density (bottom) layer forms a Wignercrystal (WC) as its filling becomes very small.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(WC)
###Cyclotron Orbits of Composite Fermions in the Fractional Quantum Hall Regime|Insun Jo,Hao Deng,Yang Liu,L. N. Pfeiffer,K. W. West,K. W. Baldwin,M. Shayegan###
(1477307, 1477310)
 The higher-density(top) layer develops a Fermi sea of composite fermions (CFs) in its half-filledlowest Landau level, while the lower-density (bottom) layer forms a Wignercrystal (WC) as its filling becomes very small.
Featurization successful!
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Cyclotron Orbits of Composite Fermions in the Fractional Quantum Hall Regime|Insun Jo,Hao Deng,Yang Liu,L. N. Pfeiffer,K. W. West,K. W. Baldwin,M. Shayegan###
(1477341, 1477341)
 Owing to the inter-layerinteraction, the CFs in the top-layer feel the periodic Coulomb potential ofthe WC in the bottom-layer.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WC
###Cyclotron Orbits of Composite Fermions in the Fractional Quantum Hall Regime|Insun Jo,Hao Deng,Yang Liu,L. N. Pfeiffer,K. W. West,K. W. Baldwin,M. Shayegan###
(1477367, 1477368)
 Owing to the inter-layerinteraction, the CFs in the top-layer feel the periodic Coulomb potential ofthe WC in the bottom-layer.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Cyclotron Orbits of Composite Fermions in the Fractional Quantum Hall Regime|Insun Jo,Hao Deng,Yang Liu,L. N. Pfeiffer,K. W. West,K. W. Baldwin,M. Shayegan###
(1477409, 1477409)
 As the WC layer density increases, theresistance peaks separating the adjacent fractional quantum Hall states in thetop-layer change nonmonotonically and attain maximum values when the cyclotronorbit of the CFs encloses one WC lattice point.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WC
###Cyclotron Orbits of Composite Fermions in the Fractional Quantum Hall Regime|Insun Jo,Hao Deng,Yang Liu,L. N. Pfeiffer,K. W. West,K. W. Baldwin,M. Shayegan###
(1477413, 1477414)
 As the WC layer density increases, theresistance peaks separating the adjacent fractional quantum Hall states in thetop-layer change nonmonotonically and attain maximum values when the cyclotronorbit of the CFs encloses one WC lattice point.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Cyclotron Orbits of Composite Fermions in the Fractional Quantum Hall Regime|Insun Jo,Hao Deng,Yang Liu,L. N. Pfeiffer,K. W. West,K. W. Baldwin,M. Shayegan###
(1477478, 1477478)
 As the WC layer density increases, theresistance peaks separating the adjacent fractional quantum Hall states in thetop-layer change nonmonotonically and attain maximum values when the cyclotronorbit of the CFs encloses one WC lattice point.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WC
###Cyclotron Orbits of Composite Fermions in the Fractional Quantum Hall Regime|Insun Jo,Hao Deng,Yang Liu,L. N. Pfeiffer,K. W. West,K. W. Baldwin,M. Shayegan###
(1477485, 1477486)
 As the WC layer density increases, theresistance peaks separating the adjacent fractional quantum Hall states in thetop-layer change nonmonotonically and attain maximum values when the cyclotronorbit of the CFs encloses one WC lattice point.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Cyclotron Orbits of Composite Fermions in the Fractional Quantum Hall Regime|Insun Jo,Hao Deng,Yang Liu,L. N. Pfeiffer,K. W. West,K. W. Baldwin,M. Shayegan###
(1477508, 1477508)
 These features disappear at T<missing VAR> 275 m<missing VAR>K when the WC melts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WC
###Cyclotron Orbits of Composite Fermions in the Fractional Quantum Hall Regime|Insun Jo,Hao Deng,Yang Liu,L. N. Pfeiffer,K. W. West,K. W. Baldwin,M. Shayegan###
(1477514, 1477515)
 These features disappear at T<missing VAR> 275 m<missing VAR>K when the WC melts.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Cyclotron Orbits of Composite Fermions in the Fractional Quantum Hall Regime|Insun Jo,Hao Deng,Yang Liu,L. N. Pfeiffer,K. W. West,K. W. Baldwin,M. Shayegan###
(1477553, 1477553)
 The observation of such geometric resonance featuresis unprecedented and surprising as it implies that the CFs retain awell-defined cyclotron orbit and Fermi wave vector even deep in the fractionalquantum Hall regime, far from half-filling.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ba
###High temperature linear magnetoresistance and scaling behavior in the Ba(Fe${_{1-x}}$Co${_{x}}$)$_{2}$As$_{2}$ series|Rohit Kumar,Surjeet Singh,Sunil Nair###
(1477630, 1477630)
High temperature linear magnetoresistance and scaling behavior in the Ba(Fe1-xCox)2As2 series.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe1-xCo
###High temperature linear magnetoresistance and scaling behavior in the Ba(Fe${_{1-x}}$Co${_{x}}$)$_{2}$As$_{2}$ series|Rohit Kumar,Surjeet Singh,Sunil Nair###
(1477632, 1477636)
High temperature linear magnetoresistance and scaling behavior in the Ba(Fe1-xCox)2As2 series.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

As2
###High temperature linear magnetoresistance and scaling behavior in the Ba(Fe${_{1-x}}$Co${_{x}}$)$_{2}$As$_{2}$ series|Rohit Kumar,Surjeet Singh,Sunil Nair###
(1477640, 1477641)
High temperature linear magnetoresistance and scaling behavior in the Ba(Fe1-xCox)2As2 series.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ba
###High temperature linear magnetoresistance and scaling behavior in the Ba(Fe${_{1-x}}$Co${_{x}}$)$_{2}$As$_{2}$ series|Rohit Kumar,Surjeet Singh,Sunil Nair###
(1477680, 1477680)
 We present magnetotransport studies of the parent, an underdoped and anoptimally doped composition of the Ba(Fe1-xCox)2As2series.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe1-xCo
###High temperature linear magnetoresistance and scaling behavior in the Ba(Fe${_{1-x}}$Co${_{x}}$)$_{2}$As$_{2}$ series|Rohit Kumar,Surjeet Singh,Sunil Nair###
(1477682, 1477686)
 We present magnetotransport studies of the parent, an underdoped and anoptimally doped composition of the Ba(Fe1-xCox)2As2series.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

As2
###High temperature linear magnetoresistance and scaling behavior in the Ba(Fe${_{1-x}}$Co${_{x}}$)$_{2}$As$_{2}$ series|Rohit Kumar,Surjeet Singh,Sunil Nair###
(1477690, 1477691)
 We present magnetotransport studies of the parent, an underdoped and anoptimally doped composition of the Ba(Fe1-xCox)2As2series.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###High temperature linear magnetoresistance and scaling behavior in the Ba(Fe${_{1-x}}$Co${_{x}}$)$_{2}$As$_{2}$ series|Rohit Kumar,Surjeet Singh,Sunil Nair###
(1477922, 1477922)
 We alsodemonstrate that the B/T<missing VAR> scaling proposed recently in the context of quantumcritical systems is seen to be valid in all these systems.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaAlO3
###Interplay between superconductivity and magnetism in one-unit-cell LaAlO3 capped with SrTiO3|Yongsu Kwak,Woojoo Han,Thach D. N. Ngo,Dorj Odkhuu,Jihwan Kim,Young Heon Kim,Noejung Park,Sonny H. Rhim,Myung-Hwa Jung,Junho Suh,Seung-Bo Shim,Mahn-Soo Choi,Yong-Joo Doh,Joon Sung Lee,Jonghyun Song,Jinhee Kim###
(1478031, 1478034)
Interplay between superconductivity and magnetism in one-unit-cell LaAlO3 capped with SrTiO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[356.0, 1.31, 'k', 7]

SrTiO3
###Interplay between superconductivity and magnetism in one-unit-cell LaAlO3 capped with SrTiO3|Yongsu Kwak,Woojoo Han,Thach D. N. Ngo,Dorj Odkhuu,Jihwan Kim,Young Heon Kim,Noejung Park,Sonny H. Rhim,Myung-Hwa Jung,Junho Suh,Seung-Bo Shim,Mahn-Soo Choi,Yong-Joo Doh,Joon Sung Lee,Jonghyun Song,Jinhee Kim###
(1478040, 1478043)
Interplay between superconductivity and magnetism in one-unit-cell LaAlO3 capped with SrTiO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[347.0, 1.31, 'k', 7]

LaAlO3
###Interplay between superconductivity and magnetism in one-unit-cell LaAlO3 capped with SrTiO3|Yongsu Kwak,Woojoo Han,Thach D. N. Ngo,Dorj Odkhuu,Jihwan Kim,Young Heon Kim,Noejung Park,Sonny H. Rhim,Myung-Hwa Jung,Junho Suh,Seung-Bo Shim,Mahn-Soo Choi,Yong-Joo Doh,Joon Sung Lee,Jonghyun Song,Jinhee Kim###
(1478071, 1478074)
 To form a conducting layer at the interface between the oxide insulatorsLaAlO3 and SrTiO3, the LaAlO3 layer on the SrTiO3 substrate must be at leastfour unit-cells-thick.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[316.0, 1.31, 'k', 6]

SrTiO3
###Interplay between superconductivity and magnetism in one-unit-cell LaAlO3 capped with SrTiO3|Yongsu Kwak,Woojoo Han,Thach D. N. Ngo,Dorj Odkhuu,Jihwan Kim,Young Heon Kim,Noejung Park,Sonny H. Rhim,Myung-Hwa Jung,Junho Suh,Seung-Bo Shim,Mahn-Soo Choi,Yong-Joo Doh,Joon Sung Lee,Jonghyun Song,Jinhee Kim###
(1478078, 1478081)
 To form a conducting layer at the interface between the oxide insulatorsLaAlO3 and SrTiO3, the LaAlO3 layer on the SrTiO3 substrate must be at leastfour unit-cells-thick.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[309.0, 1.31, 'k', 6]

LaAlO3
###Interplay between superconductivity and magnetism in one-unit-cell LaAlO3 capped with SrTiO3|Yongsu Kwak,Woojoo Han,Thach D. N. Ngo,Dorj Odkhuu,Jihwan Kim,Young Heon Kim,Noejung Park,Sonny H. Rhim,Myung-Hwa Jung,Junho Suh,Seung-Bo Shim,Mahn-Soo Choi,Yong-Joo Doh,Joon Sung Lee,Jonghyun Song,Jinhee Kim###
(1478086, 1478089)
 To form a conducting layer at the interface between the oxide insulatorsLaAlO3 and SrTiO3, the LaAlO3 layer on the SrTiO3 substrate must be at leastfour unit-cells-thick.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[301.0, 1.31, 'k', 6]

SrTiO3
###Interplay between superconductivity and magnetism in one-unit-cell LaAlO3 capped with SrTiO3|Yongsu Kwak,Woojoo Han,Thach D. N. Ngo,Dorj Odkhuu,Jihwan Kim,Young Heon Kim,Noejung Park,Sonny H. Rhim,Myung-Hwa Jung,Junho Suh,Seung-Bo Shim,Mahn-Soo Choi,Yong-Joo Doh,Joon Sung Lee,Jonghyun Song,Jinhee Kim###
(1478097, 1478100)
 To form a conducting layer at the interface between the oxide insulatorsLaAlO3 and SrTiO3, the LaAlO3 layer on the SrTiO3 substrate must be at leastfour unit-cells-thick.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[290.0, 1.31, 'k', 6]

LaAlO3
###Interplay between superconductivity and magnetism in one-unit-cell LaAlO3 capped with SrTiO3|Yongsu Kwak,Woojoo Han,Thach D. N. Ngo,Dorj Odkhuu,Jihwan Kim,Young Heon Kim,Noejung Park,Sonny H. Rhim,Myung-Hwa Jung,Junho Suh,Seung-Bo Shim,Mahn-Soo Choi,Yong-Joo Doh,Joon Sung Lee,Jonghyun Song,Jinhee Kim###
(1478124, 1478127)
 The LaAlO3 SrTiO3 heterointerface thus formed exhibitsvarious intriguing phenomena such as ferromagnetism and superconductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[263.0, 1.31, 'k', 5]

SrTiO3
###Interplay between superconductivity and magnetism in one-unit-cell LaAlO3 capped with SrTiO3|Yongsu Kwak,Woojoo Han,Thach D. N. Ngo,Dorj Odkhuu,Jihwan Kim,Young Heon Kim,Noejung Park,Sonny H. Rhim,Myung-Hwa Jung,Junho Suh,Seung-Bo Shim,Mahn-Soo Choi,Yong-Joo Doh,Joon Sung Lee,Jonghyun Song,Jinhee Kim###
(1478129, 1478132)
 The LaAlO3 SrTiO3 heterointerface thus formed exhibitsvarious intriguing phenomena such as ferromagnetism and superconductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[258.0, 1.31, 'k', 5]

SrTiO3
###Interplay between superconductivity and magnetism in one-unit-cell LaAlO3 capped with SrTiO3|Yongsu Kwak,Woojoo Han,Thach D. N. Ngo,Dorj Odkhuu,Jihwan Kim,Young Heon Kim,Noejung Park,Sonny H. Rhim,Myung-Hwa Jung,Junho Suh,Seung-Bo Shim,Mahn-Soo Choi,Yong-Joo Doh,Joon Sung Lee,Jonghyun Song,Jinhee Kim###
(1478267, 1478270)
 Here, wedemonstrate that capping the bilayer with SrTiO3 relieves this thickness limit,while enhancing the stability and controllability of the interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 1.31, 'k', 2]

In
###Interplay between superconductivity and magnetism in one-unit-cell LaAlO3 capped with SrTiO3|Yongsu Kwak,Woojoo Han,Thach D. N. Ngo,Dorj Odkhuu,Jihwan Kim,Young Heon Kim,Noejung Park,Sonny H. Rhim,Myung-Hwa Jung,Junho Suh,Seung-Bo Shim,Mahn-Soo Choi,Yong-Joo Doh,Joon Sung Lee,Jonghyun Song,Jinhee Kim###
(1478301, 1478301)
 Inaddition, the SrTiO3-capped LaAlO3 exhibits unconventional superconductivity;the critical current dramatically increases under a parallel magnetic field,and shows a reversed hysteresis contrary to the conventional hysteresis ofmagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 1.31, 'k', 1]

SrTiO3
###Interplay between superconductivity and magnetism in one-unit-cell LaAlO3 capped with SrTiO3|Yongsu Kwak,Woojoo Han,Thach D. N. Ngo,Dorj Odkhuu,Jihwan Kim,Young Heon Kim,Noejung Park,Sonny H. Rhim,Myung-Hwa Jung,Junho Suh,Seung-Bo Shim,Mahn-Soo Choi,Yong-Joo Doh,Joon Sung Lee,Jonghyun Song,Jinhee Kim###
(1478309, 1478312)
 Inaddition, the SrTiO3-capped LaAlO3 exhibits unconventional superconductivity;the critical current dramatically increases under a parallel magnetic field,and shows a reversed hysteresis contrary to the conventional hysteresis ofmagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 1.31, 'k', 1]

LaAlO3
###Interplay between superconductivity and magnetism in one-unit-cell LaAlO3 capped with SrTiO3|Yongsu Kwak,Woojoo Han,Thach D. N. Ngo,Dorj Odkhuu,Jihwan Kim,Young Heon Kim,Noejung Park,Sonny H. Rhim,Myung-Hwa Jung,Junho Suh,Seung-Bo Shim,Mahn-Soo Choi,Yong-Joo Doh,Joon Sung Lee,Jonghyun Song,Jinhee Kim###
(1478316, 1478319)
 Inaddition, the SrTiO3-capped LaAlO3 exhibits unconventional superconductivity;the critical current dramatically increases under a parallel magnetic field,and shows a reversed hysteresis contrary to the conventional hysteresis ofmagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 1.31, 'k', 1]

B
###Interplay between superconductivity and magnetism in one-unit-cell LaAlO3 capped with SrTiO3|Yongsu Kwak,Woojoo Han,Thach D. N. Ngo,Dorj Odkhuu,Jihwan Kim,Young Heon Kim,Noejung Park,Sonny H. Rhim,Myung-Hwa Jung,Junho Suh,Seung-Bo Shim,Mahn-Soo Choi,Yong-Joo Doh,Joon Sung Lee,Jonghyun Song,Jinhee Kim###
(1478391, 1478391)
 Its superconducting energy gap of Delta sim 1.31kBTcalso deviates from conventional BCS-type superconductivity.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[1.0, 1.31, 'k', 0]

BCS
###Interplay between superconductivity and magnetism in one-unit-cell LaAlO3 capped with SrTiO3|Yongsu Kwak,Woojoo Han,Thach D. N. Ngo,Dorj Odkhuu,Jihwan Kim,Young Heon Kim,Noejung Park,Sonny H. Rhim,Myung-Hwa Jung,Junho Suh,Seung-Bo Shim,Mahn-Soo Choi,Yong-Joo Doh,Joon Sung Lee,Jonghyun Song,Jinhee Kim###
(1478404, 1478406)
 Its superconducting energy gap of Delta sim 1.31kBTcalso deviates from conventional BCS-type superconductivity.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 1.31, 'k', 0]

LaAlO3
###Interplay between superconductivity and magnetism in one-unit-cell LaAlO3 capped with SrTiO3|Yongsu Kwak,Woojoo Han,Thach D. N. Ngo,Dorj Odkhuu,Jihwan Kim,Young Heon Kim,Noejung Park,Sonny H. Rhim,Myung-Hwa Jung,Junho Suh,Seung-Bo Shim,Mahn-Soo Choi,Yong-Joo Doh,Joon Sung Lee,Jonghyun Song,Jinhee Kim###
(1478462, 1478465)
 The oxide trilayercould be a robust platform for studying the extraordinary interplay ofsuperconductivity and ferromagnetism at the interface electron system betweenLaAlO3 and SrTiO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 1.31, 'k', 1]

SrTiO3
###Interplay between superconductivity and magnetism in one-unit-cell LaAlO3 capped with SrTiO3|Yongsu Kwak,Woojoo Han,Thach D. N. Ngo,Dorj Odkhuu,Jihwan Kim,Young Heon Kim,Noejung Park,Sonny H. Rhim,Myung-Hwa Jung,Junho Suh,Seung-Bo Shim,Mahn-Soo Choi,Yong-Joo Doh,Joon Sung Lee,Jonghyun Song,Jinhee Kim###
(1478469, 1478472)
 The oxide trilayercould be a robust platform for studying the extraordinary interplay ofsuperconductivity and ferromagnetism at the interface electron system betweenLaAlO3 and SrTiO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 1.31, 'k', 1]

FeSe
###Microstructural control of the transport properties of $β$-FeSe films grown by sputtering|M. V. Ale Crivillero,M. L. Amigó,N. Haberkorn,G. Nieva,J. Guimpel###
(1478498, 1478499)
Microstructural control of the transport properties of -FeSe films grown by sputtering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 12, ',', 3]

FeSe
###Microstructural control of the transport properties of $β$-FeSe films grown by sputtering|M. V. Ale Crivillero,M. L. Amigó,N. Haberkorn,G. Nieva,J. Guimpel###
(1478537, 1478538)
 We have investigated the correlation between structural and transportproperties in sputtered beta-FeSe films grown onto SrTiO3 (100).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 12, ',', 2]

SrTiO3
###Microstructural control of the transport properties of $β$-FeSe films grown by sputtering|M. V. Ale Crivillero,M. L. Amigó,N. Haberkorn,G. Nieva,J. Guimpel###
(1478546, 1478549)
 We have investigated the correlation between structural and transportproperties in sputtered beta-FeSe films grown onto SrTiO3 (100).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 12, ',', 2]

In
###Microstructural control of the transport properties of $β$-FeSe films grown by sputtering|M. V. Ale Crivillero,M. L. Amigó,N. Haberkorn,G. Nieva,J. Guimpel###
(1478597, 1478597)
 In the limit of textured thickfilms, we found promising features like an enhanced T<missing VAR>rm c<missing VAR>sim12,K, arelatively high Hrm c<missing VAR>2 and a low anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 12, ',', 0]

K
###Microstructural control of the transport properties of $β$-FeSe films grown by sputtering|M. V. Ale Crivillero,M. L. Amigó,N. Haberkorn,G. Nieva,J. Guimpel###
(1478634, 1478634)
 In the limit of textured thickfilms, we found promising features like an enhanced T<missing VAR>rm c<missing VAR>sim12,K, arelatively high Hrm c<missing VAR>2 and a low anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 12, ',', 0]

H
###Microstructural control of the transport properties of $β$-FeSe films grown by sputtering|M. V. Ale Crivillero,M. L. Amigó,N. Haberkorn,G. Nieva,J. Guimpel###
(1478644, 1478644)
 In the limit of textured thickfilms, we found promising features like an enhanced T<missing VAR>rm c<missing VAR>sim12,K, arelatively high Hrm c<missing VAR>2 and a low anisotropy.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 12, ',', 0]

FeSe
###Microstructural control of the transport properties of $β$-FeSe films grown by sputtering|M. V. Ale Crivillero,M. L. Amigó,N. Haberkorn,G. Nieva,J. Guimpel###
(1478732, 1478733)
 By performingmagnetoresistance and Hall coefficient measurements, we investigate theinfluence of the disorder associated with the textured morphology on somefeatures attributed to subtle details of the multi-band electronic structure ofbeta-FeSe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 12, ',', 1]

SI
###Microstructural control of the transport properties of $β$-FeSe films grown by sputtering|M. V. Ale Crivillero,M. L. Amigó,N. Haberkorn,G. Nieva,J. Guimpel###
(1478747, 1478748)
 Regarding the superconductor-insulator transition (SIT) inducedby reducing the thickness, we found a non-trivial evolution of the structuralproperties and morphology associated with a strained initial growth and thecoalescence of grains.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 12, ',', 2]

Sr
###Structural distortion behind the nematic superconductivity in Sr$_x$Bi$_2$Se$_3$|A. Yu. Kuntsevich,M. A. Bryzgalov,V. A. Prudkoglyad,V. P. Martovitskii,Yu. G. Selivanov,E. G. Chizhevskii###
(1478926, 1478926)
Structural distortion behind the nematic superconductivity in Srx<missing VAR>Bi2Se3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[305.0, 0.02, '%', 6]

Bi2Se3
###Structural distortion behind the nematic superconductivity in Sr$_x$Bi$_2$Se$_3$|A. Yu. Kuntsevich,M. A. Bryzgalov,V. A. Prudkoglyad,V. P. Martovitskii,Yu. G. Selivanov,E. G. Chizhevskii###
(1478928, 1478931)
Structural distortion behind the nematic superconductivity in Srx<missing VAR>Bi2Se3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[300.0, 0.02, '%', 6]

Bi2Se3
###Structural distortion behind the nematic superconductivity in Sr$_x$Bi$_2$Se$_3$|A. Yu. Kuntsevich,M. A. Bryzgalov,V. A. Prudkoglyad,V. P. Martovitskii,Yu. G. Selivanov,E. G. Chizhevskii###
(1478944, 1478947)
 An archetypical layered topological insulator Bi2Se3 becomessuperconductive upon doping with Sr, Nb or Cu.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[284.0, 0.02, '%', 5]

Sr
###Structural distortion behind the nematic superconductivity in Sr$_x$Bi$_2$Se$_3$|A. Yu. Kuntsevich,M. A. Bryzgalov,V. A. Prudkoglyad,V. P. Martovitskii,Yu. G. Selivanov,E. G. Chizhevskii###
(1478960, 1478960)
 An archetypical layered topological insulator Bi2Se3 becomessuperconductive upon doping with Sr, Nb or Cu.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[271.0, 0.02, '%', 5]

Nb
###Structural distortion behind the nematic superconductivity in Sr$_x$Bi$_2$Se$_3$|A. Yu. Kuntsevich,M. A. Bryzgalov,V. A. Prudkoglyad,V. P. Martovitskii,Yu. G. Selivanov,E. G. Chizhevskii###
(1478963, 1478963)
 An archetypical layered topological insulator Bi2Se3 becomessuperconductive upon doping with Sr, Nb or Cu.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[268.0, 0.02, '%', 5]

Cu
###Structural distortion behind the nematic superconductivity in Sr$_x$Bi$_2$Se$_3$|A. Yu. Kuntsevich,M. A. Bryzgalov,V. A. Prudkoglyad,V. P. Martovitskii,Yu. G. Selivanov,E. G. Chizhevskii###
(1478967, 1478967)
 An archetypical layered topological insulator Bi2Se3 becomessuperconductive upon doping with Sr, Nb or Cu.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[264.0, 0.02, '%', 5]

Sr
###Structural distortion behind the nematic superconductivity in Sr$_x$Bi$_2$Se$_3$|A. Yu. Kuntsevich,M. A. Bryzgalov,V. A. Prudkoglyad,V. P. Martovitskii,Yu. G. Selivanov,E. G. Chizhevskii###
(1479163, 1479163)
 To address this question we growhigh quality single crystals of Srx<missing VAR>Bi2Se3, perform detailed X<missing VAR>-raydiffraction and magnetotransport studies and reveal that the observedsuperconducting nematicity direction correlates with the direction of smallstructural distortions in these samples( sim 0.02% elongation in onecrystallographic direction).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 0.02, '%', 0]

Bi2Se3
###Structural distortion behind the nematic superconductivity in Sr$_x$Bi$_2$Se$_3$|A. Yu. Kuntsevich,M. A. Bryzgalov,V. A. Prudkoglyad,V. P. Martovitskii,Yu. G. Selivanov,E. G. Chizhevskii###
(1479165, 1479168)
 To address this question we growhigh quality single crystals of Srx<missing VAR>Bi2Se3, perform detailed X<missing VAR>-raydiffraction and magnetotransport studies and reveal that the observedsuperconducting nematicity direction correlates with the direction of smallstructural distortions in these samples( sim 0.02% elongation in onecrystallographic direction).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 0.02, '%', 0]

Sr
###Structural distortion behind the nematic superconductivity in Sr$_x$Bi$_2$Se$_3$|A. Yu. Kuntsevich,M. A. Bryzgalov,V. A. Prudkoglyad,V. P. Martovitskii,Yu. G. Selivanov,E. G. Chizhevskii###
(1479379, 1479379)
 Our data in combinationwith strong sample-to-sample variation of the superconductive anisotropyparameter are indicative for significance of the structural factor in theapparent nematic superconductivity in Srx<missing VAR>Bi2Se3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 0.02, '%', 3]

Bi2Se3
###Structural distortion behind the nematic superconductivity in Sr$_x$Bi$_2$Se$_3$|A. Yu. Kuntsevich,M. A. Bryzgalov,V. A. Prudkoglyad,V. P. Martovitskii,Yu. G. Selivanov,E. G. Chizhevskii###
(1479381, 1479384)
 Our data in combinationwith strong sample-to-sample variation of the superconductive anisotropyparameter are indicative for significance of the structural factor in theapparent nematic superconductivity in Srx<missing VAR>Bi2Se3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 0.02, '%', 3]

Pd3Bi2S2
###Magneto-transport properties of proposed triply degenerate topological semimetal Pd$_{3}$Bi$_{2}$S$_{2}$|Shubhankar Roy,Arnab Pariari,Ratnadwip Singha,Biswarup Satpati,Prabhat Mandal###
(1479413, 1479418)
Magneto-transport properties of proposed triply degenerate topological semimetal Pd3Bi2S2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 2, 'K', 4],[143.0, 9, 'T', 4]

Pd3Bi2S2
###Magneto-transport properties of proposed triply degenerate topological semimetal Pd$_{3}$Bi$_{2}$S$_{2}$|Shubhankar Roy,Arnab Pariari,Ratnadwip Singha,Biswarup Satpati,Prabhat Mandal###
(1479435, 1479440)
 We report transport properties of single-crystalline Pd3Bi2S2,which has been predicted to host an unconventional electronic phase of matterbeyond three-dimensional Dirac and Weyl semimetals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 2, 'K', 3],[121.0, 9, 'T', 3]

At
###Magneto-transport properties of proposed triply degenerate topological semimetal Pd$_{3}$Bi$_{2}$S$_{2}$|Shubhankar Roy,Arnab Pariari,Ratnadwip Singha,Biswarup Satpati,Prabhat Mandal###
(1479557, 1479557)
 At 2 K and 9 T, the MR value reaches as high assim1.1times103 %.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[1.0, 2, 'K', 0],[4.0, 9, 'T', 0]

In
###Magneto-transport properties of proposed triply degenerate topological semimetal Pd$_{3}$Bi$_{2}$S$_{2}$|Shubhankar Roy,Arnab Pariari,Ratnadwip Singha,Biswarup Satpati,Prabhat Mandal###
(1479629, 1479629)
 In spiteof the large density (> 1021 cm-3), the mobility of charge carriersis found to be quite high (sim 0.75times104 cm2 V-1s<missing VAR>-1 for hole and sim 0.3times104 cm2 V-1 s<missing VAR>-1 forelectron).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 2, 'K', 2],[68.0, 9, 'T', 2]

V
###Magneto-transport properties of proposed triply degenerate topological semimetal Pd$_{3}$Bi$_{2}$S$_{2}$|Shubhankar Roy,Arnab Pariari,Ratnadwip Singha,Biswarup Satpati,Prabhat Mandal###
(1479688, 1479688)
 In spiteof the large density (> 1021 cm-3), the mobility of charge carriersis found to be quite high (sim 0.75times104 cm2 V-1s<missing VAR>-1 for hole and sim 0.3times104 cm2 V-1 s<missing VAR>-1 forelectron).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 2, 'K', 2],[127.0, 9, 'T', 2]

V
###Magneto-transport properties of proposed triply degenerate topological semimetal Pd$_{3}$Bi$_{2}$S$_{2}$|Shubhankar Roy,Arnab Pariari,Ratnadwip Singha,Biswarup Satpati,Prabhat Mandal###
(1479713, 1479713)
 In spiteof the large density (> 1021 cm-3), the mobility of charge carriersis found to be quite high (sim 0.75times104 cm2 V-1s<missing VAR>-1 for hole and sim 0.3times104 cm2 V-1 s<missing VAR>-1 forelectron).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 2, 'K', 2],[152.0, 9, 'T', 2]

Pd3Bi2S2
###Magneto-transport properties of proposed triply degenerate topological semimetal Pd$_{3}$Bi$_{2}$S$_{2}$|Shubhankar Roy,Arnab Pariari,Ratnadwip Singha,Biswarup Satpati,Prabhat Mandal###
(1479743, 1479748)
 The observed magneto-electrical properties indicate thatPd3Bi2S2 may be a new member of the topological semimetalfamily, which can have a significant impact in technological applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[185.0, 2, 'K', 3],[182.0, 9, 'T', 3]

La2
###Electrical-current-induced magnetic hysteresis in self-assembled vertically aligned La_{2/3}Sr_{1/3}MnO_3:ZnO-nanopillar composites|W. Pan,P. Lu,J. F. Ihlefeld,S. R. Lee,E. S. Choi,Y. Jiang,Q. X. Jia###
(1479819, 1479820)
Electrical-current-induced magnetic hysteresis in self-assembled vertically aligned La2/3Sr1/3MnO3ZnO-nanopillar composites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[354.0, 1, 'uA', 6],[405.0, 10, 'uA', 7]

Sr1
###Electrical-current-induced magnetic hysteresis in self-assembled vertically aligned La_{2/3}Sr_{1/3}MnO_3:ZnO-nanopillar composites|W. Pan,P. Lu,J. F. Ihlefeld,S. R. Lee,E. S. Choi,Y. Jiang,Q. X. Jia###
(1479823, 1479824)
Electrical-current-induced magnetic hysteresis in self-assembled vertically aligned La2/3Sr1/3MnO3ZnO-nanopillar composites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[350.0, 1, 'uA', 6],[401.0, 10, 'uA', 7]

MnO3ZnO
###Electrical-current-induced magnetic hysteresis in self-assembled vertically aligned La_{2/3}Sr_{1/3}MnO_3:ZnO-nanopillar composites|W. Pan,P. Lu,J. F. Ihlefeld,S. R. Lee,E. S. Choi,Y. Jiang,Q. X. Jia###
(1479827, 1479831)
Electrical-current-induced magnetic hysteresis in self-assembled vertically aligned La2/3Sr1/3MnO3ZnO-nanopillar composites.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[343.0, 1, 'uA', 6],[394.0, 10, 'uA', 7]

La2
###Electrical-current-induced magnetic hysteresis in self-assembled vertically aligned La_{2/3}Sr_{1/3}MnO_3:ZnO-nanopillar composites|W. Pan,P. Lu,J. F. Ihlefeld,S. R. Lee,E. S. Choi,Y. Jiang,Q. X. Jia###
(1479972, 1479973)
Self-assembled, vertically-aligned La2/3Sr1/3MnO3ZnO nanocomposites, inwhich La2/3Sr1/3MnO3 (LSMO) matrix and ZnO nanopillars form anintertwined structure with coincident-site-matched growth occurring between theLSMO and ZnO vertical interfaces, may offer new MRAM<missing VAR> applications by combiningtheir superior electric, magnetic (B), and optical properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[201.0, 1, 'uA', 2],[252.0, 10, 'uA', 3]

Sr1
###Electrical-current-induced magnetic hysteresis in self-assembled vertically aligned La_{2/3}Sr_{1/3}MnO_3:ZnO-nanopillar composites|W. Pan,P. Lu,J. F. Ihlefeld,S. R. Lee,E. S. Choi,Y. Jiang,Q. X. Jia###
(1479976, 1479977)
Self-assembled, vertically-aligned La2/3Sr1/3MnO3ZnO nanocomposites, inwhich La2/3Sr1/3MnO3 (LSMO) matrix and ZnO nanopillars form anintertwined structure with coincident-site-matched growth occurring between theLSMO and ZnO vertical interfaces, may offer new MRAM<missing VAR> applications by combiningtheir superior electric, magnetic (B), and optical properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[197.0, 1, 'uA', 2],[248.0, 10, 'uA', 3]

MnO3ZnO
###Electrical-current-induced magnetic hysteresis in self-assembled vertically aligned La_{2/3}Sr_{1/3}MnO_3:ZnO-nanopillar composites|W. Pan,P. Lu,J. F. Ihlefeld,S. R. Lee,E. S. Choi,Y. Jiang,Q. X. Jia###
(1479980, 1479984)
Self-assembled, vertically-aligned La2/3Sr1/3MnO3ZnO nanocomposites, inwhich La2/3Sr1/3MnO3 (LSMO) matrix and ZnO nanopillars form anintertwined structure with coincident-site-matched growth occurring between theLSMO and ZnO vertical interfaces, may offer new MRAM<missing VAR> applications by combiningtheir superior electric, magnetic (B), and optical properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[190.0, 1, 'uA', 2],[241.0, 10, 'uA', 3]

La2
###Electrical-current-induced magnetic hysteresis in self-assembled vertically aligned La_{2/3}Sr_{1/3}MnO_3:ZnO-nanopillar composites|W. Pan,P. Lu,J. F. Ihlefeld,S. R. Lee,E. S. Choi,Y. Jiang,Q. X. Jia###
(1479994, 1479995)
Self-assembled, vertically-aligned La2/3Sr1/3MnO3ZnO nanocomposites, inwhich La2/3Sr1/3MnO3 (LSMO) matrix and ZnO nanopillars form anintertwined structure with coincident-site-matched growth occurring between theLSMO and ZnO vertical interfaces, may offer new MRAM<missing VAR> applications by combiningtheir superior electric, magnetic (B), and optical properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 1, 'uA', 2],[230.0, 10, 'uA', 3]

Sr1
###Electrical-current-induced magnetic hysteresis in self-assembled vertically aligned La_{2/3}Sr_{1/3}MnO_3:ZnO-nanopillar composites|W. Pan,P. Lu,J. F. Ihlefeld,S. R. Lee,E. S. Choi,Y. Jiang,Q. X. Jia###
(1479998, 1479999)
Self-assembled, vertically-aligned La2/3Sr1/3MnO3ZnO nanocomposites, inwhich La2/3Sr1/3MnO3 (LSMO) matrix and ZnO nanopillars form anintertwined structure with coincident-site-matched growth occurring between theLSMO and ZnO vertical interfaces, may offer new MRAM<missing VAR> applications by combiningtheir superior electric, magnetic (B), and optical properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 1, 'uA', 2],[226.0, 10, 'uA', 3]

MnO3
###Electrical-current-induced magnetic hysteresis in self-assembled vertically aligned La_{2/3}Sr_{1/3}MnO_3:ZnO-nanopillar composites|W. Pan,P. Lu,J. F. Ihlefeld,S. R. Lee,E. S. Choi,Y. Jiang,Q. X. Jia###
(1480002, 1480004)
Self-assembled, vertically-aligned La2/3Sr1/3MnO3ZnO nanocomposites, inwhich La2/3Sr1/3MnO3 (LSMO) matrix and ZnO nanopillars form anintertwined structure with coincident-site-matched growth occurring between theLSMO and ZnO vertical interfaces, may offer new MRAM<missing VAR> applications by combiningtheir superior electric, magnetic (B), and optical properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[170.0, 1, 'uA', 2],[221.0, 10, 'uA', 3]

O
###Electrical-current-induced magnetic hysteresis in self-assembled vertically aligned La_{2/3}Sr_{1/3}MnO_3:ZnO-nanopillar composites|W. Pan,P. Lu,J. F. Ihlefeld,S. R. Lee,E. S. Choi,Y. Jiang,Q. X. Jia###
(1480010, 1480010)
Self-assembled, vertically-aligned La2/3Sr1/3MnO3ZnO nanocomposites, inwhich La2/3Sr1/3MnO3 (LSMO) matrix and ZnO nanopillars form anintertwined structure with coincident-site-matched growth occurring between theLSMO and ZnO vertical interfaces, may offer new MRAM<missing VAR> applications by combiningtheir superior electric, magnetic (B), and optical properties.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 1, 'uA', 2],[215.0, 10, 'uA', 3]

ZnO
###Electrical-current-induced magnetic hysteresis in self-assembled vertically aligned La_{2/3}Sr_{1/3}MnO_3:ZnO-nanopillar composites|W. Pan,P. Lu,J. F. Ihlefeld,S. R. Lee,E. S. Choi,Y. Jiang,Q. X. Jia###
(1480017, 1480018)
Self-assembled, vertically-aligned La2/3Sr1/3MnO3ZnO nanocomposites, inwhich La2/3Sr1/3MnO3 (LSMO) matrix and ZnO nanopillars form anintertwined structure with coincident-site-matched growth occurring between theLSMO and ZnO vertical interfaces, may offer new MRAM<missing VAR> applications by combiningtheir superior electric, magnetic (B), and optical properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 1, 'uA', 2],[207.0, 10, 'uA', 3]

O
###Electrical-current-induced magnetic hysteresis in self-assembled vertically aligned La_{2/3}Sr_{1/3}MnO_3:ZnO-nanopillar composites|W. Pan,P. Lu,J. F. Ihlefeld,S. R. Lee,E. S. Choi,Y. Jiang,Q. X. Jia###
(1480051, 1480051)
Self-assembled, vertically-aligned La2/3Sr1/3MnO3ZnO nanocomposites, inwhich La2/3Sr1/3MnO3 (LSMO) matrix and ZnO nanopillars form anintertwined structure with coincident-site-matched growth occurring between theLSMO and ZnO vertical interfaces, may offer new MRAM<missing VAR> applications by combiningtheir superior electric, magnetic (B), and optical properties.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 1, 'uA', 2],[174.0, 10, 'uA', 3]

ZnO
###Electrical-current-induced magnetic hysteresis in self-assembled vertically aligned La_{2/3}Sr_{1/3}MnO_3:ZnO-nanopillar composites|W. Pan,P. Lu,J. F. Ihlefeld,S. R. Lee,E. S. Choi,Y. Jiang,Q. X. Jia###
(1480055, 1480056)
Self-assembled, vertically-aligned La2/3Sr1/3MnO3ZnO nanocomposites, inwhich La2/3Sr1/3MnO3 (LSMO) matrix and ZnO nanopillars form anintertwined structure with coincident-site-matched growth occurring between theLSMO and ZnO vertical interfaces, may offer new MRAM<missing VAR> applications by combiningtheir superior electric, magnetic (B), and optical properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 1, 'uA', 2],[169.0, 10, 'uA', 3]

(B)
###Electrical-current-induced magnetic hysteresis in self-assembled vertically aligned La_{2/3}Sr_{1/3}MnO_3:ZnO-nanopillar composites|W. Pan,P. Lu,J. F. Ihlefeld,S. R. Lee,E. S. Choi,Y. Jiang,Q. X. Jia###
(1480090, 1480092)
Self-assembled, vertically-aligned La2/3Sr1/3MnO3ZnO nanocomposites, inwhich La2/3Sr1/3MnO3 (LSMO) matrix and ZnO nanopillars form anintertwined structure with coincident-site-matched growth occurring between theLSMO and ZnO vertical interfaces, may offer new MRAM<missing VAR> applications by combiningtheir superior electric, magnetic (B), and optical properties.
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 1, 'uA', 2],[133.0, 10, 'uA', 3]

In
###Electrical-current-induced magnetic hysteresis in self-assembled vertically aligned La_{2/3}Sr_{1/3}MnO_3:ZnO-nanopillar composites|W. Pan,P. Lu,J. F. Ihlefeld,S. R. Lee,E. S. Choi,Y. Jiang,Q. X. Jia###
(1480102, 1480102)
 In this paper,we show the results of electrical current induced magnetic hysteresis inmagneto-resistance measurements in these nano-pillar composites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 1, 'uA', 1],[123.0, 10, 'uA', 2]

B
###Electrical-current-induced magnetic hysteresis in self-assembled vertically aligned La_{2/3}Sr_{1/3}MnO_3:ZnO-nanopillar composites|W. Pan,P. Lu,J. F. Ihlefeld,S. R. Lee,E. S. Choi,Y. Jiang,Q. X. Jia###
(1480198, 1480198)
 We observethat when the current level is low, for example, 1 uA, the magneto-resistancedisplays a linear, negative, non-hysteretic B field dependence.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 1, 'uA', 0],[27.0, 10, 'uA', 1]

I
###Electrical-current-induced magnetic hysteresis in self-assembled vertically aligned La_{2/3}Sr_{1/3}MnO_3:ZnO-nanopillar composites|W. Pan,P. Lu,J. F. Ihlefeld,S. R. Lee,E. S. Choi,Y. Jiang,Q. X. Jia###
(1480222, 1480222)
 Surprisingly,when a large current is used, I > 10 uA, a hysteretic behavior is observed whenthe B field is swept in the up and down directions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 1, 'uA', 1],[3.0, 10, 'uA', 0]

B
###Electrical-current-induced magnetic hysteresis in self-assembled vertically aligned La_{2/3}Sr_{1/3}MnO_3:ZnO-nanopillar composites|W. Pan,P. Lu,J. F. Ihlefeld,S. R. Lee,E. S. Choi,Y. Jiang,Q. X. Jia###
(1480243, 1480243)
 Surprisingly,when a large current is used, I > 10 uA, a hysteretic behavior is observed whenthe B field is swept in the up and down directions.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 1, 'uA', 1],[18.0, 10, 'uA', 0]

SO
###Strain-mediated spin-orbit torque switching for magnetic memory|Qianchang Wang,John Domann,Guoqiang Yu,Anthony Barra,Kang L. Wang,Gregory P. Carman###
(1480354, 1480355)
 Spin-orbit torque (SOT) represents an energy efficient method to controlmagnetization in magnetic memory devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Strain-mediated spin-orbit torque switching for magnetic memory|Qianchang Wang,John Domann,Guoqiang Yu,Anthony Barra,Kang L. Wang,Gregory P. Carman###
(1480460, 1480461)
 Here we present a new approach offield-free deterministic perpendicular switching using a strain-mediated SOT<missing VAR>switching method.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Strain-mediated spin-orbit torque switching for magnetic memory|Qianchang Wang,John Domann,Guoqiang Yu,Anthony Barra,Kang L. Wang,Gregory P. Carman###
(1480539, 1480540)
 A finiteelement model and a macrospin model are used to numerically simulate thestrain-mediated SOT<missing VAR> switching mechanism.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Strain-mediated spin-orbit torque switching for magnetic memory|Qianchang Wang,John Domann,Guoqiang Yu,Anthony Barra,Kang L. Wang,Gregory P. Carman###
(1480569, 1480569)
 The results show that a relativelysmall voltage (pm0.5 V) along with a modest current (3.5 times 107A/cm2) can produce a 180deg perpendicular magnetization reversal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

URu2Si2
###Griffiths phase and symmetry breaking in the hidden-order phase of URu2Si2|Yi Liu,Wen Zhang,Xiaoying Wang,Donghua Xie,Xinchun Lai###
(1480793, 1480797)
Griffiths phase and symmetry breaking in the hidden-order phase of URu2Si2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0
[35.0, 17.5, 'K', 1]

URu2Si2
###Griffiths phase and symmetry breaking in the hidden-order phase of URu2Si2|Yi Liu,Wen Zhang,Xiaoying Wang,Donghua Xie,Xinchun Lai###
(1480808, 1480812)
 The heavy-fermion compound URu2Si2 exhibits a hidden-order phase below thetemperature,  17.5 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0
[20.0, 17.5, 'K', 0]

In
###Griffiths phase and symmetry breaking in the hidden-order phase of URu2Si2|Yi Liu,Wen Zhang,Xiaoying Wang,Donghua Xie,Xinchun Lai###
(1480835, 1480835)
 In spite of intense research for past three decades, noconsensus on the order parameter exists and the nature has posed along-standing mystery.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 17.5, 'K', 1]

In
###Griffiths phase and symmetry breaking in the hidden-order phase of URu2Si2|Yi Liu,Wen Zhang,Xiaoying Wang,Donghua Xie,Xinchun Lai###
(1480957, 1480957)
 In the Griffithsphase scenario, strong evidence are provided for those cluster-like spins, suchas the unique power-law behavior of magnetic susceptibility and specific heatas well as the frequency dispersion of AC susceptibility.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 17.5, 'K', 3]

C
###Griffiths phase and symmetry breaking in the hidden-order phase of URu2Si2|Yi Liu,Wen Zhang,Xiaoying Wang,Donghua Xie,Xinchun Lai###
(1481031, 1481031)
 In the Griffithsphase scenario, strong evidence are provided for those cluster-like spins, suchas the unique power-law behavior of magnetic susceptibility and specific heatas well as the frequency dispersion of AC susceptibility.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[199.0, 17.5, 'K', 3]

In
###Griffiths phase and symmetry breaking in the hidden-order phase of URu2Si2|Yi Liu,Wen Zhang,Xiaoying Wang,Donghua Xie,Xinchun Lai###
(1481036, 1481036)
 In this way, theexistence of an order parameter is excluded, and the hidden order has asignificant kinship with the long-range large-moment antiferromagnetism whichis accessible by tuning the hydrostatic pressure or the chemical pressure(i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[204.0, 17.5, 'K', 4]

Fe
###Griffiths phase and symmetry breaking in the hidden-order phase of URu2Si2|Yi Liu,Wen Zhang,Xiaoying Wang,Donghua Xie,Xinchun Lai###
(1481127, 1481127)
, isoelectronic Fe doping).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[295.0, 17.5, 'K', 5]

URu2Si2
###Griffiths phase and symmetry breaking in the hidden-order phase of URu2Si2|Yi Liu,Wen Zhang,Xiaoying Wang,Donghua Xie,Xinchun Lai###
(1481252, 1481256)
 Thus, the demonstrations of the Griffiths phase as an alternativeproposal for the hidden-order phase of URu2Si2 are very promising, challengingthe understanding of exotic electronic states in correlated matter and quantummaterials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0
[420.0, 17.5, 'K', 8]

(SOC)
###Tunneling magnetoresistance enhancement by symmetrization in spin-orbit torque magnetic tunnel junction|Jiaqi Zhou,Weisheng Zhao,Kaihua Cao,Shouzhong Peng,Zilu Wang,Arnaud Bournel###
(1481341, 1481345)
 Heavy metals with strong spin-orbit coupling (SOC) have been employed togenerate spin current to control the magnetization dynamics by spin-orbittorque (SOT).
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Tunneling magnetoresistance enhancement by symmetrization in spin-orbit torque magnetic tunnel junction|Jiaqi Zhou,Weisheng Zhao,Kaihua Cao,Shouzhong Peng,Zilu Wang,Arnaud Bournel###
(1481382, 1481383)
 Heavy metals with strong spin-orbit coupling (SOC) have been employed togenerate spin current to control the magnetization dynamics by spin-orbittorque (SOT).
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Tunneling magnetoresistance enhancement by symmetrization in spin-orbit torque magnetic tunnel junction|Jiaqi Zhou,Weisheng Zhao,Kaihua Cao,Shouzhong Peng,Zilu Wang,Arnaud Bournel###
(1481398, 1481399)
 Magnetic tunnel junction based on SOT<missing VAR> (SOT-MTJ) is a promisingapplication with efficient writing operation.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Tunneling magnetoresistance enhancement by symmetrization in spin-orbit torque magnetic tunnel junction|Jiaqi Zhou,Weisheng Zhao,Kaihua Cao,Shouzhong Peng,Zilu Wang,Arnaud Bournel###
(1481403, 1481404)
 Magnetic tunnel junction based on SOT<missing VAR> (SOT-MTJ) is a promisingapplication with efficient writing operation.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Tunneling magnetoresistance enhancement by symmetrization in spin-orbit torque magnetic tunnel junction|Jiaqi Zhou,Weisheng Zhao,Kaihua Cao,Shouzhong Peng,Zilu Wang,Arnaud Bournel###
(1481433, 1481434)
 Unfortunately, SOT-MTJ faces thelow tunneling magnetoresistance (TMR) problem.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Tunneling magnetoresistance enhancement by symmetrization in spin-orbit torque magnetic tunnel junction|Jiaqi Zhou,Weisheng Zhao,Kaihua Cao,Shouzhong Peng,Zilu Wang,Arnaud Bournel###
(1481461, 1481461)
 In this work, we present an abinitio calculation on the TMR in SOT-MTJ.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Tunneling magnetoresistance enhancement by symmetrization in spin-orbit torque magnetic tunnel junction|Jiaqi Zhou,Weisheng Zhao,Kaihua Cao,Shouzhong Peng,Zilu Wang,Arnaud Bournel###
(1481491, 1481492)
 In this work, we present an abinitio calculation on the TMR in SOT-MTJ.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Tunneling magnetoresistance enhancement by symmetrization in spin-orbit torque magnetic tunnel junction|Jiaqi Zhou,Weisheng Zhao,Kaihua Cao,Shouzhong Peng,Zilu Wang,Arnaud Bournel###
(1481521, 1481522)
 It is demonstrated that TMR would beenhanced by SOT-MTJ symmetry structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Tunneling magnetoresistance enhancement by symmetrization in spin-orbit torque magnetic tunnel junction|Jiaqi Zhou,Weisheng Zhao,Kaihua Cao,Shouzhong Peng,Zilu Wang,Arnaud Bournel###
(1481548, 1481548)
 The symmetrization induces interfacialresonant states (IR<missing VAR>Ss).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Tunneling magnetoresistance enhancement by symmetrization in spin-orbit torque magnetic tunnel junction|Jiaqi Zhou,Weisheng Zhao,Kaihua Cao,Shouzhong Peng,Zilu Wang,Arnaud Bournel###
(1481556, 1481556)
 When IR<missing VAR>Ss match identical resonances at the oppositebarrier interface, resonant tunneling occurs in SOT-MTJ, which significantlycontributes to the conductance in parallel configuration and improves TMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Tunneling magnetoresistance enhancement by symmetrization in spin-orbit torque magnetic tunnel junction|Jiaqi Zhou,Weisheng Zhao,Kaihua Cao,Shouzhong Peng,Zilu Wang,Arnaud Bournel###
(1481586, 1481587)
 When IR<missing VAR>Ss match identical resonances at the oppositebarrier interface, resonant tunneling occurs in SOT-MTJ, which significantlycontributes to the conductance in parallel configuration and improves TMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Tunneling magnetoresistance enhancement by symmetrization in spin-orbit torque magnetic tunnel junction|Jiaqi Zhou,Weisheng Zhao,Kaihua Cao,Shouzhong Peng,Zilu Wang,Arnaud Bournel###
(1481718, 1481719)
 This workwould benefit the TMR optimization in SOT-MTJ, as well as the SOT<missing VAR> spintronicsdevice.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Tunneling magnetoresistance enhancement by symmetrization in spin-orbit torque magnetic tunnel junction|Jiaqi Zhou,Weisheng Zhao,Kaihua Cao,Shouzhong Peng,Zilu Wang,Arnaud Bournel###
(1481735, 1481736)
 This workwould benefit the TMR optimization in SOT-MTJ, as well as the SOT<missing VAR> spintronicsdevice.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sn1-xIn
###Electron and hole contributions to normal-state transport in the superconducting system Sn$_{1-x}$In$_x$Te|Cheng Zhang,Xu-Gang He,Hang Chi,Ruidan Zhong,Wei Ku,Genda Gu,J. M. Tranquada,Qiang Li###
(1481777, 1481781)
Electron and hole contributions to normal-state transport in the superconducting system Sn1-xInx<missing VAR>Te.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[191.0, 0.25, ';', 4],[237.0, 0.45, ',', 5]

Te
###Electron and hole contributions to normal-state transport in the superconducting system Sn$_{1-x}$In$_x$Te|Cheng Zhang,Xu-Gang He,Hang Chi,Ruidan Zhong,Wei Ku,Genda Gu,J. M. Tranquada,Qiang Li###
(1481783, 1481783)
Electron and hole contributions to normal-state transport in the superconducting system Sn1-xInx<missing VAR>Te.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[189.0, 0.25, ';', 4],[235.0, 0.45, ',', 5]

SnTe
###Electron and hole contributions to normal-state transport in the superconducting system Sn$_{1-x}$In$_x$Te|Cheng Zhang,Xu-Gang He,Hang Chi,Ruidan Zhong,Wei Ku,Genda Gu,J. M. Tranquada,Qiang Li###
(1481790, 1481791)
 Indium-doped SnTe has been of interest because the system can exhibit bothtopological surface states and bulk superconductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 0.25, ';', 3],[227.0, 0.45, ',', 4]

Sn1-xIn
###Electron and hole contributions to normal-state transport in the superconducting system Sn$_{1-x}$In$_x$Te|Cheng Zhang,Xu-Gang He,Hang Chi,Ruidan Zhong,Wei Ku,Genda Gu,J. M. Tranquada,Qiang Li###
(1481900, 1481904)
 We reporta study of magneto-transport in a series of Sn1-xInx<missing VAR>Te single crystalswith 0.1le x<missing VAR> le 0.45.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[68.0, 0.25, ';', 1],[114.0, 0.45, ',', 2]

Te
###Electron and hole contributions to normal-state transport in the superconducting system Sn$_{1-x}$In$_x$Te|Cheng Zhang,Xu-Gang He,Hang Chi,Ruidan Zhong,Wei Ku,Genda Gu,J. M. Tranquada,Qiang Li###
(1481906, 1481906)
 We reporta study of magneto-transport in a series of Sn1-xInx<missing VAR>Te single crystalswith 0.1le x<missing VAR> le 0.45.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 0.25, ';', 1],[112.0, 0.45, ',', 2]

In
###Electron and hole contributions to normal-state transport in the superconducting system Sn$_{1-x}$In$_x$Te|Cheng Zhang,Xu-Gang He,Hang Chi,Ruidan Zhong,Wei Ku,Genda Gu,J. M. Tranquada,Qiang Li###
(1481991, 1481991)
 From measurements of the Hall effect, we find thatthe dominant carrier type changes from hole-like to electron-like atx<missing VAR>sim0.25; one would expect electron-like carriers if the In ions have avalence of 3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 0.25, ';', 0],[27.0, 0.45, ',', 1]

In
###Electron and hole contributions to normal-state transport in the superconducting system Sn$_{1-x}$In$_x$Te|Cheng Zhang,Xu-Gang He,Hang Chi,Ruidan Zhong,Wei Ku,Genda Gu,J. M. Tranquada,Qiang Li###
(1482061, 1482061)
 In measurements ofmagnetoresistance, we find evidence for weak anti-localization (WAL).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 0.25, ';', 2],[43.0, 0.45, ',', 1]

W
###Electron and hole contributions to normal-state transport in the superconducting system Sn$_{1-x}$In$_x$Te|Cheng Zhang,Xu-Gang He,Hang Chi,Ruidan Zhong,Wei Ku,Genda Gu,J. M. Tranquada,Qiang Li###
(1482086, 1482086)
 In measurements ofmagnetoresistance, we find evidence for weak anti-localization (WAL).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 0.25, ';', 2],[68.0, 0.45, ',', 1]

W
###Electron and hole contributions to normal-state transport in the superconducting system Sn$_{1-x}$In$_x$Te|Cheng Zhang,Xu-Gang He,Hang Chi,Ruidan Zhong,Wei Ku,Genda Gu,J. M. Tranquada,Qiang Li###
(1482109, 1482109)
 Weattribute both the quantum oscillations and the WAL<missing VAR> to bulk Dirac-like holepockets, previously observed in photoemission studies, which coexist with thedominant electron-like carriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 0.25, ';', 3],[91.0, 0.45, ',', 2]

Tc
###Hall coefficient and magnetoresistance in boson+fermion dimer models for the pseudogap phase of high Tc superconductors|Garry Goldstein###
(1482193, 1482193)
Hall coefficient and magnetoresistance in bosonfermion dimer models for the pseudogap phase of high Tc superconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Hall coefficient and magnetoresistance in boson+fermion dimer models for the pseudogap phase of high Tc superconductors|Garry Goldstein###
(1482432, 1482432)
 We show that this is an effect of the changing of thesign of the coupling between the fermionic dimer and the magnetic field fromnegative coupling -e<missing VAR> at low temperatures to positive coupling e<missing VAR> at hightemperature, with the Hall coefficient being proportional to RHeBeEeJ(the product of the magnetic charge, electric charge and current charge all ofwhich we carefully define).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Hall coefficient and magnetoresistance in boson+fermion dimer models for the pseudogap phase of high Tc superconductors|Garry Goldstein###
(1482534, 1482534)
 We relate the Hall conductivity to the coefficientin Kohlers<missing VAR> like rule for magnetoconductivity and calculate some correctionswhich are relevant near the intermediate temperature range 50K (typical valuesfor the cyclotron frequency of the dimers).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B2
###Hall coefficient and magnetoresistance in boson+fermion dimer models for the pseudogap phase of high Tc superconductors|Garry Goldstein###
(1482585, 1482586)
 Furthermore we make a sharpprediction that the magnetoresistance effect vanishes to order B2 at thetemperature and magnetic field where the Hall coefficient vanishes.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Magnetometric Mapping of Superconducting RF Cavities|B. Schmitz,J. Köszegi,K. Alomari,O. Kugeler,J. Knobloch###
(1482629, 1482629)
Magnetometric Mapping of Superconducting R<missing VAR>F Cavities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 3, 'D', 2],[146.0, 1.3, 'GHz', 4],[191.0, 500, 'Hz', 5],[242.0, 14, 'mA', 6],[249.0, 17, 'nT', 6]

F
###Magnetometric Mapping of Superconducting RF Cavities|B. Schmitz,J. Köszegi,K. Alomari,O. Kugeler,J. Knobloch###
(1482647, 1482647)
 A scalable mapping system for superconducting R<missing VAR>F cavities is presented.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 3, 'D', 1],[128.0, 1.3, 'GHz', 3],[173.0, 500, 'Hz', 4],[224.0, 14, 'mA', 5],[231.0, 17, 'nT', 5]

S
###Magnetometric Mapping of Superconducting RF Cavities|B. Schmitz,J. Köszegi,K. Alomari,O. Kugeler,J. Knobloch###
(1482779, 1482779)
 The system was developed for a single cell 1.3 GHz TESL<missing VAR>A-typecavity, but can be easily adopted to arbitrary other cavity types.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 3, 'D', 2],[4.0, 1.3, 'GHz', 0],[41.0, 500, 'Hz', 1],[92.0, 14, 'mA', 2],[99.0, 17, 'nT', 2]

S
###Magnetometric Mapping of Superconducting RF Cavities|B. Schmitz,J. Köszegi,K. Alomari,O. Kugeler,J. Knobloch###
(1482906, 1482906)
 While temperaturemapping is a well known technique in SR<missing VAR>F research, the integration of magneticfield mapping opens the possibility of detailed studies of trapped magneticflux and its impact on the surface resistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[235.0, 3, 'D', 5],[131.0, 1.3, 'GHz', 3],[86.0, 500, 'Hz', 2],[35.0, 14, 'mA', 1],[28.0, 17, 'nT', 1]

F
###Magnetometric Mapping of Superconducting RF Cavities|B. Schmitz,J. Köszegi,K. Alomari,O. Kugeler,J. Knobloch###
(1482908, 1482908)
 While temperaturemapping is a well known technique in SR<missing VAR>F research, the integration of magneticfield mapping opens the possibility of detailed studies of trapped magneticflux and its impact on the surface resistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[237.0, 3, 'D', 5],[133.0, 1.3, 'GHz', 3],[88.0, 500, 'Hz', 2],[37.0, 14, 'mA', 1],[30.0, 17, 'nT', 1]

WP2
###Extremely large magnetoresistance in topologically trivial semimetal $α$-WP$_2$|Jianhua Du,Zhefeng Lou,ShengNan Zhang,Yuxing Zhou,Binjie Xu,Qin Chen,Yanqing Tang,Shuijin Chen,Huancheng Chen,Qinqing Zhu,Hangdong Wang,Jinhu Yang,quanSheng Wu,Oleg V. Yazyev,Minghu Fang###
(1483078, 1483080)
Extremely large magnetoresistance in topologically trivial semimetal -WP2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WP2
###Extremely large magnetoresistance in topologically trivial semimetal $α$-WP$_2$|Jianhua Du,Zhefeng Lou,ShengNan Zhang,Yuxing Zhou,Binjie Xu,Qin Chen,Yanqing Tang,Shuijin Chen,Huancheng Chen,Qinqing Zhu,Hangdong Wang,Jinhu Yang,quanSheng Wu,Oleg V. Yazyev,Minghu Fang###
(1483167, 1483169)
 Here, wereport an investigation of the alpha-phase WP2, a topologically trivialsemimetal with monoclinic crystal structure (C2/m), which contrasts to therecently discovered robust type-II Weyl semimetal phase in beta-WP2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C2
###Extremely large magnetoresistance in topologically trivial semimetal $α$-WP$_2$|Jianhua Du,Zhefeng Lou,ShengNan Zhang,Yuxing Zhou,Binjie Xu,Qin Chen,Yanqing Tang,Shuijin Chen,Huancheng Chen,Qinqing Zhu,Hangdong Wang,Jinhu Yang,quanSheng Wu,Oleg V. Yazyev,Minghu Fang###
(1483190, 1483191)
 Here, wereport an investigation of the alpha-phase WP2, a topologically trivialsemimetal with monoclinic crystal structure (C2/m), which contrasts to therecently discovered robust type-II Weyl semimetal phase in beta-WP2.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Extremely large magnetoresistance in topologically trivial semimetal $α$-WP$_2$|Jianhua Du,Zhefeng Lou,ShengNan Zhang,Yuxing Zhou,Binjie Xu,Qin Chen,Yanqing Tang,Shuijin Chen,Huancheng Chen,Qinqing Zhu,Hangdong Wang,Jinhu Yang,quanSheng Wu,Oleg V. Yazyev,Minghu Fang###
(1483214, 1483215)
 Here, wereport an investigation of the alpha-phase WP2, a topologically trivialsemimetal with monoclinic crystal structure (C2/m), which contrasts to therecently discovered robust type-II Weyl semimetal phase in beta-WP2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WP2
###Extremely large magnetoresistance in topologically trivial semimetal $α$-WP$_2$|Jianhua Du,Zhefeng Lou,ShengNan Zhang,Yuxing Zhou,Binjie Xu,Qin Chen,Yanqing Tang,Shuijin Chen,Huancheng Chen,Qinqing Zhu,Hangdong Wang,Jinhu Yang,quanSheng Wu,Oleg V. Yazyev,Minghu Fang###
(1483227, 1483229)
 Here, wereport an investigation of the alpha-phase WP2, a topologically trivialsemimetal with monoclinic crystal structure (C2/m), which contrasts to therecently discovered robust type-II Weyl semimetal phase in beta-WP2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WP2
###Extremely large magnetoresistance in topologically trivial semimetal $α$-WP$_2$|Jianhua Du,Zhefeng Lou,ShengNan Zhang,Yuxing Zhou,Binjie Xu,Qin Chen,Yanqing Tang,Shuijin Chen,Huancheng Chen,Qinqing Zhu,Hangdong Wang,Jinhu Yang,quanSheng Wu,Oleg V. Yazyev,Minghu Fang###
(1483241, 1483243)
 Wefound that alpha-WP2 exhibits almost all the characteristics of XMRmaterials the near-quadratic field dependence of MR, a field-induced up-turnin resistivity following by a plateau at low temperature, which can beunderstood by the compensation effect, and high mobility of carriers confirmedby our Hall effect measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WP2
###Extremely large magnetoresistance in topologically trivial semimetal $α$-WP$_2$|Jianhua Du,Zhefeng Lou,ShengNan Zhang,Yuxing Zhou,Binjie Xu,Qin Chen,Yanqing Tang,Shuijin Chen,Huancheng Chen,Qinqing Zhu,Hangdong Wang,Jinhu Yang,quanSheng Wu,Oleg V. Yazyev,Minghu Fang###
(1483393, 1483395)
 It was also found that the normalized M<missing VAR>Rsunder different magnetic fields has the same temperature dependence inalpha-WP2, the Kohler scaling law can describe the MR data in a widetemperature range, and there is no obvious change in the anisotropic parametergamma value with temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WP2
###Extremely large magnetoresistance in topologically trivial semimetal $α$-WP$_2$|Jianhua Du,Zhefeng Lou,ShengNan Zhang,Yuxing Zhou,Binjie Xu,Qin Chen,Yanqing Tang,Shuijin Chen,Huancheng Chen,Qinqing Zhu,Hangdong Wang,Jinhu Yang,quanSheng Wu,Oleg V. Yazyev,Minghu Fang###
(1483566, 1483568)
 These results indicate that bothfield-induced-gap and temperature-induced Lifshitz transition are not theorigin of up-turn in resistivity in the alpha-WP2 semimetal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WP2
###Extremely large magnetoresistance in topologically trivial semimetal $α$-WP$_2$|Jianhua Du,Zhefeng Lou,ShengNan Zhang,Yuxing Zhou,Binjie Xu,Qin Chen,Yanqing Tang,Shuijin Chen,Huancheng Chen,Qinqing Zhu,Hangdong Wang,Jinhu Yang,quanSheng Wu,Oleg V. Yazyev,Minghu Fang###
(1483582, 1483584)
 Our findingsestablish alpha-WP2 as a new reference material for exploring the XMRphenomena.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaNiO3
###Tuning spin one channel to exotic orbital two-channel Kondo effect in ferrimagnetic composites of LaNiO3 and CoFe2O4|Ananya Patra,Krishna Prasad Maity,Ramesh B Kamble,V Prasad###
(1483648, 1483651)
Tuning spin one channel to exotic orbital two-channel Kondo effect in ferrimagnetic composites of LaNiO3 and CoFe2O4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[254.0, 15, '%', 4],[328.0, 2, 'CK', 4],[336.0, 2, 'CK', 5],[452.0, 30, 'K', 6]

CoFe2O4
###Tuning spin one channel to exotic orbital two-channel Kondo effect in ferrimagnetic composites of LaNiO3 and CoFe2O4|Ananya Patra,Krishna Prasad Maity,Ramesh B Kamble,V Prasad###
(1483655, 1483659)
Tuning spin one channel to exotic orbital two-channel Kondo effect in ferrimagnetic composites of LaNiO3 and CoFe2O4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[246.0, 15, '%', 4],[320.0, 2, 'CK', 4],[328.0, 2, 'CK', 5],[444.0, 30, 'K', 6]

K
###Tuning spin one channel to exotic orbital two-channel Kondo effect in ferrimagnetic composites of LaNiO3 and CoFe2O4|Ananya Patra,Krishna Prasad Maity,Ramesh B Kamble,V Prasad###
(1483681, 1483681)
 We report the tuning from spin one channel (1CK) to orbital two-channel Kondo(2CK) effect by varying CoFe2O4 (CFO) content in the composites with LaNiO3(L<missing VAR>NO) along with the presence of ferrimagnetism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[224.0, 15, '%', 3],[298.0, 2, 'CK', 3],[306.0, 2, 'CK', 4],[422.0, 30, 'K', 5]

K
###Tuning spin one channel to exotic orbital two-channel Kondo effect in ferrimagnetic composites of LaNiO3 and CoFe2O4|Ananya Patra,Krishna Prasad Maity,Ramesh B Kamble,V Prasad###
(1483698, 1483698)
 We report the tuning from spin one channel (1CK) to orbital two-channel Kondo(2CK) effect by varying CoFe2O4 (CFO) content in the composites with LaNiO3(L<missing VAR>NO) along with the presence of ferrimagnetism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[207.0, 15, '%', 3],[281.0, 2, 'CK', 3],[289.0, 2, 'CK', 4],[405.0, 30, 'K', 5]

CoFe2O4
###Tuning spin one channel to exotic orbital two-channel Kondo effect in ferrimagnetic composites of LaNiO3 and CoFe2O4|Ananya Patra,Krishna Prasad Maity,Ramesh B Kamble,V Prasad###
(1483707, 1483711)
 We report the tuning from spin one channel (1CK) to orbital two-channel Kondo(2CK) effect by varying CoFe2O4 (CFO) content in the composites with LaNiO3(L<missing VAR>NO) along with the presence of ferrimagnetism.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[194.0, 15, '%', 3],[268.0, 2, 'CK', 3],[276.0, 2, 'CK', 4],[392.0, 30, 'K', 5]

(CFO)
###Tuning spin one channel to exotic orbital two-channel Kondo effect in ferrimagnetic composites of LaNiO3 and CoFe2O4|Ananya Patra,Krishna Prasad Maity,Ramesh B Kamble,V Prasad###
(1483713, 1483717)
 We report the tuning from spin one channel (1CK) to orbital two-channel Kondo(2CK) effect by varying CoFe2O4 (CFO) content in the composites with LaNiO3(L<missing VAR>NO) along with the presence of ferrimagnetism.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 15, '%', 3],[262.0, 2, 'CK', 3],[270.0, 2, 'CK', 4],[386.0, 30, 'K', 5]

LaNiO3
###Tuning spin one channel to exotic orbital two-channel Kondo effect in ferrimagnetic composites of LaNiO3 and CoFe2O4|Ananya Patra,Krishna Prasad Maity,Ramesh B Kamble,V Prasad###
(1483729, 1483732)
 We report the tuning from spin one channel (1CK) to orbital two-channel Kondo(2CK) effect by varying CoFe2O4 (CFO) content in the composites with LaNiO3(L<missing VAR>NO) along with the presence of ferrimagnetism.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 15, '%', 3],[247.0, 2, 'CK', 3],[255.0, 2, 'CK', 4],[371.0, 30, 'K', 5]

O
###Tuning spin one channel to exotic orbital two-channel Kondo effect in ferrimagnetic composites of LaNiO3 and CoFe2O4|Ananya Patra,Krishna Prasad Maity,Ramesh B Kamble,V Prasad###
(1483738, 1483738)
 We report the tuning from spin one channel (1CK) to orbital two-channel Kondo(2CK) effect by varying CoFe2O4 (CFO) content in the composites with LaNiO3(L<missing VAR>NO) along with the presence of ferrimagnetism.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 15, '%', 3],[241.0, 2, 'CK', 3],[249.0, 2, 'CK', 4],[365.0, 30, 'K', 5]

NO
###Tuning spin one channel to exotic orbital two-channel Kondo effect in ferrimagnetic composites of LaNiO3 and CoFe2O4|Ananya Patra,Krishna Prasad Maity,Ramesh B Kamble,V Prasad###
(1483780, 1483781)
 Although there is no signatureof resistivity upturn in case of pure L<missing VAR>NO, all the composites exhibit adistinct upturn in the temperature range 30-80 K.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 15, '%', 2],[198.0, 2, 'CK', 2],[206.0, 2, 'CK', 3],[322.0, 30, 'K', 4]

K
###Tuning spin one channel to exotic orbital two-channel Kondo effect in ferrimagnetic composites of LaNiO3 and CoFe2O4|Ananya Patra,Krishna Prasad Maity,Ramesh B Kamble,V Prasad###
(1483811, 1483811)
 Although there is no signatureof resistivity upturn in case of pure L<missing VAR>NO, all the composites exhibit adistinct upturn in the temperature range 30-80 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 15, '%', 2],[168.0, 2, 'CK', 2],[176.0, 2, 'CK', 3],[292.0, 30, 'K', 4]

CFO
###Tuning spin one channel to exotic orbital two-channel Kondo effect in ferrimagnetic composites of LaNiO3 and CoFe2O4|Ananya Patra,Krishna Prasad Maity,Ramesh B Kamble,V Prasad###
(1483827, 1483829)
 For composite with lowerpercentage of CFO (10 %), the electron spin plays the key role in the emergenceof resistivity upturn which is affected by external magnetic field.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 15, '%', 1],[150.0, 2, 'CK', 1],[158.0, 2, 'CK', 2],[274.0, 30, 'K', 3]

CFO
###Tuning spin one channel to exotic orbital two-channel Kondo effect in ferrimagnetic composites of LaNiO3 and CoFe2O4|Ananya Patra,Krishna Prasad Maity,Ramesh B Kamble,V Prasad###
(1483894, 1483896)
 On theother hand, when the CFO content is increased (15%), the upturn shows strongrobustness against high magnetic field (14 T) and a crossover in temperaturevariation from lnT<missing VAR> to T<missing VAR>1/2 at the Kondo temperature, indicating the appearanceof orbital 2CK effect.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 15, '%', 0],[83.0, 2, 'CK', 0],[91.0, 2, 'CK', 1],[207.0, 30, 'K', 2]

NO
###Tuning spin one channel to exotic orbital two-channel Kondo effect in ferrimagnetic composites of LaNiO3 and CoFe2O4|Ananya Patra,Krishna Prasad Maity,Ramesh B Kamble,V Prasad###
(1484045, 1484046)
 The orbital 2CK effect is originated due to thescattering of conduction electrons from the structural two-level systems whichis created at the interfaces between the two phases (L<missing VAR>NO and CFO) of differentcrystal structures as well as inside the crystal planes.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 15, '%', 1],[66.0, 2, 'CK', 1],[58.0, 2, 'CK', 0],[57.0, 30, 'K', 1]

O
###Tuning spin one channel to exotic orbital two-channel Kondo effect in ferrimagnetic composites of LaNiO3 and CoFe2O4|Ananya Patra,Krishna Prasad Maity,Ramesh B Kamble,V Prasad###
(1484052, 1484052)
 The orbital 2CK effect is originated due to thescattering of conduction electrons from the structural two-level systems whichis created at the interfaces between the two phases (L<missing VAR>NO and CFO) of differentcrystal structures as well as inside the crystal planes.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 15, '%', 1],[73.0, 2, 'CK', 1],[65.0, 2, 'CK', 0],[51.0, 30, 'K', 1]

CFO
###Tuning spin one channel to exotic orbital two-channel Kondo effect in ferrimagnetic composites of LaNiO3 and CoFe2O4|Ananya Patra,Krishna Prasad Maity,Ramesh B Kamble,V Prasad###
(1484137, 1484139)
 A negativemagnetoresistance (MR) is observed at low temperature (< 30 K) for compositescontaining both lower (10 %) and higher percentage (15 %) of CFO.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[232.0, 15, '%', 2],[158.0, 2, 'CK', 2],[150.0, 2, 'CK', 1],[34.0, 30, 'K', 0]

SrMnO3/SrIrO3
###Emergent Magnetism at the 3$d$-5$d$ Interface: SrMnO$_3/$SrIrO$_3$|Sayantika Bhowal,Sashi Satpathy###
(1484218, 1484226)
Emergent Magnetism at the 3d<missing VAR>-5d<missing VAR> Interface SrMnO3/SrIrO3.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

SrMnO3
###Emergent Magnetism at the 3$d$-5$d$ Interface: SrMnO$_3/$SrIrO$_3$|Sayantika Bhowal,Sashi Satpathy###
(1484285, 1484288)
 Recent experiments have found new magnetic behaviors, which are differentfrom the parent bulk materials, at the interfaces between 3d<missing VAR> and 5d<missing VAR> oxidessuch as SrMnO3 (SM<missing VAR>O) and SrIrO3 (SIO).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Emergent Magnetism at the 3$d$-5$d$ Interface: SrMnO$_3/$SrIrO$_3$|Sayantika Bhowal,Sashi Satpathy###
(1484291, 1484291)
 Recent experiments have found new magnetic behaviors, which are differentfrom the parent bulk materials, at the interfaces between 3d<missing VAR> and 5d<missing VAR> oxidessuch as SrMnO3 (SM<missing VAR>O) and SrIrO3 (SIO).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Emergent Magnetism at the 3$d$-5$d$ Interface: SrMnO$_3/$SrIrO$_3$|Sayantika Bhowal,Sashi Satpathy###
(1484293, 1484293)
 Recent experiments have found new magnetic behaviors, which are differentfrom the parent bulk materials, at the interfaces between 3d<missing VAR> and 5d<missing VAR> oxidessuch as SrMnO3 (SM<missing VAR>O) and SrIrO3 (SIO).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrIrO3
###Emergent Magnetism at the 3$d$-5$d$ Interface: SrMnO$_3/$SrIrO$_3$|Sayantika Bhowal,Sashi Satpathy###
(1484298, 1484301)
 Recent experiments have found new magnetic behaviors, which are differentfrom the parent bulk materials, at the interfaces between 3d<missing VAR> and 5d<missing VAR> oxidessuch as SrMnO3 (SM<missing VAR>O) and SrIrO3 (SIO).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(SIO)
###Emergent Magnetism at the 3$d$-5$d$ Interface: SrMnO$_3/$SrIrO$_3$|Sayantika Bhowal,Sashi Satpathy###
(1484303, 1484307)
 Recent experiments have found new magnetic behaviors, which are differentfrom the parent bulk materials, at the interfaces between 3d<missing VAR> and 5d<missing VAR> oxidessuch as SrMnO3 (SM<missing VAR>O) and SrIrO3 (SIO).
Featurization successful!
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Emergent Magnetism at the 3$d$-5$d$ Interface: SrMnO$_3/$SrIrO$_3$|Sayantika Bhowal,Sashi Satpathy###
(1484365, 1484365)
 The system is of considerableinterest due to the strong spin-orbit coupling in the 5d<missing VAR> materials on onehand and the double exchange physics in SM<missing VAR>O on the other, which belongs to theclass of the colossal magnetoresistive (CMR) manganites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Emergent Magnetism at the 3$d$-5$d$ Interface: SrMnO$_3/$SrIrO$_3$|Sayantika Bhowal,Sashi Satpathy###
(1484367, 1484367)
 The system is of considerableinterest due to the strong spin-orbit coupling in the 5d<missing VAR> materials on onehand and the double exchange physics in SM<missing VAR>O on the other, which belongs to theclass of the colossal magnetoresistive (CMR) manganites.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Emergent Magnetism at the 3$d$-5$d$ Interface: SrMnO$_3/$SrIrO$_3$|Sayantika Bhowal,Sashi Satpathy###
(1484396, 1484396)
 The system is of considerableinterest due to the strong spin-orbit coupling in the 5d<missing VAR> materials on onehand and the double exchange physics in SM<missing VAR>O on the other, which belongs to theclass of the colossal magnetoresistive (CMR) manganites.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Emergent Magnetism at the 3$d$-5$d$ Interface: SrMnO$_3/$SrIrO$_3$|Sayantika Bhowal,Sashi Satpathy###
(1484404, 1484404)
 In order to gaininsight into the physics of the system, we have performed density-functionalstudies on a selected interface structure, viz.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Emergent Magnetism at the 3$d$-5$d$ Interface: SrMnO$_3/$SrIrO$_3$|Sayantika Bhowal,Sashi Satpathy###
(1484459, 1484459)
, the (SM<missing VAR>O)1(SIO)1superlattice, which has been experimentally grown and studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Emergent Magnetism at the 3$d$-5$d$ Interface: SrMnO$_3/$SrIrO$_3$|Sayantika Bhowal,Sashi Satpathy###
(1484461, 1484461)
, the (SM<missing VAR>O)1(SIO)1superlattice, which has been experimentally grown and studied.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(SIO)1
###Emergent Magnetism at the 3$d$-5$d$ Interface: SrMnO$_3/$SrIrO$_3$|Sayantika Bhowal,Sashi Satpathy###
(1484464, 1484469)
, the (SM<missing VAR>O)1(SIO)1superlattice, which has been experimentally grown and studied.
Featurization successful!
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SIO
###Emergent Magnetism at the 3$d$-5$d$ Interface: SrMnO$_3/$SrIrO$_3$|Sayantika Bhowal,Sashi Satpathy###
(1484534, 1484536)
 Ourdensity-functional results show that the interfacial magnetism is controlled bya net charge transfer at the interface from the SIO to the SM<missing VAR>O side, turningboth of them into ferromagnetic metal from the original antiferromagneticinsulating state in the bulk.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Emergent Magnetism at the 3$d$-5$d$ Interface: SrMnO$_3/$SrIrO$_3$|Sayantika Bhowal,Sashi Satpathy###
(1484542, 1484542)
 Ourdensity-functional results show that the interfacial magnetism is controlled bya net charge transfer at the interface from the SIO to the SM<missing VAR>O side, turningboth of them into ferromagnetic metal from the original antiferromagneticinsulating state in the bulk.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Emergent Magnetism at the 3$d$-5$d$ Interface: SrMnO$_3/$SrIrO$_3$|Sayantika Bhowal,Sashi Satpathy###
(1484544, 1484544)
 Ourdensity-functional results show that the interfacial magnetism is controlled bya net charge transfer at the interface from the SIO to the SM<missing VAR>O side, turningboth of them into ferromagnetic metal from the original antiferromagneticinsulating state in the bulk.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Emergent Magnetism at the 3$d$-5$d$ Interface: SrMnO$_3/$SrIrO$_3$|Sayantika Bhowal,Sashi Satpathy###
(1484594, 1484594)
 The transferred electrons to the SM<missing VAR>O side make itferromagnetic through the Anderson-Hasegawa double exchange interaction, whilethe SIO part becomes ferromagnetic due to the doping of the half-filledMott-Hubbard insulator as suggested by the Nagaoka Theorem.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Emergent Magnetism at the 3$d$-5$d$ Interface: SrMnO$_3/$SrIrO$_3$|Sayantika Bhowal,Sashi Satpathy###
(1484596, 1484596)
 The transferred electrons to the SM<missing VAR>O side make itferromagnetic through the Anderson-Hasegawa double exchange interaction, whilethe SIO part becomes ferromagnetic due to the doping of the half-filledMott-Hubbard insulator as suggested by the Nagaoka Theorem.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SIO
###Emergent Magnetism at the 3$d$-5$d$ Interface: SrMnO$_3/$SrIrO$_3$|Sayantika Bhowal,Sashi Satpathy###
(1484627, 1484629)
 The transferred electrons to the SM<missing VAR>O side make itferromagnetic through the Anderson-Hasegawa double exchange interaction, whilethe SIO part becomes ferromagnetic due to the doping of the half-filledMott-Hubbard insulator as suggested by the Nagaoka Theorem.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Current Controlled Magnetization Switching in Cylindrical Nanowires for High-Density 3D Memory Applications|Hanan Mohammed,Hector Corte-León,Yurii P. Ivanov,Sergei Lopatin,Julian A. Moreno,Andrey Chuvilin,Akshaykumar Salimath,Aurelien Manchon,Olga Kazakova,Jurgen Kosel###
(1484777, 1484777)
 In this letter, domainwalls are studied in cylindrical nanowires consisting of alternating segmentsof cobalt and nickel.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 3, 'D', 2]

Ds
###Asymmetric Coulomb Oscillation and Giant Anisotropic Magnetoresistance in Doped Graphene Nanojunctions|Subramani Amutha,Arijit Sen###
(1485239, 1485239)
 Subsequently we explore the effect ofsubstitutional doping of transition metal atoms in zigzag graphene nanodots(z-GNDs) on the charge transport under non-collinear magnetization.
EXCEPTION 3: IndexError for Ds
NDs
[77.0, 700, '%', 1],[185.0, 3, 'nm', 2],[188.0, 1, 'nm', 2]

EuAg4As2
###Structural distortion and incommensurate noncollinear magnetism in EuAg4As2|Bing Shen,Chaowei Hu,Huibo Cao,Xin Gui,Eve Emmanouilidou,Weiwei Xie,Ni Ni###
(1485543, 1485547)
Structural distortion and incommensurate noncollinear magnetism in EuAg4As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 120, 'K', 3],[161.0, 0, ',', 3],[164.0, 0.25, ',', 3],[177.0, 0.25, ',', 3],[180.0, 0, ',', 3],[190.0, 9, 'K', 4],[193.0, 15, 'K', 4],[236.0, 9, 'K', 5],[272.0, 0, ',', 5],[275.0, 0.1, ',', 5]

EuAg4As2
###Structural distortion and incommensurate noncollinear magnetism in EuAg4As2|Bing Shen,Chaowei Hu,Huibo Cao,Xin Gui,Eve Emmanouilidou,Weiwei Xie,Ni Ni###
(1485626, 1485630)
 Here we report the observation of structural distortion andnoncollinear magnetism in layered pnictide EuAg4As2 via transport,magnetization, single crystal X<missing VAR>-ray and neutron diffraction data.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 120, 'K', 1],[78.0, 0, ',', 1],[81.0, 0.25, ',', 1],[94.0, 0.25, ',', 1],[97.0, 0, ',', 1],[107.0, 9, 'K', 2],[110.0, 15, 'K', 2],[153.0, 9, 'K', 3],[189.0, 0, ',', 3],[192.0, 0.1, ',', 3]

EuAg4As2
###Structural distortion and incommensurate noncollinear magnetism in EuAg4As2|Bing Shen,Chaowei Hu,Huibo Cao,Xin Gui,Eve Emmanouilidou,Weiwei Xie,Ni Ni###
(1485659, 1485663)
EuAg4As2 single crystal shows a structural distortion at 120 K, where twosets of superlattice peaks with the propagation vectors of q<missing VAR>1pm(0, 0.25,0.5) and q<missing VAR>2pm(0.25, 0, 1) emerge.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 120, 'K', 0],[45.0, 0, ',', 0],[48.0, 0.25, ',', 0],[61.0, 0.25, ',', 0],[64.0, 0, ',', 0],[74.0, 9, 'K', 1],[77.0, 15, 'K', 1],[120.0, 9, 'K', 2],[156.0, 0, ',', 2],[159.0, 0.1, ',', 2]

Eu2
###Structural distortion and incommensurate noncollinear magnetism in EuAg4As2|Bing Shen,Chaowei Hu,Huibo Cao,Xin Gui,Eve Emmanouilidou,Weiwei Xie,Ni Ni###
(1485748, 1485749)
 Between 9 K to 15 K, the hexagonalEu2 sub-lattice enters an unpinned state, with magnetic Bragg reflectionspictured as circular-sectors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 120, 'K', 1],[40.0, 0, ',', 1],[37.0, 0.25, ',', 1],[24.0, 0.25, ',', 1],[21.0, 0, ',', 1],[11.0, 9, 'K', 0],[8.0, 15, 'K', 0],[34.0, 9, 'K', 1],[70.0, 0, ',', 1],[73.0, 0.1, ',', 1]

B/Eu2
###Structural distortion and incommensurate noncollinear magnetism in EuAg4As2|Bing Shen,Chaowei Hu,Huibo Cao,Xin Gui,Eve Emmanouilidou,Weiwei Xie,Ni Ni###
(1485873, 1485876)
 Below 9 K, it orders in an incommensuratenoncollinear antiferromagnetic state with a well-defined propagation wavevectorof (0, 0.1, 0.12), where the magnetic structure is helical along the c<missing VAR> axisand cycloidal along the b<missing VAR> axis with a moment of 6.4 muB/Eu2.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[195.0, 120, 'K', 2],[165.0, 0, ',', 2],[162.0, 0.25, ',', 2],[149.0, 0.25, ',', 2],[146.0, 0, ',', 2],[136.0, 9, 'K', 1],[133.0, 15, 'K', 1],[90.0, 9, 'K', 0],[54.0, 0, ',', 0],[51.0, 0.1, ',', 0]

EuAg4As2
###Structural distortion and incommensurate noncollinear magnetism in EuAg4As2|Bing Shen,Chaowei Hu,Huibo Cao,Xin Gui,Eve Emmanouilidou,Weiwei Xie,Ni Ni###
(1485921, 1485925)
Furthermore, rich magnetic phases under magnetic fields, largemagnetoresistance, and strong coupling between charge carriers and magnetism inEuAg4As2 are revealed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[243.0, 120, 'K', 3],[213.0, 0, ',', 3],[210.0, 0.25, ',', 3],[197.0, 0.25, ',', 3],[194.0, 0, ',', 3],[184.0, 9, 'K', 2],[181.0, 15, 'K', 2],[138.0, 9, 'K', 1],[102.0, 0, ',', 1],[99.0, 0.1, ',', 1]

In
###Ionic Tuning of Cobaltites at the Nanoscale|Dustin A. Gilbert,Alexander J. Grutter,Peyton D. Murray,Rajesh V. Chopdekar,Alexander M. Kane,Aleksey L. Ionin,Michael S. Lee,Steven R. Spurgeon,Brian J. Kirby,Brian B. Maranville,Alpha T. N'Diaye,Apurva Mehta,Elke Arenholz,Kai Liu,Yayoi Takamura,Julie A. Borchers###
(1486055, 1486055)
 In this work, we demonstrate a solid-state approach tocontrol of ionic distributions in (La,Sr)CoO3 thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 0.5, 'O', 1],[97.0, 36, 'nm', 2],[377.0, 36, 'nm', 8]

La
###Ionic Tuning of Cobaltites at the Nanoscale|Dustin A. Gilbert,Alexander J. Grutter,Peyton D. Murray,Rajesh V. Chopdekar,Alexander M. Kane,Aleksey L. Ionin,Michael S. Lee,Steven R. Spurgeon,Brian J. Kirby,Brian B. Maranville,Alpha T. N'Diaye,Apurva Mehta,Elke Arenholz,Kai Liu,Yayoi Takamura,Julie A. Borchers###
(1486088, 1486088)
 In this work, we demonstrate a solid-state approach tocontrol of ionic distributions in (La,Sr)CoO3 thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 0.5, 'O', 1],[64.0, 36, 'nm', 2],[344.0, 36, 'nm', 8]

Sr
###Ionic Tuning of Cobaltites at the Nanoscale|Dustin A. Gilbert,Alexander J. Grutter,Peyton D. Murray,Rajesh V. Chopdekar,Alexander M. Kane,Aleksey L. Ionin,Michael S. Lee,Steven R. Spurgeon,Brian J. Kirby,Brian B. Maranville,Alpha T. N'Diaye,Apurva Mehta,Elke Arenholz,Kai Liu,Yayoi Takamura,Julie A. Borchers###
(1486090, 1486090)
 In this work, we demonstrate a solid-state approach tocontrol of ionic distributions in (La,Sr)CoO3 thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 0.5, 'O', 1],[62.0, 36, 'nm', 2],[342.0, 36, 'nm', 8]

CoO3
###Ionic Tuning of Cobaltites at the Nanoscale|Dustin A. Gilbert,Alexander J. Grutter,Peyton D. Murray,Rajesh V. Chopdekar,Alexander M. Kane,Aleksey L. Ionin,Michael S. Lee,Steven R. Spurgeon,Brian J. Kirby,Brian B. Maranville,Alpha T. N'Diaye,Apurva Mehta,Elke Arenholz,Kai Liu,Yayoi Takamura,Julie A. Borchers###
(1486092, 1486094)
 In this work, we demonstrate a solid-state approach tocontrol of ionic distributions in (La,Sr)CoO3 thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 0.5, 'O', 1],[58.0, 36, 'nm', 2],[338.0, 36, 'nm', 8]

Gd
###Ionic Tuning of Cobaltites at the Nanoscale|Dustin A. Gilbert,Alexander J. Grutter,Peyton D. Murray,Rajesh V. Chopdekar,Alexander M. Kane,Aleksey L. Ionin,Michael S. Lee,Steven R. Spurgeon,Brian J. Kirby,Brian B. Maranville,Alpha T. N'Diaye,Apurva Mehta,Elke Arenholz,Kai Liu,Yayoi Takamura,Julie A. Borchers###
(1486105, 1486105)
 Depositing a Gdcapping layer on the perovskite film, oxygen is controllably extracted from thestructure, up-to 0.5 O/u.c.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 0.5, 'O', 0],[47.0, 36, 'nm', 1],[327.0, 36, 'nm', 7]

Co
###Ionic Tuning of Cobaltites at the Nanoscale|Dustin A. Gilbert,Alexander J. Grutter,Peyton D. Murray,Rajesh V. Chopdekar,Alexander M. Kane,Aleksey L. Ionin,Michael S. Lee,Steven R. Spurgeon,Brian J. Kirby,Brian B. Maranville,Alpha T. N'Diaye,Apurva Mehta,Elke Arenholz,Kai Liu,Yayoi Takamura,Julie A. Borchers###
(1486171, 1486171)
 Commensuratewith the oxygen extraction, the Co valence state and saturation magnetizationshow a smooth continuous variation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 0.5, 'O', 2],[19.0, 36, 'nm', 1],[261.0, 36, 'nm', 5]

In
###Ionic Tuning of Cobaltites at the Nanoscale|Dustin A. Gilbert,Alexander J. Grutter,Peyton D. Murray,Rajesh V. Chopdekar,Alexander M. Kane,Aleksey L. Ionin,Michael S. Lee,Steven R. Spurgeon,Brian J. Kirby,Brian B. Maranville,Alpha T. N'Diaye,Apurva Mehta,Elke Arenholz,Kai Liu,Yayoi Takamura,Julie A. Borchers###
(1486195, 1486195)
 In contrast, magnetoresistance measurementsshow no-change in the magnetic anisotropy and a rapid increase in theresistivity over the same range of oxygen stoichiometry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 0.5, 'O', 3],[43.0, 36, 'nm', 2],[237.0, 36, 'nm', 4]

B
###Low-energy band structure and even-odd layer number effect in AB-stacked multilayer graphene|Ryuta Yagi,Taiki Hirahara,Ryoya Ebisuoka,Tomoaki Nakasuga,Shingo Tajima,Kenji Watanabe,Takashi Taniguchi###
(1486495, 1486495)
Low-energy band structure and even-odd layer number effect in AB-stacked multilayer graphene.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Low-energy band structure and even-odd layer number effect in AB-stacked multilayer graphene|Ryuta Yagi,Taiki Hirahara,Ryoya Ebisuoka,Tomoaki Nakasuga,Shingo Tajima,Kenji Watanabe,Takashi Taniguchi###
(1486758, 1486758)
 In particular,an even-odd layer number effect was clearly observed, with the number of bandsincreasing by one for every two layers and a Dirac cone observed only for anodd number of layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###SDW transition of Fe1 zigzag chains and metamagnetic transition of Fe2 in TaFe$_{1+y}$Te$_3$|R. H. Liu,M. Zhang,P. Cheng,Y. J. Yan,Z. J. Xiang,J. J. Ying,X. F. Wang,A. F. Wang,G. J. Ye,X. G. Luo,X. H. Chen###
(1486885, 1486885)
SD<missing VAR>W transition of Fe1 zigzag chains and metamagnetic transition of Fe2 in TaFe1y<missing VAR>Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###SDW transition of Fe1 zigzag chains and metamagnetic transition of Fe2 in TaFe$_{1+y}$Te$_3$|R. H. Liu,M. Zhang,P. Cheng,Y. J. Yan,Z. J. Xiang,J. J. Ying,X. F. Wang,A. F. Wang,G. J. Ye,X. G. Luo,X. H. Chen###
(1486887, 1486887)
SD<missing VAR>W transition of Fe1 zigzag chains and metamagnetic transition of Fe2 in TaFe1y<missing VAR>Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe1
###SDW transition of Fe1 zigzag chains and metamagnetic transition of Fe2 in TaFe$_{1+y}$Te$_3$|R. H. Liu,M. Zhang,P. Cheng,Y. J. Yan,Z. J. Xiang,J. J. Ying,X. F. Wang,A. F. Wang,G. J. Ye,X. G. Luo,X. H. Chen###
(1486893, 1486894)
SD<missing VAR>W transition of Fe1 zigzag chains and metamagnetic transition of Fe2 in TaFe1y<missing VAR>Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe2
###SDW transition of Fe1 zigzag chains and metamagnetic transition of Fe2 in TaFe$_{1+y}$Te$_3$|R. H. Liu,M. Zhang,P. Cheng,Y. J. Yan,Z. J. Xiang,J. J. Ying,X. F. Wang,A. F. Wang,G. J. Ye,X. G. Luo,X. H. Chen###
(1486908, 1486909)
SD<missing VAR>W transition of Fe1 zigzag chains and metamagnetic transition of Fe2 in TaFe1y<missing VAR>Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TaFe1
###SDW transition of Fe1 zigzag chains and metamagnetic transition of Fe2 in TaFe$_{1+y}$Te$_3$|R. H. Liu,M. Zhang,P. Cheng,Y. J. Yan,Z. J. Xiang,J. J. Ying,X. F. Wang,A. F. Wang,G. J. Ye,X. G. Luo,X. H. Chen###
(1486913, 1486915)
SD<missing VAR>W transition of Fe1 zigzag chains and metamagnetic transition of Fe2 in TaFe1y<missing VAR>Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Te3
###SDW transition of Fe1 zigzag chains and metamagnetic transition of Fe2 in TaFe$_{1+y}$Te$_3$|R. H. Liu,M. Zhang,P. Cheng,Y. J. Yan,Z. J. Xiang,J. J. Ying,X. F. Wang,A. F. Wang,G. J. Ye,X. G. Luo,X. H. Chen###
(1486917, 1486918)
SD<missing VAR>W transition of Fe1 zigzag chains and metamagnetic transition of Fe2 in TaFe1y<missing VAR>Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###SDW transition of Fe1 zigzag chains and metamagnetic transition of Fe2 in TaFe$_{1+y}$Te$_3$|R. H. Liu,M. Zhang,P. Cheng,Y. J. Yan,Z. J. Xiang,J. J. Ying,X. F. Wang,A. F. Wang,G. J. Ye,X. G. Luo,X. H. Chen###
(1486930, 1486930)
 We systematically study the AFM<missing VAR> order of Fe1 zigzag chains and spin-flop ofexcess Fe2 under high magnetic field H through the susceptibility,magnetoresistance (MR), Hall effect and specific heat measurements inhigh-quality single crystal TaFe1y<missing VAR>Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe1
###SDW transition of Fe1 zigzag chains and metamagnetic transition of Fe2 in TaFe$_{1+y}$Te$_3$|R. H. Liu,M. Zhang,P. Cheng,Y. J. Yan,Z. J. Xiang,J. J. Ying,X. F. Wang,A. F. Wang,G. J. Ye,X. G. Luo,X. H. Chen###
(1486937, 1486938)
 We systematically study the AFM<missing VAR> order of Fe1 zigzag chains and spin-flop ofexcess Fe2 under high magnetic field H through the susceptibility,magnetoresistance (MR), Hall effect and specific heat measurements inhigh-quality single crystal TaFe1y<missing VAR>Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe2
###SDW transition of Fe1 zigzag chains and metamagnetic transition of Fe2 in TaFe$_{1+y}$Te$_3$|R. H. Liu,M. Zhang,P. Cheng,Y. J. Yan,Z. J. Xiang,J. J. Ying,X. F. Wang,A. F. Wang,G. J. Ye,X. G. Luo,X. H. Chen###
(1486955, 1486956)
 We systematically study the AFM<missing VAR> order of Fe1 zigzag chains and spin-flop ofexcess Fe2 under high magnetic field H through the susceptibility,magnetoresistance (MR), Hall effect and specific heat measurements inhigh-quality single crystal TaFe1y<missing VAR>Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###SDW transition of Fe1 zigzag chains and metamagnetic transition of Fe2 in TaFe$_{1+y}$Te$_3$|R. H. Liu,M. Zhang,P. Cheng,Y. J. Yan,Z. J. Xiang,J. J. Ying,X. F. Wang,A. F. Wang,G. J. Ye,X. G. Luo,X. H. Chen###
(1486966, 1486966)
 We systematically study the AFM<missing VAR> order of Fe1 zigzag chains and spin-flop ofexcess Fe2 under high magnetic field H through the susceptibility,magnetoresistance (MR), Hall effect and specific heat measurements inhigh-quality single crystal TaFe1y<missing VAR>Te3.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TaFe1
###SDW transition of Fe1 zigzag chains and metamagnetic transition of Fe2 in TaFe$_{1+y}$Te$_3$|R. H. Liu,M. Zhang,P. Cheng,Y. J. Yan,Z. J. Xiang,J. J. Ying,X. F. Wang,A. F. Wang,G. J. Ye,X. G. Luo,X. H. Chen###
(1487007, 1487009)
 We systematically study the AFM<missing VAR> order of Fe1 zigzag chains and spin-flop ofexcess Fe2 under high magnetic field H through the susceptibility,magnetoresistance (MR), Hall effect and specific heat measurements inhigh-quality single crystal TaFe1y<missing VAR>Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Te3
###SDW transition of Fe1 zigzag chains and metamagnetic transition of Fe2 in TaFe$_{1+y}$Te$_3$|R. H. Liu,M. Zhang,P. Cheng,Y. J. Yan,Z. J. Xiang,J. J. Ying,X. F. Wang,A. F. Wang,G. J. Ye,X. G. Luo,X. H. Chen###
(1487011, 1487012)
 We systematically study the AFM<missing VAR> order of Fe1 zigzag chains and spin-flop ofexcess Fe2 under high magnetic field H through the susceptibility,magnetoresistance (MR), Hall effect and specific heat measurements inhigh-quality single crystal TaFe1y<missing VAR>Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###SDW transition of Fe1 zigzag chains and metamagnetic transition of Fe2 in TaFe$_{1+y}$Te$_3$|R. H. Liu,M. Zhang,P. Cheng,Y. J. Yan,Z. J. Xiang,J. J. Ying,X. F. Wang,A. F. Wang,G. J. Ye,X. G. Luo,X. H. Chen###
(1487031, 1487031)
 These properties suggest thatthe high temperature AFM<missing VAR> transition of the TaFeTe3 layers should be aSD<missing VAR>W-type AFM<missing VAR> order.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TaFeTe3
###SDW transition of Fe1 zigzag chains and metamagnetic transition of Fe2 in TaFe$_{1+y}$Te$_3$|R. H. Liu,M. Zhang,P. Cheng,Y. J. Yan,Z. J. Xiang,J. J. Ying,X. F. Wang,A. F. Wang,G. J. Ye,X. G. Luo,X. H. Chen###
(1487040, 1487043)
 These properties suggest thatthe high temperature AFM<missing VAR> transition of the TaFeTe3 layers should be aSD<missing VAR>W-type AFM<missing VAR> order.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###SDW transition of Fe1 zigzag chains and metamagnetic transition of Fe2 in TaFe$_{1+y}$Te$_3$|R. H. Liu,M. Zhang,P. Cheng,Y. J. Yan,Z. J. Xiang,J. J. Ying,X. F. Wang,A. F. Wang,G. J. Ye,X. G. Luo,X. H. Chen###
(1487054, 1487054)
 These properties suggest thatthe high temperature AFM<missing VAR> transition of the TaFeTe3 layers should be aSD<missing VAR>W-type AFM<missing VAR> order.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###SDW transition of Fe1 zigzag chains and metamagnetic transition of Fe2 in TaFe$_{1+y}$Te$_3$|R. H. Liu,M. Zhang,P. Cheng,Y. J. Yan,Z. J. Xiang,J. J. Ying,X. F. Wang,A. F. Wang,G. J. Ye,X. G. Luo,X. H. Chen###
(1487056, 1487056)
 These properties suggest thatthe high temperature AFM<missing VAR> transition of the TaFeTe3 layers should be aSD<missing VAR>W-type AFM<missing VAR> order.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###SDW transition of Fe1 zigzag chains and metamagnetic transition of Fe2 in TaFe$_{1+y}$Te$_3$|R. H. Liu,M. Zhang,P. Cheng,Y. J. Yan,Z. J. Xiang,J. J. Ying,X. F. Wang,A. F. Wang,G. J. Ye,X. G. Luo,X. H. Chen###
(1487061, 1487061)
 These properties suggest thatthe high temperature AFM<missing VAR> transition of the TaFeTe3 layers should be aSD<missing VAR>W-type AFM<missing VAR> order.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###SDW transition of Fe1 zigzag chains and metamagnetic transition of Fe2 in TaFe$_{1+y}$Te$_3$|R. H. Liu,M. Zhang,P. Cheng,Y. J. Yan,Z. J. Xiang,J. J. Ying,X. F. Wang,A. F. Wang,G. J. Ye,X. G. Luo,X. H. Chen###
(1487070, 1487070)
 Below T<missing VAR>N, Fe1 antiferromangetic zigzag chains willinduce a inner magnetic field textbfHint to interstitial Fe2 and leadFe2 also forms an AFM<missing VAR> alignment, in which the magnetic coupling strengthbetween Fe1 and Fe2 is enhanced by decreasing temperature.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe1
###SDW transition of Fe1 zigzag chains and metamagnetic transition of Fe2 in TaFe$_{1+y}$Te$_3$|R. H. Liu,M. Zhang,P. Cheng,Y. J. Yan,Z. J. Xiang,J. J. Ying,X. F. Wang,A. F. Wang,G. J. Ye,X. G. Luo,X. H. Chen###
(1487073, 1487074)
 Below T<missing VAR>N, Fe1 antiferromangetic zigzag chains willinduce a inner magnetic field textbfHint to interstitial Fe2 and leadFe2 also forms an AFM<missing VAR> alignment, in which the magnetic coupling strengthbetween Fe1 and Fe2 is enhanced by decreasing temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###SDW transition of Fe1 zigzag chains and metamagnetic transition of Fe2 in TaFe$_{1+y}$Te$_3$|R. H. Liu,M. Zhang,P. Cheng,Y. J. Yan,Z. J. Xiang,J. J. Ying,X. F. Wang,A. F. Wang,G. J. Ye,X. G. Luo,X. H. Chen###
(1487096, 1487096)
 Below T<missing VAR>N, Fe1 antiferromangetic zigzag chains willinduce a inner magnetic field textbfHint to interstitial Fe2 and leadFe2 also forms an AFM<missing VAR> alignment, in which the magnetic coupling strengthbetween Fe1 and Fe2 is enhanced by decreasing temperature.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe2
###SDW transition of Fe1 zigzag chains and metamagnetic transition of Fe2 in TaFe$_{1+y}$Te$_3$|R. H. Liu,M. Zhang,P. Cheng,Y. J. Yan,Z. J. Xiang,J. J. Ying,X. F. Wang,A. F. Wang,G. J. Ye,X. G. Luo,X. H. Chen###
(1487103, 1487104)
 Below T<missing VAR>N, Fe1 antiferromangetic zigzag chains willinduce a inner magnetic field textbfHint to interstitial Fe2 and leadFe2 also forms an AFM<missing VAR> alignment, in which the magnetic coupling strengthbetween Fe1 and Fe2 is enhanced by decreasing temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe2
###SDW transition of Fe1 zigzag chains and metamagnetic transition of Fe2 in TaFe$_{1+y}$Te$_3$|R. H. Liu,M. Zhang,P. Cheng,Y. J. Yan,Z. J. Xiang,J. J. Ying,X. F. Wang,A. F. Wang,G. J. Ye,X. G. Luo,X. H. Chen###
(1487111, 1487112)
 Below T<missing VAR>N, Fe1 antiferromangetic zigzag chains willinduce a inner magnetic field textbfHint to interstitial Fe2 and leadFe2 also forms an AFM<missing VAR> alignment, in which the magnetic coupling strengthbetween Fe1 and Fe2 is enhanced by decreasing temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###SDW transition of Fe1 zigzag chains and metamagnetic transition of Fe2 in TaFe$_{1+y}$Te$_3$|R. H. Liu,M. Zhang,P. Cheng,Y. J. Yan,Z. J. Xiang,J. J. Ying,X. F. Wang,A. F. Wang,G. J. Ye,X. G. Luo,X. H. Chen###
(1487121, 1487121)
 Below T<missing VAR>N, Fe1 antiferromangetic zigzag chains willinduce a inner magnetic field textbfHint to interstitial Fe2 and leadFe2 also forms an AFM<missing VAR> alignment, in which the magnetic coupling strengthbetween Fe1 and Fe2 is enhanced by decreasing temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe1
###SDW transition of Fe1 zigzag chains and metamagnetic transition of Fe2 in TaFe$_{1+y}$Te$_3$|R. H. Liu,M. Zhang,P. Cheng,Y. J. Yan,Z. J. Xiang,J. J. Ying,X. F. Wang,A. F. Wang,G. J. Ye,X. G. Luo,X. H. Chen###
(1487142, 1487143)
 Below T<missing VAR>N, Fe1 antiferromangetic zigzag chains willinduce a inner magnetic field textbfHint to interstitial Fe2 and leadFe2 also forms an AFM<missing VAR> alignment, in which the magnetic coupling strengthbetween Fe1 and Fe2 is enhanced by decreasing temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe2
###SDW transition of Fe1 zigzag chains and metamagnetic transition of Fe2 in TaFe$_{1+y}$Te$_3$|R. H. Liu,M. Zhang,P. Cheng,Y. J. Yan,Z. J. Xiang,J. J. Ying,X. F. Wang,A. F. Wang,G. J. Ye,X. G. Luo,X. H. Chen###
(1487147, 1487148)
 Below T<missing VAR>N, Fe1 antiferromangetic zigzag chains willinduce a inner magnetic field textbfHint to interstitial Fe2 and leadFe2 also forms an AFM<missing VAR> alignment, in which the magnetic coupling strengthbetween Fe1 and Fe2 is enhanced by decreasing temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###SDW transition of Fe1 zigzag chains and metamagnetic transition of Fe2 in TaFe$_{1+y}$Te$_3$|R. H. Liu,M. Zhang,P. Cheng,Y. J. Yan,Z. J. Xiang,J. J. Ying,X. F. Wang,A. F. Wang,G. J. Ye,X. G. Luo,X. H. Chen###
(1487180, 1487180)
 On the other hand,the external magnetic field textbfHext inclines to tune interstitialFe2 to form FM<missing VAR> alignment along textbfHext.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe2
###SDW transition of Fe1 zigzag chains and metamagnetic transition of Fe2 in TaFe$_{1+y}$Te$_3$|R. H. Liu,M. Zhang,P. Cheng,Y. J. Yan,Z. J. Xiang,J. J. Ying,X. F. Wang,A. F. Wang,G. J. Ye,X. G. Luo,X. H. Chen###
(1487192, 1487193)
 On the other hand,the external magnetic field textbfHext inclines to tune interstitialFe2 to form FM<missing VAR> alignment along textbfHext.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###SDW transition of Fe1 zigzag chains and metamagnetic transition of Fe2 in TaFe$_{1+y}$Te$_3$|R. H. Liu,M. Zhang,P. Cheng,Y. J. Yan,Z. J. Xiang,J. J. Ying,X. F. Wang,A. F. Wang,G. J. Ye,X. G. Luo,X. H. Chen###
(1487199, 1487199)
 On the other hand,the external magnetic field textbfHext inclines to tune interstitialFe2 to form FM<missing VAR> alignment along textbfHext.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###SDW transition of Fe1 zigzag chains and metamagnetic transition of Fe2 in TaFe$_{1+y}$Te$_3$|R. H. Liu,M. Zhang,P. Cheng,Y. J. Yan,Z. J. Xiang,J. J. Ying,X. F. Wang,A. F. Wang,G. J. Ye,X. G. Luo,X. H. Chen###
(1487207, 1487207)
 On the other hand,the external magnetic field textbfHext inclines to tune interstitialFe2 to form FM<missing VAR> alignment along textbfHext.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###SDW transition of Fe1 zigzag chains and metamagnetic transition of Fe2 in TaFe$_{1+y}$Te$_3$|R. H. Liu,M. Zhang,P. Cheng,Y. J. Yan,Z. J. Xiang,J. J. Ying,X. F. Wang,A. F. Wang,G. J. Ye,X. G. Luo,X. H. Chen###
(1487214, 1487214)
 When textbfHextarrives at the coercive field HC, which is able to break the couplingbetween Fe1 and Fe2, these interstitial Fe2 atoms take a spin-flop from AFM<missing VAR> toFM<missing VAR> alignment.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HC
###SDW transition of Fe1 zigzag chains and metamagnetic transition of Fe2 in TaFe$_{1+y}$Te$_3$|R. H. Liu,M. Zhang,P. Cheng,Y. J. Yan,Z. J. Xiang,J. J. Ying,X. F. Wang,A. F. Wang,G. J. Ye,X. G. Luo,X. H. Chen###
(1487228, 1487229)
 When textbfHextarrives at the coercive field HC, which is able to break the couplingbetween Fe1 and Fe2, these interstitial Fe2 atoms take a spin-flop from AFM<missing VAR> toFM<missing VAR> alignment.
Featurization terminated normally.
0.5,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe1
###SDW transition of Fe1 zigzag chains and metamagnetic transition of Fe2 in TaFe$_{1+y}$Te$_3$|R. H. Liu,M. Zhang,P. Cheng,Y. J. Yan,Z. J. Xiang,J. J. Ying,X. F. Wang,A. F. Wang,G. J. Ye,X. G. Luo,X. H. Chen###
(1487249, 1487250)
 When textbfHextarrives at the coercive field HC, which is able to break the couplingbetween Fe1 and Fe2, these interstitial Fe2 atoms take a spin-flop from AFM<missing VAR> toFM<missing VAR> alignment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe2
###SDW transition of Fe1 zigzag chains and metamagnetic transition of Fe2 in TaFe$_{1+y}$Te$_3$|R. H. Liu,M. Zhang,P. Cheng,Y. J. Yan,Z. J. Xiang,J. J. Ying,X. F. Wang,A. F. Wang,G. J. Ye,X. G. Luo,X. H. Chen###
(1487254, 1487255)
 When textbfHextarrives at the coercive field HC, which is able to break the couplingbetween Fe1 and Fe2, these interstitial Fe2 atoms take a spin-flop from AFM<missing VAR> toFM<missing VAR> alignment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe2
###SDW transition of Fe1 zigzag chains and metamagnetic transition of Fe2 in TaFe$_{1+y}$Te$_3$|R. H. Liu,M. Zhang,P. Cheng,Y. J. Yan,Z. J. Xiang,J. J. Ying,X. F. Wang,A. F. Wang,G. J. Ye,X. G. Luo,X. H. Chen###
(1487262, 1487263)
 When textbfHextarrives at the coercive field HC, which is able to break the couplingbetween Fe1 and Fe2, these interstitial Fe2 atoms take a spin-flop from AFM<missing VAR> toFM<missing VAR> alignment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###SDW transition of Fe1 zigzag chains and metamagnetic transition of Fe2 in TaFe$_{1+y}$Te$_3$|R. H. Liu,M. Zhang,P. Cheng,Y. J. Yan,Z. J. Xiang,J. J. Ying,X. F. Wang,A. F. Wang,G. J. Ye,X. G. Luo,X. H. Chen###
(1487278, 1487278)
 When textbfHextarrives at the coercive field HC, which is able to break the couplingbetween Fe1 and Fe2, these interstitial Fe2 atoms take a spin-flop from AFM<missing VAR> toFM<missing VAR> alignment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###SDW transition of Fe1 zigzag chains and metamagnetic transition of Fe2 in TaFe$_{1+y}$Te$_3$|R. H. Liu,M. Zhang,P. Cheng,Y. J. Yan,Z. J. Xiang,J. J. Ying,X. F. Wang,A. F. Wang,G. J. Ye,X. G. Luo,X. H. Chen###
(1487284, 1487284)
 When textbfHextarrives at the coercive field HC, which is able to break the couplingbetween Fe1 and Fe2, these interstitial Fe2 atoms take a spin-flop from AFM<missing VAR> toFM<missing VAR> alignment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe2
###SDW transition of Fe1 zigzag chains and metamagnetic transition of Fe2 in TaFe$_{1+y}$Te$_3$|R. H. Liu,M. Zhang,P. Cheng,Y. J. Yan,Z. J. Xiang,J. J. Ying,X. F. Wang,A. F. Wang,G. J. Ye,X. G. Luo,X. H. Chen###
(1487298, 1487299)
 The local moment of Fe2 is about 4 mutextrmB/Fe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B/Fe
###SDW transition of Fe1 zigzag chains and metamagnetic transition of Fe2 in TaFe$_{1+y}$Te$_3$|R. H. Liu,M. Zhang,P. Cheng,Y. J. Yan,Z. J. Xiang,J. J. Ying,X. F. Wang,A. F. Wang,G. J. Ye,X. G. Luo,X. H. Chen###
(1487309, 1487311)
 The local moment of Fe2 is about 4 mutextrmB/Fe.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

C
###SDW transition of Fe1 zigzag chains and metamagnetic transition of Fe2 in TaFe$_{1+y}$Te$_3$|R. H. Liu,M. Zhang,P. Cheng,Y. J. Yan,Z. J. Xiang,J. J. Ying,X. F. Wang,A. F. Wang,G. J. Ye,X. G. Luo,X. H. Chen###
(1487324, 1487324)
 Fromlow field (<HC) AFM<missing VAR> to high field (>HC) FM<missing VAR> for Fe2, it also inducessharp drop on resistivity and an anomalous Hall effect.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###SDW transition of Fe1 zigzag chains and metamagnetic transition of Fe2 in TaFe$_{1+y}$Te$_3$|R. H. Liu,M. Zhang,P. Cheng,Y. J. Yan,Z. J. Xiang,J. J. Ying,X. F. Wang,A. F. Wang,G. J. Ye,X. G. Luo,X. H. Chen###
(1487328, 1487328)
 Fromlow field (<HC) AFM<missing VAR> to high field (>HC) FM<missing VAR> for Fe2, it also inducessharp drop on resistivity and an anomalous Hall effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###SDW transition of Fe1 zigzag chains and metamagnetic transition of Fe2 in TaFe$_{1+y}$Te$_3$|R. H. Liu,M. Zhang,P. Cheng,Y. J. Yan,Z. J. Xiang,J. J. Ying,X. F. Wang,A. F. Wang,G. J. Ye,X. G. Luo,X. H. Chen###
(1487340, 1487340)
 Fromlow field (<HC) AFM<missing VAR> to high field (>HC) FM<missing VAR> for Fe2, it also inducessharp drop on resistivity and an anomalous Hall effect.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###SDW transition of Fe1 zigzag chains and metamagnetic transition of Fe2 in TaFe$_{1+y}$Te$_3$|R. H. Liu,M. Zhang,P. Cheng,Y. J. Yan,Z. J. Xiang,J. J. Ying,X. F. Wang,A. F. Wang,G. J. Ye,X. G. Luo,X. H. Chen###
(1487343, 1487343)
 Fromlow field (<HC) AFM<missing VAR> to high field (>HC) FM<missing VAR> for Fe2, it also inducessharp drop on resistivity and an anomalous Hall effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe2
###SDW transition of Fe1 zigzag chains and metamagnetic transition of Fe2 in TaFe$_{1+y}$Te$_3$|R. H. Liu,M. Zhang,P. Cheng,Y. J. Yan,Z. J. Xiang,J. J. Ying,X. F. Wang,A. F. Wang,G. J. Ye,X. G. Luo,X. H. Chen###
(1487348, 1487349)
 Fromlow field (<HC) AFM<missing VAR> to high field (>HC) FM<missing VAR> for Fe2, it also inducessharp drop on resistivity and an anomalous Hall effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TaFe1
###SDW transition of Fe1 zigzag chains and metamagnetic transition of Fe2 in TaFe$_{1+y}$Te$_3$|R. H. Liu,M. Zhang,P. Cheng,Y. J. Yan,Z. J. Xiang,J. J. Ying,X. F. Wang,A. F. Wang,G. J. Ye,X. G. Luo,X. H. Chen###
(1487389, 1487391)
 The possible magneticstructure of TaFe1y<missing VAR>Te3 is proposed from the susceptibility and MR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Te3
###SDW transition of Fe1 zigzag chains and metamagnetic transition of Fe2 in TaFe$_{1+y}$Te$_3$|R. H. Liu,M. Zhang,P. Cheng,Y. J. Yan,Z. J. Xiang,J. J. Ying,X. F. Wang,A. F. Wang,G. J. Ye,X. G. Luo,X. H. Chen###
(1487393, 1487394)
 The possible magneticstructure of TaFe1y<missing VAR>Te3 is proposed from the susceptibility and MR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe2
###SDW transition of Fe1 zigzag chains and metamagnetic transition of Fe2 in TaFe$_{1+y}$Te$_3$|R. H. Liu,M. Zhang,P. Cheng,Y. J. Yan,Z. J. Xiang,J. J. Ying,X. F. Wang,A. F. Wang,G. J. Ye,X. G. Luo,X. H. Chen###
(1487429, 1487430)
 Theproperties related to the spin-flop of Fe2 supply a good opportunity to studythe coupling between Fe1 and Fe2 in these TaFe1y<missing VAR>Te3 or Fe1y<missing VAR>Tewith interstitial Fe2 compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe1
###SDW transition of Fe1 zigzag chains and metamagnetic transition of Fe2 in TaFe$_{1+y}$Te$_3$|R. H. Liu,M. Zhang,P. Cheng,Y. J. Yan,Z. J. Xiang,J. J. Ying,X. F. Wang,A. F. Wang,G. J. Ye,X. G. Luo,X. H. Chen###
(1487451, 1487452)
 Theproperties related to the spin-flop of Fe2 supply a good opportunity to studythe coupling between Fe1 and Fe2 in these TaFe1y<missing VAR>Te3 or Fe1y<missing VAR>Tewith interstitial Fe2 compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe2
###SDW transition of Fe1 zigzag chains and metamagnetic transition of Fe2 in TaFe$_{1+y}$Te$_3$|R. H. Liu,M. Zhang,P. Cheng,Y. J. Yan,Z. J. Xiang,J. J. Ying,X. F. Wang,A. F. Wang,G. J. Ye,X. G. Luo,X. H. Chen###
(1487456, 1487457)
 Theproperties related to the spin-flop of Fe2 supply a good opportunity to studythe coupling between Fe1 and Fe2 in these TaFe1y<missing VAR>Te3 or Fe1y<missing VAR>Tewith interstitial Fe2 compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TaFe1
###SDW transition of Fe1 zigzag chains and metamagnetic transition of Fe2 in TaFe$_{1+y}$Te$_3$|R. H. Liu,M. Zhang,P. Cheng,Y. J. Yan,Z. J. Xiang,J. J. Ying,X. F. Wang,A. F. Wang,G. J. Ye,X. G. Luo,X. H. Chen###
(1487463, 1487465)
 Theproperties related to the spin-flop of Fe2 supply a good opportunity to studythe coupling between Fe1 and Fe2 in these TaFe1y<missing VAR>Te3 or Fe1y<missing VAR>Tewith interstitial Fe2 compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Te3
###SDW transition of Fe1 zigzag chains and metamagnetic transition of Fe2 in TaFe$_{1+y}$Te$_3$|R. H. Liu,M. Zhang,P. Cheng,Y. J. Yan,Z. J. Xiang,J. J. Ying,X. F. Wang,A. F. Wang,G. J. Ye,X. G. Luo,X. H. Chen###
(1487467, 1487468)
 Theproperties related to the spin-flop of Fe2 supply a good opportunity to studythe coupling between Fe1 and Fe2 in these TaFe1y<missing VAR>Te3 or Fe1y<missing VAR>Tewith interstitial Fe2 compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe1
###SDW transition of Fe1 zigzag chains and metamagnetic transition of Fe2 in TaFe$_{1+y}$Te$_3$|R. H. Liu,M. Zhang,P. Cheng,Y. J. Yan,Z. J. Xiang,J. J. Ying,X. F. Wang,A. F. Wang,G. J. Ye,X. G. Luo,X. H. Chen###
(1487472, 1487473)
 Theproperties related to the spin-flop of Fe2 supply a good opportunity to studythe coupling between Fe1 and Fe2 in these TaFe1y<missing VAR>Te3 or Fe1y<missing VAR>Tewith interstitial Fe2 compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Te
###SDW transition of Fe1 zigzag chains and metamagnetic transition of Fe2 in TaFe$_{1+y}$Te$_3$|R. H. Liu,M. Zhang,P. Cheng,Y. J. Yan,Z. J. Xiang,J. J. Ying,X. F. Wang,A. F. Wang,G. J. Ye,X. G. Luo,X. H. Chen###
(1487475, 1487475)
 Theproperties related to the spin-flop of Fe2 supply a good opportunity to studythe coupling between Fe1 and Fe2 in these TaFe1y<missing VAR>Te3 or Fe1y<missing VAR>Tewith interstitial Fe2 compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe2
###SDW transition of Fe1 zigzag chains and metamagnetic transition of Fe2 in TaFe$_{1+y}$Te$_3$|R. H. Liu,M. Zhang,P. Cheng,Y. J. Yan,Z. J. Xiang,J. J. Ying,X. F. Wang,A. F. Wang,G. J. Ye,X. G. Luo,X. H. Chen###
(1487482, 1487483)
 Theproperties related to the spin-flop of Fe2 supply a good opportunity to studythe coupling between Fe1 and Fe2 in these TaFe1y<missing VAR>Te3 or Fe1y<missing VAR>Tewith interstitial Fe2 compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Te3
###Weak antilocalization in topological insulator Bi$_{2}$Te$_{3}$ microflakes|Shao-Pin Chiu,Juhn-Jong Lin###
(1487506, 1487509)
Weak antilocalization in topological insulator Bi2Te3 microflakes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 0.3, 'and', 1],[40.0, 10, 'K', 1],[315.0, 2, 'in', 5]

I
###Weak antilocalization in topological insulator Bi$_{2}$Te$_{3}$ microflakes|Shao-Pin Chiu,Juhn-Jong Lin###
(1487536, 1487536)
 We have studied the carrier transport in two topological insulator (T<missing VAR>I)Bi2Te3 microflakes between 0.3 and 10 K and under applied backgatevoltages (Vrm BG).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 0.3, 'and', 0],[13.0, 10, 'K', 0],[288.0, 2, 'in', 4]

Bi2Te3
###Weak antilocalization in topological insulator Bi$_{2}$Te$_{3}$ microflakes|Shao-Pin Chiu,Juhn-Jong Lin###
(1487540, 1487543)
 We have studied the carrier transport in two topological insulator (T<missing VAR>I)Bi2Te3 microflakes between 0.3 and 10 K and under applied backgatevoltages (Vrm BG).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 0.3, 'and', 0],[6.0, 10, 'K', 0],[281.0, 2, 'in', 4]

V
###Weak antilocalization in topological insulator Bi$_{2}$Te$_{3}$ microflakes|Shao-Pin Chiu,Juhn-Jong Lin###
(1487563, 1487563)
 We have studied the carrier transport in two topological insulator (T<missing VAR>I)Bi2Te3 microflakes between 0.3 and 10 K and under applied backgatevoltages (Vrm BG).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 0.3, 'and', 0],[14.0, 10, 'K', 0],[261.0, 2, 'in', 4]

B
###Weak antilocalization in topological insulator Bi$_{2}$Te$_{3}$ microflakes|Shao-Pin Chiu,Juhn-Jong Lin###
(1487566, 1487566)
 We have studied the carrier transport in two topological insulator (T<missing VAR>I)Bi2Te3 microflakes between 0.3 and 10 K and under applied backgatevoltages (Vrm BG).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 0.3, 'and', 0],[17.0, 10, 'K', 0],[258.0, 2, 'in', 4]

I
###Weak antilocalization in topological insulator Bi$_{2}$Te$_{3}$ microflakes|Shao-Pin Chiu,Juhn-Jong Lin###
(1487670, 1487670)
 The extracted Coulomb screeningparameter is negative, which is in accord with the situation of strongspin-orbit scattering as is inherited in the T<missing VAR>I materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 0.3, 'and', 2],[121.0, 10, 'K', 2],[154.0, 2, 'in', 2]

In
###Weak antilocalization in topological insulator Bi$_{2}$Te$_{3}$ microflakes|Shao-Pin Chiu,Juhn-Jong Lin###
(1487675, 1487675)
 In particular,positive magnetoresistances (M<missing VAR>Rs) in the two-dimensional weak-antilocalization(WAL) effect were measured in low magnetic fields, which can be satisfactorilydescribed by a multichannel-conduction model.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 0.3, 'and', 3],[126.0, 10, 'K', 3],[149.0, 2, 'in', 1]

W
###Weak antilocalization in topological insulator Bi$_{2}$Te$_{3}$ microflakes|Shao-Pin Chiu,Juhn-Jong Lin###
(1487704, 1487704)
 In particular,positive magnetoresistances (M<missing VAR>Rs) in the two-dimensional weak-antilocalization(WAL) effect were measured in low magnetic fields, which can be satisfactorilydescribed by a multichannel-conduction model.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 0.3, 'and', 3],[155.0, 10, 'K', 3],[120.0, 2, 'in', 1]

K
###Weak antilocalization in topological insulator Bi$_{2}$Te$_{3}$ microflakes|Shao-Pin Chiu,Juhn-Jong Lin###
(1487763, 1487763)
 Both at low temperatures of T<missing VAR> <1 K and under high positive Vrm BG<missing VAR>, signatures of the presence of twocoherent conduction channels were observed, as indicated by an increase by afactor of approx 2 in the prefactor which characterizes the WAL MRmagnitude.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[215.0, 0.3, 'and', 4],[214.0, 10, 'K', 4],[61.0, 2, 'in', 0]

V
###Weak antilocalization in topological insulator Bi$_{2}$Te$_{3}$ microflakes|Shao-Pin Chiu,Juhn-Jong Lin###
(1487773, 1487773)
 Both at low temperatures of T<missing VAR> <1 K and under high positive Vrm BG<missing VAR>, signatures of the presence of twocoherent conduction channels were observed, as indicated by an increase by afactor of approx 2 in the prefactor which characterizes the WAL MRmagnitude.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[225.0, 0.3, 'and', 4],[224.0, 10, 'K', 4],[51.0, 2, 'in', 0]

B
###Weak antilocalization in topological insulator Bi$_{2}$Te$_{3}$ microflakes|Shao-Pin Chiu,Juhn-Jong Lin###
(1487776, 1487776)
 Both at low temperatures of T<missing VAR> <1 K and under high positive Vrm BG<missing VAR>, signatures of the presence of twocoherent conduction channels were observed, as indicated by an increase by afactor of approx 2 in the prefactor which characterizes the WAL MRmagnitude.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[228.0, 0.3, 'and', 4],[227.0, 10, 'K', 4],[48.0, 2, 'in', 0]

W
###Weak antilocalization in topological insulator Bi$_{2}$Te$_{3}$ microflakes|Shao-Pin Chiu,Juhn-Jong Lin###
(1487836, 1487836)
 Both at low temperatures of T<missing VAR> <1 K and under high positive Vrm BG<missing VAR>, signatures of the presence of twocoherent conduction channels were observed, as indicated by an increase by afactor of approx 2 in the prefactor which characterizes the WAL MRmagnitude.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[288.0, 0.3, 'and', 4],[287.0, 10, 'K', 4],[12.0, 2, 'in', 0]

I
###Weak antilocalization in topological insulator Bi$_{2}$Te$_{3}$ microflakes|Shao-Pin Chiu,Juhn-Jong Lin###
(1487906, 1487906)
 Our results are discussed in terms of the (likely) existence of theDirac fermion surface states, in addition to the bulk states, in thethree-dimensional T<missing VAR>I Bi2Te3 material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[358.0, 0.3, 'and', 5],[357.0, 10, 'K', 5],[82.0, 2, 'in', 1]

Bi2Te3
###Weak antilocalization in topological insulator Bi$_{2}$Te$_{3}$ microflakes|Shao-Pin Chiu,Juhn-Jong Lin###
(1487908, 1487911)
 Our results are discussed in terms of the (likely) existence of theDirac fermion surface states, in addition to the bulk states, in thethree-dimensional T<missing VAR>I Bi2Te3 material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[360.0, 0.3, 'and', 5],[359.0, 10, 'K', 5],[84.0, 2, 'in', 1]

In
###Spin heat accumulation and spin-dependent temperatures in nanopillar spin valves|F. K. Dejene,J. Flipse,G. E. W. Bauer,B. J. van Wees###
(1488061, 1488061)
 In studies of the interaction between heat and spin transport, orspin caloritronics, until recently it was assumed that both spin species arealways at the same temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[210.0, 120, 'mK', 3],[231.0, 77, 'K', 3],[250.0, 10, '%', 3]

SH
###Spin heat accumulation and spin-dependent temperatures in nanopillar spin valves|F. K. Dejene,J. Flipse,G. E. W. Bauer,B. J. van Wees###
(1488263, 1488264)
 Using3D<missing VAR> finite element modeling spin heat accumulation (SHA) values of 120 mK and350 m<missing VAR>K are extracted at room temperature and 77 K, respectively, which is ofthe order of 10% of the total temperature bias over the pillar.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 120, 'mK', 0],[28.0, 77, 'K', 0],[47.0, 10, '%', 0]

K
###Spin heat accumulation and spin-dependent temperatures in nanopillar spin valves|F. K. Dejene,J. Flipse,G. E. W. Bauer,B. J. van Wees###
(1488279, 1488279)
 Using3D<missing VAR> finite element modeling spin heat accumulation (SHA) values of 120 mK and350 m<missing VAR>K are extracted at room temperature and 77 K, respectively, which is ofthe order of 10% of the total temperature bias over the pillar.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 120, 'mK', 0],[13.0, 77, 'K', 0],[32.0, 10, '%', 0]

In
###Slow dynamics of spin pairs in random hyperfine field: Role of inequivalence of electrons and holes in organic magnetoresistance|R. C. Roundy,M. E. Raikh###
(1488428, 1488428)
 In an external magnetic field B, the spins of the electron and hole willprecess in effective fields be  B and bh  B, where be and bh are randomhyperfine fields acting on the electron and hole, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Slow dynamics of spin pairs in random hyperfine field: Role of inequivalence of electrons and holes in organic magnetoresistance|R. C. Roundy,M. E. Raikh###
(1488438, 1488438)
 In an external magnetic field B, the spins of the electron and hole willprecess in effective fields be  B and bh  B, where be and bh are randomhyperfine fields acting on the electron and hole, respectively.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Slow dynamics of spin pairs in random hyperfine field: Role of inequivalence of electrons and holes in organic magnetoresistance|R. C. Roundy,M. E. Raikh###
(1488470, 1488470)
 In an external magnetic field B, the spins of the electron and hole willprecess in effective fields be  B and bh  B, where be and bh are randomhyperfine fields acting on the electron and hole, respectively.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Slow dynamics of spin pairs in random hyperfine field: Role of inequivalence of electrons and holes in organic magnetoresistance|R. C. Roundy,M. E. Raikh###
(1488478, 1488478)
 In an external magnetic field B, the spins of the electron and hole willprecess in effective fields be  B and bh  B, where be and bh are randomhyperfine fields acting on the electron and hole, respectively.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Slow dynamics of spin pairs in random hyperfine field: Role of inequivalence of electrons and holes in organic magnetoresistance|R. C. Roundy,M. E. Raikh###
(1488678, 1488678)
 It appears that when be and bh have identical gaussiandistributions the contribution of soft pairs to the current does not depend onB.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###High spin polarization of the anomalous Hall current in Co-based Heusler compounds|Jen-Chuan Tung,Guang-Yu Guo###
(1488888, 1488888)
High spin polarization of the anomalous Hall current in Co-based Heusler compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###High spin polarization of the anomalous Hall current in Co-based Heusler compounds|Jen-Chuan Tung,Guang-Yu Guo###
(1488946, 1488946)
 Based on first principles density functional calculations of the intrinsicanomalous and spin Hall conductivities, we predict that the charge Hall currentin Co-based full Heusler compounds Co2XZ (X<missing VAR>  Cr and Mn; Z<missing VAR>  Al, Si, Ga, Ge,In and Sn) except Co2CrGa would be almost fully spin-polarized even althoughCo2MnAl, Co2MnGa, Co2MnIn and Co2MnSn do not have a half-metallicband structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co2
###High spin polarization of the anomalous Hall current in Co-based Heusler compounds|Jen-Chuan Tung,Guang-Yu Guo###
(1488956, 1488957)
 Based on first principles density functional calculations of the intrinsicanomalous and spin Hall conductivities, we predict that the charge Hall currentin Co-based full Heusler compounds Co2XZ (X<missing VAR>  Cr and Mn; Z<missing VAR>  Al, Si, Ga, Ge,In and Sn) except Co2CrGa would be almost fully spin-polarized even althoughCo2MnAl, Co2MnGa, Co2MnIn and Co2MnSn do not have a half-metallicband structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr
###High spin polarization of the anomalous Hall current in Co-based Heusler compounds|Jen-Chuan Tung,Guang-Yu Guo###
(1488965, 1488965)
 Based on first principles density functional calculations of the intrinsicanomalous and spin Hall conductivities, we predict that the charge Hall currentin Co-based full Heusler compounds Co2XZ (X<missing VAR>  Cr and Mn; Z<missing VAR>  Al, Si, Ga, Ge,In and Sn) except Co2CrGa would be almost fully spin-polarized even althoughCo2MnAl, Co2MnGa, Co2MnIn and Co2MnSn do not have a half-metallicband structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###High spin polarization of the anomalous Hall current in Co-based Heusler compounds|Jen-Chuan Tung,Guang-Yu Guo###
(1488969, 1488969)
 Based on first principles density functional calculations of the intrinsicanomalous and spin Hall conductivities, we predict that the charge Hall currentin Co-based full Heusler compounds Co2XZ (X<missing VAR>  Cr and Mn; Z<missing VAR>  Al, Si, Ga, Ge,In and Sn) except Co2CrGa would be almost fully spin-polarized even althoughCo2MnAl, Co2MnGa, Co2MnIn and Co2MnSn do not have a half-metallicband structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Al
###High spin polarization of the anomalous Hall current in Co-based Heusler compounds|Jen-Chuan Tung,Guang-Yu Guo###
(1488975, 1488975)
 Based on first principles density functional calculations of the intrinsicanomalous and spin Hall conductivities, we predict that the charge Hall currentin Co-based full Heusler compounds Co2XZ (X<missing VAR>  Cr and Mn; Z<missing VAR>  Al, Si, Ga, Ge,In and Sn) except Co2CrGa would be almost fully spin-polarized even althoughCo2MnAl, Co2MnGa, Co2MnIn and Co2MnSn do not have a half-metallicband structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###High spin polarization of the anomalous Hall current in Co-based Heusler compounds|Jen-Chuan Tung,Guang-Yu Guo###
(1488978, 1488978)
 Based on first principles density functional calculations of the intrinsicanomalous and spin Hall conductivities, we predict that the charge Hall currentin Co-based full Heusler compounds Co2XZ (X<missing VAR>  Cr and Mn; Z<missing VAR>  Al, Si, Ga, Ge,In and Sn) except Co2CrGa would be almost fully spin-polarized even althoughCo2MnAl, Co2MnGa, Co2MnIn and Co2MnSn do not have a half-metallicband structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###High spin polarization of the anomalous Hall current in Co-based Heusler compounds|Jen-Chuan Tung,Guang-Yu Guo###
(1488981, 1488981)
 Based on first principles density functional calculations of the intrinsicanomalous and spin Hall conductivities, we predict that the charge Hall currentin Co-based full Heusler compounds Co2XZ (X<missing VAR>  Cr and Mn; Z<missing VAR>  Al, Si, Ga, Ge,In and Sn) except Co2CrGa would be almost fully spin-polarized even althoughCo2MnAl, Co2MnGa, Co2MnIn and Co2MnSn do not have a half-metallicband structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ge
###High spin polarization of the anomalous Hall current in Co-based Heusler compounds|Jen-Chuan Tung,Guang-Yu Guo###
(1488984, 1488984)
 Based on first principles density functional calculations of the intrinsicanomalous and spin Hall conductivities, we predict that the charge Hall currentin Co-based full Heusler compounds Co2XZ (X<missing VAR>  Cr and Mn; Z<missing VAR>  Al, Si, Ga, Ge,In and Sn) except Co2CrGa would be almost fully spin-polarized even althoughCo2MnAl, Co2MnGa, Co2MnIn and Co2MnSn do not have a half-metallicband structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###High spin polarization of the anomalous Hall current in Co-based Heusler compounds|Jen-Chuan Tung,Guang-Yu Guo###
(1488988, 1488988)
 Based on first principles density functional calculations of the intrinsicanomalous and spin Hall conductivities, we predict that the charge Hall currentin Co-based full Heusler compounds Co2XZ (X<missing VAR>  Cr and Mn; Z<missing VAR>  Al, Si, Ga, Ge,In and Sn) except Co2CrGa would be almost fully spin-polarized even althoughCo2MnAl, Co2MnGa, Co2MnIn and Co2MnSn do not have a half-metallicband structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sn
###High spin polarization of the anomalous Hall current in Co-based Heusler compounds|Jen-Chuan Tung,Guang-Yu Guo###
(1488992, 1488992)
 Based on first principles density functional calculations of the intrinsicanomalous and spin Hall conductivities, we predict that the charge Hall currentin Co-based full Heusler compounds Co2XZ (X<missing VAR>  Cr and Mn; Z<missing VAR>  Al, Si, Ga, Ge,In and Sn) except Co2CrGa would be almost fully spin-polarized even althoughCo2MnAl, Co2MnGa, Co2MnIn and Co2MnSn do not have a half-metallicband structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co2CrGa
###High spin polarization of the anomalous Hall current in Co-based Heusler compounds|Jen-Chuan Tung,Guang-Yu Guo###
(1488997, 1489000)
 Based on first principles density functional calculations of the intrinsicanomalous and spin Hall conductivities, we predict that the charge Hall currentin Co-based full Heusler compounds Co2XZ (X<missing VAR>  Cr and Mn; Z<missing VAR>  Al, Si, Ga, Ge,In and Sn) except Co2CrGa would be almost fully spin-polarized even althoughCo2MnAl, Co2MnGa, Co2MnIn and Co2MnSn do not have a half-metallicband structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0.5,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co2MnAl
###High spin polarization of the anomalous Hall current in Co-based Heusler compounds|Jen-Chuan Tung,Guang-Yu Guo###
(1489019, 1489022)
 Based on first principles density functional calculations of the intrinsicanomalous and spin Hall conductivities, we predict that the charge Hall currentin Co-based full Heusler compounds Co2XZ (X<missing VAR>  Cr and Mn; Z<missing VAR>  Al, Si, Ga, Ge,In and Sn) except Co2CrGa would be almost fully spin-polarized even althoughCo2MnAl, Co2MnGa, Co2MnIn and Co2MnSn do not have a half-metallicband structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co2MnGa
###High spin polarization of the anomalous Hall current in Co-based Heusler compounds|Jen-Chuan Tung,Guang-Yu Guo###
(1489025, 1489028)
 Based on first principles density functional calculations of the intrinsicanomalous and spin Hall conductivities, we predict that the charge Hall currentin Co-based full Heusler compounds Co2XZ (X<missing VAR>  Cr and Mn; Z<missing VAR>  Al, Si, Ga, Ge,In and Sn) except Co2CrGa would be almost fully spin-polarized even althoughCo2MnAl, Co2MnGa, Co2MnIn and Co2MnSn do not have a half-metallicband structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.5,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co2MnIn
###High spin polarization of the anomalous Hall current in Co-based Heusler compounds|Jen-Chuan Tung,Guang-Yu Guo###
(1489031, 1489034)
 Based on first principles density functional calculations of the intrinsicanomalous and spin Hall conductivities, we predict that the charge Hall currentin Co-based full Heusler compounds Co2XZ (X<missing VAR>  Cr and Mn; Z<missing VAR>  Al, Si, Ga, Ge,In and Sn) except Co2CrGa would be almost fully spin-polarized even althoughCo2MnAl, Co2MnGa, Co2MnIn and Co2MnSn do not have a half-metallicband structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co2MnSn
###High spin polarization of the anomalous Hall current in Co-based Heusler compounds|Jen-Chuan Tung,Guang-Yu Guo###
(1489038, 1489041)
 Based on first principles density functional calculations of the intrinsicanomalous and spin Hall conductivities, we predict that the charge Hall currentin Co-based full Heusler compounds Co2XZ (X<missing VAR>  Cr and Mn; Z<missing VAR>  Al, Si, Ga, Ge,In and Sn) except Co2CrGa would be almost fully spin-polarized even althoughCo2MnAl, Co2MnGa, Co2MnIn and Co2MnSn do not have a half-metallicband structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###High spin polarization of the anomalous Hall current in Co-based Heusler compounds|Jen-Chuan Tung,Guang-Yu Guo###
(1489109, 1489109)
 This suggests that theseCo-based Heusler compounds, especially Co2MnAl, Co2MnGa and Co2MnInwhich are found to have large anomalous and spin Hall conductivities, might becalled anomalous Hall half-metals and could have valuable applications inspintronics such as spin valves as well as magnetoresistive and spin-torquedriven nanodevices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co2MnAl
###High spin polarization of the anomalous Hall current in Co-based Heusler compounds|Jen-Chuan Tung,Guang-Yu Guo###
(1489120, 1489123)
 This suggests that theseCo-based Heusler compounds, especially Co2MnAl, Co2MnGa and Co2MnInwhich are found to have large anomalous and spin Hall conductivities, might becalled anomalous Hall half-metals and could have valuable applications inspintronics such as spin valves as well as magnetoresistive and spin-torquedriven nanodevices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co2MnGa
###High spin polarization of the anomalous Hall current in Co-based Heusler compounds|Jen-Chuan Tung,Guang-Yu Guo###
(1489126, 1489129)
 This suggests that theseCo-based Heusler compounds, especially Co2MnAl, Co2MnGa and Co2MnInwhich are found to have large anomalous and spin Hall conductivities, might becalled anomalous Hall half-metals and could have valuable applications inspintronics such as spin valves as well as magnetoresistive and spin-torquedriven nanodevices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.5,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co2MnIn
###High spin polarization of the anomalous Hall current in Co-based Heusler compounds|Jen-Chuan Tung,Guang-Yu Guo###
(1489133, 1489136)
 This suggests that theseCo-based Heusler compounds, especially Co2MnAl, Co2MnGa and Co2MnInwhich are found to have large anomalous and spin Hall conductivities, might becalled anomalous Hall half-metals and could have valuable applications inspintronics such as spin valves as well as magnetoresistive and spin-torquedriven nanodevices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SmFeAsO1-x
###Transition Temperature and Upper Critical Field in SmFeAsO1-xFx Synthesized at Low Heating Temperatures|S. J. Singh,J. Shimoyama,A. Yamamoto,H. Ogino,K. Kishio###
(1489304, 1489310)
Transition Temperature and Upper Critical Field in SmFeAsO1-xFx Synthesized at Low Heating Temperatures.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[103.0, 900, 'deg', 2],[118.0, 300, 'deg', 3],[215.0, 57.8, 'K', 4],[264.0, 0.2, ',', 5],[281.0, -8, 'T', 5],[296.0, 10, 'angstrom', 5],[334.0, 0.5, 'T', 6]

SmFeAsO1-x
###Transition Temperature and Upper Critical Field in SmFeAsO1-xFx Synthesized at Low Heating Temperatures|S. J. Singh,J. Shimoyama,A. Yamamoto,H. Ogino,K. Kishio###
(1489373, 1489379)
 We report on the fabrication ofpolycrystalline samples of SmFeAsO1-xFx with nominal x<missing VAR> content varying in awide range of x<missing VAR>  0-0.35 synthesized at 900 deg C.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[34.0, 900, 'deg', 0],[49.0, 300, 'deg', 1],[146.0, 57.8, 'K', 2],[195.0, 0.2, ',', 3],[212.0, -8, 'T', 3],[227.0, 10, 'angstrom', 3],[265.0, 0.5, 'T', 4]

C
###Transition Temperature and Upper Critical Field in SmFeAsO1-xFx Synthesized at Low Heating Temperatures|S. J. Singh,J. Shimoyama,A. Yamamoto,H. Ogino,K. Kishio###
(1489415, 1489415)
 We report on the fabrication ofpolycrystalline samples of SmFeAsO1-xFx with nominal x<missing VAR> content varying in awide range of x<missing VAR>  0-0.35 synthesized at 900 deg C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 900, 'deg', 0],[13.0, 300, 'deg', 1],[110.0, 57.8, 'K', 2],[159.0, 0.2, ',', 3],[176.0, -8, 'T', 3],[191.0, 10, 'angstrom', 3],[229.0, 0.5, 'T', 4]

C
###Transition Temperature and Upper Critical Field in SmFeAsO1-xFx Synthesized at Low Heating Temperatures|S. J. Singh,J. Shimoyama,A. Yamamoto,H. Ogino,K. Kishio###
(1489430, 1489430)
 This synthesis temperatureis around 300 deg C lower than the conventional synthesis temperature.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 900, 'deg', 1],[2.0, 300, 'deg', 0],[95.0, 57.8, 'K', 1],[144.0, 0.2, ',', 2],[161.0, -8, 'T', 2],[176.0, 10, 'angstrom', 2],[214.0, 0.5, 'T', 3]

(Tc)
###Transition Temperature and Upper Critical Field in SmFeAsO1-xFx Synthesized at Low Heating Temperatures|S. J. Singh,J. Shimoyama,A. Yamamoto,H. Ogino,K. Kishio###
(1489464, 1489466)
 Thevariation in the lattice parameters and transition temperature (Tc) of variousF-doped samples indicates that reduction of the unit cell volume (V) seems tobe the main reason for the rise of Tc up to 57.8 K.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 900, 'deg', 2],[36.0, 300, 'deg', 1],[59.0, 57.8, 'K', 0],[108.0, 0.2, ',', 1],[125.0, -8, 'T', 1],[140.0, 10, 'angstrom', 1],[178.0, 0.5, 'T', 2]

F
###Transition Temperature and Upper Critical Field in SmFeAsO1-xFx Synthesized at Low Heating Temperatures|S. J. Singh,J. Shimoyama,A. Yamamoto,H. Ogino,K. Kishio###
(1489473, 1489473)
 Thevariation in the lattice parameters and transition temperature (Tc) of variousF-doped samples indicates that reduction of the unit cell volume (V) seems tobe the main reason for the rise of Tc up to 57.8 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 900, 'deg', 2],[45.0, 300, 'deg', 1],[52.0, 57.8, 'K', 0],[101.0, 0.2, ',', 1],[118.0, -8, 'T', 1],[133.0, 10, 'angstrom', 1],[171.0, 0.5, 'T', 2]

(V)
###Transition Temperature and Upper Critical Field in SmFeAsO1-xFx Synthesized at Low Heating Temperatures|S. J. Singh,J. Shimoyama,A. Yamamoto,H. Ogino,K. Kishio###
(1489495, 1489497)
 Thevariation in the lattice parameters and transition temperature (Tc) of variousF-doped samples indicates that reduction of the unit cell volume (V) seems tobe the main reason for the rise of Tc up to 57.8 K.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 900, 'deg', 2],[67.0, 300, 'deg', 1],[28.0, 57.8, 'K', 0],[77.0, 0.2, ',', 1],[94.0, -8, 'T', 1],[109.0, 10, 'angstrom', 1],[147.0, 0.5, 'T', 2]

Tc
###Transition Temperature and Upper Critical Field in SmFeAsO1-xFx Synthesized at Low Heating Temperatures|S. J. Singh,J. Shimoyama,A. Yamamoto,H. Ogino,K. Kishio###
(1489520, 1489520)
 Thevariation in the lattice parameters and transition temperature (Tc) of variousF-doped samples indicates that reduction of the unit cell volume (V) seems tobe the main reason for the rise of Tc up to 57.8 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 900, 'deg', 2],[92.0, 300, 'deg', 1],[5.0, 57.8, 'K', 0],[54.0, 0.2, ',', 1],[71.0, -8, 'T', 1],[86.0, 10, 'angstrom', 1],[124.0, 0.5, 'T', 2]

F
###Transition Temperature and Upper Critical Field in SmFeAsO1-xFx Synthesized at Low Heating Temperatures|S. J. Singh,J. Shimoyama,A. Yamamoto,H. Ogino,K. Kishio###
(1489563, 1489563)
 Magnetoresistancemeasurements showed that the upper critical field slope (d<missing VAR>Hc2/dT) increasedwith increasing F concentration up to x<missing VAR>  0.2, where it reached a maximum valueof -8 T/K corresponding to a coherence length of 10 angstrom.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 900, 'deg', 3],[135.0, 300, 'deg', 2],[38.0, 57.8, 'K', 1],[11.0, 0.2, ',', 0],[28.0, -8, 'T', 0],[43.0, 10, 'angstrom', 0],[81.0, 0.5, 'T', 1]

K
###Transition Temperature and Upper Critical Field in SmFeAsO1-xFx Synthesized at Low Heating Temperatures|S. J. Singh,J. Shimoyama,A. Yamamoto,H. Ogino,K. Kishio###
(1489593, 1489593)
 Magnetoresistancemeasurements showed that the upper critical field slope (d<missing VAR>Hc2/dT) increasedwith increasing F concentration up to x<missing VAR>  0.2, where it reached a maximum valueof -8 T/K corresponding to a coherence length of 10 angstrom.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[180.0, 900, 'deg', 3],[165.0, 300, 'deg', 2],[68.0, 57.8, 'K', 1],[19.0, 0.2, ',', 0],[2.0, -8, 'T', 0],[13.0, 10, 'angstrom', 0],[51.0, 0.5, 'T', 1]

At
###Transition Temperature and Upper Critical Field in SmFeAsO1-xFx Synthesized at Low Heating Temperatures|S. J. Singh,J. Shimoyama,A. Yamamoto,H. Ogino,K. Kishio###
(1489609, 1489609)
 At still higher Fdoping levels, d<missing VAR>Hc2/dT and the low field Jc decreased; above 0.5 T, however, Jchad almost the same value.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[196.0, 900, 'deg', 4],[181.0, 300, 'deg', 3],[84.0, 57.8, 'K', 2],[35.0, 0.2, ',', 1],[18.0, -8, 'T', 1],[3.0, 10, 'angstrom', 1],[35.0, 0.5, 'T', 0]

F
###Transition Temperature and Upper Critical Field in SmFeAsO1-xFx Synthesized at Low Heating Temperatures|S. J. Singh,J. Shimoyama,A. Yamamoto,H. Ogino,K. Kishio###
(1489615, 1489615)
 At still higher Fdoping levels, d<missing VAR>Hc2/dT and the low field Jc decreased; above 0.5 T, however, Jchad almost the same value.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[202.0, 900, 'deg', 4],[187.0, 300, 'deg', 3],[90.0, 57.8, 'K', 2],[41.0, 0.2, ',', 1],[24.0, -8, 'T', 1],[9.0, 10, 'angstrom', 1],[29.0, 0.5, 'T', 0]

FeF2
###Transition Temperature and Upper Critical Field in SmFeAsO1-xFx Synthesized at Low Heating Temperatures|S. J. Singh,J. Shimoyama,A. Yamamoto,H. Ogino,K. Kishio###
(1489696, 1489698)
 Compared with previous reports, the presentsynthesis route with low synthesis temperatures and commonly available FeF2 asthe source of F is more effective at introducing F into the SmFeAsO system andthereby resulting in improved superconducting properties for the system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[283.0, 900, 'deg', 5],[268.0, 300, 'deg', 4],[171.0, 57.8, 'K', 3],[122.0, 0.2, ',', 2],[105.0, -8, 'T', 2],[90.0, 10, 'angstrom', 2],[52.0, 0.5, 'T', 1]

F
###Transition Temperature and Upper Critical Field in SmFeAsO1-xFx Synthesized at Low Heating Temperatures|S. J. Singh,J. Shimoyama,A. Yamamoto,H. Ogino,K. Kishio###
(1489709, 1489709)
 Compared with previous reports, the presentsynthesis route with low synthesis temperatures and commonly available FeF2 asthe source of F is more effective at introducing F into the SmFeAsO system andthereby resulting in improved superconducting properties for the system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[296.0, 900, 'deg', 5],[281.0, 300, 'deg', 4],[184.0, 57.8, 'K', 3],[135.0, 0.2, ',', 2],[118.0, -8, 'T', 2],[103.0, 10, 'angstrom', 2],[65.0, 0.5, 'T', 1]

F
###Transition Temperature and Upper Critical Field in SmFeAsO1-xFx Synthesized at Low Heating Temperatures|S. J. Singh,J. Shimoyama,A. Yamamoto,H. Ogino,K. Kishio###
(1489721, 1489721)
 Compared with previous reports, the presentsynthesis route with low synthesis temperatures and commonly available FeF2 asthe source of F is more effective at introducing F into the SmFeAsO system andthereby resulting in improved superconducting properties for the system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[308.0, 900, 'deg', 5],[293.0, 300, 'deg', 4],[196.0, 57.8, 'K', 3],[147.0, 0.2, ',', 2],[130.0, -8, 'T', 2],[115.0, 10, 'angstrom', 2],[77.0, 0.5, 'T', 1]

SmFeAsO
###Transition Temperature and Upper Critical Field in SmFeAsO1-xFx Synthesized at Low Heating Temperatures|S. J. Singh,J. Shimoyama,A. Yamamoto,H. Ogino,K. Kishio###
(1489727, 1489730)
 Compared with previous reports, the presentsynthesis route with low synthesis temperatures and commonly available FeF2 asthe source of F is more effective at introducing F into the SmFeAsO system andthereby resulting in improved superconducting properties for the system.
Featurization terminated normally.
0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[314.0, 900, 'deg', 5],[299.0, 300, 'deg', 4],[202.0, 57.8, 'K', 3],[153.0, 0.2, ',', 2],[136.0, -8, 'T', 2],[121.0, 10, 'angstrom', 2],[83.0, 0.5, 'T', 1]

In
###Transition Temperature and Upper Critical Field in SmFeAsO1-xFx Synthesized at Low Heating Temperatures|S. J. Singh,J. Shimoyama,A. Yamamoto,H. Ogino,K. Kishio###
(1489756, 1489756)
 Inaddition, this new sample preparation method also reduces unnecessary problemssuch as the evaporation of F and reaction between the crucible andsuperconductor during the solid-state reaction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[343.0, 900, 'deg', 6],[328.0, 300, 'deg', 5],[231.0, 57.8, 'K', 4],[182.0, 0.2, ',', 3],[165.0, -8, 'T', 3],[150.0, 10, 'angstrom', 3],[112.0, 0.5, 'T', 2]

F
###Transition Temperature and Upper Critical Field in SmFeAsO1-xFx Synthesized at Low Heating Temperatures|S. J. Singh,J. Shimoyama,A. Yamamoto,H. Ogino,K. Kishio###
(1489791, 1489791)
 Inaddition, this new sample preparation method also reduces unnecessary problemssuch as the evaporation of F and reaction between the crucible andsuperconductor during the solid-state reaction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[378.0, 900, 'deg', 6],[363.0, 300, 'deg', 5],[266.0, 57.8, 'K', 4],[217.0, 0.2, ',', 3],[200.0, -8, 'T', 3],[185.0, 10, 'angstrom', 3],[147.0, 0.5, 'T', 2]

Sr2IrO4
###Anisotropic magnetoresistance in antiferromagnetic semiconductor Sr2IrO4 epitaxial heterostructure|X. Marti,I. Fina,Di Yi,Jian Liu,Jiun-Haw Chu,C. Rayan-Serrao,S. Suresha,J. Železný,T. Jungwirth,J. Fontcuberta,R. Ramesh###
(1489837, 1489841)
Anisotropic magnetoresistance in antiferromagnetic semiconductor Sr2IrO4 epitaxial heterostructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 70, 'years', 1]

Ni
###Anisotropic magnetoresistance in antiferromagnetic semiconductor Sr2IrO4 epitaxial heterostructure|X. Marti,I. Fina,Di Yi,Jian Liu,Jiun-Haw Chu,C. Rayan-Serrao,S. Suresha,J. Železný,T. Jungwirth,J. Fontcuberta,R. Ramesh###
(1489877, 1489877)
 Lord Kelvin with his discovery of the anisotropic magnetoresistance (AMR)phenomenon in Ni and Fe was 70 years ahead of the formulation of relativisticquantum mechanics the effect stems from, and almost one and a half centuryahead of spintronics whose first commercial applications relied on the AMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 70, 'years', 0]

Fe
###Anisotropic magnetoresistance in antiferromagnetic semiconductor Sr2IrO4 epitaxial heterostructure|X. Marti,I. Fina,Di Yi,Jian Liu,Jiun-Haw Chu,C. Rayan-Serrao,S. Suresha,J. Železný,T. Jungwirth,J. Fontcuberta,R. Ramesh###
(1489881, 1489881)
 Lord Kelvin with his discovery of the anisotropic magnetoresistance (AMR)phenomenon in Ni and Fe was 70 years ahead of the formulation of relativisticquantum mechanics the effect stems from, and almost one and a half centuryahead of spintronics whose first commercial applications relied on the AMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 70, 'years', 0]

F
###Anisotropic magnetoresistance in antiferromagnetic semiconductor Sr2IrO4 epitaxial heterostructure|X. Marti,I. Fina,Di Yi,Jian Liu,Jiun-Haw Chu,C. Rayan-Serrao,S. Suresha,J. Železný,T. Jungwirth,J. Fontcuberta,R. Ramesh###
(1490129, 1490129)
 Our work demonstrates that even thisseemingly generic notion of the AMR phenomenon needs revisiting as we observethe ohmic AMR effect in a nano-scale film of an antiferromagnetic (AFM)semiconductor Sr2IrO4 (SIO).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[245.0, 70, 'years', 2]

Sr2IrO4
###Anisotropic magnetoresistance in antiferromagnetic semiconductor Sr2IrO4 epitaxial heterostructure|X. Marti,I. Fina,Di Yi,Jian Liu,Jiun-Haw Chu,C. Rayan-Serrao,S. Suresha,J. Železný,T. Jungwirth,J. Fontcuberta,R. Ramesh###
(1490136, 1490140)
 Our work demonstrates that even thisseemingly generic notion of the AMR phenomenon needs revisiting as we observethe ohmic AMR effect in a nano-scale film of an antiferromagnetic (AFM)semiconductor Sr2IrO4 (SIO).
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[252.0, 70, 'years', 2]

(SIO)
###Anisotropic magnetoresistance in antiferromagnetic semiconductor Sr2IrO4 epitaxial heterostructure|X. Marti,I. Fina,Di Yi,Jian Liu,Jiun-Haw Chu,C. Rayan-Serrao,S. Suresha,J. Železný,T. Jungwirth,J. Fontcuberta,R. Ramesh###
(1490142, 1490146)
 Our work demonstrates that even thisseemingly generic notion of the AMR phenomenon needs revisiting as we observethe ohmic AMR effect in a nano-scale film of an antiferromagnetic (AFM)semiconductor Sr2IrO4 (SIO).
Featurization successful!
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[258.0, 70, 'years', 2]

F
###Anisotropic magnetoresistance in antiferromagnetic semiconductor Sr2IrO4 epitaxial heterostructure|X. Marti,I. Fina,Di Yi,Jian Liu,Jiun-Haw Chu,C. Rayan-Serrao,S. Suresha,J. Železný,T. Jungwirth,J. Fontcuberta,R. Ramesh###
(1490179, 1490179)
 Our work opens the recently proposed path forintegrating semiconducting and spintronic technologies in AFMs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[295.0, 70, 'years', 3]

SIO
###Anisotropic magnetoresistance in antiferromagnetic semiconductor Sr2IrO4 epitaxial heterostructure|X. Marti,I. Fina,Di Yi,Jian Liu,Jiun-Haw Chu,C. Rayan-Serrao,S. Suresha,J. Železný,T. Jungwirth,J. Fontcuberta,R. Ramesh###
(1490183, 1490185)
 SIO is aparticularly favorable material for exploring this path since itssemiconducting nature is entangled with the AFM<missing VAR> order and strong spin-orbitcoupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[299.0, 70, 'years', 4]

F
###Anisotropic magnetoresistance in antiferromagnetic semiconductor Sr2IrO4 epitaxial heterostructure|X. Marti,I. Fina,Di Yi,Jian Liu,Jiun-Haw Chu,C. Rayan-Serrao,S. Suresha,J. Železný,T. Jungwirth,J. Fontcuberta,R. Ramesh###
(1490224, 1490224)
 SIO is aparticularly favorable material for exploring this path since itssemiconducting nature is entangled with the AFM<missing VAR> order and strong spin-orbitcoupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[340.0, 70, 'years', 4]

SIO
###Anisotropic magnetoresistance in antiferromagnetic semiconductor Sr2IrO4 epitaxial heterostructure|X. Marti,I. Fina,Di Yi,Jian Liu,Jiun-Haw Chu,C. Rayan-Serrao,S. Suresha,J. Železný,T. Jungwirth,J. Fontcuberta,R. Ramesh###
(1490263, 1490265)
 For the observation of the low-field Ohmic AMR in SIO we prepared anepitaxial heterostructure comprising a nano-scale SIO film on top of anepilayer of a FM<missing VAR> metal La2/3Sr1/3MnO3 (LSMO).
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[379.0, 70, 'years', 5]

SIO
###Anisotropic magnetoresistance in antiferromagnetic semiconductor Sr2IrO4 epitaxial heterostructure|X. Marti,I. Fina,Di Yi,Jian Liu,Jiun-Haw Chu,C. Rayan-Serrao,S. Suresha,J. Železný,T. Jungwirth,J. Fontcuberta,R. Ramesh###
(1490286, 1490288)
 For the observation of the low-field Ohmic AMR in SIO we prepared anepitaxial heterostructure comprising a nano-scale SIO film on top of anepilayer of a FM<missing VAR> metal La2/3Sr1/3MnO3 (LSMO).
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[402.0, 70, 'years', 5]

F
###Anisotropic magnetoresistance in antiferromagnetic semiconductor Sr2IrO4 epitaxial heterostructure|X. Marti,I. Fina,Di Yi,Jian Liu,Jiun-Haw Chu,C. Rayan-Serrao,S. Suresha,J. Železný,T. Jungwirth,J. Fontcuberta,R. Ramesh###
(1490307, 1490307)
 For the observation of the low-field Ohmic AMR in SIO we prepared anepitaxial heterostructure comprising a nano-scale SIO film on top of anepilayer of a FM<missing VAR> metal La2/3Sr1/3MnO3 (LSMO).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[423.0, 70, 'years', 5]

La2
###Anisotropic magnetoresistance in antiferromagnetic semiconductor Sr2IrO4 epitaxial heterostructure|X. Marti,I. Fina,Di Yi,Jian Liu,Jiun-Haw Chu,C. Rayan-Serrao,S. Suresha,J. Železný,T. Jungwirth,J. Fontcuberta,R. Ramesh###
(1490312, 1490313)
 For the observation of the low-field Ohmic AMR in SIO we prepared anepitaxial heterostructure comprising a nano-scale SIO film on top of anepilayer of a FM<missing VAR> metal La2/3Sr1/3MnO3 (LSMO).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[428.0, 70, 'years', 5]

Sr1
###Anisotropic magnetoresistance in antiferromagnetic semiconductor Sr2IrO4 epitaxial heterostructure|X. Marti,I. Fina,Di Yi,Jian Liu,Jiun-Haw Chu,C. Rayan-Serrao,S. Suresha,J. Železný,T. Jungwirth,J. Fontcuberta,R. Ramesh###
(1490316, 1490317)
 For the observation of the low-field Ohmic AMR in SIO we prepared anepitaxial heterostructure comprising a nano-scale SIO film on top of anepilayer of a FM<missing VAR> metal La2/3Sr1/3MnO3 (LSMO).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[432.0, 70, 'years', 5]

MnO3
###Anisotropic magnetoresistance in antiferromagnetic semiconductor Sr2IrO4 epitaxial heterostructure|X. Marti,I. Fina,Di Yi,Jian Liu,Jiun-Haw Chu,C. Rayan-Serrao,S. Suresha,J. Železný,T. Jungwirth,J. Fontcuberta,R. Ramesh###
(1490320, 1490322)
 For the observation of the low-field Ohmic AMR in SIO we prepared anepitaxial heterostructure comprising a nano-scale SIO film on top of anepilayer of a FM<missing VAR> metal La2/3Sr1/3MnO3 (LSMO).
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[436.0, 70, 'years', 5]

O
###Anisotropic magnetoresistance in antiferromagnetic semiconductor Sr2IrO4 epitaxial heterostructure|X. Marti,I. Fina,Di Yi,Jian Liu,Jiun-Haw Chu,C. Rayan-Serrao,S. Suresha,J. Železný,T. Jungwirth,J. Fontcuberta,R. Ramesh###
(1490328, 1490328)
 For the observation of the low-field Ohmic AMR in SIO we prepared anepitaxial heterostructure comprising a nano-scale SIO film on top of anepilayer of a FM<missing VAR> metal La2/3Sr1/3MnO3 (LSMO).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[444.0, 70, 'years', 5]

F
###Anisotropic magnetoresistance in antiferromagnetic semiconductor Sr2IrO4 epitaxial heterostructure|X. Marti,I. Fina,Di Yi,Jian Liu,Jiun-Haw Chu,C. Rayan-Serrao,S. Suresha,J. Železný,T. Jungwirth,J. Fontcuberta,R. Ramesh###
(1490354, 1490354)
 This allows the magnetic fieldcontrol of the orientation of AFM<missing VAR> spins in SIO via the exchange spring effectat the FM<missing VAR>-AFM<missing VAR> interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[470.0, 70, 'years', 6]

SIO
###Anisotropic magnetoresistance in antiferromagnetic semiconductor Sr2IrO4 epitaxial heterostructure|X. Marti,I. Fina,Di Yi,Jian Liu,Jiun-Haw Chu,C. Rayan-Serrao,S. Suresha,J. Železný,T. Jungwirth,J. Fontcuberta,R. Ramesh###
(1490361, 1490363)
 This allows the magnetic fieldcontrol of the orientation of AFM<missing VAR> spins in SIO via the exchange spring effectat the FM<missing VAR>-AFM<missing VAR> interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[477.0, 70, 'years', 6]

F
###Anisotropic magnetoresistance in antiferromagnetic semiconductor Sr2IrO4 epitaxial heterostructure|X. Marti,I. Fina,Di Yi,Jian Liu,Jiun-Haw Chu,C. Rayan-Serrao,S. Suresha,J. Železný,T. Jungwirth,J. Fontcuberta,R. Ramesh###
(1490380, 1490380)
 This allows the magnetic fieldcontrol of the orientation of AFM<missing VAR> spins in SIO via the exchange spring effectat the FM<missing VAR>-AFM<missing VAR> interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[496.0, 70, 'years', 6]

F
###Anisotropic magnetoresistance in antiferromagnetic semiconductor Sr2IrO4 epitaxial heterostructure|X. Marti,I. Fina,Di Yi,Jian Liu,Jiun-Haw Chu,C. Rayan-Serrao,S. Suresha,J. Železný,T. Jungwirth,J. Fontcuberta,R. Ramesh###
(1490384, 1490384)
 This allows the magnetic fieldcontrol of the orientation of AFM<missing VAR> spins in SIO via the exchange spring effectat the FM<missing VAR>-AFM<missing VAR> interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[500.0, 70, 'years', 6]

Si
###Quantum corrections to conductivity in Si doped ZnO thin films|Amit K. Das,R. S. Ajimsha###
(1490408, 1490408)
Quantum corrections to conductivity in Si doped ZnO thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 0.4, 'to', 1],[79.0, 6.6, 'x', 2],[85.0, 4.7, 'x', 2],[109.0, 0.4, 'to', 2],[111.0, 2, '%', 2],[158.0, 3, 'x', 3],[162.0, 4, 'x', 3],[202.0, 4.2, 'K', 4],[227.0, 0.4, ',', 4],[229.0, 6, 'and', 4],[231.0, 10, '%', 4],[259.0, 0.6, ',', 5],[261.0, 0.9, 'and', 5],[263.0, 2, '%', 5],[320.0, 0.5, 'T', 6]

ZnO
###Quantum corrections to conductivity in Si doped ZnO thin films|Amit K. Das,R. S. Ajimsha###
(1490412, 1490413)
Quantum corrections to conductivity in Si doped ZnO thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 0.4, 'to', 1],[74.0, 6.6, 'x', 2],[80.0, 4.7, 'x', 2],[104.0, 0.4, 'to', 2],[106.0, 2, '%', 2],[153.0, 3, 'x', 3],[157.0, 4, 'x', 3],[197.0, 4.2, 'K', 4],[222.0, 0.4, ',', 4],[224.0, 6, 'and', 4],[226.0, 10, '%', 4],[254.0, 0.6, ',', 5],[256.0, 0.9, 'and', 5],[258.0, 2, '%', 5],[315.0, 0.5, 'T', 6]

Si
###Quantum corrections to conductivity in Si doped ZnO thin films|Amit K. Das,R. S. Ajimsha###
(1490420, 1490420)
 Si doped ZnO thin films with Si concentrations ranging from 0.4 to 10 % havebeen grown by sequential pulsed laser deposition on sapphire substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 0.4, 'to', 0],[67.0, 6.6, 'x', 1],[73.0, 4.7, 'x', 1],[97.0, 0.4, 'to', 1],[99.0, 2, '%', 1],[146.0, 3, 'x', 2],[150.0, 4, 'x', 2],[190.0, 4.2, 'K', 3],[215.0, 0.4, ',', 3],[217.0, 6, 'and', 3],[219.0, 10, '%', 3],[247.0, 0.6, ',', 4],[249.0, 0.9, 'and', 4],[251.0, 2, '%', 4],[308.0, 0.5, 'T', 5]

ZnO
###Quantum corrections to conductivity in Si doped ZnO thin films|Amit K. Das,R. S. Ajimsha###
(1490424, 1490425)
 Si doped ZnO thin films with Si concentrations ranging from 0.4 to 10 % havebeen grown by sequential pulsed laser deposition on sapphire substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 0.4, 'to', 0],[62.0, 6.6, 'x', 1],[68.0, 4.7, 'x', 1],[92.0, 0.4, 'to', 1],[94.0, 2, '%', 1],[141.0, 3, 'x', 2],[145.0, 4, 'x', 2],[185.0, 4.2, 'K', 3],[210.0, 0.4, ',', 3],[212.0, 6, 'and', 3],[214.0, 10, '%', 3],[242.0, 0.6, ',', 4],[244.0, 0.9, 'and', 4],[246.0, 2, '%', 4],[303.0, 0.5, 'T', 5]

Si
###Quantum corrections to conductivity in Si doped ZnO thin films|Amit K. Das,R. S. Ajimsha###
(1490433, 1490433)
 Si doped ZnO thin films with Si concentrations ranging from 0.4 to 10 % havebeen grown by sequential pulsed laser deposition on sapphire substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 0.4, 'to', 0],[54.0, 6.6, 'x', 1],[60.0, 4.7, 'x', 1],[84.0, 0.4, 'to', 1],[86.0, 2, '%', 1],[133.0, 3, 'x', 2],[137.0, 4, 'x', 2],[177.0, 4.2, 'K', 3],[202.0, 0.4, ',', 3],[204.0, 6, 'and', 3],[206.0, 10, '%', 3],[234.0, 0.6, ',', 4],[236.0, 0.9, 'and', 4],[238.0, 2, '%', 4],[295.0, 0.5, 'T', 5]

Si
###Quantum corrections to conductivity in Si doped ZnO thin films|Amit K. Das,R. S. Ajimsha###
(1490507, 1490507)
 Theresistivity of the films first decreased from  6.6x10-3 to 4.7x10-4 ohm-cm asthe Si concentration was increased from  0.4 to 2% and then it increased withfurther increase in Si concentration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 0.4, 'to', 1],[20.0, 6.6, 'x', 0],[14.0, 4.7, 'x', 0],[10.0, 0.4, 'to', 0],[12.0, 2, '%', 0],[59.0, 3, 'x', 1],[63.0, 4, 'x', 1],[103.0, 4.2, 'K', 2],[128.0, 0.4, ',', 2],[130.0, 6, 'and', 2],[132.0, 10, '%', 2],[160.0, 0.6, ',', 3],[162.0, 0.9, 'and', 3],[164.0, 2, '%', 3],[221.0, 0.5, 'T', 4]

Si
###Quantum corrections to conductivity in Si doped ZnO thin films|Amit K. Das,R. S. Ajimsha###
(1490539, 1490539)
 Theresistivity of the films first decreased from  6.6x10-3 to 4.7x10-4 ohm-cm asthe Si concentration was increased from  0.4 to 2% and then it increased withfurther increase in Si concentration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 0.4, 'to', 1],[52.0, 6.6, 'x', 0],[46.0, 4.7, 'x', 0],[22.0, 0.4, 'to', 0],[20.0, 2, '%', 0],[27.0, 3, 'x', 1],[31.0, 4, 'x', 1],[71.0, 4.2, 'K', 2],[96.0, 0.4, ',', 2],[98.0, 6, 'and', 2],[100.0, 10, '%', 2],[128.0, 0.6, ',', 3],[130.0, 0.9, 'and', 3],[132.0, 2, '%', 3],[189.0, 0.5, 'T', 4]

Si
###Quantum corrections to conductivity in Si doped ZnO thin films|Amit K. Das,R. S. Ajimsha###
(1490642, 1490642)
However, temperature dependent resistivity measurements in the range from 300to 4.2 K revealed negative temperature coefficient of resistivity (TCR) for the0.4, 6 and 10% Si doped ZnO films in the entire measurement temperature range.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[202.0, 0.4, 'to', 3],[155.0, 6.6, 'x', 2],[149.0, 4.7, 'x', 2],[125.0, 0.4, 'to', 2],[123.0, 2, '%', 2],[76.0, 3, 'x', 1],[72.0, 4, 'x', 1],[32.0, 4.2, 'K', 0],[7.0, 0.4, ',', 0],[5.0, 6, 'and', 0],[3.0, 10, '%', 0],[25.0, 0.6, ',', 1],[27.0, 0.9, 'and', 1],[29.0, 2, '%', 1],[86.0, 0.5, 'T', 2]

ZnO
###Quantum corrections to conductivity in Si doped ZnO thin films|Amit K. Das,R. S. Ajimsha###
(1490646, 1490647)
However, temperature dependent resistivity measurements in the range from 300to 4.2 K revealed negative temperature coefficient of resistivity (TCR) for the0.4, 6 and 10% Si doped ZnO films in the entire measurement temperature range.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[206.0, 0.4, 'to', 3],[159.0, 6.6, 'x', 2],[153.0, 4.7, 'x', 2],[129.0, 0.4, 'to', 2],[127.0, 2, '%', 2],[80.0, 3, 'x', 1],[76.0, 4, 'x', 1],[36.0, 4.2, 'K', 0],[11.0, 0.4, ',', 0],[9.0, 6, 'and', 0],[7.0, 10, '%', 0],[20.0, 0.6, ',', 1],[22.0, 0.9, 'and', 1],[24.0, 2, '%', 1],[81.0, 0.5, 'T', 2]

Si
###Quantum corrections to conductivity in Si doped ZnO thin films|Amit K. Das,R. S. Ajimsha###
(1490674, 1490674)
The 0.6, 0.9 and 2% Si doped films showed a transition from negative topositive TCR with increasing temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[234.0, 0.4, 'to', 4],[187.0, 6.6, 'x', 3],[181.0, 4.7, 'x', 3],[157.0, 0.4, 'to', 3],[155.0, 2, '%', 3],[108.0, 3, 'x', 2],[104.0, 4, 'x', 2],[64.0, 4.2, 'K', 1],[39.0, 0.4, ',', 1],[37.0, 6, 'and', 1],[35.0, 10, '%', 1],[7.0, 0.6, ',', 0],[5.0, 0.9, 'and', 0],[3.0, 2, '%', 0],[54.0, 0.5, 'T', 1]

Al2O3/SrTiO3
###A high-mobility two-dimensional electron gas at the heteroepitaxial spinel/perovskite complex oxide interface of γ-Al2O3/SrTiO3|Y. Z. Chen,N. Bovet,F. Trier,D. V. Christensen,F. M. Qu,N. H. Andersen,T. Kasama,W. Zhang,R. Giraud,J. Dufouleur,T. S. Jespersen,J. R. Sun,A. Smith,J. Nygård,L. Lu,B. Büchner,B. G. Shen,S. Linderoth,N. Pryds###
(1490867, 1490875)
A high-mobility two-dimensional electron gas at the heteroepitaxial spinel/perovskite complex oxide interface of -Al2O3/SrTiO3.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[120.0, 1, ',', 2],[187.0, 2, 'DEG', 3],[337.0, 2, 'DEG', 5],[365.0, 0.9, 'nm', 5]

LaAlO3
###A high-mobility two-dimensional electron gas at the heteroepitaxial spinel/perovskite complex oxide interface of γ-Al2O3/SrTiO3|Y. Z. Chen,N. Bovet,F. Trier,D. V. Christensen,F. M. Qu,N. H. Andersen,T. Kasama,W. Zhang,R. Giraud,J. Dufouleur,T. S. Jespersen,J. R. Sun,A. Smith,J. Nygård,L. Lu,B. Büchner,B. G. Shen,S. Linderoth,N. Pryds###
(1490923, 1490926)
 The discovery of two-dimensional electron gases (2DEGs) at theheterointerface between two insulating perovskite-type oxides, such as LaAlO3and SrTiO3, provides opportunities for a new generation of all-oxide electronicand photonic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 1, ',', 1],[136.0, 2, 'DEG', 2],[286.0, 2, 'DEG', 4],[314.0, 0.9, 'nm', 4]

SrTiO3
###A high-mobility two-dimensional electron gas at the heteroepitaxial spinel/perovskite complex oxide interface of γ-Al2O3/SrTiO3|Y. Z. Chen,N. Bovet,F. Trier,D. V. Christensen,F. M. Qu,N. H. Andersen,T. Kasama,W. Zhang,R. Giraud,J. Dufouleur,T. S. Jespersen,J. R. Sun,A. Smith,J. Nygård,L. Lu,B. Büchner,B. G. Shen,S. Linderoth,N. Pryds###
(1490931, 1490934)
 The discovery of two-dimensional electron gases (2DEGs) at theheterointerface between two insulating perovskite-type oxides, such as LaAlO3and SrTiO3, provides opportunities for a new generation of all-oxide electronicand photonic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 1, ',', 1],[128.0, 2, 'DEG', 2],[278.0, 2, 'DEG', 4],[306.0, 0.9, 'nm', 4]

V
###A high-mobility two-dimensional electron gas at the heteroepitaxial spinel/perovskite complex oxide interface of γ-Al2O3/SrTiO3|Y. Z. Chen,N. Bovet,F. Trier,D. V. Christensen,F. M. Qu,N. H. Andersen,T. Kasama,W. Zhang,R. Giraud,J. Dufouleur,T. S. Jespersen,J. R. Sun,A. Smith,J. Nygård,L. Lu,B. Büchner,B. G. Shen,S. Linderoth,N. Pryds###
(1491001, 1491001)
 However, significant improvement of the interfacialelectron mobility beyond the current value of approximately 1,000 cm2V-1s<missing VAR>-1 (atlow temperatures), remains a key challenge for fundamental as well as appliedresearch of complex oxides.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 1, ',', 0],[61.0, 2, 'DEG', 1],[211.0, 2, 'DEG', 3],[239.0, 0.9, 'nm', 3]

SrTiO3
###A high-mobility two-dimensional electron gas at the heteroepitaxial spinel/perovskite complex oxide interface of γ-Al2O3/SrTiO3|Y. Z. Chen,N. Bovet,F. Trier,D. V. Christensen,F. M. Qu,N. H. Andersen,T. Kasama,W. Zhang,R. Giraud,J. Dufouleur,T. S. Jespersen,J. R. Sun,A. Smith,J. Nygård,L. Lu,B. Büchner,B. G. Shen,S. Linderoth,N. Pryds###
(1491075, 1491078)
 Here, we present a new type of 2DEG created at theheterointerface between SrTiO3 and a spinel gamma-Al2O3 epitaxial film withexcellent quality and compatible oxygen ions sublattices.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 1, ',', 1],[13.0, 2, 'DEG', 0],[134.0, 2, 'DEG', 2],[162.0, 0.9, 'nm', 2]

Al2O3
###A high-mobility two-dimensional electron gas at the heteroepitaxial spinel/perovskite complex oxide interface of γ-Al2O3/SrTiO3|Y. Z. Chen,N. Bovet,F. Trier,D. V. Christensen,F. M. Qu,N. H. Andersen,T. Kasama,W. Zhang,R. Giraud,J. Dufouleur,T. S. Jespersen,J. R. Sun,A. Smith,J. Nygård,L. Lu,B. Büchner,B. G. Shen,S. Linderoth,N. Pryds###
(1491088, 1491091)
 Here, we present a new type of 2DEG created at theheterointerface between SrTiO3 and a spinel gamma-Al2O3 epitaxial film withexcellent quality and compatible oxygen ions sublattices.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 1, ',', 1],[26.0, 2, 'DEG', 0],[121.0, 2, 'DEG', 2],[149.0, 0.9, 'nm', 2]

EuB6
###Lattice strain accompanying the colossal magnetoresistance effect in EuB$_6$|Rudra Sekhar Manna,Pintu Das,Mariano de Souza,Michael Lang,Jens Müller,Stephan von Molnár,Zachary Fisk###
(1491325, 1491327)
Lattice strain accompanying the colossal magnetoresistance effect in EuB6.
Featurization terminated normally.
0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuB6
###Lattice strain accompanying the colossal magnetoresistance effect in EuB$_6$|Rudra Sekhar Manna,Pintu Das,Mariano de Souza,Michael Lang,Jens Müller,Stephan von Molnár,Zachary Fisk###
(1491365, 1491367)
 The coupling of magnetic and electronic degrees of freedom to the crystallattice in the ferromagnetic semimetal EuB6, which exhibits a complexferromagnetic order and a colossal magnetoresistance (CMR) effect, %, verylikely involving magnetic polarons, is studied by high-resolution thermalexpansion and magnetostriction experiments.
Featurization terminated normally.
0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Lattice strain accompanying the colossal magnetoresistance effect in EuB$_6$|Rudra Sekhar Manna,Pintu Das,Mariano de Souza,Michael Lang,Jens Müller,Stephan von Molnár,Zachary Fisk###
(1491392, 1491392)
 The coupling of magnetic and electronic degrees of freedom to the crystallattice in the ferromagnetic semimetal EuB6, which exhibits a complexferromagnetic order and a colossal magnetoresistance (CMR) effect, %, verylikely involving magnetic polarons, is studied by high-resolution thermalexpansion and magnetostriction experiments.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuB6
###Lattice strain accompanying the colossal magnetoresistance effect in EuB$_6$|Rudra Sekhar Manna,Pintu Das,Mariano de Souza,Michael Lang,Jens Müller,Stephan von Molnár,Zachary Fisk###
(1491437, 1491439)
 EuB6 may be viewed as a modelsystem, where pure magnetism-tuned transport and the response of the crystallattice can be studied in a comparatively simple environment,i.e.
Featurization terminated normally.
0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Lattice strain accompanying the colossal magnetoresistance effect in EuB$_6$|Rudra Sekhar Manna,Pintu Das,Mariano de Souza,Michael Lang,Jens Müller,Stephan von Molnár,Zachary Fisk###
(1491718, 1491718)
 Astrong effect of the formation and dynamics of local magnetic clusters on thelattice parameters is suggested to be a general feature of CMR materials.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cd3As2
###Quantum transport evidence for a three-dimensional Dirac semimetal phase in Cd3As2|L. P. He,X. C. Hong,J. K. Dong,J. Pan,Z. Zhang,J. Zhang,S. Y. Li###
(1491755, 1491758)
Quantum transport evidence for a three-dimensional Dirac semimetal phase in Cd3As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 3, 'D', 3],[356.0, 3, 'D', 8]

Na3Bi
###Quantum transport evidence for a three-dimensional Dirac semimetal phase in Cd3As2|L. P. He,X. C. Hong,J. K. Dong,J. Pan,Z. Zhang,J. Zhang,S. Y. Li###
(1491918, 1491920)
 Soon after the theoreticalpredictions, the angle-resolve photoemission spectroscopy and scanningtunnelling microscopy experiments gave evidences for 3D Dirac points in Na3Biand Cd3As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 3, 'D', 0],[194.0, 3, 'D', 5]

Cd3As2
###Quantum transport evidence for a three-dimensional Dirac semimetal phase in Cd3As2|L. P. He,X. C. Hong,J. K. Dong,J. Pan,Z. Zhang,J. Zhang,S. Y. Li###
(1491925, 1491928)
 Soon after the theoreticalpredictions, the angle-resolve photoemission spectroscopy and scanningtunnelling microscopy experiments gave evidences for 3D Dirac points in Na3Biand Cd3As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 3, 'D', 0],[186.0, 3, 'D', 5]

Cd3As2
###Quantum transport evidence for a three-dimensional Dirac semimetal phase in Cd3As2|L. P. He,X. C. Hong,J. K. Dong,J. Pan,Z. Zhang,J. Zhang,S. Y. Li###
(1491945, 1491948)
 Here we report quantum transport properties of Cd3As2 singlecrystal in magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 3, 'D', 1],[166.0, 3, 'D', 4]

B
###Quantum transport evidence for a three-dimensional Dirac semimetal phase in Cd3As2|L. P. He,X. C. Hong,J. K. Dong,J. Pan,Z. Zhang,J. Zhang,S. Y. Li###
(1492060, 1492060)
 From the strong oscillatory component Delta Rxx, thelinear dependence of Landau index n<missing VAR> on 1/B gives an n<missing VAR>-axis intercept 0.58.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 3, 'D', 4],[54.0, 3, 'D', 1]

Cd3As2
###Quantum transport evidence for a three-dimensional Dirac semimetal phase in Cd3As2|L. P. He,X. C. Hong,J. K. Dong,J. Pan,Z. Zhang,J. Zhang,S. Y. Li###
(1492124, 1492127)
 Ourquantum transport result clearly reveals a nontrivial pi Berrys<missing VAR> phase, thusprovides strong bulk evidence for a 3D Dirac semimetal phase in Cd3As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[214.0, 3, 'D', 5],[10.0, 3, 'D', 0]

Bi2Sr2CaCu2O8
###Doping Dependencies of Onset Temperatures for the Pseudogap and Superconductive Fluctuation in Bi$_{2}$Sr$_{2}$CaCu$_{2}$O$_{8+δ}$, Studied from both In-Plane and Out-of-Plane Magnetoresistance Measurements|Tomohiro Usui,Daiki Fujiwara,Shintaro Adachi,Hironobu Kudo,Kosuke Murata,Haruki Kushibiki,Takao Watanabe,Kazutaka Kudo,Terukazu Nishizaki,Norio Kobayashi,Shojiro Kimura,Kazuyoshi Yamada,Tomoyuki Naito,Takashi Noji,Yoji Koike###
(1492186, 1492194)
Doping Dependencies of Onset Temperatures for the Pseudogap and Superconductive Fluctuation in Bi2Sr2CaCu2O8, Studied from both In-Plane and Out-of-Plane Magnetoresistance Measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.06666666666666667,0,0,0,0,0,0,0,0,0.13333333333333333,0,0,0,0,0,0,0,0,0.13333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Doping Dependencies of Onset Temperatures for the Pseudogap and Superconductive Fluctuation in Bi$_{2}$Sr$_{2}$CaCu$_{2}$O$_{8+δ}$, Studied from both In-Plane and Out-of-Plane Magnetoresistance Measurements|Tomohiro Usui,Daiki Fujiwara,Shintaro Adachi,Hironobu Kudo,Kosuke Murata,Haruki Kushibiki,Takao Watanabe,Kazutaka Kudo,Terukazu Nishizaki,Norio Kobayashi,Shojiro Kimura,Kazuyoshi Yamada,Tomoyuki Naito,Takashi Noji,Yoji Koike###
(1492203, 1492203)
Doping Dependencies of Onset Temperatures for the Pseudogap and Superconductive Fluctuation in Bi2Sr2CaCu2O8, Studied from both In-Plane and Out-of-Plane Magnetoresistance Measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Sr2CaCu2O8
###Doping Dependencies of Onset Temperatures for the Pseudogap and Superconductive Fluctuation in Bi$_{2}$Sr$_{2}$CaCu$_{2}$O$_{8+δ}$, Studied from both In-Plane and Out-of-Plane Magnetoresistance Measurements|Tomohiro Usui,Daiki Fujiwara,Shintaro Adachi,Hironobu Kudo,Kosuke Murata,Haruki Kushibiki,Takao Watanabe,Kazutaka Kudo,Terukazu Nishizaki,Norio Kobayashi,Shojiro Kimura,Kazuyoshi Yamada,Tomoyuki Naito,Takashi Noji,Yoji Koike###
(1492279, 1492287)
 To investigate the relationship between the pseudogap and superconductivity,we measured both the in-plane (rhoab) and out-of-plane (rhoc)resistivity for oxygen-controlled Bi2Sr2CaCu2O8deltasingle crystals subject to magnetic fields (parallel to the c<missing VAR> axis) of up to17.5 T<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.06666666666666667,0,0,0,0,0,0,0,0,0.13333333333333333,0,0,0,0,0,0,0,0,0.13333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Transport Properties of Dirac Ferromagnet|Junji Fujimoto,Hiroshi Kohno###
(1492688, 1492688)
 We propose a model ferromagnet based on the Dirac Hamiltonian in threespatial dimensions, and study its transport properties which includeanisotropic magnetoresistance (AMR) and anomalous Hall (AH) effect.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Transport Properties of Dirac Ferromagnet|Junji Fujimoto,Hiroshi Kohno###
(1492727, 1492727)
 Thisrelativistic extension allows two kinds of ferromagnetic order parameters,denoted by bmM<missing VAR> and bmS, which are distinguished by the relative signbetween the positive- and negative-energy states (at zero momentum) and becomedegenerate in the non-relativistic limit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Transport Properties of Dirac Ferromagnet|Junji Fujimoto,Hiroshi Kohno###
(1492820, 1492820)
 Because of the relativistic couplingbetween the spin and the orbital motion, both bmM<missing VAR> and bmS induceanisotropic deformations of the energy dispersion (and the Fermi surfaces) butin mutually opposite ways.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Transport Properties of Dirac Ferromagnet|Junji Fujimoto,Hiroshi Kohno###
(1492927, 1492927)
 The AMR is determined primarily by the anisotropy ofthe Fermi surface (group velocity), and secondarily by the anisotropy of thedamping; the latter becomes important for bm M<missing VAR>pmbm S, where the Fermisurfaces are isotropic.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Transport Properties of Dirac Ferromagnet|Junji Fujimoto,Hiroshi Kohno###
(1492967, 1492967)
 Even when the chemical potential lies in the gap, theAH conductivity is found to take a finite non-quantized value, sigmaij -(alpha /3pi2 hbar) epsilonijk Sk<missing VAR> , where alpha is the (effective)fine structure constant.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Transport Properties of Dirac Ferromagnet|Junji Fujimoto,Hiroshi Kohno###
(1493010, 1493010)
 Even when the chemical potential lies in the gap, theAH conductivity is found to take a finite non-quantized value, sigmaij -(alpha /3pi2 hbar) epsilonijk Sk<missing VAR> , where alpha is the (effective)fine structure constant.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###A study of the magnetotransport properties of the graphene (I. Monolayer)|M. A. Hidalgo###
(1493086, 1493086)
A study of the magnetotransport properties of the graphene (I.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###A study of the magnetotransport properties of the graphene (I. Monolayer)|M. A. Hidalgo###
(1493285, 1493285)
 Now, the study in this framework of bothphenomena in graphene involves including the presence of two bands and twodegeneracy valleys, (points K and K in the reciprocal space).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###A study of the magnetotransport properties of the graphene (I. Monolayer)|M. A. Hidalgo###
(1493289, 1493289)
 Now, the study in this framework of bothphenomena in graphene involves including the presence of two bands and twodegeneracy valleys, (points K and K in the reciprocal space).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###A study of the magnetotransport properties of the graphene (I. Monolayer)|M. A. Hidalgo###
(1493392, 1493392)
 In the model the observedHall plateaux series in the monolayer graphene, determined by the expression2(2n<missing VAR>1), arises in a natural way as a consequence of the particularquantization of the energy spectrum of graphene.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi
###Evidence of topological two-dimensional metallic surface states in thin bismuth nanoribbons|Wei Ning,Fengyu Kong,Chuanying Xi,David Graf,Haifeng Du,Yuyan Han,Jiyong Yang,Kun Yang,Mingliang Tian,Yuheng Zhang###
(1493664, 1493664)
 The focus of the issues is whether these quantum properties have aconventional bulk nature or just the surface effect due to the significantspin-orbital interaction and in relation to the Bi-based topologicalinsulators.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 31, 'T', 1],[187.0, 3, 'D', 4]

In
###Evidence of topological two-dimensional metallic surface states in thin bismuth nanoribbons|Wei Ning,Fengyu Kong,Chuanying Xi,David Graf,Haifeng Du,Yuyan Han,Jiyong Yang,Kun Yang,Mingliang Tian,Yuheng Zhang###
(1493725, 1493725)
 In thin nanoribbons with thickness of 40 nm, atwo-fold rational symmetry of the low field AMR spectra and two sets of1/2-shifted (i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 31, 'T', 1],[126.0, 3, 'D', 2]

H
###Evidence of topological two-dimensional metallic surface states in thin bismuth nanoribbons|Wei Ning,Fengyu Kong,Chuanying Xi,David Graf,Haifeng Du,Yuyan Han,Jiyong Yang,Kun Yang,Mingliang Tian,Yuheng Zhang###
(1493802, 1493802)
 gamma1/2) Shubnikov-de Haas (SdH) quantum oscillationswith exact two- dimensional (2D) character were obtained.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 31, 'T', 2],[49.0, 3, 'D', 1]

H
###Evidence of topological two-dimensional metallic surface states in thin bismuth nanoribbons|Wei Ning,Fengyu Kong,Chuanying Xi,David Graf,Haifeng Du,Yuyan Han,Jiyong Yang,Kun Yang,Mingliang Tian,Yuheng Zhang###
(1493858, 1493858)
 However, when thethickness of the ribbon increases, a 3D bulk-like SdH oscillations withgamma0 and a four-fold rotational symmetry of the AMR spectra appear.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 31, 'T', 3],[7.0, 3, 'D', 0]

Bi
###Evidence of topological two-dimensional metallic surface states in thin bismuth nanoribbons|Wei Ning,Fengyu Kong,Chuanying Xi,David Graf,Haifeng Du,Yuyan Han,Jiyong Yang,Kun Yang,Mingliang Tian,Yuheng Zhang###
(1493967, 1493967)
 Ourobservations provide a promising pathway to understand the quantum phenomena inBi arising from the surface states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[245.0, 31, 'T', 5],[116.0, 3, 'D', 2]

Fe1
###Multiband Effect and Possible Dirac Fermions in Fe$_{1+y}$Te$_{0.6}$Se$_{0.4}$|Yue Sun,Toshihiro Taen,Tatsuhiro Yamada,Sunseng Pyon,Terukazu Nishizaki,Zhixiang Shi###
(1494002, 1494003)
Multiband Effect and Possible Dirac Fermions in Fe1y<missing VAR>Te0.6Se0.4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 17, '%', 3],[143.0, 16, 'K', 3],[146.0, 14, 'T', 3],[300.0, 2, 'T', 8],[303.0, 16, 'K', 8],[316.0, 14, 'T', 8]

Te0.6Se0.4
###Multiband Effect and Possible Dirac Fermions in Fe$_{1+y}$Te$_{0.6}$Se$_{0.4}$|Yue Sun,Toshihiro Taen,Tatsuhiro Yamada,Sunseng Pyon,Terukazu Nishizaki,Zhixiang Shi###
(1494005, 1494008)
Multiband Effect and Possible Dirac Fermions in Fe1y<missing VAR>Te0.6Se0.4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 17, '%', 3],[138.0, 16, 'K', 3],[141.0, 14, 'T', 3],[295.0, 2, 'T', 8],[298.0, 16, 'K', 8],[311.0, 14, 'T', 8]

Fe1
###Multiband Effect and Possible Dirac Fermions in Fe$_{1+y}$Te$_{0.6}$Se$_{0.4}$|Yue Sun,Toshihiro Taen,Tatsuhiro Yamada,Sunseng Pyon,Terukazu Nishizaki,Zhixiang Shi###
(1494023, 1494024)
 We investigated the transport properties of Fe1y<missing VAR>Te0.6Se0.4single crystals with different amounts of excess Fe prepared by O2annealing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 17, '%', 2],[122.0, 16, 'K', 2],[125.0, 14, 'T', 2],[279.0, 2, 'T', 7],[282.0, 16, 'K', 7],[295.0, 14, 'T', 7]

Te0.6Se0.4
###Multiband Effect and Possible Dirac Fermions in Fe$_{1+y}$Te$_{0.6}$Se$_{0.4}$|Yue Sun,Toshihiro Taen,Tatsuhiro Yamada,Sunseng Pyon,Terukazu Nishizaki,Zhixiang Shi###
(1494026, 1494029)
 We investigated the transport properties of Fe1y<missing VAR>Te0.6Se0.4single crystals with different amounts of excess Fe prepared by O2annealing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 17, '%', 2],[117.0, 16, 'K', 2],[120.0, 14, 'T', 2],[274.0, 2, 'T', 7],[277.0, 16, 'K', 7],[290.0, 14, 'T', 7]

Fe
###Multiband Effect and Possible Dirac Fermions in Fe$_{1+y}$Te$_{0.6}$Se$_{0.4}$|Yue Sun,Toshihiro Taen,Tatsuhiro Yamada,Sunseng Pyon,Terukazu Nishizaki,Zhixiang Shi###
(1494046, 1494046)
 We investigated the transport properties of Fe1y<missing VAR>Te0.6Se0.4single crystals with different amounts of excess Fe prepared by O2annealing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 17, '%', 2],[100.0, 16, 'K', 2],[103.0, 14, 'T', 2],[257.0, 2, 'T', 7],[260.0, 16, 'K', 7],[273.0, 14, 'T', 7]

O2
###Multiband Effect and Possible Dirac Fermions in Fe$_{1+y}$Te$_{0.6}$Se$_{0.4}$|Yue Sun,Toshihiro Taen,Tatsuhiro Yamada,Sunseng Pyon,Terukazu Nishizaki,Zhixiang Shi###
(1494052, 1494053)
 We investigated the transport properties of Fe1y<missing VAR>Te0.6Se0.4single crystals with different amounts of excess Fe prepared by O2annealing.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 17, '%', 2],[93.0, 16, 'K', 2],[96.0, 14, 'T', 2],[250.0, 2, 'T', 7],[253.0, 16, 'K', 7],[266.0, 14, 'T', 7]

O2
###Multiband Effect and Possible Dirac Fermions in Fe$_{1+y}$Te$_{0.6}$Se$_{0.4}$|Yue Sun,Toshihiro Taen,Tatsuhiro Yamada,Sunseng Pyon,Terukazu Nishizaki,Zhixiang Shi###
(1494061, 1494062)
 The O2 annealing remarkably improves transport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 17, '%', 1],[84.0, 16, 'K', 1],[87.0, 14, 'T', 1],[241.0, 2, 'T', 6],[244.0, 16, 'K', 6],[257.0, 14, 'T', 6]

In
###Multiband Effect and Possible Dirac Fermions in Fe$_{1+y}$Te$_{0.6}$Se$_{0.4}$|Yue Sun,Toshihiro Taen,Tatsuhiro Yamada,Sunseng Pyon,Terukazu Nishizaki,Zhixiang Shi###
(1494075, 1494075)
 Inparticular, a strongly nonlinear Hall resistivity was observed only in thefully-annealed crystal, and the magnetoresistance (MR) is drastically enhancedafter annealing, reaching a value larger than 17% at 16 K and 14 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 17, '%', 0],[71.0, 16, 'K', 0],[74.0, 14, 'T', 0],[228.0, 2, 'T', 5],[231.0, 16, 'K', 5],[244.0, 14, 'T', 5]

Fe1
###Multiband Effect and Possible Dirac Fermions in Fe$_{1+y}$Te$_{0.6}$Se$_{0.4}$|Yue Sun,Toshihiro Taen,Tatsuhiro Yamada,Sunseng Pyon,Terukazu Nishizaki,Zhixiang Shi###
(1494184, 1494185)
 The obviouschange of transport properties after the annealing indicates that the bandstructure of Fe1y<missing VAR>Te0.6Se0.4 is affected by the excess Fe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 17, '%', 1],[38.0, 16, 'K', 1],[35.0, 14, 'T', 1],[118.0, 2, 'T', 4],[121.0, 16, 'K', 4],[134.0, 14, 'T', 4]

Te0.6Se0.4
###Multiband Effect and Possible Dirac Fermions in Fe$_{1+y}$Te$_{0.6}$Se$_{0.4}$|Yue Sun,Toshihiro Taen,Tatsuhiro Yamada,Sunseng Pyon,Terukazu Nishizaki,Zhixiang Shi###
(1494187, 1494190)
 The obviouschange of transport properties after the annealing indicates that the bandstructure of Fe1y<missing VAR>Te0.6Se0.4 is affected by the excess Fe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 17, '%', 1],[41.0, 16, 'K', 1],[38.0, 14, 'T', 1],[113.0, 2, 'T', 4],[116.0, 16, 'K', 4],[129.0, 14, 'T', 4]

Fe
###Multiband Effect and Possible Dirac Fermions in Fe$_{1+y}$Te$_{0.6}$Se$_{0.4}$|Yue Sun,Toshihiro Taen,Tatsuhiro Yamada,Sunseng Pyon,Terukazu Nishizaki,Zhixiang Shi###
(1494202, 1494202)
 The obviouschange of transport properties after the annealing indicates that the bandstructure of Fe1y<missing VAR>Te0.6Se0.4 is affected by the excess Fe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 17, '%', 1],[56.0, 16, 'K', 1],[53.0, 14, 'T', 1],[101.0, 2, 'T', 4],[104.0, 16, 'K', 4],[117.0, 14, 'T', 4]

Fe1
###Multiband Effect and Possible Dirac Fermions in Fe$_{1+y}$Te$_{0.6}$Se$_{0.4}$|Yue Sun,Toshihiro Taen,Tatsuhiro Yamada,Sunseng Pyon,Terukazu Nishizaki,Zhixiang Shi###
(1494251, 1494252)
 Thenonlinear Hall resistivity and violation of (modified) Kohlers<missing VAR> scaling of thelarge MR prove the multiband effects in the Fe1y<missing VAR>Te0.6Se0.4single crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 17, '%', 2],[105.0, 16, 'K', 2],[102.0, 14, 'T', 2],[51.0, 2, 'T', 3],[54.0, 16, 'K', 3],[67.0, 14, 'T', 3]

Te0.6Se0.4
###Multiband Effect and Possible Dirac Fermions in Fe$_{1+y}$Te$_{0.6}$Se$_{0.4}$|Yue Sun,Toshihiro Taen,Tatsuhiro Yamada,Sunseng Pyon,Terukazu Nishizaki,Zhixiang Shi###
(1494254, 1494257)
 Thenonlinear Hall resistivity and violation of (modified) Kohlers<missing VAR> scaling of thelarge MR prove the multiband effects in the Fe1y<missing VAR>Te0.6Se0.4single crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 17, '%', 2],[108.0, 16, 'K', 2],[105.0, 14, 'T', 2],[46.0, 2, 'T', 3],[49.0, 16, 'K', 3],[62.0, 14, 'T', 3]

Au
###Long-ranged magnetic proximity effects in noble metal-doped cobalt probed with spin- dependent tunnelling|Mihai S. Gabureac,Donald A. Mac Laren,Hervé Courtois,Christopher M. Marrows###
(1494432, 1494432)
 We inserted non-magnetic layers of Au and Cu into sputtered AlOx-basedmagnetic tunnel junctions and Meservey-Tedrow junctions in order to study theireffect on tunnelling magnetoresistance (TMR) and spin polarization (T<missing VAR>SP).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[351.0, 0.1, 'nm', 5]

Cu
###Long-ranged magnetic proximity effects in noble metal-doped cobalt probed with spin- dependent tunnelling|Mihai S. Gabureac,Donald A. Mac Laren,Hervé Courtois,Christopher M. Marrows###
(1494436, 1494436)
 We inserted non-magnetic layers of Au and Cu into sputtered AlOx-basedmagnetic tunnel junctions and Meservey-Tedrow junctions in order to study theireffect on tunnelling magnetoresistance (TMR) and spin polarization (T<missing VAR>SP).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[347.0, 0.1, 'nm', 5]

Al
###Long-ranged magnetic proximity effects in noble metal-doped cobalt probed with spin- dependent tunnelling|Mihai S. Gabureac,Donald A. Mac Laren,Hervé Courtois,Christopher M. Marrows###
(1494442, 1494442)
 We inserted non-magnetic layers of Au and Cu into sputtered AlOx-basedmagnetic tunnel junctions and Meservey-Tedrow junctions in order to study theireffect on tunnelling magnetoresistance (TMR) and spin polarization (T<missing VAR>SP).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[341.0, 0.1, 'nm', 5]

P
###Long-ranged magnetic proximity effects in noble metal-doped cobalt probed with spin- dependent tunnelling|Mihai S. Gabureac,Donald A. Mac Laren,Hervé Courtois,Christopher M. Marrows###
(1494496, 1494496)
 We inserted non-magnetic layers of Au and Cu into sputtered AlOx-basedmagnetic tunnel junctions and Meservey-Tedrow junctions in order to study theireffect on tunnelling magnetoresistance (TMR) and spin polarization (T<missing VAR>SP).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[287.0, 0.1, 'nm', 5]

Au
###Long-ranged magnetic proximity effects in noble metal-doped cobalt probed with spin- dependent tunnelling|Mihai S. Gabureac,Donald A. Mac Laren,Hervé Courtois,Christopher M. Marrows###
(1494505, 1494505)
 Wheneither Au or Cu are inserted into a Co/AlOx interface, we find that TMR and T<missing VAR>SPremain finite and measurable for thicknesses up to several nanometres.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[278.0, 0.1, 'nm', 4]

Cu
###Long-ranged magnetic proximity effects in noble metal-doped cobalt probed with spin- dependent tunnelling|Mihai S. Gabureac,Donald A. Mac Laren,Hervé Courtois,Christopher M. Marrows###
(1494509, 1494509)
 Wheneither Au or Cu are inserted into a Co/AlOx interface, we find that TMR and T<missing VAR>SPremain finite and measurable for thicknesses up to several nanometres.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[274.0, 0.1, 'nm', 4]

Co/Al
###Long-ranged magnetic proximity effects in noble metal-doped cobalt probed with spin- dependent tunnelling|Mihai S. Gabureac,Donald A. Mac Laren,Hervé Courtois,Christopher M. Marrows###
(1494519, 1494521)
 Wheneither Au or Cu are inserted into a Co/AlOx interface, we find that TMR and T<missing VAR>SPremain finite and measurable for thicknesses up to several nanometres.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[262.0, 0.1, 'nm', 4]

SP
###Long-ranged magnetic proximity effects in noble metal-doped cobalt probed with spin- dependent tunnelling|Mihai S. Gabureac,Donald A. Mac Laren,Hervé Courtois,Christopher M. Marrows###
(1494540, 1494541)
 Wheneither Au or Cu are inserted into a Co/AlOx interface, we find that TMR and T<missing VAR>SPremain finite and measurable for thicknesses up to several nanometres.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[242.0, 0.1, 'nm', 4]

Cu
###Long-ranged magnetic proximity effects in noble metal-doped cobalt probed with spin- dependent tunnelling|Mihai S. Gabureac,Donald A. Mac Laren,Hervé Courtois,Christopher M. Marrows###
(1494582, 1494582)
High-resolution transmission electron microscopy shows that the Cu and Auinterface layers are fully continuous when their thickness exceeds 3 nm,implying that spin-polarized carriers penetrate the interface noble metal todis- tances exceeding this value.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[201.0, 0.1, 'nm', 3]

Au
###Long-ranged magnetic proximity effects in noble metal-doped cobalt probed with spin- dependent tunnelling|Mihai S. Gabureac,Donald A. Mac Laren,Hervé Courtois,Christopher M. Marrows###
(1494586, 1494586)
High-resolution transmission electron microscopy shows that the Cu and Auinterface layers are fully continuous when their thickness exceeds 3 nm,implying that spin-polarized carriers penetrate the interface noble metal todis- tances exceeding this value.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[197.0, 0.1, 'nm', 3]

Cu
###Long-ranged magnetic proximity effects in noble metal-doped cobalt probed with spin- dependent tunnelling|Mihai S. Gabureac,Donald A. Mac Laren,Hervé Courtois,Christopher M. Marrows###
(1494787, 1494787)
 Whena 0.1 nm thick Cu or Au layer is inserted within the Co, we find that thesuppression of TMR and T<missing VAR>SP is restored on a length scale of <1 nm, indicatingthat this is a sufficient quantity of Co to form a fully spin-polarized bandstructure at the interface with the tunnel barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 0.1, 'nm', 0]

Au
###Long-ranged magnetic proximity effects in noble metal-doped cobalt probed with spin- dependent tunnelling|Mihai S. Gabureac,Donald A. Mac Laren,Hervé Courtois,Christopher M. Marrows###
(1494791, 1494791)
 Whena 0.1 nm thick Cu or Au layer is inserted within the Co, we find that thesuppression of TMR and T<missing VAR>SP is restored on a length scale of <1 nm, indicatingthat this is a sufficient quantity of Co to form a fully spin-polarized bandstructure at the interface with the tunnel barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 0.1, 'nm', 0]

Co
###Long-ranged magnetic proximity effects in noble metal-doped cobalt probed with spin- dependent tunnelling|Mihai S. Gabureac,Donald A. Mac Laren,Hervé Courtois,Christopher M. Marrows###
(1494803, 1494803)
 Whena 0.1 nm thick Cu or Au layer is inserted within the Co, we find that thesuppression of TMR and T<missing VAR>SP is restored on a length scale of <1 nm, indicatingthat this is a sufficient quantity of Co to form a fully spin-polarized bandstructure at the interface with the tunnel barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 0.1, 'nm', 0]

SP
###Long-ranged magnetic proximity effects in noble metal-doped cobalt probed with spin- dependent tunnelling|Mihai S. Gabureac,Donald A. Mac Laren,Hervé Courtois,Christopher M. Marrows###
(1494826, 1494827)
 Whena 0.1 nm thick Cu or Au layer is inserted within the Co, we find that thesuppression of TMR and T<missing VAR>SP is restored on a length scale of <1 nm, indicatingthat this is a sufficient quantity of Co to form a fully spin-polarized bandstructure at the interface with the tunnel barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 0.1, 'nm', 0]

Co
###Long-ranged magnetic proximity effects in noble metal-doped cobalt probed with spin- dependent tunnelling|Mihai S. Gabureac,Donald A. Mac Laren,Hervé Courtois,Christopher M. Marrows###
(1494866, 1494866)
 Whena 0.1 nm thick Cu or Au layer is inserted within the Co, we find that thesuppression of TMR and T<missing VAR>SP is restored on a length scale of <1 nm, indicatingthat this is a sufficient quantity of Co to form a fully spin-polarized bandstructure at the interface with the tunnel barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 0.1, 'nm', 0]

Eu2Ir2O7
###Odd-parity magnetoresistance in pyrochlore iridate thin films with broken time-reversal symmetry|T. C. Fujita,Y. Kozuka,M. Uchida,A. Tsukazaki,T. Arima,M. Kawasaki###
(1495092, 1495097)
 Here, we report on the fabricationand magnetotransport of Eu2Ir2O7 single crystalline thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6363636363636364,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.6Ca0.4MnO3
###Magnetic and magnetocaloric properties of La$_{0.6}$Ca$_{0.4}$MnO$_{3}$ tunable by particle size and dimensionality|Vivian M. Andrade,Richard J. Caraballo Vivas,Sandra S. Pedro,Julio César G. Tedesco,André L. Rossi,Adelino A. Coelho,Daniel L. Rocco,Mario S. Reis###
(1495319, 1495325)
Magnetic and magnetocaloric properties of La0.6Ca0.4MnO3 tunable by particle size and dimensionality.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.08,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.12,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[272.0, 223, 'nm', 6],[397.0, 223, 'nm', 8]

In
###Magnetic and magnetocaloric properties of La$_{0.6}$Ca$_{0.4}$MnO$_{3}$ tunable by particle size and dimensionality|Vivian M. Andrade,Richard J. Caraballo Vivas,Sandra S. Pedro,Julio César G. Tedesco,André L. Rossi,Adelino A. Coelho,Daniel L. Rocco,Mario S. Reis###
(1495385, 1495385)
 In recent years, some studies point to the effect ofparticle size and dimensionality of these compounds in their magnetic features.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[212.0, 223, 'nm', 4],[337.0, 223, 'nm', 6]

LaCaMnO
###Magnetic and magnetocaloric properties of La$_{0.6}$Ca$_{0.4}$MnO$_{3}$ tunable by particle size and dimensionality|Vivian M. Andrade,Richard J. Caraballo Vivas,Sandra S. Pedro,Julio César G. Tedesco,André L. Rossi,Adelino A. Coelho,Daniel L. Rocco,Mario S. Reis###
(1495434, 1495437)
Particularly, LaCaMnO material research is well explored concerning the bulkmaterial.
Featurization terminated normally.
0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 223, 'nm', 3],[285.0, 223, 'nm', 5]

La0.6Ca0.4MnO3
###Magnetic and magnetocaloric properties of La$_{0.6}$Ca$_{0.4}$MnO$_{3}$ tunable by particle size and dimensionality|Vivian M. Andrade,Richard J. Caraballo Vivas,Sandra S. Pedro,Julio César G. Tedesco,André L. Rossi,Adelino A. Coelho,Daniel L. Rocco,Mario S. Reis###
(1495486, 1495492)
 To overcome the lack of the information we successfully producedadvanced nanostructures of La0.6Ca0.4MnO3 manganites, namelynanotubes and nanoparticles by using a sol-gel modified method, to determinethe size particle effect on the magnetism.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.08,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.12,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 223, 'nm', 2],[230.0, 223, 'nm', 4]

P
###Magnetic and magnetocaloric properties of La$_{0.6}$Ca$_{0.4}$MnO$_{3}$ tunable by particle size and dimensionality|Vivian M. Andrade,Richard J. Caraballo Vivas,Sandra S. Pedro,Julio César G. Tedesco,André L. Rossi,Adelino A. Coelho,Daniel L. Rocco,Mario S. Reis###
(1495688, 1495688)
 We report the relative cooling power (R<missing VAR>CP) of these samples;it was found that the best R<missing VAR>CP was observed for the 223 nm particle (508 J<missing VAR>/Kg).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 223, 'nm', 2],[34.0, 223, 'nm', 0]

CP
###Magnetic and magnetocaloric properties of La$_{0.6}$Ca$_{0.4}$MnO$_{3}$ tunable by particle size and dimensionality|Vivian M. Andrade,Richard J. Caraballo Vivas,Sandra S. Pedro,Julio César G. Tedesco,André L. Rossi,Adelino A. Coelho,Daniel L. Rocco,Mario S. Reis###
(1495712, 1495713)
 We report the relative cooling power (R<missing VAR>CP) of these samples;it was found that the best R<missing VAR>CP was observed for the 223 nm particle (508 J<missing VAR>/Kg).
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 223, 'nm', 2],[9.0, 223, 'nm', 0]

MoTe2
###Superconductivity in Weyl Semimetal Candidate MoTe2|Yanpeng Qi,Pavel G. Naumov,Mazhar N. Ali,Catherine R. Rajamathi,Oleg Barkalov,Michael Hanfland,Shu-Chun Wu,Chandra Shekhar,Yan Sun,Vicky Süß,Marcus Schmidt,Eckhard Pippel,Peter Werner,Reinald Hillebrand,Tobias Förster,Erik Kampertt,Walter Schnelle,Stuart Parkin,R. J. Cava,Claudia Felser,Binghai Yan,Sergiy A. Medvedev###
(1495797, 1495799)
Superconductivity in Weyl Semimetal Candidate MoTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[320.0, 0.1, 'K', 6],[340.0, 0.4, 'GPa', 7],[368.0, 8.2, 'K', 7],[375.0, 11.7, 'GPa', 7]

In
###Superconductivity in Weyl Semimetal Candidate MoTe2|Yanpeng Qi,Pavel G. Naumov,Mazhar N. Ali,Catherine R. Rajamathi,Oleg Barkalov,Michael Hanfland,Shu-Chun Wu,Chandra Shekhar,Yan Sun,Vicky Süß,Marcus Schmidt,Eckhard Pippel,Peter Werner,Reinald Hillebrand,Tobias Förster,Erik Kampertt,Walter Schnelle,Stuart Parkin,R. J. Cava,Claudia Felser,Binghai Yan,Sergiy A. Medvedev###
(1495802, 1495802)
 In recent years, layered transition-metal dichalcogenides (TMDs) haveattracted considerable attention because of their rich physics; for example,these materials exhibit superconductivity, charge density waves, and the valleyHall effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[317.0, 0.1, 'K', 5],[337.0, 0.4, 'GPa', 6],[365.0, 8.2, 'K', 6],[372.0, 11.7, 'GPa', 6]

Ds
###Superconductivity in Weyl Semimetal Candidate MoTe2|Yanpeng Qi,Pavel G. Naumov,Mazhar N. Ali,Catherine R. Rajamathi,Oleg Barkalov,Michael Hanfland,Shu-Chun Wu,Chandra Shekhar,Yan Sun,Vicky Süß,Marcus Schmidt,Eckhard Pippel,Peter Werner,Reinald Hillebrand,Tobias Förster,Erik Kampertt,Walter Schnelle,Stuart Parkin,R. J. Cava,Claudia Felser,Binghai Yan,Sergiy A. Medvedev###
(1495820, 1495820)
 In recent years, layered transition-metal dichalcogenides (TMDs) haveattracted considerable attention because of their rich physics; for example,these materials exhibit superconductivity, charge density waves, and the valleyHall effect.
EXCEPTION 3: IndexError for Ds
As
[299.0, 0.1, 'K', 5],[319.0, 0.4, 'GPa', 6],[347.0, 8.2, 'K', 6],[354.0, 11.7, 'GPa', 6]

MnTe
###Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe|D. Kriegner,K. Vyborny,K. Olejnik,H. Reichlova,V. Novak,X. Marti,J. Gazquez,V. Saidl,P. Nemec,V. V. Volobuev,G. Springholz,V. Holy,T. Jungwirth###
(1496285, 1496286)
Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe|D. Kriegner,K. Vyborny,K. Olejnik,H. Reichlova,V. Novak,X. Marti,J. Gazquez,V. Saidl,P. Nemec,V. V. Volobuev,G. Springholz,V. Holy,T. Jungwirth###
(1496398, 1496398)
 In the present work wedemonstrate a multiple-stable memory device in epitaxial manganese telluride(MnTe) which is an antiferromagnetic counterpart of common II-VIsemiconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(MnTe)
###Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe|D. Kriegner,K. Vyborny,K. Olejnik,H. Reichlova,V. Novak,X. Marti,J. Gazquez,V. Saidl,P. Nemec,V. V. Volobuev,G. Springholz,V. Holy,T. Jungwirth###
(1496430, 1496433)
 In the present work wedemonstrate a multiple-stable memory device in epitaxial manganese telluride(MnTe) which is an antiferromagnetic counterpart of common II-VIsemiconductors.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe|D. Kriegner,K. Vyborny,K. Olejnik,H. Reichlova,V. Novak,X. Marti,J. Gazquez,V. Saidl,P. Nemec,V. V. Volobuev,G. Springholz,V. Holy,T. Jungwirth###
(1496449, 1496450)
 In the present work wedemonstrate a multiple-stable memory device in epitaxial manganese telluride(MnTe) which is an antiferromagnetic counterpart of common II-VIsemiconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

VI
###Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe|D. Kriegner,K. Vyborny,K. Olejnik,H. Reichlova,V. Novak,X. Marti,J. Gazquez,V. Saidl,P. Nemec,V. V. Volobuev,G. Springholz,V. Holy,T. Jungwirth###
(1496452, 1496453)
 In the present work wedemonstrate a multiple-stable memory device in epitaxial manganese telluride(MnTe) which is an antiferromagnetic counterpart of common II-VIsemiconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnTe
###Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe|D. Kriegner,K. Vyborny,K. Olejnik,H. Reichlova,V. Novak,X. Marti,J. Gazquez,V. Saidl,P. Nemec,V. V. Volobuev,G. Springholz,V. Holy,T. Jungwirth###
(1496467, 1496468)
 Favorable micromagnetic characteristics of MnTe allow us todemonstrate a smoothly varying antiferromagnetic anisotropic magnetoresistance(AMR) with a harmonic angular dependence on the applied magnetic field,analogous to ferromagnets.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe|D. Kriegner,K. Vyborny,K. Olejnik,H. Reichlova,V. Novak,X. Marti,J. Gazquez,V. Saidl,P. Nemec,V. V. Volobuev,G. Springholz,V. Holy,T. Jungwirth###
(1496708, 1496708)
 We ascribe the multiple-stability in our antiferromagneticmemory to different distributions of domains with the Neel vector alignedalong one of the three c<missing VAR>-plane magnetic easy axes in the hexagonal MnTe film.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnTe
###Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe|D. Kriegner,K. Vyborny,K. Olejnik,H. Reichlova,V. Novak,X. Marti,J. Gazquez,V. Saidl,P. Nemec,V. V. Volobuev,G. Springholz,V. Holy,T. Jungwirth###
(1496742, 1496743)
 We ascribe the multiple-stability in our antiferromagneticmemory to different distributions of domains with the Neel vector alignedalong one of the three c<missing VAR>-plane magnetic easy axes in the hexagonal MnTe film.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe|D. Kriegner,K. Vyborny,K. Olejnik,H. Reichlova,V. Novak,X. Marti,J. Gazquez,V. Saidl,P. Nemec,V. V. Volobuev,G. Springholz,V. Holy,T. Jungwirth###
(1496801, 1496801)
The domain redistribution is controlled during the heat-assisted recording bythe strength and angle of the writing field and freezes when sufficiently belowthe Neel temperature.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Zr2Te2P
###A strong-topological-metal material with multiple Dirac cones|Huiwen Ji,I Pletikosić,Q. D. Gibson,Girija Sahasrabudhe,T. Valla,R. J. Cava###
(1496853, 1496857)
 We report a new, cleavable, strong-topological-metal, Zr2Te2P, which has thesame tetradymite-type crystal structure as the topological insulator Bi2Te2Se.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 0.2, 'and', 1],[69.0, 0.7, 'eV', 1],[173.0, 2, 'eV', 2]

Bi2Te2Se
###A strong-topological-metal material with multiple Dirac cones|Huiwen Ji,I Pletikosić,Q. D. Gibson,Girija Sahasrabudhe,T. Valla,R. J. Cava###
(1496885, 1496889)
 We report a new, cleavable, strong-topological-metal, Zr2Te2P, which has thesame tetradymite-type crystal structure as the topological insulator Bi2Te2Se.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 0.2, 'and', 1],[37.0, 0.7, 'eV', 1],[141.0, 2, 'eV', 2]

Zr2Te2P
###A strong-topological-metal material with multiple Dirac cones|Huiwen Ji,I Pletikosić,Q. D. Gibson,Girija Sahasrabudhe,T. Valla,R. J. Cava###
(1496907, 1496911)
Instead of being a semiconductor, however, Zr2Te2P is metallic with a pseudogapbetween 0.2 and 0.7 eV above the fermi energy (E<missing VAR>F).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 0.2, 'and', 0],[15.0, 0.7, 'eV', 0],[119.0, 2, 'eV', 1]

F
###A strong-topological-metal material with multiple Dirac cones|Huiwen Ji,I Pletikosić,Q. D. Gibson,Girija Sahasrabudhe,T. Valla,R. J. Cava###
(1496938, 1496938)
Instead of being a semiconductor, however, Zr2Te2P is metallic with a pseudogapbetween 0.2 and 0.7 eV above the fermi energy (E<missing VAR>F).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 0.2, 'and', 0],[12.0, 0.7, 'eV', 0],[92.0, 2, 'eV', 1]

S
###A strong-topological-metal material with multiple Dirac cones|Huiwen Ji,I Pletikosić,Q. D. Gibson,Girija Sahasrabudhe,T. Valla,R. J. Cava###
(1496988, 1496988)
 Inside this pseudogap, twoDirac dispersions are predicted one is a surface-originated Dirac coneprotected by time-reversal symmetry (TRS), while the other is a bulk-originatedand slightly gapped Dirac cone with a largely linear dispersion over a 2 eVenergy range.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 0.2, 'and', 1],[62.0, 0.7, 'eV', 1],[42.0, 2, 'eV', 0]

S
###A strong-topological-metal material with multiple Dirac cones|Huiwen Ji,I Pletikosić,Q. D. Gibson,Girija Sahasrabudhe,T. Valla,R. J. Cava###
(1497046, 1497046)
 A third surface TRS-protected Dirac cone is predicted, andobserved using ARPES, making Zr2Te2P the first system to realize TRS-protectedDirac cones at M<missing VAR> points.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 0.2, 'and', 2],[120.0, 0.7, 'eV', 2],[16.0, 2, 'eV', 1]

S
###A strong-topological-metal material with multiple Dirac cones|Huiwen Ji,I Pletikosić,Q. D. Gibson,Girija Sahasrabudhe,T. Valla,R. J. Cava###
(1497070, 1497070)
 A third surface TRS-protected Dirac cone is predicted, andobserved using ARPES, making Zr2Te2P the first system to realize TRS-protectedDirac cones at M<missing VAR> points.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 0.2, 'and', 2],[144.0, 0.7, 'eV', 2],[40.0, 2, 'eV', 1]

Zr2Te2P
###A strong-topological-metal material with multiple Dirac cones|Huiwen Ji,I Pletikosić,Q. D. Gibson,Girija Sahasrabudhe,T. Valla,R. J. Cava###
(1497075, 1497079)
 A third surface TRS-protected Dirac cone is predicted, andobserved using ARPES, making Zr2Te2P the first system to realize TRS-protectedDirac cones at M<missing VAR> points.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 0.2, 'and', 2],[149.0, 0.7, 'eV', 2],[45.0, 2, 'eV', 1]

S
###A strong-topological-metal material with multiple Dirac cones|Huiwen Ji,I Pletikosić,Q. D. Gibson,Girija Sahasrabudhe,T. Valla,R. J. Cava###
(1497093, 1497093)
 A third surface TRS-protected Dirac cone is predicted, andobserved using ARPES, making Zr2Te2P the first system to realize TRS-protectedDirac cones at M<missing VAR> points.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[168.0, 0.2, 'and', 2],[167.0, 0.7, 'eV', 2],[63.0, 2, 'eV', 1]

BiO2
###A strong-topological-metal material with multiple Dirac cones|Huiwen Ji,I Pletikosić,Q. D. Gibson,Girija Sahasrabudhe,T. Valla,R. J. Cava###
(1497144, 1497146)
 The high anisotropy of this Dirac cone is similar tothe one in the hypothetical Dirac semimetal BiO2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[219.0, 0.2, 'and', 3],[218.0, 0.7, 'eV', 3],[114.0, 2, 'eV', 2]

F
###A strong-topological-metal material with multiple Dirac cones|Huiwen Ji,I Pletikosić,Q. D. Gibson,Girija Sahasrabudhe,T. Valla,R. J. Cava###
(1497158, 1497158)
 We propose that if E<missing VAR>F can betuned into the pseudogap where the Dirac dispersions exist, it may be possibleto observe ultrahigh carrier mobility and large magnetoresistance in thismaterial.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[233.0, 0.2, 'and', 4],[232.0, 0.7, 'eV', 4],[128.0, 2, 'eV', 3]

WTe2
###Origin of the superconductivity of WTe2 under pressure|Pengchao Lu,Joon-Seok Kim,Jing Yang,Hao Gao,Juefei Wu,Dexi Shao,Bin Li,Dawei Zhou,Jian Sun,Deji Akinwande,Jung-Fu Lin,Dingyu Xing###
(1497235, 1497237)
Origin of the superconductivity of WTe2 under pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(WTe2)
###Origin of the superconductivity of WTe2 under pressure|Pengchao Lu,Joon-Seok Kim,Jing Yang,Hao Gao,Juefei Wu,Dexi Shao,Bin Li,Dawei Zhou,Jian Sun,Deji Akinwande,Jung-Fu Lin,Dingyu Xing###
(1497248, 1497252)
 Tungsten ditelluride (WTe2) has attracted significant attention due to itsinteresting electronic properties, such as the unsaturated magnetoresistanceand superconductivity.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ds
###Origin of the superconductivity of WTe2 under pressure|Pengchao Lu,Joon-Seok Kim,Jing Yang,Hao Gao,Juefei Wu,Dexi Shao,Bin Li,Dawei Zhou,Jian Sun,Deji Akinwande,Jung-Fu Lin,Dingyu Xing###
(1497341, 1497341)
 Recently, it has been proposed to be a new type of Weylsemimetal, which is distinguished from other transition metal dichalcogenides(TMDs) from a topological prospective.
EXCEPTION 3: IndexError for Ds
WTe2
Abstract does not contain any numbers.

In
###Current and field stimulated motion of domain wall in narrow permalloy stripe|L. S. Uspenskaya,S. V. Egorov###
(1497833, 1497833)
 In thesuperconducting layer, the current is dissipation less, which would bring largereduction of energy consumption.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ce
###Kondo effect in CeX$_{c}$ (X$_{c}$=S, Se, Te) studied by electrical resistivity under high pressure|Y. Hayashi,S. Takai,T. Matsumura,H. Tanida,M. Sera,K. Matsubayashi,Y. Uwatoko,A. Ochiai###
(1498084, 1498084)
Kondo effect in CeXc (XcS, Se, Te) studied by electrical resistivity under high pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 8, 'GPa', 1]

S
###Kondo effect in CeX$_{c}$ (X$_{c}$=S, Se, Te) studied by electrical resistivity under high pressure|Y. Hayashi,S. Takai,T. Matsumura,H. Tanida,M. Sera,K. Matsubayashi,Y. Uwatoko,A. Ochiai###
(1498091, 1498091)
Kondo effect in CeXc (XcS, Se, Te) studied by electrical resistivity under high pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 8, 'GPa', 1]

Se
###Kondo effect in CeX$_{c}$ (X$_{c}$=S, Se, Te) studied by electrical resistivity under high pressure|Y. Hayashi,S. Takai,T. Matsumura,H. Tanida,M. Sera,K. Matsubayashi,Y. Uwatoko,A. Ochiai###
(1498094, 1498094)
Kondo effect in CeXc (XcS, Se, Te) studied by electrical resistivity under high pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 8, 'GPa', 1]

Te
###Kondo effect in CeX$_{c}$ (X$_{c}$=S, Se, Te) studied by electrical resistivity under high pressure|Y. Hayashi,S. Takai,T. Matsumura,H. Tanida,M. Sera,K. Matsubayashi,Y. Uwatoko,A. Ochiai###
(1498097, 1498097)
Kondo effect in CeXc (XcS, Se, Te) studied by electrical resistivity under high pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 8, 'GPa', 1]

CeS
###Kondo effect in CeX$_{c}$ (X$_{c}$=S, Se, Te) studied by electrical resistivity under high pressure|Y. Hayashi,S. Takai,T. Matsumura,H. Tanida,M. Sera,K. Matsubayashi,Y. Uwatoko,A. Ochiai###
(1498134, 1498135)
 We have measured the electrical resistivity of cerium monochalcogenices, CeS,CeSe, and CeTe, under high pressures up to 8 GPa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 8, 'GPa', 0]

CeSe
###Kondo effect in CeX$_{c}$ (X$_{c}$=S, Se, Te) studied by electrical resistivity under high pressure|Y. Hayashi,S. Takai,T. Matsumura,H. Tanida,M. Sera,K. Matsubayashi,Y. Uwatoko,A. Ochiai###
(1498139, 1498140)
 We have measured the electrical resistivity of cerium monochalcogenices, CeS,CeSe, and CeTe, under high pressures up to 8 GPa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 8, 'GPa', 0]

CeTe
###Kondo effect in CeX$_{c}$ (X$_{c}$=S, Se, Te) studied by electrical resistivity under high pressure|Y. Hayashi,S. Takai,T. Matsumura,H. Tanida,M. Sera,K. Matsubayashi,Y. Uwatoko,A. Ochiai###
(1498145, 1498146)
 We have measured the electrical resistivity of cerium monochalcogenices, CeS,CeSe, and CeTe, under high pressures up to 8 GPa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 8, 'GPa', 0]

N
###Kondo effect in CeX$_{c}$ (X$_{c}$=S, Se, Te) studied by electrical resistivity under high pressure|Y. Hayashi,S. Takai,T. Matsumura,H. Tanida,M. Sera,K. Matsubayashi,Y. Uwatoko,A. Ochiai###
(1498177, 1498177)
 Pressure dependences of theantiferromagnetic ordering temperature T<missing VAR>N, crystal field splitting, andthe ln T<missing VAR> anomaly of the Kondo effect have been studied to cover the wholeregion from the magnetic ordering regime at low pressure to the Fermi liquidregime at high pressure.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 8, 'GPa', 1]

N
###Kondo effect in CeX$_{c}$ (X$_{c}$=S, Se, Te) studied by electrical resistivity under high pressure|Y. Hayashi,S. Takai,T. Matsumura,H. Tanida,M. Sera,K. Matsubayashi,Y. Uwatoko,A. Ochiai###
(1498258, 1498258)
 T<missing VAR>N initially increases with increasing pressure,and starts to decrease at high pressure as expected from the Doniachs<missing VAR> diagram.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 8, 'GPa', 2]

Ce
###Kondo effect in CeX$_{c}$ (X$_{c}$=S, Se, Te) studied by electrical resistivity under high pressure|Y. Hayashi,S. Takai,T. Matsumura,H. Tanida,M. Sera,K. Matsubayashi,Y. Uwatoko,A. Ochiai###
(1498354, 1498354)
 It is also characteristic inCeXc that the crystal field splitting rapidly decreases at a common rateof -12.2 K/G<missing VAR>Pa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[196.0, 8, 'GPa', 4]

K
###Kondo effect in CeX$_{c}$ (X$_{c}$=S, Se, Te) studied by electrical resistivity under high pressure|Y. Hayashi,S. Takai,T. Matsumura,H. Tanida,M. Sera,K. Matsubayashi,Y. Uwatoko,A. Ochiai###
(1498386, 1498386)
 It is also characteristic inCeXc that the crystal field splitting rapidly decreases at a common rateof -12.2 K/G<missing VAR>Pa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[228.0, 8, 'GPa', 4]

Pa
###Kondo effect in CeX$_{c}$ (X$_{c}$=S, Se, Te) studied by electrical resistivity under high pressure|Y. Hayashi,S. Takai,T. Matsumura,H. Tanida,M. Sera,K. Matsubayashi,Y. Uwatoko,A. Ochiai###
(1498389, 1498389)
 It is also characteristic inCeXc that the crystal field splitting rapidly decreases at a common rateof -12.2 K/G<missing VAR>Pa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0
[231.0, 8, 'GPa', 4]

N
###Kondo effect in CeX$_{c}$ (X$_{c}$=S, Se, Te) studied by electrical resistivity under high pressure|Y. Hayashi,S. Takai,T. Matsumura,H. Tanida,M. Sera,K. Matsubayashi,Y. Uwatoko,A. Ochiai###
(1498479, 1498479)
 It is shown that the pressuredependent degeneracy of the f<missing VAR> state is a key factor to understand thepressure dependence of T<missing VAR>N, Kondo effect, magnetoresistance, and the peakstructure in the temperature dependence of resistivity.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[321.0, 8, 'GPa', 6]

Eu2Ir2O7
###All-in-all-out magnetic domain size in pyrochlore iridate thin films as probed by local magnetotransport|T. C. Fujita,M. Uchida,Y. Kozuka,S. Ogawa,A. Tsukazaki,T. Arima,M. Kawasaki###
(1498680, 1498685)
 Here, we investigate the sizeof magnetic domains in Eu2Ir2O7 single crystalline thin films bymagnetoresistance (MR) using microscale Hall bars.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6363636363636364,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###All-in-all-out magnetic domain size in pyrochlore iridate thin films as probed by local magnetotransport|T. C. Fujita,M. Uchida,Y. Kozuka,S. Ogawa,A. Tsukazaki,T. Arima,M. Kawasaki###
(1498853, 1498853)
 In contrast, the wide distribution ofthe value of the linear MR is detected in 2 times 2 mum<missing VAR>2 channel,reflecting the detectable domain size depending on each cooling-cycle.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbAs2
###Resistivity plateau and extremely large magnetoresistance in NbAs2 and TaAs2|Yi-Yan Wang,Qiao-He Yu,Tian-Long Xia###
(1498992, 1498994)
Resistivity plateau and extremely large magnetoresistance in NbAs2 and TaAs2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[391.0, 105, '%', 7],[403.0, 105, '%', 7],[414.0, 2.5, 'K', 7],[416.0, 14, 'T', 7]

TaAs2
###Resistivity plateau and extremely large magnetoresistance in NbAs2 and TaAs2|Yi-Yan Wang,Qiao-He Yu,Tian-Long Xia###
(1498998, 1499000)
Resistivity plateau and extremely large magnetoresistance in NbAs2 and TaAs2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[385.0, 105, '%', 7],[397.0, 105, '%', 7],[408.0, 2.5, 'K', 7],[410.0, 14, 'T', 7]

In
###Resistivity plateau and extremely large magnetoresistance in NbAs2 and TaAs2|Yi-Yan Wang,Qiao-He Yu,Tian-Long Xia###
(1499003, 1499003)
 In topological insulators (T<missing VAR>Is), metallic surface conductance saturates theinsulating bulk resistance with de- creasing temperature, resulting inresistivity plateau at low temperatures as a transport signature originatingfrom metallic surface modes protected by time reversal symmetry (TRS).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[382.0, 105, '%', 6],[394.0, 105, '%', 6],[405.0, 2.5, 'K', 6],[407.0, 14, 'T', 6]

S
###Resistivity plateau and extremely large magnetoresistance in NbAs2 and TaAs2|Yi-Yan Wang,Qiao-He Yu,Tian-Long Xia###
(1499089, 1499089)
 In topological insulators (T<missing VAR>Is), metallic surface conductance saturates theinsulating bulk resistance with de- creasing temperature, resulting inresistivity plateau at low temperatures as a transport signature originatingfrom metallic surface modes protected by time reversal symmetry (TRS).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[296.0, 105, '%', 6],[308.0, 105, '%', 6],[319.0, 2.5, 'K', 6],[321.0, 14, 'T', 6]

Bi2Te2Se
###Resistivity plateau and extremely large magnetoresistance in NbAs2 and TaAs2|Yi-Yan Wang,Qiao-He Yu,Tian-Long Xia###
(1499112, 1499116)
 Suchcharacteristic has been found in several materials including Bi2Te2Se, SmB6etc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[269.0, 105, '%', 5],[281.0, 105, '%', 5],[292.0, 2.5, 'K', 5],[294.0, 14, 'T', 5]

SmB6
###Resistivity plateau and extremely large magnetoresistance in NbAs2 and TaAs2|Yi-Yan Wang,Qiao-He Yu,Tian-Long Xia###
(1499119, 1499121)
 Suchcharacteristic has been found in several materials including Bi2Te2Se, SmB6etc.
Featurization terminated normally.
0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[264.0, 105, '%', 5],[276.0, 105, '%', 5],[287.0, 2.5, 'K', 5],[289.0, 14, 'T', 5]

LaSb
###Resistivity plateau and extremely large magnetoresistance in NbAs2 and TaAs2|Yi-Yan Wang,Qiao-He Yu,Tian-Long Xia###
(1499149, 1499150)
 Recently, similar behavior has been observed in metallic com- pound LaSb,accompanying an extremely large magetoresistance (XMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[235.0, 105, '%', 4],[247.0, 105, '%', 4],[258.0, 2.5, 'K', 4],[260.0, 14, 'T', 4]

H
###Resistivity plateau and extremely large magnetoresistance in NbAs2 and TaAs2|Yi-Yan Wang,Qiao-He Yu,Tian-Long Xia###
(1499179, 1499179)
 Shubnikov-de Hass (SdH)oscillation at low temperatures further confirms the metallic behavior ofplateau region under magnetic fields.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[206.0, 105, '%', 3],[218.0, 105, '%', 3],[229.0, 2.5, 'K', 3],[231.0, 14, 'T', 3]

Sb
###Resistivity plateau and extremely large magnetoresistance in NbAs2 and TaAs2|Yi-Yan Wang,Qiao-He Yu,Tian-Long Xia###
(1499216, 1499216)
 LaSb[1] has been proposed by the authorsas a possible topological semimetal (TSM), while negative magnetoresistance isabsent at this moment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 105, '%', 2],[181.0, 105, '%', 2],[192.0, 2.5, 'K', 2],[194.0, 14, 'T', 2]

NbAs2/TaAs2
###Resistivity plateau and extremely large magnetoresistance in NbAs2 and TaAs2|Yi-Yan Wang,Qiao-He Yu,Tian-Long Xia###
(1499282, 1499288)
 Here, high quality single crystals of NbAs2/TaAs2 withinversion symmetry have been grown and the resistivity under magnetic field issystematically investigated.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[97.0, 105, '%', 1],[109.0, 105, '%', 1],[120.0, 2.5, 'K', 1],[122.0, 14, 'T', 1]

NbAs2
###Resistivity plateau and extremely large magnetoresistance in NbAs2 and TaAs2|Yi-Yan Wang,Qiao-He Yu,Tian-Long Xia###
(1499390, 1499392)
 Both of them exhibit metallic behavior under zeromagnetic field, and a metal-to-insulator transition occurs when a nonzeromagnetic field is applied, resulting in XMR (1.0105% for NbAs2 and 7.3105%for TaAs2 at 2.5 K  14 T).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 105, '%', 0],[5.0, 105, '%', 0],[16.0, 2.5, 'K', 0],[18.0, 14, 'T', 0]

TaAs2
###Resistivity plateau and extremely large magnetoresistance in NbAs2 and TaAs2|Yi-Yan Wang,Qiao-He Yu,Tian-Long Xia###
(1499403, 1499405)
 Both of them exhibit metallic behavior under zeromagnetic field, and a metal-to-insulator transition occurs when a nonzeromagnetic field is applied, resulting in XMR (1.0105% for NbAs2 and 7.3105%for TaAs2 at 2.5 K  14 T).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 105, '%', 0],[6.0, 105, '%', 0],[3.0, 2.5, 'K', 0],[5.0, 14, 'T', 0]

H
###Resistivity plateau and extremely large magnetoresistance in NbAs2 and TaAs2|Yi-Yan Wang,Qiao-He Yu,Tian-Long Xia###
(1499446, 1499446)
 With tempera- ture decreased, a resistivity plateauemerges after the insulator-like regime and SdH oscillation has also beenobserved in NbAs2 and TaAs2.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 105, '%', 1],[49.0, 105, '%', 1],[38.0, 2.5, 'K', 1],[36.0, 14, 'T', 1]

NbAs2
###Resistivity plateau and extremely large magnetoresistance in NbAs2 and TaAs2|Yi-Yan Wang,Qiao-He Yu,Tian-Long Xia###
(1499461, 1499463)
 With tempera- ture decreased, a resistivity plateauemerges after the insulator-like regime and SdH oscillation has also beenobserved in NbAs2 and TaAs2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 105, '%', 1],[64.0, 105, '%', 1],[53.0, 2.5, 'K', 1],[51.0, 14, 'T', 1]

TaAs2
###Resistivity plateau and extremely large magnetoresistance in NbAs2 and TaAs2|Yi-Yan Wang,Qiao-He Yu,Tian-Long Xia###
(1499467, 1499469)
 With tempera- ture decreased, a resistivity plateauemerges after the insulator-like regime and SdH oscillation has also beenobserved in NbAs2 and TaAs2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 105, '%', 1],[70.0, 105, '%', 1],[59.0, 2.5, 'K', 1],[57.0, 14, 'T', 1]

PtBi
###Robust tunability of magnetorestance in Half-Heusler RPtBi (R = Gd, Dy, Tm, and Lu) compounds|Eundeok Mun,Sergey L. Bud'ko,Paul C. Canfield###
(1499495, 1499496)
Robust tunability of magnetorestance in Half-Heusler R<missing VAR>PtBi (R<missing VAR>  Gd, Dy, Tm, and Lu) compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 140, 'kOe', 2],[148.0, 300, 'K', 3],[246.0, 120, 'K', 4],[286.0, 300, 'K', 5],[399.0, 140, 'kOe', 7]

Gd
###Robust tunability of magnetorestance in Half-Heusler RPtBi (R = Gd, Dy, Tm, and Lu) compounds|Eundeok Mun,Sergey L. Bud'ko,Paul C. Canfield###
(1499502, 1499502)
Robust tunability of magnetorestance in Half-Heusler R<missing VAR>PtBi (R<missing VAR>  Gd, Dy, Tm, and Lu) compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 140, 'kOe', 2],[142.0, 300, 'K', 3],[240.0, 120, 'K', 4],[280.0, 300, 'K', 5],[393.0, 140, 'kOe', 7]

Dy
###Robust tunability of magnetorestance in Half-Heusler RPtBi (R = Gd, Dy, Tm, and Lu) compounds|Eundeok Mun,Sergey L. Bud'ko,Paul C. Canfield###
(1499505, 1499505)
Robust tunability of magnetorestance in Half-Heusler R<missing VAR>PtBi (R<missing VAR>  Gd, Dy, Tm, and Lu) compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 140, 'kOe', 2],[139.0, 300, 'K', 3],[237.0, 120, 'K', 4],[277.0, 300, 'K', 5],[390.0, 140, 'kOe', 7]

Tm
###Robust tunability of magnetorestance in Half-Heusler RPtBi (R = Gd, Dy, Tm, and Lu) compounds|Eundeok Mun,Sergey L. Bud'ko,Paul C. Canfield###
(1499508, 1499508)
Robust tunability of magnetorestance in Half-Heusler R<missing VAR>PtBi (R<missing VAR>  Gd, Dy, Tm, and Lu) compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 140, 'kOe', 2],[136.0, 300, 'K', 3],[234.0, 120, 'K', 4],[274.0, 300, 'K', 5],[387.0, 140, 'kOe', 7]

Lu
###Robust tunability of magnetorestance in Half-Heusler RPtBi (R = Gd, Dy, Tm, and Lu) compounds|Eundeok Mun,Sergey L. Bud'ko,Paul C. Canfield###
(1499513, 1499513)
Robust tunability of magnetorestance in Half-Heusler R<missing VAR>PtBi (R<missing VAR>  Gd, Dy, Tm, and Lu) compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 140, 'kOe', 2],[131.0, 300, 'K', 3],[229.0, 120, 'K', 4],[269.0, 300, 'K', 5],[382.0, 140, 'kOe', 7]

PtBi
###Robust tunability of magnetorestance in Half-Heusler RPtBi (R = Gd, Dy, Tm, and Lu) compounds|Eundeok Mun,Sergey L. Bud'ko,Paul C. Canfield###
(1499541, 1499542)
 We present the magnetic field dependencies of transport properties forR<missing VAR>PtBi (R<missing VAR>  Gd, Dy, Tm, and Lu) half-Heusler compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 140, 'kOe', 1],[102.0, 300, 'K', 2],[200.0, 120, 'K', 3],[240.0, 300, 'K', 4],[353.0, 140, 'kOe', 6]

Gd
###Robust tunability of magnetorestance in Half-Heusler RPtBi (R = Gd, Dy, Tm, and Lu) compounds|Eundeok Mun,Sergey L. Bud'ko,Paul C. Canfield###
(1499548, 1499548)
 We present the magnetic field dependencies of transport properties forR<missing VAR>PtBi (R<missing VAR>  Gd, Dy, Tm, and Lu) half-Heusler compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 140, 'kOe', 1],[96.0, 300, 'K', 2],[194.0, 120, 'K', 3],[234.0, 300, 'K', 4],[347.0, 140, 'kOe', 6]

Dy
###Robust tunability of magnetorestance in Half-Heusler RPtBi (R = Gd, Dy, Tm, and Lu) compounds|Eundeok Mun,Sergey L. Bud'ko,Paul C. Canfield###
(1499551, 1499551)
 We present the magnetic field dependencies of transport properties forR<missing VAR>PtBi (R<missing VAR>  Gd, Dy, Tm, and Lu) half-Heusler compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 140, 'kOe', 1],[93.0, 300, 'K', 2],[191.0, 120, 'K', 3],[231.0, 300, 'K', 4],[344.0, 140, 'kOe', 6]

Tm
###Robust tunability of magnetorestance in Half-Heusler RPtBi (R = Gd, Dy, Tm, and Lu) compounds|Eundeok Mun,Sergey L. Bud'ko,Paul C. Canfield###
(1499554, 1499554)
 We present the magnetic field dependencies of transport properties forR<missing VAR>PtBi (R<missing VAR>  Gd, Dy, Tm, and Lu) half-Heusler compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 140, 'kOe', 1],[90.0, 300, 'K', 2],[188.0, 120, 'K', 3],[228.0, 300, 'K', 4],[341.0, 140, 'kOe', 6]

Lu
###Robust tunability of magnetorestance in Half-Heusler RPtBi (R = Gd, Dy, Tm, and Lu) compounds|Eundeok Mun,Sergey L. Bud'ko,Paul C. Canfield###
(1499559, 1499559)
 We present the magnetic field dependencies of transport properties forR<missing VAR>PtBi (R<missing VAR>  Gd, Dy, Tm, and Lu) half-Heusler compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 140, 'kOe', 1],[85.0, 300, 'K', 2],[183.0, 120, 'K', 3],[223.0, 300, 'K', 4],[336.0, 140, 'kOe', 6]

PtBi
###Robust tunability of magnetorestance in Half-Heusler RPtBi (R = Gd, Dy, Tm, and Lu) compounds|Eundeok Mun,Sergey L. Bud'ko,Paul C. Canfield###
(1499589, 1499590)
 Temperature andfield dependent resistivity measurements of high quality R<missing VAR>PtBi singlecrystals reveal an unusually large, non-saturating magnetoresistance (MR) up to300 K under a moderate magnetic field of H  140 kOe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 140, 'kOe', 0],[54.0, 300, 'K', 1],[152.0, 120, 'K', 2],[192.0, 300, 'K', 3],[305.0, 140, 'kOe', 5]

K
###Robust tunability of magnetorestance in Half-Heusler RPtBi (R = Gd, Dy, Tm, and Lu) compounds|Eundeok Mun,Sergey L. Bud'ko,Paul C. Canfield###
(1499624, 1499624)
 Temperature andfield dependent resistivity measurements of high quality R<missing VAR>PtBi singlecrystals reveal an unusually large, non-saturating magnetoresistance (MR) up to300 K under a moderate magnetic field of H  140 kOe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 140, 'kOe', 0],[20.0, 300, 'K', 1],[118.0, 120, 'K', 2],[158.0, 300, 'K', 3],[271.0, 140, 'kOe', 5]

H
###Robust tunability of magnetorestance in Half-Heusler RPtBi (R = Gd, Dy, Tm, and Lu) compounds|Eundeok Mun,Sergey L. Bud'ko,Paul C. Canfield###
(1499638, 1499638)
 Temperature andfield dependent resistivity measurements of high quality R<missing VAR>PtBi singlecrystals reveal an unusually large, non-saturating magnetoresistance (MR) up to300 K under a moderate magnetic field of H  140 kOe.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 140, 'kOe', 0],[6.0, 300, 'K', 1],[104.0, 120, 'K', 2],[144.0, 300, 'K', 3],[257.0, 140, 'kOe', 5]

At
###Robust tunability of magnetorestance in Half-Heusler RPtBi (R = Gd, Dy, Tm, and Lu) compounds|Eundeok Mun,Sergey L. Bud'ko,Paul C. Canfield###
(1499643, 1499643)
 At 300 K, the large MReffect decreases as the rare-earth is traversed from Gd to Lu and the magneticfield dependence of MR shows a deviation from the conventional H2behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 140, 'kOe', 1],[1.0, 300, 'K', 0],[99.0, 120, 'K', 1],[139.0, 300, 'K', 2],[252.0, 140, 'kOe', 4]

Gd
###Robust tunability of magnetorestance in Half-Heusler RPtBi (R = Gd, Dy, Tm, and Lu) compounds|Eundeok Mun,Sergey L. Bud'ko,Paul C. Canfield###
(1499673, 1499673)
 At 300 K, the large MReffect decreases as the rare-earth is traversed from Gd to Lu and the magneticfield dependence of MR shows a deviation from the conventional H2behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 140, 'kOe', 1],[29.0, 300, 'K', 0],[69.0, 120, 'K', 1],[109.0, 300, 'K', 2],[222.0, 140, 'kOe', 4]

Lu
###Robust tunability of magnetorestance in Half-Heusler RPtBi (R = Gd, Dy, Tm, and Lu) compounds|Eundeok Mun,Sergey L. Bud'ko,Paul C. Canfield###
(1499677, 1499677)
 At 300 K, the large MReffect decreases as the rare-earth is traversed from Gd to Lu and the magneticfield dependence of MR shows a deviation from the conventional H2behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 140, 'kOe', 1],[33.0, 300, 'K', 0],[65.0, 120, 'K', 1],[105.0, 300, 'K', 2],[218.0, 140, 'kOe', 4]

H2
###Robust tunability of magnetorestance in Half-Heusler RPtBi (R = Gd, Dy, Tm, and Lu) compounds|Eundeok Mun,Sergey L. Bud'ko,Paul C. Canfield###
(1499707, 1499708)
 At 300 K, the large MReffect decreases as the rare-earth is traversed from Gd to Lu and the magneticfield dependence of MR shows a deviation from the conventional H2behavior.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 140, 'kOe', 1],[63.0, 300, 'K', 0],[34.0, 120, 'K', 1],[74.0, 300, 'K', 2],[187.0, 140, 'kOe', 4]

H
###Robust tunability of magnetorestance in Half-Heusler RPtBi (R = Gd, Dy, Tm, and Lu) compounds|Eundeok Mun,Sergey L. Bud'ko,Paul C. Canfield###
(1499722, 1499722)
 The Hall coefficient (R<missing VAR>H) for R<missing VAR>  Gd indicates a sign changearound 120 K, whereas R<missing VAR>H curves for R<missing VAR>  Dy, Tm, and Lu remain positivefor all measured temperatures.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 140, 'kOe', 2],[78.0, 300, 'K', 1],[20.0, 120, 'K', 0],[60.0, 300, 'K', 1],[173.0, 140, 'kOe', 3]

Gd
###Robust tunability of magnetorestance in Half-Heusler RPtBi (R = Gd, Dy, Tm, and Lu) compounds|Eundeok Mun,Sergey L. Bud'ko,Paul C. Canfield###
(1499730, 1499730)
 The Hall coefficient (R<missing VAR>H) for R<missing VAR>  Gd indicates a sign changearound 120 K, whereas R<missing VAR>H curves for R<missing VAR>  Dy, Tm, and Lu remain positivefor all measured temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 140, 'kOe', 2],[86.0, 300, 'K', 1],[12.0, 120, 'K', 0],[52.0, 300, 'K', 1],[165.0, 140, 'kOe', 3]

H
###Robust tunability of magnetorestance in Half-Heusler RPtBi (R = Gd, Dy, Tm, and Lu) compounds|Eundeok Mun,Sergey L. Bud'ko,Paul C. Canfield###
(1499748, 1499748)
 The Hall coefficient (R<missing VAR>H) for R<missing VAR>  Gd indicates a sign changearound 120 K, whereas R<missing VAR>H curves for R<missing VAR>  Dy, Tm, and Lu remain positivefor all measured temperatures.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 140, 'kOe', 2],[104.0, 300, 'K', 1],[6.0, 120, 'K', 0],[34.0, 300, 'K', 1],[147.0, 140, 'kOe', 3]

Dy
###Robust tunability of magnetorestance in Half-Heusler RPtBi (R = Gd, Dy, Tm, and Lu) compounds|Eundeok Mun,Sergey L. Bud'ko,Paul C. Canfield###
(1499757, 1499757)
 The Hall coefficient (R<missing VAR>H) for R<missing VAR>  Gd indicates a sign changearound 120 K, whereas R<missing VAR>H curves for R<missing VAR>  Dy, Tm, and Lu remain positivefor all measured temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 140, 'kOe', 2],[113.0, 300, 'K', 1],[15.0, 120, 'K', 0],[25.0, 300, 'K', 1],[138.0, 140, 'kOe', 3]

Tm
###Robust tunability of magnetorestance in Half-Heusler RPtBi (R = Gd, Dy, Tm, and Lu) compounds|Eundeok Mun,Sergey L. Bud'ko,Paul C. Canfield###
(1499760, 1499760)
 The Hall coefficient (R<missing VAR>H) for R<missing VAR>  Gd indicates a sign changearound 120 K, whereas R<missing VAR>H curves for R<missing VAR>  Dy, Tm, and Lu remain positivefor all measured temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 140, 'kOe', 2],[116.0, 300, 'K', 1],[18.0, 120, 'K', 0],[22.0, 300, 'K', 1],[135.0, 140, 'kOe', 3]

Lu
###Robust tunability of magnetorestance in Half-Heusler RPtBi (R = Gd, Dy, Tm, and Lu) compounds|Eundeok Mun,Sergey L. Bud'ko,Paul C. Canfield###
(1499765, 1499765)
 The Hall coefficient (R<missing VAR>H) for R<missing VAR>  Gd indicates a sign changearound 120 K, whereas R<missing VAR>H curves for R<missing VAR>  Dy, Tm, and Lu remain positivefor all measured temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 140, 'kOe', 2],[121.0, 300, 'K', 1],[23.0, 120, 'K', 0],[17.0, 300, 'K', 1],[130.0, 140, 'kOe', 3]

At
###Robust tunability of magnetorestance in Half-Heusler RPtBi (R = Gd, Dy, Tm, and Lu) compounds|Eundeok Mun,Sergey L. Bud'ko,Paul C. Canfield###
(1499781, 1499781)
 At 300 K, the Hall resistivity reveals adeviation from the linear field dependence for all compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 140, 'kOe', 3],[137.0, 300, 'K', 2],[39.0, 120, 'K', 1],[1.0, 300, 'K', 0],[114.0, 140, 'kOe', 2]

V/K
###Robust tunability of magnetorestance in Half-Heusler RPtBi (R = Gd, Dy, Tm, and Lu) compounds|Eundeok Mun,Sergey L. Bud'ko,Paul C. Canfield###
(1499890, 1499892)
 A highlyenhanced thermoelectric power under applied magnetic field is observed as highas sim100 muV/K at 140 kOe.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[250.0, 140, 'kOe', 5],[246.0, 300, 'K', 4],[148.0, 120, 'K', 3],[108.0, 300, 'K', 2],[3.0, 140, 'kOe', 0]

H
###The role of band-index-dependent transport relaxation times in anomalous Hall effect|Cong Xiao,Dingping Li,Zhongshui Ma###
(1500029, 1500029)
 We revisit model calculations of the anomalous Hall effect (AHE) and showthat, in isotropic Rashba-coupled two-dimensional electron gas (2DEG) withpointlike potential impurities, the full solution of the semiclassicalBoltzmann equation (SBE) may differ from the widely-used 1/tau 1/tauperp solution [Phys.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 68, ',', 2],[176.0, 79, ',', 5]

SB
###The role of band-index-dependent transport relaxation times in anomalous Hall effect|Cong Xiao,Dingping Li,Zhongshui Ma###
(1500092, 1500093)
 We revisit model calculations of the anomalous Hall effect (AHE) and showthat, in isotropic Rashba-coupled two-dimensional electron gas (2DEG) withpointlike potential impurities, the full solution of the semiclassicalBoltzmann equation (SBE) may differ from the widely-used 1/tau 1/tauperp solution [Phys.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 68, ',', 2],[112.0, 79, ',', 5]

B
###The role of band-index-dependent transport relaxation times in anomalous Hall effect|Cong Xiao,Dingping Li,Zhongshui Ma###
(1500129, 1500129)
 B 68, 165311 (2003)].
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 68, ',', 0],[76.0, 79, ',', 3]

H
###The role of band-index-dependent transport relaxation times in anomalous Hall effect|Cong Xiao,Dingping Li,Zhongshui Ma###
(1500149, 1500149)
 Our approach to AHE<missing VAR>is analogous to the SBE<missing VAR>-based analysis of the anisotropic magnetoresistanceleading to an integral equation for the distribution function [Phys.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 68, ',', 1],[56.0, 79, ',', 2]

SB
###The role of band-index-dependent transport relaxation times in anomalous Hall effect|Cong Xiao,Dingping Li,Zhongshui Ma###
(1500161, 1500162)
 Our approach to AHE<missing VAR>is analogous to the SBE<missing VAR>-based analysis of the anisotropic magnetoresistanceleading to an integral equation for the distribution function [Phys.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 68, ',', 1],[43.0, 79, ',', 2]

B
###The role of band-index-dependent transport relaxation times in anomalous Hall effect|Cong Xiao,Dingping Li,Zhongshui Ma###
(1500203, 1500203)
 B 79,045427 (2009)] but in the present case, we reduce the description toband-index-dependent transport relaxation times.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 68, ',', 3],[2.0, 79, ',', 0]

SB
###The role of band-index-dependent transport relaxation times in anomalous Hall effect|Cong Xiao,Dingping Li,Zhongshui Ma###
(1500338, 1500339)
 Detailed calculations show that, for intrinsic and hybrid skewscatterings the difference between 1/tau  1/tauperp and thefull solution of SBE<missing VAR> is notable for large Fermi energies.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[207.0, 68, ',', 5],[133.0, 79, ',', 2]

H
###The role of band-index-dependent transport relaxation times in anomalous Hall effect|Cong Xiao,Dingping Li,Zhongshui Ma###
(1500450, 1500450)
 The coordinate-shiftcontribution to AHE<missing VAR> in the considered case notably differs from that in thelimit of smooth disorder potential analyzed before.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[319.0, 68, ',', 7],[245.0, 79, ',', 4]

ZrSiS
###Large nonsaturating magnetoresistance and signature of non-degenerate Dirac nodes in ZrSiS|R. Singha,A. Pariari,B. Satpati,P. Mandal###
(1500519, 1500521)
Large nonsaturating magnetoresistance and signature of non-degenerate Dirac nodes in ZrSiS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[366.0, 2, 'K', 6],[369.0, 9, 'T', 6]

In
###Large nonsaturating magnetoresistance and signature of non-degenerate Dirac nodes in ZrSiS|R. Singha,A. Pariari,B. Satpati,P. Mandal###
(1500598, 1500598)
 In all the reported materials, linear dispersionsurvives only up to a few hundred meV from the Dirac or Weyl nodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[289.0, 2, 'K', 4],[292.0, 9, 'T', 4]

V
###Large nonsaturating magnetoresistance and signature of non-degenerate Dirac nodes in ZrSiS|R. Singha,A. Pariari,B. Satpati,P. Mandal###
(1500629, 1500629)
 In all the reported materials, linear dispersionsurvives only up to a few hundred meV from the Dirac or Weyl nodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[258.0, 2, 'K', 4],[261.0, 9, 'T', 4]

In
###Large nonsaturating magnetoresistance and signature of non-degenerate Dirac nodes in ZrSiS|R. Singha,A. Pariari,B. Satpati,P. Mandal###
(1500697, 1500697)
 In ZrSiS, ARPES measurements have shown an unusually robust lineardispersion (up to sim2 e<missing VAR>V) with multiple non-degenerate Dirac nodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[190.0, 2, 'K', 2],[193.0, 9, 'T', 2]

ZrSiS
###Large nonsaturating magnetoresistance and signature of non-degenerate Dirac nodes in ZrSiS|R. Singha,A. Pariari,B. Satpati,P. Mandal###
(1500699, 1500701)
 In ZrSiS, ARPES measurements have shown an unusually robust lineardispersion (up to sim2 e<missing VAR>V) with multiple non-degenerate Dirac nodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, 2, 'K', 2],[189.0, 9, 'T', 2]

S
###Large nonsaturating magnetoresistance and signature of non-degenerate Dirac nodes in ZrSiS|R. Singha,A. Pariari,B. Satpati,P. Mandal###
(1500708, 1500708)
 In ZrSiS, ARPES measurements have shown an unusually robust lineardispersion (up to sim2 e<missing VAR>V) with multiple non-degenerate Dirac nodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 2, 'K', 2],[182.0, 9, 'T', 2]

V
###Large nonsaturating magnetoresistance and signature of non-degenerate Dirac nodes in ZrSiS|R. Singha,A. Pariari,B. Satpati,P. Mandal###
(1500736, 1500736)
 In ZrSiS, ARPES measurements have shown an unusually robust lineardispersion (up to sim2 e<missing VAR>V) with multiple non-degenerate Dirac nodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 2, 'K', 2],[154.0, 9, 'T', 2]

In
###Large nonsaturating magnetoresistance and signature of non-degenerate Dirac nodes in ZrSiS|R. Singha,A. Pariari,B. Satpati,P. Mandal###
(1500752, 1500752)
 In thiscontext, we present the magnetotransport study on ZrSiS crystal, whichrepresents a large family of materials (textitWHM<missing VAR> with textitW  Zr, Hf;textitH  Si, Ge, Sn; textitM<missing VAR>  O, S, Se, Te) with identical bandtopology.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 2, 'K', 1],[138.0, 9, 'T', 1]

ZrSiS
###Large nonsaturating magnetoresistance and signature of non-degenerate Dirac nodes in ZrSiS|R. Singha,A. Pariari,B. Satpati,P. Mandal###
(1500772, 1500774)
 In thiscontext, we present the magnetotransport study on ZrSiS crystal, whichrepresents a large family of materials (textitWHM<missing VAR> with textitW  Zr, Hf;textitH  Si, Ge, Sn; textitM<missing VAR>  O, S, Se, Te) with identical bandtopology.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 2, 'K', 1],[116.0, 9, 'T', 1]

WH
###Large nonsaturating magnetoresistance and signature of non-degenerate Dirac nodes in ZrSiS|R. Singha,A. Pariari,B. Satpati,P. Mandal###
(1500796, 1500797)
 In thiscontext, we present the magnetotransport study on ZrSiS crystal, whichrepresents a large family of materials (textitWHM<missing VAR> with textitW  Zr, Hf;textitH  Si, Ge, Sn; textitM<missing VAR>  O, S, Se, Te) with identical bandtopology.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 2, 'K', 1],[93.0, 9, 'T', 1]

W
###Large nonsaturating magnetoresistance and signature of non-degenerate Dirac nodes in ZrSiS|R. Singha,A. Pariari,B. Satpati,P. Mandal###
(1500803, 1500803)
 In thiscontext, we present the magnetotransport study on ZrSiS crystal, whichrepresents a large family of materials (textitWHM<missing VAR> with textitW  Zr, Hf;textitH  Si, Ge, Sn; textitM<missing VAR>  O, S, Se, Te) with identical bandtopology.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 2, 'K', 1],[87.0, 9, 'T', 1]

Zr
###Large nonsaturating magnetoresistance and signature of non-degenerate Dirac nodes in ZrSiS|R. Singha,A. Pariari,B. Satpati,P. Mandal###
(1500806, 1500806)
 In thiscontext, we present the magnetotransport study on ZrSiS crystal, whichrepresents a large family of materials (textitWHM<missing VAR> with textitW  Zr, Hf;textitH  Si, Ge, Sn; textitM<missing VAR>  O, S, Se, Te) with identical bandtopology.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 2, 'K', 1],[84.0, 9, 'T', 1]

Hf
###Large nonsaturating magnetoresistance and signature of non-degenerate Dirac nodes in ZrSiS|R. Singha,A. Pariari,B. Satpati,P. Mandal###
(1500809, 1500809)
 In thiscontext, we present the magnetotransport study on ZrSiS crystal, whichrepresents a large family of materials (textitWHM<missing VAR> with textitW  Zr, Hf;textitH  Si, Ge, Sn; textitM<missing VAR>  O, S, Se, Te) with identical bandtopology.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 2, 'K', 1],[81.0, 9, 'T', 1]

H
###Large nonsaturating magnetoresistance and signature of non-degenerate Dirac nodes in ZrSiS|R. Singha,A. Pariari,B. Satpati,P. Mandal###
(1500814, 1500814)
 In thiscontext, we present the magnetotransport study on ZrSiS crystal, whichrepresents a large family of materials (textitWHM<missing VAR> with textitW  Zr, Hf;textitH  Si, Ge, Sn; textitM<missing VAR>  O, S, Se, Te) with identical bandtopology.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 2, 'K', 1],[76.0, 9, 'T', 1]

Si
###Large nonsaturating magnetoresistance and signature of non-degenerate Dirac nodes in ZrSiS|R. Singha,A. Pariari,B. Satpati,P. Mandal###
(1500817, 1500817)
 In thiscontext, we present the magnetotransport study on ZrSiS crystal, whichrepresents a large family of materials (textitWHM<missing VAR> with textitW  Zr, Hf;textitH  Si, Ge, Sn; textitM<missing VAR>  O, S, Se, Te) with identical bandtopology.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 2, 'K', 1],[73.0, 9, 'T', 1]

Ge
###Large nonsaturating magnetoresistance and signature of non-degenerate Dirac nodes in ZrSiS|R. Singha,A. Pariari,B. Satpati,P. Mandal###
(1500820, 1500820)
 In thiscontext, we present the magnetotransport study on ZrSiS crystal, whichrepresents a large family of materials (textitWHM<missing VAR> with textitW  Zr, Hf;textitH  Si, Ge, Sn; textitM<missing VAR>  O, S, Se, Te) with identical bandtopology.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 2, 'K', 1],[70.0, 9, 'T', 1]

Sn
###Large nonsaturating magnetoresistance and signature of non-degenerate Dirac nodes in ZrSiS|R. Singha,A. Pariari,B. Satpati,P. Mandal###
(1500823, 1500823)
 In thiscontext, we present the magnetotransport study on ZrSiS crystal, whichrepresents a large family of materials (textitWHM<missing VAR> with textitW  Zr, Hf;textitH  Si, Ge, Sn; textitM<missing VAR>  O, S, Se, Te) with identical bandtopology.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 2, 'K', 1],[67.0, 9, 'T', 1]

O
###Large nonsaturating magnetoresistance and signature of non-degenerate Dirac nodes in ZrSiS|R. Singha,A. Pariari,B. Satpati,P. Mandal###
(1500830, 1500830)
 In thiscontext, we present the magnetotransport study on ZrSiS crystal, whichrepresents a large family of materials (textitWHM<missing VAR> with textitW  Zr, Hf;textitH  Si, Ge, Sn; textitM<missing VAR>  O, S, Se, Te) with identical bandtopology.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 2, 'K', 1],[60.0, 9, 'T', 1]

S
###Large nonsaturating magnetoresistance and signature of non-degenerate Dirac nodes in ZrSiS|R. Singha,A. Pariari,B. Satpati,P. Mandal###
(1500833, 1500833)
 In thiscontext, we present the magnetotransport study on ZrSiS crystal, whichrepresents a large family of materials (textitWHM<missing VAR> with textitW  Zr, Hf;textitH  Si, Ge, Sn; textitM<missing VAR>  O, S, Se, Te) with identical bandtopology.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 2, 'K', 1],[57.0, 9, 'T', 1]

Se
###Large nonsaturating magnetoresistance and signature of non-degenerate Dirac nodes in ZrSiS|R. Singha,A. Pariari,B. Satpati,P. Mandal###
(1500836, 1500836)
 In thiscontext, we present the magnetotransport study on ZrSiS crystal, whichrepresents a large family of materials (textitWHM<missing VAR> with textitW  Zr, Hf;textitH  Si, Ge, Sn; textitM<missing VAR>  O, S, Se, Te) with identical bandtopology.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 2, 'K', 1],[54.0, 9, 'T', 1]

Te
###Large nonsaturating magnetoresistance and signature of non-degenerate Dirac nodes in ZrSiS|R. Singha,A. Pariari,B. Satpati,P. Mandal###
(1500839, 1500839)
 In thiscontext, we present the magnetotransport study on ZrSiS crystal, whichrepresents a large family of materials (textitWHM<missing VAR> with textitW  Zr, Hf;textitH  Si, Ge, Sn; textitM<missing VAR>  O, S, Se, Te) with identical bandtopology.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 2, 'K', 1],[51.0, 9, 'T', 1]

FeSe
###Pressure dependence of upper critical fields in FeSe single crystals|Ji-Hoon Kang,Soon-Gil Jung,Sangyun Lee,Eunsung Park,Jiunn-Yuan Lin,Dmitriy A Chareev,Alexander N Vasiliev,Tuson Park###
(1501053, 1501054)
Pressure dependence of upper critical fields in FeSe single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 2.57, 'GPa', 1],[174.0, 1.2, 'GPa', 3]

H
###Pressure dependence of upper critical fields in FeSe single crystals|Ji-Hoon Kang,Soon-Gil Jung,Sangyun Lee,Eunsung Park,Jiunn-Yuan Lin,Dmitriy A Chareev,Alexander N Vasiliev,Tuson Park###
(1501085, 1501085)
 We investigate the pressure dependence of the upper critical fields(mu0Hc<missing VAR>2) for FeSe single crystals with pressure up to 2.57 GPa.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 2.57, 'GPa', 0],[143.0, 1.2, 'GPa', 2]

FeSe
###Pressure dependence of upper critical fields in FeSe single crystals|Ji-Hoon Kang,Soon-Gil Jung,Sangyun Lee,Eunsung Park,Jiunn-Yuan Lin,Dmitriy A Chareev,Alexander N Vasiliev,Tuson Park###
(1501092, 1501093)
 We investigate the pressure dependence of the upper critical fields(mu0Hc<missing VAR>2) for FeSe single crystals with pressure up to 2.57 GPa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 2.57, 'GPa', 0],[135.0, 1.2, 'GPa', 2]

(SC)
###Pressure dependence of upper critical fields in FeSe single crystals|Ji-Hoon Kang,Soon-Gil Jung,Sangyun Lee,Eunsung Park,Jiunn-Yuan Lin,Dmitriy A Chareev,Alexander N Vasiliev,Tuson Park###
(1501114, 1501117)
The superconducting (SC) properties show a disparate behavior across a criticalpressure where the pressure-induced antiferromagnetic phase coexists withsuperconductivity.
Featurization successful!
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 2.57, 'GPa', 1],[111.0, 1.2, 'GPa', 1]

H
###Pressure dependence of upper critical fields in FeSe single crystals|Ji-Hoon Kang,Soon-Gil Jung,Sangyun Lee,Eunsung Park,Jiunn-Yuan Lin,Dmitriy A Chareev,Alexander N Vasiliev,Tuson Park###
(1501164, 1501164)
 The magnetoresistance for H//ab and H//c<missing VAR> is verydifferent for H//c<missing VAR>, magnetic field induces and enhances a hump in theresistivity close to the Tc for pressures higher than 1.2 GPa, while it isabsent for H//ab.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 2.57, 'GPa', 2],[64.0, 1.2, 'GPa', 0]

H
###Pressure dependence of upper critical fields in FeSe single crystals|Ji-Hoon Kang,Soon-Gil Jung,Sangyun Lee,Eunsung Park,Jiunn-Yuan Lin,Dmitriy A Chareev,Alexander N Vasiliev,Tuson Park###
(1501171, 1501171)
 The magnetoresistance for H//ab and H//c<missing VAR> is verydifferent for H//c<missing VAR>, magnetic field induces and enhances a hump in theresistivity close to the Tc for pressures higher than 1.2 GPa, while it isabsent for H//ab.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 2.57, 'GPa', 2],[57.0, 1.2, 'GPa', 0]

H
###Pressure dependence of upper critical fields in FeSe single crystals|Ji-Hoon Kang,Soon-Gil Jung,Sangyun Lee,Eunsung Park,Jiunn-Yuan Lin,Dmitriy A Chareev,Alexander N Vasiliev,Tuson Park###
(1501185, 1501185)
 The magnetoresistance for H//ab and H//c<missing VAR> is verydifferent for H//c<missing VAR>, magnetic field induces and enhances a hump in theresistivity close to the Tc for pressures higher than 1.2 GPa, while it isabsent for H//ab.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 2.57, 'GPa', 2],[43.0, 1.2, 'GPa', 0]

H
###Pressure dependence of upper critical fields in FeSe single crystals|Ji-Hoon Kang,Soon-Gil Jung,Sangyun Lee,Eunsung Park,Jiunn-Yuan Lin,Dmitriy A Chareev,Alexander N Vasiliev,Tuson Park###
(1501242, 1501242)
 The magnetoresistance for H//ab and H//c<missing VAR> is verydifferent for H//c<missing VAR>, magnetic field induces and enhances a hump in theresistivity close to the Tc for pressures higher than 1.2 GPa, while it isabsent for H//ab.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 2.57, 'GPa', 2],[14.0, 1.2, 'GPa', 0]

H
###Pressure dependence of upper critical fields in FeSe single crystals|Ji-Hoon Kang,Soon-Gil Jung,Sangyun Lee,Eunsung Park,Jiunn-Yuan Lin,Dmitriy A Chareev,Alexander N Vasiliev,Tuson Park###
(1501256, 1501256)
 Since the measured mu0Hc<missing VAR>2 for FeSe samples issmaller than the orbital limited upper critical field (Horbc<missing VAR>2)estimated by the Werthamer Helfand and Hohenberg (WHH) model, the Makiparameter (alpha) related to Pauli spin-paramagnetic effects is additionallyconsidered to describe the temperature dependence of mu0Hc<missing VAR>2(T).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 2.57, 'GPa', 3],[28.0, 1.2, 'GPa', 1]

FeSe
###Pressure dependence of upper critical fields in FeSe single crystals|Ji-Hoon Kang,Soon-Gil Jung,Sangyun Lee,Eunsung Park,Jiunn-Yuan Lin,Dmitriy A Chareev,Alexander N Vasiliev,Tuson Park###
(1501262, 1501263)
 Since the measured mu0Hc<missing VAR>2 for FeSe samples issmaller than the orbital limited upper critical field (Horbc<missing VAR>2)estimated by the Werthamer Helfand and Hohenberg (WHH) model, the Makiparameter (alpha) related to Pauli spin-paramagnetic effects is additionallyconsidered to describe the temperature dependence of mu0Hc<missing VAR>2(T).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 2.57, 'GPa', 3],[34.0, 1.2, 'GPa', 1]

H
###Pressure dependence of upper critical fields in FeSe single crystals|Ji-Hoon Kang,Soon-Gil Jung,Sangyun Lee,Eunsung Park,Jiunn-Yuan Lin,Dmitriy A Chareev,Alexander N Vasiliev,Tuson Park###
(1501287, 1501287)
 Since the measured mu0Hc<missing VAR>2 for FeSe samples issmaller than the orbital limited upper critical field (Horbc<missing VAR>2)estimated by the Werthamer Helfand and Hohenberg (WHH) model, the Makiparameter (alpha) related to Pauli spin-paramagnetic effects is additionallyconsidered to describe the temperature dependence of mu0Hc<missing VAR>2(T).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 2.57, 'GPa', 3],[59.0, 1.2, 'GPa', 1]

(WHH)
###Pressure dependence of upper critical fields in FeSe single crystals|Ji-Hoon Kang,Soon-Gil Jung,Sangyun Lee,Eunsung Park,Jiunn-Yuan Lin,Dmitriy A Chareev,Alexander N Vasiliev,Tuson Park###
(1501308, 1501312)
 Since the measured mu0Hc<missing VAR>2 for FeSe samples issmaller than the orbital limited upper critical field (Horbc<missing VAR>2)estimated by the Werthamer Helfand and Hohenberg (WHH) model, the Makiparameter (alpha) related to Pauli spin-paramagnetic effects is additionallyconsidered to describe the temperature dependence of mu0Hc<missing VAR>2(T).
Featurization successful!
0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[202.0, 2.57, 'GPa', 3],[80.0, 1.2, 'GPa', 1]

H
###Pressure dependence of upper critical fields in FeSe single crystals|Ji-Hoon Kang,Soon-Gil Jung,Sangyun Lee,Eunsung Park,Jiunn-Yuan Lin,Dmitriy A Chareev,Alexander N Vasiliev,Tuson Park###
(1501361, 1501361)
 Since the measured mu0Hc<missing VAR>2 for FeSe samples issmaller than the orbital limited upper critical field (Horbc<missing VAR>2)estimated by the Werthamer Helfand and Hohenberg (WHH) model, the Makiparameter (alpha) related to Pauli spin-paramagnetic effects is additionallyconsidered to describe the temperature dependence of mu0Hc<missing VAR>2(T).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[255.0, 2.57, 'GPa', 3],[133.0, 1.2, 'GPa', 1]

H
###Pressure dependence of upper critical fields in FeSe single crystals|Ji-Hoon Kang,Soon-Gil Jung,Sangyun Lee,Eunsung Park,Jiunn-Yuan Lin,Dmitriy A Chareev,Alexander N Vasiliev,Tuson Park###
(1501391, 1501391)
Interestingly, the alpha value is hardly affected by pressure for H//ab,while it strongly increases with pressure for H//c<missing VAR>.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[285.0, 2.57, 'GPa', 4],[163.0, 1.2, 'GPa', 2]

H
###Pressure dependence of upper critical fields in FeSe single crystals|Ji-Hoon Kang,Soon-Gil Jung,Sangyun Lee,Eunsung Park,Jiunn-Yuan Lin,Dmitriy A Chareev,Alexander N Vasiliev,Tuson Park###
(1501412, 1501412)
Interestingly, the alpha value is hardly affected by pressure for H//ab,while it strongly increases with pressure for H//c<missing VAR>.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[306.0, 2.57, 'GPa', 4],[184.0, 1.2, 'GPa', 2]

H
###Pressure dependence of upper critical fields in FeSe single crystals|Ji-Hoon Kang,Soon-Gil Jung,Sangyun Lee,Eunsung Park,Jiunn-Yuan Lin,Dmitriy A Chareev,Alexander N Vasiliev,Tuson Park###
(1501431, 1501431)
 The pressure evolution ofthe mu0Hc<missing VAR>2(0)s<missing VAR> for the FeSe single crystals is found to be almostsimilar to that of Tc(P), suggesting that the pressure-induced magneticorder adversely affects the upper critical fields as well as the SC transitiontemperature.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[325.0, 2.57, 'GPa', 5],[203.0, 1.2, 'GPa', 3]

FeSe
###Pressure dependence of upper critical fields in FeSe single crystals|Ji-Hoon Kang,Soon-Gil Jung,Sangyun Lee,Eunsung Park,Jiunn-Yuan Lin,Dmitriy A Chareev,Alexander N Vasiliev,Tuson Park###
(1501443, 1501444)
 The pressure evolution ofthe mu0Hc<missing VAR>2(0)s<missing VAR> for the FeSe single crystals is found to be almostsimilar to that of Tc(P), suggesting that the pressure-induced magneticorder adversely affects the upper critical fields as well as the SC transitiontemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[337.0, 2.57, 'GPa', 5],[215.0, 1.2, 'GPa', 3]

(P)
###Pressure dependence of upper critical fields in FeSe single crystals|Ji-Hoon Kang,Soon-Gil Jung,Sangyun Lee,Eunsung Park,Jiunn-Yuan Lin,Dmitriy A Chareev,Alexander N Vasiliev,Tuson Park###
(1501471, 1501473)
 The pressure evolution ofthe mu0Hc<missing VAR>2(0)s<missing VAR> for the FeSe single crystals is found to be almostsimilar to that of Tc(P), suggesting that the pressure-induced magneticorder adversely affects the upper critical fields as well as the SC transitiontemperature.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[365.0, 2.57, 'GPa', 5],[243.0, 1.2, 'GPa', 3]

SC
###Pressure dependence of upper critical fields in FeSe single crystals|Ji-Hoon Kang,Soon-Gil Jung,Sangyun Lee,Eunsung Park,Jiunn-Yuan Lin,Dmitriy A Chareev,Alexander N Vasiliev,Tuson Park###
(1501511, 1501512)
 The pressure evolution ofthe mu0Hc<missing VAR>2(0)s<missing VAR> for the FeSe single crystals is found to be almostsimilar to that of Tc(P), suggesting that the pressure-induced magneticorder adversely affects the upper critical fields as well as the SC transitiontemperature.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[405.0, 2.57, 'GPa', 5],[283.0, 1.2, 'GPa', 3]

Co
###Antiferromagnetic Coupling between Surface and Bulk Magnetization and Anomalous Magnetic Transport in Electro-deposited Co Film|Surendra Singh,C. L. Prajapat,D. Bhattacharya,S. K. Ghosh,M. R. Gonal,S. Basu###
(1501556, 1501556)
Antiferromagnetic Coupling between Surface and Bulk Magnetization and Anomalous Magnetic Transport in Electro-deposited Co Film.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 68, '%', 2]

Co
###Antiferromagnetic Coupling between Surface and Bulk Magnetization and Anomalous Magnetic Transport in Electro-deposited Co Film|Surendra Singh,C. L. Prajapat,D. Bhattacharya,S. K. Ghosh,M. R. Gonal,S. Basu###
(1501577, 1501577)
 We report an interesting magnetic behavior of a Co film (thickness  350AA) grown on Si/Ti/Cu buffer layer by electro-deposition (ED) technique.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 68, '%', 1]

Si/Ti/Cu
###Antiferromagnetic Coupling between Surface and Bulk Magnetization and Anomalous Magnetic Transport in Electro-deposited Co Film|Surendra Singh,C. L. Prajapat,D. Bhattacharya,S. K. Ghosh,M. R. Gonal,S. Basu###
(1501596, 1501600)
 We report an interesting magnetic behavior of a Co film (thickness  350AA) grown on Si/Ti/Cu buffer layer by electro-deposition (ED) technique.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[100.0, 68, '%', 1]

PN
###Antiferromagnetic Coupling between Surface and Bulk Magnetization and Anomalous Magnetic Transport in Electro-deposited Co Film|Surendra Singh,C. L. Prajapat,D. Bhattacharya,S. K. Ghosh,M. R. Gonal,S. Basu###
(1501643, 1501644)
Using depth sensitive X<missing VAR>-ray reflectivity and polarized neutron reflectivity(PNR) we observed two layer structures for the Co film grown by ED with asurface layer (thickness  100 AA) of reduced density ( 68% of bulk)compared to rest of the Co film (thickness  250 AA).
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 68, '%', 0]

Co
###Antiferromagnetic Coupling between Surface and Bulk Magnetization and Anomalous Magnetic Transport in Electro-deposited Co Film|Surendra Singh,C. L. Prajapat,D. Bhattacharya,S. K. Ghosh,M. R. Gonal,S. Basu###
(1501662, 1501662)
Using depth sensitive X<missing VAR>-ray reflectivity and polarized neutron reflectivity(PNR) we observed two layer structures for the Co film grown by ED with asurface layer (thickness  100 AA) of reduced density ( 68% of bulk)compared to rest of the Co film (thickness  250 AA).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 68, '%', 0]

Co
###Antiferromagnetic Coupling between Surface and Bulk Magnetization and Anomalous Magnetic Transport in Electro-deposited Co Film|Surendra Singh,C. L. Prajapat,D. Bhattacharya,S. K. Ghosh,M. R. Gonal,S. Basu###
(1501719, 1501719)
Using depth sensitive X<missing VAR>-ray reflectivity and polarized neutron reflectivity(PNR) we observed two layer structures for the Co film grown by ED with asurface layer (thickness  100 AA) of reduced density ( 68% of bulk)compared to rest of the Co film (thickness  250 AA).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 68, '%', 0]

F
###Antiferromagnetic Coupling between Surface and Bulk Magnetization and Anomalous Magnetic Transport in Electro-deposited Co Film|Surendra Singh,C. L. Prajapat,D. Bhattacharya,S. K. Ghosh,M. R. Gonal,S. Basu###
(1501768, 1501768)
 The two layerstructure is consistent with the histogram profile obtained from atomic forcemicroscope (AFM) of the film.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 68, '%', 1]

PN
###Antiferromagnetic Coupling between Surface and Bulk Magnetization and Anomalous Magnetic Transport in Electro-deposited Co Film|Surendra Singh,C. L. Prajapat,D. Bhattacharya,S. K. Ghosh,M. R. Gonal,S. Basu###
(1501784, 1501785)
 Interestingly, using PNR<missing VAR>, we found that themagnetization in the surface Co layer is inversely (antiferomagnetically)coupled (negative magnetization for surface Co layer) with the rest of the Colayer for the ED grown film.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 68, '%', 2]

Co
###Antiferromagnetic Coupling between Surface and Bulk Magnetization and Anomalous Magnetic Transport in Electro-deposited Co Film|Surendra Singh,C. L. Prajapat,D. Bhattacharya,S. K. Ghosh,M. R. Gonal,S. Basu###
(1501806, 1501806)
 Interestingly, using PNR<missing VAR>, we found that themagnetization in the surface Co layer is inversely (antiferomagnetically)coupled (negative magnetization for surface Co layer) with the rest of the Colayer for the ED grown film.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 68, '%', 2]

Co
###Antiferromagnetic Coupling between Surface and Bulk Magnetization and Anomalous Magnetic Transport in Electro-deposited Co Film|Surendra Singh,C. L. Prajapat,D. Bhattacharya,S. K. Ghosh,M. R. Gonal,S. Basu###
(1501830, 1501830)
 Interestingly, using PNR<missing VAR>, we found that themagnetization in the surface Co layer is inversely (antiferomagnetically)coupled (negative magnetization for surface Co layer) with the rest of the Colayer for the ED grown film.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 68, '%', 2]

Co
###Antiferromagnetic Coupling between Surface and Bulk Magnetization and Anomalous Magnetic Transport in Electro-deposited Co Film|Surendra Singh,C. L. Prajapat,D. Bhattacharya,S. K. Ghosh,M. R. Gonal,S. Basu###
(1501845, 1501845)
 Interestingly, using PNR<missing VAR>, we found that themagnetization in the surface Co layer is inversely (antiferomagnetically)coupled (negative magnetization for surface Co layer) with the rest of the Colayer for the ED grown film.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 68, '%', 2]

PN
###Antiferromagnetic Coupling between Surface and Bulk Magnetization and Anomalous Magnetic Transport in Electro-deposited Co Film|Surendra Singh,C. L. Prajapat,D. Bhattacharya,S. K. Ghosh,M. R. Gonal,S. Basu###
(1501868, 1501869)
 While we compare PNR<missing VAR> result for a Co film ofsimilar layered structure grown by sputtering, the film showed a uniformmagnetization as expected.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[168.0, 68, '%', 3]

Co
###Antiferromagnetic Coupling between Surface and Bulk Magnetization and Anomalous Magnetic Transport in Electro-deposited Co Film|Surendra Singh,C. L. Prajapat,D. Bhattacharya,S. K. Ghosh,M. R. Gonal,S. Basu###
(1501878, 1501878)
 While we compare PNR<missing VAR> result for a Co film ofsimilar layered structure grown by sputtering, the film showed a uniformmagnetization as expected.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 68, '%', 3]

Co
###Antiferromagnetic Coupling between Surface and Bulk Magnetization and Anomalous Magnetic Transport in Electro-deposited Co Film|Surendra Singh,C. L. Prajapat,D. Bhattacharya,S. K. Ghosh,M. R. Gonal,S. Basu###
(1501944, 1501944)
 We also show that the depth dependent unusualmagnetic behavior of ED grown Co film may be responsible for anomalousanisotropic magnetoresistance observed in low field in this film as compared tothe Co film grown by sputtering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[244.0, 68, '%', 4]

Co
###Antiferromagnetic Coupling between Surface and Bulk Magnetization and Anomalous Magnetic Transport in Electro-deposited Co Film|Surendra Singh,C. L. Prajapat,D. Bhattacharya,S. K. Ghosh,M. R. Gonal,S. Basu###
(1501986, 1501986)
 We also show that the depth dependent unusualmagnetic behavior of ED grown Co film may be responsible for anomalousanisotropic magnetoresistance observed in low field in this film as compared tothe Co film grown by sputtering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[286.0, 68, '%', 4]

F
###Antiferromagnetic Coupling between Surface and Bulk Magnetization and Anomalous Magnetic Transport in Electro-deposited Co Film|Surendra Singh,C. L. Prajapat,D. Bhattacharya,S. K. Ghosh,M. R. Gonal,S. Basu###
(1502007, 1502007)
 Combining X<missing VAR>-ray scattering, AFM<missing VAR>,superconducting quantum interface device magnetometry (SQ<missing VAR>UID), PNR<missing VAR> andmagneto-transport measurements we attempted to correlate and compare thestructural, magnetic and morphological properties with magneto-transport of Cofilms grown by ED and sputtering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[307.0, 68, '%', 5]

S
###Antiferromagnetic Coupling between Surface and Bulk Magnetization and Anomalous Magnetic Transport in Electro-deposited Co Film|Surendra Singh,C. L. Prajapat,D. Bhattacharya,S. K. Ghosh,M. R. Gonal,S. Basu###
(1502023, 1502023)
 Combining X<missing VAR>-ray scattering, AFM<missing VAR>,superconducting quantum interface device magnetometry (SQ<missing VAR>UID), PNR<missing VAR> andmagneto-transport measurements we attempted to correlate and compare thestructural, magnetic and morphological properties with magneto-transport of Cofilms grown by ED and sputtering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[323.0, 68, '%', 5]

UI
###Antiferromagnetic Coupling between Surface and Bulk Magnetization and Anomalous Magnetic Transport in Electro-deposited Co Film|Surendra Singh,C. L. Prajapat,D. Bhattacharya,S. K. Ghosh,M. R. Gonal,S. Basu###
(1502025, 1502026)
 Combining X<missing VAR>-ray scattering, AFM<missing VAR>,superconducting quantum interface device magnetometry (SQ<missing VAR>UID), PNR<missing VAR> andmagneto-transport measurements we attempted to correlate and compare thestructural, magnetic and morphological properties with magneto-transport of Cofilms grown by ED and sputtering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
[325.0, 68, '%', 5]

PN
###Antiferromagnetic Coupling between Surface and Bulk Magnetization and Anomalous Magnetic Transport in Electro-deposited Co Film|Surendra Singh,C. L. Prajapat,D. Bhattacharya,S. K. Ghosh,M. R. Gonal,S. Basu###
(1502031, 1502032)
 Combining X<missing VAR>-ray scattering, AFM<missing VAR>,superconducting quantum interface device magnetometry (SQ<missing VAR>UID), PNR<missing VAR> andmagneto-transport measurements we attempted to correlate and compare thestructural, magnetic and morphological properties with magneto-transport of Cofilms grown by ED and sputtering.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[331.0, 68, '%', 5]

Co
###Antiferromagnetic Coupling between Surface and Bulk Magnetization and Anomalous Magnetic Transport in Electro-deposited Co Film|Surendra Singh,C. L. Prajapat,D. Bhattacharya,S. K. Ghosh,M. R. Gonal,S. Basu###
(1502078, 1502078)
 Combining X<missing VAR>-ray scattering, AFM<missing VAR>,superconducting quantum interface device magnetometry (SQ<missing VAR>UID), PNR<missing VAR> andmagneto-transport measurements we attempted to correlate and compare thestructural, magnetic and morphological properties with magneto-transport of Cofilms grown by ED and sputtering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[378.0, 68, '%', 5]

GdPtBi
###The chiral anomaly and thermopower of Weyl fermions in the half-Heusler GdPtBi|Max Hirschberger,Satya Kushwaha,Zhijun Wang,Quinn Gibson,Carina A. Belvin,B. A. Bernevig,R. J. Cava,N. P. Ong###
(1502179, 1502181)
The chiral anomaly and thermopower of Weyl fermions in the half-Heusler GdPtBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Na3Bi
###The chiral anomaly and thermopower of Weyl fermions in the half-Heusler GdPtBi|Max Hirschberger,Satya Kushwaha,Zhijun Wang,Quinn Gibson,Carina A. Belvin,B. A. Bernevig,R. J. Cava,N. P. Ong###
(1502285, 1502287)
 Thechiral anomalyciteAdler,Bell, predicted to occur in both systems, wasrecently observed as a negative longitudinal magnetoresistance (LMR) inNa3Bi and in TaAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TaAs
###The chiral anomaly and thermopower of Weyl fermions in the half-Heusler GdPtBi|Max Hirschberger,Satya Kushwaha,Zhijun Wang,Quinn Gibson,Carina A. Belvin,B. A. Bernevig,R. J. Cava,N. P. Ong###
(1502293, 1502294)
 Thechiral anomalyciteAdler,Bell, predicted to occur in both systems, wasrecently observed as a negative longitudinal magnetoresistance (LMR) inNa3Bi and in TaAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GdPtBi
###The chiral anomaly and thermopower of Weyl fermions in the half-Heusler GdPtBi|Max Hirschberger,Satya Kushwaha,Zhijun Wang,Quinn Gibson,Carina A. Belvin,B. A. Bernevig,R. J. Cava,N. P. Ong###
(1502350, 1502352)
 We report evidence for the chiral anomaly in thehalf-Heusler GdPtBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###The chiral anomaly and thermopower of Weyl fermions in the half-Heusler GdPtBi|Max Hirschberger,Satya Kushwaha,Zhijun Wang,Quinn Gibson,Carina A. Belvin,B. A. Bernevig,R. J. Cava,N. P. Ong###
(1502355, 1502355)
 In zero field, GdPtBi is a zero-gap semiconductor withquadratic bands.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GdPtBi
###The chiral anomaly and thermopower of Weyl fermions in the half-Heusler GdPtBi|Max Hirschberger,Satya Kushwaha,Zhijun Wang,Quinn Gibson,Carina A. Belvin,B. A. Bernevig,R. J. Cava,N. P. Ong###
(1502362, 1502364)
 In zero field, GdPtBi is a zero-gap semiconductor withquadratic bands.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###The chiral anomaly and thermopower of Weyl fermions in the half-Heusler GdPtBi|Max Hirschberger,Satya Kushwaha,Zhijun Wang,Quinn Gibson,Carina A. Belvin,B. A. Bernevig,R. J. Cava,N. P. Ong###
(1502384, 1502384)
 In a magnetic field, the Zeeman energy leads to Weyl nodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Interference Evidence for Rashba-Type Spin-Split on Semimetallic WTe2 Surface|Qing Li,Jiaqiang Yan,Biao Yang,Yunyi Zang,Junjie Zhang,Ke He,Menghao Wu,Yanfei Zhao,David Mandrus,Jian Wang,Qikun Xue,Lifeng Chi,David J. Singh,Minghu Pan###
(1502575, 1502577)
Interference Evidence for Rashba-Type Spin-Split on Semimetallic WTe2 Surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[384.0, 4.2, 'K', 7],[407.0, 77, 'K', 8]

(WTe2)
###Interference Evidence for Rashba-Type Spin-Split on Semimetallic WTe2 Surface|Qing Li,Jiaqiang Yan,Biao Yang,Yunyi Zang,Junjie Zhang,Ke He,Menghao Wu,Yanfei Zhao,David Mandrus,Jian Wang,Qikun Xue,Lifeng Chi,David J. Singh,Minghu Pan###
(1502588, 1502592)
 Semimetallic tungsten ditelluride (WTe2) displays an extremely largenon-saturating magnetoresistance (XMR), which is the subject of intenseinterest.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[369.0, 4.2, 'K', 6],[392.0, 77, 'K', 7]

WTe2
###Interference Evidence for Rashba-Type Spin-Split on Semimetallic WTe2 Surface|Qing Li,Jiaqiang Yan,Biao Yang,Yunyi Zang,Junjie Zhang,Ke He,Menghao Wu,Yanfei Zhao,David Mandrus,Jian Wang,Qikun Xue,Lifeng Chi,David J. Singh,Minghu Pan###
(1502673, 1502675)
 This phenomenon is thought to arise from the combination of perfectn-p charge compensation with low carrier densities in WTe2 and presumablydetails of its band structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[286.0, 4.2, 'K', 5],[309.0, 77, 'K', 6]

(SOC)
###Interference Evidence for Rashba-Type Spin-Split on Semimetallic WTe2 Surface|Qing Li,Jiaqiang Yan,Biao Yang,Yunyi Zang,Junjie Zhang,Ke He,Menghao Wu,Yanfei Zhao,David Mandrus,Jian Wang,Qikun Xue,Lifeng Chi,David J. Singh,Minghu Pan###
(1502713, 1502717)
 Recently, spin texture induced by strongspin-orbital coupling (SOC) has been observed in WTe2 by angle-resolvedphotoemission spectroscopy (ARPES).
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[244.0, 4.2, 'K', 4],[267.0, 77, 'K', 5]

WTe2
###Interference Evidence for Rashba-Type Spin-Split on Semimetallic WTe2 Surface|Qing Li,Jiaqiang Yan,Biao Yang,Yunyi Zang,Junjie Zhang,Ke He,Menghao Wu,Yanfei Zhao,David Mandrus,Jian Wang,Qikun Xue,Lifeng Chi,David J. Singh,Minghu Pan###
(1502727, 1502729)
 Recently, spin texture induced by strongspin-orbital coupling (SOC) has been observed in WTe2 by angle-resolvedphotoemission spectroscopy (ARPES).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[232.0, 4.2, 'K', 4],[255.0, 77, 'K', 5]

S
###Interference Evidence for Rashba-Type Spin-Split on Semimetallic WTe2 Surface|Qing Li,Jiaqiang Yan,Biao Yang,Yunyi Zang,Junjie Zhang,Ke He,Menghao Wu,Yanfei Zhao,David Mandrus,Jian Wang,Qikun Xue,Lifeng Chi,David J. Singh,Minghu Pan###
(1502747, 1502747)
 Recently, spin texture induced by strongspin-orbital coupling (SOC) has been observed in WTe2 by angle-resolvedphotoemission spectroscopy (ARPES).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[214.0, 4.2, 'K', 4],[237.0, 77, 'K', 5]

WTe2
###Interference Evidence for Rashba-Type Spin-Split on Semimetallic WTe2 Surface|Qing Li,Jiaqiang Yan,Biao Yang,Yunyi Zang,Junjie Zhang,Ke He,Menghao Wu,Yanfei Zhao,David Mandrus,Jian Wang,Qikun Xue,Lifeng Chi,David J. Singh,Minghu Pan###
(1502803, 1502805)
 This provides a mechanism for protectingbackscattering for the states involved and thus was proposed to play animportant role in the XMR of WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 4.2, 'K', 3],[179.0, 77, 'K', 4]

WTe2
###Interference Evidence for Rashba-Type Spin-Split on Semimetallic WTe2 Surface|Qing Li,Jiaqiang Yan,Biao Yang,Yunyi Zang,Junjie Zhang,Ke He,Menghao Wu,Yanfei Zhao,David Mandrus,Jian Wang,Qikun Xue,Lifeng Chi,David J. Singh,Minghu Pan###
(1502828, 1502830)
 Here, based on our density functionalcalculations for bulk WTe2, we found a strong Rashba spin-orbit effect in thecalculated band structure due to its non-centrosymmetric structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 4.2, 'K', 2],[154.0, 77, 'K', 3]

S
###Interference Evidence for Rashba-Type Spin-Split on Semimetallic WTe2 Surface|Qing Li,Jiaqiang Yan,Biao Yang,Yunyi Zang,Junjie Zhang,Ke He,Menghao Wu,Yanfei Zhao,David Mandrus,Jian Wang,Qikun Xue,Lifeng Chi,David J. Singh,Minghu Pan###
(1502944, 1502944)
 A prominent Umklappinterference pattern (a spectroscopic feature with involving reciprocal latticevectors) can be observed by scanning tunneling microscopic (STM) measurementson WTe2 surface at 4.2 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 4.2, 'K', 0],[40.0, 77, 'K', 1]

WTe2
###Interference Evidence for Rashba-Type Spin-Split on Semimetallic WTe2 Surface|Qing Li,Jiaqiang Yan,Biao Yang,Yunyi Zang,Junjie Zhang,Ke He,Menghao Wu,Yanfei Zhao,David Mandrus,Jian Wang,Qikun Xue,Lifeng Chi,David J. Singh,Minghu Pan###
(1502954, 1502956)
 A prominent Umklappinterference pattern (a spectroscopic feature with involving reciprocal latticevectors) can be observed by scanning tunneling microscopic (STM) measurementson WTe2 surface at 4.2 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 4.2, 'K', 0],[28.0, 77, 'K', 1]

S
###Interference Evidence for Rashba-Type Spin-Split on Semimetallic WTe2 Surface|Qing Li,Jiaqiang Yan,Biao Yang,Yunyi Zang,Junjie Zhang,Ke He,Menghao Wu,Yanfei Zhao,David Mandrus,Jian Wang,Qikun Xue,Lifeng Chi,David J. Singh,Minghu Pan###
(1503024, 1503024)
 The energy dependence of Umklapp interferenceshows a strong correspondence with densities of states integrated from ARPESmeasurement, manifesting a fact that the bands are spin-split on the oppositesside of Gamma point.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 4.2, 'K', 2],[40.0, 77, 'K', 1]

WTe2
###Interference Evidence for Rashba-Type Spin-Split on Semimetallic WTe2 Surface|Qing Li,Jiaqiang Yan,Biao Yang,Yunyi Zang,Junjie Zhang,Ke He,Menghao Wu,Yanfei Zhao,David Mandrus,Jian Wang,Qikun Xue,Lifeng Chi,David J. Singh,Minghu Pan###
(1503121, 1503123)
 Spectroscopic survey reveals the ratio of electron/holeasymmetry changes alternately with lateral locations along b<missing VAR> axis, providing amicroscopic picture for double-carrier transport of semimetallic WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 4.2, 'K', 3],[137.0, 77, 'K', 2]

S
###Interference Evidence for Rashba-Type Spin-Split on Semimetallic WTe2 Surface|Qing Li,Jiaqiang Yan,Biao Yang,Yunyi Zang,Junjie Zhang,Ke He,Menghao Wu,Yanfei Zhao,David Mandrus,Jian Wang,Qikun Xue,Lifeng Chi,David J. Singh,Minghu Pan###
(1503155, 1503155)
 Thecalculated band structure and Fermi surface is further supported by our ARPESresults and Shubnikov-de Haas (SdH) oscillations measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[194.0, 4.2, 'K', 4],[171.0, 77, 'K', 3]

H
###Interference Evidence for Rashba-Type Spin-Split on Semimetallic WTe2 Surface|Qing Li,Jiaqiang Yan,Biao Yang,Yunyi Zang,Junjie Zhang,Ke He,Menghao Wu,Yanfei Zhao,David Mandrus,Jian Wang,Qikun Xue,Lifeng Chi,David J. Singh,Minghu Pan###
(1503170, 1503170)
 Thecalculated band structure and Fermi surface is further supported by our ARPESresults and Shubnikov-de Haas (SdH) oscillations measurements.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[209.0, 4.2, 'K', 4],[186.0, 77, 'K', 3]

Fe
###Enhanced tunneling magnetoresistance in Fe$\mid$ZnSe double junctions|J. Peralta-Ramos,A. M. Llois###
(1503194, 1503194)
Enhanced tunneling magnetoresistance in FemidZnSe double junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[280.0, 2, 'D', 4]

ZnSe
###Enhanced tunneling magnetoresistance in Fe$\mid$ZnSe double junctions|J. Peralta-Ramos,A. M. Llois###
(1503196, 1503197)
Enhanced tunneling magnetoresistance in FemidZnSe double junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[277.0, 2, 'D', 4]

Fe
###Enhanced tunneling magnetoresistance in Fe$\mid$ZnSe double junctions|J. Peralta-Ramos,A. M. Llois###
(1503223, 1503223)
 We calculate the tunneling magnetoresistance (TMR) ofFemidZnSemidFemidZnSemidFe (001) double magnetic tunnel junctionsas a function of the in-between Fe layers<missing VAR> thickness, and compare these resultswith those of FemidZnSemidFe simple junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[251.0, 2, 'D', 3]

ZnSe
###Enhanced tunneling magnetoresistance in Fe$\mid$ZnSe double junctions|J. Peralta-Ramos,A. M. Llois###
(1503225, 1503226)
 We calculate the tunneling magnetoresistance (TMR) ofFemidZnSemidFemidZnSemidFe (001) double magnetic tunnel junctionsas a function of the in-between Fe layers<missing VAR> thickness, and compare these resultswith those of FemidZnSemidFe simple junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[248.0, 2, 'D', 3]

Fe
###Enhanced tunneling magnetoresistance in Fe$\mid$ZnSe double junctions|J. Peralta-Ramos,A. M. Llois###
(1503228, 1503228)
 We calculate the tunneling magnetoresistance (TMR) ofFemidZnSemidFemidZnSemidFe (001) double magnetic tunnel junctionsas a function of the in-between Fe layers<missing VAR> thickness, and compare these resultswith those of FemidZnSemidFe simple junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[246.0, 2, 'D', 3]

ZnSe
###Enhanced tunneling magnetoresistance in Fe$\mid$ZnSe double junctions|J. Peralta-Ramos,A. M. Llois###
(1503230, 1503231)
 We calculate the tunneling magnetoresistance (TMR) ofFemidZnSemidFemidZnSemidFe (001) double magnetic tunnel junctionsas a function of the in-between Fe layers<missing VAR> thickness, and compare these resultswith those of FemidZnSemidFe simple junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[243.0, 2, 'D', 3]

Fe
###Enhanced tunneling magnetoresistance in Fe$\mid$ZnSe double junctions|J. Peralta-Ramos,A. M. Llois###
(1503233, 1503233)
 We calculate the tunneling magnetoresistance (TMR) ofFemidZnSemidFemidZnSemidFe (001) double magnetic tunnel junctionsas a function of the in-between Fe layers<missing VAR> thickness, and compare these resultswith those of FemidZnSemidFe simple junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[241.0, 2, 'D', 3]

Fe
###Enhanced tunneling magnetoresistance in Fe$\mid$ZnSe double junctions|J. Peralta-Ramos,A. M. Llois###
(1503262, 1503262)
 We calculate the tunneling magnetoresistance (TMR) ofFemidZnSemidFemidZnSemidFe (001) double magnetic tunnel junctionsas a function of the in-between Fe layers<missing VAR> thickness, and compare these resultswith those of FemidZnSemidFe simple junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[212.0, 2, 'D', 3]

Fe
###Enhanced tunneling magnetoresistance in Fe$\mid$ZnSe double junctions|J. Peralta-Ramos,A. M. Llois###
(1503285, 1503285)
 We calculate the tunneling magnetoresistance (TMR) ofFemidZnSemidFemidZnSemidFe (001) double magnetic tunnel junctionsas a function of the in-between Fe layers<missing VAR> thickness, and compare these resultswith those of FemidZnSemidFe simple junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[189.0, 2, 'D', 3]

ZnSe
###Enhanced tunneling magnetoresistance in Fe$\mid$ZnSe double junctions|J. Peralta-Ramos,A. M. Llois###
(1503287, 1503288)
 We calculate the tunneling magnetoresistance (TMR) ofFemidZnSemidFemidZnSemidFe (001) double magnetic tunnel junctionsas a function of the in-between Fe layers<missing VAR> thickness, and compare these resultswith those of FemidZnSemidFe simple junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, 2, 'D', 3]

Fe
###Enhanced tunneling magnetoresistance in Fe$\mid$ZnSe double junctions|J. Peralta-Ramos,A. M. Llois###
(1503290, 1503290)
 We calculate the tunneling magnetoresistance (TMR) ofFemidZnSemidFemidZnSemidFe (001) double magnetic tunnel junctionsas a function of the in-between Fe layers<missing VAR> thickness, and compare these resultswith those of FemidZnSemidFe simple junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[184.0, 2, 'D', 3]

Fe
###Enhanced tunneling magnetoresistance in Fe$\mid$ZnSe double junctions|J. Peralta-Ramos,A. M. Llois###
(1503409, 1503409)
 We find that theconductances for each spin channel and the TMR strongly depend on thein-between Fe layers<missing VAR> thickness, and that in some cases they are enhanced withrespect to simple junctions, in qualitative agreement with recent experimentalstudies performed on similar systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 2, 'D', 1]

In
###Modelling Electron Spin Accumulation in a Metallic Nanoparticle|Y. G. Wei,C. E. Malec,D. Davidović###
(1503671, 1503671)
  In absence of spin-relaxation, the model leads to a spin-accumulation in thenanoparticle, a difference (Deltamu) between the chemical potentials ofspin-up and spin-down electrons, proportional to the current and the Jullieres<missing VAR>tunnel magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[298.0, 1.6, 'MHz', 3]

(V)
###Modelling Electron Spin Accumulation in a Metallic Nanoparticle|Y. G. Wei,C. E. Malec,D. Davidović###
(1503800, 1503802)
 Taking into account an energy dependentspin-relaxation rate Omega (omega), Deltamu as a function of biasvoltage (V) exhibits a crossover from linear to a much weaker dependence,when e<missing VAR>Omega (Deltamu) equals the spin-polarized current through thenanoparticle.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 1.6, 'MHz', 2]

V1
###Modelling Electron Spin Accumulation in a Metallic Nanoparticle|Y. G. Wei,C. E. Malec,D. Davidović###
(1503905, 1503906)
 Assuming that the spin-relaxation takes place via electron-phononemission and Elliot-Yafet mechanism, the model leads to a crossover from linearto V1/5 dependence.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 1.6, 'MHz', 1]

V
###Modelling Electron Spin Accumulation in a Metallic Nanoparticle|Y. G. Wei,C. E. Malec,D. Davidović###
(1503942, 1503942)
 The crossover explains recent measurements of thesaturation of the spin-polarized current with V in Aluminum nanoparticles,and leads to the spin-relaxation rate of approx 1.6 MHz in an Aluminumnanoparticle of diameter 6nm, for a transition with an energy difference ofone level spacing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 1.6, 'MHz', 0]

As
###Transport and infrared properties of SmFeAs(O1-xFx): from SDW to superconducting ordering|M. Tropeano,C. Fanciulli,C. Ferdeghini,D. Marre',A. S. Siri,M. Putti,A. Martinelli,M. Ferretti,A. Palenzona,M. R. Cimberle,C. Mirri,S. Lupi,R. Sopracase,P. Calvani,A. Perucchi###
(1504032, 1504032)
Transport and infrared properties of SmFeAs(O1-xFx) from SD<missing VAR>W to superconducting ordering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O1-x
###Transport and infrared properties of SmFeAs(O1-xFx): from SDW to superconducting ordering|M. Tropeano,C. Fanciulli,C. Ferdeghini,D. Marre',A. S. Siri,M. Putti,A. Martinelli,M. Ferretti,A. Palenzona,M. R. Cimberle,C. Mirri,S. Lupi,R. Sopracase,P. Calvani,A. Perucchi###
(1504034, 1504037)
Transport and infrared properties of SmFeAs(O1-xFx) from SD<missing VAR>W to superconducting ordering.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

S
###Transport and infrared properties of SmFeAs(O1-xFx): from SDW to superconducting ordering|M. Tropeano,C. Fanciulli,C. Ferdeghini,D. Marre',A. S. Siri,M. Putti,A. Martinelli,M. Ferretti,A. Palenzona,M. R. Cimberle,C. Mirri,S. Lupi,R. Sopracase,P. Calvani,A. Perucchi###
(1504043, 1504043)
Transport and infrared properties of SmFeAs(O1-xFx) from SD<missing VAR>W to superconducting ordering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Transport and infrared properties of SmFeAs(O1-xFx): from SDW to superconducting ordering|M. Tropeano,C. Fanciulli,C. Ferdeghini,D. Marre',A. S. Siri,M. Putti,A. Martinelli,M. Ferretti,A. Palenzona,M. R. Cimberle,C. Mirri,S. Lupi,R. Sopracase,P. Calvani,A. Perucchi###
(1504045, 1504045)
Transport and infrared properties of SmFeAs(O1-xFx) from SD<missing VAR>W to superconducting ordering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SmFeAsO
###Transport and infrared properties of SmFeAs(O1-xFx): from SDW to superconducting ordering|M. Tropeano,C. Fanciulli,C. Ferdeghini,D. Marre',A. S. Siri,M. Putti,A. Martinelli,M. Ferretti,A. Palenzona,M. R. Cimberle,C. Mirri,S. Lupi,R. Sopracase,P. Calvani,A. Perucchi###
(1504087, 1504090)
 We report measurements of resistivity, magnetoresistivity, Hall effect,Seebeck coefficient, infrared reflectivity of undoped SmFeAsO and lightly dopedSmFeAs(O0.93F0.07) oxypnictides.
Featurization terminated normally.
0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SmFeAs(O0.93F0.07)
###Transport and infrared properties of SmFeAs(O1-xFx): from SDW to superconducting ordering|M. Tropeano,C. Fanciulli,C. Ferdeghini,D. Marre',A. S. Siri,M. Putti,A. Martinelli,M. Ferretti,A. Palenzona,M. R. Cimberle,C. Mirri,S. Lupi,R. Sopracase,P. Calvani,A. Perucchi###
(1504099, 1504107)
 We report measurements of resistivity, magnetoresistivity, Hall effect,Seebeck coefficient, infrared reflectivity of undoped SmFeAsO and lightly dopedSmFeAs(O0.93F0.07) oxypnictides.
Featurization terminated normally.
0,0,0,0,0,0,0,0.2325,0.0175,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SmFeAsO
###Transport and infrared properties of SmFeAs(O1-xFx): from SDW to superconducting ordering|M. Tropeano,C. Fanciulli,C. Ferdeghini,D. Marre',A. S. Siri,M. Putti,A. Martinelli,M. Ferretti,A. Palenzona,M. R. Cimberle,C. Mirri,S. Lupi,R. Sopracase,P. Calvani,A. Perucchi###
(1504122, 1504125)
 All the properties measured on SmFeAsO arecharacterized by clear signatures of the magnetic instability.
Featurization terminated normally.
0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Transport and infrared properties of SmFeAs(O1-xFx): from SDW to superconducting ordering|M. Tropeano,C. Fanciulli,C. Ferdeghini,D. Marre',A. S. Siri,M. Putti,A. Martinelli,M. Ferretti,A. Palenzona,M. R. Cimberle,C. Mirri,S. Lupi,R. Sopracase,P. Calvani,A. Perucchi###
(1504194, 1504194)
 Aself-consistent picture emerges in which below the magnetic transition carriercondensation occurs due to the opening of spin density wave (SD<missing VAR>W) gap.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Transport and infrared properties of SmFeAs(O1-xFx): from SDW to superconducting ordering|M. Tropeano,C. Fanciulli,C. Ferdeghini,D. Marre',A. S. Siri,M. Putti,A. Martinelli,M. Ferretti,A. Palenzona,M. R. Cimberle,C. Mirri,S. Lupi,R. Sopracase,P. Calvani,A. Perucchi###
(1504196, 1504196)
 Aself-consistent picture emerges in which below the magnetic transition carriercondensation occurs due to the opening of spin density wave (SD<missing VAR>W) gap.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SmFeAs(O0.93F0.07)
###Transport and infrared properties of SmFeAs(O1-xFx): from SDW to superconducting ordering|M. Tropeano,C. Fanciulli,C. Ferdeghini,D. Marre',A. S. Siri,M. Putti,A. Martinelli,M. Ferretti,A. Palenzona,M. R. Cimberle,C. Mirri,S. Lupi,R. Sopracase,P. Calvani,A. Perucchi###
(1504243, 1504251)
 SmFeAs(O0.93F0.07) exhibits anincrease of the metallic character on cooling consistent with electron doping,even though at room temperature values of all the properties nearly overlapswith those of SmFeAsO.
Featurization terminated normally.
0,0,0,0,0,0,0,0.2325,0.0175,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SmFeAsO
###Transport and infrared properties of SmFeAs(O1-xFx): from SDW to superconducting ordering|M. Tropeano,C. Fanciulli,C. Ferdeghini,D. Marre',A. S. Siri,M. Putti,A. Martinelli,M. Ferretti,A. Palenzona,M. R. Cimberle,C. Mirri,S. Lupi,R. Sopracase,P. Calvani,A. Perucchi###
(1504313, 1504316)
 SmFeAs(O0.93F0.07) exhibits anincrease of the metallic character on cooling consistent with electron doping,even though at room temperature values of all the properties nearly overlapswith those of SmFeAsO.
Featurization terminated normally.
0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Transport and infrared properties of SmFeAs(O1-xFx): from SDW to superconducting ordering|M. Tropeano,C. Fanciulli,C. Ferdeghini,D. Marre',A. S. Siri,M. Putti,A. Martinelli,M. Ferretti,A. Palenzona,M. R. Cimberle,C. Mirri,S. Lupi,R. Sopracase,P. Calvani,A. Perucchi###
(1504339, 1504339)
 However, with temperature decrease all anomalies relatedto the SD<missing VAR>W instability are missed and the superconducting transition occurs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Transport and infrared properties of SmFeAs(O1-xFx): from SDW to superconducting ordering|M. Tropeano,C. Fanciulli,C. Ferdeghini,D. Marre',A. S. Siri,M. Putti,A. Martinelli,M. Ferretti,A. Palenzona,M. R. Cimberle,C. Mirri,S. Lupi,R. Sopracase,P. Calvani,A. Perucchi###
(1504341, 1504341)
 However, with temperature decrease all anomalies relatedto the SD<missing VAR>W instability are missed and the superconducting transition occurs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Transport and infrared properties of SmFeAs(O1-xFx): from SDW to superconducting ordering|M. Tropeano,C. Fanciulli,C. Ferdeghini,D. Marre',A. S. Siri,M. Putti,A. Martinelli,M. Ferretti,A. Palenzona,M. R. Cimberle,C. Mirri,S. Lupi,R. Sopracase,P. Calvani,A. Perucchi###
(1504390, 1504390)
This suggests that doping breaks abruptly the symmetries of the Fermi surfaceinhibiting the SD<missing VAR>W formation in favor of the superconducting transition, withno substantial changes in the density of states or in the effective mass.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Transport and infrared properties of SmFeAs(O1-xFx): from SDW to superconducting ordering|M. Tropeano,C. Fanciulli,C. Ferdeghini,D. Marre',A. S. Siri,M. Putti,A. Martinelli,M. Ferretti,A. Palenzona,M. R. Cimberle,C. Mirri,S. Lupi,R. Sopracase,P. Calvani,A. Perucchi###
(1504392, 1504392)
This suggests that doping breaks abruptly the symmetries of the Fermi surfaceinhibiting the SD<missing VAR>W formation in favor of the superconducting transition, withno substantial changes in the density of states or in the effective mass.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La
###139La NMR evidence for phase solitons in the ground state of overdoped manganites|D. Koumoulis,N. Panopoulos,A. Reyes,M. Fardis,M. Pissas,A. Douvalis,T. Bakas,D. Argyriou,G. Papavassiliou###
(1504448, 1504448)
139La NMR evidence for phase solitons in the ground state of overdoped manganites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[392.0, 2, ',', 6],[438.0, 139, 'La', 8]

N
###139La NMR evidence for phase solitons in the ground state of overdoped manganites|D. Koumoulis,N. Panopoulos,A. Reyes,M. Fardis,M. Pissas,A. Douvalis,T. Bakas,D. Argyriou,G. Papavassiliou###
(1504450, 1504450)
139La NMR evidence for phase solitons in the ground state of overdoped manganites.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[390.0, 2, ',', 6],[436.0, 139, 'La', 8]

F
###139La NMR evidence for phase solitons in the ground state of overdoped manganites|D. Koumoulis,N. Panopoulos,A. Reyes,M. Fardis,M. Pissas,A. Douvalis,T. Bakas,D. Argyriou,G. Papavassiliou###
(1504638, 1504638)
 Experiments have shown that byadding holes the insulating phase breaks into antiferromagnetic (AFM) regions,which are separated by hole rich clumps (stripes) with a rapid change of thephase of the background spins and orbitals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[202.0, 2, ',', 3],[248.0, 139, 'La', 5]

Ca
###139La NMR evidence for phase solitons in the ground state of overdoped manganites|D. Koumoulis,N. Panopoulos,A. Reyes,M. Fardis,M. Pissas,A. Douvalis,T. Bakas,D. Argyriou,G. Papavassiliou###
(1504716, 1504716)
 However, recent experiments inoverdoped manganites of the La(1-x)Ca(x)MnO(3) (LCMO) family have shown thatinstead of charge stripes, charge in these systems is organized in a uniformcharge density wave (CD<missing VAR>W).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 2, ',', 2],[170.0, 139, 'La', 4]

O
###139La NMR evidence for phase solitons in the ground state of overdoped manganites|D. Koumoulis,N. Panopoulos,A. Reyes,M. Fardis,M. Pissas,A. Douvalis,T. Bakas,D. Argyriou,G. Papavassiliou###
(1504730, 1504730)
 However, recent experiments inoverdoped manganites of the La(1-x)Ca(x)MnO(3) (LCMO) family have shown thatinstead of charge stripes, charge in these systems is organized in a uniformcharge density wave (CD<missing VAR>W).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 2, ',', 2],[156.0, 139, 'La', 4]

C
###139La NMR evidence for phase solitons in the ground state of overdoped manganites|D. Koumoulis,N. Panopoulos,A. Reyes,M. Fardis,M. Pissas,A. Douvalis,T. Bakas,D. Argyriou,G. Papavassiliou###
(1504777, 1504777)
 However, recent experiments inoverdoped manganites of the La(1-x)Ca(x)MnO(3) (LCMO) family have shown thatinstead of charge stripes, charge in these systems is organized in a uniformcharge density wave (CD<missing VAR>W).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 2, ',', 2],[109.0, 139, 'La', 4]

W
###139La NMR evidence for phase solitons in the ground state of overdoped manganites|D. Koumoulis,N. Panopoulos,A. Reyes,M. Fardis,M. Pissas,A. Douvalis,T. Bakas,D. Argyriou,G. Papavassiliou###
(1504779, 1504779)
 However, recent experiments inoverdoped manganites of the La(1-x)Ca(x)MnO(3) (LCMO) family have shown thatinstead of charge stripes, charge in these systems is organized in a uniformcharge density wave (CD<missing VAR>W).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 2, ',', 2],[107.0, 139, 'La', 4]

N
###139La NMR evidence for phase solitons in the ground state of overdoped manganites|D. Koumoulis,N. Panopoulos,A. Reyes,M. Fardis,M. Pissas,A. Douvalis,T. Bakas,D. Argyriou,G. Papavassiliou###
(1504895, 1504895)
 Here, byusing 139La Nuclear Magnetic Resonance (NMR) we provide direct evidence thatthe ground state of overdoped LCMO is indeed solitonic.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 2, ',', 2],[9.0, 139, 'La', 0]

O
###139La NMR evidence for phase solitons in the ground state of overdoped manganites|D. Koumoulis,N. Panopoulos,A. Reyes,M. Fardis,M. Pissas,A. Douvalis,T. Bakas,D. Argyriou,G. Papavassiliou###
(1504924, 1504924)
 Here, byusing 139La Nuclear Magnetic Resonance (NMR) we provide direct evidence thatthe ground state of overdoped LCMO is indeed solitonic.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 2, ',', 2],[38.0, 139, 'La', 0]

N
###139La NMR evidence for phase solitons in the ground state of overdoped manganites|D. Koumoulis,N. Panopoulos,A. Reyes,M. Fardis,M. Pissas,A. Douvalis,T. Bakas,D. Argyriou,G. Papavassiliou###
(1504944, 1504944)
 By lowering temperaturethe narrow NMR spectra observed in the AFM<missing VAR> phase are shown to wipe out, whilefor T<missing VAR><30K a very broad spectrum reappears, characteristic of an incommensurate(IC) charge and spin modulation.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 2, ',', 3],[58.0, 139, 'La', 1]

F
###139La NMR evidence for phase solitons in the ground state of overdoped manganites|D. Koumoulis,N. Panopoulos,A. Reyes,M. Fardis,M. Pissas,A. Douvalis,T. Bakas,D. Argyriou,G. Papavassiliou###
(1504957, 1504957)
 By lowering temperaturethe narrow NMR spectra observed in the AFM<missing VAR> phase are shown to wipe out, whilefor T<missing VAR><30K a very broad spectrum reappears, characteristic of an incommensurate(IC) charge and spin modulation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 2, ',', 3],[71.0, 139, 'La', 1]

K
###139La NMR evidence for phase solitons in the ground state of overdoped manganites|D. Koumoulis,N. Panopoulos,A. Reyes,M. Fardis,M. Pissas,A. Douvalis,T. Bakas,D. Argyriou,G. Papavassiliou###
(1504981, 1504981)
 By lowering temperaturethe narrow NMR spectra observed in the AFM<missing VAR> phase are shown to wipe out, whilefor T<missing VAR><30K a very broad spectrum reappears, characteristic of an incommensurate(IC) charge and spin modulation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 2, ',', 3],[95.0, 139, 'La', 1]

(IC)
###139La NMR evidence for phase solitons in the ground state of overdoped manganites|D. Koumoulis,N. Panopoulos,A. Reyes,M. Fardis,M. Pissas,A. Douvalis,T. Bakas,D. Argyriou,G. Papavassiliou###
(1505003, 1505006)
 By lowering temperaturethe narrow NMR spectra observed in the AFM<missing VAR> phase are shown to wipe out, whilefor T<missing VAR><30K a very broad spectrum reappears, characteristic of an incommensurate(IC) charge and spin modulation.
Featurization successful!
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 2, ',', 3],[117.0, 139, 'La', 1]

IC
###139La NMR evidence for phase solitons in the ground state of overdoped manganites|D. Koumoulis,N. Panopoulos,A. Reyes,M. Fardis,M. Pissas,A. Douvalis,T. Bakas,D. Argyriou,G. Papavassiliou###
(1505046, 1505047)
 Remarkably, by further decreasing temperature,a relatively narrow feature emerges from the broad IC NMR signal, manifestingthe formation of a solitonic modulation as T<missing VAR>->0.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[206.0, 2, ',', 4],[160.0, 139, 'La', 2]

N
###139La NMR evidence for phase solitons in the ground state of overdoped manganites|D. Koumoulis,N. Panopoulos,A. Reyes,M. Fardis,M. Pissas,A. Douvalis,T. Bakas,D. Argyriou,G. Papavassiliou###
(1505049, 1505049)
 Remarkably, by further decreasing temperature,a relatively narrow feature emerges from the broad IC NMR signal, manifestingthe formation of a solitonic modulation as T<missing VAR>->0.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[209.0, 2, ',', 4],[163.0, 139, 'La', 2]

La1.2Sr1.8Mn2O7
###Signature of checkerboard fluctuations in the phonon spectra of a possible polaronic metal La1.2Sr1.8Mn2O7|F. Weber,N. Aliouane,H. Zheng,J. F. Mitchell,D. N. Argyriou,D. Reznik###
(1505113, 1505120)
Signature of checkerboard fluctuations in the phonon spectra of a possible polaronic metal La1.2Sr1.8Mn2O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.09999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La2
###Signature of checkerboard fluctuations in the phonon spectra of a possible polaronic metal La1.2Sr1.8Mn2O7|F. Weber,N. Aliouane,H. Zheng,J. F. Mitchell,D. N. Argyriou,D. Reznik###
(1505273, 1505274)
 However, photoemission measurements recently found a polaronicpseudogap, in a metallic phase of La2-2x<missing VAR>Sr12x<missing VAR>Mn2O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr12
###Signature of checkerboard fluctuations in the phonon spectra of a possible polaronic metal La1.2Sr1.8Mn2O7|F. Weber,N. Aliouane,H. Zheng,J. F. Mitchell,D. N. Argyriou,D. Reznik###
(1505278, 1505280)
 However, photoemission measurements recently found a polaronicpseudogap, in a metallic phase of La2-2x<missing VAR>Sr12x<missing VAR>Mn2O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn2O7
###Signature of checkerboard fluctuations in the phonon spectra of a possible polaronic metal La1.2Sr1.8Mn2O7|F. Weber,N. Aliouane,H. Zheng,J. F. Mitchell,D. N. Argyriou,D. Reznik###
(1505282, 1505285)
 However, photoemission measurements recently found a polaronicpseudogap, in a metallic phase of La2-2x<missing VAR>Sr12x<missing VAR>Mn2O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0.7777777777777778,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Signature of checkerboard fluctuations in the phonon spectra of a possible polaronic metal La1.2Sr1.8Mn2O7|F. Weber,N. Aliouane,H. Zheng,J. F. Mitchell,D. N. Argyriou,D. Reznik###
(1505306, 1505306)
 This layered manganite isfamous for colossal magnetoresistance (CMR) associated with a phase transitionfrom this low-temperature metallic phase to a high temperature insulatingphase.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La2
###Signature of checkerboard fluctuations in the phonon spectra of a possible polaronic metal La1.2Sr1.8Mn2O7|F. Weber,N. Aliouane,H. Zheng,J. F. Mitchell,D. N. Argyriou,D. Reznik###
(1505391, 1505392)
 Broad charge order peaks due to large polarons observed by neutron andx<missing VAR>-ray scattering in the insulating phase disappear when La2-2x<missing VAR>Sr12x<missing VAR>Mn2O7becomes metallic.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr12
###Signature of checkerboard fluctuations in the phonon spectra of a possible polaronic metal La1.2Sr1.8Mn2O7|F. Weber,N. Aliouane,H. Zheng,J. F. Mitchell,D. N. Argyriou,D. Reznik###
(1505396, 1505398)
 Broad charge order peaks due to large polarons observed by neutron andx<missing VAR>-ray scattering in the insulating phase disappear when La2-2x<missing VAR>Sr12x<missing VAR>Mn2O7becomes metallic.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn2O7
###Signature of checkerboard fluctuations in the phonon spectra of a possible polaronic metal La1.2Sr1.8Mn2O7|F. Weber,N. Aliouane,H. Zheng,J. F. Mitchell,D. N. Argyriou,D. Reznik###
(1505400, 1505403)
 Broad charge order peaks due to large polarons observed by neutron andx<missing VAR>-ray scattering in the insulating phase disappear when La2-2x<missing VAR>Sr12x<missing VAR>Mn2O7becomes metallic.
Featurization terminated normally.
0,0,0,0,0,0,0,0.7777777777777778,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Structure and giant magnetoresistance of granular Co-Cu nanolayers prepared by cross-beam PLD|A. Jesche,A. Gorbunoff,A. Mensch,H. Stöcker,A. A. Levin,D. C. Meyer###
(1505600, 1505600)
Structure and giant magnetoresistance of granular Co-Cu nanolayers prepared by cross-beam PLD.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 0, ',', 1],[43.0, 75, ',', 2],[59.0, 13, 'nm', 2],[62.0, 55, 'nm', 2],[159.0, 10, 'nm', 3],[241.0, 525, 'K', 6],[244.0, 750, 'K', 6],[285.0, 100, 'nm', 6],[456.0, 725, 'K', 10]

Cu
###Structure and giant magnetoresistance of granular Co-Cu nanolayers prepared by cross-beam PLD|A. Jesche,A. Gorbunoff,A. Mensch,H. Stöcker,A. A. Levin,D. C. Meyer###
(1505602, 1505602)
Structure and giant magnetoresistance of granular Co-Cu nanolayers prepared by cross-beam PLD.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 0, ',', 1],[41.0, 75, ',', 2],[57.0, 13, 'nm', 2],[60.0, 55, 'nm', 2],[157.0, 10, 'nm', 3],[239.0, 525, 'K', 6],[242.0, 750, 'K', 6],[283.0, 100, 'nm', 6],[454.0, 725, 'K', 10]

P
###Structure and giant magnetoresistance of granular Co-Cu nanolayers prepared by cross-beam PLD|A. Jesche,A. Gorbunoff,A. Mensch,H. Stöcker,A. A. Levin,D. C. Meyer###
(1505614, 1505614)
Structure and giant magnetoresistance of granular Co-Cu nanolayers prepared by cross-beam PLD.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 0, ',', 1],[29.0, 75, ',', 2],[45.0, 13, 'nm', 2],[48.0, 55, 'nm', 2],[145.0, 10, 'nm', 3],[227.0, 525, 'K', 6],[230.0, 750, 'K', 6],[271.0, 100, 'nm', 6],[442.0, 725, 'K', 10]

Co
###Structure and giant magnetoresistance of granular Co-Cu nanolayers prepared by cross-beam PLD|A. Jesche,A. Gorbunoff,A. Mensch,H. Stöcker,A. A. Levin,D. C. Meyer###
(1505625, 1505625)
 A series of Cox<missing VAR>Cu100-x (x<missing VAR>  0, 40.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 0, ',', 0],[18.0, 75, ',', 1],[34.0, 13, 'nm', 1],[37.0, 55, 'nm', 1],[134.0, 10, 'nm', 2],[216.0, 525, 'K', 5],[219.0, 750, 'K', 5],[260.0, 100, 'nm', 5],[431.0, 725, 'K', 9]

Cu100-x
###Structure and giant magnetoresistance of granular Co-Cu nanolayers prepared by cross-beam PLD|A. Jesche,A. Gorbunoff,A. Mensch,H. Stöcker,A. A. Levin,D. C. Meyer###
(1505627, 1505630)
 A series of Cox<missing VAR>Cu100-x (x<missing VAR>  0, 40.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[6.0, 0, ',', 0],[13.0, 75, ',', 1],[29.0, 13, 'nm', 1],[32.0, 55, 'nm', 1],[129.0, 10, 'nm', 2],[211.0, 525, 'K', 5],[214.0, 750, 'K', 5],[255.0, 100, 'nm', 5],[426.0, 725, 'K', 9]

W
###Structure and giant magnetoresistance of granular Co-Cu nanolayers prepared by cross-beam PLD|A. Jesche,A. Gorbunoff,A. Mensch,H. Stöcker,A. A. Levin,D. C. Meyer###
(1505699, 1505699)
 Wide-angle X<missing VAR>-ray diffraction (WAXRD), transmissionelectron microscopy (TEM) and electrical transport measurements revealed astructure consisting of decomposed cobalt and copper grains with grain sizes ofabout 10 nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 0, ',', 2],[56.0, 75, ',', 1],[40.0, 13, 'nm', 1],[37.0, 55, 'nm', 1],[60.0, 10, 'nm', 0],[142.0, 525, 'K', 3],[145.0, 750, 'K', 3],[186.0, 100, 'nm', 3],[357.0, 725, 'K', 7]

Co
###Structure and giant magnetoresistance of granular Co-Cu nanolayers prepared by cross-beam PLD|A. Jesche,A. Gorbunoff,A. Mensch,H. Stöcker,A. A. Levin,D. C. Meyer###
(1505814, 1505814)
 Electron diffraction (ED) indicates the presence of anintermetallic Co-Cu phase of Cu3Au structure-type.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 0, ',', 4],[171.0, 75, ',', 3],[155.0, 13, 'nm', 3],[152.0, 55, 'nm', 3],[55.0, 10, 'nm', 2],[27.0, 525, 'K', 1],[30.0, 750, 'K', 1],[71.0, 100, 'nm', 1],[242.0, 725, 'K', 5]

Cu
###Structure and giant magnetoresistance of granular Co-Cu nanolayers prepared by cross-beam PLD|A. Jesche,A. Gorbunoff,A. Mensch,H. Stöcker,A. A. Levin,D. C. Meyer###
(1505816, 1505816)
 Electron diffraction (ED) indicates the presence of anintermetallic Co-Cu phase of Cu3Au structure-type.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[180.0, 0, ',', 4],[173.0, 75, ',', 3],[157.0, 13, 'nm', 3],[154.0, 55, 'nm', 3],[57.0, 10, 'nm', 2],[25.0, 525, 'K', 1],[28.0, 750, 'K', 1],[69.0, 100, 'nm', 1],[240.0, 725, 'K', 5]

Cu3Au
###Structure and giant magnetoresistance of granular Co-Cu nanolayers prepared by cross-beam PLD|A. Jesche,A. Gorbunoff,A. Mensch,H. Stöcker,A. A. Levin,D. C. Meyer###
(1505822, 1505824)
 Electron diffraction (ED) indicates the presence of anintermetallic Co-Cu phase of Cu3Au structure-type.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, 0, ',', 4],[179.0, 75, ',', 3],[163.0, 13, 'nm', 3],[160.0, 55, 'nm', 3],[63.0, 10, 'nm', 2],[17.0, 525, 'K', 1],[20.0, 750, 'K', 1],[61.0, 100, 'nm', 1],[232.0, 725, 'K', 5]

Co
###Structure and giant magnetoresistance of granular Co-Cu nanolayers prepared by cross-beam PLD|A. Jesche,A. Gorbunoff,A. Mensch,H. Stöcker,A. A. Levin,D. C. Meyer###
(1505859, 1505859)
 Thermal treatment attemperatures between 525 K and 750 K results in the progressive decompositionof Co and Cu, with an increase of the grain sizes up to about 100 nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[223.0, 0, ',', 5],[216.0, 75, ',', 4],[200.0, 13, 'nm', 4],[197.0, 55, 'nm', 4],[100.0, 10, 'nm', 3],[18.0, 525, 'K', 0],[15.0, 750, 'K', 0],[26.0, 100, 'nm', 0],[197.0, 725, 'K', 4]

Cu
###Structure and giant magnetoresistance of granular Co-Cu nanolayers prepared by cross-beam PLD|A. Jesche,A. Gorbunoff,A. Mensch,H. Stöcker,A. A. Levin,D. C. Meyer###
(1505863, 1505863)
 Thermal treatment attemperatures between 525 K and 750 K results in the progressive decompositionof Co and Cu, with an increase of the grain sizes up to about 100 nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[227.0, 0, ',', 5],[220.0, 75, ',', 4],[204.0, 13, 'nm', 4],[201.0, 55, 'nm', 4],[104.0, 10, 'nm', 3],[22.0, 525, 'K', 0],[19.0, 750, 'K', 0],[22.0, 100, 'nm', 0],[193.0, 725, 'K', 4]

W
###Structure and giant magnetoresistance of granular Co-Cu nanolayers prepared by cross-beam PLD|A. Jesche,A. Gorbunoff,A. Mensch,H. Stöcker,A. A. Levin,D. C. Meyer###
(1505925, 1505925)
 This istunable by controlling the temperature and duration of the anneal, and isdirectly observable in WAXRD patterns and TEM images.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[289.0, 0, ',', 6],[282.0, 75, ',', 5],[266.0, 13, 'nm', 5],[263.0, 55, 'nm', 5],[166.0, 10, 'nm', 4],[84.0, 525, 'K', 1],[81.0, 750, 'K', 1],[40.0, 100, 'nm', 1],[131.0, 725, 'K', 3]

PbTe
###Absence of nonlocal resistance in microstructures of PbTe quantum wells|K. A. Kolwas,G. Grabecki,S. Trushkin,J. Wróbel,M. Aleszkiewicz,Ł. Cywiński,T. Dietl,G. Springholz,G. Bauer###
(1506081, 1506082)
Absence of nonlocal resistance in microstructures of PbTe quantum wells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[331.0, 12, 'nm', 5],[458.0, 0.02, 'for', 8]

PbTe
###Absence of nonlocal resistance in microstructures of PbTe quantum wells|K. A. Kolwas,G. Grabecki,S. Trushkin,J. Wróbel,M. Aleszkiewicz,Ł. Cywiński,T. Dietl,G. Springholz,G. Bauer###
(1506147, 1506148)
 We report on experiments allowing to set an upper limit on the magnitude ofthe spin Hall effect and the conductance by edge channels in quantum wells ofPbTe embedded between PbEuTe barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[265.0, 12, 'nm', 4],[392.0, 0.02, 'for', 7]

PbEuTe
###Absence of nonlocal resistance in microstructures of PbTe quantum wells|K. A. Kolwas,G. Grabecki,S. Trushkin,J. Wróbel,M. Aleszkiewicz,Ł. Cywiński,T. Dietl,G. Springholz,G. Bauer###
(1506154, 1506156)
 We report on experiments allowing to set an upper limit on the magnitude ofthe spin Hall effect and the conductance by edge channels in quantum wells ofPbTe embedded between PbEuTe barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[257.0, 12, 'nm', 4],[384.0, 0.02, 'for', 7]

PbSe
###Absence of nonlocal resistance in microstructures of PbTe quantum wells|K. A. Kolwas,G. Grabecki,S. Trushkin,J. Wróbel,M. Aleszkiewicz,Ł. Cywiński,T. Dietl,G. Springholz,G. Bauer###
(1506184, 1506185)
 We reexamine previous data obtained forepitaxial microstructures of n<missing VAR>-type PbSe and PbTe, in which pronounced nonlocaleffects and reproducible magnetoresistance oscillations were found.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[228.0, 12, 'nm', 3],[355.0, 0.02, 'for', 6]

PbTe
###Absence of nonlocal resistance in microstructures of PbTe quantum wells|K. A. Kolwas,G. Grabecki,S. Trushkin,J. Wróbel,M. Aleszkiewicz,Ł. Cywiński,T. Dietl,G. Springholz,G. Bauer###
(1506189, 1506190)
 We reexamine previous data obtained forepitaxial microstructures of n<missing VAR>-type PbSe and PbTe, in which pronounced nonlocaleffects and reproducible magnetoresistance oscillations were found.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[223.0, 12, 'nm', 3],[350.0, 0.02, 'for', 6]

BaF2
###Absence of nonlocal resistance in microstructures of PbTe quantum wells|K. A. Kolwas,G. Grabecki,S. Trushkin,J. Wróbel,M. Aleszkiewicz,Ł. Cywiński,T. Dietl,G. Springholz,G. Bauer###
(1506259, 1506261)
 Here weshow that these effects are brought about by a quasi-periodic network ofthreading dislocations adjacent to the BaF2 substrate, which give rise to ap<missing VAR>-type interfacial layer and an associated parasitic parallel conductance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 12, 'nm', 2],[279.0, 0.02, 'for', 5]

Pb
###Absence of nonlocal resistance in microstructures of PbTe quantum wells|K. A. Kolwas,G. Grabecki,S. Trushkin,J. Wróbel,M. Aleszkiewicz,Ł. Cywiński,T. Dietl,G. Springholz,G. Bauer###
(1506328, 1506328)
 Wethen present results of transport measurements on microstructures of modulationdoped PbTe/(Pb,Eu)TeBi heterostructures for which the influence of parasiticparallel conductance is minimized, and for which quantum Hall transport hadbeen observed, on similar samples, previously.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 12, 'nm', 1],[212.0, 0.02, 'for', 4]

Eu
###Absence of nonlocal resistance in microstructures of PbTe quantum wells|K. A. Kolwas,G. Grabecki,S. Trushkin,J. Wróbel,M. Aleszkiewicz,Ł. Cywiński,T. Dietl,G. Springholz,G. Bauer###
(1506330, 1506330)
 Wethen present results of transport measurements on microstructures of modulationdoped PbTe/(Pb,Eu)TeBi heterostructures for which the influence of parasiticparallel conductance is minimized, and for which quantum Hall transport hadbeen observed, on similar samples, previously.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 12, 'nm', 1],[210.0, 0.02, 'for', 4]

TeBi
###Absence of nonlocal resistance in microstructures of PbTe quantum wells|K. A. Kolwas,G. Grabecki,S. Trushkin,J. Wróbel,M. Aleszkiewicz,Ł. Cywiński,T. Dietl,G. Springholz,G. Bauer###
(1506332, 1506333)
 Wethen present results of transport measurements on microstructures of modulationdoped PbTe/(Pb,Eu)TeBi heterostructures for which the influence of parasiticparallel conductance is minimized, and for which quantum Hall transport hadbeen observed, on similar samples, previously.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 12, 'nm', 1],[207.0, 0.02, 'for', 4]

H
###Absence of nonlocal resistance in microstructures of PbTe quantum wells|K. A. Kolwas,G. Grabecki,S. Trushkin,J. Wróbel,M. Aleszkiewicz,Ł. Cywiński,T. Dietl,G. Springholz,G. Bauer###
(1506397, 1506397)
 These structures are of H-shapedgeometry and they are patterned of 12 nm thick strained PbTe quantum wellsembedded between Pb0.92Eu0.08Te barriers.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 12, 'nm', 0],[143.0, 0.02, 'for', 3]

PbTe
###Absence of nonlocal resistance in microstructures of PbTe quantum wells|K. A. Kolwas,G. Grabecki,S. Trushkin,J. Wróbel,M. Aleszkiewicz,Ł. Cywiński,T. Dietl,G. Springholz,G. Bauer###
(1506419, 1506420)
 These structures are of H-shapedgeometry and they are patterned of 12 nm thick strained PbTe quantum wellsembedded between Pb0.92Eu0.08Te barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 12, 'nm', 0],[120.0, 0.02, 'for', 3]

Pb0.92Eu0.08Te
###Absence of nonlocal resistance in microstructures of PbTe quantum wells|K. A. Kolwas,G. Grabecki,S. Trushkin,J. Wróbel,M. Aleszkiewicz,Ł. Cywiński,T. Dietl,G. Springholz,G. Bauer###
(1506431, 1506435)
 These structures are of H-shapedgeometry and they are patterned of 12 nm thick strained PbTe quantum wellsembedded between Pb0.92Eu0.08Te barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.04,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.46,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 12, 'nm', 0],[105.0, 0.02, 'for', 3]

PbTe
###Absence of nonlocal resistance in microstructures of PbTe quantum wells|K. A. Kolwas,G. Grabecki,S. Trushkin,J. Wróbel,M. Aleszkiewicz,Ł. Cywiński,T. Dietl,G. Springholz,G. Bauer###
(1506502, 1506503)
 For these structures no nonlocalresistance is detected confirming that PbTe is a trivial insulator.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 12, 'nm', 2],[37.0, 0.02, 'for', 1]

PbTe/PbEuTe
###Absence of nonlocal resistance in microstructures of PbTe quantum wells|K. A. Kolwas,G. Grabecki,S. Trushkin,J. Wróbel,M. Aleszkiewicz,Ł. Cywiński,T. Dietl,G. Springholz,G. Bauer###
(1506543, 1506548)
 Themagnitude of spin Hall angle gamma is estimated to be smaller than 0.02 forPbTe/PbEuTe microstructures in the diffusive regime.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[130.0, 12, 'nm', 3],[3.0, 0.02, 'for', 0]

Fe
###Anisotropic Magnetoresistance Effects in Fe, Co, Ni, Fe_4N, and Half-Metallic Ferromagnet: A Systematic Analysis|Satoshi Kokado,Masakiyo Tsunoda,Kikuo Harigaya,Akimasa Sakuma###
(1506577, 1506577)
Anisotropic Magnetoresistance Effects in Fe, Co, Ni, Fe4N, and Half-Metallic Ferromagnet A Systematic Analysis.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Anisotropic Magnetoresistance Effects in Fe, Co, Ni, Fe_4N, and Half-Metallic Ferromagnet: A Systematic Analysis|Satoshi Kokado,Masakiyo Tsunoda,Kikuo Harigaya,Akimasa Sakuma###
(1506580, 1506580)
Anisotropic Magnetoresistance Effects in Fe, Co, Ni, Fe4N, and Half-Metallic Ferromagnet A Systematic Analysis.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Anisotropic Magnetoresistance Effects in Fe, Co, Ni, Fe_4N, and Half-Metallic Ferromagnet: A Systematic Analysis|Satoshi Kokado,Masakiyo Tsunoda,Kikuo Harigaya,Akimasa Sakuma###
(1506583, 1506583)
Anisotropic Magnetoresistance Effects in Fe, Co, Ni, Fe4N, and Half-Metallic Ferromagnet A Systematic Analysis.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe4N
###Anisotropic Magnetoresistance Effects in Fe, Co, Ni, Fe_4N, and Half-Metallic Ferromagnet: A Systematic Analysis|Satoshi Kokado,Masakiyo Tsunoda,Kikuo Harigaya,Akimasa Sakuma###
(1506586, 1506588)
Anisotropic Magnetoresistance Effects in Fe, Co, Ni, Fe4N, and Half-Metallic Ferromagnet A Systematic Analysis.
Featurization terminated normally.
0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Anisotropic Magnetoresistance Effects in Fe, Co, Ni, Fe_4N, and Half-Metallic Ferromagnet: A Systematic Analysis|Satoshi Kokado,Masakiyo Tsunoda,Kikuo Harigaya,Akimasa Sakuma###
(1506631, 1506631)
 We theoretically analyze the anisotropic magnetoresistance (AMR) effects ofbcc Fe (), fcc Co (), fcc Ni (), Fe4N (-), and a half-metallicferromagnet (-).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

()
###Anisotropic Magnetoresistance Effects in Fe, Co, Ni, Fe_4N, and Half-Metallic Ferromagnet: A Systematic Analysis|Satoshi Kokado,Masakiyo Tsunoda,Kikuo Harigaya,Akimasa Sakuma###
(1506633, 1506634)
 We theoretically analyze the anisotropic magnetoresistance (AMR) effects ofbcc Fe (), fcc Co (), fcc Ni (), Fe4N (-), and a half-metallicferromagnet (-).
EXCEPTION Co
###Anisotropic Magnetoresistance Effects in Fe, Co, Ni, Fe_4N, and Half-Metallic Ferromagnet: A Systematic Analysis|Satoshi Kokado,Masakiyo Tsunoda,Kikuo Harigaya,Akimasa Sakuma###
Abstract does not contain any numbers.

 We theoretically analyze the anisotropic magnetoresistance (AMR) effects ofbcc Fe (), fcc Co (), fcc Ni (), Fe4N (-), and a half-metallicferromagnet (-).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0

()
###Anisotropic Magnetoresistance Effects in Fe, Co, Ni, Fe_4N, and Half-Metallic Ferromagnet: A Systematic Analysis|Satoshi Kokado,Masakiyo Tsunoda,Kikuo Harigaya,Akimasa Sakuma###
Abstract does not contain any numbers.

Tb5-x
###Evolution of a metastable phase with a magnetic phase coexistence phenomenon and its unusual sensitivity to magnetic field cycling in the alloys Tb5-xLuxSi3 (x <= 0.7)|K. Mukherjee,Kartik K. Iyer,E. V. Sampathkumaran###
(1507103, 1507106)
Evolution of a metastable phase with a magnetic phase coexistence phenomenon and its unusual sensitivity to magnetic field cycling in the alloys Tb5-xLuxSi3 (x<missing VAR> < 0.7).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[308.0, 1.8, 'K', 6]

Si3
###Evolution of a metastable phase with a magnetic phase coexistence phenomenon and its unusual sensitivity to magnetic field cycling in the alloys Tb5-xLuxSi3 (x <= 0.7)|K. Mukherjee,Kartik K. Iyer,E. V. Sampathkumaran###
(1507108, 1507109)
Evolution of a metastable phase with a magnetic phase coexistence phenomenon and its unusual sensitivity to magnetic field cycling in the alloys Tb5-xLuxSi3 (x<missing VAR> < 0.7).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[305.0, 1.8, 'K', 6]

Tb5Si3
###Evolution of a metastable phase with a magnetic phase coexistence phenomenon and its unusual sensitivity to magnetic field cycling in the alloys Tb5-xLuxSi3 (x <= 0.7)|K. Mukherjee,Kartik K. Iyer,E. V. Sampathkumaran###
(1507154, 1507157)
 Recently, we reported an anomalous enhancement of the positivemagnetoresistance beyond a critical magnetic field in Tb5Si3 in themagnetically ordered state, attributable to inverse metamagnetism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.375,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.625,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[257.0, 1.8, 'K', 5]

In
###Evolution of a metastable phase with a magnetic phase coexistence phenomenon and its unusual sensitivity to magnetic field cycling in the alloys Tb5-xLuxSi3 (x <= 0.7)|K. Mukherjee,Kartik K. Iyer,E. V. Sampathkumaran###
(1507226, 1507226)
 In thispaper, we report the influence of small substitutions of Lu for Tb, to show theevolution of these magnetic anomalies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 1.8, 'K', 3]

Lu
###Evolution of a metastable phase with a magnetic phase coexistence phenomenon and its unusual sensitivity to magnetic field cycling in the alloys Tb5-xLuxSi3 (x <= 0.7)|K. Mukherjee,Kartik K. Iyer,E. V. Sampathkumaran###
(1507250, 1507250)
 In thispaper, we report the influence of small substitutions of Lu for Tb, to show theevolution of these magnetic anomalies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 1.8, 'K', 3]

Tb
###Evolution of a metastable phase with a magnetic phase coexistence phenomenon and its unusual sensitivity to magnetic field cycling in the alloys Tb5-xLuxSi3 (x <= 0.7)|K. Mukherjee,Kartik K. Iyer,E. V. Sampathkumaran###
(1507254, 1507254)
 In thispaper, we report the influence of small substitutions of Lu for Tb, to show theevolution of these magnetic anomalies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 1.8, 'K', 3]

Lu
###Evolution of a metastable phase with a magnetic phase coexistence phenomenon and its unusual sensitivity to magnetic field cycling in the alloys Tb5-xLuxSi3 (x <= 0.7)|K. Mukherjee,Kartik K. Iyer,E. V. Sampathkumaran###
(1507333, 1507333)
 We find that, at low temperatures, thehigh-field high-resistivity phase could be partially stabilized on returningthe magnetic field to zero in many of these Lu substituted alloys, as measuredthrough the electrical resistivity (rho).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 1.8, 'K', 2]

Co2FeAl/MgO/CoFe
###Reduction of spin polarization by incoherent tunneling in Co2FeAl/MgO/CoFe magnetic tunnel junctions with thick MgO barriers|M. S. Gabor,C. Tiusan,T. Petrisor Jr,T. Petrisor,M. Hehn,Y. Lu,E. Snoeck###
(1507521, 1507530)
Reduction of spin polarization by incoherent tunneling in Co2FeAl/MgO/CoFe magnetic tunnel junctions with thick MgO barriers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[131.0, 3.8, '%', 2]

MgO
###Reduction of spin polarization by incoherent tunneling in Co2FeAl/MgO/CoFe magnetic tunnel junctions with thick MgO barriers|M. S. Gabor,C. Tiusan,T. Petrisor Jr,T. Petrisor,M. Hehn,Y. Lu,E. Snoeck###
(1507542, 1507543)
Reduction of spin polarization by incoherent tunneling in Co2FeAl/MgO/CoFe magnetic tunnel junctions with thick MgO barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 3.8, '%', 2]

Co2FeAl/MgO/Co50Fe50
###Reduction of spin polarization by incoherent tunneling in Co2FeAl/MgO/CoFe magnetic tunnel junctions with thick MgO barriers|M. S. Gabor,C. Tiusan,T. Petrisor Jr,T. Petrisor,M. Hehn,Y. Lu,E. Snoeck###
(1507575, 1507586)
 We report on spin polarization reduction by incoherent tunneling in realisticsingle crystal Co2FeAl/MgO/Co50Fe50 magnetic tunnel junctions (MTJ) compared toreference Fe/MgO/Fe.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[75.0, 3.8, '%', 1]

Fe/MgO/Fe
###Reduction of spin polarization by incoherent tunneling in Co2FeAl/MgO/CoFe magnetic tunnel junctions with thick MgO barriers|M. S. Gabor,C. Tiusan,T. Petrisor Jr,T. Petrisor,M. Hehn,Y. Lu,E. Snoeck###
(1507607, 1507612)
 We report on spin polarization reduction by incoherent tunneling in realisticsingle crystal Co2FeAl/MgO/Co50Fe50 magnetic tunnel junctions (MTJ) compared toreference Fe/MgO/Fe.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[49.0, 3.8, '%', 1]

MgO
###Reduction of spin polarization by incoherent tunneling in Co2FeAl/MgO/CoFe magnetic tunnel junctions with thick MgO barriers|M. S. Gabor,C. Tiusan,T. Petrisor Jr,T. Petrisor,M. Hehn,Y. Lu,E. Snoeck###
(1507652, 1507653)
 A large density of misfit dislocations in the Heuslerbased MTJs has been insured by a thick MgO barrier and its 3.8% latticemismatch with the Co2FeAl electrode.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 3.8, '%', 0]

Co2FeAl
###Reduction of spin polarization by incoherent tunneling in Co2FeAl/MgO/CoFe magnetic tunnel junctions with thick MgO barriers|M. S. Gabor,C. Tiusan,T. Petrisor Jr,T. Petrisor,M. Hehn,Y. Lu,E. Snoeck###
(1507673, 1507676)
 A large density of misfit dislocations in the Heuslerbased MTJs has been insured by a thick MgO barrier and its 3.8% latticemismatch with the Co2FeAl electrode.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 3.8, '%', 0]

MgO
###Reduction of spin polarization by incoherent tunneling in Co2FeAl/MgO/CoFe magnetic tunnel junctions with thick MgO barriers|M. S. Gabor,C. Tiusan,T. Petrisor Jr,T. Petrisor,M. Hehn,Y. Lu,E. Snoeck###
(1507904, 1507905)
 This affects the symmetry filtering efficiency of the Delta1 statesacross the (100) MgO barriers and reduces the associated effective tunnelingpolarization.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[243.0, 3.8, '%', 6]

MgO
###Reduction of spin polarization by incoherent tunneling in Co2FeAl/MgO/CoFe magnetic tunnel junctions with thick MgO barriers|M. S. Gabor,C. Tiusan,T. Petrisor Jr,T. Petrisor,M. Hehn,Y. Lu,E. Snoeck###
(1507940, 1507941)
 Secondly, dislocations provide localized states within the MgOgap.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[279.0, 3.8, '%', 7]

Fe/MgAl2O4
###A first-principles study of tunneling magnetoresistance in Fe/MgAl2O4/Fe(001) magnetic tunnel junctions|Yoshio Miura,Shingo Muramoto,Kazutaka Abe,Masafumi Shirai###
(1508036, 1508042)
A first-principles study of tunneling magnetoresistance in Fe/MgAl2O4/Fe(001) magnetic tunnel junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[131.0, 160, '%', 2],[167.0, 1600, '%', 2],[199.0, 1, 'symmetry', 3],[462.0, 1, 'evanescent', 5],[486.0, 0, ',', 5]

Fe/MgAl2O4
###A first-principles study of tunneling magnetoresistance in Fe/MgAl2O4/Fe(001) magnetic tunnel junctions|Yoshio Miura,Shingo Muramoto,Kazutaka Abe,Masafumi Shirai###
(1508072, 1508078)
 We investigated the spin-dependent transport properties of Fe/MgAl2O4/Fe(001)magnetic tunneling junctions (MTJs) on the basis of first-principlescalculations of the electronic structures and the ballistic conductance.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[95.0, 160, '%', 1],[131.0, 1600, '%', 1],[163.0, 1, 'symmetry', 2],[426.0, 1, 'evanescent', 4],[450.0, 0, ',', 4]

Fe/MgAl2O4
###A first-principles study of tunneling magnetoresistance in Fe/MgAl2O4/Fe(001) magnetic tunnel junctions|Yoshio Miura,Shingo Muramoto,Kazutaka Abe,Masafumi Shirai###
(1508151, 1508157)
 Thecalculated tunneling magnetoresistance (TMR) ratio of a Fe/MgAl2O4/Fe(001) MTJwas about 160%, which was much smaller than that of a Fe/MgO/Fe(001) MTJ(1600%) for the same barrier thickness.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[16.0, 160, '%', 0],[52.0, 1600, '%', 0],[84.0, 1, 'symmetry', 1],[347.0, 1, 'evanescent', 3],[371.0, 0, ',', 3]

Fe/MgO
###A first-principles study of tunneling magnetoresistance in Fe/MgAl2O4/Fe(001) magnetic tunnel junctions|Yoshio Miura,Shingo Muramoto,Kazutaka Abe,Masafumi Shirai###
(1508193, 1508196)
 Thecalculated tunneling magnetoresistance (TMR) ratio of a Fe/MgAl2O4/Fe(001) MTJwas about 160%, which was much smaller than that of a Fe/MgO/Fe(001) MTJ(1600%) for the same barrier thickness.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[20.0, 160, '%', 0],[13.0, 1600, '%', 0],[45.0, 1, 'symmetry', 1],[308.0, 1, 'evanescent', 3],[332.0, 0, ',', 3]

MgAl2O4
###A first-principles study of tunneling magnetoresistance in Fe/MgAl2O4/Fe(001) magnetic tunnel junctions|Yoshio Miura,Shingo Muramoto,Kazutaka Abe,Masafumi Shirai###
(1508266, 1508270)
 However, there was an evanescent statewith delta 1 symmetry in the energy gap around the Fermi level of normal spinelMgAl2O4, indicating the possibility of a large TMR in Fe/MgAl2O4/Fe(001) MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0.14285714285714285,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 160, '%', 1],[57.0, 1600, '%', 1],[25.0, 1, 'symmetry', 0],[234.0, 1, 'evanescent', 2],[258.0, 0, ',', 2]

Fe/MgAl2O4
###A first-principles study of tunneling magnetoresistance in Fe/MgAl2O4/Fe(001) magnetic tunnel junctions|Yoshio Miura,Shingo Muramoto,Kazutaka Abe,Masafumi Shirai###
(1508291, 1508297)
 However, there was an evanescent statewith delta 1 symmetry in the energy gap around the Fermi level of normal spinelMgAl2O4, indicating the possibility of a large TMR in Fe/MgAl2O4/Fe(001) MTJs.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[118.0, 160, '%', 1],[82.0, 1600, '%', 1],[50.0, 1, 'symmetry', 0],[207.0, 1, 'evanescent', 2],[231.0, 0, ',', 2]

Fe/MgAl2O4
###A first-principles study of tunneling magnetoresistance in Fe/MgAl2O4/Fe(001) magnetic tunnel junctions|Yoshio Miura,Shingo Muramoto,Kazutaka Abe,Masafumi Shirai###
(1508324, 1508330)
The small TMR ratio of the Fe/MgAl2O4/Fe(001) MTJ was due to new conductivechannels in the minority spin states resulting from a band-folding effect inthe two-dimensional (2-D) Brillouin zone of the in-plane wave vector (k<missing VAR>//) ofthe Fe electrode.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[151.0, 160, '%', 2],[115.0, 1600, '%', 2],[83.0, 1, 'symmetry', 1],[174.0, 1, 'evanescent', 1],[198.0, 0, ',', 1]

Fe
###A first-principles study of tunneling magnetoresistance in Fe/MgAl2O4/Fe(001) magnetic tunnel junctions|Yoshio Miura,Shingo Muramoto,Kazutaka Abe,Masafumi Shirai###
(1508418, 1508418)
The small TMR ratio of the Fe/MgAl2O4/Fe(001) MTJ was due to new conductivechannels in the minority spin states resulting from a band-folding effect inthe two-dimensional (2-D) Brillouin zone of the in-plane wave vector (k<missing VAR>//) ofthe Fe electrode.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[245.0, 160, '%', 2],[209.0, 1600, '%', 2],[177.0, 1, 'symmetry', 1],[86.0, 1, 'evanescent', 1],[110.0, 0, ',', 1]

MgAl2O4
###A first-principles study of tunneling magnetoresistance in Fe/MgAl2O4/Fe(001) magnetic tunnel junctions|Yoshio Miura,Shingo Muramoto,Kazutaka Abe,Masafumi Shirai###
(1508437, 1508441)
 Since the in-plane cell size of MgAl2O4 is twice that of theprimitive in-plane cell size of bcc Fe, the bands in the boundary edges arefolded, and minority-spin states coupled with the delta 1 evanescent state inthe MgAl2O4 barrier appear at k<missing VAR>//0, which reduces the TMR ratio of the MTJssignificantly.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0.14285714285714285,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[264.0, 160, '%', 3],[228.0, 1600, '%', 3],[196.0, 1, 'symmetry', 2],[63.0, 1, 'evanescent', 0],[87.0, 0, ',', 0]

Fe
###A first-principles study of tunneling magnetoresistance in Fe/MgAl2O4/Fe(001) magnetic tunnel junctions|Yoshio Miura,Shingo Muramoto,Kazutaka Abe,Masafumi Shirai###
(1508468, 1508468)
 Since the in-plane cell size of MgAl2O4 is twice that of theprimitive in-plane cell size of bcc Fe, the bands in the boundary edges arefolded, and minority-spin states coupled with the delta 1 evanescent state inthe MgAl2O4 barrier appear at k<missing VAR>//0, which reduces the TMR ratio of the MTJssignificantly.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[295.0, 160, '%', 3],[259.0, 1600, '%', 3],[227.0, 1, 'symmetry', 2],[36.0, 1, 'evanescent', 0],[60.0, 0, ',', 0]

MgAl2O4
###A first-principles study of tunneling magnetoresistance in Fe/MgAl2O4/Fe(001) magnetic tunnel junctions|Yoshio Miura,Shingo Muramoto,Kazutaka Abe,Masafumi Shirai###
(1508513, 1508517)
 Since the in-plane cell size of MgAl2O4 is twice that of theprimitive in-plane cell size of bcc Fe, the bands in the boundary edges arefolded, and minority-spin states coupled with the delta 1 evanescent state inthe MgAl2O4 barrier appear at k<missing VAR>//0, which reduces the TMR ratio of the MTJssignificantly.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0.14285714285714285,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[340.0, 160, '%', 3],[304.0, 1600, '%', 3],[272.0, 1, 'symmetry', 2],[9.0, 1, 'evanescent', 0],[11.0, 0, ',', 0]

Mn1.5Ga
###Multifunctional L10-Mn1.5Ga films with ultrahigh coercivity, giant perpendicular magnetocrystalline anisotropy and large magnetic energy product|Lijun Zhu,Shuaihua Nie,Kangkang Meng,Dong Pan,Jianhua Zhao,Houzhi Zheng###
(1509155, 1509157)
Multifunctional L<missing VAR>10-Mn1.5Ga films with ultrahigh coercivity, giant perpendicular magnetocrystalline anisotropy and large magnetic energy product.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 8.1, 'to', 1],[97.0, 42.8, 'kOe', 1],[132.0, 27.3, 'to', 1],[133.0, 270.5, 'emu', 1],[144.0, 0.94, 'and', 1],[157.0, 2.6, 'MGOe', 1],[240.0, 60, 'years', 2],[289.0, 5, 'nm', 2],[318.0, 42, 'kOe', 2]

Mn1.5Ga
###Multifunctional L10-Mn1.5Ga films with ultrahigh coercivity, giant perpendicular magnetocrystalline anisotropy and large magnetic energy product|Lijun Zhu,Shuaihua Nie,Kangkang Meng,Dong Pan,Jianhua Zhao,Houzhi Zheng###
(1509221, 1509223)
 We present the fascinating magnetic properties in homogenous noble-metal-freeand rare-earth-free L<missing VAR>10-Mn1.5Ga epitaxial films on GaAs (001), includingultrahigh perpendicular coercivity remarkably tunable from 8.1 to 42.8 kOe,giant perpendicular magnetocrystalline anisotropy with a maximum of 22.9Merg/cc, easily controllable magnetization from 27.3 to 270.5 emu/cc, excellentsquareness exceeding 0.94 and large magnetic energy product up to 2.6 MGOe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 8.1, 'to', 0],[31.0, 42.8, 'kOe', 0],[66.0, 27.3, 'to', 0],[67.0, 270.5, 'emu', 0],[78.0, 0.94, 'and', 0],[91.0, 2.6, 'MGOe', 0],[174.0, 60, 'years', 1],[223.0, 5, 'nm', 1],[252.0, 42, 'kOe', 1]

GaAs
###Multifunctional L10-Mn1.5Ga films with ultrahigh coercivity, giant perpendicular magnetocrystalline anisotropy and large magnetic energy product|Lijun Zhu,Shuaihua Nie,Kangkang Meng,Dong Pan,Jianhua Zhao,Houzhi Zheng###
(1509231, 1509232)
 We present the fascinating magnetic properties in homogenous noble-metal-freeand rare-earth-free L<missing VAR>10-Mn1.5Ga epitaxial films on GaAs (001), includingultrahigh perpendicular coercivity remarkably tunable from 8.1 to 42.8 kOe,giant perpendicular magnetocrystalline anisotropy with a maximum of 22.9Merg/cc, easily controllable magnetization from 27.3 to 270.5 emu/cc, excellentsquareness exceeding 0.94 and large magnetic energy product up to 2.6 MGOe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 8.1, 'to', 0],[22.0, 42.8, 'kOe', 0],[57.0, 27.3, 'to', 0],[58.0, 270.5, 'emu', 0],[69.0, 0.94, 'and', 0],[82.0, 2.6, 'MGOe', 0],[165.0, 60, 'years', 1],[214.0, 5, 'nm', 1],[243.0, 42, 'kOe', 1]

Mn1.5Ga
###Multifunctional L10-Mn1.5Ga films with ultrahigh coercivity, giant perpendicular magnetocrystalline anisotropy and large magnetic energy product|Lijun Zhu,Shuaihua Nie,Kangkang Meng,Dong Pan,Jianhua Zhao,Houzhi Zheng###
(1509338, 1509340)
These magnificent room-temperature magnetic characteristics make ourL<missing VAR>10-Mn1.5Ga films multifunctional as outstanding and cost-effective alternativefor not only perpendicular magnetic recording bits with areal density over 30Tb inch-2 and thermal stability over 60 years, but variety of novel deviceswith high magnetic-noise immunity and thermal stability like spin-torque MRAMsand oscillators pillars below 5 nm in dimension, and giant magnetoresistancesensors able to measure high fileds up to 42 kOe .
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 8.1, 'to', 1],[84.0, 42.8, 'kOe', 1],[49.0, 27.3, 'to', 1],[48.0, 270.5, 'emu', 1],[37.0, 0.94, 'and', 1],[24.0, 2.6, 'MGOe', 1],[57.0, 60, 'years', 0],[106.0, 5, 'nm', 0],[135.0, 42, 'kOe', 0]

Tb
###Multifunctional L10-Mn1.5Ga films with ultrahigh coercivity, giant perpendicular magnetocrystalline anisotropy and large magnetic energy product|Lijun Zhu,Shuaihua Nie,Kangkang Meng,Dong Pan,Jianhua Zhao,Houzhi Zheng###
(1509384, 1509384)
These magnificent room-temperature magnetic characteristics make ourL<missing VAR>10-Mn1.5Ga films multifunctional as outstanding and cost-effective alternativefor not only perpendicular magnetic recording bits with areal density over 30Tb inch-2 and thermal stability over 60 years, but variety of novel deviceswith high magnetic-noise immunity and thermal stability like spin-torque MRAMsand oscillators pillars below 5 nm in dimension, and giant magnetoresistancesensors able to measure high fileds up to 42 kOe .
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 8.1, 'to', 1],[130.0, 42.8, 'kOe', 1],[95.0, 27.3, 'to', 1],[94.0, 270.5, 'emu', 1],[83.0, 0.94, 'and', 1],[70.0, 2.6, 'MGOe', 1],[13.0, 60, 'years', 0],[62.0, 5, 'nm', 0],[91.0, 42, 'kOe', 0]

CeRuSn
###Nature of the magnetic ground state in the mixed valence compound CeRuSn: a single-crystal study|Fikacek jan,Prokleska Jan,Prchal Jiri,Custers Jeroen,Sechovsky Vladimir###
(1509557, 1509559)
Nature of the magnetic ground state in the mixed valence compound CeRuSn a single-crystal study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 1.5, 'and', 3],[153.0, 0.8, 'T', 3],[194.0, 25, '%', 4]

CeRuSn
###Nature of the magnetic ground state in the mixed valence compound CeRuSn: a single-crystal study|Fikacek jan,Prokleska Jan,Prchal Jiri,Custers Jeroen,Sechovsky Vladimir###
(1509612, 1509614)
 We report on detailed low temperature measurements of the magnetization, thespecific heat and the electrical resistivity on high quality CeRuSn singlecrystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 1.5, 'and', 2],[98.0, 0.8, 'T', 2],[139.0, 25, '%', 3]

N
###Nature of the magnetic ground state in the mixed valence compound CeRuSn: a single-crystal study|Fikacek jan,Prokleska Jan,Prchal Jiri,Custers Jeroen,Sechovsky Vladimir###
(1509635, 1509635)
 The compound orders antiferromagnetically at T<missing VAR>rm N  2.8 K withthe Ce3 ions locked within the a-c<missing VAR> plane of the monoclinic structure.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 1.5, 'and', 1],[77.0, 0.8, 'T', 1],[118.0, 25, '%', 2]

K
###Nature of the magnetic ground state in the mixed valence compound CeRuSn: a single-crystal study|Fikacek jan,Prokleska Jan,Prchal Jiri,Custers Jeroen,Sechovsky Vladimir###
(1509640, 1509640)
 The compound orders antiferromagnetically at T<missing VAR>rm N  2.8 K withthe Ce3 ions locked within the a-c<missing VAR> plane of the monoclinic structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 1.5, 'and', 1],[72.0, 0.8, 'T', 1],[113.0, 25, '%', 2]

Ce3
###Nature of the magnetic ground state in the mixed valence compound CeRuSn: a single-crystal study|Fikacek jan,Prokleska Jan,Prchal Jiri,Custers Jeroen,Sechovsky Vladimir###
(1509647, 1509648)
 The compound orders antiferromagnetically at T<missing VAR>rm N  2.8 K withthe Ce3 ions locked within the a-c<missing VAR> plane of the monoclinic structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 1.5, 'and', 1],[64.0, 0.8, 'T', 1],[105.0, 25, '%', 2]

N
###Nature of the magnetic ground state in the mixed valence compound CeRuSn: a single-crystal study|Fikacek jan,Prokleska Jan,Prchal Jiri,Custers Jeroen,Sechovsky Vladimir###
(1509685, 1509685)
Magnetization shows that below T<missing VAR>rm N CeRuSn undergoes a metamagnetictransition when applying a magnetic field of 1.5 and 0.8 T along the a andc<missing VAR>--axis, respectively.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 1.5, 'and', 0],[27.0, 0.8, 'T', 0],[68.0, 25, '%', 1]

CeRuSn
###Nature of the magnetic ground state in the mixed valence compound CeRuSn: a single-crystal study|Fikacek jan,Prokleska Jan,Prchal Jiri,Custers Jeroen,Sechovsky Vladimir###
(1509687, 1509689)
Magnetization shows that below T<missing VAR>rm N CeRuSn undergoes a metamagnetictransition when applying a magnetic field of 1.5 and 0.8 T along the a andc<missing VAR>--axis, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 1.5, 'and', 0],[23.0, 0.8, 'T', 0],[64.0, 25, '%', 1]

N
###Nature of the magnetic ground state in the mixed valence compound CeRuSn: a single-crystal study|Fikacek jan,Prokleska Jan,Prchal Jiri,Custers Jeroen,Sechovsky Vladimir###
(1509807, 1509807)
 The value of the saturatedmagnetization along the easy magnetization direction (c<missing VAR>--axis) and themagnetic entropy above T<missing VAR>rm N derived from specific heat data correspondto the scenario where only one third of the Ce ions in the compound beingtrivalent and carrying a stable Ce3 magnetic moment, whereas the othertwo thirds of the Ce ions are in a nonmagnetic tetravalent and/or mixed valencestate.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 1.5, 'and', 2],[95.0, 0.8, 'T', 2],[54.0, 25, '%', 1]

Ce
###Nature of the magnetic ground state in the mixed valence compound CeRuSn: a single-crystal study|Fikacek jan,Prokleska Jan,Prchal Jiri,Custers Jeroen,Sechovsky Vladimir###
(1509840, 1509840)
 The value of the saturatedmagnetization along the easy magnetization direction (c<missing VAR>--axis) and themagnetic entropy above T<missing VAR>rm N derived from specific heat data correspondto the scenario where only one third of the Ce ions in the compound beingtrivalent and carrying a stable Ce3 magnetic moment, whereas the othertwo thirds of the Ce ions are in a nonmagnetic tetravalent and/or mixed valencestate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 1.5, 'and', 2],[128.0, 0.8, 'T', 2],[87.0, 25, '%', 1]

Ce3
###Nature of the magnetic ground state in the mixed valence compound CeRuSn: a single-crystal study|Fikacek jan,Prokleska Jan,Prchal Jiri,Custers Jeroen,Sechovsky Vladimir###
(1509863, 1509864)
 The value of the saturatedmagnetization along the easy magnetization direction (c<missing VAR>--axis) and themagnetic entropy above T<missing VAR>rm N derived from specific heat data correspondto the scenario where only one third of the Ce ions in the compound beingtrivalent and carrying a stable Ce3 magnetic moment, whereas the othertwo thirds of the Ce ions are in a nonmagnetic tetravalent and/or mixed valencestate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 1.5, 'and', 2],[151.0, 0.8, 'T', 2],[110.0, 25, '%', 1]

Ce
###Nature of the magnetic ground state in the mixed valence compound CeRuSn: a single-crystal study|Fikacek jan,Prokleska Jan,Prchal Jiri,Custers Jeroen,Sechovsky Vladimir###
(1509886, 1509886)
 The value of the saturatedmagnetization along the easy magnetization direction (c<missing VAR>--axis) and themagnetic entropy above T<missing VAR>rm N derived from specific heat data correspondto the scenario where only one third of the Ce ions in the compound beingtrivalent and carrying a stable Ce3 magnetic moment, whereas the othertwo thirds of the Ce ions are in a nonmagnetic tetravalent and/or mixed valencestate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 1.5, 'and', 2],[174.0, 0.8, 'T', 2],[133.0, 25, '%', 1]

CeRuSn
###Nature of the magnetic ground state in the mixed valence compound CeRuSn: a single-crystal study|Fikacek jan,Prokleska Jan,Prchal Jiri,Custers Jeroen,Sechovsky Vladimir###
(1509926, 1509928)
 This is consistent with the low temperature CeRuSn crystal structurei<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[215.0, 1.5, 'and', 3],[214.0, 0.8, 'T', 3],[173.0, 25, '%', 2]

CeCoAl
###Nature of the magnetic ground state in the mixed valence compound CeRuSn: a single-crystal study|Fikacek jan,Prokleska Jan,Prchal Jiri,Custers Jeroen,Sechovsky Vladimir###
(1509961, 1509963)
,, a superstructure consisting of three unit cells of the CeCoAl-typepiled up along the c<missing VAR>--axis, and in which the Ce3 ions are characterizedby large distances from the Ru ligands while the Ce-Ru distances of the otherCe ions are much shorter causing a strong 4it f<missing VAR>-ligand hybridization andhence leading to tetravalent and/or mixed valence Ce ions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[250.0, 1.5, 'and', 5],[249.0, 0.8, 'T', 5],[208.0, 25, '%', 4]

Ce3
###Nature of the magnetic ground state in the mixed valence compound CeRuSn: a single-crystal study|Fikacek jan,Prokleska Jan,Prchal Jiri,Custers Jeroen,Sechovsky Vladimir###
(1509990, 1509991)
,, a superstructure consisting of three unit cells of the CeCoAl-typepiled up along the c<missing VAR>--axis, and in which the Ce3 ions are characterizedby large distances from the Ru ligands while the Ce-Ru distances of the otherCe ions are much shorter causing a strong 4it f<missing VAR>-ligand hybridization andhence leading to tetravalent and/or mixed valence Ce ions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[279.0, 1.5, 'and', 5],[278.0, 0.8, 'T', 5],[237.0, 25, '%', 4]

Ru
###Nature of the magnetic ground state in the mixed valence compound CeRuSn: a single-crystal study|Fikacek jan,Prokleska Jan,Prchal Jiri,Custers Jeroen,Sechovsky Vladimir###
(1510010, 1510010)
,, a superstructure consisting of three unit cells of the CeCoAl-typepiled up along the c<missing VAR>--axis, and in which the Ce3 ions are characterizedby large distances from the Ru ligands while the Ce-Ru distances of the otherCe ions are much shorter causing a strong 4it f<missing VAR>-ligand hybridization andhence leading to tetravalent and/or mixed valence Ce ions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[299.0, 1.5, 'and', 5],[298.0, 0.8, 'T', 5],[257.0, 25, '%', 4]

Ce
###Nature of the magnetic ground state in the mixed valence compound CeRuSn: a single-crystal study|Fikacek jan,Prokleska Jan,Prchal Jiri,Custers Jeroen,Sechovsky Vladimir###
(1510018, 1510018)
,, a superstructure consisting of three unit cells of the CeCoAl-typepiled up along the c<missing VAR>--axis, and in which the Ce3 ions are characterizedby large distances from the Ru ligands while the Ce-Ru distances of the otherCe ions are much shorter causing a strong 4it f<missing VAR>-ligand hybridization andhence leading to tetravalent and/or mixed valence Ce ions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[307.0, 1.5, 'and', 5],[306.0, 0.8, 'T', 5],[265.0, 25, '%', 4]

Ru
###Nature of the magnetic ground state in the mixed valence compound CeRuSn: a single-crystal study|Fikacek jan,Prokleska Jan,Prchal Jiri,Custers Jeroen,Sechovsky Vladimir###
(1510020, 1510020)
,, a superstructure consisting of three unit cells of the CeCoAl-typepiled up along the c<missing VAR>--axis, and in which the Ce3 ions are characterizedby large distances from the Ru ligands while the Ce-Ru distances of the otherCe ions are much shorter causing a strong 4it f<missing VAR>-ligand hybridization andhence leading to tetravalent and/or mixed valence Ce ions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[309.0, 1.5, 'and', 5],[308.0, 0.8, 'T', 5],[267.0, 25, '%', 4]

Ce
###Nature of the magnetic ground state in the mixed valence compound CeRuSn: a single-crystal study|Fikacek jan,Prokleska Jan,Prchal Jiri,Custers Jeroen,Sechovsky Vladimir###
(1510031, 1510031)
,, a superstructure consisting of three unit cells of the CeCoAl-typepiled up along the c<missing VAR>--axis, and in which the Ce3 ions are characterizedby large distances from the Ru ligands while the Ce-Ru distances of the otherCe ions are much shorter causing a strong 4it f<missing VAR>-ligand hybridization andhence leading to tetravalent and/or mixed valence Ce ions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[320.0, 1.5, 'and', 5],[319.0, 0.8, 'T', 5],[278.0, 25, '%', 4]

Ce
###Nature of the magnetic ground state in the mixed valence compound CeRuSn: a single-crystal study|Fikacek jan,Prokleska Jan,Prchal Jiri,Custers Jeroen,Sechovsky Vladimir###
(1510075, 1510075)
,, a superstructure consisting of three unit cells of the CeCoAl-typepiled up along the c<missing VAR>--axis, and in which the Ce3 ions are characterizedby large distances from the Ru ligands while the Ce-Ru distances of the otherCe ions are much shorter causing a strong 4it f<missing VAR>-ligand hybridization andhence leading to tetravalent and/or mixed valence Ce ions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[364.0, 1.5, 'and', 5],[363.0, 0.8, 'T', 5],[322.0, 25, '%', 4]

In
###Bias dependence of tunneling magnetoresistance in magnetic tunnel junctions with asymmetric barriers|Alan Kalitsov,Pierre-Jean Zermatten,Frédéric Bonell,Gilles Gaudin,Stéphane Andrieu,Coriolan Tiusan,Mairbek Chshiev,Julian P. Velev###
(1510147, 1510147)
 In this work we investigate bothexperimentally and theoretically the effect of asymmetric barrier modificationson the bias dependence of tunneling magnetoresistance (TMR) in single crystalFe/MgO-based MTJs with (i) one crystalline and one rough interface and (ii)with a monolayer of O deposited at the crystalline interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/MgO
###Bias dependence of tunneling magnetoresistance in magnetic tunnel junctions with asymmetric barriers|Alan Kalitsov,Pierre-Jean Zermatten,Frédéric Bonell,Gilles Gaudin,Stéphane Andrieu,Coriolan Tiusan,Mairbek Chshiev,Julian P. Velev###
(1510206, 1510209)
 In this work we investigate bothexperimentally and theoretically the effect of asymmetric barrier modificationson the bias dependence of tunneling magnetoresistance (TMR) in single crystalFe/MgO-based MTJs with (i) one crystalline and one rough interface and (ii)with a monolayer of O deposited at the crystalline interface.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

O
###Bias dependence of tunneling magnetoresistance in magnetic tunnel junctions with asymmetric barriers|Alan Kalitsov,Pierre-Jean Zermatten,Frédéric Bonell,Gilles Gaudin,Stéphane Andrieu,Coriolan Tiusan,Mairbek Chshiev,Julian P. Velev###
(1510250, 1510250)
 In this work we investigate bothexperimentally and theoretically the effect of asymmetric barrier modificationson the bias dependence of tunneling magnetoresistance (TMR) in single crystalFe/MgO-based MTJs with (i) one crystalline and one rough interface and (ii)with a monolayer of O deposited at the crystalline interface.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Bias dependence of tunneling magnetoresistance in magnetic tunnel junctions with asymmetric barriers|Alan Kalitsov,Pierre-Jean Zermatten,Frédéric Bonell,Gilles Gaudin,Stéphane Andrieu,Coriolan Tiusan,Mairbek Chshiev,Julian P. Velev###
(1510263, 1510263)
 In both cases weobserve an asymmetric bias dependence of TMR and a reversal of its sign atlarge bias.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Bias dependence of tunneling magnetoresistance in magnetic tunnel junctions with asymmetric barriers|Alan Kalitsov,Pierre-Jean Zermatten,Frédéric Bonell,Gilles Gaudin,Stéphane Andrieu,Coriolan Tiusan,Mairbek Chshiev,Julian P. Velev###
(1510511, 1510511)
 In the resonant regime inversionof TMR could happen at zero voltage depending on the alignment of the resonancelevels with the Fermi surfaces of the electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cd3As2
###Observation of a topological 3D Dirac semimetal phase in high-mobility Cd3As2|Madhab Neupane,SuYang Xu,R. Sankar,N. Alidoust,G. Bian,Chang Liu,I. Belopolski,T. -R. Chang,H. -T. Jeng,H. Lin,A. Bansil,Fangcheng Chou,M. Zahid Hasan###
(1510655, 1510658)
Observation of a topological 3D Dirac semimetal phase in high-mobility Cd3As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 3, 'D', 0],[186.0, 3, 'D', 3],[264.0, 40, ',', 4],[355.0, 3, 'D', 6],[370.0, 3, 'D', 6]

Cd3As2
###Observation of a topological 3D Dirac semimetal phase in high-mobility Cd3As2|Madhab Neupane,SuYang Xu,R. Sankar,N. Alidoust,G. Bian,Chang Liu,I. Belopolski,T. -R. Chang,H. -T. Jeng,H. Lin,A. Bansil,Fangcheng Chou,M. Zahid Hasan###
(1510778, 1510781)
 Using high resolutionangle-resolved photoemission spectroscopy, we performed systematic electronicstructure studies on well-known compound Cd3As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 3, 'D', 2],[63.0, 3, 'D', 1],[141.0, 40, ',', 2],[232.0, 3, 'D', 4],[247.0, 3, 'D', 4]

Cd3As2
###Observation of a topological 3D Dirac semimetal phase in high-mobility Cd3As2|Madhab Neupane,SuYang Xu,R. Sankar,N. Alidoust,G. Bian,Chang Liu,I. Belopolski,T. -R. Chang,H. -T. Jeng,H. Lin,A. Bansil,Fangcheng Chou,M. Zahid Hasan###
(1510855, 1510858)
 For the first time, we observea highly linear bulk Dirac cone located at the Brillouin zone center projectedonto the (001) surface which is consistent with a 3D Dirac semimetal phase inCd3As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[214.0, 3, 'D', 3],[11.0, 3, 'D', 0],[64.0, 40, ',', 1],[155.0, 3, 'D', 3],[170.0, 3, 'D', 3]

V
###Observation of a topological 3D Dirac semimetal phase in high-mobility Cd3As2|Madhab Neupane,SuYang Xu,R. Sankar,N. Alidoust,G. Bian,Chang Liu,I. Belopolski,T. -R. Chang,H. -T. Jeng,H. Lin,A. Bansil,Fangcheng Chou,M. Zahid Hasan###
(1510888, 1510888)
 Remarkably, an unusually high Dirac Fermion velocity up to 10.2textrmAAcdote<missing VAR>V (1.5 times 106 ms-1) is seen in samples where themobility far exceeds 40,000 cm2/V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[247.0, 3, 'D', 4],[44.0, 3, 'D', 1],[34.0, 40, ',', 0],[125.0, 3, 'D', 2],[140.0, 3, 'D', 2]

V
###Observation of a topological 3D Dirac semimetal phase in high-mobility Cd3As2|Madhab Neupane,SuYang Xu,R. Sankar,N. Alidoust,G. Bian,Chang Liu,I. Belopolski,T. -R. Chang,H. -T. Jeng,H. Lin,A. Bansil,Fangcheng Chou,M. Zahid Hasan###
(1510929, 1510929)
 Remarkably, an unusually high Dirac Fermion velocity up to 10.2textrmAAcdote<missing VAR>V (1.5 times 106 ms-1) is seen in samples where themobility far exceeds 40,000 cm2/V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[288.0, 3, 'D', 4],[85.0, 3, 'D', 1],[7.0, 40, ',', 0],[84.0, 3, 'D', 2],[99.0, 3, 'D', 2]

Cd3As2
###Observation of a topological 3D Dirac semimetal phase in high-mobility Cd3As2|Madhab Neupane,SuYang Xu,R. Sankar,N. Alidoust,G. Bian,Chang Liu,I. Belopolski,T. -R. Chang,H. -T. Jeng,H. Lin,A. Bansil,Fangcheng Chou,M. Zahid Hasan###
(1510937, 1510940)
s<missing VAR> suggesting that Cd3As2 can be a promisingcandidate as a hypercone analog of graphene in many device-applications whichcan also incorporate topological quantum phenomena in a large gap setting.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[296.0, 3, 'D', 5],[93.0, 3, 'D', 2],[15.0, 40, ',', 1],[73.0, 3, 'D', 1],[88.0, 3, 'D', 1]

S
###Topological insulator based spin valve devices: evidence for spin polarized transport of spin-momentum-locked topological surface states|Jifa Tian,Isaac Childres,Helin Cao,Shen Tian,Ireneusz Miotkowski,Yong P. Chen###
(1511177, 1511177)
 Spin-momentum helical locking is one of the most important properties of thenontrivial topological surface states (T<missing VAR>SS) in 3D topological insulators (T<missing VAR>I).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 3, 'D', 0],[261.0, 3, 'D', 6]

I
###Topological insulator based spin valve devices: evidence for spin polarized transport of spin-momentum-locked topological surface states|Jifa Tian,Isaac Childres,Helin Cao,Shen Tian,Ireneusz Miotkowski,Yong P. Chen###
(1511189, 1511189)
 Spin-momentum helical locking is one of the most important properties of thenontrivial topological surface states (T<missing VAR>SS) in 3D topological insulators (T<missing VAR>I).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 3, 'D', 0],[249.0, 3, 'D', 6]

SS
###Topological insulator based spin valve devices: evidence for spin polarized transport of spin-momentum-locked topological surface states|Jifa Tian,Isaac Childres,Helin Cao,Shen Tian,Ireneusz Miotkowski,Yong P. Chen###
(1511218, 1511219)
It underlies the iconic topological protection (suppressing elasticbackscattering) of T<missing VAR>SS and is foundational to many exotic physics (eg.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 3, 'D', 1],[219.0, 3, 'D', 5]

I
###Topological insulator based spin valve devices: evidence for spin polarized transport of spin-momentum-locked topological surface states|Jifa Tian,Isaac Childres,Helin Cao,Shen Tian,Ireneusz Miotkowski,Yong P. Chen###
(1511300, 1511300)
 Based on this spin-momentum locking, a current flowing on the surface of aT<missing VAR>I would be spin-polarized in a characteristic in-plane direction perpendicularto the current, and the spin-polarization would reverse when the currentdirection reverses.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 3, 'D', 4],[138.0, 3, 'D', 2]

I
###Topological insulator based spin valve devices: evidence for spin polarized transport of spin-momentum-locked topological surface states|Jifa Tian,Isaac Childres,Helin Cao,Shen Tian,Ireneusz Miotkowski,Yong P. Chen###
(1511386, 1511386)
 Observing such a spin-helical current in transportmeasurements is a major goal in T<missing VAR>I research and applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, 3, 'D', 5],[52.0, 3, 'D', 1]

Bi2Se3
###Topological insulator based spin valve devices: evidence for spin polarized transport of spin-momentum-locked topological surface states|Jifa Tian,Isaac Childres,Helin Cao,Shen Tian,Ireneusz Miotkowski,Yong P. Chen###
(1511429, 1511432)
 We reportspin-dependent transport measurements in spin valve devices fabricated fromexfoliated thin flakes of Bi2Se3 (a prototype 3D T<missing VAR>I) with ferromagnetic (FM) Nicontacts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[248.0, 3, 'D', 6],[6.0, 3, 'D', 0]

I
###Topological insulator based spin valve devices: evidence for spin polarized transport of spin-momentum-locked topological surface states|Jifa Tian,Isaac Childres,Helin Cao,Shen Tian,Ireneusz Miotkowski,Yong P. Chen###
(1511441, 1511441)
 We reportspin-dependent transport measurements in spin valve devices fabricated fromexfoliated thin flakes of Bi2Se3 (a prototype 3D T<missing VAR>I) with ferromagnetic (FM) Nicontacts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[260.0, 3, 'D', 6],[3.0, 3, 'D', 0]

F
###Topological insulator based spin valve devices: evidence for spin polarized transport of spin-momentum-locked topological surface states|Jifa Tian,Isaac Childres,Helin Cao,Shen Tian,Ireneusz Miotkowski,Yong P. Chen###
(1511449, 1511449)
 We reportspin-dependent transport measurements in spin valve devices fabricated fromexfoliated thin flakes of Bi2Se3 (a prototype 3D T<missing VAR>I) with ferromagnetic (FM) Nicontacts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[268.0, 3, 'D', 6],[11.0, 3, 'D', 0]

Ni
###Topological insulator based spin valve devices: evidence for spin polarized transport of spin-momentum-locked topological surface states|Jifa Tian,Isaac Childres,Helin Cao,Shen Tian,Ireneusz Miotkowski,Yong P. Chen###
(1511453, 1511453)
 We reportspin-dependent transport measurements in spin valve devices fabricated fromexfoliated thin flakes of Bi2Se3 (a prototype 3D T<missing VAR>I) with ferromagnetic (FM) Nicontacts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[272.0, 3, 'D', 6],[15.0, 3, 'D', 0]

(B)
###Topological insulator based spin valve devices: evidence for spin polarized transport of spin-momentum-locked topological surface states|Jifa Tian,Isaac Childres,Helin Cao,Shen Tian,Ireneusz Miotkowski,Yong P. Chen###
(1511469, 1511471)
 Applying an in-plane magnetic (B) field to polarize the Ni contactsalong their easy axis, we observe an asymmetry in the hystereticmagnetoresistance (MR) between opposite B field directions.
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[288.0, 3, 'D', 7],[31.0, 3, 'D', 1]

Ni
###Topological insulator based spin valve devices: evidence for spin polarized transport of spin-momentum-locked topological surface states|Jifa Tian,Isaac Childres,Helin Cao,Shen Tian,Ireneusz Miotkowski,Yong P. Chen###
(1511481, 1511481)
 Applying an in-plane magnetic (B) field to polarize the Ni contactsalong their easy axis, we observe an asymmetry in the hystereticmagnetoresistance (MR) between opposite B field directions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[300.0, 3, 'D', 7],[43.0, 3, 'D', 1]

B
###Topological insulator based spin valve devices: evidence for spin polarized transport of spin-momentum-locked topological surface states|Jifa Tian,Isaac Childres,Helin Cao,Shen Tian,Ireneusz Miotkowski,Yong P. Chen###
(1511521, 1511521)
 Applying an in-plane magnetic (B) field to polarize the Ni contactsalong their easy axis, we observe an asymmetry in the hystereticmagnetoresistance (MR) between opposite B field directions.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[340.0, 3, 'D', 7],[83.0, 3, 'D', 1]

C
###Topological insulator based spin valve devices: evidence for spin polarized transport of spin-momentum-locked topological surface states|Jifa Tian,Isaac Childres,Helin Cao,Shen Tian,Ireneusz Miotkowski,Yong P. Chen###
(1511563, 1511563)
 The polarity of theasymmetry in MR can be reversed by reversing the direction of the D<missing VAR>C current.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[382.0, 3, 'D', 8],[125.0, 3, 'D', 2]

I
###Topological insulator based spin valve devices: evidence for spin polarized transport of spin-momentum-locked topological surface states|Jifa Tian,Isaac Childres,Helin Cao,Shen Tian,Ireneusz Miotkowski,Yong P. Chen###
(1511612, 1511612)
The observed asymmetric MR can be understood as a spin-valve effect between thecurrent-induced spin polarization on the T<missing VAR>I surface (due tospin-momentum-locking of T<missing VAR>SS) and the spin-polarized ferromagnetic contacts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[431.0, 3, 'D', 9],[174.0, 3, 'D', 3]

S
###Topological insulator based spin valve devices: evidence for spin polarized transport of spin-momentum-locked topological surface states|Jifa Tian,Isaac Childres,Helin Cao,Shen Tian,Ireneusz Miotkowski,Yong P. Chen###
(1511632, 1511632)
The observed asymmetric MR can be understood as a spin-valve effect between thecurrent-induced spin polarization on the T<missing VAR>I surface (due tospin-momentum-locking of T<missing VAR>SS) and the spin-polarized ferromagnetic contacts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[451.0, 3, 'D', 9],[194.0, 3, 'D', 3]

SS
###Topological insulator based spin valve devices: evidence for spin polarized transport of spin-momentum-locked topological surface states|Jifa Tian,Isaac Childres,Helin Cao,Shen Tian,Ireneusz Miotkowski,Yong P. Chen###
(1511677, 1511678)
Our results provide a direct transport evidence for the spin helical current inT<missing VAR>SS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[496.0, 3, 'D', 10],[239.0, 3, 'D', 4]

Sr3Ru2O7
###Local noncentrosymmetricity and possible spin-momentum locking in Sr$_3$Ru$_2$O$_7$|Chenyi Shen,Hui Xing,Xinxin Cai,David Fobes,Mingliang Tian,Zhi-Qiang Mao,Zhuan Xu,Ying Liu###
(1511705, 1511710)
Local noncentrosymmetricity and possible spin-momentum locking in Sr3Ru2O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[263.0, 1, 'a', 5]

(SOC)
###Local noncentrosymmetricity and possible spin-momentum locking in Sr$_3$Ru$_2$O$_7$|Chenyi Shen,Hui Xing,Xinxin Cai,David Fobes,Mingliang Tian,Zhi-Qiang Mao,Zhuan Xu,Ying Liu###
(1511721, 1511725)
 Strong spin-orbital coupling (SOC) was found previously to lead to dramaticeffects in quantum materials, such as those found in topological insulators.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[248.0, 1, 'a', 4]

RuO6
###Local noncentrosymmetricity and possible spin-momentum locking in Sr$_3$Ru$_2$O$_7$|Chenyi Shen,Hui Xing,Xinxin Cai,David Fobes,Mingliang Tian,Zhi-Qiang Mao,Zhuan Xu,Ying Liu###
(1511792, 1511794)
 Itwas shown theoretically that local noncentrosymmetricity resulting from therotation of RuO6 octahedral in Sr3Ru2O7 will also give rise to aneffective SOCciteSocSr327,MicroscopicnematicSr327.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 1, 'a', 3]

Sr3Ru2O7
###Local noncentrosymmetricity and possible spin-momentum locking in Sr$_3$Ru$_2$O$_7$|Chenyi Shen,Hui Xing,Xinxin Cai,David Fobes,Mingliang Tian,Zhi-Qiang Mao,Zhuan Xu,Ying Liu###
(1511800, 1511805)
 Itwas shown theoretically that local noncentrosymmetricity resulting from therotation of RuO6 octahedral in Sr3Ru2O7 will also give rise to aneffective SOCciteSocSr327,MicroscopicnematicSr327.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[168.0, 1, 'a', 3]

SOC
###Local noncentrosymmetricity and possible spin-momentum locking in Sr$_3$Ru$_2$O$_7$|Chenyi Shen,Hui Xing,Xinxin Cai,David Fobes,Mingliang Tian,Zhi-Qiang Mao,Zhuan Xu,Ying Liu###
(1511822, 1511824)
 Itwas shown theoretically that local noncentrosymmetricity resulting from therotation of RuO6 octahedral in Sr3Ru2O7 will also give rise to aneffective SOCciteSocSr327,MicroscopicnematicSr327.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 1, 'a', 3]

Sr327
###Local noncentrosymmetricity and possible spin-momentum locking in Sr$_3$Ru$_2$O$_7$|Chenyi Shen,Hui Xing,Xinxin Cai,David Fobes,Mingliang Tian,Zhi-Qiang Mao,Zhuan Xu,Ying Liu###
(1511827, 1511828)
 Itwas shown theoretically that local noncentrosymmetricity resulting from therotation of RuO6 octahedral in Sr3Ru2O7 will also give rise to aneffective SOCciteSocSr327,MicroscopicnematicSr327.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 1, 'a', 3]

Sr327
###Local noncentrosymmetricity and possible spin-momentum locking in Sr$_3$Ru$_2$O$_7$|Chenyi Shen,Hui Xing,Xinxin Cai,David Fobes,Mingliang Tian,Zhi-Qiang Mao,Zhuan Xu,Ying Liu###
(1511831, 1511832)
 Itwas shown theoretically that local noncentrosymmetricity resulting from therotation of RuO6 octahedral in Sr3Ru2O7 will also give rise to aneffective SOCciteSocSr327,MicroscopicnematicSr327.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 1, 'a', 3]

In
###Local noncentrosymmetricity and possible spin-momentum locking in Sr$_3$Ru$_2$O$_7$|Chenyi Shen,Hui Xing,Xinxin Cai,David Fobes,Mingliang Tian,Zhi-Qiang Mao,Zhuan Xu,Ying Liu###
(1511835, 1511835)
 In the presence of amagnetic field applied along a specific in-plane direction, the Fermi surfacewas predicted to undergo a reconstruction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 1, 'a', 2]

Sr3Ru2O7
###Local noncentrosymmetricity and possible spin-momentum locking in Sr$_3$Ru$_2$O$_7$|Chenyi Shen,Hui Xing,Xinxin Cai,David Fobes,Mingliang Tian,Zhi-Qiang Mao,Zhuan Xu,Ying Liu###
(1511919, 1511924)
 Here we report results of ourin-plane magnetoresistivity and magnetothermopower measurements on singlecrystals of Sr3Ru2O7 with an electrical or a thermal current appliedalong specific crystalline directions and a magnetic field rotating in the abplane (Fig.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 1, 'a', 1]

Sr3Ru2O7
###Local noncentrosymmetricity and possible spin-momentum locking in Sr$_3$Ru$_2$O$_7$|Chenyi Shen,Hui Xing,Xinxin Cai,David Fobes,Mingliang Tian,Zhi-Qiang Mao,Zhuan Xu,Ying Liu###
(1512077, 1512082)
 Furthermore, the thermopower, andtherefore, the electron entropy, were found to be suppressed as the field wasapplied perpendicular to the thermal current, which suggests that the spin andthe momentum in Sr3Ru2O7 are locked over substantial parts of theFermi surface, likely originating from local noncentrosymmetricity as well.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 1, 'a', 1]

TaAs
###Discovery of a Weyl Semimetal in non-Centrosymmetric Compound TaAs|Lexian Yang,Zhongkai Liu,Yan Sun,Han Peng,Haifeng Yang,Teng Zhang,Bo Zhou,Yi Zhang,Yanfeng Guo,Marein Rahn,Dharmalingam Prabhakaran,Zahid Hussain,Sung-Kwan Mo,Claudia Felser,Binghai Yan,Yulin Chen###
(1512145, 1512146)
Discovery of a Weyl Semimetal in non-Centrosymmetric Compound TaAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[313.0, 3, 'D', 4]

W
###Discovery of a Weyl Semimetal in non-Centrosymmetric Compound TaAs|Lexian Yang,Zhongkai Liu,Yan Sun,Han Peng,Haifeng Yang,Teng Zhang,Bo Zhou,Yi Zhang,Yanfeng Guo,Marein Rahn,Dharmalingam Prabhakaran,Zahid Hussain,Sung-Kwan Mo,Claudia Felser,Binghai Yan,Yulin Chen###
(1512166, 1512166)
 Three-dimensional (3D) topological Weyl semimetals (T<missing VAR>WSs) represent a novelstate of quantum matter with unusual electronic structures that resemble both a3D<missing VAR> graphene and a topological insulator by possessing pairs of Weyl points(through which the electronic bands disperse linearly along all three momentumdirections) connected by topological surface states, forming the uniqueFermi-arc type Fermi-surface (FS).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[293.0, 3, 'D', 3]

(FS)
###Discovery of a Weyl Semimetal in non-Centrosymmetric Compound TaAs|Lexian Yang,Zhongkai Liu,Yan Sun,Han Peng,Haifeng Yang,Teng Zhang,Bo Zhou,Yi Zhang,Yanfeng Guo,Marein Rahn,Dharmalingam Prabhakaran,Zahid Hussain,Sung-Kwan Mo,Claudia Felser,Binghai Yan,Yulin Chen###
(1512283, 1512286)
 Three-dimensional (3D) topological Weyl semimetals (T<missing VAR>WSs) represent a novelstate of quantum matter with unusual electronic structures that resemble both a3D<missing VAR> graphene and a topological insulator by possessing pairs of Weyl points(through which the electronic bands disperse linearly along all three momentumdirections) connected by topological surface states, forming the uniqueFermi-arc type Fermi-surface (FS).
Featurization successful!
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 3, 'D', 3]

TaAs
###Discovery of a Weyl Semimetal in non-Centrosymmetric Compound TaAs|Lexian Yang,Zhongkai Liu,Yan Sun,Han Peng,Haifeng Yang,Teng Zhang,Bo Zhou,Yi Zhang,Yanfeng Guo,Marein Rahn,Dharmalingam Prabhakaran,Zahid Hussain,Sung-Kwan Mo,Claudia Felser,Binghai Yan,Yulin Chen###
(1512375, 1512376)
 Here, by performing angle-resolvedphotoemission spectroscopy on non-centrosymmetric compound TaAs, we observedits complete band structures including the unique Fermi-arc FS and linearbulk band dispersion across the Weyl points, in excellent agreement with thetheoretical calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 3, 'D', 1]

FS
###Discovery of a Weyl Semimetal in non-Centrosymmetric Compound TaAs|Lexian Yang,Zhongkai Liu,Yan Sun,Han Peng,Haifeng Yang,Teng Zhang,Bo Zhou,Yi Zhang,Yanfeng Guo,Marein Rahn,Dharmalingam Prabhakaran,Zahid Hussain,Sung-Kwan Mo,Claudia Felser,Binghai Yan,Yulin Chen###
(1512402, 1512403)
 Here, by performing angle-resolvedphotoemission spectroscopy on non-centrosymmetric compound TaAs, we observedits complete band structures including the unique Fermi-arc FS and linearbulk band dispersion across the Weyl points, in excellent agreement with thetheoretical calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 3, 'D', 1]

TaAs
###Discovery of a Weyl Semimetal in non-Centrosymmetric Compound TaAs|Lexian Yang,Zhongkai Liu,Yan Sun,Han Peng,Haifeng Yang,Teng Zhang,Bo Zhou,Yi Zhang,Yanfeng Guo,Marein Rahn,Dharmalingam Prabhakaran,Zahid Hussain,Sung-Kwan Mo,Claudia Felser,Binghai Yan,Yulin Chen###
(1512451, 1512452)
 This discovery not only confirms TaAs as the first 3DT<missing VAR>WS, but also provides an ideal platform for realizing exotic physicalphenomena (e.g.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 3, 'D', 0]

WS
###Discovery of a Weyl Semimetal in non-Centrosymmetric Compound TaAs|Lexian Yang,Zhongkai Liu,Yan Sun,Han Peng,Haifeng Yang,Teng Zhang,Bo Zhou,Yi Zhang,Yanfeng Guo,Marein Rahn,Dharmalingam Prabhakaran,Zahid Hussain,Sung-Kwan Mo,Claudia Felser,Binghai Yan,Yulin Chen###
(1512463, 1512464)
 This discovery not only confirms TaAs as the first 3DT<missing VAR>WS, but also provides an ideal platform for realizing exotic physicalphenomena (e.g.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 3, 'D', 0]

V
###Hopping magnetoresistance in ion irradiated monolayer graphene|I. Shlimak,E. Zion,A. V. Butenko,L. Wolfson,V. Richter,Yu. Kaganovskii,A. Sharoni,A. Haran,D. Naveh,E. Kogan,M. Kaveh###
(1512588, 1512588)
 Magnetoresistance (MR) of ion irradiated monolayer graphene samples withvariable-range hopping (VR<missing VAR>H) mechanism of conductivity was measured attemperatures down to T<missing VAR>  1.8 K in magnetic fields up to B  8 T<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Hopping magnetoresistance in ion irradiated monolayer graphene|I. Shlimak,E. Zion,A. V. Butenko,L. Wolfson,V. Richter,Yu. Kaganovskii,A. Sharoni,A. Haran,D. Naveh,E. Kogan,M. Kaveh###
(1512590, 1512590)
 Magnetoresistance (MR) of ion irradiated monolayer graphene samples withvariable-range hopping (VR<missing VAR>H) mechanism of conductivity was measured attemperatures down to T<missing VAR>  1.8 K in magnetic fields up to B  8 T<missing VAR>.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Hopping magnetoresistance in ion irradiated monolayer graphene|I. Shlimak,E. Zion,A. V. Butenko,L. Wolfson,V. Richter,Yu. Kaganovskii,A. Sharoni,A. Haran,D. Naveh,E. Kogan,M. Kaveh###
(1512617, 1512617)
 Magnetoresistance (MR) of ion irradiated monolayer graphene samples withvariable-range hopping (VR<missing VAR>H) mechanism of conductivity was measured attemperatures down to T<missing VAR>  1.8 K in magnetic fields up to B  8 T<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Hopping magnetoresistance in ion irradiated monolayer graphene|I. Shlimak,E. Zion,A. V. Butenko,L. Wolfson,V. Richter,Yu. Kaganovskii,A. Sharoni,A. Haran,D. Naveh,E. Kogan,M. Kaveh###
(1512629, 1512629)
 Magnetoresistance (MR) of ion irradiated monolayer graphene samples withvariable-range hopping (VR<missing VAR>H) mechanism of conductivity was measured attemperatures down to T<missing VAR>  1.8 K in magnetic fields up to B  8 T<missing VAR>.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Hopping magnetoresistance in ion irradiated monolayer graphene|I. Shlimak,E. Zion,A. V. Butenko,L. Wolfson,V. Richter,Yu. Kaganovskii,A. Sharoni,A. Haran,D. Naveh,E. Kogan,M. Kaveh###
(1512677, 1512677)
 It wasobserved that in perpendicular magnetic fields, hopping resistivity R<missing VAR>decreases, which corresponds to negative MR (NMR), while parallel magneticfield results in positive MR (PMR) at low temperatures.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Hopping magnetoresistance in ion irradiated monolayer graphene|I. Shlimak,E. Zion,A. V. Butenko,L. Wolfson,V. Richter,Yu. Kaganovskii,A. Sharoni,A. Haran,D. Naveh,E. Kogan,M. Kaveh###
(1512702, 1512702)
 It wasobserved that in perpendicular magnetic fields, hopping resistivity R<missing VAR>decreases, which corresponds to negative MR (NMR), while parallel magneticfield results in positive MR (PMR) at low temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Hopping magnetoresistance in ion irradiated monolayer graphene|I. Shlimak,E. Zion,A. V. Butenko,L. Wolfson,V. Richter,Yu. Kaganovskii,A. Sharoni,A. Haran,D. Naveh,E. Kogan,M. Kaveh###
(1512714, 1512714)
 NMR is explained on thebasis of the orbital model in which perpendicular magnetic field suppressesthe destructive interference of many paths through the intermediate sites inthe total probability of the long-distance tunneling in the VR<missing VAR>H regime.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Hopping magnetoresistance in ion irradiated monolayer graphene|I. Shlimak,E. Zion,A. V. Butenko,L. Wolfson,V. Richter,Yu. Kaganovskii,A. Sharoni,A. Haran,D. Naveh,E. Kogan,M. Kaveh###
(1512793, 1512793)
 NMR is explained on thebasis of the orbital model in which perpendicular magnetic field suppressesthe destructive interference of many paths through the intermediate sites inthe total probability of the long-distance tunneling in the VR<missing VAR>H regime.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Hopping magnetoresistance in ion irradiated monolayer graphene|I. Shlimak,E. Zion,A. V. Butenko,L. Wolfson,V. Richter,Yu. Kaganovskii,A. Sharoni,A. Haran,D. Naveh,E. Kogan,M. Kaveh###
(1512795, 1512795)
 NMR is explained on thebasis of the orbital model in which perpendicular magnetic field suppressesthe destructive interference of many paths through the intermediate sites inthe total probability of the long-distance tunneling in the VR<missing VAR>H regime.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Hopping magnetoresistance in ion irradiated monolayer graphene|I. Shlimak,E. Zion,A. V. Butenko,L. Wolfson,V. Richter,Yu. Kaganovskii,A. Sharoni,A. Haran,D. Naveh,E. Kogan,M. Kaveh###
(1512800, 1512800)
 At lowfields, a quadratic dependence (Delta R/Rsim B2) of NMR is observed,while at B > B, the quadratic dependence is replaced by the linear one.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B2
###Hopping magnetoresistance in ion irradiated monolayer graphene|I. Shlimak,E. Zion,A. V. Butenko,L. Wolfson,V. Richter,Yu. Kaganovskii,A. Sharoni,A. Haran,D. Naveh,E. Kogan,M. Kaveh###
(1512822, 1512823)
 At lowfields, a quadratic dependence (Delta R/Rsim B2) of NMR is observed,while at B > B, the quadratic dependence is replaced by the linear one.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Hopping magnetoresistance in ion irradiated monolayer graphene|I. Shlimak,E. Zion,A. V. Butenko,L. Wolfson,V. Richter,Yu. Kaganovskii,A. Sharoni,A. Haran,D. Naveh,E. Kogan,M. Kaveh###
(1512828, 1512828)
 At lowfields, a quadratic dependence (Delta R/Rsim B2) of NMR is observed,while at B > B, the quadratic dependence is replaced by the linear one.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Hopping magnetoresistance in ion irradiated monolayer graphene|I. Shlimak,E. Zion,A. V. Butenko,L. Wolfson,V. Richter,Yu. Kaganovskii,A. Sharoni,A. Haran,D. Naveh,E. Kogan,M. Kaveh###
(1512842, 1512842)
 At lowfields, a quadratic dependence (Delta R/Rsim B2) of NMR is observed,while at B > B, the quadratic dependence is replaced by the linear one.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Hopping magnetoresistance in ion irradiated monolayer graphene|I. Shlimak,E. Zion,A. V. Butenko,L. Wolfson,V. Richter,Yu. Kaganovskii,A. Sharoni,A. Haran,D. Naveh,E. Kogan,M. Kaveh###
(1512846, 1512846)
 At lowfields, a quadratic dependence (Delta R/Rsim B2) of NMR is observed,while at B > B, the quadratic dependence is replaced by the linear one.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Hopping magnetoresistance in ion irradiated monolayer graphene|I. Shlimak,E. Zion,A. V. Butenko,L. Wolfson,V. Richter,Yu. Kaganovskii,A. Sharoni,A. Haran,D. Naveh,E. Kogan,M. Kaveh###
(1512879, 1512879)
 Itwas found that all NMR curves for different samples and different temperaturescould be merged into common dependence when plotted as a function of B/B.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B/B
###Hopping magnetoresistance in ion irradiated monolayer graphene|I. Shlimak,E. Zion,A. V. Butenko,L. Wolfson,V. Richter,Yu. Kaganovskii,A. Sharoni,A. Haran,D. Naveh,E. Kogan,M. Kaveh###
(1512922, 1512924)
 Itwas found that all NMR curves for different samples and different temperaturescould be merged into common dependence when plotted as a function of B/B.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

B
###Hopping magnetoresistance in ion irradiated monolayer graphene|I. Shlimak,E. Zion,A. V. Butenko,L. Wolfson,V. Richter,Yu. Kaganovskii,A. Sharoni,A. Haran,D. Naveh,E. Kogan,M. Kaveh###
(1512936, 1512936)
It is shown that Bsim T<missing VAR>1/2 in agreement with predictions of theorbital model.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Hopping magnetoresistance in ion irradiated monolayer graphene|I. Shlimak,E. Zion,A. V. Butenko,L. Wolfson,V. Richter,Yu. Kaganovskii,A. Sharoni,A. Haran,D. Naveh,E. Kogan,M. Kaveh###
(1512970, 1512970)
 The obtained values of B allowed also to estimate thelocalization radius xi of charge carriers for samples with different degreeof disorder.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Hopping magnetoresistance in ion irradiated monolayer graphene|I. Shlimak,E. Zion,A. V. Butenko,L. Wolfson,V. Richter,Yu. Kaganovskii,A. Sharoni,A. Haran,D. Naveh,E. Kogan,M. Kaveh###
(1513011, 1513011)
 PMR in parallel magnetic fields is explained by suppression ofhopping transitions via double occupied states due to alignment of electronspins.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TaP
###Unsaturated both large positive and negative magnetoresistance in Weyl Semimetal TaP|Jianhua Du,Hangdong Wang,Qianhui Mao,Rajwali Khan,Binjie Xu,Yuxing Zhou,Yannan Zhang,Jinhu Yang,Bin Chen,Chunmu Feng,Minghu Fang###
(1513088, 1513089)
Unsaturated both large positive and negative magnetoresistance in Weyl Semimetal TaP.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 9, 'T', 1],[79.0, 2, 'K', 2],[94.0, 328000, 'percent', 2],[98.0, 300, 'K', 2],[101.0, 176, 'percent', 2],[104.0, 8, 'T', 2],[175.0, -1, ',', 3],[272.0, -3000, 'percent', 4],[275.0, 9, 'T', 4],[362.0, 0.3958, 'realizes', 5]

TaP
###Unsaturated both large positive and negative magnetoresistance in Weyl Semimetal TaP|Jianhua Du,Hangdong Wang,Qianhui Mao,Rajwali Khan,Binjie Xu,Yuxing Zhou,Yannan Zhang,Jinhu Yang,Bin Chen,Chunmu Feng,Minghu Fang###
(1513098, 1513099)
 After growing successfully TaP single crystal, we measured its longitudinalresistivity (rhoxx) and Hall resistivity (rhoyx) at magnetic fields up to 9T inthe temperature range of 2-300K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 9, 'T', 0],[69.0, 2, 'K', 1],[84.0, 328000, 'percent', 1],[88.0, 300, 'K', 1],[91.0, 176, 'percent', 1],[94.0, 8, 'T', 1],[165.0, -1, ',', 2],[262.0, -3000, 'percent', 3],[265.0, 9, 'T', 3],[352.0, 0.3958, 'realizes', 4]

K
###Unsaturated both large positive and negative magnetoresistance in Weyl Semimetal TaP|Jianhua Du,Hangdong Wang,Qianhui Mao,Rajwali Khan,Binjie Xu,Yuxing Zhou,Yannan Zhang,Jinhu Yang,Bin Chen,Chunmu Feng,Minghu Fang###
(1513156, 1513156)
 After growing successfully TaP single crystal, we measured its longitudinalresistivity (rhoxx) and Hall resistivity (rhoyx) at magnetic fields up to 9T inthe temperature range of 2-300K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 9, 'T', 0],[12.0, 2, 'K', 1],[27.0, 328000, 'percent', 1],[31.0, 300, 'K', 1],[34.0, 176, 'percent', 1],[37.0, 8, 'T', 1],[108.0, -1, ',', 2],[205.0, -3000, 'percent', 3],[208.0, 9, 'T', 3],[295.0, 0.3958, 'realizes', 4]

TaP
###Unsaturated both large positive and negative magnetoresistance in Weyl Semimetal TaP|Jianhua Du,Hangdong Wang,Qianhui Mao,Rajwali Khan,Binjie Xu,Yuxing Zhou,Yannan Zhang,Jinhu Yang,Bin Chen,Chunmu Feng,Minghu Fang###
(1513216, 1513217)
 We confirmed that TaP is indeed a low carrier concentration,hole-electron compensated semimetal, with a high mobility of hole muh371000cm2V-1s<missing VAR>-1, and found that a magnetic-field-induced metal-insulator transitionoccurs at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 9, 'T', 2],[48.0, 2, 'K', 1],[33.0, 328000, 'percent', 1],[29.0, 300, 'K', 1],[26.0, 176, 'percent', 1],[23.0, 8, 'T', 1],[47.0, -1, ',', 0],[144.0, -3000, 'percent', 1],[147.0, 9, 'T', 1],[234.0, 0.3958, 'realizes', 2]

V
###Unsaturated both large positive and negative magnetoresistance in Weyl Semimetal TaP|Jianhua Du,Hangdong Wang,Qianhui Mao,Rajwali Khan,Binjie Xu,Yuxing Zhou,Yannan Zhang,Jinhu Yang,Bin Chen,Chunmu Feng,Minghu Fang###
(1513260, 1513260)
 We confirmed that TaP is indeed a low carrier concentration,hole-electron compensated semimetal, with a high mobility of hole muh371000cm2V-1s<missing VAR>-1, and found that a magnetic-field-induced metal-insulator transitionoccurs at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 9, 'T', 2],[92.0, 2, 'K', 1],[77.0, 328000, 'percent', 1],[73.0, 300, 'K', 1],[70.0, 176, 'percent', 1],[67.0, 8, 'T', 1],[4.0, -1, ',', 0],[101.0, -3000, 'percent', 1],[104.0, 9, 'T', 1],[191.0, 0.3958, 'realizes', 2]

(H)
###Unsaturated both large positive and negative magnetoresistance in Weyl Semimetal TaP|Jianhua Du,Hangdong Wang,Qianhui Mao,Rajwali Khan,Binjie Xu,Yuxing Zhou,Yannan Zhang,Jinhu Yang,Bin Chen,Chunmu Feng,Minghu Fang###
(1513309, 1513311)
 Remarkably, as a magnetic field (H) is applied inparallel to the electric field (E), the negative MR due to chiral anomaly isobserved, and reaches to -3000 percent at 9T without any signature ofsaturation, too, which distinguishes with other Weyl semimetals (WSMs).
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 9, 'T', 3],[141.0, 2, 'K', 2],[126.0, 328000, 'percent', 2],[122.0, 300, 'K', 2],[119.0, 176, 'percent', 2],[116.0, 8, 'T', 2],[45.0, -1, ',', 1],[50.0, -3000, 'percent', 0],[53.0, 9, 'T', 0],[140.0, 0.3958, 'realizes', 1]

WS
###Unsaturated both large positive and negative magnetoresistance in Weyl Semimetal TaP|Jianhua Du,Hangdong Wang,Qianhui Mao,Rajwali Khan,Binjie Xu,Yuxing Zhou,Yannan Zhang,Jinhu Yang,Bin Chen,Chunmu Feng,Minghu Fang###
(1513394, 1513395)
 Remarkably, as a magnetic field (H) is applied inparallel to the electric field (E), the negative MR due to chiral anomaly isobserved, and reaches to -3000 percent at 9T without any signature ofsaturation, too, which distinguishes with other Weyl semimetals (WSMs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[254.0, 9, 'T', 3],[226.0, 2, 'K', 2],[211.0, 328000, 'percent', 2],[207.0, 300, 'K', 2],[204.0, 176, 'percent', 2],[201.0, 8, 'T', 2],[130.0, -1, ',', 1],[33.0, -3000, 'percent', 0],[30.0, 9, 'T', 0],[56.0, 0.3958, 'realizes', 1]

H
###Unsaturated both large positive and negative magnetoresistance in Weyl Semimetal TaP|Jianhua Du,Hangdong Wang,Qianhui Mao,Rajwali Khan,Binjie Xu,Yuxing Zhou,Yannan Zhang,Jinhu Yang,Bin Chen,Chunmu Feng,Minghu Fang###
(1513417, 1513417)
 Theanalysis on the Shubnikov-de Haas (SdH) oscillations superimposing on the MRreveals that a nontrivial Berry phase with strong offset of 0.3958 realizes inTaP, which is the characteristic feature of the charge carriers enclosing aWeyl nodes.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[277.0, 9, 'T', 4],[249.0, 2, 'K', 3],[234.0, 328000, 'percent', 3],[230.0, 300, 'K', 3],[227.0, 176, 'percent', 3],[224.0, 8, 'T', 3],[153.0, -1, ',', 2],[56.0, -3000, 'percent', 1],[53.0, 9, 'T', 1],[34.0, 0.3958, 'realizes', 0]

TaP
###Unsaturated both large positive and negative magnetoresistance in Weyl Semimetal TaP|Jianhua Du,Hangdong Wang,Qianhui Mao,Rajwali Khan,Binjie Xu,Yuxing Zhou,Yannan Zhang,Jinhu Yang,Bin Chen,Chunmu Feng,Minghu Fang###
(1513456, 1513457)
 Theanalysis on the Shubnikov-de Haas (SdH) oscillations superimposing on the MRreveals that a nontrivial Berry phase with strong offset of 0.3958 realizes inTaP, which is the characteristic feature of the charge carriers enclosing aWeyl nodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[316.0, 9, 'T', 4],[288.0, 2, 'K', 3],[273.0, 328000, 'percent', 3],[269.0, 300, 'K', 3],[266.0, 176, 'percent', 3],[263.0, 8, 'T', 3],[192.0, -1, ',', 2],[95.0, -3000, 'percent', 1],[92.0, 9, 'T', 1],[5.0, 0.3958, 'realizes', 0]

TaP
###Unsaturated both large positive and negative magnetoresistance in Weyl Semimetal TaP|Jianhua Du,Hangdong Wang,Qianhui Mao,Rajwali Khan,Binjie Xu,Yuxing Zhou,Yannan Zhang,Jinhu Yang,Bin Chen,Chunmu Feng,Minghu Fang###
(1513496, 1513497)
 These results indicate that TaP is a promising candidate not onlyfor revealing fundamental physics of the WSM<missing VAR> state but also for some novelapplications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[356.0, 9, 'T', 5],[328.0, 2, 'K', 4],[313.0, 328000, 'percent', 4],[309.0, 300, 'K', 4],[306.0, 176, 'percent', 4],[303.0, 8, 'T', 4],[232.0, -1, ',', 3],[135.0, -3000, 'percent', 2],[132.0, 9, 'T', 2],[45.0, 0.3958, 'realizes', 1]

WS
###Unsaturated both large positive and negative magnetoresistance in Weyl Semimetal TaP|Jianhua Du,Hangdong Wang,Qianhui Mao,Rajwali Khan,Binjie Xu,Yuxing Zhou,Yannan Zhang,Jinhu Yang,Bin Chen,Chunmu Feng,Minghu Fang###
(1513524, 1513525)
 These results indicate that TaP is a promising candidate not onlyfor revealing fundamental physics of the WSM<missing VAR> state but also for some novelapplications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[384.0, 9, 'T', 5],[356.0, 2, 'K', 4],[341.0, 328000, 'percent', 4],[337.0, 300, 'K', 4],[334.0, 176, 'percent', 4],[331.0, 8, 'T', 4],[260.0, -1, ',', 3],[163.0, -3000, 'percent', 2],[160.0, 9, 'T', 2],[73.0, 0.3958, 'realizes', 1]

(C2)
###Twofold and Fourfold Symmetric Anisotropic Magnetoresistance Effect in A Model with Crystal Field|Satoshi Kokado,Masakiyo Tsunoda###
(1513736, 1513739)
 From the model, we firstderive general expressions for the coefficient of the twofold symmetric term(C2) and that of the fourfold symmetric term (C4) in the AMR ratio.
Featurization successful!
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(C4)
###Twofold and Fourfold Symmetric Anisotropic Magnetoresistance Effect in A Model with Crystal Field|Satoshi Kokado,Masakiyo Tsunoda###
(1513755, 1513758)
 From the model, we firstderive general expressions for the coefficient of the twofold symmetric term(C2) and that of the fourfold symmetric term (C4) in the AMR ratio.
Featurization successful!
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Twofold and Fourfold Symmetric Anisotropic Magnetoresistance Effect in A Model with Crystal Field|Satoshi Kokado,Masakiyo Tsunoda###
(1513771, 1513771)
 Inthe case of a strong ferromagnet, the dominant term in C2 is proportional tothe difference in the partial densities of states (PD<missing VAR>OSs) at the Fermi energy(E<missing VAR>rm F) between the d<missing VAR>varepsilon and d<missing VAR>gamma states, and that inC4 is proportional to the difference in the PD<missing VAR>OSs at E<missing VAR>rm F among thed<missing VAR>varepsilon states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C2
###Twofold and Fourfold Symmetric Anisotropic Magnetoresistance Effect in A Model with Crystal Field|Satoshi Kokado,Masakiyo Tsunoda###
(1513795, 1513796)
 Inthe case of a strong ferromagnet, the dominant term in C2 is proportional tothe difference in the partial densities of states (PD<missing VAR>OSs) at the Fermi energy(E<missing VAR>rm F) between the d<missing VAR>varepsilon and d<missing VAR>gamma states, and that inC4 is proportional to the difference in the PD<missing VAR>OSs at E<missing VAR>rm F among thed<missing VAR>varepsilon states.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Twofold and Fourfold Symmetric Anisotropic Magnetoresistance Effect in A Model with Crystal Field|Satoshi Kokado,Masakiyo Tsunoda###
(1513822, 1513822)
 Inthe case of a strong ferromagnet, the dominant term in C2 is proportional tothe difference in the partial densities of states (PD<missing VAR>OSs) at the Fermi energy(E<missing VAR>rm F) between the d<missing VAR>varepsilon and d<missing VAR>gamma states, and that inC4 is proportional to the difference in the PD<missing VAR>OSs at E<missing VAR>rm F among thed<missing VAR>varepsilon states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Twofold and Fourfold Symmetric Anisotropic Magnetoresistance Effect in A Model with Crystal Field|Satoshi Kokado,Masakiyo Tsunoda###
(1513824, 1513824)
 Inthe case of a strong ferromagnet, the dominant term in C2 is proportional tothe difference in the partial densities of states (PD<missing VAR>OSs) at the Fermi energy(E<missing VAR>rm F) between the d<missing VAR>varepsilon and d<missing VAR>gamma states, and that inC4 is proportional to the difference in the PD<missing VAR>OSs at E<missing VAR>rm F among thed<missing VAR>varepsilon states.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Twofold and Fourfold Symmetric Anisotropic Magnetoresistance Effect in A Model with Crystal Field|Satoshi Kokado,Masakiyo Tsunoda###
(1513841, 1513841)
 Inthe case of a strong ferromagnet, the dominant term in C2 is proportional tothe difference in the partial densities of states (PD<missing VAR>OSs) at the Fermi energy(E<missing VAR>rm F) between the d<missing VAR>varepsilon and d<missing VAR>gamma states, and that inC4 is proportional to the difference in the PD<missing VAR>OSs at E<missing VAR>rm F among thed<missing VAR>varepsilon states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C4
###Twofold and Fourfold Symmetric Anisotropic Magnetoresistance Effect in A Model with Crystal Field|Satoshi Kokado,Masakiyo Tsunoda###
(1513866, 1513867)
 Inthe case of a strong ferromagnet, the dominant term in C2 is proportional tothe difference in the partial densities of states (PD<missing VAR>OSs) at the Fermi energy(E<missing VAR>rm F) between the d<missing VAR>varepsilon and d<missing VAR>gamma states, and that inC4 is proportional to the difference in the PD<missing VAR>OSs at E<missing VAR>rm F among thed<missing VAR>varepsilon states.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Twofold and Fourfold Symmetric Anisotropic Magnetoresistance Effect in A Model with Crystal Field|Satoshi Kokado,Masakiyo Tsunoda###
(1513883, 1513883)
 Inthe case of a strong ferromagnet, the dominant term in C2 is proportional tothe difference in the partial densities of states (PD<missing VAR>OSs) at the Fermi energy(E<missing VAR>rm F) between the d<missing VAR>varepsilon and d<missing VAR>gamma states, and that inC4 is proportional to the difference in the PD<missing VAR>OSs at E<missing VAR>rm F among thed<missing VAR>varepsilon states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Twofold and Fourfold Symmetric Anisotropic Magnetoresistance Effect in A Model with Crystal Field|Satoshi Kokado,Masakiyo Tsunoda###
(1513885, 1513885)
 Inthe case of a strong ferromagnet, the dominant term in C2 is proportional tothe difference in the partial densities of states (PD<missing VAR>OSs) at the Fermi energy(E<missing VAR>rm F) between the d<missing VAR>varepsilon and d<missing VAR>gamma states, and that inC4 is proportional to the difference in the PD<missing VAR>OSs at E<missing VAR>rm F among thed<missing VAR>varepsilon states.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Twofold and Fourfold Symmetric Anisotropic Magnetoresistance Effect in A Model with Crystal Field|Satoshi Kokado,Masakiyo Tsunoda###
(1513893, 1513893)
 Inthe case of a strong ferromagnet, the dominant term in C2 is proportional tothe difference in the partial densities of states (PD<missing VAR>OSs) at the Fermi energy(E<missing VAR>rm F) between the d<missing VAR>varepsilon and d<missing VAR>gamma states, and that inC4 is proportional to the difference in the PD<missing VAR>OSs at E<missing VAR>rm F among thed<missing VAR>varepsilon states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe4N
###Twofold and Fourfold Symmetric Anisotropic Magnetoresistance Effect in A Model with Crystal Field|Satoshi Kokado,Masakiyo Tsunoda###
(1513930, 1513932)
 Using the dominant terms, we next analyze theexperimental results for Fe4N, in which C2 and C4 increase withdecreasing temperature.
Featurization terminated normally.
0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C2
###Twofold and Fourfold Symmetric Anisotropic Magnetoresistance Effect in A Model with Crystal Field|Satoshi Kokado,Masakiyo Tsunoda###
(1513939, 1513940)
 Using the dominant terms, we next analyze theexperimental results for Fe4N, in which C2 and C4 increase withdecreasing temperature.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C4
###Twofold and Fourfold Symmetric Anisotropic Magnetoresistance Effect in A Model with Crystal Field|Satoshi Kokado,Masakiyo Tsunoda###
(1513944, 1513945)
 Using the dominant terms, we next analyze theexperimental results for Fe4N, in which C2 and C4 increase withdecreasing temperature.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YBa2Cu4O8
###Fermi liquid behavior of the in-plane resistivity in the pseudogap state of YBa_2Cu_4O_8|Cyril Proust,B. Vignolle,J. Levallois,S. Adachi,N. E. Hussey###
(1514025, 1514031)
Fermi liquid behavior of the in-plane resistivity in the pseudogap state of YBa2Cu4O8.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.26666666666666666,0,0,0,0,0,0,0,0,0,0.06666666666666667,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Fermi liquid behavior of the in-plane resistivity in the pseudogap state of YBa_2Cu_4O_8|Cyril Proust,B. Vignolle,J. Levallois,S. Adachi,N. E. Hussey###
(1514139, 1514139)
 Quantumoscillations, [Doiron-Leyraud N, et al.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SI
###Fermi liquid behavior of the in-plane resistivity in the pseudogap state of YBa_2Cu_4O_8|Cyril Proust,B. Vignolle,J. Levallois,S. Adachi,N. E. Hussey###
(1514168, 1514169)
 (2007) Nature 447564-568], opticalconductivity [Mirzaei SI, et al.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

US
###Fermi liquid behavior of the in-plane resistivity in the pseudogap state of YBa_2Cu_4O_8|Cyril Proust,B. Vignolle,J. Levallois,S. Adachi,N. E. Hussey###
(1514189, 1514190)
 (2013) Proc Natl Acad Sci USA 1105774-5778]and the validity of Wiedemann-Franz law [Grissonnache G<missing VAR>, et al.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Fermi liquid behavior of the in-plane resistivity in the pseudogap state of YBa_2Cu_4O_8|Cyril Proust,B. Vignolle,J. Levallois,S. Adachi,N. E. Hussey###
(1514236, 1514236)
 B 93064513] point to a Fermi liquid regime at low temperature in theunderdoped regime.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YBa2Cu4O8
###Fermi liquid behavior of the in-plane resistivity in the pseudogap state of YBa_2Cu_4O_8|Cyril Proust,B. Vignolle,J. Levallois,S. Adachi,N. E. Hussey###
(1514357, 1514363)
 Here, we report magnetoresistancemeasurements in the magnetic-field-induced normal state of underdopedYBa2Cu4O8 which are consistent with a T<missing VAR>2 resistivity extending down to 1.5K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.26666666666666666,0,0,0,0,0,0,0,0,0,0.06666666666666667,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Fermi liquid behavior of the in-plane resistivity in the pseudogap state of YBa_2Cu_4O_8|Cyril Proust,B. Vignolle,J. Levallois,S. Adachi,N. E. Hussey###
(1514389, 1514389)
 Here, we report magnetoresistancemeasurements in the magnetic-field-induced normal state of underdopedYBa2Cu4O8 which are consistent with a T<missing VAR>2 resistivity extending down to 1.5K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Modulating spin relaxation in nanowires with infrared light at room temperature|Md. Iftekhar Hossain,Saumil Bandyopadhyay,Jayasimha Atulasimha,Supriyo Bandyopadhyay###
(1514605, 1514605)
 The dominant spinrelaxation mechanism in most technologically important semiconductors is theD<missing VAR>yakonov-Perel (D<missing VAR>P) mechanism which vanishes if the spin carriers (electrons)are confined to a single conduction subband in a quantum wire grown in certaincrystallographic directions, or polycrystalline quantum wires.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Modulating spin relaxation in nanowires with infrared light at room temperature|Md. Iftekhar Hossain,Saumil Bandyopadhyay,Jayasimha Atulasimha,Supriyo Bandyopadhyay###
(1514683, 1514683)
 Here, we reportmodulating the D<missing VAR>P spin relaxation rate (and hence the spin relaxation length)in self assembled 50-nm diameter InSb nanowires with infrared light at roomtemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

InSb
###Modulating spin relaxation in nanowires with infrared light at room temperature|Md. Iftekhar Hossain,Saumil Bandyopadhyay,Jayasimha Atulasimha,Supriyo Bandyopadhyay###
(1514718, 1514719)
 Here, we reportmodulating the D<missing VAR>P spin relaxation rate (and hence the spin relaxation length)in self assembled 50-nm diameter InSb nanowires with infrared light at roomtemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Modulating spin relaxation in nanowires with infrared light at room temperature|Md. Iftekhar Hossain,Saumil Bandyopadhyay,Jayasimha Atulasimha,Supriyo Bandyopadhyay###
(1514737, 1514737)
 In the dark, almost all the electrons in the nanowires are in thelowest conduction subband at room temperature, resulting in near-completeabsence of D<missing VAR>P relaxation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Modulating spin relaxation in nanowires with infrared light at room temperature|Md. Iftekhar Hossain,Saumil Bandyopadhyay,Jayasimha Atulasimha,Supriyo Bandyopadhyay###
(1514792, 1514792)
 In the dark, almost all the electrons in the nanowires are in thelowest conduction subband at room temperature, resulting in near-completeabsence of D<missing VAR>P relaxation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Modulating spin relaxation in nanowires with infrared light at room temperature|Md. Iftekhar Hossain,Saumil Bandyopadhyay,Jayasimha Atulasimha,Supriyo Bandyopadhyay###
(1514844, 1514844)
 Under infrared illumination, electrons are photoexcitedto higher subbands and the D<missing VAR>P spin relaxation mechanism is revived, leading toa three-fold decrease in the spin relaxation length.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BaNiS2
###Anomalous metallic state in quasi-two-dimensional BaNiS$_{2}$|David Santos-Cottin,Andrea Gauzzi,Marine Verseils,Benoit Baptiste,Gwendal Feve,Vincent Freulon,Bernard Placais,Michele Casula,Yannick Klein###
(1514952, 1514955)
Anomalous metallic state in quasi-two-dimensional BaNiS2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, -1, ',', 2],[307.0, 100, 'K', 3]

BaNiS2
###Anomalous metallic state in quasi-two-dimensional BaNiS$_{2}$|David Santos-Cottin,Andrea Gauzzi,Marine Verseils,Benoit Baptiste,Gwendal Feve,Vincent Freulon,Bernard Placais,Michele Casula,Yannick Klein###
(1515000, 1515003)
 We report on a systematic study of the thermodynamic, electronic and chargetransport properties of high-quality single crystals of BaNiS2, the metallicend-member of the quasi-twodimensional BaCo1-xNix<missing VAR>S2 systemcharacterized by a metal-insulator transition at x<missing VAR>cr0.22.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, -1, ',', 1],[259.0, 100, 'K', 2]

BaCo1-xNi
###Anomalous metallic state in quasi-two-dimensional BaNiS$_{2}$|David Santos-Cottin,Andrea Gauzzi,Marine Verseils,Benoit Baptiste,Gwendal Feve,Vincent Freulon,Bernard Placais,Michele Casula,Yannick Klein###
(1515023, 1515028)
 We report on a systematic study of the thermodynamic, electronic and chargetransport properties of high-quality single crystals of BaNiS2, the metallicend-member of the quasi-twodimensional BaCo1-xNix<missing VAR>S2 systemcharacterized by a metal-insulator transition at x<missing VAR>cr0.22.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[132.0, -1, ',', 1],[234.0, 100, 'K', 2]

S2
###Anomalous metallic state in quasi-two-dimensional BaNiS$_{2}$|David Santos-Cottin,Andrea Gauzzi,Marine Verseils,Benoit Baptiste,Gwendal Feve,Vincent Freulon,Bernard Placais,Michele Casula,Yannick Klein###
(1515030, 1515031)
 We report on a systematic study of the thermodynamic, electronic and chargetransport properties of high-quality single crystals of BaNiS2, the metallicend-member of the quasi-twodimensional BaCo1-xNix<missing VAR>S2 systemcharacterized by a metal-insulator transition at x<missing VAR>cr0.22.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, -1, ',', 1],[231.0, 100, 'K', 2]

K
###Anomalous metallic state in quasi-two-dimensional BaNiS$_{2}$|David Santos-Cottin,Andrea Gauzzi,Marine Verseils,Benoit Baptiste,Gwendal Feve,Vincent Freulon,Bernard Placais,Michele Casula,Yannick Klein###
(1515135, 1515135)
 Our analysis ofmagnetoresistivity and specific heat data consistently suggests a picture ofcompensated semimetal with two hole- and one electron-bands, whereelectron-phonon scattering dominates charge transport and the minority holesexhibit, below sim100 K, a very large mobility, muh<missing VAR>sim 15000cm2V-1s<missing VAR>-1, which is explained by a Dirac-like band.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, -1, ',', 0],[127.0, 100, 'K', 1]

V
###Anomalous metallic state in quasi-two-dimensional BaNiS$_{2}$|David Santos-Cottin,Andrea Gauzzi,Marine Verseils,Benoit Baptiste,Gwendal Feve,Vincent Freulon,Bernard Placais,Michele Casula,Yannick Klein###
(1515156, 1515156)
 Our analysis ofmagnetoresistivity and specific heat data consistently suggests a picture ofcompensated semimetal with two hole- and one electron-bands, whereelectron-phonon scattering dominates charge transport and the minority holesexhibit, below sim100 K, a very large mobility, muh<missing VAR>sim 15000cm2V-1s<missing VAR>-1, which is explained by a Dirac-like band.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, -1, ',', 0],[106.0, 100, 'K', 1]

K
###Anomalous metallic state in quasi-two-dimensional BaNiS$_{2}$|David Santos-Cottin,Andrea Gauzzi,Marine Verseils,Benoit Baptiste,Gwendal Feve,Vincent Freulon,Bernard Placais,Michele Casula,Yannick Klein###
(1515239, 1515239)
 Evidence ofunconventional metallic properties is given by an intriguing crossover of theresistivity from a Bloch-Gruneisen regime to a linear-T<missing VAR> regime occurring at2 K and by a strong linear term in the paramagnetic susceptibility above 100 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, -1, ',', 1],[23.0, 100, 'K', 0]

F
###Anomalous metallic state in quasi-two-dimensional BaNiS$_{2}$|David Santos-Cottin,Andrea Gauzzi,Marine Verseils,Benoit Baptiste,Gwendal Feve,Vincent Freulon,Bernard Placais,Michele Casula,Yannick Klein###
(1515308, 1515308)
We discuss the possibility that these anomalies reflect a departure fromconventional Fermi-liquid properties in presence of short-range AF fluctuationsand of a large Hund coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, -1, ',', 2],[46.0, 100, 'K', 1]

W
###Engineering the interlayer exchange coupling in magnetic trilayers|Ching-Hao Chang,Kun-Peng Dou,Ying-Chin Chen,Tzay-Ming Hong,Chao-Cheng Kaun###
(1515395, 1515395)
 When the thickness of metal film approaches the nanoscale, itinerant carriersresonate between its boundaries and form quantum well states (Q<missing VAR>WSs), which arecrucial to account for the film electrical, transport and magnetic properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Engineering the interlayer exchange coupling in magnetic trilayers|Ching-Hao Chang,Kun-Peng Dou,Ying-Chin Chen,Tzay-Ming Hong,Chao-Cheng Kaun###
(1515452, 1515452)
Besides the classic origin of particle-in-a-box, the Q<missing VAR>WSs are also susceptibleto the crystal structures that affect the quantum resonance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Engineering the interlayer exchange coupling in magnetic trilayers|Ching-Hao Chang,Kun-Peng Dou,Ying-Chin Chen,Tzay-Ming Hong,Chao-Cheng Kaun###
(1515491, 1515491)
 Here weinvestigate the Q<missing VAR>WSs and the magnetic interlayer exchange coupling (IE<missing VAR>C) in theFe/Ag/Fe (001) trilayer from first-principles calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Engineering the interlayer exchange coupling in magnetic trilayers|Ching-Hao Chang,Kun-Peng Dou,Ying-Chin Chen,Tzay-Ming Hong,Chao-Cheng Kaun###
(1515507, 1515507)
 Here weinvestigate the Q<missing VAR>WSs and the magnetic interlayer exchange coupling (IE<missing VAR>C) in theFe/Ag/Fe (001) trilayer from first-principles calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Engineering the interlayer exchange coupling in magnetic trilayers|Ching-Hao Chang,Kun-Peng Dou,Ying-Chin Chen,Tzay-Ming Hong,Chao-Cheng Kaun###
(1515509, 1515509)
 Here weinvestigate the Q<missing VAR>WSs and the magnetic interlayer exchange coupling (IE<missing VAR>C) in theFe/Ag/Fe (001) trilayer from first-principles calculations.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/Ag/Fe
###Engineering the interlayer exchange coupling in magnetic trilayers|Ching-Hao Chang,Kun-Peng Dou,Ying-Chin Chen,Tzay-Ming Hong,Chao-Cheng Kaun###
(1515517, 1515521)
 Here weinvestigate the Q<missing VAR>WSs and the magnetic interlayer exchange coupling (IE<missing VAR>C) in theFe/Ag/Fe (001) trilayer from first-principles calculations.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

W
###Engineering the interlayer exchange coupling in magnetic trilayers|Ching-Hao Chang,Kun-Peng Dou,Ying-Chin Chen,Tzay-Ming Hong,Chao-Cheng Kaun###
(1515586, 1515586)
 We find that thecarriers at the Brillouin-zone center (belly) and edge (neck) separately formelectron- and hole-like Q<missing VAR>WSs that give rise to an oscillatory feature for theIE<missing VAR>C as a function of the Ag-layer thickness with long and short periods.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Engineering the interlayer exchange coupling in magnetic trilayers|Ching-Hao Chang,Kun-Peng Dou,Ying-Chin Chen,Tzay-Ming Hong,Chao-Cheng Kaun###
(1515608, 1515608)
 We find that thecarriers at the Brillouin-zone center (belly) and edge (neck) separately formelectron- and hole-like Q<missing VAR>WSs that give rise to an oscillatory feature for theIE<missing VAR>C as a function of the Ag-layer thickness with long and short periods.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Engineering the interlayer exchange coupling in magnetic trilayers|Ching-Hao Chang,Kun-Peng Dou,Ying-Chin Chen,Tzay-Ming Hong,Chao-Cheng Kaun###
(1515610, 1515610)
 We find that thecarriers at the Brillouin-zone center (belly) and edge (neck) separately formelectron- and hole-like Q<missing VAR>WSs that give rise to an oscillatory feature for theIE<missing VAR>C as a function of the Ag-layer thickness with long and short periods.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ag
###Engineering the interlayer exchange coupling in magnetic trilayers|Ching-Hao Chang,Kun-Peng Dou,Ying-Chin Chen,Tzay-Ming Hong,Chao-Cheng Kaun###
(1515622, 1515622)
 We find that thecarriers at the Brillouin-zone center (belly) and edge (neck) separately formelectron- and hole-like Q<missing VAR>WSs that give rise to an oscillatory feature for theIE<missing VAR>C as a function of the Ag-layer thickness with long and short periods.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WS
###Engineering the interlayer exchange coupling in magnetic trilayers|Ching-Hao Chang,Kun-Peng Dou,Ying-Chin Chen,Tzay-Ming Hong,Chao-Cheng Kaun###
(1515645, 1515646)
 Sincethe Q<missing VAR>WS formation sensitively depends on boundary conditions, one can switchbetween these two IE<missing VAR>C periods by changing the Fe-layer thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Engineering the interlayer exchange coupling in magnetic trilayers|Ching-Hao Chang,Kun-Peng Dou,Ying-Chin Chen,Tzay-Ming Hong,Chao-Cheng Kaun###
(1515674, 1515674)
 Sincethe Q<missing VAR>WS formation sensitively depends on boundary conditions, one can switchbetween these two IE<missing VAR>C periods by changing the Fe-layer thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Engineering the interlayer exchange coupling in magnetic trilayers|Ching-Hao Chang,Kun-Peng Dou,Ying-Chin Chen,Tzay-Ming Hong,Chao-Cheng Kaun###
(1515676, 1515676)
 Sincethe Q<missing VAR>WS formation sensitively depends on boundary conditions, one can switchbetween these two IE<missing VAR>C periods by changing the Fe-layer thickness.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Engineering the interlayer exchange coupling in magnetic trilayers|Ching-Hao Chang,Kun-Peng Dou,Ying-Chin Chen,Tzay-Ming Hong,Chao-Cheng Kaun###
(1515686, 1515686)
 Sincethe Q<missing VAR>WS formation sensitively depends on boundary conditions, one can switchbetween these two IE<missing VAR>C periods by changing the Fe-layer thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Engineering the interlayer exchange coupling in magnetic trilayers|Ching-Hao Chang,Kun-Peng Dou,Ying-Chin Chen,Tzay-Ming Hong,Chao-Cheng Kaun###
(1515743, 1515743)
 Thesefeatures, which also occur in the magnetic trilayers with other noble-metalspacers, open a new degree of freedom to engineer the IE<missing VAR>C in magnetoresistancedevices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Engineering the interlayer exchange coupling in magnetic trilayers|Ching-Hao Chang,Kun-Peng Dou,Ying-Chin Chen,Tzay-Ming Hong,Chao-Cheng Kaun###
(1515745, 1515745)
 Thesefeatures, which also occur in the magnetic trilayers with other noble-metalspacers, open a new degree of freedom to engineer the IE<missing VAR>C in magnetoresistancedevices.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaSb
###Consequences of breaking time reversal symmetry in LaSb: a resistivity plateau and extreme magnetoresistance|F. F. Tafti,Q. D. Gibson,S. K. Kushwaha,N. Haldolaarachchige,R. J. Cava###
(1515777, 1515778)
Consequences of breaking time reversal symmetry in LaSb a resistivity plateau and extreme magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[456.0, 15, 'K', 8],[536.0, 9, 'tesla', 8]

S
###Consequences of breaking time reversal symmetry in LaSb: a resistivity plateau and extreme magnetoresistance|F. F. Tafti,Q. D. Gibson,S. K. Kushwaha,N. Haldolaarachchige,R. J. Cava###
(1515802, 1515802)
 Time reversal symmetry (TRS) protects the metallic surface modes oftopological insulators (T<missing VAR>Is).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[432.0, 15, 'K', 7],[512.0, 9, 'tesla', 7]

I
###Consequences of breaking time reversal symmetry in LaSb: a resistivity plateau and extreme magnetoresistance|F. F. Tafti,Q. D. Gibson,S. K. Kushwaha,N. Haldolaarachchige,R. J. Cava###
(1515898, 1515898)
 This universal behavior isobserved in all T<missing VAR>I candidates ranging from Bi2Te2Se to SmB6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[336.0, 15, 'K', 5],[416.0, 9, 'tesla', 5]

Bi2Te2Se
###Consequences of breaking time reversal symmetry in LaSb: a resistivity plateau and extreme magnetoresistance|F. F. Tafti,Q. D. Gibson,S. K. Kushwaha,N. Haldolaarachchige,R. J. Cava###
(1515906, 1515910)
 This universal behavior isobserved in all T<missing VAR>I candidates ranging from Bi2Te2Se to SmB6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[324.0, 15, 'K', 5],[404.0, 9, 'tesla', 5]

SmB6
###Consequences of breaking time reversal symmetry in LaSb: a resistivity plateau and extreme magnetoresistance|F. F. Tafti,Q. D. Gibson,S. K. Kushwaha,N. Haldolaarachchige,R. J. Cava###
(1515914, 1515916)
 This universal behavior isobserved in all T<missing VAR>I candidates ranging from Bi2Te2Se to SmB6.
Featurization terminated normally.
0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[318.0, 15, 'K', 5],[398.0, 9, 'tesla', 5]

S
###Consequences of breaking time reversal symmetry in LaSb: a resistivity plateau and extreme magnetoresistance|F. F. Tafti,Q. D. Gibson,S. K. Kushwaha,N. Haldolaarachchige,R. J. Cava###
(1515931, 1515931)
 Recently, severaltopological semimetals (T<missing VAR>SMs) have been found that exhibit extrememagnetoresistance (XMR) and T<missing VAR>I universal resistivity behavior revealed onlywhen breaking TRS, a regime where T<missing VAR>Is theoretically cease to exist.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[303.0, 15, 'K', 4],[383.0, 9, 'tesla', 4]

I
###Consequences of breaking time reversal symmetry in LaSb: a resistivity plateau and extreme magnetoresistance|F. F. Tafti,Q. D. Gibson,S. K. Kushwaha,N. Haldolaarachchige,R. J. Cava###
(1515959, 1515959)
 Recently, severaltopological semimetals (T<missing VAR>SMs) have been found that exhibit extrememagnetoresistance (XMR) and T<missing VAR>I universal resistivity behavior revealed onlywhen breaking TRS, a regime where T<missing VAR>Is theoretically cease to exist.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[275.0, 15, 'K', 4],[355.0, 9, 'tesla', 4]

S
###Consequences of breaking time reversal symmetry in LaSb: a resistivity plateau and extreme magnetoresistance|F. F. Tafti,Q. D. Gibson,S. K. Kushwaha,N. Haldolaarachchige,R. J. Cava###
(1515978, 1515978)
 Recently, severaltopological semimetals (T<missing VAR>SMs) have been found that exhibit extrememagnetoresistance (XMR) and T<missing VAR>I universal resistivity behavior revealed onlywhen breaking TRS, a regime where T<missing VAR>Is theoretically cease to exist.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[256.0, 15, 'K', 4],[336.0, 9, 'tesla', 4]

TaAs
###Consequences of breaking time reversal symmetry in LaSb: a resistivity plateau and extreme magnetoresistance|F. F. Tafti,Q. D. Gibson,S. K. Kushwaha,N. Haldolaarachchige,R. J. Cava###
(1516009, 1516010)
 Among thesenew materials, TaAs and NbP are nominated for Weyl semimetal due to their lackof inversion symmetry, Cd3As2 is nominated for Dirac semimetal due to itslinear band crossing at the Fermi level, and WTe2 is nominated for resonantcompensated semimetal due to its perfect electron-hole symmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[224.0, 15, 'K', 3],[304.0, 9, 'tesla', 3]

NbP
###Consequences of breaking time reversal symmetry in LaSb: a resistivity plateau and extreme magnetoresistance|F. F. Tafti,Q. D. Gibson,S. K. Kushwaha,N. Haldolaarachchige,R. J. Cava###
(1516014, 1516015)
 Among thesenew materials, TaAs and NbP are nominated for Weyl semimetal due to their lackof inversion symmetry, Cd3As2 is nominated for Dirac semimetal due to itslinear band crossing at the Fermi level, and WTe2 is nominated for resonantcompensated semimetal due to its perfect electron-hole symmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[219.0, 15, 'K', 3],[299.0, 9, 'tesla', 3]

Cd3As2
###Consequences of breaking time reversal symmetry in LaSb: a resistivity plateau and extreme magnetoresistance|F. F. Tafti,Q. D. Gibson,S. K. Kushwaha,N. Haldolaarachchige,R. J. Cava###
(1516043, 1516046)
 Among thesenew materials, TaAs and NbP are nominated for Weyl semimetal due to their lackof inversion symmetry, Cd3As2 is nominated for Dirac semimetal due to itslinear band crossing at the Fermi level, and WTe2 is nominated for resonantcompensated semimetal due to its perfect electron-hole symmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 15, 'K', 3],[268.0, 9, 'tesla', 3]

WTe2
###Consequences of breaking time reversal symmetry in LaSb: a resistivity plateau and extreme magnetoresistance|F. F. Tafti,Q. D. Gibson,S. K. Kushwaha,N. Haldolaarachchige,R. J. Cava###
(1516082, 1516084)
 Among thesenew materials, TaAs and NbP are nominated for Weyl semimetal due to their lackof inversion symmetry, Cd3As2 is nominated for Dirac semimetal due to itslinear band crossing at the Fermi level, and WTe2 is nominated for resonantcompensated semimetal due to its perfect electron-hole symmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 15, 'K', 3],[230.0, 9, 'tesla', 3]

LaSb
###Consequences of breaking time reversal symmetry in LaSb: a resistivity plateau and extreme magnetoresistance|F. F. Tafti,Q. D. Gibson,S. K. Kushwaha,N. Haldolaarachchige,R. J. Cava###
(1516121, 1516122)
 Here weintroduce LaSb, a simple rock-salt structure material without broken inversionsymmetry, without perfect linear band crossing, and without perfectelectron-hole symmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 15, 'K', 2],[192.0, 9, 'tesla', 2]

LaSb
###Consequences of breaking time reversal symmetry in LaSb: a resistivity plateau and extreme magnetoresistance|F. F. Tafti,Q. D. Gibson,S. K. Kushwaha,N. Haldolaarachchige,R. J. Cava###
(1516174, 1516175)
 Yet LaSb portrays all the exotic field inducedbehaviors of the aforementioned semimetals in an archetypal fashion.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 15, 'K', 1],[139.0, 9, 'tesla', 1]

I
###Consequences of breaking time reversal symmetry in LaSb: a resistivity plateau and extreme magnetoresistance|F. F. Tafti,Q. D. Gibson,S. K. Kushwaha,N. Haldolaarachchige,R. J. Cava###
(1516223, 1516223)
 It shows(a) the universal T<missing VAR>I resistivity with a plateau at 15 K, revealed by a magneticfield, (b) ultrahigh mobility of carriers in the plateau region, (c) quantumoscillations with a non-trivial Berry phase, and (d) XMR of about one millionpercent at 9 tesla rivaled only by WTe2 and NbP.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 15, 'K', 0],[91.0, 9, 'tesla', 0]

WTe2
###Consequences of breaking time reversal symmetry in LaSb: a resistivity plateau and extreme magnetoresistance|F. F. Tafti,Q. D. Gibson,S. K. Kushwaha,N. Haldolaarachchige,R. J. Cava###
(1516322, 1516324)
 It shows(a) the universal T<missing VAR>I resistivity with a plateau at 15 K, revealed by a magneticfield, (b) ultrahigh mobility of carriers in the plateau region, (c) quantumoscillations with a non-trivial Berry phase, and (d) XMR of about one millionpercent at 9 tesla rivaled only by WTe2 and NbP.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 15, 'K', 0],[8.0, 9, 'tesla', 0]

NbP
###Consequences of breaking time reversal symmetry in LaSb: a resistivity plateau and extreme magnetoresistance|F. F. Tafti,Q. D. Gibson,S. K. Kushwaha,N. Haldolaarachchige,R. J. Cava###
(1516328, 1516329)
 It shows(a) the universal T<missing VAR>I resistivity with a plateau at 15 K, revealed by a magneticfield, (b) ultrahigh mobility of carriers in the plateau region, (c) quantumoscillations with a non-trivial Berry phase, and (d) XMR of about one millionpercent at 9 tesla rivaled only by WTe2 and NbP.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 15, 'K', 0],[14.0, 9, 'tesla', 0]

LaSb
###Consequences of breaking time reversal symmetry in LaSb: a resistivity plateau and extreme magnetoresistance|F. F. Tafti,Q. D. Gibson,S. K. Kushwaha,N. Haldolaarachchige,R. J. Cava###
(1516344, 1516345)
 Due to its dramaticsimplicity, LaSb is the ideal model system to formulate a theoreticalunderstanding of the exotic consequences of breaking TRS in T<missing VAR>SMs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 15, 'K', 1],[30.0, 9, 'tesla', 1]

S
###Consequences of breaking time reversal symmetry in LaSb: a resistivity plateau and extreme magnetoresistance|F. F. Tafti,Q. D. Gibson,S. K. Kushwaha,N. Haldolaarachchige,R. J. Cava###
(1516382, 1516382)
 Due to its dramaticsimplicity, LaSb is the ideal model system to formulate a theoreticalunderstanding of the exotic consequences of breaking TRS in T<missing VAR>SMs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 15, 'K', 1],[68.0, 9, 'tesla', 1]

S
###Consequences of breaking time reversal symmetry in LaSb: a resistivity plateau and extreme magnetoresistance|F. F. Tafti,Q. D. Gibson,S. K. Kushwaha,N. Haldolaarachchige,R. J. Cava###
(1516387, 1516387)
 Due to its dramaticsimplicity, LaSb is the ideal model system to formulate a theoreticalunderstanding of the exotic consequences of breaking TRS in T<missing VAR>SMs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 15, 'K', 1],[73.0, 9, 'tesla', 1]

WTe2
###Origin of the turn-on temperature behavior in WTe$_2$|Y. L. Wang,L. R. Thoutam,Z. L. Xiao,J. Hu,S. Das,Z. Q. Mao,J. Wei,R. Divan,A. Luican-Mayer,G. W. Crabtree,W. K. Kwok###
(1516415, 1516417)
Origin of the turn-on temperature behavior in WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[288.0, 2, ',', 3]

H
###Origin of the turn-on temperature behavior in WTe$_2$|Y. L. Wang,L. R. Thoutam,Z. L. Xiao,J. Hu,S. Das,Z. Q. Mao,J. Wei,R. Divan,A. Luican-Mayer,G. W. Crabtree,W. K. Kwok###
(1516468, 1516468)
 A hallmark of materials with extremely large magnetoresistance (XMR) is thetransformative turn-on temperature behavior when the applied magnetic fieldH is above certain value, the resistivity versus temperature rho(T) curveshows a minimum at a field dependent temperature T<missing VAR>, which has beeninterpreted as a magnetic-field-driven metal-insulator transition or attributedto an electronic structure change.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[237.0, 2, ',', 2]

WTe2
###Origin of the turn-on temperature behavior in WTe$_2$|Y. L. Wang,L. R. Thoutam,Z. L. Xiao,J. Hu,S. Das,Z. Q. Mao,J. Wei,R. Divan,A. Luican-Mayer,G. W. Crabtree,W. K. Kwok###
(1516594, 1516596)
 Here, we demonstrate that rho(T) curveswith turn-on behavior in the newly discovered XMR material WTe2 can bescaled as MR sim(H/rho0)m<missing VAR> with m<missing VAR>approx 2 and rho0 being theresistivity at zero-field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 2, ',', 1]

H
###Origin of the turn-on temperature behavior in WTe$_2$|Y. L. Wang,L. R. Thoutam,Z. L. Xiao,J. Hu,S. Das,Z. Q. Mao,J. Wei,R. Divan,A. Luican-Mayer,G. W. Crabtree,W. K. Kwok###
(1516612, 1516612)
 Here, we demonstrate that rho(T) curveswith turn-on behavior in the newly discovered XMR material WTe2 can bescaled as MR sim(H/rho0)m<missing VAR> with m<missing VAR>approx 2 and rho0 being theresistivity at zero-field.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 2, ',', 1]

H
###Origin of the turn-on temperature behavior in WTe$_2$|Y. L. Wang,L. R. Thoutam,Z. L. Xiao,J. Hu,S. Das,Z. Q. Mao,J. Wei,R. Divan,A. Luican-Mayer,G. W. Crabtree,W. K. Kwok###
(1516690, 1516690)
 We obtained experimentally and also derived from theobserved scaling the magnetic field dependence of the turn-on temperature T<missing VAR>sim (H-Hc)nu with nu approx 1/2, which was earlier used as evidencefor a predicted metal-insulator transition.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 2, ',', 0]

H
###Origin of the turn-on temperature behavior in WTe$_2$|Y. L. Wang,L. R. Thoutam,Z. L. Xiao,J. Hu,S. Das,Z. Q. Mao,J. Wei,R. Divan,A. Luican-Mayer,G. W. Crabtree,W. K. Kwok###
(1516692, 1516692)
 We obtained experimentally and also derived from theobserved scaling the magnetic field dependence of the turn-on temperature T<missing VAR>sim (H-Hc)nu with nu approx 1/2, which was earlier used as evidencefor a predicted metal-insulator transition.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 2, ',', 0]

WTe2
###Origin of the turn-on temperature behavior in WTe$_2$|Y. L. Wang,L. R. Thoutam,Z. L. Xiao,J. Hu,S. Das,Z. Q. Mao,J. Wei,R. Divan,A. Luican-Mayer,G. W. Crabtree,W. K. Kwok###
(1516860, 1516862)
 These resultsexclude the possible existence of a magnetic-field-driven metal-insulatortransition or significant contribution of an electronic structure change to thelow-temperature XMR in WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 2, ',', 2]

F
###A close look at antiferromagnetism in multidimensional phase diagram of electron-doped copper oxide|Heshan Yu,Ge He,Ziquan Lin,Jie Yuan,Beiyi Zhu,Yi-feng Yang,Tao Xiang,Feo. V. Kusmartsev,Liang Li,Junfeng Wang,Kui Jin###
(1517008, 1517008)
 Emergency of superconductivity at the instabilities of antiferromagnetism(AFM), spin/charge density waves has been widely recognized in unconventionalsuperconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 58, 'Tesla', 3]

In
###A close look at antiferromagnetism in multidimensional phase diagram of electron-doped copper oxide|Heshan Yu,Ge He,Ziquan Lin,Jie Yuan,Beiyi Zhu,Yi-feng Yang,Tao Xiang,Feo. V. Kusmartsev,Liang Li,Junfeng Wang,Kui Jin###
(1517037, 1517037)
 In copper-oxide superconductors, spin fluctuations play apredominant role in electron pairing with electron dopants yet composite ordersveil the nature of superconductivity for hole-doped family.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 58, 'Tesla', 2]

F
###A close look at antiferromagnetism in multidimensional phase diagram of electron-doped copper oxide|Heshan Yu,Ge He,Ziquan Lin,Jie Yuan,Beiyi Zhu,Yi-feng Yang,Tao Xiang,Feo. V. Kusmartsev,Liang Li,Junfeng Wang,Kui Jin###
(1517118, 1517118)
 However, inelectron-doped ones the ending point of AFM<missing VAR> is still in controversy fordifferent probes or its sensitivity to oxygen content.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 58, 'Tesla', 1]

La2-x
###A close look at antiferromagnetism in multidimensional phase diagram of electron-doped copper oxide|Heshan Yu,Ge He,Ziquan Lin,Jie Yuan,Beiyi Zhu,Yi-feng Yang,Tao Xiang,Feo. V. Kusmartsev,Liang Li,Junfeng Wang,Kui Jin###
(1517194, 1517197)
 Here, by carefullytuning the oxygen content, a systematic study of Hall signal andmagnetoresistivity up to 58 Tesla on optimally doped La2-xCexCuO4-delta (x<missing VAR> 0.10) thin films identifies two characteristic temperatures at 62.5-7.5 Kand 25-5 K.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[8.0, 58, 'Tesla', 0]

CuO4
###A close look at antiferromagnetism in multidimensional phase diagram of electron-doped copper oxide|Heshan Yu,Ge He,Ziquan Lin,Jie Yuan,Beiyi Zhu,Yi-feng Yang,Tao Xiang,Feo. V. Kusmartsev,Liang Li,Junfeng Wang,Kui Jin###
(1517199, 1517201)
 Here, by carefullytuning the oxygen content, a systematic study of Hall signal andmagnetoresistivity up to 58 Tesla on optimally doped La2-xCexCuO4-delta (x<missing VAR> 0.10) thin films identifies two characteristic temperatures at 62.5-7.5 Kand 25-5 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 58, 'Tesla', 0]

K
###A close look at antiferromagnetism in multidimensional phase diagram of electron-doped copper oxide|Heshan Yu,Ge He,Ziquan Lin,Jie Yuan,Beiyi Zhu,Yi-feng Yang,Tao Xiang,Feo. V. Kusmartsev,Liang Li,Junfeng Wang,Kui Jin###
(1517231, 1517231)
 Here, by carefullytuning the oxygen content, a systematic study of Hall signal andmagnetoresistivity up to 58 Tesla on optimally doped La2-xCexCuO4-delta (x<missing VAR> 0.10) thin films identifies two characteristic temperatures at 62.5-7.5 Kand 25-5 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 58, 'Tesla', 0]

K
###A close look at antiferromagnetism in multidimensional phase diagram of electron-doped copper oxide|Heshan Yu,Ge He,Ziquan Lin,Jie Yuan,Beiyi Zhu,Yi-feng Yang,Tao Xiang,Feo. V. Kusmartsev,Liang Li,Junfeng Wang,Kui Jin###
(1517240, 1517240)
 Here, by carefullytuning the oxygen content, a systematic study of Hall signal andmagnetoresistivity up to 58 Tesla on optimally doped La2-xCexCuO4-delta (x<missing VAR> 0.10) thin films identifies two characteristic temperatures at 62.5-7.5 Kand 25-5 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 58, 'Tesla', 0]

F
###A close look at antiferromagnetism in multidimensional phase diagram of electron-doped copper oxide|Heshan Yu,Ge He,Ziquan Lin,Jie Yuan,Beiyi Zhu,Yi-feng Yang,Tao Xiang,Feo. V. Kusmartsev,Liang Li,Junfeng Wang,Kui Jin###
(1517290, 1517290)
 The former is quite robust whereas the latter becomes flexiblewith increasing magnetic field, thereby linked to two- and three-dimensionalAFM<missing VAR>, evident from the multidimensional phase diagram as a function of oxygen aswell as Ce dopants.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 58, 'Tesla', 1]

Ce
###A close look at antiferromagnetism in multidimensional phase diagram of electron-doped copper oxide|Heshan Yu,Ge He,Ziquan Lin,Jie Yuan,Beiyi Zhu,Yi-feng Yang,Tao Xiang,Feo. V. Kusmartsev,Liang Li,Junfeng Wang,Kui Jin###
(1517323, 1517323)
 The former is quite robust whereas the latter becomes flexiblewith increasing magnetic field, thereby linked to two- and three-dimensionalAFM<missing VAR>, evident from the multidimensional phase diagram as a function of oxygen aswell as Ce dopants.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 58, 'Tesla', 1]

F
###A close look at antiferromagnetism in multidimensional phase diagram of electron-doped copper oxide|Heshan Yu,Ge He,Ziquan Lin,Jie Yuan,Beiyi Zhu,Yi-feng Yang,Tao Xiang,Feo. V. Kusmartsev,Liang Li,Junfeng Wang,Kui Jin###
(1517340, 1517340)
 Consequently, the observation of extended AFM<missing VAR> phase incontrast to muSR<missing VAR> probe corroborates an elevated critical doping in field,providing an unambiguous picture to understand the interactions between AFM<missing VAR> andsuperconductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 58, 'Tesla', 2]

S
###A close look at antiferromagnetism in multidimensional phase diagram of electron-doped copper oxide|Heshan Yu,Ge He,Ziquan Lin,Jie Yuan,Beiyi Zhu,Yi-feng Yang,Tao Xiang,Feo. V. Kusmartsev,Liang Li,Junfeng Wang,Kui Jin###
(1517353, 1517353)
 Consequently, the observation of extended AFM<missing VAR> phase incontrast to muSR<missing VAR> probe corroborates an elevated critical doping in field,providing an unambiguous picture to understand the interactions between AFM<missing VAR> andsuperconductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 58, 'Tesla', 2]

F
###A close look at antiferromagnetism in multidimensional phase diagram of electron-doped copper oxide|Heshan Yu,Ge He,Ziquan Lin,Jie Yuan,Beiyi Zhu,Yi-feng Yang,Tao Xiang,Feo. V. Kusmartsev,Liang Li,Junfeng Wang,Kui Jin###
(1517393, 1517393)
 Consequently, the observation of extended AFM<missing VAR> phase incontrast to muSR<missing VAR> probe corroborates an elevated critical doping in field,providing an unambiguous picture to understand the interactions between AFM<missing VAR> andsuperconductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[207.0, 58, 'Tesla', 2]

Na3Bi
###Creating stable Floquet-Weyl semimetals by laser-driving of 3D Dirac materials|Hannes Hübener,Michael A. Sentef,Umberto de Giovannini,Alexander F. Kemper,Angel Rubio###
(1517615, 1517617)
 Here we show by first principles calculations howfemtosecond laser pulses with circularly polarised light can be used to switchbetween Weyl semimetal, Dirac semimetal, and topological insulator states in aprototypical 3D Dirac material, Na3Bi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 3, 'D', 3],[7.0, 3, 'D', 0],[19.0, 3, 'D', 1]

W
###Creating stable Floquet-Weyl semimetals by laser-driving of 3D Dirac materials|Hannes Hübener,Michael A. Sentef,Umberto de Giovannini,Alexander F. Kemper,Angel Rubio###
(1517675, 1517675)
 We discuss the concept of time-dependent bands andsteering of Floquet-Weyl points (Floquet-WPs), and demonstrate how light canenhance topological protection against lattice perturbations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[248.0, 3, 'D', 5],[67.0, 3, 'D', 2],[39.0, 3, 'D', 1]

F
###Creating stable Floquet-Weyl semimetals by laser-driving of 3D Dirac materials|Hannes Hübener,Michael A. Sentef,Umberto de Giovannini,Alexander F. Kemper,Angel Rubio###
(1517774, 1517774)
 Moreover, weintroduce Floquet time-dependent density functional theory (Floquet-TDDFT) as ageneral and robust first principles method for predictive Floquet engineeringof topological states of matter.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[347.0, 3, 'D', 7],[166.0, 3, 'D', 4],[138.0, 3, 'D', 3]

CeCo0.85Fe0.15Si
###Remarkable magnetostructural coupling around the magnetic transition in CeCo$_{0.85}$Fe$_{0.15}$Si|V. F. Correa,D. Betancourth,J. G. Sereni,N. Caroca-Canales,C. Geibel###
(1517839, 1517844)
Remarkable magnetostructural coupling around the magnetic transition in CeCo0.85Fe0.15Si.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.049999999999999996,0.2833333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 16, 'Tesla', 1],[100.0, 6.7, 'K', 2],[122.0, 13, 'K', 3],[366.0, 2, 'K', 9]

CeCo0.85Fe0.15Si
###Remarkable magnetostructural coupling around the magnetic transition in CeCo$_{0.85}$Fe$_{0.15}$Si|V. F. Correa,D. Betancourth,J. G. Sereni,N. Caroca-Canales,C. Geibel###
(1517868, 1517873)
 We report a detailed study of the magnetic properties ofCeCo0.85Fe0.15Si under high magnetic fields (up to 16 Tesla)measuring different physical properties such as specific heat, magnetization,electrical resistivity, thermal expansion and magnetostriction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.049999999999999996,0.2833333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 16, 'Tesla', 0],[71.0, 6.7, 'K', 1],[93.0, 13, 'K', 2],[337.0, 2, 'K', 8]

CeCo0.85Fe0.15Si
###Remarkable magnetostructural coupling around the magnetic transition in CeCo$_{0.85}$Fe$_{0.15}$Si|V. F. Correa,D. Betancourth,J. G. Sereni,N. Caroca-Canales,C. Geibel###
(1517927, 1517932)
CeCo0.85Fe0.15Si becomes antiferromagnetic at T<missing VAR>N approx 6.7 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.049999999999999996,0.2833333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 16, 'Tesla', 1],[12.0, 6.7, 'K', 0],[34.0, 13, 'K', 1],[278.0, 2, 'K', 7]

N
###Remarkable magnetostructural coupling around the magnetic transition in CeCo$_{0.85}$Fe$_{0.15}$Si|V. F. Correa,D. Betancourth,J. G. Sereni,N. Caroca-Canales,C. Geibel###
(1517941, 1517941)
CeCo0.85Fe0.15Si becomes antiferromagnetic at T<missing VAR>N approx 6.7 K.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 16, 'Tesla', 1],[3.0, 6.7, 'K', 0],[25.0, 13, 'K', 1],[269.0, 2, 'K', 7]

N
###Remarkable magnetostructural coupling around the magnetic transition in CeCo$_{0.85}$Fe$_{0.15}$Si|V. F. Correa,D. Betancourth,J. G. Sereni,N. Caroca-Canales,C. Geibel###
(1518134, 1518134)
 But surprisingly, the bump in the thermal expansionbecomes a well pronounced peak fully split from the magnetic transition atT<missing VAR>N.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[247.0, 16, 'Tesla', 6],[190.0, 6.7, 'K', 5],[168.0, 13, 'K', 4],[76.0, 2, 'K', 2]

YSb
###Magnetotransport of single crystalline YSb|N. J. Ghimire,A. S. Botana,D. Phelan,H. Zheng,J. F. Mitchell###
(1518337, 1518338)
Magnetotransport of single crystalline YSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 9, 'T', 2],[81.0, 75, ',', 2],[88.0, 1.8, 'K', 2],[122.0, 110, 'and', 3],[123.0, 50, 'K', 3],[138.0, 50, 'K', 3],[226.0, 1.8, 'K', 5],[348.0, 13, 'K', 7]

YSb
###Magnetotransport of single crystalline YSb|N. J. Ghimire,A. S. Botana,D. Phelan,H. Zheng,J. F. Mitchell###
(1518368, 1518369)
 We report magnetic field dependent transport measurements on a single crystalof cubic YSb together with first principles calculations of its electronicstructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 9, 'T', 1],[50.0, 75, ',', 1],[57.0, 1.8, 'K', 1],[91.0, 110, 'and', 2],[92.0, 50, 'K', 2],[107.0, 50, 'K', 2],[195.0, 1.8, 'K', 4],[317.0, 13, 'K', 6]

YSb
###Magnetotransport of single crystalline YSb|N. J. Ghimire,A. S. Botana,D. Phelan,H. Zheng,J. F. Mitchell###
(1518489, 1518490)
 First principles calculations show that YSbis a compensated semimetal with a qualitatively similar electronic structure tothat of isostructural LaSb and LaBi, but with larger Fermi surface volume.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 9, 'T', 2],[70.0, 75, ',', 2],[63.0, 1.8, 'K', 2],[29.0, 110, 'and', 1],[28.0, 50, 'K', 1],[13.0, 50, 'K', 1],[74.0, 1.8, 'K', 1],[196.0, 13, 'K', 3]

LaSb
###Magnetotransport of single crystalline YSb|N. J. Ghimire,A. S. Botana,D. Phelan,H. Zheng,J. F. Mitchell###
(1518522, 1518523)
 First principles calculations show that YSbis a compensated semimetal with a qualitatively similar electronic structure tothat of isostructural LaSb and LaBi, but with larger Fermi surface volume.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 9, 'T', 2],[103.0, 75, ',', 2],[96.0, 1.8, 'K', 2],[62.0, 110, 'and', 1],[61.0, 50, 'K', 1],[46.0, 50, 'K', 1],[41.0, 1.8, 'K', 1],[163.0, 13, 'K', 3]

LaBi
###Magnetotransport of single crystalline YSb|N. J. Ghimire,A. S. Botana,D. Phelan,H. Zheng,J. F. Mitchell###
(1518527, 1518528)
 First principles calculations show that YSbis a compensated semimetal with a qualitatively similar electronic structure tothat of isostructural LaSb and LaBi, but with larger Fermi surface volume.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 9, 'T', 2],[108.0, 75, ',', 2],[101.0, 1.8, 'K', 2],[67.0, 110, 'and', 1],[66.0, 50, 'K', 1],[51.0, 50, 'K', 1],[36.0, 1.8, 'K', 1],[158.0, 13, 'K', 3]

LaBi
###Magnetotransport of single crystalline YSb|N. J. Ghimire,A. S. Botana,D. Phelan,H. Zheng,J. F. Mitchell###
(1518624, 1518625)
 These values are comparable withthose reported for LaBi and LaSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[218.0, 9, 'T', 4],[205.0, 75, ',', 4],[198.0, 1.8, 'K', 4],[164.0, 110, 'and', 3],[163.0, 50, 'K', 3],[148.0, 50, 'K', 3],[60.0, 1.8, 'K', 1],[61.0, 13, 'K', 1]

LaSb
###Magnetotransport of single crystalline YSb|N. J. Ghimire,A. S. Botana,D. Phelan,H. Zheng,J. F. Mitchell###
(1518629, 1518630)
 These values are comparable withthose reported for LaBi and LaSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[223.0, 9, 'T', 4],[210.0, 75, ',', 4],[203.0, 1.8, 'K', 4],[169.0, 110, 'and', 3],[168.0, 50, 'K', 3],[153.0, 50, 'K', 3],[65.0, 1.8, 'K', 1],[56.0, 13, 'K', 1]

LaBi
###Magnetotransport of single crystalline YSb|N. J. Ghimire,A. S. Botana,D. Phelan,H. Zheng,J. F. Mitchell###
(1518635, 1518636)
 Like LaBi and LaSb, YSb undergoes a magneticfield-induced metal-insulator-like transition below a characteristictemperature Tm, with resistivity saturation below 13 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[229.0, 9, 'T', 5],[216.0, 75, ',', 5],[209.0, 1.8, 'K', 5],[175.0, 110, 'and', 4],[174.0, 50, 'K', 4],[159.0, 50, 'K', 4],[71.0, 1.8, 'K', 2],[50.0, 13, 'K', 0]

LaSb
###Magnetotransport of single crystalline YSb|N. J. Ghimire,A. S. Botana,D. Phelan,H. Zheng,J. F. Mitchell###
(1518640, 1518641)
 Like LaBi and LaSb, YSb undergoes a magneticfield-induced metal-insulator-like transition below a characteristictemperature Tm, with resistivity saturation below 13 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[234.0, 9, 'T', 5],[221.0, 75, ',', 5],[214.0, 1.8, 'K', 5],[180.0, 110, 'and', 4],[179.0, 50, 'K', 4],[164.0, 50, 'K', 4],[76.0, 1.8, 'K', 2],[45.0, 13, 'K', 0]

YSb
###Magnetotransport of single crystalline YSb|N. J. Ghimire,A. S. Botana,D. Phelan,H. Zheng,J. F. Mitchell###
(1518644, 1518645)
 Like LaBi and LaSb, YSb undergoes a magneticfield-induced metal-insulator-like transition below a characteristictemperature Tm, with resistivity saturation below 13 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[238.0, 9, 'T', 5],[225.0, 75, ',', 5],[218.0, 1.8, 'K', 5],[184.0, 110, 'and', 4],[183.0, 50, 'K', 4],[168.0, 50, 'K', 4],[80.0, 1.8, 'K', 2],[41.0, 13, 'K', 0]

C
###Non-thermal separation of electronic and structural orders in a persisting charge density wave|M. Porer,U. Leierseder,J. -M. Ménard,H. Dachraoui,L. Mouchliadis,I. E. Perakis,U. Heinzmann,J. Demsar,K. Rossnagel,R. Huber###
(1519022, 1519022)
 For the example of acharge-density-wave (CD<missing VAR>W) in 1T-TiSe2, we demonstrate that two components ofthe CD<missing VAR>W order parameter - excitonic correlations and a periodic latticedistortion (PLD) - respond very differently to 12-fs optical excitation.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 1, 'T', 0],[160.0, 1, 'T', 2]

W
###Non-thermal separation of electronic and structural orders in a persisting charge density wave|M. Porer,U. Leierseder,J. -M. Ménard,H. Dachraoui,L. Mouchliadis,I. E. Perakis,U. Heinzmann,J. Demsar,K. Rossnagel,R. Huber###
(1519024, 1519024)
 For the example of acharge-density-wave (CD<missing VAR>W) in 1T-TiSe2, we demonstrate that two components ofthe CD<missing VAR>W order parameter - excitonic correlations and a periodic latticedistortion (PLD) - respond very differently to 12-fs optical excitation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 1, 'T', 0],[158.0, 1, 'T', 2]

TiSe2
###Non-thermal separation of electronic and structural orders in a persisting charge density wave|M. Porer,U. Leierseder,J. -M. Ménard,H. Dachraoui,L. Mouchliadis,I. E. Perakis,U. Heinzmann,J. Demsar,K. Rossnagel,R. Huber###
(1519030, 1519032)
 For the example of acharge-density-wave (CD<missing VAR>W) in 1T-TiSe2, we demonstrate that two components ofthe CD<missing VAR>W order parameter - excitonic correlations and a periodic latticedistortion (PLD) - respond very differently to 12-fs optical excitation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 1, 'T', 0],[150.0, 1, 'T', 2]

C
###Non-thermal separation of electronic and structural orders in a persisting charge density wave|M. Porer,U. Leierseder,J. -M. Ménard,H. Dachraoui,L. Mouchliadis,I. E. Perakis,U. Heinzmann,J. Demsar,K. Rossnagel,R. Huber###
(1519050, 1519050)
 For the example of acharge-density-wave (CD<missing VAR>W) in 1T-TiSe2, we demonstrate that two components ofthe CD<missing VAR>W order parameter - excitonic correlations and a periodic latticedistortion (PLD) - respond very differently to 12-fs optical excitation.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 1, 'T', 0],[132.0, 1, 'T', 2]

W
###Non-thermal separation of electronic and structural orders in a persisting charge density wave|M. Porer,U. Leierseder,J. -M. Ménard,H. Dachraoui,L. Mouchliadis,I. E. Perakis,U. Heinzmann,J. Demsar,K. Rossnagel,R. Huber###
(1519052, 1519052)
 For the example of acharge-density-wave (CD<missing VAR>W) in 1T-TiSe2, we demonstrate that two components ofthe CD<missing VAR>W order parameter - excitonic correlations and a periodic latticedistortion (PLD) - respond very differently to 12-fs optical excitation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 1, 'T', 0],[130.0, 1, 'T', 2]

P
###Non-thermal separation of electronic and structural orders in a persisting charge density wave|M. Porer,U. Leierseder,J. -M. Ménard,H. Dachraoui,L. Mouchliadis,I. E. Perakis,U. Heinzmann,J. Demsar,K. Rossnagel,R. Huber###
(1519076, 1519076)
 For the example of acharge-density-wave (CD<missing VAR>W) in 1T-TiSe2, we demonstrate that two components ofthe CD<missing VAR>W order parameter - excitonic correlations and a periodic latticedistortion (PLD) - respond very differently to 12-fs optical excitation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 1, 'T', 0],[106.0, 1, 'T', 2]

C
###Non-thermal separation of electronic and structural orders in a persisting charge density wave|M. Porer,U. Leierseder,J. -M. Ménard,H. Dachraoui,L. Mouchliadis,I. E. Perakis,U. Heinzmann,J. Demsar,K. Rossnagel,R. Huber###
(1519115, 1519115)
 Evenwhen the excitonic order of the CD<missing VAR>W is quenched, the PLD can persist in acoherently excited state.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 1, 'T', 1],[67.0, 1, 'T', 1]

W
###Non-thermal separation of electronic and structural orders in a persisting charge density wave|M. Porer,U. Leierseder,J. -M. Ménard,H. Dachraoui,L. Mouchliadis,I. E. Perakis,U. Heinzmann,J. Demsar,K. Rossnagel,R. Huber###
(1519117, 1519117)
 Evenwhen the excitonic order of the CD<missing VAR>W is quenched, the PLD can persist in acoherently excited state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 1, 'T', 1],[65.0, 1, 'T', 1]

P
###Non-thermal separation of electronic and structural orders in a persisting charge density wave|M. Porer,U. Leierseder,J. -M. Ménard,H. Dachraoui,L. Mouchliadis,I. E. Perakis,U. Heinzmann,J. Demsar,K. Rossnagel,R. Huber###
(1519126, 1519126)
 Evenwhen the excitonic order of the CD<missing VAR>W is quenched, the PLD can persist in acoherently excited state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 1, 'T', 1],[56.0, 1, 'T', 1]

C
###Non-thermal separation of electronic and structural orders in a persisting charge density wave|M. Porer,U. Leierseder,J. -M. Ménard,H. Dachraoui,L. Mouchliadis,I. E. Perakis,U. Heinzmann,J. Demsar,K. Rossnagel,R. Huber###
(1519175, 1519175)
 This observation proves that excitonic correlationsare not the sole driving force of the CD<missing VAR>W transition in 1T-TiSe2, andexemplifies the sort of profound insight that disentangling strongly coupledcomponents of order parameters in the time domain may provide for theunderstanding of a broad class of phase transitions.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 1, 'T', 2],[7.0, 1, 'T', 0]

W
###Non-thermal separation of electronic and structural orders in a persisting charge density wave|M. Porer,U. Leierseder,J. -M. Ménard,H. Dachraoui,L. Mouchliadis,I. E. Perakis,U. Heinzmann,J. Demsar,K. Rossnagel,R. Huber###
(1519177, 1519177)
 This observation proves that excitonic correlationsare not the sole driving force of the CD<missing VAR>W transition in 1T-TiSe2, andexemplifies the sort of profound insight that disentangling strongly coupledcomponents of order parameters in the time domain may provide for theunderstanding of a broad class of phase transitions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 1, 'T', 2],[5.0, 1, 'T', 0]

TiSe2
###Non-thermal separation of electronic and structural orders in a persisting charge density wave|M. Porer,U. Leierseder,J. -M. Ménard,H. Dachraoui,L. Mouchliadis,I. E. Perakis,U. Heinzmann,J. Demsar,K. Rossnagel,R. Huber###
(1519184, 1519186)
 This observation proves that excitonic correlationsare not the sole driving force of the CD<missing VAR>W transition in 1T-TiSe2, andexemplifies the sort of profound insight that disentangling strongly coupledcomponents of order parameters in the time domain may provide for theunderstanding of a broad class of phase transitions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 1, 'T', 2],[2.0, 1, 'T', 0]

BaFe12O19
###Weak localization effect in topological insulator micro flakes grown on insulating ferrimagnet BaFe12O19|Guolin Zheng,Ning Wang,Jiyong Yang,Weike Wang,Haifeng Du,Wei Ning,Zhaorong Yang,Hai-Zhou Lu,Yuheng Zhang,Mingliang Tian###
(1519814, 1519818)
Weak localization effect in topological insulator micro flakes grown on insulating ferrimagnet BaFe12O19.
Featurization terminated normally.
0,0,0,0,0,0,0,0.59375,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.375,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.03125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[242.0, 50, 'K', 5],[329.0, 10, 'meV', 7]

In
###Weak localization effect in topological insulator micro flakes grown on insulating ferrimagnet BaFe12O19|Guolin Zheng,Ning Wang,Jiyong Yang,Weike Wang,Haifeng Du,Wei Ning,Zhaorong Yang,Hai-Zhou Lu,Yuheng Zhang,Mingliang Tian###
(1519920, 1519920)
 In contrast, the proximity to a ferromagnetic/ferrimagneticinsulator may improve the device quality, thus promises a better way to openthe gap while minimizing the side-effects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 50, 'K', 2],[227.0, 10, 'meV', 4]

Sb1.9Bi0.1Te3
###Weak localization effect in topological insulator micro flakes grown on insulating ferrimagnet BaFe12O19|Guolin Zheng,Ning Wang,Jiyong Yang,Weike Wang,Haifeng Du,Wei Ning,Zhaorong Yang,Hai-Zhou Lu,Yuheng Zhang,Mingliang Tian###
(1519995, 1520000)
 Here, we grow thin single-crystalSb1.9Bi0.1Te3 micro flakes on insulating ferrimagnet BaFe12O19 by using the vander Waals epitaxy technique.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.38,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.02,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 50, 'K', 1],[147.0, 10, 'meV', 3]

BaFe12O19
###Weak localization effect in topological insulator micro flakes grown on insulating ferrimagnet BaFe12O19|Guolin Zheng,Ning Wang,Jiyong Yang,Weike Wang,Haifeng Du,Wei Ning,Zhaorong Yang,Hai-Zhou Lu,Yuheng Zhang,Mingliang Tian###
(1520012, 1520016)
 Here, we grow thin single-crystalSb1.9Bi0.1Te3 micro flakes on insulating ferrimagnet BaFe12O19 by using the vander Waals epitaxy technique.
Featurization terminated normally.
0,0,0,0,0,0,0,0.59375,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.375,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.03125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 50, 'K', 1],[131.0, 10, 'meV', 3]

Ba
###Weak localization effect in topological insulator micro flakes grown on insulating ferrimagnet BaFe12O19|Guolin Zheng,Ning Wang,Jiyong Yang,Weike Wang,Haifeng Du,Wei Ning,Zhaorong Yang,Hai-Zhou Lu,Yuheng Zhang,Mingliang Tian###
(1520211, 1520211)
 These results indicate that themagnetic proximity effect may open the gap for the topological surface attachedto BaM<missing VAR> insulating ferrimagnet.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 50, 'K', 3],[64.0, 10, 'meV', 1]

SrTiO3
###Anomalous conductivity, Hall factor, magnetoresistance, and thermopower of accumulation layer in $\text{SrTiO}_3$|Han Fu,K. V. Reich,B. I. Shklovskii###
(1520300, 1520303)
Anomalous conductivity, Hall factor, magnetoresistance, and thermopower of accumulation layer in textSrTiO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Anomalous conductivity, Hall factor, magnetoresistance, and thermopower of accumulation layer in $\text{SrTiO}_3$|Han Fu,K. V. Reich,B. I. Shklovskii###
(1520352, 1520355)
 We study the low temperature conductivity of the electron accumulation layerinduced by the very strong electric field at the surface of textSrTiO3sample.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Anomalous conductivity, Hall factor, magnetoresistance, and thermopower of accumulation layer in $\text{SrTiO}_3$|Han Fu,K. V. Reich,B. I. Shklovskii###
(1520583, 1520583)
 As aresult we arrive at the anomalously large mobility, which depends not only onthe rate of the surface scattering, but also on the physics of truncation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CaKFe4As4
###Anisotropic magnetoresistance and upper critical fields up to 63 T in CaKFe$_4$As$_4$ single crystals|Tai Kong,Fedor F. Balakirev,William R. Meier,Sergey L. Bud'ko,Alex Gurevich,Paul C. Canfield###
(1520704, 1520709)
Anisotropic magnetoresistance and upper critical fields up to 63 T in CaKFe4As4 single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0.1,0,0,0,0,0,0.4,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 63, 'T', 0],[115.0, 14, 'T', 1],[131.0, 63, 'T', 1],[192.0, 25, 'K', 2],[321.0, 5.8, ',', 3],[333.0, 14.3, ',', 3]

H
###Anisotropic magnetoresistance and upper critical fields up to 63 T in CaKFe$_4$As$_4$ single crystals|Tai Kong,Fedor F. Balakirev,William R. Meier,Sergey L. Bud'ko,Alex Gurevich,Paul C. Canfield###
(1520737, 1520737)
 We report the temperature dependencies of the upper critical fieldsHc<missing VAR>text2textc(T) parallel to the c<missing VAR>-axis andHc<missing VAR>text2textab(T) parallel to the ab-plane of single crystallineCaKFe4As4 inferred from the measurements of the temperature-dependentresistance in static magnetic fields up to 14 T and magnetoresistance in pulsedfields up to 63 T.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 63, 'T', 1],[87.0, 14, 'T', 0],[103.0, 63, 'T', 0],[164.0, 25, 'K', 1],[293.0, 5.8, ',', 2],[305.0, 14.3, ',', 2]

H
###Anisotropic magnetoresistance and upper critical fields up to 63 T in CaKFe$_4$As$_4$ single crystals|Tai Kong,Fedor F. Balakirev,William R. Meier,Sergey L. Bud'ko,Alex Gurevich,Paul C. Canfield###
(1520760, 1520760)
 We report the temperature dependencies of the upper critical fieldsHc<missing VAR>text2textc(T) parallel to the c<missing VAR>-axis andHc<missing VAR>text2textab(T) parallel to the ab-plane of single crystallineCaKFe4As4 inferred from the measurements of the temperature-dependentresistance in static magnetic fields up to 14 T and magnetoresistance in pulsedfields up to 63 T.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 63, 'T', 1],[64.0, 14, 'T', 0],[80.0, 63, 'T', 0],[141.0, 25, 'K', 1],[270.0, 5.8, ',', 2],[282.0, 14.3, ',', 2]

CaKFe4As4
###Anisotropic magnetoresistance and upper critical fields up to 63 T in CaKFe$_4$As$_4$ single crystals|Tai Kong,Fedor F. Balakirev,William R. Meier,Sergey L. Bud'ko,Alex Gurevich,Paul C. Canfield###
(1520787, 1520792)
 We report the temperature dependencies of the upper critical fieldsHc<missing VAR>text2textc(T) parallel to the c<missing VAR>-axis andHc<missing VAR>text2textab(T) parallel to the ab-plane of single crystallineCaKFe4As4 inferred from the measurements of the temperature-dependentresistance in static magnetic fields up to 14 T and magnetoresistance in pulsedfields up to 63 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0.1,0,0,0,0,0,0.4,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 63, 'T', 1],[32.0, 14, 'T', 0],[48.0, 63, 'T', 0],[109.0, 25, 'K', 1],[238.0, 5.8, ',', 2],[250.0, 14.3, ',', 2]

H
###Anisotropic magnetoresistance and upper critical fields up to 63 T in CaKFe$_4$As$_4$ single crystals|Tai Kong,Fedor F. Balakirev,William R. Meier,Sergey L. Bud'ko,Alex Gurevich,Paul C. Canfield###
(1520868, 1520868)
 We show that the observed decrease of the anisotropyparameter gamma(T)Hc<missing VAR>text2textab/Hc<missing VAR>text2textc<missing VAR> fromsimeq 2.5 at Tc to simeq 1.5 at 25 K can be explained by interplay ofparamagnetic pairbreaking and orbital effects in a multiband theory ofHc<missing VAR>2.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[168.0, 63, 'T', 2],[44.0, 14, 'T', 1],[28.0, 63, 'T', 1],[33.0, 25, 'K', 0],[162.0, 5.8, ',', 1],[174.0, 14.3, ',', 1]

H
###Anisotropic magnetoresistance and upper critical fields up to 63 T in CaKFe$_4$As$_4$ single crystals|Tai Kong,Fedor F. Balakirev,William R. Meier,Sergey L. Bud'ko,Alex Gurevich,Paul C. Canfield###
(1520875, 1520875)
 We show that the observed decrease of the anisotropyparameter gamma(T)Hc<missing VAR>text2textab/Hc<missing VAR>text2textc<missing VAR> fromsimeq 2.5 at Tc to simeq 1.5 at 25 K can be explained by interplay ofparamagnetic pairbreaking and orbital effects in a multiband theory ofHc<missing VAR>2.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 63, 'T', 2],[51.0, 14, 'T', 1],[35.0, 63, 'T', 1],[26.0, 25, 'K', 0],[155.0, 5.8, ',', 1],[167.0, 14.3, ',', 1]

H
###Anisotropic magnetoresistance and upper critical fields up to 63 T in CaKFe$_4$As$_4$ single crystals|Tai Kong,Fedor F. Balakirev,William R. Meier,Sergey L. Bud'ko,Alex Gurevich,Paul C. Canfield###
(1520937, 1520937)
 We show that the observed decrease of the anisotropyparameter gamma(T)Hc<missing VAR>text2textab/Hc<missing VAR>text2textc<missing VAR> fromsimeq 2.5 at Tc to simeq 1.5 at 25 K can be explained by interplay ofparamagnetic pairbreaking and orbital effects in a multiband theory ofHc<missing VAR>2.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[237.0, 63, 'T', 2],[113.0, 14, 'T', 1],[97.0, 63, 'T', 1],[36.0, 25, 'K', 0],[93.0, 5.8, ',', 1],[105.0, 14.3, ',', 1]

K
###Anisotropic magnetoresistance and upper critical fields up to 63 T in CaKFe$_4$As$_4$ single crystals|Tai Kong,Fedor F. Balakirev,William R. Meier,Sergey L. Bud'ko,Alex Gurevich,Paul C. Canfield###
(1520964, 1520964)
 The slopes of dHctext2textc/dTsimeq-4.4 T<missing VAR>/K anddHctext2textab/dT simeq-10.9 T<missing VAR>/K at Tc yield an electron massanisotropy of m<missing VAR>ab/mcsimeq 1/6 and short coherence lengths xic<missing VAR>simeq5.8,textAA and xiabsimeq 14.3,textAA.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[264.0, 63, 'T', 3],[140.0, 14, 'T', 2],[124.0, 63, 'T', 2],[63.0, 25, 'K', 1],[66.0, 5.8, ',', 0],[78.0, 14.3, ',', 0]

K
###Anisotropic magnetoresistance and upper critical fields up to 63 T in CaKFe$_4$As$_4$ single crystals|Tai Kong,Fedor F. Balakirev,William R. Meier,Sergey L. Bud'ko,Alex Gurevich,Paul C. Canfield###
(1520986, 1520986)
 The slopes of dHctext2textc/dTsimeq-4.4 T<missing VAR>/K anddHctext2textab/dT simeq-10.9 T<missing VAR>/K at Tc yield an electron massanisotropy of m<missing VAR>ab/mcsimeq 1/6 and short coherence lengths xic<missing VAR>simeq5.8,textAA and xiabsimeq 14.3,textAA.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[286.0, 63, 'T', 3],[162.0, 14, 'T', 2],[146.0, 63, 'T', 2],[85.0, 25, 'K', 1],[44.0, 5.8, ',', 0],[56.0, 14.3, ',', 0]

H
###Anisotropic magnetoresistance and upper critical fields up to 63 T in CaKFe$_4$As$_4$ single crystals|Tai Kong,Fedor F. Balakirev,William R. Meier,Sergey L. Bud'ko,Alex Gurevich,Paul C. Canfield###
(1521056, 1521056)
 The behavior ofHc<missing VAR>text2(T) turns out to be similar to that of the optimal doped(Ba,K)Fe2As2, with Hc<missing VAR>text2textab(0) extrapolating tosimeq 92 T<missing VAR>, well above the BCS paramagnetic limit.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[356.0, 63, 'T', 4],[232.0, 14, 'T', 3],[216.0, 63, 'T', 3],[155.0, 25, 'K', 2],[26.0, 5.8, ',', 1],[14.0, 14.3, ',', 1]

Ba
###Anisotropic magnetoresistance and upper critical fields up to 63 T in CaKFe$_4$As$_4$ single crystals|Tai Kong,Fedor F. Balakirev,William R. Meier,Sergey L. Bud'ko,Alex Gurevich,Paul C. Canfield###
(1521088, 1521088)
 The behavior ofHc<missing VAR>text2(T) turns out to be similar to that of the optimal doped(Ba,K)Fe2As2, with Hc<missing VAR>text2textab(0) extrapolating tosimeq 92 T<missing VAR>, well above the BCS paramagnetic limit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[388.0, 63, 'T', 4],[264.0, 14, 'T', 3],[248.0, 63, 'T', 3],[187.0, 25, 'K', 2],[58.0, 5.8, ',', 1],[46.0, 14.3, ',', 1]

K
###Anisotropic magnetoresistance and upper critical fields up to 63 T in CaKFe$_4$As$_4$ single crystals|Tai Kong,Fedor F. Balakirev,William R. Meier,Sergey L. Bud'ko,Alex Gurevich,Paul C. Canfield###
(1521090, 1521090)
 The behavior ofHc<missing VAR>text2(T) turns out to be similar to that of the optimal doped(Ba,K)Fe2As2, with Hc<missing VAR>text2textab(0) extrapolating tosimeq 92 T<missing VAR>, well above the BCS paramagnetic limit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[390.0, 63, 'T', 4],[266.0, 14, 'T', 3],[250.0, 63, 'T', 3],[189.0, 25, 'K', 2],[60.0, 5.8, ',', 1],[48.0, 14.3, ',', 1]

Fe2As2
###Anisotropic magnetoresistance and upper critical fields up to 63 T in CaKFe$_4$As$_4$ single crystals|Tai Kong,Fedor F. Balakirev,William R. Meier,Sergey L. Bud'ko,Alex Gurevich,Paul C. Canfield###
(1521092, 1521095)
 The behavior ofHc<missing VAR>text2(T) turns out to be similar to that of the optimal doped(Ba,K)Fe2As2, with Hc<missing VAR>text2textab(0) extrapolating tosimeq 92 T<missing VAR>, well above the BCS paramagnetic limit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[392.0, 63, 'T', 4],[268.0, 14, 'T', 3],[252.0, 63, 'T', 3],[191.0, 25, 'K', 2],[62.0, 5.8, ',', 1],[50.0, 14.3, ',', 1]

H
###Anisotropic magnetoresistance and upper critical fields up to 63 T in CaKFe$_4$As$_4$ single crystals|Tai Kong,Fedor F. Balakirev,William R. Meier,Sergey L. Bud'ko,Alex Gurevich,Paul C. Canfield###
(1521100, 1521100)
 The behavior ofHc<missing VAR>text2(T) turns out to be similar to that of the optimal doped(Ba,K)Fe2As2, with Hc<missing VAR>text2textab(0) extrapolating tosimeq 92 T<missing VAR>, well above the BCS paramagnetic limit.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[400.0, 63, 'T', 4],[276.0, 14, 'T', 3],[260.0, 63, 'T', 3],[199.0, 25, 'K', 2],[70.0, 5.8, ',', 1],[58.0, 14.3, ',', 1]

BCS
###Anisotropic magnetoresistance and upper critical fields up to 63 T in CaKFe$_4$As$_4$ single crystals|Tai Kong,Fedor F. Balakirev,William R. Meier,Sergey L. Bud'ko,Alex Gurevich,Paul C. Canfield###
(1521128, 1521130)
 The behavior ofHc<missing VAR>text2(T) turns out to be similar to that of the optimal doped(Ba,K)Fe2As2, with Hc<missing VAR>text2textab(0) extrapolating tosimeq 92 T<missing VAR>, well above the BCS paramagnetic limit.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[428.0, 63, 'T', 4],[304.0, 14, 'T', 3],[288.0, 63, 'T', 3],[227.0, 25, 'K', 2],[98.0, 5.8, ',', 1],[86.0, 14.3, ',', 1]

PrAlO3/SrTiO3
###Spin-Orbit Interaction and Kondo Scattering at the PrAlO$_3$/SrTiO$_3$ Interface: Effects of Oxygen Content|Shirin Mozaffari,Samaresh Guchhait,John T. Markert###
(1521161, 1521169)
Spin-Orbit Interaction and Kondo Scattering at the PrAlO3/SrTiO3 Interface Effects of Oxygen Content.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

(PO2)
###Spin-Orbit Interaction and Kondo Scattering at the PrAlO$_3$/SrTiO$_3$ Interface: Effects of Oxygen Content|Shirin Mozaffari,Samaresh Guchhait,John T. Markert###
(1521200, 1521204)
 We report the effect of oxygen pressure during growth (PO2) on theelectronic and magnetic properties of PrAlO3 films grown on rmTiO2-terminated SrTiO3 substrates.
Featurization successful!
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PrAlO3
###Spin-Orbit Interaction and Kondo Scattering at the PrAlO$_3$/SrTiO$_3$ Interface: Effects of Oxygen Content|Shirin Mozaffari,Samaresh Guchhait,John T. Markert###
(1521221, 1521224)
 We report the effect of oxygen pressure during growth (PO2) on theelectronic and magnetic properties of PrAlO3 films grown on rmTiO2-terminated SrTiO3 substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TiO2
###Spin-Orbit Interaction and Kondo Scattering at the PrAlO$_3$/SrTiO$_3$ Interface: Effects of Oxygen Content|Shirin Mozaffari,Samaresh Guchhait,John T. Markert###
(1521235, 1521237)
 We report the effect of oxygen pressure during growth (PO2) on theelectronic and magnetic properties of PrAlO3 films grown on rmTiO2-terminated SrTiO3 substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Spin-Orbit Interaction and Kondo Scattering at the PrAlO$_3$/SrTiO$_3$ Interface: Effects of Oxygen Content|Shirin Mozaffari,Samaresh Guchhait,John T. Markert###
(1521241, 1521244)
 We report the effect of oxygen pressure during growth (PO2) on theelectronic and magnetic properties of PrAlO3 films grown on rmTiO2-terminated SrTiO3 substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PO2
###Spin-Orbit Interaction and Kondo Scattering at the PrAlO$_3$/SrTiO$_3$ Interface: Effects of Oxygen Content|Shirin Mozaffari,Samaresh Guchhait,John T. Markert###
(1521270, 1521272)
 Resistivity measurements show anincrease in the sheet resistance as PO2 is increased.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PO2
###Spin-Orbit Interaction and Kondo Scattering at the PrAlO$_3$/SrTiO$_3$ Interface: Effects of Oxygen Content|Shirin Mozaffari,Samaresh Guchhait,John T. Markert###
(1521313, 1521315)
 The temperaturedependence of the sheet resistance at low temperatures is consistent with Kondotheory for PO2 ge 10-5 torr.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PO2
###Spin-Orbit Interaction and Kondo Scattering at the PrAlO$_3$/SrTiO$_3$ Interface: Effects of Oxygen Content|Shirin Mozaffari,Samaresh Guchhait,John T. Markert###
(1521386, 1521388)
 We observebehavior consistent with two different types of carriers at interfaces grown atPO2 ge 10-4 torr.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(SO)
###Spin-Orbit Interaction and Kondo Scattering at the PrAlO$_3$/SrTiO$_3$ Interface: Effects of Oxygen Content|Shirin Mozaffari,Samaresh Guchhait,John T. Markert###
(1521436, 1521439)
 For these interfaces, we measured a moderatepositive magnetoresistance (MR) due to a strong spin-orbit (SO) interaction atlow magnetic fields that evolves into a larger negative MR at high fields.
Featurization successful!
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Spin-Orbit Interaction and Kondo Scattering at the PrAlO$_3$/SrTiO$_3$ Interface: Effects of Oxygen Content|Shirin Mozaffari,Samaresh Guchhait,John T. Markert###
(1521536, 1521537)
 Analysis of the MR data permittedthe extraction of the SO interaction critical field ( e.g.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HSO1.25
###Spin-Orbit Interaction and Kondo Scattering at the PrAlO$_3$/SrTiO$_3$ Interface: Effects of Oxygen Content|Shirin Mozaffari,Samaresh Guchhait,John T. Markert###
(1521553, 1521556)
  HSO1.25 T<missing VAR> forPO210-5 torr).
Featurization terminated normally.
0.3076923076923077,0,0,0,0,0,0,0.38461538461538464,0,0,0,0,0,0,0,0.3076923076923077,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PO210
###Spin-Orbit Interaction and Kondo Scattering at the PrAlO$_3$/SrTiO$_3$ Interface: Effects of Oxygen Content|Shirin Mozaffari,Samaresh Guchhait,John T. Markert###
(1521563, 1521566)
  HSO1.25 T<missing VAR> forPO210-5 torr).
Featurization terminated normally.
0,0,0,0,0,0,0,0.995260663507109,0,0,0,0,0,0,0.004739336492890996,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Spin-Orbit Interaction and Kondo Scattering at the PrAlO$_3$/SrTiO$_3$ Interface: Effects of Oxygen Content|Shirin Mozaffari,Samaresh Guchhait,John T. Markert###
(1521592, 1521593)
 The weak anti-localization effect due to a strong SOinteraction becomes smaller for higher PO2 grown samples, where MRvalues are dominated by the Kondo effect, particularly at high magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PO2
###Spin-Orbit Interaction and Kondo Scattering at the PrAlO$_3$/SrTiO$_3$ Interface: Effects of Oxygen Content|Shirin Mozaffari,Samaresh Guchhait,John T. Markert###
(1521606, 1521608)
 The weak anti-localization effect due to a strong SOinteraction becomes smaller for higher PO2 grown samples, where MRvalues are dominated by the Kondo effect, particularly at high magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni3C12S12
###Conetronics in 2D Metal-Organic Frameworks: Double Dirac Cones, Magnetic Half Dirac Cones and Quantum Anomalous Hall Effect|Menghao Wu,Zhijun Wang,Junwei Liu,Huahua Fu,Lei Sun,Xin Liu,Minghu Pan,Hongming Weng,Mircea Dinca,Liang Fu,Ju Li###
(1521700, 1521705)
 Based on recently synthesized Ni3C12S12 class 2D metal-organic frameworks, wepredict electronic properties of M<missing VAR>3C12S12 and M<missing VAR>3C12O12, where M<missing VAR> is Zn, Cd, Hg,Be, or Mg with no M<missing VAR> orbital contributions to bands near Fermi level.
Featurization terminated normally.
0,0,0,0,0,0.4444444444444444,0,0,0,0,0,0,0,0,0,0.4444444444444444,0,0,0,0,0,0,0,0,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 2, 'D', 1],[3.0, 2, 'D', 0],[187.0, 2, 'D', 2],[349.0, 2, ',', 4]

C12S12
###Conetronics in 2D Metal-Organic Frameworks: Double Dirac Cones, Magnetic Half Dirac Cones and Quantum Anomalous Hall Effect|Menghao Wu,Zhijun Wang,Junwei Liu,Huahua Fu,Lei Sun,Xin Liu,Minghu Pan,Hongming Weng,Mircea Dinca,Liang Fu,Ju Li###
(1521730, 1521733)
 Based on recently synthesized Ni3C12S12 class 2D metal-organic frameworks, wepredict electronic properties of M<missing VAR>3C12S12 and M<missing VAR>3C12O12, where M<missing VAR> is Zn, Cd, Hg,Be, or Mg with no M<missing VAR> orbital contributions to bands near Fermi level.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 2, 'D', 1],[22.0, 2, 'D', 0],[159.0, 2, 'D', 2],[321.0, 2, ',', 4]

C12O12
###Conetronics in 2D Metal-Organic Frameworks: Double Dirac Cones, Magnetic Half Dirac Cones and Quantum Anomalous Hall Effect|Menghao Wu,Zhijun Wang,Junwei Liu,Huahua Fu,Lei Sun,Xin Liu,Minghu Pan,Hongming Weng,Mircea Dinca,Liang Fu,Ju Li###
(1521739, 1521742)
 Based on recently synthesized Ni3C12S12 class 2D metal-organic frameworks, wepredict electronic properties of M<missing VAR>3C12S12 and M<missing VAR>3C12O12, where M<missing VAR> is Zn, Cd, Hg,Be, or Mg with no M<missing VAR> orbital contributions to bands near Fermi level.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 2, 'D', 1],[31.0, 2, 'D', 0],[150.0, 2, 'D', 2],[312.0, 2, ',', 4]

Zn
###Conetronics in 2D Metal-Organic Frameworks: Double Dirac Cones, Magnetic Half Dirac Cones and Quantum Anomalous Hall Effect|Menghao Wu,Zhijun Wang,Junwei Liu,Huahua Fu,Lei Sun,Xin Liu,Minghu Pan,Hongming Weng,Mircea Dinca,Liang Fu,Ju Li###
(1521751, 1521751)
 Based on recently synthesized Ni3C12S12 class 2D metal-organic frameworks, wepredict electronic properties of M<missing VAR>3C12S12 and M<missing VAR>3C12O12, where M<missing VAR> is Zn, Cd, Hg,Be, or Mg with no M<missing VAR> orbital contributions to bands near Fermi level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 2, 'D', 1],[43.0, 2, 'D', 0],[141.0, 2, 'D', 2],[303.0, 2, ',', 4]

Cd
###Conetronics in 2D Metal-Organic Frameworks: Double Dirac Cones, Magnetic Half Dirac Cones and Quantum Anomalous Hall Effect|Menghao Wu,Zhijun Wang,Junwei Liu,Huahua Fu,Lei Sun,Xin Liu,Minghu Pan,Hongming Weng,Mircea Dinca,Liang Fu,Ju Li###
(1521754, 1521754)
 Based on recently synthesized Ni3C12S12 class 2D metal-organic frameworks, wepredict electronic properties of M<missing VAR>3C12S12 and M<missing VAR>3C12O12, where M<missing VAR> is Zn, Cd, Hg,Be, or Mg with no M<missing VAR> orbital contributions to bands near Fermi level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 2, 'D', 1],[46.0, 2, 'D', 0],[138.0, 2, 'D', 2],[300.0, 2, ',', 4]

Hg
###Conetronics in 2D Metal-Organic Frameworks: Double Dirac Cones, Magnetic Half Dirac Cones and Quantum Anomalous Hall Effect|Menghao Wu,Zhijun Wang,Junwei Liu,Huahua Fu,Lei Sun,Xin Liu,Minghu Pan,Hongming Weng,Mircea Dinca,Liang Fu,Ju Li###
(1521757, 1521757)
 Based on recently synthesized Ni3C12S12 class 2D metal-organic frameworks, wepredict electronic properties of M<missing VAR>3C12S12 and M<missing VAR>3C12O12, where M<missing VAR> is Zn, Cd, Hg,Be, or Mg with no M<missing VAR> orbital contributions to bands near Fermi level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 2, 'D', 1],[49.0, 2, 'D', 0],[135.0, 2, 'D', 2],[297.0, 2, ',', 4]

Be
###Conetronics in 2D Metal-Organic Frameworks: Double Dirac Cones, Magnetic Half Dirac Cones and Quantum Anomalous Hall Effect|Menghao Wu,Zhijun Wang,Junwei Liu,Huahua Fu,Lei Sun,Xin Liu,Minghu Pan,Hongming Weng,Mircea Dinca,Liang Fu,Ju Li###
(1521761, 1521761)
 Based on recently synthesized Ni3C12S12 class 2D metal-organic frameworks, wepredict electronic properties of M<missing VAR>3C12S12 and M<missing VAR>3C12O12, where M<missing VAR> is Zn, Cd, Hg,Be, or Mg with no M<missing VAR> orbital contributions to bands near Fermi level.
Featurization terminated normally.
0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 2, 'D', 1],[53.0, 2, 'D', 0],[131.0, 2, 'D', 2],[293.0, 2, ',', 4]

Mg
###Conetronics in 2D Metal-Organic Frameworks: Double Dirac Cones, Magnetic Half Dirac Cones and Quantum Anomalous Hall Effect|Menghao Wu,Zhijun Wang,Junwei Liu,Huahua Fu,Lei Sun,Xin Liu,Minghu Pan,Hongming Weng,Mircea Dinca,Liang Fu,Ju Li###
(1521766, 1521766)
 Based on recently synthesized Ni3C12S12 class 2D metal-organic frameworks, wepredict electronic properties of M<missing VAR>3C12S12 and M<missing VAR>3C12O12, where M<missing VAR> is Zn, Cd, Hg,Be, or Mg with no M<missing VAR> orbital contributions to bands near Fermi level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 2, 'D', 1],[58.0, 2, 'D', 0],[126.0, 2, 'D', 2],[288.0, 2, ',', 4]

C12S12
###Conetronics in 2D Metal-Organic Frameworks: Double Dirac Cones, Magnetic Half Dirac Cones and Quantum Anomalous Hall Effect|Menghao Wu,Zhijun Wang,Junwei Liu,Huahua Fu,Lei Sun,Xin Liu,Minghu Pan,Hongming Weng,Mircea Dinca,Liang Fu,Ju Li###
(1521794, 1521797)
 ForM<missing VAR>3C12S12, their band structures exhibit double Dirac cones with different Fermivelocities that are n<missing VAR> and p<missing VAR> type, respectively, which are switchable byfew-percent strain.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 2, 'D', 2],[86.0, 2, 'D', 1],[95.0, 2, 'D', 1],[257.0, 2, ',', 3]

C12O12
###Conetronics in 2D Metal-Organic Frameworks: Double Dirac Cones, Magnetic Half Dirac Cones and Quantum Anomalous Hall Effect|Menghao Wu,Zhijun Wang,Junwei Liu,Huahua Fu,Lei Sun,Xin Liu,Minghu Pan,Hongming Weng,Mircea Dinca,Liang Fu,Ju Li###
(1522027, 1522030)
 For M<missing VAR>3C12O12, together with conjugatedmetal-tricatecholate polymers M<missing VAR>3(HHT<missing VAR>P)2, the spin-polarized slow Dirac conecenter is pinned precisely at the Fermi level, making the systems conducting inonly one spin or cone channel.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[369.0, 2, 'D', 5],[319.0, 2, 'D', 4],[135.0, 2, 'D', 2],[24.0, 2, ',', 0]

HH
###Conetronics in 2D Metal-Organic Frameworks: Double Dirac Cones, Magnetic Half Dirac Cones and Quantum Anomalous Hall Effect|Menghao Wu,Zhijun Wang,Junwei Liu,Huahua Fu,Lei Sun,Xin Liu,Minghu Pan,Hongming Weng,Mircea Dinca,Liang Fu,Ju Li###
(1522049, 1522050)
 For M<missing VAR>3C12O12, together with conjugatedmetal-tricatecholate polymers M<missing VAR>3(HHT<missing VAR>P)2, the spin-polarized slow Dirac conecenter is pinned precisely at the Fermi level, making the systems conducting inonly one spin or cone channel.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[391.0, 2, 'D', 5],[341.0, 2, 'D', 4],[157.0, 2, 'D', 2],[4.0, 2, ',', 0]

P
###Conetronics in 2D Metal-Organic Frameworks: Double Dirac Cones, Magnetic Half Dirac Cones and Quantum Anomalous Hall Effect|Menghao Wu,Zhijun Wang,Junwei Liu,Huahua Fu,Lei Sun,Xin Liu,Minghu Pan,Hongming Weng,Mircea Dinca,Liang Fu,Ju Li###
(1522052, 1522052)
 For M<missing VAR>3C12O12, together with conjugatedmetal-tricatecholate polymers M<missing VAR>3(HHT<missing VAR>P)2, the spin-polarized slow Dirac conecenter is pinned precisely at the Fermi level, making the systems conducting inonly one spin or cone channel.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[394.0, 2, 'D', 5],[344.0, 2, 'D', 4],[160.0, 2, 'D', 2],[2.0, 2, ',', 0]

O
###Conetronics in 2D Metal-Organic Frameworks: Double Dirac Cones, Magnetic Half Dirac Cones and Quantum Anomalous Hall Effect|Menghao Wu,Zhijun Wang,Junwei Liu,Huahua Fu,Lei Sun,Xin Liu,Minghu Pan,Hongming Weng,Mircea Dinca,Liang Fu,Ju Li###
(1522126, 1522126)
 Quantum anomalous Hall effect can arise in M<missing VAR>OFswith non-negligible spin-orbit coupling like Cu3C12O12.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[468.0, 2, 'D', 6],[418.0, 2, 'D', 5],[234.0, 2, 'D', 3],[72.0, 2, ',', 1]

Cu3C12O12
###Conetronics in 2D Metal-Organic Frameworks: Double Dirac Cones, Magnetic Half Dirac Cones and Quantum Anomalous Hall Effect|Menghao Wu,Zhijun Wang,Junwei Liu,Huahua Fu,Lei Sun,Xin Liu,Minghu Pan,Hongming Weng,Mircea Dinca,Liang Fu,Ju Li###
(1522144, 1522149)
 Quantum anomalous Hall effect can arise in M<missing VAR>OFswith non-negligible spin-orbit coupling like Cu3C12O12.
Featurization terminated normally.
0,0,0,0,0,0.4444444444444444,0,0.4444444444444444,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[486.0, 2, 'D', 6],[436.0, 2, 'D', 5],[252.0, 2, 'D', 3],[90.0, 2, ',', 1]

C12S12
###Conetronics in 2D Metal-Organic Frameworks: Double Dirac Cones, Magnetic Half Dirac Cones and Quantum Anomalous Hall Effect|Menghao Wu,Zhijun Wang,Junwei Liu,Huahua Fu,Lei Sun,Xin Liu,Minghu Pan,Hongming Weng,Mircea Dinca,Liang Fu,Ju Li###
(1522158, 1522161)
 Compounds of M<missing VAR>3C12S12and M<missing VAR>3C12O12 with different M<missing VAR>, can be used to build spintronic andcone-selecting heterostructure devices, tunable by strain or electrostaticgating.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[500.0, 2, 'D', 7],[450.0, 2, 'D', 6],[266.0, 2, 'D', 4],[104.0, 2, ',', 2]

C12O12
###Conetronics in 2D Metal-Organic Frameworks: Double Dirac Cones, Magnetic Half Dirac Cones and Quantum Anomalous Hall Effect|Menghao Wu,Zhijun Wang,Junwei Liu,Huahua Fu,Lei Sun,Xin Liu,Minghu Pan,Hongming Weng,Mircea Dinca,Liang Fu,Ju Li###
(1522168, 1522171)
 Compounds of M<missing VAR>3C12S12and M<missing VAR>3C12O12 with different M<missing VAR>, can be used to build spintronic andcone-selecting heterostructure devices, tunable by strain or electrostaticgating.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[510.0, 2, 'D', 7],[460.0, 2, 'D', 6],[276.0, 2, 'D', 4],[114.0, 2, ',', 2]

At
###Discrimination between spin-dependent charge transport and spin dependent recombination in π-conjugated polymers by correlated current and electroluminescence-detected magnetic resonance|Marzieh Kavand,Douglas Baird,Kipp van Schooten,Hans Malissa,John M. Lupton,Christoph Boehme###
(1522573, 1522573)
 Atroom temperature and under bipolar charge-carrier injection conditions, acorrelation of the pEDMR and the pODMR signals is observed, consistent with thehypothesis that the recombination currents involve spin-dependent electronictransitions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Discrimination between spin-dependent charge transport and spin dependent recombination in π-conjugated polymers by correlated current and electroluminescence-detected magnetic resonance|Marzieh Kavand,Douglas Baird,Kipp van Schooten,Hans Malissa,John M. Lupton,Christoph Boehme###
(1522739, 1522739)
 At lowtemperatures, however, the correlation between pEDMR and pODMR is weakened,demonstrating that more than one spin-dependent process influences theoptoelectronic materials properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LiTi2O4
###Anisotropic electron-phonon coupling in the spinel oxide superconductor|Ge He,Yanli Jia,Xingyuan Hou,Zhongxu Wei,Haidong Xie,Zhenzhong Yang,Jinan Shi,Jie Yuan,Lei Shan,Beiyi Zhu,Hong Li,Lin Gu,Kai Liu,Tao Xiang,Kui Jin###
(1523292, 1523296)
 Among hundreds of spinel oxides, LiTi2O4 (LTO) is the only one that exhibitssuperconductivity (Tc 13 K).
Featurization terminated normally.
0,0,0.14285714285714285,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[246.0, 2, 'Tc', 4]

O
###Anisotropic electron-phonon coupling in the spinel oxide superconductor|Ge He,Yanli Jia,Xingyuan Hou,Zhongxu Wei,Haidong Xie,Zhenzhong Yang,Jinan Shi,Jie Yuan,Lei Shan,Beiyi Zhu,Hong Li,Lin Gu,Kai Liu,Tao Xiang,Kui Jin###
(1523301, 1523301)
 Among hundreds of spinel oxides, LiTi2O4 (LTO) is the only one that exhibitssuperconductivity (Tc 13 K).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[241.0, 2, 'Tc', 4]

Tc
###Anisotropic electron-phonon coupling in the spinel oxide superconductor|Ge He,Yanli Jia,Xingyuan Hou,Zhongxu Wei,Haidong Xie,Zhenzhong Yang,Jinan Shi,Jie Yuan,Lei Shan,Beiyi Zhu,Hong Li,Lin Gu,Kai Liu,Tao Xiang,Kui Jin###
(1523320, 1523320)
 Among hundreds of spinel oxides, LiTi2O4 (LTO) is the only one that exhibitssuperconductivity (Tc 13 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[222.0, 2, 'Tc', 4]

K
###Anisotropic electron-phonon coupling in the spinel oxide superconductor|Ge He,Yanli Jia,Xingyuan Hou,Zhongxu Wei,Haidong Xie,Zhenzhong Yang,Jinan Shi,Jie Yuan,Lei Shan,Beiyi Zhu,Hong Li,Lin Gu,Kai Liu,Tao Xiang,Kui Jin###
(1523324, 1523324)
 Among hundreds of spinel oxides, LiTi2O4 (LTO) is the only one that exhibitssuperconductivity (Tc 13 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[218.0, 2, 'Tc', 4]

O
###Anisotropic electron-phonon coupling in the spinel oxide superconductor|Ge He,Yanli Jia,Xingyuan Hou,Zhongxu Wei,Haidong Xie,Zhenzhong Yang,Jinan Shi,Jie Yuan,Lei Shan,Beiyi Zhu,Hong Li,Lin Gu,Kai Liu,Tao Xiang,Kui Jin###
(1523361, 1523361)
 Although the general electron-phonon coupling isstill the main mechanism for electron pairing in LTO, unconventional behaviorssuch as the anomalous magnetoresistance, anisotropic orbital/spinsusceptibilities, etc.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 2, 'Tc', 3]

O
###Anisotropic electron-phonon coupling in the spinel oxide superconductor|Ge He,Yanli Jia,Xingyuan Hou,Zhongxu Wei,Haidong Xie,Zhenzhong Yang,Jinan Shi,Jie Yuan,Lei Shan,Beiyi Zhu,Hong Li,Lin Gu,Kai Liu,Tao Xiang,Kui Jin###
(1523469, 1523469)
 Here, weinvestigate tunneling spectra of [111]-, [110]- and [001]-oriented high qualityLTO thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 2, 'Tc', 1]

O
###Anisotropic electron-phonon coupling in the spinel oxide superconductor|Ge He,Yanli Jia,Xingyuan Hou,Zhongxu Wei,Haidong Xie,Zhenzhong Yang,Jinan Shi,Jie Yuan,Lei Shan,Beiyi Zhu,Hong Li,Lin Gu,Kai Liu,Tao Xiang,Kui Jin###
(1523620, 1523620)
 These modesonly appear in special surface orientations, indicating that theelectron-phonon coupling in LTO system is highly anisotropic and may beenhanced by orbital-related state.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 2, 'Tc', 1]

O
###Anisotropic electron-phonon coupling in the spinel oxide superconductor|Ge He,Yanli Jia,Xingyuan Hou,Zhongxu Wei,Haidong Xie,Zhenzhong Yang,Jinan Shi,Jie Yuan,Lei Shan,Beiyi Zhu,Hong Li,Lin Gu,Kai Liu,Tao Xiang,Kui Jin###
(1523679, 1523679)
 The anisotropic electron-phonon couplingshould be taken seriously in understanding the nature of LTO superconductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 2, 'Tc', 2]

BNC
###Finite bias dependent evolution of superconductor-insulator transition and Zero Bias Conductance in boron doped nanodiamond films|Davie Mtsuko,Christopher Coleman,Somnath Bhattacharyya###
(1523751, 1523753)
 We report on transport features in heavily boron doped nanocrystallinediamond (BNCD) films which are not seen in conventional (s<missing VAR>-wave) granularsuperconductors.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Finite bias dependent evolution of superconductor-insulator transition and Zero Bias Conductance in boron doped nanodiamond films|Davie Mtsuko,Christopher Coleman,Somnath Bhattacharyya###
(1523930, 1523930)
 As the bias current is lowered the resistance peak becomesmore pronounced whereas when the magnetic field is varied the peak shiftstowards lower temperatures, the resistance upturn shows a quadratic temperaturedependence as expected for a Kondo transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Spin Filtering through Single-Wall Carbon Nanotubes Functionalized with Single-Stranded DNA|Kazi M. Alam,Sandipan Pramanik###
(1524170, 1524170)
Spin Filtering through Single-Wall Carbon Nanotubes Functionalized with Single-Stranded D<missing VAR>NA.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 50, '%', 4],[260.0, 74, '%', 6]

SWCN
###Spin Filtering through Single-Wall Carbon Nanotubes Functionalized with Single-Stranded DNA|Kazi M. Alam,Sandipan Pramanik###
(1524358, 1524361)
Here we consider carrier transport in an archetypical one-dimensional molecularhybrid in which a single wall carbon nanotube (SWCNT) is wrapped around bysingle stranded deoxyribonucleic acid (ssD<missing VAR>NA).
Featurization terminated normally.
0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 50, '%', 1],[69.0, 74, '%', 1]

N
###Spin Filtering through Single-Wall Carbon Nanotubes Functionalized with Single-Stranded DNA|Kazi M. Alam,Sandipan Pramanik###
(1524385, 1524385)
Here we consider carrier transport in an archetypical one-dimensional molecularhybrid in which a single wall carbon nanotube (SWCNT) is wrapped around bysingle stranded deoxyribonucleic acid (ssD<missing VAR>NA).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 50, '%', 1],[45.0, 74, '%', 1]

N
###Spin Filtering through Single-Wall Carbon Nanotubes Functionalized with Single-Stranded DNA|Kazi M. Alam,Sandipan Pramanik###
(1524475, 1524475)
 Inversion asymmetrichelicoidal potential of the charged ssD<missing VAR>NA backbone induces a Rashba spin-orbitinteraction in the SWCNT<missing VAR> channel and polarizes carrier spins.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 50, '%', 3],[45.0, 74, '%', 1]

SWCN
###Spin Filtering through Single-Wall Carbon Nanotubes Functionalized with Single-Stranded DNA|Kazi M. Alam,Sandipan Pramanik###
(1524497, 1524500)
 Inversion asymmetrichelicoidal potential of the charged ssD<missing VAR>NA backbone induces a Rashba spin-orbitinteraction in the SWCNT<missing VAR> channel and polarizes carrier spins.
Featurization terminated normally.
0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 50, '%', 3],[67.0, 74, '%', 1]

N
###Spin Filtering through Single-Wall Carbon Nanotubes Functionalized with Single-Stranded DNA|Kazi M. Alam,Sandipan Pramanik###
(1524546, 1524546)
 Our results areconsistent with recent theoretical work that predicted spin dependentconductance in ssD<missing VAR>NA-SWCNT<missing VAR> hybrid.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[237.0, 50, '%', 4],[116.0, 74, '%', 2]

SWCN
###Spin Filtering through Single-Wall Carbon Nanotubes Functionalized with Single-Stranded DNA|Kazi M. Alam,Sandipan Pramanik###
(1524549, 1524552)
 Our results areconsistent with recent theoretical work that predicted spin dependentconductance in ssD<missing VAR>NA-SWCNT<missing VAR> hybrid.
Featurization terminated normally.
0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[240.0, 50, '%', 4],[119.0, 74, '%', 2]

K
###Thermoelectric power factor enhancement by spin-polarized currents - a nanowire case study|Anna Corinna Niemann,Tim Böhnert,Ann-Kathrin Michel,Svenja Bäßler,Bernd Gotsmann,Katalin Neuróhr,Bence Tóth,László Péter,Imre Bakonyi,Victor Vega,Victor M. Prida,Johannes Gooth,Kornelius Nielsch###
(1524754, 1524754)
 The temperature-dependent (50-300 K)and magnetic field-dependent (up to 1 T) TE power factor (PF) has beendetermined for several Co-Ni alloy nanowires with varying CoNi ratios as wellas for Co-Ni/Cu multilayered nanowires with various Cu layer thicknesses, whichwere all synthesized via a template-assisted electrodeposition process.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 1, 'T', 0],[189.0, 3.6, 'mWK', 2],[206.0, 2.0, 'mWK', 2]

(PF)
###Thermoelectric power factor enhancement by spin-polarized currents - a nanowire case study|Anna Corinna Niemann,Tim Böhnert,Ann-Kathrin Michel,Svenja Bäßler,Bernd Gotsmann,Katalin Neuróhr,Bence Tóth,László Péter,Imre Bakonyi,Victor Vega,Victor M. Prida,Johannes Gooth,Kornelius Nielsch###
(1524780, 1524783)
 The temperature-dependent (50-300 K)and magnetic field-dependent (up to 1 T) TE power factor (PF) has beendetermined for several Co-Ni alloy nanowires with varying CoNi ratios as wellas for Co-Ni/Cu multilayered nanowires with various Cu layer thicknesses, whichwere all synthesized via a template-assisted electrodeposition process.
Featurization successful!
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 1, 'T', 0],[160.0, 3.6, 'mWK', 2],[177.0, 2.0, 'mWK', 2]

Co
###Thermoelectric power factor enhancement by spin-polarized currents - a nanowire case study|Anna Corinna Niemann,Tim Böhnert,Ann-Kathrin Michel,Svenja Bäßler,Bernd Gotsmann,Katalin Neuróhr,Bence Tóth,László Péter,Imre Bakonyi,Victor Vega,Victor M. Prida,Johannes Gooth,Kornelius Nielsch###
(1524796, 1524796)
 The temperature-dependent (50-300 K)and magnetic field-dependent (up to 1 T) TE power factor (PF) has beendetermined for several Co-Ni alloy nanowires with varying CoNi ratios as wellas for Co-Ni/Cu multilayered nanowires with various Cu layer thicknesses, whichwere all synthesized via a template-assisted electrodeposition process.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 1, 'T', 0],[147.0, 3.6, 'mWK', 2],[164.0, 2.0, 'mWK', 2]

Ni
###Thermoelectric power factor enhancement by spin-polarized currents - a nanowire case study|Anna Corinna Niemann,Tim Böhnert,Ann-Kathrin Michel,Svenja Bäßler,Bernd Gotsmann,Katalin Neuróhr,Bence Tóth,László Péter,Imre Bakonyi,Victor Vega,Victor M. Prida,Johannes Gooth,Kornelius Nielsch###
(1524798, 1524798)
 The temperature-dependent (50-300 K)and magnetic field-dependent (up to 1 T) TE power factor (PF) has beendetermined for several Co-Ni alloy nanowires with varying CoNi ratios as wellas for Co-Ni/Cu multilayered nanowires with various Cu layer thicknesses, whichwere all synthesized via a template-assisted electrodeposition process.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 1, 'T', 0],[145.0, 3.6, 'mWK', 2],[162.0, 2.0, 'mWK', 2]

CoNi
###Thermoelectric power factor enhancement by spin-polarized currents - a nanowire case study|Anna Corinna Niemann,Tim Böhnert,Ann-Kathrin Michel,Svenja Bäßler,Bernd Gotsmann,Katalin Neuróhr,Bence Tóth,László Péter,Imre Bakonyi,Victor Vega,Victor M. Prida,Johannes Gooth,Kornelius Nielsch###
(1524808, 1524809)
 The temperature-dependent (50-300 K)and magnetic field-dependent (up to 1 T) TE power factor (PF) has beendetermined for several Co-Ni alloy nanowires with varying CoNi ratios as wellas for Co-Ni/Cu multilayered nanowires with various Cu layer thicknesses, whichwere all synthesized via a template-assisted electrodeposition process.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 1, 'T', 0],[134.0, 3.6, 'mWK', 2],[151.0, 2.0, 'mWK', 2]

Co
###Thermoelectric power factor enhancement by spin-polarized currents - a nanowire case study|Anna Corinna Niemann,Tim Böhnert,Ann-Kathrin Michel,Svenja Bäßler,Bernd Gotsmann,Katalin Neuróhr,Bence Tóth,László Péter,Imre Bakonyi,Victor Vega,Victor M. Prida,Johannes Gooth,Kornelius Nielsch###
(1524822, 1524822)
 The temperature-dependent (50-300 K)and magnetic field-dependent (up to 1 T) TE power factor (PF) has beendetermined for several Co-Ni alloy nanowires with varying CoNi ratios as wellas for Co-Ni/Cu multilayered nanowires with various Cu layer thicknesses, whichwere all synthesized via a template-assisted electrodeposition process.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 1, 'T', 0],[121.0, 3.6, 'mWK', 2],[138.0, 2.0, 'mWK', 2]

Ni/Cu
###Thermoelectric power factor enhancement by spin-polarized currents - a nanowire case study|Anna Corinna Niemann,Tim Böhnert,Ann-Kathrin Michel,Svenja Bäßler,Bernd Gotsmann,Katalin Neuróhr,Bence Tóth,László Péter,Imre Bakonyi,Victor Vega,Victor M. Prida,Johannes Gooth,Kornelius Nielsch###
(1524824, 1524826)
 The temperature-dependent (50-300 K)and magnetic field-dependent (up to 1 T) TE power factor (PF) has beendetermined for several Co-Ni alloy nanowires with varying CoNi ratios as wellas for Co-Ni/Cu multilayered nanowires with various Cu layer thicknesses, whichwere all synthesized via a template-assisted electrodeposition process.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[54.0, 1, 'T', 0],[117.0, 3.6, 'mWK', 2],[134.0, 2.0, 'mWK', 2]

Cu
###Thermoelectric power factor enhancement by spin-polarized currents - a nanowire case study|Anna Corinna Niemann,Tim Böhnert,Ann-Kathrin Michel,Svenja Bäßler,Bernd Gotsmann,Katalin Neuróhr,Bence Tóth,László Péter,Imre Bakonyi,Victor Vega,Victor M. Prida,Johannes Gooth,Kornelius Nielsch###
(1524836, 1524836)
 The temperature-dependent (50-300 K)and magnetic field-dependent (up to 1 T) TE power factor (PF) has beendetermined for several Co-Ni alloy nanowires with varying CoNi ratios as wellas for Co-Ni/Cu multilayered nanowires with various Cu layer thicknesses, whichwere all synthesized via a template-assisted electrodeposition process.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 1, 'T', 0],[107.0, 3.6, 'mWK', 2],[124.0, 2.0, 'mWK', 2]

Co
###Thermoelectric power factor enhancement by spin-polarized currents - a nanowire case study|Anna Corinna Niemann,Tim Böhnert,Ann-Kathrin Michel,Svenja Bäßler,Bernd Gotsmann,Katalin Neuróhr,Bence Tóth,László Péter,Imre Bakonyi,Victor Vega,Victor M. Prida,Johannes Gooth,Kornelius Nielsch###
(1524899, 1524899)
 Asystematic investigation of the resistivity, as well as the Seebeckcoefficient, is performed for Co-Ni alloy nanowires and Co-Ni/Cu multilayerednanowires.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 1, 'T', 1],[44.0, 3.6, 'mWK', 1],[61.0, 2.0, 'mWK', 1]

Ni
###Thermoelectric power factor enhancement by spin-polarized currents - a nanowire case study|Anna Corinna Niemann,Tim Böhnert,Ann-Kathrin Michel,Svenja Bäßler,Bernd Gotsmann,Katalin Neuróhr,Bence Tóth,László Péter,Imre Bakonyi,Victor Vega,Victor M. Prida,Johannes Gooth,Kornelius Nielsch###
(1524901, 1524901)
 Asystematic investigation of the resistivity, as well as the Seebeckcoefficient, is performed for Co-Ni alloy nanowires and Co-Ni/Cu multilayerednanowires.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 1, 'T', 1],[42.0, 3.6, 'mWK', 1],[59.0, 2.0, 'mWK', 1]

Co
###Thermoelectric power factor enhancement by spin-polarized currents - a nanowire case study|Anna Corinna Niemann,Tim Böhnert,Ann-Kathrin Michel,Svenja Bäßler,Bernd Gotsmann,Katalin Neuróhr,Bence Tóth,László Péter,Imre Bakonyi,Victor Vega,Victor M. Prida,Johannes Gooth,Kornelius Nielsch###
(1524909, 1524909)
 Asystematic investigation of the resistivity, as well as the Seebeckcoefficient, is performed for Co-Ni alloy nanowires and Co-Ni/Cu multilayerednanowires.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 1, 'T', 1],[34.0, 3.6, 'mWK', 1],[51.0, 2.0, 'mWK', 1]

Ni/Cu
###Thermoelectric power factor enhancement by spin-polarized currents - a nanowire case study|Anna Corinna Niemann,Tim Böhnert,Ann-Kathrin Michel,Svenja Bäßler,Bernd Gotsmann,Katalin Neuróhr,Bence Tóth,László Péter,Imre Bakonyi,Victor Vega,Victor M. Prida,Johannes Gooth,Kornelius Nielsch###
(1524911, 1524913)
 Asystematic investigation of the resistivity, as well as the Seebeckcoefficient, is performed for Co-Ni alloy nanowires and Co-Ni/Cu multilayerednanowires.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[141.0, 1, 'T', 1],[30.0, 3.6, 'mWK', 1],[47.0, 2.0, 'mWK', 1]

At
###Thermoelectric power factor enhancement by spin-polarized currents - a nanowire case study|Anna Corinna Niemann,Tim Böhnert,Ann-Kathrin Michel,Svenja Bäßler,Bernd Gotsmann,Katalin Neuróhr,Bence Tóth,László Péter,Imre Bakonyi,Victor Vega,Victor M. Prida,Johannes Gooth,Kornelius Nielsch###
(1524921, 1524921)
 At room temperature, measured values of TE PFs up to 3.6 mWK-2m<missing VAR>-1for AMR samples and 2.0 mWK-2m<missing VAR>-1 for GMR nanowires are obtained.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 1, 'T', 2],[22.0, 3.6, 'mWK', 0],[39.0, 2.0, 'mWK', 0]

P
###Thermoelectric power factor enhancement by spin-polarized currents - a nanowire case study|Anna Corinna Niemann,Tim Böhnert,Ann-Kathrin Michel,Svenja Bäßler,Bernd Gotsmann,Katalin Neuróhr,Bence Tóth,László Péter,Imre Bakonyi,Victor Vega,Victor M. Prida,Johannes Gooth,Kornelius Nielsch###
(1524937, 1524937)
 At room temperature, measured values of TE PFs up to 3.6 mWK-2m<missing VAR>-1for AMR samples and 2.0 mWK-2m<missing VAR>-1 for GMR nanowires are obtained.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 1, 'T', 2],[6.0, 3.6, 'mWK', 0],[23.0, 2.0, 'mWK', 0]

PF
###Thermoelectric power factor enhancement by spin-polarized currents - a nanowire case study|Anna Corinna Niemann,Tim Böhnert,Ann-Kathrin Michel,Svenja Bäßler,Bernd Gotsmann,Katalin Neuróhr,Bence Tóth,László Péter,Imre Bakonyi,Victor Vega,Victor M. Prida,Johannes Gooth,Kornelius Nielsch###
(1524989, 1524990)
 Furthermore,the TE PF is found to increase by up to 13.1 % for AMR Co-Ni alloy nanowiresand by up to 52 % for GMR Co-Ni/Cu samples in an external applied magneticfield.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[219.0, 1, 'T', 3],[46.0, 3.6, 'mWK', 1],[29.0, 2.0, 'mWK', 1]

Co
###Thermoelectric power factor enhancement by spin-polarized currents - a nanowire case study|Anna Corinna Niemann,Tim Böhnert,Ann-Kathrin Michel,Svenja Bäßler,Bernd Gotsmann,Katalin Neuróhr,Bence Tóth,László Péter,Imre Bakonyi,Victor Vega,Victor M. Prida,Johannes Gooth,Kornelius Nielsch###
(1525016, 1525016)
 Furthermore,the TE PF is found to increase by up to 13.1 % for AMR Co-Ni alloy nanowiresand by up to 52 % for GMR Co-Ni/Cu samples in an external applied magneticfield.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[246.0, 1, 'T', 3],[73.0, 3.6, 'mWK', 1],[56.0, 2.0, 'mWK', 1]

Ni
###Thermoelectric power factor enhancement by spin-polarized currents - a nanowire case study|Anna Corinna Niemann,Tim Böhnert,Ann-Kathrin Michel,Svenja Bäßler,Bernd Gotsmann,Katalin Neuróhr,Bence Tóth,László Péter,Imre Bakonyi,Victor Vega,Victor M. Prida,Johannes Gooth,Kornelius Nielsch###
(1525018, 1525018)
 Furthermore,the TE PF is found to increase by up to 13.1 % for AMR Co-Ni alloy nanowiresand by up to 52 % for GMR Co-Ni/Cu samples in an external applied magneticfield.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[248.0, 1, 'T', 3],[75.0, 3.6, 'mWK', 1],[58.0, 2.0, 'mWK', 1]

Co
###Thermoelectric power factor enhancement by spin-polarized currents - a nanowire case study|Anna Corinna Niemann,Tim Böhnert,Ann-Kathrin Michel,Svenja Bäßler,Bernd Gotsmann,Katalin Neuróhr,Bence Tóth,László Péter,Imre Bakonyi,Victor Vega,Victor M. Prida,Johannes Gooth,Kornelius Nielsch###
(1525043, 1525043)
 Furthermore,the TE PF is found to increase by up to 13.1 % for AMR Co-Ni alloy nanowiresand by up to 52 % for GMR Co-Ni/Cu samples in an external applied magneticfield.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[273.0, 1, 'T', 3],[100.0, 3.6, 'mWK', 1],[83.0, 2.0, 'mWK', 1]

Ni/Cu
###Thermoelectric power factor enhancement by spin-polarized currents - a nanowire case study|Anna Corinna Niemann,Tim Böhnert,Ann-Kathrin Michel,Svenja Bäßler,Bernd Gotsmann,Katalin Neuróhr,Bence Tóth,László Péter,Imre Bakonyi,Victor Vega,Victor M. Prida,Johannes Gooth,Kornelius Nielsch###
(1525045, 1525047)
 Furthermore,the TE PF is found to increase by up to 13.1 % for AMR Co-Ni alloy nanowiresand by up to 52 % for GMR Co-Ni/Cu samples in an external applied magneticfield.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[275.0, 1, 'T', 3],[102.0, 3.6, 'mWK', 1],[85.0, 2.0, 'mWK', 1]

P
###Thermoelectric power factor enhancement by spin-polarized currents - a nanowire case study|Anna Corinna Niemann,Tim Böhnert,Ann-Kathrin Michel,Svenja Bäßler,Bernd Gotsmann,Katalin Neuróhr,Bence Tóth,László Péter,Imre Bakonyi,Victor Vega,Victor M. Prida,Johannes Gooth,Kornelius Nielsch###
(1525076, 1525076)
 The magnetic nanowires exhibit TE PFs that are of the same order ofmagnitude as TE PFs of Bi-Sb-Se-Te based thermoelectric materials and,additionally, give the opportunity to adjust the TE power output to changingloads and hotspots through external magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[306.0, 1, 'T', 4],[133.0, 3.6, 'mWK', 2],[116.0, 2.0, 'mWK', 2]

P
###Thermoelectric power factor enhancement by spin-polarized currents - a nanowire case study|Anna Corinna Niemann,Tim Böhnert,Ann-Kathrin Michel,Svenja Bäßler,Bernd Gotsmann,Katalin Neuróhr,Bence Tóth,László Péter,Imre Bakonyi,Victor Vega,Victor M. Prida,Johannes Gooth,Kornelius Nielsch###
(1525101, 1525101)
 The magnetic nanowires exhibit TE PFs that are of the same order ofmagnitude as TE PFs of Bi-Sb-Se-Te based thermoelectric materials and,additionally, give the opportunity to adjust the TE power output to changingloads and hotspots through external magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[331.0, 1, 'T', 4],[158.0, 3.6, 'mWK', 2],[141.0, 2.0, 'mWK', 2]

Bi
###Thermoelectric power factor enhancement by spin-polarized currents - a nanowire case study|Anna Corinna Niemann,Tim Böhnert,Ann-Kathrin Michel,Svenja Bäßler,Bernd Gotsmann,Katalin Neuróhr,Bence Tóth,László Péter,Imre Bakonyi,Victor Vega,Victor M. Prida,Johannes Gooth,Kornelius Nielsch###
(1525106, 1525106)
 The magnetic nanowires exhibit TE PFs that are of the same order ofmagnitude as TE PFs of Bi-Sb-Se-Te based thermoelectric materials and,additionally, give the opportunity to adjust the TE power output to changingloads and hotspots through external magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[336.0, 1, 'T', 4],[163.0, 3.6, 'mWK', 2],[146.0, 2.0, 'mWK', 2]

Sb
###Thermoelectric power factor enhancement by spin-polarized currents - a nanowire case study|Anna Corinna Niemann,Tim Böhnert,Ann-Kathrin Michel,Svenja Bäßler,Bernd Gotsmann,Katalin Neuróhr,Bence Tóth,László Péter,Imre Bakonyi,Victor Vega,Victor M. Prida,Johannes Gooth,Kornelius Nielsch###
(1525108, 1525108)
 The magnetic nanowires exhibit TE PFs that are of the same order ofmagnitude as TE PFs of Bi-Sb-Se-Te based thermoelectric materials and,additionally, give the opportunity to adjust the TE power output to changingloads and hotspots through external magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[338.0, 1, 'T', 4],[165.0, 3.6, 'mWK', 2],[148.0, 2.0, 'mWK', 2]

Se
###Thermoelectric power factor enhancement by spin-polarized currents - a nanowire case study|Anna Corinna Niemann,Tim Böhnert,Ann-Kathrin Michel,Svenja Bäßler,Bernd Gotsmann,Katalin Neuróhr,Bence Tóth,László Péter,Imre Bakonyi,Victor Vega,Victor M. Prida,Johannes Gooth,Kornelius Nielsch###
(1525110, 1525110)
 The magnetic nanowires exhibit TE PFs that are of the same order ofmagnitude as TE PFs of Bi-Sb-Se-Te based thermoelectric materials and,additionally, give the opportunity to adjust the TE power output to changingloads and hotspots through external magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[340.0, 1, 'T', 4],[167.0, 3.6, 'mWK', 2],[150.0, 2.0, 'mWK', 2]

Te
###Thermoelectric power factor enhancement by spin-polarized currents - a nanowire case study|Anna Corinna Niemann,Tim Böhnert,Ann-Kathrin Michel,Svenja Bäßler,Bernd Gotsmann,Katalin Neuróhr,Bence Tóth,László Péter,Imre Bakonyi,Victor Vega,Victor M. Prida,Johannes Gooth,Kornelius Nielsch###
(1525112, 1525112)
 The magnetic nanowires exhibit TE PFs that are of the same order ofmagnitude as TE PFs of Bi-Sb-Se-Te based thermoelectric materials and,additionally, give the opportunity to adjust the TE power output to changingloads and hotspots through external magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[342.0, 1, 'T', 4],[169.0, 3.6, 'mWK', 2],[152.0, 2.0, 'mWK', 2]

N
###A quantitative description of Nernst effect in high-temperature superconductors|Rong Li,Zhen-Su She###
(1525223, 1525223)
 A quantitative vortex-fluid model for flux-flow resistivity rho and Nernstsignal e<missing VAR>N in high-temperature superconductors (HT<missing VAR>SC) is proposed.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###A quantitative description of Nernst effect in high-temperature superconductors|Rong Li,Zhen-Su She###
(1525234, 1525234)
 A quantitative vortex-fluid model for flux-flow resistivity rho and Nernstsignal e<missing VAR>N in high-temperature superconductors (HT<missing VAR>SC) is proposed.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###A quantitative description of Nernst effect in high-temperature superconductors|Rong Li,Zhen-Su She###
(1525237, 1525237)
 A quantitative vortex-fluid model for flux-flow resistivity rho and Nernstsignal e<missing VAR>N in high-temperature superconductors (HT<missing VAR>SC) is proposed.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###A quantitative description of Nernst effect in high-temperature superconductors|Rong Li,Zhen-Su She###
(1525398, 1525398)
 Remarkably accuratedescriptions for both Nernst signal of six samples and flux flow resistivityare achieved over a wide range of temperature T<missing VAR> and magnetic field B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###A quantitative description of Nernst effect in high-temperature superconductors|Rong Li,Zhen-Su She###
(1525594, 1525594)
 Application of the model andsystematic measurement of relevant physical quantities from Nernst signal inother HT<missing VAR>SC samples are discussed.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SC
###A quantitative description of Nernst effect in high-temperature superconductors|Rong Li,Zhen-Su She###
(1525596, 1525597)
 Application of the model andsystematic measurement of relevant physical quantities from Nernst signal inother HT<missing VAR>SC samples are discussed.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Superconductivity and Dirac Fermions in 112-phase Pnictides|S. J. Ray,L. Alff###
(1525714, 1525714)
 The 112-phase has gained augmented attention due to the recentdiscovery of high-temperature superconductivity in cl with a maximumcritical temperature tcsim 47,K upon Sb substitution.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 47, ',', 0]

Sb
###Superconductivity and Dirac Fermions in 112-phase Pnictides|S. J. Ray,L. Alff###
(1525718, 1525718)
 The 112-phase has gained augmented attention due to the recentdiscovery of high-temperature superconductivity in cl with a maximumcritical temperature tcsim 47,K upon Sb substitution.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 47, ',', 0]

Ni
###Superconductivity and Dirac Fermions in 112-phase Pnictides|S. J. Ray,L. Alff###
(1525838, 1525838)
 Low-temperature superconductivity which coexists withantiferromagnetic order was observed in transition metal (Ni, Pd) deficient112-compounds like cn, lpb, lps, lns.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 47, ',', 2]

Pd
###Superconductivity and Dirac Fermions in 112-phase Pnictides|S. J. Ray,L. Alff###
(1525841, 1525841)
 Low-temperature superconductivity which coexists withantiferromagnetic order was observed in transition metal (Ni, Pd) deficient112-compounds like cn, lpb, lps, lns.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 47, ',', 2]

In
###Superconductivity and Dirac Fermions in 112-phase Pnictides|S. J. Ray,L. Alff###
(1525941, 1525941)
In these compounds, the linear energy dispersion resulted in a highmagnetoresistance that stayed unsaturated even at the highest applied magneticfields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[229.0, 47, ',', 4]

In
###Carrier driven coupling in ferromagnetic oxide heterostructures|Ching-Hao Chang,Sujit Das,Sanjeev Kumar,R. Ganesh###
(1526136, 1526136)
 In this letter, we propose a new mechanism for the couplingbetween layers of itinerant ferromagnetic materials in heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Carrier driven coupling in ferromagnetic oxide heterostructures|Ching-Hao Chang,Sujit Das,Sanjeev Kumar,R. Ganesh###
(1526218, 1526218)
 In doing so, they force aferromagnetic or antiferromagnetic coupling between the constituent layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrRuO3
###Carrier driven coupling in ferromagnetic oxide heterostructures|Ching-Hao Chang,Sujit Das,Sanjeev Kumar,R. Ganesh###
(1526269, 1526272)
 Toillustrate this, we focus on heterostructures composed of SrRuO3 andLa1-xAx<missing VAR>MnO3 (ACa/Sr).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La1-x
###Carrier driven coupling in ferromagnetic oxide heterostructures|Ching-Hao Chang,Sujit Das,Sanjeev Kumar,R. Ganesh###
(1526277, 1526280)
 Toillustrate this, we focus on heterostructures composed of SrRuO3 andLa1-xAx<missing VAR>MnO3 (ACa/Sr).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

MnO3
###Carrier driven coupling in ferromagnetic oxide heterostructures|Ching-Hao Chang,Sujit Das,Sanjeev Kumar,R. Ganesh###
(1526283, 1526285)
 Toillustrate this, we focus on heterostructures composed of SrRuO3 andLa1-xAx<missing VAR>MnO3 (ACa/Sr).
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr
###Carrier driven coupling in ferromagnetic oxide heterostructures|Ching-Hao Chang,Sujit Das,Sanjeev Kumar,R. Ganesh###
(1526291, 1526291)
 Toillustrate this, we focus on heterostructures composed of SrRuO3 andLa1-xAx<missing VAR>MnO3 (ACa/Sr).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrRuO3
###Carrier driven coupling in ferromagnetic oxide heterostructures|Ching-Hao Chang,Sujit Das,Sanjeev Kumar,R. Ganesh###
(1526327, 1526330)
 Our mechanism is consistent withantiferromagnetic alignment that is known to occur in multilayers ofSrRuO3-La1-xAx<missing VAR>MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La1-x
###Carrier driven coupling in ferromagnetic oxide heterostructures|Ching-Hao Chang,Sujit Das,Sanjeev Kumar,R. Ganesh###
(1526332, 1526335)
 Our mechanism is consistent withantiferromagnetic alignment that is known to occur in multilayers ofSrRuO3-La1-xAx<missing VAR>MnO3.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

MnO3
###Carrier driven coupling in ferromagnetic oxide heterostructures|Ching-Hao Chang,Sujit Das,Sanjeev Kumar,R. Ganesh###
(1526338, 1526340)
 Our mechanism is consistent withantiferromagnetic alignment that is known to occur in multilayers ofSrRuO3-La1-xAx<missing VAR>MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Carrier driven coupling in ferromagnetic oxide heterostructures|Ching-Hao Chang,Sujit Das,Sanjeev Kumar,R. Ganesh###
(1526387, 1526387)
 In addition, we discuss a quantum well model forheterostructures and argue that the spin-dependent density of states determinesthe nature of the coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Carrier driven coupling in ferromagnetic oxide heterostructures|Ching-Hao Chang,Sujit Das,Sanjeev Kumar,R. Ganesh###
(1526441, 1526441)
 As a smoking gun signature, we propose thatbilayers with the same constituents will oscillate between ferromagnetic andantiferromagnetic coupling upon tuning the relative thicknesses of the layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Three-dimensionality of the bulk electronic structure in WTe2|Yun Wu,Na Hyun Jo,Daixiang Mou,Lunan Huang,S. L. Bud'ko,P. C. Canfield,Adam Kaminski###
(1527022, 1527024)
Three-dimensionality of the bulk electronic structure in WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[238.0, 6.36, 'eV', 3],[313.0, 3, 'D', 4]

H
###Three-dimensionality of the bulk electronic structure in WTe2|Yun Wu,Na Hyun Jo,Daixiang Mou,Lunan Huang,S. L. Bud'ko,P. C. Canfield,Adam Kaminski###
(1527055, 1527055)
 We use temperature- and field-dependent resistivity measurements[Shubnikov--de Haas (SdH) quantum oscillations] and ultrahigh resolution,tunable, vacuum ultraviolet (VUV) laser-based angle-resolved photoemissionspectroscopy (ARPES) to study the three-dimensionality (3D) of the bulkelectronic structure in WTe2, a type-II Weyl semimetal.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[207.0, 6.36, 'eV', 2],[282.0, 3, 'D', 3]

(VUV)
###Three-dimensionality of the bulk electronic structure in WTe2|Yun Wu,Na Hyun Jo,Daixiang Mou,Lunan Huang,S. L. Bud'ko,P. C. Canfield,Adam Kaminski###
(1527078, 1527082)
 We use temperature- and field-dependent resistivity measurements[Shubnikov--de Haas (SdH) quantum oscillations] and ultrahigh resolution,tunable, vacuum ultraviolet (VUV) laser-based angle-resolved photoemissionspectroscopy (ARPES) to study the three-dimensionality (3D) of the bulkelectronic structure in WTe2, a type-II Weyl semimetal.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[180.0, 6.36, 'eV', 2],[255.0, 3, 'D', 3]

S
###Three-dimensionality of the bulk electronic structure in WTe2|Yun Wu,Na Hyun Jo,Daixiang Mou,Lunan Huang,S. L. Bud'ko,P. C. Canfield,Adam Kaminski###
(1527102, 1527102)
 We use temperature- and field-dependent resistivity measurements[Shubnikov--de Haas (SdH) quantum oscillations] and ultrahigh resolution,tunable, vacuum ultraviolet (VUV) laser-based angle-resolved photoemissionspectroscopy (ARPES) to study the three-dimensionality (3D) of the bulkelectronic structure in WTe2, a type-II Weyl semimetal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 6.36, 'eV', 2],[235.0, 3, 'D', 3]

WTe2
###Three-dimensionality of the bulk electronic structure in WTe2|Yun Wu,Na Hyun Jo,Daixiang Mou,Lunan Huang,S. L. Bud'ko,P. C. Canfield,Adam Kaminski###
(1527133, 1527135)
 We use temperature- and field-dependent resistivity measurements[Shubnikov--de Haas (SdH) quantum oscillations] and ultrahigh resolution,tunable, vacuum ultraviolet (VUV) laser-based angle-resolved photoemissionspectroscopy (ARPES) to study the three-dimensionality (3D) of the bulkelectronic structure in WTe2, a type-II Weyl semimetal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 6.36, 'eV', 2],[202.0, 3, 'D', 3]

II
###Three-dimensionality of the bulk electronic structure in WTe2|Yun Wu,Na Hyun Jo,Daixiang Mou,Lunan Huang,S. L. Bud'ko,P. C. Canfield,Adam Kaminski###
(1527142, 1527143)
 We use temperature- and field-dependent resistivity measurements[Shubnikov--de Haas (SdH) quantum oscillations] and ultrahigh resolution,tunable, vacuum ultraviolet (VUV) laser-based angle-resolved photoemissionspectroscopy (ARPES) to study the three-dimensionality (3D) of the bulkelectronic structure in WTe2, a type-II Weyl semimetal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 6.36, 'eV', 2],[194.0, 3, 'D', 3]

(FS)
###Three-dimensionality of the bulk electronic structure in WTe2|Yun Wu,Na Hyun Jo,Daixiang Mou,Lunan Huang,S. L. Bud'ko,P. C. Canfield,Adam Kaminski###
(1527159, 1527162)
 The bulk Fermi surface(FS) consists of two pairs of electron pockets and two pairs of hole pocketsalong the X<missing VAR>-Gamma-X<missing VAR> direction as detected by using an incident photon energy of6.7 e<missing VAR>V, which is consistent with the previously reported data.
Featurization successful!
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 6.36, 'eV', 1],[175.0, 3, 'D', 2]

V
###Three-dimensionality of the bulk electronic structure in WTe2|Yun Wu,Na Hyun Jo,Daixiang Mou,Lunan Huang,S. L. Bud'ko,P. C. Canfield,Adam Kaminski###
(1527225, 1527225)
 The bulk Fermi surface(FS) consists of two pairs of electron pockets and two pairs of hole pocketsalong the X<missing VAR>-Gamma-X<missing VAR> direction as detected by using an incident photon energy of6.7 e<missing VAR>V, which is consistent with the previously reported data.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 6.36, 'eV', 1],[112.0, 3, 'D', 2]

FS
###Three-dimensionality of the bulk electronic structure in WTe2|Yun Wu,Na Hyun Jo,Daixiang Mou,Lunan Huang,S. L. Bud'ko,P. C. Canfield,Adam Kaminski###
(1527339, 1527340)
 Therefore, the bulk, 3D FS consists of three pairs ofelectron pockets and two pairs of hole pockets in total.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 6.36, 'eV', 1],[2.0, 3, 'D', 0]

WTe2
###Three-dimensionality of the bulk electronic structure in WTe2|Yun Wu,Na Hyun Jo,Daixiang Mou,Lunan Huang,S. L. Bud'ko,P. C. Canfield,Adam Kaminski###
(1527421, 1527423)
 With the ability offine tuning the incident photon energy, we demonstrate the strongthree-dimensionality of the bulk electronic structure in WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[159.0, 6.36, 'eV', 2],[84.0, 3, 'D', 1]

S
###Three-dimensionality of the bulk electronic structure in WTe2|Yun Wu,Na Hyun Jo,Daixiang Mou,Lunan Huang,S. L. Bud'ko,P. C. Canfield,Adam Kaminski###
(1527441, 1527441)
 The combinationof resistivity and ARPES measurements reveal the complete, and consistent,picture of the bulk electronic structure of this material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 6.36, 'eV', 3],[104.0, 3, 'D', 2]

Ni80Fe20/MgO
###Spin mediated magneto-electro-thermal transport behavior in Ni80Fe20/MgO/p-Si thin films|P. C. Lou,W. P. Beyermann,S. Kumar###
(1527501, 1527507)
Spin mediated magneto-electro-thermal transport behavior in Ni80Fe20/MgO/p<missing VAR>-Si thin films.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Si
###Spin mediated magneto-electro-thermal transport behavior in Ni80Fe20/MgO/p-Si thin films|P. C. Lou,W. P. Beyermann,S. Kumar###
(1527511, 1527511)
Spin mediated magneto-electro-thermal transport behavior in Ni80Fe20/MgO/p<missing VAR>-Si thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin mediated magneto-electro-thermal transport behavior in Ni80Fe20/MgO/p-Si thin films|P. C. Lou,W. P. Beyermann,S. Kumar###
(1527518, 1527518)
 In Si, spin-phonon interaction is the primary spin relaxation mechanism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Spin mediated magneto-electro-thermal transport behavior in Ni80Fe20/MgO/p-Si thin films|P. C. Lou,W. P. Beyermann,S. Kumar###
(1527520, 1527520)
 In Si, spin-phonon interaction is the primary spin relaxation mechanism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Spin mediated magneto-electro-thermal transport behavior in Ni80Fe20/MgO/p-Si thin films|P. C. Lou,W. P. Beyermann,S. Kumar###
(1527542, 1527542)
 Atlow temperatures, the absence of spin-phonon relaxation will lead to enhancedspin accumulation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pd
###Spin mediated magneto-electro-thermal transport behavior in Ni80Fe20/MgO/p-Si thin films|P. C. Lou,W. P. Beyermann,S. Kumar###
(1527663, 1527663)
 Here we present the first experimentalproof of spin accumulation induced electro-thermal transport behavior in a Pd(1 nm)/Ni80Fe20 (25 nm)/MgO (1 nm)/p<missing VAR>-Si (2 um) specimen.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni80Fe20
###Spin mediated magneto-electro-thermal transport behavior in Ni80Fe20/MgO/p-Si thin films|P. C. Lou,W. P. Beyermann,S. Kumar###
(1527672, 1527675)
 Here we present the first experimentalproof of spin accumulation induced electro-thermal transport behavior in a Pd(1 nm)/Ni80Fe20 (25 nm)/MgO (1 nm)/p<missing VAR>-Si (2 um) specimen.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Spin mediated magneto-electro-thermal transport behavior in Ni80Fe20/MgO/p-Si thin films|P. C. Lou,W. P. Beyermann,S. Kumar###
(1527683, 1527684)
 Here we present the first experimentalproof of spin accumulation induced electro-thermal transport behavior in a Pd(1 nm)/Ni80Fe20 (25 nm)/MgO (1 nm)/p<missing VAR>-Si (2 um) specimen.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Spin mediated magneto-electro-thermal transport behavior in Ni80Fe20/MgO/p-Si thin films|P. C. Lou,W. P. Beyermann,S. Kumar###
(1527694, 1527694)
 Here we present the first experimentalproof of spin accumulation induced electro-thermal transport behavior in a Pd(1 nm)/Ni80Fe20 (25 nm)/MgO (1 nm)/p<missing VAR>-Si (2 um) specimen.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Spin mediated magneto-electro-thermal transport behavior in Ni80Fe20/MgO/p-Si thin films|P. C. Lou,W. P. Beyermann,S. Kumar###
(1527746, 1527746)
 The spin accumulation changes thephononic thermal transport in p<missing VAR>-Si causing the observed magneto-electro-thermaltransport behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Spin mediated magneto-electro-thermal transport behavior in Ni80Fe20/MgO/p-Si thin films|P. C. Lou,W. P. Beyermann,S. Kumar###
(1527825, 1527825)
 We also observe the inverted switching behavior inmagnetoresistance measurement at low temperatures in contrast to magneticcharacterization, which is attributed to the canted spin states in p<missing VAR>-Si due tospin accumulation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La1
###Unconventional slowing down of electronic recovery in photoexcited charge-ordered La$_{1/3}$Sr$_{2/3}$FeO$_3$|Yi Zhu,Jason Hoffman,Clare E. Rowland,Hyowon Park,Donald A. Walko,John W. Freeland,Philip J. Ryan,Richard D. Schaller,Anand Bhattacharya,Haidan Wen###
(1527956, 1527957)
Unconventional slowing down of electronic recovery in photoexcited charge-ordered La1/3Sr2/3FeO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr2
###Unconventional slowing down of electronic recovery in photoexcited charge-ordered La$_{1/3}$Sr$_{2/3}$FeO$_3$|Yi Zhu,Jason Hoffman,Clare E. Rowland,Hyowon Park,Donald A. Walko,John W. Freeland,Philip J. Ryan,Richard D. Schaller,Anand Bhattacharya,Haidan Wen###
(1527960, 1527961)
Unconventional slowing down of electronic recovery in photoexcited charge-ordered La1/3Sr2/3FeO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeO3
###Unconventional slowing down of electronic recovery in photoexcited charge-ordered La$_{1/3}$Sr$_{2/3}$FeO$_3$|Yi Zhu,Jason Hoffman,Clare E. Rowland,Hyowon Park,Donald A. Walko,John W. Freeland,Philip J. Ryan,Richard D. Schaller,Anand Bhattacharya,Haidan Wen###
(1527964, 1527966)
Unconventional slowing down of electronic recovery in photoexcited charge-ordered La1/3Sr2/3FeO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###Unconventional slowing down of electronic recovery in photoexcited charge-ordered La$_{1/3}$Sr$_{2/3}$FeO$_3$|Yi Zhu,Jason Hoffman,Clare E. Rowland,Hyowon Park,Donald A. Walko,John W. Freeland,Philip J. Ryan,Richard D. Schaller,Anand Bhattacharya,Haidan Wen###
(1527994, 1527994)
 Ordered electronic phases are intimately related to emerging phenomena suchas high Tc superconductivity and colossal magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La1
###Unconventional slowing down of electronic recovery in photoexcited charge-ordered La$_{1/3}$Sr$_{2/3}$FeO$_3$|Yi Zhu,Jason Hoffman,Clare E. Rowland,Hyowon Park,Donald A. Walko,John W. Freeland,Philip J. Ryan,Richard D. Schaller,Anand Bhattacharya,Haidan Wen###
(1528223, 1528224)
 Following optical excitation,the recovery time of both transient optical reflectivity and x<missing VAR>-ray diffractionintensity from a charge-ordered superstructure in a La1/3Sr2/3FeO3thin film increases by orders of magnitude longer than the independentlymeasured lattice cooling time when the sample temperature approaches the phasetransition temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr2
###Unconventional slowing down of electronic recovery in photoexcited charge-ordered La$_{1/3}$Sr$_{2/3}$FeO$_3$|Yi Zhu,Jason Hoffman,Clare E. Rowland,Hyowon Park,Donald A. Walko,John W. Freeland,Philip J. Ryan,Richard D. Schaller,Anand Bhattacharya,Haidan Wen###
(1528227, 1528228)
 Following optical excitation,the recovery time of both transient optical reflectivity and x<missing VAR>-ray diffractionintensity from a charge-ordered superstructure in a La1/3Sr2/3FeO3thin film increases by orders of magnitude longer than the independentlymeasured lattice cooling time when the sample temperature approaches the phasetransition temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeO3
###Unconventional slowing down of electronic recovery in photoexcited charge-ordered La$_{1/3}$Sr$_{2/3}$FeO$_3$|Yi Zhu,Jason Hoffman,Clare E. Rowland,Hyowon Park,Donald A. Walko,John W. Freeland,Philip J. Ryan,Richard D. Schaller,Anand Bhattacharya,Haidan Wen###
(1528231, 1528233)
 Following optical excitation,the recovery time of both transient optical reflectivity and x<missing VAR>-ray diffractionintensity from a charge-ordered superstructure in a La1/3Sr2/3FeO3thin film increases by orders of magnitude longer than the independentlymeasured lattice cooling time when the sample temperature approaches the phasetransition temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoTe2
###MoTe2 : An uncompensated semimetal with extremely large magnetoresistance|S. Thirupathaiah,Rajveer Jha,Banabir Pal,J. S. Matias,P. Kumar Das,P. K. Sivakumar,I. Vobornik,N. C. Plumb,M. Shi,R. A. Ribeiro,D. D. Sarma###
(1528410, 1528412)
MoTe2  An uncompensated semimetal with extremely large magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###MoTe2 : An uncompensated semimetal with extremely large magnetoresistance|S. Thirupathaiah,Rajveer Jha,Banabir Pal,J. S. Matias,P. Kumar Das,P. K. Sivakumar,I. Vobornik,N. C. Plumb,M. Shi,R. A. Ribeiro,D. D. Sarma###
(1528437, 1528439)
 Transition-metal dichalcogenides (WTe2 and MoTe2) have drawn muchattention, recently, because of the nonsaturating extremely largemagnetoresistance (XMR) observed in these compounds in addition to thepredictions of likely type-II Weyl semimetals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Te2
###MoTe2 : An uncompensated semimetal with extremely large magnetoresistance|S. Thirupathaiah,Rajveer Jha,Banabir Pal,J. S. Matias,P. Kumar Das,P. K. Sivakumar,I. Vobornik,N. C. Plumb,M. Shi,R. A. Ribeiro,D. D. Sarma###
(1528444, 1528445)
 Transition-metal dichalcogenides (WTe2 and MoTe2) have drawn muchattention, recently, because of the nonsaturating extremely largemagnetoresistance (XMR) observed in these compounds in addition to thepredictions of likely type-II Weyl semimetals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###MoTe2 : An uncompensated semimetal with extremely large magnetoresistance|S. Thirupathaiah,Rajveer Jha,Banabir Pal,J. S. Matias,P. Kumar Das,P. K. Sivakumar,I. Vobornik,N. C. Plumb,M. Shi,R. A. Ribeiro,D. D. Sarma###
(1528507, 1528508)
 Transition-metal dichalcogenides (WTe2 and MoTe2) have drawn muchattention, recently, because of the nonsaturating extremely largemagnetoresistance (XMR) observed in these compounds in addition to thepredictions of likely type-II Weyl semimetals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###MoTe2 : An uncompensated semimetal with extremely large magnetoresistance|S. Thirupathaiah,Rajveer Jha,Banabir Pal,J. S. Matias,P. Kumar Das,P. K. Sivakumar,I. Vobornik,N. C. Plumb,M. Shi,R. A. Ribeiro,D. D. Sarma###
(1528554, 1528556)
 Contrary to the topologicalinsulators or Dirac semimetals where XMR is linearly dependent on the field, inWTe2 and MoTe2 the XMR is nonlinearly dependent on the field, suggestingan entirely different mechanism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoTe2
###MoTe2 : An uncompensated semimetal with extremely large magnetoresistance|S. Thirupathaiah,Rajveer Jha,Banabir Pal,J. S. Matias,P. Kumar Das,P. K. Sivakumar,I. Vobornik,N. C. Plumb,M. Shi,R. A. Ribeiro,D. D. Sarma###
(1528560, 1528562)
 Contrary to the topologicalinsulators or Dirac semimetals where XMR is linearly dependent on the field, inWTe2 and MoTe2 the XMR is nonlinearly dependent on the field, suggestingan entirely different mechanism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###MoTe2 : An uncompensated semimetal with extremely large magnetoresistance|S. Thirupathaiah,Rajveer Jha,Banabir Pal,J. S. Matias,P. Kumar Das,P. K. Sivakumar,I. Vobornik,N. C. Plumb,M. Shi,R. A. Ribeiro,D. D. Sarma###
(1528626, 1528628)
 Electron-hole compensation has been proposedas a mechanism of this nonsaturating XMR in WTe2, while it is yet to beclear in the case of MoTe2 which has an identical crystal structure ofWTe2 at low temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoTe2
###MoTe2 : An uncompensated semimetal with extremely large magnetoresistance|S. Thirupathaiah,Rajveer Jha,Banabir Pal,J. S. Matias,P. Kumar Das,P. K. Sivakumar,I. Vobornik,N. C. Plumb,M. Shi,R. A. Ribeiro,D. D. Sarma###
(1528654, 1528656)
 Electron-hole compensation has been proposedas a mechanism of this nonsaturating XMR in WTe2, while it is yet to beclear in the case of MoTe2 which has an identical crystal structure ofWTe2 at low temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###MoTe2 : An uncompensated semimetal with extremely large magnetoresistance|S. Thirupathaiah,Rajveer Jha,Banabir Pal,J. S. Matias,P. Kumar Das,P. K. Sivakumar,I. Vobornik,N. C. Plumb,M. Shi,R. A. Ribeiro,D. D. Sarma###
(1528673, 1528675)
 Electron-hole compensation has been proposedas a mechanism of this nonsaturating XMR in WTe2, while it is yet to beclear in the case of MoTe2 which has an identical crystal structure ofWTe2 at low temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###MoTe2 : An uncompensated semimetal with extremely large magnetoresistance|S. Thirupathaiah,Rajveer Jha,Banabir Pal,J. S. Matias,P. Kumar Das,P. K. Sivakumar,I. Vobornik,N. C. Plumb,M. Shi,R. A. Ribeiro,D. D. Sarma###
(1528684, 1528684)
 In this paper, we report low-energy electronicstructure and Fermi surface topology of MoTe2 using angle-resolvedphotoemission spectrometry (ARPES) technique and first-principle calculations,and compare them with that of WTe2 to understand the mechanism of XMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoTe2
###MoTe2 : An uncompensated semimetal with extremely large magnetoresistance|S. Thirupathaiah,Rajveer Jha,Banabir Pal,J. S. Matias,P. Kumar Das,P. K. Sivakumar,I. Vobornik,N. C. Plumb,M. Shi,R. A. Ribeiro,D. D. Sarma###
(1528714, 1528716)
 In this paper, we report low-energy electronicstructure and Fermi surface topology of MoTe2 using angle-resolvedphotoemission spectrometry (ARPES) technique and first-principle calculations,and compare them with that of WTe2 to understand the mechanism of XMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###MoTe2 : An uncompensated semimetal with extremely large magnetoresistance|S. Thirupathaiah,Rajveer Jha,Banabir Pal,J. S. Matias,P. Kumar Das,P. K. Sivakumar,I. Vobornik,N. C. Plumb,M. Shi,R. A. Ribeiro,D. D. Sarma###
(1528734, 1528734)
 In this paper, we report low-energy electronicstructure and Fermi surface topology of MoTe2 using angle-resolvedphotoemission spectrometry (ARPES) technique and first-principle calculations,and compare them with that of WTe2 to understand the mechanism of XMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###MoTe2 : An uncompensated semimetal with extremely large magnetoresistance|S. Thirupathaiah,Rajveer Jha,Banabir Pal,J. S. Matias,P. Kumar Das,P. K. Sivakumar,I. Vobornik,N. C. Plumb,M. Shi,R. A. Ribeiro,D. D. Sarma###
(1528761, 1528763)
 In this paper, we report low-energy electronicstructure and Fermi surface topology of MoTe2 using angle-resolvedphotoemission spectrometry (ARPES) technique and first-principle calculations,and compare them with that of WTe2 to understand the mechanism of XMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoTe2
###MoTe2 : An uncompensated semimetal with extremely large magnetoresistance|S. Thirupathaiah,Rajveer Jha,Banabir Pal,J. S. Matias,P. Kumar Das,P. K. Sivakumar,I. Vobornik,N. C. Plumb,M. Shi,R. A. Ribeiro,D. D. Sarma###
(1528789, 1528791)
 Ourmeasurements demonstrate that MoTe2 is an uncompensated semimetal, contraryto WTe2 in which compensated electron-hole pockets have been identified,ruling out the applicability of charge compensation theory for thenonsaturating XMR in MoTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###MoTe2 : An uncompensated semimetal with extremely large magnetoresistance|S. Thirupathaiah,Rajveer Jha,Banabir Pal,J. S. Matias,P. Kumar Das,P. K. Sivakumar,I. Vobornik,N. C. Plumb,M. Shi,R. A. Ribeiro,D. D. Sarma###
(1528807, 1528809)
 Ourmeasurements demonstrate that MoTe2 is an uncompensated semimetal, contraryto WTe2 in which compensated electron-hole pockets have been identified,ruling out the applicability of charge compensation theory for thenonsaturating XMR in MoTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoTe2
###MoTe2 : An uncompensated semimetal with extremely large magnetoresistance|S. Thirupathaiah,Rajveer Jha,Banabir Pal,J. S. Matias,P. Kumar Das,P. K. Sivakumar,I. Vobornik,N. C. Plumb,M. Shi,R. A. Ribeiro,D. D. Sarma###
(1528860, 1528862)
 Ourmeasurements demonstrate that MoTe2 is an uncompensated semimetal, contraryto WTe2 in which compensated electron-hole pockets have been identified,ruling out the applicability of charge compensation theory for thenonsaturating XMR in MoTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###MoTe2 : An uncompensated semimetal with extremely large magnetoresistance|S. Thirupathaiah,Rajveer Jha,Banabir Pal,J. S. Matias,P. Kumar Das,P. K. Sivakumar,I. Vobornik,N. C. Plumb,M. Shi,R. A. Ribeiro,D. D. Sarma###
(1528865, 1528865)
 In this context, we also discuss theapplicability of the existing other conjectures on the XMR of these compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La5Mo4O16
###Time-of-flight elastic and inelastic neutron scattering studies on the localized $4d$ electron layered perovskite La$_5$Mo$_4$O$_{16}$|K. Iida,R. Kajimoto,Y. Mizuno,K. Kamazawa,Y. Inamura,A. Hoshikawa,Y. Yoshida,T. Matsukawa,T. Ishigaki,Y. Kawamura,S. Ibuka,T. Yokoo,S. Itoh,T. Katsufuji###
(1528949, 1528954)
Time-of-flight elastic and inelastic neutron scattering studies on the localized 4d<missing VAR> electron layered perovskite La5Mo4O16.
Featurization terminated normally.
0,0,0,0,0,0,0,0.64,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 0, ',', 2],[141.0, 0, ',', 2],[213.0, 4, 'K', 3]

La5Mo4O16
###Time-of-flight elastic and inelastic neutron scattering studies on the localized $4d$ electron layered perovskite La$_5$Mo$_4$O$_{16}$|K. Iida,R. Kajimoto,Y. Mizuno,K. Kamazawa,Y. Inamura,A. Hoshikawa,Y. Yoshida,T. Matsukawa,T. Ishigaki,Y. Kawamura,S. Ibuka,T. Yokoo,S. Itoh,T. Katsufuji###
(1528988, 1528993)
 The magnetic structure and spin-wave excitations in the quasi-square-latticelayered perovskite compound La5Mo4O16 were studied by a combinationof neutron diffraction and inelastic neutron scattering techniques usingpolycrystalline sample.
Featurization terminated normally.
0,0,0,0,0,0,0,0.64,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 0, ',', 1],[102.0, 0, ',', 1],[174.0, 4, 'K', 2]

B
###Time-of-flight elastic and inelastic neutron scattering studies on the localized $4d$ electron layered perovskite La$_5$Mo$_4$O$_{16}$|K. Iida,R. Kajimoto,Y. Mizuno,K. Kamazawa,Y. Inamura,A. Hoshikawa,Y. Yoshida,T. Matsukawa,T. Ishigaki,Y. Kawamura,S. Ibuka,T. Yokoo,S. Itoh,T. Katsufuji###
(1529127, 1529127)
 The ordered magnetic moments areestimated to be 0.54(2)mutextB for Mo5 (4d<missing VAR>1) ions and1.07(3)mutextB for Mo4 (4d<missing VAR>2) ions at 4 K, which are about halfof the expected values.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 0, ',', 1],[32.0, 0, ',', 1],[40.0, 4, 'K', 0]

Mo5
###Time-of-flight elastic and inelastic neutron scattering studies on the localized $4d$ electron layered perovskite La$_5$Mo$_4$O$_{16}$|K. Iida,R. Kajimoto,Y. Mizuno,K. Kamazawa,Y. Inamura,A. Hoshikawa,Y. Yoshida,T. Matsukawa,T. Ishigaki,Y. Kawamura,S. Ibuka,T. Yokoo,S. Itoh,T. Katsufuji###
(1529131, 1529132)
 The ordered magnetic moments areestimated to be 0.54(2)mutextB for Mo5 (4d<missing VAR>1) ions and1.07(3)mutextB for Mo4 (4d<missing VAR>2) ions at 4 K, which are about halfof the expected values.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 0, ',', 1],[36.0, 0, ',', 1],[35.0, 4, 'K', 0]

B
###Time-of-flight elastic and inelastic neutron scattering studies on the localized $4d$ electron layered perovskite La$_5$Mo$_4$O$_{16}$|K. Iida,R. Kajimoto,Y. Mizuno,K. Kamazawa,Y. Inamura,A. Hoshikawa,Y. Yoshida,T. Matsukawa,T. Ishigaki,Y. Kawamura,S. Ibuka,T. Yokoo,S. Itoh,T. Katsufuji###
(1529151, 1529151)
 The ordered magnetic moments areestimated to be 0.54(2)mutextB for Mo5 (4d<missing VAR>1) ions and1.07(3)mutextB for Mo4 (4d<missing VAR>2) ions at 4 K, which are about halfof the expected values.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 0, ',', 1],[56.0, 0, ',', 1],[16.0, 4, 'K', 0]

Mo4
###Time-of-flight elastic and inelastic neutron scattering studies on the localized $4d$ electron layered perovskite La$_5$Mo$_4$O$_{16}$|K. Iida,R. Kajimoto,Y. Mizuno,K. Kamazawa,Y. Inamura,A. Hoshikawa,Y. Yoshida,T. Matsukawa,T. Ishigaki,Y. Kawamura,S. Ibuka,T. Yokoo,S. Itoh,T. Katsufuji###
(1529155, 1529156)
 The ordered magnetic moments areestimated to be 0.54(2)mutextB for Mo5 (4d<missing VAR>1) ions and1.07(3)mutextB for Mo4 (4d<missing VAR>2) ions at 4 K, which are about halfof the expected values.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 0, ',', 1],[60.0, 0, ',', 1],[11.0, 4, 'K', 0]

Mo
###Time-of-flight elastic and inelastic neutron scattering studies on the localized $4d$ electron layered perovskite La$_5$Mo$_4$O$_{16}$|K. Iida,R. Kajimoto,Y. Mizuno,K. Kamazawa,Y. Inamura,A. Hoshikawa,Y. Yoshida,T. Matsukawa,T. Ishigaki,Y. Kawamura,S. Ibuka,T. Yokoo,S. Itoh,T. Katsufuji###
(1529234, 1529234)
 The inelastic neutron scattering results display strongeasy-axis magnetic anisotropy along the c<missing VAR> axis due to the spin-orbitinteraction in Mo ions evidenced by the spin gap at the magnetic zone center.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 0, ',', 2],[139.0, 0, ',', 2],[67.0, 4, 'K', 1]

La5Mo4O16
###Time-of-flight elastic and inelastic neutron scattering studies on the localized $4d$ electron layered perovskite La$_5$Mo$_4$O$_{16}$|K. Iida,R. Kajimoto,Y. Mizuno,K. Kamazawa,Y. Inamura,A. Hoshikawa,Y. Yoshida,T. Matsukawa,T. Ishigaki,Y. Kawamura,S. Ibuka,T. Yokoo,S. Itoh,T. Katsufuji###
(1529382, 1529387)
 Strong Ising-likeanisotropy and weak interlayer coupling compared with the intralayer exchangeinteraction can explain both the high-temperature magnetoresistance andlong-time magnetization decay recently observed in La5Mo4O16.
Featurization terminated normally.
0,0,0,0,0,0,0,0.64,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[289.0, 0, ',', 4],[287.0, 0, ',', 4],[215.0, 4, 'K', 3]

Gd3RuSn6
###Magnetic behavior of new compounds, Gd3RuSn6 and Tb3RuSn6|Sanjay K Upadhyay,Kartik K Iyer,E. V. Sampathkumaran###
(1529409, 1529413)
Magnetic behavior of new compounds, Gd3RuSn6 and Tb3RuSn6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 19, 'and', 2],[144.0, 25, 'K', 2],[180.0, 14, 'and', 3],[227.0, 75, 'K', 4],[286.0, 1.8, 'K', 5],[298.0, 50, 'kOe', 5]

Tb3RuSn6
###Magnetic behavior of new compounds, Gd3RuSn6 and Tb3RuSn6|Sanjay K Upadhyay,Kartik K Iyer,E. V. Sampathkumaran###
(1529417, 1529421)
Magnetic behavior of new compounds, Gd3RuSn6 and Tb3RuSn6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 19, 'and', 2],[136.0, 25, 'K', 2],[172.0, 14, 'and', 3],[219.0, 75, 'K', 4],[278.0, 1.8, 'K', 5],[290.0, 50, 'kOe', 5]

Gd3RuSn6
###Magnetic behavior of new compounds, Gd3RuSn6 and Tb3RuSn6|Sanjay K Upadhyay,Kartik K Iyer,E. V. Sampathkumaran###
(1529475, 1529479)
 We report temperature (T) dependence of dc magnetization, electricalresistivity (rho(T)), and heat-capacity of rare-earth (R) compounds, Gd3RuSn6and Tb3RuSn6, which are found to crystallize in the Yb3CoSn6-type orthorhombicstructure (space group Cmcm).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 19, 'and', 1],[78.0, 25, 'K', 1],[114.0, 14, 'and', 2],[161.0, 75, 'K', 3],[220.0, 1.8, 'K', 4],[232.0, 50, 'kOe', 4]

Tb3RuSn6
###Magnetic behavior of new compounds, Gd3RuSn6 and Tb3RuSn6|Sanjay K Upadhyay,Kartik K Iyer,E. V. Sampathkumaran###
(1529484, 1529488)
 We report temperature (T) dependence of dc magnetization, electricalresistivity (rho(T)), and heat-capacity of rare-earth (R) compounds, Gd3RuSn6and Tb3RuSn6, which are found to crystallize in the Yb3CoSn6-type orthorhombicstructure (space group Cmcm).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 19, 'and', 1],[69.0, 25, 'K', 1],[105.0, 14, 'and', 2],[152.0, 75, 'K', 3],[211.0, 1.8, 'K', 4],[223.0, 50, 'kOe', 4]

Yb3CoSn6
###Magnetic behavior of new compounds, Gd3RuSn6 and Tb3RuSn6|Sanjay K Upadhyay,Kartik K Iyer,E. V. Sampathkumaran###
(1529505, 1529509)
 We report temperature (T) dependence of dc magnetization, electricalresistivity (rho(T)), and heat-capacity of rare-earth (R) compounds, Gd3RuSn6and Tb3RuSn6, which are found to crystallize in the Yb3CoSn6-type orthorhombicstructure (space group Cmcm).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 19, 'and', 1],[48.0, 25, 'K', 1],[84.0, 14, 'and', 2],[131.0, 75, 'K', 3],[190.0, 1.8, 'K', 4],[202.0, 50, 'kOe', 4]

N
###Magnetic behavior of new compounds, Gd3RuSn6 and Tb3RuSn6|Sanjay K Upadhyay,Kartik K Iyer,E. V. Sampathkumaran###
(1529554, 1529554)
 The results establish that there is an onset ofantiferromagnetic order near (T<missing VAR>N) 19 and 25 K respectively.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 19, 'and', 0],[3.0, 25, 'K', 0],[39.0, 14, 'and', 1],[86.0, 75, 'K', 2],[145.0, 1.8, 'K', 3],[157.0, 50, 'kOe', 3]

In
###Magnetic behavior of new compounds, Gd3RuSn6 and Tb3RuSn6|Sanjay K Upadhyay,Kartik K Iyer,E. V. Sampathkumaran###
(1529562, 1529562)
 In addition, wefind that there is another magnetic transition for both the cases around 14 and17 K respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 19, 'and', 1],[5.0, 25, 'K', 1],[31.0, 14, 'and', 0],[78.0, 75, 'K', 1],[137.0, 1.8, 'K', 2],[149.0, 50, 'kOe', 2]

K
###Magnetic behavior of new compounds, Gd3RuSn6 and Tb3RuSn6|Sanjay K Upadhyay,Kartik K Iyer,E. V. Sampathkumaran###
(1529598, 1529598)
 In addition, wefind that there is another magnetic transition for both the cases around 14 and17 K respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 19, 'and', 1],[41.0, 25, 'K', 1],[5.0, 14, 'and', 0],[42.0, 75, 'K', 1],[101.0, 1.8, 'K', 2],[113.0, 50, 'kOe', 2]

In
###Magnetic behavior of new compounds, Gd3RuSn6 and Tb3RuSn6|Sanjay K Upadhyay,Kartik K Iyer,E. V. Sampathkumaran###
(1529603, 1529603)
 In the case of the Gd compound, the spin-scatteringcontribution to rho is found to increase below 75 K as the material is cooledtowards T<missing VAR>N, thereby resulting in a minimum in the plot of rho(T) unexpectedfor Gd based systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 19, 'and', 2],[46.0, 25, 'K', 2],[10.0, 14, 'and', 1],[37.0, 75, 'K', 0],[96.0, 1.8, 'K', 1],[108.0, 50, 'kOe', 1]

Gd
###Magnetic behavior of new compounds, Gd3RuSn6 and Tb3RuSn6|Sanjay K Upadhyay,Kartik K Iyer,E. V. Sampathkumaran###
(1529613, 1529613)
 In the case of the Gd compound, the spin-scatteringcontribution to rho is found to increase below 75 K as the material is cooledtowards T<missing VAR>N, thereby resulting in a minimum in the plot of rho(T) unexpectedfor Gd based systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 19, 'and', 2],[56.0, 25, 'K', 2],[20.0, 14, 'and', 1],[27.0, 75, 'K', 0],[86.0, 1.8, 'K', 1],[98.0, 50, 'kOe', 1]

N
###Magnetic behavior of new compounds, Gd3RuSn6 and Tb3RuSn6|Sanjay K Upadhyay,Kartik K Iyer,E. V. Sampathkumaran###
(1529656, 1529656)
 In the case of the Gd compound, the spin-scatteringcontribution to rho is found to increase below 75 K as the material is cooledtowards T<missing VAR>N, thereby resulting in a minimum in the plot of rho(T) unexpectedfor Gd based systems.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 19, 'and', 2],[99.0, 25, 'K', 2],[63.0, 14, 'and', 1],[16.0, 75, 'K', 0],[43.0, 1.8, 'K', 1],[55.0, 50, 'kOe', 1]

Gd
###Magnetic behavior of new compounds, Gd3RuSn6 and Tb3RuSn6|Sanjay K Upadhyay,Kartik K Iyer,E. V. Sampathkumaran###
(1529687, 1529687)
 In the case of the Gd compound, the spin-scatteringcontribution to rho is found to increase below 75 K as the material is cooledtowards T<missing VAR>N, thereby resulting in a minimum in the plot of rho(T) unexpectedfor Gd based systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 19, 'and', 2],[130.0, 25, 'K', 2],[94.0, 14, 'and', 1],[47.0, 75, 'K', 0],[12.0, 1.8, 'K', 1],[24.0, 50, 'kOe', 1]

S
###Deficiency of the Bulk Spin Hall Effect Model for Spin-Orbit Torques in Magnetic Insulator/Heavy Metal Heterostructures|Junxue Li,Guoqiang Yu,Chi Tang,Yizhou Liu,Zhong Shi,Yawen Liu,Aryan Navabi,Mohammed Aldosary,Qiming Shao,Kang L. Wang,Roger Lake,Jing Shi###
(1529903, 1529903)
 Electrical currents in a magnetic insulator/heavy metal heterostructure caninduce two simultaneous effects, namely, spin Hall magnetoresistance (SMR) onthe heavy metal side and spin-orbit torques (SOTs) on the magnetic insulatorside.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[299.0, 2, 'times', 3]

SO
###Deficiency of the Bulk Spin Hall Effect Model for Spin-Orbit Torques in Magnetic Insulator/Heavy Metal Heterostructures|Junxue Li,Guoqiang Yu,Chi Tang,Yizhou Liu,Zhong Shi,Yawen Liu,Aryan Navabi,Mohammed Aldosary,Qiming Shao,Kang L. Wang,Roger Lake,Jing Shi###
(1529928, 1529929)
 Electrical currents in a magnetic insulator/heavy metal heterostructure caninduce two simultaneous effects, namely, spin Hall magnetoresistance (SMR) onthe heavy metal side and spin-orbit torques (SOTs) on the magnetic insulatorside.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[273.0, 2, 'times', 3]

SH
###Deficiency of the Bulk Spin Hall Effect Model for Spin-Orbit Torques in Magnetic Insulator/Heavy Metal Heterostructures|Junxue Li,Guoqiang Yu,Chi Tang,Yizhou Liu,Zhong Shi,Yawen Liu,Aryan Navabi,Mohammed Aldosary,Qiming Shao,Kang L. Wang,Roger Lake,Jing Shi###
(1529979, 1529980)
 Within the framework of the pure spin current model based on the bulkspin Hall effect (SHE), the ratio of the spin Hall-induced anomalous Halleffect (SH-AHE) to SMR should be equal to the ratio of the field-like torque(FLT) to damping-like torque (DLT).
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[222.0, 2, 'times', 2]

SH
###Deficiency of the Bulk Spin Hall Effect Model for Spin-Orbit Torques in Magnetic Insulator/Heavy Metal Heterostructures|Junxue Li,Guoqiang Yu,Chi Tang,Yizhou Liu,Zhong Shi,Yawen Liu,Aryan Navabi,Mohammed Aldosary,Qiming Shao,Kang L. Wang,Roger Lake,Jing Shi###
(1530007, 1530008)
 Within the framework of the pure spin current model based on the bulkspin Hall effect (SHE), the ratio of the spin Hall-induced anomalous Halleffect (SH-AHE) to SMR should be equal to the ratio of the field-like torque(FLT) to damping-like torque (DLT).
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[194.0, 2, 'times', 2]

H
###Deficiency of the Bulk Spin Hall Effect Model for Spin-Orbit Torques in Magnetic Insulator/Heavy Metal Heterostructures|Junxue Li,Guoqiang Yu,Chi Tang,Yizhou Liu,Zhong Shi,Yawen Liu,Aryan Navabi,Mohammed Aldosary,Qiming Shao,Kang L. Wang,Roger Lake,Jing Shi###
(1530011, 1530011)
 Within the framework of the pure spin current model based on the bulkspin Hall effect (SHE), the ratio of the spin Hall-induced anomalous Halleffect (SH-AHE) to SMR should be equal to the ratio of the field-like torque(FLT) to damping-like torque (DLT).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[191.0, 2, 'times', 2]

S
###Deficiency of the Bulk Spin Hall Effect Model for Spin-Orbit Torques in Magnetic Insulator/Heavy Metal Heterostructures|Junxue Li,Guoqiang Yu,Chi Tang,Yizhou Liu,Zhong Shi,Yawen Liu,Aryan Navabi,Mohammed Aldosary,Qiming Shao,Kang L. Wang,Roger Lake,Jing Shi###
(1530017, 1530017)
 Within the framework of the pure spin current model based on the bulkspin Hall effect (SHE), the ratio of the spin Hall-induced anomalous Halleffect (SH-AHE) to SMR should be equal to the ratio of the field-like torque(FLT) to damping-like torque (DLT).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[185.0, 2, 'times', 2]

F
###Deficiency of the Bulk Spin Hall Effect Model for Spin-Orbit Torques in Magnetic Insulator/Heavy Metal Heterostructures|Junxue Li,Guoqiang Yu,Chi Tang,Yizhou Liu,Zhong Shi,Yawen Liu,Aryan Navabi,Mohammed Aldosary,Qiming Shao,Kang L. Wang,Roger Lake,Jing Shi###
(1530045, 1530045)
 Within the framework of the pure spin current model based on the bulkspin Hall effect (SHE), the ratio of the spin Hall-induced anomalous Halleffect (SH-AHE) to SMR should be equal to the ratio of the field-like torque(FLT) to damping-like torque (DLT).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 2, 'times', 2]

S
###Deficiency of the Bulk Spin Hall Effect Model for Spin-Orbit Torques in Magnetic Insulator/Heavy Metal Heterostructures|Junxue Li,Guoqiang Yu,Chi Tang,Yizhou Liu,Zhong Shi,Yawen Liu,Aryan Navabi,Mohammed Aldosary,Qiming Shao,Kang L. Wang,Roger Lake,Jing Shi###
(1530077, 1530077)
 We perform a quantitative study of SMR,SH-AHE<missing VAR>, and SOTs in a series of thulium iron garnet/platinum or Tm3Fe5O12/Ptheterostructures with different Tm3Fe5O12 thicknesses, where Tm3Fe5O12 is aferrimagnetic insulator with perpendicular magnetic anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 2, 'times', 1]

SH
###Deficiency of the Bulk Spin Hall Effect Model for Spin-Orbit Torques in Magnetic Insulator/Heavy Metal Heterostructures|Junxue Li,Guoqiang Yu,Chi Tang,Yizhou Liu,Zhong Shi,Yawen Liu,Aryan Navabi,Mohammed Aldosary,Qiming Shao,Kang L. Wang,Roger Lake,Jing Shi###
(1530083, 1530084)
 We perform a quantitative study of SMR,SH-AHE<missing VAR>, and SOTs in a series of thulium iron garnet/platinum or Tm3Fe5O12/Ptheterostructures with different Tm3Fe5O12 thicknesses, where Tm3Fe5O12 is aferrimagnetic insulator with perpendicular magnetic anisotropy.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 2, 'times', 1]

H
###Deficiency of the Bulk Spin Hall Effect Model for Spin-Orbit Torques in Magnetic Insulator/Heavy Metal Heterostructures|Junxue Li,Guoqiang Yu,Chi Tang,Yizhou Liu,Zhong Shi,Yawen Liu,Aryan Navabi,Mohammed Aldosary,Qiming Shao,Kang L. Wang,Roger Lake,Jing Shi###
(1530087, 1530087)
 We perform a quantitative study of SMR,SH-AHE<missing VAR>, and SOTs in a series of thulium iron garnet/platinum or Tm3Fe5O12/Ptheterostructures with different Tm3Fe5O12 thicknesses, where Tm3Fe5O12 is aferrimagnetic insulator with perpendicular magnetic anisotropy.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 2, 'times', 1]

SO
###Deficiency of the Bulk Spin Hall Effect Model for Spin-Orbit Torques in Magnetic Insulator/Heavy Metal Heterostructures|Junxue Li,Guoqiang Yu,Chi Tang,Yizhou Liu,Zhong Shi,Yawen Liu,Aryan Navabi,Mohammed Aldosary,Qiming Shao,Kang L. Wang,Roger Lake,Jing Shi###
(1530093, 1530094)
 We perform a quantitative study of SMR,SH-AHE<missing VAR>, and SOTs in a series of thulium iron garnet/platinum or Tm3Fe5O12/Ptheterostructures with different Tm3Fe5O12 thicknesses, where Tm3Fe5O12 is aferrimagnetic insulator with perpendicular magnetic anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 2, 'times', 1]

Tm3Fe5O12/Pt
###Deficiency of the Bulk Spin Hall Effect Model for Spin-Orbit Torques in Magnetic Insulator/Heavy Metal Heterostructures|Junxue Li,Guoqiang Yu,Chi Tang,Yizhou Liu,Zhong Shi,Yawen Liu,Aryan Navabi,Mohammed Aldosary,Qiming Shao,Kang L. Wang,Roger Lake,Jing Shi###
(1530115, 1530122)
 We perform a quantitative study of SMR,SH-AHE<missing VAR>, and SOTs in a series of thulium iron garnet/platinum or Tm3Fe5O12/Ptheterostructures with different Tm3Fe5O12 thicknesses, where Tm3Fe5O12 is aferrimagnetic insulator with perpendicular magnetic anisotropy.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[80.0, 2, 'times', 1]

Tm3Fe5O12
###Deficiency of the Bulk Spin Hall Effect Model for Spin-Orbit Torques in Magnetic Insulator/Heavy Metal Heterostructures|Junxue Li,Guoqiang Yu,Chi Tang,Yizhou Liu,Zhong Shi,Yawen Liu,Aryan Navabi,Mohammed Aldosary,Qiming Shao,Kang L. Wang,Roger Lake,Jing Shi###
(1530131, 1530136)
 We perform a quantitative study of SMR,SH-AHE<missing VAR>, and SOTs in a series of thulium iron garnet/platinum or Tm3Fe5O12/Ptheterostructures with different Tm3Fe5O12 thicknesses, where Tm3Fe5O12 is aferrimagnetic insulator with perpendicular magnetic anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 2, 'times', 1]

Tm3Fe5O12
###Deficiency of the Bulk Spin Hall Effect Model for Spin-Orbit Torques in Magnetic Insulator/Heavy Metal Heterostructures|Junxue Li,Guoqiang Yu,Chi Tang,Yizhou Liu,Zhong Shi,Yawen Liu,Aryan Navabi,Mohammed Aldosary,Qiming Shao,Kang L. Wang,Roger Lake,Jing Shi###
(1530143, 1530148)
 We perform a quantitative study of SMR,SH-AHE<missing VAR>, and SOTs in a series of thulium iron garnet/platinum or Tm3Fe5O12/Ptheterostructures with different Tm3Fe5O12 thicknesses, where Tm3Fe5O12 is aferrimagnetic insulator with perpendicular magnetic anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 2, 'times', 1]

F
###Deficiency of the Bulk Spin Hall Effect Model for Spin-Orbit Torques in Magnetic Insulator/Heavy Metal Heterostructures|Junxue Li,Guoqiang Yu,Chi Tang,Yizhou Liu,Zhong Shi,Yawen Liu,Aryan Navabi,Mohammed Aldosary,Qiming Shao,Kang L. Wang,Roger Lake,Jing Shi###
(1530187, 1530187)
 We find theratio between measured effective fields of FLT and DLT is at least 2 timeslarger than the ratio of the SH-AHE<missing VAR> to SMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 2, 'times', 0]

SH
###Deficiency of the Bulk Spin Hall Effect Model for Spin-Orbit Torques in Magnetic Insulator/Heavy Metal Heterostructures|Junxue Li,Guoqiang Yu,Chi Tang,Yizhou Liu,Zhong Shi,Yawen Liu,Aryan Navabi,Mohammed Aldosary,Qiming Shao,Kang L. Wang,Roger Lake,Jing Shi###
(1530217, 1530218)
 We find theratio between measured effective fields of FLT and DLT is at least 2 timeslarger than the ratio of the SH-AHE<missing VAR> to SMR.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 2, 'times', 0]

H
###Deficiency of the Bulk Spin Hall Effect Model for Spin-Orbit Torques in Magnetic Insulator/Heavy Metal Heterostructures|Junxue Li,Guoqiang Yu,Chi Tang,Yizhou Liu,Zhong Shi,Yawen Liu,Aryan Navabi,Mohammed Aldosary,Qiming Shao,Kang L. Wang,Roger Lake,Jing Shi###
(1530221, 1530221)
 We find theratio between measured effective fields of FLT and DLT is at least 2 timeslarger than the ratio of the SH-AHE<missing VAR> to SMR.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 2, 'times', 0]

S
###Deficiency of the Bulk Spin Hall Effect Model for Spin-Orbit Torques in Magnetic Insulator/Heavy Metal Heterostructures|Junxue Li,Guoqiang Yu,Chi Tang,Yizhou Liu,Zhong Shi,Yawen Liu,Aryan Navabi,Mohammed Aldosary,Qiming Shao,Kang L. Wang,Roger Lake,Jing Shi###
(1530226, 1530226)
 We find theratio between measured effective fields of FLT and DLT is at least 2 timeslarger than the ratio of the SH-AHE<missing VAR> to SMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 2, 'times', 0]

In
###Deficiency of the Bulk Spin Hall Effect Model for Spin-Orbit Torques in Magnetic Insulator/Heavy Metal Heterostructures|Junxue Li,Guoqiang Yu,Chi Tang,Yizhou Liu,Zhong Shi,Yawen Liu,Aryan Navabi,Mohammed Aldosary,Qiming Shao,Kang L. Wang,Roger Lake,Jing Shi###
(1530231, 1530231)
 In addition, the bulk SHE<missing VAR> modelgrossly underestimates the spin torque efficiency of FLT.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 2, 'times', 1]

SH
###Deficiency of the Bulk Spin Hall Effect Model for Spin-Orbit Torques in Magnetic Insulator/Heavy Metal Heterostructures|Junxue Li,Guoqiang Yu,Chi Tang,Yizhou Liu,Zhong Shi,Yawen Liu,Aryan Navabi,Mohammed Aldosary,Qiming Shao,Kang L. Wang,Roger Lake,Jing Shi###
(1530240, 1530241)
 In addition, the bulk SHE<missing VAR> modelgrossly underestimates the spin torque efficiency of FLT.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 2, 'times', 1]

F
###Deficiency of the Bulk Spin Hall Effect Model for Spin-Orbit Torques in Magnetic Insulator/Heavy Metal Heterostructures|Junxue Li,Guoqiang Yu,Chi Tang,Yizhou Liu,Zhong Shi,Yawen Liu,Aryan Navabi,Mohammed Aldosary,Qiming Shao,Kang L. Wang,Roger Lake,Jing Shi###
(1530261, 1530261)
 In addition, the bulk SHE<missing VAR> modelgrossly underestimates the spin torque efficiency of FLT.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 2, 'times', 1]

SH
###Deficiency of the Bulk Spin Hall Effect Model for Spin-Orbit Torques in Magnetic Insulator/Heavy Metal Heterostructures|Junxue Li,Guoqiang Yu,Chi Tang,Yizhou Liu,Zhong Shi,Yawen Liu,Aryan Navabi,Mohammed Aldosary,Qiming Shao,Kang L. Wang,Roger Lake,Jing Shi###
(1530281, 1530282)
 Our results revealdeficiencies of the bulk SHE<missing VAR> model and also address the importance ofinterfacial effects such as the Rashba and magnetic proximity effects inmagnetic insulator/heavy metal heterostructures.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 2, 'times', 2]

BaMnSb2
###Nontrivial Berry phase in magnetic BaMnSb2 semimetal|Silu Huang,Jisun Kim,W. A. Shelton,E. W. Plummer,Rongying Jin###
(1530352, 1530355)
Nontrivial Berry phase in magnetic BaMnSb2 semimetal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 2, 'D', 2],[112.0, 3, 'D', 2],[200.0, 3, 'D', 4],[259.0, 3, 'D', 5],[268.0, 2, 'D', 5],[358.0, 286, 'K', 7]

I
###Nontrivial Berry phase in magnetic BaMnSb2 semimetal|Silu Huang,Jisun Kim,W. A. Shelton,E. W. Plummer,Rongying Jin###
(1530498, 1530498)
 The latter are semimetalswith Dirac/Weyl cones either not tilted (type I) or tilted (type II).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 2, 'D', 1],[31.0, 3, 'D', 1],[57.0, 3, 'D', 1],[116.0, 3, 'D', 2],[125.0, 2, 'D', 2],[215.0, 286, 'K', 4]

I
###Nontrivial Berry phase in magnetic BaMnSb2 semimetal|Silu Huang,Jisun Kim,W. A. Shelton,E. W. Plummer,Rongying Jin###
(1530509, 1530509)
 The latter are semimetalswith Dirac/Weyl cones either not tilted (type I) or tilted (type II).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 2, 'D', 1],[42.0, 3, 'D', 1],[46.0, 3, 'D', 1],[105.0, 3, 'D', 2],[114.0, 2, 'D', 2],[204.0, 286, 'K', 4]

BaMnSb2
###Nontrivial Berry phase in magnetic BaMnSb2 semimetal|Silu Huang,Jisun Kim,W. A. Shelton,E. W. Plummer,Rongying Jin###
(1530606, 1530609)
 Here, we demonstrate experimentally that canted antiferromagneticBaMnSb2 is a 3D Weyl semimetal with a 2D electronic structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 2, 'D', 3],[139.0, 3, 'D', 3],[51.0, 3, 'D', 1],[5.0, 3, 'D', 0],[14.0, 2, 'D', 0],[104.0, 286, 'K', 2]

WTe2
###Temperature independent band structure of WTe2 as observed from ARPES|S. Thirupathaiah,Rajveer Jha,Banabir Pal,J. S. Matias,P. Kumar Das,I. Vobornik,R. A. Ribeiro,D. D. Sarma###
(1530777, 1530779)
Temperature independent band structure of WTe2 as observed from ARPES.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[293.0, 20, 'and', 3],[294.0, 130, 'K', 3]

S
###Temperature independent band structure of WTe2 as observed from ARPES|S. Thirupathaiah,Rajveer Jha,Banabir Pal,J. S. Matias,P. Kumar Das,I. Vobornik,R. A. Ribeiro,D. D. Sarma###
(1530791, 1530791)
Temperature independent band structure of WTe2 as observed from ARPES.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[281.0, 20, 'and', 3],[282.0, 130, 'K', 3]

WTe2
###Temperature independent band structure of WTe2 as observed from ARPES|S. Thirupathaiah,Rajveer Jha,Banabir Pal,J. S. Matias,P. Kumar Das,I. Vobornik,R. A. Ribeiro,D. D. Sarma###
(1530819, 1530821)
 Extremely large magnetoresistance (XMR), observed in transition metaldichalcogendies, WTe2, has attracted recently a great deal of researchinterests as it shows no sign of saturation up to the magnetic field as high as60 T<missing VAR>, in addition to the presence of type-II Weyl fermions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[251.0, 20, 'and', 2],[252.0, 130, 'K', 2]

II
###Temperature independent band structure of WTe2 as observed from ARPES|S. Thirupathaiah,Rajveer Jha,Banabir Pal,J. S. Matias,P. Kumar Das,I. Vobornik,R. A. Ribeiro,D. D. Sarma###
(1530893, 1530894)
 Extremely large magnetoresistance (XMR), observed in transition metaldichalcogendies, WTe2, has attracted recently a great deal of researchinterests as it shows no sign of saturation up to the magnetic field as high as60 T<missing VAR>, in addition to the presence of type-II Weyl fermions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 20, 'and', 2],[179.0, 130, 'K', 2]

In
###Temperature independent band structure of WTe2 as observed from ARPES|S. Thirupathaiah,Rajveer Jha,Banabir Pal,J. S. Matias,P. Kumar Das,I. Vobornik,R. A. Ribeiro,D. D. Sarma###
(1530953, 1530953)
 In this contribution, we study theband structure of WTe2 using angle-resolved photoemission spectroscopy(ARPES) and first-principle calculations to demonstrate that the temperaturedependent band structure has no substantial effect on the temperature dependentXMR as our measurements do not show band structure changes on increasing thesample temperature between 20 and 130 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 20, 'and', 0],[120.0, 130, 'K', 0]

WTe2
###Temperature independent band structure of WTe2 as observed from ARPES|S. Thirupathaiah,Rajveer Jha,Banabir Pal,J. S. Matias,P. Kumar Das,I. Vobornik,R. A. Ribeiro,D. D. Sarma###
(1530973, 1530975)
 In this contribution, we study theband structure of WTe2 using angle-resolved photoemission spectroscopy(ARPES) and first-principle calculations to demonstrate that the temperaturedependent band structure has no substantial effect on the temperature dependentXMR as our measurements do not show band structure changes on increasing thesample temperature between 20 and 130 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 20, 'and', 0],[98.0, 130, 'K', 0]

S
###Temperature independent band structure of WTe2 as observed from ARPES|S. Thirupathaiah,Rajveer Jha,Banabir Pal,J. S. Matias,P. Kumar Das,I. Vobornik,R. A. Ribeiro,D. D. Sarma###
(1530993, 1530993)
 In this contribution, we study theband structure of WTe2 using angle-resolved photoemission spectroscopy(ARPES) and first-principle calculations to demonstrate that the temperaturedependent band structure has no substantial effect on the temperature dependentXMR as our measurements do not show band structure changes on increasing thesample temperature between 20 and 130 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 20, 'and', 0],[80.0, 130, 'K', 0]

WTe2
###Temperature independent band structure of WTe2 as observed from ARPES|S. Thirupathaiah,Rajveer Jha,Banabir Pal,J. S. Matias,P. Kumar Das,I. Vobornik,R. A. Ribeiro,D. D. Sarma###
(1531204, 1531206)
 Our results provide invaluable information in shaping themechanism of temperature dependent XMR in WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 20, 'and', 3],[131.0, 130, 'K', 3]

GaAs
###Spin-orbit coupling and transport of strongly correlated two-dimensional systems|Jian Huang,L. N. Pfeiffer,K. W. West###
(1531257, 1531258)
 Measuring the magnetoresistance (MR) of ultraclean it GaAs two-dimensionalholes in a large rs range of 20-50, two striking behaviors in relation tothe spin-orbit coupling (SOC) emerge in response to strong electron-electroninteraction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, -50, ',', 0],[267.0, 30, ',', 2],[338.0, 40, ',', 4]

(SOC)
###Spin-orbit coupling and transport of strongly correlated two-dimensional systems|Jian Huang,L. N. Pfeiffer,K. W. West###
(1531306, 1531310)
 Measuring the magnetoresistance (MR) of ultraclean it GaAs two-dimensionalholes in a large rs range of 20-50, two striking behaviors in relation tothe spin-orbit coupling (SOC) emerge in response to strong electron-electroninteraction.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, -50, ',', 0],[215.0, 30, ',', 2],[286.0, 40, ',', 4]

SOC
###Spin-orbit coupling and transport of strongly correlated two-dimensional systems|Jian Huang,L. N. Pfeiffer,K. W. West###
(1531448, 1531450)
Second, as the SOC-driven correction Deltarho to the MR decreases withreducing carrier density (or the in-plane wave vector), it exhibits an upturnin the close proximity just above pc where rs is beyond 30, indicating asubstantially enhanced SOC effect.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, -50, ',', 2],[75.0, 30, ',', 0],[146.0, 40, ',', 2]

SOC
###Spin-orbit coupling and transport of strongly correlated two-dimensional systems|Jian Huang,L. N. Pfeiffer,K. W. West###
(1531537, 1531539)
Second, as the SOC-driven correction Deltarho to the MR decreases withreducing carrier density (or the in-plane wave vector), it exhibits an upturnin the close proximity just above pc where rs is beyond 30, indicating asubstantially enhanced SOC effect.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[256.0, -50, ',', 2],[12.0, 30, ',', 0],[57.0, 40, ',', 2]

SOC
###Spin-orbit coupling and transport of strongly correlated two-dimensional systems|Jian Huang,L. N. Pfeiffer,K. W. West###
(1531571, 1531573)
 This peculiar behavior echoes with a trendof delocalization long suspected for the SOC-interaction interplay.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[290.0, -50, ',', 3],[46.0, 30, ',', 1],[23.0, 40, ',', 1]

TaSb2
###Anisotropic Fermi surface probed by the de Haas-van Alphen oscillation in proposed Dirac Semimetal TaSb$_{2}$|Arnab Pariari,Ratnadwip Singha,Shubhankar Roy,Biswarup Satpati,Prabhat Mandal###
(1531686, 1531688)
Anisotropic Fermi surface probed by the de Haas-van Alphen oscillation in proposed Dirac Semimetal TaSb2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TaSb2
###Anisotropic Fermi surface probed by the de Haas-van Alphen oscillation in proposed Dirac Semimetal TaSb$_{2}$|Arnab Pariari,Ratnadwip Singha,Shubhankar Roy,Biswarup Satpati,Prabhat Mandal###
(1531691, 1531693)
 TaSb2 has been predicted theoretically and proposed throughmagnetotransport experiment to be a topological semimetal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Anisotropic Fermi surface probed by the de Haas-van Alphen oscillation in proposed Dirac Semimetal TaSb$_{2}$|Arnab Pariari,Ratnadwip Singha,Shubhankar Roy,Biswarup Satpati,Prabhat Mandal###
(1531725, 1531725)
 In earlier reports,the Shubnikov-de Haas oscillation has been analyzed to probe the Fermi surface,with magnetic field along a particular crystallographic axis only.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Negative spin Hall magnetoresistance of Pt on the bulk easy-plane antiferromagnet NiO|Geert R. Hoogeboom,Aisha Aqeel,Timo Kuschel,Thomas T. M. Palstra,Bart J. van Wees###
(1532111, 1532111)
Negative spin Hall magnetoresistance of Pt on the bulk easy-plane antiferromagnet NiO.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 0.25, 'T', 2],[410.0, -2, ',', 7]

NiO
###Negative spin Hall magnetoresistance of Pt on the bulk easy-plane antiferromagnet NiO|Geert R. Hoogeboom,Aisha Aqeel,Timo Kuschel,Thomas T. M. Palstra,Bart J. van Wees###
(1532125, 1532126)
Negative spin Hall magnetoresistance of Pt on the bulk easy-plane antiferromagnet NiO.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 0.25, 'T', 2],[395.0, -2, ',', 7]

S
###Negative spin Hall magnetoresistance of Pt on the bulk easy-plane antiferromagnet NiO|Geert R. Hoogeboom,Aisha Aqeel,Timo Kuschel,Thomas T. M. Palstra,Bart J. van Wees###
(1532142, 1532142)
 We report on spin Hall magnetoresistance (SMR) measurements of Pt Hall barson the antiferromagnetic NiO(111) single crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 0.25, 'T', 1],[379.0, -2, ',', 6]

Pt
###Negative spin Hall magnetoresistance of Pt on the bulk easy-plane antiferromagnet NiO|Geert R. Hoogeboom,Aisha Aqeel,Timo Kuschel,Thomas T. M. Palstra,Bart J. van Wees###
(1532151, 1532151)
 We report on spin Hall magnetoresistance (SMR) measurements of Pt Hall barson the antiferromagnetic NiO(111) single crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 0.25, 'T', 1],[370.0, -2, ',', 6]

S
###Negative spin Hall magnetoresistance of Pt on the bulk easy-plane antiferromagnet NiO|Geert R. Hoogeboom,Aisha Aqeel,Timo Kuschel,Thomas T. M. Palstra,Bart J. van Wees###
(1532177, 1532177)
 An SMR with a sign oppositeof conventional SMR is observed over a wide range of temperatures as well asmagnetic fields stronger than 0.25T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 0.25, 'T', 0],[344.0, -2, ',', 5]

S
###Negative spin Hall magnetoresistance of Pt on the bulk easy-plane antiferromagnet NiO|Geert R. Hoogeboom,Aisha Aqeel,Timo Kuschel,Thomas T. M. Palstra,Bart J. van Wees###
(1532194, 1532194)
 An SMR with a sign oppositeof conventional SMR is observed over a wide range of temperatures as well asmagnetic fields stronger than 0.25T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 0.25, 'T', 0],[327.0, -2, ',', 5]

S
###Negative spin Hall magnetoresistance of Pt on the bulk easy-plane antiferromagnet NiO|Geert R. Hoogeboom,Aisha Aqeel,Timo Kuschel,Thomas T. M. Palstra,Bart J. van Wees###
(1532241, 1532241)
 The negative sign of the SMR can beexplained by the alignment of magnetic moments being almost perpendicular tothe external magnetic field within the easy plane (111) of the antiferromagnet.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 0.25, 'T', 1],[280.0, -2, ',', 4]

S
###Negative spin Hall magnetoresistance of Pt on the bulk easy-plane antiferromagnet NiO|Geert R. Hoogeboom,Aisha Aqeel,Timo Kuschel,Thomas T. M. Palstra,Bart J. van Wees###
(1532372, 1532372)
 The SMR signalstrength decreases with increasing temperature, primarily due to the decreasein Neel order by including fluctuations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 0.25, 'T', 3],[149.0, -2, ',', 2]

N
###Negative spin Hall magnetoresistance of Pt on the bulk easy-plane antiferromagnet NiO|Geert R. Hoogeboom,Aisha Aqeel,Timo Kuschel,Thomas T. M. Palstra,Bart J. van Wees###
(1532403, 1532403)
 The SMR signalstrength decreases with increasing temperature, primarily due to the decreasein Neel order by including fluctuations.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 0.25, 'T', 3],[118.0, -2, ',', 2]

S
###Negative spin Hall magnetoresistance of Pt on the bulk easy-plane antiferromagnet NiO|Geert R. Hoogeboom,Aisha Aqeel,Timo Kuschel,Thomas T. M. Palstra,Bart J. van Wees###
(1532428, 1532428)
 An increasing magnetic fieldincreases the SMR signal strength as there are less domains and the magneticmoments are more strongly manipulated at high magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[200.0, 0.25, 'T', 4],[93.0, -2, ',', 1]

S
###Negative spin Hall magnetoresistance of Pt on the bulk easy-plane antiferromagnet NiO|Geert R. Hoogeboom,Aisha Aqeel,Timo Kuschel,Thomas T. M. Palstra,Bart J. van Wees###
(1532474, 1532474)
 The SMR issaturated at an applied magnetic field of 6T<missing VAR> resulting in a spin-mixingconductance of sim1018 Omega-1m<missing VAR>-2, which is comparable to thatof Pt on insulating ferrimagnets such as yttrium iron garnet.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[246.0, 0.25, 'T', 5],[47.0, -2, ',', 0]

Pt
###Negative spin Hall magnetoresistance of Pt on the bulk easy-plane antiferromagnet NiO|Geert R. Hoogeboom,Aisha Aqeel,Timo Kuschel,Thomas T. M. Palstra,Bart J. van Wees###
(1532538, 1532538)
 The SMR issaturated at an applied magnetic field of 6T<missing VAR> resulting in a spin-mixingconductance of sim1018 Omega-1m<missing VAR>-2, which is comparable to thatof Pt on insulating ferrimagnets such as yttrium iron garnet.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[310.0, 0.25, 'T', 5],[17.0, -2, ',', 0]

II
###The extremely large magnetoresistance in the Candidate Type-II Weyl semimetal MoTe2|F. C. Chen,H. Y. Lv,X. Luo,W. J. Lu,Q. L. Pei,G. T. Lin,Y. Y. Han,X. B. Zhu,W. H. Song,Y. P. Sun###
(1532601, 1532602)
The extremely large magnetoresistance in the Candidate Type-II Weyl semimetal MoTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[232.0, 3, 'D', 3],[246.0, 1.9, 'is', 3]

MoTe2
###The extremely large magnetoresistance in the Candidate Type-II Weyl semimetal MoTe2|F. C. Chen,H. Y. Lv,X. Luo,W. J. Lu,Q. L. Pei,G. T. Lin,Y. Y. Han,X. B. Zhu,W. H. Song,Y. P. Sun###
(1532608, 1532610)
The extremely large magnetoresistance in the Candidate Type-II Weyl semimetal MoTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[224.0, 3, 'D', 3],[238.0, 1.9, 'is', 3]

P
###The extremely large magnetoresistance in the Candidate Type-II Weyl semimetal MoTe2|F. C. Chen,H. Y. Lv,X. Luo,W. J. Lu,Q. L. Pei,G. T. Lin,Y. Y. Han,X. B. Zhu,W. H. Song,Y. P. Sun###
(1532654, 1532654)
 We performed the angle dependent magnetoresistance (MR), Hall effectmeasurements, the temperature dependent magneto-thermoelectric power (TEP) S(T)measurements, and the first-principles calculations to study the electronicproperties of orthorhombic phase MoTe2 (Td-MoTe2), which was proposed to beelectronically two-dimensional (2D).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[180.0, 3, 'D', 2],[194.0, 1.9, 'is', 2]

S
###The extremely large magnetoresistance in the Candidate Type-II Weyl semimetal MoTe2|F. C. Chen,H. Y. Lv,X. Luo,W. J. Lu,Q. L. Pei,G. T. Lin,Y. Y. Han,X. B. Zhu,W. H. Song,Y. P. Sun###
(1532657, 1532657)
 We performed the angle dependent magnetoresistance (MR), Hall effectmeasurements, the temperature dependent magneto-thermoelectric power (TEP) S(T)measurements, and the first-principles calculations to study the electronicproperties of orthorhombic phase MoTe2 (Td-MoTe2), which was proposed to beelectronically two-dimensional (2D).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[177.0, 3, 'D', 2],[191.0, 1.9, 'is', 2]

MoTe2
###The extremely large magnetoresistance in the Candidate Type-II Weyl semimetal MoTe2|F. C. Chen,H. Y. Lv,X. Luo,W. J. Lu,Q. L. Pei,G. T. Lin,Y. Y. Han,X. B. Zhu,W. H. Song,Y. P. Sun###
(1532693, 1532695)
 We performed the angle dependent magnetoresistance (MR), Hall effectmeasurements, the temperature dependent magneto-thermoelectric power (TEP) S(T)measurements, and the first-principles calculations to study the electronicproperties of orthorhombic phase MoTe2 (Td-MoTe2), which was proposed to beelectronically two-dimensional (2D).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 3, 'D', 2],[153.0, 1.9, 'is', 2]

Te2
###The extremely large magnetoresistance in the Candidate Type-II Weyl semimetal MoTe2|F. C. Chen,H. Y. Lv,X. Luo,W. J. Lu,Q. L. Pei,G. T. Lin,Y. Y. Han,X. B. Zhu,W. H. Song,Y. P. Sun###
(1532701, 1532702)
 We performed the angle dependent magnetoresistance (MR), Hall effectmeasurements, the temperature dependent magneto-thermoelectric power (TEP) S(T)measurements, and the first-principles calculations to study the electronicproperties of orthorhombic phase MoTe2 (Td-MoTe2), which was proposed to beelectronically two-dimensional (2D).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 3, 'D', 2],[146.0, 1.9, 'is', 2]

MoTe2
###The extremely large magnetoresistance in the Candidate Type-II Weyl semimetal MoTe2|F. C. Chen,H. Y. Lv,X. Luo,W. J. Lu,Q. L. Pei,G. T. Lin,Y. Y. Han,X. B. Zhu,W. H. Song,Y. P. Sun###
(1532744, 1532746)
 There are some interesting findings aboutTd-MoTe2 (1) A scaling approachepsilontheta(sin2thetagamma-2cos2theta)1/2 is applied, wheretheta is the magnetic field angle with respect to the c<missing VAR> axis of the crystaland gamma is the mass anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 3, 'D', 1],[102.0, 1.9, 'is', 1]

MoTe2
###The extremely large magnetoresistance in the Candidate Type-II Weyl semimetal MoTe2|F. C. Chen,H. Y. Lv,X. Luo,W. J. Lu,Q. L. Pei,G. T. Lin,Y. Y. Han,X. B. Zhu,W. H. Song,Y. P. Sun###
(1532856, 1532858)
 Unexpectedly, the electronically 3Dcharacter with gamma as low as 1.9 is observed in Td-MoTe2; (2) The possibleLifshitz transition and the following electronic structure change can beverified around T<missing VAR>150 K and T<missing VAR>60 K, which is supported by the evidence of theslop changing of the temperature dependence of TEP, the carrier densityextracted from Hall resistivity and the onset temperature of gamma obtainedfrom the MR measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 3, 'D', 0],[8.0, 1.9, 'is', 0]

K
###The extremely large magnetoresistance in the Candidate Type-II Weyl semimetal MoTe2|F. C. Chen,H. Y. Lv,X. Luo,W. J. Lu,Q. L. Pei,G. T. Lin,Y. Y. Han,X. B. Zhu,W. H. Song,Y. P. Sun###
(1532898, 1532898)
 Unexpectedly, the electronically 3Dcharacter with gamma as low as 1.9 is observed in Td-MoTe2; (2) The possibleLifshitz transition and the following electronic structure change can beverified around T<missing VAR>150 K and T<missing VAR>60 K, which is supported by the evidence of theslop changing of the temperature dependence of TEP, the carrier densityextracted from Hall resistivity and the onset temperature of gamma obtainedfrom the MR measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 3, 'D', 0],[50.0, 1.9, 'is', 0]

K
###The extremely large magnetoresistance in the Candidate Type-II Weyl semimetal MoTe2|F. C. Chen,H. Y. Lv,X. Luo,W. J. Lu,Q. L. Pei,G. T. Lin,Y. Y. Han,X. B. Zhu,W. H. Song,Y. P. Sun###
(1532905, 1532905)
 Unexpectedly, the electronically 3Dcharacter with gamma as low as 1.9 is observed in Td-MoTe2; (2) The possibleLifshitz transition and the following electronic structure change can beverified around T<missing VAR>150 K and T<missing VAR>60 K, which is supported by the evidence of theslop changing of the temperature dependence of TEP, the carrier densityextracted from Hall resistivity and the onset temperature of gamma obtainedfrom the MR measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 3, 'D', 0],[57.0, 1.9, 'is', 0]

P
###The extremely large magnetoresistance in the Candidate Type-II Weyl semimetal MoTe2|F. C. Chen,H. Y. Lv,X. Luo,W. J. Lu,Q. L. Pei,G. T. Lin,Y. Y. Han,X. B. Zhu,W. H. Song,Y. P. Sun###
(1532941, 1532941)
 Unexpectedly, the electronically 3Dcharacter with gamma as low as 1.9 is observed in Td-MoTe2; (2) The possibleLifshitz transition and the following electronic structure change can beverified around T<missing VAR>150 K and T<missing VAR>60 K, which is supported by the evidence of theslop changing of the temperature dependence of TEP, the carrier densityextracted from Hall resistivity and the onset temperature of gamma obtainedfrom the MR measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 3, 'D', 0],[93.0, 1.9, 'is', 0]

MoTe2
###The extremely large magnetoresistance in the Candidate Type-II Weyl semimetal MoTe2|F. C. Chen,H. Y. Lv,X. Luo,W. J. Lu,Q. L. Pei,G. T. Lin,Y. Y. Han,X. B. Zhu,W. H. Song,Y. P. Sun###
(1532999, 1533001)
 The extremely large MR effect in Td-MoTe2 couldoriginate from the combination of the electron-hole compensation and aparticular orbital texture on the electron pocket, which is supported by thecalculations of electronic structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 3, 'D', 1],[151.0, 1.9, 'is', 1]

SO
###Spin Hall effect from hybridized 3$d$-4$p$ orbitals|Yong-Chang Lau,Hwachol Lee,Kohji Nakamura,Masamitsu Hayashi###
(1533182, 1533183)
 Electrical manipulation of magnetization by spin-orbit torque (SOT) has shownpromise for realizing reliable magnetic memories and oscillators.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[230.0, 0.01, ',', 3]

SO
###Spin Hall effect from hybridized 3$d$-4$p$ orbitals|Yong-Chang Lau,Hwachol Lee,Kohji Nakamura,Masamitsu Hayashi###
(1533229, 1533230)
 To date, thegeneration of transverse spin current and SOT<missing VAR>, whether it is of spin Halleffect (SHE), Rashba-Edelstein effect or spin-momentum locking origin, reliesprimarily on materials or heterostructures containing 5d<missing VAR> or 6p<missing VAR> heavyelements with strong spin-orbit coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[183.0, 0.01, ',', 2]

SH
###Spin Hall effect from hybridized 3$d$-4$p$ orbitals|Yong-Chang Lau,Hwachol Lee,Kohji Nakamura,Masamitsu Hayashi###
(1533250, 1533251)
 To date, thegeneration of transverse spin current and SOT<missing VAR>, whether it is of spin Halleffect (SHE), Rashba-Edelstein effect or spin-momentum locking origin, reliesprimarily on materials or heterostructures containing 5d<missing VAR> or 6p<missing VAR> heavyelements with strong spin-orbit coupling.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 0.01, ',', 2]

CoGa
###Spin Hall effect from hybridized 3$d$-4$p$ orbitals|Yong-Chang Lau,Hwachol Lee,Kohji Nakamura,Masamitsu Hayashi###
(1533324, 1533325)
 Here we show that a paramagnetic CoGacompound possesses large enough spin Hall angle to allow robust SOT<missing VAR> switchingof perpendicularly-magnetized ferrimagnetic MnGa films in CoGa/MnGa/Oxideheterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 0.01, ',', 1]

SO
###Spin Hall effect from hybridized 3$d$-4$p$ orbitals|Yong-Chang Lau,Hwachol Lee,Kohji Nakamura,Masamitsu Hayashi###
(1533348, 1533349)
 Here we show that a paramagnetic CoGacompound possesses large enough spin Hall angle to allow robust SOT<missing VAR> switchingof perpendicularly-magnetized ferrimagnetic MnGa films in CoGa/MnGa/Oxideheterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 0.01, ',', 1]

MnGa
###Spin Hall effect from hybridized 3$d$-4$p$ orbitals|Yong-Chang Lau,Hwachol Lee,Kohji Nakamura,Masamitsu Hayashi###
(1533363, 1533364)
 Here we show that a paramagnetic CoGacompound possesses large enough spin Hall angle to allow robust SOT<missing VAR> switchingof perpendicularly-magnetized ferrimagnetic MnGa films in CoGa/MnGa/Oxideheterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 0.01, ',', 1]

CoGa/MnGa
###Spin Hall effect from hybridized 3$d$-4$p$ orbitals|Yong-Chang Lau,Hwachol Lee,Kohji Nakamura,Masamitsu Hayashi###
(1533370, 1533374)
 Here we show that a paramagnetic CoGacompound possesses large enough spin Hall angle to allow robust SOT<missing VAR> switchingof perpendicularly-magnetized ferrimagnetic MnGa films in CoGa/MnGa/Oxideheterostructures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[39.0, 0.01, ',', 1]

Co
###Spin Hall effect from hybridized 3$d$-4$p$ orbitals|Yong-Chang Lau,Hwachol Lee,Kohji Nakamura,Masamitsu Hayashi###
(1533474, 1533474)
First-principles calculations corroborate our experimental observations andsuggest that the hybridized Co 3d<missing VAR> - Ga 4p<missing VAR> orbitals along R-X in theBrillouin zone is responsible for the intrinsic SHE<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 0.01, ',', 1]

Ga
###Spin Hall effect from hybridized 3$d$-4$p$ orbitals|Yong-Chang Lau,Hwachol Lee,Kohji Nakamura,Masamitsu Hayashi###
(1533481, 1533481)
First-principles calculations corroborate our experimental observations andsuggest that the hybridized Co 3d<missing VAR> - Ga 4p<missing VAR> orbitals along R-X in theBrillouin zone is responsible for the intrinsic SHE<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 0.01, ',', 1]

SH
###Spin Hall effect from hybridized 3$d$-4$p$ orbitals|Yong-Chang Lau,Hwachol Lee,Kohji Nakamura,Masamitsu Hayashi###
(1533513, 1533514)
First-principles calculations corroborate our experimental observations andsuggest that the hybridized Co 3d<missing VAR> - Ga 4p<missing VAR> orbitals along R-X in theBrillouin zone is responsible for the intrinsic SHE<missing VAR>.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 0.01, ',', 1]

Y3Fe5O12CoOCo
###Ferroic collinear multilayer magnon spin valve|Joel Cramer,Felix Fuhrmann,Ulrike Ritzmann,Vanessa Gall,Tomohiko Niizeki,Rafael Ramos,Zhiyong Qiu,Dazhi Hou,Takashi Kikkawa,Jairo Sinova,Ulrich Nowak,Eiji Saitoh,Mathias Kläui###
(1533849, 1533857)
 We find in Y3Fe5O12CoOCotri-layers that the detected spin signal depends on the relative alignment ofY3Fe5O12 and Co.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5652173913043478,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.21739130434782608,0.08695652173913043,0,0,0,0,0,0,0,0,0,0,0,0.13043478260869565,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 120, '%', 1]

Y3Fe5O12
###Ferroic collinear multilayer magnon spin valve|Joel Cramer,Felix Fuhrmann,Ulrike Ritzmann,Vanessa Gall,Tomohiko Niizeki,Rafael Ramos,Zhiyong Qiu,Dazhi Hou,Takashi Kikkawa,Jairo Sinova,Ulrich Nowak,Eiji Saitoh,Mathias Kläui###
(1533887, 1533892)
 We find in Y3Fe5O12CoOCotri-layers that the detected spin signal depends on the relative alignment ofY3Fe5O12 and Co.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 120, '%', 1]

Co
###Ferroic collinear multilayer magnon spin valve|Joel Cramer,Felix Fuhrmann,Ulrike Ritzmann,Vanessa Gall,Tomohiko Niizeki,Rafael Ramos,Zhiyong Qiu,Dazhi Hou,Takashi Kikkawa,Jairo Sinova,Ulrich Nowak,Eiji Saitoh,Mathias Kläui###
(1533896, 1533896)
 We find in Y3Fe5O12CoOCotri-layers that the detected spin signal depends on the relative alignment ofY3Fe5O12 and Co.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 120, '%', 1]

(BCs)
###Boundary-Driven Twist States in Systems with Broken Spatial Inversion Symmetry|Kjetil M. D. Hals,Karin Everschor-Sitte###
(1534073, 1534076)
 A full description of a magnetic sample includes a correct treatment of theboundary conditions (BCs).
Featurization successful!
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BCs
###Boundary-Driven Twist States in Systems with Broken Spatial Inversion Symmetry|Kjetil M. D. Hals,Karin Everschor-Sitte###
(1534162, 1534163)
 We study generic ferromagnets with broken spatialinversion symmetry and derive the general micromagnetic BCs of a system withDzyaloshinskii-Moriya interaction (DMI).
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Boundary-Driven Twist States in Systems with Broken Spatial Inversion Symmetry|Kjetil M. D. Hals,Karin Everschor-Sitte###
(1534183, 1534183)
 We study generic ferromagnets with broken spatialinversion symmetry and derive the general micromagnetic BCs of a system withDzyaloshinskii-Moriya interaction (DMI).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BCs
###Boundary-Driven Twist States in Systems with Broken Spatial Inversion Symmetry|Kjetil M. D. Hals,Karin Everschor-Sitte###
(1534195, 1534196)
 We demonstrate that the BCs requirethe full tensorial structure of the third-rank DMI tensor and not just theantisymmetric part, which is usually taken into account.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Boundary-Driven Twist States in Systems with Broken Spatial Inversion Symmetry|Kjetil M. D. Hals,Karin Everschor-Sitte###
(1534219, 1534219)
 We demonstrate that the BCs requirethe full tensorial structure of the third-rank DMI tensor and not just theantisymmetric part, which is usually taken into account.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Boundary-Driven Twist States in Systems with Broken Spatial Inversion Symmetry|Kjetil M. D. Hals,Karin Everschor-Sitte###
(1534262, 1534262)
 Specifically, we studysystems with Cinfty v<missing VAR> symmetry and explore the consequences of the DMI.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Boundary-Driven Twist States in Systems with Broken Spatial Inversion Symmetry|Kjetil M. D. Hals,Karin Everschor-Sitte###
(1534283, 1534283)
 Specifically, we studysystems with Cinfty v<missing VAR> symmetry and explore the consequences of the DMI.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Boundary-Driven Twist States in Systems with Broken Spatial Inversion Symmetry|Kjetil M. D. Hals,Karin Everschor-Sitte###
(1534300, 1534300)
Interestingly, we find that the DMI already in the simplest case of aferromagnetic thin-film leads to a purely boundary-driven magnetic twist stateat the edges of the sample.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Boundary-Driven Twist States in Systems with Broken Spatial Inversion Symmetry|Kjetil M. D. Hals,Karin Everschor-Sitte###
(1534374, 1534374)
 The twist state represents a new type ofDMI-induced spin structure, which is completely independent of the internal DMIfield.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Boundary-Driven Twist States in Systems with Broken Spatial Inversion Symmetry|Kjetil M. D. Hals,Karin Everschor-Sitte###
(1534399, 1534399)
 The twist state represents a new type ofDMI-induced spin structure, which is completely independent of the internal DMIfield.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoP2
###Magnetotransport properties of MoP$_2$|Aifeng Wang,D. Graf,Yu Liu,C. Petrovic###
(1534459, 1534461)
Magnetotransport properties of MoP2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoP2
###Magnetotransport properties of MoP$_2$|Aifeng Wang,D. Graf,Yu Liu,C. Petrovic###
(1534493, 1534495)
 We report magnetotransport and de Haas-van Alphen (d<missing VAR>HvA) effect studies onMoP2 single crystals, predicted to be type-2 Weyl semimetal with four pairsof robust Weyl points located below the Fermi level and long Fermi arcs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B2
###Magnetotransport properties of MoP$_2$|Aifeng Wang,D. Graf,Yu Liu,C. Petrovic###
(1534633, 1534634)
 Large nonsaturating magnetoresistance (MR)was observed, and the field dependence of MR exhibits a crossover fromsemicalssical weak-field B2 dependence to the high-field linear-fielddependence, indicating the presence of Dirac linear energy dispersion.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magnetotransport properties of MoP$_2$|Aifeng Wang,D. Graf,Yu Liu,C. Petrovic###
(1534671, 1534671)
 Inaddition, systematic violation of Kohlers<missing VAR> rule was observed, consistent withmultiband electronic transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(SOC)
###Magnetotransport properties of MoP$_2$|Aifeng Wang,D. Graf,Yu Liu,C. Petrovic###
(1534713, 1534717)
 Strong spin-orbit coupling (SOC) splitting hasan effect on d<missing VAR>HvA measurements whereas the angular-dependent d<missing VAR>HvA orbitfrequencies agree well with the calculated Fermi surface.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoP2
###Magnetotransport properties of MoP$_2$|Aifeng Wang,D. Graf,Yu Liu,C. Petrovic###
(1534855, 1534857)
 Interestingly,quasi-two dimensional(2D) band structure is observed even though the crystalstructure of MoP2 is not layered.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SnSe
###Defects controlled hole doping and multi-valley transport in SnSe single crystals|Zhen Wang,Congcong Fan,Zhixuan Shen,Chenqiang Hua,Yifeng Hu,Feng Sheng,Yunhao Lu,Hanyan Fang,Zhizhan Qiu,Jiong Lu,Zhu-An Xu,D. W. Shen,Yi Zheng###
(1534892, 1534893)
Defects controlled hole doping and multi-valley transport in SnSe single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SnSe
###Defects controlled hole doping and multi-valley transport in SnSe single crystals|Zhen Wang,Congcong Fan,Zhixuan Shen,Chenqiang Hua,Yifeng Hu,Feng Sheng,Yunhao Lu,Hanyan Fang,Zhizhan Qiu,Jiong Lu,Zhu-An Xu,D. W. Shen,Yi Zheng###
(1534900, 1534901)
 SnSe is a promising thermoelectric material with record-breaking figure ofmerit, textiti.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Defects controlled hole doping and multi-valley transport in SnSe single crystals|Zhen Wang,Congcong Fan,Zhixuan Shen,Chenqiang Hua,Yifeng Hu,Feng Sheng,Yunhao Lu,Hanyan Fang,Zhizhan Qiu,Jiong Lu,Zhu-An Xu,D. W. Shen,Yi Zheng###
(1534938, 1534938)
 As a semiconductor, optimal electrical dosage is thekey challenge to maximize textitZT in SnSe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SnSe
###Defects controlled hole doping and multi-valley transport in SnSe single crystals|Zhen Wang,Congcong Fan,Zhixuan Shen,Chenqiang Hua,Yifeng Hu,Feng Sheng,Yunhao Lu,Hanyan Fang,Zhizhan Qiu,Jiong Lu,Zhu-An Xu,D. W. Shen,Yi Zheng###
(1534970, 1534971)
 As a semiconductor, optimal electrical dosage is thekey challenge to maximize textitZT in SnSe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SnSe
###Defects controlled hole doping and multi-valley transport in SnSe single crystals|Zhen Wang,Congcong Fan,Zhixuan Shen,Chenqiang Hua,Yifeng Hu,Feng Sheng,Yunhao Lu,Hanyan Fang,Zhizhan Qiu,Jiong Lu,Zhu-An Xu,D. W. Shen,Yi Zheng###
(1535016, 1535017)
 However, to date a comprehensiveunderstanding of the electronic structure and most critically, the self-holedoping mechanism in SnSe is still absent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SnSe
###Defects controlled hole doping and multi-valley transport in SnSe single crystals|Zhen Wang,Congcong Fan,Zhixuan Shen,Chenqiang Hua,Yifeng Hu,Feng Sheng,Yunhao Lu,Hanyan Fang,Zhizhan Qiu,Jiong Lu,Zhu-An Xu,D. W. Shen,Yi Zheng###
(1535046, 1535047)
 Here, we report the highlyanisotropic electronic structure of SnSe investigated by both angle-resolvedphotoemission spectroscopy and quantum transport, in which a uniquetextitpudding-mold shaped valence band with quasi-linear energy dispersionis revealed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SnSe
###Defects controlled hole doping and multi-valley transport in SnSe single crystals|Zhen Wang,Congcong Fan,Zhixuan Shen,Chenqiang Hua,Yifeng Hu,Feng Sheng,Yunhao Lu,Hanyan Fang,Zhizhan Qiu,Jiong Lu,Zhu-An Xu,D. W. Shen,Yi Zheng###
(1535121, 1535122)
 We prove that the electrical doping in SnSe is extrinsicallycontrolled by the formation of SnSe2 micro-domains induced by local phasesegregation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SnSe2
###Defects controlled hole doping and multi-valley transport in SnSe single crystals|Zhen Wang,Congcong Fan,Zhixuan Shen,Chenqiang Hua,Yifeng Hu,Feng Sheng,Yunhao Lu,Hanyan Fang,Zhizhan Qiu,Jiong Lu,Zhu-An Xu,D. W. Shen,Yi Zheng###
(1535139, 1535141)
 We prove that the electrical doping in SnSe is extrinsicallycontrolled by the formation of SnSe2 micro-domains induced by local phasesegregation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SnSe
###Defects controlled hole doping and multi-valley transport in SnSe single crystals|Zhen Wang,Congcong Fan,Zhixuan Shen,Chenqiang Hua,Yifeng Hu,Feng Sheng,Yunhao Lu,Hanyan Fang,Zhizhan Qiu,Jiong Lu,Zhu-An Xu,D. W. Shen,Yi Zheng###
(1535191, 1535192)
 Using different growth methods and conditions, we have achievedwide tuning of hole doping in SnSe, ranging from intrinsic semiconductingbehaviour to typical metal with carrier density of 1.23times 1018cm-3 at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SnSe
###Defects controlled hole doping and multi-valley transport in SnSe single crystals|Zhen Wang,Congcong Fan,Zhixuan Shen,Chenqiang Hua,Yifeng Hu,Feng Sheng,Yunhao Lu,Hanyan Fang,Zhizhan Qiu,Jiong Lu,Zhu-An Xu,D. W. Shen,Yi Zheng###
(1535252, 1535253)
 The resulting multi-valley transport in p<missing VAR>-SnSeis characterized by non-saturating weak localization along the armchair axis,due to strong intervalley scattering enhanced by in-plane ferroelectric dipolefield of the puckering lattice.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SnSe
###Defects controlled hole doping and multi-valley transport in SnSe single crystals|Zhen Wang,Congcong Fan,Zhixuan Shen,Chenqiang Hua,Yifeng Hu,Feng Sheng,Yunhao Lu,Hanyan Fang,Zhizhan Qiu,Jiong Lu,Zhu-An Xu,D. W. Shen,Yi Zheng###
(1535351, 1535352)
 Strikingly, quantum oscillations ofmagnetoresistance reveal three-dimensional electronic structure with unusualinterlayer coupling strength in p<missing VAR>-SnSe, which is correlated to theinterweaving of SnSe individual layers by unique point dislocation defects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SnSe
###Defects controlled hole doping and multi-valley transport in SnSe single crystals|Zhen Wang,Congcong Fan,Zhixuan Shen,Chenqiang Hua,Yifeng Hu,Feng Sheng,Yunhao Lu,Hanyan Fang,Zhizhan Qiu,Jiong Lu,Zhu-An Xu,D. W. Shen,Yi Zheng###
(1535370, 1535371)
 Strikingly, quantum oscillations ofmagnetoresistance reveal three-dimensional electronic structure with unusualinterlayer coupling strength in p<missing VAR>-SnSe, which is correlated to theinterweaving of SnSe individual layers by unique point dislocation defects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SnSe
###Defects controlled hole doping and multi-valley transport in SnSe single crystals|Zhen Wang,Congcong Fan,Zhixuan Shen,Chenqiang Hua,Yifeng Hu,Feng Sheng,Yunhao Lu,Hanyan Fang,Zhizhan Qiu,Jiong Lu,Zhu-An Xu,D. W. Shen,Yi Zheng###
(1535424, 1535425)
 Ourresults suggest that defect engineering may provide versatile routes inimproving the thermoelectric performance of the SnSe family.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PdSn4
###Enhanced electron correlations in the new binary stannide PdSn4: a homologue of the Dirac nodal arc semimetal PtSn4|C. Q. Xu,W. Zhou,R. Sankar,X. Z. Xing,Z. X. Shi,Z. D. Han,B. Qian,J. H. Wang,Zengwei Zhu,J. L. Zhang,A. F. Bangura,N. E. Hussey,Xiaofeng Xu###
(1535454, 1535456)
Enhanced electron correlations in the new binary stannide PdSn4 a homologue of the Dirac nodal arc semimetal PtSn4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[341.0, 55, 'Tesla', 5]

PtSn4
###Enhanced electron correlations in the new binary stannide PdSn4: a homologue of the Dirac nodal arc semimetal PtSn4|C. Q. Xu,W. Zhou,R. Sankar,X. Z. Xing,Z. X. Shi,Z. D. Han,B. Qian,J. H. Wang,Zengwei Zhu,J. L. Zhang,A. F. Bangura,N. E. Hussey,Xiaofeng Xu###
(1535474, 1535476)
Enhanced electron correlations in the new binary stannide PdSn4 a homologue of the Dirac nodal arc semimetal PtSn4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[321.0, 55, 'Tesla', 5]

In
###Enhanced electron correlations in the new binary stannide PdSn4: a homologue of the Dirac nodal arc semimetal PtSn4|C. Q. Xu,W. Zhou,R. Sankar,X. Z. Xing,Z. X. Shi,Z. D. Han,B. Qian,J. H. Wang,Zengwei Zhu,J. L. Zhang,A. F. Bangura,N. E. Hussey,Xiaofeng Xu###
(1535624, 1535624)
 In spite of this conceptual richness however, material realization ofnodal-line (loop) fermions is rare, with PbTaSe2, ZrSiS and PtSn4 the onlypromising known candidates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 55, 'Tesla', 2]

PbTaSe2
###Enhanced electron correlations in the new binary stannide PdSn4: a homologue of the Dirac nodal arc semimetal PtSn4|C. Q. Xu,W. Zhou,R. Sankar,X. Z. Xing,Z. X. Shi,Z. D. Han,B. Qian,J. H. Wang,Zengwei Zhu,J. L. Zhang,A. F. Bangura,N. E. Hussey,Xiaofeng Xu###
(1535663, 1535666)
 In spite of this conceptual richness however, material realization ofnodal-line (loop) fermions is rare, with PbTaSe2, ZrSiS and PtSn4 the onlypromising known candidates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 55, 'Tesla', 2]

ZrSiS
###Enhanced electron correlations in the new binary stannide PdSn4: a homologue of the Dirac nodal arc semimetal PtSn4|C. Q. Xu,W. Zhou,R. Sankar,X. Z. Xing,Z. X. Shi,Z. D. Han,B. Qian,J. H. Wang,Zengwei Zhu,J. L. Zhang,A. F. Bangura,N. E. Hussey,Xiaofeng Xu###
(1535669, 1535671)
 In spite of this conceptual richness however, material realization ofnodal-line (loop) fermions is rare, with PbTaSe2, ZrSiS and PtSn4 the onlypromising known candidates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 55, 'Tesla', 2]

PtSn4
###Enhanced electron correlations in the new binary stannide PdSn4: a homologue of the Dirac nodal arc semimetal PtSn4|C. Q. Xu,W. Zhou,R. Sankar,X. Z. Xing,Z. X. Shi,Z. D. Han,B. Qian,J. H. Wang,Zengwei Zhu,J. L. Zhang,A. F. Bangura,N. E. Hussey,Xiaofeng Xu###
(1535675, 1535677)
 In spite of this conceptual richness however, material realization ofnodal-line (loop) fermions is rare, with PbTaSe2, ZrSiS and PtSn4 the onlypromising known candidates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 55, 'Tesla', 2]

PdSn4
###Enhanced electron correlations in the new binary stannide PdSn4: a homologue of the Dirac nodal arc semimetal PtSn4|C. Q. Xu,W. Zhou,R. Sankar,X. Z. Xing,Z. X. Shi,Z. D. Han,B. Qian,J. H. Wang,Zengwei Zhu,J. L. Zhang,A. F. Bangura,N. E. Hussey,Xiaofeng Xu###
(1535716, 1535718)
 Here we report the synthesis and physicalproperties of a new compound PdSn4 that is isostructural with PtSn4 yetpossesses quasiparticles with significantly enhanced effective masses.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 55, 'Tesla', 1]

PtSn4
###Enhanced electron correlations in the new binary stannide PdSn4: a homologue of the Dirac nodal arc semimetal PtSn4|C. Q. Xu,W. Zhou,R. Sankar,X. Z. Xing,Z. X. Shi,Z. D. Han,B. Qian,J. H. Wang,Zengwei Zhu,J. L. Zhang,A. F. Bangura,N. E. Hussey,Xiaofeng Xu###
(1535728, 1535730)
 Here we report the synthesis and physicalproperties of a new compound PdSn4 that is isostructural with PtSn4 yetpossesses quasiparticles with significantly enhanced effective masses.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 55, 'Tesla', 1]

In
###Enhanced electron correlations in the new binary stannide PdSn4: a homologue of the Dirac nodal arc semimetal PtSn4|C. Q. Xu,W. Zhou,R. Sankar,X. Z. Xing,Z. X. Shi,Z. D. Han,B. Qian,J. H. Wang,Zengwei Zhu,J. L. Zhang,A. F. Bangura,N. E. Hussey,Xiaofeng Xu###
(1535750, 1535750)
 Inaddition, PdSn4 displays an unusual polar angular magnetoresistance which at acertain field orientation, varies linearly with field up to 55 Tesla.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 55, 'Tesla', 0]

PdSn4
###Enhanced electron correlations in the new binary stannide PdSn4: a homologue of the Dirac nodal arc semimetal PtSn4|C. Q. Xu,W. Zhou,R. Sankar,X. Z. Xing,Z. X. Shi,Z. D. Han,B. Qian,J. H. Wang,Zengwei Zhu,J. L. Zhang,A. F. Bangura,N. E. Hussey,Xiaofeng Xu###
(1535756, 1535758)
 Inaddition, PdSn4 displays an unusual polar angular magnetoresistance which at acertain field orientation, varies linearly with field up to 55 Tesla.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 55, 'Tesla', 0]

PtSn4
###Enhanced electron correlations in the new binary stannide PdSn4: a homologue of the Dirac nodal arc semimetal PtSn4|C. Q. Xu,W. Zhou,R. Sankar,X. Z. Xing,Z. X. Shi,Z. D. Han,B. Qian,J. H. Wang,Zengwei Zhu,J. L. Zhang,A. F. Bangura,N. E. Hussey,Xiaofeng Xu###
(1535820, 1535822)
 Our studysuggests that, in association with its homologue PtSn4 whose low-lyingexcitations were recently claimed to possess Dirac node arcs, PdSn4 may be apromising candidate in the search for novel topological states with enhancedcorrelation effects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 55, 'Tesla', 1]

PdSn4
###Enhanced electron correlations in the new binary stannide PdSn4: a homologue of the Dirac nodal arc semimetal PtSn4|C. Q. Xu,W. Zhou,R. Sankar,X. Z. Xing,Z. X. Shi,Z. D. Han,B. Qian,J. H. Wang,Zengwei Zhu,J. L. Zhang,A. F. Bangura,N. E. Hussey,Xiaofeng Xu###
(1535850, 1535852)
 Our studysuggests that, in association with its homologue PtSn4 whose low-lyingexcitations were recently claimed to possess Dirac node arcs, PdSn4 may be apromising candidate in the search for novel topological states with enhancedcorrelation effects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 55, 'Tesla', 1]

In
###Bending and Breaking of Stripes in a Charge-Ordered Manganite|Benjamin H. Savitzky,Ismail El Baggari,Alemayehu S. Admasu,Jaewook Kim,Sang-Wook Cheong,Robert Hovden,Lena F. Kourkoutis###
(1535918, 1535918)
 In complex electronic materials, coupling between electrons and the atomiclattice gives rise to remarkable phenomena, including colossalmagnetoresistance and metal-insulator transitions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Bending and Breaking of Stripes in a Charge-Ordered Manganite|Benjamin H. Savitzky,Ismail El Baggari,Alemayehu S. Admasu,Jaewook Kim,Sang-Wook Cheong,Robert Hovden,Lena F. Kourkoutis###
(1536013, 1536013)
 Charge-ordered phases are aprototypical manifestation of charge-lattice coupling, in which the atomiclattice undergoes periodic lattice displacements (PL<missing VAR>Ds).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ds
###Bending and Breaking of Stripes in a Charge-Ordered Manganite|Benjamin H. Savitzky,Ismail El Baggari,Alemayehu S. Admasu,Jaewook Kim,Sang-Wook Cheong,Robert Hovden,Lena F. Kourkoutis###
(1536015, 1536015)
 Charge-ordered phases are aprototypical manifestation of charge-lattice coupling, in which the atomiclattice undergoes periodic lattice displacements (PL<missing VAR>Ds).
EXCEPTION 3: IndexError for Ds
P
Abstract does not contain any numbers.

Cr0.68Se
###Anomalous Hall effect in two-dimensional non-collinear antiferromagnetic semiconductor Cr0.68Se|J. Yan,X. Luo,F. C. Chen,Q. L. Pei,G. T. Lin,Y. Y. Han,L. Hu,P. Tong,W. H. Song,X. B. Zhu,Y. P. Sun###
(1536325, 1536327)
Anomalous Hall effect in two-dimensional non-collinear antiferromagnetic semiconductor Cr0.68Se.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.40476190476190477,0,0,0,0,0,0,0,0,0,0.5952380952380952,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 42, 'K', 2],[225.0, 83.7, '%', 2],[233.0, 8.5, 'T', 2],[249.0, 0.385, 'cm', 3],[279.0, 1, 'ohm', 3]

Cr0.68Se
###Anomalous Hall effect in two-dimensional non-collinear antiferromagnetic semiconductor Cr0.68Se|J. Yan,X. Luo,F. C. Chen,Q. L. Pei,G. T. Lin,Y. Y. Han,L. Hu,P. Tong,W. H. Song,X. B. Zhu,Y. P. Sun###
(1536330, 1536332)
 Cr0.68Se single crystals with two-dimensional (2D) character have been grown,and the detailed magnetization M(T), electrical transport properties (includinglongitudinal resistivity and Hall resistivity and thermal transport ones(including heat capacity Cp(T) and thermoelectric power (TEP) S(T)) have beenmeasured.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.40476190476190477,0,0,0,0,0,0,0,0,0,0.5952380952380952,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[159.0, 42, 'K', 1],[220.0, 83.7, '%', 1],[228.0, 8.5, 'T', 1],[244.0, 0.385, 'cm', 2],[274.0, 1, 'ohm', 2]

P
###Anomalous Hall effect in two-dimensional non-collinear antiferromagnetic semiconductor Cr0.68Se|J. Yan,X. Luo,F. C. Chen,Q. L. Pei,G. T. Lin,Y. Y. Han,L. Hu,P. Tong,W. H. Song,X. B. Zhu,Y. P. Sun###
(1536423, 1536423)
 Cr0.68Se single crystals with two-dimensional (2D) character have been grown,and the detailed magnetization M(T), electrical transport properties (includinglongitudinal resistivity and Hall resistivity and thermal transport ones(including heat capacity Cp(T) and thermoelectric power (TEP) S(T)) have beenmeasured.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 42, 'K', 1],[129.0, 83.7, '%', 1],[137.0, 8.5, 'T', 1],[153.0, 0.385, 'cm', 2],[183.0, 1, 'ohm', 2]

S
###Anomalous Hall effect in two-dimensional non-collinear antiferromagnetic semiconductor Cr0.68Se|J. Yan,X. Luo,F. C. Chen,Q. L. Pei,G. T. Lin,Y. Y. Han,L. Hu,P. Tong,W. H. Song,X. B. Zhu,Y. P. Sun###
(1536426, 1536426)
 Cr0.68Se single crystals with two-dimensional (2D) character have been grown,and the detailed magnetization M(T), electrical transport properties (includinglongitudinal resistivity and Hall resistivity and thermal transport ones(including heat capacity Cp(T) and thermoelectric power (TEP) S(T)) have beenmeasured.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 42, 'K', 1],[126.0, 83.7, '%', 1],[134.0, 8.5, 'T', 1],[150.0, 0.385, 'cm', 2],[180.0, 1, 'ohm', 2]

Cr0.68Se
###Anomalous Hall effect in two-dimensional non-collinear antiferromagnetic semiconductor Cr0.68Se|J. Yan,X. Luo,F. C. Chen,Q. L. Pei,G. T. Lin,Y. Y. Han,L. Hu,P. Tong,W. H. Song,X. B. Zhu,Y. P. Sun###
(1536454, 1536456)
 There are some interesting phenomena (i) Cr0.68Se presents anon-collinear antiferromagnetic (AFM) semiconducting behavior with the Neeltemperature T<missing VAR>N  42 K and the activated energy Eg3.9 meV; (ii) It exhibits theanomalous Hall effect (AHE) below T<missing VAR>N and large negative magnetoresistance (MR)about 83.7% (2 K, 8.5 T).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.40476190476190477,0,0,0,0,0,0,0,0,0,0.5952380952380952,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 42, 'K', 0],[96.0, 83.7, '%', 0],[104.0, 8.5, 'T', 0],[120.0, 0.385, 'cm', 1],[150.0, 1, 'ohm', 1]

F
###Anomalous Hall effect in two-dimensional non-collinear antiferromagnetic semiconductor Cr0.68Se|J. Yan,X. Luo,F. C. Chen,Q. L. Pei,G. T. Lin,Y. Y. Han,L. Hu,P. Tong,W. H. Song,X. B. Zhu,Y. P. Sun###
(1536471, 1536471)
 There are some interesting phenomena (i) Cr0.68Se presents anon-collinear antiferromagnetic (AFM) semiconducting behavior with the Neeltemperature T<missing VAR>N  42 K and the activated energy Eg3.9 meV; (ii) It exhibits theanomalous Hall effect (AHE) below T<missing VAR>N and large negative magnetoresistance (MR)about 83.7% (2 K, 8.5 T).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 42, 'K', 0],[81.0, 83.7, '%', 0],[89.0, 8.5, 'T', 0],[105.0, 0.385, 'cm', 1],[135.0, 1, 'ohm', 1]

N
###Anomalous Hall effect in two-dimensional non-collinear antiferromagnetic semiconductor Cr0.68Se|J. Yan,X. Luo,F. C. Chen,Q. L. Pei,G. T. Lin,Y. Y. Han,L. Hu,P. Tong,W. H. Song,X. B. Zhu,Y. P. Sun###
(1536489, 1536489)
 There are some interesting phenomena (i) Cr0.68Se presents anon-collinear antiferromagnetic (AFM) semiconducting behavior with the Neeltemperature T<missing VAR>N  42 K and the activated energy Eg3.9 meV; (ii) It exhibits theanomalous Hall effect (AHE) below T<missing VAR>N and large negative magnetoresistance (MR)about 83.7% (2 K, 8.5 T).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 42, 'K', 0],[63.0, 83.7, '%', 0],[71.0, 8.5, 'T', 0],[87.0, 0.385, 'cm', 1],[117.0, 1, 'ohm', 1]

V
###Anomalous Hall effect in two-dimensional non-collinear antiferromagnetic semiconductor Cr0.68Se|J. Yan,X. Luo,F. C. Chen,Q. L. Pei,G. T. Lin,Y. Y. Han,L. Hu,P. Tong,W. H. Song,X. B. Zhu,Y. P. Sun###
(1536505, 1536505)
 There are some interesting phenomena (i) Cr0.68Se presents anon-collinear antiferromagnetic (AFM) semiconducting behavior with the Neeltemperature T<missing VAR>N  42 K and the activated energy Eg3.9 meV; (ii) It exhibits theanomalous Hall effect (AHE) below T<missing VAR>N and large negative magnetoresistance (MR)about 83.7% (2 K, 8.5 T).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 42, 'K', 0],[47.0, 83.7, '%', 0],[55.0, 8.5, 'T', 0],[71.0, 0.385, 'cm', 1],[101.0, 1, 'ohm', 1]

H
###Anomalous Hall effect in two-dimensional non-collinear antiferromagnetic semiconductor Cr0.68Se|J. Yan,X. Luo,F. C. Chen,Q. L. Pei,G. T. Lin,Y. Y. Han,L. Hu,P. Tong,W. H. Song,X. B. Zhu,Y. P. Sun###
(1536527, 1536527)
 There are some interesting phenomena (i) Cr0.68Se presents anon-collinear antiferromagnetic (AFM) semiconducting behavior with the Neeltemperature T<missing VAR>N  42 K and the activated energy Eg3.9 meV; (ii) It exhibits theanomalous Hall effect (AHE) below T<missing VAR>N and large negative magnetoresistance (MR)about 83.7% (2 K, 8.5 T).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 42, 'K', 0],[25.0, 83.7, '%', 0],[33.0, 8.5, 'T', 0],[49.0, 0.385, 'cm', 1],[79.0, 1, 'ohm', 1]

N
###Anomalous Hall effect in two-dimensional non-collinear antiferromagnetic semiconductor Cr0.68Se|J. Yan,X. Luo,F. C. Chen,Q. L. Pei,G. T. Lin,Y. Y. Han,L. Hu,P. Tong,W. H. Song,X. B. Zhu,Y. P. Sun###
(1536534, 1536534)
 There are some interesting phenomena (i) Cr0.68Se presents anon-collinear antiferromagnetic (AFM) semiconducting behavior with the Neeltemperature T<missing VAR>N  42 K and the activated energy Eg3.9 meV; (ii) It exhibits theanomalous Hall effect (AHE) below T<missing VAR>N and large negative magnetoresistance (MR)about 83.7% (2 K, 8.5 T).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 42, 'K', 0],[18.0, 83.7, '%', 0],[26.0, 8.5, 'T', 0],[42.0, 0.385, 'cm', 1],[72.0, 1, 'ohm', 1]

K
###Anomalous Hall effect in two-dimensional non-collinear antiferromagnetic semiconductor Cr0.68Se|J. Yan,X. Luo,F. C. Chen,Q. L. Pei,G. T. Lin,Y. Y. Han,L. Hu,P. Tong,W. H. Song,X. B. Zhu,Y. P. Sun###
(1536558, 1536558)
 There are some interesting phenomena (i) Cr0.68Se presents anon-collinear antiferromagnetic (AFM) semiconducting behavior with the Neeltemperature T<missing VAR>N  42 K and the activated energy Eg3.9 meV; (ii) It exhibits theanomalous Hall effect (AHE) below T<missing VAR>N and large negative magnetoresistance (MR)about 83.7% (2 K, 8.5 T).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 42, 'K', 0],[6.0, 83.7, '%', 0],[2.0, 8.5, 'T', 0],[18.0, 0.385, 'cm', 1],[48.0, 1, 'ohm', 1]

H
###Anomalous Hall effect in two-dimensional non-collinear antiferromagnetic semiconductor Cr0.68Se|J. Yan,X. Luo,F. C. Chen,Q. L. Pei,G. T. Lin,Y. Y. Han,L. Hu,P. Tong,W. H. Song,X. B. Zhu,Y. P. Sun###
(1536567, 1536567)
 The AHE<missing VAR> coefficient R<missing VAR>S is 0.385 cm-3/C at T<missing VAR>2 K andthe AHE<missing VAR> conductivity sigmaH is about 1 ohm-1cm-1 at T<missing VAR>40 K, respectively;(iii) The scaling behavior between the anomalous Hall resistivity and thelongitudinal resistivity is linear and further analysis implies that the originof the AHE<missing VAR> in Cr0.68Se is dominated by the skew-scattering mechanism.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 42, 'K', 1],[15.0, 83.7, '%', 1],[7.0, 8.5, 'T', 1],[9.0, 0.385, 'cm', 0],[39.0, 1, 'ohm', 0]

S
###Anomalous Hall effect in two-dimensional non-collinear antiferromagnetic semiconductor Cr0.68Se|J. Yan,X. Luo,F. C. Chen,Q. L. Pei,G. T. Lin,Y. Y. Han,L. Hu,P. Tong,W. H. Song,X. B. Zhu,Y. P. Sun###
(1536573, 1536573)
 The AHE<missing VAR> coefficient R<missing VAR>S is 0.385 cm-3/C at T<missing VAR>2 K andthe AHE<missing VAR> conductivity sigmaH is about 1 ohm-1cm-1 at T<missing VAR>40 K, respectively;(iii) The scaling behavior between the anomalous Hall resistivity and thelongitudinal resistivity is linear and further analysis implies that the originof the AHE<missing VAR> in Cr0.68Se is dominated by the skew-scattering mechanism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 42, 'K', 1],[21.0, 83.7, '%', 1],[13.0, 8.5, 'T', 1],[3.0, 0.385, 'cm', 0],[33.0, 1, 'ohm', 0]

C
###Anomalous Hall effect in two-dimensional non-collinear antiferromagnetic semiconductor Cr0.68Se|J. Yan,X. Luo,F. C. Chen,Q. L. Pei,G. T. Lin,Y. Y. Han,L. Hu,P. Tong,W. H. Song,X. B. Zhu,Y. P. Sun###
(1536580, 1536580)
 The AHE<missing VAR> coefficient R<missing VAR>S is 0.385 cm-3/C at T<missing VAR>2 K andthe AHE<missing VAR> conductivity sigmaH is about 1 ohm-1cm-1 at T<missing VAR>40 K, respectively;(iii) The scaling behavior between the anomalous Hall resistivity and thelongitudinal resistivity is linear and further analysis implies that the originof the AHE<missing VAR> in Cr0.68Se is dominated by the skew-scattering mechanism.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 42, 'K', 1],[28.0, 83.7, '%', 1],[20.0, 8.5, 'T', 1],[4.0, 0.385, 'cm', 0],[26.0, 1, 'ohm', 0]

K
###Anomalous Hall effect in two-dimensional non-collinear antiferromagnetic semiconductor Cr0.68Se|J. Yan,X. Luo,F. C. Chen,Q. L. Pei,G. T. Lin,Y. Y. Han,L. Hu,P. Tong,W. H. Song,X. B. Zhu,Y. P. Sun###
(1536587, 1536587)
 The AHE<missing VAR> coefficient R<missing VAR>S is 0.385 cm-3/C at T<missing VAR>2 K andthe AHE<missing VAR> conductivity sigmaH is about 1 ohm-1cm-1 at T<missing VAR>40 K, respectively;(iii) The scaling behavior between the anomalous Hall resistivity and thelongitudinal resistivity is linear and further analysis implies that the originof the AHE<missing VAR> in Cr0.68Se is dominated by the skew-scattering mechanism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 42, 'K', 1],[35.0, 83.7, '%', 1],[27.0, 8.5, 'T', 1],[11.0, 0.385, 'cm', 0],[19.0, 1, 'ohm', 0]

H
###Anomalous Hall effect in two-dimensional non-collinear antiferromagnetic semiconductor Cr0.68Se|J. Yan,X. Luo,F. C. Chen,Q. L. Pei,G. T. Lin,Y. Y. Han,L. Hu,P. Tong,W. H. Song,X. B. Zhu,Y. P. Sun###
(1536595, 1536595)
 The AHE<missing VAR> coefficient R<missing VAR>S is 0.385 cm-3/C at T<missing VAR>2 K andthe AHE<missing VAR> conductivity sigmaH is about 1 ohm-1cm-1 at T<missing VAR>40 K, respectively;(iii) The scaling behavior between the anomalous Hall resistivity and thelongitudinal resistivity is linear and further analysis implies that the originof the AHE<missing VAR> in Cr0.68Se is dominated by the skew-scattering mechanism.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 42, 'K', 1],[43.0, 83.7, '%', 1],[35.0, 8.5, 'T', 1],[19.0, 0.385, 'cm', 0],[11.0, 1, 'ohm', 0]

H
###Anomalous Hall effect in two-dimensional non-collinear antiferromagnetic semiconductor Cr0.68Se|J. Yan,X. Luo,F. C. Chen,Q. L. Pei,G. T. Lin,Y. Y. Han,L. Hu,P. Tong,W. H. Song,X. B. Zhu,Y. P. Sun###
(1536601, 1536601)
 The AHE<missing VAR> coefficient R<missing VAR>S is 0.385 cm-3/C at T<missing VAR>2 K andthe AHE<missing VAR> conductivity sigmaH is about 1 ohm-1cm-1 at T<missing VAR>40 K, respectively;(iii) The scaling behavior between the anomalous Hall resistivity and thelongitudinal resistivity is linear and further analysis implies that the originof the AHE<missing VAR> in Cr0.68Se is dominated by the skew-scattering mechanism.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 42, 'K', 1],[49.0, 83.7, '%', 1],[41.0, 8.5, 'T', 1],[25.0, 0.385, 'cm', 0],[5.0, 1, 'ohm', 0]

K
###Anomalous Hall effect in two-dimensional non-collinear antiferromagnetic semiconductor Cr0.68Se|J. Yan,X. Luo,F. C. Chen,Q. L. Pei,G. T. Lin,Y. Y. Han,L. Hu,P. Tong,W. H. Song,X. B. Zhu,Y. P. Sun###
(1536618, 1536618)
 The AHE<missing VAR> coefficient R<missing VAR>S is 0.385 cm-3/C at T<missing VAR>2 K andthe AHE<missing VAR> conductivity sigmaH is about 1 ohm-1cm-1 at T<missing VAR>40 K, respectively;(iii) The scaling behavior between the anomalous Hall resistivity and thelongitudinal resistivity is linear and further analysis implies that the originof the AHE<missing VAR> in Cr0.68Se is dominated by the skew-scattering mechanism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 42, 'K', 1],[66.0, 83.7, '%', 1],[58.0, 8.5, 'T', 1],[42.0, 0.385, 'cm', 0],[12.0, 1, 'ohm', 0]

H
###Anomalous Hall effect in two-dimensional non-collinear antiferromagnetic semiconductor Cr0.68Se|J. Yan,X. Luo,F. C. Chen,Q. L. Pei,G. T. Lin,Y. Y. Han,L. Hu,P. Tong,W. H. Song,X. B. Zhu,Y. P. Sun###
(1536678, 1536678)
 The AHE<missing VAR> coefficient R<missing VAR>S is 0.385 cm-3/C at T<missing VAR>2 K andthe AHE<missing VAR> conductivity sigmaH is about 1 ohm-1cm-1 at T<missing VAR>40 K, respectively;(iii) The scaling behavior between the anomalous Hall resistivity and thelongitudinal resistivity is linear and further analysis implies that the originof the AHE<missing VAR> in Cr0.68Se is dominated by the skew-scattering mechanism.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[187.0, 42, 'K', 1],[126.0, 83.7, '%', 1],[118.0, 8.5, 'T', 1],[102.0, 0.385, 'cm', 0],[72.0, 1, 'ohm', 0]

Cr0.68Se
###Anomalous Hall effect in two-dimensional non-collinear antiferromagnetic semiconductor Cr0.68Se|J. Yan,X. Luo,F. C. Chen,Q. L. Pei,G. T. Lin,Y. Y. Han,L. Hu,P. Tong,W. H. Song,X. B. Zhu,Y. P. Sun###
(1536683, 1536685)
 The AHE<missing VAR> coefficient R<missing VAR>S is 0.385 cm-3/C at T<missing VAR>2 K andthe AHE<missing VAR> conductivity sigmaH is about 1 ohm-1cm-1 at T<missing VAR>40 K, respectively;(iii) The scaling behavior between the anomalous Hall resistivity and thelongitudinal resistivity is linear and further analysis implies that the originof the AHE<missing VAR> in Cr0.68Se is dominated by the skew-scattering mechanism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.40476190476190477,0,0,0,0,0,0,0,0,0,0.5952380952380952,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[192.0, 42, 'K', 1],[131.0, 83.7, '%', 1],[123.0, 8.5, 'T', 1],[107.0, 0.385, 'cm', 0],[77.0, 1, 'ohm', 0]

F
###Anomalous Hall effect in two-dimensional non-collinear antiferromagnetic semiconductor Cr0.68Se|J. Yan,X. Luo,F. C. Chen,Q. L. Pei,G. T. Lin,Y. Y. Han,L. Hu,P. Tong,W. H. Song,X. B. Zhu,Y. P. Sun###
(1536736, 1536736)
 Ourresults may be helpful for exploring the potential application of these kind of2D<missing VAR> AFM<missing VAR> semiconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[245.0, 42, 'K', 2],[184.0, 83.7, '%', 2],[176.0, 8.5, 'T', 2],[160.0, 0.385, 'cm', 1],[130.0, 1, 'ohm', 1]

MoTe2
###The origin of the turn-on phenomenon in Td-MoTe2|Q. L. Pei,W. J. Meng,X. Luo,H. Y. Lv,F. C. Chen,W. J. Lu,Y. Y. Han,P. Tong,W. H. Song,Y. B. Hou,Q. Y. Lu,Y. P. Sun###
(1536768, 1536770)
The origin of the turn-on phenomenon in Td-MoTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 1.92, 'and', 3],[282.0, 0, ',', 5],[311.0, 7, 'T', 5]

S
###The origin of the turn-on phenomenon in Td-MoTe2|Q. L. Pei,W. J. Meng,X. Luo,H. Y. Lv,F. C. Chen,W. J. Lu,Y. Y. Han,P. Tong,W. H. Song,Y. B. Hou,Q. Y. Lu,Y. P. Sun###
(1536793, 1536793)
 We did the resistivity and scanning tunneling microscope/spectroscopy(STM/ST<missing VAR>S) experiments at different temperatures and magnetic fields toinvestigate the origin of the turn-on (t-o) phenomenon of Td-MoTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 1.92, 'and', 2],[259.0, 0, ',', 4],[288.0, 7, 'T', 4]

S
###The origin of the turn-on phenomenon in Td-MoTe2|Q. L. Pei,W. J. Meng,X. Luo,H. Y. Lv,F. C. Chen,W. J. Lu,Y. Y. Han,P. Tong,W. H. Song,Y. B. Hou,Q. Y. Lu,Y. P. Sun###
(1536797, 1536797)
 We did the resistivity and scanning tunneling microscope/spectroscopy(STM/ST<missing VAR>S) experiments at different temperatures and magnetic fields toinvestigate the origin of the turn-on (t-o) phenomenon of Td-MoTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 1.92, 'and', 2],[255.0, 0, ',', 4],[284.0, 7, 'T', 4]

S
###The origin of the turn-on phenomenon in Td-MoTe2|Q. L. Pei,W. J. Meng,X. Luo,H. Y. Lv,F. C. Chen,W. J. Lu,Y. Y. Han,P. Tong,W. H. Song,Y. B. Hou,Q. Y. Lu,Y. P. Sun###
(1536799, 1536799)
 We did the resistivity and scanning tunneling microscope/spectroscopy(STM/ST<missing VAR>S) experiments at different temperatures and magnetic fields toinvestigate the origin of the turn-on (t-o) phenomenon of Td-MoTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 1.92, 'and', 2],[253.0, 0, ',', 4],[282.0, 7, 'T', 4]

MoTe2
###The origin of the turn-on phenomenon in Td-MoTe2|Q. L. Pei,W. J. Meng,X. Luo,H. Y. Lv,F. C. Chen,W. J. Lu,Y. Y. Han,P. Tong,W. H. Song,Y. B. Hou,Q. Y. Lu,Y. P. Sun###
(1536845, 1536847)
 We did the resistivity and scanning tunneling microscope/spectroscopy(STM/ST<missing VAR>S) experiments at different temperatures and magnetic fields toinvestigate the origin of the turn-on (t-o) phenomenon of Td-MoTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 1.92, 'and', 2],[205.0, 0, ',', 4],[234.0, 7, 'T', 4]

H
###The origin of the turn-on phenomenon in Td-MoTe2|Q. L. Pei,W. J. Meng,X. Luo,H. Y. Lv,F. C. Chen,W. J. Lu,Y. Y. Han,P. Tong,W. H. Song,Y. B. Hou,Q. Y. Lu,Y. P. Sun###
(1536889, 1536889)
 Firstly, magnetoresistance (MR) follows theKohler rule scaling MR - (H/p<missing VAR>0)m<missing VAR> with m<missing VAR> - 1.92 and the t-o temperature T<missing VAR> underdifferent magnetic fields can also be scaled by T<missing VAR> - (H-Hc)u<missing VAR> with u<missing VAR>  1/2.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 1.92, 'and', 0],[163.0, 0, ',', 2],[192.0, 7, 'T', 2]

H
###The origin of the turn-on phenomenon in Td-MoTe2|Q. L. Pei,W. J. Meng,X. Luo,H. Y. Lv,F. C. Chen,W. J. Lu,Y. Y. Han,P. Tong,W. H. Song,Y. B. Hou,Q. Y. Lu,Y. P. Sun###
(1536937, 1536937)
 Firstly, magnetoresistance (MR) follows theKohler rule scaling MR - (H/p<missing VAR>0)m<missing VAR> with m<missing VAR> - 1.92 and the t-o temperature T<missing VAR> underdifferent magnetic fields can also be scaled by T<missing VAR> - (H-Hc)u<missing VAR> with u<missing VAR>  1/2.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 1.92, 'and', 0],[115.0, 0, ',', 2],[144.0, 7, 'T', 2]

MoTe2
###The origin of the turn-on phenomenon in Td-MoTe2|Q. L. Pei,W. J. Meng,X. Luo,H. Y. Lv,F. C. Chen,W. J. Lu,Y. Y. Han,P. Tong,W. H. Song,Y. B. Hou,Q. Y. Lu,Y. P. Sun###
(1537005, 1537007)
Secondly, a combination of compensated electron-hole pockets and a possibleelectronic structure phase transition induced by the temperature have beenvalidated in Td-MoTe2 by the STM/ST<missing VAR>S experiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 1.92, 'and', 1],[45.0, 0, ',', 1],[74.0, 7, 'T', 1]

S
###The origin of the turn-on phenomenon in Td-MoTe2|Q. L. Pei,W. J. Meng,X. Luo,H. Y. Lv,F. C. Chen,W. J. Lu,Y. Y. Han,P. Tong,W. H. Song,Y. B. Hou,Q. Y. Lu,Y. P. Sun###
(1537013, 1537013)
Secondly, a combination of compensated electron-hole pockets and a possibleelectronic structure phase transition induced by the temperature have beenvalidated in Td-MoTe2 by the STM/ST<missing VAR>S experiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 1.92, 'and', 1],[39.0, 0, ',', 1],[68.0, 7, 'T', 1]

S
###The origin of the turn-on phenomenon in Td-MoTe2|Q. L. Pei,W. J. Meng,X. Luo,H. Y. Lv,F. C. Chen,W. J. Lu,Y. Y. Han,P. Tong,W. H. Song,Y. B. Hou,Q. Y. Lu,Y. P. Sun###
(1537017, 1537017)
Secondly, a combination of compensated electron-hole pockets and a possibleelectronic structure phase transition induced by the temperature have beenvalidated in Td-MoTe2 by the STM/ST<missing VAR>S experiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 1.92, 'and', 1],[35.0, 0, ',', 1],[64.0, 7, 'T', 1]

S
###The origin of the turn-on phenomenon in Td-MoTe2|Q. L. Pei,W. J. Meng,X. Luo,H. Y. Lv,F. C. Chen,W. J. Lu,Y. Y. Han,P. Tong,W. H. Song,Y. B. Hou,Q. Y. Lu,Y. P. Sun###
(1537019, 1537019)
Secondly, a combination of compensated electron-hole pockets and a possibleelectronic structure phase transition induced by the temperature have beenvalidated in Td-MoTe2 by the STM/ST<missing VAR>S experiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 1.92, 'and', 1],[33.0, 0, ',', 1],[62.0, 7, 'T', 1]

S
###The origin of the turn-on phenomenon in Td-MoTe2|Q. L. Pei,W. J. Meng,X. Luo,H. Y. Lv,F. C. Chen,W. J. Lu,Y. Y. Han,P. Tong,W. H. Song,Y. B. Hou,Q. Y. Lu,Y. P. Sun###
(1537030, 1537030)
 Compared with the ST<missing VAR>S ofTd-MoTe2 single crystal under H  0, the ST<missing VAR>S hardly changes even when theapplied field is up to 7 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 1.92, 'and', 2],[22.0, 0, ',', 0],[51.0, 7, 'T', 0]

S
###The origin of the turn-on phenomenon in Td-MoTe2|Q. L. Pei,W. J. Meng,X. Luo,H. Y. Lv,F. C. Chen,W. J. Lu,Y. Y. Han,P. Tong,W. H. Song,Y. B. Hou,Q. Y. Lu,Y. P. Sun###
(1537032, 1537032)
 Compared with the ST<missing VAR>S ofTd-MoTe2 single crystal under H  0, the ST<missing VAR>S hardly changes even when theapplied field is up to 7 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 1.92, 'and', 2],[20.0, 0, ',', 0],[49.0, 7, 'T', 0]

MoTe2
###The origin of the turn-on phenomenon in Td-MoTe2|Q. L. Pei,W. J. Meng,X. Luo,H. Y. Lv,F. C. Chen,W. J. Lu,Y. Y. Han,P. Tong,W. H. Song,Y. B. Hou,Q. Y. Lu,Y. P. Sun###
(1537039, 1537041)
 Compared with the ST<missing VAR>S ofTd-MoTe2 single crystal under H  0, the ST<missing VAR>S hardly changes even when theapplied field is up to 7 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 1.92, 'and', 2],[11.0, 0, ',', 0],[40.0, 7, 'T', 0]

H
###The origin of the turn-on phenomenon in Td-MoTe2|Q. L. Pei,W. J. Meng,X. Luo,H. Y. Lv,F. C. Chen,W. J. Lu,Y. Y. Han,P. Tong,W. H. Song,Y. B. Hou,Q. Y. Lu,Y. P. Sun###
(1537049, 1537049)
 Compared with the ST<missing VAR>S ofTd-MoTe2 single crystal under H  0, the ST<missing VAR>S hardly changes even when theapplied field is up to 7 T.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 1.92, 'and', 2],[3.0, 0, ',', 0],[32.0, 7, 'T', 0]

S
###The origin of the turn-on phenomenon in Td-MoTe2|Q. L. Pei,W. J. Meng,X. Luo,H. Y. Lv,F. C. Chen,W. J. Lu,Y. Y. Han,P. Tong,W. H. Song,Y. B. Hou,Q. Y. Lu,Y. P. Sun###
(1537057, 1537057)
 Compared with the ST<missing VAR>S ofTd-MoTe2 single crystal under H  0, the ST<missing VAR>S hardly changes even when theapplied field is up to 7 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 1.92, 'and', 2],[5.0, 0, ',', 0],[24.0, 7, 'T', 0]

S
###The origin of the turn-on phenomenon in Td-MoTe2|Q. L. Pei,W. J. Meng,X. Luo,H. Y. Lv,F. C. Chen,W. J. Lu,Y. Y. Han,P. Tong,W. H. Song,Y. B. Hou,Q. Y. Lu,Y. P. Sun###
(1537059, 1537059)
 Compared with the ST<missing VAR>S ofTd-MoTe2 single crystal under H  0, the ST<missing VAR>S hardly changes even when theapplied field is up to 7 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 1.92, 'and', 2],[7.0, 0, ',', 0],[22.0, 7, 'T', 0]

MoTe2
###The origin of the turn-on phenomenon in Td-MoTe2|Q. L. Pei,W. J. Meng,X. Luo,H. Y. Lv,F. C. Chen,W. J. Lu,Y. Y. Han,P. Tong,W. H. Song,Y. B. Hou,Q. Y. Lu,Y. P. Sun###
(1537102, 1537104)
 The origins of the t-o phenomenon in Td-MoTe2 arediscussed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[201.0, 1.92, 'and', 3],[50.0, 0, ',', 1],[21.0, 7, 'T', 1]

II
###Anomalous Nernst effect in type-II Weyl semimetals|Subhodip Saha,Sumanta Tewari###
(1537218, 1537219)
Anomalous Nernst effect in type-II Weyl semimetals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WS
###Anomalous Nernst effect in type-II Weyl semimetals|Subhodip Saha,Sumanta Tewari###
(1537233, 1537234)
 Topological Weyl semimetals (WSM), a new state of quantum matter with gaplessnodal bulk spectrum and open Fermi arc surface states, have recently sparkedenormous interest in condensed matter physics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WS
###Anomalous Nernst effect in type-II Weyl semimetals|Subhodip Saha,Sumanta Tewari###
(1537319, 1537320)
 Based on the symmetry andfermiology, it has been proposed that WSMs can be broadly classified into twotypes, type-I and type-II Weyl semimetals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Anomalous Nernst effect in type-II Weyl semimetals|Subhodip Saha,Sumanta Tewari###
(1537341, 1537341)
 Based on the symmetry andfermiology, it has been proposed that WSMs can be broadly classified into twotypes, type-I and type-II Weyl semimetals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Anomalous Nernst effect in type-II Weyl semimetals|Subhodip Saha,Sumanta Tewari###
(1537347, 1537348)
 Based on the symmetry andfermiology, it has been proposed that WSMs can be broadly classified into twotypes, type-I and type-II Weyl semimetals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Anomalous Nernst effect in type-II Weyl semimetals|Subhodip Saha,Sumanta Tewari###
(1537368, 1537368)
 While the undoped, conventional,type-I WSMs have point like Fermi surface and vanishing density of states (D<missing VAR>OS)at the Fermi energy, the type-II Weyl semimetals break Lorentz symmetryexplicitly and have tilted conical spectra with electron and hole pocketsproducing finite D<missing VAR>OS at the Fermi level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WS
###Anomalous Nernst effect in type-II Weyl semimetals|Subhodip Saha,Sumanta Tewari###
(1537370, 1537371)
 While the undoped, conventional,type-I WSMs have point like Fermi surface and vanishing density of states (D<missing VAR>OS)at the Fermi energy, the type-II Weyl semimetals break Lorentz symmetryexplicitly and have tilted conical spectra with electron and hole pocketsproducing finite D<missing VAR>OS at the Fermi level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Anomalous Nernst effect in type-II Weyl semimetals|Subhodip Saha,Sumanta Tewari###
(1537397, 1537397)
 While the undoped, conventional,type-I WSMs have point like Fermi surface and vanishing density of states (D<missing VAR>OS)at the Fermi energy, the type-II Weyl semimetals break Lorentz symmetryexplicitly and have tilted conical spectra with electron and hole pocketsproducing finite D<missing VAR>OS at the Fermi level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Anomalous Nernst effect in type-II Weyl semimetals|Subhodip Saha,Sumanta Tewari###
(1537414, 1537415)
 While the undoped, conventional,type-I WSMs have point like Fermi surface and vanishing density of states (D<missing VAR>OS)at the Fermi energy, the type-II Weyl semimetals break Lorentz symmetryexplicitly and have tilted conical spectra with electron and hole pocketsproducing finite D<missing VAR>OS at the Fermi level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OS
###Anomalous Nernst effect in type-II Weyl semimetals|Subhodip Saha,Sumanta Tewari###
(1537456, 1537457)
 While the undoped, conventional,type-I WSMs have point like Fermi surface and vanishing density of states (D<missing VAR>OS)at the Fermi energy, the type-II Weyl semimetals break Lorentz symmetryexplicitly and have tilted conical spectra with electron and hole pocketsproducing finite D<missing VAR>OS at the Fermi level.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OS
###Anomalous Nernst effect in type-II Weyl semimetals|Subhodip Saha,Sumanta Tewari###
(1537482, 1537483)
 The tilted conical spectrum and finiteD<missing VAR>OS at Fermi level in type-II WSMs have recently been shown to produceinteresting effects such as a chiral anomaly induced longitudinalmagnetoresistance that is strongly anisotropic in direction and a novelanomalous Hall effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Anomalous Nernst effect in type-II Weyl semimetals|Subhodip Saha,Sumanta Tewari###
(1537495, 1537496)
 The tilted conical spectrum and finiteD<missing VAR>OS at Fermi level in type-II WSMs have recently been shown to produceinteresting effects such as a chiral anomaly induced longitudinalmagnetoresistance that is strongly anisotropic in direction and a novelanomalous Hall effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WS
###Anomalous Nernst effect in type-II Weyl semimetals|Subhodip Saha,Sumanta Tewari###
(1537498, 1537499)
 The tilted conical spectrum and finiteD<missing VAR>OS at Fermi level in type-II WSMs have recently been shown to produceinteresting effects such as a chiral anomaly induced longitudinalmagnetoresistance that is strongly anisotropic in direction and a novelanomalous Hall effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Anomalous Nernst effect in type-II Weyl semimetals|Subhodip Saha,Sumanta Tewari###
(1537562, 1537562)
 In this work, we consider the anomalous Nernst effect intype-II WSMs in the absence of an external magnetic field using the frameworkof semi-classical Boltzmann theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Anomalous Nernst effect in type-II Weyl semimetals|Subhodip Saha,Sumanta Tewari###
(1537586, 1537587)
 In this work, we consider the anomalous Nernst effect intype-II WSMs in the absence of an external magnetic field using the frameworkof semi-classical Boltzmann theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WS
###Anomalous Nernst effect in type-II Weyl semimetals|Subhodip Saha,Sumanta Tewari###
(1537589, 1537590)
 In this work, we consider the anomalous Nernst effect intype-II WSMs in the absence of an external magnetic field using the frameworkof semi-classical Boltzmann theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WS
###Anomalous Nernst effect in type-II Weyl semimetals|Subhodip Saha,Sumanta Tewari###
(1537648, 1537649)
 Based on both a linearized model oftime-reversal breaking WSM<missing VAR> with a higher energy cut-off and a more realisticlattice model, we show that the anomalous Nernst response in these systems isstrongly anisotropic in space, and can serve as a reliable signature of type-IIWeyl semimetals in a host of magnetic systems with spontaneously broken timereversal symmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Anomalous Nernst effect in type-II Weyl semimetals|Subhodip Saha,Sumanta Tewari###
(1537728, 1537729)
 Based on both a linearized model oftime-reversal breaking WSM<missing VAR> with a higher energy cut-off and a more realisticlattice model, we show that the anomalous Nernst response in these systems isstrongly anisotropic in space, and can serve as a reliable signature of type-IIWeyl semimetals in a host of magnetic systems with spontaneously broken timereversal symmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoAs2
###Observation of Open-Orbit Fermi Surface Topology in Extremely Large Magnetoresistance Semimetal MoAs$_2$|R. Lou,Y. F. Xu,L. -X. Zhao,Z. -Q. Han,P. -J. Guo,M. Li,J. -C. Wang,B. -B. Fu,Z. -H. Liu,Y. -B. Huang,P. Richard,T. Qian,K. Liu,G. -F. Chen,H. M. Weng,H. Ding,S. -C. Wang###
(1537794, 1537796)
Observation of Open-Orbit Fermi Surface Topology in Extremely Large Magnetoresistance Semimetal MoAs2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tm
###Observation of Open-Orbit Fermi Surface Topology in Extremely Large Magnetoresistance Semimetal MoAs$_2$|R. Lou,Y. F. Xu,L. -X. Zhao,Z. -Q. Han,P. -J. Guo,M. Li,J. -C. Wang,B. -B. Fu,Z. -H. Liu,Y. -B. Huang,P. Richard,T. Qian,K. Liu,G. -F. Chen,H. M. Weng,H. Ding,S. -C. Wang###
(1537851, 1537851)
 While recent advances in band theory and sample growth have expanded theseries of extremely large magnetoresistance (XMR) semimetals in transitionmetal dipnictides TmPn2 (Tm  Ta, Nb; Pn  P, As, Sb), the experimentalstudy on their electronic structure and the origin of XMR is still absent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tm
###Observation of Open-Orbit Fermi Surface Topology in Extremely Large Magnetoresistance Semimetal MoAs$_2$|R. Lou,Y. F. Xu,L. -X. Zhao,Z. -Q. Han,P. -J. Guo,M. Li,J. -C. Wang,B. -B. Fu,Z. -H. Liu,Y. -B. Huang,P. Richard,T. Qian,K. Liu,G. -F. Chen,H. M. Weng,H. Ding,S. -C. Wang###
(1537856, 1537856)
 While recent advances in band theory and sample growth have expanded theseries of extremely large magnetoresistance (XMR) semimetals in transitionmetal dipnictides TmPn2 (Tm  Ta, Nb; Pn  P, As, Sb), the experimentalstudy on their electronic structure and the origin of XMR is still absent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ta
###Observation of Open-Orbit Fermi Surface Topology in Extremely Large Magnetoresistance Semimetal MoAs$_2$|R. Lou,Y. F. Xu,L. -X. Zhao,Z. -Q. Han,P. -J. Guo,M. Li,J. -C. Wang,B. -B. Fu,Z. -H. Liu,Y. -B. Huang,P. Richard,T. Qian,K. Liu,G. -F. Chen,H. M. Weng,H. Ding,S. -C. Wang###
(1537859, 1537859)
 While recent advances in band theory and sample growth have expanded theseries of extremely large magnetoresistance (XMR) semimetals in transitionmetal dipnictides TmPn2 (Tm  Ta, Nb; Pn  P, As, Sb), the experimentalstudy on their electronic structure and the origin of XMR is still absent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nb
###Observation of Open-Orbit Fermi Surface Topology in Extremely Large Magnetoresistance Semimetal MoAs$_2$|R. Lou,Y. F. Xu,L. -X. Zhao,Z. -Q. Han,P. -J. Guo,M. Li,J. -C. Wang,B. -B. Fu,Z. -H. Liu,Y. -B. Huang,P. Richard,T. Qian,K. Liu,G. -F. Chen,H. M. Weng,H. Ding,S. -C. Wang###
(1537862, 1537862)
 While recent advances in band theory and sample growth have expanded theseries of extremely large magnetoresistance (XMR) semimetals in transitionmetal dipnictides TmPn2 (Tm  Ta, Nb; Pn  P, As, Sb), the experimentalstudy on their electronic structure and the origin of XMR is still absent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Observation of Open-Orbit Fermi Surface Topology in Extremely Large Magnetoresistance Semimetal MoAs$_2$|R. Lou,Y. F. Xu,L. -X. Zhao,Z. -Q. Han,P. -J. Guo,M. Li,J. -C. Wang,B. -B. Fu,Z. -H. Liu,Y. -B. Huang,P. Richard,T. Qian,K. Liu,G. -F. Chen,H. M. Weng,H. Ding,S. -C. Wang###
(1537868, 1537868)
 While recent advances in band theory and sample growth have expanded theseries of extremely large magnetoresistance (XMR) semimetals in transitionmetal dipnictides TmPn2 (Tm  Ta, Nb; Pn  P, As, Sb), the experimentalstudy on their electronic structure and the origin of XMR is still absent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Observation of Open-Orbit Fermi Surface Topology in Extremely Large Magnetoresistance Semimetal MoAs$_2$|R. Lou,Y. F. Xu,L. -X. Zhao,Z. -Q. Han,P. -J. Guo,M. Li,J. -C. Wang,B. -B. Fu,Z. -H. Liu,Y. -B. Huang,P. Richard,T. Qian,K. Liu,G. -F. Chen,H. M. Weng,H. Ding,S. -C. Wang###
(1537871, 1537871)
 While recent advances in band theory and sample growth have expanded theseries of extremely large magnetoresistance (XMR) semimetals in transitionmetal dipnictides TmPn2 (Tm  Ta, Nb; Pn  P, As, Sb), the experimentalstudy on their electronic structure and the origin of XMR is still absent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sb
###Observation of Open-Orbit Fermi Surface Topology in Extremely Large Magnetoresistance Semimetal MoAs$_2$|R. Lou,Y. F. Xu,L. -X. Zhao,Z. -Q. Han,P. -J. Guo,M. Li,J. -C. Wang,B. -B. Fu,Z. -H. Liu,Y. -B. Huang,P. Richard,T. Qian,K. Liu,G. -F. Chen,H. M. Weng,H. Ding,S. -C. Wang###
(1537874, 1537874)
 While recent advances in band theory and sample growth have expanded theseries of extremely large magnetoresistance (XMR) semimetals in transitionmetal dipnictides TmPn2 (Tm  Ta, Nb; Pn  P, As, Sb), the experimentalstudy on their electronic structure and the origin of XMR is still absent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoAs2
###Observation of Open-Orbit Fermi Surface Topology in Extremely Large Magnetoresistance Semimetal MoAs$_2$|R. Lou,Y. F. Xu,L. -X. Zhao,Z. -Q. Han,P. -J. Guo,M. Li,J. -C. Wang,B. -B. Fu,Z. -H. Liu,Y. -B. Huang,P. Richard,T. Qian,K. Liu,G. -F. Chen,H. M. Weng,H. Ding,S. -C. Wang###
(1537957, 1537959)
Here, using angle-resolved photoemission spectroscopy combined withfirst-principles calculations and magnetotransport measurements, we performed acomprehensive investigation on MoAs2, which is isostructural to the TmPn2family and also exhibits quadratic XMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tm
###Observation of Open-Orbit Fermi Surface Topology in Extremely Large Magnetoresistance Semimetal MoAs$_2$|R. Lou,Y. F. Xu,L. -X. Zhao,Z. -Q. Han,P. -J. Guo,M. Li,J. -C. Wang,B. -B. Fu,Z. -H. Liu,Y. -B. Huang,P. Richard,T. Qian,K. Liu,G. -F. Chen,H. M. Weng,H. Ding,S. -C. Wang###
(1537972, 1537972)
Here, using angle-resolved photoemission spectroscopy combined withfirst-principles calculations and magnetotransport measurements, we performed acomprehensive investigation on MoAs2, which is isostructural to the TmPn2family and also exhibits quadratic XMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Observation of Open-Orbit Fermi Surface Topology in Extremely Large Magnetoresistance Semimetal MoAs$_2$|R. Lou,Y. F. Xu,L. -X. Zhao,Z. -Q. Han,P. -J. Guo,M. Li,J. -C. Wang,B. -B. Fu,Z. -H. Liu,Y. -B. Huang,P. Richard,T. Qian,K. Liu,G. -F. Chen,H. M. Weng,H. Ding,S. -C. Wang###
(1538031, 1538031)
 Intriguingly, the unambiguously observed Fermisurfaces (FSs) are dominated by an open-orbit topology extending along both the[100] and [001] directions in the three-dimensional Brillouin zone.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoAs2
###Observation of Open-Orbit Fermi Surface Topology in Extremely Large Magnetoresistance Semimetal MoAs$_2$|R. Lou,Y. F. Xu,L. -X. Zhao,Z. -Q. Han,P. -J. Guo,M. Li,J. -C. Wang,B. -B. Fu,Z. -H. Liu,Y. -B. Huang,P. Richard,T. Qian,K. Liu,G. -F. Chen,H. M. Weng,H. Ding,S. -C. Wang###
(1538100, 1538102)
 We furtherreveal the trivial topological nature of MoAs2 by bulk parity analysis.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoAs2
###Observation of Open-Orbit Fermi Surface Topology in Extremely Large Magnetoresistance Semimetal MoAs$_2$|R. Lou,Y. F. Xu,L. -X. Zhao,Z. -Q. Han,P. -J. Guo,M. Li,J. -C. Wang,B. -B. Fu,Z. -H. Liu,Y. -B. Huang,P. Richard,T. Qian,K. Liu,G. -F. Chen,H. M. Weng,H. Ding,S. -C. Wang###
(1538165, 1538167)
Based on these results, we examine the proposed XMR mechanisms in othersemimetals, and conclusively ascribe the origin of quadratic XMR in MoAs2 tothe carriers motion on the FSs with dominant open-orbit topology, innovating inthe understanding of quadratic XMR in semimetals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Observation of Open-Orbit Fermi Surface Topology in Extremely Large Magnetoresistance Semimetal MoAs$_2$|R. Lou,Y. F. Xu,L. -X. Zhao,Z. -Q. Han,P. -J. Guo,M. Li,J. -C. Wang,B. -B. Fu,Z. -H. Liu,Y. -B. Huang,P. Richard,T. Qian,K. Liu,G. -F. Chen,H. M. Weng,H. Ding,S. -C. Wang###
(1538182, 1538182)
Based on these results, we examine the proposed XMR mechanisms in othersemimetals, and conclusively ascribe the origin of quadratic XMR in MoAs2 tothe carriers motion on the FSs with dominant open-orbit topology, innovating inthe understanding of quadratic XMR in semimetals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Stabilizing isolated skyrmions at low magnetic fields exploiting vanishing magnetic anisotropy|Marie Hervé,Bertrand Dupé,Rafael Lopes,Marie Böttcher,Maximiliano D. Martins,Timofey Balashov,Lukas Gerhard,Jairo Sinova,Wulf Wulfhekel###
(1538387, 1538387)
 The driving force for skyrmion formation isthe non-collinear Dzyaloshinskii-Moriya exchange interaction (DMI) originatingfrom spin-orbit coupling (SOC).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[197.0, 100, 'mT', 3],[216.0, 4, 'd', 4],[416.0, 5, 'd', 6]

(SOC)
###Stabilizing isolated skyrmions at low magnetic fields exploiting vanishing magnetic anisotropy|Marie Hervé,Bertrand Dupé,Rafael Lopes,Marie Böttcher,Maximiliano D. Martins,Timofey Balashov,Lukas Gerhard,Jairo Sinova,Wulf Wulfhekel###
(1538401, 1538405)
 The driving force for skyrmion formation isthe non-collinear Dzyaloshinskii-Moriya exchange interaction (DMI) originatingfrom spin-orbit coupling (SOC).
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 100, 'mT', 3],[198.0, 4, 'd', 4],[398.0, 5, 'd', 6]

Co
###Stabilizing isolated skyrmions at low magnetic fields exploiting vanishing magnetic anisotropy|Marie Hervé,Bertrand Dupé,Rafael Lopes,Marie Böttcher,Maximiliano D. Martins,Timofey Balashov,Lukas Gerhard,Jairo Sinova,Wulf Wulfhekel###
(1538549, 1538549)
 Here,we show that isolated skyrmions in a monolayer (ML) of Co epitaxially grown ona Ru(0001) substrate can be stabilized at magnetic fields as low as 100 mT.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 100, 'mT', 0],[54.0, 4, 'd', 1],[254.0, 5, 'd', 3]

SOC
###Stabilizing isolated skyrmions at low magnetic fields exploiting vanishing magnetic anisotropy|Marie Hervé,Bertrand Dupé,Rafael Lopes,Marie Böttcher,Maximiliano D. Martins,Timofey Balashov,Lukas Gerhard,Jairo Sinova,Wulf Wulfhekel###
(1538592, 1538594)
Even though SOC is weak in the 4d element Ru, a homochiral spin spiral groundstate and isolated skyrmions could be detected and laterally resolved using acombination of tunneling and anisotropic tunneling magnetoresistance effect inspin-sensitive scanning tunneling microscopy (STM).
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 100, 'mT', 1],[9.0, 4, 'd', 0],[209.0, 5, 'd', 2]

Ru
###Stabilizing isolated skyrmions at low magnetic fields exploiting vanishing magnetic anisotropy|Marie Hervé,Bertrand Dupé,Rafael Lopes,Marie Böttcher,Maximiliano D. Martins,Timofey Balashov,Lukas Gerhard,Jairo Sinova,Wulf Wulfhekel###
(1538607, 1538607)
Even though SOC is weak in the 4d element Ru, a homochiral spin spiral groundstate and isolated skyrmions could be detected and laterally resolved using acombination of tunneling and anisotropic tunneling magnetoresistance effect inspin-sensitive scanning tunneling microscopy (STM).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 100, 'mT', 1],[4.0, 4, 'd', 0],[196.0, 5, 'd', 2]

S
###Stabilizing isolated skyrmions at low magnetic fields exploiting vanishing magnetic anisotropy|Marie Hervé,Bertrand Dupé,Rafael Lopes,Marie Böttcher,Maximiliano D. Martins,Timofey Balashov,Lukas Gerhard,Jairo Sinova,Wulf Wulfhekel###
(1538676, 1538676)
Even though SOC is weak in the 4d element Ru, a homochiral spin spiral groundstate and isolated skyrmions could be detected and laterally resolved using acombination of tunneling and anisotropic tunneling magnetoresistance effect inspin-sensitive scanning tunneling microscopy (STM).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 100, 'mT', 1],[73.0, 4, 'd', 0],[127.0, 5, 'd', 2]

I
###Stabilizing isolated skyrmions at low magnetic fields exploiting vanishing magnetic anisotropy|Marie Hervé,Bertrand Dupé,Rafael Lopes,Marie Böttcher,Maximiliano D. Martins,Timofey Balashov,Lukas Gerhard,Jairo Sinova,Wulf Wulfhekel###
(1538719, 1538719)
 Density functional theory(DFT) calculations confirm these chiral magnetic textures, even though thestabilizing DMI interaction is weak.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 100, 'mT', 2],[116.0, 4, 'd', 1],[84.0, 5, 'd', 1]

SOC
###Stabilizing isolated skyrmions at low magnetic fields exploiting vanishing magnetic anisotropy|Marie Hervé,Bertrand Dupé,Rafael Lopes,Marie Böttcher,Maximiliano D. Martins,Timofey Balashov,Lukas Gerhard,Jairo Sinova,Wulf Wulfhekel###
(1538782, 1538784)
 We find that the key factor is the absenceof magnetocristalline anisotropy in this system which enables non-collinearstates to evolve in spite of weak SOC, opening up a wide choice of materialsbeyond 5d elements.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[198.0, 100, 'mT', 3],[179.0, 4, 'd', 2],[19.0, 5, 'd', 0]

MoTe2
###Surface superconductivity in the Weyl semimetal MoTe2 detected by point contact spectroscopy|Yu. G. Naidyuk,O. E. Kvitnitskaya,D. L. Bashlakov,S. Aswartham,I. V. Morozov,I. O. Chernyavskii,G. Fuchs,S. -L. Drechsler,R. Hühne,K. Nielsch,B. Büchner,D. V. Efremov###
(1539217, 1539219)
Surface superconductivity in the Weyl semimetal MoTe2 detected by point contact spectroscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 5, 'K', 2],[282.0, -0.4, ',', 6]

MoTe2
###Surface superconductivity in the Weyl semimetal MoTe2 detected by point contact spectroscopy|Yu. G. Naidyuk,O. E. Kvitnitskaya,D. L. Bashlakov,S. Aswartham,I. V. Morozov,I. O. Chernyavskii,G. Fuchs,S. -L. Drechsler,R. Hühne,K. Nielsch,B. Büchner,D. V. Efremov###
(1539232, 1539234)
 MoTe2 is a Weyl semimetal, which exhibits unique non-saturatingmagnetoresistance and strongly reinforced superconductivity under pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 5, 'K', 1],[267.0, -0.4, ',', 5]

MoTe2
###Surface superconductivity in the Weyl semimetal MoTe2 detected by point contact spectroscopy|Yu. G. Naidyuk,O. E. Kvitnitskaya,D. L. Bashlakov,S. Aswartham,I. V. Morozov,I. O. Chernyavskii,G. Fuchs,S. -L. Drechsler,R. Hühne,K. Nielsch,B. Büchner,D. V. Efremov###
(1539306, 1539308)
Here, we demonstrate that a novel mesoscopic superconductivity at ambientpressure arises on the surface of MoTe2 with a critical temperature up to 5 Ksignificantly exceeding the bulk Tc0.1K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 5, 'K', 0],[193.0, -0.4, ',', 4]

Tc0.1K
###Surface superconductivity in the Weyl semimetal MoTe2 detected by point contact spectroscopy|Yu. G. Naidyuk,O. E. Kvitnitskaya,D. L. Bashlakov,S. Aswartham,I. V. Morozov,I. O. Chernyavskii,G. Fuchs,S. -L. Drechsler,R. Hühne,K. Nielsch,B. Büchner,D. V. Efremov###
(1539332, 1539334)
Here, we demonstrate that a novel mesoscopic superconductivity at ambientpressure arises on the surface of MoTe2 with a critical temperature up to 5 Ksignificantly exceeding the bulk Tc0.1K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.9090909090909091,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.09090909090909091,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 5, 'K', 0],[167.0, -0.4, ',', 4]

I
###Surface superconductivity in the Weyl semimetal MoTe2 detected by point contact spectroscopy|Yu. G. Naidyuk,O. E. Kvitnitskaya,D. L. Bashlakov,S. Aswartham,I. V. Morozov,I. O. Chernyavskii,G. Fuchs,S. -L. Drechsler,R. Hühne,K. Nielsch,B. Büchner,D. V. Efremov###
(1539347, 1539347)
 We measured the derivatives of I-Vcurves for metallic hetero-contacts of MoTe2 with Ag or Cu, homo-contacts ofMoTe2 as well as soft point contacts (PCs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 5, 'K', 1],[154.0, -0.4, ',', 3]

V
###Surface superconductivity in the Weyl semimetal MoTe2 detected by point contact spectroscopy|Yu. G. Naidyuk,O. E. Kvitnitskaya,D. L. Bashlakov,S. Aswartham,I. V. Morozov,I. O. Chernyavskii,G. Fuchs,S. -L. Drechsler,R. Hühne,K. Nielsch,B. Büchner,D. V. Efremov###
(1539349, 1539349)
 We measured the derivatives of I-Vcurves for metallic hetero-contacts of MoTe2 with Ag or Cu, homo-contacts ofMoTe2 as well as soft point contacts (PCs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 5, 'K', 1],[152.0, -0.4, ',', 3]

MoTe2
###Surface superconductivity in the Weyl semimetal MoTe2 detected by point contact spectroscopy|Yu. G. Naidyuk,O. E. Kvitnitskaya,D. L. Bashlakov,S. Aswartham,I. V. Morozov,I. O. Chernyavskii,G. Fuchs,S. -L. Drechsler,R. Hühne,K. Nielsch,B. Büchner,D. V. Efremov###
(1539364, 1539366)
 We measured the derivatives of I-Vcurves for metallic hetero-contacts of MoTe2 with Ag or Cu, homo-contacts ofMoTe2 as well as soft point contacts (PCs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 5, 'K', 1],[135.0, -0.4, ',', 3]

Ag
###Surface superconductivity in the Weyl semimetal MoTe2 detected by point contact spectroscopy|Yu. G. Naidyuk,O. E. Kvitnitskaya,D. L. Bashlakov,S. Aswartham,I. V. Morozov,I. O. Chernyavskii,G. Fuchs,S. -L. Drechsler,R. Hühne,K. Nielsch,B. Büchner,D. V. Efremov###
(1539370, 1539370)
 We measured the derivatives of I-Vcurves for metallic hetero-contacts of MoTe2 with Ag or Cu, homo-contacts ofMoTe2 as well as soft point contacts (PCs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 5, 'K', 1],[131.0, -0.4, ',', 3]

Cu
###Surface superconductivity in the Weyl semimetal MoTe2 detected by point contact spectroscopy|Yu. G. Naidyuk,O. E. Kvitnitskaya,D. L. Bashlakov,S. Aswartham,I. V. Morozov,I. O. Chernyavskii,G. Fuchs,S. -L. Drechsler,R. Hühne,K. Nielsch,B. Büchner,D. V. Efremov###
(1539374, 1539374)
 We measured the derivatives of I-Vcurves for metallic hetero-contacts of MoTe2 with Ag or Cu, homo-contacts ofMoTe2 as well as soft point contacts (PCs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 5, 'K', 1],[127.0, -0.4, ',', 3]

MoTe2
###Surface superconductivity in the Weyl semimetal MoTe2 detected by point contact spectroscopy|Yu. G. Naidyuk,O. E. Kvitnitskaya,D. L. Bashlakov,S. Aswartham,I. V. Morozov,I. O. Chernyavskii,G. Fuchs,S. -L. Drechsler,R. Hühne,K. Nielsch,B. Büchner,D. V. Efremov###
(1539384, 1539386)
 We measured the derivatives of I-Vcurves for metallic hetero-contacts of MoTe2 with Ag or Cu, homo-contacts ofMoTe2 as well as soft point contacts (PCs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 5, 'K', 1],[115.0, -0.4, ',', 3]

(PCs)
###Surface superconductivity in the Weyl semimetal MoTe2 detected by point contact spectroscopy|Yu. G. Naidyuk,O. E. Kvitnitskaya,D. L. Bashlakov,S. Aswartham,I. V. Morozov,I. O. Chernyavskii,G. Fuchs,S. -L. Drechsler,R. Hühne,K. Nielsch,B. Büchner,D. V. Efremov###
(1539400, 1539403)
 We measured the derivatives of I-Vcurves for metallic hetero-contacts of MoTe2 with Ag or Cu, homo-contacts ofMoTe2 as well as soft point contacts (PCs).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 5, 'K', 1],[98.0, -0.4, ',', 3]

V
###Surface superconductivity in the Weyl semimetal MoTe2 detected by point contact spectroscopy|Yu. G. Naidyuk,O. E. Kvitnitskaya,D. L. Bashlakov,S. Aswartham,I. V. Morozov,I. O. Chernyavskii,G. Fuchs,S. -L. Drechsler,R. Hühne,K. Nielsch,B. Büchner,D. V. Efremov###
(1539424, 1539424)
 Large number of thesehetero-contacts exhibit a d<missing VAR>V/d<missing VAR>I dependence, which is characteristic for Andreevreflection.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 5, 'K', 2],[77.0, -0.4, ',', 2]

I
###Surface superconductivity in the Weyl semimetal MoTe2 detected by point contact spectroscopy|Yu. G. Naidyuk,O. E. Kvitnitskaya,D. L. Bashlakov,S. Aswartham,I. V. Morozov,I. O. Chernyavskii,G. Fuchs,S. -L. Drechsler,R. Hühne,K. Nielsch,B. Büchner,D. V. Efremov###
(1539427, 1539427)
 Large number of thesehetero-contacts exhibit a d<missing VAR>V/d<missing VAR>I dependence, which is characteristic for Andreevreflection.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 5, 'K', 2],[74.0, -0.4, ',', 2]

V
###Surface superconductivity in the Weyl semimetal MoTe2 detected by point contact spectroscopy|Yu. G. Naidyuk,O. E. Kvitnitskaya,D. L. Bashlakov,S. Aswartham,I. V. Morozov,I. O. Chernyavskii,G. Fuchs,S. -L. Drechsler,R. Hühne,K. Nielsch,B. Büchner,D. V. Efremov###
(1539482, 1539482)
 The averagegap values are 2Delta1.30/-0.15 meV with a 2Delta/k<missing VAR>BTc ratio of 3.7/-0.4,which slightly exceeds the standard BCS value of 3.52.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 5, 'K', 4],[19.0, -0.4, ',', 0]

BTc
###Surface superconductivity in the Weyl semimetal MoTe2 detected by point contact spectroscopy|Yu. G. Naidyuk,O. E. Kvitnitskaya,D. L. Bashlakov,S. Aswartham,I. V. Morozov,I. O. Chernyavskii,G. Fuchs,S. -L. Drechsler,R. Hühne,K. Nielsch,B. Büchner,D. V. Efremov###
(1539492, 1539493)
 The averagegap values are 2Delta1.30/-0.15 meV with a 2Delta/k<missing VAR>BTc ratio of 3.7/-0.4,which slightly exceeds the standard BCS value of 3.52.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[171.0, 5, 'K', 4],[8.0, -0.4, ',', 0]

BCS
###Surface superconductivity in the Weyl semimetal MoTe2 detected by point contact spectroscopy|Yu. G. Naidyuk,O. E. Kvitnitskaya,D. L. Bashlakov,S. Aswartham,I. V. Morozov,I. O. Chernyavskii,G. Fuchs,S. -L. Drechsler,R. Hühne,K. Nielsch,B. Büchner,D. V. Efremov###
(1539516, 1539518)
 The averagegap values are 2Delta1.30/-0.15 meV with a 2Delta/k<missing VAR>BTc ratio of 3.7/-0.4,which slightly exceeds the standard BCS value of 3.52.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[195.0, 5, 'K', 4],[15.0, -0.4, ',', 0]

BCS
###Surface superconductivity in the Weyl semimetal MoTe2 detected by point contact spectroscopy|Yu. G. Naidyuk,O. E. Kvitnitskaya,D. L. Bashlakov,S. Aswartham,I. V. Morozov,I. O. Chernyavskii,G. Fuchs,S. -L. Drechsler,R. Hühne,K. Nielsch,B. Büchner,D. V. Efremov###
(1539547, 1539549)
 Furthermore, thetemperature dependence of the gap follows a BCS-like behavior, which points toa nodeless superconducting order parameter with some strong-couplingrenormalization.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[226.0, 5, 'K', 5],[46.0, -0.4, ',', 1]

V
###Surface superconductivity in the Weyl semimetal MoTe2 detected by point contact spectroscopy|Yu. G. Naidyuk,O. E. Kvitnitskaya,D. L. Bashlakov,S. Aswartham,I. V. Morozov,I. O. Chernyavskii,G. Fuchs,S. -L. Drechsler,R. Hühne,K. Nielsch,B. Büchner,D. V. Efremov###
(1539610, 1539610)
 Remarkably, the observation of a gapless-like single minimumin the d<missing VAR>V/d<missing VAR>I of soft PCs may indicate a topological superconducting state ofthe MoTe2 surface as these contacts probe mainly the interface and avoidadditional pressure effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[289.0, 5, 'K', 6],[109.0, -0.4, ',', 2]

I
###Surface superconductivity in the Weyl semimetal MoTe2 detected by point contact spectroscopy|Yu. G. Naidyuk,O. E. Kvitnitskaya,D. L. Bashlakov,S. Aswartham,I. V. Morozov,I. O. Chernyavskii,G. Fuchs,S. -L. Drechsler,R. Hühne,K. Nielsch,B. Büchner,D. V. Efremov###
(1539613, 1539613)
 Remarkably, the observation of a gapless-like single minimumin the d<missing VAR>V/d<missing VAR>I of soft PCs may indicate a topological superconducting state ofthe MoTe2 surface as these contacts probe mainly the interface and avoidadditional pressure effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[292.0, 5, 'K', 6],[112.0, -0.4, ',', 2]

PCs
###Surface superconductivity in the Weyl semimetal MoTe2 detected by point contact spectroscopy|Yu. G. Naidyuk,O. E. Kvitnitskaya,D. L. Bashlakov,S. Aswartham,I. V. Morozov,I. O. Chernyavskii,G. Fuchs,S. -L. Drechsler,R. Hühne,K. Nielsch,B. Büchner,D. V. Efremov###
(1539619, 1539620)
 Remarkably, the observation of a gapless-like single minimumin the d<missing VAR>V/d<missing VAR>I of soft PCs may indicate a topological superconducting state ofthe MoTe2 surface as these contacts probe mainly the interface and avoidadditional pressure effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[298.0, 5, 'K', 6],[118.0, -0.4, ',', 2]

MoTe2
###Surface superconductivity in the Weyl semimetal MoTe2 detected by point contact spectroscopy|Yu. G. Naidyuk,O. E. Kvitnitskaya,D. L. Bashlakov,S. Aswartham,I. V. Morozov,I. O. Chernyavskii,G. Fuchs,S. -L. Drechsler,R. Hühne,K. Nielsch,B. Büchner,D. V. Efremov###
(1539639, 1539641)
 Remarkably, the observation of a gapless-like single minimumin the d<missing VAR>V/d<missing VAR>I of soft PCs may indicate a topological superconducting state ofthe MoTe2 surface as these contacts probe mainly the interface and avoidadditional pressure effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[318.0, 5, 'K', 6],[138.0, -0.4, ',', 2]

MoTe2
###Surface superconductivity in the Weyl semimetal MoTe2 detected by point contact spectroscopy|Yu. G. Naidyuk,O. E. Kvitnitskaya,D. L. Bashlakov,S. Aswartham,I. V. Morozov,I. O. Chernyavskii,G. Fuchs,S. -L. Drechsler,R. Hühne,K. Nielsch,B. Büchner,D. V. Efremov###
(1539674, 1539676)
 Therefore, MoTe2 might be a suitable material tostudy new forms of topological superconductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[353.0, 5, 'K', 7],[173.0, -0.4, ',', 3]

Cr2Ge2Te6
###Pressure-induced spin reorientation transition in layered ferromagnetic insulator Cr2Ge2Te6|Zhisheng Lin,Mark Lohmann,Zulfikhar A. Ali,Chi Tang,Junxue Li,Wenyu Xing,Jiangnan Zhong,Shuang Jia,Wei Han,Sinisa Coh,Ward Beyermann,Jing Shi###
(1539730, 1539735)
Pressure-induced spin reorientation transition in layered ferromagnetic insulator Cr2Ge2Te6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 2, 'GPa', 1],[240.0, 100, '%', 4]

Cr2Ge2Te6
###Pressure-induced spin reorientation transition in layered ferromagnetic insulator Cr2Ge2Te6|Zhisheng Lin,Mark Lohmann,Zulfikhar A. Ali,Chi Tang,Junxue Li,Wenyu Xing,Jiangnan Zhong,Shuang Jia,Wei Han,Sinisa Coh,Ward Beyermann,Jing Shi###
(1539750, 1539755)
 Anisotropic magnetoresistance (AMR) of Cr2Ge2Te6 (CGT), a layeredferromagnetic insulator, is investigated under an applied hydrostatic pressureup to 2 GPa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 2, 'GPa', 0],[220.0, 100, '%', 3]

C
###Pressure-induced spin reorientation transition in layered ferromagnetic insulator Cr2Ge2Te6|Zhisheng Lin,Mark Lohmann,Zulfikhar A. Ali,Chi Tang,Junxue Li,Wenyu Xing,Jiangnan Zhong,Shuang Jia,Wei Han,Sinisa Coh,Ward Beyermann,Jing Shi###
(1539758, 1539758)
 Anisotropic magnetoresistance (AMR) of Cr2Ge2Te6 (CGT), a layeredferromagnetic insulator, is investigated under an applied hydrostatic pressureup to 2 GPa.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 2, 'GPa', 0],[217.0, 100, '%', 3]

At
###Pressure-induced spin reorientation transition in layered ferromagnetic insulator Cr2Ge2Te6|Zhisheng Lin,Mark Lohmann,Zulfikhar A. Ali,Chi Tang,Junxue Li,Wenyu Xing,Jiangnan Zhong,Shuang Jia,Wei Han,Sinisa Coh,Ward Beyermann,Jing Shi###
(1539845, 1539845)
 Atzero applied pressure, the easy axis is along the c<missing VAR>-direction or perpendicularto the layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 2, 'GPa', 2],[130.0, 100, '%', 1]

Pa
###Pressure-induced spin reorientation transition in layered ferromagnetic insulator Cr2Ge2Te6|Zhisheng Lin,Mark Lohmann,Zulfikhar A. Ali,Chi Tang,Junxue Li,Wenyu Xing,Jiangnan Zhong,Shuang Jia,Wei Han,Sinisa Coh,Ward Beyermann,Jing Shi###
(1539898, 1539898)
 Upon application of a hydrostatic pressure>1 G<missing VAR>Pa, the uniaxialanisotropy switches to easy-plane anisotropy which drives the equilibriummagnetization from the c<missing VAR>-axis to the ab-plane at zero magnetic field, whichamounts to a giant magnetic anisotropy energy change (>100%).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 2, 'GPa', 3],[77.0, 100, '%', 0]

As
###Pressure-induced spin reorientation transition in layered ferromagnetic insulator Cr2Ge2Te6|Zhisheng Lin,Mark Lohmann,Zulfikhar A. Ali,Chi Tang,Junxue Li,Wenyu Xing,Jiangnan Zhong,Shuang Jia,Wei Han,Sinisa Coh,Ward Beyermann,Jing Shi###
(1539980, 1539980)
 As thetemperature is increased across the Curie temperature, the characteristic AMReffect gradually decreases and disappears.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 2, 'GPa', 4],[5.0, 100, '%', 1]

Te
###Pressure-induced spin reorientation transition in layered ferromagnetic insulator Cr2Ge2Te6|Zhisheng Lin,Mark Lohmann,Zulfikhar A. Ali,Chi Tang,Junxue Li,Wenyu Xing,Jiangnan Zhong,Shuang Jia,Wei Han,Sinisa Coh,Ward Beyermann,Jing Shi###
(1540076, 1540076)
 Our first-principles calculationsconfirm the giant magnetic anisotropy energy change with moderate pressure andassign its origin to the increased off-site spin-orbit interaction of Te atomsdue to a shorter Cr-Te distance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[284.0, 2, 'GPa', 5],[101.0, 100, '%', 2]

Cr
###Pressure-induced spin reorientation transition in layered ferromagnetic insulator Cr2Ge2Te6|Zhisheng Lin,Mark Lohmann,Zulfikhar A. Ali,Chi Tang,Junxue Li,Wenyu Xing,Jiangnan Zhong,Shuang Jia,Wei Han,Sinisa Coh,Ward Beyermann,Jing Shi###
(1540089, 1540089)
 Our first-principles calculationsconfirm the giant magnetic anisotropy energy change with moderate pressure andassign its origin to the increased off-site spin-orbit interaction of Te atomsdue to a shorter Cr-Te distance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[297.0, 2, 'GPa', 5],[114.0, 100, '%', 2]

Te
###Pressure-induced spin reorientation transition in layered ferromagnetic insulator Cr2Ge2Te6|Zhisheng Lin,Mark Lohmann,Zulfikhar A. Ali,Chi Tang,Junxue Li,Wenyu Xing,Jiangnan Zhong,Shuang Jia,Wei Han,Sinisa Coh,Ward Beyermann,Jing Shi###
(1540091, 1540091)
 Our first-principles calculationsconfirm the giant magnetic anisotropy energy change with moderate pressure andassign its origin to the increased off-site spin-orbit interaction of Te atomsdue to a shorter Cr-Te distance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[299.0, 2, 'GPa', 5],[116.0, 100, '%', 2]

C
###Pressure-induced spin reorientation transition in layered ferromagnetic insulator Cr2Ge2Te6|Zhisheng Lin,Mark Lohmann,Zulfikhar A. Ali,Chi Tang,Junxue Li,Wenyu Xing,Jiangnan Zhong,Shuang Jia,Wei Han,Sinisa Coh,Ward Beyermann,Jing Shi###
(1540155, 1540155)
 Such a pressure-induced spin reorientationtransition is very rare in three-dimensional ferromagnets, but it may be commonto other layered ferromagnets with similar crystal structures to CGT, andtherefore offers a unique way to control magnetic anisotropy.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[363.0, 2, 'GPa', 6],[180.0, 100, '%', 3]

Co2MnSi/MgO/Co2MnSi
###Spincaloric properties of epitaxial Co$_2$MnSi/MgO/Co$_2$MnSi magnetic tunnel junctions|Benjamin Geisler,Peter Kratzer###
(1540198, 1540209)
Spincaloric properties of epitaxial Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Co2MnSi
###Spincaloric properties of epitaxial Co$_2$MnSi/MgO/Co$_2$MnSi magnetic tunnel junctions|Benjamin Geisler,Peter Kratzer###
(1540247, 1540250)
 The electronic transport and spincaloric properties of epitaxial magnetictunnel junctions with half-metallic Co2MnSi Heusler electrodes, MgOtunneling barriers, and different interface terminations are investigated byusing first-principles calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Spincaloric properties of epitaxial Co$_2$MnSi/MgO/Co$_2$MnSi magnetic tunnel junctions|Benjamin Geisler,Peter Kratzer###
(1540257, 1540258)
 The electronic transport and spincaloric properties of epitaxial magnetictunnel junctions with half-metallic Co2MnSi Heusler electrodes, MgOtunneling barriers, and different interface terminations are investigated byusing first-principles calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V/K
###Spincaloric properties of epitaxial Co$_2$MnSi/MgO/Co$_2$MnSi magnetic tunnel junctions|Benjamin Geisler,Peter Kratzer###
(1540543, 1540545)
 We find a large effective andspin-dependent Seebeck coefficient of -65 muV/K at room temperature forthe purely Co-terminated interface.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Co
###Spincaloric properties of epitaxial Co$_2$MnSi/MgO/Co$_2$MnSi magnetic tunnel junctions|Benjamin Geisler,Peter Kratzer###
(1540560, 1540560)
 We find a large effective andspin-dependent Seebeck coefficient of -65 muV/K at room temperature forthe purely Co-terminated interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Impact of thermal fluctuations on transport in antiferromagnetic semimetals|Youngseok Kim,Moon Jip Park,David G. Cahill,Matthew J. Gilbert###
(1540665, 1540665)
 Recent demonstrations on manipulating antiferromagnetic (AF) order havetriggered a growing interest in antiferromagnetic metal (AFM), and potentialhigh-density spintronic applications demand further improvements in theanisotropic magnetoresistance (AMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Impact of thermal fluctuations on transport in antiferromagnetic semimetals|Youngseok Kim,Moon Jip Park,David G. Cahill,Matthew J. Gilbert###
(1540689, 1540689)
 Recent demonstrations on manipulating antiferromagnetic (AF) order havetriggered a growing interest in antiferromagnetic metal (AFM), and potentialhigh-density spintronic applications demand further improvements in theanisotropic magnetoresistance (AMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Impact of thermal fluctuations on transport in antiferromagnetic semimetals|Youngseok Kim,Moon Jip Park,David G. Cahill,Matthew J. Gilbert###
(1540738, 1540738)
 The antiferromagnetic semimetals (AFS) arenewly discovered materials that possess massless Dirac fermions that areprotected by the crystalline symmetries.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Impact of thermal fluctuations on transport in antiferromagnetic semimetals|Youngseok Kim,Moon Jip Park,David G. Cahill,Matthew J. Gilbert###
(1540776, 1540776)
 In this material, a reorientation ofthe AF order may break the underlying symmetries and induce a finite energygap.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Impact of thermal fluctuations on transport in antiferromagnetic semimetals|Youngseok Kim,Moon Jip Park,David G. Cahill,Matthew J. Gilbert###
(1540793, 1540793)
 In this material, a reorientation ofthe AF order may break the underlying symmetries and induce a finite energygap.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Impact of thermal fluctuations on transport in antiferromagnetic semimetals|Youngseok Kim,Moon Jip Park,David G. Cahill,Matthew J. Gilbert###
(1540821, 1540821)
 As such, the possible phase transition from the semimetallic to insulatingphase gives us a choice for a wide range of resistance ensuring a large AMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Impact of thermal fluctuations on transport in antiferromagnetic semimetals|Youngseok Kim,Moon Jip Park,David G. Cahill,Matthew J. Gilbert###
(1540912, 1540912)
 Tofurther understand the robustness of the phase transition, we study thermalfluctuations of the AF order in AFS at a finite temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FS
###Impact of thermal fluctuations on transport in antiferromagnetic semimetals|Youngseok Kim,Moon Jip Park,David G. Cahill,Matthew J. Gilbert###
(1540919, 1540920)
 Tofurther understand the robustness of the phase transition, we study thermalfluctuations of the AF order in AFS at a finite temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Impact of thermal fluctuations on transport in antiferromagnetic semimetals|Youngseok Kim,Moon Jip Park,David G. Cahill,Matthew J. Gilbert###
(1540965, 1540965)
 For macroscopicsamples, we find that the thermal fluctuations effectively decrease themagnitude of the AF order by renormalizing the effective Hamiltonian.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FS
###Impact of thermal fluctuations on transport in antiferromagnetic semimetals|Youngseok Kim,Moon Jip Park,David G. Cahill,Matthew J. Gilbert###
(1541144, 1541145)
 For both cases, thesemimetallic phase shows a minimal change in its transmission spectrumillustrating the robustness of the symmetry protected states in AFS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FS
###Impact of thermal fluctuations on transport in antiferromagnetic semimetals|Youngseok Kim,Moon Jip Park,David G. Cahill,Matthew J. Gilbert###
(1541180, 1541181)
 Ourfinding may serve as a guideline for estimating and maximizing AMR of the AFSsamples at elevated temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin-Hall magnetoresistance in a low-dimensional magnetic insulator|Saül Vélez,Vitaly N. Golovach,Juan M. Gomez-Perez,Cong Tinh Bui,F. Rivadulla,Luis E. Hueso,F. Sebastian Bergeret,Fèlix Casanova###
(1541241, 1541241)
 We observe an unusual behavior of the spin Hall magnetoresistance (SMR)measured in a Pt ultra-thin film deposited on a ferromagnetic insulator, whichis a tensile-strained LaCoO3 (L<missing VAR>CO) thin film with the Curie temperature Tc85K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Spin-Hall magnetoresistance in a low-dimensional magnetic insulator|Saül Vélez,Vitaly N. Golovach,Juan M. Gomez-Perez,Cong Tinh Bui,F. Rivadulla,Luis E. Hueso,F. Sebastian Bergeret,Fèlix Casanova###
(1541253, 1541253)
 We observe an unusual behavior of the spin Hall magnetoresistance (SMR)measured in a Pt ultra-thin film deposited on a ferromagnetic insulator, whichis a tensile-strained LaCoO3 (L<missing VAR>CO) thin film with the Curie temperature Tc85K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaCoO3
###Spin-Hall magnetoresistance in a low-dimensional magnetic insulator|Saül Vélez,Vitaly N. Golovach,Juan M. Gomez-Perez,Cong Tinh Bui,F. Rivadulla,Luis E. Hueso,F. Sebastian Bergeret,Fèlix Casanova###
(1541283, 1541286)
 We observe an unusual behavior of the spin Hall magnetoresistance (SMR)measured in a Pt ultra-thin film deposited on a ferromagnetic insulator, whichis a tensile-strained LaCoO3 (L<missing VAR>CO) thin film with the Curie temperature Tc85K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Spin-Hall magnetoresistance in a low-dimensional magnetic insulator|Saül Vélez,Vitaly N. Golovach,Juan M. Gomez-Perez,Cong Tinh Bui,F. Rivadulla,Luis E. Hueso,F. Sebastian Bergeret,Fèlix Casanova###
(1541291, 1541291)
 We observe an unusual behavior of the spin Hall magnetoresistance (SMR)measured in a Pt ultra-thin film deposited on a ferromagnetic insulator, whichis a tensile-strained LaCoO3 (L<missing VAR>CO) thin film with the Curie temperature Tc85K.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc85K
###Spin-Hall magnetoresistance in a low-dimensional magnetic insulator|Saül Vélez,Vitaly N. Golovach,Juan M. Gomez-Perez,Cong Tinh Bui,F. Rivadulla,Luis E. Hueso,F. Sebastian Bergeret,Fèlix Casanova###
(1541306, 1541308)
 We observe an unusual behavior of the spin Hall magnetoresistance (SMR)measured in a Pt ultra-thin film deposited on a ferromagnetic insulator, whichis a tensile-strained LaCoO3 (L<missing VAR>CO) thin film with the Curie temperature Tc85K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.011627906976744186,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.9883720930232558,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin-Hall magnetoresistance in a low-dimensional magnetic insulator|Saül Vélez,Vitaly N. Golovach,Juan M. Gomez-Perez,Cong Tinh Bui,F. Rivadulla,Luis E. Hueso,F. Sebastian Bergeret,Fèlix Casanova###
(1541314, 1541314)
The SMR displays a strong magnetic-field dependence below Tc, with the SMRamplitude continuing to increase (linearly) with increasing the field farbeyond the saturation value of the ferromagnet.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###Spin-Hall magnetoresistance in a low-dimensional magnetic insulator|Saül Vélez,Vitaly N. Golovach,Juan M. Gomez-Perez,Cong Tinh Bui,F. Rivadulla,Luis E. Hueso,F. Sebastian Bergeret,Fèlix Casanova###
(1541332, 1541332)
The SMR displays a strong magnetic-field dependence below Tc, with the SMRamplitude continuing to increase (linearly) with increasing the field farbeyond the saturation value of the ferromagnet.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin-Hall magnetoresistance in a low-dimensional magnetic insulator|Saül Vélez,Vitaly N. Golovach,Juan M. Gomez-Perez,Cong Tinh Bui,F. Rivadulla,Luis E. Hueso,F. Sebastian Bergeret,Fèlix Casanova###
(1541339, 1541339)
The SMR displays a strong magnetic-field dependence below Tc, with the SMRamplitude continuing to increase (linearly) with increasing the field farbeyond the saturation value of the ferromagnet.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin-Hall magnetoresistance in a low-dimensional magnetic insulator|Saül Vélez,Vitaly N. Golovach,Juan M. Gomez-Perez,Cong Tinh Bui,F. Rivadulla,Luis E. Hueso,F. Sebastian Bergeret,Fèlix Casanova###
(1541384, 1541384)
 The SMR amplitude decreasesgradually with raising the temperature across Tc and remains measurable evenabove Tc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###Spin-Hall magnetoresistance in a low-dimensional magnetic insulator|Saül Vélez,Vitaly N. Golovach,Juan M. Gomez-Perez,Cong Tinh Bui,F. Rivadulla,Luis E. Hueso,F. Sebastian Bergeret,Fèlix Casanova###
(1541405, 1541405)
 The SMR amplitude decreasesgradually with raising the temperature across Tc and remains measurable evenabove Tc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###Spin-Hall magnetoresistance in a low-dimensional magnetic insulator|Saül Vélez,Vitaly N. Golovach,Juan M. Gomez-Perez,Cong Tinh Bui,F. Rivadulla,Luis E. Hueso,F. Sebastian Bergeret,Fèlix Casanova###
(1541418, 1541418)
 The SMR amplitude decreasesgradually with raising the temperature across Tc and remains measurable evenabove Tc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin-Hall magnetoresistance in a low-dimensional magnetic insulator|Saül Vélez,Vitaly N. Golovach,Juan M. Gomez-Perez,Cong Tinh Bui,F. Rivadulla,Luis E. Hueso,F. Sebastian Bergeret,Fèlix Casanova###
(1541445, 1541445)
 Moreover, no hysteresis is observed in the field dependence of theSMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CO
###Spin-Hall magnetoresistance in a low-dimensional magnetic insulator|Saül Vélez,Vitaly N. Golovach,Juan M. Gomez-Perez,Cong Tinh Bui,F. Rivadulla,Luis E. Hueso,F. Sebastian Bergeret,Fèlix Casanova###
(1541482, 1541483)
 These results indicate that a novel low-dimensional magnetic system formson the surface of L<missing VAR>CO and that the Pt/L<missing VAR>CO interface decouples magnetically fromthe rest of the L<missing VAR>CO thin film.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Spin-Hall magnetoresistance in a low-dimensional magnetic insulator|Saül Vélez,Vitaly N. Golovach,Juan M. Gomez-Perez,Cong Tinh Bui,F. Rivadulla,Luis E. Hueso,F. Sebastian Bergeret,Fèlix Casanova###
(1541491, 1541491)
 These results indicate that a novel low-dimensional magnetic system formson the surface of L<missing VAR>CO and that the Pt/L<missing VAR>CO interface decouples magnetically fromthe rest of the L<missing VAR>CO thin film.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CO
###Spin-Hall magnetoresistance in a low-dimensional magnetic insulator|Saül Vélez,Vitaly N. Golovach,Juan M. Gomez-Perez,Cong Tinh Bui,F. Rivadulla,Luis E. Hueso,F. Sebastian Bergeret,Fèlix Casanova###
(1541494, 1541495)
 These results indicate that a novel low-dimensional magnetic system formson the surface of L<missing VAR>CO and that the Pt/L<missing VAR>CO interface decouples magnetically fromthe rest of the L<missing VAR>CO thin film.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CO
###Spin-Hall magnetoresistance in a low-dimensional magnetic insulator|Saül Vélez,Vitaly N. Golovach,Juan M. Gomez-Perez,Cong Tinh Bui,F. Rivadulla,Luis E. Hueso,F. Sebastian Bergeret,Fèlix Casanova###
(1541515, 1541516)
 These results indicate that a novel low-dimensional magnetic system formson the surface of L<missing VAR>CO and that the Pt/L<missing VAR>CO interface decouples magnetically fromthe rest of the L<missing VAR>CO thin film.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin-Hall magnetoresistance in a low-dimensional magnetic insulator|Saül Vélez,Vitaly N. Golovach,Juan M. Gomez-Perez,Cong Tinh Bui,F. Rivadulla,Luis E. Hueso,F. Sebastian Bergeret,Fèlix Casanova###
(1541545, 1541545)
 To explain the experiment, we revisit thederivation of the SMR corrections and relate the spin-mixing conductances tothe microscopic quantities describing the magnetism at the interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaAlO3/SrTiO3
###Magnetotransport of a 2DEG with anisotropic Rashba interaction at the LaAlO$_3$/SrTiO$_3$ interface|Azadeh Faridi,Reza Asgari,Abdollah Langari###
(1541653, 1541661)
Magnetotransport of a 2DEG with anisotropic Rashba interaction at the LaAlO3/SrTiO3 interface.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[14.0, 2, 'DEG', 0]

LaAlO3
###Magnetotransport of a 2DEG with anisotropic Rashba interaction at the LaAlO$_3$/SrTiO$_3$ interface|Azadeh Faridi,Reza Asgari,Abdollah Langari###
(1541707, 1541710)
 We investigate the magnetotransport properties of a two-dimensional electrongas with anisotropic k<missing VAR>-cubic Rashba interaction at thermLaAlO3/rmSrTiO3 interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 2, 'DEG', 1]

SrTiO3
###Magnetotransport of a 2DEG with anisotropic Rashba interaction at the LaAlO$_3$/SrTiO$_3$ interface|Azadeh Faridi,Reza Asgari,Abdollah Langari###
(1541713, 1541716)
 We investigate the magnetotransport properties of a two-dimensional electrongas with anisotropic k<missing VAR>-cubic Rashba interaction at thermLaAlO3/rmSrTiO3 interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 2, 'DEG', 1]

H
###Magnetotransport of a 2DEG with anisotropic Rashba interaction at the LaAlO$_3$/SrTiO$_3$ interface|Azadeh Faridi,Reza Asgari,Abdollah Langari###
(1541945, 1541945)
 On the other hand, as the magnetic field increases, theZeeman term becomes the dominant splitting mechanism leading to the spin-splitpeaks in SdH oscillations.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[306.0, 2, 'DEG', 5]

CrI3
###Interplay between interlayer exchange and stacking in CrI$_3$ bilayers|D. Soriano,C. Cardoso,J. Fernández-Rossier###
(1542200, 1542202)
Interplay between interlayer exchange and stacking in CrI3 bilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CrI3
###Interplay between interlayer exchange and stacking in CrI$_3$ bilayers|D. Soriano,C. Cardoso,J. Fernández-Rossier###
(1542232, 1542234)
 We address the interplay between stacking and interlayer exchange forferromagnetically ordered CrI3, both for bilayers and bulk.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CrI3
###Interplay between interlayer exchange and stacking in CrI$_3$ bilayers|D. Soriano,C. Cardoso,J. Fernández-Rossier###
(1542253, 1542255)
 Whereas bulkCrI3 is ferromagnetic, both magneto-optical and transport experiments showthat interlayer exchange for CrI3 bilayers is antiferromagnetic.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CrI3
###Interplay between interlayer exchange and stacking in CrI$_3$ bilayers|D. Soriano,C. Cardoso,J. Fernández-Rossier###
(1542285, 1542287)
 Whereas bulkCrI3 is ferromagnetic, both magneto-optical and transport experiments showthat interlayer exchange for CrI3 bilayers is antiferromagnetic.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CrI3
###Interplay between interlayer exchange and stacking in CrI$_3$ bilayers|D. Soriano,C. Cardoso,J. Fernández-Rossier###
(1542299, 1542301)
 BulkCrI3 is known to assume two crystal structures, rhombohedral and monoclinic,that differ mostly in the stacking between monolayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CrI3
###Interplay between interlayer exchange and stacking in CrI$_3$ bilayers|D. Soriano,C. Cardoso,J. Fernández-Rossier###
(1542355, 1542357)
 Below 210-220 Kelvin,bulk CrI3 orders in a rhombohedral phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CrI3
###Interplay between interlayer exchange and stacking in CrI$_3$ bilayers|D. Soriano,C. Cardoso,J. Fernández-Rossier###
(1542424, 1542426)
Specifically, the ground states of both bulk and free-standing CrI3 bilayersare ferromagnetic for the rhombohedral phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Interplay between interlayer exchange and stacking in CrI$_3$ bilayers|D. Soriano,C. Cardoso,J. Fernández-Rossier###
(1542444, 1542444)
 In contrast, the energydifference between both configurations is more than one order of magnitudesmaller for the monoclinic phase, and eventually becomes antiferromagnetic wheneither positive strain or on-site Hubbard interactions (U geq 3) areconsidered.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

U
###Interplay between interlayer exchange and stacking in CrI$_3$ bilayers|D. Soriano,C. Cardoso,J. Fernández-Rossier###
(1542516, 1542516)
 In contrast, the energydifference between both configurations is more than one order of magnitudesmaller for the monoclinic phase, and eventually becomes antiferromagnetic wheneither positive strain or on-site Hubbard interactions (U geq 3) areconsidered.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CrI3
###Interplay between interlayer exchange and stacking in CrI$_3$ bilayers|D. Soriano,C. Cardoso,J. Fernández-Rossier###
(1542579, 1542581)
 We also explore the interplay between interlayer hybrydization andstacking, using a Wannier basis, and between interlayer hybrydization andrelative magnetic alignment for CrI3 bilayers, that helps to account for thevery large tunnel magnetoresistance obvserved in recent experiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CrI3
###Spin transistor built on 2D van der Waals heterostructures|Shengwei Jiang,Lizhong Li,Zefang Wang,Jie Shan,Kin Fai Mak###
(1542851, 1542853)
 Spin transistors (whose on-off operation is achieved byelectric-field-controlled spin orientation 1), if realized, can revolutionizemodern electronics through the implementation of a faster and a moreenergy-efficient performance as well as non-volatile data storage 2, 3. Theoriginal proposal by Datta and Das 1 that relies on electric-field-controlledspin precession in a semiconductor channel faces significant challengesincluding inefficient spin injection, spin relaxation and spread of the spinprecession angle 4, 5. Recent demonstration of electric-field switching ofmagnetic order 6-8 and spin filtering 9-12 in two-dimensional magneticinsulator CrI3 has inspired a new operational principle for spin transistors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[220.0, 2, 'D', 1],[122.0, 2, ',', 0],[120.0, 3.0, 'The', 0],[106.0, 1, 'that', 0],[46.0, 4, ',', 0],[44.0, 5.0, 'Recent', 0]

CrI3
###Spin transistor built on 2D van der Waals heterostructures|Shengwei Jiang,Lizhong Li,Zefang Wang,Jie Shan,Kin Fai Mak###
(1542900, 1542902)
Here we demonstrate spin field-effect transistors based on dual-gatedgraphene/CrI3 tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[269.0, 2, 'D', 2],[171.0, 2, ',', 1],[169.0, 3.0, 'The', 1],[155.0, 1, 'that', 1],[95.0, 4, ',', 1],[93.0, 5.0, 'Recent', 1]

CrI3
###Spin transistor built on 2D van der Waals heterostructures|Shengwei Jiang,Lizhong Li,Zefang Wang,Jie Shan,Kin Fai Mak###
(1542942, 1542944)
 These devices show an ambipolar transistorbehavior and tunnel magnetoresistance widely tunable by gating when the CrI3magnetic tunnel barrier undergoes an antiferromagnetic-ferromagnetic spin-fliptransition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[311.0, 2, 'D', 3],[213.0, 2, ',', 2],[211.0, 3.0, 'The', 2],[197.0, 1, 'that', 2],[137.0, 4, ',', 2],[135.0, 5.0, 'Recent', 2]

(CrI3)
###Voltage Control of a van der Waals Spin-Filter Magnetic Tunnel Junction|Tiancheng Song,Matisse Wei-Yuan Tu,Caitlin Carnahan,Xinghan Cai,Takashi Taniguchi,Kenji Watanabe,Michael A. McGuire,David H. Cobden,Di Xiao,Wang Yao,Xiaodong Xu###
(1543155, 1543159)
 Atomically thin chromium triiodide (CrI3) has recently been identified as alayered antiferromagnetic insulator, in which adjacent ferromagnetic monolayersare antiferromagnetically coupled.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[267.0, 17, ',', 4],[269.0, 0, '%', 4],[274.0, 57, ',', 4],[276.0, 0, '%', 4]

CrI3
###Voltage Control of a van der Waals Spin-Filter Magnetic Tunnel Junction|Tiancheng Song,Matisse Wei-Yuan Tu,Caitlin Carnahan,Xinghan Cai,Takashi Taniguchi,Kenji Watanabe,Michael A. McGuire,David H. Cobden,Di Xiao,Wang Yao,Xiaodong Xu###
(1543292, 1543294)
 Here we report voltage control of TMR formed byfour-layer CrI3 sandwiched by monolayer graphene contacts in a dual-gatedstructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 17, ',', 2],[134.0, 0, '%', 2],[139.0, 57, ',', 2],[141.0, 0, '%', 2]

In
###Voltage Control of a van der Waals Spin-Filter Magnetic Tunnel Junction|Tiancheng Song,Matisse Wei-Yuan Tu,Caitlin Carnahan,Xinghan Cai,Takashi Taniguchi,Kenji Watanabe,Michael A. McGuire,David H. Cobden,Di Xiao,Wang Yao,Xiaodong Xu###
(1543395, 1543395)
 In addition, without switching the state, the TMR can be continuouslymodulated between 17,000% and 57,000%, due to the combination of spin-dependenttunnel barrier with changing carrier distributions in the graphene contacts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 17, ',', 0],[33.0, 0, '%', 0],[38.0, 57, ',', 0],[40.0, 0, '%', 0]

Ga1-xMn
###Nematicity of correlated systems driven by anisotropic chemical phase separation|Ye Yuan,René Hübner,Magdalena Birowska,Chi Xu,Mao Wang,Slawomir Prucnal,Rafal Jakiela,Kay Potzger,Roman Böttger,Stefan Facsko,Jacek A. Majewski,Manfred Helm,Maciej Sawicki,Shengqiang Zhou,Tomasz Dietl###
(1543673, 1543677)
, in-plane rotational symmetry breaking, and inparticular the relative role played by spontaneous unidirectional ordering ofspin, orbital, or charge degrees of freedom, is a challenging issue ofmagnetism, unconventional superconductivity, and quantum Hall effect systems,discussed in the context of doped semiconductor systems, such asGa1-xMnx<missing VAR>As, Cux<missing VAR>Bi2Se3, and Ga(Al)As/Alx<missing VAR>Ga1-xAs quantumwells, respectively.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

As
###Nematicity of correlated systems driven by anisotropic chemical phase separation|Ye Yuan,René Hübner,Magdalena Birowska,Chi Xu,Mao Wang,Slawomir Prucnal,Rafal Jakiela,Kay Potzger,Roman Böttger,Stefan Facsko,Jacek A. Majewski,Manfred Helm,Maciej Sawicki,Shengqiang Zhou,Tomasz Dietl###
(1543679, 1543679)
, in-plane rotational symmetry breaking, and inparticular the relative role played by spontaneous unidirectional ordering ofspin, orbital, or charge degrees of freedom, is a challenging issue ofmagnetism, unconventional superconductivity, and quantum Hall effect systems,discussed in the context of doped semiconductor systems, such asGa1-xMnx<missing VAR>As, Cux<missing VAR>Bi2Se3, and Ga(Al)As/Alx<missing VAR>Ga1-xAs quantumwells, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Nematicity of correlated systems driven by anisotropic chemical phase separation|Ye Yuan,René Hübner,Magdalena Birowska,Chi Xu,Mao Wang,Slawomir Prucnal,Rafal Jakiela,Kay Potzger,Roman Böttger,Stefan Facsko,Jacek A. Majewski,Manfred Helm,Maciej Sawicki,Shengqiang Zhou,Tomasz Dietl###
(1543682, 1543682)
, in-plane rotational symmetry breaking, and inparticular the relative role played by spontaneous unidirectional ordering ofspin, orbital, or charge degrees of freedom, is a challenging issue ofmagnetism, unconventional superconductivity, and quantum Hall effect systems,discussed in the context of doped semiconductor systems, such asGa1-xMnx<missing VAR>As, Cux<missing VAR>Bi2Se3, and Ga(Al)As/Alx<missing VAR>Ga1-xAs quantumwells, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Se3
###Nematicity of correlated systems driven by anisotropic chemical phase separation|Ye Yuan,René Hübner,Magdalena Birowska,Chi Xu,Mao Wang,Slawomir Prucnal,Rafal Jakiela,Kay Potzger,Roman Böttger,Stefan Facsko,Jacek A. Majewski,Manfred Helm,Maciej Sawicki,Shengqiang Zhou,Tomasz Dietl###
(1543684, 1543687)
, in-plane rotational symmetry breaking, and inparticular the relative role played by spontaneous unidirectional ordering ofspin, orbital, or charge degrees of freedom, is a challenging issue ofmagnetism, unconventional superconductivity, and quantum Hall effect systems,discussed in the context of doped semiconductor systems, such asGa1-xMnx<missing VAR>As, Cux<missing VAR>Bi2Se3, and Ga(Al)As/Alx<missing VAR>Ga1-xAs quantumwells, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga(Al)As/Al
###Nematicity of correlated systems driven by anisotropic chemical phase separation|Ye Yuan,René Hübner,Magdalena Birowska,Chi Xu,Mao Wang,Slawomir Prucnal,Rafal Jakiela,Kay Potzger,Roman Böttger,Stefan Facsko,Jacek A. Majewski,Manfred Helm,Maciej Sawicki,Shengqiang Zhou,Tomasz Dietl###
(1543692, 1543698)
, in-plane rotational symmetry breaking, and inparticular the relative role played by spontaneous unidirectional ordering ofspin, orbital, or charge degrees of freedom, is a challenging issue ofmagnetism, unconventional superconductivity, and quantum Hall effect systems,discussed in the context of doped semiconductor systems, such asGa1-xMnx<missing VAR>As, Cux<missing VAR>Bi2Se3, and Ga(Al)As/Alx<missing VAR>Ga1-xAs quantumwells, respectively.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Ga1-xAs
###Nematicity of correlated systems driven by anisotropic chemical phase separation|Ye Yuan,René Hübner,Magdalena Birowska,Chi Xu,Mao Wang,Slawomir Prucnal,Rafal Jakiela,Kay Potzger,Roman Böttger,Stefan Facsko,Jacek A. Majewski,Manfred Helm,Maciej Sawicki,Shengqiang Zhou,Tomasz Dietl###
(1543700, 1543704)
, in-plane rotational symmetry breaking, and inparticular the relative role played by spontaneous unidirectional ordering ofspin, orbital, or charge degrees of freedom, is a challenging issue ofmagnetism, unconventional superconductivity, and quantum Hall effect systems,discussed in the context of doped semiconductor systems, such asGa1-xMnx<missing VAR>As, Cux<missing VAR>Bi2Se3, and Ga(Al)As/Alx<missing VAR>Ga1-xAs quantumwells, respectively.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

In1-xFe
###Nematicity of correlated systems driven by anisotropic chemical phase separation|Ye Yuan,René Hübner,Magdalena Birowska,Chi Xu,Mao Wang,Slawomir Prucnal,Rafal Jakiela,Kay Potzger,Roman Böttger,Stefan Facsko,Jacek A. Majewski,Manfred Helm,Maciej Sawicki,Shengqiang Zhou,Tomasz Dietl###
(1543735, 1543739)
 Here, guided by our experimental and theoretical resultsfor In1-xFex<missing VAR>As, we demonstrate that spinodal phase separation at thegrowth surface (that has a lower symmetry than the bulk) can lead to a quenchednematic order of alloy components, which then governs low temperature magneticand magnetotransport properties, in particular the magnetoresistance anisotropywhose theory for the C2v<missing VAR> symmetry group is advanced here.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

As
###Nematicity of correlated systems driven by anisotropic chemical phase separation|Ye Yuan,René Hübner,Magdalena Birowska,Chi Xu,Mao Wang,Slawomir Prucnal,Rafal Jakiela,Kay Potzger,Roman Böttger,Stefan Facsko,Jacek A. Majewski,Manfred Helm,Maciej Sawicki,Shengqiang Zhou,Tomasz Dietl###
(1543741, 1543741)
 Here, guided by our experimental and theoretical resultsfor In1-xFex<missing VAR>As, we demonstrate that spinodal phase separation at thegrowth surface (that has a lower symmetry than the bulk) can lead to a quenchednematic order of alloy components, which then governs low temperature magneticand magnetotransport properties, in particular the magnetoresistance anisotropywhose theory for the C2v<missing VAR> symmetry group is advanced here.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C2
###Nematicity of correlated systems driven by anisotropic chemical phase separation|Ye Yuan,René Hübner,Magdalena Birowska,Chi Xu,Mao Wang,Slawomir Prucnal,Rafal Jakiela,Kay Potzger,Roman Böttger,Stefan Facsko,Jacek A. Majewski,Manfred Helm,Maciej Sawicki,Shengqiang Zhou,Tomasz Dietl###
(1543844, 1543845)
 Here, guided by our experimental and theoretical resultsfor In1-xFex<missing VAR>As, we demonstrate that spinodal phase separation at thegrowth surface (that has a lower symmetry than the bulk) can lead to a quenchednematic order of alloy components, which then governs low temperature magneticand magnetotransport properties, in particular the magnetoresistance anisotropywhose theory for the C2v<missing VAR> symmetry group is advanced here.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga1-xMn
###Nematicity of correlated systems driven by anisotropic chemical phase separation|Ye Yuan,René Hübner,Magdalena Birowska,Chi Xu,Mao Wang,Slawomir Prucnal,Rafal Jakiela,Kay Potzger,Roman Böttger,Stefan Facsko,Jacek A. Majewski,Manfred Helm,Maciej Sawicki,Shengqiang Zhou,Tomasz Dietl###
(1543875, 1543879)
 These findings,together with earlier data for Ga1-xMnx<missing VAR>As, show under which conditionsanisotropic chemical phase separation accounts for the magnitude of transitiontemperature to a collective phase or merely breaks its rotational symmetry.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

As
###Nematicity of correlated systems driven by anisotropic chemical phase separation|Ye Yuan,René Hübner,Magdalena Birowska,Chi Xu,Mao Wang,Slawomir Prucnal,Rafal Jakiela,Kay Potzger,Roman Böttger,Stefan Facsko,Jacek A. Majewski,Manfred Helm,Maciej Sawicki,Shengqiang Zhou,Tomasz Dietl###
(1543881, 1543881)
 These findings,together with earlier data for Ga1-xMnx<missing VAR>As, show under which conditionsanisotropic chemical phase separation accounts for the magnitude of transitiontemperature to a collective phase or merely breaks its rotational symmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Galvanomagnetic properties of the putative type-II Dirac semimetal PtTe$_2$|Orest Pavlosiuk,Dariusz Kaczorowski###
(1544025, 1544026)
Galvanomagnetic properties of the putative type-II Dirac semimetal PtTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 3000, '%', 3],[215.0, 1.69, ',', 4],[335.0, 3, ',', 6]

PtTe2
###Galvanomagnetic properties of the putative type-II Dirac semimetal PtTe$_2$|Orest Pavlosiuk,Dariusz Kaczorowski###
(1544032, 1544034)
Galvanomagnetic properties of the putative type-II Dirac semimetal PtTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 3000, '%', 3],[207.0, 1.69, ',', 4],[327.0, 3, ',', 6]

II
###Galvanomagnetic properties of the putative type-II Dirac semimetal PtTe$_2$|Orest Pavlosiuk,Dariusz Kaczorowski###
(1544089, 1544090)
 Platinum ditelluride has recently been characterized, based on angle-resolvedphotoemission spectroscopy data and electronic band structure calculations, asa possible representative of type-II Dirac semimetals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 3000, '%', 2],[151.0, 1.69, ',', 3],[271.0, 3, ',', 5]

PtTe2
###Galvanomagnetic properties of the putative type-II Dirac semimetal PtTe$_2$|Orest Pavlosiuk,Dariusz Kaczorowski###
(1544159, 1544161)
 Themagnetoresistance (MR) of PtTe2 is large (over 3000% at T<missing VAR>1.8 K inB9 T) and unsaturated in strong fields in the entire temperature rangestudied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 3000, '%', 0],[80.0, 1.69, ',', 1],[200.0, 3, ',', 3]

K
###Galvanomagnetic properties of the putative type-II Dirac semimetal PtTe$_2$|Orest Pavlosiuk,Dariusz Kaczorowski###
(1544178, 1544178)
 Themagnetoresistance (MR) of PtTe2 is large (over 3000% at T<missing VAR>1.8 K inB9 T) and unsaturated in strong fields in the entire temperature rangestudied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 3000, '%', 0],[63.0, 1.69, ',', 1],[183.0, 3, ',', 3]

B9
###Galvanomagnetic properties of the putative type-II Dirac semimetal PtTe$_2$|Orest Pavlosiuk,Dariusz Kaczorowski###
(1544183, 1544184)
 Themagnetoresistance (MR) of PtTe2 is large (over 3000% at T<missing VAR>1.8 K inB9 T) and unsaturated in strong fields in the entire temperature rangestudied.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 3000, '%', 0],[57.0, 1.69, ',', 1],[177.0, 3, ',', 3]

In
###Galvanomagnetic properties of the putative type-II Dirac semimetal PtTe$_2$|Orest Pavlosiuk,Dariusz Kaczorowski###
(1544263, 1544263)
 In appliedmagnetic fields, the resistivity shows a low-temperature plateau,characteristic of topological semimetals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 3000, '%', 2],[22.0, 1.69, ',', 1],[98.0, 3, ',', 1]

In
###Galvanomagnetic properties of the putative type-II Dirac semimetal PtTe$_2$|Orest Pavlosiuk,Dariusz Kaczorowski###
(1544298, 1544298)
 In strong fields, well-resolvedShubnikov - de Haas (SdH) oscillations with two principle frequencies werefound, and their analysis yielded charge mobilities of the order of103,rmcm2V-1s<missing VAR>-1 and rather small effective masses of chargecarriers, 0.11me and 0.21me.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 3000, '%', 3],[57.0, 1.69, ',', 2],[63.0, 3, ',', 0]

H
###Galvanomagnetic properties of the putative type-II Dirac semimetal PtTe$_2$|Orest Pavlosiuk,Dariusz Kaczorowski###
(1544320, 1544320)
 In strong fields, well-resolvedShubnikov - de Haas (SdH) oscillations with two principle frequencies werefound, and their analysis yielded charge mobilities of the order of103,rmcm2V-1s<missing VAR>-1 and rather small effective masses of chargecarriers, 0.11me and 0.21me.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 3000, '%', 3],[79.0, 1.69, ',', 2],[41.0, 3, ',', 0]

V
###Galvanomagnetic properties of the putative type-II Dirac semimetal PtTe$_2$|Orest Pavlosiuk,Dariusz Kaczorowski###
(1544366, 1544366)
 In strong fields, well-resolvedShubnikov - de Haas (SdH) oscillations with two principle frequencies werefound, and their analysis yielded charge mobilities of the order of103,rmcm2V-1s<missing VAR>-1 and rather small effective masses of chargecarriers, 0.11me and 0.21me.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[196.0, 3000, '%', 3],[125.0, 1.69, ',', 2],[5.0, 3, ',', 0]

H
###Galvanomagnetic properties of the putative type-II Dirac semimetal PtTe$_2$|Orest Pavlosiuk,Dariusz Kaczorowski###
(1544437, 1544437)
 However, the extracted Berry phases point totrivial character of the electronic bands involved in the SdH oscillations.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[267.0, 3000, '%', 4],[196.0, 1.69, ',', 3],[76.0, 3, ',', 1]

PtTe2
###Galvanomagnetic properties of the putative type-II Dirac semimetal PtTe$_2$|Orest Pavlosiuk,Dariusz Kaczorowski###
(1544472, 1544474)
 TheHall effect data corroborated a multi-band character of the electricalconductivity in PtTe2, with moderate charge compensation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[302.0, 3000, '%', 5],[231.0, 1.69, ',', 4],[111.0, 3, ',', 2]

HgTe
###Sign-alternating photoconductivity and magnetoresistance oscillations induced by terahertz radiation in HgTe quantum wells|M. Otteneder,I. A. Dmitriev,S. Candussio,M. L. Savchenko,D. A. Kozlov,V. V. Bel'kov,Z. D. Kvon,N. N. Mikhailov,S. A. Dvoretsky,S. D. Ganichev###
(1544516, 1544517)
Sign-alternating photoconductivity and magnetoresistance oscillations induced by terahertz radiation in HgTe quantum wells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 20, 'nm', 2],[170.0, 5, 'to', 3],[171.0, 20, 'nm', 3]

O
###Sign-alternating photoconductivity and magnetoresistance oscillations induced by terahertz radiation in HgTe quantum wells|M. Otteneder,I. A. Dmitriev,S. Candussio,M. L. Savchenko,D. A. Kozlov,V. V. Bel'kov,Z. D. Kvon,N. N. Mikhailov,S. A. Dvoretsky,S. D. Ganichev###
(1544569, 1544569)
 We report on the observation of terahertz radiation induced photoconductivityand of terahertz analog of the microwave-induced resistance oscillations (MIRO)in HgTe-based quantum well (Q<missing VAR>W) structures of different width.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 20, 'nm', 1],[118.0, 5, 'to', 2],[119.0, 20, 'nm', 2]

HgTe
###Sign-alternating photoconductivity and magnetoresistance oscillations induced by terahertz radiation in HgTe quantum wells|M. Otteneder,I. A. Dmitriev,S. Candussio,M. L. Savchenko,D. A. Kozlov,V. V. Bel'kov,Z. D. Kvon,N. N. Mikhailov,S. A. Dvoretsky,S. D. Ganichev###
(1544575, 1544576)
 We report on the observation of terahertz radiation induced photoconductivityand of terahertz analog of the microwave-induced resistance oscillations (MIRO)in HgTe-based quantum well (Q<missing VAR>W) structures of different width.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 20, 'nm', 1],[111.0, 5, 'to', 2],[112.0, 20, 'nm', 2]

W
###Sign-alternating photoconductivity and magnetoresistance oscillations induced by terahertz radiation in HgTe quantum wells|M. Otteneder,I. A. Dmitriev,S. Candussio,M. L. Savchenko,D. A. Kozlov,V. V. Bel'kov,Z. D. Kvon,N. N. Mikhailov,S. A. Dvoretsky,S. D. Ganichev###
(1544586, 1544586)
 We report on the observation of terahertz radiation induced photoconductivityand of terahertz analog of the microwave-induced resistance oscillations (MIRO)in HgTe-based quantum well (Q<missing VAR>W) structures of different width.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 20, 'nm', 1],[101.0, 5, 'to', 2],[102.0, 20, 'nm', 2]

O
###Sign-alternating photoconductivity and magnetoresistance oscillations induced by terahertz radiation in HgTe quantum wells|M. Otteneder,I. A. Dmitriev,S. Candussio,M. L. Savchenko,D. A. Kozlov,V. V. Bel'kov,Z. D. Kvon,N. N. Mikhailov,S. A. Dvoretsky,S. D. Ganichev###
(1544603, 1544603)
 The MIRO-likeeffect has been detected in Q<missing VAR>Ws of 20 nm thickness with inverted band structureand a rather low mobility of about 3 times 105 cm2/V s<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 20, 'nm', 0],[84.0, 5, 'to', 1],[85.0, 20, 'nm', 1]

V
###Sign-alternating photoconductivity and magnetoresistance oscillations induced by terahertz radiation in HgTe quantum wells|M. Otteneder,I. A. Dmitriev,S. Candussio,M. L. Savchenko,D. A. Kozlov,V. V. Bel'kov,Z. D. Kvon,N. N. Mikhailov,S. A. Dvoretsky,S. D. Ganichev###
(1544659, 1544659)
 The MIRO-likeeffect has been detected in Q<missing VAR>Ws of 20 nm thickness with inverted band structureand a rather low mobility of about 3 times 105 cm2/V s<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 20, 'nm', 0],[28.0, 5, 'to', 1],[29.0, 20, 'nm', 1]

In
###Sign-alternating photoconductivity and magnetoresistance oscillations induced by terahertz radiation in HgTe quantum wells|M. Otteneder,I. A. Dmitriev,S. Candussio,M. L. Savchenko,D. A. Kozlov,V. V. Bel'kov,Z. D. Kvon,N. N. Mikhailov,S. A. Dvoretsky,S. D. Ganichev###
(1544664, 1544664)
 In a number ofother structures with Q<missing VAR>W widths ranging from 5 to 20 nm and lower mobility weobserved an unconventional non-oscillatory photoconductivity signal whichchanges its sign upon magnetic field increase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 20, 'nm', 1],[23.0, 5, 'to', 0],[24.0, 20, 'nm', 0]

W
###Sign-alternating photoconductivity and magnetoresistance oscillations induced by terahertz radiation in HgTe quantum wells|M. Otteneder,I. A. Dmitriev,S. Candussio,M. L. Savchenko,D. A. Kozlov,V. V. Bel'kov,Z. D. Kvon,N. N. Mikhailov,S. A. Dvoretsky,S. D. Ganichev###
(1544680, 1544680)
 In a number ofother structures with Q<missing VAR>W widths ranging from 5 to 20 nm and lower mobility weobserved an unconventional non-oscillatory photoconductivity signal whichchanges its sign upon magnetic field increase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 20, 'nm', 1],[7.0, 5, 'to', 0],[8.0, 20, 'nm', 0]

In
###Sign-alternating photoconductivity and magnetoresistance oscillations induced by terahertz radiation in HgTe quantum wells|M. Otteneder,I. A. Dmitriev,S. Candussio,M. L. Savchenko,D. A. Kozlov,V. V. Bel'kov,Z. D. Kvon,N. N. Mikhailov,S. A. Dvoretsky,S. D. Ganichev###
(1544786, 1544786)
 In samples having Hallbar and Corbino geometries an increase of the magnetic field resulted in asingle and double change of the sign of the photoresponse, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 20, 'nm', 3],[99.0, 5, 'to', 2],[98.0, 20, 'nm', 2]

Ge
###Giant negative magnetoresistance and kinetic arrest of first-order ferrimagnetic-antiferomagnetic transition in Ge doped Mn$_2$Sb|Vikram Singh,R Rawat,Pallavi Kushwaha###
(1545067, 1545067)
Giant negative magnetoresistance and kinetic arrest of first-order ferrimagnetic-antiferomagnetic transition in Ge doped Mn2Sb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, -10, '%', 2],[232.0, 70, '%', 4],[237.0, 2.5, '%', 4],[271.0, 35, 'K', 5],[399.0, 2.5, '%', 6]

Mn2Sb
###Giant negative magnetoresistance and kinetic arrest of first-order ferrimagnetic-antiferomagnetic transition in Ge doped Mn$_2$Sb|Vikram Singh,R Rawat,Pallavi Kushwaha###
(1545071, 1545073)
Giant negative magnetoresistance and kinetic arrest of first-order ferrimagnetic-antiferomagnetic transition in Ge doped Mn2Sb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, -10, '%', 2],[226.0, 70, '%', 4],[231.0, 2.5, '%', 4],[265.0, 35, 'K', 5],[393.0, 2.5, '%', 6]

Ge
###Giant negative magnetoresistance and kinetic arrest of first-order ferrimagnetic-antiferomagnetic transition in Ge doped Mn$_2$Sb|Vikram Singh,R Rawat,Pallavi Kushwaha###
(1545080, 1545080)
 Effect of Ge substitution on first order ferrimagnetic (FR<missing VAR>I) -antiferromagnetic (AFM) transition in Mn2Sb has been studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, -10, '%', 1],[219.0, 70, '%', 3],[224.0, 2.5, '%', 3],[258.0, 35, 'K', 4],[386.0, 2.5, '%', 5]

F
###Giant negative magnetoresistance and kinetic arrest of first-order ferrimagnetic-antiferomagnetic transition in Ge doped Mn$_2$Sb|Vikram Singh,R Rawat,Pallavi Kushwaha###
(1545093, 1545093)
 Effect of Ge substitution on first order ferrimagnetic (FR<missing VAR>I) -antiferromagnetic (AFM) transition in Mn2Sb has been studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, -10, '%', 1],[206.0, 70, '%', 3],[211.0, 2.5, '%', 3],[245.0, 35, 'K', 4],[373.0, 2.5, '%', 5]

I
###Giant negative magnetoresistance and kinetic arrest of first-order ferrimagnetic-antiferomagnetic transition in Ge doped Mn$_2$Sb|Vikram Singh,R Rawat,Pallavi Kushwaha###
(1545095, 1545095)
 Effect of Ge substitution on first order ferrimagnetic (FR<missing VAR>I) -antiferromagnetic (AFM) transition in Mn2Sb has been studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, -10, '%', 1],[204.0, 70, '%', 3],[209.0, 2.5, '%', 3],[243.0, 35, 'K', 4],[371.0, 2.5, '%', 5]

F
###Giant negative magnetoresistance and kinetic arrest of first-order ferrimagnetic-antiferomagnetic transition in Ge doped Mn$_2$Sb|Vikram Singh,R Rawat,Pallavi Kushwaha###
(1545105, 1545105)
 Effect of Ge substitution on first order ferrimagnetic (FR<missing VAR>I) -antiferromagnetic (AFM) transition in Mn2Sb has been studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, -10, '%', 1],[194.0, 70, '%', 3],[199.0, 2.5, '%', 3],[233.0, 35, 'K', 4],[361.0, 2.5, '%', 5]

Mn2Sb
###Giant negative magnetoresistance and kinetic arrest of first-order ferrimagnetic-antiferomagnetic transition in Ge doped Mn$_2$Sb|Vikram Singh,R Rawat,Pallavi Kushwaha###
(1545113, 1545115)
 Effect of Ge substitution on first order ferrimagnetic (FR<missing VAR>I) -antiferromagnetic (AFM) transition in Mn2Sb has been studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, -10, '%', 1],[184.0, 70, '%', 3],[189.0, 2.5, '%', 3],[223.0, 35, 'K', 4],[351.0, 2.5, '%', 5]

K
###Giant negative magnetoresistance and kinetic arrest of first-order ferrimagnetic-antiferomagnetic transition in Ge doped Mn$_2$Sb|Vikram Singh,R Rawat,Pallavi Kushwaha###
(1545149, 1545149)
 It shows thattransition temperature (Tt) can be tuned between 119K - 271K bysubstituting 2.5-10% Ge at Sb site in Mn2Sb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, -10, '%', 0],[150.0, 70, '%', 2],[155.0, 2.5, '%', 2],[189.0, 35, 'K', 3],[317.0, 2.5, '%', 4]

K
###Giant negative magnetoresistance and kinetic arrest of first-order ferrimagnetic-antiferomagnetic transition in Ge doped Mn$_2$Sb|Vikram Singh,R Rawat,Pallavi Kushwaha###
(1545154, 1545154)
 It shows thattransition temperature (Tt) can be tuned between 119K - 271K bysubstituting 2.5-10% Ge at Sb site in Mn2Sb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, -10, '%', 0],[145.0, 70, '%', 2],[150.0, 2.5, '%', 2],[184.0, 35, 'K', 3],[312.0, 2.5, '%', 4]

Ge
###Giant negative magnetoresistance and kinetic arrest of first-order ferrimagnetic-antiferomagnetic transition in Ge doped Mn$_2$Sb|Vikram Singh,R Rawat,Pallavi Kushwaha###
(1545166, 1545166)
 It shows thattransition temperature (Tt) can be tuned between 119K - 271K bysubstituting 2.5-10% Ge at Sb site in Mn2Sb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, -10, '%', 0],[133.0, 70, '%', 2],[138.0, 2.5, '%', 2],[172.0, 35, 'K', 3],[300.0, 2.5, '%', 4]

Sb
###Giant negative magnetoresistance and kinetic arrest of first-order ferrimagnetic-antiferomagnetic transition in Ge doped Mn$_2$Sb|Vikram Singh,R Rawat,Pallavi Kushwaha###
(1545170, 1545170)
 It shows thattransition temperature (Tt) can be tuned between 119K - 271K bysubstituting 2.5-10% Ge at Sb site in Mn2Sb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, -10, '%', 0],[129.0, 70, '%', 2],[134.0, 2.5, '%', 2],[168.0, 35, 'K', 3],[296.0, 2.5, '%', 4]

Mn2Sb
###Giant negative magnetoresistance and kinetic arrest of first-order ferrimagnetic-antiferomagnetic transition in Ge doped Mn$_2$Sb|Vikram Singh,R Rawat,Pallavi Kushwaha###
(1545176, 1545178)
 It shows thattransition temperature (Tt) can be tuned between 119K - 271K bysubstituting 2.5-10% Ge at Sb site in Mn2Sb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, -10, '%', 0],[121.0, 70, '%', 2],[126.0, 2.5, '%', 2],[160.0, 35, 'K', 3],[288.0, 2.5, '%', 4]

N
###Giant negative magnetoresistance and kinetic arrest of first-order ferrimagnetic-antiferomagnetic transition in Ge doped Mn$_2$Sb|Vikram Singh,R Rawat,Pallavi Kushwaha###
(1545200, 1545200)
 The variation of density ofstate at Fermi level N(Ef) with Ge substitution shows that d<missing VAR>N(E)/dE ispositive at Ef in the AFM<missing VAR> state.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, -10, '%', 1],[99.0, 70, '%', 1],[104.0, 2.5, '%', 1],[138.0, 35, 'K', 2],[266.0, 2.5, '%', 3]

Ge
###Giant negative magnetoresistance and kinetic arrest of first-order ferrimagnetic-antiferomagnetic transition in Ge doped Mn$_2$Sb|Vikram Singh,R Rawat,Pallavi Kushwaha###
(1545208, 1545208)
 The variation of density ofstate at Fermi level N(Ef) with Ge substitution shows that d<missing VAR>N(E)/dE ispositive at Ef in the AFM<missing VAR> state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, -10, '%', 1],[91.0, 70, '%', 1],[96.0, 2.5, '%', 1],[130.0, 35, 'K', 2],[258.0, 2.5, '%', 3]

N
###Giant negative magnetoresistance and kinetic arrest of first-order ferrimagnetic-antiferomagnetic transition in Ge doped Mn$_2$Sb|Vikram Singh,R Rawat,Pallavi Kushwaha###
(1545217, 1545217)
 The variation of density ofstate at Fermi level N(Ef) with Ge substitution shows that d<missing VAR>N(E)/dE ispositive at Ef in the AFM<missing VAR> state.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, -10, '%', 1],[82.0, 70, '%', 1],[87.0, 2.5, '%', 1],[121.0, 35, 'K', 2],[249.0, 2.5, '%', 3]

F
###Giant negative magnetoresistance and kinetic arrest of first-order ferrimagnetic-antiferomagnetic transition in Ge doped Mn$_2$Sb|Vikram Singh,R Rawat,Pallavi Kushwaha###
(1545240, 1545240)
 The variation of density ofstate at Fermi level N(Ef) with Ge substitution shows that d<missing VAR>N(E)/dE ispositive at Ef in the AFM<missing VAR> state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, -10, '%', 1],[59.0, 70, '%', 1],[64.0, 2.5, '%', 1],[98.0, 35, 'K', 2],[226.0, 2.5, '%', 3]

F
###Giant negative magnetoresistance and kinetic arrest of first-order ferrimagnetic-antiferomagnetic transition in Ge doped Mn$_2$Sb|Vikram Singh,R Rawat,Pallavi Kushwaha###
(1545319, 1545319)
 Ourresults show that FR<missing VAR>I to AFM<missing VAR> transformation during cooling stops around 35 K,even though it remains incomplete.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, -10, '%', 3],[20.0, 70, '%', 1],[15.0, 2.5, '%', 1],[19.0, 35, 'K', 0],[147.0, 2.5, '%', 1]

I
###Giant negative magnetoresistance and kinetic arrest of first-order ferrimagnetic-antiferomagnetic transition in Ge doped Mn$_2$Sb|Vikram Singh,R Rawat,Pallavi Kushwaha###
(1545321, 1545321)
 Ourresults show that FR<missing VAR>I to AFM<missing VAR> transformation during cooling stops around 35 K,even though it remains incomplete.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[159.0, -10, '%', 3],[22.0, 70, '%', 1],[17.0, 2.5, '%', 1],[17.0, 35, 'K', 0],[145.0, 2.5, '%', 1]

F
###Giant negative magnetoresistance and kinetic arrest of first-order ferrimagnetic-antiferomagnetic transition in Ge doped Mn$_2$Sb|Vikram Singh,R Rawat,Pallavi Kushwaha###
(1545326, 1545326)
 Ourresults show that FR<missing VAR>I to AFM<missing VAR> transformation during cooling stops around 35 K,even though it remains incomplete.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, -10, '%', 3],[27.0, 70, '%', 1],[22.0, 2.5, '%', 1],[12.0, 35, 'K', 0],[140.0, 2.5, '%', 1]

W
###Giant negative magnetoresistance and kinetic arrest of first-order ferrimagnetic-antiferomagnetic transition in Ge doped Mn$_2$Sb|Vikram Singh,R Rawat,Pallavi Kushwaha###
(1545407, 1545407)
 It along with non-monotonic variation oflower critical field, open loop in isothermal MR and increasing difference inzero field cooled warming (Z<missing VAR>FCW) and field cooled warming (FCW) resistivitywith increasing magnetic field shows that FR<missing VAR>I to AFM<missing VAR> transition is kineticallyarrested in the case of 2.5% Ge substitution.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[245.0, -10, '%', 4],[108.0, 70, '%', 2],[103.0, 2.5, '%', 2],[69.0, 35, 'K', 1],[59.0, 2.5, '%', 0]

(FCW)
###Giant negative magnetoresistance and kinetic arrest of first-order ferrimagnetic-antiferomagnetic transition in Ge doped Mn$_2$Sb|Vikram Singh,R Rawat,Pallavi Kushwaha###
(1545418, 1545422)
 It along with non-monotonic variation oflower critical field, open loop in isothermal MR and increasing difference inzero field cooled warming (Z<missing VAR>FCW) and field cooled warming (FCW) resistivitywith increasing magnetic field shows that FR<missing VAR>I to AFM<missing VAR> transition is kineticallyarrested in the case of 2.5% Ge substitution.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[256.0, -10, '%', 4],[119.0, 70, '%', 2],[114.0, 2.5, '%', 2],[80.0, 35, 'K', 1],[44.0, 2.5, '%', 0]

F
###Giant negative magnetoresistance and kinetic arrest of first-order ferrimagnetic-antiferomagnetic transition in Ge doped Mn$_2$Sb|Vikram Singh,R Rawat,Pallavi Kushwaha###
(1545439, 1545439)
 It along with non-monotonic variation oflower critical field, open loop in isothermal MR and increasing difference inzero field cooled warming (Z<missing VAR>FCW) and field cooled warming (FCW) resistivitywith increasing magnetic field shows that FR<missing VAR>I to AFM<missing VAR> transition is kineticallyarrested in the case of 2.5% Ge substitution.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[277.0, -10, '%', 4],[140.0, 70, '%', 2],[135.0, 2.5, '%', 2],[101.0, 35, 'K', 1],[27.0, 2.5, '%', 0]

I
###Giant negative magnetoresistance and kinetic arrest of first-order ferrimagnetic-antiferomagnetic transition in Ge doped Mn$_2$Sb|Vikram Singh,R Rawat,Pallavi Kushwaha###
(1545441, 1545441)
 It along with non-monotonic variation oflower critical field, open loop in isothermal MR and increasing difference inzero field cooled warming (Z<missing VAR>FCW) and field cooled warming (FCW) resistivitywith increasing magnetic field shows that FR<missing VAR>I to AFM<missing VAR> transition is kineticallyarrested in the case of 2.5% Ge substitution.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[279.0, -10, '%', 4],[142.0, 70, '%', 2],[137.0, 2.5, '%', 2],[103.0, 35, 'K', 1],[25.0, 2.5, '%', 0]

F
###Giant negative magnetoresistance and kinetic arrest of first-order ferrimagnetic-antiferomagnetic transition in Ge doped Mn$_2$Sb|Vikram Singh,R Rawat,Pallavi Kushwaha###
(1545446, 1545446)
 It along with non-monotonic variation oflower critical field, open loop in isothermal MR and increasing difference inzero field cooled warming (Z<missing VAR>FCW) and field cooled warming (FCW) resistivitywith increasing magnetic field shows that FR<missing VAR>I to AFM<missing VAR> transition is kineticallyarrested in the case of 2.5% Ge substitution.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[284.0, -10, '%', 4],[147.0, 70, '%', 2],[142.0, 2.5, '%', 2],[108.0, 35, 'K', 1],[20.0, 2.5, '%', 0]

Ge
###Giant negative magnetoresistance and kinetic arrest of first-order ferrimagnetic-antiferomagnetic transition in Ge doped Mn$_2$Sb|Vikram Singh,R Rawat,Pallavi Kushwaha###
(1545469, 1545469)
 It along with non-monotonic variation oflower critical field, open loop in isothermal MR and increasing difference inzero field cooled warming (Z<missing VAR>FCW) and field cooled warming (FCW) resistivitywith increasing magnetic field shows that FR<missing VAR>I to AFM<missing VAR> transition is kineticallyarrested in the case of 2.5% Ge substitution.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[307.0, -10, '%', 4],[170.0, 70, '%', 2],[165.0, 2.5, '%', 2],[131.0, 35, 'K', 1],[3.0, 2.5, '%', 0]

Fe2O3
###Anisotropies and magnetic phase transitions in insulating antiferromagnets determined by a Spin-Hall magnetoresistance probe|Romain Lebrun,Andrew Ross,Olena Gomonay,Scott Bender,Lorenzo Baldrati,Florian Kronast,Alireza Qaiumzadeh,Jairo Sinova,Arne Brataas,Rembert Duine,Mathias Kläui###
(1545560, 1545563)
 We demonstrate that we can determine the antiferromagnetic anisotropies andthe bulk Dzyaloshinskii-Moriya fields of the insulating iron oxide hematite,alpha-Fe2O3, using a surface sensitive spin-Hall magnetoresistance (SMR)technique.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Anisotropies and magnetic phase transitions in insulating antiferromagnets determined by a Spin-Hall magnetoresistance probe|Romain Lebrun,Andrew Ross,Olena Gomonay,Scott Bender,Lorenzo Baldrati,Florian Kronast,Alireza Qaiumzadeh,Jairo Sinova,Arne Brataas,Rembert Duine,Mathias Kläui###
(1545581, 1545581)
 We demonstrate that we can determine the antiferromagnetic anisotropies andthe bulk Dzyaloshinskii-Moriya fields of the insulating iron oxide hematite,alpha-Fe2O3, using a surface sensitive spin-Hall magnetoresistance (SMR)technique.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Anisotropies and magnetic phase transitions in insulating antiferromagnets determined by a Spin-Hall magnetoresistance probe|Romain Lebrun,Andrew Ross,Olena Gomonay,Scott Bender,Lorenzo Baldrati,Florian Kronast,Alireza Qaiumzadeh,Jairo Sinova,Arne Brataas,Rembert Duine,Mathias Kläui###
(1545608, 1545608)
 We develop an analytical model that in combination with SMRmeasurements, allow for the identification of the material parameters of thisprototypical antiferromagnet over a wide range of temperatures and magneticfield values.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Anisotropies and magnetic phase transitions in insulating antiferromagnets determined by a Spin-Hall magnetoresistance probe|Romain Lebrun,Andrew Ross,Olena Gomonay,Scott Bender,Lorenzo Baldrati,Florian Kronast,Alireza Qaiumzadeh,Jairo Sinova,Arne Brataas,Rembert Duine,Mathias Kläui###
(1545683, 1545683)
 Using devices with different orientations, we demonstrate thatthe SMR response strongly depends on the direction of the charge current withrespect to the magneto-crystalline anisotropies axis.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Anisotropies and magnetic phase transitions in insulating antiferromagnets determined by a Spin-Hall magnetoresistance probe|Romain Lebrun,Andrew Ross,Olena Gomonay,Scott Bender,Lorenzo Baldrati,Florian Kronast,Alireza Qaiumzadeh,Jairo Sinova,Arne Brataas,Rembert Duine,Mathias Kläui###
(1545795, 1545795)
 We observe that the electrical response is dominated bythe orientation of the antiferromagnetic Neel order parameter, rather than bythe emergent weak magnetic moment.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Anisotropies and magnetic phase transitions in insulating antiferromagnets determined by a Spin-Hall magnetoresistance probe|Romain Lebrun,Andrew Ross,Olena Gomonay,Scott Bender,Lorenzo Baldrati,Florian Kronast,Alireza Qaiumzadeh,Jairo Sinova,Arne Brataas,Rembert Duine,Mathias Kläui###
(1545840, 1545840)
 Our results highlight that the surfacesensitivity of the SMR allows accessing the magnetic anisotropies ofantiferromagnetic crystals and in particular thin films where other methods todetermine anisotropies such as bulk-sensitive magnetic susceptibilitymeasurements do not provide sufficient sensitivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

U(Ru0.92Rh0.08)2Si2
###Field-induced phases in a heavy-fermion U(Ru$_{0.92}$Rh$_{0.08}$)$_{2}$Si$_{2}$ single crystal|K. Prokes,T. Förster,Y. -K. Huang,J. A. Mydosh###
(1545932, 1545941)
Field-induced phases in a heavy-fermion U(Ru0.92Rh0.08)2Si2 single crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.368,0.032,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0
[122.0, 21.6, 'T', 2],[133.0, 37.9, 'T', 2],[144.0, 38.25, 'T', 2],[263.0, 3, ',', 4],[423.0, 80, 'K', 8]

H
###Field-induced phases in a heavy-fermion U(Ru$_{0.92}$Rh$_{0.08}$)$_{2}$Si$_{2}$ single crystal|K. Prokes,T. Förster,Y. -K. Huang,J. A. Mydosh###
(1546059, 1546059)
 Ourstudy, that combines high-field magnetization and electrical resistivitymeasurements, shows for fields applied along the c<missing VAR>-axis direction threefield-induced magnetic phase transitions at mu0 Hc<missing VAR>1  21.60 T,mu0 Hc<missing VAR>2  37.90 T and mu0 Hc<missing VAR>3  38.25 T, respectively.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 21.6, 'T', 0],[15.0, 37.9, 'T', 0],[26.0, 38.25, 'T', 0],[145.0, 3, ',', 2],[305.0, 80, 'K', 6]

H
###Field-induced phases in a heavy-fermion U(Ru$_{0.92}$Rh$_{0.08}$)$_{2}$Si$_{2}$ single crystal|K. Prokes,T. Förster,Y. -K. Huang,J. A. Mydosh###
(1546070, 1546070)
 Ourstudy, that combines high-field magnetization and electrical resistivitymeasurements, shows for fields applied along the c<missing VAR>-axis direction threefield-induced magnetic phase transitions at mu0 Hc<missing VAR>1  21.60 T,mu0 Hc<missing VAR>2  37.90 T and mu0 Hc<missing VAR>3  38.25 T, respectively.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 21.6, 'T', 0],[4.0, 37.9, 'T', 0],[15.0, 38.25, 'T', 0],[134.0, 3, ',', 2],[294.0, 80, 'K', 6]

H
###Field-induced phases in a heavy-fermion U(Ru$_{0.92}$Rh$_{0.08}$)$_{2}$Si$_{2}$ single crystal|K. Prokes,T. Förster,Y. -K. Huang,J. A. Mydosh###
(1546081, 1546081)
 Ourstudy, that combines high-field magnetization and electrical resistivitymeasurements, shows for fields applied along the c<missing VAR>-axis direction threefield-induced magnetic phase transitions at mu0 Hc<missing VAR>1  21.60 T,mu0 Hc<missing VAR>2  37.90 T and mu0 Hc<missing VAR>3  38.25 T, respectively.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 21.6, 'T', 0],[7.0, 37.9, 'T', 0],[4.0, 38.25, 'T', 0],[123.0, 3, ',', 2],[283.0, 80, 'K', 6]

In
###Field-induced phases in a heavy-fermion U(Ru$_{0.92}$Rh$_{0.08}$)$_{2}$Si$_{2}$ single crystal|K. Prokes,T. Förster,Y. -K. Huang,J. A. Mydosh###
(1546091, 1546091)
 Inagreement with a microscopic up-up-down arrangement of the U magnetic momentsthe phase above Hc<missing VAR>1 has a magnetization of about one third of thesaturated value.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 21.6, 'T', 1],[17.0, 37.9, 'T', 1],[6.0, 38.25, 'T', 1],[113.0, 3, ',', 1],[273.0, 80, 'K', 5]

U
###Field-induced phases in a heavy-fermion U(Ru$_{0.92}$Rh$_{0.08}$)$_{2}$Si$_{2}$ single crystal|K. Prokes,T. Förster,Y. -K. Huang,J. A. Mydosh###
(1546114, 1546114)
 Inagreement with a microscopic up-up-down arrangement of the U magnetic momentsthe phase above Hc<missing VAR>1 has a magnetization of about one third of thesaturated value.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 21.6, 'T', 1],[40.0, 37.9, 'T', 1],[29.0, 38.25, 'T', 1],[90.0, 3, ',', 1],[250.0, 80, 'K', 5]

H
###Field-induced phases in a heavy-fermion U(Ru$_{0.92}$Rh$_{0.08}$)$_{2}$Si$_{2}$ single crystal|K. Prokes,T. Förster,Y. -K. Huang,J. A. Mydosh###
(1546127, 1546127)
 Inagreement with a microscopic up-up-down arrangement of the U magnetic momentsthe phase above Hc<missing VAR>1 has a magnetization of about one third of thesaturated value.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 21.6, 'T', 1],[53.0, 37.9, 'T', 1],[42.0, 38.25, 'T', 1],[77.0, 3, ',', 1],[237.0, 80, 'K', 5]

In
###Field-induced phases in a heavy-fermion U(Ru$_{0.92}$Rh$_{0.08}$)$_{2}$Si$_{2}$ single crystal|K. Prokes,T. Förster,Y. -K. Huang,J. A. Mydosh###
(1546155, 1546155)
 In contrast the phase between Hc<missing VAR>2 and Hc<missing VAR>3 has amagnetization that is a factor of two lower than above the Hc<missing VAR>3, where apolarized Fermi-liquid state with a saturated moment Ms approx 2.1muB/U is realized.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 21.6, 'T', 2],[81.0, 37.9, 'T', 2],[70.0, 38.25, 'T', 2],[49.0, 3, ',', 0],[209.0, 80, 'K', 4]

H
###Field-induced phases in a heavy-fermion U(Ru$_{0.92}$Rh$_{0.08}$)$_{2}$Si$_{2}$ single crystal|K. Prokes,T. Förster,Y. -K. Huang,J. A. Mydosh###
(1546165, 1546165)
 In contrast the phase between Hc<missing VAR>2 and Hc<missing VAR>3 has amagnetization that is a factor of two lower than above the Hc<missing VAR>3, where apolarized Fermi-liquid state with a saturated moment Ms approx 2.1muB/U is realized.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 21.6, 'T', 2],[91.0, 37.9, 'T', 2],[80.0, 38.25, 'T', 2],[39.0, 3, ',', 0],[199.0, 80, 'K', 4]

H
###Field-induced phases in a heavy-fermion U(Ru$_{0.92}$Rh$_{0.08}$)$_{2}$Si$_{2}$ single crystal|K. Prokes,T. Förster,Y. -K. Huang,J. A. Mydosh###
(1546171, 1546171)
 In contrast the phase between Hc<missing VAR>2 and Hc<missing VAR>3 has amagnetization that is a factor of two lower than above the Hc<missing VAR>3, where apolarized Fermi-liquid state with a saturated moment Ms approx 2.1muB/U is realized.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 21.6, 'T', 2],[97.0, 37.9, 'T', 2],[86.0, 38.25, 'T', 2],[33.0, 3, ',', 0],[193.0, 80, 'K', 4]

H
###Field-induced phases in a heavy-fermion U(Ru$_{0.92}$Rh$_{0.08}$)$_{2}$Si$_{2}$ single crystal|K. Prokes,T. Förster,Y. -K. Huang,J. A. Mydosh###
(1546202, 1546202)
 In contrast the phase between Hc<missing VAR>2 and Hc<missing VAR>3 has amagnetization that is a factor of two lower than above the Hc<missing VAR>3, where apolarized Fermi-liquid state with a saturated moment Ms approx 2.1muB/U is realized.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 21.6, 'T', 2],[128.0, 37.9, 'T', 2],[117.0, 38.25, 'T', 2],[2.0, 3, ',', 0],[162.0, 80, 'K', 4]

B/U
###Field-induced phases in a heavy-fermion U(Ru$_{0.92}$Rh$_{0.08}$)$_{2}$Si$_{2}$ single crystal|K. Prokes,T. Förster,Y. -K. Huang,J. A. Mydosh###
(1546237, 1546239)
 In contrast the phase between Hc<missing VAR>2 and Hc<missing VAR>3 has amagnetization that is a factor of two lower than above the Hc<missing VAR>3, where apolarized Fermi-liquid state with a saturated moment Ms approx 2.1muB/U is realized.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[174.0, 21.6, 'T', 2],[163.0, 37.9, 'T', 2],[152.0, 38.25, 'T', 2],[33.0, 3, ',', 0],[125.0, 80, 'K', 4]

H
###Field-induced phases in a heavy-fermion U(Ru$_{0.92}$Rh$_{0.08}$)$_{2}$Si$_{2}$ single crystal|K. Prokes,T. Förster,Y. -K. Huang,J. A. Mydosh###
(1546290, 1546290)
 Most notably, the phasebetween Hc<missing VAR>1 and Hc<missing VAR>2 exhibits substantially larger values.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[227.0, 21.6, 'T', 4],[216.0, 37.9, 'T', 4],[205.0, 38.25, 'T', 4],[86.0, 3, ',', 2],[74.0, 80, 'K', 2]

H
###Field-induced phases in a heavy-fermion U(Ru$_{0.92}$Rh$_{0.08}$)$_{2}$Si$_{2}$ single crystal|K. Prokes,T. Förster,Y. -K. Huang,J. A. Mydosh###
(1546296, 1546296)
 Most notably, the phasebetween Hc<missing VAR>1 and Hc<missing VAR>2 exhibits substantially larger values.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[233.0, 21.6, 'T', 4],[222.0, 37.9, 'T', 4],[211.0, 38.25, 'T', 4],[92.0, 3, ',', 2],[68.0, 80, 'K', 2]

As
###Field-induced phases in a heavy-fermion U(Ru$_{0.92}$Rh$_{0.08}$)$_{2}$Si$_{2}$ single crystal|K. Prokes,T. Förster,Y. -K. Huang,J. A. Mydosh###
(1546309, 1546309)
 As thetemperature increases, transitions smear out and disappear above approx 15K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[246.0, 21.6, 'T', 5],[235.0, 37.9, 'T', 5],[224.0, 38.25, 'T', 5],[105.0, 3, ',', 3],[55.0, 80, 'K', 1]

K
###Field-induced phases in a heavy-fermion U(Ru$_{0.92}$Rh$_{0.08}$)$_{2}$Si$_{2}$ single crystal|K. Prokes,T. Förster,Y. -K. Huang,J. A. Mydosh###
(1546336, 1546336)
 As thetemperature increases, transitions smear out and disappear above approx 15K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[273.0, 21.6, 'T', 5],[262.0, 37.9, 'T', 5],[251.0, 38.25, 'T', 5],[132.0, 3, ',', 3],[28.0, 80, 'K', 1]

F
###A Piezoelectric, Strain-Controlled Antiferromagnetic Memory Insensitive to Magnetic Fields|Han Yan,Zexin Feng,Shunli Shang,Xiaoning Wang,Zexiang Hu,Jinhua Wang,Zengwei Zhu,Hui Wang,Zuhuang Chen,Hui Hua,Wenkuo Lu,Jingmin Wang,Peixin Qin,Huixin Guo,Xiaorong Zhou,Zhaoguogang Leng,Zikui Liu,Chengbao Jiang,Michael Coey,Zhiqi Liu###
(1546458, 1546458)
 Spintronic devices based on antiferromagnetic (AFM) materials hold thepromise of fast switching speeds and robustness against magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[315.0, 60, 'T', 4],[378.0, 11.2, '%', 7]

F
###A Piezoelectric, Strain-Controlled Antiferromagnetic Memory Insensitive to Magnetic Fields|Han Yan,Zexin Feng,Shunli Shang,Xiaoning Wang,Zexiang Hu,Jinhua Wang,Zengwei Zhu,Hui Wang,Zuhuang Chen,Hui Hua,Wenkuo Lu,Jingmin Wang,Peixin Qin,Huixin Guo,Xiaorong Zhou,Zhaoguogang Leng,Zikui Liu,Chengbao Jiang,Michael Coey,Zhiqi Liu###
(1546520, 1546520)
Different device concepts have been predicted and experimentally demonstrated,such as low-temperature AFM<missing VAR> tunnel junctions that operate as spin-valves, orroom-temperature AFM<missing VAR> memory, for which either thermal heating in combinationwith magnetic fields, or Neel spin-orbit torque is used for the informationwriting process.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[253.0, 60, 'T', 3],[316.0, 11.2, '%', 6]

F
###A Piezoelectric, Strain-Controlled Antiferromagnetic Memory Insensitive to Magnetic Fields|Han Yan,Zexin Feng,Shunli Shang,Xiaoning Wang,Zexiang Hu,Jinhua Wang,Zengwei Zhu,Hui Wang,Zuhuang Chen,Hui Hua,Wenkuo Lu,Jingmin Wang,Peixin Qin,Huixin Guo,Xiaorong Zhou,Zhaoguogang Leng,Zikui Liu,Chengbao Jiang,Michael Coey,Zhiqi Liu###
(1546546, 1546546)
Different device concepts have been predicted and experimentally demonstrated,such as low-temperature AFM<missing VAR> tunnel junctions that operate as spin-valves, orroom-temperature AFM<missing VAR> memory, for which either thermal heating in combinationwith magnetic fields, or Neel spin-orbit torque is used for the informationwriting process.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[227.0, 60, 'T', 3],[290.0, 11.2, '%', 6]

N
###A Piezoelectric, Strain-Controlled Antiferromagnetic Memory Insensitive to Magnetic Fields|Han Yan,Zexin Feng,Shunli Shang,Xiaoning Wang,Zexiang Hu,Jinhua Wang,Zengwei Zhu,Hui Wang,Zuhuang Chen,Hui Hua,Wenkuo Lu,Jingmin Wang,Peixin Qin,Huixin Guo,Xiaorong Zhou,Zhaoguogang Leng,Zikui Liu,Chengbao Jiang,Michael Coey,Zhiqi Liu###
(1546576, 1546576)
Different device concepts have been predicted and experimentally demonstrated,such as low-temperature AFM<missing VAR> tunnel junctions that operate as spin-valves, orroom-temperature AFM<missing VAR> memory, for which either thermal heating in combinationwith magnetic fields, or Neel spin-orbit torque is used for the informationwriting process.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[197.0, 60, 'T', 3],[260.0, 11.2, '%', 6]

N
###A Piezoelectric, Strain-Controlled Antiferromagnetic Memory Insensitive to Magnetic Fields|Han Yan,Zexin Feng,Shunli Shang,Xiaoning Wang,Zexiang Hu,Jinhua Wang,Zengwei Zhu,Hui Wang,Zuhuang Chen,Hui Hua,Wenkuo Lu,Jingmin Wang,Peixin Qin,Huixin Guo,Xiaorong Zhou,Zhaoguogang Leng,Zikui Liu,Chengbao Jiang,Michael Coey,Zhiqi Liu###
(1546707, 1546707)
 Here, we combine the two material classesto explore changes of the resistance of the high-Neel-temperatureantiferromagnet MnPt induced by piezoelectric strain.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 60, 'T', 1],[129.0, 11.2, '%', 4]

MnPt
###A Piezoelectric, Strain-Controlled Antiferromagnetic Memory Insensitive to Magnetic Fields|Han Yan,Zexin Feng,Shunli Shang,Xiaoning Wang,Zexiang Hu,Jinhua Wang,Zengwei Zhu,Hui Wang,Zuhuang Chen,Hui Hua,Wenkuo Lu,Jingmin Wang,Peixin Qin,Huixin Guo,Xiaorong Zhou,Zhaoguogang Leng,Zikui Liu,Chengbao Jiang,Michael Coey,Zhiqi Liu###
(1546715, 1546716)
 Here, we combine the two material classesto explore changes of the resistance of the high-Neel-temperatureantiferromagnet MnPt induced by piezoelectric strain.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 60, 'T', 1],[120.0, 11.2, '%', 4]

F
###A Piezoelectric, Strain-Controlled Antiferromagnetic Memory Insensitive to Magnetic Fields|Han Yan,Zexin Feng,Shunli Shang,Xiaoning Wang,Zexiang Hu,Jinhua Wang,Zengwei Zhu,Hui Wang,Zuhuang Chen,Hui Hua,Wenkuo Lu,Jingmin Wang,Peixin Qin,Huixin Guo,Xiaorong Zhou,Zhaoguogang Leng,Zikui Liu,Chengbao Jiang,Michael Coey,Zhiqi Liu###
(1546864, 1546864)
 Overall, we demonstrate apiezoelectric, strain-controlled AFM<missing VAR> memory which is fully operational instrong magnetic fields and has potential for low-energy and high-density memoryapplications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 60, 'T', 4],[28.0, 11.2, '%', 1]

S
###Inducing out-of-plane precession of magnetization for microwave assisted magnetic recording using an oscillating polarizer in spin torque oscillator|W. Zhou,H. Sepehri-Amin,T. Taniguchi,S. Tamaru,Y. Sakuraba,S. Kasai,H. Kubota,K. Hono###
(1546985, 1546985)
 We investigated the dynamics of a novel design of spin torque oscillator(ST<missing VAR>O) for microwave assisted magnetic recording.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Inducing out-of-plane precession of magnetization for microwave assisted magnetic recording using an oscillating polarizer in spin torque oscillator|W. Zhou,H. Sepehri-Amin,T. Taniguchi,S. Tamaru,Y. Sakuraba,S. Kasai,H. Kubota,K. Hono###
(1546987, 1546987)
 We investigated the dynamics of a novel design of spin torque oscillator(ST<missing VAR>O) for microwave assisted magnetic recording.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni80Fe20
###Inducing out-of-plane precession of magnetization for microwave assisted magnetic recording using an oscillating polarizer in spin torque oscillator|W. Zhou,H. Sepehri-Amin,T. Taniguchi,S. Tamaru,Y. Sakuraba,S. Kasai,H. Kubota,K. Hono###
(1547003, 1547006)
 Using Ni80Fe20(NiFe) as the polarizer and Fe67Co33 (FeCo) as the field generatinglayer, we experimentally observed the magnetization reversal of NiFe, followedby multiple signals in the power spectra as the bias voltage increased.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(NiFe)
###Inducing out-of-plane precession of magnetization for microwave assisted magnetic recording using an oscillating polarizer in spin torque oscillator|W. Zhou,H. Sepehri-Amin,T. Taniguchi,S. Tamaru,Y. Sakuraba,S. Kasai,H. Kubota,K. Hono###
(1547009, 1547012)
 Using Ni80Fe20(NiFe) as the polarizer and Fe67Co33 (FeCo) as the field generatinglayer, we experimentally observed the magnetization reversal of NiFe, followedby multiple signals in the power spectra as the bias voltage increased.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe67Co33
###Inducing out-of-plane precession of magnetization for microwave assisted magnetic recording using an oscillating polarizer in spin torque oscillator|W. Zhou,H. Sepehri-Amin,T. Taniguchi,S. Tamaru,Y. Sakuraba,S. Kasai,H. Kubota,K. Hono###
(1547022, 1547025)
 Using Ni80Fe20(NiFe) as the polarizer and Fe67Co33 (FeCo) as the field generatinglayer, we experimentally observed the magnetization reversal of NiFe, followedby multiple signals in the power spectra as the bias voltage increased.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.67,0.33,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(FeCo)
###Inducing out-of-plane precession of magnetization for microwave assisted magnetic recording using an oscillating polarizer in spin torque oscillator|W. Zhou,H. Sepehri-Amin,T. Taniguchi,S. Tamaru,Y. Sakuraba,S. Kasai,H. Kubota,K. Hono###
(1547027, 1547030)
 Using Ni80Fe20(NiFe) as the polarizer and Fe67Co33 (FeCo) as the field generatinglayer, we experimentally observed the magnetization reversal of NiFe, followedby multiple signals in the power spectra as the bias voltage increased.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiFe
###Inducing out-of-plane precession of magnetization for microwave assisted magnetic recording using an oscillating polarizer in spin torque oscillator|W. Zhou,H. Sepehri-Amin,T. Taniguchi,S. Tamaru,Y. Sakuraba,S. Kasai,H. Kubota,K. Hono###
(1547058, 1547059)
 Using Ni80Fe20(NiFe) as the polarizer and Fe67Co33 (FeCo) as the field generatinglayer, we experimentally observed the magnetization reversal of NiFe, followedby multiple signals in the power spectra as the bias voltage increased.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(OPP)
###Inducing out-of-plane precession of magnetization for microwave assisted magnetic recording using an oscillating polarizer in spin torque oscillator|W. Zhou,H. Sepehri-Amin,T. Taniguchi,S. Tamaru,Y. Sakuraba,S. Kasai,H. Kubota,K. Hono###
(1547107, 1547111)
 Thesignals reflected the out-of-plane precession (OPP) mode oscillation of bothFeCo and NiFe, as well as the magnetoresistance effect of the ST<missing VAR>O device, whichhad the frequency equal to the difference between the oscillation frequency ofNiFe and FeCo.
Featurization successful!
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeCo
###Inducing out-of-plane precession of magnetization for microwave assisted magnetic recording using an oscillating polarizer in spin torque oscillator|W. Zhou,H. Sepehri-Amin,T. Taniguchi,S. Tamaru,Y. Sakuraba,S. Kasai,H. Kubota,K. Hono###
(1547122, 1547123)
 Thesignals reflected the out-of-plane precession (OPP) mode oscillation of bothFeCo and NiFe, as well as the magnetoresistance effect of the ST<missing VAR>O device, whichhad the frequency equal to the difference between the oscillation frequency ofNiFe and FeCo.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiFe
###Inducing out-of-plane precession of magnetization for microwave assisted magnetic recording using an oscillating polarizer in spin torque oscillator|W. Zhou,H. Sepehri-Amin,T. Taniguchi,S. Tamaru,Y. Sakuraba,S. Kasai,H. Kubota,K. Hono###
(1547127, 1547128)
 Thesignals reflected the out-of-plane precession (OPP) mode oscillation of bothFeCo and NiFe, as well as the magnetoresistance effect of the ST<missing VAR>O device, whichhad the frequency equal to the difference between the oscillation frequency ofNiFe and FeCo.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Inducing out-of-plane precession of magnetization for microwave assisted magnetic recording using an oscillating polarizer in spin torque oscillator|W. Zhou,H. Sepehri-Amin,T. Taniguchi,S. Tamaru,Y. Sakuraba,S. Kasai,H. Kubota,K. Hono###
(1547147, 1547147)
 Thesignals reflected the out-of-plane precession (OPP) mode oscillation of bothFeCo and NiFe, as well as the magnetoresistance effect of the ST<missing VAR>O device, whichhad the frequency equal to the difference between the oscillation frequency ofNiFe and FeCo.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Inducing out-of-plane precession of magnetization for microwave assisted magnetic recording using an oscillating polarizer in spin torque oscillator|W. Zhou,H. Sepehri-Amin,T. Taniguchi,S. Tamaru,Y. Sakuraba,S. Kasai,H. Kubota,K. Hono###
(1547149, 1547149)
 Thesignals reflected the out-of-plane precession (OPP) mode oscillation of bothFeCo and NiFe, as well as the magnetoresistance effect of the ST<missing VAR>O device, whichhad the frequency equal to the difference between the oscillation frequency ofNiFe and FeCo.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiFe
###Inducing out-of-plane precession of magnetization for microwave assisted magnetic recording using an oscillating polarizer in spin torque oscillator|W. Zhou,H. Sepehri-Amin,T. Taniguchi,S. Tamaru,Y. Sakuraba,S. Kasai,H. Kubota,K. Hono###
(1547182, 1547183)
 Thesignals reflected the out-of-plane precession (OPP) mode oscillation of bothFeCo and NiFe, as well as the magnetoresistance effect of the ST<missing VAR>O device, whichhad the frequency equal to the difference between the oscillation frequency ofNiFe and FeCo.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeCo
###Inducing out-of-plane precession of magnetization for microwave assisted magnetic recording using an oscillating polarizer in spin torque oscillator|W. Zhou,H. Sepehri-Amin,T. Taniguchi,S. Tamaru,Y. Sakuraba,S. Kasai,H. Kubota,K. Hono###
(1547187, 1547188)
 Thesignals reflected the out-of-plane precession (OPP) mode oscillation of bothFeCo and NiFe, as well as the magnetoresistance effect of the ST<missing VAR>O device, whichhad the frequency equal to the difference between the oscillation frequency ofNiFe and FeCo.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Inducing out-of-plane precession of magnetization for microwave assisted magnetic recording using an oscillating polarizer in spin torque oscillator|W. Zhou,H. Sepehri-Amin,T. Taniguchi,S. Tamaru,Y. Sakuraba,S. Kasai,H. Kubota,K. Hono###
(1547206, 1547206)
 Inaddition to the merit of realizing the OPP mode oscillation with a simple andthin structure suitable for a narrow gap recording head, the experimentalresults using this design suggested that a large cone angle of sim70circ for the OPP mode oscillation of FeCo was achieved, which wasestimated based on the macrospin model.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OPP
###Inducing out-of-plane precession of magnetization for microwave assisted magnetic recording using an oscillating polarizer in spin torque oscillator|W. Zhou,H. Sepehri-Amin,T. Taniguchi,S. Tamaru,Y. Sakuraba,S. Kasai,H. Kubota,K. Hono###
(1547223, 1547225)
 Inaddition to the merit of realizing the OPP mode oscillation with a simple andthin structure suitable for a narrow gap recording head, the experimentalresults using this design suggested that a large cone angle of sim70circ for the OPP mode oscillation of FeCo was achieved, which wasestimated based on the macrospin model.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OPP
###Inducing out-of-plane precession of magnetization for microwave assisted magnetic recording using an oscillating polarizer in spin torque oscillator|W. Zhou,H. Sepehri-Amin,T. Taniguchi,S. Tamaru,Y. Sakuraba,S. Kasai,H. Kubota,K. Hono###
(1547296, 1547298)
 Inaddition to the merit of realizing the OPP mode oscillation with a simple andthin structure suitable for a narrow gap recording head, the experimentalresults using this design suggested that a large cone angle of sim70circ for the OPP mode oscillation of FeCo was achieved, which wasestimated based on the macrospin model.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeCo
###Inducing out-of-plane precession of magnetization for microwave assisted magnetic recording using an oscillating polarizer in spin torque oscillator|W. Zhou,H. Sepehri-Amin,T. Taniguchi,S. Tamaru,Y. Sakuraba,S. Kasai,H. Kubota,K. Hono###
(1547306, 1547307)
 Inaddition to the merit of realizing the OPP mode oscillation with a simple andthin structure suitable for a narrow gap recording head, the experimentalresults using this design suggested that a large cone angle of sim70circ for the OPP mode oscillation of FeCo was achieved, which wasestimated based on the macrospin model.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pd
###Unoccupied surface and interface states in Pd thin films deposited on Fe/Ir(111) surface|Mohammed Bouhassoune,Imara L. Fernandes,Stefan Blügel,Samir Lounis###
(1547352, 1547352)
Unoccupied surface and interface states in Pd thin films deposited on Fe/Ir(111) surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[378.0, 10, ',', 11],[419.0, 2, ',', 12]

Pd
###Unoccupied surface and interface states in Pd thin films deposited on Fe/Ir(111) surface|Mohammed Bouhassoune,Imara L. Fernandes,Stefan Blügel,Samir Lounis###
(1547411, 1547411)
 We present a systematic first-principles study of the electronic surfacestates and resonances occuring in thin films of Pd of various thicknessesdeposited on a single ferromagnetic monolayer of Fe on top of Ir(111)substrate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[319.0, 10, ',', 10],[360.0, 2, ',', 11]

Fe
###Unoccupied surface and interface states in Pd thin films deposited on Fe/Ir(111) surface|Mohammed Bouhassoune,Imara L. Fernandes,Stefan Blügel,Samir Lounis###
(1547434, 1547434)
 We present a systematic first-principles study of the electronic surfacestates and resonances occuring in thin films of Pd of various thicknessesdeposited on a single ferromagnetic monolayer of Fe on top of Ir(111)substrate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[296.0, 10, ',', 10],[337.0, 2, ',', 11]

Pd
###Unoccupied surface and interface states in Pd thin films deposited on Fe/Ir(111) surface|Mohammed Bouhassoune,Imara L. Fernandes,Stefan Blügel,Samir Lounis###
(1547465, 1547465)
 This system is of interest since one Pd layer deposited onFe/Ir(111) hosts small magnetic skyrmions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[265.0, 10, ',', 9],[306.0, 2, ',', 10]

Pd/Fe
###Unoccupied surface and interface states in Pd thin films deposited on Fe/Ir(111) surface|Mohammed Bouhassoune,Imara L. Fernandes,Stefan Blügel,Samir Lounis###
(1547633, 1547635)
 Here we investigatethe nature of the unoccupied electronic states in Pd/Fe/Ir(111), which areessential in the large spin-mixing magnetoresistance (XMR) signature capturedusing non spin-polarized scanning tunnelling microscopy [Crum et al.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[95.0, 10, ',', 6],[136.0, 2, ',', 7]

Pd
###Unoccupied surface and interface states in Pd thin films deposited on Fe/Ir(111) surface|Mohammed Bouhassoune,Imara L. Fernandes,Stefan Blügel,Samir Lounis###
(1547769, 1547769)
 To provide a complete analysis, we investigate bare Fe/Ir(111) andPdn<missing VAR>2,7/Fe/Ir(111) surfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 10, ',', 1],[2.0, 2, ',', 0]

Pd
###Unoccupied surface and interface states in Pd thin films deposited on Fe/Ir(111) surface|Mohammed Bouhassoune,Imara L. Fernandes,Stefan Blügel,Samir Lounis###
(1547812, 1547812)
 Our results demonstrate the emergence ofsurface and interface states after deposition of Pd monolayers, which arestrongly impacted by the large spin-orbit coupling of Ir surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 10, ',', 2],[41.0, 2, ',', 1]

Ir
###Unoccupied surface and interface states in Pd thin films deposited on Fe/Ir(111) surface|Mohammed Bouhassoune,Imara L. Fernandes,Stefan Blügel,Samir Lounis###
(1547840, 1547840)
 Our results demonstrate the emergence ofsurface and interface states after deposition of Pd monolayers, which arestrongly impacted by the large spin-orbit coupling of Ir surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 10, ',', 2],[69.0, 2, ',', 1]

Pb
###Tunneling anisotropic magnetoresistance of Pb and Bi adatoms and dimers on Mn/W(110): A first-principles study|Soumyajyoti Haldar,Mara Gutzeit,Stefan Heinze###
(1548324, 1548324)
Tunneling anisotropic magnetoresistance of Pb and Bi adatoms and dimers on Mn/W(110) A first-principles study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 60, '%', 1],[114.0, 6, 'p', 1],[119.0, 3, 'd', 1],[561.0, 6, 'p', 7]

Bi
###Tunneling anisotropic magnetoresistance of Pb and Bi adatoms and dimers on Mn/W(110): A first-principles study|Soumyajyoti Haldar,Mara Gutzeit,Stefan Heinze###
(1548328, 1548328)
Tunneling anisotropic magnetoresistance of Pb and Bi adatoms and dimers on Mn/W(110) A first-principles study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 60, '%', 1],[110.0, 6, 'p', 1],[115.0, 3, 'd', 1],[557.0, 6, 'p', 7]

Pb
###Tunneling anisotropic magnetoresistance of Pb and Bi adatoms and dimers on Mn/W(110): A first-principles study|Soumyajyoti Haldar,Mara Gutzeit,Stefan Heinze###
(1548360, 1548360)
 We show that Pb and Bi adatoms and dimers have a large tunneling anisotropicmagnetoresistance (TAMR) of up to 60% when adsorbed on a magnetictransition-metal surface due to strong spin-orbit coupling and thehybridization of 6p orbitals with 3d states of the magnetic layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 60, '%', 0],[78.0, 6, 'p', 0],[83.0, 3, 'd', 0],[525.0, 6, 'p', 6]

Bi
###Tunneling anisotropic magnetoresistance of Pb and Bi adatoms and dimers on Mn/W(110): A first-principles study|Soumyajyoti Haldar,Mara Gutzeit,Stefan Heinze###
(1548364, 1548364)
 We show that Pb and Bi adatoms and dimers have a large tunneling anisotropicmagnetoresistance (TAMR) of up to 60% when adsorbed on a magnetictransition-metal surface due to strong spin-orbit coupling and thehybridization of 6p orbitals with 3d states of the magnetic layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 60, '%', 0],[74.0, 6, 'p', 0],[79.0, 3, 'd', 0],[521.0, 6, 'p', 6]

Pb
###Tunneling anisotropic magnetoresistance of Pb and Bi adatoms and dimers on Mn/W(110): A first-principles study|Soumyajyoti Haldar,Mara Gutzeit,Stefan Heinze###
(1548483, 1548483)
 Usingdensity functional theory, we have explored the TAMR effect of Pb and Biadatoms and dimers adsorbed on a Mn monolayer on W(110).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 60, '%', 1],[45.0, 6, 'p', 1],[40.0, 3, 'd', 1],[402.0, 6, 'p', 5]

Bi
###Tunneling anisotropic magnetoresistance of Pb and Bi adatoms and dimers on Mn/W(110): A first-principles study|Soumyajyoti Haldar,Mara Gutzeit,Stefan Heinze###
(1548487, 1548487)
 Usingdensity functional theory, we have explored the TAMR effect of Pb and Biadatoms and dimers adsorbed on a Mn monolayer on W(110).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 60, '%', 1],[49.0, 6, 'p', 1],[44.0, 3, 'd', 1],[398.0, 6, 'p', 5]

Mn
###Tunneling anisotropic magnetoresistance of Pb and Bi adatoms and dimers on Mn/W(110): A first-principles study|Soumyajyoti Haldar,Mara Gutzeit,Stefan Heinze###
(1548502, 1548502)
 Usingdensity functional theory, we have explored the TAMR effect of Pb and Biadatoms and dimers adsorbed on a Mn monolayer on W(110).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 60, '%', 1],[64.0, 6, 'p', 1],[59.0, 3, 'd', 1],[383.0, 6, 'p', 5]

S
###Tunneling anisotropic magnetoresistance of Pb and Bi adatoms and dimers on Mn/W(110): A first-principles study|Soumyajyoti Haldar,Mara Gutzeit,Stefan Heinze###
(1548619, 1548619)
 This surface exhibitsa noncollinear cycloidal spin spiral ground state with an angle of 173circbetween neighboring spins which allows to rotate the spin quantization axis ofan adatom or dimer quasi-continuously and is ideally suited to explore theangular dependence of TAMR using scanning tunneling microscopy (STM).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[221.0, 60, '%', 2],[181.0, 6, 'p', 2],[176.0, 3, 'd', 2],[266.0, 6, 'p', 4]

Pb
###Tunneling anisotropic magnetoresistance of Pb and Bi adatoms and dimers on Mn/W(110): A first-principles study|Soumyajyoti Haldar,Mara Gutzeit,Stefan Heinze###
(1548642, 1548642)
 We findthat the induced magnetic moments of Pb and Bi adatoms and dimers are small,however, the spin-polarization of the local density of states (LDOS) is stillvery large.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[244.0, 60, '%', 3],[204.0, 6, 'p', 3],[199.0, 3, 'd', 3],[243.0, 6, 'p', 3]

Bi
###Tunneling anisotropic magnetoresistance of Pb and Bi adatoms and dimers on Mn/W(110): A first-principles study|Soumyajyoti Haldar,Mara Gutzeit,Stefan Heinze###
(1548646, 1548646)
 We findthat the induced magnetic moments of Pb and Bi adatoms and dimers are small,however, the spin-polarization of the local density of states (LDOS) is stillvery large.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[248.0, 60, '%', 3],[208.0, 6, 'p', 3],[203.0, 3, 'd', 3],[239.0, 6, 'p', 3]

S
###Tunneling anisotropic magnetoresistance of Pb and Bi adatoms and dimers on Mn/W(110): A first-principles study|Soumyajyoti Haldar,Mara Gutzeit,Stefan Heinze###
(1548685, 1548685)
 We findthat the induced magnetic moments of Pb and Bi adatoms and dimers are small,however, the spin-polarization of the local density of states (LDOS) is stillvery large.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[287.0, 60, '%', 3],[247.0, 6, 'p', 3],[242.0, 3, 'd', 3],[200.0, 6, 'p', 3]

OS
###Tunneling anisotropic magnetoresistance of Pb and Bi adatoms and dimers on Mn/W(110): A first-principles study|Soumyajyoti Haldar,Mara Gutzeit,Stefan Heinze###
(1548721, 1548722)
 The TAMR obtained from the anisotropy of the vacuum LDOS is up to50-60 % for adatoms.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[323.0, 60, '%', 4],[283.0, 6, 'p', 4],[278.0, 3, 'd', 4],[163.0, 6, 'p', 2]

Mn
###Tunneling anisotropic magnetoresistance of Pb and Bi adatoms and dimers on Mn/W(110): A first-principles study|Soumyajyoti Haldar,Mara Gutzeit,Stefan Heinze###
(1548807, 1548807)
 For dimers the TAMR depends sensitively on the dimerorientation with respect to the crystallographic directions of the surface dueto the formation of bonds between the adatoms with the Mn surface atoms and thesymmetry of the spin-orbit coupling induced mixing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[409.0, 60, '%', 5],[369.0, 6, 'p', 5],[364.0, 3, 'd', 5],[78.0, 6, 'p', 1]

Mn
###Tunneling anisotropic magnetoresistance of Pb and Bi adatoms and dimers on Mn/W(110): A first-principles study|Soumyajyoti Haldar,Mara Gutzeit,Stefan Heinze###
(1548854, 1548854)
 Dimers oriented along thespin spiral direction of the Mn monolayer display the largest TAMR of 60 %which is due to hybrid 6p-3d<missing VAR> states of the dimers and the Mn layer<missing PERIOD>
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[456.0, 60, '%', 6],[416.0, 6, 'p', 6],[411.0, 3, 'd', 6],[31.0, 6, 'p', 0]

Mn
###Tunneling anisotropic magnetoresistance of Pb and Bi adatoms and dimers on Mn/W(110): A first-principles study|Soumyajyoti Haldar,Mara Gutzeit,Stefan Heinze###
(1548902, 1548902)
 Dimers oriented along thespin spiral direction of the Mn monolayer display the largest TAMR of 60 %which is due to hybrid 6p-3d<missing VAR> states of the dimers and the Mn layer<missing PERIOD>
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[504.0, 60, '%', 6],[464.0, 6, 'p', 6],[459.0, 3, 'd', 6],[17.0, 6, 'p', 0]

ZrGeSe
###Electronic Transport Evidence for Topological Nodal-Line Semimetals of ZrGeSe single crystals|Lei Guo,Ting-Wei Chen,Chen Chen,Lei Chen,Yang Zhang,Guan-Yin Gao,Jie Yang,Xiao-Guang Li,Wei-Yao Zhao,Shuai Dong,Ren-Kui Zheng###
(1548932, 1548934)
Electronic Transport Evidence for Topological Nodal-Line Semimetals of ZrGeSe single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 14, 'T', 2]

ZrGeSe
###Electronic Transport Evidence for Topological Nodal-Line Semimetals of ZrGeSe single crystals|Lei Guo,Ting-Wei Chen,Chen Chen,Lei Chen,Yang Zhang,Guan-Yin Gao,Jie Yang,Xiao-Guang Li,Wei-Yao Zhao,Shuai Dong,Ren-Kui Zheng###
(1548951, 1548953)
 Although the band topology of ZrGeSe has been studied via magnetic torquetechnique, the electronic transport behaviors related to the relativisticFermions in ZrGeSe are still unknown.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 14, 'T', 1]

ZrGeSe
###Electronic Transport Evidence for Topological Nodal-Line Semimetals of ZrGeSe single crystals|Lei Guo,Ting-Wei Chen,Chen Chen,Lei Chen,Yang Zhang,Guan-Yin Gao,Jie Yang,Xiao-Guang Li,Wei-Yao Zhao,Shuai Dong,Ren-Kui Zheng###
(1548992, 1548994)
 Although the band topology of ZrGeSe has been studied via magnetic torquetechnique, the electronic transport behaviors related to the relativisticFermions in ZrGeSe are still unknown.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 14, 'T', 1]

ZrGeSe
###Electronic Transport Evidence for Topological Nodal-Line Semimetals of ZrGeSe single crystals|Lei Guo,Ting-Wei Chen,Chen Chen,Lei Chen,Yang Zhang,Guan-Yin Gao,Jie Yang,Xiao-Guang Li,Wei-Yao Zhao,Shuai Dong,Ren-Kui Zheng###
(1549027, 1549029)
 Here, we first report systematicelectronic transport properties of high-quality ZrGeSe single crystals undermagnetic fields up to 14 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 14, 'T', 0]

K
###Electronic Transport Evidence for Topological Nodal-Line Semimetals of ZrGeSe single crystals|Lei Guo,Ting-Wei Chen,Chen Chen,Lei Chen,Yang Zhang,Guan-Yin Gao,Jie Yang,Xiao-Guang Li,Wei-Yao Zhao,Shuai Dong,Ren-Kui Zheng###
(1549151, 1549151)
 By analyzing the temperature- and angular-dependent Shubnikov-de Haasoscillations and fitting it via the Lifshitz-Kosevich (L<missing VAR>K) formula with theBerry phase being taken into account, we proved that Dirac fermions dominatethe electronic transport behaviors of ZrGeSe and the presence of non-trivialBerry phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 14, 'T', 2]

ZrGeSe
###Electronic Transport Evidence for Topological Nodal-Line Semimetals of ZrGeSe single crystals|Lei Guo,Ting-Wei Chen,Chen Chen,Lei Chen,Yang Zhang,Guan-Yin Gao,Jie Yang,Xiao-Guang Li,Wei-Yao Zhao,Shuai Dong,Ren-Kui Zheng###
(1549197, 1549199)
 By analyzing the temperature- and angular-dependent Shubnikov-de Haasoscillations and fitting it via the Lifshitz-Kosevich (L<missing VAR>K) formula with theBerry phase being taken into account, we proved that Dirac fermions dominatethe electronic transport behaviors of ZrGeSe and the presence of non-trivialBerry phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 14, 'T', 2]

ZrGeSe
###Electronic Transport Evidence for Topological Nodal-Line Semimetals of ZrGeSe single crystals|Lei Guo,Ting-Wei Chen,Chen Chen,Lei Chen,Yang Zhang,Guan-Yin Gao,Jie Yang,Xiao-Guang Li,Wei-Yao Zhao,Shuai Dong,Ren-Kui Zheng###
(1549229, 1549231)
 First principles calculations demonstrate that ZrGeSe possessesDirac bands and normal bands near Fermi surface, resulting in the observedmagnetotransport phenomena.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[184.0, 14, 'T', 3]

ZrGeSe
###Electronic Transport Evidence for Topological Nodal-Line Semimetals of ZrGeSe single crystals|Lei Guo,Ting-Wei Chen,Chen Chen,Lei Chen,Yang Zhang,Guan-Yin Gao,Jie Yang,Xiao-Guang Li,Wei-Yao Zhao,Shuai Dong,Ren-Kui Zheng###
(1549275, 1549277)
 These results demonstrate that ZrGeSe is atopological nodal-line semimetal, which provides a fundamentally importantplatform to study the quantum physics of topological semimetals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[230.0, 14, 'T', 4]

Sr
###Strain-driven nematicity of the odd-parity superconductivity in Sr$_x$Bi$_2$Se$_3$|A. Yu. Kuntsevich,M. A. Bryzgalov,V. P. Martovitskii,R. S. Akzyanov,Yu. G. Selivanov,A. L. Rakhmanov###
(1549349, 1549349)
Strain-driven nematicity of the odd-parity superconductivity in Srx<missing VAR>Bi2Se3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Se3
###Strain-driven nematicity of the odd-parity superconductivity in Sr$_x$Bi$_2$Se$_3$|A. Yu. Kuntsevich,M. A. Bryzgalov,V. P. Martovitskii,R. S. Akzyanov,Yu. G. Selivanov,A. L. Rakhmanov###
(1549351, 1549354)
Strain-driven nematicity of the odd-parity superconductivity in Srx<missing VAR>Bi2Se3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr
###Strain-driven nematicity of the odd-parity superconductivity in Sr$_x$Bi$_2$Se$_3$|A. Yu. Kuntsevich,M. A. Bryzgalov,V. P. Martovitskii,R. S. Akzyanov,Yu. G. Selivanov,A. L. Rakhmanov###
(1549401, 1549401)
 We present a novel experimental evidence for the odd-parity nematicsuperconductivity in high-quality single crystals of doped topologicalinsulator Srx<missing VAR>Bi2Se3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Se3
###Strain-driven nematicity of the odd-parity superconductivity in Sr$_x$Bi$_2$Se$_3$|A. Yu. Kuntsevich,M. A. Bryzgalov,V. P. Martovitskii,R. S. Akzyanov,Yu. G. Selivanov,A. L. Rakhmanov###
(1549403, 1549406)
 We present a novel experimental evidence for the odd-parity nematicsuperconductivity in high-quality single crystals of doped topologicalinsulator Srx<missing VAR>Bi2Se3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Strain-driven nematicity of the odd-parity superconductivity in Sr$_x$Bi$_2$Se$_3$|A. Yu. Kuntsevich,M. A. Bryzgalov,V. P. Martovitskii,R. S. Akzyanov,Yu. G. Selivanov,A. L. Rakhmanov###
(1549492, 1549492)
 We show that in the superconducting state,the upper critical magnetic field Hc<missing VAR>2 has a two-fold rotational symmetryand depends on the sign of the strain in the stretched samples, the maximum ofHc<missing VAR>2 is achieved when the in-plane magnetic field is transverse to thestrain axis, while in the compressed samples this maximum is observed when thefield is along the strain direction.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Strain-driven nematicity of the odd-parity superconductivity in Sr$_x$Bi$_2$Se$_3$|A. Yu. Kuntsevich,M. A. Bryzgalov,V. P. Martovitskii,R. S. Akzyanov,Yu. G. Selivanov,A. L. Rakhmanov###
(1549541, 1549541)
 We show that in the superconducting state,the upper critical magnetic field Hc<missing VAR>2 has a two-fold rotational symmetryand depends on the sign of the strain in the stretched samples, the maximum ofHc<missing VAR>2 is achieved when the in-plane magnetic field is transverse to thestrain axis, while in the compressed samples this maximum is observed when thefield is along the strain direction.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BaGa2
###Interlayer quantum transport in Dirac semimetal BaGa$_2$|Sheng Xu,Changhua Bao,Yi-Yan Wang,Peng-Jie Guo,Qiao-He Yu,Lin-Lin Sun,Yuan Su,Kai Liu,Zhong-Yi Lu,Shuyun Zhou,Tian-Long Xia###
(1549735, 1549737)
Interlayer quantum transport in Dirac semimetal BaGa2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Interlayer quantum transport in Dirac semimetal BaGa$_2$|Sheng Xu,Changhua Bao,Yi-Yan Wang,Peng-Jie Guo,Qiao-He Yu,Lin-Lin Sun,Yuan Su,Kai Liu,Zhong-Yi Lu,Shuyun Zhou,Tian-Long Xia###
(1549777, 1549777)
 Quantum limit is quite easy to achieve once the band crossing exists exactlyat the Fermi level (E<missing VAR>F) in topological semimetals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Interlayer quantum transport in Dirac semimetal BaGa$_2$|Sheng Xu,Changhua Bao,Yi-Yan Wang,Peng-Jie Guo,Qiao-He Yu,Lin-Lin Sun,Yuan Su,Kai Liu,Zhong-Yi Lu,Shuyun Zhou,Tian-Long Xia###
(1549787, 1549787)
 In multilayered Diracfermion system, the density of Dirac fermions on the zeroth Landau levels (L<missing VAR>Ls)increases in proportion to the magnetic field, resulting in intriguing angle-and field-dependent interlayer tunneling conductivity near the quantum limit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BaGa2
###Interlayer quantum transport in Dirac semimetal BaGa$_2$|Sheng Xu,Changhua Bao,Yi-Yan Wang,Peng-Jie Guo,Qiao-He Yu,Lin-Lin Sun,Yuan Su,Kai Liu,Zhong-Yi Lu,Shuyun Zhou,Tian-Long Xia###
(1549872, 1549874)
BaGa2 is an example of multilayered Dirac semimetal with anisotropic Diraccone close to E<missing VAR>F, providing a good platform to study its interlayertransport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Interlayer quantum transport in Dirac semimetal BaGa$_2$|Sheng Xu,Changhua Bao,Yi-Yan Wang,Peng-Jie Guo,Qiao-He Yu,Lin-Lin Sun,Yuan Su,Kai Liu,Zhong-Yi Lu,Shuyun Zhou,Tian-Long Xia###
(1549904, 1549904)
BaGa2 is an example of multilayered Dirac semimetal with anisotropic Diraccone close to E<missing VAR>F, providing a good platform to study its interlayertransport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Interlayer quantum transport in Dirac semimetal BaGa$_2$|Sheng Xu,Changhua Bao,Yi-Yan Wang,Peng-Jie Guo,Qiao-He Yu,Lin-Lin Sun,Yuan Su,Kai Liu,Zhong-Yi Lu,Shuyun Zhou,Tian-Long Xia###
(1549929, 1549929)
 In this paper, we report the negative interlayermagnetoresistance (NIMR, I//c<missing VAR> and B//c) induced by the tunneling of Diracfermions on the zeroth L<missing VAR>Ls of neighbouring Ga layers in BaGa2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NI
###Interlayer quantum transport in Dirac semimetal BaGa$_2$|Sheng Xu,Changhua Bao,Yi-Yan Wang,Peng-Jie Guo,Qiao-He Yu,Lin-Lin Sun,Yuan Su,Kai Liu,Zhong-Yi Lu,Shuyun Zhou,Tian-Long Xia###
(1549950, 1549951)
 In this paper, we report the negative interlayermagnetoresistance (NIMR, I//c<missing VAR> and B//c) induced by the tunneling of Diracfermions on the zeroth L<missing VAR>Ls of neighbouring Ga layers in BaGa2.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Interlayer quantum transport in Dirac semimetal BaGa$_2$|Sheng Xu,Changhua Bao,Yi-Yan Wang,Peng-Jie Guo,Qiao-He Yu,Lin-Lin Sun,Yuan Su,Kai Liu,Zhong-Yi Lu,Shuyun Zhou,Tian-Long Xia###
(1549956, 1549956)
 In this paper, we report the negative interlayermagnetoresistance (NIMR, I//c<missing VAR> and B//c) induced by the tunneling of Diracfermions on the zeroth L<missing VAR>Ls of neighbouring Ga layers in BaGa2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Interlayer quantum transport in Dirac semimetal BaGa$_2$|Sheng Xu,Changhua Bao,Yi-Yan Wang,Peng-Jie Guo,Qiao-He Yu,Lin-Lin Sun,Yuan Su,Kai Liu,Zhong-Yi Lu,Shuyun Zhou,Tian-Long Xia###
(1549963, 1549963)
 In this paper, we report the negative interlayermagnetoresistance (NIMR, I//c<missing VAR> and B//c) induced by the tunneling of Diracfermions on the zeroth L<missing VAR>Ls of neighbouring Ga layers in BaGa2.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###Interlayer quantum transport in Dirac semimetal BaGa$_2$|Sheng Xu,Changhua Bao,Yi-Yan Wang,Peng-Jie Guo,Qiao-He Yu,Lin-Lin Sun,Yuan Su,Kai Liu,Zhong-Yi Lu,Shuyun Zhou,Tian-Long Xia###
(1549997, 1549997)
 In this paper, we report the negative interlayermagnetoresistance (NIMR, I//c<missing VAR> and B//c) induced by the tunneling of Diracfermions on the zeroth L<missing VAR>Ls of neighbouring Ga layers in BaGa2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BaGa2
###Interlayer quantum transport in Dirac semimetal BaGa$_2$|Sheng Xu,Changhua Bao,Yi-Yan Wang,Peng-Jie Guo,Qiao-He Yu,Lin-Lin Sun,Yuan Su,Kai Liu,Zhong-Yi Lu,Shuyun Zhou,Tian-Long Xia###
(1550003, 1550005)
 In this paper, we report the negative interlayermagnetoresistance (NIMR, I//c<missing VAR> and B//c) induced by the tunneling of Diracfermions on the zeroth L<missing VAR>Ls of neighbouring Ga layers in BaGa2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NI
###Interlayer quantum transport in Dirac semimetal BaGa$_2$|Sheng Xu,Changhua Bao,Yi-Yan Wang,Peng-Jie Guo,Qiao-He Yu,Lin-Lin Sun,Yuan Su,Kai Liu,Zhong-Yi Lu,Shuyun Zhou,Tian-Long Xia###
(1550082, 1550083)
 These unusual interlayer transport properties (NIMR and resistivitypeak with Bperpc) are observed together for the first time in Diracsemimetal under ambient pressure and are well explained by the model oftunneling between Dirac fermions in the quantum limit.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Interlayer quantum transport in Dirac semimetal BaGa$_2$|Sheng Xu,Changhua Bao,Yi-Yan Wang,Peng-Jie Guo,Qiao-He Yu,Lin-Lin Sun,Yuan Su,Kai Liu,Zhong-Yi Lu,Shuyun Zhou,Tian-Long Xia###
(1550096, 1550096)
 These unusual interlayer transport properties (NIMR and resistivitypeak with Bperpc) are observed together for the first time in Diracsemimetal under ambient pressure and are well explained by the model oftunneling between Dirac fermions in the quantum limit.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PrV2Al20
###Unveiling Quadrupolar Kondo Effect in the Heavy Fermion Superconductor PrV$_2$Al$_{20}$|Mingxuan Fu,Akito Sakai,Naoki Sogabe,Masaki Tsujimoto,Yosuke Matsumoto,Satoru Nakatsuji###
(1550188, 1550192)
Unveiling Quadrupolar Kondo Effect in the Heavy Fermion Superconductor PrV2Al20.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.8695652173913043,0,0,0,0,0,0,0,0,0,0.08695652173913043,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.043478260869565216,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Unveiling Quadrupolar Kondo Effect in the Heavy Fermion Superconductor PrV$_2$Al$_{20}$|Mingxuan Fu,Akito Sakai,Naoki Sogabe,Masaki Tsujimoto,Yosuke Matsumoto,Satoru Nakatsuji###
(1550235, 1550235)
 In such systems, thequadrupolar Kondo effect serves as the key ingredient in the orbital-drivennon-Fermi liquid (NFL) behavior and quantum critical phenomena.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NF
###Unveiling Quadrupolar Kondo Effect in the Heavy Fermion Superconductor PrV$_2$Al$_{20}$|Mingxuan Fu,Akito Sakai,Naoki Sogabe,Masaki Tsujimoto,Yosuke Matsumoto,Satoru Nakatsuji###
(1550277, 1550278)
 In such systems, thequadrupolar Kondo effect serves as the key ingredient in the orbital-drivennon-Fermi liquid (NFL) behavior and quantum critical phenomena.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pr
###Unveiling Quadrupolar Kondo Effect in the Heavy Fermion Superconductor PrV$_2$Al$_{20}$|Mingxuan Fu,Akito Sakai,Naoki Sogabe,Masaki Tsujimoto,Yosuke Matsumoto,Satoru Nakatsuji###
(1550304, 1550304)
 The cubic heavyfermion superconductor PrTr2Al20 (Tr Ti, V) is a prime candidate forrealizing the quadrupolar Kondo lattice.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Al20
###Unveiling Quadrupolar Kondo Effect in the Heavy Fermion Superconductor PrV$_2$Al$_{20}$|Mingxuan Fu,Akito Sakai,Naoki Sogabe,Masaki Tsujimoto,Yosuke Matsumoto,Satoru Nakatsuji###
(1550307, 1550308)
 The cubic heavyfermion superconductor PrTr2Al20 (Tr Ti, V) is a prime candidate forrealizing the quadrupolar Kondo lattice.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ti
###Unveiling Quadrupolar Kondo Effect in the Heavy Fermion Superconductor PrV$_2$Al$_{20}$|Mingxuan Fu,Akito Sakai,Naoki Sogabe,Masaki Tsujimoto,Yosuke Matsumoto,Satoru Nakatsuji###
(1550313, 1550313)
 The cubic heavyfermion superconductor PrTr2Al20 (Tr Ti, V) is a prime candidate forrealizing the quadrupolar Kondo lattice.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Unveiling Quadrupolar Kondo Effect in the Heavy Fermion Superconductor PrV$_2$Al$_{20}$|Mingxuan Fu,Akito Sakai,Naoki Sogabe,Masaki Tsujimoto,Yosuke Matsumoto,Satoru Nakatsuji###
(1550316, 1550316)
 The cubic heavyfermion superconductor PrTr2Al20 (Tr Ti, V) is a prime candidate forrealizing the quadrupolar Kondo lattice.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NF
###Unveiling Quadrupolar Kondo Effect in the Heavy Fermion Superconductor PrV$_2$Al$_{20}$|Mingxuan Fu,Akito Sakai,Naoki Sogabe,Masaki Tsujimoto,Yosuke Matsumoto,Satoru Nakatsuji###
(1550359, 1550360)
 Here, we present a systematic study ofthe NFL<missing VAR> phenomena in PrV2Al20 based on magnetoresistance (MR), magneticsusceptibility and specific heat measurements.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PrV2Al20
###Unveiling Quadrupolar Kondo Effect in the Heavy Fermion Superconductor PrV$_2$Al$_{20}$|Mingxuan Fu,Akito Sakai,Naoki Sogabe,Masaki Tsujimoto,Yosuke Matsumoto,Satoru Nakatsuji###
(1550367, 1550371)
 Here, we present a systematic study ofthe NFL<missing VAR> phenomena in PrV2Al20 based on magnetoresistance (MR), magneticsusceptibility and specific heat measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.8695652173913043,0,0,0,0,0,0,0,0,0,0.08695652173913043,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.043478260869565216,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NF
###Unveiling Quadrupolar Kondo Effect in the Heavy Fermion Superconductor PrV$_2$Al$_{20}$|Mingxuan Fu,Akito Sakai,Naoki Sogabe,Masaki Tsujimoto,Yosuke Matsumoto,Satoru Nakatsuji###
(1550405, 1550406)
 Upon entering the NFL<missing VAR> regime, weobserve a universal scaling behavior expected for the quadrupolar Kondo latticein PrV2Al20, which indicates a prominent role of the quadrupolar Kondoeffect in driving the NFL<missing VAR> behavior.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PrV2Al20
###Unveiling Quadrupolar Kondo Effect in the Heavy Fermion Superconductor PrV$_2$Al$_{20}$|Mingxuan Fu,Akito Sakai,Naoki Sogabe,Masaki Tsujimoto,Yosuke Matsumoto,Satoru Nakatsuji###
(1550440, 1550444)
 Upon entering the NFL<missing VAR> regime, weobserve a universal scaling behavior expected for the quadrupolar Kondo latticein PrV2Al20, which indicates a prominent role of the quadrupolar Kondoeffect in driving the NFL<missing VAR> behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.8695652173913043,0,0,0,0,0,0,0,0,0,0.08695652173913043,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.043478260869565216,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NF
###Unveiling Quadrupolar Kondo Effect in the Heavy Fermion Superconductor PrV$_2$Al$_{20}$|Mingxuan Fu,Akito Sakai,Naoki Sogabe,Masaki Tsujimoto,Yosuke Matsumoto,Satoru Nakatsuji###
(1550474, 1550475)
 Upon entering the NFL<missing VAR> regime, weobserve a universal scaling behavior expected for the quadrupolar Kondo latticein PrV2Al20, which indicates a prominent role of the quadrupolar Kondoeffect in driving the NFL<missing VAR> behavior.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Unveiling Quadrupolar Kondo Effect in the Heavy Fermion Superconductor PrV$_2$Al$_{20}$|Mingxuan Fu,Akito Sakai,Naoki Sogabe,Masaki Tsujimoto,Yosuke Matsumoto,Satoru Nakatsuji###
(1550500, 1550500)
 Deviations from this scaling relation occurbelow sim 8 K, accompanied by a sign change in the MR and a power-lawdivergence in the specific heat.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###A Synthetic Skyrmion Platform with Robust Tunability|Yong Li,Qiyuan Feng,Sihua Li,Ke Huang,Weiliang Gan,Haibiao Zhou,Xiangjun Jin,Xiao Renshaw Wang,Fusheng Ma,Qingyou Lu,Wen Siang Lew###
(1550671, 1550671)
 In these multilayers, the heavy metal spacing layersprovide an interfacial Dzyaloshinskii-Moriya interaction (DMI) for stabilizingskyrmions at the expense of interlayer exchanging coupling (IE<missing VAR>C).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[264.0, 4.5, 'to', 4],[265.0, 300, 'K', 4],[275.0, 400, 'to', 4]

I
###A Synthetic Skyrmion Platform with Robust Tunability|Yong Li,Qiyuan Feng,Sihua Li,Ke Huang,Weiliang Gan,Haibiao Zhou,Xiangjun Jin,Xiao Renshaw Wang,Fusheng Ma,Qingyou Lu,Wen Siang Lew###
(1550704, 1550704)
 In these multilayers, the heavy metal spacing layersprovide an interfacial Dzyaloshinskii-Moriya interaction (DMI) for stabilizingskyrmions at the expense of interlayer exchanging coupling (IE<missing VAR>C).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[231.0, 4.5, 'to', 4],[232.0, 300, 'K', 4],[242.0, 400, 'to', 4]

I
###A Synthetic Skyrmion Platform with Robust Tunability|Yong Li,Qiyuan Feng,Sihua Li,Ke Huang,Weiliang Gan,Haibiao Zhou,Xiangjun Jin,Xiao Renshaw Wang,Fusheng Ma,Qingyou Lu,Wen Siang Lew###
(1550729, 1550729)
 In these multilayers, the heavy metal spacing layersprovide an interfacial Dzyaloshinskii-Moriya interaction (DMI) for stabilizingskyrmions at the expense of interlayer exchanging coupling (IE<missing VAR>C).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[206.0, 4.5, 'to', 4],[207.0, 300, 'K', 4],[217.0, 400, 'to', 4]

C
###A Synthetic Skyrmion Platform with Robust Tunability|Yong Li,Qiyuan Feng,Sihua Li,Ke Huang,Weiliang Gan,Haibiao Zhou,Xiangjun Jin,Xiao Renshaw Wang,Fusheng Ma,Qingyou Lu,Wen Siang Lew###
(1550731, 1550731)
 In these multilayers, the heavy metal spacing layersprovide an interfacial Dzyaloshinskii-Moriya interaction (DMI) for stabilizingskyrmions at the expense of interlayer exchanging coupling (IE<missing VAR>C).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[204.0, 4.5, 'to', 4],[205.0, 300, 'K', 4],[215.0, 400, 'to', 4]

S
###A Synthetic Skyrmion Platform with Robust Tunability|Yong Li,Qiyuan Feng,Sihua Li,Ke Huang,Weiliang Gan,Haibiao Zhou,Xiangjun Jin,Xiao Renshaw Wang,Fusheng Ma,Qingyou Lu,Wen Siang Lew###
(1550793, 1550793)
 To meet thefunctional requirement of ordered/designable arrangement, in this work, weproposed and experimentally demonstrated a scenario of skyrmion nucleationusing nanostructured synthetic antiferromagnetic (SAF) multilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 4.5, 'to', 3],[143.0, 300, 'K', 3],[153.0, 400, 'to', 3]

F
###A Synthetic Skyrmion Platform with Robust Tunability|Yong Li,Qiyuan Feng,Sihua Li,Ke Huang,Weiliang Gan,Haibiao Zhou,Xiangjun Jin,Xiao Renshaw Wang,Fusheng Ma,Qingyou Lu,Wen Siang Lew###
(1550795, 1550795)
 To meet thefunctional requirement of ordered/designable arrangement, in this work, weproposed and experimentally demonstrated a scenario of skyrmion nucleationusing nanostructured synthetic antiferromagnetic (SAF) multilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 4.5, 'to', 3],[141.0, 300, 'K', 3],[151.0, 400, 'to', 3]

I
###A Synthetic Skyrmion Platform with Robust Tunability|Yong Li,Qiyuan Feng,Sihua Li,Ke Huang,Weiliang Gan,Haibiao Zhou,Xiangjun Jin,Xiao Renshaw Wang,Fusheng Ma,Qingyou Lu,Wen Siang Lew###
(1550812, 1550812)
 Instead ofrelying on DMI, the antiferromagnetic IE<missing VAR>C in the SAF multilayers fulfills therole of nucleation and stabilization of skyrmions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 4.5, 'to', 2],[124.0, 300, 'K', 2],[134.0, 400, 'to', 2]

I
###A Synthetic Skyrmion Platform with Robust Tunability|Yong Li,Qiyuan Feng,Sihua Li,Ke Huang,Weiliang Gan,Haibiao Zhou,Xiangjun Jin,Xiao Renshaw Wang,Fusheng Ma,Qingyou Lu,Wen Siang Lew###
(1550819, 1550819)
 Instead ofrelying on DMI, the antiferromagnetic IE<missing VAR>C in the SAF multilayers fulfills therole of nucleation and stabilization of skyrmions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 4.5, 'to', 2],[117.0, 300, 'K', 2],[127.0, 400, 'to', 2]

C
###A Synthetic Skyrmion Platform with Robust Tunability|Yong Li,Qiyuan Feng,Sihua Li,Ke Huang,Weiliang Gan,Haibiao Zhou,Xiangjun Jin,Xiao Renshaw Wang,Fusheng Ma,Qingyou Lu,Wen Siang Lew###
(1550821, 1550821)
 Instead ofrelying on DMI, the antiferromagnetic IE<missing VAR>C in the SAF multilayers fulfills therole of nucleation and stabilization of skyrmions.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 4.5, 'to', 2],[115.0, 300, 'K', 2],[125.0, 400, 'to', 2]

S
###A Synthetic Skyrmion Platform with Robust Tunability|Yong Li,Qiyuan Feng,Sihua Li,Ke Huang,Weiliang Gan,Haibiao Zhou,Xiangjun Jin,Xiao Renshaw Wang,Fusheng Ma,Qingyou Lu,Wen Siang Lew###
(1550827, 1550827)
 Instead ofrelying on DMI, the antiferromagnetic IE<missing VAR>C in the SAF multilayers fulfills therole of nucleation and stabilization of skyrmions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 4.5, 'to', 2],[109.0, 300, 'K', 2],[119.0, 400, 'to', 2]

F
###A Synthetic Skyrmion Platform with Robust Tunability|Yong Li,Qiyuan Feng,Sihua Li,Ke Huang,Weiliang Gan,Haibiao Zhou,Xiangjun Jin,Xiao Renshaw Wang,Fusheng Ma,Qingyou Lu,Wen Siang Lew###
(1550829, 1550829)
 Instead ofrelying on DMI, the antiferromagnetic IE<missing VAR>C in the SAF multilayers fulfills therole of nucleation and stabilization of skyrmions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 4.5, 'to', 2],[107.0, 300, 'K', 2],[117.0, 400, 'to', 2]

I
###A Synthetic Skyrmion Platform with Robust Tunability|Yong Li,Qiyuan Feng,Sihua Li,Ke Huang,Weiliang Gan,Haibiao Zhou,Xiangjun Jin,Xiao Renshaw Wang,Fusheng Ma,Qingyou Lu,Wen Siang Lew###
(1550855, 1550855)
 The IE<missing VAR>C induced skyrmionswere identified directly imaged with MFM and confirmed by magnetometry andmagnetoresistance measurements as well as micromagnetic simulation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 4.5, 'to', 1],[81.0, 300, 'K', 1],[91.0, 400, 'to', 1]

C
###A Synthetic Skyrmion Platform with Robust Tunability|Yong Li,Qiyuan Feng,Sihua Li,Ke Huang,Weiliang Gan,Haibiao Zhou,Xiangjun Jin,Xiao Renshaw Wang,Fusheng Ma,Qingyou Lu,Wen Siang Lew###
(1550857, 1550857)
 The IE<missing VAR>C induced skyrmionswere identified directly imaged with MFM and confirmed by magnetometry andmagnetoresistance measurements as well as micromagnetic simulation.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 4.5, 'to', 1],[79.0, 300, 'K', 1],[89.0, 400, 'to', 1]

NbTiN
###Superconducting phase transitions in disordered NbTiN films|M. V. Burdastyh,S. V. Postolova,T. Proslier,S. S. Ustavshikov,A. V. Antonov,V. M. Vinokur,A. Yu. Mironov###
(1551020, 1551022)
Superconducting phase transitions in disordered NbTiN films.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nb1-xTi
###Superconducting phase transitions in disordered NbTiN films|M. V. Burdastyh,S. V. Postolova,T. Proslier,S. S. Ustavshikov,A. V. Antonov,V. M. Vinokur,A. Yu. Mironov###
(1551077, 1551081)
 Here we investigate the superconductingniobium-titanium-nitride (Nb1-xTix<missing VAR>N) thin films grown by atomic layerdeposition (ALD) where disorder is controlled by the slight tuning of the ALDprocess parameters.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

N
###Superconducting phase transitions in disordered NbTiN films|M. V. Burdastyh,S. V. Postolova,T. Proslier,S. S. Ustavshikov,A. V. Antonov,V. M. Vinokur,A. Yu. Mironov###
(1551083, 1551083)
 Here we investigate the superconductingniobium-titanium-nitride (Nb1-xTix<missing VAR>N) thin films grown by atomic layerdeposition (ALD) where disorder is controlled by the slight tuning of the ALDprocess parameters.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CrTe2
###Room temperature 2D ferromagnetism in few-layered 1$T$-CrTe$_{2}$|Xingdan Sun,Wanying Li,Xiao Wang,Qi Sui,Tongyao Zhang,Zhi Wang,Long Liu,Da Li,Shun Feng,Siyu Zhong,Hanwen Wang,Vincent Bouchiat,Manuel Nunez Regueiro,Nicolas Rougemaille,Johann Coraux,Zhenhua Wang,Baojuan Dong,Xing Wu,Teng Yang,Guoqiang Yu,Bingwu Wang,Zheng Vitto Han,Xiufeng Han,Zhidong Zhang###
(1551457, 1551459)
Room temperature 2D ferromagnetism in few-layered 1T<missing VAR>-CrTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 2, 'D', 0],[84.0, 2, 'D', 2],[162.0, 316, 'K', 3],[198.0, 2, 'D', 4],[293.0, -0.6, '%', 5],[298.0, 300, 'K', 5],[302.0, 5, '%', 5],[390.0, 2, 'D', 7]

W
###Room temperature 2D ferromagnetism in few-layered 1$T$-CrTe$_{2}$|Xingdan Sun,Wanying Li,Xiao Wang,Qi Sui,Tongyao Zhang,Zhi Wang,Long Liu,Da Li,Shun Feng,Siyu Zhong,Hanwen Wang,Vincent Bouchiat,Manuel Nunez Regueiro,Nicolas Rougemaille,Johann Coraux,Zhenhua Wang,Baojuan Dong,Xing Wu,Teng Yang,Guoqiang Yu,Bingwu Wang,Zheng Vitto Han,Xiufeng Han,Zhidong Zhang###
(1551487, 1551487)
 Spin-related electronics using two dimensional (2D) van der Waals (vdW)materials as a platform are believed to hold great promise for revolutionizingthe next generation spintronics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 2, 'D', 1],[56.0, 2, 'D', 1],[134.0, 316, 'K', 2],[170.0, 2, 'D', 3],[265.0, -0.6, '%', 4],[270.0, 300, 'K', 4],[274.0, 5, '%', 4],[362.0, 2, 'D', 6]

W
###Room temperature 2D ferromagnetism in few-layered 1$T$-CrTe$_{2}$|Xingdan Sun,Wanying Li,Xiao Wang,Qi Sui,Tongyao Zhang,Zhi Wang,Long Liu,Da Li,Shun Feng,Siyu Zhong,Hanwen Wang,Vincent Bouchiat,Manuel Nunez Regueiro,Nicolas Rougemaille,Johann Coraux,Zhenhua Wang,Baojuan Dong,Xing Wu,Teng Yang,Guoqiang Yu,Bingwu Wang,Zheng Vitto Han,Xiufeng Han,Zhidong Zhang###
(1551574, 1551574)
 Although many emerging new phenomena have beenunravelled in 2D electronic systems with spin long-range orderings, thescarcely reported room temperature magnetic vdW material has thus far hinderedthe related applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 2, 'D', 2],[31.0, 2, 'D', 0],[47.0, 316, 'K', 1],[83.0, 2, 'D', 2],[178.0, -0.6, '%', 3],[183.0, 300, 'K', 3],[187.0, 5, '%', 3],[275.0, 2, 'D', 5]

CrTe2
###Room temperature 2D ferromagnetism in few-layered 1$T$-CrTe$_{2}$|Xingdan Sun,Wanying Li,Xiao Wang,Qi Sui,Tongyao Zhang,Zhi Wang,Long Liu,Da Li,Shun Feng,Siyu Zhong,Hanwen Wang,Vincent Bouchiat,Manuel Nunez Regueiro,Nicolas Rougemaille,Johann Coraux,Zhenhua Wang,Baojuan Dong,Xing Wu,Teng Yang,Guoqiang Yu,Bingwu Wang,Zheng Vitto Han,Xiufeng Han,Zhidong Zhang###
(1551637, 1551639)
 Here, we show that intrinsic ferromagneticallyaligned spin polarization can hold up to 316 K in a metallic phase of1T<missing VAR>-CrTe2 in the few-layer limit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[193.0, 2, 'D', 3],[94.0, 2, 'D', 1],[16.0, 316, 'K', 0],[18.0, 2, 'D', 1],[113.0, -0.6, '%', 2],[118.0, 300, 'K', 2],[122.0, 5, '%', 2],[210.0, 2, 'D', 4]

CrTe2
###Room temperature 2D ferromagnetism in few-layered 1$T$-CrTe$_{2}$|Xingdan Sun,Wanying Li,Xiao Wang,Qi Sui,Tongyao Zhang,Zhi Wang,Long Liu,Da Li,Shun Feng,Siyu Zhong,Hanwen Wang,Vincent Bouchiat,Manuel Nunez Regueiro,Nicolas Rougemaille,Johann Coraux,Zhenhua Wang,Baojuan Dong,Xing Wu,Teng Yang,Guoqiang Yu,Bingwu Wang,Zheng Vitto Han,Xiufeng Han,Zhidong Zhang###
(1551721, 1551723)
 Spintransport measurements indicate an in-plane room temperature negativeanisotropic magnetoresistance (AMR) in few-layered CrTe2, but a signchange in the AMR at lower temperature, with -0.6% at 300 K and 5% at 10K, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[277.0, 2, 'D', 5],[178.0, 2, 'D', 3],[100.0, 316, 'K', 2],[64.0, 2, 'D', 1],[29.0, -0.6, '%', 0],[34.0, 300, 'K', 0],[38.0, 5, '%', 0],[126.0, 2, 'D', 2]

K
###Room temperature 2D ferromagnetism in few-layered 1$T$-CrTe$_{2}$|Xingdan Sun,Wanying Li,Xiao Wang,Qi Sui,Tongyao Zhang,Zhi Wang,Long Liu,Da Li,Shun Feng,Siyu Zhong,Hanwen Wang,Vincent Bouchiat,Manuel Nunez Regueiro,Nicolas Rougemaille,Johann Coraux,Zhenhua Wang,Baojuan Dong,Xing Wu,Teng Yang,Guoqiang Yu,Bingwu Wang,Zheng Vitto Han,Xiufeng Han,Zhidong Zhang###
(1551769, 1551769)
 Spintransport measurements indicate an in-plane room temperature negativeanisotropic magnetoresistance (AMR) in few-layered CrTe2, but a signchange in the AMR at lower temperature, with -0.6% at 300 K and 5% at 10K, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[325.0, 2, 'D', 5],[226.0, 2, 'D', 3],[148.0, 316, 'K', 2],[112.0, 2, 'D', 1],[17.0, -0.6, '%', 0],[12.0, 300, 'K', 0],[8.0, 5, '%', 0],[80.0, 2, 'D', 2]

CrTe2
###Room temperature 2D ferromagnetism in few-layered 1$T$-CrTe$_{2}$|Xingdan Sun,Wanying Li,Xiao Wang,Qi Sui,Tongyao Zhang,Zhi Wang,Long Liu,Da Li,Shun Feng,Siyu Zhong,Hanwen Wang,Vincent Bouchiat,Manuel Nunez Regueiro,Nicolas Rougemaille,Johann Coraux,Zhenhua Wang,Baojuan Dong,Xing Wu,Teng Yang,Guoqiang Yu,Bingwu Wang,Zheng Vitto Han,Xiufeng Han,Zhidong Zhang###
(1551800, 1551802)
 This behavior may originate from the specific spin polarizedband structure of CrTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[356.0, 2, 'D', 6],[257.0, 2, 'D', 4],[179.0, 316, 'K', 3],[143.0, 2, 'D', 2],[48.0, -0.6, '%', 1],[43.0, 300, 'K', 1],[39.0, 5, '%', 1],[47.0, 2, 'D', 1]

CrTe2
###Room temperature 2D ferromagnetism in few-layered 1$T$-CrTe$_{2}$|Xingdan Sun,Wanying Li,Xiao Wang,Qi Sui,Tongyao Zhang,Zhi Wang,Long Liu,Da Li,Shun Feng,Siyu Zhong,Hanwen Wang,Vincent Bouchiat,Manuel Nunez Regueiro,Nicolas Rougemaille,Johann Coraux,Zhenhua Wang,Baojuan Dong,Xing Wu,Teng Yang,Guoqiang Yu,Bingwu Wang,Zheng Vitto Han,Xiufeng Han,Zhidong Zhang###
(1551824, 1551826)
 Our findings provide insights into magnetism infew-layered CrTe2, suggesting potential for future room temperaturespintronic applications of such 2D vdW magnets.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[380.0, 2, 'D', 7],[281.0, 2, 'D', 5],[203.0, 316, 'K', 4],[167.0, 2, 'D', 3],[72.0, -0.6, '%', 2],[67.0, 300, 'K', 2],[63.0, 5, '%', 2],[23.0, 2, 'D', 0]

W
###Room temperature 2D ferromagnetism in few-layered 1$T$-CrTe$_{2}$|Xingdan Sun,Wanying Li,Xiao Wang,Qi Sui,Tongyao Zhang,Zhi Wang,Long Liu,Da Li,Shun Feng,Siyu Zhong,Hanwen Wang,Vincent Bouchiat,Manuel Nunez Regueiro,Nicolas Rougemaille,Johann Coraux,Zhenhua Wang,Baojuan Dong,Xing Wu,Teng Yang,Guoqiang Yu,Bingwu Wang,Zheng Vitto Han,Xiufeng Han,Zhidong Zhang###
(1551852, 1551852)
 Our findings provide insights into magnetism infew-layered CrTe2, suggesting potential for future room temperaturespintronic applications of such 2D vdW magnets.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[408.0, 2, 'D', 7],[309.0, 2, 'D', 5],[231.0, 316, 'K', 4],[195.0, 2, 'D', 3],[100.0, -0.6, '%', 2],[95.0, 300, 'K', 2],[91.0, 5, '%', 2],[3.0, 2, 'D', 0]

S
###Immunity of nanoscale magnetic tunnel junctions to ionizing radiation|Eric Arturo Montoya,Jen-Ru Chen,Randy Ngelale,Han Kyu Lee,Hsin-Wei Tseng,Lei Wan,En Yang,Patrick Braganca,Ozdal Boyraz,Nader Bagherzadeh,Mikael Nilsson,Ilya N. Krivorotov###
(1551899, 1551899)
 Spin transfer torque magnetic random access memory (STT-MRAM) is a promisingcandidate for next generation memory as it is non-volatile, fast, and hasunlimited endurance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Immunity of nanoscale magnetic tunnel junctions to ionizing radiation|Eric Arturo Montoya,Jen-Ru Chen,Randy Ngelale,Han Kyu Lee,Hsin-Wei Tseng,Lei Wan,En Yang,Patrick Braganca,Ozdal Boyraz,Nader Bagherzadeh,Mikael Nilsson,Ilya N. Krivorotov###
(1551958, 1551958)
 Another important aspect of STT-MRAM<missing VAR> is that its corecomponent, the nanoscale magnetic tunneling junction (MTJ), is thought to beradiation hard, making it attractive for space and nuclear technologyapplications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Immunity of nanoscale magnetic tunnel junctions to ionizing radiation|Eric Arturo Montoya,Jen-Ru Chen,Randy Ngelale,Han Kyu Lee,Hsin-Wei Tseng,Lei Wan,En Yang,Patrick Braganca,Ozdal Boyraz,Nader Bagherzadeh,Mikael Nilsson,Ilya N. Krivorotov###
(1552056, 1552056)
 However, studies of the effects of high doses of ionizingradiation on STT-MRAM<missing VAR> writing process are lacking.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Immunity of nanoscale magnetic tunnel junctions to ionizing radiation|Eric Arturo Montoya,Jen-Ru Chen,Randy Ngelale,Han Kyu Lee,Hsin-Wei Tseng,Lei Wan,En Yang,Patrick Braganca,Ozdal Boyraz,Nader Bagherzadeh,Mikael Nilsson,Ilya N. Krivorotov###
(1552126, 1552126)
 Here we report measurementsof the impact of high doses of gamma and neutron radiation on nanoscale MTJswith perpendicular magnetic anistropy used in STT-MRAM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Immunity of nanoscale magnetic tunnel junctions to ionizing radiation|Eric Arturo Montoya,Jen-Ru Chen,Randy Ngelale,Han Kyu Lee,Hsin-Wei Tseng,Lei Wan,En Yang,Patrick Braganca,Ozdal Boyraz,Nader Bagherzadeh,Mikael Nilsson,Ilya N. Krivorotov###
(1552206, 1552206)
 Our results demonstratethat all these key properties of nanoscale MTJs relevant to STT-MRAM<missing VAR>applications are robust against ionizing radiation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Perdeuteration of poly[2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylenevinylene] (d-MEHPPV): control of microscopic charge-carrier spin-spin coupling and of magnetic-field effects in optoelectronic devices|Dani M. Stoltzfus,Gajadhar Joshi,Henna Popli,Shirin Jamali,Marzieh Kavand,Sebastian Milster,Tobias Grünbaum,Sebastian Bange,Adnan Nahlawi,Mandefro Y. Teferi,Sabastian I. Atwood,Anna E. Leung,Tamim A. Darwish,Hans Malissa,Paul L. Burn,John M. Lupton,Christoph Boehme###
(1552340, 1552340)
Perdeuteration of poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (d-MEHPPV) control of microscopic charge-carrier spin-spin coupling and of magnetic-field effects in optoelectronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, -1, ',', 0],[73.0, -1, ',', 1]

V
###Perdeuteration of poly[2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylenevinylene] (d-MEHPPV): control of microscopic charge-carrier spin-spin coupling and of magnetic-field effects in optoelectronic devices|Dani M. Stoltzfus,Gajadhar Joshi,Henna Popli,Shirin Jamali,Marzieh Kavand,Sebastian Milster,Tobias Grünbaum,Sebastian Bange,Adnan Nahlawi,Mandefro Y. Teferi,Sabastian I. Atwood,Anna E. Leung,Tamim A. Darwish,Hans Malissa,Paul L. Burn,John M. Lupton,Christoph Boehme###
(1552427, 1552427)
 Control of the effective local hyperfine fields in a conjugated polymer,poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEHPPV), byisotopic engineering is reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, -1, ',', 1],[14.0, -1, ',', 0]

As
###Perdeuteration of poly[2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylenevinylene] (d-MEHPPV): control of microscopic charge-carrier spin-spin coupling and of magnetic-field effects in optoelectronic devices|Dani M. Stoltzfus,Gajadhar Joshi,Henna Popli,Shirin Jamali,Marzieh Kavand,Sebastian Milster,Tobias Grünbaum,Sebastian Bange,Adnan Nahlawi,Mandefro Y. Teferi,Sabastian I. Atwood,Anna E. Leung,Tamim A. Darwish,Hans Malissa,Paul L. Burn,John M. Lupton,Christoph Boehme###
(1552627, 1552627)
 As a consequence, we can resolvecoherent charge-carrier spin-beating, allowing for direct measurements of themagnitude of electronic spin-spin interactions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[303.0, -1, ',', 4],[214.0, -1, ',', 3]

In
###Perdeuteration of poly[2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylenevinylene] (d-MEHPPV): control of microscopic charge-carrier spin-spin coupling and of magnetic-field effects in optoelectronic devices|Dani M. Stoltzfus,Gajadhar Joshi,Henna Popli,Shirin Jamali,Marzieh Kavand,Sebastian Milster,Tobias Grünbaum,Sebastian Bange,Adnan Nahlawi,Mandefro Y. Teferi,Sabastian I. Atwood,Anna E. Leung,Tamim A. Darwish,Hans Malissa,Paul L. Burn,John M. Lupton,Christoph Boehme###
(1552678, 1552678)
 In addition, the weak hyperfinecoupling allows us to resolve substantial spin-orbit coupling effects in EDMRspectra, even at low magnetic field strengths.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[354.0, -1, ',', 5],[265.0, -1, ',', 4]

O
###Perdeuteration of poly[2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylenevinylene] (d-MEHPPV): control of microscopic charge-carrier spin-spin coupling and of magnetic-field effects in optoelectronic devices|Dani M. Stoltzfus,Gajadhar Joshi,Henna Popli,Shirin Jamali,Marzieh Kavand,Sebastian Milster,Tobias Grünbaum,Sebastian Bange,Adnan Nahlawi,Mandefro Y. Teferi,Sabastian I. Atwood,Anna E. Leung,Tamim A. Darwish,Hans Malissa,Paul L. Burn,John M. Lupton,Christoph Boehme###
(1552773, 1552773)
 These results illustrate thedramatic influence of hyperfine fields on the spin physics of organiclight-emitting diode (OLED) materials at room temperature, and point to routesto reaching exotic ultra-strong resonant-drive regimes needed for the study oflight-matter interactions.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[449.0, -1, ',', 6],[360.0, -1, ',', 5]

CrI3
###First-principles theory of proximity spin-orbit torque on a two-dimensional magnet: Current-driven antiferromagnet-to-ferromagnet reversible transition in bilayer CrI$_3$|Kapildeb Dolui,Marko D. Petrovic,Klaus Zollner,Petr Plechac,Jaroslav Fabian,Branislav K. Nikolic###
(1552883, 1552885)
First-principles theory of proximity spin-orbit torque on a two-dimensional magnet Current-driven antiferromagnet-to-ferromagnet reversible transition in bilayer CrI3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[533.0, 240, '%', 5]

CrI3
###First-principles theory of proximity spin-orbit torque on a two-dimensional magnet: Current-driven antiferromagnet-to-ferromagnet reversible transition in bilayer CrI$_3$|Kapildeb Dolui,Marko D. Petrovic,Klaus Zollner,Petr Plechac,Jaroslav Fabian,Branislav K. Nikolic###
(1552907, 1552909)
 The recently discovered two-dimensional (2D) magnetic insulator CrI3 is anintriguing case for basic research and spintronic applications since it is aferromagnet in the bulk, but an antiferromagnet in bilayer form, with itsmagnetic ordering amenable to external manipulations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[509.0, 240, '%', 4]

CrI3
###First-principles theory of proximity spin-orbit torque on a two-dimensional magnet: Current-driven antiferromagnet-to-ferromagnet reversible transition in bilayer CrI$_3$|Kapildeb Dolui,Marko D. Petrovic,Klaus Zollner,Petr Plechac,Jaroslav Fabian,Branislav K. Nikolic###
(1553022, 1553024)
 Using first-principlesquantum transport approach, we predict that injecting unpolarized chargecurrent parallel to the interface of bilayer-CrI3/monolayer-TaSe2 van derWaals heterostructure will induce spin-orbit torque (SOT) and thereby drivendynamics of magnetization on the first monolayer of CrI3 in direct contactwith TaSe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[394.0, 240, '%', 3]

TaSe2
###First-principles theory of proximity spin-orbit torque on a two-dimensional magnet: Current-driven antiferromagnet-to-ferromagnet reversible transition in bilayer CrI$_3$|Kapildeb Dolui,Marko D. Petrovic,Klaus Zollner,Petr Plechac,Jaroslav Fabian,Branislav K. Nikolic###
(1553028, 1553030)
 Using first-principlesquantum transport approach, we predict that injecting unpolarized chargecurrent parallel to the interface of bilayer-CrI3/monolayer-TaSe2 van derWaals heterostructure will induce spin-orbit torque (SOT) and thereby drivendynamics of magnetization on the first monolayer of CrI3 in direct contactwith TaSe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[388.0, 240, '%', 3]

SO
###First-principles theory of proximity spin-orbit torque on a two-dimensional magnet: Current-driven antiferromagnet-to-ferromagnet reversible transition in bilayer CrI$_3$|Kapildeb Dolui,Marko D. Petrovic,Klaus Zollner,Petr Plechac,Jaroslav Fabian,Branislav K. Nikolic###
(1553052, 1553053)
 Using first-principlesquantum transport approach, we predict that injecting unpolarized chargecurrent parallel to the interface of bilayer-CrI3/monolayer-TaSe2 van derWaals heterostructure will induce spin-orbit torque (SOT) and thereby drivendynamics of magnetization on the first monolayer of CrI3 in direct contactwith TaSe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[365.0, 240, '%', 3]

CrI3
###First-principles theory of proximity spin-orbit torque on a two-dimensional magnet: Current-driven antiferromagnet-to-ferromagnet reversible transition in bilayer CrI$_3$|Kapildeb Dolui,Marko D. Petrovic,Klaus Zollner,Petr Plechac,Jaroslav Fabian,Branislav K. Nikolic###
(1553080, 1553082)
 Using first-principlesquantum transport approach, we predict that injecting unpolarized chargecurrent parallel to the interface of bilayer-CrI3/monolayer-TaSe2 van derWaals heterostructure will induce spin-orbit torque (SOT) and thereby drivendynamics of magnetization on the first monolayer of CrI3 in direct contactwith TaSe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[336.0, 240, '%', 3]

TaSe2
###First-principles theory of proximity spin-orbit torque on a two-dimensional magnet: Current-driven antiferromagnet-to-ferromagnet reversible transition in bilayer CrI$_3$|Kapildeb Dolui,Marko D. Petrovic,Klaus Zollner,Petr Plechac,Jaroslav Fabian,Branislav K. Nikolic###
(1553093, 1553095)
 Using first-principlesquantum transport approach, we predict that injecting unpolarized chargecurrent parallel to the interface of bilayer-CrI3/monolayer-TaSe2 van derWaals heterostructure will induce spin-orbit torque (SOT) and thereby drivendynamics of magnetization on the first monolayer of CrI3 in direct contactwith TaSe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[323.0, 240, '%', 3]

SO
###First-principles theory of proximity spin-orbit torque on a two-dimensional magnet: Current-driven antiferromagnet-to-ferromagnet reversible transition in bilayer CrI$_3$|Kapildeb Dolui,Marko D. Petrovic,Klaus Zollner,Petr Plechac,Jaroslav Fabian,Branislav K. Nikolic###
(1553112, 1553113)
 By combining calculated complex angular dependence of SOT<missing VAR> withthe Landau-Lifshitz-Gilbert equation for classical dynamics of magnetization,we demonstrate that current pulses can switch the direction of magnetization onthe first monolayer to become parallel to that of the second monolayer, therebyconverting CrI3 from antiferromagnet to ferromagnet while not requiring anyexternal magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[305.0, 240, '%', 2]

CrI3
###First-principles theory of proximity spin-orbit torque on a two-dimensional magnet: Current-driven antiferromagnet-to-ferromagnet reversible transition in bilayer CrI$_3$|Kapildeb Dolui,Marko D. Petrovic,Klaus Zollner,Petr Plechac,Jaroslav Fabian,Branislav K. Nikolic###
(1553196, 1553198)
 By combining calculated complex angular dependence of SOT<missing VAR> withthe Landau-Lifshitz-Gilbert equation for classical dynamics of magnetization,we demonstrate that current pulses can switch the direction of magnetization onthe first monolayer to become parallel to that of the second monolayer, therebyconverting CrI3 from antiferromagnet to ferromagnet while not requiring anyexternal magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[220.0, 240, '%', 2]

CrI3
###First-principles theory of proximity spin-orbit torque on a two-dimensional magnet: Current-driven antiferromagnet-to-ferromagnet reversible transition in bilayer CrI$_3$|Kapildeb Dolui,Marko D. Petrovic,Klaus Zollner,Petr Plechac,Jaroslav Fabian,Branislav K. Nikolic###
(1553262, 1553264)
 We explain the mechanism of this reversiblecurrent-driven nonequilibrium phase transition by showing that first monolayerof CrI3 carries current due to evanescent wavefunctions injected by metallictransition metal dichalcogenide TaSe2, while concurrently acquiring strongspin-orbit coupling (SOC) via such proximity effect, whereas the secondmonolayer of CrI3 remains insulating.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 240, '%', 1]

TaSe2
###First-principles theory of proximity spin-orbit torque on a two-dimensional magnet: Current-driven antiferromagnet-to-ferromagnet reversible transition in bilayer CrI$_3$|Kapildeb Dolui,Marko D. Petrovic,Klaus Zollner,Petr Plechac,Jaroslav Fabian,Branislav K. Nikolic###
(1553291, 1553293)
 We explain the mechanism of this reversiblecurrent-driven nonequilibrium phase transition by showing that first monolayerof CrI3 carries current due to evanescent wavefunctions injected by metallictransition metal dichalcogenide TaSe2, while concurrently acquiring strongspin-orbit coupling (SOC) via such proximity effect, whereas the secondmonolayer of CrI3 remains insulating.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 240, '%', 1]

(SOC)
###First-principles theory of proximity spin-orbit torque on a two-dimensional magnet: Current-driven antiferromagnet-to-ferromagnet reversible transition in bilayer CrI$_3$|Kapildeb Dolui,Marko D. Petrovic,Klaus Zollner,Petr Plechac,Jaroslav Fabian,Branislav K. Nikolic###
(1553311, 1553315)
 We explain the mechanism of this reversiblecurrent-driven nonequilibrium phase transition by showing that first monolayerof CrI3 carries current due to evanescent wavefunctions injected by metallictransition metal dichalcogenide TaSe2, while concurrently acquiring strongspin-orbit coupling (SOC) via such proximity effect, whereas the secondmonolayer of CrI3 remains insulating.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 240, '%', 1]

CrI3
###First-principles theory of proximity spin-orbit torque on a two-dimensional magnet: Current-driven antiferromagnet-to-ferromagnet reversible transition in bilayer CrI$_3$|Kapildeb Dolui,Marko D. Petrovic,Klaus Zollner,Petr Plechac,Jaroslav Fabian,Branislav K. Nikolic###
(1553337, 1553339)
 We explain the mechanism of this reversiblecurrent-driven nonequilibrium phase transition by showing that first monolayerof CrI3 carries current due to evanescent wavefunctions injected by metallictransition metal dichalcogenide TaSe2, while concurrently acquiring strongspin-orbit coupling (SOC) via such proximity effect, whereas the secondmonolayer of CrI3 remains insulating.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 240, '%', 1]

W
###First-principles theory of proximity spin-orbit torque on a two-dimensional magnet: Current-driven antiferromagnet-to-ferromagnet reversible transition in bilayer CrI$_3$|Kapildeb Dolui,Marko D. Petrovic,Klaus Zollner,Petr Plechac,Jaroslav Fabian,Branislav K. Nikolic###
(1553372, 1553372)
 The transition can be detected bypassing vertical read current through the vdW heterostructure, encapsulated bybilayer of hexagonal boron nitride and sandwiched between graphite electrodes,where we find tunneling magnetoresistance of simeq 240%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 240, '%', 0]

UTe2
###Anisotropy of the Upper Critical Field in the Heavy-Fermion Superconductor UTe2 under Pressure|Georg Knebel,Motoi Kimata,Michal Vališka,Fuminori Honda,Dexin Li,Daniel Braithwaite,Gérard Lapertot,William Knafo,Alexandre Pourret,Yoshiki J. Sato,Yusei Shimizu,Takumi Kihara,Jean-Pascal Brison,Jacques Flouquet,Dai Aoki###
(1553927, 1553929)
Anisotropy of the Upper Critical Field in the Heavy-Fermion Superconductor UTe2 under Pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Anisotropy of the Upper Critical Field in the Heavy-Fermion Superconductor UTe2 under Pressure|Georg Knebel,Motoi Kimata,Michal Vališka,Fuminori Honda,Dexin Li,Daniel Braithwaite,Gérard Lapertot,William Knafo,Alexandre Pourret,Yoshiki J. Sato,Yusei Shimizu,Takumi Kihara,Jean-Pascal Brison,Jacques Flouquet,Dai Aoki###
(1553956, 1553956)
 We studied the anisotropy of the superconducting upper critical field Hrmc<missing VAR>2 in the heavy-fermion superconductor UTe2 under hydrostatic pressure bymagnetoresistivity measurements.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

UTe2
###Anisotropy of the Upper Critical Field in the Heavy-Fermion Superconductor UTe2 under Pressure|Georg Knebel,Motoi Kimata,Michal Vališka,Fuminori Honda,Dexin Li,Daniel Braithwaite,Gérard Lapertot,William Knafo,Alexandre Pourret,Yoshiki J. Sato,Yusei Shimizu,Takumi Kihara,Jean-Pascal Brison,Jacques Flouquet,Dai Aoki###
(1553973, 1553975)
 We studied the anisotropy of the superconducting upper critical field Hrmc<missing VAR>2 in the heavy-fermion superconductor UTe2 under hydrostatic pressure bymagnetoresistivity measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Anisotropy of the Upper Critical Field in the Heavy-Fermion Superconductor UTe2 under Pressure|Georg Knebel,Motoi Kimata,Michal Vališka,Fuminori Honda,Dexin Li,Daniel Braithwaite,Gérard Lapertot,William Knafo,Alexandre Pourret,Yoshiki J. Sato,Yusei Shimizu,Takumi Kihara,Jean-Pascal Brison,Jacques Flouquet,Dai Aoki###
(1553991, 1553991)
 In agreement with previous experiments weconfirm that superconductivity disappears near a critical pressure p<missing VAR>rm c<missing VAR>approx 1.5G<missing VAR>Pa, and a magnetically ordered state appears.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pa
###Anisotropy of the Upper Critical Field in the Heavy-Fermion Superconductor UTe2 under Pressure|Georg Knebel,Motoi Kimata,Michal Vališka,Fuminori Honda,Dexin Li,Daniel Braithwaite,Gérard Lapertot,William Knafo,Alexandre Pourret,Yoshiki J. Sato,Yusei Shimizu,Takumi Kihara,Jean-Pascal Brison,Jacques Flouquet,Dai Aoki###
(1554030, 1554030)
 In agreement with previous experiments weconfirm that superconductivity disappears near a critical pressure p<missing VAR>rm c<missing VAR>approx 1.5G<missing VAR>Pa, and a magnetically ordered state appears.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Anisotropy of the Upper Critical Field in the Heavy-Fermion Superconductor UTe2 under Pressure|Georg Knebel,Motoi Kimata,Michal Vališka,Fuminori Honda,Dexin Li,Daniel Braithwaite,Gérard Lapertot,William Knafo,Alexandre Pourret,Yoshiki J. Sato,Yusei Shimizu,Takumi Kihara,Jean-Pascal Brison,Jacques Flouquet,Dai Aoki###
(1554050, 1554050)
 The unusual Hrmc<missing VAR>2(T) at low temperatures for H parallel a suggests that the multiplesuperconducting phases which appear under pressure have quite different Hrmc<missing VAR>2.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Anisotropy of the Upper Critical Field in the Heavy-Fermion Superconductor UTe2 under Pressure|Georg Knebel,Motoi Kimata,Michal Vališka,Fuminori Honda,Dexin Li,Daniel Braithwaite,Gérard Lapertot,William Knafo,Alexandre Pourret,Yoshiki J. Sato,Yusei Shimizu,Takumi Kihara,Jean-Pascal Brison,Jacques Flouquet,Dai Aoki###
(1554068, 1554068)
 The unusual Hrmc<missing VAR>2(T) at low temperatures for H parallel a suggests that the multiplesuperconducting phases which appear under pressure have quite different Hrmc<missing VAR>2.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Anisotropy of the Upper Critical Field in the Heavy-Fermion Superconductor UTe2 under Pressure|Georg Knebel,Motoi Kimata,Michal Vališka,Fuminori Honda,Dexin Li,Daniel Braithwaite,Gérard Lapertot,William Knafo,Alexandre Pourret,Yoshiki J. Sato,Yusei Shimizu,Takumi Kihara,Jean-Pascal Brison,Jacques Flouquet,Dai Aoki###
(1554101, 1554101)
 The unusual Hrmc<missing VAR>2(T) at low temperatures for H parallel a suggests that the multiplesuperconducting phases which appear under pressure have quite different Hrmc<missing VAR>2.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Anisotropy of the Upper Critical Field in the Heavy-Fermion Superconductor UTe2 under Pressure|Georg Knebel,Motoi Kimata,Michal Vališka,Fuminori Honda,Dexin Li,Daniel Braithwaite,Gérard Lapertot,William Knafo,Alexandre Pourret,Yoshiki J. Sato,Yusei Shimizu,Takumi Kihara,Jean-Pascal Brison,Jacques Flouquet,Dai Aoki###
(1554129, 1554129)
 For a field applied along the hard magnetization b<missing VAR> axis Hrm c<missing VAR>2(0) is glued to the metamagnetic transition Hrm m<missing VAR> which is suppressednear p<missing VAR>rm c<missing VAR>.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Anisotropy of the Upper Critical Field in the Heavy-Fermion Superconductor UTe2 under Pressure|Georg Knebel,Motoi Kimata,Michal Vališka,Fuminori Honda,Dexin Li,Daniel Braithwaite,Gérard Lapertot,William Knafo,Alexandre Pourret,Yoshiki J. Sato,Yusei Shimizu,Takumi Kihara,Jean-Pascal Brison,Jacques Flouquet,Dai Aoki###
(1554152, 1554152)
 For a field applied along the hard magnetization b<missing VAR> axis Hrm c<missing VAR>2(0) is glued to the metamagnetic transition Hrm m<missing VAR> which is suppressednear p<missing VAR>rm c<missing VAR>.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Anisotropy of the Upper Critical Field in the Heavy-Fermion Superconductor UTe2 under Pressure|Georg Knebel,Motoi Kimata,Michal Vališka,Fuminori Honda,Dexin Li,Daniel Braithwaite,Gérard Lapertot,William Knafo,Alexandre Pourret,Yoshiki J. Sato,Yusei Shimizu,Takumi Kihara,Jean-Pascal Brison,Jacques Flouquet,Dai Aoki###
(1554178, 1554178)
 The suppression of Hrm m<missing VAR> with pressure follows thedecrease of temperature T<missing VAR>chirm max, at the maximum in thesusceptibility along b<missing VAR>.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Anisotropy of the Upper Critical Field in the Heavy-Fermion Superconductor UTe2 under Pressure|Georg Knebel,Motoi Kimata,Michal Vališka,Fuminori Honda,Dexin Li,Daniel Braithwaite,Gérard Lapertot,William Knafo,Alexandre Pourret,Yoshiki J. Sato,Yusei Shimizu,Takumi Kihara,Jean-Pascal Brison,Jacques Flouquet,Dai Aoki###
(1554231, 1554231)
 The strong reinforcement of Hrm c<missing VAR>2 at ambientpressure for H parallel b<missing VAR> above 16T<missing VAR> is rapidly suppressed under pressuredue to the increase of T<missing VAR>rm sc and the decrease of Hrm m<missing VAR>.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Anisotropy of the Upper Critical Field in the Heavy-Fermion Superconductor UTe2 under Pressure|Georg Knebel,Motoi Kimata,Michal Vališka,Fuminori Honda,Dexin Li,Daniel Braithwaite,Gérard Lapertot,William Knafo,Alexandre Pourret,Yoshiki J. Sato,Yusei Shimizu,Takumi Kihara,Jean-Pascal Brison,Jacques Flouquet,Dai Aoki###
(1554246, 1554246)
 The strong reinforcement of Hrm c<missing VAR>2 at ambientpressure for H parallel b<missing VAR> above 16T<missing VAR> is rapidly suppressed under pressuredue to the increase of T<missing VAR>rm sc and the decrease of Hrm m<missing VAR>.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Anisotropy of the Upper Critical Field in the Heavy-Fermion Superconductor UTe2 under Pressure|Georg Knebel,Motoi Kimata,Michal Vališka,Fuminori Honda,Dexin Li,Daniel Braithwaite,Gérard Lapertot,William Knafo,Alexandre Pourret,Yoshiki J. Sato,Yusei Shimizu,Takumi Kihara,Jean-Pascal Brison,Jacques Flouquet,Dai Aoki###
(1554291, 1554291)
 The strong reinforcement of Hrm c<missing VAR>2 at ambientpressure for H parallel b<missing VAR> above 16T<missing VAR> is rapidly suppressed under pressuredue to the increase of T<missing VAR>rm sc and the decrease of Hrm m<missing VAR>.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Anisotropy of the Upper Critical Field in the Heavy-Fermion Superconductor UTe2 under Pressure|Georg Knebel,Motoi Kimata,Michal Vališka,Fuminori Honda,Dexin Li,Daniel Braithwaite,Gérard Lapertot,William Knafo,Alexandre Pourret,Yoshiki J. Sato,Yusei Shimizu,Takumi Kihara,Jean-Pascal Brison,Jacques Flouquet,Dai Aoki###
(1554316, 1554316)
 The changein the hierarchy of the anisotropy of Hrm c<missing VAR>2(0) on approaching p<missing VAR>rmc<missing VAR> points out that the c<missing VAR> axis becomes the hard magnetization axis.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Evidence of tunable magnetic coupling in hydrogenated graphene|Shimin Cao,Chuanwu Cao,Shibing Tian,Jian-Hao Chen###
(1554447, 1554447)
 At the meantime, the large negativemagnetoresistance (MR) widely observed in these systems is not well understood,nor had it been associated with the presence of magnetic moments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Evidence of tunable magnetic coupling in hydrogenated graphene|Shimin Cao,Chuanwu Cao,Shibing Tian,Jian-Hao Chen###
(1554511, 1554511)
 In thispaper, we study the systematic evolution of the large negative MR of in-situhydrogenated graphene in ultra-high vacuum (UHV) environment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(UHV)
###Evidence of tunable magnetic coupling in hydrogenated graphene|Shimin Cao,Chuanwu Cao,Shibing Tian,Jian-Hao Chen###
(1554559, 1554563)
 In thispaper, we study the systematic evolution of the large negative MR of in-situhydrogenated graphene in ultra-high vacuum (UHV) environment.
Featurization successful!
0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Evidence of tunable magnetic coupling in hydrogenated graphene|Shimin Cao,Chuanwu Cao,Shibing Tian,Jian-Hao Chen###
(1554598, 1554598)
 We find for mostcombination of electron density (ne) and hydrogen density (n<missing VAR>H), MR atdifferent temperature can be scaled to alpha(muBB)/[k<missing VAR>B(T-T)], whereT<missing VAR> is the Curie-Weiss temperature.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Evidence of tunable magnetic coupling in hydrogenated graphene|Shimin Cao,Chuanwu Cao,Shibing Tian,Jian-Hao Chen###
(1554624, 1554624)
 We find for mostcombination of electron density (ne) and hydrogen density (n<missing VAR>H), MR atdifferent temperature can be scaled to alpha(muBB)/[k<missing VAR>B(T-T)], whereT<missing VAR> is the Curie-Weiss temperature.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Evidence of tunable magnetic coupling in hydrogenated graphene|Shimin Cao,Chuanwu Cao,Shibing Tian,Jian-Hao Chen###
(1554629, 1554629)
 We find for mostcombination of electron density (ne) and hydrogen density (n<missing VAR>H), MR atdifferent temperature can be scaled to alpha(muBB)/[k<missing VAR>B(T-T)], whereT<missing VAR> is the Curie-Weiss temperature.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Evidence of tunable magnetic coupling in hydrogenated graphene|Shimin Cao,Chuanwu Cao,Shibing Tian,Jian-Hao Chen###
(1554821, 1554821)
 Wealso find that localized impurity states introduced by H adatoms could modifythe capacitance of hydrogenated graphene.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Giant gate-controlled odd-parity magnetoresistance in one-dimensional channels with a magnetic proximity effect|Kosuke Takiguchi,Le Duc Anh,Takahiro Chiba,Ryota Fukuzawa,Takuji Takahashi,Masaaki Tanaka###
(1554981, 1554981)
 According to Onsagers<missing VAR> principle, electrical resistance R<missing VAR> of generalconductors behaves as an even function of external magnetic field B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 2, '%', 2],[130.0, 27, '%', 3],[376.0, 1, 'D', 6]

S
###Giant gate-controlled odd-parity magnetoresistance in one-dimensional channels with a magnetic proximity effect|Kosuke Takiguchi,Le Duc Anh,Takahiro Chiba,Ryota Fukuzawa,Takuji Takahashi,Masaaki Tanaka###
(1555007, 1555007)
 Only inspecial circumstances, which involve time reversal symmetry (TRS) broken byferromagnetism, the odd component of R<missing VAR> against B is observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 2, '%', 1],[104.0, 27, '%', 2],[350.0, 1, 'D', 5]

B
###Giant gate-controlled odd-parity magnetoresistance in one-dimensional channels with a magnetic proximity effect|Kosuke Takiguchi,Le Duc Anh,Takahiro Chiba,Ryota Fukuzawa,Takuji Takahashi,Masaaki Tanaka###
(1555030, 1555030)
 Only inspecial circumstances, which involve time reversal symmetry (TRS) broken byferromagnetism, the odd component of R<missing VAR> against B is observed.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 2, '%', 1],[81.0, 27, '%', 2],[327.0, 1, 'D', 5]

O
###Giant gate-controlled odd-parity magnetoresistance in one-dimensional channels with a magnetic proximity effect|Kosuke Takiguchi,Le Duc Anh,Takahiro Chiba,Ryota Fukuzawa,Takuji Takahashi,Masaaki Tanaka###
(1555054, 1555054)
 This unusualphenomenon, called odd-parity magnetoresistance (OMR), was hitherto subtle (<2%) and hard to control by external means.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 2, '%', 0],[57.0, 27, '%', 1],[303.0, 1, 'D', 4]

O
###Giant gate-controlled odd-parity magnetoresistance in one-dimensional channels with a magnetic proximity effect|Kosuke Takiguchi,Le Duc Anh,Takahiro Chiba,Ryota Fukuzawa,Takuji Takahashi,Masaaki Tanaka###
(1555100, 1555100)
 Here, we report a giant OMR as largeas 27% in edge transport channels of an InAs quantum well, which is magnetizedby a proximity effect from an underlying ferromagnetic semiconductor (Ga,Fe)Sblayer.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 2, '%', 1],[11.0, 27, '%', 0],[257.0, 1, 'D', 3]

InAs
###Giant gate-controlled odd-parity magnetoresistance in one-dimensional channels with a magnetic proximity effect|Kosuke Takiguchi,Le Duc Anh,Takahiro Chiba,Ryota Fukuzawa,Takuji Takahashi,Masaaki Tanaka###
(1555126, 1555127)
 Here, we report a giant OMR as largeas 27% in edge transport channels of an InAs quantum well, which is magnetizedby a proximity effect from an underlying ferromagnetic semiconductor (Ga,Fe)Sblayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 2, '%', 1],[15.0, 27, '%', 0],[230.0, 1, 'D', 3]

Ga
###Giant gate-controlled odd-parity magnetoresistance in one-dimensional channels with a magnetic proximity effect|Kosuke Takiguchi,Le Duc Anh,Takahiro Chiba,Ryota Fukuzawa,Takuji Takahashi,Masaaki Tanaka###
(1555160, 1555160)
 Here, we report a giant OMR as largeas 27% in edge transport channels of an InAs quantum well, which is magnetizedby a proximity effect from an underlying ferromagnetic semiconductor (Ga,Fe)Sblayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 2, '%', 1],[49.0, 27, '%', 0],[197.0, 1, 'D', 3]

Fe
###Giant gate-controlled odd-parity magnetoresistance in one-dimensional channels with a magnetic proximity effect|Kosuke Takiguchi,Le Duc Anh,Takahiro Chiba,Ryota Fukuzawa,Takuji Takahashi,Masaaki Tanaka###
(1555162, 1555162)
 Here, we report a giant OMR as largeas 27% in edge transport channels of an InAs quantum well, which is magnetizedby a proximity effect from an underlying ferromagnetic semiconductor (Ga,Fe)Sblayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 2, '%', 1],[51.0, 27, '%', 0],[195.0, 1, 'D', 3]

Sb
###Giant gate-controlled odd-parity magnetoresistance in one-dimensional channels with a magnetic proximity effect|Kosuke Takiguchi,Le Duc Anh,Takahiro Chiba,Ryota Fukuzawa,Takuji Takahashi,Masaaki Tanaka###
(1555164, 1555164)
 Here, we report a giant OMR as largeas 27% in edge transport channels of an InAs quantum well, which is magnetizedby a proximity effect from an underlying ferromagnetic semiconductor (Ga,Fe)Sblayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 2, '%', 1],[53.0, 27, '%', 0],[193.0, 1, 'D', 3]

S
###Giant gate-controlled odd-parity magnetoresistance in one-dimensional channels with a magnetic proximity effect|Kosuke Takiguchi,Le Duc Anh,Takahiro Chiba,Ryota Fukuzawa,Takuji Takahashi,Masaaki Tanaka###
(1555214, 1555214)
 Combining experimental results and theoretical analysis using thelinearized Boltzmanns<missing VAR> equation, we found that simultaneous breaking of boththe TRS by the magnetic proximity effect (MPE) and spatial inversion symmetry(SIS) in the one-dimensional (1D) InAs edge channels is the origin of thisgiant OMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 2, '%', 2],[103.0, 27, '%', 1],[143.0, 1, 'D', 2]

(SIS)
###Giant gate-controlled odd-parity magnetoresistance in one-dimensional channels with a magnetic proximity effect|Kosuke Takiguchi,Le Duc Anh,Takahiro Chiba,Ryota Fukuzawa,Takuji Takahashi,Masaaki Tanaka###
(1555241, 1555245)
 Combining experimental results and theoretical analysis using thelinearized Boltzmanns<missing VAR> equation, we found that simultaneous breaking of boththe TRS by the magnetic proximity effect (MPE) and spatial inversion symmetry(SIS) in the one-dimensional (1D) InAs edge channels is the origin of thisgiant OMR.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[171.0, 2, '%', 2],[130.0, 27, '%', 1],[112.0, 1, 'D', 2]

InAs
###Giant gate-controlled odd-parity magnetoresistance in one-dimensional channels with a magnetic proximity effect|Kosuke Takiguchi,Le Duc Anh,Takahiro Chiba,Ryota Fukuzawa,Takuji Takahashi,Masaaki Tanaka###
(1555260, 1555261)
 Combining experimental results and theoretical analysis using thelinearized Boltzmanns<missing VAR> equation, we found that simultaneous breaking of boththe TRS by the magnetic proximity effect (MPE) and spatial inversion symmetry(SIS) in the one-dimensional (1D) InAs edge channels is the origin of thisgiant OMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[190.0, 2, '%', 2],[149.0, 27, '%', 1],[96.0, 1, 'D', 2]

O
###Giant gate-controlled odd-parity magnetoresistance in one-dimensional channels with a magnetic proximity effect|Kosuke Takiguchi,Le Duc Anh,Takahiro Chiba,Ryota Fukuzawa,Takuji Takahashi,Masaaki Tanaka###
(1555280, 1555280)
 Combining experimental results and theoretical analysis using thelinearized Boltzmanns<missing VAR> equation, we found that simultaneous breaking of boththe TRS by the magnetic proximity effect (MPE) and spatial inversion symmetry(SIS) in the one-dimensional (1D) InAs edge channels is the origin of thisgiant OMR.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[210.0, 2, '%', 2],[169.0, 27, '%', 1],[77.0, 1, 'D', 2]

O
###Giant gate-controlled odd-parity magnetoresistance in one-dimensional channels with a magnetic proximity effect|Kosuke Takiguchi,Le Duc Anh,Takahiro Chiba,Ryota Fukuzawa,Takuji Takahashi,Masaaki Tanaka###
(1555307, 1555307)
 We also demonstrated the ability to turn on and off the OMR usingelectrical gating of either TRS or SIS in the edge channels.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[237.0, 2, '%', 3],[196.0, 27, '%', 2],[50.0, 1, 'D', 1]

S
###Giant gate-controlled odd-parity magnetoresistance in one-dimensional channels with a magnetic proximity effect|Kosuke Takiguchi,Le Duc Anh,Takahiro Chiba,Ryota Fukuzawa,Takuji Takahashi,Masaaki Tanaka###
(1555324, 1555324)
 We also demonstrated the ability to turn on and off the OMR usingelectrical gating of either TRS or SIS in the edge channels.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[254.0, 2, '%', 3],[213.0, 27, '%', 2],[33.0, 1, 'D', 1]

SIS
###Giant gate-controlled odd-parity magnetoresistance in one-dimensional channels with a magnetic proximity effect|Kosuke Takiguchi,Le Duc Anh,Takahiro Chiba,Ryota Fukuzawa,Takuji Takahashi,Masaaki Tanaka###
(1555328, 1555330)
 We also demonstrated the ability to turn on and off the OMR usingelectrical gating of either TRS or SIS in the edge channels.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[258.0, 2, '%', 3],[217.0, 27, '%', 2],[27.0, 1, 'D', 1]

In
###Generalized magnetoelectronic circuit theory and spin relaxation at interfaces in magnetic multilayers|G. G. Baez Flores,Alexey A. Kovalev,M. van Schilfgaarde,K. D. Belashchenko###
(1555884, 1555884)
 In particular, spin current is partially absorbed at theinterface due to spin-orbit coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NN
###Generalized magnetoelectronic circuit theory and spin relaxation at interfaces in magnetic multilayers|G. G. Baez Flores,Alexey A. Kovalev,M. van Schilfgaarde,K. D. Belashchenko###
(1556132, 1556133)
 We calculate the spin-flip scattering rates forNN, FN, FF interfaces using the Landauer-Buttiker method within the linearmuffin-tin orbital method and determine the values of delta using circuittheory.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FN
###Generalized magnetoelectronic circuit theory and spin relaxation at interfaces in magnetic multilayers|G. G. Baez Flores,Alexey A. Kovalev,M. van Schilfgaarde,K. D. Belashchenko###
(1556136, 1556137)
 We calculate the spin-flip scattering rates forNN, FN, FF interfaces using the Landauer-Buttiker method within the linearmuffin-tin orbital method and determine the values of delta using circuittheory.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FF
###Generalized magnetoelectronic circuit theory and spin relaxation at interfaces in magnetic multilayers|G. G. Baez Flores,Alexey A. Kovalev,M. van Schilfgaarde,K. D. Belashchenko###
(1556140, 1556141)
 We calculate the spin-flip scattering rates forNN, FN, FF interfaces using the Landauer-Buttiker method within the linearmuffin-tin orbital method and determine the values of delta using circuittheory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Generalized magnetoelectronic circuit theory and spin relaxation at interfaces in magnetic multilayers|G. G. Baez Flores,Alexey A. Kovalev,M. van Schilfgaarde,K. D. Belashchenko###
(1556151, 1556151)
 We calculate the spin-flip scattering rates forNN, FN, FF interfaces using the Landauer-Buttiker method within the linearmuffin-tin orbital method and determine the values of delta using circuittheory.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoTe2
###Pressure induced topological quantum phase transition in Weyl semimetal T_d-MoTe_2|Z. Guguchia,A. M. dos Santos,F. O. von Rohr,J. J. Molaison,S. Banerjee,D. Rhodes,J. -X. Yin,R. Khasanov,J. Hone,Y. J. Uemura,M. -Z. Hasan,H. Luetkens,E. S. Bozin,A. Amato###
(1556220, 1556222)
Pressure induced topological quantum phase transition in Weyl semimetal Td-MoTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 1.5, 'GPa', 1],[93.0, 1, 'T', 2],[111.0, 1.2, 'GPa', 2]

MoTe2
###Pressure induced topological quantum phase transition in Weyl semimetal T_d-MoTe_2|Z. Guguchia,A. M. dos Santos,F. O. von Rohr,J. J. Molaison,S. Banerjee,D. Rhodes,J. -X. Yin,R. Khasanov,J. Hone,Y. J. Uemura,M. -Z. Hasan,H. Luetkens,E. S. Bozin,A. Amato###
(1556262, 1556264)
 We report the pressure (p<missing VAR>max  1.5 GPa) evolution of the crystal structureof the Weyl semimetal Td-MoTe2 by means of neutron diffraction experiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 1.5, 'GPa', 0],[51.0, 1, 'T', 1],[69.0, 1.2, 'GPa', 1]

SC
###Pressure induced topological quantum phase transition in Weyl semimetal T_d-MoTe_2|Z. Guguchia,A. M. dos Santos,F. O. von Rohr,J. J. Molaison,S. Banerjee,D. Rhodes,J. -X. Yin,R. Khasanov,J. Hone,Y. J. Uemura,M. -Z. Hasan,H. Luetkens,E. S. Bozin,A. Amato###
(1556435, 1556436)
 Although the topological QPT has strong effect on magnetoresistance, itis interesting that the superconducting critical temperature Tc, thesuperfluid density, and the SC gap all change smoothly and continuously acrossp<missing VAR>cr and no sudden effects are seen concomitantly with the suppression of theTd structure.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[198.0, 1.5, 'GPa', 3],[120.0, 1, 'T', 2],[102.0, 1.2, 'GPa', 2]

SC
###Pressure induced topological quantum phase transition in Weyl semimetal T_d-MoTe_2|Z. Guguchia,A. M. dos Santos,F. O. von Rohr,J. J. Molaison,S. Banerjee,D. Rhodes,J. -X. Yin,R. Khasanov,J. Hone,Y. J. Uemura,M. -Z. Hasan,H. Luetkens,E. S. Bozin,A. Amato###
(1556505, 1556506)
 This implies that the Tc, and thus the SC pairing strength, isunaffected by the topological QPT.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[268.0, 1.5, 'GPa', 4],[190.0, 1, 'T', 3],[172.0, 1.2, 'GPa', 3]

SC
###Pressure induced topological quantum phase transition in Weyl semimetal T_d-MoTe_2|Z. Guguchia,A. M. dos Santos,F. O. von Rohr,J. J. Molaison,S. Banerjee,D. Rhodes,J. -X. Yin,R. Khasanov,J. Hone,Y. J. Uemura,M. -Z. Hasan,H. Luetkens,E. S. Bozin,A. Amato###
(1556549, 1556550)
 However, the QPT requires the change in theSC gap symmetry from non-trivial s<missing VAR>- to a trivial s<missing VAR> state, which we discussin this work.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[312.0, 1.5, 'GPa', 5],[234.0, 1, 'T', 4],[216.0, 1.2, 'GPa', 4]

C
###Influence of ion implantation on the magnetic and transport properties of manganite films|M. Sirena,A. Zimmers,N. Haberkorn,E. Kaul,L. B. Steren,J. Lesueur,T. Wolf,Y. Le Gall,J. -J. Grob,G. Faini###
(1556727, 1556727)
 Conductive atomic force microscopy CAFM),transport and magnetic measurements were performed to analyze the influence ofthe implantation process in the physical properties of the films.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Influence of ion implantation on the magnetic and transport properties of manganite films|M. Sirena,A. Zimmers,N. Haberkorn,E. Kaul,L. B. Steren,J. Lesueur,T. Wolf,Y. Le Gall,J. -J. Grob,G. Faini###
(1556729, 1556729)
 Conductive atomic force microscopy CAFM),transport and magnetic measurements were performed to analyze the influence ofthe implantation process in the physical properties of the films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Influence of ion implantation on the magnetic and transport properties of manganite films|M. Sirena,A. Zimmers,N. Haberkorn,E. Kaul,L. B. Steren,J. Lesueur,T. Wolf,Y. Le Gall,J. -J. Grob,G. Faini###
(1556779, 1556779)
 CAFM<missing VAR> imagesshow regions with different conductivity values, probably due to the randomdistribution of point defect or inhomogeneous changes of the local Mn3/4ratio to reduce lattice strains of the irradiated areas.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Influence of ion implantation on the magnetic and transport properties of manganite films|M. Sirena,A. Zimmers,N. Haberkorn,E. Kaul,L. B. Steren,J. Lesueur,T. Wolf,Y. Le Gall,J. -J. Grob,G. Faini###
(1556781, 1556781)
 CAFM<missing VAR> imagesshow regions with different conductivity values, probably due to the randomdistribution of point defect or inhomogeneous changes of the local Mn3/4ratio to reduce lattice strains of the irradiated areas.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn3
###Influence of ion implantation on the magnetic and transport properties of manganite films|M. Sirena,A. Zimmers,N. Haberkorn,E. Kaul,L. B. Steren,J. Lesueur,T. Wolf,Y. Le Gall,J. -J. Grob,G. Faini###
(1556831, 1556832)
 CAFM<missing VAR> imagesshow regions with different conductivity values, probably due to the randomdistribution of point defect or inhomogeneous changes of the local Mn3/4ratio to reduce lattice strains of the irradiated areas.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Influence of ion implantation on the magnetic and transport properties of manganite films|M. Sirena,A. Zimmers,N. Haberkorn,E. Kaul,L. B. Steren,J. Lesueur,T. Wolf,Y. Le Gall,J. -J. Grob,G. Faini###
(1556937, 1556937)
 Disorder increases the distance between conducting regions, lowering theobserved TMI.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Influence of ion implantation on the magnetic and transport properties of manganite films|M. Sirena,A. Zimmers,N. Haberkorn,E. Kaul,L. B. Steren,J. Lesueur,T. Wolf,Y. Le Gall,J. -J. Grob,G. Faini###
(1557051, 1557051)
 As a consequence, animportant decoupling between the magnetic and the metal-insulator transition isfound for ion irradiated films as opposed to the classical double exchangemodel scenario.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tb5Si3
###Influence of pressure on the magnetic behavior and the anomalous magnetoresistance in Tb5Si3|Niharika Mohapatra,Sitikantha D Das,K. Mukherjee,Kartik K Iyer,E. V. Sampathkumaran###
(1557146, 1557149)
Influence of pressure on the magnetic behavior and the anomalous magnetoresistance in Tb5Si3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.375,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.625,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[245.0, 5, 'and', 3],[246.0, 20, 'K', 3]

Tb5Si3
###Influence of pressure on the magnetic behavior and the anomalous magnetoresistance in Tb5Si3|Niharika Mohapatra,Sitikantha D Das,K. Mukherjee,Kartik K Iyer,E. V. Sampathkumaran###
(1557157, 1557160)
 The compound, Tb5Si3, crystallizing in Mn5Si3-type hexagonal structure, wasrecently reported by us to exhibit a sudden and huge enhancement in electricalresistivity (rho) at a critical magnetic field (Hcr) in the magneticallyordered state (<70 K) tracking isothermal magnetization (M) behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.375,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.625,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[234.0, 5, 'and', 2],[235.0, 20, 'K', 2]

Mn5Si3
###Influence of pressure on the magnetic behavior and the anomalous magnetoresistance in Tb5Si3|Niharika Mohapatra,Sitikantha D Das,K. Mukherjee,Kartik K Iyer,E. V. Sampathkumaran###
(1557167, 1557170)
 The compound, Tb5Si3, crystallizing in Mn5Si3-type hexagonal structure, wasrecently reported by us to exhibit a sudden and huge enhancement in electricalresistivity (rho) at a critical magnetic field (Hcr) in the magneticallyordered state (<70 K) tracking isothermal magnetization (M) behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.375,0,0,0,0,0,0,0,0,0,0,0.625,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[224.0, 5, 'and', 2],[225.0, 20, 'K', 2]

H
###Influence of pressure on the magnetic behavior and the anomalous magnetoresistance in Tb5Si3|Niharika Mohapatra,Sitikantha D Das,K. Mukherjee,Kartik K Iyer,E. V. Sampathkumaran###
(1557226, 1557226)
 The compound, Tb5Si3, crystallizing in Mn5Si3-type hexagonal structure, wasrecently reported by us to exhibit a sudden and huge enhancement in electricalresistivity (rho) at a critical magnetic field (Hcr) in the magneticallyordered state (<70 K) tracking isothermal magnetization (M) behavior.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[168.0, 5, 'and', 2],[169.0, 20, 'K', 2]

K
###Influence of pressure on the magnetic behavior and the anomalous magnetoresistance in Tb5Si3|Niharika Mohapatra,Sitikantha D Das,K. Mukherjee,Kartik K Iyer,E. V. Sampathkumaran###
(1557245, 1557245)
 The compound, Tb5Si3, crystallizing in Mn5Si3-type hexagonal structure, wasrecently reported by us to exhibit a sudden and huge enhancement in electricalresistivity (rho) at a critical magnetic field (Hcr) in the magneticallyordered state (<70 K) tracking isothermal magnetization (M) behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 5, 'and', 2],[150.0, 20, 'K', 2]

Ge
###Influence of pressure on the magnetic behavior and the anomalous magnetoresistance in Tb5Si3|Niharika Mohapatra,Sitikantha D Das,K. Mukherjee,Kartik K Iyer,E. V. Sampathkumaran###
(1557298, 1557298)
 We haveinvestigated the influence of external pressure (<15 kbar) and negativechemical pressure induced by Ge substitution for Si on M<missing VAR> and rho as a functionof temperature (5-300 K) and magnetic field (<120 k<missing VAR>Oe), with the primary aim ofunderstanding the field-induced anomalies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 5, 'and', 1],[97.0, 20, 'K', 1]

Si
###Influence of pressure on the magnetic behavior and the anomalous magnetoresistance in Tb5Si3|Niharika Mohapatra,Sitikantha D Das,K. Mukherjee,Kartik K Iyer,E. V. Sampathkumaran###
(1557304, 1557304)
 We haveinvestigated the influence of external pressure (<15 kbar) and negativechemical pressure induced by Ge substitution for Si on M<missing VAR> and rho as a functionof temperature (5-300 K) and magnetic field (<120 k<missing VAR>Oe), with the primary aim ofunderstanding the field-induced anomalies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 5, 'and', 1],[91.0, 20, 'K', 1]

K
###Influence of pressure on the magnetic behavior and the anomalous magnetoresistance in Tb5Si3|Niharika Mohapatra,Sitikantha D Das,K. Mukherjee,Kartik K Iyer,E. V. Sampathkumaran###
(1557330, 1557330)
 We haveinvestigated the influence of external pressure (<15 kbar) and negativechemical pressure induced by Ge substitution for Si on M<missing VAR> and rho as a functionof temperature (5-300 K) and magnetic field (<120 k<missing VAR>Oe), with the primary aim ofunderstanding the field-induced anomalies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 5, 'and', 1],[65.0, 20, 'K', 1]

H
###Influence of pressure on the magnetic behavior and the anomalous magnetoresistance in Tb5Si3|Niharika Mohapatra,Sitikantha D Das,K. Mukherjee,Kartik K Iyer,E. V. Sampathkumaran###
(1557445, 1557445)
 Focussing on isothermal M<missing VAR> andmagnetoresistance (MR) at two temperatures, 5 and 20K, we find that this rhoanomaly persists under external as well as negative chemical pressures, howeverwith a large change in the Hcr.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 5, 'and', 0],[50.0, 20, 'K', 0]

H
###Influence of pressure on the magnetic behavior and the anomalous magnetoresistance in Tb5Si3|Niharika Mohapatra,Sitikantha D Das,K. Mukherjee,Kartik K Iyer,E. V. Sampathkumaran###
(1557457, 1557457)
 The pressure-derivative of Hcr is negativeand this trend and the MR behavior at the Hcr are comparable to that observedin some Laves phase itinerant magnetic systems.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 5, 'and', 1],[62.0, 20, 'K', 1]

H
###Influence of pressure on the magnetic behavior and the anomalous magnetoresistance in Tb5Si3|Niharika Mohapatra,Sitikantha D Das,K. Mukherjee,Kartik K Iyer,E. V. Sampathkumaran###
(1557484, 1557484)
 The pressure-derivative of Hcr is negativeand this trend and the MR behavior at the Hcr are comparable to that observedin some Laves phase itinerant magnetic systems.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 5, 'and', 1],[89.0, 20, 'K', 1]

Sr
###Resonant soft x-ray scattering from La(1-x)Sr(x)MnO(3) quantum wire arrays|X. M. Chen,E. M. Spanton,S. Wang,J. C. T. Lee,S. Smadici,X. Zhai,T. Naibert,J. N. Eckstein,A. Bhattacharya,T. Santos,R. Budakian,P. Abbamonte###
(1557593, 1557593)
Resonant soft x<missing VAR>-ray scattering from La(1-x)Sr(x)MnO(3) quantum wire arrays.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 5000, 'wires', 2],[145.0, 80, 'nm', 2],[229.0, 2, ',', 4]

S
###Resonant soft x-ray scattering from La(1-x)Sr(x)MnO(3) quantum wire arrays|X. M. Chen,E. M. Spanton,S. Wang,J. C. T. Lee,S. Smadici,X. Zhai,T. Naibert,J. N. Eckstein,A. Bhattacharya,T. Santos,R. Budakian,P. Abbamonte###
(1557636, 1557636)
 We describe a strategy for using resonant soft x<missing VAR>-ray scattering (RSXS) tostudy the electronic structure of transition metal oxide quantum wires.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 5000, 'wires', 1],[102.0, 80, 'nm', 1],[186.0, 2, ',', 3]

C
###Resonant soft x-ray scattering from La(1-x)Sr(x)MnO(3) quantum wire arrays|X. M. Chen,E. M. Spanton,S. Wang,J. C. T. Lee,S. Smadici,X. Zhai,T. Naibert,J. N. Eckstein,A. Bhattacharya,T. Santos,R. Budakian,P. Abbamonte###
(1557700, 1557700)
 Usingelectron beam lithography and ion milling, we have produced periodic, patternedarrays of colossal magnetoresistance (CMR) phase La(1-x)Sr(x)MnO(3) consistingof  5000 wires, each of which is 80 nm in width.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 5000, 'wires', 0],[38.0, 80, 'nm', 0],[122.0, 2, ',', 2]

Sr
###Resonant soft x-ray scattering from La(1-x)Sr(x)MnO(3) quantum wire arrays|X. M. Chen,E. M. Spanton,S. Wang,J. C. T. Lee,S. Smadici,X. Zhai,T. Naibert,J. N. Eckstein,A. Bhattacharya,T. Santos,R. Budakian,P. Abbamonte###
(1557713, 1557713)
 Usingelectron beam lithography and ion milling, we have produced periodic, patternedarrays of colossal magnetoresistance (CMR) phase La(1-x)Sr(x)MnO(3) consistingof  5000 wires, each of which is 80 nm in width.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 5000, 'wires', 0],[25.0, 80, 'nm', 0],[109.0, 2, ',', 2]

S
###Resonant soft x-ray scattering from La(1-x)Sr(x)MnO(3) quantum wire arrays|X. M. Chen,E. M. Spanton,S. Wang,J. C. T. Lee,S. Smadici,X. Zhai,T. Naibert,J. N. Eckstein,A. Bhattacharya,T. Santos,R. Budakian,P. Abbamonte###
(1557810, 1557810)
 RSXS measurements at the Mn L<missing VAR>(2,3) edge, which has alarge magnetic cross section, show clear evidence for a magnetic superstructurewith a commensurate period of five wires, which we interpret as commensuratelymodulated antiferromagnetism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 5000, 'wires', 2],[72.0, 80, 'nm', 2],[12.0, 2, ',', 0]

Mn
###Resonant soft x-ray scattering from La(1-x)Sr(x)MnO(3) quantum wire arrays|X. M. Chen,E. M. Spanton,S. Wang,J. C. T. Lee,S. Smadici,X. Zhai,T. Naibert,J. N. Eckstein,A. Bhattacharya,T. Santos,R. Budakian,P. Abbamonte###
(1557818, 1557818)
 RSXS measurements at the Mn L<missing VAR>(2,3) edge, which has alarge magnetic cross section, show clear evidence for a magnetic superstructurewith a commensurate period of five wires, which we interpret as commensuratelymodulated antiferromagnetism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 5000, 'wires', 2],[80.0, 80, 'nm', 2],[4.0, 2, ',', 0]

S
###Resonant soft x-ray scattering from La(1-x)Sr(x)MnO(3) quantum wire arrays|X. M. Chen,E. M. Spanton,S. Wang,J. C. T. Lee,S. Smadici,X. Zhai,T. Naibert,J. N. Eckstein,A. Bhattacharya,T. Santos,R. Budakian,P. Abbamonte###
(1557994, 1557994)
 We introduce asimple, exactly soluble, analytic model of the scattering that captures,semi-quantitatively, the primary features in the RSXS data; this model will actas a foundation for forthcoming, detailed studies of the magnetic structure inthese systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[266.0, 5000, 'wires', 4],[256.0, 80, 'nm', 4],[172.0, 2, ',', 2]

In
###Time-dependent magneto-transport in a driven graphene spin valve|Kai-He Ding,Zhen-Gang Zhu,Jamal Berakdar###
(1558284, 1558284)
 In contrast, for a strong amplitudeof the alternating field the current is dominated by several resonant peaks, inparticular a marked peak appears at zero bias.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Local and Global Superconductivity in Bismuth|Luis A. Baring,Robson R. da Silva,Yakov Kopelevich###
(1558457, 1558457)
 We performed magnetization M<missing VAR>(H,T) and magnetoresistance R(T,H) measurementson powdered (grain size  149 micrometers) as well as highly orientedrhombohedral (A7) bismuth (Bi) samples consisting of single crystalline blocksof size  1x1 mm2 in the plane perpendicular to the trigonal c<missing VAR>-axis.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 149, 'micrometers', 0],[72.0, 1, 'x', 0],[138.0, 0.05, 'K', 1],[163.0, 0.1, 'K', 1],[355.0, 78, ',', 5]

H
###Local and Global Superconductivity in Bismuth|Luis A. Baring,Robson R. da Silva,Yakov Kopelevich###
(1558470, 1558470)
 We performed magnetization M<missing VAR>(H,T) and magnetoresistance R(T,H) measurementson powdered (grain size  149 micrometers) as well as highly orientedrhombohedral (A7) bismuth (Bi) samples consisting of single crystalline blocksof size  1x1 mm2 in the plane perpendicular to the trigonal c<missing VAR>-axis.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 149, 'micrometers', 0],[59.0, 1, 'x', 0],[125.0, 0.05, 'K', 1],[150.0, 0.1, 'K', 1],[342.0, 78, ',', 5]

(Bi)
###Local and Global Superconductivity in Bismuth|Luis A. Baring,Robson R. da Silva,Yakov Kopelevich###
(1558508, 1558510)
 We performed magnetization M<missing VAR>(H,T) and magnetoresistance R(T,H) measurementson powdered (grain size  149 micrometers) as well as highly orientedrhombohedral (A7) bismuth (Bi) samples consisting of single crystalline blocksof size  1x1 mm2 in the plane perpendicular to the trigonal c<missing VAR>-axis.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 149, 'micrometers', 0],[19.0, 1, 'x', 0],[85.0, 0.05, 'K', 1],[110.0, 0.1, 'K', 1],[302.0, 78, ',', 5]

Bi
###Local and Global Superconductivity in Bismuth|Luis A. Baring,Robson R. da Silva,Yakov Kopelevich###
(1558626, 1558626)
 Theobtained results revealed the occurrence of (1) local superconductivity inpowdered samples with Tc(0)  8.75 pm 0.05 K, and (2) global superconductivityat Tc(0)  7.3 pm 0.1 K in polycrystalline Bi triggered by low-resistanceOhmic contacts with silver (Ag) normal metal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 149, 'micrometers', 1],[97.0, 1, 'x', 1],[31.0, 0.05, 'K', 0],[6.0, 0.1, 'K', 0],[186.0, 78, ',', 4]

(Ag)
###Local and Global Superconductivity in Bismuth|Luis A. Baring,Robson R. da Silva,Yakov Kopelevich###
(1558645, 1558647)
 Theobtained results revealed the occurrence of (1) local superconductivity inpowdered samples with Tc(0)  8.75 pm 0.05 K, and (2) global superconductivityat Tc(0)  7.3 pm 0.1 K in polycrystalline Bi triggered by low-resistanceOhmic contacts with silver (Ag) normal metal.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 149, 'micrometers', 1],[116.0, 1, 'x', 1],[50.0, 0.05, 'K', 0],[25.0, 0.1, 'K', 0],[165.0, 78, ',', 4]

Bi
###Local and Global Superconductivity in Bismuth|Luis A. Baring,Robson R. da Silva,Yakov Kopelevich###
(1558671, 1558671)
 The results provide evidence thatthe superconductivity in Bi is localized in a tiny volume fraction, probably atintergrain or Ag/Bi interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, 149, 'micrometers', 2],[142.0, 1, 'x', 2],[76.0, 0.05, 'K', 1],[51.0, 0.1, 'K', 1],[141.0, 78, ',', 3]

Ag/Bi
###Local and Global Superconductivity in Bismuth|Luis A. Baring,Robson R. da Silva,Yakov Kopelevich###
(1558697, 1558699)
 The results provide evidence thatthe superconductivity in Bi is localized in a tiny volume fraction, probably atintergrain or Ag/Bi interfaces.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[212.0, 149, 'micrometers', 2],[168.0, 1, 'x', 2],[102.0, 0.05, 'K', 1],[77.0, 0.1, 'K', 1],[113.0, 78, ',', 3]

Bi
###Local and Global Superconductivity in Bismuth|Luis A. Baring,Robson R. da Silva,Yakov Kopelevich###
(1558730, 1558730)
 On the other hand, the occurrence of globalsuperconductivity observed for polycrystalline Bi can be accounted for byenhancement of the superconducting order parameter phase stiffness induced bythe normal metal contacts, the scenario proposed in the context of pseudogapregime in cuprates [E<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[245.0, 149, 'micrometers', 3],[201.0, 1, 'x', 3],[135.0, 0.05, 'K', 2],[110.0, 0.1, 'K', 2],[82.0, 78, ',', 2]

P
###Local and Global Superconductivity in Bismuth|Luis A. Baring,Robson R. da Silva,Yakov Kopelevich###
(1558808, 1558808)
, PR<missing VAR>B 78, 094509 (2008)].
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[323.0, 149, 'micrometers', 5],[279.0, 1, 'x', 5],[213.0, 0.05, 'K', 4],[188.0, 0.1, 'K', 4],[4.0, 78, ',', 0]

B
###Local and Global Superconductivity in Bismuth|Luis A. Baring,Robson R. da Silva,Yakov Kopelevich###
(1558810, 1558810)
, PR<missing VAR>B 78, 094509 (2008)].
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[325.0, 149, 'micrometers', 5],[281.0, 1, 'x', 5],[215.0, 0.05, 'K', 4],[190.0, 0.1, 'K', 4],[2.0, 78, ',', 0]

BaFe2As2
###Vortex glass line and vortex liquid resistivity in doped BaFe2As2 single crystals|S. R. Ghorbani,X. L. Wang,M. Shabazi,S. X. Dou,K. Y. Choi,C. T. Lin###
(1558849, 1558853)
Vortex glass line and vortex liquid resistivity in doped BaFe2As2 single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 31.7, ',', 1],[81.0, 17.3, ',', 1],[85.0, 18, 'K', 1],[140.0, 13, 'T', 2],[355.0, 2, ',', 6]

Ba0.72K0.28Fe2As2
###Vortex glass line and vortex liquid resistivity in doped BaFe2As2 single crystals|S. R. Ghorbani,X. L. Wang,M. Shabazi,S. X. Dou,K. Y. Choi,C. T. Lin###
(1558880, 1558887)
 The vortex liquid-to-glass transition has been studied in Ba0.72K0.28Fe2As2,Ba0.9Co0.1Fe2As2, and Ba(Fe0.45Ni0.05)2As2 single crystal with superconductingtransition temperature, Tc  31.7, 17.3, and 18 K, respectively, bymagnetoresistance measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.05600000000000001,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.144,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 31.7, ',', 0],[47.0, 17.3, ',', 0],[51.0, 18, 'K', 0],[106.0, 13, 'T', 1],[321.0, 2, ',', 5]

Ba0.9Co0.1Fe2As2
###Vortex glass line and vortex liquid resistivity in doped BaFe2As2 single crystals|S. R. Ghorbani,X. L. Wang,M. Shabazi,S. X. Dou,K. Y. Choi,C. T. Lin###
(1558891, 1558898)
 The vortex liquid-to-glass transition has been studied in Ba0.72K0.28Fe2As2,Ba0.9Co0.1Fe2As2, and Ba(Fe0.45Ni0.05)2As2 single crystal with superconductingtransition temperature, Tc  31.7, 17.3, and 18 K, respectively, bymagnetoresistance measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0.02,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 31.7, ',', 0],[36.0, 17.3, ',', 0],[40.0, 18, 'K', 0],[95.0, 13, 'T', 1],[310.0, 2, ',', 5]

Ba(Fe0.45Ni0.05)2As2
###Vortex glass line and vortex liquid resistivity in doped BaFe2As2 single crystals|S. R. Ghorbani,X. L. Wang,M. Shabazi,S. X. Dou,K. Y. Choi,C. T. Lin###
(1558903, 1558912)
 The vortex liquid-to-glass transition has been studied in Ba0.72K0.28Fe2As2,Ba0.9Co0.1Fe2As2, and Ba(Fe0.45Ni0.05)2As2 single crystal with superconductingtransition temperature, Tc  31.7, 17.3, and 18 K, respectively, bymagnetoresistance measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.225,0,0.025,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 31.7, ',', 0],[22.0, 17.3, ',', 0],[26.0, 18, 'K', 0],[81.0, 13, 'T', 1],[296.0, 2, ',', 5]

Tc
###Vortex glass line and vortex liquid resistivity in doped BaFe2As2 single crystals|S. R. Ghorbani,X. L. Wang,M. Shabazi,S. X. Dou,K. Y. Choi,C. T. Lin###
(1558928, 1558928)
 The vortex liquid-to-glass transition has been studied in Ba0.72K0.28Fe2As2,Ba0.9Co0.1Fe2As2, and Ba(Fe0.45Ni0.05)2As2 single crystal with superconductingtransition temperature, Tc  31.7, 17.3, and 18 K, respectively, bymagnetoresistance measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 31.7, ',', 0],[6.0, 17.3, ',', 0],[10.0, 18, 'K', 0],[65.0, 13, 'T', 1],[280.0, 2, ',', 5]

Tc
###Vortex glass line and vortex liquid resistivity in doped BaFe2As2 single crystals|S. R. Ghorbani,X. L. Wang,M. Shabazi,S. X. Dou,K. Y. Choi,C. T. Lin###
(1558958, 1558958)
 For temperatures below Tc, the resistivitycurves were measured in magnetic fields within the range of 0 leq B leq 13 T,and the pinning potential was scaled according to a modified model for vortexliquid resistivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 31.7, ',', 1],[24.0, 17.3, ',', 1],[20.0, 18, 'K', 1],[35.0, 13, 'T', 0],[250.0, 2, ',', 4]

B
###Vortex glass line and vortex liquid resistivity in doped BaFe2As2 single crystals|S. R. Ghorbani,X. L. Wang,M. Shabazi,S. X. Dou,K. Y. Choi,C. T. Lin###
(1558990, 1558990)
 For temperatures below Tc, the resistivitycurves were measured in magnetic fields within the range of 0 leq B leq 13 T,and the pinning potential was scaled according to a modified model for vortexliquid resistivity.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 31.7, ',', 1],[56.0, 17.3, ',', 1],[52.0, 18, 'K', 1],[3.0, 13, 'T', 0],[218.0, 2, ',', 4]

B
###Vortex glass line and vortex liquid resistivity in doped BaFe2As2 single crystals|S. R. Ghorbani,X. L. Wang,M. Shabazi,S. X. Dou,K. Y. Choi,C. T. Lin###
(1559041, 1559041)
 Good scaling of the resistivity rho(B, T) and theeffective pinning energy U0(B,T) was obtained with the critical exponents s<missing VAR> andB0.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 31.7, ',', 2],[107.0, 17.3, ',', 2],[103.0, 18, 'K', 2],[48.0, 13, 'T', 1],[167.0, 2, ',', 3]

U0
###Vortex glass line and vortex liquid resistivity in doped BaFe2As2 single crystals|S. R. Ghorbani,X. L. Wang,M. Shabazi,S. X. Dou,K. Y. Choi,C. T. Lin###
(1559058, 1559059)
 Good scaling of the resistivity rho(B, T) and theeffective pinning energy U0(B,T) was obtained with the critical exponents s<missing VAR> andB0.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 31.7, ',', 2],[124.0, 17.3, ',', 2],[120.0, 18, 'K', 2],[65.0, 13, 'T', 1],[149.0, 2, ',', 3]

B
###Vortex glass line and vortex liquid resistivity in doped BaFe2As2 single crystals|S. R. Ghorbani,X. L. Wang,M. Shabazi,S. X. Dou,K. Y. Choi,C. T. Lin###
(1559061, 1559061)
 Good scaling of the resistivity rho(B, T) and theeffective pinning energy U0(B,T) was obtained with the critical exponents s<missing VAR> andB0.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 31.7, ',', 2],[127.0, 17.3, ',', 2],[123.0, 18, 'K', 2],[68.0, 13, 'T', 1],[147.0, 2, ',', 3]

B0
###Vortex glass line and vortex liquid resistivity in doped BaFe2As2 single crystals|S. R. Ghorbani,X. L. Wang,M. Shabazi,S. X. Dou,K. Y. Choi,C. T. Lin###
(1559083, 1559084)
 Good scaling of the resistivity rho(B, T) and theeffective pinning energy U0(B,T) was obtained with the critical exponents s<missing VAR> andB0.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 31.7, ',', 2],[149.0, 17.3, ',', 2],[145.0, 18, 'K', 2],[90.0, 13, 'T', 1],[124.0, 2, ',', 3]

K
###Vortex glass line and vortex liquid resistivity in doped BaFe2As2 single crystals|S. R. Ghorbani,X. L. Wang,M. Shabazi,S. X. Dou,K. Y. Choi,C. T. Lin###
(1559184, 1559184)
 We found that non-magnetic K doping resultsin a high glass line close to the Hc2, while magnetic Ni and Co doping cause alow glass line which is far away from the Hc2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[253.0, 31.7, ',', 5],[250.0, 17.3, ',', 5],[246.0, 18, 'K', 5],[191.0, 13, 'T', 4],[24.0, 2, ',', 0]

Ni
###Vortex glass line and vortex liquid resistivity in doped BaFe2As2 single crystals|S. R. Ghorbani,X. L. Wang,M. Shabazi,S. X. Dou,K. Y. Choi,C. T. Lin###
(1559215, 1559215)
 We found that non-magnetic K doping resultsin a high glass line close to the Hc2, while magnetic Ni and Co doping cause alow glass line which is far away from the Hc2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[284.0, 31.7, ',', 5],[281.0, 17.3, ',', 5],[277.0, 18, 'K', 5],[222.0, 13, 'T', 4],[7.0, 2, ',', 0]

Co
###Vortex glass line and vortex liquid resistivity in doped BaFe2As2 single crystals|S. R. Ghorbani,X. L. Wang,M. Shabazi,S. X. Dou,K. Y. Choi,C. T. Lin###
(1559219, 1559219)
 We found that non-magnetic K doping resultsin a high glass line close to the Hc2, while magnetic Ni and Co doping cause alow glass line which is far away from the Hc2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[288.0, 31.7, ',', 5],[285.0, 17.3, ',', 5],[281.0, 18, 'K', 5],[226.0, 13, 'T', 4],[11.0, 2, ',', 0]

BaFe2As2
###Magnetic scattering and electron pair breaking by rare-earth-ion substitution in BaFe2As2 epitaxial films|Takayoshi Katase,Hidenori Hiramatsu,Toshio Kamiya,Hideo Hosono###
(1559361, 1559365)
Magnetic scattering and electron pair breaking by rare-earth-ion substitution in BaFe2As2 epitaxial films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[159.0, 22.4, 'K', 3],[168.0, 13.4, 'K', 3],[193.0, 6.2, 'K', 3],[202.0, 5.8, 'K', 3],[239.0, 2, 'K', 3],[262.0, 4, 'f', 4],[415.0, 4, 'f', 6],[435.0, 3, 'd', 6]

La
###Magnetic scattering and electron pair breaking by rare-earth-ion substitution in BaFe2As2 epitaxial films|Takayoshi Katase,Hidenori Hiramatsu,Toshio Kamiya,Hideo Hosono###
(1559402, 1559402)
 The effect of electron doping by trivalent charge state rare-earth ion (RE La, Ce, Pr, and Nd) substitutions on the superconductivity in BaFe2As2 wasexamined using epitaxial films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 22.4, 'K', 2],[131.0, 13.4, 'K', 2],[156.0, 6.2, 'K', 2],[165.0, 5.8, 'K', 2],[202.0, 2, 'K', 2],[225.0, 4, 'f', 3],[378.0, 4, 'f', 5],[398.0, 3, 'd', 5]

Ce
###Magnetic scattering and electron pair breaking by rare-earth-ion substitution in BaFe2As2 epitaxial films|Takayoshi Katase,Hidenori Hiramatsu,Toshio Kamiya,Hideo Hosono###
(1559405, 1559405)
 The effect of electron doping by trivalent charge state rare-earth ion (RE La, Ce, Pr, and Nd) substitutions on the superconductivity in BaFe2As2 wasexamined using epitaxial films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 22.4, 'K', 2],[128.0, 13.4, 'K', 2],[153.0, 6.2, 'K', 2],[162.0, 5.8, 'K', 2],[199.0, 2, 'K', 2],[222.0, 4, 'f', 3],[375.0, 4, 'f', 5],[395.0, 3, 'd', 5]

Pr
###Magnetic scattering and electron pair breaking by rare-earth-ion substitution in BaFe2As2 epitaxial films|Takayoshi Katase,Hidenori Hiramatsu,Toshio Kamiya,Hideo Hosono###
(1559408, 1559408)
 The effect of electron doping by trivalent charge state rare-earth ion (RE La, Ce, Pr, and Nd) substitutions on the superconductivity in BaFe2As2 wasexamined using epitaxial films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 22.4, 'K', 2],[125.0, 13.4, 'K', 2],[150.0, 6.2, 'K', 2],[159.0, 5.8, 'K', 2],[196.0, 2, 'K', 2],[219.0, 4, 'f', 3],[372.0, 4, 'f', 5],[392.0, 3, 'd', 5]

Nd
###Magnetic scattering and electron pair breaking by rare-earth-ion substitution in BaFe2As2 epitaxial films|Takayoshi Katase,Hidenori Hiramatsu,Toshio Kamiya,Hideo Hosono###
(1559413, 1559413)
 The effect of electron doping by trivalent charge state rare-earth ion (RE La, Ce, Pr, and Nd) substitutions on the superconductivity in BaFe2As2 wasexamined using epitaxial films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 22.4, 'K', 2],[120.0, 13.4, 'K', 2],[145.0, 6.2, 'K', 2],[154.0, 5.8, 'K', 2],[191.0, 2, 'K', 2],[214.0, 4, 'f', 3],[367.0, 4, 'f', 5],[387.0, 3, 'd', 5]

BaFe2As2
###Magnetic scattering and electron pair breaking by rare-earth-ion substitution in BaFe2As2 epitaxial films|Takayoshi Katase,Hidenori Hiramatsu,Toshio Kamiya,Hideo Hosono###
(1559426, 1559430)
 The effect of electron doping by trivalent charge state rare-earth ion (RE La, Ce, Pr, and Nd) substitutions on the superconductivity in BaFe2As2 wasexamined using epitaxial films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 22.4, 'K', 2],[103.0, 13.4, 'K', 2],[128.0, 6.2, 'K', 2],[137.0, 5.8, 'K', 2],[174.0, 2, 'K', 2],[197.0, 4, 'f', 3],[350.0, 4, 'f', 5],[370.0, 3, 'd', 5]

La
###Magnetic scattering and electron pair breaking by rare-earth-ion substitution in BaFe2As2 epitaxial films|Takayoshi Katase,Hidenori Hiramatsu,Toshio Kamiya,Hideo Hosono###
(1559528, 1559528)
 Bulksuperconductivity was observed at the maximum onset critical temperature(Tconset) of 22.4 K for La-doping and 13.4 K for Ce-doping, while only broadresistivity drops were observed at 6.2 K for Pr-doping and 5.8 K for Nd-dopingbut neither zero resistivity nor distinct Meissner effect were observed atleast down to 2 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 22.4, 'K', 0],[5.0, 13.4, 'K', 0],[30.0, 6.2, 'K', 0],[39.0, 5.8, 'K', 0],[76.0, 2, 'K', 0],[99.0, 4, 'f', 1],[252.0, 4, 'f', 3],[272.0, 3, 'd', 3]

Ce
###Magnetic scattering and electron pair breaking by rare-earth-ion substitution in BaFe2As2 epitaxial films|Takayoshi Katase,Hidenori Hiramatsu,Toshio Kamiya,Hideo Hosono###
(1559537, 1559537)
 Bulksuperconductivity was observed at the maximum onset critical temperature(Tconset) of 22.4 K for La-doping and 13.4 K for Ce-doping, while only broadresistivity drops were observed at 6.2 K for Pr-doping and 5.8 K for Nd-dopingbut neither zero resistivity nor distinct Meissner effect were observed atleast down to 2 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 22.4, 'K', 0],[4.0, 13.4, 'K', 0],[21.0, 6.2, 'K', 0],[30.0, 5.8, 'K', 0],[67.0, 2, 'K', 0],[90.0, 4, 'f', 1],[243.0, 4, 'f', 3],[263.0, 3, 'd', 3]

Pr
###Magnetic scattering and electron pair breaking by rare-earth-ion substitution in BaFe2As2 epitaxial films|Takayoshi Katase,Hidenori Hiramatsu,Toshio Kamiya,Hideo Hosono###
(1559562, 1559562)
 Bulksuperconductivity was observed at the maximum onset critical temperature(Tconset) of 22.4 K for La-doping and 13.4 K for Ce-doping, while only broadresistivity drops were observed at 6.2 K for Pr-doping and 5.8 K for Nd-dopingbut neither zero resistivity nor distinct Meissner effect were observed atleast down to 2 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 22.4, 'K', 0],[29.0, 13.4, 'K', 0],[4.0, 6.2, 'K', 0],[5.0, 5.8, 'K', 0],[42.0, 2, 'K', 0],[65.0, 4, 'f', 1],[218.0, 4, 'f', 3],[238.0, 3, 'd', 3]

Nd
###Magnetic scattering and electron pair breaking by rare-earth-ion substitution in BaFe2As2 epitaxial films|Takayoshi Katase,Hidenori Hiramatsu,Toshio Kamiya,Hideo Hosono###
(1559571, 1559571)
 Bulksuperconductivity was observed at the maximum onset critical temperature(Tconset) of 22.4 K for La-doping and 13.4 K for Ce-doping, while only broadresistivity drops were observed at 6.2 K for Pr-doping and 5.8 K for Nd-dopingbut neither zero resistivity nor distinct Meissner effect were observed atleast down to 2 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 22.4, 'K', 0],[38.0, 13.4, 'K', 0],[13.0, 6.2, 'K', 0],[4.0, 5.8, 'K', 0],[33.0, 2, 'K', 0],[56.0, 4, 'f', 1],[209.0, 4, 'f', 3],[229.0, 3, 'd', 3]

BaFe2As2
###Magnetic scattering and electron pair breaking by rare-earth-ion substitution in BaFe2As2 epitaxial films|Takayoshi Katase,Hidenori Hiramatsu,Toshio Kamiya,Hideo Hosono###
(1559663, 1559667)
 The decrease in Tconset with increasing the number of RE 4felectrons cannot be explained in terms of the crystalline qualities orcrystallographic structure parameters of the BaFe2As2 films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 22.4, 'K', 1],[130.0, 13.4, 'K', 1],[105.0, 6.2, 'K', 1],[96.0, 5.8, 'K', 1],[59.0, 2, 'K', 1],[36.0, 4, 'f', 0],[113.0, 4, 'f', 2],[133.0, 3, 'd', 2]

Ce
###Magnetic scattering and electron pair breaking by rare-earth-ion substitution in BaFe2As2 epitaxial films|Takayoshi Katase,Hidenori Hiramatsu,Toshio Kamiya,Hideo Hosono###
(1559737, 1559737)
 The negativemagnetoresistance was enhanced by the Ce- and Pr-doping, implying that thedecrease in Tc originates from magnetic pair breaking by interaction of thelocalized 4f orbitals in the RE dopants with the itinerant Fe 3d orbitals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[213.0, 22.4, 'K', 3],[204.0, 13.4, 'K', 3],[179.0, 6.2, 'K', 3],[170.0, 5.8, 'K', 3],[133.0, 2, 'K', 3],[110.0, 4, 'f', 2],[43.0, 4, 'f', 0],[63.0, 3, 'd', 0]

Pr
###Magnetic scattering and electron pair breaking by rare-earth-ion substitution in BaFe2As2 epitaxial films|Takayoshi Katase,Hidenori Hiramatsu,Toshio Kamiya,Hideo Hosono###
(1559742, 1559742)
 The negativemagnetoresistance was enhanced by the Ce- and Pr-doping, implying that thedecrease in Tc originates from magnetic pair breaking by interaction of thelocalized 4f orbitals in the RE dopants with the itinerant Fe 3d orbitals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[218.0, 22.4, 'K', 3],[209.0, 13.4, 'K', 3],[184.0, 6.2, 'K', 3],[175.0, 5.8, 'K', 3],[138.0, 2, 'K', 3],[115.0, 4, 'f', 2],[38.0, 4, 'f', 0],[58.0, 3, 'd', 0]

Tc
###Magnetic scattering and electron pair breaking by rare-earth-ion substitution in BaFe2As2 epitaxial films|Takayoshi Katase,Hidenori Hiramatsu,Toshio Kamiya,Hideo Hosono###
(1559758, 1559758)
 The negativemagnetoresistance was enhanced by the Ce- and Pr-doping, implying that thedecrease in Tc originates from magnetic pair breaking by interaction of thelocalized 4f orbitals in the RE dopants with the itinerant Fe 3d orbitals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[234.0, 22.4, 'K', 3],[225.0, 13.4, 'K', 3],[200.0, 6.2, 'K', 3],[191.0, 5.8, 'K', 3],[154.0, 2, 'K', 3],[131.0, 4, 'f', 2],[22.0, 4, 'f', 0],[42.0, 3, 'd', 0]

Fe
###Magnetic scattering and electron pair breaking by rare-earth-ion substitution in BaFe2As2 epitaxial films|Takayoshi Katase,Hidenori Hiramatsu,Toshio Kamiya,Hideo Hosono###
(1559799, 1559799)
 The negativemagnetoresistance was enhanced by the Ce- and Pr-doping, implying that thedecrease in Tc originates from magnetic pair breaking by interaction of thelocalized 4f orbitals in the RE dopants with the itinerant Fe 3d orbitals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[275.0, 22.4, 'K', 3],[266.0, 13.4, 'K', 3],[241.0, 6.2, 'K', 3],[232.0, 5.8, 'K', 3],[195.0, 2, 'K', 3],[172.0, 4, 'f', 2],[19.0, 4, 'f', 0],[1.0, 3, 'd', 0]

Co
###First-principles study of Co concentration and interfacial resonance states in Fe$_{1-x}$Co$_x$ magnetic tunnel junctions|Jonathan Trinastic,Yan Wang,Hai-Ping Cheng###
(1559821, 1559821)
First-principles study of Co concentration and interfacial resonance states in Fe1-xCox<missing VAR> magnetic tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, -20, '%', 3],[313.0, 10, 'x', 6]

Fe1-xCo
###First-principles study of Co concentration and interfacial resonance states in Fe$_{1-x}$Co$_x$ magnetic tunnel junctions|Jonathan Trinastic,Yan Wang,Hai-Ping Cheng###
(1559835, 1559839)
First-principles study of Co concentration and interfacial resonance states in Fe1-xCox<missing VAR> magnetic tunnel junctions.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[139.0, -20, '%', 3],[295.0, 10, 'x', 6]

Co
###First-principles study of Co concentration and interfacial resonance states in Fe$_{1-x}$Co$_x$ magnetic tunnel junctions|Jonathan Trinastic,Yan Wang,Hai-Ping Cheng###
(1559853, 1559853)
 The optimal Co concentration in Fe1-xCox<missing VAR>/MgO magnetic tunneljunctions (MTJs) that maximizes tunneling magnetoresistance (TMR) is stillunder investigation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, -20, '%', 2],[281.0, 10, 'x', 5]

Fe1-xCo
###First-principles study of Co concentration and interfacial resonance states in Fe$_{1-x}$Co$_x$ magnetic tunnel junctions|Jonathan Trinastic,Yan Wang,Hai-Ping Cheng###
(1559859, 1559863)
 The optimal Co concentration in Fe1-xCox<missing VAR>/MgO magnetic tunneljunctions (MTJs) that maximizes tunneling magnetoresistance (TMR) is stillunder investigation.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[115.0, -20, '%', 2],[271.0, 10, 'x', 5]

MgO
###First-principles study of Co concentration and interfacial resonance states in Fe$_{1-x}$Co$_x$ magnetic tunnel junctions|Jonathan Trinastic,Yan Wang,Hai-Ping Cheng###
(1559866, 1559867)
 The optimal Co concentration in Fe1-xCox<missing VAR>/MgO magnetic tunneljunctions (MTJs) that maximizes tunneling magnetoresistance (TMR) is stillunder investigation.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, -20, '%', 2],[267.0, 10, 'x', 5]

VC
###First-principles study of Co concentration and interfacial resonance states in Fe$_{1-x}$Co$_x$ magnetic tunnel junctions|Jonathan Trinastic,Yan Wang,Hai-Ping Cheng###
(1559947, 1559948)
 We perform a first-principles transport study on MTJsusing disordered electrodes modeled using the virtual crystal approximation(VCA) and ordered alloys with various MgO barrier thicknesses.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, -20, '%', 1],[186.0, 10, 'x', 4]

MgO
###First-principles study of Co concentration and interfacial resonance states in Fe$_{1-x}$Co$_x$ magnetic tunnel junctions|Jonathan Trinastic,Yan Wang,Hai-Ping Cheng###
(1559962, 1559963)
 We perform a first-principles transport study on MTJsusing disordered electrodes modeled using the virtual crystal approximation(VCA) and ordered alloys with various MgO barrier thicknesses.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, -20, '%', 1],[171.0, 10, 'x', 4]

Co
###First-principles study of Co concentration and interfacial resonance states in Fe$_{1-x}$Co$_x$ magnetic tunnel junctions|Jonathan Trinastic,Yan Wang,Hai-Ping Cheng###
(1559982, 1559982)
 We find that10-20% Co concentration maximizes TMR using VCA to represent disorder in theelectrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, -20, '%', 0],[152.0, 10, 'x', 3]

VC
###First-principles study of Co concentration and interfacial resonance states in Fe$_{1-x}$Co$_x$ magnetic tunnel junctions|Jonathan Trinastic,Yan Wang,Hai-Ping Cheng###
(1559994, 1559995)
 We find that10-20% Co concentration maximizes TMR using VCA to represent disorder in theelectrodes.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, -20, '%', 0],[139.0, 10, 'x', 3]

I
###First-principles study of Co concentration and interfacial resonance states in Fe$_{1-x}$Co$_x$ magnetic tunnel junctions|Jonathan Trinastic,Yan Wang,Hai-Ping Cheng###
(1560042, 1560042)
 This TMR peak arises due to a minority d<missing VAR>-type interfacial resonancestate (IR<missing VAR>S) that becomes filled with small Co doping, leading to a decrease inantiparallel conductance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, -20, '%', 1],[92.0, 10, 'x', 2]

S
###First-principles study of Co concentration and interfacial resonance states in Fe$_{1-x}$Co$_x$ magnetic tunnel junctions|Jonathan Trinastic,Yan Wang,Hai-Ping Cheng###
(1560044, 1560044)
 This TMR peak arises due to a minority d<missing VAR>-type interfacial resonancestate (IR<missing VAR>S) that becomes filled with small Co doping, leading to a decrease inantiparallel conductance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, -20, '%', 1],[90.0, 10, 'x', 2]

Co
###First-principles study of Co concentration and interfacial resonance states in Fe$_{1-x}$Co$_x$ magnetic tunnel junctions|Jonathan Trinastic,Yan Wang,Hai-Ping Cheng###
(1560057, 1560057)
 This TMR peak arises due to a minority d<missing VAR>-type interfacial resonancestate (IR<missing VAR>S) that becomes filled with small Co doping, leading to a decrease inantiparallel conductance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, -20, '%', 1],[77.0, 10, 'x', 2]

Fe1-xCo
###First-principles study of Co concentration and interfacial resonance states in Fe$_{1-x}$Co$_x$ magnetic tunnel junctions|Jonathan Trinastic,Yan Wang,Hai-Ping Cheng###
(1560084, 1560088)
 Calculations with ordered Fe1-xCox<missing VAR>electrodes confirm the filling of this minority d<missing VAR>-type IR<missing VAR>S for small Coconcentrations.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[106.0, -20, '%', 2],[46.0, 10, 'x', 1]

I
###First-principles study of Co concentration and interfacial resonance states in Fe$_{1-x}$Co$_x$ magnetic tunnel junctions|Jonathan Trinastic,Yan Wang,Hai-Ping Cheng###
(1560110, 1560110)
 Calculations with ordered Fe1-xCox<missing VAR>electrodes confirm the filling of this minority d<missing VAR>-type IR<missing VAR>S for small Coconcentrations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, -20, '%', 2],[24.0, 10, 'x', 1]

S
###First-principles study of Co concentration and interfacial resonance states in Fe$_{1-x}$Co$_x$ magnetic tunnel junctions|Jonathan Trinastic,Yan Wang,Hai-Ping Cheng###
(1560112, 1560112)
 Calculations with ordered Fe1-xCox<missing VAR>electrodes confirm the filling of this minority d<missing VAR>-type IR<missing VAR>S for small Coconcentrations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, -20, '%', 2],[22.0, 10, 'x', 1]

Co
###First-principles study of Co concentration and interfacial resonance states in Fe$_{1-x}$Co$_x$ magnetic tunnel junctions|Jonathan Trinastic,Yan Wang,Hai-Ping Cheng###
(1560118, 1560118)
 Calculations with ordered Fe1-xCox<missing VAR>electrodes confirm the filling of this minority d<missing VAR>-type IR<missing VAR>S for small Coconcentrations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, -20, '%', 2],[16.0, 10, 'x', 1]

In
###First-principles study of Co concentration and interfacial resonance states in Fe$_{1-x}$Co$_x$ magnetic tunnel junctions|Jonathan Trinastic,Yan Wang,Hai-Ping Cheng###
(1560124, 1560124)
 In addition, we construct a 10x10 supercell without VCA toexplicitly represent disorder at the Fe1-xCox<missing VAR>/MgO interface, whichdemonstrates a quenching of the minority-d<missing VAR> IR<missing VAR>S and significant reduction inavailable states at the Fermi level that agrees with VCA calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, -20, '%', 3],[10.0, 10, 'x', 0]

VC
###First-principles study of Co concentration and interfacial resonance states in Fe$_{1-x}$Co$_x$ magnetic tunnel junctions|Jonathan Trinastic,Yan Wang,Hai-Ping Cheng###
(1560141, 1560142)
 In addition, we construct a 10x10 supercell without VCA toexplicitly represent disorder at the Fe1-xCox<missing VAR>/MgO interface, whichdemonstrates a quenching of the minority-d<missing VAR> IR<missing VAR>S and significant reduction inavailable states at the Fermi level that agrees with VCA calculations.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, -20, '%', 3],[7.0, 10, 'x', 0]

Fe1-xCo
###First-principles study of Co concentration and interfacial resonance states in Fe$_{1-x}$Co$_x$ magnetic tunnel junctions|Jonathan Trinastic,Yan Wang,Hai-Ping Cheng###
(1560158, 1560162)
 In addition, we construct a 10x10 supercell without VCA toexplicitly represent disorder at the Fe1-xCox<missing VAR>/MgO interface, whichdemonstrates a quenching of the minority-d<missing VAR> IR<missing VAR>S and significant reduction inavailable states at the Fermi level that agrees with VCA calculations.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[180.0, -20, '%', 3],[24.0, 10, 'x', 0]

MgO
###First-principles study of Co concentration and interfacial resonance states in Fe$_{1-x}$Co$_x$ magnetic tunnel junctions|Jonathan Trinastic,Yan Wang,Hai-Ping Cheng###
(1560165, 1560166)
 In addition, we construct a 10x10 supercell without VCA toexplicitly represent disorder at the Fe1-xCox<missing VAR>/MgO interface, whichdemonstrates a quenching of the minority-d<missing VAR> IR<missing VAR>S and significant reduction inavailable states at the Fermi level that agrees with VCA calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[187.0, -20, '%', 3],[31.0, 10, 'x', 0]

I
###First-principles study of Co concentration and interfacial resonance states in Fe$_{1-x}$Co$_x$ magnetic tunnel junctions|Jonathan Trinastic,Yan Wang,Hai-Ping Cheng###
(1560188, 1560188)
 In addition, we construct a 10x10 supercell without VCA toexplicitly represent disorder at the Fe1-xCox<missing VAR>/MgO interface, whichdemonstrates a quenching of the minority-d<missing VAR> IR<missing VAR>S and significant reduction inavailable states at the Fermi level that agrees with VCA calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[210.0, -20, '%', 3],[54.0, 10, 'x', 0]

S
###First-principles study of Co concentration and interfacial resonance states in Fe$_{1-x}$Co$_x$ magnetic tunnel junctions|Jonathan Trinastic,Yan Wang,Hai-Ping Cheng###
(1560190, 1560190)
 In addition, we construct a 10x10 supercell without VCA toexplicitly represent disorder at the Fe1-xCox<missing VAR>/MgO interface, whichdemonstrates a quenching of the minority-d<missing VAR> IR<missing VAR>S and significant reduction inavailable states at the Fermi level that agrees with VCA calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[212.0, -20, '%', 3],[56.0, 10, 'x', 0]

VC
###First-principles study of Co concentration and interfacial resonance states in Fe$_{1-x}$Co$_x$ magnetic tunnel junctions|Jonathan Trinastic,Yan Wang,Hai-Ping Cheng###
(1560219, 1560220)
 In addition, we construct a 10x10 supercell without VCA toexplicitly represent disorder at the Fe1-xCox<missing VAR>/MgO interface, whichdemonstrates a quenching of the minority-d<missing VAR> IR<missing VAR>S and significant reduction inavailable states at the Fermi level that agrees with VCA calculations.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[241.0, -20, '%', 3],[85.0, 10, 'x', 0]

I
###First-principles study of Co concentration and interfacial resonance states in Fe$_{1-x}$Co$_x$ magnetic tunnel junctions|Jonathan Trinastic,Yan Wang,Hai-Ping Cheng###
(1560254, 1560254)
 Theseresults explain recent experimental findings and provide implications for theimpact of IR<missing VAR>S on conductance and TMR in Fe1-xCox<missing VAR>/MgO tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[276.0, -20, '%', 4],[120.0, 10, 'x', 1]

S
###First-principles study of Co concentration and interfacial resonance states in Fe$_{1-x}$Co$_x$ magnetic tunnel junctions|Jonathan Trinastic,Yan Wang,Hai-Ping Cheng###
(1560256, 1560256)
 Theseresults explain recent experimental findings and provide implications for theimpact of IR<missing VAR>S on conductance and TMR in Fe1-xCox<missing VAR>/MgO tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[278.0, -20, '%', 4],[122.0, 10, 'x', 1]

Fe1-xCo
###First-principles study of Co concentration and interfacial resonance states in Fe$_{1-x}$Co$_x$ magnetic tunnel junctions|Jonathan Trinastic,Yan Wang,Hai-Ping Cheng###
(1560270, 1560274)
 Theseresults explain recent experimental findings and provide implications for theimpact of IR<missing VAR>S on conductance and TMR in Fe1-xCox<missing VAR>/MgO tunnel junctions.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[292.0, -20, '%', 4],[136.0, 10, 'x', 1]

MgO
###First-principles study of Co concentration and interfacial resonance states in Fe$_{1-x}$Co$_x$ magnetic tunnel junctions|Jonathan Trinastic,Yan Wang,Hai-Ping Cheng###
(1560277, 1560278)
 Theseresults explain recent experimental findings and provide implications for theimpact of IR<missing VAR>S on conductance and TMR in Fe1-xCox<missing VAR>/MgO tunnel junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[299.0, -20, '%', 4],[143.0, 10, 'x', 1]

In
###Vortex-induced negative magnetoresistance and peak effect in narrow superconducting films|D. Y. Vodolazov###
(1560316, 1560316)
 In framework of Ginzburg-Landau model it is shown that narrow superconductingfilm with width w<missing VAR>  3-8 xi(T) (xi(T) is a temperature dependent coherencelength) exhibits unusual transport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Vortex-induced negative magnetoresistance and peak effect in narrow superconducting films|D. Y. Vodolazov###
(1560388, 1560388)
 In the absence of bulk pinningits critical current Ic nonmonotonically depends on perpendicular magneticfield H and has one minima (dip) and one maxima (peak) at some magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Vortex-induced negative magnetoresistance and peak effect in narrow superconducting films|D. Y. Vodolazov###
(1560422, 1560422)
 In the absence of bulk pinningits critical current Ic nonmonotonically depends on perpendicular magneticfield H and has one minima (dip) and one maxima (peak) at some magnetic fields.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Vortex-induced negative magnetoresistance and peak effect in narrow superconducting films|D. Y. Vodolazov###
(1560456, 1560456)
At currents I << Ic(H) the finite magnetoresistance R<missing VAR>(H) of such a samples dueto thermo-activated vortex hopping via edge barriers also shows both localmaxima(peak) and minima(dip) nearly at the same magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Vortex-induced negative magnetoresistance and peak effect in narrow superconducting films|D. Y. Vodolazov###
(1560460, 1560460)
At currents I << Ic(H) the finite magnetoresistance R<missing VAR>(H) of such a samples dueto thermo-activated vortex hopping via edge barriers also shows both localmaxima(peak) and minima(dip) nearly at the same magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(H)
###Vortex-induced negative magnetoresistance and peak effect in narrow superconducting films|D. Y. Vodolazov###
(1560466, 1560468)
At currents I << Ic(H) the finite magnetoresistance R<missing VAR>(H) of such a samples dueto thermo-activated vortex hopping via edge barriers also shows both localmaxima(peak) and minima(dip) nearly at the same magnetic fields.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(H)
###Vortex-induced negative magnetoresistance and peak effect in narrow superconducting films|D. Y. Vodolazov###
(1560477, 1560479)
At currents I << Ic(H) the finite magnetoresistance R<missing VAR>(H) of such a samples dueto thermo-activated vortex hopping via edge barriers also shows both localmaxima(peak) and minima(dip) nearly at the same magnetic fields.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Vortex-induced negative magnetoresistance and peak effect in narrow superconducting films|D. Y. Vodolazov###
(1560542, 1560542)
 In narrowerfilms such an effect is absent due to absence of the vortices and in widerfilms the effect is weaker due to increased vortex-vortex interaction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(H)
###Vortex-induced negative magnetoresistance and peak effect in narrow superconducting films|D. Y. Vodolazov###
(1560625, 1560627)
 Finitelength of the film produces additional periodic variation in both Ic(H) andR<missing VAR>(H) because of discrete change in the number of the vortices, which issuperimposed on the above mentioned nonmonotonic dependence.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(H)
###Vortex-induced negative magnetoresistance and peak effect in narrow superconducting films|D. Y. Vodolazov###
(1560633, 1560635)
 Finitelength of the film produces additional periodic variation in both Ic(H) andR<missing VAR>(H) because of discrete change in the number of the vortices, which issuperimposed on the above mentioned nonmonotonic dependence.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(H)
###Vortex-induced negative magnetoresistance and peak effect in narrow superconducting films|D. Y. Vodolazov###
(1560719, 1560721)
 The obtainedresults are directly related to many experiments on narrow superconductingfilms/bridges where such a nonmonotonic dependencies Ic(H) and R<missing VAR>(H) wereobserved.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(H)
###Vortex-induced negative magnetoresistance and peak effect in narrow superconducting films|D. Y. Vodolazov###
(1560726, 1560728)
 The obtainedresults are directly related to many experiments on narrow superconductingfilms/bridges where such a nonmonotonic dependencies Ic(H) and R<missing VAR>(H) wereobserved.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Quantitative magnetic imaging at the nanometer scale by ballistic electron magnetic microscopy|Marie Hervé,Sylvain Tricot,Sophie Guézo,Gabriel Delhaye,Bruno Lépine,Philippe Schieffer,Pascal Turban###
(1560784, 1560784)
 We demonstrate quantitative ballistic electron magnetic microscopy (BEMM)imaging of simple model Fe(001) nanostructures.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/Au/Fe
###Quantitative magnetic imaging at the nanometer scale by ballistic electron magnetic microscopy|Marie Hervé,Sylvain Tricot,Sophie Guézo,Gabriel Delhaye,Bruno Lépine,Philippe Schieffer,Pascal Turban###
(1560858, 1560862)
 We use in situ nanostencilshadow mask resistless patterning combined with molecular beam epitaxydeposition to prepare under ultra-high vacuum conditions nanostructuredepitaxial Fe/Au/Fe/GaAs(001) spin-valves.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

In
###Quantitative magnetic imaging at the nanometer scale by ballistic electron magnetic microscopy|Marie Hervé,Sylvain Tricot,Sophie Guézo,Gabriel Delhaye,Bruno Lépine,Philippe Schieffer,Pascal Turban###
(1560875, 1560875)
 In this epitaxial system, themagnetization of the bottom Fe/GaAs(001) electrode is parallel to the [110]direction, defining accurately the analysis direction for the BEMM experiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Quantitative magnetic imaging at the nanometer scale by ballistic electron magnetic microscopy|Marie Hervé,Sylvain Tricot,Sophie Guézo,Gabriel Delhaye,Bruno Lépine,Philippe Schieffer,Pascal Turban###
(1560935, 1560935)
 In this epitaxial system, themagnetization of the bottom Fe/GaAs(001) electrode is parallel to the [110]direction, defining accurately the analysis direction for the BEMM experiments.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/Au/Fe
###Quantitative magnetic imaging at the nanometer scale by ballistic electron magnetic microscopy|Marie Hervé,Sylvain Tricot,Sophie Guézo,Gabriel Delhaye,Bruno Lépine,Philippe Schieffer,Pascal Turban###
(1560958, 1560962)
The large hot-electron magnetoresistance of the Fe/Au/Fe/GaAs(001) epitaxialspin-valve allows us to image various stable magnetic configurations on theas-grown Fe(001) microstructures with a high sensitivity, even for smallmisalignments of both magnetic electrodes.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

B
###Quantitative magnetic imaging at the nanometer scale by ballistic electron magnetic microscopy|Marie Hervé,Sylvain Tricot,Sophie Guézo,Gabriel Delhaye,Bruno Lépine,Philippe Schieffer,Pascal Turban###
(1561078, 1561078)
 The angular dependence of thehot-electron magnetocurrent is used to convert magnetization maps calculated bymicromagnetic simulations into simulated BEMM images.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Quantitative magnetic imaging at the nanometer scale by ballistic electron magnetic microscopy|Marie Hervé,Sylvain Tricot,Sophie Guézo,Gabriel Delhaye,Bruno Lépine,Philippe Schieffer,Pascal Turban###
(1561090, 1561090)
 The calculated BEMMimages and magnetization rotation profiles show quantitative agreement withexperiments and allow us to investigate the magnetic phase diagram of thesemodel Fe(001) microstructures.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Quantitative magnetic imaging at the nanometer scale by ballistic electron magnetic microscopy|Marie Hervé,Sylvain Tricot,Sophie Guézo,Gabriel Delhaye,Bruno Lépine,Philippe Schieffer,Pascal Turban###
(1561187, 1561187)
 This opens the way for further BEMMinvestigations of current-induced magnetization dynamics.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Resistance asymmetry of a two-dimensional electron gas caused by an effective spin injection|D. I. Golosov,I. Shlimak,A. Butenko,K. -J. Friedland,S. V. Kravchenko###
(1561257, 1561257)
 We have performed conductivity measurements on a Si-M<missing VAR>OSFET sample with a slotin the upper gate, allowing for different electron densities n<missing VAR>1 and n<missing VAR>2 acrossthe slot.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OSF
###Resistance asymmetry of a two-dimensional electron gas caused by an effective spin injection|D. I. Golosov,I. Shlimak,A. Butenko,K. -J. Friedland,S. V. Kravchenko###
(1561260, 1561262)
 We have performed conductivity measurements on a Si-M<missing VAR>OSFET sample with a slotin the upper gate, allowing for different electron densities n<missing VAR>1 and n<missing VAR>2 acrossthe slot.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Resistance asymmetry of a two-dimensional electron gas caused by an effective spin injection|D. I. Golosov,I. Shlimak,A. Butenko,K. -J. Friedland,S. V. Kravchenko###
(1561343, 1561343)
 Dynamic longitudinal resistance was measured by a standard lock-intechnique, while maintaining a large D<missing VAR>C current through the source-drainchannel.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Resistance asymmetry of a two-dimensional electron gas caused by an effective spin injection|D. I. Golosov,I. Shlimak,A. Butenko,K. -J. Friedland,S. V. Kravchenko###
(1561390, 1561390)
 We find that in a parallel magnetic field, the resistance of thesample, R<missing VAR>(ID<missing VAR>C), is asymmetric with respect to the direction of the D<missing VAR>C current.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Resistance asymmetry of a two-dimensional electron gas caused by an effective spin injection|D. I. Golosov,I. Shlimak,A. Butenko,K. -J. Friedland,S. V. Kravchenko###
(1561392, 1561392)
 We find that in a parallel magnetic field, the resistance of thesample, R<missing VAR>(ID<missing VAR>C), is asymmetric with respect to the direction of the D<missing VAR>C current.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Resistance asymmetry of a two-dimensional electron gas caused by an effective spin injection|D. I. Golosov,I. Shlimak,A. Butenko,K. -J. Friedland,S. V. Kravchenko###
(1561415, 1561415)
 We find that in a parallel magnetic field, the resistance of thesample, R<missing VAR>(ID<missing VAR>C), is asymmetric with respect to the direction of the D<missing VAR>C current.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Resistance asymmetry of a two-dimensional electron gas caused by an effective spin injection|D. I. Golosov,I. Shlimak,A. Butenko,K. -J. Friedland,S. V. Kravchenko###
(1561697, 1561697)
 We further observe thatthe value of R<missing VAR>(ID<missing VAR>C) saturates at large ID<missing VAR>C; we suggest that this is due toelectron tunnelling from the two-dimensional n<missing VAR>-type layer into the p<missing VAR>-typesilicon (or into another spin reservoir) at the slot.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Resistance asymmetry of a two-dimensional electron gas caused by an effective spin injection|D. I. Golosov,I. Shlimak,A. Butenko,K. -J. Friedland,S. V. Kravchenko###
(1561699, 1561699)
 We further observe thatthe value of R<missing VAR>(ID<missing VAR>C) saturates at large ID<missing VAR>C; we suggest that this is due toelectron tunnelling from the two-dimensional n<missing VAR>-type layer into the p<missing VAR>-typesilicon (or into another spin reservoir) at the slot.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Resistance asymmetry of a two-dimensional electron gas caused by an effective spin injection|D. I. Golosov,I. Shlimak,A. Butenko,K. -J. Friedland,S. V. Kravchenko###
(1561708, 1561708)
 We further observe thatthe value of R<missing VAR>(ID<missing VAR>C) saturates at large ID<missing VAR>C; we suggest that this is due toelectron tunnelling from the two-dimensional n<missing VAR>-type layer into the p<missing VAR>-typesilicon (or into another spin reservoir) at the slot.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Resistance asymmetry of a two-dimensional electron gas caused by an effective spin injection|D. I. Golosov,I. Shlimak,A. Butenko,K. -J. Friedland,S. V. Kravchenko###
(1561710, 1561710)
 We further observe thatthe value of R<missing VAR>(ID<missing VAR>C) saturates at large ID<missing VAR>C; we suggest that this is due toelectron tunnelling from the two-dimensional n<missing VAR>-type layer into the p<missing VAR>-typesilicon (or into another spin reservoir) at the slot.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe1-xCo
###Strain-induced effects on the magnetic and electronic properties of epitaxial Fe$_{1-x}$Co$_{x}$Si thin films|P. Sinha,N. A. Porter,C. H. Marrows###
(1561806, 1561810)
Strain-induced effects on the magnetic and electronic properties of epitaxial Fe1-xCox<missing VAR>Si thin films.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[358.0, 77, 'K', 6]

Si
###Strain-induced effects on the magnetic and electronic properties of epitaxial Fe$_{1-x}$Co$_{x}$Si thin films|P. Sinha,N. A. Porter,C. H. Marrows###
(1561812, 1561812)
Strain-induced effects on the magnetic and electronic properties of epitaxial Fe1-xCox<missing VAR>Si thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[356.0, 77, 'K', 6]

Co
###Strain-induced effects on the magnetic and electronic properties of epitaxial Fe$_{1-x}$Co$_{x}$Si thin films|P. Sinha,N. A. Porter,C. H. Marrows###
(1561827, 1561827)
 We have investigated the Co-doping dependence of the structural, transport,and magnetic properties of epsilon-FeCoSi epilayers grown by molecular beamepitaxy on silicon (111) substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[341.0, 77, 'K', 5]

FeCoSi
###Strain-induced effects on the magnetic and electronic properties of epitaxial Fe$_{1-x}$Co$_{x}$Si thin films|P. Sinha,N. A. Porter,C. H. Marrows###
(1561854, 1561856)
 We have investigated the Co-doping dependence of the structural, transport,and magnetic properties of epsilon-FeCoSi epilayers grown by molecular beamepitaxy on silicon (111) substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[312.0, 77, 'K', 5]

FeCoSi
###Strain-induced effects on the magnetic and electronic properties of epitaxial Fe$_{1-x}$Co$_{x}$Si thin films|P. Sinha,N. A. Porter,C. H. Marrows###
(1561943, 1561945)
 Low energy electron diffraction, atomicforce microscopy, X<missing VAR>-ray diffraction, and high resolution transmission electronmicroscopy studies have confirmed the growth of phase-pure, defect-freeepsilon-FeCoSi epitaxial films with a surface roughness of 1 nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[223.0, 77, 'K', 4]

B20
###Strain-induced effects on the magnetic and electronic properties of epitaxial Fe$_{1-x}$Co$_{x}$Si thin films|P. Sinha,N. A. Porter,C. H. Marrows###
(1561997, 1561998)
 Theseepilayers are strained due to lattice mismatch with the substrate, deformingthe cubic B20 lattice so that it becomes rhombohedral.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[170.0, 77, 'K', 3]

Co
###Strain-induced effects on the magnetic and electronic properties of epitaxial Fe$_{1-x}$Co$_{x}$Si thin films|P. Sinha,N. A. Porter,C. H. Marrows###
(1562032, 1562032)
 The temperaturedependence of the resistivity changes as the Co concentration is increased,being semiconducting-like for low x<missing VAR> and metallic-like for x<missing VAR> gtrsim 0.3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 77, 'K', 2]

FeCoSi
###Strain-induced effects on the magnetic and electronic properties of epitaxial Fe$_{1-x}$Co$_{x}$Si thin films|P. Sinha,N. A. Porter,C. H. Marrows###
(1562095, 1562097)
 Thefilms exhibit the positive linear magnetoresistance that is characteristic ofepsilon-FeCoSi below their magnetic ordering temperatures T<missing VAR>mathrmord, aswell as the huge anomalous Hall effect of order several muOmega cm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 77, 'K', 1]

Co
###Strain-induced effects on the magnetic and electronic properties of epitaxial Fe$_{1-x}$Co$_{x}$Si thin films|P. Sinha,N. A. Porter,C. H. Marrows###
(1562203, 1562203)
 The saturation magnetic moment of the films varies as a function of Codoping, with a contribution of 1 muB/ Co atom for x<missing VAR> lesssim 0.25.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 77, 'K', 1]

B
###Strain-induced effects on the magnetic and electronic properties of epitaxial Fe$_{1-x}$Co$_{x}$Si thin films|P. Sinha,N. A. Porter,C. H. Marrows###
(1562220, 1562220)
 The saturation magnetic moment of the films varies as a function of Codoping, with a contribution of 1 muB/ Co atom for x<missing VAR> lesssim 0.25.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 77, 'K', 1]

Co
###Strain-induced effects on the magnetic and electronic properties of epitaxial Fe$_{1-x}$Co$_{x}$Si thin films|P. Sinha,N. A. Porter,C. H. Marrows###
(1562223, 1562223)
 The saturation magnetic moment of the films varies as a function of Codoping, with a contribution of 1 muB/ Co atom for x<missing VAR> lesssim 0.25.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 77, 'K', 1]

WTe2
###Signature of strong spin-orbital coupling in the large non-saturating magnetoresistance material WTe2|J. Jiang,F. Tang,X. C. Pan,H. M. Liu,X. H. Niu,Y. X. Wang,D. F. Xu,H. F. Yang,B. P. Xie,F. Q. Song,X. G. Wan,D. L. Feng###
(1562332, 1562334)
Signature of strong spin-orbital coupling in the large non-saturating magnetoresistance material WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Signature of strong spin-orbital coupling in the large non-saturating magnetoresistance material WTe2|J. Jiang,F. Tang,X. C. Pan,H. M. Liu,X. H. Niu,Y. X. Wang,D. F. Xu,H. F. Yang,B. P. Xie,F. Q. Song,X. G. Wan,D. L. Feng###
(1562351, 1562353)
 We report the detailed electronic structure of WTe2 by high resolutionangle-resolved photoemission spectroscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Signature of strong spin-orbital coupling in the large non-saturating magnetoresistance material WTe2|J. Jiang,F. Tang,X. C. Pan,H. M. Liu,X. H. Niu,Y. X. Wang,D. F. Xu,H. F. Yang,B. P. Xie,F. Q. Song,X. G. Wan,D. L. Feng###
(1562422, 1562424)
 Unlike the simple one electron plusone hole pocket type of Fermi surface topology reported before, we resolved arather complicated Fermi surface of WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Signature of strong spin-orbital coupling in the large non-saturating magnetoresistance material WTe2|J. Jiang,F. Tang,X. C. Pan,H. M. Liu,X. H. Niu,Y. X. Wang,D. F. Xu,H. F. Yang,B. P. Xie,F. Q. Song,X. G. Wan,D. L. Feng###
(1562566, 1562566)
 As reported previously for topological insulators and Rashibasystems, such a circular dichroism is a signature for spin-orbital coupling(SOC).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(SOC)
###Signature of strong spin-orbital coupling in the large non-saturating magnetoresistance material WTe2|J. Jiang,F. Tang,X. C. Pan,H. M. Liu,X. H. Niu,Y. X. Wang,D. F. Xu,H. F. Yang,B. P. Xie,F. Q. Song,X. G. Wan,D. L. Feng###
(1562609, 1562613)
 As reported previously for topological insulators and Rashibasystems, such a circular dichroism is a signature for spin-orbital coupling(SOC).
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SOC
###Signature of strong spin-orbital coupling in the large non-saturating magnetoresistance material WTe2|J. Jiang,F. Tang,X. C. Pan,H. M. Liu,X. H. Niu,Y. X. Wang,D. F. Xu,H. F. Yang,B. P. Xie,F. Q. Song,X. G. Wan,D. L. Feng###
(1562663, 1562665)
 This is further confirmed by our density functional theory calculations,where the spin texture is qualitatively reproduced as the conjugate consequenceof SOC.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SOC
###Signature of strong spin-orbital coupling in the large non-saturating magnetoresistance material WTe2|J. Jiang,F. Tang,X. C. Pan,H. M. Liu,X. H. Niu,Y. X. Wang,D. F. Xu,H. F. Yang,B. P. Xie,F. Q. Song,X. G. Wan,D. L. Feng###
(1562700, 1562702)
 Since the backscattering processes are directly involved with theresistivity, our data suggest that the SOC and the related spin and orbitalangular momentum textures may be considered in the understanding of theanomalous magnetoresistance of WTe2.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Signature of strong spin-orbital coupling in the large non-saturating magnetoresistance material WTe2|J. Jiang,F. Tang,X. C. Pan,H. M. Liu,X. H. Niu,Y. X. Wang,D. F. Xu,H. F. Yang,B. P. Xie,F. Q. Song,X. G. Wan,D. L. Feng###
(1562746, 1562748)
 Since the backscattering processes are directly involved with theresistivity, our data suggest that the SOC and the related spin and orbitalangular momentum textures may be considered in the understanding of theanomalous magnetoresistance of WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LiFeAs
###Molecular Beam Epitaxy Growth of Superconducting LiFeAs Film on SrTiO3(001) Substrate|Kai Chang,Peng Deng,Teng Zhang,Hai-Cheng Lin,Kun Zhao,Shuai-Hua Ji,Lili Wang,Ke He,Xu-Cun Ma,Xi Chen,Qi-Kun Xue###
(1562771, 1562773)
Molecular Beam Epitaxy Growth of Superconducting LiFeAs Film on SrTiO3(001) Substrate.
Featurization terminated normally.
0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[238.0, 4, 'QL', 5],[241.0, 4.7, 'K', 5],[255.0, 13, 'QL', 6],[337.0, 16, 'K', 7]

O3
###Molecular Beam Epitaxy Growth of Superconducting LiFeAs Film on SrTiO3(001) Substrate|Kai Chang,Peng Deng,Teng Zhang,Hai-Cheng Lin,Kun Zhao,Shuai-Hua Ji,Lili Wang,Ke He,Xu-Cun Ma,Xi Chen,Qi-Kun Xue###
(1562781, 1562782)
Molecular Beam Epitaxy Growth of Superconducting LiFeAs Film on SrTiO3(001) Substrate.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[229.0, 4, 'QL', 5],[232.0, 4.7, 'K', 5],[246.0, 13, 'QL', 6],[328.0, 16, 'K', 7]

LiFeAs
###Molecular Beam Epitaxy Growth of Superconducting LiFeAs Film on SrTiO3(001) Substrate|Kai Chang,Peng Deng,Teng Zhang,Hai-Cheng Lin,Kun Zhao,Shuai-Hua Ji,Lili Wang,Ke He,Xu-Cun Ma,Xi Chen,Qi-Kun Xue###
(1562803, 1562805)
 The stoichiometric 111 iron-based superconductor, LiFeAs, has attactedgreat research interest in recent years.
Featurization terminated normally.
0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[206.0, 4, 'QL', 4],[209.0, 4.7, 'K', 4],[223.0, 13, 'QL', 5],[305.0, 16, 'K', 6]

LiFeAs
###Molecular Beam Epitaxy Growth of Superconducting LiFeAs Film on SrTiO3(001) Substrate|Kai Chang,Peng Deng,Teng Zhang,Hai-Cheng Lin,Kun Zhao,Shuai-Hua Ji,Lili Wang,Ke He,Xu-Cun Ma,Xi Chen,Qi-Kun Xue###
(1562844, 1562846)
 For the first time, we havesuccessfully grown LiFeAs thin film by molecular beam epitaxy (MBE) onSrTiO3(001) substrate, and studied the interfacial growth behavior byreflection high energy electron diffraction (RHEED) and low-temperaturescanning tunneling microscope (LT-STM).
Featurization terminated normally.
0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 4, 'QL', 3],[168.0, 4.7, 'K', 3],[182.0, 13, 'QL', 4],[264.0, 16, 'K', 5]

O3
###Molecular Beam Epitaxy Growth of Superconducting LiFeAs Film on SrTiO3(001) Substrate|Kai Chang,Peng Deng,Teng Zhang,Hai-Cheng Lin,Kun Zhao,Shuai-Hua Ji,Lili Wang,Ke He,Xu-Cun Ma,Xi Chen,Qi-Kun Xue###
(1562871, 1562872)
 For the first time, we havesuccessfully grown LiFeAs thin film by molecular beam epitaxy (MBE) onSrTiO3(001) substrate, and studied the interfacial growth behavior byreflection high energy electron diffraction (RHEED) and low-temperaturescanning tunneling microscope (LT-STM).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 4, 'QL', 3],[142.0, 4.7, 'K', 3],[156.0, 13, 'QL', 4],[238.0, 16, 'K', 5]

S
###Molecular Beam Epitaxy Growth of Superconducting LiFeAs Film on SrTiO3(001) Substrate|Kai Chang,Peng Deng,Teng Zhang,Hai-Cheng Lin,Kun Zhao,Shuai-Hua Ji,Lili Wang,Ke He,Xu-Cun Ma,Xi Chen,Qi-Kun Xue###
(1562930, 1562930)
 For the first time, we havesuccessfully grown LiFeAs thin film by molecular beam epitaxy (MBE) onSrTiO3(001) substrate, and studied the interfacial growth behavior byreflection high energy electron diffraction (RHEED) and low-temperaturescanning tunneling microscope (LT-STM).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 4, 'QL', 3],[84.0, 4.7, 'K', 3],[98.0, 13, 'QL', 4],[180.0, 16, 'K', 5]

Li/Fe
###Molecular Beam Epitaxy Growth of Superconducting LiFeAs Film on SrTiO3(001) Substrate|Kai Chang,Peng Deng,Teng Zhang,Hai-Cheng Lin,Kun Zhao,Shuai-Hua Ji,Lili Wang,Ke He,Xu-Cun Ma,Xi Chen,Qi-Kun Xue###
(1562949, 1562951)
 The effects of substrate temperatureand Li/Fe flux ratio were investigated.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[60.0, 4, 'QL', 2],[63.0, 4.7, 'K', 2],[77.0, 13, 'QL', 3],[159.0, 16, 'K', 4]

LiFeAs
###Molecular Beam Epitaxy Growth of Superconducting LiFeAs Film on SrTiO3(001) Substrate|Kai Chang,Peng Deng,Teng Zhang,Hai-Cheng Lin,Kun Zhao,Shuai-Hua Ji,Lili Wang,Ke He,Xu-Cun Ma,Xi Chen,Qi-Kun Xue###
(1562964, 1562966)
 Uniform LiFeAs film as thin as 3quintuple-layer (QL) is formed.
Featurization terminated normally.
0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 4, 'QL', 1],[48.0, 4.7, 'K', 1],[62.0, 13, 'QL', 2],[144.0, 16, 'K', 3]

LiFeAs
###Molecular Beam Epitaxy Growth of Superconducting LiFeAs Film on SrTiO3(001) Substrate|Kai Chang,Peng Deng,Teng Zhang,Hai-Cheng Lin,Kun Zhao,Shuai-Hua Ji,Lili Wang,Ke He,Xu-Cun Ma,Xi Chen,Qi-Kun Xue###
(1563001, 1563003)
 Superconducting gap appears in LiFeAs filmsthicker than 4 QL at 4.7 K.
Featurization terminated normally.
0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 4, 'QL', 0],[11.0, 4.7, 'K', 0],[25.0, 13, 'QL', 1],[107.0, 16, 'K', 2]

V
###Molecular Beam Epitaxy Growth of Superconducting LiFeAs Film on SrTiO3(001) Substrate|Kai Chang,Peng Deng,Teng Zhang,Hai-Cheng Lin,Kun Zhao,Shuai-Hua Ji,Lili Wang,Ke He,Xu-Cun Ma,Xi Chen,Qi-Kun Xue###
(1563060, 1563060)
 When the film is thicker than 13 QL, thesuperconducting gap determined by the distance between coherence peaks is about7 meV, close to the value of bulk material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 4, 'QL', 1],[46.0, 4.7, 'K', 1],[32.0, 13, 'QL', 0],[50.0, 16, 'K', 1]

LiFeAs
###Molecular Beam Epitaxy Growth of Superconducting LiFeAs Film on SrTiO3(001) Substrate|Kai Chang,Peng Deng,Teng Zhang,Hai-Cheng Lin,Kun Zhao,Shuai-Hua Ji,Lili Wang,Ke He,Xu-Cun Ma,Xi Chen,Qi-Kun Xue###
(1563093, 1563095)
 The ex situ transport measurementof thick LiFeAs film shows a sharp superconducting transition around 16 K.
Featurization terminated normally.
0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 4, 'QL', 2],[79.0, 4.7, 'K', 2],[65.0, 13, 'QL', 1],[15.0, 16, 'K', 0]

LiFeAs
###Molecular Beam Epitaxy Growth of Superconducting LiFeAs Film on SrTiO3(001) Substrate|Kai Chang,Peng Deng,Teng Zhang,Hai-Cheng Lin,Kun Zhao,Shuai-Hua Ji,Lili Wang,Ke He,Xu-Cun Ma,Xi Chen,Qi-Kun Xue###
(1563164, 1563166)
 The precise thickness and quality control ofLiFeAs film paves the road of growing similar ultrathin iron arsenide films.
Featurization terminated normally.
0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 4, 'QL', 4],[150.0, 4.7, 'K', 4],[136.0, 13, 'QL', 3],[54.0, 16, 'K', 2]

Cr
###Giant Anisotropic Magnetoresistance in a Quantum Anomalous Hall Insulator|A. Kandala,A. Richardella,S. Kempinger,C-X. Liu,N. Samarth###
(1563486, 1563486)
 Weexamine this question by studying the field-tilt driven crossover frompredominantly edge state transport to diffusive transport in Cr-doped(Bi,Sb)2Te3 thin films, as the system transitions from a quantum anomalous Hallinsulator to a gapless, ferromagnetic topological insulator.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 1, 'D', 1]

Bi
###Giant Anisotropic Magnetoresistance in a Quantum Anomalous Hall Insulator|A. Kandala,A. Richardella,S. Kempinger,C-X. Liu,N. Samarth###
(1563492, 1563492)
 Weexamine this question by studying the field-tilt driven crossover frompredominantly edge state transport to diffusive transport in Cr-doped(Bi,Sb)2Te3 thin films, as the system transitions from a quantum anomalous Hallinsulator to a gapless, ferromagnetic topological insulator.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 1, 'D', 1]

Sb
###Giant Anisotropic Magnetoresistance in a Quantum Anomalous Hall Insulator|A. Kandala,A. Richardella,S. Kempinger,C-X. Liu,N. Samarth###
(1563494, 1563494)
 Weexamine this question by studying the field-tilt driven crossover frompredominantly edge state transport to diffusive transport in Cr-doped(Bi,Sb)2Te3 thin films, as the system transitions from a quantum anomalous Hallinsulator to a gapless, ferromagnetic topological insulator.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 1, 'D', 1]

Te3
###Giant Anisotropic Magnetoresistance in a Quantum Anomalous Hall Insulator|A. Kandala,A. Richardella,S. Kempinger,C-X. Liu,N. Samarth###
(1563497, 1563498)
 Weexamine this question by studying the field-tilt driven crossover frompredominantly edge state transport to diffusive transport in Cr-doped(Bi,Sb)2Te3 thin films, as the system transitions from a quantum anomalous Hallinsulator to a gapless, ferromagnetic topological insulator.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 1, 'D', 1]

In
###High-field magnetoconductivity of topological semimetals with short-range potential|Hai-Zhou Lu,Song-Bo Zhang,Shun-Qing Shen###
(1563847, 1563847)
 In a strong magnetic fieldapplied along the direction that connects two Weyl nodes, we find that theconductivity along the field direction is determined by the Fermi velocity,instead of by the Landau degeneracy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeSe
###Resistivity and magnetoresistance of FeSe single crystals under Helium-gas pressure|S. Knöner,D. Zielke,S. Köhler,B. Wolf,Th. Wolf,L. Wang,A. Böhmer,C. Meingast,M. Lang###
(1564037, 1564038)
Resistivity and magnetoresistance of FeSe single crystals under Helium-gas pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 800, 'MPa', 1],[64.0, 10, 'T', 1],[102.0, 90, 'K', 2],[142.0, -31, 'K', 3],[181.0, 8.6, 'K', 4]

FeSe
###Resistivity and magnetoresistance of FeSe single crystals under Helium-gas pressure|S. Knöner,D. Zielke,S. Köhler,B. Wolf,Th. Wolf,L. Wang,A. Böhmer,C. Meingast,M. Lang###
(1564071, 1564072)
 We present temperature-dependent in-plane resistivity measurements on FeSesingle crystals under He-gas pressure up to 800 MPa and magnetic fields Bleq 10 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 800, 'MPa', 0],[30.0, 10, 'T', 0],[68.0, 90, 'K', 1],[108.0, -31, 'K', 2],[147.0, 8.6, 'K', 3]

He
###Resistivity and magnetoresistance of FeSe single crystals under Helium-gas pressure|S. Knöner,D. Zielke,S. Köhler,B. Wolf,Th. Wolf,L. Wang,A. Böhmer,C. Meingast,M. Lang###
(1564081, 1564081)
 We present temperature-dependent in-plane resistivity measurements on FeSesingle crystals under He-gas pressure up to 800 MPa and magnetic fields Bleq 10 T.
Featurization terminated normally.
0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 800, 'MPa', 0],[21.0, 10, 'T', 0],[59.0, 90, 'K', 1],[99.0, -31, 'K', 2],[138.0, 8.6, 'K', 3]

B
###Resistivity and magnetoresistance of FeSe single crystals under Helium-gas pressure|S. Knöner,D. Zielke,S. Köhler,B. Wolf,Th. Wolf,L. Wang,A. Böhmer,C. Meingast,M. Lang###
(1564098, 1564098)
 We present temperature-dependent in-plane resistivity measurements on FeSesingle crystals under He-gas pressure up to 800 MPa and magnetic fields Bleq 10 T.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 800, 'MPa', 0],[4.0, 10, 'T', 0],[42.0, 90, 'K', 1],[82.0, -31, 'K', 2],[121.0, 8.6, 'K', 3]

P
###Resistivity and magnetoresistance of FeSe single crystals under Helium-gas pressure|S. Knöner,D. Zielke,S. Köhler,B. Wolf,Th. Wolf,L. Wang,A. Böhmer,C. Meingast,M. Lang###
(1564177, 1564177)
 Tsbecomes reduced with increasing pressure in a linear fashion at a ratedTs/d<missing VAR>P simeq -31 K/G<missing VAR>Pa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 800, 'MPa', 2],[75.0, 10, 'T', 2],[37.0, 90, 'K', 1],[3.0, -31, 'K', 0],[42.0, 8.6, 'K', 1]

Pa
###Resistivity and magnetoresistance of FeSe single crystals under Helium-gas pressure|S. Knöner,D. Zielke,S. Köhler,B. Wolf,Th. Wolf,L. Wang,A. Böhmer,C. Meingast,M. Lang###
(1564183, 1564183)
 Tsbecomes reduced with increasing pressure in a linear fashion at a ratedTs/d<missing VAR>P simeq -31 K/G<missing VAR>Pa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 800, 'MPa', 2],[81.0, 10, 'T', 2],[43.0, 90, 'K', 1],[3.0, -31, 'K', 0],[36.0, 8.6, 'K', 1]

P
###Resistivity and magnetoresistance of FeSe single crystals under Helium-gas pressure|S. Knöner,D. Zielke,S. Köhler,B. Wolf,Th. Wolf,L. Wang,A. Böhmer,C. Meingast,M. Lang###
(1564196, 1564196)
 This is accompanied by a P-linear increaseof the superconducting transition temperature at Tc sim 8.6 K withdTc/d<missing VAR>P simeq 5.8 K/G<missing VAR>Pa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 800, 'MPa', 3],[94.0, 10, 'T', 3],[56.0, 90, 'K', 2],[16.0, -31, 'K', 1],[23.0, 8.6, 'K', 0]

P
###Resistivity and magnetoresistance of FeSe single crystals under Helium-gas pressure|S. Knöner,D. Zielke,S. Köhler,B. Wolf,Th. Wolf,L. Wang,A. Böhmer,C. Meingast,M. Lang###
(1564229, 1564229)
 This is accompanied by a P-linear increaseof the superconducting transition temperature at Tc sim 8.6 K withdTc/d<missing VAR>P simeq 5.8 K/G<missing VAR>Pa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 800, 'MPa', 3],[127.0, 10, 'T', 3],[89.0, 90, 'K', 2],[49.0, -31, 'K', 1],[10.0, 8.6, 'K', 0]

K
###Resistivity and magnetoresistance of FeSe single crystals under Helium-gas pressure|S. Knöner,D. Zielke,S. Köhler,B. Wolf,Th. Wolf,L. Wang,A. Böhmer,C. Meingast,M. Lang###
(1564235, 1564235)
 This is accompanied by a P-linear increaseof the superconducting transition temperature at Tc sim 8.6 K withdTc/d<missing VAR>P simeq 5.8 K/G<missing VAR>Pa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 800, 'MPa', 3],[133.0, 10, 'T', 3],[95.0, 90, 'K', 2],[55.0, -31, 'K', 1],[16.0, 8.6, 'K', 0]

Pa
###Resistivity and magnetoresistance of FeSe single crystals under Helium-gas pressure|S. Knöner,D. Zielke,S. Köhler,B. Wolf,Th. Wolf,L. Wang,A. Böhmer,C. Meingast,M. Lang###
(1564238, 1564238)
 This is accompanied by a P-linear increaseof the superconducting transition temperature at Tc sim 8.6 K withdTc/d<missing VAR>P simeq 5.8 K/G<missing VAR>Pa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 800, 'MPa', 3],[136.0, 10, 'T', 3],[98.0, 90, 'K', 2],[58.0, -31, 'K', 1],[19.0, 8.6, 'K', 0]

B2
###Resistivity and magnetoresistance of FeSe single crystals under Helium-gas pressure|S. Knöner,D. Zielke,S. Köhler,B. Wolf,Th. Wolf,L. Wang,A. Böhmer,C. Meingast,M. Lang###
(1564429, 1564430)
 Resistivity studiesin varying magnetic fields both at ambient and finite pressure reveal clearchanges of the magnetoresistance, Delta rho propto B2, upon coolingthrough Ts.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[339.0, 800, 'MPa', 8],[327.0, 10, 'T', 8],[289.0, 90, 'K', 7],[249.0, -31, 'K', 6],[210.0, 8.6, 'K', 5]

In
###Signature of the chiral anomaly in a Dirac semimetal: a current plume steered by a magnetic field|Jun Xiong,Satya K. Kushwaha,Tian Liang,Jason W. Krizan,Wudi Wang,R. J. Cava,N. P. Ong###
(1564519, 1564519)
 In this talk, we describe recent experimental progress in detecting thechiral anomaly in the Dirac semimetal Na3Bi in the presence of a magneticfield.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Na3Bi
###Signature of the chiral anomaly in a Dirac semimetal: a current plume steered by a magnetic field|Jun Xiong,Satya K. Kushwaha,Tian Liang,Jason W. Krizan,Wudi Wang,R. J. Cava,N. P. Ong###
(1564555, 1564557)
 In this talk, we describe recent experimental progress in detecting thechiral anomaly in the Dirac semimetal Na3Bi in the presence of a magneticfield.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Signature of the chiral anomaly in a Dirac semimetal: a current plume steered by a magnetic field|Jun Xiong,Satya K. Kushwaha,Tian Liang,Jason W. Krizan,Wudi Wang,R. J. Cava,N. P. Ong###
(1564676, 1564676)
 In the Diracsemimetal, the breaking of time-reversal symmetry by a magnetic field bf Bsplits each Dirac node into two chiral Weyl nodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Signature of the chiral anomaly in a Dirac semimetal: a current plume steered by a magnetic field|Jun Xiong,Satya K. Kushwaha,Tian Liang,Jason W. Krizan,Wudi Wang,R. J. Cava,N. P. Ong###
(1564708, 1564708)
 In the Diracsemimetal, the breaking of time-reversal symmetry by a magnetic field bf Bsplits each Dirac node into two chiral Weyl nodes.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Signature of the chiral anomaly in a Dirac semimetal: a current plume steered by a magnetic field|Jun Xiong,Satya K. Kushwaha,Tian Liang,Jason W. Krizan,Wudi Wang,R. J. Cava,N. P. Ong###
(1564753, 1564753)
 If an electric field bf E<missing VAR>is applied parallel to bf B, charge is predicted to flow between the Weylnodes.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Na3Bi
###Signature of the chiral anomaly in a Dirac semimetal: a current plume steered by a magnetic field|Jun Xiong,Satya K. Kushwaha,Tian Liang,Jason W. Krizan,Wudi Wang,R. J. Cava,N. P. Ong###
(1564792, 1564794)
 We report the observation in the Dirac semimetal Na3Bi of a novel,negative and highly anisotropic magnetoresistance (MR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Signature of the chiral anomaly in a Dirac semimetal: a current plume steered by a magnetic field|Jun Xiong,Satya K. Kushwaha,Tian Liang,Jason W. Krizan,Wudi Wang,R. J. Cava,N. P. Ong###
(1564889, 1564889)
 The novel MR is acutely sensitive to deviationsof bf B from bf E<missing VAR>, a feature incompatible with conventional transport.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeSe1-xS
###Electron carriers with possible Dirac-cone-like dispersion in FeSe$_{1-x}$S$_x$ ($x$ = 0 and 0.14) single crystals triggered by structural transition|Yue Sun,Sunseng Pyon,Tsuyoshi Tamegai###
(1564978, 1564983)
Electron carriers with possible Dirac-cone-like dispersion in FeSe1-xSx<missing VAR> (x<missing VAR>  0 and 0.14) single crystals triggered by structural transition.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[6.0, 0, 'and', 0],[54.0, 0, 'and', 1],[74.0, 14, '%', 2],[103.0, 86, 'K', 2],[113.0, 49, 'K', 2],[354.0, 30, 'K', 6]

FeSe1-xS
###Electron carriers with possible Dirac-cone-like dispersion in FeSe$_{1-x}$S$_x$ ($x$ = 0 and 0.14) single crystals triggered by structural transition|Yue Sun,Sunseng Pyon,Tsuyoshi Tamegai###
(1565025, 1565030)
 We report detailed study of the transport properties of FeSe1-xSx<missing VAR>(x<missing VAR>  0 and 0.14) single crystals grown by vapor transport method.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[36.0, 0, 'and', 1],[7.0, 0, 'and', 0],[27.0, 14, '%', 1],[56.0, 86, 'K', 1],[66.0, 49, 'K', 1],[307.0, 30, 'K', 5]

S
###Electron carriers with possible Dirac-cone-like dispersion in FeSe$_{1-x}$S$_x$ ($x$ = 0 and 0.14) single crystals triggered by structural transition|Yue Sun,Sunseng Pyon,Tsuyoshi Tamegai###
(1565060, 1565060)
 14% Sdoping is found significantly suppress the structural transition from Tssim 86 K in FeSe to sim 49 K, although the superconducting transitiontemperature, Tc, is only slightly affected.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 0, 'and', 2],[23.0, 0, 'and', 1],[3.0, 14, '%', 0],[26.0, 86, 'K', 0],[36.0, 49, 'K', 0],[277.0, 30, 'K', 4]

FeSe
###Electron carriers with possible Dirac-cone-like dispersion in FeSe$_{1-x}$S$_x$ ($x$ = 0 and 0.14) single crystals triggered by structural transition|Yue Sun,Sunseng Pyon,Tsuyoshi Tamegai###
(1565090, 1565091)
 14% Sdoping is found significantly suppress the structural transition from Tssim 86 K in FeSe to sim 49 K, although the superconducting transitiontemperature, Tc, is only slightly affected.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 0, 'and', 2],[53.0, 0, 'and', 1],[33.0, 14, '%', 0],[4.0, 86, 'K', 0],[5.0, 49, 'K', 0],[246.0, 30, 'K', 4]

FeSe
###Electron carriers with possible Dirac-cone-like dispersion in FeSe$_{1-x}$S$_x$ ($x$ = 0 and 0.14) single crystals triggered by structural transition|Yue Sun,Sunseng Pyon,Tsuyoshi Tamegai###
(1565146, 1565147)
 A pronounced linearmagnetoresistance (MR) is observed in both FeSe and FeSe0.86S0.14single crystals, which is found to be triggered by the structural transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 0, 'and', 3],[109.0, 0, 'and', 2],[89.0, 14, '%', 1],[60.0, 86, 'K', 1],[50.0, 49, 'K', 1],[190.0, 30, 'K', 3]

FeSe0.86S0.14
###Electron carriers with possible Dirac-cone-like dispersion in FeSe$_{1-x}$S$_x$ ($x$ = 0 and 0.14) single crystals triggered by structural transition|Yue Sun,Sunseng Pyon,Tsuyoshi Tamegai###
(1565151, 1565155)
 A pronounced linearmagnetoresistance (MR) is observed in both FeSe and FeSe0.86S0.14single crystals, which is found to be triggered by the structural transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.43,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 0, 'and', 3],[114.0, 0, 'and', 2],[94.0, 14, '%', 1],[65.0, 86, 'K', 1],[55.0, 49, 'K', 1],[182.0, 30, 'K', 3]

S
###Electron carriers with possible Dirac-cone-like dispersion in FeSe$_{1-x}$S$_x$ ($x$ = 0 and 0.14) single crystals triggered by structural transition|Yue Sun,Sunseng Pyon,Tsuyoshi Tamegai###
(1565271, 1565271)
 The mobility of the Dirac-cone-like band is found todecrease after S doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[282.0, 0, 'and', 5],[234.0, 0, 'and', 4],[214.0, 14, '%', 3],[185.0, 86, 'K', 3],[175.0, 49, 'K', 3],[66.0, 30, 'K', 1]

FeSe
###Electron carriers with possible Dirac-cone-like dispersion in FeSe$_{1-x}$S$_x$ ($x$ = 0 and 0.14) single crystals triggered by structural transition|Yue Sun,Sunseng Pyon,Tsuyoshi Tamegai###
(1565345, 1565346)
 Besides, the invalid Kohlers<missing VAR> scaling of MR is foundfor temperature below Ts in both crystals, however the re-establishment ofthe Kohlers<missing VAR> scaling at temperatures below 30 K is observed in FeSe, but not inFeSe0.86S0.14.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[356.0, 0, 'and', 6],[308.0, 0, 'and', 5],[288.0, 14, '%', 4],[259.0, 86, 'K', 4],[249.0, 49, 'K', 4],[8.0, 30, 'K', 0]

FeSe0.86S0.14
###Electron carriers with possible Dirac-cone-like dispersion in FeSe$_{1-x}$S$_x$ ($x$ = 0 and 0.14) single crystals triggered by structural transition|Yue Sun,Sunseng Pyon,Tsuyoshi Tamegai###
(1565356, 1565360)
 Besides, the invalid Kohlers<missing VAR> scaling of MR is foundfor temperature below Ts in both crystals, however the re-establishment ofthe Kohlers<missing VAR> scaling at temperatures below 30 K is observed in FeSe, but not inFeSe0.86S0.14.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.43,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[367.0, 0, 'and', 6],[319.0, 0, 'and', 5],[299.0, 14, '%', 4],[270.0, 86, 'K', 4],[260.0, 49, 'K', 4],[19.0, 30, 'K', 0]

FeSe
###Electron carriers with possible Dirac-cone-like dispersion in FeSe$_{1-x}$S$_x$ ($x$ = 0 and 0.14) single crystals triggered by structural transition|Yue Sun,Sunseng Pyon,Tsuyoshi Tamegai###
(1565392, 1565393)
 All these observations above support that the orbitalordering causes the band reconstruction in FeSe, and also that the orbitalordering in FeSe is suppressed by the chemical pressure from S doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[403.0, 0, 'and', 7],[355.0, 0, 'and', 6],[335.0, 14, '%', 5],[306.0, 86, 'K', 5],[296.0, 49, 'K', 5],[55.0, 30, 'K', 1]

FeSe
###Electron carriers with possible Dirac-cone-like dispersion in FeSe$_{1-x}$S$_x$ ($x$ = 0 and 0.14) single crystals triggered by structural transition|Yue Sun,Sunseng Pyon,Tsuyoshi Tamegai###
(1565411, 1565412)
 All these observations above support that the orbitalordering causes the band reconstruction in FeSe, and also that the orbitalordering in FeSe is suppressed by the chemical pressure from S doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[422.0, 0, 'and', 7],[374.0, 0, 'and', 6],[354.0, 14, '%', 5],[325.0, 86, 'K', 5],[315.0, 49, 'K', 5],[74.0, 30, 'K', 1]

S
###Electron carriers with possible Dirac-cone-like dispersion in FeSe$_{1-x}$S$_x$ ($x$ = 0 and 0.14) single crystals triggered by structural transition|Yue Sun,Sunseng Pyon,Tsuyoshi Tamegai###
(1565428, 1565428)
 All these observations above support that the orbitalordering causes the band reconstruction in FeSe, and also that the orbitalordering in FeSe is suppressed by the chemical pressure from S doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[439.0, 0, 'and', 7],[391.0, 0, 'and', 6],[371.0, 14, '%', 5],[342.0, 86, 'K', 5],[332.0, 49, 'K', 5],[91.0, 30, 'K', 1]

P
###Quantum Critical Behavior in a Concentrated Ternary Solid Solution|Brian C. Sales,Ke Jin,Hongbin Bei,G. Malcolm Stocks,German D. Samolyuk,Andrew F. May,Michael A. McGuire###
(1565522, 1565522)
 Much ofthe research into quantum critical point (Q<missing VAR>CP) physics has been hampered by thelack of model systems simple enough to be analyzed by theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 1, 'is', 2],[207.0, 2, 'K', 3],[289.0, 1, 'are', 4]

NiCo
###Quantum Critical Behavior in a Concentrated Ternary Solid Solution|Brian C. Sales,Ke Jin,Hongbin Bei,G. Malcolm Stocks,German D. Samolyuk,Andrew F. May,Michael A. McGuire###
(1565655, 1565656)
 The facecentered cubic (fcc) alloy NiCoCrx with x<missing VAR> near 1 is found to be close to the Crconcentration where the ferromagnetic transition temperature, Tc, goes to 0.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 1, 'is', 0],[73.0, 2, 'K', 1],[155.0, 1, 'are', 2]

Cr
###Quantum Critical Behavior in a Concentrated Ternary Solid Solution|Brian C. Sales,Ke Jin,Hongbin Bei,G. Malcolm Stocks,German D. Samolyuk,Andrew F. May,Michael A. McGuire###
(1565678, 1565678)
 The facecentered cubic (fcc) alloy NiCoCrx with x<missing VAR> near 1 is found to be close to the Crconcentration where the ferromagnetic transition temperature, Tc, goes to 0.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 1, 'is', 0],[51.0, 2, 'K', 1],[133.0, 1, 'are', 2]

Tc
###Quantum Critical Behavior in a Concentrated Ternary Solid Solution|Brian C. Sales,Ke Jin,Hongbin Bei,G. Malcolm Stocks,German D. Samolyuk,Andrew F. May,Michael A. McGuire###
(1565694, 1565694)
 The facecentered cubic (fcc) alloy NiCoCrx with x<missing VAR> near 1 is found to be close to the Crconcentration where the ferromagnetic transition temperature, Tc, goes to 0.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 1, 'is', 0],[35.0, 2, 'K', 1],[117.0, 1, 'are', 2]

Gd3Ir4Sn13
###Double-phase transition and giant positive magnetoresistance in the quasi-skutterudite Gd$_3$Ir$_4$Sn$_{13}$|Harikrishnan S. Nair,Sarit K. Ghosh,Ramesh Kumar,André M. Strydom###
(1565939, 1565944)
Double-phase transition and giant positive magnetoresistance in the quasi-skutterudite Gd3Ir4Sn13.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.65,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[268.0, 80, '%', 5]

Gd3Ir4Sn13
###Double-phase transition and giant positive magnetoresistance in the quasi-skutterudite Gd$_3$Ir$_4$Sn$_{13}$|Harikrishnan S. Nair,Sarit K. Ghosh,Ramesh Kumar,André M. Strydom###
(1565977, 1565982)
 The magnetic, thermodynamic and electrical/thermal transport properties ofthe caged-structure quasi-skutterudite Gd3Ir4Sn13 arere-investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.65,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[230.0, 80, '%', 4]

C
###Double-phase transition and giant positive magnetoresistance in the quasi-skutterudite Gd$_3$Ir$_4$Sn$_{13}$|Harikrishnan S. Nair,Sarit K. Ghosh,Ramesh Kumar,André M. Strydom###
(1566006, 1566006)
 The magnetization M(T), specific heat Cp(T) and theresistivity rho(T) reveal a double-phase transition -- at T<missing VAR>N1sim 10Kand at T<missing VAR>N2sim 8.8K -- which was not observed in the previous report onthis compound.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[206.0, 80, '%', 3]

N1
###Double-phase transition and giant positive magnetoresistance in the quasi-skutterudite Gd$_3$Ir$_4$Sn$_{13}$|Harikrishnan S. Nair,Sarit K. Ghosh,Ramesh Kumar,André M. Strydom###
(1566040, 1566041)
 The magnetization M(T), specific heat Cp(T) and theresistivity rho(T) reveal a double-phase transition -- at T<missing VAR>N1sim 10Kand at T<missing VAR>N2sim 8.8K -- which was not observed in the previous report onthis compound.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[171.0, 80, '%', 3]

K
###Double-phase transition and giant positive magnetoresistance in the quasi-skutterudite Gd$_3$Ir$_4$Sn$_{13}$|Harikrishnan S. Nair,Sarit K. Ghosh,Ramesh Kumar,André M. Strydom###
(1566045, 1566045)
 The magnetization M(T), specific heat Cp(T) and theresistivity rho(T) reveal a double-phase transition -- at T<missing VAR>N1sim 10Kand at T<missing VAR>N2sim 8.8K -- which was not observed in the previous report onthis compound.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 80, '%', 3]

N2
###Double-phase transition and giant positive magnetoresistance in the quasi-skutterudite Gd$_3$Ir$_4$Sn$_{13}$|Harikrishnan S. Nair,Sarit K. Ghosh,Ramesh Kumar,André M. Strydom###
(1566053, 1566054)
 The magnetization M(T), specific heat Cp(T) and theresistivity rho(T) reveal a double-phase transition -- at T<missing VAR>N1sim 10Kand at T<missing VAR>N2sim 8.8K -- which was not observed in the previous report onthis compound.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 80, '%', 3]

K
###Double-phase transition and giant positive magnetoresistance in the quasi-skutterudite Gd$_3$Ir$_4$Sn$_{13}$|Harikrishnan S. Nair,Sarit K. Ghosh,Ramesh Kumar,André M. Strydom###
(1566058, 1566058)
 The magnetization M(T), specific heat Cp(T) and theresistivity rho(T) reveal a double-phase transition -- at T<missing VAR>N1sim 10Kand at T<missing VAR>N2sim 8.8K -- which was not observed in the previous report onthis compound.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 80, '%', 3]

Sn
###Double-phase transition and giant positive magnetoresistance in the quasi-skutterudite Gd$_3$Ir$_4$Sn$_{13}$|Harikrishnan S. Nair,Sarit K. Ghosh,Ramesh Kumar,André M. Strydom###
(1566142, 1566142)
 The antiferromagnetic transition is also visible in the thermaltransport data, thereby suggesting a close connection between the electronicand lattice degrees of freedom in this Sn-based quasi-skutterudite.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 80, '%', 2]

Gd3Ir4Sn13
###Double-phase transition and giant positive magnetoresistance in the quasi-skutterudite Gd$_3$Ir$_4$Sn$_{13}$|Harikrishnan S. Nair,Sarit K. Ghosh,Ramesh Kumar,André M. Strydom###
(1566221, 1566226)
 Giant, positivemagnetoresistance (MR) approx 80% is observed in Gd3Ir4Sn13 at2K with the application of 9T<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.65,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 80, '%', 0]

K
###Double-phase transition and giant positive magnetoresistance in the quasi-skutterudite Gd$_3$Ir$_4$Sn$_{13}$|Harikrishnan S. Nair,Sarit K. Ghosh,Ramesh Kumar,André M. Strydom###
(1566232, 1566232)
 Giant, positivemagnetoresistance (MR) approx 80% is observed in Gd3Ir4Sn13 at2K with the application of 9T<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 80, '%', 0]

Gd3Ir4Sn13
###Double-phase transition and giant positive magnetoresistance in the quasi-skutterudite Gd$_3$Ir$_4$Sn$_{13}$|Harikrishnan S. Nair,Sarit K. Ghosh,Ramesh Kumar,André M. Strydom###
(1566289, 1566294)
 The giant MR and the double magnetictransition can be attributed to the quasi-cages and layered antiferromagneticstructure of Gd3Ir4Sn13 vulnerable to structural distortions and/ordipolar or spin-reorientation effects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.65,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 80, '%', 1]

Gd
###Double-phase transition and giant positive magnetoresistance in the quasi-skutterudite Gd$_3$Ir$_4$Sn$_{13}$|Harikrishnan S. Nair,Sarit K. Ghosh,Ramesh Kumar,André M. Strydom###
(1566357, 1566357)
 The giant value of MR observed in thisclass of 3413 type alloys, especially in a Gd-compound, is the highlight ofthis work.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 80, '%', 2]

WTe2
###Single- and Few-Layer WTe2 and Their Suspended Nanostructures: Raman Signatures and Nanomechanical Resonances|Jaesung Lee,Fan Ye,Zenghui Wang,Rui Yang,Jin Hu,Zhiqiang Mao,Jiang Wei,Philip X. -L. Feng###
(1566393, 1566395)
Single- and Few-Layer WTe2 and Their Suspended Nanostructures Raman Signatures and Nanomechanical Resonances.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(WTe2)
###Single- and Few-Layer WTe2 and Their Suspended Nanostructures: Raman Signatures and Nanomechanical Resonances|Jaesung Lee,Fan Ye,Zenghui Wang,Rui Yang,Jin Hu,Zhiqiang Mao,Jiang Wei,Philip X. -L. Feng###
(1566424, 1566428)
 Single crystal tungsten ditelluride (WTe2) has recently been discovered toexhibit non-saturating extreme magnetoresistance in bulk; it has also emergedas a new layered material from which atomic layer crystals can be extracted.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Single- and Few-Layer WTe2 and Their Suspended Nanostructures: Raman Signatures and Nanomechanical Resonances|Jaesung Lee,Fan Ye,Zenghui Wang,Rui Yang,Jin Hu,Zhiqiang Mao,Jiang Wei,Philip X. -L. Feng###
(1566499, 1566501)
While atomically thin WTe2 is attractive for its unique properties, littlestudy has been conducted on single- and few-layer WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Single- and Few-Layer WTe2 and Their Suspended Nanostructures: Raman Signatures and Nanomechanical Resonances|Jaesung Lee,Fan Ye,Zenghui Wang,Rui Yang,Jin Hu,Zhiqiang Mao,Jiang Wei,Philip X. -L. Feng###
(1566538, 1566540)
While atomically thin WTe2 is attractive for its unique properties, littlestudy has been conducted on single- and few-layer WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Single- and Few-Layer WTe2 and Their Suspended Nanostructures: Raman Signatures and Nanomechanical Resonances|Jaesung Lee,Fan Ye,Zenghui Wang,Rui Yang,Jin Hu,Zhiqiang Mao,Jiang Wei,Philip X. -L. Feng###
(1566565, 1566567)
 Here we report theisolation of single- and few-layer WTe2, as well as fabrication andcharacterization of the first WTe2 suspended nanostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Single- and Few-Layer WTe2 and Their Suspended Nanostructures: Raman Signatures and Nanomechanical Resonances|Jaesung Lee,Fan Ye,Zenghui Wang,Rui Yang,Jin Hu,Zhiqiang Mao,Jiang Wei,Philip X. -L. Feng###
(1566589, 1566591)
 Here we report theisolation of single- and few-layer WTe2, as well as fabrication andcharacterization of the first WTe2 suspended nanostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Single- and Few-Layer WTe2 and Their Suspended Nanostructures: Raman Signatures and Nanomechanical Resonances|Jaesung Lee,Fan Ye,Zenghui Wang,Rui Yang,Jin Hu,Zhiqiang Mao,Jiang Wei,Philip X. -L. Feng###
(1566617, 1566619)
 We have observednew Raman signatures of few-layer WTe2 that have been theoretically predictedbut not yet reported to date, in both on-substrate and suspended WTe2 flakes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Single- and Few-Layer WTe2 and Their Suspended Nanostructures: Raman Signatures and Nanomechanical Resonances|Jaesung Lee,Fan Ye,Zenghui Wang,Rui Yang,Jin Hu,Zhiqiang Mao,Jiang Wei,Philip X. -L. Feng###
(1566657, 1566659)
 We have observednew Raman signatures of few-layer WTe2 that have been theoretically predictedbut not yet reported to date, in both on-substrate and suspended WTe2 flakes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Single- and Few-Layer WTe2 and Their Suspended Nanostructures: Raman Signatures and Nanomechanical Resonances|Jaesung Lee,Fan Ye,Zenghui Wang,Rui Yang,Jin Hu,Zhiqiang Mao,Jiang Wei,Philip X. -L. Feng###
(1566683, 1566685)
We have further probed the nanomechanical properties of suspended WTe2structures by measuring their flexural resonances, and obtain a Youngs<missing VAR> modulusof E<missing VAR>Y80G<missing VAR>Pa for the suspended WTe2 flakes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Y80
###Single- and Few-Layer WTe2 and Their Suspended Nanostructures: Raman Signatures and Nanomechanical Resonances|Jaesung Lee,Fan Ye,Zenghui Wang,Rui Yang,Jin Hu,Zhiqiang Mao,Jiang Wei,Philip X. -L. Feng###
(1566716, 1566717)
We have further probed the nanomechanical properties of suspended WTe2structures by measuring their flexural resonances, and obtain a Youngs<missing VAR> modulusof E<missing VAR>Y80G<missing VAR>Pa for the suspended WTe2 flakes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pa
###Single- and Few-Layer WTe2 and Their Suspended Nanostructures: Raman Signatures and Nanomechanical Resonances|Jaesung Lee,Fan Ye,Zenghui Wang,Rui Yang,Jin Hu,Zhiqiang Mao,Jiang Wei,Philip X. -L. Feng###
(1566719, 1566719)
We have further probed the nanomechanical properties of suspended WTe2structures by measuring their flexural resonances, and obtain a Youngs<missing VAR> modulusof E<missing VAR>Y80G<missing VAR>Pa for the suspended WTe2 flakes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Single- and Few-Layer WTe2 and Their Suspended Nanostructures: Raman Signatures and Nanomechanical Resonances|Jaesung Lee,Fan Ye,Zenghui Wang,Rui Yang,Jin Hu,Zhiqiang Mao,Jiang Wei,Philip X. -L. Feng###
(1566727, 1566729)
We have further probed the nanomechanical properties of suspended WTe2structures by measuring their flexural resonances, and obtain a Youngs<missing VAR> modulusof E<missing VAR>Y80G<missing VAR>Pa for the suspended WTe2 flakes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Single- and Few-Layer WTe2 and Their Suspended Nanostructures: Raman Signatures and Nanomechanical Resonances|Jaesung Lee,Fan Ye,Zenghui Wang,Rui Yang,Jin Hu,Zhiqiang Mao,Jiang Wei,Philip X. -L. Feng###
(1566779, 1566781)
 This study paves the way for futureinvestigations and utilization of the multiple new Raman fingerprints ofsingle- and few-layer WTe2, and for exploring mechanical control of WTe2 atomiclayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Single- and Few-Layer WTe2 and Their Suspended Nanostructures: Raman Signatures and Nanomechanical Resonances|Jaesung Lee,Fan Ye,Zenghui Wang,Rui Yang,Jin Hu,Zhiqiang Mao,Jiang Wei,Philip X. -L. Feng###
(1566796, 1566798)
 This study paves the way for futureinvestigations and utilization of the multiple new Raman fingerprints ofsingle- and few-layer WTe2, and for exploring mechanical control of WTe2 atomiclayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CV
###Low-temperature quantum transport in CVD-grown single crystal graphene|Shaohua Xiang,Vaidotas Miseikis,Luca Planat,Stefano Guiducci,Stefano Roddaro,Camilla Coletti,Fabio Beltram,Stefan Heun###
(1566824, 1566825)
Low-temperature quantum transport in CVD<missing VAR>-grown single crystal graphene.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[294.0, 10, 'V', 6],[306.0, 11000, 'cm', 6]

CV
###Low-temperature quantum transport in CVD-grown single crystal graphene|Shaohua Xiang,Vaidotas Miseikis,Luca Planat,Stefano Guiducci,Stefano Roddaro,Camilla Coletti,Fabio Beltram,Stefan Heun###
(1566844, 1566845)
 Chemical vapor deposition (CVD) has been proposed for large-scale graphenesynthesis for practical applications.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[274.0, 10, 'V', 5],[286.0, 11000, 'cm', 5]

CV
###Low-temperature quantum transport in CVD-grown single crystal graphene|Shaohua Xiang,Vaidotas Miseikis,Luca Planat,Stefano Guiducci,Stefano Roddaro,Camilla Coletti,Fabio Beltram,Stefan Heun###
(1566887, 1566888)
 However, the inferior electronicproperties of CVD<missing VAR> graphene are one of the key problems to be solved.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[231.0, 10, 'V', 4],[243.0, 11000, 'cm', 4]

In
###Low-temperature quantum transport in CVD-grown single crystal graphene|Shaohua Xiang,Vaidotas Miseikis,Luca Planat,Stefano Guiducci,Stefano Roddaro,Camilla Coletti,Fabio Beltram,Stefan Heun###
(1566912, 1566912)
 In thisstudy, we present a detailed study on the electronic properties of high-qualitysingle crystal monolayer graphene.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[207.0, 10, 'V', 3],[219.0, 11000, 'cm', 3]

CV
###Low-temperature quantum transport in CVD-grown single crystal graphene|Shaohua Xiang,Vaidotas Miseikis,Luca Planat,Stefano Guiducci,Stefano Roddaro,Camilla Coletti,Fabio Beltram,Stefan Heun###
(1566964, 1566965)
 The graphene is grown by CVD<missing VAR> on copper usinga cold-wall reactor and then transferred to Si/SiO2.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 10, 'V', 2],[166.0, 11000, 'cm', 2]

Si/SiO2
###Low-temperature quantum transport in CVD-grown single crystal graphene|Shaohua Xiang,Vaidotas Miseikis,Luca Planat,Stefano Guiducci,Stefano Roddaro,Camilla Coletti,Fabio Beltram,Stefan Heun###
(1566991, 1566995)
 The graphene is grown by CVD<missing VAR> on copper usinga cold-wall reactor and then transferred to Si/SiO2.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[124.0, 10, 'V', 2],[136.0, 11000, 'cm', 2]

CV
###Low-temperature quantum transport in CVD-grown single crystal graphene|Shaohua Xiang,Vaidotas Miseikis,Luca Planat,Stefano Guiducci,Stefano Roddaro,Camilla Coletti,Fabio Beltram,Stefan Heun###
(1567030, 1567031)
 Our low-temperaturemagneto-transport data demonstrate that the characteristics of the measuredsingle-crystal CVD<missing VAR> graphene samples are superior to those of polycrystallinegraphene and have a quality which is comparable to that of exfoliated grapheneon Si/SiO2.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 10, 'V', 1],[100.0, 11000, 'cm', 1]

Si/SiO2
###Low-temperature quantum transport in CVD-grown single crystal graphene|Shaohua Xiang,Vaidotas Miseikis,Luca Planat,Stefano Guiducci,Stefano Roddaro,Camilla Coletti,Fabio Beltram,Stefan Heun###
(1567080, 1567084)
 Our low-temperaturemagneto-transport data demonstrate that the characteristics of the measuredsingle-crystal CVD<missing VAR> graphene samples are superior to those of polycrystallinegraphene and have a quality which is comparable to that of exfoliated grapheneon Si/SiO2.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[35.0, 10, 'V', 1],[47.0, 11000, 'cm', 1]

At
###Low-temperature quantum transport in CVD-grown single crystal graphene|Shaohua Xiang,Vaidotas Miseikis,Luca Planat,Stefano Guiducci,Stefano Roddaro,Camilla Coletti,Fabio Beltram,Stefan Heun###
(1567199, 1567199)
At low magnetic field, the magnetoresistance shows a clear weak localizationpeak.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 10, 'V', 2],[68.0, 11000, 'cm', 2]

S
###Current-induced asymmetric magnetoresistance due to energy transfer via quantum spin-flip process|K. J. Kim,T. Moriyama,T. Koyama,D. Chiba,S. W. Lee,S. J. Lee,K. J. Lee,H. W. Lee,T. Ono###
(1567372, 1567372)
 Current-induced magnetization excitation is a core phenomenon fornext-generation magnetic nanodevices, and has been attributed to thespin-transfer torque (STT) that originates from the transfer of the spinangular momentum between a conduction electron and a local magnetic momentthrough the exchange coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Current-induced asymmetric magnetoresistance due to energy transfer via quantum spin-flip process|K. J. Kim,T. Moriyama,T. Koyama,D. Chiba,S. W. Lee,S. J. Lee,K. J. Lee,H. W. Lee,T. Ono###
(1567551, 1567551)
 The magnetoresistance (MR) is found todepend significantly on the current direction down to low in-plane currents,for which STT cannot play any significant role.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Influence of Cu deposition potential on the giant magnetoresistance and surface roughness of electrodeposited Ni-Co/Cu multilayers|B. G. Tóth,L. Péter,J. Dégi,Á. Révész,D. Oszetzky,G. Molnár,I. Bakonyi###
(1567705, 1567705)
Influence of Cu deposition potential on the giant magnetoresistance and surface roughness of electrodeposited Ni-Co/Cu multilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Influence of Cu deposition potential on the giant magnetoresistance and surface roughness of electrodeposited Ni-Co/Cu multilayers|B. G. Tóth,L. Péter,J. Dégi,Á. Révész,D. Oszetzky,G. Molnár,I. Bakonyi###
(1567729, 1567729)
Influence of Cu deposition potential on the giant magnetoresistance and surface roughness of electrodeposited Ni-Co/Cu multilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co/Cu
###Influence of Cu deposition potential on the giant magnetoresistance and surface roughness of electrodeposited Ni-Co/Cu multilayers|B. G. Tóth,L. Péter,J. Dégi,Á. Révész,D. Oszetzky,G. Molnár,I. Bakonyi###
(1567731, 1567733)
Influence of Cu deposition potential on the giant magnetoresistance and surface roughness of electrodeposited Ni-Co/Cu multilayers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Co/Cu
###Influence of Cu deposition potential on the giant magnetoresistance and surface roughness of electrodeposited Ni-Co/Cu multilayers|B. G. Tóth,L. Péter,J. Dégi,Á. Révész,D. Oszetzky,G. Molnár,I. Bakonyi###
(1567752, 1567754)
 It has been shown previously for electrodeposited Co/Cu multilayers that thesingle-bath electrodeposition process can be optimized from an electrochemicalpoint of view in order to avoid unwanted Co dissolution and incorporation of Coin the non-magnetic layer during the Cu deposition pulse.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Co
###Influence of Cu deposition potential on the giant magnetoresistance and surface roughness of electrodeposited Ni-Co/Cu multilayers|B. G. Tóth,L. Péter,J. Dégi,Á. Révész,D. Oszetzky,G. Molnár,I. Bakonyi###
(1567800, 1567800)
 It has been shown previously for electrodeposited Co/Cu multilayers that thesingle-bath electrodeposition process can be optimized from an electrochemicalpoint of view in order to avoid unwanted Co dissolution and incorporation of Coin the non-magnetic layer during the Cu deposition pulse.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Influence of Cu deposition potential on the giant magnetoresistance and surface roughness of electrodeposited Ni-Co/Cu multilayers|B. G. Tóth,L. Péter,J. Dégi,Á. Révész,D. Oszetzky,G. Molnár,I. Bakonyi###
(1567810, 1567810)
 It has been shown previously for electrodeposited Co/Cu multilayers that thesingle-bath electrodeposition process can be optimized from an electrochemicalpoint of view in order to avoid unwanted Co dissolution and incorporation of Coin the non-magnetic layer during the Cu deposition pulse.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Influence of Cu deposition potential on the giant magnetoresistance and surface roughness of electrodeposited Ni-Co/Cu multilayers|B. G. Tóth,L. Péter,J. Dégi,Á. Révész,D. Oszetzky,G. Molnár,I. Bakonyi###
(1567827, 1567827)
 It has been shown previously for electrodeposited Co/Cu multilayers that thesingle-bath electrodeposition process can be optimized from an electrochemicalpoint of view in order to avoid unwanted Co dissolution and incorporation of Coin the non-magnetic layer during the Cu deposition pulse.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Influence of Cu deposition potential on the giant magnetoresistance and surface roughness of electrodeposited Ni-Co/Cu multilayers|B. G. Tóth,L. Péter,J. Dégi,Á. Révész,D. Oszetzky,G. Molnár,I. Bakonyi###
(1567834, 1567834)
 In the present work,electrodeposition of Ni-Co/Cu multilayers has been studied to clarify if thesame optimization method is appropriate when two magnetic elements are presentand if this potential results in the largest giant magnetoresistance (GMR) forthe particular alloy system studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Influence of Cu deposition potential on the giant magnetoresistance and surface roughness of electrodeposited Ni-Co/Cu multilayers|B. G. Tóth,L. Péter,J. Dégi,Á. Révész,D. Oszetzky,G. Molnár,I. Bakonyi###
(1567848, 1567848)
 In the present work,electrodeposition of Ni-Co/Cu multilayers has been studied to clarify if thesame optimization method is appropriate when two magnetic elements are presentand if this potential results in the largest giant magnetoresistance (GMR) forthe particular alloy system studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co/Cu
###Influence of Cu deposition potential on the giant magnetoresistance and surface roughness of electrodeposited Ni-Co/Cu multilayers|B. G. Tóth,L. Péter,J. Dégi,Á. Révész,D. Oszetzky,G. Molnár,I. Bakonyi###
(1567850, 1567852)
 In the present work,electrodeposition of Ni-Co/Cu multilayers has been studied to clarify if thesame optimization method is appropriate when two magnetic elements are presentand if this potential results in the largest giant magnetoresistance (GMR) forthe particular alloy system studied.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Ni
###Influence of Cu deposition potential on the giant magnetoresistance and surface roughness of electrodeposited Ni-Co/Cu multilayers|B. G. Tóth,L. Péter,J. Dégi,Á. Révész,D. Oszetzky,G. Molnár,I. Bakonyi###
(1567943, 1567943)
 For this purpose, several Ni-Co/Cumultilayers were prepared by varying the deposition potential of the Cu layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co/Cu
###Influence of Cu deposition potential on the giant magnetoresistance and surface roughness of electrodeposited Ni-Co/Cu multilayers|B. G. Tóth,L. Péter,J. Dégi,Á. Révész,D. Oszetzky,G. Molnár,I. Bakonyi###
(1567945, 1567947)
 For this purpose, several Ni-Co/Cumultilayers were prepared by varying the deposition potential of the Cu layer.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Cu
###Influence of Cu deposition potential on the giant magnetoresistance and surface roughness of electrodeposited Ni-Co/Cu multilayers|B. G. Tóth,L. Péter,J. Dégi,Á. Révész,D. Oszetzky,G. Molnár,I. Bakonyi###
(1567970, 1567970)
 For this purpose, several Ni-Co/Cumultilayers were prepared by varying the deposition potential of the Cu layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiCo
###Influence of Cu deposition potential on the giant magnetoresistance and surface roughness of electrodeposited Ni-Co/Cu multilayers|B. G. Tóth,L. Péter,J. Dégi,Á. Révész,D. Oszetzky,G. Molnár,I. Bakonyi###
(1567994, 1567995)
The composition analysis of the deposits showed that the NiCo ratio exhibits aminimum as a function of the Cu deposition potential, which can be explained byconsidering both the dissolution of Co and the mass transport of the reactants.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Influence of Cu deposition potential on the giant magnetoresistance and surface roughness of electrodeposited Ni-Co/Cu multilayers|B. G. Tóth,L. Péter,J. Dégi,Á. Révész,D. Oszetzky,G. Molnár,I. Bakonyi###
(1568016, 1568016)
The composition analysis of the deposits showed that the NiCo ratio exhibits aminimum as a function of the Cu deposition potential, which can be explained byconsidering both the dissolution of Co and the mass transport of the reactants.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Influence of Cu deposition potential on the giant magnetoresistance and surface roughness of electrodeposited Ni-Co/Cu multilayers|B. G. Tóth,L. Péter,J. Dégi,Á. Révész,D. Oszetzky,G. Molnár,I. Bakonyi###
(1568044, 1568044)
The composition analysis of the deposits showed that the NiCo ratio exhibits aminimum as a function of the Cu deposition potential, which can be explained byconsidering both the dissolution of Co and the mass transport of the reactants.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Influence of Cu deposition potential on the giant magnetoresistance and surface roughness of electrodeposited Ni-Co/Cu multilayers|B. G. Tóth,L. Péter,J. Dégi,Á. Révész,D. Oszetzky,G. Molnár,I. Bakonyi###
(1568134, 1568134)
Both the saturation GMR value and the intensity of the satellite peaks in theX<missing VAR>-ray diffractograms were highly correlated with the resulting surfaceroughness of the deposits which was strongly varying with the Cu depositionpotential.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Influence of Cu deposition potential on the giant magnetoresistance and surface roughness of electrodeposited Ni-Co/Cu multilayers|B. G. Tóth,L. Péter,J. Dégi,Á. Révész,D. Oszetzky,G. Molnár,I. Bakonyi###
(1568178, 1568178)
 Higher GMR values, lower saturation fields and more perfectmultilayer structure were observed for sufficiently positive Cu depositionpotentials only which enabled a partial Co dissolution resulting in a reducedsurface roughness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Influence of Cu deposition potential on the giant magnetoresistance and surface roughness of electrodeposited Ni-Co/Cu multilayers|B. G. Tóth,L. Péter,J. Dégi,Á. Révész,D. Oszetzky,G. Molnár,I. Bakonyi###
(1568195, 1568195)
 Higher GMR values, lower saturation fields and more perfectmultilayer structure were observed for sufficiently positive Cu depositionpotentials only which enabled a partial Co dissolution resulting in a reducedsurface roughness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(CB)
###Observation of spontaneous spin-splitting in the band structure of an n-type zinc-blende ferromagnetic semiconductor|Le Duc Anh,Pham Nam Hai,Masaaki Tanaka###
(1568313, 1568316)
 Large spin splitting in the conduction band (CB) and valence band (VB) offerromagnetic semiconductors (FM<missing VAR>Ss), predicted by the influential mean-fieldZener model[1,2] and assumed in many spintronic device proposals[3-8], hasnever been observed in the mainstream p<missing VAR>-type Mn-doped FM<missing VAR>Ss[9-15].
Featurization successful!
0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 1, ',', 0],[153.0, 50, 'meV', 1],[227.0, 16, ',', 1],[338.0, 400.0, 'These', 2],[512.0, 18, ',', 4]

(VB)
###Observation of spontaneous spin-splitting in the band structure of an n-type zinc-blende ferromagnetic semiconductor|Le Duc Anh,Pham Nam Hai,Masaaki Tanaka###
(1568324, 1568327)
 Large spin splitting in the conduction band (CB) and valence band (VB) offerromagnetic semiconductors (FM<missing VAR>Ss), predicted by the influential mean-fieldZener model[1,2] and assumed in many spintronic device proposals[3-8], hasnever been observed in the mainstream p<missing VAR>-type Mn-doped FM<missing VAR>Ss[9-15].
Featurization successful!
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 1, ',', 0],[142.0, 50, 'meV', 1],[216.0, 16, ',', 1],[327.0, 400.0, 'These', 2],[501.0, 18, ',', 4]

F
###Observation of spontaneous spin-splitting in the band structure of an n-type zinc-blende ferromagnetic semiconductor|Le Duc Anh,Pham Nam Hai,Masaaki Tanaka###
(1568337, 1568337)
 Large spin splitting in the conduction band (CB) and valence band (VB) offerromagnetic semiconductors (FM<missing VAR>Ss), predicted by the influential mean-fieldZener model[1,2] and assumed in many spintronic device proposals[3-8], hasnever been observed in the mainstream p<missing VAR>-type Mn-doped FM<missing VAR>Ss[9-15].
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 1, ',', 0],[132.0, 50, 'meV', 1],[206.0, 16, ',', 1],[317.0, 400.0, 'These', 2],[491.0, 18, ',', 4]

Mn
###Observation of spontaneous spin-splitting in the band structure of an n-type zinc-blende ferromagnetic semiconductor|Le Duc Anh,Pham Nam Hai,Masaaki Tanaka###
(1568404, 1568404)
 Large spin splitting in the conduction band (CB) and valence band (VB) offerromagnetic semiconductors (FM<missing VAR>Ss), predicted by the influential mean-fieldZener model[1,2] and assumed in many spintronic device proposals[3-8], hasnever been observed in the mainstream p<missing VAR>-type Mn-doped FM<missing VAR>Ss[9-15].
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 1, ',', 0],[65.0, 50, 'meV', 1],[139.0, 16, ',', 1],[250.0, 400.0, 'These', 2],[424.0, 18, ',', 4]

F
###Observation of spontaneous spin-splitting in the band structure of an n-type zinc-blende ferromagnetic semiconductor|Le Duc Anh,Pham Nam Hai,Masaaki Tanaka###
(1568408, 1568408)
 Large spin splitting in the conduction band (CB) and valence band (VB) offerromagnetic semiconductors (FM<missing VAR>Ss), predicted by the influential mean-fieldZener model[1,2] and assumed in many spintronic device proposals[3-8], hasnever been observed in the mainstream p<missing VAR>-type Mn-doped FM<missing VAR>Ss[9-15].
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 1, ',', 0],[61.0, 50, 'meV', 1],[135.0, 16, ',', 1],[246.0, 400.0, 'These', 2],[420.0, 18, ',', 4]

CB
###Observation of spontaneous spin-splitting in the band structure of an n-type zinc-blende ferromagnetic semiconductor|Le Duc Anh,Pham Nam Hai,Masaaki Tanaka###
(1568477, 1568478)
 Here usingtunnelling spectroscopy in Esaki-diode structures, we report the observation ofsuch a large spontaneous spin-splitting energy (DeltaE<missing VAR>  31.7 - 50 meV) inthe CB bottom of n<missing VAR>-type FM<missing VAR>S (In,Fe)As, which is surprising considering the veryweak s-d exchange interaction reported in several zinc-blende (Z<missing VAR>B) typesemiconductors[16,17].
Featurization terminated normally.
0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 1, ',', 1],[8.0, 50, 'meV', 0],[65.0, 16, ',', 0],[176.0, 400.0, 'These', 1],[350.0, 18, ',', 3]

F
###Observation of spontaneous spin-splitting in the band structure of an n-type zinc-blende ferromagnetic semiconductor|Le Duc Anh,Pham Nam Hai,Masaaki Tanaka###
(1568488, 1568488)
 Here usingtunnelling spectroscopy in Esaki-diode structures, we report the observation ofsuch a large spontaneous spin-splitting energy (DeltaE<missing VAR>  31.7 - 50 meV) inthe CB bottom of n<missing VAR>-type FM<missing VAR>S (In,Fe)As, which is surprising considering the veryweak s-d exchange interaction reported in several zinc-blende (Z<missing VAR>B) typesemiconductors[16,17].
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 1, ',', 1],[19.0, 50, 'meV', 0],[55.0, 16, ',', 0],[166.0, 400.0, 'These', 1],[340.0, 18, ',', 3]

S
###Observation of spontaneous spin-splitting in the band structure of an n-type zinc-blende ferromagnetic semiconductor|Le Duc Anh,Pham Nam Hai,Masaaki Tanaka###
(1568490, 1568490)
 Here usingtunnelling spectroscopy in Esaki-diode structures, we report the observation ofsuch a large spontaneous spin-splitting energy (DeltaE<missing VAR>  31.7 - 50 meV) inthe CB bottom of n<missing VAR>-type FM<missing VAR>S (In,Fe)As, which is surprising considering the veryweak s-d exchange interaction reported in several zinc-blende (Z<missing VAR>B) typesemiconductors[16,17].
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 1, ',', 1],[21.0, 50, 'meV', 0],[53.0, 16, ',', 0],[164.0, 400.0, 'These', 1],[338.0, 18, ',', 3]

In
###Observation of spontaneous spin-splitting in the band structure of an n-type zinc-blende ferromagnetic semiconductor|Le Duc Anh,Pham Nam Hai,Masaaki Tanaka###
(1568493, 1568493)
 Here usingtunnelling spectroscopy in Esaki-diode structures, we report the observation ofsuch a large spontaneous spin-splitting energy (DeltaE<missing VAR>  31.7 - 50 meV) inthe CB bottom of n<missing VAR>-type FM<missing VAR>S (In,Fe)As, which is surprising considering the veryweak s-d exchange interaction reported in several zinc-blende (Z<missing VAR>B) typesemiconductors[16,17].
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 1, ',', 1],[24.0, 50, 'meV', 0],[50.0, 16, ',', 0],[161.0, 400.0, 'These', 1],[335.0, 18, ',', 3]

Fe
###Observation of spontaneous spin-splitting in the band structure of an n-type zinc-blende ferromagnetic semiconductor|Le Duc Anh,Pham Nam Hai,Masaaki Tanaka###
(1568495, 1568495)
 Here usingtunnelling spectroscopy in Esaki-diode structures, we report the observation ofsuch a large spontaneous spin-splitting energy (DeltaE<missing VAR>  31.7 - 50 meV) inthe CB bottom of n<missing VAR>-type FM<missing VAR>S (In,Fe)As, which is surprising considering the veryweak s-d exchange interaction reported in several zinc-blende (Z<missing VAR>B) typesemiconductors[16,17].
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 1, ',', 1],[26.0, 50, 'meV', 0],[48.0, 16, ',', 0],[159.0, 400.0, 'These', 1],[333.0, 18, ',', 3]

As
###Observation of spontaneous spin-splitting in the band structure of an n-type zinc-blende ferromagnetic semiconductor|Le Duc Anh,Pham Nam Hai,Masaaki Tanaka###
(1568497, 1568497)
 Here usingtunnelling spectroscopy in Esaki-diode structures, we report the observation ofsuch a large spontaneous spin-splitting energy (DeltaE<missing VAR>  31.7 - 50 meV) inthe CB bottom of n<missing VAR>-type FM<missing VAR>S (In,Fe)As, which is surprising considering the veryweak s-d exchange interaction reported in several zinc-blende (Z<missing VAR>B) typesemiconductors[16,17].
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 1, ',', 1],[28.0, 50, 'meV', 0],[46.0, 16, ',', 0],[157.0, 400.0, 'These', 1],[331.0, 18, ',', 3]

B
###Observation of spontaneous spin-splitting in the band structure of an n-type zinc-blende ferromagnetic semiconductor|Le Duc Anh,Pham Nam Hai,Masaaki Tanaka###
(1568535, 1568535)
 Here usingtunnelling spectroscopy in Esaki-diode structures, we report the observation ofsuch a large spontaneous spin-splitting energy (DeltaE<missing VAR>  31.7 - 50 meV) inthe CB bottom of n<missing VAR>-type FM<missing VAR>S (In,Fe)As, which is surprising considering the veryweak s-d exchange interaction reported in several zinc-blende (Z<missing VAR>B) typesemiconductors[16,17].
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 1, ',', 1],[66.0, 50, 'meV', 0],[8.0, 16, ',', 0],[119.0, 400.0, 'These', 1],[293.0, 18, ',', 3]

In
###Observation of spontaneous spin-splitting in the band structure of an n-type zinc-blende ferromagnetic semiconductor|Le Duc Anh,Pham Nam Hai,Masaaki Tanaka###
(1568591, 1568591)
 The mean-field Zener model also fails to explainconsistently the ferromagnetism and the spin splitting energy DeltaE<missing VAR> of(In,Fe)As, because we found that the Curie temperature (T<missing VAR>C) values calculatedusing the observed DeltaE<missing VAR> are much lower than the experimental T<missing VAR>C by afactor of 400. These results urge the need for a more sophisticated theory ofFM<missing VAR>Ss.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[231.0, 1, ',', 2],[122.0, 50, 'meV', 1],[48.0, 16, ',', 1],[63.0, 400.0, 'These', 0],[237.0, 18, ',', 2]

Fe
###Observation of spontaneous spin-splitting in the band structure of an n-type zinc-blende ferromagnetic semiconductor|Le Duc Anh,Pham Nam Hai,Masaaki Tanaka###
(1568593, 1568593)
 The mean-field Zener model also fails to explainconsistently the ferromagnetism and the spin splitting energy DeltaE<missing VAR> of(In,Fe)As, because we found that the Curie temperature (T<missing VAR>C) values calculatedusing the observed DeltaE<missing VAR> are much lower than the experimental T<missing VAR>C by afactor of 400. These results urge the need for a more sophisticated theory ofFM<missing VAR>Ss.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[233.0, 1, ',', 2],[124.0, 50, 'meV', 1],[50.0, 16, ',', 1],[61.0, 400.0, 'These', 0],[235.0, 18, ',', 2]

As
###Observation of spontaneous spin-splitting in the band structure of an n-type zinc-blende ferromagnetic semiconductor|Le Duc Anh,Pham Nam Hai,Masaaki Tanaka###
(1568595, 1568595)
 The mean-field Zener model also fails to explainconsistently the ferromagnetism and the spin splitting energy DeltaE<missing VAR> of(In,Fe)As, because we found that the Curie temperature (T<missing VAR>C) values calculatedusing the observed DeltaE<missing VAR> are much lower than the experimental T<missing VAR>C by afactor of 400. These results urge the need for a more sophisticated theory ofFM<missing VAR>Ss.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[235.0, 1, ',', 2],[126.0, 50, 'meV', 1],[52.0, 16, ',', 1],[59.0, 400.0, 'These', 0],[233.0, 18, ',', 2]

C
###Observation of spontaneous spin-splitting in the band structure of an n-type zinc-blende ferromagnetic semiconductor|Le Duc Anh,Pham Nam Hai,Masaaki Tanaka###
(1568614, 1568614)
 The mean-field Zener model also fails to explainconsistently the ferromagnetism and the spin splitting energy DeltaE<missing VAR> of(In,Fe)As, because we found that the Curie temperature (T<missing VAR>C) values calculatedusing the observed DeltaE<missing VAR> are much lower than the experimental T<missing VAR>C by afactor of 400. These results urge the need for a more sophisticated theory ofFM<missing VAR>Ss.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[254.0, 1, ',', 2],[145.0, 50, 'meV', 1],[71.0, 16, ',', 1],[40.0, 400.0, 'These', 0],[214.0, 18, ',', 2]

C
###Observation of spontaneous spin-splitting in the band structure of an n-type zinc-blende ferromagnetic semiconductor|Le Duc Anh,Pham Nam Hai,Masaaki Tanaka###
(1568644, 1568644)
 The mean-field Zener model also fails to explainconsistently the ferromagnetism and the spin splitting energy DeltaE<missing VAR> of(In,Fe)As, because we found that the Curie temperature (T<missing VAR>C) values calculatedusing the observed DeltaE<missing VAR> are much lower than the experimental T<missing VAR>C by afactor of 400. These results urge the need for a more sophisticated theory ofFM<missing VAR>Ss.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[284.0, 1, ',', 2],[175.0, 50, 'meV', 1],[101.0, 16, ',', 1],[10.0, 400.0, 'These', 0],[184.0, 18, ',', 2]

F
###Observation of spontaneous spin-splitting in the band structure of an n-type zinc-blende ferromagnetic semiconductor|Le Duc Anh,Pham Nam Hai,Masaaki Tanaka###
(1568677, 1568677)
 The mean-field Zener model also fails to explainconsistently the ferromagnetism and the spin splitting energy DeltaE<missing VAR> of(In,Fe)As, because we found that the Curie temperature (T<missing VAR>C) values calculatedusing the observed DeltaE<missing VAR> are much lower than the experimental T<missing VAR>C by afactor of 400. These results urge the need for a more sophisticated theory ofFM<missing VAR>Ss.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[317.0, 1, ',', 2],[208.0, 50, 'meV', 1],[134.0, 16, ',', 1],[23.0, 400.0, 'These', 0],[151.0, 18, ',', 2]

In
###Observation of spontaneous spin-splitting in the band structure of an n-type zinc-blende ferromagnetic semiconductor|Le Duc Anh,Pham Nam Hai,Masaaki Tanaka###
(1568722, 1568722)
 Furthermore, bias-dependent tunnelling anisotropic magnetoresistance(TAMR) reveals the magnetic anisotropy of each component of the (In,Fe)As bandstructure [CB, VB, and impurity band (IB)].
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[362.0, 1, ',', 3],[253.0, 50, 'meV', 2],[179.0, 16, ',', 2],[68.0, 400.0, 'These', 1],[106.0, 18, ',', 1]

Fe
###Observation of spontaneous spin-splitting in the band structure of an n-type zinc-blende ferromagnetic semiconductor|Le Duc Anh,Pham Nam Hai,Masaaki Tanaka###
(1568724, 1568724)
 Furthermore, bias-dependent tunnelling anisotropic magnetoresistance(TAMR) reveals the magnetic anisotropy of each component of the (In,Fe)As bandstructure [CB, VB, and impurity band (IB)].
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[364.0, 1, ',', 3],[255.0, 50, 'meV', 2],[181.0, 16, ',', 2],[70.0, 400.0, 'These', 1],[104.0, 18, ',', 1]

As
###Observation of spontaneous spin-splitting in the band structure of an n-type zinc-blende ferromagnetic semiconductor|Le Duc Anh,Pham Nam Hai,Masaaki Tanaka###
(1568726, 1568726)
 Furthermore, bias-dependent tunnelling anisotropic magnetoresistance(TAMR) reveals the magnetic anisotropy of each component of the (In,Fe)As bandstructure [CB, VB, and impurity band (IB)].
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[366.0, 1, ',', 3],[257.0, 50, 'meV', 2],[183.0, 16, ',', 2],[72.0, 400.0, 'These', 1],[102.0, 18, ',', 1]

CB
###Observation of spontaneous spin-splitting in the band structure of an n-type zinc-blende ferromagnetic semiconductor|Le Duc Anh,Pham Nam Hai,Masaaki Tanaka###
(1568734, 1568735)
 Furthermore, bias-dependent tunnelling anisotropic magnetoresistance(TAMR) reveals the magnetic anisotropy of each component of the (In,Fe)As bandstructure [CB, VB, and impurity band (IB)].
Featurization terminated normally.
0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[374.0, 1, ',', 3],[265.0, 50, 'meV', 2],[191.0, 16, ',', 2],[80.0, 400.0, 'These', 1],[93.0, 18, ',', 1]

VB
###Observation of spontaneous spin-splitting in the band structure of an n-type zinc-blende ferromagnetic semiconductor|Le Duc Anh,Pham Nam Hai,Masaaki Tanaka###
(1568738, 1568739)
 Furthermore, bias-dependent tunnelling anisotropic magnetoresistance(TAMR) reveals the magnetic anisotropy of each component of the (In,Fe)As bandstructure [CB, VB, and impurity band (IB)].
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[378.0, 1, ',', 3],[269.0, 50, 'meV', 2],[195.0, 16, ',', 2],[84.0, 400.0, 'These', 1],[89.0, 18, ',', 1]

(IB)
###Observation of spontaneous spin-splitting in the band structure of an n-type zinc-blende ferromagnetic semiconductor|Le Duc Anh,Pham Nam Hai,Masaaki Tanaka###
(1568748, 1568751)
 Furthermore, bias-dependent tunnelling anisotropic magnetoresistance(TAMR) reveals the magnetic anisotropy of each component of the (In,Fe)As bandstructure [CB, VB, and impurity band (IB)].
Featurization successful!
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[388.0, 1, ',', 3],[279.0, 50, 'meV', 2],[205.0, 16, ',', 2],[94.0, 400.0, 'These', 1],[77.0, 18, ',', 1]

IB
###Observation of spontaneous spin-splitting in the band structure of an n-type zinc-blende ferromagnetic semiconductor|Le Duc Anh,Pham Nam Hai,Masaaki Tanaka###
(1568772, 1568773)
 The results suggest that the energyrange of IB overlaps with the CB bottom or VB top, which may be important tounderstand the strong s-d exchange interaction in (In,Fe)As[18,19].
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[412.0, 1, ',', 4],[303.0, 50, 'meV', 3],[229.0, 16, ',', 3],[118.0, 400.0, 'These', 2],[55.0, 18, ',', 0]

CB
###Observation of spontaneous spin-splitting in the band structure of an n-type zinc-blende ferromagnetic semiconductor|Le Duc Anh,Pham Nam Hai,Masaaki Tanaka###
(1568781, 1568782)
 The results suggest that the energyrange of IB overlaps with the CB bottom or VB top, which may be important tounderstand the strong s-d exchange interaction in (In,Fe)As[18,19].
Featurization terminated normally.
0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[421.0, 1, ',', 4],[312.0, 50, 'meV', 3],[238.0, 16, ',', 3],[127.0, 400.0, 'These', 2],[46.0, 18, ',', 0]

VB
###Observation of spontaneous spin-splitting in the band structure of an n-type zinc-blende ferromagnetic semiconductor|Le Duc Anh,Pham Nam Hai,Masaaki Tanaka###
(1568788, 1568789)
 The results suggest that the energyrange of IB overlaps with the CB bottom or VB top, which may be important tounderstand the strong s-d exchange interaction in (In,Fe)As[18,19].
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[428.0, 1, ',', 4],[319.0, 50, 'meV', 3],[245.0, 16, ',', 3],[134.0, 400.0, 'These', 2],[39.0, 18, ',', 0]

In
###Observation of spontaneous spin-splitting in the band structure of an n-type zinc-blende ferromagnetic semiconductor|Le Duc Anh,Pham Nam Hai,Masaaki Tanaka###
(1568822, 1568822)
 The results suggest that the energyrange of IB overlaps with the CB bottom or VB top, which may be important tounderstand the strong s-d exchange interaction in (In,Fe)As[18,19].
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[462.0, 1, ',', 4],[353.0, 50, 'meV', 3],[279.0, 16, ',', 3],[168.0, 400.0, 'These', 2],[6.0, 18, ',', 0]

Fe
###Observation of spontaneous spin-splitting in the band structure of an n-type zinc-blende ferromagnetic semiconductor|Le Duc Anh,Pham Nam Hai,Masaaki Tanaka###
(1568824, 1568824)
 The results suggest that the energyrange of IB overlaps with the CB bottom or VB top, which may be important tounderstand the strong s-d exchange interaction in (In,Fe)As[18,19].
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[464.0, 1, ',', 4],[355.0, 50, 'meV', 3],[281.0, 16, ',', 3],[170.0, 400.0, 'These', 2],[4.0, 18, ',', 0]

As
###Observation of spontaneous spin-splitting in the band structure of an n-type zinc-blende ferromagnetic semiconductor|Le Duc Anh,Pham Nam Hai,Masaaki Tanaka###
(1568826, 1568826)
 The results suggest that the energyrange of IB overlaps with the CB bottom or VB top, which may be important tounderstand the strong s-d exchange interaction in (In,Fe)As[18,19].
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[466.0, 1, ',', 4],[357.0, 50, 'meV', 3],[283.0, 16, ',', 3],[172.0, 400.0, 'These', 2],[2.0, 18, ',', 0]

SrTiO3
###Temperature-Dependent Band Structure of SrTiO$_3$ Interfaces|Amany Raslan,Patrick Lafleur,W. A. Atkinson###
(1568852, 1568855)
Temperature-Dependent Band Structure of SrTiO3 Interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[191.0, 2, 'D', 3],[283.0, 3, 'D', 4],[297.0, 300, 'K', 4],[300.0, 10, 'K', 4],[386.0, 2, 'D', 5]

SrTiO3
###Temperature-Dependent Band Structure of SrTiO$_3$ Interfaces|Amany Raslan,Patrick Lafleur,W. A. Atkinson###
(1568911, 1568914)
 We build a theoretical model for the electronic properties of thetwo-dimensional (2D) electron gas that forms at the interface betweeninsulating SrTiO3 and a number of polar cap layers, including LaTiO3,LaAlO3, and GdTiO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 2, 'D', 2],[224.0, 3, 'D', 3],[238.0, 300, 'K', 3],[241.0, 10, 'K', 3],[327.0, 2, 'D', 4]

LaTiO3
###Temperature-Dependent Band Structure of SrTiO$_3$ Interfaces|Amany Raslan,Patrick Lafleur,W. A. Atkinson###
(1568933, 1568936)
 We build a theoretical model for the electronic properties of thetwo-dimensional (2D) electron gas that forms at the interface betweeninsulating SrTiO3 and a number of polar cap layers, including LaTiO3,LaAlO3, and GdTiO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 2, 'D', 2],[202.0, 3, 'D', 3],[216.0, 300, 'K', 3],[219.0, 10, 'K', 3],[305.0, 2, 'D', 4]

LaAlO3
###Temperature-Dependent Band Structure of SrTiO$_3$ Interfaces|Amany Raslan,Patrick Lafleur,W. A. Atkinson###
(1568940, 1568943)
 We build a theoretical model for the electronic properties of thetwo-dimensional (2D) electron gas that forms at the interface betweeninsulating SrTiO3 and a number of polar cap layers, including LaTiO3,LaAlO3, and GdTiO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 2, 'D', 2],[195.0, 3, 'D', 3],[209.0, 300, 'K', 3],[212.0, 10, 'K', 3],[298.0, 2, 'D', 4]

GdTiO3
###Temperature-Dependent Band Structure of SrTiO$_3$ Interfaces|Amany Raslan,Patrick Lafleur,W. A. Atkinson###
(1568948, 1568951)
 We build a theoretical model for the electronic properties of thetwo-dimensional (2D) electron gas that forms at the interface betweeninsulating SrTiO3 and a number of polar cap layers, including LaTiO3,LaAlO3, and GdTiO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 2, 'D', 2],[187.0, 3, 'D', 3],[201.0, 300, 'K', 3],[204.0, 10, 'K', 3],[290.0, 2, 'D', 4]

SrTiO3
###Temperature-Dependent Band Structure of SrTiO$_3$ Interfaces|Amany Raslan,Patrick Lafleur,W. A. Atkinson###
(1569098, 1569101)
 Theself-consistent band structure comprises a mix of quantum 2D states that aretightly bound to the interface, and quasi-three-dimensional (3D) states thatextend hundreds of unit cells into the SrTiO3 substrate.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 2, 'D', 0],[37.0, 3, 'D', 1],[51.0, 300, 'K', 1],[54.0, 10, 'K', 1],[140.0, 2, 'D', 2]

CuInSe2
###First-principles study on magnetic tunneling junctions with semiconducting CuInSe${}_{2}$ and CuGaSe${}_{2}$ barriers|Keisuke Masuda,Yoshio Miura###
(1569340, 1569343)
First-principles study on magnetic tunneling junctions with semiconducting CuInSe2 and CuGaSe2 barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CuGaSe2
###First-principles study on magnetic tunneling junctions with semiconducting CuInSe${}_{2}$ and CuGaSe${}_{2}$ barriers|Keisuke Masuda,Yoshio Miura###
(1569347, 1569350)
First-principles study on magnetic tunneling junctions with semiconducting CuInSe2 and CuGaSe2 barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CuInSe2
###First-principles study on magnetic tunneling junctions with semiconducting CuInSe${}_{2}$ and CuGaSe${}_{2}$ barriers|Keisuke Masuda,Yoshio Miura###
(1569385, 1569388)
 We theoretically investigate two different magnetic tunneling junctions(MTJs) with semiconductor barriers, CuInSe2 (CIS) and CuGaSe2(CG<missing VAR>S), which are the terminal compounds of recently reported mixedsemiconductor barrier, CuIn1-xGait x<missing VAR>Se2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(CIS)
###First-principles study on magnetic tunneling junctions with semiconducting CuInSe${}_{2}$ and CuGaSe${}_{2}$ barriers|Keisuke Masuda,Yoshio Miura###
(1569390, 1569394)
 We theoretically investigate two different magnetic tunneling junctions(MTJs) with semiconductor barriers, CuInSe2 (CIS) and CuGaSe2(CG<missing VAR>S), which are the terminal compounds of recently reported mixedsemiconductor barrier, CuIn1-xGait x<missing VAR>Se2.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CuGaSe2
###First-principles study on magnetic tunneling junctions with semiconducting CuInSe${}_{2}$ and CuGaSe${}_{2}$ barriers|Keisuke Masuda,Yoshio Miura###
(1569398, 1569401)
 We theoretically investigate two different magnetic tunneling junctions(MTJs) with semiconductor barriers, CuInSe2 (CIS) and CuGaSe2(CG<missing VAR>S), which are the terminal compounds of recently reported mixedsemiconductor barrier, CuIn1-xGait x<missing VAR>Se2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###First-principles study on magnetic tunneling junctions with semiconducting CuInSe${}_{2}$ and CuGaSe${}_{2}$ barriers|Keisuke Masuda,Yoshio Miura###
(1569405, 1569405)
 We theoretically investigate two different magnetic tunneling junctions(MTJs) with semiconductor barriers, CuInSe2 (CIS) and CuGaSe2(CG<missing VAR>S), which are the terminal compounds of recently reported mixedsemiconductor barrier, CuIn1-xGait x<missing VAR>Se2.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###First-principles study on magnetic tunneling junctions with semiconducting CuInSe${}_{2}$ and CuGaSe${}_{2}$ barriers|Keisuke Masuda,Yoshio Miura###
(1569407, 1569407)
 We theoretically investigate two different magnetic tunneling junctions(MTJs) with semiconductor barriers, CuInSe2 (CIS) and CuGaSe2(CG<missing VAR>S), which are the terminal compounds of recently reported mixedsemiconductor barrier, CuIn1-xGait x<missing VAR>Se2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CuIn1-xGa
###First-principles study on magnetic tunneling junctions with semiconducting CuInSe${}_{2}$ and CuGaSe${}_{2}$ barriers|Keisuke Masuda,Yoshio Miura###
(1569435, 1569440)
 We theoretically investigate two different magnetic tunneling junctions(MTJs) with semiconductor barriers, CuInSe2 (CIS) and CuGaSe2(CG<missing VAR>S), which are the terminal compounds of recently reported mixedsemiconductor barrier, CuIn1-xGait x<missing VAR>Se2.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

Se2
###First-principles study on magnetic tunneling junctions with semiconducting CuInSe${}_{2}$ and CuGaSe${}_{2}$ barriers|Keisuke Masuda,Yoshio Miura###
(1569444, 1569445)
 We theoretically investigate two different magnetic tunneling junctions(MTJs) with semiconductor barriers, CuInSe2 (CIS) and CuGaSe2(CG<missing VAR>S), which are the terminal compounds of recently reported mixedsemiconductor barrier, CuIn1-xGait x<missing VAR>Se2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CIS
###First-principles study on magnetic tunneling junctions with semiconducting CuInSe${}_{2}$ and CuGaSe${}_{2}$ barriers|Keisuke Masuda,Yoshio Miura###
(1569568, 1569570)
It is found that the Delta1 wave functions have dominant contributions tothe spin-dependent tunneling transport in both CIS- and CG<missing VAR>S-based MTJs.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###First-principles study on magnetic tunneling junctions with semiconducting CuInSe${}_{2}$ and CuGaSe${}_{2}$ barriers|Keisuke Masuda,Yoshio Miura###
(1569575, 1569575)
It is found that the Delta1 wave functions have dominant contributions tothe spin-dependent tunneling transport in both CIS- and CG<missing VAR>S-based MTJs.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###First-principles study on magnetic tunneling junctions with semiconducting CuInSe${}_{2}$ and CuGaSe${}_{2}$ barriers|Keisuke Masuda,Yoshio Miura###
(1569577, 1569577)
It is found that the Delta1 wave functions have dominant contributions tothe spin-dependent tunneling transport in both CIS- and CG<missing VAR>S-based MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###First-principles study on magnetic tunneling junctions with semiconducting CuInSe${}_{2}$ and CuGaSe${}_{2}$ barriers|Keisuke Masuda,Yoshio Miura###
(1569597, 1569597)
 We alsofind that the CG<missing VAR>S-based MTJ has a much larger MR ratio and slightly higher R<missing VAR>Athan those of the CIS-based MTJ, which indicates that a larger MR ratio isexpected for a higher Ga concentration x<missing VAR> in theCuIn1-xGax<missing VAR>Se2-based MTJs.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###First-principles study on magnetic tunneling junctions with semiconducting CuInSe${}_{2}$ and CuGaSe${}_{2}$ barriers|Keisuke Masuda,Yoshio Miura###
(1569599, 1569599)
 We alsofind that the CG<missing VAR>S-based MTJ has a much larger MR ratio and slightly higher R<missing VAR>Athan those of the CIS-based MTJ, which indicates that a larger MR ratio isexpected for a higher Ga concentration x<missing VAR> in theCuIn1-xGax<missing VAR>Se2-based MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CIS
###First-principles study on magnetic tunneling junctions with semiconducting CuInSe${}_{2}$ and CuGaSe${}_{2}$ barriers|Keisuke Masuda,Yoshio Miura###
(1569638, 1569640)
 We alsofind that the CG<missing VAR>S-based MTJ has a much larger MR ratio and slightly higher R<missing VAR>Athan those of the CIS-based MTJ, which indicates that a larger MR ratio isexpected for a higher Ga concentration x<missing VAR> in theCuIn1-xGax<missing VAR>Se2-based MTJs.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###First-principles study on magnetic tunneling junctions with semiconducting CuInSe${}_{2}$ and CuGaSe${}_{2}$ barriers|Keisuke Masuda,Yoshio Miura###
(1569675, 1569675)
 We alsofind that the CG<missing VAR>S-based MTJ has a much larger MR ratio and slightly higher R<missing VAR>Athan those of the CIS-based MTJ, which indicates that a larger MR ratio isexpected for a higher Ga concentration x<missing VAR> in theCuIn1-xGax<missing VAR>Se2-based MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CuIn1-xGa
###First-principles study on magnetic tunneling junctions with semiconducting CuInSe${}_{2}$ and CuGaSe${}_{2}$ barriers|Keisuke Masuda,Yoshio Miura###
(1569686, 1569691)
 We alsofind that the CG<missing VAR>S-based MTJ has a much larger MR ratio and slightly higher R<missing VAR>Athan those of the CIS-based MTJ, which indicates that a larger MR ratio isexpected for a higher Ga concentration x<missing VAR> in theCuIn1-xGax<missing VAR>Se2-based MTJs.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

Se2
###First-principles study on magnetic tunneling junctions with semiconducting CuInSe${}_{2}$ and CuGaSe${}_{2}$ barriers|Keisuke Masuda,Yoshio Miura###
(1569693, 1569694)
 We alsofind that the CG<missing VAR>S-based MTJ has a much larger MR ratio and slightly higher R<missing VAR>Athan those of the CIS-based MTJ, which indicates that a larger MR ratio isexpected for a higher Ga concentration x<missing VAR> in theCuIn1-xGax<missing VAR>Se2-based MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###First-principles study on magnetic tunneling junctions with semiconducting CuInSe${}_{2}$ and CuGaSe${}_{2}$ barriers|Keisuke Masuda,Yoshio Miura###
(1569750, 1569750)
 We further study therelationship between the band gaps in the barriers and MR ratios by changingthe Coulomb repulsions in the Cu 3d<missing VAR> states of the CIS and CG<missing VAR>S.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CIS
###First-principles study on magnetic tunneling junctions with semiconducting CuInSe${}_{2}$ and CuGaSe${}_{2}$ barriers|Keisuke Masuda,Yoshio Miura###
(1569761, 1569763)
 We further study therelationship between the band gaps in the barriers and MR ratios by changingthe Coulomb repulsions in the Cu 3d<missing VAR> states of the CIS and CG<missing VAR>S.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###First-principles study on magnetic tunneling junctions with semiconducting CuInSe${}_{2}$ and CuGaSe${}_{2}$ barriers|Keisuke Masuda,Yoshio Miura###
(1569767, 1569767)
 We further study therelationship between the band gaps in the barriers and MR ratios by changingthe Coulomb repulsions in the Cu 3d<missing VAR> states of the CIS and CG<missing VAR>S.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###First-principles study on magnetic tunneling junctions with semiconducting CuInSe${}_{2}$ and CuGaSe${}_{2}$ barriers|Keisuke Masuda,Yoshio Miura###
(1569769, 1569769)
 We further study therelationship between the band gaps in the barriers and MR ratios by changingthe Coulomb repulsions in the Cu 3d<missing VAR> states of the CIS and CG<missing VAR>S.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CIS
###First-principles study on magnetic tunneling junctions with semiconducting CuInSe${}_{2}$ and CuGaSe${}_{2}$ barriers|Keisuke Masuda,Yoshio Miura###
(1569828, 1569830)
 Thecomparison of MR ratios and R<missing VAR>A between the CIS-, CG<missing VAR>S-, and MgO-based MTJs arealso given.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###First-principles study on magnetic tunneling junctions with semiconducting CuInSe${}_{2}$ and CuGaSe${}_{2}$ barriers|Keisuke Masuda,Yoshio Miura###
(1569834, 1569834)
 Thecomparison of MR ratios and R<missing VAR>A between the CIS-, CG<missing VAR>S-, and MgO-based MTJs arealso given.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###First-principles study on magnetic tunneling junctions with semiconducting CuInSe${}_{2}$ and CuGaSe${}_{2}$ barriers|Keisuke Masuda,Yoshio Miura###
(1569836, 1569836)
 Thecomparison of MR ratios and R<missing VAR>A between the CIS-, CG<missing VAR>S-, and MgO-based MTJs arealso given.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###First-principles study on magnetic tunneling junctions with semiconducting CuInSe${}_{2}$ and CuGaSe${}_{2}$ barriers|Keisuke Masuda,Yoshio Miura###
(1569842, 1569843)
 Thecomparison of MR ratios and R<missing VAR>A between the CIS-, CG<missing VAR>S-, and MgO-based MTJs arealso given.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaSbTe
###Magnetotransport properties and evidence of topological insulating state in LaSbTe|Ratnadwip Singha,Arnab Pariari,Biswarup Satpati,Prabhat Mandal###
(1569885, 1569887)
Magnetotransport properties and evidence of topological insulating state in LaSbTe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 5, 'K', 4],[125.0, 9, 'T', 4]

In
###Magnetotransport properties and evidence of topological insulating state in LaSbTe|Ratnadwip Singha,Arnab Pariari,Biswarup Satpati,Prabhat Mandal###
(1569890, 1569890)
 In this report, we present the magnetotransport and magnetization propertiesof LaSbTe single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 5, 'K', 3],[122.0, 9, 'T', 3]

LaSbTe
###Magnetotransport properties and evidence of topological insulating state in LaSbTe|Ratnadwip Singha,Arnab Pariari,Biswarup Satpati,Prabhat Mandal###
(1569914, 1569916)
 In this report, we present the magnetotransport and magnetization propertiesof LaSbTe single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 5, 'K', 3],[96.0, 9, 'T', 3]

At
###Magnetotransport properties and evidence of topological insulating state in LaSbTe|Ratnadwip Singha,Arnab Pariari,Biswarup Satpati,Prabhat Mandal###
(1570008, 1570008)
 At 5 K and 9 T, a large, non-saturating transversemagnetoresistance (MR) sim 5times103 % has been obtained.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[1.0, 5, 'K', 0],[4.0, 9, 'T', 0]

LaSbTe
###Magnetotransport properties and evidence of topological insulating state in LaSbTe|Ratnadwip Singha,Arnab Pariari,Biswarup Satpati,Prabhat Mandal###
(1570258, 1570260)
 From themagnetization measurement, the signature of non-trivial surface state has beendetected, which confirms that LaSbTe is a topological insulator, consistentwith the earlier first-principles calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[249.0, 5, 'K', 5],[246.0, 9, 'T', 5]

SI
###Spin-polarized quantum transport properties through flexible phosphorene|Mingyan Chen,Zhizhou Yu,Yiqun Xie,Yin Wang###
(1570348, 1570349)
 We report a first-principles study on the tunnel magnetoresistance (TMR) andspin-injection efficiency (SIE) through phosphorene with nickel electrodesunder the mechanical tension and bending on the phosphorene region.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 0, 'to', 2],[85.0, 15, '%', 2],[135.0, 107, '%', 2],[144.0, 10, '%', 2],[163.0, 8, '%', 2],[170.0, 43, '%', 2],[212.0, 7, '%', 3],[217.0, 50, '%', 3],[232.0, -3.9, '%', 3],[258.0, 70, '%', 3],[271.0, 30, '%', 3]

SI
###Spin-polarized quantum transport properties through flexible phosphorene|Mingyan Chen,Zhizhou Yu,Yiqun Xie,Yin Wang###
(1570396, 1570397)
 Both theTMR and SIE<missing VAR> are largely improved under these mechanical deformations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 0, 'to', 1],[37.0, 15, '%', 1],[87.0, 107, '%', 1],[96.0, 10, '%', 1],[115.0, 8, '%', 1],[122.0, 43, '%', 1],[164.0, 7, '%', 2],[169.0, 50, '%', 2],[184.0, -3.9, '%', 2],[210.0, 70, '%', 2],[223.0, 30, '%', 2]

SI
###Spin-polarized quantum transport properties through flexible phosphorene|Mingyan Chen,Zhizhou Yu,Yiqun Xie,Yin Wang###
(1570501, 1570502)
 For theuniaxial tension (varepsilony) varying from 0 to 15% applied along thearmchair transport (it y<missing VAR>-)direction of the phosphorene, the TMR ratio isenhanced with a maximum of 107% at the varepsilony<missing VAR>10%, while the SIE<missing VAR>increases monotonously from 8% up to 43% with the increasing of the strain.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 0, 'to', 0],[67.0, 15, '%', 0],[17.0, 107, '%', 0],[8.0, 10, '%', 0],[10.0, 8, '%', 0],[17.0, 43, '%', 0],[59.0, 7, '%', 1],[64.0, 50, '%', 1],[79.0, -3.9, '%', 1],[105.0, 70, '%', 1],[118.0, 30, '%', 1]

SI
###Spin-polarized quantum transport properties through flexible phosphorene|Mingyan Chen,Zhizhou Yu,Yiqun Xie,Yin Wang###
(1570592, 1570593)
Under the out-of-plane bending, the TMR overall increases from 7% to 50%within the bending ratio of 0-3.9%, and meanwhile the SIE<missing VAR> is largely improvedto around 70%, as compared to that (30%) of the flat phosphorene.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 0, 'to', 1],[158.0, 15, '%', 1],[108.0, 107, '%', 1],[99.0, 10, '%', 1],[80.0, 8, '%', 1],[73.0, 43, '%', 1],[31.0, 7, '%', 0],[26.0, 50, '%', 0],[11.0, -3.9, '%', 0],[14.0, 70, '%', 0],[27.0, 30, '%', 0]

SI
###Spin-polarized quantum transport properties through flexible phosphorene|Mingyan Chen,Zhizhou Yu,Yiqun Xie,Yin Wang###
(1570648, 1570649)
 Suchbehaviors of the TMR and SIE<missing VAR> are mainly affected by the transmission of spin-upelectrons in the parallel configuration, which is highly depended on theapplied mechanical tension and bending.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[216.0, 0, 'to', 2],[214.0, 15, '%', 2],[164.0, 107, '%', 2],[155.0, 10, '%', 2],[136.0, 8, '%', 2],[129.0, 43, '%', 2],[87.0, 7, '%', 1],[82.0, 50, '%', 1],[67.0, -3.9, '%', 1],[41.0, 70, '%', 1],[28.0, 30, '%', 1]

In
###Notes on Anomaly Induced Transport|Karl Landsteiner###
(1570792, 1570792)
 In these notes I review the theory from aquantum field theoretic, hydrodynamic and holographic perspective.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Notes on Anomaly Induced Transport|Karl Landsteiner###
(1570798, 1570798)
 In these notes I review the theory from aquantum field theoretic, hydrodynamic and holographic perspective.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Notes on Anomaly Induced Transport|Karl Landsteiner###
(1570870, 1570870)
 Vanishing of the CME in strict equilibriumwill be connected to the boundary conditions in momentum space imposed by theregularization.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Notes on Anomaly Induced Transport|Karl Landsteiner###
(1571078, 1571078)
 Finally Ibriefly review a holographic model of Weyl semimetal which allows to infer anew phenomenon related to the gravitational anomaly the presence of oddviscosity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(CNF)
###A conducting nano-filament (CNF) network as a precursor to the origin of superconductivity in electron-doped copper oxides|Heshan Yu,Ge He,Ziquan Lin,Anna Kusmartseva,Jie Yua,Beiyi Zhu,Yi-feng Yang,Tao Xiang,Liang Li,Junfeng Wang,F. V. Kusmartsev,Kui Jin###
(1571150, 1571154)
A conducting nano-filament (CNF) network as a precursor to the origin of superconductivity in electron-doped copper oxides.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[224.0, 58, 'Tesla', 4]

In
###A conducting nano-filament (CNF) network as a precursor to the origin of superconductivity in electron-doped copper oxides|Heshan Yu,Ge He,Ziquan Lin,Anna Kusmartseva,Jie Yua,Beiyi Zhu,Yi-feng Yang,Tao Xiang,Liang Li,Junfeng Wang,F. V. Kusmartsev,Kui Jin###
(1571217, 1571217)
 In copper-oxidesuperconductors, spin fluctuations play a predominant role in electron pairingwith electron dopants yet composite orders veil the nature of superconductivityfor hole-doped family.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 58, 'Tesla', 2]

F
###A conducting nano-filament (CNF) network as a precursor to the origin of superconductivity in electron-doped copper oxides|Heshan Yu,Ge He,Ziquan Lin,Anna Kusmartseva,Jie Yua,Beiyi Zhu,Yi-feng Yang,Tao Xiang,Liang Li,Junfeng Wang,F. V. Kusmartsev,Kui Jin###
(1571301, 1571301)
 However, in electron-doped copper oxide superconductors(cuprates) the AFM<missing VAR> critical end point is still in controversy for differentprobes, demonstrating high sensitivity to oxygen content.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 58, 'Tesla', 1]

CCO
###A conducting nano-filament (CNF) network as a precursor to the origin of superconductivity in electron-doped copper oxides|Heshan Yu,Ge He,Ziquan Lin,Anna Kusmartseva,Jie Yua,Beiyi Zhu,Yi-feng Yang,Tao Xiang,Liang Li,Junfeng Wang,F. V. Kusmartsev,Kui Jin###
(1571383, 1571385)
 Here, by carefullytuning the oxygen content, a systematic study of the Hall signal andmagnetoresistivity up to 58 Tesla on L<missing VAR>CCO thin films identifies twocharacteristic temperatures.
Featurization terminated normally.
0,0,0,0,0,0.6666666666666666,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 58, 'Tesla', 0]

F
###A conducting nano-filament (CNF) network as a precursor to the origin of superconductivity in electron-doped copper oxides|Heshan Yu,Ge He,Ziquan Lin,Anna Kusmartseva,Jie Yua,Beiyi Zhu,Yi-feng Yang,Tao Xiang,Liang Li,Junfeng Wang,F. V. Kusmartsev,Kui Jin###
(1571451, 1571451)
 The former is quite robust, whereas the latterbecomes flexible with increasing magnetic field, thereby linking respectivelyto two- and three-dimensional AFM<missing VAR>, evident from the multidimensional phasediagram as a function of oxygen and Ce dopants.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 58, 'Tesla', 1]

Ce
###A conducting nano-filament (CNF) network as a precursor to the origin of superconductivity in electron-doped copper oxides|Heshan Yu,Ge He,Ziquan Lin,Anna Kusmartseva,Jie Yua,Beiyi Zhu,Yi-feng Yang,Tao Xiang,Liang Li,Junfeng Wang,F. V. Kusmartsev,Kui Jin###
(1571480, 1571480)
 The former is quite robust, whereas the latterbecomes flexible with increasing magnetic field, thereby linking respectivelyto two- and three-dimensional AFM<missing VAR>, evident from the multidimensional phasediagram as a function of oxygen and Ce dopants.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 58, 'Tesla', 1]

F
###A conducting nano-filament (CNF) network as a precursor to the origin of superconductivity in electron-doped copper oxides|Heshan Yu,Ge He,Ziquan Lin,Anna Kusmartseva,Jie Yua,Beiyi Zhu,Yi-feng Yang,Tao Xiang,Liang Li,Junfeng Wang,F. V. Kusmartsev,Kui Jin###
(1571567, 1571567)
The new findings provide a uniquely consistent alternative picture inunderstanding the interactions between AFM<missing VAR> and superconductivity inelectron-doped cuprates and offer a consolidating interpretation to thepioneering scaling law in cuprates recently established by Bozovic et al.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[189.0, 58, 'Tesla', 3]

V5S8
###Thickness-Dependent and Magnetic-Field-Driven Suppression of Antiferromagnetic Order in Thin V$_{5}$S$_{8}$ Single Crystals|Will J. Hardy,Jiangtan Yuan,Hua Guo,Panpan Zhou,Jun Lou,Douglas Natelson###
(1571661, 1571664)
Thickness-Dependent and Magnetic-Field-Driven Suppression of Antiferromagnetic Order in Thin V5S8 Single Crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6153846153846154,0,0,0,0,0,0,0.38461538461538464,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 2, 'd', 1],[116.0, 32, 'K', 2],[149.0, 4.2, 'T', 2],[378.0, 2, 'd', 5]

V5S8
###Thickness-Dependent and Magnetic-Field-Driven Suppression of Antiferromagnetic Order in Thin V$_{5}$S$_{8}$ Single Crystals|Will J. Hardy,Jiangtan Yuan,Hua Guo,Panpan Zhou,Jun Lou,Douglas Natelson###
(1571746, 1571749)
 One such material is V5S8, a metal with anantiferromagnetic ground state below the Neel temperature T<missing VAR>N sim 32 Kand a prominent spin-flop signature in the magnetoresistance (MR) when Hc<missing VAR>sim 4.2 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6153846153846154,0,0,0,0,0,0,0.38461538461538464,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 2, 'd', 1],[31.0, 32, 'K', 0],[64.0, 4.2, 'T', 0],[293.0, 2, 'd', 3]

N
###Thickness-Dependent and Magnetic-Field-Driven Suppression of Antiferromagnetic Order in Thin V$_{5}$S$_{8}$ Single Crystals|Will J. Hardy,Jiangtan Yuan,Hua Guo,Panpan Zhou,Jun Lou,Douglas Natelson###
(1571771, 1571771)
 One such material is V5S8, a metal with anantiferromagnetic ground state below the Neel temperature T<missing VAR>N sim 32 Kand a prominent spin-flop signature in the magnetoresistance (MR) when Hc<missing VAR>sim 4.2 T.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 2, 'd', 1],[9.0, 32, 'K', 0],[42.0, 4.2, 'T', 0],[271.0, 2, 'd', 3]

N
###Thickness-Dependent and Magnetic-Field-Driven Suppression of Antiferromagnetic Order in Thin V$_{5}$S$_{8}$ Single Crystals|Will J. Hardy,Jiangtan Yuan,Hua Guo,Panpan Zhou,Jun Lou,Douglas Natelson###
(1571777, 1571777)
 One such material is V5S8, a metal with anantiferromagnetic ground state below the Neel temperature T<missing VAR>N sim 32 Kand a prominent spin-flop signature in the magnetoresistance (MR) when Hc<missing VAR>sim 4.2 T.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 2, 'd', 1],[3.0, 32, 'K', 0],[36.0, 4.2, 'T', 0],[265.0, 2, 'd', 3]

H
###Thickness-Dependent and Magnetic-Field-Driven Suppression of Antiferromagnetic Order in Thin V$_{5}$S$_{8}$ Single Crystals|Will J. Hardy,Jiangtan Yuan,Hua Guo,Panpan Zhou,Jun Lou,Douglas Natelson###
(1571808, 1571808)
 One such material is V5S8, a metal with anantiferromagnetic ground state below the Neel temperature T<missing VAR>N sim 32 Kand a prominent spin-flop signature in the magnetoresistance (MR) when Hc<missing VAR>sim 4.2 T.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 2, 'd', 1],[28.0, 32, 'K', 0],[5.0, 4.2, 'T', 0],[234.0, 2, 'd', 3]

V5S8
###Thickness-Dependent and Magnetic-Field-Driven Suppression of Antiferromagnetic Order in Thin V$_{5}$S$_{8}$ Single Crystals|Will J. Hardy,Jiangtan Yuan,Hua Guo,Panpan Zhou,Jun Lou,Douglas Natelson###
(1571833, 1571836)
 Here we study nanoscale-thickness single crystals ofV5S8, focusing on temperatures close to T<missing VAR>N and the evolution ofmaterial properties in response to systematic reduction in crystal thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6153846153846154,0,0,0,0,0,0,0.38461538461538464,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 2, 'd', 2],[53.0, 32, 'K', 1],[20.0, 4.2, 'T', 1],[206.0, 2, 'd', 2]

N
###Thickness-Dependent and Magnetic-Field-Driven Suppression of Antiferromagnetic Order in Thin V$_{5}$S$_{8}$ Single Crystals|Will J. Hardy,Jiangtan Yuan,Hua Guo,Panpan Zhou,Jun Lou,Douglas Natelson###
(1571850, 1571850)
 Here we study nanoscale-thickness single crystals ofV5S8, focusing on temperatures close to T<missing VAR>N and the evolution ofmaterial properties in response to systematic reduction in crystal thickness.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[172.0, 2, 'd', 2],[70.0, 32, 'K', 1],[37.0, 4.2, 'T', 1],[192.0, 2, 'd', 2]

N
###Thickness-Dependent and Magnetic-Field-Driven Suppression of Antiferromagnetic Order in Thin V$_{5}$S$_{8}$ Single Crystals|Will J. Hardy,Jiangtan Yuan,Hua Guo,Panpan Zhou,Jun Lou,Douglas Natelson###
(1571892, 1571892)
Transport measurements just below T<missing VAR>N reveal magnetic hysteresis that weascribe to a metamagnetic transition, the first-order magnetic field-drivenbreakdown of the ordered state.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[214.0, 2, 'd', 3],[112.0, 32, 'K', 2],[79.0, 4.2, 'T', 2],[150.0, 2, 'd', 1]

N
###Thickness-Dependent and Magnetic-Field-Driven Suppression of Antiferromagnetic Order in Thin V$_{5}$S$_{8}$ Single Crystals|Will J. Hardy,Jiangtan Yuan,Hua Guo,Panpan Zhou,Jun Lou,Douglas Natelson###
(1571976, 1571976)
 The reduction of crystal thickness to sim 10nm coincides with systematic changes in the magnetic response T<missing VAR>N falls,implying that antiferromagnetism is suppressed; and while the spin-flopsignature remains, the hysteresis disappears, implying that the metamagnetictransition becomes second order as the thickness approaches the 2d limit.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[298.0, 2, 'd', 4],[196.0, 32, 'K', 3],[163.0, 4.2, 'T', 3],[66.0, 2, 'd', 0]

In
###Electric control of antiferromagnets|I. Fina,X. Marti###
(1572122, 1572122)
 In the past five years, most of the paradigmatic concepts employed inspintronics have been replicated substituting ferromagnets by antiferromagnetsin critical parts of the devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Electric control of antiferromagnets|I. Fina,X. Marti###
(1572236, 1572236)
 In this paper, we focus on the electrical control and detection ofantiferromagnetic moments at a constant temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

USB
###Electric control of antiferromagnets|I. Fina,X. Marti###
(1572429, 1572431)
 We present resultsobtained with the first USB-operated portable device able to perform thenon-volatile electrical current-induced switching of an antiferromagnetcombined with magnetoresistive readout at room temperature.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoAs2
###Magnetoresistance and robust resistivity plateau in MoAs2|Jialu Wang,Lin Li,Wei You,Tingting Wang,Chao Cao,Jianhui Dai,Yuke Li###
(1572531, 1572533)
Magnetoresistance and robust resistivity plateau in MoAs2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 5, 'T', 2],[120.0, 18, 'K', 3],[136.0, 9, 'T', 3],[158.0, 2600, '%', 4],[162.0, 2, 'K', 4],[165.0, 9, 'T', 4],[199.0, 40, 'K', 5],[245.0, 70, 'K', 6],[339.0, 30, 'K', 8]

MoAs2
###Magnetoresistance and robust resistivity plateau in MoAs2|Jialu Wang,Lin Li,Wei You,Tingting Wang,Chao Cao,Jianhui Dai,Yuke Li###
(1572544, 1572546)
 We have grown the MoAs2 single crystal which crystallizes in a monoclinicstructure with C2/m<missing VAR> space group.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 5, 'T', 1],[107.0, 18, 'K', 2],[123.0, 9, 'T', 2],[145.0, 2600, '%', 3],[149.0, 2, 'K', 3],[152.0, 9, 'T', 3],[186.0, 40, 'K', 4],[232.0, 70, 'K', 5],[326.0, 30, 'K', 7]

C2
###Magnetoresistance and robust resistivity plateau in MoAs2|Jialu Wang,Lin Li,Wei You,Tingting Wang,Chao Cao,Jianhui Dai,Yuke Li###
(1572567, 1572568)
 We have grown the MoAs2 single crystal which crystallizes in a monoclinicstructure with C2/m<missing VAR> space group.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 5, 'T', 1],[85.0, 18, 'K', 2],[101.0, 9, 'T', 2],[123.0, 2600, '%', 3],[127.0, 2, 'K', 3],[130.0, 9, 'T', 3],[164.0, 40, 'K', 4],[210.0, 70, 'K', 5],[304.0, 30, 'K', 7]

MoAs2
###Magnetoresistance and robust resistivity plateau in MoAs2|Jialu Wang,Lin Li,Wei You,Tingting Wang,Chao Cao,Jianhui Dai,Yuke Li###
(1572585, 1572587)
 Transport measurements show that MoAs2displays a metallic behavior at zero field and undergoes ametal-to-semiconductor crossover at low temperatures when the applied magneticfield is over 5 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 5, 'T', 0],[66.0, 18, 'K', 1],[82.0, 9, 'T', 1],[104.0, 2600, '%', 2],[108.0, 2, 'K', 2],[111.0, 9, 'T', 2],[145.0, 40, 'K', 3],[191.0, 70, 'K', 4],[285.0, 30, 'K', 6]

K
###Magnetoresistance and robust resistivity plateau in MoAs2|Jialu Wang,Lin Li,Wei You,Tingting Wang,Chao Cao,Jianhui Dai,Yuke Li###
(1572879, 1572879)
 A combination ofthe breakdown of Kohlers<missing VAR> rule, the abnormal drop and the cross point in Halldata implies that a possible Lifshitz transition has occurred between 30 K and60 K, likely driving the compensated electron-hole density, the large MR aswell as the metal-semiconductor transition in MoAs2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[240.0, 5, 'T', 6],[226.0, 18, 'K', 5],[210.0, 9, 'T', 5],[188.0, 2600, '%', 4],[184.0, 2, 'K', 4],[181.0, 9, 'T', 4],[147.0, 40, 'K', 3],[101.0, 70, 'K', 2],[7.0, 30, 'K', 0]

MoAs2
###Magnetoresistance and robust resistivity plateau in MoAs2|Jialu Wang,Lin Li,Wei You,Tingting Wang,Chao Cao,Jianhui Dai,Yuke Li###
(1572921, 1572923)
 A combination ofthe breakdown of Kohlers<missing VAR> rule, the abnormal drop and the cross point in Halldata implies that a possible Lifshitz transition has occurred between 30 K and60 K, likely driving the compensated electron-hole density, the large MR aswell as the metal-semiconductor transition in MoAs2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[282.0, 5, 'T', 6],[268.0, 18, 'K', 5],[252.0, 9, 'T', 5],[230.0, 2600, '%', 4],[226.0, 2, 'K', 4],[223.0, 9, 'T', 4],[189.0, 40, 'K', 3],[143.0, 70, 'K', 2],[49.0, 30, 'K', 0]

In
###Interplay of orbital effects and nanoscale strain in topological crystalline insulators|Daniel Walkup,Badih Assaf,Kane L Scipioni,R. Sankar,Fangcheng Chou,Guoqing Chang,Hsin Lin,Ilija Zeljkovic,Vidya Madhavan###
(1573045, 1573045)
 In addition to influencing bandwidths, gaps,correlation strength and dispersion, orbital effects have also been implicatedin generating novel electronic and structural phases, such as Jahn-Tellereffect and colossal magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Interplay of orbital effects and nanoscale strain in topological crystalline insulators|Daniel Walkup,Badih Assaf,Kane L Scipioni,R. Sankar,Fangcheng Chou,Guoqing Chang,Hsin Lin,Ilija Zeljkovic,Vidya Madhavan###
(1573115, 1573115)
 In this work, we show for the first timehow the orbital nature of bands can result in non-trivial effects of strain onthe band structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SnTe
###Interplay of orbital effects and nanoscale strain in topological crystalline insulators|Daniel Walkup,Badih Assaf,Kane L Scipioni,R. Sankar,Fangcheng Chou,Guoqing Chang,Hsin Lin,Ilija Zeljkovic,Vidya Madhavan###
(1573234, 1573235)
 We use scanning tunneling microscopy and quasiparticleinterference imaging to study the effects of strain on the electronic structureof a heteroepitaxial thin film of a topological crystalline insulator, SnTe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ca
###Magneto-transport properties of the "hydrogen atom" nodal-line semimetal candidates CaTX (T=Ag, Cd, X=As, Ge)|Eve Emmanouilidou,Bing Shen,Xiaoyu Deng,Tay-Rong Chang,Aoshuang Shi,Gabriel Kotliar,Su-Yang Xu,Ni Ni###
(1573403, 1573403)
Magneto-transport properties of the hydrogen atom nodal-line semimetal candidates CaTX (T<missing VAR>Ag, Cd, X<missing VAR>As, Ge).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[352.0, 100, 'times', 7]

Ag
###Magneto-transport properties of the "hydrogen atom" nodal-line semimetal candidates CaTX (T=Ag, Cd, X=As, Ge)|Eve Emmanouilidou,Bing Shen,Xiaoyu Deng,Tay-Rong Chang,Aoshuang Shi,Gabriel Kotliar,Su-Yang Xu,Ni Ni###
(1573409, 1573409)
Magneto-transport properties of the hydrogen atom nodal-line semimetal candidates CaTX (T<missing VAR>Ag, Cd, X<missing VAR>As, Ge).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[346.0, 100, 'times', 7]

Cd
###Magneto-transport properties of the "hydrogen atom" nodal-line semimetal candidates CaTX (T=Ag, Cd, X=As, Ge)|Eve Emmanouilidou,Bing Shen,Xiaoyu Deng,Tay-Rong Chang,Aoshuang Shi,Gabriel Kotliar,Su-Yang Xu,Ni Ni###
(1573412, 1573412)
Magneto-transport properties of the hydrogen atom nodal-line semimetal candidates CaTX (T<missing VAR>Ag, Cd, X<missing VAR>As, Ge).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[343.0, 100, 'times', 7]

As
###Magneto-transport properties of the "hydrogen atom" nodal-line semimetal candidates CaTX (T=Ag, Cd, X=As, Ge)|Eve Emmanouilidou,Bing Shen,Xiaoyu Deng,Tay-Rong Chang,Aoshuang Shi,Gabriel Kotliar,Su-Yang Xu,Ni Ni###
(1573416, 1573416)
Magneto-transport properties of the hydrogen atom nodal-line semimetal candidates CaTX (T<missing VAR>Ag, Cd, X<missing VAR>As, Ge).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[339.0, 100, 'times', 7]

Ge
###Magneto-transport properties of the "hydrogen atom" nodal-line semimetal candidates CaTX (T=Ag, Cd, X=As, Ge)|Eve Emmanouilidou,Bing Shen,Xiaoyu Deng,Tay-Rong Chang,Aoshuang Shi,Gabriel Kotliar,Su-Yang Xu,Ni Ni###
(1573419, 1573419)
Magneto-transport properties of the hydrogen atom nodal-line semimetal candidates CaTX (T<missing VAR>Ag, Cd, X<missing VAR>As, Ge).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[336.0, 100, 'times', 7]

In
###Magneto-transport properties of the "hydrogen atom" nodal-line semimetal candidates CaTX (T=Ag, Cd, X=As, Ge)|Eve Emmanouilidou,Bing Shen,Xiaoyu Deng,Tay-Rong Chang,Aoshuang Shi,Gabriel Kotliar,Su-Yang Xu,Ni Ni###
(1573561, 1573561)
 In this paper, we report the magneto-transport properties of twonodal-line semimetal candidates CaAgAs and CaCdGe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[194.0, 100, 'times', 3]

CaAgAs
###Magneto-transport properties of the "hydrogen atom" nodal-line semimetal candidates CaTX (T=Ag, Cd, X=As, Ge)|Eve Emmanouilidou,Bing Shen,Xiaoyu Deng,Tay-Rong Chang,Aoshuang Shi,Gabriel Kotliar,Su-Yang Xu,Ni Ni###
(1573593, 1573595)
 In this paper, we report the magneto-transport properties of twonodal-line semimetal candidates CaAgAs and CaCdGe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 100, 'times', 3]

CaCdGe
###Magneto-transport properties of the "hydrogen atom" nodal-line semimetal candidates CaTX (T=Ag, Cd, X=As, Ge)|Eve Emmanouilidou,Bing Shen,Xiaoyu Deng,Tay-Rong Chang,Aoshuang Shi,Gabriel Kotliar,Su-Yang Xu,Ni Ni###
(1573599, 1573601)
 In this paper, we report the magneto-transport properties of twonodal-line semimetal candidates CaAgAs and CaCdGe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 100, 'times', 3]

CaAgAs
###Magneto-transport properties of the "hydrogen atom" nodal-line semimetal candidates CaTX (T=Ag, Cd, X=As, Ge)|Eve Emmanouilidou,Bing Shen,Xiaoyu Deng,Tay-Rong Chang,Aoshuang Shi,Gabriel Kotliar,Su-Yang Xu,Ni Ni###
(1573614, 1573616)
 First, our singlecrystalline CaAgAs supports the first hydrogen atom nodal-line semimetal,where only the topological nodal-line is present at the Fermi level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 100, 'times', 2]

CaCdGe
###Magneto-transport properties of the "hydrogen atom" nodal-line semimetal candidates CaTX (T=Ag, Cd, X=As, Ge)|Eve Emmanouilidou,Bing Shen,Xiaoyu Deng,Tay-Rong Chang,Aoshuang Shi,Gabriel Kotliar,Su-Yang Xu,Ni Ni###
(1573667, 1573669)
 Second,our CaCdGe sample provides an ideal platform to perform comparative studiesbecause it features the same topological nodal line but has a more complicatedFermiology with irrelevant Fermi pockets.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 100, 'times', 1]

As
###Magneto-transport properties of the "hydrogen atom" nodal-line semimetal candidates CaTX (T=Ag, Cd, X=As, Ge)|Eve Emmanouilidou,Bing Shen,Xiaoyu Deng,Tay-Rong Chang,Aoshuang Shi,Gabriel Kotliar,Su-Yang Xu,Ni Ni###
(1573728, 1573728)
 As a result, the magnetoresistance ofour CaCdGe sample is more than 100 times larger than that of CaAgAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 100, 'times', 0]

CaCdGe
###Magneto-transport properties of the "hydrogen atom" nodal-line semimetal candidates CaTX (T=Ag, Cd, X=As, Ge)|Eve Emmanouilidou,Bing Shen,Xiaoyu Deng,Tay-Rong Chang,Aoshuang Shi,Gabriel Kotliar,Su-Yang Xu,Ni Ni###
(1573744, 1573746)
 As a result, the magnetoresistance ofour CaCdGe sample is more than 100 times larger than that of CaAgAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 100, 'times', 0]

CaAgAs
###Magneto-transport properties of the "hydrogen atom" nodal-line semimetal candidates CaTX (T=Ag, Cd, X=As, Ge)|Eve Emmanouilidou,Bing Shen,Xiaoyu Deng,Tay-Rong Chang,Aoshuang Shi,Gabriel Kotliar,Su-Yang Xu,Ni Ni###
(1573765, 1573767)
 As a result, the magnetoresistance ofour CaCdGe sample is more than 100 times larger than that of CaAgAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 100, 'times', 0]

Ca
###Magneto-transport properties of the "hydrogen atom" nodal-line semimetal candidates CaTX (T=Ag, Cd, X=As, Ge)|Eve Emmanouilidou,Bing Shen,Xiaoyu Deng,Tay-Rong Chang,Aoshuang Shi,Gabriel Kotliar,Su-Yang Xu,Ni Ni###
(1573803, 1573803)
 Throughour systematic magneto-transport and first-principles band structurecalculations, we show that our CaTX compounds can be used to study, isolate,and control the novel topological nodal-line physics in real materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 100, 'times', 1]

B
###Semimetallic and charge-ordered $α$-(BEDT-TTF)$_2$I$_3$: on the role of disorder in dc transport and dielectric properties|Tomislav Ivek,Matija Čulo,Marko Kuveždić,Eduard Tutiš,Mario Basletić,Branimir Mihaljević,Emil Tafra,Silvia Tomić,Anja Löhle,Martin Dressel,Dieter Schweitzer,Bojana Korin-Hamzić###
(1573865, 1573865)
Semimetallic and charge-ordered -(BEDT-TTF)2I3 on the role of disorder in dc transport and dielectric properties.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Semimetallic and charge-ordered $α$-(BEDT-TTF)$_2$I$_3$: on the role of disorder in dc transport and dielectric properties|Tomislav Ivek,Matija Čulo,Marko Kuveždić,Eduard Tutiš,Mario Basletić,Branimir Mihaljević,Emil Tafra,Silvia Tomić,Anja Löhle,Martin Dressel,Dieter Schweitzer,Bojana Korin-Hamzić###
(1573872, 1573872)
Semimetallic and charge-ordered -(BEDT-TTF)2I3 on the role of disorder in dc transport and dielectric properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I3
###Semimetallic and charge-ordered $α$-(BEDT-TTF)$_2$I$_3$: on the role of disorder in dc transport and dielectric properties|Tomislav Ivek,Matija Čulo,Marko Kuveždić,Eduard Tutiš,Mario Basletić,Branimir Mihaljević,Emil Tafra,Silvia Tomić,Anja Löhle,Martin Dressel,Dieter Schweitzer,Bojana Korin-Hamzić###
(1573875, 1573876)
Semimetallic and charge-ordered -(BEDT-TTF)2I3 on the role of disorder in dc transport and dielectric properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Semimetallic and charge-ordered $α$-(BEDT-TTF)$_2$I$_3$: on the role of disorder in dc transport and dielectric properties|Tomislav Ivek,Matija Čulo,Marko Kuveždić,Eduard Tutiš,Mario Basletić,Branimir Mihaljević,Emil Tafra,Silvia Tomić,Anja Löhle,Martin Dressel,Dieter Schweitzer,Bojana Korin-Hamzić###
(1573904, 1573904)
 alpha-(BEDT-TTF)2I3 is a prominent example of charge ordering amongorganic conductors.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Semimetallic and charge-ordered $α$-(BEDT-TTF)$_2$I$_3$: on the role of disorder in dc transport and dielectric properties|Tomislav Ivek,Matija Čulo,Marko Kuveždić,Eduard Tutiš,Mario Basletić,Branimir Mihaljević,Emil Tafra,Silvia Tomić,Anja Löhle,Martin Dressel,Dieter Schweitzer,Bojana Korin-Hamzić###
(1573911, 1573911)
 alpha-(BEDT-TTF)2I3 is a prominent example of charge ordering amongorganic conductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I3
###Semimetallic and charge-ordered $α$-(BEDT-TTF)$_2$I$_3$: on the role of disorder in dc transport and dielectric properties|Tomislav Ivek,Matija Čulo,Marko Kuveždić,Eduard Tutiš,Mario Basletić,Branimir Mihaljević,Emil Tafra,Silvia Tomić,Anja Löhle,Martin Dressel,Dieter Schweitzer,Bojana Korin-Hamzić###
(1573914, 1573915)
 alpha-(BEDT-TTF)2I3 is a prominent example of charge ordering amongorganic conductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Semimetallic and charge-ordered $α$-(BEDT-TTF)$_2$I$_3$: on the role of disorder in dc transport and dielectric properties|Tomislav Ivek,Matija Čulo,Marko Kuveždić,Eduard Tutiš,Mario Basletić,Branimir Mihaljević,Emil Tafra,Silvia Tomić,Anja Löhle,Martin Dressel,Dieter Schweitzer,Bojana Korin-Hamzić###
(1573939, 1573939)
 In this work we explore the details of transport within thecharge-ordered as well as semimetallic phase at ambient pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Semimetallic and charge-ordered $α$-(BEDT-TTF)$_2$I$_3$: on the role of disorder in dc transport and dielectric properties|Tomislav Ivek,Matija Čulo,Marko Kuveždić,Eduard Tutiš,Mario Basletić,Branimir Mihaljević,Emil Tafra,Silvia Tomić,Anja Löhle,Martin Dressel,Dieter Schweitzer,Bojana Korin-Hamzić###
(1573983, 1573983)
 In thehigh-temperature semimetallic phase, the mobilities and concentrations of bothelectrons and holes conspire in such a way to create an almosttemperature-independent conductivity as well as a low Hall effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Semimetallic and charge-ordered $α$-(BEDT-TTF)$_2$I$_3$: on the role of disorder in dc transport and dielectric properties|Tomislav Ivek,Matija Čulo,Marko Kuveždić,Eduard Tutiš,Mario Basletić,Branimir Mihaljević,Emil Tafra,Silvia Tomić,Anja Löhle,Martin Dressel,Dieter Schweitzer,Bojana Korin-Hamzić###
(1574105, 1574105)
 At lowtemperatures, within the insulating charge-ordered phase two channels ofconduction can be discerned a temperature-dependent activation which followsthe mean-field behavior, and a nearest-neighbor hopping contribution.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Semimetallic and charge-ordered $α$-(BEDT-TTF)$_2$I$_3$: on the role of disorder in dc transport and dielectric properties|Tomislav Ivek,Matija Čulo,Marko Kuveždić,Eduard Tutiš,Mario Basletić,Branimir Mihaljević,Emil Tafra,Silvia Tomić,Anja Löhle,Martin Dressel,Dieter Schweitzer,Bojana Korin-Hamzić###
(1574307, 1574307)
 The source of this disorder can be found in the anion layers whichrandomly perturb BEDT-TTF molecules through hydrogen bonds.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Semimetallic and charge-ordered $α$-(BEDT-TTF)$_2$I$_3$: on the role of disorder in dc transport and dielectric properties|Tomislav Ivek,Matija Čulo,Marko Kuveždić,Eduard Tutiš,Mario Basletić,Branimir Mihaljević,Emil Tafra,Silvia Tomić,Anja Löhle,Martin Dressel,Dieter Schweitzer,Bojana Korin-Hamzić###
(1574314, 1574314)
 The source of this disorder can be found in the anion layers whichrandomly perturb BEDT-TTF molecules through hydrogen bonds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ba(Fe0.96Co0.04)2As2
###Effects of proton irradiation on flux-pinning properties of underdoped Ba(Fe$_{0.96}$Co$_{0.04}$)$_2$As$_2$ pnictide superconductor|S. Salem-Sugui Jr.,D. Moseley,S. J. Stuard,A. D. Alvarenga,A. S. Sefat,L. F. Cohen,L. Ghivelder###
(1574353, 1574362)
Effects of proton irradiation on flux-pinning properties of underdoped Ba(Fe0.96Co0.04)2As2 pnictide superconductor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.384,0.016,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ba(Fe0.96Co0.04)2As2
###Effects of proton irradiation on flux-pinning properties of underdoped Ba(Fe$_{0.96}$Co$_{0.04}$)$_2$As$_2$ pnictide superconductor|S. Salem-Sugui Jr.,D. Moseley,S. J. Stuard,A. D. Alvarenga,A. S. Sefat,L. F. Cohen,L. Ghivelder###
(1574386, 1574395)
 We study the effect of proton irradiation onBa(Fe0.96Co0.04)2As2 superconducting single crystals fromcombined magnetisation and magnetoresistivity measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.384,0.016,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

U0
###Effects of proton irradiation on flux-pinning properties of underdoped Ba(Fe$_{0.96}$Co$_{0.04}$)$_2$As$_2$ pnictide superconductor|S. Salem-Sugui Jr.,D. Moseley,S. J. Stuard,A. D. Alvarenga,A. S. Sefat,L. F. Cohen,L. Ghivelder###
(1574444, 1574445)
 The study allowsthe extraction of the values of the apparent pinning energy U0 of thesamples prior to and after irradiation, as well as comparison of the values ofU0 obtained from the flux-flow reversible region with those from theflux-creep irreversible region.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

U0
###Effects of proton irradiation on flux-pinning properties of underdoped Ba(Fe$_{0.96}$Co$_{0.04}$)$_2$As$_2$ pnictide superconductor|S. Salem-Sugui Jr.,D. Moseley,S. J. Stuard,A. D. Alvarenga,A. S. Sefat,L. F. Cohen,L. Ghivelder###
(1574482, 1574483)
 The study allowsthe extraction of the values of the apparent pinning energy U0 of thesamples prior to and after irradiation, as well as comparison of the values ofU0 obtained from the flux-flow reversible region with those from theflux-creep irreversible region.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

U0
###Effects of proton irradiation on flux-pinning properties of underdoped Ba(Fe$_{0.96}$Co$_{0.04}$)$_2$As$_2$ pnictide superconductor|S. Salem-Sugui Jr.,D. Moseley,S. J. Stuard,A. D. Alvarenga,A. S. Sefat,L. F. Cohen,L. Ghivelder###
(1574534, 1574535)
 Irradiation reduces Tc modestly, butsignificantly reduces U0 in both regimes the critical current density Jcis modified, most strikingly by the disappearance of the second magnetisationpeak after irradiation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

U0
###Effects of proton irradiation on flux-pinning properties of underdoped Ba(Fe$_{0.96}$Co$_{0.04}$)$_2$As$_2$ pnictide superconductor|S. Salem-Sugui Jr.,D. Moseley,S. J. Stuard,A. D. Alvarenga,A. S. Sefat,L. F. Cohen,L. Ghivelder###
(1574761, 1574762)
 By consideration of amodel that takes into account the effect of disorder on the irreversibilityline, the data suggests that irradiation produced a considerable reduction inthe average effective disorder overall, consistent with the changes observed inU0 and Jc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu2-xTe
###Unconventional Large Linear Magnetoresistance in Cu$_{2-x}$Te|Ali A. Sirusi,Alexander Page,Lucia Steinke,Meigan C. Aronson,Ctirad Uher,Joseph H. Ross Jr###
(1574788, 1574792)
Unconventional Large Linear Magnetoresistance in Cu2-xTe.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[36.0, 250, '%', 1],[40.0, 2, 'K', 1],[45.0, 9, 'T', 1],[70.0, 0.13, 'to', 2],[72.0, 0.22, ',', 2]

Cu2-xTe
###Unconventional Large Linear Magnetoresistance in Cu$_{2-x}$Te|Ali A. Sirusi,Alexander Page,Lucia Steinke,Meigan C. Aronson,Ctirad Uher,Joseph H. Ross Jr###
(1574809, 1574813)
 We report a large linear magnetoresistance in Cu2-xTe, reachingDeltarho/rho(0)  250% at 2 K in a 9 T field.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[15.0, 250, '%', 0],[19.0, 2, 'K', 0],[24.0, 9, 'T', 0],[49.0, 0.13, 'to', 1],[51.0, 0.22, ',', 1]

Ag2
###Unconventional Large Linear Magnetoresistance in Cu$_{2-x}$Te|Ali A. Sirusi,Alexander Page,Lucia Steinke,Meigan C. Aronson,Ctirad Uher,Joseph H. Ross Jr###
(1574888, 1574889)
 This is observed forsamples with x<missing VAR> in the range 0.13 to 0.22, and the results are comparable tothe effects observed in Ag2 X<missing VAR> materials, although in this case the resultsappear for a much wider range of bulk carrier density.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 250, '%', 1],[56.0, 2, 'K', 1],[51.0, 9, 'T', 1],[26.0, 0.13, 'to', 0],[24.0, 0.22, ',', 0]

In
###Gigantic negative magnetoresistance in a disordered topological insulator|Oliver Breunig,Zhiwei Wang,A. A. Taskin,Jonathan Lux,Achim Rosch,Yoichi Ando###
(1575398, 1575398)
 In the newly-synthesized bulk-insulating topologicalinsulator TlBi0.15Sb0.85Te2, we observed gigantic negative MRreaching 98% in 14 T at 10 K, which is unprecedented in a nonmagnetic system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 98, '%', 0],[44.0, 14, 'T', 0],[47.0, 10, 'K', 0]

TlBi0.15Sb0.85Te2
###Gigantic negative magnetoresistance in a disordered topological insulator|Oliver Breunig,Zhiwei Wang,A. A. Taskin,Jonathan Lux,Achim Rosch,Yoichi Ando###
(1575415, 1575421)
 In the newly-synthesized bulk-insulating topologicalinsulator TlBi0.15Sb0.85Te2, we observed gigantic negative MRreaching 98% in 14 T at 10 K, which is unprecedented in a nonmagnetic system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2125,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.0375,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 98, '%', 0],[21.0, 14, 'T', 0],[24.0, 10, 'K', 0]

Ag2
###Gigantic negative magnetoresistance in a disordered topological insulator|Oliver Breunig,Zhiwei Wang,A. A. Taskin,Jonathan Lux,Achim Rosch,Yoichi Ando###
(1575546, 1575547)
 Since disorder can also lead to non-saturating linear MR inAg2deltaSe, the present finding suggests that disorder engineering innarrow-gap systems is useful for realizing gigantic MR in both positive andnegative directions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 98, '%', 2],[104.0, 14, 'T', 2],[101.0, 10, 'K', 2]

Se
###Gigantic negative magnetoresistance in a disordered topological insulator|Oliver Breunig,Zhiwei Wang,A. A. Taskin,Jonathan Lux,Achim Rosch,Yoichi Ando###
(1575549, 1575549)
 Since disorder can also lead to non-saturating linear MR inAg2deltaSe, the present finding suggests that disorder engineering innarrow-gap systems is useful for realizing gigantic MR in both positive andnegative directions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 98, '%', 2],[107.0, 14, 'T', 2],[104.0, 10, 'K', 2]

WTe2
###Nearly isotropic superconductivity in layered Weyl semimetal WTe$_2$ at 98.5 kbar|Yuk Tai Chan,P. L. Alireza,K. Y. Yip,Q. Niu,K. T. Lai,Swee K. Goh###
(1575624, 1575626)
Nearly isotropic superconductivity in layered Weyl semimetal WTe2 at 98.5 kbar.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 98.5, 'kbar', 0],[128.0, 98.5, 'kbar', 2],[233.0, 2.2, 'K', 4],[246.0, 0.03, 'K', 4],[373.0, 1.7, ',', 6]

WTe2
###Nearly isotropic superconductivity in layered Weyl semimetal WTe$_2$ at 98.5 kbar|Yuk Tai Chan,P. L. Alireza,K. Y. Yip,Q. Niu,K. T. Lai,Swee K. Goh###
(1575640, 1575642)
 Layered transition metal dichalcogenide WTe2 has recently attractedsignificant attention due to the discovery of an extremely largemagnetoresistance, a predicted type-II Weyl semimetallic state, and thepressure-induced superconducting state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 98.5, 'kbar', 1],[112.0, 98.5, 'kbar', 1],[217.0, 2.2, 'K', 3],[230.0, 0.03, 'K', 3],[357.0, 1.7, ',', 5]

II
###Nearly isotropic superconductivity in layered Weyl semimetal WTe$_2$ at 98.5 kbar|Yuk Tai Chan,P. L. Alireza,K. Y. Yip,Q. Niu,K. T. Lai,Swee K. Goh###
(1575681, 1575682)
 Layered transition metal dichalcogenide WTe2 has recently attractedsignificant attention due to the discovery of an extremely largemagnetoresistance, a predicted type-II Weyl semimetallic state, and thepressure-induced superconducting state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 98.5, 'kbar', 1],[72.0, 98.5, 'kbar', 1],[177.0, 2.2, 'K', 3],[190.0, 0.03, 'K', 3],[317.0, 1.7, ',', 5]

WTe2
###Nearly isotropic superconductivity in layered Weyl semimetal WTe$_2$ at 98.5 kbar|Yuk Tai Chan,P. L. Alireza,K. Y. Yip,Q. Niu,K. T. Lai,Swee K. Goh###
(1575786, 1575788)
 By a careful measurement of thesuperconducting upper critical fields as a function of the magnetic field angleat a pressure as high as 98.5 kbar, we provide the first detailed examinationof the dimensionality of the superconducting condensate in WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 98.5, 'kbar', 2],[32.0, 98.5, 'kbar', 0],[71.0, 2.2, 'K', 2],[84.0, 0.03, 'K', 2],[211.0, 1.7, ',', 4]

H
###Nearly isotropic superconductivity in layered Weyl semimetal WTe$_2$ at 98.5 kbar|Yuk Tai Chan,P. L. Alireza,K. Y. Yip,Q. Niu,K. T. Lai,Swee K. Goh###
(1575926, 1575926)
 The temperature dependence of the uppercritical field, determined for both Hperp ab and Hparallel ab, can beunderstood by a conventional orbital depairing mechanism.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[297.0, 98.5, 'kbar', 5],[172.0, 98.5, 'kbar', 3],[67.0, 2.2, 'K', 1],[54.0, 0.03, 'K', 1],[73.0, 1.7, ',', 1]

H
###Nearly isotropic superconductivity in layered Weyl semimetal WTe$_2$ at 98.5 kbar|Yuk Tai Chan,P. L. Alireza,K. Y. Yip,Q. Niu,K. T. Lai,Swee K. Goh###
(1575933, 1575933)
 The temperature dependence of the uppercritical field, determined for both Hperp ab and Hparallel ab, can beunderstood by a conventional orbital depairing mechanism.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[304.0, 98.5, 'kbar', 5],[179.0, 98.5, 'kbar', 3],[74.0, 2.2, 'K', 1],[61.0, 0.03, 'K', 1],[66.0, 1.7, ',', 1]

WTe2
###Nearly isotropic superconductivity in layered Weyl semimetal WTe$_2$ at 98.5 kbar|Yuk Tai Chan,P. L. Alireza,K. Y. Yip,Q. Niu,K. T. Lai,Swee K. Goh###
(1576040, 1576042)
 Our findings thus identify WTe2 as anearly isotropic superconductor, with an anisotropy factor among one of thelowest known in superconducting transition metal dichalcogenides.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[411.0, 98.5, 'kbar', 7],[286.0, 98.5, 'kbar', 5],[181.0, 2.2, 'K', 3],[168.0, 0.03, 'K', 3],[41.0, 1.7, ',', 1]

In
###Theory of magnetotransport in artificial kagome spin ice|Gia-Wei Chern###
(1576190, 1576190)
 In this picture, the system can be viewed as aresistor network driven by voltage sources that are located at vertices of thehoneycomb array.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nb
###Nematic topological superconducting phase in Nb-doped Bi2Se3|Junying Shen,Wen-Yu He,Noah Fan Qi Yuan,Zengle Huang,Chang-woo Cho,Seng Huat Lee,Yew San Hor,Kam Tuen Law,Rolf Lortz###
(1576486, 1576486)
Nematic topological superconducting phase in Nb-doped Bi2Se3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Se3
###Nematic topological superconducting phase in Nb-doped Bi2Se3|Junying Shen,Wen-Yu He,Noah Fan Qi Yuan,Zengle Huang,Chang-woo Cho,Seng Huat Lee,Yew San Hor,Kam Tuen Law,Rolf Lortz###
(1576490, 1576493)
Nematic topological superconducting phase in Nb-doped Bi2Se3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nb
###Nematic topological superconducting phase in Nb-doped Bi2Se3|Junying Shen,Wen-Yu He,Noah Fan Qi Yuan,Zengle Huang,Chang-woo Cho,Seng Huat Lee,Yew San Hor,Kam Tuen Law,Rolf Lortz###
(1576650, 1576650)
 We present a study on the superconductingupper critical field of the Nb-doped topological insulator NbxBi2Se3 forvarious magnetic field orientations parallel and perpendicular to the basalplane of the Bi2Se3 layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Se3
###Nematic topological superconducting phase in Nb-doped Bi2Se3|Junying Shen,Wen-Yu He,Noah Fan Qi Yuan,Zengle Huang,Chang-woo Cho,Seng Huat Lee,Yew San Hor,Kam Tuen Law,Rolf Lortz###
(1576659, 1576662)
 We present a study on the superconductingupper critical field of the Nb-doped topological insulator NbxBi2Se3 forvarious magnetic field orientations parallel and perpendicular to the basalplane of the Bi2Se3 layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Se3
###Nematic topological superconducting phase in Nb-doped Bi2Se3|Junying Shen,Wen-Yu He,Noah Fan Qi Yuan,Zengle Huang,Chang-woo Cho,Seng Huat Lee,Yew San Hor,Kam Tuen Law,Rolf Lortz###
(1576694, 1576697)
 We present a study on the superconductingupper critical field of the Nb-doped topological insulator NbxBi2Se3 forvarious magnetic field orientations parallel and perpendicular to the basalplane of the Bi2Se3 layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Nematic topological superconducting phase in Nb-doped Bi2Se3|Junying Shen,Wen-Yu He,Noah Fan Qi Yuan,Zengle Huang,Chang-woo Cho,Seng Huat Lee,Yew San Hor,Kam Tuen Law,Rolf Lortz###
(1576727, 1576727)
 The data were obtained by two complementaryexperimental techniques, magnetoresistance and D<missing VAR>C magnetization, on threedifferent single crystalline samples of the same batch.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nb
###Nematic topological superconducting phase in Nb-doped Bi2Se3|Junying Shen,Wen-Yu He,Noah Fan Qi Yuan,Zengle Huang,Chang-woo Cho,Seng Huat Lee,Yew San Hor,Kam Tuen Law,Rolf Lortz###
(1576955, 1576955)
This provides strong experimental evidence that Nb-doped Bi2Se3 is a nematictopological superconductor similar to the Cu- and Sr-doped Bi2Se3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Se3
###Nematic topological superconducting phase in Nb-doped Bi2Se3|Junying Shen,Wen-Yu He,Noah Fan Qi Yuan,Zengle Huang,Chang-woo Cho,Seng Huat Lee,Yew San Hor,Kam Tuen Law,Rolf Lortz###
(1576959, 1576962)
This provides strong experimental evidence that Nb-doped Bi2Se3 is a nematictopological superconductor similar to the Cu- and Sr-doped Bi2Se3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Nematic topological superconducting phase in Nb-doped Bi2Se3|Junying Shen,Wen-Yu He,Noah Fan Qi Yuan,Zengle Huang,Chang-woo Cho,Seng Huat Lee,Yew San Hor,Kam Tuen Law,Rolf Lortz###
(1576981, 1576981)
This provides strong experimental evidence that Nb-doped Bi2Se3 is a nematictopological superconductor similar to the Cu- and Sr-doped Bi2Se3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr
###Nematic topological superconducting phase in Nb-doped Bi2Se3|Junying Shen,Wen-Yu He,Noah Fan Qi Yuan,Zengle Huang,Chang-woo Cho,Seng Huat Lee,Yew San Hor,Kam Tuen Law,Rolf Lortz###
(1576986, 1576986)
This provides strong experimental evidence that Nb-doped Bi2Se3 is a nematictopological superconductor similar to the Cu- and Sr-doped Bi2Se3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Se3
###Nematic topological superconducting phase in Nb-doped Bi2Se3|Junying Shen,Wen-Yu He,Noah Fan Qi Yuan,Zengle Huang,Chang-woo Cho,Seng Huat Lee,Yew San Hor,Kam Tuen Law,Rolf Lortz###
(1576990, 1576993)
This provides strong experimental evidence that Nb-doped Bi2Se3 is a nematictopological superconductor similar to the Cu- and Sr-doped Bi2Se3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Valleytronics in merging Dirac cones: All-electric-controlled valley filter, valve and universal reversible logic gate|Yee Sin Ang,Shengyuan A. Yang,C. Zhang,Zhongshui Ma,L. K. Ang###
(1577063, 1577063)
 Despite much anticipation of valleytronics as a candidate to replace theageing CM<missing VAR>OS-based information processing, its progress is severely hindered bythe lack of practical ways to manipulate valley polarization all-electricallyin an electrostatic setting.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[243.0, 10, ',', 4],[245.0, 0, '%', 4],[289.0, 16, 'types', 5]

OS
###Valleytronics in merging Dirac cones: All-electric-controlled valley filter, valve and universal reversible logic gate|Yee Sin Ang,Shengyuan A. Yang,C. Zhang,Zhongshui Ma,L. K. Ang###
(1577065, 1577066)
 Despite much anticipation of valleytronics as a candidate to replace theageing CM<missing VAR>OS-based information processing, its progress is severely hindered bythe lack of practical ways to manipulate valley polarization all-electricallyin an electrostatic setting.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[240.0, 10, ',', 4],[242.0, 0, '%', 4],[286.0, 16, 'types', 5]

C
###Nanoclustering phase competition induces the resistivity hump in colossal magnetoresistive manganites|Kalpataru Pradhan,Seiji Yunoki###
(1577715, 1577715)
 Using a two-band double-exchange model with Jahn-Teller lattice distortionsand super-exchange interactions, supplemented by quenched disorder, at electrondensity n<missing VAR>0.65, we explicitly demonstrate the coexistence of the n<missing VAR> 1/2-type (pi, pi) charge-ordered and the ferromagnetic nanoclusters abovethe ferromagnetic transition temperature T<missing VAR>rm c<missing VAR> in colossalmagnetoresistive (CMR) manganites.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 0.65, ',', 0],[183.0, 0, ',', 3]

In
###Nanoclustering phase competition induces the resistivity hump in colossal magnetoresistive manganites|Kalpataru Pradhan,Seiji Yunoki###
(1577933, 1577933)
 In addition, we show thatthe volume fraction of the charge-ordered nanoclusters decreases withincreasing the bandwidth and consequently the resistivity hump diminishes forlarge bandwidth manganites, in good qualitative agreement with experiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[288.0, 0.65, ',', 4],[35.0, 0, ',', 1]

C
###Nanoclustering phase competition induces the resistivity hump in colossal magnetoresistive manganites|Kalpataru Pradhan,Seiji Yunoki###
(1578041, 1578041)
 Theobtained insights from our calculations provide a complete pathway tounderstand the phase competition in CMR manganites.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[396.0, 0.65, ',', 5],[143.0, 0, ',', 2]

Ni
###Periodic chiral magnetic domains in single-crystal nickel nanowires|Jimmy J. Kan,Marko V. Lubarda,Keith T. Chan,Vojtech Uhlir,Andreas Scholl,Vitaliy Lomakin,Eric E. Fullerton###
(1578114, 1578114)
 We report on experimental and computational investigations of the domainstructure of 0.2 x<missing VAR> 0.2 x 8 mum<missing VAR> single-crystal Ni nanowires (NWs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 0.2, 'x', 0],[163.0, 250, 'nm', 3],[205.0, 240, 'nm', 4]

N
###Periodic chiral magnetic domains in single-crystal nickel nanowires|Jimmy J. Kan,Marko V. Lubarda,Keith T. Chan,Vojtech Uhlir,Andreas Scholl,Vitaliy Lomakin,Eric E. Fullerton###
(1578119, 1578119)
 We report on experimental and computational investigations of the domainstructure of 0.2 x<missing VAR> 0.2 x 8 mum<missing VAR> single-crystal Ni nanowires (NWs).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 0.2, 'x', 0],[158.0, 250, 'nm', 3],[200.0, 240, 'nm', 4]

Ni
###Periodic chiral magnetic domains in single-crystal nickel nanowires|Jimmy J. Kan,Marko V. Lubarda,Keith T. Chan,Vojtech Uhlir,Andreas Scholl,Vitaliy Lomakin,Eric E. Fullerton###
(1578126, 1578126)
 The NiNWs were grown by a thermal chemical vapor deposition technique that results inhighly-oriented single-crystal structures on amorphous SiOx coated Sisubstrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 0.2, 'x', 1],[151.0, 250, 'nm', 2],[193.0, 240, 'nm', 3]

N
###Periodic chiral magnetic domains in single-crystal nickel nanowires|Jimmy J. Kan,Marko V. Lubarda,Keith T. Chan,Vojtech Uhlir,Andreas Scholl,Vitaliy Lomakin,Eric E. Fullerton###
(1578129, 1578129)
 The NiNWs were grown by a thermal chemical vapor deposition technique that results inhighly-oriented single-crystal structures on amorphous SiOx coated Sisubstrates.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 0.2, 'x', 1],[148.0, 250, 'nm', 2],[190.0, 240, 'nm', 3]

Si
###Periodic chiral magnetic domains in single-crystal nickel nanowires|Jimmy J. Kan,Marko V. Lubarda,Keith T. Chan,Vojtech Uhlir,Andreas Scholl,Vitaliy Lomakin,Eric E. Fullerton###
(1578171, 1578171)
 The NiNWs were grown by a thermal chemical vapor deposition technique that results inhighly-oriented single-crystal structures on amorphous SiOx coated Sisubstrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 0.2, 'x', 1],[106.0, 250, 'nm', 2],[148.0, 240, 'nm', 3]

Si
###Periodic chiral magnetic domains in single-crystal nickel nanowires|Jimmy J. Kan,Marko V. Lubarda,Keith T. Chan,Vojtech Uhlir,Andreas Scholl,Vitaliy Lomakin,Eric E. Fullerton###
(1578176, 1578176)
 The NiNWs were grown by a thermal chemical vapor deposition technique that results inhighly-oriented single-crystal structures on amorphous SiOx coated Sisubstrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 0.2, 'x', 1],[101.0, 250, 'nm', 2],[143.0, 240, 'nm', 3]

Ni
###Periodic chiral magnetic domains in single-crystal nickel nanowires|Jimmy J. Kan,Marko V. Lubarda,Keith T. Chan,Vojtech Uhlir,Andreas Scholl,Vitaliy Lomakin,Eric E. Fullerton###
(1578190, 1578190)
 Magnetoresistance measurements of the Ni NWs suggest the averagemagnetization points largely off the NW long axis at zero field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 0.2, 'x', 2],[87.0, 250, 'nm', 1],[129.0, 240, 'nm', 2]

N
###Periodic chiral magnetic domains in single-crystal nickel nanowires|Jimmy J. Kan,Marko V. Lubarda,Keith T. Chan,Vojtech Uhlir,Andreas Scholl,Vitaliy Lomakin,Eric E. Fullerton###
(1578192, 1578192)
 Magnetoresistance measurements of the Ni NWs suggest the averagemagnetization points largely off the NW long axis at zero field.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 0.2, 'x', 2],[85.0, 250, 'nm', 1],[127.0, 240, 'nm', 2]

NW
###Periodic chiral magnetic domains in single-crystal nickel nanowires|Jimmy J. Kan,Marko V. Lubarda,Keith T. Chan,Vojtech Uhlir,Andreas Scholl,Vitaliy Lomakin,Eric E. Fullerton###
(1578212, 1578213)
 Magnetoresistance measurements of the Ni NWs suggest the averagemagnetization points largely off the NW long axis at zero field.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 0.2, 'x', 2],[64.0, 250, 'nm', 1],[106.0, 240, 'nm', 2]

NW
###Periodic chiral magnetic domains in single-crystal nickel nanowires|Jimmy J. Kan,Marko V. Lubarda,Keith T. Chan,Vojtech Uhlir,Andreas Scholl,Vitaliy Lomakin,Eric E. Fullerton###
(1578369, 1578370)
 Thismagnetization configuration involves a periodic array of alternating chiralityvortex domains distributed along the length of the NW.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[266.0, 0.2, 'x', 5],[92.0, 250, 'nm', 2],[50.0, 240, 'nm', 1]

Ni
###Periodic chiral magnetic domains in single-crystal nickel nanowires|Jimmy J. Kan,Marko V. Lubarda,Keith T. Chan,Vojtech Uhlir,Andreas Scholl,Vitaliy Lomakin,Eric E. Fullerton###
(1578398, 1578398)
 Vortex formation isattributable to the cubic anisotropy of the single crystal Ni NW system and itsreduced structural dimensions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[295.0, 0.2, 'x', 6],[121.0, 250, 'nm', 3],[79.0, 240, 'nm', 2]

NW
###Periodic chiral magnetic domains in single-crystal nickel nanowires|Jimmy J. Kan,Marko V. Lubarda,Keith T. Chan,Vojtech Uhlir,Andreas Scholl,Vitaliy Lomakin,Eric E. Fullerton###
(1578400, 1578401)
 Vortex formation isattributable to the cubic anisotropy of the single crystal Ni NW system and itsreduced structural dimensions.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[297.0, 0.2, 'x', 6],[123.0, 250, 'nm', 3],[81.0, 240, 'nm', 2]

P
###Non-Abelian Charge Transport in Three-Flavor Gauge Semimetal Model with Braiding Majoranas|Halina V. Grushevskaya,George Krylov###
(1578722, 1578722)
 Anotherone is to describe mathbbZ<missing VAR>2 topological semimetals, APRES spectra ofwhich testify on eight-fold degenerate chiral fermions with SU(2) holonomy ofwave functions, whereas the last can not be reproduced within existing models.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Non-Abelian Charge Transport in Three-Flavor Gauge Semimetal Model with Braiding Majoranas|Halina V. Grushevskaya,George Krylov###
(1578725, 1578725)
 Anotherone is to describe mathbbZ<missing VAR>2 topological semimetals, APRES spectra ofwhich testify on eight-fold degenerate chiral fermions with SU(2) holonomy ofwave functions, whereas the last can not be reproduced within existing models.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co3Sn2S2
###Giant anomalous Hall effect in a ferromagnetic Kagome-lattice semimetal|Enke Liu,Yan Sun,Nitesh Kumar,Lukas Meuchler,Aili Sun,Lin Jiao,Shuo-Ying Yang,Defa Liu,Aiji Liang,Qiunan Xu,Johannes Kroder,Vicky Seuss,Horst Borrmann,Chandra Shekhar,Zhaosheng Wang,Chuanying Xi,Wenhong Wang,Walter Schnelle,Steffen Wirth,Yulin Chen,Sebastian T. B. Goennenwein,Claudia Felser###
(1579154, 1579159)
 Here, we report a magnetic Weyl semimetal candidate Co3Sn2S2 with aquasi-two-dimensional crystal structure consisting of stacked Kagome lattices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[219.0, 1130, 'S', 4],[227.0, 20, '%', 4]

Co3Sn2S2
###Giant anomalous Hall effect in a ferromagnetic Kagome-lattice semimetal|Enke Liu,Yan Sun,Nitesh Kumar,Lukas Meuchler,Aili Sun,Lin Jiao,Shuo-Ying Yang,Defa Liu,Aiji Liang,Qiunan Xu,Johannes Kroder,Vicky Seuss,Horst Borrmann,Chandra Shekhar,Zhaosheng Wang,Chuanying Xi,Wenhong Wang,Walter Schnelle,Steffen Wirth,Yulin Chen,Sebastian T. B. Goennenwein,Claudia Felser###
(1579444, 1579449)
 Combining the Kagome-lattice structureand the long-range out-of-plane ferromagnetic order of Co3Sn2S2, we expect thatthis material is an excellent candidate for observation of the quantumanomalous Hall state in the two-dimensional limit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 1130, 'S', 1],[58.0, 20, '%', 1]

FeSe
###Influence of disorder on the signature of pseudogap and multigap superconducting behavior in FeSe|Sahana Rößler,Chien-Lung Huang,Lin Jiao,Cevriye Koz,Ulrich Schwarz,Steffen Wirth###
(1579533, 1579534)
Influence of disorder on the signature of pseudogap and multigap superconducting behavior in FeSe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[331.0, 2, 'K', 5]

FeSe
###Influence of disorder on the signature of pseudogap and multigap superconducting behavior in FeSe|Sahana Rößler,Chien-Lung Huang,Lin Jiao,Cevriye Koz,Ulrich Schwarz,Steffen Wirth###
(1579543, 1579544)
 We investigated several FeSe single crystals grown by two different methodsby utilizing experimental techniques namely, resistivity, magnetoresistance,specific heat, scanning tunneling microscopy, and spectroscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[321.0, 2, 'K', 4]

K
###Influence of disorder on the signature of pseudogap and multigap superconducting behavior in FeSe|Sahana Rößler,Chien-Lung Huang,Lin Jiao,Cevriye Koz,Ulrich Schwarz,Steffen Wirth###
(1579769, 1579769)
 For instance, the onsettemperature of anisotropic spin-fluctuations at T<missing VAR> approx 75 K, and thetemperature of the opening-up of a partial gap in the density of states atT<missing VAR> approx 30 K are not discernible in the samples with lower RRR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 2, 'K', 1]

K
###Influence of disorder on the signature of pseudogap and multigap superconducting behavior in FeSe|Sahana Rößler,Chien-Lung Huang,Lin Jiao,Cevriye Koz,Ulrich Schwarz,Steffen Wirth###
(1579814, 1579814)
 For instance, the onsettemperature of anisotropic spin-fluctuations at T<missing VAR> approx 75 K, and thetemperature of the opening-up of a partial gap in the density of states atT<missing VAR> approx 30 K are not discernible in the samples with lower RRR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 2, 'K', 1]

LaAlO3/SrTiO3
###Effect of multiband transport on charge carrier density fluctuations at the LaAlO$_3$/SrTiO$_3$ interface|Gopi Nath Daptary,Pramod Kumar,Anjana Dogra,Aveek Bid###
(1580049, 1580057)
Effect of multiband transport on charge carrier density fluctuations at the LaAlO3/SrTiO3 interface.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

In
###Effect of multiband transport on charge carrier density fluctuations at the LaAlO$_3$/SrTiO$_3$ interface|Gopi Nath Daptary,Pramod Kumar,Anjana Dogra,Aveek Bid###
(1580134, 1580134)
 Inthis article we present a detailed study of the electrical transport propertiesof the high-mobility two-dimensional electron gas residing at the interface ofLaAlO3/SrTiO3, a prototypical multi-band superconductor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaAlO3/SrTiO3
###Effect of multiband transport on charge carrier density fluctuations at the LaAlO$_3$/SrTiO$_3$ interface|Gopi Nath Daptary,Pramod Kumar,Anjana Dogra,Aveek Bid###
(1580189, 1580197)
 Inthis article we present a detailed study of the electrical transport propertiesof the high-mobility two-dimensional electron gas residing at the interface ofLaAlO3/SrTiO3, a prototypical multi-band superconductor.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

At
###Effect of multiband transport on charge carrier density fluctuations at the LaAlO$_3$/SrTiO$_3$ interface|Gopi Nath Daptary,Pramod Kumar,Anjana Dogra,Aveek Bid###
(1580353, 1580353)
 At low carrierdensities, resistance noise is dominated by number-density fluctuations arisingfrom trapping-detrapping of charge carriers from defects in the underlyingSrTiO3 substrate, characteristic of a single-band semiconductor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Effect of multiband transport on charge carrier density fluctuations at the LaAlO$_3$/SrTiO$_3$ interface|Gopi Nath Daptary,Pramod Kumar,Anjana Dogra,Aveek Bid###
(1580405, 1580408)
 At low carrierdensities, resistance noise is dominated by number-density fluctuations arisingfrom trapping-detrapping of charge carriers from defects in the underlyingSrTiO3 substrate, characteristic of a single-band semiconductor.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PtFeSb
###On the possibility of magnetic Weyl fermions in non-symmorphic compound PtFeSb|M. G. Vergniory,L. Elcoro,F. Orlandi,B. Balke,Y. -H. Chan,J. Nuss,A. P. Schnyder,L. M. Schoop###
(1580564, 1580566)
On the possibility of magnetic Weyl fermions in non-symmorphic compound PtFeSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###On the possibility of magnetic Weyl fermions in non-symmorphic compound PtFeSb|M. G. Vergniory,L. Elcoro,F. Orlandi,B. Balke,Y. -H. Chan,J. Nuss,A. P. Schnyder,L. M. Schoop###
(1580730, 1580730)
 In this paper we present a new way of inducing two kinds of Weylfermions, based on two- and three-fold band crossings, in the non-symmorphicmagnetic material PtFeSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PtFeSb
###On the possibility of magnetic Weyl fermions in non-symmorphic compound PtFeSb|M. G. Vergniory,L. Elcoro,F. Orlandi,B. Balke,Y. -H. Chan,J. Nuss,A. P. Schnyder,L. M. Schoop###
(1580793, 1580795)
 In this paper we present a new way of inducing two kinds of Weylfermions, based on two- and three-fold band crossings, in the non-symmorphicmagnetic material PtFeSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Graphite in 90 T: Evidence for Strong-coupling Excitonic Pairing|Zengwei Zhu,Pan Nie,Benoît Fauqué,Ross D. McDonald,Neil Harrison,Kamran Behnia###
(1581308, 1581308)
 Remarkably, the threshold field for the destruction of thesecond insulator (phase B) is temperature-independent with no detectableLandau-level crossing nearby.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[303.0, 90, 'T', 5],[210.0, 90.5, 'T', 3],[206.0, 1.4, 'K', 3],[173.0, 75, 'T', 3]

S
###Unconventional Planar Hall Effect in Exchange-Coupled Topological Insulator-Ferromagnetic Insulator Heterostructures|David Rakhmilevich,Fei Wang,Weiwei Zhao,Moses H. W. Chan,Jagadeesh S. Moodera,Chaoxing Liu,Cui-Zu Chang###
(1581443, 1581443)
 The Dirac electrons occupying the surface states (SSs) of topologicalinsulators (T<missing VAR>Is) have been predicted to exhibit many exciting magneto-transportphenomena.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[248.0, 3, 'D', 4],[263.0, 2, 'D', 4]

PH
###Unconventional Planar Hall Effect in Exchange-Coupled Topological Insulator-Ferromagnetic Insulator Heterostructures|David Rakhmilevich,Fei Wang,Weiwei Zhao,Moses H. W. Chan,Jagadeesh S. Moodera,Chaoxing Liu,Cui-Zu Chang###
(1581511, 1581512)
 Here we report on the first experimental observation of anunconventional planar Hall effect (PHE) and an electrically gate-tunablehysteretic planar magnetoresistance (PMR) in EuS/T<missing VAR>I heterostructures, in whichEuS is a ferromagnetic insulator (FM<missing VAR>I) with an in-plane magnetization.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 3, 'D', 3],[194.0, 2, 'D', 3]

P
###Unconventional Planar Hall Effect in Exchange-Coupled Topological Insulator-Ferromagnetic Insulator Heterostructures|David Rakhmilevich,Fei Wang,Weiwei Zhao,Moses H. W. Chan,Jagadeesh S. Moodera,Chaoxing Liu,Cui-Zu Chang###
(1581534, 1581534)
 Here we report on the first experimental observation of anunconventional planar Hall effect (PHE) and an electrically gate-tunablehysteretic planar magnetoresistance (PMR) in EuS/T<missing VAR>I heterostructures, in whichEuS is a ferromagnetic insulator (FM<missing VAR>I) with an in-plane magnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 3, 'D', 3],[172.0, 2, 'D', 3]

EuS
###Unconventional Planar Hall Effect in Exchange-Coupled Topological Insulator-Ferromagnetic Insulator Heterostructures|David Rakhmilevich,Fei Wang,Weiwei Zhao,Moses H. W. Chan,Jagadeesh S. Moodera,Chaoxing Liu,Cui-Zu Chang###
(1581541, 1581542)
 Here we report on the first experimental observation of anunconventional planar Hall effect (PHE) and an electrically gate-tunablehysteretic planar magnetoresistance (PMR) in EuS/T<missing VAR>I heterostructures, in whichEuS is a ferromagnetic insulator (FM<missing VAR>I) with an in-plane magnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 3, 'D', 3],[164.0, 2, 'D', 3]

I
###Unconventional Planar Hall Effect in Exchange-Coupled Topological Insulator-Ferromagnetic Insulator Heterostructures|David Rakhmilevich,Fei Wang,Weiwei Zhao,Moses H. W. Chan,Jagadeesh S. Moodera,Chaoxing Liu,Cui-Zu Chang###
(1581545, 1581545)
 Here we report on the first experimental observation of anunconventional planar Hall effect (PHE) and an electrically gate-tunablehysteretic planar magnetoresistance (PMR) in EuS/T<missing VAR>I heterostructures, in whichEuS is a ferromagnetic insulator (FM<missing VAR>I) with an in-plane magnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 3, 'D', 3],[161.0, 2, 'D', 3]

EuS
###Unconventional Planar Hall Effect in Exchange-Coupled Topological Insulator-Ferromagnetic Insulator Heterostructures|David Rakhmilevich,Fei Wang,Weiwei Zhao,Moses H. W. Chan,Jagadeesh S. Moodera,Chaoxing Liu,Cui-Zu Chang###
(1581555, 1581556)
 Here we report on the first experimental observation of anunconventional planar Hall effect (PHE) and an electrically gate-tunablehysteretic planar magnetoresistance (PMR) in EuS/T<missing VAR>I heterostructures, in whichEuS is a ferromagnetic insulator (FM<missing VAR>I) with an in-plane magnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 3, 'D', 3],[150.0, 2, 'D', 3]

F
###Unconventional Planar Hall Effect in Exchange-Coupled Topological Insulator-Ferromagnetic Insulator Heterostructures|David Rakhmilevich,Fei Wang,Weiwei Zhao,Moses H. W. Chan,Jagadeesh S. Moodera,Chaoxing Liu,Cui-Zu Chang###
(1581567, 1581567)
 Here we report on the first experimental observation of anunconventional planar Hall effect (PHE) and an electrically gate-tunablehysteretic planar magnetoresistance (PMR) in EuS/T<missing VAR>I heterostructures, in whichEuS is a ferromagnetic insulator (FM<missing VAR>I) with an in-plane magnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 3, 'D', 3],[139.0, 2, 'D', 3]

I
###Unconventional Planar Hall Effect in Exchange-Coupled Topological Insulator-Ferromagnetic Insulator Heterostructures|David Rakhmilevich,Fei Wang,Weiwei Zhao,Moses H. W. Chan,Jagadeesh S. Moodera,Chaoxing Liu,Cui-Zu Chang###
(1581569, 1581569)
 Here we report on the first experimental observation of anunconventional planar Hall effect (PHE) and an electrically gate-tunablehysteretic planar magnetoresistance (PMR) in EuS/T<missing VAR>I heterostructures, in whichEuS is a ferromagnetic insulator (FM<missing VAR>I) with an in-plane magnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 3, 'D', 3],[137.0, 2, 'D', 3]

In
###Unconventional Planar Hall Effect in Exchange-Coupled Topological Insulator-Ferromagnetic Insulator Heterostructures|David Rakhmilevich,Fei Wang,Weiwei Zhao,Moses H. W. Chan,Jagadeesh S. Moodera,Chaoxing Liu,Cui-Zu Chang###
(1581583, 1581583)
 In suchexchange-coupled FM<missing VAR>I/T<missing VAR>I heterostructures, we find a significant (suppressed)PHE<missing VAR> when the in-plane magnetic field is parallel (perpendicular) to theelectric current.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 3, 'D', 2],[123.0, 2, 'D', 2]

F
###Unconventional Planar Hall Effect in Exchange-Coupled Topological Insulator-Ferromagnetic Insulator Heterostructures|David Rakhmilevich,Fei Wang,Weiwei Zhao,Moses H. W. Chan,Jagadeesh S. Moodera,Chaoxing Liu,Cui-Zu Chang###
(1581592, 1581592)
 In suchexchange-coupled FM<missing VAR>I/T<missing VAR>I heterostructures, we find a significant (suppressed)PHE<missing VAR> when the in-plane magnetic field is parallel (perpendicular) to theelectric current.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 3, 'D', 2],[114.0, 2, 'D', 2]

I
###Unconventional Planar Hall Effect in Exchange-Coupled Topological Insulator-Ferromagnetic Insulator Heterostructures|David Rakhmilevich,Fei Wang,Weiwei Zhao,Moses H. W. Chan,Jagadeesh S. Moodera,Chaoxing Liu,Cui-Zu Chang###
(1581594, 1581594)
 In suchexchange-coupled FM<missing VAR>I/T<missing VAR>I heterostructures, we find a significant (suppressed)PHE<missing VAR> when the in-plane magnetic field is parallel (perpendicular) to theelectric current.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 3, 'D', 2],[112.0, 2, 'D', 2]

I
###Unconventional Planar Hall Effect in Exchange-Coupled Topological Insulator-Ferromagnetic Insulator Heterostructures|David Rakhmilevich,Fei Wang,Weiwei Zhao,Moses H. W. Chan,Jagadeesh S. Moodera,Chaoxing Liu,Cui-Zu Chang###
(1581597, 1581597)
 In suchexchange-coupled FM<missing VAR>I/T<missing VAR>I heterostructures, we find a significant (suppressed)PHE<missing VAR> when the in-plane magnetic field is parallel (perpendicular) to theelectric current.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 3, 'D', 2],[109.0, 2, 'D', 2]

PH
###Unconventional Planar Hall Effect in Exchange-Coupled Topological Insulator-Ferromagnetic Insulator Heterostructures|David Rakhmilevich,Fei Wang,Weiwei Zhao,Moses H. W. Chan,Jagadeesh S. Moodera,Chaoxing Liu,Cui-Zu Chang###
(1581615, 1581616)
 In suchexchange-coupled FM<missing VAR>I/T<missing VAR>I heterostructures, we find a significant (suppressed)PHE<missing VAR> when the in-plane magnetic field is parallel (perpendicular) to theelectric current.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 3, 'D', 2],[90.0, 2, 'D', 2]

PH
###Unconventional Planar Hall Effect in Exchange-Coupled Topological Insulator-Ferromagnetic Insulator Heterostructures|David Rakhmilevich,Fei Wang,Weiwei Zhao,Moses H. W. Chan,Jagadeesh S. Moodera,Chaoxing Liu,Cui-Zu Chang###
(1581665, 1581666)
 This behavior differs from previous observations of the PHE<missing VAR>in ferromagnets and semiconductors.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 3, 'D', 1],[40.0, 2, 'D', 1]

I
###Unconventional Planar Hall Effect in Exchange-Coupled Topological Insulator-Ferromagnetic Insulator Heterostructures|David Rakhmilevich,Fei Wang,Weiwei Zhao,Moses H. W. Chan,Jagadeesh S. Moodera,Chaoxing Liu,Cui-Zu Chang###
(1581694, 1581694)
 Furthermore, as the thickness of the 3D T<missing VAR>Ifilms is reduced into the 2D limit, in which the Dirac SSs develop ahybridization gap, we find a suppression of the PHE<missing VAR> around the charge neutralpoint indicating the vital role of Dirac SSs in this phenomenon.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 3, 'D', 0],[12.0, 2, 'D', 0]

S
###Unconventional Planar Hall Effect in Exchange-Coupled Topological Insulator-Ferromagnetic Insulator Heterostructures|David Rakhmilevich,Fei Wang,Weiwei Zhao,Moses H. W. Chan,Jagadeesh S. Moodera,Chaoxing Liu,Cui-Zu Chang###
(1581719, 1581719)
 Furthermore, as the thickness of the 3D T<missing VAR>Ifilms is reduced into the 2D limit, in which the Dirac SSs develop ahybridization gap, we find a suppression of the PHE<missing VAR> around the charge neutralpoint indicating the vital role of Dirac SSs in this phenomenon.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 3, 'D', 0],[13.0, 2, 'D', 0]

PH
###Unconventional Planar Hall Effect in Exchange-Coupled Topological Insulator-Ferromagnetic Insulator Heterostructures|David Rakhmilevich,Fei Wang,Weiwei Zhao,Moses H. W. Chan,Jagadeesh S. Moodera,Chaoxing Liu,Cui-Zu Chang###
(1581744, 1581745)
 Furthermore, as the thickness of the 3D T<missing VAR>Ifilms is reduced into the 2D limit, in which the Dirac SSs develop ahybridization gap, we find a suppression of the PHE<missing VAR> around the charge neutralpoint indicating the vital role of Dirac SSs in this phenomenon.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 3, 'D', 0],[38.0, 2, 'D', 0]

S
###Unconventional Planar Hall Effect in Exchange-Coupled Topological Insulator-Ferromagnetic Insulator Heterostructures|David Rakhmilevich,Fei Wang,Weiwei Zhao,Moses H. W. Chan,Jagadeesh S. Moodera,Chaoxing Liu,Cui-Zu Chang###
(1581771, 1581771)
 Furthermore, as the thickness of the 3D T<missing VAR>Ifilms is reduced into the 2D limit, in which the Dirac SSs develop ahybridization gap, we find a suppression of the PHE<missing VAR> around the charge neutralpoint indicating the vital role of Dirac SSs in this phenomenon.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 3, 'D', 0],[65.0, 2, 'D', 0]

Ni
###Spin-dependent scattering and magnetic proximity effect in Ni-doped Co/Cu multilayers as a probe of atomic magnetism|Yu O Tykhonenko-Polishchuk,D M Polishchuk,T I Polek,D D Yaremkevych,A F Kravets,A I Tovstolytkin,A N Timoshevskii,V Korenivski###
(1581878, 1581878)
Spin-dependent scattering and magnetic proximity effect in Ni-doped Co/Cu multilayers as a probe of atomic magnetism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 15, 'at', 2]

Co/Cu
###Spin-dependent scattering and magnetic proximity effect in Ni-doped Co/Cu multilayers as a probe of atomic magnetism|Yu O Tykhonenko-Polishchuk,D M Polishchuk,T I Polek,D D Yaremkevych,A F Kravets,A I Tovstolytkin,A N Timoshevskii,V Korenivski###
(1581882, 1581884)
Spin-dependent scattering and magnetic proximity effect in Ni-doped Co/Cu multilayers as a probe of atomic magnetism.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[129.0, 15, 'at', 2]

Co/Cu
###Spin-dependent scattering and magnetic proximity effect in Ni-doped Co/Cu multilayers as a probe of atomic magnetism|Yu O Tykhonenko-Polishchuk,D M Polishchuk,T I Polek,D D Yaremkevych,A F Kravets,A I Tovstolytkin,A N Timoshevskii,V Korenivski###
(1581932, 1581934)
 We investigate the spin transport and ferromagnetic resonance properties ofgiant magnetoresistive (GMR) Co/Cu-Ni multilayers with variable levels of Nidoping in the Cu spacer.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[79.0, 15, 'at', 1]

Ni
###Spin-dependent scattering and magnetic proximity effect in Ni-doped Co/Cu multilayers as a probe of atomic magnetism|Yu O Tykhonenko-Polishchuk,D M Polishchuk,T I Polek,D D Yaremkevych,A F Kravets,A I Tovstolytkin,A N Timoshevskii,V Korenivski###
(1581936, 1581936)
 We investigate the spin transport and ferromagnetic resonance properties ofgiant magnetoresistive (GMR) Co/Cu-Ni multilayers with variable levels of Nidoping in the Cu spacer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 15, 'at', 1]

Ni
###Spin-dependent scattering and magnetic proximity effect in Ni-doped Co/Cu multilayers as a probe of atomic magnetism|Yu O Tykhonenko-Polishchuk,D M Polishchuk,T I Polek,D D Yaremkevych,A F Kravets,A I Tovstolytkin,A N Timoshevskii,V Korenivski###
(1581948, 1581948)
 We investigate the spin transport and ferromagnetic resonance properties ofgiant magnetoresistive (GMR) Co/Cu-Ni multilayers with variable levels of Nidoping in the Cu spacer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 15, 'at', 1]

Cu
###Spin-dependent scattering and magnetic proximity effect in Ni-doped Co/Cu multilayers as a probe of atomic magnetism|Yu O Tykhonenko-Polishchuk,D M Polishchuk,T I Polek,D D Yaremkevych,A F Kravets,A I Tovstolytkin,A N Timoshevskii,V Korenivski###
(1581957, 1581957)
 We investigate the spin transport and ferromagnetic resonance properties ofgiant magnetoresistive (GMR) Co/Cu-Ni multilayers with variable levels of Nidoping in the Cu spacer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 15, 'at', 1]

Ni
###Spin-dependent scattering and magnetic proximity effect in Ni-doped Co/Cu multilayers as a probe of atomic magnetism|Yu O Tykhonenko-Polishchuk,D M Polishchuk,T I Polek,D D Yaremkevych,A F Kravets,A I Tovstolytkin,A N Timoshevskii,V Korenivski###
(1581997, 1581997)
 We present an experimental evidence for amagnetic-to-diamagnetic transition in the atomic magnetic moment of Ni in theCu matrix for concentrations below 15 at.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 15, 'at', 0]

Cu
###Spin-dependent scattering and magnetic proximity effect in Ni-doped Co/Cu multilayers as a probe of atomic magnetism|Yu O Tykhonenko-Polishchuk,D M Polishchuk,T I Polek,D D Yaremkevych,A F Kravets,A I Tovstolytkin,A N Timoshevskii,V Korenivski###
(1582004, 1582004)
 We present an experimental evidence for amagnetic-to-diamagnetic transition in the atomic magnetic moment of Ni in theCu matrix for concentrations below 15 at.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 15, 'at', 0]

Ni
###Spin-dependent scattering and magnetic proximity effect in Ni-doped Co/Cu multilayers as a probe of atomic magnetism|Yu O Tykhonenko-Polishchuk,D M Polishchuk,T I Polek,D D Yaremkevych,A F Kravets,A I Tovstolytkin,A N Timoshevskii,V Korenivski###
(1582018, 1582018)
 % Ni.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 15, 'at', 1]

As
###Spin-dependent scattering and magnetic proximity effect in Ni-doped Co/Cu multilayers as a probe of atomic magnetism|Yu O Tykhonenko-Polishchuk,D M Polishchuk,T I Polek,D D Yaremkevych,A F Kravets,A I Tovstolytkin,A N Timoshevskii,V Korenivski###
(1582021, 1582021)
 As its concentration isincreased, Ni atoms turn into spin scattering centers, which is manifestedexperimentally as a step-like change in the GMR of the multilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 15, 'at', 2]

Ni
###Spin-dependent scattering and magnetic proximity effect in Ni-doped Co/Cu multilayers as a probe of atomic magnetism|Yu O Tykhonenko-Polishchuk,D M Polishchuk,T I Polek,D D Yaremkevych,A F Kravets,A I Tovstolytkin,A N Timoshevskii,V Korenivski###
(1582033, 1582033)
 As its concentration isincreased, Ni atoms turn into spin scattering centers, which is manifestedexperimentally as a step-like change in the GMR of the multilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 15, 'at', 2]

Cu
###Spin-dependent scattering and magnetic proximity effect in Ni-doped Co/Cu multilayers as a probe of atomic magnetism|Yu O Tykhonenko-Polishchuk,D M Polishchuk,T I Polek,D D Yaremkevych,A F Kravets,A I Tovstolytkin,A N Timoshevskii,V Korenivski###
(1582101, 1582101)
 Thisbehavior is observed in multilayers with gradient-doped Cu spacers, where onlythe inner region was doped with Ni.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 15, 'at', 3]

Ni
###Spin-dependent scattering and magnetic proximity effect in Ni-doped Co/Cu multilayers as a probe of atomic magnetism|Yu O Tykhonenko-Polishchuk,D M Polishchuk,T I Polek,D D Yaremkevych,A F Kravets,A I Tovstolytkin,A N Timoshevskii,V Korenivski###
(1582123, 1582123)
 Thisbehavior is observed in multilayers with gradient-doped Cu spacers, where onlythe inner region was doped with Ni.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 15, 'at', 3]

In
###Spin-dependent scattering and magnetic proximity effect in Ni-doped Co/Cu multilayers as a probe of atomic magnetism|Yu O Tykhonenko-Polishchuk,D M Polishchuk,T I Polek,D D Yaremkevych,A F Kravets,A I Tovstolytkin,A N Timoshevskii,V Korenivski###
(1582126, 1582126)
 In the uniformly doped spacers the GMRdecreases monotonously with increasing Ni content, indicating that Ni atoms aremagnetic and act as spin relaxation centers in the entire dopant-concentrationrange studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 15, 'at', 4]

Ni
###Spin-dependent scattering and magnetic proximity effect in Ni-doped Co/Cu multilayers as a probe of atomic magnetism|Yu O Tykhonenko-Polishchuk,D M Polishchuk,T I Polek,D D Yaremkevych,A F Kravets,A I Tovstolytkin,A N Timoshevskii,V Korenivski###
(1582151, 1582151)
 In the uniformly doped spacers the GMRdecreases monotonously with increasing Ni content, indicating that Ni atoms aremagnetic and act as spin relaxation centers in the entire dopant-concentrationrange studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 15, 'at', 4]

Ni
###Spin-dependent scattering and magnetic proximity effect in Ni-doped Co/Cu multilayers as a probe of atomic magnetism|Yu O Tykhonenko-Polishchuk,D M Polishchuk,T I Polek,D D Yaremkevych,A F Kravets,A I Tovstolytkin,A N Timoshevskii,V Korenivski###
(1582160, 1582160)
 In the uniformly doped spacers the GMRdecreases monotonously with increasing Ni content, indicating that Ni atoms aremagnetic and act as spin relaxation centers in the entire dopant-concentrationrange studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 15, 'at', 4]

Ni
###Spin-dependent scattering and magnetic proximity effect in Ni-doped Co/Cu multilayers as a probe of atomic magnetism|Yu O Tykhonenko-Polishchuk,D M Polishchuk,T I Polek,D D Yaremkevych,A F Kravets,A I Tovstolytkin,A N Timoshevskii,V Korenivski###
(1582316, 1582316)
 The observed magnetic phase transition isfully supported by our detailed ab-initio calculations, taking intoconsideration structural relaxation in the system as well as potential Niclustering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[303.0, 15, 'at', 6]

ZrSiS
###Surface Termination Dependent Quasiparticle Scattering Interference and Magneto-transport Study on ZrSiS|Chih-Chuan Su,Chi-Sheng Li,Tzu-Cheng Wang,Syu-You Guan,Raman Sankar,Fangcheng Chou,Chia-Seng Chang,Wei-Li Lee,Guang-Yu Guo,Tien-Ming Chuang###
(1582425, 1582427)
Surface Termination Dependent Quasiparticle Scattering Interference and Magneto-transport Study on ZrSiS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZrSiS
###Surface Termination Dependent Quasiparticle Scattering Interference and Magneto-transport Study on ZrSiS|Chih-Chuan Su,Chi-Sheng Li,Tzu-Cheng Wang,Syu-You Guan,Raman Sankar,Fangcheng Chou,Chia-Seng Chang,Wei-Li Lee,Guang-Yu Guo,Tien-Ming Chuang###
(1582498, 1582500)
 Here,we report a combined study on ZrSiS by density functional theory calculation,scanning tunneling microscope (STM) and magneto-transport measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Surface Termination Dependent Quasiparticle Scattering Interference and Magneto-transport Study on ZrSiS|Chih-Chuan Su,Chi-Sheng Li,Tzu-Cheng Wang,Syu-You Guan,Raman Sankar,Fangcheng Chou,Chia-Seng Chang,Wei-Li Lee,Guang-Yu Guo,Tien-Ming Chuang###
(1582521, 1582521)
 Here,we report a combined study on ZrSiS by density functional theory calculation,scanning tunneling microscope (STM) and magneto-transport measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Surface Termination Dependent Quasiparticle Scattering Interference and Magneto-transport Study on ZrSiS|Chih-Chuan Su,Chi-Sheng Li,Tzu-Cheng Wang,Syu-You Guan,Raman Sankar,Fangcheng Chou,Chia-Seng Chang,Wei-Li Lee,Guang-Yu Guo,Tien-Ming Chuang###
(1582537, 1582537)
 Our STMmeasurements reveal the spectroscopic signatures of a diamond-shaped Dirac bulkband and a surface band on two types of cleaved surfaces as well as a spinpolarized surface band at barGamma at E0.6eV on S-surface, consistentwith our band calculation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Surface Termination Dependent Quasiparticle Scattering Interference and Magneto-transport Study on ZrSiS|Chih-Chuan Su,Chi-Sheng Li,Tzu-Cheng Wang,Syu-You Guan,Raman Sankar,Fangcheng Chou,Chia-Seng Chang,Wei-Li Lee,Guang-Yu Guo,Tien-Ming Chuang###
(1582614, 1582614)
 Our STMmeasurements reveal the spectroscopic signatures of a diamond-shaped Dirac bulkband and a surface band on two types of cleaved surfaces as well as a spinpolarized surface band at barGamma at E0.6eV on S-surface, consistentwith our band calculation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Surface Termination Dependent Quasiparticle Scattering Interference and Magneto-transport Study on ZrSiS|Chih-Chuan Su,Chi-Sheng Li,Tzu-Cheng Wang,Syu-You Guan,Raman Sankar,Fangcheng Chou,Chia-Seng Chang,Wei-Li Lee,Guang-Yu Guo,Tien-Ming Chuang###
(1582618, 1582618)
 Our STMmeasurements reveal the spectroscopic signatures of a diamond-shaped Dirac bulkband and a surface band on two types of cleaved surfaces as well as a spinpolarized surface band at barGamma at E0.6eV on S-surface, consistentwith our band calculation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Surface Termination Dependent Quasiparticle Scattering Interference and Magneto-transport Study on ZrSiS|Chih-Chuan Su,Chi-Sheng Li,Tzu-Cheng Wang,Syu-You Guan,Raman Sankar,Fangcheng Chou,Chia-Seng Chang,Wei-Li Lee,Guang-Yu Guo,Tien-Ming Chuang###
(1582789, 1582789)
 The extracted non-orbital magnetoresistance(MR) contribution D<missing VAR>(theta, H) yields a nearly H-linear dependence, which isattributed to the intrinsic MR in ZrSiS.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Surface Termination Dependent Quasiparticle Scattering Interference and Magneto-transport Study on ZrSiS|Chih-Chuan Su,Chi-Sheng Li,Tzu-Cheng Wang,Syu-You Guan,Raman Sankar,Fangcheng Chou,Chia-Seng Chang,Wei-Li Lee,Guang-Yu Guo,Tien-Ming Chuang###
(1582798, 1582798)
 The extracted non-orbital magnetoresistance(MR) contribution D<missing VAR>(theta, H) yields a nearly H-linear dependence, which isattributed to the intrinsic MR in ZrSiS.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZrSiS
###Surface Termination Dependent Quasiparticle Scattering Interference and Magneto-transport Study on ZrSiS|Chih-Chuan Su,Chi-Sheng Li,Tzu-Cheng Wang,Syu-You Guan,Raman Sankar,Fangcheng Chou,Chia-Seng Chang,Wei-Li Lee,Guang-Yu Guo,Tien-Ming Chuang###
(1582823, 1582825)
 The extracted non-orbital magnetoresistance(MR) contribution D<missing VAR>(theta, H) yields a nearly H-linear dependence, which isattributed to the intrinsic MR in ZrSiS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Zr
###Surface Termination Dependent Quasiparticle Scattering Interference and Magneto-transport Study on ZrSiS|Chih-Chuan Su,Chi-Sheng Li,Tzu-Cheng Wang,Syu-You Guan,Raman Sankar,Fangcheng Chou,Chia-Seng Chang,Wei-Li Lee,Guang-Yu Guo,Tien-Ming Chuang###
(1582857, 1582857)
 Our results demonstrate the uniqueDirac line nodes phase and the dominating role of Zr-d<missing VAR> orbital on theelectronic structure in ZrSiS and the related compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ZrSiS
###Surface Termination Dependent Quasiparticle Scattering Interference and Magneto-transport Study on ZrSiS|Chih-Chuan Su,Chi-Sheng Li,Tzu-Cheng Wang,Syu-You Guan,Raman Sankar,Fangcheng Chou,Chia-Seng Chang,Wei-Li Lee,Guang-Yu Guo,Tien-Ming Chuang###
(1582874, 1582876)
 Our results demonstrate the uniqueDirac line nodes phase and the dominating role of Zr-d<missing VAR> orbital on theelectronic structure in ZrSiS and the related compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CeRhIn5
###Non-monotonic pressure dependence of high-field nematicity and magnetism in CeRhIn$_5$|Toni Helm,Audrey D. Grockowiak,Fedor F. Balakirev,John Singleton,Jonathan B. Betts,Kent R. Shirer,Markus König,Tobias Förster,Eric D. Bauer,Filip Ronning,Stanley W. Tozer,Philip J. W. Moll###
(1582917, 1582920)
Non-monotonic pressure dependence of high-field nematicity and magnetism in CeRhIn5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0.7142857142857143,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 23, ',', 1],[134.0, 50, ',', 2],[158.0, 28, ',', 3]

CeRhIn5
###Non-monotonic pressure dependence of high-field nematicity and magnetism in CeRhIn$_5$|Toni Helm,Audrey D. Grockowiak,Fedor F. Balakirev,John Singleton,Jonathan B. Betts,Kent R. Shirer,Markus König,Tobias Förster,Eric D. Bauer,Filip Ronning,Stanley W. Tozer,Philip J. W. Moll###
(1582923, 1582926)
 CeRhIn5 provides a textbook example of quantum criticality in a heavyfermion system Pressure suppresses local-moment antiferromagnetic (AFM) orderand induces superconductivity in a dome around the associated quantum criticalpoint (Q<missing VAR>CP) near pc approx 23,kbar.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0.7142857142857143,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 23, ',', 0],[128.0, 50, ',', 1],[152.0, 28, ',', 2]

F
###Non-monotonic pressure dependence of high-field nematicity and magnetism in CeRhIn$_5$|Toni Helm,Audrey D. Grockowiak,Fedor F. Balakirev,John Singleton,Jonathan B. Betts,Kent R. Shirer,Markus König,Tobias Förster,Eric D. Bauer,Filip Ronning,Stanley W. Tozer,Philip J. W. Moll###
(1582965, 1582965)
 CeRhIn5 provides a textbook example of quantum criticality in a heavyfermion system Pressure suppresses local-moment antiferromagnetic (AFM) orderand induces superconductivity in a dome around the associated quantum criticalpoint (Q<missing VAR>CP) near pc approx 23,kbar.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 23, ',', 0],[89.0, 50, ',', 1],[113.0, 28, ',', 2]

P
###Non-monotonic pressure dependence of high-field nematicity and magnetism in CeRhIn$_5$|Toni Helm,Audrey D. Grockowiak,Fedor F. Balakirev,John Singleton,Jonathan B. Betts,Kent R. Shirer,Markus König,Tobias Förster,Eric D. Bauer,Filip Ronning,Stanley W. Tozer,Philip J. W. Moll###
(1583000, 1583000)
 CeRhIn5 provides a textbook example of quantum criticality in a heavyfermion system Pressure suppresses local-moment antiferromagnetic (AFM) orderand induces superconductivity in a dome around the associated quantum criticalpoint (Q<missing VAR>CP) near pc approx 23,kbar.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 23, ',', 0],[54.0, 50, ',', 1],[78.0, 28, ',', 2]

F
###Non-monotonic pressure dependence of high-field nematicity and magnetism in CeRhIn$_5$|Toni Helm,Audrey D. Grockowiak,Fedor F. Balakirev,John Singleton,Jonathan B. Betts,Kent R. Shirer,Markus König,Tobias Förster,Eric D. Bauer,Filip Ronning,Stanley W. Tozer,Philip J. W. Moll###
(1583029, 1583029)
 Strong magnetic fields also suppressthe AFM<missing VAR> order at a field-induced Q<missing VAR>CP at Brm c<missing VAR>approx 50,T<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 23, ',', 1],[25.0, 50, ',', 0],[49.0, 28, ',', 1]

CP
###Non-monotonic pressure dependence of high-field nematicity and magnetism in CeRhIn$_5$|Toni Helm,Audrey D. Grockowiak,Fedor F. Balakirev,John Singleton,Jonathan B. Betts,Kent R. Shirer,Markus König,Tobias Förster,Eric D. Bauer,Filip Ronning,Stanley W. Tozer,Philip J. W. Moll###
(1583043, 1583044)
 Strong magnetic fields also suppressthe AFM<missing VAR> order at a field-induced Q<missing VAR>CP at Brm c<missing VAR>approx 50,T<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 23, ',', 1],[10.0, 50, ',', 0],[34.0, 28, ',', 1]

B
###Non-monotonic pressure dependence of high-field nematicity and magnetism in CeRhIn$_5$|Toni Helm,Audrey D. Grockowiak,Fedor F. Balakirev,John Singleton,Jonathan B. Betts,Kent R. Shirer,Markus König,Tobias Förster,Eric D. Bauer,Filip Ronning,Stanley W. Tozer,Philip J. W. Moll###
(1583048, 1583048)
 Strong magnetic fields also suppressthe AFM<missing VAR> order at a field-induced Q<missing VAR>CP at Brm c<missing VAR>approx 50,T<missing VAR>.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 23, ',', 1],[6.0, 50, ',', 0],[30.0, 28, ',', 1]

In
###Non-monotonic pressure dependence of high-field nematicity and magnetism in CeRhIn$_5$|Toni Helm,Audrey D. Grockowiak,Fedor F. Balakirev,John Singleton,Jonathan B. Betts,Kent R. Shirer,Markus König,Tobias Förster,Eric D. Bauer,Filip Ronning,Stanley W. Tozer,Philip J. W. Moll###
(1583059, 1583059)
 In itsvicinity, a nematic phase at Bapprox 28,T<missing VAR> characterized by a largein-plane resistivity anisotropy emerges.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 23, ',', 2],[5.0, 50, ',', 1],[19.0, 28, ',', 0]

B
###Non-monotonic pressure dependence of high-field nematicity and magnetism in CeRhIn$_5$|Toni Helm,Audrey D. Grockowiak,Fedor F. Balakirev,John Singleton,Jonathan B. Betts,Kent R. Shirer,Markus König,Tobias Förster,Eric D. Bauer,Filip Ronning,Stanley W. Tozer,Philip J. W. Moll###
(1583075, 1583075)
 In itsvicinity, a nematic phase at Bapprox 28,T<missing VAR> characterized by a largein-plane resistivity anisotropy emerges.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 23, ',', 2],[21.0, 50, ',', 1],[3.0, 28, ',', 0]

As
###Non-monotonic pressure dependence of high-field nematicity and magnetism in CeRhIn$_5$|Toni Helm,Audrey D. Grockowiak,Fedor F. Balakirev,John Singleton,Jonathan B. Betts,Kent R. Shirer,Markus König,Tobias Förster,Eric D. Bauer,Filip Ronning,Stanley W. Tozer,Philip J. W. Moll###
(1583136, 1583136)
 As pressure increases, the nematic transition shifts to higherfields, until it vanishes just below p<missing VAR>rm c<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 23, ',', 4],[82.0, 50, ',', 3],[58.0, 28, ',', 2]

CeRhIn5
###Non-monotonic pressure dependence of high-field nematicity and magnetism in CeRhIn$_5$|Toni Helm,Audrey D. Grockowiak,Fedor F. Balakirev,John Singleton,Jonathan B. Betts,Kent R. Shirer,Markus König,Tobias Förster,Eric D. Bauer,Filip Ronning,Stanley W. Tozer,Philip J. W. Moll###
(1583279, 1583282)
We reveal a strongly non-mean-field-like phase diagram, much richer than thecommon local-moment description of CeRhIn5 would suggest.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0.7142857142857143,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[269.0, 23, ',', 6],[225.0, 50, ',', 5],[201.0, 28, ',', 4]

I
###Nanomechanical characterization of quantum interference in a topological insulator nanowire|Minjin Kim,Jihwan Kim,Yasen Hou,Dong Yu,Yong-Joo Doh,Bongsoo Kim,Kun Woo Kim,Junho Suh###
(1583347, 1583347)
 The discovery of two-dimensional gapless Dirac fermions in graphene andtopological insulators (T<missing VAR>I) has sparked extensive ongoing research towardapplications of their unique electronic properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Nanomechanical characterization of quantum interference in a topological insulator nanowire|Minjin Kim,Jihwan Kim,Yasen Hou,Dong Yu,Yong-Joo Doh,Bongsoo Kim,Kun Woo Kim,Junho Suh###
(1583449, 1583449)
 In T<missing VAR>Inanowires, the gapless surface states exhibit Aharonov-Bohm (AB) oscillationsin conductance, with this quantum interference effect accompanying a change inthe number of transverse one-dimensional modes in transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Nanomechanical characterization of quantum interference in a topological insulator nanowire|Minjin Kim,Jihwan Kim,Yasen Hou,Dong Yu,Yong-Joo Doh,Bongsoo Kim,Kun Woo Kim,Junho Suh###
(1583452, 1583452)
 In T<missing VAR>Inanowires, the gapless surface states exhibit Aharonov-Bohm (AB) oscillationsin conductance, with this quantum interference effect accompanying a change inthe number of transverse one-dimensional modes in transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Nanomechanical characterization of quantum interference in a topological insulator nanowire|Minjin Kim,Jihwan Kim,Yasen Hou,Dong Yu,Yong-Joo Doh,Bongsoo Kim,Kun Woo Kim,Junho Suh###
(1583474, 1583474)
 In T<missing VAR>Inanowires, the gapless surface states exhibit Aharonov-Bohm (AB) oscillationsin conductance, with this quantum interference effect accompanying a change inthe number of transverse one-dimensional modes in transport.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Nanomechanical characterization of quantum interference in a topological insulator nanowire|Minjin Kim,Jihwan Kim,Yasen Hou,Dong Yu,Yong-Joo Doh,Bongsoo Kim,Kun Woo Kim,Junho Suh###
(1583540, 1583540)
 Thus, while thedensity of states (D<missing VAR>OS) of such nanowires is expected to show such ABoscillation, this effect has yet to be observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Nanomechanical characterization of quantum interference in a topological insulator nanowire|Minjin Kim,Jihwan Kim,Yasen Hou,Dong Yu,Yong-Joo Doh,Bongsoo Kim,Kun Woo Kim,Junho Suh###
(1583560, 1583560)
 Thus, while thedensity of states (D<missing VAR>OS) of such nanowires is expected to show such ABoscillation, this effect has yet to be observed.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Nanomechanical characterization of quantum interference in a topological insulator nanowire|Minjin Kim,Jihwan Kim,Yasen Hou,Dong Yu,Yong-Joo Doh,Bongsoo Kim,Kun Woo Kim,Junho Suh###
(1583598, 1583598)
 Here, we adopt nanomechanicalmeasurements that reveal AB oscillations in the D<missing VAR>OS of a topological insulator.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OS
###Nanomechanical characterization of quantum interference in a topological insulator nanowire|Minjin Kim,Jihwan Kim,Yasen Hou,Dong Yu,Yong-Joo Doh,Bongsoo Kim,Kun Woo Kim,Junho Suh###
(1583607, 1583608)
 Here, we adopt nanomechanicalmeasurements that reveal AB oscillations in the D<missing VAR>OS of a topological insulator.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Nanomechanical characterization of quantum interference in a topological insulator nanowire|Minjin Kim,Jihwan Kim,Yasen Hou,Dong Yu,Yong-Joo Doh,Bongsoo Kim,Kun Woo Kim,Junho Suh###
(1583623, 1583623)
The T<missing VAR>I nanowire under study is an electromechanical resonator embedded in anelectrical circuit, and quantum capacitance effects from D<missing VAR>OS oscillationmodulate the circuit capacitance thereby altering the spring constant togenerate mechanical resonant frequency shifts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OS
###Nanomechanical characterization of quantum interference in a topological insulator nanowire|Minjin Kim,Jihwan Kim,Yasen Hou,Dong Yu,Yong-Joo Doh,Bongsoo Kim,Kun Woo Kim,Junho Suh###
(1583662, 1583663)
The T<missing VAR>I nanowire under study is an electromechanical resonator embedded in anelectrical circuit, and quantum capacitance effects from D<missing VAR>OS oscillationmodulate the circuit capacitance thereby altering the spring constant togenerate mechanical resonant frequency shifts.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OS
###Nanomechanical characterization of quantum interference in a topological insulator nanowire|Minjin Kim,Jihwan Kim,Yasen Hou,Dong Yu,Yong-Joo Doh,Bongsoo Kim,Kun Woo Kim,Junho Suh###
(1583720, 1583721)
 Detection of the quantumcapacitance effects from surface-state D<missing VAR>OS is facilitated by the smalleffective capacitances and high quality factors of nanomechanical resonators,and as such the present technique could be extended to study diverse quantummaterials at nanoscale.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BSN
###Low Barrier Magnet Design for Efficient Hardware Binary Stochastic Neurons|Orchi Hassan,Rafatul Faria,Kerem Y. Camsari,Jonathan Z. Sun,Supriyo Datta###
(1583824, 1583826)
 Binary stochastic neurons (BSNs) form an integral part of many machinelearning algorithms, motivating the development of hardware accelerators forthis complex function.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BSN
###Low Barrier Magnet Design for Efficient Hardware Binary Stochastic Neurons|Orchi Hassan,Rafatul Faria,Kerem Y. Camsari,Jonathan Z. Sun,Supriyo Datta###
(1583884, 1583886)
 It has been recognized that hardware BSNs<missing VAR> can beimplemented using low barrier magnets (LBMs) by minimally modifyingpresent-day magnetoresistive random access memory (MRAM) devices.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BSN
###Low Barrier Magnet Design for Efficient Hardware Binary Stochastic Neurons|Orchi Hassan,Rafatul Faria,Kerem Y. Camsari,Jonathan Z. Sun,Supriyo Datta###
(1583965, 1583967)
 A crucialparameter that determines the response of these LBM based BSN designs is theemphcorrelation time of magnetization, tauc<missing VAR>.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Low Barrier Magnet Design for Efficient Hardware Binary Stochastic Neurons|Orchi Hassan,Rafatul Faria,Kerem Y. Camsari,Jonathan Z. Sun,Supriyo Datta###
(1583990, 1583990)
 In this letter, we showthat for magnets with low energy barriers (Delta approx kBT and below),circular disk magnets with in-plane magnetic anisotropy (IM<missing VAR>A) lead to tauc<missing VAR>values that are two orders of magnitude smaller compared to tauc<missing VAR> formagnets having perpendicular magnetic anisotropy (PM<missing VAR>A) and provide analyticaldescriptions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Low Barrier Magnet Design for Efficient Hardware Binary Stochastic Neurons|Orchi Hassan,Rafatul Faria,Kerem Y. Camsari,Jonathan Z. Sun,Supriyo Datta###
(1584049, 1584049)
 In this letter, we showthat for magnets with low energy barriers (Delta approx kBT and below),circular disk magnets with in-plane magnetic anisotropy (IM<missing VAR>A) lead to tauc<missing VAR>values that are two orders of magnitude smaller compared to tauc<missing VAR> formagnets having perpendicular magnetic anisotropy (PM<missing VAR>A) and provide analyticaldescriptions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Low Barrier Magnet Design for Efficient Hardware Binary Stochastic Neurons|Orchi Hassan,Rafatul Faria,Kerem Y. Camsari,Jonathan Z. Sun,Supriyo Datta###
(1584099, 1584099)
 In this letter, we showthat for magnets with low energy barriers (Delta approx kBT and below),circular disk magnets with in-plane magnetic anisotropy (IM<missing VAR>A) lead to tauc<missing VAR>values that are two orders of magnitude smaller compared to tauc<missing VAR> formagnets having perpendicular magnetic anisotropy (PM<missing VAR>A) and provide analyticaldescriptions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Low Barrier Magnet Design for Efficient Hardware Binary Stochastic Neurons|Orchi Hassan,Rafatul Faria,Kerem Y. Camsari,Jonathan Z. Sun,Supriyo Datta###
(1584167, 1584167)
 We show that this striking difference in tauc<missing VAR> is due to aprecession-like fluctuation mechanism that is enabled by the largedemagnetization field in IM<missing VAR>A magnets.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BSN
###Low Barrier Magnet Design for Efficient Hardware Binary Stochastic Neurons|Orchi Hassan,Rafatul Faria,Kerem Y. Camsari,Jonathan Z. Sun,Supriyo Datta###
(1584197, 1584199)
 We provide a detailed energy-delayperformance evaluation of previously proposed BSN designs based onSpin-Orbit-Torque (SOT) MRAM<missing VAR> and Spin-Transfer-Torque (STT) MRAM<missing VAR> employing lowbarrier circular IM<missing VAR>A magnets by SPICE<missing VAR> simulations.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Low Barrier Magnet Design for Efficient Hardware Binary Stochastic Neurons|Orchi Hassan,Rafatul Faria,Kerem Y. Camsari,Jonathan Z. Sun,Supriyo Datta###
(1584215, 1584216)
 We provide a detailed energy-delayperformance evaluation of previously proposed BSN designs based onSpin-Orbit-Torque (SOT) MRAM<missing VAR> and Spin-Transfer-Torque (STT) MRAM<missing VAR> employing lowbarrier circular IM<missing VAR>A magnets by SPICE<missing VAR> simulations.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Low Barrier Magnet Design for Efficient Hardware Binary Stochastic Neurons|Orchi Hassan,Rafatul Faria,Kerem Y. Camsari,Jonathan Z. Sun,Supriyo Datta###
(1584234, 1584234)
 We provide a detailed energy-delayperformance evaluation of previously proposed BSN designs based onSpin-Orbit-Torque (SOT) MRAM<missing VAR> and Spin-Transfer-Torque (STT) MRAM<missing VAR> employing lowbarrier circular IM<missing VAR>A magnets by SPICE<missing VAR> simulations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Low Barrier Magnet Design for Efficient Hardware Binary Stochastic Neurons|Orchi Hassan,Rafatul Faria,Kerem Y. Camsari,Jonathan Z. Sun,Supriyo Datta###
(1584253, 1584253)
 We provide a detailed energy-delayperformance evaluation of previously proposed BSN designs based onSpin-Orbit-Torque (SOT) MRAM<missing VAR> and Spin-Transfer-Torque (STT) MRAM<missing VAR> employing lowbarrier circular IM<missing VAR>A magnets by SPICE<missing VAR> simulations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SPIC
###Low Barrier Magnet Design for Efficient Hardware Binary Stochastic Neurons|Orchi Hassan,Rafatul Faria,Kerem Y. Camsari,Jonathan Z. Sun,Supriyo Datta###
(1584261, 1584264)
 We provide a detailed energy-delayperformance evaluation of previously proposed BSN designs based onSpin-Orbit-Torque (SOT) MRAM<missing VAR> and Spin-Transfer-Torque (STT) MRAM<missing VAR> employing lowbarrier circular IM<missing VAR>A magnets by SPICE<missing VAR> simulations.
Featurization terminated normally.
0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BSN
###Low Barrier Magnet Design for Efficient Hardware Binary Stochastic Neurons|Orchi Hassan,Rafatul Faria,Kerem Y. Camsari,Jonathan Z. Sun,Supriyo Datta###
(1584310, 1584312)
 The designs exhibit sub-nsresponse times leading to energy requirements of sima few fJ to evaluate theBSN function, orders of magnitude lower than digital CM<missing VAR>OS implementations witha much larger footprint.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Low Barrier Magnet Design for Efficient Hardware Binary Stochastic Neurons|Orchi Hassan,Rafatul Faria,Kerem Y. Camsari,Jonathan Z. Sun,Supriyo Datta###
(1584329, 1584329)
 The designs exhibit sub-nsresponse times leading to energy requirements of sima few fJ to evaluate theBSN function, orders of magnitude lower than digital CM<missing VAR>OS implementations witha much larger footprint.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OS
###Low Barrier Magnet Design for Efficient Hardware Binary Stochastic Neurons|Orchi Hassan,Rafatul Faria,Kerem Y. Camsari,Jonathan Z. Sun,Supriyo Datta###
(1584331, 1584332)
 The designs exhibit sub-nsresponse times leading to energy requirements of sima few fJ to evaluate theBSN function, orders of magnitude lower than digital CM<missing VAR>OS implementations witha much larger footprint.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Low Barrier Magnet Design for Efficient Hardware Binary Stochastic Neurons|Orchi Hassan,Rafatul Faria,Kerem Y. Camsari,Jonathan Z. Sun,Supriyo Datta###
(1584365, 1584365)
 While modern MRAM<missing VAR> technology is based on PM<missing VAR>A magnets,results in this paper suggest that low barrier circular IM<missing VAR>A magnets may be moresuitable for this application.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Low Barrier Magnet Design for Efficient Hardware Binary Stochastic Neurons|Orchi Hassan,Rafatul Faria,Kerem Y. Camsari,Jonathan Z. Sun,Supriyo Datta###
(1584391, 1584391)
 While modern MRAM<missing VAR> technology is based on PM<missing VAR>A magnets,results in this paper suggest that low barrier circular IM<missing VAR>A magnets may be moresuitable for this application.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PdCoO2
###$h/e$ Oscillations in Interlayer Transport of Delafossites|Carsten Putzke,Maja D. Bachmann,Philippa McGuinness,Elina Zhakina,Veronika Sunko,Marcin Konczykowski,Takashi Oka,Roderich Moessner,Ady Stern,Markus König,Seunghyun Khim,Andrew P. Mackenzie,Philip J. W. Moll###
(1584575, 1584578)
 Here we report anew type of phase coherent oscillation of the out-of-plane magnetoresistance inthe layered delafossites PdCoO2 and PtCoO2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PtCoO2
###$h/e$ Oscillations in Interlayer Transport of Delafossites|Carsten Putzke,Maja D. Bachmann,Philippa McGuinness,Elina Zhakina,Veronika Sunko,Marcin Konczykowski,Takashi Oka,Roderich Moessner,Ady Stern,Markus König,Seunghyun Khim,Andrew P. Mackenzie,Philip J. W. Moll###
(1584582, 1584585)
 Here we report anew type of phase coherent oscillation of the out-of-plane magnetoresistance inthe layered delafossites PdCoO2 and PtCoO2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###$h/e$ Oscillations in Interlayer Transport of Delafossites|Carsten Putzke,Maja D. Bachmann,Philippa McGuinness,Elina Zhakina,Veronika Sunko,Marcin Konczykowski,Takashi Oka,Roderich Moessner,Ady Stern,Markus König,Seunghyun Khim,Andrew P. Mackenzie,Philip J. W. Moll###
(1584709, 1584709)
 Thephase of the electron wave function in these crystals appears remarkably robustover macroscopic length scales exceeding 10mum<missing VAR> and persisting up to elevatedtemperatures of T<missing VAR>>50K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiMnSb
###Spin-charge conversion in NiMnSb Heusler alloy films|Zhenchao Wen,Zhiyong Qiu,Sebastian Tolle,Cosimo Gorini,Takeshi Seki,Dazhi Hou,Takahide Kubota,Ulrich Eckern,Eiji Saitoh,Koki Takanashi###
(1584839, 1584841)
Spin-charge conversion in NiMnSb Heusler alloy films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiMnSb
###Spin-charge conversion in NiMnSb Heusler alloy films|Zhenchao Wen,Zhiyong Qiu,Sebastian Tolle,Cosimo Gorini,Takeshi Seki,Dazhi Hou,Takahide Kubota,Ulrich Eckern,Eiji Saitoh,Koki Takanashi###
(1584990, 1584992)
Here, we report on the spin-charge conversion effect in the prototypicalHeusler alloy NiMnSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Y3Fe5O12
###Spin-charge conversion in NiMnSb Heusler alloy films|Zhenchao Wen,Zhiyong Qiu,Sebastian Tolle,Cosimo Gorini,Takeshi Seki,Dazhi Hou,Takahide Kubota,Ulrich Eckern,Eiji Saitoh,Koki Takanashi###
(1585005, 1585010)
 Spin currents were injected from Y3Fe5O12 into NiMnSbfilms by spin pumping, and then the spin currents were converted to chargecurrents via spin-orbit interactions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiMnSb
###Spin-charge conversion in NiMnSb Heusler alloy films|Zhenchao Wen,Zhiyong Qiu,Sebastian Tolle,Cosimo Gorini,Takeshi Seki,Dazhi Hou,Takahide Kubota,Ulrich Eckern,Eiji Saitoh,Koki Takanashi###
(1585014, 1585016)
 Spin currents were injected from Y3Fe5O12 into NiMnSbfilms by spin pumping, and then the spin currents were converted to chargecurrents via spin-orbit interactions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ds
###A Double Quantum Dot Spin Valve|Arunav Bordoloi,Valentina Zannier,Lucia Sorba,Christian Schönenberger,Andreas Baumgartner###
(1585789, 1585789)
 Here, we demonstrate all these points usingsemiconductor quantum dots (Q<missing VAR>Ds), individually spin-polarized by ferromagneticsplit-gates (FSGs).
EXCEPTION 3: IndexError for Ds
FS
[186.0, 27, '%', 2],[245.0, 80, '%', 3],[250.0, -90, '%', 3],[290.0, 80, '%', 4]

CeBi
###Magnetization and magneto-transport measurements on CeBi single crystals|Brinda Kuthanazhi,Na Hyun Jo,Li Xiang,Sergey L. Bud'ko,Paul C. Canfield###
(1586560, 1586561)
Magnetization and magneto-transport measurements on CeBi single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CeBi
###Magnetization and magneto-transport measurements on CeBi single crystals|Brinda Kuthanazhi,Na Hyun Jo,Li Xiang,Sergey L. Bud'ko,Paul C. Canfield###
(1586578, 1586579)
 We report the synthesis of CeBi single crystals out of Bi self flux and asystematic study of the magnetic and transport properties with varyingtemperature and applied magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi
###Magnetization and magneto-transport measurements on CeBi single crystals|Brinda Kuthanazhi,Na Hyun Jo,Li Xiang,Sergey L. Bud'ko,Paul C. Canfield###
(1586589, 1586589)
 We report the synthesis of CeBi single crystals out of Bi self flux and asystematic study of the magnetic and transport properties with varyingtemperature and applied magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Magnetization and magneto-transport measurements on CeBi single crystals|Brinda Kuthanazhi,Na Hyun Jo,Li Xiang,Sergey L. Bud'ko,Paul C. Canfield###
(1586640, 1586640)
 From these R(T,H) and M(T,H) datawe could assemble the field-temperature (H-T) phase diagram for CeBi andvisualize the three dimensional M-T-H surface.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Magnetization and magneto-transport measurements on CeBi single crystals|Brinda Kuthanazhi,Na Hyun Jo,Li Xiang,Sergey L. Bud'ko,Paul C. Canfield###
(1586649, 1586649)
 From these R(T,H) and M(T,H) datawe could assemble the field-temperature (H-T) phase diagram for CeBi andvisualize the three dimensional M-T-H surface.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Magnetization and magneto-transport measurements on CeBi single crystals|Brinda Kuthanazhi,Na Hyun Jo,Li Xiang,Sergey L. Bud'ko,Paul C. Canfield###
(1586668, 1586668)
 From these R(T,H) and M(T,H) datawe could assemble the field-temperature (H-T) phase diagram for CeBi andvisualize the three dimensional M-T-H surface.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CeBi
###Magnetization and magneto-transport measurements on CeBi single crystals|Brinda Kuthanazhi,Na Hyun Jo,Li Xiang,Sergey L. Bud'ko,Paul C. Canfield###
(1586679, 1586680)
 From these R(T,H) and M(T,H) datawe could assemble the field-temperature (H-T) phase diagram for CeBi andvisualize the three dimensional M-T-H surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Magnetization and magneto-transport measurements on CeBi single crystals|Brinda Kuthanazhi,Na Hyun Jo,Li Xiang,Sergey L. Bud'ko,Paul C. Canfield###
(1586697, 1586697)
 From these R(T,H) and M(T,H) datawe could assemble the field-temperature (H-T) phase diagram for CeBi andvisualize the three dimensional M-T-H surface.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magnetization and magneto-transport measurements on CeBi single crystals|Brinda Kuthanazhi,Na Hyun Jo,Li Xiang,Sergey L. Bud'ko,Paul C. Canfield###
(1586702, 1586702)
 In the phase diagram, weidentify regions with well defined magnetization values, and identify a newphase region.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Magnetization and magneto-transport measurements on CeBi single crystals|Brinda Kuthanazhi,Na Hyun Jo,Li Xiang,Sergey L. Bud'ko,Paul C. Canfield###
(1586805, 1586805)
 The magnetoresistance (MR) in the low temperature regime shows,above 6T<missing VAR> a power-law, non-saturated behavior with large MR (sim3times105 % at 2K and 13.95T), along with Shubnikov-de Haasoscillations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Magnetization and magneto-transport measurements on CeBi single crystals|Brinda Kuthanazhi,Na Hyun Jo,Li Xiang,Sergey L. Bud'ko,Paul C. Canfield###
(1586856, 1586856)
 With increasing temperatures, MR decreases, and then becomesnegative for T<missing VAR>gtrsim 10K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ce3
###Magnetization and magneto-transport measurements on CeBi single crystals|Brinda Kuthanazhi,Na Hyun Jo,Li Xiang,Sergey L. Bud'ko,Paul C. Canfield###
(1586934, 1586935)
 This crossover in MR seems to be unrelated to anyspecific magnetic or metamagnetic transitions, but rather is associated withchanging from a low-temperature normal metal regime with little or noscattering from the Ce3 moments and an anomalously large MR, to anincreased scattering from local Ce moments and a negative MR as temperatureincreases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ce
###Magnetization and magneto-transport measurements on CeBi single crystals|Brinda Kuthanazhi,Na Hyun Jo,Li Xiang,Sergey L. Bud'ko,Paul C. Canfield###
(1586964, 1586964)
 This crossover in MR seems to be unrelated to anyspecific magnetic or metamagnetic transitions, but rather is associated withchanging from a low-temperature normal metal regime with little or noscattering from the Ce3 moments and an anomalously large MR, to anincreased scattering from local Ce moments and a negative MR as temperatureincreases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NdFeAsO0.82F0.18
###Flux pinning mechanism in NdFeAsO0.82F0.18 superconductor: Thermally activated flux flow and charge carrier mean free path fluctuation pinning|X. L. Wang,S. R. Ghorbani,S. X. Dou,Xiao-Li Shen,Wei Yi,Zheng-Cai Li,Zhi-An Ren###
(1587001, 1587007)
Flux pinning mechanism in NdFeAsO0.82F0.18 superconductor Thermally activated flux flow and charge carrier mean free path fluctuation pinning.
Featurization terminated normally.
0,0,0,0,0,0,0,0.205,0.045,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 51, 'K', 1],[350.0, 2000, 'K', 8],[436.0, 8, 'T', 9]

NdO0.82F0.18FeAs
###Flux pinning mechanism in NdFeAsO0.82F0.18 superconductor: Thermally activated flux flow and charge carrier mean free path fluctuation pinning|X. L. Wang,S. R. Ghorbani,S. X. Dou,Xiao-Li Shen,Wei Yi,Zheng-Cai Li,Zhi-An Ren###
(1587046, 1587052)
 The flux pinning mechanism of NdO0.82F0.18FeAs superconductor made under highpressure, with a critical temperature, Tc, of 51 K, has been investigated indetail in this work.
Featurization terminated normally.
0,0,0,0,0,0,0,0.205,0.045,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 51, 'K', 0],[305.0, 2000, 'K', 7],[391.0, 8, 'T', 8]

Tc
###Flux pinning mechanism in NdFeAsO0.82F0.18 superconductor: Thermally activated flux flow and charge carrier mean free path fluctuation pinning|X. L. Wang,S. R. Ghorbani,S. X. Dou,Xiao-Li Shen,Wei Yi,Zheng-Cai Li,Zhi-An Ren###
(1587075, 1587075)
 The flux pinning mechanism of NdO0.82F0.18FeAs superconductor made under highpressure, with a critical temperature, Tc, of 51 K, has been investigated indetail in this work.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 51, 'K', 0],[282.0, 2000, 'K', 7],[368.0, 8, 'T', 8]

(B)
###Flux pinning mechanism in NdFeAsO0.82F0.18 superconductor: Thermally activated flux flow and charge carrier mean free path fluctuation pinning|X. L. Wang,S. R. Ghorbani,S. X. Dou,Xiao-Li Shen,Wei Yi,Zheng-Cai Li,Zhi-An Ren###
(1587163, 1587165)
 The field dependence of the critical current density, Jc(B), was analyzedwithin the collective pinning model.
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 51, 'K', 2],[192.0, 2000, 'K', 5],[278.0, 8, 'T', 6]

Tc
###Flux pinning mechanism in NdFeAsO0.82F0.18 superconductor: Thermally activated flux flow and charge carrier mean free path fluctuation pinning|X. L. Wang,S. R. Ghorbani,S. X. Dou,Xiao-Li Shen,Wei Yi,Zheng-Cai Li,Zhi-An Ren###
(1587341, 1587341)
 Analysis of resistive transition broadening revealed that thermallyactivated flux flow is found to be responsible for the resistivity contributionin the vicinity of Tc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[262.0, 51, 'K', 6],[16.0, 2000, 'K', 1],[102.0, 8, 'T', 2]

U0
###Flux pinning mechanism in NdFeAsO0.82F0.18 superconductor: Thermally activated flux flow and charge carrier mean free path fluctuation pinning|X. L. Wang,S. R. Ghorbani,S. X. Dou,Xiao-Li Shen,Wei Yi,Zheng-Cai Li,Zhi-An Ren###
(1587350, 1587351)
 The activation energy U0/k<missing VAR>B is 2000 K in low fields andscales as B (-1/3) over a wide field range.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[271.0, 51, 'K', 7],[6.0, 2000, 'K', 0],[92.0, 8, 'T', 1]

B
###Flux pinning mechanism in NdFeAsO0.82F0.18 superconductor: Thermally activated flux flow and charge carrier mean free path fluctuation pinning|X. L. Wang,S. R. Ghorbani,S. X. Dou,Xiao-Li Shen,Wei Yi,Zheng-Cai Li,Zhi-An Ren###
(1587354, 1587354)
 The activation energy U0/k<missing VAR>B is 2000 K in low fields andscales as B (-1/3) over a wide field range.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[275.0, 51, 'K', 7],[3.0, 2000, 'K', 0],[89.0, 8, 'T', 1]

B
###Flux pinning mechanism in NdFeAsO0.82F0.18 superconductor: Thermally activated flux flow and charge carrier mean free path fluctuation pinning|X. L. Wang,S. R. Ghorbani,S. X. Dou,Xiao-Li Shen,Wei Yi,Zheng-Cai Li,Zhi-An Ren###
(1587372, 1587372)
 The activation energy U0/k<missing VAR>B is 2000 K in low fields andscales as B (-1/3) over a wide field range.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[293.0, 51, 'K', 7],[15.0, 2000, 'K', 0],[71.0, 8, 'T', 1]

NdO0.82F0.18FeAs
###Flux pinning mechanism in NdFeAsO0.82F0.18 superconductor: Thermally activated flux flow and charge carrier mean free path fluctuation pinning|X. L. Wang,S. R. Ghorbani,S. X. Dou,Xiao-Li Shen,Wei Yi,Zheng-Cai Li,Zhi-An Ren###
(1587403, 1587409)
 Our results indicate that theNdO0.82F0.18FeAs has stronger intrinsic pinning than Bi-2212 and also strongerthan MgB2 for H > 8 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0.205,0.045,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[324.0, 51, 'K', 8],[46.0, 2000, 'K', 1],[34.0, 8, 'T', 0]

Bi
###Flux pinning mechanism in NdFeAsO0.82F0.18 superconductor: Thermally activated flux flow and charge carrier mean free path fluctuation pinning|X. L. Wang,S. R. Ghorbani,S. X. Dou,Xiao-Li Shen,Wei Yi,Zheng-Cai Li,Zhi-An Ren###
(1587421, 1587421)
 Our results indicate that theNdO0.82F0.18FeAs has stronger intrinsic pinning than Bi-2212 and also strongerthan MgB2 for H > 8 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[342.0, 51, 'K', 8],[64.0, 2000, 'K', 1],[22.0, 8, 'T', 0]

MgB2
###Flux pinning mechanism in NdFeAsO0.82F0.18 superconductor: Thermally activated flux flow and charge carrier mean free path fluctuation pinning|X. L. Wang,S. R. Ghorbani,S. X. Dou,Xiao-Li Shen,Wei Yi,Zheng-Cai Li,Zhi-An Ren###
(1587434, 1587436)
 Our results indicate that theNdO0.82F0.18FeAs has stronger intrinsic pinning than Bi-2212 and also strongerthan MgB2 for H > 8 T.
Featurization terminated normally.
0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[355.0, 51, 'K', 8],[77.0, 2000, 'K', 1],[7.0, 8, 'T', 0]

H
###Flux pinning mechanism in NdFeAsO0.82F0.18 superconductor: Thermally activated flux flow and charge carrier mean free path fluctuation pinning|X. L. Wang,S. R. Ghorbani,S. X. Dou,Xiao-Li Shen,Wei Yi,Zheng-Cai Li,Zhi-An Ren###
(1587440, 1587440)
 Our results indicate that theNdO0.82F0.18FeAs has stronger intrinsic pinning than Bi-2212 and also strongerthan MgB2 for H > 8 T.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[361.0, 51, 'K', 8],[83.0, 2000, 'K', 1],[3.0, 8, 'T', 0]

SrFe2As2
###Transport and anisotropy in single-crystalline SrFe$_2$As$_2$ and $A_{0.6}$K$_{0.4}$Fe$_2$As$_2$ ($A$ = Sr, Ba) superconductors|G. F. Chen,Z. Li,J. Dong,G. Li,W. Z. Hu,X. D. Zhang,X. H. Song,P. Zheng,N. L. Wang,J. L. Luo###
(1587466, 1587470)
Transport and anisotropy in single-crystalline SrFe2As2 and A0.6K0.4Fe2As2 (A  Sr, Ba) superconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0.4,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 130, 'is', 3],[186.0, 200, 'K', 4],[315.0, 35, 'K', 8]

K0.4Fe2As2
###Transport and anisotropy in single-crystalline SrFe$_2$As$_2$ and $A_{0.6}$K$_{0.4}$Fe$_2$As$_2$ ($A$ = Sr, Ba) superconductors|G. F. Chen,Z. Li,J. Dong,G. Li,W. Z. Hu,X. D. Zhang,X. H. Song,P. Zheng,N. L. Wang,J. L. Luo###
(1587476, 1587481)
Transport and anisotropy in single-crystalline SrFe2As2 and A0.6K0.4Fe2As2 (A  Sr, Ba) superconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.09090909090909091,0,0,0,0,0,0,0.45454545454545453,0,0,0,0,0,0,0.45454545454545453,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 130, 'is', 3],[175.0, 200, 'K', 4],[304.0, 35, 'K', 8]

Sr
###Transport and anisotropy in single-crystalline SrFe$_2$As$_2$ and $A_{0.6}$K$_{0.4}$Fe$_2$As$_2$ ($A$ = Sr, Ba) superconductors|G. F. Chen,Z. Li,J. Dong,G. Li,W. Z. Hu,X. D. Zhang,X. H. Song,P. Zheng,N. L. Wang,J. L. Luo###
(1587487, 1587487)
Transport and anisotropy in single-crystalline SrFe2As2 and A0.6K0.4Fe2As2 (A  Sr, Ba) superconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 130, 'is', 3],[169.0, 200, 'K', 4],[298.0, 35, 'K', 8]

Ba
###Transport and anisotropy in single-crystalline SrFe$_2$As$_2$ and $A_{0.6}$K$_{0.4}$Fe$_2$As$_2$ ($A$ = Sr, Ba) superconductors|G. F. Chen,Z. Li,J. Dong,G. Li,W. Z. Hu,X. D. Zhang,X. H. Song,P. Zheng,N. L. Wang,J. L. Luo###
(1587490, 1587490)
Transport and anisotropy in single-crystalline SrFe2As2 and A0.6K0.4Fe2As2 (A  Sr, Ba) superconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 130, 'is', 3],[166.0, 200, 'K', 4],[295.0, 35, 'K', 8]

SrFe2As2
###Transport and anisotropy in single-crystalline SrFe$_2$As$_2$ and $A_{0.6}$K$_{0.4}$Fe$_2$As$_2$ ($A$ = Sr, Ba) superconductors|G. F. Chen,Z. Li,J. Dong,G. Li,W. Z. Hu,X. D. Zhang,X. H. Song,P. Zheng,N. L. Wang,J. L. Luo###
(1587514, 1587518)
 We have successfully grown high quality single crystals of SrFe2As2 andA0.6K0.4Fe2As2(ASr, Ba) using flux method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0.4,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 130, 'is', 2],[138.0, 200, 'K', 3],[267.0, 35, 'K', 7]

As2
###Transport and anisotropy in single-crystalline SrFe$_2$As$_2$ and $A_{0.6}$K$_{0.4}$Fe$_2$As$_2$ ($A$ = Sr, Ba) superconductors|G. F. Chen,Z. Li,J. Dong,G. Li,W. Z. Hu,X. D. Zhang,X. H. Song,P. Zheng,N. L. Wang,J. L. Luo###
(1587529, 1587530)
 We have successfully grown high quality single crystals of SrFe2As2 andA0.6K0.4Fe2As2(ASr, Ba) using flux method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 130, 'is', 2],[126.0, 200, 'K', 3],[255.0, 35, 'K', 7]

Sr
###Transport and anisotropy in single-crystalline SrFe$_2$As$_2$ and $A_{0.6}$K$_{0.4}$Fe$_2$As$_2$ ($A$ = Sr, Ba) superconductors|G. F. Chen,Z. Li,J. Dong,G. Li,W. Z. Hu,X. D. Zhang,X. H. Song,P. Zheng,N. L. Wang,J. L. Luo###
(1587533, 1587533)
 We have successfully grown high quality single crystals of SrFe2As2 andA0.6K0.4Fe2As2(ASr, Ba) using flux method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 130, 'is', 2],[123.0, 200, 'K', 3],[252.0, 35, 'K', 7]

Ba
###Transport and anisotropy in single-crystalline SrFe$_2$As$_2$ and $A_{0.6}$K$_{0.4}$Fe$_2$As$_2$ ($A$ = Sr, Ba) superconductors|G. F. Chen,Z. Li,J. Dong,G. Li,W. Z. Hu,X. D. Zhang,X. H. Song,P. Zheng,N. L. Wang,J. L. Luo###
(1587536, 1587536)
 We have successfully grown high quality single crystals of SrFe2As2 andA0.6K0.4Fe2As2(ASr, Ba) using flux method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 130, 'is', 2],[120.0, 200, 'K', 3],[249.0, 35, 'K', 7]

SrFe2As2
###Transport and anisotropy in single-crystalline SrFe$_2$As$_2$ and $A_{0.6}$K$_{0.4}$Fe$_2$As$_2$ ($A$ = Sr, Ba) superconductors|G. F. Chen,Z. Li,J. Dong,G. Li,W. Z. Hu,X. D. Zhang,X. H. Song,P. Zheng,N. L. Wang,J. L. Luo###
(1587576, 1587580)
 For parent compoundSrFe2As2, an anisotropic resistivity with rhoc<missing VAR> / rhoab as largeas 130 is obtained at low temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0.4,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 130, 'is', 0],[76.0, 200, 'K', 1],[205.0, 35, 'K', 5]

S
###Transport and anisotropy in single-crystalline SrFe$_2$As$_2$ and $A_{0.6}$K$_{0.4}$Fe$_2$As$_2$ ($A$ = Sr, Ba) superconductors|G. F. Chen,Z. Li,J. Dong,G. Li,W. Z. Hu,X. D. Zhang,X. H. Song,P. Zheng,N. L. Wang,J. L. Luo###
(1587645, 1587645)
 A sharp drop in both in-plane andout-plane resistivity due to the SD<missing VAR>W instability is observed below 200 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 130, 'is', 1],[11.0, 200, 'K', 0],[140.0, 35, 'K', 4]

W
###Transport and anisotropy in single-crystalline SrFe$_2$As$_2$ and $A_{0.6}$K$_{0.4}$Fe$_2$As$_2$ ($A$ = Sr, Ba) superconductors|G. F. Chen,Z. Li,J. Dong,G. Li,W. Z. Hu,X. D. Zhang,X. H. Song,P. Zheng,N. L. Wang,J. L. Luo###
(1587647, 1587647)
 A sharp drop in both in-plane andout-plane resistivity due to the SD<missing VAR>W instability is observed below 200 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 130, 'is', 1],[9.0, 200, 'K', 0],[138.0, 35, 'K', 4]

S
###Transport and anisotropy in single-crystalline SrFe$_2$As$_2$ and $A_{0.6}$K$_{0.4}$Fe$_2$As$_2$ ($A$ = Sr, Ba) superconductors|G. F. Chen,Z. Li,J. Dong,G. Li,W. Z. Hu,X. D. Zhang,X. H. Song,P. Zheng,N. L. Wang,J. L. Luo###
(1587697, 1587697)
 Theangular dependence of in-plane magnetoresistance shows 2-fold symmetry withfield rotating within ab plane below SD<missing VAR>W transition temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 130, 'is', 2],[41.0, 200, 'K', 1],[88.0, 35, 'K', 3]

W
###Transport and anisotropy in single-crystalline SrFe$_2$As$_2$ and $A_{0.6}$K$_{0.4}$Fe$_2$As$_2$ ($A$ = Sr, Ba) superconductors|G. F. Chen,Z. Li,J. Dong,G. Li,W. Z. Hu,X. D. Zhang,X. H. Song,P. Zheng,N. L. Wang,J. L. Luo###
(1587699, 1587699)
 Theangular dependence of in-plane magnetoresistance shows 2-fold symmetry withfield rotating within ab plane below SD<missing VAR>W transition temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 130, 'is', 2],[43.0, 200, 'K', 1],[86.0, 35, 'K', 3]

S
###Transport and anisotropy in single-crystalline SrFe$_2$As$_2$ and $A_{0.6}$K$_{0.4}$Fe$_2$As$_2$ ($A$ = Sr, Ba) superconductors|G. F. Chen,Z. Li,J. Dong,G. Li,W. Z. Hu,X. D. Zhang,X. H. Song,P. Zheng,N. L. Wang,J. L. Luo###
(1587727, 1587727)
 This isconsistent with a stripe-type spin ordering in SD<missing VAR>W state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 130, 'is', 3],[71.0, 200, 'K', 2],[58.0, 35, 'K', 2]

W
###Transport and anisotropy in single-crystalline SrFe$_2$As$_2$ and $A_{0.6}$K$_{0.4}$Fe$_2$As$_2$ ($A$ = Sr, Ba) superconductors|G. F. Chen,Z. Li,J. Dong,G. Li,W. Z. Hu,X. D. Zhang,X. H. Song,P. Zheng,N. L. Wang,J. L. Luo###
(1587729, 1587729)
 This isconsistent with a stripe-type spin ordering in SD<missing VAR>W state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 130, 'is', 3],[73.0, 200, 'K', 2],[56.0, 35, 'K', 2]

In
###Transport and anisotropy in single-crystalline SrFe$_2$As$_2$ and $A_{0.6}$K$_{0.4}$Fe$_2$As$_2$ ($A$ = Sr, Ba) superconductors|G. F. Chen,Z. Li,J. Dong,G. Li,W. Z. Hu,X. D. Zhang,X. H. Song,P. Zheng,N. L. Wang,J. L. Luo###
(1587734, 1587734)
 In K dopedA0.6K0.4Fe2As2(ASr.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 130, 'is', 4],[78.0, 200, 'K', 3],[51.0, 35, 'K', 1]

K
###Transport and anisotropy in single-crystalline SrFe$_2$As$_2$ and $A_{0.6}$K$_{0.4}$Fe$_2$As$_2$ ($A$ = Sr, Ba) superconductors|G. F. Chen,Z. Li,J. Dong,G. Li,W. Z. Hu,X. D. Zhang,X. H. Song,P. Zheng,N. L. Wang,J. L. Luo###
(1587736, 1587736)
 In K dopedA0.6K0.4Fe2As2(ASr.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 130, 'is', 4],[80.0, 200, 'K', 3],[49.0, 35, 'K', 1]

As2
###Transport and anisotropy in single-crystalline SrFe$_2$As$_2$ and $A_{0.6}$K$_{0.4}$Fe$_2$As$_2$ ($A$ = Sr, Ba) superconductors|G. F. Chen,Z. Li,J. Dong,G. Li,W. Z. Hu,X. D. Zhang,X. H. Song,P. Zheng,N. L. Wang,J. L. Luo###
(1587747, 1587748)
 In K dopedA0.6K0.4Fe2As2(ASr.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 130, 'is', 4],[91.0, 200, 'K', 3],[37.0, 35, 'K', 1]

Sr
###Transport and anisotropy in single-crystalline SrFe$_2$As$_2$ and $A_{0.6}$K$_{0.4}$Fe$_2$As$_2$ ($A$ = Sr, Ba) superconductors|G. F. Chen,Z. Li,J. Dong,G. Li,W. Z. Hu,X. D. Zhang,X. H. Song,P. Zheng,N. L. Wang,J. L. Luo###
(1587751, 1587751)
 In K dopedA0.6K0.4Fe2As2(ASr.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 130, 'is', 4],[95.0, 200, 'K', 3],[34.0, 35, 'K', 1]

Ba
###Transport and anisotropy in single-crystalline SrFe$_2$As$_2$ and $A_{0.6}$K$_{0.4}$Fe$_2$As$_2$ ($A$ = Sr, Ba) superconductors|G. F. Chen,Z. Li,J. Dong,G. Li,W. Z. Hu,X. D. Zhang,X. H. Song,P. Zheng,N. L. Wang,J. L. Luo###
(1587754, 1587754)
 Ba), the SD<missing VAR>W instability is suppressed andthe superconductivity appears with Tc above 35 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 130, 'is', 5],[98.0, 200, 'K', 4],[31.0, 35, 'K', 0]

S
###Transport and anisotropy in single-crystalline SrFe$_2$As$_2$ and $A_{0.6}$K$_{0.4}$Fe$_2$As$_2$ ($A$ = Sr, Ba) superconductors|G. F. Chen,Z. Li,J. Dong,G. Li,W. Z. Hu,X. D. Zhang,X. H. Song,P. Zheng,N. L. Wang,J. L. Luo###
(1587760, 1587760)
 Ba), the SD<missing VAR>W instability is suppressed andthe superconductivity appears with Tc above 35 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 130, 'is', 5],[104.0, 200, 'K', 4],[25.0, 35, 'K', 0]

W
###Transport and anisotropy in single-crystalline SrFe$_2$As$_2$ and $A_{0.6}$K$_{0.4}$Fe$_2$As$_2$ ($A$ = Sr, Ba) superconductors|G. F. Chen,Z. Li,J. Dong,G. Li,W. Z. Hu,X. D. Zhang,X. H. Song,P. Zheng,N. L. Wang,J. L. Luo###
(1587762, 1587762)
 Ba), the SD<missing VAR>W instability is suppressed andthe superconductivity appears with Tc above 35 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 130, 'is', 5],[106.0, 200, 'K', 4],[23.0, 35, 'K', 0]

H
###Transport and anisotropy in single-crystalline SrFe$_2$As$_2$ and $A_{0.6}$K$_{0.4}$Fe$_2$As$_2$ ($A$ = Sr, Ba) superconductors|G. F. Chen,Z. Li,J. Dong,G. Li,W. Z. Hu,X. D. Zhang,X. H. Song,P. Zheng,N. L. Wang,J. L. Luo###
(1587807, 1587807)
 The rather low anisotropyin upper critical field between Hparallelab and Hparallelc<missing VAR> indicatesinter-plane coupling play an important role in hole doped Fe-basedsuperconductors.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[202.0, 130, 'is', 6],[151.0, 200, 'K', 5],[22.0, 35, 'K', 1]

H
###Transport and anisotropy in single-crystalline SrFe$_2$As$_2$ and $A_{0.6}$K$_{0.4}$Fe$_2$As$_2$ ($A$ = Sr, Ba) superconductors|G. F. Chen,Z. Li,J. Dong,G. Li,W. Z. Hu,X. D. Zhang,X. H. Song,P. Zheng,N. L. Wang,J. L. Luo###
(1587813, 1587813)
 The rather low anisotropyin upper critical field between Hparallelab and Hparallelc<missing VAR> indicatesinter-plane coupling play an important role in hole doped Fe-basedsuperconductors.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[208.0, 130, 'is', 6],[157.0, 200, 'K', 5],[28.0, 35, 'K', 1]

Fe
###Transport and anisotropy in single-crystalline SrFe$_2$As$_2$ and $A_{0.6}$K$_{0.4}$Fe$_2$As$_2$ ($A$ = Sr, Ba) superconductors|G. F. Chen,Z. Li,J. Dong,G. Li,W. Z. Hu,X. D. Zhang,X. H. Song,P. Zheng,N. L. Wang,J. L. Luo###
(1587840, 1587840)
 The rather low anisotropyin upper critical field between Hparallelab and Hparallelc<missing VAR> indicatesinter-plane coupling play an important role in hole doped Fe-basedsuperconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[235.0, 130, 'is', 6],[184.0, 200, 'K', 5],[55.0, 35, 'K', 1]

In
###Spin-flip scattering in time-dependent transport through a quantum dot: Enhanced spin-current and inverse tunneling magnetoresistance|Enrico Perfetto,Gianluca Stefanucci,Michele Cini###
(1588074, 1588074)
 In the latter case we derive a transparent analytic formula forthe spin-resolved current, and transient oscillations damped over differenttime-scales are identified.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ds
###Effects of different geometries on the conductance, shot noise and tunnel magnetoresistance of double quantum dots|I. Weymann###
(1588456, 1588456)
 For DQDscoupled in series, we find a strong dependence of the TMR on the number ofelectrons occupying the double dot, and super-Poissonian shot noise in theCoulomb blockade regime.
EXCEPTION 3: IndexError for Ds
In
Abstract does not contain any numbers.

BiFeO3
###Electric-field control of magnetic ordering in the tetragonal BiFeO3|Hang-Chen Ding,Chun-Gang Duan###
(1588840, 1588843)
Electric-field control of magnetic ordering in the tetragonal BiFeO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[393.0, 2, 'MV', 6]

BiFeO3
###Electric-field control of magnetic ordering in the tetragonal BiFeO3|Hang-Chen Ding,Chun-Gang Duan###
(1588879, 1588882)
 We propose a way to use electric-field to control the magnetic ordering ofthe tetragonal BiFeO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[354.0, 2, 'MV', 5]

BiFeO3
###Electric-field control of magnetic ordering in the tetragonal BiFeO3|Hang-Chen Ding,Chun-Gang Duan###
(1588927, 1588930)
 Based on systematic first-principles studies of theepitaxial strain effect on the ferroelectric and magnetic properties of thetetragonal BiFeO3, we find that there exists a transition from C-type to G<missing VAR>-typeantiferromagnetic (AFM) phase at in-plane constant a  3.905 AA when theferroelectric polarization is along [001] direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[306.0, 2, 'MV', 4]

C
###Electric-field control of magnetic ordering in the tetragonal BiFeO3|Hang-Chen Ding,Chun-Gang Duan###
(1588949, 1588949)
 Based on systematic first-principles studies of theepitaxial strain effect on the ferroelectric and magnetic properties of thetetragonal BiFeO3, we find that there exists a transition from C-type to G<missing VAR>-typeantiferromagnetic (AFM) phase at in-plane constant a  3.905 AA when theferroelectric polarization is along [001] direction.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[287.0, 2, 'MV', 4]

F
###Electric-field control of magnetic ordering in the tetragonal BiFeO3|Hang-Chen Ding,Chun-Gang Duan###
(1588964, 1588964)
 Based on systematic first-principles studies of theepitaxial strain effect on the ferroelectric and magnetic properties of thetetragonal BiFeO3, we find that there exists a transition from C-type to G<missing VAR>-typeantiferromagnetic (AFM) phase at in-plane constant a  3.905 AA when theferroelectric polarization is along [001] direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[272.0, 2, 'MV', 4]

BiFeO3
###Electric-field control of magnetic ordering in the tetragonal BiFeO3|Hang-Chen Ding,Chun-Gang Duan###
(1589194, 1589197)
 It is found that the orientation change of ferroelectricpolarization, which can be realized by applying external electric-field, hassignificant impact on the Heisenberg exchange parameters and therefore themagnetic orderings of tetragonal BiFeO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 2, 'MV', 1]

C
###Electric-field control of magnetic ordering in the tetragonal BiFeO3|Hang-Chen Ding,Chun-Gang Duan###
(1589253, 1589253)
 For example, at a  3.79 AA, anelectric field along [111] direction with magnitude of 2 MV/cm could change themagnetic ordering from C-AFM<missing VAR> to G<missing VAR>-AFM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 2, 'MV', 0]

F
###Electric-field control of magnetic ordering in the tetragonal BiFeO3|Hang-Chen Ding,Chun-Gang Duan###
(1589256, 1589256)
 For example, at a  3.79 AA, anelectric field along [111] direction with magnitude of 2 MV/cm could change themagnetic ordering from C-AFM<missing VAR> to G<missing VAR>-AFM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 2, 'MV', 0]

F
###Electric-field control of magnetic ordering in the tetragonal BiFeO3|Hang-Chen Ding,Chun-Gang Duan###
(1589264, 1589264)
 For example, at a  3.79 AA, anelectric field along [111] direction with magnitude of 2 MV/cm could change themagnetic ordering from C-AFM<missing VAR> to G<missing VAR>-AFM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 2, 'MV', 0]

As
###Electric-field control of magnetic ordering in the tetragonal BiFeO3|Hang-Chen Ding,Chun-Gang Duan###
(1589268, 1589268)
 As the magnetic ordering affects manyphysical properties of the magnetic material, e.g.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 2, 'MV', 1]

(MgB2)
###Double-percolation and magnetoresistance effects in ferromagnet-superconductor nanoparticle composites|Xiangdong Liu,Raghava P. Panguluri,Daniel P. Shoemaker,Zhi-Feng Huang,Boris Nadgorny###
(1589389, 1589393)
 We investigate transport and magnetotransport properties of binary networkscomposed of superconducting (MgB2) and ferromagnetic (CrO2 or LSMO)nanoparticles.
Featurization successful!
0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[177.0, 1, 'is', 2],[300.0, 0.15, 'for', 4],[328.0, 0.05, 'for', 4],[394.0, 45, '%', 5]

CrO2
###Double-percolation and magnetoresistance effects in ferromagnet-superconductor nanoparticle composites|Xiangdong Liu,Raghava P. Panguluri,Daniel P. Shoemaker,Zhi-Feng Huang,Boris Nadgorny###
(1589400, 1589402)
 We investigate transport and magnetotransport properties of binary networkscomposed of superconducting (MgB2) and ferromagnetic (CrO2 or LSMO)nanoparticles.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[168.0, 1, 'is', 2],[291.0, 0.15, 'for', 4],[319.0, 0.05, 'for', 4],[385.0, 45, '%', 5]

O
###Double-percolation and magnetoresistance effects in ferromagnet-superconductor nanoparticle composites|Xiangdong Liu,Raghava P. Panguluri,Daniel P. Shoemaker,Zhi-Feng Huang,Boris Nadgorny###
(1589409, 1589409)
 We investigate transport and magnetotransport properties of binary networkscomposed of superconducting (MgB2) and ferromagnetic (CrO2 or LSMO)nanoparticles.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 1, 'is', 2],[284.0, 0.15, 'for', 4],[312.0, 0.05, 'for', 4],[378.0, 45, '%', 5]

O/MgB2
###Double-percolation and magnetoresistance effects in ferromagnet-superconductor nanoparticle composites|Xiangdong Liu,Raghava P. Panguluri,Daniel P. Shoemaker,Zhi-Feng Huang,Boris Nadgorny###
(1589425, 1589429)
 While for the LSMO/MgB2 system a single percolation threshold isobserved, for CrO2/MgB2 binary composites an anomalously high resistance statewith two distinct percolation thresholds corresponding to conductor-insulatorand superconductor-insulator transitions is found.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[141.0, 1, 'is', 1],[264.0, 0.15, 'for', 3],[292.0, 0.05, 'for', 3],[358.0, 45, '%', 4]

CrO2/MgB2
###Double-percolation and magnetoresistance effects in ferromagnet-superconductor nanoparticle composites|Xiangdong Liu,Raghava P. Panguluri,Daniel P. Shoemaker,Zhi-Feng Huang,Boris Nadgorny###
(1589449, 1589455)
 While for the LSMO/MgB2 system a single percolation threshold isobserved, for CrO2/MgB2 binary composites an anomalously high resistance statewith two distinct percolation thresholds corresponding to conductor-insulatorand superconductor-insulator transitions is found.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[115.0, 1, 'is', 1],[238.0, 0.15, 'for', 3],[266.0, 0.05, 'for', 3],[332.0, 45, '%', 4]

PI
###Double-percolation and magnetoresistance effects in ferromagnet-superconductor nanoparticle composites|Xiangdong Liu,Raghava P. Panguluri,Daniel P. Shoemaker,Zhi-Feng Huang,Boris Nadgorny###
(1589561, 1589562)
 The existence of this doublepercolation effect becomes possible when the interface conductance between thetwo different constituents is suppressed and the condition for the twothresholds PI  PII > 1 is satisfied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 1, 'is', 0],[131.0, 0.15, 'for', 2],[159.0, 0.05, 'for', 2],[225.0, 45, '%', 3]

PII
###Double-percolation and magnetoresistance effects in ferromagnet-superconductor nanoparticle composites|Xiangdong Liu,Raghava P. Panguluri,Daniel P. Shoemaker,Zhi-Feng Huang,Boris Nadgorny###
(1589565, 1589567)
 The existence of this doublepercolation effect becomes possible when the interface conductance between thetwo different constituents is suppressed and the condition for the twothresholds PI  PII > 1 is satisfied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 1, 'is', 0],[126.0, 0.15, 'for', 2],[154.0, 0.05, 'for', 2],[220.0, 45, '%', 3]

MgB2
###Double-percolation and magnetoresistance effects in ferromagnet-superconductor nanoparticle composites|Xiangdong Liu,Raghava P. Panguluri,Daniel P. Shoemaker,Zhi-Feng Huang,Boris Nadgorny###
(1589577, 1589579)
 For MgB2 an unusually large value of thethreshold is observed, which can be explained by the significant geometricdisparity between nanoparticles of the two constituents, resulting in a largeexcluded volume for MgB2 nanoparticles.
Featurization terminated normally.
0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 1, 'is', 1],[114.0, 0.15, 'for', 1],[142.0, 0.05, 'for', 1],[208.0, 45, '%', 2]

MgB2
###Double-percolation and magnetoresistance effects in ferromagnet-superconductor nanoparticle composites|Xiangdong Liu,Raghava P. Panguluri,Daniel P. Shoemaker,Zhi-Feng Huang,Boris Nadgorny###
(1589648, 1589650)
 For MgB2 an unusually large value of thethreshold is observed, which can be explained by the significant geometricdisparity between nanoparticles of the two constituents, resulting in a largeexcluded volume for MgB2 nanoparticles.
Featurization terminated normally.
0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 1, 'is', 1],[43.0, 0.15, 'for', 1],[71.0, 0.05, 'for', 1],[137.0, 45, '%', 2]

CrO2
###Double-percolation and magnetoresistance effects in ferromagnet-superconductor nanoparticle composites|Xiangdong Liu,Raghava P. Panguluri,Daniel P. Shoemaker,Zhi-Feng Huang,Boris Nadgorny###
(1589707, 1589709)
 The scaling behavior near boththresholds is determined, with the two critical exponents identified muapprox 2.16 pm 0.15 for the insulating-conducting transition on the CrO2 sideand s<missing VAR>  1.37pm 0.05 for the insulating - superconducting transition on theMgB2 side.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 1, 'is', 2],[14.0, 0.15, 'for', 0],[12.0, 0.05, 'for', 0],[78.0, 45, '%', 1]

MgB2
###Double-percolation and magnetoresistance effects in ferromagnet-superconductor nanoparticle composites|Xiangdong Liu,Raghava P. Panguluri,Daniel P. Shoemaker,Zhi-Feng Huang,Boris Nadgorny###
(1589738, 1589740)
 The scaling behavior near boththresholds is determined, with the two critical exponents identified muapprox 2.16 pm 0.15 for the insulating-conducting transition on the CrO2 sideand s<missing VAR>  1.37pm 0.05 for the insulating - superconducting transition on theMgB2 side.
Featurization terminated normally.
0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[168.0, 1, 'is', 2],[45.0, 0.15, 'for', 0],[17.0, 0.05, 'for', 0],[47.0, 45, '%', 1]

CrO2/MgB2
###Double-percolation and magnetoresistance effects in ferromagnet-superconductor nanoparticle composites|Xiangdong Liu,Raghava P. Panguluri,Daniel P. Shoemaker,Zhi-Feng Huang,Boris Nadgorny###
(1589766, 1589772)
 We also measure the magnetoresistance for the entire series ofCrO2/MgB2 samples, with a maximum of approximately 45% observed near thepercolation threshold at liquid He temperatures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[196.0, 1, 'is', 3],[73.0, 0.15, 'for', 1],[45.0, 0.05, 'for', 1],[15.0, 45, '%', 0]

He
###Double-percolation and magnetoresistance effects in ferromagnet-superconductor nanoparticle composites|Xiangdong Liu,Raghava P. Panguluri,Daniel P. Shoemaker,Zhi-Feng Huang,Boris Nadgorny###
(1589805, 1589805)
 We also measure the magnetoresistance for the entire series ofCrO2/MgB2 samples, with a maximum of approximately 45% observed near thepercolation threshold at liquid He temperatures.
Featurization terminated normally.
0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[235.0, 1, 'is', 3],[112.0, 0.15, 'for', 1],[84.0, 0.05, 'for', 1],[18.0, 45, '%', 0]

F
###Spin-dependent transport for armchair-edge graphene nanoribbons between ferromagnetic leads|Benhu Zhou,Xiongwen Chen,Benliang Zhou,Kai-He Ding,Guanghui Zhou###
(1589888, 1589888)
 We theoretically investigate the spin-dependent transport for the system ofan armchair-edge graphene nanoribbon (AGNR) between two ferromagnetic (FM)leads with arbitrary polarization directions at low temperatures, where amagnetic insulator is deposited on the AGNR to induce an exchange splittingbetween spin-up and -down carriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Spin-dependent transport for armchair-edge graphene nanoribbons between ferromagnetic leads|Benhu Zhou,Xiongwen Chen,Benliang Zhou,Kai-He Ding,Guanghui Zhou###
(1589974, 1589974)
 By using the standard nonequilibriumGreens<missing VAR> function (NG<missing VAR>F) technique, it is demonstrated that, the spin-resolvedtransport property for the system depends sensitively on both the width of AGNRand the polarization strength of FM<missing VAR> leads.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Spin-dependent transport for armchair-edge graphene nanoribbons between ferromagnetic leads|Benhu Zhou,Xiongwen Chen,Benliang Zhou,Kai-He Ding,Guanghui Zhou###
(1589976, 1589976)
 By using the standard nonequilibriumGreens<missing VAR> function (NG<missing VAR>F) technique, it is demonstrated that, the spin-resolvedtransport property for the system depends sensitively on both the width of AGNRand the polarization strength of FM<missing VAR> leads.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Spin-dependent transport for armchair-edge graphene nanoribbons between ferromagnetic leads|Benhu Zhou,Xiongwen Chen,Benliang Zhou,Kai-He Ding,Guanghui Zhou###
(1590038, 1590038)
 By using the standard nonequilibriumGreens<missing VAR> function (NG<missing VAR>F) technique, it is demonstrated that, the spin-resolvedtransport property for the system depends sensitively on both the width of AGNRand the polarization strength of FM<missing VAR> leads.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin-dependent transport for armchair-edge graphene nanoribbons between ferromagnetic leads|Benhu Zhou,Xiongwen Chen,Benliang Zhou,Kai-He Ding,Guanghui Zhou###
(1590259, 1590259)
 Further, the current-induced spin transfer torque (STT)for 7-AGNR system is systematically larger than that for 8-AGNR one.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SmMnAsO1-x
###Mott-insulator to metal transition in filling-controlled SmMnAsO_{1-x}|Y. Shiomi,S. Ishiwata,Y. Taguchi,Y. Tokura###
(1590403, 1590409)
Mott-insulator to metal transition in filling-controlled SmMnAsO1-x.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[203.0, 0.3, ',', 4],[313.0, 2, 'K', 5]

SmMnAsO1-x
###Mott-insulator to metal transition in filling-controlled SmMnAsO_{1-x}|Y. Shiomi,S. Ishiwata,Y. Taguchi,Y. Tokura###
(1590431, 1590437)
 Transport and magnetic properties have been systematically investigated forSmMnAsO1-x with controlled electron-doping.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[175.0, 0.3, ',', 3],[285.0, 2, 'K', 4]

As
###Mott-insulator to metal transition in filling-controlled SmMnAsO_{1-x}|Y. Shiomi,S. Ishiwata,Y. Taguchi,Y. Tokura###
(1590448, 1590448)
 As the electron band-filling isincreased with the increase of oxygen deficiency (x), the resistivitymonotonically decreases and the transition from Mott-insulator to metal occursbetween x<missing VAR>0.17 and 0.2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 0.3, ',', 2],[274.0, 2, 'K', 3]

K
###Mott-insulator to metal transition in filling-controlled SmMnAsO_{1-x}|Y. Shiomi,S. Ishiwata,Y. Taguchi,Y. Tokura###
(1590561, 1590561)
 Seebeck coefficient at room temperature abruptlychanges around the critical doping level from a large value (sim -300 mu V/K)to a small one (sim -50 mu V/K) both with negative sign.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 0.3, ',', 1],[161.0, 2, 'K', 2]

K
###Mott-insulator to metal transition in filling-controlled SmMnAsO_{1-x}|Y. Shiomi,S. Ishiwata,Y. Taguchi,Y. Tokura###
(1590583, 1590583)
 Seebeck coefficient at room temperature abruptlychanges around the critical doping level from a large value (sim -300 mu V/K)to a small one (sim -50 mu V/K) both with negative sign.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 0.3, ',', 1],[139.0, 2, 'K', 2]

In
###Mott-insulator to metal transition in filling-controlled SmMnAsO_{1-x}|Y. Shiomi,S. Ishiwata,Y. Taguchi,Y. Tokura###
(1590595, 1590595)
 In the metalliccompounds with x<missing VAR>0.2 and x<missing VAR>0.3, Mn spins order antiferromagnetically around 30K, and the Hall coefficient with the negative sign shows a reduction inmagnitude upon the magnetic transition, indicating the change in the multipleFermi surfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 0.3, ',', 0],[127.0, 2, 'K', 1]

Mn
###Mott-insulator to metal transition in filling-controlled SmMnAsO_{1-x}|Y. Shiomi,S. Ishiwata,Y. Taguchi,Y. Tokura###
(1590615, 1590615)
 In the metalliccompounds with x<missing VAR>0.2 and x<missing VAR>0.3, Mn spins order antiferromagnetically around 30K, and the Hall coefficient with the negative sign shows a reduction inmagnitude upon the magnetic transition, indicating the change in the multipleFermi surfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 0.3, ',', 0],[107.0, 2, 'K', 1]

K
###Mott-insulator to metal transition in filling-controlled SmMnAsO_{1-x}|Y. Shiomi,S. Ishiwata,Y. Taguchi,Y. Tokura###
(1590628, 1590628)
 In the metalliccompounds with x<missing VAR>0.2 and x<missing VAR>0.3, Mn spins order antiferromagnetically around 30K, and the Hall coefficient with the negative sign shows a reduction inmagnitude upon the magnetic transition, indicating the change in the multipleFermi surfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 0.3, ',', 0],[94.0, 2, 'K', 1]

S
###Hysteretic magnetoresistance and thermal bistability in a magnetic two-dimensional hole system|Ursula Wurstbauer,Cezary Śliwa,Dieter Weiss,Tomasz Dietl,Werner Wegscheider###
(1590902, 1590902)
 Colossal negative magnetoresistance and the associated field-inducedinsulator-to-metal transition, the most characteristic features of magneticsemiconductors, are observed in n<missing VAR>-type rare earth oxides and chalcogenides,p<missing VAR>-type manganites, n<missing VAR>-type and p<missing VAR>-type diluted magnetic semiconductors (DMS) aswell as in quantum wells of n<missing VAR>-type DMS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[202.0, 100, 's', 3],[283.0, 10, ',', 5]

S
###Hysteretic magnetoresistance and thermal bistability in a magnetic two-dimensional hole system|Ursula Wurstbauer,Cezary Śliwa,Dieter Weiss,Tomasz Dietl,Werner Wegscheider###
(1590926, 1590926)
 Colossal negative magnetoresistance and the associated field-inducedinsulator-to-metal transition, the most characteristic features of magneticsemiconductors, are observed in n<missing VAR>-type rare earth oxides and chalcogenides,p<missing VAR>-type manganites, n<missing VAR>-type and p<missing VAR>-type diluted magnetic semiconductors (DMS) aswell as in quantum wells of n<missing VAR>-type DMS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 100, 's', 3],[259.0, 10, ',', 5]

Mn
###Hysteretic magnetoresistance and thermal bistability in a magnetic two-dimensional hole system|Ursula Wurstbauer,Cezary Śliwa,Dieter Weiss,Tomasz Dietl,Werner Wegscheider###
(1590945, 1590945)
 Here, we report on magnetostransportstudies of Mn modulation-doped InAs quantum wells, which reveal a magneticfield driven and bias voltage dependent insulator-to-metal transition withabrupt and hysteretic changes of resistance over several orders of magnitude.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[159.0, 100, 's', 2],[240.0, 10, ',', 4]

InAs
###Hysteretic magnetoresistance and thermal bistability in a magnetic two-dimensional hole system|Ursula Wurstbauer,Cezary Śliwa,Dieter Weiss,Tomasz Dietl,Werner Wegscheider###
(1590951, 1590952)
 Here, we report on magnetostransportstudies of Mn modulation-doped InAs quantum wells, which reveal a magneticfield driven and bias voltage dependent insulator-to-metal transition withabrupt and hysteretic changes of resistance over several orders of magnitude.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 100, 's', 2],[233.0, 10, ',', 4]

Mn
###Hysteretic magnetoresistance and thermal bistability in a magnetic two-dimensional hole system|Ursula Wurstbauer,Cezary Śliwa,Dieter Weiss,Tomasz Dietl,Werner Wegscheider###
(1591065, 1591065)
We show that the exchange coupling between a hole and the parent Mn acceptorproduces a magnetic anisotropy barrier that shifts the spin relaxation time ofthe bound hole to a 100 s range in compressively strained quantum wells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 100, 's', 0],[120.0, 10, ',', 2]

Mn
###Hysteretic magnetoresistance and thermal bistability in a magnetic two-dimensional hole system|Ursula Wurstbauer,Cezary Śliwa,Dieter Weiss,Tomasz Dietl,Werner Wegscheider###
(1591130, 1591130)
 Thisbistability of the individual Mn acceptors explains the hysteretic behaviourwhile opening prospects for information storing and processing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 100, 's', 1],[55.0, 10, ',', 1]

At
###Hysteretic magnetoresistance and thermal bistability in a magnetic two-dimensional hole system|Ursula Wurstbauer,Cezary Śliwa,Dieter Weiss,Tomasz Dietl,Werner Wegscheider###
(1591160, 1591160)
 At high biasvoltage another bistability, caused by the overheating of electrons10, givesrise to abrupt resistance jumps.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 100, 's', 2],[25.0, 10, ',', 0]

BaFe2As2
###Manifestations of multiple-carrier charge transport in the magnetostructurally ordered phase of undoped BaFe$_2$As$_2$|S. Ishida,T. Liang,M. Nakajima,K. Kihou,C. H. Lee,A. Iyo,H. Eisaki,T. Kakeshita,T. Kida,M. Hagiwara,Y. Tomioka,T. Ito,S. Uchida###
(1591236, 1591240)
Manifestations of multiple-carrier charge transport in the magnetostructurally ordered phase of undoped BaFe2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 10.0, 'From', 2]

BaFe2As2
###Manifestations of multiple-carrier charge transport in the magnetostructurally ordered phase of undoped BaFe$_2$As$_2$|S. Ishida,T. Liang,M. Nakajima,K. Kihou,C. H. Lee,A. Iyo,H. Eisaki,T. Kakeshita,T. Kida,M. Hagiwara,Y. Tomioka,T. Ito,S. Uchida###
(1591255, 1591259)
 We investigated the transport properties of BaFe2As2 single crystalsbefore and after annealing with BaAs powder.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 10.0, 'From', 1]

BaAs
###Manifestations of multiple-carrier charge transport in the magnetostructurally ordered phase of undoped BaFe$_2$As$_2$|S. Ishida,T. Liang,M. Nakajima,K. Kihou,C. H. Lee,A. Iyo,H. Eisaki,T. Kakeshita,T. Kida,M. Hagiwara,Y. Tomioka,T. Ito,S. Uchida###
(1591276, 1591277)
 We investigated the transport properties of BaFe2As2 single crystalsbefore and after annealing with BaAs powder.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 10.0, 'From', 1]

LaAlO3/SrTiO3
###Magnetoresistance of 2D and 3D Electron Gas in LaAlO3/SrTiO3 Heterostructures: Influence of Magnetic Ordering, Interface Scattering and Dimensionality|X. Wang,W. M Lü,A. Annadi,Z. Q. Liu,S. Dhar,T. Venkatesan,Ariando###
(1591632, 1591640)
Magnetoresistance of 2D and 3D Electron Gas in LaAlO3/SrTiO3 Heterostructures Influence of Magnetic Ordering, Interface Scattering and Dimensionality.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[11.0, 2, 'D', 0],[8.0, 3, 'D', 0],[128.0, 3, 'D', 1],[292.0, 3, 'D', 4]

LaAlO3/SrTiO3
###Magnetoresistance of 2D and 3D Electron Gas in LaAlO3/SrTiO3 Heterostructures: Influence of Magnetic Ordering, Interface Scattering and Dimensionality|X. Wang,W. M Lü,A. Annadi,Z. Q. Liu,S. Dhar,T. Venkatesan,Ariando###
(1591673, 1591681)
 Magnetoresistance (MR) anisotropy in LaAlO3/SrTiO3 (L<missing VAR>AO/ST<missing VAR>O) interfaces iscompared between samples prepared in high oxygen partial pressure (PO2) of 10-4mbar exhibiting quasi-two-dimensional (quasi-2D) electron gas and low PO2 of10-6 mbar exhibiting 3D conductivity.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[52.0, 2, 'D', 1],[49.0, 3, 'D', 1],[87.0, 3, 'D', 0],[251.0, 3, 'D', 3]

O/S
###Magnetoresistance of 2D and 3D Electron Gas in LaAlO3/SrTiO3 Heterostructures: Influence of Magnetic Ordering, Interface Scattering and Dimensionality|X. Wang,W. M Lü,A. Annadi,Z. Q. Liu,S. Dhar,T. Venkatesan,Ariando###
(1591686, 1591688)
 Magnetoresistance (MR) anisotropy in LaAlO3/SrTiO3 (L<missing VAR>AO/ST<missing VAR>O) interfaces iscompared between samples prepared in high oxygen partial pressure (PO2) of 10-4mbar exhibiting quasi-two-dimensional (quasi-2D) electron gas and low PO2 of10-6 mbar exhibiting 3D conductivity.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[65.0, 2, 'D', 1],[62.0, 3, 'D', 1],[80.0, 3, 'D', 0],[244.0, 3, 'D', 3]

O
###Magnetoresistance of 2D and 3D Electron Gas in LaAlO3/SrTiO3 Heterostructures: Influence of Magnetic Ordering, Interface Scattering and Dimensionality|X. Wang,W. M Lü,A. Annadi,Z. Q. Liu,S. Dhar,T. Venkatesan,Ariando###
(1591690, 1591690)
 Magnetoresistance (MR) anisotropy in LaAlO3/SrTiO3 (L<missing VAR>AO/ST<missing VAR>O) interfaces iscompared between samples prepared in high oxygen partial pressure (PO2) of 10-4mbar exhibiting quasi-two-dimensional (quasi-2D) electron gas and low PO2 of10-6 mbar exhibiting 3D conductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 2, 'D', 1],[66.0, 3, 'D', 1],[78.0, 3, 'D', 0],[242.0, 3, 'D', 3]

(PO2)
###Magnetoresistance of 2D and 3D Electron Gas in LaAlO3/SrTiO3 Heterostructures: Influence of Magnetic Ordering, Interface Scattering and Dimensionality|X. Wang,W. M Lü,A. Annadi,Z. Q. Liu,S. Dhar,T. Venkatesan,Ariando###
(1591716, 1591720)
 Magnetoresistance (MR) anisotropy in LaAlO3/SrTiO3 (L<missing VAR>AO/ST<missing VAR>O) interfaces iscompared between samples prepared in high oxygen partial pressure (PO2) of 10-4mbar exhibiting quasi-two-dimensional (quasi-2D) electron gas and low PO2 of10-6 mbar exhibiting 3D conductivity.
Featurization successful!
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 2, 'D', 1],[92.0, 3, 'D', 1],[48.0, 3, 'D', 0],[212.0, 3, 'D', 3]

PO2
###Magnetoresistance of 2D and 3D Electron Gas in LaAlO3/SrTiO3 Heterostructures: Influence of Magnetic Ordering, Interface Scattering and Dimensionality|X. Wang,W. M Lü,A. Annadi,Z. Q. Liu,S. Dhar,T. Venkatesan,Ariando###
(1591754, 1591756)
 Magnetoresistance (MR) anisotropy in LaAlO3/SrTiO3 (L<missing VAR>AO/ST<missing VAR>O) interfaces iscompared between samples prepared in high oxygen partial pressure (PO2) of 10-4mbar exhibiting quasi-two-dimensional (quasi-2D) electron gas and low PO2 of10-6 mbar exhibiting 3D conductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 2, 'D', 1],[130.0, 3, 'D', 1],[12.0, 3, 'D', 0],[176.0, 3, 'D', 3]

PO2
###Magnetoresistance of 2D and 3D Electron Gas in LaAlO3/SrTiO3 Heterostructures: Influence of Magnetic Ordering, Interface Scattering and Dimensionality|X. Wang,W. M Lü,A. Annadi,Z. Q. Liu,S. Dhar,T. Venkatesan,Ariando###
(1591799, 1591801)
 While MR of an order of magnitude largerwas observed in low PO2 samples compared to those of high PO2 samples, large MRanisotropies were observed in both cases.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 2, 'D', 2],[175.0, 3, 'D', 2],[31.0, 3, 'D', 1],[131.0, 3, 'D', 2]

PO2
###Magnetoresistance of 2D and 3D Electron Gas in LaAlO3/SrTiO3 Heterostructures: Influence of Magnetic Ordering, Interface Scattering and Dimensionality|X. Wang,W. M Lü,A. Annadi,Z. Q. Liu,S. Dhar,T. Venkatesan,Ariando###
(1591815, 1591817)
 While MR of an order of magnitude largerwas observed in low PO2 samples compared to those of high PO2 samples, large MRanisotropies were observed in both cases.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[194.0, 2, 'D', 2],[191.0, 3, 'D', 2],[47.0, 3, 'D', 1],[115.0, 3, 'D', 2]

Fe/MgO/Fe
###Strength of the symmetry spin filtering effect in magnetic tunnel junctions|Sergey V. Faleev,Stuart S. P. Parkin,Oleg N. Mryasov###
(1592168, 1592173)
 Strength of the the symmetry spin filtering effect (as defined by theasymptotic behavior of the tunneling magnetoresistance (TMR) at large barrierthicknesses induced by this effect) is studied for the Fe/MgO/Fe magnetictunnel junctions (MTJ).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[260.0, 10, ',', 3],[262.0, 0, '%', 3]

Fe
###Strength of the symmetry spin filtering effect in magnetic tunnel junctions|Sergey V. Faleev,Stuart S. P. Parkin,Oleg N. Mryasov###
(1592209, 1592209)
 Based on the analysis of the band structure of bulk Feand complex band structure of MgO we predict emphnative for the symmetryspin filtering effect linear increase of the TMR in Fe/MgO/Fe MTJ withincreasing number of MgO layers, N.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[224.0, 10, ',', 2],[226.0, 0, '%', 2]

MgO
###Strength of the symmetry spin filtering effect in magnetic tunnel junctions|Sergey V. Faleev,Stuart S. P. Parkin,Oleg N. Mryasov###
(1592222, 1592223)
 Based on the analysis of the band structure of bulk Feand complex band structure of MgO we predict emphnative for the symmetryspin filtering effect linear increase of the TMR in Fe/MgO/Fe MTJ withincreasing number of MgO layers, N.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[210.0, 10, ',', 2],[212.0, 0, '%', 2]

Fe/MgO/Fe
###Strength of the symmetry spin filtering effect in magnetic tunnel junctions|Sergey V. Faleev,Stuart S. P. Parkin,Oleg N. Mryasov###
(1592259, 1592264)
 Based on the analysis of the band structure of bulk Feand complex band structure of MgO we predict emphnative for the symmetryspin filtering effect linear increase of the TMR in Fe/MgO/Fe MTJ withincreasing number of MgO layers, N.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[169.0, 10, ',', 2],[171.0, 0, '%', 2]

MgO
###Strength of the symmetry spin filtering effect in magnetic tunnel junctions|Sergey V. Faleev,Stuart S. P. Parkin,Oleg N. Mryasov###
(1592279, 1592280)
 Based on the analysis of the band structure of bulk Feand complex band structure of MgO we predict emphnative for the symmetryspin filtering effect linear increase of the TMR in Fe/MgO/Fe MTJ withincreasing number of MgO layers, N.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 10, ',', 2],[155.0, 0, '%', 2]

N
###Strength of the symmetry spin filtering effect in magnetic tunnel junctions|Sergey V. Faleev,Stuart S. P. Parkin,Oleg N. Mryasov###
(1592285, 1592285)
 Based on the analysis of the band structure of bulk Feand complex band structure of MgO we predict emphnative for the symmetryspin filtering effect linear increase of the TMR in Fe/MgO/Fe MTJ withincreasing number of MgO layers, N.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 10, ',', 2],[150.0, 0, '%', 2]

Fe/MgO/Fe
###Strength of the symmetry spin filtering effect in magnetic tunnel junctions|Sergey V. Faleev,Stuart S. P. Parkin,Oleg N. Mryasov###
(1592308, 1592313)
 emphAb initio calculations oftransmission functions performed for the Fe/MgO/Fe MTJ confirm our theoreticalpredictions for the strength of the symmetry spin filtering effect in broadrange of energies and N.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[120.0, 10, ',', 1],[122.0, 0, '%', 1]

N
###Strength of the symmetry spin filtering effect in magnetic tunnel junctions|Sergey V. Faleev,Stuart S. P. Parkin,Oleg N. Mryasov###
(1592359, 1592359)
 emphAb initio calculations oftransmission functions performed for the Fe/MgO/Fe MTJ confirm our theoreticalpredictions for the strength of the symmetry spin filtering effect in broadrange of energies and N.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 10, ',', 1],[76.0, 0, '%', 1]

Fe/MgO
###Strength of the symmetry spin filtering effect in magnetic tunnel junctions|Sergey V. Faleev,Stuart S. P. Parkin,Oleg N. Mryasov###
(1592413, 1592416)
 Our calculations also show that theemphcombination of the symmetry spin filtering effect and small surfacetransmission function in minority spin channel at the Fe/MgO interface isresponsible for large TMR>10,000% predicted for Fe/MgO/Fe MTJ for Ngeqslant 8.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[17.0, 10, ',', 0],[19.0, 0, '%', 0]

Fe/MgO/Fe
###Strength of the symmetry spin filtering effect in magnetic tunnel junctions|Sergey V. Faleev,Stuart S. P. Parkin,Oleg N. Mryasov###
(1592442, 1592447)
 Our calculations also show that theemphcombination of the symmetry spin filtering effect and small surfacetransmission function in minority spin channel at the Fe/MgO interface isresponsible for large TMR>10,000% predicted for Fe/MgO/Fe MTJ for Ngeqslant 8.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[9.0, 10, ',', 0],[7.0, 0, '%', 0]

N
###Strength of the symmetry spin filtering effect in magnetic tunnel junctions|Sergey V. Faleev,Stuart S. P. Parkin,Oleg N. Mryasov###
(1592455, 1592455)
 Our calculations also show that theemphcombination of the symmetry spin filtering effect and small surfacetransmission function in minority spin channel at the Fe/MgO interface isresponsible for large TMR>10,000% predicted for Fe/MgO/Fe MTJ for Ngeqslant 8.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 10, ',', 0],[20.0, 0, '%', 0]

Bi2Te
###Superconducting Bi2Te: pressure-induced universality in the (Bi2)m(Bi2Te3)n series|Ryan L. Stillwell,Zsolt Jenei,Samuel T. Weir,Yogesh K. Vohra,Jason R. Jeffries###
(1592561, 1592563)
Superconducting Bi2Te pressure-induced universality in the (Bi2)m<missing VAR>(Bi2Te3)n<missing VAR> series.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 8.6, 'K', 2],[221.0, 5.4, 'GPa', 3]

(Bi2)
###Superconducting Bi2Te: pressure-induced universality in the (Bi2)m(Bi2Te3)n series|Ryan L. Stillwell,Zsolt Jenei,Samuel T. Weir,Yogesh K. Vohra,Jason R. Jeffries###
(1592575, 1592578)
Superconducting Bi2Te pressure-induced universality in the (Bi2)m<missing VAR>(Bi2Te3)n<missing VAR> series.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 8.6, 'K', 2],[206.0, 5.4, 'GPa', 3]

(Bi2Te3)
###Superconducting Bi2Te: pressure-induced universality in the (Bi2)m(Bi2Te3)n series|Ryan L. Stillwell,Zsolt Jenei,Samuel T. Weir,Yogesh K. Vohra,Jason R. Jeffries###
(1592580, 1592585)
Superconducting Bi2Te pressure-induced universality in the (Bi2)m<missing VAR>(Bi2Te3)n<missing VAR> series.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 8.6, 'K', 2],[199.0, 5.4, 'GPa', 3]

Bi2Te
###Superconducting Bi2Te: pressure-induced universality in the (Bi2)m(Bi2Te3)n series|Ryan L. Stillwell,Zsolt Jenei,Samuel T. Weir,Yogesh K. Vohra,Jason R. Jeffries###
(1592612, 1592614)
 Using high-pressure magnetotransport techniques we have discoveredsuperconductivity in Bi2Te, a member of the infinitely adaptive (Bi2)m<missing VAR>(Bi2Te3)n<missing VAR>series, whose end members, Bi and Bi2Te3, can be tuned to display topologicalsurface states or superconductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 8.6, 'K', 1],[170.0, 5.4, 'GPa', 2]

(Bi2)
###Superconducting Bi2Te: pressure-induced universality in the (Bi2)m(Bi2Te3)n series|Ryan L. Stillwell,Zsolt Jenei,Samuel T. Weir,Yogesh K. Vohra,Jason R. Jeffries###
(1592629, 1592632)
 Using high-pressure magnetotransport techniques we have discoveredsuperconductivity in Bi2Te, a member of the infinitely adaptive (Bi2)m<missing VAR>(Bi2Te3)n<missing VAR>series, whose end members, Bi and Bi2Te3, can be tuned to display topologicalsurface states or superconductivity.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 8.6, 'K', 1],[152.0, 5.4, 'GPa', 2]

(Bi2Te3)
###Superconducting Bi2Te: pressure-induced universality in the (Bi2)m(Bi2Te3)n series|Ryan L. Stillwell,Zsolt Jenei,Samuel T. Weir,Yogesh K. Vohra,Jason R. Jeffries###
(1592634, 1592639)
 Using high-pressure magnetotransport techniques we have discoveredsuperconductivity in Bi2Te, a member of the infinitely adaptive (Bi2)m<missing VAR>(Bi2Te3)n<missing VAR>series, whose end members, Bi and Bi2Te3, can be tuned to display topologicalsurface states or superconductivity.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 8.6, 'K', 1],[145.0, 5.4, 'GPa', 2]

Bi
###Superconducting Bi2Te: pressure-induced universality in the (Bi2)m(Bi2Te3)n series|Ryan L. Stillwell,Zsolt Jenei,Samuel T. Weir,Yogesh K. Vohra,Jason R. Jeffries###
(1592653, 1592653)
 Using high-pressure magnetotransport techniques we have discoveredsuperconductivity in Bi2Te, a member of the infinitely adaptive (Bi2)m<missing VAR>(Bi2Te3)n<missing VAR>series, whose end members, Bi and Bi2Te3, can be tuned to display topologicalsurface states or superconductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 8.6, 'K', 1],[131.0, 5.4, 'GPa', 2]

Bi2Te3
###Superconducting Bi2Te: pressure-induced universality in the (Bi2)m(Bi2Te3)n series|Ryan L. Stillwell,Zsolt Jenei,Samuel T. Weir,Yogesh K. Vohra,Jason R. Jeffries###
(1592657, 1592660)
 Using high-pressure magnetotransport techniques we have discoveredsuperconductivity in Bi2Te, a member of the infinitely adaptive (Bi2)m<missing VAR>(Bi2Te3)n<missing VAR>series, whose end members, Bi and Bi2Te3, can be tuned to display topologicalsurface states or superconductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 8.6, 'K', 1],[124.0, 5.4, 'GPa', 2]

Bi2Te
###Superconducting Bi2Te: pressure-induced universality in the (Bi2)m(Bi2Te3)n series|Ryan L. Stillwell,Zsolt Jenei,Samuel T. Weir,Yogesh K. Vohra,Jason R. Jeffries###
(1592685, 1592687)
 Bi2Te has a maximum Tc 8.6 K at P 14.5G<missing VAR>Pa and goes through multiple high pressure phase transitions, ultimatelycollapsing into a bcc structure that suggests a universal behavior across theseries.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 8.6, 'K', 0],[97.0, 5.4, 'GPa', 1]

Tc
###Superconducting Bi2Te: pressure-induced universality in the (Bi2)m(Bi2Te3)n series|Ryan L. Stillwell,Zsolt Jenei,Samuel T. Weir,Yogesh K. Vohra,Jason R. Jeffries###
(1592695, 1592695)
 Bi2Te has a maximum Tc 8.6 K at P 14.5G<missing VAR>Pa and goes through multiple high pressure phase transitions, ultimatelycollapsing into a bcc structure that suggests a universal behavior across theseries.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[1.0, 8.6, 'K', 0],[89.0, 5.4, 'GPa', 1]

P
###Superconducting Bi2Te: pressure-induced universality in the (Bi2)m(Bi2Te3)n series|Ryan L. Stillwell,Zsolt Jenei,Samuel T. Weir,Yogesh K. Vohra,Jason R. Jeffries###
(1592700, 1592700)
 Bi2Te has a maximum Tc 8.6 K at P 14.5G<missing VAR>Pa and goes through multiple high pressure phase transitions, ultimatelycollapsing into a bcc structure that suggests a universal behavior across theseries.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 8.6, 'K', 0],[84.0, 5.4, 'GPa', 1]

Pa
###Superconducting Bi2Te: pressure-induced universality in the (Bi2)m(Bi2Te3)n series|Ryan L. Stillwell,Zsolt Jenei,Samuel T. Weir,Yogesh K. Vohra,Jason R. Jeffries###
(1592706, 1592706)
 Bi2Te has a maximum Tc 8.6 K at P 14.5G<missing VAR>Pa and goes through multiple high pressure phase transitions, ultimatelycollapsing into a bcc structure that suggests a universal behavior across theseries.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 8.6, 'K', 0],[78.0, 5.4, 'GPa', 1]

In
###Superconducting Bi2Te: pressure-induced universality in the (Bi2)m(Bi2Te3)n series|Ryan L. Stillwell,Zsolt Jenei,Samuel T. Weir,Yogesh K. Vohra,Jason R. Jeffries###
(1592817, 1592817)
 Inaddition, the linearity of Hc2(T) exceeds the Werthamer-Helfand-Hohenberglimit, even in the extreme spin-orbit scattering limit, yet is consistent withother strong spin-orbit materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 8.6, 'K', 2],[33.0, 5.4, 'GPa', 1]

WTe2
###Environmental Instability and Degradation of Single- and Few-Layer WTe2 Nanosheets in Ambient Conditions|Fan Ye,Jaesung Lee,Jin Hu,Zhiqiang Mao,Jiang Wei,Philip X. -L. Feng###
(1592990, 1592992)
Environmental Instability and Degradation of Single- and Few-Layer WTe2 Nanosheets in Ambient Conditions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 2, 'L', 3],[175.0, 3, 'L', 3],[207.0, 1, 'L', 4],[222.0, 3, 'L', 4],[236.0, 1, 'L', 5],[360.0, 0.5, 'nm', 7]

WTe2
###Environmental Instability and Degradation of Single- and Few-Layer WTe2 Nanosheets in Ambient Conditions|Fan Ye,Jaesung Lee,Jin Hu,Zhiqiang Mao,Jiang Wei,Philip X. -L. Feng###
(1593024, 1593026)
 Since the discovery of large, non-saturating magnetoresistance in bulk WTe2which allows microexfoliation, single- and few-layer WTe2 crystals haveattracted increasing interests.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 2, 'L', 2],[141.0, 3, 'L', 2],[173.0, 1, 'L', 3],[188.0, 3, 'L', 3],[202.0, 1, 'L', 4],[326.0, 0.5, 'nm', 6]

WTe2
###Environmental Instability and Degradation of Single- and Few-Layer WTe2 Nanosheets in Ambient Conditions|Fan Ye,Jaesung Lee,Jin Hu,Zhiqiang Mao,Jiang Wei,Philip X. -L. Feng###
(1593045, 1593047)
 Since the discovery of large, non-saturating magnetoresistance in bulk WTe2which allows microexfoliation, single- and few-layer WTe2 crystals haveattracted increasing interests.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 2, 'L', 2],[120.0, 3, 'L', 2],[152.0, 1, 'L', 3],[167.0, 3, 'L', 3],[181.0, 1, 'L', 4],[305.0, 0.5, 'nm', 6]

WTe2
###Environmental Instability and Degradation of Single- and Few-Layer WTe2 Nanosheets in Ambient Conditions|Fan Ye,Jaesung Lee,Jin Hu,Zhiqiang Mao,Jiang Wei,Philip X. -L. Feng###
(1593078, 1593080)
 However, as it mentioned in existing studies,WTe2 flakes appear to degrade in ambient conditions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 2, 'L', 1],[87.0, 3, 'L', 1],[119.0, 1, 'L', 2],[134.0, 3, 'L', 2],[148.0, 1, 'L', 3],[272.0, 0.5, 'nm', 5]

WTe2
###Environmental Instability and Degradation of Single- and Few-Layer WTe2 Nanosheets in Ambient Conditions|Fan Ye,Jaesung Lee,Jin Hu,Zhiqiang Mao,Jiang Wei,Philip X. -L. Feng###
(1593120, 1593122)
 Here we reportexperimental observations of saturating degradation in few-layer WTe2 throughRaman spectroscopy characterization and careful monitoring of the degradationof single-, bi- and tri-layer (1L<missing VAR>, 2L  3L) WTe2 over long time.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 2, 'L', 0],[45.0, 3, 'L', 0],[77.0, 1, 'L', 1],[92.0, 3, 'L', 1],[106.0, 1, 'L', 2],[230.0, 0.5, 'nm', 4]

WTe2
###Environmental Instability and Degradation of Single- and Few-Layer WTe2 Nanosheets in Ambient Conditions|Fan Ye,Jaesung Lee,Jin Hu,Zhiqiang Mao,Jiang Wei,Philip X. -L. Feng###
(1593170, 1593172)
 Here we reportexperimental observations of saturating degradation in few-layer WTe2 throughRaman spectroscopy characterization and careful monitoring of the degradationof single-, bi- and tri-layer (1L<missing VAR>, 2L  3L) WTe2 over long time.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 2, 'L', 0],[3.0, 3, 'L', 0],[27.0, 1, 'L', 1],[42.0, 3, 'L', 1],[56.0, 1, 'L', 2],[180.0, 0.5, 'nm', 4]

WTe2
###Environmental Instability and Degradation of Single- and Few-Layer WTe2 Nanosheets in Ambient Conditions|Fan Ye,Jaesung Lee,Jin Hu,Zhiqiang Mao,Jiang Wei,Philip X. -L. Feng###
(1593192, 1593194)
 Raman peakintensity decreases during WTe2 degradation and 1L flakes degrade faster than2L<missing VAR> and 3L flakes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 2, 'L', 1],[25.0, 3, 'L', 1],[5.0, 1, 'L', 0],[20.0, 3, 'L', 0],[34.0, 1, 'L', 1],[158.0, 0.5, 'nm', 3]

WTe2
###Environmental Instability and Degradation of Single- and Few-Layer WTe2 Nanosheets in Ambient Conditions|Fan Ye,Jaesung Lee,Jin Hu,Zhiqiang Mao,Jiang Wei,Philip X. -L. Feng###
(1593230, 1593232)
 The relatively faster degradation in 1L WTe2 could beattributed to low energy barrier of oxygen reaction with WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 2, 'L', 2],[63.0, 3, 'L', 2],[31.0, 1, 'L', 1],[16.0, 3, 'L', 1],[2.0, 1, 'L', 0],[120.0, 0.5, 'nm', 2]

WTe2
###Environmental Instability and Degradation of Single- and Few-Layer WTe2 Nanosheets in Ambient Conditions|Fan Ye,Jaesung Lee,Jin Hu,Zhiqiang Mao,Jiang Wei,Philip X. -L. Feng###
(1593257, 1593259)
 The relatively faster degradation in 1L WTe2 could beattributed to low energy barrier of oxygen reaction with WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 2, 'L', 2],[90.0, 3, 'L', 2],[58.0, 1, 'L', 1],[43.0, 3, 'L', 1],[29.0, 1, 'L', 0],[93.0, 0.5, 'nm', 2]

WTe2
###Environmental Instability and Degradation of Single- and Few-Layer WTe2 Nanosheets in Ambient Conditions|Fan Ye,Jaesung Lee,Jin Hu,Zhiqiang Mao,Jiang Wei,Philip X. -L. Feng###
(1593277, 1593279)
 We furtherinvestigate the degradation mechanisms of WTe2 using X<missing VAR>PS and AE<missing VAR>S and find thatoxidation of Te and W atoms is the main reason of WTe2 degradation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 2, 'L', 3],[110.0, 3, 'L', 3],[78.0, 1, 'L', 2],[63.0, 3, 'L', 2],[49.0, 1, 'L', 1],[73.0, 0.5, 'nm', 1]

PS
###Environmental Instability and Degradation of Single- and Few-Layer WTe2 Nanosheets in Ambient Conditions|Fan Ye,Jaesung Lee,Jin Hu,Zhiqiang Mao,Jiang Wei,Philip X. -L. Feng###
(1593284, 1593285)
 We furtherinvestigate the degradation mechanisms of WTe2 using X<missing VAR>PS and AE<missing VAR>S and find thatoxidation of Te and W atoms is the main reason of WTe2 degradation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 2, 'L', 3],[117.0, 3, 'L', 3],[85.0, 1, 'L', 2],[70.0, 3, 'L', 2],[56.0, 1, 'L', 1],[67.0, 0.5, 'nm', 1]

S
###Environmental Instability and Degradation of Single- and Few-Layer WTe2 Nanosheets in Ambient Conditions|Fan Ye,Jaesung Lee,Jin Hu,Zhiqiang Mao,Jiang Wei,Philip X. -L. Feng###
(1593291, 1593291)
 We furtherinvestigate the degradation mechanisms of WTe2 using X<missing VAR>PS and AE<missing VAR>S and find thatoxidation of Te and W atoms is the main reason of WTe2 degradation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 2, 'L', 3],[124.0, 3, 'L', 3],[92.0, 1, 'L', 2],[77.0, 3, 'L', 2],[63.0, 1, 'L', 1],[61.0, 0.5, 'nm', 1]

Te
###Environmental Instability and Degradation of Single- and Few-Layer WTe2 Nanosheets in Ambient Conditions|Fan Ye,Jaesung Lee,Jin Hu,Zhiqiang Mao,Jiang Wei,Philip X. -L. Feng###
(1593304, 1593304)
 We furtherinvestigate the degradation mechanisms of WTe2 using X<missing VAR>PS and AE<missing VAR>S and find thatoxidation of Te and W atoms is the main reason of WTe2 degradation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 2, 'L', 3],[137.0, 3, 'L', 3],[105.0, 1, 'L', 2],[90.0, 3, 'L', 2],[76.0, 1, 'L', 1],[48.0, 0.5, 'nm', 1]

W
###Environmental Instability and Degradation of Single- and Few-Layer WTe2 Nanosheets in Ambient Conditions|Fan Ye,Jaesung Lee,Jin Hu,Zhiqiang Mao,Jiang Wei,Philip X. -L. Feng###
(1593308, 1593308)
 We furtherinvestigate the degradation mechanisms of WTe2 using X<missing VAR>PS and AE<missing VAR>S and find thatoxidation of Te and W atoms is the main reason of WTe2 degradation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 2, 'L', 3],[141.0, 3, 'L', 3],[109.0, 1, 'L', 2],[94.0, 3, 'L', 2],[80.0, 1, 'L', 1],[44.0, 0.5, 'nm', 1]

WTe2
###Environmental Instability and Degradation of Single- and Few-Layer WTe2 Nanosheets in Ambient Conditions|Fan Ye,Jaesung Lee,Jin Hu,Zhiqiang Mao,Jiang Wei,Philip X. -L. Feng###
(1593322, 1593324)
 We furtherinvestigate the degradation mechanisms of WTe2 using X<missing VAR>PS and AE<missing VAR>S and find thatoxidation of Te and W atoms is the main reason of WTe2 degradation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 2, 'L', 3],[155.0, 3, 'L', 3],[123.0, 1, 'L', 2],[108.0, 3, 'L', 2],[94.0, 1, 'L', 1],[28.0, 0.5, 'nm', 1]

In
###Environmental Instability and Degradation of Single- and Few-Layer WTe2 Nanosheets in Ambient Conditions|Fan Ye,Jaesung Lee,Jin Hu,Zhiqiang Mao,Jiang Wei,Philip X. -L. Feng###
(1593329, 1593329)
 Inaddition, we observe oxidation occurs only in the depth of 0.5nm near thesurface, and the oxidized WTe2 surface could help prevent inner layers fromfurther degradation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 2, 'L', 4],[162.0, 3, 'L', 4],[130.0, 1, 'L', 3],[115.0, 3, 'L', 3],[101.0, 1, 'L', 2],[23.0, 0.5, 'nm', 0]

WTe2
###Environmental Instability and Degradation of Single- and Few-Layer WTe2 Nanosheets in Ambient Conditions|Fan Ye,Jaesung Lee,Jin Hu,Zhiqiang Mao,Jiang Wei,Philip X. -L. Feng###
(1593368, 1593370)
 Inaddition, we observe oxidation occurs only in the depth of 0.5nm near thesurface, and the oxidized WTe2 surface could help prevent inner layers fromfurther degradation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[203.0, 2, 'L', 4],[201.0, 3, 'L', 4],[169.0, 1, 'L', 3],[154.0, 3, 'L', 3],[140.0, 1, 'L', 2],[16.0, 0.5, 'nm', 0]

Fe1-xCo
###Non-Fermi liquid behavior of electrical resistivity close to the nematic critical point in Fe$_{1-x}$Co$_x$Se and FeSe$_{1-y}$S$_y$|Takahiro Urata,Yoichi Tanabe,Khuong Kim Huynh,Hidetoshi Oguro,Kazuo Watanabe,Katsumi Tanigaki###
(1593428, 1593432)
Non-Fermi liquid behavior of electrical resistivity close to the nematic critical point in Fe1-xCox<missing VAR>Se and FeSe1-ySy<missing VAR>.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[158.0, 0.16, 'below', 2],[159.0, 40, 'K', 2],[189.0, 10, 'K', 2],[237.0, 0.16, 'and', 3],[328.0, 0.036, 'and', 4]

Se
###Non-Fermi liquid behavior of electrical resistivity close to the nematic critical point in Fe$_{1-x}$Co$_x$Se and FeSe$_{1-y}$S$_y$|Takahiro Urata,Yoichi Tanabe,Khuong Kim Huynh,Hidetoshi Oguro,Kazuo Watanabe,Katsumi Tanigaki###
(1593434, 1593434)
Non-Fermi liquid behavior of electrical resistivity close to the nematic critical point in Fe1-xCox<missing VAR>Se and FeSe1-ySy<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 0.16, 'below', 2],[157.0, 40, 'K', 2],[187.0, 10, 'K', 2],[235.0, 0.16, 'and', 3],[326.0, 0.036, 'and', 4]

FeSe1-yS
###Non-Fermi liquid behavior of electrical resistivity close to the nematic critical point in Fe$_{1-x}$Co$_x$Se and FeSe$_{1-y}$S$_y$|Takahiro Urata,Yoichi Tanabe,Khuong Kim Huynh,Hidetoshi Oguro,Kazuo Watanabe,Katsumi Tanigaki###
(1593438, 1593443)
Non-Fermi liquid behavior of electrical resistivity close to the nematic critical point in Fe1-xCox<missing VAR>Se and FeSe1-ySy<missing VAR>.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[147.0, 0.16, 'below', 2],[148.0, 40, 'K', 2],[178.0, 10, 'K', 2],[226.0, 0.16, 'and', 3],[317.0, 0.036, 'and', 4]

Fe1-xCo
###Non-Fermi liquid behavior of electrical resistivity close to the nematic critical point in Fe$_{1-x}$Co$_x$Se and FeSe$_{1-y}$S$_y$|Takahiro Urata,Yoichi Tanabe,Khuong Kim Huynh,Hidetoshi Oguro,Kazuo Watanabe,Katsumi Tanigaki###
(1593464, 1593468)
 Temperature dependence of resistivity of single crystals ofFe1-xCox<missing VAR>Se and FeSe1-ySy<missing VAR> is studied in detail under zero andhigh magnetic field (magnetoresistance), the latter of which enables to monitorthe temperature (T) evolution of resistivity below the onset ofsuperconducting transition temperature (T<missing VAR>rm c).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[122.0, 0.16, 'below', 1],[123.0, 40, 'K', 1],[153.0, 10, 'K', 1],[201.0, 0.16, 'and', 2],[292.0, 0.036, 'and', 3]

Se
###Non-Fermi liquid behavior of electrical resistivity close to the nematic critical point in Fe$_{1-x}$Co$_x$Se and FeSe$_{1-y}$S$_y$|Takahiro Urata,Yoichi Tanabe,Khuong Kim Huynh,Hidetoshi Oguro,Kazuo Watanabe,Katsumi Tanigaki###
(1593470, 1593470)
 Temperature dependence of resistivity of single crystals ofFe1-xCox<missing VAR>Se and FeSe1-ySy<missing VAR> is studied in detail under zero andhigh magnetic field (magnetoresistance), the latter of which enables to monitorthe temperature (T) evolution of resistivity below the onset ofsuperconducting transition temperature (T<missing VAR>rm c).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 0.16, 'below', 1],[121.0, 40, 'K', 1],[151.0, 10, 'K', 1],[199.0, 0.16, 'and', 2],[290.0, 0.036, 'and', 3]

FeSe1-yS
###Non-Fermi liquid behavior of electrical resistivity close to the nematic critical point in Fe$_{1-x}$Co$_x$Se and FeSe$_{1-y}$S$_y$|Takahiro Urata,Yoichi Tanabe,Khuong Kim Huynh,Hidetoshi Oguro,Kazuo Watanabe,Katsumi Tanigaki###
(1593474, 1593479)
 Temperature dependence of resistivity of single crystals ofFe1-xCox<missing VAR>Se and FeSe1-ySy<missing VAR> is studied in detail under zero andhigh magnetic field (magnetoresistance), the latter of which enables to monitorthe temperature (T) evolution of resistivity below the onset ofsuperconducting transition temperature (T<missing VAR>rm c).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[111.0, 0.16, 'below', 1],[112.0, 40, 'K', 1],[142.0, 10, 'K', 1],[190.0, 0.16, 'and', 2],[281.0, 0.036, 'and', 3]

In
###Non-Fermi liquid behavior of electrical resistivity close to the nematic critical point in Fe$_{1-x}$Co$_x$Se and FeSe$_{1-y}$S$_y$|Takahiro Urata,Yoichi Tanabe,Khuong Kim Huynh,Hidetoshi Oguro,Kazuo Watanabe,Katsumi Tanigaki###
(1593560, 1593560)
 In FeSe1-ySy<missing VAR>,T<missing VAR>-linear dependence of resistivity is prominent in y<missing VAR>  0.160 below 40 K,whereas it changes to a Fermi-liquid(FL)-like T<missing VAR>2 one below 10 K in y<missing VAR> 0.212.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 0.16, 'below', 0],[31.0, 40, 'K', 0],[61.0, 10, 'K', 0],[109.0, 0.16, 'and', 1],[200.0, 0.036, 'and', 2]

FeSe1-yS
###Non-Fermi liquid behavior of electrical resistivity close to the nematic critical point in Fe$_{1-x}$Co$_x$Se and FeSe$_{1-y}$S$_y$|Takahiro Urata,Yoichi Tanabe,Khuong Kim Huynh,Hidetoshi Oguro,Kazuo Watanabe,Katsumi Tanigaki###
(1593562, 1593567)
 In FeSe1-ySy<missing VAR>,T<missing VAR>-linear dependence of resistivity is prominent in y<missing VAR>  0.160 below 40 K,whereas it changes to a Fermi-liquid(FL)-like T<missing VAR>2 one below 10 K in y<missing VAR> 0.212.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[23.0, 0.16, 'below', 0],[24.0, 40, 'K', 0],[54.0, 10, 'K', 0],[102.0, 0.16, 'and', 1],[193.0, 0.036, 'and', 2]

F
###Non-Fermi liquid behavior of electrical resistivity close to the nematic critical point in Fe$_{1-x}$Co$_x$Se and FeSe$_{1-y}$S$_y$|Takahiro Urata,Yoichi Tanabe,Khuong Kim Huynh,Hidetoshi Oguro,Kazuo Watanabe,Katsumi Tanigaki###
(1593609, 1593609)
 In FeSe1-ySy<missing VAR>,T<missing VAR>-linear dependence of resistivity is prominent in y<missing VAR>  0.160 below 40 K,whereas it changes to a Fermi-liquid(FL)-like T<missing VAR>2 one below 10 K in y<missing VAR> 0.212.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 0.16, 'below', 0],[18.0, 40, 'K', 0],[12.0, 10, 'K', 0],[60.0, 0.16, 'and', 1],[151.0, 0.036, 'and', 2]

P
###Non-Fermi liquid behavior of electrical resistivity close to the nematic critical point in Fe$_{1-x}$Co$_x$Se and FeSe$_{1-y}$S$_y$|Takahiro Urata,Yoichi Tanabe,Khuong Kim Huynh,Hidetoshi Oguro,Kazuo Watanabe,Katsumi Tanigaki###
(1593649, 1593649)
 These suggest that the quantum critical point (Q<missing VAR>CP) originating from theelectronic nematicity resides around y<missing VAR>  0.160 and the fluctuation in Q<missing VAR>CPgives rise anomalous T<missing VAR>-linear dependence in resistivity in a wide T<missing VAR> range.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 0.16, 'below', 1],[58.0, 40, 'K', 1],[28.0, 10, 'K', 1],[20.0, 0.16, 'and', 0],[111.0, 0.036, 'and', 1]

CP
###Non-Fermi liquid behavior of electrical resistivity close to the nematic critical point in Fe$_{1-x}$Co$_x$Se and FeSe$_{1-y}$S$_y$|Takahiro Urata,Yoichi Tanabe,Khuong Kim Huynh,Hidetoshi Oguro,Kazuo Watanabe,Katsumi Tanigaki###
(1593678, 1593679)
 These suggest that the quantum critical point (Q<missing VAR>CP) originating from theelectronic nematicity resides around y<missing VAR>  0.160 and the fluctuation in Q<missing VAR>CPgives rise anomalous T<missing VAR>-linear dependence in resistivity in a wide T<missing VAR> range.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 0.16, 'below', 1],[87.0, 40, 'K', 1],[57.0, 10, 'K', 1],[9.0, 0.16, 'and', 0],[81.0, 0.036, 'and', 1]

In
###Non-Fermi liquid behavior of electrical resistivity close to the nematic critical point in Fe$_{1-x}$Co$_x$Se and FeSe$_{1-y}$S$_y$|Takahiro Urata,Yoichi Tanabe,Khuong Kim Huynh,Hidetoshi Oguro,Kazuo Watanabe,Katsumi Tanigaki###
(1593710, 1593710)
In Fe1-xCox<missing VAR>Se, resistivity gradually changes from linear- to quadratic-T<missing VAR>-dependent one at low temperatures in the range between x<missing VAR>  0.036 and0.075.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 0.16, 'below', 2],[119.0, 40, 'K', 2],[89.0, 10, 'K', 2],[41.0, 0.16, 'and', 1],[50.0, 0.036, 'and', 0]

Fe1-xCo
###Non-Fermi liquid behavior of electrical resistivity close to the nematic critical point in Fe$_{1-x}$Co$_x$Se and FeSe$_{1-y}$S$_y$|Takahiro Urata,Yoichi Tanabe,Khuong Kim Huynh,Hidetoshi Oguro,Kazuo Watanabe,Katsumi Tanigaki###
(1593712, 1593716)
In Fe1-xCox<missing VAR>Se, resistivity gradually changes from linear- to quadratic-T<missing VAR>-dependent one at low temperatures in the range between x<missing VAR>  0.036 and0.075.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[122.0, 0.16, 'below', 2],[121.0, 40, 'K', 2],[91.0, 10, 'K', 2],[43.0, 0.16, 'and', 1],[44.0, 0.036, 'and', 0]

Se
###Non-Fermi liquid behavior of electrical resistivity close to the nematic critical point in Fe$_{1-x}$Co$_x$Se and FeSe$_{1-y}$S$_y$|Takahiro Urata,Yoichi Tanabe,Khuong Kim Huynh,Hidetoshi Oguro,Kazuo Watanabe,Katsumi Tanigaki###
(1593718, 1593718)
In Fe1-xCox<missing VAR>Se, resistivity gradually changes from linear- to quadratic-T<missing VAR>-dependent one at low temperatures in the range between x<missing VAR>  0.036 and0.075.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 0.16, 'below', 2],[127.0, 40, 'K', 2],[97.0, 10, 'K', 2],[49.0, 0.16, 'and', 1],[42.0, 0.036, 'and', 0]

CP
###Non-Fermi liquid behavior of electrical resistivity close to the nematic critical point in Fe$_{1-x}$Co$_x$Se and FeSe$_{1-y}$S$_y$|Takahiro Urata,Yoichi Tanabe,Khuong Kim Huynh,Hidetoshi Oguro,Kazuo Watanabe,Katsumi Tanigaki###
(1593787, 1593788)
 These could be interpreted by scenarios of both the nematic Q<missing VAR>CP and thecrossover in the ground states between the orthorhombic nematic phase and thetetragonal phase.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[197.0, 0.16, 'below', 3],[196.0, 40, 'K', 3],[166.0, 10, 'K', 3],[118.0, 0.16, 'and', 2],[27.0, 0.036, 'and', 1]

CP
###Non-Fermi liquid behavior of electrical resistivity close to the nematic critical point in Fe$_{1-x}$Co$_x$Se and FeSe$_{1-y}$S$_y$|Takahiro Urata,Yoichi Tanabe,Khuong Kim Huynh,Hidetoshi Oguro,Kazuo Watanabe,Katsumi Tanigaki###
(1593867, 1593868)
 The anomalies found as T<missing VAR>-linear resistivity are discussedin terms of orbital and spin fluctuation arising from the nematic Q<missing VAR>CP.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[277.0, 0.16, 'below', 4],[276.0, 40, 'K', 4],[246.0, 10, 'K', 4],[198.0, 0.16, 'and', 3],[107.0, 0.036, 'and', 2]

YBa2Cu3O7/LaCaMnO3
###Superconductor to Mott insulator transition in YBa$_2$Cu$_3$O$_7$/LaCaMnO$_3$ heterostructures|B. A. Gray,S. Middey,G. Conti,A. X. Gray,C. -T. Kuo,A. M. Kaiser,S. Ueda,K. Kobayashi,D. Meyers,M. Kareev,I. C. Tung,Jian Liu,C. S. Fadley,J. Chakhalian,J. W. Freeland###
(1593891, 1593903)
Superconductor to Mott insulator transition in YBa2Cu3O7/LaCaMnO3 heterostructures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

SI
###Superconductor to Mott insulator transition in YBa$_2$Cu$_3$O$_7$/LaCaMnO$_3$ heterostructures|B. A. Gray,S. Middey,G. Conti,A. X. Gray,C. -T. Kuo,A. M. Kaiser,S. Ueda,K. Kobayashi,D. Meyers,M. Kareev,I. C. Tung,Jian Liu,C. S. Fadley,J. Chakhalian,J. W. Freeland###
(1593919, 1593920)
 The superconductor-to-insulator transition (SIT) induced by means such asexternal magnetic fields, disorder or spatial confinement is a vividillustration of a quantum phase transition dramatically affecting thesuperconducting order parameter.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Superconductor to Mott insulator transition in YBa$_2$Cu$_3$O$_7$/LaCaMnO$_3$ heterostructures|B. A. Gray,S. Middey,G. Conti,A. X. Gray,C. -T. Kuo,A. M. Kaiser,S. Ueda,K. Kobayashi,D. Meyers,M. Kareev,I. C. Tung,Jian Liu,C. S. Fadley,J. Chakhalian,J. W. Freeland###
(1593983, 1593983)
 In pursuit of a new realization of the SIT<missing VAR> byinterfacial charge transfer, we developed extremely thin superlattices composedof high Tc superconductor YBa2Cu3O7 (YBCO) and colossalmagnetoresistance ferromagnet La0.67Ca0.33MnO3 (LCMO).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SI
###Superconductor to Mott insulator transition in YBa$_2$Cu$_3$O$_7$/LaCaMnO$_3$ heterostructures|B. A. Gray,S. Middey,G. Conti,A. X. Gray,C. -T. Kuo,A. M. Kaiser,S. Ueda,K. Kobayashi,D. Meyers,M. Kareev,I. C. Tung,Jian Liu,C. S. Fadley,J. Chakhalian,J. W. Freeland###
(1593999, 1594000)
 In pursuit of a new realization of the SIT<missing VAR> byinterfacial charge transfer, we developed extremely thin superlattices composedof high Tc superconductor YBa2Cu3O7 (YBCO) and colossalmagnetoresistance ferromagnet La0.67Ca0.33MnO3 (LCMO).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YBa2Cu3O7
###Superconductor to Mott insulator transition in YBa$_2$Cu$_3$O$_7$/LaCaMnO$_3$ heterostructures|B. A. Gray,S. Middey,G. Conti,A. X. Gray,C. -T. Kuo,A. M. Kaiser,S. Ueda,K. Kobayashi,D. Meyers,M. Kareev,I. C. Tung,Jian Liu,C. S. Fadley,J. Chakhalian,J. W. Freeland###
(1594035, 1594041)
 In pursuit of a new realization of the SIT<missing VAR> byinterfacial charge transfer, we developed extremely thin superlattices composedof high Tc superconductor YBa2Cu3O7 (YBCO) and colossalmagnetoresistance ferromagnet La0.67Ca0.33MnO3 (LCMO).
Featurization terminated normally.
0,0,0,0,0,0,0,0.5384615384615384,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23076923076923078,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15384615384615385,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(YBCO)
###Superconductor to Mott insulator transition in YBa$_2$Cu$_3$O$_7$/LaCaMnO$_3$ heterostructures|B. A. Gray,S. Middey,G. Conti,A. X. Gray,C. -T. Kuo,A. M. Kaiser,S. Ueda,K. Kobayashi,D. Meyers,M. Kareev,I. C. Tung,Jian Liu,C. S. Fadley,J. Chakhalian,J. W. Freeland###
(1594043, 1594048)
 In pursuit of a new realization of the SIT<missing VAR> byinterfacial charge transfer, we developed extremely thin superlattices composedof high Tc superconductor YBa2Cu3O7 (YBCO) and colossalmagnetoresistance ferromagnet La0.67Ca0.33MnO3 (LCMO).
Featurization successful!
0,0,0,0,0.25,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.67Ca0.33MnO3
###Superconductor to Mott insulator transition in YBa$_2$Cu$_3$O$_7$/LaCaMnO$_3$ heterostructures|B. A. Gray,S. Middey,G. Conti,A. X. Gray,C. -T. Kuo,A. M. Kaiser,S. Ueda,K. Kobayashi,D. Meyers,M. Kareev,I. C. Tung,Jian Liu,C. S. Fadley,J. Chakhalian,J. W. Freeland###
(1594059, 1594065)
 In pursuit of a new realization of the SIT<missing VAR> byinterfacial charge transfer, we developed extremely thin superlattices composedof high Tc superconductor YBa2Cu3O7 (YBCO) and colossalmagnetoresistance ferromagnet La0.67Ca0.33MnO3 (LCMO).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.066,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.134,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Superconductor to Mott insulator transition in YBa$_2$Cu$_3$O$_7$/LaCaMnO$_3$ heterostructures|B. A. Gray,S. Middey,G. Conti,A. X. Gray,C. -T. Kuo,A. M. Kaiser,S. Ueda,K. Kobayashi,D. Meyers,M. Kareev,I. C. Tung,Jian Liu,C. S. Fadley,J. Chakhalian,J. W. Freeland###
(1594071, 1594071)
 In pursuit of a new realization of the SIT<missing VAR> byinterfacial charge transfer, we developed extremely thin superlattices composedof high Tc superconductor YBa2Cu3O7 (YBCO) and colossalmagnetoresistance ferromagnet La0.67Ca0.33MnO3 (LCMO).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Superconductor to Mott insulator transition in YBa$_2$Cu$_3$O$_7$/LaCaMnO$_3$ heterostructures|B. A. Gray,S. Middey,G. Conti,A. X. Gray,C. -T. Kuo,A. M. Kaiser,S. Ueda,K. Kobayashi,D. Meyers,M. Kareev,I. C. Tung,Jian Liu,C. S. Fadley,J. Chakhalian,J. W. Freeland###
(1594192, 1594192)
 By usinglinearly polarized resonant X<missing VAR>-ray absorption spectroscopy and magnetic circulardichroism, combined with hard X<missing VAR>-ray photoelectron spectroscopy, we derived acomplete picture of the interfacial carrier doping in cuprate and manganiteatomic layers, leading to the transition from superconducting to an unusualMott insulating state emerging with the increase of LCMO layer thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Superconductor to Mott insulator transition in YBa$_2$Cu$_3$O$_7$/LaCaMnO$_3$ heterostructures|B. A. Gray,S. Middey,G. Conti,A. X. Gray,C. -T. Kuo,A. M. Kaiser,S. Ueda,K. Kobayashi,D. Meyers,M. Kareev,I. C. Tung,Jian Liu,C. S. Fadley,J. Chakhalian,J. W. Freeland###
(1594199, 1594199)
 Inaddition, contrary to the common perception that only transition metal ions mayresponse to the charge transfer process, we found that charge is also activelycompensated by rare-earth and alkaline-earth metal ions of the interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Effect of aging-induced disorder on the quantum transport properties of atomically thin WTe$_{2}$|W. L. Liu,M. L. Chen,X. X. Li,S. Dubey,T. Xiong,Z. M. Dai,J. Yin,W. L. Guo,J. L. Ma,Y. N. Chen,J. Tan,D. Li,Z. H. Wang,W. Li,V. Bouchiat,D. M. Sun,Z. Han,Z. D. Zhang###
(1594397, 1594399)
Effect of aging-induced disorder on the quantum transport properties of atomically thin WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cs
###Effect of aging-induced disorder on the quantum transport properties of atomically thin WTe$_{2}$|W. L. Liu,M. L. Chen,X. X. Li,S. Dubey,T. Xiong,Z. M. Dai,J. Yin,W. L. Guo,J. L. Ma,Y. N. Chen,J. Tan,D. Li,Z. H. Wang,W. Li,V. Bouchiat,D. M. Sun,Z. Han,Z. D. Zhang###
(1594420, 1594420)
 Atomically thin layers of transition-metal dicalcogenides (TMDCs) are oftenknown to be metastable in the ambient atmosphere.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Effect of aging-induced disorder on the quantum transport properties of atomically thin WTe$_{2}$|W. L. Liu,M. L. Chen,X. X. Li,S. Dubey,T. Xiong,Z. M. Dai,J. Yin,W. L. Guo,J. L. Ma,Y. N. Chen,J. Tan,D. Li,Z. H. Wang,W. Li,V. Bouchiat,D. M. Sun,Z. Han,Z. D. Zhang###
(1594509, 1594511)
 Here, we demonstrate asystematic study of atomically thin WTe2 in its low temperature quantumelectronic transport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Effect of aging-induced disorder on the quantum transport properties of atomically thin WTe$_{2}$|W. L. Liu,M. L. Chen,X. X. Li,S. Dubey,T. Xiong,Z. M. Dai,J. Yin,W. L. Guo,J. L. Ma,Y. N. Chen,J. Tan,D. Li,Z. H. Wang,W. Li,V. Bouchiat,D. M. Sun,Z. Han,Z. D. Zhang###
(1594549, 1594551)
 Strikingly, while the temperature dependenceof few layered WTe2 showed clear metallic tendency in the fresh state,degraded devices first exhibited a re-entrant insulating behavior, and finallyentered a fully insulating state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Effect of aging-induced disorder on the quantum transport properties of atomically thin WTe$_{2}$|W. L. Liu,M. L. Chen,X. X. Li,S. Dubey,T. Xiong,Z. M. Dai,J. Yin,W. L. Guo,J. L. Ma,Y. N. Chen,J. Tan,D. Li,Z. H. Wang,W. Li,V. Bouchiat,D. M. Sun,Z. Han,Z. D. Zhang###
(1594686, 1594688)
Real-time Raman scattering measurement, together with transmission electronmicroscopy studies done before and after air degradation of atomically thinWTe2 further confirmed that the material gradually form amorphous islands.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Effect of aging-induced disorder on the quantum transport properties of atomically thin WTe$_{2}$|W. L. Liu,M. L. Chen,X. X. Li,S. Dubey,T. Xiong,Z. M. Dai,J. Yin,W. L. Guo,J. L. Ma,Y. N. Chen,J. Tan,D. Li,Z. H. Wang,W. Li,V. Bouchiat,D. M. Sun,Z. Han,Z. D. Zhang###
(1594786, 1594788)
 Our study reveals for the firsttime the correlation between the unusual magnetotransport and disorder infew-layered WTe2, which is indispensable in providing guidance on itsfuture devices application.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Gate-Tunable Negative Longitudinal Magnetoresistance in the Predicted Type-II Weyl Semimetal WTe2|Yaojia Wang,Erfu Liu,Huimei Liu,Yiming Pan,Longqiang Zhang,Junwen Zeng,Yajun Fu,Miao Wang,Kang Xu,Zhong Huang,Zhenlin Wang,Haizhou Lu,Dingyu Xing,Baigeng Wang,Xiangang Wan,Feng Miao###
(1594841, 1594842)
Gate-Tunable Negative Longitudinal Magnetoresistance in the Predicted Type-II Weyl Semimetal WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Gate-Tunable Negative Longitudinal Magnetoresistance in the Predicted Type-II Weyl Semimetal WTe2|Yaojia Wang,Erfu Liu,Huimei Liu,Yiming Pan,Longqiang Zhang,Junwen Zeng,Yajun Fu,Miao Wang,Kang Xu,Zhong Huang,Zhenlin Wang,Haizhou Lu,Dingyu Xing,Baigeng Wang,Xiangang Wan,Feng Miao###
(1594848, 1594850)
Gate-Tunable Negative Longitudinal Magnetoresistance in the Predicted Type-II Weyl Semimetal WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Gate-Tunable Negative Longitudinal Magnetoresistance in the Predicted Type-II Weyl Semimetal WTe2|Yaojia Wang,Erfu Liu,Huimei Liu,Yiming Pan,Longqiang Zhang,Junwen Zeng,Yajun Fu,Miao Wang,Kang Xu,Zhong Huang,Zhenlin Wang,Haizhou Lu,Dingyu Xing,Baigeng Wang,Xiangang Wan,Feng Miao###
(1594893, 1594893)
 As a new state of matter, a Weylsemimetal (WSM), particularly a type-II WSM<missing VAR>, hosts Weyl fermions as emergentquasiparticles and may harbor novel electrical transport properties because ofthe exotic Fermi surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WS
###Gate-Tunable Negative Longitudinal Magnetoresistance in the Predicted Type-II Weyl Semimetal WTe2|Yaojia Wang,Erfu Liu,Huimei Liu,Yiming Pan,Longqiang Zhang,Junwen Zeng,Yajun Fu,Miao Wang,Kang Xu,Zhong Huang,Zhenlin Wang,Haizhou Lu,Dingyu Xing,Baigeng Wang,Xiangang Wan,Feng Miao###
(1594914, 1594915)
 As a new state of matter, a Weylsemimetal (WSM), particularly a type-II WSM<missing VAR>, hosts Weyl fermions as emergentquasiparticles and may harbor novel electrical transport properties because ofthe exotic Fermi surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Gate-Tunable Negative Longitudinal Magnetoresistance in the Predicted Type-II Weyl Semimetal WTe2|Yaojia Wang,Erfu Liu,Huimei Liu,Yiming Pan,Longqiang Zhang,Junwen Zeng,Yajun Fu,Miao Wang,Kang Xu,Zhong Huang,Zhenlin Wang,Haizhou Lu,Dingyu Xing,Baigeng Wang,Xiangang Wan,Feng Miao###
(1594926, 1594927)
 As a new state of matter, a Weylsemimetal (WSM), particularly a type-II WSM<missing VAR>, hosts Weyl fermions as emergentquasiparticles and may harbor novel electrical transport properties because ofthe exotic Fermi surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WS
###Gate-Tunable Negative Longitudinal Magnetoresistance in the Predicted Type-II Weyl Semimetal WTe2|Yaojia Wang,Erfu Liu,Huimei Liu,Yiming Pan,Longqiang Zhang,Junwen Zeng,Yajun Fu,Miao Wang,Kang Xu,Zhong Huang,Zhenlin Wang,Haizhou Lu,Dingyu Xing,Baigeng Wang,Xiangang Wan,Feng Miao###
(1594929, 1594930)
 As a new state of matter, a Weylsemimetal (WSM), particularly a type-II WSM<missing VAR>, hosts Weyl fermions as emergentquasiparticles and may harbor novel electrical transport properties because ofthe exotic Fermi surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Gate-Tunable Negative Longitudinal Magnetoresistance in the Predicted Type-II Weyl Semimetal WTe2|Yaojia Wang,Erfu Liu,Huimei Liu,Yiming Pan,Longqiang Zhang,Junwen Zeng,Yajun Fu,Miao Wang,Kang Xu,Zhong Huang,Zhenlin Wang,Haizhou Lu,Dingyu Xing,Baigeng Wang,Xiangang Wan,Feng Miao###
(1594984, 1594985)
 Nevertheless, such a type-II WSM<missing VAR> material has notbeen experimentally observed in nature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WS
###Gate-Tunable Negative Longitudinal Magnetoresistance in the Predicted Type-II Weyl Semimetal WTe2|Yaojia Wang,Erfu Liu,Huimei Liu,Yiming Pan,Longqiang Zhang,Junwen Zeng,Yajun Fu,Miao Wang,Kang Xu,Zhong Huang,Zhenlin Wang,Haizhou Lu,Dingyu Xing,Baigeng Wang,Xiangang Wan,Feng Miao###
(1594987, 1594988)
 Nevertheless, such a type-II WSM<missing VAR> material has notbeen experimentally observed in nature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Gate-Tunable Negative Longitudinal Magnetoresistance in the Predicted Type-II Weyl Semimetal WTe2|Yaojia Wang,Erfu Liu,Huimei Liu,Yiming Pan,Longqiang Zhang,Junwen Zeng,Yajun Fu,Miao Wang,Kang Xu,Zhong Huang,Zhenlin Wang,Haizhou Lu,Dingyu Xing,Baigeng Wang,Xiangang Wan,Feng Miao###
(1595009, 1595009)
 In this work, by performing systematicmagneto-transport studies on thin films of a predicted material candidate WTe2,we observe notable angle-sensitive (between the electric and magnetic fields)negative longitudinal magnetoresistance (MR), which can likely be attributed tothe chiral anomaly in WSM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Gate-Tunable Negative Longitudinal Magnetoresistance in the Predicted Type-II Weyl Semimetal WTe2|Yaojia Wang,Erfu Liu,Huimei Liu,Yiming Pan,Longqiang Zhang,Junwen Zeng,Yajun Fu,Miao Wang,Kang Xu,Zhong Huang,Zhenlin Wang,Haizhou Lu,Dingyu Xing,Baigeng Wang,Xiangang Wan,Feng Miao###
(1595045, 1595047)
 In this work, by performing systematicmagneto-transport studies on thin films of a predicted material candidate WTe2,we observe notable angle-sensitive (between the electric and magnetic fields)negative longitudinal magnetoresistance (MR), which can likely be attributed tothe chiral anomaly in WSM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WS
###Gate-Tunable Negative Longitudinal Magnetoresistance in the Predicted Type-II Weyl Semimetal WTe2|Yaojia Wang,Erfu Liu,Huimei Liu,Yiming Pan,Longqiang Zhang,Junwen Zeng,Yajun Fu,Miao Wang,Kang Xu,Zhong Huang,Zhenlin Wang,Haizhou Lu,Dingyu Xing,Baigeng Wang,Xiangang Wan,Feng Miao###
(1595109, 1595110)
 In this work, by performing systematicmagneto-transport studies on thin films of a predicted material candidate WTe2,we observe notable angle-sensitive (between the electric and magnetic fields)negative longitudinal magnetoresistance (MR), which can likely be attributed tothe chiral anomaly in WSM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Gate-Tunable Negative Longitudinal Magnetoresistance in the Predicted Type-II Weyl Semimetal WTe2|Yaojia Wang,Erfu Liu,Huimei Liu,Yiming Pan,Longqiang Zhang,Junwen Zeng,Yajun Fu,Miao Wang,Kang Xu,Zhong Huang,Zhenlin Wang,Haizhou Lu,Dingyu Xing,Baigeng Wang,Xiangang Wan,Feng Miao###
(1595183, 1595184)
 This phenomenon also exhibits strong planarorientation dependence with the absence of negative longitudinal MR along thetungsten chains (a axis), which is consistent with the distinctive feature of atype-II WSM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WS
###Gate-Tunable Negative Longitudinal Magnetoresistance in the Predicted Type-II Weyl Semimetal WTe2|Yaojia Wang,Erfu Liu,Huimei Liu,Yiming Pan,Longqiang Zhang,Junwen Zeng,Yajun Fu,Miao Wang,Kang Xu,Zhong Huang,Zhenlin Wang,Haizhou Lu,Dingyu Xing,Baigeng Wang,Xiangang Wan,Feng Miao###
(1595186, 1595187)
 This phenomenon also exhibits strong planarorientation dependence with the absence of negative longitudinal MR along thetungsten chains (a axis), which is consistent with the distinctive feature of atype-II WSM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WS
###Gate-Tunable Negative Longitudinal Magnetoresistance in the Predicted Type-II Weyl Semimetal WTe2|Yaojia Wang,Erfu Liu,Huimei Liu,Yiming Pan,Longqiang Zhang,Junwen Zeng,Yajun Fu,Miao Wang,Kang Xu,Zhong Huang,Zhenlin Wang,Haizhou Lu,Dingyu Xing,Baigeng Wang,Xiangang Wan,Feng Miao###
(1595271, 1595272)
 By applying a gate voltage, we demonstrate that the Fermi energycan be tuned through the Weyl points via the electric field effect; this is thefirst report of controlling the unique transport properties in situ in a WSM<missing VAR>system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

InAs
###Magnetoresistence engineering and singlet/triplet switching in InAs nanowire quantum dots with ferromagnetic sidegates|G. Fábián,P. Makk,M. H. Madsen,J. Nygård,C. Schönenberger,A. Baumgartner###
(1595372, 1595373)
Magnetoresistence engineering and singlet/triplet switching in InAs nanowire quantum dots with ferromagnetic sidegates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 25, '%', 3]

InAs
###Magnetoresistence engineering and singlet/triplet switching in InAs nanowire quantum dots with ferromagnetic sidegates|G. Fábián,P. Makk,M. H. Madsen,J. Nygård,C. Schönenberger,A. Baumgartner###
(1595405, 1595406)
 We present magnetoresistance (MR) experiments on an InAs nanowire quantum dotdevice with two ferromagnetic sidegates (FSGs) in a split-gate geometry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 25, '%', 2]

FS
###Magnetoresistence engineering and singlet/triplet switching in InAs nanowire quantum dots with ferromagnetic sidegates|G. Fábián,P. Makk,M. H. Madsen,J. Nygård,C. Schönenberger,A. Baumgartner###
(1595426, 1595427)
 We present magnetoresistance (MR) experiments on an InAs nanowire quantum dotdevice with two ferromagnetic sidegates (FSGs) in a split-gate geometry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 25, '%', 2]

FS
###Magnetoresistence engineering and singlet/triplet switching in InAs nanowire quantum dots with ferromagnetic sidegates|G. Fábián,P. Makk,M. H. Madsen,J. Nygård,C. Schönenberger,A. Baumgartner###
(1595482, 1595483)
 Thewire segment can be electrically tuned to a single dot or to a double dotregime using the FSGs and a backgate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 25, '%', 1]

In
###Magnetoresistence engineering and singlet/triplet switching in InAs nanowire quantum dots with ferromagnetic sidegates|G. Fábián,P. Makk,M. H. Madsen,J. Nygård,C. Schönenberger,A. Baumgartner###
(1595493, 1595493)
 In both regimes we find a strong MR and asharp MR switching of up to 25% at the field at which the magnetizations ofthe FSGs are inverted by the external field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 25, '%', 0]

FS
###Magnetoresistence engineering and singlet/triplet switching in InAs nanowire quantum dots with ferromagnetic sidegates|G. Fábián,P. Makk,M. H. Madsen,J. Nygård,C. Schönenberger,A. Baumgartner###
(1595550, 1595551)
 In both regimes we find a strong MR and asharp MR switching of up to 25% at the field at which the magnetizations ofthe FSGs are inverted by the external field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 25, '%', 0]

FS
###Magnetoresistence engineering and singlet/triplet switching in InAs nanowire quantum dots with ferromagnetic sidegates|G. Fábián,P. Makk,M. H. Madsen,J. Nygård,C. Schönenberger,A. Baumgartner###
(1595606, 1595607)
 The sign and amplitude of the MRand the MR switching can both be tuned electrically by the FSGs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 25, '%', 1]

In
###Magnetoresistence engineering and singlet/triplet switching in InAs nanowire quantum dots with ferromagnetic sidegates|G. Fábián,P. Makk,M. H. Madsen,J. Nygård,C. Schönenberger,A. Baumgartner###
(1595611, 1595611)
 In a doubledot regime close to pinch-off we find it two sharp transitions in theconductance, reminiscent of tunneling MR (TMR) between two ferromagneticcontacts, with one transition near zero and one at the FSG<missing VAR> switching fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 25, '%', 2]

FS
###Magnetoresistence engineering and singlet/triplet switching in InAs nanowire quantum dots with ferromagnetic sidegates|G. Fábián,P. Makk,M. H. Madsen,J. Nygård,C. Schönenberger,A. Baumgartner###
(1595693, 1595694)
 In a doubledot regime close to pinch-off we find it two sharp transitions in theconductance, reminiscent of tunneling MR (TMR) between two ferromagneticcontacts, with one transition near zero and one at the FSG<missing VAR> switching fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 25, '%', 2]

Bi2
###Epitaxial thin films of pyrochlore iridate Bi_{2+x}Ir_{2-y}O_{7-delta}: structure, defects and transport properties|Wencao Yang,Yuantao Xie,Wenka Zhu,Kyungwha Park,Aiping Chen,Yaroslav Losovyj,Zhen Li,Haoming Liu,Matthew Starr,Jaime A. Acosta,Chenggang Tao,Nan Li,Quanxi Jia,Jean J. Heremans,Shixiong Zhang###
(1595861, 1595862)
Epitaxial thin films of pyrochlore iridate Bi2x<missing VAR>Ir2-yO7-delta structure, defects and transport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ir2-yO7
###Epitaxial thin films of pyrochlore iridate Bi_{2+x}Ir_{2-y}O_{7-delta}: structure, defects and transport properties|Wencao Yang,Yuantao Xie,Wenka Zhu,Kyungwha Park,Aiping Chen,Yaroslav Losovyj,Zhen Li,Haoming Liu,Matthew Starr,Jaime A. Acosta,Chenggang Tao,Nan Li,Quanxi Jia,Jean J. Heremans,Shixiong Zhang###
(1595864, 1595869)
Epitaxial thin films of pyrochlore iridate Bi2x<missing VAR>Ir2-yO7-delta structure, defects and transport properties.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

Bi2Ir2O7
###Epitaxial thin films of pyrochlore iridate Bi_{2+x}Ir_{2-y}O_{7-delta}: structure, defects and transport properties|Wencao Yang,Yuantao Xie,Wenka Zhu,Kyungwha Park,Aiping Chen,Yaroslav Losovyj,Zhen Li,Haoming Liu,Matthew Starr,Jaime A. Acosta,Chenggang Tao,Nan Li,Quanxi Jia,Jean J. Heremans,Shixiong Zhang###
(1595989, 1595994)
 Here wereport on the pulsed laser deposition and characterization of thin films of arepresentative pyrochlore compound Bi2Ir2O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6363636363636364,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BiIr
###Epitaxial thin films of pyrochlore iridate Bi_{2+x}Ir_{2-y}O_{7-delta}: structure, defects and transport properties|Wencao Yang,Yuantao Xie,Wenka Zhu,Kyungwha Park,Aiping Chen,Yaroslav Losovyj,Zhen Li,Haoming Liu,Matthew Starr,Jaime A. Acosta,Chenggang Tao,Nan Li,Quanxi Jia,Jean J. Heremans,Shixiong Zhang###
(1596097, 1596098)
Density-functional-theory calculations indicate the existence of BiIr antisitedefects, qualitatively consistent with the high Bi Ir ratio found in thefilms.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi
###Epitaxial thin films of pyrochlore iridate Bi_{2+x}Ir_{2-y}O_{7-delta}: structure, defects and transport properties|Wencao Yang,Yuantao Xie,Wenka Zhu,Kyungwha Park,Aiping Chen,Yaroslav Losovyj,Zhen Li,Haoming Liu,Matthew Starr,Jaime A. Acosta,Chenggang Tao,Nan Li,Quanxi Jia,Jean J. Heremans,Shixiong Zhang###
(1596116, 1596116)
Density-functional-theory calculations indicate the existence of BiIr antisitedefects, qualitatively consistent with the high Bi Ir ratio found in thefilms.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ir
###Epitaxial thin films of pyrochlore iridate Bi_{2+x}Ir_{2-y}O_{7-delta}: structure, defects and transport properties|Wencao Yang,Yuantao Xie,Wenka Zhu,Kyungwha Park,Aiping Chen,Yaroslav Losovyj,Zhen Li,Haoming Liu,Matthew Starr,Jaime A. Acosta,Chenggang Tao,Nan Li,Quanxi Jia,Jean J. Heremans,Shixiong Zhang###
(1596118, 1596118)
Density-functional-theory calculations indicate the existence of BiIr antisitedefects, qualitatively consistent with the high Bi Ir ratio found in thefilms.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ir
###Epitaxial thin films of pyrochlore iridate Bi_{2+x}Ir_{2-y}O_{7-delta}: structure, defects and transport properties|Wencao Yang,Yuantao Xie,Wenka Zhu,Kyungwha Park,Aiping Chen,Yaroslav Losovyj,Zhen Li,Haoming Liu,Matthew Starr,Jaime A. Acosta,Chenggang Tao,Nan Li,Quanxi Jia,Jean J. Heremans,Shixiong Zhang###
(1596134, 1596134)
 Both Ir and Bi have oxidation states that are lower than their nominalvalues, suggesting the existence of oxygen deficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi
###Epitaxial thin films of pyrochlore iridate Bi_{2+x}Ir_{2-y}O_{7-delta}: structure, defects and transport properties|Wencao Yang,Yuantao Xie,Wenka Zhu,Kyungwha Park,Aiping Chen,Yaroslav Losovyj,Zhen Li,Haoming Liu,Matthew Starr,Jaime A. Acosta,Chenggang Tao,Nan Li,Quanxi Jia,Jean J. Heremans,Shixiong Zhang###
(1596138, 1596138)
 Both Ir and Bi have oxidation states that are lower than their nominalvalues, suggesting the existence of oxygen deficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/MgAl2O4
###Bias voltage effects on tunneling magnetoresistance in Fe/MgAl${}_2$O${}_4$/Fe(001) junctions: Comparative study with Fe/MgO/Fe(001) junctions|Keisuke Masuda,Yoshio Miura###
(1596274, 1596280)
Bias voltage effects on tunneling magnetoresistance in Fe/MgAl2O4/Fe(001) junctions Comparative study with Fe/MgO/Fe(001) junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Fe/MgO
###Bias voltage effects on tunneling magnetoresistance in Fe/MgAl${}_2$O${}_4$/Fe(001) junctions: Comparative study with Fe/MgO/Fe(001) junctions|Keisuke Masuda,Yoshio Miura###
(1596295, 1596298)
Bias voltage effects on tunneling magnetoresistance in Fe/MgAl2O4/Fe(001) junctions Comparative study with Fe/MgO/Fe(001) junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Fe/MgAl2O4
###Bias voltage effects on tunneling magnetoresistance in Fe/MgAl${}_2$O${}_4$/Fe(001) junctions: Comparative study with Fe/MgO/Fe(001) junctions|Keisuke Masuda,Yoshio Miura###
(1596333, 1596339)
 We investigate bias voltage effects on the spin-dependent transportproperties of Fe/MgAl2O4/Fe(001) magnetic tunneling junctions (MTJs)by comparing them with those of Fe/MgO/Fe(001) MTJs.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Fe/MgO
###Bias voltage effects on tunneling magnetoresistance in Fe/MgAl${}_2$O${}_4$/Fe(001) junctions: Comparative study with Fe/MgO/Fe(001) junctions|Keisuke Masuda,Yoshio Miura###
(1596371, 1596374)
 We investigate bias voltage effects on the spin-dependent transportproperties of Fe/MgAl2O4/Fe(001) magnetic tunneling junctions (MTJs)by comparing them with those of Fe/MgO/Fe(001) MTJs.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

V
###Bias voltage effects on tunneling magnetoresistance in Fe/MgAl${}_2$O${}_4$/Fe(001) junctions: Comparative study with Fe/MgO/Fe(001) junctions|Keisuke Masuda,Yoshio Miura###
(1596502, 1596502)
 We find that in both the MTJs, the MR ratio decreases as the bias voltageincreases and finally vanishes at a critical bias voltage Vrm c<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Bias voltage effects on tunneling magnetoresistance in Fe/MgAl${}_2$O${}_4$/Fe(001) junctions: Comparative study with Fe/MgO/Fe(001) junctions|Keisuke Masuda,Yoshio Miura###
(1596525, 1596525)
 We alsofind that the critical bias voltage Vrm c<missing VAR> of the MgAl2O4-basedMTJ is clearly larger than that of the MgO-based MTJ.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgAl2O4
###Bias voltage effects on tunneling magnetoresistance in Fe/MgAl${}_2$O${}_4$/Fe(001) junctions: Comparative study with Fe/MgO/Fe(001) junctions|Keisuke Masuda,Yoshio Miura###
(1596534, 1596538)
 We alsofind that the critical bias voltage Vrm c<missing VAR> of the MgAl2O4-basedMTJ is clearly larger than that of the MgO-based MTJ.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0.14285714285714285,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Bias voltage effects on tunneling magnetoresistance in Fe/MgAl${}_2$O${}_4$/Fe(001) junctions: Comparative study with Fe/MgO/Fe(001) junctions|Keisuke Masuda,Yoshio Miura###
(1596561, 1596562)
 We alsofind that the critical bias voltage Vrm c<missing VAR> of the MgAl2O4-basedMTJ is clearly larger than that of the MgO-based MTJ.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/MgAl2O4
###Bias voltage effects on tunneling magnetoresistance in Fe/MgAl${}_2$O${}_4$/Fe(001) junctions: Comparative study with Fe/MgO/Fe(001) junctions|Keisuke Masuda,Yoshio Miura###
(1596588, 1596594)
 Since the in-planelattice constant of the Fe/MgAl2O4/Fe(001) supercell is twice that ofthe Fe/MgO/Fe(001) one, the Fe electrodes in the MgAl2O4-based MTJshave an identical band structure to that obtained by folding the Fe bandstructure of the MgO-based MTJs in the Brillouin zone of the in-plane wavevector.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Fe/MgO
###Bias voltage effects on tunneling magnetoresistance in Fe/MgAl${}_2$O${}_4$/Fe(001) junctions: Comparative study with Fe/MgO/Fe(001) junctions|Keisuke Masuda,Yoshio Miura###
(1596614, 1596617)
 Since the in-planelattice constant of the Fe/MgAl2O4/Fe(001) supercell is twice that ofthe Fe/MgO/Fe(001) one, the Fe electrodes in the MgAl2O4-based MTJshave an identical band structure to that obtained by folding the Fe bandstructure of the MgO-based MTJs in the Brillouin zone of the in-plane wavevector.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Fe
###Bias voltage effects on tunneling magnetoresistance in Fe/MgAl${}_2$O${}_4$/Fe(001) junctions: Comparative study with Fe/MgO/Fe(001) junctions|Keisuke Masuda,Yoshio Miura###
(1596629, 1596629)
 Since the in-planelattice constant of the Fe/MgAl2O4/Fe(001) supercell is twice that ofthe Fe/MgO/Fe(001) one, the Fe electrodes in the MgAl2O4-based MTJshave an identical band structure to that obtained by folding the Fe bandstructure of the MgO-based MTJs in the Brillouin zone of the in-plane wavevector.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgAl2O4
###Bias voltage effects on tunneling magnetoresistance in Fe/MgAl${}_2$O${}_4$/Fe(001) junctions: Comparative study with Fe/MgO/Fe(001) junctions|Keisuke Masuda,Yoshio Miura###
(1596637, 1596641)
 Since the in-planelattice constant of the Fe/MgAl2O4/Fe(001) supercell is twice that ofthe Fe/MgO/Fe(001) one, the Fe electrodes in the MgAl2O4-based MTJshave an identical band structure to that obtained by folding the Fe bandstructure of the MgO-based MTJs in the Brillouin zone of the in-plane wavevector.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0.14285714285714285,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Bias voltage effects on tunneling magnetoresistance in Fe/MgAl${}_2$O${}_4$/Fe(001) junctions: Comparative study with Fe/MgO/Fe(001) junctions|Keisuke Masuda,Yoshio Miura###
(1596672, 1596672)
 Since the in-planelattice constant of the Fe/MgAl2O4/Fe(001) supercell is twice that ofthe Fe/MgO/Fe(001) one, the Fe electrodes in the MgAl2O4-based MTJshave an identical band structure to that obtained by folding the Fe bandstructure of the MgO-based MTJs in the Brillouin zone of the in-plane wavevector.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Bias voltage effects on tunneling magnetoresistance in Fe/MgAl${}_2$O${}_4$/Fe(001) junctions: Comparative study with Fe/MgO/Fe(001) junctions|Keisuke Masuda,Yoshio Miura###
(1596683, 1596684)
 Since the in-planelattice constant of the Fe/MgAl2O4/Fe(001) supercell is twice that ofthe Fe/MgO/Fe(001) one, the Fe electrodes in the MgAl2O4-based MTJshave an identical band structure to that obtained by folding the Fe bandstructure of the MgO-based MTJs in the Brillouin zone of the in-plane wavevector.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Bias voltage effects on tunneling magnetoresistance in Fe/MgAl${}_2$O${}_4$/Fe(001) junctions: Comparative study with Fe/MgO/Fe(001) junctions|Keisuke Masuda,Yoshio Miura###
(1596730, 1596730)
 We show that such a difference in the Fe band structure is the originof the difference in the critical bias voltage Vrm c<missing VAR> between theMgAl2O4- and MgO-based MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Bias voltage effects on tunneling magnetoresistance in Fe/MgAl${}_2$O${}_4$/Fe(001) junctions: Comparative study with Fe/MgO/Fe(001) junctions|Keisuke Masuda,Yoshio Miura###
(1596759, 1596759)
 We show that such a difference in the Fe band structure is the originof the difference in the critical bias voltage Vrm c<missing VAR> between theMgAl2O4- and MgO-based MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgAl2O4
###Bias voltage effects on tunneling magnetoresistance in Fe/MgAl${}_2$O${}_4$/Fe(001) junctions: Comparative study with Fe/MgO/Fe(001) junctions|Keisuke Masuda,Yoshio Miura###
(1596769, 1596773)
 We show that such a difference in the Fe band structure is the originof the difference in the critical bias voltage Vrm c<missing VAR> between theMgAl2O4- and MgO-based MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0.14285714285714285,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Bias voltage effects on tunneling magnetoresistance in Fe/MgAl${}_2$O${}_4$/Fe(001) junctions: Comparative study with Fe/MgO/Fe(001) junctions|Keisuke Masuda,Yoshio Miura###
(1596778, 1596779)
 We show that such a difference in the Fe band structure is the originof the difference in the critical bias voltage Vrm c<missing VAR> between theMgAl2O4- and MgO-based MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sb2Se2Te
###Large magnetoresistance and Fermi surface study of Sb$_2$Se$_2$Te single crystal|K. Shrestha,V. Marinova,D. Graf,B. Lorenz,C. W. Chu###
(1596810, 1596814)
Large magnetoresistance and Fermi surface study of Sb2Se2Te single crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 1100, '%', 2]

Sb2Se2Te
###Large magnetoresistance and Fermi surface study of Sb$_2$Se$_2$Te single crystal|K. Shrestha,V. Marinova,D. Graf,B. Lorenz,C. W. Chu###
(1596837, 1596841)
 We have studied the magnetotransport properties of a Sb2Se2Te singlecrystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 1100, '%', 1]

B31
###Large magnetoresistance and Fermi surface study of Sb$_2$Se$_2$Te single crystal|K. Shrestha,V. Marinova,D. Graf,B. Lorenz,C. W. Chu###
(1596898, 1596899)
 Magnetoresistance (MR) is maximum when the magnetic field isperpendicular to the sample surface and reaches to a value of 1100% at B31T<missing VAR> with no sign of saturation.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 1100, '%', 0]

H
###Large magnetoresistance and Fermi surface study of Sb$_2$Se$_2$Te single crystal|K. Shrestha,V. Marinova,D. Graf,B. Lorenz,C. W. Chu###
(1596928, 1596928)
 MR shows Shubnikov de Haas (SdH) oscillationsabove B15 T<missing VAR>.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 1100, '%', 1]

B15
###Large magnetoresistance and Fermi surface study of Sb$_2$Se$_2$Te single crystal|K. Shrestha,V. Marinova,D. Graf,B. Lorenz,C. W. Chu###
(1596936, 1596937)
 MR shows Shubnikov de Haas (SdH) oscillationsabove B15 T<missing VAR>.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 1100, '%', 1]

H
###Large magnetoresistance and Fermi surface study of Sb$_2$Se$_2$Te single crystal|K. Shrestha,V. Marinova,D. Graf,B. Lorenz,C. W. Chu###
(1596951, 1596951)
 The frequency spectrum of SdH oscillations consists of threedistinct peaks at alpha32 T<missing VAR>, beta80 T<missing VAR> and gamma117 T<missing VAR> indicating thepresence of three Fermi surface pockets.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 1100, '%', 2]

H
###Large magnetoresistance and Fermi surface study of Sb$_2$Se$_2$Te single crystal|K. Shrestha,V. Marinova,D. Graf,B. Lorenz,C. W. Chu###
(1597033, 1597033)
 Among these frequencies, beta isthe prominent peak in the frequency spectrum of SdH oscillations measured atdifferent tilt angles of the sample with respect to the magnetic field.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 1100, '%', 3]

Sb2Se2Te
###Large magnetoresistance and Fermi surface study of Sb$_2$Se$_2$Te single crystal|K. Shrestha,V. Marinova,D. Graf,B. Lorenz,C. W. Chu###
(1597184, 1597188)
 Large MR of Sb2Se2Te is suitable forutilization in electronic instruments such as a computer hard disc, high fieldmagnetic sensors, and memory devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[291.0, 1100, '%', 6]

II
###Possible topologically non-trivial superconducting order parameter in type-II Weyl semimetal T_d-MoTe_2|Z. Guguchia,F. v. Rohr,Z. Shermadini,A. T. Lee,S. Banerjee,A. R. Wieteska,C. A. Marianetti,H. Luetkens,Z. Gong,B. A. Frandsen,S. C. Cheung,C. Baines,A. Shengelaya,A. N. Pasupathy,E. Morenzoni,S. J. L. Billinge,A. Amato,R. J. Cava,R. Khasanov,Y. J. Uemura###
(1597261, 1597262)
Possible topologically non-trivial superconducting order parameter in type-II Weyl semimetal Td-MoTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[174.0, 1.3, 'GPa', 4]

MoTe2
###Possible topologically non-trivial superconducting order parameter in type-II Weyl semimetal T_d-MoTe_2|Z. Guguchia,F. v. Rohr,Z. Shermadini,A. T. Lee,S. Banerjee,A. R. Wieteska,C. A. Marianetti,H. Luetkens,Z. Gong,B. A. Frandsen,S. C. Cheung,C. Baines,A. Shengelaya,A. N. Pasupathy,E. Morenzoni,S. J. L. Billinge,A. Amato,R. J. Cava,R. Khasanov,Y. J. Uemura###
(1597271, 1597273)
Possible topologically non-trivial superconducting order parameter in type-II Weyl semimetal Td-MoTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 1.3, 'GPa', 4]

MoTe2
###Possible topologically non-trivial superconducting order parameter in type-II Weyl semimetal T_d-MoTe_2|Z. Guguchia,F. v. Rohr,Z. Shermadini,A. T. Lee,S. Banerjee,A. R. Wieteska,C. A. Marianetti,H. Luetkens,Z. Gong,B. A. Frandsen,S. C. Cheung,C. Baines,A. Shengelaya,A. N. Pasupathy,E. Morenzoni,S. J. L. Billinge,A. Amato,R. J. Cava,R. Khasanov,Y. J. Uemura###
(1597276, 1597278)
 MoTe2, with the orthorhombic Td phase, is a new type (type-II) of Weylsemimetal, where the Weyl Fermions emerge at the boundary between electron andhole pockets.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 1.3, 'GPa', 3]

I
###Possible topologically non-trivial superconducting order parameter in type-II Weyl semimetal T_d-MoTe_2|Z. Guguchia,F. v. Rohr,Z. Shermadini,A. T. Lee,S. Banerjee,A. R. Wieteska,C. A. Marianetti,H. Luetkens,Z. Gong,B. A. Frandsen,S. C. Cheung,C. Baines,A. Shengelaya,A. N. Pasupathy,E. Morenzoni,S. J. L. Billinge,A. Amato,R. J. Cava,R. Khasanov,Y. J. Uemura###
(1597305, 1597305)
 MoTe2, with the orthorhombic Td phase, is a new type (type-II) of Weylsemimetal, where the Weyl Fermions emerge at the boundary between electron andhole pockets.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 1.3, 'GPa', 3]

MoTe2
###Possible topologically non-trivial superconducting order parameter in type-II Weyl semimetal T_d-MoTe_2|Z. Guguchia,F. v. Rohr,Z. Shermadini,A. T. Lee,S. Banerjee,A. R. Wieteska,C. A. Marianetti,H. Luetkens,Z. Gong,B. A. Frandsen,S. C. Cheung,C. Baines,A. Shengelaya,A. N. Pasupathy,E. Morenzoni,S. J. L. Billinge,A. Amato,R. J. Cava,R. Khasanov,Y. J. Uemura###
(1597372, 1597374)
 Non-saturating magnetoresistance (MR), and superconductivity werealso observed in Td-MoTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 1.3, 'GPa', 2]

MoTe2
###Possible topologically non-trivial superconducting order parameter in type-II Weyl semimetal T_d-MoTe_2|Z. Guguchia,F. v. Rohr,Z. Shermadini,A. T. Lee,S. Banerjee,A. R. Wieteska,C. A. Marianetti,H. Luetkens,Z. Gong,B. A. Frandsen,S. C. Cheung,C. Baines,A. Shengelaya,A. N. Pasupathy,E. Morenzoni,S. J. L. Billinge,A. Amato,R. J. Cava,R. Khasanov,Y. J. Uemura###
(1597388, 1597390)
 Understanding the superconductivity in Td-MoTe2,which was proposed to be topologically non-trivial, is of eminent interest.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 1.3, 'GPa', 1]

MoTe2
###Possible topologically non-trivial superconducting order parameter in type-II Weyl semimetal T_d-MoTe_2|Z. Guguchia,F. v. Rohr,Z. Shermadini,A. T. Lee,S. Banerjee,A. R. Wieteska,C. A. Marianetti,H. Luetkens,Z. Gong,B. A. Frandsen,S. C. Cheung,C. Baines,A. Shengelaya,A. N. Pasupathy,E. Morenzoni,S. J. L. Billinge,A. Amato,R. J. Cava,R. Khasanov,Y. J. Uemura###
(1597467, 1597469)
Here, we report high-pressure (p<missing VAR>max  1.3 GPa) muon spin rotation experimentson the temperature-dependent magnetic penetration depth in Td-MoTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 1.3, 'GPa', 0]

MoTe2
###Possible topologically non-trivial superconducting order parameter in type-II Weyl semimetal T_d-MoTe_2|Z. Guguchia,F. v. Rohr,Z. Shermadini,A. T. Lee,S. Banerjee,A. R. Wieteska,C. A. Marianetti,H. Luetkens,Z. Gong,B. A. Frandsen,S. C. Cheung,C. Baines,A. Shengelaya,A. N. Pasupathy,E. Morenzoni,S. J. L. Billinge,A. Amato,R. J. Cava,R. Khasanov,Y. J. Uemura###
(1597532, 1597534)
 Moreover, the superconducting orderparameter in Td-MoTe2 is determined to be two gap (ss)-wave symmetric.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 1.3, 'GPa', 2]

SC
###Possible topologically non-trivial superconducting order parameter in type-II Weyl semimetal T_d-MoTe_2|Z. Guguchia,F. v. Rohr,Z. Shermadini,A. T. Lee,S. Banerjee,A. R. Wieteska,C. A. Marianetti,H. Luetkens,Z. Gong,B. A. Frandsen,S. C. Cheung,C. Baines,A. Shengelaya,A. N. Pasupathy,E. Morenzoni,S. J. L. Billinge,A. Amato,R. J. Cava,R. Khasanov,Y. J. Uemura###
(1597577, 1597578)
 Wealso excluded time reversal symmetry breaking in the SC state with sensitivezero-field muSR<missing VAR> experiments.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 1.3, 'GPa', 3]

S
###Possible topologically non-trivial superconducting order parameter in type-II Weyl semimetal T_d-MoTe_2|Z. Guguchia,F. v. Rohr,Z. Shermadini,A. T. Lee,S. Banerjee,A. R. Wieteska,C. A. Marianetti,H. Luetkens,Z. Gong,B. A. Frandsen,S. C. Cheung,C. Baines,A. Shengelaya,A. N. Pasupathy,E. Morenzoni,S. J. L. Billinge,A. Amato,R. J. Cava,R. Khasanov,Y. J. Uemura###
(1597592, 1597592)
 Wealso excluded time reversal symmetry breaking in the SC state with sensitivezero-field muSR<missing VAR> experiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 1.3, 'GPa', 3]

MoTe2
###Possible topologically non-trivial superconducting order parameter in type-II Weyl semimetal T_d-MoTe_2|Z. Guguchia,F. v. Rohr,Z. Shermadini,A. T. Lee,S. Banerjee,A. R. Wieteska,C. A. Marianetti,H. Luetkens,Z. Gong,B. A. Frandsen,S. C. Cheung,C. Baines,A. Shengelaya,A. N. Pasupathy,E. Morenzoni,S. J. L. Billinge,A. Amato,R. J. Cava,R. Khasanov,Y. J. Uemura###
(1597629, 1597631)
 Considering the previous reportciteBalicas1 on the strong suppression of Tc in Td-MoTe2 by disorder, wesuggest that s<missing VAR>- (topological order parameter) state is more likely to berealized in MoTe2 than the s<missing VAR> (trivial) state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[193.0, 1.3, 'GPa', 4]

MoTe2
###Possible topologically non-trivial superconducting order parameter in type-II Weyl semimetal T_d-MoTe_2|Z. Guguchia,F. v. Rohr,Z. Shermadini,A. T. Lee,S. Banerjee,A. R. Wieteska,C. A. Marianetti,H. Luetkens,Z. Gong,B. A. Frandsen,S. C. Cheung,C. Baines,A. Shengelaya,A. N. Pasupathy,E. Morenzoni,S. J. L. Billinge,A. Amato,R. J. Cava,R. Khasanov,Y. J. Uemura###
(1597673, 1597675)
 Considering the previous reportciteBalicas1 on the strong suppression of Tc in Td-MoTe2 by disorder, wesuggest that s<missing VAR>- (topological order parameter) state is more likely to berealized in MoTe2 than the s<missing VAR> (trivial) state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[237.0, 1.3, 'GPa', 4]

SC
###Possible topologically non-trivial superconducting order parameter in type-II Weyl semimetal T_d-MoTe_2|Z. Guguchia,F. v. Rohr,Z. Shermadini,A. T. Lee,S. Banerjee,A. R. Wieteska,C. A. Marianetti,H. Luetkens,Z. Gong,B. A. Frandsen,S. C. Cheung,C. Baines,A. Shengelaya,A. N. Pasupathy,E. Morenzoni,S. J. L. Billinge,A. Amato,R. J. Cava,R. Khasanov,Y. J. Uemura###
(1597699, 1597700)
 Should s<missing VAR>- be the SC gapsymmetry, the Td-MoTe2 is, to our knowledge, the first known example of atime reversal invariant topological (Weyl) superconductor.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[263.0, 1.3, 'GPa', 5]

MoTe2
###Possible topologically non-trivial superconducting order parameter in type-II Weyl semimetal T_d-MoTe_2|Z. Guguchia,F. v. Rohr,Z. Shermadini,A. T. Lee,S. Banerjee,A. R. Wieteska,C. A. Marianetti,H. Luetkens,Z. Gong,B. A. Frandsen,S. C. Cheung,C. Baines,A. Shengelaya,A. N. Pasupathy,E. Morenzoni,S. J. L. Billinge,A. Amato,R. J. Cava,R. Khasanov,Y. J. Uemura###
(1597713, 1597715)
 Should s<missing VAR>- be the SC gapsymmetry, the Td-MoTe2 is, to our knowledge, the first known example of atime reversal invariant topological (Weyl) superconductor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[277.0, 1.3, 'GPa', 5]

SmTiO3/SrTiO3/SmTiO3
###Potential Fluctuations at Low Temperatures in Mesoscopic-Scale SmTiO$_{3}$/SrTiO$_{3}$/SmTiO$_{3}$ Quantum Well Structures|Will J. Hardy,Brandon Isaac,Patrick Marshall,Evgeny Mikheev,Panpan Zhou,Susanne Stemmer,Douglas Natelson###
(1597779, 1597792)
Potential Fluctuations at Low Temperatures in Mesoscopic-Scale SmTiO3/SrTiO3/SmTiO3 Quantum Well Structures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[323.0, 20, 'K', 4]

SrTiO3
###Potential Fluctuations at Low Temperatures in Mesoscopic-Scale SmTiO$_{3}$/SrTiO$_{3}$/SmTiO$_{3}$ Quantum Well Structures|Will J. Hardy,Brandon Isaac,Patrick Marshall,Evgeny Mikheev,Panpan Zhou,Susanne Stemmer,Douglas Natelson###
(1597805, 1597808)
 Heterointerfaces of SrTiO3 with other transition metal oxides make up anintriguing family of systems with a bounty of coexisting and competing physicalorders.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[307.0, 20, 'K', 3]

LaAlO3/SrTiO3
###Potential Fluctuations at Low Temperatures in Mesoscopic-Scale SmTiO$_{3}$/SrTiO$_{3}$/SmTiO$_{3}$ Quantum Well Structures|Will J. Hardy,Brandon Isaac,Patrick Marshall,Evgeny Mikheev,Panpan Zhou,Susanne Stemmer,Douglas Natelson###
(1597864, 1597872)
 Some examples, such as LaAlO3/SrTiO3, support a high carrierdensity electron gas at the interface whose electronic properties aredetermined by a combination of lattice distortions, spin-orbit coupling,defects, and various regimes of magnetic and charge ordering.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[243.0, 20, 'K', 2]

SrTiO3
###Potential Fluctuations at Low Temperatures in Mesoscopic-Scale SmTiO$_{3}$/SrTiO$_{3}$/SmTiO$_{3}$ Quantum Well Structures|Will J. Hardy,Brandon Isaac,Patrick Marshall,Evgeny Mikheev,Panpan Zhou,Susanne Stemmer,Douglas Natelson###
(1597975, 1597978)
 Here, we studyelectronic transport in mesoscale devices made with heterostructures ofSrTiO3 sandwiched between layers of SmTiO3, in which the transportproperties can be tuned from a regime of Fermi-liquid like resistivity (rhosim T<missing VAR>2) to a non-Fermi liquid (rho sim T<missing VAR>5/3) by controlling theSrTiO3 thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 20, 'K', 1]

SmTiO3
###Potential Fluctuations at Low Temperatures in Mesoscopic-Scale SmTiO$_{3}$/SrTiO$_{3}$/SmTiO$_{3}$ Quantum Well Structures|Will J. Hardy,Brandon Isaac,Patrick Marshall,Evgeny Mikheev,Panpan Zhou,Susanne Stemmer,Douglas Natelson###
(1597988, 1597991)
 Here, we studyelectronic transport in mesoscale devices made with heterostructures ofSrTiO3 sandwiched between layers of SmTiO3, in which the transportproperties can be tuned from a regime of Fermi-liquid like resistivity (rhosim T<missing VAR>2) to a non-Fermi liquid (rho sim T<missing VAR>5/3) by controlling theSrTiO3 thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 20, 'K', 1]

SrTiO3
###Potential Fluctuations at Low Temperatures in Mesoscopic-Scale SmTiO$_{3}$/SrTiO$_{3}$/SmTiO$_{3}$ Quantum Well Structures|Will J. Hardy,Brandon Isaac,Patrick Marshall,Evgeny Mikheev,Panpan Zhou,Susanne Stemmer,Douglas Natelson###
(1598065, 1598068)
 Here, we studyelectronic transport in mesoscale devices made with heterostructures ofSrTiO3 sandwiched between layers of SmTiO3, in which the transportproperties can be tuned from a regime of Fermi-liquid like resistivity (rhosim T<missing VAR>2) to a non-Fermi liquid (rho sim T<missing VAR>5/3) by controlling theSrTiO3 thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 20, 'K', 1]

In
###Potential Fluctuations at Low Temperatures in Mesoscopic-Scale SmTiO$_{3}$/SrTiO$_{3}$/SmTiO$_{3}$ Quantum Well Structures|Will J. Hardy,Brandon Isaac,Patrick Marshall,Evgeny Mikheev,Panpan Zhou,Susanne Stemmer,Douglas Natelson###
(1598073, 1598073)
 In mesoscale devices at low temperatures, we findunexpected voltage fluctuations that grow in magnitude as T<missing VAR> is decreasedbelow 20 K, are suppressed with increasing contact electrode size, and areindependent of the drive current and contact spacing distance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 20, 'K', 0]

WO3
###Enhancement of electron mobility at oxide interfaces induced by WO3 overlayers|Giordano Mattoni,David J. Baek,Nicola Manca,Nils Verhagen,Lena F. Kourkoutis,Alessio Filippetti,Andrea D. Caviglia###
(1598342, 1598344)
Enhancement of electron mobility at oxide interfaces induced by WO3 overlayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 2, 'D', 1],[62.0, 2, 'DES', 2],[332.0, 900, '%', 6],[336.0, 10, 'T', 6],[339.0, 1.5, 'K', 6],[366.0, 0, 'cm', 6]

S
###Enhancement of electron mobility at oxide interfaces induced by WO3 overlayers|Giordano Mattoni,David J. Baek,Nicola Manca,Nils Verhagen,Lena F. Kourkoutis,Alessio Filippetti,Andrea D. Caviglia###
(1598377, 1598377)
 Interfaces between complex oxides constitute a unique playground for 2Delectron systems (2DES), where superconductivity and magnetism can arise fromcombinations of bulk insulators.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 2, 'D', 0],[29.0, 2, 'DES', 1],[299.0, 900, '%', 5],[303.0, 10, 'T', 5],[306.0, 1.5, 'K', 5],[333.0, 0, 'cm', 5]

LaAlO3/SrTiO3
###Enhancement of electron mobility at oxide interfaces induced by WO3 overlayers|Giordano Mattoni,David J. Baek,Nicola Manca,Nils Verhagen,Lena F. Kourkoutis,Alessio Filippetti,Andrea D. Caviglia###
(1598412, 1598420)
 The 2DES at the LaAlO3/SrTiO3 interface is oneof the most studied in this regard, and its origin is determined by both thepresence of a polar field in LaAlO3 and the insurgence of point defects, suchas oxygen vacancies and intermixed cations.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[46.0, 2, 'D', 1],[6.0, 2, 'DES', 0],[256.0, 900, '%', 4],[260.0, 10, 'T', 4],[263.0, 1.5, 'K', 4],[290.0, 0, 'cm', 4]

LaAlO3
###Enhancement of electron mobility at oxide interfaces induced by WO3 overlayers|Giordano Mattoni,David J. Baek,Nicola Manca,Nils Verhagen,Lena F. Kourkoutis,Alessio Filippetti,Andrea D. Caviglia###
(1598473, 1598476)
 The 2DES at the LaAlO3/SrTiO3 interface is oneof the most studied in this regard, and its origin is determined by both thepresence of a polar field in LaAlO3 and the insurgence of point defects, suchas oxygen vacancies and intermixed cations.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 2, 'D', 1],[67.0, 2, 'DES', 0],[200.0, 900, '%', 4],[204.0, 10, 'T', 4],[207.0, 1.5, 'K', 4],[234.0, 0, 'cm', 4]

In
###Enhancement of electron mobility at oxide interfaces induced by WO3 overlayers|Giordano Mattoni,David J. Baek,Nicola Manca,Nils Verhagen,Lena F. Kourkoutis,Alessio Filippetti,Andrea D. Caviglia###
(1598541, 1598541)
 Inthis work we use an amorphous WO3 overlayer to control the defect formation andobtain an increased electron mobility and effective mass in WO3/LaAlO3/SrTiO3heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 2, 'D', 3],[135.0, 2, 'DES', 2],[135.0, 900, '%', 2],[139.0, 10, 'T', 2],[142.0, 1.5, 'K', 2],[169.0, 0, 'cm', 2]

WO3
###Enhancement of electron mobility at oxide interfaces induced by WO3 overlayers|Giordano Mattoni,David J. Baek,Nicola Manca,Nils Verhagen,Lena F. Kourkoutis,Alessio Filippetti,Andrea D. Caviglia###
(1598556, 1598558)
 Inthis work we use an amorphous WO3 overlayer to control the defect formation andobtain an increased electron mobility and effective mass in WO3/LaAlO3/SrTiO3heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[190.0, 2, 'D', 3],[150.0, 2, 'DES', 2],[118.0, 900, '%', 2],[122.0, 10, 'T', 2],[125.0, 1.5, 'K', 2],[152.0, 0, 'cm', 2]

WO3/LaAlO3/SrTiO3
###Enhancement of electron mobility at oxide interfaces induced by WO3 overlayers|Giordano Mattoni,David J. Baek,Nicola Manca,Nils Verhagen,Lena F. Kourkoutis,Alessio Filippetti,Andrea D. Caviglia###
(1598593, 1598605)
 Inthis work we use an amorphous WO3 overlayer to control the defect formation andobtain an increased electron mobility and effective mass in WO3/LaAlO3/SrTiO3heterostructures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[227.0, 2, 'D', 3],[187.0, 2, 'DES', 2],[71.0, 900, '%', 2],[75.0, 10, 'T', 2],[78.0, 1.5, 'K', 2],[105.0, 0, 'cm', 2]

LaAlO3
###Enhancement of electron mobility at oxide interfaces induced by WO3 overlayers|Giordano Mattoni,David J. Baek,Nicola Manca,Nils Verhagen,Lena F. Kourkoutis,Alessio Filippetti,Andrea D. Caviglia###
(1598642, 1598645)
 The studied system shows a sharp insulator-to-metaltransition as a function of both LaAlO3 and WO3 layer thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[276.0, 2, 'D', 4],[236.0, 2, 'DES', 3],[31.0, 900, '%', 1],[35.0, 10, 'T', 1],[38.0, 1.5, 'K', 1],[65.0, 0, 'cm', 1]

WO3
###Enhancement of electron mobility at oxide interfaces induced by WO3 overlayers|Giordano Mattoni,David J. Baek,Nicola Manca,Nils Verhagen,Lena F. Kourkoutis,Alessio Filippetti,Andrea D. Caviglia###
(1598649, 1598651)
 The studied system shows a sharp insulator-to-metaltransition as a function of both LaAlO3 and WO3 layer thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[283.0, 2, 'D', 4],[243.0, 2, 'DES', 3],[25.0, 900, '%', 1],[29.0, 10, 'T', 1],[32.0, 1.5, 'K', 1],[59.0, 0, 'cm', 1]

WO3
###Enhancement of electron mobility at oxide interfaces induced by WO3 overlayers|Giordano Mattoni,David J. Baek,Nicola Manca,Nils Verhagen,Lena F. Kourkoutis,Alessio Filippetti,Andrea D. Caviglia###
(1598745, 1598747)
 The amorphous character of the WO3 overlayer makes this a versatileapproach for defect control at oxide interfaces, which could be applied toother heterestrostures disregarding the constraints imposed by crystalsymmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[379.0, 2, 'D', 6],[339.0, 2, 'DES', 5],[69.0, 900, '%', 1],[65.0, 10, 'T', 1],[62.0, 1.5, 'K', 1],[35.0, 0, 'cm', 1]

OK
###Geometrical dependence of domain wall propagation and nucleation fields in magnetic domain wall sensor devices|B. Borie,A. Kehlberger,J. Wahrhusen,H. Grimm,M. Kläui###
(1598944, 1598945)
 The two reasons for devicefailure, namely the distribution of domain wall propagation field (depinning)and the nucleation field are determined with Magneto-Optical Kerr Effect (M<missing VAR>OKE)and Giant Magnetoresistance (GMR) measurements for thousands of elements toobtain significant statistics.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni81Fe19
###Geometrical dependence of domain wall propagation and nucleation fields in magnetic domain wall sensor devices|B. Borie,A. Kehlberger,J. Wahrhusen,H. Grimm,M. Kläui###
(1598988, 1598991)
 Single layers of Ni81Fe19, a completeGMR stack with Co90Fe10/Ni81Fe19 as a free layer and asingle layer of Co90Fe10 are deposited and industrially patterned todetermine the influence of the shape anisotropy, the magnetocrystallineanisotropy and the fabrication processes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.19,0,0.81,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co90Fe10/Ni81Fe19
###Geometrical dependence of domain wall propagation and nucleation fields in magnetic domain wall sensor devices|B. Borie,A. Kehlberger,J. Wahrhusen,H. Grimm,M. Kläui###
(1599007, 1599015)
 Single layers of Ni81Fe19, a completeGMR stack with Co90Fe10/Ni81Fe19 as a free layer and asingle layer of Co90Fe10 are deposited and industrially patterned todetermine the influence of the shape anisotropy, the magnetocrystallineanisotropy and the fabrication processes.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Co90Fe10
###Geometrical dependence of domain wall propagation and nucleation fields in magnetic domain wall sensor devices|B. Borie,A. Kehlberger,J. Wahrhusen,H. Grimm,M. Kläui###
(1599036, 1599039)
 Single layers of Ni81Fe19, a completeGMR stack with Co90Fe10/Ni81Fe19 as a free layer and asingle layer of Co90Fe10 are deposited and industrially patterned todetermine the influence of the shape anisotropy, the magnetocrystallineanisotropy and the fabrication processes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0.9,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NdTiO3/SrTiO3
###Ferromagnetism and spin-dependent transport at a complex oxide interface|Yilikal Ayino,Peng Xu,Juan Tigre-Lazo,Jin Yue,Bharat Jalan,Vlad S. Pribiag###
(1599422, 1599430)
 Here we investigate for the first time themagnetic properties of semi-insulating NdTiO3/SrTiO3 (NT<missing VAR>O/ST<missing VAR>O) interfacesand present the first milli-Kelvin study of NT<missing VAR>O/ST<missing VAR>O.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

N
###Ferromagnetism and spin-dependent transport at a complex oxide interface|Yilikal Ayino,Peng Xu,Juan Tigre-Lazo,Jin Yue,Bharat Jalan,Vlad S. Pribiag###
(1599433, 1599433)
 Here we investigate for the first time themagnetic properties of semi-insulating NdTiO3/SrTiO3 (NT<missing VAR>O/ST<missing VAR>O) interfacesand present the first milli-Kelvin study of NT<missing VAR>O/ST<missing VAR>O.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O/S
###Ferromagnetism and spin-dependent transport at a complex oxide interface|Yilikal Ayino,Peng Xu,Juan Tigre-Lazo,Jin Yue,Bharat Jalan,Vlad S. Pribiag###
(1599435, 1599437)
 Here we investigate for the first time themagnetic properties of semi-insulating NdTiO3/SrTiO3 (NT<missing VAR>O/ST<missing VAR>O) interfacesand present the first milli-Kelvin study of NT<missing VAR>O/ST<missing VAR>O.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

O
###Ferromagnetism and spin-dependent transport at a complex oxide interface|Yilikal Ayino,Peng Xu,Juan Tigre-Lazo,Jin Yue,Bharat Jalan,Vlad S. Pribiag###
(1599439, 1599439)
 Here we investigate for the first time themagnetic properties of semi-insulating NdTiO3/SrTiO3 (NT<missing VAR>O/ST<missing VAR>O) interfacesand present the first milli-Kelvin study of NT<missing VAR>O/ST<missing VAR>O.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Ferromagnetism and spin-dependent transport at a complex oxide interface|Yilikal Ayino,Peng Xu,Juan Tigre-Lazo,Jin Yue,Bharat Jalan,Vlad S. Pribiag###
(1599461, 1599461)
 Here we investigate for the first time themagnetic properties of semi-insulating NdTiO3/SrTiO3 (NT<missing VAR>O/ST<missing VAR>O) interfacesand present the first milli-Kelvin study of NT<missing VAR>O/ST<missing VAR>O.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O/S
###Ferromagnetism and spin-dependent transport at a complex oxide interface|Yilikal Ayino,Peng Xu,Juan Tigre-Lazo,Jin Yue,Bharat Jalan,Vlad S. Pribiag###
(1599463, 1599465)
 Here we investigate for the first time themagnetic properties of semi-insulating NdTiO3/SrTiO3 (NT<missing VAR>O/ST<missing VAR>O) interfacesand present the first milli-Kelvin study of NT<missing VAR>O/ST<missing VAR>O.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

O
###Ferromagnetism and spin-dependent transport at a complex oxide interface|Yilikal Ayino,Peng Xu,Juan Tigre-Lazo,Jin Yue,Bharat Jalan,Vlad S. Pribiag###
(1599467, 1599467)
 Here we investigate for the first time themagnetic properties of semi-insulating NdTiO3/SrTiO3 (NT<missing VAR>O/ST<missing VAR>O) interfacesand present the first milli-Kelvin study of NT<missing VAR>O/ST<missing VAR>O.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Ferromagnetism and spin-dependent transport at a complex oxide interface|Yilikal Ayino,Peng Xu,Juan Tigre-Lazo,Jin Yue,Bharat Jalan,Vlad S. Pribiag###
(1599546, 1599546)
 In addition, the MR also shows transient hysteretic features ona timescale of 10-100 seconds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Ferromagnetism and spin-dependent transport at a complex oxide interface|Yilikal Ayino,Peng Xu,Juan Tigre-Lazo,Jin Yue,Bharat Jalan,Vlad S. Pribiag###
(1599631, 1599631)
 We demonstrate that these are consistent withan extrinsic magneto-thermal origin, which may have been misinterpreted inprevious reports of magnetism in ST<missing VAR>O-based oxide interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Ferromagnetism and spin-dependent transport at a complex oxide interface|Yilikal Ayino,Peng Xu,Juan Tigre-Lazo,Jin Yue,Bharat Jalan,Vlad S. Pribiag###
(1599633, 1599633)
 We demonstrate that these are consistent withan extrinsic magneto-thermal origin, which may have been misinterpreted inprevious reports of magnetism in ST<missing VAR>O-based oxide interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Anomalous magnetotransport properties of high-quality single crystals of Weyl semimetal WTe2: Sign change of Hall resistivity|Rajveer Jha,Ryuji Higashinaka,Tatsuma D. Matsuda,Raquel A. Ribeiro,Yuji Aoki###
(1599745, 1599747)
Anomalous magnetotransport properties of high-quality single crystals of Weyl semimetal WTe2 Sign change of Hall resistivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 1330, 'and', 2],[102.0, 9, 'T', 2],[105.0, 2, 'K', 2],[231.0, 1, '%', 4],[235.0, 2, 'K', 4],[304.0, 3, 'K', 6]

II
###Anomalous magnetotransport properties of high-quality single crystals of Weyl semimetal WTe2: Sign change of Hall resistivity|Rajveer Jha,Ryuji Higashinaka,Tatsuma D. Matsuda,Raquel A. Ribeiro,Yuji Aoki###
(1599793, 1599794)
 We report on a systematic study of Hall effect using high quality singlecrystals of type-II Weyl semimetal WTe2 with the applied magnetic field B//c<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 1330, 'and', 1],[55.0, 9, 'T', 1],[58.0, 2, 'K', 1],[184.0, 1, '%', 3],[188.0, 2, 'K', 3],[257.0, 3, 'K', 5]

WTe2
###Anomalous magnetotransport properties of high-quality single crystals of Weyl semimetal WTe2: Sign change of Hall resistivity|Rajveer Jha,Ryuji Higashinaka,Tatsuma D. Matsuda,Raquel A. Ribeiro,Yuji Aoki###
(1599800, 1599802)
 We report on a systematic study of Hall effect using high quality singlecrystals of type-II Weyl semimetal WTe2 with the applied magnetic field B//c<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 1330, 'and', 1],[47.0, 9, 'T', 1],[50.0, 2, 'K', 1],[176.0, 1, '%', 3],[180.0, 2, 'K', 3],[249.0, 3, 'K', 5]

B
###Anomalous magnetotransport properties of high-quality single crystals of Weyl semimetal WTe2: Sign change of Hall resistivity|Rajveer Jha,Ryuji Higashinaka,Tatsuma D. Matsuda,Raquel A. Ribeiro,Yuji Aoki###
(1599814, 1599814)
 We report on a systematic study of Hall effect using high quality singlecrystals of type-II Weyl semimetal WTe2 with the applied magnetic field B//c<missing VAR>.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 1330, 'and', 1],[35.0, 9, 'T', 1],[38.0, 2, 'K', 1],[164.0, 1, '%', 3],[168.0, 2, 'K', 3],[237.0, 3, 'K', 5]

K
###Anomalous magnetotransport properties of high-quality single crystals of Weyl semimetal WTe2: Sign change of Hall resistivity|Rajveer Jha,Ryuji Higashinaka,Tatsuma D. Matsuda,Raquel A. Ribeiro,Yuji Aoki###
(1600024, 1600024)
 The negative Hall resistivitygrowing rapidly below 20 K is due to a rapidly increasing muh<missing VAR>/mue<missing VAR>approaching one.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[194.0, 1330, 'and', 3],[175.0, 9, 'T', 3],[172.0, 2, 'K', 3],[46.0, 1, '%', 1],[42.0, 2, 'K', 1],[27.0, 3, 'K', 1]

F
###Temperature- dependence of anomalous Hall conductivity in Rashba-type ferromagnets|Akimasa Sakuma###
(1600257, 1600257)
 The applicability and usefulness of Rashba model have been extended by recentobservations in the field of spintronics, such as the spin-orbit torque at thejunction interfaces between ferromagnetic (FM) metals and non-magnetic (NM)metals and the perpendicular anomalous magnetoresistance (AMR) inheterostructures such as FI/NM<missing VAR> or FM<missing VAR>/NI (I denotes an insulator).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Temperature- dependence of anomalous Hall conductivity in Rashba-type ferromagnets|Akimasa Sakuma###
(1600270, 1600270)
 The applicability and usefulness of Rashba model have been extended by recentobservations in the field of spintronics, such as the spin-orbit torque at thejunction interfaces between ferromagnetic (FM) metals and non-magnetic (NM)metals and the perpendicular anomalous magnetoresistance (AMR) inheterostructures such as FI/NM<missing VAR> or FM<missing VAR>/NI (I denotes an insulator).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FI/N
###Temperature- dependence of anomalous Hall conductivity in Rashba-type ferromagnets|Akimasa Sakuma###
(1600302, 1600305)
 The applicability and usefulness of Rashba model have been extended by recentobservations in the field of spintronics, such as the spin-orbit torque at thejunction interfaces between ferromagnetic (FM) metals and non-magnetic (NM)metals and the perpendicular anomalous magnetoresistance (AMR) inheterostructures such as FI/NM<missing VAR> or FM<missing VAR>/NI (I denotes an insulator).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

F
###Temperature- dependence of anomalous Hall conductivity in Rashba-type ferromagnets|Akimasa Sakuma###
(1600310, 1600310)
 The applicability and usefulness of Rashba model have been extended by recentobservations in the field of spintronics, such as the spin-orbit torque at thejunction interfaces between ferromagnetic (FM) metals and non-magnetic (NM)metals and the perpendicular anomalous magnetoresistance (AMR) inheterostructures such as FI/NM<missing VAR> or FM<missing VAR>/NI (I denotes an insulator).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NI
###Temperature- dependence of anomalous Hall conductivity in Rashba-type ferromagnets|Akimasa Sakuma###
(1600313, 1600314)
 The applicability and usefulness of Rashba model have been extended by recentobservations in the field of spintronics, such as the spin-orbit torque at thejunction interfaces between ferromagnetic (FM) metals and non-magnetic (NM)metals and the perpendicular anomalous magnetoresistance (AMR) inheterostructures such as FI/NM<missing VAR> or FM<missing VAR>/NI (I denotes an insulator).
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Temperature- dependence of anomalous Hall conductivity in Rashba-type ferromagnets|Akimasa Sakuma###
(1600317, 1600317)
 The applicability and usefulness of Rashba model have been extended by recentobservations in the field of spintronics, such as the spin-orbit torque at thejunction interfaces between ferromagnetic (FM) metals and non-magnetic (NM)metals and the perpendicular anomalous magnetoresistance (AMR) inheterostructures such as FI/NM<missing VAR> or FM<missing VAR>/NI (I denotes an insulator).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Temperature- dependence of anomalous Hall conductivity in Rashba-type ferromagnets|Akimasa Sakuma###
(1600327, 1600327)
 Inparticular, the observations of the perpendicular AMR effect stimulate furtherinterest in the Rashba-type spin-orbit interaction (SOI) at interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(SOI)
###Temperature- dependence of anomalous Hall conductivity in Rashba-type ferromagnets|Akimasa Sakuma###
(1600370, 1600374)
 Inparticular, the observations of the perpendicular AMR effect stimulate furtherinterest in the Rashba-type spin-orbit interaction (SOI) at interfaces.
Featurization successful!
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Temperature- dependence of anomalous Hall conductivity in Rashba-type ferromagnets|Akimasa Sakuma###
(1600400, 1600400)
 Thus,the Rashba model with exchange splitting (EXS) is considered not only to playas an effective model for the physical understanding but also to reflect actualbi-layer systems in current spintronics devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Temperature- dependence of anomalous Hall conductivity in Rashba-type ferromagnets|Akimasa Sakuma###
(1600458, 1600458)
 In the present work, we havefirst investigated the temperature dependence of anomalous Hall conductivity(AHC) of Rashba-type ferromagnets considered effects of spin fluctuationswithin the disordered local moment (DLM) scheme.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Temperature- dependence of anomalous Hall conductivity in Rashba-type ferromagnets|Akimasa Sakuma###
(1600494, 1600494)
 In the present work, we havefirst investigated the temperature dependence of anomalous Hall conductivity(AHC) of Rashba-type ferromagnets considered effects of spin fluctuationswithin the disordered local moment (DLM) scheme.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HC
###Temperature- dependence of anomalous Hall conductivity in Rashba-type ferromagnets|Akimasa Sakuma###
(1600557, 1600558)
 The most distinctive featurethat we observed is that intrinsic AHC increases with increasing temperature.
Featurization terminated normally.
0.5,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HC
###Temperature- dependence of anomalous Hall conductivity in Rashba-type ferromagnets|Akimasa Sakuma###
(1600601, 1600602)
This can be understood from the aspect of spin chirality, which indicates thatthe AHC increases with decreasing EXS when the SOI is much smaller than theEXS.
Featurization terminated normally.
0.5,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Temperature- dependence of anomalous Hall conductivity in Rashba-type ferromagnets|Akimasa Sakuma###
(1600612, 1600612)
This can be understood from the aspect of spin chirality, which indicates thatthe AHC increases with decreasing EXS when the SOI is much smaller than theEXS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SOI
###Temperature- dependence of anomalous Hall conductivity in Rashba-type ferromagnets|Akimasa Sakuma###
(1600618, 1600620)
This can be understood from the aspect of spin chirality, which indicates thatthe AHC increases with decreasing EXS when the SOI is much smaller than theEXS.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Temperature- dependence of anomalous Hall conductivity in Rashba-type ferromagnets|Akimasa Sakuma###
(1600635, 1600635)
This can be understood from the aspect of spin chirality, which indicates thatthe AHC increases with decreasing EXS when the SOI is much smaller than theEXS.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cd3As2
###Probing the Chiral Anomaly by Planar Hall Effect in Three-dimensional Dirac Semimetal Cd3As2 Nanoplates|Min Wu,Guolin Zheng,Weiwei Chu,Wenshuai Gao,Hongwei Zhang,Jianwei Lu,Yuyan Han,Jiyong Yang,Haifeng Du,Wei Ning,Yuheng Zhang,Mingliang Tian###
(1600793, 1600796)
Probing the Chiral Anomaly by Planar Hall Effect in Three-dimensional Dirac Semimetal Cd3As2 Nanoplates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WS
###Probing the Chiral Anomaly by Planar Hall Effect in Three-dimensional Dirac Semimetal Cd3As2 Nanoplates|Min Wu,Guolin Zheng,Weiwei Chu,Wenshuai Gao,Hongwei Zhang,Jianwei Lu,Yuyan Han,Jiyong Yang,Haifeng Du,Wei Ning,Yuheng Zhang,Mingliang Tian###
(1600865, 1600866)
 One of the most fascinating achievements is the chiralanomaly in recently discovered Weyl semimetals (WSMs), which is manifested as anegative longitudinal magnetoresistance (LMR) in the presence of a magneticfield B parallel to an electric field E<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Probing the Chiral Anomaly by Planar Hall Effect in Three-dimensional Dirac Semimetal Cd3As2 Nanoplates|Min Wu,Guolin Zheng,Weiwei Chu,Wenshuai Gao,Hongwei Zhang,Jianwei Lu,Yuyan Han,Jiyong Yang,Haifeng Du,Wei Ning,Yuheng Zhang,Mingliang Tian###
(1600909, 1600909)
 One of the most fascinating achievements is the chiralanomaly in recently discovered Weyl semimetals (WSMs), which is manifested as anegative longitudinal magnetoresistance (LMR) in the presence of a magneticfield B parallel to an electric field E<missing VAR>.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PH
###Probing the Chiral Anomaly by Planar Hall Effect in Three-dimensional Dirac Semimetal Cd3As2 Nanoplates|Min Wu,Guolin Zheng,Weiwei Chu,Wenshuai Gao,Hongwei Zhang,Jianwei Lu,Yuyan Han,Jiyong Yang,Haifeng Du,Wei Ning,Yuheng Zhang,Mingliang Tian###
(1600956, 1600957)
 Another predicted key effect closelyrelated to the chiral anomaly is the planar Hall effect (PHE), which has notbeen identified in WSMs so far.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WS
###Probing the Chiral Anomaly by Planar Hall Effect in Three-dimensional Dirac Semimetal Cd3As2 Nanoplates|Min Wu,Guolin Zheng,Weiwei Chu,Wenshuai Gao,Hongwei Zhang,Jianwei Lu,Yuyan Han,Jiyong Yang,Haifeng Du,Wei Ning,Yuheng Zhang,Mingliang Tian###
(1600975, 1600976)
 Another predicted key effect closelyrelated to the chiral anomaly is the planar Hall effect (PHE), which has notbeen identified in WSMs so far.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cd3As2
###Probing the Chiral Anomaly by Planar Hall Effect in Three-dimensional Dirac Semimetal Cd3As2 Nanoplates|Min Wu,Guolin Zheng,Weiwei Chu,Wenshuai Gao,Hongwei Zhang,Jianwei Lu,Yuyan Han,Jiyong Yang,Haifeng Du,Wei Ning,Yuheng Zhang,Mingliang Tian###
(1601003, 1601006)
 Here we carried out the planar Hallmeasurements on Cd3As2 nanoplates, and found that, accompanied by the largenegative LMR, a PHE<missing VAR> with non-zero transverse voltage can be developed whiletilting the in-plane magnetic field B away from the electric field E<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PH
###Probing the Chiral Anomaly by Planar Hall Effect in Three-dimensional Dirac Semimetal Cd3As2 Nanoplates|Min Wu,Guolin Zheng,Weiwei Chu,Wenshuai Gao,Hongwei Zhang,Jianwei Lu,Yuyan Han,Jiyong Yang,Haifeng Du,Wei Ning,Yuheng Zhang,Mingliang Tian###
(1601036, 1601037)
 Here we carried out the planar Hallmeasurements on Cd3As2 nanoplates, and found that, accompanied by the largenegative LMR, a PHE<missing VAR> with non-zero transverse voltage can be developed whiletilting the in-plane magnetic field B away from the electric field E<missing VAR>.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Probing the Chiral Anomaly by Planar Hall Effect in Three-dimensional Dirac Semimetal Cd3As2 Nanoplates|Min Wu,Guolin Zheng,Weiwei Chu,Wenshuai Gao,Hongwei Zhang,Jianwei Lu,Yuyan Han,Jiyong Yang,Haifeng Du,Wei Ning,Yuheng Zhang,Mingliang Tian###
(1601071, 1601071)
 Here we carried out the planar Hallmeasurements on Cd3As2 nanoplates, and found that, accompanied by the largenegative LMR, a PHE<missing VAR> with non-zero transverse voltage can be developed whiletilting the in-plane magnetic field B away from the electric field E<missing VAR>.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PH
###Probing the Chiral Anomaly by Planar Hall Effect in Three-dimensional Dirac Semimetal Cd3As2 Nanoplates|Min Wu,Guolin Zheng,Weiwei Chu,Wenshuai Gao,Hongwei Zhang,Jianwei Lu,Yuyan Han,Jiyong Yang,Haifeng Du,Wei Ning,Yuheng Zhang,Mingliang Tian###
(1601099, 1601100)
 Furtherexperiments reveal that both the PHE<missing VAR> and the negative LMR can be suppressedsynchronously by increasing the temperature, but still visible at roomtemperature, indicating the same origin of these two effects.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PH
###Probing the Chiral Anomaly by Planar Hall Effect in Three-dimensional Dirac Semimetal Cd3As2 Nanoplates|Min Wu,Guolin Zheng,Weiwei Chu,Wenshuai Gao,Hongwei Zhang,Jianwei Lu,Yuyan Han,Jiyong Yang,Haifeng Du,Wei Ning,Yuheng Zhang,Mingliang Tian###
(1601169, 1601170)
 The observationof PHE<missing VAR> in Cd3As2 nanoplates gives another transport evidence for the chiralanomaly and provides a deep insight into the chiral charge pumping in WeylFermions system.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cd3As2
###Probing the Chiral Anomaly by Planar Hall Effect in Three-dimensional Dirac Semimetal Cd3As2 Nanoplates|Min Wu,Guolin Zheng,Weiwei Chu,Wenshuai Gao,Hongwei Zhang,Jianwei Lu,Yuyan Han,Jiyong Yang,Haifeng Du,Wei Ning,Yuheng Zhang,Mingliang Tian###
(1601175, 1601178)
 The observationof PHE<missing VAR> in Cd3As2 nanoplates gives another transport evidence for the chiralanomaly and provides a deep insight into the chiral charge pumping in WeylFermions system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoTe2
###Elastic and electronic tuning of magnetoresistance in MoTe$_2$|Junjie Yang,Jonathan Colen,Jun Liu,Manh Cuong Nguyen,Gia-Wei Chern,Despina Louca###
(1601251, 1601253)
Elastic and electronic tuning of magnetoresistance in MoTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[236.0, 1, 'T', 4],[265.0, 1, 'T', 5]

MoTe2
###Elastic and electronic tuning of magnetoresistance in MoTe$_2$|Junjie Yang,Jonathan Colen,Jun Liu,Manh Cuong Nguyen,Gia-Wei Chern,Despina Louca###
(1601331, 1601333)
 We report on howthe anomalously large magnetoresistance (MR) observed under high magnetic fieldin MoTe2, a type II Weyl semimetal, can be reversibly controlled undertensile strain.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 1, 'T', 2],[185.0, 1, 'T', 3]

II
###Elastic and electronic tuning of magnetoresistance in MoTe$_2$|Junjie Yang,Jonathan Colen,Jun Liu,Manh Cuong Nguyen,Gia-Wei Chern,Despina Louca###
(1601340, 1601341)
 We report on howthe anomalously large magnetoresistance (MR) observed under high magnetic fieldin MoTe2, a type II Weyl semimetal, can be reversibly controlled undertensile strain.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 1, 'T', 2],[177.0, 1, 'T', 3]

CaFeAsF
###Fermi surface with Dirac fermions in CaFeAsF determined via quantum oscillation measurements|Taichi Terashima,Hishiro T. Hirose,David Graf,Yonghui Ma,Gang Mu,Tao Hu,Katsuhiro Suzuki,Shinya Uji,Hiroaki Ikeda###
(1601666, 1601669)
Fermi surface with Dirac fermions in CaFeAsF determined via quantum oscillation measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 1111, 'iron', 2],[361.0, 30, 'T', 7],[439.0, 118, 'K', 8]

In
###Fermi surface with Dirac fermions in CaFeAsF determined via quantum oscillation measurements|Taichi Terashima,Hishiro T. Hirose,David Graf,Yonghui Ma,Gang Mu,Tao Hu,Katsuhiro Suzuki,Shinya Uji,Hiroaki Ikeda###
(1601754, 1601754)
 In thisstudy, we completely determine the Fermi surface in the antiferromagnetic stateof CaFeAsF, a 1111 iron-arsenide parent compound, by performing quantumoscillation measurements and band-structure calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 1111, 'iron', 0],[276.0, 30, 'T', 5],[354.0, 118, 'K', 6]

CaFeAsF
###Fermi surface with Dirac fermions in CaFeAsF determined via quantum oscillation measurements|Taichi Terashima,Hishiro T. Hirose,David Graf,Yonghui Ma,Gang Mu,Tao Hu,Katsuhiro Suzuki,Shinya Uji,Hiroaki Ikeda###
(1601785, 1601788)
 In thisstudy, we completely determine the Fermi surface in the antiferromagnetic stateof CaFeAsF, a 1111 iron-arsenide parent compound, by performing quantumoscillation measurements and band-structure calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 1111, 'iron', 0],[242.0, 30, 'T', 5],[320.0, 118, 'K', 6]

Fe
###Fermi surface with Dirac fermions in CaFeAsF determined via quantum oscillation measurements|Taichi Terashima,Hishiro T. Hirose,David Graf,Yonghui Ma,Gang Mu,Tao Hu,Katsuhiro Suzuki,Shinya Uji,Hiroaki Ikeda###
(1601924, 1601924)
The carrier density is of the order of 10-3 per Fe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 1111, 'iron', 3],[106.0, 30, 'T', 2],[184.0, 118, 'K', 3]

B
###Fermi surface with Dirac fermions in CaFeAsF determined via quantum oscillation measurements|Taichi Terashima,Hishiro T. Hirose,David Graf,Yonghui Ma,Gang Mu,Tao Hu,Katsuhiro Suzuki,Shinya Uji,Hiroaki Ikeda###
(1602012, 1602012)
 We also report a nearlylinear-in-B magnetoresistance and an anomalous resistivity increase aboveabout 30 T for B parallel c<missing VAR>, the latter of which is likely related to thequantum limit of the electron orbit.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[220.0, 1111, 'iron', 5],[18.0, 30, 'T', 0],[96.0, 118, 'K', 1]

B
###Fermi surface with Dirac fermions in CaFeAsF determined via quantum oscillation measurements|Taichi Terashima,Hishiro T. Hirose,David Graf,Yonghui Ma,Gang Mu,Tao Hu,Katsuhiro Suzuki,Shinya Uji,Hiroaki Ikeda###
(1602034, 1602034)
 We also report a nearlylinear-in-B magnetoresistance and an anomalous resistivity increase aboveabout 30 T for B parallel c<missing VAR>, the latter of which is likely related to thequantum limit of the electron orbit.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[242.0, 1111, 'iron', 5],[4.0, 30, 'T', 0],[74.0, 118, 'K', 1]

In
###A Brief Review of Ferroelectric Control of Magnetoresistance in Organic Spin Valves|Xiaoshan Xu###
(1602297, 1602297)
In this spirit, ferroelectricity has been introduced to organic spin valves tomanipulate the magneto transport, where the spin transport through theferromagnet/organic spacer interfaces (spinterface) are under intensive study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###A Brief Review of Ferroelectric Control of Magnetoresistance in Organic Spin Valves|Xiaoshan Xu###
(1602429, 1602429)
 In this review, we first go over the basicconcepts of spin transport in organic spin valves.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Spin Filtering with Poly-T Wrapped Single Wall Carbon Nanotubes|K. M. Alam,Sandipan Pramanik###
(1603244, 1603244)
Recently, chiral systems such as D<missing VAR>NA have been shown to exhibit efficient spinfiltering, a phenomenon often dubbed as chirality induced spin selectivity(CISS).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 50, '%', 1],[114.0, 80, '%', 2]

(CISS)
###Spin Filtering with Poly-T Wrapped Single Wall Carbon Nanotubes|K. M. Alam,Sandipan Pramanik###
(1603284, 1603289)
Recently, chiral systems such as D<missing VAR>NA have been shown to exhibit efficient spinfiltering, a phenomenon often dubbed as chirality induced spin selectivity(CISS).
Featurization successful!
0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 50, '%', 1],[69.0, 80, '%', 2]

In
###Spin Filtering with Poly-T Wrapped Single Wall Carbon Nanotubes|K. M. Alam,Sandipan Pramanik###
(1603292, 1603292)
 In this work, we consider single wall carbon nanotubes helicallywrapped with single stranded poly-T DNA.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 50, '%', 2],[66.0, 80, '%', 1]

N
###Spin Filtering with Poly-T Wrapped Single Wall Carbon Nanotubes|K. M. Alam,Sandipan Pramanik###
(1603327, 1603327)
 In this work, we consider single wall carbon nanotubes helicallywrapped with single stranded poly-T DNA.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 50, '%', 2],[31.0, 80, '%', 1]

N
###Spin Filtering with Poly-T Wrapped Single Wall Carbon Nanotubes|K. M. Alam,Sandipan Pramanik###
(1603403, 1603403)
 By magnetoresistance measurements weshow that this system exhibits significant spin polarization of 80%, whichcould be attributed to the Rashba spin-orbit interaction induced by theinversion asymmetric helical potential of the D<missing VAR>NA.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[191.0, 50, '%', 3],[45.0, 80, '%', 0]

P
###Temperature effects of the magnetic tunnel junctions with periodic grating barrier|Henan Fang,Mingwen Xiao,Wenbin Rui,Jun Du,Zhikuo Tao###
(1603842, 1603842)
 From it, we find that the decrease of TMR with rising temperature ismostly carried by a change in the antiparallel resistance (R<missing VAR>AP), and theparallel resistance (R<missing VAR>P) changes so little that it seems roughly constant,if compared to the R<missing VAR>AP, and that, for the annealed MTJ, the R<missing VAR>AP issignificantly more sensitive to the strain than the R<missing VAR>P, and fornon-annealed MTJ, both the R<missing VAR>P and R<missing VAR>AP are not sensitive to thestrain.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Temperature effects of the magnetic tunnel junctions with periodic grating barrier|Henan Fang,Mingwen Xiao,Wenbin Rui,Jun Du,Zhikuo Tao###
(1603857, 1603857)
 From it, we find that the decrease of TMR with rising temperature ismostly carried by a change in the antiparallel resistance (R<missing VAR>AP), and theparallel resistance (R<missing VAR>P) changes so little that it seems roughly constant,if compared to the R<missing VAR>AP, and that, for the annealed MTJ, the R<missing VAR>AP issignificantly more sensitive to the strain than the R<missing VAR>P, and fornon-annealed MTJ, both the R<missing VAR>P and R<missing VAR>AP are not sensitive to thestrain.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Temperature effects of the magnetic tunnel junctions with periodic grating barrier|Henan Fang,Mingwen Xiao,Wenbin Rui,Jun Du,Zhikuo Tao###
(1603888, 1603888)
 From it, we find that the decrease of TMR with rising temperature ismostly carried by a change in the antiparallel resistance (R<missing VAR>AP), and theparallel resistance (R<missing VAR>P) changes so little that it seems roughly constant,if compared to the R<missing VAR>AP, and that, for the annealed MTJ, the R<missing VAR>AP issignificantly more sensitive to the strain than the R<missing VAR>P, and fornon-annealed MTJ, both the R<missing VAR>P and R<missing VAR>AP are not sensitive to thestrain.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Temperature effects of the magnetic tunnel junctions with periodic grating barrier|Henan Fang,Mingwen Xiao,Wenbin Rui,Jun Du,Zhikuo Tao###
(1603911, 1603911)
 From it, we find that the decrease of TMR with rising temperature ismostly carried by a change in the antiparallel resistance (R<missing VAR>AP), and theparallel resistance (R<missing VAR>P) changes so little that it seems roughly constant,if compared to the R<missing VAR>AP, and that, for the annealed MTJ, the R<missing VAR>AP issignificantly more sensitive to the strain than the R<missing VAR>P, and fornon-annealed MTJ, both the R<missing VAR>P and R<missing VAR>AP are not sensitive to thestrain.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Temperature effects of the magnetic tunnel junctions with periodic grating barrier|Henan Fang,Mingwen Xiao,Wenbin Rui,Jun Du,Zhikuo Tao###
(1603933, 1603933)
 From it, we find that the decrease of TMR with rising temperature ismostly carried by a change in the antiparallel resistance (R<missing VAR>AP), and theparallel resistance (R<missing VAR>P) changes so little that it seems roughly constant,if compared to the R<missing VAR>AP, and that, for the annealed MTJ, the R<missing VAR>AP issignificantly more sensitive to the strain than the R<missing VAR>P, and fornon-annealed MTJ, both the R<missing VAR>P and R<missing VAR>AP are not sensitive to thestrain.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Temperature effects of the magnetic tunnel junctions with periodic grating barrier|Henan Fang,Mingwen Xiao,Wenbin Rui,Jun Du,Zhikuo Tao###
(1603955, 1603955)
 From it, we find that the decrease of TMR with rising temperature ismostly carried by a change in the antiparallel resistance (R<missing VAR>AP), and theparallel resistance (R<missing VAR>P) changes so little that it seems roughly constant,if compared to the R<missing VAR>AP, and that, for the annealed MTJ, the R<missing VAR>AP issignificantly more sensitive to the strain than the R<missing VAR>P, and fornon-annealed MTJ, both the R<missing VAR>P and R<missing VAR>AP are not sensitive to thestrain.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Temperature effects of the magnetic tunnel junctions with periodic grating barrier|Henan Fang,Mingwen Xiao,Wenbin Rui,Jun Du,Zhikuo Tao###
(1603961, 1603961)
 From it, we find that the decrease of TMR with rising temperature ismostly carried by a change in the antiparallel resistance (R<missing VAR>AP), and theparallel resistance (R<missing VAR>P) changes so little that it seems roughly constant,if compared to the R<missing VAR>AP, and that, for the annealed MTJ, the R<missing VAR>AP issignificantly more sensitive to the strain than the R<missing VAR>P, and fornon-annealed MTJ, both the R<missing VAR>P and R<missing VAR>AP are not sensitive to thestrain.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Temperature effects of the magnetic tunnel junctions with periodic grating barrier|Henan Fang,Mingwen Xiao,Wenbin Rui,Jun Du,Zhikuo Tao###
(1603997, 1603998)
 They are both in agreement with the experiments of the MgO-based MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Berry phase induced localization to anti-localization transition in two-dimensional Dirac fermion systems|Ting Zhang,Jie Pan,Ping Sheng###
(1604236, 1604236)
 Through analyticaldiagrammatical calculations of electrical conductivity in the presence of longrange Coulomb scattering centers, we show that attendant with the variation ofthe Berry phase from 0 to pi as the Fermi energy moves away from the Diracpoint/band boundary, a continuous Anderson-localization (AL) toweak-localization (WL), and further to weak anti-localization (WAL) transitionoccurs, implying a change in the sign of the magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 2, 'by', 1],[137.0, 2, 'massive', 1],[51.0, 0, 'to', 0],[76.0, 2, 'D', 1]

W
###Berry phase induced localization to anti-localization transition in two-dimensional Dirac fermion systems|Ting Zhang,Jie Pan,Ping Sheng###
(1604254, 1604254)
 Through analyticaldiagrammatical calculations of electrical conductivity in the presence of longrange Coulomb scattering centers, we show that attendant with the variation ofthe Berry phase from 0 to pi as the Fermi energy moves away from the Diracpoint/band boundary, a continuous Anderson-localization (AL) toweak-localization (WL), and further to weak anti-localization (WAL) transitionoccurs, implying a change in the sign of the magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 2, 'by', 1],[155.0, 2, 'massive', 1],[69.0, 0, 'to', 0],[58.0, 2, 'D', 1]

W
###Berry phase induced localization to anti-localization transition in two-dimensional Dirac fermion systems|Ting Zhang,Jie Pan,Ping Sheng###
(1604335, 1604335)
 The WL<missing VAR> to WAL<missing VAR> transition occurs ata certain critical Berry phase despite the concentration of Coulomb impurities,while the MIT critical point, which is the distinguishing doping levelseparating the AL<missing VAR> and WL<missing VAR> phases, depends on the competition of conventionalconductivity and the negative maximally crossed diagram (MCD) corrections nearthe bottom of conduction band.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[237.0, 2, 'by', 3],[236.0, 2, 'massive', 3],[150.0, 0, 'to', 2],[23.0, 2, 'D', 1]

W
###Berry phase induced localization to anti-localization transition in two-dimensional Dirac fermion systems|Ting Zhang,Jie Pan,Ping Sheng###
(1604340, 1604340)
 The WL<missing VAR> to WAL<missing VAR> transition occurs ata certain critical Berry phase despite the concentration of Coulomb impurities,while the MIT critical point, which is the distinguishing doping levelseparating the AL<missing VAR> and WL<missing VAR> phases, depends on the competition of conventionalconductivity and the negative maximally crossed diagram (MCD) corrections nearthe bottom of conduction band.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[242.0, 2, 'by', 3],[241.0, 2, 'massive', 3],[155.0, 0, 'to', 2],[28.0, 2, 'D', 1]

W
###Berry phase induced localization to anti-localization transition in two-dimensional Dirac fermion systems|Ting Zhang,Jie Pan,Ping Sheng###
(1604410, 1604410)
 The WL<missing VAR> to WAL<missing VAR> transition occurs ata certain critical Berry phase despite the concentration of Coulomb impurities,while the MIT critical point, which is the distinguishing doping levelseparating the AL<missing VAR> and WL<missing VAR> phases, depends on the competition of conventionalconductivity and the negative maximally crossed diagram (MCD) corrections nearthe bottom of conduction band.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[312.0, 2, 'by', 3],[311.0, 2, 'massive', 3],[225.0, 0, 'to', 2],[98.0, 2, 'D', 1]

Mn
###Measurement independent magnetocaloric effect in Mn-rich Mn-Fe-Ni-Sn(Sb/In) Heusler alloys|Arup Ghosh,Rajeev Rawat,Arpan Bhattacharyya,Guruprasad Mandal,A. K. Nigam,Sunil Nair###
(1604483, 1604483)
Measurement independent magnetocaloric effect in Mn-rich Mn-Fe-Ni-Sn(Sb/In) Heusler alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[340.0, -2.6, 'K', 5],[373.0, 783, 'Oe', 6],[377.0, 5, 'K', 6],[387.0, -30, '%', 6]

Mn
###Measurement independent magnetocaloric effect in Mn-rich Mn-Fe-Ni-Sn(Sb/In) Heusler alloys|Arup Ghosh,Rajeev Rawat,Arpan Bhattacharyya,Guruprasad Mandal,A. K. Nigam,Sunil Nair###
(1604487, 1604487)
Measurement independent magnetocaloric effect in Mn-rich Mn-Fe-Ni-Sn(Sb/In) Heusler alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[336.0, -2.6, 'K', 5],[369.0, 783, 'Oe', 6],[373.0, 5, 'K', 6],[383.0, -30, '%', 6]

Fe
###Measurement independent magnetocaloric effect in Mn-rich Mn-Fe-Ni-Sn(Sb/In) Heusler alloys|Arup Ghosh,Rajeev Rawat,Arpan Bhattacharyya,Guruprasad Mandal,A. K. Nigam,Sunil Nair###
(1604489, 1604489)
Measurement independent magnetocaloric effect in Mn-rich Mn-Fe-Ni-Sn(Sb/In) Heusler alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[334.0, -2.6, 'K', 5],[367.0, 783, 'Oe', 6],[371.0, 5, 'K', 6],[381.0, -30, '%', 6]

Ni
###Measurement independent magnetocaloric effect in Mn-rich Mn-Fe-Ni-Sn(Sb/In) Heusler alloys|Arup Ghosh,Rajeev Rawat,Arpan Bhattacharyya,Guruprasad Mandal,A. K. Nigam,Sunil Nair###
(1604491, 1604491)
Measurement independent magnetocaloric effect in Mn-rich Mn-Fe-Ni-Sn(Sb/In) Heusler alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[332.0, -2.6, 'K', 5],[365.0, 783, 'Oe', 6],[369.0, 5, 'K', 6],[379.0, -30, '%', 6]

Sn
###Measurement independent magnetocaloric effect in Mn-rich Mn-Fe-Ni-Sn(Sb/In) Heusler alloys|Arup Ghosh,Rajeev Rawat,Arpan Bhattacharyya,Guruprasad Mandal,A. K. Nigam,Sunil Nair###
(1604493, 1604493)
Measurement independent magnetocaloric effect in Mn-rich Mn-Fe-Ni-Sn(Sb/In) Heusler alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[330.0, -2.6, 'K', 5],[363.0, 783, 'Oe', 6],[367.0, 5, 'K', 6],[377.0, -30, '%', 6]

In
###Measurement independent magnetocaloric effect in Mn-rich Mn-Fe-Ni-Sn(Sb/In) Heusler alloys|Arup Ghosh,Rajeev Rawat,Arpan Bhattacharyya,Guruprasad Mandal,A. K. Nigam,Sunil Nair###
(1604497, 1604497)
Measurement independent magnetocaloric effect in Mn-rich Mn-Fe-Ni-Sn(Sb/In) Heusler alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[326.0, -2.6, 'K', 5],[359.0, 783, 'Oe', 6],[363.0, 5, 'K', 6],[373.0, -30, '%', 6]

Mn
###Measurement independent magnetocaloric effect in Mn-rich Mn-Fe-Ni-Sn(Sb/In) Heusler alloys|Arup Ghosh,Rajeev Rawat,Arpan Bhattacharyya,Guruprasad Mandal,A. K. Nigam,Sunil Nair###
(1604527, 1604527)
 We report a systematic study on the magneto-structural transition in Mn-richFe-doped Mn-Fe-Ni-Sn(Sb/In) Heusler alloys by keeping the total valenceelectron concentration (e<missing VAR>/a ratio) fixed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[296.0, -2.6, 'K', 4],[329.0, 783, 'Oe', 5],[333.0, 5, 'K', 5],[343.0, -30, '%', 5]

Fe
###Measurement independent magnetocaloric effect in Mn-rich Mn-Fe-Ni-Sn(Sb/In) Heusler alloys|Arup Ghosh,Rajeev Rawat,Arpan Bhattacharyya,Guruprasad Mandal,A. K. Nigam,Sunil Nair###
(1604532, 1604532)
 We report a systematic study on the magneto-structural transition in Mn-richFe-doped Mn-Fe-Ni-Sn(Sb/In) Heusler alloys by keeping the total valenceelectron concentration (e<missing VAR>/a ratio) fixed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[291.0, -2.6, 'K', 4],[324.0, 783, 'Oe', 5],[328.0, 5, 'K', 5],[338.0, -30, '%', 5]

Mn
###Measurement independent magnetocaloric effect in Mn-rich Mn-Fe-Ni-Sn(Sb/In) Heusler alloys|Arup Ghosh,Rajeev Rawat,Arpan Bhattacharyya,Guruprasad Mandal,A. K. Nigam,Sunil Nair###
(1604536, 1604536)
 We report a systematic study on the magneto-structural transition in Mn-richFe-doped Mn-Fe-Ni-Sn(Sb/In) Heusler alloys by keeping the total valenceelectron concentration (e<missing VAR>/a ratio) fixed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[287.0, -2.6, 'K', 4],[320.0, 783, 'Oe', 5],[324.0, 5, 'K', 5],[334.0, -30, '%', 5]

Fe
###Measurement independent magnetocaloric effect in Mn-rich Mn-Fe-Ni-Sn(Sb/In) Heusler alloys|Arup Ghosh,Rajeev Rawat,Arpan Bhattacharyya,Guruprasad Mandal,A. K. Nigam,Sunil Nair###
(1604538, 1604538)
 We report a systematic study on the magneto-structural transition in Mn-richFe-doped Mn-Fe-Ni-Sn(Sb/In) Heusler alloys by keeping the total valenceelectron concentration (e<missing VAR>/a ratio) fixed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[285.0, -2.6, 'K', 4],[318.0, 783, 'Oe', 5],[322.0, 5, 'K', 5],[332.0, -30, '%', 5]

Ni
###Measurement independent magnetocaloric effect in Mn-rich Mn-Fe-Ni-Sn(Sb/In) Heusler alloys|Arup Ghosh,Rajeev Rawat,Arpan Bhattacharyya,Guruprasad Mandal,A. K. Nigam,Sunil Nair###
(1604540, 1604540)
 We report a systematic study on the magneto-structural transition in Mn-richFe-doped Mn-Fe-Ni-Sn(Sb/In) Heusler alloys by keeping the total valenceelectron concentration (e<missing VAR>/a ratio) fixed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[283.0, -2.6, 'K', 4],[316.0, 783, 'Oe', 5],[320.0, 5, 'K', 5],[330.0, -30, '%', 5]

Sn
###Measurement independent magnetocaloric effect in Mn-rich Mn-Fe-Ni-Sn(Sb/In) Heusler alloys|Arup Ghosh,Rajeev Rawat,Arpan Bhattacharyya,Guruprasad Mandal,A. K. Nigam,Sunil Nair###
(1604542, 1604542)
 We report a systematic study on the magneto-structural transition in Mn-richFe-doped Mn-Fe-Ni-Sn(Sb/In) Heusler alloys by keeping the total valenceelectron concentration (e<missing VAR>/a ratio) fixed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[281.0, -2.6, 'K', 4],[314.0, 783, 'Oe', 5],[318.0, 5, 'K', 5],[328.0, -30, '%', 5]

In
###Measurement independent magnetocaloric effect in Mn-rich Mn-Fe-Ni-Sn(Sb/In) Heusler alloys|Arup Ghosh,Rajeev Rawat,Arpan Bhattacharyya,Guruprasad Mandal,A. K. Nigam,Sunil Nair###
(1604546, 1604546)
 We report a systematic study on the magneto-structural transition in Mn-richFe-doped Mn-Fe-Ni-Sn(Sb/In) Heusler alloys by keeping the total valenceelectron concentration (e<missing VAR>/a ratio) fixed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[277.0, -2.6, 'K', 4],[310.0, 783, 'Oe', 5],[314.0, 5, 'K', 5],[324.0, -30, '%', 5]

(Mn49FeNi40Sn9In)
###Measurement independent magnetocaloric effect in Mn-rich Mn-Fe-Ni-Sn(Sb/In) Heusler alloys|Arup Ghosh,Rajeev Rawat,Arpan Bhattacharyya,Guruprasad Mandal,A. K. Nigam,Sunil Nair###
(1604655, 1604664)
 The magnetic entropy change across MTfor a selected sample (Mn49FeNi40Sn9In) has been estimated from three differentmeasurement methods (isofield magnetization (M) vs temperature (T), isothermalM<missing VAR> vs field (H) and heat capacity (HC) vs T).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.49,0.01,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.01,0.09,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[159.0, -2.6, 'K', 2],[192.0, 783, 'Oe', 3],[196.0, 5, 'K', 3],[206.0, -30, '%', 3]

(H)
###Measurement independent magnetocaloric effect in Mn-rich Mn-Fe-Ni-Sn(Sb/In) Heusler alloys|Arup Ghosh,Rajeev Rawat,Arpan Bhattacharyya,Guruprasad Mandal,A. K. Nigam,Sunil Nair###
(1604710, 1604712)
 The magnetic entropy change across MTfor a selected sample (Mn49FeNi40Sn9In) has been estimated from three differentmeasurement methods (isofield magnetization (M) vs temperature (T), isothermalM<missing VAR> vs field (H) and heat capacity (HC) vs T).
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, -2.6, 'K', 2],[144.0, 783, 'Oe', 3],[148.0, 5, 'K', 3],[158.0, -30, '%', 3]

(HC)
###Measurement independent magnetocaloric effect in Mn-rich Mn-Fe-Ni-Sn(Sb/In) Heusler alloys|Arup Ghosh,Rajeev Rawat,Arpan Bhattacharyya,Guruprasad Mandal,A. K. Nigam,Sunil Nair###
(1604720, 1604723)
 The magnetic entropy change across MTfor a selected sample (Mn49FeNi40Sn9In) has been estimated from three differentmeasurement methods (isofield magnetization (M) vs temperature (T), isothermalM<missing VAR> vs field (H) and heat capacity (HC) vs T).
Featurization successful!
0.5,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, -2.6, 'K', 2],[133.0, 783, 'Oe', 3],[137.0, 5, 'K', 3],[147.0, -30, '%', 3]

B20
###Helical magnetic structure and the anomalous and topological Hall effects in epitaxial B20 Fe$_{1-y}$Co$_y$Ge films|Charles S. Spencer,Jacob Gayles,Nicholas A. Porter,Satoshi Sugimoto,Zabeada Aslam,Christian J. Kinane,Timothy R. Charlton,Frank Freimuth,Stanislav Chadov,Sean Langridge,Jairo Sinova,Claudia Felser,Stefan Blügel,Yuriy Mokrousov,Christopher H. Marrows###
(1604924, 1604925)
Helical magnetic structure and the anomalous and topological Hall effects in epitaxial B20 Fe1-yCoy<missing VAR>Ge films.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[447.0, 0.6, ',', 10]

Fe1-yCo
###Helical magnetic structure and the anomalous and topological Hall effects in epitaxial B20 Fe$_{1-y}$Co$_y$Ge films|Charles S. Spencer,Jacob Gayles,Nicholas A. Porter,Satoshi Sugimoto,Zabeada Aslam,Christian J. Kinane,Timothy R. Charlton,Frank Freimuth,Stanislav Chadov,Sean Langridge,Jairo Sinova,Claudia Felser,Stefan Blügel,Yuriy Mokrousov,Christopher H. Marrows###
(1604927, 1604931)
Helical magnetic structure and the anomalous and topological Hall effects in epitaxial B20 Fe1-yCoy<missing VAR>Ge films.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[441.0, 0.6, ',', 10]

Ge
###Helical magnetic structure and the anomalous and topological Hall effects in epitaxial B20 Fe$_{1-y}$Co$_y$Ge films|Charles S. Spencer,Jacob Gayles,Nicholas A. Porter,Satoshi Sugimoto,Zabeada Aslam,Christian J. Kinane,Timothy R. Charlton,Frank Freimuth,Stanislav Chadov,Sean Langridge,Jairo Sinova,Claudia Felser,Stefan Blügel,Yuriy Mokrousov,Christopher H. Marrows###
(1604933, 1604933)
Helical magnetic structure and the anomalous and topological Hall effects in epitaxial B20 Fe1-yCoy<missing VAR>Ge films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[439.0, 0.6, ',', 10]

B20
###Helical magnetic structure and the anomalous and topological Hall effects in epitaxial B20 Fe$_{1-y}$Co$_y$Ge films|Charles S. Spencer,Jacob Gayles,Nicholas A. Porter,Satoshi Sugimoto,Zabeada Aslam,Christian J. Kinane,Timothy R. Charlton,Frank Freimuth,Stanislav Chadov,Sean Langridge,Jairo Sinova,Claudia Felser,Stefan Blügel,Yuriy Mokrousov,Christopher H. Marrows###
(1604946, 1604947)
 Epitaxial films of the B20-structure alloy Fe1-yCoy<missing VAR>Ge were grown bymolecular beam epitaxy on Si (111) substrates.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[425.0, 0.6, ',', 9]

Fe1-yCo
###Helical magnetic structure and the anomalous and topological Hall effects in epitaxial B20 Fe$_{1-y}$Co$_y$Ge films|Charles S. Spencer,Jacob Gayles,Nicholas A. Porter,Satoshi Sugimoto,Zabeada Aslam,Christian J. Kinane,Timothy R. Charlton,Frank Freimuth,Stanislav Chadov,Sean Langridge,Jairo Sinova,Claudia Felser,Stefan Blügel,Yuriy Mokrousov,Christopher H. Marrows###
(1604953, 1604957)
 Epitaxial films of the B20-structure alloy Fe1-yCoy<missing VAR>Ge were grown bymolecular beam epitaxy on Si (111) substrates.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[415.0, 0.6, ',', 9]

Ge
###Helical magnetic structure and the anomalous and topological Hall effects in epitaxial B20 Fe$_{1-y}$Co$_y$Ge films|Charles S. Spencer,Jacob Gayles,Nicholas A. Porter,Satoshi Sugimoto,Zabeada Aslam,Christian J. Kinane,Timothy R. Charlton,Frank Freimuth,Stanislav Chadov,Sean Langridge,Jairo Sinova,Claudia Felser,Stefan Blügel,Yuriy Mokrousov,Christopher H. Marrows###
(1604959, 1604959)
 Epitaxial films of the B20-structure alloy Fe1-yCoy<missing VAR>Ge were grown bymolecular beam epitaxy on Si (111) substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[413.0, 0.6, ',', 9]

Si
###Helical magnetic structure and the anomalous and topological Hall effects in epitaxial B20 Fe$_{1-y}$Co$_y$Ge films|Charles S. Spencer,Jacob Gayles,Nicholas A. Porter,Satoshi Sugimoto,Zabeada Aslam,Christian J. Kinane,Timothy R. Charlton,Frank Freimuth,Stanislav Chadov,Sean Langridge,Jairo Sinova,Claudia Felser,Stefan Blügel,Yuriy Mokrousov,Christopher H. Marrows###
(1604976, 1604976)
 Epitaxial films of the B20-structure alloy Fe1-yCoy<missing VAR>Ge were grown bymolecular beam epitaxy on Si (111) substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[396.0, 0.6, ',', 9]

Fe
###Helical magnetic structure and the anomalous and topological Hall effects in epitaxial B20 Fe$_{1-y}$Co$_y$Ge films|Charles S. Spencer,Jacob Gayles,Nicholas A. Porter,Satoshi Sugimoto,Zabeada Aslam,Christian J. Kinane,Timothy R. Charlton,Frank Freimuth,Stanislav Chadov,Sean Langridge,Jairo Sinova,Claudia Felser,Stefan Blügel,Yuriy Mokrousov,Christopher H. Marrows###
(1605014, 1605014)
 The magnetization variedsmoothly from the bulk-like values of one Bohr magneton per Fe atom for FeGe tozero for non-magnetic CoGe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[358.0, 0.6, ',', 8]

FeGe
###Helical magnetic structure and the anomalous and topological Hall effects in epitaxial B20 Fe$_{1-y}$Co$_y$Ge films|Charles S. Spencer,Jacob Gayles,Nicholas A. Porter,Satoshi Sugimoto,Zabeada Aslam,Christian J. Kinane,Timothy R. Charlton,Frank Freimuth,Stanislav Chadov,Sean Langridge,Jairo Sinova,Claudia Felser,Stefan Blügel,Yuriy Mokrousov,Christopher H. Marrows###
(1605020, 1605021)
 The magnetization variedsmoothly from the bulk-like values of one Bohr magneton per Fe atom for FeGe tozero for non-magnetic CoGe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[351.0, 0.6, ',', 8]

CoGe
###Helical magnetic structure and the anomalous and topological Hall effects in epitaxial B20 Fe$_{1-y}$Co$_y$Ge films|Charles S. Spencer,Jacob Gayles,Nicholas A. Porter,Satoshi Sugimoto,Zabeada Aslam,Christian J. Kinane,Timothy R. Charlton,Frank Freimuth,Stanislav Chadov,Sean Langridge,Jairo Sinova,Claudia Felser,Stefan Blügel,Yuriy Mokrousov,Christopher H. Marrows###
(1605034, 1605035)
 The magnetization variedsmoothly from the bulk-like values of one Bohr magneton per Fe atom for FeGe tozero for non-magnetic CoGe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[337.0, 0.6, ',', 8]

I
###Helical magnetic structure and the anomalous and topological Hall effects in epitaxial B20 Fe$_{1-y}$Co$_y$Ge films|Charles S. Spencer,Jacob Gayles,Nicholas A. Porter,Satoshi Sugimoto,Zabeada Aslam,Christian J. Kinane,Timothy R. Charlton,Frank Freimuth,Stanislav Chadov,Sean Langridge,Jairo Sinova,Claudia Felser,Stefan Blügel,Yuriy Mokrousov,Christopher H. Marrows###
(1605062, 1605062)
 The chiral lattice structure leads to aDzyaloshinskii-Moriya interaction (DMI), and the films helical magnetic groundstate was confirmed using polarized neutron reflectometry measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[310.0, 0.6, ',', 7]

Co
###Helical magnetic structure and the anomalous and topological Hall effects in epitaxial B20 Fe$_{1-y}$Co$_y$Ge films|Charles S. Spencer,Jacob Gayles,Nicholas A. Porter,Satoshi Sugimoto,Zabeada Aslam,Christian J. Kinane,Timothy R. Charlton,Frank Freimuth,Stanislav Chadov,Sean Langridge,Jairo Sinova,Claudia Felser,Stefan Blügel,Yuriy Mokrousov,Christopher H. Marrows###
(1605123, 1605123)
 Thepitch of the spin helix, measured by this method, varies with Co content y<missing VAR>and diverges at y<missing VAR> sim 0.45.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[249.0, 0.6, ',', 6]

I
###Helical magnetic structure and the anomalous and topological Hall effects in epitaxial B20 Fe$_{1-y}$Co$_y$Ge films|Charles S. Spencer,Jacob Gayles,Nicholas A. Porter,Satoshi Sugimoto,Zabeada Aslam,Christian J. Kinane,Timothy R. Charlton,Frank Freimuth,Stanislav Chadov,Sean Langridge,Jairo Sinova,Claudia Felser,Stefan Blügel,Yuriy Mokrousov,Christopher H. Marrows###
(1605159, 1605159)
 This indicates a zero-crossing of the DMI, whichwe reproduced in calculations using first principle methods.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[213.0, 0.6, ',', 5]

Co
###Helical magnetic structure and the anomalous and topological Hall effects in epitaxial B20 Fe$_{1-y}$Co$_y$Ge films|Charles S. Spencer,Jacob Gayles,Nicholas A. Porter,Satoshi Sugimoto,Zabeada Aslam,Christian J. Kinane,Timothy R. Charlton,Frank Freimuth,Stanislav Chadov,Sean Langridge,Jairo Sinova,Claudia Felser,Stefan Blügel,Yuriy Mokrousov,Christopher H. Marrows###
(1605224, 1605224)
 We also measuredthe longitudinal and Hall resistivity of our films as a function of magneticfield, temperature, and Co content y<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 0.6, ',', 4]

FeGe
###Helical magnetic structure and the anomalous and topological Hall effects in epitaxial B20 Fe$_{1-y}$Co$_y$Ge films|Charles S. Spencer,Jacob Gayles,Nicholas A. Porter,Satoshi Sugimoto,Zabeada Aslam,Christian J. Kinane,Timothy R. Charlton,Frank Freimuth,Stanislav Chadov,Sean Langridge,Jairo Sinova,Claudia Felser,Stefan Blügel,Yuriy Mokrousov,Christopher H. Marrows###
(1605428, 1605429)
 Whilst it is possible to reconciletheory with experiment for the various Hall effects for FeGe, the largetopological Hall resistivities for y<missing VAR> sim 0.5 are much larger then expectedwhen the very small emergent fields associated with the divergence in the DMIare taken into account.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 0.6, ',', 1]

I
###Helical magnetic structure and the anomalous and topological Hall effects in epitaxial B20 Fe$_{1-y}$Co$_y$Ge films|Charles S. Spencer,Jacob Gayles,Nicholas A. Porter,Satoshi Sugimoto,Zabeada Aslam,Christian J. Kinane,Timothy R. Charlton,Frank Freimuth,Stanislav Chadov,Sean Langridge,Jairo Sinova,Claudia Felser,Stefan Blügel,Yuriy Mokrousov,Christopher H. Marrows###
(1605488, 1605488)
 Whilst it is possible to reconciletheory with experiment for the various Hall effects for FeGe, the largetopological Hall resistivities for y<missing VAR> sim 0.5 are much larger then expectedwhen the very small emergent fields associated with the divergence in the DMIare taken into account.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 0.6, ',', 1]

As
###Spin transport across antiferromagnets induced by the spin Seebeck effect|Joel Cramer,Ulrike Ritzmann,Bo-Wen Dong,Samridh Jaiswal,Zhiyong Qiu,Eiji Saitoh,Ulrich Nowak,Mathias Kläui###
(1605721, 1605721)
 As an experimental system, weascertain the transport across an antiferromagnet inYIG<missing VAR>Ir20Mn80Pt heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YI
###Spin transport across antiferromagnets induced by the spin Seebeck effect|Joel Cramer,Ulrike Ritzmann,Bo-Wen Dong,Samridh Jaiswal,Zhiyong Qiu,Eiji Saitoh,Ulrich Nowak,Mathias Kläui###
(1605748, 1605749)
 As an experimental system, weascertain the transport across an antiferromagnet inYIG<missing VAR>Ir20Mn80Pt heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ir20Mn80Pt
###Spin transport across antiferromagnets induced by the spin Seebeck effect|Joel Cramer,Ulrike Ritzmann,Bo-Wen Dong,Samridh Jaiswal,Zhiyong Qiu,Eiji Saitoh,Ulrich Nowak,Mathias Kläui###
(1605751, 1605755)
 As an experimental system, weascertain the transport across an antiferromagnet inYIG<missing VAR>Ir20Mn80Pt heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7920792079207921,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.19801980198019803,0.009900990099009901,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YI
###Spin transport across antiferromagnets induced by the spin Seebeck effect|Joel Cramer,Ulrike Ritzmann,Bo-Wen Dong,Samridh Jaiswal,Zhiyong Qiu,Eiji Saitoh,Ulrich Nowak,Mathias Kläui###
(1605785, 1605786)
 We determine the spin transportsignals for spin currents generated in the YIG<missing VAR> by the spin Seebeck effect andcompare to measurements of the spin Hall magnetoresistance in theheterostructure stack.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

IrMn
###Spin transport across antiferromagnets induced by the spin Seebeck effect|Joel Cramer,Ulrike Ritzmann,Bo-Wen Dong,Samridh Jaiswal,Zhiyong Qiu,Eiji Saitoh,Ulrich Nowak,Mathias Kläui###
(1605867, 1605868)
 By means of temperature-dependent andthickness-dependent measurements, we deduce conclusions on the spin transportmechanism across IrMn and furthermore correlate it to itsparamagnetic-antiferromagnetic phase transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi1-xSb
###Observation of Chiral character deep in the topological insulating regime in Bi$_{1-x}$Sb$_x$|Amit,R. K. Gopal,Yogesh Singh###
(1605922, 1605926)
Observation of Chiral character deep in the topological insulating regime in Bi1-xSbx<missing VAR>.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[55.0, 0.03, ',', 2],[217.0, 0.032, ',', 4],[220.0, 0.072, ',', 4]

Bi1-xSb
###Observation of Chiral character deep in the topological insulating regime in Bi$_{1-x}$Sb$_x$|Amit,R. K. Gopal,Yogesh Singh###
(1605930, 1605934)
 Bi1-xSbx<missing VAR> is a topological insulator (T<missing VAR>I) for x<missing VAR> approx 0.03--0.20.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[47.0, 0.03, ',', 1],[209.0, 0.032, ',', 3],[212.0, 0.072, ',', 3]

I
###Observation of Chiral character deep in the topological insulating regime in Bi$_{1-x}$Sb$_x$|Amit,R. K. Gopal,Yogesh Singh###
(1605947, 1605947)
 Bi1-xSbx<missing VAR> is a topological insulator (T<missing VAR>I) for x<missing VAR> approx 0.03--0.20.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 0.03, ',', 1],[196.0, 0.032, ',', 3],[199.0, 0.072, ',', 3]

WS
###Observation of Chiral character deep in the topological insulating regime in Bi$_{1-x}$Sb$_x$|Amit,R. K. Gopal,Yogesh Singh###
(1606000, 1606001)
 Close to the Topological phase transition at x<missing VAR>  0.03, a magneticfield induced Weyl semi-metal (WSM) state is stabilized due to the splitting ofthe Dirac cone into two Weyl cones of opposite chirality.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 0.03, ',', 0],[142.0, 0.032, ',', 2],[145.0, 0.072, ',', 2]

I
###Observation of Chiral character deep in the topological insulating regime in Bi$_{1-x}$Sb$_x$|Amit,R. K. Gopal,Yogesh Singh###
(1606105, 1606105)
 A signature of theWeyl state is the observation of a Chiral anomaly [negative longitudnalmagnetoresistance (LMR)] and a violation of the Ohms<missing VAR> law (non-linear I-V).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 0.03, ',', 1],[38.0, 0.032, ',', 1],[41.0, 0.072, ',', 1]

V
###Observation of Chiral character deep in the topological insulating regime in Bi$_{1-x}$Sb$_x$|Amit,R. K. Gopal,Yogesh Singh###
(1606107, 1606107)
 A signature of theWeyl state is the observation of a Chiral anomaly [negative longitudnalmagnetoresistance (LMR)] and a violation of the Ohms<missing VAR> law (non-linear I-V).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 0.03, ',', 1],[36.0, 0.032, ',', 1],[39.0, 0.072, ',', 1]

I
###Observation of Chiral character deep in the topological insulating regime in Bi$_{1-x}$Sb$_x$|Amit,R. K. Gopal,Yogesh Singh###
(1606157, 1606157)
We report the unexpected discovery of a Chiral anomaly in the whole range (x<missing VAR> 0.032, 0.072, 0.16) of the T<missing VAR>I state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[176.0, 0.03, ',', 2],[14.0, 0.032, ',', 0],[11.0, 0.072, ',', 0]

WS
###Observation of Chiral character deep in the topological insulating regime in Bi$_{1-x}$Sb$_x$|Amit,R. K. Gopal,Yogesh Singh###
(1606174, 1606175)
 This points to a field induced WSM<missing VAR> statein an extended x<missing VAR> range and not just near the topological transition at x<missing VAR> 0.03.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[193.0, 0.03, ',', 3],[31.0, 0.032, ',', 1],[28.0, 0.072, ',', 1]

B
###Observation of Chiral character deep in the topological insulating regime in Bi$_{1-x}$Sb$_x$|Amit,R. K. Gopal,Yogesh Singh###
(1606288, 1606288)
 Thenegative LMR vanishes rapidly with increasing angle between B and I.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[307.0, 0.03, ',', 5],[145.0, 0.032, ',', 3],[142.0, 0.072, ',', 3]

I
###Observation of Chiral character deep in the topological insulating regime in Bi$_{1-x}$Sb$_x$|Amit,R. K. Gopal,Yogesh Singh###
(1606292, 1606292)
 Thenegative LMR vanishes rapidly with increasing angle between B and I.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[311.0, 0.03, ',', 5],[149.0, 0.032, ',', 3],[146.0, 0.072, ',', 3]

I
###Observation of Chiral character deep in the topological insulating regime in Bi$_{1-x}$Sb$_x$|Amit,R. K. Gopal,Yogesh Singh###
(1606303, 1606303)
Additionally, non-linear I--V is found for x<missing VAR>  0.16 indicating aviolation of Ohms<missing VAR> law.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[322.0, 0.03, ',', 6],[160.0, 0.032, ',', 4],[157.0, 0.072, ',', 4]

V
###Observation of Chiral character deep in the topological insulating regime in Bi$_{1-x}$Sb$_x$|Amit,R. K. Gopal,Yogesh Singh###
(1606306, 1606306)
Additionally, non-linear I--V is found for x<missing VAR>  0.16 indicating aviolation of Ohms<missing VAR> law.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[325.0, 0.03, ',', 6],[163.0, 0.032, ',', 4],[160.0, 0.072, ',', 4]

I
###Observation of Chiral character deep in the topological insulating regime in Bi$_{1-x}$Sb$_x$|Amit,R. K. Gopal,Yogesh Singh###
(1606358, 1606358)
 This unexpected observation of a strong Weyl state inthe whole T<missing VAR>I regime in Bi1-xSbx<missing VAR> points to a gap in our understanding ofthe detailed electronic structure evolution in this alloy system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[377.0, 0.03, ',', 7],[215.0, 0.032, ',', 5],[212.0, 0.072, ',', 5]

Bi1-xSb
###Observation of Chiral character deep in the topological insulating regime in Bi$_{1-x}$Sb$_x$|Amit,R. K. Gopal,Yogesh Singh###
(1606364, 1606368)
 This unexpected observation of a strong Weyl state inthe whole T<missing VAR>I regime in Bi1-xSbx<missing VAR> points to a gap in our understanding ofthe detailed electronic structure evolution in this alloy system.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[383.0, 0.03, ',', 7],[221.0, 0.032, ',', 5],[218.0, 0.072, ',', 5]

Co2FeSi
###Diffuson contribution to anomalous Hall effect in disordered Co2FeSi thin films|Binoy Krishna Hazra,S. N. Kaul,S. Srinath,M. Manivel Raja,R. Rawat,Archana Lakhani###
(1606431, 1606434)
Diffuson contribution to anomalous Hall effect in disordered Co2FeSi thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0.25,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 600, 'C', 1]

Co2FeSi
###Diffuson contribution to anomalous Hall effect in disordered Co2FeSi thin films|Binoy Krishna Hazra,S. N. Kaul,S. Srinath,M. Manivel Raja,R. Rawat,Archana Lakhani###
(1606483, 1606486)
 A wide variation in the disorder strength, as inferred from an order ofmagnitude variation in the longitudinal resistivity of Co2FeSi (CFS) Huesleralloy thin films of fixed (50 nm) thickness, has been achieved by growing thesefilms on Si(111) substrates at substrate temperatures ranging from roomtemperature (RT) to 600 C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0.25,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 600, 'C', 0]

(CFS)
###Diffuson contribution to anomalous Hall effect in disordered Co2FeSi thin films|Binoy Krishna Hazra,S. N. Kaul,S. Srinath,M. Manivel Raja,R. Rawat,Archana Lakhani###
(1606488, 1606492)
 A wide variation in the disorder strength, as inferred from an order ofmagnitude variation in the longitudinal resistivity of Co2FeSi (CFS) Huesleralloy thin films of fixed (50 nm) thickness, has been achieved by growing thesefilms on Si(111) substrates at substrate temperatures ranging from roomtemperature (RT) to 600 C.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 600, 'C', 0]

H
###Diffuson contribution to anomalous Hall effect in disordered Co2FeSi thin films|Binoy Krishna Hazra,S. N. Kaul,S. Srinath,M. Manivel Raja,R. Rawat,Archana Lakhani###
(1606648, 1606648)
 The side-jump mechanism givesa dominant contribution to anomalous Hall resistivity (AHR) in the CFS thinfilms, regardless of the degree of disorder present.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 600, 'C', 2]

CFS
###Diffuson contribution to anomalous Hall effect in disordered Co2FeSi thin films|Binoy Krishna Hazra,S. N. Kaul,S. Srinath,M. Manivel Raja,R. Rawat,Archana Lakhani###
(1606656, 1606658)
 The side-jump mechanism givesa dominant contribution to anomalous Hall resistivity (AHR) in the CFS thinfilms, regardless of the degree of disorder present.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 600, 'C', 2]

H
###Diffuson contribution to anomalous Hall effect in disordered Co2FeSi thin films|Binoy Krishna Hazra,S. N. Kaul,S. Srinath,M. Manivel Raja,R. Rawat,Archana Lakhani###
(1606702, 1606702)
 A new and novelcontribution to both LR and AHR<missing VAR> characterized by the logarithmic temperaturedependence at temperatures below the minimum, exclusive to the amorphous CFSfilms, originates from the scattering of conduction electrons from thediffusive hydrodynamic modes associated with the longitudinal component ofmagnetization, called diffusons.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 600, 'C', 3]

CFS
###Diffuson contribution to anomalous Hall effect in disordered Co2FeSi thin films|Binoy Krishna Hazra,S. N. Kaul,S. Srinath,M. Manivel Raja,R. Rawat,Archana Lakhani###
(1606737, 1606739)
 A new and novelcontribution to both LR and AHR<missing VAR> characterized by the logarithmic temperaturedependence at temperatures below the minimum, exclusive to the amorphous CFSfilms, originates from the scattering of conduction electrons from thediffusive hydrodynamic modes associated with the longitudinal component ofmagnetization, called diffusons.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[176.0, 600, 'C', 3]

In
###Diffuson contribution to anomalous Hall effect in disordered Co2FeSi thin films|Binoy Krishna Hazra,S. N. Kaul,S. Srinath,M. Manivel Raja,R. Rawat,Archana Lakhani###
(1606791, 1606791)
 In these amorphous CFS films, theelectron-diffuson, e d, scattering and weak localization (WL) mechanismscompete with that arising from the inelastic electron magnon, e m, scatteringto produce the minimum in longitudinal resistivity, whereas the minimum in AHR<missing VAR>is caused by the competing contributions from the e d and e m scattering, as WL<missing VAR>does not make any contribution to AHR<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[230.0, 600, 'C', 4]

CFS
###Diffuson contribution to anomalous Hall effect in disordered Co2FeSi thin films|Binoy Krishna Hazra,S. N. Kaul,S. Srinath,M. Manivel Raja,R. Rawat,Archana Lakhani###
(1606797, 1606799)
 In these amorphous CFS films, theelectron-diffuson, e d, scattering and weak localization (WL) mechanismscompete with that arising from the inelastic electron magnon, e m, scatteringto produce the minimum in longitudinal resistivity, whereas the minimum in AHR<missing VAR>is caused by the competing contributions from the e d and e m scattering, as WL<missing VAR>does not make any contribution to AHR<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[236.0, 600, 'C', 4]

W
###Diffuson contribution to anomalous Hall effect in disordered Co2FeSi thin films|Binoy Krishna Hazra,S. N. Kaul,S. Srinath,M. Manivel Raja,R. Rawat,Archana Lakhani###
(1606826, 1606826)
 In these amorphous CFS films, theelectron-diffuson, e d, scattering and weak localization (WL) mechanismscompete with that arising from the inelastic electron magnon, e m, scatteringto produce the minimum in longitudinal resistivity, whereas the minimum in AHR<missing VAR>is caused by the competing contributions from the e d and e m scattering, as WL<missing VAR>does not make any contribution to AHR<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[265.0, 600, 'C', 4]

H
###Diffuson contribution to anomalous Hall effect in disordered Co2FeSi thin films|Binoy Krishna Hazra,S. N. Kaul,S. Srinath,M. Manivel Raja,R. Rawat,Archana Lakhani###
(1606884, 1606884)
 In these amorphous CFS films, theelectron-diffuson, e d, scattering and weak localization (WL) mechanismscompete with that arising from the inelastic electron magnon, e m, scatteringto produce the minimum in longitudinal resistivity, whereas the minimum in AHR<missing VAR>is caused by the competing contributions from the e d and e m scattering, as WL<missing VAR>does not make any contribution to AHR<missing VAR>.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[323.0, 600, 'C', 4]

W
###Diffuson contribution to anomalous Hall effect in disordered Co2FeSi thin films|Binoy Krishna Hazra,S. N. Kaul,S. Srinath,M. Manivel Raja,R. Rawat,Archana Lakhani###
(1606919, 1606919)
 In these amorphous CFS films, theelectron-diffuson, e d, scattering and weak localization (WL) mechanismscompete with that arising from the inelastic electron magnon, e m, scatteringto produce the minimum in longitudinal resistivity, whereas the minimum in AHR<missing VAR>is caused by the competing contributions from the e d and e m scattering, as WL<missing VAR>does not make any contribution to AHR<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[358.0, 600, 'C', 4]

H
###Diffuson contribution to anomalous Hall effect in disordered Co2FeSi thin films|Binoy Krishna Hazra,S. N. Kaul,S. Srinath,M. Manivel Raja,R. Rawat,Archana Lakhani###
(1606936, 1606936)
 In these amorphous CFS films, theelectron-diffuson, e d, scattering and weak localization (WL) mechanismscompete with that arising from the inelastic electron magnon, e m, scatteringto produce the minimum in longitudinal resistivity, whereas the minimum in AHR<missing VAR>is caused by the competing contributions from the e d and e m scattering, as WL<missing VAR>does not make any contribution to AHR<missing VAR>.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[375.0, 600, 'C', 4]

In
###Diffuson contribution to anomalous Hall effect in disordered Co2FeSi thin films|Binoy Krishna Hazra,S. N. Kaul,S. Srinath,M. Manivel Raja,R. Rawat,Archana Lakhani###
(1606940, 1606940)
 In sharp contrast, in crystalline films,enhanced electron electron Coulomb interaction (EEI), which is basicallyresponsible for the resistivity minimum, makes no contribution to AHR<missing VAR> with theresult that AHR<missing VAR> does not exhibit a minimum.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[379.0, 600, 'C', 5]

I
###Diffuson contribution to anomalous Hall effect in disordered Co2FeSi thin films|Binoy Krishna Hazra,S. N. Kaul,S. Srinath,M. Manivel Raja,R. Rawat,Archana Lakhani###
(1606968, 1606968)
 In sharp contrast, in crystalline films,enhanced electron electron Coulomb interaction (EEI), which is basicallyresponsible for the resistivity minimum, makes no contribution to AHR<missing VAR> with theresult that AHR<missing VAR> does not exhibit a minimum.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[407.0, 600, 'C', 5]

H
###Diffuson contribution to anomalous Hall effect in disordered Co2FeSi thin films|Binoy Krishna Hazra,S. N. Kaul,S. Srinath,M. Manivel Raja,R. Rawat,Archana Lakhani###
(1606999, 1606999)
 In sharp contrast, in crystalline films,enhanced electron electron Coulomb interaction (EEI), which is basicallyresponsible for the resistivity minimum, makes no contribution to AHR<missing VAR> with theresult that AHR<missing VAR> does not exhibit a minimum.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[438.0, 600, 'C', 5]

H
###Diffuson contribution to anomalous Hall effect in disordered Co2FeSi thin films|Binoy Krishna Hazra,S. N. Kaul,S. Srinath,M. Manivel Raja,R. Rawat,Archana Lakhani###
(1607012, 1607012)
 In sharp contrast, in crystalline films,enhanced electron electron Coulomb interaction (EEI), which is basicallyresponsible for the resistivity minimum, makes no contribution to AHR<missing VAR> with theresult that AHR<missing VAR> does not exhibit a minimum.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[451.0, 600, 'C', 5]

Ti
###Collapse of ferromagnetism with Ti doping in Sm$_{0.55}$Sr$_{0.45}$MnO$_3$: A combined experimental and theoretical study|P. Sarkar,N. Khan,K. Pradhan,P. Mandal###
(1607042, 1607042)
Collapse of ferromagnetism with Ti doping in Sm0.55Sr0.45MnO3 A combined experimental and theoretical study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 128, 'K', 2],[182.0, 22, 'K', 3],[244.0, 0.03, ',', 4],[258.0, 1, 'T', 4],[284.0, 63, 'K', 4],[373.0, 0.03, ',', 6],[396.0, 2, 'K', 6]

Sm0.55Sr0.45MnO3
###Collapse of ferromagnetism with Ti doping in Sm$_{0.55}$Sr$_{0.45}$MnO$_3$: A combined experimental and theoretical study|P. Sarkar,N. Khan,K. Pradhan,P. Mandal###
(1607048, 1607054)
Collapse of ferromagnetism with Ti doping in Sm0.55Sr0.45MnO3 A combined experimental and theoretical study.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.09,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.11000000000000001,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 128, 'K', 2],[170.0, 22, 'K', 3],[232.0, 0.03, ',', 4],[246.0, 1, 'T', 4],[272.0, 63, 'K', 4],[361.0, 0.03, ',', 6],[384.0, 2, 'K', 6]

Ti
###Collapse of ferromagnetism with Ti doping in Sm$_{0.55}$Sr$_{0.45}$MnO$_3$: A combined experimental and theoretical study|P. Sarkar,N. Khan,K. Pradhan,P. Mandal###
(1607081, 1607081)
 We have investigated the effect of Ti doping on the transport propertiescoupled with the magnetic ones inSm0.55Sr0.45Mn1-etaTietaO3 (0 leq eta leq 0.04).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 128, 'K', 1],[143.0, 22, 'K', 2],[205.0, 0.03, ',', 3],[219.0, 1, 'T', 3],[245.0, 63, 'K', 3],[334.0, 0.03, ',', 5],[357.0, 2, 'K', 5]

Sm0.55Sr0.45Mn1
###Collapse of ferromagnetism with Ti doping in Sm$_{0.55}$Sr$_{0.45}$MnO$_3$: A combined experimental and theoretical study|P. Sarkar,N. Khan,K. Pradhan,P. Mandal###
(1607107, 1607112)
 We have investigated the effect of Ti doping on the transport propertiescoupled with the magnetic ones inSm0.55Sr0.45Mn1-etaTietaO3 (0 leq eta leq 0.04).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.225,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.275,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 128, 'K', 1],[112.0, 22, 'K', 2],[174.0, 0.03, ',', 3],[188.0, 1, 'T', 3],[214.0, 63, 'K', 3],[303.0, 0.03, ',', 5],[326.0, 2, 'K', 5]

Ti
###Collapse of ferromagnetism with Ti doping in Sm$_{0.55}$Sr$_{0.45}$MnO$_3$: A combined experimental and theoretical study|P. Sarkar,N. Khan,K. Pradhan,P. Mandal###
(1607115, 1607115)
 We have investigated the effect of Ti doping on the transport propertiescoupled with the magnetic ones inSm0.55Sr0.45Mn1-etaTietaO3 (0 leq eta leq 0.04).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 128, 'K', 1],[109.0, 22, 'K', 2],[171.0, 0.03, ',', 3],[185.0, 1, 'T', 3],[211.0, 63, 'K', 3],[300.0, 0.03, ',', 5],[323.0, 2, 'K', 5]

O3
###Collapse of ferromagnetism with Ti doping in Sm$_{0.55}$Sr$_{0.45}$MnO$_3$: A combined experimental and theoretical study|P. Sarkar,N. Khan,K. Pradhan,P. Mandal###
(1607117, 1607118)
 We have investigated the effect of Ti doping on the transport propertiescoupled with the magnetic ones inSm0.55Sr0.45Mn1-etaTietaO3 (0 leq eta leq 0.04).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 128, 'K', 1],[106.0, 22, 'K', 2],[168.0, 0.03, ',', 3],[182.0, 1, 'T', 3],[208.0, 63, 'K', 3],[297.0, 0.03, ',', 5],[320.0, 2, 'K', 5]

Sm0.55Sr0.45MnO3
###Collapse of ferromagnetism with Ti doping in Sm$_{0.55}$Sr$_{0.45}$MnO$_3$: A combined experimental and theoretical study|P. Sarkar,N. Khan,K. Pradhan,P. Mandal###
(1607141, 1607147)
The parent compound, Sm0.55Sr0.45MnO3, exhibits a first-orderparamagnetic-insulator to ferromagnetic-metal transition just below T<missing VAR>rm c<missing VAR> 128 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.09,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.11000000000000001,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 128, 'K', 0],[77.0, 22, 'K', 1],[139.0, 0.03, ',', 2],[153.0, 1, 'T', 2],[179.0, 63, 'K', 2],[268.0, 0.03, ',', 4],[291.0, 2, 'K', 4]

Ti
###Collapse of ferromagnetism with Ti doping in Sm$_{0.55}$Sr$_{0.45}$MnO$_3$: A combined experimental and theoretical study|P. Sarkar,N. Khan,K. Pradhan,P. Mandal###
(1607190, 1607190)
 With substitution of Ti at Mn sites (B-site), T<missing VAR>rm c<missing VAR> decreasesapproximately linearly at the rate of 22 K%-1 while the width of thermalhysteresis in magnetization and resistivity increases almost in an exponentialfashion.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 128, 'K', 1],[34.0, 22, 'K', 0],[96.0, 0.03, ',', 1],[110.0, 1, 'T', 1],[136.0, 63, 'K', 1],[225.0, 0.03, ',', 3],[248.0, 2, 'K', 3]

Mn
###Collapse of ferromagnetism with Ti doping in Sm$_{0.55}$Sr$_{0.45}$MnO$_3$: A combined experimental and theoretical study|P. Sarkar,N. Khan,K. Pradhan,P. Mandal###
(1607194, 1607194)
 With substitution of Ti at Mn sites (B-site), T<missing VAR>rm c<missing VAR> decreasesapproximately linearly at the rate of 22 K%-1 while the width of thermalhysteresis in magnetization and resistivity increases almost in an exponentialfashion.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 128, 'K', 1],[30.0, 22, 'K', 0],[92.0, 0.03, ',', 1],[106.0, 1, 'T', 1],[132.0, 63, 'K', 1],[221.0, 0.03, ',', 3],[244.0, 2, 'K', 3]

B
###Collapse of ferromagnetism with Ti doping in Sm$_{0.55}$Sr$_{0.45}$MnO$_3$: A combined experimental and theoretical study|P. Sarkar,N. Khan,K. Pradhan,P. Mandal###
(1607199, 1607199)
 With substitution of Ti at Mn sites (B-site), T<missing VAR>rm c<missing VAR> decreasesapproximately linearly at the rate of 22 K%-1 while the width of thermalhysteresis in magnetization and resistivity increases almost in an exponentialfashion.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 128, 'K', 1],[25.0, 22, 'K', 0],[87.0, 0.03, ',', 1],[101.0, 1, 'T', 1],[127.0, 63, 'K', 1],[216.0, 0.03, ',', 3],[239.0, 2, 'K', 3]

H
###Collapse of ferromagnetism with Ti doping in Sm$_{0.55}$Sr$_{0.45}$MnO$_3$: A combined experimental and theoretical study|P. Sarkar,N. Khan,K. Pradhan,P. Mandal###
(1607391, 1607391)
 With increasingmagnetic field, the transition shifts towards higher temperature, and thefirst-order nature of the transition gets weakened and eventually becomescrossover above a critical field (Hcr) which increases with Ti doping.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[210.0, 128, 'K', 3],[167.0, 22, 'K', 2],[105.0, 0.03, ',', 1],[91.0, 1, 'T', 1],[65.0, 63, 'K', 1],[24.0, 0.03, ',', 1],[47.0, 2, 'K', 1]

Ti
###Collapse of ferromagnetism with Ti doping in Sm$_{0.55}$Sr$_{0.45}$MnO$_3$: A combined experimental and theoretical study|P. Sarkar,N. Khan,K. Pradhan,P. Mandal###
(1607401, 1607401)
 With increasingmagnetic field, the transition shifts towards higher temperature, and thefirst-order nature of the transition gets weakened and eventually becomescrossover above a critical field (Hcr) which increases with Ti doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[220.0, 128, 'K', 3],[177.0, 22, 'K', 2],[115.0, 0.03, ',', 1],[101.0, 1, 'T', 1],[75.0, 63, 'K', 1],[14.0, 0.03, ',', 1],[37.0, 2, 'K', 1]

Ti
###Collapse of ferromagnetism with Ti doping in Sm$_{0.55}$Sr$_{0.45}$MnO$_3$: A combined experimental and theoretical study|P. Sarkar,N. Khan,K. Pradhan,P. Mandal###
(1607409, 1607409)
 ForTi doping above 0.03, the system remains insulting without any ferromagneticordering down to 2 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[228.0, 128, 'K', 4],[185.0, 22, 'K', 3],[123.0, 0.03, ',', 2],[109.0, 1, 'T', 2],[83.0, 63, 'K', 2],[6.0, 0.03, ',', 0],[29.0, 2, 'K', 0]

Ti
###Collapse of ferromagnetism with Ti doping in Sm$_{0.55}$Sr$_{0.45}$MnO$_3$: A combined experimental and theoretical study|P. Sarkar,N. Khan,K. Pradhan,P. Mandal###
(1607483, 1607483)
 The Monte-Carlo calculations based on a two-band doubleexchange model show that the decrease of T<missing VAR>rm c<missing VAR> with Ti doping isassociated with the increase of the lattice distortions around the doped Tiions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[302.0, 128, 'K', 5],[259.0, 22, 'K', 4],[197.0, 0.03, ',', 3],[183.0, 1, 'T', 3],[157.0, 63, 'K', 3],[68.0, 0.03, ',', 1],[45.0, 2, 'K', 1]

Ti
###Collapse of ferromagnetism with Ti doping in Sm$_{0.55}$Sr$_{0.45}$MnO$_3$: A combined experimental and theoretical study|P. Sarkar,N. Khan,K. Pradhan,P. Mandal###
(1607512, 1607512)
 The Monte-Carlo calculations based on a two-band doubleexchange model show that the decrease of T<missing VAR>rm c<missing VAR> with Ti doping isassociated with the increase of the lattice distortions around the doped Tiions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[331.0, 128, 'K', 5],[288.0, 22, 'K', 4],[226.0, 0.03, ',', 3],[212.0, 1, 'T', 3],[186.0, 63, 'K', 3],[97.0, 0.03, ',', 1],[74.0, 2, 'K', 1]

LaAs
###Extreme magnetoresistance in the topologically trivial lanthanum monopnictide LaAs|H. -Y. Yang,T. Nummy,H. Li,S. Jaszewski,M. Abramchuk,D. S. Dessau,Fazel Tafti###
(1607542, 1607543)
Extreme magnetoresistance in the topologically trivial lanthanum monopnictide LaAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaBi
###Extreme magnetoresistance in the topologically trivial lanthanum monopnictide LaAs|H. -Y. Yang,T. Nummy,H. Li,S. Jaszewski,M. Abramchuk,D. S. Dessau,Fazel Tafti###
(1607559, 1607560)
 The family of binary Lanthanum monopnictides, LaBi and LaSb, have attracted agreat deal of attention as they display an unusual extreme magnetoresistance(XMR) that is not well understood.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaSb
###Extreme magnetoresistance in the topologically trivial lanthanum monopnictide LaAs|H. -Y. Yang,T. Nummy,H. Li,S. Jaszewski,M. Abramchuk,D. S. Dessau,Fazel Tafti###
(1607564, 1607565)
 The family of binary Lanthanum monopnictides, LaBi and LaSb, have attracted agreat deal of attention as they display an unusual extreme magnetoresistance(XMR) that is not well understood.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaAs
###Extreme magnetoresistance in the topologically trivial lanthanum monopnictide LaAs|H. -Y. Yang,T. Nummy,H. Li,S. Jaszewski,M. Abramchuk,D. S. Dessau,Fazel Tafti###
(1607686, 1607687)
 Here, by synthesizing a new member of the family,LaAs, and performing transport measurements, Angle Resolved PhotoemissionSpectroscopy (ARPES), and Density Functional Theory (DFT) calculations, we showthat (a) LaAs retains all qualitative features characteristic of the XMR effectbut with a siginificant reduction in magnitude compared to LaSb and LaBi, (b)the absence of a band inversion or a Dirac cone in LaAs indicates that topologyis insignificant to XMR, (c) the equal number of electron and hole carriersindicates that compensation is necessary for XMR but does not explain itsmagnitude, and (d) the ratio of electron and hole mobilities is much differentin LaAs compared to LaSb and LaBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Extreme magnetoresistance in the topologically trivial lanthanum monopnictide LaAs|H. -Y. Yang,T. Nummy,H. Li,S. Jaszewski,M. Abramchuk,D. S. Dessau,Fazel Tafti###
(1607713, 1607713)
 Here, by synthesizing a new member of the family,LaAs, and performing transport measurements, Angle Resolved PhotoemissionSpectroscopy (ARPES), and Density Functional Theory (DFT) calculations, we showthat (a) LaAs retains all qualitative features characteristic of the XMR effectbut with a siginificant reduction in magnitude compared to LaSb and LaBi, (b)the absence of a band inversion or a Dirac cone in LaAs indicates that topologyis insignificant to XMR, (c) the equal number of electron and hole carriersindicates that compensation is necessary for XMR but does not explain itsmagnitude, and (d) the ratio of electron and hole mobilities is much differentin LaAs compared to LaSb and LaBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaAs
###Extreme magnetoresistance in the topologically trivial lanthanum monopnictide LaAs|H. -Y. Yang,T. Nummy,H. Li,S. Jaszewski,M. Abramchuk,D. S. Dessau,Fazel Tafti###
(1607745, 1607746)
 Here, by synthesizing a new member of the family,LaAs, and performing transport measurements, Angle Resolved PhotoemissionSpectroscopy (ARPES), and Density Functional Theory (DFT) calculations, we showthat (a) LaAs retains all qualitative features characteristic of the XMR effectbut with a siginificant reduction in magnitude compared to LaSb and LaBi, (b)the absence of a band inversion or a Dirac cone in LaAs indicates that topologyis insignificant to XMR, (c) the equal number of electron and hole carriersindicates that compensation is necessary for XMR but does not explain itsmagnitude, and (d) the ratio of electron and hole mobilities is much differentin LaAs compared to LaSb and LaBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaSb
###Extreme magnetoresistance in the topologically trivial lanthanum monopnictide LaAs|H. -Y. Yang,T. Nummy,H. Li,S. Jaszewski,M. Abramchuk,D. S. Dessau,Fazel Tafti###
(1607787, 1607788)
 Here, by synthesizing a new member of the family,LaAs, and performing transport measurements, Angle Resolved PhotoemissionSpectroscopy (ARPES), and Density Functional Theory (DFT) calculations, we showthat (a) LaAs retains all qualitative features characteristic of the XMR effectbut with a siginificant reduction in magnitude compared to LaSb and LaBi, (b)the absence of a band inversion or a Dirac cone in LaAs indicates that topologyis insignificant to XMR, (c) the equal number of electron and hole carriersindicates that compensation is necessary for XMR but does not explain itsmagnitude, and (d) the ratio of electron and hole mobilities is much differentin LaAs compared to LaSb and LaBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaBi
###Extreme magnetoresistance in the topologically trivial lanthanum monopnictide LaAs|H. -Y. Yang,T. Nummy,H. Li,S. Jaszewski,M. Abramchuk,D. S. Dessau,Fazel Tafti###
(1607792, 1607793)
 Here, by synthesizing a new member of the family,LaAs, and performing transport measurements, Angle Resolved PhotoemissionSpectroscopy (ARPES), and Density Functional Theory (DFT) calculations, we showthat (a) LaAs retains all qualitative features characteristic of the XMR effectbut with a siginificant reduction in magnitude compared to LaSb and LaBi, (b)the absence of a band inversion or a Dirac cone in LaAs indicates that topologyis insignificant to XMR, (c) the equal number of electron and hole carriersindicates that compensation is necessary for XMR but does not explain itsmagnitude, and (d) the ratio of electron and hole mobilities is much differentin LaAs compared to LaSb and LaBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaAs
###Extreme magnetoresistance in the topologically trivial lanthanum monopnictide LaAs|H. -Y. Yang,T. Nummy,H. Li,S. Jaszewski,M. Abramchuk,D. S. Dessau,Fazel Tafti###
(1607823, 1607824)
 Here, by synthesizing a new member of the family,LaAs, and performing transport measurements, Angle Resolved PhotoemissionSpectroscopy (ARPES), and Density Functional Theory (DFT) calculations, we showthat (a) LaAs retains all qualitative features characteristic of the XMR effectbut with a siginificant reduction in magnitude compared to LaSb and LaBi, (b)the absence of a band inversion or a Dirac cone in LaAs indicates that topologyis insignificant to XMR, (c) the equal number of electron and hole carriersindicates that compensation is necessary for XMR but does not explain itsmagnitude, and (d) the ratio of electron and hole mobilities is much differentin LaAs compared to LaSb and LaBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaAs
###Extreme magnetoresistance in the topologically trivial lanthanum monopnictide LaAs|H. -Y. Yang,T. Nummy,H. Li,S. Jaszewski,M. Abramchuk,D. S. Dessau,Fazel Tafti###
(1607924, 1607925)
 Here, by synthesizing a new member of the family,LaAs, and performing transport measurements, Angle Resolved PhotoemissionSpectroscopy (ARPES), and Density Functional Theory (DFT) calculations, we showthat (a) LaAs retains all qualitative features characteristic of the XMR effectbut with a siginificant reduction in magnitude compared to LaSb and LaBi, (b)the absence of a band inversion or a Dirac cone in LaAs indicates that topologyis insignificant to XMR, (c) the equal number of electron and hole carriersindicates that compensation is necessary for XMR but does not explain itsmagnitude, and (d) the ratio of electron and hole mobilities is much differentin LaAs compared to LaSb and LaBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaSb
###Extreme magnetoresistance in the topologically trivial lanthanum monopnictide LaAs|H. -Y. Yang,T. Nummy,H. Li,S. Jaszewski,M. Abramchuk,D. S. Dessau,Fazel Tafti###
(1607931, 1607932)
 Here, by synthesizing a new member of the family,LaAs, and performing transport measurements, Angle Resolved PhotoemissionSpectroscopy (ARPES), and Density Functional Theory (DFT) calculations, we showthat (a) LaAs retains all qualitative features characteristic of the XMR effectbut with a siginificant reduction in magnitude compared to LaSb and LaBi, (b)the absence of a band inversion or a Dirac cone in LaAs indicates that topologyis insignificant to XMR, (c) the equal number of electron and hole carriersindicates that compensation is necessary for XMR but does not explain itsmagnitude, and (d) the ratio of electron and hole mobilities is much differentin LaAs compared to LaSb and LaBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaBi
###Extreme magnetoresistance in the topologically trivial lanthanum monopnictide LaAs|H. -Y. Yang,T. Nummy,H. Li,S. Jaszewski,M. Abramchuk,D. S. Dessau,Fazel Tafti###
(1607936, 1607937)
 Here, by synthesizing a new member of the family,LaAs, and performing transport measurements, Angle Resolved PhotoemissionSpectroscopy (ARPES), and Density Functional Theory (DFT) calculations, we showthat (a) LaAs retains all qualitative features characteristic of the XMR effectbut with a siginificant reduction in magnitude compared to LaSb and LaBi, (b)the absence of a band inversion or a Dirac cone in LaAs indicates that topologyis insignificant to XMR, (c) the equal number of electron and hole carriersindicates that compensation is necessary for XMR but does not explain itsmagnitude, and (d) the ratio of electron and hole mobilities is much differentin LaAs compared to LaSb and LaBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Electrically induced and detected Néel vector reversal in a collinear antiferromagnet|J. Godinho,H. Reichlova,D. Kriegner,V. Novak,K. Olejnik,Z. Kaspar,Z. Soban,P Wadley,R. P. Campion,R. M. Otxoa,P. E. Roy,J. Zelezny,T. Jungwirth,J. Wunderlich###
(1608003, 1608003)
Electrically induced and detected Nel vector reversal in a collinear antiferromagnet.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 180, 'deg', 1],[190.0, 180, 'deg', 4],[452.0, 25, 'hour', 7]

H
###Electrically induced and detected Néel vector reversal in a collinear antiferromagnet|J. Godinho,H. Reichlova,D. Kriegner,V. Novak,K. Olejnik,Z. Kaspar,Z. Soban,P Wadley,R. P. Campion,R. M. Otxoa,P. E. Roy,J. Zelezny,T. Jungwirth,J. Wunderlich###
(1608124, 1608124)
 Anomalous Hall effect (AHE), which has beenrecently employed for spin reversal detection in non-collinearantiferromagnets, is limited to materials that crystalize in ferromagneticsymmetry groups.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 180, 'deg', 2],[69.0, 180, 'deg', 1],[331.0, 25, 'hour', 4]

N
###Electrically induced and detected Néel vector reversal in a collinear antiferromagnet|J. Godinho,H. Reichlova,D. Kriegner,V. Novak,K. Olejnik,Z. Kaspar,Z. Soban,P Wadley,R. P. Campion,R. M. Otxoa,P. E. Roy,J. Zelezny,T. Jungwirth,J. Wunderlich###
(1608195, 1608195)
 Here we demonstrate electrical detection of the 180 deg Neelvector reversal in CuMnAs which comprises two collinear spin sublattices andbelongs to an antiferromagnetic symmetry group with no net magnetic moment.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 180, 'deg', 3],[2.0, 180, 'deg', 0],[260.0, 25, 'hour', 3]

CuMnAs
###Electrically induced and detected Néel vector reversal in a collinear antiferromagnet|J. Godinho,H. Reichlova,D. Kriegner,V. Novak,K. Olejnik,Z. Kaspar,Z. Soban,P Wadley,R. P. Campion,R. M. Otxoa,P. E. Roy,J. Zelezny,T. Jungwirth,J. Wunderlich###
(1608205, 1608207)
 Here we demonstrate electrical detection of the 180 deg Neelvector reversal in CuMnAs which comprises two collinear spin sublattices andbelongs to an antiferromagnetic symmetry group with no net magnetic moment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 180, 'deg', 3],[12.0, 180, 'deg', 0],[248.0, 25, 'hour', 3]

CuMnAs
###Electrically induced and detected Néel vector reversal in a collinear antiferromagnet|J. Godinho,H. Reichlova,D. Kriegner,V. Novak,K. Olejnik,Z. Kaspar,Z. Soban,P Wadley,R. P. Campion,R. M. Otxoa,P. E. Roy,J. Zelezny,T. Jungwirth,J. Wunderlich###
(1608320, 1608322)
 The phenomenology of the non-linear transport effect we observe inCuMnAs is consistent with a microscopic scenario combining anisotropicmagneto-resistance (AMR) with a transient tilt of the Neel vector due to acurrent-induced, staggered spin-orbit field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[294.0, 180, 'deg', 5],[127.0, 180, 'deg', 2],[133.0, 25, 'hour', 1]

N
###Electrically induced and detected Néel vector reversal in a collinear antiferromagnet|J. Godinho,H. Reichlova,D. Kriegner,V. Novak,K. Olejnik,Z. Kaspar,Z. Soban,P Wadley,R. P. Campion,R. M. Otxoa,P. E. Roy,J. Zelezny,T. Jungwirth,J. Wunderlich###
(1608363, 1608363)
 The phenomenology of the non-linear transport effect we observe inCuMnAs is consistent with a microscopic scenario combining anisotropicmagneto-resistance (AMR) with a transient tilt of the Neel vector due to acurrent-induced, staggered spin-orbit field.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[337.0, 180, 'deg', 5],[170.0, 180, 'deg', 2],[92.0, 25, 'hour', 1]

F
###Role of external and internal perturbations on ferromagnetic phase transitions in manganites: Existence of tricritical points|Prabir K Mukherjee,Prosenjit Sarkar,Amit K Chattopadhyay###
(1608555, 1608555)
 A phenomenological mean-field theory is presented to describe the role ofexternal magnetic field, pressure and chemical substitution on the nature offerromagnetic (FM) to paramagnetic (PM) phase transition in manganites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Role of external and internal perturbations on ferromagnetic phase transitions in manganites: Existence of tricritical points|Prabir K Mukherjee,Prosenjit Sarkar,Amit K Chattopadhyay###
(1608564, 1608564)
 A phenomenological mean-field theory is presented to describe the role ofexternal magnetic field, pressure and chemical substitution on the nature offerromagnetic (FM) to paramagnetic (PM) phase transition in manganites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Role of external and internal perturbations on ferromagnetic phase transitions in manganites: Existence of tricritical points|Prabir K Mukherjee,Prosenjit Sarkar,Amit K Chattopadhyay###
(1608649, 1608649)
 Theapplication of external field (or pressure) shifts the transition, leading to afield (or pressure) dependent phase boundary along which a tricritical point isshown to exist where a first-order FM<missing VAR>-PM<missing VAR> transition becomes second-order.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Role of external and internal perturbations on ferromagnetic phase transitions in manganites: Existence of tricritical points|Prabir K Mukherjee,Prosenjit Sarkar,Amit K Chattopadhyay###
(1608652, 1608652)
 Theapplication of external field (or pressure) shifts the transition, leading to afield (or pressure) dependent phase boundary along which a tricritical point isshown to exist where a first-order FM<missing VAR>-PM<missing VAR> transition becomes second-order.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Role of external and internal perturbations on ferromagnetic phase transitions in manganites: Existence of tricritical points|Prabir K Mukherjee,Prosenjit Sarkar,Amit K Chattopadhyay###
(1608685, 1608685)
 Weshow that the effect of chemical substitution on the FM<missing VAR> transition is analogousto that of external perturbations (magnetic field and pressure); this includesthe existence of a tricritical point at which the order of transition changes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Role of external and internal perturbations on ferromagnetic phase transitions in manganites: Existence of tricritical points|Prabir K Mukherjee,Prosenjit Sarkar,Amit K Chattopadhyay###
(1608765, 1608765)
Our theoretical predictions satisfactorily explain the nature of FM<missing VAR>-PM<missing VAR>transition, observed in several systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Role of external and internal perturbations on ferromagnetic phase transitions in manganites: Existence of tricritical points|Prabir K Mukherjee,Prosenjit Sarkar,Amit K Chattopadhyay###
(1608768, 1608768)
Our theoretical predictions satisfactorily explain the nature of FM<missing VAR>-PM<missing VAR>transition, observed in several systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sm0.52Sr0.48MnO3
###Role of external and internal perturbations on ferromagnetic phase transitions in manganites: Existence of tricritical points|Prabir K Mukherjee,Prosenjit Sarkar,Amit K Chattopadhyay###
(1608830, 1608836)
 The modeling hypothesis has beencritically verified from our experimental data from a wide range of colossalmagnetoresistive manganite single crystals like Sm0.52Sr0.48MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.096,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.10400000000000001,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CsW2O6
###Electronic properties across metal-insulator transition in β-pyrochlore-type CsW2O6 epitaxial films|Takuto Soma,Kohei Yoshimatsu,Koji Horiba,Hiroshi Kumigashira,Akira Ohtomo###
(1608922, 1608926)
Electronic properties across metal-insulator transition in -pyrochlore-type CsW2O6 epitaxial films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 213, 'K', 1],[230.0, 200, 'K', 4],[258.0, 200, 'K', 5],[371.0, 4, 'f', 9],[423.0, 4, 'd', 10]

In
###Electronic properties across metal-insulator transition in β-pyrochlore-type CsW2O6 epitaxial films|Takuto Soma,Kohei Yoshimatsu,Koji Horiba,Hiroshi Kumigashira,Akira Ohtomo###
(1608933, 1608933)
 In CsW2O6, which undergoes a metal-insulator transition (MIT) at 213 K, theemergence of exotic properties associated with rattling motion of Cs isexpected owing to its characteristic beta-pyrochlore-type structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 213, 'K', 0],[223.0, 200, 'K', 3],[251.0, 200, 'K', 4],[364.0, 4, 'f', 8],[416.0, 4, 'd', 9]

CsW2O6
###Electronic properties across metal-insulator transition in β-pyrochlore-type CsW2O6 epitaxial films|Takuto Soma,Kohei Yoshimatsu,Koji Horiba,Hiroshi Kumigashira,Akira Ohtomo###
(1608935, 1608939)
 In CsW2O6, which undergoes a metal-insulator transition (MIT) at 213 K, theemergence of exotic properties associated with rattling motion of Cs isexpected owing to its characteristic beta-pyrochlore-type structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 213, 'K', 0],[217.0, 200, 'K', 3],[245.0, 200, 'K', 4],[358.0, 4, 'f', 8],[410.0, 4, 'd', 9]

Cs
###Electronic properties across metal-insulator transition in β-pyrochlore-type CsW2O6 epitaxial films|Takuto Soma,Kohei Yoshimatsu,Koji Horiba,Hiroshi Kumigashira,Akira Ohtomo###
(1608985, 1608985)
 In CsW2O6, which undergoes a metal-insulator transition (MIT) at 213 K, theemergence of exotic properties associated with rattling motion of Cs isexpected owing to its characteristic beta-pyrochlore-type structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 213, 'K', 0],[171.0, 200, 'K', 3],[199.0, 200, 'K', 4],[312.0, 4, 'f', 8],[364.0, 4, 'd', 9]

CsW2O6
###Electronic properties across metal-insulator transition in β-pyrochlore-type CsW2O6 epitaxial films|Takuto Soma,Kohei Yoshimatsu,Koji Horiba,Hiroshi Kumigashira,Akira Ohtomo###
(1609070, 1609074)
 Here we report on the epitaxial growth ofbeta-pyrochlore-type CsW2O6 films and their electronic properties across theMIT.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 213, 'K', 2],[82.0, 200, 'K', 1],[110.0, 200, 'K', 2],[223.0, 4, 'f', 6],[275.0, 4, 'd', 7]

CsW2O6
###Electronic properties across metal-insulator transition in β-pyrochlore-type CsW2O6 epitaxial films|Takuto Soma,Kohei Yoshimatsu,Koji Horiba,Hiroshi Kumigashira,Akira Ohtomo###
(1609118, 1609122)
 Using pulsed-laser deposi-tion technique, we grew single-crystallineCsW2O6 films exhibiting remarkably lower resistivity compared with apoly-crystalline bulk and sharp MIT around 200 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 213, 'K', 3],[34.0, 200, 'K', 0],[62.0, 200, 'K', 1],[175.0, 4, 'f', 5],[227.0, 4, 'd', 6]

In
###Electronic properties across metal-insulator transition in β-pyrochlore-type CsW2O6 epitaxial films|Takuto Soma,Kohei Yoshimatsu,Koji Horiba,Hiroshi Kumigashira,Akira Ohtomo###
(1609222, 1609222)
 In the valence band photoemission spectrum, the finitedensity of states was observed at the Fermi level in the metallic phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[261.0, 213, 'K', 6],[66.0, 200, 'K', 3],[38.0, 200, 'K', 2],[75.0, 4, 'f', 2],[127.0, 4, 'd', 3]

In
###Electronic properties across metal-insulator transition in β-pyrochlore-type CsW2O6 epitaxial films|Takuto Soma,Kohei Yoshimatsu,Koji Horiba,Hiroshi Kumigashira,Akira Ohtomo###
(1609267, 1609267)
 Incontrast, an energy gap appeared in the insulating phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[306.0, 213, 'K', 7],[111.0, 200, 'K', 4],[83.0, 200, 'K', 3],[30.0, 4, 'f', 1],[82.0, 4, 'd', 2]

W
###Electronic properties across metal-insulator transition in β-pyrochlore-type CsW2O6 epitaxial films|Takuto Soma,Kohei Yoshimatsu,Koji Horiba,Hiroshi Kumigashira,Akira Ohtomo###
(1609296, 1609296)
 The split of W 4fcore-level spectrum suggested the charge disproportionation of W5 and W6 inthe insulating phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[335.0, 213, 'K', 8],[140.0, 200, 'K', 5],[112.0, 200, 'K', 4],[1.0, 4, 'f', 0],[53.0, 4, 'd', 1]

W5
###Electronic properties across metal-insulator transition in β-pyrochlore-type CsW2O6 epitaxial films|Takuto Soma,Kohei Yoshimatsu,Koji Horiba,Hiroshi Kumigashira,Akira Ohtomo###
(1609316, 1609317)
 The split of W 4fcore-level spectrum suggested the charge disproportionation of W5 and W6 inthe insulating phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[355.0, 213, 'K', 8],[160.0, 200, 'K', 5],[132.0, 200, 'K', 4],[19.0, 4, 'f', 0],[32.0, 4, 'd', 1]

W6
###Electronic properties across metal-insulator transition in β-pyrochlore-type CsW2O6 epitaxial films|Takuto Soma,Kohei Yoshimatsu,Koji Horiba,Hiroshi Kumigashira,Akira Ohtomo###
(1609321, 1609322)
 The split of W 4fcore-level spectrum suggested the charge disproportionation of W5 and W6 inthe insulating phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[360.0, 213, 'K', 8],[165.0, 200, 'K', 5],[137.0, 200, 'K', 4],[24.0, 4, 'f', 0],[27.0, 4, 'd', 1]

Cs
###Electronic properties across metal-insulator transition in β-pyrochlore-type CsW2O6 epitaxial films|Takuto Soma,Kohei Yoshimatsu,Koji Horiba,Hiroshi Kumigashira,Akira Ohtomo###
(1609348, 1609348)
 The change of spectral shape in the Cs 4d core levelsreflected the rattling motion of Cs cations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[387.0, 213, 'K', 9],[192.0, 200, 'K', 6],[164.0, 200, 'K', 5],[51.0, 4, 'f', 1],[1.0, 4, 'd', 0]

Cs
###Electronic properties across metal-insulator transition in β-pyrochlore-type CsW2O6 epitaxial films|Takuto Soma,Kohei Yoshimatsu,Koji Horiba,Hiroshi Kumigashira,Akira Ohtomo###
(1609366, 1609366)
 The change of spectral shape in the Cs 4d core levelsreflected the rattling motion of Cs cations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[405.0, 213, 'K', 9],[210.0, 200, 'K', 6],[182.0, 200, 'K', 5],[69.0, 4, 'f', 1],[17.0, 4, 'd', 0]

CsW2O6
###Electronic properties across metal-insulator transition in β-pyrochlore-type CsW2O6 epitaxial films|Takuto Soma,Kohei Yoshimatsu,Koji Horiba,Hiroshi Kumigashira,Akira Ohtomo###
(1609382, 1609386)
 These results strongly suggestthat CsW2O6 is a novel material, in which MIT is driven by the chargedisproportionation associated with the rattling motion.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[421.0, 213, 'K', 10],[226.0, 200, 'K', 7],[198.0, 200, 'K', 6],[85.0, 4, 'f', 2],[33.0, 4, 'd', 1]

LaNiO3
###Tunable disorder and localization in the rare-earth nickelates|Changan Wang,Ching-Hao Chang,Angus Huang,Pei-Chun Wang,Ping-Chun Wu,Lin Yang,Chi Xu,Parul Pandey,Min Zeng,Roman Böttger,Horng-Tay Jeng,Yu-Jia Zeng,Manfred Helm,Ying-Hao Chu,R. Ganesh,Shengqiang Zhou###
(1609523, 1609526)
 We report a study of transport in LaNiO3 in thepresence of tunable disorder induced by irradiation.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaNiO3
###Tunable disorder and localization in the rare-earth nickelates|Changan Wang,Ching-Hao Chang,Angus Huang,Pei-Chun Wang,Ping-Chun Wu,Lin Yang,Chi Xu,Parul Pandey,Min Zeng,Roman Böttger,Horng-Tay Jeng,Yu-Jia Zeng,Manfred Helm,Ying-Hao Chu,R. Ganesh,Shengqiang Zhou###
(1609552, 1609555)
 While pristine LaNiO3samples are metallic, highly irradiated samples show insulating behaviour atall temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Tunable disorder and localization in the rare-earth nickelates|Changan Wang,Ching-Hao Chang,Angus Huang,Pei-Chun Wang,Ping-Chun Wu,Lin Yang,Chi Xu,Parul Pandey,Min Zeng,Roman Böttger,Horng-Tay Jeng,Yu-Jia Zeng,Manfred Helm,Ying-Hao Chu,R. Ganesh,Shengqiang Zhou###
(1609663, 1609663)
 In the high temperature metallic regime, we find a transitionfrom non-Fermi liquid to a Fermi-liquid-like character.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Tunable disorder and localization in the rare-earth nickelates|Changan Wang,Ching-Hao Chang,Angus Huang,Pei-Chun Wang,Ping-Chun Wu,Lin Yang,Chi Xu,Parul Pandey,Min Zeng,Roman Böttger,Horng-Tay Jeng,Yu-Jia Zeng,Manfred Helm,Ying-Hao Chu,R. Ganesh,Shengqiang Zhou###
(1609780, 1609780)
 In the highly irradiated insulatingsamples, we find good agreement with variable range hopping, consistent withAnderson localization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PrNiO3
###Tunable disorder and localization in the rare-earth nickelates|Changan Wang,Ching-Hao Chang,Angus Huang,Pei-Chun Wang,Ping-Chun Wu,Lin Yang,Chi Xu,Parul Pandey,Min Zeng,Roman Böttger,Horng-Tay Jeng,Yu-Jia Zeng,Manfred Helm,Ying-Hao Chu,R. Ganesh,Shengqiang Zhou###
(1609835, 1609838)
 We find qualitatively similar behaviour in thick PrNiO3films as well.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YBa2Cu3O7
###Unconventional critical state in YBa$_{2}$Cu$_{3}$O$_{7-δ}$ thin films with a vortex-pin lattice fabricated by masked He$^+$ ion beam irradiation|Georg Zechner,Kristijan L. Mletschnig,Wolfgang Lang,Meirzhan Dosmailov,Marius A. Bodea,Johannes D. Pedarnig###
(1609914, 1609920)
Unconventional critical state in YBa2Cu3O7- thin films with a vortex-pin lattice fabricated by masked He ion beam irradiation.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5384615384615384,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23076923076923078,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15384615384615385,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 180, 'nm', 1],[85.0, 300, 'nm', 1],[101.0, 75, 'keV', 2]

He
###Unconventional critical state in YBa$_{2}$Cu$_{3}$O$_{7-δ}$ thin films with a vortex-pin lattice fabricated by masked He$^+$ ion beam irradiation|Georg Zechner,Kristijan L. Mletschnig,Wolfgang Lang,Meirzhan Dosmailov,Marius A. Bodea,Johannes D. Pedarnig###
(1609943, 1609943)
Unconventional critical state in YBa2Cu3O7- thin films with a vortex-pin lattice fabricated by masked He ion beam irradiation.
Featurization terminated normally.
0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 180, 'nm', 1],[62.0, 300, 'nm', 1],[78.0, 75, 'keV', 2]

YBa2Cu3O7
###Unconventional critical state in YBa$_{2}$Cu$_{3}$O$_{7-δ}$ thin films with a vortex-pin lattice fabricated by masked He$^+$ ion beam irradiation|Georg Zechner,Kristijan L. Mletschnig,Wolfgang Lang,Meirzhan Dosmailov,Marius A. Bodea,Johannes D. Pedarnig###
(1609956, 1609962)
 Thin superconducting YBa2Cu3O7-delta films are patterned witha vortex-pin lattice consisting of columnar defect regions (CDs) with 180 nmdiameter and 300 nm spacing.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5384615384615384,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23076923076923078,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15384615384615385,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 180, 'nm', 0],[43.0, 300, 'nm', 0],[59.0, 75, 'keV', 1]

(CDs)
###Unconventional critical state in YBa$_{2}$Cu$_{3}$O$_{7-δ}$ thin films with a vortex-pin lattice fabricated by masked He$^+$ ion beam irradiation|Georg Zechner,Kristijan L. Mletschnig,Wolfgang Lang,Meirzhan Dosmailov,Marius A. Bodea,Johannes D. Pedarnig###
(1609993, 1609996)
 Thin superconducting YBa2Cu3O7-delta films are patterned witha vortex-pin lattice consisting of columnar defect regions (CDs) with 180 nmdiameter and 300 nm spacing.
EXCEPTION: IndexError for (CDs)
He
[3.0, 180, 'nm', 0],[9.0, 300, 'nm', 0],[25.0, 75, 'keV', 1]

II
###Planar Hall effect in type II Dirac semimetal VAl$_{3}$|Ratnadwip Singha,Shubhankar Roy,Arnab Pariari,Biswarup Satpati,Prabhat Mandal###
(1610394, 1610395)
Planar Hall effect in type II Dirac semimetal VAl3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

VAl3
###Planar Hall effect in type II Dirac semimetal VAl$_{3}$|Ratnadwip Singha,Shubhankar Roy,Arnab Pariari,Biswarup Satpati,Prabhat Mandal###
(1610401, 1610403)
Planar Hall effect in type II Dirac semimetal VAl3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

VAl3
###Planar Hall effect in type II Dirac semimetal VAl$_{3}$|Ratnadwip Singha,Shubhankar Roy,Arnab Pariari,Biswarup Satpati,Prabhat Mandal###
(1610577, 1610579)
 From band structurecalculations, VAl3 has been proposed to be a type II topological Diracsemimetal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Planar Hall effect in type II Dirac semimetal VAl$_{3}$|Ratnadwip Singha,Shubhankar Roy,Arnab Pariari,Biswarup Satpati,Prabhat Mandal###
(1610595, 1610596)
 From band structurecalculations, VAl3 has been proposed to be a type II topological Diracsemimetal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Planar Hall effect in type II Dirac semimetal VAl$_{3}$|Ratnadwip Singha,Shubhankar Roy,Arnab Pariari,Biswarup Satpati,Prabhat Mandal###
(1610672, 1610672)
 In this work, wepresent a detailed analysis on the magnetotransport properties of VAl3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

VAl3
###Planar Hall effect in type II Dirac semimetal VAl$_{3}$|Ratnadwip Singha,Shubhankar Roy,Arnab Pariari,Biswarup Satpati,Prabhat Mandal###
(1610700, 1610702)
 In this work, wepresent a detailed analysis on the magnetotransport properties of VAl3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

VAl3
###Planar Hall effect in type II Dirac semimetal VAl$_{3}$|Ratnadwip Singha,Shubhankar Roy,Arnab Pariari,Biswarup Satpati,Prabhat Mandal###
(1610855, 1610857)
 This phenomenon originatesfrom the relativistic chiral anomaly and non-trivial Berry curvature, whichvalidates the theoretical prediction of the Dirac semimetal phase in VAl3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu0.95MnAs
###Spin-flop phase transition in the orthorhombic antiferromagnetic topological semimetal Cu0.95MnAs|Eve Emmanouilidou,Jinyu Liu,David Graf,Huibo Cao,Ni Ni###
(1610888, 1610891)
Spin-flop phase transition in the orthorhombic antiferromagnetic topological semimetal Cu0.95MnAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3389830508474576,0,0,0,0.3220338983050847,0,0,0,0.3389830508474576,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CuMnAs
###Spin-flop phase transition in the orthorhombic antiferromagnetic topological semimetal Cu0.95MnAs|Eve Emmanouilidou,Jinyu Liu,David Graf,Huibo Cao,Ni Ni###
(1610902, 1610904)
 The orthorhombic antiferromagnetic compound CuMnAs was recently predicted tobe an antiferromagnetic Dirac semimetal if both the Ry gliding and S2z<missing VAR>rotational symmetries are preserved in its magnetic ordered state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S2
###Spin-flop phase transition in the orthorhombic antiferromagnetic topological semimetal Cu0.95MnAs|Eve Emmanouilidou,Jinyu Liu,David Graf,Huibo Cao,Ni Ni###
(1610937, 1610938)
 The orthorhombic antiferromagnetic compound CuMnAs was recently predicted tobe an antiferromagnetic Dirac semimetal if both the Ry gliding and S2z<missing VAR>rotational symmetries are preserved in its magnetic ordered state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin-flop phase transition in the orthorhombic antiferromagnetic topological semimetal Cu0.95MnAs|Eve Emmanouilidou,Jinyu Liu,David Graf,Huibo Cao,Ni Ni###
(1610961, 1610961)
 In ourprevious work on Cu0.95MnAs and Cu0.98Mn0.96As, we showed that in their lowtemperature commensurate antiferromagnetic state the b<missing VAR> axis is the magneticeasy axis, which breaks the S2z<missing VAR> symmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu0.95MnAs
###Spin-flop phase transition in the orthorhombic antiferromagnetic topological semimetal Cu0.95MnAs|Eve Emmanouilidou,Jinyu Liu,David Graf,Huibo Cao,Ni Ni###
(1610972, 1610975)
 In ourprevious work on Cu0.95MnAs and Cu0.98Mn0.96As, we showed that in their lowtemperature commensurate antiferromagnetic state the b<missing VAR> axis is the magneticeasy axis, which breaks the S2z<missing VAR> symmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3389830508474576,0,0,0,0.3220338983050847,0,0,0,0.3389830508474576,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu0.98Mn0.96As
###Spin-flop phase transition in the orthorhombic antiferromagnetic topological semimetal Cu0.95MnAs|Eve Emmanouilidou,Jinyu Liu,David Graf,Huibo Cao,Ni Ni###
(1610979, 1610983)
 In ourprevious work on Cu0.95MnAs and Cu0.98Mn0.96As, we showed that in their lowtemperature commensurate antiferromagnetic state the b<missing VAR> axis is the magneticeasy axis, which breaks the S2z<missing VAR> symmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.32653061224489793,0,0,0,0.3333333333333333,0,0,0,0.3401360544217687,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S2
###Spin-flop phase transition in the orthorhombic antiferromagnetic topological semimetal Cu0.95MnAs|Eve Emmanouilidou,Jinyu Liu,David Graf,Huibo Cao,Ni Ni###
(1611031, 1611032)
 In ourprevious work on Cu0.95MnAs and Cu0.98Mn0.96As, we showed that in their lowtemperature commensurate antiferromagnetic state the b<missing VAR> axis is the magneticeasy axis, which breaks the S2z<missing VAR> symmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Spin-flop phase transition in the orthorhombic antiferromagnetic topological semimetal Cu0.95MnAs|Eve Emmanouilidou,Jinyu Liu,David Graf,Huibo Cao,Ni Ni###
(1611038, 1611038)
 As a result, while the existence ofDirac fermions is no longer protected, the polarized surface state makes thismaterial potentially interesting for antiferromagnetic spintronics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin-flop phase transition in the orthorhombic antiferromagnetic topological semimetal Cu0.95MnAs|Eve Emmanouilidou,Jinyu Liu,David Graf,Huibo Cao,Ni Ni###
(1611093, 1611093)
 In thispaper, we report a detailed study of the anisotropic magnetic properties andmagnetoresistance of Cu0.95MnAs and Cu0.98Mn0.96As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu0.95MnAs
###Spin-flop phase transition in the orthorhombic antiferromagnetic topological semimetal Cu0.95MnAs|Eve Emmanouilidou,Jinyu Liu,David Graf,Huibo Cao,Ni Ni###
(1611128, 1611131)
 In thispaper, we report a detailed study of the anisotropic magnetic properties andmagnetoresistance of Cu0.95MnAs and Cu0.98Mn0.96As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3389830508474576,0,0,0,0.3220338983050847,0,0,0,0.3389830508474576,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu0.98Mn0.96As
###Spin-flop phase transition in the orthorhombic antiferromagnetic topological semimetal Cu0.95MnAs|Eve Emmanouilidou,Jinyu Liu,David Graf,Huibo Cao,Ni Ni###
(1611135, 1611139)
 In thispaper, we report a detailed study of the anisotropic magnetic properties andmagnetoresistance of Cu0.95MnAs and Cu0.98Mn0.96As.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.32653061224489793,0,0,0,0.3333333333333333,0,0,0,0.3401360544217687,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu0.95MnAs
###Spin-flop phase transition in the orthorhombic antiferromagnetic topological semimetal Cu0.95MnAs|Eve Emmanouilidou,Jinyu Liu,David Graf,Huibo Cao,Ni Ni###
(1611153, 1611156)
 Our study shows that inCu0.95MnAs the b<missing VAR> axis is the easy axis and the c<missing VAR> axis is the hard axis.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3389830508474576,0,0,0,0.3220338983050847,0,0,0,0.3389830508474576,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu0.95MnAs
###Spin-flop phase transition in the orthorhombic antiferromagnetic topological semimetal Cu0.95MnAs|Eve Emmanouilidou,Jinyu Liu,David Graf,Huibo Cao,Ni Ni###
(1611199, 1611202)
Furthermore, it reveals that Cu0.95MnAs features a spin-flop phase transitionat high temperatures and low fields when the field is applied along the easy b<missing VAR>axis, resulting in canted antiferromagnetism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3389830508474576,0,0,0,0.3220338983050847,0,0,0,0.3389830508474576,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu0.98Mn0.96As
###Spin-flop phase transition in the orthorhombic antiferromagnetic topological semimetal Cu0.95MnAs|Eve Emmanouilidou,Jinyu Liu,David Graf,Huibo Cao,Ni Ni###
(1611276, 1611280)
 However, no metamagnetictransition is observed in Cu0.98Mn0.96As, indicating that the magneticinteractions in this system are very sensitive to Cu vacancies and Cu/Mn sitemixing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.32653061224489793,0,0,0,0.3333333333333333,0,0,0,0.3401360544217687,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Spin-flop phase transition in the orthorhombic antiferromagnetic topological semimetal Cu0.95MnAs|Eve Emmanouilidou,Jinyu Liu,David Graf,Huibo Cao,Ni Ni###
(1611308, 1611308)
 However, no metamagnetictransition is observed in Cu0.98Mn0.96As, indicating that the magneticinteractions in this system are very sensitive to Cu vacancies and Cu/Mn sitemixing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu/Mn
###Spin-flop phase transition in the orthorhombic antiferromagnetic topological semimetal Cu0.95MnAs|Eve Emmanouilidou,Jinyu Liu,David Graf,Huibo Cao,Ni Ni###
(1611314, 1611316)
 However, no metamagnetictransition is observed in Cu0.98Mn0.96As, indicating that the magneticinteractions in this system are very sensitive to Cu vacancies and Cu/Mn sitemixing.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

S
###Two-terminal spin-orbit torque magnetoresistive random access memory|Noriyuki Sato,Fen Xue,Robert M. White,Chong Bi,Shan X. Wang###
(1611366, 1611366)
 Spin-transfer torque magnetoresistive random access memory (STT-MRAM) is anattractive alternative to current random access memory technologies due to itsnon-volatility, fast operation and high endurance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[453.0, 70, '%', 6]

S
###Two-terminal spin-orbit torque magnetoresistive random access memory|Noriyuki Sato,Fen Xue,Robert M. White,Chong Bi,Shan X. Wang###
(1611420, 1611420)
 STT-MRAM<missing VAR> does though havelimitations including the stochastic nature of the STT-switching and a highcritical switching current, which makes it unsuitable for ultrafast operationat nanosecond and sub-nanosecond regimes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[399.0, 70, '%', 5]

S
###Two-terminal spin-orbit torque magnetoresistive random access memory|Noriyuki Sato,Fen Xue,Robert M. White,Chong Bi,Shan X. Wang###
(1611450, 1611450)
 STT-MRAM<missing VAR> does though havelimitations including the stochastic nature of the STT-switching and a highcritical switching current, which makes it unsuitable for ultrafast operationat nanosecond and sub-nanosecond regimes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[369.0, 70, '%', 5]

SO
###Two-terminal spin-orbit torque magnetoresistive random access memory|Noriyuki Sato,Fen Xue,Robert M. White,Chong Bi,Shan X. Wang###
(1611505, 1611506)
 Spin-orbit torque (SOT) switching,which relies on the torque generated by an in-plane current, has the potentialto overcome these limitations.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[313.0, 70, '%', 4]

SO
###Two-terminal spin-orbit torque magnetoresistive random access memory|Noriyuki Sato,Fen Xue,Robert M. White,Chong Bi,Shan X. Wang###
(1611556, 1611557)
 However, SOT-MRAM<missing VAR> cells studied so far use athree-terminal structure in order to apply the in-plane current, whichincreases the size of the cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[262.0, 70, '%', 3]

SO
###Two-terminal spin-orbit torque magnetoresistive random access memory|Noriyuki Sato,Fen Xue,Robert M. White,Chong Bi,Shan X. Wang###
(1611629, 1611630)
 Here we report a two-terminal SOT-MRAM<missing VAR> cellbased on a CoFeB/MgO magnetic tunnel junction pillar on an ultrathin and narrowTa underlayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[189.0, 70, '%', 2]

CoFeB/MgO
###Two-terminal spin-orbit torque magnetoresistive random access memory|Noriyuki Sato,Fen Xue,Robert M. White,Chong Bi,Shan X. Wang###
(1611647, 1611652)
 Here we report a two-terminal SOT-MRAM<missing VAR> cellbased on a CoFeB/MgO magnetic tunnel junction pillar on an ultrathin and narrowTa underlayer.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[167.0, 70, '%', 2]

Ta
###Two-terminal spin-orbit torque magnetoresistive random access memory|Noriyuki Sato,Fen Xue,Robert M. White,Chong Bi,Shan X. Wang###
(1611673, 1611673)
 Here we report a two-terminal SOT-MRAM<missing VAR> cellbased on a CoFeB/MgO magnetic tunnel junction pillar on an ultrathin and narrowTa underlayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 70, '%', 2]

In
###Two-terminal spin-orbit torque magnetoresistive random access memory|Noriyuki Sato,Fen Xue,Robert M. White,Chong Bi,Shan X. Wang###
(1611678, 1611678)
 In this device, an in-plane and out-of-plane current aresimultaneously generated upon application of a voltage, and we demonstrate thatthe switching mechanism is dominated by SOT<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 70, '%', 1]

SO
###Two-terminal spin-orbit torque magnetoresistive random access memory|Noriyuki Sato,Fen Xue,Robert M. White,Chong Bi,Shan X. Wang###
(1611740, 1611741)
 In this device, an in-plane and out-of-plane current aresimultaneously generated upon application of a voltage, and we demonstrate thatthe switching mechanism is dominated by SOT<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 70, '%', 1]

S
###Two-terminal spin-orbit torque magnetoresistive random access memory|Noriyuki Sato,Fen Xue,Robert M. White,Chong Bi,Shan X. Wang###
(1611760, 1611760)
 We also compare our device to aSTT-MRAM<missing VAR> cell built with the same architecture and show that critical writecurrent in the SOT-MRAM<missing VAR> cell is reduced by more than 70%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 70, '%', 0]

SO
###Two-terminal spin-orbit torque magnetoresistive random access memory|Noriyuki Sato,Fen Xue,Robert M. White,Chong Bi,Shan X. Wang###
(1611798, 1611799)
 We also compare our device to aSTT-MRAM<missing VAR> cell built with the same architecture and show that critical writecurrent in the SOT-MRAM<missing VAR> cell is reduced by more than 70%.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 70, '%', 0]

In
###Chaos and relaxation oscillations in spin-torque windmill neurons|Rie Matsumoto,Steven Lequeux,Hiroshi Imamura,Julie Grollier###
(1611901, 1611901)
 In many neuroscience and computer science models,neurons are abstracted as non-linear oscillators.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GdPtBi
###Anisotropic electrical and thermal magnetotransport in the magnetic semimetal GdPtBi|Clemens Schindler,Stanislaw Galeski,Walter Schnelle,Rafał Wawrzyńczak,Wajdi Abdel-Haq,Satya N. Guin,Johannes Kroder,Nitesh Kumar,Chenguang Fu,Horst Borrmann,Chandra Shekhar,Claudia Felser,Tobias Meng,Adolfo G. Grushin,Yang Zhang,Yan Sun,Johannes Gooth###
(1612369, 1612371)
Anisotropic electrical and thermal magnetotransport in the magnetic semimetal GdPtBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GdPtBi
###Anisotropic electrical and thermal magnetotransport in the magnetic semimetal GdPtBi|Clemens Schindler,Stanislaw Galeski,Walter Schnelle,Rafał Wawrzyńczak,Wajdi Abdel-Haq,Satya N. Guin,Johannes Kroder,Nitesh Kumar,Chenguang Fu,Horst Borrmann,Chandra Shekhar,Claudia Felser,Tobias Meng,Adolfo G. Grushin,Yang Zhang,Yan Sun,Johannes Gooth###
(1612386, 1612388)
 The half-Heusler rare-earth intermetallic GdPtBi has recently gainedattention due to peculiar magnetotransport phenomena that have been associatedwith the possible existence of Weyl fermions, thought to arise from thecrossings of spin-split conduction and valence bands.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Anisotropic electrical and thermal magnetotransport in the magnetic semimetal GdPtBi|Clemens Schindler,Stanislaw Galeski,Walter Schnelle,Rafał Wawrzyńczak,Wajdi Abdel-Haq,Satya N. Guin,Johannes Kroder,Nitesh Kumar,Chenguang Fu,Horst Borrmann,Chandra Shekhar,Claudia Felser,Tobias Meng,Adolfo G. Grushin,Yang Zhang,Yan Sun,Johannes Gooth###
(1612542, 1612542)
 In order to address the origin of the magnetotransport phenomena inGdPtBi, we performed a comprehensive study of the magnetization, electrical andthermal magnetoresistivity on two single-crystalline GdPtBi samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GdPtBi
###Anisotropic electrical and thermal magnetotransport in the magnetic semimetal GdPtBi|Clemens Schindler,Stanislaw Galeski,Walter Schnelle,Rafał Wawrzyńczak,Wajdi Abdel-Haq,Satya N. Guin,Johannes Kroder,Nitesh Kumar,Chenguang Fu,Horst Borrmann,Chandra Shekhar,Claudia Felser,Tobias Meng,Adolfo G. Grushin,Yang Zhang,Yan Sun,Johannes Gooth###
(1612565, 1612567)
 In order to address the origin of the magnetotransport phenomena inGdPtBi, we performed a comprehensive study of the magnetization, electrical andthermal magnetoresistivity on two single-crystalline GdPtBi samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GdPtBi
###Anisotropic electrical and thermal magnetotransport in the magnetic semimetal GdPtBi|Clemens Schindler,Stanislaw Galeski,Walter Schnelle,Rafał Wawrzyńczak,Wajdi Abdel-Haq,Satya N. Guin,Johannes Kroder,Nitesh Kumar,Chenguang Fu,Horst Borrmann,Chandra Shekhar,Claudia Felser,Tobias Meng,Adolfo G. Grushin,Yang Zhang,Yan Sun,Johannes Gooth###
(1612604, 1612606)
 In order to address the origin of the magnetotransport phenomena inGdPtBi, we performed a comprehensive study of the magnetization, electrical andthermal magnetoresistivity on two single-crystalline GdPtBi samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Anisotropic electrical and thermal magnetotransport in the magnetic semimetal GdPtBi|Clemens Schindler,Stanislaw Galeski,Walter Schnelle,Rafał Wawrzyńczak,Wajdi Abdel-Haq,Satya N. Guin,Johannes Kroder,Nitesh Kumar,Chenguang Fu,Horst Borrmann,Chandra Shekhar,Claudia Felser,Tobias Meng,Adolfo G. Grushin,Yang Zhang,Yan Sun,Johannes Gooth###
(1612611, 1612611)
 Inaddition, we performed an analysis of the Fermi surface via Shubnikov-de Haasoscillations in one of the samples and compared the results to emphab initioband structure calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GdPtBi
###Anisotropic electrical and thermal magnetotransport in the magnetic semimetal GdPtBi|Clemens Schindler,Stanislaw Galeski,Walter Schnelle,Rafał Wawrzyńczak,Wajdi Abdel-Haq,Satya N. Guin,Johannes Kroder,Nitesh Kumar,Chenguang Fu,Horst Borrmann,Chandra Shekhar,Claudia Felser,Tobias Meng,Adolfo G. Grushin,Yang Zhang,Yan Sun,Johannes Gooth###
(1612698, 1612700)
 Our findings indicate that the electrical andthermal magnetotransport in GdPtBi cannot be solely explained by Weyl physicsand is strongly influenced by the interaction of both itinerant charge carriersand phonons with localized magnetic Gd-ions and possibly also paramagneticimpurities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Gd
###Anisotropic electrical and thermal magnetotransport in the magnetic semimetal GdPtBi|Clemens Schindler,Stanislaw Galeski,Walter Schnelle,Rafał Wawrzyńczak,Wajdi Abdel-Haq,Satya N. Guin,Johannes Kroder,Nitesh Kumar,Chenguang Fu,Horst Borrmann,Chandra Shekhar,Claudia Felser,Tobias Meng,Adolfo G. Grushin,Yang Zhang,Yan Sun,Johannes Gooth###
(1612752, 1612752)
 Our findings indicate that the electrical andthermal magnetotransport in GdPtBi cannot be solely explained by Weyl physicsand is strongly influenced by the interaction of both itinerant charge carriersand phonons with localized magnetic Gd-ions and possibly also paramagneticimpurities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

US
###Magnon contribution to unidirectional spin Hall magnetoresistance|W. P. Sterk,D. Peerlings,R. A. Duine###
(1612821, 1612822)
 We develop a model for the magnonic contribution to the unidirectional spinHall magnetoresistance (USMR) of heavy metal/ferromagnetic insulator bilayerfilms.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
[122.0, 94, ',', 4],[284.0, -8, ',', 6]

B
###Magnon contribution to unidirectional spin Hall magnetoresistance|W. P. Sterk,D. Peerlings,R. A. Duine###
(1612942, 1612942)
 B 94, 140411 (2016)], which requires an electrically conductiveferromagnet, the magnonic contribution can occur in ferromagnetic insulatorssuch as yttrium iron garnet.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 94, ',', 0],[164.0, -8, ',', 2]

US
###Magnon contribution to unidirectional spin Hall magnetoresistance|W. P. Sterk,D. Peerlings,R. A. Duine###
(1613007, 1613008)
 We show that the magnonic USMR is, to leadingorder, cubic in the spin Hall angle of the heavy metal, as opposed to thelinear relation found for the electronic contribution.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
[63.0, 94, ',', 1],[98.0, -8, ',', 1]

US
###Magnon contribution to unidirectional spin Hall magnetoresistance|W. P. Sterk,D. Peerlings,R. A. Duine###
(1613081, 1613082)
 We estimate that themaximal magnonic USMR in PtYIG<missing VAR> bilayers is on the order of 10-8, but mayreach values of up to 10-5 if the magnon gap is suppressed, and can thusbecome comparable to the electronic contribution in, e.g.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
[137.0, 94, ',', 2],[24.0, -8, ',', 0]

PtYI
###Magnon contribution to unidirectional spin Hall magnetoresistance|W. P. Sterk,D. Peerlings,R. A. Duine###
(1613088, 1613090)
 We estimate that themaximal magnonic USMR in PtYIG<missing VAR> bilayers is on the order of 10-8, but mayreach values of up to 10-5 if the magnon gap is suppressed, and can thusbecome comparable to the electronic contribution in, e.g.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 94, ',', 2],[16.0, -8, ',', 0]

PtCo
###Magnon contribution to unidirectional spin Hall magnetoresistance|W. P. Sterk,D. Peerlings,R. A. Duine###
(1613170, 1613171)
, PtCo.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[226.0, 94, ',', 3],[64.0, -8, ',', 1]

US
###Magnon contribution to unidirectional spin Hall magnetoresistance|W. P. Sterk,D. Peerlings,R. A. Duine###
(1613185, 1613186)
 We show thatthe magnonic USMR at a finite magnon gap may be enhanced by an order ofmagnitude if the magnon diffusion length is decreased to a specific optimalvalue that depends on various system parameters.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
[241.0, 94, ',', 4],[79.0, -8, ',', 2]

P
###Correlation between scale-invariant normal state resistivity and superconductivity in an electron-doped cuprate|Tarapada Sarkar,P. R. Mandal,N. R. Poniatowski,M. K. Chan,Richard L. Greene###
(1613391, 1613391)
 This so-called strange metalstate is thought to be associated with a quantum critical point (Q<missing VAR>CP) hiddenbeneath the superconductivity(1,2).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 1, ',', 0],[106.0, 3, ',', 1]

In
###Correlation between scale-invariant normal state resistivity and superconductivity in an electron-doped cuprate|Tarapada Sarkar,P. R. Mandal,N. R. Poniatowski,M. K. Chan,Richard L. Greene###
(1613409, 1613409)
 In electron-doped cuprates in contrast tohole-doped cuprates it is possible to access the normal state at very lowtemperatures and low magnetic fields to study this putative Q<missing VAR>CP and to probethe T<missing VAR>0 K state of these materials(3,4).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 1, ',', 1],[88.0, 3, ',', 0]

CP
###Correlation between scale-invariant normal state resistivity and superconductivity in an electron-doped cuprate|Tarapada Sarkar,P. R. Mandal,N. R. Poniatowski,M. K. Chan,Richard L. Greene###
(1613472, 1613473)
 In electron-doped cuprates in contrast tohole-doped cuprates it is possible to access the normal state at very lowtemperatures and low magnetic fields to study this putative Q<missing VAR>CP and to probethe T<missing VAR>0 K state of these materials(3,4).
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 1, ',', 1],[24.0, 3, ',', 0]

K
###Correlation between scale-invariant normal state resistivity and superconductivity in an electron-doped cuprate|Tarapada Sarkar,P. R. Mandal,N. R. Poniatowski,M. K. Chan,Richard L. Greene###
(1613487, 1613487)
 In electron-doped cuprates in contrast tohole-doped cuprates it is possible to access the normal state at very lowtemperatures and low magnetic fields to study this putative Q<missing VAR>CP and to probethe T<missing VAR>0 K state of these materials(3,4).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 1, ',', 1],[10.0, 3, ',', 0]

La2-x
###Correlation between scale-invariant normal state resistivity and superconductivity in an electron-doped cuprate|Tarapada Sarkar,P. R. Mandal,N. R. Poniatowski,M. K. Chan,Richard L. Greene###
(1613542, 1613545)
 We report measurements of the lowtemperature normal state magnetoresistance (MR) of the n<missing VAR>-type cuprate systemLa2-xCexCuO4 (L<missing VAR>CCO) and find that it is characterized by a linear-in-fieldbehavior, which follows a scaling relation with applied field and temperature,for doping (x) above the putative Q<missing VAR>CP (x<missing VAR> 0.14)(5).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[139.0, 1, ',', 2],[45.0, 3, ',', 1]

CuO4
###Correlation between scale-invariant normal state resistivity and superconductivity in an electron-doped cuprate|Tarapada Sarkar,P. R. Mandal,N. R. Poniatowski,M. K. Chan,Richard L. Greene###
(1613547, 1613549)
 We report measurements of the lowtemperature normal state magnetoresistance (MR) of the n<missing VAR>-type cuprate systemLa2-xCexCuO4 (L<missing VAR>CCO) and find that it is characterized by a linear-in-fieldbehavior, which follows a scaling relation with applied field and temperature,for doping (x) above the putative Q<missing VAR>CP (x<missing VAR> 0.14)(5).
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 1, ',', 2],[50.0, 3, ',', 1]

O
###Correlation between scale-invariant normal state resistivity and superconductivity in an electron-doped cuprate|Tarapada Sarkar,P. R. Mandal,N. R. Poniatowski,M. K. Chan,Richard L. Greene###
(1613555, 1613555)
 We report measurements of the lowtemperature normal state magnetoresistance (MR) of the n<missing VAR>-type cuprate systemLa2-xCexCuO4 (L<missing VAR>CCO) and find that it is characterized by a linear-in-fieldbehavior, which follows a scaling relation with applied field and temperature,for doping (x) above the putative Q<missing VAR>CP (x<missing VAR> 0.14)(5).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 1, ',', 2],[58.0, 3, ',', 1]

CP
###Correlation between scale-invariant normal state resistivity and superconductivity in an electron-doped cuprate|Tarapada Sarkar,P. R. Mandal,N. R. Poniatowski,M. K. Chan,Richard L. Greene###
(1613621, 1613622)
 We report measurements of the lowtemperature normal state magnetoresistance (MR) of the n<missing VAR>-type cuprate systemLa2-xCexCuO4 (L<missing VAR>CCO) and find that it is characterized by a linear-in-fieldbehavior, which follows a scaling relation with applied field and temperature,for doping (x) above the putative Q<missing VAR>CP (x<missing VAR> 0.14)(5).
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[218.0, 1, ',', 2],[124.0, 3, ',', 1]

Tc
###Correlation between scale-invariant normal state resistivity and superconductivity in an electron-doped cuprate|Tarapada Sarkar,P. R. Mandal,N. R. Poniatowski,M. K. Chan,Richard L. Greene###
(1613704, 1613704)
 The magnitude ofthe linear MR decreases as Tc decreases and goes to zero at the end of thesuperconducting dome (x<missing VAR> 0.175) above which a conventional quadratic MR isfound.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[301.0, 1, ',', 4],[207.0, 3, ',', 3]

Tc
###Correlation between scale-invariant normal state resistivity and superconductivity in an electron-doped cuprate|Tarapada Sarkar,P. R. Mandal,N. R. Poniatowski,M. K. Chan,Richard L. Greene###
(1613801, 1613801)
 These results show that there is a strong correlation between thequantum critical excitations of the strange metal state and the high-Tcsuperconductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[398.0, 1, ',', 5],[304.0, 3, ',', 4]

Pr2CoMnO6
###Magnetic behavior, Griffiths phase and magneto-transport study in 3$d$ based nano-crystalline double perovskite Pr$_2$CoMnO$_6$|Ilyas Noor Bhatti,Rabindra Nath Mahato,Imtiaz Noor Bhatti,M. A. H. Ahsan###
(1613847, 1613852)
Magnetic behavior, Griffiths phase and magneto-transport study in 3d<missing VAR> based nano-crystalline double perovskite Pr2CoMnO6.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 173, 'K', 5],[246.0, 206, 'K', 6],[448.0, 50, 'kOe', 11]

P
###Magnetic behavior, Griffiths phase and magneto-transport study in 3$d$ based nano-crystalline double perovskite Pr$_2$CoMnO$_6$|Ilyas Noor Bhatti,Rabindra Nath Mahato,Imtiaz Noor Bhatti,M. A. H. Ahsan###
(1613861, 1613861)
 Double perovskite (D<missing VAR>P) oxide material receive extensive research interest dueto exciting physical properties with potential technological application.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 173, 'K', 4],[237.0, 206, 'K', 5],[439.0, 50, 'kOe', 10]

P
###Magnetic behavior, Griffiths phase and magneto-transport study in 3$d$ based nano-crystalline double perovskite Pr$_2$CoMnO$_6$|Ilyas Noor Bhatti,Rabindra Nath Mahato,Imtiaz Noor Bhatti,M. A. H. Ahsan###
(1613903, 1613903)
 3d<missing VAR>based D<missing VAR>P oxides are promising for exciting physics like magnetodielectric,ferroelectric, Griffith phase etc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 173, 'K', 3],[195.0, 206, 'K', 4],[397.0, 50, 'kOe', 9]

Co/Mn
###Magnetic behavior, Griffiths phase and magneto-transport study in 3$d$ based nano-crystalline double perovskite Pr$_2$CoMnO$_6$|Ilyas Noor Bhatti,Rabindra Nath Mahato,Imtiaz Noor Bhatti,M. A. H. Ahsan###
(1613936, 1613938)
, specially Co/Mn D<missing VAR>Ps are gaining muchresearch interest.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[102.0, 173, 'K', 2],[160.0, 206, 'K', 3],[362.0, 50, 'kOe', 8]

In
###Magnetic behavior, Griffiths phase and magneto-transport study in 3$d$ based nano-crystalline double perovskite Pr$_2$CoMnO$_6$|Ilyas Noor Bhatti,Rabindra Nath Mahato,Imtiaz Noor Bhatti,M. A. H. Ahsan###
(1613955, 1613955)
 In this paper we present the study of magnetic phase andtransport properties in nano-crystalline Pr2CoMnO6 a 3d<missing VAR> based doubleperovskite compound.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 173, 'K', 1],[143.0, 206, 'K', 2],[345.0, 50, 'kOe', 7]

Pr2CoMnO6
###Magnetic behavior, Griffiths phase and magneto-transport study in 3$d$ based nano-crystalline double perovskite Pr$_2$CoMnO$_6$|Ilyas Noor Bhatti,Rabindra Nath Mahato,Imtiaz Noor Bhatti,M. A. H. Ahsan###
(1613988, 1613993)
 In this paper we present the study of magnetic phase andtransport properties in nano-crystalline Pr2CoMnO6 a 3d<missing VAR> based doubleperovskite compound.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 173, 'K', 1],[105.0, 206, 'K', 2],[307.0, 50, 'kOe', 7]

P
###Magnetic behavior, Griffiths phase and magneto-transport study in 3$d$ based nano-crystalline double perovskite Pr$_2$CoMnO$_6$|Ilyas Noor Bhatti,Rabindra Nath Mahato,Imtiaz Noor Bhatti,M. A. H. Ahsan###
(1614021, 1614021)
 This material shows a paramagnetic (PM) to ferromagnetic(FM) phase transition below 173 K marked by a rapid increase in magnetic momentdue to spin ordering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 173, 'K', 0],[77.0, 206, 'K', 1],[279.0, 50, 'kOe', 6]

F
###Magnetic behavior, Griffiths phase and magneto-transport study in 3$d$ based nano-crystalline double perovskite Pr$_2$CoMnO$_6$|Ilyas Noor Bhatti,Rabindra Nath Mahato,Imtiaz Noor Bhatti,M. A. H. Ahsan###
(1614031, 1614031)
 This material shows a paramagnetic (PM) to ferromagnetic(FM) phase transition below 173 K marked by a rapid increase in magnetic momentdue to spin ordering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 173, 'K', 0],[67.0, 206, 'K', 1],[269.0, 50, 'kOe', 6]

P
###Magnetic behavior, Griffiths phase and magneto-transport study in 3$d$ based nano-crystalline double perovskite Pr$_2$CoMnO$_6$|Ilyas Noor Bhatti,Rabindra Nath Mahato,Imtiaz Noor Bhatti,M. A. H. Ahsan###
(1614119, 1614119)
 We found divergence in inverse magnetic susceptibility(chi-1) from Curie weiss behavior around 206 K which indicates theevolution of Griffiths phase before actual PM<missing VAR>-FM<missing VAR> transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 173, 'K', 1],[21.0, 206, 'K', 0],[181.0, 50, 'kOe', 5]

F
###Magnetic behavior, Griffiths phase and magneto-transport study in 3$d$ based nano-crystalline double perovskite Pr$_2$CoMnO$_6$|Ilyas Noor Bhatti,Rabindra Nath Mahato,Imtiaz Noor Bhatti,M. A. H. Ahsan###
(1614122, 1614122)
 We found divergence in inverse magnetic susceptibility(chi-1) from Curie weiss behavior around 206 K which indicates theevolution of Griffiths phase before actual PM<missing VAR>-FM<missing VAR> transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 173, 'K', 1],[24.0, 206, 'K', 0],[178.0, 50, 'kOe', 5]

Pr2CoMnO6
###Magnetic behavior, Griffiths phase and magneto-transport study in 3$d$ based nano-crystalline double perovskite Pr$_2$CoMnO$_6$|Ilyas Noor Bhatti,Rabindra Nath Mahato,Imtiaz Noor Bhatti,M. A. H. Ahsan###
(1614189, 1614194)
 Pr2CoMnO6 is a strong insulator whereresistivity increase abruptly below magnetic phase transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 173, 'K', 4],[91.0, 206, 'K', 3],[106.0, 50, 'kOe', 2]

K
###Magnetic behavior, Griffiths phase and magneto-transport study in 3$d$ based nano-crystalline double perovskite Pr$_2$CoMnO$_6$|Ilyas Noor Bhatti,Rabindra Nath Mahato,Imtiaz Noor Bhatti,M. A. H. Ahsan###
(1614307, 1614307)
 Sample shows the negative MRwith maximum value sim22 % under applied magnetic field of 50 kOe at 125K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[267.0, 173, 'K', 6],[209.0, 206, 'K', 5],[7.0, 50, 'kOe', 0]

I
###Transport in magnetically doped topological insulators: Effects of magnetic clusters|A. N. Zarezad,J. Abouie###
(1614416, 1614416)
 We study the electron transport in a magnetically doped three dimensionaltopological insulator (T<missing VAR>I) by taking the effects of impurity-impurity exchangeinteractions into account.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Transport in magnetically doped topological insulators: Effects of magnetic clusters|A. N. Zarezad,J. Abouie###
(1614499, 1614499)
 The interactions between magnetic impurities giverise to the formation of it magnetic clusters with temperature dependentmean sizes, randomly distributed on the surface of the T<missing VAR>I.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Transport in magnetically doped topological insulators: Effects of magnetic clusters|A. N. Zarezad,J. Abouie###
(1614607, 1614607)
 Within the semiclassical Boltzmann approach, employinga generalized relaxation time approximation, we obtain the surface conductivityof the T<missing VAR>I by solving four sets of recursive relations and demonstrate that, thesystem is highly anisotropic and the surface conductivities possessnon-monotonic behaviors, they strongly depends on the direction, the mean sizeand the number of magnetic clusters.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Transport in magnetically doped topological insulators: Effects of magnetic clusters|A. N. Zarezad,J. Abouie###
(1614751, 1614751)
 We demonstrate that the dependence of theanisotropic magnetoresistance (AMR) to the spin direction of the magneticclusters is inconsistent with the angular dependence of the T<missing VAR>I doped withnon-interacting magnetic impurities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr
###Transport in magnetically doped topological insulators: Effects of magnetic clusters|A. N. Zarezad,J. Abouie###
(1614796, 1614796)
 Our results are consistent with the recentexperiment on the AMR of the Cr-doped rm (Bi, Sb)2rm Te3 T<missing VAR>I.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi
###Transport in magnetically doped topological insulators: Effects of magnetic clusters|A. N. Zarezad,J. Abouie###
(1614803, 1614803)
 Our results are consistent with the recentexperiment on the AMR of the Cr-doped rm (Bi, Sb)2rm Te3 T<missing VAR>I.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sb
###Transport in magnetically doped topological insulators: Effects of magnetic clusters|A. N. Zarezad,J. Abouie###
(1614806, 1614806)
 Our results are consistent with the recentexperiment on the AMR of the Cr-doped rm (Bi, Sb)2rm Te3 T<missing VAR>I.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Te3
###Transport in magnetically doped topological insulators: Effects of magnetic clusters|A. N. Zarezad,J. Abouie###
(1614811, 1614812)
 Our results are consistent with the recentexperiment on the AMR of the Cr-doped rm (Bi, Sb)2rm Te3 T<missing VAR>I.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Transport in magnetically doped topological insulators: Effects of magnetic clusters|A. N. Zarezad,J. Abouie###
(1614815, 1614815)
 Our results are consistent with the recentexperiment on the AMR of the Cr-doped rm (Bi, Sb)2rm Te3 T<missing VAR>I.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ta2NiSe7
###Angle-dependent magnetoresistance as a sensitive probe of the charge density wave in quasi-one-dimensional semimetal Ta$_2$NiSe$_7$|Jiaming He,Libin Wen,Yueshen Wu,Jinyu Liu,Guoxiong Tang,Yusen Yang,Hui Xing,Zhiqiang Mao,Hong Sun,Ying Liu###
(1614860, 1614864)
Angle-dependent magnetoresistance as a sensitive probe of the charge density wave in quasi-one-dimensional semimetal Ta2NiSe7.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0.7,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Angle-dependent magnetoresistance as a sensitive probe of the charge density wave in quasi-one-dimensional semimetal Ta$_2$NiSe$_7$|Jiaming He,Libin Wen,Yueshen Wu,Jinyu Liu,Guoxiong Tang,Yusen Yang,Hui Xing,Zhiqiang Mao,Hong Sun,Ying Liu###
(1614880, 1614880)
 The behavior of charge density wave (CD<missing VAR>W) in an external magnetic field isdictated by both orbital and Pauli (Zeeman) effects.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Angle-dependent magnetoresistance as a sensitive probe of the charge density wave in quasi-one-dimensional semimetal Ta$_2$NiSe$_7$|Jiaming He,Libin Wen,Yueshen Wu,Jinyu Liu,Guoxiong Tang,Yusen Yang,Hui Xing,Zhiqiang Mao,Hong Sun,Ying Liu###
(1614882, 1614882)
 The behavior of charge density wave (CD<missing VAR>W) in an external magnetic field isdictated by both orbital and Pauli (Zeeman) effects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Angle-dependent magnetoresistance as a sensitive probe of the charge density wave in quasi-one-dimensional semimetal Ta$_2$NiSe$_7$|Jiaming He,Libin Wen,Yueshen Wu,Jinyu Liu,Guoxiong Tang,Yusen Yang,Hui Xing,Zhiqiang Mao,Hong Sun,Ying Liu###
(1615005, 1615005)
 Here we studied the field dependence of an incommensurateCD<missing VAR>W in a transition-metal chalcogenide Ta2NiSe7 with a Q1D chain structure.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Angle-dependent magnetoresistance as a sensitive probe of the charge density wave in quasi-one-dimensional semimetal Ta$_2$NiSe$_7$|Jiaming He,Libin Wen,Yueshen Wu,Jinyu Liu,Guoxiong Tang,Yusen Yang,Hui Xing,Zhiqiang Mao,Hong Sun,Ying Liu###
(1615007, 1615007)
 Here we studied the field dependence of an incommensurateCD<missing VAR>W in a transition-metal chalcogenide Ta2NiSe7 with a Q1D chain structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ta2NiSe7
###Angle-dependent magnetoresistance as a sensitive probe of the charge density wave in quasi-one-dimensional semimetal Ta$_2$NiSe$_7$|Jiaming He,Libin Wen,Yueshen Wu,Jinyu Liu,Guoxiong Tang,Yusen Yang,Hui Xing,Zhiqiang Mao,Hong Sun,Ying Liu###
(1615019, 1615023)
 Here we studied the field dependence of an incommensurateCD<missing VAR>W in a transition-metal chalcogenide Ta2NiSe7 with a Q1D chain structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0.7,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Angle-dependent magnetoresistance as a sensitive probe of the charge density wave in quasi-one-dimensional semimetal Ta$_2$NiSe$_7$|Jiaming He,Libin Wen,Yueshen Wu,Jinyu Liu,Guoxiong Tang,Yusen Yang,Hui Xing,Zhiqiang Mao,Hong Sun,Ying Liu###
(1615147, 1615147)
 Withan applied current fixed along the b<missing VAR> axis (the chain direction), theangle-dependent MR shows a striking change of the symmetry below TCDW only fora rotating magnetic field in the ac plane.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Angle-dependent magnetoresistance as a sensitive probe of the charge density wave in quasi-one-dimensional semimetal Ta$_2$NiSe$_7$|Jiaming He,Libin Wen,Yueshen Wu,Jinyu Liu,Guoxiong Tang,Yusen Yang,Hui Xing,Zhiqiang Mao,Hong Sun,Ying Liu###
(1615171, 1615171)
 In contrast, the symmetry axisremains unchanged for other configurations (H in ab and bc plane).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Angle-dependent magnetoresistance as a sensitive probe of the charge density wave in quasi-one-dimensional semimetal Ta$_2$NiSe$_7$|Jiaming He,Libin Wen,Yueshen Wu,Jinyu Liu,Guoxiong Tang,Yusen Yang,Hui Xing,Zhiqiang Mao,Hong Sun,Ying Liu###
(1615194, 1615194)
 In contrast, the symmetry axisremains unchanged for other configurations (H in ab and bc plane).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Angle-dependent magnetoresistance as a sensitive probe of the charge density wave in quasi-one-dimensional semimetal Ta$_2$NiSe$_7$|Jiaming He,Libin Wen,Yueshen Wu,Jinyu Liu,Guoxiong Tang,Yusen Yang,Hui Xing,Zhiqiang Mao,Hong Sun,Ying Liu###
(1615242, 1615242)
 The orbitaleffect conforms to the lattice symmetry, while Pauli effect in the form ofmuB B / v<missing VAR>F can be responsible for such symmetry change, provided that theFermi velocity v<missing VAR>F is significantly anisotropic and the nesting vector changesin a magnetic field, which is corroborated by our first-principlescalculations.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Angle-dependent magnetoresistance as a sensitive probe of the charge density wave in quasi-one-dimensional semimetal Ta$_2$NiSe$_7$|Jiaming He,Libin Wen,Yueshen Wu,Jinyu Liu,Guoxiong Tang,Yusen Yang,Hui Xing,Zhiqiang Mao,Hong Sun,Ying Liu###
(1615244, 1615244)
 The orbitaleffect conforms to the lattice symmetry, while Pauli effect in the form ofmuB B / v<missing VAR>F can be responsible for such symmetry change, provided that theFermi velocity v<missing VAR>F is significantly anisotropic and the nesting vector changesin a magnetic field, which is corroborated by our first-principlescalculations.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Angle-dependent magnetoresistance as a sensitive probe of the charge density wave in quasi-one-dimensional semimetal Ta$_2$NiSe$_7$|Jiaming He,Libin Wen,Yueshen Wu,Jinyu Liu,Guoxiong Tang,Yusen Yang,Hui Xing,Zhiqiang Mao,Hong Sun,Ying Liu###
(1615249, 1615249)
 The orbitaleffect conforms to the lattice symmetry, while Pauli effect in the form ofmuB B / v<missing VAR>F can be responsible for such symmetry change, provided that theFermi velocity v<missing VAR>F is significantly anisotropic and the nesting vector changesin a magnetic field, which is corroborated by our first-principlescalculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Angle-dependent magnetoresistance as a sensitive probe of the charge density wave in quasi-one-dimensional semimetal Ta$_2$NiSe$_7$|Jiaming He,Libin Wen,Yueshen Wu,Jinyu Liu,Guoxiong Tang,Yusen Yang,Hui Xing,Zhiqiang Mao,Hong Sun,Ying Liu###
(1615278, 1615278)
 The orbitaleffect conforms to the lattice symmetry, while Pauli effect in the form ofmuB B / v<missing VAR>F can be responsible for such symmetry change, provided that theFermi velocity v<missing VAR>F is significantly anisotropic and the nesting vector changesin a magnetic field, which is corroborated by our first-principlescalculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Angle-dependent magnetoresistance as a sensitive probe of the charge density wave in quasi-one-dimensional semimetal Ta$_2$NiSe$_7$|Jiaming He,Libin Wen,Yueshen Wu,Jinyu Liu,Guoxiong Tang,Yusen Yang,Hui Xing,Zhiqiang Mao,Hong Sun,Ying Liu###
(1615354, 1615354)
 Our results show that the angle-dependent MR is a sensitivetransport probe of CD<missing VAR>W and can be useful for the study of low-dimensionalsystems in general.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Angle-dependent magnetoresistance as a sensitive probe of the charge density wave in quasi-one-dimensional semimetal Ta$_2$NiSe$_7$|Jiaming He,Libin Wen,Yueshen Wu,Jinyu Liu,Guoxiong Tang,Yusen Yang,Hui Xing,Zhiqiang Mao,Hong Sun,Ying Liu###
(1615356, 1615356)
 Our results show that the angle-dependent MR is a sensitivetransport probe of CD<missing VAR>W and can be useful for the study of low-dimensionalsystems in general.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaFeO3
###Doping induced site-selective Mott insulating phase in LaFeO$_3$|S. Jana,S. K. Panda,D. Phuyal,B. Pal,S. Mukherjee,A. Dutta,P. Anil Kumar,D. Hedlund,J. Schott,P. Thunstrom,Y. Kvashnin,H. Rensmo,M. Venkata Kamalakar,Carlo. U. Segre,P. Svedlindh,K. Gunnarsson,S. Biermann,O. Eriksson,O. Karis,D. D. Sarma###
(1615410, 1615413)
Doping induced site-selective Mott insulating phase in LaFeO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Doping induced site-selective Mott insulating phase in LaFeO$_3$|S. Jana,S. K. Panda,D. Phuyal,B. Pal,S. Mukherjee,A. Dutta,P. Anil Kumar,D. Hedlund,J. Schott,P. Thunstrom,Y. Kvashnin,H. Rensmo,M. Venkata Kamalakar,Carlo. U. Segre,P. Svedlindh,K. Gunnarsson,S. Biermann,O. Eriksson,O. Karis,D. D. Sarma###
(1615456, 1615456)
 In copperoxides, varying the carrier concentration is a tool to obtain high-temperaturesuperconducting phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Doping induced site-selective Mott insulating phase in LaFeO$_3$|S. Jana,S. K. Panda,D. Phuyal,B. Pal,S. Mukherjee,A. Dutta,P. Anil Kumar,D. Hedlund,J. Schott,P. Thunstrom,Y. Kvashnin,H. Rensmo,M. Venkata Kamalakar,Carlo. U. Segre,P. Svedlindh,K. Gunnarsson,S. Biermann,O. Eriksson,O. Karis,D. D. Sarma###
(1615492, 1615492)
 In manganites, doping results in exotic physics such asinsulator-metal transitions (IMT), colossal magnetoresistance (CMR), orbital-or charge-ordered (CO) or charge-disproportionate (CD) states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Doping induced site-selective Mott insulating phase in LaFeO$_3$|S. Jana,S. K. Panda,D. Phuyal,B. Pal,S. Mukherjee,A. Dutta,P. Anil Kumar,D. Hedlund,J. Schott,P. Thunstrom,Y. Kvashnin,H. Rensmo,M. Venkata Kamalakar,Carlo. U. Segre,P. Svedlindh,K. Gunnarsson,S. Biermann,O. Eriksson,O. Karis,D. D. Sarma###
(1615519, 1615519)
 In manganites, doping results in exotic physics such asinsulator-metal transitions (IMT), colossal magnetoresistance (CMR), orbital-or charge-ordered (CO) or charge-disproportionate (CD) states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Doping induced site-selective Mott insulating phase in LaFeO$_3$|S. Jana,S. K. Panda,D. Phuyal,B. Pal,S. Mukherjee,A. Dutta,P. Anil Kumar,D. Hedlund,J. Schott,P. Thunstrom,Y. Kvashnin,H. Rensmo,M. Venkata Kamalakar,Carlo. U. Segre,P. Svedlindh,K. Gunnarsson,S. Biermann,O. Eriksson,O. Karis,D. D. Sarma###
(1615530, 1615530)
 In manganites, doping results in exotic physics such asinsulator-metal transitions (IMT), colossal magnetoresistance (CMR), orbital-or charge-ordered (CO) or charge-disproportionate (CD) states.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(CO)
###Doping induced site-selective Mott insulating phase in LaFeO$_3$|S. Jana,S. K. Panda,D. Phuyal,B. Pal,S. Mukherjee,A. Dutta,P. Anil Kumar,D. Hedlund,J. Schott,P. Thunstrom,Y. Kvashnin,H. Rensmo,M. Venkata Kamalakar,Carlo. U. Segre,P. Svedlindh,K. Gunnarsson,S. Biermann,O. Eriksson,O. Karis,D. D. Sarma###
(1615546, 1615549)
 In manganites, doping results in exotic physics such asinsulator-metal transitions (IMT), colossal magnetoresistance (CMR), orbital-or charge-ordered (CO) or charge-disproportionate (CD) states.
Featurization successful!
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Doping induced site-selective Mott insulating phase in LaFeO$_3$|S. Jana,S. K. Panda,D. Phuyal,B. Pal,S. Mukherjee,A. Dutta,P. Anil Kumar,D. Hedlund,J. Schott,P. Thunstrom,Y. Kvashnin,H. Rensmo,M. Venkata Kamalakar,Carlo. U. Segre,P. Svedlindh,K. Gunnarsson,S. Biermann,O. Eriksson,O. Karis,D. D. Sarma###
(1615558, 1615558)
 In manganites, doping results in exotic physics such asinsulator-metal transitions (IMT), colossal magnetoresistance (CMR), orbital-or charge-ordered (CO) or charge-disproportionate (CD) states.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Doping induced site-selective Mott insulating phase in LaFeO$_3$|S. Jana,S. K. Panda,D. Phuyal,B. Pal,S. Mukherjee,A. Dutta,P. Anil Kumar,D. Hedlund,J. Schott,P. Thunstrom,Y. Kvashnin,H. Rensmo,M. Venkata Kamalakar,Carlo. U. Segre,P. Svedlindh,K. Gunnarsson,S. Biermann,O. Eriksson,O. Karis,D. D. Sarma###
(1615565, 1615565)
 In most oxides,antiferromagnetic order and charge-disproportionation are asssociated withinsulating behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mo
###Doping induced site-selective Mott insulating phase in LaFeO$_3$|S. Jana,S. K. Panda,D. Phuyal,B. Pal,S. Mukherjee,A. Dutta,P. Anil Kumar,D. Hedlund,J. Schott,P. Thunstrom,Y. Kvashnin,H. Rensmo,M. Venkata Kamalakar,Carlo. U. Segre,P. Svedlindh,K. Gunnarsson,S. Biermann,O. Eriksson,O. Karis,D. D. Sarma###
(1615626, 1615626)
 Here we report the realization of a unique physical statethat can be induced by Mo doping in LaFeO3 the resulting metallic state isa site-selective Mott insulator where itinerant electrons evolving inlow-energy Mo states coexist with localized carriers on the Fe sites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaFeO3
###Doping induced site-selective Mott insulating phase in LaFeO$_3$|S. Jana,S. K. Panda,D. Phuyal,B. Pal,S. Mukherjee,A. Dutta,P. Anil Kumar,D. Hedlund,J. Schott,P. Thunstrom,Y. Kvashnin,H. Rensmo,M. Venkata Kamalakar,Carlo. U. Segre,P. Svedlindh,K. Gunnarsson,S. Biermann,O. Eriksson,O. Karis,D. D. Sarma###
(1615632, 1615635)
 Here we report the realization of a unique physical statethat can be induced by Mo doping in LaFeO3 the resulting metallic state isa site-selective Mott insulator where itinerant electrons evolving inlow-energy Mo states coexist with localized carriers on the Fe sites.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mo
###Doping induced site-selective Mott insulating phase in LaFeO$_3$|S. Jana,S. K. Panda,D. Phuyal,B. Pal,S. Mukherjee,A. Dutta,P. Anil Kumar,D. Hedlund,J. Schott,P. Thunstrom,Y. Kvashnin,H. Rensmo,M. Venkata Kamalakar,Carlo. U. Segre,P. Svedlindh,K. Gunnarsson,S. Biermann,O. Eriksson,O. Karis,D. D. Sarma###
(1615673, 1615673)
 Here we report the realization of a unique physical statethat can be induced by Mo doping in LaFeO3 the resulting metallic state isa site-selective Mott insulator where itinerant electrons evolving inlow-energy Mo states coexist with localized carriers on the Fe sites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Doping induced site-selective Mott insulating phase in LaFeO$_3$|S. Jana,S. K. Panda,D. Phuyal,B. Pal,S. Mukherjee,A. Dutta,P. Anil Kumar,D. Hedlund,J. Schott,P. Thunstrom,Y. Kvashnin,H. Rensmo,M. Venkata Kamalakar,Carlo. U. Segre,P. Svedlindh,K. Gunnarsson,S. Biermann,O. Eriksson,O. Karis,D. D. Sarma###
(1615689, 1615689)
 Here we report the realization of a unique physical statethat can be induced by Mo doping in LaFeO3 the resulting metallic state isa site-selective Mott insulator where itinerant electrons evolving inlow-energy Mo states coexist with localized carriers on the Fe sites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Doping induced site-selective Mott insulating phase in LaFeO$_3$|S. Jana,S. K. Panda,D. Phuyal,B. Pal,S. Mukherjee,A. Dutta,P. Anil Kumar,D. Hedlund,J. Schott,P. Thunstrom,Y. Kvashnin,H. Rensmo,M. Venkata Kamalakar,Carlo. U. Segre,P. Svedlindh,K. Gunnarsson,S. Biermann,O. Eriksson,O. Karis,D. D. Sarma###
(1615694, 1615694)
 Inaddition, a local breathing-type lattice distortion induces chargedisproportionation on the latter, without destroying the antiferromagneticorder.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Doping induced site-selective Mott insulating phase in LaFeO$_3$|S. Jana,S. K. Panda,D. Phuyal,B. Pal,S. Mukherjee,A. Dutta,P. Anil Kumar,D. Hedlund,J. Schott,P. Thunstrom,Y. Kvashnin,H. Rensmo,M. Venkata Kamalakar,Carlo. U. Segre,P. Svedlindh,K. Gunnarsson,S. Biermann,O. Eriksson,O. Karis,D. D. Sarma###
(1615752, 1615752)
 A state, combining antiferromangetism, metallicity and CD<missing VAR> phenomena israther rare in oxides and may be of utmost significance for futureantiferromagnetic memory devices.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TaIrTe4
###Observation of superconductivity in pressurized Weyl semimetal candidate TaIrTe4|Shu Cai,Eve Emmanouilidou,Jing Guo,Xiaodong Li,Yanchuan Li,Ke Yang,Aiguo Li,Qi Wu,Ni Ni,Liling Sun###
(1615816, 1615819)
Observation of superconductivity in pressurized Weyl semimetal candidate TaIrTe4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 0.57, 'K', 2],[143.0, 65.7, 'GPa', 3],[325.0, 19.2, '%', 6]

II
###Observation of superconductivity in pressurized Weyl semimetal candidate TaIrTe4|Shu Cai,Eve Emmanouilidou,Jing Guo,Xiaodong Li,Yanchuan Li,Ke Yang,Aiguo Li,Qi Wu,Ni Ni,Liling Sun###
(1615842, 1615843)
 Here we report the observation of superconductivity in pressurized type-IIWeyl semimetal (WSM) candidate TaIrTe4 by means of complementary high-pressuretransport and synchrotron X<missing VAR>-ray diffraction measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 0.57, 'K', 1],[119.0, 65.7, 'GPa', 2],[301.0, 19.2, '%', 5]

WS
###Observation of superconductivity in pressurized Weyl semimetal candidate TaIrTe4|Shu Cai,Eve Emmanouilidou,Jing Guo,Xiaodong Li,Yanchuan Li,Ke Yang,Aiguo Li,Qi Wu,Ni Ni,Liling Sun###
(1615851, 1615852)
 Here we report the observation of superconductivity in pressurized type-IIWeyl semimetal (WSM) candidate TaIrTe4 by means of complementary high-pressuretransport and synchrotron X<missing VAR>-ray diffraction measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 0.57, 'K', 1],[110.0, 65.7, 'GPa', 2],[292.0, 19.2, '%', 5]

TaIrTe4
###Observation of superconductivity in pressurized Weyl semimetal candidate TaIrTe4|Shu Cai,Eve Emmanouilidou,Jing Guo,Xiaodong Li,Yanchuan Li,Ke Yang,Aiguo Li,Qi Wu,Ni Ni,Liling Sun###
(1615858, 1615861)
 Here we report the observation of superconductivity in pressurized type-IIWeyl semimetal (WSM) candidate TaIrTe4 by means of complementary high-pressuretransport and synchrotron X<missing VAR>-ray diffraction measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 0.57, 'K', 1],[101.0, 65.7, 'GPa', 2],[283.0, 19.2, '%', 5]

TaIrTe4
###Observation of superconductivity in pressurized Weyl semimetal candidate TaIrTe4|Shu Cai,Eve Emmanouilidou,Jing Guo,Xiaodong Li,Yanchuan Li,Ke Yang,Aiguo Li,Qi Wu,Ni Ni,Liling Sun###
(1615897, 1615900)
 We find that TaIrTe4shows superconductivity with transition temperature (T<missing VAR>C) of 0.57 K at thepressure of 23.8 G<missing VAR>Pa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 0.57, 'K', 0],[62.0, 65.7, 'GPa', 1],[244.0, 19.2, '%', 4]

C
###Observation of superconductivity in pressurized Weyl semimetal candidate TaIrTe4|Shu Cai,Eve Emmanouilidou,Jing Guo,Xiaodong Li,Yanchuan Li,Ke Yang,Aiguo Li,Qi Wu,Ni Ni,Liling Sun###
(1615915, 1615915)
 We find that TaIrTe4shows superconductivity with transition temperature (T<missing VAR>C) of 0.57 K at thepressure of 23.8 G<missing VAR>Pa.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 0.57, 'K', 0],[47.0, 65.7, 'GPa', 1],[229.0, 19.2, '%', 4]

Pa
###Observation of superconductivity in pressurized Weyl semimetal candidate TaIrTe4|Shu Cai,Eve Emmanouilidou,Jing Guo,Xiaodong Li,Yanchuan Li,Ke Yang,Aiguo Li,Qi Wu,Ni Ni,Liling Sun###
(1615933, 1615933)
 We find that TaIrTe4shows superconductivity with transition temperature (T<missing VAR>C) of 0.57 K at thepressure of 23.8 G<missing VAR>Pa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 0.57, 'K', 0],[29.0, 65.7, 'GPa', 1],[211.0, 19.2, '%', 4]

C
###Observation of superconductivity in pressurized Weyl semimetal candidate TaIrTe4|Shu Cai,Eve Emmanouilidou,Jing Guo,Xiaodong Li,Yanchuan Li,Ke Yang,Aiguo Li,Qi Wu,Ni Ni,Liling Sun###
(1615942, 1615942)
 Then, the T<missing VAR>C value increases with pressure and reaches2.1 K at 65.7 GPa.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 0.57, 'K', 1],[20.0, 65.7, 'GPa', 0],[202.0, 19.2, '%', 3]

K
###Observation of superconductivity in pressurized Weyl semimetal candidate TaIrTe4|Shu Cai,Eve Emmanouilidou,Jing Guo,Xiaodong Li,Yanchuan Li,Ke Yang,Aiguo Li,Qi Wu,Ni Ni,Liling Sun###
(1615959, 1615959)
 Then, the T<missing VAR>C value increases with pressure and reaches2.1 K at 65.7 GPa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 0.57, 'K', 1],[3.0, 65.7, 'GPa', 0],[185.0, 19.2, '%', 3]

In
###Observation of superconductivity in pressurized Weyl semimetal candidate TaIrTe4|Shu Cai,Eve Emmanouilidou,Jing Guo,Xiaodong Li,Yanchuan Li,Ke Yang,Aiguo Li,Qi Wu,Ni Ni,Liling Sun###
(1615965, 1615965)
 In situ high-pressure Hall coefficient (R<missing VAR>H) measurements atlow temperatures demonstrate that the positive R<missing VAR>H increases with pressure untilthe critical pressure of the superconducting transition is reached, but startsto decrease upon further increasing pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 0.57, 'K', 2],[3.0, 65.7, 'GPa', 1],[179.0, 19.2, '%', 2]

H
###Observation of superconductivity in pressurized Weyl semimetal candidate TaIrTe4|Shu Cai,Eve Emmanouilidou,Jing Guo,Xiaodong Li,Yanchuan Li,Ke Yang,Aiguo Li,Qi Wu,Ni Ni,Liling Sun###
(1615979, 1615979)
 In situ high-pressure Hall coefficient (R<missing VAR>H) measurements atlow temperatures demonstrate that the positive R<missing VAR>H increases with pressure untilthe critical pressure of the superconducting transition is reached, but startsto decrease upon further increasing pressure.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 0.57, 'K', 2],[17.0, 65.7, 'GPa', 1],[165.0, 19.2, '%', 2]

H
###Observation of superconductivity in pressurized Weyl semimetal candidate TaIrTe4|Shu Cai,Eve Emmanouilidou,Jing Guo,Xiaodong Li,Yanchuan Li,Ke Yang,Aiguo Li,Qi Wu,Ni Ni,Liling Sun###
(1616000, 1616000)
 In situ high-pressure Hall coefficient (R<missing VAR>H) measurements atlow temperatures demonstrate that the positive R<missing VAR>H increases with pressure untilthe critical pressure of the superconducting transition is reached, but startsto decrease upon further increasing pressure.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 0.57, 'K', 2],[38.0, 65.7, 'GPa', 1],[144.0, 19.2, '%', 2]

TaIrTe4
###Observation of superconductivity in pressurized Weyl semimetal candidate TaIrTe4|Shu Cai,Eve Emmanouilidou,Jing Guo,Xiaodong Li,Yanchuan Li,Ke Yang,Aiguo Li,Qi Wu,Ni Ni,Liling Sun###
(1616110, 1616113)
 Our high pressureX<missing VAR>-ray diffraction measurements reveal that, at around the critical pressure thelattice of the TaIrTe4 sample is distorted by the application of pressure andits volume is reduced by 19.2%, the value of which is predicted to result inthe change of the electronic structure significantly.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[191.0, 0.57, 'K', 4],[148.0, 65.7, 'GPa', 3],[31.0, 19.2, '%', 0]

TaIrTe4
###Observation of superconductivity in pressurized Weyl semimetal candidate TaIrTe4|Shu Cai,Eve Emmanouilidou,Jing Guo,Xiaodong Li,Yanchuan Li,Ke Yang,Aiguo Li,Qi Wu,Ni Ni,Liling Sun###
(1616199, 1616202)
 We propose that thepressure-induced distortion in TaIrTe4 is responsible for the change oftopology of Fermi surface and such a change favors the emergence ofsuperconductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[280.0, 0.57, 'K', 5],[237.0, 65.7, 'GPa', 4],[55.0, 19.2, '%', 1]

WS
###Observation of superconductivity in pressurized Weyl semimetal candidate TaIrTe4|Shu Cai,Eve Emmanouilidou,Jing Guo,Xiaodong Li,Yanchuan Li,Ke Yang,Aiguo Li,Qi Wu,Ni Ni,Liling Sun###
(1616279, 1616280)
 Our results clearly demonstrate the correlation among thelattice distortion, topological physics and superconductivity in the WSM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[360.0, 0.57, 'K', 6],[317.0, 65.7, 'GPa', 5],[135.0, 19.2, '%', 2]

F
###Anatomy of electrical signals and dc-voltage lineshape in spin torque ferromagnetic resonance|Yin Zhang,Q. Liu,B. F. Miao,H. F. Ding,X. R. Wang###
(1616338, 1616338)
 The electrical detection of spin torque ferromagnetic resonance (st-FMR) isbecoming a popular method for measuring the spin-Hall angle of heavy metals(HM).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Anatomy of electrical signals and dc-voltage lineshape in spin torque ferromagnetic resonance|Yin Zhang,Q. Liu,B. F. Miao,H. F. Ding,X. R. Wang###
(1616374, 1616374)
 The electrical detection of spin torque ferromagnetic resonance (st-FMR) isbecoming a popular method for measuring the spin-Hall angle of heavy metals(HM).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Anatomy of electrical signals and dc-voltage lineshape in spin torque ferromagnetic resonance|Yin Zhang,Q. Liu,B. F. Miao,H. F. Ding,X. R. Wang###
(1616452, 1616452)
 However, various sensible analysis on the same material with either thesame or different experimental setups yielded different spin-Hall angles withlarge discrepancy, indicating some missing ingredients in our currentunderstanding of st-FMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Anatomy of electrical signals and dc-voltage lineshape in spin torque ferromagnetic resonance|Yin Zhang,Q. Liu,B. F. Miao,H. F. Ding,X. R. Wang###
(1616484, 1616484)
 Here we carry out a careful analysis of electricalsignals of the st-FMR in a HM<missing VAR>/ferromagnet (HM<missing VAR>/FM) bilayer with an arbitrarymagnetic anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Anatomy of electrical signals and dc-voltage lineshape in spin torque ferromagnetic resonance|Yin Zhang,Q. Liu,B. F. Miao,H. F. Ding,X. R. Wang###
(1616492, 1616492)
 Here we carry out a careful analysis of electricalsignals of the st-FMR in a HM<missing VAR>/ferromagnet (HM<missing VAR>/FM) bilayer with an arbitrarymagnetic anisotropy.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Anatomy of electrical signals and dc-voltage lineshape in spin torque ferromagnetic resonance|Yin Zhang,Q. Liu,B. F. Miao,H. F. Ding,X. R. Wang###
(1616498, 1616498)
 Here we carry out a careful analysis of electricalsignals of the st-FMR in a HM<missing VAR>/ferromagnet (HM<missing VAR>/FM) bilayer with an arbitrarymagnetic anisotropy.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Anatomy of electrical signals and dc-voltage lineshape in spin torque ferromagnetic resonance|Yin Zhang,Q. Liu,B. F. Miao,H. F. Ding,X. R. Wang###
(1616501, 1616501)
 Here we carry out a careful analysis of electricalsignals of the st-FMR in a HM<missing VAR>/ferromagnet (HM<missing VAR>/FM) bilayer with an arbitrarymagnetic anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Anatomy of electrical signals and dc-voltage lineshape in spin torque ferromagnetic resonance|Yin Zhang,Q. Liu,B. F. Miao,H. F. Ding,X. R. Wang###
(1616521, 1616521)
 The FM<missing VAR> magnetization is driven by two radio-frequency (rf)forces the rf Oersted field generated by an applied rf electric current andthe so called rf spin-orbit torque from the spin current flowingperpendicularly from the HM<missing VAR> to the FM<missing VAR> due to the spin-Hall effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Anatomy of electrical signals and dc-voltage lineshape in spin torque ferromagnetic resonance|Yin Zhang,Q. Liu,B. F. Miao,H. F. Ding,X. R. Wang###
(1616601, 1616601)
 The FM<missing VAR> magnetization is driven by two radio-frequency (rf)forces the rf Oersted field generated by an applied rf electric current andthe so called rf spin-orbit torque from the spin current flowingperpendicularly from the HM<missing VAR> to the FM<missing VAR> due to the spin-Hall effect.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Anatomy of electrical signals and dc-voltage lineshape in spin torque ferromagnetic resonance|Yin Zhang,Q. Liu,B. F. Miao,H. F. Ding,X. R. Wang###
(1616608, 1616608)
 The FM<missing VAR> magnetization is driven by two radio-frequency (rf)forces the rf Oersted field generated by an applied rf electric current andthe so called rf spin-orbit torque from the spin current flowingperpendicularly from the HM<missing VAR> to the FM<missing VAR> due to the spin-Hall effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Anatomy of electrical signals and dc-voltage lineshape in spin torque ferromagnetic resonance|Yin Zhang,Q. Liu,B. F. Miao,H. F. Ding,X. R. Wang###
(1616658, 1616658)
 By using theuniversal form of the dynamic susceptibility matrix of magnetic materials atthe st-FMR, the electrical signals originated from the anisotropicmagnetoresistance, anomalous Hall effect and inverse spin-Hall effect areanalysed and dc-voltage lineshape near the st-FMR are obtained.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Anatomy of electrical signals and dc-voltage lineshape in spin torque ferromagnetic resonance|Yin Zhang,Q. Liu,B. F. Miao,H. F. Ding,X. R. Wang###
(1616716, 1616716)
 By using theuniversal form of the dynamic susceptibility matrix of magnetic materials atthe st-FMR, the electrical signals originated from the anisotropicmagnetoresistance, anomalous Hall effect and inverse spin-Hall effect areanalysed and dc-voltage lineshape near the st-FMR are obtained.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Anatomy of electrical signals and dc-voltage lineshape in spin torque ferromagnetic resonance|Yin Zhang,Q. Liu,B. F. Miao,H. F. Ding,X. R. Wang###
(1616770, 1616770)
 A way of experimentallyextracting the spin-Hall angle of a HM<missing VAR> is proposed.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Tunable induced magnetic moment and in-plane conductance of graphene in Ni/graphene/Ni nano-spin-valve-like structure: a first principles study|Yusuf Wicaksono,Shingo Teranishi,Kazutaka Nishiguchi,Koichi Kusakabe###
(1616808, 1616808)
Tunable induced magnetic moment and in-plane conductance of graphene in Ni/graphene/Ni nano-spin-valve-like structure a first principles study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Tunable induced magnetic moment and in-plane conductance of graphene in Ni/graphene/Ni nano-spin-valve-like structure: a first principles study|Yusuf Wicaksono,Shingo Teranishi,Kazutaka Nishiguchi,Koichi Kusakabe###
(1616812, 1616812)
Tunable induced magnetic moment and in-plane conductance of graphene in Ni/graphene/Ni nano-spin-valve-like structure a first principles study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Tunable induced magnetic moment and in-plane conductance of graphene in Ni/graphene/Ni nano-spin-valve-like structure: a first principles study|Yusuf Wicaksono,Shingo Teranishi,Kazutaka Nishiguchi,Koichi Kusakabe###
(1616919, 1616919)
 In anenergetically stable stacking arrangement of graphene and two nickel layers,the anti-parallel spin configuration of the underlayer and overlayer magneticmoments had the lowest energy, which is in agreement with previous experimentalstudies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Tunable induced magnetic moment and in-plane conductance of graphene in Ni/graphene/Ni nano-spin-valve-like structure: a first principles study|Yusuf Wicaksono,Shingo Teranishi,Kazutaka Nishiguchi,Koichi Kusakabe###
(1617072, 1617072)
 The spin density mapping and obtained band-structure results show thatwhen the upper and lower Ni(111) slabs have an anti-parallel (parallel)magnetic-moment configuration, the carbon atoms of sublattices A and B willhave an antiferromagnetic (ferromagnetic) spin configuration.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Tunable induced magnetic moment and in-plane conductance of graphene in Ni/graphene/Ni nano-spin-valve-like structure: a first principles study|Yusuf Wicaksono,Shingo Teranishi,Kazutaka Nishiguchi,Koichi Kusakabe###
(1617228, 1617228)
 Both themagnetic properties and electronic structures of the Ni/graphene/Ninanostructure cause the system to be a new prospective spintronic deviceshowing controllable in-plane magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Tunable induced magnetic moment and in-plane conductance of graphene in Ni/graphene/Ni nano-spin-valve-like structure: a first principles study|Yusuf Wicaksono,Shingo Teranishi,Kazutaka Nishiguchi,Koichi Kusakabe###
(1617232, 1617232)
 Both themagnetic properties and electronic structures of the Ni/graphene/Ninanostructure cause the system to be a new prospective spintronic deviceshowing controllable in-plane magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Antiferromagnet-based spintronic functionality by controlling isospin domains in a layered perovskite iridate|Nara Lee,Eunjung Ko,Hwan Young Choi,Yun Jeong Hong,Muhammad Nauman,Woun Kang,Hyoung Joon Choi,Young Jai Choi,Younjung Jo###
(1617322, 1617322)
 The novel electronic state of the canted antiferromagnetic (AFM) insulator,strontium iridate (Sr2IrO4) has been well described by the spin-orbit-entangledisospin Jeff  1/2, but the role of isospin in transport phenomena remainspoorly understood.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 2, ',', 0]

(Sr2IrO4)
###Antiferromagnet-based spintronic functionality by controlling isospin domains in a layered perovskite iridate|Nara Lee,Eunjung Ko,Hwan Young Choi,Yun Jeong Hong,Muhammad Nauman,Woun Kang,Hyoung Joon Choi,Young Jai Choi,Younjung Jo###
(1617334, 1617340)
 The novel electronic state of the canted antiferromagnetic (AFM) insulator,strontium iridate (Sr2IrO4) has been well described by the spin-orbit-entangledisospin Jeff  1/2, but the role of isospin in transport phenomena remainspoorly understood.
Featurization successful!
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 2, ',', 0]

In
###Antiferromagnet-based spintronic functionality by controlling isospin domains in a layered perovskite iridate|Nara Lee,Eunjung Ko,Hwan Young Choi,Yun Jeong Hong,Muhammad Nauman,Woun Kang,Hyoung Joon Choi,Young Jai Choi,Younjung Jo###
(1617395, 1617395)
 In this study, antiferromagnet-based spintronicfunctionality is demonstrated by combining unique characteristics of theisospin state in Sr2IrO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 2, ',', 1]

Sr2IrO4
###Antiferromagnet-based spintronic functionality by controlling isospin domains in a layered perovskite iridate|Nara Lee,Eunjung Ko,Hwan Young Choi,Yun Jeong Hong,Muhammad Nauman,Woun Kang,Hyoung Joon Choi,Young Jai Choi,Younjung Jo###
(1617434, 1617438)
 In this study, antiferromagnet-based spintronicfunctionality is demonstrated by combining unique characteristics of theisospin state in Sr2IrO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 2, ',', 1]

As
###Antiferromagnet-based spintronic functionality by controlling isospin domains in a layered perovskite iridate|Nara Lee,Eunjung Ko,Hwan Young Choi,Yun Jeong Hong,Muhammad Nauman,Woun Kang,Hyoung Joon Choi,Young Jai Choi,Younjung Jo###
(1617637, 1617637)
As with this work that establishes a link between isospins and magnetotransportin strongly spin-orbit-coupled AFM<missing VAR> Sr2IrO4, the peculiar AMR effect provides abeneficial foundation for fundamental and applied research on AFM<missing VAR> spintronics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[269.0, 2, ',', 5]

F
###Antiferromagnet-based spintronic functionality by controlling isospin domains in a layered perovskite iridate|Nara Lee,Eunjung Ko,Hwan Young Choi,Yun Jeong Hong,Muhammad Nauman,Woun Kang,Hyoung Joon Choi,Young Jai Choi,Younjung Jo###
(1617673, 1617673)
As with this work that establishes a link between isospins and magnetotransportin strongly spin-orbit-coupled AFM<missing VAR> Sr2IrO4, the peculiar AMR effect provides abeneficial foundation for fundamental and applied research on AFM<missing VAR> spintronics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[305.0, 2, ',', 5]

Sr2IrO4
###Antiferromagnet-based spintronic functionality by controlling isospin domains in a layered perovskite iridate|Nara Lee,Eunjung Ko,Hwan Young Choi,Yun Jeong Hong,Muhammad Nauman,Woun Kang,Hyoung Joon Choi,Young Jai Choi,Younjung Jo###
(1617676, 1617680)
As with this work that establishes a link between isospins and magnetotransportin strongly spin-orbit-coupled AFM<missing VAR> Sr2IrO4, the peculiar AMR effect provides abeneficial foundation for fundamental and applied research on AFM<missing VAR> spintronics.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[308.0, 2, ',', 5]

F
###Antiferromagnet-based spintronic functionality by controlling isospin domains in a layered perovskite iridate|Nara Lee,Eunjung Ko,Hwan Young Choi,Yun Jeong Hong,Muhammad Nauman,Woun Kang,Hyoung Joon Choi,Young Jai Choi,Younjung Jo###
(1617715, 1617715)
As with this work that establishes a link between isospins and magnetotransportin strongly spin-orbit-coupled AFM<missing VAR> Sr2IrO4, the peculiar AMR effect provides abeneficial foundation for fundamental and applied research on AFM<missing VAR> spintronics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[347.0, 2, ',', 5]

S
###Current direction anisotropy of the spin Hall magnetoresistance in nickel ferrite thin films with bulk-like magnetic properties|Matthias Althammer,Amit Vikam Singh,Tobias Wimmer,Zbigniew Galazka,Hans Huebl,Matthias Opel,Rudolf Gross,Arunava Gupta###
(1617777, 1617777)
 We utilize spin Hall magnetoresistance (SMR) measurements to experimentallyinvestigate the pure spin current transport and magnetic properties of nickelferrite (NiFe2O4,NFO)/normal metal (NM) thin film heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[214.0, 50, '%', 3]

NiFe2O4
###Current direction anisotropy of the spin Hall magnetoresistance in nickel ferrite thin films with bulk-like magnetic properties|Matthias Althammer,Amit Vikam Singh,Tobias Wimmer,Zbigniew Galazka,Hans Huebl,Matthias Opel,Rudolf Gross,Arunava Gupta###
(1617815, 1617819)
 We utilize spin Hall magnetoresistance (SMR) measurements to experimentallyinvestigate the pure spin current transport and magnetic properties of nickelferrite (NiFe2O4,NFO)/normal metal (NM) thin film heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[172.0, 50, '%', 3]

O
###Current direction anisotropy of the spin Hall magnetoresistance in nickel ferrite thin films with bulk-like magnetic properties|Matthias Althammer,Amit Vikam Singh,Tobias Wimmer,Zbigniew Galazka,Hans Huebl,Matthias Opel,Rudolf Gross,Arunava Gupta###
(1617823, 1617823)
 We utilize spin Hall magnetoresistance (SMR) measurements to experimentallyinvestigate the pure spin current transport and magnetic properties of nickelferrite (NiFe2O4,NFO)/normal metal (NM) thin film heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[168.0, 50, '%', 3]

N
###Current direction anisotropy of the spin Hall magnetoresistance in nickel ferrite thin films with bulk-like magnetic properties|Matthias Althammer,Amit Vikam Singh,Tobias Wimmer,Zbigniew Galazka,Hans Huebl,Matthias Opel,Rudolf Gross,Arunava Gupta###
(1617831, 1617831)
 We utilize spin Hall magnetoresistance (SMR) measurements to experimentallyinvestigate the pure spin current transport and magnetic properties of nickelferrite (NiFe2O4,NFO)/normal metal (NM) thin film heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 50, '%', 3]

NFO
###Current direction anisotropy of the spin Hall magnetoresistance in nickel ferrite thin films with bulk-like magnetic properties|Matthias Althammer,Amit Vikam Singh,Tobias Wimmer,Zbigniew Galazka,Hans Huebl,Matthias Opel,Rudolf Gross,Arunava Gupta###
(1617853, 1617855)
 We use(001)-oriented NFO thin films grown on lattice-matched magnesium gallatesubstrates by pulsed laser deposition, which significantly improves themagnetic and structural properties of the ferrimagnetic insulator.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 50, '%', 2]

N
###Current direction anisotropy of the spin Hall magnetoresistance in nickel ferrite thin films with bulk-like magnetic properties|Matthias Althammer,Amit Vikam Singh,Tobias Wimmer,Zbigniew Galazka,Hans Huebl,Matthias Opel,Rudolf Gross,Arunava Gupta###
(1617913, 1617913)
 The NM<missing VAR> inour experiments is either Pt or Ta.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 50, '%', 1]

Pt
###Current direction anisotropy of the spin Hall magnetoresistance in nickel ferrite thin films with bulk-like magnetic properties|Matthias Althammer,Amit Vikam Singh,Tobias Wimmer,Zbigniew Galazka,Hans Huebl,Matthias Opel,Rudolf Gross,Arunava Gupta###
(1617927, 1617927)
 The NM<missing VAR> inour experiments is either Pt or Ta.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 50, '%', 1]

Ta
###Current direction anisotropy of the spin Hall magnetoresistance in nickel ferrite thin films with bulk-like magnetic properties|Matthias Althammer,Amit Vikam Singh,Tobias Wimmer,Zbigniew Galazka,Hans Huebl,Matthias Opel,Rudolf Gross,Arunava Gupta###
(1617931, 1617931)
 The NM<missing VAR> inour experiments is either Pt or Ta.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 50, '%', 1]

S
###Current direction anisotropy of the spin Hall magnetoresistance in nickel ferrite thin films with bulk-like magnetic properties|Matthias Althammer,Amit Vikam Singh,Tobias Wimmer,Zbigniew Galazka,Hans Huebl,Matthias Opel,Rudolf Gross,Arunava Gupta###
(1617944, 1617944)
 A comparison of the obtained SMR magnitudefor charge currents applied in the [100]- and [110]-direction of NFO yields achange of 50% for Pt at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 50, '%', 0]

NFO
###Current direction anisotropy of the spin Hall magnetoresistance in nickel ferrite thin films with bulk-like magnetic properties|Matthias Althammer,Amit Vikam Singh,Tobias Wimmer,Zbigniew Galazka,Hans Huebl,Matthias Opel,Rudolf Gross,Arunava Gupta###
(1617978, 1617980)
 A comparison of the obtained SMR magnitudefor charge currents applied in the [100]- and [110]-direction of NFO yields achange of 50% for Pt at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 50, '%', 0]

Pt
###Current direction anisotropy of the spin Hall magnetoresistance in nickel ferrite thin films with bulk-like magnetic properties|Matthias Althammer,Amit Vikam Singh,Tobias Wimmer,Zbigniew Galazka,Hans Huebl,Matthias Opel,Rudolf Gross,Arunava Gupta###
(1617996, 1617996)
 A comparison of the obtained SMR magnitudefor charge currents applied in the [100]- and [110]-direction of NFO yields achange of 50% for Pt at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 50, '%', 0]

S
###Current direction anisotropy of the spin Hall magnetoresistance in nickel ferrite thin films with bulk-like magnetic properties|Matthias Althammer,Amit Vikam Singh,Tobias Wimmer,Zbigniew Galazka,Hans Huebl,Matthias Opel,Rudolf Gross,Arunava Gupta###
(1618053, 1618053)
 We also investigated the temperaturedependence of this current direction anisotropy and find that it isqualitatively different for the conductivity and the SMR magnitude.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 50, '%', 1]

Pt
###Current direction anisotropy of the spin Hall magnetoresistance in nickel ferrite thin films with bulk-like magnetic properties|Matthias Althammer,Amit Vikam Singh,Tobias Wimmer,Zbigniew Galazka,Hans Huebl,Matthias Opel,Rudolf Gross,Arunava Gupta###
(1618121, 1618121)
 From ourresults we conclude that the observed current direction anisotropy mayoriginate from an anisotropy of the spin mixing conductance or of the spin Halleffect in these Pt and Ta layers, and/or additional spin-galvanic contributionsfrom the NFO/NM<missing VAR> interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 50, '%', 2]

Ta
###Current direction anisotropy of the spin Hall magnetoresistance in nickel ferrite thin films with bulk-like magnetic properties|Matthias Althammer,Amit Vikam Singh,Tobias Wimmer,Zbigniew Galazka,Hans Huebl,Matthias Opel,Rudolf Gross,Arunava Gupta###
(1618125, 1618125)
 From ourresults we conclude that the observed current direction anisotropy mayoriginate from an anisotropy of the spin mixing conductance or of the spin Halleffect in these Pt and Ta layers, and/or additional spin-galvanic contributionsfrom the NFO/NM<missing VAR> interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 50, '%', 2]

NFO/N
###Current direction anisotropy of the spin Hall magnetoresistance in nickel ferrite thin films with bulk-like magnetic properties|Matthias Althammer,Amit Vikam Singh,Tobias Wimmer,Zbigniew Galazka,Hans Huebl,Matthias Opel,Rudolf Gross,Arunava Gupta###
(1618147, 1618151)
 From ourresults we conclude that the observed current direction anisotropy mayoriginate from an anisotropy of the spin mixing conductance or of the spin Halleffect in these Pt and Ta layers, and/or additional spin-galvanic contributionsfrom the NFO/NM<missing VAR> interface.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[156.0, 50, '%', 2]

BaMn2
###Itinerant antiferromagnetic BaMn$_2$Pn$_2$'s showing both negative and positive magnetoresistances|Kim-Khuong Huynh,Takuma Ogasawara,Keita Kitahara,Yoichi Tanabe,Stephane Yu Matsushita,Time Tahara,Takanori Kida,Masayuki Hagiwara,Denis Arčon,Katsumi Tanigaki###
(1618561, 1618563)
Itinerant antiferromagnetic BaMn2Pn2s<missing VAR> showing both negative and positive magnetoresistances.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, -98, '%', 2]

BaMn2
###Itinerant antiferromagnetic BaMn$_2$Pn$_2$'s showing both negative and positive magnetoresistances|Kim-Khuong Huynh,Takuma Ogasawara,Keita Kitahara,Yoichi Tanabe,Stephane Yu Matsushita,Time Tahara,Takanori Kida,Masayuki Hagiwara,Denis Arčon,Katsumi Tanigaki###
(1618616, 1618618)
 We report the discovery of a novel giant magnetoresistance (GMR) phenomenonin a family of BaMn2Pn2 antiferromagnets (Pn stands for P, As, Sb,and Bi) with a parity-time symmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, -98, '%', 1]

P
###Itinerant antiferromagnetic BaMn$_2$Pn$_2$'s showing both negative and positive magnetoresistances|Kim-Khuong Huynh,Takuma Ogasawara,Keita Kitahara,Yoichi Tanabe,Stephane Yu Matsushita,Time Tahara,Takanori Kida,Masayuki Hagiwara,Denis Arčon,Katsumi Tanigaki###
(1618631, 1618631)
 We report the discovery of a novel giant magnetoresistance (GMR) phenomenonin a family of BaMn2Pn2 antiferromagnets (Pn stands for P, As, Sb,and Bi) with a parity-time symmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, -98, '%', 1]

As
###Itinerant antiferromagnetic BaMn$_2$Pn$_2$'s showing both negative and positive magnetoresistances|Kim-Khuong Huynh,Takuma Ogasawara,Keita Kitahara,Yoichi Tanabe,Stephane Yu Matsushita,Time Tahara,Takanori Kida,Masayuki Hagiwara,Denis Arčon,Katsumi Tanigaki###
(1618634, 1618634)
 We report the discovery of a novel giant magnetoresistance (GMR) phenomenonin a family of BaMn2Pn2 antiferromagnets (Pn stands for P, As, Sb,and Bi) with a parity-time symmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, -98, '%', 1]

Sb
###Itinerant antiferromagnetic BaMn$_2$Pn$_2$'s showing both negative and positive magnetoresistances|Kim-Khuong Huynh,Takuma Ogasawara,Keita Kitahara,Yoichi Tanabe,Stephane Yu Matsushita,Time Tahara,Takanori Kida,Masayuki Hagiwara,Denis Arčon,Katsumi Tanigaki###
(1618637, 1618637)
 We report the discovery of a novel giant magnetoresistance (GMR) phenomenonin a family of BaMn2Pn2 antiferromagnets (Pn stands for P, As, Sb,and Bi) with a parity-time symmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, -98, '%', 1]

Bi
###Itinerant antiferromagnetic BaMn$_2$Pn$_2$'s showing both negative and positive magnetoresistances|Kim-Khuong Huynh,Takuma Ogasawara,Keita Kitahara,Yoichi Tanabe,Stephane Yu Matsushita,Time Tahara,Takanori Kida,Masayuki Hagiwara,Denis Arčon,Katsumi Tanigaki###
(1618643, 1618643)
 We report the discovery of a novel giant magnetoresistance (GMR) phenomenonin a family of BaMn2Pn2 antiferromagnets (Pn stands for P, As, Sb,and Bi) with a parity-time symmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, -98, '%', 1]

H
###Itinerant antiferromagnetic BaMn$_2$Pn$_2$'s showing both negative and positive magnetoresistances|Kim-Khuong Huynh,Takuma Ogasawara,Keita Kitahara,Yoichi Tanabe,Stephane Yu Matsushita,Time Tahara,Takanori Kida,Masayuki Hagiwara,Denis Arčon,Katsumi Tanigaki###
(1618686, 1618686)
 The resistivities of these materials arereduced by 60 times in magnetic fields (vecHs), thus yielding the GMRof about -98%.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, -98, '%', 0]

(SOC)
###Itinerant antiferromagnetic BaMn$_2$Pn$_2$'s showing both negative and positive magnetoresistances|Kim-Khuong Huynh,Takuma Ogasawara,Keita Kitahara,Yoichi Tanabe,Stephane Yu Matsushita,Time Tahara,Takanori Kida,Masayuki Hagiwara,Denis Arčon,Katsumi Tanigaki###
(1618751, 1618755)
 The GMR changes systematically along with the Pn elements,hinting that its origin is the spin orbit coupling (SOC) and/or d-p orbitalhybridization.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, -98, '%', 1]

H
###Itinerant antiferromagnetic BaMn$_2$Pn$_2$'s showing both negative and positive magnetoresistances|Kim-Khuong Huynh,Takuma Ogasawara,Keita Kitahara,Yoichi Tanabe,Stephane Yu Matsushita,Time Tahara,Takanori Kida,Masayuki Hagiwara,Denis Arčon,Katsumi Tanigaki###
(1618816, 1618816)
 A positive MR component emerging on top of the negative GMR atlow temperatures suggests an orbital-sensitive magnetotransport as vecHsuppresses the conduction of the electron-like carriers in the d<missing VAR>-like bandbut enhances those of hole-like ones in the d-p hybridized band.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, -98, '%', 2]

H
###Itinerant antiferromagnetic BaMn$_2$Pn$_2$'s showing both negative and positive magnetoresistances|Kim-Khuong Huynh,Takuma Ogasawara,Keita Kitahara,Yoichi Tanabe,Stephane Yu Matsushita,Time Tahara,Takanori Kida,Masayuki Hagiwara,Denis Arčon,Katsumi Tanigaki###
(1618939, 1618939)
 Theanisotropy of the GMR reveals that the electrical conductivity is extremelysensitive to the minute changes in the direction of the antiferromagneticmoments induced by the parity-time breaking vecH, which seems to beassociated with a magnetoelectric effect in the dynamic regime of conductionelectrons.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[233.0, -98, '%', 3]

B
###Itinerant antiferromagnetic BaMn$_2$Pn$_2$'s showing both negative and positive magnetoresistances|Kim-Khuong Huynh,Takuma Ogasawara,Keita Kitahara,Yoichi Tanabe,Stephane Yu Matsushita,Time Tahara,Takanori Kida,Masayuki Hagiwara,Denis Arčon,Katsumi Tanigaki###
(1619006, 1619006)
 We attribute the observed GMR to the non-trivial low energy band ofBMPns, which is governed by the parity-time symmetry and an magnetichexadecapole ordering.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[300.0, -98, '%', 4]

C
###Room-temperature Low-field Colossal Magneto-resistance in Double-perovskite Manganite|S. Yamada,N. Abe,H. Sagayama,K. Ogawa,T. Yamagami,T. Arima###
(1619110, 1619110)
 The gigantic decrease of resistance by an applied magnetic field, which isoften referred to as colossal magnetoresistance (CMR), has been an attractingphenomenon in strongly correlated electron systems.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[260.0, 2, 'T', 4],[263.0, 300, 'K', 4],[348.0, 1, 'K', 5],[351.0, 0.5, 'T', 5]

C
###Room-temperature Low-field Colossal Magneto-resistance in Double-perovskite Manganite|S. Yamada,N. Abe,H. Sagayama,K. Ogawa,T. Yamagami,T. Arima###
(1619144, 1619144)
 The discovery of CMR inmanganese oxide compounds has developed the science of strong coupling amongcharge, orbital, and spin degrees of freedom.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[226.0, 2, 'T', 3],[229.0, 300, 'K', 3],[314.0, 1, 'K', 4],[317.0, 0.5, 'T', 4]

C
###Room-temperature Low-field Colossal Magneto-resistance in Double-perovskite Manganite|S. Yamada,N. Abe,H. Sagayama,K. Ogawa,T. Yamagami,T. Arima###
(1619191, 1619191)
 CMR is also attracting scientistsfrom the viewpoint of possible applications to sensors, memories, and so on.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 2, 'T', 2],[182.0, 300, 'K', 2],[267.0, 1, 'K', 3],[270.0, 0.5, 'T', 3]

C
###Room-temperature Low-field Colossal Magneto-resistance in Double-perovskite Manganite|S. Yamada,N. Abe,H. Sagayama,K. Ogawa,T. Yamagami,T. Arima###
(1619241, 1619241)
However, no application using CMR effect has been achieved so far, partlybecause the CMR materials which satisfy all of the required conditions for theapplication, namely, high operating temperature, low operating magnetic field,and sharp resistive change, have not been discovered.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 2, 'T', 1],[132.0, 300, 'K', 1],[217.0, 1, 'K', 2],[220.0, 0.5, 'T', 2]

C
###Room-temperature Low-field Colossal Magneto-resistance in Double-perovskite Manganite|S. Yamada,N. Abe,H. Sagayama,K. Ogawa,T. Yamagami,T. Arima###
(1619265, 1619265)
However, no application using CMR effect has been achieved so far, partlybecause the CMR materials which satisfy all of the required conditions for theapplication, namely, high operating temperature, low operating magnetic field,and sharp resistive change, have not been discovered.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 2, 'T', 1],[108.0, 300, 'K', 1],[193.0, 1, 'K', 2],[196.0, 0.5, 'T', 2]

NdBaMn2O6
###Room-temperature Low-field Colossal Magneto-resistance in Double-perovskite Manganite|S. Yamada,N. Abe,H. Sagayama,K. Ogawa,T. Yamagami,T. Arima###
(1619385, 1619390)
 Here we report aresistance change of more than two-orders of magnitude at a magnetic fieldlower than 2 T near 300 K in an A-site ordered NdBaMn2O6 crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 2, 'T', 0],[12.0, 300, 'K', 0],[68.0, 1, 'K', 1],[71.0, 0.5, 'T', 1]

C
###Room-temperature Low-field Colossal Magneto-resistance in Double-perovskite Manganite|S. Yamada,N. Abe,H. Sagayama,K. Ogawa,T. Yamagami,T. Arima###
(1619470, 1619470)
 TheCMR is ascribed to the melting of the charge ordering.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 2, 'T', 2],[97.0, 300, 'K', 2],[12.0, 1, 'K', 1],[9.0, 0.5, 'T', 1]

B
###Room-temperature Low-field Colossal Magneto-resistance in Double-perovskite Manganite|S. Yamada,N. Abe,H. Sagayama,K. Ogawa,T. Yamagami,T. Arima###
(1619510, 1619510)
 The entropy change whichis estimated from the B-T<missing VAR> phase diagram is smaller than what is expected forthe charge and orbital ordering.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 2, 'T', 3],[137.0, 300, 'K', 3],[52.0, 1, 'K', 2],[49.0, 0.5, 'T', 2]

Mn
###Room-temperature Low-field Colossal Magneto-resistance in Double-perovskite Manganite|S. Yamada,N. Abe,H. Sagayama,K. Ogawa,T. Yamagami,T. Arima###
(1619581, 1619581)
 The suppression of the entropy change isattributable to the loss of the short range ferromagnetic fluctuation of Mnspin moments, which an important key of the high temperature and low magneticfield CMR effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[211.0, 2, 'T', 4],[208.0, 300, 'K', 4],[123.0, 1, 'K', 3],[120.0, 0.5, 'T', 3]

C
###Room-temperature Low-field Colossal Magneto-resistance in Double-perovskite Manganite|S. Yamada,N. Abe,H. Sagayama,K. Ogawa,T. Yamagami,T. Arima###
(1619614, 1619614)
 The suppression of the entropy change isattributable to the loss of the short range ferromagnetic fluctuation of Mnspin moments, which an important key of the high temperature and low magneticfield CMR effect.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[244.0, 2, 'T', 4],[241.0, 300, 'K', 4],[156.0, 1, 'K', 3],[153.0, 0.5, 'T', 3]

B
###Composable Probabilistic Inference Networks Using MRAM-based Stochastic Neurons|Ramtin Zand,Kerem Y. Camsari,Supriyo Datta,Ronald F. DeMara###
(1619712, 1619712)
 Magnetoresistive random access memory (MRAM) technologies with thermallyunstable nanomagnets are leveraged to develop an intrinsic stochastic neuron asa building block for restricted Boltzmann machines (R<missing VAR>BMs) to form deep beliefnetworks (D<missing VAR>BNs).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[267.0, 14, 'nm', 5],[291.0, 0.8, 'V', 5],[358.0, 5, '%', 6],[393.0, 2.5, '%', 7]

B
###Composable Probabilistic Inference Networks Using MRAM-based Stochastic Neurons|Ramtin Zand,Kerem Y. Camsari,Supriyo Datta,Ronald F. DeMara###
(1619729, 1619729)
 Magnetoresistive random access memory (MRAM) technologies with thermallyunstable nanomagnets are leveraged to develop an intrinsic stochastic neuron asa building block for restricted Boltzmann machines (R<missing VAR>BMs) to form deep beliefnetworks (D<missing VAR>BNs).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[250.0, 14, 'nm', 5],[274.0, 0.8, 'V', 5],[341.0, 5, '%', 6],[376.0, 2.5, '%', 7]

PIN
###Composable Probabilistic Inference Networks Using MRAM-based Stochastic Neurons|Ramtin Zand,Kerem Y. Camsari,Supriyo Datta,Ronald F. DeMara###
(1619811, 1619813)
 Aprobabilistic inference network simulator (PIN-Sim) is developed to realize acircuit-level model of an RBM utilizing resistive crossbar arrays along withdifferential amplifiers to implement the positive and negative weight values.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 14, 'nm', 2],[190.0, 0.8, 'V', 2],[257.0, 5, '%', 3],[292.0, 2.5, '%', 4]

PIN
###Composable Probabilistic Inference Networks Using MRAM-based Stochastic Neurons|Ramtin Zand,Kerem Y. Camsari,Supriyo Datta,Ronald F. DeMara###
(1619880, 1619882)
The PIN-Sim is composed of five main blocks to train a D<missing VAR>BN, evaluate itsaccuracy, and measure its power consumption.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 14, 'nm', 1],[121.0, 0.8, 'V', 1],[188.0, 5, '%', 2],[223.0, 2.5, '%', 3]

BN
###Composable Probabilistic Inference Networks Using MRAM-based Stochastic Neurons|Ramtin Zand,Kerem Y. Camsari,Supriyo Datta,Ronald F. DeMara###
(1619905, 1619906)
The PIN-Sim is composed of five main blocks to train a D<missing VAR>BN, evaluate itsaccuracy, and measure its power consumption.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 14, 'nm', 1],[97.0, 0.8, 'V', 1],[164.0, 5, '%', 2],[199.0, 2.5, '%', 3]

NIS
###Composable Probabilistic Inference Networks Using MRAM-based Stochastic Neurons|Ramtin Zand,Kerem Y. Camsari,Supriyo Datta,Ronald F. DeMara###
(1619931, 1619933)
 The M<missing VAR>NIST<missing VAR> dataset is leveraged toinvestigate the energy and accuracy tradeoffs of seven distinct networktopologies in SPICE<missing VAR> using the 14nm HP-FinFET technology library with thenominal voltage of 0.8V, in which an MRAM<missing VAR>-based neuron is used as theactivation function.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 14, 'nm', 0],[70.0, 0.8, 'V', 0],[137.0, 5, '%', 1],[172.0, 2.5, '%', 2]

SPIC
###Composable Probabilistic Inference Networks Using MRAM-based Stochastic Neurons|Ramtin Zand,Kerem Y. Camsari,Supriyo Datta,Ronald F. DeMara###
(1619970, 1619973)
 The M<missing VAR>NIST<missing VAR> dataset is leveraged toinvestigate the energy and accuracy tradeoffs of seven distinct networktopologies in SPICE<missing VAR> using the 14nm HP-FinFET technology library with thenominal voltage of 0.8V, in which an MRAM<missing VAR>-based neuron is used as theactivation function.
Featurization terminated normally.
0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 14, 'nm', 0],[30.0, 0.8, 'V', 0],[97.0, 5, '%', 1],[132.0, 2.5, '%', 2]

HP
###Composable Probabilistic Inference Networks Using MRAM-based Stochastic Neurons|Ramtin Zand,Kerem Y. Camsari,Supriyo Datta,Ronald F. DeMara###
(1619981, 1619982)
 The M<missing VAR>NIST<missing VAR> dataset is leveraged toinvestigate the energy and accuracy tradeoffs of seven distinct networktopologies in SPICE<missing VAR> using the 14nm HP-FinFET technology library with thenominal voltage of 0.8V, in which an MRAM<missing VAR>-based neuron is used as theactivation function.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 14, 'nm', 0],[21.0, 0.8, 'V', 0],[88.0, 5, '%', 1],[123.0, 2.5, '%', 2]

F
###Composable Probabilistic Inference Networks Using MRAM-based Stochastic Neurons|Ramtin Zand,Kerem Y. Camsari,Supriyo Datta,Ronald F. DeMara###
(1619985, 1619985)
 The M<missing VAR>NIST<missing VAR> dataset is leveraged toinvestigate the energy and accuracy tradeoffs of seven distinct networktopologies in SPICE<missing VAR> using the 14nm HP-FinFET technology library with thenominal voltage of 0.8V, in which an MRAM<missing VAR>-based neuron is used as theactivation function.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 14, 'nm', 0],[18.0, 0.8, 'V', 0],[85.0, 5, '%', 1],[120.0, 2.5, '%', 2]

BN
###Composable Probabilistic Inference Networks Using MRAM-based Stochastic Neurons|Ramtin Zand,Kerem Y. Camsari,Supriyo Datta,Ronald F. DeMara###
(1620126, 1620127)
 The error rates can be reduced to 2.5% byusing a 784times500times500times500times10 D<missing VAR>BN at the cost ofsim10times higher energy consumption and significant area overhead.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 14, 'nm', 2],[123.0, 0.8, 'V', 2],[56.0, 5, '%', 1],[21.0, 2.5, '%', 0]

PIN
###Composable Probabilistic Inference Networks Using MRAM-based Stochastic Neurons|Ramtin Zand,Kerem Y. Camsari,Supriyo Datta,Ronald F. DeMara###
(1620198, 1620200)
Finally, the effects of specific hardware-level parameters on power dissipationand accuracy tradeoffs are identified via the developed PIN-Sim framework.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[219.0, 14, 'nm', 3],[195.0, 0.8, 'V', 3],[128.0, 5, '%', 2],[93.0, 2.5, '%', 1]

P
###Application of an extended van der Pauw method to anisotropic magnetoresistance measurements of ferromagnetic films|Movaffaq Kateb,Egill Jacobsen,Snorri Ingvarsson###
(1620271, 1620271)
 We demonstrate anisotropic resistivity measurements using the extended vander Pauw (vdP) method in ferromagnetic Ni80Fe20 (Py) films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[535.0, 100, 'nm', 10]

Ni80Fe20
###Application of an extended van der Pauw method to anisotropic magnetoresistance measurements of ferromagnetic films|Movaffaq Kateb,Egill Jacobsen,Snorri Ingvarsson###
(1620280, 1620283)
 We demonstrate anisotropic resistivity measurements using the extended vander Pauw (vdP) method in ferromagnetic Ni80Fe20 (Py) films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[523.0, 100, 'nm', 10]

P
###Application of an extended van der Pauw method to anisotropic magnetoresistance measurements of ferromagnetic films|Movaffaq Kateb,Egill Jacobsen,Snorri Ingvarsson###
(1620326, 1620326)
 We apply it tomeasure anisotropic magnetoresistance (AMR) and compare the results of the vdPmethod with the more conventional Hall-bar method along the hard and easy axisof the film and show that the vdP method gives more reliable AMR result.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[480.0, 100, 'nm', 9]

P
###Application of an extended van der Pauw method to anisotropic magnetoresistance measurements of ferromagnetic films|Movaffaq Kateb,Egill Jacobsen,Snorri Ingvarsson###
(1620373, 1620373)
 We apply it tomeasure anisotropic magnetoresistance (AMR) and compare the results of the vdPmethod with the more conventional Hall-bar method along the hard and easy axisof the film and show that the vdP method gives more reliable AMR result.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[433.0, 100, 'nm', 9]

P
###Application of an extended van der Pauw method to anisotropic magnetoresistance measurements of ferromagnetic films|Movaffaq Kateb,Egill Jacobsen,Snorri Ingvarsson###
(1620442, 1620442)
 Further, we applied the vdP method to study AMR in a series of Pyfilms with thicknesses ranging between 10-250 nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[364.0, 100, 'nm', 7]

MnBi2Te4
###Spin scattering and noncollinear spin structure-induced intrinsic anomalous Hall effect in antiferromagnetic topological insulator $\mathrm{MnBi_2Te_4}$|Seng Huat Lee,Yanglin Zhu,Yu Wang,Leixin Miao,Timothy Pillsbury,Susan Kempinger,David Graf,Nasim Alem,Cui-Zu Chang,Nitin Samarth,Zhiqiang Mao###
(1620848, 1620852)
Spin scattering and noncollinear spin structure-induced intrinsic anomalous Hall effect in antiferromagnetic topological insulator mathrmMnBi2Te4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[291.0, 25, 'K', 5]

MnBi2Te4
###Spin scattering and noncollinear spin structure-induced intrinsic anomalous Hall effect in antiferromagnetic topological insulator $\mathrm{MnBi_2Te_4}$|Seng Huat Lee,Yanglin Zhu,Yu Wang,Leixin Miao,Timothy Pillsbury,Susan Kempinger,David Graf,Nasim Alem,Cui-Zu Chang,Nitin Samarth,Zhiqiang Mao###
(1620856, 1620860)
 mathrmMnBi2Te4 has recently been established as an intrinsicantiferromagnetic (AFM) topological insulator and predicted to be an idealplatform to realize quantum anomalous Hall (Q<missing VAR>AH) insulator and axion insulatorstates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[283.0, 25, 'K', 4]

F
###Spin scattering and noncollinear spin structure-induced intrinsic anomalous Hall effect in antiferromagnetic topological insulator $\mathrm{MnBi_2Te_4}$|Seng Huat Lee,Yanglin Zhu,Yu Wang,Leixin Miao,Timothy Pillsbury,Susan Kempinger,David Graf,Nasim Alem,Cui-Zu Chang,Nitin Samarth,Zhiqiang Mao###
(1620881, 1620881)
 mathrmMnBi2Te4 has recently been established as an intrinsicantiferromagnetic (AFM) topological insulator and predicted to be an idealplatform to realize quantum anomalous Hall (Q<missing VAR>AH) insulator and axion insulatorstates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[262.0, 25, 'K', 4]

H
###Spin scattering and noncollinear spin structure-induced intrinsic anomalous Hall effect in antiferromagnetic topological insulator $\mathrm{MnBi_2Te_4}$|Seng Huat Lee,Yanglin Zhu,Yu Wang,Leixin Miao,Timothy Pillsbury,Susan Kempinger,David Graf,Nasim Alem,Cui-Zu Chang,Nitin Samarth,Zhiqiang Mao###
(1620917, 1620917)
 mathrmMnBi2Te4 has recently been established as an intrinsicantiferromagnetic (AFM) topological insulator and predicted to be an idealplatform to realize quantum anomalous Hall (Q<missing VAR>AH) insulator and axion insulatorstates.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[226.0, 25, 'K', 4]

N
###Spin scattering and noncollinear spin structure-induced intrinsic anomalous Hall effect in antiferromagnetic topological insulator $\mathrm{MnBi_2Te_4}$|Seng Huat Lee,Yanglin Zhu,Yu Wang,Leixin Miao,Timothy Pillsbury,Susan Kempinger,David Graf,Nasim Alem,Cui-Zu Chang,Nitin Samarth,Zhiqiang Mao###
(1621054, 1621054)
 We also observed remarkablenegative magnetoresistance under arbitrary field orientation below and abovethe Neel temperature (T<missing VAR>N), providing clear evidence for strong spinfluctuation-driven spin scattering in both the AFM<missing VAR> and paramagnetic states.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 25, 'K', 1]

F
###Spin scattering and noncollinear spin structure-induced intrinsic anomalous Hall effect in antiferromagnetic topological insulator $\mathrm{MnBi_2Te_4}$|Seng Huat Lee,Yanglin Zhu,Yu Wang,Leixin Miao,Timothy Pillsbury,Susan Kempinger,David Graf,Nasim Alem,Cui-Zu Chang,Nitin Samarth,Zhiqiang Mao###
(1621086, 1621086)
 We also observed remarkablenegative magnetoresistance under arbitrary field orientation below and abovethe Neel temperature (T<missing VAR>N), providing clear evidence for strong spinfluctuation-driven spin scattering in both the AFM<missing VAR> and paramagnetic states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 25, 'K', 1]

V
###Spin scattering and noncollinear spin structure-induced intrinsic anomalous Hall effect in antiferromagnetic topological insulator $\mathrm{MnBi_2Te_4}$|Seng Huat Lee,Yanglin Zhu,Yu Wang,Leixin Miao,Timothy Pillsbury,Susan Kempinger,David Graf,Nasim Alem,Cui-Zu Chang,Nitin Samarth,Zhiqiang Mao###
(1621126, 1621126)
Further, we found that the nontrivial surface state opens a large gap (85 meV)even at temperatures far above T<missing VAR>N  25K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 25, 'K', 0]

N
###Spin scattering and noncollinear spin structure-induced intrinsic anomalous Hall effect in antiferromagnetic topological insulator $\mathrm{MnBi_2Te_4}$|Seng Huat Lee,Yanglin Zhu,Yu Wang,Leixin Miao,Timothy Pillsbury,Susan Kempinger,David Graf,Nasim Alem,Cui-Zu Chang,Nitin Samarth,Zhiqiang Mao###
(1621141, 1621141)
Further, we found that the nontrivial surface state opens a large gap (85 meV)even at temperatures far above T<missing VAR>N  25K.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 25, 'K', 0]

MnBi2Te4
###Spin scattering and noncollinear spin structure-induced intrinsic anomalous Hall effect in antiferromagnetic topological insulator $\mathrm{MnBi_2Te_4}$|Seng Huat Lee,Yanglin Zhu,Yu Wang,Leixin Miao,Timothy Pillsbury,Susan Kempinger,David Graf,Nasim Alem,Cui-Zu Chang,Nitin Samarth,Zhiqiang Mao###
(1621166, 1621170)
 These findings demonstrate that thebulk band structure of mathrmMnBi2Te4 is strongly coupled to themagnetic structure and that a net Berry curvature in momentum space can becreated in a canted AFM<missing VAR> state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 25, 'K', 1]

F
###Spin scattering and noncollinear spin structure-induced intrinsic anomalous Hall effect in antiferromagnetic topological insulator $\mathrm{MnBi_2Te_4}$|Seng Huat Lee,Yanglin Zhu,Yu Wang,Leixin Miao,Timothy Pillsbury,Susan Kempinger,David Graf,Nasim Alem,Cui-Zu Chang,Nitin Samarth,Zhiqiang Mao###
(1621219, 1621219)
 These findings demonstrate that thebulk band structure of mathrmMnBi2Te4 is strongly coupled to themagnetic structure and that a net Berry curvature in momentum space can becreated in a canted AFM<missing VAR> state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 25, 'K', 1]

In
###Spin scattering and noncollinear spin structure-induced intrinsic anomalous Hall effect in antiferromagnetic topological insulator $\mathrm{MnBi_2Te_4}$|Seng Huat Lee,Yanglin Zhu,Yu Wang,Leixin Miao,Timothy Pillsbury,Susan Kempinger,David Graf,Nasim Alem,Cui-Zu Chang,Nitin Samarth,Zhiqiang Mao###
(1621225, 1621225)
 In addition, our results imply that the gapopening in the surface states is intrinsic, likely caused by the strong spinfluctuations near the surface layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 25, 'K', 2]

In
###Scaling of intrinsic domain wall magneto-resistance with confinement in electromigrated nanocontacts|Robert M. Reeve,André Loescher,Hamidreza Kazemi,Bertrand Dupé,Thomas Winkler,Daniel Schönke,Jun Miao,Kai Litzius,Nicholas Sedlmayr,Imke Schneider,Jairo Sinova,Sebastian Eggert,Mathias Kläui###
(1621315, 1621315)
 In this work we study the evolution of intrinsic domain wallmagnetoresistance (DWMR) with domain wall confinement.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Scaling of intrinsic domain wall magneto-resistance with confinement in electromigrated nanocontacts|Robert M. Reeve,André Loescher,Hamidreza Kazemi,Bertrand Dupé,Thomas Winkler,Daniel Schönke,Jun Miao,Kai Litzius,Nicholas Sedlmayr,Imke Schneider,Jairo Sinova,Sebastian Eggert,Mathias Kläui###
(1621555, 1621555)
 In this sizerange, an intrinsic positive MR is found, which dominates over anisotropic MR,as confirmed by comparison to micromagnetic simulations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Scaling of intrinsic domain wall magneto-resistance with confinement in electromigrated nanocontacts|Robert M. Reeve,André Loescher,Hamidreza Kazemi,Bertrand Dupé,Thomas Winkler,Daniel Schönke,Jun Miao,Kai Litzius,Nicholas Sedlmayr,Imke Schneider,Jairo Sinova,Sebastian Eggert,Mathias Kläui###
(1621643, 1621643)
 Moreover, the MR isfound to scale monotonically with the size of the domain wall, deltaD<missing VAR>W,as 1/deltaDWb, with b<missing VAR>2.31pm 0.39 .
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Observation of planar Hall effect in Type-II Dirac semimetal PtTe$_{2}$|Amit Vashist,R. K. Singh,Neha Wadehra,S. Chakraverty,Yogesh Singh###
(1621728, 1621729)
Observation of planar Hall effect in Type-II Dirac semimetal PtTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PtTe2
###Observation of planar Hall effect in Type-II Dirac semimetal PtTe$_{2}$|Amit Vashist,R. K. Singh,Neha Wadehra,S. Chakraverty,Yogesh Singh###
(1621735, 1621737)
Observation of planar Hall effect in Type-II Dirac semimetal PtTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PH
###Observation of planar Hall effect in Type-II Dirac semimetal PtTe$_{2}$|Amit Vashist,R. K. Singh,Neha Wadehra,S. Chakraverty,Yogesh Singh###
(1621759, 1621760)
 We report experimental observation of the Planar Hall effect (PHE) in atype-II Dirac semimetal PtTe2.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Observation of planar Hall effect in Type-II Dirac semimetal PtTe$_{2}$|Amit Vashist,R. K. Singh,Neha Wadehra,S. Chakraverty,Yogesh Singh###
(1621771, 1621772)
 We report experimental observation of the Planar Hall effect (PHE) in atype-II Dirac semimetal PtTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PtTe2
###Observation of planar Hall effect in Type-II Dirac semimetal PtTe$_{2}$|Amit Vashist,R. K. Singh,Neha Wadehra,S. Chakraverty,Yogesh Singh###
(1621778, 1621780)
 We report experimental observation of the Planar Hall effect (PHE) in atype-II Dirac semimetal PtTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PtTe2
###Observation of planar Hall effect in Type-II Dirac semimetal PtTe$_{2}$|Amit Vashist,R. K. Singh,Neha Wadehra,S. Chakraverty,Yogesh Singh###
(1621808, 1621810)
 This unusual Hall effect is not expected innonmagnetc materials such as PtTe2, and has been observed previously mostlyin magnetic semiconductors or metals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PH
###Observation of planar Hall effect in Type-II Dirac semimetal PtTe$_{2}$|Amit Vashist,R. K. Singh,Neha Wadehra,S. Chakraverty,Yogesh Singh###
(1621842, 1621843)
 Remarkably, the PHE<missing VAR> in PtTe2 can beobserved up to temperatures near room temperature which indicates therobustness of the effect.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PtTe2
###Observation of planar Hall effect in Type-II Dirac semimetal PtTe$_{2}$|Amit Vashist,R. K. Singh,Neha Wadehra,S. Chakraverty,Yogesh Singh###
(1621848, 1621850)
 Remarkably, the PHE<missing VAR> in PtTe2 can beobserved up to temperatures near room temperature which indicates therobustness of the effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PH
###Observation of planar Hall effect in Type-II Dirac semimetal PtTe$_{2}$|Amit Vashist,R. K. Singh,Neha Wadehra,S. Chakraverty,Yogesh Singh###
(1622027, 1622028)
 Additionally, the PHE<missing VAR> is observed for PtTe2even though the Dirac node is approx 0.8e<missing VAR>V away from the Fermi level.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PtTe2
###Observation of planar Hall effect in Type-II Dirac semimetal PtTe$_{2}$|Amit Vashist,R. K. Singh,Neha Wadehra,S. Chakraverty,Yogesh Singh###
(1622037, 1622039)
 Additionally, the PHE<missing VAR> is observed for PtTe2even though the Dirac node is approx 0.8e<missing VAR>V away from the Fermi level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Observation of planar Hall effect in Type-II Dirac semimetal PtTe$_{2}$|Amit Vashist,R. K. Singh,Neha Wadehra,S. Chakraverty,Yogesh Singh###
(1622058, 1622058)
 Additionally, the PHE<missing VAR> is observed for PtTe2even though the Dirac node is approx 0.8e<missing VAR>V away from the Fermi level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PH
###Observation of planar Hall effect in Type-II Dirac semimetal PtTe$_{2}$|Amit Vashist,R. K. Singh,Neha Wadehra,S. Chakraverty,Yogesh Singh###
(1622084, 1622085)
 Thusour results strongly indicate that PHE<missing VAR> can be used as a crucial transportdiagnostic for topological character even for band structures with Dirac nodesslightly away from the Fermi energy.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(SOC)
###Interfacial Spin-Orbit Coupling: New Platform for Superconducting Spintronics|Isidoro Martínez,Petra Högl,César González-Ruano,Juan Pedro Cascales,Coriolan Tiusan,Yuan Lu,Michel Hehn,Alex Matos-Abiague,Jaroslav Fabian,Igor Žutić,Farkhad G. Aliev###
(1622172, 1622176)
 Spin-orbit coupling (SOC) is a key interaction in spintronics, allowing anelectrical control of spin or magnetization and, vice versa, a magnetic controlof electrical current.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SOC
###Interfacial Spin-Orbit Coupling: New Platform for Superconducting Spintronics|Isidoro Martínez,Petra Högl,César González-Ruano,Juan Pedro Cascales,Coriolan Tiusan,Yuan Lu,Michel Hehn,Alex Matos-Abiague,Jaroslav Fabian,Igor Žutić,Farkhad G. Aliev###
(1622250, 1622252)
 However, recent advances have revealed much broaderimplications of SOC that is also central to the design of topological states,including topological insulators, skyrmions, and Majorana fermions, or toovercome the exclusion of two-dimensional ferro-magnetism expected from theMermin-Wagner theorem.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SOC
###Interfacial Spin-Orbit Coupling: New Platform for Superconducting Spintronics|Isidoro Martínez,Petra Högl,César González-Ruano,Juan Pedro Cascales,Coriolan Tiusan,Yuan Lu,Michel Hehn,Alex Matos-Abiague,Jaroslav Fabian,Igor Žutić,Farkhad G. Aliev###
(1622328, 1622330)
 SOC and the resulting emergent interfacial spin-orbitfields are simply realized in junctions through structural inversion asymmetry,while the anisotropy in magnetoresistance (MR) allows for their experimentaldetection.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Interfacial Spin-Orbit Coupling: New Platform for Superconducting Spintronics|Isidoro Martínez,Petra Högl,César González-Ruano,Juan Pedro Cascales,Coriolan Tiusan,Yuan Lu,Michel Hehn,Alex Matos-Abiague,Jaroslav Fabian,Igor Žutić,Farkhad G. Aliev###
(1622414, 1622415)
 Surprisingly, we demonstrate that an all-epitaxialferromagnet/MgO/metal junction with only a negligible MR anisotropy undergoes aremarkable transformation below the superconducting transition temperature ofthe metal.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SOC
###Interfacial Spin-Orbit Coupling: New Platform for Superconducting Spintronics|Isidoro Martínez,Petra Högl,César González-Ruano,Juan Pedro Cascales,Coriolan Tiusan,Yuan Lu,Michel Hehn,Alex Matos-Abiague,Jaroslav Fabian,Igor Žutić,Farkhad G. Aliev###
(1622542, 1622544)
 Our findings call for revisiting the role of SOC in other systemswhich, even when it seems negligible in the normal state, could have a profoundinfluence on the superconducting response.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TaAs
###Optical Signatures of the Chiral Anomaly in Mirror-Symmetric Weyl Semimetals|Aaron Hui,Yi Zhang,Eun-Ah Kim###
(1622930, 1622931)
 Specifically for mirror-symmetric Weyl semimetals such as TaAs andNbAs, including the Zeeman interaction at B approx 10T<missing VAR>, we predict an IR<missing VAR>reflectivity peak will develop with an mathbfE<missing VAR>textIR<missing VAR>cdotmathbfBdependence.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbAs
###Optical Signatures of the Chiral Anomaly in Mirror-Symmetric Weyl Semimetals|Aaron Hui,Yi Zhang,Eun-Ah Kim###
(1622936, 1622937)
 Specifically for mirror-symmetric Weyl semimetals such as TaAs andNbAs, including the Zeeman interaction at B approx 10T<missing VAR>, we predict an IR<missing VAR>reflectivity peak will develop with an mathbfE<missing VAR>textIR<missing VAR>cdotmathbfBdependence.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Optical Signatures of the Chiral Anomaly in Mirror-Symmetric Weyl Semimetals|Aaron Hui,Yi Zhang,Eun-Ah Kim###
(1622950, 1622950)
 Specifically for mirror-symmetric Weyl semimetals such as TaAs andNbAs, including the Zeeman interaction at B approx 10T<missing VAR>, we predict an IR<missing VAR>reflectivity peak will develop with an mathbfE<missing VAR>textIR<missing VAR>cdotmathbfBdependence.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Optical Signatures of the Chiral Anomaly in Mirror-Symmetric Weyl Semimetals|Aaron Hui,Yi Zhang,Eun-Ah Kim###
(1622964, 1622964)
 Specifically for mirror-symmetric Weyl semimetals such as TaAs andNbAs, including the Zeeman interaction at B approx 10T<missing VAR>, we predict an IR<missing VAR>reflectivity peak will develop with an mathbfE<missing VAR>textIR<missing VAR>cdotmathbfBdependence.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Optical Signatures of the Chiral Anomaly in Mirror-Symmetric Weyl Semimetals|Aaron Hui,Yi Zhang,Eun-Ah Kim###
(1622983, 1622983)
 Specifically for mirror-symmetric Weyl semimetals such as TaAs andNbAs, including the Zeeman interaction at B approx 10T<missing VAR>, we predict an IR<missing VAR>reflectivity peak will develop with an mathbfE<missing VAR>textIR<missing VAR>cdotmathbfBdependence.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Optical Signatures of the Chiral Anomaly in Mirror-Symmetric Weyl Semimetals|Aaron Hui,Yi Zhang,Eun-Ah Kim###
(1622987, 1622987)
 Specifically for mirror-symmetric Weyl semimetals such as TaAs andNbAs, including the Zeeman interaction at B approx 10T<missing VAR>, we predict an IR<missing VAR>reflectivity peak will develop with an mathbfE<missing VAR>textIR<missing VAR>cdotmathbfBdependence.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni80Fe20
###Effect of atomic ordering on the magnetic anisotropy of single crystal Ni80Fe20|Movaffaq Kateb,Jon Tomas Gudmundsson,Snorri Ingvarsson###
(1623023, 1623026)
Effect of atomic ordering on the magnetic anisotropy of single crystal Ni80Fe20.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni80Fe20
###Effect of atomic ordering on the magnetic anisotropy of single crystal Ni80Fe20|Movaffaq Kateb,Jon Tomas Gudmundsson,Snorri Ingvarsson###
(1623054, 1623057)
 We investigate the effect of atomic ordering on the magnetic anisotropy ofNi80Fe20 at.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Effect of atomic ordering on the magnetic anisotropy of single crystal Ni80Fe20|Movaffaq Kateb,Jon Tomas Gudmundsson,Snorri Ingvarsson###
(1623087, 1623088)
 To this end, Py films were grown epitaxially on MgO (001)using dc magnetron sputtering (dcM<missing VAR>S) and high power impulse magnetronsputtering (HiPIM<missing VAR>S).
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Effect of atomic ordering on the magnetic anisotropy of single crystal Ni80Fe20|Movaffaq Kateb,Jon Tomas Gudmundsson,Snorri Ingvarsson###
(1623106, 1623106)
 To this end, Py films were grown epitaxially on MgO (001)using dc magnetron sputtering (dcM<missing VAR>S) and high power impulse magnetronsputtering (HiPIM<missing VAR>S).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PI
###Effect of atomic ordering on the magnetic anisotropy of single crystal Ni80Fe20|Movaffaq Kateb,Jon Tomas Gudmundsson,Snorri Ingvarsson###
(1623124, 1623125)
 To this end, Py films were grown epitaxially on MgO (001)using dc magnetron sputtering (dcM<missing VAR>S) and high power impulse magnetronsputtering (HiPIM<missing VAR>S).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Effect of atomic ordering on the magnetic anisotropy of single crystal Ni80Fe20|Movaffaq Kateb,Jon Tomas Gudmundsson,Snorri Ingvarsson###
(1623127, 1623127)
 To this end, Py films were grown epitaxially on MgO (001)using dc magnetron sputtering (dcM<missing VAR>S) and high power impulse magnetronsputtering (HiPIM<missing VAR>S).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Effect of atomic ordering on the magnetic anisotropy of single crystal Ni80Fe20|Movaffaq Kateb,Jon Tomas Gudmundsson,Snorri Ingvarsson###
(1623223, 1623223)
However, X<missing VAR>-ray diffraction results indicate higher order for the dcM<missing VAR>S depositedfilm towards L<missing VAR>12 Ni3Fe superlattice.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni3Fe
###Effect of atomic ordering on the magnetic anisotropy of single crystal Ni80Fe20|Movaffaq Kateb,Jon Tomas Gudmundsson,Snorri Ingvarsson###
(1623235, 1623237)
However, X<missing VAR>-ray diffraction results indicate higher order for the dcM<missing VAR>S depositedfilm towards L<missing VAR>12 Ni3Fe superlattice.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PI
###Effect of atomic ordering on the magnetic anisotropy of single crystal Ni80Fe20|Movaffaq Kateb,Jon Tomas Gudmundsson,Snorri Ingvarsson###
(1623268, 1623269)
 This difference can be understood by thevery high deposition rate of HiPIM<missing VAR>S during each pulse which suppresses adatommobility and ordering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Effect of atomic ordering on the magnetic anisotropy of single crystal Ni80Fe20|Movaffaq Kateb,Jon Tomas Gudmundsson,Snorri Ingvarsson###
(1623271, 1623271)
 This difference can be understood by thevery high deposition rate of HiPIM<missing VAR>S during each pulse which suppresses adatommobility and ordering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Effect of atomic ordering on the magnetic anisotropy of single crystal Ni80Fe20|Movaffaq Kateb,Jon Tomas Gudmundsson,Snorri Ingvarsson###
(1623303, 1623303)
 We show that the dcM<missing VAR>S deposited film presents biaxialanisotropy while HiPIM<missing VAR>S deposition gives well defined uniaxial anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PI
###Effect of atomic ordering on the magnetic anisotropy of single crystal Ni80Fe20|Movaffaq Kateb,Jon Tomas Gudmundsson,Snorri Ingvarsson###
(1623319, 1623320)
 We show that the dcM<missing VAR>S deposited film presents biaxialanisotropy while HiPIM<missing VAR>S deposition gives well defined uniaxial anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Effect of atomic ordering on the magnetic anisotropy of single crystal Ni80Fe20|Movaffaq Kateb,Jon Tomas Gudmundsson,Snorri Ingvarsson###
(1623322, 1623322)
 We show that the dcM<missing VAR>S deposited film presents biaxialanisotropy while HiPIM<missing VAR>S deposition gives well defined uniaxial anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Effect of atomic ordering on the magnetic anisotropy of single crystal Ni80Fe20|Movaffaq Kateb,Jon Tomas Gudmundsson,Snorri Ingvarsson###
(1623353, 1623353)
Thus, higher order achieved in the dcM<missing VAR>S deposition behaves as predicted bymagnetocrystalline anisotropy i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PI
###Effect of atomic ordering on the magnetic anisotropy of single crystal Ni80Fe20|Movaffaq Kateb,Jon Tomas Gudmundsson,Snorri Ingvarsson###
(1623429, 1623430)
 Theuniaxial behaviour in HiPIM<missing VAR>S deposited film then can be explained by pairordering or more recent localized composition non-uniformity theories.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Effect of atomic ordering on the magnetic anisotropy of single crystal Ni80Fe20|Movaffaq Kateb,Jon Tomas Gudmundsson,Snorri Ingvarsson###
(1623432, 1623432)
 Theuniaxial behaviour in HiPIM<missing VAR>S deposited film then can be explained by pairordering or more recent localized composition non-uniformity theories.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Effect of atomic ordering on the magnetic anisotropy of single crystal Ni80Fe20|Movaffaq Kateb,Jon Tomas Gudmundsson,Snorri Ingvarsson###
(1623531, 1623531)
 We find that the electrical resistivities of thedcM<missing VAR>S deposited film are lower than in their HiPIM<missing VAR>S counterparts verifying thehigher order in the dcM<missing VAR>S case.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PI
###Effect of atomic ordering on the magnetic anisotropy of single crystal Ni80Fe20|Movaffaq Kateb,Jon Tomas Gudmundsson,Snorri Ingvarsson###
(1623548, 1623549)
 We find that the electrical resistivities of thedcM<missing VAR>S deposited film are lower than in their HiPIM<missing VAR>S counterparts verifying thehigher order in the dcM<missing VAR>S case.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Effect of atomic ordering on the magnetic anisotropy of single crystal Ni80Fe20|Movaffaq Kateb,Jon Tomas Gudmundsson,Snorri Ingvarsson###
(1623551, 1623551)
 We find that the electrical resistivities of thedcM<missing VAR>S deposited film are lower than in their HiPIM<missing VAR>S counterparts verifying thehigher order in the dcM<missing VAR>S case.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Effect of atomic ordering on the magnetic anisotropy of single crystal Ni80Fe20|Movaffaq Kateb,Jon Tomas Gudmundsson,Snorri Ingvarsson###
(1623570, 1623570)
 We find that the electrical resistivities of thedcM<missing VAR>S deposited film are lower than in their HiPIM<missing VAR>S counterparts verifying thehigher order in the dcM<missing VAR>S case.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Theoretical Study on Anisotropic Magnetoresistance Effects of I//[100], I//[110], and I//[001] for Ferromagnets with A Crystal Field of Tetragonal Symmetry|Satoshi Kokado,Masakiyo Tsunoda###
(1623597, 1623597)
Theoretical Study on Anisotropic Magnetoresistance Effects of I//[100], I//[110], and I//[001] for Ferromagnets with A Crystal Field of Tetragonal Symmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[261.0, 0, ',', 3],[263.0, 2, ',', 3],[265.0, 4, ',', 3]

I
###Theoretical Study on Anisotropic Magnetoresistance Effects of I//[100], I//[110], and I//[001] for Ferromagnets with A Crystal Field of Tetragonal Symmetry|Satoshi Kokado,Masakiyo Tsunoda###
(1623605, 1623605)
Theoretical Study on Anisotropic Magnetoresistance Effects of I//[100], I//[110], and I//[001] for Ferromagnets with A Crystal Field of Tetragonal Symmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[253.0, 0, ',', 3],[255.0, 2, ',', 3],[257.0, 4, ',', 3]

I
###Theoretical Study on Anisotropic Magnetoresistance Effects of I//[100], I//[110], and I//[001] for Ferromagnets with A Crystal Field of Tetragonal Symmetry|Satoshi Kokado,Masakiyo Tsunoda###
(1623615, 1623615)
Theoretical Study on Anisotropic Magnetoresistance Effects of I//[100], I//[110], and I//[001] for Ferromagnets with A Crystal Field of Tetragonal Symmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[243.0, 0, ',', 3],[245.0, 2, ',', 3],[247.0, 4, ',', 3]

I
###Theoretical Study on Anisotropic Magnetoresistance Effects of I//[100], I//[110], and I//[001] for Ferromagnets with A Crystal Field of Tetragonal Symmetry|Satoshi Kokado,Masakiyo Tsunoda###
(1623750, 1623750)
 Here, a tetragonal distortion exists in the [001]direction, the magnetization mboxboldmath M<missing VAR> lies in the (001) plane,and the current mboxboldmath I flows in the [100], [010], or [001]direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 0, ',', 1],[110.0, 2, ',', 1],[112.0, 4, ',', 1]

I
###Theoretical Study on Anisotropic Magnetoresistance Effects of I//[100], I//[110], and I//[001] for Ferromagnets with A Crystal Field of Tetragonal Symmetry|Satoshi Kokado,Masakiyo Tsunoda###
(1623785, 1623785)
 When the mboxboldmath I direction is denoted by i<missing VAR>, weobtain the AMR ratio as rm AMRi (phii) C0i<missing VAR>  C2i<missing VAR> cos 2phii<missing VAR> C4i<missing VAR> cos 4 phii<missing VAR> ldots  sumj<missing VAR>0,2,4,ldots Cji cos jphii, withi<missing VAR>[100], [110], and [001], phi[100]  phi[001]phi, andphi[110]phi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 0, ',', 0],[75.0, 2, ',', 0],[77.0, 4, ',', 0]

C0
###Theoretical Study on Anisotropic Magnetoresistance Effects of I//[100], I//[110], and I//[001] for Ferromagnets with A Crystal Field of Tetragonal Symmetry|Satoshi Kokado,Masakiyo Tsunoda###
(1623825, 1623826)
 When the mboxboldmath I direction is denoted by i<missing VAR>, weobtain the AMR ratio as rm AMRi (phii) C0i<missing VAR>  C2i<missing VAR> cos 2phii<missing VAR> C4i<missing VAR> cos 4 phii<missing VAR> ldots  sumj<missing VAR>0,2,4,ldots Cji cos jphii, withi<missing VAR>[100], [110], and [001], phi[100]  phi[001]phi, andphi[110]phi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 0, ',', 0],[34.0, 2, ',', 0],[36.0, 4, ',', 0]

C2
###Theoretical Study on Anisotropic Magnetoresistance Effects of I//[100], I//[110], and I//[001] for Ferromagnets with A Crystal Field of Tetragonal Symmetry|Satoshi Kokado,Masakiyo Tsunoda###
(1623830, 1623831)
 When the mboxboldmath I direction is denoted by i<missing VAR>, weobtain the AMR ratio as rm AMRi (phii) C0i<missing VAR>  C2i<missing VAR> cos 2phii<missing VAR> C4i<missing VAR> cos 4 phii<missing VAR> ldots  sumj<missing VAR>0,2,4,ldots Cji cos jphii, withi<missing VAR>[100], [110], and [001], phi[100]  phi[001]phi, andphi[110]phi.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 0, ',', 0],[29.0, 2, ',', 0],[31.0, 4, ',', 0]

C4
###Theoretical Study on Anisotropic Magnetoresistance Effects of I//[100], I//[110], and I//[001] for Ferromagnets with A Crystal Field of Tetragonal Symmetry|Satoshi Kokado,Masakiyo Tsunoda###
(1623842, 1623843)
 When the mboxboldmath I direction is denoted by i<missing VAR>, weobtain the AMR ratio as rm AMRi (phii) C0i<missing VAR>  C2i<missing VAR> cos 2phii<missing VAR> C4i<missing VAR> cos 4 phii<missing VAR> ldots  sumj<missing VAR>0,2,4,ldots Cji cos jphii, withi<missing VAR>[100], [110], and [001], phi[100]  phi[001]phi, andphi[110]phi.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 0, ',', 0],[17.0, 2, ',', 0],[19.0, 4, ',', 0]

C
###Theoretical Study on Anisotropic Magnetoresistance Effects of I//[100], I//[110], and I//[001] for Ferromagnets with A Crystal Field of Tetragonal Symmetry|Satoshi Kokado,Masakiyo Tsunoda###
(1623866, 1623866)
 When the mboxboldmath I direction is denoted by i<missing VAR>, weobtain the AMR ratio as rm AMRi (phii) C0i<missing VAR>  C2i<missing VAR> cos 2phii<missing VAR> C4i<missing VAR> cos 4 phii<missing VAR> ldots  sumj<missing VAR>0,2,4,ldots Cji cos jphii, withi<missing VAR>[100], [110], and [001], phi[100]  phi[001]phi, andphi[110]phi.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 0, ',', 0],[6.0, 2, ',', 0],[4.0, 4, ',', 0]

C
###Theoretical Study on Anisotropic Magnetoresistance Effects of I//[100], I//[110], and I//[001] for Ferromagnets with A Crystal Field of Tetragonal Symmetry|Satoshi Kokado,Masakiyo Tsunoda###
(1623967, 1623967)
 The quantity phi (phi) is the relative anglebetween mboxboldmath M<missing VAR> and the [100] ([110]) direction, andCji is a coefficient composed of a spin--orbit coupling constant, anexchange field, the crystal field, and resistivities.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 0, ',', 1],[107.0, 2, ',', 1],[105.0, 4, ',', 1]

C
###Theoretical Study on Anisotropic Magnetoresistance Effects of I//[100], I//[110], and I//[001] for Ferromagnets with A Crystal Field of Tetragonal Symmetry|Satoshi Kokado,Masakiyo Tsunoda###
(1624024, 1624024)
 We elucidate the originof Cji cos jphii and the features of Cji.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 0, ',', 2],[164.0, 2, ',', 2],[162.0, 4, ',', 2]

C
###Theoretical Study on Anisotropic Magnetoresistance Effects of I//[100], I//[110], and I//[001] for Ferromagnets with A Crystal Field of Tetragonal Symmetry|Satoshi Kokado,Masakiyo Tsunoda###
(1624042, 1624042)
 We elucidate the originof Cji cos jphii and the features of Cji.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[184.0, 0, ',', 2],[182.0, 2, ',', 2],[180.0, 4, ',', 2]

In
###Theoretical Study on Anisotropic Magnetoresistance Effects of I//[100], I//[110], and I//[001] for Ferromagnets with A Crystal Field of Tetragonal Symmetry|Satoshi Kokado,Masakiyo Tsunoda###
(1624047, 1624047)
 In addition, we obtain therelation C4[100]  -C4[110], which was experimentally observed forNi, under a certain condition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[189.0, 0, ',', 3],[187.0, 2, ',', 3],[185.0, 4, ',', 3]

C4
###Theoretical Study on Anisotropic Magnetoresistance Effects of I//[100], I//[110], and I//[001] for Ferromagnets with A Crystal Field of Tetragonal Symmetry|Satoshi Kokado,Masakiyo Tsunoda###
(1624061, 1624062)
 In addition, we obtain therelation C4[100]  -C4[110], which was experimentally observed forNi, under a certain condition.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[203.0, 0, ',', 3],[201.0, 2, ',', 3],[199.0, 4, ',', 3]

C4
###Theoretical Study on Anisotropic Magnetoresistance Effects of I//[100], I//[110], and I//[001] for Ferromagnets with A Crystal Field of Tetragonal Symmetry|Satoshi Kokado,Masakiyo Tsunoda###
(1624069, 1624070)
 In addition, we obtain therelation C4[100]  -C4[110], which was experimentally observed forNi, under a certain condition.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[211.0, 0, ',', 3],[209.0, 2, ',', 3],[207.0, 4, ',', 3]

Ni
###Theoretical Study on Anisotropic Magnetoresistance Effects of I//[100], I//[110], and I//[001] for Ferromagnets with A Crystal Field of Tetragonal Symmetry|Satoshi Kokado,Masakiyo Tsunoda###
(1624087, 1624087)
 In addition, we obtain therelation C4[100]  -C4[110], which was experimentally observed forNi, under a certain condition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[229.0, 0, ',', 3],[227.0, 2, ',', 3],[225.0, 4, ',', 3]

C2
###Theoretical Study on Anisotropic Magnetoresistance Effects of I//[100], I//[110], and I//[001] for Ferromagnets with A Crystal Field of Tetragonal Symmetry|Satoshi Kokado,Masakiyo Tsunoda###
(1624116, 1624117)
 We also qualitatively explain the experimentalresults of C2[100], C4[100], C2[110], and C4[110] at293 K for Ni.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[258.0, 0, ',', 4],[256.0, 2, ',', 4],[254.0, 4, ',', 4]

C4
###Theoretical Study on Anisotropic Magnetoresistance Effects of I//[100], I//[110], and I//[001] for Ferromagnets with A Crystal Field of Tetragonal Symmetry|Satoshi Kokado,Masakiyo Tsunoda###
(1624123, 1624124)
 We also qualitatively explain the experimentalresults of C2[100], C4[100], C2[110], and C4[110] at293 K for Ni.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[265.0, 0, ',', 4],[263.0, 2, ',', 4],[261.0, 4, ',', 4]

C2
###Theoretical Study on Anisotropic Magnetoresistance Effects of I//[100], I//[110], and I//[001] for Ferromagnets with A Crystal Field of Tetragonal Symmetry|Satoshi Kokado,Masakiyo Tsunoda###
(1624130, 1624131)
 We also qualitatively explain the experimentalresults of C2[100], C4[100], C2[110], and C4[110] at293 K for Ni.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[272.0, 0, ',', 4],[270.0, 2, ',', 4],[268.0, 4, ',', 4]

C4
###Theoretical Study on Anisotropic Magnetoresistance Effects of I//[100], I//[110], and I//[001] for Ferromagnets with A Crystal Field of Tetragonal Symmetry|Satoshi Kokado,Masakiyo Tsunoda###
(1624139, 1624140)
 We also qualitatively explain the experimentalresults of C2[100], C4[100], C2[110], and C4[110] at293 K for Ni.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[281.0, 0, ',', 4],[279.0, 2, ',', 4],[277.0, 4, ',', 4]

K
###Theoretical Study on Anisotropic Magnetoresistance Effects of I//[100], I//[110], and I//[001] for Ferromagnets with A Crystal Field of Tetragonal Symmetry|Satoshi Kokado,Masakiyo Tsunoda###
(1624150, 1624150)
 We also qualitatively explain the experimentalresults of C2[100], C4[100], C2[110], and C4[110] at293 K for Ni.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[292.0, 0, ',', 4],[290.0, 2, ',', 4],[288.0, 4, ',', 4]

Ni
###Theoretical Study on Anisotropic Magnetoresistance Effects of I//[100], I//[110], and I//[001] for Ferromagnets with A Crystal Field of Tetragonal Symmetry|Satoshi Kokado,Masakiyo Tsunoda###
(1624154, 1624154)
 We also qualitatively explain the experimentalresults of C2[100], C4[100], C2[110], and C4[110] at293 K for Ni.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[296.0, 0, ',', 4],[294.0, 2, ',', 4],[292.0, 4, ',', 4]

UTe2
###Unconventional Superconductivity in Heavy Fermion UTe2|Dai Aoki,Ai Nakamura,Fuminori Honda,DeXin Li,Yoshiya Homma,Yusei Shimizu,Yoshiki J. Sato,Georg Knebel,Jean-Pascal Brison,Alexandre Pourret,Daniel Braithwaite,Gerard Lapertot,Qun Niu,Michal Valiska,Hisatomo Harima,Jacques Flouquet###
(1624175, 1624177)
Unconventional Superconductivity in Heavy Fermion UTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[135.0, 117, 'mJ', 4]

UTe2
###Unconventional Superconductivity in Heavy Fermion UTe2|Dai Aoki,Ai Nakamura,Fuminori Honda,DeXin Li,Yoshiya Homma,Yusei Shimizu,Yoshiki J. Sato,Georg Knebel,Jean-Pascal Brison,Alexandre Pourret,Daniel Braithwaite,Gerard Lapertot,Qun Niu,Michal Valiska,Hisatomo Harima,Jacques Flouquet###
(1624203, 1624205)
 We grew single crystals of the recently discovered heavy fermionsuperconductor UTe2, and measured the resistivity, specific heat andmagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[107.0, 117, 'mJ', 3]

(SC)
###Unconventional Superconductivity in Heavy Fermion UTe2|Dai Aoki,Ai Nakamura,Fuminori Honda,DeXin Li,Yoshiya Homma,Yusei Shimizu,Yoshiki J. Sato,Georg Knebel,Jean-Pascal Brison,Alexandre Pourret,Daniel Braithwaite,Gerard Lapertot,Qun Niu,Michal Valiska,Hisatomo Harima,Jacques Flouquet###
(1624229, 1624232)
 Superconductivity (SC) was clearly detected at Tsc1.65K assharp drop of the resistivity in a high quality sample of RRR35.
Featurization successful!
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 117, 'mJ', 2]

K
###Unconventional Superconductivity in Heavy Fermion UTe2|Dai Aoki,Ai Nakamura,Fuminori Honda,DeXin Li,Yoshiya Homma,Yusei Shimizu,Yoshiki J. Sato,Georg Knebel,Jean-Pascal Brison,Alexandre Pourret,Daniel Braithwaite,Gerard Lapertot,Qun Niu,Michal Valiska,Hisatomo Harima,Jacques Flouquet###
(1624244, 1624244)
 Superconductivity (SC) was clearly detected at Tsc1.65K assharp drop of the resistivity in a high quality sample of RRR35.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 117, 'mJ', 2]

K
###Unconventional Superconductivity in Heavy Fermion UTe2|Dai Aoki,Ai Nakamura,Fuminori Honda,DeXin Li,Yoshiya Homma,Yusei Shimizu,Yoshiki J. Sato,Georg Knebel,Jean-Pascal Brison,Alexandre Pourret,Daniel Braithwaite,Gerard Lapertot,Qun Niu,Michal Valiska,Hisatomo Harima,Jacques Flouquet###
(1624314, 1624314)
 The large Sommerfeldcoefficient, 117mJ K-2mol-1 extrapolated in the normal state and thetemperature dependence of C/T<missing VAR> below Tsc are the signature of unconventional SC.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 117, 'mJ', 0]

C
###Unconventional Superconductivity in Heavy Fermion UTe2|Dai Aoki,Ai Nakamura,Fuminori Honda,DeXin Li,Yoshiya Homma,Yusei Shimizu,Yoshiki J. Sato,Georg Knebel,Jean-Pascal Brison,Alexandre Pourret,Daniel Braithwaite,Gerard Lapertot,Qun Niu,Michal Valiska,Hisatomo Harima,Jacques Flouquet###
(1624342, 1624342)
 The large Sommerfeldcoefficient, 117mJ K-2mol-1 extrapolated in the normal state and thetemperature dependence of C/T<missing VAR> below Tsc are the signature of unconventional SC.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 117, 'mJ', 0]

SC
###Unconventional Superconductivity in Heavy Fermion UTe2|Dai Aoki,Ai Nakamura,Fuminori Honda,DeXin Li,Yoshiya Homma,Yusei Shimizu,Yoshiki J. Sato,Georg Knebel,Jean-Pascal Brison,Alexandre Pourret,Daniel Braithwaite,Gerard Lapertot,Qun Niu,Michal Valiska,Hisatomo Harima,Jacques Flouquet###
(1624360, 1624361)
 The large Sommerfeldcoefficient, 117mJ K-2mol-1 extrapolated in the normal state and thetemperature dependence of C/T<missing VAR> below Tsc are the signature of unconventional SC.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 117, 'mJ', 0]

SC
###Unconventional Superconductivity in Heavy Fermion UTe2|Dai Aoki,Ai Nakamura,Fuminori Honda,DeXin Li,Yoshiya Homma,Yusei Shimizu,Yoshiki J. Sato,Georg Knebel,Jean-Pascal Brison,Alexandre Pourret,Daniel Braithwaite,Gerard Lapertot,Qun Niu,Michal Valiska,Hisatomo Harima,Jacques Flouquet###
(1624383, 1624384)
The discrepancy in the entropy balance at Tsc between SC and normal statespoints out that hidden features must occur.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 117, 'mJ', 1]

SC
###Unconventional Superconductivity in Heavy Fermion UTe2|Dai Aoki,Ai Nakamura,Fuminori Honda,DeXin Li,Yoshiya Homma,Yusei Shimizu,Yoshiki J. Sato,Georg Knebel,Jean-Pascal Brison,Alexandre Pourret,Daniel Braithwaite,Gerard Lapertot,Qun Niu,Michal Valiska,Hisatomo Harima,Jacques Flouquet###
(1624476, 1624477)
The large upper critical field Hc2 along the three principal axes favorsspin-triplet SC.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 117, 'mJ', 3]

H
###Unconventional Superconductivity in Heavy Fermion UTe2|Dai Aoki,Ai Nakamura,Fuminori Honda,DeXin Li,Yoshiya Homma,Yusei Shimizu,Yoshiki J. Sato,Georg Knebel,Jean-Pascal Brison,Alexandre Pourret,Daniel Braithwaite,Gerard Lapertot,Qun Niu,Michal Valiska,Hisatomo Harima,Jacques Flouquet###
(1624482, 1624482)
 For H // b<missing VAR>-axis, our experiments do not reproduce the hugeupturn of Hc2 reported previously.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[170.0, 117, 'mJ', 4]

UTe2
###Unconventional Superconductivity in Heavy Fermion UTe2|Dai Aoki,Ai Nakamura,Fuminori Honda,DeXin Li,Yoshiya Homma,Yusei Shimizu,Yoshiki J. Sato,Georg Knebel,Jean-Pascal Brison,Alexandre Pourret,Daniel Braithwaite,Gerard Lapertot,Qun Niu,Michal Valiska,Hisatomo Harima,Jacques Flouquet###
(1624556, 1624558)
 A new perspective in UTe2 is theproximity of a Kondo semiconducting phase predicted by the LDA band structurecalculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[244.0, 117, 'mJ', 6]

MoTe2
###Angular dependence of the upper critical field in the high-pressure $1T'$ phase of MoTe$_2$|Y. J. Hu,Yuk Tai Chan,Kwing To Lai,Kin On Ho,Xiaoyu Guo,Hai-Peng Sun,K. Y. Yip,Dickon H. L. Ng,Hai-Zhou Lu,Swee K. Goh###
(1624632, 1624634)
Angular dependence of the upper critical field in the high-pressure 1T<missing VAR> phase of MoTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[420.0, 0.45, ',', 8],[482.0, 15, 'kbar', 10]

II
###Angular dependence of the upper critical field in the high-pressure $1T'$ phase of MoTe$_2$|Y. J. Hu,Yuk Tai Chan,Kwing To Lai,Kin On Ho,Xiaoyu Guo,Hai-Peng Sun,K. Y. Yip,Dickon H. L. Ng,Hai-Zhou Lu,Swee K. Goh###
(1624645, 1624646)
 Superconductivity in the type-II Weyl semimetal candidate MoTe2 hasattracted much attention due to the possible realization of topologicalsuperconductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[408.0, 0.45, ',', 7],[470.0, 15, 'kbar', 9]

MoTe2
###Angular dependence of the upper critical field in the high-pressure $1T'$ phase of MoTe$_2$|Y. J. Hu,Yuk Tai Chan,Kwing To Lai,Kin On Ho,Xiaoyu Guo,Hai-Peng Sun,K. Y. Yip,Dickon H. L. Ng,Hai-Zhou Lu,Swee K. Goh###
(1624654, 1624656)
 Superconductivity in the type-II Weyl semimetal candidate MoTe2 hasattracted much attention due to the possible realization of topologicalsuperconductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[398.0, 0.45, ',', 7],[460.0, 15, 'kbar', 9]

MoTe2
###Angular dependence of the upper critical field in the high-pressure $1T'$ phase of MoTe$_2$|Y. J. Hu,Yuk Tai Chan,Kwing To Lai,Kin On Ho,Xiaoyu Guo,Hai-Peng Sun,K. Y. Yip,Dickon H. L. Ng,Hai-Zhou Lu,Swee K. Goh###
(1624778, 1624780)
Hence, applying pressure allows us to investigate the dimensionality ofsuperconductivity in 1T<missing VAR>-MoTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[274.0, 0.45, ',', 5],[336.0, 15, 'kbar', 7]

H
###Angular dependence of the upper critical field in the high-pressure $1T'$ phase of MoTe$_2$|Y. J. Hu,Yuk Tai Chan,Kwing To Lai,Kin On Ho,Xiaoyu Guo,Hai-Peng Sun,K. Y. Yip,Dickon H. L. Ng,Hai-Zhou Lu,Swee K. Goh###
(1624812, 1624812)
 We have performed a detailed study of themagnetotransport properties and upper critical field Hc<missing VAR>2 of MoTe2 underpressure.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[242.0, 0.45, ',', 4],[304.0, 15, 'kbar', 6]

MoTe2
###Angular dependence of the upper critical field in the high-pressure $1T'$ phase of MoTe$_2$|Y. J. Hu,Yuk Tai Chan,Kwing To Lai,Kin On Ho,Xiaoyu Guo,Hai-Peng Sun,K. Y. Yip,Dickon H. L. Ng,Hai-Zhou Lu,Swee K. Goh###
(1624818, 1624820)
 We have performed a detailed study of themagnetotransport properties and upper critical field Hc<missing VAR>2 of MoTe2 underpressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[234.0, 0.45, ',', 4],[296.0, 15, 'kbar', 6]

MoTe2
###Angular dependence of the upper critical field in the high-pressure $1T'$ phase of MoTe$_2$|Y. J. Hu,Yuk Tai Chan,Kwing To Lai,Kin On Ho,Xiaoyu Guo,Hai-Peng Sun,K. Y. Yip,Dickon H. L. Ng,Hai-Zhou Lu,Swee K. Goh###
(1624845, 1624847)
 The magnetoresistance (MR) and Hall coefficient of MoTe2 are foundto be decreasing with increasing pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[207.0, 0.45, ',', 3],[269.0, 15, 'kbar', 5]

In
###Angular dependence of the upper critical field in the high-pressure $1T'$ phase of MoTe$_2$|Y. J. Hu,Yuk Tai Chan,Kwing To Lai,Kin On Ho,Xiaoyu Guo,Hai-Peng Sun,K. Y. Yip,Dickon H. L. Ng,Hai-Zhou Lu,Swee K. Goh###
(1624867, 1624867)
 In addition, the Kohlers<missing VAR> scalingsfor the MR data above sim11 kbar show a change of exponent whereas the dataat lower pressure can be well scaled with a single exponent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[187.0, 0.45, ',', 2],[249.0, 15, 'kbar', 4]

H
###Angular dependence of the upper critical field in the high-pressure $1T'$ phase of MoTe$_2$|Y. J. Hu,Yuk Tai Chan,Kwing To Lai,Kin On Ho,Xiaoyu Guo,Hai-Peng Sun,K. Y. Yip,Dickon H. L. Ng,Hai-Zhou Lu,Swee K. Goh###
(1624981, 1624981)
 The Hc<missing VAR>2-temperature phase diagram constructed at15 kbar, with Hparallel ab and Hperp ab, can be satisfactorily describedby the Werthamer-Helfand-Hohenberg model with the Maki parameters alpha sim0.77 and 0.45, respectively.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 0.45, ',', 0],[135.0, 15, 'kbar', 2]

H
###Angular dependence of the upper critical field in the high-pressure $1T'$ phase of MoTe$_2$|Y. J. Hu,Yuk Tai Chan,Kwing To Lai,Kin On Ho,Xiaoyu Guo,Hai-Peng Sun,K. Y. Yip,Dickon H. L. Ng,Hai-Zhou Lu,Swee K. Goh###
(1625003, 1625003)
 The Hc<missing VAR>2-temperature phase diagram constructed at15 kbar, with Hparallel ab and Hperp ab, can be satisfactorily describedby the Werthamer-Helfand-Hohenberg model with the Maki parameters alpha sim0.77 and 0.45, respectively.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 0.45, ',', 0],[113.0, 15, 'kbar', 2]

H
###Angular dependence of the upper critical field in the high-pressure $1T'$ phase of MoTe$_2$|Y. J. Hu,Yuk Tai Chan,Kwing To Lai,Kin On Ho,Xiaoyu Guo,Hai-Peng Sun,K. Y. Yip,Dickon H. L. Ng,Hai-Zhou Lu,Swee K. Goh###
(1625010, 1625010)
 The Hc<missing VAR>2-temperature phase diagram constructed at15 kbar, with Hparallel ab and Hperp ab, can be satisfactorily describedby the Werthamer-Helfand-Hohenberg model with the Maki parameters alpha sim0.77 and 0.45, respectively.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 0.45, ',', 0],[106.0, 15, 'kbar', 2]

MoTe2
###Angular dependence of the upper critical field in the high-pressure $1T'$ phase of MoTe$_2$|Y. J. Hu,Yuk Tai Chan,Kwing To Lai,Kin On Ho,Xiaoyu Guo,Hai-Peng Sun,K. Y. Yip,Dickon H. L. Ng,Hai-Zhou Lu,Swee K. Goh###
(1625097, 1625099)
 The relatively large alpha may stem from asmall Fermi surface and a large effective mass of semimetallic MoTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 0.45, ',', 1],[17.0, 15, 'kbar', 1]

H
###Angular dependence of the upper critical field in the high-pressure $1T'$ phase of MoTe$_2$|Y. J. Hu,Yuk Tai Chan,Kwing To Lai,Kin On Ho,Xiaoyu Guo,Hai-Peng Sun,K. Y. Yip,Dickon H. L. Ng,Hai-Zhou Lu,Swee K. Goh###
(1625111, 1625111)
 Theangular dependence of Hc<missing VAR>2 at 15 kbar can be well fitted by the Tinkhammodel, suggesting the two-dimensional nature of superconductivity in thehigh-pressure 1T<missing VAR> phase.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 0.45, ',', 2],[5.0, 15, 'kbar', 0]

FeSe1-xS
###Coexistence of orbital and quantum critical magnetoresistance in FeSe$_{1-x}$S$_{x}$|S. Licciardello,N. Maksimovic,J. Ayres,J. Buhot,M. Culo,B. Bryant,S. Kasahara,Y. Matsuda,T. Shibauchi,V. Nagarajan,J. G. Analytis,N. E. Hussey###
(1625189, 1625194)
Coexistence of orbital and quantum critical magnetoresistance in FeSe1-xSx<missing VAR>.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

P
###Coexistence of orbital and quantum critical magnetoresistance in FeSe$_{1-x}$S$_{x}$|S. Licciardello,N. Maksimovic,J. Ayres,J. Buhot,M. Culo,B. Bryant,S. Kasahara,Y. Matsuda,T. Shibauchi,V. Nagarajan,J. G. Analytis,N. E. Hussey###
(1625223, 1625223)
 The recent discovery of a non-magnetic nematic quantum critical point (Q<missing VAR>CP)in the iron chalcogenide family FeSe1-xSx<missing VAR> has raised the prospect ofinvestigating, in isolation, the role of nematicity on the electronicproperties of correlated metals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeSe1-xS
###Coexistence of orbital and quantum critical magnetoresistance in FeSe$_{1-x}$S$_{x}$|S. Licciardello,N. Maksimovic,J. Ayres,J. Buhot,M. Culo,B. Bryant,S. Kasahara,Y. Matsuda,T. Shibauchi,V. Nagarajan,J. G. Analytis,N. E. Hussey###
(1625237, 1625242)
 The recent discovery of a non-magnetic nematic quantum critical point (Q<missing VAR>CP)in the iron chalcogenide family FeSe1-xSx<missing VAR> has raised the prospect ofinvestigating, in isolation, the role of nematicity on the electronicproperties of correlated metals.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

FeSe1-xS
###Coexistence of orbital and quantum critical magnetoresistance in FeSe$_{1-x}$S$_{x}$|S. Licciardello,N. Maksimovic,J. Ayres,J. Buhot,M. Culo,B. Bryant,S. Kasahara,Y. Matsuda,T. Shibauchi,V. Nagarajan,J. G. Analytis,N. E. Hussey###
(1625320, 1625325)
 Here we report a detailed study of the normalstate transverse magnetoresistance (MR) in FeSe1-xSx<missing VAR> for a series ofS concentrations spanning the nematic Q<missing VAR>CP.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

S
###Coexistence of orbital and quantum critical magnetoresistance in FeSe$_{1-x}$S$_{x}$|S. Licciardello,N. Maksimovic,J. Ayres,J. Buhot,M. Culo,B. Bryant,S. Kasahara,Y. Matsuda,T. Shibauchi,V. Nagarajan,J. G. Analytis,N. E. Hussey###
(1625337, 1625337)
 Here we report a detailed study of the normalstate transverse magnetoresistance (MR) in FeSe1-xSx<missing VAR> for a series ofS concentrations spanning the nematic Q<missing VAR>CP.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CP
###Coexistence of orbital and quantum critical magnetoresistance in FeSe$_{1-x}$S$_{x}$|S. Licciardello,N. Maksimovic,J. Ayres,J. Buhot,M. Culo,B. Bryant,S. Kasahara,Y. Matsuda,T. Shibauchi,V. Nagarajan,J. G. Analytis,N. E. Hussey###
(1625348, 1625349)
 Here we report a detailed study of the normalstate transverse magnetoresistance (MR) in FeSe1-xSx<missing VAR> for a series ofS concentrations spanning the nematic Q<missing VAR>CP.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Coexistence of orbital and quantum critical magnetoresistance in FeSe$_{1-x}$S$_{x}$|S. Licciardello,N. Maksimovic,J. Ayres,J. Buhot,M. Culo,B. Bryant,S. Kasahara,Y. Matsuda,T. Shibauchi,V. Nagarajan,J. G. Analytis,N. E. Hussey###
(1625409, 1625409)
 For all temperatures andtextitx<missing VAR>-values studied, the MR can be decomposed into two distinctcomponents one that varies quadratically in magnetic field strengthmu0textitH and one that follows precisely the quadrature scaling formrecently reported in metals at or close to a Q<missing VAR>CP and characterized by atextitH-linear MR over an extended field range.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CP
###Coexistence of orbital and quantum critical magnetoresistance in FeSe$_{1-x}$S$_{x}$|S. Licciardello,N. Maksimovic,J. Ayres,J. Buhot,M. Culo,B. Bryant,S. Kasahara,Y. Matsuda,T. Shibauchi,V. Nagarajan,J. G. Analytis,N. E. Hussey###
(1625449, 1625450)
 For all temperatures andtextitx<missing VAR>-values studied, the MR can be decomposed into two distinctcomponents one that varies quadratically in magnetic field strengthmu0textitH and one that follows precisely the quadrature scaling formrecently reported in metals at or close to a Q<missing VAR>CP and characterized by atextitH-linear MR over an extended field range.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Coexistence of orbital and quantum critical magnetoresistance in FeSe$_{1-x}$S$_{x}$|S. Licciardello,N. Maksimovic,J. Ayres,J. Buhot,M. Culo,B. Bryant,S. Kasahara,Y. Matsuda,T. Shibauchi,V. Nagarajan,J. G. Analytis,N. E. Hussey###
(1625462, 1625462)
 For all temperatures andtextitx<missing VAR>-values studied, the MR can be decomposed into two distinctcomponents one that varies quadratically in magnetic field strengthmu0textitH and one that follows precisely the quadrature scaling formrecently reported in metals at or close to a Q<missing VAR>CP and characterized by atextitH-linear MR over an extended field range.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Coexistence of orbital and quantum critical magnetoresistance in FeSe$_{1-x}$S$_{x}$|S. Licciardello,N. Maksimovic,J. Ayres,J. Buhot,M. Culo,B. Bryant,S. Kasahara,Y. Matsuda,T. Shibauchi,V. Nagarajan,J. G. Analytis,N. E. Hussey###
(1625499, 1625499)
 The two components evolvesystematically with both temperature and S-substitution in a manner that isdetermined by their proximity to the nematic Q<missing VAR>CP.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CP
###Coexistence of orbital and quantum critical magnetoresistance in FeSe$_{1-x}$S$_{x}$|S. Licciardello,N. Maksimovic,J. Ayres,J. Buhot,M. Culo,B. Bryant,S. Kasahara,Y. Matsuda,T. Shibauchi,V. Nagarajan,J. G. Analytis,N. E. Hussey###
(1625529, 1625530)
 The two components evolvesystematically with both temperature and S-substitution in a manner that isdetermined by their proximity to the nematic Q<missing VAR>CP.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CP
###Coexistence of orbital and quantum critical magnetoresistance in FeSe$_{1-x}$S$_{x}$|S. Licciardello,N. Maksimovic,J. Ayres,J. Buhot,M. Culo,B. Bryant,S. Kasahara,Y. Matsuda,T. Shibauchi,V. Nagarajan,J. G. Analytis,N. E. Hussey###
(1625650, 1625651)
 Moreover, the quantum critical component of the MR is found tobe less sensitive to disorder than the quadratic (orbital) MR, suggesting thatdetection of the latter in previous MR studies of metals near a Q<missing VAR>CP may havebeen obscured.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Magnetic properties and domain structure of ultrathin yttrium iron garnet/Pt bilayers|Johannes Mendil,Morgan Trassin,Qingqing Bu,Jakob Schaab,Manuel Baumgartner,Christoph Murer,Phuong T. Dao,Jaianth Vijayakumar,David Bracher,Corinne Bouillet,Carlos A. F. Vaz,Manfred Fiebig,Pietro Gambardella###
(1626078, 1626078)
Magnetic properties and domain structure of ultrathin yttrium iron garnet/Pt bilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 3, 'to', 1],[60.0, 90, 'nm', 1],[116.0, 10, 'nm', 2],[224.0, 10, 'to', 4],[323.0, 10, 'nm', 6],[396.0, 10, 'nm', 7]

YI
###Magnetic properties and domain structure of ultrathin yttrium iron garnet/Pt bilayers|Johannes Mendil,Morgan Trassin,Qingqing Bu,Jakob Schaab,Manuel Baumgartner,Christoph Murer,Phuong T. Dao,Jaianth Vijayakumar,David Bracher,Corinne Bouillet,Carlos A. F. Vaz,Manfred Fiebig,Pietro Gambardella###
(1626120, 1626121)
 We report on the structure, magnetization, magnetic anisotropy, and domainmorphology of ultrathin yttrium iron garnet (YIG)/Pt films with thicknessranging from 3 to 90 nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 3, 'to', 0],[17.0, 90, 'nm', 0],[73.0, 10, 'nm', 1],[181.0, 10, 'to', 3],[280.0, 10, 'nm', 5],[353.0, 10, 'nm', 6]

Pt
###Magnetic properties and domain structure of ultrathin yttrium iron garnet/Pt bilayers|Johannes Mendil,Morgan Trassin,Qingqing Bu,Jakob Schaab,Manuel Baumgartner,Christoph Murer,Phuong T. Dao,Jaianth Vijayakumar,David Bracher,Corinne Bouillet,Carlos A. F. Vaz,Manfred Fiebig,Pietro Gambardella###
(1626125, 1626125)
 We report on the structure, magnetization, magnetic anisotropy, and domainmorphology of ultrathin yttrium iron garnet (YIG)/Pt films with thicknessranging from 3 to 90 nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 3, 'to', 0],[13.0, 90, 'nm', 0],[69.0, 10, 'nm', 1],[177.0, 10, 'to', 3],[276.0, 10, 'nm', 5],[349.0, 10, 'nm', 6]

YI
###Magnetic properties and domain structure of ultrathin yttrium iron garnet/Pt bilayers|Johannes Mendil,Morgan Trassin,Qingqing Bu,Jakob Schaab,Manuel Baumgartner,Christoph Murer,Phuong T. Dao,Jaianth Vijayakumar,David Bracher,Corinne Bouillet,Carlos A. F. Vaz,Manfred Fiebig,Pietro Gambardella###
(1626392, 1626393)
 X<missing VAR>-rayphotoelectron emission microscopy reveals the formation of zigzag magneticdomains in YIG<missing VAR> films thicker than 10 nm, which have dimensions larger thanseveral 100 mum<missing VAR> and are separated by achiral Ne<missing VAR>el-type domain walls.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[255.0, 3, 'to', 5],[254.0, 90, 'nm', 5],[198.0, 10, 'nm', 4],[90.0, 10, 'to', 2],[8.0, 10, 'nm', 0],[81.0, 10, 'nm', 1]

N
###Magnetic properties and domain structure of ultrathin yttrium iron garnet/Pt bilayers|Johannes Mendil,Morgan Trassin,Qingqing Bu,Jakob Schaab,Manuel Baumgartner,Christoph Murer,Phuong T. Dao,Jaianth Vijayakumar,David Bracher,Corinne Bouillet,Carlos A. F. Vaz,Manfred Fiebig,Pietro Gambardella###
(1626432, 1626432)
 X<missing VAR>-rayphotoelectron emission microscopy reveals the formation of zigzag magneticdomains in YIG<missing VAR> films thicker than 10 nm, which have dimensions larger thanseveral 100 mum<missing VAR> and are separated by achiral Ne<missing VAR>el-type domain walls.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[295.0, 3, 'to', 5],[294.0, 90, 'nm', 5],[238.0, 10, 'nm', 4],[130.0, 10, 'to', 2],[31.0, 10, 'nm', 0],[42.0, 10, 'nm', 1]

YI
###Magnetic properties and domain structure of ultrathin yttrium iron garnet/Pt bilayers|Johannes Mendil,Morgan Trassin,Qingqing Bu,Jakob Schaab,Manuel Baumgartner,Christoph Murer,Phuong T. Dao,Jaianth Vijayakumar,David Bracher,Corinne Bouillet,Carlos A. F. Vaz,Manfred Fiebig,Pietro Gambardella###
(1626465, 1626466)
Smaller domains characterized by interspersed elongated features are found inYIG<missing VAR> films thinner than 10 nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[328.0, 3, 'to', 6],[327.0, 90, 'nm', 6],[271.0, 10, 'nm', 5],[163.0, 10, 'to', 3],[64.0, 10, 'nm', 1],[8.0, 10, 'nm', 0]

O
###Fast learning synapses with molecular spin valves via selective magnetic potentiation|Alberto Riminucci,Robert Legenstein###
(1626515, 1626515)
 We studied LSMO/Alq3/AlOx/Co molecular spin valves in view of their use assynapses in neuromorphic computing.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[371.0, 0.975, 'was', 8]

Al
###Fast learning synapses with molecular spin valves via selective magnetic potentiation|Alberto Riminucci,Robert Legenstein###
(1626520, 1626520)
 We studied LSMO/Alq3/AlOx/Co molecular spin valves in view of their use assynapses in neuromorphic computing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[366.0, 0.975, 'was', 8]

Co
###Fast learning synapses with molecular spin valves via selective magnetic potentiation|Alberto Riminucci,Robert Legenstein###
(1626523, 1626523)
 We studied LSMO/Alq3/AlOx/Co molecular spin valves in view of their use assynapses in neuromorphic computing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[363.0, 0.975, 'was', 8]

In
###Fast learning synapses with molecular spin valves via selective magnetic potentiation|Alberto Riminucci,Robert Legenstein###
(1626553, 1626553)
 In neuromorphic computing, the learningability is embodied in specific changes of the synaptic weight.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[333.0, 0.975, 'was', 7]

In
###Fast learning synapses with molecular spin valves via selective magnetic potentiation|Alberto Riminucci,Robert Legenstein###
(1626586, 1626586)
 In thisperspective, the relevant parameter is the conductance of the molecular spinvalve, which plays the role of the synaptic weight.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[300.0, 0.975, 'was', 6]

In
###Fast learning synapses with molecular spin valves via selective magnetic potentiation|Alberto Riminucci,Robert Legenstein###
(1626635, 1626635)
 In this work wedemonstrated that the conductance can be changes by the repeated application ofvoltage pulses.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[251.0, 0.975, 'was', 5]

HgCr2Se4
###Magnetic competition induced colossal magnetoresistance in n-type HgCr2Se4 under high pressures|J. P. Sun,Y. Y. Jiao,C. J. Yi,S. E. Dissanayake,M. Matsuda,Y. Uwatoko,Y. G. Shi,Y. Q. Li,Z. Fang,J. -G. Cheng###
(1627000, 1627004)
Magnetic competition induced colossal magnetoresistance in n<missing VAR>-type HgCr2Se4 under high pressures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 106, 'K', 1],[144.0, 8, 'GPa', 2],[155.0, 8, 'T', 2],[317.0, 5, 'T', 4],[320.0, 2, 'K', 4],[323.0, 4, 'GPa', 4]

HgCr2Se4
###Magnetic competition induced colossal magnetoresistance in n-type HgCr2Se4 under high pressures|J. P. Sun,Y. Y. Jiao,C. J. Yi,S. E. Dissanayake,M. Matsuda,Y. Uwatoko,Y. G. Shi,Y. Q. Li,Z. Fang,J. -G. Cheng###
(1627019, 1627023)
 The n<missing VAR>-type HgCr2Se4 exhibits a sharp semiconductor-to-metal transition (SMT)in resistivity accompanying the ferromagnetic order at T<missing VAR>C  106 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 106, 'K', 0],[125.0, 8, 'GPa', 1],[136.0, 8, 'T', 1],[298.0, 5, 'T', 3],[301.0, 2, 'K', 3],[304.0, 4, 'GPa', 3]

S
###Magnetic competition induced colossal magnetoresistance in n-type HgCr2Se4 under high pressures|J. P. Sun,Y. Y. Jiao,C. J. Yi,S. E. Dissanayake,M. Matsuda,Y. Uwatoko,Y. G. Shi,Y. Q. Li,Z. Fang,J. -G. Cheng###
(1627040, 1627040)
 The n<missing VAR>-type HgCr2Se4 exhibits a sharp semiconductor-to-metal transition (SMT)in resistivity accompanying the ferromagnetic order at T<missing VAR>C  106 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 106, 'K', 0],[108.0, 8, 'GPa', 1],[119.0, 8, 'T', 1],[281.0, 5, 'T', 3],[284.0, 2, 'K', 3],[287.0, 4, 'GPa', 3]

C
###Magnetic competition induced colossal magnetoresistance in n-type HgCr2Se4 under high pressures|J. P. Sun,Y. Y. Jiao,C. J. Yi,S. E. Dissanayake,M. Matsuda,Y. Uwatoko,Y. G. Shi,Y. Q. Li,Z. Fang,J. -G. Cheng###
(1627061, 1627061)
 The n<missing VAR>-type HgCr2Se4 exhibits a sharp semiconductor-to-metal transition (SMT)in resistivity accompanying the ferromagnetic order at T<missing VAR>C  106 K.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 106, 'K', 0],[87.0, 8, 'GPa', 1],[98.0, 8, 'T', 1],[260.0, 5, 'T', 3],[263.0, 2, 'K', 3],[266.0, 4, 'GPa', 3]

S
###Magnetic competition induced colossal magnetoresistance in n-type HgCr2Se4 under high pressures|J. P. Sun,Y. Y. Jiao,C. J. Yi,S. E. Dissanayake,M. Matsuda,Y. Uwatoko,Y. G. Shi,Y. Q. Li,Z. Fang,J. -G. Cheng###
(1627094, 1627094)
 Here, weinvestigate the effects of pressure and magnetic field on the concomitant SMTand ferromagnetic order by measuring resistivity, dc and ac magneticsusceptibility, as well as single-crystal neutron diffraction under variouspressures up to 8 GPa and magnetic fields up to 8 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 106, 'K', 1],[54.0, 8, 'GPa', 0],[65.0, 8, 'T', 0],[227.0, 5, 'T', 2],[230.0, 2, 'K', 2],[233.0, 4, 'GPa', 2]

HgCr2Se4
###Magnetic competition induced colossal magnetoresistance in n-type HgCr2Se4 under high pressures|J. P. Sun,Y. Y. Jiao,C. J. Yi,S. E. Dissanayake,M. Matsuda,Y. Uwatoko,Y. G. Shi,Y. Q. Li,Z. Fang,J. -G. Cheng###
(1627187, 1627191)
 Our results demonstratethat the ferromagnetic metallic ground state of n<missing VAR>-type HgCr2Se4 is destabilizedand gradually replaced by an antiferromagnetic, most likely a spiral magnetic,and insulating ground state upon the application of high pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 106, 'K', 2],[39.0, 8, 'GPa', 1],[28.0, 8, 'T', 1],[130.0, 5, 'T', 1],[133.0, 2, 'K', 1],[136.0, 4, 'GPa', 1]

C
###Magnetic competition induced colossal magnetoresistance in n-type HgCr2Se4 under high pressures|J. P. Sun,Y. Y. Jiao,C. J. Yi,S. E. Dissanayake,M. Matsuda,Y. Uwatoko,Y. G. Shi,Y. Q. Li,Z. Fang,J. -G. Cheng###
(1627300, 1627300)
 On the otherhand, the application of external magnetic fields can restore the ferromagneticmetallic state again at high pressures, resulting in a colossalmagnetoresistance (CMR) as high as  3  1011 % under 5 T and 2 K at 4 GPa.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[237.0, 106, 'K', 3],[152.0, 8, 'GPa', 2],[141.0, 8, 'T', 2],[21.0, 5, 'T', 0],[24.0, 2, 'K', 0],[27.0, 4, 'GPa', 0]

HgCr2Se4
###Magnetic competition induced colossal magnetoresistance in n-type HgCr2Se4 under high pressures|J. P. Sun,Y. Y. Jiao,C. J. Yi,S. E. Dissanayake,M. Matsuda,Y. Uwatoko,Y. G. Shi,Y. Q. Li,Z. Fang,J. -G. Cheng###
(1627345, 1627349)
The present study demonstrates that n<missing VAR>-type HgCr2Se4 is located at a peculiarcritical point where the balance of competion between ferromagnetic andantiferromagnetic interactions can be easily tipped by the external stimuli,providing a new platform for achieving CMR in a single-valent system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[282.0, 106, 'K', 4],[197.0, 8, 'GPa', 3],[186.0, 8, 'T', 3],[24.0, 5, 'T', 1],[21.0, 2, 'K', 1],[18.0, 4, 'GPa', 1]

C
###Magnetic competition induced colossal magnetoresistance in n-type HgCr2Se4 under high pressures|J. P. Sun,Y. Y. Jiao,C. J. Yi,S. E. Dissanayake,M. Matsuda,Y. Uwatoko,Y. G. Shi,Y. Q. Li,Z. Fang,J. -G. Cheng###
(1627417, 1627417)
The present study demonstrates that n<missing VAR>-type HgCr2Se4 is located at a peculiarcritical point where the balance of competion between ferromagnetic andantiferromagnetic interactions can be easily tipped by the external stimuli,providing a new platform for achieving CMR in a single-valent system.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[354.0, 106, 'K', 4],[269.0, 8, 'GPa', 3],[258.0, 8, 'T', 3],[96.0, 5, 'T', 1],[93.0, 2, 'K', 1],[90.0, 4, 'GPa', 1]

PrBi
###Fermi surface topology and large magnetoresistance in the topological semimetal candidate PrBi|Amit Vashist,R. K. Gopal,Divya Srivastava,M. Karppinen,Yogesh Singh###
(1627462, 1627463)
Fermi surface topology and large magnetoresistance in the topological semimetal candidate PrBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PrBi
###Fermi surface topology and large magnetoresistance in the topological semimetal candidate PrBi|Amit Vashist,R. K. Gopal,Divya Srivastava,M. Karppinen,Yogesh Singh###
(1627486, 1627487)
 We report a detailed magnetotransport study on single crystals of PrBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PrBi
###Fermi surface topology and large magnetoresistance in the topological semimetal candidate PrBi|Amit Vashist,R. K. Gopal,Divya Srivastava,M. Karppinen,Yogesh Singh###
(1627533, 1627534)
 PrBi shows a magneticfield induced metal insulator transition below T<missing VAR> sim 20 K and a very largemagnetoresistance (approx 4.4 times 104) at low temperatures (T<missing VAR> 2 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Fermi surface topology and large magnetoresistance in the topological semimetal candidate PrBi|Amit Vashist,R. K. Gopal,Divya Srivastava,M. Karppinen,Yogesh Singh###
(1627561, 1627561)
 PrBi shows a magneticfield induced metal insulator transition below T<missing VAR> sim 20 K and a very largemagnetoresistance (approx 4.4 times 104) at low temperatures (T<missing VAR> 2 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Fermi surface topology and large magnetoresistance in the topological semimetal candidate PrBi|Amit Vashist,R. K. Gopal,Divya Srivastava,M. Karppinen,Yogesh Singh###
(1627596, 1627596)
 PrBi shows a magneticfield induced metal insulator transition below T<missing VAR> sim 20 K and a very largemagnetoresistance (approx 4.4 times 104) at low temperatures (T<missing VAR> 2 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Fermi surface topology and large magnetoresistance in the topological semimetal candidate PrBi|Amit Vashist,R. K. Gopal,Divya Srivastava,M. Karppinen,Yogesh Singh###
(1627644, 1627644)
We have also probed the Fermi surface topology by de Haas van Alphen (d<missing VAR>HvA) andShubnikov de Haas (SdH) quantum oscillation measurements complimented withdensity functional theory (DFT) calculations of the band structure and theFermi surface.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Fermi surface topology and large magnetoresistance in the topological semimetal candidate PrBi|Amit Vashist,R. K. Gopal,Divya Srivastava,M. Karppinen,Yogesh Singh###
(1627699, 1627699)
 Angle dependence of the SdH oscillations have been carried outto probe the possible signature of surface Dirac fermions.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CeGe
###Possibility of a new order parameter driven by multipolar moment and Fermi surface evolution in CeGe|Karan Singh,K. Mukherjee###
(1627941, 1627942)
Possibility of a new order parameter driven by multipolar moment and Fermi surface evolution in CeGe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 10.7, 'and', 2],[87.0, 7.3, 'K', 2],[159.0, 10.7, 'K', 3],[206.0, 7.3, 'K', 5],[263.0, 10.7, 'K', 7]

CeGe
###Possibility of a new order parameter driven by multipolar moment and Fermi surface evolution in CeGe|Karan Singh,K. Mukherjee###
(1627947, 1627948)
 Polycrystalline CeGe is investigated by means of D<missing VAR>C and AC susceptibility,non-linear D<missing VAR>C susceptibility, electrical transport and heat capacitymeasurements in the low temperature regime.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 10.7, 'and', 1],[81.0, 7.3, 'K', 1],[153.0, 10.7, 'K', 2],[200.0, 7.3, 'K', 4],[257.0, 10.7, 'K', 6]

C
###Possibility of a new order parameter driven by multipolar moment and Fermi surface evolution in CeGe|Karan Singh,K. Mukherjee###
(1627961, 1627961)
 Polycrystalline CeGe is investigated by means of D<missing VAR>C and AC susceptibility,non-linear D<missing VAR>C susceptibility, electrical transport and heat capacitymeasurements in the low temperature regime.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 10.7, 'and', 1],[68.0, 7.3, 'K', 1],[140.0, 10.7, 'K', 2],[187.0, 7.3, 'K', 4],[244.0, 10.7, 'K', 6]

C
###Possibility of a new order parameter driven by multipolar moment and Fermi surface evolution in CeGe|Karan Singh,K. Mukherjee###
(1627966, 1627966)
 Polycrystalline CeGe is investigated by means of D<missing VAR>C and AC susceptibility,non-linear D<missing VAR>C susceptibility, electrical transport and heat capacitymeasurements in the low temperature regime.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 10.7, 'and', 1],[63.0, 7.3, 'K', 1],[135.0, 10.7, 'K', 2],[182.0, 7.3, 'K', 4],[239.0, 10.7, 'K', 6]

C
###Possibility of a new order parameter driven by multipolar moment and Fermi surface evolution in CeGe|Karan Singh,K. Mukherjee###
(1627977, 1627977)
 Polycrystalline CeGe is investigated by means of D<missing VAR>C and AC susceptibility,non-linear D<missing VAR>C susceptibility, electrical transport and heat capacitymeasurements in the low temperature regime.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 10.7, 'and', 1],[52.0, 7.3, 'K', 1],[124.0, 10.7, 'K', 2],[171.0, 7.3, 'K', 4],[228.0, 10.7, 'K', 6]

C
###Possibility of a new order parameter driven by multipolar moment and Fermi surface evolution in CeGe|Karan Singh,K. Mukherjee###
(1628061, 1628061)
 Investigation ofnon-linear D<missing VAR>C susceptibility reveals a presence of higher order magnetizationwhich results in the development of a new order parameter around 10.7 K.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 10.7, 'and', 1],[32.0, 7.3, 'K', 1],[40.0, 10.7, 'K', 0],[87.0, 7.3, 'K', 2],[144.0, 10.7, 'K', 4]

FeSe1-xS
###Anomalous high-magnetic field electronic state of the nematic superconductors FeSe$_{1-x}$S$_x$|M. Bristow,P. Reiss,A. A. Haghighirad,Z. Zajicek,S. J. Singh,T. Wolf,D. Graf,W. Knafo,A. McCollam,A. I. Coldea###
(1628349, 1628354)
Anomalous high-magnetic field electronic state of the nematic superconductors FeSe1-xSx<missing VAR>.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[125.0, 69, 'T', 3]

FeSe1-xS
###Anomalous high-magnetic field electronic state of the nematic superconductors FeSe$_{1-x}$S$_x$|M. Bristow,P. Reiss,A. A. Haghighirad,Z. Zajicek,S. J. Singh,T. Wolf,D. Graf,W. Knafo,A. McCollam,A. I. Coldea###
(1628449, 1628454)
 Here, we investigate the normaltransport of superconducting FeSe1-xSx<missing VAR> across a nematic phasetransition using high magnetic fields up to 69 T to establish the temperatureand field-dependencies.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[25.0, 69, 'T', 0]

H1.55
###Anomalous high-magnetic field electronic state of the nematic superconductors FeSe$_{1-x}$S$_x$|M. Bristow,P. Reiss,A. A. Haghighirad,Z. Zajicek,S. J. Singh,T. Wolf,D. Graf,W. Knafo,A. McCollam,A. I. Coldea###
(1628628, 1628629)
 The transverse magnetoresistance inside thenematic phase has as a H1.55 dependence over a large magnetic field rangeand it displays an unusual peak at low temperatures inside the nematic phase.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 69, 'T', 3]

BiSbTeSe2
###Tuning insulator-semimetal transitions in 3D topological insulator thin films by inter-surface hybridization and in-plane magnetic fields|Yang Xu,Guodong Jiang,Ireneusz Miotkowski,Rudro R. Biswas,Yong P. Chen###
(1628916, 1628920)
 Here, we reporttransport studies on thin films of BiSbTeSe2 (BST<missing VAR>S), which is a 3D T<missing VAR>I thathosts spin-helical gapless (semi-metallic) Dirac fermion surface states (SS)for sufficiently thick samples, with an observed resistivity close to h<missing VAR>/4e<missing VAR>2at the charge neutral point.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 3, 'D', 2],[15.0, 3, 'D', 0],[232.0, -95, '%', 2],[391.0, 2, 'D', 4],[406.0, 2, 'single', 4]

BS
###Tuning insulator-semimetal transitions in 3D topological insulator thin films by inter-surface hybridization and in-plane magnetic fields|Yang Xu,Guodong Jiang,Ireneusz Miotkowski,Rudro R. Biswas,Yong P. Chen###
(1628923, 1628924)
 Here, we reporttransport studies on thin films of BiSbTeSe2 (BST<missing VAR>S), which is a 3D T<missing VAR>I thathosts spin-helical gapless (semi-metallic) Dirac fermion surface states (SS)for sufficiently thick samples, with an observed resistivity close to h<missing VAR>/4e<missing VAR>2at the charge neutral point.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 3, 'D', 2],[11.0, 3, 'D', 0],[228.0, -95, '%', 2],[387.0, 2, 'D', 4],[402.0, 2, 'single', 4]

S
###Tuning insulator-semimetal transitions in 3D topological insulator thin films by inter-surface hybridization and in-plane magnetic fields|Yang Xu,Guodong Jiang,Ireneusz Miotkowski,Rudro R. Biswas,Yong P. Chen###
(1628926, 1628926)
 Here, we reporttransport studies on thin films of BiSbTeSe2 (BST<missing VAR>S), which is a 3D T<missing VAR>I thathosts spin-helical gapless (semi-metallic) Dirac fermion surface states (SS)for sufficiently thick samples, with an observed resistivity close to h<missing VAR>/4e<missing VAR>2at the charge neutral point.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 3, 'D', 2],[9.0, 3, 'D', 0],[226.0, -95, '%', 2],[385.0, 2, 'D', 4],[400.0, 2, 'single', 4]

I
###Tuning insulator-semimetal transitions in 3D topological insulator thin films by inter-surface hybridization and in-plane magnetic fields|Yang Xu,Guodong Jiang,Ireneusz Miotkowski,Rudro R. Biswas,Yong P. Chen###
(1628938, 1628938)
 Here, we reporttransport studies on thin films of BiSbTeSe2 (BST<missing VAR>S), which is a 3D T<missing VAR>I thathosts spin-helical gapless (semi-metallic) Dirac fermion surface states (SS)for sufficiently thick samples, with an observed resistivity close to h<missing VAR>/4e<missing VAR>2at the charge neutral point.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 3, 'D', 2],[3.0, 3, 'D', 0],[214.0, -95, '%', 2],[373.0, 2, 'D', 4],[388.0, 2, 'single', 4]

(SS)
###Tuning insulator-semimetal transitions in 3D topological insulator thin films by inter-surface hybridization and in-plane magnetic fields|Yang Xu,Guodong Jiang,Ireneusz Miotkowski,Rudro R. Biswas,Yong P. Chen###
(1628965, 1628968)
 Here, we reporttransport studies on thin films of BiSbTeSe2 (BST<missing VAR>S), which is a 3D T<missing VAR>I thathosts spin-helical gapless (semi-metallic) Dirac fermion surface states (SS)for sufficiently thick samples, with an observed resistivity close to h<missing VAR>/4e<missing VAR>2at the charge neutral point.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[194.0, 3, 'D', 2],[30.0, 3, 'D', 0],[184.0, -95, '%', 2],[343.0, 2, 'D', 4],[358.0, 2, 'single', 4]

Fe3GeTe2
###Spin-dependent transport in van der Waals magnetic tunnel junctions with Fe3GeTe2 electrodes|Xinlu Li,Evgeny Y. Tsymbal,Jing-Tao Lü,Jia Zhang,Long You,Yurong Su###
(1629376, 1629380)
Spin-dependent transport in van der Waals magnetic tunnel junctions with Fe3GeTe2 electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Spin-dependent transport in van der Waals magnetic tunnel junctions with Fe3GeTe2 electrodes|Xinlu Li,Evgeny Y. Tsymbal,Jing-Tao Lü,Jia Zhang,Long You,Yurong Su###
(1629393, 1629393)
 Van der Waals (vdW) heterostructures, stacking different two-dimensionalmaterials, have opened up unprecedented opportunities to explore new physicsand device concepts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Spin-dependent transport in van der Waals magnetic tunnel junctions with Fe3GeTe2 electrodes|Xinlu Li,Evgeny Y. Tsymbal,Jing-Tao Lü,Jia Zhang,Long You,Yurong Su###
(1629455, 1629455)
 Especially interesting are recently discoveredtwo-dimensional magnetic vdW materials, providing new paradigms for spintronicapplications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Spin-dependent transport in van der Waals magnetic tunnel junctions with Fe3GeTe2 electrodes|Xinlu Li,Evgeny Y. Tsymbal,Jing-Tao Lü,Jia Zhang,Long You,Yurong Su###
(1629512, 1629512)
 Here, using density functional theory (DFT) calculations, weinvestigate the spin-dependent electronic transport across vdW magnetic tunneljunctions (MTJs) composed of Fe3GeTe2 ferromagnetic electrodes and a grapheneor hexagonal boron nitride (h<missing VAR>-BN) spacer layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe3GeTe2
###Spin-dependent transport in van der Waals magnetic tunnel junctions with Fe3GeTe2 electrodes|Xinlu Li,Evgeny Y. Tsymbal,Jing-Tao Lü,Jia Zhang,Long You,Yurong Su###
(1629531, 1629535)
 Here, using density functional theory (DFT) calculations, weinvestigate the spin-dependent electronic transport across vdW magnetic tunneljunctions (MTJs) composed of Fe3GeTe2 ferromagnetic electrodes and a grapheneor hexagonal boron nitride (h<missing VAR>-BN) spacer layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Spin-dependent transport in van der Waals magnetic tunnel junctions with Fe3GeTe2 electrodes|Xinlu Li,Evgeny Y. Tsymbal,Jing-Tao Lü,Jia Zhang,Long You,Yurong Su###
(1629560, 1629560)
 Here, using density functional theory (DFT) calculations, weinvestigate the spin-dependent electronic transport across vdW magnetic tunneljunctions (MTJs) composed of Fe3GeTe2 ferromagnetic electrodes and a grapheneor hexagonal boron nitride (h<missing VAR>-BN) spacer layer.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe3GeTe2
###Spin-dependent transport in van der Waals magnetic tunnel junctions with Fe3GeTe2 electrodes|Xinlu Li,Evgeny Y. Tsymbal,Jing-Tao Lü,Jia Zhang,Long You,Yurong Su###
(1629674, 1629678)
 Sucha giant tunneling magnetoresistance (TMR) effect is driven by dissimilarelectronic structure of the two spin-conducting channels in Fe3GeTe2, resultingin a mismatch between the incoming and outgoing Bloch states in the electrodesand thus suppressed transmission for an antiparallel-aligned MTJ.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Spin-dependent transport in van der Waals magnetic tunnel junctions with Fe3GeTe2 electrodes|Xinlu Li,Evgeny Y. Tsymbal,Jing-Tao Lü,Jia Zhang,Long You,Yurong Su###
(1629735, 1629735)
 The vdWbounding between electrodes and a spacer layer makes this result virtuallyindependent of the type of the spacer layer, making the predicted giant TMReffect robust with respect to strain, lattice mismatch, interface distance andother parameters which may vary in the experiment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Spin-dependent transport in van der Waals magnetic tunnel junctions with Fe3GeTe2 electrodes|Xinlu Li,Evgeny Y. Tsymbal,Jing-Tao Lü,Jia Zhang,Long You,Yurong Su###
(1629857, 1629857)
 We hope that our resultswill further stimulate experimental studies of vdW MTJs and pave the way fortheir applications in spintronics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrVO3
###Tuning the metal-insulator transition in epitaxial SrVO3 films by uniaxial strain|Changan Wang,Hongbin Zhang,Kumar Deepak,5Chao Chen,Arnaud Fouchet,Juanmei Duan,Donovan Hilliard,Ulrich Kentsch,Deyang Chen,Min Zeng,Xingsen Gao,Yu-Jia Zeng,Manfred Helm,Wilfrid Prellier,Shengqiang Zhou###
(1629905, 1629908)
Tuning the metal-insulator transition in epitaxial SrVO3 films by uniaxial strain.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrVO3
###Tuning the metal-insulator transition in epitaxial SrVO3 films by uniaxial strain|Changan Wang,Hongbin Zhang,Kumar Deepak,5Chao Chen,Arnaud Fouchet,Juanmei Duan,Donovan Hilliard,Ulrich Kentsch,Deyang Chen,Min Zeng,Xingsen Gao,Yu-Jia Zeng,Manfred Helm,Wilfrid Prellier,Shengqiang Zhou###
(1630024, 1630027)
 Here we report an effective tuning of the MIT in epitaxialSrVO3 (SVO) films by expanding the out-of-plane lattice constant withoutchanging in-plane lattice parameters, through helium ion irradiation.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(SVO)
###Tuning the metal-insulator transition in epitaxial SrVO3 films by uniaxial strain|Changan Wang,Hongbin Zhang,Kumar Deepak,5Chao Chen,Arnaud Fouchet,Juanmei Duan,Donovan Hilliard,Ulrich Kentsch,Deyang Chen,Min Zeng,Xingsen Gao,Yu-Jia Zeng,Manfred Helm,Wilfrid Prellier,Shengqiang Zhou###
(1630029, 1630033)
 Here we report an effective tuning of the MIT in epitaxialSrVO3 (SVO) films by expanding the out-of-plane lattice constant withoutchanging in-plane lattice parameters, through helium ion irradiation.
Featurization successful!
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SVO
###Tuning the metal-insulator transition in epitaxial SrVO3 films by uniaxial strain|Changan Wang,Hongbin Zhang,Kumar Deepak,5Chao Chen,Arnaud Fouchet,Juanmei Duan,Donovan Hilliard,Ulrich Kentsch,Deyang Chen,Min Zeng,Xingsen Gao,Yu-Jia Zeng,Manfred Helm,Wilfrid Prellier,Shengqiang Zhou###
(1630119, 1630121)
 Uponincrease of the ion fluence, we observe a MIT with a crossover from metallic toinsulating state in SVO films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SVO
###Tuning the metal-insulator transition in epitaxial SrVO3 films by uniaxial strain|Changan Wang,Hongbin Zhang,Kumar Deepak,5Chao Chen,Arnaud Fouchet,Juanmei Duan,Donovan Hilliard,Ulrich Kentsch,Deyang Chen,Min Zeng,Xingsen Gao,Yu-Jia Zeng,Manfred Helm,Wilfrid Prellier,Shengqiang Zhou###
(1630143, 1630145)
 A combination of transport and magnetoresistancemeasurements in SVO at low temperatures reveals that the observed MIT is mainlyascribed to electron-electron interactions rather than disorder-inducedlocalization.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Tuning the metal-insulator transition in epitaxial SrVO3 films by uniaxial strain|Changan Wang,Hongbin Zhang,Kumar Deepak,5Chao Chen,Arnaud Fouchet,Juanmei Duan,Donovan Hilliard,Ulrich Kentsch,Deyang Chen,Min Zeng,Xingsen Gao,Yu-Jia Zeng,Manfred Helm,Wilfrid Prellier,Shengqiang Zhou###
(1630236, 1630236)
 Moreover, these results are well supported by the combination ofdensity functional theory and dynamical mean field theory (DFTDMFT)calculations, further confirming the decrease of the bandwidth and the enhancedelectron-electron interactions resulting from the expansion of out-of-planelattice constant.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PdSb2
###Fermions and bosons in nonsymmorphic PdSb2 with sixfold degeneracy|Ramakanta Chapai,Yating Jia,W. A. Shelton,Roshan Nepal,Mohammad Saghayezhian,J. F. DiTusa,E. W. Plummer,Changqing Jin,Rongying Jin###
(1630370, 1630372)
Fermions and bosons in nonsymmorphic PdSb2 with sixfold degeneracy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 14, 'T', 4],[276.0, 102, 'T', 6]

PdSb2
###Fermions and bosons in nonsymmorphic PdSb2 with sixfold degeneracy|Ramakanta Chapai,Yating Jia,W. A. Shelton,Roshan Nepal,Mohammad Saghayezhian,J. F. DiTusa,E. W. Plummer,Changqing Jin,Rongying Jin###
(1630381, 1630383)
 PdSb2 is a candidate for hosting 6-fold-degenerate exotic fermions (beyondDirac and Weyl fermions).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[168.0, 14, 'T', 3],[265.0, 102, 'T', 5]

PdSb2
###Fermions and bosons in nonsymmorphic PdSb2 with sixfold degeneracy|Ramakanta Chapai,Yating Jia,W. A. Shelton,Roshan Nepal,Mohammad Saghayezhian,J. F. DiTusa,E. W. Plummer,Changqing Jin,Rongying Jin###
(1630469, 1630471)
 We havegrown high-quality single crystals of PdSb2 and characterized their physicalproperties under several stimuli (temperature, magnetic field, and pressure).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 14, 'T', 1],[177.0, 102, 'T', 3]

PdSb2
###Fermions and bosons in nonsymmorphic PdSb2 with sixfold degeneracy|Ramakanta Chapai,Yating Jia,W. A. Shelton,Roshan Nepal,Mohammad Saghayezhian,J. F. DiTusa,E. W. Plummer,Changqing Jin,Rongying Jin###
(1630529, 1630531)
While it is a diamagnetic Fermi-liquid metal under ambient pressure, PdSb2exhibits a large magnetoresistance with continuous increase up to 14 T, whichfollows the Kohlers<missing VAR> scaling law at all temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 14, 'T', 0],[117.0, 102, 'T', 2]

Tc
###Fermions and bosons in nonsymmorphic PdSb2 with sixfold degeneracy|Ramakanta Chapai,Yating Jia,W. A. Shelton,Roshan Nepal,Mohammad Saghayezhian,J. F. DiTusa,E. W. Plummer,Changqing Jin,Rongying Jin###
(1630750, 1630750)
 Under quasihydrostaticpressure (p), evidence for superconductivity is observed in the resistivitybelow the critical temperature Tc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[199.0, 14, 'T', 4],[102.0, 102, 'T', 2]

Tc
###Fermions and bosons in nonsymmorphic PdSb2 with sixfold degeneracy|Ramakanta Chapai,Yating Jia,W. A. Shelton,Roshan Nepal,Mohammad Saghayezhian,J. F. DiTusa,E. W. Plummer,Changqing Jin,Rongying Jin###
(1630759, 1630759)
 The dome-shaped Tc versus p<missing VAR> is obtained withmaximum Tc2.9 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[208.0, 14, 'T', 5],[111.0, 102, 'T', 3]

Tc2.9
###Fermions and bosons in nonsymmorphic PdSb2 with sixfold degeneracy|Ramakanta Chapai,Yating Jia,W. A. Shelton,Roshan Nepal,Mohammad Saghayezhian,J. F. DiTusa,E. W. Plummer,Changqing Jin,Rongying Jin###
(1630774, 1630775)
 The dome-shaped Tc versus p<missing VAR> is obtained withmaximum Tc2.9 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[223.0, 14, 'T', 5],[126.0, 102, 'T', 3]

K
###Fermions and bosons in nonsymmorphic PdSb2 with sixfold degeneracy|Ramakanta Chapai,Yating Jia,W. A. Shelton,Roshan Nepal,Mohammad Saghayezhian,J. F. DiTusa,E. W. Plummer,Changqing Jin,Rongying Jin###
(1630777, 1630777)
 The dome-shaped Tc versus p<missing VAR> is obtained withmaximum Tc2.9 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[226.0, 14, 'T', 5],[129.0, 102, 'T', 3]

Gd/Co
###Antisymmetric magnetoresistance and helical magnetic structure in compensated Gd/Co multilayer|Surendra Singh,M. A. Basha,C. L. Prajapat,Harsh Bhatt,Yogesh Kumar,M. Gupta,C. J. Kinane,J. Cooper,M. R. Gonal,S. Langridge,S. Basu###
(1630855, 1630857)
Antisymmetric magnetoresistance and helical magnetic structure in compensated Gd/Co multilayer.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

PN
###Antisymmetric magnetoresistance and helical magnetic structure in compensated Gd/Co multilayer|Surendra Singh,M. A. Basha,C. L. Prajapat,Harsh Bhatt,Yogesh Kumar,M. Gupta,C. J. Kinane,J. Cooper,M. R. Gonal,S. Langridge,S. Basu###
(1630884, 1630885)
 Using spin dependent specular and off-specular polarized neutron reflectivity(PNR), we report the observation of a twisted helical magnetic structure withplanar 2pi domain wall (D<missing VAR>W) and highly correlated magnetic domains in aGd/Co multilayer.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Antisymmetric magnetoresistance and helical magnetic structure in compensated Gd/Co multilayer|Surendra Singh,M. A. Basha,C. L. Prajapat,Harsh Bhatt,Yogesh Kumar,M. Gupta,C. J. Kinane,J. Cooper,M. R. Gonal,S. Langridge,S. Basu###
(1630924, 1630924)
 Using spin dependent specular and off-specular polarized neutron reflectivity(PNR), we report the observation of a twisted helical magnetic structure withplanar 2pi domain wall (D<missing VAR>W) and highly correlated magnetic domains in aGd/Co multilayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Gd/Co
###Antisymmetric magnetoresistance and helical magnetic structure in compensated Gd/Co multilayer|Surendra Singh,M. A. Basha,C. L. Prajapat,Harsh Bhatt,Yogesh Kumar,M. Gupta,C. J. Kinane,J. Cooper,M. R. Gonal,S. Langridge,S. Basu###
(1630942, 1630944)
 Using spin dependent specular and off-specular polarized neutron reflectivity(PNR), we report the observation of a twisted helical magnetic structure withplanar 2pi domain wall (D<missing VAR>W) and highly correlated magnetic domains in aGd/Co multilayer.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

PN
###Antisymmetric magnetoresistance and helical magnetic structure in compensated Gd/Co multilayer|Surendra Singh,M. A. Basha,C. L. Prajapat,Harsh Bhatt,Yogesh Kumar,M. Gupta,C. J. Kinane,J. Cooper,M. R. Gonal,S. Langridge,S. Basu###
(1630951, 1630952)
 Specular PNR<missing VAR> with polarization analysis reveals the formationof planar 2piD<missing VAR>Ws below a compensation temperature (T<missing VAR>Comp), resulting topositive exchange bias in this system.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PN
###Antisymmetric magnetoresistance and helical magnetic structure in compensated Gd/Co multilayer|Surendra Singh,M. A. Basha,C. L. Prajapat,Harsh Bhatt,Yogesh Kumar,M. Gupta,C. J. Kinane,J. Cooper,M. R. Gonal,S. Langridge,S. Basu###
(1631013, 1631014)
 Off-specular PNR<missing VAR> with spin polarizationshowed development of magnetic inhomogenities (increase in magnetic roughness)for central part (thickness  25-30 AA) of each Gd layer, wheremagnetization is aligned perpendicular (in-plane) to an applied field.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Gd
###Antisymmetric magnetoresistance and helical magnetic structure in compensated Gd/Co multilayer|Surendra Singh,M. A. Basha,C. L. Prajapat,Harsh Bhatt,Yogesh Kumar,M. Gupta,C. J. Kinane,J. Cooper,M. R. Gonal,S. Langridge,S. Basu###
(1631067, 1631067)
 Off-specular PNR<missing VAR> with spin polarizationshowed development of magnetic inhomogenities (increase in magnetic roughness)for central part (thickness  25-30 AA) of each Gd layer, wheremagnetization is aligned perpendicular (in-plane) to an applied field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PN
###Antisymmetric magnetoresistance and helical magnetic structure in compensated Gd/Co multilayer|Surendra Singh,M. A. Basha,C. L. Prajapat,Harsh Bhatt,Yogesh Kumar,M. Gupta,C. J. Kinane,J. Cooper,M. R. Gonal,S. Langridge,S. Basu###
(1631136, 1631137)
 Thesemagnetic roughness are vertically correlated and results into Bragg sheet inspin flip channel of Off-specular PNR<missing VAR> data, which is contributing towards anantisymmetric magnetoresistance at T<missing VAR>Comp in the system.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

InP
###On the Angular Dependence of InP High Electron Mobility Transistors for Cryogenic Low Noise Amplifiers in a Magnetic Field|Isabel Harrysson Rodrigues,David Niepce,Arsalan Pourkabirian,Giuseppe Moschetti,Joel Schleeh,Thilo Bauch,Jan Grahn###
(1631268, 1631269)
On the Angular Dependence of InP High Electron Mobility Transistors for Cryogenic Low Noise Amplifiers in a Magnetic Field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 2, 'K', 2],[184.0, 1.5, 'T', 2],[202.0, 2, 'K', 3],[241.0, 14, 'T', 3]

InGaAs
###On the Angular Dependence of InP High Electron Mobility Transistors for Cryogenic Low Noise Amplifiers in a Magnetic Field|Isabel Harrysson Rodrigues,David Niepce,Arsalan Pourkabirian,Giuseppe Moschetti,Joel Schleeh,Thilo Bauch,Jan Grahn###
(1631300, 1631302)
 The InGaAs-InAlAs-InP high electron mobility transistor (InP HEMT) is thepreferred active device used in a cryogenic low noise amplifier (L<missing VAR>NA) forsensitive detection of microwave signals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 2, 'K', 1],[151.0, 1.5, 'T', 1],[169.0, 2, 'K', 2],[208.0, 14, 'T', 2]

InAlAs
###On the Angular Dependence of InP High Electron Mobility Transistors for Cryogenic Low Noise Amplifiers in a Magnetic Field|Isabel Harrysson Rodrigues,David Niepce,Arsalan Pourkabirian,Giuseppe Moschetti,Joel Schleeh,Thilo Bauch,Jan Grahn###
(1631304, 1631306)
 The InGaAs-InAlAs-InP high electron mobility transistor (InP HEMT) is thepreferred active device used in a cryogenic low noise amplifier (L<missing VAR>NA) forsensitive detection of microwave signals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 2, 'K', 1],[147.0, 1.5, 'T', 1],[165.0, 2, 'K', 2],[204.0, 14, 'T', 2]

InP
###On the Angular Dependence of InP High Electron Mobility Transistors for Cryogenic Low Noise Amplifiers in a Magnetic Field|Isabel Harrysson Rodrigues,David Niepce,Arsalan Pourkabirian,Giuseppe Moschetti,Joel Schleeh,Thilo Bauch,Jan Grahn###
(1631308, 1631309)
 The InGaAs-InAlAs-InP high electron mobility transistor (InP HEMT) is thepreferred active device used in a cryogenic low noise amplifier (L<missing VAR>NA) forsensitive detection of microwave signals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 2, 'K', 1],[144.0, 1.5, 'T', 1],[162.0, 2, 'K', 2],[201.0, 14, 'T', 2]

InP
###On the Angular Dependence of InP High Electron Mobility Transistors for Cryogenic Low Noise Amplifiers in a Magnetic Field|Isabel Harrysson Rodrigues,David Niepce,Arsalan Pourkabirian,Giuseppe Moschetti,Joel Schleeh,Thilo Bauch,Jan Grahn###
(1631320, 1631321)
 The InGaAs-InAlAs-InP high electron mobility transistor (InP HEMT) is thepreferred active device used in a cryogenic low noise amplifier (L<missing VAR>NA) forsensitive detection of microwave signals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 2, 'K', 1],[132.0, 1.5, 'T', 1],[150.0, 2, 'K', 2],[189.0, 14, 'T', 2]

H
###On the Angular Dependence of InP High Electron Mobility Transistors for Cryogenic Low Noise Amplifiers in a Magnetic Field|Isabel Harrysson Rodrigues,David Niepce,Arsalan Pourkabirian,Giuseppe Moschetti,Joel Schleeh,Thilo Bauch,Jan Grahn###
(1631323, 1631323)
 The InGaAs-InAlAs-InP high electron mobility transistor (InP HEMT) is thepreferred active device used in a cryogenic low noise amplifier (L<missing VAR>NA) forsensitive detection of microwave signals.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 2, 'K', 1],[130.0, 1.5, 'T', 1],[148.0, 2, 'K', 2],[187.0, 14, 'T', 2]

N
###On the Angular Dependence of InP High Electron Mobility Transistors for Cryogenic Low Noise Amplifiers in a Magnetic Field|Isabel Harrysson Rodrigues,David Niepce,Arsalan Pourkabirian,Giuseppe Moschetti,Joel Schleeh,Thilo Bauch,Jan Grahn###
(1631356, 1631356)
 The InGaAs-InAlAs-InP high electron mobility transistor (InP HEMT) is thepreferred active device used in a cryogenic low noise amplifier (L<missing VAR>NA) forsensitive detection of microwave signals.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 2, 'K', 1],[97.0, 1.5, 'T', 1],[115.0, 2, 'K', 2],[154.0, 14, 'T', 2]

InP
###On the Angular Dependence of InP High Electron Mobility Transistors for Cryogenic Low Noise Amplifiers in a Magnetic Field|Isabel Harrysson Rodrigues,David Niepce,Arsalan Pourkabirian,Giuseppe Moschetti,Joel Schleeh,Thilo Bauch,Jan Grahn###
(1631382, 1631383)
 We observed that an InP HEMT0.3-14G<missing VAR>Hz L<missing VAR>NA at 2K, where the in-going transistors were oriented perpendicularto a magnetic field, heavily degraded in gain and average noise temperaturealready up to 1.5T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 2, 'K', 0],[70.0, 1.5, 'T', 0],[88.0, 2, 'K', 1],[127.0, 14, 'T', 1]

H
###On the Angular Dependence of InP High Electron Mobility Transistors for Cryogenic Low Noise Amplifiers in a Magnetic Field|Isabel Harrysson Rodrigues,David Niepce,Arsalan Pourkabirian,Giuseppe Moschetti,Joel Schleeh,Thilo Bauch,Jan Grahn###
(1631385, 1631385)
 We observed that an InP HEMT0.3-14G<missing VAR>Hz L<missing VAR>NA at 2K, where the in-going transistors were oriented perpendicularto a magnetic field, heavily degraded in gain and average noise temperaturealready up to 1.5T.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 2, 'K', 0],[68.0, 1.5, 'T', 0],[86.0, 2, 'K', 1],[125.0, 14, 'T', 1]

N
###On the Angular Dependence of InP High Electron Mobility Transistors for Cryogenic Low Noise Amplifiers in a Magnetic Field|Isabel Harrysson Rodrigues,David Niepce,Arsalan Pourkabirian,Giuseppe Moschetti,Joel Schleeh,Thilo Bauch,Jan Grahn###
(1631398, 1631398)
 We observed that an InP HEMT0.3-14G<missing VAR>Hz L<missing VAR>NA at 2K, where the in-going transistors were oriented perpendicularto a magnetic field, heavily degraded in gain and average noise temperaturealready up to 1.5T.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 2, 'K', 0],[55.0, 1.5, 'T', 0],[73.0, 2, 'K', 1],[112.0, 14, 'T', 1]

InP
###On the Angular Dependence of InP High Electron Mobility Transistors for Cryogenic Low Noise Amplifiers in a Magnetic Field|Isabel Harrysson Rodrigues,David Niepce,Arsalan Pourkabirian,Giuseppe Moschetti,Joel Schleeh,Thilo Bauch,Jan Grahn###
(1631462, 1631463)
 Dc measurements for InP HEMTs at 2K revealed a strongreduction in the transistor output current as a function of static magneticfield up to 14T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 2, 'K', 1],[9.0, 1.5, 'T', 1],[8.0, 2, 'K', 0],[47.0, 14, 'T', 0]

H
###On the Angular Dependence of InP High Electron Mobility Transistors for Cryogenic Low Noise Amplifiers in a Magnetic Field|Isabel Harrysson Rodrigues,David Niepce,Arsalan Pourkabirian,Giuseppe Moschetti,Joel Schleeh,Thilo Bauch,Jan Grahn###
(1631465, 1631465)
 Dc measurements for InP HEMTs at 2K revealed a strongreduction in the transistor output current as a function of static magneticfield up to 14T.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 2, 'K', 1],[12.0, 1.5, 'T', 1],[6.0, 2, 'K', 0],[45.0, 14, 'T', 0]

In
###On the Angular Dependence of InP High Electron Mobility Transistors for Cryogenic Low Noise Amplifiers in a Magnetic Field|Isabel Harrysson Rodrigues,David Niepce,Arsalan Pourkabirian,Giuseppe Moschetti,Joel Schleeh,Thilo Bauch,Jan Grahn###
(1631513, 1631513)
 In contrast, the current reduction was insignificant when theInP HEMT was oriented parallel to the magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 2, 'K', 2],[60.0, 1.5, 'T', 2],[42.0, 2, 'K', 1],[3.0, 14, 'T', 1]

InP
###On the Angular Dependence of InP High Electron Mobility Transistors for Cryogenic Low Noise Amplifiers in a Magnetic Field|Isabel Harrysson Rodrigues,David Niepce,Arsalan Pourkabirian,Giuseppe Moschetti,Joel Schleeh,Thilo Bauch,Jan Grahn###
(1631533, 1631534)
 In contrast, the current reduction was insignificant when theInP HEMT was oriented parallel to the magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 2, 'K', 2],[80.0, 1.5, 'T', 2],[62.0, 2, 'K', 1],[23.0, 14, 'T', 1]

H
###On the Angular Dependence of InP High Electron Mobility Transistors for Cryogenic Low Noise Amplifiers in a Magnetic Field|Isabel Harrysson Rodrigues,David Niepce,Arsalan Pourkabirian,Giuseppe Moschetti,Joel Schleeh,Thilo Bauch,Jan Grahn###
(1631536, 1631536)
 In contrast, the current reduction was insignificant when theInP HEMT was oriented parallel to the magnetic field.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 2, 'K', 2],[83.0, 1.5, 'T', 2],[65.0, 2, 'K', 1],[26.0, 14, 'T', 1]

InP
###On the Angular Dependence of InP High Electron Mobility Transistors for Cryogenic Low Noise Amplifiers in a Magnetic Field|Isabel Harrysson Rodrigues,David Niepce,Arsalan Pourkabirian,Giuseppe Moschetti,Joel Schleeh,Thilo Bauch,Jan Grahn###
(1631603, 1631604)
 Given the transistorlayout with large gate width/gate length ratio, the results suggest a stronggeometrical magnetoresistance effect occurring in the InP HEMT.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[201.0, 2, 'K', 3],[150.0, 1.5, 'T', 3],[132.0, 2, 'K', 2],[93.0, 14, 'T', 2]

H
###On the Angular Dependence of InP High Electron Mobility Transistors for Cryogenic Low Noise Amplifiers in a Magnetic Field|Isabel Harrysson Rodrigues,David Niepce,Arsalan Pourkabirian,Giuseppe Moschetti,Joel Schleeh,Thilo Bauch,Jan Grahn###
(1631606, 1631606)
 Given the transistorlayout with large gate width/gate length ratio, the results suggest a stronggeometrical magnetoresistance effect occurring in the InP HEMT.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[204.0, 2, 'K', 3],[153.0, 1.5, 'T', 3],[135.0, 2, 'K', 2],[96.0, 14, 'T', 2]

InP
###On the Angular Dependence of InP High Electron Mobility Transistors for Cryogenic Low Noise Amplifiers in a Magnetic Field|Isabel Harrysson Rodrigues,David Niepce,Arsalan Pourkabirian,Giuseppe Moschetti,Joel Schleeh,Thilo Bauch,Jan Grahn###
(1631702, 1631703)
 The strong angular dependence of the InP HEMT output current in amagnetic field has important implications for the alignment of cryogenic L<missing VAR>NAsin microwave detection experiments involving magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[300.0, 2, 'K', 6],[249.0, 1.5, 'T', 6],[231.0, 2, 'K', 5],[192.0, 14, 'T', 5]

H
###On the Angular Dependence of InP High Electron Mobility Transistors for Cryogenic Low Noise Amplifiers in a Magnetic Field|Isabel Harrysson Rodrigues,David Niepce,Arsalan Pourkabirian,Giuseppe Moschetti,Joel Schleeh,Thilo Bauch,Jan Grahn###
(1631705, 1631705)
 The strong angular dependence of the InP HEMT output current in amagnetic field has important implications for the alignment of cryogenic L<missing VAR>NAsin microwave detection experiments involving magnetic fields.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[303.0, 2, 'K', 6],[252.0, 1.5, 'T', 6],[234.0, 2, 'K', 5],[195.0, 14, 'T', 5]

NAs
###On the Angular Dependence of InP High Electron Mobility Transistors for Cryogenic Low Noise Amplifiers in a Magnetic Field|Isabel Harrysson Rodrigues,David Niepce,Arsalan Pourkabirian,Giuseppe Moschetti,Joel Schleeh,Thilo Bauch,Jan Grahn###
(1631740, 1631741)
 The strong angular dependence of the InP HEMT output current in amagnetic field has important implications for the alignment of cryogenic L<missing VAR>NAsin microwave detection experiments involving magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[338.0, 2, 'K', 6],[287.0, 1.5, 'T', 6],[269.0, 2, 'K', 5],[230.0, 14, 'T', 5]

In
###Strong magnetoelectric coupling in mixed ferrimagnetic-multiferroic phases of a double perovskite|M. K. Kim,J. Y. Moon,S. H. Oh,D. G. Oh,Y. J. Choi,N. Lee###
(1631890, 1631890)
 In this study, it is observed that the dominant ferrimagnetic phase iscoexisted with a minor multiferroic phase in single-crystallinedouble-perovskite Er2CoMnO6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 10, 'K', 1],[132.0, 67, 'K', 1],[149.0, 3.15, 'K', 1],[212.0, 0.9, 'uC', 3],[218.0, 2, 'K', 3]

Er2CoMnO6
###Strong magnetoelectric coupling in mixed ferrimagnetic-multiferroic phases of a double perovskite|M. K. Kim,J. Y. Moon,S. H. Oh,D. G. Oh,Y. J. Choi,N. Lee###
(1631939, 1631944)
 In this study, it is observed that the dominant ferrimagnetic phase iscoexisted with a minor multiferroic phase in single-crystallinedouble-perovskite Er2CoMnO6.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 10, 'K', 1],[78.0, 67, 'K', 1],[95.0, 3.15, 'K', 1],[158.0, 0.9, 'uC', 3],[164.0, 2, 'K', 3]

Er3
###Strong magnetoelectric coupling in mixed ferrimagnetic-multiferroic phases of a double perovskite|M. K. Kim,J. Y. Moon,S. H. Oh,D. G. Oh,Y. J. Choi,N. Lee###
(1631978, 1631979)
 The majority portion of the ferrimagnetic order isactivated by the long-range order of Er3 moments below T<missing VAR>Er  10 K in additionto the ferromagnetic order of Co2 and Mn4 moments arising at T<missing VAR>C  67 K,characterized by compensated magnetization at T<missing VAR>Comp  3.15 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 10, 'K', 0],[43.0, 67, 'K', 0],[60.0, 3.15, 'K', 0],[123.0, 0.9, 'uC', 2],[129.0, 2, 'K', 2]

Er
###Strong magnetoelectric coupling in mixed ferrimagnetic-multiferroic phases of a double perovskite|M. K. Kim,J. Y. Moon,S. H. Oh,D. G. Oh,Y. J. Choi,N. Lee###
(1631986, 1631986)
 The majority portion of the ferrimagnetic order isactivated by the long-range order of Er3 moments below T<missing VAR>Er  10 K in additionto the ferromagnetic order of Co2 and Mn4 moments arising at T<missing VAR>C  67 K,characterized by compensated magnetization at T<missing VAR>Comp  3.15 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 10, 'K', 0],[36.0, 67, 'K', 0],[53.0, 3.15, 'K', 0],[116.0, 0.9, 'uC', 2],[122.0, 2, 'K', 2]

Co2
###Strong magnetoelectric coupling in mixed ferrimagnetic-multiferroic phases of a double perovskite|M. K. Kim,J. Y. Moon,S. H. Oh,D. G. Oh,Y. J. Choi,N. Lee###
(1632005, 1632006)
 The majority portion of the ferrimagnetic order isactivated by the long-range order of Er3 moments below T<missing VAR>Er  10 K in additionto the ferromagnetic order of Co2 and Mn4 moments arising at T<missing VAR>C  67 K,characterized by compensated magnetization at T<missing VAR>Comp  3.15 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 10, 'K', 0],[16.0, 67, 'K', 0],[33.0, 3.15, 'K', 0],[96.0, 0.9, 'uC', 2],[102.0, 2, 'K', 2]

Mn4
###Strong magnetoelectric coupling in mixed ferrimagnetic-multiferroic phases of a double perovskite|M. K. Kim,J. Y. Moon,S. H. Oh,D. G. Oh,Y. J. Choi,N. Lee###
(1632010, 1632011)
 The majority portion of the ferrimagnetic order isactivated by the long-range order of Er3 moments below T<missing VAR>Er  10 K in additionto the ferromagnetic order of Co2 and Mn4 moments arising at T<missing VAR>C  67 K,characterized by compensated magnetization at T<missing VAR>Comp  3.15 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 10, 'K', 0],[11.0, 67, 'K', 0],[28.0, 3.15, 'K', 0],[91.0, 0.9, 'uC', 2],[97.0, 2, 'K', 2]

C
###Strong magnetoelectric coupling in mixed ferrimagnetic-multiferroic phases of a double perovskite|M. K. Kim,J. Y. Moon,S. H. Oh,D. G. Oh,Y. J. Choi,N. Lee###
(1632020, 1632020)
 The majority portion of the ferrimagnetic order isactivated by the long-range order of Er3 moments below T<missing VAR>Er  10 K in additionto the ferromagnetic order of Co2 and Mn4 moments arising at T<missing VAR>C  67 K,characterized by compensated magnetization at T<missing VAR>Comp  3.15 K.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 10, 'K', 0],[2.0, 67, 'K', 0],[19.0, 3.15, 'K', 0],[82.0, 0.9, 'uC', 2],[88.0, 2, 'K', 2]

Er2CoMnO6
###Strong magnetoelectric coupling in mixed ferrimagnetic-multiferroic phases of a double perovskite|M. K. Kim,J. Y. Moon,S. H. Oh,D. G. Oh,Y. J. Choi,N. Lee###
(1632173, 1632178)
 The results based onintricate magnetic correlations and phases in Er2CoMnO6 enrich fundamental andapplied research on magnetic materials through the scope of distinct magneticcharacteristics in double perovskites.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[185.0, 10, 'K', 4],[151.0, 67, 'K', 4],[134.0, 3.15, 'K', 4],[71.0, 0.9, 'uC', 2],[65.0, 2, 'K', 2]

S
###Effective spin-mixing conductance of topological-insulator/ferromagnet and heavy-metal/ferromagnet spin-orbit-coupled interfaces: A first-principles Floquet-nonequilibrium-Green-function approach|Kapildeb Dolui,Utkarsh Bajpai,Branislav K. Nikolic###
(1632285, 1632285)
 The spin mixing conductance (SM<missing VAR>C) is a key quantity determining efficiency ofspin transport across interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Effective spin-mixing conductance of topological-insulator/ferromagnet and heavy-metal/ferromagnet spin-orbit-coupled interfaces: A first-principles Floquet-nonequilibrium-Green-function approach|Kapildeb Dolui,Utkarsh Bajpai,Branislav K. Nikolic###
(1632287, 1632287)
 The spin mixing conductance (SM<missing VAR>C) is a key quantity determining efficiency ofspin transport across interfaces.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Effective spin-mixing conductance of topological-insulator/ferromagnet and heavy-metal/ferromagnet spin-orbit-coupled interfaces: A first-principles Floquet-nonequilibrium-Green-function approach|Kapildeb Dolui,Utkarsh Bajpai,Branislav K. Nikolic###
(1632397, 1632397)
 However, the standard expression for SM<missing VAR>C, provided bythe scattering theory in terms of the reflection probability amplitudes, isinapplicable when strong spin-orbit coupling (SOC) is present directly at theinterface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Effective spin-mixing conductance of topological-insulator/ferromagnet and heavy-metal/ferromagnet spin-orbit-coupled interfaces: A first-principles Floquet-nonequilibrium-Green-function approach|Kapildeb Dolui,Utkarsh Bajpai,Branislav K. Nikolic###
(1632399, 1632399)
 However, the standard expression for SM<missing VAR>C, provided bythe scattering theory in terms of the reflection probability amplitudes, isinapplicable when strong spin-orbit coupling (SOC) is present directly at theinterface.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(SOC)
###Effective spin-mixing conductance of topological-insulator/ferromagnet and heavy-metal/ferromagnet spin-orbit-coupled interfaces: A first-principles Floquet-nonequilibrium-Green-function approach|Kapildeb Dolui,Utkarsh Bajpai,Branislav K. Nikolic###
(1632443, 1632447)
 However, the standard expression for SM<missing VAR>C, provided bythe scattering theory in terms of the reflection probability amplitudes, isinapplicable when strong spin-orbit coupling (SOC) is present directly at theinterface.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

IS
###Effective spin-mixing conductance of topological-insulator/ferromagnet and heavy-metal/ferromagnet spin-orbit-coupled interfaces: A first-principles Floquet-nonequilibrium-Green-function approach|Kapildeb Dolui,Utkarsh Bajpai,Branislav K. Nikolic###
(1632588, 1632589)
 Weintroduce an approach where first-principles Hamiltonian of these interfaces,obtained from noncollinear density functional theory (ncDFT) calculations, iscombined with charge conserving Floquet-nonequilibrium-Green-function formalismto compute em directly the pumped spin current ISz<missing VAR> into semi-infiniteleft lead of two-terminal heterostructures Cu/X<missing VAR>/Co/Cu or Y/Co/Cu---whereX<missing VAR>Bi2Se3 and YPt or W---due to microwave-driven steadily precessingmagnetization of the Co layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Effective spin-mixing conductance of topological-insulator/ferromagnet and heavy-metal/ferromagnet spin-orbit-coupled interfaces: A first-principles Floquet-nonequilibrium-Green-function approach|Kapildeb Dolui,Utkarsh Bajpai,Branislav K. Nikolic###
(1632611, 1632611)
 Weintroduce an approach where first-principles Hamiltonian of these interfaces,obtained from noncollinear density functional theory (ncDFT) calculations, iscombined with charge conserving Floquet-nonequilibrium-Green-function formalismto compute em directly the pumped spin current ISz<missing VAR> into semi-infiniteleft lead of two-terminal heterostructures Cu/X<missing VAR>/Co/Cu or Y/Co/Cu---whereX<missing VAR>Bi2Se3 and YPt or W---due to microwave-driven steadily precessingmagnetization of the Co layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co/Cu
###Effective spin-mixing conductance of topological-insulator/ferromagnet and heavy-metal/ferromagnet spin-orbit-coupled interfaces: A first-principles Floquet-nonequilibrium-Green-function approach|Kapildeb Dolui,Utkarsh Bajpai,Branislav K. Nikolic###
(1632615, 1632617)
 Weintroduce an approach where first-principles Hamiltonian of these interfaces,obtained from noncollinear density functional theory (ncDFT) calculations, iscombined with charge conserving Floquet-nonequilibrium-Green-function formalismto compute em directly the pumped spin current ISz<missing VAR> into semi-infiniteleft lead of two-terminal heterostructures Cu/X<missing VAR>/Co/Cu or Y/Co/Cu---whereX<missing VAR>Bi2Se3 and YPt or W---due to microwave-driven steadily precessingmagnetization of the Co layer.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Y/Co/Cu
###Effective spin-mixing conductance of topological-insulator/ferromagnet and heavy-metal/ferromagnet spin-orbit-coupled interfaces: A first-principles Floquet-nonequilibrium-Green-function approach|Kapildeb Dolui,Utkarsh Bajpai,Branislav K. Nikolic###
(1632621, 1632625)
 Weintroduce an approach where first-principles Hamiltonian of these interfaces,obtained from noncollinear density functional theory (ncDFT) calculations, iscombined with charge conserving Floquet-nonequilibrium-Green-function formalismto compute em directly the pumped spin current ISz<missing VAR> into semi-infiniteleft lead of two-terminal heterostructures Cu/X<missing VAR>/Co/Cu or Y/Co/Cu---whereX<missing VAR>Bi2Se3 and YPt or W---due to microwave-driven steadily precessingmagnetization of the Co layer.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Bi2Se3
###Effective spin-mixing conductance of topological-insulator/ferromagnet and heavy-metal/ferromagnet spin-orbit-coupled interfaces: A first-principles Floquet-nonequilibrium-Green-function approach|Kapildeb Dolui,Utkarsh Bajpai,Branislav K. Nikolic###
(1632633, 1632636)
 Weintroduce an approach where first-principles Hamiltonian of these interfaces,obtained from noncollinear density functional theory (ncDFT) calculations, iscombined with charge conserving Floquet-nonequilibrium-Green-function formalismto compute em directly the pumped spin current ISz<missing VAR> into semi-infiniteleft lead of two-terminal heterostructures Cu/X<missing VAR>/Co/Cu or Y/Co/Cu---whereX<missing VAR>Bi2Se3 and YPt or W---due to microwave-driven steadily precessingmagnetization of the Co layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YPt
###Effective spin-mixing conductance of topological-insulator/ferromagnet and heavy-metal/ferromagnet spin-orbit-coupled interfaces: A first-principles Floquet-nonequilibrium-Green-function approach|Kapildeb Dolui,Utkarsh Bajpai,Branislav K. Nikolic###
(1632640, 1632641)
 Weintroduce an approach where first-principles Hamiltonian of these interfaces,obtained from noncollinear density functional theory (ncDFT) calculations, iscombined with charge conserving Floquet-nonequilibrium-Green-function formalismto compute em directly the pumped spin current ISz<missing VAR> into semi-infiniteleft lead of two-terminal heterostructures Cu/X<missing VAR>/Co/Cu or Y/Co/Cu---whereX<missing VAR>Bi2Se3 and YPt or W---due to microwave-driven steadily precessingmagnetization of the Co layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Effective spin-mixing conductance of topological-insulator/ferromagnet and heavy-metal/ferromagnet spin-orbit-coupled interfaces: A first-principles Floquet-nonequilibrium-Green-function approach|Kapildeb Dolui,Utkarsh Bajpai,Branislav K. Nikolic###
(1632645, 1632645)
 Weintroduce an approach where first-principles Hamiltonian of these interfaces,obtained from noncollinear density functional theory (ncDFT) calculations, iscombined with charge conserving Floquet-nonequilibrium-Green-function formalismto compute em directly the pumped spin current ISz<missing VAR> into semi-infiniteleft lead of two-terminal heterostructures Cu/X<missing VAR>/Co/Cu or Y/Co/Cu---whereX<missing VAR>Bi2Se3 and YPt or W---due to microwave-driven steadily precessingmagnetization of the Co layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Effective spin-mixing conductance of topological-insulator/ferromagnet and heavy-metal/ferromagnet spin-orbit-coupled interfaces: A first-principles Floquet-nonequilibrium-Green-function approach|Kapildeb Dolui,Utkarsh Bajpai,Branislav K. Nikolic###
(1632668, 1632668)
 Weintroduce an approach where first-principles Hamiltonian of these interfaces,obtained from noncollinear density functional theory (ncDFT) calculations, iscombined with charge conserving Floquet-nonequilibrium-Green-function formalismto compute em directly the pumped spin current ISz<missing VAR> into semi-infiniteleft lead of two-terminal heterostructures Cu/X<missing VAR>/Co/Cu or Y/Co/Cu---whereX<missing VAR>Bi2Se3 and YPt or W---due to microwave-driven steadily precessingmagnetization of the Co layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Effective spin-mixing conductance of topological-insulator/ferromagnet and heavy-metal/ferromagnet spin-orbit-coupled interfaces: A first-principles Floquet-nonequilibrium-Green-function approach|Kapildeb Dolui,Utkarsh Bajpai,Branislav K. Nikolic###
(1632685, 1632685)
 This allows us extract an effective SM<missing VAR>C as aprefactor in ISz<missing VAR> vs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Effective spin-mixing conductance of topological-insulator/ferromagnet and heavy-metal/ferromagnet spin-orbit-coupled interfaces: A first-principles Floquet-nonequilibrium-Green-function approach|Kapildeb Dolui,Utkarsh Bajpai,Branislav K. Nikolic###
(1632687, 1632687)
 This allows us extract an effective SM<missing VAR>C as aprefactor in ISz<missing VAR> vs.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

IS
###Effective spin-mixing conductance of topological-insulator/ferromagnet and heavy-metal/ferromagnet spin-orbit-coupled interfaces: A first-principles Floquet-nonequilibrium-Green-function approach|Kapildeb Dolui,Utkarsh Bajpai,Branislav K. Nikolic###
(1632698, 1632699)
 This allows us extract an effective SM<missing VAR>C as aprefactor in ISz<missing VAR> vs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

IS
###Effective spin-mixing conductance of topological-insulator/ferromagnet and heavy-metal/ferromagnet spin-orbit-coupled interfaces: A first-principles Floquet-nonequilibrium-Green-function approach|Kapildeb Dolui,Utkarsh Bajpai,Branislav K. Nikolic###
(1632732, 1632733)
 precession cone angle theta dependence, as longas it remains the same, ISz<missing VAR> propto sin2 theta, as in the case whereSOC is absent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SOC
###Effective spin-mixing conductance of topological-insulator/ferromagnet and heavy-metal/ferromagnet spin-orbit-coupled interfaces: A first-principles Floquet-nonequilibrium-Green-function approach|Kapildeb Dolui,Utkarsh Bajpai,Branislav K. Nikolic###
(1632755, 1632757)
 precession cone angle theta dependence, as longas it remains the same, ISz<missing VAR> propto sin2 theta, as in the case whereSOC is absent.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SOC
###Effective spin-mixing conductance of topological-insulator/ferromagnet and heavy-metal/ferromagnet spin-orbit-coupled interfaces: A first-principles Floquet-nonequilibrium-Green-function approach|Kapildeb Dolui,Utkarsh Bajpai,Branislav K. Nikolic###
(1632772, 1632774)
 By comparing calculations where SOC in switched off vs.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SOC
###Effective spin-mixing conductance of topological-insulator/ferromagnet and heavy-metal/ferromagnet spin-orbit-coupled interfaces: A first-principles Floquet-nonequilibrium-Green-function approach|Kapildeb Dolui,Utkarsh Bajpai,Branislav K. Nikolic###
(1632806, 1632808)
 switchedon in ncDFT calculations, we find that SOC consistently reduces the pumped spincurrent and, therefore, the effective SM<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Effective spin-mixing conductance of topological-insulator/ferromagnet and heavy-metal/ferromagnet spin-orbit-coupled interfaces: A first-principles Floquet-nonequilibrium-Green-function approach|Kapildeb Dolui,Utkarsh Bajpai,Branislav K. Nikolic###
(1632833, 1632833)
 switchedon in ncDFT calculations, we find that SOC consistently reduces the pumped spincurrent and, therefore, the effective SM<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Effective spin-mixing conductance of topological-insulator/ferromagnet and heavy-metal/ferromagnet spin-orbit-coupled interfaces: A first-principles Floquet-nonequilibrium-Green-function approach|Kapildeb Dolui,Utkarsh Bajpai,Branislav K. Nikolic###
(1632835, 1632835)
 switchedon in ncDFT calculations, we find that SOC consistently reduces the pumped spincurrent and, therefore, the effective SM<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Nonsaturating magnetoresistance and nontrivial band topology of type-II Weyl semimetal NbIrTe4|W. Zhou,B. Li,C. Q. Xu,M. R. van Delft,Y. G. Chen,X. C. Fan,B. Qian,N. E. Hussey,Xiaofeng Xu###
(1632862, 1632863)
Nonsaturating magnetoresistance and nontrivial band topology of type-II Weyl semimetal NbIrTe4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 35, 'T', 2],[144.0, 0.4, 'K', 2],[214.0, 80, 'K', 4],[364.0, 16, 'Weyl', 6],[376.0, 0, ',', 6]

NbIrTe4
###Nonsaturating magnetoresistance and nontrivial band topology of type-II Weyl semimetal NbIrTe4|W. Zhou,B. Li,C. Q. Xu,M. R. van Delft,Y. G. Chen,X. C. Fan,B. Qian,N. E. Hussey,Xiaofeng Xu###
(1632869, 1632872)
Nonsaturating magnetoresistance and nontrivial band topology of type-II Weyl semimetal NbIrTe4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 35, 'T', 2],[135.0, 0.4, 'K', 2],[205.0, 80, 'K', 4],[355.0, 16, 'Weyl', 6],[367.0, 0, ',', 6]

In
###Nonsaturating magnetoresistance and nontrivial band topology of type-II Weyl semimetal NbIrTe4|W. Zhou,B. Li,C. Q. Xu,M. R. van Delft,Y. G. Chen,X. C. Fan,B. Qian,N. E. Hussey,Xiaofeng Xu###
(1632944, 1632944)
 In thisreport, the thermodynamic and transport properties of a theoretically predictedWeyl semimetal NbIrTe4 is measured in high magnetic fields up to 35 T and lowtemperatures down to 0.4 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 35, 'T', 0],[63.0, 0.4, 'K', 0],[133.0, 80, 'K', 2],[283.0, 16, 'Weyl', 4],[295.0, 0, ',', 4]

NbIrTe4
###Nonsaturating magnetoresistance and nontrivial band topology of type-II Weyl semimetal NbIrTe4|W. Zhou,B. Li,C. Q. Xu,M. R. van Delft,Y. G. Chen,X. C. Fan,B. Qian,N. E. Hussey,Xiaofeng Xu###
(1632975, 1632978)
 In thisreport, the thermodynamic and transport properties of a theoretically predictedWeyl semimetal NbIrTe4 is measured in high magnetic fields up to 35 T and lowtemperatures down to 0.4 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 35, 'T', 0],[29.0, 0.4, 'K', 0],[99.0, 80, 'K', 2],[249.0, 16, 'Weyl', 4],[261.0, 0, ',', 4]

NbIrTe4
###Nonsaturating magnetoresistance and nontrivial band topology of type-II Weyl semimetal NbIrTe4|W. Zhou,B. Li,C. Q. Xu,M. R. van Delft,Y. G. Chen,X. C. Fan,B. Qian,N. E. Hussey,Xiaofeng Xu###
(1633013, 1633016)
 Remarkably, NbIrTe4 exhibits a nonsaturatingtransverse magnetoresistance which follows a power-law dependence in B.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 35, 'T', 1],[6.0, 0.4, 'K', 1],[61.0, 80, 'K', 1],[211.0, 16, 'Weyl', 3],[223.0, 0, ',', 3]

B
###Nonsaturating magnetoresistance and nontrivial band topology of type-II Weyl semimetal NbIrTe4|W. Zhou,B. Li,C. Q. Xu,M. R. van Delft,Y. G. Chen,X. C. Fan,B. Qian,N. E. Hussey,Xiaofeng Xu###
(1633043, 1633043)
 Remarkably, NbIrTe4 exhibits a nonsaturatingtransverse magnetoresistance which follows a power-law dependence in B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 35, 'T', 1],[36.0, 0.4, 'K', 1],[34.0, 80, 'K', 1],[184.0, 16, 'Weyl', 3],[196.0, 0, ',', 3]

B
###Nonsaturating magnetoresistance and nontrivial band topology of type-II Weyl semimetal NbIrTe4|W. Zhou,B. Li,C. Q. Xu,M. R. van Delft,Y. G. Chen,X. C. Fan,B. Qian,N. E. Hussey,Xiaofeng Xu###
(1633173, 1633173)
 The Shubnikov-de Haas oscillations of the Hallresistivity under high B give the light effective masses of charge carriers andthe nontrivial Berry phase associated with Weyl fermions.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 35, 'T', 3],[166.0, 0.4, 'K', 3],[96.0, 80, 'K', 1],[54.0, 16, 'Weyl', 1],[66.0, 0, ',', 1]

UTe2
###Magnetic-Field-Induced Phenomena in the Paramagnetic Superconductor UTe$_{2}$|William Knafo,Michal Vališka,Daniel Braithwaite,Gérard Lapertot,Georg Knebel,Alexandre Pourret,Jean-Pascal Brison,Jacques Flouquet,Dai Aoki###
(1633285, 1633287)
Magnetic-Field-Induced Phenomena in the Paramagnetic Superconductor UTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[53.0, 1.4, 'to', 1]

UTe2
###Magnetic-Field-Induced Phenomena in the Paramagnetic Superconductor UTe$_{2}$|William Knafo,Michal Vališka,Daniel Braithwaite,Gérard Lapertot,Georg Knebel,Alexandre Pourret,Jean-Pascal Brison,Jacques Flouquet,Dai Aoki###
(1633309, 1633311)
 We present magnetoresistivity measurements on the heavy-fermionsuperconductor UTe2 in pulsed magnetic fields mu0H up to 68T<missing VAR> andtemperatures T<missing VAR> from 1.4 to 80K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[29.0, 1.4, 'to', 0]

H
###Magnetic-Field-Induced Phenomena in the Paramagnetic Superconductor UTe$_{2}$|William Knafo,Michal Vališka,Daniel Braithwaite,Gérard Lapertot,Georg Knebel,Alexandre Pourret,Jean-Pascal Brison,Jacques Flouquet,Dai Aoki###
(1633323, 1633323)
 We present magnetoresistivity measurements on the heavy-fermionsuperconductor UTe2 in pulsed magnetic fields mu0H up to 68T<missing VAR> andtemperatures T<missing VAR> from 1.4 to 80K.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 1.4, 'to', 0]

K
###Magnetic-Field-Induced Phenomena in the Paramagnetic Superconductor UTe$_{2}$|William Knafo,Michal Vališka,Daniel Braithwaite,Gérard Lapertot,Georg Knebel,Alexandre Pourret,Jean-Pascal Brison,Jacques Flouquet,Dai Aoki###
(1633343, 1633343)
 We present magnetoresistivity measurements on the heavy-fermionsuperconductor UTe2 in pulsed magnetic fields mu0H up to 68T<missing VAR> andtemperatures T<missing VAR> from 1.4 to 80K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 1.4, 'to', 0]

H
###Magnetic-Field-Induced Phenomena in the Paramagnetic Superconductor UTe$_{2}$|William Knafo,Michal Vališka,Daniel Braithwaite,Gérard Lapertot,Georg Knebel,Alexandre Pourret,Jean-Pascal Brison,Jacques Flouquet,Dai Aoki###
(1633444, 1633444)
 For mathbfHparallelmathbfa, a broad anomaly inthe resistivity is observed at mu0Hsimeq10T<missing VAR> and T<missing VAR>  1.4K.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 1.4, 'to', 2]

H
###Magnetic-Field-Induced Phenomena in the Paramagnetic Superconductor UTe$_{2}$|William Knafo,Michal Vališka,Daniel Braithwaite,Gérard Lapertot,Georg Knebel,Alexandre Pourret,Jean-Pascal Brison,Jacques Flouquet,Dai Aoki###
(1633471, 1633471)
 For mathbfHparallelmathbfa, a broad anomaly inthe resistivity is observed at mu0Hsimeq10T<missing VAR> and T<missing VAR>  1.4K.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 1.4, 'to', 2]

K
###Magnetic-Field-Induced Phenomena in the Paramagnetic Superconductor UTe$_{2}$|William Knafo,Michal Vališka,Daniel Braithwaite,Gérard Lapertot,Georg Knebel,Alexandre Pourret,Jean-Pascal Brison,Jacques Flouquet,Dai Aoki###
(1633482, 1633482)
 For mathbfHparallelmathbfa, a broad anomaly inthe resistivity is observed at mu0Hsimeq10T<missing VAR> and T<missing VAR>  1.4K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 1.4, 'to', 2]

H
###Magnetic-Field-Induced Phenomena in the Paramagnetic Superconductor UTe$_{2}$|William Knafo,Michal Vališka,Daniel Braithwaite,Gérard Lapertot,Georg Knebel,Alexandre Pourret,Jean-Pascal Brison,Jacques Flouquet,Dai Aoki###
(1633489, 1633489)
 FormathbfHparallelmathbfc<missing VAR>, no magnetic transition nor crossover areobserved.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 1.4, 'to', 3]

H
###Magnetic-Field-Induced Phenomena in the Paramagnetic Superconductor UTe$_{2}$|William Knafo,Michal Vališka,Daniel Braithwaite,Gérard Lapertot,Georg Knebel,Alexandre Pourret,Jean-Pascal Brison,Jacques Flouquet,Dai Aoki###
(1633514, 1633514)
 For mathbfHparallelmathbfb<missing VAR>, a sharp first-order-like step inthe resistivity indicates a metamagnetic transition at the field mu0Hm<missing VAR>simeq 35T<missing VAR>.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[174.0, 1.4, 'to', 4]

H
###Magnetic-Field-Induced Phenomena in the Paramagnetic Superconductor UTe$_{2}$|William Knafo,Michal Vališka,Daniel Braithwaite,Gérard Lapertot,Georg Knebel,Alexandre Pourret,Jean-Pascal Brison,Jacques Flouquet,Dai Aoki###
(1633555, 1633555)
 For mathbfHparallelmathbfb<missing VAR>, a sharp first-order-like step inthe resistivity indicates a metamagnetic transition at the field mu0Hm<missing VAR>simeq 35T<missing VAR>.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[215.0, 1.4, 'to', 4]

P
###Magnetic-Field-Induced Phenomena in the Paramagnetic Superconductor UTe$_{2}$|William Knafo,Michal Vališka,Daniel Braithwaite,Gérard Lapertot,Georg Knebel,Alexandre Pourret,Jean-Pascal Brison,Jacques Flouquet,Dai Aoki###
(1633605, 1633605)
 When the temperature is raised signature of first-ordermetamagnetism is observed up to a critical endpoint at TCEPsimeq7K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[265.0, 1.4, 'to', 5]

K
###Magnetic-Field-Induced Phenomena in the Paramagnetic Superconductor UTe$_{2}$|William Knafo,Michal Vališka,Daniel Braithwaite,Gérard Lapertot,Georg Knebel,Alexandre Pourret,Jean-Pascal Brison,Jacques Flouquet,Dai Aoki###
(1633608, 1633608)
 When the temperature is raised signature of first-ordermetamagnetism is observed up to a critical endpoint at TCEPsimeq7K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[268.0, 1.4, 'to', 5]

At
###Magnetic-Field-Induced Phenomena in the Paramagnetic Superconductor UTe$_{2}$|William Knafo,Michal Vališka,Daniel Braithwaite,Gérard Lapertot,Georg Knebel,Alexandre Pourret,Jean-Pascal Brison,Jacques Flouquet,Dai Aoki###
(1633611, 1633611)
 Athigher temperatures a crossover persists up to 28K, i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[271.0, 1.4, 'to', 6]

K
###Magnetic-Field-Induced Phenomena in the Paramagnetic Superconductor UTe$_{2}$|William Knafo,Michal Vališka,Daniel Braithwaite,Gérard Lapertot,Georg Knebel,Alexandre Pourret,Jean-Pascal Brison,Jacques Flouquet,Dai Aoki###
(1633629, 1633629)
 Athigher temperatures a crossover persists up to 28K, i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[289.0, 1.4, 'to', 6]

K
###Magnetic-Field-Induced Phenomena in the Paramagnetic Superconductor UTe$_{2}$|William Knafo,Michal Vališka,Daniel Braithwaite,Gérard Lapertot,Georg Knebel,Alexandre Pourret,Jean-Pascal Brison,Jacques Flouquet,Dai Aoki###
(1633651, 1633651)
, below thetemperature T<missing VAR>chimax  35K where the magnetic susceptibility is maximal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[311.0, 1.4, 'to', 7]

H
###Magnetic-Field-Induced Phenomena in the Paramagnetic Superconductor UTe$_{2}$|William Knafo,Michal Vališka,Daniel Braithwaite,Gérard Lapertot,Georg Knebel,Alexandre Pourret,Jean-Pascal Brison,Jacques Flouquet,Dai Aoki###
(1633704, 1633704)
A sharp maximum in the Fermi-liquid quadratic coefficient A of thelow-temperature resistivity is found at Hm<missing VAR>.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[364.0, 1.4, 'to', 8]

URhGe
###Magnetic-Field-Induced Phenomena in the Paramagnetic Superconductor UTe$_{2}$|William Knafo,Michal Vališka,Daniel Braithwaite,Gérard Lapertot,Georg Knebel,Alexandre Pourret,Jean-Pascal Brison,Jacques Flouquet,Dai Aoki###
(1633754, 1633756)
 Similarly to the URhGe case, we show thatUTe2 is a candidate for field-induced reentrant superconductivity in theproximity of Hm<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[414.0, 1.4, 'to', 10]

UTe2
###Magnetic-Field-Induced Phenomena in the Paramagnetic Superconductor UTe$_{2}$|William Knafo,Michal Vališka,Daniel Braithwaite,Gérard Lapertot,Georg Knebel,Alexandre Pourret,Jean-Pascal Brison,Jacques Flouquet,Dai Aoki###
(1633768, 1633770)
 Similarly to the URhGe case, we show thatUTe2 is a candidate for field-induced reentrant superconductivity in theproximity of Hm<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[428.0, 1.4, 'to', 10]

H
###Magnetic-Field-Induced Phenomena in the Paramagnetic Superconductor UTe$_{2}$|William Knafo,Michal Vališka,Daniel Braithwaite,Gérard Lapertot,Georg Knebel,Alexandre Pourret,Jean-Pascal Brison,Jacques Flouquet,Dai Aoki###
(1633797, 1633797)
 Similarly to the URhGe case, we show thatUTe2 is a candidate for field-induced reentrant superconductivity in theproximity of Hm<missing VAR>.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[457.0, 1.4, 'to', 10]

B2
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(1633819, 1633820)
Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[211.0, 3, ',', 5],[257.0, 300, 'K', 5],[260.0, 10, 'K', 5],[264.0, 87, '%', 5],[270.0, 165, '%', 5]

CoFeCrAl
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(1633824, 1633827)
Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[204.0, 3, ',', 5],[250.0, 300, 'K', 5],[253.0, 10, 'K', 5],[257.0, 87, '%', 5],[263.0, 165, '%', 5]

CoFeCrAl
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(1633846, 1633849)
 The equiatomic quaternary Heusler alloy CoFeCrAl is a candidate material forspin-gapless semiconductors (SG<missing VAR>Ss).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[182.0, 3, ',', 4],[228.0, 300, 'K', 4],[231.0, 10, 'K', 4],[235.0, 87, '%', 4],[241.0, 165, '%', 4]

S
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(1633869, 1633869)
 The equiatomic quaternary Heusler alloy CoFeCrAl is a candidate material forspin-gapless semiconductors (SG<missing VAR>Ss).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 3, ',', 4],[208.0, 300, 'K', 4],[211.0, 10, 'K', 4],[215.0, 87, '%', 4],[221.0, 165, '%', 4]

MgO
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(1633926, 1633927)
 This paper reports afully epitaxial (001)-oriented MgO barrier magnetic tunnel junction (MTJ) withCoFeCrAl electrodes grown on a Cr buffer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 3, ',', 2],[150.0, 300, 'K', 2],[153.0, 10, 'K', 2],[157.0, 87, '%', 2],[163.0, 165, '%', 2]

CoFeCrAl
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(1633946, 1633949)
 This paper reports afully epitaxial (001)-oriented MgO barrier magnetic tunnel junction (MTJ) withCoFeCrAl electrodes grown on a Cr buffer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 3, ',', 2],[128.0, 300, 'K', 2],[131.0, 10, 'K', 2],[135.0, 87, '%', 2],[141.0, 165, '%', 2]

Cr
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(1633959, 1633959)
 This paper reports afully epitaxial (001)-oriented MgO barrier magnetic tunnel junction (MTJ) withCoFeCrAl electrodes grown on a Cr buffer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 3, ',', 2],[118.0, 300, 'K', 2],[121.0, 10, 'K', 2],[125.0, 87, '%', 2],[131.0, 165, '%', 2]

CoFeCrAl
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(1633987, 1633990)
 X<missing VAR>-ray and electron diffractionmeasurements show that the (001) CoFeCrAl electrode films with atomically flatsurfaces have a B2-ordered phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 3, ',', 1],[87.0, 300, 'K', 1],[90.0, 10, 'K', 1],[94.0, 87, '%', 1],[100.0, 165, '%', 1]

B2
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(1634009, 1634010)
 X<missing VAR>-ray and electron diffractionmeasurements show that the (001) CoFeCrAl electrode films with atomically flatsurfaces have a B2-ordered phase.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 3, ',', 1],[67.0, 300, 'K', 1],[70.0, 10, 'K', 1],[74.0, 87, '%', 1],[80.0, 165, '%', 1]

MgO
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(1634120, 1634121)
 Cross-sectional electron diffraction analysis showsthat the MTJs have MgO interfaces with fewer dislocations.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 3, ',', 1],[43.0, 300, 'K', 1],[40.0, 10, 'K', 1],[36.0, 87, '%', 1],[30.0, 165, '%', 1]

C
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(1634194, 1634194)
X<missing VAR>-ray magnetic circular dichroism (XMCD) measurements show a ferromagneticarrangement of the Co and Fe magnetic moments of B2-ordered CoFeCrAl, incontrast to the ferrimagnetic arrangement predicted for the Y-ordered statepossessing SG<missing VAR>S characteristics.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 3, ',', 3],[117.0, 300, 'K', 3],[114.0, 10, 'K', 3],[110.0, 87, '%', 3],[104.0, 165, '%', 3]

Co
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(1634213, 1634213)
X<missing VAR>-ray magnetic circular dichroism (XMCD) measurements show a ferromagneticarrangement of the Co and Fe magnetic moments of B2-ordered CoFeCrAl, incontrast to the ferrimagnetic arrangement predicted for the Y-ordered statepossessing SG<missing VAR>S characteristics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[182.0, 3, ',', 3],[136.0, 300, 'K', 3],[133.0, 10, 'K', 3],[129.0, 87, '%', 3],[123.0, 165, '%', 3]

Fe
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(1634217, 1634217)
X<missing VAR>-ray magnetic circular dichroism (XMCD) measurements show a ferromagneticarrangement of the Co and Fe magnetic moments of B2-ordered CoFeCrAl, incontrast to the ferrimagnetic arrangement predicted for the Y-ordered statepossessing SG<missing VAR>S characteristics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, 3, ',', 3],[140.0, 300, 'K', 3],[137.0, 10, 'K', 3],[133.0, 87, '%', 3],[127.0, 165, '%', 3]

B2
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(1634225, 1634226)
X<missing VAR>-ray magnetic circular dichroism (XMCD) measurements show a ferromagneticarrangement of the Co and Fe magnetic moments of B2-ordered CoFeCrAl, incontrast to the ferrimagnetic arrangement predicted for the Y-ordered statepossessing SG<missing VAR>S characteristics.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[194.0, 3, ',', 3],[148.0, 300, 'K', 3],[145.0, 10, 'K', 3],[141.0, 87, '%', 3],[135.0, 165, '%', 3]

CoFeCrAl
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(1634230, 1634233)
X<missing VAR>-ray magnetic circular dichroism (XMCD) measurements show a ferromagneticarrangement of the Co and Fe magnetic moments of B2-ordered CoFeCrAl, incontrast to the ferrimagnetic arrangement predicted for the Y-ordered statepossessing SG<missing VAR>S characteristics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[199.0, 3, ',', 3],[153.0, 300, 'K', 3],[150.0, 10, 'K', 3],[146.0, 87, '%', 3],[140.0, 165, '%', 3]

Y
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(1634255, 1634255)
X<missing VAR>-ray magnetic circular dichroism (XMCD) measurements show a ferromagneticarrangement of the Co and Fe magnetic moments of B2-ordered CoFeCrAl, incontrast to the ferrimagnetic arrangement predicted for the Y-ordered statepossessing SG<missing VAR>S characteristics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[224.0, 3, ',', 3],[178.0, 300, 'K', 3],[175.0, 10, 'K', 3],[171.0, 87, '%', 3],[165.0, 165, '%', 3]

S
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(1634264, 1634264)
X<missing VAR>-ray magnetic circular dichroism (XMCD) measurements show a ferromagneticarrangement of the Co and Fe magnetic moments of B2-ordered CoFeCrAl, incontrast to the ferrimagnetic arrangement predicted for the Y-ordered statepossessing SG<missing VAR>S characteristics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[233.0, 3, ',', 3],[187.0, 300, 'K', 3],[184.0, 10, 'K', 3],[180.0, 87, '%', 3],[174.0, 165, '%', 3]

S
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(1634266, 1634266)
X<missing VAR>-ray magnetic circular dichroism (XMCD) measurements show a ferromagneticarrangement of the Co and Fe magnetic moments of B2-ordered CoFeCrAl, incontrast to the ferrimagnetic arrangement predicted for the Y-ordered statepossessing SG<missing VAR>S characteristics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[235.0, 3, ',', 3],[189.0, 300, 'K', 3],[186.0, 10, 'K', 3],[182.0, 87, '%', 3],[176.0, 165, '%', 3]

Cr
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(1634286, 1634286)
 Ab-initio calculations taking account of theCr-Fe swap disorder qualitatively explain the XMCD<missing VAR> results.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[255.0, 3, ',', 4],[209.0, 300, 'K', 4],[206.0, 10, 'K', 4],[202.0, 87, '%', 4],[196.0, 165, '%', 4]

Fe
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(1634288, 1634288)
 Ab-initio calculations taking account of theCr-Fe swap disorder qualitatively explain the XMCD<missing VAR> results.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[257.0, 3, ',', 4],[211.0, 300, 'K', 4],[208.0, 10, 'K', 4],[204.0, 87, '%', 4],[198.0, 165, '%', 4]

C
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(1634302, 1634302)
 Ab-initio calculations taking account of theCr-Fe swap disorder qualitatively explain the XMCD<missing VAR> results.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[271.0, 3, ',', 4],[225.0, 300, 'K', 4],[222.0, 10, 'K', 4],[218.0, 87, '%', 4],[212.0, 165, '%', 4]

Cr
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(1634320, 1634320)
 Finally, the effectof the Cr-Fe swap disorder on the ability for electronic states to allowcoherent electron tunneling is discussed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[289.0, 3, ',', 5],[243.0, 300, 'K', 5],[240.0, 10, 'K', 5],[236.0, 87, '%', 5],[230.0, 165, '%', 5]

Fe
###Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy|Tomoki Tsuchiya,Tufan Roy,Kelvin Elphick,Jun Okabayashi,Lakhan Bainsla,Tomohiro Ichinose,Kazuya Suzuki,Masahito Tsujikawa,Masafumi Shirai,Atsufumi Hirohata,Shigemi Mizukami###
(1634322, 1634322)
 Finally, the effectof the Cr-Fe swap disorder on the ability for electronic states to allowcoherent electron tunneling is discussed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[291.0, 3, ',', 5],[245.0, 300, 'K', 5],[242.0, 10, 'K', 5],[238.0, 87, '%', 5],[232.0, 165, '%', 5]

TaP2
###Quantum oscillations and nontrivial topological state in a compensated semimetal TaP2|Hongyuan Wang,Hao Su,Jiuyang Zhang,Wei Xia,Yishi Lin,Xiaolei Liu,Xiaofei Hou,Zhenhai Yu,Na Yu,Xia Wang,Zhiqiang Zou,Yihua Wang,Qifeng Liang,Yuhua Zhen,Yanfeng Guo###
(1634384, 1634386)
Quantum oscillations and nontrivial topological state in a compensated semimetal TaP2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 700, '%', 2],[86.0, 9, 'T', 2],[89.0, 2, 'K', 2],[164.0, 72, 'T', 4],[166.0, 237, 'T', 4],[170.0, 356, 'T', 4],[370.0, 0, ';', 7]

TaP2
###Quantum oscillations and nontrivial topological state in a compensated semimetal TaP2|Hongyuan Wang,Hao Su,Jiuyang Zhang,Wei Xia,Yishi Lin,Xiaolei Liu,Xiaofei Hou,Zhenhai Yu,Na Yu,Xia Wang,Zhiqiang Zou,Yihua Wang,Qifeng Liang,Yuhua Zhen,Yanfeng Guo###
(1634416, 1634418)
 We report systematic magneto-transport measurements and ab initiocalculations on single-crystalline TaP2, a new member of the transition-metaldipnictides.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 700, '%', 1],[54.0, 9, 'T', 1],[57.0, 2, 'K', 1],[132.0, 72, 'T', 3],[134.0, 237, 'T', 3],[138.0, 356, 'T', 3],[338.0, 0, ';', 6]

(B)
###Quantum oscillations and nontrivial topological state in a compensated semimetal TaP2|Hongyuan Wang,Hao Su,Jiuyang Zhang,Wei Xia,Yishi Lin,Xiaolei Liu,Xiaofei Hou,Zhenhai Yu,Na Yu,Xia Wang,Zhiqiang Zou,Yihua Wang,Qifeng Liang,Yuhua Zhen,Yanfeng Guo###
(1634467, 1634469)
 We observed unsaturated magnetoresistance (MR) reaching  700% ata magnetic field (B) of 9 T at 2 K along with striking Shubnikov-de Hass (SdH)oscillations.
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 700, '%', 0],[3.0, 9, 'T', 0],[6.0, 2, 'K', 0],[81.0, 72, 'T', 2],[83.0, 237, 'T', 2],[87.0, 356, 'T', 2],[287.0, 0, ';', 5]

H
###Quantum oscillations and nontrivial topological state in a compensated semimetal TaP2|Hongyuan Wang,Hao Su,Jiuyang Zhang,Wei Xia,Yishi Lin,Xiaolei Liu,Xiaofei Hou,Zhenhai Yu,Na Yu,Xia Wang,Zhiqiang Zou,Yihua Wang,Qifeng Liang,Yuhua Zhen,Yanfeng Guo###
(1634491, 1634491)
 We observed unsaturated magnetoresistance (MR) reaching  700% ata magnetic field (B) of 9 T at 2 K along with striking Shubnikov-de Hass (SdH)oscillations.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 700, '%', 0],[19.0, 9, 'T', 0],[16.0, 2, 'K', 0],[59.0, 72, 'T', 2],[61.0, 237, 'T', 2],[65.0, 356, 'T', 2],[265.0, 0, ';', 5]

H
###Quantum oscillations and nontrivial topological state in a compensated semimetal TaP2|Hongyuan Wang,Hao Su,Jiuyang Zhang,Wei Xia,Yishi Lin,Xiaolei Liu,Xiaofei Hou,Zhenhai Yu,Na Yu,Xia Wang,Zhiqiang Zou,Yihua Wang,Qifeng Liang,Yuhua Zhen,Yanfeng Guo###
(1634507, 1634507)
 Our analysis on the SdH oscillations reveals nonzero Berry phase,indicating nontrivial band topology.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 700, '%', 1],[35.0, 9, 'T', 1],[32.0, 2, 'K', 1],[43.0, 72, 'T', 1],[45.0, 237, 'T', 1],[49.0, 356, 'T', 1],[249.0, 0, ';', 4]

B
###Quantum oscillations and nontrivial topological state in a compensated semimetal TaP2|Hongyuan Wang,Hao Su,Jiuyang Zhang,Wei Xia,Yishi Lin,Xiaolei Liu,Xiaofei Hou,Zhenhai Yu,Na Yu,Xia Wang,Zhiqiang Zou,Yihua Wang,Qifeng Liang,Yuhua Zhen,Yanfeng Guo###
(1634660, 1634660)
 We also found negative longitudinal MR (n-MR) within anarrow window of the angles between B and the electric current (I).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, 700, '%', 3],[188.0, 9, 'T', 3],[185.0, 2, 'K', 3],[110.0, 72, 'T', 1],[108.0, 237, 'T', 1],[104.0, 356, 'T', 1],[96.0, 0, ';', 2]

(I)
###Quantum oscillations and nontrivial topological state in a compensated semimetal TaP2|Hongyuan Wang,Hao Su,Jiuyang Zhang,Wei Xia,Yishi Lin,Xiaolei Liu,Xiaofei Hou,Zhenhai Yu,Na Yu,Xia Wang,Zhiqiang Zou,Yihua Wang,Qifeng Liang,Yuhua Zhen,Yanfeng Guo###
(1634670, 1634672)
 We also found negative longitudinal MR (n-MR) within anarrow window of the angles between B and the electric current (I).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[215.0, 700, '%', 3],[198.0, 9, 'T', 3],[195.0, 2, 'K', 3],[120.0, 72, 'T', 1],[118.0, 237, 'T', 1],[114.0, 356, 'T', 1],[84.0, 0, ';', 2]

TaP2
###Quantum oscillations and nontrivial topological state in a compensated semimetal TaP2|Hongyuan Wang,Hao Su,Jiuyang Zhang,Wei Xia,Yishi Lin,Xiaolei Liu,Xiaofei Hou,Zhenhai Yu,Na Yu,Xia Wang,Zhiqiang Zou,Yihua Wang,Qifeng Liang,Yuhua Zhen,Yanfeng Guo###
(1634729, 1634731)
 The ab inito calculations suggest TaP2 as a weaktopological insulator with the Z<missing VAR>2 indices of (0; 111), which exhibitstopological surface states on the (001) surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[274.0, 700, '%', 5],[257.0, 9, 'T', 5],[254.0, 2, 'K', 5],[179.0, 72, 'T', 3],[177.0, 237, 'T', 3],[173.0, 356, 'T', 3],[25.0, 0, ';', 0]

In
###Stochastic Computing for Hardware Implementation of Binarized Neural Networks|Tifenn Hirtzlin,Bogdan Penkovsky,Marc Bocquet,Jacques-Olivier Klein,Jean-Michel Portal,Damien Querlioz###
(1634921, 1634921)
 In this work, wepropose a stochastic computing version of Binarized Neural Networks, where theinput is also binarized.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[245.0, 62, '%', 4],[314.0, 2.1, 'can', 5],[330.0, 1.4, '%', 5]

NIS
###Stochastic Computing for Hardware Implementation of Binarized Neural Networks|Tifenn Hirtzlin,Bogdan Penkovsky,Marc Bocquet,Jacques-Olivier Klein,Jean-Michel Portal,Damien Querlioz###
(1634979, 1634981)
 Simulations on the example of the Fashion-M<missing VAR>NIST<missing VAR> andCIFAR<missing VAR>-10 datasets show that such networks can approach the performance ofconventional Binarized Neural Networks.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[185.0, 62, '%', 3],[254.0, 2.1, 'can', 4],[270.0, 1.4, '%', 4]

CIF
###Stochastic Computing for Hardware Implementation of Binarized Neural Networks|Tifenn Hirtzlin,Bogdan Penkovsky,Marc Bocquet,Jacques-Olivier Klein,Jean-Michel Portal,Damien Querlioz###
(1634987, 1634989)
 Simulations on the example of the Fashion-M<missing VAR>NIST<missing VAR> andCIFAR<missing VAR>-10 datasets show that such networks can approach the performance ofconventional Binarized Neural Networks.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[177.0, 62, '%', 3],[246.0, 2.1, 'can', 4],[262.0, 1.4, '%', 4]

SIC
###Stochastic Computing for Hardware Implementation of Binarized Neural Networks|Tifenn Hirtzlin,Bogdan Penkovsky,Marc Bocquet,Jacques-Olivier Klein,Jean-Michel Portal,Damien Querlioz###
(1635061, 1635063)
 Finally, the ASICimplementation of our scheme is investigated, in a system that closelyassociates logic and memory, implemented by Spin Torque Magnetoresistive RandomAccess Memory.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 62, '%', 1],[172.0, 2.1, 'can', 2],[188.0, 1.4, '%', 2]

NIS
###Stochastic Computing for Hardware Implementation of Binarized Neural Networks|Tifenn Hirtzlin,Bogdan Penkovsky,Marc Bocquet,Jacques-Olivier Klein,Jean-Michel Portal,Damien Querlioz###
(1635180, 1635182)
 This analysis shows that the stochastic computing approach canallow considerable savings with regards to conventional Binarized Neuralnetworks in terms of area (62% area reduction on the Fashion-M<missing VAR>NIST<missing VAR> task).
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 62, '%', 0],[53.0, 2.1, 'can', 1],[69.0, 1.4, '%', 1]

NIS
###Stochastic Computing for Hardware Implementation of Binarized Neural Networks|Tifenn Hirtzlin,Bogdan Penkovsky,Marc Bocquet,Jacques-Olivier Klein,Jean-Michel Portal,Damien Querlioz###
(1635259, 1635261)
 Itcan also allow important savings in terms of energy consumption, if we acceptreasonable reduction of accuracy for example a factor 2.1 can be saved, withthe cost of 1.4% in Fashion-M<missing VAR>NIST<missing VAR> test accuracy.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 62, '%', 1],[24.0, 2.1, 'can', 0],[8.0, 1.4, '%', 0]

Na3Bi
###Signatures of Helical Edge Transport in Millimetre-Scale Thin Films of Na3Bi|Chang Liu,Dimitrie Culcer,Mark T. Edmonds,Michael S. Fuhrer###
(1635351, 1635353)
Signatures of Helical Edge Transport in Millimetre-Scale Thin Films of Na3Bi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 2, 'DTIs', 2],[111.0, 2, 'DTI', 3],[159.0, 2, 'DTI', 4],[281.0, 80, '%', 6],[285.0, 0.9, 'T', 6],[297.0, 98, '%', 7],[322.0, 67, '%', 7],[400.0, 2, 'DTIs', 8]

I
###Signatures of Helical Edge Transport in Millimetre-Scale Thin Films of Na3Bi|Chang Liu,Dimitrie Culcer,Mark T. Edmonds,Michael S. Fuhrer###
(1635370, 1635370)
 A two-dimensional topological insulator (2DTI) has an insulating bulk andhelical spin-polarised edge modes robust to backscattering by non-magneticdisorder.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 2, 'DTIs', 1],[94.0, 2, 'DTI', 2],[142.0, 2, 'DTI', 3],[264.0, 80, '%', 5],[268.0, 0.9, 'T', 5],[280.0, 98, '%', 6],[305.0, 67, '%', 6],[383.0, 2, 'DTIs', 7]

Na3Bi
###Signatures of Helical Edge Transport in Millimetre-Scale Thin Films of Na3Bi|Chang Liu,Dimitrie Culcer,Mark T. Edmonds,Michael S. Fuhrer###
(1635518, 1635520)
 Here, we study 2DTI few-layer Na3Bi oninsulating Al2O3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 2, 'DTIs', 2],[54.0, 2, 'DTI', 1],[6.0, 2, 'DTI', 0],[114.0, 80, '%', 2],[118.0, 0.9, 'T', 2],[130.0, 98, '%', 3],[155.0, 67, '%', 3],[233.0, 2, 'DTIs', 4]

Al2O3
###Signatures of Helical Edge Transport in Millimetre-Scale Thin Films of Na3Bi|Chang Liu,Dimitrie Culcer,Mark T. Edmonds,Michael S. Fuhrer###
(1635527, 1635530)
 Here, we study 2DTI few-layer Na3Bi oninsulating Al2O3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 2, 'DTIs', 2],[63.0, 2, 'DTI', 1],[15.0, 2, 'DTI', 0],[104.0, 80, '%', 2],[108.0, 0.9, 'T', 2],[120.0, 98, '%', 3],[145.0, 67, '%', 3],[223.0, 2, 'DTIs', 4]

S
###Tuning spin filtering by anchoring groups in benzene derivative molecular junctions|Dongzhe Li,Yannick J. Dappe,Alexander Smogunov###
(1635888, 1635888)
 Using ab initio calculations, we explorespin-polarized electron transport across single benzene derivatives attachedwith six different anchoring groups (S, CH3S, COOH, CNH2NH, NC andNO2) to Ni(111) electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 80, '%', 2],[131.0, 140, '%', 2],[174.0, 90, '%', 2]

CH3S
###Tuning spin filtering by anchoring groups in benzene derivative molecular junctions|Dongzhe Li,Yannick J. Dappe,Alexander Smogunov###
(1635891, 1635894)
 Using ab initio calculations, we explorespin-polarized electron transport across single benzene derivatives attachedwith six different anchoring groups (S, CH3S, COOH, CNH2NH, NC andNO2) to Ni(111) electrodes.
Featurization terminated normally.
0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 80, '%', 2],[125.0, 140, '%', 2],[168.0, 90, '%', 2]

COOH
###Tuning spin filtering by anchoring groups in benzene derivative molecular junctions|Dongzhe Li,Yannick J. Dappe,Alexander Smogunov###
(1635897, 1635900)
 Using ab initio calculations, we explorespin-polarized electron transport across single benzene derivatives attachedwith six different anchoring groups (S, CH3S, COOH, CNH2NH, NC andNO2) to Ni(111) electrodes.
Featurization terminated normally.
0.25,0,0,0,0,0.25,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 80, '%', 2],[119.0, 140, '%', 2],[162.0, 90, '%', 2]

CNH2NH
###Tuning spin filtering by anchoring groups in benzene derivative molecular junctions|Dongzhe Li,Yannick J. Dappe,Alexander Smogunov###
(1635903, 1635908)
 Using ab initio calculations, we explorespin-polarized electron transport across single benzene derivatives attachedwith six different anchoring groups (S, CH3S, COOH, CNH2NH, NC andNO2) to Ni(111) electrodes.
Featurization terminated normally.
0.5,0,0,0,0,0.16666666666666666,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 80, '%', 2],[111.0, 140, '%', 2],[154.0, 90, '%', 2]

NC
###Tuning spin filtering by anchoring groups in benzene derivative molecular junctions|Dongzhe Li,Yannick J. Dappe,Alexander Smogunov###
(1635911, 1635912)
 Using ab initio calculations, we explorespin-polarized electron transport across single benzene derivatives attachedwith six different anchoring groups (S, CH3S, COOH, CNH2NH, NC andNO2) to Ni(111) electrodes.
Featurization terminated normally.
0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 80, '%', 2],[107.0, 140, '%', 2],[150.0, 90, '%', 2]

O2
###Tuning spin filtering by anchoring groups in benzene derivative molecular junctions|Dongzhe Li,Yannick J. Dappe,Alexander Smogunov###
(1635918, 1635919)
 Using ab initio calculations, we explorespin-polarized electron transport across single benzene derivatives attachedwith six different anchoring groups (S, CH3S, COOH, CNH2NH, NC andNO2) to Ni(111) electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 80, '%', 2],[100.0, 140, '%', 2],[143.0, 90, '%', 2]

(SP)
###Tuning spin filtering by anchoring groups in benzene derivative molecular junctions|Dongzhe Li,Yannick J. Dappe,Alexander Smogunov###
(1635954, 1635957)
 We find that molecule-electrode coupling,conductance and spin polarization (SP) of electric current can be modifiedsignificantly by anchoring groups.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 80, '%', 1],[62.0, 140, '%', 1],[105.0, 90, '%', 1]

In
###Tuning spin filtering by anchoring groups in benzene derivative molecular junctions|Dongzhe Li,Yannick J. Dappe,Alexander Smogunov###
(1635981, 1635981)
 In particular, a high spin polarization (SP> 80%) and a giant magnetoresistance (MR > 140%) can be achieved for NO2terminations and, more interestingly, SP can be further enhanced (up to 90%) bya small voltage.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 80, '%', 0],[38.0, 140, '%', 0],[81.0, 90, '%', 0]

SP
###Tuning spin filtering by anchoring groups in benzene derivative molecular junctions|Dongzhe Li,Yannick J. Dappe,Alexander Smogunov###
(1635995, 1635996)
 In particular, a high spin polarization (SP> 80%) and a giant magnetoresistance (MR > 140%) can be achieved for NO2terminations and, more interestingly, SP can be further enhanced (up to 90%) bya small voltage.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 80, '%', 0],[23.0, 140, '%', 0],[66.0, 90, '%', 0]

NO2
###Tuning spin filtering by anchoring groups in benzene derivative molecular junctions|Dongzhe Li,Yannick J. Dappe,Alexander Smogunov###
(1636031, 1636033)
 In particular, a high spin polarization (SP> 80%) and a giant magnetoresistance (MR > 140%) can be achieved for NO2terminations and, more interestingly, SP can be further enhanced (up to 90%) bya small voltage.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 80, '%', 0],[12.0, 140, '%', 0],[29.0, 90, '%', 0]

SP
###Tuning spin filtering by anchoring groups in benzene derivative molecular junctions|Dongzhe Li,Yannick J. Dappe,Alexander Smogunov###
(1636046, 1636047)
 In particular, a high spin polarization (SP> 80%) and a giant magnetoresistance (MR > 140%) can be achieved for NO2terminations and, more interestingly, SP can be further enhanced (up to 90%) bya small voltage.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 80, '%', 0],[27.0, 140, '%', 0],[15.0, 90, '%', 0]

S
###Tuning spin filtering by anchoring groups in benzene derivative molecular junctions|Dongzhe Li,Yannick J. Dappe,Alexander Smogunov###
(1636078, 1636078)
 The S and CH3S systems, on the contrary, exhibit rather lowSP while intermediate values are found for COOH and CNH2NH groups.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 80, '%', 1],[59.0, 140, '%', 1],[16.0, 90, '%', 1]

CH3S
###Tuning spin filtering by anchoring groups in benzene derivative molecular junctions|Dongzhe Li,Yannick J. Dappe,Alexander Smogunov###
(1636082, 1636085)
 The S and CH3S systems, on the contrary, exhibit rather lowSP while intermediate values are found for COOH and CNH2NH groups.
Featurization terminated normally.
0.6,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 80, '%', 1],[63.0, 140, '%', 1],[20.0, 90, '%', 1]

SP
###Tuning spin filtering by anchoring groups in benzene derivative molecular junctions|Dongzhe Li,Yannick J. Dappe,Alexander Smogunov###
(1636104, 1636105)
 The S and CH3S systems, on the contrary, exhibit rather lowSP while intermediate values are found for COOH and CNH2NH groups.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 80, '%', 1],[85.0, 140, '%', 1],[42.0, 90, '%', 1]

COOH
###Tuning spin filtering by anchoring groups in benzene derivative molecular junctions|Dongzhe Li,Yannick J. Dappe,Alexander Smogunov###
(1636119, 1636122)
 The S and CH3S systems, on the contrary, exhibit rather lowSP while intermediate values are found for COOH and CNH2NH groups.
Featurization terminated normally.
0.25,0,0,0,0,0.25,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 80, '%', 1],[100.0, 140, '%', 1],[57.0, 90, '%', 1]

CNH2NH
###Tuning spin filtering by anchoring groups in benzene derivative molecular junctions|Dongzhe Li,Yannick J. Dappe,Alexander Smogunov###
(1636126, 1636131)
 The S and CH3S systems, on the contrary, exhibit rather lowSP while intermediate values are found for COOH and CNH2NH groups.
Featurization terminated normally.
0.5,0,0,0,0,0.16666666666666666,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 80, '%', 1],[107.0, 140, '%', 1],[64.0, 90, '%', 1]

ZnO/MgO
###Tunneling Magnetoresistance and Spin-Dependent Diode Performance in Fully Epitaxial Magnetic Tunnel Junctions with Rock-salt Type ZnO/MgO|Hidekazu Saito,Sai Krishna Narayananellore,Norihiro Matsuo,Naoki Doko,Shintaro Kon,Yukiko Yasukawa,Hiroshi Imamura,Shinji Yuasa###
(1636290, 1636294)
Tunneling Magnetoresistance and Spin-Dependent Diode Performance in Fully Epitaxial Magnetic Tunnel Junctions with Rock-salt Type ZnO/MgO.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[84.0, 96, '%', 2],[203.0, 1.3, 'A', 3]

Fe/ZnO/MgO/Fe
###Tunneling Magnetoresistance and Spin-Dependent Diode Performance in Fully Epitaxial Magnetic Tunnel Junctions with Rock-salt Type ZnO/MgO|Hidekazu Saito,Sai Krishna Narayananellore,Norihiro Matsuo,Naoki Doko,Shintaro Kon,Yukiko Yasukawa,Hiroshi Imamura,Shinji Yuasa###
(1636305, 1636313)
 We fabricate fully epitaxial Fe/ZnO/MgO/Fe magnetic tunnel junctions (MTJs)with a bilayer tunnel barrier, in which ZnO has a metastable rock-salt crystalstructure.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[65.0, 96, '%', 1],[184.0, 1.3, 'A', 2]

ZnO
###Tunneling Magnetoresistance and Spin-Dependent Diode Performance in Fully Epitaxial Magnetic Tunnel Junctions with Rock-salt Type ZnO/MgO|Hidekazu Saito,Sai Krishna Narayananellore,Norihiro Matsuo,Naoki Doko,Shintaro Kon,Yukiko Yasukawa,Hiroshi Imamura,Shinji Yuasa###
(1636343, 1636344)
 We fabricate fully epitaxial Fe/ZnO/MgO/Fe magnetic tunnel junctions (MTJs)with a bilayer tunnel barrier, in which ZnO has a metastable rock-salt crystalstructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 96, '%', 1],[153.0, 1.3, 'A', 2]

Fe
###Tunneling Magnetoresistance and Spin-Dependent Diode Performance in Fully Epitaxial Magnetic Tunnel Junctions with Rock-salt Type ZnO/MgO|Hidekazu Saito,Sai Krishna Narayananellore,Norihiro Matsuo,Naoki Doko,Shintaro Kon,Yukiko Yasukawa,Hiroshi Imamura,Shinji Yuasa###
(1636444, 1636444)
 We observe a high magnetoresistance ratio up to 96% at roomtemperature (RT) and find that these MTJs have asymmetric current-voltagecharacteristics, and their rectifying performances are largely dependent on themagnetization alignments of the Fe electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 96, '%', 0],[53.0, 1.3, 'A', 1]

W
###Tunneling Magnetoresistance and Spin-Dependent Diode Performance in Fully Epitaxial Magnetic Tunnel Junctions with Rock-salt Type ZnO/MgO|Hidekazu Saito,Sai Krishna Narayananellore,Norihiro Matsuo,Naoki Doko,Shintaro Kon,Yukiko Yasukawa,Hiroshi Imamura,Shinji Yuasa###
(1636499, 1636499)
 Diode responsibilities at azero-bias voltage (beta0), which is an important performance index forharvesting applications, are observed up to 1.3 A/W at RT in the antiparallelalignment of the magnetizations while maintaining rather low resistance-area(R<missing VAR>A) products (a few tens of k<missing VAR>Omegamum<missing VAR>2).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 96, '%', 1],[2.0, 1.3, 'A', 0]

(Fe)
###Tunneling Magnetoresistance and Spin-Dependent Diode Performance in Fully Epitaxial Magnetic Tunnel Junctions with Rock-salt Type ZnO/MgO|Hidekazu Saito,Sai Krishna Narayananellore,Norihiro Matsuo,Naoki Doko,Shintaro Kon,Yukiko Yasukawa,Hiroshi Imamura,Shinji Yuasa###
(1636575, 1636577)
 Even with the same top andbottom electrodes (Fe), the obtained beta0 values are comparable to thoseof reported high-performance tunnel diodes consisting of amorphous bilayertunnel barriers with polycrystalline dissimilar electrodes.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[197.0, 96, '%', 2],[78.0, 1.3, 'A', 1]

ZnO/MgO
###Tunneling Magnetoresistance and Spin-Dependent Diode Performance in Fully Epitaxial Magnetic Tunnel Junctions with Rock-salt Type ZnO/MgO|Hidekazu Saito,Sai Krishna Narayananellore,Norihiro Matsuo,Naoki Doko,Shintaro Kon,Yukiko Yasukawa,Hiroshi Imamura,Shinji Yuasa###
(1636645, 1636649)
 This stronglysuggests that the epitaxial ZnO/MgO bilayer tunnel barrier is effective forenhancing the beta0 without significant increase in the R<missing VAR>A.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[267.0, 96, '%', 3],[148.0, 1.3, 'A', 2]

In
###Tunneling Magnetoresistance and Spin-Dependent Diode Performance in Fully Epitaxial Magnetic Tunnel Junctions with Rock-salt Type ZnO/MgO|Hidekazu Saito,Sai Krishna Narayananellore,Norihiro Matsuo,Naoki Doko,Shintaro Kon,Yukiko Yasukawa,Hiroshi Imamura,Shinji Yuasa###
(1636685, 1636685)
 In addition,we demonstrate that a zero-bias anomaly in thetunnel conductance, whichoriginates from the magnon excitations at the Fe/barrier interfaces, plays acrucial role in observed spin-dependent diode performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[307.0, 96, '%', 4],[188.0, 1.3, 'A', 3]

Fe
###Tunneling Magnetoresistance and Spin-Dependent Diode Performance in Fully Epitaxial Magnetic Tunnel Junctions with Rock-salt Type ZnO/MgO|Hidekazu Saito,Sai Krishna Narayananellore,Norihiro Matsuo,Naoki Doko,Shintaro Kon,Yukiko Yasukawa,Hiroshi Imamura,Shinji Yuasa###
(1636729, 1636729)
 In addition,we demonstrate that a zero-bias anomaly in thetunnel conductance, whichoriginates from the magnon excitations at the Fe/barrier interfaces, plays acrucial role in observed spin-dependent diode performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[351.0, 96, '%', 4],[232.0, 1.3, 'A', 3]

I
###Nonlinear planar Hall effect|Pan He,Steven S. -L. Zhang,Dapeng Zhu,Shuyuan Shi,Olle G. Heinonen,Giovanni Vignale,Hyunsoo Yang###
(1636855, 1636855)
 An intriguing property of three-dimensional (3D) topological insulator (T<missing VAR>I)is the existence of surface states with spin-momentum locking, which offers anew frontier of exploration in spintronics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 3, 'D', 1]

I
###Nonlinear planar Hall effect|Pan He,Steven S. -L. Zhang,Dapeng Zhu,Shuyuan Shi,Olle G. Heinonen,Giovanni Vignale,Hyunsoo Yang###
(1636932, 1636932)
 Here, we report the observation ofa new type of Hall effect in a 3D T<missing VAR>I Bi2Se3 film.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 3, 'D', 0]

Bi2Se3
###Nonlinear planar Hall effect|Pan He,Steven S. -L. Zhang,Dapeng Zhu,Shuyuan Shi,Olle G. Heinonen,Giovanni Vignale,Hyunsoo Yang###
(1636934, 1636937)
 Here, we report the observation ofa new type of Hall effect in a 3D T<missing VAR>I Bi2Se3 film.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 3, 'D', 0]

S
###Crossover from two-dimensional to three-dimensional superconducting states in bismuth-based cuprate superconductor|Jing Guo,Yazhou Zhou,Cheng Huang,Shu Cai,Yutao Sheng,Genda Gu,Chongli Yang,Gongchang Lin,Ke Yang,Aiguo Li,Qi Wu,Tao Xiang,Liling Sun###
(1637307, 1637307)
 To decipher the mechanism of high temperature superconductivity, it isimportant to know how the superconducting pairing emerges from the unusualnormal states of cuprate superconductors, including pseudogap, anomalous Fermiliquid and strange metal (SM).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 2.8, 'GPa', 2],[242.0, 2, 'D', 4],[271.0, 2, 'D', 4]

S
###Crossover from two-dimensional to three-dimensional superconducting states in bismuth-based cuprate superconductor|Jing Guo,Yazhou Zhou,Cheng Huang,Shu Cai,Yutao Sheng,Genda Gu,Chongli Yang,Gongchang Lin,Ke Yang,Aiguo Li,Qi Wu,Tao Xiang,Liling Sun###
(1637347, 1637347)
 A long-standing issue under debate is how thesuperconducting pairing is formed and condensed in the SM<missing VAR> phase because thesuperconducting transition temperature is the highest in this phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 2.8, 'GPa', 1],[202.0, 2, 'D', 3],[231.0, 2, 'D', 3]

Bi2Sr2CaCu2O8
###Crossover from two-dimensional to three-dimensional superconducting states in bismuth-based cuprate superconductor|Jing Guo,Yazhou Zhou,Cheng Huang,Shu Cai,Yutao Sheng,Genda Gu,Chongli Yang,Gongchang Lin,Ke Yang,Aiguo Li,Qi Wu,Tao Xiang,Liling Sun###
(1637427, 1637435)
 Here, wereport the first experimental observation of a pressure-induced crossover fromtwo- to three-dimensional superconducting states in the optimally-dopedBi2Sr2CaCu2O8delta bulk superconductor at a pressure above 2.8 GPa, throughstate-of-the-art in-situ high-pressure measurements of resistance,magnetoresistance and magnetic susceptibility.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.06666666666666667,0,0,0,0,0,0,0,0,0.13333333333333333,0,0,0,0,0,0,0,0,0.13333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 2.8, 'GPa', 0],[114.0, 2, 'D', 2],[143.0, 2, 'D', 2]

S
###Crossover from two-dimensional to three-dimensional superconducting states in bismuth-based cuprate superconductor|Jing Guo,Yazhou Zhou,Cheng Huang,Shu Cai,Yutao Sheng,Genda Gu,Chongli Yang,Gongchang Lin,Ke Yang,Aiguo Li,Qi Wu,Tao Xiang,Liling Sun###
(1637570, 1637570)
 Theemergence of this 2D superconducting transition provides direct and strongevidence that the SM<missing VAR> state is predominantly 2D-like.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 2.8, 'GPa', 2],[21.0, 2, 'D', 0],[8.0, 2, 'D', 0]

MnBi2Te4
###Crystal Growth and basic transport and magnetic properties of MnBi2Te4|Poonam Rani,Ankush Saxena,Rabia Sultana,Vipin Nagpal,S. S. Islam,S. Patnaik,V. P. S. Awana###
(1637639, 1637643)
Crystal Growth and basic transport and magnetic properties of MnBi2Te4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 600, 'C', 2],[84.0, 24, 'hours', 2],[184.0, 150, 'K', 4],[204.0, 25, 'K', 4],[252.0, 150, 'K', 5],[255.0, 20, 'K', 5],[262.0, 25, 'K', 6],[314.0, 6, 'Tesla', 7],[326.0, 3, 'Tesla', 7]

I
###Crystal Growth and basic transport and magnetic properties of MnBi2Te4|Poonam Rani,Ankush Saxena,Rabia Sultana,Vipin Nagpal,S. S. Islam,S. Patnaik,V. P. S. Awana###
(1637665, 1637665)
 We report successful growth of magnetic topological insulator (MTI) MnBi2Te4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 600, 'C', 1],[62.0, 24, 'hours', 1],[162.0, 150, 'K', 3],[182.0, 25, 'K', 3],[230.0, 150, 'K', 4],[233.0, 20, 'K', 4],[240.0, 25, 'K', 5],[292.0, 6, 'Tesla', 6],[304.0, 3, 'Tesla', 6]

MnBi2Te4
###Crystal Growth and basic transport and magnetic properties of MnBi2Te4|Poonam Rani,Ankush Saxena,Rabia Sultana,Vipin Nagpal,S. S. Islam,S. Patnaik,V. P. S. Awana###
(1637668, 1637672)
 We report successful growth of magnetic topological insulator (MTI) MnBi2Te4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 600, 'C', 1],[55.0, 24, 'hours', 1],[155.0, 150, 'K', 3],[175.0, 25, 'K', 3],[223.0, 150, 'K', 4],[226.0, 20, 'K', 4],[233.0, 25, 'K', 5],[285.0, 6, 'Tesla', 6],[297.0, 3, 'Tesla', 6]

C
###Crystal Growth and basic transport and magnetic properties of MnBi2Te4|Poonam Rani,Ankush Saxena,Rabia Sultana,Vipin Nagpal,S. S. Islam,S. Patnaik,V. P. S. Awana###
(1637704, 1637704)
The heating schedule basically deals with growth of the crystal from melt at900C and very slow cooling (1C/hr) to around 600C with 24 hours hold time,followed by cooling to room temperature.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 600, 'C', 0],[23.0, 24, 'hours', 0],[123.0, 150, 'K', 2],[143.0, 25, 'K', 2],[191.0, 150, 'K', 3],[194.0, 20, 'K', 3],[201.0, 25, 'K', 4],[253.0, 6, 'Tesla', 5],[265.0, 3, 'Tesla', 5]

C
###Crystal Growth and basic transport and magnetic properties of MnBi2Te4|Poonam Rani,Ankush Saxena,Rabia Sultana,Vipin Nagpal,S. S. Islam,S. Patnaik,V. P. S. Awana###
(1637716, 1637716)
The heating schedule basically deals with growth of the crystal from melt at900C and very slow cooling (1C/hr) to around 600C with 24 hours hold time,followed by cooling to room temperature.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 600, 'C', 0],[11.0, 24, 'hours', 0],[111.0, 150, 'K', 2],[131.0, 25, 'K', 2],[179.0, 150, 'K', 3],[182.0, 20, 'K', 3],[189.0, 25, 'K', 4],[241.0, 6, 'Tesla', 5],[253.0, 3, 'Tesla', 5]

P
###Crystal Growth and basic transport and magnetic properties of MnBi2Te4|Poonam Rani,Ankush Saxena,Rabia Sultana,Vipin Nagpal,S. S. Islam,S. Patnaik,V. P. S. Awana###
(1637753, 1637753)
 Our detailed, PXRD Reitveld analysisshowed that the resultant crystal is dominated mainly by MnBi2Te4 and minorphases of Bi2Te3 and MnTe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 600, 'C', 1],[26.0, 24, 'hours', 1],[74.0, 150, 'K', 1],[94.0, 25, 'K', 1],[142.0, 150, 'K', 2],[145.0, 20, 'K', 2],[152.0, 25, 'K', 3],[204.0, 6, 'Tesla', 4],[216.0, 3, 'Tesla', 4]

MnBi2Te4
###Crystal Growth and basic transport and magnetic properties of MnBi2Te4|Poonam Rani,Ankush Saxena,Rabia Sultana,Vipin Nagpal,S. S. Islam,S. Patnaik,V. P. S. Awana###
(1637781, 1637785)
 Our detailed, PXRD Reitveld analysisshowed that the resultant crystal is dominated mainly by MnBi2Te4 and minorphases of Bi2Te3 and MnTe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 600, 'C', 1],[54.0, 24, 'hours', 1],[42.0, 150, 'K', 1],[62.0, 25, 'K', 1],[110.0, 150, 'K', 2],[113.0, 20, 'K', 2],[120.0, 25, 'K', 3],[172.0, 6, 'Tesla', 4],[184.0, 3, 'Tesla', 4]

Bi2Te3
###Crystal Growth and basic transport and magnetic properties of MnBi2Te4|Poonam Rani,Ankush Saxena,Rabia Sultana,Vipin Nagpal,S. S. Islam,S. Patnaik,V. P. S. Awana###
(1637796, 1637799)
 Our detailed, PXRD Reitveld analysisshowed that the resultant crystal is dominated mainly by MnBi2Te4 and minorphases of Bi2Te3 and MnTe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 600, 'C', 1],[69.0, 24, 'hours', 1],[28.0, 150, 'K', 1],[48.0, 25, 'K', 1],[96.0, 150, 'K', 2],[99.0, 20, 'K', 2],[106.0, 25, 'K', 3],[158.0, 6, 'Tesla', 4],[170.0, 3, 'Tesla', 4]

MnTe
###Crystal Growth and basic transport and magnetic properties of MnBi2Te4|Poonam Rani,Ankush Saxena,Rabia Sultana,Vipin Nagpal,S. S. Islam,S. Patnaik,V. P. S. Awana###
(1637803, 1637804)
 Our detailed, PXRD Reitveld analysisshowed that the resultant crystal is dominated mainly by MnBi2Te4 and minorphases of Bi2Te3 and MnTe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 600, 'C', 1],[76.0, 24, 'hours', 1],[23.0, 150, 'K', 1],[43.0, 25, 'K', 1],[91.0, 150, 'K', 2],[94.0, 20, 'K', 2],[101.0, 25, 'K', 3],[153.0, 6, 'Tesla', 4],[165.0, 3, 'Tesla', 4]

P
###Crystal Growth and basic transport and magnetic properties of MnBi2Te4|Poonam Rani,Ankush Saxena,Rabia Sultana,Vipin Nagpal,S. S. Islam,S. Patnaik,V. P. S. Awana###
(1637851, 1637851)
 The transport measurements showed a step likebehavior at around 150K followed by cusp like structure in resistivity ataround 25K (T<missing VAR>P) due reported anti-ferromagnetic ordering of Mn.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 600, 'C', 2],[124.0, 24, 'hours', 2],[24.0, 150, 'K', 0],[4.0, 25, 'K', 0],[44.0, 150, 'K', 1],[47.0, 20, 'K', 1],[54.0, 25, 'K', 2],[106.0, 6, 'Tesla', 3],[118.0, 3, 'Tesla', 3]

Mn
###Crystal Growth and basic transport and magnetic properties of MnBi2Te4|Poonam Rani,Ankush Saxena,Rabia Sultana,Vipin Nagpal,S. S. Islam,S. Patnaik,V. P. S. Awana###
(1637866, 1637866)
 The transport measurements showed a step likebehavior at around 150K followed by cusp like structure in resistivity ataround 25K (T<missing VAR>P) due reported anti-ferromagnetic ordering of Mn.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 600, 'C', 2],[139.0, 24, 'hours', 2],[39.0, 150, 'K', 0],[19.0, 25, 'K', 0],[29.0, 150, 'K', 1],[32.0, 20, 'K', 1],[39.0, 25, 'K', 2],[91.0, 6, 'Tesla', 3],[103.0, 3, 'Tesla', 3]

K
###Crystal Growth and basic transport and magnetic properties of MnBi2Te4|Poonam Rani,Ankush Saxena,Rabia Sultana,Vipin Nagpal,S. S. Islam,S. Patnaik,V. P. S. Awana###
(1637935, 1637935)
 Low temperature (5K) magnetoresistance (MR) in applied field ofup to 6 Tesla exhibited negative ve MR below 3 Tesla and ve for higher fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[211.0, 600, 'C', 5],[208.0, 24, 'hours', 5],[108.0, 150, 'K', 3],[88.0, 25, 'K', 3],[40.0, 150, 'K', 2],[37.0, 20, 'K', 2],[30.0, 25, 'K', 1],[22.0, 6, 'Tesla', 0],[34.0, 3, 'Tesla', 0]

MnBi2Te4
###Crystal Growth and basic transport and magnetic properties of MnBi2Te4|Poonam Rani,Ankush Saxena,Rabia Sultana,Vipin Nagpal,S. S. Islam,S. Patnaik,V. P. S. Awana###
(1638008, 1638012)
 The studied MnBi2Te4 MTI crystalcould be a possible candidate for Quantum Anomalous Hall (Q<missing VAR>AH) effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[284.0, 600, 'C', 7],[281.0, 24, 'hours', 7],[181.0, 150, 'K', 5],[161.0, 25, 'K', 5],[113.0, 150, 'K', 4],[110.0, 20, 'K', 4],[103.0, 25, 'K', 3],[51.0, 6, 'Tesla', 2],[39.0, 3, 'Tesla', 2]

I
###Crystal Growth and basic transport and magnetic properties of MnBi2Te4|Poonam Rani,Ankush Saxena,Rabia Sultana,Vipin Nagpal,S. S. Islam,S. Patnaik,V. P. S. Awana###
(1638016, 1638016)
 The studied MnBi2Te4 MTI crystalcould be a possible candidate for Quantum Anomalous Hall (Q<missing VAR>AH) effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[292.0, 600, 'C', 7],[289.0, 24, 'hours', 7],[189.0, 150, 'K', 5],[169.0, 25, 'K', 5],[121.0, 150, 'K', 4],[118.0, 20, 'K', 4],[111.0, 25, 'K', 3],[59.0, 6, 'Tesla', 2],[47.0, 3, 'Tesla', 2]

H
###Crystal Growth and basic transport and magnetic properties of MnBi2Te4|Poonam Rani,Ankush Saxena,Rabia Sultana,Vipin Nagpal,S. S. Islam,S. Patnaik,V. P. S. Awana###
(1638042, 1638042)
 The studied MnBi2Te4 MTI crystalcould be a possible candidate for Quantum Anomalous Hall (Q<missing VAR>AH) effect.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[318.0, 600, 'C', 7],[315.0, 24, 'hours', 7],[215.0, 150, 'K', 5],[195.0, 25, 'K', 5],[147.0, 150, 'K', 4],[144.0, 20, 'K', 4],[137.0, 25, 'K', 3],[85.0, 6, 'Tesla', 2],[73.0, 3, 'Tesla', 2]

TaSe3
###Observation of charge density wave transition in TaSe3 mesowires|J. Yang,Y. Q. Wang,R. R. Zhang,L. Ma,W. Liu,Z. Qu,L. Zhang,S. L. Zhang,W. Tong,L. Pi,W. K. Zhu,C. J. Zhang###
(1638070, 1638072)
Observation of charge density wave transition in TaSe3 mesowires.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[192.0, 65, 'K', 4],[317.0, 50, 'K', 6]

TaSe3
###Observation of charge density wave transition in TaSe3 mesowires|J. Yang,Y. Q. Wang,R. R. Zhang,L. Ma,W. Liu,Z. Qu,L. Zhang,S. L. Zhang,W. Tong,L. Pi,W. K. Zhu,C. J. Zhang###
(1638092, 1638094)
 The quasi-one-dimensional (quasi-1D) TaSe3 attracts considerable attentionfor its intriguing superconductivity and possible interplay with nontrivialtopology and charge density wave (CD<missing VAR>W) state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[170.0, 65, 'K', 3],[295.0, 50, 'K', 5]

C
###Observation of charge density wave transition in TaSe3 mesowires|J. Yang,Y. Q. Wang,R. R. Zhang,L. Ma,W. Liu,Z. Qu,L. Zhang,S. L. Zhang,W. Tong,L. Pi,W. K. Zhu,C. J. Zhang###
(1638133, 1638133)
 The quasi-one-dimensional (quasi-1D) TaSe3 attracts considerable attentionfor its intriguing superconductivity and possible interplay with nontrivialtopology and charge density wave (CD<missing VAR>W) state.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 65, 'K', 3],[256.0, 50, 'K', 5]

W
###Observation of charge density wave transition in TaSe3 mesowires|J. Yang,Y. Q. Wang,R. R. Zhang,L. Ma,W. Liu,Z. Qu,L. Zhang,S. L. Zhang,W. Tong,L. Pi,W. K. Zhu,C. J. Zhang###
(1638135, 1638135)
 The quasi-one-dimensional (quasi-1D) TaSe3 attracts considerable attentionfor its intriguing superconductivity and possible interplay with nontrivialtopology and charge density wave (CD<missing VAR>W) state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 65, 'K', 3],[254.0, 50, 'K', 5]

C
###Observation of charge density wave transition in TaSe3 mesowires|J. Yang,Y. Q. Wang,R. R. Zhang,L. Ma,W. Liu,Z. Qu,L. Zhang,S. L. Zhang,W. Tong,L. Pi,W. K. Zhu,C. J. Zhang###
(1638154, 1638154)
 However, unlike the isostructuralanalogues, CD<missing VAR>W has not been observed for TaSe3 despite its quasi-1D<missing VAR> characterthat is supposed to promote Peierls instabilities and CD<missing VAR>W.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 65, 'K', 2],[235.0, 50, 'K', 4]

W
###Observation of charge density wave transition in TaSe3 mesowires|J. Yang,Y. Q. Wang,R. R. Zhang,L. Ma,W. Liu,Z. Qu,L. Zhang,S. L. Zhang,W. Tong,L. Pi,W. K. Zhu,C. J. Zhang###
(1638156, 1638156)
 However, unlike the isostructuralanalogues, CD<missing VAR>W has not been observed for TaSe3 despite its quasi-1D<missing VAR> characterthat is supposed to promote Peierls instabilities and CD<missing VAR>W.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 65, 'K', 2],[233.0, 50, 'K', 4]

TaSe3
###Observation of charge density wave transition in TaSe3 mesowires|J. Yang,Y. Q. Wang,R. R. Zhang,L. Ma,W. Liu,Z. Qu,L. Zhang,S. L. Zhang,W. Tong,L. Pi,W. K. Zhu,C. J. Zhang###
(1638168, 1638170)
 However, unlike the isostructuralanalogues, CD<missing VAR>W has not been observed for TaSe3 despite its quasi-1D<missing VAR> characterthat is supposed to promote Peierls instabilities and CD<missing VAR>W.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 65, 'K', 2],[219.0, 50, 'K', 4]

C
###Observation of charge density wave transition in TaSe3 mesowires|J. Yang,Y. Q. Wang,R. R. Zhang,L. Ma,W. Liu,Z. Qu,L. Zhang,S. L. Zhang,W. Tong,L. Pi,W. K. Zhu,C. J. Zhang###
(1638200, 1638200)
 However, unlike the isostructuralanalogues, CD<missing VAR>W has not been observed for TaSe3 despite its quasi-1D<missing VAR> characterthat is supposed to promote Peierls instabilities and CD<missing VAR>W.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 65, 'K', 2],[189.0, 50, 'K', 4]

W
###Observation of charge density wave transition in TaSe3 mesowires|J. Yang,Y. Q. Wang,R. R. Zhang,L. Ma,W. Liu,Z. Qu,L. Zhang,S. L. Zhang,W. Tong,L. Pi,W. K. Zhu,C. J. Zhang###
(1638202, 1638202)
 However, unlike the isostructuralanalogues, CD<missing VAR>W has not been observed for TaSe3 despite its quasi-1D<missing VAR> characterthat is supposed to promote Peierls instabilities and CD<missing VAR>W.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 65, 'K', 2],[187.0, 50, 'K', 4]

TaSe3
###Observation of charge density wave transition in TaSe3 mesowires|J. Yang,Y. Q. Wang,R. R. Zhang,L. Ma,W. Liu,Z. Qu,L. Zhang,S. L. Zhang,W. Tong,L. Pi,W. K. Zhu,C. J. Zhang###
(1638212, 1638214)
 Here we synthesizeTaSe3 mesowires (M<missing VAR>Ws) using a one-step approach.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 65, 'K', 1],[175.0, 50, 'K', 3]

W
###Observation of charge density wave transition in TaSe3 mesowires|J. Yang,Y. Q. Wang,R. R. Zhang,L. Ma,W. Liu,Z. Qu,L. Zhang,S. L. Zhang,W. Tong,L. Pi,W. K. Zhu,C. J. Zhang###
(1638239, 1638239)
 For the M<missing VAR>W of 300 nm thick, adistinct CD<missing VAR>W transition occurs at 65 K in the resistivity measurement, whichhas not been reported before and is further evidenced by the Ramancharacterization and susceptibility measurement.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 65, 'K', 0],[150.0, 50, 'K', 2]

C
###Observation of charge density wave transition in TaSe3 mesowires|J. Yang,Y. Q. Wang,R. R. Zhang,L. Ma,W. Liu,Z. Qu,L. Zhang,S. L. Zhang,W. Tong,L. Pi,W. K. Zhu,C. J. Zhang###
(1638255, 1638255)
 For the M<missing VAR>W of 300 nm thick, adistinct CD<missing VAR>W transition occurs at 65 K in the resistivity measurement, whichhas not been reported before and is further evidenced by the Ramancharacterization and susceptibility measurement.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 65, 'K', 0],[134.0, 50, 'K', 2]

W
###Observation of charge density wave transition in TaSe3 mesowires|J. Yang,Y. Q. Wang,R. R. Zhang,L. Ma,W. Liu,Z. Qu,L. Zhang,S. L. Zhang,W. Tong,L. Pi,W. K. Zhu,C. J. Zhang###
(1638257, 1638257)
 For the M<missing VAR>W of 300 nm thick, adistinct CD<missing VAR>W transition occurs at 65 K in the resistivity measurement, whichhas not been reported before and is further evidenced by the Ramancharacterization and susceptibility measurement.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 65, 'K', 0],[132.0, 50, 'K', 2]

TaSe3
###Observation of charge density wave transition in TaSe3 mesowires|J. Yang,Y. Q. Wang,R. R. Zhang,L. Ma,W. Liu,Z. Qu,L. Zhang,S. L. Zhang,W. Tong,L. Pi,W. K. Zhu,C. J. Zhang###
(1638332, 1638334)
 For comparison, we have alsoprepared bulk single crystal TaSe3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 65, 'K', 1],[55.0, 50, 'K', 1]

C
###Observation of charge density wave transition in TaSe3 mesowires|J. Yang,Y. Q. Wang,R. R. Zhang,L. Ma,W. Liu,Z. Qu,L. Zhang,S. L. Zhang,W. Tong,L. Pi,W. K. Zhu,C. J. Zhang###
(1638415, 1638415)
 Although no anomaly appears in theresistivity and magnetoresistance measurements, the carrier type detected byHall effect varies from n<missing VAR>-type to p<missing VAR>-type below 50 K, suggesting areconstruction of Fermi surface that could be associated with CD<missing VAR>W.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 65, 'K', 2],[26.0, 50, 'K', 0]

W
###Observation of charge density wave transition in TaSe3 mesowires|J. Yang,Y. Q. Wang,R. R. Zhang,L. Ma,W. Liu,Z. Qu,L. Zhang,S. L. Zhang,W. Tong,L. Pi,W. K. Zhu,C. J. Zhang###
(1638417, 1638417)
 Although no anomaly appears in theresistivity and magnetoresistance measurements, the carrier type detected byHall effect varies from n<missing VAR>-type to p<missing VAR>-type below 50 K, suggesting areconstruction of Fermi surface that could be associated with CD<missing VAR>W.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 65, 'K', 2],[28.0, 50, 'K', 0]

C
###Observation of charge density wave transition in TaSe3 mesowires|J. Yang,Y. Q. Wang,R. R. Zhang,L. Ma,W. Liu,Z. Qu,L. Zhang,S. L. Zhang,W. Tong,L. Pi,W. K. Zhu,C. J. Zhang###
(1638427, 1638427)
 Theenhancement of CD<missing VAR>W in the M<missing VAR>Ws is attributed to the reduced dimensionality.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 65, 'K', 3],[38.0, 50, 'K', 1]

W
###Observation of charge density wave transition in TaSe3 mesowires|J. Yang,Y. Q. Wang,R. R. Zhang,L. Ma,W. Liu,Z. Qu,L. Zhang,S. L. Zhang,W. Tong,L. Pi,W. K. Zhu,C. J. Zhang###
(1638429, 1638429)
 Theenhancement of CD<missing VAR>W in the M<missing VAR>Ws is attributed to the reduced dimensionality.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 65, 'K', 3],[40.0, 50, 'K', 1]

TaSe3
###Observation of charge density wave transition in TaSe3 mesowires|J. Yang,Y. Q. Wang,R. R. Zhang,L. Ma,W. Liu,Z. Qu,L. Zhang,S. L. Zhang,W. Tong,L. Pi,W. K. Zhu,C. J. Zhang###
(1638452, 1638454)
TaSe3 is demonstrated to be a promising platform to study the correlation andcompetition of CD<missing VAR>W and superconductivity in the quasi-1D<missing VAR> systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 65, 'K', 4],[63.0, 50, 'K', 2]

C
###Observation of charge density wave transition in TaSe3 mesowires|J. Yang,Y. Q. Wang,R. R. Zhang,L. Ma,W. Liu,Z. Qu,L. Zhang,S. L. Zhang,W. Tong,L. Pi,W. K. Zhu,C. J. Zhang###
(1638485, 1638485)
TaSe3 is demonstrated to be a promising platform to study the correlation andcompetition of CD<missing VAR>W and superconductivity in the quasi-1D<missing VAR> systems.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[221.0, 65, 'K', 4],[96.0, 50, 'K', 2]

W
###Observation of charge density wave transition in TaSe3 mesowires|J. Yang,Y. Q. Wang,R. R. Zhang,L. Ma,W. Liu,Z. Qu,L. Zhang,S. L. Zhang,W. Tong,L. Pi,W. K. Zhu,C. J. Zhang###
(1638487, 1638487)
TaSe3 is demonstrated to be a promising platform to study the correlation andcompetition of CD<missing VAR>W and superconductivity in the quasi-1D<missing VAR> systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[223.0, 65, 'K', 4],[98.0, 50, 'K', 2]

SrFeO3
###Itinerancy-dependent non-collinear spin textures in SrFeO3, CaFeO3, and CaFeO3/SrFeO3 heterostructures probed via resonant x-ray scattering|Paul C. Rogge,Robert J. Green,Ronny Sutarto,Steven J. May###
(1638527, 1638530)
Itinerancy-dependent non-collinear spin textures in SrFeO3, CaFeO3, and CaFeO3/SrFeO3 heterostructures probed via resonant x<missing VAR>-ray scattering.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[362.0, 10, 'x', 6],[498.0, 1, 'unit', 8]

CaFeO3
###Itinerancy-dependent non-collinear spin textures in SrFeO3, CaFeO3, and CaFeO3/SrFeO3 heterostructures probed via resonant x-ray scattering|Paul C. Rogge,Robert J. Green,Ronny Sutarto,Steven J. May###
(1638533, 1638536)
Itinerancy-dependent non-collinear spin textures in SrFeO3, CaFeO3, and CaFeO3/SrFeO3 heterostructures probed via resonant x<missing VAR>-ray scattering.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[356.0, 10, 'x', 6],[492.0, 1, 'unit', 8]

CaFeO3/SrFeO3
###Itinerancy-dependent non-collinear spin textures in SrFeO3, CaFeO3, and CaFeO3/SrFeO3 heterostructures probed via resonant x-ray scattering|Paul C. Rogge,Robert J. Green,Ronny Sutarto,Steven J. May###
(1638541, 1638549)
Itinerancy-dependent non-collinear spin textures in SrFeO3, CaFeO3, and CaFeO3/SrFeO3 heterostructures probed via resonant x<missing VAR>-ray scattering.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[343.0, 10, 'x', 6],[479.0, 1, 'unit', 8]

SrFeO3
###Itinerancy-dependent non-collinear spin textures in SrFeO3, CaFeO3, and CaFeO3/SrFeO3 heterostructures probed via resonant x-ray scattering|Paul C. Rogge,Robert J. Green,Ronny Sutarto,Steven J. May###
(1638735, 1638738)
 Here we investigated the non-collinear, helicalspin structures in epitaxial films of the perovskite oxides SrFeO3 and CaFeO3using magnetotransport and resonant soft x<missing VAR>-ray magnetic diffraction.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 10, 'x', 3],[290.0, 1, 'unit', 5]

CaFeO3
###Itinerancy-dependent non-collinear spin textures in SrFeO3, CaFeO3, and CaFeO3/SrFeO3 heterostructures probed via resonant x-ray scattering|Paul C. Rogge,Robert J. Green,Ronny Sutarto,Steven J. May###
(1638742, 1638745)
 Here we investigated the non-collinear, helicalspin structures in epitaxial films of the perovskite oxides SrFeO3 and CaFeO3using magnetotransport and resonant soft x<missing VAR>-ray magnetic diffraction.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 10, 'x', 3],[283.0, 1, 'unit', 5]

SrFeO3
###Itinerancy-dependent non-collinear spin textures in SrFeO3, CaFeO3, and CaFeO3/SrFeO3 heterostructures probed via resonant x-ray scattering|Paul C. Rogge,Robert J. Green,Ronny Sutarto,Steven J. May###
(1638770, 1638773)
 MetallicSrFeO3 exhibits features in its magnetoresistance that are consistent with itsrecently proposed multi-q<missing VAR> structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 10, 'x', 2],[255.0, 1, 'unit', 4]

SrFeO3
###Itinerancy-dependent non-collinear spin textures in SrFeO3, CaFeO3, and CaFeO3/SrFeO3 heterostructures probed via resonant x-ray scattering|Paul C. Rogge,Robert J. Green,Ronny Sutarto,Steven J. May###
(1638821, 1638824)
 Additionally, the magnetic Bragg peak ofSrFeO3 measured at the Fe L<missing VAR> edge resonance energy asymmetrically broadens withdecreasing temperature in its multi-q<missing VAR> state.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 10, 'x', 1],[204.0, 1, 'unit', 3]

Fe
###Itinerancy-dependent non-collinear spin textures in SrFeO3, CaFeO3, and CaFeO3/SrFeO3 heterostructures probed via resonant x-ray scattering|Paul C. Rogge,Robert J. Green,Ronny Sutarto,Steven J. May###
(1638832, 1638832)
 Additionally, the magnetic Bragg peak ofSrFeO3 measured at the Fe L<missing VAR> edge resonance energy asymmetrically broadens withdecreasing temperature in its multi-q<missing VAR> state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 10, 'x', 1],[196.0, 1, 'unit', 3]

In
###Itinerancy-dependent non-collinear spin textures in SrFeO3, CaFeO3, and CaFeO3/SrFeO3 heterostructures probed via resonant x-ray scattering|Paul C. Rogge,Robert J. Green,Ronny Sutarto,Steven J. May###
(1638864, 1638864)
 In contrast, insulating CaFeO3 hasa symmetric scattering peak with an intensity 10x weaker than SrFeO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 10, 'x', 0],[164.0, 1, 'unit', 2]

CaFeO3
###Itinerancy-dependent non-collinear spin textures in SrFeO3, CaFeO3, and CaFeO3/SrFeO3 heterostructures probed via resonant x-ray scattering|Paul C. Rogge,Robert J. Green,Ronny Sutarto,Steven J. May###
(1638871, 1638874)
 In contrast, insulating CaFeO3 hasa symmetric scattering peak with an intensity 10x weaker than SrFeO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 10, 'x', 0],[154.0, 1, 'unit', 2]

SrFeO3
###Itinerancy-dependent non-collinear spin textures in SrFeO3, CaFeO3, and CaFeO3/SrFeO3 heterostructures probed via resonant x-ray scattering|Paul C. Rogge,Robert J. Green,Ronny Sutarto,Steven J. May###
(1638898, 1638901)
 In contrast, insulating CaFeO3 hasa symmetric scattering peak with an intensity 10x weaker than SrFeO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 10, 'x', 0],[127.0, 1, 'unit', 2]

O
###Itinerancy-dependent non-collinear spin textures in SrFeO3, CaFeO3, and CaFeO3/SrFeO3 heterostructures probed via resonant x-ray scattering|Paul C. Rogge,Robert J. Green,Ronny Sutarto,Steven J. May###
(1638913, 1638913)
 Enhancedmagnetic scattering at O K edge prepeak energies demonstrates the role of anegative charge transfer energy and the resulting oxygen ligand holes in themagnetic ordering of these ferrates.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 10, 'x', 1],[115.0, 1, 'unit', 1]

K
###Itinerancy-dependent non-collinear spin textures in SrFeO3, CaFeO3, and CaFeO3/SrFeO3 heterostructures probed via resonant x-ray scattering|Paul C. Rogge,Robert J. Green,Ronny Sutarto,Steven J. May###
(1638915, 1638915)
 Enhancedmagnetic scattering at O K edge prepeak energies demonstrates the role of anegative charge transfer energy and the resulting oxygen ligand holes in themagnetic ordering of these ferrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 10, 'x', 1],[113.0, 1, 'unit', 1]

CaFeO3/SrFeO3
###Itinerancy-dependent non-collinear spin textures in SrFeO3, CaFeO3, and CaFeO3/SrFeO3 heterostructures probed via resonant x-ray scattering|Paul C. Rogge,Robert J. Green,Ronny Sutarto,Steven J. May###
(1638981, 1638989)
 By measuring magnetic diffraction ofCaFeO3/SrFeO3 superlattices with thick CaFeO3 layers, we find that the CaFeO3helical ordering is coherent across 1 unit cell-thick SrFeO3 layers but not 6unit cell-thick layers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[89.0, 10, 'x', 2],[39.0, 1, 'unit', 0]

CaFeO3
###Itinerancy-dependent non-collinear spin textures in SrFeO3, CaFeO3, and CaFeO3/SrFeO3 heterostructures probed via resonant x-ray scattering|Paul C. Rogge,Robert J. Green,Ronny Sutarto,Steven J. May###
(1638997, 1639000)
 By measuring magnetic diffraction ofCaFeO3/SrFeO3 superlattices with thick CaFeO3 layers, we find that the CaFeO3helical ordering is coherent across 1 unit cell-thick SrFeO3 layers but not 6unit cell-thick layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 10, 'x', 2],[28.0, 1, 'unit', 0]

CaFeO3
###Itinerancy-dependent non-collinear spin textures in SrFeO3, CaFeO3, and CaFeO3/SrFeO3 heterostructures probed via resonant x-ray scattering|Paul C. Rogge,Robert J. Green,Ronny Sutarto,Steven J. May###
(1639013, 1639016)
 By measuring magnetic diffraction ofCaFeO3/SrFeO3 superlattices with thick CaFeO3 layers, we find that the CaFeO3helical ordering is coherent across 1 unit cell-thick SrFeO3 layers but not 6unit cell-thick layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 10, 'x', 2],[12.0, 1, 'unit', 0]

SrFeO3
###Itinerancy-dependent non-collinear spin textures in SrFeO3, CaFeO3, and CaFeO3/SrFeO3 heterostructures probed via resonant x-ray scattering|Paul C. Rogge,Robert J. Green,Ronny Sutarto,Steven J. May###
(1639034, 1639037)
 By measuring magnetic diffraction ofCaFeO3/SrFeO3 superlattices with thick CaFeO3 layers, we find that the CaFeO3helical ordering is coherent across 1 unit cell-thick SrFeO3 layers but not 6unit cell-thick layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 10, 'x', 2],[6.0, 1, 'unit', 0]

CaFeO3
###Itinerancy-dependent non-collinear spin textures in SrFeO3, CaFeO3, and CaFeO3/SrFeO3 heterostructures probed via resonant x-ray scattering|Paul C. Rogge,Robert J. Green,Ronny Sutarto,Steven J. May###
(1639065, 1639068)
 We conclude that insulating CaFeO3 supports only asimple single-q<missing VAR> helical structure in contrast to metallic SrFeO3 that hostsmulti-q<missing VAR> structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 10, 'x', 3],[37.0, 1, 'unit', 1]

SrFeO3
###Itinerancy-dependent non-collinear spin textures in SrFeO3, CaFeO3, and CaFeO3/SrFeO3 heterostructures probed via resonant x-ray scattering|Paul C. Rogge,Robert J. Green,Ronny Sutarto,Steven J. May###
(1639095, 1639098)
 We conclude that insulating CaFeO3 supports only asimple single-q<missing VAR> helical structure in contrast to metallic SrFeO3 that hostsmulti-q<missing VAR> structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[203.0, 10, 'x', 3],[67.0, 1, 'unit', 1]

YbAs
###Extremely large magnetoresistance and compensated Fermi surfaces in the antiferromagnetic semimetal YbAs|W. Xie,Y. Wu,F. Du,A. Wang,H. Su,Y. Chen,Z. Y. Nie,S. -K. Mo,M. Smidman,C. Cao,Y. Liu,T. Takabatake,H. Q. Yuan###
(1639182, 1639183)
Extremely large magnetoresistance and compensated Fermi surfaces in the antiferromagnetic semimetal YbAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[431.0, 0.5, 'K', 6]

In
###Extremely large magnetoresistance and compensated Fermi surfaces in the antiferromagnetic semimetal YbAs|W. Xie,Y. Wu,F. Du,A. Wang,H. Su,Y. Chen,Z. Y. Nie,S. -K. Mo,M. Smidman,C. Cao,Y. Liu,T. Takabatake,H. Q. Yuan###
(1639226, 1639226)
 In orderto examine whether the antiferromagnetic (AFM) semimetal YbAs (T<missing VAR>rmN  0.5K) exhibits such a scenario, we have grown high-quality single crystals using aflux method, and characterized the magnetic properties and electronic structureusing specific heat, magnetotransport and angle-resolved photoemissionspectroscopy (ARPES) measurements, together with density functional theory(DFT) calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[388.0, 0.5, 'K', 4]

F
###Extremely large magnetoresistance and compensated Fermi surfaces in the antiferromagnetic semimetal YbAs|W. Xie,Y. Wu,F. Du,A. Wang,H. Su,Y. Chen,Z. Y. Nie,S. -K. Mo,M. Smidman,C. Cao,Y. Liu,T. Takabatake,H. Q. Yuan###
(1639243, 1639243)
 In orderto examine whether the antiferromagnetic (AFM) semimetal YbAs (T<missing VAR>rmN  0.5K) exhibits such a scenario, we have grown high-quality single crystals using aflux method, and characterized the magnetic properties and electronic structureusing specific heat, magnetotransport and angle-resolved photoemissionspectroscopy (ARPES) measurements, together with density functional theory(DFT) calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[371.0, 0.5, 'K', 4]

YbAs
###Extremely large magnetoresistance and compensated Fermi surfaces in the antiferromagnetic semimetal YbAs|W. Xie,Y. Wu,F. Du,A. Wang,H. Su,Y. Chen,Z. Y. Nie,S. -K. Mo,M. Smidman,C. Cao,Y. Liu,T. Takabatake,H. Q. Yuan###
(1639249, 1639250)
 In orderto examine whether the antiferromagnetic (AFM) semimetal YbAs (T<missing VAR>rmN  0.5K) exhibits such a scenario, we have grown high-quality single crystals using aflux method, and characterized the magnetic properties and electronic structureusing specific heat, magnetotransport and angle-resolved photoemissionspectroscopy (ARPES) measurements, together with density functional theory(DFT) calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[364.0, 0.5, 'K', 4]

N
###Extremely large magnetoresistance and compensated Fermi surfaces in the antiferromagnetic semimetal YbAs|W. Xie,Y. Wu,F. Du,A. Wang,H. Su,Y. Chen,Z. Y. Nie,S. -K. Mo,M. Smidman,C. Cao,Y. Liu,T. Takabatake,H. Q. Yuan###
(1639255, 1639255)
 In orderto examine whether the antiferromagnetic (AFM) semimetal YbAs (T<missing VAR>rmN  0.5K) exhibits such a scenario, we have grown high-quality single crystals using aflux method, and characterized the magnetic properties and electronic structureusing specific heat, magnetotransport and angle-resolved photoemissionspectroscopy (ARPES) measurements, together with density functional theory(DFT) calculations.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[359.0, 0.5, 'K', 4]

K
###Extremely large magnetoresistance and compensated Fermi surfaces in the antiferromagnetic semimetal YbAs|W. Xie,Y. Wu,F. Du,A. Wang,H. Su,Y. Chen,Z. Y. Nie,S. -K. Mo,M. Smidman,C. Cao,Y. Liu,T. Takabatake,H. Q. Yuan###
(1639261, 1639261)
 In orderto examine whether the antiferromagnetic (AFM) semimetal YbAs (T<missing VAR>rmN  0.5K) exhibits such a scenario, we have grown high-quality single crystals using aflux method, and characterized the magnetic properties and electronic structureusing specific heat, magnetotransport and angle-resolved photoemissionspectroscopy (ARPES) measurements, together with density functional theory(DFT) calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[353.0, 0.5, 'K', 4]

S
###Extremely large magnetoresistance and compensated Fermi surfaces in the antiferromagnetic semimetal YbAs|W. Xie,Y. Wu,F. Du,A. Wang,H. Su,Y. Chen,Z. Y. Nie,S. -K. Mo,M. Smidman,C. Cao,Y. Liu,T. Takabatake,H. Q. Yuan###
(1639339, 1639339)
 In orderto examine whether the antiferromagnetic (AFM) semimetal YbAs (T<missing VAR>rmN  0.5K) exhibits such a scenario, we have grown high-quality single crystals using aflux method, and characterized the magnetic properties and electronic structureusing specific heat, magnetotransport and angle-resolved photoemissionspectroscopy (ARPES) measurements, together with density functional theory(DFT) calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[275.0, 0.5, 'K', 4]

S
###Extremely large magnetoresistance and compensated Fermi surfaces in the antiferromagnetic semimetal YbAs|W. Xie,Y. Wu,F. Du,A. Wang,H. Su,Y. Chen,Z. Y. Nie,S. -K. Mo,M. Smidman,C. Cao,Y. Liu,T. Takabatake,H. Q. Yuan###
(1639371, 1639371)
 Both ARPES and DFT calculations find no evidence for bandinversions in YbAs, indicating a topologically trivial electronic structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[243.0, 0.5, 'K', 3]

YbAs
###Extremely large magnetoresistance and compensated Fermi surfaces in the antiferromagnetic semimetal YbAs|W. Xie,Y. Wu,F. Du,A. Wang,H. Su,Y. Chen,Z. Y. Nie,S. -K. Mo,M. Smidman,C. Cao,Y. Liu,T. Takabatake,H. Q. Yuan###
(1639396, 1639397)
 Both ARPES and DFT calculations find no evidence for bandinversions in YbAs, indicating a topologically trivial electronic structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[217.0, 0.5, 'K', 3]

F
###Extremely large magnetoresistance and compensated Fermi surfaces in the antiferromagnetic semimetal YbAs|W. Xie,Y. Wu,F. Du,A. Wang,H. Su,Y. Chen,Z. Y. Nie,S. -K. Mo,M. Smidman,C. Cao,Y. Liu,T. Takabatake,H. Q. Yuan###
(1639469, 1639469)
From low-temperature magnetotransport measurements, we map thefield-temperature phase diagram, where we find the presence of a fieldstabilized phase distinct from the AFM<missing VAR> phase at low temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 0.5, 'K', 2]

YbAs
###Extremely large magnetoresistance and compensated Fermi surfaces in the antiferromagnetic semimetal YbAs|W. Xie,Y. Wu,F. Du,A. Wang,H. Su,Y. Chen,Z. Y. Nie,S. -K. Mo,M. Smidman,C. Cao,Y. Liu,T. Takabatake,H. Q. Yuan###
(1639500, 1639501)
 An extremelylarge magnetoresistance (XMR) for both YbAs and the nonmagnetic counterpartLuAs, is also observed, which can consistently be accounted for by the presenceof electron-hole compensation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 0.5, 'K', 1]

LuAs
###Extremely large magnetoresistance and compensated Fermi surfaces in the antiferromagnetic semimetal YbAs|W. Xie,Y. Wu,F. Du,A. Wang,H. Su,Y. Chen,Z. Y. Nie,S. -K. Mo,M. Smidman,C. Cao,Y. Liu,T. Takabatake,H. Q. Yuan###
(1639512, 1639513)
 An extremelylarge magnetoresistance (XMR) for both YbAs and the nonmagnetic counterpartLuAs, is also observed, which can consistently be accounted for by the presenceof electron-hole compensation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 0.5, 'K', 1]

YbAs
###Extremely large magnetoresistance and compensated Fermi surfaces in the antiferromagnetic semimetal YbAs|W. Xie,Y. Wu,F. Du,A. Wang,H. Su,Y. Chen,Z. Y. Nie,S. -K. Mo,M. Smidman,C. Cao,Y. Liu,T. Takabatake,H. Q. Yuan###
(1639590, 1639591)
 Moreover, an angle-dependent study of theShubnikov-de Haas effect oscillations reveals very similar Fermi surfacesbetween YbAs and LuAs, with light effective masses down to at least 0.5 K,indicating that the Yb-4f<missing VAR> electrons are well localized, and do not contributeto the Fermi surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 0.5, 'K', 0]

LuAs
###Extremely large magnetoresistance and compensated Fermi surfaces in the antiferromagnetic semimetal YbAs|W. Xie,Y. Wu,F. Du,A. Wang,H. Su,Y. Chen,Z. Y. Nie,S. -K. Mo,M. Smidman,C. Cao,Y. Liu,T. Takabatake,H. Q. Yuan###
(1639595, 1639596)
 Moreover, an angle-dependent study of theShubnikov-de Haas effect oscillations reveals very similar Fermi surfacesbetween YbAs and LuAs, with light effective masses down to at least 0.5 K,indicating that the Yb-4f<missing VAR> electrons are well localized, and do not contributeto the Fermi surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 0.5, 'K', 0]

Yb
###Extremely large magnetoresistance and compensated Fermi surfaces in the antiferromagnetic semimetal YbAs|W. Xie,Y. Wu,F. Du,A. Wang,H. Su,Y. Chen,Z. Y. Nie,S. -K. Mo,M. Smidman,C. Cao,Y. Liu,T. Takabatake,H. Q. Yuan###
(1639624, 1639624)
 Moreover, an angle-dependent study of theShubnikov-de Haas effect oscillations reveals very similar Fermi surfacesbetween YbAs and LuAs, with light effective masses down to at least 0.5 K,indicating that the Yb-4f<missing VAR> electrons are well localized, and do not contributeto the Fermi surface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 0.5, 'K', 0]

Yb
###Extremely large magnetoresistance and compensated Fermi surfaces in the antiferromagnetic semimetal YbAs|W. Xie,Y. Wu,F. Du,A. Wang,H. Su,Y. Chen,Z. Y. Nie,S. -K. Mo,M. Smidman,C. Cao,Y. Liu,T. Takabatake,H. Q. Yuan###
(1639669, 1639669)
 However, the influence of the localized Yb-4f<missing VAR> electronson the magnetotransport of YbAs can be discerned from the distinct temperaturedependence of the XMR compared to that of LuAs, which we attribute to theinfluence of short-ranged spin correlations that appear well above T<missing VAR>rmN.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 0.5, 'K', 1]

YbAs
###Extremely large magnetoresistance and compensated Fermi surfaces in the antiferromagnetic semimetal YbAs|W. Xie,Y. Wu,F. Du,A. Wang,H. Su,Y. Chen,Z. Y. Nie,S. -K. Mo,M. Smidman,C. Cao,Y. Liu,T. Takabatake,H. Q. Yuan###
(1639685, 1639686)
 However, the influence of the localized Yb-4f<missing VAR> electronson the magnetotransport of YbAs can be discerned from the distinct temperaturedependence of the XMR compared to that of LuAs, which we attribute to theinfluence of short-ranged spin correlations that appear well above T<missing VAR>rmN.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 0.5, 'K', 1]

LuAs
###Extremely large magnetoresistance and compensated Fermi surfaces in the antiferromagnetic semimetal YbAs|W. Xie,Y. Wu,F. Du,A. Wang,H. Su,Y. Chen,Z. Y. Nie,S. -K. Mo,M. Smidman,C. Cao,Y. Liu,T. Takabatake,H. Q. Yuan###
(1639721, 1639722)
 However, the influence of the localized Yb-4f<missing VAR> electronson the magnetotransport of YbAs can be discerned from the distinct temperaturedependence of the XMR compared to that of LuAs, which we attribute to theinfluence of short-ranged spin correlations that appear well above T<missing VAR>rmN.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 0.5, 'K', 1]

N
###Extremely large magnetoresistance and compensated Fermi surfaces in the antiferromagnetic semimetal YbAs|W. Xie,Y. Wu,F. Du,A. Wang,H. Su,Y. Chen,Z. Y. Nie,S. -K. Mo,M. Smidman,C. Cao,Y. Liu,T. Takabatake,H. Q. Yuan###
(1639758, 1639758)
 However, the influence of the localized Yb-4f<missing VAR> electronson the magnetotransport of YbAs can be discerned from the distinct temperaturedependence of the XMR compared to that of LuAs, which we attribute to theinfluence of short-ranged spin correlations that appear well above T<missing VAR>rmN.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 0.5, 'K', 1]

MnPtSi
###Complex magnetic phase diagram of metamagnetic MnPtSi|Monika B. Gamża,Walter Schnelle,Helge Rosner,Sarah V. Ackerbauer,Yuri Grin,Andreas Leithe-Jasper###
(1639781, 1639783)
Complex magnetic phase diagram of metamagnetic MnPtSi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 2, ',', 3]

MnPtSi
###Complex magnetic phase diagram of metamagnetic MnPtSi|Monika B. Gamża,Walter Schnelle,Helge Rosner,Sarah V. Ackerbauer,Yuri Grin,Andreas Leithe-Jasper###
(1639814, 1639816)
 The magnetic, thermal and transport properties as well as electronic bandstructure of MnPtSi are reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 2, ',', 2]

MnPtSi
###Complex magnetic phase diagram of metamagnetic MnPtSi|Monika B. Gamża,Walter Schnelle,Helge Rosner,Sarah V. Ackerbauer,Yuri Grin,Andreas Leithe-Jasper###
(1639823, 1639825)
 MnPtSi is a metal that undergoes aferromagnetic transition at T<missing VAR>mathrmC340(1) K and a spin-reorientationtransition at T<missing VAR>mathrmN326(1) K to an antiferromagnetic phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 2, ',', 1]

C340
###Complex magnetic phase diagram of metamagnetic MnPtSi|Monika B. Gamża,Walter Schnelle,Helge Rosner,Sarah V. Ackerbauer,Yuri Grin,Andreas Leithe-Jasper###
(1639848, 1639849)
 MnPtSi is a metal that undergoes aferromagnetic transition at T<missing VAR>mathrmC340(1) K and a spin-reorientationtransition at T<missing VAR>mathrmN326(1) K to an antiferromagnetic phase.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 2, ',', 1]

K
###Complex magnetic phase diagram of metamagnetic MnPtSi|Monika B. Gamża,Walter Schnelle,Helge Rosner,Sarah V. Ackerbauer,Yuri Grin,Andreas Leithe-Jasper###
(1639854, 1639854)
 MnPtSi is a metal that undergoes aferromagnetic transition at T<missing VAR>mathrmC340(1) K and a spin-reorientationtransition at T<missing VAR>mathrmN326(1) K to an antiferromagnetic phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 2, ',', 1]

N326
###Complex magnetic phase diagram of metamagnetic MnPtSi|Monika B. Gamża,Walter Schnelle,Helge Rosner,Sarah V. Ackerbauer,Yuri Grin,Andreas Leithe-Jasper###
(1639871, 1639872)
 MnPtSi is a metal that undergoes aferromagnetic transition at T<missing VAR>mathrmC340(1) K and a spin-reorientationtransition at T<missing VAR>mathrmN326(1) K to an antiferromagnetic phase.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 2, ',', 1]

K
###Complex magnetic phase diagram of metamagnetic MnPtSi|Monika B. Gamża,Walter Schnelle,Helge Rosner,Sarah V. Ackerbauer,Yuri Grin,Andreas Leithe-Jasper###
(1639877, 1639877)
 MnPtSi is a metal that undergoes aferromagnetic transition at T<missing VAR>mathrmC340(1) K and a spin-reorientationtransition at T<missing VAR>mathrmN326(1) K to an antiferromagnetic phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 2, ',', 1]

Mn
###Complex magnetic phase diagram of metamagnetic MnPtSi|Monika B. Gamża,Walter Schnelle,Helge Rosner,Sarah V. Ackerbauer,Yuri Grin,Andreas Leithe-Jasper###
(1639916, 1639916)
First-principles electronic structure calculations indicate a not-fullypolarized spin state of Mn in a d<missing VAR>5 electron configuration with J<missing VAR>S3/2, inagreement with the saturation magnetization of 3mumathrmB in theordered state and the observed paramagnetic effective moment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 2, ',', 0]

S3
###Complex magnetic phase diagram of metamagnetic MnPtSi|Monika B. Gamża,Walter Schnelle,Helge Rosner,Sarah V. Ackerbauer,Yuri Grin,Andreas Leithe-Jasper###
(1639932, 1639933)
First-principles electronic structure calculations indicate a not-fullypolarized spin state of Mn in a d<missing VAR>5 electron configuration with J<missing VAR>S3/2, inagreement with the saturation magnetization of 3mumathrmB in theordered state and the observed paramagnetic effective moment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 2, ',', 0]

B
###Complex magnetic phase diagram of metamagnetic MnPtSi|Monika B. Gamża,Walter Schnelle,Helge Rosner,Sarah V. Ackerbauer,Yuri Grin,Andreas Leithe-Jasper###
(1639956, 1639956)
First-principles electronic structure calculations indicate a not-fullypolarized spin state of Mn in a d<missing VAR>5 electron configuration with J<missing VAR>S3/2, inagreement with the saturation magnetization of 3mumathrmB in theordered state and the observed paramagnetic effective moment.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 2, ',', 0]

(H)
###Complex magnetic phase diagram of metamagnetic MnPtSi|Monika B. Gamża,Walter Schnelle,Helge Rosner,Sarah V. Ackerbauer,Yuri Grin,Andreas Leithe-Jasper###
(1640057, 1640059)
 Magnetization curves M<missing VAR>(H) at low temperaturesreveal a metamagnetic transition of spin-flop type.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 2, ',', 3]

K
###Complex magnetic phase diagram of metamagnetic MnPtSi|Monika B. Gamża,Walter Schnelle,Helge Rosner,Sarah V. Ackerbauer,Yuri Grin,Andreas Leithe-Jasper###
(1640113, 1640113)
 The spin-flopped phaseterminates at a critical point with T<missing VAR>mathrmcrapprox 300 K andHmathrmcrapprox 10 k<missing VAR>Oe, near which a peak of the magnetocaloricentropy change is observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 2, ',', 4]

H
###Complex magnetic phase diagram of metamagnetic MnPtSi|Monika B. Gamża,Walter Schnelle,Helge Rosner,Sarah V. Ackerbauer,Yuri Grin,Andreas Leithe-Jasper###
(1640118, 1640118)
 The spin-flopped phaseterminates at a critical point with T<missing VAR>mathrmcrapprox 300 K andHmathrmcrapprox 10 k<missing VAR>Oe, near which a peak of the magnetocaloricentropy change is observed.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[183.0, 2, ',', 4]

N
###Complex magnetic phase diagram of metamagnetic MnPtSi|Monika B. Gamża,Walter Schnelle,Helge Rosner,Sarah V. Ackerbauer,Yuri Grin,Andreas Leithe-Jasper###
(1640208, 1640208)
 Using Arrott plot analysis and magnetoresistivitydata we argue that the metamagnetic transition is of a first-order type,whereas the strong field dependence of T<missing VAR>mathrmN and the linearrelationship of the T<missing VAR>mathrmN with M<missing VAR>2 hint at its magnetoelasticnature.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[273.0, 2, ',', 5]

N
###Complex magnetic phase diagram of metamagnetic MnPtSi|Monika B. Gamża,Walter Schnelle,Helge Rosner,Sarah V. Ackerbauer,Yuri Grin,Andreas Leithe-Jasper###
(1640225, 1640225)
 Using Arrott plot analysis and magnetoresistivitydata we argue that the metamagnetic transition is of a first-order type,whereas the strong field dependence of T<missing VAR>mathrmN and the linearrelationship of the T<missing VAR>mathrmN with M<missing VAR>2 hint at its magnetoelasticnature.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[290.0, 2, ',', 5]

Nd1-xLa
###Crossover from charge density wave stabilized antiferromagnetism to superconductivity in Nd$_{1-x}$La$_x$NiC$_2$ compounds|Marta Roman,Leszek Litzbarski,Tomasz Klimczuk,Kamil K. Kolincio###
(1640272, 1640276)
Crossover from charge density wave stabilized antiferromagnetism to superconductivity in Nd1-xLax<missing VAR>NiC2 compounds.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

NiC2
###Crossover from charge density wave stabilized antiferromagnetism to superconductivity in Nd$_{1-x}$La$_x$NiC$_2$ compounds|Marta Roman,Leszek Litzbarski,Tomasz Klimczuk,Kamil K. Kolincio###
(1640278, 1640280)
Crossover from charge density wave stabilized antiferromagnetism to superconductivity in Nd1-xLax<missing VAR>NiC2 compounds.
Featurization terminated normally.
0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NdNiC2
###Crossover from charge density wave stabilized antiferromagnetism to superconductivity in Nd$_{1-x}$La$_x$NiC$_2$ compounds|Marta Roman,Leszek Litzbarski,Tomasz Klimczuk,Kamil K. Kolincio###
(1640301, 1640304)
 The path from the charge density wave antiferromagnet NdNiC2 to anoncentrosymmetric superconductor LaNiC2 has been studied by gradualreplacement of Nd by La ions.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaNiC2
###Crossover from charge density wave stabilized antiferromagnetism to superconductivity in Nd$_{1-x}$La$_x$NiC$_2$ compounds|Marta Roman,Leszek Litzbarski,Tomasz Klimczuk,Kamil K. Kolincio###
(1640315, 1640318)
 The path from the charge density wave antiferromagnet NdNiC2 to anoncentrosymmetric superconductor LaNiC2 has been studied by gradualreplacement of Nd by La ions.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nd
###Crossover from charge density wave stabilized antiferromagnetism to superconductivity in Nd$_{1-x}$La$_x$NiC$_2$ compounds|Marta Roman,Leszek Litzbarski,Tomasz Klimczuk,Kamil K. Kolincio###
(1640335, 1640335)
 The path from the charge density wave antiferromagnet NdNiC2 to anoncentrosymmetric superconductor LaNiC2 has been studied by gradualreplacement of Nd by La ions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La
###Crossover from charge density wave stabilized antiferromagnetism to superconductivity in Nd$_{1-x}$La$_x$NiC$_2$ compounds|Marta Roman,Leszek Litzbarski,Tomasz Klimczuk,Kamil K. Kolincio###
(1640339, 1640339)
 The path from the charge density wave antiferromagnet NdNiC2 to anoncentrosymmetric superconductor LaNiC2 has been studied by gradualreplacement of Nd by La ions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La
###Crossover from charge density wave stabilized antiferromagnetism to superconductivity in Nd$_{1-x}$La$_x$NiC$_2$ compounds|Marta Roman,Leszek Litzbarski,Tomasz Klimczuk,Kamil K. Kolincio###
(1640392, 1640392)
 With the substitution of La for Nd, the Peierls temperatureis gradually suppressed, which falls within the BCS mean-field relation forchemical pressure with a critical concentration of xc  0.38.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nd
###Crossover from charge density wave stabilized antiferromagnetism to superconductivity in Nd$_{1-x}$La$_x$NiC$_2$ compounds|Marta Roman,Leszek Litzbarski,Tomasz Klimczuk,Kamil K. Kolincio###
(1640396, 1640396)
 With the substitution of La for Nd, the Peierls temperatureis gradually suppressed, which falls within the BCS mean-field relation forchemical pressure with a critical concentration of xc  0.38.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BCS
###Crossover from charge density wave stabilized antiferromagnetism to superconductivity in Nd$_{1-x}$La$_x$NiC$_2$ compounds|Marta Roman,Leszek Litzbarski,Tomasz Klimczuk,Kamil K. Kolincio###
(1640421, 1640423)
 With the substitution of La for Nd, the Peierls temperatureis gradually suppressed, which falls within the BCS mean-field relation forchemical pressure with a critical concentration of xc  0.38.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Crossover from charge density wave stabilized antiferromagnetism to superconductivity in Nd$_{1-x}$La$_x$NiC$_2$ compounds|Marta Roman,Leszek Litzbarski,Tomasz Klimczuk,Kamil K. Kolincio###
(1640455, 1640455)
 As long ascharge density wave is maintained, the antiferromagnetic ground state remainsrobust against doping and despite of a Neel temperature reduction shows arapid and sharp magnetic transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Crossover from charge density wave stabilized antiferromagnetism to superconductivity in Nd$_{1-x}$La$_x$NiC$_2$ compounds|Marta Roman,Leszek Litzbarski,Tomasz Klimczuk,Kamil K. Kolincio###
(1640498, 1640498)
 As long ascharge density wave is maintained, the antiferromagnetic ground state remainsrobust against doping and despite of a Neel temperature reduction shows arapid and sharp magnetic transition.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Crossover from charge density wave stabilized antiferromagnetism to superconductivity in Nd$_{1-x}$La$_x$NiC$_2$ compounds|Marta Roman,Leszek Litzbarski,Tomasz Klimczuk,Kamil K. Kolincio###
(1640525, 1640525)
 Once the CD<missing VAR>W is completely suppressed,intermediate compounds of the Nd1-xLax<missing VAR>NiC2 series reveal symptoms ofa gradual softening of the features associated with AFM<missing VAR> transition and increaseof the spin disorder.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Crossover from charge density wave stabilized antiferromagnetism to superconductivity in Nd$_{1-x}$La$_x$NiC$_2$ compounds|Marta Roman,Leszek Litzbarski,Tomasz Klimczuk,Kamil K. Kolincio###
(1640527, 1640527)
 Once the CD<missing VAR>W is completely suppressed,intermediate compounds of the Nd1-xLax<missing VAR>NiC2 series reveal symptoms ofa gradual softening of the features associated with AFM<missing VAR> transition and increaseof the spin disorder.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nd1-xLa
###Crossover from charge density wave stabilized antiferromagnetism to superconductivity in Nd$_{1-x}$La$_x$NiC$_2$ compounds|Marta Roman,Leszek Litzbarski,Tomasz Klimczuk,Kamil K. Kolincio###
(1640545, 1640549)
 Once the CD<missing VAR>W is completely suppressed,intermediate compounds of the Nd1-xLax<missing VAR>NiC2 series reveal symptoms ofa gradual softening of the features associated with AFM<missing VAR> transition and increaseof the spin disorder.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

NiC2
###Crossover from charge density wave stabilized antiferromagnetism to superconductivity in Nd$_{1-x}$La$_x$NiC$_2$ compounds|Marta Roman,Leszek Litzbarski,Tomasz Klimczuk,Kamil K. Kolincio###
(1640551, 1640553)
 Once the CD<missing VAR>W is completely suppressed,intermediate compounds of the Nd1-xLax<missing VAR>NiC2 series reveal symptoms ofa gradual softening of the features associated with AFM<missing VAR> transition and increaseof the spin disorder.
Featurization terminated normally.
0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Crossover from charge density wave stabilized antiferromagnetism to superconductivity in Nd$_{1-x}$La$_x$NiC$_2$ compounds|Marta Roman,Leszek Litzbarski,Tomasz Klimczuk,Kamil K. Kolincio###
(1640581, 1640581)
 Once the CD<missing VAR>W is completely suppressed,intermediate compounds of the Nd1-xLax<missing VAR>NiC2 series reveal symptoms ofa gradual softening of the features associated with AFM<missing VAR> transition and increaseof the spin disorder.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La
###Crossover from charge density wave stabilized antiferromagnetism to superconductivity in Nd$_{1-x}$La$_x$NiC$_2$ compounds|Marta Roman,Leszek Litzbarski,Tomasz Klimczuk,Kamil K. Kolincio###
(1640630, 1640630)
 Immediately after the antiferromagnetic transition isdepressed to zero temperature, the further incorporation of La ions results inthe emergence of superconductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nd1-xLa
###Crossover from charge density wave stabilized antiferromagnetism to superconductivity in Nd$_{1-x}$La$_x$NiC$_2$ compounds|Marta Roman,Leszek Litzbarski,Tomasz Klimczuk,Kamil K. Kolincio###
(1640657, 1640661)
 This crossover in theNd1-xLax<missing VAR>NiC2 is discussed in the terms of the possible quantumcritical point.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

NiC2
###Crossover from charge density wave stabilized antiferromagnetism to superconductivity in Nd$_{1-x}$La$_x$NiC$_2$ compounds|Marta Roman,Leszek Litzbarski,Tomasz Klimczuk,Kamil K. Kolincio###
(1640663, 1640665)
 This crossover in theNd1-xLax<missing VAR>NiC2 is discussed in the terms of the possible quantumcritical point.
Featurization terminated normally.
0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co3Sn2S2
###Temperature-induced band shift in ferromagnetic Weyl semimetal Co3Sn2S2|Run Yang,Tan Zhang,Liqin Zhou,Yaomin Dai,Zhiyu Liao,Hongming Weng,Xianggang Qiu###
(1640715, 1640720)
Temperature-induced band shift in ferromagnetic Weyl semimetal Co3Sn2S2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[269.0, 1.33, ',', 5]

WS
###Temperature-induced band shift in ferromagnetic Weyl semimetal Co3Sn2S2|Run Yang,Tan Zhang,Liqin Zhou,Yaomin Dai,Zhiyu Liao,Hongming Weng,Xianggang Qiu###
(1640736, 1640737)
 The discovery of nonmagnetic Weyl semimetals (WSMs) in TaAs compounds hastriggered lots of efforts in finding its magnetic counterpart.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[252.0, 1.33, ',', 4]

TaAs
###Temperature-induced band shift in ferromagnetic Weyl semimetal Co3Sn2S2|Run Yang,Tan Zhang,Liqin Zhou,Yaomin Dai,Zhiyu Liao,Hongming Weng,Xianggang Qiu###
(1640743, 1640744)
 The discovery of nonmagnetic Weyl semimetals (WSMs) in TaAs compounds hastriggered lots of efforts in finding its magnetic counterpart.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[245.0, 1.33, ',', 4]

WS
###Temperature-induced band shift in ferromagnetic Weyl semimetal Co3Sn2S2|Run Yang,Tan Zhang,Liqin Zhou,Yaomin Dai,Zhiyu Liao,Hongming Weng,Xianggang Qiu###
(1640838, 1640839)
 The transport features of magnetic WSMs, including negativemagnetoresistivity and anomalous Hall conductivity, are not conclusive sincethese are sensitive to extrinsic factors like defects and disorders in latticeor magnetic ordering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 1.33, ',', 2]

Co3Sn2S2
###Temperature-induced band shift in ferromagnetic Weyl semimetal Co3Sn2S2|Run Yang,Tan Zhang,Liqin Zhou,Yaomin Dai,Zhiyu Liao,Hongming Weng,Xianggang Qiu###
(1640924, 1640929)
 Here, we systematically study the temperature-dependentoptical spectra of ferromagnetic Co3Sn2S2 experimentally and simulatedby first-principles calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 1.33, ',', 1]

Co
###Temperature-induced band shift in ferromagnetic Weyl semimetal Co3Sn2S2|Run Yang,Tan Zhang,Liqin Zhou,Yaomin Dai,Zhiyu Liao,Hongming Weng,Xianggang Qiu###
(1640961, 1640961)
 The many-body correlation effect due to Co3d<missing VAR> electrons leads to the renormalization of bands by a factor about 1.33,which is moderate and the description within density functional theory issuitable.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 1.33, ',', 0]

As
###Temperature-induced band shift in ferromagnetic Weyl semimetal Co3Sn2S2|Run Yang,Tan Zhang,Liqin Zhou,Yaomin Dai,Zhiyu Liao,Hongming Weng,Xianggang Qiu###
(1641019, 1641019)
 As the temperature drops down, the magnetic phase transition happensand the magnetization drives the band shift through exchange splitting.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 1.33, ',', 1]

Co3Sn2S2
###Temperature-induced band shift in ferromagnetic Weyl semimetal Co3Sn2S2|Run Yang,Tan Zhang,Liqin Zhou,Yaomin Dai,Zhiyu Liao,Hongming Weng,Xianggang Qiu###
(1641130, 1641135)
 The results strongly support that Co3Sn2S2 is amagnetic WSM<missing VAR> and the Weyl nodes can be tuned by magnetization with temperaturechange.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 1.33, ',', 3]

WS
###Temperature-induced band shift in ferromagnetic Weyl semimetal Co3Sn2S2|Run Yang,Tan Zhang,Liqin Zhou,Yaomin Dai,Zhiyu Liao,Hongming Weng,Xianggang Qiu###
(1641144, 1641145)
 The results strongly support that Co3Sn2S2 is amagnetic WSM<missing VAR> and the Weyl nodes can be tuned by magnetization with temperaturechange.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 1.33, ',', 3]

S
###Implementing Binarized Neural Networks with Magnetoresistive RAM without Error Correction|Tifenn Hirtzlin,Bogdan Penkovsky,Jacques-Olivier Klein,Nicolas Locatelli,Adrien F. Vincent,Marc Bocquet,Jean-Michel Portal,Damien Querlioz###
(1641233, 1641233)
 One of the most exciting applications of Spin Torque Magnetoresistive RandomAccess Memory (ST-MRAM) is the in-memory implementation of deep neuralnetworks, which could allow improving the energy efficiency of ArtificialIntelligence by orders of magnitude with regards to its implementation oncomputers and graphics cards.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 2016, ',', 1],[333.0, 0.1, '%', 3]

In
###Implementing Binarized Neural Networks with Magnetoresistive RAM without Error Correction|Tifenn Hirtzlin,Bogdan Penkovsky,Jacques-Olivier Klein,Nicolas Locatelli,Adrien F. Vincent,Marc Bocquet,Jean-Michel Portal,Damien Querlioz###
(1641313, 1641313)
 In particular, ST-MRAM<missing VAR> could be ideal forimplementing Binarized Neural Networks (BNNs), a type of deep neural networksdiscovered in 2016, which can achieve state-of-the-art performance with ahighly reduced memory footprint with regards to conventional artificialintelligence approaches.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 2016, ',', 0],[253.0, 0.1, '%', 2]

S
###Implementing Binarized Neural Networks with Magnetoresistive RAM without Error Correction|Tifenn Hirtzlin,Bogdan Penkovsky,Jacques-Olivier Klein,Nicolas Locatelli,Adrien F. Vincent,Marc Bocquet,Jean-Michel Portal,Damien Querlioz###
(1641318, 1641318)
 In particular, ST-MRAM<missing VAR> could be ideal forimplementing Binarized Neural Networks (BNNs), a type of deep neural networksdiscovered in 2016, which can achieve state-of-the-art performance with ahighly reduced memory footprint with regards to conventional artificialintelligence approaches.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 2016, ',', 0],[248.0, 0.1, '%', 2]

BN
###Implementing Binarized Neural Networks with Magnetoresistive RAM without Error Correction|Tifenn Hirtzlin,Bogdan Penkovsky,Jacques-Olivier Klein,Nicolas Locatelli,Adrien F. Vincent,Marc Bocquet,Jean-Michel Portal,Damien Querlioz###
(1641344, 1641345)
 In particular, ST-MRAM<missing VAR> could be ideal forimplementing Binarized Neural Networks (BNNs), a type of deep neural networksdiscovered in 2016, which can achieve state-of-the-art performance with ahighly reduced memory footprint with regards to conventional artificialintelligence approaches.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 2016, ',', 0],[221.0, 0.1, '%', 2]

S
###Implementing Binarized Neural Networks with Magnetoresistive RAM without Error Correction|Tifenn Hirtzlin,Bogdan Penkovsky,Jacques-Olivier Klein,Nicolas Locatelli,Adrien F. Vincent,Marc Bocquet,Jean-Michel Portal,Damien Querlioz###
(1641421, 1641421)
 The challenge of ST-MRAM<missing VAR>, however, is that it is proneto write errors and usually requires the use of error correction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 2016, ',', 1],[145.0, 0.1, '%', 1]

In
###Implementing Binarized Neural Networks with Magnetoresistive RAM without Error Correction|Tifenn Hirtzlin,Bogdan Penkovsky,Jacques-Olivier Klein,Nicolas Locatelli,Adrien F. Vincent,Marc Bocquet,Jean-Michel Portal,Damien Querlioz###
(1641467, 1641467)
 In this work,we show that these bit errors can be tolerated by BNNs to an outstanding level,based on examples of image recognition tasks (M<missing VAR>NIST<missing VAR>, CIFAR<missing VAR>-10 and ImageNet)bit error rates of ST-MRAM<missing VAR> up to 0.1% have little impact on recognitionaccuracy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 2016, ',', 2],[99.0, 0.1, '%', 0]

BN
###Implementing Binarized Neural Networks with Magnetoresistive RAM without Error Correction|Tifenn Hirtzlin,Bogdan Penkovsky,Jacques-Olivier Klein,Nicolas Locatelli,Adrien F. Vincent,Marc Bocquet,Jean-Michel Portal,Damien Querlioz###
(1641495, 1641496)
 In this work,we show that these bit errors can be tolerated by BNNs to an outstanding level,based on examples of image recognition tasks (M<missing VAR>NIST<missing VAR>, CIFAR<missing VAR>-10 and ImageNet)bit error rates of ST-MRAM<missing VAR> up to 0.1% have little impact on recognitionaccuracy.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 2016, ',', 2],[70.0, 0.1, '%', 0]

NIS
###Implementing Binarized Neural Networks with Magnetoresistive RAM without Error Correction|Tifenn Hirtzlin,Bogdan Penkovsky,Jacques-Olivier Klein,Nicolas Locatelli,Adrien F. Vincent,Marc Bocquet,Jean-Michel Portal,Damien Querlioz###
(1641525, 1641527)
 In this work,we show that these bit errors can be tolerated by BNNs to an outstanding level,based on examples of image recognition tasks (M<missing VAR>NIST<missing VAR>, CIFAR<missing VAR>-10 and ImageNet)bit error rates of ST-MRAM<missing VAR> up to 0.1% have little impact on recognitionaccuracy.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 2016, ',', 2],[39.0, 0.1, '%', 0]

CIF
###Implementing Binarized Neural Networks with Magnetoresistive RAM without Error Correction|Tifenn Hirtzlin,Bogdan Penkovsky,Jacques-Olivier Klein,Nicolas Locatelli,Adrien F. Vincent,Marc Bocquet,Jean-Michel Portal,Damien Querlioz###
(1641531, 1641533)
 In this work,we show that these bit errors can be tolerated by BNNs to an outstanding level,based on examples of image recognition tasks (M<missing VAR>NIST<missing VAR>, CIFAR<missing VAR>-10 and ImageNet)bit error rates of ST-MRAM<missing VAR> up to 0.1% have little impact on recognitionaccuracy.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 2016, ',', 2],[33.0, 0.1, '%', 0]

S
###Implementing Binarized Neural Networks with Magnetoresistive RAM without Error Correction|Tifenn Hirtzlin,Bogdan Penkovsky,Jacques-Olivier Klein,Nicolas Locatelli,Adrien F. Vincent,Marc Bocquet,Jean-Michel Portal,Damien Querlioz###
(1641554, 1641554)
 In this work,we show that these bit errors can be tolerated by BNNs to an outstanding level,based on examples of image recognition tasks (M<missing VAR>NIST<missing VAR>, CIFAR<missing VAR>-10 and ImageNet)bit error rates of ST-MRAM<missing VAR> up to 0.1% have little impact on recognitionaccuracy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[187.0, 2016, ',', 2],[12.0, 0.1, '%', 0]

S
###Implementing Binarized Neural Networks with Magnetoresistive RAM without Error Correction|Tifenn Hirtzlin,Bogdan Penkovsky,Jacques-Olivier Klein,Nicolas Locatelli,Adrien F. Vincent,Marc Bocquet,Jean-Michel Portal,Damien Querlioz###
(1641589, 1641589)
 The requirements for ST-MRAM<missing VAR> are therefore considerably relaxed forBNNs with regards to traditional applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[222.0, 2016, ',', 3],[23.0, 0.1, '%', 1]

BN
###Implementing Binarized Neural Networks with Magnetoresistive RAM without Error Correction|Tifenn Hirtzlin,Bogdan Penkovsky,Jacques-Olivier Klein,Nicolas Locatelli,Adrien F. Vincent,Marc Bocquet,Jean-Michel Portal,Damien Querlioz###
(1641608, 1641609)
 The requirements for ST-MRAM<missing VAR> are therefore considerably relaxed forBNNs with regards to traditional applications.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[241.0, 2016, ',', 3],[42.0, 0.1, '%', 1]

BN
###Implementing Binarized Neural Networks with Magnetoresistive RAM without Error Correction|Tifenn Hirtzlin,Bogdan Penkovsky,Jacques-Olivier Klein,Nicolas Locatelli,Adrien F. Vincent,Marc Bocquet,Jean-Michel Portal,Damien Querlioz###
(1641637, 1641638)
 By consequence, we show that forBNNs, ST-MRAMs can be programmed with weak (low-energy) programming conditions,without error correcting codes.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[270.0, 2016, ',', 4],[71.0, 0.1, '%', 2]

S
###Implementing Binarized Neural Networks with Magnetoresistive RAM without Error Correction|Tifenn Hirtzlin,Bogdan Penkovsky,Jacques-Olivier Klein,Nicolas Locatelli,Adrien F. Vincent,Marc Bocquet,Jean-Michel Portal,Damien Querlioz###
(1641642, 1641642)
 By consequence, we show that forBNNs, ST-MRAMs can be programmed with weak (low-energy) programming conditions,without error correcting codes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[275.0, 2016, ',', 4],[76.0, 0.1, '%', 2]

S
###Implementing Binarized Neural Networks with Magnetoresistive RAM without Error Correction|Tifenn Hirtzlin,Bogdan Penkovsky,Jacques-Olivier Klein,Nicolas Locatelli,Adrien F. Vincent,Marc Bocquet,Jean-Michel Portal,Damien Querlioz###
(1641712, 1641712)
 We show that this result can allow the use oflow energy and low area ST-MRAM<missing VAR> cells, and show that the energy savings at thesystem level can reach a factor two.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[345.0, 2016, ',', 5],[146.0, 0.1, '%', 3]

S
###Band-pass Magnetic Tunnel Junction based Magnetoresistive Random Access Memory|Abhishek Sharma,Ashwin Tulapurkar,Bhaskaran Muralidharan###
(1641805, 1641805)
 We propose spin transfer torque--magnetoresistive random access memory(STT-MRAM) based on magneto-resistance and spin transfer torque physics ofband-pass spin filtering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[304.0, 1100, '%', 4]

S
###Band-pass Magnetic Tunnel Junction based Magnetoresistive Random Access Memory|Abhishek Sharma,Ashwin Tulapurkar,Bhaskaran Muralidharan###
(1641894, 1641894)
 Utilizing the electronic analogs of optical phenomenasuch as anti-reflection coating and resonance for spintronic devices, wepresent the design of an STT-MRAM<missing VAR> device with improved features when comparedwith a traditional trilayer device.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[215.0, 1100, '%', 3]

S
###Band-pass Magnetic Tunnel Junction based Magnetoresistive Random Access Memory|Abhishek Sharma,Ashwin Tulapurkar,Bhaskaran Muralidharan###
(1642025, 1642025)
 Employing the Greens<missing VAR> function spintransport formalism coupled self-consistently with the stochasticLandau-Lifshitz-Gilbert-Slonczewski equation, we present the design of anSTT-MRAM<missing VAR> based on the band-pass filtering having an ultra-high TMR (3.510e<missing VAR>4)and large spin current.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 1100, '%', 1]

S
###Band-pass Magnetic Tunnel Junction based Magnetoresistive Random Access Memory|Abhishek Sharma,Ashwin Tulapurkar,Bhaskaran Muralidharan###
(1642083, 1642083)
 We demonstrate that the STT-MRAM<missing VAR> design havingband-pass spin filtering are nearly 1100% more energy efficient thantraditional trilayer magnetic tunnel junction (MTJ) based STT-MRAM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 1100, '%', 0]

S
###Band-pass Magnetic Tunnel Junction based Magnetoresistive Random Access Memory|Abhishek Sharma,Ashwin Tulapurkar,Bhaskaran Muralidharan###
(1642139, 1642139)
 We demonstrate that the STT-MRAM<missing VAR> design havingband-pass spin filtering are nearly 1100% more energy efficient thantraditional trilayer magnetic tunnel junction (MTJ) based STT-MRAM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 1100, '%', 0]

S
###Band-pass Magnetic Tunnel Junction based Magnetoresistive Random Access Memory|Abhishek Sharma,Ashwin Tulapurkar,Bhaskaran Muralidharan###
(1642189, 1642189)
 We alsopresent detailed probabilistic switching and energy analysis for a trilayer MTJand band-pass filtering based STT-MRAM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 1100, '%', 1]

CrI3
###Low-temperature monoclinic layer stacking in atomically thin CrI$_3$ crystals|Nicolas Ubrig,Zhe Wang,Jérémie Teyssier,Takashi Taniguchi,Kenji Watanabe,Enrico Giannini,Alberto F. Morpurgo,Marco Gibertini###
(1642258, 1642260)
Low-temperature monoclinic layer stacking in atomically thin CrI3 crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CrI3
###Low-temperature monoclinic layer stacking in atomically thin CrI$_3$ crystals|Nicolas Ubrig,Zhe Wang,Jérémie Teyssier,Takashi Taniguchi,Kenji Watanabe,Enrico Giannini,Alberto F. Morpurgo,Marco Gibertini###
(1642270, 1642272)
 Chromium triiodide, CrI3, is emerging as a promising magnetictwo-dimensional semiconductor where spins are ferromagnetically aligned withina single layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Low-temperature monoclinic layer stacking in atomically thin CrI$_3$ crystals|Nicolas Ubrig,Zhe Wang,Jérémie Teyssier,Takashi Taniguchi,Kenji Watanabe,Enrico Giannini,Alberto F. Morpurgo,Marco Gibertini###
(1642544, 1642544)
 As a consequence, a different stacking pattern is present in thin andbulk samples at the temperatures at which magnetism sets in and, according toprevious first-principles simulations, this results in a different interlayermagnetic ordering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CrI3
###Low-temperature monoclinic layer stacking in atomically thin CrI$_3$ crystals|Nicolas Ubrig,Zhe Wang,Jérémie Teyssier,Takashi Taniguchi,Kenji Watanabe,Enrico Giannini,Alberto F. Morpurgo,Marco Gibertini###
(1642656, 1642658)
 Our experimental findings provide evidence for the stronginterplay between stacking order and magnetism in CrI3, opening interestingperspectives to design the magnetic state of van der Waals multilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pb1-x
###Large surface conductance and two-dimensional superconductivity in microstructured crystalline topological insulators|Yangmu Li,Jie Wu,Fernando Camino,G. D. Gu,Ivan Božović,John M. Tranquada###
(1642805, 1642808)
 Here we presentmicrodevices fabricated with focused ion beam from indium-doped topologicalinsulator Pb1-xSnxTe.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[61.0, 30, '%', 1],[107.0, 180, 'K', 2],[113.0, 30, 'K', 2],[169.0, 6, 'K', 3]

Te
###Large surface conductance and two-dimensional superconductivity in microstructured crystalline topological insulators|Yangmu Li,Jie Wu,Fernando Camino,G. D. Gu,Ivan Božović,John M. Tranquada###
(1642810, 1642810)
 Here we presentmicrodevices fabricated with focused ion beam from indium-doped topologicalinsulator Pb1-xSnxTe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 30, '%', 1],[105.0, 180, 'K', 2],[111.0, 30, 'K', 2],[167.0, 6, 'K', 3]

In
###Large surface conductance and two-dimensional superconductivity in microstructured crystalline topological insulators|Yangmu Li,Jie Wu,Fernando Camino,G. D. Gu,Ivan Božović,John M. Tranquada###
(1642933, 1642933)
 In addition to the enhanced surface contribution to normal-statetransport, we observe the emergence of a two-dimensional superconductivitybelow 6 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 30, '%', 2],[18.0, 180, 'K', 1],[12.0, 30, 'K', 1],[44.0, 6, 'K', 0]

Tl2NiMnO6
###Colossal magnetoresistance in the insulating ferromagnetic double perovskites Tl$_2$NiMnO$_6$: A neutron diffraction study|Lei Ding,Dmitry D. Khalyavin,Pascal Manuel,Joseph Blake,Fabio Orlandi,Wei Yi,Alexei A. Belik###
(1643119, 1643124)
Colossal magnetoresistance in the insulating ferromagnetic double perovskites Tl2NiMnO6 A neutron diffraction study.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[247.0, 70, '%', 4],[349.0, 31, '%', 5]

In
###Colossal magnetoresistance in the insulating ferromagnetic double perovskites Tl$_2$NiMnO$_6$: A neutron diffraction study|Lei Ding,Dmitry D. Khalyavin,Pascal Manuel,Joseph Blake,Fabio Orlandi,Wei Yi,Alexei A. Belik###
(1643135, 1643135)
 In the family of double perovskites, colossal magnetoresistance (CMR) hasbeen so far observed only in half-metallic ferrimagnets such as the known caseSr2FeMoO6 where it has been assigned to the tunneling MR at grainboundaries due to the half-metallic nature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[236.0, 70, '%', 3],[338.0, 31, '%', 4]

C
###Colossal magnetoresistance in the insulating ferromagnetic double perovskites Tl$_2$NiMnO$_6$: A neutron diffraction study|Lei Ding,Dmitry D. Khalyavin,Pascal Manuel,Joseph Blake,Fabio Orlandi,Wei Yi,Alexei A. Belik###
(1643153, 1643153)
 In the family of double perovskites, colossal magnetoresistance (CMR) hasbeen so far observed only in half-metallic ferrimagnets such as the known caseSr2FeMoO6 where it has been assigned to the tunneling MR at grainboundaries due to the half-metallic nature.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[218.0, 70, '%', 3],[320.0, 31, '%', 4]

Sr2FeMoO6
###Colossal magnetoresistance in the insulating ferromagnetic double perovskites Tl$_2$NiMnO$_6$: A neutron diffraction study|Lei Ding,Dmitry D. Khalyavin,Pascal Manuel,Joseph Blake,Fabio Orlandi,Wei Yi,Alexei A. Belik###
(1643190, 1643195)
 In the family of double perovskites, colossal magnetoresistance (CMR) hasbeen so far observed only in half-metallic ferrimagnets such as the known caseSr2FeMoO6 where it has been assigned to the tunneling MR at grainboundaries due to the half-metallic nature.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[176.0, 70, '%', 3],[278.0, 31, '%', 4]

Tl2NiMnO6
###Colossal magnetoresistance in the insulating ferromagnetic double perovskites Tl$_2$NiMnO$_6$: A neutron diffraction study|Lei Ding,Dmitry D. Khalyavin,Pascal Manuel,Joseph Blake,Fabio Orlandi,Wei Yi,Alexei A. Belik###
(1643249, 1643254)
 Here we report a newmaterial-Tl2NiMnO6, a relatively ordered double perovskite stablized bythe high pressure and high temperature synthesis-showing CMR in the vicinity ofits Curie temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 70, '%', 2],[219.0, 31, '%', 3]

C
###Colossal magnetoresistance in the insulating ferromagnetic double perovskites Tl$_2$NiMnO$_6$: A neutron diffraction study|Lei Ding,Dmitry D. Khalyavin,Pascal Manuel,Joseph Blake,Fabio Orlandi,Wei Yi,Alexei A. Belik###
(1643288, 1643288)
 Here we report a newmaterial-Tl2NiMnO6, a relatively ordered double perovskite stablized bythe high pressure and high temperature synthesis-showing CMR in the vicinity ofits Curie temperature.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 70, '%', 2],[185.0, 31, '%', 3]

Tl2NiMnO6
###Colossal magnetoresistance in the insulating ferromagnetic double perovskites Tl$_2$NiMnO$_6$: A neutron diffraction study|Lei Ding,Dmitry D. Khalyavin,Pascal Manuel,Joseph Blake,Fabio Orlandi,Wei Yi,Alexei A. Belik###
(1643363, 1643368)
 Hence the ordered Tl2NiMnO6 (70%of Ni2/Mn4 cation ordering) represents the first realization of aferromagnetic insulating double perovskite, showing CMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 70, '%', 0],[105.0, 31, '%', 1]

Ni2/Mn4
###Colossal magnetoresistance in the insulating ferromagnetic double perovskites Tl$_2$NiMnO$_6$: A neutron diffraction study|Lei Ding,Dmitry D. Khalyavin,Pascal Manuel,Joseph Blake,Fabio Orlandi,Wei Yi,Alexei A. Belik###
(1643377, 1643381)
 Hence the ordered Tl2NiMnO6 (70%of Ni2/Mn4 cation ordering) represents the first realization of aferromagnetic insulating double perovskite, showing CMR.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[6.0, 70, '%', 0],[92.0, 31, '%', 1]

C
###Colossal magnetoresistance in the insulating ferromagnetic double perovskites Tl$_2$NiMnO$_6$: A neutron diffraction study|Lei Ding,Dmitry D. Khalyavin,Pascal Manuel,Joseph Blake,Fabio Orlandi,Wei Yi,Alexei A. Belik###
(1643412, 1643412)
 Hence the ordered Tl2NiMnO6 (70%of Ni2/Mn4 cation ordering) represents the first realization of aferromagnetic insulating double perovskite, showing CMR.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 70, '%', 0],[61.0, 31, '%', 1]

Tl2NiMnO6
###Colossal magnetoresistance in the insulating ferromagnetic double perovskites Tl$_2$NiMnO$_6$: A neutron diffraction study|Lei Ding,Dmitry D. Khalyavin,Pascal Manuel,Joseph Blake,Fabio Orlandi,Wei Yi,Alexei A. Belik###
(1643465, 1643470)
 The study of therelationship between structure and magnetic properties allows us to clarify thenature of spin glass behaviour in the disordered Tl2NiMnO6 (31% ofcation ordering), which is related to the clustering of antisite defects andassociated with the short-range spin correlations.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 70, '%', 1],[3.0, 31, '%', 0]

CoFeB/MgO
###A Low Temperature Functioning CoFeB/MgO Based Perpendicular Magnetic Tunnel Junction for Cryogenic Nonvolatile Random Access Memory|Lili Lang,Yujie Jiang,Fei Lu,Cailu Wang,Yizhang Chen,Andrew D. Kent,Li Ye###
(1643603, 1643608)
A Low Temperature Functioning CoFeB/MgO Based Perpendicular Magnetic Tunnel Junction for Cryogenic Nonvolatile Random Access Memory.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[100.0, 9, 'K', 1],[118.0, 120, '%', 2],[144.0, 2, 'to', 2],[145.0, 200, 'ns', 2],[164.0, 9, 'K', 3],[171.0, 300, 'K', 3],[210.0, 10, 'ns', 3],[226.0, 9, 'K', 4],[239.0, 33, '%', 4],[244.0, 93, '%', 4],[265.0, 350, 'K', 4]

CoFeB/MgO
###A Low Temperature Functioning CoFeB/MgO Based Perpendicular Magnetic Tunnel Junction for Cryogenic Nonvolatile Random Access Memory|Lili Lang,Yujie Jiang,Fei Lu,Cailu Wang,Yizhang Chen,Andrew D. Kent,Li Ye###
(1643647, 1643652)
 We investigated the low temperature performance of CoFeB/MgO basedperpendicular magnetic tunnel junctions (pMTJs) by characterizing theirquasi-static switching voltage, high speed pulse write error rate and endurancedown to 9 K.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[56.0, 9, 'K', 0],[74.0, 120, '%', 1],[100.0, 2, 'to', 1],[101.0, 200, 'ns', 1],[120.0, 9, 'K', 2],[127.0, 300, 'K', 2],[166.0, 10, 'ns', 2],[182.0, 9, 'K', 3],[195.0, 33, '%', 3],[200.0, 93, '%', 3],[221.0, 350, 'K', 3]

CoFeB/MgO
###A Low Temperature Functioning CoFeB/MgO Based Perpendicular Magnetic Tunnel Junction for Cryogenic Nonvolatile Random Access Memory|Lili Lang,Yujie Jiang,Fei Lu,Cailu Wang,Yizhang Chen,Andrew D. Kent,Li Ye###
(1643957, 1643962)
 Our work demonstrates that CoFeB/MgObased pMTJs have great potential to enable cryogenic MRAM<missing VAR> and that their lowtemperature magnetization and effective magnetic anisotropy can be furtheroptimized to lower operating power and improve endurance.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[249.0, 9, 'K', 5],[231.0, 120, '%', 4],[205.0, 2, 'to', 4],[204.0, 200, 'ns', 4],[185.0, 9, 'K', 3],[178.0, 300, 'K', 3],[139.0, 10, 'ns', 3],[123.0, 9, 'K', 2],[110.0, 33, '%', 2],[105.0, 93, '%', 2],[84.0, 350, 'K', 2]

SrRu1-xGa
###Site dilution and charge disorder effect on physical properties in SrRu$_{1-x}$Ga$_x$O$_3$|Renu Gupta,Imtiaz Noor Bhatti,A K Pramanik###
(1644062, 1644067)
Site dilution and charge disorder effect on physical properties in SrRu1-xGax<missing VAR>O3.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

O3
###Site dilution and charge disorder effect on physical properties in SrRu$_{1-x}$Ga$_x$O$_3$|Renu Gupta,Imtiaz Noor Bhatti,A K Pramanik###
(1644069, 1644070)
Site dilution and charge disorder effect on physical properties in SrRu1-xGax<missing VAR>O3.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrRu1-xGa
###Site dilution and charge disorder effect on physical properties in SrRu$_{1-x}$Ga$_x$O$_3$|Renu Gupta,Imtiaz Noor Bhatti,A K Pramanik###
(1644102, 1644107)
 Here, we report an evolution of structural, magnetic and transport behaviorin doped SrRu1-xGax<missing VAR>O3 (x<missing VAR> le 0.2).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

O3
###Site dilution and charge disorder effect on physical properties in SrRu$_{1-x}$Ga$_x$O$_3$|Renu Gupta,Imtiaz Noor Bhatti,A K Pramanik###
(1644109, 1644110)
 Here, we report an evolution of structural, magnetic and transport behaviorin doped SrRu1-xGax<missing VAR>O3 (x<missing VAR> le 0.2).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga3
###Site dilution and charge disorder effect on physical properties in SrRu$_{1-x}$Ga$_x$O$_3$|Renu Gupta,Imtiaz Noor Bhatti,A K Pramanik###
(1644128, 1644129)
 The nonmagnetic dopantGa3 (3d<missing VAR>10) not only acts for magnetic site dilution in SrRuO3 butalso it modifies the Ru charge state and electronic density.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrRuO3
###Site dilution and charge disorder effect on physical properties in SrRu$_{1-x}$Ga$_x$O$_3$|Renu Gupta,Imtiaz Noor Bhatti,A K Pramanik###
(1644153, 1644156)
 The nonmagnetic dopantGa3 (3d<missing VAR>10) not only acts for magnetic site dilution in SrRuO3 butalso it modifies the Ru charge state and electronic density.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ru
###Site dilution and charge disorder effect on physical properties in SrRu$_{1-x}$Ga$_x$O$_3$|Renu Gupta,Imtiaz Noor Bhatti,A K Pramanik###
(1644169, 1644169)
 The nonmagnetic dopantGa3 (3d<missing VAR>10) not only acts for magnetic site dilution in SrRuO3 butalso it modifies the Ru charge state and electronic density.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga3
###Site dilution and charge disorder effect on physical properties in SrRu$_{1-x}$Ga$_x$O$_3$|Renu Gupta,Imtiaz Noor Bhatti,A K Pramanik###
(1644191, 1644192)
 Our studies showthat Ga3 substitution does not affect the originalorthorhombic-textitPbnm structure of SrRuO3 which is due to its matchingionic radii with Ru4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrRuO3
###Site dilution and charge disorder effect on physical properties in SrRu$_{1-x}$Ga$_x$O$_3$|Renu Gupta,Imtiaz Noor Bhatti,A K Pramanik###
(1644216, 1644219)
 Our studies showthat Ga3 substitution does not affect the originalorthorhombic-textitPbnm structure of SrRuO3 which is due to its matchingionic radii with Ru4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ru4
###Site dilution and charge disorder effect on physical properties in SrRu$_{1-x}$Ga$_x$O$_3$|Renu Gupta,Imtiaz Noor Bhatti,A K Pramanik###
(1644240, 1644241)
 Our studies showthat Ga3 substitution does not affect the originalorthorhombic-textitPbnm structure of SrRuO3 which is due to its matchingionic radii with Ru4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga3
###Site dilution and charge disorder effect on physical properties in SrRu$_{1-x}$Ga$_x$O$_3$|Renu Gupta,Imtiaz Noor Bhatti,A K Pramanik###
(1644247, 1644248)
 However, Ga3 has a substantial effect on themagnetic behavior of SrRuO3 where it decreases both magnetic moment as wellas magnetic transition temperature Tc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrRuO3
###Site dilution and charge disorder effect on physical properties in SrRu$_{1-x}$Ga$_x$O$_3$|Renu Gupta,Imtiaz Noor Bhatti,A K Pramanik###
(1644269, 1644272)
 However, Ga3 has a substantial effect on themagnetic behavior of SrRuO3 where it decreases both magnetic moment as wellas magnetic transition temperature Tc.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga3
###Site dilution and charge disorder effect on physical properties in SrRu$_{1-x}$Ga$_x$O$_3$|Renu Gupta,Imtiaz Noor Bhatti,A K Pramanik###
(1644382, 1644383)
 The Ga3induces an insulating state in SrRuO3 with x<missing VAR> > 0.05.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrRuO3
###Site dilution and charge disorder effect on physical properties in SrRu$_{1-x}$Ga$_x$O$_3$|Renu Gupta,Imtiaz Noor Bhatti,A K Pramanik###
(1644396, 1644399)
 The Ga3induces an insulating state in SrRuO3 with x<missing VAR> > 0.05.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrRuO3
###Site dilution and charge disorder effect on physical properties in SrRu$_{1-x}$Ga$_x$O$_3$|Renu Gupta,Imtiaz Noor Bhatti,A K Pramanik###
(1644480, 1644483)
 The metalliccharge transport just below Tc in SrRuO3 obeys Fermi liquid behaviorwhich, however breaks down at low temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Energy-efficient ultrafast SOT-MRAMs based on low-resistivity spin Hall metal Au0.25Pt0.75|Lijun Zhu,Lujun Zhu,Shengjie Shi,D. C. Ralph,R. A. Buhrman###
(1644563, 1644564)
Energy-efficient ultrafast SOT-MRAMs based on low-resistivity spin Hall metal Au0.25Pt0.75.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[258.0, 200, 'ps', 4],[349.0, 1, 'fJ', 6],[353.0, 50, 'fJ', 6],[366.0, 50, '%', 6],[378.0, 1, 'ns', 6]

Au0.25Pt0.75
###Energy-efficient ultrafast SOT-MRAMs based on low-resistivity spin Hall metal Au0.25Pt0.75|Lijun Zhu,Lujun Zhu,Shengjie Shi,D. C. Ralph,R. A. Buhrman###
(1644586, 1644589)
Energy-efficient ultrafast SOT-MRAMs based on low-resistivity spin Hall metal Au0.25Pt0.75.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[233.0, 200, 'ps', 4],[324.0, 1, 'fJ', 6],[328.0, 50, 'fJ', 6],[341.0, 50, '%', 6],[353.0, 1, 'ns', 6]

SO
###Energy-efficient ultrafast SOT-MRAMs based on low-resistivity spin Hall metal Au0.25Pt0.75|Lijun Zhu,Lujun Zhu,Shengjie Shi,D. C. Ralph,R. A. Buhrman###
(1644709, 1644710)
 Non-volatile magnetoresistive random access memories(MRAMs) driven by spin-orbit torques (SOTs) have promise to be faster and moreenergy-efficient than conventional semiconductor and spin-transfer-torquemagnetic memories.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 200, 'ps', 1],[203.0, 1, 'fJ', 3],[207.0, 50, 'fJ', 3],[220.0, 50, '%', 3],[232.0, 1, 'ns', 3]

Au0.25Pt0.75
###Energy-efficient ultrafast SOT-MRAMs based on low-resistivity spin Hall metal Au0.25Pt0.75|Lijun Zhu,Lujun Zhu,Shengjie Shi,D. C. Ralph,R. A. Buhrman###
(1644776, 1644779)
 This work reports that the spin Hall effect oflow-resistivity Au0.25Pt0.75 thin films enables ultrafast antidamping-torqueswitching of SOT-MRAM<missing VAR> devices for current pulse widths as short as 200 ps.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 200, 'ps', 0],[134.0, 1, 'fJ', 2],[138.0, 50, 'fJ', 2],[151.0, 50, '%', 2],[163.0, 1, 'ns', 2]

SO
###Energy-efficient ultrafast SOT-MRAMs based on low-resistivity spin Hall metal Au0.25Pt0.75|Lijun Zhu,Lujun Zhu,Shengjie Shi,D. C. Ralph,R. A. Buhrman###
(1644798, 1644799)
 This work reports that the spin Hall effect oflow-resistivity Au0.25Pt0.75 thin films enables ultrafast antidamping-torqueswitching of SOT-MRAM<missing VAR> devices for current pulse widths as short as 200 ps.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 200, 'ps', 0],[114.0, 1, 'fJ', 2],[118.0, 50, 'fJ', 2],[131.0, 50, '%', 2],[143.0, 1, 'ns', 2]

Au0.25Pt0.75
###Energy-efficient ultrafast SOT-MRAMs based on low-resistivity spin Hall metal Au0.25Pt0.75|Lijun Zhu,Lujun Zhu,Shengjie Shi,D. C. Ralph,R. A. Buhrman###
(1644874, 1644877)
 Ifcombined with industrial-quality lithography and already-demonstratedinterfacial engineering, our results show that an optimized MRAM<missing VAR> cell based onAu0.25Pt0.75 can have energy-efficient, ultrafast, and reliable switching, e.g.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 200, 'ps', 1],[36.0, 1, 'fJ', 1],[40.0, 50, 'fJ', 1],[53.0, 50, '%', 1],[65.0, 1, 'ns', 1]

Au0.25Pt0.75
###Energy-efficient ultrafast SOT-MRAMs based on low-resistivity spin Hall metal Au0.25Pt0.75|Lijun Zhu,Lujun Zhu,Shengjie Shi,D. C. Ralph,R. A. Buhrman###
(1644960, 1644963)
 The antidamping torque switching of the Au0.25Pt0.75 devices is 10times faster than expected from a rigid macrospin model, most likely because ofthe fast micromagnetics due to the enhanced non-uniformity within the freelayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 200, 'ps', 3],[47.0, 1, 'fJ', 1],[43.0, 50, 'fJ', 1],[30.0, 50, '%', 1],[18.0, 1, 'ns', 1]

Au0.25Pt0.75
###Energy-efficient ultrafast SOT-MRAMs based on low-resistivity spin Hall metal Au0.25Pt0.75|Lijun Zhu,Lujun Zhu,Shengjie Shi,D. C. Ralph,R. A. Buhrman###
(1645040, 1645043)
 These results demonstrate the feasibility of Au0.25Pt0.75-basedSOT-MRAMs as a candidate for ultrafast, reliable, energy-efficient,low-impedance, and unlimited-endurance memory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[218.0, 200, 'ps', 4],[127.0, 1, 'fJ', 2],[123.0, 50, 'fJ', 2],[110.0, 50, '%', 2],[98.0, 1, 'ns', 2]

SO
###Energy-efficient ultrafast SOT-MRAMs based on low-resistivity spin Hall metal Au0.25Pt0.75|Lijun Zhu,Lujun Zhu,Shengjie Shi,D. C. Ralph,R. A. Buhrman###
(1645048, 1645049)
 These results demonstrate the feasibility of Au0.25Pt0.75-basedSOT-MRAMs as a candidate for ultrafast, reliable, energy-efficient,low-impedance, and unlimited-endurance memory.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[226.0, 200, 'ps', 4],[135.0, 1, 'fJ', 2],[131.0, 50, 'fJ', 2],[118.0, 50, '%', 2],[106.0, 1, 'ns', 2]

Pt2HgSe3
###Multi-frequency Shubnikov-de Haas oscillations in topological semimetal Pt$_2$HgSe$_3$|Diego Mauro,Hugo Henck,Marco Gibertini,Michele Filippone,Enrico Giannini,Ignacio Gutierrez-Lezama,Alberto F. Morpurgo###
(1645117, 1645121)
Multi-frequency Shubnikov-de Haas oscillations in topological semimetal Pt2HgSe3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 0.5, 'eV', 1],[374.0, 2, 'D', 5]

(Pt2HgSe3)
###Multi-frequency Shubnikov-de Haas oscillations in topological semimetal Pt$_2$HgSe$_3$|Diego Mauro,Hugo Henck,Marco Gibertini,Michele Filippone,Enrico Giannini,Ignacio Gutierrez-Lezama,Alberto F. Morpurgo###
(1645128, 1645134)
 Monolayer jacutingaite (Pt2HgSe3) has been recently identified as acandidate quantum spin Hall system with a 0.5 eV band gap, but no transportmeasurements have been performed so far on this material, neither in monolayernor in the bulk.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 0.5, 'eV', 0],[361.0, 2, 'D', 4]

H
###Multi-frequency Shubnikov-de Haas oscillations in topological semimetal Pt$_2$HgSe$_3$|Diego Mauro,Hugo Henck,Marco Gibertini,Michele Filippone,Enrico Giannini,Ignacio Gutierrez-Lezama,Alberto F. Morpurgo###
(1645299, 1645299)
 Magnetoresistance measurementsindicate that jacutingaite is a semimetal, exhibiting Shubnikov-de Haas (SdH)resistance oscillations with a multi-frequency spectrum.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 0.5, 'eV', 2],[196.0, 2, 'D', 2]

H
###Multi-frequency Shubnikov-de Haas oscillations in topological semimetal Pt$_2$HgSe$_3$|Diego Mauro,Hugo Henck,Marco Gibertini,Michele Filippone,Enrico Giannini,Ignacio Gutierrez-Lezama,Alberto F. Morpurgo###
(1645340, 1645340)
 We adapt theLifshitz-Kosevich formula to analyze quantitatively the SdH resistanceoscillations in the presence of multiple frequencies, and find that theexperimental observations are overall reproduced well by band structureab-initio calculations for bulk jacutingaite.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 0.5, 'eV', 3],[155.0, 2, 'D', 1]

WTe2
###Multi-frequency Shubnikov-de Haas oscillations in topological semimetal Pt$_2$HgSe$_3$|Diego Mauro,Hugo Henck,Marco Gibertini,Michele Filippone,Enrico Giannini,Ignacio Gutierrez-Lezama,Alberto F. Morpurgo###
(1645448, 1645450)
 Together with the relatively highelectron mobility extracted from the experiments (approx 2000 cm2/Vs,comparable to what is observed in WTe2 crystals of the same thickness), ourresults indicate that monolayer jacutingaite should provide an excellentplatform to investigate transport in 2D quantum spin Hall systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[286.0, 0.5, 'eV', 4],[45.0, 2, 'D', 0]

Bi2Se3
###Observation of spin-momentum locked surface states in amorphous Bi$_{2}$Se$_{3}$|Paul Corbae,Samuel Ciocys,Daniel Varjas,Ellis Kennedy,Steven Zeltmann,Manel Molina-Ruiz,Sinead Griffin,Chris Jozwiak,Zhanghui Chen,Lin-Wang Wang,Andrew M. Minor,Mary Scott,Adolfo G. Grushin,Alessandra Lanzara,Frances Hellman###
(1645532, 1645535)
Observation of spin-momentum locked surface states in amorphous Bi2Se3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Observation of spin-momentum locked surface states in amorphous Bi$_{2}$Se$_{3}$|Paul Corbae,Samuel Ciocys,Daniel Varjas,Ellis Kennedy,Steven Zeltmann,Manel Molina-Ruiz,Sinead Griffin,Chris Jozwiak,Zhanghui Chen,Lin-Wang Wang,Andrew M. Minor,Mary Scott,Adolfo G. Grushin,Alessandra Lanzara,Frances Hellman###
(1645618, 1645618)
 In this work we addresswhether amorphous topological materials, which lie beyond this classificationdue to the lack of long-range structural order, exist in the solid state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Se3
###Observation of spin-momentum locked surface states in amorphous Bi$_{2}$Se$_{3}$|Paul Corbae,Samuel Ciocys,Daniel Varjas,Ellis Kennedy,Steven Zeltmann,Manel Molina-Ruiz,Sinead Griffin,Chris Jozwiak,Zhanghui Chen,Lin-Wang Wang,Andrew M. Minor,Mary Scott,Adolfo G. Grushin,Alessandra Lanzara,Frances Hellman###
(1645686, 1645689)
 Westudy amorphous Bi2Se3 thin films, which show a metallic behavior and anincreased bulk resistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Se3
###Observation of spin-momentum locked surface states in amorphous Bi$_{2}$Se$_{3}$|Paul Corbae,Samuel Ciocys,Daniel Varjas,Ellis Kennedy,Steven Zeltmann,Manel Molina-Ruiz,Sinead Griffin,Chris Jozwiak,Zhanghui Chen,Lin-Wang Wang,Andrew M. Minor,Mary Scott,Adolfo G. Grushin,Alessandra Lanzara,Frances Hellman###
(1645846, 1645849)
 Spin resolved photoemission spectroscopy shows this state has ananti-symmetric spin texture resembling that of the surface state of crystallineBi2Se3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sb2Te3
###Spin memory of the topological material under strong disorder|Inna Korzhovska,Haiming Deng,Lukas Zhao,Zhiyi Chen,Marcin Konczykowski,Shihua Zhao,Simone Raoux,Lia Krusin-Elbaum###
(1646176, 1646179)
 Here we report a directly detectedrobust spin response in structurally disordered thin films of the topologicalmaterial Sb2Te3 free of extrinsic magnetic dopants, which we controllably tunefrom a strong (amorphous) to a weak crystalline) disorder state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 200, 'K', 1],[239.0, 2, 'D', 4]

W
###Spin memory of the topological material under strong disorder|Inna Korzhovska,Haiming Deng,Lukas Zhao,Zhiyi Chen,Marcin Konczykowski,Shihua Zhao,Simone Raoux,Lia Krusin-Elbaum###
(1646403, 1646403)
Within the crystalline state, it transitions into a positive MR correspondingto the weak antilocalization (WAL) quantum interference effect, with a 2Dscaling characteristic of the topological state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 200, 'K', 3],[15.0, 2, 'D', 0]

EuO1-x
###Role of spin mixing conductance in determining thermal spin pumping near the ferromagnetic phase transition in EuO_{1-x} and La2NiMnO6|Kingshuk Mallick,Aditya A. Wagh,Adrian Ionescu,Crispin H. W. Barnes,P. S. Anil Kumar###
(1646559, 1646563)
Role of spin mixing conductance in determining thermal spin pumping near the ferromagnetic phase transition in EuO1-x and La2NiMnO6.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

La2NiMnO6
###Role of spin mixing conductance in determining thermal spin pumping near the ferromagnetic phase transition in EuO_{1-x} and La2NiMnO6|Kingshuk Mallick,Aditya A. Wagh,Adrian Ionescu,Crispin H. W. Barnes,P. S. Anil Kumar###
(1646567, 1646572)
Role of spin mixing conductance in determining thermal spin pumping near the ferromagnetic phase transition in EuO1-x and La2NiMnO6.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SS
###Role of spin mixing conductance in determining thermal spin pumping near the ferromagnetic phase transition in EuO_{1-x} and La2NiMnO6|Kingshuk Mallick,Aditya A. Wagh,Adrian Ionescu,Crispin H. W. Barnes,P. S. Anil Kumar###
(1646612, 1646613)
 We present a comprehensive study of the temperature (T) dependence of thelongitudinal spin Seebeck effect (L<missing VAR>SSE) in Pt/EuO1-x and Pt/La2NiMnO6 (LNMO)hybrid structures across their Curie temperatures (Tc).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt/EuO1-x
###Role of spin mixing conductance in determining thermal spin pumping near the ferromagnetic phase transition in EuO_{1-x} and La2NiMnO6|Kingshuk Mallick,Aditya A. Wagh,Adrian Ionescu,Crispin H. W. Barnes,P. S. Anil Kumar###
(1646619, 1646625)
 We present a comprehensive study of the temperature (T) dependence of thelongitudinal spin Seebeck effect (L<missing VAR>SSE) in Pt/EuO1-x and Pt/La2NiMnO6 (LNMO)hybrid structures across their Curie temperatures (Tc).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

NF
###Magnetic field effects in the near-field radiative heat transfer between planar structures|Edwin Moncada-Villa,Juan Carlos Cuevas###
(1647139, 1647140)
 One of the main challenges in the field of thermal radiation is to activelycontrol the near-field radiative heat transfer (NFRHT) between closely spacedbodies.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magnetic field effects in the near-field radiative heat transfer between planar structures|Edwin Moncada-Villa,Juan Carlos Cuevas###
(1647156, 1647156)
 In this context, the use of an external magnetic field has emerged as avery attractive possibility and a plethora of physical phenomena have been putforward in the last few years.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NF
###Magnetic field effects in the near-field radiative heat transfer between planar structures|Edwin Moncada-Villa,Juan Carlos Cuevas###
(1647260, 1647261)
 Here, we predict some additionalmagnetic-field-induced phenomena that can take place in the context of NFRHTbetween planar layered structures containing magneto-optical (M<missing VAR>O) materials(mainly doped semiconductors like InSb).
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Magnetic field effects in the near-field radiative heat transfer between planar structures|Edwin Moncada-Villa,Juan Carlos Cuevas###
(1647283, 1647283)
 Here, we predict some additionalmagnetic-field-induced phenomena that can take place in the context of NFRHTbetween planar layered structures containing magneto-optical (M<missing VAR>O) materials(mainly doped semiconductors like InSb).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sb
###Magnetic field effects in the near-field radiative heat transfer between planar structures|Edwin Moncada-Villa,Juan Carlos Cuevas###
(1647299, 1647299)
 Here, we predict some additionalmagnetic-field-induced phenomena that can take place in the context of NFRHTbetween planar layered structures containing magneto-optical (M<missing VAR>O) materials(mainly doped semiconductors like InSb).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magnetic field effects in the near-field radiative heat transfer between planar structures|Edwin Moncada-Villa,Juan Carlos Cuevas###
(1647303, 1647303)
 In particular, we predict thepossibility of increasing the NFRHT upon applying an external magnetic field inan asymmetric structure consisting of two infinite plates made of InSb and Au.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NF
###Magnetic field effects in the near-field radiative heat transfer between planar structures|Edwin Moncada-Villa,Juan Carlos Cuevas###
(1647323, 1647324)
 In particular, we predict thepossibility of increasing the NFRHT upon applying an external magnetic field inan asymmetric structure consisting of two infinite plates made of InSb and Au.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

InSb
###Magnetic field effects in the near-field radiative heat transfer between planar structures|Edwin Moncada-Villa,Juan Carlos Cuevas###
(1647364, 1647365)
 In particular, we predict thepossibility of increasing the NFRHT upon applying an external magnetic field inan asymmetric structure consisting of two infinite plates made of InSb and Au.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Au
###Magnetic field effects in the near-field radiative heat transfer between planar structures|Edwin Moncada-Villa,Juan Carlos Cuevas###
(1647369, 1647369)
 In particular, we predict thepossibility of increasing the NFRHT upon applying an external magnetic field inan asymmetric structure consisting of two infinite plates made of InSb and Au.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NF
###Magnetic field effects in the near-field radiative heat transfer between planar structures|Edwin Moncada-Villa,Juan Carlos Cuevas###
(1647395, 1647396)
We also study the impact of a magnetic field in the NFRHT between structurescontaining M<missing VAR>O thin films and show that the effect is more drastic than in theirbulk counterparts.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Magnetic field effects in the near-field radiative heat transfer between planar structures|Edwin Moncada-Villa,Juan Carlos Cuevas###
(1647409, 1647409)
We also study the impact of a magnetic field in the NFRHT between structurescontaining M<missing VAR>O thin films and show that the effect is more drastic than in theirbulk counterparts.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

InSb
###Magnetic field effects in the near-field radiative heat transfer between planar structures|Edwin Moncada-Villa,Juan Carlos Cuevas###
(1647519, 1647520)
, the dependence of the radiative heatconductance on the orientation of an external magnetic field, in the case oftwo infinite plates made of InSb and show that one can strongly modulate theNFRHT by simply changing the orientation of the magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NF
###Magnetic field effects in the near-field radiative heat transfer between planar structures|Edwin Moncada-Villa,Juan Carlos Cuevas###
(1647539, 1647540)
, the dependence of the radiative heatconductance on the orientation of an external magnetic field, in the case oftwo infinite plates made of InSb and show that one can strongly modulate theNFRHT by simply changing the orientation of the magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NF
###Magnetic field effects in the near-field radiative heat transfer between planar structures|Edwin Moncada-Villa,Juan Carlos Cuevas###
(1647618, 1647619)
 All thephenomena predicted in this work can be experimentally tested with existenttechnology and provide a new insight into the topic of active control of NFRHT.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Magnetic field-induced type-II Weylsemimetallic state in geometrically frustrated Shastry-Sutherland lattice GdB4|Wonhyuk Shon,Dong-Choon Ryu,Kyoo Kim,B. I. Min,Bongjae Kim,Boyoun Kang,B. K. Cho,Heon-Jung Kim,Jong-Soo Rhyee###
(1647641, 1647642)
Magnetic field-induced type-II Weylsemimetallic state in geometrically frustrated Shastry-Sutherland lattice GdB4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GdB4
###Magnetic field-induced type-II Weylsemimetallic state in geometrically frustrated Shastry-Sutherland lattice GdB4|Wonhyuk Shon,Dong-Choon Ryu,Kyoo Kim,B. I. Min,Bongjae Kim,Boyoun Kang,B. K. Cho,Heon-Jung Kim,Jong-Soo Rhyee###
(1647660, 1647662)
Magnetic field-induced type-II Weylsemimetallic state in geometrically frustrated Shastry-Sutherland lattice GdB4.
Featurization terminated normally.
0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magnetic field-induced type-II Weylsemimetallic state in geometrically frustrated Shastry-Sutherland lattice GdB4|Wonhyuk Shon,Dong-Choon Ryu,Kyoo Kim,B. I. Min,Bongjae Kim,Boyoun Kang,B. K. Cho,Heon-Jung Kim,Jong-Soo Rhyee###
(1647797, 1647797)
 In this study, wereport the emergence of the type-II Weyl semimetallic state in thegeometrically frustrated non-collinear antiferromagnetic Shastry-Sutherlandlattice (SSL) GdB4 crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Magnetic field-induced type-II Weylsemimetallic state in geometrically frustrated Shastry-Sutherland lattice GdB4|Wonhyuk Shon,Dong-Choon Ryu,Kyoo Kim,B. I. Min,Bongjae Kim,Boyoun Kang,B. K. Cho,Heon-Jung Kim,Jong-Soo Rhyee###
(1647819, 1647820)
 In this study, wereport the emergence of the type-II Weyl semimetallic state in thegeometrically frustrated non-collinear antiferromagnetic Shastry-Sutherlandlattice (SSL) GdB4 crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SS
###Magnetic field-induced type-II Weylsemimetallic state in geometrically frustrated Shastry-Sutherland lattice GdB4|Wonhyuk Shon,Dong-Choon Ryu,Kyoo Kim,B. I. Min,Bongjae Kim,Boyoun Kang,B. K. Cho,Heon-Jung Kim,Jong-Soo Rhyee###
(1647851, 1647852)
 In this study, wereport the emergence of the type-II Weyl semimetallic state in thegeometrically frustrated non-collinear antiferromagnetic Shastry-Sutherlandlattice (SSL) GdB4 crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GdB4
###Magnetic field-induced type-II Weylsemimetallic state in geometrically frustrated Shastry-Sutherland lattice GdB4|Wonhyuk Shon,Dong-Choon Ryu,Kyoo Kim,B. I. Min,Bongjae Kim,Boyoun Kang,B. K. Cho,Heon-Jung Kim,Jong-Soo Rhyee###
(1647856, 1647858)
 In this study, wereport the emergence of the type-II Weyl semimetallic state in thegeometrically frustrated non-collinear antiferromagnetic Shastry-Sutherlandlattice (SSL) GdB4 crystal.
Featurization terminated normally.
0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SS
###Magnetic field-induced type-II Weylsemimetallic state in geometrically frustrated Shastry-Sutherland lattice GdB4|Wonhyuk Shon,Dong-Choon Ryu,Kyoo Kim,B. I. Min,Bongjae Kim,Boyoun Kang,B. K. Cho,Heon-Jung Kim,Jong-Soo Rhyee###
(1647886, 1647887)
 When we apply magnetic fields perpendicular to thenoncollinear moments in SSL<missing VAR> plane, Weyl nodes are created above and below theFermi energy along the M<missing VAR>-A line (tau-band) because the spin tilting breaks thetime-reversal symmetry and lifts band degeneracy while preserving C4z<missing VAR> or C2z<missing VAR>symmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C4
###Magnetic field-induced type-II Weylsemimetallic state in geometrically frustrated Shastry-Sutherland lattice GdB4|Wonhyuk Shon,Dong-Choon Ryu,Kyoo Kim,B. I. Min,Bongjae Kim,Boyoun Kang,B. K. Cho,Heon-Jung Kim,Jong-Soo Rhyee###
(1647961, 1647962)
 When we apply magnetic fields perpendicular to thenoncollinear moments in SSL<missing VAR> plane, Weyl nodes are created above and below theFermi energy along the M<missing VAR>-A line (tau-band) because the spin tilting breaks thetime-reversal symmetry and lifts band degeneracy while preserving C4z<missing VAR> or C2z<missing VAR>symmetry.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C2
###Magnetic field-induced type-II Weylsemimetallic state in geometrically frustrated Shastry-Sutherland lattice GdB4|Wonhyuk Shon,Dong-Choon Ryu,Kyoo Kim,B. I. Min,Bongjae Kim,Boyoun Kang,B. K. Cho,Heon-Jung Kim,Jong-Soo Rhyee###
(1647967, 1647968)
 When we apply magnetic fields perpendicular to thenoncollinear moments in SSL<missing VAR> plane, Weyl nodes are created above and below theFermi energy along the M<missing VAR>-A line (tau-band) because the spin tilting breaks thetime-reversal symmetry and lifts band degeneracy while preserving C4z<missing VAR> or C2z<missing VAR>symmetry.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GdB4
###Magnetic field-induced type-II Weylsemimetallic state in geometrically frustrated Shastry-Sutherland lattice GdB4|Wonhyuk Shon,Dong-Choon Ryu,Kyoo Kim,B. I. Min,Bongjae Kim,Boyoun Kang,B. K. Cho,Heon-Jung Kim,Jong-Soo Rhyee###
(1647985, 1647987)
 The unique electronic structure of GdB4 under magnetic fields appliedperpendicular to the SSL<missing VAR> gives rise to a non-trivial Berry phase, detected inde Haas-van Alphen experiments and chiral-anomaly-induced negativemagnetoresistance.
Featurization terminated normally.
0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SS
###Magnetic field-induced type-II Weylsemimetallic state in geometrically frustrated Shastry-Sutherland lattice GdB4|Wonhyuk Shon,Dong-Choon Ryu,Kyoo Kim,B. I. Min,Bongjae Kim,Boyoun Kang,B. K. Cho,Heon-Jung Kim,Jong-Soo Rhyee###
(1648004, 1648005)
 The unique electronic structure of GdB4 under magnetic fields appliedperpendicular to the SSL<missing VAR> gives rise to a non-trivial Berry phase, detected inde Haas-van Alphen experiments and chiral-anomaly-induced negativemagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SS
###Magnetic field-induced type-II Weylsemimetallic state in geometrically frustrated Shastry-Sutherland lattice GdB4|Wonhyuk Shon,Dong-Choon Ryu,Kyoo Kim,B. I. Min,Bongjae Kim,Boyoun Kang,B. K. Cho,Heon-Jung Kim,Jong-Soo Rhyee###
(1648075, 1648076)
 The emergence of the magnetic field-induced Weyl state inSSL<missing VAR> presents a new guiding principle to develop novel types of Weyl semimetalsin frustrated spin systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CaAl2Si2
###Magnetotransport properties of the layered CaAl2Si2 semimetal hosting multiple nontrivial topological states|Hao Su,Xianbiao Shi,Wei Xia,Hongyuan Wang,Xuesong Hanli,Zhenhai Yu,Xia Wang,Zhiqiang Zou,Na Yu,Weiwei Zhao,Gang Xu,Yanfeng Guo###
(1648131, 1648135)
Magnetotransport properties of the layered CaAl2Si2 semimetal hosting multiple nontrivial topological states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.4,0.4,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[394.0, 1.22, 'eV', 6],[446.0, 3, 'meV', 7]

CaAl2Si2
###Magnetotransport properties of the layered CaAl2Si2 semimetal hosting multiple nontrivial topological states|Hao Su,Xianbiao Shi,Wei Xia,Hongyuan Wang,Xuesong Hanli,Zhenhai Yu,Xia Wang,Zhiqiang Zou,Na Yu,Weiwei Zhao,Gang Xu,Yanfeng Guo###
(1648238, 1648242)
 We report herein the results ofmagnetotransport measurements and ab initio calculations on single crystallineCaAl2Si2 semimetal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.4,0.4,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[287.0, 1.22, 'eV', 4],[339.0, 3, 'meV', 5]

(SOC)
###Magnetotransport properties of the layered CaAl2Si2 semimetal hosting multiple nontrivial topological states|Hao Su,Xianbiao Shi,Wei Xia,Hongyuan Wang,Xuesong Hanli,Zhenhai Yu,Xia Wang,Zhiqiang Zou,Na Yu,Weiwei Zhao,Gang Xu,Yanfeng Guo###
(1648398, 1648402)
 Without spin-orbit coupling (SOC), the ab initio calculations suggestCaAl2Si2 as a system hosting a topological nodal-line setting around theGamma point in the Brillouin zone close to the Fermi level.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 1.22, 'eV', 1],[179.0, 3, 'meV', 2]

CaAl2Si2
###Magnetotransport properties of the layered CaAl2Si2 semimetal hosting multiple nontrivial topological states|Hao Su,Xianbiao Shi,Wei Xia,Hongyuan Wang,Xuesong Hanli,Zhenhai Yu,Xia Wang,Zhiqiang Zou,Na Yu,Weiwei Zhao,Gang Xu,Yanfeng Guo###
(1648416, 1648420)
 Without spin-orbit coupling (SOC), the ab initio calculations suggestCaAl2Si2 as a system hosting a topological nodal-line setting around theGamma point in the Brillouin zone close to the Fermi level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.4,0.4,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 1.22, 'eV', 1],[161.0, 3, 'meV', 2]

SOC
###Magnetotransport properties of the layered CaAl2Si2 semimetal hosting multiple nontrivial topological states|Hao Su,Xianbiao Shi,Wei Xia,Hongyuan Wang,Xuesong Hanli,Zhenhai Yu,Xia Wang,Zhiqiang Zou,Na Yu,Weiwei Zhao,Gang Xu,Yanfeng Guo###
(1648475, 1648477)
 Once includingthe SOC, the fragile nodal-line will be gapped and a pair of Dirac pointsemerge along the high symmetric Gamma-A direction, which is about 1.22 eVbelow the Fermi level.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 1.22, 'eV', 0],[104.0, 3, 'meV', 1]

SOC
###Magnetotransport properties of the layered CaAl2Si2 semimetal hosting multiple nontrivial topological states|Hao Su,Xianbiao Shi,Wei Xia,Hongyuan Wang,Xuesong Hanli,Zhenhai Yu,Xia Wang,Zhiqiang Zou,Na Yu,Weiwei Zhao,Gang Xu,Yanfeng Guo###
(1648543, 1648545)
 The SOC can also induce a topological insulator statealong the Gamma-A direction with a gap of about 3 meV.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 1.22, 'eV', 1],[36.0, 3, 'meV', 0]

CaAl2Si2
###Magnetotransport properties of the layered CaAl2Si2 semimetal hosting multiple nontrivial topological states|Hao Su,Xianbiao Shi,Wei Xia,Hongyuan Wang,Xuesong Hanli,Zhenhai Yu,Xia Wang,Zhiqiang Zou,Na Yu,Weiwei Zhao,Gang Xu,Yanfeng Guo###
(1648591, 1648595)
 The resultsdemonstrate CaAl2Si2 as an excellent platform for the study of noveltopological physics with multiple topological states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.4,0.4,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 1.22, 'eV', 2],[10.0, 3, 'meV', 1]

SO
###Iridium Enabled Field-free Spin-orbit Torque Switching of Perpendicular Magnetic Tunnel Junction Device|Yang Liu,Bing Zhou,Zhengkun Dai,Enbo Zhang,Jian-Gang Zhu###
(1648681, 1648682)
 Writing magnetic bits by spin-orbit torques (SOTs) arising from spin Halleffect creates new possibilities for ultrafast and low-power magnetoresistiverandom access memory (MRAM).
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[342.0, 50, 'nm', 5],[345.0, 500, 'nm', 5]

SO
###Iridium Enabled Field-free Spin-orbit Torque Switching of Perpendicular Magnetic Tunnel Junction Device|Yang Liu,Bing Zhou,Zhengkun Dai,Enbo Zhang,Jian-Gang Zhu###
(1648769, 1648770)
 For perpendicular MRAM<missing VAR>, an extra in-plane field isrequired to break the symmetry for the deterministic SOT<missing VAR> writing of theperpendicular storage layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[254.0, 50, 'nm', 4],[257.0, 500, 'nm', 4]

SO
###Iridium Enabled Field-free Spin-orbit Torque Switching of Perpendicular Magnetic Tunnel Junction Device|Yang Liu,Bing Zhou,Zhengkun Dai,Enbo Zhang,Jian-Gang Zhu###
(1648806, 1648807)
 Although schemes have been demonstrated inexternal-field-free SOT<missing VAR> switching of a perpendicular layer, practicallyintegrating them with perpendicular MTJs still appears to be challenging.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[217.0, 50, 'nm', 3],[220.0, 500, 'nm', 3]

SO
###Iridium Enabled Field-free Spin-orbit Torque Switching of Perpendicular Magnetic Tunnel Junction Device|Yang Liu,Bing Zhou,Zhengkun Dai,Enbo Zhang,Jian-Gang Zhu###
(1648868, 1648869)
 Here,we present experimental demonstration of spin-orbit torques (SOTs) switching aperpendicular magnetic tunnel junction (MTJ) device without applying anexternal magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 50, 'nm', 2],[158.0, 500, 'nm', 2]

Ir
###Iridium Enabled Field-free Spin-orbit Torque Switching of Perpendicular Magnetic Tunnel Junction Device|Yang Liu,Bing Zhou,Zhengkun Dai,Enbo Zhang,Jian-Gang Zhu###
(1648910, 1648910)
 An Ir layer is used to serve dual-purpose of bothinjecting the pure spin current via spin Hall effect and mediating an in-planeexchange field to the perpendicular free layer of the MTJ.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 50, 'nm', 1],[117.0, 500, 'nm', 1]

SO
###Iridium Enabled Field-free Spin-orbit Torque Switching of Perpendicular Magnetic Tunnel Junction Device|Yang Liu,Bing Zhou,Zhengkun Dai,Enbo Zhang,Jian-Gang Zhu###
(1648990, 1648991)
 Robust field-freeSOT<missing VAR> switching with pulsed write path current is demonstrated for various MTJsizes ranging from 50 nm to 500 nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 50, 'nm', 0],[36.0, 500, 'nm', 0]

CoO
###Cation spin and superexchange interaction in oxide materials below and above spin crossover under high pressure|Vladimir A. Gavrichkov,Semyon I. Polukeev,Sergey G. Ovchinnikov###
(1649430, 1649431)
 The mostinteresting result concerns the magnetic state of cobalt and nickel oxides CoO,Ni2O3 and also La2CoO4, LaNiO3 isostructural to well-knownhigh-T<missing VAR>C and colossal magnetoresistance materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni2O3
###Cation spin and superexchange interaction in oxide materials below and above spin crossover under high pressure|Vladimir A. Gavrichkov,Semyon I. Polukeev,Sergey G. Ovchinnikov###
(1649435, 1649438)
 The mostinteresting result concerns the magnetic state of cobalt and nickel oxides CoO,Ni2O3 and also La2CoO4, LaNiO3 isostructural to well-knownhigh-T<missing VAR>C and colossal magnetoresistance materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La2CoO4
###Cation spin and superexchange interaction in oxide materials below and above spin crossover under high pressure|Vladimir A. Gavrichkov,Semyon I. Polukeev,Sergey G. Ovchinnikov###
(1649444, 1649448)
 The mostinteresting result concerns the magnetic state of cobalt and nickel oxides CoO,Ni2O3 and also La2CoO4, LaNiO3 isostructural to well-knownhigh-T<missing VAR>C and colossal magnetoresistance materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaNiO3
###Cation spin and superexchange interaction in oxide materials below and above spin crossover under high pressure|Vladimir A. Gavrichkov,Semyon I. Polukeev,Sergey G. Ovchinnikov###
(1649451, 1649454)
 The mostinteresting result concerns the magnetic state of cobalt and nickel oxides CoO,Ni2O3 and also La2CoO4, LaNiO3 isostructural to well-knownhigh-T<missing VAR>C and colossal magnetoresistance materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Cation spin and superexchange interaction in oxide materials below and above spin crossover under high pressure|Vladimir A. Gavrichkov,Semyon I. Polukeev,Sergey G. Ovchinnikov###
(1649468, 1649468)
 The mostinteresting result concerns the magnetic state of cobalt and nickel oxides CoO,Ni2O3 and also La2CoO4, LaNiO3 isostructural to well-knownhigh-T<missing VAR>C and colossal magnetoresistance materials.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(FeBO3)
###Cation spin and superexchange interaction in oxide materials below and above spin crossover under high pressure|Vladimir A. Gavrichkov,Semyon I. Polukeev,Sergey G. Ovchinnikov###
(1649551, 1649556)
 Change of the interaction fromantiferromagnetic below spin crossover to ferromagnetic above spin crossover ispredicted for oxide materials with cations in d<missing VAR>5(FeBO3) and d<missing VAR>7(CoO)configurations, while for materials with the other dn configurations spincrossover under high pressure does not change the sign of the superexchangeinteraction.
Featurization successful!
0,0,0,0,0.2,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(CoO)
###Cation spin and superexchange interaction in oxide materials below and above spin crossover under high pressure|Vladimir A. Gavrichkov,Semyon I. Polukeev,Sergey G. Ovchinnikov###
(1649562, 1649565)
 Change of the interaction fromantiferromagnetic below spin crossover to ferromagnetic above spin crossover ispredicted for oxide materials with cations in d<missing VAR>5(FeBO3) and d<missing VAR>7(CoO)configurations, while for materials with the other dn configurations spincrossover under high pressure does not change the sign of the superexchangeinteraction.
Featurization successful!
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrIrO3
###Magnetotransport of SrIrO3 films on (110) DyScO3|A. K. Jaiswal,A. G. Zaitsev,R. Singh,R. Schneider,D. Fuchs###
(1649631, 1649634)
Magnetotransport of SrIrO3 films on (110) DyScO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 50, 'nm', 1],[243.0, 0.38, '%', 4],[379.0, 1, 'increases', 7],[424.0, 3, 'K', 7]

DyScO3
###Magnetotransport of SrIrO3 films on (110) DyScO3|A. K. Jaiswal,A. G. Zaitsev,R. Singh,R. Schneider,D. Fuchs###
(1649644, 1649647)
Magnetotransport of SrIrO3 films on (110) DyScO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 50, 'nm', 1],[230.0, 0.38, '%', 4],[366.0, 1, 'increases', 7],[411.0, 3, 'K', 7]

SrIrO3
###Magnetotransport of SrIrO3 films on (110) DyScO3|A. K. Jaiswal,A. G. Zaitsev,R. Singh,R. Schneider,D. Fuchs###
(1649660, 1649663)
 Epitaxial perovskite (110) oriented SrIrO3 (SIO) thin films were grown bypulsed laser deposition on (110) oriented DyScO3 (D<missing VAR>SO) substrates with variousfilm thickness t<missing VAR> (2 nm < t<missing VAR> < 50 nm).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 50, 'nm', 0],[214.0, 0.38, '%', 3],[350.0, 1, 'increases', 6],[395.0, 3, 'K', 6]

(SIO)
###Magnetotransport of SrIrO3 films on (110) DyScO3|A. K. Jaiswal,A. G. Zaitsev,R. Singh,R. Schneider,D. Fuchs###
(1649665, 1649669)
 Epitaxial perovskite (110) oriented SrIrO3 (SIO) thin films were grown bypulsed laser deposition on (110) oriented DyScO3 (D<missing VAR>SO) substrates with variousfilm thickness t<missing VAR> (2 nm < t<missing VAR> < 50 nm).
Featurization successful!
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 50, 'nm', 0],[208.0, 0.38, '%', 3],[344.0, 1, 'increases', 6],[389.0, 3, 'K', 6]

DyScO3
###Magnetotransport of SrIrO3 films on (110) DyScO3|A. K. Jaiswal,A. G. Zaitsev,R. Singh,R. Schneider,D. Fuchs###
(1649696, 1649699)
 Epitaxial perovskite (110) oriented SrIrO3 (SIO) thin films were grown bypulsed laser deposition on (110) oriented DyScO3 (D<missing VAR>SO) substrates with variousfilm thickness t<missing VAR> (2 nm < t<missing VAR> < 50 nm).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 50, 'nm', 0],[178.0, 0.38, '%', 3],[314.0, 1, 'increases', 6],[359.0, 3, 'K', 6]

O
###Magnetotransport of SrIrO3 films on (110) DyScO3|A. K. Jaiswal,A. G. Zaitsev,R. Singh,R. Schneider,D. Fuchs###
(1649704, 1649704)
 Epitaxial perovskite (110) oriented SrIrO3 (SIO) thin films were grown bypulsed laser deposition on (110) oriented DyScO3 (D<missing VAR>SO) substrates with variousfilm thickness t<missing VAR> (2 nm < t<missing VAR> < 50 nm).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 50, 'nm', 0],[173.0, 0.38, '%', 3],[309.0, 1, 'increases', 6],[354.0, 3, 'K', 6]

SO
###Magnetotransport of SrIrO3 films on (110) DyScO3|A. K. Jaiswal,A. G. Zaitsev,R. Singh,R. Schneider,D. Fuchs###
(1649784, 1649785)
The nearly perfect in-plane lattice matching of D<missing VAR>SO with respect to SIO andsame symmetry result in a full epitaxial inplane alignment, i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 50, 'nm', 2],[92.0, 0.38, '%', 1],[228.0, 1, 'increases', 4],[273.0, 3, 'K', 4]

SIO
###Magnetotransport of SrIrO3 films on (110) DyScO3|A. K. Jaiswal,A. G. Zaitsev,R. Singh,R. Schneider,D. Fuchs###
(1649793, 1649795)
The nearly perfect in-plane lattice matching of D<missing VAR>SO with respect to SIO andsame symmetry result in a full epitaxial inplane alignment, i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 50, 'nm', 2],[82.0, 0.38, '%', 1],[218.0, 1, 'increases', 4],[263.0, 3, 'K', 4]

SO
###Magnetotransport of SrIrO3 films on (110) DyScO3|A. K. Jaiswal,A. G. Zaitsev,R. Singh,R. Schneider,D. Fuchs###
(1649835, 1649836)
, the c<missing VAR>-axis ofD<missing VAR>SO and SIO are parallel to each other with only slightly enlarged d<missing VAR>110out-of-plane lattice spacing (0.38%) due to the small in-plane compressivestrain caused by the D<missing VAR>SO substrate.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 50, 'nm', 3],[41.0, 0.38, '%', 0],[177.0, 1, 'increases', 3],[222.0, 3, 'K', 3]

SIO
###Magnetotransport of SrIrO3 films on (110) DyScO3|A. K. Jaiswal,A. G. Zaitsev,R. Singh,R. Schneider,D. Fuchs###
(1649840, 1649842)
, the c<missing VAR>-axis ofD<missing VAR>SO and SIO are parallel to each other with only slightly enlarged d<missing VAR>110out-of-plane lattice spacing (0.38%) due to the small in-plane compressivestrain caused by the D<missing VAR>SO substrate.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 50, 'nm', 3],[35.0, 0.38, '%', 0],[171.0, 1, 'increases', 3],[216.0, 3, 'K', 3]

SO
###Magnetotransport of SrIrO3 films on (110) DyScO3|A. K. Jaiswal,A. G. Zaitsev,R. Singh,R. Schneider,D. Fuchs###
(1649905, 1649906)
, the c<missing VAR>-axis ofD<missing VAR>SO and SIO are parallel to each other with only slightly enlarged d<missing VAR>110out-of-plane lattice spacing (0.38%) due to the small in-plane compressivestrain caused by the D<missing VAR>SO substrate.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 50, 'nm', 3],[28.0, 0.38, '%', 0],[107.0, 1, 'increases', 3],[152.0, 3, 'K', 3]

SIO
###Magnetotransport of SrIrO3 films on (110) DyScO3|A. K. Jaiswal,A. G. Zaitsev,R. Singh,R. Schneider,D. Fuchs###
(1649955, 1649957)
 Measurements of the magnetoresistance MRwere carried out for current flow along the [001] and [1-10] direction of SIOand magnetic field perpendicular to the film plane.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[225.0, 50, 'nm', 4],[78.0, 0.38, '%', 1],[56.0, 1, 'increases', 2],[101.0, 3, 'K', 2]

SO
###Magnetotransport of SrIrO3 films on (110) DyScO3|A. K. Jaiswal,A. G. Zaitsev,R. Singh,R. Schneider,D. Fuchs###
(1650114, 1650115)
 Both, T<missing VAR> and Hc are very similar to the magneticordering temperature and coercivity of D<missing VAR>SO which strongly suggestssubstrate-induced mechanism as a reason for the anisotropic magnetotransport inthe SIO films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[384.0, 50, 'nm', 8],[237.0, 0.38, '%', 5],[101.0, 1, 'increases', 2],[56.0, 3, 'K', 2]

SIO
###Magnetotransport of SrIrO3 films on (110) DyScO3|A. K. Jaiswal,A. G. Zaitsev,R. Singh,R. Schneider,D. Fuchs###
(1650149, 1650151)
 Both, T<missing VAR> and Hc are very similar to the magneticordering temperature and coercivity of D<missing VAR>SO which strongly suggestssubstrate-induced mechanism as a reason for the anisotropic magnetotransport inthe SIO films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[419.0, 50, 'nm', 8],[272.0, 0.38, '%', 5],[136.0, 1, 'increases', 2],[91.0, 3, 'K', 2]

MgAl2O4
###Machine learning analysis of tunnel magnetoresistance of magnetic tunnel junctions with disordered MgAl2O4|Shenghong Ju,Yoshio Miura,Kaoru Yamamoto,Keisuke Masuda,Ken-ichi Uchida,Junichiro Shiomi###
(1650589, 1650593)
Machine learning analysis of tunnel magnetoresistance of magnetic tunnel junctions with disordered MgAl2O4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0.14285714285714285,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[409.0, 1, ',', 5]

O
###Machine learning analysis of tunnel magnetoresistance of magnetic tunnel junctions with disordered MgAl2O4|Shenghong Ju,Yoshio Miura,Kaoru Yamamoto,Keisuke Masuda,Ken-ichi Uchida,Junichiro Shiomi###
(1650624, 1650624)
 Through Bayesian optimization and the least absolute shrinkage and selectionoperator (L<missing VAR>ASSO) technique combined with first-principles calculations, weinvestigated the tunnel magnetoresistance (TMR) effect ofFe/disordered-MgAl2O4(M<missing VAR>AO)/Fe(001) magnetic tunnel junctions (MTJs) todetermine structures of disordered-M<missing VAR>AO that give large TMR ratios.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[378.0, 1, ',', 4]

Fe
###Machine learning analysis of tunnel magnetoresistance of magnetic tunnel junctions with disordered MgAl2O4|Shenghong Ju,Yoshio Miura,Kaoru Yamamoto,Keisuke Masuda,Ken-ichi Uchida,Junichiro Shiomi###
(1650662, 1650662)
 Through Bayesian optimization and the least absolute shrinkage and selectionoperator (L<missing VAR>ASSO) technique combined with first-principles calculations, weinvestigated the tunnel magnetoresistance (TMR) effect ofFe/disordered-MgAl2O4(M<missing VAR>AO)/Fe(001) magnetic tunnel junctions (MTJs) todetermine structures of disordered-M<missing VAR>AO that give large TMR ratios.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[340.0, 1, ',', 4]

O4
###Machine learning analysis of tunnel magnetoresistance of magnetic tunnel junctions with disordered MgAl2O4|Shenghong Ju,Yoshio Miura,Kaoru Yamamoto,Keisuke Masuda,Ken-ichi Uchida,Junichiro Shiomi###
(1650669, 1650670)
 Through Bayesian optimization and the least absolute shrinkage and selectionoperator (L<missing VAR>ASSO) technique combined with first-principles calculations, weinvestigated the tunnel magnetoresistance (TMR) effect ofFe/disordered-MgAl2O4(M<missing VAR>AO)/Fe(001) magnetic tunnel junctions (MTJs) todetermine structures of disordered-M<missing VAR>AO that give large TMR ratios.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[332.0, 1, ',', 4]

O
###Machine learning analysis of tunnel magnetoresistance of magnetic tunnel junctions with disordered MgAl2O4|Shenghong Ju,Yoshio Miura,Kaoru Yamamoto,Keisuke Masuda,Ken-ichi Uchida,Junichiro Shiomi###
(1650674, 1650674)
 Through Bayesian optimization and the least absolute shrinkage and selectionoperator (L<missing VAR>ASSO) technique combined with first-principles calculations, weinvestigated the tunnel magnetoresistance (TMR) effect ofFe/disordered-MgAl2O4(M<missing VAR>AO)/Fe(001) magnetic tunnel junctions (MTJs) todetermine structures of disordered-M<missing VAR>AO that give large TMR ratios.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[328.0, 1, ',', 4]

O
###Machine learning analysis of tunnel magnetoresistance of magnetic tunnel junctions with disordered MgAl2O4|Shenghong Ju,Yoshio Miura,Kaoru Yamamoto,Keisuke Masuda,Ken-ichi Uchida,Junichiro Shiomi###
(1650707, 1650707)
 Through Bayesian optimization and the least absolute shrinkage and selectionoperator (L<missing VAR>ASSO) technique combined with first-principles calculations, weinvestigated the tunnel magnetoresistance (TMR) effect ofFe/disordered-MgAl2O4(M<missing VAR>AO)/Fe(001) magnetic tunnel junctions (MTJs) todetermine structures of disordered-M<missing VAR>AO that give large TMR ratios.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[295.0, 1, ',', 4]

Al
###Machine learning analysis of tunnel magnetoresistance of magnetic tunnel junctions with disordered MgAl2O4|Shenghong Ju,Yoshio Miura,Kaoru Yamamoto,Keisuke Masuda,Ken-ichi Uchida,Junichiro Shiomi###
(1650808, 1650808)
 Characterization of the obtained structures suggestedthat the in-plane distance between two Al atoms plays an important role indetermining the TMR ratio.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[194.0, 1, ',', 2]

Al
###Machine learning analysis of tunnel magnetoresistance of magnetic tunnel junctions with disordered MgAl2O4|Shenghong Ju,Yoshio Miura,Kaoru Yamamoto,Keisuke Masuda,Ken-ichi Uchida,Junichiro Shiomi###
(1650838, 1650838)
 Since the Al-Al distance of disordered M<missing VAR>AOsignificantly affects the imaginary part of complex band structures, themajority-spin conductance of the Delta1 state in Fe/disordered-M<missing VAR>AO/Fe MTJsincreases with increasing in-plane Al-Al distance, leading to larger TMRratios.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 1, ',', 1]

Al
###Machine learning analysis of tunnel magnetoresistance of magnetic tunnel junctions with disordered MgAl2O4|Shenghong Ju,Yoshio Miura,Kaoru Yamamoto,Keisuke Masuda,Ken-ichi Uchida,Junichiro Shiomi###
(1650840, 1650840)
 Since the Al-Al distance of disordered M<missing VAR>AOsignificantly affects the imaginary part of complex band structures, themajority-spin conductance of the Delta1 state in Fe/disordered-M<missing VAR>AO/Fe MTJsincreases with increasing in-plane Al-Al distance, leading to larger TMRratios.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 1, ',', 1]

O
###Machine learning analysis of tunnel magnetoresistance of magnetic tunnel junctions with disordered MgAl2O4|Shenghong Ju,Yoshio Miura,Kaoru Yamamoto,Keisuke Masuda,Ken-ichi Uchida,Junichiro Shiomi###
(1650850, 1650850)
 Since the Al-Al distance of disordered M<missing VAR>AOsignificantly affects the imaginary part of complex band structures, themajority-spin conductance of the Delta1 state in Fe/disordered-M<missing VAR>AO/Fe MTJsincreases with increasing in-plane Al-Al distance, leading to larger TMRratios.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 1, ',', 1]

Fe
###Machine learning analysis of tunnel magnetoresistance of magnetic tunnel junctions with disordered MgAl2O4|Shenghong Ju,Yoshio Miura,Kaoru Yamamoto,Keisuke Masuda,Ken-ichi Uchida,Junichiro Shiomi###
(1650892, 1650892)
 Since the Al-Al distance of disordered M<missing VAR>AOsignificantly affects the imaginary part of complex band structures, themajority-spin conductance of the Delta1 state in Fe/disordered-M<missing VAR>AO/Fe MTJsincreases with increasing in-plane Al-Al distance, leading to larger TMRratios.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 1, ',', 1]

O/Fe
###Machine learning analysis of tunnel magnetoresistance of magnetic tunnel junctions with disordered MgAl2O4|Shenghong Ju,Yoshio Miura,Kaoru Yamamoto,Keisuke Masuda,Ken-ichi Uchida,Junichiro Shiomi###
(1650898, 1650900)
 Since the Al-Al distance of disordered M<missing VAR>AOsignificantly affects the imaginary part of complex band structures, themajority-spin conductance of the Delta1 state in Fe/disordered-M<missing VAR>AO/Fe MTJsincreases with increasing in-plane Al-Al distance, leading to larger TMRratios.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[102.0, 1, ',', 1]

Al
###Machine learning analysis of tunnel magnetoresistance of magnetic tunnel junctions with disordered MgAl2O4|Shenghong Ju,Yoshio Miura,Kaoru Yamamoto,Keisuke Masuda,Ken-ichi Uchida,Junichiro Shiomi###
(1650917, 1650917)
 Since the Al-Al distance of disordered M<missing VAR>AOsignificantly affects the imaginary part of complex band structures, themajority-spin conductance of the Delta1 state in Fe/disordered-M<missing VAR>AO/Fe MTJsincreases with increasing in-plane Al-Al distance, leading to larger TMRratios.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 1, ',', 1]

Al
###Machine learning analysis of tunnel magnetoresistance of magnetic tunnel junctions with disordered MgAl2O4|Shenghong Ju,Yoshio Miura,Kaoru Yamamoto,Keisuke Masuda,Ken-ichi Uchida,Junichiro Shiomi###
(1650919, 1650919)
 Since the Al-Al distance of disordered M<missing VAR>AOsignificantly affects the imaginary part of complex band structures, themajority-spin conductance of the Delta1 state in Fe/disordered-M<missing VAR>AO/Fe MTJsincreases with increasing in-plane Al-Al distance, leading to larger TMRratios.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 1, ',', 1]

Al
###Machine learning analysis of tunnel magnetoresistance of magnetic tunnel junctions with disordered MgAl2O4|Shenghong Ju,Yoshio Miura,Kaoru Yamamoto,Keisuke Masuda,Ken-ichi Uchida,Junichiro Shiomi###
(1650978, 1650978)
 Furthermore, we found that the TMR ratio tended to be large when theratio of the number of Al, Mg, and vacancies in the [001] plane was 211,indicating that the control of Al atomic positions is essential to enhancingthe TMR ratio in MTJs with disordered M<missing VAR>AO.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 1, ',', 0]

Mg
###Machine learning analysis of tunnel magnetoresistance of magnetic tunnel junctions with disordered MgAl2O4|Shenghong Ju,Yoshio Miura,Kaoru Yamamoto,Keisuke Masuda,Ken-ichi Uchida,Junichiro Shiomi###
(1650981, 1650981)
 Furthermore, we found that the TMR ratio tended to be large when theratio of the number of Al, Mg, and vacancies in the [001] plane was 211,indicating that the control of Al atomic positions is essential to enhancingthe TMR ratio in MTJs with disordered M<missing VAR>AO.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 1, ',', 0]

Al
###Machine learning analysis of tunnel magnetoresistance of magnetic tunnel junctions with disordered MgAl2O4|Shenghong Ju,Yoshio Miura,Kaoru Yamamoto,Keisuke Masuda,Ken-ichi Uchida,Junichiro Shiomi###
(1651016, 1651016)
 Furthermore, we found that the TMR ratio tended to be large when theratio of the number of Al, Mg, and vacancies in the [001] plane was 211,indicating that the control of Al atomic positions is essential to enhancingthe TMR ratio in MTJs with disordered M<missing VAR>AO.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 1, ',', 0]

O
###Machine learning analysis of tunnel magnetoresistance of magnetic tunnel junctions with disordered MgAl2O4|Shenghong Ju,Yoshio Miura,Kaoru Yamamoto,Keisuke Masuda,Ken-ichi Uchida,Junichiro Shiomi###
(1651051, 1651051)
 Furthermore, we found that the TMR ratio tended to be large when theratio of the number of Al, Mg, and vacancies in the [001] plane was 211,indicating that the control of Al atomic positions is essential to enhancingthe TMR ratio in MTJs with disordered M<missing VAR>AO.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 1, ',', 0]

PrAlSi
###Nonsaturating magnetoresistance, anomalous Hall effect, and magnetic quantum oscillations in ferromagnetic semimetal PrAlSi|Meng Lyu,Junsen Xiang,Zhenyu Mi,Hengcan Zhao,Zhen Wang,Enke Liu,Genfu Chen,Zhian Ren,Gang Li,Peijie Sun###
(1651146, 1651148)
Nonsaturating magnetoresistance, anomalous Hall effect, and magnetic quantum oscillations in ferromagnetic semimetal PrAlSi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 17.8, 'K', 2],[329.0, 100, 'K', 6],[365.0, 25, 'K', 7],[407.0, 18, 'T', 8],[410.0, 25, 'K', 8],[416.0, 33, 'T', 8],[419.0, 2, 'K', 8]

PrAlSi
###Nonsaturating magnetoresistance, anomalous Hall effect, and magnetic quantum oscillations in ferromagnetic semimetal PrAlSi|Meng Lyu,Junsen Xiang,Zhenyu Mi,Hengcan Zhao,Zhen Wang,Enke Liu,Genfu Chen,Zhian Ren,Gang Li,Peijie Sun###
(1651188, 1651190)
 We report a comprehensive investigation of the structural, magnetic,transport and thermodynamic properties of a single crystal PrAlSi, incomparison to its nonmagnetic analogue LaAlSi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 17.8, 'K', 1],[287.0, 100, 'K', 5],[323.0, 25, 'K', 6],[365.0, 18, 'T', 7],[368.0, 25, 'K', 7],[374.0, 33, 'T', 7],[377.0, 2, 'K', 7]

LaAlSi
###Nonsaturating magnetoresistance, anomalous Hall effect, and magnetic quantum oscillations in ferromagnetic semimetal PrAlSi|Meng Lyu,Junsen Xiang,Zhenyu Mi,Hengcan Zhao,Zhen Wang,Enke Liu,Genfu Chen,Zhian Ren,Gang Li,Peijie Sun###
(1651206, 1651208)
 We report a comprehensive investigation of the structural, magnetic,transport and thermodynamic properties of a single crystal PrAlSi, incomparison to its nonmagnetic analogue LaAlSi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 17.8, 'K', 1],[269.0, 100, 'K', 5],[305.0, 25, 'K', 6],[347.0, 18, 'T', 7],[350.0, 25, 'K', 7],[356.0, 33, 'T', 7],[359.0, 2, 'K', 7]

PrAlSi
###Nonsaturating magnetoresistance, anomalous Hall effect, and magnetic quantum oscillations in ferromagnetic semimetal PrAlSi|Meng Lyu,Junsen Xiang,Zhenyu Mi,Hengcan Zhao,Zhen Wang,Enke Liu,Genfu Chen,Zhian Ren,Gang Li,Peijie Sun###
(1651211, 1651213)
 PrAlSi exhibits a ferromagnetictransition at T<missing VAR>C  17.8 K which, however, is followed by two weak phasetransitions at lower temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 17.8, 'K', 0],[264.0, 100, 'K', 4],[300.0, 25, 'K', 5],[342.0, 18, 'T', 6],[345.0, 25, 'K', 6],[351.0, 33, 'T', 6],[354.0, 2, 'K', 6]

C
###Nonsaturating magnetoresistance, anomalous Hall effect, and magnetic quantum oscillations in ferromagnetic semimetal PrAlSi|Meng Lyu,Junsen Xiang,Zhenyu Mi,Hengcan Zhao,Zhen Wang,Enke Liu,Genfu Chen,Zhian Ren,Gang Li,Peijie Sun###
(1651227, 1651227)
 PrAlSi exhibits a ferromagnetictransition at T<missing VAR>C  17.8 K which, however, is followed by two weak phasetransitions at lower temperatures.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 17.8, 'K', 0],[250.0, 100, 'K', 4],[286.0, 25, 'K', 5],[328.0, 18, 'T', 6],[331.0, 25, 'K', 6],[337.0, 33, 'T', 6],[340.0, 2, 'K', 6]

C
###Nonsaturating magnetoresistance, anomalous Hall effect, and magnetic quantum oscillations in ferromagnetic semimetal PrAlSi|Meng Lyu,Junsen Xiang,Zhenyu Mi,Hengcan Zhao,Zhen Wang,Enke Liu,Genfu Chen,Zhian Ren,Gang Li,Peijie Sun###
(1651299, 1651299)
 Based on the combined dc and ac magneticsusceptibility measurements, we propose the two reentrant magnetic phases belowT<missing VAR>C to be spin glasses or ferromagnetic cluster glasses.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 17.8, 'K', 1],[178.0, 100, 'K', 3],[214.0, 25, 'K', 4],[256.0, 18, 'T', 5],[259.0, 25, 'K', 5],[265.0, 33, 'T', 5],[268.0, 2, 'K', 5]

Pr3
###Nonsaturating magnetoresistance, anomalous Hall effect, and magnetic quantum oscillations in ferromagnetic semimetal PrAlSi|Meng Lyu,Junsen Xiang,Zhenyu Mi,Hengcan Zhao,Zhen Wang,Enke Liu,Genfu Chen,Zhian Ren,Gang Li,Peijie Sun###
(1651467, 1651468)
 Specific-heat measurements indicate a non-Kramers doubletground state and a relatively low crystal electric field splitting of thePr3 multiplets of less than 100 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[238.0, 17.8, 'K', 4],[9.0, 100, 'K', 0],[45.0, 25, 'K', 1],[87.0, 18, 'T', 2],[90.0, 25, 'K', 2],[96.0, 33, 'T', 2],[99.0, 2, 'K', 2]

LaAlSi
###Nonsaturating magnetoresistance, anomalous Hall effect, and magnetic quantum oscillations in ferromagnetic semimetal PrAlSi|Meng Lyu,Junsen Xiang,Zhenyu Mi,Hengcan Zhao,Zhen Wang,Enke Liu,Genfu Chen,Zhian Ren,Gang Li,Peijie Sun###
(1651495, 1651497)
 Shubnikov-de Hass oscillations areabsent in LaAlSi, whereas they are clearly observed below about 25 K in PrAlSi,with an unusual temperature dependence of the dominating oscillation frequencyF.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[266.0, 17.8, 'K', 5],[18.0, 100, 'K', 1],[16.0, 25, 'K', 0],[58.0, 18, 'T', 1],[61.0, 25, 'K', 1],[67.0, 33, 'T', 1],[70.0, 2, 'K', 1]

PrAlSi
###Nonsaturating magnetoresistance, anomalous Hall effect, and magnetic quantum oscillations in ferromagnetic semimetal PrAlSi|Meng Lyu,Junsen Xiang,Zhenyu Mi,Hengcan Zhao,Zhen Wang,Enke Liu,Genfu Chen,Zhian Ren,Gang Li,Peijie Sun###
(1651517, 1651519)
 Shubnikov-de Hass oscillations areabsent in LaAlSi, whereas they are clearly observed below about 25 K in PrAlSi,with an unusual temperature dependence of the dominating oscillation frequencyF.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[288.0, 17.8, 'K', 5],[40.0, 100, 'K', 1],[4.0, 25, 'K', 0],[36.0, 18, 'T', 1],[39.0, 25, 'K', 1],[45.0, 33, 'T', 1],[48.0, 2, 'K', 1]

F
###Nonsaturating magnetoresistance, anomalous Hall effect, and magnetic quantum oscillations in ferromagnetic semimetal PrAlSi|Meng Lyu,Junsen Xiang,Zhenyu Mi,Hengcan Zhao,Zhen Wang,Enke Liu,Genfu Chen,Zhian Ren,Gang Li,Peijie Sun###
(1651544, 1651544)
 Shubnikov-de Hass oscillations areabsent in LaAlSi, whereas they are clearly observed below about 25 K in PrAlSi,with an unusual temperature dependence of the dominating oscillation frequencyF.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[315.0, 17.8, 'K', 5],[67.0, 100, 'K', 1],[31.0, 25, 'K', 0],[11.0, 18, 'T', 1],[14.0, 25, 'K', 1],[20.0, 33, 'T', 1],[23.0, 2, 'K', 1]

F
###Nonsaturating magnetoresistance, anomalous Hall effect, and magnetic quantum oscillations in ferromagnetic semimetal PrAlSi|Meng Lyu,Junsen Xiang,Zhenyu Mi,Hengcan Zhao,Zhen Wang,Enke Liu,Genfu Chen,Zhian Ren,Gang Li,Peijie Sun###
(1651553, 1651553)
 It increases from F  18 T at 25 K to F  33 T at 2 K, hinting at anemerging Fermi pocket upon cooling into the ordered phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[324.0, 17.8, 'K', 6],[76.0, 100, 'K', 2],[40.0, 25, 'K', 1],[2.0, 18, 'T', 0],[5.0, 25, 'K', 0],[11.0, 33, 'T', 0],[14.0, 2, 'K', 0]

F
###Nonsaturating magnetoresistance, anomalous Hall effect, and magnetic quantum oscillations in ferromagnetic semimetal PrAlSi|Meng Lyu,Junsen Xiang,Zhenyu Mi,Hengcan Zhao,Zhen Wang,Enke Liu,Genfu Chen,Zhian Ren,Gang Li,Peijie Sun###
(1651562, 1651562)
 It increases from F  18 T at 25 K to F  33 T at 2 K, hinting at anemerging Fermi pocket upon cooling into the ordered phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[333.0, 17.8, 'K', 6],[85.0, 100, 'K', 2],[49.0, 25, 'K', 1],[7.0, 18, 'T', 0],[4.0, 25, 'K', 0],[2.0, 33, 'T', 0],[5.0, 2, 'K', 0]

PrAlSi
###Nonsaturating magnetoresistance, anomalous Hall effect, and magnetic quantum oscillations in ferromagnetic semimetal PrAlSi|Meng Lyu,Junsen Xiang,Zhenyu Mi,Hengcan Zhao,Zhen Wang,Enke Liu,Genfu Chen,Zhian Ren,Gang Li,Peijie Sun###
(1651605, 1651607)
 These resultssuggest that PrAlSi is a new system where a small Fermi pocket of likelyrelativistic fermions is strongly coupled to magnetism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[376.0, 17.8, 'K', 7],[128.0, 100, 'K', 3],[92.0, 25, 'K', 2],[50.0, 18, 'T', 1],[47.0, 25, 'K', 1],[41.0, 33, 'T', 1],[38.0, 2, 'K', 1]

LaMnO3/SrIrO3
###Tailoring magnetic order via atomically stacking 3d/5d electrons|Ke Huang,Liang Wu,Maoyu Wang,Nyayabanta Swain,M. Motapothula,Yongzheng Luo,Kun Han,Mingfeng Chen,Chen Ye,Allen Jian Yang,Huan Xu,Dong-chen Qi,Alpha T. N'Diaye,Christos Panagopoulos,Daniel Primetzhofer,Lei Shen,Pinaki Sengupta,Jing Ma,Zhenxing Feng,Ce-Wen Nan,X. Renshaw Wang###
(1651834, 1651842)
 Wechose a unique polar-nonpolar LaMnO3/SrIrO3 superlattice because Mn (3d)/Ir(5d) oxides exhibit rich magnetic behaviors and strong spin-orbit couplingthrough the entanglement of their 3d and 5d electrons.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[135.0, 3, 'd', 3],[51.0, 3, 'd', 0],[54.0, 5, 'd', 0],[237.0, 3, 'd', 3]

Mn
###Tailoring magnetic order via atomically stacking 3d/5d electrons|Ke Huang,Liang Wu,Maoyu Wang,Nyayabanta Swain,M. Motapothula,Yongzheng Luo,Kun Han,Mingfeng Chen,Chen Ye,Allen Jian Yang,Huan Xu,Dong-chen Qi,Alpha T. N'Diaye,Christos Panagopoulos,Daniel Primetzhofer,Lei Shen,Pinaki Sengupta,Jing Ma,Zhenxing Feng,Ce-Wen Nan,X. Renshaw Wang###
(1651848, 1651848)
 Wechose a unique polar-nonpolar LaMnO3/SrIrO3 superlattice because Mn (3d)/Ir(5d) oxides exhibit rich magnetic behaviors and strong spin-orbit couplingthrough the entanglement of their 3d and 5d electrons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 3, 'd', 3],[45.0, 3, 'd', 0],[48.0, 5, 'd', 0],[231.0, 3, 'd', 3]

Ir
###Tailoring magnetic order via atomically stacking 3d/5d electrons|Ke Huang,Liang Wu,Maoyu Wang,Nyayabanta Swain,M. Motapothula,Yongzheng Luo,Kun Han,Mingfeng Chen,Chen Ye,Allen Jian Yang,Huan Xu,Dong-chen Qi,Alpha T. N'Diaye,Christos Panagopoulos,Daniel Primetzhofer,Lei Shen,Pinaki Sengupta,Jing Ma,Zhenxing Feng,Ce-Wen Nan,X. Renshaw Wang###
(1651855, 1651855)
 Wechose a unique polar-nonpolar LaMnO3/SrIrO3 superlattice because Mn (3d)/Ir(5d) oxides exhibit rich magnetic behaviors and strong spin-orbit couplingthrough the entanglement of their 3d and 5d electrons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 3, 'd', 3],[38.0, 3, 'd', 0],[41.0, 5, 'd', 0],[224.0, 3, 'd', 3]

LaMnO3/SrIrO3
###Tailoring magnetic order via atomically stacking 3d/5d electrons|Ke Huang,Liang Wu,Maoyu Wang,Nyayabanta Swain,M. Motapothula,Yongzheng Luo,Kun Han,Mingfeng Chen,Chen Ye,Allen Jian Yang,Huan Xu,Dong-chen Qi,Alpha T. N'Diaye,Christos Panagopoulos,Daniel Primetzhofer,Lei Shen,Pinaki Sengupta,Jing Ma,Zhenxing Feng,Ce-Wen Nan,X. Renshaw Wang###
(1651998, 1652006)
 We were able tothen effectively modify the magnetization, tilt of the ferromagnetic easy axis,and symmetry transition of the anisotropic magnetoresistance of theLaMnO3/SrIrO3 superlattice by introducing additional Mn (3d) and Ir (5d)interfaces.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[299.0, 3, 'd', 5],[105.0, 3, 'd', 2],[102.0, 5, 'd', 2],[73.0, 3, 'd', 1]

Mn
###Tailoring magnetic order via atomically stacking 3d/5d electrons|Ke Huang,Liang Wu,Maoyu Wang,Nyayabanta Swain,M. Motapothula,Yongzheng Luo,Kun Han,Mingfeng Chen,Chen Ye,Allen Jian Yang,Huan Xu,Dong-chen Qi,Alpha T. N'Diaye,Christos Panagopoulos,Daniel Primetzhofer,Lei Shen,Pinaki Sengupta,Jing Ma,Zhenxing Feng,Ce-Wen Nan,X. Renshaw Wang###
(1652016, 1652016)
 We were able tothen effectively modify the magnetization, tilt of the ferromagnetic easy axis,and symmetry transition of the anisotropic magnetoresistance of theLaMnO3/SrIrO3 superlattice by introducing additional Mn (3d) and Ir (5d)interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[317.0, 3, 'd', 5],[123.0, 3, 'd', 2],[120.0, 5, 'd', 2],[63.0, 3, 'd', 1]

Ir
###Tailoring magnetic order via atomically stacking 3d/5d electrons|Ke Huang,Liang Wu,Maoyu Wang,Nyayabanta Swain,M. Motapothula,Yongzheng Luo,Kun Han,Mingfeng Chen,Chen Ye,Allen Jian Yang,Huan Xu,Dong-chen Qi,Alpha T. N'Diaye,Christos Panagopoulos,Daniel Primetzhofer,Lei Shen,Pinaki Sengupta,Jing Ma,Zhenxing Feng,Ce-Wen Nan,X. Renshaw Wang###
(1652025, 1652025)
 We were able tothen effectively modify the magnetization, tilt of the ferromagnetic easy axis,and symmetry transition of the anisotropic magnetoresistance of theLaMnO3/SrIrO3 superlattice by introducing additional Mn (3d) and Ir (5d)interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[326.0, 3, 'd', 5],[132.0, 3, 'd', 2],[129.0, 5, 'd', 2],[54.0, 3, 'd', 1]

F
###Magnetism at iridate/manganite interface: influence of strong spin-orbit interaction|G. A. Ovsyannikov,T. A Shaikhulov,V. V. Demidov,K. L. Stankevich,Yu. Khaydukov,N. V. Andreev###
(1652250, 1652250)
 The complex investigation of dc transport and magnetic properties of theepitaxial manganite/iridate heterostructure was carried out by mean of X<missing VAR>-ray(XRD), dc resistance measurements, ferromagnetic resonance (FMR) and polarizedneutron reflectivity (PNR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[180.0, 2005, ',', 3],[287.0, 26, 'degree', 4],[309.0, 10, 'K', 4]

PN
###Magnetism at iridate/manganite interface: influence of strong spin-orbit interaction|G. A. Ovsyannikov,T. A Shaikhulov,V. V. Demidov,K. L. Stankevich,Yu. Khaydukov,N. V. Andreev###
(1652265, 1652266)
 The complex investigation of dc transport and magnetic properties of theepitaxial manganite/iridate heterostructure was carried out by mean of X<missing VAR>-ray(XRD), dc resistance measurements, ferromagnetic resonance (FMR) and polarizedneutron reflectivity (PNR).
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 2005, ',', 3],[271.0, 26, 'degree', 4],[293.0, 10, 'K', 4]

IP
###Magnetism at iridate/manganite interface: influence of strong spin-orbit interaction|G. A. Ovsyannikov,T. A Shaikhulov,V. V. Demidov,K. L. Stankevich,Yu. Khaydukov,N. V. Andreev###
(1652423, 1652424)
 This isconfirmed by the first principles calculations based on density functionaltheory [Sayantika Bhowal, and Sashi Satpathy AIP Conference Proceedings 2005,020007 (2018)] that show the charge transfer at the interface from thehalf-filled spin-orbit entangled Jeff  1/2 state of the iridate to the empty e<missing VAR>states of manganite.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 2005, ',', 0],[113.0, 26, 'degree', 1],[135.0, 10, 'K', 1]

K
###Magnetism at iridate/manganite interface: influence of strong spin-orbit interaction|G. A. Ovsyannikov,T. A Shaikhulov,V. V. Demidov,K. L. Stankevich,Yu. Khaydukov,N. V. Andreev###
(1652576, 1652576)
 Additional ferromagneticstate appearing at T<missing VAR><100K indicate on emergence of ferromagnetism in the thin(10 nm) paramagnetic SIO film close to the interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 2005, ',', 2],[39.0, 26, 'degree', 1],[17.0, 10, 'K', 1]

SIO
###Magnetism at iridate/manganite interface: influence of strong spin-orbit interaction|G. A. Ovsyannikov,T. A Shaikhulov,V. V. Demidov,K. L. Stankevich,Yu. Khaydukov,N. V. Andreev###
(1652603, 1652605)
 Additional ferromagneticstate appearing at T<missing VAR><100K indicate on emergence of ferromagnetism in the thin(10 nm) paramagnetic SIO film close to the interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 2005, ',', 2],[66.0, 26, 'degree', 1],[44.0, 10, 'K', 1]

SIO
###Magnetism at iridate/manganite interface: influence of strong spin-orbit interaction|G. A. Ovsyannikov,T. A Shaikhulov,V. V. Demidov,K. L. Stankevich,Yu. Khaydukov,N. V. Andreev###
(1652637, 1652639)
 We have measured the dcvoltage aroused on the SIO film caused by spin pumping and the anisotropicmagnetoresistance in the heterostructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[207.0, 2005, ',', 3],[100.0, 26, 'degree', 2],[78.0, 10, 'K', 2]

Mn
###Electronic and magnetic properties of 3$d$ transition-metal adatoms on Mn/W(110)|Mara Gutzeit,Soumyajyoti Haldar,Stefan Heinze###
(1652749, 1652749)
 Using density functional theory, we investigate the electronic and magneticproperties of 3d<missing VAR> transition-metal adatoms adsorbed on a monolayer of Mn onW(110).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[315.0, 73, '%', 6],[344.0, 27, '%', 6]

Mn
###Electronic and magnetic properties of 3$d$ transition-metal adatoms on Mn/W(110)|Mara Gutzeit,Soumyajyoti Haldar,Stefan Heinze###
(1652805, 1652805)
 Mn/W(110) has a noncollinear cycloidal spin-spiral ground state with anangle of 173circ between magnetic moments of adjacent Mn rows.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[259.0, 73, '%', 5],[288.0, 27, '%', 5]

S
###Electronic and magnetic properties of 3$d$ transition-metal adatoms on Mn/W(110)|Mara Gutzeit,Soumyajyoti Haldar,Stefan Heinze###
(1652891, 1652891)
Therefore, this surface is ideally suited for manipulating the spin directionof individual atoms and exploring their magnetic properties using scanningtunneling microscopy (STM).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 73, '%', 3],[202.0, 27, '%', 3]

V
###Electronic and magnetic properties of 3$d$ transition-metal adatoms on Mn/W(110)|Mara Gutzeit,Soumyajyoti Haldar,Stefan Heinze###
(1652901, 1652901)
 The adsorbed V and Cr transition-metal adatomscouple antiferromagnetically to the nearest neighbor Mn atom of Mn monolayerwhile Mn, Fe, Co, and Ni couple ferromagnetically.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 73, '%', 2],[192.0, 27, '%', 2]

Cr
###Electronic and magnetic properties of 3$d$ transition-metal adatoms on Mn/W(110)|Mara Gutzeit,Soumyajyoti Haldar,Stefan Heinze###
(1652905, 1652905)
 The adsorbed V and Cr transition-metal adatomscouple antiferromagnetically to the nearest neighbor Mn atom of Mn monolayerwhile Mn, Fe, Co, and Ni couple ferromagnetically.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[159.0, 73, '%', 2],[188.0, 27, '%', 2]

Mn
###Electronic and magnetic properties of 3$d$ transition-metal adatoms on Mn/W(110)|Mara Gutzeit,Soumyajyoti Haldar,Stefan Heinze###
(1652926, 1652926)
 The adsorbed V and Cr transition-metal adatomscouple antiferromagnetically to the nearest neighbor Mn atom of Mn monolayerwhile Mn, Fe, Co, and Ni couple ferromagnetically.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 73, '%', 2],[167.0, 27, '%', 2]

Mn
###Electronic and magnetic properties of 3$d$ transition-metal adatoms on Mn/W(110)|Mara Gutzeit,Soumyajyoti Haldar,Stefan Heinze###
(1652932, 1652932)
 The adsorbed V and Cr transition-metal adatomscouple antiferromagnetically to the nearest neighbor Mn atom of Mn monolayerwhile Mn, Fe, Co, and Ni couple ferromagnetically.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 73, '%', 2],[161.0, 27, '%', 2]

Mn
###Electronic and magnetic properties of 3$d$ transition-metal adatoms on Mn/W(110)|Mara Gutzeit,Soumyajyoti Haldar,Stefan Heinze###
(1652939, 1652939)
 The adsorbed V and Cr transition-metal adatomscouple antiferromagnetically to the nearest neighbor Mn atom of Mn monolayerwhile Mn, Fe, Co, and Ni couple ferromagnetically.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 73, '%', 2],[154.0, 27, '%', 2]

Fe
###Electronic and magnetic properties of 3$d$ transition-metal adatoms on Mn/W(110)|Mara Gutzeit,Soumyajyoti Haldar,Stefan Heinze###
(1652942, 1652942)
 The adsorbed V and Cr transition-metal adatomscouple antiferromagnetically to the nearest neighbor Mn atom of Mn monolayerwhile Mn, Fe, Co, and Ni couple ferromagnetically.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 73, '%', 2],[151.0, 27, '%', 2]

Co
###Electronic and magnetic properties of 3$d$ transition-metal adatoms on Mn/W(110)|Mara Gutzeit,Soumyajyoti Haldar,Stefan Heinze###
(1652945, 1652945)
 The adsorbed V and Cr transition-metal adatomscouple antiferromagnetically to the nearest neighbor Mn atom of Mn monolayerwhile Mn, Fe, Co, and Ni couple ferromagnetically.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 73, '%', 2],[148.0, 27, '%', 2]

Ni
###Electronic and magnetic properties of 3$d$ transition-metal adatoms on Mn/W(110)|Mara Gutzeit,Soumyajyoti Haldar,Stefan Heinze###
(1652950, 1652950)
 The adsorbed V and Cr transition-metal adatomscouple antiferromagnetically to the nearest neighbor Mn atom of Mn monolayerwhile Mn, Fe, Co, and Ni couple ferromagnetically.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 73, '%', 2],[143.0, 27, '%', 2]

Mn
###Electronic and magnetic properties of 3$d$ transition-metal adatoms on Mn/W(110)|Mara Gutzeit,Soumyajyoti Haldar,Stefan Heinze###
(1653130, 1653130)
 We conclude that such large valuesstem from the strong hybridization between the adatoms and the Mn atoms of themonolayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 73, '%', 1],[37.0, 27, '%', 1]

S
###Electronic and magnetic properties of 3$d$ transition-metal adatoms on Mn/W(110)|Mara Gutzeit,Soumyajyoti Haldar,Stefan Heinze###
(1653166, 1653166)
 Furthermore, identification of spin orientations of the adatom usingspin-polarized STM is only possible for Co and V adatoms.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 73, '%', 2],[73.0, 27, '%', 2]

Co
###Electronic and magnetic properties of 3$d$ transition-metal adatoms on Mn/W(110)|Mara Gutzeit,Soumyajyoti Haldar,Stefan Heinze###
(1653178, 1653178)
 Furthermore, identification of spin orientations of the adatom usingspin-polarized STM is only possible for Co and V adatoms.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 73, '%', 2],[85.0, 27, '%', 2]

V
###Electronic and magnetic properties of 3$d$ transition-metal adatoms on Mn/W(110)|Mara Gutzeit,Soumyajyoti Haldar,Stefan Heinze###
(1653182, 1653182)
 Furthermore, identification of spin orientations of the adatom usingspin-polarized STM is only possible for Co and V adatoms.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 73, '%', 2],[89.0, 27, '%', 2]

Cr2Ge2Te6
###Tailoring Magnetic Anisotropy in Cr$_2$Ge$_2$Te$_6$ by Electrostatic Gating|Ivan. A. Verzhbitskiy,Hidekazu Kurebayashi,Haixia Cheng,Jun Zhou,Safe Khan,Yuan Ping Feng,Goki Eda###
(1653203, 1653208)
Tailoring Magnetic Anisotropy in Cr2Ge2Te6 by Electrostatic Gating.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[196.0, 200, 'K', 3],[219.0, 61, 'K', 3]

Cr2Ge2Te6
###Tailoring Magnetic Anisotropy in Cr$_2$Ge$_2$Te$_6$ by Electrostatic Gating|Ivan. A. Verzhbitskiy,Hidekazu Kurebayashi,Haixia Cheng,Jun Zhou,Safe Khan,Yuan Ping Feng,Goki Eda###
(1653296, 1653301)
 Here, we report observation of electrically modulated magneticphase transition and magnetic anisotropy in thin crystal of Cr2Ge2Te6(CGT), a layered ferromagnetic semiconductor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 200, 'K', 1],[126.0, 61, 'K', 1]

C
###Tailoring Magnetic Anisotropy in Cr$_2$Ge$_2$Te$_6$ by Electrostatic Gating|Ivan. A. Verzhbitskiy,Hidekazu Kurebayashi,Haixia Cheng,Jun Zhou,Safe Khan,Yuan Ping Feng,Goki Eda###
(1653305, 1653305)
 Here, we report observation of electrically modulated magneticphase transition and magnetic anisotropy in thin crystal of Cr2Ge2Te6(CGT), a layered ferromagnetic semiconductor.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 200, 'K', 1],[122.0, 61, 'K', 1]

C
###Tailoring Magnetic Anisotropy in Cr$_2$Ge$_2$Te$_6$ by Electrostatic Gating|Ivan. A. Verzhbitskiy,Hidekazu Kurebayashi,Haixia Cheng,Jun Zhou,Safe Khan,Yuan Ping Feng,Goki Eda###
(1653344, 1653344)
 We show that heavilyelectron-doped (sim 1014 cm-2) CGT in an electric double-layertransistor device is found to exhibit hysteresis in magnetoresistance (MR), aclear signature of ferromagnetism, at temperatures up to above 200 K, which issignificantly higher than the known Curie temperature of 61 K for an undopedmaterial.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 200, 'K', 0],[83.0, 61, 'K', 0]

C
###Tailoring Magnetic Anisotropy in Cr$_2$Ge$_2$Te$_6$ by Electrostatic Gating|Ivan. A. Verzhbitskiy,Hidekazu Kurebayashi,Haixia Cheng,Jun Zhou,Safe Khan,Yuan Ping Feng,Goki Eda###
(1653501, 1653501)
 Additionally, angle-dependent MR measurements reveal that themagnetic easy axis of this new ground state lies within the layer plane instark contrast to the case of undoped CGT, whose easy axis points in theout-of-plane direction.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 200, 'K', 1],[74.0, 61, 'K', 1]

In
###Resistivity minimum in diluted metallic magnets|Zhentao Wang,Cristian D. Batista###
(1654159, 1654159)
 In a previous work [Z<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 117, ',', 11],[183.0, 2, 'D', 12]

K
###Resistivity minimum in diluted metallic magnets|Zhentao Wang,Cristian D. Batista###
(1654174, 1654174)
 Wang, K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 117, ',', 10],[168.0, 2, 'D', 11]

W
###Resistivity minimum in diluted metallic magnets|Zhentao Wang,Cristian D. Batista###
(1654184, 1654184)
-W.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 117, ',', 8],[158.0, 2, 'D', 9]

C
###Resistivity minimum in diluted metallic magnets|Zhentao Wang,Cristian D. Batista###
(1654201, 1654201)
 Maslov, and C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 117, ',', 5],[141.0, 2, 'D', 6]

Y
###Resistivity minimum in diluted metallic magnets|Zhentao Wang,Cristian D. Batista###
(1654251, 1654251)
 117, 206601(2016)], we demonstrated that the Ruderman-Kittel-Kasuya-Yosida (R<missing VAR>KKY)interaction can produce a classical spin liquid state at finite temperature,whose resistivity increases with decreasing temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 117, ',', 0],[91.0, 2, 'D', 1]

KKY
###Resistivity minimum in diluted metallic magnets|Zhentao Wang,Cristian D. Batista###
(1654331, 1654333)
 The classical spinliquid exists over a relatively large temperature window because of thefrustrated nature of the R<missing VAR>KKY interaction produced by a 2D electron gas.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 117, ',', 1],[9.0, 2, 'D', 0]

In
###Resistivity minimum in diluted metallic magnets|Zhentao Wang,Cristian D. Batista###
(1654349, 1654349)
 Inthis work, we investigate the robustness of the R<missing VAR>KKY-induced resistivity upturnagainst site dilution, which provides an alternative, and more robust, way ofstabilizing the classical spin liquid state down to T<missing VAR>0.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 117, ',', 2],[7.0, 2, 'D', 1]

KKY
###Resistivity minimum in diluted metallic magnets|Zhentao Wang,Cristian D. Batista###
(1654370, 1654372)
 Inthis work, we investigate the robustness of the R<missing VAR>KKY-induced resistivity upturnagainst site dilution, which provides an alternative, and more robust, way ofstabilizing the classical spin liquid state down to T<missing VAR>0.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 117, ',', 2],[28.0, 2, 'D', 1]

La1.67Sr0.33NiO4
###Giant electron-phonon coupling of the breathing plane oxygen phonons in the dynamic stripe phase of La$_{1.67}$Sr$_{0.33}$NiO$_4$|A. M. Merritt,A. D. Christianson,A. Banerjee,G. D. Gu,A. S. Mishchenko,D. Reznik###
(1654556, 1654562)
Giant electron-phonon coupling of the breathing plane oxygen phonons in the dynamic stripe phase of La1.67Sr0.33NiO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0.047142857142857146,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La1.7Sr0.3NiO4
###Giant electron-phonon coupling of the breathing plane oxygen phonons in the dynamic stripe phase of La$_{1.67}$Sr$_{0.33}$NiO$_4$|A. M. Merritt,A. D. Christianson,A. Banerjee,G. D. Gu,A. S. Mishchenko,D. Reznik###
(1654618, 1654624)
 La1.7Sr0.3NiO4 (L<missing VAR>SNO) is a classic example of such amaterial.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0.04285714285714286,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.24285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Giant electron-phonon coupling of the breathing plane oxygen phonons in the dynamic stripe phase of La$_{1.67}$Sr$_{0.33}$NiO$_4$|A. M. Merritt,A. D. Christianson,A. Banerjee,G. D. Gu,A. S. Mishchenko,D. Reznik###
(1654630, 1654630)
 La1.7Sr0.3NiO4 (L<missing VAR>SNO) is a classic example of such amaterial.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Giant electron-phonon coupling of the breathing plane oxygen phonons in the dynamic stripe phase of La$_{1.67}$Sr$_{0.33}$NiO$_4$|A. M. Merritt,A. D. Christianson,A. Banerjee,G. D. Gu,A. S. Mishchenko,D. Reznik###
(1654651, 1654651)
 At low temperatures holes introduced via substitution of La by Srsegregate into lines to form boundaries between magnetically ordered domains inthe form of stripes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La
###Giant electron-phonon coupling of the breathing plane oxygen phonons in the dynamic stripe phase of La$_{1.67}$Sr$_{0.33}$NiO$_4$|A. M. Merritt,A. D. Christianson,A. Banerjee,G. D. Gu,A. S. Mishchenko,D. Reznik###
(1654667, 1654667)
 At low temperatures holes introduced via substitution of La by Srsegregate into lines to form boundaries between magnetically ordered domains inthe form of stripes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr
###Giant electron-phonon coupling of the breathing plane oxygen phonons in the dynamic stripe phase of La$_{1.67}$Sr$_{0.33}$NiO$_4$|A. M. Merritt,A. D. Christianson,A. Banerjee,G. D. Gu,A. S. Mishchenko,D. Reznik###
(1654671, 1654671)
 At low temperatures holes introduced via substitution of La by Srsegregate into lines to form boundaries between magnetically ordered domains inthe form of stripes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SNO
###Giant electron-phonon coupling of the breathing plane oxygen phonons in the dynamic stripe phase of La$_{1.67}$Sr$_{0.33}$NiO$_4$|A. M. Merritt,A. D. Christianson,A. Banerjee,G. D. Gu,A. S. Mishchenko,D. Reznik###
(1654724, 1654726)
 The stripes become dynamic at high temperatures, but L<missing VAR>SNOremains insulating presumably because an interplay between magneticcorrelations and electron-phonon coupling localizes charge carriers.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SNO
###Giant electron-phonon coupling of the breathing plane oxygen phonons in the dynamic stripe phase of La$_{1.67}$Sr$_{0.33}$NiO$_4$|A. M. Merritt,A. D. Christianson,A. Banerjee,G. D. Gu,A. S. Mishchenko,D. Reznik###
(1654817, 1654819)
 We searched for electron-phononanomalies in L<missing VAR>SNO by inelastic neutron scattering.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Giant electron-phonon coupling of the breathing plane oxygen phonons in the dynamic stripe phase of La$_{1.67}$Sr$_{0.33}$NiO$_4$|A. M. Merritt,A. D. Christianson,A. Banerjee,G. D. Gu,A. S. Mishchenko,D. Reznik###
(1654839, 1654839)
 Giant renormalization ofplane Ni-O bond-stretching modes that modulate the volume around Ni appears onentering the dynamic charge stripe phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Giant electron-phonon coupling of the breathing plane oxygen phonons in the dynamic stripe phase of La$_{1.67}$Sr$_{0.33}$NiO$_4$|A. M. Merritt,A. D. Christianson,A. Banerjee,G. D. Gu,A. S. Mishchenko,D. Reznik###
(1654841, 1654841)
 Giant renormalization ofplane Ni-O bond-stretching modes that modulate the volume around Ni appears onentering the dynamic charge stripe phase.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Giant electron-phonon coupling of the breathing plane oxygen phonons in the dynamic stripe phase of La$_{1.67}$Sr$_{0.33}$NiO$_4$|A. M. Merritt,A. D. Christianson,A. Banerjee,G. D. Gu,A. S. Mishchenko,D. Reznik###
(1654859, 1654859)
 Giant renormalization ofplane Ni-O bond-stretching modes that modulate the volume around Ni appears onentering the dynamic charge stripe phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Giant electron-phonon coupling of the breathing plane oxygen phonons in the dynamic stripe phase of La$_{1.67}$Sr$_{0.33}$NiO$_4$|A. M. Merritt,A. D. Christianson,A. Banerjee,G. D. Gu,A. S. Mishchenko,D. Reznik###
(1654999, 1654999)
 We argue that thisfeature sets electron-phonon coupling in nickelates apart from that in cuprateswhere breathing phonons are not overdamped and point out remarkablesimilarities with the colossal magnetoresistance (CMR) manganites.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Ion-Irradiation-Induced Cobalt/Cobalt Oxide Heterostructures: Printing 3D Interfaces|Oğuz Yıldırım,Donovan Hilliard,Sri Sai Phani Kanth Arekapudi,Ciarán Fowley,Hamza Cansever,Leopold Koch,Lakshmi Ramasubramanian,Shengqiang Zhou,Roman Böttger,Jürgen Lindner,Jürgen Faßbender,Olav Hellwig,Alina M. Deac###
(1655042, 1655042)
 Interfaces separating ferromagnetic (FM) layers from non-ferromagnetic layersoffer unique properties due to spin-orbit coupling and symmetry breaking,yielding effects such as exchange bias, perpendicular magnetic anisotropy,spin-pumping, spin-transfer torques, conversion between charge and spincurrents and vice-versa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 3, 'D', 1]

F
###Ion-Irradiation-Induced Cobalt/Cobalt Oxide Heterostructures: Printing 3D Interfaces|Oğuz Yıldırım,Donovan Hilliard,Sri Sai Phani Kanth Arekapudi,Ciarán Fowley,Hamza Cansever,Leopold Koch,Lakshmi Ramasubramanian,Shengqiang Zhou,Roman Böttger,Jürgen Lindner,Jürgen Faßbender,Olav Hellwig,Alina M. Deac###
(1655168, 1655168)
 These interfacial phenomena play crucial roles formagnetic data storage and transfer applications, which require forming FM<missing VAR>nano-structures embedded in non-ferromagnetic matrices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 3, 'D', 2]

Co
###Ion-Irradiation-Induced Cobalt/Cobalt Oxide Heterostructures: Printing 3D Interfaces|Oğuz Yıldırım,Donovan Hilliard,Sri Sai Phani Kanth Arekapudi,Ciarán Fowley,Hamza Cansever,Leopold Koch,Lakshmi Ramasubramanian,Shengqiang Zhou,Roman Böttger,Jürgen Lindner,Jürgen Faßbender,Olav Hellwig,Alina M. Deac###
(1655304, 1655304)
 Our findings are later exploited to form 3-dimensionalmagnetic interfaces between Co, CoO and Pt by spatially-selective irradiationof CoO/Pt multilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[274.0, 3, 'D', 6]

CoO
###Ion-Irradiation-Induced Cobalt/Cobalt Oxide Heterostructures: Printing 3D Interfaces|Oğuz Yıldırım,Donovan Hilliard,Sri Sai Phani Kanth Arekapudi,Ciarán Fowley,Hamza Cansever,Leopold Koch,Lakshmi Ramasubramanian,Shengqiang Zhou,Roman Böttger,Jürgen Lindner,Jürgen Faßbender,Olav Hellwig,Alina M. Deac###
(1655307, 1655308)
 Our findings are later exploited to form 3-dimensionalmagnetic interfaces between Co, CoO and Pt by spatially-selective irradiationof CoO/Pt multilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[277.0, 3, 'D', 6]

Pt
###Ion-Irradiation-Induced Cobalt/Cobalt Oxide Heterostructures: Printing 3D Interfaces|Oğuz Yıldırım,Donovan Hilliard,Sri Sai Phani Kanth Arekapudi,Ciarán Fowley,Hamza Cansever,Leopold Koch,Lakshmi Ramasubramanian,Shengqiang Zhou,Roman Böttger,Jürgen Lindner,Jürgen Faßbender,Olav Hellwig,Alina M. Deac###
(1655312, 1655312)
 Our findings are later exploited to form 3-dimensionalmagnetic interfaces between Co, CoO and Pt by spatially-selective irradiationof CoO/Pt multilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[282.0, 3, 'D', 6]

CoO/Pt
###Ion-Irradiation-Induced Cobalt/Cobalt Oxide Heterostructures: Printing 3D Interfaces|Oğuz Yıldırım,Donovan Hilliard,Sri Sai Phani Kanth Arekapudi,Ciarán Fowley,Hamza Cansever,Leopold Koch,Lakshmi Ramasubramanian,Shengqiang Zhou,Roman Böttger,Jürgen Lindner,Jürgen Faßbender,Olav Hellwig,Alina M. Deac###
(1655325, 1655328)
 Our findings are later exploited to form 3-dimensionalmagnetic interfaces between Co, CoO and Pt by spatially-selective irradiationof CoO/Pt multilayers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[295.0, 3, 'D', 6]

O
###Ion-Irradiation-Induced Cobalt/Cobalt Oxide Heterostructures: Printing 3D Interfaces|Oğuz Yıldırım,Donovan Hilliard,Sri Sai Phani Kanth Arekapudi,Ciarán Fowley,Hamza Cansever,Leopold Koch,Lakshmi Ramasubramanian,Shengqiang Zhou,Roman Böttger,Jürgen Lindner,Jürgen Faßbender,Olav Hellwig,Alina M. Deac###
(1655349, 1655349)
 We demonstrate that the mechanical displacement of the Oatoms plays a crucial role during the reduction from insulating,non-ferromagnetic cobalt oxides to metallic cobalt.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[319.0, 3, 'D', 7]

Co/Pt
###Ion-Irradiation-Induced Cobalt/Cobalt Oxide Heterostructures: Printing 3D Interfaces|Oğuz Yıldırım,Donovan Hilliard,Sri Sai Phani Kanth Arekapudi,Ciarán Fowley,Hamza Cansever,Leopold Koch,Lakshmi Ramasubramanian,Shengqiang Zhou,Roman Böttger,Jürgen Lindner,Jürgen Faßbender,Olav Hellwig,Alina M. Deac###
(1655410, 1655412)
 Metallic cobalt yields bothperpendicular magnetic anisotropy in the generated Co/Pt nano-structures, and,at low temperatures, exchange bias at vertical interfaces between Co and CoO.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[380.0, 3, 'D', 8]

Co
###Ion-Irradiation-Induced Cobalt/Cobalt Oxide Heterostructures: Printing 3D Interfaces|Oğuz Yıldırım,Donovan Hilliard,Sri Sai Phani Kanth Arekapudi,Ciarán Fowley,Hamza Cansever,Leopold Koch,Lakshmi Ramasubramanian,Shengqiang Zhou,Roman Böttger,Jürgen Lindner,Jürgen Faßbender,Olav Hellwig,Alina M. Deac###
(1655442, 1655442)
 Metallic cobalt yields bothperpendicular magnetic anisotropy in the generated Co/Pt nano-structures, and,at low temperatures, exchange bias at vertical interfaces between Co and CoO.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[412.0, 3, 'D', 8]

CoO
###Ion-Irradiation-Induced Cobalt/Cobalt Oxide Heterostructures: Printing 3D Interfaces|Oğuz Yıldırım,Donovan Hilliard,Sri Sai Phani Kanth Arekapudi,Ciarán Fowley,Hamza Cansever,Leopold Koch,Lakshmi Ramasubramanian,Shengqiang Zhou,Roman Böttger,Jürgen Lindner,Jürgen Faßbender,Olav Hellwig,Alina M. Deac###
(1655446, 1655447)
 Metallic cobalt yields bothperpendicular magnetic anisotropy in the generated Co/Pt nano-structures, and,at low temperatures, exchange bias at vertical interfaces between Co and CoO.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[416.0, 3, 'D', 8]

S
###Ion-Irradiation-Induced Cobalt/Cobalt Oxide Heterostructures: Printing 3D Interfaces|Oğuz Yıldırım,Donovan Hilliard,Sri Sai Phani Kanth Arekapudi,Ciarán Fowley,Hamza Cansever,Leopold Koch,Lakshmi Ramasubramanian,Shengqiang Zhou,Roman Böttger,Jürgen Lindner,Jürgen Faßbender,Olav Hellwig,Alina M. Deac###
(1655514, 1655514)
If pushed to the limit of ion-irradiation technology, this approach could, inprinciple, enable the creation of densely-packed, atomic scale ferromagneticpoint-contact spin-torque oscillator (ST<missing VAR>O) networks, or conductive channels forcurrent-confined-path based current perpendicular-to-plane giantmagnetoresistance read-heads.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[484.0, 3, 'D', 9]

O
###Ion-Irradiation-Induced Cobalt/Cobalt Oxide Heterostructures: Printing 3D Interfaces|Oğuz Yıldırım,Donovan Hilliard,Sri Sai Phani Kanth Arekapudi,Ciarán Fowley,Hamza Cansever,Leopold Koch,Lakshmi Ramasubramanian,Shengqiang Zhou,Roman Böttger,Jürgen Lindner,Jürgen Faßbender,Olav Hellwig,Alina M. Deac###
(1655516, 1655516)
If pushed to the limit of ion-irradiation technology, this approach could, inprinciple, enable the creation of densely-packed, atomic scale ferromagneticpoint-contact spin-torque oscillator (ST<missing VAR>O) networks, or conductive channels forcurrent-confined-path based current perpendicular-to-plane giantmagnetoresistance read-heads.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[486.0, 3, 'D', 9]

(SOC)
###Giant anisotropic magnetoresistance through a tilted molecular $π$-orbital|Dongzhe Li,Fabian Pauly,Alexander Smogunov###
(1655605, 1655609)
 Anisotropic magnetoresistance (AMR), originating from spin-orbit coupling(SOC), is the sensitivity of the electrical resistance in magnetic systems tothe direction of spin magnetization.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 95, '%', 2]

SOC
###Giant anisotropic magnetoresistance through a tilted molecular $π$-orbital|Dongzhe Li,Fabian Pauly,Alexander Smogunov###
(1655799, 1655801)
 We find that SOC opens, via spin-flip events at theferromagnet-molecule interface, a new conduction channel, which is fullyblocked by symmetry without SOC.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 95, '%', 2]

SOC
###Giant anisotropic magnetoresistance through a tilted molecular $π$-orbital|Dongzhe Li,Fabian Pauly,Alexander Smogunov###
(1655850, 1655852)
 We find that SOC opens, via spin-flip events at theferromagnet-molecule interface, a new conduction channel, which is fullyblocked by symmetry without SOC.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 95, '%', 2]

CoFe/Pt
###Spin-orbit magnetic state readout in scaled ferromagnetic/heavy metal nanostructures|Van Tuong Pham,Inge Groen,Sasikanth Manipatruni,Won Young Choi,Dmitri E. Nikonov,Edurne Sagasta,Chia-Ching Lin,Tanay Gosavi,Alain Marty,Luis E. Hueso,Ian Young,Fèlix Casanova###
(1656323, 1656326)
 This scaling law allows us to obtain a giant signal by spin Halleffect in CoFe/Pt nanostructures and quantify an effective spin-to-chargeconversion rate for the CoFe/Pt system.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

CoFe/Pt
###Spin-orbit magnetic state readout in scaled ferromagnetic/heavy metal nanostructures|Van Tuong Pham,Inge Groen,Sasikanth Manipatruni,Won Young Choi,Dmitri E. Nikonov,Edurne Sagasta,Chia-Ching Lin,Tanay Gosavi,Alain Marty,Luis E. Hueso,Ian Young,Fèlix Casanova###
(1656353, 1656356)
 This scaling law allows us to obtain a giant signal by spin Halleffect in CoFe/Pt nanostructures and quantify an effective spin-to-chargeconversion rate for the CoFe/Pt system.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

W2As3
###Angle-dependent magnetoresistance and its implications for Lifshitz transition in W2As3|Jialu Wang,Haiyang Yang,Linchao Ding,Wei You,Chuanying Xi,Jie Cheng,Zhixiang Shi,Chao Cao,Yongkang Luo,Zengwei Zhu,Jianhui Dai,Mingliang Tian,Yuke Li###
(1656518, 1656521)
Angle-dependent magnetoresistance and its implications for Lifshitz transition in W2As3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, 70000, '%', 5],[209.0, 4.2, 'K', 5],[213.0, 53, 'T', 5],[254.0, 40, 'K', 6],[270.0, 30, 'K', 6]

W2As3
###Angle-dependent magnetoresistance and its implications for Lifshitz transition in W2As3|Jialu Wang,Haiyang Yang,Linchao Ding,Wei You,Chuanying Xi,Jie Cheng,Zhixiang Shi,Chao Cao,Yongkang Luo,Zengwei Zhu,Jianhui Dai,Mingliang Tian,Yuke Li###
(1656695, 1656698)
 Here, we report studies of theangle-dependent MR (ADMR) and the thermoelectric effect in W2As3 singlecrystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 70000, '%', 1],[32.0, 4.2, 'K', 1],[36.0, 53, 'T', 1],[77.0, 40, 'K', 2],[93.0, 30, 'K', 2]

K
###Angle-dependent magnetoresistance and its implications for Lifshitz transition in W2As3|Jialu Wang,Haiyang Yang,Linchao Ding,Wei You,Chuanying Xi,Jie Cheng,Zhixiang Shi,Chao Cao,Yongkang Luo,Zengwei Zhu,Jianhui Dai,Mingliang Tian,Yuke Li###
(1656804, 1656804)
 The window of 30-40 K also corresponds substantial changesin Hall effect, thermopower and Nernst coefficient, implying an abrupt changeof Fermi surface topology.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 70000, '%', 2],[74.0, 4.2, 'K', 2],[70.0, 53, 'T', 2],[29.0, 40, 'K', 1],[13.0, 30, 'K', 1]

Fe5GeTe2
###Physical properties and thermal stability of Fe5GeTe2 single crystals|Andrew F. May,Craig A. Bridges,Michael A. McGuire###
(1656978, 1656982)
Physical properties and thermal stability of Fe5GeTe2 single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.625,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 270, 'to', 3],[167.0, 310, 'K', 3],[374.0, 120, 'K', 8],[437.0, 120, 'K', 10]

Fe
###Physical properties and thermal stability of Fe5GeTe2 single crystals|Andrew F. May,Craig A. Bridges,Michael A. McGuire###
(1657001, 1657001)
 The magnetic and transport properties of Fe-deficient Fe5GeTe2 singlecrystals (Fe5-xGeTe2 with x<missing VAR>0.3) were studied and the impact of thermalprocessing was explored.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 270, 'to', 2],[148.0, 310, 'K', 2],[355.0, 120, 'K', 7],[418.0, 120, 'K', 9]

Fe5GeTe2
###Physical properties and thermal stability of Fe5GeTe2 single crystals|Andrew F. May,Craig A. Bridges,Michael A. McGuire###
(1657005, 1657009)
 The magnetic and transport properties of Fe-deficient Fe5GeTe2 singlecrystals (Fe5-xGeTe2 with x<missing VAR>0.3) were studied and the impact of thermalprocessing was explored.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.625,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 270, 'to', 2],[140.0, 310, 'K', 2],[347.0, 120, 'K', 7],[410.0, 120, 'K', 9]

Fe5-xGeTe2
###Physical properties and thermal stability of Fe5GeTe2 single crystals|Andrew F. May,Craig A. Bridges,Michael A. McGuire###
(1657017, 1657023)
 The magnetic and transport properties of Fe-deficient Fe5GeTe2 singlecrystals (Fe5-xGeTe2 with x<missing VAR>0.3) were studied and the impact of thermalprocessing was explored.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[125.0, 270, 'to', 2],[126.0, 310, 'K', 2],[333.0, 120, 'K', 7],[396.0, 120, 'K', 9]

K
###Physical properties and thermal stability of Fe5GeTe2 single crystals|Andrew F. May,Craig A. Bridges,Michael A. McGuire###
(1657108, 1657108)
 Quenching crystals from the growth temperature hasbeen previously shown to produce a metastable state that undergoes a stronglyhysteretic first-order transition upon cooling below 100K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 270, 'to', 1],[41.0, 310, 'K', 1],[248.0, 120, 'K', 6],[311.0, 120, 'K', 8]

C
###Physical properties and thermal stability of Fe5GeTe2 single crystals|Andrew F. May,Craig A. Bridges,Michael A. McGuire###
(1657145, 1657145)
 The first-ordertransition impacts the magnetic properties, yielding an enhancement in theCurie temperature T<missing VAR>C from 270 to 310K.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 270, 'to', 0],[4.0, 310, 'K', 0],[211.0, 120, 'K', 5],[274.0, 120, 'K', 7]

In
###Physical properties and thermal stability of Fe5GeTe2 single crystals|Andrew F. May,Craig A. Bridges,Michael A. McGuire###
(1657152, 1657152)
 In the present work, THT 550K hasbeen identified as the temperature above which metastable crystals are obtainedvia quenching.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 270, 'to', 1],[3.0, 310, 'K', 1],[204.0, 120, 'K', 4],[267.0, 120, 'K', 6]

K
###Physical properties and thermal stability of Fe5GeTe2 single crystals|Andrew F. May,Craig A. Bridges,Michael A. McGuire###
(1657166, 1657166)
 In the present work, THT 550K hasbeen identified as the temperature above which metastable crystals are obtainedvia quenching.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 270, 'to', 1],[17.0, 310, 'K', 1],[190.0, 120, 'K', 4],[253.0, 120, 'K', 6]

K
###Physical properties and thermal stability of Fe5GeTe2 single crystals|Andrew F. May,Craig A. Bridges,Michael A. McGuire###
(1657331, 1657331)
 Thescattering of charge carriers appears to be dominated by moments fluctuating onthe Fe(1) sublattice, which remain dynamic down to 100-120K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[183.0, 270, 'to', 4],[182.0, 310, 'K', 4],[25.0, 120, 'K', 1],[88.0, 120, 'K', 3]

Fe
###Physical properties and thermal stability of Fe5GeTe2 single crystals|Andrew F. May,Craig A. Bridges,Michael A. McGuire###
(1657445, 1657445)
 The data suggest that both electrons and holes contribute toconduction above 120K, but that electrons dominate at lower temperature whenall of the Fe sublattices are magnetically ordered.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[297.0, 270, 'to', 7],[296.0, 310, 'K', 7],[89.0, 120, 'K', 2],[26.0, 120, 'K', 0]

Fe5-xGeTe2
###Physical properties and thermal stability of Fe5GeTe2 single crystals|Andrew F. May,Craig A. Bridges,Michael A. McGuire###
(1657483, 1657489)
 This study demonstrates astrong coupling of the magnetism and transport properties in Fe5-xGeTe2 andcomplements the previous results that demonstrated strong magnetoelasticcoupling as the Fe(1) moments order.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[335.0, 270, 'to', 8],[334.0, 310, 'K', 8],[127.0, 120, 'K', 3],[64.0, 120, 'K', 1]

OI10.1103
###Physical properties and thermal stability of Fe5GeTe2 single crystals|Andrew F. May,Craig A. Bridges,Michael A. McGuire###
(1657543, 1657545)
 The published version of this manuscriptis D<missing VAR>OI10.1103/PhysRevMaterials.
Featurization terminated normally.
0,0,0,0,0,0,0,0.09000657047964501,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.909993429520355,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[395.0, 270, 'to', 9],[394.0, 310, 'K', 9],[187.0, 120, 'K', 4],[124.0, 120, 'K', 2]

Ir
###Interlayer exchange coupling through Ir-doped Cu spin Hall material|Hiroto Masuda,Takeshi Seki,Yong-Chang Lau,Takahide Kubota,Koki Takanashi###
(1657573, 1657573)
Interlayer exchange coupling through Ir-doped Cu spin Hall material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[270.0, 0.75, 'nm', 4]

Cu
###Interlayer exchange coupling through Ir-doped Cu spin Hall material|Hiroto Masuda,Takeshi Seki,Yong-Chang Lau,Takahide Kubota,Koki Takanashi###
(1657577, 1657577)
Interlayer exchange coupling through Ir-doped Cu spin Hall material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[266.0, 0.75, 'nm', 4]

F
###Interlayer exchange coupling through Ir-doped Cu spin Hall material|Hiroto Masuda,Takeshi Seki,Yong-Chang Lau,Takahide Kubota,Koki Takanashi###
(1657655, 1657655)
 Metallic superlattices where the magnetization vectors in the adjacentferromagnetic layers are antiferromagnetically coupled by the interlayerexchange coupling through nonmagnetic spacer layers are systems available forthe systematic study on antiferromagnetic (AF) spintronics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 0.75, 'nm', 3]

As
###Interlayer exchange coupling through Ir-doped Cu spin Hall material|Hiroto Masuda,Takeshi Seki,Yong-Chang Lau,Takahide Kubota,Koki Takanashi###
(1657661, 1657661)
 As a candidate ofnonmagnetic spacer layer material exhibiting remarkable spin Hall effect, whichis essential to achieve spin-orbit torque switching, we selected the Ir-dopedCu in this study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[182.0, 0.75, 'nm', 2]

Ir
###Interlayer exchange coupling through Ir-doped Cu spin Hall material|Hiroto Masuda,Takeshi Seki,Yong-Chang Lau,Takahide Kubota,Koki Takanashi###
(1657715, 1657715)
 As a candidate ofnonmagnetic spacer layer material exhibiting remarkable spin Hall effect, whichis essential to achieve spin-orbit torque switching, we selected the Ir-dopedCu in this study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 0.75, 'nm', 2]

Cu
###Interlayer exchange coupling through Ir-doped Cu spin Hall material|Hiroto Masuda,Takeshi Seki,Yong-Chang Lau,Takahide Kubota,Koki Takanashi###
(1657720, 1657720)
 As a candidate ofnonmagnetic spacer layer material exhibiting remarkable spin Hall effect, whichis essential to achieve spin-orbit torque switching, we selected the Ir-dopedCu in this study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 0.75, 'nm', 2]

F
###Interlayer exchange coupling through Ir-doped Cu spin Hall material|Hiroto Masuda,Takeshi Seki,Yong-Chang Lau,Takahide Kubota,Koki Takanashi###
(1657732, 1657732)
 The AF-coupling for the Co / Cu95Ir5 / Co wasinvestigated, and was compared with those for the Co / Cu / Co and Co / Ir /Co.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 0.75, 'nm', 1]

Co
###Interlayer exchange coupling through Ir-doped Cu spin Hall material|Hiroto Masuda,Takeshi Seki,Yong-Chang Lau,Takahide Kubota,Koki Takanashi###
(1657740, 1657740)
 The AF-coupling for the Co / Cu95Ir5 / Co wasinvestigated, and was compared with those for the Co / Cu / Co and Co / Ir /Co.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 0.75, 'nm', 1]

Cu95Ir5
###Interlayer exchange coupling through Ir-doped Cu spin Hall material|Hiroto Masuda,Takeshi Seki,Yong-Chang Lau,Takahide Kubota,Koki Takanashi###
(1657744, 1657747)
 The AF-coupling for the Co / Cu95Ir5 / Co wasinvestigated, and was compared with those for the Co / Cu / Co and Co / Ir /Co.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.95,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.05,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 0.75, 'nm', 1]

Co
###Interlayer exchange coupling through Ir-doped Cu spin Hall material|Hiroto Masuda,Takeshi Seki,Yong-Chang Lau,Takahide Kubota,Koki Takanashi###
(1657751, 1657751)
 The AF-coupling for the Co / Cu95Ir5 / Co wasinvestigated, and was compared with those for the Co / Cu / Co and Co / Ir /Co.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 0.75, 'nm', 1]

Co
###Interlayer exchange coupling through Ir-doped Cu spin Hall material|Hiroto Masuda,Takeshi Seki,Yong-Chang Lau,Takahide Kubota,Koki Takanashi###
(1657773, 1657773)
 The AF-coupling for the Co / Cu95Ir5 / Co wasinvestigated, and was compared with those for the Co / Cu / Co and Co / Ir /Co.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 0.75, 'nm', 1]

Cu
###Interlayer exchange coupling through Ir-doped Cu spin Hall material|Hiroto Masuda,Takeshi Seki,Yong-Chang Lau,Takahide Kubota,Koki Takanashi###
(1657777, 1657777)
 The AF-coupling for the Co / Cu95Ir5 / Co wasinvestigated, and was compared with those for the Co / Cu / Co and Co / Ir /Co.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 0.75, 'nm', 1]

Co
###Interlayer exchange coupling through Ir-doped Cu spin Hall material|Hiroto Masuda,Takeshi Seki,Yong-Chang Lau,Takahide Kubota,Koki Takanashi###
(1657781, 1657781)
 The AF-coupling for the Co / Cu95Ir5 / Co wasinvestigated, and was compared with those for the Co / Cu / Co and Co / Ir /Co.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 0.75, 'nm', 1]

Co
###Interlayer exchange coupling through Ir-doped Cu spin Hall material|Hiroto Masuda,Takeshi Seki,Yong-Chang Lau,Takahide Kubota,Koki Takanashi###
(1657785, 1657785)
 The AF-coupling for the Co / Cu95Ir5 / Co wasinvestigated, and was compared with those for the Co / Cu / Co and Co / Ir /Co.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 0.75, 'nm', 1]

Ir
###Interlayer exchange coupling through Ir-doped Cu spin Hall material|Hiroto Masuda,Takeshi Seki,Yong-Chang Lau,Takahide Kubota,Koki Takanashi###
(1657789, 1657789)
 The AF-coupling for the Co / Cu95Ir5 / Co wasinvestigated, and was compared with those for the Co / Cu / Co and Co / Ir /Co.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 0.75, 'nm', 1]

Co
###Interlayer exchange coupling through Ir-doped Cu spin Hall material|Hiroto Masuda,Takeshi Seki,Yong-Chang Lau,Takahide Kubota,Koki Takanashi###
(1657794, 1657794)
 The AF-coupling for the Co / Cu95Ir5 / Co wasinvestigated, and was compared with those for the Co / Cu / Co and Co / Ir /Co.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 0.75, 'nm', 1]

F
###Interlayer exchange coupling through Ir-doped Cu spin Hall material|Hiroto Masuda,Takeshi Seki,Yong-Chang Lau,Takahide Kubota,Koki Takanashi###
(1657806, 1657806)
 The maximum magnitude of AF-coupling strength was obtained to be 0.39mJ/m<missing VAR>2 at the Cu95Ir5 thickness of about 0.75 nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 0.75, 'nm', 0]

Cu95Ir5
###Interlayer exchange coupling through Ir-doped Cu spin Hall material|Hiroto Masuda,Takeshi Seki,Yong-Chang Lau,Takahide Kubota,Koki Takanashi###
(1657833, 1657836)
 The maximum magnitude of AF-coupling strength was obtained to be 0.39mJ/m<missing VAR>2 at the Cu95Ir5 thickness of about 0.75 nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.95,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.05,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 0.75, 'nm', 0]

Cu95Ir5
###Interlayer exchange coupling through Ir-doped Cu spin Hall material|Hiroto Masuda,Takeshi Seki,Yong-Chang Lau,Takahide Kubota,Koki Takanashi###
(1657866, 1657869)
 Furthermore, wefound a large spin Hall angle of Cu95Ir5 in Co / Cu95Ir5bilayers by carrying out spin Hall magnetoresistance and harmonic Hall voltagemeasurements, which are estimated to be 3  4 %.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.95,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.05,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 0.75, 'nm', 1]

Co
###Interlayer exchange coupling through Ir-doped Cu spin Hall material|Hiroto Masuda,Takeshi Seki,Yong-Chang Lau,Takahide Kubota,Koki Takanashi###
(1657873, 1657873)
 Furthermore, wefound a large spin Hall angle of Cu95Ir5 in Co / Cu95Ir5bilayers by carrying out spin Hall magnetoresistance and harmonic Hall voltagemeasurements, which are estimated to be 3  4 %.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 0.75, 'nm', 1]

Cu95Ir5
###Interlayer exchange coupling through Ir-doped Cu spin Hall material|Hiroto Masuda,Takeshi Seki,Yong-Chang Lau,Takahide Kubota,Koki Takanashi###
(1657877, 1657880)
 Furthermore, wefound a large spin Hall angle of Cu95Ir5 in Co / Cu95Ir5bilayers by carrying out spin Hall magnetoresistance and harmonic Hall voltagemeasurements, which are estimated to be 3  4 %.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.95,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.05,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 0.75, 'nm', 1]

Cu95Ir5
###Interlayer exchange coupling through Ir-doped Cu spin Hall material|Hiroto Masuda,Takeshi Seki,Yong-Chang Lau,Takahide Kubota,Koki Takanashi###
(1657940, 1657943)
 Our experimental resultsclearly indicate that Cu95Ir5 is a nonmagnetic spacer layer allowingus to achieve moderately strong AF-coupling and to generate appreciablespin-orbit torque via the spin Hall effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.95,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.05,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 0.75, 'nm', 2]

F
###Interlayer exchange coupling through Ir-doped Cu spin Hall material|Hiroto Masuda,Takeshi Seki,Yong-Chang Lau,Takahide Kubota,Koki Takanashi###
(1657969, 1657969)
 Our experimental resultsclearly indicate that Cu95Ir5 is a nonmagnetic spacer layer allowingus to achieve moderately strong AF-coupling and to generate appreciablespin-orbit torque via the spin Hall effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 0.75, 'nm', 2]

LaMnO3/SrIrO3
###Tunable and Enhanced Rashba Spin-Orbit Coupling in Iridate-Manganite Heterostructures|T. S. Suraj,Ganesh Ji Omar,Hariom Jani,Muhammad Mangattuchali Juvaid,Sonu Hooda,Anindita Chaudhuri,Andrivo Rusydi,Kanikrishnan Sethupathi,Thirumalai Venkatesan,Ariando Ariando,Mamidanna Sri Ramachandra Rao###
(1658118, 1658126)
 Our study proposes a novelplatform for engineering the magnetism and spin-orbit coupling at LaMnO3/SrIrO3(3d<missing VAR>-5d<missing VAR> oxide) interfaces by tuning the LaMnO3 growth conditions which controlsthe lattice displacement and spin-correlated interfacial coupling throughcharge transfer.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[317.0, 3, 'd', 5]

LaMnO3
###Tunable and Enhanced Rashba Spin-Orbit Coupling in Iridate-Manganite Heterostructures|T. S. Suraj,Ganesh Ji Omar,Hariom Jani,Muhammad Mangattuchali Juvaid,Sonu Hooda,Anindita Chaudhuri,Andrivo Rusydi,Kanikrishnan Sethupathi,Thirumalai Venkatesan,Ariando Ariando,Mamidanna Sri Ramachandra Rao###
(1658147, 1658150)
 Our study proposes a novelplatform for engineering the magnetism and spin-orbit coupling at LaMnO3/SrIrO3(3d<missing VAR>-5d<missing VAR> oxide) interfaces by tuning the LaMnO3 growth conditions which controlsthe lattice displacement and spin-correlated interfacial coupling throughcharge transfer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[293.0, 3, 'd', 5]

LaMnO3/SrIrO3
###Tunable and Enhanced Rashba Spin-Orbit Coupling in Iridate-Manganite Heterostructures|T. S. Suraj,Ganesh Ji Omar,Hariom Jani,Muhammad Mangattuchali Juvaid,Sonu Hooda,Anindita Chaudhuri,Andrivo Rusydi,Kanikrishnan Sethupathi,Thirumalai Venkatesan,Ariando Ariando,Mamidanna Sri Ramachandra Rao###
(1658226, 1658234)
 We report on a tunable and enhanced interface-induced Rashbaspin-orbit coupling and Elliot-Yafet spin relaxation mechanism in LaMnO3/SrIrO3bilayer with change in the underlying magnetic order of LaMnO3.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[209.0, 3, 'd', 4]

LaMnO3
###Tunable and Enhanced Rashba Spin-Orbit Coupling in Iridate-Manganite Heterostructures|T. S. Suraj,Ganesh Ji Omar,Hariom Jani,Muhammad Mangattuchali Juvaid,Sonu Hooda,Anindita Chaudhuri,Andrivo Rusydi,Kanikrishnan Sethupathi,Thirumalai Venkatesan,Ariando Ariando,Mamidanna Sri Ramachandra Rao###
(1658255, 1658258)
 We report on a tunable and enhanced interface-induced Rashbaspin-orbit coupling and Elliot-Yafet spin relaxation mechanism in LaMnO3/SrIrO3bilayer with change in the underlying magnetic order of LaMnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[185.0, 3, 'd', 4]

LaMnO3/SrIrO3
###Tunable and Enhanced Rashba Spin-Orbit Coupling in Iridate-Manganite Heterostructures|T. S. Suraj,Ganesh Ji Omar,Hariom Jani,Muhammad Mangattuchali Juvaid,Sonu Hooda,Anindita Chaudhuri,Andrivo Rusydi,Kanikrishnan Sethupathi,Thirumalai Venkatesan,Ariando Ariando,Mamidanna Sri Ramachandra Rao###
(1658280, 1658288)
 We alsoobserved enhanced spin-orbit coupling strength in LaMnO3/SrIrO3 compared topreviously reported SrIrO3 layers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[155.0, 3, 'd', 3]

SrIrO3
###Tunable and Enhanced Rashba Spin-Orbit Coupling in Iridate-Manganite Heterostructures|T. S. Suraj,Ganesh Ji Omar,Hariom Jani,Muhammad Mangattuchali Juvaid,Sonu Hooda,Anindita Chaudhuri,Andrivo Rusydi,Kanikrishnan Sethupathi,Thirumalai Venkatesan,Ariando Ariando,Mamidanna Sri Ramachandra Rao###
(1658299, 1658302)
 We alsoobserved enhanced spin-orbit coupling strength in LaMnO3/SrIrO3 compared topreviously reported SrIrO3 layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 3, 'd', 3]

Mn
###Tunable and Enhanced Rashba Spin-Orbit Coupling in Iridate-Manganite Heterostructures|T. S. Suraj,Ganesh Ji Omar,Hariom Jani,Muhammad Mangattuchali Juvaid,Sonu Hooda,Anindita Chaudhuri,Andrivo Rusydi,Kanikrishnan Sethupathi,Thirumalai Venkatesan,Ariando Ariando,Mamidanna Sri Ramachandra Rao###
(1658328, 1658328)
 The X<missing VAR>-Ray spectroscopy measurement revealsthe quantitative valence of Mn and their impact on charge transfer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 3, 'd', 2]

SrIrO3
###Tunable and Enhanced Rashba Spin-Orbit Coupling in Iridate-Manganite Heterostructures|T. S. Suraj,Ganesh Ji Omar,Hariom Jani,Muhammad Mangattuchali Juvaid,Sonu Hooda,Anindita Chaudhuri,Andrivo Rusydi,Kanikrishnan Sethupathi,Thirumalai Venkatesan,Ariando Ariando,Mamidanna Sri Ramachandra Rao###
(1658377, 1658380)
 Further, weperformed angle-dependent magnetoresistance measurements, which show signaturesof magnetic proximity effect in SrIrO3 while reflecting the magnetic order ofLaMnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 3, 'd', 1]

LaMnO3
###Tunable and Enhanced Rashba Spin-Orbit Coupling in Iridate-Manganite Heterostructures|T. S. Suraj,Ganesh Ji Omar,Hariom Jani,Muhammad Mangattuchali Juvaid,Sonu Hooda,Anindita Chaudhuri,Andrivo Rusydi,Kanikrishnan Sethupathi,Thirumalai Venkatesan,Ariando Ariando,Mamidanna Sri Ramachandra Rao###
(1658395, 1658398)
 Further, weperformed angle-dependent magnetoresistance measurements, which show signaturesof magnetic proximity effect in SrIrO3 while reflecting the magnetic order ofLaMnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 3, 'd', 1]

SrIrO3
###Tunable and Enhanced Rashba Spin-Orbit Coupling in Iridate-Manganite Heterostructures|T. S. Suraj,Ganesh Ji Omar,Hariom Jani,Muhammad Mangattuchali Juvaid,Sonu Hooda,Anindita Chaudhuri,Andrivo Rusydi,Kanikrishnan Sethupathi,Thirumalai Venkatesan,Ariando Ariando,Mamidanna Sri Ramachandra Rao###
(1658457, 1658460)
 Our work thus demonstrates a new route to engineer the interfaceinduced Rashba spin-orbit coupling and magnetic proximity effect in 3d-5d<missing VAR> oxideinterfaces which makes SrIrO3 an ideal candidate for spintronics applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 3, 'd', 0]

SrRuO3
###Quantum transport evidence of Weyl fermions in an epitaxial ferromagnetic oxide|Kosuke Takiguchi,Yuki K. Wakabayashi,Hiroshi Irie,Yoshiharu Krockenberger,Takuma Otsuka,Hiroshi Sawada,Sergey A. Nikolaev,Hena Das,Masaaki Tanaka,Yoshitaka Taniyasu,Hideki Yamamoto###
(1658641, 1658644)
 SrRuO3, a 4d ferromagnetic metal often used asan epitaxial conducting layer in oxide heterostructures, provides a promisingopportunity to seek for the existence of magnetic Weyl fermions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 4, 'd', 0],[200.0, 10000, 'cm', 2]

SrRuO3
###Quantum transport evidence of Weyl fermions in an epitaxial ferromagnetic oxide|Kosuke Takiguchi,Yuki K. Wakabayashi,Hiroshi Irie,Yoshiharu Krockenberger,Takuma Otsuka,Hiroshi Sawada,Sergey A. Nikolaev,Hena Das,Masaaki Tanaka,Yoshitaka Taniyasu,Hideki Yamamoto###
(1658778, 1658781)
 Here we show direct quantum transportevidence of magnetic Weyl fermions in an epitaxial ferromagnetic oxide SrRuO3unsaturated linear positive magnetoresistance (MR), chiral-anomaly-inducednegative MR, Pi Berry phase accumulated along cyclotron orbits, light cyclotronmasses and high quantum mobility of about 10000 cm2/Vs.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 4, 'd', 2],[63.0, 10000, 'cm', 0]

SrRuO3
###Quantum transport evidence of Weyl fermions in an epitaxial ferromagnetic oxide|Kosuke Takiguchi,Yuki K. Wakabayashi,Hiroshi Irie,Yoshiharu Krockenberger,Takuma Otsuka,Hiroshi Sawada,Sergey A. Nikolaev,Hena Das,Masaaki Tanaka,Yoshitaka Taniyasu,Hideki Yamamoto###
(1658877, 1658880)
 We employedmachine-learning-assisted molecular beam epitaxy (MBE) to synthesize SrRuO3films whose quality is sufficiently high to probe their intrinsic quantumtransport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[229.0, 4, 'd', 3],[33.0, 10000, 'cm', 1]

SrRuO3
###Quantum transport evidence of Weyl fermions in an epitaxial ferromagnetic oxide|Kosuke Takiguchi,Yuki K. Wakabayashi,Hiroshi Irie,Yoshiharu Krockenberger,Takuma Otsuka,Hiroshi Sawada,Sergey A. Nikolaev,Hena Das,Masaaki Tanaka,Yoshitaka Taniyasu,Hideki Yamamoto###
(1658995, 1658998)
 Our results establish SrRuO3 as amagnetic Weyl semimetal and topological oxide electronics as a new researchfield.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[347.0, 4, 'd', 5],[151.0, 10000, 'cm', 3]

S
###Spin Hall magnetoresistance in antiferromagnetic insulators|Stephan Geprägs,Matthias Opel,Johanna Fischer,Olena Gomonay,Philipp Schwenke,Matthias Althammer,Hans Huebl,Rudolf Gross###
(1659168, 1659168)
 Here, we show that the spin Hallmagnetoresistance (SMR) is a versatile tool to probe the antiferromagnetic spinstructure via simple electrical transport experiments by investigating theeasy-plane antiferromagnetic insulators alpha-Fe2O3 (hematite) and NiO inbilayer heterostructures with a Pt heavy metal top electrode.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[361.0, -3, ',', 5]

Fe2O3
###Spin Hall magnetoresistance in antiferromagnetic insulators|Stephan Geprägs,Matthias Opel,Johanna Fischer,Olena Gomonay,Philipp Schwenke,Matthias Althammer,Hans Huebl,Rudolf Gross###
(1659221, 1659224)
 Here, we show that the spin Hallmagnetoresistance (SMR) is a versatile tool to probe the antiferromagnetic spinstructure via simple electrical transport experiments by investigating theeasy-plane antiferromagnetic insulators alpha-Fe2O3 (hematite) and NiO inbilayer heterostructures with a Pt heavy metal top electrode.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[305.0, -3, ',', 5]

NiO
###Spin Hall magnetoresistance in antiferromagnetic insulators|Stephan Geprägs,Matthias Opel,Johanna Fischer,Olena Gomonay,Philipp Schwenke,Matthias Althammer,Hans Huebl,Rudolf Gross###
(1659232, 1659233)
 Here, we show that the spin Hallmagnetoresistance (SMR) is a versatile tool to probe the antiferromagnetic spinstructure via simple electrical transport experiments by investigating theeasy-plane antiferromagnetic insulators alpha-Fe2O3 (hematite) and NiO inbilayer heterostructures with a Pt heavy metal top electrode.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[296.0, -3, ',', 5]

Pt
###Spin Hall magnetoresistance in antiferromagnetic insulators|Stephan Geprägs,Matthias Opel,Johanna Fischer,Olena Gomonay,Philipp Schwenke,Matthias Althammer,Hans Huebl,Rudolf Gross###
(1659246, 1659246)
 Here, we show that the spin Hallmagnetoresistance (SMR) is a versatile tool to probe the antiferromagnetic spinstructure via simple electrical transport experiments by investigating theeasy-plane antiferromagnetic insulators alpha-Fe2O3 (hematite) and NiO inbilayer heterostructures with a Pt heavy metal top electrode.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[283.0, -3, ',', 5]

Pt
###Spin Hall magnetoresistance in antiferromagnetic insulators|Stephan Geprägs,Matthias Opel,Johanna Fischer,Olena Gomonay,Philipp Schwenke,Matthias Althammer,Hans Huebl,Rudolf Gross###
(1659298, 1659298)
 While rotating anexternal magnetic field in three orthogonal planes, we record the longitudinaland the transverse resistivities of Pt and observe characteristic resistivitymodulations consistent with the SMR effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[231.0, -3, ',', 4]

S
###Spin Hall magnetoresistance in antiferromagnetic insulators|Stephan Geprägs,Matthias Opel,Johanna Fischer,Olena Gomonay,Philipp Schwenke,Matthias Althammer,Hans Huebl,Rudolf Gross###
(1659317, 1659317)
 While rotating anexternal magnetic field in three orthogonal planes, we record the longitudinaland the transverse resistivities of Pt and observe characteristic resistivitymodulations consistent with the SMR effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[212.0, -3, ',', 4]

Y3Fe5O12/Pt
###Spin Hall magnetoresistance in antiferromagnetic insulators|Stephan Geprägs,Matthias Opel,Johanna Fischer,Olena Gomonay,Philipp Schwenke,Matthias Althammer,Hans Huebl,Rudolf Gross###
(1659364, 1659371)
 We analyze both their amplitude andphase and compare the data to the results from a prototypical collinearferrimagnetic Y3Fe5O12/Pt bilayer.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[158.0, -3, ',', 3]

S
###Spin Hall magnetoresistance in antiferromagnetic insulators|Stephan Geprägs,Matthias Opel,Johanna Fischer,Olena Gomonay,Philipp Schwenke,Matthias Althammer,Hans Huebl,Rudolf Gross###
(1659447, 1659447)
 Our results show that the SMR allows us to understand the spinconfiguration and to investigate magnetoelastic effects in antiferromagneticmulti-domain materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, -3, ',', 1]

Fe2O3/Pt
###Spin Hall magnetoresistance in antiferromagnetic insulators|Stephan Geprägs,Matthias Opel,Johanna Fischer,Olena Gomonay,Philipp Schwenke,Matthias Althammer,Hans Huebl,Rudolf Gross###
(1659495, 1659500)
 Furthermore, in alpha-Fe2O3/Pt bilayers, we find anunexpectedly large SMR amplitude of 2.5 times 10-3, twice as high as forprototype Y3Fe5O12/Pt bilayers, making the system particularly interesting forroom-temperature antiferromagnetic spintronic applications.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[29.0, -3, ',', 0]

S
###Spin Hall magnetoresistance in antiferromagnetic insulators|Stephan Geprägs,Matthias Opel,Johanna Fischer,Olena Gomonay,Philipp Schwenke,Matthias Althammer,Hans Huebl,Rudolf Gross###
(1659516, 1659516)
 Furthermore, in alpha-Fe2O3/Pt bilayers, we find anunexpectedly large SMR amplitude of 2.5 times 10-3, twice as high as forprototype Y3Fe5O12/Pt bilayers, making the system particularly interesting forroom-temperature antiferromagnetic spintronic applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, -3, ',', 0]

Y3Fe5O12/Pt
###Spin Hall magnetoresistance in antiferromagnetic insulators|Stephan Geprägs,Matthias Opel,Johanna Fischer,Olena Gomonay,Philipp Schwenke,Matthias Althammer,Hans Huebl,Rudolf Gross###
(1659546, 1659553)
 Furthermore, in alpha-Fe2O3/Pt bilayers, we find anunexpectedly large SMR amplitude of 2.5 times 10-3, twice as high as forprototype Y3Fe5O12/Pt bilayers, making the system particularly interesting forroom-temperature antiferromagnetic spintronic applications.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[17.0, -3, ',', 0]

RhSi3
###Magnetic and transport anomalies in R2RhSi3 (R= Gd, Tb, and Dy), resembling those of an exotic magnetic skyrmion Gd2PdSi3|Ram Kumar,Kartik K Iyer,P. L. Paulose,E. V. Sampathkumaran###
(1659602, 1659604)
Magnetic and transport anomalies in R<missing VAR>2RhSi3 (R<missing VAR> Gd, Tb, and Dy), resembling those of an exotic magnetic skyrmion Gd2PdSi3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[230.0, 12, 'K', 3],[236.0, 13.5, 'and', 3],[237.0, 6.5, 'K', 3],[243.0, 6.5, 'and', 3],[244.0, 2.5, 'for', 3]

Gd
###Magnetic and transport anomalies in R2RhSi3 (R= Gd, Tb, and Dy), resembling those of an exotic magnetic skyrmion Gd2PdSi3|Ram Kumar,Kartik K Iyer,P. L. Paulose,E. V. Sampathkumaran###
(1659609, 1659609)
Magnetic and transport anomalies in R<missing VAR>2RhSi3 (R<missing VAR> Gd, Tb, and Dy), resembling those of an exotic magnetic skyrmion Gd2PdSi3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[225.0, 12, 'K', 3],[231.0, 13.5, 'and', 3],[232.0, 6.5, 'K', 3],[238.0, 6.5, 'and', 3],[239.0, 2.5, 'for', 3]

Tb
###Magnetic and transport anomalies in R2RhSi3 (R= Gd, Tb, and Dy), resembling those of an exotic magnetic skyrmion Gd2PdSi3|Ram Kumar,Kartik K Iyer,P. L. Paulose,E. V. Sampathkumaran###
(1659612, 1659612)
Magnetic and transport anomalies in R<missing VAR>2RhSi3 (R<missing VAR> Gd, Tb, and Dy), resembling those of an exotic magnetic skyrmion Gd2PdSi3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[222.0, 12, 'K', 3],[228.0, 13.5, 'and', 3],[229.0, 6.5, 'K', 3],[235.0, 6.5, 'and', 3],[236.0, 2.5, 'for', 3]

Dy
###Magnetic and transport anomalies in R2RhSi3 (R= Gd, Tb, and Dy), resembling those of an exotic magnetic skyrmion Gd2PdSi3|Ram Kumar,Kartik K Iyer,P. L. Paulose,E. V. Sampathkumaran###
(1659617, 1659617)
Magnetic and transport anomalies in R<missing VAR>2RhSi3 (R<missing VAR> Gd, Tb, and Dy), resembling those of an exotic magnetic skyrmion Gd2PdSi3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[217.0, 12, 'K', 3],[223.0, 13.5, 'and', 3],[224.0, 6.5, 'K', 3],[230.0, 6.5, 'and', 3],[231.0, 2.5, 'for', 3]

Gd2PdSi3
###Magnetic and transport anomalies in R2RhSi3 (R= Gd, Tb, and Dy), resembling those of an exotic magnetic skyrmion Gd2PdSi3|Ram Kumar,Kartik K Iyer,P. L. Paulose,E. V. Sampathkumaran###
(1659635, 1659639)
Magnetic and transport anomalies in R<missing VAR>2RhSi3 (R<missing VAR> Gd, Tb, and Dy), resembling those of an exotic magnetic skyrmion Gd2PdSi3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[195.0, 12, 'K', 3],[201.0, 13.5, 'and', 3],[202.0, 6.5, 'K', 3],[208.0, 6.5, 'and', 3],[209.0, 2.5, 'for', 3]

K
###Magnetic and transport anomalies in R2RhSi3 (R= Gd, Tb, and Dy), resembling those of an exotic magnetic skyrmion Gd2PdSi3|Ram Kumar,Kartik K Iyer,P. L. Paulose,E. V. Sampathkumaran###
(1659672, 1659672)
 We have carried out magnetization, heat capacity, electrical andmagnetoresistance measurements (2-300 K) for the polycrystalline form ofintermetallic compounds, R<missing VAR>2RhSi3 (R<missing VAR> Gd, Tb, and Dy), forming in a AlB2 derivedhexagonal structure with a triangular R<missing VAR> network.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 12, 'K', 2],[168.0, 13.5, 'and', 2],[169.0, 6.5, 'K', 2],[175.0, 6.5, 'and', 2],[176.0, 2.5, 'for', 2]

RhSi3
###Magnetic and transport anomalies in R2RhSi3 (R= Gd, Tb, and Dy), resembling those of an exotic magnetic skyrmion Gd2PdSi3|Ram Kumar,Kartik K Iyer,P. L. Paulose,E. V. Sampathkumaran###
(1659693, 1659695)
 We have carried out magnetization, heat capacity, electrical andmagnetoresistance measurements (2-300 K) for the polycrystalline form ofintermetallic compounds, R<missing VAR>2RhSi3 (R<missing VAR> Gd, Tb, and Dy), forming in a AlB2 derivedhexagonal structure with a triangular R<missing VAR> network.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 12, 'K', 2],[145.0, 13.5, 'and', 2],[146.0, 6.5, 'K', 2],[152.0, 6.5, 'and', 2],[153.0, 2.5, 'for', 2]

Gd
###Magnetic and transport anomalies in R2RhSi3 (R= Gd, Tb, and Dy), resembling those of an exotic magnetic skyrmion Gd2PdSi3|Ram Kumar,Kartik K Iyer,P. L. Paulose,E. V. Sampathkumaran###
(1659700, 1659700)
 We have carried out magnetization, heat capacity, electrical andmagnetoresistance measurements (2-300 K) for the polycrystalline form ofintermetallic compounds, R<missing VAR>2RhSi3 (R<missing VAR> Gd, Tb, and Dy), forming in a AlB2 derivedhexagonal structure with a triangular R<missing VAR> network.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 12, 'K', 2],[140.0, 13.5, 'and', 2],[141.0, 6.5, 'K', 2],[147.0, 6.5, 'and', 2],[148.0, 2.5, 'for', 2]

Tb
###Magnetic and transport anomalies in R2RhSi3 (R= Gd, Tb, and Dy), resembling those of an exotic magnetic skyrmion Gd2PdSi3|Ram Kumar,Kartik K Iyer,P. L. Paulose,E. V. Sampathkumaran###
(1659703, 1659703)
 We have carried out magnetization, heat capacity, electrical andmagnetoresistance measurements (2-300 K) for the polycrystalline form ofintermetallic compounds, R<missing VAR>2RhSi3 (R<missing VAR> Gd, Tb, and Dy), forming in a AlB2 derivedhexagonal structure with a triangular R<missing VAR> network.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 12, 'K', 2],[137.0, 13.5, 'and', 2],[138.0, 6.5, 'K', 2],[144.0, 6.5, 'and', 2],[145.0, 2.5, 'for', 2]

Dy
###Magnetic and transport anomalies in R2RhSi3 (R= Gd, Tb, and Dy), resembling those of an exotic magnetic skyrmion Gd2PdSi3|Ram Kumar,Kartik K Iyer,P. L. Paulose,E. V. Sampathkumaran###
(1659708, 1659708)
 We have carried out magnetization, heat capacity, electrical andmagnetoresistance measurements (2-300 K) for the polycrystalline form ofintermetallic compounds, R<missing VAR>2RhSi3 (R<missing VAR> Gd, Tb, and Dy), forming in a AlB2 derivedhexagonal structure with a triangular R<missing VAR> network.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 12, 'K', 2],[132.0, 13.5, 'and', 2],[133.0, 6.5, 'K', 2],[139.0, 6.5, 'and', 2],[140.0, 2.5, 'for', 2]

AlB2
###Magnetic and transport anomalies in R2RhSi3 (R= Gd, Tb, and Dy), resembling those of an exotic magnetic skyrmion Gd2PdSi3|Ram Kumar,Kartik K Iyer,P. L. Paulose,E. V. Sampathkumaran###
(1659718, 1659720)
 We have carried out magnetization, heat capacity, electrical andmagnetoresistance measurements (2-300 K) for the polycrystalline form ofintermetallic compounds, R<missing VAR>2RhSi3 (R<missing VAR> Gd, Tb, and Dy), forming in a AlB2 derivedhexagonal structure with a triangular R<missing VAR> network.
Featurization terminated normally.
0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 12, 'K', 2],[120.0, 13.5, 'and', 2],[121.0, 6.5, 'K', 2],[127.0, 6.5, 'and', 2],[128.0, 2.5, 'for', 2]

Gd2PdSi3
###Magnetic and transport anomalies in R2RhSi3 (R= Gd, Tb, and Dy), resembling those of an exotic magnetic skyrmion Gd2PdSi3|Ram Kumar,Kartik K Iyer,P. L. Paulose,E. V. Sampathkumaran###
(1659763, 1659767)
 This work was primarilymotivated by a revival of interest on Gd2PdSi3 after about two decades in thefield of Toplogical Hall Effect due to magnetic skyrmions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 12, 'K', 1],[73.0, 13.5, 'and', 1],[74.0, 6.5, 'K', 1],[80.0, 6.5, 'and', 1],[81.0, 2.5, 'for', 1]

N
###Magnetic and transport anomalies in R2RhSi3 (R= Gd, Tb, and Dy), resembling those of an exotic magnetic skyrmion Gd2PdSi3|Ram Kumar,Kartik K Iyer,P. L. Paulose,E. V. Sampathkumaran###
(1659828, 1659828)
 We report here thatthese compounds are characterized by double antiferromagnetic transitions (T<missing VAR>N13.5 and 12 K for Gd, 13.5 and 6.5 K for Tb; 6.5 and 2.5 for Dy), butantiferromagnerism seems to be complex.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 12, 'K', 0],[12.0, 13.5, 'and', 0],[13.0, 6.5, 'K', 0],[19.0, 6.5, 'and', 0],[20.0, 2.5, 'for', 0]

Gd
###Magnetic and transport anomalies in R2RhSi3 (R= Gd, Tb, and Dy), resembling those of an exotic magnetic skyrmion Gd2PdSi3|Ram Kumar,Kartik K Iyer,P. L. Paulose,E. V. Sampathkumaran###
(1659838, 1659838)
 We report here thatthese compounds are characterized by double antiferromagnetic transitions (T<missing VAR>N13.5 and 12 K for Gd, 13.5 and 6.5 K for Tb; 6.5 and 2.5 for Dy), butantiferromagnerism seems to be complex.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 12, 'K', 0],[2.0, 13.5, 'and', 0],[3.0, 6.5, 'K', 0],[9.0, 6.5, 'and', 0],[10.0, 2.5, 'for', 0]

Tb
###Magnetic and transport anomalies in R2RhSi3 (R= Gd, Tb, and Dy), resembling those of an exotic magnetic skyrmion Gd2PdSi3|Ram Kumar,Kartik K Iyer,P. L. Paulose,E. V. Sampathkumaran###
(1659845, 1659845)
 We report here thatthese compounds are characterized by double antiferromagnetic transitions (T<missing VAR>N13.5 and 12 K for Gd, 13.5 and 6.5 K for Tb; 6.5 and 2.5 for Dy), butantiferromagnerism seems to be complex.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 12, 'K', 0],[5.0, 13.5, 'and', 0],[4.0, 6.5, 'K', 0],[2.0, 6.5, 'and', 0],[3.0, 2.5, 'for', 0]

Dy
###Magnetic and transport anomalies in R2RhSi3 (R= Gd, Tb, and Dy), resembling those of an exotic magnetic skyrmion Gd2PdSi3|Ram Kumar,Kartik K Iyer,P. L. Paulose,E. V. Sampathkumaran###
(1659850, 1659850)
 We report here thatthese compounds are characterized by double antiferromagnetic transitions (T<missing VAR>N13.5 and 12 K for Gd, 13.5 and 6.5 K for Tb; 6.5 and 2.5 for Dy), butantiferromagnerism seems to be complex.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 12, 'K', 0],[10.0, 13.5, 'and', 0],[9.0, 6.5, 'K', 0],[3.0, 6.5, 'and', 0],[2.0, 2.5, 'for', 0]

Gd2PdSi3
###Magnetic and transport anomalies in R2RhSi3 (R= Gd, Tb, and Dy), resembling those of an exotic magnetic skyrmion Gd2PdSi3|Ram Kumar,Kartik K Iyer,P. L. Paulose,E. V. Sampathkumaran###
(1659916, 1659920)
 The most notable observations common toall these compounds are (i) There are many features in the data mimickingthose seen for Gd2PdSi3, including the two field-induced changes in isothermalmagnetization as though there are two metamagnetic transitions well below T<missing VAR>N.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 12, 'K', 1],[76.0, 13.5, 'and', 1],[75.0, 6.5, 'K', 1],[69.0, 6.5, 'and', 1],[68.0, 2.5, 'for', 1]

N
###Magnetic and transport anomalies in R2RhSi3 (R= Gd, Tb, and Dy), resembling those of an exotic magnetic skyrmion Gd2PdSi3|Ram Kumar,Kartik K Iyer,P. L. Paulose,E. V. Sampathkumaran###
(1659961, 1659961)
 The most notable observations common toall these compounds are (i) There are many features in the data mimickingthose seen for Gd2PdSi3, including the two field-induced changes in isothermalmagnetization as though there are two metamagnetic transitions well below T<missing VAR>N.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 12, 'K', 1],[121.0, 13.5, 'and', 1],[120.0, 6.5, 'K', 1],[114.0, 6.5, 'and', 1],[113.0, 2.5, 'for', 1]

In
###Magnetic and transport anomalies in R2RhSi3 (R= Gd, Tb, and Dy), resembling those of an exotic magnetic skyrmion Gd2PdSi3|Ram Kumar,Kartik K Iyer,P. L. Paulose,E. V. Sampathkumaran###
(1659965, 1659965)
In view of such a resemblance of the properties, we speculate that theseRh-based materials offer a good playground to study toplogical Hall effect in acentrosymmetric structure, with its origin lying in triangular lattice ofmagnetic R<missing VAR> ions; (ii) There is an increasing contribution of electronicscattering with decreasing temperature towards T<missing VAR>N in all cases, similar toGd2PdSi3, thereby serving as examples for a theoretical prediction for aclassical spin-liquid phase in metallic systems due to geometrical frustration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 12, 'K', 2],[125.0, 13.5, 'and', 2],[124.0, 6.5, 'K', 2],[118.0, 6.5, 'and', 2],[117.0, 2.5, 'for', 2]

Rh
###Magnetic and transport anomalies in R2RhSi3 (R= Gd, Tb, and Dy), resembling those of an exotic magnetic skyrmion Gd2PdSi3|Ram Kumar,Kartik K Iyer,P. L. Paulose,E. V. Sampathkumaran###
(1659993, 1659993)
In view of such a resemblance of the properties, we speculate that theseRh-based materials offer a good playground to study toplogical Hall effect in acentrosymmetric structure, with its origin lying in triangular lattice ofmagnetic R<missing VAR> ions; (ii) There is an increasing contribution of electronicscattering with decreasing temperature towards T<missing VAR>N in all cases, similar toGd2PdSi3, thereby serving as examples for a theoretical prediction for aclassical spin-liquid phase in metallic systems due to geometrical frustration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[159.0, 12, 'K', 2],[153.0, 13.5, 'and', 2],[152.0, 6.5, 'K', 2],[146.0, 6.5, 'and', 2],[145.0, 2.5, 'for', 2]

N
###Magnetic and transport anomalies in R2RhSi3 (R= Gd, Tb, and Dy), resembling those of an exotic magnetic skyrmion Gd2PdSi3|Ram Kumar,Kartik K Iyer,P. L. Paulose,E. V. Sampathkumaran###
(1660081, 1660081)
In view of such a resemblance of the properties, we speculate that theseRh-based materials offer a good playground to study toplogical Hall effect in acentrosymmetric structure, with its origin lying in triangular lattice ofmagnetic R<missing VAR> ions; (ii) There is an increasing contribution of electronicscattering with decreasing temperature towards T<missing VAR>N in all cases, similar toGd2PdSi3, thereby serving as examples for a theoretical prediction for aclassical spin-liquid phase in metallic systems due to geometrical frustration.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[247.0, 12, 'K', 2],[241.0, 13.5, 'and', 2],[240.0, 6.5, 'K', 2],[234.0, 6.5, 'and', 2],[233.0, 2.5, 'for', 2]

Gd2PdSi3
###Magnetic and transport anomalies in R2RhSi3 (R= Gd, Tb, and Dy), resembling those of an exotic magnetic skyrmion Gd2PdSi3|Ram Kumar,Kartik K Iyer,P. L. Paulose,E. V. Sampathkumaran###
(1660095, 1660099)
In view of such a resemblance of the properties, we speculate that theseRh-based materials offer a good playground to study toplogical Hall effect in acentrosymmetric structure, with its origin lying in triangular lattice ofmagnetic R<missing VAR> ions; (ii) There is an increasing contribution of electronicscattering with decreasing temperature towards T<missing VAR>N in all cases, similar toGd2PdSi3, thereby serving as examples for a theoretical prediction for aclassical spin-liquid phase in metallic systems due to geometrical frustration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[261.0, 12, 'K', 2],[255.0, 13.5, 'and', 2],[254.0, 6.5, 'K', 2],[248.0, 6.5, 'and', 2],[247.0, 2.5, 'for', 2]

Ar
###Ion beam modification of magnetic tunnel junctions|B. M. S. Teixeira,A. A. Timopheev,N. Caçoilo,L. Cuchet,J. Mondaud,J. R. Childress,S. Magalhães,E. Alves,N. A. Sobolev###
(1660176, 1660176)
 The impact of 400 keV Ar ion irradiation on the magnetic and electricalproperties of in-plane magnetized magnetic tunnel junction (MTJ) stacks wasinvestigated by ferromagnetic resonance, vibrating sample magnetometry andcurrent-in-plane tunneling techniques.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 400, 'keV', 0],[165.0, -2, ',', 2],[305.0, -2, ',', 3]

In
###Ion beam modification of magnetic tunnel junctions|B. M. S. Teixeira,A. A. Timopheev,N. Caçoilo,L. Cuchet,J. Mondaud,J. R. Childress,S. Magalhães,E. Alves,N. A. Sobolev###
(1660321, 1660321)
 In the low-fluence regime, Phi< 1014 cm-2, the parameters required for having a functioning MTJ werepreserved the anisotropy of the FeCoB free layer (FL) was weakly modulatedfollowing a small decrease in the saturation magnetization M<missing VAR>S; the TMRdecreased continuously; the interlayer exchange coupling (IE<missing VAR>C) and the exchangebias (E<missing VAR>B) decreased slightly.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 400, 'keV', 2],[20.0, -2, ',', 0],[160.0, -2, ',', 1]

FeCoB
###Ion beam modification of magnetic tunnel junctions|B. M. S. Teixeira,A. A. Timopheev,N. Caçoilo,L. Cuchet,J. Mondaud,J. R. Childress,S. Magalhães,E. Alves,N. A. Sobolev###
(1660376, 1660378)
 In the low-fluence regime, Phi< 1014 cm-2, the parameters required for having a functioning MTJ werepreserved the anisotropy of the FeCoB free layer (FL) was weakly modulatedfollowing a small decrease in the saturation magnetization M<missing VAR>S; the TMRdecreased continuously; the interlayer exchange coupling (IE<missing VAR>C) and the exchangebias (E<missing VAR>B) decreased slightly.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[202.0, 400, 'keV', 2],[35.0, -2, ',', 0],[103.0, -2, ',', 1]

F
###Ion beam modification of magnetic tunnel junctions|B. M. S. Teixeira,A. A. Timopheev,N. Caçoilo,L. Cuchet,J. Mondaud,J. R. Childress,S. Magalhães,E. Alves,N. A. Sobolev###
(1660385, 1660385)
 In the low-fluence regime, Phi< 1014 cm-2, the parameters required for having a functioning MTJ werepreserved the anisotropy of the FeCoB free layer (FL) was weakly modulatedfollowing a small decrease in the saturation magnetization M<missing VAR>S; the TMRdecreased continuously; the interlayer exchange coupling (IE<missing VAR>C) and the exchangebias (E<missing VAR>B) decreased slightly.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[211.0, 400, 'keV', 2],[44.0, -2, ',', 0],[96.0, -2, ',', 1]

S
###Ion beam modification of magnetic tunnel junctions|B. M. S. Teixeira,A. A. Timopheev,N. Caçoilo,L. Cuchet,J. Mondaud,J. R. Childress,S. Magalhães,E. Alves,N. A. Sobolev###
(1660413, 1660413)
 In the low-fluence regime, Phi< 1014 cm-2, the parameters required for having a functioning MTJ werepreserved the anisotropy of the FeCoB free layer (FL) was weakly modulatedfollowing a small decrease in the saturation magnetization M<missing VAR>S; the TMRdecreased continuously; the interlayer exchange coupling (IE<missing VAR>C) and the exchangebias (E<missing VAR>B) decreased slightly.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[239.0, 400, 'keV', 2],[72.0, -2, ',', 0],[68.0, -2, ',', 1]

I
###Ion beam modification of magnetic tunnel junctions|B. M. S. Teixeira,A. A. Timopheev,N. Caçoilo,L. Cuchet,J. Mondaud,J. R. Childress,S. Magalhães,E. Alves,N. A. Sobolev###
(1660437, 1660437)
 In the low-fluence regime, Phi< 1014 cm-2, the parameters required for having a functioning MTJ werepreserved the anisotropy of the FeCoB free layer (FL) was weakly modulatedfollowing a small decrease in the saturation magnetization M<missing VAR>S; the TMRdecreased continuously; the interlayer exchange coupling (IE<missing VAR>C) and the exchangebias (E<missing VAR>B) decreased slightly.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[263.0, 400, 'keV', 2],[96.0, -2, ',', 0],[44.0, -2, ',', 1]

C
###Ion beam modification of magnetic tunnel junctions|B. M. S. Teixeira,A. A. Timopheev,N. Caçoilo,L. Cuchet,J. Mondaud,J. R. Childress,S. Magalhães,E. Alves,N. A. Sobolev###
(1660439, 1660439)
 In the low-fluence regime, Phi< 1014 cm-2, the parameters required for having a functioning MTJ werepreserved the anisotropy of the FeCoB free layer (FL) was weakly modulatedfollowing a small decrease in the saturation magnetization M<missing VAR>S; the TMRdecreased continuously; the interlayer exchange coupling (IE<missing VAR>C) and the exchangebias (E<missing VAR>B) decreased slightly.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[265.0, 400, 'keV', 2],[98.0, -2, ',', 0],[42.0, -2, ',', 1]

B
###Ion beam modification of magnetic tunnel junctions|B. M. S. Teixeira,A. A. Timopheev,N. Caçoilo,L. Cuchet,J. Mondaud,J. R. Childress,S. Magalhães,E. Alves,N. A. Sobolev###
(1660453, 1660453)
 In the low-fluence regime, Phi< 1014 cm-2, the parameters required for having a functioning MTJ werepreserved the anisotropy of the FeCoB free layer (FL) was weakly modulatedfollowing a small decrease in the saturation magnetization M<missing VAR>S; the TMRdecreased continuously; the interlayer exchange coupling (IE<missing VAR>C) and the exchangebias (E<missing VAR>B) decreased slightly.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[279.0, 400, 'keV', 2],[112.0, -2, ',', 0],[28.0, -2, ',', 1]

In
###Ion beam modification of magnetic tunnel junctions|B. M. S. Teixeira,A. A. Timopheev,N. Caçoilo,L. Cuchet,J. Mondaud,J. R. Childress,S. Magalhães,E. Alves,N. A. Sobolev###
(1660461, 1660461)
 In the high-fluence regime, Phi > 1014cm-2, the MTJ was rendered inoperative the modulation of the FL<missing VAR> anisotropywas strong, caused by a strong decrease in M<missing VAR>S, ascribed to a high degree ofinterface intermixing between the FL<missing VAR> and the Ta capping; the E<missing VAR>B and IE<missing VAR>C werealso lost, likely due to intermixing of the layers composing the syntheticantiferromagnet; and the TMR vanished due to the irradiation-induceddeterioration of the MgO barrier and MgO/FeCoB interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[287.0, 400, 'keV', 3],[120.0, -2, ',', 1],[20.0, -2, ',', 0]

F
###Ion beam modification of magnetic tunnel junctions|B. M. S. Teixeira,A. A. Timopheev,N. Caçoilo,L. Cuchet,J. Mondaud,J. R. Childress,S. Magalhães,E. Alves,N. A. Sobolev###
(1660505, 1660505)
 In the high-fluence regime, Phi > 1014cm-2, the MTJ was rendered inoperative the modulation of the FL<missing VAR> anisotropywas strong, caused by a strong decrease in M<missing VAR>S, ascribed to a high degree ofinterface intermixing between the FL<missing VAR> and the Ta capping; the E<missing VAR>B and IE<missing VAR>C werealso lost, likely due to intermixing of the layers composing the syntheticantiferromagnet; and the TMR vanished due to the irradiation-induceddeterioration of the MgO barrier and MgO/FeCoB interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[331.0, 400, 'keV', 3],[164.0, -2, ',', 1],[24.0, -2, ',', 0]

S
###Ion beam modification of magnetic tunnel junctions|B. M. S. Teixeira,A. A. Timopheev,N. Caçoilo,L. Cuchet,J. Mondaud,J. R. Childress,S. Magalhães,E. Alves,N. A. Sobolev###
(1660529, 1660529)
 In the high-fluence regime, Phi > 1014cm-2, the MTJ was rendered inoperative the modulation of the FL<missing VAR> anisotropywas strong, caused by a strong decrease in M<missing VAR>S, ascribed to a high degree ofinterface intermixing between the FL<missing VAR> and the Ta capping; the E<missing VAR>B and IE<missing VAR>C werealso lost, likely due to intermixing of the layers composing the syntheticantiferromagnet; and the TMR vanished due to the irradiation-induceddeterioration of the MgO barrier and MgO/FeCoB interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[355.0, 400, 'keV', 3],[188.0, -2, ',', 1],[48.0, -2, ',', 0]

F
###Ion beam modification of magnetic tunnel junctions|B. M. S. Teixeira,A. A. Timopheev,N. Caçoilo,L. Cuchet,J. Mondaud,J. R. Childress,S. Magalhães,E. Alves,N. A. Sobolev###
(1660553, 1660553)
 In the high-fluence regime, Phi > 1014cm-2, the MTJ was rendered inoperative the modulation of the FL<missing VAR> anisotropywas strong, caused by a strong decrease in M<missing VAR>S, ascribed to a high degree ofinterface intermixing between the FL<missing VAR> and the Ta capping; the E<missing VAR>B and IE<missing VAR>C werealso lost, likely due to intermixing of the layers composing the syntheticantiferromagnet; and the TMR vanished due to the irradiation-induceddeterioration of the MgO barrier and MgO/FeCoB interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[379.0, 400, 'keV', 3],[212.0, -2, ',', 1],[72.0, -2, ',', 0]

Ta
###Ion beam modification of magnetic tunnel junctions|B. M. S. Teixeira,A. A. Timopheev,N. Caçoilo,L. Cuchet,J. Mondaud,J. R. Childress,S. Magalhães,E. Alves,N. A. Sobolev###
(1660560, 1660560)
 In the high-fluence regime, Phi > 1014cm-2, the MTJ was rendered inoperative the modulation of the FL<missing VAR> anisotropywas strong, caused by a strong decrease in M<missing VAR>S, ascribed to a high degree ofinterface intermixing between the FL<missing VAR> and the Ta capping; the E<missing VAR>B and IE<missing VAR>C werealso lost, likely due to intermixing of the layers composing the syntheticantiferromagnet; and the TMR vanished due to the irradiation-induceddeterioration of the MgO barrier and MgO/FeCoB interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[386.0, 400, 'keV', 3],[219.0, -2, ',', 1],[79.0, -2, ',', 0]

B
###Ion beam modification of magnetic tunnel junctions|B. M. S. Teixeira,A. A. Timopheev,N. Caçoilo,L. Cuchet,J. Mondaud,J. R. Childress,S. Magalhães,E. Alves,N. A. Sobolev###
(1660568, 1660568)
 In the high-fluence regime, Phi > 1014cm-2, the MTJ was rendered inoperative the modulation of the FL<missing VAR> anisotropywas strong, caused by a strong decrease in M<missing VAR>S, ascribed to a high degree ofinterface intermixing between the FL<missing VAR> and the Ta capping; the E<missing VAR>B and IE<missing VAR>C werealso lost, likely due to intermixing of the layers composing the syntheticantiferromagnet; and the TMR vanished due to the irradiation-induceddeterioration of the MgO barrier and MgO/FeCoB interfaces.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[394.0, 400, 'keV', 3],[227.0, -2, ',', 1],[87.0, -2, ',', 0]

I
###Ion beam modification of magnetic tunnel junctions|B. M. S. Teixeira,A. A. Timopheev,N. Caçoilo,L. Cuchet,J. Mondaud,J. R. Childress,S. Magalhães,E. Alves,N. A. Sobolev###
(1660572, 1660572)
 In the high-fluence regime, Phi > 1014cm-2, the MTJ was rendered inoperative the modulation of the FL<missing VAR> anisotropywas strong, caused by a strong decrease in M<missing VAR>S, ascribed to a high degree ofinterface intermixing between the FL<missing VAR> and the Ta capping; the E<missing VAR>B and IE<missing VAR>C werealso lost, likely due to intermixing of the layers composing the syntheticantiferromagnet; and the TMR vanished due to the irradiation-induceddeterioration of the MgO barrier and MgO/FeCoB interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[398.0, 400, 'keV', 3],[231.0, -2, ',', 1],[91.0, -2, ',', 0]

C
###Ion beam modification of magnetic tunnel junctions|B. M. S. Teixeira,A. A. Timopheev,N. Caçoilo,L. Cuchet,J. Mondaud,J. R. Childress,S. Magalhães,E. Alves,N. A. Sobolev###
(1660574, 1660574)
 In the high-fluence regime, Phi > 1014cm-2, the MTJ was rendered inoperative the modulation of the FL<missing VAR> anisotropywas strong, caused by a strong decrease in M<missing VAR>S, ascribed to a high degree ofinterface intermixing between the FL<missing VAR> and the Ta capping; the E<missing VAR>B and IE<missing VAR>C werealso lost, likely due to intermixing of the layers composing the syntheticantiferromagnet; and the TMR vanished due to the irradiation-induceddeterioration of the MgO barrier and MgO/FeCoB interfaces.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[400.0, 400, 'keV', 3],[233.0, -2, ',', 1],[93.0, -2, ',', 0]

MgO
###Ion beam modification of magnetic tunnel junctions|B. M. S. Teixeira,A. A. Timopheev,N. Caçoilo,L. Cuchet,J. Mondaud,J. R. Childress,S. Magalhães,E. Alves,N. A. Sobolev###
(1660635, 1660636)
 In the high-fluence regime, Phi > 1014cm-2, the MTJ was rendered inoperative the modulation of the FL<missing VAR> anisotropywas strong, caused by a strong decrease in M<missing VAR>S, ascribed to a high degree ofinterface intermixing between the FL<missing VAR> and the Ta capping; the E<missing VAR>B and IE<missing VAR>C werealso lost, likely due to intermixing of the layers composing the syntheticantiferromagnet; and the TMR vanished due to the irradiation-induceddeterioration of the MgO barrier and MgO/FeCoB interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[461.0, 400, 'keV', 3],[294.0, -2, ',', 1],[154.0, -2, ',', 0]

MgO/FeCoB
###Ion beam modification of magnetic tunnel junctions|B. M. S. Teixeira,A. A. Timopheev,N. Caçoilo,L. Cuchet,J. Mondaud,J. R. Childress,S. Magalhães,E. Alves,N. A. Sobolev###
(1660642, 1660647)
 In the high-fluence regime, Phi > 1014cm-2, the MTJ was rendered inoperative the modulation of the FL<missing VAR> anisotropywas strong, caused by a strong decrease in M<missing VAR>S, ascribed to a high degree ofinterface intermixing between the FL<missing VAR> and the Ta capping; the E<missing VAR>B and IE<missing VAR>C werealso lost, likely due to intermixing of the layers composing the syntheticantiferromagnet; and the TMR vanished due to the irradiation-induceddeterioration of the MgO barrier and MgO/FeCoB interfaces.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[468.0, 400, 'keV', 3],[301.0, -2, ',', 1],[161.0, -2, ',', 0]

F
###Ion beam modification of magnetic tunnel junctions|B. M. S. Teixeira,A. A. Timopheev,N. Caçoilo,L. Cuchet,J. Mondaud,J. R. Childress,S. Magalhães,E. Alves,N. A. Sobolev###
(1660667, 1660667)
 We demonstrate thatthe layers surrounding the FL<missing VAR> play a decisive role in determining the trend ofthe magnetic anisotropy evolution resulting from the irradiation, and that anion-fluence window exists where such a modulation of magnetic anisotropy canoccur, while not losing the TMR or the magnetic configuration of the MTJ.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[493.0, 400, 'keV', 4],[326.0, -2, ',', 2],[186.0, -2, ',', 1]

BiFeO3/CoFe
###A micromagnetic study of the switching dynamics of the BiFeO$_3$/CoFe heterojunction|Yu-Ching Liao,Dmitri E. Nikonov,Sourav Dutta,Sou-Chi Chang,Chia-Sheng Hsu,Ian A. Young,Azad Naeemi###
(1660796, 1660802)
A micromagnetic study of the switching dynamics of the BiFeO3/CoFe heterojunction.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[122.0, 100, 'ps', 2],[234.0, 0.32, 'pJ', 4]

BiFeO3/CoFe
###A micromagnetic study of the switching dynamics of the BiFeO$_3$/CoFe heterojunction|Yu-Ching Liao,Dmitri E. Nikonov,Sourav Dutta,Sou-Chi Chang,Chia-Sheng Hsu,Ian A. Young,Azad Naeemi###
(1660821, 1660827)
 The switching dynamics of a single-domain BiFeO3/CoFe heterojunction ismodeled and key parameters such as interface exchange coupling coefficient areextracted from experimental results.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[97.0, 100, 'ps', 1],[209.0, 0.32, 'pJ', 3]

CoFe
###A micromagnetic study of the switching dynamics of the BiFeO$_3$/CoFe heterojunction|Yu-Ching Liao,Dmitri E. Nikonov,Sourav Dutta,Sou-Chi Chang,Chia-Sheng Hsu,Ian A. Young,Azad Naeemi###
(1660887, 1660888)
 The lower limit of the magnetic orderresponse time of CoFe in the BiFeO3/CoFe heterojunction is theoreticallyquantified to be on to the order of 100 ps.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 100, 'ps', 0],[148.0, 0.32, 'pJ', 2]

BiFeO3/CoFe
###A micromagnetic study of the switching dynamics of the BiFeO$_3$/CoFe heterojunction|Yu-Ching Liao,Dmitri E. Nikonov,Sourav Dutta,Sou-Chi Chang,Chia-Sheng Hsu,Ian A. Young,Azad Naeemi###
(1660894, 1660900)
 The lower limit of the magnetic orderresponse time of CoFe in the BiFeO3/CoFe heterojunction is theoreticallyquantified to be on to the order of 100 ps.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[24.0, 100, 'ps', 0],[136.0, 0.32, 'pJ', 2]

CoFe
###A micromagnetic study of the switching dynamics of the BiFeO$_3$/CoFe heterojunction|Yu-Ching Liao,Dmitri E. Nikonov,Sourav Dutta,Sou-Chi Chang,Chia-Sheng Hsu,Ian A. Young,Azad Naeemi###
(1660944, 1660945)
 Our results indicate that theswitching behavior of CoFe in the BiFeO3/CoFe heterojunction is dominated bythe rotation of the Neel vector in BiFeO3 rather than the unidirectionalexchange bias at the interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 100, 'ps', 1],[91.0, 0.32, 'pJ', 1]

BiFeO3/CoFe
###A micromagnetic study of the switching dynamics of the BiFeO$_3$/CoFe heterojunction|Yu-Ching Liao,Dmitri E. Nikonov,Sourav Dutta,Sou-Chi Chang,Chia-Sheng Hsu,Ian A. Young,Azad Naeemi###
(1660951, 1660957)
 Our results indicate that theswitching behavior of CoFe in the BiFeO3/CoFe heterojunction is dominated bythe rotation of the Neel vector in BiFeO3 rather than the unidirectionalexchange bias at the interface.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[27.0, 100, 'ps', 1],[79.0, 0.32, 'pJ', 1]

BiFeO3
###A micromagnetic study of the switching dynamics of the BiFeO$_3$/CoFe heterojunction|Yu-Ching Liao,Dmitri E. Nikonov,Sourav Dutta,Sou-Chi Chang,Chia-Sheng Hsu,Ian A. Young,Azad Naeemi###
(1660982, 1660985)
 Our results indicate that theswitching behavior of CoFe in the BiFeO3/CoFe heterojunction is dominated bythe rotation of the Neel vector in BiFeO3 rather than the unidirectionalexchange bias at the interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 100, 'ps', 1],[51.0, 0.32, 'pJ', 1]

BiFeO3/CoFe
###A micromagnetic study of the switching dynamics of the BiFeO$_3$/CoFe heterojunction|Yu-Ching Liao,Dmitri E. Nikonov,Sourav Dutta,Sou-Chi Chang,Chia-Sheng Hsu,Ian A. Young,Azad Naeemi###
(1661156, 1661162)
Furthermore, we demonstrate that the switching success rate and the thermalstability of the BiFeO3/CoFe heterojunction can be improved by reducing thethickness of CoFe and increasing the length to width aspect ratio of theBiFeO3/CoFe heterojunction.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[232.0, 100, 'ps', 4],[120.0, 0.32, 'pJ', 2]

CoFe
###A micromagnetic study of the switching dynamics of the BiFeO$_3$/CoFe heterojunction|Yu-Ching Liao,Dmitri E. Nikonov,Sourav Dutta,Sou-Chi Chang,Chia-Sheng Hsu,Ian A. Young,Azad Naeemi###
(1661183, 1661184)
Furthermore, we demonstrate that the switching success rate and the thermalstability of the BiFeO3/CoFe heterojunction can be improved by reducing thethickness of CoFe and increasing the length to width aspect ratio of theBiFeO3/CoFe heterojunction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[259.0, 100, 'ps', 4],[147.0, 0.32, 'pJ', 2]

BiFeO3/CoFe
###A micromagnetic study of the switching dynamics of the BiFeO$_3$/CoFe heterojunction|Yu-Ching Liao,Dmitri E. Nikonov,Sourav Dutta,Sou-Chi Chang,Chia-Sheng Hsu,Ian A. Young,Azad Naeemi###
(1661207, 1661213)
Furthermore, we demonstrate that the switching success rate and the thermalstability of the BiFeO3/CoFe heterojunction can be improved by reducing thethickness of CoFe and increasing the length to width aspect ratio of theBiFeO3/CoFe heterojunction.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[283.0, 100, 'ps', 4],[171.0, 0.32, 'pJ', 2]

CoFe
###A micromagnetic study of the switching dynamics of the BiFeO$_3$/CoFe heterojunction|Yu-Ching Liao,Dmitri E. Nikonov,Sourav Dutta,Sou-Chi Chang,Chia-Sheng Hsu,Ian A. Young,Azad Naeemi###
(1661260, 1661261)
 Our theoretical model provides a comprehensiveframework to study the magnetoelectric properties and the manipulation of themagnetic order of CoFe in the BiFeO3/CoFe heterojunction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[336.0, 100, 'ps', 5],[224.0, 0.32, 'pJ', 3]

BiFeO3/CoFe
###A micromagnetic study of the switching dynamics of the BiFeO$_3$/CoFe heterojunction|Yu-Ching Liao,Dmitri E. Nikonov,Sourav Dutta,Sou-Chi Chang,Chia-Sheng Hsu,Ian A. Young,Azad Naeemi###
(1661267, 1661273)
 Our theoretical model provides a comprehensiveframework to study the magnetoelectric properties and the manipulation of themagnetic order of CoFe in the BiFeO3/CoFe heterojunction.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[343.0, 100, 'ps', 5],[231.0, 0.32, 'pJ', 3]

WTe2
###Synthesis of WTe2 thin films and highly-crystalline nanobelts from pre-deposited reactants|John B. Mc Manus,Cansu Ilhan,Bastien Balsamo,Clive Downing,Conor P. Cullen,Tanja Stimpfel-Lidner,Graeme Cunningham,Lisanne Peters,Lewys Jones,Daragh Mullarkey,Igor V. Shvets,Georg S. Duesberg,Niall McEvoy###
(1661290, 1661292)
Synthesis of WTe2 thin films and highly-crystalline nanobelts from pre-deposited reactants.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[303.0, 550, 'degC', 6]

WTe2
###Synthesis of WTe2 thin films and highly-crystalline nanobelts from pre-deposited reactants|John B. Mc Manus,Cansu Ilhan,Bastien Balsamo,Clive Downing,Conor P. Cullen,Tanja Stimpfel-Lidner,Graeme Cunningham,Lisanne Peters,Lewys Jones,Daragh Mullarkey,Igor V. Shvets,Georg S. Duesberg,Niall McEvoy###
(1661357, 1661359)
 WTe2 hasdemonstrated large non-saturating magnetoresistance, potential for spintronicapplications and promise as a type-II Weyl semimetal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[236.0, 550, 'degC', 4]

II
###Synthesis of WTe2 thin films and highly-crystalline nanobelts from pre-deposited reactants|John B. Mc Manus,Cansu Ilhan,Bastien Balsamo,Clive Downing,Conor P. Cullen,Tanja Stimpfel-Lidner,Graeme Cunningham,Lisanne Peters,Lewys Jones,Daragh Mullarkey,Igor V. Shvets,Georg S. Duesberg,Niall McEvoy###
(1661394, 1661395)
 WTe2 hasdemonstrated large non-saturating magnetoresistance, potential for spintronicapplications and promise as a type-II Weyl semimetal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[200.0, 550, 'degC', 4]

WTe2
###Synthesis of WTe2 thin films and highly-crystalline nanobelts from pre-deposited reactants|John B. Mc Manus,Cansu Ilhan,Bastien Balsamo,Clive Downing,Conor P. Cullen,Tanja Stimpfel-Lidner,Graeme Cunningham,Lisanne Peters,Lewys Jones,Daragh Mullarkey,Igor V. Shvets,Georg S. Duesberg,Niall McEvoy###
(1661413, 1661415)
 The majority of works onWTe2 have relied on mechanically-exfoliated flakes from chemical vapourtransport (CVT) grown crystals for their investigations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[180.0, 550, 'degC', 3]

CV
###Synthesis of WTe2 thin films and highly-crystalline nanobelts from pre-deposited reactants|John B. Mc Manus,Cansu Ilhan,Bastien Balsamo,Clive Downing,Conor P. Cullen,Tanja Stimpfel-Lidner,Graeme Cunningham,Lisanne Peters,Lewys Jones,Daragh Mullarkey,Igor V. Shvets,Georg S. Duesberg,Niall McEvoy###
(1661439, 1661440)
 The majority of works onWTe2 have relied on mechanically-exfoliated flakes from chemical vapourtransport (CVT) grown crystals for their investigations.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 550, 'degC', 3]

In
###Synthesis of WTe2 thin films and highly-crystalline nanobelts from pre-deposited reactants|John B. Mc Manus,Cansu Ilhan,Bastien Balsamo,Clive Downing,Conor P. Cullen,Tanja Stimpfel-Lidner,Graeme Cunningham,Lisanne Peters,Lewys Jones,Daragh Mullarkey,Igor V. Shvets,Georg S. Duesberg,Niall McEvoy###
(1661511, 1661511)
 In this work, a synthesis method is demonstrated that allowsthe production of large-area polycrystalline films of WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 550, 'degC', 1]

WTe2
###Synthesis of WTe2 thin films and highly-crystalline nanobelts from pre-deposited reactants|John B. Mc Manus,Cansu Ilhan,Bastien Balsamo,Clive Downing,Conor P. Cullen,Tanja Stimpfel-Lidner,Graeme Cunningham,Lisanne Peters,Lewys Jones,Daragh Mullarkey,Igor V. Shvets,Georg S. Duesberg,Niall McEvoy###
(1661549, 1661551)
 In this work, a synthesis method is demonstrated that allowsthe production of large-area polycrystalline films of WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 550, 'degC', 1]

W
###Synthesis of WTe2 thin films and highly-crystalline nanobelts from pre-deposited reactants|John B. Mc Manus,Cansu Ilhan,Bastien Balsamo,Clive Downing,Conor P. Cullen,Tanja Stimpfel-Lidner,Graeme Cunningham,Lisanne Peters,Lewys Jones,Daragh Mullarkey,Igor V. Shvets,Georg S. Duesberg,Niall McEvoy###
(1661577, 1661577)
 This is achieved bythe reaction of pre-deposited films of W and Te at a relatively low temperatureof 550 degC.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 550, 'degC', 0]

Te
###Synthesis of WTe2 thin films and highly-crystalline nanobelts from pre-deposited reactants|John B. Mc Manus,Cansu Ilhan,Bastien Balsamo,Clive Downing,Conor P. Cullen,Tanja Stimpfel-Lidner,Graeme Cunningham,Lisanne Peters,Lewys Jones,Daragh Mullarkey,Igor V. Shvets,Georg S. Duesberg,Niall McEvoy###
(1661581, 1661581)
 This is achieved bythe reaction of pre-deposited films of W and Te at a relatively low temperatureof 550 degC.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 550, 'degC', 0]

WTe2
###Synthesis of WTe2 thin films and highly-crystalline nanobelts from pre-deposited reactants|John B. Mc Manus,Cansu Ilhan,Bastien Balsamo,Clive Downing,Conor P. Cullen,Tanja Stimpfel-Lidner,Graeme Cunningham,Lisanne Peters,Lewys Jones,Daragh Mullarkey,Igor V. Shvets,Georg S. Duesberg,Niall McEvoy###
(1661633, 1661635)
 Sputter X<missing VAR>-ray photoelectron spectroscopy reveals the rapid butself-limiting nature of the oxidation of these WTe2 films in ambientconditions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 550, 'degC', 1]

WTe2
###Synthesis of WTe2 thin films and highly-crystalline nanobelts from pre-deposited reactants|John B. Mc Manus,Cansu Ilhan,Bastien Balsamo,Clive Downing,Conor P. Cullen,Tanja Stimpfel-Lidner,Graeme Cunningham,Lisanne Peters,Lewys Jones,Daragh Mullarkey,Igor V. Shvets,Georg S. Duesberg,Niall McEvoy###
(1661649, 1661651)
 The WTe2 films are composed of areas of micrometre sized nanobeltsthat can be isolated and offer potential as an alternative to CVT<missing VAR>-grownsamples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 550, 'degC', 2]

CV
###Synthesis of WTe2 thin films and highly-crystalline nanobelts from pre-deposited reactants|John B. Mc Manus,Cansu Ilhan,Bastien Balsamo,Clive Downing,Conor P. Cullen,Tanja Stimpfel-Lidner,Graeme Cunningham,Lisanne Peters,Lewys Jones,Daragh Mullarkey,Igor V. Shvets,Georg S. Duesberg,Niall McEvoy###
(1661694, 1661695)
 The WTe2 films are composed of areas of micrometre sized nanobeltsthat can be isolated and offer potential as an alternative to CVT<missing VAR>-grownsamples.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 550, 'degC', 2]

S
###Strong interfacial exchange field in a heavy metal/ferromagnetic insulator system determined by spin Hall magnetoresistance|Juan M. Gomez-Perez,Xian-Peng Zhang,Francesco Calavalle,Maxim Ilyn,Carmen González-Orellana,Marco Gobbi,Celia Rogero,Andrey Chuvilin,Vitaly N. Golovach,Luis E. Hueso,F. Sebastian Bergeret,Fèlix Casanova###
(1661887, 1661887)
 Here, we report the first measurement of the spin Hallmagnetoresistance (SMR) of Pt on a purely ferromagnetic insulator (EuS).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[174.0, 1, 'meV', 3]

Pt
###Strong interfacial exchange field in a heavy metal/ferromagnetic insulator system determined by spin Hall magnetoresistance|Juan M. Gomez-Perez,Xian-Peng Zhang,Francesco Calavalle,Maxim Ilyn,Carmen González-Orellana,Marco Gobbi,Celia Rogero,Andrey Chuvilin,Vitaly N. Golovach,Luis E. Hueso,F. Sebastian Bergeret,Fèlix Casanova###
(1661894, 1661894)
 Here, we report the first measurement of the spin Hallmagnetoresistance (SMR) of Pt on a purely ferromagnetic insulator (EuS).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 1, 'meV', 3]

(EuS)
###Strong interfacial exchange field in a heavy metal/ferromagnetic insulator system determined by spin Hall magnetoresistance|Juan M. Gomez-Perez,Xian-Peng Zhang,Francesco Calavalle,Maxim Ilyn,Carmen González-Orellana,Marco Gobbi,Celia Rogero,Andrey Chuvilin,Vitaly N. Golovach,Luis E. Hueso,F. Sebastian Bergeret,Fèlix Casanova###
(1661906, 1661909)
 Here, we report the first measurement of the spin Hallmagnetoresistance (SMR) of Pt on a purely ferromagnetic insulator (EuS).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 1, 'meV', 3]

S
###Strong interfacial exchange field in a heavy metal/ferromagnetic insulator system determined by spin Hall magnetoresistance|Juan M. Gomez-Perez,Xian-Peng Zhang,Francesco Calavalle,Maxim Ilyn,Carmen González-Orellana,Marco Gobbi,Celia Rogero,Andrey Chuvilin,Vitaly N. Golovach,Luis E. Hueso,F. Sebastian Bergeret,Fèlix Casanova###
(1661917, 1661917)
 Weperform SMR measurements in a wide range of temperatures and fit the results byusing a microscopic model.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 1, 'meV', 2]

Pt
###Strong interfacial exchange field in a heavy metal/ferromagnetic insulator system determined by spin Hall magnetoresistance|Juan M. Gomez-Perez,Xian-Peng Zhang,Francesco Calavalle,Maxim Ilyn,Carmen González-Orellana,Marco Gobbi,Celia Rogero,Andrey Chuvilin,Vitaly N. Golovach,Luis E. Hueso,F. Sebastian Bergeret,Fèlix Casanova###
(1662075, 1662075)
 An interfacial exchange fieldof the order of 1 meV acting upon the conduction electrons of Pt can beestimated from Gi, which is at least three times larger than Gr below theCurie temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 1, 'meV', 0]

Bi0.97-xSb0.03
###Magneto-transport and Berry phase in magnetically doped Bi$_{0.97-x}$Sb$_{0.03}$ single crystals|V. K. Maurya,Manju Mishra Patidar,Anita Dhaka,R. Rawat,V. Ganesan,R. S. Dhaka###
(1662211, 1662216)
Magneto-transport and Berry phase in magnetically doped Bi0.97-xSb0.03 single crystals.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[71.0, 0, ',', 1],[166.0, 80, 'meV', 3],[169.0, 15, 'Tesla', 3],[176.0, 0, 'sample', 3],[199.0, 15, 'Tesla', 4],[454.0, 100, 'K', 8]

H
###Magneto-transport and Berry phase in magnetically doped Bi$_{0.97-x}$Sb$_{0.03}$ single crystals|V. K. Maurya,Manju Mishra Patidar,Anita Dhaka,R. Rawat,V. Ganesan,R. S. Dhaka###
(1662246, 1662246)
 We report large magnetoresistance (MR) and Shubnikov-de Haas (SdH)oscillations in single crystals of magnetically (M<missing VAR> Ni and Fe) dopedMxBi0.97-xSb0.03 (x<missing VAR> 0, 0.02) topological insulators.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 0, ',', 0],[136.0, 80, 'meV', 2],[139.0, 15, 'Tesla', 2],[146.0, 0, 'sample', 2],[169.0, 15, 'Tesla', 3],[424.0, 100, 'K', 7]

Ni
###Magneto-transport and Berry phase in magnetically doped Bi$_{0.97-x}$Sb$_{0.03}$ single crystals|V. K. Maurya,Manju Mishra Patidar,Anita Dhaka,R. Rawat,V. Ganesan,R. S. Dhaka###
(1662265, 1662265)
 We report large magnetoresistance (MR) and Shubnikov-de Haas (SdH)oscillations in single crystals of magnetically (M<missing VAR> Ni and Fe) dopedMxBi0.97-xSb0.03 (x<missing VAR> 0, 0.02) topological insulators.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 0, ',', 0],[117.0, 80, 'meV', 2],[120.0, 15, 'Tesla', 2],[127.0, 0, 'sample', 2],[150.0, 15, 'Tesla', 3],[405.0, 100, 'K', 7]

Fe
###Magneto-transport and Berry phase in magnetically doped Bi$_{0.97-x}$Sb$_{0.03}$ single crystals|V. K. Maurya,Manju Mishra Patidar,Anita Dhaka,R. Rawat,V. Ganesan,R. S. Dhaka###
(1662269, 1662269)
 We report large magnetoresistance (MR) and Shubnikov-de Haas (SdH)oscillations in single crystals of magnetically (M<missing VAR> Ni and Fe) dopedMxBi0.97-xSb0.03 (x<missing VAR> 0, 0.02) topological insulators.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 0, ',', 0],[113.0, 80, 'meV', 2],[116.0, 15, 'Tesla', 2],[123.0, 0, 'sample', 2],[146.0, 15, 'Tesla', 3],[401.0, 100, 'K', 7]

Bi0.97-xSb0.03
###Magneto-transport and Berry phase in magnetically doped Bi$_{0.97-x}$Sb$_{0.03}$ single crystals|V. K. Maurya,Manju Mishra Patidar,Anita Dhaka,R. Rawat,V. Ganesan,R. S. Dhaka###
(1662277, 1662282)
 We report large magnetoresistance (MR) and Shubnikov-de Haas (SdH)oscillations in single crystals of magnetically (M<missing VAR> Ni and Fe) dopedMxBi0.97-xSb0.03 (x<missing VAR> 0, 0.02) topological insulators.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[5.0, 0, ',', 0],[100.0, 80, 'meV', 2],[103.0, 15, 'Tesla', 2],[110.0, 0, 'sample', 2],[133.0, 15, 'Tesla', 3],[388.0, 100, 'K', 7]

H
###Magneto-transport and Berry phase in magnetically doped Bi$_{0.97-x}$Sb$_{0.03}$ single crystals|V. K. Maurya,Manju Mishra Patidar,Anita Dhaka,R. Rawat,V. Ganesan,R. S. Dhaka###
(1662426, 1662426)
 Moreover, we observe linearbehavior of MR up to 15 Tesla in transverse mode and SdH oscillations inlongitudinal mode where the field direction is with respect to the current andcrystal plane.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 0, ',', 3],[44.0, 80, 'meV', 1],[41.0, 15, 'Tesla', 1],[34.0, 0, 'sample', 1],[11.0, 15, 'Tesla', 0],[244.0, 100, 'K', 4]

H
###Magneto-transport and Berry phase in magnetically doped Bi$_{0.97-x}$Sb$_{0.03}$ single crystals|V. K. Maurya,Manju Mishra Patidar,Anita Dhaka,R. Rawat,V. Ganesan,R. S. Dhaka###
(1662515, 1662515)
 For the parent sample, we found the coherence length L<missing VAR>phi12.7 nm through the fitting of MR data in transverse mode with modified H-L<missing VAR>-Nequation.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[228.0, 0, ',', 4],[133.0, 80, 'meV', 2],[130.0, 15, 'Tesla', 2],[123.0, 0, 'sample', 2],[100.0, 15, 'Tesla', 1],[155.0, 100, 'K', 3]

N
###Magneto-transport and Berry phase in magnetically doped Bi$_{0.97-x}$Sb$_{0.03}$ single crystals|V. K. Maurya,Manju Mishra Patidar,Anita Dhaka,R. Rawat,V. Ganesan,R. S. Dhaka###
(1662519, 1662519)
 For the parent sample, we found the coherence length L<missing VAR>phi12.7 nm through the fitting of MR data in transverse mode with modified H-L<missing VAR>-Nequation.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[232.0, 0, ',', 4],[137.0, 80, 'meV', 2],[134.0, 15, 'Tesla', 2],[127.0, 0, 'sample', 2],[104.0, 15, 'Tesla', 1],[151.0, 100, 'K', 3]

H
###Magneto-transport and Berry phase in magnetically doped Bi$_{0.97-x}$Sb$_{0.03}$ single crystals|V. K. Maurya,Manju Mishra Patidar,Anita Dhaka,R. Rawat,V. Ganesan,R. S. Dhaka###
(1662534, 1662534)
 The extracted frequencies of SdH oscillations using the fast Fouriertransform method and Landau level (LL) fan diagram are found to be consistentfor the parent and Ni doped samples.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[247.0, 0, ',', 5],[152.0, 80, 'meV', 3],[149.0, 15, 'Tesla', 3],[142.0, 0, 'sample', 3],[119.0, 15, 'Tesla', 2],[136.0, 100, 'K', 2]

Ni
###Magneto-transport and Berry phase in magnetically doped Bi$_{0.97-x}$Sb$_{0.03}$ single crystals|V. K. Maurya,Manju Mishra Patidar,Anita Dhaka,R. Rawat,V. Ganesan,R. S. Dhaka###
(1662585, 1662585)
 The extracted frequencies of SdH oscillations using the fast Fouriertransform method and Landau level (LL) fan diagram are found to be consistentfor the parent and Ni doped samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[298.0, 0, ',', 5],[203.0, 80, 'meV', 3],[200.0, 15, 'Tesla', 3],[193.0, 0, 'sample', 3],[170.0, 15, 'Tesla', 2],[85.0, 100, 'K', 2]

Ni
###Magneto-transport and Berry phase in magnetically doped Bi$_{0.97-x}$Sb$_{0.03}$ single crystals|V. K. Maurya,Manju Mishra Patidar,Anita Dhaka,R. Rawat,V. Ganesan,R. S. Dhaka###
(1662617, 1662617)
 The determined Fermi surface area is foundto be slightly larger in Ni doped as compared to the parent sample possibly dueto change in the Fermi energy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[330.0, 0, ',', 6],[235.0, 80, 'meV', 4],[232.0, 15, 'Tesla', 4],[225.0, 0, 'sample', 4],[202.0, 15, 'Tesla', 3],[53.0, 100, 'K', 1]

B
###Magneto-transport and Berry phase in magnetically doped Bi$_{0.97-x}$Sb$_{0.03}$ single crystals|V. K. Maurya,Manju Mishra Patidar,Anita Dhaka,R. Rawat,V. Ganesan,R. S. Dhaka###
(1662713, 1662713)
 More importantly, the analysis with the help of LL fandiagram reveals the non-zero Berry phase phirm B -(1pm0.1)pi,which demonstrates the non-trivial topological states near the Dirac point inthe parent and Ni doped samples.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[426.0, 0, ',', 8],[331.0, 80, 'meV', 6],[328.0, 15, 'Tesla', 6],[321.0, 0, 'sample', 6],[298.0, 15, 'Tesla', 5],[43.0, 100, 'K', 1]

Ni
###Magneto-transport and Berry phase in magnetically doped Bi$_{0.97-x}$Sb$_{0.03}$ single crystals|V. K. Maurya,Manju Mishra Patidar,Anita Dhaka,R. Rawat,V. Ganesan,R. S. Dhaka###
(1662756, 1662756)
 More importantly, the analysis with the help of LL fandiagram reveals the non-zero Berry phase phirm B -(1pm0.1)pi,which demonstrates the non-trivial topological states near the Dirac point inthe parent and Ni doped samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[469.0, 0, ',', 8],[374.0, 80, 'meV', 6],[371.0, 15, 'Tesla', 6],[364.0, 0, 'sample', 6],[341.0, 15, 'Tesla', 5],[86.0, 100, 'K', 1]

S
###Enhanced all-optical switching and domain wall velocity in annealed synthetic-ferrimagnetic multilayers|Luding Wang,Youri L. W. van Hees,Reinoud Lavrijsen,Weisheng Zhao,Bert Koopmans###
(1662807, 1662807)
 All optical switching (AOS) of the magnetization in synthetic ferrimagneticPt/Co/Gd stacks has received considerable interest due to its high potentialtowards integration with spintronic devices, such as magnetic tunnel junctions(MTJs), to enable ultrafast memory applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[307.0, 100, 'C', 4],[310.0, 300, 'C', 4],[318.0, 28, '%', 5],[340.0, 300, 'C', 5]

Pt/Co/Gd
###Enhanced all-optical switching and domain wall velocity in annealed synthetic-ferrimagnetic multilayers|Luding Wang,Youri L. W. van Hees,Reinoud Lavrijsen,Weisheng Zhao,Bert Koopmans###
(1662823, 1662827)
 All optical switching (AOS) of the magnetization in synthetic ferrimagneticPt/Co/Gd stacks has received considerable interest due to its high potentialtowards integration with spintronic devices, such as magnetic tunnel junctions(MTJs), to enable ultrafast memory applications.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[287.0, 100, 'C', 4],[290.0, 300, 'C', 4],[298.0, 28, '%', 5],[320.0, 300, 'C', 5]

OS
###Enhanced all-optical switching and domain wall velocity in annealed synthetic-ferrimagnetic multilayers|Luding Wang,Youri L. W. van Hees,Reinoud Lavrijsen,Weisheng Zhao,Bert Koopmans###
(1662941, 1662942)
 However, with integrating AOS with an MTJ in prospect, theannealing effects on single-pulse AOS and domain wall (D<missing VAR>W) dynamics in thePt/Co/Gd stacks havent<missing VAR> been systematically investigated yet.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[172.0, 100, 'C', 2],[175.0, 300, 'C', 2],[183.0, 28, '%', 3],[205.0, 300, 'C', 3]

OS
###Enhanced all-optical switching and domain wall velocity in annealed synthetic-ferrimagnetic multilayers|Luding Wang,Youri L. W. van Hees,Reinoud Lavrijsen,Weisheng Zhao,Bert Koopmans###
(1662971, 1662972)
 However, with integrating AOS with an MTJ in prospect, theannealing effects on single-pulse AOS and domain wall (D<missing VAR>W) dynamics in thePt/Co/Gd stacks havent<missing VAR> been systematically investigated yet.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 100, 'C', 2],[145.0, 300, 'C', 2],[153.0, 28, '%', 3],[175.0, 300, 'C', 3]

W
###Enhanced all-optical switching and domain wall velocity in annealed synthetic-ferrimagnetic multilayers|Luding Wang,Youri L. W. van Hees,Reinoud Lavrijsen,Weisheng Zhao,Bert Koopmans###
(1662982, 1662982)
 However, with integrating AOS with an MTJ in prospect, theannealing effects on single-pulse AOS and domain wall (D<missing VAR>W) dynamics in thePt/Co/Gd stacks havent<missing VAR> been systematically investigated yet.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 100, 'C', 2],[135.0, 300, 'C', 2],[143.0, 28, '%', 3],[165.0, 300, 'C', 3]

Pt/Co/Gd
###Enhanced all-optical switching and domain wall velocity in annealed synthetic-ferrimagnetic multilayers|Luding Wang,Youri L. W. van Hees,Reinoud Lavrijsen,Weisheng Zhao,Bert Koopmans###
(1662992, 1662996)
 However, with integrating AOS with an MTJ in prospect, theannealing effects on single-pulse AOS and domain wall (D<missing VAR>W) dynamics in thePt/Co/Gd stacks havent<missing VAR> been systematically investigated yet.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[118.0, 100, 'C', 2],[121.0, 300, 'C', 2],[129.0, 28, '%', 3],[151.0, 300, 'C', 3]

In
###Enhanced all-optical switching and domain wall velocity in annealed synthetic-ferrimagnetic multilayers|Luding Wang,Youri L. W. van Hees,Reinoud Lavrijsen,Weisheng Zhao,Bert Koopmans###
(1663012, 1663012)
 In this study, weexperimentally explore the annealing effect on AOS and field-induced D<missing VAR>W motionin Pt/Co/Gd stacks.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 100, 'C', 1],[105.0, 300, 'C', 1],[113.0, 28, '%', 2],[135.0, 300, 'C', 2]

OS
###Enhanced all-optical switching and domain wall velocity in annealed synthetic-ferrimagnetic multilayers|Luding Wang,Youri L. W. van Hees,Reinoud Lavrijsen,Weisheng Zhao,Bert Koopmans###
(1663035, 1663036)
 In this study, weexperimentally explore the annealing effect on AOS and field-induced D<missing VAR>W motionin Pt/Co/Gd stacks.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 100, 'C', 1],[81.0, 300, 'C', 1],[89.0, 28, '%', 2],[111.0, 300, 'C', 2]

W
###Enhanced all-optical switching and domain wall velocity in annealed synthetic-ferrimagnetic multilayers|Luding Wang,Youri L. W. van Hees,Reinoud Lavrijsen,Weisheng Zhao,Bert Koopmans###
(1663045, 1663045)
 In this study, weexperimentally explore the annealing effect on AOS and field-induced D<missing VAR>W motionin Pt/Co/Gd stacks.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 100, 'C', 1],[72.0, 300, 'C', 1],[80.0, 28, '%', 2],[102.0, 300, 'C', 2]

Pt/Co/Gd
###Enhanced all-optical switching and domain wall velocity in annealed synthetic-ferrimagnetic multilayers|Luding Wang,Youri L. W. van Hees,Reinoud Lavrijsen,Weisheng Zhao,Bert Koopmans###
(1663052, 1663056)
 In this study, weexperimentally explore the annealing effect on AOS and field-induced D<missing VAR>W motionin Pt/Co/Gd stacks.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[58.0, 100, 'C', 1],[61.0, 300, 'C', 1],[69.0, 28, '%', 2],[91.0, 300, 'C', 2]

(F0)
###Enhanced all-optical switching and domain wall velocity in annealed synthetic-ferrimagnetic multilayers|Luding Wang,Youri L. W. van Hees,Reinoud Lavrijsen,Weisheng Zhao,Bert Koopmans###
(1663075, 1663078)
 The results show that the threshold fluence (F0) for AOSis reduced significantly as a function of annealing temperature (T<missing VAR>a) rangingfrom 100C to 300C.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 100, 'C', 0],[39.0, 300, 'C', 0],[47.0, 28, '%', 1],[69.0, 300, 'C', 1]

OS
###Enhanced all-optical switching and domain wall velocity in annealed synthetic-ferrimagnetic multilayers|Luding Wang,Youri L. W. van Hees,Reinoud Lavrijsen,Weisheng Zhao,Bert Koopmans###
(1663083, 1663084)
 The results show that the threshold fluence (F0) for AOSis reduced significantly as a function of annealing temperature (T<missing VAR>a) rangingfrom 100C to 300C.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 100, 'C', 0],[33.0, 300, 'C', 0],[41.0, 28, '%', 1],[63.0, 300, 'C', 1]

F0
###Enhanced all-optical switching and domain wall velocity in annealed synthetic-ferrimagnetic multilayers|Luding Wang,Youri L. W. van Hees,Reinoud Lavrijsen,Weisheng Zhao,Bert Koopmans###
(1663132, 1663133)
 Specifically, a 28% reduction of F0 can be observed uponannealing at 300C, which is a critical T<missing VAR>a for MTJ fabrication.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 100, 'C', 1],[15.0, 300, 'C', 1],[7.0, 28, '%', 0],[14.0, 300, 'C', 0]

W
###Enhanced all-optical switching and domain wall velocity in annealed synthetic-ferrimagnetic multilayers|Luding Wang,Youri L. W. van Hees,Reinoud Lavrijsen,Weisheng Zhao,Bert Koopmans###
(1663191, 1663191)
 Lastly, we alsodemonstrate a significant increase of the D<missing VAR>W velocity in the creep regime uponannealing, which is attributed to annealing-induced Co/Gd interfaceintermixing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 100, 'C', 2],[74.0, 300, 'C', 2],[66.0, 28, '%', 1],[44.0, 300, 'C', 1]

Co/Gd
###Enhanced all-optical switching and domain wall velocity in annealed synthetic-ferrimagnetic multilayers|Luding Wang,Youri L. W. van Hees,Reinoud Lavrijsen,Weisheng Zhao,Bert Koopmans###
(1663221, 1663223)
 Lastly, we alsodemonstrate a significant increase of the D<missing VAR>W velocity in the creep regime uponannealing, which is attributed to annealing-induced Co/Gd interfaceintermixing.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[107.0, 100, 'C', 2],[104.0, 300, 'C', 2],[96.0, 28, '%', 1],[74.0, 300, 'C', 1]

Pt/Co/Gd
###Enhanced all-optical switching and domain wall velocity in annealed synthetic-ferrimagnetic multilayers|Luding Wang,Youri L. W. van Hees,Reinoud Lavrijsen,Weisheng Zhao,Bert Koopmans###
(1663241, 1663245)
 Our findings show that annealed Pt/Co/Gd system facilitatesultrafast and energy-efficient AOS, as well as enhanced D<missing VAR>W velocity, which ishighly suitable towards opto-spintronic memory applications.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[127.0, 100, 'C', 3],[124.0, 300, 'C', 3],[116.0, 28, '%', 2],[94.0, 300, 'C', 2]

OS
###Enhanced all-optical switching and domain wall velocity in annealed synthetic-ferrimagnetic multilayers|Luding Wang,Youri L. W. van Hees,Reinoud Lavrijsen,Weisheng Zhao,Bert Koopmans###
(1663261, 1663262)
 Our findings show that annealed Pt/Co/Gd system facilitatesultrafast and energy-efficient AOS, as well as enhanced D<missing VAR>W velocity, which ishighly suitable towards opto-spintronic memory applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 100, 'C', 3],[144.0, 300, 'C', 3],[136.0, 28, '%', 2],[114.0, 300, 'C', 2]

W
###Enhanced all-optical switching and domain wall velocity in annealed synthetic-ferrimagnetic multilayers|Luding Wang,Youri L. W. van Hees,Reinoud Lavrijsen,Weisheng Zhao,Bert Koopmans###
(1663274, 1663274)
 Our findings show that annealed Pt/Co/Gd system facilitatesultrafast and energy-efficient AOS, as well as enhanced D<missing VAR>W velocity, which ishighly suitable towards opto-spintronic memory applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 100, 'C', 3],[157.0, 300, 'C', 3],[149.0, 28, '%', 2],[127.0, 300, 'C', 2]

In
###Superconductivity in Hydrogenated Graphites|Nadina Gheorghiu,Charles R. Ebbing,Timothy J. Haugan###
(1663722, 1663722)
 In addition,AF spin fluctuations creates pseudo-gap states above 50 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[336.0, 50, 'K', 9],[212.0, 50, 'K', 6],[157.0, 50, 'K', 4],[50.0, 50, 'K', 2],[3.0, 50, 'K', 1],[22.0, 50, 'K', 0]

F
###Superconductivity in Hydrogenated Graphites|Nadina Gheorghiu,Charles R. Ebbing,Timothy J. Haugan###
(1663729, 1663729)
 In addition,AF spin fluctuations creates pseudo-gap states above 50 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[343.0, 50, 'K', 9],[219.0, 50, 'K', 6],[164.0, 50, 'K', 4],[57.0, 50, 'K', 2],[10.0, 50, 'K', 1],[15.0, 50, 'K', 0]

CrSBr
###Layered Antiferromagnetism Induces Large Negative Magnetoresistance in the van der Waals Semiconductor CrSBr|Evan J. Telford,Avalon H. Dismukes,Kihong Lee,Minghao Cheng,Andrew Wieteska,Amymarie K. Bartholomew,Yu-Sheng Chen,Xiaodong Xu,Abhay N. Pasupathy,Xiaoyang Zhu,Cory R. Dean,Xavier Roy###
(1663779, 1663781)
Layered Antiferromagnetism Induces Large Negative Magnetoresistance in the van der Waals Semiconductor CrSBr.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Layered Antiferromagnetism Induces Large Negative Magnetoresistance in the van der Waals Semiconductor CrSBr|Evan J. Telford,Avalon H. Dismukes,Kihong Lee,Minghao Cheng,Andrew Wieteska,Amymarie K. Bartholomew,Yu-Sheng Chen,Xiaodong Xu,Abhay N. Pasupathy,Xiaoyang Zhu,Cory R. Dean,Xavier Roy###
(1663813, 1663813)
 The recent discovery of magnetism within the family of exfoliatable van derWaals (vdW) compounds has attracted considerable interest in these materialsfor both fundamental research and technological applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Layered Antiferromagnetism Induces Large Negative Magnetoresistance in the van der Waals Semiconductor CrSBr|Evan J. Telford,Avalon H. Dismukes,Kihong Lee,Minghao Cheng,Andrew Wieteska,Amymarie K. Bartholomew,Yu-Sheng Chen,Xiaodong Xu,Abhay N. Pasupathy,Xiaoyang Zhu,Cory R. Dean,Xavier Roy###
(1663854, 1663854)
 However currentvdW magnets are limited by their extreme sensitivity to air, low orderingtemperatures, and poor charge transport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CrSBr
###Layered Antiferromagnetism Induces Large Negative Magnetoresistance in the van der Waals Semiconductor CrSBr|Evan J. Telford,Avalon H. Dismukes,Kihong Lee,Minghao Cheng,Andrew Wieteska,Amymarie K. Bartholomew,Yu-Sheng Chen,Xiaodong Xu,Abhay N. Pasupathy,Xiaoyang Zhu,Cory R. Dean,Xavier Roy###
(1663913, 1663915)
 Here we report the magneticand electronic properties of CrSBr, an air-stable vdW antiferromagneticsemiconductor that readily cleaves perpendicular to the stacking axis.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Layered Antiferromagnetism Induces Large Negative Magnetoresistance in the van der Waals Semiconductor CrSBr|Evan J. Telford,Avalon H. Dismukes,Kihong Lee,Minghao Cheng,Andrew Wieteska,Amymarie K. Bartholomew,Yu-Sheng Chen,Xiaodong Xu,Abhay N. Pasupathy,Xiaoyang Zhu,Cory R. Dean,Xavier Roy###
(1663925, 1663925)
 Here we report the magneticand electronic properties of CrSBr, an air-stable vdW antiferromagneticsemiconductor that readily cleaves perpendicular to the stacking axis.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Layered Antiferromagnetism Induces Large Negative Magnetoresistance in the van der Waals Semiconductor CrSBr|Evan J. Telford,Avalon H. Dismukes,Kihong Lee,Minghao Cheng,Andrew Wieteska,Amymarie K. Bartholomew,Yu-Sheng Chen,Xiaodong Xu,Abhay N. Pasupathy,Xiaoyang Zhu,Cory R. Dean,Xavier Roy###
(1663954, 1663954)
 Belowits Ne<missing VAR>el temperature, T<missing VAR>N  132 pm 1 K, CrSBr adopts an A-typeantiferromagnetic structure with each individual layer ferromagneticallyordered internally and the layers coupled antiferromagnetically along thestacking direction.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Layered Antiferromagnetism Induces Large Negative Magnetoresistance in the van der Waals Semiconductor CrSBr|Evan J. Telford,Avalon H. Dismukes,Kihong Lee,Minghao Cheng,Andrew Wieteska,Amymarie K. Bartholomew,Yu-Sheng Chen,Xiaodong Xu,Abhay N. Pasupathy,Xiaoyang Zhu,Cory R. Dean,Xavier Roy###
(1663962, 1663962)
 Belowits Ne<missing VAR>el temperature, T<missing VAR>N  132 pm 1 K, CrSBr adopts an A-typeantiferromagnetic structure with each individual layer ferromagneticallyordered internally and the layers coupled antiferromagnetically along thestacking direction.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Layered Antiferromagnetism Induces Large Negative Magnetoresistance in the van der Waals Semiconductor CrSBr|Evan J. Telford,Avalon H. Dismukes,Kihong Lee,Minghao Cheng,Andrew Wieteska,Amymarie K. Bartholomew,Yu-Sheng Chen,Xiaodong Xu,Abhay N. Pasupathy,Xiaoyang Zhu,Cory R. Dean,Xavier Roy###
(1663971, 1663971)
 Belowits Ne<missing VAR>el temperature, T<missing VAR>N  132 pm 1 K, CrSBr adopts an A-typeantiferromagnetic structure with each individual layer ferromagneticallyordered internally and the layers coupled antiferromagnetically along thestacking direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CrSBr
###Layered Antiferromagnetism Induces Large Negative Magnetoresistance in the van der Waals Semiconductor CrSBr|Evan J. Telford,Avalon H. Dismukes,Kihong Lee,Minghao Cheng,Andrew Wieteska,Amymarie K. Bartholomew,Yu-Sheng Chen,Xiaodong Xu,Abhay N. Pasupathy,Xiaoyang Zhu,Cory R. Dean,Xavier Roy###
(1663974, 1663976)
 Belowits Ne<missing VAR>el temperature, T<missing VAR>N  132 pm 1 K, CrSBr adopts an A-typeantiferromagnetic structure with each individual layer ferromagneticallyordered internally and the layers coupled antiferromagnetically along thestacking direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Layered Antiferromagnetism Induces Large Negative Magnetoresistance in the van der Waals Semiconductor CrSBr|Evan J. Telford,Avalon H. Dismukes,Kihong Lee,Minghao Cheng,Andrew Wieteska,Amymarie K. Bartholomew,Yu-Sheng Chen,Xiaodong Xu,Abhay N. Pasupathy,Xiaoyang Zhu,Cory R. Dean,Xavier Roy###
(1664037, 1664037)
 Scanning tunneling spectroscopy and photoluminescence (PL)reveal that the electronic gap is DeltaE<missing VAR>  1.5 pm 0.2 e<missing VAR>V with acorresponding PL<missing VAR> peak centered at 1.25 pm 0.07 e<missing VAR>V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Layered Antiferromagnetism Induces Large Negative Magnetoresistance in the van der Waals Semiconductor CrSBr|Evan J. Telford,Avalon H. Dismukes,Kihong Lee,Minghao Cheng,Andrew Wieteska,Amymarie K. Bartholomew,Yu-Sheng Chen,Xiaodong Xu,Abhay N. Pasupathy,Xiaoyang Zhu,Cory R. Dean,Xavier Roy###
(1664065, 1664065)
 Scanning tunneling spectroscopy and photoluminescence (PL)reveal that the electronic gap is DeltaE<missing VAR>  1.5 pm 0.2 e<missing VAR>V with acorresponding PL<missing VAR> peak centered at 1.25 pm 0.07 e<missing VAR>V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Layered Antiferromagnetism Induces Large Negative Magnetoresistance in the van der Waals Semiconductor CrSBr|Evan J. Telford,Avalon H. Dismukes,Kihong Lee,Minghao Cheng,Andrew Wieteska,Amymarie K. Bartholomew,Yu-Sheng Chen,Xiaodong Xu,Abhay N. Pasupathy,Xiaoyang Zhu,Cory R. Dean,Xavier Roy###
(1664074, 1664074)
 Scanning tunneling spectroscopy and photoluminescence (PL)reveal that the electronic gap is DeltaE<missing VAR>  1.5 pm 0.2 e<missing VAR>V with acorresponding PL<missing VAR> peak centered at 1.25 pm 0.07 e<missing VAR>V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Layered Antiferromagnetism Induces Large Negative Magnetoresistance in the van der Waals Semiconductor CrSBr|Evan J. Telford,Avalon H. Dismukes,Kihong Lee,Minghao Cheng,Andrew Wieteska,Amymarie K. Bartholomew,Yu-Sheng Chen,Xiaodong Xu,Abhay N. Pasupathy,Xiaoyang Zhu,Cory R. Dean,Xavier Roy###
(1664090, 1664090)
 Scanning tunneling spectroscopy and photoluminescence (PL)reveal that the electronic gap is DeltaE<missing VAR>  1.5 pm 0.2 e<missing VAR>V with acorresponding PL<missing VAR> peak centered at 1.25 pm 0.07 e<missing VAR>V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CrSBr
###Layered Antiferromagnetism Induces Large Negative Magnetoresistance in the van der Waals Semiconductor CrSBr|Evan J. Telford,Avalon H. Dismukes,Kihong Lee,Minghao Cheng,Andrew Wieteska,Amymarie K. Bartholomew,Yu-Sheng Chen,Xiaodong Xu,Abhay N. Pasupathy,Xiaoyang Zhu,Cory R. Dean,Xavier Roy###
(1664124, 1664126)
 Using magnetotransportmeasurements, we demonstrate strong coupling between magnetic order andtransport properties in CrSBr, leading to a large negative magnetoresistanceresponse that is unique amongst vdW materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Layered Antiferromagnetism Induces Large Negative Magnetoresistance in the van der Waals Semiconductor CrSBr|Evan J. Telford,Avalon H. Dismukes,Kihong Lee,Minghao Cheng,Andrew Wieteska,Amymarie K. Bartholomew,Yu-Sheng Chen,Xiaodong Xu,Abhay N. Pasupathy,Xiaoyang Zhu,Cory R. Dean,Xavier Roy###
(1664153, 1664153)
 Using magnetotransportmeasurements, we demonstrate strong coupling between magnetic order andtransport properties in CrSBr, leading to a large negative magnetoresistanceresponse that is unique amongst vdW materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CrSBr
###Layered Antiferromagnetism Induces Large Negative Magnetoresistance in the van der Waals Semiconductor CrSBr|Evan J. Telford,Avalon H. Dismukes,Kihong Lee,Minghao Cheng,Andrew Wieteska,Amymarie K. Bartholomew,Yu-Sheng Chen,Xiaodong Xu,Abhay N. Pasupathy,Xiaoyang Zhu,Cory R. Dean,Xavier Roy###
(1664164, 1664166)
 These findings establish CrSBras a promising material platform for increasing the applicability of vdWmagnets to the field of spin-based electronics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Layered Antiferromagnetism Induces Large Negative Magnetoresistance in the van der Waals Semiconductor CrSBr|Evan J. Telford,Avalon H. Dismukes,Kihong Lee,Minghao Cheng,Andrew Wieteska,Amymarie K. Bartholomew,Yu-Sheng Chen,Xiaodong Xu,Abhay N. Pasupathy,Xiaoyang Zhu,Cory R. Dean,Xavier Roy###
(1664190, 1664190)
 These findings establish CrSBras a promising material platform for increasing the applicability of vdWmagnets to the field of spin-based electronics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ca1-xSr
###Glassy dielectric anomaly and negative magneto-capacitance effect in electron-doped Ca$_{1-x}$Sr$_x$Mn$_{0.85}$Sb$_{0.15}$O$_3$|Haruka Taniguchi,Hidenori Takahashi,Akihiro Terui,Kensuke Sadamitsu,Yuka Sato,Michihiro Ito,Katsuhiko Nonaka,Satoru Kobayashi,Michiaki Matsukawa,Ramanathan Suryanarayanan,Nae Sasaki,Shunpei Yamaguchi,Takao Watanabe###
(1664240, 1664244)
Glassy dielectric anomaly and negative magneto-capacitance effect in electron-doped Ca1-xSrx<missing VAR>Mn0.85Sb0.15O3.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[91.0, 0, ',', 2],[94.0, 0.1, ',', 2],[97.0, 0.2, ',', 2],[219.0, 50, 'K', 4]

Mn0.85Sb0.15O3
###Glassy dielectric anomaly and negative magneto-capacitance effect in electron-doped Ca$_{1-x}$Sr$_x$Mn$_{0.85}$Sb$_{0.15}$O$_3$|Haruka Taniguchi,Hidenori Takahashi,Akihiro Terui,Kensuke Sadamitsu,Yuka Sato,Michihiro Ito,Katsuhiko Nonaka,Satoru Kobayashi,Michiaki Matsukawa,Ramanathan Suryanarayanan,Nae Sasaki,Shunpei Yamaguchi,Takao Watanabe###
(1664246, 1664251)
Glassy dielectric anomaly and negative magneto-capacitance effect in electron-doped Ca1-xSrx<missing VAR>Mn0.85Sb0.15O3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.0375,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 0, ',', 2],[87.0, 0.1, ',', 2],[90.0, 0.2, ',', 2],[212.0, 50, 'K', 4]

Ca1-xSr
###Glassy dielectric anomaly and negative magneto-capacitance effect in electron-doped Ca$_{1-x}$Sr$_x$Mn$_{0.85}$Sb$_{0.15}$O$_3$|Haruka Taniguchi,Hidenori Takahashi,Akihiro Terui,Kensuke Sadamitsu,Yuka Sato,Michihiro Ito,Katsuhiko Nonaka,Satoru Kobayashi,Michiaki Matsukawa,Ramanathan Suryanarayanan,Nae Sasaki,Shunpei Yamaguchi,Takao Watanabe###
(1664318, 1664322)
 Herein, wereport the dielectric and magnetic properties of electron-doped manganiteCa1-xSrx<missing VAR>Mn0.85Sb0.15O3 (x<missing VAR>  0, 0.1, 0.2, and 0.3).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[13.0, 0, ',', 0],[16.0, 0.1, ',', 0],[19.0, 0.2, ',', 0],[141.0, 50, 'K', 2]

Mn0.85Sb0.15O3
###Glassy dielectric anomaly and negative magneto-capacitance effect in electron-doped Ca$_{1-x}$Sr$_x$Mn$_{0.85}$Sb$_{0.15}$O$_3$|Haruka Taniguchi,Hidenori Takahashi,Akihiro Terui,Kensuke Sadamitsu,Yuka Sato,Michihiro Ito,Katsuhiko Nonaka,Satoru Kobayashi,Michiaki Matsukawa,Ramanathan Suryanarayanan,Nae Sasaki,Shunpei Yamaguchi,Takao Watanabe###
(1664324, 1664329)
 Herein, wereport the dielectric and magnetic properties of electron-doped manganiteCa1-xSrx<missing VAR>Mn0.85Sb0.15O3 (x<missing VAR>  0, 0.1, 0.2, and 0.3).
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.0375,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 0, ',', 0],[9.0, 0.1, ',', 0],[12.0, 0.2, ',', 0],[134.0, 50, 'K', 2]

Sr
###Glassy dielectric anomaly and negative magneto-capacitance effect in electron-doped Ca$_{1-x}$Sr$_x$Mn$_{0.85}$Sb$_{0.15}$O$_3$|Haruka Taniguchi,Hidenori Takahashi,Akihiro Terui,Kensuke Sadamitsu,Yuka Sato,Michihiro Ito,Katsuhiko Nonaka,Satoru Kobayashi,Michiaki Matsukawa,Ramanathan Suryanarayanan,Nae Sasaki,Shunpei Yamaguchi,Takao Watanabe###
(1664439, 1664439)
 Furthermore, isovalent Sr substitution enhances the temperatureof the dielectric peak by more than 50 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 0, ',', 2],[101.0, 0.1, ',', 2],[98.0, 0.2, ',', 2],[24.0, 50, 'K', 0]

W
###Glassy dielectric anomaly and negative magneto-capacitance effect in electron-doped Ca$_{1-x}$Sr$_x$Mn$_{0.85}$Sb$_{0.15}$O$_3$|Haruka Taniguchi,Hidenori Takahashi,Akihiro Terui,Kensuke Sadamitsu,Yuka Sato,Michihiro Ito,Katsuhiko Nonaka,Satoru Kobayashi,Michiaki Matsukawa,Ramanathan Suryanarayanan,Nae Sasaki,Shunpei Yamaguchi,Takao Watanabe###
(1664536, 1664536)
 For all measured samples, thelow-temperature variation of the dielectric constant can be qualitativelyexplained based on the Maxwell-Wagner (M<missing VAR>W) model that describes a systemcomposed of grain boundaries and semiconducting grains.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[201.0, 0, ',', 4],[198.0, 0.1, ',', 4],[195.0, 0.2, ',', 4],[73.0, 50, 'K', 2]

W
###Glassy dielectric anomaly and negative magneto-capacitance effect in electron-doped Ca$_{1-x}$Sr$_x$Mn$_{0.85}$Sb$_{0.15}$O$_3$|Haruka Taniguchi,Hidenori Takahashi,Akihiro Terui,Kensuke Sadamitsu,Yuka Sato,Michihiro Ito,Katsuhiko Nonaka,Satoru Kobayashi,Michiaki Matsukawa,Ramanathan Suryanarayanan,Nae Sasaki,Shunpei Yamaguchi,Takao Watanabe###
(1664611, 1664611)
 However, the observedpeak and its negative magneto-capacitance effect at high temperatures cannot bereproduced by a combination of the M<missing VAR>W model and magnetoresistance effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[276.0, 0, ',', 5],[273.0, 0.1, ',', 5],[270.0, 0.2, ',', 5],[148.0, 50, 'K', 3]

P
###Applying configurational complexity to the 2D Ruddlesden-Popper crystal structure|Wenrui Zhang,Alessandro R. Mazza,Elizabeth Skoropata,Debangshu Mukherjee,Brianna L. Musico,Jie Zhang,Veerle Keppens,Lihua Zhang,Kim Kisslinger,Eli Stavitski,Mathew Brahlek,John W. Freeland,Ping Lu,Thomas Z. Ward###
(1664791, 1664791)
 Here we establish extraordinaryconfigurational disorder in a two dimensional layered Ruddlesden-Popper (R<missing VAR>P)structure using entropy stabilization assisted synthesis.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 2, 'D', 2],[61.0, 2, 'D', 1],[364.0, 2, 'D', 5],[373.0, 3, 'D', 5]

CuO4
###Applying configurational complexity to the 2D Ruddlesden-Popper crystal structure|Wenrui Zhang,Alessandro R. Mazza,Elizabeth Skoropata,Debangshu Mukherjee,Brianna L. Musico,Jie Zhang,Veerle Keppens,Lihua Zhang,Kim Kisslinger,Eli Stavitski,Mathew Brahlek,John W. Freeland,Ping Lu,Thomas Z. Ward###
(1664814, 1664816)
 A protype A2CuO4 R<missing VAR>Pcuprate oxide with five components (La, Pr, Nd, Sm, Eu) on the A-sitesublattice is designed and fabricated into epitaxial single crystal films usingpulsed laser deposition.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 2, 'D', 3],[84.0, 2, 'D', 2],[339.0, 2, 'D', 4],[348.0, 3, 'D', 4]

P
###Applying configurational complexity to the 2D Ruddlesden-Popper crystal structure|Wenrui Zhang,Alessandro R. Mazza,Elizabeth Skoropata,Debangshu Mukherjee,Brianna L. Musico,Jie Zhang,Veerle Keppens,Lihua Zhang,Kim Kisslinger,Eli Stavitski,Mathew Brahlek,John W. Freeland,Ping Lu,Thomas Z. Ward###
(1664819, 1664819)
 A protype A2CuO4 R<missing VAR>Pcuprate oxide with five components (La, Pr, Nd, Sm, Eu) on the A-sitesublattice is designed and fabricated into epitaxial single crystal films usingpulsed laser deposition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 2, 'D', 3],[89.0, 2, 'D', 2],[336.0, 2, 'D', 4],[345.0, 3, 'D', 4]

La
###Applying configurational complexity to the 2D Ruddlesden-Popper crystal structure|Wenrui Zhang,Alessandro R. Mazza,Elizabeth Skoropata,Debangshu Mukherjee,Brianna L. Musico,Jie Zhang,Veerle Keppens,Lihua Zhang,Kim Kisslinger,Eli Stavitski,Mathew Brahlek,John W. Freeland,Ping Lu,Thomas Z. Ward###
(1664833, 1664833)
 A protype A2CuO4 R<missing VAR>Pcuprate oxide with five components (La, Pr, Nd, Sm, Eu) on the A-sitesublattice is designed and fabricated into epitaxial single crystal films usingpulsed laser deposition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 2, 'D', 3],[103.0, 2, 'D', 2],[322.0, 2, 'D', 4],[331.0, 3, 'D', 4]

Pr
###Applying configurational complexity to the 2D Ruddlesden-Popper crystal structure|Wenrui Zhang,Alessandro R. Mazza,Elizabeth Skoropata,Debangshu Mukherjee,Brianna L. Musico,Jie Zhang,Veerle Keppens,Lihua Zhang,Kim Kisslinger,Eli Stavitski,Mathew Brahlek,John W. Freeland,Ping Lu,Thomas Z. Ward###
(1664836, 1664836)
 A protype A2CuO4 R<missing VAR>Pcuprate oxide with five components (La, Pr, Nd, Sm, Eu) on the A-sitesublattice is designed and fabricated into epitaxial single crystal films usingpulsed laser deposition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 2, 'D', 3],[106.0, 2, 'D', 2],[319.0, 2, 'D', 4],[328.0, 3, 'D', 4]

Nd
###Applying configurational complexity to the 2D Ruddlesden-Popper crystal structure|Wenrui Zhang,Alessandro R. Mazza,Elizabeth Skoropata,Debangshu Mukherjee,Brianna L. Musico,Jie Zhang,Veerle Keppens,Lihua Zhang,Kim Kisslinger,Eli Stavitski,Mathew Brahlek,John W. Freeland,Ping Lu,Thomas Z. Ward###
(1664839, 1664839)
 A protype A2CuO4 R<missing VAR>Pcuprate oxide with five components (La, Pr, Nd, Sm, Eu) on the A-sitesublattice is designed and fabricated into epitaxial single crystal films usingpulsed laser deposition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 2, 'D', 3],[109.0, 2, 'D', 2],[316.0, 2, 'D', 4],[325.0, 3, 'D', 4]

Sm
###Applying configurational complexity to the 2D Ruddlesden-Popper crystal structure|Wenrui Zhang,Alessandro R. Mazza,Elizabeth Skoropata,Debangshu Mukherjee,Brianna L. Musico,Jie Zhang,Veerle Keppens,Lihua Zhang,Kim Kisslinger,Eli Stavitski,Mathew Brahlek,John W. Freeland,Ping Lu,Thomas Z. Ward###
(1664842, 1664842)
 A protype A2CuO4 R<missing VAR>Pcuprate oxide with five components (La, Pr, Nd, Sm, Eu) on the A-sitesublattice is designed and fabricated into epitaxial single crystal films usingpulsed laser deposition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 2, 'D', 3],[112.0, 2, 'D', 2],[313.0, 2, 'D', 4],[322.0, 3, 'D', 4]

Eu
###Applying configurational complexity to the 2D Ruddlesden-Popper crystal structure|Wenrui Zhang,Alessandro R. Mazza,Elizabeth Skoropata,Debangshu Mukherjee,Brianna L. Musico,Jie Zhang,Veerle Keppens,Lihua Zhang,Kim Kisslinger,Eli Stavitski,Mathew Brahlek,John W. Freeland,Ping Lu,Thomas Z. Ward###
(1664845, 1664845)
 A protype A2CuO4 R<missing VAR>Pcuprate oxide with five components (La, Pr, Nd, Sm, Eu) on the A-sitesublattice is designed and fabricated into epitaxial single crystal films usingpulsed laser deposition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 2, 'D', 3],[115.0, 2, 'D', 2],[310.0, 2, 'D', 4],[319.0, 3, 'D', 4]

(La0.2Pr0.2Nd0.2Sm0.2Eu0.2)2CuO4
###Applying configurational complexity to the 2D Ruddlesden-Popper crystal structure|Wenrui Zhang,Alessandro R. Mazza,Elizabeth Skoropata,Debangshu Mukherjee,Brianna L. Musico,Jie Zhang,Veerle Keppens,Lihua Zhang,Kim Kisslinger,Eli Stavitski,Mathew Brahlek,John W. Freeland,Ping Lu,Thomas Z. Ward###
(1664891, 1664906)
 By comparing (La0.2Pr0.2Nd0.2Sm0.2Eu0.2)2CuO4 crystalsgrown under identical conditions but different substrates, it is found thatheteroepitaxial strain plays an important role in crystal phase formation.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.05714285714285715,0,0.05714285714285715,0.05714285714285715,0,0.05714285714285715,0.05714285714285715,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 2, 'D', 4],[161.0, 2, 'D', 3],[249.0, 2, 'D', 3],[258.0, 3, 'D', 3]

P
###Applying configurational complexity to the 2D Ruddlesden-Popper crystal structure|Wenrui Zhang,Alessandro R. Mazza,Elizabeth Skoropata,Debangshu Mukherjee,Brianna L. Musico,Jie Zhang,Veerle Keppens,Lihua Zhang,Kim Kisslinger,Eli Stavitski,Mathew Brahlek,John W. Freeland,Ping Lu,Thomas Z. Ward###
(1664994, 1664994)
 Whengrown on a near lattice matched substrate, the high entropy oxide film featuresa T<missing VAR>-type R<missing VAR>P structure with uniform A-site cation mixing and square-planar CuO4units, however, growing under strong compressive strain results in a singlecrystal non-R<missing VAR>P cubic phase consistent with a CuX<missing VAR>2O4 spinel structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[276.0, 2, 'D', 5],[264.0, 2, 'D', 4],[161.0, 2, 'D', 2],[170.0, 3, 'D', 2]

CuO4
###Applying configurational complexity to the 2D Ruddlesden-Popper crystal structure|Wenrui Zhang,Alessandro R. Mazza,Elizabeth Skoropata,Debangshu Mukherjee,Brianna L. Musico,Jie Zhang,Veerle Keppens,Lihua Zhang,Kim Kisslinger,Eli Stavitski,Mathew Brahlek,John W. Freeland,Ping Lu,Thomas Z. Ward###
(1665016, 1665018)
 Whengrown on a near lattice matched substrate, the high entropy oxide film featuresa T<missing VAR>-type R<missing VAR>P structure with uniform A-site cation mixing and square-planar CuO4units, however, growing under strong compressive strain results in a singlecrystal non-R<missing VAR>P cubic phase consistent with a CuX<missing VAR>2O4 spinel structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[298.0, 2, 'D', 5],[286.0, 2, 'D', 4],[137.0, 2, 'D', 2],[146.0, 3, 'D', 2]

P
###Applying configurational complexity to the 2D Ruddlesden-Popper crystal structure|Wenrui Zhang,Alessandro R. Mazza,Elizabeth Skoropata,Debangshu Mukherjee,Brianna L. Musico,Jie Zhang,Veerle Keppens,Lihua Zhang,Kim Kisslinger,Eli Stavitski,Mathew Brahlek,John W. Freeland,Ping Lu,Thomas Z. Ward###
(1665051, 1665051)
 Whengrown on a near lattice matched substrate, the high entropy oxide film featuresa T<missing VAR>-type R<missing VAR>P structure with uniform A-site cation mixing and square-planar CuO4units, however, growing under strong compressive strain results in a singlecrystal non-R<missing VAR>P cubic phase consistent with a CuX<missing VAR>2O4 spinel structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[333.0, 2, 'D', 5],[321.0, 2, 'D', 4],[104.0, 2, 'D', 2],[113.0, 3, 'D', 2]

Cu
###Applying configurational complexity to the 2D Ruddlesden-Popper crystal structure|Wenrui Zhang,Alessandro R. Mazza,Elizabeth Skoropata,Debangshu Mukherjee,Brianna L. Musico,Jie Zhang,Veerle Keppens,Lihua Zhang,Kim Kisslinger,Eli Stavitski,Mathew Brahlek,John W. Freeland,Ping Lu,Thomas Z. Ward###
(1665063, 1665063)
 Whengrown on a near lattice matched substrate, the high entropy oxide film featuresa T<missing VAR>-type R<missing VAR>P structure with uniform A-site cation mixing and square-planar CuO4units, however, growing under strong compressive strain results in a singlecrystal non-R<missing VAR>P cubic phase consistent with a CuX<missing VAR>2O4 spinel structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[345.0, 2, 'D', 5],[333.0, 2, 'D', 4],[92.0, 2, 'D', 2],[101.0, 3, 'D', 2]

O4
###Applying configurational complexity to the 2D Ruddlesden-Popper crystal structure|Wenrui Zhang,Alessandro R. Mazza,Elizabeth Skoropata,Debangshu Mukherjee,Brianna L. Musico,Jie Zhang,Veerle Keppens,Lihua Zhang,Kim Kisslinger,Eli Stavitski,Mathew Brahlek,John W. Freeland,Ping Lu,Thomas Z. Ward###
(1665066, 1665067)
 Whengrown on a near lattice matched substrate, the high entropy oxide film featuresa T<missing VAR>-type R<missing VAR>P structure with uniform A-site cation mixing and square-planar CuO4units, however, growing under strong compressive strain results in a singlecrystal non-R<missing VAR>P cubic phase consistent with a CuX<missing VAR>2O4 spinel structure.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[348.0, 2, 'D', 5],[336.0, 2, 'D', 4],[88.0, 2, 'D', 2],[97.0, 3, 'D', 2]

P
###Applying configurational complexity to the 2D Ruddlesden-Popper crystal structure|Wenrui Zhang,Alessandro R. Mazza,Elizabeth Skoropata,Debangshu Mukherjee,Brianna L. Musico,Jie Zhang,Veerle Keppens,Lihua Zhang,Kim Kisslinger,Eli Stavitski,Mathew Brahlek,John W. Freeland,Ping Lu,Thomas Z. Ward###
(1665161, 1665161)
 Designing configurational complexity and moving between 2Dlayered R<missing VAR>P and 3D cubic crystal structures in this class of cuprate materialsopens many opportunities for new design strategies related tomagnetoresistance, unconventional superconductivity, ferroelectricity,catalysis, and ion transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[443.0, 2, 'D', 7],[431.0, 2, 'D', 6],[6.0, 2, 'D', 0],[3.0, 3, 'D', 0]

Y
###Magnetic order and transport in a spin-fermion model on a superlattice|Sabyasachi Tarat,Jian Li,Richard T. Scalettar,Rubem Mondaini###
(1665376, 1665376)
Using a spiral ansatz for the spins, we study the effect of the electronmediated Ruderman-Kittel-Kasuya-Yosida (R<missing VAR>KKY) interaction on the T<missing VAR>0 groundstate of the system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

KKY
###Magnetic order and transport in a spin-fermion model on a superlattice|Sabyasachi Tarat,Jian Li,Richard T. Scalettar,Rubem Mondaini###
(1665409, 1665411)
 We find that the R<missing VAR>KKY interaction can lead toferromagnetic, antiferromagnetic, or intermediate spiral phases for differentsystem parameters.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

KKY
###Magnetic order and transport in a spin-fermion model on a superlattice|Sabyasachi Tarat,Jian Li,Richard T. Scalettar,Rubem Mondaini###
(1665651, 1665653)
 Our analysis provides arobust framework for understanding the role of the R<missing VAR>KKY interaction on theground state order and corresponding transport properties of such systems,extending beyond the conventional perturbative regime.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TaPdTe5
###Topological Dirac states in a layered telluride TaPdTe$_5$ with quasi-one-dimensional PdTe$_2$ chains|Wen-He Jiao,Xiao-Meng Xie,Yi Liu,Xiaofeng Xu,Bin Li,Chun-Qiang Xu,Ji-Yong Liu,Wei Zhou,Yu-Ke Li,Hai-Yang Yang,Shan Jiang,Yongkang Luo,Zeng-Wei Zhu,Guang-Han Cao###
(1665719, 1665722)
Topological Dirac states in a layered telluride TaPdTe5 with quasi-one-dimensional PdTe2 chains.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0.7142857142857143,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[245.0, 51.7, 'T', 5],[279.0, 2.1, 'K', 6],[365.0, 28.5, 'T', 8]

PdTe2
###Topological Dirac states in a layered telluride TaPdTe$_5$ with quasi-one-dimensional PdTe$_2$ chains|Wen-He Jiao,Xiao-Meng Xie,Yi Liu,Xiaofeng Xu,Bin Li,Chun-Qiang Xu,Ji-Yong Liu,Wei Zhou,Yu-Ke Li,Hai-Yang Yang,Shan Jiang,Yongkang Luo,Zeng-Wei Zhu,Guang-Han Cao###
(1665732, 1665734)
Topological Dirac states in a layered telluride TaPdTe5 with quasi-one-dimensional PdTe2 chains.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[233.0, 51.7, 'T', 5],[267.0, 2.1, 'K', 6],[353.0, 28.5, 'T', 8]

TaPdTe5
###Topological Dirac states in a layered telluride TaPdTe$_5$ with quasi-one-dimensional PdTe$_2$ chains|Wen-He Jiao,Xiao-Meng Xie,Yi Liu,Xiaofeng Xu,Bin Li,Chun-Qiang Xu,Ji-Yong Liu,Wei Zhou,Yu-Ke Li,Hai-Yang Yang,Shan Jiang,Yongkang Luo,Zeng-Wei Zhu,Guang-Han Cao###
(1665766, 1665769)
 We report the synthesis and systematic studies of a new layered ternarytelluride TaPdTe5 with quasi-one-dimensional PdTe2 chains.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0.7142857142857143,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[198.0, 51.7, 'T', 4],[232.0, 2.1, 'K', 5],[318.0, 28.5, 'T', 7]

PdTe2
###Topological Dirac states in a layered telluride TaPdTe$_5$ with quasi-one-dimensional PdTe$_2$ chains|Wen-He Jiao,Xiao-Meng Xie,Yi Liu,Xiaofeng Xu,Bin Li,Chun-Qiang Xu,Ji-Yong Liu,Wei Zhou,Yu-Ke Li,Hai-Yang Yang,Shan Jiang,Yongkang Luo,Zeng-Wei Zhu,Guang-Han Cao###
(1665779, 1665781)
 We report the synthesis and systematic studies of a new layered ternarytelluride TaPdTe5 with quasi-one-dimensional PdTe2 chains.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, 51.7, 'T', 4],[220.0, 2.1, 'K', 5],[306.0, 28.5, 'T', 7]

V
###Topological Dirac states in a layered telluride TaPdTe$_5$ with quasi-one-dimensional PdTe$_2$ chains|Wen-He Jiao,Xiao-Meng Xie,Yi Liu,Xiaofeng Xu,Bin Li,Chun-Qiang Xu,Ji-Yong Liu,Wei Zhou,Yu-Ke Li,Hai-Yang Yang,Shan Jiang,Yongkang Luo,Zeng-Wei Zhu,Guang-Han Cao###
(1665875, 1665875)
 Analysisof its curved field-dependent Hall resistivity, using the two-band model,indicates the hole-dominated transport with a high mobility muh<missing VAR>  2.38times 103 cm2 V-1 s<missing VAR>-1 at low temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 51.7, 'T', 2],[126.0, 2.1, 'K', 3],[212.0, 28.5, 'T', 5]

H
###Topological Dirac states in a layered telluride TaPdTe$_5$ with quasi-one-dimensional PdTe$_2$ chains|Wen-He Jiao,Xiao-Meng Xie,Yi Liu,Xiaofeng Xu,Bin Li,Chun-Qiang Xu,Ji-Yong Liu,Wei Zhou,Yu-Ke Li,Hai-Yang Yang,Shan Jiang,Yongkang Luo,Zeng-Wei Zhu,Guang-Han Cao###
(1666062, 1666062)
 The Shubnikov-de Haas(SdH) oscillations are detected at low temperatures and under magnetic fieldsabove 28.5 T.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 51.7, 'T', 3],[61.0, 2.1, 'K', 2],[25.0, 28.5, 'T', 0]

H
###Topological Dirac states in a layered telluride TaPdTe$_5$ with quasi-one-dimensional PdTe$_2$ chains|Wen-He Jiao,Xiao-Meng Xie,Yi Liu,Xiaofeng Xu,Bin Li,Chun-Qiang Xu,Ji-Yong Liu,Wei Zhou,Yu-Ke Li,Hai-Yang Yang,Shan Jiang,Yongkang Luo,Zeng-Wei Zhu,Guang-Han Cao###
(1666122, 1666122)
 Two effective masses m<missing VAR> (0.26me and 0.41me) areextracted from the oscillatory SdH data.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 51.7, 'T', 4],[121.0, 2.1, 'K', 3],[35.0, 28.5, 'T', 1]

TaPdTe5
###Topological Dirac states in a layered telluride TaPdTe$_5$ with quasi-one-dimensional PdTe$_2$ chains|Wen-He Jiao,Xiao-Meng Xie,Yi Liu,Xiaofeng Xu,Bin Li,Chun-Qiang Xu,Ji-Yong Liu,Wei Zhou,Yu-Ke Li,Hai-Yang Yang,Shan Jiang,Yongkang Luo,Zeng-Wei Zhu,Guang-Han Cao###
(1666174, 1666177)
 Our first-principles calculationsunveil a topological Dirac cone in its surface states, and, in particular, thetopological index indicates that TaPdTe5 is a topologically nontrivialmaterial.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0.7142857142857143,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[207.0, 51.7, 'T', 5],[173.0, 2.1, 'K', 4],[87.0, 28.5, 'T', 2]

CrI3
###Current-induced CrI3 surface spin-flop transition probed by proximity magnetoresistance in Pt|Tang Su,Mark Lohmann,Junxue Li,Yadong Xu,Ben Niu,Mohammed Alghamdi,Haidong Zhou,Yongtao Cui,Ran Cheng,Takashi Taniguchi,Kenji Watanabe,Jing Shi###
(1666203, 1666205)
Current-induced CrI3 surface spin-flop transition probed by proximity magnetoresistance in Pt.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[215.0, 150, 'nm', 3],[246.0, 2, 'T', 3],[282.0, 2, ',', 3],[302.0, 5, 'T', 3]

Pt
###Current-induced CrI3 surface spin-flop transition probed by proximity magnetoresistance in Pt|Tang Su,Mark Lohmann,Junxue Li,Yadong Xu,Ben Niu,Mohammed Alghamdi,Haidong Zhou,Yongtao Cui,Ran Cheng,Takashi Taniguchi,Kenji Watanabe,Jing Shi###
(1666225, 1666225)
Current-induced CrI3 surface spin-flop transition probed by proximity magnetoresistance in Pt.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[195.0, 150, 'nm', 3],[226.0, 2, 'T', 3],[262.0, 2, ',', 3],[282.0, 5, 'T', 3]

CrI3
###Current-induced CrI3 surface spin-flop transition probed by proximity magnetoresistance in Pt|Tang Su,Mark Lohmann,Junxue Li,Yadong Xu,Ben Niu,Mohammed Alghamdi,Haidong Zhou,Yongtao Cui,Ran Cheng,Takashi Taniguchi,Kenji Watanabe,Jing Shi###
(1666258, 1666260)
 By exploiting proximity coupling, we probe the spin state of the surfacelayers of CrI3, a van der Waals magnetic semiconductor, by measuring theinduced magnetoresistance (MR) of Pt in Pt/CrI3 nano-devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 150, 'nm', 2],[191.0, 2, 'T', 2],[227.0, 2, ',', 2],[247.0, 5, 'T', 2]

Pt
###Current-induced CrI3 surface spin-flop transition probed by proximity magnetoresistance in Pt|Tang Su,Mark Lohmann,Junxue Li,Yadong Xu,Ben Niu,Mohammed Alghamdi,Haidong Zhou,Yongtao Cui,Ran Cheng,Takashi Taniguchi,Kenji Watanabe,Jing Shi###
(1666294, 1666294)
 By exploiting proximity coupling, we probe the spin state of the surfacelayers of CrI3, a van der Waals magnetic semiconductor, by measuring theinduced magnetoresistance (MR) of Pt in Pt/CrI3 nano-devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 150, 'nm', 2],[157.0, 2, 'T', 2],[193.0, 2, ',', 2],[213.0, 5, 'T', 2]

Pt/CrI3
###Current-induced CrI3 surface spin-flop transition probed by proximity magnetoresistance in Pt|Tang Su,Mark Lohmann,Junxue Li,Yadong Xu,Ben Niu,Mohammed Alghamdi,Haidong Zhou,Yongtao Cui,Ran Cheng,Takashi Taniguchi,Kenji Watanabe,Jing Shi###
(1666298, 1666302)
 By exploiting proximity coupling, we probe the spin state of the surfacelayers of CrI3, a van der Waals magnetic semiconductor, by measuring theinduced magnetoresistance (MR) of Pt in Pt/CrI3 nano-devices.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[118.0, 150, 'nm', 2],[149.0, 2, 'T', 2],[185.0, 2, ',', 2],[205.0, 5, 'T', 2]

CrI3
###Current-induced CrI3 surface spin-flop transition probed by proximity magnetoresistance in Pt|Tang Su,Mark Lohmann,Junxue Li,Yadong Xu,Ben Niu,Mohammed Alghamdi,Haidong Zhou,Yongtao Cui,Ran Cheng,Takashi Taniguchi,Kenji Watanabe,Jing Shi###
(1666336, 1666338)
 We fabricate thedevices with clean and stable interfaces by placing freshly exfoliated CrI3flake atop pre-patterned thin Pt strip and encapsulating the Pt/CrI3heterostructure with hexagonal boron nitride (h<missing VAR>BN) in a protected environment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 150, 'nm', 1],[113.0, 2, 'T', 1],[149.0, 2, ',', 1],[169.0, 5, 'T', 1]

Pt
###Current-induced CrI3 surface spin-flop transition probed by proximity magnetoresistance in Pt|Tang Su,Mark Lohmann,Junxue Li,Yadong Xu,Ben Niu,Mohammed Alghamdi,Haidong Zhou,Yongtao Cui,Ran Cheng,Takashi Taniguchi,Kenji Watanabe,Jing Shi###
(1666351, 1666351)
 We fabricate thedevices with clean and stable interfaces by placing freshly exfoliated CrI3flake atop pre-patterned thin Pt strip and encapsulating the Pt/CrI3heterostructure with hexagonal boron nitride (h<missing VAR>BN) in a protected environment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 150, 'nm', 1],[100.0, 2, 'T', 1],[136.0, 2, ',', 1],[156.0, 5, 'T', 1]

Pt/CrI3
###Current-induced CrI3 surface spin-flop transition probed by proximity magnetoresistance in Pt|Tang Su,Mark Lohmann,Junxue Li,Yadong Xu,Ben Niu,Mohammed Alghamdi,Haidong Zhou,Yongtao Cui,Ran Cheng,Takashi Taniguchi,Kenji Watanabe,Jing Shi###
(1666361, 1666365)
 We fabricate thedevices with clean and stable interfaces by placing freshly exfoliated CrI3flake atop pre-patterned thin Pt strip and encapsulating the Pt/CrI3heterostructure with hexagonal boron nitride (h<missing VAR>BN) in a protected environment.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[55.0, 150, 'nm', 1],[86.0, 2, 'T', 1],[122.0, 2, ',', 1],[142.0, 5, 'T', 1]

N
###Current-induced CrI3 surface spin-flop transition probed by proximity magnetoresistance in Pt|Tang Su,Mark Lohmann,Junxue Li,Yadong Xu,Ben Niu,Mohammed Alghamdi,Haidong Zhou,Yongtao Cui,Ran Cheng,Takashi Taniguchi,Kenji Watanabe,Jing Shi###
(1666381, 1666381)
 We fabricate thedevices with clean and stable interfaces by placing freshly exfoliated CrI3flake atop pre-patterned thin Pt strip and encapsulating the Pt/CrI3heterostructure with hexagonal boron nitride (h<missing VAR>BN) in a protected environment.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 150, 'nm', 1],[70.0, 2, 'T', 1],[106.0, 2, ',', 1],[126.0, 5, 'T', 1]

In
###Current-induced CrI3 surface spin-flop transition probed by proximity magnetoresistance in Pt|Tang Su,Mark Lohmann,Junxue Li,Yadong Xu,Ben Niu,Mohammed Alghamdi,Haidong Zhou,Yongtao Cui,Ran Cheng,Takashi Taniguchi,Kenji Watanabe,Jing Shi###
(1666394, 1666394)
In devices consisting of a wide range of CrI3 thicknesses (30 to 150 nm), weobserve that an abrupt upward jump in Pt MR emerge at a 2 T magnetic fieldapplied perpendicularly to the layers when the current density exceeds2.5x<missing VAR>1010 A/m<missing VAR>2, followed by a gradual decrease over a range of 5 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 150, 'nm', 0],[57.0, 2, 'T', 0],[93.0, 2, ',', 0],[113.0, 5, 'T', 0]

CrI3
###Current-induced CrI3 surface spin-flop transition probed by proximity magnetoresistance in Pt|Tang Su,Mark Lohmann,Junxue Li,Yadong Xu,Ben Niu,Mohammed Alghamdi,Haidong Zhou,Yongtao Cui,Ran Cheng,Takashi Taniguchi,Kenji Watanabe,Jing Shi###
(1666410, 1666412)
In devices consisting of a wide range of CrI3 thicknesses (30 to 150 nm), weobserve that an abrupt upward jump in Pt MR emerge at a 2 T magnetic fieldapplied perpendicularly to the layers when the current density exceeds2.5x<missing VAR>1010 A/m<missing VAR>2, followed by a gradual decrease over a range of 5 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 150, 'nm', 0],[39.0, 2, 'T', 0],[75.0, 2, ',', 0],[95.0, 5, 'T', 0]

Pt
###Current-induced CrI3 surface spin-flop transition probed by proximity magnetoresistance in Pt|Tang Su,Mark Lohmann,Junxue Li,Yadong Xu,Ben Niu,Mohammed Alghamdi,Haidong Zhou,Yongtao Cui,Ran Cheng,Takashi Taniguchi,Kenji Watanabe,Jing Shi###
(1666441, 1666441)
In devices consisting of a wide range of CrI3 thicknesses (30 to 150 nm), weobserve that an abrupt upward jump in Pt MR emerge at a 2 T magnetic fieldapplied perpendicularly to the layers when the current density exceeds2.5x<missing VAR>1010 A/m<missing VAR>2, followed by a gradual decrease over a range of 5 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 150, 'nm', 0],[10.0, 2, 'T', 0],[46.0, 2, ',', 0],[66.0, 5, 'T', 0]

CrI3
###Current-induced CrI3 surface spin-flop transition probed by proximity magnetoresistance in Pt|Tang Su,Mark Lohmann,Junxue Li,Yadong Xu,Ben Niu,Mohammed Alghamdi,Haidong Zhou,Yongtao Cui,Ran Cheng,Takashi Taniguchi,Kenji Watanabe,Jing Shi###
(1666553, 1666555)
 Thesedistinct MR features suggest a spin-flop transition which reveals strongantiferromagnetic interlayer coupling in the surface layers of CrI3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 150, 'nm', 1],[102.0, 2, 'T', 1],[66.0, 2, ',', 1],[46.0, 5, 'T', 1]

Pt/CrI3
###Current-induced CrI3 surface spin-flop transition probed by proximity magnetoresistance in Pt|Tang Su,Mark Lohmann,Junxue Li,Yadong Xu,Ben Niu,Mohammed Alghamdi,Haidong Zhou,Yongtao Cui,Ran Cheng,Takashi Taniguchi,Kenji Watanabe,Jing Shi###
(1666575, 1666579)
 We studythe current dependence by holding the Pt/CrI3 sample at approximately the sametemperature to exclude the joule heating effect, and find that the MR jumpincreases with the current density, indicating a spin current origin.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[155.0, 150, 'nm', 2],[124.0, 2, 'T', 2],[88.0, 2, ',', 2],[68.0, 5, 'T', 2]

I
###Current-induced in-plane magnetization switching in biaxial ferrimagnetic insulator|Yongjian Zhou,Chenyang Guo,Caihua Wan,Xianzhe Chen,Xiaofeng Zhou,Ruiqi Zhang,Youdi Gu,Ruyi Chen,Huaqiang Wu,Xiufeng Han,Feng Pan,Cheng Song###
(1666728, 1666728)
 Ferrimagnetic insulators (FiM<missing VAR>I) have been intensively used in microwave andmagneto-optical devices as well as spin caloritronics, where theirmagnetization direction plays a fundamental role on the device performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Current-induced in-plane magnetization switching in biaxial ferrimagnetic insulator|Yongjian Zhou,Chenyang Guo,Caihua Wan,Xianzhe Chen,Xiaofeng Zhou,Ruiqi Zhang,Youdi Gu,Ruyi Chen,Huaqiang Wu,Xiufeng Han,Feng Pan,Cheng Song###
(1666829, 1666830)
 Herewe investigate current-induced spin-orbit torque (SOT) switching of themagnetization in Y3Fe5O12 (YIG)/Pt bilayers with in-plane magnetic anisotropy,where the switching is detected by spin Hall magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Y3Fe5O12
###Current-induced in-plane magnetization switching in biaxial ferrimagnetic insulator|Yongjian Zhou,Chenyang Guo,Caihua Wan,Xianzhe Chen,Xiaofeng Zhou,Ruiqi Zhang,Youdi Gu,Ruyi Chen,Huaqiang Wu,Xiufeng Han,Feng Pan,Cheng Song###
(1666845, 1666850)
 Herewe investigate current-induced spin-orbit torque (SOT) switching of themagnetization in Y3Fe5O12 (YIG)/Pt bilayers with in-plane magnetic anisotropy,where the switching is detected by spin Hall magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YI
###Current-induced in-plane magnetization switching in biaxial ferrimagnetic insulator|Yongjian Zhou,Chenyang Guo,Caihua Wan,Xianzhe Chen,Xiaofeng Zhou,Ruiqi Zhang,Youdi Gu,Ruyi Chen,Huaqiang Wu,Xiufeng Han,Feng Pan,Cheng Song###
(1666853, 1666854)
 Herewe investigate current-induced spin-orbit torque (SOT) switching of themagnetization in Y3Fe5O12 (YIG)/Pt bilayers with in-plane magnetic anisotropy,where the switching is detected by spin Hall magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Current-induced in-plane magnetization switching in biaxial ferrimagnetic insulator|Yongjian Zhou,Chenyang Guo,Caihua Wan,Xianzhe Chen,Xiaofeng Zhou,Ruiqi Zhang,Youdi Gu,Ruyi Chen,Huaqiang Wu,Xiufeng Han,Feng Pan,Cheng Song###
(1666858, 1666858)
 Herewe investigate current-induced spin-orbit torque (SOT) switching of themagnetization in Y3Fe5O12 (YIG)/Pt bilayers with in-plane magnetic anisotropy,where the switching is detected by spin Hall magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YI
###Current-induced in-plane magnetization switching in biaxial ferrimagnetic insulator|Yongjian Zhou,Chenyang Guo,Caihua Wan,Xianzhe Chen,Xiaofeng Zhou,Ruiqi Zhang,Youdi Gu,Ruyi Chen,Huaqiang Wu,Xiufeng Han,Feng Pan,Cheng Song###
(1666933, 1666934)
 The YIG<missing VAR> sublattices with antiparallel and unequal magnetic moments arealigned parallel or antiparallel to the direction of current pulses, which isconsistent to the Neel order switching in antiferromagnetic system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Current-induced in-plane magnetization switching in biaxial ferrimagnetic insulator|Yongjian Zhou,Chenyang Guo,Caihua Wan,Xianzhe Chen,Xiaofeng Zhou,Ruiqi Zhang,Youdi Gu,Ruyi Chen,Huaqiang Wu,Xiufeng Han,Feng Pan,Cheng Song###
(1667047, 1667047)
 It isproposed that such a switching behavior may be triggered by theantidamping-torque acting on the two antiparallel sublattices of FiM<missing VAR>I.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MgO
###Interfacial giant tunnel magnetoresistance and bulk-induced large perpendicular magnetic anisotropy in (111)-oriented junctions with fcc ferromagnetic alloys: A first-principles study|Keisuke Masuda,Hiroyoshi Itoh,Yoshiaki Sonobe,Hiroaki Sukegawa,Seiji Mitani,Yoshio Miura###
(1667247, 1667248)
 We study the tunnel magnetoresistance (TMR) effect and magnetocrystallineanisotropy in a series of magnetic tunnel junctions (MTJs) with L<missing VAR>11-orderedfcc ferromagnetic alloys and MgO barrier along the [111] direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 2000, '%', 2],[313.0, 10, ',', 6]

Co
###Interfacial giant tunnel magnetoresistance and bulk-induced large perpendicular magnetic anisotropy in (111)-oriented junctions with fcc ferromagnetic alloys: A first-principles study|Keisuke Masuda,Hiroyoshi Itoh,Yoshiaki Sonobe,Hiroaki Sukegawa,Seiji Mitani,Yoshio Miura###
(1667342, 1667342)
 The analysis shows that the MTJs with Co-based alloys (CoNi,CoPt, and CoPd) have high TMR ratios over 2000%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 2000, '%', 0],[219.0, 10, ',', 4]

CoNi
###Interfacial giant tunnel magnetoresistance and bulk-induced large perpendicular magnetic anisotropy in (111)-oriented junctions with fcc ferromagnetic alloys: A first-principles study|Keisuke Masuda,Hiroyoshi Itoh,Yoshiaki Sonobe,Hiroaki Sukegawa,Seiji Mitani,Yoshio Miura###
(1667349, 1667350)
 The analysis shows that the MTJs with Co-based alloys (CoNi,CoPt, and CoPd) have high TMR ratios over 2000%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 2000, '%', 0],[211.0, 10, ',', 4]

CoPt
###Interfacial giant tunnel magnetoresistance and bulk-induced large perpendicular magnetic anisotropy in (111)-oriented junctions with fcc ferromagnetic alloys: A first-principles study|Keisuke Masuda,Hiroyoshi Itoh,Yoshiaki Sonobe,Hiroaki Sukegawa,Seiji Mitani,Yoshio Miura###
(1667354, 1667355)
 The analysis shows that the MTJs with Co-based alloys (CoNi,CoPt, and CoPd) have high TMR ratios over 2000%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 2000, '%', 0],[206.0, 10, ',', 4]

Pd
###Interfacial giant tunnel magnetoresistance and bulk-induced large perpendicular magnetic anisotropy in (111)-oriented junctions with fcc ferromagnetic alloys: A first-principles study|Keisuke Masuda,Hiroyoshi Itoh,Yoshiaki Sonobe,Hiroaki Sukegawa,Seiji Mitani,Yoshio Miura###
(1667361, 1667361)
 The analysis shows that the MTJs with Co-based alloys (CoNi,CoPt, and CoPd) have high TMR ratios over 2000%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 2000, '%', 0],[200.0, 10, ',', 4]

Co
###Interfacial giant tunnel magnetoresistance and bulk-induced large perpendicular magnetic anisotropy in (111)-oriented junctions with fcc ferromagnetic alloys: A first-principles study|Keisuke Masuda,Hiroyoshi Itoh,Yoshiaki Sonobe,Hiroaki Sukegawa,Seiji Mitani,Yoshio Miura###
(1667393, 1667393)
 These MTJs haveenergetically favored Co-O interfaces where interfacial antibonding between Cod<missing VAR> and O p<missing VAR> states is formed around the Fermi level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 2000, '%', 1],[168.0, 10, ',', 3]

O
###Interfacial giant tunnel magnetoresistance and bulk-induced large perpendicular magnetic anisotropy in (111)-oriented junctions with fcc ferromagnetic alloys: A first-principles study|Keisuke Masuda,Hiroyoshi Itoh,Yoshiaki Sonobe,Hiroaki Sukegawa,Seiji Mitani,Yoshio Miura###
(1667395, 1667395)
 These MTJs haveenergetically favored Co-O interfaces where interfacial antibonding between Cod<missing VAR> and O p<missing VAR> states is formed around the Fermi level.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 2000, '%', 1],[166.0, 10, ',', 3]

Co
###Interfacial giant tunnel magnetoresistance and bulk-induced large perpendicular magnetic anisotropy in (111)-oriented junctions with fcc ferromagnetic alloys: A first-principles study|Keisuke Masuda,Hiroyoshi Itoh,Yoshiaki Sonobe,Hiroaki Sukegawa,Seiji Mitani,Yoshio Miura###
(1667407, 1667407)
 These MTJs haveenergetically favored Co-O interfaces where interfacial antibonding between Cod<missing VAR> and O p<missing VAR> states is formed around the Fermi level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 2000, '%', 1],[154.0, 10, ',', 3]

O
###Interfacial giant tunnel magnetoresistance and bulk-induced large perpendicular magnetic anisotropy in (111)-oriented junctions with fcc ferromagnetic alloys: A first-principles study|Keisuke Masuda,Hiroyoshi Itoh,Yoshiaki Sonobe,Hiroaki Sukegawa,Seiji Mitani,Yoshio Miura###
(1667414, 1667414)
 These MTJs haveenergetically favored Co-O interfaces where interfacial antibonding between Cod<missing VAR> and O p<missing VAR> states is formed around the Fermi level.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 2000, '%', 1],[147.0, 10, ',', 3]

P
###Interfacial giant tunnel magnetoresistance and bulk-induced large perpendicular magnetic anisotropy in (111)-oriented junctions with fcc ferromagnetic alloys: A first-principles study|Keisuke Masuda,Hiroyoshi Itoh,Yoshiaki Sonobe,Hiroaki Sukegawa,Seiji Mitani,Yoshio Miura###
(1667525, 1667525)
 Our calculation ofthe magnetocrystalline anisotropy shows that many L<missing VAR>11 alloys have largeperpendicular magnetic anisotropy (PM<missing VAR>A).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 2000, '%', 3],[36.0, 10, ',', 1]

In
###Interfacial giant tunnel magnetoresistance and bulk-induced large perpendicular magnetic anisotropy in (111)-oriented junctions with fcc ferromagnetic alloys: A first-principles study|Keisuke Masuda,Hiroyoshi Itoh,Yoshiaki Sonobe,Hiroaki Sukegawa,Seiji Mitani,Yoshio Miura###
(1667531, 1667531)
 In particular, CoPt has the largestvalue of anisotropy energy Krm u<missing VAR> approx 10,rm MJ/m<missing VAR>3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 2000, '%', 4],[30.0, 10, ',', 0]

CoPt
###Interfacial giant tunnel magnetoresistance and bulk-induced large perpendicular magnetic anisotropy in (111)-oriented junctions with fcc ferromagnetic alloys: A first-principles study|Keisuke Masuda,Hiroyoshi Itoh,Yoshiaki Sonobe,Hiroaki Sukegawa,Seiji Mitani,Yoshio Miura###
(1667536, 1667537)
 In particular, CoPt has the largestvalue of anisotropy energy Krm u<missing VAR> approx 10,rm MJ/m<missing VAR>3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 2000, '%', 4],[24.0, 10, ',', 0]

K
###Interfacial giant tunnel magnetoresistance and bulk-induced large perpendicular magnetic anisotropy in (111)-oriented junctions with fcc ferromagnetic alloys: A first-principles study|Keisuke Masuda,Hiroyoshi Itoh,Yoshiaki Sonobe,Hiroaki Sukegawa,Seiji Mitani,Yoshio Miura###
(1667554, 1667554)
 In particular, CoPt has the largestvalue of anisotropy energy Krm u<missing VAR> approx 10,rm MJ/m<missing VAR>3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 2000, '%', 4],[7.0, 10, ',', 0]

P
###Interfacial giant tunnel magnetoresistance and bulk-induced large perpendicular magnetic anisotropy in (111)-oriented junctions with fcc ferromagnetic alloys: A first-principles study|Keisuke Masuda,Hiroyoshi Itoh,Yoshiaki Sonobe,Hiroaki Sukegawa,Seiji Mitani,Yoshio Miura###
(1667589, 1667589)
 We furtherconduct a perturbation analysis of the PM<missing VAR>A with respect to the spin-orbitinteraction and reveal that the large PM<missing VAR>A in CoPt and CoNi mainly originatesfrom spin-conserving perturbation processes around the Fermi level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[213.0, 2000, '%', 5],[28.0, 10, ',', 1]

P
###Interfacial giant tunnel magnetoresistance and bulk-induced large perpendicular magnetic anisotropy in (111)-oriented junctions with fcc ferromagnetic alloys: A first-principles study|Keisuke Masuda,Hiroyoshi Itoh,Yoshiaki Sonobe,Hiroaki Sukegawa,Seiji Mitani,Yoshio Miura###
(1667618, 1667618)
 We furtherconduct a perturbation analysis of the PM<missing VAR>A with respect to the spin-orbitinteraction and reveal that the large PM<missing VAR>A in CoPt and CoNi mainly originatesfrom spin-conserving perturbation processes around the Fermi level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[242.0, 2000, '%', 5],[57.0, 10, ',', 1]

CoPt
###Interfacial giant tunnel magnetoresistance and bulk-induced large perpendicular magnetic anisotropy in (111)-oriented junctions with fcc ferromagnetic alloys: A first-principles study|Keisuke Masuda,Hiroyoshi Itoh,Yoshiaki Sonobe,Hiroaki Sukegawa,Seiji Mitani,Yoshio Miura###
(1667624, 1667625)
 We furtherconduct a perturbation analysis of the PM<missing VAR>A with respect to the spin-orbitinteraction and reveal that the large PM<missing VAR>A in CoPt and CoNi mainly originatesfrom spin-conserving perturbation processes around the Fermi level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[248.0, 2000, '%', 5],[63.0, 10, ',', 1]

CoNi
###Interfacial giant tunnel magnetoresistance and bulk-induced large perpendicular magnetic anisotropy in (111)-oriented junctions with fcc ferromagnetic alloys: A first-principles study|Keisuke Masuda,Hiroyoshi Itoh,Yoshiaki Sonobe,Hiroaki Sukegawa,Seiji Mitani,Yoshio Miura###
(1667629, 1667630)
 We furtherconduct a perturbation analysis of the PM<missing VAR>A with respect to the spin-orbitinteraction and reveal that the large PM<missing VAR>A in CoPt and CoNi mainly originatesfrom spin-conserving perturbation processes around the Fermi level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[253.0, 2000, '%', 5],[68.0, 10, ',', 1]

NiO
###Current-induced magnetization switching of exchange-biased NiO heterostructures characterized by spin-orbit torque|Krzysztof Grochot,Łukasz Karwacki,Stanisław Łazarski,Witold Skowroński,Jarosław Kanak,Wiesław Powroźnik,Piotr Kuświk,Mateusz Kowacz,Feliks Stobiecki,Tomasz Stobiecki###
(1667678, 1667679)
Current-induced magnetization switching of exchange-biased NiO heterostructures characterized by spin-orbit torque.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Current-induced magnetization switching of exchange-biased NiO heterostructures characterized by spin-orbit torque|Krzysztof Grochot,Łukasz Karwacki,Stanisław Łazarski,Witold Skowroński,Jarosław Kanak,Wiesław Powroźnik,Piotr Kuświk,Mateusz Kowacz,Feliks Stobiecki,Tomasz Stobiecki###
(1667694, 1667694)
 In this work, we study magnetization switching induced by spin-orbit torquein W(Pt)/Co/NiO heterostructures with variable thickness of heavy-metal layersW and Pt, perpendicularly magnetized Co layer and an antiferromagnetic NiOlayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W(Pt)/Co/NiO
###Current-induced magnetization switching of exchange-biased NiO heterostructures characterized by spin-orbit torque|Krzysztof Grochot,Łukasz Karwacki,Stanisław Łazarski,Witold Skowroński,Jarosław Kanak,Wiesław Powroźnik,Piotr Kuświk,Mateusz Kowacz,Feliks Stobiecki,Tomasz Stobiecki###
(1667722, 1667730)
 In this work, we study magnetization switching induced by spin-orbit torquein W(Pt)/Co/NiO heterostructures with variable thickness of heavy-metal layersW and Pt, perpendicularly magnetized Co layer and an antiferromagnetic NiOlayer.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

W
###Current-induced magnetization switching of exchange-biased NiO heterostructures characterized by spin-orbit torque|Krzysztof Grochot,Łukasz Karwacki,Stanisław Łazarski,Witold Skowroński,Jarosław Kanak,Wiesław Powroźnik,Piotr Kuświk,Mateusz Kowacz,Feliks Stobiecki,Tomasz Stobiecki###
(1667749, 1667749)
 In this work, we study magnetization switching induced by spin-orbit torquein W(Pt)/Co/NiO heterostructures with variable thickness of heavy-metal layersW and Pt, perpendicularly magnetized Co layer and an antiferromagnetic NiOlayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Current-induced magnetization switching of exchange-biased NiO heterostructures characterized by spin-orbit torque|Krzysztof Grochot,Łukasz Karwacki,Stanisław Łazarski,Witold Skowroński,Jarosław Kanak,Wiesław Powroźnik,Piotr Kuświk,Mateusz Kowacz,Feliks Stobiecki,Tomasz Stobiecki###
(1667753, 1667753)
 In this work, we study magnetization switching induced by spin-orbit torquein W(Pt)/Co/NiO heterostructures with variable thickness of heavy-metal layersW and Pt, perpendicularly magnetized Co layer and an antiferromagnetic NiOlayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Current-induced magnetization switching of exchange-biased NiO heterostructures characterized by spin-orbit torque|Krzysztof Grochot,Łukasz Karwacki,Stanisław Łazarski,Witold Skowroński,Jarosław Kanak,Wiesław Powroźnik,Piotr Kuświk,Mateusz Kowacz,Feliks Stobiecki,Tomasz Stobiecki###
(1667760, 1667760)
 In this work, we study magnetization switching induced by spin-orbit torquein W(Pt)/Co/NiO heterostructures with variable thickness of heavy-metal layersW and Pt, perpendicularly magnetized Co layer and an antiferromagnetic NiOlayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiO
###Current-induced magnetization switching of exchange-biased NiO heterostructures characterized by spin-orbit torque|Krzysztof Grochot,Łukasz Karwacki,Stanisław Łazarski,Witold Skowroński,Jarosław Kanak,Wiesław Powroźnik,Piotr Kuświk,Mateusz Kowacz,Feliks Stobiecki,Tomasz Stobiecki###
(1667770, 1667771)
 In this work, we study magnetization switching induced by spin-orbit torquein W(Pt)/Co/NiO heterostructures with variable thickness of heavy-metal layersW and Pt, perpendicularly magnetized Co layer and an antiferromagnetic NiOlayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Current-induced magnetization switching of exchange-biased NiO heterostructures characterized by spin-orbit torque|Krzysztof Grochot,Łukasz Karwacki,Stanisław Łazarski,Witold Skowroński,Jarosław Kanak,Wiesław Powroźnik,Piotr Kuświk,Mateusz Kowacz,Feliks Stobiecki,Tomasz Stobiecki###
(1667884, 1667884)
 Several Hall-bar devices possessing in-plane exchange bias fromboth systems were selected and analyzed in relation to our analytical switchingmodel of critical current density as a function of Pt and W thickness,resulting in estimation of effective spin Hall angle and perpendiculareffective magnetic anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Current-induced magnetization switching of exchange-biased NiO heterostructures characterized by spin-orbit torque|Krzysztof Grochot,Łukasz Karwacki,Stanisław Łazarski,Witold Skowroński,Jarosław Kanak,Wiesław Powroźnik,Piotr Kuświk,Mateusz Kowacz,Feliks Stobiecki,Tomasz Stobiecki###
(1667888, 1667888)
 Several Hall-bar devices possessing in-plane exchange bias fromboth systems were selected and analyzed in relation to our analytical switchingmodel of critical current density as a function of Pt and W thickness,resulting in estimation of effective spin Hall angle and perpendiculareffective magnetic anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt/Co/NiO
###Current-induced magnetization switching of exchange-biased NiO heterostructures characterized by spin-orbit torque|Krzysztof Grochot,Łukasz Karwacki,Stanisław Łazarski,Witold Skowroński,Jarosław Kanak,Wiesław Powroźnik,Piotr Kuświk,Mateusz Kowacz,Feliks Stobiecki,Tomasz Stobiecki###
(1667932, 1667937)
 We demonstrate in both the Pt/Co/NiO and theW/Co/NiO systems the deterministic Co magnetization switching without externalmagnetic field which was replaced by in-plane exchange bias field.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

W/Co/NiO
###Current-induced magnetization switching of exchange-biased NiO heterostructures characterized by spin-orbit torque|Krzysztof Grochot,Łukasz Karwacki,Stanisław Łazarski,Witold Skowroński,Jarosław Kanak,Wiesław Powroźnik,Piotr Kuświk,Mateusz Kowacz,Feliks Stobiecki,Tomasz Stobiecki###
(1667944, 1667949)
 We demonstrate in both the Pt/Co/NiO and theW/Co/NiO systems the deterministic Co magnetization switching without externalmagnetic field which was replaced by in-plane exchange bias field.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Co
###Current-induced magnetization switching of exchange-biased NiO heterostructures characterized by spin-orbit torque|Krzysztof Grochot,Łukasz Karwacki,Stanisław Łazarski,Witold Skowroński,Jarosław Kanak,Wiesław Powroźnik,Piotr Kuświk,Mateusz Kowacz,Feliks Stobiecki,Tomasz Stobiecki###
(1667957, 1667957)
 We demonstrate in both the Pt/Co/NiO and theW/Co/NiO systems the deterministic Co magnetization switching without externalmagnetic field which was replaced by in-plane exchange bias field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Current-induced magnetization switching of exchange-biased NiO heterostructures characterized by spin-orbit torque|Krzysztof Grochot,Łukasz Karwacki,Stanisław Łazarski,Witold Skowroński,Jarosław Kanak,Wiesław Powroźnik,Piotr Kuświk,Mateusz Kowacz,Feliks Stobiecki,Tomasz Stobiecki###
(1668019, 1668019)
 Moreover, weshow that due to a higher effective spin Hall angle in W than in Pt-systems therelative difference between the resistance states in the magnetization currentswitching to difference between the resistance states in magnetic fieldswitching determined by anomalous Hall effect (Delta R<missing VAR>/DeltaR<missing VAR>textAHE) is about twice higher in W than Pt, while critical switchingcurrent density in W is one order lower than in Pt-devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Current-induced magnetization switching of exchange-biased NiO heterostructures characterized by spin-orbit torque|Krzysztof Grochot,Łukasz Karwacki,Stanisław Łazarski,Witold Skowroński,Jarosław Kanak,Wiesław Powroźnik,Piotr Kuświk,Mateusz Kowacz,Feliks Stobiecki,Tomasz Stobiecki###
(1668025, 1668025)
 Moreover, weshow that due to a higher effective spin Hall angle in W than in Pt-systems therelative difference between the resistance states in the magnetization currentswitching to difference between the resistance states in magnetic fieldswitching determined by anomalous Hall effect (Delta R<missing VAR>/DeltaR<missing VAR>textAHE) is about twice higher in W than Pt, while critical switchingcurrent density in W is one order lower than in Pt-devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Current-induced magnetization switching of exchange-biased NiO heterostructures characterized by spin-orbit torque|Krzysztof Grochot,Łukasz Karwacki,Stanisław Łazarski,Witold Skowroński,Jarosław Kanak,Wiesław Powroźnik,Piotr Kuświk,Mateusz Kowacz,Feliks Stobiecki,Tomasz Stobiecki###
(1668097, 1668097)
 Moreover, weshow that due to a higher effective spin Hall angle in W than in Pt-systems therelative difference between the resistance states in the magnetization currentswitching to difference between the resistance states in magnetic fieldswitching determined by anomalous Hall effect (Delta R<missing VAR>/DeltaR<missing VAR>textAHE) is about twice higher in W than Pt, while critical switchingcurrent density in W is one order lower than in Pt-devices.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Current-induced magnetization switching of exchange-biased NiO heterostructures characterized by spin-orbit torque|Krzysztof Grochot,Łukasz Karwacki,Stanisław Łazarski,Witold Skowroński,Jarosław Kanak,Wiesław Powroźnik,Piotr Kuświk,Mateusz Kowacz,Feliks Stobiecki,Tomasz Stobiecki###
(1668111, 1668111)
 Moreover, weshow that due to a higher effective spin Hall angle in W than in Pt-systems therelative difference between the resistance states in the magnetization currentswitching to difference between the resistance states in magnetic fieldswitching determined by anomalous Hall effect (Delta R<missing VAR>/DeltaR<missing VAR>textAHE) is about twice higher in W than Pt, while critical switchingcurrent density in W is one order lower than in Pt-devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Current-induced magnetization switching of exchange-biased NiO heterostructures characterized by spin-orbit torque|Krzysztof Grochot,Łukasz Karwacki,Stanisław Łazarski,Witold Skowroński,Jarosław Kanak,Wiesław Powroźnik,Piotr Kuświk,Mateusz Kowacz,Feliks Stobiecki,Tomasz Stobiecki###
(1668115, 1668115)
 Moreover, weshow that due to a higher effective spin Hall angle in W than in Pt-systems therelative difference between the resistance states in the magnetization currentswitching to difference between the resistance states in magnetic fieldswitching determined by anomalous Hall effect (Delta R<missing VAR>/DeltaR<missing VAR>textAHE) is about twice higher in W than Pt, while critical switchingcurrent density in W is one order lower than in Pt-devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Current-induced magnetization switching of exchange-biased NiO heterostructures characterized by spin-orbit torque|Krzysztof Grochot,Łukasz Karwacki,Stanisław Łazarski,Witold Skowroński,Jarosław Kanak,Wiesław Powroźnik,Piotr Kuświk,Mateusz Kowacz,Feliks Stobiecki,Tomasz Stobiecki###
(1668131, 1668131)
 Moreover, weshow that due to a higher effective spin Hall angle in W than in Pt-systems therelative difference between the resistance states in the magnetization currentswitching to difference between the resistance states in magnetic fieldswitching determined by anomalous Hall effect (Delta R<missing VAR>/DeltaR<missing VAR>textAHE) is about twice higher in W than Pt, while critical switchingcurrent density in W is one order lower than in Pt-devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Current-induced magnetization switching of exchange-biased NiO heterostructures characterized by spin-orbit torque|Krzysztof Grochot,Łukasz Karwacki,Stanisław Łazarski,Witold Skowroński,Jarosław Kanak,Wiesław Powroźnik,Piotr Kuświk,Mateusz Kowacz,Feliks Stobiecki,Tomasz Stobiecki###
(1668145, 1668145)
 Moreover, weshow that due to a higher effective spin Hall angle in W than in Pt-systems therelative difference between the resistance states in the magnetization currentswitching to difference between the resistance states in magnetic fieldswitching determined by anomalous Hall effect (Delta R<missing VAR>/DeltaR<missing VAR>textAHE) is about twice higher in W than Pt, while critical switchingcurrent density in W is one order lower than in Pt-devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

COVI
###Magnetic Immunoassays: A Review of Virus and Pathogen Detection Before and Amidst the Coronavirus Disease-19 (COVID-19)|Kai Wu,Renata Saha,Diqing Su,Venkatramana D. Krishna,Jinming Liu,Maxim C-J Cheeran,Jian-Ping Wang###
(1668215, 1668218)
Magnetic Immunoassays A Review of Virus and Pathogen Detection Before and Amidst the Coronavirus Disease-19 (COVID<missing VAR>-19).
Featurization terminated normally.
0,0,0,0,0,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 2020, ',', 2],[115.0, -19, ',', 2]

S
###Magnetic Immunoassays: A Review of Virus and Pathogen Detection Before and Amidst the Coronavirus Disease-19 (COVID-19)|Kai Wu,Renata Saha,Diqing Su,Venkatramana D. Krishna,Jinming Liu,Maxim C-J Cheeran,Jian-Ping Wang###
(1668242, 1668242)
 The novel severe acute respiratory syndrome coronavirus 2 (SAR<missing VAR>S-CoV-2), whichcauses coronavirus disease 2019 (COVID<missing VAR>-19), is a threat to the globalhealthcare system and economic security.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 2020, ',', 1],[91.0, -19, ',', 1]

S
###Magnetic Immunoassays: A Review of Virus and Pathogen Detection Before and Amidst the Coronavirus Disease-19 (COVID-19)|Kai Wu,Renata Saha,Diqing Su,Venkatramana D. Krishna,Jinming Liu,Maxim C-J Cheeran,Jian-Ping Wang###
(1668245, 1668245)
 The novel severe acute respiratory syndrome coronavirus 2 (SAR<missing VAR>S-CoV-2), whichcauses coronavirus disease 2019 (COVID<missing VAR>-19), is a threat to the globalhealthcare system and economic security.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 2020, ',', 1],[88.0, -19, ',', 1]

CoV
###Magnetic Immunoassays: A Review of Virus and Pathogen Detection Before and Amidst the Coronavirus Disease-19 (COVID-19)|Kai Wu,Renata Saha,Diqing Su,Venkatramana D. Krishna,Jinming Liu,Maxim C-J Cheeran,Jian-Ping Wang###
(1668247, 1668248)
 The novel severe acute respiratory syndrome coronavirus 2 (SAR<missing VAR>S-CoV-2), whichcauses coronavirus disease 2019 (COVID<missing VAR>-19), is a threat to the globalhealthcare system and economic security.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 2020, ',', 1],[85.0, -19, ',', 1]

COVI
###Magnetic Immunoassays: A Review of Virus and Pathogen Detection Before and Amidst the Coronavirus Disease-19 (COVID-19)|Kai Wu,Renata Saha,Diqing Su,Venkatramana D. Krishna,Jinming Liu,Maxim C-J Cheeran,Jian-Ping Wang###
(1668266, 1668269)
 The novel severe acute respiratory syndrome coronavirus 2 (SAR<missing VAR>S-CoV-2), whichcauses coronavirus disease 2019 (COVID<missing VAR>-19), is a threat to the globalhealthcare system and economic security.
Featurization terminated normally.
0,0,0,0,0,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 2020, ',', 1],[64.0, -19, ',', 1]

As
###Magnetic Immunoassays: A Review of Virus and Pathogen Detection Before and Amidst the Coronavirus Disease-19 (COVID-19)|Kai Wu,Renata Saha,Diqing Su,Venkatramana D. Krishna,Jinming Liu,Maxim C-J Cheeran,Jian-Ping Wang###
(1668300, 1668300)
 As of July 2020, no specific drugs orvaccines are yet available for COVID<missing VAR>-19, fast and accurate diagnosis forSAR<missing VAR>S-CoV-2 is essential in slowing down the spread of COVID<missing VAR>-19 and forefficient implementation of control and containment strategies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 2020, ',', 0],[33.0, -19, ',', 0]

COVI
###Magnetic Immunoassays: A Review of Virus and Pathogen Detection Before and Amidst the Coronavirus Disease-19 (COVID-19)|Kai Wu,Renata Saha,Diqing Su,Venkatramana D. Krishna,Jinming Liu,Maxim C-J Cheeran,Jian-Ping Wang###
(1668328, 1668331)
 As of July 2020, no specific drugs orvaccines are yet available for COVID<missing VAR>-19, fast and accurate diagnosis forSAR<missing VAR>S-CoV-2 is essential in slowing down the spread of COVID<missing VAR>-19 and forefficient implementation of control and containment strategies.
Featurization terminated normally.
0,0,0,0,0,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 2020, ',', 0],[2.0, -19, ',', 0]

S
###Magnetic Immunoassays: A Review of Virus and Pathogen Detection Before and Amidst the Coronavirus Disease-19 (COVID-19)|Kai Wu,Renata Saha,Diqing Su,Venkatramana D. Krishna,Jinming Liu,Maxim C-J Cheeran,Jian-Ping Wang###
(1668348, 1668348)
 As of July 2020, no specific drugs orvaccines are yet available for COVID<missing VAR>-19, fast and accurate diagnosis forSAR<missing VAR>S-CoV-2 is essential in slowing down the spread of COVID<missing VAR>-19 and forefficient implementation of control and containment strategies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 2020, ',', 0],[15.0, -19, ',', 0]

S
###Magnetic Immunoassays: A Review of Virus and Pathogen Detection Before and Amidst the Coronavirus Disease-19 (COVID-19)|Kai Wu,Renata Saha,Diqing Su,Venkatramana D. Krishna,Jinming Liu,Maxim C-J Cheeran,Jian-Ping Wang###
(1668351, 1668351)
 As of July 2020, no specific drugs orvaccines are yet available for COVID<missing VAR>-19, fast and accurate diagnosis forSAR<missing VAR>S-CoV-2 is essential in slowing down the spread of COVID<missing VAR>-19 and forefficient implementation of control and containment strategies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 2020, ',', 0],[18.0, -19, ',', 0]

CoV
###Magnetic Immunoassays: A Review of Virus and Pathogen Detection Before and Amidst the Coronavirus Disease-19 (COVID-19)|Kai Wu,Renata Saha,Diqing Su,Venkatramana D. Krishna,Jinming Liu,Maxim C-J Cheeran,Jian-Ping Wang###
(1668353, 1668354)
 As of July 2020, no specific drugs orvaccines are yet available for COVID<missing VAR>-19, fast and accurate diagnosis forSAR<missing VAR>S-CoV-2 is essential in slowing down the spread of COVID<missing VAR>-19 and forefficient implementation of control and containment strategies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 2020, ',', 0],[20.0, -19, ',', 0]

COVI
###Magnetic Immunoassays: A Review of Virus and Pathogen Detection Before and Amidst the Coronavirus Disease-19 (COVID-19)|Kai Wu,Renata Saha,Diqing Su,Venkatramana D. Krishna,Jinming Liu,Maxim C-J Cheeran,Jian-Ping Wang###
(1668374, 1668377)
 As of July 2020, no specific drugs orvaccines are yet available for COVID<missing VAR>-19, fast and accurate diagnosis forSAR<missing VAR>S-CoV-2 is essential in slowing down the spread of COVID<missing VAR>-19 and forefficient implementation of control and containment strategies.
Featurization terminated normally.
0,0,0,0,0,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 2020, ',', 0],[41.0, -19, ',', 0]

COVI
###Magnetic Immunoassays: A Review of Virus and Pathogen Detection Before and Amidst the Coronavirus Disease-19 (COVID-19)|Kai Wu,Renata Saha,Diqing Su,Venkatramana D. Krishna,Jinming Liu,Maxim C-J Cheeran,Jian-Ping Wang###
(1668560, 1668563)
 Herein, this review covers the literatures of magneticimmunoassay platforms for virus and pathogen detections, before COVID<missing VAR>-19.
Featurization terminated normally.
0,0,0,0,0,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[254.0, 2020, ',', 4],[227.0, -19, ',', 4]

S
###Magnetic Immunoassays: A Review of Virus and Pathogen Detection Before and Amidst the Coronavirus Disease-19 (COVID-19)|Kai Wu,Renata Saha,Diqing Su,Venkatramana D. Krishna,Jinming Liu,Maxim C-J Cheeran,Jian-Ping Wang###
(1668606, 1668606)
 Wereviewed the popular magnetic immunoassay platforms including magnetoresistance(MR) sensors, magnetic particle spectroscopy (M<missing VAR>PS), and nuclear magneticresonance (NMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[300.0, 2020, ',', 5],[273.0, -19, ',', 5]

N
###Magnetic Immunoassays: A Review of Virus and Pathogen Detection Before and Amidst the Coronavirus Disease-19 (COVID-19)|Kai Wu,Renata Saha,Diqing Su,Venkatramana D. Krishna,Jinming Liu,Maxim C-J Cheeran,Jian-Ping Wang###
(1668620, 1668620)
 Wereviewed the popular magnetic immunoassay platforms including magnetoresistance(MR) sensors, magnetic particle spectroscopy (M<missing VAR>PS), and nuclear magneticresonance (NMR).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[314.0, 2020, ',', 5],[287.0, -19, ',', 5]

(POC)
###Magnetic Immunoassays: A Review of Virus and Pathogen Detection Before and Amidst the Coronavirus Disease-19 (COVID-19)|Kai Wu,Renata Saha,Diqing Su,Venkatramana D. Krishna,Jinming Liu,Maxim C-J Cheeran,Jian-Ping Wang###
(1668634, 1668638)
 Magnetic Point-of-Care (POC) diagnostic kits are also reviewedaiming at developing plug-and-play diagnostics to manage the SAR<missing VAR>S-CoV-2outbreak as well as preventing future epidemics.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[328.0, 2020, ',', 6],[301.0, -19, ',', 6]

S
###Magnetic Immunoassays: A Review of Virus and Pathogen Detection Before and Amidst the Coronavirus Disease-19 (COVID-19)|Kai Wu,Renata Saha,Diqing Su,Venkatramana D. Krishna,Jinming Liu,Maxim C-J Cheeran,Jian-Ping Wang###
(1668671, 1668671)
 Magnetic Point-of-Care (POC) diagnostic kits are also reviewedaiming at developing plug-and-play diagnostics to manage the SAR<missing VAR>S-CoV-2outbreak as well as preventing future epidemics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[365.0, 2020, ',', 6],[338.0, -19, ',', 6]

S
###Magnetic Immunoassays: A Review of Virus and Pathogen Detection Before and Amidst the Coronavirus Disease-19 (COVID-19)|Kai Wu,Renata Saha,Diqing Su,Venkatramana D. Krishna,Jinming Liu,Maxim C-J Cheeran,Jian-Ping Wang###
(1668674, 1668674)
 Magnetic Point-of-Care (POC) diagnostic kits are also reviewedaiming at developing plug-and-play diagnostics to manage the SAR<missing VAR>S-CoV-2outbreak as well as preventing future epidemics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[368.0, 2020, ',', 6],[341.0, -19, ',', 6]

CoV
###Magnetic Immunoassays: A Review of Virus and Pathogen Detection Before and Amidst the Coronavirus Disease-19 (COVID-19)|Kai Wu,Renata Saha,Diqing Su,Venkatramana D. Krishna,Jinming Liu,Maxim C-J Cheeran,Jian-Ping Wang###
(1668676, 1668677)
 Magnetic Point-of-Care (POC) diagnostic kits are also reviewedaiming at developing plug-and-play diagnostics to manage the SAR<missing VAR>S-CoV-2outbreak as well as preventing future epidemics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[370.0, 2020, ',', 6],[343.0, -19, ',', 6]

In
###Magnetic Immunoassays: A Review of Virus and Pathogen Detection Before and Amidst the Coronavirus Disease-19 (COVID-19)|Kai Wu,Renata Saha,Diqing Su,Venkatramana D. Krishna,Jinming Liu,Maxim C-J Cheeran,Jian-Ping Wang###
(1668697, 1668697)
 In addition, other platformsthat use magnetic materials as auxiliary tools for enhanced pathogen and virusdetections are also covered.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[391.0, 2020, ',', 7],[364.0, -19, ',', 7]

S
###Magnetic Immunoassays: A Review of Virus and Pathogen Detection Before and Amidst the Coronavirus Disease-19 (COVID-19)|Kai Wu,Renata Saha,Diqing Su,Venkatramana D. Krishna,Jinming Liu,Maxim C-J Cheeran,Jian-Ping Wang###
(1668774, 1668774)
 The goal of this review is to inform theresearchers of diagnostic and surveillance platforms for SAR<missing VAR>S-CoV-2 and theirperformances.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[468.0, 2020, ',', 8],[441.0, -19, ',', 8]

S
###Magnetic Immunoassays: A Review of Virus and Pathogen Detection Before and Amidst the Coronavirus Disease-19 (COVID-19)|Kai Wu,Renata Saha,Diqing Su,Venkatramana D. Krishna,Jinming Liu,Maxim C-J Cheeran,Jian-Ping Wang###
(1668777, 1668777)
 The goal of this review is to inform theresearchers of diagnostic and surveillance platforms for SAR<missing VAR>S-CoV-2 and theirperformances.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[471.0, 2020, ',', 8],[444.0, -19, ',', 8]

CoV
###Magnetic Immunoassays: A Review of Virus and Pathogen Detection Before and Amidst the Coronavirus Disease-19 (COVID-19)|Kai Wu,Renata Saha,Diqing Su,Venkatramana D. Krishna,Jinming Liu,Maxim C-J Cheeran,Jian-Ping Wang###
(1668779, 1668780)
 The goal of this review is to inform theresearchers of diagnostic and surveillance platforms for SAR<missing VAR>S-CoV-2 and theirperformances.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[473.0, 2020, ',', 8],[446.0, -19, ',', 8]

La1.37Sr1.63Mn2O7
###Colossal Negative Magnetoresistance Effect in A La$_{1.37}$Sr$_{1.63}$Mn$_2$O$_7$ Single Crystal Grown by Laser-Diode-Heated Floating-Zone Technique|Si Wu,Yinghao Zhu,Junchao Xia,Pengfei Zhou,Haiyong Ni,Hai-Feng Li###
(1668812, 1668819)
Colossal Negative Magnetoresistance Effect in A La1.37Sr1.63Mn2O7 Single Crystal Grown by Laser-Diode-Heated Floating-Zone Technique.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0.13583333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.11416666666666668,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 0, 'T', 3],[267.0, -91.23, '%', 6],[279.0, 128.7, 'K', 6],[301.0, 1.67, ',', 7],[304.0, 140, ',', 7],[308.0, 322, 'K', 7],[331.0, 14, 'T', 8],[334.0, 140, 'K', 8]

La1.37Sr1.63Mn2O7
###Colossal Negative Magnetoresistance Effect in A La$_{1.37}$Sr$_{1.63}$Mn$_2$O$_7$ Single Crystal Grown by Laser-Diode-Heated Floating-Zone Technique|Si Wu,Yinghao Zhu,Junchao Xia,Pengfei Zhou,Haiyong Ni,Hai-Feng Li###
(1668848, 1668855)
 We have grown La1.37Sr1.63Mn2O7 single crystals with alaser-diode-heated floating-zone furnace and studied the crystallinity,structure, and magnetoresistance (MR) effect by in-house X<missing VAR>-ray Lauediffraction, X<missing VAR>-ray powder diffraction, and resistance measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0.13583333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.11416666666666668,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 0, 'T', 2],[231.0, -91.23, '%', 5],[243.0, 128.7, 'K', 5],[265.0, 1.67, ',', 6],[268.0, 140, ',', 6],[272.0, 322, 'K', 6],[295.0, 14, 'T', 7],[298.0, 140, 'K', 7]

La1.37Sr1.63Mn2O7
###Colossal Negative Magnetoresistance Effect in A La$_{1.37}$Sr$_{1.63}$Mn$_2$O$_7$ Single Crystal Grown by Laser-Diode-Heated Floating-Zone Technique|Si Wu,Yinghao Zhu,Junchao Xia,Pengfei Zhou,Haiyong Ni,Hai-Feng Li###
(1668937, 1668944)
 TheLa1.37Sr1.63Mn2O7 single crystal crystallizes into a tetragonalstructure with space group emphI4/emphmmm at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0.13583333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.11416666666666668,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 0, 'T', 1],[142.0, -91.23, '%', 4],[154.0, 128.7, 'K', 4],[176.0, 1.67, ',', 5],[179.0, 140, ',', 5],[183.0, 322, 'K', 5],[206.0, 14, 'T', 6],[209.0, 140, 'K', 6]

I4
###Colossal Negative Magnetoresistance Effect in A La$_{1.37}$Sr$_{1.63}$Mn$_2$O$_7$ Single Crystal Grown by Laser-Diode-Heated Floating-Zone Technique|Si Wu,Yinghao Zhu,Junchao Xia,Pengfei Zhou,Haiyong Ni,Hai-Feng Li###
(1668968, 1668969)
 TheLa1.37Sr1.63Mn2O7 single crystal crystallizes into a tetragonalstructure with space group emphI4/emphmmm at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 0, 'T', 1],[117.0, -91.23, '%', 4],[129.0, 128.7, 'K', 4],[151.0, 1.67, ',', 5],[154.0, 140, ',', 5],[158.0, 322, 'K', 5],[181.0, 14, 'T', 6],[184.0, 140, 'K', 6]

At
###Colossal Negative Magnetoresistance Effect in A La$_{1.37}$Sr$_{1.63}$Mn$_2$O$_7$ Single Crystal Grown by Laser-Diode-Heated Floating-Zone Technique|Si Wu,Yinghao Zhu,Junchao Xia,Pengfei Zhou,Haiyong Ni,Hai-Feng Li###
(1668981, 1668981)
 At 0 T,the maximum resistance centers around sim166.9 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[1.0, 0, 'T', 0],[105.0, -91.23, '%', 3],[117.0, 128.7, 'K', 3],[139.0, 1.67, ',', 4],[142.0, 140, ',', 4],[146.0, 322, 'K', 4],[169.0, 14, 'T', 5],[172.0, 140, 'K', 5]

K
###Colossal Negative Magnetoresistance Effect in A La$_{1.37}$Sr$_{1.63}$Mn$_2$O$_7$ Single Crystal Grown by Laser-Diode-Heated Floating-Zone Technique|Si Wu,Yinghao Zhu,Junchao Xia,Pengfei Zhou,Haiyong Ni,Hai-Feng Li###
(1668999, 1668999)
 At 0 T,the maximum resistance centers around sim166.9 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 0, 'T', 0],[87.0, -91.23, '%', 3],[99.0, 128.7, 'K', 3],[121.0, 1.67, ',', 4],[124.0, 140, ',', 4],[128.0, 322, 'K', 4],[151.0, 14, 'T', 5],[154.0, 140, 'K', 5]

K
###Colossal Negative Magnetoresistance Effect in A La$_{1.37}$Sr$_{1.63}$Mn$_2$O$_7$ Single Crystal Grown by Laser-Diode-Heated Floating-Zone Technique|Si Wu,Yinghao Zhu,Junchao Xia,Pengfei Zhou,Haiyong Ni,Hai-Feng Li###
(1669007, 1669007)
 Below sim35.8 K, itdisplays an insulating character with an increase in resistance upon cooling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 0, 'T', 1],[79.0, -91.23, '%', 2],[91.0, 128.7, 'K', 2],[113.0, 1.67, ',', 3],[116.0, 140, ',', 3],[120.0, 322, 'K', 3],[143.0, 14, 'T', 4],[146.0, 140, 'K', 4]

B7
###Colossal Negative Magnetoresistance Effect in A La$_{1.37}$Sr$_{1.63}$Mn$_2$O$_7$ Single Crystal Grown by Laser-Diode-Heated Floating-Zone Technique|Si Wu,Yinghao Zhu,Junchao Xia,Pengfei Zhou,Haiyong Ni,Hai-Feng Li###
(1669048, 1669049)
An applied magnetic field of emphB7T<missing VAR> strongly suppresses the resistanceindicative of a negative MR effect.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 0, 'T', 2],[37.0, -91.23, '%', 1],[49.0, 128.7, 'K', 1],[71.0, 1.67, ',', 2],[74.0, 140, ',', 2],[78.0, 322, 'K', 2],[101.0, 14, 'T', 3],[104.0, 140, 'K', 3]

At
###Colossal Negative Magnetoresistance Effect in A La$_{1.37}$Sr$_{1.63}$Mn$_2$O$_7$ Single Crystal Grown by Laser-Diode-Heated Floating-Zone Technique|Si Wu,Yinghao Zhu,Junchao Xia,Pengfei Zhou,Haiyong Ni,Hai-Feng Li###
(1669149, 1669149)
At 14 T and 140 K, the colossal negative MR value is down to -94.04(5)%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 0, 'T', 5],[63.0, -91.23, '%', 2],[51.0, 128.7, 'K', 2],[29.0, 1.67, ',', 1],[26.0, 140, ',', 1],[22.0, 322, 'K', 1],[1.0, 14, 'T', 0],[4.0, 140, 'K', 0]

B
###Colossal Negative Magnetoresistance Effect in A La$_{1.37}$Sr$_{1.63}$Mn$_2$O$_7$ Single Crystal Grown by Laser-Diode-Heated Floating-Zone Technique|Si Wu,Yinghao Zhu,Junchao Xia,Pengfei Zhou,Haiyong Ni,Hai-Feng Li###
(1669230, 1669230)
 Weschematically fit the MR values with different models for an ideal describingof the interesting features of the MR value versus emphB curves.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[248.0, 0, 'T', 6],[144.0, -91.23, '%', 3],[132.0, 128.7, 'K', 3],[110.0, 1.67, ',', 2],[107.0, 140, ',', 2],[103.0, 322, 'K', 2],[80.0, 14, 'T', 1],[77.0, 140, 'K', 1]

BaAl4
###Crystalline symmetry-protected non-trivial topology in prototype compound BaAl$_4$|Kefeng Wang,Ryo Mori,Zhijun Wang,Limin Wang,Jonathan Han Son Ma,Drew W. Latzke,David E. Graf,Jonathan D. Denlinger,Daniel Campbell,B. Andrei Bernevig,Alessandra Lanzara,Johnpierre Paglione###
(1669261, 1669263)
Crystalline symmetry-protected non-trivial topology in prototype compound BaAl4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BaAl4
###Crystalline symmetry-protected non-trivial topology in prototype compound BaAl$_4$|Kefeng Wang,Ryo Mori,Zhijun Wang,Limin Wang,Jonathan Han Son Ma,Drew W. Latzke,David E. Graf,Jonathan D. Denlinger,Daniel Campbell,B. Andrei Bernevig,Alessandra Lanzara,Johnpierre Paglione###
(1669268, 1669270)
 The BaAl4 prototype crystal structure is the most populous of allstructure types, and is the building block for a diverse set of sub-structuresincluding the famous ThCr2Si2 family that hosts high-temperaturesuperconductivity and numerous magnetic and strongly correlated electronsystems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ThCr2Si2
###Crystalline symmetry-protected non-trivial topology in prototype compound BaAl$_4$|Kefeng Wang,Ryo Mori,Zhijun Wang,Limin Wang,Jonathan Han Son Ma,Drew W. Latzke,David E. Graf,Jonathan D. Denlinger,Daniel Campbell,B. Andrei Bernevig,Alessandra Lanzara,Johnpierre Paglione###
(1669327, 1669331)
 The BaAl4 prototype crystal structure is the most populous of allstructure types, and is the building block for a diverse set of sub-structuresincluding the famous ThCr2Si2 family that hosts high-temperaturesuperconductivity and numerous magnetic and strongly correlated electronsystems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr
###Crystalline symmetry-protected non-trivial topology in prototype compound BaAl$_4$|Kefeng Wang,Ryo Mori,Zhijun Wang,Limin Wang,Jonathan Han Son Ma,Drew W. Latzke,David E. Graf,Jonathan D. Denlinger,Daniel Campbell,B. Andrei Bernevig,Alessandra Lanzara,Johnpierre Paglione###
(1669378, 1669378)
 The M<missing VAR>A4 family of materials (M<missing VAR>Sr, Ba, Eu; AAl, Ga, In) themselvespresent an intriguing set of ground states including charge and spin orders,but have largely been considered as uninteresting metals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ba
###Crystalline symmetry-protected non-trivial topology in prototype compound BaAl$_4$|Kefeng Wang,Ryo Mori,Zhijun Wang,Limin Wang,Jonathan Han Son Ma,Drew W. Latzke,David E. Graf,Jonathan D. Denlinger,Daniel Campbell,B. Andrei Bernevig,Alessandra Lanzara,Johnpierre Paglione###
(1669381, 1669381)
 The M<missing VAR>A4 family of materials (M<missing VAR>Sr, Ba, Eu; AAl, Ga, In) themselvespresent an intriguing set of ground states including charge and spin orders,but have largely been considered as uninteresting metals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Eu
###Crystalline symmetry-protected non-trivial topology in prototype compound BaAl$_4$|Kefeng Wang,Ryo Mori,Zhijun Wang,Limin Wang,Jonathan Han Son Ma,Drew W. Latzke,David E. Graf,Jonathan D. Denlinger,Daniel Campbell,B. Andrei Bernevig,Alessandra Lanzara,Johnpierre Paglione###
(1669384, 1669384)
 The M<missing VAR>A4 family of materials (M<missing VAR>Sr, Ba, Eu; AAl, Ga, In) themselvespresent an intriguing set of ground states including charge and spin orders,but have largely been considered as uninteresting metals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Al
###Crystalline symmetry-protected non-trivial topology in prototype compound BaAl$_4$|Kefeng Wang,Ryo Mori,Zhijun Wang,Limin Wang,Jonathan Han Son Ma,Drew W. Latzke,David E. Graf,Jonathan D. Denlinger,Daniel Campbell,B. Andrei Bernevig,Alessandra Lanzara,Johnpierre Paglione###
(1669388, 1669388)
 The M<missing VAR>A4 family of materials (M<missing VAR>Sr, Ba, Eu; AAl, Ga, In) themselvespresent an intriguing set of ground states including charge and spin orders,but have largely been considered as uninteresting metals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###Crystalline symmetry-protected non-trivial topology in prototype compound BaAl$_4$|Kefeng Wang,Ryo Mori,Zhijun Wang,Limin Wang,Jonathan Han Son Ma,Drew W. Latzke,David E. Graf,Jonathan D. Denlinger,Daniel Campbell,B. Andrei Bernevig,Alessandra Lanzara,Johnpierre Paglione###
(1669391, 1669391)
 The M<missing VAR>A4 family of materials (M<missing VAR>Sr, Ba, Eu; AAl, Ga, In) themselvespresent an intriguing set of ground states including charge and spin orders,but have largely been considered as uninteresting metals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Crystalline symmetry-protected non-trivial topology in prototype compound BaAl$_4$|Kefeng Wang,Ryo Mori,Zhijun Wang,Limin Wang,Jonathan Han Son Ma,Drew W. Latzke,David E. Graf,Jonathan D. Denlinger,Daniel Campbell,B. Andrei Bernevig,Alessandra Lanzara,Johnpierre Paglione###
(1669394, 1669394)
 The M<missing VAR>A4 family of materials (M<missing VAR>Sr, Ba, Eu; AAl, Ga, In) themselvespresent an intriguing set of ground states including charge and spin orders,but have largely been considered as uninteresting metals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BaAl4
###Crystalline symmetry-protected non-trivial topology in prototype compound BaAl$_4$|Kefeng Wang,Ryo Mori,Zhijun Wang,Limin Wang,Jonathan Han Son Ma,Drew W. Latzke,David E. Graf,Jonathan D. Denlinger,Daniel Campbell,B. Andrei Bernevig,Alessandra Lanzara,Johnpierre Paglione###
(1669479, 1669481)
 Using electronicstructure calculations, symmetry analysis and topological quantum chemistrytechniques, we predict the exemplary compound BaAl4 to harbor athree-dimensional Dirac spectrum with non-trivial topology and possible nodallines crossing the Brillouin zone, wherein one pair of semi-Dirac points withlinear dispersion along the kz direction and quadratic dispersion along thekx/ky direction resides on the rotational axis with C4v<missing VAR> point groupsymmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C4
###Crystalline symmetry-protected non-trivial topology in prototype compound BaAl$_4$|Kefeng Wang,Ryo Mori,Zhijun Wang,Limin Wang,Jonathan Han Son Ma,Drew W. Latzke,David E. Graf,Jonathan D. Denlinger,Daniel Campbell,B. Andrei Bernevig,Alessandra Lanzara,Johnpierre Paglione###
(1669585, 1669586)
 Using electronicstructure calculations, symmetry analysis and topological quantum chemistrytechniques, we predict the exemplary compound BaAl4 to harbor athree-dimensional Dirac spectrum with non-trivial topology and possible nodallines crossing the Brillouin zone, wherein one pair of semi-Dirac points withlinear dispersion along the kz direction and quadratic dispersion along thekx/ky direction resides on the rotational axis with C4v<missing VAR> point groupsymmetry.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BaAl4
###Crystalline symmetry-protected non-trivial topology in prototype compound BaAl$_4$|Kefeng Wang,Ryo Mori,Zhijun Wang,Limin Wang,Jonathan Han Son Ma,Drew W. Latzke,David E. Graf,Jonathan D. Denlinger,Daniel Campbell,B. Andrei Bernevig,Alessandra Lanzara,Johnpierre Paglione###
(1669627, 1669629)
 Electrical transport measurements reveal the presence of an extremelylarge, unsaturating positive magnetoresistance in BaAl4 despite anuncompensated band structure, and quantum oscillations and angle-resolvedphotoemission spectroscopy measurements confirm the predicted multibandsemimetal structure with pockets of Dirac holes and a Van Hove singularity(VHS) remarkably consistent with the theoretical prediction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(VHS)
###Crystalline symmetry-protected non-trivial topology in prototype compound BaAl$_4$|Kefeng Wang,Ryo Mori,Zhijun Wang,Limin Wang,Jonathan Han Son Ma,Drew W. Latzke,David E. Graf,Jonathan D. Denlinger,Daniel Campbell,B. Andrei Bernevig,Alessandra Lanzara,Johnpierre Paglione###
(1669696, 1669700)
 Electrical transport measurements reveal the presence of an extremelylarge, unsaturating positive magnetoresistance in BaAl4 despite anuncompensated band structure, and quantum oscillations and angle-resolvedphotoemission spectroscopy measurements confirm the predicted multibandsemimetal structure with pockets of Dirac holes and a Van Hove singularity(VHS) remarkably consistent with the theoretical prediction.
Featurization successful!
0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BaAl4
###Crystalline symmetry-protected non-trivial topology in prototype compound BaAl$_4$|Kefeng Wang,Ryo Mori,Zhijun Wang,Limin Wang,Jonathan Han Son Ma,Drew W. Latzke,David E. Graf,Jonathan D. Denlinger,Daniel Campbell,B. Andrei Bernevig,Alessandra Lanzara,Johnpierre Paglione###
(1669722, 1669724)
 We thus presentBaAl4 as a new topological semimetal, casting its prototype status into anew role as building block for a vast array of new topological materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BN
###Magnetic Multilayer Edges in Bernal-Stacked Hexagonal Boron Nitride|Mehmet Dogan,Marvin L. Cohen###
(1669811, 1669812)
 Single-layer ith<missing VAR>-BN is known to have edges with unique magnetism,however, in the commonly fabricated multilayertextAAprime-ith<missing VAR>-BN, edge relaxations occur that create interlayerbonds and eliminate the unpaired electrons at the edge.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BN
###Magnetic Multilayer Edges in Bernal-Stacked Hexagonal Boron Nitride|Mehmet Dogan,Marvin L. Cohen###
(1669854, 1669855)
 Single-layer ith<missing VAR>-BN is known to have edges with unique magnetism,however, in the commonly fabricated multilayertextAAprime-ith<missing VAR>-BN, edge relaxations occur that create interlayerbonds and eliminate the unpaired electrons at the edge.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BN
###Magnetic Multilayer Edges in Bernal-Stacked Hexagonal Boron Nitride|Mehmet Dogan,Marvin L. Cohen###
(1669915, 1669916)
 Recently, a robustmethod of growing the unconventional Bernal-stacked ith<missing VAR>-BN(AB-ith<missing VAR>-BN) has been reported.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Magnetic Multilayer Edges in Bernal-Stacked Hexagonal Boron Nitride|Mehmet Dogan,Marvin L. Cohen###
(1669921, 1669921)
 Recently, a robustmethod of growing the unconventional Bernal-stacked ith<missing VAR>-BN(AB-ith<missing VAR>-BN) has been reported.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Magnetic Multilayer Edges in Bernal-Stacked Hexagonal Boron Nitride|Mehmet Dogan,Marvin L. Cohen###
(1669927, 1669927)
 Recently, a robustmethod of growing the unconventional Bernal-stacked ith<missing VAR>-BN(AB-ith<missing VAR>-BN) has been reported.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Magnetic Multilayer Edges in Bernal-Stacked Hexagonal Boron Nitride|Mehmet Dogan,Marvin L. Cohen###
(1669966, 1669966)
 Here, we use theoretical approaches toinvestigate the nitrogen-terminated zigzag edges in AB-ith<missing VAR>-BN that can beformed in a controlled fashion using a high-energy electron beam.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BN
###Magnetic Multilayer Edges in Bernal-Stacked Hexagonal Boron Nitride|Mehmet Dogan,Marvin L. Cohen###
(1669971, 1669972)
 Here, we use theoretical approaches toinvestigate the nitrogen-terminated zigzag edges in AB-ith<missing VAR>-BN that can beformed in a controlled fashion using a high-energy electron beam.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Magnetic Multilayer Edges in Bernal-Stacked Hexagonal Boron Nitride|Mehmet Dogan,Marvin L. Cohen###
(1670030, 1670030)
 We find thatthese open edges remain intact in bilayer and multilayer AB-ith<missing VAR>-BN,enabling researchers potentially to investigate these edge statesexperimentally.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BN
###Magnetic Multilayer Edges in Bernal-Stacked Hexagonal Boron Nitride|Mehmet Dogan,Marvin L. Cohen###
(1670035, 1670036)
 We find thatthese open edges remain intact in bilayer and multilayer AB-ith<missing VAR>-BN,enabling researchers potentially to investigate these edge statesexperimentally.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N2
###Magnetic Multilayer Edges in Bernal-Stacked Hexagonal Boron Nitride|Mehmet Dogan,Marvin L. Cohen###
(1670210, 1670211)
 By solving thismodel using Monte Carlo simulations, we can determine nm-scale correlationlengths at liquid-N2 temperatures and lower.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Magnetic Multilayer Edges in Bernal-Stacked Hexagonal Boron Nitride|Mehmet Dogan,Marvin L. Cohen###
(1670220, 1670220)
 At low temperatures, theseedges may be utilized in magnetoresistance and spintronics applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CeRhSi3
###Pressure induced superconductivity in a CeRhSi$_{3}$ single crystal -- the high pressure study|Daniel Staško,Jaroslav Valenta,Marie Kratochvílová,Jiří Prchal,Petr Proschek,Milan Klicpera###
(1670267, 1670270)
Pressure induced superconductivity in a CeRhSi3 single crystal -- the high pressure study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 15, 'years', 1],[118.0, 3, 'GPa', 2],[206.0, 0.4, 'K', 4],[209.0, 1.1, 'GPa', 4],[212.0, 1.1, 'K', 4],[215.0, 2.4, 'GPa', 4],[246.0, 3.0, 'GPa', 4],[289.0, 4.5, 'and', 5],[290.0, 5.0, 'GPa', 5],[346.0, 19, 'T', 6],[349.0, 0.6, 'K', 6],[352.0, 2.4, 'GPa', 6]

CeRhSi3
###Pressure induced superconductivity in a CeRhSi$_{3}$ single crystal -- the high pressure study|Daniel Staško,Jaroslav Valenta,Marie Kratochvílová,Jiří Prchal,Petr Proschek,Milan Klicpera###
(1670300, 1670303)
 Pressure induced superconductivity in non-centrosymmetric CeRhSi3 andCeIrSi3 compounds has attracted significant attention of the scientificcommunity since its discovery 15 years ago.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 15, 'years', 0],[85.0, 3, 'GPa', 1],[173.0, 0.4, 'K', 3],[176.0, 1.1, 'GPa', 3],[179.0, 1.1, 'K', 3],[182.0, 2.4, 'GPa', 3],[213.0, 3.0, 'GPa', 3],[256.0, 4.5, 'and', 4],[257.0, 5.0, 'GPa', 4],[313.0, 19, 'T', 5],[316.0, 0.6, 'K', 5],[319.0, 2.4, 'GPa', 5]

CeIrSi3
###Pressure induced superconductivity in a CeRhSi$_{3}$ single crystal -- the high pressure study|Daniel Staško,Jaroslav Valenta,Marie Kratochvílová,Jiří Prchal,Petr Proschek,Milan Klicpera###
(1670308, 1670311)
 Pressure induced superconductivity in non-centrosymmetric CeRhSi3 andCeIrSi3 compounds has attracted significant attention of the scientificcommunity since its discovery 15 years ago.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 15, 'years', 0],[77.0, 3, 'GPa', 1],[165.0, 0.4, 'K', 3],[168.0, 1.1, 'GPa', 3],[171.0, 1.1, 'K', 3],[174.0, 2.4, 'GPa', 3],[205.0, 3.0, 'GPa', 3],[248.0, 4.5, 'and', 4],[249.0, 5.0, 'GPa', 4],[305.0, 19, 'T', 5],[308.0, 0.6, 'K', 5],[311.0, 2.4, 'GPa', 5]

CeRhSi3
###Pressure induced superconductivity in a CeRhSi$_{3}$ single crystal -- the high pressure study|Daniel Staško,Jaroslav Valenta,Marie Kratochvílová,Jiří Prchal,Petr Proschek,Milan Klicpera###
(1670435, 1670438)
 Present studyfocuses on the superconducting state at higher, so far unreported, pressuresusing the Bridgman anvil cell and a CeRhSi3 single crystal synthesized bythe Sn-true-flux method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 15, 'years', 2],[47.0, 3, 'GPa', 1],[38.0, 0.4, 'K', 1],[41.0, 1.1, 'GPa', 1],[44.0, 1.1, 'K', 1],[47.0, 2.4, 'GPa', 1],[78.0, 3.0, 'GPa', 1],[121.0, 4.5, 'and', 2],[122.0, 5.0, 'GPa', 2],[178.0, 19, 'T', 3],[181.0, 0.6, 'K', 3],[184.0, 2.4, 'GPa', 3]

Sn
###Pressure induced superconductivity in a CeRhSi$_{3}$ single crystal -- the high pressure study|Daniel Staško,Jaroslav Valenta,Marie Kratochvílová,Jiří Prchal,Petr Proschek,Milan Klicpera###
(1670451, 1670451)
 Present studyfocuses on the superconducting state at higher, so far unreported, pressuresusing the Bridgman anvil cell and a CeRhSi3 single crystal synthesized bythe Sn-true-flux method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 15, 'years', 2],[63.0, 3, 'GPa', 1],[25.0, 0.4, 'K', 1],[28.0, 1.1, 'GPa', 1],[31.0, 1.1, 'K', 1],[34.0, 2.4, 'GPa', 1],[65.0, 3.0, 'GPa', 1],[108.0, 4.5, 'and', 2],[109.0, 5.0, 'GPa', 2],[165.0, 19, 'T', 3],[168.0, 0.6, 'K', 3],[171.0, 2.4, 'GPa', 3]

SC
###Pressure induced superconductivity in a CeRhSi$_{3}$ single crystal -- the high pressure study|Daniel Staško,Jaroslav Valenta,Marie Kratochvílová,Jiří Prchal,Petr Proschek,Milan Klicpera###
(1670502, 1670503)
 The initial increase of superconducting criticaltemperature from 0.4 K at 1.1 GPa to 1.1 K at 2.4 GPa is followed by a gradualsuppression of SC state upon increasing the pressure above 3.0 GPa, forming atypical dome.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 15, 'years', 3],[114.0, 3, 'GPa', 2],[26.0, 0.4, 'K', 0],[23.0, 1.1, 'GPa', 0],[20.0, 1.1, 'K', 0],[17.0, 2.4, 'GPa', 0],[13.0, 3.0, 'GPa', 0],[56.0, 4.5, 'and', 1],[57.0, 5.0, 'GPa', 1],[113.0, 19, 'T', 2],[116.0, 0.6, 'K', 2],[119.0, 2.4, 'GPa', 2]

H
###Pressure induced superconductivity in a CeRhSi$_{3}$ single crystal -- the high pressure study|Daniel Staško,Jaroslav Valenta,Marie Kratochvílová,Jiří Prchal,Petr Proschek,Milan Klicpera###
(1670654, 1670654)
 The previously reported itT-p anditH-T<missing VAR> phase diagrams are completed by our high-pressure data and discussedin the frame of previous results.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[317.0, 15, 'years', 6],[266.0, 3, 'GPa', 5],[178.0, 0.4, 'K', 3],[175.0, 1.1, 'GPa', 3],[172.0, 1.1, 'K', 3],[169.0, 2.4, 'GPa', 3],[138.0, 3.0, 'GPa', 3],[95.0, 4.5, 'and', 2],[94.0, 5.0, 'GPa', 2],[38.0, 19, 'T', 1],[35.0, 0.6, 'K', 1],[32.0, 2.4, 'GPa', 1]

MgO
###Giant perpendicular magnetic anisotropy enhancement in MgO-based magnetic tunnel junction by using Co/Fe composite layer|Libor Vojáček,Fatima Ibrahim,Ali Hallal,Bernard Dieny,Mairbek Chshiev###
(1670714, 1670715)
Giant perpendicular magnetic anisotropy enhancement in MgO-based magnetic tunnel junction by using Co/Fe composite layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[200.0, 2, ',', 2]

Co/Fe
###Giant perpendicular magnetic anisotropy enhancement in MgO-based magnetic tunnel junction by using Co/Fe composite layer|Libor Vojáček,Fatima Ibrahim,Ali Hallal,Bernard Dieny,Mairbek Chshiev###
(1670729, 1670731)
Giant perpendicular magnetic anisotropy enhancement in MgO-based magnetic tunnel junction by using Co/Fe composite layer.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[184.0, 2, ',', 2]

S
###Giant perpendicular magnetic anisotropy enhancement in MgO-based magnetic tunnel junction by using Co/Fe composite layer|Libor Vojáček,Fatima Ibrahim,Ali Hallal,Bernard Dieny,Mairbek Chshiev###
(1670776, 1670776)
 Magnetic tunnel junctions with perpendicular anisotropy form the basis of thespin-transfer torque magnetic random-access memory (STT-MRAM), which isnon-volatile, fast, dense, and has quasi-infinite write endurance and low powerconsumption.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 2, ',', 1]

Fe
###Giant perpendicular magnetic anisotropy enhancement in MgO-based magnetic tunnel junction by using Co/Fe composite layer|Libor Vojáček,Fatima Ibrahim,Ali Hallal,Bernard Dieny,Mairbek Chshiev###
(1670866, 1670866)
 Based on density functional theory (DFT) calculations, we proposean alternative design of magnetic tunnel junctions comprisingFe(n)Co(m)Fe(n)/MgO storage layers with greatly enhanced perpendicular magneticanisotropy (PM<missing VAR>A) up to several mJ/m<missing VAR>2, leveraging the interfacial perpendicularanisotropy of Fe/MgO along with a stress-induced bulk PM<missing VAR>A discovered within bccCo.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 2, ',', 0]

Co
###Giant perpendicular magnetic anisotropy enhancement in MgO-based magnetic tunnel junction by using Co/Fe composite layer|Libor Vojáček,Fatima Ibrahim,Ali Hallal,Bernard Dieny,Mairbek Chshiev###
(1670870, 1670870)
 Based on density functional theory (DFT) calculations, we proposean alternative design of magnetic tunnel junctions comprisingFe(n)Co(m)Fe(n)/MgO storage layers with greatly enhanced perpendicular magneticanisotropy (PM<missing VAR>A) up to several mJ/m<missing VAR>2, leveraging the interfacial perpendicularanisotropy of Fe/MgO along with a stress-induced bulk PM<missing VAR>A discovered within bccCo.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 2, ',', 0]

Fe
###Giant perpendicular magnetic anisotropy enhancement in MgO-based magnetic tunnel junction by using Co/Fe composite layer|Libor Vojáček,Fatima Ibrahim,Ali Hallal,Bernard Dieny,Mairbek Chshiev###
(1670874, 1670874)
 Based on density functional theory (DFT) calculations, we proposean alternative design of magnetic tunnel junctions comprisingFe(n)Co(m)Fe(n)/MgO storage layers with greatly enhanced perpendicular magneticanisotropy (PM<missing VAR>A) up to several mJ/m<missing VAR>2, leveraging the interfacial perpendicularanisotropy of Fe/MgO along with a stress-induced bulk PM<missing VAR>A discovered within bccCo.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 2, ',', 0]

MgO
###Giant perpendicular magnetic anisotropy enhancement in MgO-based magnetic tunnel junction by using Co/Fe composite layer|Libor Vojáček,Fatima Ibrahim,Ali Hallal,Bernard Dieny,Mairbek Chshiev###
(1670879, 1670880)
 Based on density functional theory (DFT) calculations, we proposean alternative design of magnetic tunnel junctions comprisingFe(n)Co(m)Fe(n)/MgO storage layers with greatly enhanced perpendicular magneticanisotropy (PM<missing VAR>A) up to several mJ/m<missing VAR>2, leveraging the interfacial perpendicularanisotropy of Fe/MgO along with a stress-induced bulk PM<missing VAR>A discovered within bccCo.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 2, ',', 0]

P
###Giant perpendicular magnetic anisotropy enhancement in MgO-based magnetic tunnel junction by using Co/Fe composite layer|Libor Vojáček,Fatima Ibrahim,Ali Hallal,Bernard Dieny,Mairbek Chshiev###
(1670900, 1670900)
 Based on density functional theory (DFT) calculations, we proposean alternative design of magnetic tunnel junctions comprisingFe(n)Co(m)Fe(n)/MgO storage layers with greatly enhanced perpendicular magneticanisotropy (PM<missing VAR>A) up to several mJ/m<missing VAR>2, leveraging the interfacial perpendicularanisotropy of Fe/MgO along with a stress-induced bulk PM<missing VAR>A discovered within bccCo.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 2, ',', 0]

Fe/MgO
###Giant perpendicular magnetic anisotropy enhancement in MgO-based magnetic tunnel junction by using Co/Fe composite layer|Libor Vojáček,Fatima Ibrahim,Ali Hallal,Bernard Dieny,Mairbek Chshiev###
(1670931, 1670934)
 Based on density functional theory (DFT) calculations, we proposean alternative design of magnetic tunnel junctions comprisingFe(n)Co(m)Fe(n)/MgO storage layers with greatly enhanced perpendicular magneticanisotropy (PM<missing VAR>A) up to several mJ/m<missing VAR>2, leveraging the interfacial perpendicularanisotropy of Fe/MgO along with a stress-induced bulk PM<missing VAR>A discovered within bccCo.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[16.0, 2, ',', 0]

P
###Giant perpendicular magnetic anisotropy enhancement in MgO-based magnetic tunnel junction by using Co/Fe composite layer|Libor Vojáček,Fatima Ibrahim,Ali Hallal,Bernard Dieny,Mairbek Chshiev###
(1670948, 1670948)
 Based on density functional theory (DFT) calculations, we proposean alternative design of magnetic tunnel junctions comprisingFe(n)Co(m)Fe(n)/MgO storage layers with greatly enhanced perpendicular magneticanisotropy (PM<missing VAR>A) up to several mJ/m<missing VAR>2, leveraging the interfacial perpendicularanisotropy of Fe/MgO along with a stress-induced bulk PM<missing VAR>A discovered within bccCo.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 2, ',', 0]

Co
###Giant perpendicular magnetic anisotropy enhancement in MgO-based magnetic tunnel junction by using Co/Fe composite layer|Libor Vojáček,Fatima Ibrahim,Ali Hallal,Bernard Dieny,Mairbek Chshiev###
(1670959, 1670959)
 Based on density functional theory (DFT) calculations, we proposean alternative design of magnetic tunnel junctions comprisingFe(n)Co(m)Fe(n)/MgO storage layers with greatly enhanced perpendicular magneticanisotropy (PM<missing VAR>A) up to several mJ/m<missing VAR>2, leveraging the interfacial perpendicularanisotropy of Fe/MgO along with a stress-induced bulk PM<missing VAR>A discovered within bccCo.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 2, ',', 0]

Fe/MgO
###Giant perpendicular magnetic anisotropy enhancement in MgO-based magnetic tunnel junction by using Co/Fe composite layer|Libor Vojáček,Fatima Ibrahim,Ali Hallal,Bernard Dieny,Mairbek Chshiev###
(1671025, 1671028)
 The tunneling magnetoresistance (TMR) estimated from theJulliere model is comparable with that of the pure Fe/MgO case.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[110.0, 2, ',', 2]

MgO
###Giant perpendicular magnetic anisotropy enhancement in MgO-based magnetic tunnel junction by using Co/Fe composite layer|Libor Vojáček,Fatima Ibrahim,Ali Hallal,Bernard Dieny,Mairbek Chshiev###
(1671098, 1671099)
 We discuss theadvantages and pitfalls of a real-life fabrication of the structure and proposethe Fe(3ML)Co(4ML)Fe(3ML) as a storage layer for MgO-based STT-MRAM<missing VAR> cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[183.0, 2, ',', 3]

S
###Giant perpendicular magnetic anisotropy enhancement in MgO-based magnetic tunnel junction by using Co/Fe composite layer|Libor Vojáček,Fatima Ibrahim,Ali Hallal,Bernard Dieny,Mairbek Chshiev###
(1671103, 1671103)
 We discuss theadvantages and pitfalls of a real-life fabrication of the structure and proposethe Fe(3ML)Co(4ML)Fe(3ML) as a storage layer for MgO-based STT-MRAM<missing VAR> cells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 2, ',', 3]

P
###Giant perpendicular magnetic anisotropy enhancement in MgO-based magnetic tunnel junction by using Co/Fe composite layer|Libor Vojáček,Fatima Ibrahim,Ali Hallal,Bernard Dieny,Mairbek Chshiev###
(1671120, 1671120)
 Thelarge PM<missing VAR>A in strained bcc Co is explained in the framework of Brunos<missing VAR> model bythe MgO-imposed strain and consequent changes in the energies of dyz and dz2minority-spin bands.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, 2, ',', 4]

Co
###Giant perpendicular magnetic anisotropy enhancement in MgO-based magnetic tunnel junction by using Co/Fe composite layer|Libor Vojáček,Fatima Ibrahim,Ali Hallal,Bernard Dieny,Mairbek Chshiev###
(1671130, 1671130)
 Thelarge PM<missing VAR>A in strained bcc Co is explained in the framework of Brunos<missing VAR> model bythe MgO-imposed strain and consequent changes in the energies of dyz and dz2minority-spin bands.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[215.0, 2, ',', 4]

MgO
###Giant perpendicular magnetic anisotropy enhancement in MgO-based magnetic tunnel junction by using Co/Fe composite layer|Libor Vojáček,Fatima Ibrahim,Ali Hallal,Bernard Dieny,Mairbek Chshiev###
(1671154, 1671155)
 Thelarge PM<missing VAR>A in strained bcc Co is explained in the framework of Brunos<missing VAR> model bythe MgO-imposed strain and consequent changes in the energies of dyz and dz2minority-spin bands.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[239.0, 2, ',', 4]

S
###Paramagnetic spin Hall magnetoresistance|Koichi Oyanagi,Juan M. Gomez-Perez,Xian-Peng Zhang,Takashi Kikkawa,Yao Chen,Edurne Sagasta,Andrey Chuvilin,Luis E. Hueso,Vitaly N. Golovach,F. Sebastian Bergeret,Fèlix Casanova,Eiji Saitoh###
(1671214, 1671214)
 Spin Hall magnetoresistance (SMR) refers to a resistance change in a metallicfilm reflecting the magnetization direction of a magnet attached to the film.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Paramagnetic spin Hall magnetoresistance|Koichi Oyanagi,Juan M. Gomez-Perez,Xian-Peng Zhang,Takashi Kikkawa,Yao Chen,Edurne Sagasta,Andrey Chuvilin,Luis E. Hueso,Vitaly N. Golovach,F. Sebastian Bergeret,Fèlix Casanova,Eiji Saitoh###
(1671298, 1671298)
 SMR has been used to read outinformation written in a small magnet and to detect magnetization dynamics, butit has been limited to magnets; magnetic ordered phases or instability ofmagnetic phase transition has been believed to be indispensable.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Paramagnetic spin Hall magnetoresistance|Koichi Oyanagi,Juan M. Gomez-Perez,Xian-Peng Zhang,Takashi Kikkawa,Yao Chen,Edurne Sagasta,Andrey Chuvilin,Luis E. Hueso,Vitaly N. Golovach,F. Sebastian Bergeret,Fèlix Casanova,Eiji Saitoh###
(1671400, 1671400)
 Here, wereport the observation of SMR in a paramagnetic insulatorGd3Ga5O12 (GGG) without spontaneous magnetization combined witha Pt film.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Gd3Ga5O12
###Paramagnetic spin Hall magnetoresistance|Koichi Oyanagi,Juan M. Gomez-Perez,Xian-Peng Zhang,Takashi Kikkawa,Yao Chen,Edurne Sagasta,Andrey Chuvilin,Luis E. Hueso,Vitaly N. Golovach,F. Sebastian Bergeret,Fèlix Casanova,Eiji Saitoh###
(1671413, 1671418)
 Here, wereport the observation of SMR in a paramagnetic insulatorGd3Ga5O12 (GGG) without spontaneous magnetization combined witha Pt film.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Paramagnetic spin Hall magnetoresistance|Koichi Oyanagi,Juan M. Gomez-Perez,Xian-Peng Zhang,Takashi Kikkawa,Yao Chen,Edurne Sagasta,Andrey Chuvilin,Luis E. Hueso,Vitaly N. Golovach,F. Sebastian Bergeret,Fèlix Casanova,Eiji Saitoh###
(1671439, 1671439)
 Here, wereport the observation of SMR in a paramagnetic insulatorGd3Ga5O12 (GGG) without spontaneous magnetization combined witha Pt film.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Paramagnetic spin Hall magnetoresistance|Koichi Oyanagi,Juan M. Gomez-Perez,Xian-Peng Zhang,Takashi Kikkawa,Yao Chen,Edurne Sagasta,Andrey Chuvilin,Luis E. Hueso,Vitaly N. Golovach,F. Sebastian Bergeret,Fèlix Casanova,Eiji Saitoh###
(1671448, 1671448)
 The paramagnetic SMR can be attributed to spin-transfer torqueacting on localized spins in GGG.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Paramagnetic spin Hall magnetoresistance|Koichi Oyanagi,Juan M. Gomez-Perez,Xian-Peng Zhang,Takashi Kikkawa,Yao Chen,Edurne Sagasta,Andrey Chuvilin,Luis E. Hueso,Vitaly N. Golovach,F. Sebastian Bergeret,Fèlix Casanova,Eiji Saitoh###
(1671509, 1671509)
 We determine the efficiencies of spin torqueand spin-flip scattering at the Pt/GGG interface, and demonstrate thesequantities can be tuned with external magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

IrO6
###Stabilization of a honeycomb lattice of IrO$_6$ octahedra in superlattices with ilmenite-type MnTiO$_3$|Kei Miura,Kohei Fujiwara,Kei Nakayama,Ryo Ishikawa,Naoya Shibata,Atsushi Tsukazaki###
(1671623, 1671625)
Stabilization of a honeycomb lattice of IrO6 octahedra in superlattices with ilmenite-type MnTiO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnTiO3
###Stabilization of a honeycomb lattice of IrO$_6$ octahedra in superlattices with ilmenite-type MnTiO$_3$|Kei Miura,Kohei Fujiwara,Kei Nakayama,Ryo Ishikawa,Naoya Shibata,Atsushi Tsukazaki###
(1671639, 1671642)
Stabilization of a honeycomb lattice of IrO6 octahedra in superlattices with ilmenite-type MnTiO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Stabilization of a honeycomb lattice of IrO$_6$ octahedra in superlattices with ilmenite-type MnTiO$_3$|Kei Miura,Kohei Fujiwara,Kei Nakayama,Ryo Ishikawa,Naoya Shibata,Atsushi Tsukazaki###
(1671645, 1671645)
 In the quest for quantum spin liquids, thin films are expected to open theway for the control of intricate magnetic interactions in actual materials byexploiting epitaxial strain and two-dimensionality.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Stabilization of a honeycomb lattice of IrO$_6$ octahedra in superlattices with ilmenite-type MnTiO$_3$|Kei Miura,Kohei Fujiwara,Kei Nakayama,Ryo Ishikawa,Naoya Shibata,Atsushi Tsukazaki###
(1671743, 1671743)
 As a promising candidate towards the materialization of quantumspin liquids in thin films, we here present a robust ilmenite-type oxide with ahoneycomb lattice of edge-sharing IrO6 octahedra artificially stabilized bysuperlattice formation with an ilmenite-type antiferromagnetic oxide MnTiO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

IrO6
###Stabilization of a honeycomb lattice of IrO$_6$ octahedra in superlattices with ilmenite-type MnTiO$_3$|Kei Miura,Kohei Fujiwara,Kei Nakayama,Ryo Ishikawa,Naoya Shibata,Atsushi Tsukazaki###
(1671804, 1671806)
 As a promising candidate towards the materialization of quantumspin liquids in thin films, we here present a robust ilmenite-type oxide with ahoneycomb lattice of edge-sharing IrO6 octahedra artificially stabilized bysuperlattice formation with an ilmenite-type antiferromagnetic oxide MnTiO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnTiO3
###Stabilization of a honeycomb lattice of IrO$_6$ octahedra in superlattices with ilmenite-type MnTiO$_3$|Kei Miura,Kohei Fujiwara,Kei Nakayama,Ryo Ishikawa,Naoya Shibata,Atsushi Tsukazaki###
(1671833, 1671836)
 As a promising candidate towards the materialization of quantumspin liquids in thin films, we here present a robust ilmenite-type oxide with ahoneycomb lattice of edge-sharing IrO6 octahedra artificially stabilized bysuperlattice formation with an ilmenite-type antiferromagnetic oxide MnTiO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Stabilization of a honeycomb lattice of IrO$_6$ octahedra in superlattices with ilmenite-type MnTiO$_3$|Kei Miura,Kohei Fujiwara,Kei Nakayama,Ryo Ishikawa,Naoya Shibata,Atsushi Tsukazaki###
(1671852, 1671852)
The stabilized sub-unit-cell-thick Mn-Ir-O layer is isostructural to MnTiO3,having the atomic arrangement corresponding to ilmenite-type MnTiO3 notdiscovered yet.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ir
###Stabilization of a honeycomb lattice of IrO$_6$ octahedra in superlattices with ilmenite-type MnTiO$_3$|Kei Miura,Kohei Fujiwara,Kei Nakayama,Ryo Ishikawa,Naoya Shibata,Atsushi Tsukazaki###
(1671854, 1671854)
The stabilized sub-unit-cell-thick Mn-Ir-O layer is isostructural to MnTiO3,having the atomic arrangement corresponding to ilmenite-type MnTiO3 notdiscovered yet.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Stabilization of a honeycomb lattice of IrO$_6$ octahedra in superlattices with ilmenite-type MnTiO$_3$|Kei Miura,Kohei Fujiwara,Kei Nakayama,Ryo Ishikawa,Naoya Shibata,Atsushi Tsukazaki###
(1671856, 1671856)
The stabilized sub-unit-cell-thick Mn-Ir-O layer is isostructural to MnTiO3,having the atomic arrangement corresponding to ilmenite-type MnTiO3 notdiscovered yet.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnTiO3
###Stabilization of a honeycomb lattice of IrO$_6$ octahedra in superlattices with ilmenite-type MnTiO$_3$|Kei Miura,Kohei Fujiwara,Kei Nakayama,Ryo Ishikawa,Naoya Shibata,Atsushi Tsukazaki###
(1671866, 1671869)
The stabilized sub-unit-cell-thick Mn-Ir-O layer is isostructural to MnTiO3,having the atomic arrangement corresponding to ilmenite-type MnTiO3 notdiscovered yet.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnTiO3
###Stabilization of a honeycomb lattice of IrO$_6$ octahedra in superlattices with ilmenite-type MnTiO$_3$|Kei Miura,Kohei Fujiwara,Kei Nakayama,Ryo Ishikawa,Naoya Shibata,Atsushi Tsukazaki###
(1671889, 1671892)
The stabilized sub-unit-cell-thick Mn-Ir-O layer is isostructural to MnTiO3,having the atomic arrangement corresponding to ilmenite-type MnTiO3 notdiscovered yet.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Stabilization of a honeycomb lattice of IrO$_6$ octahedra in superlattices with ilmenite-type MnTiO$_3$|Kei Miura,Kohei Fujiwara,Kei Nakayama,Ryo Ishikawa,Naoya Shibata,Atsushi Tsukazaki###
(1671930, 1671930)
 By spin Hall magnetoresistance measurements, we found thatantiferromagnetic ordering in the ilmenite Mn sublattice is suppressed bymodified magnetic interactions in the MnO6 planes via the IrO6 planes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnO6
###Stabilization of a honeycomb lattice of IrO$_6$ octahedra in superlattices with ilmenite-type MnTiO$_3$|Kei Miura,Kohei Fujiwara,Kei Nakayama,Ryo Ishikawa,Naoya Shibata,Atsushi Tsukazaki###
(1671951, 1671953)
 By spin Hall magnetoresistance measurements, we found thatantiferromagnetic ordering in the ilmenite Mn sublattice is suppressed bymodified magnetic interactions in the MnO6 planes via the IrO6 planes.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

IrO6
###Stabilization of a honeycomb lattice of IrO$_6$ octahedra in superlattices with ilmenite-type MnTiO$_3$|Kei Miura,Kohei Fujiwara,Kei Nakayama,Ryo Ishikawa,Naoya Shibata,Atsushi Tsukazaki###
(1671961, 1671963)
 By spin Hall magnetoresistance measurements, we found thatantiferromagnetic ordering in the ilmenite Mn sublattice is suppressed bymodified magnetic interactions in the MnO6 planes via the IrO6 planes.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BaCu2As2
###Novel polymorphic phase of BaCu2As2: impact of flux for new phase formation in crystal growth|Hanlin Wu,Sheng Li,Zheng Wu,Xiqu Wang,Gareth A. Ofenstein,Sunah Kwon,Moon J. Kim,Paul C. W. Chu,Bing Lv###
(1672043, 1672047)
Novel polymorphic phase of BaCu2As2 impact of flux for new phase formation in crystal growth.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[405.0, 22, '%', 5],[409.0, 5, 'K', 5],[423.0, 7, 'T', 5]

In
###Novel polymorphic phase of BaCu2As2: impact of flux for new phase formation in crystal growth|Hanlin Wu,Sheng Li,Zheng Wu,Xiqu Wang,Gareth A. Ofenstein,Sunah Kwon,Moon J. Kim,Paul C. W. Chu,Bing Lv###
(1672070, 1672070)
 In this work, we have thoroughly studied the effects of flux composition andtemperature on the crystal growth of the BaCu2As2 compound.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[382.0, 22, '%', 4],[386.0, 5, 'K', 4],[400.0, 7, 'T', 4]

BaCu2As2
###Novel polymorphic phase of BaCu2As2: impact of flux for new phase formation in crystal growth|Hanlin Wu,Sheng Li,Zheng Wu,Xiqu Wang,Gareth A. Ofenstein,Sunah Kwon,Moon J. Kim,Paul C. W. Chu,Bing Lv###
(1672112, 1672116)
 In this work, we have thoroughly studied the effects of flux composition andtemperature on the crystal growth of the BaCu2As2 compound.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[336.0, 22, '%', 4],[340.0, 5, 'K', 4],[354.0, 7, 'T', 4]

Pb
###Novel polymorphic phase of BaCu2As2: impact of flux for new phase formation in crystal growth|Hanlin Wu,Sheng Li,Zheng Wu,Xiqu Wang,Gareth A. Ofenstein,Sunah Kwon,Moon J. Kim,Paul C. W. Chu,Bing Lv###
(1672123, 1672123)
 While Pb and CuAsself-flux produce the well-known alpha-phase ThCr2Si2-type structure (Z<missing VAR>2),a new polymorphic phase of BaCu2As2 (b<missing VAR>eta phase) with a much larger c<missing VAR>lattice parameter (Z<missing VAR>10), which could be considered an intergrowth of theThCr2Si2- and CaBe2Ge2-type structures, has been discovered via Sn flux growth.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[329.0, 22, '%', 3],[333.0, 5, 'K', 3],[347.0, 7, 'T', 3]

CuAs
###Novel polymorphic phase of BaCu2As2: impact of flux for new phase formation in crystal growth|Hanlin Wu,Sheng Li,Zheng Wu,Xiqu Wang,Gareth A. Ofenstein,Sunah Kwon,Moon J. Kim,Paul C. W. Chu,Bing Lv###
(1672127, 1672128)
 While Pb and CuAsself-flux produce the well-known alpha-phase ThCr2Si2-type structure (Z<missing VAR>2),a new polymorphic phase of BaCu2As2 (b<missing VAR>eta phase) with a much larger c<missing VAR>lattice parameter (Z<missing VAR>10), which could be considered an intergrowth of theThCr2Si2- and CaBe2Ge2-type structures, has been discovered via Sn flux growth.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[324.0, 22, '%', 3],[328.0, 5, 'K', 3],[342.0, 7, 'T', 3]

ThCr2Si2
###Novel polymorphic phase of BaCu2As2: impact of flux for new phase formation in crystal growth|Hanlin Wu,Sheng Li,Zheng Wu,Xiqu Wang,Gareth A. Ofenstein,Sunah Kwon,Moon J. Kim,Paul C. W. Chu,Bing Lv###
(1672147, 1672151)
 While Pb and CuAsself-flux produce the well-known alpha-phase ThCr2Si2-type structure (Z<missing VAR>2),a new polymorphic phase of BaCu2As2 (b<missing VAR>eta phase) with a much larger c<missing VAR>lattice parameter (Z<missing VAR>10), which could be considered an intergrowth of theThCr2Si2- and CaBe2Ge2-type structures, has been discovered via Sn flux growth.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0
[301.0, 22, '%', 3],[305.0, 5, 'K', 3],[319.0, 7, 'T', 3]

BaCu2As2
###Novel polymorphic phase of BaCu2As2: impact of flux for new phase formation in crystal growth|Hanlin Wu,Sheng Li,Zheng Wu,Xiqu Wang,Gareth A. Ofenstein,Sunah Kwon,Moon J. Kim,Paul C. W. Chu,Bing Lv###
(1672174, 1672178)
 While Pb and CuAsself-flux produce the well-known alpha-phase ThCr2Si2-type structure (Z<missing VAR>2),a new polymorphic phase of BaCu2As2 (b<missing VAR>eta phase) with a much larger c<missing VAR>lattice parameter (Z<missing VAR>10), which could be considered an intergrowth of theThCr2Si2- and CaBe2Ge2-type structures, has been discovered via Sn flux growth.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[274.0, 22, '%', 3],[278.0, 5, 'K', 3],[292.0, 7, 'T', 3]

ThCr2Si2
###Novel polymorphic phase of BaCu2As2: impact of flux for new phase formation in crystal growth|Hanlin Wu,Sheng Li,Zheng Wu,Xiqu Wang,Gareth A. Ofenstein,Sunah Kwon,Moon J. Kim,Paul C. W. Chu,Bing Lv###
(1672225, 1672229)
 While Pb and CuAsself-flux produce the well-known alpha-phase ThCr2Si2-type structure (Z<missing VAR>2),a new polymorphic phase of BaCu2As2 (b<missing VAR>eta phase) with a much larger c<missing VAR>lattice parameter (Z<missing VAR>10), which could be considered an intergrowth of theThCr2Si2- and CaBe2Ge2-type structures, has been discovered via Sn flux growth.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0
[223.0, 22, '%', 3],[227.0, 5, 'K', 3],[241.0, 7, 'T', 3]

CaBe2Ge2
###Novel polymorphic phase of BaCu2As2: impact of flux for new phase formation in crystal growth|Hanlin Wu,Sheng Li,Zheng Wu,Xiqu Wang,Gareth A. Ofenstein,Sunah Kwon,Moon J. Kim,Paul C. W. Chu,Bing Lv###
(1672234, 1672238)
 While Pb and CuAsself-flux produce the well-known alpha-phase ThCr2Si2-type structure (Z<missing VAR>2),a new polymorphic phase of BaCu2As2 (b<missing VAR>eta phase) with a much larger c<missing VAR>lattice parameter (Z<missing VAR>10), which could be considered an intergrowth of theThCr2Si2- and CaBe2Ge2-type structures, has been discovered via Sn flux growth.
Featurization terminated normally.
0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[214.0, 22, '%', 3],[218.0, 5, 'K', 3],[232.0, 7, 'T', 3]

Sn
###Novel polymorphic phase of BaCu2As2: impact of flux for new phase formation in crystal growth|Hanlin Wu,Sheng Li,Zheng Wu,Xiqu Wang,Gareth A. Ofenstein,Sunah Kwon,Moon J. Kim,Paul C. W. Chu,Bing Lv###
(1672253, 1672253)
 While Pb and CuAsself-flux produce the well-known alpha-phase ThCr2Si2-type structure (Z<missing VAR>2),a new polymorphic phase of BaCu2As2 (b<missing VAR>eta phase) with a much larger c<missing VAR>lattice parameter (Z<missing VAR>10), which could be considered an intergrowth of theThCr2Si2- and CaBe2Ge2-type structures, has been discovered via Sn flux growth.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[199.0, 22, '%', 3],[203.0, 5, 'K', 3],[217.0, 7, 'T', 3]

S
###Novel polymorphic phase of BaCu2As2: impact of flux for new phase formation in crystal growth|Hanlin Wu,Sheng Li,Zheng Wu,Xiqu Wang,Gareth A. Ofenstein,Sunah Kwon,Moon J. Kim,Paul C. W. Chu,Bing Lv###
(1672310, 1672310)
We have characterized this structure through single-crystal X<missing VAR>-ray diffraction,transmission electron microscopy (TEM), and scanning transmission electronmicroscopy (STEM) studies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 22, '%', 2],[146.0, 5, 'K', 2],[160.0, 7, 'T', 2]

BaCu2As2
###Novel polymorphic phase of BaCu2As2: impact of flux for new phase formation in crystal growth|Hanlin Wu,Sheng Li,Zheng Wu,Xiqu Wang,Gareth A. Ofenstein,Sunah Kwon,Moon J. Kim,Paul C. W. Chu,Bing Lv###
(1672345, 1672349)
 Furthermore, we compare this new polymorphicintergrowth structure with the alpha-phase BaCu2As2 (ThCr2Si2 type with Z<missing VAR>2)and the b<missing VAR>eta-phase BaCu2Sb2 (intergrowth of ThCr2Si2 and CaBe2Ge2 types withZ<missing VAR>6), both with the same space group I4/mmm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 22, '%', 1],[107.0, 5, 'K', 1],[121.0, 7, 'T', 1]

ThCr2Si2
###Novel polymorphic phase of BaCu2As2: impact of flux for new phase formation in crystal growth|Hanlin Wu,Sheng Li,Zheng Wu,Xiqu Wang,Gareth A. Ofenstein,Sunah Kwon,Moon J. Kim,Paul C. W. Chu,Bing Lv###
(1672352, 1672356)
 Furthermore, we compare this new polymorphicintergrowth structure with the alpha-phase BaCu2As2 (ThCr2Si2 type with Z<missing VAR>2)and the b<missing VAR>eta-phase BaCu2Sb2 (intergrowth of ThCr2Si2 and CaBe2Ge2 types withZ<missing VAR>6), both with the same space group I4/mmm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 22, '%', 1],[100.0, 5, 'K', 1],[114.0, 7, 'T', 1]

BaCu2Sb2
###Novel polymorphic phase of BaCu2As2: impact of flux for new phase formation in crystal growth|Hanlin Wu,Sheng Li,Zheng Wu,Xiqu Wang,Gareth A. Ofenstein,Sunah Kwon,Moon J. Kim,Paul C. W. Chu,Bing Lv###
(1672376, 1672380)
 Furthermore, we compare this new polymorphicintergrowth structure with the alpha-phase BaCu2As2 (ThCr2Si2 type with Z<missing VAR>2)and the b<missing VAR>eta-phase BaCu2Sb2 (intergrowth of ThCr2Si2 and CaBe2Ge2 types withZ<missing VAR>6), both with the same space group I4/mmm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 22, '%', 1],[76.0, 5, 'K', 1],[90.0, 7, 'T', 1]

ThCr2Si2
###Novel polymorphic phase of BaCu2As2: impact of flux for new phase formation in crystal growth|Hanlin Wu,Sheng Li,Zheng Wu,Xiqu Wang,Gareth A. Ofenstein,Sunah Kwon,Moon J. Kim,Paul C. W. Chu,Bing Lv###
(1672387, 1672391)
 Furthermore, we compare this new polymorphicintergrowth structure with the alpha-phase BaCu2As2 (ThCr2Si2 type with Z<missing VAR>2)and the b<missing VAR>eta-phase BaCu2Sb2 (intergrowth of ThCr2Si2 and CaBe2Ge2 types withZ<missing VAR>6), both with the same space group I4/mmm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 22, '%', 1],[65.0, 5, 'K', 1],[79.0, 7, 'T', 1]

CaBe2Ge2
###Novel polymorphic phase of BaCu2As2: impact of flux for new phase formation in crystal growth|Hanlin Wu,Sheng Li,Zheng Wu,Xiqu Wang,Gareth A. Ofenstein,Sunah Kwon,Moon J. Kim,Paul C. W. Chu,Bing Lv###
(1672395, 1672399)
 Furthermore, we compare this new polymorphicintergrowth structure with the alpha-phase BaCu2As2 (ThCr2Si2 type with Z<missing VAR>2)and the b<missing VAR>eta-phase BaCu2Sb2 (intergrowth of ThCr2Si2 and CaBe2Ge2 types withZ<missing VAR>6), both with the same space group I4/mmm.
Featurization terminated normally.
0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 22, '%', 1],[57.0, 5, 'K', 1],[71.0, 7, 'T', 1]

I4
###Novel polymorphic phase of BaCu2As2: impact of flux for new phase formation in crystal growth|Hanlin Wu,Sheng Li,Zheng Wu,Xiqu Wang,Gareth A. Ofenstein,Sunah Kwon,Moon J. Kim,Paul C. W. Chu,Bing Lv###
(1672423, 1672424)
 Furthermore, we compare this new polymorphicintergrowth structure with the alpha-phase BaCu2As2 (ThCr2Si2 type with Z<missing VAR>2)and the b<missing VAR>eta-phase BaCu2Sb2 (intergrowth of ThCr2Si2 and CaBe2Ge2 types withZ<missing VAR>6), both with the same space group I4/mmm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 22, '%', 1],[32.0, 5, 'K', 1],[46.0, 7, 'T', 1]

SnTe
###Changes of Fermi Surface Topology due to the Rhombohedral Distortion in SnTe|Christopher D. O'Neill,Oliver J. Clark,Harry D. J. Keen,Federico Mazzola,Igor Marković,Dmitry A. Sokolov,Andreas Malekos,Phil D. C. King,Andreas Hermann,Andrew D. Huxley###
(1672548, 1672549)
Changes of Fermi Surface Topology due to the Rhombohedral Distortion in SnTe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[159.0, 10, 'kbar', 4]

SnTe
###Changes of Fermi Surface Topology due to the Rhombohedral Distortion in SnTe|Christopher D. O'Neill,Oliver J. Clark,Harry D. J. Keen,Federico Mazzola,Igor Marković,Dmitry A. Sokolov,Andreas Malekos,Phil D. C. King,Andreas Hermann,Andrew D. Huxley###
(1672554, 1672555)
 Stoichiometric SnTe is theoretically a small gap semiconductor that undergoesa ferroelectric distortion on cooling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 10, 'kbar', 3]

In
###Changes of Fermi Surface Topology due to the Rhombohedral Distortion in SnTe|Christopher D. O'Neill,Oliver J. Clark,Harry D. J. Keen,Federico Mazzola,Igor Marković,Dmitry A. Sokolov,Andreas Malekos,Phil D. C. King,Andreas Hermann,Andrew D. Huxley###
(1672585, 1672585)
 In reality however, crystals are alwaysnon-stoichiometric and metallic; the ferroelectric transition is therefore moreaccurately described as a polar structural transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 10, 'kbar', 2]

S
###Changes of Fermi Surface Topology due to the Rhombohedral Distortion in SnTe|Christopher D. O'Neill,Oliver J. Clark,Harry D. J. Keen,Federico Mazzola,Igor Marković,Dmitry A. Sokolov,Andreas Malekos,Phil D. C. King,Andreas Hermann,Andrew D. Huxley###
(1672792, 1672792)
 Combined with our density functional theory (DFT)calculations and angle resolved photoemission spectroscopy (ARPES) measurementsthis suggests the Fermi surface L<missing VAR>-pockets have lower mobility than thetubular Fermi surfaces that connect them.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 10, 'kbar', 2]

Sr2VO3FeAs
###Proximity-induced hidden order transition in a correlated heterostructure Sr$_2$VO$_3$FeAs|Sunghun Kim,Jong Mok Ok,Hanbit Oh,Chang-il Kwon,Y. Zhang,J. D. Denlinger,S. -K. Mo,F. Wolff-Fabris,E. Kampert,Eun-Gook Moon,C. Kim,Jun Sung Kim,Y. K. Kim###
(1672974, 1672980)
Proximity-induced hidden order transition in a correlated heterostructure Sr2VO3FeAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0.375,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0.125,0,0,0,0,0,0,0.125,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[295.0, 150, 'K', 5]

In
###Proximity-induced hidden order transition in a correlated heterostructure Sr$_2$VO$_3$FeAs|Sunghun Kim,Jong Mok Ok,Hanbit Oh,Chang-il Kwon,Y. Zhang,J. D. Denlinger,S. -K. Mo,F. Wolff-Fabris,E. Kampert,Eun-Gook Moon,C. Kim,Jun Sung Kim,Y. K. Kim###
(1673035, 1673035)
 In strongly correlated systems, however, mysterious and enigmaticphase transitions, inapplicable of the symmetry description, have beendiscovered and often dubbed hidden order transitions, as found in, ite.g.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[240.0, 150, 'K', 3]

C
###Proximity-induced hidden order transition in a correlated heterostructure Sr$_2$VO$_3$FeAs|Sunghun Kim,Jong Mok Ok,Hanbit Oh,Chang-il Kwon,Y. Zhang,J. D. Denlinger,S. -K. Mo,F. Wolff-Fabris,E. Kampert,Eun-Gook Moon,C. Kim,Jun Sung Kim,Y. K. Kim###
(1673108, 1673108)
,high-T<missing VAR>C cuprates, heavy fermion superconductors, and quantum spin liquidcandidates.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 150, 'K', 2]

Sr2VO3FeAs
###Proximity-induced hidden order transition in a correlated heterostructure Sr$_2$VO$_3$FeAs|Sunghun Kim,Jong Mok Ok,Hanbit Oh,Chang-il Kwon,Y. Zhang,J. D. Denlinger,S. -K. Mo,F. Wolff-Fabris,E. Kampert,Eun-Gook Moon,C. Kim,Jun Sung Kim,Y. K. Kim###
(1673162, 1673168)
 Here, we report a new type of hidden order transition in acorrelated heterostructure Sr2VO3FeAs, whose origin is attributed to anunusually enhanced Kondo-type proximity coupling between localized spins of Vand itinerant electrons of FeAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0.375,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0.125,0,0,0,0,0,0,0.125,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 150, 'K', 1]

V
###Proximity-induced hidden order transition in a correlated heterostructure Sr$_2$VO$_3$FeAs|Sunghun Kim,Jong Mok Ok,Hanbit Oh,Chang-il Kwon,Y. Zhang,J. D. Denlinger,S. -K. Mo,F. Wolff-Fabris,E. Kampert,Eun-Gook Moon,C. Kim,Jun Sung Kim,Y. K. Kim###
(1673204, 1673204)
 Here, we report a new type of hidden order transition in acorrelated heterostructure Sr2VO3FeAs, whose origin is attributed to anunusually enhanced Kondo-type proximity coupling between localized spins of Vand itinerant electrons of FeAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 150, 'K', 1]

FeAs
###Proximity-induced hidden order transition in a correlated heterostructure Sr$_2$VO$_3$FeAs|Sunghun Kim,Jong Mok Ok,Hanbit Oh,Chang-il Kwon,Y. Zhang,J. D. Denlinger,S. -K. Mo,F. Wolff-Fabris,E. Kampert,Eun-Gook Moon,C. Kim,Jun Sung Kim,Y. K. Kim###
(1673215, 1673216)
 Here, we report a new type of hidden order transition in acorrelated heterostructure Sr2VO3FeAs, whose origin is attributed to anunusually enhanced Kondo-type proximity coupling between localized spins of Vand itinerant electrons of FeAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 150, 'K', 1]

HO
###Proximity-induced hidden order transition in a correlated heterostructure Sr$_2$VO$_3$FeAs|Sunghun Kim,Jong Mok Ok,Hanbit Oh,Chang-il Kwon,Y. Zhang,J. D. Denlinger,S. -K. Mo,F. Wolff-Fabris,E. Kampert,Eun-Gook Moon,C. Kim,Jun Sung Kim,Y. K. Kim###
(1673271, 1673272)
 Most notably, a fully isotropic gap opening,identified by angle-resolved photoemission spectroscopy, occurs selectively inone of the Fermi surfaces below T<missing VAR>rm HO sim 150 K, associated with asingular behavior of the specific heat and a strong enhancement on theanisotropic magnetoresistance.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 150, 'K', 0]

I
###Demonstration of Dissipative Quasihelical Edge Transport in Quantum Anomalous Hall Insulators|Shu-Wei Wang,Di Xiao,Ziwei Dou,Moda Cao,Yi-Fan Zhao,Nitin Samarth,Cui-Zu Chang,Malcolm R. Connolly,Charles G. Smith###
(1673446, 1673446)
 Doping a topological insulator (T<missing VAR>I) film with transition metal ions can breakits time-reversal symmetry and lead to the realization of the quantum anomalousHall (Q<missing VAR>AH) effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Demonstration of Dissipative Quasihelical Edge Transport in Quantum Anomalous Hall Insulators|Shu-Wei Wang,Di Xiao,Ziwei Dou,Moda Cao,Yi-Fan Zhao,Nitin Samarth,Cui-Zu Chang,Malcolm R. Connolly,Charles G. Smith###
(1673496, 1673496)
 Doping a topological insulator (T<missing VAR>I) film with transition metal ions can breakits time-reversal symmetry and lead to the realization of the quantum anomalousHall (Q<missing VAR>AH) effect.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Demonstration of Dissipative Quasihelical Edge Transport in Quantum Anomalous Hall Insulators|Shu-Wei Wang,Di Xiao,Ziwei Dou,Moda Cao,Yi-Fan Zhao,Nitin Samarth,Cui-Zu Chang,Malcolm R. Connolly,Charles G. Smith###
(1673525, 1673525)
 Prior studies have shown that the longitudinal resistance ofthe Q<missing VAR>AH samples usually does not vanish when the Hall resistance shows a goodquantization.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Demonstration of Dissipative Quasihelical Edge Transport in Quantum Anomalous Hall Insulators|Shu-Wei Wang,Di Xiao,Ziwei Dou,Moda Cao,Yi-Fan Zhao,Nitin Samarth,Cui-Zu Chang,Malcolm R. Connolly,Charles G. Smith###
(1673591, 1673591)
 This has been interpreted as a result of the presence of possibledissipative conducting channels in magnetic T<missing VAR>I samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Demonstration of Dissipative Quasihelical Edge Transport in Quantum Anomalous Hall Insulators|Shu-Wei Wang,Di Xiao,Ziwei Dou,Moda Cao,Yi-Fan Zhao,Nitin Samarth,Cui-Zu Chang,Malcolm R. Connolly,Charles G. Smith###
(1673628, 1673628)
 By studying thetemperature- and magnetic field-dependence of the magnetoresistance of amagnetic T<missing VAR>I sandwich heterostructure device, we demonstrate that thepredominant dissipation mechanism in thick Q<missing VAR>AH insulators can switch betweennon-chiral edge states and residual bulk states in different magnetic fieldregimes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Demonstration of Dissipative Quasihelical Edge Transport in Quantum Anomalous Hall Insulators|Shu-Wei Wang,Di Xiao,Ziwei Dou,Moda Cao,Yi-Fan Zhao,Nitin Samarth,Cui-Zu Chang,Malcolm R. Connolly,Charles G. Smith###
(1673658, 1673658)
 By studying thetemperature- and magnetic field-dependence of the magnetoresistance of amagnetic T<missing VAR>I sandwich heterostructure device, we demonstrate that thepredominant dissipation mechanism in thick Q<missing VAR>AH insulators can switch betweennon-chiral edge states and residual bulk states in different magnetic fieldregimes.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Demonstration of Dissipative Quasihelical Edge Transport in Quantum Anomalous Hall Insulators|Shu-Wei Wang,Di Xiao,Ziwei Dou,Moda Cao,Yi-Fan Zhao,Nitin Samarth,Cui-Zu Chang,Malcolm R. Connolly,Charles G. Smith###
(1673799, 1673799)
 Our study provides a way todistinguish between the dissipation arising from the residual bulk states andnon-chiral edge states, which is crucial for achieving true dissipationlesstransport in Q<missing VAR>AH insulators and for providing deeper insights into Q<missing VAR>AH-relatedphenomena.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Demonstration of Dissipative Quasihelical Edge Transport in Quantum Anomalous Hall Insulators|Shu-Wei Wang,Di Xiao,Ziwei Dou,Moda Cao,Yi-Fan Zhao,Nitin Samarth,Cui-Zu Chang,Malcolm R. Connolly,Charles G. Smith###
(1673817, 1673817)
 Our study provides a way todistinguish between the dissipation arising from the residual bulk states andnon-chiral edge states, which is crucial for achieving true dissipationlesstransport in Q<missing VAR>AH insulators and for providing deeper insights into Q<missing VAR>AH-relatedphenomena.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrRu1-xTi
###Electronic properties in itinerant ferromagnet SrRu$_{1-x}$Ti$_x$O$_3$|Renu Gupta,R. Rawat,A. K. Pramanik###
(1673843, 1673848)
Electronic properties in itinerant ferromagnet SrRu1-xTix<missing VAR>O3.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[104.0, 160, 'K', 2]

O3
###Electronic properties in itinerant ferromagnet SrRu$_{1-x}$Ti$_x$O$_3$|Renu Gupta,R. Rawat,A. K. Pramanik###
(1673850, 1673851)
Electronic properties in itinerant ferromagnet SrRu1-xTix<missing VAR>O3.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 160, 'K', 2]

SrRuO3
###Electronic properties in itinerant ferromagnet SrRu$_{1-x}$Ti$_x$O$_3$|Renu Gupta,R. Rawat,A. K. Pramanik###
(1673885, 1673888)
 Here, we study the electrical transport and specific heat in 4d<missing VAR> basedferromagnetic material SrRuO3 and its Ti substituted SrRu1-xTix<missing VAR>O3series (x<missing VAR> le 0.7).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 160, 'K', 1]

Ti
###Electronic properties in itinerant ferromagnet SrRu$_{1-x}$Ti$_x$O$_3$|Renu Gupta,R. Rawat,A. K. Pramanik###
(1673894, 1673894)
 Here, we study the electrical transport and specific heat in 4d<missing VAR> basedferromagnetic material SrRuO3 and its Ti substituted SrRu1-xTix<missing VAR>O3series (x<missing VAR> le 0.7).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 160, 'K', 1]

SrRu1-xTi
###Electronic properties in itinerant ferromagnet SrRu$_{1-x}$Ti$_x$O$_3$|Renu Gupta,R. Rawat,A. K. Pramanik###
(1673898, 1673903)
 Here, we study the electrical transport and specific heat in 4d<missing VAR> basedferromagnetic material SrRuO3 and its Ti substituted SrRu1-xTix<missing VAR>O3series (x<missing VAR> le 0.7).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[49.0, 160, 'K', 1]

O3
###Electronic properties in itinerant ferromagnet SrRu$_{1-x}$Ti$_x$O$_3$|Renu Gupta,R. Rawat,A. K. Pramanik###
(1673905, 1673906)
 Here, we study the electrical transport and specific heat in 4d<missing VAR> basedferromagnetic material SrRuO3 and its Ti substituted SrRu1-xTix<missing VAR>O3series (x<missing VAR> le 0.7).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 160, 'K', 1]

SrRuO3
###Electronic properties in itinerant ferromagnet SrRu$_{1-x}$Ti$_x$O$_3$|Renu Gupta,R. Rawat,A. K. Pramanik###
(1673922, 1673925)
 The SrRuO3 is a metal and shows itinerantferromagnetism with transition temperature Tc sim 160 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 160, 'K', 0]

Ti4
###Electronic properties in itinerant ferromagnet SrRu$_{1-x}$Ti$_x$O$_3$|Renu Gupta,R. Rawat,A. K. Pramanik###
(1673960, 1673961)
 The nonmagneticTi4 (3d<missing VAR>0) substitution would not only weaken the active Ru-O-Ruchannel but is also expected to tune the electronic density and electroncorrelation effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 160, 'K', 1]

Ru
###Electronic properties in itinerant ferromagnet SrRu$_{1-x}$Ti$_x$O$_3$|Renu Gupta,R. Rawat,A. K. Pramanik###
(1673983, 1673983)
 The nonmagneticTi4 (3d<missing VAR>0) substitution would not only weaken the active Ru-O-Ruchannel but is also expected to tune the electronic density and electroncorrelation effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 160, 'K', 1]

O
###Electronic properties in itinerant ferromagnet SrRu$_{1-x}$Ti$_x$O$_3$|Renu Gupta,R. Rawat,A. K. Pramanik###
(1673985, 1673985)
 The nonmagneticTi4 (3d<missing VAR>0) substitution would not only weaken the active Ru-O-Ruchannel but is also expected to tune the electronic density and electroncorrelation effect.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 160, 'K', 1]

Ru
###Electronic properties in itinerant ferromagnet SrRu$_{1-x}$Ti$_x$O$_3$|Renu Gupta,R. Rawat,A. K. Pramanik###
(1673987, 1673987)
 The nonmagneticTi4 (3d<missing VAR>0) substitution would not only weaken the active Ru-O-Ruchannel but is also expected to tune the electronic density and electroncorrelation effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 160, 'K', 1]

In
###Electronic properties in itinerant ferromagnet SrRu$_{1-x}$Ti$_x$O$_3$|Renu Gupta,R. Rawat,A. K. Pramanik###
(1674106, 1674106)
 In ferromagnetic-metallic state, resistivityshows a T<missing VAR>2 dependence below Tc which though modifies to T<missing VAR>3/2dependence at low temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 160, 'K', 4]

In
###Electronic properties in itinerant ferromagnet SrRu$_{1-x}$Ti$_x$O$_3$|Renu Gupta,R. Rawat,A. K. Pramanik###
(1674155, 1674155)
 In Ti substituted samples, temperature range forT<missing VAR>3/2 dependence extends to higher temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[203.0, 160, 'K', 5]

Ti
###Electronic properties in itinerant ferromagnet SrRu$_{1-x}$Ti$_x$O$_3$|Renu Gupta,R. Rawat,A. K. Pramanik###
(1674157, 1674157)
 In Ti substituted samples, temperature range forT<missing VAR>3/2 dependence extends to higher temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, 160, 'K', 5]

SrRuO3
###Electronic properties in itinerant ferromagnet SrRu$_{1-x}$Ti$_x$O$_3$|Renu Gupta,R. Rawat,A. K. Pramanik###
(1674382, 1674385)
 We calculate a high Kadowaki-Woods ratio (x<missing VAR>leq 0.3) for SrRuO3 which increases with substitution concentration.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[430.0, 160, 'K', 10]

Mn3Pt
###Sign reversal of anomalous Hall conductivity and magnetoresistance in cubic non-collinear antiferromagnet Mn$_3$Pt thin films|Joynarayan Mukherjee,T. S. Suraj,Himalaya Basumatary,K. Sethupathi,Karthik V. Raman###
(1674455, 1674457)
Sign reversal of anomalous Hall conductivity and magnetoresistance in cubic non-collinear antiferromagnet Mn3Pt thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[279.0, 100, 'K', 4],[388.0, 70, 'K', 6]

Mn
###Sign reversal of anomalous Hall conductivity and magnetoresistance in cubic non-collinear antiferromagnet Mn$_3$Pt thin films|Joynarayan Mukherjee,T. S. Suraj,Himalaya Basumatary,K. Sethupathi,Karthik V. Raman###
(1674480, 1674480)
 The two dimensional kagome spin lattice structure of Mn atoms in the familyof Mn3X<missing VAR> non-collinear antiferromagnets are providing substantial excitementin the exploration of Berry curvature physics and the associated non-trivialmagnetotransport responses.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[256.0, 100, 'K', 3],[365.0, 70, 'K', 5]

Mn3
###Sign reversal of anomalous Hall conductivity and magnetoresistance in cubic non-collinear antiferromagnet Mn$_3$Pt thin films|Joynarayan Mukherjee,T. S. Suraj,Himalaya Basumatary,K. Sethupathi,Karthik V. Raman###
(1674493, 1674494)
 The two dimensional kagome spin lattice structure of Mn atoms in the familyof Mn3X<missing VAR> non-collinear antiferromagnets are providing substantial excitementin the exploration of Berry curvature physics and the associated non-trivialmagnetotransport responses.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[242.0, 100, 'K', 3],[351.0, 70, 'K', 5]

Mn3Sn
###Sign reversal of anomalous Hall conductivity and magnetoresistance in cubic non-collinear antiferromagnet Mn$_3$Pt thin films|Joynarayan Mukherjee,T. S. Suraj,Himalaya Basumatary,K. Sethupathi,Karthik V. Raman###
(1674566, 1674568)
 Much of these studies are performed in thehexagonal systems, mainly Mn3Sn and Mn3Ge, with the kagome planes havingtheir normal along the [001] direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[168.0, 100, 'K', 2],[277.0, 70, 'K', 4]

Mn3Ge
###Sign reversal of anomalous Hall conductivity and magnetoresistance in cubic non-collinear antiferromagnet Mn$_3$Pt thin films|Joynarayan Mukherjee,T. S. Suraj,Himalaya Basumatary,K. Sethupathi,Karthik V. Raman###
(1674572, 1674574)
 Much of these studies are performed in thehexagonal systems, mainly Mn3Sn and Mn3Ge, with the kagome planes havingtheir normal along the [001] direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 100, 'K', 2],[271.0, 70, 'K', 4]

In
###Sign reversal of anomalous Hall conductivity and magnetoresistance in cubic non-collinear antiferromagnet Mn$_3$Pt thin films|Joynarayan Mukherjee,T. S. Suraj,Himalaya Basumatary,K. Sethupathi,Karthik V. Raman###
(1674603, 1674603)
 In this manuscript, we report our studyin the cubic Mn3Pt thin films with their kagome planes normal to the [111]crystal axis.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 100, 'K', 1],[242.0, 70, 'K', 3]

Mn3Pt
###Sign reversal of anomalous Hall conductivity and magnetoresistance in cubic non-collinear antiferromagnet Mn$_3$Pt thin films|Joynarayan Mukherjee,T. S. Suraj,Himalaya Basumatary,K. Sethupathi,Karthik V. Raman###
(1674625, 1674627)
 In this manuscript, we report our studyin the cubic Mn3Pt thin films with their kagome planes normal to the [111]crystal axis.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 100, 'K', 1],[218.0, 70, 'K', 3]

C
###Sign reversal of anomalous Hall conductivity and magnetoresistance in cubic non-collinear antiferromagnet Mn$_3$Pt thin films|Joynarayan Mukherjee,T. S. Suraj,Himalaya Basumatary,K. Sethupathi,Karthik V. Raman###
(1674699, 1674699)
 Our studies reveal a hole conduction dominant Hall response witha non-monotonic temperature dependence of anomalous Hall conductivity (AHC),increasing from 9 Omega-1cm-1 at room temperature to 29Omega-1cm-1 at 100 K, followed by a drop and unexpectedsign-reversal at lower temperatures.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 100, 'K', 0],[146.0, 70, 'K', 2]

HC
###Sign reversal of anomalous Hall conductivity and magnetoresistance in cubic non-collinear antiferromagnet Mn$_3$Pt thin films|Joynarayan Mukherjee,T. S. Suraj,Himalaya Basumatary,K. Sethupathi,Karthik V. Raman###
(1674811, 1674812)
 We attribute this sign reversal to thetransition from a Berry curvature dominated AHC at high temperature to a weakcanted ferromagnetic AHC response at lower temperature, below 70 K, caused bythe reorientation of Mn moments out of the kagome plane.
Featurization terminated normally.
0.5,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 100, 'K', 2],[33.0, 70, 'K', 0]

HC
###Sign reversal of anomalous Hall conductivity and magnetoresistance in cubic non-collinear antiferromagnet Mn$_3$Pt thin films|Joynarayan Mukherjee,T. S. Suraj,Himalaya Basumatary,K. Sethupathi,Karthik V. Raman###
(1674832, 1674833)
 We attribute this sign reversal to thetransition from a Berry curvature dominated AHC at high temperature to a weakcanted ferromagnetic AHC response at lower temperature, below 70 K, caused bythe reorientation of Mn moments out of the kagome plane.
Featurization terminated normally.
0.5,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 100, 'K', 2],[12.0, 70, 'K', 0]

Mn
###Sign reversal of anomalous Hall conductivity and magnetoresistance in cubic non-collinear antiferromagnet Mn$_3$Pt thin films|Joynarayan Mukherjee,T. S. Suraj,Himalaya Basumatary,K. Sethupathi,Karthik V. Raman###
(1674859, 1674859)
 We attribute this sign reversal to thetransition from a Berry curvature dominated AHC at high temperature to a weakcanted ferromagnetic AHC response at lower temperature, below 70 K, caused bythe reorientation of Mn moments out of the kagome plane.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 100, 'K', 2],[14.0, 70, 'K', 0]

Mn3Pt
###Sign reversal of anomalous Hall conductivity and magnetoresistance in cubic non-collinear antiferromagnet Mn$_3$Pt thin films|Joynarayan Mukherjee,T. S. Suraj,Himalaya Basumatary,K. Sethupathi,Karthik V. Raman###
(1674889, 1674891)
 Our above results inthin films of Mn3Pt make advances in their integration with room temperatureantiferromagnetic spintronics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 100, 'K', 3],[44.0, 70, 'K', 1]

II
###Bulk Fermi surfaces of the Dirac type-II semimetallic candidate NiTe2|Wenkai Zheng,Rico Schönemann,Shirin Mozaffari,Yu-Che Chiu,Zachary Bryce Goraum,Niraj Aryal,Efstratios Manousakis,Theo M. Siegrist,Kaya Wei,Luis Balicas###
(1674937, 1674938)
Bulk Fermi surfaces of the Dirac type-II semimetallic candidate NiTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiTe2
###Bulk Fermi surfaces of the Dirac type-II semimetallic candidate NiTe2|Wenkai Zheng,Rico Schönemann,Shirin Mozaffari,Yu-Che Chiu,Zachary Bryce Goraum,Niraj Aryal,Efstratios Manousakis,Theo M. Siegrist,Kaya Wei,Luis Balicas###
(1674944, 1674946)
Bulk Fermi surfaces of the Dirac type-II semimetallic candidate NiTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Bulk Fermi surfaces of the Dirac type-II semimetallic candidate NiTe2|Wenkai Zheng,Rico Schönemann,Shirin Mozaffari,Yu-Che Chiu,Zachary Bryce Goraum,Niraj Aryal,Efstratios Manousakis,Theo M. Siegrist,Kaya Wei,Luis Balicas###
(1674976, 1674977)
 Here, we present a study on the Fermi-surface of the Dirac type-IIsemi-metallic candidate NiTe2 via the temperature and angular dependence ofthe de Haas-van Alphen (d<missing VAR>HvA) effect measured in single-crystals grown throughTe flux.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiTe2
###Bulk Fermi surfaces of the Dirac type-II semimetallic candidate NiTe2|Wenkai Zheng,Rico Schönemann,Shirin Mozaffari,Yu-Che Chiu,Zachary Bryce Goraum,Niraj Aryal,Efstratios Manousakis,Theo M. Siegrist,Kaya Wei,Luis Balicas###
(1674986, 1674988)
 Here, we present a study on the Fermi-surface of the Dirac type-IIsemi-metallic candidate NiTe2 via the temperature and angular dependence ofthe de Haas-van Alphen (d<missing VAR>HvA) effect measured in single-crystals grown throughTe flux.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Te
###Bulk Fermi surfaces of the Dirac type-II semimetallic candidate NiTe2|Wenkai Zheng,Rico Schönemann,Shirin Mozaffari,Yu-Che Chiu,Zachary Bryce Goraum,Niraj Aryal,Efstratios Manousakis,Theo M. Siegrist,Kaya Wei,Luis Balicas###
(1675036, 1675036)
 Here, we present a study on the Fermi-surface of the Dirac type-IIsemi-metallic candidate NiTe2 via the temperature and angular dependence ofthe de Haas-van Alphen (d<missing VAR>HvA) effect measured in single-crystals grown throughTe flux.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Bulk Fermi surfaces of the Dirac type-II semimetallic candidate NiTe2|Wenkai Zheng,Rico Schönemann,Shirin Mozaffari,Yu-Che Chiu,Zachary Bryce Goraum,Niraj Aryal,Efstratios Manousakis,Theo M. Siegrist,Kaya Wei,Luis Balicas###
(1675041, 1675041)
 In contrast to its isostructural compounds like PtSe2, bandstructure calculations predict NiTe2 to display a tilted Dirac node veryclose to its Fermi level that is located along the Gamma to A high symmetrydirection within its first Brillouin zone (FBZ).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PtSe2
###Bulk Fermi surfaces of the Dirac type-II semimetallic candidate NiTe2|Wenkai Zheng,Rico Schönemann,Shirin Mozaffari,Yu-Che Chiu,Zachary Bryce Goraum,Niraj Aryal,Efstratios Manousakis,Theo M. Siegrist,Kaya Wei,Luis Balicas###
(1675055, 1675057)
 In contrast to its isostructural compounds like PtSe2, bandstructure calculations predict NiTe2 to display a tilted Dirac node veryclose to its Fermi level that is located along the Gamma to A high symmetrydirection within its first Brillouin zone (FBZ).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiTe2
###Bulk Fermi surfaces of the Dirac type-II semimetallic candidate NiTe2|Wenkai Zheng,Rico Schönemann,Shirin Mozaffari,Yu-Che Chiu,Zachary Bryce Goraum,Niraj Aryal,Efstratios Manousakis,Theo M. Siegrist,Kaya Wei,Luis Balicas###
(1675069, 1675071)
 In contrast to its isostructural compounds like PtSe2, bandstructure calculations predict NiTe2 to display a tilted Dirac node veryclose to its Fermi level that is located along the Gamma to A high symmetrydirection within its first Brillouin zone (FBZ).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FB
###Bulk Fermi surfaces of the Dirac type-II semimetallic candidate NiTe2|Wenkai Zheng,Rico Schönemann,Shirin Mozaffari,Yu-Che Chiu,Zachary Bryce Goraum,Niraj Aryal,Efstratios Manousakis,Theo M. Siegrist,Kaya Wei,Luis Balicas###
(1675132, 1675133)
 In contrast to its isostructural compounds like PtSe2, bandstructure calculations predict NiTe2 to display a tilted Dirac node veryclose to its Fermi level that is located along the Gamma to A high symmetrydirection within its first Brillouin zone (FBZ).
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Bulk Fermi surfaces of the Dirac type-II semimetallic candidate NiTe2|Wenkai Zheng,Rico Schönemann,Shirin Mozaffari,Yu-Che Chiu,Zachary Bryce Goraum,Niraj Aryal,Efstratios Manousakis,Theo M. Siegrist,Kaya Wei,Luis Balicas###
(1675207, 1675207)
 The angular dependence of thed<missing VAR>HvA frequencies is found to be in agreement with the first-principlecalculations when the electronic bands are slightly shifted with respect to theFermi level (varepsilonF), and therefore provide support for the existenceof a Dirac type-II node in NiTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Bulk Fermi surfaces of the Dirac type-II semimetallic candidate NiTe2|Wenkai Zheng,Rico Schönemann,Shirin Mozaffari,Yu-Che Chiu,Zachary Bryce Goraum,Niraj Aryal,Efstratios Manousakis,Theo M. Siegrist,Kaya Wei,Luis Balicas###
(1675234, 1675235)
 The angular dependence of thed<missing VAR>HvA frequencies is found to be in agreement with the first-principlecalculations when the electronic bands are slightly shifted with respect to theFermi level (varepsilonF), and therefore provide support for the existenceof a Dirac type-II node in NiTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiTe2
###Bulk Fermi surfaces of the Dirac type-II semimetallic candidate NiTe2|Wenkai Zheng,Rico Schönemann,Shirin Mozaffari,Yu-Che Chiu,Zachary Bryce Goraum,Niraj Aryal,Efstratios Manousakis,Theo M. Siegrist,Kaya Wei,Luis Balicas###
(1675241, 1675243)
 The angular dependence of thed<missing VAR>HvA frequencies is found to be in agreement with the first-principlecalculations when the electronic bands are slightly shifted with respect to theFermi level (varepsilonF), and therefore provide support for the existenceof a Dirac type-II node in NiTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YI
###Enhancement of YIG$|$Pt spin conductance by local Joule annealing|Ryuhei Kohno,Nicolas Thiery,Kyongmo An,Paul Noël,Laurent Vila,Vladimir V. Naletov,Nathan Beaulieu,Jamal Ben Youssef,Grégoire de Loubens,Olivier Klein###
(1675437, 1675438)
Enhancement of YIG<missing VAR>Pt spin conductance by local Joule annealing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 550, ',', 2],[112.0, 7, ',', 2]

Pt
###Enhancement of YIG$|$Pt spin conductance by local Joule annealing|Ryuhei Kohno,Nicolas Thiery,Kyongmo An,Paul Noël,Laurent Vila,Vladimir V. Naletov,Nathan Beaulieu,Jamal Ben Youssef,Grégoire de Loubens,Olivier Klein###
(1675440, 1675440)
Enhancement of YIG<missing VAR>Pt spin conductance by local Joule annealing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 550, ',', 2],[110.0, 7, ',', 2]

K
###Enhancement of YIG$|$Pt spin conductance by local Joule annealing|Ryuhei Kohno,Nicolas Thiery,Kyongmo An,Paul Noël,Laurent Vila,Vladimir V. Naletov,Nathan Beaulieu,Jamal Ben Youssef,Grégoire de Loubens,Olivier Klein###
(1675520, 1675520)
 We observe that local annealing ofthe interface at about 550,K by injecting large current densities(>1012textA/m<missing VAR>2) into a pristine 7,nm thick Pt nanostrip evaporatedon top of yttrium iron garnet (YIG), can improve the spin transmission up to afactor 3 a result of particular interest for interfacing ultra thin garnetfilms where strong chemical etching of the surface has to be avoided.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 550, ',', 0],[30.0, 7, ',', 0]

Pt
###Enhancement of YIG$|$Pt spin conductance by local Joule annealing|Ryuhei Kohno,Nicolas Thiery,Kyongmo An,Paul Noël,Laurent Vila,Vladimir V. Naletov,Nathan Beaulieu,Jamal Ben Youssef,Grégoire de Loubens,Olivier Klein###
(1675556, 1675556)
 We observe that local annealing ofthe interface at about 550,K by injecting large current densities(>1012textA/m<missing VAR>2) into a pristine 7,nm thick Pt nanostrip evaporatedon top of yttrium iron garnet (YIG), can improve the spin transmission up to afactor 3 a result of particular interest for interfacing ultra thin garnetfilms where strong chemical etching of the surface has to be avoided.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 550, ',', 0],[6.0, 7, ',', 0]

YI
###Enhancement of YIG$|$Pt spin conductance by local Joule annealing|Ryuhei Kohno,Nicolas Thiery,Kyongmo An,Paul Noël,Laurent Vila,Vladimir V. Naletov,Nathan Beaulieu,Jamal Ben Youssef,Grégoire de Loubens,Olivier Klein###
(1675576, 1675577)
 We observe that local annealing ofthe interface at about 550,K by injecting large current densities(>1012textA/m<missing VAR>2) into a pristine 7,nm thick Pt nanostrip evaporatedon top of yttrium iron garnet (YIG), can improve the spin transmission up to afactor 3 a result of particular interest for interfacing ultra thin garnetfilms where strong chemical etching of the surface has to be avoided.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 550, ',', 0],[26.0, 7, ',', 0]

YI
###Enhancement of YIG$|$Pt spin conductance by local Joule annealing|Ryuhei Kohno,Nicolas Thiery,Kyongmo An,Paul Noël,Laurent Vila,Vladimir V. Naletov,Nathan Beaulieu,Jamal Ben Youssef,Grégoire de Loubens,Olivier Klein###
(1675706, 1675707)
 We use it to study the influence of theYIG<missing VAR>Pt coupling on the non-linear spin transport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 550, ',', 2],[156.0, 7, ',', 2]

Pt
###Enhancement of YIG$|$Pt spin conductance by local Joule annealing|Ryuhei Kohno,Nicolas Thiery,Kyongmo An,Paul Noël,Laurent Vila,Vladimir V. Naletov,Nathan Beaulieu,Jamal Ben Youssef,Grégoire de Loubens,Olivier Klein###
(1675709, 1675709)
 We use it to study the influence of theYIG<missing VAR>Pt coupling on the non-linear spin transport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[191.0, 550, ',', 2],[159.0, 7, ',', 2]

YI
###Enhancement of YIG$|$Pt spin conductance by local Joule annealing|Ryuhei Kohno,Nicolas Thiery,Kyongmo An,Paul Noël,Laurent Vila,Vladimir V. Naletov,Nathan Beaulieu,Jamal Ben Youssef,Grégoire de Loubens,Olivier Klein###
(1675821, 1675822)
 We find that thecross-over current from a linear to a non-linear spin transport regime isindependent of this coupling, suggesting that the behavior of pure spincurrents circulating in the dielectric are mostly governed by the physicalproperties of the bare YIG<missing VAR> film beside the Pt nanostrip.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[303.0, 550, ',', 3],[271.0, 7, ',', 3]

Pt
###Enhancement of YIG$|$Pt spin conductance by local Joule annealing|Ryuhei Kohno,Nicolas Thiery,Kyongmo An,Paul Noël,Laurent Vila,Vladimir V. Naletov,Nathan Beaulieu,Jamal Ben Youssef,Grégoire de Loubens,Olivier Klein###
(1675831, 1675831)
 We find that thecross-over current from a linear to a non-linear spin transport regime isindependent of this coupling, suggesting that the behavior of pure spincurrents circulating in the dielectric are mostly governed by the physicalproperties of the bare YIG<missing VAR> film beside the Pt nanostrip.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[313.0, 550, ',', 3],[281.0, 7, ',', 3]

P
###Strange metal from incoherent bosons|Anurag Banerjee,Maxence Grandadam,Hermann Freire,Catherine Pépin###
(1676214, 1676214)
 The bosons emerging from the electron pairs of spin-tripletsymmetry also reproduce the recently observed linear in-field magnetoresistance[P.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 361, ',', 2]

Cd2Os2O7
###A continuous metal-insulator transition driven by spin correlations|Yejun Feng,Yishu Wang,D. M. Silevitch,S. E. Cooper,D. Mandrus,Patrick A. Lee,T. F. Rosenbaum###
(1676486, 1676491)
 Here wedemonstrate a clean example of a spin-correlation-driven metal-insulatortransition in the all-in-all-out pyrochlore antiferromagnet Cd2Os2O7, where thelattice symmetry is fully preserved by the antiferromagnetism.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6363636363636364,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###A continuous metal-insulator transition driven by spin correlations|Yejun Feng,Yishu Wang,D. M. Silevitch,S. E. Cooper,D. Mandrus,Patrick A. Lee,T. F. Rosenbaum###
(1676611, 1676611)
 After theantisymmetric linear magnetoresistance from conductive, ferromagnetic domainwalls is carefully removed experimentally, the Hall coefficient of the bulkreveals four Fermi surfaces, two of electron type and two of hole type,sequentially departing the Fermi level with decreasing temperature below theNeel temperature, T<missing VAR>N.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###A continuous metal-insulator transition driven by spin correlations|Yejun Feng,Yishu Wang,D. M. Silevitch,S. E. Cooper,D. Mandrus,Patrick A. Lee,T. F. Rosenbaum###
(1676618, 1676618)
 After theantisymmetric linear magnetoresistance from conductive, ferromagnetic domainwalls is carefully removed experimentally, the Hall coefficient of the bulkreveals four Fermi surfaces, two of electron type and two of hole type,sequentially departing the Fermi level with decreasing temperature below theNeel temperature, T<missing VAR>N.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cd2Os2O7
###A continuous metal-insulator transition driven by spin correlations|Yejun Feng,Yishu Wang,D. M. Silevitch,S. E. Cooper,D. Mandrus,Patrick A. Lee,T. F. Rosenbaum###
(1676648, 1676653)
 Contrary to the common belief of concurrent magneticand metal-insulator transitions in Cd2Os2O7, the charge gap of a continuousmetal-insulator transition opens only at T<missing VAR>10K, well below T<missing VAR>N227K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6363636363636364,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###A continuous metal-insulator transition driven by spin correlations|Yejun Feng,Yishu Wang,D. M. Silevitch,S. E. Cooper,D. Mandrus,Patrick A. Lee,T. F. Rosenbaum###
(1676683, 1676683)
 Contrary to the common belief of concurrent magneticand metal-insulator transitions in Cd2Os2O7, the charge gap of a continuousmetal-insulator transition opens only at T<missing VAR>10K, well below T<missing VAR>N227K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N227K
###A continuous metal-insulator transition driven by spin correlations|Yejun Feng,Yishu Wang,D. M. Silevitch,S. E. Cooper,D. Mandrus,Patrick A. Lee,T. F. Rosenbaum###
(1676691, 1676693)
 Contrary to the common belief of concurrent magneticand metal-insulator transitions in Cd2Os2O7, the charge gap of a continuousmetal-insulator transition opens only at T<missing VAR>10K, well below T<missing VAR>N227K.
Featurization terminated normally.
0,0,0,0,0,0,0.9956140350877193,0,0,0,0,0,0,0,0,0,0,0,0.0043859649122807015,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###A continuous metal-insulator transition driven by spin correlations|Yejun Feng,Yishu Wang,D. M. Silevitch,S. E. Cooper,D. Mandrus,Patrick A. Lee,T. F. Rosenbaum###
(1676782, 1676782)
 Theinsulating mechanism resolved by the Hall coefficient parallels the Slaterpicture, but without a folded Brillouin zone, and contrasts sharply with thebehavior of Mott insulators and spin density waves, where the electronic gapopens above and at T<missing VAR>N, respectively.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BaMn2Bi2
###Large negative magnetoresistance in BaMn$_2$Bi$_2$ antiferromagnet|Takuma Ogasawara,Kim-Khuong Huynh,Time Tahara,Takanori Kida,Masayuki Hagiwara,Denis Arčon,Motoi Kimata,Stephane Yu Matsushita,Kazumasa Nagata,Katsumi Tanigaki###
(1676804, 1676808)
Large negative magnetoresistance in BaMn2Bi2 antiferromagnet.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[192.0, 2, ',', 3]

BaMn2Bi2
###Large negative magnetoresistance in BaMn$_2$Bi$_2$ antiferromagnet|Takuma Ogasawara,Kim-Khuong Huynh,Time Tahara,Takanori Kida,Masayuki Hagiwara,Denis Arčon,Motoi Kimata,Stephane Yu Matsushita,Kazumasa Nagata,Katsumi Tanigaki###
(1676849, 1676853)
 A very large negative magnetoresistance (LNMR) is observed in the insulatingregime of the antiferromagnet BaMn2Bi2 when a magnetic field is appliedperpendicular to the direction of the sublattice magnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 2, ',', 2]

BaMn2Bi2
###Large negative magnetoresistance in BaMn$_2$Bi$_2$ antiferromagnet|Takuma Ogasawara,Kim-Khuong Huynh,Time Tahara,Takanori Kida,Masayuki Hagiwara,Denis Arčon,Motoi Kimata,Stephane Yu Matsushita,Kazumasa Nagata,Katsumi Tanigaki###
(1676909, 1676913)
 Highperpendicular magnetic field eventually suppresses the insulating behavior andallows BaMn2Bi2 to re-enter a metallic state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 2, ',', 1]

K
###Large negative magnetoresistance in BaMn$_2$Bi$_2$ antiferromagnet|Takuma Ogasawara,Kim-Khuong Huynh,Time Tahara,Takanori Kida,Masayuki Hagiwara,Denis Arčon,Motoi Kimata,Stephane Yu Matsushita,Kazumasa Nagata,Katsumi Tanigaki###
(1677003, 1677003)
 This effect is seeminglyunrelated to any field induced magnetic phase transition, as measurements ofmagnetic susceptibility and specific heat did not find any anomaly as afunction of magnetic fields at temperatures above 2,mathrmK.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 2, ',', 0]

BaMn2Bi2
###Large negative magnetoresistance in BaMn$_2$Bi$_2$ antiferromagnet|Takuma Ogasawara,Kim-Khuong Huynh,Time Tahara,Takanori Kida,Masayuki Hagiwara,Denis Arčon,Motoi Kimata,Stephane Yu Matsushita,Kazumasa Nagata,Katsumi Tanigaki###
(1677167, 1677171)
 The LNMR-induced metallic state may thus beassociated with the breaking of the antiferromagnetic parity-time symmetry byperpendicular magnetic fields and/or the intricate multi-orbital electronicstructure of BaMn2Bi2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 2, ',', 2]

EuB5.99C0.01
###Evidence formagnetic phase separation in colossal magnetoresistance compound EuB5.99C0.01|Ivan Batko,Marianna Batkova,Vinh Hung Tran,Uwe Keiderling,Volodimir Filipov###
(1677198, 1677202)
Evidence formagnetic phase separation in colossal magnetoresistance compound EuB5.99C0.01.
Featurization terminated normally.
0,0,0,0,0.8557142857142858,0.0014285714285714286,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuB5.99C0.01
###Evidence formagnetic phase separation in colossal magnetoresistance compound EuB5.99C0.01|Ivan Batko,Marianna Batkova,Vinh Hung Tran,Uwe Keiderling,Volodimir Filipov###
(1677205, 1677209)
 EuB5.99C0.01 is a low-carrier density ferromagnet that is believed to beintrinsically inhomogeneous due to fluctuations of carbon content.
Featurization terminated normally.
0,0,0,0,0.8557142857142858,0.0014285714285714286,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Evidence formagnetic phase separation in colossal magnetoresistance compound EuB5.99C0.01|Ivan Batko,Marianna Batkova,Vinh Hung Tran,Uwe Keiderling,Volodimir Filipov###
(1677251, 1677251)
 Inaccordance with our previous studies, electric trasport of EuB5.99C0.01 closeabove temperature of the bulk ferromagnetic (FM) ordering is governed bymagnetic polarons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuB5.99C0.01
###Evidence formagnetic phase separation in colossal magnetoresistance compound EuB5.99C0.01|Ivan Batko,Marianna Batkova,Vinh Hung Tran,Uwe Keiderling,Volodimir Filipov###
(1677271, 1677275)
 Inaccordance with our previous studies, electric trasport of EuB5.99C0.01 closeabove temperature of the bulk ferromagnetic (FM) ordering is governed bymagnetic polarons.
Featurization terminated normally.
0,0,0,0,0.8557142857142858,0.0014285714285714286,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Evidence formagnetic phase separation in colossal magnetoresistance compound EuB5.99C0.01|Ivan Batko,Marianna Batkova,Vinh Hung Tran,Uwe Keiderling,Volodimir Filipov###
(1677293, 1677293)
 Inaccordance with our previous studies, electric trasport of EuB5.99C0.01 closeabove temperature of the bulk ferromagnetic (FM) ordering is governed bymagnetic polarons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Evidence formagnetic phase separation in colossal magnetoresistance compound EuB5.99C0.01|Ivan Batko,Marianna Batkova,Vinh Hung Tran,Uwe Keiderling,Volodimir Filipov###
(1677323, 1677323)
 Carbon-rich regions are incompatible with FM<missing VAR> phase andtherefore they act as spacers preventing magnetic polarons to link, to form FM<missing VAR>clusters, and eventually to percolate and establish a (homogoneous) bulk FM<missing VAR>state in this compound, what consequently causes additional (magneto)resistanceincrease.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Evidence formagnetic phase separation in colossal magnetoresistance compound EuB5.99C0.01|Ivan Batko,Marianna Batkova,Vinh Hung Tran,Uwe Keiderling,Volodimir Filipov###
(1677356, 1677356)
 Carbon-rich regions are incompatible with FM<missing VAR> phase andtherefore they act as spacers preventing magnetic polarons to link, to form FM<missing VAR>clusters, and eventually to percolate and establish a (homogoneous) bulk FM<missing VAR>state in this compound, what consequently causes additional (magneto)resistanceincrease.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Evidence formagnetic phase separation in colossal magnetoresistance compound EuB5.99C0.01|Ivan Batko,Marianna Batkova,Vinh Hung Tran,Uwe Keiderling,Volodimir Filipov###
(1677383, 1677383)
 Carbon-rich regions are incompatible with FM<missing VAR> phase andtherefore they act as spacers preventing magnetic polarons to link, to form FM<missing VAR>clusters, and eventually to percolate and establish a (homogoneous) bulk FM<missing VAR>state in this compound, what consequently causes additional (magneto)resistanceincrease.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Evidence formagnetic phase separation in colossal magnetoresistance compound EuB5.99C0.01|Ivan Batko,Marianna Batkova,Vinh Hung Tran,Uwe Keiderling,Volodimir Filipov###
(1677425, 1677425)
 Below the temperature of the bulk FM<missing VAR> ordering, carbon-rich regionsgive rise to helimagnetic domains, which are responsible for an additionalscattering term in the electrical resistivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuB5.99C0.01
###Evidence formagnetic phase separation in colossal magnetoresistance compound EuB5.99C0.01|Ivan Batko,Marianna Batkova,Vinh Hung Tran,Uwe Keiderling,Volodimir Filipov###
(1677505, 1677509)
 Unfortunately, there has notbeen provided any direct evidence for magnetic phase separation in EuB5.99C0.01yet.
Featurization terminated normally.
0,0,0,0,0.8557142857142858,0.0014285714285714286,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuB5.99C0.01
###Evidence formagnetic phase separation in colossal magnetoresistance compound EuB5.99C0.01|Ivan Batko,Marianna Batkova,Vinh Hung Tran,Uwe Keiderling,Volodimir Filipov###
(1677595, 1677599)
 Here reported results of electrical, heat capacity, Hall resistivity andsmall-angle neutron scattering studies bring evidence for formation of mixedmagnetic structure, and provide consistent support for the previously proposedscenario of the magnetoresistance enhancement in EuB5.99C0.01.
Featurization terminated normally.
0,0,0,0,0.8557142857142858,0.0014285714285714286,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

KCo2As2
###Physical properties and electronic structure of single-crystal KCo$_2$As$_2$|D. J. Campbell,B. Wilfong,M. P. Zic,G. Levy,M. X. Na,T. M. Pedersen,S. Gorovikov,P. Y. Zavalij,S. Zhdanovich,A. Damascelli,E. E. Rodriguez,J. Paglione###
(1677626, 1677630)
Physical properties and electronic structure of single-crystal KCo2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 2, 'K', 2],[158.0, 7.3, 'mJ', 3],[297.0, 200, '%', 5]

KCo2As2
###Physical properties and electronic structure of single-crystal KCo$_2$As$_2$|D. J. Campbell,B. Wilfong,M. P. Zic,G. Levy,M. X. Na,T. M. Pedersen,S. Gorovikov,P. Y. Zavalij,S. Zhdanovich,A. Damascelli,E. E. Rodriguez,J. Paglione###
(1677649, 1677653)
 We present a method for producing high quality KCo2As2 crystals, stable inair and suitable for a variety of measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 2, 'K', 1],[135.0, 7.3, 'mJ', 2],[274.0, 200, '%', 4]

K2
###Physical properties and electronic structure of single-crystal KCo$_2$As$_2$|D. J. Campbell,B. Wilfong,M. P. Zic,G. Levy,M. X. Na,T. M. Pedersen,S. Gorovikov,P. Y. Zavalij,S. Zhdanovich,A. Damascelli,E. E. Rodriguez,J. Paglione###
(1677792, 1677793)
Residual resistivity values approaching 0.25 muOmegacm are representativeof the high quality and low impurity content, and a Sommerfeld coefficientgamma  7.3 mJ/mol K2 signifies weaker correlations than the Fe-basedcounterparts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 2, 'K', 1],[4.0, 7.3, 'mJ', 0],[134.0, 200, '%', 2]

Fe
###Physical properties and electronic structure of single-crystal KCo$_2$As$_2$|D. J. Campbell,B. Wilfong,M. P. Zic,G. Levy,M. X. Na,T. M. Pedersen,S. Gorovikov,P. Y. Zavalij,S. Zhdanovich,A. Damascelli,E. E. Rodriguez,J. Paglione###
(1677805, 1677805)
Residual resistivity values approaching 0.25 muOmegacm are representativeof the high quality and low impurity content, and a Sommerfeld coefficientgamma  7.3 mJ/mol K2 signifies weaker correlations than the Fe-basedcounterparts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 2, 'K', 1],[17.0, 7.3, 'mJ', 0],[122.0, 200, '%', 2]

ThCr2Si2
###Physical properties and electronic structure of single-crystal KCo$_2$As$_2$|D. J. Campbell,B. Wilfong,M. P. Zic,G. Levy,M. X. Na,T. M. Pedersen,S. Gorovikov,P. Y. Zavalij,S. Zhdanovich,A. Damascelli,E. E. Rodriguez,J. Paglione###
(1677907, 1677911)
 Together with Hall effect measurements, angle-resolvedphotoemission experiments reveal a Fermi surface consisting of electron pocketsat the center and corner of the Brillouin zone, in line with theoreticalpredictions and in contrast to the mixed carrier types of other pnictides withthe ThCr2Si2 structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0
[170.0, 2, 'K', 2],[119.0, 7.3, 'mJ', 1],[16.0, 200, '%', 1]

Co1-xMn
###High tunnel magnetoresistance and magnetism in metastable bcc Co$_{1-x}$Mn$_x$-based magnetic tunnel junctions|Kazuma Kunimatsu,Tufan Roy,Jun Okabayashi,Kelvin Elphick,Tomoki Tsuchiya,Tomohiro Ichinose,Masahito Tsujikawa,Atsufumi Hirohata,Masafumi Shirai,Shigemi Mizukami###
(1678018, 1678022)
High tunnel magnetoresistance and magnetism in metastable bcc Co1-xMnx<missing VAR>-based magnetic tunnel junctions.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[124.0, 200, '%', 3],[128.0, 600, '%', 3],[133.0, 300, 'K', 3],[162.0, 0.25, 'bcc', 3],[186.0, 13, ',', 6],[311.0, 0.5, 'with', 8],[442.0, 0.37, ',', 11],[457.0, 620, '%', 11],[461.0, 229, '%', 11],[467.0, 450, '%', 11],[471.0, 194, '%', 11],[476.0, 10, 'K', 11]

Co
###High tunnel magnetoresistance and magnetism in metastable bcc Co$_{1-x}$Mn$_x$-based magnetic tunnel junctions|Kazuma Kunimatsu,Tufan Roy,Jun Okabayashi,Kelvin Elphick,Tomoki Tsuchiya,Tomohiro Ichinose,Masahito Tsujikawa,Atsufumi Hirohata,Masafumi Shirai,Shigemi Mizukami###
(1678034, 1678034)
 Co-rich Co1-xMnx<missing VAR> alloys have hcp or fcc disordered phases and thoseferromagnetic orderings are significantly deteriorated with increasing Mnconcentration x<missing VAR> in bulk.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 200, '%', 2],[116.0, 600, '%', 2],[121.0, 300, 'K', 2],[150.0, 0.25, 'bcc', 2],[174.0, 13, ',', 5],[299.0, 0.5, 'with', 7],[430.0, 0.37, ',', 10],[445.0, 620, '%', 10],[449.0, 229, '%', 10],[455.0, 450, '%', 10],[459.0, 194, '%', 10],[464.0, 10, 'K', 10]

Co1-xMn
###High tunnel magnetoresistance and magnetism in metastable bcc Co$_{1-x}$Mn$_x$-based magnetic tunnel junctions|Kazuma Kunimatsu,Tufan Roy,Jun Okabayashi,Kelvin Elphick,Tomoki Tsuchiya,Tomohiro Ichinose,Masahito Tsujikawa,Atsufumi Hirohata,Masafumi Shirai,Shigemi Mizukami###
(1678038, 1678042)
 Co-rich Co1-xMnx<missing VAR> alloys have hcp or fcc disordered phases and thoseferromagnetic orderings are significantly deteriorated with increasing Mnconcentration x<missing VAR> in bulk.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[104.0, 200, '%', 2],[108.0, 600, '%', 2],[113.0, 300, 'K', 2],[142.0, 0.25, 'bcc', 2],[166.0, 13, ',', 5],[291.0, 0.5, 'with', 7],[422.0, 0.37, ',', 10],[437.0, 620, '%', 10],[441.0, 229, '%', 10],[447.0, 450, '%', 10],[451.0, 194, '%', 10],[456.0, 10, 'K', 10]

Mn
###High tunnel magnetoresistance and magnetism in metastable bcc Co$_{1-x}$Mn$_x$-based magnetic tunnel junctions|Kazuma Kunimatsu,Tufan Roy,Jun Okabayashi,Kelvin Elphick,Tomoki Tsuchiya,Tomohiro Ichinose,Masahito Tsujikawa,Atsufumi Hirohata,Masafumi Shirai,Shigemi Mizukami###
(1678078, 1678078)
 Co-rich Co1-xMnx<missing VAR> alloys have hcp or fcc disordered phases and thoseferromagnetic orderings are significantly deteriorated with increasing Mnconcentration x<missing VAR> in bulk.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 200, '%', 2],[72.0, 600, '%', 2],[77.0, 300, 'K', 2],[106.0, 0.25, 'bcc', 2],[130.0, 13, ',', 5],[255.0, 0.5, 'with', 7],[386.0, 0.37, ',', 10],[401.0, 620, '%', 10],[405.0, 229, '%', 10],[411.0, 450, '%', 10],[415.0, 194, '%', 10],[420.0, 10, 'K', 10]

K
###High tunnel magnetoresistance and magnetism in metastable bcc Co$_{1-x}$Mn$_x$-based magnetic tunnel junctions|Kazuma Kunimatsu,Tufan Roy,Jun Okabayashi,Kelvin Elphick,Tomoki Tsuchiya,Tomohiro Ichinose,Masahito Tsujikawa,Atsufumi Hirohata,Masafumi Shirai,Shigemi Mizukami###
(1678160, 1678160)
, high tunnel magnetoresistance (TMR)ratio of more than 200% (600%) at 300 K (10 K) in magnetic tunnel junctions(MTJs) with the x<missing VAR>  0.25 bcc alloy electrodes [Kunimatsu et al.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 200, '%', 0],[10.0, 600, '%', 0],[5.0, 300, 'K', 0],[24.0, 0.25, 'bcc', 0],[48.0, 13, ',', 3],[173.0, 0.5, 'with', 5],[304.0, 0.37, ',', 8],[319.0, 620, '%', 8],[323.0, 229, '%', 8],[329.0, 450, '%', 8],[333.0, 194, '%', 8],[338.0, 10, 'K', 8]

Co1-xMn
###High tunnel magnetoresistance and magnetism in metastable bcc Co$_{1-x}$Mn$_x$-based magnetic tunnel junctions|Kazuma Kunimatsu,Tufan Roy,Jun Okabayashi,Kelvin Elphick,Tomoki Tsuchiya,Tomohiro Ichinose,Masahito Tsujikawa,Atsufumi Hirohata,Masafumi Shirai,Shigemi Mizukami###
(1678298, 1678302)
 The singlephase bcc Co1-xMnx<missing VAR>(001) films were pseudomorphically grown on Cr(001)for 0.14 < x<missing VAR> < 0.50 with a sputtering technique.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[152.0, 200, '%', 5],[148.0, 600, '%', 5],[143.0, 300, 'K', 5],[114.0, 0.25, 'bcc', 5],[90.0, 13, ',', 2],[31.0, 0.5, 'with', 0],[162.0, 0.37, ',', 3],[177.0, 620, '%', 3],[181.0, 229, '%', 3],[187.0, 450, '%', 3],[191.0, 194, '%', 3],[196.0, 10, 'K', 3]

Co
###High tunnel magnetoresistance and magnetism in metastable bcc Co$_{1-x}$Mn$_x$-based magnetic tunnel junctions|Kazuma Kunimatsu,Tufan Roy,Jun Okabayashi,Kelvin Elphick,Tomoki Tsuchiya,Tomohiro Ichinose,Masahito Tsujikawa,Atsufumi Hirohata,Masafumi Shirai,Shigemi Mizukami###
(1678359, 1678359)
 The magnetization was largerthan that of pure Co for x<missing VAR>  0.14-0.25 and deceased with further increasingx<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[213.0, 200, '%', 6],[209.0, 600, '%', 6],[204.0, 300, 'K', 6],[175.0, 0.25, 'bcc', 6],[151.0, 13, ',', 3],[26.0, 0.5, 'with', 1],[105.0, 0.37, ',', 2],[120.0, 620, '%', 2],[124.0, 229, '%', 2],[130.0, 450, '%', 2],[134.0, 194, '%', 2],[139.0, 10, 'K', 2]

Mn
###High tunnel magnetoresistance and magnetism in metastable bcc Co$_{1-x}$Mn$_x$-based magnetic tunnel junctions|Kazuma Kunimatsu,Tufan Roy,Jun Okabayashi,Kelvin Elphick,Tomoki Tsuchiya,Tomohiro Ichinose,Masahito Tsujikawa,Atsufumi Hirohata,Masafumi Shirai,Shigemi Mizukami###
(1678409, 1678409)
 This behavior mainly stemmed from the composition dependence of magneticmoment of Mn that exceeded 2 mu B at the maximum, unveiled by X<missing VAR>-raymagnetic circular dichroism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[263.0, 200, '%', 7],[259.0, 600, '%', 7],[254.0, 300, 'K', 7],[225.0, 0.25, 'bcc', 7],[201.0, 13, ',', 4],[76.0, 0.5, 'with', 2],[55.0, 0.37, ',', 1],[70.0, 620, '%', 1],[74.0, 229, '%', 1],[80.0, 450, '%', 1],[84.0, 194, '%', 1],[89.0, 10, 'K', 1]

B
###High tunnel magnetoresistance and magnetism in metastable bcc Co$_{1-x}$Mn$_x$-based magnetic tunnel junctions|Kazuma Kunimatsu,Tufan Roy,Jun Okabayashi,Kelvin Elphick,Tomoki Tsuchiya,Tomohiro Ichinose,Masahito Tsujikawa,Atsufumi Hirohata,Masafumi Shirai,Shigemi Mizukami###
(1678419, 1678419)
 This behavior mainly stemmed from the composition dependence of magneticmoment of Mn that exceeded 2 mu B at the maximum, unveiled by X<missing VAR>-raymagnetic circular dichroism.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[273.0, 200, '%', 7],[269.0, 600, '%', 7],[264.0, 300, 'K', 7],[235.0, 0.25, 'bcc', 7],[211.0, 13, ',', 4],[86.0, 0.5, 'with', 2],[45.0, 0.37, ',', 1],[60.0, 620, '%', 1],[64.0, 229, '%', 1],[70.0, 450, '%', 1],[74.0, 194, '%', 1],[79.0, 10, 'K', 1]

K
###High tunnel magnetoresistance and magnetism in metastable bcc Co$_{1-x}$Mn$_x$-based magnetic tunnel junctions|Kazuma Kunimatsu,Tufan Roy,Jun Okabayashi,Kelvin Elphick,Tomoki Tsuchiya,Tomohiro Ichinose,Masahito Tsujikawa,Atsufumi Hirohata,Masafumi Shirai,Shigemi Mizukami###
(1678503, 1678503)
 Correspondingly, within the range of 0.25 < x<missing VAR> <0.37, the TMR ratio decreased from 620% (229%) to 450% (194%) at 10 K (300 K)as x<missing VAR> increased.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[357.0, 200, '%', 8],[353.0, 600, '%', 8],[348.0, 300, 'K', 8],[319.0, 0.25, 'bcc', 8],[295.0, 13, ',', 5],[170.0, 0.5, 'with', 3],[39.0, 0.37, ',', 0],[24.0, 620, '%', 0],[20.0, 229, '%', 0],[14.0, 450, '%', 0],[10.0, 194, '%', 0],[5.0, 10, 'K', 0]

In
###Lattice Softening in Metastable bcc CoxMn100-x(001) Ferromagnetic Layers for a Strain-Less Magnetic Tunnel Junction|Kelvin Elphick,Kenta Yoshida,Tufan Roy,Tomohiro Ichinose,Kazuma Kunimatsu,Tomoki Tsuchiya,Masahito Tsujikawa,Yasuyoshi Nagai,Shigemi Mizukami,Masafumi Shirai,Atsufumi Hirohata###
(1678613, 1678613)
 In spintronics, one of the long standing questions is why the MgO-basedmagnetic tunnel junction (MTJ) is almost the only option to achieve a largetunnelling magnetoresistance (TMR) ratio at room temperature (RT) but not aslarge as the theoretical prediction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[190.0, 66, ',', 2],[193.0, 75, ',', 2],[195.0, 83, 'and', 2],[267.0, 83, 'with', 3],[281.0, 229, '%', 3],[338.0, 86, ',', 4],[371.0, 142, '%', 4]

MgO
###Lattice Softening in Metastable bcc CoxMn100-x(001) Ferromagnetic Layers for a Strain-Less Magnetic Tunnel Junction|Kelvin Elphick,Kenta Yoshida,Tufan Roy,Tomohiro Ichinose,Kazuma Kunimatsu,Tomoki Tsuchiya,Masahito Tsujikawa,Yasuyoshi Nagai,Shigemi Mizukami,Masafumi Shirai,Atsufumi Hirohata###
(1678636, 1678637)
 In spintronics, one of the long standing questions is why the MgO-basedmagnetic tunnel junction (MTJ) is almost the only option to achieve a largetunnelling magnetoresistance (TMR) ratio at room temperature (RT) but not aslarge as the theoretical prediction.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 66, ',', 2],[169.0, 75, ',', 2],[171.0, 83, 'and', 2],[243.0, 83, 'with', 3],[257.0, 229, '%', 3],[314.0, 86, ',', 4],[347.0, 142, '%', 4]

Mn100-x
###Lattice Softening in Metastable bcc CoxMn100-x(001) Ferromagnetic Layers for a Strain-Less Magnetic Tunnel Junction|Kelvin Elphick,Kenta Yoshida,Tufan Roy,Tomohiro Ichinose,Kazuma Kunimatsu,Tomoki Tsuchiya,Masahito Tsujikawa,Yasuyoshi Nagai,Shigemi Mizukami,Masafumi Shirai,Atsufumi Hirohata###
(1678748, 1678751)
 This study focuses on the development ofan almost strain-free MTJ using metastable bcc CoxMn100-x ferromagnetic films.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[52.0, 66, ',', 1],[55.0, 75, ',', 1],[57.0, 83, 'and', 1],[129.0, 83, 'with', 2],[143.0, 229, '%', 2],[200.0, 86, ',', 3],[233.0, 142, '%', 3]

Mn100-x/MgO
###Lattice Softening in Metastable bcc CoxMn100-x(001) Ferromagnetic Layers for a Strain-Less Magnetic Tunnel Junction|Kelvin Elphick,Kenta Yoshida,Tufan Roy,Tomohiro Ichinose,Kazuma Kunimatsu,Tomoki Tsuchiya,Masahito Tsujikawa,Yasuyoshi Nagai,Shigemi Mizukami,Masafumi Shirai,Atsufumi Hirohata###
(1678785, 1678791)
We have investigated the degree of crystallisation in MTJ consisting ofCoxMn100-x/MgO/CoxMn100-x (x<missing VAR>  66, 75, 83 and 86) in relation to their TMRratios.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[12.0, 66, ',', 0],[15.0, 75, ',', 0],[17.0, 83, 'and', 0],[89.0, 83, 'with', 1],[103.0, 229, '%', 1],[160.0, 86, ',', 2],[193.0, 142, '%', 2]

FeSe/SrTiO3
###Capping layer influence and isotropic in-plane upper critical field of the superconductivity at the FeSe/SrTiO3 interface|Yanan Li,Ziqiao Wang,Run Xiao,Qi Li,Ke Wang,Anthony Richardella,Jian Wang,Nitin Samarth###
(1679150, 1679156)
Capping layer influence and isotropic in-plane upper critical field of the superconductivity at the FeSe/SrTiO3 interface.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

FeSe/SrTiO3
###Capping layer influence and isotropic in-plane upper critical field of the superconductivity at the FeSe/SrTiO3 interface|Yanan Li,Ziqiao Wang,Run Xiao,Qi Li,Ke Wang,Anthony Richardella,Jian Wang,Nitin Samarth###
(1679175, 1679181)
 Understanding the superconductivity at the interface of FeSe/SrTiO3 is aproblem of great contemporary interest due to the significant increase incritical temperature (Tc) compared to that of bulk FeSe, as well as thepossibility of an unconventional pairing mechanism and topologicalsuperconductivity.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

(Tc)
###Capping layer influence and isotropic in-plane upper critical field of the superconductivity at the FeSe/SrTiO3 interface|Yanan Li,Ziqiao Wang,Run Xiao,Qi Li,Ke Wang,Anthony Richardella,Jian Wang,Nitin Samarth###
(1679215, 1679217)
 Understanding the superconductivity at the interface of FeSe/SrTiO3 is aproblem of great contemporary interest due to the significant increase incritical temperature (Tc) compared to that of bulk FeSe, as well as thepossibility of an unconventional pairing mechanism and topologicalsuperconductivity.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeSe
###Capping layer influence and isotropic in-plane upper critical field of the superconductivity at the FeSe/SrTiO3 interface|Yanan Li,Ziqiao Wang,Run Xiao,Qi Li,Ke Wang,Anthony Richardella,Jian Wang,Nitin Samarth###
(1679229, 1679230)
 Understanding the superconductivity at the interface of FeSe/SrTiO3 is aproblem of great contemporary interest due to the significant increase incritical temperature (Tc) compared to that of bulk FeSe, as well as thepossibility of an unconventional pairing mechanism and topologicalsuperconductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeSe
###Capping layer influence and isotropic in-plane upper critical field of the superconductivity at the FeSe/SrTiO3 interface|Yanan Li,Ziqiao Wang,Run Xiao,Qi Li,Ke Wang,Anthony Richardella,Jian Wang,Nitin Samarth###
(1679297, 1679298)
 We report a study of the influence of a capping layer onsuperconductivity in thin films of FeSe grown on SrTiO3 using molecular beamepitaxy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Capping layer influence and isotropic in-plane upper critical field of the superconductivity at the FeSe/SrTiO3 interface|Yanan Li,Ziqiao Wang,Run Xiao,Qi Li,Ke Wang,Anthony Richardella,Jian Wang,Nitin Samarth###
(1679304, 1679307)
 We report a study of the influence of a capping layer onsuperconductivity in thin films of FeSe grown on SrTiO3 using molecular beamepitaxy.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeSe
###Capping layer influence and isotropic in-plane upper critical field of the superconductivity at the FeSe/SrTiO3 interface|Yanan Li,Ziqiao Wang,Run Xiao,Qi Li,Ke Wang,Anthony Richardella,Jian Wang,Nitin Samarth###
(1679381, 1679382)
 We used in vacuo four-probe electrical resistance measurements and exsitu magneto-transport measurements to examine the effect of three cappinglayers that provide distinctly different charge transfer into FeSe compoundFeTe, non-metallic Te, and metallic Zr.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeTe
###Capping layer influence and isotropic in-plane upper critical field of the superconductivity at the FeSe/SrTiO3 interface|Yanan Li,Ziqiao Wang,Run Xiao,Qi Li,Ke Wang,Anthony Richardella,Jian Wang,Nitin Samarth###
(1679387, 1679388)
 We used in vacuo four-probe electrical resistance measurements and exsitu magneto-transport measurements to examine the effect of three cappinglayers that provide distinctly different charge transfer into FeSe compoundFeTe, non-metallic Te, and metallic Zr.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Te
###Capping layer influence and isotropic in-plane upper critical field of the superconductivity at the FeSe/SrTiO3 interface|Yanan Li,Ziqiao Wang,Run Xiao,Qi Li,Ke Wang,Anthony Richardella,Jian Wang,Nitin Samarth###
(1679395, 1679395)
 We used in vacuo four-probe electrical resistance measurements and exsitu magneto-transport measurements to examine the effect of three cappinglayers that provide distinctly different charge transfer into FeSe compoundFeTe, non-metallic Te, and metallic Zr.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Zr
###Capping layer influence and isotropic in-plane upper critical field of the superconductivity at the FeSe/SrTiO3 interface|Yanan Li,Ziqiao Wang,Run Xiao,Qi Li,Ke Wang,Anthony Richardella,Jian Wang,Nitin Samarth###
(1679402, 1679402)
 We used in vacuo four-probe electrical resistance measurements and exsitu magneto-transport measurements to examine the effect of three cappinglayers that provide distinctly different charge transfer into FeSe compoundFeTe, non-metallic Te, and metallic Zr.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeTe
###Capping layer influence and isotropic in-plane upper critical field of the superconductivity at the FeSe/SrTiO3 interface|Yanan Li,Ziqiao Wang,Run Xiao,Qi Li,Ke Wang,Anthony Richardella,Jian Wang,Nitin Samarth###
(1679413, 1679414)
 Our results show that FeTe provides anoptimal cap that barely influences the inherent Tc found in pristineFeSe/SrTiO3, while the transfer of holes from a non-metallic Te cap completelysuppresses superconductivity and leads to insulating behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###Capping layer influence and isotropic in-plane upper critical field of the superconductivity at the FeSe/SrTiO3 interface|Yanan Li,Ziqiao Wang,Run Xiao,Qi Li,Ke Wang,Anthony Richardella,Jian Wang,Nitin Samarth###
(1679435, 1679435)
 Our results show that FeTe provides anoptimal cap that barely influences the inherent Tc found in pristineFeSe/SrTiO3, while the transfer of holes from a non-metallic Te cap completelysuppresses superconductivity and leads to insulating behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeSe/SrTiO3
###Capping layer influence and isotropic in-plane upper critical field of the superconductivity at the FeSe/SrTiO3 interface|Yanan Li,Ziqiao Wang,Run Xiao,Qi Li,Ke Wang,Anthony Richardella,Jian Wang,Nitin Samarth###
(1679444, 1679450)
 Our results show that FeTe provides anoptimal cap that barely influences the inherent Tc found in pristineFeSe/SrTiO3, while the transfer of holes from a non-metallic Te cap completelysuppresses superconductivity and leads to insulating behavior.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Te
###Capping layer influence and isotropic in-plane upper critical field of the superconductivity at the FeSe/SrTiO3 interface|Yanan Li,Ziqiao Wang,Run Xiao,Qi Li,Ke Wang,Anthony Richardella,Jian Wang,Nitin Samarth###
(1679471, 1679471)
 Our results show that FeTe provides anoptimal cap that barely influences the inherent Tc found in pristineFeSe/SrTiO3, while the transfer of holes from a non-metallic Te cap completelysuppresses superconductivity and leads to insulating behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeTe
###Capping layer influence and isotropic in-plane upper critical field of the superconductivity at the FeSe/SrTiO3 interface|Yanan Li,Ziqiao Wang,Run Xiao,Qi Li,Ke Wang,Anthony Richardella,Jian Wang,Nitin Samarth###
(1679511, 1679512)
 Finally, we usedex situ magnetoresistance measurements in FeTe-capped FeSe films to extract theangular dependence of the in-plane upper critical magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeSe
###Capping layer influence and isotropic in-plane upper critical field of the superconductivity at the FeSe/SrTiO3 interface|Yanan Li,Ziqiao Wang,Run Xiao,Qi Li,Ke Wang,Anthony Richardella,Jian Wang,Nitin Samarth###
(1679516, 1679517)
 Finally, we usedex situ magnetoresistance measurements in FeTe-capped FeSe films to extract theangular dependence of the in-plane upper critical magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeSe
###Capping layer influence and isotropic in-plane upper critical field of the superconductivity at the FeSe/SrTiO3 interface|Yanan Li,Ziqiao Wang,Run Xiao,Qi Li,Ke Wang,Anthony Richardella,Jian Wang,Nitin Samarth###
(1679601, 1679602)
 Ourobservations reveal an almost isotropic in-plane upper critical field,providing insight into the symmetry and pairing mechanism of high temperaturesuperconductivity in FeSe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Landau Quantization and Highly Mobile Fermions in an Insulator|Pengjie Wang,Guo Yu,Yanyu Jia,Michael Onyszczak,F. Alexandre Cevallos,Shiming Lei,Sebastian Klemenz,Kenji Watanabe,Takashi Taniguchi,Robert J. Cava,Leslie M. Schoop,Sanfeng Wu###
(1679632, 1679632)
 In strongly correlated materials, quasiparticle excitations can carryfractional quantum numbers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[278.0, 0.5, 'tesla', 6]

(WTe2)
###Landau Quantization and Highly Mobile Fermions in an Insulator|Pengjie Wang,Guo Yu,Yanyu Jia,Michael Onyszczak,F. Alexandre Cevallos,Shiming Lei,Sebastian Klemenz,Kenji Watanabe,Takashi Taniguchi,Robert J. Cava,Leslie M. Schoop,Sanfeng Wu###
(1679834, 1679838)
, monolayer tungsten ditelluride (WTe2), a large gaptopological insulator.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 0.5, 'tesla', 1]

WTe2
###Landau Quantization and Highly Mobile Fermions in an Insulator|Pengjie Wang,Guo Yu,Yanyu Jia,Michael Onyszczak,F. Alexandre Cevallos,Shiming Lei,Sebastian Klemenz,Kenji Watanabe,Takashi Taniguchi,Robert J. Cava,Leslie M. Schoop,Sanfeng Wu###
(1680074, 1680076)
 Our experiments call for further investigationof the highly unusual ground state of the WTe2 monolayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 0.5, 'tesla', 4]

Co
###Broadband terahertz probes of anisotropic magnetoresistance disentangle extrinsic and intrinsic contributions|Lukáš Nadvorník,Martin Borchert,Liane Brandt,Richard Schlitz,Koen A. de Mare,Karel Výborný,Ingrid Mertig,Gerhard Jakob,Matthias Kläui,Sebastian T. B. Goennenwein,Martin Wolf,Georg Woltersdorf,Tobias Kampfrath###
(1680284, 1680284)
Here, we measure AMR of polycrystalline thin films of the standard ferromagnetsCo, Ni, Ni81Fe19 and Ni50Fe50 over the frequency range from D<missing VAR>C to 28 THz.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 28, 'THz', 0],[194.0, 28, 'THz', 3],[226.0, 1, '%', 3]

Ni
###Broadband terahertz probes of anisotropic magnetoresistance disentangle extrinsic and intrinsic contributions|Lukáš Nadvorník,Martin Borchert,Liane Brandt,Richard Schlitz,Koen A. de Mare,Karel Výborný,Ingrid Mertig,Gerhard Jakob,Matthias Kläui,Sebastian T. B. Goennenwein,Martin Wolf,Georg Woltersdorf,Tobias Kampfrath###
(1680287, 1680287)
Here, we measure AMR of polycrystalline thin films of the standard ferromagnetsCo, Ni, Ni81Fe19 and Ni50Fe50 over the frequency range from D<missing VAR>C to 28 THz.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 28, 'THz', 0],[191.0, 28, 'THz', 3],[223.0, 1, '%', 3]

Ni81Fe19
###Broadband terahertz probes of anisotropic magnetoresistance disentangle extrinsic and intrinsic contributions|Lukáš Nadvorník,Martin Borchert,Liane Brandt,Richard Schlitz,Koen A. de Mare,Karel Výborný,Ingrid Mertig,Gerhard Jakob,Matthias Kläui,Sebastian T. B. Goennenwein,Martin Wolf,Georg Woltersdorf,Tobias Kampfrath###
(1680290, 1680293)
Here, we measure AMR of polycrystalline thin films of the standard ferromagnetsCo, Ni, Ni81Fe19 and Ni50Fe50 over the frequency range from D<missing VAR>C to 28 THz.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.19,0,0.81,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 28, 'THz', 0],[185.0, 28, 'THz', 3],[217.0, 1, '%', 3]

Ni50Fe50
###Broadband terahertz probes of anisotropic magnetoresistance disentangle extrinsic and intrinsic contributions|Lukáš Nadvorník,Martin Borchert,Liane Brandt,Richard Schlitz,Koen A. de Mare,Karel Výborný,Ingrid Mertig,Gerhard Jakob,Matthias Kläui,Sebastian T. B. Goennenwein,Martin Wolf,Georg Woltersdorf,Tobias Kampfrath###
(1680297, 1680300)
Here, we measure AMR of polycrystalline thin films of the standard ferromagnetsCo, Ni, Ni81Fe19 and Ni50Fe50 over the frequency range from D<missing VAR>C to 28 THz.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 28, 'THz', 0],[178.0, 28, 'THz', 3],[210.0, 1, '%', 3]

C
###Broadband terahertz probes of anisotropic magnetoresistance disentangle extrinsic and intrinsic contributions|Lukáš Nadvorník,Martin Borchert,Liane Brandt,Richard Schlitz,Koen A. de Mare,Karel Výborný,Ingrid Mertig,Gerhard Jakob,Matthias Kläui,Sebastian T. B. Goennenwein,Martin Wolf,Georg Woltersdorf,Tobias Kampfrath###
(1680313, 1680313)
Here, we measure AMR of polycrystalline thin films of the standard ferromagnetsCo, Ni, Ni81Fe19 and Ni50Fe50 over the frequency range from D<missing VAR>C to 28 THz.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 28, 'THz', 0],[165.0, 28, 'THz', 3],[197.0, 1, '%', 3]

Ni
###Broadband terahertz probes of anisotropic magnetoresistance disentangle extrinsic and intrinsic contributions|Lukáš Nadvorník,Martin Borchert,Liane Brandt,Richard Schlitz,Koen A. de Mare,Karel Výborný,Ingrid Mertig,Gerhard Jakob,Matthias Kläui,Sebastian T. B. Goennenwein,Martin Wolf,Georg Woltersdorf,Tobias Kampfrath###
(1680413, 1680413)
 Analysis of the T<missing VAR>Hz response based on Boltzmann transport theoryreveals that the AMR of the Ni, Ni81Fe19 and Ni50Fe50 samples is ofpredominantly extrinsic nature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 28, 'THz', 2],[65.0, 28, 'THz', 1],[97.0, 1, '%', 1]

Ni81Fe19
###Broadband terahertz probes of anisotropic magnetoresistance disentangle extrinsic and intrinsic contributions|Lukáš Nadvorník,Martin Borchert,Liane Brandt,Richard Schlitz,Koen A. de Mare,Karel Výborný,Ingrid Mertig,Gerhard Jakob,Matthias Kläui,Sebastian T. B. Goennenwein,Martin Wolf,Georg Woltersdorf,Tobias Kampfrath###
(1680416, 1680419)
 Analysis of the T<missing VAR>Hz response based on Boltzmann transport theoryreveals that the AMR of the Ni, Ni81Fe19 and Ni50Fe50 samples is ofpredominantly extrinsic nature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.19,0,0.81,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 28, 'THz', 2],[59.0, 28, 'THz', 1],[91.0, 1, '%', 1]

Ni50Fe50
###Broadband terahertz probes of anisotropic magnetoresistance disentangle extrinsic and intrinsic contributions|Lukáš Nadvorník,Martin Borchert,Liane Brandt,Richard Schlitz,Koen A. de Mare,Karel Výborný,Ingrid Mertig,Gerhard Jakob,Matthias Kläui,Sebastian T. B. Goennenwein,Martin Wolf,Georg Woltersdorf,Tobias Kampfrath###
(1680423, 1680426)
 Analysis of the T<missing VAR>Hz response based on Boltzmann transport theoryreveals that the AMR of the Ni, Ni81Fe19 and Ni50Fe50 samples is ofpredominantly extrinsic nature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 28, 'THz', 2],[52.0, 28, 'THz', 1],[84.0, 1, '%', 1]

Co
###Broadband terahertz probes of anisotropic magnetoresistance disentangle extrinsic and intrinsic contributions|Lukáš Nadvorník,Martin Borchert,Liane Brandt,Richard Schlitz,Koen A. de Mare,Karel Výborný,Ingrid Mertig,Gerhard Jakob,Matthias Kläui,Sebastian T. B. Goennenwein,Martin Wolf,Georg Woltersdorf,Tobias Kampfrath###
(1680447, 1680447)
 However, the Co thin film exhibits a sizeableintrinsic AMR contribution, which is constant up to 28 THz and amounts to morethan 2/3 of the D<missing VAR>C AMR contrast of 1%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 28, 'THz', 3],[31.0, 28, 'THz', 0],[63.0, 1, '%', 0]

C
###Broadband terahertz probes of anisotropic magnetoresistance disentangle extrinsic and intrinsic contributions|Lukáš Nadvorník,Martin Borchert,Liane Brandt,Richard Schlitz,Koen A. de Mare,Karel Výborný,Ingrid Mertig,Gerhard Jakob,Matthias Kläui,Sebastian T. B. Goennenwein,Martin Wolf,Georg Woltersdorf,Tobias Kampfrath###
(1680500, 1680500)
 However, the Co thin film exhibits a sizeableintrinsic AMR contribution, which is constant up to 28 THz and amounts to morethan 2/3 of the D<missing VAR>C AMR contrast of 1%.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[184.0, 28, 'THz', 3],[22.0, 28, 'THz', 0],[10.0, 1, '%', 0]

Co
###Broadband terahertz probes of anisotropic magnetoresistance disentangle extrinsic and intrinsic contributions|Lukáš Nadvorník,Martin Borchert,Liane Brandt,Richard Schlitz,Koen A. de Mare,Karel Výborný,Ingrid Mertig,Gerhard Jakob,Matthias Kläui,Sebastian T. B. Goennenwein,Martin Wolf,Georg Woltersdorf,Tobias Kampfrath###
(1680535, 1680535)
 These features are attributed to thehexagonal structure of the Co crystallites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[219.0, 28, 'THz', 4],[57.0, 28, 'THz', 1],[25.0, 1, '%', 1]

WTe2/Ti/CoFeB
###Spin torque gate magnetic field sensor|Hang Xie,Xin Chen,Ziyan Luo,Yihong Wu###
(1680964, 1680972)
 We verify the conceptusing the newly developed WTe2/Ti/CoFeB trilayer and demonstrate that thesensor can work linearly in the range of 3-10 Oe with negligible dc offset.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

SnTe
###Synthesis of narrow SnTe nanowires using alloy nanoparticles|Pengzi Liu,Hyeuk Jin Han,Julia Wei,David J. Hynek,James L. Hart,Myung Geun Han,Christie J. Trimble,James R. Williams,Yimei Zhu,Judy J. Cha###
(1681030, 1681031)
Synthesis of narrow SnTe nanowires using alloy nanoparticles.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 1, 'D', 3],[241.0, 85, 'nm', 5],[268.0, 240, 'nm', 5],[462.0, 1, 'D', 9]

(SnTe)
###Synthesis of narrow SnTe nanowires using alloy nanoparticles|Pengzi Liu,Hyeuk Jin Han,Julia Wei,David J. Hynek,James L. Hart,Myung Geun Han,Christie J. Trimble,James R. Williams,Yimei Zhu,Judy J. Cha###
(1681052, 1681055)
 Topological crystalline insulator tin telluride (SnTe) provides a richplayground to examine interactions of correlated electronic states, such asferroelectricity, topological surface states, and superconductivity.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 1, 'D', 2],[217.0, 85, 'nm', 4],[244.0, 240, 'nm', 4],[438.0, 1, 'D', 8]

SnTe
###Synthesis of narrow SnTe nanowires using alloy nanoparticles|Pengzi Liu,Hyeuk Jin Han,Julia Wei,David J. Hynek,James L. Hart,Myung Geun Han,Christie J. Trimble,James R. Williams,Yimei Zhu,Judy J. Cha###
(1681104, 1681105)
 MakingSnTe into nanowires further induces novel electronic states due toone-dimensional (1D) confinement effects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 1, 'D', 1],[167.0, 85, 'nm', 3],[194.0, 240, 'nm', 3],[388.0, 1, 'D', 7]

SnTe
###Synthesis of narrow SnTe nanowires using alloy nanoparticles|Pengzi Liu,Hyeuk Jin Han,Julia Wei,David J. Hynek,James L. Hart,Myung Geun Han,Christie J. Trimble,James R. Williams,Yimei Zhu,Judy J. Cha###
(1681151, 1681152)
 Thus, for transport measurements,SnTe nanowires must be made narrow in their diameters to ensure the 1Dconfinement and phase coherence of the topological surface electrons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 1, 'D', 0],[120.0, 85, 'nm', 2],[147.0, 240, 'nm', 2],[341.0, 1, 'D', 6]

SnTe
###Synthesis of narrow SnTe nanowires using alloy nanoparticles|Pengzi Liu,Hyeuk Jin Han,Julia Wei,David J. Hynek,James L. Hart,Myung Geun Han,Christie J. Trimble,James R. Williams,Yimei Zhu,Judy J. Cha###
(1681218, 1681219)
 Thisstudy reports a facile growth method to produce narrow SnTe nanowires with ahigh yield using alloy nanoparticles as growth catalysts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 1, 'D', 1],[53.0, 85, 'nm', 1],[80.0, 240, 'nm', 1],[274.0, 1, 'D', 5]

SnTe
###Synthesis of narrow SnTe nanowires using alloy nanoparticles|Pengzi Liu,Hyeuk Jin Han,Julia Wei,David J. Hynek,James L. Hart,Myung Geun Han,Christie J. Trimble,James R. Williams,Yimei Zhu,Judy J. Cha###
(1681256, 1681257)
 The average diameterof the SnTe nanowires grown using the alloy nanoparticles is 85 nm, nearly afactor of three reduction from the previous average diameter of 240 nm usinggold nanoparticles as growth catalysts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 1, 'D', 2],[15.0, 85, 'nm', 0],[42.0, 240, 'nm', 0],[236.0, 1, 'D', 4]

SnTe
###Synthesis of narrow SnTe nanowires using alloy nanoparticles|Pengzi Liu,Hyeuk Jin Han,Julia Wei,David J. Hynek,James L. Hart,Myung Geun Han,Christie J. Trimble,James R. Williams,Yimei Zhu,Judy J. Cha###
(1681364, 1681365)
 Particularly, the ferroelectric transition temperature forSnTe is observed to change systematically with the nanowire diameter.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[189.0, 1, 'D', 4],[92.0, 85, 'nm', 2],[65.0, 240, 'nm', 2],[128.0, 1, 'D', 2]

In
###Synthesis of narrow SnTe nanowires using alloy nanoparticles|Pengzi Liu,Hyeuk Jin Han,Julia Wei,David J. Hynek,James L. Hart,Myung Geun Han,Christie J. Trimble,James R. Williams,Yimei Zhu,Judy J. Cha###
(1681386, 1681386)
 In situcryogenic cooling of narrow SnTe nanowires in a transmission electronmicroscope directly reveals the cubic to rhombohedral structural transition,which is associated with the ferroelectric transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[211.0, 1, 'D', 5],[114.0, 85, 'nm', 3],[87.0, 240, 'nm', 3],[107.0, 1, 'D', 1]

SnTe
###Synthesis of narrow SnTe nanowires using alloy nanoparticles|Pengzi Liu,Hyeuk Jin Han,Julia Wei,David J. Hynek,James L. Hart,Myung Geun Han,Christie J. Trimble,James R. Williams,Yimei Zhu,Judy J. Cha###
(1681399, 1681400)
 In situcryogenic cooling of narrow SnTe nanowires in a transmission electronmicroscope directly reveals the cubic to rhombohedral structural transition,which is associated with the ferroelectric transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[224.0, 1, 'D', 5],[127.0, 85, 'nm', 3],[100.0, 240, 'nm', 3],[93.0, 1, 'D', 1]

SnTe
###Synthesis of narrow SnTe nanowires using alloy nanoparticles|Pengzi Liu,Hyeuk Jin Han,Julia Wei,David J. Hynek,James L. Hart,Myung Geun Han,Christie J. Trimble,James R. Williams,Yimei Zhu,Judy J. Cha###
(1681455, 1681456)
 Thus, these narrow SnTenanowires represent a model system to study electronic states arising from the1D<missing VAR> confinement, such as 1D topological superconductivity as well as a potentialmulti-band superconductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[280.0, 1, 'D', 6],[183.0, 85, 'nm', 4],[156.0, 240, 'nm', 4],[37.0, 1, 'D', 0]

H
###The electron-phonon coupling constant, the Fermi temperature and unconventional superconductivity in the carbonaceous sulfur hydride 190 K superconductor|E. F. Talantsev###
(1681608, 1681608)
 Recently, Snider et al (2020 Nature 586 373) reported on the observation ofsuperconductivity in highly-compressed carbonaceous sulfur hydride,Hx<missing VAR>(S,C)y<missing VAR>.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 190, 'K', 1],[30.0, 5, 'K', 1],[43.0, 280, 'K', 1],[150.0, 190, 'K', 6],[155.0, 210, 'GPa', 6],[176.0, 2.0, 'and', 6],[305.0, 190, 'K', 8],[424.0, 200, 'K', 9]

S
###The electron-phonon coupling constant, the Fermi temperature and unconventional superconductivity in the carbonaceous sulfur hydride 190 K superconductor|E. F. Talantsev###
(1681611, 1681611)
 Recently, Snider et al (2020 Nature 586 373) reported on the observation ofsuperconductivity in highly-compressed carbonaceous sulfur hydride,Hx<missing VAR>(S,C)y<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 190, 'K', 1],[27.0, 5, 'K', 1],[40.0, 280, 'K', 1],[147.0, 190, 'K', 6],[152.0, 210, 'GPa', 6],[173.0, 2.0, 'and', 6],[302.0, 190, 'K', 8],[421.0, 200, 'K', 9]

C
###The electron-phonon coupling constant, the Fermi temperature and unconventional superconductivity in the carbonaceous sulfur hydride 190 K superconductor|E. F. Talantsev###
(1681613, 1681613)
 Recently, Snider et al (2020 Nature 586 373) reported on the observation ofsuperconductivity in highly-compressed carbonaceous sulfur hydride,Hx<missing VAR>(S,C)y<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 190, 'K', 1],[25.0, 5, 'K', 1],[38.0, 280, 'K', 1],[145.0, 190, 'K', 6],[150.0, 210, 'GPa', 6],[171.0, 2.0, 'and', 6],[300.0, 190, 'K', 8],[419.0, 200, 'K', 9]

H
###The electron-phonon coupling constant, the Fermi temperature and unconventional superconductivity in the carbonaceous sulfur hydride 190 K superconductor|E. F. Talantsev###
(1681628, 1681628)
 The highest critical temperature in Hx<missing VAR>(S,C)y<missing VAR> by 5 Kexceeds previous record of Tc  280 K reported by Somayazulu et al (2019 Phys.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 190, 'K', 2],[10.0, 5, 'K', 0],[23.0, 280, 'K', 0],[130.0, 190, 'K', 5],[135.0, 210, 'GPa', 5],[156.0, 2.0, 'and', 5],[285.0, 190, 'K', 7],[404.0, 200, 'K', 8]

S
###The electron-phonon coupling constant, the Fermi temperature and unconventional superconductivity in the carbonaceous sulfur hydride 190 K superconductor|E. F. Talantsev###
(1681631, 1681631)
 The highest critical temperature in Hx<missing VAR>(S,C)y<missing VAR> by 5 Kexceeds previous record of Tc  280 K reported by Somayazulu et al (2019 Phys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 190, 'K', 2],[7.0, 5, 'K', 0],[20.0, 280, 'K', 0],[127.0, 190, 'K', 5],[132.0, 210, 'GPa', 5],[153.0, 2.0, 'and', 5],[282.0, 190, 'K', 7],[401.0, 200, 'K', 8]

C
###The electron-phonon coupling constant, the Fermi temperature and unconventional superconductivity in the carbonaceous sulfur hydride 190 K superconductor|E. F. Talantsev###
(1681633, 1681633)
 The highest critical temperature in Hx<missing VAR>(S,C)y<missing VAR> by 5 Kexceeds previous record of Tc  280 K reported by Somayazulu et al (2019 Phys.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 190, 'K', 2],[5.0, 5, 'K', 0],[18.0, 280, 'K', 0],[125.0, 190, 'K', 5],[130.0, 210, 'GPa', 5],[151.0, 2.0, 'and', 5],[280.0, 190, 'K', 7],[399.0, 200, 'K', 8]

Tc
###The electron-phonon coupling constant, the Fermi temperature and unconventional superconductivity in the carbonaceous sulfur hydride 190 K superconductor|E. F. Talantsev###
(1681649, 1681649)
 The highest critical temperature in Hx<missing VAR>(S,C)y<missing VAR> by 5 Kexceeds previous record of Tc  280 K reported by Somayazulu et al (2019 Phys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 190, 'K', 2],[11.0, 5, 'K', 0],[2.0, 280, 'K', 0],[109.0, 190, 'K', 5],[114.0, 210, 'GPa', 5],[135.0, 2.0, 'and', 5],[264.0, 190, 'K', 7],[383.0, 200, 'K', 8]

LaH10
###The electron-phonon coupling constant, the Fermi temperature and unconventional superconductivity in the carbonaceous sulfur hydride 190 K superconductor|E. F. Talantsev###
(1681687, 1681689)
 122 027001) for highly-compressed LaH10.
Featurization terminated normally.
0.9090909090909091,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.09090909090909091,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 190, 'K', 5],[49.0, 5, 'K', 3],[36.0, 280, 'K', 3],[69.0, 190, 'K', 2],[74.0, 210, 'GPa', 2],[95.0, 2.0, 'and', 2],[224.0, 190, 'K', 4],[343.0, 200, 'K', 5]

In
###The electron-phonon coupling constant, the Fermi temperature and unconventional superconductivity in the carbonaceous sulfur hydride 190 K superconductor|E. F. Talantsev###
(1681692, 1681692)
 In this paper weanalyze experimental temperature dependent magnetoresistance data, R(T,B),reported by Snider et al.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 190, 'K', 6],[54.0, 5, 'K', 4],[41.0, 280, 'K', 4],[66.0, 190, 'K', 1],[71.0, 210, 'GPa', 1],[92.0, 2.0, 'and', 1],[221.0, 190, 'K', 3],[340.0, 200, 'K', 4]

B
###The electron-phonon coupling constant, the Fermi temperature and unconventional superconductivity in the carbonaceous sulfur hydride 190 K superconductor|E. F. Talantsev###
(1681718, 1681718)
 In this paper weanalyze experimental temperature dependent magnetoresistance data, R(T,B),reported by Snider et al.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 190, 'K', 6],[80.0, 5, 'K', 4],[67.0, 280, 'K', 4],[40.0, 190, 'K', 1],[45.0, 210, 'GPa', 1],[66.0, 2.0, 'and', 1],[195.0, 190, 'K', 3],[314.0, 200, 'K', 4]

H
###The electron-phonon coupling constant, the Fermi temperature and unconventional superconductivity in the carbonaceous sulfur hydride 190 K superconductor|E. F. Talantsev###
(1681742, 1681742)
 The analysis shows that Hx<missing VAR>(S,C)y<missing VAR> compoundexhibited Tc  190 K (P  210 GPa) has the electron-phonon coupling constantlambdae<missing VAR>-ph  2.0 and the ratio of critical temperature, Tc, to theFermi temperature, Tf, in the range of 0.011 < Tc/Tf < 0.018.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[185.0, 190, 'K', 7],[104.0, 5, 'K', 5],[91.0, 280, 'K', 5],[16.0, 190, 'K', 0],[21.0, 210, 'GPa', 0],[42.0, 2.0, 'and', 0],[171.0, 190, 'K', 2],[290.0, 200, 'K', 3]

S
###The electron-phonon coupling constant, the Fermi temperature and unconventional superconductivity in the carbonaceous sulfur hydride 190 K superconductor|E. F. Talantsev###
(1681745, 1681745)
 The analysis shows that Hx<missing VAR>(S,C)y<missing VAR> compoundexhibited Tc  190 K (P  210 GPa) has the electron-phonon coupling constantlambdae<missing VAR>-ph  2.0 and the ratio of critical temperature, Tc, to theFermi temperature, Tf, in the range of 0.011 < Tc/Tf < 0.018.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 190, 'K', 7],[107.0, 5, 'K', 5],[94.0, 280, 'K', 5],[13.0, 190, 'K', 0],[18.0, 210, 'GPa', 0],[39.0, 2.0, 'and', 0],[168.0, 190, 'K', 2],[287.0, 200, 'K', 3]

C
###The electron-phonon coupling constant, the Fermi temperature and unconventional superconductivity in the carbonaceous sulfur hydride 190 K superconductor|E. F. Talantsev###
(1681747, 1681747)
 The analysis shows that Hx<missing VAR>(S,C)y<missing VAR> compoundexhibited Tc  190 K (P  210 GPa) has the electron-phonon coupling constantlambdae<missing VAR>-ph  2.0 and the ratio of critical temperature, Tc, to theFermi temperature, Tf, in the range of 0.011 < Tc/Tf < 0.018.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[190.0, 190, 'K', 7],[109.0, 5, 'K', 5],[96.0, 280, 'K', 5],[11.0, 190, 'K', 0],[16.0, 210, 'GPa', 0],[37.0, 2.0, 'and', 0],[166.0, 190, 'K', 2],[285.0, 200, 'K', 3]

Tc
###The electron-phonon coupling constant, the Fermi temperature and unconventional superconductivity in the carbonaceous sulfur hydride 190 K superconductor|E. F. Talantsev###
(1681756, 1681756)
 The analysis shows that Hx<missing VAR>(S,C)y<missing VAR> compoundexhibited Tc  190 K (P  210 GPa) has the electron-phonon coupling constantlambdae<missing VAR>-ph  2.0 and the ratio of critical temperature, Tc, to theFermi temperature, Tf, in the range of 0.011 < Tc/Tf < 0.018.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[199.0, 190, 'K', 7],[118.0, 5, 'K', 5],[105.0, 280, 'K', 5],[2.0, 190, 'K', 0],[7.0, 210, 'GPa', 0],[28.0, 2.0, 'and', 0],[157.0, 190, 'K', 2],[276.0, 200, 'K', 3]

P
###The electron-phonon coupling constant, the Fermi temperature and unconventional superconductivity in the carbonaceous sulfur hydride 190 K superconductor|E. F. Talantsev###
(1681761, 1681761)
 The analysis shows that Hx<missing VAR>(S,C)y<missing VAR> compoundexhibited Tc  190 K (P  210 GPa) has the electron-phonon coupling constantlambdae<missing VAR>-ph  2.0 and the ratio of critical temperature, Tc, to theFermi temperature, Tf, in the range of 0.011 < Tc/Tf < 0.018.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[204.0, 190, 'K', 7],[123.0, 5, 'K', 5],[110.0, 280, 'K', 5],[3.0, 190, 'K', 0],[2.0, 210, 'GPa', 0],[23.0, 2.0, 'and', 0],[152.0, 190, 'K', 2],[271.0, 200, 'K', 3]

Tc
###The electron-phonon coupling constant, the Fermi temperature and unconventional superconductivity in the carbonaceous sulfur hydride 190 K superconductor|E. F. Talantsev###
(1681797, 1681797)
 The analysis shows that Hx<missing VAR>(S,C)y<missing VAR> compoundexhibited Tc  190 K (P  210 GPa) has the electron-phonon coupling constantlambdae<missing VAR>-ph  2.0 and the ratio of critical temperature, Tc, to theFermi temperature, Tf, in the range of 0.011 < Tc/Tf < 0.018.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[240.0, 190, 'K', 7],[159.0, 5, 'K', 5],[146.0, 280, 'K', 5],[39.0, 190, 'K', 0],[34.0, 210, 'GPa', 0],[13.0, 2.0, 'and', 0],[116.0, 190, 'K', 2],[235.0, 200, 'K', 3]

Tc
###The electron-phonon coupling constant, the Fermi temperature and unconventional superconductivity in the carbonaceous sulfur hydride 190 K superconductor|E. F. Talantsev###
(1681825, 1681825)
 The analysis shows that Hx<missing VAR>(S,C)y<missing VAR> compoundexhibited Tc  190 K (P  210 GPa) has the electron-phonon coupling constantlambdae<missing VAR>-ph  2.0 and the ratio of critical temperature, Tc, to theFermi temperature, Tf, in the range of 0.011 < Tc/Tf < 0.018.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[268.0, 190, 'K', 7],[187.0, 5, 'K', 5],[174.0, 280, 'K', 5],[67.0, 190, 'K', 0],[62.0, 210, 'GPa', 0],[41.0, 2.0, 'and', 0],[88.0, 190, 'K', 2],[207.0, 200, 'K', 3]

H
###The electron-phonon coupling constant, the Fermi temperature and unconventional superconductivity in the carbonaceous sulfur hydride 190 K superconductor|E. F. Talantsev###
(1681855, 1681855)
 These deducedvalues are very close to ones reported for Hx<missing VAR>S at P  155-165 G<missing VAR>Pa byDrozdov et al (2015 Nature 525 73).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[298.0, 190, 'K', 8],[217.0, 5, 'K', 6],[204.0, 280, 'K', 6],[97.0, 190, 'K', 1],[92.0, 210, 'GPa', 1],[71.0, 2.0, 'and', 1],[58.0, 190, 'K', 1],[177.0, 200, 'K', 2]

S
###The electron-phonon coupling constant, the Fermi temperature and unconventional superconductivity in the carbonaceous sulfur hydride 190 K superconductor|E. F. Talantsev###
(1681857, 1681857)
 These deducedvalues are very close to ones reported for Hx<missing VAR>S at P  155-165 G<missing VAR>Pa byDrozdov et al (2015 Nature 525 73).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[300.0, 190, 'K', 8],[219.0, 5, 'K', 6],[206.0, 280, 'K', 6],[99.0, 190, 'K', 1],[94.0, 210, 'GPa', 1],[73.0, 2.0, 'and', 1],[56.0, 190, 'K', 1],[175.0, 200, 'K', 2]

P
###The electron-phonon coupling constant, the Fermi temperature and unconventional superconductivity in the carbonaceous sulfur hydride 190 K superconductor|E. F. Talantsev###
(1681861, 1681861)
 These deducedvalues are very close to ones reported for Hx<missing VAR>S at P  155-165 G<missing VAR>Pa byDrozdov et al (2015 Nature 525 73).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[304.0, 190, 'K', 8],[223.0, 5, 'K', 6],[210.0, 280, 'K', 6],[103.0, 190, 'K', 1],[98.0, 210, 'GPa', 1],[77.0, 2.0, 'and', 1],[52.0, 190, 'K', 1],[171.0, 200, 'K', 2]

Pa
###The electron-phonon coupling constant, the Fermi temperature and unconventional superconductivity in the carbonaceous sulfur hydride 190 K superconductor|E. F. Talantsev###
(1681869, 1681869)
 These deducedvalues are very close to ones reported for Hx<missing VAR>S at P  155-165 G<missing VAR>Pa byDrozdov et al (2015 Nature 525 73).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0
[312.0, 190, 'K', 8],[231.0, 5, 'K', 6],[218.0, 280, 'K', 6],[111.0, 190, 'K', 1],[106.0, 210, 'GPa', 1],[85.0, 2.0, 'and', 1],[44.0, 190, 'K', 1],[163.0, 200, 'K', 2]

B
###The electron-phonon coupling constant, the Fermi temperature and unconventional superconductivity in the carbonaceous sulfur hydride 190 K superconductor|E. F. Talantsev###
(1681988, 1681988)
 It should be noted that that our analysisshows that all raw R(T,B) datasets for Hx<missing VAR>(S,C)y<missing VAR> samples for which Snideret al (2020 Nature 586 373) reported Tc > 200 K cannot be characterized asreliable data sources.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[431.0, 190, 'K', 10],[350.0, 5, 'K', 8],[337.0, 280, 'K', 8],[230.0, 190, 'K', 3],[225.0, 210, 'GPa', 3],[204.0, 2.0, 'and', 3],[75.0, 190, 'K', 1],[44.0, 200, 'K', 0]

H
###The electron-phonon coupling constant, the Fermi temperature and unconventional superconductivity in the carbonaceous sulfur hydride 190 K superconductor|E. F. Talantsev###
(1681995, 1681995)
 It should be noted that that our analysisshows that all raw R(T,B) datasets for Hx<missing VAR>(S,C)y<missing VAR> samples for which Snideret al (2020 Nature 586 373) reported Tc > 200 K cannot be characterized asreliable data sources.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[438.0, 190, 'K', 10],[357.0, 5, 'K', 8],[344.0, 280, 'K', 8],[237.0, 190, 'K', 3],[232.0, 210, 'GPa', 3],[211.0, 2.0, 'and', 3],[82.0, 190, 'K', 1],[37.0, 200, 'K', 0]

S
###The electron-phonon coupling constant, the Fermi temperature and unconventional superconductivity in the carbonaceous sulfur hydride 190 K superconductor|E. F. Talantsev###
(1681998, 1681998)
 It should be noted that that our analysisshows that all raw R(T,B) datasets for Hx<missing VAR>(S,C)y<missing VAR> samples for which Snideret al (2020 Nature 586 373) reported Tc > 200 K cannot be characterized asreliable data sources.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[441.0, 190, 'K', 10],[360.0, 5, 'K', 8],[347.0, 280, 'K', 8],[240.0, 190, 'K', 3],[235.0, 210, 'GPa', 3],[214.0, 2.0, 'and', 3],[85.0, 190, 'K', 1],[34.0, 200, 'K', 0]

C
###The electron-phonon coupling constant, the Fermi temperature and unconventional superconductivity in the carbonaceous sulfur hydride 190 K superconductor|E. F. Talantsev###
(1682000, 1682000)
 It should be noted that that our analysisshows that all raw R(T,B) datasets for Hx<missing VAR>(S,C)y<missing VAR> samples for which Snideret al (2020 Nature 586 373) reported Tc > 200 K cannot be characterized asreliable data sources.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[443.0, 190, 'K', 10],[362.0, 5, 'K', 8],[349.0, 280, 'K', 8],[242.0, 190, 'K', 3],[237.0, 210, 'GPa', 3],[216.0, 2.0, 'and', 3],[87.0, 190, 'K', 1],[32.0, 200, 'K', 0]

Tc
###The electron-phonon coupling constant, the Fermi temperature and unconventional superconductivity in the carbonaceous sulfur hydride 190 K superconductor|E. F. Talantsev###
(1682029, 1682029)
 It should be noted that that our analysisshows that all raw R(T,B) datasets for Hx<missing VAR>(S,C)y<missing VAR> samples for which Snideret al (2020 Nature 586 373) reported Tc > 200 K cannot be characterized asreliable data sources.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[472.0, 190, 'K', 10],[391.0, 5, 'K', 8],[378.0, 280, 'K', 8],[271.0, 190, 'K', 3],[266.0, 210, 'GPa', 3],[245.0, 2.0, 'and', 3],[116.0, 190, 'K', 1],[3.0, 200, 'K', 0]

Tc
###The electron-phonon coupling constant, the Fermi temperature and unconventional superconductivity in the carbonaceous sulfur hydride 190 K superconductor|E. F. Talantsev###
(1682064, 1682064)
 Thus, independent experimental confirmation/disprovehigh-Tc values in the carbonaceous sulfur hydride is required.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[507.0, 190, 'K', 11],[426.0, 5, 'K', 9],[413.0, 280, 'K', 9],[306.0, 190, 'K', 4],[301.0, 210, 'GPa', 4],[280.0, 2.0, 'and', 4],[151.0, 190, 'K', 2],[32.0, 200, 'K', 1]

(SOI)
###Large Rashba unidirectional magnetoresistance in the Fe/Ge(111) interface states|T. Guillet,C. Zucchetti,A. Marty,G. Isella,C. Vergnaud,Q. Barbedienne,H. Jaffrès,N. Reyren,J. -M. George,A. Fert,M. Jamet###
(1682148, 1682152)
 The structure inversion asymmetry at surfaces and interfaces give rise to theRashba spin-orbit interaction (SOI), that breaks the spin degeneracy of surfaceor interface states.
Featurization successful!
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Large Rashba unidirectional magnetoresistance in the Fe/Ge(111) interface states|T. Guillet,C. Zucchetti,A. Marty,G. Isella,C. Vergnaud,Q. Barbedienne,H. Jaffrès,N. Reyren,J. -M. George,A. Fert,M. Jamet###
(1682259, 1682259)
 This provides an additional tool to manipulate the spinstate in materials such as Si and Ge that, in their bulk form, possessinversion symmetry (or lack structural inersion asymmetry).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ge
###Large Rashba unidirectional magnetoresistance in the Fe/Ge(111) interface states|T. Guillet,C. Zucchetti,A. Marty,G. Isella,C. Vergnaud,Q. Barbedienne,H. Jaffrès,N. Reyren,J. -M. George,A. Fert,M. Jamet###
(1682263, 1682263)
 This provides an additional tool to manipulate the spinstate in materials such as Si and Ge that, in their bulk form, possessinversion symmetry (or lack structural inersion asymmetry).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Large Rashba unidirectional magnetoresistance in the Fe/Ge(111) interface states|T. Guillet,C. Zucchetti,A. Marty,G. Isella,C. Vergnaud,Q. Barbedienne,H. Jaffrès,N. Reyren,J. -M. George,A. Fert,M. Jamet###
(1682382, 1682382)
In this work, we identify the fingerprint of the Rashba states at theFe/Ge(111) interface by magnetotransport measurements in the form of a largeunidirectional magnetoresistance of up to 0.1 %.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.7Sr0.3MnO3NiO
###Synthesis and characterization of vertically aligned La0.7Sr0.3MnO3:NiO nanocomposite thin films for spintronic applications|Gyanendra Panchal,Anjali Panchwanee,Manish Kumar,Katharina Fritsch,Ram Janay Choudhary,Deodutta Moreshwar Phase###
(1682518, 1682526)
Synthesis and characterization of vertically aligned La0.7Sr0.3MnO3NiO nanocomposite thin films for spintronic applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0.04285714285714286,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.09999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[354.0, 230, 'Oe', 4]

V
###Synthesis and characterization of vertically aligned La0.7Sr0.3MnO3:NiO nanocomposite thin films for spintronic applications|Gyanendra Panchal,Anjali Panchwanee,Manish Kumar,Katharina Fritsch,Ram Janay Choudhary,Deodutta Moreshwar Phase###
(1682563, 1682563)
 The microstructures and interfaces of two-phase vertically alignednanocomposite (VAN) thin films play a key role in the design of spintronicdevice architectures and their multifunctional properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[317.0, 230, 'Oe', 3]

N
###Synthesis and characterization of vertically aligned La0.7Sr0.3MnO3:NiO nanocomposite thin films for spintronic applications|Gyanendra Panchal,Anjali Panchwanee,Manish Kumar,Katharina Fritsch,Ram Janay Choudhary,Deodutta Moreshwar Phase###
(1682565, 1682565)
 The microstructures and interfaces of two-phase vertically alignednanocomposite (VAN) thin films play a key role in the design of spintronicdevice architectures and their multifunctional properties.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[315.0, 230, 'Oe', 3]

V
###Synthesis and characterization of vertically aligned La0.7Sr0.3MnO3:NiO nanocomposite thin films for spintronic applications|Gyanendra Panchal,Anjali Panchwanee,Manish Kumar,Katharina Fritsch,Ram Janay Choudhary,Deodutta Moreshwar Phase###
(1682624, 1682624)
 Here, we show howthe microstructures in self-assembled VAN thin films of La0.7Sr0.3MnO3NiO(LSMONiO) can be effectively tuned from nano-granular to nano-columnar, and tonano-maze by controlling the number of laser shots from the two constituentphase targets in the pulsed laser deposition (PLD) film growth.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[256.0, 230, 'Oe', 2]

N
###Synthesis and characterization of vertically aligned La0.7Sr0.3MnO3:NiO nanocomposite thin films for spintronic applications|Gyanendra Panchal,Anjali Panchwanee,Manish Kumar,Katharina Fritsch,Ram Janay Choudhary,Deodutta Moreshwar Phase###
(1682626, 1682626)
 Here, we show howthe microstructures in self-assembled VAN thin films of La0.7Sr0.3MnO3NiO(LSMONiO) can be effectively tuned from nano-granular to nano-columnar, and tonano-maze by controlling the number of laser shots from the two constituentphase targets in the pulsed laser deposition (PLD) film growth.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[254.0, 230, 'Oe', 2]

La0.7Sr0.3MnO3NiO
###Synthesis and characterization of vertically aligned La0.7Sr0.3MnO3:NiO nanocomposite thin films for spintronic applications|Gyanendra Panchal,Anjali Panchwanee,Manish Kumar,Katharina Fritsch,Ram Janay Choudhary,Deodutta Moreshwar Phase###
(1682634, 1682642)
 Here, we show howthe microstructures in self-assembled VAN thin films of La0.7Sr0.3MnO3NiO(LSMONiO) can be effectively tuned from nano-granular to nano-columnar, and tonano-maze by controlling the number of laser shots from the two constituentphase targets in the pulsed laser deposition (PLD) film growth.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0.04285714285714286,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.09999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[238.0, 230, 'Oe', 2]

O
###Synthesis and characterization of vertically aligned La0.7Sr0.3MnO3:NiO nanocomposite thin films for spintronic applications|Gyanendra Panchal,Anjali Panchwanee,Manish Kumar,Katharina Fritsch,Ram Janay Choudhary,Deodutta Moreshwar Phase###
(1682651, 1682651)
 Here, we show howthe microstructures in self-assembled VAN thin films of La0.7Sr0.3MnO3NiO(LSMONiO) can be effectively tuned from nano-granular to nano-columnar, and tonano-maze by controlling the number of laser shots from the two constituentphase targets in the pulsed laser deposition (PLD) film growth.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[229.0, 230, 'Oe', 2]

P
###Synthesis and characterization of vertically aligned La0.7Sr0.3MnO3:NiO nanocomposite thin films for spintronic applications|Gyanendra Panchal,Anjali Panchwanee,Manish Kumar,Katharina Fritsch,Ram Janay Choudhary,Deodutta Moreshwar Phase###
(1682722, 1682722)
 Here, we show howthe microstructures in self-assembled VAN thin films of La0.7Sr0.3MnO3NiO(LSMONiO) can be effectively tuned from nano-granular to nano-columnar, and tonano-maze by controlling the number of laser shots from the two constituentphase targets in the pulsed laser deposition (PLD) film growth.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 230, 'Oe', 2]

K
###Synthesis and characterization of vertically aligned La0.7Sr0.3MnO3:NiO nanocomposite thin films for spintronic applications|Gyanendra Panchal,Anjali Panchwanee,Manish Kumar,Katharina Fritsch,Ram Janay Choudhary,Deodutta Moreshwar Phase###
(1682776, 1682776)
 The observedmicrostructural induced strain is found to significantly enhance themagnetoresistance in a very broad temperature range between 10-240 K and tomodulate the in-plane exchange bias (E<missing VAR>B), with the largest E<missing VAR>B value observed inthe maximally strained heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 230, 'Oe', 1]

B
###Synthesis and characterization of vertically aligned La0.7Sr0.3MnO3:NiO nanocomposite thin films for spintronic applications|Gyanendra Panchal,Anjali Panchwanee,Manish Kumar,Katharina Fritsch,Ram Janay Choudhary,Deodutta Moreshwar Phase###
(1682797, 1682797)
 The observedmicrostructural induced strain is found to significantly enhance themagnetoresistance in a very broad temperature range between 10-240 K and tomodulate the in-plane exchange bias (E<missing VAR>B), with the largest E<missing VAR>B value observed inthe maximally strained heterostructures.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 230, 'Oe', 1]

B
###Synthesis and characterization of vertically aligned La0.7Sr0.3MnO3:NiO nanocomposite thin films for spintronic applications|Gyanendra Panchal,Anjali Panchwanee,Manish Kumar,Katharina Fritsch,Ram Janay Choudhary,Deodutta Moreshwar Phase###
(1682808, 1682808)
 The observedmicrostructural induced strain is found to significantly enhance themagnetoresistance in a very broad temperature range between 10-240 K and tomodulate the in-plane exchange bias (E<missing VAR>B), with the largest E<missing VAR>B value observed inthe maximally strained heterostructures.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 230, 'Oe', 1]

P
###Synthesis and characterization of vertically aligned La0.7Sr0.3MnO3:NiO nanocomposite thin films for spintronic applications|Gyanendra Panchal,Anjali Panchwanee,Manish Kumar,Katharina Fritsch,Ram Janay Choudhary,Deodutta Moreshwar Phase###
(1682843, 1682843)
 Most interestingly, a uniqueperpendicular exchange bias (PE<missing VAR>B) effect is also observed for theseheterostructures with an enhanced PE<missing VAR>B field of up to 230 Oe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 230, 'Oe', 0]

B
###Synthesis and characterization of vertically aligned La0.7Sr0.3MnO3:NiO nanocomposite thin films for spintronic applications|Gyanendra Panchal,Anjali Panchwanee,Manish Kumar,Katharina Fritsch,Ram Janay Choudhary,Deodutta Moreshwar Phase###
(1682845, 1682845)
 Most interestingly, a uniqueperpendicular exchange bias (PE<missing VAR>B) effect is also observed for theseheterostructures with an enhanced PE<missing VAR>B field of up to 230 Oe.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 230, 'Oe', 0]

P
###Synthesis and characterization of vertically aligned La0.7Sr0.3MnO3:NiO nanocomposite thin films for spintronic applications|Gyanendra Panchal,Anjali Panchwanee,Manish Kumar,Katharina Fritsch,Ram Janay Choudhary,Deodutta Moreshwar Phase###
(1682869, 1682869)
 Most interestingly, a uniqueperpendicular exchange bias (PE<missing VAR>B) effect is also observed for theseheterostructures with an enhanced PE<missing VAR>B field of up to 230 Oe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 230, 'Oe', 0]

B
###Synthesis and characterization of vertically aligned La0.7Sr0.3MnO3:NiO nanocomposite thin films for spintronic applications|Gyanendra Panchal,Anjali Panchwanee,Manish Kumar,Katharina Fritsch,Ram Janay Choudhary,Deodutta Moreshwar Phase###
(1682871, 1682871)
 Most interestingly, a uniqueperpendicular exchange bias (PE<missing VAR>B) effect is also observed for theseheterostructures with an enhanced PE<missing VAR>B field of up to 230 Oe.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 230, 'Oe', 0]

B
###Synthesis and characterization of vertically aligned La0.7Sr0.3MnO3:NiO nanocomposite thin films for spintronic applications|Gyanendra Panchal,Anjali Panchwanee,Manish Kumar,Katharina Fritsch,Ram Janay Choudhary,Deodutta Moreshwar Phase###
(1682912, 1682912)
 X<missing VAR>-ray magneticcircular dichroism and training effect measurements demonstrate that theobserved E<missing VAR>B is disorder-induced and arises due to the pinning of NiOuncompensated moments at the disordered interface which is ferromagneticallycoupled with LSMO.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 230, 'Oe', 1]

NiO
###Synthesis and characterization of vertically aligned La0.7Sr0.3MnO3:NiO nanocomposite thin films for spintronic applications|Gyanendra Panchal,Anjali Panchwanee,Manish Kumar,Katharina Fritsch,Ram Janay Choudhary,Deodutta Moreshwar Phase###
(1682934, 1682935)
 X<missing VAR>-ray magneticcircular dichroism and training effect measurements demonstrate that theobserved E<missing VAR>B is disorder-induced and arises due to the pinning of NiOuncompensated moments at the disordered interface which is ferromagneticallycoupled with LSMO.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 230, 'Oe', 1]

O
###Synthesis and characterization of vertically aligned La0.7Sr0.3MnO3:NiO nanocomposite thin films for spintronic applications|Gyanendra Panchal,Anjali Panchwanee,Manish Kumar,Katharina Fritsch,Ram Janay Choudhary,Deodutta Moreshwar Phase###
(1682964, 1682964)
 X<missing VAR>-ray magneticcircular dichroism and training effect measurements demonstrate that theobserved E<missing VAR>B is disorder-induced and arises due to the pinning of NiOuncompensated moments at the disordered interface which is ferromagneticallycoupled with LSMO.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 230, 'Oe', 1]

Mn3/Mn4
###Synthesis and characterization of vertically aligned La0.7Sr0.3MnO3:NiO nanocomposite thin films for spintronic applications|Gyanendra Panchal,Anjali Panchwanee,Manish Kumar,Katharina Fritsch,Ram Janay Choudhary,Deodutta Moreshwar Phase###
(1683003, 1683007)
 Furthermore, systematic changes in the electronic structureacross the vertical interface related to a variation of the Mn3/Mn4 contentarise as a consequence of out-of-plane tensile strain.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[123.0, 230, 'Oe', 2]

SrRuO3
###Thickness-dependent quantum transport of Weyl fermions in ultra-high-quality SrRuO3 films|Shingo Kaneta-Takada,Yuki K. Wakabayashi,Yoshiharu Krockenberger,Shinobu Ohya,Masaaki Tanaka,Yoshitaka Taniyasu,Hideki Yamamoto###
(1683063, 1683066)
Thickness-dependent quantum transport of Weyl fermions in ultra-high-quality SrRuO3 films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 4, 'd', 1],[204.0, 10, 'nm', 4]

SrRuO3
###Thickness-dependent quantum transport of Weyl fermions in ultra-high-quality SrRuO3 films|Shingo Kaneta-Takada,Yuki K. Wakabayashi,Yoshiharu Krockenberger,Shinobu Ohya,Masaaki Tanaka,Yoshitaka Taniyasu,Hideki Yamamoto###
(1683095, 1683098)
 The recent observation of Weyl fermions in the itinerant 4d ferromagneticperovskite SrRuO3 points to this material being a good platform for exploringnovel physics related to a pair of Weyl nodes in epitaxial heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 4, 'd', 0],[172.0, 10, 'nm', 3]

In
###Thickness-dependent quantum transport of Weyl fermions in ultra-high-quality SrRuO3 films|Shingo Kaneta-Takada,Yuki K. Wakabayashi,Yoshiharu Krockenberger,Shinobu Ohya,Masaaki Tanaka,Yoshitaka Taniyasu,Hideki Yamamoto###
(1683146, 1683146)
 Inthis letter, we report the thickness-dependent magnetotransport properties ofultra-high-quality epitaxial SrRuO3 films grown under optimized conditions onSrTiO3 substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 4, 'd', 1],[124.0, 10, 'nm', 2]

SrRuO3
###Thickness-dependent quantum transport of Weyl fermions in ultra-high-quality SrRuO3 films|Shingo Kaneta-Takada,Yuki K. Wakabayashi,Yoshiharu Krockenberger,Shinobu Ohya,Masaaki Tanaka,Yoshitaka Taniyasu,Hideki Yamamoto###
(1683179, 1683182)
 Inthis letter, we report the thickness-dependent magnetotransport properties ofultra-high-quality epitaxial SrRuO3 films grown under optimized conditions onSrTiO3 substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 4, 'd', 1],[88.0, 10, 'nm', 2]

SrTiO3
###Thickness-dependent quantum transport of Weyl fermions in ultra-high-quality SrRuO3 films|Shingo Kaneta-Takada,Yuki K. Wakabayashi,Yoshiharu Krockenberger,Shinobu Ohya,Masaaki Tanaka,Yoshitaka Taniyasu,Hideki Yamamoto###
(1683197, 1683200)
 Inthis letter, we report the thickness-dependent magnetotransport properties ofultra-high-quality epitaxial SrRuO3 films grown under optimized conditions onSrTiO3 substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 4, 'd', 1],[70.0, 10, 'nm', 2]

SrRuO3
###Thickness-dependent quantum transport of Weyl fermions in ultra-high-quality SrRuO3 films|Shingo Kaneta-Takada,Yuki K. Wakabayashi,Yoshiharu Krockenberger,Shinobu Ohya,Masaaki Tanaka,Yoshitaka Taniyasu,Hideki Yamamoto###
(1683302, 1683305)
Residual resistivity increased with decreasing film thickness, indicatingdisorder near the interface between SrRuO3 and the SrTiO3 substrate.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[214.0, 4, 'd', 4],[32.0, 10, 'nm', 1]

SrTiO3
###Thickness-dependent quantum transport of Weyl fermions in ultra-high-quality SrRuO3 films|Shingo Kaneta-Takada,Yuki K. Wakabayashi,Yoshiharu Krockenberger,Shinobu Ohya,Masaaki Tanaka,Yoshitaka Taniyasu,Hideki Yamamoto###
(1683311, 1683314)
Residual resistivity increased with decreasing film thickness, indicatingdisorder near the interface between SrRuO3 and the SrTiO3 substrate.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[223.0, 4, 'd', 4],[41.0, 10, 'nm', 1]

SrRuO3
###Thickness-dependent quantum transport of Weyl fermions in ultra-high-quality SrRuO3 films|Shingo Kaneta-Takada,Yuki K. Wakabayashi,Yoshiharu Krockenberger,Shinobu Ohya,Masaaki Tanaka,Yoshitaka Taniyasu,Hideki Yamamoto###
(1683442, 1683445)
 These results provide guidelines for realizing quantum transport of Weylfermions in SrRuO3 near heterointerfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[354.0, 4, 'd', 7],[172.0, 10, 'nm', 4]

Fe/MgO
###Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions|Thomas Scheike,Qingyi Xiang,Zhenchao Wen,Hiroaki Sukegawa,Tadakatsu Ohkubo,Kazuhiro Hono,Seiji Mitani###
(1683479, 1683482)
Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[17.0, 400, '%', 0],[36.0, 417, '%', 1],[53.0, 914, '%', 1],[57.0, 3, 'K', 1],[196.0, 80, '%', 2],[314.0, 3, 'K', 4],[374.0, 496, '%', 5]

Fe/MgO
###Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions|Thomas Scheike,Qingyi Xiang,Zhenchao Wen,Hiroaki Sukegawa,Tadakatsu Ohkubo,Kazuhiro Hono,Seiji Mitani###
(1683549, 1683552)
 Giant tunnel magnetoresistance (TMR) ratios of 417% at room temperature (RT)and 914% at 3 K were demonstrated in epitaxial Fe/MgO/Fe(001) exchanged-biasedspin-valve magnetic tunnel junctions (MTJs) by tuning growth conditions foreach layer, combining sputter deposition for the Fe layers, electron-beamevaporation of the MgO barrier, and barrier interface tuning.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[87.0, 400, '%', 1],[31.0, 417, '%', 0],[14.0, 914, '%', 0],[10.0, 3, 'K', 0],[126.0, 80, '%', 1],[244.0, 3, 'K', 3],[304.0, 496, '%', 4]

Fe
###Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions|Thomas Scheike,Qingyi Xiang,Zhenchao Wen,Hiroaki Sukegawa,Tadakatsu Ohkubo,Kazuhiro Hono,Seiji Mitani###
(1683606, 1683606)
 Giant tunnel magnetoresistance (TMR) ratios of 417% at room temperature (RT)and 914% at 3 K were demonstrated in epitaxial Fe/MgO/Fe(001) exchanged-biasedspin-valve magnetic tunnel junctions (MTJs) by tuning growth conditions foreach layer, combining sputter deposition for the Fe layers, electron-beamevaporation of the MgO barrier, and barrier interface tuning.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 400, '%', 1],[88.0, 417, '%', 0],[71.0, 914, '%', 0],[67.0, 3, 'K', 0],[72.0, 80, '%', 1],[190.0, 3, 'K', 3],[250.0, 496, '%', 4]

MgO
###Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions|Thomas Scheike,Qingyi Xiang,Zhenchao Wen,Hiroaki Sukegawa,Tadakatsu Ohkubo,Kazuhiro Hono,Seiji Mitani###
(1683622, 1683623)
 Giant tunnel magnetoresistance (TMR) ratios of 417% at room temperature (RT)and 914% at 3 K were demonstrated in epitaxial Fe/MgO/Fe(001) exchanged-biasedspin-valve magnetic tunnel junctions (MTJs) by tuning growth conditions foreach layer, combining sputter deposition for the Fe layers, electron-beamevaporation of the MgO barrier, and barrier interface tuning.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 400, '%', 1],[104.0, 417, '%', 0],[87.0, 914, '%', 0],[83.0, 3, 'K', 0],[55.0, 80, '%', 1],[173.0, 3, 'K', 3],[233.0, 496, '%', 4]

MgO
###Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions|Thomas Scheike,Qingyi Xiang,Zhenchao Wen,Hiroaki Sukegawa,Tadakatsu Ohkubo,Kazuhiro Hono,Seiji Mitani###
(1683656, 1683657)
 Clear TMRoscillation as a function of the MgO thickness with a large peak-to-valleydifference of 80% was observed when the layers were grown on a highly(001)-oriented Cr buffer layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[194.0, 400, '%', 2],[138.0, 417, '%', 1],[121.0, 914, '%', 1],[117.0, 3, 'K', 1],[21.0, 80, '%', 0],[139.0, 3, 'K', 2],[199.0, 496, '%', 3]

Cr
###Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions|Thomas Scheike,Qingyi Xiang,Zhenchao Wen,Hiroaki Sukegawa,Tadakatsu Ohkubo,Kazuhiro Hono,Seiji Mitani###
(1683708, 1683708)
 Clear TMRoscillation as a function of the MgO thickness with a large peak-to-valleydifference of 80% was observed when the layers were grown on a highly(001)-oriented Cr buffer layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[246.0, 400, '%', 2],[190.0, 417, '%', 1],[173.0, 914, '%', 1],[169.0, 3, 'K', 1],[30.0, 80, '%', 0],[88.0, 3, 'K', 2],[148.0, 496, '%', 3]

I
###Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions|Thomas Scheike,Qingyi Xiang,Zhenchao Wen,Hiroaki Sukegawa,Tadakatsu Ohkubo,Kazuhiro Hono,Seiji Mitani###
(1683740, 1683740)
 Specific features of the observed MTJs aresymmetric differential conductance (d<missing VAR>I/d<missing VAR>V) spectra for the bias polarity andplateau-like deep local minima in d<missing VAR>I/d<missing VAR>V (parallel configuration) at V 0.20.5 V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[278.0, 400, '%', 3],[222.0, 417, '%', 2],[205.0, 914, '%', 2],[201.0, 3, 'K', 2],[62.0, 80, '%', 1],[56.0, 3, 'K', 1],[116.0, 496, '%', 2]

V
###Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions|Thomas Scheike,Qingyi Xiang,Zhenchao Wen,Hiroaki Sukegawa,Tadakatsu Ohkubo,Kazuhiro Hono,Seiji Mitani###
(1683743, 1683743)
 Specific features of the observed MTJs aresymmetric differential conductance (d<missing VAR>I/d<missing VAR>V) spectra for the bias polarity andplateau-like deep local minima in d<missing VAR>I/d<missing VAR>V (parallel configuration) at V 0.20.5 V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[281.0, 400, '%', 3],[225.0, 417, '%', 2],[208.0, 914, '%', 2],[204.0, 3, 'K', 2],[65.0, 80, '%', 1],[53.0, 3, 'K', 1],[113.0, 496, '%', 2]

I
###Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions|Thomas Scheike,Qingyi Xiang,Zhenchao Wen,Hiroaki Sukegawa,Tadakatsu Ohkubo,Kazuhiro Hono,Seiji Mitani###
(1683772, 1683772)
 Specific features of the observed MTJs aresymmetric differential conductance (d<missing VAR>I/d<missing VAR>V) spectra for the bias polarity andplateau-like deep local minima in d<missing VAR>I/d<missing VAR>V (parallel configuration) at V 0.20.5 V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[310.0, 400, '%', 3],[254.0, 417, '%', 2],[237.0, 914, '%', 2],[233.0, 3, 'K', 2],[94.0, 80, '%', 1],[24.0, 3, 'K', 1],[84.0, 496, '%', 2]

V
###Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions|Thomas Scheike,Qingyi Xiang,Zhenchao Wen,Hiroaki Sukegawa,Tadakatsu Ohkubo,Kazuhiro Hono,Seiji Mitani###
(1683775, 1683775)
 Specific features of the observed MTJs aresymmetric differential conductance (d<missing VAR>I/d<missing VAR>V) spectra for the bias polarity andplateau-like deep local minima in d<missing VAR>I/d<missing VAR>V (parallel configuration) at V 0.20.5 V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[313.0, 400, '%', 3],[257.0, 417, '%', 2],[240.0, 914, '%', 2],[236.0, 3, 'K', 2],[97.0, 80, '%', 1],[21.0, 3, 'K', 1],[81.0, 496, '%', 2]

V
###Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions|Thomas Scheike,Qingyi Xiang,Zhenchao Wen,Hiroaki Sukegawa,Tadakatsu Ohkubo,Kazuhiro Hono,Seiji Mitani###
(1683785, 1683785)
 Specific features of the observed MTJs aresymmetric differential conductance (d<missing VAR>I/d<missing VAR>V) spectra for the bias polarity andplateau-like deep local minima in d<missing VAR>I/d<missing VAR>V (parallel configuration) at V 0.20.5 V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[323.0, 400, '%', 3],[267.0, 417, '%', 2],[250.0, 914, '%', 2],[246.0, 3, 'K', 2],[107.0, 80, '%', 1],[11.0, 3, 'K', 1],[71.0, 496, '%', 2]

V
###Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions|Thomas Scheike,Qingyi Xiang,Zhenchao Wen,Hiroaki Sukegawa,Tadakatsu Ohkubo,Kazuhiro Hono,Seiji Mitani###
(1683792, 1683792)
 Specific features of the observed MTJs aresymmetric differential conductance (d<missing VAR>I/d<missing VAR>V) spectra for the bias polarity andplateau-like deep local minima in d<missing VAR>I/d<missing VAR>V (parallel configuration) at V 0.20.5 V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[330.0, 400, '%', 3],[274.0, 417, '%', 2],[257.0, 914, '%', 2],[253.0, 3, 'K', 2],[114.0, 80, '%', 1],[4.0, 3, 'K', 1],[64.0, 496, '%', 2]

At
###Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions|Thomas Scheike,Qingyi Xiang,Zhenchao Wen,Hiroaki Sukegawa,Tadakatsu Ohkubo,Kazuhiro Hono,Seiji Mitani###
(1683795, 1683795)
 At 3K, fine structures with two dips emerge in the plateau-liked<missing VAR>I/d<missing VAR>V, reflecting highly coherent tunneling through the Fe/MgO/Fe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[333.0, 400, '%', 4],[277.0, 417, '%', 3],[260.0, 914, '%', 3],[256.0, 3, 'K', 3],[117.0, 80, '%', 2],[1.0, 3, 'K', 0],[61.0, 496, '%', 1]

I
###Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions|Thomas Scheike,Qingyi Xiang,Zhenchao Wen,Hiroaki Sukegawa,Tadakatsu Ohkubo,Kazuhiro Hono,Seiji Mitani###
(1683821, 1683821)
 At 3K, fine structures with two dips emerge in the plateau-liked<missing VAR>I/d<missing VAR>V, reflecting highly coherent tunneling through the Fe/MgO/Fe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[359.0, 400, '%', 4],[303.0, 417, '%', 3],[286.0, 914, '%', 3],[282.0, 3, 'K', 3],[143.0, 80, '%', 2],[25.0, 3, 'K', 0],[35.0, 496, '%', 1]

V
###Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions|Thomas Scheike,Qingyi Xiang,Zhenchao Wen,Hiroaki Sukegawa,Tadakatsu Ohkubo,Kazuhiro Hono,Seiji Mitani###
(1683824, 1683824)
 At 3K, fine structures with two dips emerge in the plateau-liked<missing VAR>I/d<missing VAR>V, reflecting highly coherent tunneling through the Fe/MgO/Fe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[362.0, 400, '%', 4],[306.0, 417, '%', 3],[289.0, 914, '%', 3],[285.0, 3, 'K', 3],[146.0, 80, '%', 2],[28.0, 3, 'K', 0],[32.0, 496, '%', 1]

Fe/MgO/Fe
###Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions|Thomas Scheike,Qingyi Xiang,Zhenchao Wen,Hiroaki Sukegawa,Tadakatsu Ohkubo,Kazuhiro Hono,Seiji Mitani###
(1683839, 1683844)
 At 3K, fine structures with two dips emerge in the plateau-liked<missing VAR>I/d<missing VAR>V, reflecting highly coherent tunneling through the Fe/MgO/Fe.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[377.0, 400, '%', 4],[321.0, 417, '%', 3],[304.0, 914, '%', 3],[300.0, 3, 'K', 3],[161.0, 80, '%', 2],[43.0, 3, 'K', 0],[12.0, 496, '%', 1]

CoFe
###Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions|Thomas Scheike,Qingyi Xiang,Zhenchao Wen,Hiroaki Sukegawa,Tadakatsu Ohkubo,Kazuhiro Hono,Seiji Mitani###
(1683880, 1683881)
 We alsoobserved a 496% TMR ratio at RT by a 2.24-nm-thick-CoFe insertion at thebottom-Fe/MgO interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[418.0, 400, '%', 5],[362.0, 417, '%', 4],[345.0, 914, '%', 4],[341.0, 3, 'K', 4],[202.0, 80, '%', 3],[84.0, 3, 'K', 1],[24.0, 496, '%', 0]

Fe/MgO
###Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions|Thomas Scheike,Qingyi Xiang,Zhenchao Wen,Hiroaki Sukegawa,Tadakatsu Ohkubo,Kazuhiro Hono,Seiji Mitani###
(1683892, 1683895)
 We alsoobserved a 496% TMR ratio at RT by a 2.24-nm-thick-CoFe insertion at thebottom-Fe/MgO interface.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[430.0, 400, '%', 5],[374.0, 417, '%', 4],[357.0, 914, '%', 4],[353.0, 3, 'K', 4],[214.0, 80, '%', 3],[96.0, 3, 'K', 1],[36.0, 496, '%', 0]

In
###Non-planar geometrical effects on the magnetoelectrical signal in a three-dimensional nanomagnetic circuit|Fanfan Meng,Claire Donnelly,Claas Abert,Luka Skoric,Stuart Holmes,Zhuocong Xiao,Jung-Wei Liao,Peter J. Newton,Crispin H. W. Barnes,Dédalo Sanz-Hernández,Aurelio Hierro-Rodriguez,Dieter Suess,Russell P. Cowburn,Amalio Fernández-Pacheco###
(1684013, 1684013)
 In this work, weinvestigate the magnetoelectrical signals of a ferromagnetic 3D nanodeviceintegrated into a microelectronic circuit using direct-write nanofabrication.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 3, 'D', 1],[23.0, 3, 'D', 0],[53.0, 3, 'D', 1],[108.0, 3, 'D', 2],[152.0, 3, 'D', 2],[222.0, 3, 'D', 3],[276.0, 3, 'D', 4]

Zn
###An insulating doped antiferromagnet with low magnetic symmetry as a room temperature spin conduit|Andrew Ross,Romain Lebrun,Lorenzo Baldrati,Akashdeep Kamra,Olena Gomonay,Shilei Ding,Felix Schreiber,Dirk Backes,Francesco Maccherozzi,Daniel A. Grave,Avner Rothschild,Jairo Sinova,Mathias Kläui###
(1684385, 1684385)
 We report room temperature long-distance spin transport of magnons inantiferromagnetic thin film hematite doped with Zn.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Linear-in temperature resistivity from an isotropic Planckian scattering rate|G. Grissonnanche,Y. Fang,A. Legros,S. Verret,F. Laliberté,C. Collignon,J. Zhou,D. Graf,P. Goddard,L. Taillefer,B. J. Ramshaw###
(1684852, 1684852)
 This T<missing VAR>-linear resistivity has beenattributed to charge carriers scattering at a rate given by hbar/taualphak<missing VAR>rm B T<missing VAR>, where alpha is a constant of order unity.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 0, ',', 1]

Nd
###Linear-in temperature resistivity from an isotropic Planckian scattering rate|G. Grissonnanche,Y. Fang,A. Legros,S. Verret,F. Laliberté,C. Collignon,J. Zhou,D. Graf,P. Goddard,L. Taillefer,B. J. Ramshaw###
(1684990, 1684990)
 Here we report a measurement of the angle-dependentmagnetoresistance (ADMR) of Nd-L<missing VAR>SCO---a hole-doped cuprate that displaysT<missing VAR>-linear resistivity down to the lowest measured temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[206.0, 0, ',', 3]

SCO
###Linear-in temperature resistivity from an isotropic Planckian scattering rate|G. Grissonnanche,Y. Fang,A. Legros,S. Verret,F. Laliberté,C. Collignon,J. Zhou,D. Graf,P. Goddard,L. Taillefer,B. J. Ramshaw###
(1684993, 1684995)
 Here we report a measurement of the angle-dependentmagnetoresistance (ADMR) of Nd-L<missing VAR>SCO---a hole-doped cuprate that displaysT<missing VAR>-linear resistivity down to the lowest measured temperatures.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[209.0, 0, ',', 3]

S
###Linear-in temperature resistivity from an isotropic Planckian scattering rate|G. Grissonnanche,Y. Fang,A. Legros,S. Verret,F. Laliberté,C. Collignon,J. Zhou,D. Graf,P. Goddard,L. Taillefer,B. J. Ramshaw###
(1685073, 1685073)
 The ADMRunveils a well-defined Fermi surface that agrees quantitatively withangle-resolved photoemission spectroscopy (ARPES) measurements and reveals aT<missing VAR>-linear scattering rate that saturates the Planckian limit, namely alpha 1.2 pm 0.4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[289.0, 0, ',', 4]

EuCd2As2
###Single pair of Weyl nodes in the spin-canted structure of EuCd$_2$As$_2$|K. M. Taddei,L. Yin,L. D. Sanjeewa,Y. Li,J. Xing,C. dela Cruz,D. Phelan,A. S. Sefat,D. Parker###
(1685253, 1685257)
Single pair of Weyl nodes in the spin-canted structure of EuCd2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuCd2As2
###Single pair of Weyl nodes in the spin-canted structure of EuCd$_2$As$_2$|K. M. Taddei,L. Yin,L. D. Sanjeewa,Y. Li,J. Xing,C. dela Cruz,D. Phelan,A. S. Sefat,D. Parker###
(1685352, 1685356)
 Here we present neutrondiffraction, density functional theory and transport measurement results whichindicate that EuCd2As2 , under ambient field, strain and pressure, issuch a material with a single pair of Weyl points.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C2
###Single pair of Weyl nodes in the spin-canted structure of EuCd$_2$As$_2$|K. M. Taddei,L. Yin,L. D. Sanjeewa,Y. Li,J. Xing,C. dela Cruz,D. Phelan,A. S. Sefat,D. Parker###
(1685418, 1685419)
 Our work reveals a magneticstructure (magnetic space group C2/m) with Eu moments pointing along the[210] direction in-plane and canted sim 30circ out-of-plane.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Eu
###Single pair of Weyl nodes in the spin-canted structure of EuCd$_2$As$_2$|K. M. Taddei,L. Yin,L. D. Sanjeewa,Y. Li,J. Xing,C. dela Cruz,D. Phelan,A. S. Sefat,D. Parker###
(1685426, 1685426)
 Our work reveals a magneticstructure (magnetic space group C2/m) with Eu moments pointing along the[210] direction in-plane and canted sim 30circ out-of-plane.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuCd2As2
###Single pair of Weyl nodes in the spin-canted structure of EuCd$_2$As$_2$|K. M. Taddei,L. Yin,L. D. Sanjeewa,Y. Li,J. Xing,C. dela Cruz,D. Phelan,A. S. Sefat,D. Parker###
(1685655, 1685659)
Finally, transport measurements of the anomalous Hall Effect and longitudinalmagnetoresistance exhibit properties indicative of a chiral anomaly, thussupporting the neutron scattering and DFT results suggesting EuCd2As2 isclose to the ideal situation of the Weyl Hydrogen atom.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ir2O7
###Evolution of possible Weyl semimetal states across the hole-doping induced Mott transition in pyrochlore iridates|Kentaro Ueda,Hikaru Fukuda,Ryoma Kaneko,Jun Fujioka,Yoshinori Tokura###
(1685759, 1685762)
 We study possible Weyl semimetals of strongly-correlated electrons byinvestigating magnetotransport properties in pyrochlore R<missing VAR>2Ir2O7 (R<missing VAR>rare-earthions), choosing three types of R<missing VAR> ions to design the exchange coupling schemebetween R<missing VAR> 4f and Ir 5d moments; non-magnetic Eu (4f<missing VAR>6), isotropic Gd (4f<missing VAR>7), andanisotropic Tb (4f<missing VAR>8).
Featurization terminated normally.
0,0,0,0,0,0,0,0.7777777777777778,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 4, 'f', 0],[46.0, 5, 'd', 0]

Ir
###Evolution of possible Weyl semimetal states across the hole-doping induced Mott transition in pyrochlore iridates|Kentaro Ueda,Hikaru Fukuda,Ryoma Kaneko,Jun Fujioka,Yoshinori Tokura###
(1685807, 1685807)
 We study possible Weyl semimetals of strongly-correlated electrons byinvestigating magnetotransport properties in pyrochlore R<missing VAR>2Ir2O7 (R<missing VAR>rare-earthions), choosing three types of R<missing VAR> ions to design the exchange coupling schemebetween R<missing VAR> 4f and Ir 5d moments; non-magnetic Eu (4f<missing VAR>6), isotropic Gd (4f<missing VAR>7), andanisotropic Tb (4f<missing VAR>8).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 4, 'f', 0],[1.0, 5, 'd', 0]

Eu
###Evolution of possible Weyl semimetal states across the hole-doping induced Mott transition in pyrochlore iridates|Kentaro Ueda,Hikaru Fukuda,Ryoma Kaneko,Jun Fujioka,Yoshinori Tokura###
(1685817, 1685817)
 We study possible Weyl semimetals of strongly-correlated electrons byinvestigating magnetotransport properties in pyrochlore R<missing VAR>2Ir2O7 (R<missing VAR>rare-earthions), choosing three types of R<missing VAR> ions to design the exchange coupling schemebetween R<missing VAR> 4f and Ir 5d moments; non-magnetic Eu (4f<missing VAR>6), isotropic Gd (4f<missing VAR>7), andanisotropic Tb (4f<missing VAR>8).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 4, 'f', 0],[9.0, 5, 'd', 0]

Gd
###Evolution of possible Weyl semimetal states across the hole-doping induced Mott transition in pyrochlore iridates|Kentaro Ueda,Hikaru Fukuda,Ryoma Kaneko,Jun Fujioka,Yoshinori Tokura###
(1685828, 1685828)
 We study possible Weyl semimetals of strongly-correlated electrons byinvestigating magnetotransport properties in pyrochlore R<missing VAR>2Ir2O7 (R<missing VAR>rare-earthions), choosing three types of R<missing VAR> ions to design the exchange coupling schemebetween R<missing VAR> 4f and Ir 5d moments; non-magnetic Eu (4f<missing VAR>6), isotropic Gd (4f<missing VAR>7), andanisotropic Tb (4f<missing VAR>8).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 4, 'f', 0],[20.0, 5, 'd', 0]

Tb
###Evolution of possible Weyl semimetal states across the hole-doping induced Mott transition in pyrochlore iridates|Kentaro Ueda,Hikaru Fukuda,Ryoma Kaneko,Jun Fujioka,Yoshinori Tokura###
(1685842, 1685842)
 We study possible Weyl semimetals of strongly-correlated electrons byinvestigating magnetotransport properties in pyrochlore R<missing VAR>2Ir2O7 (R<missing VAR>rare-earthions), choosing three types of R<missing VAR> ions to design the exchange coupling schemebetween R<missing VAR> 4f and Ir 5d moments; non-magnetic Eu (4f<missing VAR>6), isotropic Gd (4f<missing VAR>7), andanisotropic Tb (4f<missing VAR>8).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 4, 'f', 0],[34.0, 5, 'd', 0]

In
###Evolution of possible Weyl semimetal states across the hole-doping induced Mott transition in pyrochlore iridates|Kentaro Ueda,Hikaru Fukuda,Ryoma Kaneko,Jun Fujioka,Yoshinori Tokura###
(1685851, 1685851)
 In the doping-induced semimetallic state, distinctivefeatures of magnetoresistance and Hall effect are observed in R<missing VAR>Gd and Tbcompounds due to the effects of the exchange-enhanced isotropic and anisotropicZeeman fields, respectively, exemplifying the double Weyl semimetal and the2-in 2-out line-node semimetal as predicted by theories.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 4, 'f', 1],[43.0, 5, 'd', 1]

Gd
###Evolution of possible Weyl semimetal states across the hole-doping induced Mott transition in pyrochlore iridates|Kentaro Ueda,Hikaru Fukuda,Ryoma Kaneko,Jun Fujioka,Yoshinori Tokura###
(1685886, 1685886)
 In the doping-induced semimetallic state, distinctivefeatures of magnetoresistance and Hall effect are observed in R<missing VAR>Gd and Tbcompounds due to the effects of the exchange-enhanced isotropic and anisotropicZeeman fields, respectively, exemplifying the double Weyl semimetal and the2-in 2-out line-node semimetal as predicted by theories.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 4, 'f', 1],[78.0, 5, 'd', 1]

Tb
###Evolution of possible Weyl semimetal states across the hole-doping induced Mott transition in pyrochlore iridates|Kentaro Ueda,Hikaru Fukuda,Ryoma Kaneko,Jun Fujioka,Yoshinori Tokura###
(1685890, 1685890)
 In the doping-induced semimetallic state, distinctivefeatures of magnetoresistance and Hall effect are observed in R<missing VAR>Gd and Tbcompounds due to the effects of the exchange-enhanced isotropic and anisotropicZeeman fields, respectively, exemplifying the double Weyl semimetal and the2-in 2-out line-node semimetal as predicted by theories.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 4, 'f', 1],[82.0, 5, 'd', 1]

In
###Evolution of possible Weyl semimetal states across the hole-doping induced Mott transition in pyrochlore iridates|Kentaro Ueda,Hikaru Fukuda,Ryoma Kaneko,Jun Fujioka,Yoshinori Tokura###
(1685964, 1685964)
 In particular, a Hallangle of R<missing VAR>Gd compound is strongly enhanced to 1.5 % near above the criticaldoping for the Mott transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 4, 'f', 2],[156.0, 5, 'd', 2]

Gd
###Evolution of possible Weyl semimetal states across the hole-doping induced Mott transition in pyrochlore iridates|Kentaro Ueda,Hikaru Fukuda,Ryoma Kaneko,Jun Fujioka,Yoshinori Tokura###
(1685979, 1685979)
 In particular, a Hallangle of R<missing VAR>Gd compound is strongly enhanced to 1.5 % near above the criticaldoping for the Mott transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[176.0, 4, 'f', 2],[171.0, 5, 'd', 2]

Gd
###Evolution of possible Weyl semimetal states across the hole-doping induced Mott transition in pyrochlore iridates|Kentaro Ueda,Hikaru Fukuda,Ryoma Kaneko,Jun Fujioka,Yoshinori Tokura###
(1686044, 1686044)
 Furthermore, an unconventional Hallcontribution is discerned for a lower doping regime of R<missing VAR>Gd compound, which canbe ascribed to the emergence of Weyl points with the field-distorted all-inall-out order state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[241.0, 4, 'f', 3],[236.0, 5, 'd', 3]

In
###Detection of graphene's divergent orbital diamagnetism at the Dirac point|J. Vallejo,N. J. Wu,C. Fermon,M. Pannetier-Lecoeur,T. Wakamura,K. Watanabe,T. Tanigushi,T. Pellegrin,A. Bernard,S. Daddinounou,V. Bouchiat,S. Guéron,M. Ferrier,G. Montambaux,H. Bouchiat###
(1686258, 1686258)
 Incontrast, the orbital magnetism of graphene, which is one of the mostfundamental signature of the characteristic Berry phase of graphenes<missing VAR>electronic wave functions, has not yet been measured in a single flake.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[266.0, 2, 'D', 4]

In
###Detection of graphene's divergent orbital diamagnetism at the Dirac point|J. Vallejo,N. J. Wu,C. Fermon,M. Pannetier-Lecoeur,T. Wakamura,K. Watanabe,T. Tanigushi,T. Pellegrin,A. Bernard,S. Daddinounou,V. Bouchiat,S. Guéron,M. Ferrier,G. Montambaux,H. Bouchiat###
(1686334, 1686334)
 Inparticular, the striking prediction of a divergent diamagnetic response at zerodoping calls for an experimental test.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[190.0, 2, 'D', 3]

II
###Sondheimer oscillations as a probe of non-ohmic flow in type-II Weyl semimetal WP$_2$|Maarten R. van Delft,Yaxian Wang,Carsten Putzke,Jacopo Oswald,Georgios Varnavides,Christina A. C. Garcia,Chunyu Guo,Heinz Schmid,Vicky Süss,Horst Borrmann,Jonas Diaz,Yan Sun,Claudia Felser,Bernd Gotsmann,Prineha Narang,Philip J. W. Moll###
(1686615, 1686616)
Sondheimer oscillations as a probe of non-ohmic flow in type-II Weyl semimetal WP2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WP2
###Sondheimer oscillations as a probe of non-ohmic flow in type-II Weyl semimetal WP$_2$|Maarten R. van Delft,Yaxian Wang,Carsten Putzke,Jacopo Oswald,Georgios Varnavides,Christina A. C. Garcia,Chunyu Guo,Heinz Schmid,Vicky Süss,Horst Borrmann,Jonas Diaz,Yan Sun,Claudia Felser,Bernd Gotsmann,Prineha Narang,Philip J. W. Moll###
(1686622, 1686624)
Sondheimer oscillations as a probe of non-ohmic flow in type-II Weyl semimetal WP2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Sondheimer oscillations as a probe of non-ohmic flow in type-II Weyl semimetal WP$_2$|Maarten R. van Delft,Yaxian Wang,Carsten Putzke,Jacopo Oswald,Georgios Varnavides,Christina A. C. Garcia,Chunyu Guo,Heinz Schmid,Vicky Süss,Horst Borrmann,Jonas Diaz,Yan Sun,Claudia Felser,Bernd Gotsmann,Prineha Narang,Philip J. W. Moll###
(1686627, 1686627)
 As conductors in electronic applications shrink, microscopic conductionprocesses lead to strong deviations from Ohms<missing VAR> law.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Sondheimer oscillations as a probe of non-ohmic flow in type-II Weyl semimetal WP$_2$|Maarten R. van Delft,Yaxian Wang,Carsten Putzke,Jacopo Oswald,Georgios Varnavides,Christina A. C. Garcia,Chunyu Guo,Heinz Schmid,Vicky Süss,Horst Borrmann,Jonas Diaz,Yan Sun,Claudia Felser,Bernd Gotsmann,Prineha Narang,Philip J. W. Moll###
(1686683, 1686683)
 Depending on the lengthscales of momentum conserving (lMC) and relaxing (lMR) electronscattering, and the device size (d), current flows may shift from ohmic toballistic to hydrodynamic regimes and more exotic mixtures thereof.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Sondheimer oscillations as a probe of non-ohmic flow in type-II Weyl semimetal WP$_2$|Maarten R. van Delft,Yaxian Wang,Carsten Putzke,Jacopo Oswald,Georgios Varnavides,Christina A. C. Garcia,Chunyu Guo,Heinz Schmid,Vicky Süss,Horst Borrmann,Jonas Diaz,Yan Sun,Claudia Felser,Bernd Gotsmann,Prineha Narang,Philip J. W. Moll###
(1686811, 1686811)
 In this context, we exploit Sondheimer oscillations,semi-classical magnetoresistance oscillations due to helical electronic motion,as a method to obtain lMR in micro-devices even when lMRgg d<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WP2
###Sondheimer oscillations as a probe of non-ohmic flow in type-II Weyl semimetal WP$_2$|Maarten R. van Delft,Yaxian Wang,Carsten Putzke,Jacopo Oswald,Georgios Varnavides,Christina A. C. Garcia,Chunyu Guo,Heinz Schmid,Vicky Süss,Horst Borrmann,Jonas Diaz,Yan Sun,Claudia Felser,Bernd Gotsmann,Prineha Narang,Philip J. W. Moll###
(1686949, 1686951)
 We extract lMR from theSondheimer amplitude in the topological semi-metal WP2, at elevatedtemperatures up to T<missing VAR>sim 50K, in a range most relevant for hydrodynamictransport phenomena.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Sondheimer oscillations as a probe of non-ohmic flow in type-II Weyl semimetal WP$_2$|Maarten R. van Delft,Yaxian Wang,Carsten Putzke,Jacopo Oswald,Georgios Varnavides,Christina A. C. Garcia,Chunyu Guo,Heinz Schmid,Vicky Süss,Horst Borrmann,Jonas Diaz,Yan Sun,Claudia Felser,Bernd Gotsmann,Prineha Narang,Philip J. W. Moll###
(1686969, 1686969)
 We extract lMR from theSondheimer amplitude in the topological semi-metal WP2, at elevatedtemperatures up to T<missing VAR>sim 50K, in a range most relevant for hydrodynamictransport phenomena.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WP2
###Sondheimer oscillations as a probe of non-ohmic flow in type-II Weyl semimetal WP$_2$|Maarten R. van Delft,Yaxian Wang,Carsten Putzke,Jacopo Oswald,Georgios Varnavides,Christina A. C. Garcia,Chunyu Guo,Heinz Schmid,Vicky Süss,Horst Borrmann,Jonas Diaz,Yan Sun,Claudia Felser,Bernd Gotsmann,Prineha Narang,Philip J. W. Moll###
(1687040, 1687042)
 Our data on micrometer-sized devices are in excellentagreement with experimental reports of the large bulk lMR and thus confirmthat WP2 can be microfabricated without degradation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WP2
###Sondheimer oscillations as a probe of non-ohmic flow in type-II Weyl semimetal WP$_2$|Maarten R. van Delft,Yaxian Wang,Carsten Putzke,Jacopo Oswald,Georgios Varnavides,Christina A. C. Garcia,Chunyu Guo,Heinz Schmid,Vicky Süss,Horst Borrmann,Jonas Diaz,Yan Sun,Claudia Felser,Bernd Gotsmann,Prineha Narang,Philip J. W. Moll###
(1687116, 1687118)
 Indeed, the measuredscattering rates match well with those of theoretically predictedelectron-phonon scattering, thus supporting the notion of strong momentumexchange between electrons and phonons in WP2 at these temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

VAs2
###Magnetoresistance and Kondo effect in the nodal-line semimetal VAs$_2$|Shuijin Chen,Zhefeng Lou,Yuxing Zhou,Qin Chen,Binjie Xu,Jianhua Du,Jinhu Yang,Haangdong Wang,Minghu Fang###
(1687200, 1687202)
Magnetoresistance and Kondo effect in the nodal-line semimetal VAs2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 11, 'K', 3],[178.0, 0, 'demonstrates', 3],[272.0, 649, '%', 4],[276.0, 10, 'K', 4],[279.0, 9, 'T', 4],[451.0, 4, 's', 6]

H
###Magnetoresistance and Kondo effect in the nodal-line semimetal VAs$_2$|Shuijin Chen,Zhefeng Lou,Yuxing Zhou,Qin Chen,Binjie Xu,Jianhua Du,Jinhu Yang,Haangdong Wang,Minghu Fang###
(1687249, 1687249)
 We performed calculations of the electronic band structure and the Fermisurface as well as measured the longitudinal resistivity rhoxx(T<missing VAR>,H), Hallresistivity rhoxy(T<missing VAR>,H), and magnetic susceptibility as a function oftemperature and various magnetic fields for VAs2 with a monoclinic crystalstructure.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 11, 'K', 2],[131.0, 0, 'demonstrates', 2],[225.0, 649, '%', 3],[229.0, 10, 'K', 3],[232.0, 9, 'T', 3],[404.0, 4, 's', 5]

H
###Magnetoresistance and Kondo effect in the nodal-line semimetal VAs$_2$|Shuijin Chen,Zhefeng Lou,Yuxing Zhou,Qin Chen,Binjie Xu,Jianhua Du,Jinhu Yang,Haangdong Wang,Minghu Fang###
(1687263, 1687263)
 We performed calculations of the electronic band structure and the Fermisurface as well as measured the longitudinal resistivity rhoxx(T<missing VAR>,H), Hallresistivity rhoxy(T<missing VAR>,H), and magnetic susceptibility as a function oftemperature and various magnetic fields for VAs2 with a monoclinic crystalstructure.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 11, 'K', 2],[117.0, 0, 'demonstrates', 2],[211.0, 649, '%', 3],[215.0, 10, 'K', 3],[218.0, 9, 'T', 3],[390.0, 4, 's', 5]

VAs2
###Magnetoresistance and Kondo effect in the nodal-line semimetal VAs$_2$|Shuijin Chen,Zhefeng Lou,Yuxing Zhou,Qin Chen,Binjie Xu,Jianhua Du,Jinhu Yang,Haangdong Wang,Minghu Fang###
(1687294, 1687296)
 We performed calculations of the electronic band structure and the Fermisurface as well as measured the longitudinal resistivity rhoxx(T<missing VAR>,H), Hallresistivity rhoxy(T<missing VAR>,H), and magnetic susceptibility as a function oftemperature and various magnetic fields for VAs2 with a monoclinic crystalstructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 11, 'K', 2],[84.0, 0, 'demonstrates', 2],[178.0, 649, '%', 3],[182.0, 10, 'K', 3],[185.0, 9, 'T', 3],[357.0, 4, 's', 5]

VAs2
###Magnetoresistance and Kondo effect in the nodal-line semimetal VAs$_2$|Shuijin Chen,Zhefeng Lou,Yuxing Zhou,Qin Chen,Binjie Xu,Jianhua Du,Jinhu Yang,Haangdong Wang,Minghu Fang###
(1687322, 1687324)
 The band structure calculations show that VAs2 is a nodal-linesemimetal when spin-orbit coupling is ignored.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 11, 'K', 1],[56.0, 0, 'demonstrates', 1],[150.0, 649, '%', 2],[154.0, 10, 'K', 2],[157.0, 9, 'T', 2],[329.0, 4, 's', 4]

H
###Magnetoresistance and Kondo effect in the nodal-line semimetal VAs$_2$|Shuijin Chen,Zhefeng Lou,Yuxing Zhou,Qin Chen,Binjie Xu,Jianhua Du,Jinhu Yang,Haangdong Wang,Minghu Fang###
(1687378, 1687378)
 The emergence of a minimum ataround 11 K in rhoxx(T) measured at H  0 demonstrates that anadditional magnetic impurity (V4, S  1/2) occurs in VAs2 singlecrystals, evidenced by both the fitting of rhoxx(T) data and thesusceptibility measurements.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 11, 'K', 0],[2.0, 0, 'demonstrates', 0],[96.0, 649, '%', 1],[100.0, 10, 'K', 1],[103.0, 9, 'T', 1],[275.0, 4, 's', 3]

V4
###Magnetoresistance and Kondo effect in the nodal-line semimetal VAs$_2$|Shuijin Chen,Zhefeng Lou,Yuxing Zhou,Qin Chen,Binjie Xu,Jianhua Du,Jinhu Yang,Haangdong Wang,Minghu Fang###
(1687394, 1687395)
 The emergence of a minimum ataround 11 K in rhoxx(T) measured at H  0 demonstrates that anadditional magnetic impurity (V4, S  1/2) occurs in VAs2 singlecrystals, evidenced by both the fitting of rhoxx(T) data and thesusceptibility measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 11, 'K', 0],[14.0, 0, 'demonstrates', 0],[79.0, 649, '%', 1],[83.0, 10, 'K', 1],[86.0, 9, 'T', 1],[258.0, 4, 's', 3]

S
###Magnetoresistance and Kondo effect in the nodal-line semimetal VAs$_2$|Shuijin Chen,Zhefeng Lou,Yuxing Zhou,Qin Chen,Binjie Xu,Jianhua Du,Jinhu Yang,Haangdong Wang,Minghu Fang###
(1687398, 1687398)
 The emergence of a minimum ataround 11 K in rhoxx(T) measured at H  0 demonstrates that anadditional magnetic impurity (V4, S  1/2) occurs in VAs2 singlecrystals, evidenced by both the fitting of rhoxx(T) data and thesusceptibility measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 11, 'K', 0],[18.0, 0, 'demonstrates', 0],[76.0, 649, '%', 1],[80.0, 10, 'K', 1],[83.0, 9, 'T', 1],[255.0, 4, 's', 3]

VAs2
###Magnetoresistance and Kondo effect in the nodal-line semimetal VAs$_2$|Shuijin Chen,Zhefeng Lou,Yuxing Zhou,Qin Chen,Binjie Xu,Jianhua Du,Jinhu Yang,Haangdong Wang,Minghu Fang###
(1687410, 1687412)
 The emergence of a minimum ataround 11 K in rhoxx(T) measured at H  0 demonstrates that anadditional magnetic impurity (V4, S  1/2) occurs in VAs2 singlecrystals, evidenced by both the fitting of rhoxx(T) data and thesusceptibility measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 11, 'K', 0],[30.0, 0, 'demonstrates', 0],[62.0, 649, '%', 1],[66.0, 10, 'K', 1],[69.0, 9, 'T', 1],[241.0, 4, 's', 3]

VAs2
###Magnetoresistance and Kondo effect in the nodal-line semimetal VAs$_2$|Shuijin Chen,Zhefeng Lou,Yuxing Zhou,Qin Chen,Binjie Xu,Jianhua Du,Jinhu Yang,Haangdong Wang,Minghu Fang###
(1687525, 1687527)
 It was found that a large positivemagnetoresistance (MR) reaching 649% at 10 K and 9 T, its nearly quadraticfield dependence, and a field-induced up-turn behavior of rhoxx(T) emergealso in VAs2, although MR is not so large due to the existence of additionalscattering compared with other topological nontrival/trival semimetals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 11, 'K', 1],[145.0, 0, 'demonstrates', 1],[51.0, 649, '%', 0],[47.0, 10, 'K', 0],[44.0, 9, 'T', 0],[126.0, 4, 's', 2]

V
###Magnetoresistance and Kondo effect in the nodal-line semimetal VAs$_2$|Shuijin Chen,Zhefeng Lou,Yuxing Zhou,Qin Chen,Binjie Xu,Jianhua Du,Jinhu Yang,Haangdong Wang,Minghu Fang###
(1687647, 1687647)
 These results indicate that the compoundscontaining V (3d<missing VAR>3 4s2) element as a platform for studying the influence ofmagnetic impurities to the topological properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[283.0, 11, 'K', 3],[267.0, 0, 'demonstrates', 3],[173.0, 649, '%', 2],[169.0, 10, 'K', 2],[166.0, 9, 'T', 2],[6.0, 4, 's', 0]

Pt1-x
###Identifying the fingerprints of topological states by tuning magnetoresistance in a semimetal: the case of topological half-Heusler Pt1-xAuxLuSb|Shouvik Chatterjee,Felipe Crasto de Lima,John A. Logan,Yuan Fang,Hadass Inbar,Aranya Goswami,Connor Dempsey,Shoaib Khalid,Tobias Brown-Heft,Yu-Hao Chang,Taozhi Guo,Daniel Pennacchio,Nathaniel Wilson,Jason Dong,Shalinee Chikara,Alexey Suslov,Alexei V. Fedorov,Dan Read,Jennifer Cano,Anderson Janotti,Christopher J. Palmstrom###
(1687733, 1687736)
Identifying the fingerprints of topological states by tuning magnetoresistance in a semimetal the case of topological half-Heusler Pt1-xAuxLuSb.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

LuSb
###Identifying the fingerprints of topological states by tuning magnetoresistance in a semimetal: the case of topological half-Heusler Pt1-xAuxLuSb|Shouvik Chatterjee,Felipe Crasto de Lima,John A. Logan,Yuan Fang,Hadass Inbar,Aranya Goswami,Connor Dempsey,Shoaib Khalid,Tobias Brown-Heft,Yu-Hao Chang,Taozhi Guo,Daniel Pennacchio,Nathaniel Wilson,Jason Dong,Shalinee Chikara,Alexey Suslov,Alexei V. Fedorov,Dan Read,Jennifer Cano,Anderson Janotti,Christopher J. Palmstrom###
(1687738, 1687739)
Identifying the fingerprints of topological states by tuning magnetoresistance in a semimetal the case of topological half-Heusler Pt1-xAuxLuSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Identifying the fingerprints of topological states by tuning magnetoresistance in a semimetal: the case of topological half-Heusler Pt1-xAuxLuSb|Shouvik Chatterjee,Felipe Crasto de Lima,John A. Logan,Yuan Fang,Hadass Inbar,Aranya Goswami,Connor Dempsey,Shoaib Khalid,Tobias Brown-Heft,Yu-Hao Chang,Taozhi Guo,Daniel Pennacchio,Nathaniel Wilson,Jason Dong,Shalinee Chikara,Alexey Suslov,Alexei V. Fedorov,Dan Read,Jennifer Cano,Anderson Janotti,Christopher J. Palmstrom###
(1687857, 1687857)
Here, by reducing the coupling between the topological surface states (T<missing VAR>SS) andthe bulk carriers we controllably tune the LMR behavior in Pt1-xAuxLuSb intodistinct plateaus in Hall resistance, which we show arise from a quantum Hallphase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt1-x
###Identifying the fingerprints of topological states by tuning magnetoresistance in a semimetal: the case of topological half-Heusler Pt1-xAuxLuSb|Shouvik Chatterjee,Felipe Crasto de Lima,John A. Logan,Yuan Fang,Hadass Inbar,Aranya Goswami,Connor Dempsey,Shoaib Khalid,Tobias Brown-Heft,Yu-Hao Chang,Taozhi Guo,Daniel Pennacchio,Nathaniel Wilson,Jason Dong,Shalinee Chikara,Alexey Suslov,Alexei V. Fedorov,Dan Read,Jennifer Cano,Anderson Janotti,Christopher J. Palmstrom###
(1687885, 1687888)
Here, by reducing the coupling between the topological surface states (T<missing VAR>SS) andthe bulk carriers we controllably tune the LMR behavior in Pt1-xAuxLuSb intodistinct plateaus in Hall resistance, which we show arise from a quantum Hallphase.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

LuSb
###Identifying the fingerprints of topological states by tuning magnetoresistance in a semimetal: the case of topological half-Heusler Pt1-xAuxLuSb|Shouvik Chatterjee,Felipe Crasto de Lima,John A. Logan,Yuan Fang,Hadass Inbar,Aranya Goswami,Connor Dempsey,Shoaib Khalid,Tobias Brown-Heft,Yu-Hao Chang,Taozhi Guo,Daniel Pennacchio,Nathaniel Wilson,Jason Dong,Shalinee Chikara,Alexey Suslov,Alexei V. Fedorov,Dan Read,Jennifer Cano,Anderson Janotti,Christopher J. Palmstrom###
(1687890, 1687891)
Here, by reducing the coupling between the topological surface states (T<missing VAR>SS) andthe bulk carriers we controllably tune the LMR behavior in Pt1-xAuxLuSb intodistinct plateaus in Hall resistance, which we show arise from a quantum Hallphase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SS
###Identifying the fingerprints of topological states by tuning magnetoresistance in a semimetal: the case of topological half-Heusler Pt1-xAuxLuSb|Shouvik Chatterjee,Felipe Crasto de Lima,John A. Logan,Yuan Fang,Hadass Inbar,Aranya Goswami,Connor Dempsey,Shoaib Khalid,Tobias Brown-Heft,Yu-Hao Chang,Taozhi Guo,Daniel Pennacchio,Nathaniel Wilson,Jason Dong,Shalinee Chikara,Alexey Suslov,Alexei V. Fedorov,Dan Read,Jennifer Cano,Anderson Janotti,Christopher J. Palmstrom###
(1687996, 1687997)
 This allowed us to reveal how smearing of the Landau levels, whichotherwise give rise to a quantum Hall phase, results in an LMR behavior due tostrong interaction between the T<missing VAR>SS with a positive g<missing VAR>-factor and the bulkcarriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Identifying the fingerprints of topological states by tuning magnetoresistance in a semimetal: the case of topological half-Heusler Pt1-xAuxLuSb|Shouvik Chatterjee,Felipe Crasto de Lima,John A. Logan,Yuan Fang,Hadass Inbar,Aranya Goswami,Connor Dempsey,Shoaib Khalid,Tobias Brown-Heft,Yu-Hao Chang,Taozhi Guo,Daniel Pennacchio,Nathaniel Wilson,Jason Dong,Shalinee Chikara,Alexey Suslov,Alexei V. Fedorov,Dan Read,Jennifer Cano,Anderson Janotti,Christopher J. Palmstrom###
(1688074, 1688074)
 In addition, our work outlines astrategy to reveal macroscopic physical observables of T<missing VAR>SS in compounds with asemi-metallic bulk band structure, as is the case in multi-functional Heuslercompounds, thereby opening up opportunities for their utilization in hybridquantum structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SS
###Identifying the fingerprints of topological states by tuning magnetoresistance in a semimetal: the case of topological half-Heusler Pt1-xAuxLuSb|Shouvik Chatterjee,Felipe Crasto de Lima,John A. Logan,Yuan Fang,Hadass Inbar,Aranya Goswami,Connor Dempsey,Shoaib Khalid,Tobias Brown-Heft,Yu-Hao Chang,Taozhi Guo,Daniel Pennacchio,Nathaniel Wilson,Jason Dong,Shalinee Chikara,Alexey Suslov,Alexei V. Fedorov,Dan Read,Jennifer Cano,Anderson Janotti,Christopher J. Palmstrom###
(1688103, 1688104)
 In addition, our work outlines astrategy to reveal macroscopic physical observables of T<missing VAR>SS in compounds with asemi-metallic bulk band structure, as is the case in multi-functional Heuslercompounds, thereby opening up opportunities for their utilization in hybridquantum structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoSi2/TiSi2
###Observation of triplet superconductivity in CoSi$_2$/TiSi$_2$ heterostructures|Shao-Pin Chiu,C. C. Tsuei,Sheng-Shiuan Yeh,Fu-Chun Zhang,Stefan Kirchner,Juhn-Jong Lin###
(1688188, 1688194)
Observation of triplet superconductivity in CoSi2/TiSi2 heterostructures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[109.0, 1.5, 'K', 3]

CoSi2/TiSi2
###Observation of triplet superconductivity in CoSi$_2$/TiSi$_2$ heterostructures|Shao-Pin Chiu,C. C. Tsuei,Sheng-Shiuan Yeh,Fu-Chun Zhang,Stefan Kirchner,Juhn-Jong Lin###
(1688261, 1688267)
 Here we report our observation of triplet superconductivity innonmagnetic CoSi2/TiSi2 heterostructures on silicon.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[36.0, 1.5, 'K', 1]

CoSi2
###Observation of triplet superconductivity in CoSi$_2$/TiSi$_2$ heterostructures|Shao-Pin Chiu,C. C. Tsuei,Sheng-Shiuan Yeh,Fu-Chun Zhang,Stefan Kirchner,Juhn-Jong Lin###
(1688276, 1688278)
 CoSi2 undergoes asharp superconducting transition at a critical temperature Tc approx 1.5 K,while TiSi2 is a normal metal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 1.5, 'K', 0]

TiSi2
###Observation of triplet superconductivity in CoSi$_2$/TiSi$_2$ heterostructures|Shao-Pin Chiu,C. C. Tsuei,Sheng-Shiuan Yeh,Fu-Chun Zhang,Stefan Kirchner,Juhn-Jong Lin###
(1688309, 1688311)
 CoSi2 undergoes asharp superconducting transition at a critical temperature Tc approx 1.5 K,while TiSi2 is a normal metal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 1.5, 'K', 0]

CoSi2/TiSi2
###Observation of triplet superconductivity in CoSi$_2$/TiSi$_2$ heterostructures|Shao-Pin Chiu,C. C. Tsuei,Sheng-Shiuan Yeh,Fu-Chun Zhang,Stefan Kirchner,Juhn-Jong Lin###
(1688339, 1688345)
 We investigate conductance spectra of bothtwo-terminal CoSi2/TiSi2 tunnel junctions and three-terminal T<missing VAR>-shapedCoSi2/TiSi2 superconducting proximity structures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[36.0, 1.5, 'K', 1]

CoSi2/TiSi2
###Observation of triplet superconductivity in CoSi$_2$/TiSi$_2$ heterostructures|Shao-Pin Chiu,C. C. Tsuei,Sheng-Shiuan Yeh,Fu-Chun Zhang,Stefan Kirchner,Juhn-Jong Lin###
(1688362, 1688368)
 We investigate conductance spectra of bothtwo-terminal CoSi2/TiSi2 tunnel junctions and three-terminal T<missing VAR>-shapedCoSi2/TiSi2 superconducting proximity structures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[59.0, 1.5, 'K', 1]

CoSi2
###Observation of triplet superconductivity in CoSi$_2$/TiSi$_2$ heterostructures|Shao-Pin Chiu,C. C. Tsuei,Sheng-Shiuan Yeh,Fu-Chun Zhang,Stefan Kirchner,Juhn-Jong Lin###
(1688396, 1688398)
 We report anunexpectedly large spin-orbit coupling in CoSi2 heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 1.5, 'K', 2]

CoSi2/TiSi2
###Observation of triplet superconductivity in CoSi$_2$/TiSi$_2$ heterostructures|Shao-Pin Chiu,C. C. Tsuei,Sheng-Shiuan Yeh,Fu-Chun Zhang,Stefan Kirchner,Juhn-Jong Lin###
(1688538, 1688544)
 These three independent and complementaryobservations are indicative of chiral p<missing VAR>-wave pairing in CoSi2/TiSi2heterostructures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[235.0, 1.5, 'K', 4]

CoSi2
###Observation of triplet superconductivity in CoSi$_2$/TiSi$_2$ heterostructures|Shao-Pin Chiu,C. C. Tsuei,Sheng-Shiuan Yeh,Fu-Chun Zhang,Stefan Kirchner,Juhn-Jong Lin###
(1688571, 1688573)
 This chiral triplet superconductivity and the excellentfabrication compatibility of CoSi2 and TiSi2 with present-day siliconintegrated-circuit technology facilitate full scalability for potential use inquantum-computing devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[268.0, 1.5, 'K', 5]

TiSi2
###Observation of triplet superconductivity in CoSi$_2$/TiSi$_2$ heterostructures|Shao-Pin Chiu,C. C. Tsuei,Sheng-Shiuan Yeh,Fu-Chun Zhang,Stefan Kirchner,Juhn-Jong Lin###
(1688577, 1688579)
 This chiral triplet superconductivity and the excellentfabrication compatibility of CoSi2 and TiSi2 with present-day siliconintegrated-circuit technology facilitate full scalability for potential use inquantum-computing devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[274.0, 1.5, 'K', 5]

CaMnO3/CaIrO3
###Giant anisotropic magnetoresistance with dual-four-fold symmetry in CaMnO3/CaIrO3 heterostructures|Suman Sardar,Megha Vagadia,Tejas Tank Sarmistha Das,Brandon Gunn,Parul Pandey,R. Hübner,Fanny Rodolakis,Gilberto Fabbris,Yongseong Choi,Daniel Haskel,Alex Frano,D. S. Rana###
(1688644, 1688652)
Giant anisotropic magnetoresistance with dual-four-fold symmetry in CaMnO3/CaIrO3 heterostructures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[158.0, 70, '%', 3]

In
###Giant anisotropic magnetoresistance with dual-four-fold symmetry in CaMnO3/CaIrO3 heterostructures|Suman Sardar,Megha Vagadia,Tejas Tank Sarmistha Das,Brandon Gunn,Parul Pandey,R. Hübner,Fanny Rodolakis,Gilberto Fabbris,Yongseong Choi,Daniel Haskel,Alex Frano,D. S. Rana###
(1688772, 1688772)
 In this study on CaMnO3/CaIrO3heterostructures, we report a unique dual-four-fold symmetric 70% AMR; a signaltwo orders of magnitude larger than previously observed in similar systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 70, '%', 0]

CaMnO3/CaIrO3
###Giant anisotropic magnetoresistance with dual-four-fold symmetry in CaMnO3/CaIrO3 heterostructures|Suman Sardar,Megha Vagadia,Tejas Tank Sarmistha Das,Brandon Gunn,Parul Pandey,R. Hübner,Fanny Rodolakis,Gilberto Fabbris,Yongseong Choi,Daniel Haskel,Alex Frano,D. S. Rana###
(1688780, 1688788)
 In this study on CaMnO3/CaIrO3heterostructures, we report a unique dual-four-fold symmetric 70% AMR; a signaltwo orders of magnitude larger than previously observed in similar systems.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[22.0, 70, '%', 0]

MnBi2Te4
###Detection of magnetic gap in the topological surface states of MnBi2Te4|Haoran Ji,Yanzhao Liu,He Wang,Jiawei Luo,Jiaheng Li,Hao Li,Yang Wu,Yong Xu,Jian Wang###
(1689097, 1689101)
Detection of magnetic gap in the topological surface states of MnBi2Te4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[229.0, 50, 'meV', 5]

MnBi2Te4
###Detection of magnetic gap in the topological surface states of MnBi2Te4|Haoran Ji,Yanzhao Liu,He Wang,Jiawei Luo,Jiaheng Li,Hao Li,Yang Wu,Yong Xu,Jian Wang###
(1689115, 1689119)
 Recently, intrinsic antiferromagnetic topological insulator MnBi2Te4 hasdrawn intense research interest and leads to plenty of significant progress inphysics and materials science by hosting quantum anomalous Hall effect, axioninsulator state, and other quantum phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[211.0, 50, 'meV', 4]

MnBi2Te4
###Detection of magnetic gap in the topological surface states of MnBi2Te4|Haoran Ji,Yanzhao Liu,He Wang,Jiawei Luo,Jiaheng Li,Hao Li,Yang Wu,Yong Xu,Jian Wang###
(1689245, 1689249)
 An essential ingredient to realizethese quantum states is the magnetic gap in the topological surface statesinduced by the out-of-plane ferromagnetism on the surface of MnBi2Te4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 50, 'meV', 3]

In
###Detection of magnetic gap in the topological surface states of MnBi2Te4|Haoran Ji,Yanzhao Liu,He Wang,Jiawei Luo,Jiaheng Li,Hao Li,Yang Wu,Yong Xu,Jian Wang###
(1689309, 1689309)
 In agreement with theoretical calculations, the gap size isaround 50 meV, which vanishes as the sample becomes paramagnetic withincreasing temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 50, 'meV', 0]

MnBi2Te4
###Detection of magnetic gap in the topological surface states of MnBi2Te4|Haoran Ji,Yanzhao Liu,He Wang,Jiawei Luo,Jiaheng Li,Hao Li,Yang Wu,Yong Xu,Jian Wang###
(1689479, 1689483)
 Combining these results, themagnetism-induced gap in topological surface states of MnBi2Te4 is revealed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 50, 'meV', 3]

S/F
###Giant anisotropic magnetoresistance in Ising superconductor-magnetic insulator tunnel junctions|Kaifei Kang,Shengwei Jiang,Helmuth Berger,Kenji Watanabe,Takashi Taniguchi,László Forró,Jie Shan,Kin Fai Mak###
(1689693, 1689695)
 Here wereport tunneling spectroscopy under an in-plane magnetic field ofsuperconductor-ferromagnet-superconductor (S/F/S) tunnel junctions that aremade of 2D Ising superconductor NbSe2 and ferromagnetic insulator CrBr3.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[17.0, 2, 'D', 0],[45.0, 100, '%', 1],[191.0, 2, 'K', 3]

S
###Giant anisotropic magnetoresistance in Ising superconductor-magnetic insulator tunnel junctions|Kaifei Kang,Shengwei Jiang,Helmuth Berger,Kenji Watanabe,Takashi Taniguchi,László Forró,Jie Shan,Kin Fai Mak###
(1689697, 1689697)
 Here wereport tunneling spectroscopy under an in-plane magnetic field ofsuperconductor-ferromagnet-superconductor (S/F/S) tunnel junctions that aremade of 2D Ising superconductor NbSe2 and ferromagnetic insulator CrBr3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 2, 'D', 0],[43.0, 100, '%', 1],[189.0, 2, 'K', 3]

NbSe2
###Giant anisotropic magnetoresistance in Ising superconductor-magnetic insulator tunnel junctions|Kaifei Kang,Shengwei Jiang,Helmuth Berger,Kenji Watanabe,Takashi Taniguchi,László Forró,Jie Shan,Kin Fai Mak###
(1689718, 1689720)
 Here wereport tunneling spectroscopy under an in-plane magnetic field ofsuperconductor-ferromagnet-superconductor (S/F/S) tunnel junctions that aremade of 2D Ising superconductor NbSe2 and ferromagnetic insulator CrBr3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 2, 'D', 0],[20.0, 100, '%', 1],[166.0, 2, 'K', 3]

CrBr3
###Giant anisotropic magnetoresistance in Ising superconductor-magnetic insulator tunnel junctions|Kaifei Kang,Shengwei Jiang,Helmuth Berger,Kenji Watanabe,Takashi Taniguchi,László Forró,Jie Shan,Kin Fai Mak###
(1689728, 1689730)
 Here wereport tunneling spectroscopy under an in-plane magnetic field ofsuperconductor-ferromagnet-superconductor (S/F/S) tunnel junctions that aremade of 2D Ising superconductor NbSe2 and ferromagnetic insulator CrBr3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 2, 'D', 0],[10.0, 100, '%', 1],[156.0, 2, 'K', 3]

F
###Magnetic field-tuned quantum criticality in optimally electron-doped cuprate thin films|Xu Zhang,Heshan Yu,Qihong Chen,Runqiu Yang,Ge He,Ziquan Lin,Qian Li,Jie Yuan,Beiyi Zhu,Liang Li,Yi-feng Yang,Tao Xiang,Rong-Gen Cai,Anna Kusmartseva,F. V. Kusmartsev,Jun-Feng Wang,Kui Jin###
(1689974, 1689974)
 Antiferromagnetic (AF) spin fluctuations are commonly believed to play a keyrole in electron pairing of cuprate superconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 60, 'T', 3]

In
###Magnetic field-tuned quantum criticality in optimally electron-doped cuprate thin films|Xu Zhang,Heshan Yu,Qihong Chen,Runqiu Yang,Ge He,Ziquan Lin,Qian Li,Jie Yuan,Beiyi Zhu,Liang Li,Yi-feng Yang,Tao Xiang,Rong-Gen Cai,Anna Kusmartseva,F. V. Kusmartsev,Jun-Feng Wang,Kui Jin###
(1690011, 1690011)
 In electron-dopedcuprates, it is still in paradox about the interplay among different electronicstates in quantum perturbations, especially between superconducting andmagnetic states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 60, 'T', 2]

La2-x
###Magnetic field-tuned quantum criticality in optimally electron-doped cuprate thin films|Xu Zhang,Heshan Yu,Qihong Chen,Runqiu Yang,Ge He,Ziquan Lin,Qian Li,Jie Yuan,Beiyi Zhu,Liang Li,Yi-feng Yang,Tao Xiang,Rong-Gen Cai,Anna Kusmartseva,F. V. Kusmartsev,Jun-Feng Wang,Kui Jin###
(1690089, 1690092)
 Here, we report a systematic transport study oncation-optimized La2-xCexCuO4 (x<missing VAR>  0.10) thin films in high magnetic fields.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[43.0, 60, 'T', 1]

CuO4
###Magnetic field-tuned quantum criticality in optimally electron-doped cuprate thin films|Xu Zhang,Heshan Yu,Qihong Chen,Runqiu Yang,Ge He,Ziquan Lin,Qian Li,Jie Yuan,Beiyi Zhu,Liang Li,Yi-feng Yang,Tao Xiang,Rong-Gen Cai,Anna Kusmartseva,F. V. Kusmartsev,Jun-Feng Wang,Kui Jin###
(1690094, 1690096)
 Here, we report a systematic transport study oncation-optimized La2-xCexCuO4 (x<missing VAR>  0.10) thin films in high magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 60, 'T', 1]

F
###Magnetic field-tuned quantum criticality in optimally electron-doped cuprate thin films|Xu Zhang,Heshan Yu,Qihong Chen,Runqiu Yang,Ge He,Ziquan Lin,Qian Li,Jie Yuan,Beiyi Zhu,Liang Li,Yi-feng Yang,Tao Xiang,Rong-Gen Cai,Anna Kusmartseva,F. V. Kusmartsev,Jun-Feng Wang,Kui Jin###
(1690126, 1690126)
 Wefind an AF quantum phase transition near 60 T, where the Hall number jumps fromn<missing VAR>H -x<missing VAR> to n<missing VAR>H  1-x<missing VAR>, resembling the change of n<missing VAR>H at the AF boundary (x<missing VAR>AF  0.14)tuned by Ce doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 60, 'T', 0]

H
###Magnetic field-tuned quantum criticality in optimally electron-doped cuprate thin films|Xu Zhang,Heshan Yu,Qihong Chen,Runqiu Yang,Ge He,Ziquan Lin,Qian Li,Jie Yuan,Beiyi Zhu,Liang Li,Yi-feng Yang,Tao Xiang,Rong-Gen Cai,Anna Kusmartseva,F. V. Kusmartsev,Jun-Feng Wang,Kui Jin###
(1690152, 1690152)
 Wefind an AF quantum phase transition near 60 T, where the Hall number jumps fromn<missing VAR>H -x<missing VAR> to n<missing VAR>H  1-x<missing VAR>, resembling the change of n<missing VAR>H at the AF boundary (x<missing VAR>AF  0.14)tuned by Ce doping.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 60, 'T', 0]

H
###Magnetic field-tuned quantum criticality in optimally electron-doped cuprate thin films|Xu Zhang,Heshan Yu,Qihong Chen,Runqiu Yang,Ge He,Ziquan Lin,Qian Li,Jie Yuan,Beiyi Zhu,Liang Li,Yi-feng Yang,Tao Xiang,Rong-Gen Cai,Anna Kusmartseva,F. V. Kusmartsev,Jun-Feng Wang,Kui Jin###
(1690160, 1690160)
 Wefind an AF quantum phase transition near 60 T, where the Hall number jumps fromn<missing VAR>H -x<missing VAR> to n<missing VAR>H  1-x<missing VAR>, resembling the change of n<missing VAR>H at the AF boundary (x<missing VAR>AF  0.14)tuned by Ce doping.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 60, 'T', 0]

H
###Magnetic field-tuned quantum criticality in optimally electron-doped cuprate thin films|Xu Zhang,Heshan Yu,Qihong Chen,Runqiu Yang,Ge He,Ziquan Lin,Qian Li,Jie Yuan,Beiyi Zhu,Liang Li,Yi-feng Yang,Tao Xiang,Rong-Gen Cai,Anna Kusmartseva,F. V. Kusmartsev,Jun-Feng Wang,Kui Jin###
(1690177, 1690177)
 Wefind an AF quantum phase transition near 60 T, where the Hall number jumps fromn<missing VAR>H -x<missing VAR> to n<missing VAR>H  1-x<missing VAR>, resembling the change of n<missing VAR>H at the AF boundary (x<missing VAR>AF  0.14)tuned by Ce doping.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 60, 'T', 0]

F
###Magnetic field-tuned quantum criticality in optimally electron-doped cuprate thin films|Xu Zhang,Heshan Yu,Qihong Chen,Runqiu Yang,Ge He,Ziquan Lin,Qian Li,Jie Yuan,Beiyi Zhu,Liang Li,Yi-feng Yang,Tao Xiang,Rong-Gen Cai,Anna Kusmartseva,F. V. Kusmartsev,Jun-Feng Wang,Kui Jin###
(1690184, 1690184)
 Wefind an AF quantum phase transition near 60 T, where the Hall number jumps fromn<missing VAR>H -x<missing VAR> to n<missing VAR>H  1-x<missing VAR>, resembling the change of n<missing VAR>H at the AF boundary (x<missing VAR>AF  0.14)tuned by Ce doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 60, 'T', 0]

F
###Magnetic field-tuned quantum criticality in optimally electron-doped cuprate thin films|Xu Zhang,Heshan Yu,Qihong Chen,Runqiu Yang,Ge He,Ziquan Lin,Qian Li,Jie Yuan,Beiyi Zhu,Liang Li,Yi-feng Yang,Tao Xiang,Rong-Gen Cai,Anna Kusmartseva,F. V. Kusmartsev,Jun-Feng Wang,Kui Jin###
(1690191, 1690191)
 Wefind an AF quantum phase transition near 60 T, where the Hall number jumps fromn<missing VAR>H -x<missing VAR> to n<missing VAR>H  1-x<missing VAR>, resembling the change of n<missing VAR>H at the AF boundary (x<missing VAR>AF  0.14)tuned by Ce doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 60, 'T', 0]

Ce
###Magnetic field-tuned quantum criticality in optimally electron-doped cuprate thin films|Xu Zhang,Heshan Yu,Qihong Chen,Runqiu Yang,Ge He,Ziquan Lin,Qian Li,Jie Yuan,Beiyi Zhu,Liang Li,Yi-feng Yang,Tao Xiang,Rong-Gen Cai,Anna Kusmartseva,F. V. Kusmartsev,Jun-Feng Wang,Kui Jin###
(1690202, 1690202)
 Wefind an AF quantum phase transition near 60 T, where the Hall number jumps fromn<missing VAR>H -x<missing VAR> to n<missing VAR>H  1-x<missing VAR>, resembling the change of n<missing VAR>H at the AF boundary (x<missing VAR>AF  0.14)tuned by Ce doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 60, 'T', 0]

In
###Magnetic field-tuned quantum criticality in optimally electron-doped cuprate thin films|Xu Zhang,Heshan Yu,Qihong Chen,Runqiu Yang,Ge He,Ziquan Lin,Qian Li,Jie Yuan,Beiyi Zhu,Liang Li,Yi-feng Yang,Tao Xiang,Rong-Gen Cai,Anna Kusmartseva,F. V. Kusmartsev,Jun-Feng Wang,Kui Jin###
(1690207, 1690207)
 In the AF region a spin dependent state manifestinganomalous positive magnetoresistance is observed, which is closely related tosuperconductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 60, 'T', 1]

F
###Magnetic field-tuned quantum criticality in optimally electron-doped cuprate thin films|Xu Zhang,Heshan Yu,Qihong Chen,Runqiu Yang,Ge He,Ziquan Lin,Qian Li,Jie Yuan,Beiyi Zhu,Liang Li,Yi-feng Yang,Tao Xiang,Rong-Gen Cai,Anna Kusmartseva,F. V. Kusmartsev,Jun-Feng Wang,Kui Jin###
(1690212, 1690212)
 In the AF region a spin dependent state manifestinganomalous positive magnetoresistance is observed, which is closely related tosuperconductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 60, 'T', 1]

F
###Magnetic field-tuned quantum criticality in optimally electron-doped cuprate thin films|Xu Zhang,Heshan Yu,Qihong Chen,Runqiu Yang,Ge He,Ziquan Lin,Qian Li,Jie Yuan,Beiyi Zhu,Liang Li,Yi-feng Yang,Tao Xiang,Rong-Gen Cai,Anna Kusmartseva,F. V. Kusmartsev,Jun-Feng Wang,Kui Jin###
(1690257, 1690257)
 Once the AF state is suppressed by magnetic field, apolarized ferromagnetic state is predicted, reminiscent of the recentlyreported ferromagnetic state at the quantum endpoint of the superconductingdome by Ce doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 60, 'T', 2]

Ce
###Magnetic field-tuned quantum criticality in optimally electron-doped cuprate thin films|Xu Zhang,Heshan Yu,Qihong Chen,Runqiu Yang,Ge He,Ziquan Lin,Qian Li,Jie Yuan,Beiyi Zhu,Liang Li,Yi-feng Yang,Tao Xiang,Rong-Gen Cai,Anna Kusmartseva,F. V. Kusmartsev,Jun-Feng Wang,Kui Jin###
(1690320, 1690320)
 Once the AF state is suppressed by magnetic field, apolarized ferromagnetic state is predicted, reminiscent of the recentlyreported ferromagnetic state at the quantum endpoint of the superconductingdome by Ce doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[185.0, 60, 'T', 2]

Ru
###Structural and transport properties of highly Ru-deficient SrRu0.7O3 thin films prepared by molecular beam epitaxy: comparison with stoichiometric SrRuO3|Yuki K. Wakabayashi,Shingo Kaneta-Takada,Yoshiharu Krockenberger,Kosuke Takiguchi,Shinobu Ohya,Masaaki Tanaka,Yoshitaka Taniyasu,Hideki Yamamoto###
(1690406, 1690406)
Structural and transport properties of highly Ru-deficient SrRu0.7O3 thin films prepared by molecular beam epitaxy comparison with stoichiometric SrRuO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[342.0, 140, 'K', 5],[364.0, 150, 'K', 5],[380.0, 30, '%', 6],[407.0, 5, 'nm', 6]

SrRu0.7O3
###Structural and transport properties of highly Ru-deficient SrRu0.7O3 thin films prepared by molecular beam epitaxy: comparison with stoichiometric SrRuO3|Yuki K. Wakabayashi,Shingo Kaneta-Takada,Yoshiharu Krockenberger,Kosuke Takiguchi,Shinobu Ohya,Masaaki Tanaka,Yoshitaka Taniyasu,Hideki Yamamoto###
(1690410, 1690414)
Structural and transport properties of highly Ru-deficient SrRu0.7O3 thin films prepared by molecular beam epitaxy comparison with stoichiometric SrRuO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6382978723404255,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2127659574468085,0,0,0,0,0,0.14893617021276595,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[334.0, 140, 'K', 5],[356.0, 150, 'K', 5],[372.0, 30, '%', 6],[399.0, 5, 'nm', 6]

SrRuO3
###Structural and transport properties of highly Ru-deficient SrRu0.7O3 thin films prepared by molecular beam epitaxy: comparison with stoichiometric SrRuO3|Yuki K. Wakabayashi,Shingo Kaneta-Takada,Yoshiharu Krockenberger,Kosuke Takiguchi,Shinobu Ohya,Masaaki Tanaka,Yoshitaka Taniyasu,Hideki Yamamoto###
(1690436, 1690439)
Structural and transport properties of highly Ru-deficient SrRu0.7O3 thin films prepared by molecular beam epitaxy comparison with stoichiometric SrRuO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[309.0, 140, 'K', 5],[331.0, 150, 'K', 5],[347.0, 30, '%', 6],[374.0, 5, 'nm', 6]

Ru
###Structural and transport properties of highly Ru-deficient SrRu0.7O3 thin films prepared by molecular beam epitaxy: comparison with stoichiometric SrRuO3|Yuki K. Wakabayashi,Shingo Kaneta-Takada,Yoshiharu Krockenberger,Kosuke Takiguchi,Shinobu Ohya,Masaaki Tanaka,Yoshitaka Taniyasu,Hideki Yamamoto###
(1690458, 1690458)
 We investigate structural and transport properties of highly Ru-deficientSrRu0.7O3 thin films prepared by molecular beam epitaxy on (001) SrTiO3substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[290.0, 140, 'K', 4],[312.0, 150, 'K', 4],[328.0, 30, '%', 5],[355.0, 5, 'nm', 5]

SrRu0.7O3
###Structural and transport properties of highly Ru-deficient SrRu0.7O3 thin films prepared by molecular beam epitaxy: comparison with stoichiometric SrRuO3|Yuki K. Wakabayashi,Shingo Kaneta-Takada,Yoshiharu Krockenberger,Kosuke Takiguchi,Shinobu Ohya,Masaaki Tanaka,Yoshitaka Taniyasu,Hideki Yamamoto###
(1690463, 1690467)
 We investigate structural and transport properties of highly Ru-deficientSrRu0.7O3 thin films prepared by molecular beam epitaxy on (001) SrTiO3substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6382978723404255,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2127659574468085,0,0,0,0,0,0.14893617021276595,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[281.0, 140, 'K', 4],[303.0, 150, 'K', 4],[319.0, 30, '%', 5],[346.0, 5, 'nm', 5]

SrTiO3
###Structural and transport properties of highly Ru-deficient SrRu0.7O3 thin films prepared by molecular beam epitaxy: comparison with stoichiometric SrRuO3|Yuki K. Wakabayashi,Shingo Kaneta-Takada,Yoshiharu Krockenberger,Kosuke Takiguchi,Shinobu Ohya,Masaaki Tanaka,Yoshitaka Taniyasu,Hideki Yamamoto###
(1690489, 1690492)
 We investigate structural and transport properties of highly Ru-deficientSrRu0.7O3 thin films prepared by molecular beam epitaxy on (001) SrTiO3substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[256.0, 140, 'K', 4],[278.0, 150, 'K', 4],[294.0, 30, '%', 5],[321.0, 5, 'nm', 5]

Ru
###Structural and transport properties of highly Ru-deficient SrRu0.7O3 thin films prepared by molecular beam epitaxy: comparison with stoichiometric SrRuO3|Yuki K. Wakabayashi,Shingo Kaneta-Takada,Yoshiharu Krockenberger,Kosuke Takiguchi,Shinobu Ohya,Masaaki Tanaka,Yoshitaka Taniyasu,Hideki Yamamoto###
(1690526, 1690526)
 To distinguish the influence of the two types of disorders in thefilms, Ru vacancies within lattices and disorders near the interface, SrRu0.7O3thin films with various thicknesses (t<missing VAR>  1-60 nm) were prepared.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[222.0, 140, 'K', 3],[244.0, 150, 'K', 3],[260.0, 30, '%', 4],[287.0, 5, 'nm', 4]

SrRu0.7O3
###Structural and transport properties of highly Ru-deficient SrRu0.7O3 thin films prepared by molecular beam epitaxy: comparison with stoichiometric SrRuO3|Yuki K. Wakabayashi,Shingo Kaneta-Takada,Yoshiharu Krockenberger,Kosuke Takiguchi,Shinobu Ohya,Masaaki Tanaka,Yoshitaka Taniyasu,Hideki Yamamoto###
(1690545, 1690549)
 To distinguish the influence of the two types of disorders in thefilms, Ru vacancies within lattices and disorders near the interface, SrRu0.7O3thin films with various thicknesses (t<missing VAR>  1-60 nm) were prepared.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6382978723404255,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2127659574468085,0,0,0,0,0,0.14893617021276595,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[199.0, 140, 'K', 3],[221.0, 150, 'K', 3],[237.0, 30, '%', 4],[264.0, 5, 'nm', 4]

Sr
###Structural and transport properties of highly Ru-deficient SrRu0.7O3 thin films prepared by molecular beam epitaxy: comparison with stoichiometric SrRuO3|Yuki K. Wakabayashi,Shingo Kaneta-Takada,Yoshiharu Krockenberger,Kosuke Takiguchi,Shinobu Ohya,Masaaki Tanaka,Yoshitaka Taniyasu,Hideki Yamamoto###
(1690671, 1690671)
Structural characterizations revealed that the crystallinity, in terms of theSr and O sublattices, of SrRu0.7O3 thin films, is as high as that of theultrahigh-quality SrRuO3 ones.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 140, 'K', 1],[99.0, 150, 'K', 1],[115.0, 30, '%', 2],[142.0, 5, 'nm', 2]

O
###Structural and transport properties of highly Ru-deficient SrRu0.7O3 thin films prepared by molecular beam epitaxy: comparison with stoichiometric SrRuO3|Yuki K. Wakabayashi,Shingo Kaneta-Takada,Yoshiharu Krockenberger,Kosuke Takiguchi,Shinobu Ohya,Masaaki Tanaka,Yoshitaka Taniyasu,Hideki Yamamoto###
(1690675, 1690675)
Structural characterizations revealed that the crystallinity, in terms of theSr and O sublattices, of SrRu0.7O3 thin films, is as high as that of theultrahigh-quality SrRuO3 ones.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 140, 'K', 1],[95.0, 150, 'K', 1],[111.0, 30, '%', 2],[138.0, 5, 'nm', 2]

SrRu0.7O3
###Structural and transport properties of highly Ru-deficient SrRu0.7O3 thin films prepared by molecular beam epitaxy: comparison with stoichiometric SrRuO3|Yuki K. Wakabayashi,Shingo Kaneta-Takada,Yoshiharu Krockenberger,Kosuke Takiguchi,Shinobu Ohya,Masaaki Tanaka,Yoshitaka Taniyasu,Hideki Yamamoto###
(1690682, 1690686)
Structural characterizations revealed that the crystallinity, in terms of theSr and O sublattices, of SrRu0.7O3 thin films, is as high as that of theultrahigh-quality SrRuO3 ones.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6382978723404255,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2127659574468085,0,0,0,0,0,0.14893617021276595,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 140, 'K', 1],[84.0, 150, 'K', 1],[100.0, 30, '%', 2],[127.0, 5, 'nm', 2]

SrRuO3
###Structural and transport properties of highly Ru-deficient SrRu0.7O3 thin films prepared by molecular beam epitaxy: comparison with stoichiometric SrRuO3|Yuki K. Wakabayashi,Shingo Kaneta-Takada,Yoshiharu Krockenberger,Kosuke Takiguchi,Shinobu Ohya,Masaaki Tanaka,Yoshitaka Taniyasu,Hideki Yamamoto###
(1690712, 1690715)
Structural characterizations revealed that the crystallinity, in terms of theSr and O sublattices, of SrRu0.7O3 thin films, is as high as that of theultrahigh-quality SrRuO3 ones.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 140, 'K', 1],[55.0, 150, 'K', 1],[71.0, 30, '%', 2],[98.0, 5, 'nm', 2]

C
###Structural and transport properties of highly Ru-deficient SrRu0.7O3 thin films prepared by molecular beam epitaxy: comparison with stoichiometric SrRuO3|Yuki K. Wakabayashi,Shingo Kaneta-Takada,Yoshiharu Krockenberger,Kosuke Takiguchi,Shinobu Ohya,Masaaki Tanaka,Yoshitaka Taniyasu,Hideki Yamamoto###
(1690728, 1690728)
 The Curie temperature (T<missing VAR>C) analysis elucidatedthat SrRu0.7O3 (T<missing VAR>C  140 K) is a material distinct from SrRuO3 (T<missing VAR>C  150 K).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 140, 'K', 0],[42.0, 150, 'K', 0],[58.0, 30, '%', 1],[85.0, 5, 'nm', 1]

SrRu0.7O3
###Structural and transport properties of highly Ru-deficient SrRu0.7O3 thin films prepared by molecular beam epitaxy: comparison with stoichiometric SrRuO3|Yuki K. Wakabayashi,Shingo Kaneta-Takada,Yoshiharu Krockenberger,Kosuke Takiguchi,Shinobu Ohya,Masaaki Tanaka,Yoshitaka Taniyasu,Hideki Yamamoto###
(1690738, 1690742)
 The Curie temperature (T<missing VAR>C) analysis elucidatedthat SrRu0.7O3 (T<missing VAR>C  140 K) is a material distinct from SrRuO3 (T<missing VAR>C  150 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6382978723404255,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2127659574468085,0,0,0,0,0,0.14893617021276595,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 140, 'K', 0],[28.0, 150, 'K', 0],[44.0, 30, '%', 1],[71.0, 5, 'nm', 1]

C
###Structural and transport properties of highly Ru-deficient SrRu0.7O3 thin films prepared by molecular beam epitaxy: comparison with stoichiometric SrRuO3|Yuki K. Wakabayashi,Shingo Kaneta-Takada,Yoshiharu Krockenberger,Kosuke Takiguchi,Shinobu Ohya,Masaaki Tanaka,Yoshitaka Taniyasu,Hideki Yamamoto###
(1690746, 1690746)
 The Curie temperature (T<missing VAR>C) analysis elucidatedthat SrRu0.7O3 (T<missing VAR>C  140 K) is a material distinct from SrRuO3 (T<missing VAR>C  150 K).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 140, 'K', 0],[24.0, 150, 'K', 0],[40.0, 30, '%', 1],[67.0, 5, 'nm', 1]

SrRuO3
###Structural and transport properties of highly Ru-deficient SrRu0.7O3 thin films prepared by molecular beam epitaxy: comparison with stoichiometric SrRuO3|Yuki K. Wakabayashi,Shingo Kaneta-Takada,Yoshiharu Krockenberger,Kosuke Takiguchi,Shinobu Ohya,Masaaki Tanaka,Yoshitaka Taniyasu,Hideki Yamamoto###
(1690761, 1690764)
 The Curie temperature (T<missing VAR>C) analysis elucidatedthat SrRu0.7O3 (T<missing VAR>C  140 K) is a material distinct from SrRuO3 (T<missing VAR>C  150 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 140, 'K', 0],[6.0, 150, 'K', 0],[22.0, 30, '%', 1],[49.0, 5, 'nm', 1]

C
###Structural and transport properties of highly Ru-deficient SrRu0.7O3 thin films prepared by molecular beam epitaxy: comparison with stoichiometric SrRuO3|Yuki K. Wakabayashi,Shingo Kaneta-Takada,Yoshiharu Krockenberger,Kosuke Takiguchi,Shinobu Ohya,Masaaki Tanaka,Yoshitaka Taniyasu,Hideki Yamamoto###
(1690768, 1690768)
 The Curie temperature (T<missing VAR>C) analysis elucidatedthat SrRu0.7O3 (T<missing VAR>C  140 K) is a material distinct from SrRuO3 (T<missing VAR>C  150 K).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 140, 'K', 0],[2.0, 150, 'K', 0],[18.0, 30, '%', 1],[45.0, 5, 'nm', 1]

Ru
###Structural and transport properties of highly Ru-deficient SrRu0.7O3 thin films prepared by molecular beam epitaxy: comparison with stoichiometric SrRuO3|Yuki K. Wakabayashi,Shingo Kaneta-Takada,Yoshiharu Krockenberger,Kosuke Takiguchi,Shinobu Ohya,Masaaki Tanaka,Yoshitaka Taniyasu,Hideki Yamamoto###
(1690781, 1690781)
Despite the large Ru deficiency (30%), the SrRu0.7O3 films showed metallicconduction when t<missing VAR> > 5 nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 140, 'K', 1],[11.0, 150, 'K', 1],[5.0, 30, '%', 0],[32.0, 5, 'nm', 0]

SrRu0.7O3
###Structural and transport properties of highly Ru-deficient SrRu0.7O3 thin films prepared by molecular beam epitaxy: comparison with stoichiometric SrRuO3|Yuki K. Wakabayashi,Shingo Kaneta-Takada,Yoshiharu Krockenberger,Kosuke Takiguchi,Shinobu Ohya,Masaaki Tanaka,Yoshitaka Taniyasu,Hideki Yamamoto###
(1690793, 1690797)
Despite the large Ru deficiency (30%), the SrRu0.7O3 films showed metallicconduction when t<missing VAR> > 5 nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6382978723404255,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2127659574468085,0,0,0,0,0,0.14893617021276595,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 140, 'K', 1],[23.0, 150, 'K', 1],[7.0, 30, '%', 0],[16.0, 5, 'nm', 0]

In
###Structural and transport properties of highly Ru-deficient SrRu0.7O3 thin films prepared by molecular beam epitaxy: comparison with stoichiometric SrRuO3|Yuki K. Wakabayashi,Shingo Kaneta-Takada,Yoshiharu Krockenberger,Kosuke Takiguchi,Shinobu Ohya,Masaaki Tanaka,Yoshitaka Taniyasu,Hideki Yamamoto###
(1690816, 1690816)
 In high-field magnetoresistance measurements, thefascinating phenomenon of Weyl fermion transport was not observed for theSrRu0.7O3 thin films irrespective of thickness, which is in contrast to thestoichiometric SrRuO3 films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 140, 'K', 2],[46.0, 150, 'K', 2],[30.0, 30, '%', 1],[3.0, 5, 'nm', 1]

SrRu0.7O3
###Structural and transport properties of highly Ru-deficient SrRu0.7O3 thin films prepared by molecular beam epitaxy: comparison with stoichiometric SrRuO3|Yuki K. Wakabayashi,Shingo Kaneta-Takada,Yoshiharu Krockenberger,Kosuke Takiguchi,Shinobu Ohya,Masaaki Tanaka,Yoshitaka Taniyasu,Hideki Yamamoto###
(1690853, 1690857)
 In high-field magnetoresistance measurements, thefascinating phenomenon of Weyl fermion transport was not observed for theSrRu0.7O3 thin films irrespective of thickness, which is in contrast to thestoichiometric SrRuO3 films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6382978723404255,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2127659574468085,0,0,0,0,0,0.14893617021276595,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 140, 'K', 2],[83.0, 150, 'K', 2],[67.0, 30, '%', 1],[40.0, 5, 'nm', 1]

SrRuO3
###Structural and transport properties of highly Ru-deficient SrRu0.7O3 thin films prepared by molecular beam epitaxy: comparison with stoichiometric SrRuO3|Yuki K. Wakabayashi,Shingo Kaneta-Takada,Yoshiharu Krockenberger,Kosuke Takiguchi,Shinobu Ohya,Masaaki Tanaka,Yoshitaka Taniyasu,Hideki Yamamoto###
(1690885, 1690888)
 In high-field magnetoresistance measurements, thefascinating phenomenon of Weyl fermion transport was not observed for theSrRu0.7O3 thin films irrespective of thickness, which is in contrast to thestoichiometric SrRuO3 films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 140, 'K', 2],[115.0, 150, 'K', 2],[99.0, 30, '%', 1],[72.0, 5, 'nm', 1]

Ru
###Structural and transport properties of highly Ru-deficient SrRu0.7O3 thin films prepared by molecular beam epitaxy: comparison with stoichiometric SrRuO3|Yuki K. Wakabayashi,Shingo Kaneta-Takada,Yoshiharu Krockenberger,Kosuke Takiguchi,Shinobu Ohya,Masaaki Tanaka,Yoshitaka Taniyasu,Hideki Yamamoto###
(1690923, 1690923)
 The (magneto)transport properties suggest that apicture of carrier scattering due to the Ru vacancies is appropriate forSrRu0.7O3, and also that proper stoichiometry control is a prerequisite toutilizing the full potential of SrRuO3 as a magnetic Weyl semimetal andtwo-dimensional spin-polarized system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 140, 'K', 3],[153.0, 150, 'K', 3],[137.0, 30, '%', 2],[110.0, 5, 'nm', 2]

SrRu0.7O3
###Structural and transport properties of highly Ru-deficient SrRu0.7O3 thin films prepared by molecular beam epitaxy: comparison with stoichiometric SrRuO3|Yuki K. Wakabayashi,Shingo Kaneta-Takada,Yoshiharu Krockenberger,Kosuke Takiguchi,Shinobu Ohya,Masaaki Tanaka,Yoshitaka Taniyasu,Hideki Yamamoto###
(1690934, 1690938)
 The (magneto)transport properties suggest that apicture of carrier scattering due to the Ru vacancies is appropriate forSrRu0.7O3, and also that proper stoichiometry control is a prerequisite toutilizing the full potential of SrRuO3 as a magnetic Weyl semimetal andtwo-dimensional spin-polarized system.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6382978723404255,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2127659574468085,0,0,0,0,0,0.14893617021276595,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, 140, 'K', 3],[164.0, 150, 'K', 3],[148.0, 30, '%', 2],[121.0, 5, 'nm', 2]

SrRuO3
###Structural and transport properties of highly Ru-deficient SrRu0.7O3 thin films prepared by molecular beam epitaxy: comparison with stoichiometric SrRuO3|Yuki K. Wakabayashi,Shingo Kaneta-Takada,Yoshiharu Krockenberger,Kosuke Takiguchi,Shinobu Ohya,Masaaki Tanaka,Yoshitaka Taniyasu,Hideki Yamamoto###
(1690972, 1690975)
 The (magneto)transport properties suggest that apicture of carrier scattering due to the Ru vacancies is appropriate forSrRu0.7O3, and also that proper stoichiometry control is a prerequisite toutilizing the full potential of SrRuO3 as a magnetic Weyl semimetal andtwo-dimensional spin-polarized system.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[224.0, 140, 'K', 3],[202.0, 150, 'K', 3],[186.0, 30, '%', 2],[159.0, 5, 'nm', 2]

Ru
###Structural and transport properties of highly Ru-deficient SrRu0.7O3 thin films prepared by molecular beam epitaxy: comparison with stoichiometric SrRuO3|Yuki K. Wakabayashi,Shingo Kaneta-Takada,Yoshiharu Krockenberger,Kosuke Takiguchi,Shinobu Ohya,Masaaki Tanaka,Yoshitaka Taniyasu,Hideki Yamamoto###
(1691012, 1691012)
 Nevertheless, the large tolerance in Rucomposition (30 %) to metallic conduction is advantageous for some practicalapplications where SrRu1-xO3 is exploited as an epitaxial conducting layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[264.0, 140, 'K', 4],[242.0, 150, 'K', 4],[226.0, 30, '%', 3],[199.0, 5, 'nm', 3]

SrRu1-xO3
###Structural and transport properties of highly Ru-deficient SrRu0.7O3 thin films prepared by molecular beam epitaxy: comparison with stoichiometric SrRuO3|Yuki K. Wakabayashi,Shingo Kaneta-Takada,Yoshiharu Krockenberger,Kosuke Takiguchi,Shinobu Ohya,Masaaki Tanaka,Yoshitaka Taniyasu,Hideki Yamamoto###
(1691044, 1691050)
 Nevertheless, the large tolerance in Rucomposition (30 %) to metallic conduction is advantageous for some practicalapplications where SrRu1-xO3 is exploited as an epitaxial conducting layer.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[296.0, 140, 'K', 4],[274.0, 150, 'K', 4],[258.0, 30, '%', 3],[231.0, 5, 'nm', 3]

La0.7Sr0.3MnO3
###Oxygen doping and polaron magnetic coupling in Alq$_3$ films|Andrea Droghetti###
(1691194, 1691200)
 This seems to be confirmed by recent experiments performed withLa0.7Sr0.3MnO3/Alq3/AlOx<missing VAR>/Co devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

AlO
###Oxygen doping and polaron magnetic coupling in Alq$_3$ films|Andrea Droghetti###
(1691205, 1691206)
 This seems to be confirmed by recent experiments performed withLa0.7Sr0.3MnO3/Alq3/AlOx<missing VAR>/Co devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Oxygen doping and polaron magnetic coupling in Alq$_3$ films|Andrea Droghetti###
(1691209, 1691209)
 This seems to be confirmed by recent experiments performed withLa0.7Sr0.3MnO3/Alq3/AlOx<missing VAR>/Co devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Oxygen doping and polaron magnetic coupling in Alq$_3$ films|Andrea Droghetti###
(1691256, 1691256)
 In this paper we investigate by means offirst-principles calculations the electronic and magnetic properties of O2molecules and ions in Alq3 films to establish whether oxygen plays anyimportant role for spin transport inLa0.7Sr0.3MnO3/Alq3/AlOx<missing VAR>/Co devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O2
###Oxygen doping and polaron magnetic coupling in Alq$_3$ films|Andrea Droghetti###
(1691291, 1691292)
 In this paper we investigate by means offirst-principles calculations the electronic and magnetic properties of O2molecules and ions in Alq3 films to establish whether oxygen plays anyimportant role for spin transport inLa0.7Sr0.3MnO3/Alq3/AlOx<missing VAR>/Co devices.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.7Sr0.3MnO3
###Oxygen doping and polaron magnetic coupling in Alq$_3$ films|Andrea Droghetti###
(1691334, 1691340)
 In this paper we investigate by means offirst-principles calculations the electronic and magnetic properties of O2molecules and ions in Alq3 films to establish whether oxygen plays anyimportant role for spin transport inLa0.7Sr0.3MnO3/Alq3/AlOx<missing VAR>/Co devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

AlO
###Oxygen doping and polaron magnetic coupling in Alq$_3$ films|Andrea Droghetti###
(1691345, 1691346)
 In this paper we investigate by means offirst-principles calculations the electronic and magnetic properties of O2molecules and ions in Alq3 films to establish whether oxygen plays anyimportant role for spin transport inLa0.7Sr0.3MnO3/Alq3/AlOx<missing VAR>/Co devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Oxygen doping and polaron magnetic coupling in Alq$_3$ films|Andrea Droghetti###
(1691349, 1691349)
 In this paper we investigate by means offirst-principles calculations the electronic and magnetic properties of O2molecules and ions in Alq3 films to establish whether oxygen plays anyimportant role for spin transport inLa0.7Sr0.3MnO3/Alq3/AlOx<missing VAR>/Co devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Oxygen doping and polaron magnetic coupling in Alq$_3$ films|Andrea Droghetti###
(1691370, 1691370)
 In fact, we show that O2 molecules do not form an impurity bandand there is no magnetic interaction between them.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O2
###Oxygen doping and polaron magnetic coupling in Alq$_3$ films|Andrea Droghetti###
(1691381, 1691382)
 In fact, we show that O2 molecules do not form an impurity bandand there is no magnetic interaction between them.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Oxygen doping and polaron magnetic coupling in Alq$_3$ films|Andrea Droghetti###
(1691416, 1691416)
 In contrast, we suggest thatspin-transport may be enabled by the direct exchange coupling between Alq3-ions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TiO2
###Room-temperature colossal magnetoresistance in terraced single-layer graphene|J. X. Hu,J. Gou,M. Yang,G. J. Omar,J. Y. Tan,S. W. Zeng,Y. P. Liu,K. Han,Z. S. Lim,Z. Huang,A. T. S. Wee,A. Ariando###
(1691735, 1691737)
 Bylaminating single-layer graphene on a terraced substrate, such as TiO2terminated SrTiO3, we demonstrate a universal one order of magnitudeenhancement in the MR compared to conventional single-layer graphene devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 5, ',', 1],[41.0, 0, '%', 1],[37.0, 9, 'T', 1],[66.0, 1, ',', 1],[68.0, 0, '%', 1],[200.0, 2, 'D', 3]

SrTiO3
###Room-temperature colossal magnetoresistance in terraced single-layer graphene|J. X. Hu,J. Gou,M. Yang,G. J. Omar,J. Y. Tan,S. W. Zeng,Y. P. Liu,K. Han,Z. S. Lim,Z. Huang,A. T. S. Wee,A. Ariando###
(1691742, 1691745)
 Bylaminating single-layer graphene on a terraced substrate, such as TiO2terminated SrTiO3, we demonstrate a universal one order of magnitudeenhancement in the MR compared to conventional single-layer graphene devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 5, ',', 1],[48.0, 0, '%', 1],[44.0, 9, 'T', 1],[58.0, 1, ',', 1],[60.0, 0, '%', 1],[192.0, 2, 'D', 3]

Fe2O3/Cr2O3/Fe2O3
###Magnon-mediated interlayer coupling in an all-antiferromagnetic junction|Yongjian Zhou,Liyang Liao,Xiaofeng Zhou,Hua Bai,Mingkun Zhao,Caihua Wan,Siqi Yin,Lin Huang,Tingwen Guo,Lei Han,Ruyi Chen,Zhiyuan Zhou,Xiufeng Han,Feng Pan,Cheng Song###
(1692134, 1692147)
 Here we demonstrate such a static interlayer coupling at roomtemperature in an antiferromagnetic junction Fe2O3/Cr2O3/Fe2O3, where the twoantiferromagnetic Fe2O3 layers are functional materials and theantiferromagnetic Cr2O3 layer serves as a spacer.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Fe2O3
###Magnon-mediated interlayer coupling in an all-antiferromagnetic junction|Yongjian Zhou,Liyang Liao,Xiaofeng Zhou,Hua Bai,Mingkun Zhao,Caihua Wan,Siqi Yin,Lin Huang,Tingwen Guo,Lei Han,Ruyi Chen,Zhiyuan Zhou,Xiufeng Han,Feng Pan,Cheng Song###
(1692159, 1692162)
 Here we demonstrate such a static interlayer coupling at roomtemperature in an antiferromagnetic junction Fe2O3/Cr2O3/Fe2O3, where the twoantiferromagnetic Fe2O3 layers are functional materials and theantiferromagnetic Cr2O3 layer serves as a spacer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr2O3
###Magnon-mediated interlayer coupling in an all-antiferromagnetic junction|Yongjian Zhou,Liyang Liao,Xiaofeng Zhou,Hua Bai,Mingkun Zhao,Caihua Wan,Siqi Yin,Lin Huang,Tingwen Guo,Lei Han,Ruyi Chen,Zhiyuan Zhou,Xiufeng Han,Feng Pan,Cheng Song###
(1692179, 1692182)
 Here we demonstrate such a static interlayer coupling at roomtemperature in an antiferromagnetic junction Fe2O3/Cr2O3/Fe2O3, where the twoantiferromagnetic Fe2O3 layers are functional materials and theantiferromagnetic Cr2O3 layer serves as a spacer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Magnon-mediated interlayer coupling in an all-antiferromagnetic junction|Yongjian Zhou,Liyang Liao,Xiaofeng Zhou,Hua Bai,Mingkun Zhao,Caihua Wan,Siqi Yin,Lin Huang,Tingwen Guo,Lei Han,Ruyi Chen,Zhiyuan Zhou,Xiufeng Han,Feng Pan,Cheng Song###
(1692197, 1692197)
 The Neel vectors in the topand bottom Fe2O3 are strongly orthogonally coupled, which is bridged by atypical bosonic excitation (magnon) in the Cr2O3 spacer.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe2O3
###Magnon-mediated interlayer coupling in an all-antiferromagnetic junction|Yongjian Zhou,Liyang Liao,Xiaofeng Zhou,Hua Bai,Mingkun Zhao,Caihua Wan,Siqi Yin,Lin Huang,Tingwen Guo,Lei Han,Ruyi Chen,Zhiyuan Zhou,Xiufeng Han,Feng Pan,Cheng Song###
(1692213, 1692216)
 The Neel vectors in the topand bottom Fe2O3 are strongly orthogonally coupled, which is bridged by atypical bosonic excitation (magnon) in the Cr2O3 spacer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr2O3
###Magnon-mediated interlayer coupling in an all-antiferromagnetic junction|Yongjian Zhou,Liyang Liao,Xiaofeng Zhou,Hua Bai,Mingkun Zhao,Caihua Wan,Siqi Yin,Lin Huang,Tingwen Guo,Lei Han,Ruyi Chen,Zhiyuan Zhou,Xiufeng Han,Feng Pan,Cheng Song###
(1692252, 1692255)
 The Neel vectors in the topand bottom Fe2O3 are strongly orthogonally coupled, which is bridged by atypical bosonic excitation (magnon) in the Cr2O3 spacer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###A Colossal Electroresistance response, accompanied by metal-insulator transition, in a mixed-valent vanadate|Rafikul Ali Saha,Abhisek Bandyopadhyay,Irene Schiesaro,Carlo Meneghini,Sugata Ray###
(1692446, 1692446)
 Colossal electroresistance (CER) in manganites, i.e.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###A Colossal Electroresistance response, accompanied by metal-insulator transition, in a mixed-valent vanadate|Rafikul Ali Saha,Abhisek Bandyopadhyay,Irene Schiesaro,Carlo Meneghini,Sugata Ray###
(1692527, 1692527)
, a large change inelectrical resistance under the influence of either an applied electric fieldor an applied electric current, has often been described as complimentary tothe colossal magnetoresistance (CMR) effect.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###A Colossal Electroresistance response, accompanied by metal-insulator transition, in a mixed-valent vanadate|Rafikul Ali Saha,Abhisek Bandyopadhyay,Irene Schiesaro,Carlo Meneghini,Sugata Ray###
(1692590, 1692590)
 Mixed valent vanadates with activet2g and empty eg orbitals, unlike manganites, have not naturally been discussedin this context, as double exchange based CMR is not realizable in them.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###A Colossal Electroresistance response, accompanied by metal-insulator transition, in a mixed-valent vanadate|Rafikul Ali Saha,Abhisek Bandyopadhyay,Irene Schiesaro,Carlo Meneghini,Sugata Ray###
(1692687, 1692687)
Here we probe a Fe-doped hollandite lead vanadate PbFe1.75V4.25O11 (PFVO),which exhibits a clear MIT as a function of temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PbFe1.75V4.25O11
###A Colossal Electroresistance response, accompanied by metal-insulator transition, in a mixed-valent vanadate|Rafikul Ali Saha,Abhisek Bandyopadhyay,Irene Schiesaro,Carlo Meneghini,Sugata Ray###
(1692697, 1692703)
Here we probe a Fe-doped hollandite lead vanadate PbFe1.75V4.25O11 (PFVO),which exhibits a clear MIT as a function of temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6111111111111112,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2361111111111111,0,0,0.09722222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.05555555555555555,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(PFVO)
###A Colossal Electroresistance response, accompanied by metal-insulator transition, in a mixed-valent vanadate|Rafikul Ali Saha,Abhisek Bandyopadhyay,Irene Schiesaro,Carlo Meneghini,Sugata Ray###
(1692705, 1692710)
Here we probe a Fe-doped hollandite lead vanadate PbFe1.75V4.25O11 (PFVO),which exhibits a clear MIT as a function of temperature.
Featurization successful!
0,0,0,0,0,0,0,0.25,0.25,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###A Colossal Electroresistance response, accompanied by metal-insulator transition, in a mixed-valent vanadate|Rafikul Ali Saha,Abhisek Bandyopadhyay,Irene Schiesaro,Carlo Meneghini,Sugata Ray###
(1692762, 1692762)
 Most importantly, agiant fall in the resistivity, indicative of a CER, as well as a systematicshift in the MIT towards higher temperature are observed as a function ofapplied electric current.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Recent progress and challenges in magnetic tunnel junctions with 2D materials for spintronic applications|Lishu Zhang,Jun Zhou,Hui Li,Lei Shen,Yuan Ping Feng###
(1692906, 1692906)
 As Moores<missing VAR> law is gradually losing its effectiveness, developing alternativehigh-speed and low-energy-consuming information technology with post-siliconadvanced materials is urgently needed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 2, 'D', 1],[175.0, 2, 'D', 2],[205.0, 2, 'D', 3],[249.0, 2, 'D', 4],[266.0, 2, 'D', 4],[287.0, 2, 'D', 5],[348.0, 2, 'D', 5],[422.0, 2, 'D', 6],[442.0, 2, 'D', 6],[487.0, 2, 'D', 6]

BN
###Recent progress and challenges in magnetic tunnel junctions with 2D materials for spintronic applications|Lishu Zhang,Jun Zhou,Hui Li,Lei Shen,Yuan Ping Feng###
(1693213, 1693214)
Various 2D materials, such as semi-metallic graphene, insulating h<missing VAR>-BN,semiconducting MoS2, magnetic semiconducting CrI3, magnetic metallic Fe3GeTe2and some other recently emerged 2D materials are discussed as the electrodesand/or central scattering materials of MTJs in this review.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[318.0, 2, 'D', 6],[132.0, 2, 'D', 3],[102.0, 2, 'D', 2],[58.0, 2, 'D', 1],[41.0, 2, 'D', 1],[20.0, 2, 'D', 0],[40.0, 2, 'D', 0],[114.0, 2, 'D', 1],[134.0, 2, 'D', 1],[179.0, 2, 'D', 1]

MoS2
###Recent progress and challenges in magnetic tunnel junctions with 2D materials for spintronic applications|Lishu Zhang,Jun Zhou,Hui Li,Lei Shen,Yuan Ping Feng###
(1693220, 1693222)
Various 2D materials, such as semi-metallic graphene, insulating h<missing VAR>-BN,semiconducting MoS2, magnetic semiconducting CrI3, magnetic metallic Fe3GeTe2and some other recently emerged 2D materials are discussed as the electrodesand/or central scattering materials of MTJs in this review.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[325.0, 2, 'D', 6],[139.0, 2, 'D', 3],[109.0, 2, 'D', 2],[65.0, 2, 'D', 1],[48.0, 2, 'D', 1],[27.0, 2, 'D', 0],[32.0, 2, 'D', 0],[106.0, 2, 'D', 1],[126.0, 2, 'D', 1],[171.0, 2, 'D', 1]

CrI3
###Recent progress and challenges in magnetic tunnel junctions with 2D materials for spintronic applications|Lishu Zhang,Jun Zhou,Hui Li,Lei Shen,Yuan Ping Feng###
(1693229, 1693231)
Various 2D materials, such as semi-metallic graphene, insulating h<missing VAR>-BN,semiconducting MoS2, magnetic semiconducting CrI3, magnetic metallic Fe3GeTe2and some other recently emerged 2D materials are discussed as the electrodesand/or central scattering materials of MTJs in this review.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[334.0, 2, 'D', 6],[148.0, 2, 'D', 3],[118.0, 2, 'D', 2],[74.0, 2, 'D', 1],[57.0, 2, 'D', 1],[36.0, 2, 'D', 0],[23.0, 2, 'D', 0],[97.0, 2, 'D', 1],[117.0, 2, 'D', 1],[162.0, 2, 'D', 1]

Fe3GeTe2
###Recent progress and challenges in magnetic tunnel junctions with 2D materials for spintronic applications|Lishu Zhang,Jun Zhou,Hui Li,Lei Shen,Yuan Ping Feng###
(1693238, 1693242)
Various 2D materials, such as semi-metallic graphene, insulating h<missing VAR>-BN,semiconducting MoS2, magnetic semiconducting CrI3, magnetic metallic Fe3GeTe2and some other recently emerged 2D materials are discussed as the electrodesand/or central scattering materials of MTJs in this review.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[343.0, 2, 'D', 6],[157.0, 2, 'D', 3],[127.0, 2, 'D', 2],[83.0, 2, 'D', 1],[66.0, 2, 'D', 1],[45.0, 2, 'D', 0],[12.0, 2, 'D', 0],[86.0, 2, 'D', 1],[106.0, 2, 'D', 1],[151.0, 2, 'D', 1]

Ho2Ir2O7
###Monopole density and antiferromagnetic domain control in spin-ice iridates|M. J. Pearce,K. Götze,A. Szabó,T. S. Sikkenk,M. R. Lees,A. T. Boothroyd,D. Prabhakaran,C. Castelnovo,P. A. Goddard###
(1693577, 1693582)
 Here, usingmeasurements on single crystals of Ho2Ir2O7 in combination withdipolar Monte Carlo simulations, we show that the magnetoresistance is highlysensitive to the density of monopoles.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6363636363636364,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N2
###Stability of multielectron bubbles in high Landau levels|Dohyung Ro,S. A. Myers,N. Deng,J. D. Watson,M. J. Manfra,L. N Pfeiffer,K. W. West,G. A. Csáthy###
(1693930, 1693931)
 We study multielectron bubble phases in the N2 and N3 Landau levels ina high mobility GaAs/AlGaAs sample.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N3
###Stability of multielectron bubbles in high Landau levels|Dohyung Ro,S. A. Myers,N. Deng,J. D. Watson,M. J. Manfra,L. N Pfeiffer,K. W. West,G. A. Csáthy###
(1693935, 1693936)
 We study multielectron bubble phases in the N2 and N3 Landau levels ina high mobility GaAs/AlGaAs sample.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs/AlGaAs
###Stability of multielectron bubbles in high Landau levels|Dohyung Ro,S. A. Myers,N. Deng,J. D. Watson,M. J. Manfra,L. N Pfeiffer,K. W. West,G. A. Csáthy###
(1693951, 1693956)
 We study multielectron bubble phases in the N2 and N3 Landau levels ina high mobility GaAs/AlGaAs sample.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

N3
###Stability of multielectron bubbles in high Landau levels|Dohyung Ro,S. A. Myers,N. Deng,J. D. Watson,M. J. Manfra,L. N Pfeiffer,K. W. West,G. A. Csáthy###
(1694079, 1694080)
 Within the N3 Landau level, onset temperatures ofthree-electron and two-electron bubbles exhibit linear trends with respect tothe filling factor; the onset temperatures of three-electron bubbles aresystematically higher than those of two-electron bubbles.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N2
###Stability of multielectron bubbles in high Landau levels|Dohyung Ro,S. A. Myers,N. Deng,J. D. Watson,M. J. Manfra,L. N Pfeiffer,K. W. West,G. A. Csáthy###
(1694182, 1694183)
 Furthermore, onsettemperatures of the two-electron bubble phases across N2 and N3 Landaulevels are similar, but exhibit an offset.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N3
###Stability of multielectron bubbles in high Landau levels|Dohyung Ro,S. A. Myers,N. Deng,J. D. Watson,M. J. Manfra,L. N Pfeiffer,K. W. West,G. A. Csáthy###
(1694187, 1694188)
 Furthermore, onsettemperatures of the two-electron bubble phases across N2 and N3 Landaulevels are similar, but exhibit an offset.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N3
###Stability of multielectron bubbles in high Landau levels|Dohyung Ro,S. A. Myers,N. Deng,J. D. Watson,M. J. Manfra,L. N Pfeiffer,K. W. West,G. A. Csáthy###
(1694236, 1694237)
 This offset and the dominant natureof the three-electron bubbles in the N3 Landau level reveals the role of theshort-range part of the electron-electron interaction in the formation of thebubbles.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###A low-cost flexible instrument made of off-the-shelf components for pulsed eddy current testing: overview and application to pseudo-noise excitation|Hamed Malekmohammadi,Andrea Migali,Stefano Laureti,Marco Ricci###
(1694413, 1694413)
 The proposed system is compact andeasy to operate, and it consists of a dual H-bridge stepper motor driver, acoil winded in-house on an additively manufactured support, a tunnelmagnetoresistance sensor, and a data generation/acquisition module.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PC
###A low-cost flexible instrument made of off-the-shelf components for pulsed eddy current testing: overview and application to pseudo-noise excitation|Hamed Malekmohammadi,Andrea Migali,Stefano Laureti,Marco Ricci###
(1694748, 1694749)
 This was achieved by assembling avery low-cost handy device, which can be further improved in portability andperformances with the use of different off-the-shelf components, and that canbe easily integrated with single-board PC, paving the way for futuredevelopments in this field.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SmB6
###Unusual high-field metal in a Kondo insulator|Ziji Xiang,Lu Chen,Kuan-Wen Chen,Colin Tinsman,Yuki Sato,Tomoya Asaba,Helen Lu,Yuichi Kasahara,Marcelo Jaime,Fedor Balakirev,Fumitoshi Iga,Yuji Matsuda,John Singleton,Lu Li###
(1694893, 1694895)
 A recent manifestation of this is the unexpectedobservation of magnetic quantum oscillations and metallic thermal transport,both properties of systems with Fermi surfaces of itinerant quasiparticles, inthe Kondo insulators SmB6 and YbB12.
Featurization terminated normally.
0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YbB12
###Unusual high-field metal in a Kondo insulator|Ziji Xiang,Lu Chen,Kuan-Wen Chen,Colin Tinsman,Yuki Sato,Tomoya Asaba,Helen Lu,Yuichi Kasahara,Marcelo Jaime,Fedor Balakirev,Fumitoshi Iga,Yuji Matsuda,John Singleton,Lu Li###
(1694899, 1694901)
 A recent manifestation of this is the unexpectedobservation of magnetic quantum oscillations and metallic thermal transport,both properties of systems with Fermi surfaces of itinerant quasiparticles, inthe Kondo insulators SmB6 and YbB12.
Featurization terminated normally.
0,0,0,0,0.9230769230769231,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Unusual high-field metal in a Kondo insulator|Ziji Xiang,Lu Chen,Kuan-Wen Chen,Colin Tinsman,Yuki Sato,Tomoya Asaba,Helen Lu,Yuichi Kasahara,Marcelo Jaime,Fedor Balakirev,Fumitoshi Iga,Yuji Matsuda,John Singleton,Lu Li###
(1695129, 1695129)
 In the metallic state this leads to a heavy-fermionbad metal with negligible magnetoresistance, relatively high resistivity and avery large Kadowaki-Woods ratio, underlining the exotic nature of the fermionensemble inhabiting 12.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrRuO3
###Dimensional Control of Octahedral Tilt in SrRuO3 via Infinite-layered Oxides|Shan Lin,Qinghua Zhang,Xiahan Sang,Jiali Zhao,Sheng Cheng,Amanda Huon,Qiao Jin,Shuang Chen,Shengru Chen,Haizhong Guo,Meng He,Chen Ge,Can Wang,Jia-Ou Wang,Michael R. Fitzsimmons,Lin Gu,Tao Zhu,Kui-juan Jin,Er-Jia Guo###
(1695225, 1695228)
Dimensional Control of Octahedral Tilt in SrRuO3 via Infinite-layered Oxides.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[313.0, 4, 'd', 7],[318.0, 2, 'p', 7]

SrRuO3
###Dimensional Control of Octahedral Tilt in SrRuO3 via Infinite-layered Oxides|Shan Lin,Qinghua Zhang,Xiahan Sang,Jiali Zhao,Sheng Cheng,Amanda Huon,Qiao Jin,Shuang Chen,Shengru Chen,Haizhong Guo,Meng He,Chen Ge,Can Wang,Jia-Ou Wang,Michael R. Fitzsimmons,Lin Gu,Tao Zhu,Kui-juan Jin,Er-Jia Guo###
(1695383, 1695386)
 Here we propose a new route to tune the ferromagnetic response inSrRuO3 (SR<missing VAR>O) ultrathin layers by oxygen coordination of adjacent SrCuO2 (SCO)layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 4, 'd', 3],[160.0, 2, 'p', 3]

S
###Dimensional Control of Octahedral Tilt in SrRuO3 via Infinite-layered Oxides|Shan Lin,Qinghua Zhang,Xiahan Sang,Jiali Zhao,Sheng Cheng,Amanda Huon,Qiao Jin,Shuang Chen,Shengru Chen,Haizhong Guo,Meng He,Chen Ge,Can Wang,Jia-Ou Wang,Michael R. Fitzsimmons,Lin Gu,Tao Zhu,Kui-juan Jin,Er-Jia Guo###
(1695389, 1695389)
 Here we propose a new route to tune the ferromagnetic response inSrRuO3 (SR<missing VAR>O) ultrathin layers by oxygen coordination of adjacent SrCuO2 (SCO)layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 4, 'd', 3],[157.0, 2, 'p', 3]

O
###Dimensional Control of Octahedral Tilt in SrRuO3 via Infinite-layered Oxides|Shan Lin,Qinghua Zhang,Xiahan Sang,Jiali Zhao,Sheng Cheng,Amanda Huon,Qiao Jin,Shuang Chen,Shengru Chen,Haizhong Guo,Meng He,Chen Ge,Can Wang,Jia-Ou Wang,Michael R. Fitzsimmons,Lin Gu,Tao Zhu,Kui-juan Jin,Er-Jia Guo###
(1695391, 1695391)
 Here we propose a new route to tune the ferromagnetic response inSrRuO3 (SR<missing VAR>O) ultrathin layers by oxygen coordination of adjacent SrCuO2 (SCO)layers.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 4, 'd', 3],[155.0, 2, 'p', 3]

SrCuO2
###Dimensional Control of Octahedral Tilt in SrRuO3 via Infinite-layered Oxides|Shan Lin,Qinghua Zhang,Xiahan Sang,Jiali Zhao,Sheng Cheng,Amanda Huon,Qiao Jin,Shuang Chen,Shengru Chen,Haizhong Guo,Meng He,Chen Ge,Can Wang,Jia-Ou Wang,Michael R. Fitzsimmons,Lin Gu,Tao Zhu,Kui-juan Jin,Er-Jia Guo###
(1695408, 1695411)
 Here we propose a new route to tune the ferromagnetic response inSrRuO3 (SR<missing VAR>O) ultrathin layers by oxygen coordination of adjacent SrCuO2 (SCO)layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 4, 'd', 3],[135.0, 2, 'p', 3]

(SCO)
###Dimensional Control of Octahedral Tilt in SrRuO3 via Infinite-layered Oxides|Shan Lin,Qinghua Zhang,Xiahan Sang,Jiali Zhao,Sheng Cheng,Amanda Huon,Qiao Jin,Shuang Chen,Shengru Chen,Haizhong Guo,Meng He,Chen Ge,Can Wang,Jia-Ou Wang,Michael R. Fitzsimmons,Lin Gu,Tao Zhu,Kui-juan Jin,Er-Jia Guo###
(1695413, 1695417)
 Here we propose a new route to tune the ferromagnetic response inSrRuO3 (SR<missing VAR>O) ultrathin layers by oxygen coordination of adjacent SrCuO2 (SCO)layers.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 4, 'd', 3],[129.0, 2, 'p', 3]

CuO2
###Dimensional Control of Octahedral Tilt in SrRuO3 via Infinite-layered Oxides|Shan Lin,Qinghua Zhang,Xiahan Sang,Jiali Zhao,Sheng Cheng,Amanda Huon,Qiao Jin,Shuang Chen,Shengru Chen,Haizhong Guo,Meng He,Chen Ge,Can Wang,Jia-Ou Wang,Michael R. Fitzsimmons,Lin Gu,Tao Zhu,Kui-juan Jin,Er-Jia Guo###
(1695429, 1695431)
 The infinite-layered CuO2 in SCO exhibits a structural transformationfrom planar-type to chain-type as reducing film thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 4, 'd', 2],[115.0, 2, 'p', 2]

SCO
###Dimensional Control of Octahedral Tilt in SrRuO3 via Infinite-layered Oxides|Shan Lin,Qinghua Zhang,Xiahan Sang,Jiali Zhao,Sheng Cheng,Amanda Huon,Qiao Jin,Shuang Chen,Shengru Chen,Haizhong Guo,Meng He,Chen Ge,Can Wang,Jia-Ou Wang,Michael R. Fitzsimmons,Lin Gu,Tao Zhu,Kui-juan Jin,Er-Jia Guo###
(1695435, 1695437)
 The infinite-layered CuO2 in SCO exhibits a structural transformationfrom planar-type to chain-type as reducing film thickness.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 4, 'd', 2],[109.0, 2, 'p', 2]

S
###Dimensional Control of Octahedral Tilt in SrRuO3 via Infinite-layered Oxides|Shan Lin,Qinghua Zhang,Xiahan Sang,Jiali Zhao,Sheng Cheng,Amanda Huon,Qiao Jin,Shuang Chen,Shengru Chen,Haizhong Guo,Meng He,Chen Ge,Can Wang,Jia-Ou Wang,Michael R. Fitzsimmons,Lin Gu,Tao Zhu,Kui-juan Jin,Er-Jia Guo###
(1695506, 1695506)
 These twoorientations dramatically modify the polyhedral connectivity at the interface,thus altering the octahedral distortion of SR<missing VAR>O.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 4, 'd', 1],[40.0, 2, 'p', 1]

O
###Dimensional Control of Octahedral Tilt in SrRuO3 via Infinite-layered Oxides|Shan Lin,Qinghua Zhang,Xiahan Sang,Jiali Zhao,Sheng Cheng,Amanda Huon,Qiao Jin,Shuang Chen,Shengru Chen,Haizhong Guo,Meng He,Chen Ge,Can Wang,Jia-Ou Wang,Michael R. Fitzsimmons,Lin Gu,Tao Zhu,Kui-juan Jin,Er-Jia Guo###
(1695508, 1695508)
 These twoorientations dramatically modify the polyhedral connectivity at the interface,thus altering the octahedral distortion of SR<missing VAR>O.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 4, 'd', 1],[38.0, 2, 'p', 1]

Ru
###Dimensional Control of Octahedral Tilt in SrRuO3 via Infinite-layered Oxides|Shan Lin,Qinghua Zhang,Xiahan Sang,Jiali Zhao,Sheng Cheng,Amanda Huon,Qiao Jin,Shuang Chen,Shengru Chen,Haizhong Guo,Meng He,Chen Ge,Can Wang,Jia-Ou Wang,Michael R. Fitzsimmons,Lin Gu,Tao Zhu,Kui-juan Jin,Er-Jia Guo###
(1695530, 1695530)
 The local structural variationchanges the spin state of Ru and hybridization strength between Ru 4d and O 2porbitals, leading to a significant change in the magnetoresistance andanomalous Hall resistivity of SR<missing VAR>O layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 4, 'd', 0],[16.0, 2, 'p', 0]

Ru
###Dimensional Control of Octahedral Tilt in SrRuO3 via Infinite-layered Oxides|Shan Lin,Qinghua Zhang,Xiahan Sang,Jiali Zhao,Sheng Cheng,Amanda Huon,Qiao Jin,Shuang Chen,Shengru Chen,Haizhong Guo,Meng He,Chen Ge,Can Wang,Jia-Ou Wang,Michael R. Fitzsimmons,Lin Gu,Tao Zhu,Kui-juan Jin,Er-Jia Guo###
(1695540, 1695540)
 The local structural variationchanges the spin state of Ru and hybridization strength between Ru 4d and O 2porbitals, leading to a significant change in the magnetoresistance andanomalous Hall resistivity of SR<missing VAR>O layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[1.0, 4, 'd', 0],[6.0, 2, 'p', 0]

O
###Dimensional Control of Octahedral Tilt in SrRuO3 via Infinite-layered Oxides|Shan Lin,Qinghua Zhang,Xiahan Sang,Jiali Zhao,Sheng Cheng,Amanda Huon,Qiao Jin,Shuang Chen,Shengru Chen,Haizhong Guo,Meng He,Chen Ge,Can Wang,Jia-Ou Wang,Michael R. Fitzsimmons,Lin Gu,Tao Zhu,Kui-juan Jin,Er-Jia Guo###
(1695545, 1695545)
 The local structural variationchanges the spin state of Ru and hybridization strength between Ru 4d and O 2porbitals, leading to a significant change in the magnetoresistance andanomalous Hall resistivity of SR<missing VAR>O layers.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 4, 'd', 0],[1.0, 2, 'p', 0]

S
###Dimensional Control of Octahedral Tilt in SrRuO3 via Infinite-layered Oxides|Shan Lin,Qinghua Zhang,Xiahan Sang,Jiali Zhao,Sheng Cheng,Amanda Huon,Qiao Jin,Shuang Chen,Shengru Chen,Haizhong Guo,Meng He,Chen Ge,Can Wang,Jia-Ou Wang,Michael R. Fitzsimmons,Lin Gu,Tao Zhu,Kui-juan Jin,Er-Jia Guo###
(1695579, 1695579)
 The local structural variationchanges the spin state of Ru and hybridization strength between Ru 4d and O 2porbitals, leading to a significant change in the magnetoresistance andanomalous Hall resistivity of SR<missing VAR>O layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 4, 'd', 0],[33.0, 2, 'p', 0]

O
###Dimensional Control of Octahedral Tilt in SrRuO3 via Infinite-layered Oxides|Shan Lin,Qinghua Zhang,Xiahan Sang,Jiali Zhao,Sheng Cheng,Amanda Huon,Qiao Jin,Shuang Chen,Shengru Chen,Haizhong Guo,Meng He,Chen Ge,Can Wang,Jia-Ou Wang,Michael R. Fitzsimmons,Lin Gu,Tao Zhu,Kui-juan Jin,Er-Jia Guo###
(1695581, 1695581)
 The local structural variationchanges the spin state of Ru and hybridization strength between Ru 4d and O 2porbitals, leading to a significant change in the magnetoresistance andanomalous Hall resistivity of SR<missing VAR>O layers.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 4, 'd', 0],[35.0, 2, 'p', 0]

U
###Understanding the role of exchange and correlations in complex oxides under strain and oxide heterostructures|Hrishit Banerjee###
(1695822, 1695822)
 Powerful experimental techniques like molecularbeam epitaxy and pulsed laser deposition have made fabrication of oxideheterostructures with atomically sharp interfaces possible, while more and moresophisticated handling of exchange and correlations within first principlesmethods including density functional theory (DFT) supplemented with Hubbard Ucorrections and hybrid functionals, and beyond DFT techniques like dynamicalmean field theory (DMFT) have made understanding of such correlated oxides andoxide interfaces easier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Understanding the role of exchange and correlations in complex oxides under strain and oxide heterostructures|Hrishit Banerjee###
(1695858, 1695858)
 Powerful experimental techniques like molecularbeam epitaxy and pulsed laser deposition have made fabrication of oxideheterostructures with atomically sharp interfaces possible, while more and moresophisticated handling of exchange and correlations within first principlesmethods including density functional theory (DFT) supplemented with Hubbard Ucorrections and hybrid functionals, and beyond DFT techniques like dynamicalmean field theory (DMFT) have made understanding of such correlated oxides andoxide interfaces easier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Understanding the role of exchange and correlations in complex oxides under strain and oxide heterostructures|Hrishit Banerjee###
(1696133, 1696133)
 In this review we briefly look at theoretical studies ofnovel phenomena in oxides under strain and oxide heterostructures, and try tounderstand the role of exchange and particularly correlation in giving rise tosuch exotic electronic states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YbNi3Al9
###Thin Film Growth of Heavy Fermion Chiral Magnet YbNi3Al9|Hiroaki Shishido,Akira Okumura,Tatsuya Saimyoji,Shota Nakamura,Shigeo Ohara,Yoshihiko Togawa###
(1696238, 1696242)
Thin Film Growth of Heavy Fermion Chiral Magnet YbNi3Al9.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.6923076923076923,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23076923076923078,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[208.0, 40, ',', 4],[242.0, 3.6, ',', 4]

YbNi3Al9
###Thin Film Growth of Heavy Fermion Chiral Magnet YbNi3Al9|Hiroaki Shishido,Akira Okumura,Tatsuya Saimyoji,Shota Nakamura,Shigeo Ohara,Yoshihiko Togawa###
(1696265, 1696269)
 We grew thin films of a heavy fermion chiral magnet YbNi3Al9 by usingmolecular beam epitaxy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.6923076923076923,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23076923076923078,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 40, ',', 3],[215.0, 3.6, ',', 3]

Yb
###Thin Film Growth of Heavy Fermion Chiral Magnet YbNi3Al9|Hiroaki Shishido,Akira Okumura,Tatsuya Saimyoji,Shota Nakamura,Shigeo Ohara,Yoshihiko Togawa###
(1696329, 1696329)
 They were grown on c<missing VAR>-plane sapphire substrates underultra-high vacuum while maintaining a deposition rate at a stoichiometric ratioamong Yb, Ni, and Al.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 40, ',', 2],[155.0, 3.6, ',', 2]

Ni
###Thin Film Growth of Heavy Fermion Chiral Magnet YbNi3Al9|Hiroaki Shishido,Akira Okumura,Tatsuya Saimyoji,Shota Nakamura,Shigeo Ohara,Yoshihiko Togawa###
(1696332, 1696332)
 They were grown on c<missing VAR>-plane sapphire substrates underultra-high vacuum while maintaining a deposition rate at a stoichiometric ratioamong Yb, Ni, and Al.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 40, ',', 2],[152.0, 3.6, ',', 2]

Al
###Thin Film Growth of Heavy Fermion Chiral Magnet YbNi3Al9|Hiroaki Shishido,Akira Okumura,Tatsuya Saimyoji,Shota Nakamura,Shigeo Ohara,Yoshihiko Togawa###
(1696337, 1696337)
 They were grown on c<missing VAR>-plane sapphire substrates underultra-high vacuum while maintaining a deposition rate at a stoichiometric ratioamong Yb, Ni, and Al.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 40, ',', 2],[147.0, 3.6, ',', 2]

YbNi3Al9
###Thin Film Growth of Heavy Fermion Chiral Magnet YbNi3Al9|Hiroaki Shishido,Akira Okumura,Tatsuya Saimyoji,Shota Nakamura,Shigeo Ohara,Yoshihiko Togawa###
(1696375, 1696379)
 The resulting thin films contain epitaxial grains with ac<missing VAR> axis parallel to the substrate surface The YbNi3Al9 c<missing VAR> axis isparallel to the sapphire b<missing VAR> or a axis.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.6923076923076923,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23076923076923078,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 40, ',', 1],[105.0, 3.6, ',', 1]

K
###Thin Film Growth of Heavy Fermion Chiral Magnet YbNi3Al9|Hiroaki Shishido,Akira Okumura,Tatsuya Saimyoji,Shota Nakamura,Shigeo Ohara,Yoshihiko Togawa###
(1696452, 1696452)
 The temperature dependence of theresistivity exhibits a typical feature of a dense Kondo system with a broadshoulder structure at sim40,K, as well as a kink as a signature of thechiral helimagnetic ordering at 3.6,K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 40, ',', 0],[32.0, 3.6, ',', 0]

K
###Thin Film Growth of Heavy Fermion Chiral Magnet YbNi3Al9|Hiroaki Shishido,Akira Okumura,Tatsuya Saimyoji,Shota Nakamura,Shigeo Ohara,Yoshihiko Togawa###
(1696486, 1696486)
 The temperature dependence of theresistivity exhibits a typical feature of a dense Kondo system with a broadshoulder structure at sim40,K, as well as a kink as a signature of thechiral helimagnetic ordering at 3.6,K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 40, ',', 0],[2.0, 3.6, ',', 0]

FeSe
###Enhancement of Superconductivity Linked with Linear-in-Temperature/Field Resistivity in Ion-Gated FeSe Films|Xingyu Jiang,Mingyang Qin,Xinjian Wei,Zhongpei Feng,Jiezun Ke,Haipeng Zhu,Fucong Chen,Liping Zhang,Li Xu,Xu Zhang,Ruozhou Zhang,Zhongxu Wei,Peiyu Xiong,Qimei Liang,Chuanying Xi,Zhaosheng Wang,Jie Yuan,Beiyi Zhu,Kun Jiang,Ming Yang,Junfeng Wang,Jiangping Hu,Tao Xiang,Brigitte Leridon,Rong Yu,Qihong Chen,Kui Jin,Zhongxian Zhao###
(1696670, 1696671)
Enhancement of Superconductivity Linked with Linear-in-Temperature/Field Resistivity in Ion-Gated FeSe Films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 8, 'K', 2],[89.0, 50, 'K', 2],[208.0, 10, 'K', 5]

(FeSe)
###Enhancement of Superconductivity Linked with Linear-in-Temperature/Field Resistivity in Ion-Gated FeSe Films|Xingyu Jiang,Mingyang Qin,Xinjian Wei,Zhongpei Feng,Jiezun Ke,Haipeng Zhu,Fucong Chen,Liping Zhang,Li Xu,Xu Zhang,Ruozhou Zhang,Zhongxu Wei,Peiyu Xiong,Qimei Liang,Chuanying Xi,Zhaosheng Wang,Jie Yuan,Beiyi Zhu,Kun Jiang,Ming Yang,Junfeng Wang,Jiangping Hu,Tao Xiang,Brigitte Leridon,Rong Yu,Qihong Chen,Kui Jin,Zhongxian Zhao###
(1696680, 1696683)
 Iron selenide (FeSe) - the structurally simplest iron-based superconductor,has attracted tremendous interest in the past years.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 8, 'K', 1],[77.0, 50, 'K', 1],[196.0, 10, 'K', 4]

(Tc)
###Enhancement of Superconductivity Linked with Linear-in-Temperature/Field Resistivity in Ion-Gated FeSe Films|Xingyu Jiang,Mingyang Qin,Xinjian Wei,Zhongpei Feng,Jiezun Ke,Haipeng Zhu,Fucong Chen,Liping Zhang,Li Xu,Xu Zhang,Ruozhou Zhang,Zhongxu Wei,Peiyu Xiong,Qimei Liang,Chuanying Xi,Zhaosheng Wang,Jie Yuan,Beiyi Zhu,Kun Jiang,Ming Yang,Junfeng Wang,Jiangping Hu,Tao Xiang,Brigitte Leridon,Rong Yu,Qihong Chen,Kui Jin,Zhongxian Zhao###
(1696727, 1696729)
 While the transitiontemperature (Tc) of bulk FeSe is sim 8 K, it can be significantly enhancedto 40 - 50 K by various ways of electron doping.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 8, 'K', 0],[31.0, 50, 'K', 0],[150.0, 10, 'K', 3]

FeSe
###Enhancement of Superconductivity Linked with Linear-in-Temperature/Field Resistivity in Ion-Gated FeSe Films|Xingyu Jiang,Mingyang Qin,Xinjian Wei,Zhongpei Feng,Jiezun Ke,Haipeng Zhu,Fucong Chen,Liping Zhang,Li Xu,Xu Zhang,Ruozhou Zhang,Zhongxu Wei,Peiyu Xiong,Qimei Liang,Chuanying Xi,Zhaosheng Wang,Jie Yuan,Beiyi Zhu,Kun Jiang,Ming Yang,Junfeng Wang,Jiangping Hu,Tao Xiang,Brigitte Leridon,Rong Yu,Qihong Chen,Kui Jin,Zhongxian Zhao###
(1696735, 1696736)
 While the transitiontemperature (Tc) of bulk FeSe is sim 8 K, it can be significantly enhancedto 40 - 50 K by various ways of electron doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 8, 'K', 0],[24.0, 50, 'K', 0],[143.0, 10, 'K', 3]

Tc
###Enhancement of Superconductivity Linked with Linear-in-Temperature/Field Resistivity in Ion-Gated FeSe Films|Xingyu Jiang,Mingyang Qin,Xinjian Wei,Zhongpei Feng,Jiezun Ke,Haipeng Zhu,Fucong Chen,Liping Zhang,Li Xu,Xu Zhang,Ruozhou Zhang,Zhongxu Wei,Peiyu Xiong,Qimei Liang,Chuanying Xi,Zhaosheng Wang,Jie Yuan,Beiyi Zhu,Kun Jiang,Ming Yang,Junfeng Wang,Jiangping Hu,Tao Xiang,Brigitte Leridon,Rong Yu,Qihong Chen,Kui Jin,Zhongxian Zhao###
(1696795, 1696795)
 However, the underlyingphysics for such great enhancement of Tc and so the Cooper pairing mechanismstill remain puzzles.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 8, 'K', 1],[35.0, 50, 'K', 1],[84.0, 10, 'K', 2]

FeSe
###Enhancement of Superconductivity Linked with Linear-in-Temperature/Field Resistivity in Ion-Gated FeSe Films|Xingyu Jiang,Mingyang Qin,Xinjian Wei,Zhongpei Feng,Jiezun Ke,Haipeng Zhu,Fucong Chen,Liping Zhang,Li Xu,Xu Zhang,Ruozhou Zhang,Zhongxu Wei,Peiyu Xiong,Qimei Liang,Chuanying Xi,Zhaosheng Wang,Jie Yuan,Beiyi Zhu,Kun Jiang,Ming Yang,Junfeng Wang,Jiangping Hu,Tao Xiang,Brigitte Leridon,Rong Yu,Qihong Chen,Kui Jin,Zhongxian Zhao###
(1696848, 1696849)
 Here, we report a systematic study of thesuperconducting- and normal-state properties of FeSe films via ionic liquidgating.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 8, 'K', 2],[88.0, 50, 'K', 2],[30.0, 10, 'K', 1]

Tc
###Enhancement of Superconductivity Linked with Linear-in-Temperature/Field Resistivity in Ion-Gated FeSe Films|Xingyu Jiang,Mingyang Qin,Xinjian Wei,Zhongpei Feng,Jiezun Ke,Haipeng Zhu,Fucong Chen,Liping Zhang,Li Xu,Xu Zhang,Ruozhou Zhang,Zhongxu Wei,Peiyu Xiong,Qimei Liang,Chuanying Xi,Zhaosheng Wang,Jie Yuan,Beiyi Zhu,Kun Jiang,Ming Yang,Junfeng Wang,Jiangping Hu,Tao Xiang,Brigitte Leridon,Rong Yu,Qihong Chen,Kui Jin,Zhongxian Zhao###
(1696870, 1696870)
 With fine tuning, Tc evolves continuously from below 10 K to above 40K; in situ two-coil mutual inductance measurements unambiguously confirm thegating is a uniform bulk effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 8, 'K', 3],[110.0, 50, 'K', 3],[9.0, 10, 'K', 0]

K
###Enhancement of Superconductivity Linked with Linear-in-Temperature/Field Resistivity in Ion-Gated FeSe Films|Xingyu Jiang,Mingyang Qin,Xinjian Wei,Zhongpei Feng,Jiezun Ke,Haipeng Zhu,Fucong Chen,Liping Zhang,Li Xu,Xu Zhang,Ruozhou Zhang,Zhongxu Wei,Peiyu Xiong,Qimei Liang,Chuanying Xi,Zhaosheng Wang,Jie Yuan,Beiyi Zhu,Kun Jiang,Ming Yang,Junfeng Wang,Jiangping Hu,Tao Xiang,Brigitte Leridon,Rong Yu,Qihong Chen,Kui Jin,Zhongxian Zhao###
(1696888, 1696888)
 With fine tuning, Tc evolves continuously from below 10 K to above 40K; in situ two-coil mutual inductance measurements unambiguously confirm thegating is a uniform bulk effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 8, 'K', 3],[128.0, 50, 'K', 3],[9.0, 10, 'K', 0]

Tc
###Enhancement of Superconductivity Linked with Linear-in-Temperature/Field Resistivity in Ion-Gated FeSe Films|Xingyu Jiang,Mingyang Qin,Xinjian Wei,Zhongpei Feng,Jiezun Ke,Haipeng Zhu,Fucong Chen,Liping Zhang,Li Xu,Xu Zhang,Ruozhou Zhang,Zhongxu Wei,Peiyu Xiong,Qimei Liang,Chuanying Xi,Zhaosheng Wang,Jie Yuan,Beiyi Zhu,Kun Jiang,Ming Yang,Junfeng Wang,Jiangping Hu,Tao Xiang,Brigitte Leridon,Rong Yu,Qihong Chen,Kui Jin,Zhongxian Zhao###
(1696929, 1696929)
 Close to Tc, the normal-state resistivityshows a linear dependence on temperature and the linearity extends to lowertemperatures with the superconductivity suppressed by high magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 8, 'K', 4],[169.0, 50, 'K', 4],[50.0, 10, 'K', 1]

At
###Enhancement of Superconductivity Linked with Linear-in-Temperature/Field Resistivity in Ion-Gated FeSe Films|Xingyu Jiang,Mingyang Qin,Xinjian Wei,Zhongpei Feng,Jiezun Ke,Haipeng Zhu,Fucong Chen,Liping Zhang,Li Xu,Xu Zhang,Ruozhou Zhang,Zhongxu Wei,Peiyu Xiong,Qimei Liang,Chuanying Xi,Zhaosheng Wang,Jie Yuan,Beiyi Zhu,Kun Jiang,Ming Yang,Junfeng Wang,Jiangping Hu,Tao Xiang,Brigitte Leridon,Rong Yu,Qihong Chen,Kui Jin,Zhongxian Zhao###
(1696985, 1696985)
 Athigh fields, the normal-state magnetoresistance exhibits a linear-in-fielddependence and obeys a simple scaling relation between applied field andtemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[244.0, 8, 'K', 5],[225.0, 50, 'K', 5],[106.0, 10, 'K', 2]

Tc
###Enhancement of Superconductivity Linked with Linear-in-Temperature/Field Resistivity in Ion-Gated FeSe Films|Xingyu Jiang,Mingyang Qin,Xinjian Wei,Zhongpei Feng,Jiezun Ke,Haipeng Zhu,Fucong Chen,Liping Zhang,Li Xu,Xu Zhang,Ruozhou Zhang,Zhongxu Wei,Peiyu Xiong,Qimei Liang,Chuanying Xi,Zhaosheng Wang,Jie Yuan,Beiyi Zhu,Kun Jiang,Ming Yang,Junfeng Wang,Jiangping Hu,Tao Xiang,Brigitte Leridon,Rong Yu,Qihong Chen,Kui Jin,Zhongxian Zhao###
(1697050, 1697050)
 Consistent behaviors are observed for different-Tc statesthroughout the gating process, suggesting the pairing mechanism very likelyremains the same from low- to high-Tc state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[309.0, 8, 'K', 6],[290.0, 50, 'K', 6],[171.0, 10, 'K', 3]

Tc
###Enhancement of Superconductivity Linked with Linear-in-Temperature/Field Resistivity in Ion-Gated FeSe Films|Xingyu Jiang,Mingyang Qin,Xinjian Wei,Zhongpei Feng,Jiezun Ke,Haipeng Zhu,Fucong Chen,Liping Zhang,Li Xu,Xu Zhang,Ruozhou Zhang,Zhongxu Wei,Peiyu Xiong,Qimei Liang,Chuanying Xi,Zhaosheng Wang,Jie Yuan,Beiyi Zhu,Kun Jiang,Ming Yang,Junfeng Wang,Jiangping Hu,Tao Xiang,Brigitte Leridon,Rong Yu,Qihong Chen,Kui Jin,Zhongxian Zhao###
(1697092, 1697092)
 Consistent behaviors are observed for different-Tc statesthroughout the gating process, suggesting the pairing mechanism very likelyremains the same from low- to high-Tc state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[351.0, 8, 'K', 6],[332.0, 50, 'K', 6],[213.0, 10, 'K', 3]

Tc
###Enhancement of Superconductivity Linked with Linear-in-Temperature/Field Resistivity in Ion-Gated FeSe Films|Xingyu Jiang,Mingyang Qin,Xinjian Wei,Zhongpei Feng,Jiezun Ke,Haipeng Zhu,Fucong Chen,Liping Zhang,Li Xu,Xu Zhang,Ruozhou Zhang,Zhongxu Wei,Peiyu Xiong,Qimei Liang,Chuanying Xi,Zhaosheng Wang,Jie Yuan,Beiyi Zhu,Kun Jiang,Ming Yang,Junfeng Wang,Jiangping Hu,Tao Xiang,Brigitte Leridon,Rong Yu,Qihong Chen,Kui Jin,Zhongxian Zhao###
(1697125, 1697125)
 Importantly, the coefficient ofthe linear-in-temperature resistivity is positively correlated with Tc,similarly to the observations in cuprates, Bechgaard salts and iron pnictidesuperconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[384.0, 8, 'K', 7],[365.0, 50, 'K', 7],[246.0, 10, 'K', 4]

FeSe
###Enhancement of Superconductivity Linked with Linear-in-Temperature/Field Resistivity in Ion-Gated FeSe Films|Xingyu Jiang,Mingyang Qin,Xinjian Wei,Zhongpei Feng,Jiezun Ke,Haipeng Zhu,Fucong Chen,Liping Zhang,Li Xu,Xu Zhang,Ruozhou Zhang,Zhongxu Wei,Peiyu Xiong,Qimei Liang,Chuanying Xi,Zhaosheng Wang,Jie Yuan,Beiyi Zhu,Kun Jiang,Ming Yang,Junfeng Wang,Jiangping Hu,Tao Xiang,Brigitte Leridon,Rong Yu,Qihong Chen,Kui Jin,Zhongxian Zhao###
(1697185, 1697186)
 Our study points to a short-range antiferromagnetic exchangeinteraction mediated pairing mechanism in FeSe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[444.0, 8, 'K', 8],[425.0, 50, 'K', 8],[306.0, 10, 'K', 5]

F
###Spin-neutral currents for spintronics|Ding-Fu Shao,Shu-Hui Zhang,Ming Li,Chang-Beom Eom,Evgeny Y. Tsymbal###
(1697787, 1697787)
 Dueto their momentum-dependent spin polarization, such antiferromagnets can beused as active elements in antiferromagnetic tunnel junctions (AFMTJs) andproduce a giant tunneling magnetoresistance (TMR) effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 500, '%', 1]

RuO2
###Spin-neutral currents for spintronics|Ding-Fu Shao,Shu-Hui Zhang,Ming Li,Chang-Beom Eom,Evgeny Y. Tsymbal###
(1697817, 1697819)
 Using RuO2 as arepresentative compensated antiferromagnet exhibiting spin-independentconductance along the [001] direction but a non-spin-degenerate Fermi surface,we design a RuO2/TiO2/RuO2 (001) AFMTJ, where a globallyspin-neutral charge current is controlled by the relative orientation of theNeel vectors of the two RuO2 electrodes, resulting in the TMR effect aslarge as 500%.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 500, '%', 0]

RuO2/TiO2/RuO2
###Spin-neutral currents for spintronics|Ding-Fu Shao,Shu-Hui Zhang,Ming Li,Chang-Beom Eom,Evgeny Y. Tsymbal###
(1697873, 1697883)
 Using RuO2 as arepresentative compensated antiferromagnet exhibiting spin-independentconductance along the [001] direction but a non-spin-degenerate Fermi surface,we design a RuO2/TiO2/RuO2 (001) AFMTJ, where a globallyspin-neutral charge current is controlled by the relative orientation of theNeel vectors of the two RuO2 electrodes, resulting in the TMR effect aslarge as 500%.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[82.0, 500, '%', 0]

F
###Spin-neutral currents for spintronics|Ding-Fu Shao,Shu-Hui Zhang,Ming Li,Chang-Beom Eom,Evgeny Y. Tsymbal###
(1697890, 1697890)
 Using RuO2 as arepresentative compensated antiferromagnet exhibiting spin-independentconductance along the [001] direction but a non-spin-degenerate Fermi surface,we design a RuO2/TiO2/RuO2 (001) AFMTJ, where a globallyspin-neutral charge current is controlled by the relative orientation of theNeel vectors of the two RuO2 electrodes, resulting in the TMR effect aslarge as 500%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 500, '%', 0]

N
###Spin-neutral currents for spintronics|Ding-Fu Shao,Shu-Hui Zhang,Ming Li,Chang-Beom Eom,Evgeny Y. Tsymbal###
(1697928, 1697928)
 Using RuO2 as arepresentative compensated antiferromagnet exhibiting spin-independentconductance along the [001] direction but a non-spin-degenerate Fermi surface,we design a RuO2/TiO2/RuO2 (001) AFMTJ, where a globallyspin-neutral charge current is controlled by the relative orientation of theNeel vectors of the two RuO2 electrodes, resulting in the TMR effect aslarge as 500%.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 500, '%', 0]

RuO2
###Spin-neutral currents for spintronics|Ding-Fu Shao,Shu-Hui Zhang,Ming Li,Chang-Beom Eom,Evgeny Y. Tsymbal###
(1697939, 1697941)
 Using RuO2 as arepresentative compensated antiferromagnet exhibiting spin-independentconductance along the [001] direction but a non-spin-degenerate Fermi surface,we design a RuO2/TiO2/RuO2 (001) AFMTJ, where a globallyspin-neutral charge current is controlled by the relative orientation of theNeel vectors of the two RuO2 electrodes, resulting in the TMR effect aslarge as 500%.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 500, '%', 0]

F
###Spin-neutral currents for spintronics|Ding-Fu Shao,Shu-Hui Zhang,Ming Li,Chang-Beom Eom,Evgeny Y. Tsymbal###
(1698003, 1698003)
 These results are expanded to normal metals which can be usedas a counter electrode in AFMTJs with a single antiferromagnetic layer or otherelements in spintronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 500, '%', 1]

Bi4I4
###Quantum transport properties of beta-Bi4I4 near and well beyond the extreme quantum limit|Peipei Wang,Fangdong Tang,Peng Wang,Haipeng Zhu,Chang-Woo Cho,Junfeng Wang,Xu Du,Yonghong Shao,Liyuan Zhang###
(1698091, 1698094)
Quantum transport properties of beta-Bi4I4 near and well beyond the extreme quantum limit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 0.1, 'me', 3],[444.0, 3, 'D', 8]

Bi4I4
###Quantum transport properties of beta-Bi4I4 near and well beyond the extreme quantum limit|Peipei Wang,Fangdong Tang,Peng Wang,Haipeng Zhu,Chang-Woo Cho,Junfeng Wang,Xu Du,Yonghong Shao,Liyuan Zhang###
(1698131, 1698134)
 We have investigated the magneto-transport properties of beta-Bi4I4 bulkcrystal, which was recently theoretically proposed and experimentallydemonstrated to be a topological insulator.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 0.1, 'me', 2],[404.0, 3, 'D', 7]

At
###Quantum transport properties of beta-Bi4I4 near and well beyond the extreme quantum limit|Peipei Wang,Fangdong Tang,Peng Wang,Haipeng Zhu,Chang-Woo Cho,Junfeng Wang,Xu Du,Yonghong Shao,Liyuan Zhang###
(1698170, 1698170)
 At low temperature T<missing VAR> and magneticfield B, a series of Shubnikov-De Haas(SdH) oscillations are observed on themagnetoresistivity (MR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 0.1, 'me', 1],[368.0, 3, 'D', 6]

B
###Quantum transport properties of beta-Bi4I4 near and well beyond the extreme quantum limit|Peipei Wang,Fangdong Tang,Peng Wang,Haipeng Zhu,Chang-Woo Cho,Junfeng Wang,Xu Du,Yonghong Shao,Liyuan Zhang###
(1698185, 1698185)
 At low temperature T<missing VAR> and magneticfield B, a series of Shubnikov-De Haas(SdH) oscillations are observed on themagnetoresistivity (MR).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 0.1, 'me', 1],[353.0, 3, 'D', 6]

H
###Quantum transport properties of beta-Bi4I4 near and well beyond the extreme quantum limit|Peipei Wang,Fangdong Tang,Peng Wang,Haipeng Zhu,Chang-Woo Cho,Junfeng Wang,Xu Du,Yonghong Shao,Liyuan Zhang###
(1698201, 1698201)
 At low temperature T<missing VAR> and magneticfield B, a series of Shubnikov-De Haas(SdH) oscillations are observed on themagnetoresistivity (MR).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 0.1, 'me', 1],[337.0, 3, 'D', 6]

H
###Quantum transport properties of beta-Bi4I4 near and well beyond the extreme quantum limit|Peipei Wang,Fangdong Tang,Peng Wang,Haipeng Zhu,Chang-Woo Cho,Junfeng Wang,Xu Du,Yonghong Shao,Liyuan Zhang###
(1698266, 1698266)
 The detailed analysis reveals a light cyclotron massof 0.1 me, and the field angle dependence of MR reveals that the SdHoscillations originate from a convex Fermi surface.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 0.1, 'me', 0],[272.0, 3, 'D', 5]

In
###Quantum transport properties of beta-Bi4I4 near and well beyond the extreme quantum limit|Peipei Wang,Fangdong Tang,Peng Wang,Haipeng Zhu,Chang-Woo Cho,Junfeng Wang,Xu Du,Yonghong Shao,Liyuan Zhang###
(1698284, 1698284)
 In the extreme quantumlimit (EQL) region, there is a metal-insulator transition occurring soon afterthe EQL.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 0.1, 'me', 1],[254.0, 3, 'D', 4]

B
###Quantum transport properties of beta-Bi4I4 near and well beyond the extreme quantum limit|Peipei Wang,Fangdong Tang,Peng Wang,Haipeng Zhu,Chang-Woo Cho,Junfeng Wang,Xu Du,Yonghong Shao,Liyuan Zhang###
(1698455, 1698455)
 However, in the far end of EQL,both the longitudinal and Hall resistivity increase exponentially with B, andthe temperature dependence of the MR reveals an energy gap induced by the highmagnetic field, signifying a magnetic freeze-out effect.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[214.0, 0.1, 'me', 4],[83.0, 3, 'D', 1]

Bi4I4
###Quantum transport properties of beta-Bi4I4 near and well beyond the extreme quantum limit|Peipei Wang,Fangdong Tang,Peng Wang,Haipeng Zhu,Chang-Woo Cho,Junfeng Wang,Xu Du,Yonghong Shao,Liyuan Zhang###
(1698522, 1698525)
 Our findings indicatethat bulk beta-Bi4I4 is an excellent candidate for a 3D topological system forexploring EQL physics and relevant exotic quantum phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[281.0, 0.1, 'me', 5],[13.0, 3, 'D', 0]

(F)
###Evidence for competition between the superconductor proximity effect and quasiparticle spin-decay in superconducting spin-valves|B. Stoddart-Stones,X. Montiel,M. G. Blamire,J. W. A. Robinson###
(1698641, 1698643)
 The difference in the density of states for up- and down-spin electrons in aferromagnet (F) results in spin-dependent scattering of electrons at aferromagnet / nonmagnetic (F/N) interface.
Featurization successful!
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[353.0, 66, ',', 9]

N
###Evidence for competition between the superconductor proximity effect and quasiparticle spin-decay in superconducting spin-valves|B. Stoddart-Stones,X. Montiel,M. G. Blamire,J. W. A. Robinson###
(1698673, 1698673)
 The difference in the density of states for up- and down-spin electrons in aferromagnet (F) results in spin-dependent scattering of electrons at aferromagnet / nonmagnetic (F/N) interface.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[323.0, 66, ',', 9]

In
###Evidence for competition between the superconductor proximity effect and quasiparticle spin-decay in superconducting spin-valves|B. Stoddart-Stones,X. Montiel,M. G. Blamire,J. W. A. Robinson###
(1698679, 1698679)
 In a F/N/F spin-valve, this causes acurrent-independent difference in resistance (Delta R) between antiparallel(AP) and parallel (P) magnetization states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[317.0, 66, ',', 8]

F/N/F
###Evidence for competition between the superconductor proximity effect and quasiparticle spin-decay in superconducting spin-valves|B. Stoddart-Stones,X. Montiel,M. G. Blamire,J. W. A. Robinson###
(1698683, 1698687)
 In a F/N/F spin-valve, this causes acurrent-independent difference in resistance (Delta R) between antiparallel(AP) and parallel (P) magnetization states.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[309.0, 66, ',', 8]

P
###Evidence for competition between the superconductor proximity effect and quasiparticle spin-decay in superconducting spin-valves|B. Stoddart-Stones,X. Montiel,M. G. Blamire,J. W. A. Robinson###
(1698724, 1698724)
 In a F/N/F spin-valve, this causes acurrent-independent difference in resistance (Delta R) between antiparallel(AP) and parallel (P) magnetization states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[272.0, 66, ',', 8]

(P)
###Evidence for competition between the superconductor proximity effect and quasiparticle spin-decay in superconducting spin-valves|B. Stoddart-Stones,X. Montiel,M. G. Blamire,J. W. A. Robinson###
(1698731, 1698733)
 In a F/N/F spin-valve, this causes acurrent-independent difference in resistance (Delta R) between antiparallel(AP) and parallel (P) magnetization states.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[263.0, 66, ',', 8]

P
###Evidence for competition between the superconductor proximity effect and quasiparticle spin-decay in superconducting spin-valves|B. Stoddart-Stones,X. Montiel,M. G. Blamire,J. W. A. Robinson###
(1698760, 1698760)
 Giant magnetoresistance (GMR),Delta R<missing VAR>  R<missing VAR>(AP) - R<missing VAR>(P), is positive due to increased scattering of majorityand minority spin-electrons in the AP-state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[236.0, 66, ',', 7]

(P)
###Evidence for competition between the superconductor proximity effect and quasiparticle spin-decay in superconducting spin-valves|B. Stoddart-Stones,X. Montiel,M. G. Blamire,J. W. A. Robinson###
(1698766, 1698768)
 Giant magnetoresistance (GMR),Delta R<missing VAR>  R<missing VAR>(AP) - R<missing VAR>(P), is positive due to increased scattering of majorityand minority spin-electrons in the AP-state.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[228.0, 66, ',', 7]

P
###Evidence for competition between the superconductor proximity effect and quasiparticle spin-decay in superconducting spin-valves|B. Stoddart-Stones,X. Montiel,M. G. Blamire,J. W. A. Robinson###
(1698801, 1698801)
 Giant magnetoresistance (GMR),Delta R<missing VAR>  R<missing VAR>(AP) - R<missing VAR>(P), is positive due to increased scattering of majorityand minority spin-electrons in the AP-state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[195.0, 66, ',', 7]

N
###Evidence for competition between the superconductor proximity effect and quasiparticle spin-decay in superconducting spin-valves|B. Stoddart-Stones,X. Montiel,M. G. Blamire,J. W. A. Robinson###
(1698808, 1698808)
 If N is substituted for asuperconductor (S), there exists a competition between GMR and thesuperconducting spin-valve effect in the AP-state the net magnetic exchangefield acting on S is lowered and the superconductivity is reinforced meaningR<missing VAR>(AP) decreases.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 66, ',', 6]

(S)
###Evidence for competition between the superconductor proximity effect and quasiparticle spin-decay in superconducting spin-valves|B. Stoddart-Stones,X. Montiel,M. G. Blamire,J. W. A. Robinson###
(1698821, 1698823)
 If N is substituted for asuperconductor (S), there exists a competition between GMR and thesuperconducting spin-valve effect in the AP-state the net magnetic exchangefield acting on S is lowered and the superconductivity is reinforced meaningR<missing VAR>(AP) decreases.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 66, ',', 6]

P
###Evidence for competition between the superconductor proximity effect and quasiparticle spin-decay in superconducting spin-valves|B. Stoddart-Stones,X. Montiel,M. G. Blamire,J. W. A. Robinson###
(1698858, 1698858)
 If N is substituted for asuperconductor (S), there exists a competition between GMR and thesuperconducting spin-valve effect in the AP-state the net magnetic exchangefield acting on S is lowered and the superconductivity is reinforced meaningR<missing VAR>(AP) decreases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 66, ',', 6]

S
###Evidence for competition between the superconductor proximity effect and quasiparticle spin-decay in superconducting spin-valves|B. Stoddart-Stones,X. Montiel,M. G. Blamire,J. W. A. Robinson###
(1698877, 1698877)
 If N is substituted for asuperconductor (S), there exists a competition between GMR and thesuperconducting spin-valve effect in the AP-state the net magnetic exchangefield acting on S is lowered and the superconductivity is reinforced meaningR<missing VAR>(AP) decreases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 66, ',', 6]

P
###Evidence for competition between the superconductor proximity effect and quasiparticle spin-decay in superconducting spin-valves|B. Stoddart-Stones,X. Montiel,M. G. Blamire,J. W. A. Robinson###
(1698899, 1698899)
 If N is substituted for asuperconductor (S), there exists a competition between GMR and thesuperconducting spin-valve effect in the AP-state the net magnetic exchangefield acting on S is lowered and the superconductivity is reinforced meaningR<missing VAR>(AP) decreases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 66, ',', 6]

(CPP)
###Evidence for competition between the superconductor proximity effect and quasiparticle spin-decay in superconducting spin-valves|B. Stoddart-Stones,X. Montiel,M. G. Blamire,J. W. A. Robinson###
(1698915, 1698919)
 For current-perpendicular-to-plane (CPP) spin-valves,existing experimental studies show that GMR dominates (Delta R<missing VAR>>0) over thesuperconducting spin valve effect (Delta R<missing VAR><0) [J<missing VAR>.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 66, ',', 5]

Y
###Evidence for competition between the superconductor proximity effect and quasiparticle spin-decay in superconducting spin-valves|B. Stoddart-Stones,X. Montiel,M. G. Blamire,J. W. A. Robinson###
(1698976, 1698976)
 Y.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 66, ',', 4]

B
###Evidence for competition between the superconductor proximity effect and quasiparticle spin-decay in superconducting spin-valves|B. Stoddart-Stones,X. Montiel,M. G. Blamire,J. W. A. Robinson###
(1698993, 1698993)
 B66, 140507(R) (2002)].
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 66, ',', 0]

CPP
###Evidence for competition between the superconductor proximity effect and quasiparticle spin-decay in superconducting spin-valves|B. Stoddart-Stones,X. Montiel,M. G. Blamire,J. W. A. Robinson###
(1699065, 1699067)
 Here, however, we report a crossover from GMR (Delta R<missing VAR>> 0) to the superconducting spin valve effect (Delta R<missing VAR> < 0) in CPP F/S/Fspin-valves as the superconductor thickness decreases below a critical value.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 66, ',', 1]

F/S/F
###Evidence for competition between the superconductor proximity effect and quasiparticle spin-decay in superconducting spin-valves|B. Stoddart-Stones,X. Montiel,M. G. Blamire,J. W. A. Robinson###
(1699069, 1699073)
 Here, however, we report a crossover from GMR (Delta R<missing VAR>> 0) to the superconducting spin valve effect (Delta R<missing VAR> < 0) in CPP F/S/Fspin-valves as the superconductor thickness decreases below a critical value.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[73.0, 66, ',', 1]

EuP3
###Magnetic generation and switching of topological quantum phases in a trivial semimetal $α{\mathrm{-EuP}}_3$|Alex Hiro Mayo,Hidefumi Takahashi,Mohammad Saeed Bahramy,Atsuro Nomoto,Hideaki Sakai,Shintaro Ishiwata###
(1699133, 1699135)
Magnetic generation and switching of topological quantum phases in a trivial semimetal mathrm-EuP3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Magnetic generation and switching of topological quantum phases in a trivial semimetal $α{\mathrm{-EuP}}_3$|Alex Hiro Mayo,Hidefumi Takahashi,Mohammad Saeed Bahramy,Atsuro Nomoto,Hideaki Sakai,Shintaro Ishiwata###
(1699185, 1699185)
 Topological materials have drawn increasing attention owing to their richquantum properties, as highlighted by a large intrinsic anomalous Hall effect(AHE) in Weyl and nodal-line semimetals.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuP3
###Magnetic generation and switching of topological quantum phases in a trivial semimetal $α{\mathrm{-EuP}}_3$|Alex Hiro Mayo,Hidefumi Takahashi,Mohammad Saeed Bahramy,Atsuro Nomoto,Hideaki Sakai,Shintaro Ishiwata###
(1699276, 1699278)
 Here we demonstrate amagnetic-field-induced switching of band topology in alphamathrm-EuP3,a magnetic semimetal with a layered crystal structure derived from blackphosphorus.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Magnetic generation and switching of topological quantum phases in a trivial semimetal $α{\mathrm{-EuP}}_3$|Alex Hiro Mayo,Hidefumi Takahashi,Mohammad Saeed Bahramy,Atsuro Nomoto,Hideaki Sakai,Shintaro Ishiwata###
(1699347, 1699347)
 When the magnetic field is applied perpendicular to the singlemirror plane of the monoclinic structure, a giant AHE<missing VAR> signal abruptly emergesat a certain threshold magnetization value, giving rise to a prominently largeanomalous Hall angle of leftThetamathrmAHE<missing VAR>right sim 20circ.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Magnetic generation and switching of topological quantum phases in a trivial semimetal $α{\mathrm{-EuP}}_3$|Alex Hiro Mayo,Hidefumi Takahashi,Mohammad Saeed Bahramy,Atsuro Nomoto,Hideaki Sakai,Shintaro Ishiwata###
(1699395, 1699395)
 When the magnetic field is applied perpendicular to the singlemirror plane of the monoclinic structure, a giant AHE<missing VAR> signal abruptly emergesat a certain threshold magnetization value, giving rise to a prominently largeanomalous Hall angle of leftThetamathrmAHE<missing VAR>right sim 20circ.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Eu
###Magnetic generation and switching of topological quantum phases in a trivial semimetal $α{\mathrm{-EuP}}_3$|Alex Hiro Mayo,Hidefumi Takahashi,Mohammad Saeed Bahramy,Atsuro Nomoto,Hideaki Sakai,Shintaro Ishiwata###
(1699604, 1699604)
 These topological phases are stabilized via theexchange coupling between localized Eu-4f<missing VAR> moments and mobile carriersconducting through the phosphorus layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Positive magnetoresistance and chiral anomaly in exfoliated type-II Weyl semimetal $T_\mathrm{d}$-WTe$_{2}$|R. Adhikari,S. Adhikari,B. Faina,M. Terschanski,S. Bork,C. Leimhofer,M. Cinchetti,A. Bonanni###
(1699695, 1699696)
Positive magnetoresistance and chiral anomaly in exfoliated type-II Weyl semimetal Tmathrmd-WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[286.0, 1200, ',', 5],[303.0, 5000, ',', 5],[318.0, 5, ',', 5],[340.0, 7, ',', 5],[369.0, 50, ',', 6]

WTe2
###Positive magnetoresistance and chiral anomaly in exfoliated type-II Weyl semimetal $T_\mathrm{d}$-WTe$_{2}$|R. Adhikari,S. Adhikari,B. Faina,M. Terschanski,S. Bork,C. Leimhofer,M. Cinchetti,A. Bonanni###
(1699706, 1699708)
Positive magnetoresistance and chiral anomaly in exfoliated type-II Weyl semimetal Tmathrmd-WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[274.0, 1200, ',', 5],[291.0, 5000, ',', 5],[306.0, 5, ',', 5],[328.0, 7, ',', 5],[357.0, 50, ',', 6]

WTe2
###Positive magnetoresistance and chiral anomaly in exfoliated type-II Weyl semimetal $T_\mathrm{d}$-WTe$_{2}$|R. Adhikari,S. Adhikari,B. Faina,M. Terschanski,S. Bork,C. Leimhofer,M. Cinchetti,A. Bonanni###
(1699725, 1699727)
 Layered van der Waals semimetallic Tmathrmd-WTe2, exhibitingintriguing properties which include non-saturating extreme positivemagnetoresistance (MR) and tunable chiral anomaly, has emerged as modeltopological type-II Weyl semimetal system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[255.0, 1200, ',', 4],[272.0, 5000, ',', 4],[287.0, 5, ',', 4],[309.0, 7, ',', 4],[338.0, 50, ',', 5]

II
###Positive magnetoresistance and chiral anomaly in exfoliated type-II Weyl semimetal $T_\mathrm{d}$-WTe$_{2}$|R. Adhikari,S. Adhikari,B. Faina,M. Terschanski,S. Bork,C. Leimhofer,M. Cinchetti,A. Bonanni###
(1699779, 1699780)
 Layered van der Waals semimetallic Tmathrmd-WTe2, exhibitingintriguing properties which include non-saturating extreme positivemagnetoresistance (MR) and tunable chiral anomaly, has emerged as modeltopological type-II Weyl semimetal system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[202.0, 1200, ',', 4],[219.0, 5000, ',', 4],[234.0, 5, ',', 4],[256.0, 7, ',', 4],[285.0, 50, ',', 5]

WTe2
###Positive magnetoresistance and chiral anomaly in exfoliated type-II Weyl semimetal $T_\mathrm{d}$-WTe$_{2}$|R. Adhikari,S. Adhikari,B. Faina,M. Terschanski,S. Bork,C. Leimhofer,M. Cinchetti,A. Bonanni###
(1699812, 1699814)
 Here, sim45 nm thick mechanicallyexfoliated flakes of Tmathrmd-WTe2 are studied via atomic forcemicroscopy, Raman spectroscopy, low-T<missing VAR>/high-mu0H magnetotransportmeasurements and optical reflectivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[168.0, 1200, ',', 3],[185.0, 5000, ',', 3],[200.0, 5, ',', 3],[222.0, 7, ',', 3],[251.0, 50, ',', 4]

H
###Positive magnetoresistance and chiral anomaly in exfoliated type-II Weyl semimetal $T_\mathrm{d}$-WTe$_{2}$|R. Adhikari,S. Adhikari,B. Faina,M. Terschanski,S. Bork,C. Leimhofer,M. Cinchetti,A. Bonanni###
(1699843, 1699843)
 Here, sim45 nm thick mechanicallyexfoliated flakes of Tmathrmd-WTe2 are studied via atomic forcemicroscopy, Raman spectroscopy, low-T<missing VAR>/high-mu0H magnetotransportmeasurements and optical reflectivity.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 1200, ',', 3],[156.0, 5000, ',', 3],[171.0, 5, ',', 3],[193.0, 7, ',', 3],[222.0, 50, ',', 4]

II
###Positive magnetoresistance and chiral anomaly in exfoliated type-II Weyl semimetal $T_\mathrm{d}$-WTe$_{2}$|R. Adhikari,S. Adhikari,B. Faina,M. Terschanski,S. Bork,C. Leimhofer,M. Cinchetti,A. Bonanni###
(1699916, 1699917)
 The contribution of anisotropy of theFermi liquid state to the origin of the large positive transversemathrmMRperp and the signature of chiral anomaly of the type-II Weylfermions are reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 1200, ',', 2],[82.0, 5000, ',', 2],[97.0, 5, ',', 2],[119.0, 7, ',', 2],[148.0, 50, ',', 3]

V
###Positive magnetoresistance and chiral anomaly in exfoliated type-II Weyl semimetal $T_\mathrm{d}$-WTe$_{2}$|R. Adhikari,S. Adhikari,B. Faina,M. Terschanski,S. Bork,C. Leimhofer,M. Cinchetti,A. Bonanni###
(1700004, 1700004)
 Atransverse mathrmMRperp sim1200,% and an average carrier mobilityof 5000, cm2V-1s<missing VAR>-1 at T<missing VAR>5,mathrmK for an appliedperpendicular field mu0Hperp  7,mathrmT<missing VAR> are established.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 1200, ',', 0],[5.0, 5000, ',', 0],[10.0, 5, ',', 0],[32.0, 7, ',', 0],[61.0, 50, ',', 1]

K
###Positive magnetoresistance and chiral anomaly in exfoliated type-II Weyl semimetal $T_\mathrm{d}$-WTe$_{2}$|R. Adhikari,S. Adhikari,B. Faina,M. Terschanski,S. Bork,C. Leimhofer,M. Cinchetti,A. Bonanni###
(1700017, 1700017)
 Atransverse mathrmMRperp sim1200,% and an average carrier mobilityof 5000, cm2V-1s<missing VAR>-1 at T<missing VAR>5,mathrmK for an appliedperpendicular field mu0Hperp  7,mathrmT<missing VAR> are established.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 1200, ',', 0],[18.0, 5000, ',', 0],[3.0, 5, ',', 0],[19.0, 7, ',', 0],[48.0, 50, ',', 1]

H
###Positive magnetoresistance and chiral anomaly in exfoliated type-II Weyl semimetal $T_\mathrm{d}$-WTe$_{2}$|R. Adhikari,S. Adhikari,B. Faina,M. Terschanski,S. Bork,C. Leimhofer,M. Cinchetti,A. Bonanni###
(1700032, 1700032)
 Atransverse mathrmMRperp sim1200,% and an average carrier mobilityof 5000, cm2V-1s<missing VAR>-1 at T<missing VAR>5,mathrmK for an appliedperpendicular field mu0Hperp  7,mathrmT<missing VAR> are established.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 1200, ',', 0],[33.0, 5000, ',', 0],[18.0, 5, ',', 0],[4.0, 7, ',', 0],[33.0, 50, ',', 1]

K
###Positive magnetoresistance and chiral anomaly in exfoliated type-II Weyl semimetal $T_\mathrm{d}$-WTe$_{2}$|R. Adhikari,S. Adhikari,B. Faina,M. Terschanski,S. Bork,C. Leimhofer,M. Cinchetti,A. Bonanni###
(1700068, 1700068)
 Thesystem follows a Fermi liquid model for T<missing VAR>leq50,mathrmK and theanisotropy of the Fermi surface is concluded to be at the origin of theobserved positive MR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 1200, ',', 1],[69.0, 5000, ',', 1],[54.0, 5, ',', 1],[32.0, 7, ',', 1],[3.0, 50, ',', 0]

CsV3Sb5
###Anisotropic superconducting properties of Kagome metal CsV3Sb5|Shunli Ni,Sheng Ma,Yuhang Zhang,Jie Yuan,Haitao Yang,Zouyouwei Lu,Ningning Wang,Jianping Sun,Zhen Zhao,Dong Li,Shaobo Liu,Hua Zhang,Hui Chen,Kui Jin,Jinguang Cheng,Li Yu,Fang Zhou,Xiaoli Dong,Jiangping Hu,Hong-Jun Gao,Zhongxian Zhao###
(1700223, 1700227)
Anisotropic superconducting properties of Kagome metal CsV3Sb5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5555555555555556,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 3.5, 'K', 1],[177.0, 1, ',', 3],[245.0, 3.5, 'K', 4],[335.0, 2.8, 'K', 6],[368.0, 60, 'o', 6]

(SC)
###Anisotropic superconducting properties of Kagome metal CsV3Sb5|Shunli Ni,Sheng Ma,Yuhang Zhang,Jie Yuan,Haitao Yang,Zouyouwei Lu,Ningning Wang,Jianping Sun,Zhen Zhao,Dong Li,Shaobo Liu,Hua Zhang,Hui Chen,Kui Jin,Jinguang Cheng,Li Yu,Fang Zhou,Xiaoli Dong,Jiangping Hu,Hong-Jun Gao,Zhongxian Zhao###
(1700240, 1700243)
 We systematically measure the superconducting (SC) and mixed state propertiesof high-quality CsV3Sb5 single crystals with Tc  3.5 K.
Featurization successful!
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 3.5, 'K', 0],[161.0, 1, ',', 2],[229.0, 3.5, 'K', 3],[319.0, 2.8, 'K', 5],[352.0, 60, 'o', 5]

CsV3Sb5
###Anisotropic superconducting properties of Kagome metal CsV3Sb5|Shunli Ni,Sheng Ma,Yuhang Zhang,Jie Yuan,Haitao Yang,Zouyouwei Lu,Ningning Wang,Jianping Sun,Zhen Zhao,Dong Li,Shaobo Liu,Hua Zhang,Hui Chen,Kui Jin,Jinguang Cheng,Li Yu,Fang Zhou,Xiaoli Dong,Jiangping Hu,Hong-Jun Gao,Zhongxian Zhao###
(1700260, 1700264)
 We systematically measure the superconducting (SC) and mixed state propertiesof high-quality CsV3Sb5 single crystals with Tc  3.5 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5555555555555556,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 3.5, 'K', 0],[140.0, 1, ',', 2],[208.0, 3.5, 'K', 3],[298.0, 2.8, 'K', 5],[331.0, 60, 'o', 5]

Tc
###Anisotropic superconducting properties of Kagome metal CsV3Sb5|Shunli Ni,Sheng Ma,Yuhang Zhang,Jie Yuan,Haitao Yang,Zouyouwei Lu,Ningning Wang,Jianping Sun,Zhen Zhao,Dong Li,Shaobo Liu,Hua Zhang,Hui Chen,Kui Jin,Jinguang Cheng,Li Yu,Fang Zhou,Xiaoli Dong,Jiangping Hu,Hong-Jun Gao,Zhongxian Zhao###
(1700272, 1700272)
 We systematically measure the superconducting (SC) and mixed state propertiesof high-quality CsV3Sb5 single crystals with Tc  3.5 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 3.5, 'K', 0],[132.0, 1, ',', 2],[200.0, 3.5, 'K', 3],[290.0, 2.8, 'K', 5],[323.0, 60, 'o', 5]

SC
###Anisotropic superconducting properties of Kagome metal CsV3Sb5|Shunli Ni,Sheng Ma,Yuhang Zhang,Jie Yuan,Haitao Yang,Zouyouwei Lu,Ningning Wang,Jianping Sun,Zhen Zhao,Dong Li,Shaobo Liu,Hua Zhang,Hui Chen,Kui Jin,Jinguang Cheng,Li Yu,Fang Zhou,Xiaoli Dong,Jiangping Hu,Hong-Jun Gao,Zhongxian Zhao###
(1700448, 1700449)
 BothHc1(T) and SC diamagnetic signal are found to change little initially below Tc 3.5 K and then to increase abruptly upon cooling to a characteristictemperature of 2.8 K.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[174.0, 3.5, 'K', 3],[44.0, 1, ',', 1],[23.0, 3.5, 'K', 0],[113.0, 2.8, 'K', 2],[146.0, 60, 'o', 2]

Tc
###Anisotropic superconducting properties of Kagome metal CsV3Sb5|Shunli Ni,Sheng Ma,Yuhang Zhang,Jie Yuan,Haitao Yang,Zouyouwei Lu,Ningning Wang,Jianping Sun,Zhen Zhao,Dong Li,Shaobo Liu,Hua Zhang,Hui Chen,Kui Jin,Jinguang Cheng,Li Yu,Fang Zhou,Xiaoli Dong,Jiangping Hu,Hong-Jun Gao,Zhongxian Zhao###
(1700469, 1700469)
 BothHc1(T) and SC diamagnetic signal are found to change little initially below Tc 3.5 K and then to increase abruptly upon cooling to a characteristictemperature of 2.8 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[195.0, 3.5, 'K', 3],[65.0, 1, ',', 1],[3.0, 3.5, 'K', 0],[93.0, 2.8, 'K', 2],[126.0, 60, 'o', 2]

K
###Anisotropic superconducting properties of Kagome metal CsV3Sb5|Shunli Ni,Sheng Ma,Yuhang Zhang,Jie Yuan,Haitao Yang,Zouyouwei Lu,Ningning Wang,Jianping Sun,Zhen Zhao,Dong Li,Shaobo Liu,Hua Zhang,Hui Chen,Kui Jin,Jinguang Cheng,Li Yu,Fang Zhou,Xiaoli Dong,Jiangping Hu,Hong-Jun Gao,Zhongxian Zhao###
(1700501, 1700501)
 BothHc1(T) and SC diamagnetic signal are found to change little initially below Tc 3.5 K and then to increase abruptly upon cooling to a characteristictemperature of 2.8 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[227.0, 3.5, 'K', 3],[97.0, 1, ',', 1],[29.0, 3.5, 'K', 0],[61.0, 2.8, 'K', 2],[94.0, 60, 'o', 2]

UTe2
###Field-Induced Superconductivity near the Superconducting Critical Pressure in UTe2|Dai Aoki,Motoi Kimata,Yoshiki J. Sato,Georg Knebel,Fuminori Honda,Ai Nakamura,Dexin Li,Yoshiya Homma,Yusei Shimizu,William Knafo,Daniel Braithwaite,Michal Valiska,Alexandre Pourret,Jean-Pascal Brison,Jacques Flouquet###
(1700691, 1700693)
Field-Induced Superconductivity near the Superconducting Critical Pressure in UTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[235.0, 20, 'T', 3],[495.0, 30, 'deg', 8]

UTe2
###Field-Induced Superconductivity near the Superconducting Critical Pressure in UTe2|Dai Aoki,Motoi Kimata,Yoshiki J. Sato,Georg Knebel,Fuminori Honda,Ai Nakamura,Dexin Li,Yoshiya Homma,Yusei Shimizu,William Knafo,Daniel Braithwaite,Michal Valiska,Alexandre Pourret,Jean-Pascal Brison,Jacques Flouquet###
(1700716, 1700718)
 We report the magnetoresistance in the novel spin-triplet superconductor UTe2under pressure close to the critical pressure Pc, where the superconductingphase terminates, for field along the three a, b<missing VAR> and c<missing VAR>-axes in the orthorhombicstructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[210.0, 20, 'T', 2],[470.0, 30, 'deg', 7]

H
###Field-Induced Superconductivity near the Superconducting Critical Pressure in UTe2|Dai Aoki,Motoi Kimata,Yoshiki J. Sato,Georg Knebel,Fuminori Honda,Ai Nakamura,Dexin Li,Yoshiya Homma,Yusei Shimizu,William Knafo,Daniel Braithwaite,Michal Valiska,Alexandre Pourret,Jean-Pascal Brison,Jacques Flouquet###
(1700789, 1700789)
 The superconducting phase for H // a-axis just below Pc shows afield-reentrant behavior due to the competition with the emergence of magneticorder at low fields.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 20, 'T', 1],[399.0, 30, 'deg', 6]

H
###Field-Induced Superconductivity near the Superconducting Critical Pressure in UTe2|Dai Aoki,Motoi Kimata,Yoshiki J. Sato,Georg Knebel,Fuminori Honda,Ai Nakamura,Dexin Li,Yoshiya Homma,Yusei Shimizu,William Knafo,Daniel Braithwaite,Michal Valiska,Alexandre Pourret,Jean-Pascal Brison,Jacques Flouquet###
(1700856, 1700856)
 The upper critical field Hc2 for H // c<missing VAR>-axis shows aquasi-vertical increase in the H-T<missing VAR> phase diagram just below Pc, indicating thatsuperconductivity is reinforced by the strong fluctuations which persist evenat high fields above 20T.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 20, 'T', 0],[332.0, 30, 'deg', 5]

H
###Field-Induced Superconductivity near the Superconducting Critical Pressure in UTe2|Dai Aoki,Motoi Kimata,Yoshiki J. Sato,Georg Knebel,Fuminori Honda,Ai Nakamura,Dexin Li,Yoshiya Homma,Yusei Shimizu,William Knafo,Daniel Braithwaite,Michal Valiska,Alexandre Pourret,Jean-Pascal Brison,Jacques Flouquet###
(1700880, 1700880)
 The upper critical field Hc2 for H // c<missing VAR>-axis shows aquasi-vertical increase in the H-T<missing VAR> phase diagram just below Pc, indicating thatsuperconductivity is reinforced by the strong fluctuations which persist evenat high fields above 20T.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 20, 'T', 0],[308.0, 30, 'deg', 5]

URhGe
###Field-Induced Superconductivity near the Superconducting Critical Pressure in UTe2|Dai Aoki,Motoi Kimata,Yoshiki J. Sato,Georg Knebel,Fuminori Honda,Ai Nakamura,Dexin Li,Yoshiya Homma,Yusei Shimizu,William Knafo,Daniel Braithwaite,Michal Valiska,Alexandre Pourret,Jean-Pascal Brison,Jacques Flouquet###
(1701235, 1701237)
 from b<missing VAR> to c<missing VAR>-axis at ambient pressure aswell as the field-reentrant (-reinforced) superconductivity in ferromagneticsuperconductors, URhGe and UCoGe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[307.0, 20, 'T', 6],[47.0, 30, 'deg', 1]

UCoGe
###Field-Induced Superconductivity near the Superconducting Critical Pressure in UTe2|Dai Aoki,Motoi Kimata,Yoshiki J. Sato,Georg Knebel,Fuminori Honda,Ai Nakamura,Dexin Li,Yoshiya Homma,Yusei Shimizu,William Knafo,Daniel Braithwaite,Michal Valiska,Alexandre Pourret,Jean-Pascal Brison,Jacques Flouquet###
(1701241, 1701243)
 from b<missing VAR> to c<missing VAR>-axis at ambient pressure aswell as the field-reentrant (-reinforced) superconductivity in ferromagneticsuperconductors, URhGe and UCoGe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[313.0, 20, 'T', 6],[53.0, 30, 'deg', 1]

C2
###Comparison of highly-compressed C2/m-SnH12 superhydride with conventional superconductors|E. F. Talantsev###
(1701262, 1701263)
Comparison of highly-compressed C2/m<missing VAR>-SnH12 superhydride with conventional superconductors.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[332.0, 70, 'K', 6],[400.0, 9.2, 'meV', 7],[420.0, 3.3, ',', 7]

SnH12
###Comparison of highly-compressed C2/m-SnH12 superhydride with conventional superconductors|E. F. Talantsev###
(1701267, 1701269)
Comparison of highly-compressed C2/m<missing VAR>-SnH12 superhydride with conventional superconductors.
Featurization terminated normally.
0.9230769230769231,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[326.0, 70, 'K', 6],[394.0, 9.2, 'meV', 7],[414.0, 3.3, ',', 7]

Tc
###Comparison of highly-compressed C2/m-SnH12 superhydride with conventional superconductors|E. F. Talantsev###
(1701371, 1701371)
 25 741) predictedhigh-temperature superconductivity in hydrogen-rich metallic alloys, based onan idea that these compounds should exhibit high Debye frequency of the protonlattice, which boosts the superconducting transition temperature, Tc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[224.0, 70, 'K', 2],[292.0, 9.2, 'meV', 3],[312.0, 3.3, ',', 3]

H3S
###Comparison of highly-compressed C2/m-SnH12 superhydride with conventional superconductors|E. F. Talantsev###
(1701440, 1701442)
 The ideahas got full confirmation more than four decades later when Drozdov et al (2015Nature 525 73) experimentally discovered near-room-temperaturesuperconductivity in highly-compressed sulphur superhydride, H3S.
Featurization terminated normally.
0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 70, 'K', 1],[221.0, 9.2, 'meV', 2],[241.0, 3.3, ',', 2]

Ba
###Comparison of highly-compressed C2/m-SnH12 superhydride with conventional superconductors|E. F. Talantsev###
(1701475, 1701475)
 To date, morethan a dozen of high-temperature hydrogen-rich superconducting phases in Ba-H,Pr-H, P-H, Pt-H, Ce-H, Th-H, S-H, Y-H, La-H, and (La,Y)-H systems have beensynthesized and, recently, Hong et al (2021 arXiv2101.02846) reported on thediscovery of C2/m<missing VAR>-SnH12 phase with superconducting transition temperature of Tc 70 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 70, 'K', 0],[188.0, 9.2, 'meV', 1],[208.0, 3.3, ',', 1]

H
###Comparison of highly-compressed C2/m-SnH12 superhydride with conventional superconductors|E. F. Talantsev###
(1701477, 1701477)
 To date, morethan a dozen of high-temperature hydrogen-rich superconducting phases in Ba-H,Pr-H, P-H, Pt-H, Ce-H, Th-H, S-H, Y-H, La-H, and (La,Y)-H systems have beensynthesized and, recently, Hong et al (2021 arXiv2101.02846) reported on thediscovery of C2/m<missing VAR>-SnH12 phase with superconducting transition temperature of Tc 70 K.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 70, 'K', 0],[186.0, 9.2, 'meV', 1],[206.0, 3.3, ',', 1]

Pr
###Comparison of highly-compressed C2/m-SnH12 superhydride with conventional superconductors|E. F. Talantsev###
(1701481, 1701481)
 To date, morethan a dozen of high-temperature hydrogen-rich superconducting phases in Ba-H,Pr-H, P-H, Pt-H, Ce-H, Th-H, S-H, Y-H, La-H, and (La,Y)-H systems have beensynthesized and, recently, Hong et al (2021 arXiv2101.02846) reported on thediscovery of C2/m<missing VAR>-SnH12 phase with superconducting transition temperature of Tc 70 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 70, 'K', 0],[182.0, 9.2, 'meV', 1],[202.0, 3.3, ',', 1]

H
###Comparison of highly-compressed C2/m-SnH12 superhydride with conventional superconductors|E. F. Talantsev###
(1701483, 1701483)
 To date, morethan a dozen of high-temperature hydrogen-rich superconducting phases in Ba-H,Pr-H, P-H, Pt-H, Ce-H, Th-H, S-H, Y-H, La-H, and (La,Y)-H systems have beensynthesized and, recently, Hong et al (2021 arXiv2101.02846) reported on thediscovery of C2/m<missing VAR>-SnH12 phase with superconducting transition temperature of Tc 70 K.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 70, 'K', 0],[180.0, 9.2, 'meV', 1],[200.0, 3.3, ',', 1]

P
###Comparison of highly-compressed C2/m-SnH12 superhydride with conventional superconductors|E. F. Talantsev###
(1701486, 1701486)
 To date, morethan a dozen of high-temperature hydrogen-rich superconducting phases in Ba-H,Pr-H, P-H, Pt-H, Ce-H, Th-H, S-H, Y-H, La-H, and (La,Y)-H systems have beensynthesized and, recently, Hong et al (2021 arXiv2101.02846) reported on thediscovery of C2/m<missing VAR>-SnH12 phase with superconducting transition temperature of Tc 70 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 70, 'K', 0],[177.0, 9.2, 'meV', 1],[197.0, 3.3, ',', 1]

H
###Comparison of highly-compressed C2/m-SnH12 superhydride with conventional superconductors|E. F. Talantsev###
(1701488, 1701488)
 To date, morethan a dozen of high-temperature hydrogen-rich superconducting phases in Ba-H,Pr-H, P-H, Pt-H, Ce-H, Th-H, S-H, Y-H, La-H, and (La,Y)-H systems have beensynthesized and, recently, Hong et al (2021 arXiv2101.02846) reported on thediscovery of C2/m<missing VAR>-SnH12 phase with superconducting transition temperature of Tc 70 K.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 70, 'K', 0],[175.0, 9.2, 'meV', 1],[195.0, 3.3, ',', 1]

Pt
###Comparison of highly-compressed C2/m-SnH12 superhydride with conventional superconductors|E. F. Talantsev###
(1701491, 1701491)
 To date, morethan a dozen of high-temperature hydrogen-rich superconducting phases in Ba-H,Pr-H, P-H, Pt-H, Ce-H, Th-H, S-H, Y-H, La-H, and (La,Y)-H systems have beensynthesized and, recently, Hong et al (2021 arXiv2101.02846) reported on thediscovery of C2/m<missing VAR>-SnH12 phase with superconducting transition temperature of Tc 70 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 70, 'K', 0],[172.0, 9.2, 'meV', 1],[192.0, 3.3, ',', 1]

H
###Comparison of highly-compressed C2/m-SnH12 superhydride with conventional superconductors|E. F. Talantsev###
(1701493, 1701493)
 To date, morethan a dozen of high-temperature hydrogen-rich superconducting phases in Ba-H,Pr-H, P-H, Pt-H, Ce-H, Th-H, S-H, Y-H, La-H, and (La,Y)-H systems have beensynthesized and, recently, Hong et al (2021 arXiv2101.02846) reported on thediscovery of C2/m<missing VAR>-SnH12 phase with superconducting transition temperature of Tc 70 K.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 70, 'K', 0],[170.0, 9.2, 'meV', 1],[190.0, 3.3, ',', 1]

Ce
###Comparison of highly-compressed C2/m-SnH12 superhydride with conventional superconductors|E. F. Talantsev###
(1701496, 1701496)
 To date, morethan a dozen of high-temperature hydrogen-rich superconducting phases in Ba-H,Pr-H, P-H, Pt-H, Ce-H, Th-H, S-H, Y-H, La-H, and (La,Y)-H systems have beensynthesized and, recently, Hong et al (2021 arXiv2101.02846) reported on thediscovery of C2/m<missing VAR>-SnH12 phase with superconducting transition temperature of Tc 70 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 70, 'K', 0],[167.0, 9.2, 'meV', 1],[187.0, 3.3, ',', 1]

H
###Comparison of highly-compressed C2/m-SnH12 superhydride with conventional superconductors|E. F. Talantsev###
(1701498, 1701498)
 To date, morethan a dozen of high-temperature hydrogen-rich superconducting phases in Ba-H,Pr-H, P-H, Pt-H, Ce-H, Th-H, S-H, Y-H, La-H, and (La,Y)-H systems have beensynthesized and, recently, Hong et al (2021 arXiv2101.02846) reported on thediscovery of C2/m<missing VAR>-SnH12 phase with superconducting transition temperature of Tc 70 K.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 70, 'K', 0],[165.0, 9.2, 'meV', 1],[185.0, 3.3, ',', 1]

Th
###Comparison of highly-compressed C2/m-SnH12 superhydride with conventional superconductors|E. F. Talantsev###
(1701501, 1701501)
 To date, morethan a dozen of high-temperature hydrogen-rich superconducting phases in Ba-H,Pr-H, P-H, Pt-H, Ce-H, Th-H, S-H, Y-H, La-H, and (La,Y)-H systems have beensynthesized and, recently, Hong et al (2021 arXiv2101.02846) reported on thediscovery of C2/m<missing VAR>-SnH12 phase with superconducting transition temperature of Tc 70 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 70, 'K', 0],[162.0, 9.2, 'meV', 1],[182.0, 3.3, ',', 1]

H
###Comparison of highly-compressed C2/m-SnH12 superhydride with conventional superconductors|E. F. Talantsev###
(1701503, 1701503)
 To date, morethan a dozen of high-temperature hydrogen-rich superconducting phases in Ba-H,Pr-H, P-H, Pt-H, Ce-H, Th-H, S-H, Y-H, La-H, and (La,Y)-H systems have beensynthesized and, recently, Hong et al (2021 arXiv2101.02846) reported on thediscovery of C2/m<missing VAR>-SnH12 phase with superconducting transition temperature of Tc 70 K.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 70, 'K', 0],[160.0, 9.2, 'meV', 1],[180.0, 3.3, ',', 1]

S
###Comparison of highly-compressed C2/m-SnH12 superhydride with conventional superconductors|E. F. Talantsev###
(1701506, 1701506)
 To date, morethan a dozen of high-temperature hydrogen-rich superconducting phases in Ba-H,Pr-H, P-H, Pt-H, Ce-H, Th-H, S-H, Y-H, La-H, and (La,Y)-H systems have beensynthesized and, recently, Hong et al (2021 arXiv2101.02846) reported on thediscovery of C2/m<missing VAR>-SnH12 phase with superconducting transition temperature of Tc 70 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 70, 'K', 0],[157.0, 9.2, 'meV', 1],[177.0, 3.3, ',', 1]

H
###Comparison of highly-compressed C2/m-SnH12 superhydride with conventional superconductors|E. F. Talantsev###
(1701508, 1701508)
 To date, morethan a dozen of high-temperature hydrogen-rich superconducting phases in Ba-H,Pr-H, P-H, Pt-H, Ce-H, Th-H, S-H, Y-H, La-H, and (La,Y)-H systems have beensynthesized and, recently, Hong et al (2021 arXiv2101.02846) reported on thediscovery of C2/m<missing VAR>-SnH12 phase with superconducting transition temperature of Tc 70 K.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 70, 'K', 0],[155.0, 9.2, 'meV', 1],[175.0, 3.3, ',', 1]

Y
###Comparison of highly-compressed C2/m-SnH12 superhydride with conventional superconductors|E. F. Talantsev###
(1701511, 1701511)
 To date, morethan a dozen of high-temperature hydrogen-rich superconducting phases in Ba-H,Pr-H, P-H, Pt-H, Ce-H, Th-H, S-H, Y-H, La-H, and (La,Y)-H systems have beensynthesized and, recently, Hong et al (2021 arXiv2101.02846) reported on thediscovery of C2/m<missing VAR>-SnH12 phase with superconducting transition temperature of Tc 70 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 70, 'K', 0],[152.0, 9.2, 'meV', 1],[172.0, 3.3, ',', 1]

H
###Comparison of highly-compressed C2/m-SnH12 superhydride with conventional superconductors|E. F. Talantsev###
(1701513, 1701513)
 To date, morethan a dozen of high-temperature hydrogen-rich superconducting phases in Ba-H,Pr-H, P-H, Pt-H, Ce-H, Th-H, S-H, Y-H, La-H, and (La,Y)-H systems have beensynthesized and, recently, Hong et al (2021 arXiv2101.02846) reported on thediscovery of C2/m<missing VAR>-SnH12 phase with superconducting transition temperature of Tc 70 K.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 70, 'K', 0],[150.0, 9.2, 'meV', 1],[170.0, 3.3, ',', 1]

La
###Comparison of highly-compressed C2/m-SnH12 superhydride with conventional superconductors|E. F. Talantsev###
(1701516, 1701516)
 To date, morethan a dozen of high-temperature hydrogen-rich superconducting phases in Ba-H,Pr-H, P-H, Pt-H, Ce-H, Th-H, S-H, Y-H, La-H, and (La,Y)-H systems have beensynthesized and, recently, Hong et al (2021 arXiv2101.02846) reported on thediscovery of C2/m<missing VAR>-SnH12 phase with superconducting transition temperature of Tc 70 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 70, 'K', 0],[147.0, 9.2, 'meV', 1],[167.0, 3.3, ',', 1]

H
###Comparison of highly-compressed C2/m-SnH12 superhydride with conventional superconductors|E. F. Talantsev###
(1701518, 1701518)
 To date, morethan a dozen of high-temperature hydrogen-rich superconducting phases in Ba-H,Pr-H, P-H, Pt-H, Ce-H, Th-H, S-H, Y-H, La-H, and (La,Y)-H systems have beensynthesized and, recently, Hong et al (2021 arXiv2101.02846) reported on thediscovery of C2/m<missing VAR>-SnH12 phase with superconducting transition temperature of Tc 70 K.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 70, 'K', 0],[145.0, 9.2, 'meV', 1],[165.0, 3.3, ',', 1]

La
###Comparison of highly-compressed C2/m-SnH12 superhydride with conventional superconductors|E. F. Talantsev###
(1701524, 1701524)
 To date, morethan a dozen of high-temperature hydrogen-rich superconducting phases in Ba-H,Pr-H, P-H, Pt-H, Ce-H, Th-H, S-H, Y-H, La-H, and (La,Y)-H systems have beensynthesized and, recently, Hong et al (2021 arXiv2101.02846) reported on thediscovery of C2/m<missing VAR>-SnH12 phase with superconducting transition temperature of Tc 70 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 70, 'K', 0],[139.0, 9.2, 'meV', 1],[159.0, 3.3, ',', 1]

Y
###Comparison of highly-compressed C2/m-SnH12 superhydride with conventional superconductors|E. F. Talantsev###
(1701526, 1701526)
 To date, morethan a dozen of high-temperature hydrogen-rich superconducting phases in Ba-H,Pr-H, P-H, Pt-H, Ce-H, Th-H, S-H, Y-H, La-H, and (La,Y)-H systems have beensynthesized and, recently, Hong et al (2021 arXiv2101.02846) reported on thediscovery of C2/m<missing VAR>-SnH12 phase with superconducting transition temperature of Tc 70 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 70, 'K', 0],[137.0, 9.2, 'meV', 1],[157.0, 3.3, ',', 1]

H
###Comparison of highly-compressed C2/m-SnH12 superhydride with conventional superconductors|E. F. Talantsev###
(1701529, 1701529)
 To date, morethan a dozen of high-temperature hydrogen-rich superconducting phases in Ba-H,Pr-H, P-H, Pt-H, Ce-H, Th-H, S-H, Y-H, La-H, and (La,Y)-H systems have beensynthesized and, recently, Hong et al (2021 arXiv2101.02846) reported on thediscovery of C2/m<missing VAR>-SnH12 phase with superconducting transition temperature of Tc 70 K.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 70, 'K', 0],[134.0, 9.2, 'meV', 1],[154.0, 3.3, ',', 1]

C2
###Comparison of highly-compressed C2/m-SnH12 superhydride with conventional superconductors|E. F. Talantsev###
(1701571, 1701572)
 To date, morethan a dozen of high-temperature hydrogen-rich superconducting phases in Ba-H,Pr-H, P-H, Pt-H, Ce-H, Th-H, S-H, Y-H, La-H, and (La,Y)-H systems have beensynthesized and, recently, Hong et al (2021 arXiv2101.02846) reported on thediscovery of C2/m<missing VAR>-SnH12 phase with superconducting transition temperature of Tc 70 K.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 70, 'K', 0],[91.0, 9.2, 'meV', 1],[111.0, 3.3, ',', 1]

SnH12
###Comparison of highly-compressed C2/m-SnH12 superhydride with conventional superconductors|E. F. Talantsev###
(1701576, 1701578)
 To date, morethan a dozen of high-temperature hydrogen-rich superconducting phases in Ba-H,Pr-H, P-H, Pt-H, Ce-H, Th-H, S-H, Y-H, La-H, and (La,Y)-H systems have beensynthesized and, recently, Hong et al (2021 arXiv2101.02846) reported on thediscovery of C2/m<missing VAR>-SnH12 phase with superconducting transition temperature of Tc 70 K.
Featurization terminated normally.
0.9230769230769231,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 70, 'K', 0],[85.0, 9.2, 'meV', 1],[105.0, 3.3, ',', 1]

Tc
###Comparison of highly-compressed C2/m-SnH12 superhydride with conventional superconductors|E. F. Talantsev###
(1701592, 1701592)
 To date, morethan a dozen of high-temperature hydrogen-rich superconducting phases in Ba-H,Pr-H, P-H, Pt-H, Ce-H, Th-H, S-H, Y-H, La-H, and (La,Y)-H systems have beensynthesized and, recently, Hong et al (2021 arXiv2101.02846) reported on thediscovery of C2/m<missing VAR>-SnH12 phase with superconducting transition temperature of Tc 70 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 70, 'K', 0],[71.0, 9.2, 'meV', 1],[91.0, 3.3, ',', 1]

B
###Comparison of highly-compressed C2/m-SnH12 superhydride with conventional superconductors|E. F. Talantsev###
(1701615, 1701615)
 Here we analyse the magnetoresistance data, R(T,B), of C2/m<missing VAR>-SnH12 phaseand report that this superhydride exhibits the ground state superconducting gapof Delta(0)  9.2 meV, the ratio of 2Delta(0)/k<missing VAR>BTc  3.3, and 0.010 <Tc/Tf < 0.014 (where Tf is the Fermi temperature) and, thus, C2/m<missing VAR>-SnH12 fallsinto unconventional superconductors band in the Uemura plot.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 70, 'K', 1],[48.0, 9.2, 'meV', 0],[68.0, 3.3, ',', 0]

C2
###Comparison of highly-compressed C2/m-SnH12 superhydride with conventional superconductors|E. F. Talantsev###
(1701621, 1701622)
 Here we analyse the magnetoresistance data, R(T,B), of C2/m<missing VAR>-SnH12 phaseand report that this superhydride exhibits the ground state superconducting gapof Delta(0)  9.2 meV, the ratio of 2Delta(0)/k<missing VAR>BTc  3.3, and 0.010 <Tc/Tf < 0.014 (where Tf is the Fermi temperature) and, thus, C2/m<missing VAR>-SnH12 fallsinto unconventional superconductors band in the Uemura plot.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 70, 'K', 1],[41.0, 9.2, 'meV', 0],[61.0, 3.3, ',', 0]

SnH12
###Comparison of highly-compressed C2/m-SnH12 superhydride with conventional superconductors|E. F. Talantsev###
(1701626, 1701628)
 Here we analyse the magnetoresistance data, R(T,B), of C2/m<missing VAR>-SnH12 phaseand report that this superhydride exhibits the ground state superconducting gapof Delta(0)  9.2 meV, the ratio of 2Delta(0)/k<missing VAR>BTc  3.3, and 0.010 <Tc/Tf < 0.014 (where Tf is the Fermi temperature) and, thus, C2/m<missing VAR>-SnH12 fallsinto unconventional superconductors band in the Uemura plot.
Featurization terminated normally.
0.9230769230769231,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 70, 'K', 1],[35.0, 9.2, 'meV', 0],[55.0, 3.3, ',', 0]

BTc
###Comparison of highly-compressed C2/m-SnH12 superhydride with conventional superconductors|E. F. Talantsev###
(1701679, 1701680)
 Here we analyse the magnetoresistance data, R(T,B), of C2/m<missing VAR>-SnH12 phaseand report that this superhydride exhibits the ground state superconducting gapof Delta(0)  9.2 meV, the ratio of 2Delta(0)/k<missing VAR>BTc  3.3, and 0.010 <Tc/Tf < 0.014 (where Tf is the Fermi temperature) and, thus, C2/m<missing VAR>-SnH12 fallsinto unconventional superconductors band in the Uemura plot.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 70, 'K', 1],[16.0, 9.2, 'meV', 0],[3.0, 3.3, ',', 0]

Tc
###Comparison of highly-compressed C2/m-SnH12 superhydride with conventional superconductors|E. F. Talantsev###
(1701693, 1701693)
 Here we analyse the magnetoresistance data, R(T,B), of C2/m<missing VAR>-SnH12 phaseand report that this superhydride exhibits the ground state superconducting gapof Delta(0)  9.2 meV, the ratio of 2Delta(0)/k<missing VAR>BTc  3.3, and 0.010 <Tc/Tf < 0.014 (where Tf is the Fermi temperature) and, thus, C2/m<missing VAR>-SnH12 fallsinto unconventional superconductors band in the Uemura plot.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 70, 'K', 1],[30.0, 9.2, 'meV', 0],[10.0, 3.3, ',', 0]

C2
###Comparison of highly-compressed C2/m-SnH12 superhydride with conventional superconductors|E. F. Talantsev###
(1701721, 1701722)
 Here we analyse the magnetoresistance data, R(T,B), of C2/m<missing VAR>-SnH12 phaseand report that this superhydride exhibits the ground state superconducting gapof Delta(0)  9.2 meV, the ratio of 2Delta(0)/k<missing VAR>BTc  3.3, and 0.010 <Tc/Tf < 0.014 (where Tf is the Fermi temperature) and, thus, C2/m<missing VAR>-SnH12 fallsinto unconventional superconductors band in the Uemura plot.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 70, 'K', 1],[58.0, 9.2, 'meV', 0],[38.0, 3.3, ',', 0]

SnH12
###Comparison of highly-compressed C2/m-SnH12 superhydride with conventional superconductors|E. F. Talantsev###
(1701726, 1701728)
 Here we analyse the magnetoresistance data, R(T,B), of C2/m<missing VAR>-SnH12 phaseand report that this superhydride exhibits the ground state superconducting gapof Delta(0)  9.2 meV, the ratio of 2Delta(0)/k<missing VAR>BTc  3.3, and 0.010 <Tc/Tf < 0.014 (where Tf is the Fermi temperature) and, thus, C2/m<missing VAR>-SnH12 fallsinto unconventional superconductors band in the Uemura plot.
Featurization terminated normally.
0.9230769230769231,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 70, 'K', 1],[63.0, 9.2, 'meV', 0],[43.0, 3.3, ',', 0]

EuMnSb2
###Field-induced metal-to-insulator transition and colossal anisotropic magnetoresistance in a nearly Dirac material EuMnSb$_2$|Z. L. Sun,A. F. Wang,H. M. Mu,H. H. Wang,Z. F. Wang,T. Wu,Z. Y. Wang,X. Y. Zhou,X. H. Chen###
(1701788, 1701791)
Field-induced metal-to-insulator transition and colossal anisotropic magnetoresistance in a nearly Dirac material EuMnSb2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[263.0, 6, '%', 5],[267.0, 2, 'K', 5]

(SOC)
###Field-induced metal-to-insulator transition and colossal anisotropic magnetoresistance in a nearly Dirac material EuMnSb$_2$|Z. L. Sun,A. F. Wang,H. M. Mu,H. H. Wang,Z. F. Wang,T. Wu,Z. Y. Wang,X. Y. Zhou,X. H. Chen###
(1701909, 1701913)
 For example, anisotropic magnetoresistance (AMR) effect isutilized to read out the information stored by various magnetic structures,which usually originates from atomic spin-orbit coupling (SOC).
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 6, '%', 3],[145.0, 2, 'K', 3]

EuMnSb2
###Field-induced metal-to-insulator transition and colossal anisotropic magnetoresistance in a nearly Dirac material EuMnSb$_2$|Z. L. Sun,A. F. Wang,H. M. Mu,H. H. Wang,Z. F. Wang,T. Wu,Z. Y. Wang,X. Y. Zhou,X. H. Chen###
(1702009, 1702012)
 Here, we discover a colossal AMR effect during thefield-induced metal-to-insulator transition (MIT) in a nearly Dirac materialEuMnSb2 with an antiferromagnetic order of Eu2 moments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 6, '%', 1],[46.0, 2, 'K', 1]

Eu2
###Field-induced metal-to-insulator transition and colossal anisotropic magnetoresistance in a nearly Dirac material EuMnSb$_2$|Z. L. Sun,A. F. Wang,H. M. Mu,H. H. Wang,Z. F. Wang,T. Wu,Z. Y. Wang,X. Y. Zhou,X. H. Chen###
(1702024, 1702025)
 Here, we discover a colossal AMR effect during thefield-induced metal-to-insulator transition (MIT) in a nearly Dirac materialEuMnSb2 with an antiferromagnetic order of Eu2 moments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 6, '%', 1],[33.0, 2, 'K', 1]

SOC
###Field-induced metal-to-insulator transition and colossal anisotropic magnetoresistance in a nearly Dirac material EuMnSb$_2$|Z. L. Sun,A. F. Wang,H. M. Mu,H. H. Wang,Z. F. Wang,T. Wu,Z. Y. Wang,X. Y. Zhou,X. H. Chen###
(1702125, 1702127)
 Based on density functional theory calculations, a Dirac-likeband structure, which is strongly dependent on SOC, is confirmed around Y pointand dominates the overall transport properties in the present sample withpredominant electron-type carriers.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 6, '%', 1],[67.0, 2, 'K', 1]

Y
###Field-induced metal-to-insulator transition and colossal anisotropic magnetoresistance in a nearly Dirac material EuMnSb$_2$|Z. L. Sun,A. F. Wang,H. M. Mu,H. H. Wang,Z. F. Wang,T. Wu,Z. Y. Wang,X. Y. Zhou,X. H. Chen###
(1702136, 1702136)
 Based on density functional theory calculations, a Dirac-likeband structure, which is strongly dependent on SOC, is confirmed around Y pointand dominates the overall transport properties in the present sample withpredominant electron-type carriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 6, '%', 1],[78.0, 2, 'K', 1]

Eu2
###Field-induced metal-to-insulator transition and colossal anisotropic magnetoresistance in a nearly Dirac material EuMnSb$_2$|Z. L. Sun,A. F. Wang,H. M. Mu,H. H. Wang,Z. F. Wang,T. Wu,Z. Y. Wang,X. Y. Zhou,X. H. Chen###
(1702216, 1702217)
 Moreover, it is also revealed that theindirect band gap around Fermi level is dependent on the magnetic structure ofEu2 moments, which leads to the field-induced MIT and plays a key role onthe colossal AMR effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 6, '%', 2],[158.0, 2, 'K', 2]

EuMnSb2
###Field-induced metal-to-insulator transition and colossal anisotropic magnetoresistance in a nearly Dirac material EuMnSb$_2$|Z. L. Sun,A. F. Wang,H. M. Mu,H. H. Wang,Z. F. Wang,T. Wu,Z. Y. Wang,X. Y. Zhou,X. H. Chen###
(1702288, 1702291)
 Finally, our present work suggests that the similarantiferromagnetic topological materials as EuMnSb2, in which Dirac-likefermions is strongly modulated by SOC and antiferromagnetism, would be afertile ground to explore applicably appreciated AMR effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[234.0, 6, '%', 3],[230.0, 2, 'K', 3]

SOC
###Field-induced metal-to-insulator transition and colossal anisotropic magnetoresistance in a nearly Dirac material EuMnSb$_2$|Z. L. Sun,A. F. Wang,H. M. Mu,H. H. Wang,Z. F. Wang,T. Wu,Z. Y. Wang,X. Y. Zhou,X. H. Chen###
(1702313, 1702315)
 Finally, our present work suggests that the similarantiferromagnetic topological materials as EuMnSb2, in which Dirac-likefermions is strongly modulated by SOC and antiferromagnetism, would be afertile ground to explore applicably appreciated AMR effect.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[259.0, 6, '%', 3],[255.0, 2, 'K', 3]

FeSi
###Emergence of spin-orbit coupled ferromagnetic surface state derived from Zak phase in a nonmagnetic insulator FeSi|Yusuke Ohtsuka,Naoya Kanazawa,Motoaki Hirayama,Akira Matsui,Takuya Nomoto,Ryotaro Arita,Taro Nakajima,Takayasu Hanashima,Victor Ukleev,Hiroyuki Aoki,Masataka Mogi,Kohei Fujiwara,Atsushi Tsukazaki,Masakazu Ichikawa,Masashi Kawasaki,Yoshinori Tokura###
(1702388, 1702389)
Emergence of spin-orbit coupled ferromagnetic surface state derived from Zak phase in a nonmagnetic insulator FeSi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeSi
###Emergence of spin-orbit coupled ferromagnetic surface state derived from Zak phase in a nonmagnetic insulator FeSi|Yusuke Ohtsuka,Naoya Kanazawa,Motoaki Hirayama,Akira Matsui,Takuya Nomoto,Ryotaro Arita,Taro Nakajima,Takayasu Hanashima,Victor Ukleev,Hiroyuki Aoki,Masataka Mogi,Kohei Fujiwara,Atsushi Tsukazaki,Masakazu Ichikawa,Masashi Kawasaki,Yoshinori Tokura###
(1702398, 1702399)
 A chiral compound FeSi is a nonmagnetic narrow-gap insulator, exhibitingpeculiar charge and spin dynamics beyond a simple band-structure picture.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeSi
###Emergence of spin-orbit coupled ferromagnetic surface state derived from Zak phase in a nonmagnetic insulator FeSi|Yusuke Ohtsuka,Naoya Kanazawa,Motoaki Hirayama,Akira Matsui,Takuya Nomoto,Ryotaro Arita,Taro Nakajima,Takayasu Hanashima,Victor Ukleev,Hiroyuki Aoki,Masataka Mogi,Kohei Fujiwara,Atsushi Tsukazaki,Masakazu Ichikawa,Masashi Kawasaki,Yoshinori Tokura###
(1702536, 1702537)
 Here we demonstrate an inherent surfaceferromagnetic-metal state of FeSi thin films and its strong spin-orbit-coupling(SOC) properties through multiple characterizations of the two-dimensional (2D)conductance, magnetization and spintronic functionality.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(SOC)
###Emergence of spin-orbit coupled ferromagnetic surface state derived from Zak phase in a nonmagnetic insulator FeSi|Yusuke Ohtsuka,Naoya Kanazawa,Motoaki Hirayama,Akira Matsui,Takuya Nomoto,Ryotaro Arita,Taro Nakajima,Takayasu Hanashima,Victor Ukleev,Hiroyuki Aoki,Masataka Mogi,Kohei Fujiwara,Atsushi Tsukazaki,Masakazu Ichikawa,Masashi Kawasaki,Yoshinori Tokura###
(1702556, 1702560)
 Here we demonstrate an inherent surfaceferromagnetic-metal state of FeSi thin films and its strong spin-orbit-coupling(SOC) properties through multiple characterizations of the two-dimensional (2D)conductance, magnetization and spintronic functionality.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Emergence of spin-orbit coupled ferromagnetic surface state derived from Zak phase in a nonmagnetic insulator FeSi|Yusuke Ohtsuka,Naoya Kanazawa,Motoaki Hirayama,Akira Matsui,Takuya Nomoto,Ryotaro Arita,Taro Nakajima,Takayasu Hanashima,Victor Ukleev,Hiroyuki Aoki,Masataka Mogi,Kohei Fujiwara,Atsushi Tsukazaki,Masakazu Ichikawa,Masashi Kawasaki,Yoshinori Tokura###
(1702662, 1702662)
 As a consequence of the spin-momentum locking,non-equilibrium spin accumulation causes magnetization switching.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SOC
###Emergence of spin-orbit coupled ferromagnetic surface state derived from Zak phase in a nonmagnetic insulator FeSi|Yusuke Ohtsuka,Naoya Kanazawa,Motoaki Hirayama,Akira Matsui,Takuya Nomoto,Ryotaro Arita,Taro Nakajima,Takayasu Hanashima,Victor Ukleev,Hiroyuki Aoki,Masataka Mogi,Kohei Fujiwara,Atsushi Tsukazaki,Masakazu Ichikawa,Masashi Kawasaki,Yoshinori Tokura###
(1702753, 1702755)
 Ourfindings propose another route to explore noble-metal-free materials forSOC-based spin manipulation.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaMnO3
###Striping of orbital-order with charge-disorder in optimally doped manganites|Wei-Tin Chen,Chin-Wei Wang,Ching-Chia Cheng,Yu-Chun Chuang,Arkadiy Simonov,Nicholas C. Bristowe,Mark S. Senn###
(1702803, 1702806)
 The phase diagrams of LaMnO3 perovskites have been intensely studied dueto the colossal magnetoresistance (CMR) exhibited by compositions around thefrac38th doping level.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Striping of orbital-order with charge-disorder in optimally doped manganites|Wei-Tin Chen,Chin-Wei Wang,Ching-Chia Cheng,Yu-Chun Chuang,Arkadiy Simonov,Nicholas C. Bristowe,Mark S. Senn###
(1702830, 1702830)
 The phase diagrams of LaMnO3 perovskites have been intensely studied dueto the colossal magnetoresistance (CMR) exhibited by compositions around thefrac38th doping level.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Striping of orbital-order with charge-disorder in optimally doped manganites|Wei-Tin Chen,Chin-Wei Wang,Ching-Chia Cheng,Yu-Chun Chuang,Arkadiy Simonov,Nicholas C. Bristowe,Mark S. Senn###
(1702869, 1702869)
 However, phase segregation betweenferromagnetic (FM) metallic and antiferromagnetic (AFM) insulating states,which itself is believed to be responsible for the colossal change inresistance under applied magnetic field, has prevented an atomistic-levelunderstanding of the orbital ordered (OO) state at this doping level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Striping of orbital-order with charge-disorder in optimally doped manganites|Wei-Tin Chen,Chin-Wei Wang,Ching-Chia Cheng,Yu-Chun Chuang,Arkadiy Simonov,Nicholas C. Bristowe,Mark S. Senn###
(1702881, 1702881)
 However, phase segregation betweenferromagnetic (FM) metallic and antiferromagnetic (AFM) insulating states,which itself is believed to be responsible for the colossal change inresistance under applied magnetic field, has prevented an atomistic-levelunderstanding of the orbital ordered (OO) state at this doping level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(OO)
###Striping of orbital-order with charge-disorder in optimally doped manganites|Wei-Tin Chen,Chin-Wei Wang,Ching-Chia Cheng,Yu-Chun Chuang,Arkadiy Simonov,Nicholas C. Bristowe,Mark S. Senn###
(1702948, 1702951)
 However, phase segregation betweenferromagnetic (FM) metallic and antiferromagnetic (AFM) insulating states,which itself is believed to be responsible for the colossal change inresistance under applied magnetic field, has prevented an atomistic-levelunderstanding of the orbital ordered (OO) state at this doping level.
Featurization successful!
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn3
###Striping of orbital-order with charge-disorder in optimally doped manganites|Wei-Tin Chen,Chin-Wei Wang,Ching-Chia Cheng,Yu-Chun Chuang,Arkadiy Simonov,Nicholas C. Bristowe,Mark S. Senn###
(1702997, 1702998)
 Here,through the detailed crystallographic analysis of the phase diagram of aprototype system (AMn3AMn4BO12), we show that the superpositionof two distinct lattice modes gives rise to a striping of OO Jahn-Teller activeMn3 and charge disordered (CD) Mn3.5 layers in a 13 ratio.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O12
###Striping of orbital-order with charge-disorder in optimally doped manganites|Wei-Tin Chen,Chin-Wei Wang,Ching-Chia Cheng,Yu-Chun Chuang,Arkadiy Simonov,Nicholas C. Bristowe,Mark S. Senn###
(1703003, 1703004)
 Here,through the detailed crystallographic analysis of the phase diagram of aprototype system (AMn3AMn4BO12), we show that the superpositionof two distinct lattice modes gives rise to a striping of OO Jahn-Teller activeMn3 and charge disordered (CD) Mn3.5 layers in a 13 ratio.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OO
###Striping of orbital-order with charge-disorder in optimally doped manganites|Wei-Tin Chen,Chin-Wei Wang,Ching-Chia Cheng,Yu-Chun Chuang,Arkadiy Simonov,Nicholas C. Bristowe,Mark S. Senn###
(1703041, 1703042)
 Here,through the detailed crystallographic analysis of the phase diagram of aprototype system (AMn3AMn4BO12), we show that the superpositionof two distinct lattice modes gives rise to a striping of OO Jahn-Teller activeMn3 and charge disordered (CD) Mn3.5 layers in a 13 ratio.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn3
###Striping of orbital-order with charge-disorder in optimally doped manganites|Wei-Tin Chen,Chin-Wei Wang,Ching-Chia Cheng,Yu-Chun Chuang,Arkadiy Simonov,Nicholas C. Bristowe,Mark S. Senn###
(1703051, 1703052)
 Here,through the detailed crystallographic analysis of the phase diagram of aprototype system (AMn3AMn4BO12), we show that the superpositionof two distinct lattice modes gives rise to a striping of OO Jahn-Teller activeMn3 and charge disordered (CD) Mn3.5 layers in a 13 ratio.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Striping of orbital-order with charge-disorder in optimally doped manganites|Wei-Tin Chen,Chin-Wei Wang,Ching-Chia Cheng,Yu-Chun Chuang,Arkadiy Simonov,Nicholas C. Bristowe,Mark S. Senn###
(1703061, 1703061)
 Here,through the detailed crystallographic analysis of the phase diagram of aprototype system (AMn3AMn4BO12), we show that the superpositionof two distinct lattice modes gives rise to a striping of OO Jahn-Teller activeMn3 and charge disordered (CD) Mn3.5 layers in a 13 ratio.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn3.5
###Striping of orbital-order with charge-disorder in optimally doped manganites|Wei-Tin Chen,Chin-Wei Wang,Ching-Chia Cheng,Yu-Chun Chuang,Arkadiy Simonov,Nicholas C. Bristowe,Mark S. Senn###
(1703065, 1703066)
 Here,through the detailed crystallographic analysis of the phase diagram of aprototype system (AMn3AMn4BO12), we show that the superpositionof two distinct lattice modes gives rise to a striping of OO Jahn-Teller activeMn3 and charge disordered (CD) Mn3.5 layers in a 13 ratio.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Striping of orbital-order with charge-disorder in optimally doped manganites|Wei-Tin Chen,Chin-Wei Wang,Ching-Chia Cheng,Yu-Chun Chuang,Arkadiy Simonov,Nicholas C. Bristowe,Mark S. Senn###
(1703123, 1703123)
 This striping of CD<missing VAR> Mn3.5 with Mn3provides a natural mechanism though which long range OO can melt, giving way toa conducting state.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn3.5
###Striping of orbital-order with charge-disorder in optimally doped manganites|Wei-Tin Chen,Chin-Wei Wang,Ching-Chia Cheng,Yu-Chun Chuang,Arkadiy Simonov,Nicholas C. Bristowe,Mark S. Senn###
(1703126, 1703127)
 This striping of CD<missing VAR> Mn3.5 with Mn3provides a natural mechanism though which long range OO can melt, giving way toa conducting state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn3
###Striping of orbital-order with charge-disorder in optimally doped manganites|Wei-Tin Chen,Chin-Wei Wang,Ching-Chia Cheng,Yu-Chun Chuang,Arkadiy Simonov,Nicholas C. Bristowe,Mark S. Senn###
(1703131, 1703132)
 This striping of CD<missing VAR> Mn3.5 with Mn3provides a natural mechanism though which long range OO can melt, giving way toa conducting state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OO
###Striping of orbital-order with charge-disorder in optimally doped manganites|Wei-Tin Chen,Chin-Wei Wang,Ching-Chia Cheng,Yu-Chun Chuang,Arkadiy Simonov,Nicholas C. Bristowe,Mark S. Senn###
(1703151, 1703152)
 This striping of CD<missing VAR> Mn3.5 with Mn3provides a natural mechanism though which long range OO can melt, giving way toa conducting state.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Gd4RhAl
###Competing magnetic interactions and magnetoresistance anomalies in cubic intermetallic compounds, Gd4RhAl and Tb4RhAl, and enhanced magnetocaloric effect for the Tb case|Ram Kumar,Kartik K Iyer,P. L. Paulose,E. V. Sampathkumaran###
(1703202, 1703205)
Competing magnetic interactions and magnetoresistance anomalies in cubic intermetallic compounds, Gd4RhAl and Tb4RhAl, and enhanced magnetocaloric effect for the Tb case.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 1.8, 'K', 3],[231.0, 46, 'K', 4],[241.0, 21, 'K', 4],[252.0, 32, 'and', 4],[253.0, 28, 'K', 4],[468.0, 4, 'f', 8]

Tb4RhAl
###Competing magnetic interactions and magnetoresistance anomalies in cubic intermetallic compounds, Gd4RhAl and Tb4RhAl, and enhanced magnetocaloric effect for the Tb case|Ram Kumar,Kartik K Iyer,P. L. Paulose,E. V. Sampathkumaran###
(1703209, 1703212)
Competing magnetic interactions and magnetoresistance anomalies in cubic intermetallic compounds, Gd4RhAl and Tb4RhAl, and enhanced magnetocaloric effect for the Tb case.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 1.8, 'K', 3],[224.0, 46, 'K', 4],[234.0, 21, 'K', 4],[245.0, 32, 'and', 4],[246.0, 28, 'K', 4],[461.0, 4, 'f', 8]

Tb
###Competing magnetic interactions and magnetoresistance anomalies in cubic intermetallic compounds, Gd4RhAl and Tb4RhAl, and enhanced magnetocaloric effect for the Tb case|Ram Kumar,Kartik K Iyer,P. L. Paulose,E. V. Sampathkumaran###
(1703227, 1703227)
Competing magnetic interactions and magnetoresistance anomalies in cubic intermetallic compounds, Gd4RhAl and Tb4RhAl, and enhanced magnetocaloric effect for the Tb case.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 1.8, 'K', 3],[209.0, 46, 'K', 4],[219.0, 21, 'K', 4],[230.0, 32, 'and', 4],[231.0, 28, 'K', 4],[446.0, 4, 'f', 8]

Gd4RhAl
###Competing magnetic interactions and magnetoresistance anomalies in cubic intermetallic compounds, Gd4RhAl and Tb4RhAl, and enhanced magnetocaloric effect for the Tb case|Ram Kumar,Kartik K Iyer,P. L. Paulose,E. V. Sampathkumaran###
(1703257, 1703260)
 We report complex magnetic, magnetoresistance (MR) and magnetocaloricproperties of Gd4RhAl and Tb4RhAl forming in the Gd4RhIn type cubic structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 1.8, 'K', 2],[176.0, 46, 'K', 3],[186.0, 21, 'K', 3],[197.0, 32, 'and', 3],[198.0, 28, 'K', 3],[413.0, 4, 'f', 7]

Tb4RhAl
###Competing magnetic interactions and magnetoresistance anomalies in cubic intermetallic compounds, Gd4RhAl and Tb4RhAl, and enhanced magnetocaloric effect for the Tb case|Ram Kumar,Kartik K Iyer,P. L. Paulose,E. V. Sampathkumaran###
(1703264, 1703267)
 We report complex magnetic, magnetoresistance (MR) and magnetocaloricproperties of Gd4RhAl and Tb4RhAl forming in the Gd4RhIn type cubic structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 1.8, 'K', 2],[169.0, 46, 'K', 3],[179.0, 21, 'K', 3],[190.0, 32, 'and', 3],[191.0, 28, 'K', 3],[406.0, 4, 'f', 7]

Gd4RhIn
###Competing magnetic interactions and magnetoresistance anomalies in cubic intermetallic compounds, Gd4RhAl and Tb4RhAl, and enhanced magnetocaloric effect for the Tb case|Ram Kumar,Kartik K Iyer,P. L. Paulose,E. V. Sampathkumaran###
(1703275, 1703278)
 We report complex magnetic, magnetoresistance (MR) and magnetocaloricproperties of Gd4RhAl and Tb4RhAl forming in the Gd4RhIn type cubic structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 1.8, 'K', 2],[158.0, 46, 'K', 3],[168.0, 21, 'K', 3],[179.0, 32, 'and', 3],[180.0, 28, 'K', 3],[395.0, 4, 'f', 7]

Gd
###Competing magnetic interactions and magnetoresistance anomalies in cubic intermetallic compounds, Gd4RhAl and Tb4RhAl, and enhanced magnetocaloric effect for the Tb case|Ram Kumar,Kartik K Iyer,P. L. Paulose,E. V. Sampathkumaran###
(1703424, 1703424)
 These characteristic temperatures are For Gd case, T<missing VAR>Nis about 46K and TG is about 21 K, and for Tb, about 32 and 28 K respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 1.8, 'K', 1],[12.0, 46, 'K', 0],[22.0, 21, 'K', 0],[33.0, 32, 'and', 0],[34.0, 28, 'K', 0],[249.0, 4, 'f', 4]

N
###Competing magnetic interactions and magnetoresistance anomalies in cubic intermetallic compounds, Gd4RhAl and Tb4RhAl, and enhanced magnetocaloric effect for the Tb case|Ram Kumar,Kartik K Iyer,P. L. Paulose,E. V. Sampathkumaran###
(1703430, 1703430)
 These characteristic temperatures are For Gd case, T<missing VAR>Nis about 46K and TG is about 21 K, and for Tb, about 32 and 28 K respectively.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 1.8, 'K', 1],[6.0, 46, 'K', 0],[16.0, 21, 'K', 0],[27.0, 32, 'and', 0],[28.0, 28, 'K', 0],[243.0, 4, 'f', 4]

Tb
###Competing magnetic interactions and magnetoresistance anomalies in cubic intermetallic compounds, Gd4RhAl and Tb4RhAl, and enhanced magnetocaloric effect for the Tb case|Ram Kumar,Kartik K Iyer,P. L. Paulose,E. V. Sampathkumaran###
(1703453, 1703453)
 These characteristic temperatures are For Gd case, T<missing VAR>Nis about 46K and TG is about 21 K, and for Tb, about 32 and 28 K respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 1.8, 'K', 1],[17.0, 46, 'K', 0],[7.0, 21, 'K', 0],[4.0, 32, 'and', 0],[5.0, 28, 'K', 0],[220.0, 4, 'f', 4]

N
###Competing magnetic interactions and magnetoresistance anomalies in cubic intermetallic compounds, Gd4RhAl and Tb4RhAl, and enhanced magnetocaloric effect for the Tb case|Ram Kumar,Kartik K Iyer,P. L. Paulose,E. V. Sampathkumaran###
(1703524, 1703524)
 There is a significant MR over a widetemperature range above T<missing VAR>N, similar to the behavior of magnetocaloric effect(MCE) as measured by isothermal entropy change (DeltaS).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 1.8, 'K', 3],[88.0, 46, 'K', 2],[78.0, 21, 'K', 2],[67.0, 32, 'and', 2],[66.0, 28, 'K', 2],[149.0, 4, 'f', 2]

S
###Competing magnetic interactions and magnetoresistance anomalies in cubic intermetallic compounds, Gd4RhAl and Tb4RhAl, and enhanced magnetocaloric effect for the Tb case|Ram Kumar,Kartik K Iyer,P. L. Paulose,E. V. Sampathkumaran###
(1703562, 1703562)
 There is a significant MR over a widetemperature range above T<missing VAR>N, similar to the behavior of magnetocaloric effect(MCE) as measured by isothermal entropy change (DeltaS).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 1.8, 'K', 3],[126.0, 46, 'K', 2],[116.0, 21, 'K', 2],[105.0, 32, 'and', 2],[104.0, 28, 'K', 2],[111.0, 4, 'f', 2]

S
###Competing magnetic interactions and magnetoresistance anomalies in cubic intermetallic compounds, Gd4RhAl and Tb4RhAl, and enhanced magnetocaloric effect for the Tb case|Ram Kumar,Kartik K Iyer,P. L. Paulose,E. V. Sampathkumaran###
(1703582, 1703582)
 An intriguing findingwe made is that DeltaS at the onset of magnetic order is significantly largerfor the Tb compound than that observed for the Gd analogue near its T<missing VAR>N.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[208.0, 1.8, 'K', 4],[146.0, 46, 'K', 3],[136.0, 21, 'K', 3],[125.0, 32, 'and', 3],[124.0, 28, 'K', 3],[91.0, 4, 'f', 1]

Tb
###Competing magnetic interactions and magnetoresistance anomalies in cubic intermetallic compounds, Gd4RhAl and Tb4RhAl, and enhanced magnetocaloric effect for the Tb case|Ram Kumar,Kartik K Iyer,P. L. Paulose,E. V. Sampathkumaran###
(1703607, 1703607)
 An intriguing findingwe made is that DeltaS at the onset of magnetic order is significantly largerfor the Tb compound than that observed for the Gd analogue near its T<missing VAR>N.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[233.0, 1.8, 'K', 4],[171.0, 46, 'K', 3],[161.0, 21, 'K', 3],[150.0, 32, 'and', 3],[149.0, 28, 'K', 3],[66.0, 4, 'f', 1]

Gd
###Competing magnetic interactions and magnetoresistance anomalies in cubic intermetallic compounds, Gd4RhAl and Tb4RhAl, and enhanced magnetocaloric effect for the Tb case|Ram Kumar,Kartik K Iyer,P. L. Paulose,E. V. Sampathkumaran###
(1703621, 1703621)
 An intriguing findingwe made is that DeltaS at the onset of magnetic order is significantly largerfor the Tb compound than that observed for the Gd analogue near its T<missing VAR>N.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[247.0, 1.8, 'K', 4],[185.0, 46, 'K', 3],[175.0, 21, 'K', 3],[164.0, 32, 'and', 3],[163.0, 28, 'K', 3],[52.0, 4, 'f', 1]

N
###Competing magnetic interactions and magnetoresistance anomalies in cubic intermetallic compounds, Gd4RhAl and Tb4RhAl, and enhanced magnetocaloric effect for the Tb case|Ram Kumar,Kartik K Iyer,P. L. Paulose,E. V. Sampathkumaran###
(1703630, 1703630)
 An intriguing findingwe made is that DeltaS at the onset of magnetic order is significantly largerfor the Tb compound than that observed for the Gd analogue near its T<missing VAR>N.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[256.0, 1.8, 'K', 4],[194.0, 46, 'K', 3],[184.0, 21, 'K', 3],[173.0, 32, 'and', 3],[172.0, 28, 'K', 3],[43.0, 4, 'f', 1]

Ni80Fe20
###Ni$_{80}$Fe$_{20}$ Nanotubes with Optimized Spintronic Functionalities Prepared by Atomic Layer Deposition|Maria Carmen Giordano,Simon Escobar Steinvall,Sho Watanabe,Anna Fontcuberta i Morral,Dirk Grundler###
(1703735, 1703738)
Ni80Fe20 Nanotubes with Optimized Spintronic Functionalities Prepared by Atomic Layer Deposition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[349.0, 0.013, ',', 8],[444.0, 150, 'nm', 9],[499.0, 3, 'D', 11]

Ni80Fe20
###Ni$_{80}$Fe$_{20}$ Nanotubes with Optimized Spintronic Functionalities Prepared by Atomic Layer Deposition|Maria Carmen Giordano,Simon Escobar Steinvall,Sho Watanabe,Anna Fontcuberta i Morral,Dirk Grundler###
(1703763, 1703766)
 Permalloy Ni80Fe20 is one of the key magnetic materials in thefield of magnonics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[321.0, 0.013, ',', 7],[416.0, 150, 'nm', 8],[471.0, 3, 'D', 10]

Ni80Fe20
###Ni$_{80}$Fe$_{20}$ Nanotubes with Optimized Spintronic Functionalities Prepared by Atomic Layer Deposition|Maria Carmen Giordano,Simon Escobar Steinvall,Sho Watanabe,Anna Fontcuberta i Morral,Dirk Grundler###
(1703969, 1703972)
 We reportplasma-enhanced ALD to prepare permalloy Ni80Fe20 thin films andnanotubes using nickelocene and iron(III) tert-butoxide as metal precursors,water as the oxidant agent and an in-cycle plasma enhanced reduction step withhydrogen.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 0.013, ',', 2],[210.0, 150, 'nm', 3],[265.0, 3, 'D', 5]

(III)
###Ni$_{80}$Fe$_{20}$ Nanotubes with Optimized Spintronic Functionalities Prepared by Atomic Layer Deposition|Maria Carmen Giordano,Simon Escobar Steinvall,Sho Watanabe,Anna Fontcuberta i Morral,Dirk Grundler###
(1703990, 1703994)
 We reportplasma-enhanced ALD to prepare permalloy Ni80Fe20 thin films andnanotubes using nickelocene and iron(III) tert-butoxide as metal precursors,water as the oxidant agent and an in-cycle plasma enhanced reduction step withhydrogen.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 0.013, ',', 2],[188.0, 150, 'nm', 3],[243.0, 3, 'D', 5]

NiFe
###Ni$_{80}$Fe$_{20}$ Nanotubes with Optimized Spintronic Functionalities Prepared by Atomic Layer Deposition|Maria Carmen Giordano,Simon Escobar Steinvall,Sho Watanabe,Anna Fontcuberta i Morral,Dirk Grundler###
(1704060, 1704061)
 We have optimized the ALD cycle in terms of NiFe atomic ratio andfunctional properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 0.013, ',', 1],[121.0, 150, 'nm', 2],[176.0, 3, 'D', 4]

GaAs
###Ni$_{80}$Fe$_{20}$ Nanotubes with Optimized Spintronic Functionalities Prepared by Atomic Layer Deposition|Maria Carmen Giordano,Simon Escobar Steinvall,Sho Watanabe,Anna Fontcuberta i Morral,Dirk Grundler###
(1704152, 1704153)
 We demonstrate that the process also works forcovering GaAs nanowires, resulting in permalloy nanotubes with high aspectratios and diameters of about 150 nm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 0.013, ',', 1],[29.0, 150, 'nm', 0],[84.0, 3, 'D', 2]

NiFe
###Ni$_{80}$Fe$_{20}$ Nanotubes with Optimized Spintronic Functionalities Prepared by Atomic Layer Deposition|Maria Carmen Giordano,Simon Escobar Steinvall,Sho Watanabe,Anna Fontcuberta i Morral,Dirk Grundler###
(1704233, 1704234)
 Our results enable NiFe-based 3D spintronics andmagnonic devices in curved and complex topology operated in the G<missing VAR>Hz frequencyregime.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 0.013, ',', 3],[51.0, 150, 'nm', 2],[3.0, 3, 'D', 0]

IrMn3
###Observation of current-induced switching in non-collinear antiferromagnetic IrMn$_3$ by differential voltage measurements|Sevdenur Arpaci,Victor Lopez-Dominguez,Jiacheng Shi,Luis Sánchez-Tejerina,Francesca Garesci,Chulin Wang,Xueting Yan,Vinod K. Sangwan,Matthew Grayson,Mark C. Hersam,Giovanni Finocchio,Pedram Khalili Amiri###
(1704299, 1704301)
Observation of current-induced switching in non-collinear antiferromagnetic IrMn3 by differential voltage measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Observation of current-induced switching in non-collinear antiferromagnetic IrMn$_3$ by differential voltage measurements|Sevdenur Arpaci,Victor Lopez-Dominguez,Jiacheng Shi,Luis Sánchez-Tejerina,Francesca Garesci,Chulin Wang,Xueting Yan,Vinod K. Sangwan,Matthew Grayson,Mark C. Hersam,Giovanni Finocchio,Pedram Khalili Amiri###
(1704335, 1704335)
 There is accelerating interest in developing memory devices usingantiferromagnetic (AFM) materials, motivated by the possibility forelectrically controlling AFM<missing VAR> order via spin-orbit torques, and its read-out viamagnetoresistive effects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Observation of current-induced switching in non-collinear antiferromagnetic IrMn$_3$ by differential voltage measurements|Sevdenur Arpaci,Victor Lopez-Dominguez,Jiacheng Shi,Luis Sánchez-Tejerina,Francesca Garesci,Chulin Wang,Xueting Yan,Vinod K. Sangwan,Matthew Grayson,Mark C. Hersam,Giovanni Finocchio,Pedram Khalili Amiri###
(1704358, 1704358)
 There is accelerating interest in developing memory devices usingantiferromagnetic (AFM) materials, motivated by the possibility forelectrically controlling AFM<missing VAR> order via spin-orbit torques, and its read-out viamagnetoresistive effects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Observation of current-induced switching in non-collinear antiferromagnetic IrMn$_3$ by differential voltage measurements|Sevdenur Arpaci,Victor Lopez-Dominguez,Jiacheng Shi,Luis Sánchez-Tejerina,Francesca Garesci,Chulin Wang,Xueting Yan,Vinod K. Sangwan,Matthew Grayson,Mark C. Hersam,Giovanni Finocchio,Pedram Khalili Amiri###
(1704429, 1704429)
 Recent studies have shown, however, that high currentdensities create non-magnetic contributions to resistive switching signals inAFM<missing VAR>/heavy metal (AFM<missing VAR>/HM) bilayers, complicating their interpretation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Observation of current-induced switching in non-collinear antiferromagnetic IrMn$_3$ by differential voltage measurements|Sevdenur Arpaci,Victor Lopez-Dominguez,Jiacheng Shi,Luis Sánchez-Tejerina,Francesca Garesci,Chulin Wang,Xueting Yan,Vinod K. Sangwan,Matthew Grayson,Mark C. Hersam,Giovanni Finocchio,Pedram Khalili Amiri###
(1704438, 1704438)
 Recent studies have shown, however, that high currentdensities create non-magnetic contributions to resistive switching signals inAFM<missing VAR>/heavy metal (AFM<missing VAR>/HM) bilayers, complicating their interpretation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Observation of current-induced switching in non-collinear antiferromagnetic IrMn$_3$ by differential voltage measurements|Sevdenur Arpaci,Victor Lopez-Dominguez,Jiacheng Shi,Luis Sánchez-Tejerina,Francesca Garesci,Chulin Wang,Xueting Yan,Vinod K. Sangwan,Matthew Grayson,Mark C. Hersam,Giovanni Finocchio,Pedram Khalili Amiri###
(1704441, 1704441)
 Recent studies have shown, however, that high currentdensities create non-magnetic contributions to resistive switching signals inAFM<missing VAR>/heavy metal (AFM<missing VAR>/HM) bilayers, complicating their interpretation.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Observation of current-induced switching in non-collinear antiferromagnetic IrMn$_3$ by differential voltage measurements|Sevdenur Arpaci,Victor Lopez-Dominguez,Jiacheng Shi,Luis Sánchez-Tejerina,Francesca Garesci,Chulin Wang,Xueting Yan,Vinod K. Sangwan,Matthew Grayson,Mark C. Hersam,Giovanni Finocchio,Pedram Khalili Amiri###
(1704492, 1704492)
 Here weintroduce an experimental protocol to unambiguously distinguish current-inducedmagnetic and nonmagnetic switching signals in AFM<missing VAR>/HM<missing VAR> structures, anddemonstrate it in IrMn3/Pt devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Observation of current-induced switching in non-collinear antiferromagnetic IrMn$_3$ by differential voltage measurements|Sevdenur Arpaci,Victor Lopez-Dominguez,Jiacheng Shi,Luis Sánchez-Tejerina,Francesca Garesci,Chulin Wang,Xueting Yan,Vinod K. Sangwan,Matthew Grayson,Mark C. Hersam,Giovanni Finocchio,Pedram Khalili Amiri###
(1704495, 1704495)
 Here weintroduce an experimental protocol to unambiguously distinguish current-inducedmagnetic and nonmagnetic switching signals in AFM<missing VAR>/HM<missing VAR> structures, anddemonstrate it in IrMn3/Pt devices.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

IrMn3/Pt
###Observation of current-induced switching in non-collinear antiferromagnetic IrMn$_3$ by differential voltage measurements|Sevdenur Arpaci,Victor Lopez-Dominguez,Jiacheng Shi,Luis Sánchez-Tejerina,Francesca Garesci,Chulin Wang,Xueting Yan,Vinod K. Sangwan,Matthew Grayson,Mark C. Hersam,Giovanni Finocchio,Pedram Khalili Amiri###
(1704510, 1704514)
 Here weintroduce an experimental protocol to unambiguously distinguish current-inducedmagnetic and nonmagnetic switching signals in AFM<missing VAR>/HM<missing VAR> structures, anddemonstrate it in IrMn3/Pt devices.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

IrMn3
###Observation of current-induced switching in non-collinear antiferromagnetic IrMn$_3$ by differential voltage measurements|Sevdenur Arpaci,Victor Lopez-Dominguez,Jiacheng Shi,Luis Sánchez-Tejerina,Francesca Garesci,Chulin Wang,Xueting Yan,Vinod K. Sangwan,Matthew Grayson,Mark C. Hersam,Giovanni Finocchio,Pedram Khalili Amiri###
(1704541, 1704543)
 A six-terminal double-cross device isconstructed, with an IrMn3 pillar placed on one cross.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

IrMn3
###Observation of current-induced switching in non-collinear antiferromagnetic IrMn$_3$ by differential voltage measurements|Sevdenur Arpaci,Victor Lopez-Dominguez,Jiacheng Shi,Luis Sánchez-Tejerina,Francesca Garesci,Chulin Wang,Xueting Yan,Vinod K. Sangwan,Matthew Grayson,Mark C. Hersam,Giovanni Finocchio,Pedram Khalili Amiri###
(1704581, 1704583)
 The differentialvoltage is measured between the two crosses with and without IrMn3 aftereach switching attempt.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

IrMn3
###Observation of current-induced switching in non-collinear antiferromagnetic IrMn$_3$ by differential voltage measurements|Sevdenur Arpaci,Victor Lopez-Dominguez,Jiacheng Shi,Luis Sánchez-Tejerina,Francesca Garesci,Chulin Wang,Xueting Yan,Vinod K. Sangwan,Matthew Grayson,Mark C. Hersam,Giovanni Finocchio,Pedram Khalili Amiri###
(1704640, 1704642)
 For a wide range of current densities, reversibleswitching is observed only when write currents pass through the cross with theIrMn3 pillar, eliminating any possibility of non-magnetic switchingartifacts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

IrTe4
###Observation of nearly identical superconducting transition temperatures in pressurized Weyl semimetal MIrTe4 (M=Nb and Ta)|Sijin Long,Shu Cai,Rico Schonemann,Priscila F. S. Rosa,Luis Balicas,Cheng Huang,Jing Guo,Yazhou Zhou,Jinyu Han,Liqin Zhou,Yanchun Li,Xiaodong Li,Qi Wu,Hongming Weng,Tao Xiang,Liling Sun###
(1704723, 1704725)
Observation of nearly identical superconducting transition temperatures in pressurized Weyl semimetal M<missing VAR>IrTe4 (M<missing VAR>Nb and Ta).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[266.0, 27, 'GPa', 4],[296.0, 40, 'GPa', 4]

Nb
###Observation of nearly identical superconducting transition temperatures in pressurized Weyl semimetal MIrTe4 (M=Nb and Ta)|Sijin Long,Shu Cai,Rico Schonemann,Priscila F. S. Rosa,Luis Balicas,Cheng Huang,Jing Guo,Yazhou Zhou,Jinyu Han,Liqin Zhou,Yanchun Li,Xiaodong Li,Qi Wu,Hongming Weng,Tao Xiang,Liling Sun###
(1704729, 1704729)
Observation of nearly identical superconducting transition temperatures in pressurized Weyl semimetal M<missing VAR>IrTe4 (M<missing VAR>Nb and Ta).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[262.0, 27, 'GPa', 4],[292.0, 40, 'GPa', 4]

Ta
###Observation of nearly identical superconducting transition temperatures in pressurized Weyl semimetal MIrTe4 (M=Nb and Ta)|Sijin Long,Shu Cai,Rico Schonemann,Priscila F. S. Rosa,Luis Balicas,Cheng Huang,Jing Guo,Yazhou Zhou,Jinyu Han,Liqin Zhou,Yanchun Li,Xiaodong Li,Qi Wu,Hongming Weng,Tao Xiang,Liling Sun###
(1704733, 1704733)
Observation of nearly identical superconducting transition temperatures in pressurized Weyl semimetal M<missing VAR>IrTe4 (M<missing VAR>Nb and Ta).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[258.0, 27, 'GPa', 4],[288.0, 40, 'GPa', 4]

II
###Observation of nearly identical superconducting transition temperatures in pressurized Weyl semimetal MIrTe4 (M=Nb and Ta)|Sijin Long,Shu Cai,Rico Schonemann,Priscila F. S. Rosa,Luis Balicas,Cheng Huang,Jing Guo,Yazhou Zhou,Jinyu Han,Liqin Zhou,Yanchun Li,Xiaodong Li,Qi Wu,Hongming Weng,Tao Xiang,Liling Sun###
(1704760, 1704761)
 Here we report the observation of pressure-induced superconductivity intype-II Weyl semimetal (WSM) candidate NbIrTe4 and the evolution of its Hallcoefficient (R<missing VAR>H), magnetoresistance (MR), and lattice with increasing pressureto 57 G<missing VAR>Pa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[230.0, 27, 'GPa', 3],[260.0, 40, 'GPa', 3]

WS
###Observation of nearly identical superconducting transition temperatures in pressurized Weyl semimetal MIrTe4 (M=Nb and Ta)|Sijin Long,Shu Cai,Rico Schonemann,Priscila F. S. Rosa,Luis Balicas,Cheng Huang,Jing Guo,Yazhou Zhou,Jinyu Han,Liqin Zhou,Yanchun Li,Xiaodong Li,Qi Wu,Hongming Weng,Tao Xiang,Liling Sun###
(1704768, 1704769)
 Here we report the observation of pressure-induced superconductivity intype-II Weyl semimetal (WSM) candidate NbIrTe4 and the evolution of its Hallcoefficient (R<missing VAR>H), magnetoresistance (MR), and lattice with increasing pressureto 57 G<missing VAR>Pa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[222.0, 27, 'GPa', 3],[252.0, 40, 'GPa', 3]

NbIrTe4
###Observation of nearly identical superconducting transition temperatures in pressurized Weyl semimetal MIrTe4 (M=Nb and Ta)|Sijin Long,Shu Cai,Rico Schonemann,Priscila F. S. Rosa,Luis Balicas,Cheng Huang,Jing Guo,Yazhou Zhou,Jinyu Han,Liqin Zhou,Yanchun Li,Xiaodong Li,Qi Wu,Hongming Weng,Tao Xiang,Liling Sun###
(1704775, 1704778)
 Here we report the observation of pressure-induced superconductivity intype-II Weyl semimetal (WSM) candidate NbIrTe4 and the evolution of its Hallcoefficient (R<missing VAR>H), magnetoresistance (MR), and lattice with increasing pressureto 57 G<missing VAR>Pa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[213.0, 27, 'GPa', 3],[243.0, 40, 'GPa', 3]

H
###Observation of nearly identical superconducting transition temperatures in pressurized Weyl semimetal MIrTe4 (M=Nb and Ta)|Sijin Long,Shu Cai,Rico Schonemann,Priscila F. S. Rosa,Luis Balicas,Cheng Huang,Jing Guo,Yazhou Zhou,Jinyu Han,Liqin Zhou,Yanchun Li,Xiaodong Li,Qi Wu,Hongming Weng,Tao Xiang,Liling Sun###
(1704797, 1704797)
 Here we report the observation of pressure-induced superconductivity intype-II Weyl semimetal (WSM) candidate NbIrTe4 and the evolution of its Hallcoefficient (R<missing VAR>H), magnetoresistance (MR), and lattice with increasing pressureto 57 G<missing VAR>Pa.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[194.0, 27, 'GPa', 3],[224.0, 40, 'GPa', 3]

Pa
###Observation of nearly identical superconducting transition temperatures in pressurized Weyl semimetal MIrTe4 (M=Nb and Ta)|Sijin Long,Shu Cai,Rico Schonemann,Priscila F. S. Rosa,Luis Balicas,Cheng Huang,Jing Guo,Yazhou Zhou,Jinyu Han,Liqin Zhou,Yanchun Li,Xiaodong Li,Qi Wu,Hongming Weng,Tao Xiang,Liling Sun###
(1704825, 1704825)
 Here we report the observation of pressure-induced superconductivity intype-II Weyl semimetal (WSM) candidate NbIrTe4 and the evolution of its Hallcoefficient (R<missing VAR>H), magnetoresistance (MR), and lattice with increasing pressureto 57 G<missing VAR>Pa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 27, 'GPa', 3],[196.0, 40, 'GPa', 3]

WS
###Observation of nearly identical superconducting transition temperatures in pressurized Weyl semimetal MIrTe4 (M=Nb and Ta)|Sijin Long,Shu Cai,Rico Schonemann,Priscila F. S. Rosa,Luis Balicas,Cheng Huang,Jing Guo,Yazhou Zhou,Jinyu Han,Liqin Zhou,Yanchun Li,Xiaodong Li,Qi Wu,Hongming Weng,Tao Xiang,Liling Sun###
(1704859, 1704860)
 These results provide a significant opportunity to investigate theuniversal high-pressure behavior of ternary WSMs, including the sister compoundTaIrTe4 that has been known through our previous studies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 27, 'GPa', 2],[161.0, 40, 'GPa', 2]

TaIrTe4
###Observation of nearly identical superconducting transition temperatures in pressurized Weyl semimetal MIrTe4 (M=Nb and Ta)|Sijin Long,Shu Cai,Rico Schonemann,Priscila F. S. Rosa,Luis Balicas,Cheng Huang,Jing Guo,Yazhou Zhou,Jinyu Han,Liqin Zhou,Yanchun Li,Xiaodong Li,Qi Wu,Hongming Weng,Tao Xiang,Liling Sun###
(1704873, 1704876)
 These results provide a significant opportunity to investigate theuniversal high-pressure behavior of ternary WSMs, including the sister compoundTaIrTe4 that has been known through our previous studies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 27, 'GPa', 2],[145.0, 40, 'GPa', 2]

WS
###Observation of nearly identical superconducting transition temperatures in pressurized Weyl semimetal MIrTe4 (M=Nb and Ta)|Sijin Long,Shu Cai,Rico Schonemann,Priscila F. S. Rosa,Luis Balicas,Cheng Huang,Jing Guo,Yazhou Zhou,Jinyu Han,Liqin Zhou,Yanchun Li,Xiaodong Li,Qi Wu,Hongming Weng,Tao Xiang,Liling Sun###
(1704914, 1704915)
 We find that thepressure-tuned evolution from the WSM<missing VAR> to the superconducting (SC) state inthese two compounds exhibit the same trend, i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 27, 'GPa', 1],[106.0, 40, 'GPa', 1]

(SC)
###Observation of nearly identical superconducting transition temperatures in pressurized Weyl semimetal MIrTe4 (M=Nb and Ta)|Sijin Long,Shu Cai,Rico Schonemann,Priscila F. S. Rosa,Luis Balicas,Cheng Huang,Jing Guo,Yazhou Zhou,Jinyu Han,Liqin Zhou,Yanchun Li,Xiaodong Li,Qi Wu,Hongming Weng,Tao Xiang,Liling Sun###
(1704924, 1704927)
 We find that thepressure-tuned evolution from the WSM<missing VAR> to the superconducting (SC) state inthese two compounds exhibit the same trend, i.e.
Featurization successful!
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 27, 'GPa', 1],[94.0, 40, 'GPa', 1]

SC
###Observation of nearly identical superconducting transition temperatures in pressurized Weyl semimetal MIrTe4 (M=Nb and Ta)|Sijin Long,Shu Cai,Rico Schonemann,Priscila F. S. Rosa,Luis Balicas,Cheng Huang,Jing Guo,Yazhou Zhou,Jinyu Han,Liqin Zhou,Yanchun Li,Xiaodong Li,Qi Wu,Hongming Weng,Tao Xiang,Liling Sun###
(1704961, 1704962)
, a pressure-induced SC stateemerges from the matrix of the non-superconducting WSM<missing VAR> state at  27 GPa, andthen the WSM<missing VAR> state and the SC state coexist up to 40 GPa.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 27, 'GPa', 0],[59.0, 40, 'GPa', 0]

WS
###Observation of nearly identical superconducting transition temperatures in pressurized Weyl semimetal MIrTe4 (M=Nb and Ta)|Sijin Long,Shu Cai,Rico Schonemann,Priscila F. S. Rosa,Luis Balicas,Cheng Huang,Jing Guo,Yazhou Zhou,Jinyu Han,Liqin Zhou,Yanchun Li,Xiaodong Li,Qi Wu,Hongming Weng,Tao Xiang,Liling Sun###
(1704983, 1704984)
, a pressure-induced SC stateemerges from the matrix of the non-superconducting WSM<missing VAR> state at  27 GPa, andthen the WSM<missing VAR> state and the SC state coexist up to 40 GPa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 27, 'GPa', 0],[37.0, 40, 'GPa', 0]

WS
###Observation of nearly identical superconducting transition temperatures in pressurized Weyl semimetal MIrTe4 (M=Nb and Ta)|Sijin Long,Shu Cai,Rico Schonemann,Priscila F. S. Rosa,Luis Balicas,Cheng Huang,Jing Guo,Yazhou Zhou,Jinyu Han,Liqin Zhou,Yanchun Li,Xiaodong Li,Qi Wu,Hongming Weng,Tao Xiang,Liling Sun###
(1705001, 1705002)
, a pressure-induced SC stateemerges from the matrix of the non-superconducting WSM<missing VAR> state at  27 GPa, andthen the WSM<missing VAR> state and the SC state coexist up to 40 GPa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 27, 'GPa', 0],[19.0, 40, 'GPa', 0]

SC
###Observation of nearly identical superconducting transition temperatures in pressurized Weyl semimetal MIrTe4 (M=Nb and Ta)|Sijin Long,Shu Cai,Rico Schonemann,Priscila F. S. Rosa,Luis Balicas,Cheng Huang,Jing Guo,Yazhou Zhou,Jinyu Han,Liqin Zhou,Yanchun Li,Xiaodong Li,Qi Wu,Hongming Weng,Tao Xiang,Liling Sun###
(1705011, 1705012)
, a pressure-induced SC stateemerges from the matrix of the non-superconducting WSM<missing VAR> state at  27 GPa, andthen the WSM<missing VAR> state and the SC state coexist up to 40 GPa.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 27, 'GPa', 0],[9.0, 40, 'GPa', 0]

H
###Observation of nearly identical superconducting transition temperatures in pressurized Weyl semimetal MIrTe4 (M=Nb and Ta)|Sijin Long,Shu Cai,Rico Schonemann,Priscila F. S. Rosa,Luis Balicas,Cheng Huang,Jing Guo,Yazhou Zhou,Jinyu Han,Liqin Zhou,Yanchun Li,Xiaodong Li,Qi Wu,Hongming Weng,Tao Xiang,Liling Sun###
(1705059, 1705059)
 Above this pressure,an identical high-pressure behavior, characterized by almost the same value ofR<missing VAR>H and MR in its normal state and the same value of Tc in its SC state, appearsin both compounds.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 27, 'GPa', 1],[38.0, 40, 'GPa', 1]

Tc
###Observation of nearly identical superconducting transition temperatures in pressurized Weyl semimetal MIrTe4 (M=Nb and Ta)|Sijin Long,Shu Cai,Rico Schonemann,Priscila F. S. Rosa,Luis Balicas,Cheng Huang,Jing Guo,Yazhou Zhou,Jinyu Han,Liqin Zhou,Yanchun Li,Xiaodong Li,Qi Wu,Hongming Weng,Tao Xiang,Liling Sun###
(1705084, 1705084)
 Above this pressure,an identical high-pressure behavior, characterized by almost the same value ofR<missing VAR>H and MR in its normal state and the same value of Tc in its SC state, appearsin both compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 27, 'GPa', 1],[63.0, 40, 'GPa', 1]

SC
###Observation of nearly identical superconducting transition temperatures in pressurized Weyl semimetal MIrTe4 (M=Nb and Ta)|Sijin Long,Shu Cai,Rico Schonemann,Priscila F. S. Rosa,Luis Balicas,Cheng Huang,Jing Guo,Yazhou Zhou,Jinyu Han,Liqin Zhou,Yanchun Li,Xiaodong Li,Qi Wu,Hongming Weng,Tao Xiang,Liling Sun###
(1705090, 1705091)
 Above this pressure,an identical high-pressure behavior, characterized by almost the same value ofR<missing VAR>H and MR in its normal state and the same value of Tc in its SC state, appearsin both compounds.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 27, 'GPa', 1],[69.0, 40, 'GPa', 1]

WS
###Observation of nearly identical superconducting transition temperatures in pressurized Weyl semimetal MIrTe4 (M=Nb and Ta)|Sijin Long,Shu Cai,Rico Schonemann,Priscila F. S. Rosa,Luis Balicas,Cheng Huang,Jing Guo,Yazhou Zhou,Jinyu Han,Liqin Zhou,Yanchun Li,Xiaodong Li,Qi Wu,Hongming Weng,Tao Xiang,Liling Sun###
(1705127, 1705128)
 Our results not only reveal a universal connection betweenthe WSM<missing VAR> state and SC state, but also demonstrate that NbIrTe4 and TaIrTe4 canmake the same contribution to the normal and SC states that inhabit in thehigh-pressure phase, although these two compounds have dramatically differenttopological band structure at ambient pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 27, 'GPa', 2],[106.0, 40, 'GPa', 2]

SC
###Observation of nearly identical superconducting transition temperatures in pressurized Weyl semimetal MIrTe4 (M=Nb and Ta)|Sijin Long,Shu Cai,Rico Schonemann,Priscila F. S. Rosa,Luis Balicas,Cheng Huang,Jing Guo,Yazhou Zhou,Jinyu Han,Liqin Zhou,Yanchun Li,Xiaodong Li,Qi Wu,Hongming Weng,Tao Xiang,Liling Sun###
(1705135, 1705136)
 Our results not only reveal a universal connection betweenthe WSM<missing VAR> state and SC state, but also demonstrate that NbIrTe4 and TaIrTe4 canmake the same contribution to the normal and SC states that inhabit in thehigh-pressure phase, although these two compounds have dramatically differenttopological band structure at ambient pressure.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 27, 'GPa', 2],[114.0, 40, 'GPa', 2]

NbIrTe4
###Observation of nearly identical superconducting transition temperatures in pressurized Weyl semimetal MIrTe4 (M=Nb and Ta)|Sijin Long,Shu Cai,Rico Schonemann,Priscila F. S. Rosa,Luis Balicas,Cheng Huang,Jing Guo,Yazhou Zhou,Jinyu Han,Liqin Zhou,Yanchun Li,Xiaodong Li,Qi Wu,Hongming Weng,Tao Xiang,Liling Sun###
(1705149, 1705152)
 Our results not only reveal a universal connection betweenthe WSM<missing VAR> state and SC state, but also demonstrate that NbIrTe4 and TaIrTe4 canmake the same contribution to the normal and SC states that inhabit in thehigh-pressure phase, although these two compounds have dramatically differenttopological band structure at ambient pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 27, 'GPa', 2],[128.0, 40, 'GPa', 2]

TaIrTe4
###Observation of nearly identical superconducting transition temperatures in pressurized Weyl semimetal MIrTe4 (M=Nb and Ta)|Sijin Long,Shu Cai,Rico Schonemann,Priscila F. S. Rosa,Luis Balicas,Cheng Huang,Jing Guo,Yazhou Zhou,Jinyu Han,Liqin Zhou,Yanchun Li,Xiaodong Li,Qi Wu,Hongming Weng,Tao Xiang,Liling Sun###
(1705156, 1705159)
 Our results not only reveal a universal connection betweenthe WSM<missing VAR> state and SC state, but also demonstrate that NbIrTe4 and TaIrTe4 canmake the same contribution to the normal and SC states that inhabit in thehigh-pressure phase, although these two compounds have dramatically differenttopological band structure at ambient pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 27, 'GPa', 2],[135.0, 40, 'GPa', 2]

SC
###Observation of nearly identical superconducting transition temperatures in pressurized Weyl semimetal MIrTe4 (M=Nb and Ta)|Sijin Long,Shu Cai,Rico Schonemann,Priscila F. S. Rosa,Luis Balicas,Cheng Huang,Jing Guo,Yazhou Zhou,Jinyu Han,Liqin Zhou,Yanchun Li,Xiaodong Li,Qi Wu,Hongming Weng,Tao Xiang,Liling Sun###
(1705180, 1705181)
 Our results not only reveal a universal connection betweenthe WSM<missing VAR> state and SC state, but also demonstrate that NbIrTe4 and TaIrTe4 canmake the same contribution to the normal and SC states that inhabit in thehigh-pressure phase, although these two compounds have dramatically differenttopological band structure at ambient pressure.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[189.0, 27, 'GPa', 2],[159.0, 40, 'GPa', 2]

ReO2
###Extremely large magnetoresistance in the hourglass Dirac loop chain metal β-ReO$_{2}$|Daigorou Hirai,Takahito Anbai,Shinya Uji,Tamio Oguchi,Zenji Hiroi###
(1705258, 1705260)
Extremely large magnetoresistance in the hourglass Dirac loop chain metal -ReO2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 22, ',', 2],[82.0, 10, 'T', 2],[85.0, 2, 'K', 2],[260.0, 8, ',', 10]

ReO2
###Extremely large magnetoresistance in the hourglass Dirac loop chain metal β-ReO$_{2}$|Daigorou Hirai,Takahito Anbai,Shinya Uji,Tamio Oguchi,Zenji Hiroi###
(1705277, 1705279)
 The transport and thermodynamic properties of beta-ReO2 crystallizingin a nonsymmorphic structure were studied using high-quality single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 22, ',', 1],[63.0, 10, 'T', 1],[66.0, 2, 'K', 1],[241.0, 8, ',', 9]

ReO2
###Extremely large magnetoresistance in the hourglass Dirac loop chain metal β-ReO$_{2}$|Daigorou Hirai,Takahito Anbai,Shinya Uji,Tamio Oguchi,Zenji Hiroi###
(1705386, 1705388)
 However, distinguished from othertopological semimetals with low carrier densities that show XMR,beta-ReO2 has a high electron carrier density of 1 times 1022cm-3 as determined by Hall measurements and large Fermi surfaces in theelectronic structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 22, ',', 1],[44.0, 10, 'T', 1],[41.0, 2, 'K', 1],[132.0, 8, ',', 7]

In
###Extremely large magnetoresistance in the hourglass Dirac loop chain metal β-ReO$_{2}$|Daigorou Hirai,Takahito Anbai,Shinya Uji,Tamio Oguchi,Zenji Hiroi###
(1705444, 1705444)
 In addition, a small Fermi surface with a small effectivemass was evidenced by de Haas-van Alphen oscillation measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 22, ',', 2],[102.0, 10, 'T', 2],[99.0, 2, 'K', 2],[76.0, 8, ',', 6]

S
###Extremely large magnetoresistance in the hourglass Dirac loop chain metal β-ReO$_{2}$|Daigorou Hirai,Takahito Anbai,Shinya Uji,Tamio Oguchi,Zenji Hiroi###
(1705499, 1705499)
 The previousband structure calculations [S.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 22, ',', 3],[157.0, 10, 'T', 3],[154.0, 2, 'K', 3],[21.0, 8, ',', 5]

S
###Extremely large magnetoresistance in the hourglass Dirac loop chain metal β-ReO$_{2}$|Daigorou Hirai,Takahito Anbai,Shinya Uji,Tamio Oguchi,Zenji Hiroi###
(1705502, 1705502)
 S.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 22, ',', 4],[160.0, 10, 'T', 4],[157.0, 2, 'K', 4],[18.0, 8, ',', 4]

C
###Extremely large magnetoresistance in the hourglass Dirac loop chain metal β-ReO$_{2}$|Daigorou Hirai,Takahito Anbai,Shinya Uji,Tamio Oguchi,Zenji Hiroi###
(1705609, 1705609)
 8, 1844 (2017)]showed that two kinds of loops made of Dirac points of hourglass-shapeddispersions exist and are connected to each other by a point to form a stringof alternating loops, called the Dirac loop chain (DLC), which are protected bythe multiple glide symmetries.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[285.0, 22, ',', 8],[267.0, 10, 'T', 8],[264.0, 2, 'K', 8],[89.0, 8, ',', 0]

C
###Extremely large magnetoresistance in the hourglass Dirac loop chain metal β-ReO$_{2}$|Daigorou Hirai,Takahito Anbai,Shinya Uji,Tamio Oguchi,Zenji Hiroi###
(1705688, 1705688)
 Our first-principles calculations revealed thecomplex Fermi surfaces with the smallest one corresponding to the observedsmall Fermi surface, which is just located near the DLC.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[364.0, 22, ',', 9],[346.0, 10, 'T', 9],[343.0, 2, 'K', 9],[168.0, 8, ',', 1]

ReO2
###Extremely large magnetoresistance in the hourglass Dirac loop chain metal β-ReO$_{2}$|Daigorou Hirai,Takahito Anbai,Shinya Uji,Tamio Oguchi,Zenji Hiroi###
(1705702, 1705704)
 The XMR ofbeta-ReO2 is attributed to the small Fermi surface and thus is likelycaused by the DLC.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[378.0, 22, ',', 10],[360.0, 10, 'T', 10],[357.0, 2, 'K', 10],[182.0, 8, ',', 2]

C
###Extremely large magnetoresistance in the hourglass Dirac loop chain metal β-ReO$_{2}$|Daigorou Hirai,Takahito Anbai,Shinya Uji,Tamio Oguchi,Zenji Hiroi###
(1705737, 1705737)
 The XMR ofbeta-ReO2 is attributed to the small Fermi surface and thus is likelycaused by the DLC.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[413.0, 22, ',', 10],[395.0, 10, 'T', 10],[392.0, 2, 'K', 10],[217.0, 8, ',', 2]

W
###Quantum-well tunneling anisotropic magnetoresistance above room temperature|Muftah Al-Mahdawi,Qingyi Xiang,Yoshio Miura,Mohamed Belmoubarik,Keisuke Masuda,Shinya Kasai,Hiroaki Sukegawa,Seiji Mitani###
(1705771, 1705771)
 Quantum-well (Q<missing VAR>W) devices have been extensively investigated in semiconductorstructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[345.0, 5, 'K', 5]

In
###Quantum-well tunneling anisotropic magnetoresistance above room temperature|Muftah Al-Mahdawi,Qingyi Xiang,Yoshio Miura,Mohamed Belmoubarik,Keisuke Masuda,Shinya Kasai,Hiroaki Sukegawa,Seiji Mitani###
(1705824, 1705824)
 In this work, we demonstrate the spin-based control ofthe quantized states in iron 3d<missing VAR>-band Q<missing VAR>Ws, as observed in experiments andtheoretical calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[292.0, 5, 'K', 3]

Fe
###Quantum-well tunneling anisotropic magnetoresistance above room temperature|Muftah Al-Mahdawi,Qingyi Xiang,Yoshio Miura,Mohamed Belmoubarik,Keisuke Masuda,Shinya Kasai,Hiroaki Sukegawa,Seiji Mitani###
(1705897, 1705897)
 We find that the magnetization rotation in the Fe Q<missing VAR>Wssignificantly shifts the Q<missing VAR>W quantization levels, which modulate theresonant-tunneling current in MTJs, resulting in a tunneling anisotropicmagnetoresistance (TAMR) effect of Q<missing VAR>Ws.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[219.0, 5, 'K', 2]

W
###Quantum-well tunneling anisotropic magnetoresistance above room temperature|Muftah Al-Mahdawi,Qingyi Xiang,Yoshio Miura,Mohamed Belmoubarik,Keisuke Masuda,Shinya Kasai,Hiroaki Sukegawa,Seiji Mitani###
(1705910, 1705910)
 We find that the magnetization rotation in the Fe Q<missing VAR>Wssignificantly shifts the Q<missing VAR>W quantization levels, which modulate theresonant-tunneling current in MTJs, resulting in a tunneling anisotropicmagnetoresistance (TAMR) effect of Q<missing VAR>Ws.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[206.0, 5, 'K', 2]

W
###Quantum-well tunneling anisotropic magnetoresistance above room temperature|Muftah Al-Mahdawi,Qingyi Xiang,Yoshio Miura,Mohamed Belmoubarik,Keisuke Masuda,Shinya Kasai,Hiroaki Sukegawa,Seiji Mitani###
(1705968, 1705968)
 This Q<missing VAR>W-TAMR effect is sizable comparedto other types of TAMR effect, and it is present above the room-temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 5, 'K', 1]

In
###Quantum-well tunneling anisotropic magnetoresistance above room temperature|Muftah Al-Mahdawi,Qingyi Xiang,Yoshio Miura,Mohamed Belmoubarik,Keisuke Masuda,Shinya Kasai,Hiroaki Sukegawa,Seiji Mitani###
(1706017, 1706017)
 Ina Q<missing VAR>W MTJ of Cr/Fe/MgAl2O4/top electrode, where the Q<missing VAR>W is formed by amismatch between Cr and Fe in the d<missing VAR> band with Delta1 symmetry, a Q<missing VAR>W-TAMRratio of up to 5.4 % was observed at 5 K, which persisted to 1.2 % even at380K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 5, 'K', 0]

W
###Quantum-well tunneling anisotropic magnetoresistance above room temperature|Muftah Al-Mahdawi,Qingyi Xiang,Yoshio Miura,Mohamed Belmoubarik,Keisuke Masuda,Shinya Kasai,Hiroaki Sukegawa,Seiji Mitani###
(1706023, 1706023)
 Ina Q<missing VAR>W MTJ of Cr/Fe/MgAl2O4/top electrode, where the Q<missing VAR>W is formed by amismatch between Cr and Fe in the d<missing VAR> band with Delta1 symmetry, a Q<missing VAR>W-TAMRratio of up to 5.4 % was observed at 5 K, which persisted to 1.2 % even at380K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 5, 'K', 0]

Cr/Fe/MgAl2O4
###Quantum-well tunneling anisotropic magnetoresistance above room temperature|Muftah Al-Mahdawi,Qingyi Xiang,Yoshio Miura,Mohamed Belmoubarik,Keisuke Masuda,Shinya Kasai,Hiroaki Sukegawa,Seiji Mitani###
(1706031, 1706039)
 Ina Q<missing VAR>W MTJ of Cr/Fe/MgAl2O4/top electrode, where the Q<missing VAR>W is formed by amismatch between Cr and Fe in the d<missing VAR> band with Delta1 symmetry, a Q<missing VAR>W-TAMRratio of up to 5.4 % was observed at 5 K, which persisted to 1.2 % even at380K.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[77.0, 5, 'K', 0]

W
###Quantum-well tunneling anisotropic magnetoresistance above room temperature|Muftah Al-Mahdawi,Qingyi Xiang,Yoshio Miura,Mohamed Belmoubarik,Keisuke Masuda,Shinya Kasai,Hiroaki Sukegawa,Seiji Mitani###
(1706051, 1706051)
 Ina Q<missing VAR>W MTJ of Cr/Fe/MgAl2O4/top electrode, where the Q<missing VAR>W is formed by amismatch between Cr and Fe in the d<missing VAR> band with Delta1 symmetry, a Q<missing VAR>W-TAMRratio of up to 5.4 % was observed at 5 K, which persisted to 1.2 % even at380K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 5, 'K', 0]

Cr
###Quantum-well tunneling anisotropic magnetoresistance above room temperature|Muftah Al-Mahdawi,Qingyi Xiang,Yoshio Miura,Mohamed Belmoubarik,Keisuke Masuda,Shinya Kasai,Hiroaki Sukegawa,Seiji Mitani###
(1706066, 1706066)
 Ina Q<missing VAR>W MTJ of Cr/Fe/MgAl2O4/top electrode, where the Q<missing VAR>W is formed by amismatch between Cr and Fe in the d<missing VAR> band with Delta1 symmetry, a Q<missing VAR>W-TAMRratio of up to 5.4 % was observed at 5 K, which persisted to 1.2 % even at380K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 5, 'K', 0]

Fe
###Quantum-well tunneling anisotropic magnetoresistance above room temperature|Muftah Al-Mahdawi,Qingyi Xiang,Yoshio Miura,Mohamed Belmoubarik,Keisuke Masuda,Shinya Kasai,Hiroaki Sukegawa,Seiji Mitani###
(1706070, 1706070)
 Ina Q<missing VAR>W MTJ of Cr/Fe/MgAl2O4/top electrode, where the Q<missing VAR>W is formed by amismatch between Cr and Fe in the d<missing VAR> band with Delta1 symmetry, a Q<missing VAR>W-TAMRratio of up to 5.4 % was observed at 5 K, which persisted to 1.2 % even at380K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 5, 'K', 0]

W
###Quantum-well tunneling anisotropic magnetoresistance above room temperature|Muftah Al-Mahdawi,Qingyi Xiang,Yoshio Miura,Mohamed Belmoubarik,Keisuke Masuda,Shinya Kasai,Hiroaki Sukegawa,Seiji Mitani###
(1706091, 1706091)
 Ina Q<missing VAR>W MTJ of Cr/Fe/MgAl2O4/top electrode, where the Q<missing VAR>W is formed by amismatch between Cr and Fe in the d<missing VAR> band with Delta1 symmetry, a Q<missing VAR>W-TAMRratio of up to 5.4 % was observed at 5 K, which persisted to 1.2 % even at380K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 5, 'K', 0]

K
###Quantum-well tunneling anisotropic magnetoresistance above room temperature|Muftah Al-Mahdawi,Qingyi Xiang,Yoshio Miura,Mohamed Belmoubarik,Keisuke Masuda,Shinya Kasai,Hiroaki Sukegawa,Seiji Mitani###
(1706135, 1706135)
 Ina Q<missing VAR>W MTJ of Cr/Fe/MgAl2O4/top electrode, where the Q<missing VAR>W is formed by amismatch between Cr and Fe in the d<missing VAR> band with Delta1 symmetry, a Q<missing VAR>W-TAMRratio of up to 5.4 % was observed at 5 K, which persisted to 1.2 % even at380K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 5, 'K', 0]

W
###Quantum-well tunneling anisotropic magnetoresistance above room temperature|Muftah Al-Mahdawi,Qingyi Xiang,Yoshio Miura,Mohamed Belmoubarik,Keisuke Masuda,Shinya Kasai,Hiroaki Sukegawa,Seiji Mitani###
(1706147, 1706147)
 The magnetic control of Q<missing VAR>W transport can open new applications forspin-coupled optoelectronic devices, ultra-thin sensors, and memories.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 5, 'K', 1]

Ta
###Layered van der Waals topological metals of TaTMTe4 (TM = Ir, Rh, Ru) family|G. Shipunov,B. R. Piening,C. Wuttke,T. A. Romanova,A. V. Sadakov,O. A. Sobolevskiy,E. Yu. Guzovsky,A. S. Usoltsev,V. M. Pudalov,D. Efremov,S. Subakti,D. Wolf,A. Lubk,B. Büchner,S. Aswartham###
(1706205, 1706205)
Layered van der Waals topological metals of TaTMTe4 (TM  Ir, Rh, Ru) family.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 0.06, ';', 2],[123.0, 0.14, ';', 2],[126.0, 0.78, ';', 2],[380.0, 0.78, ',', 9]

Te4
###Layered van der Waals topological metals of TaTMTe4 (TM = Ir, Rh, Ru) family|G. Shipunov,B. R. Piening,C. Wuttke,T. A. Romanova,A. V. Sadakov,O. A. Sobolevskiy,E. Yu. Guzovsky,A. S. Usoltsev,V. M. Pudalov,D. Efremov,S. Subakti,D. Wolf,A. Lubk,B. Büchner,S. Aswartham###
(1706208, 1706209)
Layered van der Waals topological metals of TaTMTe4 (TM  Ir, Rh, Ru) family.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 0.06, ';', 2],[119.0, 0.14, ';', 2],[122.0, 0.78, ';', 2],[376.0, 0.78, ',', 9]

Ir
###Layered van der Waals topological metals of TaTMTe4 (TM = Ir, Rh, Ru) family|G. Shipunov,B. R. Piening,C. Wuttke,T. A. Romanova,A. V. Sadakov,O. A. Sobolevskiy,E. Yu. Guzovsky,A. S. Usoltsev,V. M. Pudalov,D. Efremov,S. Subakti,D. Wolf,A. Lubk,B. Büchner,S. Aswartham###
(1706216, 1706216)
Layered van der Waals topological metals of TaTMTe4 (TM  Ir, Rh, Ru) family.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 0.06, ';', 2],[112.0, 0.14, ';', 2],[115.0, 0.78, ';', 2],[369.0, 0.78, ',', 9]

Rh
###Layered van der Waals topological metals of TaTMTe4 (TM = Ir, Rh, Ru) family|G. Shipunov,B. R. Piening,C. Wuttke,T. A. Romanova,A. V. Sadakov,O. A. Sobolevskiy,E. Yu. Guzovsky,A. S. Usoltsev,V. M. Pudalov,D. Efremov,S. Subakti,D. Wolf,A. Lubk,B. Büchner,S. Aswartham###
(1706219, 1706219)
Layered van der Waals topological metals of TaTMTe4 (TM  Ir, Rh, Ru) family.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 0.06, ';', 2],[109.0, 0.14, ';', 2],[112.0, 0.78, ';', 2],[366.0, 0.78, ',', 9]

Ru
###Layered van der Waals topological metals of TaTMTe4 (TM = Ir, Rh, Ru) family|G. Shipunov,B. R. Piening,C. Wuttke,T. A. Romanova,A. V. Sadakov,O. A. Sobolevskiy,E. Yu. Guzovsky,A. S. Usoltsev,V. M. Pudalov,D. Efremov,S. Subakti,D. Wolf,A. Lubk,B. Büchner,S. Aswartham###
(1706222, 1706222)
Layered van der Waals topological metals of TaTMTe4 (TM  Ir, Rh, Ru) family.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 0.06, ';', 2],[106.0, 0.14, ';', 2],[109.0, 0.78, ';', 2],[363.0, 0.78, ',', 9]

Ta
###Layered van der Waals topological metals of TaTMTe4 (TM = Ir, Rh, Ru) family|G. Shipunov,B. R. Piening,C. Wuttke,T. A. Romanova,A. V. Sadakov,O. A. Sobolevskiy,E. Yu. Guzovsky,A. S. Usoltsev,V. M. Pudalov,D. Efremov,S. Subakti,D. Wolf,A. Lubk,B. Büchner,S. Aswartham###
(1706242, 1706242)
 Layered vanderWaals materials of the family TaTMTe4 (TMIr, Rh, Ru) areshowing very interesting electronic properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 0.06, ';', 1],[86.0, 0.14, ';', 1],[89.0, 0.78, ';', 1],[343.0, 0.78, ',', 8]

Te4
###Layered van der Waals topological metals of TaTMTe4 (TM = Ir, Rh, Ru) family|G. Shipunov,B. R. Piening,C. Wuttke,T. A. Romanova,A. V. Sadakov,O. A. Sobolevskiy,E. Yu. Guzovsky,A. S. Usoltsev,V. M. Pudalov,D. Efremov,S. Subakti,D. Wolf,A. Lubk,B. Büchner,S. Aswartham###
(1706245, 1706246)
 Layered vanderWaals materials of the family TaTMTe4 (TMIr, Rh, Ru) areshowing very interesting electronic properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 0.06, ';', 1],[82.0, 0.14, ';', 1],[85.0, 0.78, ';', 1],[339.0, 0.78, ',', 8]

Ir
###Layered van der Waals topological metals of TaTMTe4 (TM = Ir, Rh, Ru) family|G. Shipunov,B. R. Piening,C. Wuttke,T. A. Romanova,A. V. Sadakov,O. A. Sobolevskiy,E. Yu. Guzovsky,A. S. Usoltsev,V. M. Pudalov,D. Efremov,S. Subakti,D. Wolf,A. Lubk,B. Büchner,S. Aswartham###
(1706251, 1706251)
 Layered vanderWaals materials of the family TaTMTe4 (TMIr, Rh, Ru) areshowing very interesting electronic properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 0.06, ';', 1],[77.0, 0.14, ';', 1],[80.0, 0.78, ';', 1],[334.0, 0.78, ',', 8]

Rh
###Layered van der Waals topological metals of TaTMTe4 (TM = Ir, Rh, Ru) family|G. Shipunov,B. R. Piening,C. Wuttke,T. A. Romanova,A. V. Sadakov,O. A. Sobolevskiy,E. Yu. Guzovsky,A. S. Usoltsev,V. M. Pudalov,D. Efremov,S. Subakti,D. Wolf,A. Lubk,B. Büchner,S. Aswartham###
(1706254, 1706254)
 Layered vanderWaals materials of the family TaTMTe4 (TMIr, Rh, Ru) areshowing very interesting electronic properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 0.06, ';', 1],[74.0, 0.14, ';', 1],[77.0, 0.78, ';', 1],[331.0, 0.78, ',', 8]

Ru
###Layered van der Waals topological metals of TaTMTe4 (TM = Ir, Rh, Ru) family|G. Shipunov,B. R. Piening,C. Wuttke,T. A. Romanova,A. V. Sadakov,O. A. Sobolevskiy,E. Yu. Guzovsky,A. S. Usoltsev,V. M. Pudalov,D. Efremov,S. Subakti,D. Wolf,A. Lubk,B. Büchner,S. Aswartham###
(1706257, 1706257)
 Layered vanderWaals materials of the family TaTMTe4 (TMIr, Rh, Ru) areshowing very interesting electronic properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 0.06, ';', 1],[71.0, 0.14, ';', 1],[74.0, 0.78, ';', 1],[328.0, 0.78, ',', 8]

TaIrTe4
###Layered van der Waals topological metals of TaTMTe4 (TM = Ir, Rh, Ru) family|G. Shipunov,B. R. Piening,C. Wuttke,T. A. Romanova,A. V. Sadakov,O. A. Sobolevskiy,E. Yu. Guzovsky,A. S. Usoltsev,V. M. Pudalov,D. Efremov,S. Subakti,D. Wolf,A. Lubk,B. Büchner,S. Aswartham###
(1706298, 1706301)
 Here we report the synthesis,crystal growth and structural characterization of TaIrTe4, TaRhTe4,TaIr1-xRhx<missing VAR>Te4 (x<missing VAR>  0.06; 0.14; 0.78; 0.92) andTa1x<missing VAR>Ru1-xTe4 single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 0.06, ';', 0],[27.0, 0.14, ';', 0],[30.0, 0.78, ';', 0],[284.0, 0.78, ',', 7]

TaRhTe4
###Layered van der Waals topological metals of TaTMTe4 (TM = Ir, Rh, Ru) family|G. Shipunov,B. R. Piening,C. Wuttke,T. A. Romanova,A. V. Sadakov,O. A. Sobolevskiy,E. Yu. Guzovsky,A. S. Usoltsev,V. M. Pudalov,D. Efremov,S. Subakti,D. Wolf,A. Lubk,B. Büchner,S. Aswartham###
(1706304, 1706307)
 Here we report the synthesis,crystal growth and structural characterization of TaIrTe4, TaRhTe4,TaIr1-xRhx<missing VAR>Te4 (x<missing VAR>  0.06; 0.14; 0.78; 0.92) andTa1x<missing VAR>Ru1-xTe4 single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 0.06, ';', 0],[21.0, 0.14, ';', 0],[24.0, 0.78, ';', 0],[278.0, 0.78, ',', 7]

TaIr1-xRh
###Layered van der Waals topological metals of TaTMTe4 (TM = Ir, Rh, Ru) family|G. Shipunov,B. R. Piening,C. Wuttke,T. A. Romanova,A. V. Sadakov,O. A. Sobolevskiy,E. Yu. Guzovsky,A. S. Usoltsev,V. M. Pudalov,D. Efremov,S. Subakti,D. Wolf,A. Lubk,B. Büchner,S. Aswartham###
(1706311, 1706316)
 Here we report the synthesis,crystal growth and structural characterization of TaIrTe4, TaRhTe4,TaIr1-xRhx<missing VAR>Te4 (x<missing VAR>  0.06; 0.14; 0.78; 0.92) andTa1x<missing VAR>Ru1-xTe4 single crystals.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[9.0, 0.06, ';', 0],[12.0, 0.14, ';', 0],[15.0, 0.78, ';', 0],[269.0, 0.78, ',', 7]

Te4
###Layered van der Waals topological metals of TaTMTe4 (TM = Ir, Rh, Ru) family|G. Shipunov,B. R. Piening,C. Wuttke,T. A. Romanova,A. V. Sadakov,O. A. Sobolevskiy,E. Yu. Guzovsky,A. S. Usoltsev,V. M. Pudalov,D. Efremov,S. Subakti,D. Wolf,A. Lubk,B. Büchner,S. Aswartham###
(1706318, 1706319)
 Here we report the synthesis,crystal growth and structural characterization of TaIrTe4, TaRhTe4,TaIr1-xRhx<missing VAR>Te4 (x<missing VAR>  0.06; 0.14; 0.78; 0.92) andTa1x<missing VAR>Ru1-xTe4 single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 0.06, ';', 0],[9.0, 0.14, ';', 0],[12.0, 0.78, ';', 0],[266.0, 0.78, ',', 7]

Ta1
###Layered van der Waals topological metals of TaTMTe4 (TM = Ir, Rh, Ru) family|G. Shipunov,B. R. Piening,C. Wuttke,T. A. Romanova,A. V. Sadakov,O. A. Sobolevskiy,E. Yu. Guzovsky,A. S. Usoltsev,V. M. Pudalov,D. Efremov,S. Subakti,D. Wolf,A. Lubk,B. Büchner,S. Aswartham###
(1706340, 1706341)
 Here we report the synthesis,crystal growth and structural characterization of TaIrTe4, TaRhTe4,TaIr1-xRhx<missing VAR>Te4 (x<missing VAR>  0.06; 0.14; 0.78; 0.92) andTa1x<missing VAR>Ru1-xTe4 single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 0.06, ';', 0],[12.0, 0.14, ';', 0],[9.0, 0.78, ';', 0],[244.0, 0.78, ',', 7]

Ru1-xTe4
###Layered van der Waals topological metals of TaTMTe4 (TM = Ir, Rh, Ru) family|G. Shipunov,B. R. Piening,C. Wuttke,T. A. Romanova,A. V. Sadakov,O. A. Sobolevskiy,E. Yu. Guzovsky,A. S. Usoltsev,V. M. Pudalov,D. Efremov,S. Subakti,D. Wolf,A. Lubk,B. Büchner,S. Aswartham###
(1706343, 1706348)
 Here we report the synthesis,crystal growth and structural characterization of TaIrTe4, TaRhTe4,TaIr1-xRhx<missing VAR>Te4 (x<missing VAR>  0.06; 0.14; 0.78; 0.92) andTa1x<missing VAR>Ru1-xTe4 single crystals.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[18.0, 0.06, ';', 0],[15.0, 0.14, ';', 0],[12.0, 0.78, ';', 0],[237.0, 0.78, ',', 7]

Ta1
###Layered van der Waals topological metals of TaTMTe4 (TM = Ir, Rh, Ru) family|G. Shipunov,B. R. Piening,C. Wuttke,T. A. Romanova,A. V. Sadakov,O. A. Sobolevskiy,E. Yu. Guzovsky,A. S. Usoltsev,V. M. Pudalov,D. Efremov,S. Subakti,D. Wolf,A. Lubk,B. Büchner,S. Aswartham###
(1706357, 1706358)
 For Ta1x<missing VAR>Ru1-xTe4off-stoichiometry is shown.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 0.06, ';', 1],[29.0, 0.14, ';', 1],[26.0, 0.78, ';', 1],[227.0, 0.78, ',', 6]

Ru1-xTe4
###Layered van der Waals topological metals of TaTMTe4 (TM = Ir, Rh, Ru) family|G. Shipunov,B. R. Piening,C. Wuttke,T. A. Romanova,A. V. Sadakov,O. A. Sobolevskiy,E. Yu. Guzovsky,A. S. Usoltsev,V. M. Pudalov,D. Efremov,S. Subakti,D. Wolf,A. Lubk,B. Büchner,S. Aswartham###
(1706360, 1706365)
 For Ta1x<missing VAR>Ru1-xTe4off-stoichiometry is shown.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[35.0, 0.06, ';', 1],[32.0, 0.14, ';', 1],[29.0, 0.78, ';', 1],[220.0, 0.78, ',', 6]

TaRhTe4
###Layered van der Waals topological metals of TaTMTe4 (TM = Ir, Rh, Ru) family|G. Shipunov,B. R. Piening,C. Wuttke,T. A. Romanova,A. V. Sadakov,O. A. Sobolevskiy,E. Yu. Guzovsky,A. S. Usoltsev,V. M. Pudalov,D. Efremov,S. Subakti,D. Wolf,A. Lubk,B. Büchner,S. Aswartham###
(1706389, 1706392)
 X<missing VAR>-ray powder diffraction confirms that TaRhTe4 isisostructural to TaIrTe4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 0.06, ';', 2],[61.0, 0.14, ';', 2],[58.0, 0.78, ';', 2],[193.0, 0.78, ',', 5]

TaIrTe4
###Layered van der Waals topological metals of TaTMTe4 (TM = Ir, Rh, Ru) family|G. Shipunov,B. R. Piening,C. Wuttke,T. A. Romanova,A. V. Sadakov,O. A. Sobolevskiy,E. Yu. Guzovsky,A. S. Usoltsev,V. M. Pudalov,D. Efremov,S. Subakti,D. Wolf,A. Lubk,B. Büchner,S. Aswartham###
(1706401, 1706404)
 X<missing VAR>-ray powder diffraction confirms that TaRhTe4 isisostructural to TaIrTe4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 0.06, ';', 2],[73.0, 0.14, ';', 2],[70.0, 0.78, ';', 2],[181.0, 0.78, ',', 5]

Ta1.26
###Layered van der Waals topological metals of TaTMTe4 (TM = Ir, Rh, Ru) family|G. Shipunov,B. R. Piening,C. Wuttke,T. A. Romanova,A. V. Sadakov,O. A. Sobolevskiy,E. Yu. Guzovsky,A. S. Usoltsev,V. M. Pudalov,D. Efremov,S. Subakti,D. Wolf,A. Lubk,B. Büchner,S. Aswartham###
(1706431, 1706432)
 Ta1.26(2)Ru0.75(2)Te4.000(8) exhibits anupturn in the resistivity at low temperatures which is strongly fielddependent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 0.06, ';', 4],[103.0, 0.14, ';', 4],[100.0, 0.78, ';', 4],[153.0, 0.78, ',', 3]

Ru0.75
###Layered van der Waals topological metals of TaTMTe4 (TM = Ir, Rh, Ru) family|G. Shipunov,B. R. Piening,C. Wuttke,T. A. Romanova,A. V. Sadakov,O. A. Sobolevskiy,E. Yu. Guzovsky,A. S. Usoltsev,V. M. Pudalov,D. Efremov,S. Subakti,D. Wolf,A. Lubk,B. Büchner,S. Aswartham###
(1706436, 1706437)
 Ta1.26(2)Ru0.75(2)Te4.000(8) exhibits anupturn in the resistivity at low temperatures which is strongly fielddependent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 0.06, ';', 4],[108.0, 0.14, ';', 4],[105.0, 0.78, ';', 4],[148.0, 0.78, ',', 3]

Te4.000
###Layered van der Waals topological metals of TaTMTe4 (TM = Ir, Rh, Ru) family|G. Shipunov,B. R. Piening,C. Wuttke,T. A. Romanova,A. V. Sadakov,O. A. Sobolevskiy,E. Yu. Guzovsky,A. S. Usoltsev,V. M. Pudalov,D. Efremov,S. Subakti,D. Wolf,A. Lubk,B. Büchner,S. Aswartham###
(1706441, 1706442)
 Ta1.26(2)Ru0.75(2)Te4.000(8) exhibits anupturn in the resistivity at low temperatures which is strongly fielddependent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 0.06, ';', 4],[113.0, 0.14, ';', 4],[110.0, 0.78, ';', 4],[143.0, 0.78, ',', 3]

K
###Layered van der Waals topological metals of TaTMTe4 (TM = Ir, Rh, Ru) family|G. Shipunov,B. R. Piening,C. Wuttke,T. A. Romanova,A. V. Sadakov,O. A. Sobolevskiy,E. Yu. Guzovsky,A. S. Usoltsev,V. M. Pudalov,D. Efremov,S. Subakti,D. Wolf,A. Lubk,B. Büchner,S. Aswartham###
(1706485, 1706485)
 Below T<missing VAR> approx 4K we observed signatures of the superconductivityin the TaIr1-xRhx<missing VAR>Te4 compounds for x<missing VAR>  0.92.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 0.06, ';', 5],[157.0, 0.14, ';', 5],[154.0, 0.78, ';', 5],[100.0, 0.78, ',', 2]

TaIr1-xRh
###Layered van der Waals topological metals of TaTMTe4 (TM = Ir, Rh, Ru) family|G. Shipunov,B. R. Piening,C. Wuttke,T. A. Romanova,A. V. Sadakov,O. A. Sobolevskiy,E. Yu. Guzovsky,A. S. Usoltsev,V. M. Pudalov,D. Efremov,S. Subakti,D. Wolf,A. Lubk,B. Büchner,S. Aswartham###
(1706504, 1706509)
 Below T<missing VAR> approx 4K we observed signatures of the superconductivityin the TaIr1-xRhx<missing VAR>Te4 compounds for x<missing VAR>  0.92.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[179.0, 0.06, ';', 5],[176.0, 0.14, ';', 5],[173.0, 0.78, ';', 5],[76.0, 0.78, ',', 2]

Te4
###Layered van der Waals topological metals of TaTMTe4 (TM = Ir, Rh, Ru) family|G. Shipunov,B. R. Piening,C. Wuttke,T. A. Romanova,A. V. Sadakov,O. A. Sobolevskiy,E. Yu. Guzovsky,A. S. Usoltsev,V. M. Pudalov,D. Efremov,S. Subakti,D. Wolf,A. Lubk,B. Büchner,S. Aswartham###
(1706511, 1706512)
 Below T<missing VAR> approx 4K we observed signatures of the superconductivityin the TaIr1-xRhx<missing VAR>Te4 compounds for x<missing VAR>  0.92.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, 0.06, ';', 5],[183.0, 0.14, ';', 5],[180.0, 0.78, ';', 5],[73.0, 0.78, ',', 2]

TaIr1-xRh
###Layered van der Waals topological metals of TaTMTe4 (TM = Ir, Rh, Ru) family|G. Shipunov,B. R. Piening,C. Wuttke,T. A. Romanova,A. V. Sadakov,O. A. Sobolevskiy,E. Yu. Guzovsky,A. S. Usoltsev,V. M. Pudalov,D. Efremov,S. Subakti,D. Wolf,A. Lubk,B. Büchner,S. Aswartham###
(1706569, 1706574)
 However, for TaIr1-xRhx<missing VAR>Te4with x<missing VAR>approx 0.78, the MR has a linear term dominating in low fields thatindicates the presence of Dirac cones in the vicinity of the Fermi energy.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[244.0, 0.06, ';', 7],[241.0, 0.14, ';', 7],[238.0, 0.78, ';', 7],[11.0, 0.78, ',', 0]

Te4
###Layered van der Waals topological metals of TaTMTe4 (TM = Ir, Rh, Ru) family|G. Shipunov,B. R. Piening,C. Wuttke,T. A. Romanova,A. V. Sadakov,O. A. Sobolevskiy,E. Yu. Guzovsky,A. S. Usoltsev,V. M. Pudalov,D. Efremov,S. Subakti,D. Wolf,A. Lubk,B. Büchner,S. Aswartham###
(1706576, 1706577)
 However, for TaIr1-xRhx<missing VAR>Te4with x<missing VAR>approx 0.78, the MR has a linear term dominating in low fields thatindicates the presence of Dirac cones in the vicinity of the Fermi energy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[251.0, 0.06, ';', 7],[248.0, 0.14, ';', 7],[245.0, 0.78, ';', 7],[8.0, 0.78, ',', 0]

TaRhTe4
###Layered van der Waals topological metals of TaTMTe4 (TM = Ir, Rh, Ru) family|G. Shipunov,B. R. Piening,C. Wuttke,T. A. Romanova,A. V. Sadakov,O. A. Sobolevskiy,E. Yu. Guzovsky,A. S. Usoltsev,V. M. Pudalov,D. Efremov,S. Subakti,D. Wolf,A. Lubk,B. Büchner,S. Aswartham###
(1706642, 1706645)
 ForTaRhTe4 series the MR is almost isotropic.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[317.0, 0.06, ';', 8],[314.0, 0.14, ';', 8],[311.0, 0.78, ';', 8],[57.0, 0.78, ',', 1]

TaIrTe4
###Layered van der Waals topological metals of TaTMTe4 (TM = Ir, Rh, Ru) family|G. Shipunov,B. R. Piening,C. Wuttke,T. A. Romanova,A. V. Sadakov,O. A. Sobolevskiy,E. Yu. Guzovsky,A. S. Usoltsev,V. M. Pudalov,D. Efremov,S. Subakti,D. Wolf,A. Lubk,B. Büchner,S. Aswartham###
(1706678, 1706681)
 We have performed electronicstructure calculations for isostructural TaIrTe4 and TaRhTe4 togetherwith the projected total density of states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[353.0, 0.06, ';', 9],[350.0, 0.14, ';', 9],[347.0, 0.78, ';', 9],[93.0, 0.78, ',', 2]

TaRhTe4
###Layered van der Waals topological metals of TaTMTe4 (TM = Ir, Rh, Ru) family|G. Shipunov,B. R. Piening,C. Wuttke,T. A. Romanova,A. V. Sadakov,O. A. Sobolevskiy,E. Yu. Guzovsky,A. S. Usoltsev,V. M. Pudalov,D. Efremov,S. Subakti,D. Wolf,A. Lubk,B. Büchner,S. Aswartham###
(1706685, 1706688)
 We have performed electronicstructure calculations for isostructural TaIrTe4 and TaRhTe4 togetherwith the projected total density of states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[360.0, 0.06, ';', 9],[357.0, 0.14, ';', 9],[354.0, 0.78, ';', 9],[100.0, 0.78, ',', 2]

Rh
###Layered van der Waals topological metals of TaTMTe4 (TM = Ir, Rh, Ru) family|G. Shipunov,B. R. Piening,C. Wuttke,T. A. Romanova,A. V. Sadakov,O. A. Sobolevskiy,E. Yu. Guzovsky,A. S. Usoltsev,V. M. Pudalov,D. Efremov,S. Subakti,D. Wolf,A. Lubk,B. Büchner,S. Aswartham###
(1706723, 1706723)
 The main difference is appearanceof the Rh-band close to the Fermi level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[398.0, 0.06, ';', 10],[395.0, 0.14, ';', 10],[392.0, 0.78, ';', 10],[138.0, 0.78, ',', 3]

BN
###Radiation-induced magnetoresistance oscillations with massive Dirac fermions|Jesus Inarrea,Gloria Platero###
(1706838, 1706839)
 We study the bilayer system of monolayer graphene and hexagonal boronnitride (h<missing VAR>-BN/graphene) and the trilayer system of hexagonal boron nitrideencapsulated graphene (h<missing VAR>-BN/graphene/h<missing VAR>-BN).
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BN
###Radiation-induced magnetoresistance oscillations with massive Dirac fermions|Jesus Inarrea,Gloria Platero###
(1706868, 1706869)
 We study the bilayer system of monolayer graphene and hexagonal boronnitride (h<missing VAR>-BN/graphene) and the trilayer system of hexagonal boron nitrideencapsulated graphene (h<missing VAR>-BN/graphene/h<missing VAR>-BN).
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Radiation-induced magnetoresistance oscillations with massive Dirac fermions|Jesus Inarrea,Gloria Platero###
(1706876, 1706876)
 We study the bilayer system of monolayer graphene and hexagonal boronnitride (h<missing VAR>-BN/graphene) and the trilayer system of hexagonal boron nitrideencapsulated graphene (h<missing VAR>-BN/graphene/h<missing VAR>-BN).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs/AlGa
###Radiation-induced magnetoresistance oscillations with massive Dirac fermions|Jesus Inarrea,Gloria Platero###
(1706932, 1706936)
 We extend the radiation-drivenelectron orbit model that was previously devised to study the same oscillationsin two-dimensional systems of Schrodinger electrons (GaAs/AlGaASheterostructure) to the case of massive Dirac fermions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

S
###Radiation-induced magnetoresistance oscillations with massive Dirac fermions|Jesus Inarrea,Gloria Platero###
(1706938, 1706938)
 We extend the radiation-drivenelectron orbit model that was previously devised to study the same oscillationsin two-dimensional systems of Schrodinger electrons (GaAs/AlGaASheterostructure) to the case of massive Dirac fermions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Radiation-induced magnetoresistance oscillations with massive Dirac fermions|Jesus Inarrea,Gloria Platero###
(1706959, 1706959)
 In the simulations weobtain clear oscillations for radiation frequencies in the terahertz andfar-infrared bands.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Radiation-induced magnetoresistance oscillations with massive Dirac fermions|Jesus Inarrea,Gloria Platero###
(1707130, 1707131)
 While inGaAs the oscillations are wiped out in a few degrees, interestingly enough, formassive Dirac fermions, we obtain observable oscillations for temperaturesabove 100 K and even at room temperature for the higher frequencies used inthe simulations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Radiation-induced magnetoresistance oscillations with massive Dirac fermions|Jesus Inarrea,Gloria Platero###
(1707184, 1707184)
 While inGaAs the oscillations are wiped out in a few degrees, interestingly enough, formassive Dirac fermions, we obtain observable oscillations for temperaturesabove 100 K and even at room temperature for the higher frequencies used inthe simulations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###An In-Memory Analog Computing Co-Processor for Energy-Efficient CNN Inference on Mobile Devices|Mohammed Elbtity,Abhishek Singh,Brendan Reidy,Xiaochen Guo,Ramtin Zand###
(1707642, 1707642)
An In-Memory Analog Computing Co-Processor for Energy-Efficient CNN Inference on Mobile Devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[378.0, 6.5, '%', 6],[383.0, 10, '%', 6]

Co
###An In-Memory Analog Computing Co-Processor for Energy-Efficient CNN Inference on Mobile Devices|Mohammed Elbtity,Abhishek Singh,Brendan Reidy,Xiaochen Guo,Ramtin Zand###
(1707650, 1707650)
An In-Memory Analog Computing Co-Processor for Energy-Efficient CNN Inference on Mobile Devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[370.0, 6.5, '%', 6],[375.0, 10, '%', 6]

CNN
###An In-Memory Analog Computing Co-Processor for Energy-Efficient CNN Inference on Mobile Devices|Mohammed Elbtity,Abhishek Singh,Brendan Reidy,Xiaochen Guo,Ramtin Zand###
(1707660, 1707662)
An In-Memory Analog Computing Co-Processor for Energy-Efficient CNN Inference on Mobile Devices.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[358.0, 6.5, '%', 6],[363.0, 10, '%', 6]

In
###An In-Memory Analog Computing Co-Processor for Energy-Efficient CNN Inference on Mobile Devices|Mohammed Elbtity,Abhishek Singh,Brendan Reidy,Xiaochen Guo,Ramtin Zand###
(1707673, 1707673)
 In this paper, we develop an in-memory analog computing (IM<missing VAR>AC) architecturerealizing both synaptic behavior and activation functions within non-volatilememory arrays.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[347.0, 6.5, '%', 5],[352.0, 10, '%', 5]

I
###An In-Memory Analog Computing Co-Processor for Energy-Efficient CNN Inference on Mobile Devices|Mohammed Elbtity,Abhishek Singh,Brendan Reidy,Xiaochen Guo,Ramtin Zand###
(1707695, 1707695)
 In this paper, we develop an in-memory analog computing (IM<missing VAR>AC) architecturerealizing both synaptic behavior and activation functions within non-volatilememory arrays.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[325.0, 6.5, '%', 5],[330.0, 10, '%', 5]

C
###An In-Memory Analog Computing Co-Processor for Energy-Efficient CNN Inference on Mobile Devices|Mohammed Elbtity,Abhishek Singh,Brendan Reidy,Xiaochen Guo,Ramtin Zand###
(1707698, 1707698)
 In this paper, we develop an in-memory analog computing (IM<missing VAR>AC) architecturerealizing both synaptic behavior and activation functions within non-volatilememory arrays.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[322.0, 6.5, '%', 5],[327.0, 10, '%', 5]

SO
###An In-Memory Analog Computing Co-Processor for Energy-Efficient CNN Inference on Mobile Devices|Mohammed Elbtity,Abhishek Singh,Brendan Reidy,Xiaochen Guo,Ramtin Zand###
(1707746, 1707747)
 Spin-orbit torque magnetoresistive random-access memory(SOT-MRAM) devices are leveraged to realize sigmoidal neurons as well asbinarized synapses.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[273.0, 6.5, '%', 4],[278.0, 10, '%', 4]

I
###An In-Memory Analog Computing Co-Processor for Energy-Efficient CNN Inference on Mobile Devices|Mohammed Elbtity,Abhishek Singh,Brendan Reidy,Xiaochen Guo,Ramtin Zand###
(1707795, 1707795)
 First, it is shown the proposed IM<missing VAR>AC architecture can beutilized to realize a multilayer perceptron (MLP) classifier achieving ordersof magnitude performance improvement compared to previous mixed-signal anddigital implementations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[225.0, 6.5, '%', 3],[230.0, 10, '%', 3]

C
###An In-Memory Analog Computing Co-Processor for Energy-Efficient CNN Inference on Mobile Devices|Mohammed Elbtity,Abhishek Singh,Brendan Reidy,Xiaochen Guo,Ramtin Zand###
(1707798, 1707798)
 First, it is shown the proposed IM<missing VAR>AC architecture can beutilized to realize a multilayer perceptron (MLP) classifier achieving ordersof magnitude performance improvement compared to previous mixed-signal anddigital implementations.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[222.0, 6.5, '%', 3],[227.0, 10, '%', 3]

P
###An In-Memory Analog Computing Co-Processor for Energy-Efficient CNN Inference on Mobile Devices|Mohammed Elbtity,Abhishek Singh,Brendan Reidy,Xiaochen Guo,Ramtin Zand###
(1707822, 1707822)
 First, it is shown the proposed IM<missing VAR>AC architecture can beutilized to realize a multilayer perceptron (MLP) classifier achieving ordersof magnitude performance improvement compared to previous mixed-signal anddigital implementations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[198.0, 6.5, '%', 3],[203.0, 10, '%', 3]

CPU
###An In-Memory Analog Computing Co-Processor for Energy-Efficient CNN Inference on Mobile Devices|Mohammed Elbtity,Abhishek Singh,Brendan Reidy,Xiaochen Guo,Ramtin Zand###
(1707876, 1707878)
 Next, a heterogeneous mixed-signal and mixed-precisionCPU-IM<missing VAR>AC architecture is proposed for convolutional neural networks (CNNs)inference on mobile processors, in which IM<missing VAR>AC is designed as a co-processor torealize fully-connected (FC) layers whereas convolution layers are executed inCPU.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[142.0, 6.5, '%', 2],[147.0, 10, '%', 2]

I
###An In-Memory Analog Computing Co-Processor for Energy-Efficient CNN Inference on Mobile Devices|Mohammed Elbtity,Abhishek Singh,Brendan Reidy,Xiaochen Guo,Ramtin Zand###
(1707880, 1707880)
 Next, a heterogeneous mixed-signal and mixed-precisionCPU-IM<missing VAR>AC architecture is proposed for convolutional neural networks (CNNs)inference on mobile processors, in which IM<missing VAR>AC is designed as a co-processor torealize fully-connected (FC) layers whereas convolution layers are executed inCPU.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 6.5, '%', 2],[145.0, 10, '%', 2]

C
###An In-Memory Analog Computing Co-Processor for Energy-Efficient CNN Inference on Mobile Devices|Mohammed Elbtity,Abhishek Singh,Brendan Reidy,Xiaochen Guo,Ramtin Zand###
(1707883, 1707883)
 Next, a heterogeneous mixed-signal and mixed-precisionCPU-IM<missing VAR>AC architecture is proposed for convolutional neural networks (CNNs)inference on mobile processors, in which IM<missing VAR>AC is designed as a co-processor torealize fully-connected (FC) layers whereas convolution layers are executed inCPU.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 6.5, '%', 2],[142.0, 10, '%', 2]

CN
###An In-Memory Analog Computing Co-Processor for Energy-Efficient CNN Inference on Mobile Devices|Mohammed Elbtity,Abhishek Singh,Brendan Reidy,Xiaochen Guo,Ramtin Zand###
(1707900, 1707901)
 Next, a heterogeneous mixed-signal and mixed-precisionCPU-IM<missing VAR>AC architecture is proposed for convolutional neural networks (CNNs)inference on mobile processors, in which IM<missing VAR>AC is designed as a co-processor torealize fully-connected (FC) layers whereas convolution layers are executed inCPU.
Featurization terminated normally.
0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 6.5, '%', 2],[124.0, 10, '%', 2]

I
###An In-Memory Analog Computing Co-Processor for Energy-Efficient CNN Inference on Mobile Devices|Mohammed Elbtity,Abhishek Singh,Brendan Reidy,Xiaochen Guo,Ramtin Zand###
(1707919, 1707919)
 Next, a heterogeneous mixed-signal and mixed-precisionCPU-IM<missing VAR>AC architecture is proposed for convolutional neural networks (CNNs)inference on mobile processors, in which IM<missing VAR>AC is designed as a co-processor torealize fully-connected (FC) layers whereas convolution layers are executed inCPU.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 6.5, '%', 2],[106.0, 10, '%', 2]

C
###An In-Memory Analog Computing Co-Processor for Energy-Efficient CNN Inference on Mobile Devices|Mohammed Elbtity,Abhishek Singh,Brendan Reidy,Xiaochen Guo,Ramtin Zand###
(1707922, 1707922)
 Next, a heterogeneous mixed-signal and mixed-precisionCPU-IM<missing VAR>AC architecture is proposed for convolutional neural networks (CNNs)inference on mobile processors, in which IM<missing VAR>AC is designed as a co-processor torealize fully-connected (FC) layers whereas convolution layers are executed inCPU.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 6.5, '%', 2],[103.0, 10, '%', 2]

(FC)
###An In-Memory Analog Computing Co-Processor for Energy-Efficient CNN Inference on Mobile Devices|Mohammed Elbtity,Abhishek Singh,Brendan Reidy,Xiaochen Guo,Ramtin Zand###
(1707945, 1707948)
 Next, a heterogeneous mixed-signal and mixed-precisionCPU-IM<missing VAR>AC architecture is proposed for convolutional neural networks (CNNs)inference on mobile processors, in which IM<missing VAR>AC is designed as a co-processor torealize fully-connected (FC) layers whereas convolution layers are executed inCPU.
Featurization successful!
0,0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 6.5, '%', 2],[77.0, 10, '%', 2]

CPU
###An In-Memory Analog Computing Co-Processor for Energy-Efficient CNN Inference on Mobile Devices|Mohammed Elbtity,Abhishek Singh,Brendan Reidy,Xiaochen Guo,Ramtin Zand###
(1707965, 1707967)
 Next, a heterogeneous mixed-signal and mixed-precisionCPU-IM<missing VAR>AC architecture is proposed for convolutional neural networks (CNNs)inference on mobile processors, in which IM<missing VAR>AC is designed as a co-processor torealize fully-connected (FC) layers whereas convolution layers are executed inCPU.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[53.0, 6.5, '%', 2],[58.0, 10, '%', 2]

CPU
###An In-Memory Analog Computing Co-Processor for Energy-Efficient CNN Inference on Mobile Devices|Mohammed Elbtity,Abhishek Singh,Brendan Reidy,Xiaochen Guo,Ramtin Zand###
(1708001, 1708003)
 Architecture-level analytical models are developed to evaluate theperformance and energy consumption of the CPU-IM<missing VAR>AC architecture.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[17.0, 6.5, '%', 1],[22.0, 10, '%', 1]

I
###An In-Memory Analog Computing Co-Processor for Energy-Efficient CNN Inference on Mobile Devices|Mohammed Elbtity,Abhishek Singh,Brendan Reidy,Xiaochen Guo,Ramtin Zand###
(1708005, 1708005)
 Architecture-level analytical models are developed to evaluate theperformance and energy consumption of the CPU-IM<missing VAR>AC architecture.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 6.5, '%', 1],[20.0, 10, '%', 1]

C
###An In-Memory Analog Computing Co-Processor for Energy-Efficient CNN Inference on Mobile Devices|Mohammed Elbtity,Abhishek Singh,Brendan Reidy,Xiaochen Guo,Ramtin Zand###
(1708008, 1708008)
 Architecture-level analytical models are developed to evaluate theperformance and energy consumption of the CPU-IM<missing VAR>AC architecture.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 6.5, '%', 1],[17.0, 10, '%', 1]

CPU
###An In-Memory Analog Computing Co-Processor for Energy-Efficient CNN Inference on Mobile Devices|Mohammed Elbtity,Abhishek Singh,Brendan Reidy,Xiaochen Guo,Ramtin Zand###
(1708034, 1708036)
 Simulationresults exhibit 6.5% and 10% energy savings for CPU-IM<missing VAR>AC based realizations ofLeNet and VGG CNN models, for M<missing VAR>NIST<missing VAR> and CIFAR<missing VAR>-10 pattern recognition tasks,respectively.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[14.0, 6.5, '%', 0],[9.0, 10, '%', 0]

I
###An In-Memory Analog Computing Co-Processor for Energy-Efficient CNN Inference on Mobile Devices|Mohammed Elbtity,Abhishek Singh,Brendan Reidy,Xiaochen Guo,Ramtin Zand###
(1708038, 1708038)
 Simulationresults exhibit 6.5% and 10% energy savings for CPU-IM<missing VAR>AC based realizations ofLeNet and VGG CNN models, for M<missing VAR>NIST<missing VAR> and CIFAR<missing VAR>-10 pattern recognition tasks,respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 6.5, '%', 0],[13.0, 10, '%', 0]

C
###An In-Memory Analog Computing Co-Processor for Energy-Efficient CNN Inference on Mobile Devices|Mohammed Elbtity,Abhishek Singh,Brendan Reidy,Xiaochen Guo,Ramtin Zand###
(1708041, 1708041)
 Simulationresults exhibit 6.5% and 10% energy savings for CPU-IM<missing VAR>AC based realizations ofLeNet and VGG CNN models, for M<missing VAR>NIST<missing VAR> and CIFAR<missing VAR>-10 pattern recognition tasks,respectively.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 6.5, '%', 0],[16.0, 10, '%', 0]

V
###An In-Memory Analog Computing Co-Processor for Energy-Efficient CNN Inference on Mobile Devices|Mohammed Elbtity,Abhishek Singh,Brendan Reidy,Xiaochen Guo,Ramtin Zand###
(1708055, 1708055)
 Simulationresults exhibit 6.5% and 10% energy savings for CPU-IM<missing VAR>AC based realizations ofLeNet and VGG CNN models, for M<missing VAR>NIST<missing VAR> and CIFAR<missing VAR>-10 pattern recognition tasks,respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 6.5, '%', 0],[30.0, 10, '%', 0]

CNN
###An In-Memory Analog Computing Co-Processor for Energy-Efficient CNN Inference on Mobile Devices|Mohammed Elbtity,Abhishek Singh,Brendan Reidy,Xiaochen Guo,Ramtin Zand###
(1708059, 1708061)
 Simulationresults exhibit 6.5% and 10% energy savings for CPU-IM<missing VAR>AC based realizations ofLeNet and VGG CNN models, for M<missing VAR>NIST<missing VAR> and CIFAR<missing VAR>-10 pattern recognition tasks,respectively.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 6.5, '%', 0],[34.0, 10, '%', 0]

NIS
###An In-Memory Analog Computing Co-Processor for Energy-Efficient CNN Inference on Mobile Devices|Mohammed Elbtity,Abhishek Singh,Brendan Reidy,Xiaochen Guo,Ramtin Zand###
(1708069, 1708071)
 Simulationresults exhibit 6.5% and 10% energy savings for CPU-IM<missing VAR>AC based realizations ofLeNet and VGG CNN models, for M<missing VAR>NIST<missing VAR> and CIFAR<missing VAR>-10 pattern recognition tasks,respectively.
Featurization terminated normally.
0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 6.5, '%', 0],[44.0, 10, '%', 0]

CIF
###An In-Memory Analog Computing Co-Processor for Energy-Efficient CNN Inference on Mobile Devices|Mohammed Elbtity,Abhishek Singh,Brendan Reidy,Xiaochen Guo,Ramtin Zand###
(1708076, 1708078)
 Simulationresults exhibit 6.5% and 10% energy savings for CPU-IM<missing VAR>AC based realizations ofLeNet and VGG CNN models, for M<missing VAR>NIST<missing VAR> and CIFAR<missing VAR>-10 pattern recognition tasks,respectively.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 6.5, '%', 0],[51.0, 10, '%', 0]

CaSb2
###Superconductivity and Quantum Oscillations in Single Crystals of the Compensated Semimetal CaSb$_{2}$|M. Oudah,J. Bannies,D. A. Bonn,M. C. Aronson###
(1708125, 1708127)
Superconductivity and Quantum Oscillations in Single Crystals of the Compensated Semimetal CaSb2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 0.22, 'K', 3]

CaSb2
###Superconductivity and Quantum Oscillations in Single Crystals of the Compensated Semimetal CaSb$_{2}$|M. Oudah,J. Bannies,D. A. Bonn,M. C. Aronson###
(1708223, 1708225)
 Here, we report superconductivity andcompensation of electrons and holes in single crystals of the nodal-linesemimetal CaSb2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 0.22, 'K', 1]

BCS
###Superconductivity and Quantum Oscillations in Single Crystals of the Compensated Semimetal CaSb$_{2}$|M. Oudah,J. Bannies,D. A. Bonn,M. C. Aronson###
(1708288, 1708290)
 We characterize the superconducting state and find thatCooper pairs have moderate-weak coupling, and the superconducting transition inspecific heat down to 0.22 K deviates from that of a BCS superconductor.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 0.22, 'K', 0]

CaSb2
###Superconductivity and Quantum Oscillations in Single Crystals of the Compensated Semimetal CaSb$_{2}$|M. Oudah,J. Bannies,D. A. Bonn,M. C. Aronson###
(1708396, 1708398)
 Furthermore, we observe de Haas-van Alphen (d<missing VAR>HvA)oscillations consistent with a small Fermi surface in the semimetallic state ofCaSb2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 0.22, 'K', 2]

Sb1
###Superconductivity and Quantum Oscillations in Single Crystals of the Compensated Semimetal CaSb$_{2}$|M. Oudah,J. Bannies,D. A. Bonn,M. C. Aronson###
(1708436, 1708437)
 Our DFT calculations show that the two electron bands crossing theFermi level are associated with Sb1 zig-zag chains, while the hole band isassociated with Sb2 zig-zag chains.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 0.22, 'K', 3]

Sb2
###Superconductivity and Quantum Oscillations in Single Crystals of the Compensated Semimetal CaSb$_{2}$|M. Oudah,J. Bannies,D. A. Bonn,M. C. Aronson###
(1708461, 1708462)
 Our DFT calculations show that the two electron bands crossing theFermi level are associated with Sb1 zig-zag chains, while the hole band isassociated with Sb2 zig-zag chains.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[185.0, 0.22, 'K', 3]

Sb1
###Superconductivity and Quantum Oscillations in Single Crystals of the Compensated Semimetal CaSb$_{2}$|M. Oudah,J. Bannies,D. A. Bonn,M. C. Aronson###
(1708473, 1708474)
 The Sb1 zig-zag chains form a distortedsquare net, which may relate the M<missing VAR>Sb2 family to the well known M<missing VAR>SbTesquare net semimetals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[197.0, 0.22, 'K', 4]

Sb2
###Superconductivity and Quantum Oscillations in Single Crystals of the Compensated Semimetal CaSb$_{2}$|M. Oudah,J. Bannies,D. A. Bonn,M. C. Aronson###
(1708503, 1708504)
 The Sb1 zig-zag chains form a distortedsquare net, which may relate the M<missing VAR>Sb2 family to the well known M<missing VAR>SbTesquare net semimetals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[227.0, 0.22, 'K', 4]

SbTe
###Superconductivity and Quantum Oscillations in Single Crystals of the Compensated Semimetal CaSb$_{2}$|M. Oudah,J. Bannies,D. A. Bonn,M. C. Aronson###
(1708517, 1708518)
 The Sb1 zig-zag chains form a distortedsquare net, which may relate the M<missing VAR>Sb2 family to the well known M<missing VAR>SbTesquare net semimetals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[241.0, 0.22, 'K', 4]

CaSb2
###Superconductivity and Quantum Oscillations in Single Crystals of the Compensated Semimetal CaSb$_{2}$|M. Oudah,J. Bannies,D. A. Bonn,M. C. Aronson###
(1708553, 1708555)
 Realization of superconductivity and a compensatedsemimetal state in single crystals of CaSb2 establishes the diantimonidefamily as a candidate class of materials for achieving topologicalsuperconductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[277.0, 0.22, 'K', 5]

C
###Unusual competition of superconductivity and charge-density-wave state in a compressed topological kagome metal|F. H. Yu,D. H. Ma,W. Z. Zhuo,S. Q. Liu,X. K. Wen,B. Lei,J. J. Ying,X. H. Chen###
(1708662, 1708662)
 Understanding the competition between superconductivity and other orderedstates (such as antiferromagnetic or charge-density-wave (CD<missing VAR>W) state) is acentral issue in condensed matter physics.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 2.7, 'K', 2],[231.0, 1.1, 'GPa', 3],[296.0, 8, 'K', 4]

W
###Unusual competition of superconductivity and charge-density-wave state in a compressed topological kagome metal|F. H. Yu,D. H. Ma,W. Z. Zhuo,S. Q. Liu,X. K. Wen,B. Lei,J. J. Ying,X. H. Chen###
(1708664, 1708664)
 Understanding the competition between superconductivity and other orderedstates (such as antiferromagnetic or charge-density-wave (CD<missing VAR>W) state) is acentral issue in condensed matter physics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 2.7, 'K', 2],[229.0, 1.1, 'GPa', 3],[294.0, 8, 'K', 4]

V3Sb5
###Unusual competition of superconductivity and charge-density-wave state in a compressed topological kagome metal|F. H. Yu,D. H. Ma,W. Z. Zhuo,S. Q. Liu,X. K. Wen,B. Lei,J. J. Ying,X. H. Chen###
(1708702, 1708705)
 The recently discovered layeredkagome metal AV3Sb5 (A  K, Rb, and Cs) provides us a new playground to studythe interplay of superconductivity and CD<missing VAR>W state by involving nontrivialtopology of band structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.375,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.625,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 2.7, 'K', 1],[188.0, 1.1, 'GPa', 2],[253.0, 8, 'K', 3]

K
###Unusual competition of superconductivity and charge-density-wave state in a compressed topological kagome metal|F. H. Yu,D. H. Ma,W. Z. Zhuo,S. Q. Liu,X. K. Wen,B. Lei,J. J. Ying,X. H. Chen###
(1708711, 1708711)
 The recently discovered layeredkagome metal AV3Sb5 (A  K, Rb, and Cs) provides us a new playground to studythe interplay of superconductivity and CD<missing VAR>W state by involving nontrivialtopology of band structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 2.7, 'K', 1],[182.0, 1.1, 'GPa', 2],[247.0, 8, 'K', 3]

Rb
###Unusual competition of superconductivity and charge-density-wave state in a compressed topological kagome metal|F. H. Yu,D. H. Ma,W. Z. Zhuo,S. Q. Liu,X. K. Wen,B. Lei,J. J. Ying,X. H. Chen###
(1708714, 1708714)
 The recently discovered layeredkagome metal AV3Sb5 (A  K, Rb, and Cs) provides us a new playground to studythe interplay of superconductivity and CD<missing VAR>W state by involving nontrivialtopology of band structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 2.7, 'K', 1],[179.0, 1.1, 'GPa', 2],[244.0, 8, 'K', 3]

Cs
###Unusual competition of superconductivity and charge-density-wave state in a compressed topological kagome metal|F. H. Yu,D. H. Ma,W. Z. Zhuo,S. Q. Liu,X. K. Wen,B. Lei,J. J. Ying,X. H. Chen###
(1708719, 1708719)
 The recently discovered layeredkagome metal AV3Sb5 (A  K, Rb, and Cs) provides us a new playground to studythe interplay of superconductivity and CD<missing VAR>W state by involving nontrivialtopology of band structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 2.7, 'K', 1],[174.0, 1.1, 'GPa', 2],[239.0, 8, 'K', 3]

C
###Unusual competition of superconductivity and charge-density-wave state in a compressed topological kagome metal|F. H. Yu,D. H. Ma,W. Z. Zhuo,S. Q. Liu,X. K. Wen,B. Lei,J. J. Ying,X. H. Chen###
(1708747, 1708747)
 The recently discovered layeredkagome metal AV3Sb5 (A  K, Rb, and Cs) provides us a new playground to studythe interplay of superconductivity and CD<missing VAR>W state by involving nontrivialtopology of band structures.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 2.7, 'K', 1],[146.0, 1.1, 'GPa', 2],[211.0, 8, 'K', 3]

W
###Unusual competition of superconductivity and charge-density-wave state in a compressed topological kagome metal|F. H. Yu,D. H. Ma,W. Z. Zhuo,S. Q. Liu,X. K. Wen,B. Lei,J. J. Ying,X. H. Chen###
(1708749, 1708749)
 The recently discovered layeredkagome metal AV3Sb5 (A  K, Rb, and Cs) provides us a new playground to studythe interplay of superconductivity and CD<missing VAR>W state by involving nontrivialtopology of band structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 2.7, 'K', 1],[144.0, 1.1, 'GPa', 2],[209.0, 8, 'K', 3]

CsV3Sb5
###Unusual competition of superconductivity and charge-density-wave state in a compressed topological kagome metal|F. H. Yu,D. H. Ma,W. Z. Zhuo,S. Q. Liu,X. K. Wen,B. Lei,J. J. Ying,X. H. Chen###
(1708797, 1708801)
 Here, we conduct high-pressure electricaltransport and magnetic susceptibility measurements to study CsV3Sb5 with thehighest Tc of 2.7 K in AV3Sb5 family.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5555555555555556,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 2.7, 'K', 0],[92.0, 1.1, 'GPa', 1],[157.0, 8, 'K', 2]

Tc
###Unusual competition of superconductivity and charge-density-wave state in a compressed topological kagome metal|F. H. Yu,D. H. Ma,W. Z. Zhuo,S. Q. Liu,X. K. Wen,B. Lei,J. J. Ying,X. H. Chen###
(1708810, 1708810)
 Here, we conduct high-pressure electricaltransport and magnetic susceptibility measurements to study CsV3Sb5 with thehighest Tc of 2.7 K in AV3Sb5 family.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 2.7, 'K', 0],[83.0, 1.1, 'GPa', 1],[148.0, 8, 'K', 2]

V3Sb5
###Unusual competition of superconductivity and charge-density-wave state in a compressed topological kagome metal|F. H. Yu,D. H. Ma,W. Z. Zhuo,S. Q. Liu,X. K. Wen,B. Lei,J. J. Ying,X. H. Chen###
(1708818, 1708821)
 Here, we conduct high-pressure electricaltransport and magnetic susceptibility measurements to study CsV3Sb5 with thehighest Tc of 2.7 K in AV3Sb5 family.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.375,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.625,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 2.7, 'K', 0],[72.0, 1.1, 'GPa', 1],[137.0, 8, 'K', 2]

C
###Unusual competition of superconductivity and charge-density-wave state in a compressed topological kagome metal|F. H. Yu,D. H. Ma,W. Z. Zhuo,S. Q. Liu,X. K. Wen,B. Lei,J. J. Ying,X. H. Chen###
(1708830, 1708830)
 While the CD<missing VAR>W transition is monotonicallysuppressed by pressure, superconductivity is enhanced with increasing pressureup to P10.7 G<missing VAR>Pa, then an unexpected suppression on superconductivity happensuntil pressure around 1.1 GPa, after that, Tc is enhanced with increasingpressure again.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 2.7, 'K', 1],[63.0, 1.1, 'GPa', 0],[128.0, 8, 'K', 1]

W
###Unusual competition of superconductivity and charge-density-wave state in a compressed topological kagome metal|F. H. Yu,D. H. Ma,W. Z. Zhuo,S. Q. Liu,X. K. Wen,B. Lei,J. J. Ying,X. H. Chen###
(1708832, 1708832)
 While the CD<missing VAR>W transition is monotonicallysuppressed by pressure, superconductivity is enhanced with increasing pressureup to P10.7 G<missing VAR>Pa, then an unexpected suppression on superconductivity happensuntil pressure around 1.1 GPa, after that, Tc is enhanced with increasingpressure again.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 2.7, 'K', 1],[61.0, 1.1, 'GPa', 0],[126.0, 8, 'K', 1]

P10.7
###Unusual competition of superconductivity and charge-density-wave state in a compressed topological kagome metal|F. H. Yu,D. H. Ma,W. Z. Zhuo,S. Q. Liu,X. K. Wen,B. Lei,J. J. Ying,X. H. Chen###
(1708865, 1708867)
 While the CD<missing VAR>W transition is monotonicallysuppressed by pressure, superconductivity is enhanced with increasing pressureup to P10.7 G<missing VAR>Pa, then an unexpected suppression on superconductivity happensuntil pressure around 1.1 GPa, after that, Tc is enhanced with increasingpressure again.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 2.7, 'K', 1],[26.0, 1.1, 'GPa', 0],[91.0, 8, 'K', 1]

Pa
###Unusual competition of superconductivity and charge-density-wave state in a compressed topological kagome metal|F. H. Yu,D. H. Ma,W. Z. Zhuo,S. Q. Liu,X. K. Wen,B. Lei,J. J. Ying,X. H. Chen###
(1708870, 1708870)
 While the CD<missing VAR>W transition is monotonicallysuppressed by pressure, superconductivity is enhanced with increasing pressureup to P10.7 G<missing VAR>Pa, then an unexpected suppression on superconductivity happensuntil pressure around 1.1 GPa, after that, Tc is enhanced with increasingpressure again.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 2.7, 'K', 1],[23.0, 1.1, 'GPa', 0],[88.0, 8, 'K', 1]

Tc
###Unusual competition of superconductivity and charge-density-wave state in a compressed topological kagome metal|F. H. Yu,D. H. Ma,W. Z. Zhuo,S. Q. Liu,X. K. Wen,B. Lei,J. J. Ying,X. H. Chen###
(1708901, 1708901)
 While the CD<missing VAR>W transition is monotonicallysuppressed by pressure, superconductivity is enhanced with increasing pressureup to P10.7 G<missing VAR>Pa, then an unexpected suppression on superconductivity happensuntil pressure around 1.1 GPa, after that, Tc is enhanced with increasingpressure again.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 2.7, 'K', 1],[8.0, 1.1, 'GPa', 0],[57.0, 8, 'K', 1]

C
###Unusual competition of superconductivity and charge-density-wave state in a compressed topological kagome metal|F. H. Yu,D. H. Ma,W. Z. Zhuo,S. Q. Liu,X. K. Wen,B. Lei,J. J. Ying,X. H. Chen###
(1708919, 1708919)
 The CD<missing VAR>W is completely suppressed at a critical pressure P22G<missing VAR>Pa together with a maximum Tc of about 8 K.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 2.7, 'K', 2],[26.0, 1.1, 'GPa', 1],[39.0, 8, 'K', 0]

W
###Unusual competition of superconductivity and charge-density-wave state in a compressed topological kagome metal|F. H. Yu,D. H. Ma,W. Z. Zhuo,S. Q. Liu,X. K. Wen,B. Lei,J. J. Ying,X. H. Chen###
(1708921, 1708921)
 The CD<missing VAR>W is completely suppressed at a critical pressure P22G<missing VAR>Pa together with a maximum Tc of about 8 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 2.7, 'K', 2],[28.0, 1.1, 'GPa', 1],[37.0, 8, 'K', 0]

P22
###Unusual competition of superconductivity and charge-density-wave state in a compressed topological kagome metal|F. H. Yu,D. H. Ma,W. Z. Zhuo,S. Q. Liu,X. K. Wen,B. Lei,J. J. Ying,X. H. Chen###
(1708937, 1708939)
 The CD<missing VAR>W is completely suppressed at a critical pressure P22G<missing VAR>Pa together with a maximum Tc of about 8 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 2.7, 'K', 2],[44.0, 1.1, 'GPa', 1],[19.0, 8, 'K', 0]

Pa
###Unusual competition of superconductivity and charge-density-wave state in a compressed topological kagome metal|F. H. Yu,D. H. Ma,W. Z. Zhuo,S. Q. Liu,X. K. Wen,B. Lei,J. J. Ying,X. H. Chen###
(1708943, 1708943)
 The CD<missing VAR>W is completely suppressed at a critical pressure P22G<missing VAR>Pa together with a maximum Tc of about 8 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 2.7, 'K', 2],[50.0, 1.1, 'GPa', 1],[15.0, 8, 'K', 0]

Tc
###Unusual competition of superconductivity and charge-density-wave state in a compressed topological kagome metal|F. H. Yu,D. H. Ma,W. Z. Zhuo,S. Q. Liu,X. K. Wen,B. Lei,J. J. Ying,X. H. Chen###
(1708953, 1708953)
 The CD<missing VAR>W is completely suppressed at a critical pressure P22G<missing VAR>Pa together with a maximum Tc of about 8 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 2.7, 'K', 2],[60.0, 1.1, 'GPa', 1],[5.0, 8, 'K', 0]

In
###Unusual competition of superconductivity and charge-density-wave state in a compressed topological kagome metal|F. H. Yu,D. H. Ma,W. Z. Zhuo,S. Q. Liu,X. K. Wen,B. Lei,J. J. Ying,X. H. Chen###
(1708961, 1708961)
 In contrast to a common dome-likebehavior, the pressure-dependent Tc shows an unexpected double-peak behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 2.7, 'K', 3],[68.0, 1.1, 'GPa', 2],[3.0, 8, 'K', 1]

Tc
###Unusual competition of superconductivity and charge-density-wave state in a compressed topological kagome metal|F. H. Yu,D. H. Ma,W. Z. Zhuo,S. Q. Liu,X. K. Wen,B. Lei,J. J. Ying,X. H. Chen###
(1708985, 1708985)
 In contrast to a common dome-likebehavior, the pressure-dependent Tc shows an unexpected double-peak behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[172.0, 2.7, 'K', 3],[92.0, 1.1, 'GPa', 2],[27.0, 8, 'K', 1]

Tc
###Unusual competition of superconductivity and charge-density-wave state in a compressed topological kagome metal|F. H. Yu,D. H. Ma,W. Z. Zhuo,S. Q. Liu,X. K. Wen,B. Lei,J. J. Ying,X. H. Chen###
(1709009, 1709009)
The unusual suppression of Tc at P1 is concomitant with the rapidly damping ofquantum oscillations, sudden enhancement of the residual resistivity and rapiddecrease of magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[196.0, 2.7, 'K', 4],[116.0, 1.1, 'GPa', 3],[51.0, 8, 'K', 2]

P1
###Unusual competition of superconductivity and charge-density-wave state in a compressed topological kagome metal|F. H. Yu,D. H. Ma,W. Z. Zhuo,S. Q. Liu,X. K. Wen,B. Lei,J. J. Ying,X. H. Chen###
(1709013, 1709014)
The unusual suppression of Tc at P1 is concomitant with the rapidly damping ofquantum oscillations, sudden enhancement of the residual resistivity and rapiddecrease of magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[200.0, 2.7, 'K', 4],[120.0, 1.1, 'GPa', 3],[55.0, 8, 'K', 2]

C
###Unusual competition of superconductivity and charge-density-wave state in a compressed topological kagome metal|F. H. Yu,D. H. Ma,W. Z. Zhuo,S. Q. Liu,X. K. Wen,B. Lei,J. J. Ying,X. H. Chen###
(1709079, 1709079)
 Our discoveries indicate an unusual competitionbetween superconductivity and CD<missing VAR>W state in pressurized kagome lattice.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[266.0, 2.7, 'K', 5],[186.0, 1.1, 'GPa', 4],[121.0, 8, 'K', 3]

W
###Unusual competition of superconductivity and charge-density-wave state in a compressed topological kagome metal|F. H. Yu,D. H. Ma,W. Z. Zhuo,S. Q. Liu,X. K. Wen,B. Lei,J. J. Ying,X. H. Chen###
(1709081, 1709081)
 Our discoveries indicate an unusual competitionbetween superconductivity and CD<missing VAR>W state in pressurized kagome lattice.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[268.0, 2.7, 'K', 5],[188.0, 1.1, 'GPa', 4],[123.0, 8, 'K', 3]

UTe2
###Quasi-uniaxial pressure induced superconductivity in stoichiometric compound UTe$_2$|Chongli Yang,Jing Guo,Yazhou Zhou,Shu Cai,Vladimir A. Sidorov,Cheng Huang,Sijin Long,Youguo Shi,Qiuyun Chen,Shiyong Tan,Yu Gong,Yanchun Li,Xiaodong Li,Qi Wu,Piers Coleman,Tao Xiang,Liling Sun###
(1709118, 1709120)
Quasi-uniaxial pressure induced superconductivity in stoichiometric compound UTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[312.0, 4.8, 'GPa', 5]

UTe2
###Quasi-uniaxial pressure induced superconductivity in stoichiometric compound UTe$_2$|Chongli Yang,Jing Guo,Yazhou Zhou,Shu Cai,Vladimir A. Sidorov,Cheng Huang,Sijin Long,Youguo Shi,Qiuyun Chen,Shiyong Tan,Yu Gong,Yanchun Li,Xiaodong Li,Qi Wu,Piers Coleman,Tao Xiang,Liling Sun###
(1709141, 1709143)
 The recent discovery of superconductivity in heavy Fermion compound UTe2, acandidate topological and triplet-paired superconductor, has aroused widespreadinterest.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[289.0, 4.8, 'GPa', 4]

UTe2
###Quasi-uniaxial pressure induced superconductivity in stoichiometric compound UTe$_2$|Chongli Yang,Jing Guo,Yazhou Zhou,Shu Cai,Vladimir A. Sidorov,Cheng Huang,Sijin Long,Youguo Shi,Qiuyun Chen,Shiyong Tan,Yu Gong,Yanchun Li,Xiaodong Li,Qi Wu,Piers Coleman,Tao Xiang,Liling Sun###
(1709201, 1709203)
 However, to date, there is no consensus on whether the stoichiometricsample of UTe2 is superconducting or not due to lack of reliable evidence todistinguish the difference between the nominal and real compositions ofsamples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[229.0, 4.8, 'GPa', 3]

U
###Quasi-uniaxial pressure induced superconductivity in stoichiometric compound UTe$_2$|Chongli Yang,Jing Guo,Yazhou Zhou,Shu Cai,Vladimir A. Sidorov,Cheng Huang,Sijin Long,Youguo Shi,Qiuyun Chen,Shiyong Tan,Yu Gong,Yanchun Li,Xiaodong Li,Qi Wu,Piers Coleman,Tao Xiang,Liling Sun###
(1709273, 1709273)
 Here, we are the first to clarify that the stoichiometric UT<missing VAR>2 isnon-superconducting at ambient pressure and under hydrostatic pressure up to 6G<missing VAR>Pa, however we find that it can be compressed into superconductivity byapplication of quasi-uniaxial pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[159.0, 4.8, 'GPa', 2]

Pa
###Quasi-uniaxial pressure induced superconductivity in stoichiometric compound UTe$_2$|Chongli Yang,Jing Guo,Yazhou Zhou,Shu Cai,Vladimir A. Sidorov,Cheng Huang,Sijin Long,Youguo Shi,Qiuyun Chen,Shiyong Tan,Yu Gong,Yanchun Li,Xiaodong Li,Qi Wu,Piers Coleman,Tao Xiang,Liling Sun###
(1709306, 1709306)
 Here, we are the first to clarify that the stoichiometric UT<missing VAR>2 isnon-superconducting at ambient pressure and under hydrostatic pressure up to 6G<missing VAR>Pa, however we find that it can be compressed into superconductivity byapplication of quasi-uniaxial pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 4.8, 'GPa', 2]

Pa
###Quasi-uniaxial pressure induced superconductivity in stoichiometric compound UTe$_2$|Chongli Yang,Jing Guo,Yazhou Zhou,Shu Cai,Vladimir A. Sidorov,Cheng Huang,Sijin Long,Youguo Shi,Qiuyun Chen,Shiyong Tan,Yu Gong,Yanchun Li,Xiaodong Li,Qi Wu,Piers Coleman,Tao Xiang,Liling Sun###
(1709428, 1709428)
 Measurements of resistivity,magnetoresistance and susceptibility reveal that the quasi-uniaxial pressureresults in a suppression of the Kondo coherent state seen at ambient pressure,and then leads to a superconductivity initially emerged on the ab-plane at 1.5G<missing VAR>Pa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 4.8, 'GPa', 1]

At
###Quasi-uniaxial pressure induced superconductivity in stoichiometric compound UTe$_2$|Chongli Yang,Jing Guo,Yazhou Zhou,Shu Cai,Vladimir A. Sidorov,Cheng Huang,Sijin Long,Youguo Shi,Qiuyun Chen,Shiyong Tan,Yu Gong,Yanchun Li,Xiaodong Li,Qi Wu,Piers Coleman,Tao Xiang,Liling Sun###
(1709431, 1709431)
 At 4.8 GPa, the superconductivity is developed in three crystallographicdirections.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[1.0, 4.8, 'GPa', 0]

UTe2
###Quasi-uniaxial pressure induced superconductivity in stoichiometric compound UTe$_2$|Chongli Yang,Jing Guo,Yazhou Zhou,Shu Cai,Vladimir A. Sidorov,Cheng Huang,Sijin Long,Youguo Shi,Qiuyun Chen,Shiyong Tan,Yu Gong,Yanchun Li,Xiaodong Li,Qi Wu,Piers Coleman,Tao Xiang,Liling Sun###
(1709531, 1709533)
 The discovery of the quasi-uniaxial-pressure-inducedsuperconductivity with exotic magnetic state in the stoichiometric UTe2 notonly provide new understandings on this compound, but also highlight the vitalrole of Te deficiency in developing the superconductivity at ambient pressures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0
[99.0, 4.8, 'GPa', 2]

Te
###Quasi-uniaxial pressure induced superconductivity in stoichiometric compound UTe$_2$|Chongli Yang,Jing Guo,Yazhou Zhou,Shu Cai,Vladimir A. Sidorov,Cheng Huang,Sijin Long,Youguo Shi,Qiuyun Chen,Shiyong Tan,Yu Gong,Yanchun Li,Xiaodong Li,Qi Wu,Piers Coleman,Tao Xiang,Liling Sun###
(1709568, 1709568)
 The discovery of the quasi-uniaxial-pressure-inducedsuperconductivity with exotic magnetic state in the stoichiometric UTe2 notonly provide new understandings on this compound, but also highlight the vitalrole of Te deficiency in developing the superconductivity at ambient pressures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 4.8, 'GPa', 2]

U
###Theory of unidirectional magnetoresistance and nonlinear Hall effect|Frank Freimuth,Stefan Blügel,Yuriy Mokrousov###
(1709623, 1709623)
 We study the unidirectional magnetoresistance (UMR) and the nonlinear Halleffect (NLHE) in the ferromagnetic Rashba model.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Theory of unidirectional magnetoresistance and nonlinear Hall effect|Frank Freimuth,Stefan Blügel,Yuriy Mokrousov###
(1709640, 1709640)
 We study the unidirectional magnetoresistance (UMR) and the nonlinear Halleffect (NLHE) in the ferromagnetic Rashba model.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

U
###Theory of unidirectional magnetoresistance and nonlinear Hall effect|Frank Freimuth,Stefan Blügel,Yuriy Mokrousov###
(1709748, 1709748)
 We compare two different formalisms, namely thestandard Keldysh nonequilibrium formalism and the Moyal-Keldysh formalism, toderive the nonlinear conductivities of UMR and NLHE.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Theory of unidirectional magnetoresistance and nonlinear Hall effect|Frank Freimuth,Stefan Blügel,Yuriy Mokrousov###
(1709754, 1709754)
 We compare two different formalisms, namely thestandard Keldysh nonequilibrium formalism and the Moyal-Keldysh formalism, toderive the nonlinear conductivities of UMR and NLHE.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

U
###Theory of unidirectional magnetoresistance and nonlinear Hall effect|Frank Freimuth,Stefan Blügel,Yuriy Mokrousov###
(1709799, 1709799)
 The UMR and the NLHE nonlinear conductivities tendto be comparable in magnitude according to our calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Theory of unidirectional magnetoresistance and nonlinear Hall effect|Frank Freimuth,Stefan Blügel,Yuriy Mokrousov###
(1709807, 1709807)
 The UMR and the NLHE nonlinear conductivities tendto be comparable in magnitude according to our calculations.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

U
###Theory of unidirectional magnetoresistance and nonlinear Hall effect|Frank Freimuth,Stefan Blügel,Yuriy Mokrousov###
(1709968, 1709968)
 Additionally, wecompare our Keldysh nonequilibrium expression in the independent-particleapproximation to literature expressions of the UMR that have been obtainedwithin the constant relaxation time approximation of the Boltzmann formalism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Spin-Torque-driven Terahertz Auto Oscillations in Non-Collinear Coplanar Antiferromagnets|Ankit Shukla,Shaloo Rakheja###
(1710224, 1710224)
 We theoretically and numerically study the terahertz auto oscillations inthin-film metallic non-collinear coplanar antiferromagnets (AFMs), such asmathrmMn3Sn and mathrmMn3Ir, under the effect of anti-dampingspin-torque with spin polarization perpendicular to the plane of the film.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn3Sn
###Spin-Torque-driven Terahertz Auto Oscillations in Non-Collinear Coplanar Antiferromagnets|Ankit Shukla,Shaloo Rakheja###
(1710235, 1710237)
 We theoretically and numerically study the terahertz auto oscillations inthin-film metallic non-collinear coplanar antiferromagnets (AFMs), such asmathrmMn3Sn and mathrmMn3Ir, under the effect of anti-dampingspin-torque with spin polarization perpendicular to the plane of the film.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn3Ir
###Spin-Torque-driven Terahertz Auto Oscillations in Non-Collinear Coplanar Antiferromagnets|Ankit Shukla,Shaloo Rakheja###
(1710242, 1710244)
 We theoretically and numerically study the terahertz auto oscillations inthin-film metallic non-collinear coplanar antiferromagnets (AFMs), such asmathrmMn3Sn and mathrmMn3Ir, under the effect of anti-dampingspin-torque with spin polarization perpendicular to the plane of the film.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Spin-Torque-driven Terahertz Auto Oscillations in Non-Collinear Coplanar Antiferromagnets|Ankit Shukla,Shaloo Rakheja###
(1710303, 1710303)
 Toobtain the order parameter dynamics in these AFMs, we solve threeLandau-Lifshitz-Gilbert equations coupled by exchange interactions assumingboth single- and multi-domain (micromagnetics) dynamical processes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin-Torque-driven Terahertz Auto Oscillations in Non-Collinear Coplanar Antiferromagnets|Ankit Shukla,Shaloo Rakheja###
(1710353, 1710353)
 In thelimit of strong exchange interaction, the oscillatory dynamics of the orderparameter in these AFMs, which have opposite chiralities, could be mapped tothat of a linear damped-driven pendulum in the case of mathrmMn3Sn, anda non-linear damped-driven pendulum in case of mathrmMn3Ir.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Spin-Torque-driven Terahertz Auto Oscillations in Non-Collinear Coplanar Antiferromagnets|Ankit Shukla,Shaloo Rakheja###
(1710389, 1710389)
 In thelimit of strong exchange interaction, the oscillatory dynamics of the orderparameter in these AFMs, which have opposite chiralities, could be mapped tothat of a linear damped-driven pendulum in the case of mathrmMn3Sn, anda non-linear damped-driven pendulum in case of mathrmMn3Ir.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn3Sn
###Spin-Torque-driven Terahertz Auto Oscillations in Non-Collinear Coplanar Antiferromagnets|Ankit Shukla,Shaloo Rakheja###
(1710434, 1710436)
 In thelimit of strong exchange interaction, the oscillatory dynamics of the orderparameter in these AFMs, which have opposite chiralities, could be mapped tothat of a linear damped-driven pendulum in the case of mathrmMn3Sn, anda non-linear damped-driven pendulum in case of mathrmMn3Ir.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn3Ir
###Spin-Torque-driven Terahertz Auto Oscillations in Non-Collinear Coplanar Antiferromagnets|Ankit Shukla,Shaloo Rakheja###
(1710461, 1710463)
 In thelimit of strong exchange interaction, the oscillatory dynamics of the orderparameter in these AFMs, which have opposite chiralities, could be mapped tothat of a linear damped-driven pendulum in the case of mathrmMn3Sn, anda non-linear damped-driven pendulum in case of mathrmMn3Ir.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn3Ir
###Spin-Torque-driven Terahertz Auto Oscillations in Non-Collinear Coplanar Antiferromagnets|Ankit Shukla,Shaloo Rakheja###
(1710562, 1710564)
 We also obtain a closed-form approximate solution of the oscillationfrequency for large input currents in case of both mathrmMn3Ir andmathrmMn3Sn.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn3Sn
###Spin-Torque-driven Terahertz Auto Oscillations in Non-Collinear Coplanar Antiferromagnets|Ankit Shukla,Shaloo Rakheja###
(1710570, 1710572)
 We also obtain a closed-form approximate solution of the oscillationfrequency for large input currents in case of both mathrmMn3Ir andmathrmMn3Sn.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Spin-Torque-driven Terahertz Auto Oscillations in Non-Collinear Coplanar Antiferromagnets|Ankit Shukla,Shaloo Rakheja###
(1710733, 1710733)
 Finally, we explore the spikingdynamics of two unidirectional as well as bidirectional coupled AFM<missing VAR> oscillatorsusing non-linear damped-driven pendulum equations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co/Pt/Co
###Study of Spin-Orbit Interactions and Interlayer Ferromagnetic Coupling in Co/Pt/Co Trilayers in Wide Range of Heavy Metal Thickness|Piotr Ogrodnik,Krzysztof Grochot,Łukasz Karwacki,Jarosław Kanak,Michał Prokop,Jakub Chęciński,Witold Skowroński,Sławomir Ziętek,Tomasz Stobiecki###
(1710782, 1710786)
Study of Spin-Orbit Interactions and Interlayer Ferromagnetic Coupling in Co/Pt/Co Trilayers in Wide Range of Heavy Metal Thickness.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

In
###Study of Spin-Orbit Interactions and Interlayer Ferromagnetic Coupling in Co/Pt/Co Trilayers in Wide Range of Heavy Metal Thickness|Piotr Ogrodnik,Krzysztof Grochot,Łukasz Karwacki,Jarosław Kanak,Michał Prokop,Jakub Chęciński,Witold Skowroński,Sławomir Ziętek,Tomasz Stobiecki###
(1711030, 1711030)
 In the investigated devices, Ptis used as a source of the spin current and as a non-magnetic spacer withvariable thickness, which enables the magnitude of the interlayer ferromagneticexchange coupling to be effectively tuned.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Study of Spin-Orbit Interactions and Interlayer Ferromagnetic Coupling in Co/Pt/Co Trilayers in Wide Range of Heavy Metal Thickness|Piotr Ogrodnik,Krzysztof Grochot,Łukasz Karwacki,Jarosław Kanak,Michał Prokop,Jakub Chęciński,Witold Skowroński,Sławomir Ziętek,Tomasz Stobiecki###
(1711039, 1711039)
 In the investigated devices, Ptis used as a source of the spin current and as a non-magnetic spacer withvariable thickness, which enables the magnitude of the interlayer ferromagneticexchange coupling to be effectively tuned.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Study of Spin-Orbit Interactions and Interlayer Ferromagnetic Coupling in Co/Pt/Co Trilayers in Wide Range of Heavy Metal Thickness|Piotr Ogrodnik,Krzysztof Grochot,Łukasz Karwacki,Jarosław Kanak,Michał Prokop,Jakub Chęciński,Witold Skowroński,Sławomir Ziętek,Tomasz Stobiecki###
(1711118, 1711118)
 We also find the Ptthickness-dependent changes in magnetic anisotropies, magnetoresistance,effective Hall angle and, eventually, spin-orbit torque fields at interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LiMn6Sn6
###Large anomalous Hall effect in the kagome ferromagnet LiMn$_6$Sn$_6$|Dong Chen,Congcong Le,Chenguang Fu,Haicheng Lin,Walter Schnelle,Yan Sun,Claudia Felser###
(1711277, 1711281)
Large anomalous Hall effect in the kagome ferromagnet LiMn6Sn6.
Featurization terminated normally.
0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.46153846153846156,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.46153846153846156,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 382, 'K', 2],[200.0, -1, ',', 4]

LiMn6Sn6
###Large anomalous Hall effect in the kagome ferromagnet LiMn$_6$Sn$_6$|Dong Chen,Congcong Le,Chenguang Fu,Haicheng Lin,Walter Schnelle,Yan Sun,Claudia Felser###
(1711360, 1711364)
 Here, we report the large anomalous Hall effect in the kagomeferromagnet LiMn6Sn6, which has a Curie temperature of 382 K and easyplane along with the kagome lattice.
Featurization terminated normally.
0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.46153846153846156,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.46153846153846156,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 382, 'K', 0],[117.0, -1, ',', 2]

At
###Large anomalous Hall effect in the kagome ferromagnet LiMn$_6$Sn$_6$|Dong Chen,Congcong Le,Chenguang Fu,Haicheng Lin,Walter Schnelle,Yan Sun,Claudia Felser###
(1711398, 1711398)
 At low temperatures, unsaturated positivemagnetoresistance and opposite signs of ordinary Hall coefficient forrhoxz and rhoyx indicate the coexistence of electrons and holes inthe system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 382, 'K', 1],[83.0, -1, ',', 1]

Mn
###Large anomalous Hall effect in the kagome ferromagnet LiMn$_6$Sn$_6$|Dong Chen,Congcong Le,Chenguang Fu,Haicheng Lin,Walter Schnelle,Yan Sun,Claudia Felser###
(1711496, 1711496)
 A large intrinsic anomalous Hall conductivity of 380 Omega-1cm-1, or 0.44 e<missing VAR>2/h<missing VAR> per Mn layer, is observed in sigmaxyA.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 382, 'K', 2],[15.0, -1, ',', 0]

Mn6Sn6
###Large anomalous Hall effect in the kagome ferromagnet LiMn$_6$Sn$_6$|Dong Chen,Congcong Le,Chenguang Fu,Haicheng Lin,Walter Schnelle,Yan Sun,Claudia Felser###
(1711532, 1711535)
 Thisvalue is significantly larger than those in other R<missing VAR>Mn6Sn6 (R<missing VAR>  rareearth elements) kagome compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 382, 'K', 3],[51.0, -1, ',', 1]

K
###Large anomalous Hall effect in the kagome ferromagnet LiMn$_6$Sn$_6$|Dong Chen,Congcong Le,Chenguang Fu,Haicheng Lin,Walter Schnelle,Yan Sun,Claudia Felser###
(1711586, 1711586)
 Band structure calculations show several bandcrossings, including a spin-polarized Dirac point at the K point, close to theFermi energy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[208.0, 382, 'K', 4],[105.0, -1, ',', 2]

LiMn6Sn6
###Large anomalous Hall effect in the kagome ferromagnet LiMn$_6$Sn$_6$|Dong Chen,Congcong Le,Chenguang Fu,Haicheng Lin,Walter Schnelle,Yan Sun,Claudia Felser###
(1711663, 1711667)
 Weattribute the large anomalous Hall effect in LiMn6Sn6 to the bandcrossings closely located near the Fermi energy.
Featurization terminated normally.
0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.46153846153846156,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.46153846153846156,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[285.0, 382, 'K', 6],[182.0, -1, ',', 4]

In
###Smart fingertip sensor for food quality control: fruit maturity assessment with a magnetic device|Maria Carvalho,Pedro Ribeiro,Verónica Romão,Susana Cardoso###
(1711939, 1711939)
 In this paper we demonstrate the useof ciliary sensors in scanning fruits (blueberries and strawberries) indifferent maturation stages.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 0.14, 'mV', 2],[119.0, 0.12, 'mV', 2],[141.0, 0.56, 'mV', 2]

V
###Smart fingertip sensor for food quality control: fruit maturity assessment with a magnetic device|Maria Carvalho,Pedro Ribeiro,Verónica Romão,Susana Cardoso###
(1712077, 1712077)
Less mature fruits exhibited, on average, a highest peak voltage of 0.14 mV forblueberries and 0.12 mV for strawberries, while overripe fruits exhibited 0.58m<missing VAR>V and 0.56 mV, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 0.14, 'mV', 0],[19.0, 0.12, 'mV', 0],[3.0, 0.56, 'mV', 0]

Cr4PtGa17
###Ferromagnetic Cr4PtGa17: A Novel Half-Heusler-Type Compound with a Breathing Pyrochlore Lattice|Xin Gui,Erxi Feng,Huibo Cao,Robert J. Cava###
(1712150, 1712154)
Ferromagnetic Cr4PtGa17 A Novel Half-Heusler-Type Compound with a Breathing Pyrochlore Lattice.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0.7727272727272727,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.045454545454545456,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[350.0, 2, 'K', 5],[390.0, 140, '%', 6],[398.0, 2, 'K', 6]

Cr4PtGa17
###Ferromagnetic Cr4PtGa17: A Novel Half-Heusler-Type Compound with a Breathing Pyrochlore Lattice|Xin Gui,Erxi Feng,Huibo Cao,Robert J. Cava###
(1712213, 1712217)
 We describe the crystal structure and elementary magnetic properties of apreviously unreported ternary intermetallic compound, Cr4PtGa17, whichcrystallizes in a rhombohedral unit cell in the noncentrosymmetric space groupR3m.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0.7727272727272727,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.045454545454545456,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[287.0, 2, 'K', 4],[327.0, 140, '%', 5],[335.0, 2, 'K', 5]

Y
###Ferromagnetic Cr4PtGa17: A Novel Half-Heusler-Type Compound with a Breathing Pyrochlore Lattice|Xin Gui,Erxi Feng,Huibo Cao,Robert J. Cava###
(1712286, 1712286)
 The crystal structure is closely related to those of XYZ half-Heuslercompounds, where X<missing VAR>, Y and Z<missing VAR> are reported to be single elements only, occupyingthree different face-centered cubic sublattices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[218.0, 2, 'K', 3],[258.0, 140, '%', 4],[266.0, 2, 'K', 4]

Cr4PtGa17
###Ferromagnetic Cr4PtGa17: A Novel Half-Heusler-Type Compound with a Breathing Pyrochlore Lattice|Xin Gui,Erxi Feng,Huibo Cao,Robert J. Cava###
(1712330, 1712334)
 The new material, Cr4PtGa17,can be most straightforwardly illustrated by writing the formula as(PtGa2)(Cr4Ga14)Ga (X<missing VAR>PtGa2, Y  Cr4Ga14, Z<missing VAR>  Ga), that is, the X<missing VAR> and Y sitesare occupied by clusters instead of single elements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0.7727272727272727,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.045454545454545456,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[170.0, 2, 'K', 2],[210.0, 140, '%', 3],[218.0, 2, 'K', 3]

(PtGa2)(Cr4Ga14)Ga
###Ferromagnetic Cr4PtGa17: A Novel Half-Heusler-Type Compound with a Breathing Pyrochlore Lattice|Xin Gui,Erxi Feng,Huibo Cao,Robert J. Cava###
(1712359, 1712370)
 The new material, Cr4PtGa17,can be most straightforwardly illustrated by writing the formula as(PtGa2)(Cr4Ga14)Ga (X<missing VAR>PtGa2, Y  Cr4Ga14, Z<missing VAR>  Ga), that is, the X<missing VAR> and Y sitesare occupied by clusters instead of single elements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0.7727272727272727,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.045454545454545456,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 2, 'K', 2],[174.0, 140, '%', 3],[182.0, 2, 'K', 3]

PtGa2
###Ferromagnetic Cr4PtGa17: A Novel Half-Heusler-Type Compound with a Breathing Pyrochlore Lattice|Xin Gui,Erxi Feng,Huibo Cao,Robert J. Cava###
(1712374, 1712376)
 The new material, Cr4PtGa17,can be most straightforwardly illustrated by writing the formula as(PtGa2)(Cr4Ga14)Ga (X<missing VAR>PtGa2, Y  Cr4Ga14, Z<missing VAR>  Ga), that is, the X<missing VAR> and Y sitesare occupied by clusters instead of single elements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 2, 'K', 2],[168.0, 140, '%', 3],[176.0, 2, 'K', 3]

Y
###Ferromagnetic Cr4PtGa17: A Novel Half-Heusler-Type Compound with a Breathing Pyrochlore Lattice|Xin Gui,Erxi Feng,Huibo Cao,Robert J. Cava###
(1712379, 1712379)
 The new material, Cr4PtGa17,can be most straightforwardly illustrated by writing the formula as(PtGa2)(Cr4Ga14)Ga (X<missing VAR>PtGa2, Y  Cr4Ga14, Z<missing VAR>  Ga), that is, the X<missing VAR> and Y sitesare occupied by clusters instead of single elements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 2, 'K', 2],[165.0, 140, '%', 3],[173.0, 2, 'K', 3]

Cr4Ga14
###Ferromagnetic Cr4PtGa17: A Novel Half-Heusler-Type Compound with a Breathing Pyrochlore Lattice|Xin Gui,Erxi Feng,Huibo Cao,Robert J. Cava###
(1712382, 1712385)
 The new material, Cr4PtGa17,can be most straightforwardly illustrated by writing the formula as(PtGa2)(Cr4Ga14)Ga (X<missing VAR>PtGa2, Y  Cr4Ga14, Z<missing VAR>  Ga), that is, the X<missing VAR> and Y sitesare occupied by clusters instead of single elements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2222222222222222,0,0,0,0,0,0,0.7777777777777778,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 2, 'K', 2],[159.0, 140, '%', 3],[167.0, 2, 'K', 3]

Ga
###Ferromagnetic Cr4PtGa17: A Novel Half-Heusler-Type Compound with a Breathing Pyrochlore Lattice|Xin Gui,Erxi Feng,Huibo Cao,Robert J. Cava###
(1712391, 1712391)
 The new material, Cr4PtGa17,can be most straightforwardly illustrated by writing the formula as(PtGa2)(Cr4Ga14)Ga (X<missing VAR>PtGa2, Y  Cr4Ga14, Z<missing VAR>  Ga), that is, the X<missing VAR> and Y sitesare occupied by clusters instead of single elements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 2, 'K', 2],[153.0, 140, '%', 3],[161.0, 2, 'K', 3]

Y
###Ferromagnetic Cr4PtGa17: A Novel Half-Heusler-Type Compound with a Breathing Pyrochlore Lattice|Xin Gui,Erxi Feng,Huibo Cao,Robert J. Cava###
(1712406, 1712406)
 The new material, Cr4PtGa17,can be most straightforwardly illustrated by writing the formula as(PtGa2)(Cr4Ga14)Ga (X<missing VAR>PtGa2, Y  Cr4Ga14, Z<missing VAR>  Ga), that is, the X<missing VAR> and Y sitesare occupied by clusters instead of single elements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 2, 'K', 2],[138.0, 140, '%', 3],[146.0, 2, 'K', 3]

Cr
###Ferromagnetic Cr4PtGa17: A Novel Half-Heusler-Type Compound with a Breathing Pyrochlore Lattice|Xin Gui,Erxi Feng,Huibo Cao,Robert J. Cava###
(1712432, 1712432)
 The magnetic Cr occupies abreathing pyrochlore lattice.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 2, 'K', 1],[112.0, 140, '%', 2],[120.0, 2, 'K', 2]

C
###Ferromagnetic Cr4PtGa17: A Novel Half-Heusler-Type Compound with a Breathing Pyrochlore Lattice|Xin Gui,Erxi Feng,Huibo Cao,Robert J. Cava###
(1712457, 1712457)
 Ferromagnetic ordering is found below T<missing VAR>C 61 K,by both neutron diffraction and magnetometer studies, with a small, saturatedmoment of 0.25 muB/Cr observed at 2 K, making Cr4PtGa17 the firstferromagnetically ordered material with a breathing pyrochlore lattice.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 2, 'K', 0],[87.0, 140, '%', 1],[95.0, 2, 'K', 1]

K
###Ferromagnetic Cr4PtGa17: A Novel Half-Heusler-Type Compound with a Breathing Pyrochlore Lattice|Xin Gui,Erxi Feng,Huibo Cao,Robert J. Cava###
(1712461, 1712461)
 Ferromagnetic ordering is found below T<missing VAR>C 61 K,by both neutron diffraction and magnetometer studies, with a small, saturatedmoment of 0.25 muB/Cr observed at 2 K, making Cr4PtGa17 the firstferromagnetically ordered material with a breathing pyrochlore lattice.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 2, 'K', 0],[83.0, 140, '%', 1],[91.0, 2, 'K', 1]

B/Cr
###Ferromagnetic Cr4PtGa17: A Novel Half-Heusler-Type Compound with a Breathing Pyrochlore Lattice|Xin Gui,Erxi Feng,Huibo Cao,Robert J. Cava###
(1712497, 1712499)
 Ferromagnetic ordering is found below T<missing VAR>C 61 K,by both neutron diffraction and magnetometer studies, with a small, saturatedmoment of 0.25 muB/Cr observed at 2 K, making Cr4PtGa17 the firstferromagnetically ordered material with a breathing pyrochlore lattice.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[5.0, 2, 'K', 0],[45.0, 140, '%', 1],[53.0, 2, 'K', 1]

Cr4PtGa17
###Ferromagnetic Cr4PtGa17: A Novel Half-Heusler-Type Compound with a Breathing Pyrochlore Lattice|Xin Gui,Erxi Feng,Huibo Cao,Robert J. Cava###
(1712509, 1712513)
 Ferromagnetic ordering is found below T<missing VAR>C 61 K,by both neutron diffraction and magnetometer studies, with a small, saturatedmoment of 0.25 muB/Cr observed at 2 K, making Cr4PtGa17 the firstferromagnetically ordered material with a breathing pyrochlore lattice.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0.7727272727272727,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.045454545454545456,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 2, 'K', 0],[31.0, 140, '%', 1],[39.0, 2, 'K', 1]

Cr4PtGa17
###Ferromagnetic Cr4PtGa17: A Novel Half-Heusler-Type Compound with a Breathing Pyrochlore Lattice|Xin Gui,Erxi Feng,Huibo Cao,Robert J. Cava###
(1712593, 1712597)
 The new material,Cr4PtGa17, the first realization of both a half-Heusler-type structure and abreathing pyrochlore lattice, might pave a new way to achieve novel types ofhalf-Heusler compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0.7727272727272727,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.045454545454545456,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 2, 'K', 3],[49.0, 140, '%', 2],[41.0, 2, 'K', 2]

B20
###Spin Hall effect in a spin-1 chiral semimetal|Ke Tang,Yong-Chang Lau,Kenji Nawa,Zhenchao Wen,Qingyi Xiang,Hiroaki Sukegawa,Takeshi Seki,Yoshio Miura,Koki Takanashi,Seiji Mitani###
(1712738, 1712739)
 B20-type CoSi is a prototypal material that accommodates such anexotic quasiparticle.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[394.0, 1, '%', 6]

CoSi
###Spin Hall effect in a spin-1 chiral semimetal|Ke Tang,Yong-Chang Lau,Kenji Nawa,Zhenchao Wen,Qingyi Xiang,Hiroaki Sukegawa,Takeshi Seki,Yoshio Miura,Koki Takanashi,Seiji Mitani###
(1712743, 1712744)
 B20-type CoSi is a prototypal material that accommodates such anexotic quasiparticle.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[389.0, 1, '%', 6]

In
###Spin Hall effect in a spin-1 chiral semimetal|Ke Tang,Yong-Chang Lau,Kenji Nawa,Zhenchao Wen,Qingyi Xiang,Hiroaki Sukegawa,Takeshi Seki,Yoshio Miura,Koki Takanashi,Seiji Mitani###
(1712806, 1712806)
 In this work, we fabricatedB20-CoSi thin films on sapphire c<missing VAR>-plane substrates by magnetron sputtering andstudied the spin Hall effect (SHE) by combining experiments andfirst-principles calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[327.0, 1, '%', 4]

B20
###Spin Hall effect in a spin-1 chiral semimetal|Ke Tang,Yong-Chang Lau,Kenji Nawa,Zhenchao Wen,Qingyi Xiang,Hiroaki Sukegawa,Takeshi Seki,Yoshio Miura,Koki Takanashi,Seiji Mitani###
(1712818, 1712819)
 In this work, we fabricatedB20-CoSi thin films on sapphire c<missing VAR>-plane substrates by magnetron sputtering andstudied the spin Hall effect (SHE) by combining experiments andfirst-principles calculations.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[314.0, 1, '%', 4]

CoSi
###Spin Hall effect in a spin-1 chiral semimetal|Ke Tang,Yong-Chang Lau,Kenji Nawa,Zhenchao Wen,Qingyi Xiang,Hiroaki Sukegawa,Takeshi Seki,Yoshio Miura,Koki Takanashi,Seiji Mitani###
(1712821, 1712822)
 In this work, we fabricatedB20-CoSi thin films on sapphire c<missing VAR>-plane substrates by magnetron sputtering andstudied the spin Hall effect (SHE) by combining experiments andfirst-principles calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[311.0, 1, '%', 4]

SH
###Spin Hall effect in a spin-1 chiral semimetal|Ke Tang,Yong-Chang Lau,Kenji Nawa,Zhenchao Wen,Qingyi Xiang,Hiroaki Sukegawa,Takeshi Seki,Yoshio Miura,Koki Takanashi,Seiji Mitani###
(1712858, 1712859)
 In this work, we fabricatedB20-CoSi thin films on sapphire c<missing VAR>-plane substrates by magnetron sputtering andstudied the spin Hall effect (SHE) by combining experiments andfirst-principles calculations.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[274.0, 1, '%', 4]

SH
###Spin Hall effect in a spin-1 chiral semimetal|Ke Tang,Yong-Chang Lau,Kenji Nawa,Zhenchao Wen,Qingyi Xiang,Hiroaki Sukegawa,Takeshi Seki,Yoshio Miura,Koki Takanashi,Seiji Mitani###
(1712881, 1712882)
 The SHE<missing VAR> of CoSi using CoSi/CoFeB/MgOheterostructures was investigated via spin Hall magnetoresistance and harmonicHall measurements.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[251.0, 1, '%', 3]

CoSi
###Spin Hall effect in a spin-1 chiral semimetal|Ke Tang,Yong-Chang Lau,Kenji Nawa,Zhenchao Wen,Qingyi Xiang,Hiroaki Sukegawa,Takeshi Seki,Yoshio Miura,Koki Takanashi,Seiji Mitani###
(1712887, 1712888)
 The SHE<missing VAR> of CoSi using CoSi/CoFeB/MgOheterostructures was investigated via spin Hall magnetoresistance and harmonicHall measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[245.0, 1, '%', 3]

CoSi/CoFeB/MgO
###Spin Hall effect in a spin-1 chiral semimetal|Ke Tang,Yong-Chang Lau,Kenji Nawa,Zhenchao Wen,Qingyi Xiang,Hiroaki Sukegawa,Takeshi Seki,Yoshio Miura,Koki Takanashi,Seiji Mitani###
(1712892, 1712900)
 The SHE<missing VAR> of CoSi using CoSi/CoFeB/MgOheterostructures was investigated via spin Hall magnetoresistance and harmonicHall measurements.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[233.0, 1, '%', 3]

(SHC)
###Spin Hall effect in a spin-1 chiral semimetal|Ke Tang,Yong-Chang Lau,Kenji Nawa,Zhenchao Wen,Qingyi Xiang,Hiroaki Sukegawa,Takeshi Seki,Yoshio Miura,Koki Takanashi,Seiji Mitani###
(1712946, 1712950)
 First-principles calculations yield an intrinsic spin Hallconductivity (SHC) at the Fermi level that is consistent with the experimentsand reveal its unique Fermi-energy dependence.
Featurization successful!
0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[183.0, 1, '%', 2]

SHC
###Spin Hall effect in a spin-1 chiral semimetal|Ke Tang,Yong-Chang Lau,Kenji Nawa,Zhenchao Wen,Qingyi Xiang,Hiroaki Sukegawa,Takeshi Seki,Yoshio Miura,Koki Takanashi,Seiji Mitani###
(1713031, 1713033)
 Unlike the Dirac and Weylfermion-mediated Hall conductivities that exhibit a peak-like structurecentering around the topological node, SHC of B20-CoSi is odd and crosses zeroat the node with two antisymmetric local extrema of opposite sign situatedbelow and above in energy.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 1, '%', 1]

B20
###Spin Hall effect in a spin-1 chiral semimetal|Ke Tang,Yong-Chang Lau,Kenji Nawa,Zhenchao Wen,Qingyi Xiang,Hiroaki Sukegawa,Takeshi Seki,Yoshio Miura,Koki Takanashi,Seiji Mitani###
(1713037, 1713038)
 Unlike the Dirac and Weylfermion-mediated Hall conductivities that exhibit a peak-like structurecentering around the topological node, SHC of B20-CoSi is odd and crosses zeroat the node with two antisymmetric local extrema of opposite sign situatedbelow and above in energy.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 1, '%', 1]

CoSi
###Spin Hall effect in a spin-1 chiral semimetal|Ke Tang,Yong-Chang Lau,Kenji Nawa,Zhenchao Wen,Qingyi Xiang,Hiroaki Sukegawa,Takeshi Seki,Yoshio Miura,Koki Takanashi,Seiji Mitani###
(1713040, 1713041)
 Unlike the Dirac and Weylfermion-mediated Hall conductivities that exhibit a peak-like structurecentering around the topological node, SHC of B20-CoSi is odd and crosses zeroat the node with two antisymmetric local extrema of opposite sign situatedbelow and above in energy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 1, '%', 1]

Co
###Spin Hall effect in a spin-1 chiral semimetal|Ke Tang,Yong-Chang Lau,Kenji Nawa,Zhenchao Wen,Qingyi Xiang,Hiroaki Sukegawa,Takeshi Seki,Yoshio Miura,Koki Takanashi,Seiji Mitani###
(1713094, 1713094)
 Hybridization between Co d<missing VAR>-Si p<missing VAR> orbitals andspin-orbit coupling are essential for the SHC, despite the small (1%) weightof Si p<missing VAR>-orbital near the Fermi level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 1, '%', 0]

Si
###Spin Hall effect in a spin-1 chiral semimetal|Ke Tang,Yong-Chang Lau,Kenji Nawa,Zhenchao Wen,Qingyi Xiang,Hiroaki Sukegawa,Takeshi Seki,Yoshio Miura,Koki Takanashi,Seiji Mitani###
(1713098, 1713098)
 Hybridization between Co d<missing VAR>-Si p<missing VAR> orbitals andspin-orbit coupling are essential for the SHC, despite the small (1%) weightof Si p<missing VAR>-orbital near the Fermi level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 1, '%', 0]

SHC
###Spin Hall effect in a spin-1 chiral semimetal|Ke Tang,Yong-Chang Lau,Kenji Nawa,Zhenchao Wen,Qingyi Xiang,Hiroaki Sukegawa,Takeshi Seki,Yoshio Miura,Koki Takanashi,Seiji Mitani###
(1713121, 1713123)
 Hybridization between Co d<missing VAR>-Si p<missing VAR> orbitals andspin-orbit coupling are essential for the SHC, despite the small (1%) weightof Si p<missing VAR>-orbital near the Fermi level.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 1, '%', 0]

Si
###Spin Hall effect in a spin-1 chiral semimetal|Ke Tang,Yong-Chang Lau,Kenji Nawa,Zhenchao Wen,Qingyi Xiang,Hiroaki Sukegawa,Takeshi Seki,Yoshio Miura,Koki Takanashi,Seiji Mitani###
(1713142, 1713142)
 Hybridization between Co d<missing VAR>-Si p<missing VAR> orbitals andspin-orbit coupling are essential for the SHC, despite the small (1%) weightof Si p<missing VAR>-orbital near the Fermi level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 1, '%', 0]

Sn
###Spin-orbit torques and magnetotransport properties of $α$-Sn and $β$-Sn heterostructures|Federico Binda,Can Onur Avci,Santos Francisco Alvarado,Paul Noël,Charles-Henri Lambert,Pietro Gambardella###
(1713248, 1713248)
Spin-orbit torques and magnetotransport properties of -Sn and -Sn heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[267.0, 0.12, 'and', 5],[269.0, 0.18, ',', 5]

Sn
###Spin-orbit torques and magnetotransport properties of $α$-Sn and $β$-Sn heterostructures|Federico Binda,Can Onur Avci,Santos Francisco Alvarado,Paul Noël,Charles-Henri Lambert,Pietro Gambardella###
(1713253, 1713253)
Spin-orbit torques and magnetotransport properties of -Sn and -Sn heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[262.0, 0.12, 'and', 5],[264.0, 0.18, ',', 5]

Sn
###Spin-orbit torques and magnetotransport properties of $α$-Sn and $β$-Sn heterostructures|Federico Binda,Can Onur Avci,Santos Francisco Alvarado,Paul Noël,Charles-Henri Lambert,Pietro Gambardella###
(1713322, 1713322)
 Most topological insulators consideredto date are binary or ternary compounds, with the exception of alpha-Sn.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[193.0, 0.12, 'and', 3],[195.0, 0.18, ',', 3]

Sn
###Spin-orbit torques and magnetotransport properties of $α$-Sn and $β$-Sn heterostructures|Federico Binda,Can Onur Avci,Santos Francisco Alvarado,Paul Noël,Charles-Henri Lambert,Pietro Gambardella###
(1713367, 1713367)
Here we report a comprehensive characterization of the growth, magnetotransportproperties, and current-induced spin-orbit torques of alpha-Sn andbeta-Sn-based ferromagnetic heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 0.12, 'and', 2],[150.0, 0.18, ',', 2]

Sn
###Spin-orbit torques and magnetotransport properties of $α$-Sn and $β$-Sn heterostructures|Federico Binda,Can Onur Avci,Santos Francisco Alvarado,Paul Noël,Charles-Henri Lambert,Pietro Gambardella###
(1713374, 1713374)
Here we report a comprehensive characterization of the growth, magnetotransportproperties, and current-induced spin-orbit torques of alpha-Sn andbeta-Sn-based ferromagnetic heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 0.12, 'and', 2],[143.0, 0.18, ',', 2]

Sn
###Spin-orbit torques and magnetotransport properties of $α$-Sn and $β$-Sn heterostructures|Federico Binda,Can Onur Avci,Santos Francisco Alvarado,Paul Noël,Charles-Henri Lambert,Pietro Gambardella###
(1713391, 1713391)
 We show that alpha-Sn grownwith a Bi surfactant on CdTe(001) promotes large spin-orbit torques in aferromagnetic FeCo layer at room temperature, comparable to Pt, whereasalpha-Sn grown without Bi surfactant and the non-topological phase,beta-Sn, induce lower torques.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 0.12, 'and', 1],[126.0, 0.18, ',', 1]

Bi
###Spin-orbit torques and magnetotransport properties of $α$-Sn and $β$-Sn heterostructures|Federico Binda,Can Onur Avci,Santos Francisco Alvarado,Paul Noël,Charles-Henri Lambert,Pietro Gambardella###
(1713400, 1713400)
 We show that alpha-Sn grownwith a Bi surfactant on CdTe(001) promotes large spin-orbit torques in aferromagnetic FeCo layer at room temperature, comparable to Pt, whereasalpha-Sn grown without Bi surfactant and the non-topological phase,beta-Sn, induce lower torques.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 0.12, 'and', 1],[117.0, 0.18, ',', 1]

FeCo
###Spin-orbit torques and magnetotransport properties of $α$-Sn and $β$-Sn heterostructures|Federico Binda,Can Onur Avci,Santos Francisco Alvarado,Paul Noël,Charles-Henri Lambert,Pietro Gambardella###
(1713429, 1713430)
 We show that alpha-Sn grownwith a Bi surfactant on CdTe(001) promotes large spin-orbit torques in aferromagnetic FeCo layer at room temperature, comparable to Pt, whereasalpha-Sn grown without Bi surfactant and the non-topological phase,beta-Sn, induce lower torques.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 0.12, 'and', 1],[87.0, 0.18, ',', 1]

Pt
###Spin-orbit torques and magnetotransport properties of $α$-Sn and $β$-Sn heterostructures|Federico Binda,Can Onur Avci,Santos Francisco Alvarado,Paul Noël,Charles-Henri Lambert,Pietro Gambardella###
(1713445, 1713445)
 We show that alpha-Sn grownwith a Bi surfactant on CdTe(001) promotes large spin-orbit torques in aferromagnetic FeCo layer at room temperature, comparable to Pt, whereasalpha-Sn grown without Bi surfactant and the non-topological phase,beta-Sn, induce lower torques.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 0.12, 'and', 1],[72.0, 0.18, ',', 1]

Sn
###Spin-orbit torques and magnetotransport properties of $α$-Sn and $β$-Sn heterostructures|Federico Binda,Can Onur Avci,Santos Francisco Alvarado,Paul Noël,Charles-Henri Lambert,Pietro Gambardella###
(1713453, 1713453)
 We show that alpha-Sn grownwith a Bi surfactant on CdTe(001) promotes large spin-orbit torques in aferromagnetic FeCo layer at room temperature, comparable to Pt, whereasalpha-Sn grown without Bi surfactant and the non-topological phase,beta-Sn, induce lower torques.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 0.12, 'and', 1],[64.0, 0.18, ',', 1]

Bi
###Spin-orbit torques and magnetotransport properties of $α$-Sn and $β$-Sn heterostructures|Federico Binda,Can Onur Avci,Santos Francisco Alvarado,Paul Noël,Charles-Henri Lambert,Pietro Gambardella###
(1713459, 1713459)
 We show that alpha-Sn grownwith a Bi surfactant on CdTe(001) promotes large spin-orbit torques in aferromagnetic FeCo layer at room temperature, comparable to Pt, whereasalpha-Sn grown without Bi surfactant and the non-topological phase,beta-Sn, induce lower torques.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 0.12, 'and', 1],[58.0, 0.18, ',', 1]

Sn
###Spin-orbit torques and magnetotransport properties of $α$-Sn and $β$-Sn heterostructures|Federico Binda,Can Onur Avci,Santos Francisco Alvarado,Paul Noël,Charles-Henri Lambert,Pietro Gambardella###
(1713477, 1713477)
 We show that alpha-Sn grownwith a Bi surfactant on CdTe(001) promotes large spin-orbit torques in aferromagnetic FeCo layer at room temperature, comparable to Pt, whereasalpha-Sn grown without Bi surfactant and the non-topological phase,beta-Sn, induce lower torques.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 0.12, 'and', 1],[40.0, 0.18, ',', 1]

Sn
###Spin-orbit torques and magnetotransport properties of $α$-Sn and $β$-Sn heterostructures|Federico Binda,Can Onur Avci,Santos Francisco Alvarado,Paul Noël,Charles-Henri Lambert,Pietro Gambardella###
(1713508, 1713508)
 The dampinglike and fieldlike spin-orbittorque efficiency in alpha-Sn with Bi are 0.12 and 0.18, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 0.12, 'and', 0],[9.0, 0.18, ',', 0]

Bi
###Spin-orbit torques and magnetotransport properties of $α$-Sn and $β$-Sn heterostructures|Federico Binda,Can Onur Avci,Santos Francisco Alvarado,Paul Noël,Charles-Henri Lambert,Pietro Gambardella###
(1713512, 1713512)
 The dampinglike and fieldlike spin-orbittorque efficiency in alpha-Sn with Bi are 0.12 and 0.18, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 0.12, 'and', 0],[5.0, 0.18, ',', 0]

Sn
###Spin-orbit torques and magnetotransport properties of $α$-Sn and $β$-Sn heterostructures|Federico Binda,Can Onur Avci,Santos Francisco Alvarado,Paul Noël,Charles-Henri Lambert,Pietro Gambardella###
(1713535, 1713535)
Further, we show that alpha-Sn grown with and without Bi presents a spinHall-like magnetoresistance comparable to that found in heavy metal/ferromagnetbilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 0.12, 'and', 1],[18.0, 0.18, ',', 1]

Bi
###Spin-orbit torques and magnetotransport properties of $α$-Sn and $β$-Sn heterostructures|Federico Binda,Can Onur Avci,Santos Francisco Alvarado,Paul Noël,Charles-Henri Lambert,Pietro Gambardella###
(1713545, 1713545)
Further, we show that alpha-Sn grown with and without Bi presents a spinHall-like magnetoresistance comparable to that found in heavy metal/ferromagnetbilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 0.12, 'and', 1],[28.0, 0.18, ',', 1]

Sn
###Spin-orbit torques and magnetotransport properties of $α$-Sn and $β$-Sn heterostructures|Federico Binda,Can Onur Avci,Santos Francisco Alvarado,Paul Noël,Charles-Henri Lambert,Pietro Gambardella###
(1713605, 1713605)
 Our work demonstrates direct and efficient charge-to-spin conversionin alpha-Sn ferromagnetic heterostructures, showing that alpha-Sn is apromising material for current-induced magnetization control in spintronicdevices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 0.12, 'and', 2],[88.0, 0.18, ',', 2]

Sn
###Spin-orbit torques and magnetotransport properties of $α$-Sn and $β$-Sn heterostructures|Federico Binda,Can Onur Avci,Santos Francisco Alvarado,Paul Noël,Charles-Henri Lambert,Pietro Gambardella###
(1713618, 1713618)
 Our work demonstrates direct and efficient charge-to-spin conversionin alpha-Sn ferromagnetic heterostructures, showing that alpha-Sn is apromising material for current-induced magnetization control in spintronicdevices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 0.12, 'and', 2],[101.0, 0.18, ',', 2]

Nb0.20Bi2Se3
###Anisotropic Upper Critical Field, Seebeck and Nernst Coefficient in Nb0.20Bi2Se3 Topological Superconductor|Shailja Sharma,C. S. Yadav###
(1713674, 1713679)
Anisotropic Upper Critical Field, Seebeck and Nernst Coefficient in Nb0.20Bi2Se3 Topological Superconductor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5769230769230769,0,0,0,0,0,0,0.038461538461538464,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3846153846153846,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nb
###Anisotropic Upper Critical Field, Seebeck and Nernst Coefficient in Nb0.20Bi2Se3 Topological Superconductor|Shailja Sharma,C. S. Yadav###
(1713719, 1713719)
 We present the magneto-transport and the thermoelectric (Seebeck and Nernstcoefficient) studies of the Nb-doped Bi2Se3 topological superconductor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Se3
###Anisotropic Upper Critical Field, Seebeck and Nernst Coefficient in Nb0.20Bi2Se3 Topological Superconductor|Shailja Sharma,C. S. Yadav###
(1713723, 1713726)
 We present the magneto-transport and the thermoelectric (Seebeck and Nernstcoefficient) studies of the Nb-doped Bi2Se3 topological superconductor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nb0.2Bi2Se3
###Anisotropic Upper Critical Field, Seebeck and Nernst Coefficient in Nb0.20Bi2Se3 Topological Superconductor|Shailja Sharma,C. S. Yadav###
(1713879, 1713884)
 The estimatedvalue of the carrier concentration ( 1019 cm-3) for Nb0.2Bi2Se3 is one orderlarger than for Bi2Se3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5769230769230769,0,0,0,0,0,0,0.038461538461538464,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3846153846153846,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Se3
###Anisotropic Upper Critical Field, Seebeck and Nernst Coefficient in Nb0.20Bi2Se3 Topological Superconductor|Shailja Sharma,C. S. Yadav###
(1713899, 1713902)
 The estimatedvalue of the carrier concentration ( 1019 cm-3) for Nb0.2Bi2Se3 is one orderlarger than for Bi2Se3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nb
###Anisotropic Upper Critical Field, Seebeck and Nernst Coefficient in Nb0.20Bi2Se3 Topological Superconductor|Shailja Sharma,C. S. Yadav###
(1713909, 1713909)
 Doping of Nb shows a significant decrease in theSeebeck coefficient value and the estimated Fermi temperature of thethree-dimensional Fermi surface at the centre of Brillouin zone in thezero-temperature limit enhances by 4 times in comparison to pristine Bi2Se3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Se3
###Anisotropic Upper Critical Field, Seebeck and Nernst Coefficient in Nb0.20Bi2Se3 Topological Superconductor|Shailja Sharma,C. S. Yadav###
(1713992, 1713995)
 Doping of Nb shows a significant decrease in theSeebeck coefficient value and the estimated Fermi temperature of thethree-dimensional Fermi surface at the centre of Brillouin zone in thezero-temperature limit enhances by 4 times in comparison to pristine Bi2Se3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Anisotropic Upper Critical Field, Seebeck and Nernst Coefficient in Nb0.20Bi2Se3 Topological Superconductor|Shailja Sharma,C. S. Yadav###
(1714016, 1714016)
We have observed a large value (2.3 micro V K-1 T<missing VAR>-1) of Nernst coefficient forBi2Se3 at room temperature which decreases with Nb doping ( 0.5 micro V K-1T<missing VAR>-1).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Anisotropic Upper Critical Field, Seebeck and Nernst Coefficient in Nb0.20Bi2Se3 Topological Superconductor|Shailja Sharma,C. S. Yadav###
(1714018, 1714018)
We have observed a large value (2.3 micro V K-1 T<missing VAR>-1) of Nernst coefficient forBi2Se3 at room temperature which decreases with Nb doping ( 0.5 micro V K-1T<missing VAR>-1).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Se3
###Anisotropic Upper Critical Field, Seebeck and Nernst Coefficient in Nb0.20Bi2Se3 Topological Superconductor|Shailja Sharma,C. S. Yadav###
(1714036, 1714039)
We have observed a large value (2.3 micro V K-1 T<missing VAR>-1) of Nernst coefficient forBi2Se3 at room temperature which decreases with Nb doping ( 0.5 micro V K-1T<missing VAR>-1).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nb
###Anisotropic Upper Critical Field, Seebeck and Nernst Coefficient in Nb0.20Bi2Se3 Topological Superconductor|Shailja Sharma,C. S. Yadav###
(1714053, 1714053)
We have observed a large value (2.3 micro V K-1 T<missing VAR>-1) of Nernst coefficient forBi2Se3 at room temperature which decreases with Nb doping ( 0.5 micro V K-1T<missing VAR>-1).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Anisotropic Upper Critical Field, Seebeck and Nernst Coefficient in Nb0.20Bi2Se3 Topological Superconductor|Shailja Sharma,C. S. Yadav###
(1714063, 1714063)
We have observed a large value (2.3 micro V K-1 T<missing VAR>-1) of Nernst coefficient forBi2Se3 at room temperature which decreases with Nb doping ( 0.5 micro V K-1T<missing VAR>-1).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Anisotropic Upper Critical Field, Seebeck and Nernst Coefficient in Nb0.20Bi2Se3 Topological Superconductor|Shailja Sharma,C. S. Yadav###
(1714065, 1714065)
We have observed a large value (2.3 micro V K-1 T<missing VAR>-1) of Nernst coefficient forBi2Se3 at room temperature which decreases with Nb doping ( 0.5 micro V K-1T<missing VAR>-1).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ReO3
###Singular angular magnetoresistance and sharp resonant features in a high-mobility metal with open orbits, ReO3|Nicholas P. Quirk,Loi T. Nguyen,Jiayi Hu,R. J. Cava,N. P. Ong###
(1714115, 1714117)
Singular angular magnetoresistance and sharp resonant features in a high-mobility metal with open orbits, ReO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 90, ',', 1],[53.0, 2, 'K', 1],[120.0, 9, 'T', 3],[204.0, 40.0, 'However', 4],[248.0, 8.0, 'Using', 4]

ReO3
###Singular angular magnetoresistance and sharp resonant features in a high-mobility metal with open orbits, ReO3|Nicholas P. Quirk,Loi T. Nguyen,Jiayi Hu,R. J. Cava,N. P. Ong###
(1714149, 1714151)
 We report high-resolution angular magnetoresistance (AMR) experimentsperformed on crystals of ReO3 with high mobility (90,000 cm2/Vs at 2 K)and extremely low residual resistivity (5-8 n<missing VAR>Omegacm).
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 90, ',', 0],[19.0, 2, 'K', 0],[86.0, 9, 'T', 2],[170.0, 40.0, 'However', 3],[214.0, 8.0, 'Using', 3]

B
###Singular angular magnetoresistance and sharp resonant features in a high-mobility metal with open orbits, ReO3|Nicholas P. Quirk,Loi T. Nguyen,Jiayi Hu,R. J. Cava,N. P. Ong###
(1714235, 1714235)
 The resistivityrhoxx in a magnetic field B  9 T displays a singular pattern ofbehavior.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 90, ',', 2],[65.0, 2, 'K', 2],[2.0, 9, 'T', 0],[86.0, 40.0, 'However', 1],[130.0, 8.0, 'Using', 1]

B
###Singular angular magnetoresistance and sharp resonant features in a high-mobility metal with open orbits, ReO3|Nicholas P. Quirk,Loi T. Nguyen,Jiayi Hu,R. J. Cava,N. P. Ong###
(1714267, 1714267)
 With bf E<missing VAR>parallel hatx<missing VAR> and bf B initiallyparallelbfhatz<missing VAR>, tilting bf B in the longitudinal kz-kx planeleads to a steep decrease in rhoxx by a factor of 40. However, if bf Bis tilted in the transverse ky-kz plane, rhoxx increases steeply bya factor of 8. Using the Shockley tube integral approach, we show that, inReO3, the singular behavior results from the rapid conversion of closed toopen orbits, resulting in opposite signs for AMR in orthogonal planes.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 90, ',', 3],[97.0, 2, 'K', 3],[30.0, 9, 'T', 1],[54.0, 40.0, 'However', 0],[98.0, 8.0, 'Using', 0]

B
###Singular angular magnetoresistance and sharp resonant features in a high-mobility metal with open orbits, ReO3|Nicholas P. Quirk,Loi T. Nguyen,Jiayi Hu,R. J. Cava,N. P. Ong###
(1714282, 1714282)
 With bf E<missing VAR>parallel hatx<missing VAR> and bf B initiallyparallelbfhatz<missing VAR>, tilting bf B in the longitudinal kz-kx planeleads to a steep decrease in rhoxx by a factor of 40. However, if bf Bis tilted in the transverse ky-kz plane, rhoxx increases steeply bya factor of 8. Using the Shockley tube integral approach, we show that, inReO3, the singular behavior results from the rapid conversion of closed toopen orbits, resulting in opposite signs for AMR in orthogonal planes.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 90, ',', 3],[112.0, 2, 'K', 3],[45.0, 9, 'T', 1],[39.0, 40.0, 'However', 0],[83.0, 8.0, 'Using', 0]

B
###Singular angular magnetoresistance and sharp resonant features in a high-mobility metal with open orbits, ReO3|Nicholas P. Quirk,Loi T. Nguyen,Jiayi Hu,R. J. Cava,N. P. Ong###
(1714328, 1714328)
 With bf E<missing VAR>parallel hatx<missing VAR> and bf B initiallyparallelbfhatz<missing VAR>, tilting bf B in the longitudinal kz-kx planeleads to a steep decrease in rhoxx by a factor of 40. However, if bf Bis tilted in the transverse ky-kz plane, rhoxx increases steeply bya factor of 8. Using the Shockley tube integral approach, we show that, inReO3, the singular behavior results from the rapid conversion of closed toopen orbits, resulting in opposite signs for AMR in orthogonal planes.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[168.0, 90, ',', 3],[158.0, 2, 'K', 3],[91.0, 9, 'T', 1],[7.0, 40.0, 'However', 0],[37.0, 8.0, 'Using', 0]

ReO3
###Singular angular magnetoresistance and sharp resonant features in a high-mobility metal with open orbits, ReO3|Nicholas P. Quirk,Loi T. Nguyen,Jiayi Hu,R. J. Cava,N. P. Ong###
(1714388, 1714390)
 With bf E<missing VAR>parallel hatx<missing VAR> and bf B initiallyparallelbfhatz<missing VAR>, tilting bf B in the longitudinal kz-kx planeleads to a steep decrease in rhoxx by a factor of 40. However, if bf Bis tilted in the transverse ky-kz plane, rhoxx increases steeply bya factor of 8. Using the Shockley tube integral approach, we show that, inReO3, the singular behavior results from the rapid conversion of closed toopen orbits, resulting in opposite signs for AMR in orthogonal planes.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[228.0, 90, ',', 3],[218.0, 2, 'K', 3],[151.0, 9, 'T', 1],[67.0, 40.0, 'However', 0],[23.0, 8.0, 'Using', 0]

F
###Singular angular magnetoresistance and sharp resonant features in a high-mobility metal with open orbits, ReO3|Nicholas P. Quirk,Loi T. Nguyen,Jiayi Hu,R. J. Cava,N. P. Ong###
(1714547, 1714547)
 Also, the completion angle gammac<missing VAR> detected inthe AMR is shown to be an intrinsic geometric feature that provides a new wayto measure the Fermi radius k<missing VAR>F.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[387.0, 90, ',', 5],[377.0, 2, 'K', 5],[310.0, 9, 'T', 3],[226.0, 40.0, 'However', 2],[182.0, 8.0, 'Using', 2]

YbB12
###Topological surface conduction in Kondo insulator YbB$_{12}$|Y. Sato,Z. Xiang,Y. Kasahara,S. Kasahara,Lu Chen,C. Tinsman,F. Iga,J. Singleton,N. L. Nair,N. Maksimovic,J. G. Analytis,Lu Li,Y. Matsuda###
(1714626, 1714628)
Topological surface conduction in Kondo insulator YbB12.
Featurization terminated normally.
0,0,0,0,0.9230769230769231,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[362.0, 50, 'T', 8]

YbB12
###Topological surface conduction in Kondo insulator YbB$_{12}$|Y. Sato,Z. Xiang,Y. Kasahara,S. Kasahara,Lu Chen,C. Tinsman,F. Iga,J. Singleton,N. L. Nair,N. Maksimovic,J. G. Analytis,Lu Li,Y. Matsuda###
(1714752, 1714754)
 Here, to investigate the surface electronic state of a prototypeKondo insulator YbB12, we measured transport properties of single crystalsand microstructures.
Featurization terminated normally.
0,0,0,0,0.9230769230769231,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[236.0, 50, 'T', 5]

In
###Topological surface conduction in Kondo insulator YbB$_{12}$|Y. Sato,Z. Xiang,Y. Kasahara,S. Kasahara,Lu Chen,C. Tinsman,F. Iga,J. Singleton,N. L. Nair,N. Maksimovic,J. G. Analytis,Lu Li,Y. Matsuda###
(1714777, 1714777)
 In all samples, the temperature dependence of theelectrical resistivity is insulating at high temperatures and the resistivityexhibits a plateau at low temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[213.0, 50, 'T', 4]

YbB12
###Topological surface conduction in Kondo insulator YbB$_{12}$|Y. Sato,Z. Xiang,Y. Kasahara,S. Kasahara,Lu Chen,C. Tinsman,F. Iga,J. Singleton,N. L. Nair,N. Maksimovic,J. G. Analytis,Lu Li,Y. Matsuda###
(1714880, 1714882)
 The magnitude of the plateau valuedecreases with reducing sample thickness, which is quantitatively consistentwith the surface electronic conduction in the bulk insulating YbB12.
Featurization terminated normally.
0,0,0,0,0.9230769230769231,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 50, 'T', 3]

YbB12
###Topological surface conduction in Kondo insulator YbB$_{12}$|Y. Sato,Z. Xiang,Y. Kasahara,S. Kasahara,Lu Chen,C. Tinsman,F. Iga,J. Singleton,N. L. Nair,N. Maksimovic,J. G. Analytis,Lu Li,Y. Matsuda###
(1714948, 1714950)
 These results are consistent withthe presence of topologically protected surface state, suggesting thatYbB12 is a candidate material of the topological Kondo insulator.
Featurization terminated normally.
0,0,0,0,0.9230769230769231,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 50, 'T', 1]

H
###Topological surface conduction in Kondo insulator YbB$_{12}$|Y. Sato,Z. Xiang,Y. Kasahara,S. Kasahara,Lu Chen,C. Tinsman,F. Iga,J. Singleton,N. L. Nair,N. Maksimovic,J. G. Analytis,Lu Li,Y. Matsuda###
(1714988, 1714988)
 The highfield resistivity measurements up to mu0H  50 T of the microstructuresprovide supporting evidence that the quantum oscillations of the resistivity inYbB12 occurs in the insulating bulk.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 50, 'T', 0]

YbB12
###Topological surface conduction in Kondo insulator YbB$_{12}$|Y. Sato,Z. Xiang,Y. Kasahara,S. Kasahara,Lu Chen,C. Tinsman,F. Iga,J. Singleton,N. L. Nair,N. Maksimovic,J. G. Analytis,Lu Li,Y. Matsuda###
(1715022, 1715024)
 The highfield resistivity measurements up to mu0H  50 T of the microstructuresprovide supporting evidence that the quantum oscillations of the resistivity inYbB12 occurs in the insulating bulk.
Featurization terminated normally.
0,0,0,0,0.9230769230769231,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 50, 'T', 0]

Mn1.4Fe3.6Si3
###Negative thermal expansion and itinerant ferromagnetism in Mn$_{1.4}$Fe$_{3.6}$Si$_{3}$|Vikram Singh,R. Nath###
(1715059, 1715064)
Negative thermal expansion and itinerant ferromagnetism in Mn1.4Fe3.6Si3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.375,0,0,0,0,0,0,0,0,0,0,0.175,0.45,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[235.0, -3, '%', 4],[240.0, 80, 'kOe', 4]

Mn1.4Fe3.6Si3
###Negative thermal expansion and itinerant ferromagnetism in Mn$_{1.4}$Fe$_{3.6}$Si$_{3}$|Vikram Singh,R. Nath###
(1715111, 1715116)
 We report the thermal expansion, critical behavior, magnetocaloric effect(MCE), and magnetoresistance (MR) on the polycrystallineMn1.4Fe3.6Si3 compound around the ferromagnetic transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.375,0,0,0,0,0,0,0,0,0,0,0.175,0.45,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[183.0, -3, '%', 3],[188.0, 80, 'kOe', 3]

V
###Negative thermal expansion and itinerant ferromagnetism in Mn$_{1.4}$Fe$_{3.6}$Si$_{3}$|Vikram Singh,R. Nath###
(1715146, 1715146)
 Alarge negative volume thermal expansion (alpharm Vsim -20 times10-6 K-1) is observed across the transition temperature with a stronganisotropic variation of lattice parameters in the ab-plane.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, -3, '%', 2],[158.0, 80, 'kOe', 2]

K
###Negative thermal expansion and itinerant ferromagnetism in Mn$_{1.4}$Fe$_{3.6}$Si$_{3}$|Vikram Singh,R. Nath###
(1715159, 1715159)
 Alarge negative volume thermal expansion (alpharm Vsim -20 times10-6 K-1) is observed across the transition temperature with a stronganisotropic variation of lattice parameters in the ab-plane.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, -3, '%', 2],[145.0, 80, 'kOe', 2]

S
###Negative thermal expansion and itinerant ferromagnetism in Mn$_{1.4}$Fe$_{3.6}$Si$_{3}$|Vikram Singh,R. Nath###
(1715252, 1715252)
 The anisotropicmagnetoelasticity arises from the competition between magnetic ordering andstructural deformation which could be responsible for the large MCE (DeltaSrm m<missing VAR> simeq -6 J<missing VAR>/Kg-K) across the magnetic transition in this compound.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, -3, '%', 1],[52.0, 80, 'kOe', 1]

K
###Negative thermal expansion and itinerant ferromagnetism in Mn$_{1.4}$Fe$_{3.6}$Si$_{3}$|Vikram Singh,R. Nath###
(1715266, 1715266)
 The anisotropicmagnetoelasticity arises from the competition between magnetic ordering andstructural deformation which could be responsible for the large MCE (DeltaSrm m<missing VAR> simeq -6 J<missing VAR>/Kg-K) across the magnetic transition in this compound.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, -3, '%', 1],[38.0, 80, 'kOe', 1]

FeSe1-x
###Magnetic-Field-Induced Spin Nematicity in FeSe1-xSx and FeSe1-yTey Superconductor Systems|Shaobo Liu,Jie Yuan,Sheng Ma,Zouyouwei Lu,Yuhang Zhang,Mingwei Ma,Hua Zhang,Kui Jin,Li Yu,Fang Zhou,Xiaoli Dong,Zhongxian Zhao###
(1715562, 1715566)
Magnetic-Field-Induced Spin Nematicity in FeSe1-xSx and FeSe1-yTey Superconductor Systems.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[65.0, 0, ',', 1],[68.0, 0.07, ',', 1],[70.0, 0.13, 'and', 1],[89.0, 0.06, ',', 1],[91.0, 0.61, 'and', 1],[109.0, 9, 'T', 1]

FeSe1-y
###Magnetic-Field-Induced Spin Nematicity in FeSe1-xSx and FeSe1-yTey Superconductor Systems|Shaobo Liu,Jie Yuan,Sheng Ma,Zouyouwei Lu,Yuhang Zhang,Mingwei Ma,Hua Zhang,Kui Jin,Li Yu,Fang Zhou,Xiaoli Dong,Zhongxian Zhao###
(1715571, 1715575)
Magnetic-Field-Induced Spin Nematicity in FeSe1-xSx and FeSe1-yTey Superconductor Systems.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[56.0, 0, ',', 1],[59.0, 0.07, ',', 1],[61.0, 0.13, 'and', 1],[80.0, 0.06, ',', 1],[82.0, 0.61, 'and', 1],[100.0, 9, 'T', 1]

FeSe1-x
###Magnetic-Field-Induced Spin Nematicity in FeSe1-xSx and FeSe1-yTey Superconductor Systems|Shaobo Liu,Jie Yuan,Sheng Ma,Zouyouwei Lu,Yuhang Zhang,Mingwei Ma,Hua Zhang,Kui Jin,Li Yu,Fang Zhou,Xiaoli Dong,Zhongxian Zhao###
(1715620, 1715624)
 The angular-dependent magnetoresistance (AMR) of the ab plane is measured onthe single crystals of FeSe1-xSx (x<missing VAR>  0, 0.07, 0.13 and 1) and FeSe1-yTey (y<missing VAR> 0.06, 0.61 and 1) at various temperatures under fields up to 9 T.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[7.0, 0, ',', 0],[10.0, 0.07, ',', 0],[12.0, 0.13, 'and', 0],[31.0, 0.06, ',', 0],[33.0, 0.61, 'and', 0],[51.0, 9, 'T', 0]

FeSe1-y
###Magnetic-Field-Induced Spin Nematicity in FeSe1-xSx and FeSe1-yTey Superconductor Systems|Shaobo Liu,Jie Yuan,Sheng Ma,Zouyouwei Lu,Yuhang Zhang,Mingwei Ma,Hua Zhang,Kui Jin,Li Yu,Fang Zhou,Xiaoli Dong,Zhongxian Zhao###
(1715643, 1715647)
 The angular-dependent magnetoresistance (AMR) of the ab plane is measured onthe single crystals of FeSe1-xSx (x<missing VAR>  0, 0.07, 0.13 and 1) and FeSe1-yTey (y<missing VAR> 0.06, 0.61 and 1) at various temperatures under fields up to 9 T.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[12.0, 0, ',', 0],[9.0, 0.07, ',', 0],[7.0, 0.13, 'and', 0],[8.0, 0.06, ',', 0],[10.0, 0.61, 'and', 0],[28.0, 9, 'T', 0]

FeSe1-x
###Magnetic-Field-Induced Spin Nematicity in FeSe1-xSx and FeSe1-yTey Superconductor Systems|Shaobo Liu,Jie Yuan,Sheng Ma,Zouyouwei Lu,Yuhang Zhang,Mingwei Ma,Hua Zhang,Kui Jin,Li Yu,Fang Zhou,Xiaoli Dong,Zhongxian Zhao###
(1715779, 1715783)
 Thismagnetically polarized spin nematicity is found to be ubiquitous in theisoelectronic FeSe1-xSx and FeSe1-yTey systems, no matter whether the sampleshows an electronic nematic order at Ts < Tsn, or an antiferromagnetic order atT<missing VAR>N < Tsn, or neither order.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[148.0, 0, ',', 2],[145.0, 0.07, ',', 2],[143.0, 0.13, 'and', 2],[124.0, 0.06, ',', 2],[122.0, 0.61, 'and', 2],[104.0, 9, 'T', 2]

FeSe1-y
###Magnetic-Field-Induced Spin Nematicity in FeSe1-xSx and FeSe1-yTey Superconductor Systems|Shaobo Liu,Jie Yuan,Sheng Ma,Zouyouwei Lu,Yuhang Zhang,Mingwei Ma,Hua Zhang,Kui Jin,Li Yu,Fang Zhou,Xiaoli Dong,Zhongxian Zhao###
(1715788, 1715792)
 Thismagnetically polarized spin nematicity is found to be ubiquitous in theisoelectronic FeSe1-xSx and FeSe1-yTey systems, no matter whether the sampleshows an electronic nematic order at Ts < Tsn, or an antiferromagnetic order atT<missing VAR>N < Tsn, or neither order.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[157.0, 0, ',', 2],[154.0, 0.07, ',', 2],[152.0, 0.13, 'and', 2],[133.0, 0.06, ',', 2],[131.0, 0.61, 'and', 2],[113.0, 9, 'T', 2]

N
###Magnetic-Field-Induced Spin Nematicity in FeSe1-xSx and FeSe1-yTey Superconductor Systems|Shaobo Liu,Jie Yuan,Sheng Ma,Zouyouwei Lu,Yuhang Zhang,Mingwei Ma,Hua Zhang,Kui Jin,Li Yu,Fang Zhou,Xiaoli Dong,Zhongxian Zhao###
(1715840, 1715840)
 Thismagnetically polarized spin nematicity is found to be ubiquitous in theisoelectronic FeSe1-xSx and FeSe1-yTey systems, no matter whether the sampleshows an electronic nematic order at Ts < Tsn, or an antiferromagnetic order atT<missing VAR>N < Tsn, or neither order.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[209.0, 0, ',', 2],[206.0, 0.07, ',', 2],[204.0, 0.13, 'and', 2],[185.0, 0.06, ',', 2],[183.0, 0.61, 'and', 2],[165.0, 9, 'T', 2]

FeSe1-x
###Magnetic-Field-Induced Spin Nematicity in FeSe1-xSx and FeSe1-yTey Superconductor Systems|Shaobo Liu,Jie Yuan,Sheng Ma,Zouyouwei Lu,Yuhang Zhang,Mingwei Ma,Hua Zhang,Kui Jin,Li Yu,Fang Zhou,Xiaoli Dong,Zhongxian Zhao###
(1715905, 1715909)
 Importantly, we find that the isoelectronicsubstitution with sulfur does not suppress but even enhances the characteristicTsn of the induced spin nematicity in FeSe1-xSx samples.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[274.0, 0, ',', 3],[271.0, 0.07, ',', 3],[269.0, 0.13, 'and', 3],[250.0, 0.06, ',', 3],[248.0, 0.61, 'and', 3],[230.0, 9, 'T', 3]

FeSe1-x
###Magnetic-Field-Induced Spin Nematicity in FeSe1-xSx and FeSe1-yTey Superconductor Systems|Shaobo Liu,Jie Yuan,Sheng Ma,Zouyouwei Lu,Yuhang Zhang,Mingwei Ma,Hua Zhang,Kui Jin,Li Yu,Fang Zhou,Xiaoli Dong,Zhongxian Zhao###
(1715992, 1715996)
 Furthermore, we find that the superconductivity issignificantly suppressed with the enhancement of the induced spin nematicity inboth FeSe1-xSx and FeSe1-yTey samples.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[361.0, 0, ',', 5],[358.0, 0.07, ',', 5],[356.0, 0.13, 'and', 5],[337.0, 0.06, ',', 5],[335.0, 0.61, 'and', 5],[317.0, 9, 'T', 5]

FeSe1-y
###Magnetic-Field-Induced Spin Nematicity in FeSe1-xSx and FeSe1-yTey Superconductor Systems|Shaobo Liu,Jie Yuan,Sheng Ma,Zouyouwei Lu,Yuhang Zhang,Mingwei Ma,Hua Zhang,Kui Jin,Li Yu,Fang Zhou,Xiaoli Dong,Zhongxian Zhao###
(1716001, 1716005)
 Furthermore, we find that the superconductivity issignificantly suppressed with the enhancement of the induced spin nematicity inboth FeSe1-xSx and FeSe1-yTey samples.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[370.0, 0, ',', 5],[367.0, 0.07, ',', 5],[365.0, 0.13, 'and', 5],[346.0, 0.06, ',', 5],[344.0, 0.61, 'and', 5],[326.0, 9, 'T', 5]

MnBi2Te4
###Magnetization-tuned topological quantum phase transition in MnBi2Te4 devices|Jun Ge,Yanzhao Liu,Pinyuan Wang,Zhiming Xu,Jiaheng Li,Hao Li,Zihan Yan,Yang Wu,Yong Xu,Jian Wang###
(1716033, 1716037)
Magnetization-tuned topological quantum phase transition in MnBi2Te4 devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnBi2Te4
###Magnetization-tuned topological quantum phase transition in MnBi2Te4 devices|Jun Ge,Yanzhao Liu,Pinyuan Wang,Zhiming Xu,Jiaheng Li,Hao Li,Zihan Yan,Yang Wu,Yong Xu,Jian Wang###
(1716055, 1716059)
 Recently, the intrinsic magnetic topological insulator MnBi2Te4 has attractedenormous research interest due to the great success in realizing exotictopological quantum states, such as the quantum anomalous Hall effect (Q<missing VAR>AHE),axion insulator state, high-Chern-number and high-temperature Chern insulatorstates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Magnetization-tuned topological quantum phase transition in MnBi2Te4 devices|Jun Ge,Yanzhao Liu,Pinyuan Wang,Zhiming Xu,Jiaheng Li,Hao Li,Zihan Yan,Yang Wu,Yong Xu,Jian Wang###
(1716113, 1716113)
 Recently, the intrinsic magnetic topological insulator MnBi2Te4 has attractedenormous research interest due to the great success in realizing exotictopological quantum states, such as the quantum anomalous Hall effect (Q<missing VAR>AHE),axion insulator state, high-Chern-number and high-temperature Chern insulatorstates.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnBi2Te4
###Magnetization-tuned topological quantum phase transition in MnBi2Te4 devices|Jun Ge,Yanzhao Liu,Pinyuan Wang,Zhiming Xu,Jiaheng Li,Hao Li,Zihan Yan,Yang Wu,Yong Xu,Jian Wang###
(1716243, 1716247)
 Here, by systematic angle-dependenttransport measurements, we reveal a magnetization-tuned topological quantumphase transition from Chern insulator to magnetic insulator with gapped Diracsurface states in MnBi2Te4 devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnBi2Te4
###Magnetization-tuned topological quantum phase transition in MnBi2Te4 devices|Jun Ge,Yanzhao Liu,Pinyuan Wang,Zhiming Xu,Jiaheng Li,Hao Li,Zihan Yan,Yang Wu,Yong Xu,Jian Wang###
(1716413, 1716417)
 The theoretical analyses based on modifiedLandauer-Buttiker formalism show that the field-tilt-driven switching fromferromagnetic state to canted antiferromagnetic state induces a topologicalquantum phase transition from Chern insulator to magnetic insulator with gappedDirac surface states in MnBi2Te4 devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Quantum contribution to magnetotransport in weak magnetic fields and negative longitudinal magnetoresistance|Hridis K. Pal###
(1716654, 1716654)
Here, I propose a different mechanism that leads to LMR in any dispersionwithout a need to satisfy the above requirements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrSnO3
###Hysteretic Magnetoresistance in a Non-Magnetic SrSnO3 Film via Thermal Coupling to Dynamic Substrate Behavior|Laxman Raju Thoutam,Tristan K. Truttmann,Anil Kumar Rajapitamahuni,Bharat Jalan###
(1716895, 1716898)
Hysteretic Magnetoresistance in a Non-Magnetic SrSnO3 Film via Thermal Coupling to Dynamic Substrate Behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 12, 'nm', 3],[164.0, 5, 'K', 3],[179.0, 3, 'T', 3],[186.0, 2.5, 'K', 3],[214.0, 100, '%', 4],[218.0, 1.8, 'K', 4]

La
###Hysteretic Magnetoresistance in a Non-Magnetic SrSnO3 Film via Thermal Coupling to Dynamic Substrate Behavior|Laxman Raju Thoutam,Tristan K. Truttmann,Anil Kumar Rajapitamahuni,Bharat Jalan###
(1716978, 1716978)
 Here,magnetotransport is investigated in a non-magnetic uniformly La-doped SrSnO3film grown using hybrid molecular beam epitaxy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 12, 'nm', 1],[84.0, 5, 'K', 1],[99.0, 3, 'T', 1],[106.0, 2.5, 'K', 1],[134.0, 100, '%', 2],[138.0, 1.8, 'K', 2]

SrSnO3
###Hysteretic Magnetoresistance in a Non-Magnetic SrSnO3 Film via Thermal Coupling to Dynamic Substrate Behavior|Laxman Raju Thoutam,Tristan K. Truttmann,Anil Kumar Rajapitamahuni,Bharat Jalan###
(1716982, 1716985)
 Here,magnetotransport is investigated in a non-magnetic uniformly La-doped SrSnO3film grown using hybrid molecular beam epitaxy.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 12, 'nm', 1],[77.0, 5, 'K', 1],[92.0, 3, 'T', 1],[99.0, 2.5, 'K', 1],[127.0, 100, '%', 2],[131.0, 1.8, 'K', 2]

LaSrSnO3
###Hysteretic Magnetoresistance in a Non-Magnetic SrSnO3 Film via Thermal Coupling to Dynamic Substrate Behavior|Laxman Raju Thoutam,Tristan K. Truttmann,Anil Kumar Rajapitamahuni,Bharat Jalan###
(1717006, 1717010)
 A 12 nm LaSrSnO3/2 nmSrSnO3/GdScO3 (110) film with insulating behavior exhibited a robust hysteresisloop in the MR at T<missing VAR> < 5 K accompanied by an anomaly at  /- 3 T at T<missing VAR> < 2.5 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 12, 'nm', 0],[52.0, 5, 'K', 0],[67.0, 3, 'T', 0],[74.0, 2.5, 'K', 0],[102.0, 100, '%', 1],[106.0, 1.8, 'K', 1]

SrSnO3/GdScO3
###Hysteretic Magnetoresistance in a Non-Magnetic SrSnO3 Film via Thermal Coupling to Dynamic Substrate Behavior|Laxman Raju Thoutam,Tristan K. Truttmann,Anil Kumar Rajapitamahuni,Bharat Jalan###
(1717017, 1717025)
 A 12 nm LaSrSnO3/2 nmSrSnO3/GdScO3 (110) film with insulating behavior exhibited a robust hysteresisloop in the MR at T<missing VAR> < 5 K accompanied by an anomaly at  /- 3 T at T<missing VAR> < 2.5 K.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[13.0, 12, 'nm', 0],[37.0, 5, 'K', 0],[52.0, 3, 'T', 0],[59.0, 2.5, 'K', 0],[87.0, 100, '%', 1],[91.0, 1.8, 'K', 1]

GdScO3
###Hysteretic Magnetoresistance in a Non-Magnetic SrSnO3 Film via Thermal Coupling to Dynamic Substrate Behavior|Laxman Raju Thoutam,Tristan K. Truttmann,Anil Kumar Rajapitamahuni,Bharat Jalan###
(1717194, 1717197)
Using detailed temperature-, angle- and magnetic field-dependent resistancemeasurements, we illustrate the origin of hysteresis is not due to magnetism inthe film but rather is associated with the magnetocaloric effect of the GdScO3substrate.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[190.0, 12, 'nm', 2],[132.0, 5, 'K', 2],[117.0, 3, 'T', 2],[110.0, 2.5, 'K', 2],[82.0, 100, '%', 1],[78.0, 1.8, 'K', 1]

GdScO3
###Hysteretic Magnetoresistance in a Non-Magnetic SrSnO3 Film via Thermal Coupling to Dynamic Substrate Behavior|Laxman Raju Thoutam,Tristan K. Truttmann,Anil Kumar Rajapitamahuni,Bharat Jalan###
(1717205, 1717208)
 Given GdScO3 and similar substrates are commonly used in complexoxide research, this work highlights the importance of thermal coupling toprocesses in the substrates which must be carefully accounted for in the datainterpretation for thin films and heterostructures utilizing these substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[201.0, 12, 'nm', 3],[143.0, 5, 'K', 3],[128.0, 3, 'T', 3],[121.0, 2.5, 'K', 3],[93.0, 100, '%', 2],[89.0, 1.8, 'K', 2]

U
###Large Unidirectional Magnetoresistance in Metallic Heterostructures in the Spin Transfer Torque Regime|Ting-Yu Chang,Chih-Lin Cheng,Chao-Chung Huang,Cheng-Wei Peng,Yu-Hao Huang,Tian-Yue Chen,Yan-Ting Liu,Chi-Feng Pai###
(1717339, 1717339)
 A large unidirectional magnetoresistance (UMR) ratio of UMR/R<missing VAR>xxsim0.36% is found in W/CoFeB metallic bilayer heterostructures at roomtemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 0.36, '%', 0]

U
###Large Unidirectional Magnetoresistance in Metallic Heterostructures in the Spin Transfer Torque Regime|Ting-Yu Chang,Chih-Lin Cheng,Chao-Chung Huang,Cheng-Wei Peng,Yu-Hao Huang,Tian-Yue Chen,Yan-Ting Liu,Chi-Feng Pai###
(1717348, 1717348)
 A large unidirectional magnetoresistance (UMR) ratio of UMR/R<missing VAR>xxsim0.36% is found in W/CoFeB metallic bilayer heterostructures at roomtemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 0.36, '%', 0]

W/CoFeB
###Large Unidirectional Magnetoresistance in Metallic Heterostructures in the Spin Transfer Torque Regime|Ting-Yu Chang,Chih-Lin Cheng,Chao-Chung Huang,Cheng-Wei Peng,Yu-Hao Huang,Tian-Yue Chen,Yan-Ting Liu,Chi-Feng Pai###
(1717366, 1717370)
 A large unidirectional magnetoresistance (UMR) ratio of UMR/R<missing VAR>xxsim0.36% is found in W/CoFeB metallic bilayer heterostructures at roomtemperature.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[9.0, 0.36, '%', 0]

U
###Large Unidirectional Magnetoresistance in Metallic Heterostructures in the Spin Transfer Torque Regime|Ting-Yu Chang,Chih-Lin Cheng,Chao-Chung Huang,Cheng-Wei Peng,Yu-Hao Huang,Tian-Yue Chen,Yan-Ting Liu,Chi-Feng Pai###
(1717406, 1717406)
 Three different regimes in terms of the current dependence of UMRratio are identified A spin-dependent-scattering mechanism regime at smallcurrent densities J<missing VAR> sim 109A/m<missing VAR>2 (UMR ratio propto J), aspin-magnon-interaction mechanism regime at intermediate J<missing VAR> sim1010A/m<missing VAR>2 (UMR ratio propto J<missing VAR>3), and a spin-transfertorque (STT) regime at J<missing VAR> sim 1011A/m<missing VAR>2 (UMR ratio independent ofJ).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 0.36, '%', 1]

U
###Large Unidirectional Magnetoresistance in Metallic Heterostructures in the Spin Transfer Torque Regime|Ting-Yu Chang,Chih-Lin Cheng,Chao-Chung Huang,Cheng-Wei Peng,Yu-Hao Huang,Tian-Yue Chen,Yan-Ting Liu,Chi-Feng Pai###
(1717450, 1717450)
 Three different regimes in terms of the current dependence of UMRratio are identified A spin-dependent-scattering mechanism regime at smallcurrent densities J<missing VAR> sim 109A/m<missing VAR>2 (UMR ratio propto J), aspin-magnon-interaction mechanism regime at intermediate J<missing VAR> sim1010A/m<missing VAR>2 (UMR ratio propto J<missing VAR>3), and a spin-transfertorque (STT) regime at J<missing VAR> sim 1011A/m<missing VAR>2 (UMR ratio independent ofJ).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 0.36, '%', 1]

U
###Large Unidirectional Magnetoresistance in Metallic Heterostructures in the Spin Transfer Torque Regime|Ting-Yu Chang,Chih-Lin Cheng,Chao-Chung Huang,Cheng-Wei Peng,Yu-Hao Huang,Tian-Yue Chen,Yan-Ting Liu,Chi-Feng Pai###
(1717492, 1717492)
 Three different regimes in terms of the current dependence of UMRratio are identified A spin-dependent-scattering mechanism regime at smallcurrent densities J<missing VAR> sim 109A/m<missing VAR>2 (UMR ratio propto J), aspin-magnon-interaction mechanism regime at intermediate J<missing VAR> sim1010A/m<missing VAR>2 (UMR ratio propto J<missing VAR>3), and a spin-transfertorque (STT) regime at J<missing VAR> sim 1011A/m<missing VAR>2 (UMR ratio independent ofJ).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 0.36, '%', 1]

S
###Large Unidirectional Magnetoresistance in Metallic Heterostructures in the Spin Transfer Torque Regime|Ting-Yu Chang,Chih-Lin Cheng,Chao-Chung Huang,Cheng-Wei Peng,Yu-Hao Huang,Tian-Yue Chen,Yan-Ting Liu,Chi-Feng Pai###
(1717517, 1717517)
 Three different regimes in terms of the current dependence of UMRratio are identified A spin-dependent-scattering mechanism regime at smallcurrent densities J<missing VAR> sim 109A/m<missing VAR>2 (UMR ratio propto J), aspin-magnon-interaction mechanism regime at intermediate J<missing VAR> sim1010A/m<missing VAR>2 (UMR ratio propto J<missing VAR>3), and a spin-transfertorque (STT) regime at J<missing VAR> sim 1011A/m<missing VAR>2 (UMR ratio independent ofJ).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 0.36, '%', 1]

U
###Large Unidirectional Magnetoresistance in Metallic Heterostructures in the Spin Transfer Torque Regime|Ting-Yu Chang,Chih-Lin Cheng,Chao-Chung Huang,Cheng-Wei Peng,Yu-Hao Huang,Tian-Yue Chen,Yan-Ting Liu,Chi-Feng Pai###
(1717538, 1717538)
 Three different regimes in terms of the current dependence of UMRratio are identified A spin-dependent-scattering mechanism regime at smallcurrent densities J<missing VAR> sim 109A/m<missing VAR>2 (UMR ratio propto J), aspin-magnon-interaction mechanism regime at intermediate J<missing VAR> sim1010A/m<missing VAR>2 (UMR ratio propto J<missing VAR>3), and a spin-transfertorque (STT) regime at J<missing VAR> sim 1011A/m<missing VAR>2 (UMR ratio independent ofJ).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 0.36, '%', 1]

U
###Large Unidirectional Magnetoresistance in Metallic Heterostructures in the Spin Transfer Torque Regime|Ting-Yu Chang,Chih-Lin Cheng,Chao-Chung Huang,Cheng-Wei Peng,Yu-Hao Huang,Tian-Yue Chen,Yan-Ting Liu,Chi-Feng Pai###
(1717569, 1717569)
 We verify the direct correlation between this large UMR and the transferof spin angular momentum from the W layer to the CoFeB layer by bothfield-dependent and current-dependent UMR characterizations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[212.0, 0.36, '%', 2]

W
###Large Unidirectional Magnetoresistance in Metallic Heterostructures in the Spin Transfer Torque Regime|Ting-Yu Chang,Chih-Lin Cheng,Chao-Chung Huang,Cheng-Wei Peng,Yu-Hao Huang,Tian-Yue Chen,Yan-Ting Liu,Chi-Feng Pai###
(1717592, 1717592)
 We verify the direct correlation between this large UMR and the transferof spin angular momentum from the W layer to the CoFeB layer by bothfield-dependent and current-dependent UMR characterizations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[235.0, 0.36, '%', 2]

CoFeB
###Large Unidirectional Magnetoresistance in Metallic Heterostructures in the Spin Transfer Torque Regime|Ting-Yu Chang,Chih-Lin Cheng,Chao-Chung Huang,Cheng-Wei Peng,Yu-Hao Huang,Tian-Yue Chen,Yan-Ting Liu,Chi-Feng Pai###
(1717600, 1717602)
 We verify the direct correlation between this large UMR and the transferof spin angular momentum from the W layer to the CoFeB layer by bothfield-dependent and current-dependent UMR characterizations.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[243.0, 0.36, '%', 2]

U
###Large Unidirectional Magnetoresistance in Metallic Heterostructures in the Spin Transfer Torque Regime|Ting-Yu Chang,Chih-Lin Cheng,Chao-Chung Huang,Cheng-Wei Peng,Yu-Hao Huang,Tian-Yue Chen,Yan-Ting Liu,Chi-Feng Pai###
(1717621, 1717621)
 We verify the direct correlation between this large UMR and the transferof spin angular momentum from the W layer to the CoFeB layer by bothfield-dependent and current-dependent UMR characterizations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[264.0, 0.36, '%', 2]

S
###Large Unidirectional Magnetoresistance in Metallic Heterostructures in the Spin Transfer Torque Regime|Ting-Yu Chang,Chih-Lin Cheng,Chao-Chung Huang,Cheng-Wei Peng,Yu-Hao Huang,Tian-Yue Chen,Yan-Ting Liu,Chi-Feng Pai###
(1717643, 1717643)
 Numericalsimulations further confirm that the large STT-UMR stems from the tilting ofthe magnetization affected by the spin Hall effect-induced spin-transfertorques.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[286.0, 0.36, '%', 3]

U
###Large Unidirectional Magnetoresistance in Metallic Heterostructures in the Spin Transfer Torque Regime|Ting-Yu Chang,Chih-Lin Cheng,Chao-Chung Huang,Cheng-Wei Peng,Yu-Hao Huang,Tian-Yue Chen,Yan-Ting Liu,Chi-Feng Pai###
(1717647, 1717647)
 Numericalsimulations further confirm that the large STT-UMR stems from the tilting ofthe magnetization affected by the spin Hall effect-induced spin-transfertorques.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[290.0, 0.36, '%', 3]

Cu
###Evolution of magnetic and transport properties in Cu doped pyrochlore iridate Eu2(Ir1-xCux)2O7|Sampad Mondal,M. Modak,B. Maji,Swapan K. Mandal,B. Ghosh,Surajit Saha,M. Sardar,S. Banerjee###
(1717744, 1717744)
Evolution of magnetic and transport properties in Cu doped pyrochlore iridate Eu2(Ir1-xCux)2O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 120, 'K', 3],[150.0, 50, 'K', 4],[220.0, 50, 'K', 5],[243.0, 50, 'K', 5],[287.0, 50, 'K', 6],[341.0, 3, 'K', 7],[377.0, 6, 'K', 8]

Eu2
###Evolution of magnetic and transport properties in Cu doped pyrochlore iridate Eu2(Ir1-xCux)2O7|Sampad Mondal,M. Modak,B. Maji,Swapan K. Mandal,B. Ghosh,Surajit Saha,M. Sardar,S. Banerjee###
(1717752, 1717753)
Evolution of magnetic and transport properties in Cu doped pyrochlore iridate Eu2(Ir1-xCux)2O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 120, 'K', 3],[141.0, 50, 'K', 4],[211.0, 50, 'K', 5],[234.0, 50, 'K', 5],[278.0, 50, 'K', 6],[332.0, 3, 'K', 7],[368.0, 6, 'K', 8]

Ir1-x
###Evolution of magnetic and transport properties in Cu doped pyrochlore iridate Eu2(Ir1-xCux)2O7|Sampad Mondal,M. Modak,B. Maji,Swapan K. Mandal,B. Ghosh,Surajit Saha,M. Sardar,S. Banerjee###
(1717755, 1717758)
Evolution of magnetic and transport properties in Cu doped pyrochlore iridate Eu2(Ir1-xCux)2O7.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[116.0, 120, 'K', 3],[136.0, 50, 'K', 4],[206.0, 50, 'K', 5],[229.0, 50, 'K', 5],[273.0, 50, 'K', 6],[327.0, 3, 'K', 7],[363.0, 6, 'K', 8]

O7
###Evolution of magnetic and transport properties in Cu doped pyrochlore iridate Eu2(Ir1-xCux)2O7|Sampad Mondal,M. Modak,B. Maji,Swapan K. Mandal,B. Ghosh,Surajit Saha,M. Sardar,S. Banerjee###
(1717762, 1717763)
Evolution of magnetic and transport properties in Cu doped pyrochlore iridate Eu2(Ir1-xCux)2O7.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 120, 'K', 3],[131.0, 50, 'K', 4],[201.0, 50, 'K', 5],[224.0, 50, 'K', 5],[268.0, 50, 'K', 6],[322.0, 3, 'K', 7],[358.0, 6, 'K', 8]

Cu
###Evolution of magnetic and transport properties in Cu doped pyrochlore iridate Eu2(Ir1-xCux)2O7|Sampad Mondal,M. Modak,B. Maji,Swapan K. Mandal,B. Ghosh,Surajit Saha,M. Sardar,S. Banerjee###
(1717778, 1717778)
 We have investigated the effect of Cu substitution in Eu2(Ir1-xCux)2O7 withthe help of magnetic and transport property measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 120, 'K', 2],[116.0, 50, 'K', 3],[186.0, 50, 'K', 4],[209.0, 50, 'K', 4],[253.0, 50, 'K', 5],[307.0, 3, 'K', 6],[343.0, 6, 'K', 7]

Eu2
###Evolution of magnetic and transport properties in Cu doped pyrochlore iridate Eu2(Ir1-xCux)2O7|Sampad Mondal,M. Modak,B. Maji,Swapan K. Mandal,B. Ghosh,Surajit Saha,M. Sardar,S. Banerjee###
(1717784, 1717785)
 We have investigated the effect of Cu substitution in Eu2(Ir1-xCux)2O7 withthe help of magnetic and transport property measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 120, 'K', 2],[109.0, 50, 'K', 3],[179.0, 50, 'K', 4],[202.0, 50, 'K', 4],[246.0, 50, 'K', 5],[300.0, 3, 'K', 6],[336.0, 6, 'K', 7]

Ir1-x
###Evolution of magnetic and transport properties in Cu doped pyrochlore iridate Eu2(Ir1-xCux)2O7|Sampad Mondal,M. Modak,B. Maji,Swapan K. Mandal,B. Ghosh,Surajit Saha,M. Sardar,S. Banerjee###
(1717787, 1717790)
 We have investigated the effect of Cu substitution in Eu2(Ir1-xCux)2O7 withthe help of magnetic and transport property measurements.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[84.0, 120, 'K', 2],[104.0, 50, 'K', 3],[174.0, 50, 'K', 4],[197.0, 50, 'K', 4],[241.0, 50, 'K', 5],[295.0, 3, 'K', 6],[331.0, 6, 'K', 7]

O7
###Evolution of magnetic and transport properties in Cu doped pyrochlore iridate Eu2(Ir1-xCux)2O7|Sampad Mondal,M. Modak,B. Maji,Swapan K. Mandal,B. Ghosh,Surajit Saha,M. Sardar,S. Banerjee###
(1717794, 1717795)
 We have investigated the effect of Cu substitution in Eu2(Ir1-xCux)2O7 withthe help of magnetic and transport property measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 120, 'K', 2],[99.0, 50, 'K', 3],[169.0, 50, 'K', 4],[192.0, 50, 'K', 4],[236.0, 50, 'K', 5],[290.0, 3, 'K', 6],[326.0, 6, 'K', 7]

PS
###Evolution of magnetic and transport properties in Cu doped pyrochlore iridate Eu2(Ir1-xCux)2O7|Sampad Mondal,M. Modak,B. Maji,Swapan K. Mandal,B. Ghosh,Surajit Saha,M. Sardar,S. Banerjee###
(1717818, 1717819)
 X<missing VAR>PS measurementreveals that each Cu2 converts Ir4 to double amount of Ir5 ions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 120, 'K', 1],[75.0, 50, 'K', 2],[145.0, 50, 'K', 3],[168.0, 50, 'K', 3],[212.0, 50, 'K', 4],[266.0, 3, 'K', 5],[302.0, 6, 'K', 6]

Cu2
###Evolution of magnetic and transport properties in Cu doped pyrochlore iridate Eu2(Ir1-xCux)2O7|Sampad Mondal,M. Modak,B. Maji,Swapan K. Mandal,B. Ghosh,Surajit Saha,M. Sardar,S. Banerjee###
(1717830, 1717831)
 X<missing VAR>PS measurementreveals that each Cu2 converts Ir4 to double amount of Ir5 ions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 120, 'K', 1],[63.0, 50, 'K', 2],[133.0, 50, 'K', 3],[156.0, 50, 'K', 3],[200.0, 50, 'K', 4],[254.0, 3, 'K', 5],[290.0, 6, 'K', 6]

Ir4
###Evolution of magnetic and transport properties in Cu doped pyrochlore iridate Eu2(Ir1-xCux)2O7|Sampad Mondal,M. Modak,B. Maji,Swapan K. Mandal,B. Ghosh,Surajit Saha,M. Sardar,S. Banerjee###
(1717835, 1717836)
 X<missing VAR>PS measurementreveals that each Cu2 converts Ir4 to double amount of Ir5 ions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 120, 'K', 1],[58.0, 50, 'K', 2],[128.0, 50, 'K', 3],[151.0, 50, 'K', 3],[195.0, 50, 'K', 4],[249.0, 3, 'K', 5],[285.0, 6, 'K', 6]

Ir5
###Evolution of magnetic and transport properties in Cu doped pyrochlore iridate Eu2(Ir1-xCux)2O7|Sampad Mondal,M. Modak,B. Maji,Swapan K. Mandal,B. Ghosh,Surajit Saha,M. Sardar,S. Banerjee###
(1717846, 1717847)
 X<missing VAR>PS measurementreveals that each Cu2 converts Ir4 to double amount of Ir5 ions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 120, 'K', 1],[47.0, 50, 'K', 2],[117.0, 50, 'K', 3],[140.0, 50, 'K', 3],[184.0, 50, 'K', 4],[238.0, 3, 'K', 5],[274.0, 6, 'K', 6]

I
###Evolution of magnetic and transport properties in Cu doped pyrochlore iridate Eu2(Ir1-xCux)2O7|Sampad Mondal,M. Modak,B. Maji,Swapan K. Mandal,B. Ghosh,Surajit Saha,M. Sardar,S. Banerjee###
(1717866, 1717866)
 Themetal-insulator transition temperature (TMI) is obtained around 120 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 120, 'K', 0],[28.0, 50, 'K', 1],[98.0, 50, 'K', 2],[121.0, 50, 'K', 2],[165.0, 50, 'K', 3],[219.0, 3, 'K', 4],[255.0, 6, 'K', 5]

In
###Evolution of magnetic and transport properties in Cu doped pyrochlore iridate Eu2(Ir1-xCux)2O7|Sampad Mondal,M. Modak,B. Maji,Swapan K. Mandal,B. Ghosh,Surajit Saha,M. Sardar,S. Banerjee###
(1717877, 1717877)
 In theinsulating phase, at lower temperature below 50 K, the temperature dependentresistivity follows a power law dependence and the magnitude of the exponentincreases with Cu concentrations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 120, 'K', 1],[17.0, 50, 'K', 0],[87.0, 50, 'K', 1],[110.0, 50, 'K', 1],[154.0, 50, 'K', 2],[208.0, 3, 'K', 3],[244.0, 6, 'K', 4]

Cu
###Evolution of magnetic and transport properties in Cu doped pyrochlore iridate Eu2(Ir1-xCux)2O7|Sampad Mondal,M. Modak,B. Maji,Swapan K. Mandal,B. Ghosh,Surajit Saha,M. Sardar,S. Banerjee###
(1717933, 1717933)
 In theinsulating phase, at lower temperature below 50 K, the temperature dependentresistivity follows a power law dependence and the magnitude of the exponentincreases with Cu concentrations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 120, 'K', 1],[39.0, 50, 'K', 0],[31.0, 50, 'K', 1],[54.0, 50, 'K', 1],[98.0, 50, 'K', 2],[152.0, 3, 'K', 3],[188.0, 6, 'K', 4]

FC
###Evolution of magnetic and transport properties in Cu doped pyrochlore iridate Eu2(Ir1-xCux)2O7|Sampad Mondal,M. Modak,B. Maji,Swapan K. Mandal,B. Ghosh,Surajit Saha,M. Sardar,S. Banerjee###
(1718057, 1718058)
 We observe bifurcation in zero field cooled and field cooled(Z<missing VAR>FC-FC) magnetization below irreversibility temperature, exchange bias andnegative magnetoresistance at 3 K and the magnitude of all these propertiesincreases with Cu concentrations.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[183.0, 120, 'K', 4],[163.0, 50, 'K', 3],[93.0, 50, 'K', 2],[70.0, 50, 'K', 2],[26.0, 50, 'K', 1],[27.0, 3, 'K', 0],[63.0, 6, 'K', 1]

C
###Evolution of magnetic and transport properties in Cu doped pyrochlore iridate Eu2(Ir1-xCux)2O7|Sampad Mondal,M. Modak,B. Maji,Swapan K. Mandal,B. Ghosh,Surajit Saha,M. Sardar,S. Banerjee###
(1718061, 1718061)
 We observe bifurcation in zero field cooled and field cooled(Z<missing VAR>FC-FC) magnetization below irreversibility temperature, exchange bias andnegative magnetoresistance at 3 K and the magnitude of all these propertiesincreases with Cu concentrations.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[187.0, 120, 'K', 4],[167.0, 50, 'K', 3],[97.0, 50, 'K', 2],[74.0, 50, 'K', 2],[30.0, 50, 'K', 1],[24.0, 3, 'K', 0],[60.0, 6, 'K', 1]

Cu
###Evolution of magnetic and transport properties in Cu doped pyrochlore iridate Eu2(Ir1-xCux)2O7|Sampad Mondal,M. Modak,B. Maji,Swapan K. Mandal,B. Ghosh,Surajit Saha,M. Sardar,S. Banerjee###
(1718106, 1718106)
 We observe bifurcation in zero field cooled and field cooled(Z<missing VAR>FC-FC) magnetization below irreversibility temperature, exchange bias andnegative magnetoresistance at 3 K and the magnitude of all these propertiesincreases with Cu concentrations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[232.0, 120, 'K', 4],[212.0, 50, 'K', 3],[142.0, 50, 'K', 2],[119.0, 50, 'K', 2],[75.0, 50, 'K', 1],[21.0, 3, 'K', 0],[15.0, 6, 'K', 1]

In
###Evolution of magnetic and transport properties in Cu doped pyrochlore iridate Eu2(Ir1-xCux)2O7|Sampad Mondal,M. Modak,B. Maji,Swapan K. Mandal,B. Ghosh,Surajit Saha,M. Sardar,S. Banerjee###
(1718111, 1718111)
 In the insulating region (below 6 K) thereexists a linear specific heat and its coefficient decreases with Cu dopingwhich indicates the reduction of spinon contribution with Cu doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[237.0, 120, 'K', 5],[217.0, 50, 'K', 4],[147.0, 50, 'K', 3],[124.0, 50, 'K', 3],[80.0, 50, 'K', 2],[26.0, 3, 'K', 1],[10.0, 6, 'K', 0]

Cu
###Evolution of magnetic and transport properties in Cu doped pyrochlore iridate Eu2(Ir1-xCux)2O7|Sampad Mondal,M. Modak,B. Maji,Swapan K. Mandal,B. Ghosh,Surajit Saha,M. Sardar,S. Banerjee###
(1718147, 1718147)
 In the insulating region (below 6 K) thereexists a linear specific heat and its coefficient decreases with Cu dopingwhich indicates the reduction of spinon contribution with Cu doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[273.0, 120, 'K', 5],[253.0, 50, 'K', 4],[183.0, 50, 'K', 3],[160.0, 50, 'K', 3],[116.0, 50, 'K', 2],[62.0, 3, 'K', 1],[26.0, 6, 'K', 0]

Cu
###Evolution of magnetic and transport properties in Cu doped pyrochlore iridate Eu2(Ir1-xCux)2O7|Sampad Mondal,M. Modak,B. Maji,Swapan K. Mandal,B. Ghosh,Surajit Saha,M. Sardar,S. Banerjee###
(1718168, 1718168)
 In the insulating region (below 6 K) thereexists a linear specific heat and its coefficient decreases with Cu dopingwhich indicates the reduction of spinon contribution with Cu doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[294.0, 120, 'K', 5],[274.0, 50, 'K', 4],[204.0, 50, 'K', 3],[181.0, 50, 'K', 3],[137.0, 50, 'K', 2],[83.0, 3, 'K', 1],[47.0, 6, 'K', 0]

WTe2
###Quantum oscillations in 2D insulators induced by graphite gates|Jiacheng Zhu,Tingxin Li,Andrea F. Young,Jie Shan,Kin Fai Mak###
(1718295, 1718297)
 We study a series of devices based ondifferent two-dimensional systems, including mono- and bilayer Td-WTe2,angle-aligned MoTe2/WSe2 heterobilayers and Bernal-stacked bilayer graphene,which all share a similar graphite-gated geometry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 2, 'D', 2],[51.0, 2, 'D', 1],[61.0, 2, 'D', 1],[400.0, 2, 'D', 6]

MoTe2/WSe2
###Quantum oscillations in 2D insulators induced by graphite gates|Jiacheng Zhu,Tingxin Li,Andrea F. Young,Jie Shan,Kin Fai Mak###
(1718305, 1718311)
 We study a series of devices based ondifferent two-dimensional systems, including mono- and bilayer Td-WTe2,angle-aligned MoTe2/WSe2 heterobilayers and Bernal-stacked bilayer graphene,which all share a similar graphite-gated geometry.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[119.0, 2, 'D', 2],[61.0, 2, 'D', 1],[47.0, 2, 'D', 1],[386.0, 2, 'D', 6]

TaSe2
###Quantum oscillations in 2D insulators induced by graphite gates|Jiacheng Zhu,Tingxin Li,Andrea F. Young,Jie Shan,Kin Fai Mak###
(1718520, 1718522)
 Further supporting thisconnection, the oscillations are quenched when the graphite gate is replaced byTaSe2, a high-density metal that does not show quantum oscillations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[334.0, 2, 'D', 5],[276.0, 2, 'D', 4],[162.0, 2, 'D', 2],[175.0, 2, 'D', 3]

FeSe
###Evolution of transport properties in FeSe thin flakes with thickness approaching the two-dimensional limit|C. S. Zhu,B. Lei,Z. L. Sun,J. H. Cui,M. Z. Shi,W. Z. Zhuo,X. G. Luo,X. H. Chen###
(1718730, 1718731)
Evolution of transport properties in FeSe thin flakes with thickness approaching the two-dimensional limit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 1.1, 'nm', 2],[182.0, 15, 'K', 4],[204.0, 9, 'T', 4],[223.0, 13, 'nm', 4],[260.0, 13, 'nm', 5],[288.0, 27, 'nm', 5],[357.0, 2, 'D', 7],[509.0, 2, 'D', 9]

FeSe
###Evolution of transport properties in FeSe thin flakes with thickness approaching the two-dimensional limit|C. S. Zhu,B. Lei,Z. L. Sun,J. H. Cui,M. Z. Shi,W. Z. Zhuo,X. G. Luo,X. H. Chen###
(1718758, 1718759)
 Electronic properties of FeSe can be tuned by various routes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 1.1, 'nm', 1],[154.0, 15, 'K', 3],[176.0, 9, 'T', 3],[195.0, 13, 'nm', 3],[232.0, 13, 'nm', 4],[260.0, 27, 'nm', 4],[329.0, 2, 'D', 6],[481.0, 2, 'D', 8]

FeSe
###Evolution of transport properties in FeSe thin flakes with thickness approaching the two-dimensional limit|C. S. Zhu,B. Lei,Z. L. Sun,J. H. Cui,M. Z. Shi,W. Z. Zhuo,X. G. Luo,X. H. Chen###
(1718807, 1718808)
 Here, wepresent a comprehensive study on the evolution of the superconductivity andnematicity in FeSe with thickness from bulk single crystal down to bilayer(sim 1.1 nm) through exfoliation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 1.1, 'nm', 0],[105.0, 15, 'K', 2],[127.0, 9, 'T', 2],[146.0, 13, 'nm', 2],[183.0, 13, 'nm', 3],[211.0, 27, 'nm', 3],[280.0, 2, 'D', 5],[432.0, 2, 'D', 7]

(B)
###Evolution of transport properties in FeSe thin flakes with thickness approaching the two-dimensional limit|C. S. Zhu,B. Lei,Z. L. Sun,J. H. Cui,M. Z. Shi,W. Z. Zhuo,X. G. Luo,X. H. Chen###
(1718897, 1718899)
 Themagnetic field (B) dependence of Hall resistance R<missing VAR>xy at 15 K changesfrom B-nonlinear to B-linear behavior up to 9 T, as the thickness (d) isreduced to 13 nm.
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 1.1, 'nm', 2],[14.0, 15, 'K', 0],[36.0, 9, 'T', 0],[55.0, 13, 'nm', 0],[92.0, 13, 'nm', 1],[120.0, 27, 'nm', 1],[189.0, 2, 'D', 3],[341.0, 2, 'D', 5]

B
###Evolution of transport properties in FeSe thin flakes with thickness approaching the two-dimensional limit|C. S. Zhu,B. Lei,Z. L. Sun,J. H. Cui,M. Z. Shi,W. Z. Zhuo,X. G. Luo,X. H. Chen###
(1718920, 1718920)
 Themagnetic field (B) dependence of Hall resistance R<missing VAR>xy at 15 K changesfrom B-nonlinear to B-linear behavior up to 9 T, as the thickness (d) isreduced to 13 nm.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 1.1, 'nm', 2],[7.0, 15, 'K', 0],[15.0, 9, 'T', 0],[34.0, 13, 'nm', 0],[71.0, 13, 'nm', 1],[99.0, 27, 'nm', 1],[168.0, 2, 'D', 3],[320.0, 2, 'D', 5]

B
###Evolution of transport properties in FeSe thin flakes with thickness approaching the two-dimensional limit|C. S. Zhu,B. Lei,Z. L. Sun,J. H. Cui,M. Z. Shi,W. Z. Zhuo,X. G. Luo,X. H. Chen###
(1718926, 1718926)
 Themagnetic field (B) dependence of Hall resistance R<missing VAR>xy at 15 K changesfrom B-nonlinear to B-linear behavior up to 9 T, as the thickness (d) isreduced to 13 nm.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 1.1, 'nm', 2],[13.0, 15, 'K', 0],[9.0, 9, 'T', 0],[28.0, 13, 'nm', 0],[65.0, 13, 'nm', 1],[93.0, 27, 'nm', 1],[162.0, 2, 'D', 3],[314.0, 2, 'D', 5]

I
###Evolution of transport properties in FeSe thin flakes with thickness approaching the two-dimensional limit|C. S. Zhu,B. Lei,Z. L. Sun,J. H. Cui,M. Z. Shi,W. Z. Zhuo,X. G. Luo,X. H. Chen###
(1719024, 1719024)
 The I-V characteristic curves inultrathin flakes reveal the signature of Berezinskii-Kosterlitz-Thouless (BKT)transition, indicating the presence of two-dimensional superconductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[193.0, 1.1, 'nm', 4],[111.0, 15, 'K', 2],[89.0, 9, 'T', 2],[70.0, 13, 'nm', 2],[33.0, 13, 'nm', 1],[5.0, 27, 'nm', 1],[64.0, 2, 'D', 1],[216.0, 2, 'D', 3]

V
###Evolution of transport properties in FeSe thin flakes with thickness approaching the two-dimensional limit|C. S. Zhu,B. Lei,Z. L. Sun,J. H. Cui,M. Z. Shi,W. Z. Zhuo,X. G. Luo,X. H. Chen###
(1719026, 1719026)
 The I-V characteristic curves inultrathin flakes reveal the signature of Berezinskii-Kosterlitz-Thouless (BKT)transition, indicating the presence of two-dimensional superconductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[195.0, 1.1, 'nm', 4],[113.0, 15, 'K', 2],[91.0, 9, 'T', 2],[72.0, 13, 'nm', 2],[35.0, 13, 'nm', 1],[7.0, 27, 'nm', 1],[62.0, 2, 'D', 1],[214.0, 2, 'D', 3]

BK
###Evolution of transport properties in FeSe thin flakes with thickness approaching the two-dimensional limit|C. S. Zhu,B. Lei,Z. L. Sun,J. H. Cui,M. Z. Shi,W. Z. Zhuo,X. G. Luo,X. H. Chen###
(1719054, 1719055)
 The I-V characteristic curves inultrathin flakes reveal the signature of Berezinskii-Kosterlitz-Thouless (BKT)transition, indicating the presence of two-dimensional superconductivity.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[223.0, 1.1, 'nm', 4],[141.0, 15, 'K', 2],[119.0, 9, 'T', 2],[100.0, 13, 'nm', 2],[63.0, 13, 'nm', 1],[35.0, 27, 'nm', 1],[33.0, 2, 'D', 1],[185.0, 2, 'D', 3]

FeSe
###Evolution of transport properties in FeSe thin flakes with thickness approaching the two-dimensional limit|C. S. Zhu,B. Lei,Z. L. Sun,J. H. Cui,M. Z. Shi,W. Z. Zhuo,X. G. Luo,X. H. Chen###
(1719099, 1719100)
Anisotropic magnetoresistance measurements further support 2D superconductivityin few-layer FeSe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[268.0, 1.1, 'nm', 5],[186.0, 15, 'K', 3],[164.0, 9, 'T', 3],[145.0, 13, 'nm', 3],[108.0, 13, 'nm', 2],[80.0, 27, 'nm', 2],[11.0, 2, 'D', 0],[140.0, 2, 'D', 2]

FeSe
###Evolution of transport properties in FeSe thin flakes with thickness approaching the two-dimensional limit|C. S. Zhu,B. Lei,Z. L. Sun,J. H. Cui,M. Z. Shi,W. Z. Zhuo,X. G. Luo,X. H. Chen###
(1719133, 1719134)
 Increase of disorder scattering, anisotropic strains anddimensionality effect with reducing the thickness of FeSe flakes, might betaken into account for understanding these behaviors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[302.0, 1.1, 'nm', 6],[220.0, 15, 'K', 4],[198.0, 9, 'T', 4],[179.0, 13, 'nm', 4],[142.0, 13, 'nm', 3],[114.0, 27, 'nm', 3],[45.0, 2, 'D', 1],[106.0, 2, 'D', 1]

FeSe
###Evolution of transport properties in FeSe thin flakes with thickness approaching the two-dimensional limit|C. S. Zhu,B. Lei,Z. L. Sun,J. H. Cui,M. Z. Shi,W. Z. Zhuo,X. G. Luo,X. H. Chen###
(1719202, 1719203)
 Our study providessystematic insights into the evolution of the superconducting properties,structural transition and Hall resistance of a superconductor FeSe with flakesthickness and provides an effective way to find two-dimensionalsuperconductivity as well as other 2D novel phenomena.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[371.0, 1.1, 'nm', 7],[289.0, 15, 'K', 5],[267.0, 9, 'T', 5],[248.0, 13, 'nm', 5],[211.0, 13, 'nm', 4],[183.0, 27, 'nm', 4],[114.0, 2, 'D', 2],[37.0, 2, 'D', 0]

SO
###Anatomy of Type-X Spin-Orbit Torque Switching|Yan-Ting Liu,Chao-Chung Huang,Kuan-Hao Chen,Yu-Hao Huang,Chia-Chin Tsai,Ting-Yu Chang,Chi-Feng Pai###
(1719285, 1719286)
 Using type-x<missing VAR> spin-orbit torque (SOT) switching scheme, in which the easy axis(E<missing VAR>A) of the ferromagnetic (FM) layer and the charge current flow direction arecollinear, is possible to realize a lower-power-consumption, higher-density,and better-performance SOT<missing VAR> magnetoresistive random access memory (SOT-MRAM) ascompared to the conventional type-y<missing VAR> design.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[436.0, 10, 'ns', 5]

F
###Anatomy of Type-X Spin-Orbit Torque Switching|Yan-Ting Liu,Chao-Chung Huang,Kuan-Hao Chen,Yu-Hao Huang,Chia-Chin Tsai,Ting-Yu Chang,Chi-Feng Pai###
(1719318, 1719318)
 Using type-x<missing VAR> spin-orbit torque (SOT) switching scheme, in which the easy axis(E<missing VAR>A) of the ferromagnetic (FM) layer and the charge current flow direction arecollinear, is possible to realize a lower-power-consumption, higher-density,and better-performance SOT<missing VAR> magnetoresistive random access memory (SOT-MRAM) ascompared to the conventional type-y<missing VAR> design.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[404.0, 10, 'ns', 5]

SO
###Anatomy of Type-X Spin-Orbit Torque Switching|Yan-Ting Liu,Chao-Chung Huang,Kuan-Hao Chen,Yu-Hao Huang,Chia-Chin Tsai,Ting-Yu Chang,Chi-Feng Pai###
(1719371, 1719372)
 Using type-x<missing VAR> spin-orbit torque (SOT) switching scheme, in which the easy axis(E<missing VAR>A) of the ferromagnetic (FM) layer and the charge current flow direction arecollinear, is possible to realize a lower-power-consumption, higher-density,and better-performance SOT<missing VAR> magnetoresistive random access memory (SOT-MRAM) ascompared to the conventional type-y<missing VAR> design.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[350.0, 10, 'ns', 5]

SO
###Anatomy of Type-X Spin-Orbit Torque Switching|Yan-Ting Liu,Chao-Chung Huang,Kuan-Hao Chen,Yu-Hao Huang,Chia-Chin Tsai,Ting-Yu Chang,Chi-Feng Pai###
(1719384, 1719385)
 Using type-x<missing VAR> spin-orbit torque (SOT) switching scheme, in which the easy axis(E<missing VAR>A) of the ferromagnetic (FM) layer and the charge current flow direction arecollinear, is possible to realize a lower-power-consumption, higher-density,and better-performance SOT<missing VAR> magnetoresistive random access memory (SOT-MRAM) ascompared to the conventional type-y<missing VAR> design.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[337.0, 10, 'ns', 5]

SO
###Anatomy of Type-X Spin-Orbit Torque Switching|Yan-Ting Liu,Chao-Chung Huang,Kuan-Hao Chen,Yu-Hao Huang,Chia-Chin Tsai,Ting-Yu Chang,Chi-Feng Pai###
(1719426, 1719427)
 Here, we systematically investigatetype-x<missing VAR> SOT<missing VAR> switching properties by both macrospin and micromagneticsimulations.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[295.0, 10, 'ns', 4]

F
###Anatomy of Type-X Spin-Orbit Torque Switching|Yan-Ting Liu,Chao-Chung Huang,Kuan-Hao Chen,Yu-Hao Huang,Chia-Chin Tsai,Ting-Yu Chang,Chi-Feng Pai###
(1719513, 1719513)
 Next, we study the FM<missing VAR> layer canting angle (phiE<missing VAR>A)dependence of J<missing VAR>sw through macrospin simulations and experiments, whichshow a transformation of switching dynamics from type-x<missing VAR> to type-y<missing VAR> withincreasing phiE<missing VAR>A.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[209.0, 10, 'ns', 2]

F
###Anatomy of Type-X Spin-Orbit Torque Switching|Yan-Ting Liu,Chao-Chung Huang,Kuan-Hao Chen,Yu-Hao Huang,Chia-Chin Tsai,Ting-Yu Chang,Chi-Feng Pai###
(1719597, 1719597)
 By further integrating field-like torque (FLT) into thesimulated system, we find that a positive FLT can assist type-x<missing VAR> SOT<missing VAR> switchingwhile a negative one brings about complex dynamics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 10, 'ns', 1]

F
###Anatomy of Type-X Spin-Orbit Torque Switching|Yan-Ting Liu,Chao-Chung Huang,Kuan-Hao Chen,Yu-Hao Huang,Chia-Chin Tsai,Ting-Yu Chang,Chi-Feng Pai###
(1719622, 1719622)
 By further integrating field-like torque (FLT) into thesimulated system, we find that a positive FLT can assist type-x<missing VAR> SOT<missing VAR> switchingwhile a negative one brings about complex dynamics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 10, 'ns', 1]

SO
###Anatomy of Type-X Spin-Orbit Torque Switching|Yan-Ting Liu,Chao-Chung Huang,Kuan-Hao Chen,Yu-Hao Huang,Chia-Chin Tsai,Ting-Yu Chang,Chi-Feng Pai###
(1719634, 1719635)
 By further integrating field-like torque (FLT) into thesimulated system, we find that a positive FLT can assist type-x<missing VAR> SOT<missing VAR> switchingwhile a negative one brings about complex dynamics.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 10, 'ns', 1]

F
###Anatomy of Type-X Spin-Orbit Torque Switching|Yan-Ting Liu,Chao-Chung Huang,Kuan-Hao Chen,Yu-Hao Huang,Chia-Chin Tsai,Ting-Yu Chang,Chi-Feng Pai###
(1719676, 1719676)
 More crucially, with theexistence of a sizable FLT, type-x<missing VAR> switching mode results in a lower criticalswitching current than type-y<missing VAR> at current pulse width less than  10 ns,indicating the advantage of employing type-x<missing VAR> design for ultrafast switchingusing materials systems with FLT.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 10, 'ns', 0]

F
###Anatomy of Type-X Spin-Orbit Torque Switching|Yan-Ting Liu,Chao-Chung Huang,Kuan-Hao Chen,Yu-Hao Huang,Chia-Chin Tsai,Ting-Yu Chang,Chi-Feng Pai###
(1719757, 1719757)
 More crucially, with theexistence of a sizable FLT, type-x<missing VAR> switching mode results in a lower criticalswitching current than type-y<missing VAR> at current pulse width less than  10 ns,indicating the advantage of employing type-x<missing VAR> design for ultrafast switchingusing materials systems with FLT.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 10, 'ns', 0]

SO
###Anatomy of Type-X Spin-Orbit Torque Switching|Yan-Ting Liu,Chao-Chung Huang,Kuan-Hao Chen,Yu-Hao Huang,Chia-Chin Tsai,Ting-Yu Chang,Chi-Feng Pai###
(1719781, 1719782)
 Our work provides a thorough examination oftype-x<missing VAR> SOT<missing VAR> scheme with various device/materials parameters, which can beinformative for designing next-generation SOT-MRAM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 10, 'ns', 1]

SO
###Anatomy of Type-X Spin-Orbit Torque Switching|Yan-Ting Liu,Chao-Chung Huang,Kuan-Hao Chen,Yu-Hao Huang,Chia-Chin Tsai,Ting-Yu Chang,Chi-Feng Pai###
(1719815, 1719816)
 Our work provides a thorough examination oftype-x<missing VAR> SOT<missing VAR> scheme with various device/materials parameters, which can beinformative for designing next-generation SOT-MRAM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 10, 'ns', 1]

F
###Spin-scattering asymmetry at half-metallic ferromagnet/ferromagnet interface|Y. Fujita,Y. Miura,T. Sasaki,T. Nakatani,K. Hono,Y. Sakuraba###
(1719875, 1719875)
 We study spin-scattering asymmetry at the interface of two ferromagnets (FMs)based on a half-metallic Co2Fe0.4Mn0.6Si (CFM<missing VAR>S)/CoFe interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co2Fe0.4Mn0.6Si
###Spin-scattering asymmetry at half-metallic ferromagnet/ferromagnet interface|Y. Fujita,Y. Miura,T. Sasaki,T. Nakatani,K. Hono,Y. Sakuraba###
(1719890, 1719896)
 We study spin-scattering asymmetry at the interface of two ferromagnets (FMs)based on a half-metallic Co2Fe0.4Mn0.6Si (CFM<missing VAR>S)/CoFe interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.15,0.1,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CF
###Spin-scattering asymmetry at half-metallic ferromagnet/ferromagnet interface|Y. Fujita,Y. Miura,T. Sasaki,T. Nakatani,K. Hono,Y. Sakuraba###
(1719899, 1719900)
 We study spin-scattering asymmetry at the interface of two ferromagnets (FMs)based on a half-metallic Co2Fe0.4Mn0.6Si (CFM<missing VAR>S)/CoFe interface.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin-scattering asymmetry at half-metallic ferromagnet/ferromagnet interface|Y. Fujita,Y. Miura,T. Sasaki,T. Nakatani,K. Hono,Y. Sakuraba###
(1719902, 1719902)
 We study spin-scattering asymmetry at the interface of two ferromagnets (FMs)based on a half-metallic Co2Fe0.4Mn0.6Si (CFM<missing VAR>S)/CoFe interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFe
###Spin-scattering asymmetry at half-metallic ferromagnet/ferromagnet interface|Y. Fujita,Y. Miura,T. Sasaki,T. Nakatani,K. Hono,Y. Sakuraba###
(1719905, 1719906)
 We study spin-scattering asymmetry at the interface of two ferromagnets (FMs)based on a half-metallic Co2Fe0.4Mn0.6Si (CFM<missing VAR>S)/CoFe interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFe/CF
###Spin-scattering asymmetry at half-metallic ferromagnet/ferromagnet interface|Y. Fujita,Y. Miura,T. Sasaki,T. Nakatani,K. Hono,Y. Sakuraba###
(1719937, 1719941)
First-principles ballistic transport calculations based on Landauer formula for(001)-CoFe/CFM<missing VAR>S/CoFe indicate strong spin-dependent conductance at theCFM<missing VAR>S/CoFe interface, suggesting a large interface spin-scattering asymmetrycoefficient (gamma).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

S/CoFe
###Spin-scattering asymmetry at half-metallic ferromagnet/ferromagnet interface|Y. Fujita,Y. Miura,T. Sasaki,T. Nakatani,K. Hono,Y. Sakuraba###
(1719943, 1719946)
First-principles ballistic transport calculations based on Landauer formula for(001)-CoFe/CFM<missing VAR>S/CoFe indicate strong spin-dependent conductance at theCFM<missing VAR>S/CoFe interface, suggesting a large interface spin-scattering asymmetrycoefficient (gamma).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

CF
###Spin-scattering asymmetry at half-metallic ferromagnet/ferromagnet interface|Y. Fujita,Y. Miura,T. Sasaki,T. Nakatani,K. Hono,Y. Sakuraba###
(1719963, 1719964)
First-principles ballistic transport calculations based on Landauer formula for(001)-CoFe/CFM<missing VAR>S/CoFe indicate strong spin-dependent conductance at theCFM<missing VAR>S/CoFe interface, suggesting a large interface spin-scattering asymmetrycoefficient (gamma).
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S/CoFe
###Spin-scattering asymmetry at half-metallic ferromagnet/ferromagnet interface|Y. Fujita,Y. Miura,T. Sasaki,T. Nakatani,K. Hono,Y. Sakuraba###
(1719966, 1719969)
First-principles ballistic transport calculations based on Landauer formula for(001)-CoFe/CFM<missing VAR>S/CoFe indicate strong spin-dependent conductance at theCFM<missing VAR>S/CoFe interface, suggesting a large interface spin-scattering asymmetrycoefficient (gamma).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

CPP
###Spin-scattering asymmetry at half-metallic ferromagnet/ferromagnet interface|Y. Fujita,Y. Miura,T. Sasaki,T. Nakatani,K. Hono,Y. Sakuraba###
(1720014, 1720016)
 Fully epitaxial current-perpendicular-to-plane giantmagnetoresistance (CPP-GMR) pseudo-spin-valve (PSV) devices involvingCoFe/CFM<missing VAR>S/Ag/CFM<missing VAR>S/CoFe structures exhibit an enhancement in MR output owing tothe formation of the CFM<missing VAR>S/CoFe interface at room temperature (RT).
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(PSV)
###Spin-scattering asymmetry at half-metallic ferromagnet/ferromagnet interface|Y. Fujita,Y. Miura,T. Sasaki,T. Nakatani,K. Hono,Y. Sakuraba###
(1720029, 1720033)
 Fully epitaxial current-perpendicular-to-plane giantmagnetoresistance (CPP-GMR) pseudo-spin-valve (PSV) devices involvingCoFe/CFM<missing VAR>S/Ag/CFM<missing VAR>S/CoFe structures exhibit an enhancement in MR output owing tothe formation of the CFM<missing VAR>S/CoFe interface at room temperature (RT).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFe/CF
###Spin-scattering asymmetry at half-metallic ferromagnet/ferromagnet interface|Y. Fujita,Y. Miura,T. Sasaki,T. Nakatani,K. Hono,Y. Sakuraba###
(1720040, 1720044)
 Fully epitaxial current-perpendicular-to-plane giantmagnetoresistance (CPP-GMR) pseudo-spin-valve (PSV) devices involvingCoFe/CFM<missing VAR>S/Ag/CFM<missing VAR>S/CoFe structures exhibit an enhancement in MR output owing tothe formation of the CFM<missing VAR>S/CoFe interface at room temperature (RT).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

S/Ag/CF
###Spin-scattering asymmetry at half-metallic ferromagnet/ferromagnet interface|Y. Fujita,Y. Miura,T. Sasaki,T. Nakatani,K. Hono,Y. Sakuraba###
(1720046, 1720051)
 Fully epitaxial current-perpendicular-to-plane giantmagnetoresistance (CPP-GMR) pseudo-spin-valve (PSV) devices involvingCoFe/CFM<missing VAR>S/Ag/CFM<missing VAR>S/CoFe structures exhibit an enhancement in MR output owing tothe formation of the CFM<missing VAR>S/CoFe interface at room temperature (RT).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

S/CoFe
###Spin-scattering asymmetry at half-metallic ferromagnet/ferromagnet interface|Y. Fujita,Y. Miura,T. Sasaki,T. Nakatani,K. Hono,Y. Sakuraba###
(1720053, 1720056)
 Fully epitaxial current-perpendicular-to-plane giantmagnetoresistance (CPP-GMR) pseudo-spin-valve (PSV) devices involvingCoFe/CFM<missing VAR>S/Ag/CFM<missing VAR>S/CoFe structures exhibit an enhancement in MR output owing tothe formation of the CFM<missing VAR>S/CoFe interface at room temperature (RT).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

CF
###Spin-scattering asymmetry at half-metallic ferromagnet/ferromagnet interface|Y. Fujita,Y. Miura,T. Sasaki,T. Nakatani,K. Hono,Y. Sakuraba###
(1720086, 1720087)
 Fully epitaxial current-perpendicular-to-plane giantmagnetoresistance (CPP-GMR) pseudo-spin-valve (PSV) devices involvingCoFe/CFM<missing VAR>S/Ag/CFM<missing VAR>S/CoFe structures exhibit an enhancement in MR output owing tothe formation of the CFM<missing VAR>S/CoFe interface at room temperature (RT).
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S/CoFe
###Spin-scattering asymmetry at half-metallic ferromagnet/ferromagnet interface|Y. Fujita,Y. Miura,T. Sasaki,T. Nakatani,K. Hono,Y. Sakuraba###
(1720089, 1720092)
 Fully epitaxial current-perpendicular-to-plane giantmagnetoresistance (CPP-GMR) pseudo-spin-valve (PSV) devices involvingCoFe/CFM<missing VAR>S/Ag/CFM<missing VAR>S/CoFe structures exhibit an enhancement in MR output owing tothe formation of the CFM<missing VAR>S/CoFe interface at room temperature (RT).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

CF
###Spin-scattering asymmetry at half-metallic ferromagnet/ferromagnet interface|Y. Fujita,Y. Miura,T. Sasaki,T. Nakatani,K. Hono,Y. Sakuraba###
(1720161, 1720162)
 This is wellreproduced qualitatively by a simulation based on a generalized two-currentseries-resistor model with considering the presence of gamma at theCFM<missing VAR>S/CoFe interface, half-metallicity of CFM<missing VAR>S, and combinations of terminatedatoms at the interfaces in the CPP-GMR PSV structure.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S/CoFe
###Spin-scattering asymmetry at half-metallic ferromagnet/ferromagnet interface|Y. Fujita,Y. Miura,T. Sasaki,T. Nakatani,K. Hono,Y. Sakuraba###
(1720164, 1720167)
 This is wellreproduced qualitatively by a simulation based on a generalized two-currentseries-resistor model with considering the presence of gamma at theCFM<missing VAR>S/CoFe interface, half-metallicity of CFM<missing VAR>S, and combinations of terminatedatoms at the interfaces in the CPP-GMR PSV structure.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

CF
###Spin-scattering asymmetry at half-metallic ferromagnet/ferromagnet interface|Y. Fujita,Y. Miura,T. Sasaki,T. Nakatani,K. Hono,Y. Sakuraba###
(1720178, 1720179)
 This is wellreproduced qualitatively by a simulation based on a generalized two-currentseries-resistor model with considering the presence of gamma at theCFM<missing VAR>S/CoFe interface, half-metallicity of CFM<missing VAR>S, and combinations of terminatedatoms at the interfaces in the CPP-GMR PSV structure.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin-scattering asymmetry at half-metallic ferromagnet/ferromagnet interface|Y. Fujita,Y. Miura,T. Sasaki,T. Nakatani,K. Hono,Y. Sakuraba###
(1720181, 1720181)
 This is wellreproduced qualitatively by a simulation based on a generalized two-currentseries-resistor model with considering the presence of gamma at theCFM<missing VAR>S/CoFe interface, half-metallicity of CFM<missing VAR>S, and combinations of terminatedatoms at the interfaces in the CPP-GMR PSV structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CPP
###Spin-scattering asymmetry at half-metallic ferromagnet/ferromagnet interface|Y. Fujita,Y. Miura,T. Sasaki,T. Nakatani,K. Hono,Y. Sakuraba###
(1720205, 1720207)
 This is wellreproduced qualitatively by a simulation based on a generalized two-currentseries-resistor model with considering the presence of gamma at theCFM<missing VAR>S/CoFe interface, half-metallicity of CFM<missing VAR>S, and combinations of terminatedatoms at the interfaces in the CPP-GMR PSV structure.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PSV
###Spin-scattering asymmetry at half-metallic ferromagnet/ferromagnet interface|Y. Fujita,Y. Miura,T. Sasaki,T. Nakatani,K. Hono,Y. Sakuraba###
(1720213, 1720215)
 This is wellreproduced qualitatively by a simulation based on a generalized two-currentseries-resistor model with considering the presence of gamma at theCFM<missing VAR>S/CoFe interface, half-metallicity of CFM<missing VAR>S, and combinations of terminatedatoms at the interfaces in the CPP-GMR PSV structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Spin-scattering asymmetry at half-metallic ferromagnet/ferromagnet interface|Y. Fujita,Y. Miura,T. Sasaki,T. Nakatani,K. Hono,Y. Sakuraba###
(1720245, 1720245)
 We show direct evidencefor a large gamma at a half-metallic FM<missing VAR>/FM<missing VAR> interface and its impact onCPP-GMR effect even at RT.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Spin-scattering asymmetry at half-metallic ferromagnet/ferromagnet interface|Y. Fujita,Y. Miura,T. Sasaki,T. Nakatani,K. Hono,Y. Sakuraba###
(1720248, 1720248)
 We show direct evidencefor a large gamma at a half-metallic FM<missing VAR>/FM<missing VAR> interface and its impact onCPP-GMR effect even at RT.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CPP
###Spin-scattering asymmetry at half-metallic ferromagnet/ferromagnet interface|Y. Fujita,Y. Miura,T. Sasaki,T. Nakatani,K. Hono,Y. Sakuraba###
(1720262, 1720264)
 We show direct evidencefor a large gamma at a half-metallic FM<missing VAR>/FM<missing VAR> interface and its impact onCPP-GMR effect even at RT.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ca3Ru2O7
###The power of flexible lattice in Ca3Ru2O7: Exquisite control of the electrical transport via anisotropic magnetostriction|Hengdi Zhao,Hao Zheng,Jasminka Terzic,Wenhai Song,Yifei Ni,Yu Zhang,Pedro Schlottmann,Gang Cao###
(1720300, 1720305)
The power of flexible lattice in Ca3Ru2O7 Exquisite control of the electrical transport via anisotropic magnetostriction.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ca3Ru2O7
###The power of flexible lattice in Ca3Ru2O7: Exquisite control of the electrical transport via anisotropic magnetostriction|Hengdi Zhao,Hao Zheng,Jasminka Terzic,Wenhai Song,Yifei Ni,Yu Zhang,Pedro Schlottmann,Gang Cao###
(1720326, 1720331)
 Ca3Ru2O7 is a correlated and spin-orbit-coupled system with an extraordinaryanisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###The power of flexible lattice in Ca3Ru2O7: Exquisite control of the electrical transport via anisotropic magnetostriction|Hengdi Zhao,Hao Zheng,Jasminka Terzic,Wenhai Song,Yifei Ni,Yu Zhang,Pedro Schlottmann,Gang Cao###
(1720495, 1720495)
 This work focuses on the relationship between the latticeand transport properties along each crystalline axis and reveals thatapplication of magnetic field, H, along different crystalline axes readilystretches or shrinks the lattice in a uniaxial manner, resulting in distinctelectronic states.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###The power of flexible lattice in Ca3Ru2O7: Exquisite control of the electrical transport via anisotropic magnetostriction|Hengdi Zhao,Hao Zheng,Jasminka Terzic,Wenhai Song,Yifei Ni,Yu Zhang,Pedro Schlottmann,Gang Cao###
(1720588, 1720588)
 Furthermore, application of modest pressure drasticallyamplifies the anisotropic magnetoelastic effect, leading to either anoccurrence of a robust metallic state at H  hard axis or a reentrance of thenonmetallic state at H  easy axis.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###The power of flexible lattice in Ca3Ru2O7: Exquisite control of the electrical transport via anisotropic magnetostriction|Hengdi Zhao,Hao Zheng,Jasminka Terzic,Wenhai Song,Yifei Ni,Yu Zhang,Pedro Schlottmann,Gang Cao###
(1720612, 1720612)
 Furthermore, application of modest pressure drasticallyamplifies the anisotropic magnetoelastic effect, leading to either anoccurrence of a robust metallic state at H  hard axis or a reentrance of thenonmetallic state at H  easy axis.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ca3Ru2O7
###The power of flexible lattice in Ca3Ru2O7: Exquisite control of the electrical transport via anisotropic magnetostriction|Hengdi Zhao,Hao Zheng,Jasminka Terzic,Wenhai Song,Yifei Ni,Yu Zhang,Pedro Schlottmann,Gang Cao###
(1720620, 1720625)
 Ca3Ru2O7 presents a rare lattice-dependentmagnetotransport mechanism, in which the extraordinary lattice flexibilityenables an exquisite control of the electronic state via magneticallystretching or shrinking the crystalline axes, and the spin polarization playsan unconventional role unfavorable for maximizing conductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###The power of flexible lattice in Ca3Ru2O7: Exquisite control of the electrical transport via anisotropic magnetostriction|Hengdi Zhao,Hao Zheng,Jasminka Terzic,Wenhai Song,Yifei Ni,Yu Zhang,Pedro Schlottmann,Gang Cao###
(1720716, 1720716)
 At the heart ofthe intriguing physics is the anisotropic magnetostriction that leads to exoticstates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B2
###Sign reversal of magnetoresistivity in massive nodal-line semimetals due to Lifshitz transition of Fermi surface|Min-Xue Yang,Hao Geng,Wei Luo,Li Sheng,Wei Chen,D. Y. Xing###
(1721001, 1721002)
 We show that a small deformation of the Fermi surface yields a positiveMR propto B2, different from the negative MR by pure Berry curvature effectin other topological systems.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Sign reversal of magnetoresistivity in massive nodal-line semimetals due to Lifshitz transition of Fermi surface|Min-Xue Yang,Hao Geng,Wei Luo,Li Sheng,Wei Chen,D. Y. Xing###
(1721036, 1721036)
 As the magnetic field increases to a criticalvalue, a topological Lifshitz transition of the Fermi surface can be induced,and the MR inverts its sign at the same time.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CrOCl
###Metamagnetic Transitions in Few-Layer CrOCl Controlled by Magnetic Anisotropy Flipping|Minjie Zhang,Qifeng Hu,Chenqiang Hua,Man Cheng,Zhou Liu,Shijie Song,Fanggui Wang,Pimo He,Guang-Han Cao,Zhu-An Xu,Yunhao Lu,Jinbo Yang,Yi Zheng###
(1721236, 1721238)
Metamagnetic Transitions in Few-Layer CrOCl Controlled by Magnetic Anisotropy Flipping.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 2, 'D', 1],[395.0, 2, 'D', 6],[477.0, 2, 'D', 7]

CrOCl
###Metamagnetic Transitions in Few-Layer CrOCl Controlled by Magnetic Anisotropy Flipping|Minjie Zhang,Qifeng Hu,Chenqiang Hua,Man Cheng,Zhou Liu,Shijie Song,Fanggui Wang,Pimo He,Guang-Han Cao,Zhu-An Xu,Yunhao Lu,Jinbo Yang,Yi Zheng###
(1721370, 1721372)
 Here, using angle- and temperature-dependent tunnellingmagnetoresistance, we report unprecedented metamagnetic phase transitions inatomically-thin CrOCl, triggered by magnetic easy-axis flipping instead of theconventional spin flop mechanism.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 2, 'D', 1],[261.0, 2, 'D', 4],[343.0, 2, 'D', 5]

CrOCl
###Metamagnetic Transitions in Few-Layer CrOCl Controlled by Magnetic Anisotropy Flipping|Minjie Zhang,Qifeng Hu,Chenqiang Hua,Man Cheng,Zhou Liu,Shijie Song,Fanggui Wang,Pimo He,Guang-Han Cao,Zhu-An Xu,Yunhao Lu,Jinbo Yang,Yi Zheng###
(1721407, 1721409)
 Few-layer CrOCl tunnelling devices of variousthicknesses consistently show an in-plane antiferromagnetic (AFM) ground statewith the easy axis aligned along the Cr-O-Cr direction (b<missing VAR>-axis).
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 2, 'D', 2],[224.0, 2, 'D', 3],[306.0, 2, 'D', 4]

F
###Metamagnetic Transitions in Few-Layer CrOCl Controlled by Magnetic Anisotropy Flipping|Minjie Zhang,Qifeng Hu,Chenqiang Hua,Man Cheng,Zhou Liu,Shijie Song,Fanggui Wang,Pimo He,Guang-Han Cao,Zhu-An Xu,Yunhao Lu,Jinbo Yang,Yi Zheng###
(1721436, 1721436)
 Few-layer CrOCl tunnelling devices of variousthicknesses consistently show an in-plane antiferromagnetic (AFM) ground statewith the easy axis aligned along the Cr-O-Cr direction (b<missing VAR>-axis).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 2, 'D', 2],[197.0, 2, 'D', 3],[279.0, 2, 'D', 4]

Cr
###Metamagnetic Transitions in Few-Layer CrOCl Controlled by Magnetic Anisotropy Flipping|Minjie Zhang,Qifeng Hu,Chenqiang Hua,Man Cheng,Zhou Liu,Shijie Song,Fanggui Wang,Pimo He,Guang-Han Cao,Zhu-An Xu,Yunhao Lu,Jinbo Yang,Yi Zheng###
(1721459, 1721459)
 Few-layer CrOCl tunnelling devices of variousthicknesses consistently show an in-plane antiferromagnetic (AFM) ground statewith the easy axis aligned along the Cr-O-Cr direction (b<missing VAR>-axis).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 2, 'D', 2],[174.0, 2, 'D', 3],[256.0, 2, 'D', 4]

O
###Metamagnetic Transitions in Few-Layer CrOCl Controlled by Magnetic Anisotropy Flipping|Minjie Zhang,Qifeng Hu,Chenqiang Hua,Man Cheng,Zhou Liu,Shijie Song,Fanggui Wang,Pimo He,Guang-Han Cao,Zhu-An Xu,Yunhao Lu,Jinbo Yang,Yi Zheng###
(1721461, 1721461)
 Few-layer CrOCl tunnelling devices of variousthicknesses consistently show an in-plane antiferromagnetic (AFM) ground statewith the easy axis aligned along the Cr-O-Cr direction (b<missing VAR>-axis).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 2, 'D', 2],[172.0, 2, 'D', 3],[254.0, 2, 'D', 4]

Cr
###Metamagnetic Transitions in Few-Layer CrOCl Controlled by Magnetic Anisotropy Flipping|Minjie Zhang,Qifeng Hu,Chenqiang Hua,Man Cheng,Zhou Liu,Shijie Song,Fanggui Wang,Pimo He,Guang-Han Cao,Zhu-An Xu,Yunhao Lu,Jinbo Yang,Yi Zheng###
(1721463, 1721463)
 Few-layer CrOCl tunnelling devices of variousthicknesses consistently show an in-plane antiferromagnetic (AFM) ground statewith the easy axis aligned along the Cr-O-Cr direction (b<missing VAR>-axis).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 2, 'D', 2],[170.0, 2, 'D', 3],[252.0, 2, 'D', 4]

H
###Metamagnetic Transitions in Few-Layer CrOCl Controlled by Magnetic Anisotropy Flipping|Minjie Zhang,Qifeng Hu,Chenqiang Hua,Man Cheng,Zhou Liu,Shijie Song,Fanggui Wang,Pimo He,Guang-Han Cao,Zhu-An Xu,Yunhao Lu,Jinbo Yang,Yi Zheng###
(1721503, 1721503)
 Strikingly,with the presence of a magnetic field perpendicular to the easy-axis (Hc),magnetization of CrOCl does not follow the prevalent spin rotation andsaturation pattern, but rather exhibits an easy-axis flipping from the in-planeto out-of-plane directions.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 2, 'D', 3],[130.0, 2, 'D', 2],[212.0, 2, 'D', 3]

CrOCl
###Metamagnetic Transitions in Few-Layer CrOCl Controlled by Magnetic Anisotropy Flipping|Minjie Zhang,Qifeng Hu,Chenqiang Hua,Man Cheng,Zhou Liu,Shijie Song,Fanggui Wang,Pimo He,Guang-Han Cao,Zhu-An Xu,Yunhao Lu,Jinbo Yang,Yi Zheng###
(1721513, 1721515)
 Strikingly,with the presence of a magnetic field perpendicular to the easy-axis (Hc),magnetization of CrOCl does not follow the prevalent spin rotation andsaturation pattern, but rather exhibits an easy-axis flipping from the in-planeto out-of-plane directions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[198.0, 2, 'D', 3],[118.0, 2, 'D', 2],[200.0, 2, 'D', 3]

H
###Metamagnetic Transitions in Few-Layer CrOCl Controlled by Magnetic Anisotropy Flipping|Minjie Zhang,Qifeng Hu,Chenqiang Hua,Man Cheng,Zhou Liu,Shijie Song,Fanggui Wang,Pimo He,Guang-Han Cao,Zhu-An Xu,Yunhao Lu,Jinbo Yang,Yi Zheng###
(1721623, 1721623)
 Such magnetic anisotropy controlled metamagneticphase transitions are manifested by a drastic upturn in tun- nelling current,which shows anomalous shifts towards higher H when temperature increases.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[308.0, 2, 'D', 4],[10.0, 2, 'D', 1],[92.0, 2, 'D', 2]

H
###Metamagnetic Transitions in Few-Layer CrOCl Controlled by Magnetic Anisotropy Flipping|Minjie Zhang,Qifeng Hu,Chenqiang Hua,Man Cheng,Zhou Liu,Shijie Song,Fanggui Wang,Pimo He,Guang-Han Cao,Zhu-An Xu,Yunhao Lu,Jinbo Yang,Yi Zheng###
(1721658, 1721658)
 By 2Dmapping of tunnelling currents as a function of both temperature and H, wedetermine a unique ferrimagnetic state with a superstructure periodicity offive unit cells after the field-induced metam- agnetic transitions.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[343.0, 2, 'D', 5],[25.0, 2, 'D', 0],[57.0, 2, 'D', 1]

In
###Superconducting-like and magnetic transitions in oxygen-implanted diamond-like and amorphous carbon films, and in highly oriented pyrolytic graphite|Nadina Gheorghiu,Charles R. Ebbing,John P. Murphy,Benjamin T. Pierce,Timothy J. Haugan###
(1721797, 1721797)
 In our previously published work, we have reported colossalmagnetoresistance, Andreev oscillations, ferromagnetism, and granularsuperconductivity in oxygen-implanted carbon fibers, graphite foils, and highlyoriented pyrolytic graphite.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[194.0, 50, 'K', 3]

In
###Superconducting-like and magnetic transitions in oxygen-implanted diamond-like and amorphous carbon films, and in highly oriented pyrolytic graphite|Nadina Gheorghiu,Charles R. Ebbing,John P. Murphy,Benjamin T. Pierce,Timothy J. Haugan###
(1721863, 1721863)
 In this follow-up research, more results on theseoxygen-implanted graphite samples are presented.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 50, 'K', 2]

K
###Superconducting-like and magnetic transitions in oxygen-implanted diamond-like and amorphous carbon films, and in highly oriented pyrolytic graphite|Nadina Gheorghiu,Charles R. Ebbing,John P. Murphy,Benjamin T. Pierce,Timothy J. Haugan###
(1722026, 1722026)
 Below 50K, the films resistance oscillates between the high and low resistance states,less when the sample is under a transverse magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 50, 'K', 1]

H
###Superconducting-like and magnetic transitions in oxygen-implanted diamond-like and amorphous carbon films, and in highly oriented pyrolytic graphite|Nadina Gheorghiu,Charles R. Ebbing,John P. Murphy,Benjamin T. Pierce,Timothy J. Haugan###
(1722214, 1722214)
 Finally, the highlyoriented pyrolytic graphite samples resistance have a thermally activated termthat can be understood on the basis of the LAMH model applied to narrow SCchannels in which thermal fluctuations can cause phase slips.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[223.0, 50, 'K', 4]

SC
###Superconducting-like and magnetic transitions in oxygen-implanted diamond-like and amorphous carbon films, and in highly oriented pyrolytic graphite|Nadina Gheorghiu,Charles R. Ebbing,John P. Murphy,Benjamin T. Pierce,Timothy J. Haugan###
(1722224, 1722225)
 Finally, the highlyoriented pyrolytic graphite samples resistance have a thermally activated termthat can be understood on the basis of the LAMH model applied to narrow SCchannels in which thermal fluctuations can cause phase slips.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[233.0, 50, 'K', 4]

KTaO3
###Spin-charge interconversion in KTaO$_3$ two-dimensional electron gases|Luis M. Vicente-Arche,Julien Bréhin,Sara Varotto,Maxen Cosset-Cheneau,Srijani Mallik,Raphaël Salazar,Paul Noël,Diogo Castro Vaz,Felix Trier,Suvam Bhattacharya,Anke Sander,Patrick Le Fèvre,François Bertran,Guilhem Saiz,Gerbold Ménard,Nicolas Bergeal,Agnès Barthélémy,Hai Li,Chia-Ching Lin,Dmitri E. Nikonov,Ian A. Young,Julien Rault,Laurent Vila,Jean-Philippe Attané,Manuel Bibes###
(1722359, 1722362)
Spin-charge interconversion in KTaO3 two-dimensional electron gases.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[324.0, 2, 'DEGs', 8],[446.0, 2, 'DEG', 9],[472.0, 2, 'DEGs', 9]

In
###Spin-charge interconversion in KTaO$_3$ two-dimensional electron gases|Luis M. Vicente-Arche,Julien Bréhin,Sara Varotto,Maxen Cosset-Cheneau,Srijani Mallik,Raphaël Salazar,Paul Noël,Diogo Castro Vaz,Felix Trier,Suvam Bhattacharya,Anke Sander,Patrick Le Fèvre,François Bertran,Guilhem Saiz,Gerbold Ménard,Nicolas Bergeal,Agnès Barthélémy,Hai Li,Chia-Ching Lin,Dmitri E. Nikonov,Ian A. Young,Julien Rault,Laurent Vila,Jean-Philippe Attané,Manuel Bibes###
(1722403, 1722403)
 In particular, they can display non-reciprocalphenomena when time reversal symmetry is also broken, e.g.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[283.0, 2, 'DEGs', 6],[405.0, 2, 'DEG', 7],[431.0, 2, 'DEGs', 7]

I
###Spin-charge interconversion in KTaO$_3$ two-dimensional electron gases|Luis M. Vicente-Arche,Julien Bréhin,Sara Varotto,Maxen Cosset-Cheneau,Srijani Mallik,Raphaël Salazar,Paul Noël,Diogo Castro Vaz,Felix Trier,Suvam Bhattacharya,Anke Sander,Patrick Le Fèvre,François Bertran,Guilhem Saiz,Gerbold Ménard,Nicolas Bergeal,Agnès Barthélémy,Hai Li,Chia-Ching Lin,Dmitri E. Nikonov,Ian A. Young,Julien Rault,Laurent Vila,Jean-Philippe Attané,Manuel Bibes###
(1722481, 1722481)
 Examples include the direct and inverse Edelstein effects(DEE, IEE) that allow the interconversion between spin currents and chargecurrents.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, 2, 'DEGs', 4],[327.0, 2, 'DEG', 5],[353.0, 2, 'DEGs', 5]

I
###Spin-charge interconversion in KTaO$_3$ two-dimensional electron gases|Luis M. Vicente-Arche,Julien Bréhin,Sara Varotto,Maxen Cosset-Cheneau,Srijani Mallik,Raphaël Salazar,Paul Noël,Diogo Castro Vaz,Felix Trier,Suvam Bhattacharya,Anke Sander,Patrick Le Fèvre,François Bertran,Guilhem Saiz,Gerbold Ménard,Nicolas Bergeal,Agnès Barthélémy,Hai Li,Chia-Ching Lin,Dmitri E. Nikonov,Ian A. Young,Julien Rault,Laurent Vila,Jean-Philippe Attané,Manuel Bibes###
(1722516, 1722516)
 The DEE and IEE have been investigated in interfaces based on theperovskite SrTiO3 (ST<missing VAR>O), albeit in separate studies focusing on one or theother.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[170.0, 2, 'DEGs', 3],[292.0, 2, 'DEG', 4],[318.0, 2, 'DEGs', 4]

SrTiO3
###Spin-charge interconversion in KTaO$_3$ two-dimensional electron gases|Luis M. Vicente-Arche,Julien Bréhin,Sara Varotto,Maxen Cosset-Cheneau,Srijani Mallik,Raphaël Salazar,Paul Noël,Diogo Castro Vaz,Felix Trier,Suvam Bhattacharya,Anke Sander,Patrick Le Fèvre,François Bertran,Guilhem Saiz,Gerbold Ménard,Nicolas Bergeal,Agnès Barthélémy,Hai Li,Chia-Ching Lin,Dmitri E. Nikonov,Ian A. Young,Julien Rault,Laurent Vila,Jean-Philippe Attané,Manuel Bibes###
(1722539, 1722542)
 The DEE and IEE have been investigated in interfaces based on theperovskite SrTiO3 (ST<missing VAR>O), albeit in separate studies focusing on one or theother.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 2, 'DEGs', 3],[266.0, 2, 'DEG', 4],[292.0, 2, 'DEGs', 4]

S
###Spin-charge interconversion in KTaO$_3$ two-dimensional electron gases|Luis M. Vicente-Arche,Julien Bréhin,Sara Varotto,Maxen Cosset-Cheneau,Srijani Mallik,Raphaël Salazar,Paul Noël,Diogo Castro Vaz,Felix Trier,Suvam Bhattacharya,Anke Sander,Patrick Le Fèvre,François Bertran,Guilhem Saiz,Gerbold Ménard,Nicolas Bergeal,Agnès Barthélémy,Hai Li,Chia-Ching Lin,Dmitri E. Nikonov,Ian A. Young,Julien Rault,Laurent Vila,Jean-Philippe Attané,Manuel Bibes###
(1722545, 1722545)
 The DEE and IEE have been investigated in interfaces based on theperovskite SrTiO3 (ST<missing VAR>O), albeit in separate studies focusing on one or theother.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 2, 'DEGs', 3],[263.0, 2, 'DEG', 4],[289.0, 2, 'DEGs', 4]

O
###Spin-charge interconversion in KTaO$_3$ two-dimensional electron gases|Luis M. Vicente-Arche,Julien Bréhin,Sara Varotto,Maxen Cosset-Cheneau,Srijani Mallik,Raphaël Salazar,Paul Noël,Diogo Castro Vaz,Felix Trier,Suvam Bhattacharya,Anke Sander,Patrick Le Fèvre,François Bertran,Guilhem Saiz,Gerbold Ménard,Nicolas Bergeal,Agnès Barthélémy,Hai Li,Chia-Ching Lin,Dmitri E. Nikonov,Ian A. Young,Julien Rault,Laurent Vila,Jean-Philippe Attané,Manuel Bibes###
(1722547, 1722547)
 The DEE and IEE have been investigated in interfaces based on theperovskite SrTiO3 (ST<missing VAR>O), albeit in separate studies focusing on one or theother.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 2, 'DEGs', 3],[261.0, 2, 'DEG', 4],[287.0, 2, 'DEGs', 4]

I
###Spin-charge interconversion in KTaO$_3$ two-dimensional electron gases|Luis M. Vicente-Arche,Julien Bréhin,Sara Varotto,Maxen Cosset-Cheneau,Srijani Mallik,Raphaël Salazar,Paul Noël,Diogo Castro Vaz,Felix Trier,Suvam Bhattacharya,Anke Sander,Patrick Le Fèvre,François Bertran,Guilhem Saiz,Gerbold Ménard,Nicolas Bergeal,Agnès Barthélémy,Hai Li,Chia-Ching Lin,Dmitri E. Nikonov,Ian A. Young,Julien Rault,Laurent Vila,Jean-Philippe Attané,Manuel Bibes###
(1722639, 1722639)
 Here, we reportthe observation of both the DEE and IEE in a new interfacial two-dimensionalelectron gas (2DEG) based on the perovskite oxide KTaO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 2, 'DEGs', 1],[169.0, 2, 'DEG', 2],[195.0, 2, 'DEGs', 2]

KTaO3
###Spin-charge interconversion in KTaO$_3$ two-dimensional electron gases|Luis M. Vicente-Arche,Julien Bréhin,Sara Varotto,Maxen Cosset-Cheneau,Srijani Mallik,Raphaël Salazar,Paul Noël,Diogo Castro Vaz,Felix Trier,Suvam Bhattacharya,Anke Sander,Patrick Le Fèvre,François Bertran,Guilhem Saiz,Gerbold Ménard,Nicolas Bergeal,Agnès Barthélémy,Hai Li,Chia-Ching Lin,Dmitri E. Nikonov,Ian A. Young,Julien Rault,Laurent Vila,Jean-Philippe Attané,Manuel Bibes###
(1722677, 1722680)
 Here, we reportthe observation of both the DEE and IEE in a new interfacial two-dimensionalelectron gas (2DEG) based on the perovskite oxide KTaO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 2, 'DEGs', 1],[128.0, 2, 'DEG', 2],[154.0, 2, 'DEGs', 2]

Al
###Spin-charge interconversion in KTaO$_3$ two-dimensional electron gases|Luis M. Vicente-Arche,Julien Bréhin,Sara Varotto,Maxen Cosset-Cheneau,Srijani Mallik,Raphaël Salazar,Paul Noël,Diogo Castro Vaz,Felix Trier,Suvam Bhattacharya,Anke Sander,Patrick Le Fèvre,François Bertran,Guilhem Saiz,Gerbold Ménard,Nicolas Bergeal,Agnès Barthélémy,Hai Li,Chia-Ching Lin,Dmitri E. Nikonov,Ian A. Young,Julien Rault,Laurent Vila,Jean-Philippe Attané,Manuel Bibes###
(1722699, 1722699)
 We generate 2DEGsby the simple deposition of Al metal onto KTaO3 single crystals,characterize them by angle-resolved photoemission spectroscopy andmagnetotransport, and demonstrate the DEE through unidirectionalmagnetoresistance and the IEE by spin-pumping experiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 2, 'DEGs', 0],[109.0, 2, 'DEG', 1],[135.0, 2, 'DEGs', 1]

KTaO3
###Spin-charge interconversion in KTaO$_3$ two-dimensional electron gases|Luis M. Vicente-Arche,Julien Bréhin,Sara Varotto,Maxen Cosset-Cheneau,Srijani Mallik,Raphaël Salazar,Paul Noël,Diogo Castro Vaz,Felix Trier,Suvam Bhattacharya,Anke Sander,Patrick Le Fèvre,François Bertran,Guilhem Saiz,Gerbold Ménard,Nicolas Bergeal,Agnès Barthélémy,Hai Li,Chia-Ching Lin,Dmitri E. Nikonov,Ian A. Young,Julien Rault,Laurent Vila,Jean-Philippe Attané,Manuel Bibes###
(1722705, 1722708)
 We generate 2DEGsby the simple deposition of Al metal onto KTaO3 single crystals,characterize them by angle-resolved photoemission spectroscopy andmagnetotransport, and demonstrate the DEE through unidirectionalmagnetoresistance and the IEE by spin-pumping experiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 2, 'DEGs', 0],[100.0, 2, 'DEG', 1],[126.0, 2, 'DEGs', 1]

I
###Spin-charge interconversion in KTaO$_3$ two-dimensional electron gases|Luis M. Vicente-Arche,Julien Bréhin,Sara Varotto,Maxen Cosset-Cheneau,Srijani Mallik,Raphaël Salazar,Paul Noël,Diogo Castro Vaz,Felix Trier,Suvam Bhattacharya,Anke Sander,Patrick Le Fèvre,François Bertran,Guilhem Saiz,Gerbold Ménard,Nicolas Bergeal,Agnès Barthélémy,Hai Li,Chia-Ching Lin,Dmitri E. Nikonov,Ian A. Young,Julien Rault,Laurent Vila,Jean-Philippe Attané,Manuel Bibes###
(1722757, 1722757)
 We generate 2DEGsby the simple deposition of Al metal onto KTaO3 single crystals,characterize them by angle-resolved photoemission spectroscopy andmagnetotransport, and demonstrate the DEE through unidirectionalmagnetoresistance and the IEE by spin-pumping experiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 2, 'DEGs', 0],[51.0, 2, 'DEG', 1],[77.0, 2, 'DEGs', 1]

S
###Spin-charge interconversion in KTaO$_3$ two-dimensional electron gases|Luis M. Vicente-Arche,Julien Bréhin,Sara Varotto,Maxen Cosset-Cheneau,Srijani Mallik,Raphaël Salazar,Paul Noël,Diogo Castro Vaz,Felix Trier,Suvam Bhattacharya,Anke Sander,Patrick Le Fèvre,François Bertran,Guilhem Saiz,Gerbold Ménard,Nicolas Bergeal,Agnès Barthélémy,Hai Li,Chia-Ching Lin,Dmitri E. Nikonov,Ian A. Young,Julien Rault,Laurent Vila,Jean-Philippe Attané,Manuel Bibes###
(1722791, 1722791)
 We compare thespin-charge interconversion efficiency with that of ST<missing VAR>O-based interfaces,relate it to the 2DEG electronic structure, and give perspectives for theimplementation of KTaO3 2DEGs into spin-orbitronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 2, 'DEGs', 1],[17.0, 2, 'DEG', 0],[43.0, 2, 'DEGs', 0]

O
###Spin-charge interconversion in KTaO$_3$ two-dimensional electron gases|Luis M. Vicente-Arche,Julien Bréhin,Sara Varotto,Maxen Cosset-Cheneau,Srijani Mallik,Raphaël Salazar,Paul Noël,Diogo Castro Vaz,Felix Trier,Suvam Bhattacharya,Anke Sander,Patrick Le Fèvre,François Bertran,Guilhem Saiz,Gerbold Ménard,Nicolas Bergeal,Agnès Barthélémy,Hai Li,Chia-Ching Lin,Dmitri E. Nikonov,Ian A. Young,Julien Rault,Laurent Vila,Jean-Philippe Attané,Manuel Bibes###
(1722793, 1722793)
 We compare thespin-charge interconversion efficiency with that of ST<missing VAR>O-based interfaces,relate it to the 2DEG electronic structure, and give perspectives for theimplementation of KTaO3 2DEGs into spin-orbitronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 2, 'DEGs', 1],[15.0, 2, 'DEG', 0],[41.0, 2, 'DEGs', 0]

KTaO3
###Spin-charge interconversion in KTaO$_3$ two-dimensional electron gases|Luis M. Vicente-Arche,Julien Bréhin,Sara Varotto,Maxen Cosset-Cheneau,Srijani Mallik,Raphaël Salazar,Paul Noël,Diogo Castro Vaz,Felix Trier,Suvam Bhattacharya,Anke Sander,Patrick Le Fèvre,François Bertran,Guilhem Saiz,Gerbold Ménard,Nicolas Bergeal,Agnès Barthélémy,Hai Li,Chia-Ching Lin,Dmitri E. Nikonov,Ian A. Young,Julien Rault,Laurent Vila,Jean-Philippe Attané,Manuel Bibes###
(1722830, 1722833)
 We compare thespin-charge interconversion efficiency with that of ST<missing VAR>O-based interfaces,relate it to the 2DEG electronic structure, and give perspectives for theimplementation of KTaO3 2DEGs into spin-orbitronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 2, 'DEGs', 1],[22.0, 2, 'DEG', 0],[1.0, 2, 'DEGs', 0]

B
###Quantum critical behavior in magic-angle twisted bilayer graphene|Alexandre Jaoui,Ipsita Das,Giorgio Di Battista,Jaime Díez-Mérida,Xiaobo Lu,Kenji Watanabe,Takashi Taniguchi,Hiroaki Ishizuka,Leonid Levitov,Dmitri K. Efetov###
(1722894, 1722894)
 The flat bands of magic-angle twisted bilayer graphene (MATBG) hoststrongly-correlated electronic phases such as correlated insulators,superconductors and a strange-metal state.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Quantum critical behavior in magic-angle twisted bilayer graphene|Alexandre Jaoui,Ipsita Das,Giorgio Di Battista,Jaime Díez-Mérida,Xiaobo Lu,Kenji Watanabe,Takashi Taniguchi,Hiroaki Ishizuka,Leonid Levitov,Dmitri K. Efetov###
(1722963, 1722963)
 The latter state, believed to be keyfor understanding the electronic properties of MATBG<missing VAR>, is obscured by variousphase transitions and thus could not be unequivocally differentiated from ametal undergoing frequent electron-phonon collisions.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Quantum critical behavior in magic-angle twisted bilayer graphene|Alexandre Jaoui,Ipsita Das,Giorgio Di Battista,Jaime Díez-Mérida,Xiaobo Lu,Kenji Watanabe,Takashi Taniguchi,Hiroaki Ishizuka,Leonid Levitov,Dmitri K. Efetov###
(1723031, 1723031)
 Here, we report transportmeasurements in superconducting MATBG<missing VAR> in which the correlated insulator statesare suppressed by screening.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Quantum critical behavior in magic-angle twisted bilayer graphene|Alexandre Jaoui,Ipsita Das,Giorgio Di Battista,Jaime Díez-Mérida,Xiaobo Lu,Kenji Watanabe,Takashi Taniguchi,Hiroaki Ishizuka,Leonid Levitov,Dmitri K. Efetov###
(1723154, 1723154)
 In contrast, nearcharge neutrality or a fully-filled flat band, as well as for devices twistedaway from the magic angle, we observe the archetypal Fermi liquid behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Quantum critical behavior in magic-angle twisted bilayer graphene|Alexandre Jaoui,Ipsita Das,Giorgio Di Battista,Jaime Díez-Mérida,Xiaobo Lu,Kenji Watanabe,Takashi Taniguchi,Hiroaki Ishizuka,Leonid Levitov,Dmitri K. Efetov###
(1723321, 1723321)
 Further, we observe a transition to the strange metal upon suppressionof the superconducting order, suggesting a relationship between quantumfluctuations and superconductivity in MATBG<missing VAR>.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SnTe
###Large linear magnetoresistance and evidence of degeneracy lifting of valence bands in rhombohedral phase of topological crystalline insulator SnTe|Sonali Baral,Mukesh Kumar Dasoundhi,Indu Rajput,Devendra Kumar,Archana Lakhani###
(1723369, 1723370)
Large linear magnetoresistance and evidence of degeneracy lifting of valence bands in rhombohedral phase of topological crystalline insulator SnTe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 64, ',', 2],[146.0, 77, ',', 2],[210.0, 42, '%', 3],[214.0, 5, 'K', 3],[217.0, 8, 'T', 3],[355.0, 2, 'K', 5]

I
###Large linear magnetoresistance and evidence of degeneracy lifting of valence bands in rhombohedral phase of topological crystalline insulator SnTe|Sonali Baral,Mukesh Kumar Dasoundhi,Indu Rajput,Devendra Kumar,Archana Lakhani###
(1723407, 1723407)
 We report a comprehensive magneto-transport study on single crystallinep<missing VAR>-type topological crystalline insulator (T<missing VAR>CI) SnTe, across thecubic-to-rhombohedral (R3m) transition which occurs as a function oftemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 64, ',', 1],[109.0, 77, ',', 1],[173.0, 42, '%', 2],[177.0, 5, 'K', 2],[180.0, 8, 'T', 2],[318.0, 2, 'K', 4]

SnTe
###Large linear magnetoresistance and evidence of degeneracy lifting of valence bands in rhombohedral phase of topological crystalline insulator SnTe|Sonali Baral,Mukesh Kumar Dasoundhi,Indu Rajput,Devendra Kumar,Archana Lakhani###
(1723410, 1723411)
 We report a comprehensive magneto-transport study on single crystallinep<missing VAR>-type topological crystalline insulator (T<missing VAR>CI) SnTe, across thecubic-to-rhombohedral (R3m) transition which occurs as a function oftemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 64, ',', 1],[105.0, 77, ',', 1],[169.0, 42, '%', 2],[173.0, 5, 'K', 2],[176.0, 8, 'T', 2],[314.0, 2, 'K', 4]

SnTe
###Large linear magnetoresistance and evidence of degeneracy lifting of valence bands in rhombohedral phase of topological crystalline insulator SnTe|Sonali Baral,Mukesh Kumar Dasoundhi,Indu Rajput,Devendra Kumar,Archana Lakhani###
(1723463, 1723464)
 The electrical resistivity of a well-characterized SnTe crystalshows evidence for the cubic-to-rhombohedral structural transition at Tssim64,K and a carrier density of sim1.8times1020 at 77,K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 64, ',', 0],[52.0, 77, ',', 0],[116.0, 42, '%', 1],[120.0, 5, 'K', 1],[123.0, 8, 'T', 1],[261.0, 2, 'K', 3]

K
###Large linear magnetoresistance and evidence of degeneracy lifting of valence bands in rhombohedral phase of topological crystalline insulator SnTe|Sonali Baral,Mukesh Kumar Dasoundhi,Indu Rajput,Devendra Kumar,Archana Lakhani###
(1723496, 1723496)
 The electrical resistivity of a well-characterized SnTe crystalshows evidence for the cubic-to-rhombohedral structural transition at Tssim64,K and a carrier density of sim1.8times1020 at 77,K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 64, ',', 0],[20.0, 77, ',', 0],[84.0, 42, '%', 1],[88.0, 5, 'K', 1],[91.0, 8, 'T', 1],[229.0, 2, 'K', 3]

K
###Large linear magnetoresistance and evidence of degeneracy lifting of valence bands in rhombohedral phase of topological crystalline insulator SnTe|Sonali Baral,Mukesh Kumar Dasoundhi,Indu Rajput,Devendra Kumar,Archana Lakhani###
(1723518, 1723518)
 The electrical resistivity of a well-characterized SnTe crystalshows evidence for the cubic-to-rhombohedral structural transition at Tssim64,K and a carrier density of sim1.8times1020 at 77,K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 64, ',', 0],[2.0, 77, ',', 0],[62.0, 42, '%', 1],[66.0, 5, 'K', 1],[69.0, 8, 'T', 1],[207.0, 2, 'K', 3]

As
###Large linear magnetoresistance and evidence of degeneracy lifting of valence bands in rhombohedral phase of topological crystalline insulator SnTe|Sonali Baral,Mukesh Kumar Dasoundhi,Indu Rajput,Devendra Kumar,Archana Lakhani###
(1723521, 1723521)
 As afunction of applied magnetic field perpendicular to the (100) plane, SnTeexhibits a large unsaturated linear magnetoresistance (LMR) reaching a value of42% at 5K and 8T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 64, ',', 1],[5.0, 77, ',', 1],[59.0, 42, '%', 0],[63.0, 5, 'K', 0],[66.0, 8, 'T', 0],[204.0, 2, 'K', 2]

SnTe
###Large linear magnetoresistance and evidence of degeneracy lifting of valence bands in rhombohedral phase of topological crystalline insulator SnTe|Sonali Baral,Mukesh Kumar Dasoundhi,Indu Rajput,Devendra Kumar,Archana Lakhani###
(1723549, 1723550)
 As afunction of applied magnetic field perpendicular to the (100) plane, SnTeexhibits a large unsaturated linear magnetoresistance (LMR) reaching a value of42% at 5K and 8T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 64, ',', 1],[33.0, 77, ',', 1],[30.0, 42, '%', 0],[34.0, 5, 'K', 0],[37.0, 8, 'T', 0],[175.0, 2, 'K', 2]

H
###Large linear magnetoresistance and evidence of degeneracy lifting of valence bands in rhombohedral phase of topological crystalline insulator SnTe|Sonali Baral,Mukesh Kumar Dasoundhi,Indu Rajput,Devendra Kumar,Archana Lakhani###
(1723673, 1723673)
 We also observe SdH oscillations in therhombohedral (R3m) phase with a Berry phase of pi and significantly lowercarrier density sim5.32times1011cm-2 at 2K, which providesdirect evidence of protected topological surface states in the (R3m) phase.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 64, ',', 3],[157.0, 77, ',', 3],[93.0, 42, '%', 2],[89.0, 5, 'K', 2],[86.0, 8, 'T', 2],[52.0, 2, 'K', 0]

SnTe
###Large linear magnetoresistance and evidence of degeneracy lifting of valence bands in rhombohedral phase of topological crystalline insulator SnTe|Sonali Baral,Mukesh Kumar Dasoundhi,Indu Rajput,Devendra Kumar,Archana Lakhani###
(1723890, 1723891)
 The overallresults indicate that magneto-transport studies can distinctly probe thesurface and bulk sensitive properties of SnTe, and can also track theband-splitting of degenerate bands at the Fermi level across thecubic-to-rhombohedral (R3m) transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[396.0, 64, ',', 5],[374.0, 77, ',', 5],[310.0, 42, '%', 4],[306.0, 5, 'K', 4],[303.0, 8, 'T', 4],[165.0, 2, 'K', 2]

IrCrMn
###IrCrMnZ (Z=Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study|Tufan Roy,Masahito Tsujikawa,Masafumi Shirai###
(1723951, 1723953)
IrCrMnZ<missing VAR> (Z<missing VAR>Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions A first-principles study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[196.0, 1300, 'K', 3]

Al
###IrCrMnZ (Z=Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study|Tufan Roy,Masahito Tsujikawa,Masafumi Shirai###
(1723958, 1723958)
IrCrMnZ<missing VAR> (Z<missing VAR>Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions A first-principles study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[191.0, 1300, 'K', 3]

Ga
###IrCrMnZ (Z=Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study|Tufan Roy,Masahito Tsujikawa,Masafumi Shirai###
(1723961, 1723961)
IrCrMnZ<missing VAR> (Z<missing VAR>Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions A first-principles study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 1300, 'K', 3]

Si
###IrCrMnZ (Z=Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study|Tufan Roy,Masahito Tsujikawa,Masafumi Shirai###
(1723964, 1723964)
IrCrMnZ<missing VAR> (Z<missing VAR>Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions A first-principles study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[185.0, 1300, 'K', 3]

Ge
###IrCrMnZ (Z=Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study|Tufan Roy,Masahito Tsujikawa,Masafumi Shirai###
(1723967, 1723967)
IrCrMnZ<missing VAR> (Z<missing VAR>Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions A first-principles study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[182.0, 1300, 'K', 3]

MgO
###IrCrMnZ (Z=Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study|Tufan Roy,Masahito Tsujikawa,Masafumi Shirai###
(1723982, 1723983)
IrCrMnZ<missing VAR> (Z<missing VAR>Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions A first-principles study.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 1300, 'K', 3]

IrCrMn
###IrCrMnZ (Z=Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study|Tufan Roy,Masahito Tsujikawa,Masafumi Shirai###
(1724006, 1724008)
 We study IrCrMnZ<missing VAR> (Z<missing VAR>Al, Ga, Si, Ge) systems using first-principlescalculations from the perspective of their application as the electrodematerials of MgO-based MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 1300, 'K', 2]

Al
###IrCrMnZ (Z=Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study|Tufan Roy,Masahito Tsujikawa,Masafumi Shirai###
(1724013, 1724013)
 We study IrCrMnZ<missing VAR> (Z<missing VAR>Al, Ga, Si, Ge) systems using first-principlescalculations from the perspective of their application as the electrodematerials of MgO-based MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 1300, 'K', 2]

Ga
###IrCrMnZ (Z=Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study|Tufan Roy,Masahito Tsujikawa,Masafumi Shirai###
(1724016, 1724016)
 We study IrCrMnZ<missing VAR> (Z<missing VAR>Al, Ga, Si, Ge) systems using first-principlescalculations from the perspective of their application as the electrodematerials of MgO-based MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 1300, 'K', 2]

Si
###IrCrMnZ (Z=Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study|Tufan Roy,Masahito Tsujikawa,Masafumi Shirai###
(1724019, 1724019)
 We study IrCrMnZ<missing VAR> (Z<missing VAR>Al, Ga, Si, Ge) systems using first-principlescalculations from the perspective of their application as the electrodematerials of MgO-based MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 1300, 'K', 2]

Ge
###IrCrMnZ (Z=Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study|Tufan Roy,Masahito Tsujikawa,Masafumi Shirai###
(1724022, 1724022)
 We study IrCrMnZ<missing VAR> (Z<missing VAR>Al, Ga, Si, Ge) systems using first-principlescalculations from the perspective of their application as the electrodematerials of MgO-based MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 1300, 'K', 2]

MgO
###IrCrMnZ (Z=Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study|Tufan Roy,Masahito Tsujikawa,Masafumi Shirai###
(1724059, 1724060)
 We study IrCrMnZ<missing VAR> (Z<missing VAR>Al, Ga, Si, Ge) systems using first-principlescalculations from the perspective of their application as the electrodematerials of MgO-based MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 1300, 'K', 2]

IrCrMnAl
###IrCrMnZ (Z=Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study|Tufan Roy,Masahito Tsujikawa,Masafumi Shirai###
(1724129, 1724132)
 TheCurie temperatures of IrCrMnAl and IrCrMnGa are very high (above 1300 K) aspredicted from mean-field-approximation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 1300, 'K', 0]

IrCrMnGa
###IrCrMnZ (Z=Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study|Tufan Roy,Masahito Tsujikawa,Masafumi Shirai###
(1724136, 1724139)
 TheCurie temperatures of IrCrMnAl and IrCrMnGa are very high (above 1300 K) aspredicted from mean-field-approximation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.25,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 1300, 'K', 0]

IrCrMn
###IrCrMnZ (Z=Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study|Tufan Roy,Masahito Tsujikawa,Masafumi Shirai###
(1724242, 1724244)
 Further,we investigate the electronic structure of IrCrMnZ<missing VAR>/MgO heterojunction along(001) direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 1300, 'K', 3]

MgO
###IrCrMnZ (Z=Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study|Tufan Roy,Masahito Tsujikawa,Masafumi Shirai###
(1724247, 1724248)
 Further,we investigate the electronic structure of IrCrMnZ<missing VAR>/MgO heterojunction along(001) direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 1300, 'K', 3]

IrCrMnAl/MgO
###IrCrMnZ (Z=Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study|Tufan Roy,Masahito Tsujikawa,Masafumi Shirai###
(1724262, 1724268)
 IrCrMnAl/MgO and IrCrMnGa/MgO maintain half-metallicity evenat the MgO interface, with no interfacial states at/around Fermi level in theminority-spin channel.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[113.0, 1300, 'K', 4]

IrCrMnGa/MgO
###IrCrMnZ (Z=Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study|Tufan Roy,Masahito Tsujikawa,Masafumi Shirai###
(1724272, 1724278)
 IrCrMnAl/MgO and IrCrMnGa/MgO maintain half-metallicity evenat the MgO interface, with no interfacial states at/around Fermi level in theminority-spin channel.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[123.0, 1300, 'K', 4]

MgO
###IrCrMnZ (Z=Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study|Tufan Roy,Masahito Tsujikawa,Masafumi Shirai###
(1724293, 1724294)
 IrCrMnAl/MgO and IrCrMnGa/MgO maintain half-metallicity evenat the MgO interface, with no interfacial states at/around Fermi level in theminority-spin channel.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 1300, 'K', 4]

IrCrMnAl/MgO/IrCrMnAl
###IrCrMnZ (Z=Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study|Tufan Roy,Masahito Tsujikawa,Masafumi Shirai###
(1724337, 1724348)
 Large majority-spin conductance of IrCrMnAl/MgO/IrCrMnAland IrCrMnGa/MgO/IrCrMnGa is reported from the calculation of ballisticspin-transport property for parallel magnetization configuration.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[188.0, 1300, 'K', 5]

IrCrMnGa/MgO/IrCrMnGa
###IrCrMnZ (Z=Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study|Tufan Roy,Masahito Tsujikawa,Masafumi Shirai###
(1724353, 1724364)
 Large majority-spin conductance of IrCrMnAl/MgO/IrCrMnAland IrCrMnGa/MgO/IrCrMnGa is reported from the calculation of ballisticspin-transport property for parallel magnetization configuration.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[204.0, 1300, 'K', 5]

IrCrMnAl/MgO/IrCrMnAl
###IrCrMnZ (Z=Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study|Tufan Roy,Masahito Tsujikawa,Masafumi Shirai###
(1724401, 1724412)
 We proposeIrCrMnAl/MgO/IrCrMnAl and IrCrMnGa/MgO/IrCrMnGa as promising MTJs with a weakertemperature dependence of tunneling magnetoresistance ratio, owing to theirvery high Curie temperatures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[252.0, 1300, 'K', 6]

IrCrMnGa/MgO/IrCrMnGa
###IrCrMnZ (Z=Al, Ga, Si, Ge) Heusler alloys as electrode materials for MgO-based magnetic tunneling junctions: A first-principles study|Tufan Roy,Masahito Tsujikawa,Masafumi Shirai###
(1724416, 1724427)
 We proposeIrCrMnAl/MgO/IrCrMnAl and IrCrMnGa/MgO/IrCrMnGa as promising MTJs with a weakertemperature dependence of tunneling magnetoresistance ratio, owing to theirvery high Curie temperatures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[267.0, 1300, 'K', 6]

(OSCs)
###Distinguishing spin pumping from spin rectification in organic semiconductor-based lateral spin pumping device architectures|Piotr Skalski,Olga Zadvorna,Deepak Venkateshvaran,Henning Sirringhaus###
(1724570, 1724574)
 Over the last two decades organic spintronics has developed into a strivingfield with exciting reports of long spin diffusion lengths and spin relaxationtimes in organic semiconductors (OSCs).
Featurization successful!
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OSCs
###Distinguishing spin pumping from spin rectification in organic semiconductor-based lateral spin pumping device architectures|Piotr Skalski,Olga Zadvorna,Deepak Venkateshvaran,Henning Sirringhaus###
(1724586, 1724588)
 Easily processed and inexpensive, OSCsare considered a potential alternative to inorganic materials for use inspintronic applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Distinguishing spin pumping from spin rectification in organic semiconductor-based lateral spin pumping device architectures|Piotr Skalski,Olga Zadvorna,Deepak Venkateshvaran,Henning Sirringhaus###
(1724742, 1724742)
 In this work we show that the widely-used control experiments likelinear power dependence and inversion of the signal with the magnetic field arenot sufficient evidence of spin transport and can lead to an incorrectinterpretation of the signal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Distinguishing spin pumping from spin rectification in organic semiconductor-based lateral spin pumping device architectures|Piotr Skalski,Olga Zadvorna,Deepak Venkateshvaran,Henning Sirringhaus###
(1724872, 1724872)
 Here, we use in-plane angular dependentmeasurements to separate pure spin signal from parasitic effects arising fromspin rectification (SR<missing VAR>Es).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Es
###Distinguishing spin pumping from spin rectification in organic semiconductor-based lateral spin pumping device architectures|Piotr Skalski,Olga Zadvorna,Deepak Venkateshvaran,Henning Sirringhaus###
(1724874, 1724874)
 Here, we use in-plane angular dependentmeasurements to separate pure spin signal from parasitic effects arising fromspin rectification (SR<missing VAR>Es).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0
Abstract does not contain any numbers.

H
###Distinguishing spin pumping from spin rectification in organic semiconductor-based lateral spin pumping device architectures|Piotr Skalski,Olga Zadvorna,Deepak Venkateshvaran,Henning Sirringhaus###
(1724907, 1724907)
 Apart from well established anisotropicmagnetoresistance (AMR) and anomalous Hall effect (AHE), we observed a noveleffect which we call spurious inverse spin Hall effect (ISHE).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ISH
###Distinguishing spin pumping from spin rectification in organic semiconductor-based lateral spin pumping device architectures|Piotr Skalski,Olga Zadvorna,Deepak Venkateshvaran,Henning Sirringhaus###
(1724940, 1724942)
 Apart from well established anisotropicmagnetoresistance (AMR) and anomalous Hall effect (AHE), we observed a noveleffect which we call spurious inverse spin Hall effect (ISHE).
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

ISH
###Distinguishing spin pumping from spin rectification in organic semiconductor-based lateral spin pumping device architectures|Piotr Skalski,Olga Zadvorna,Deepak Venkateshvaran,Henning Sirringhaus###
(1724954, 1724956)
 It stronglyresembles ISHE<missing VAR> behaviour, but arises in the ferromagnet rather than thedetector meaning this additional effect has to be considered in future work.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoO
###Electrical switching of antiferromagnetic CoO | Pt across the Néel temperature|M. J. Grzybowski,C. F. Schippers,M. E. Bal,K. Rubi,U. Zeitler,M. Foltyn,B. Koopmans,H. J. M. Swagten###
(1725020, 1725021)
Electrical switching of antiferromagnetic CoO  Pt across the Nel temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Electrical switching of antiferromagnetic CoO | Pt across the Néel temperature|M. J. Grzybowski,C. F. Schippers,M. E. Bal,K. Rubi,U. Zeitler,M. Foltyn,B. Koopmans,H. J. M. Swagten###
(1725024, 1725024)
Electrical switching of antiferromagnetic CoO  Pt across the Nel temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Electrical switching of antiferromagnetic CoO | Pt across the Néel temperature|M. J. Grzybowski,C. F. Schippers,M. E. Bal,K. Rubi,U. Zeitler,M. Foltyn,B. Koopmans,H. J. M. Swagten###
(1725030, 1725030)
Electrical switching of antiferromagnetic CoO  Pt across the Nel temperature.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Electrical switching of antiferromagnetic CoO | Pt across the Néel temperature|M. J. Grzybowski,C. F. Schippers,M. E. Bal,K. Rubi,U. Zeitler,M. Foltyn,B. Koopmans,H. J. M. Swagten###
(1725067, 1725067)
 One of the most important challenges in antiferromagnetic spintronics is theread-out of the Neel vector state.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoOPt
###Electrical switching of antiferromagnetic CoO | Pt across the Néel temperature|M. J. Grzybowski,C. F. Schippers,M. E. Bal,K. Rubi,U. Zeitler,M. Foltyn,B. Koopmans,H. J. M. Swagten###
(1725179, 1725181)
 To overcome this problem, we present a temperaturedependence study of the transverse resistance changes in the switchingexperiment with CoOPt devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Electrical switching of antiferromagnetic CoO | Pt across the Néel temperature|M. J. Grzybowski,C. F. Schippers,M. E. Bal,K. Rubi,U. Zeitler,M. Foltyn,B. Koopmans,H. J. M. Swagten###
(1725245, 1725245)
 We demonstrate the possibility to extract apattern of spin Hall magnetoresistance for current pulses density of 5 times107 Acm-2 that is present only below the Neel temperature and does notfollow a trend expected for thermal effects.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe5-xGeTe2
###Weak Antilocalization Effect up to ~ 120 K in the van der Waals Crystal Fe5-xGeTe2 with Near Room Temperature Ferromagnetism|Zhengxian Li,Kui Huang,Deping Guo,Guodong Ma,Xiaolei Liu,Yueshen Wu,Jian Yuan,Zicheng Tao,Binbin Wang,Xia Wang,Zhiqiang Zou,Na Yu,Geliang Yu,Jiamin Xue,Jun Li,Zhongkai Liu,Wei Ji,Yanfeng Guo###
(1725438, 1725444)
Weak Antilocalization Effect up to  120 K in the van der Waals Crystal Fe5-xGeTe2 with Near Room Temperature Ferromagnetism.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[14.0, 120, 'K', 0],[121.0, 270, 'K', 2],[139.0, 120, 'K', 2],[222.0, 60, 'K', 4],[334.0, 120, 'K', 5]

W
###Weak Antilocalization Effect up to ~ 120 K in the van der Waals Crystal Fe5-xGeTe2 with Near Room Temperature Ferromagnetism|Zhengxian Li,Kui Huang,Deping Guo,Guodong Ma,Xiaolei Liu,Yueshen Wu,Jian Yuan,Zicheng Tao,Binbin Wang,Xia Wang,Zhiqiang Zou,Na Yu,Geliang Yu,Jiamin Xue,Jun Li,Zhongkai Liu,Wei Ji,Yanfeng Guo###
(1725464, 1725464)
 The weak antilocalization (WAL) effect is known as a quantum correction tothe classical conductivity, which never appeared in two-dimensional magnets.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 120, 'K', 1],[101.0, 270, 'K', 1],[119.0, 120, 'K', 1],[202.0, 60, 'K', 3],[314.0, 120, 'K', 4]

In
###Weak Antilocalization Effect up to ~ 120 K in the van der Waals Crystal Fe5-xGeTe2 with Near Room Temperature Ferromagnetism|Zhengxian Li,Kui Huang,Deping Guo,Guodong Ma,Xiaolei Liu,Yueshen Wu,Jian Yuan,Zicheng Tao,Binbin Wang,Xia Wang,Zhiqiang Zou,Na Yu,Geliang Yu,Jiamin Xue,Jun Li,Zhongkai Liu,Wei Ji,Yanfeng Guo###
(1725508, 1725508)
 Inthis work, we reported the observation of a WAL<missing VAR> effect in the van der Waalsferromagnet Fe5-xGeTe2 with a Curie temperature Tc  270 K, which can evenreach as high as  120 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 120, 'K', 2],[57.0, 270, 'K', 0],[75.0, 120, 'K', 0],[158.0, 60, 'K', 2],[270.0, 120, 'K', 3]

W
###Weak Antilocalization Effect up to ~ 120 K in the van der Waals Crystal Fe5-xGeTe2 with Near Room Temperature Ferromagnetism|Zhengxian Li,Kui Huang,Deping Guo,Guodong Ma,Xiaolei Liu,Yueshen Wu,Jian Yuan,Zicheng Tao,Binbin Wang,Xia Wang,Zhiqiang Zou,Na Yu,Geliang Yu,Jiamin Xue,Jun Li,Zhongkai Liu,Wei Ji,Yanfeng Guo###
(1725528, 1725528)
 Inthis work, we reported the observation of a WAL<missing VAR> effect in the van der Waalsferromagnet Fe5-xGeTe2 with a Curie temperature Tc  270 K, which can evenreach as high as  120 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 120, 'K', 2],[37.0, 270, 'K', 0],[55.0, 120, 'K', 0],[138.0, 60, 'K', 2],[250.0, 120, 'K', 3]

Fe5-xGeTe2
###Weak Antilocalization Effect up to ~ 120 K in the van der Waals Crystal Fe5-xGeTe2 with Near Room Temperature Ferromagnetism|Zhengxian Li,Kui Huang,Deping Guo,Guodong Ma,Xiaolei Liu,Yueshen Wu,Jian Yuan,Zicheng Tao,Binbin Wang,Xia Wang,Zhiqiang Zou,Na Yu,Geliang Yu,Jiamin Xue,Jun Li,Zhongkai Liu,Wei Ji,Yanfeng Guo###
(1725547, 1725553)
 Inthis work, we reported the observation of a WAL<missing VAR> effect in the van der Waalsferromagnet Fe5-xGeTe2 with a Curie temperature Tc  270 K, which can evenreach as high as  120 K.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[123.0, 120, 'K', 2],[12.0, 270, 'K', 0],[30.0, 120, 'K', 0],[113.0, 60, 'K', 2],[225.0, 120, 'K', 3]

Tc
###Weak Antilocalization Effect up to ~ 120 K in the van der Waals Crystal Fe5-xGeTe2 with Near Room Temperature Ferromagnetism|Zhengxian Li,Kui Huang,Deping Guo,Guodong Ma,Xiaolei Liu,Yueshen Wu,Jian Yuan,Zicheng Tao,Binbin Wang,Xia Wang,Zhiqiang Zou,Na Yu,Geliang Yu,Jiamin Xue,Jun Li,Zhongkai Liu,Wei Ji,Yanfeng Guo###
(1725563, 1725563)
 Inthis work, we reported the observation of a WAL<missing VAR> effect in the van der Waalsferromagnet Fe5-xGeTe2 with a Curie temperature Tc  270 K, which can evenreach as high as  120 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 120, 'K', 2],[2.0, 270, 'K', 0],[20.0, 120, 'K', 0],[103.0, 60, 'K', 2],[215.0, 120, 'K', 3]

W
###Weak Antilocalization Effect up to ~ 120 K in the van der Waals Crystal Fe5-xGeTe2 with Near Room Temperature Ferromagnetism|Zhengxian Li,Kui Huang,Deping Guo,Guodong Ma,Xiaolei Liu,Yueshen Wu,Jian Yuan,Zicheng Tao,Binbin Wang,Xia Wang,Zhiqiang Zou,Na Yu,Geliang Yu,Jiamin Xue,Jun Li,Zhongkai Liu,Wei Ji,Yanfeng Guo###
(1725588, 1725588)
 The WAL<missing VAR> effect could be well described by theHikami-Larkin-Nagaoka and Maekawa-Fukuyama theories in the presence of strongspin-orbit coupling (SOC).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 120, 'K', 3],[23.0, 270, 'K', 1],[5.0, 120, 'K', 1],[78.0, 60, 'K', 1],[190.0, 120, 'K', 2]

(SOC)
###Weak Antilocalization Effect up to ~ 120 K in the van der Waals Crystal Fe5-xGeTe2 with Near Room Temperature Ferromagnetism|Zhengxian Li,Kui Huang,Deping Guo,Guodong Ma,Xiaolei Liu,Yueshen Wu,Jian Yuan,Zicheng Tao,Binbin Wang,Xia Wang,Zhiqiang Zou,Na Yu,Geliang Yu,Jiamin Xue,Jun Li,Zhongkai Liu,Wei Ji,Yanfeng Guo###
(1725638, 1725642)
 The WAL<missing VAR> effect could be well described by theHikami-Larkin-Nagaoka and Maekawa-Fukuyama theories in the presence of strongspin-orbit coupling (SOC).
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[214.0, 120, 'K', 3],[73.0, 270, 'K', 1],[55.0, 120, 'K', 1],[24.0, 60, 'K', 1],[136.0, 120, 'K', 2]

W
###Weak Antilocalization Effect up to ~ 120 K in the van der Waals Crystal Fe5-xGeTe2 with Near Room Temperature Ferromagnetism|Zhengxian Li,Kui Huang,Deping Guo,Guodong Ma,Xiaolei Liu,Yueshen Wu,Jian Yuan,Zicheng Tao,Binbin Wang,Xia Wang,Zhiqiang Zou,Na Yu,Geliang Yu,Jiamin Xue,Jun Li,Zhongkai Liu,Wei Ji,Yanfeng Guo###
(1725771, 1725771)
 The reflective magneticcircular dichroism measurements indicate a possible spin reorientation thatkills the WAL<missing VAR> effect above 120 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[347.0, 120, 'K', 5],[206.0, 270, 'K', 3],[188.0, 120, 'K', 3],[105.0, 60, 'K', 1],[7.0, 120, 'K', 0]

W
###Weak Antilocalization Effect up to ~ 120 K in the van der Waals Crystal Fe5-xGeTe2 with Near Room Temperature Ferromagnetism|Zhengxian Li,Kui Huang,Deping Guo,Guodong Ma,Xiaolei Liu,Yueshen Wu,Jian Yuan,Zicheng Tao,Binbin Wang,Xia Wang,Zhiqiang Zou,Na Yu,Geliang Yu,Jiamin Xue,Jun Li,Zhongkai Liu,Wei Ji,Yanfeng Guo###
(1725795, 1725795)
 Our findings present a rare example of WAL<missing VAR>effect in two-dimensional ferromagnet and also a magnetotransport fingerprintof the strong SOC in Fe5-xGeTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[371.0, 120, 'K', 6],[230.0, 270, 'K', 4],[212.0, 120, 'K', 4],[129.0, 60, 'K', 2],[17.0, 120, 'K', 1]

SOC
###Weak Antilocalization Effect up to ~ 120 K in the van der Waals Crystal Fe5-xGeTe2 with Near Room Temperature Ferromagnetism|Zhengxian Li,Kui Huang,Deping Guo,Guodong Ma,Xiaolei Liu,Yueshen Wu,Jian Yuan,Zicheng Tao,Binbin Wang,Xia Wang,Zhiqiang Zou,Na Yu,Geliang Yu,Jiamin Xue,Jun Li,Zhongkai Liu,Wei Ji,Yanfeng Guo###
(1725827, 1725829)
 Our findings present a rare example of WAL<missing VAR>effect in two-dimensional ferromagnet and also a magnetotransport fingerprintof the strong SOC in Fe5-xGeTe2.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[403.0, 120, 'K', 6],[262.0, 270, 'K', 4],[244.0, 120, 'K', 4],[161.0, 60, 'K', 2],[49.0, 120, 'K', 1]

Fe5-xGeTe2
###Weak Antilocalization Effect up to ~ 120 K in the van der Waals Crystal Fe5-xGeTe2 with Near Room Temperature Ferromagnetism|Zhengxian Li,Kui Huang,Deping Guo,Guodong Ma,Xiaolei Liu,Yueshen Wu,Jian Yuan,Zicheng Tao,Binbin Wang,Xia Wang,Zhiqiang Zou,Na Yu,Geliang Yu,Jiamin Xue,Jun Li,Zhongkai Liu,Wei Ji,Yanfeng Guo###
(1725833, 1725839)
 Our findings present a rare example of WAL<missing VAR>effect in two-dimensional ferromagnet and also a magnetotransport fingerprintof the strong SOC in Fe5-xGeTe2.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[409.0, 120, 'K', 6],[268.0, 270, 'K', 4],[250.0, 120, 'K', 4],[167.0, 60, 'K', 2],[55.0, 120, 'K', 1]

Tc
###Weak Antilocalization Effect up to ~ 120 K in the van der Waals Crystal Fe5-xGeTe2 with Near Room Temperature Ferromagnetism|Zhengxian Li,Kui Huang,Deping Guo,Guodong Ma,Xiaolei Liu,Yueshen Wu,Jian Yuan,Zicheng Tao,Binbin Wang,Xia Wang,Zhiqiang Zou,Na Yu,Geliang Yu,Jiamin Xue,Jun Li,Zhongkai Liu,Wei Ji,Yanfeng Guo###
(1725869, 1725869)
 The results would be instructive forunderstanding the interaction Hamiltonian for such high Tc itinerantferromagnetism as well as be helpful for the design of next-generation roomtemperature spintronic or twistronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[445.0, 120, 'K', 7],[304.0, 270, 'K', 5],[286.0, 120, 'K', 5],[203.0, 60, 'K', 3],[91.0, 120, 'K', 2]

TiSe2
###Coexistence of resistance oscillations and the anomalous metal phase in a lithium intercalated TiSe$_2$ superconductor|Menghan Liao,Heng Wang,Yuying Zhu,Runan Shang,Mohsin Rafique,Lexian Yang,Hao Zhang,Ding Zhang,Qi-Kun Xue###
(1725946, 1725948)
Coexistence of resistance oscillations and the anomalous metal phase in a lithium intercalated TiSe2 superconductor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Coexistence of resistance oscillations and the anomalous metal phase in a lithium intercalated TiSe$_2$ superconductor|Menghan Liao,Heng Wang,Yuying Zhu,Runan Shang,Mohsin Rafique,Lexian Yang,Hao Zhang,Ding Zhang,Qi-Kun Xue###
(1725964, 1725964)
 Superconductivity and charge density wave (CD<missing VAR>W) appear in the phase diagramof a variety of materials including the high - Tc cuprate family and manytransition metal dichalcogenides (TMDs).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Coexistence of resistance oscillations and the anomalous metal phase in a lithium intercalated TiSe$_2$ superconductor|Menghan Liao,Heng Wang,Yuying Zhu,Runan Shang,Mohsin Rafique,Lexian Yang,Hao Zhang,Ding Zhang,Qi-Kun Xue###
(1725966, 1725966)
 Superconductivity and charge density wave (CD<missing VAR>W) appear in the phase diagramof a variety of materials including the high - Tc cuprate family and manytransition metal dichalcogenides (TMDs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ds
###Coexistence of resistance oscillations and the anomalous metal phase in a lithium intercalated TiSe$_2$ superconductor|Menghan Liao,Heng Wang,Yuying Zhu,Runan Shang,Mohsin Rafique,Lexian Yang,Hao Zhang,Ding Zhang,Qi-Kun Xue###
(1726019, 1726019)
 Superconductivity and charge density wave (CD<missing VAR>W) appear in the phase diagramof a variety of materials including the high - Tc cuprate family and manytransition metal dichalcogenides (TMDs).
EXCEPTION 3: IndexError for Ds
TiSe2
Abstract does not contain any numbers.

Nd0.8Sr0.2NiO2
###Superconductivity in a quintuple-layer square-planar nickelate|Grace A. Pan,Dan Ferenc Segedin,Harrison LaBollita,Qi Song,Emilian M. Nica,Berit H. Goodge,Andrew T. Pierce,Spencer Doyle,Steve Novakov,Denisse Córdova Carrizales,Alpha T. N'Diaye,Padraic Shafer,Hanjong Paik,John T. Heron,Jarad A. Mason,Amir Yacoby,Lena F. Kourkoutis,Onur Erten,Charles M. Brooks,Antia S. Botana,Julia A. Mundy###
(1726455, 1726461)
 One primematerials platform has been the rare-earth nickelates and indeedsuperconductivity was recently discovered in the doped compoundNd0.8Sr0.2NiO2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.05,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NdNiO2
###Superconductivity in a quintuple-layer square-planar nickelate|Grace A. Pan,Dan Ferenc Segedin,Harrison LaBollita,Qi Song,Emilian M. Nica,Berit H. Goodge,Andrew T. Pierce,Spencer Doyle,Steve Novakov,Denisse Córdova Carrizales,Alpha T. N'Diaye,Padraic Shafer,Hanjong Paik,John T. Heron,Jarad A. Mason,Amir Yacoby,Lena F. Kourkoutis,Onur Erten,Charles M. Brooks,Antia S. Botana,Julia A. Mundy###
(1726466, 1726469)
 Undoped NdNiO2 belongs to a series of layeredsquare-planar nickelates with chemical formula Ndn<missing VAR>1Nin<missing VAR>O2n<missing VAR>2 andis known as the infinite-layer (n<missing VAR>  infty) nickelate.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nd
###Superconductivity in a quintuple-layer square-planar nickelate|Grace A. Pan,Dan Ferenc Segedin,Harrison LaBollita,Qi Song,Emilian M. Nica,Berit H. Goodge,Andrew T. Pierce,Spencer Doyle,Steve Novakov,Denisse Córdova Carrizales,Alpha T. N'Diaye,Padraic Shafer,Hanjong Paik,John T. Heron,Jarad A. Mason,Amir Yacoby,Lena F. Kourkoutis,Onur Erten,Charles M. Brooks,Antia S. Botana,Julia A. Mundy###
(1726496, 1726496)
 Undoped NdNiO2 belongs to a series of layeredsquare-planar nickelates with chemical formula Ndn<missing VAR>1Nin<missing VAR>O2n<missing VAR>2 andis known as the infinite-layer (n<missing VAR>  infty) nickelate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Superconductivity in a quintuple-layer square-planar nickelate|Grace A. Pan,Dan Ferenc Segedin,Harrison LaBollita,Qi Song,Emilian M. Nica,Berit H. Goodge,Andrew T. Pierce,Spencer Doyle,Steve Novakov,Denisse Córdova Carrizales,Alpha T. N'Diaye,Padraic Shafer,Hanjong Paik,John T. Heron,Jarad A. Mason,Amir Yacoby,Lena F. Kourkoutis,Onur Erten,Charles M. Brooks,Antia S. Botana,Julia A. Mundy###
(1726499, 1726499)
 Undoped NdNiO2 belongs to a series of layeredsquare-planar nickelates with chemical formula Ndn<missing VAR>1Nin<missing VAR>O2n<missing VAR>2 andis known as the infinite-layer (n<missing VAR>  infty) nickelate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O2
###Superconductivity in a quintuple-layer square-planar nickelate|Grace A. Pan,Dan Ferenc Segedin,Harrison LaBollita,Qi Song,Emilian M. Nica,Berit H. Goodge,Andrew T. Pierce,Spencer Doyle,Steve Novakov,Denisse Córdova Carrizales,Alpha T. N'Diaye,Padraic Shafer,Hanjong Paik,John T. Heron,Jarad A. Mason,Amir Yacoby,Lena F. Kourkoutis,Onur Erten,Charles M. Brooks,Antia S. Botana,Julia A. Mundy###
(1726501, 1726502)
 Undoped NdNiO2 belongs to a series of layeredsquare-planar nickelates with chemical formula Ndn<missing VAR>1Nin<missing VAR>O2n<missing VAR>2 andis known as the infinite-layer (n<missing VAR>  infty) nickelate.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nd6Ni5O12
###Superconductivity in a quintuple-layer square-planar nickelate|Grace A. Pan,Dan Ferenc Segedin,Harrison LaBollita,Qi Song,Emilian M. Nica,Berit H. Goodge,Andrew T. Pierce,Spencer Doyle,Steve Novakov,Denisse Córdova Carrizales,Alpha T. N'Diaye,Padraic Shafer,Hanjong Paik,John T. Heron,Jarad A. Mason,Amir Yacoby,Lena F. Kourkoutis,Onur Erten,Charles M. Brooks,Antia S. Botana,Julia A. Mundy###
(1726568, 1726573)
 Here, we report thesynthesis of the quintuple-layer (n<missing VAR>  5) member of this series,Nd6Ni5O12, in which optimal cuprate-like electron filling(d<missing VAR>8.8) is achieved without chemical doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5217391304347826,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.21739130434782608,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2608695652173913,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Superconductivity in a quintuple-layer square-planar nickelate|Grace A. Pan,Dan Ferenc Segedin,Harrison LaBollita,Qi Song,Emilian M. Nica,Berit H. Goodge,Andrew T. Pierce,Spencer Doyle,Steve Novakov,Denisse Córdova Carrizales,Alpha T. N'Diaye,Padraic Shafer,Hanjong Paik,John T. Heron,Jarad A. Mason,Amir Yacoby,Lena F. Kourkoutis,Onur Erten,Charles M. Brooks,Antia S. Botana,Julia A. Mundy###
(1726625, 1726625)
 We observe a superconductingtransition beginning at sim13 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nd6Ni5O12
###Superconductivity in a quintuple-layer square-planar nickelate|Grace A. Pan,Dan Ferenc Segedin,Harrison LaBollita,Qi Song,Emilian M. Nica,Berit H. Goodge,Andrew T. Pierce,Spencer Doyle,Steve Novakov,Denisse Córdova Carrizales,Alpha T. N'Diaye,Padraic Shafer,Hanjong Paik,John T. Heron,Jarad A. Mason,Amir Yacoby,Lena F. Kourkoutis,Onur Erten,Charles M. Brooks,Antia S. Botana,Julia A. Mundy###
(1726656, 1726661)
 Electronic structure calculations, intandem with magnetoresistive and spectroscopic measurements, suggest thatNd6Ni5O12 interpolates between cuprate-like and infinite-layernickelate-like behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5217391304347826,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.21739130434782608,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2608695652173913,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Superconductivity in a quintuple-layer square-planar nickelate|Grace A. Pan,Dan Ferenc Segedin,Harrison LaBollita,Qi Song,Emilian M. Nica,Berit H. Goodge,Andrew T. Pierce,Spencer Doyle,Steve Novakov,Denisse Córdova Carrizales,Alpha T. N'Diaye,Padraic Shafer,Hanjong Paik,John T. Heron,Jarad A. Mason,Amir Yacoby,Lena F. Kourkoutis,Onur Erten,Charles M. Brooks,Antia S. Botana,Julia A. Mundy###
(1726685, 1726685)
 In engineering a distinct superconducting nickelate,we identify the square-planar nickelates as a new family of superconductorswhich can be tuned via both doping and dimensionality.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Electronic phase separation: recent progress in the old problem|M. Yu. Kagan,K. I. Kugel,A. L. Rakhmanov###
(1727046, 1727046)
 The present reviewarticle deals with the advances in the subject of electronic phase separationand formation of different types of nanoscale ferromagnetic (FM) metallicdroplets (FM<missing VAR> polarons or ferrons) in antiferromagnetically ordered (AFM),charge-ordered (CO), or orbitally-ordered (OO) insulating matrices, as well asthe colossal magnetoresistance (CMR) effect and tunneling electron transport inthe nonmetallic phase-separated state of complex magnetic oxides.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Electronic phase separation: recent progress in the old problem|M. Yu. Kagan,K. I. Kugel,A. L. Rakhmanov###
(1727056, 1727056)
 The present reviewarticle deals with the advances in the subject of electronic phase separationand formation of different types of nanoscale ferromagnetic (FM) metallicdroplets (FM<missing VAR> polarons or ferrons) in antiferromagnetically ordered (AFM),charge-ordered (CO), or orbitally-ordered (OO) insulating matrices, as well asthe colossal magnetoresistance (CMR) effect and tunneling electron transport inthe nonmetallic phase-separated state of complex magnetic oxides.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Electronic phase separation: recent progress in the old problem|M. Yu. Kagan,K. I. Kugel,A. L. Rakhmanov###
(1727074, 1727074)
 The present reviewarticle deals with the advances in the subject of electronic phase separationand formation of different types of nanoscale ferromagnetic (FM) metallicdroplets (FM<missing VAR> polarons or ferrons) in antiferromagnetically ordered (AFM),charge-ordered (CO), or orbitally-ordered (OO) insulating matrices, as well asthe colossal magnetoresistance (CMR) effect and tunneling electron transport inthe nonmetallic phase-separated state of complex magnetic oxides.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(CO)
###Electronic phase separation: recent progress in the old problem|M. Yu. Kagan,K. I. Kugel,A. L. Rakhmanov###
(1727084, 1727087)
 The present reviewarticle deals with the advances in the subject of electronic phase separationand formation of different types of nanoscale ferromagnetic (FM) metallicdroplets (FM<missing VAR> polarons or ferrons) in antiferromagnetically ordered (AFM),charge-ordered (CO), or orbitally-ordered (OO) insulating matrices, as well asthe colossal magnetoresistance (CMR) effect and tunneling electron transport inthe nonmetallic phase-separated state of complex magnetic oxides.
Featurization successful!
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(OO)
###Electronic phase separation: recent progress in the old problem|M. Yu. Kagan,K. I. Kugel,A. L. Rakhmanov###
(1727096, 1727099)
 The present reviewarticle deals with the advances in the subject of electronic phase separationand formation of different types of nanoscale ferromagnetic (FM) metallicdroplets (FM<missing VAR> polarons or ferrons) in antiferromagnetically ordered (AFM),charge-ordered (CO), or orbitally-ordered (OO) insulating matrices, as well asthe colossal magnetoresistance (CMR) effect and tunneling electron transport inthe nonmetallic phase-separated state of complex magnetic oxides.
Featurization successful!
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Electronic phase separation: recent progress in the old problem|M. Yu. Kagan,K. I. Kugel,A. L. Rakhmanov###
(1727120, 1727120)
 The present reviewarticle deals with the advances in the subject of electronic phase separationand formation of different types of nanoscale ferromagnetic (FM) metallicdroplets (FM<missing VAR> polarons or ferrons) in antiferromagnetically ordered (AFM),charge-ordered (CO), or orbitally-ordered (OO) insulating matrices, as well asthe colossal magnetoresistance (CMR) effect and tunneling electron transport inthe nonmetallic phase-separated state of complex magnetic oxides.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TaAs
###Nanoscale devices with superconducting electrodes to locally channel current in 3D Weyl semimetals|Biswajit Datta,Jaykumar Vaidya,Subhamoy Ghatak,Raghav Dhingra,Rajib Mondal,John Jesudasan,A. Thamizhavel,Mandar M. Deshmukh###
(1727352, 1727353)
 We report on the fabrication of nano-devices on the hkl[-1 0 1] surface of aWeyl semimetal, a macroscopic crystal of TaAs, and low-temperature transportmeasurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 3, 'D', 1],[351.0, 3, 'D', 7]

(NbN)
###Nanoscale devices with superconducting electrodes to locally channel current in 3D Weyl semimetals|Biswajit Datta,Jaykumar Vaidya,Subhamoy Ghatak,Raghav Dhingra,Rajib Mondal,John Jesudasan,A. Thamizhavel,Mandar M. Deshmukh###
(1727427, 1727430)
 Wefabricate the device electrodes with superconducting Niobium nitride (NbN) tocontrol the current flow through the intended active area of the devices.
Featurization successful!
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 3, 'D', 3],[274.0, 3, 'D', 5]

As
###Nanoscale devices with superconducting electrodes to locally channel current in 3D Weyl semimetals|Biswajit Datta,Jaykumar Vaidya,Subhamoy Ghatak,Raghav Dhingra,Rajib Mondal,John Jesudasan,A. Thamizhavel,Mandar M. Deshmukh###
(1727652, 1727652)
 As we useconventional lithographic techniques for patterning, this method can beextended to a wide gamut of electrode materials and a large class of 3D quantummaterials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[357.0, 3, 'D', 8],[52.0, 3, 'D', 0]

Ni81Fe19
###Stacking-order effect on spin-orbit torque, spin-Hall magnetoresistance, and magnetic anisotropy in Ni$_{81}$Fe$_{19}$-IrO$_2$ bilayers|Kohei Ueda,Naoki Moriuchi,Kenta Fukushima,Takanori Kida,Masayuki Hagiwara,Jobu Matsuno###
(1727750, 1727753)
Stacking-order effect on spin-orbit torque, spin-Hall magnetoresistance, and magnetic anisotropy in Ni81Fe19-IrO2 bilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.19,0,0.81,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 5, 'd', 1],[439.0, 5, 'd', 6]

IrO2
###Stacking-order effect on spin-orbit torque, spin-Hall magnetoresistance, and magnetic anisotropy in Ni$_{81}$Fe$_{19}$-IrO$_2$ bilayers|Kohei Ueda,Naoki Moriuchi,Kenta Fukushima,Takanori Kida,Masayuki Hagiwara,Jobu Matsuno###
(1727755, 1727757)
Stacking-order effect on spin-orbit torque, spin-Hall magnetoresistance, and magnetic anisotropy in Ni81Fe19-IrO2 bilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 5, 'd', 1],[435.0, 5, 'd', 6]

SO
###Stacking-order effect on spin-orbit torque, spin-Hall magnetoresistance, and magnetic anisotropy in Ni$_{81}$Fe$_{19}$-IrO$_2$ bilayers|Kohei Ueda,Naoki Moriuchi,Kenta Fukushima,Takanori Kida,Masayuki Hagiwara,Jobu Matsuno###
(1727849, 1727850)
 Here, we reporton stacking-order effect of spin-orbit torque (SOT), spin-Hallmagnetoresistance, and magnetic anisotropy in bilayer Ni81Fe19-5d<missing VAR>iridium oxide, IrO2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 5, 'd', 1],[342.0, 5, 'd', 4]

Ni81Fe19
###Stacking-order effect on spin-orbit torque, spin-Hall magnetoresistance, and magnetic anisotropy in Ni$_{81}$Fe$_{19}$-IrO$_2$ bilayers|Kohei Ueda,Naoki Moriuchi,Kenta Fukushima,Takanori Kida,Masayuki Hagiwara,Jobu Matsuno###
(1727873, 1727876)
 Here, we reporton stacking-order effect of spin-orbit torque (SOT), spin-Hallmagnetoresistance, and magnetic anisotropy in bilayer Ni81Fe19-5d<missing VAR>iridium oxide, IrO2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.19,0,0.81,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 5, 'd', 1],[316.0, 5, 'd', 4]

IrO2
###Stacking-order effect on spin-orbit torque, spin-Hall magnetoresistance, and magnetic anisotropy in Ni$_{81}$Fe$_{19}$-IrO$_2$ bilayers|Kohei Ueda,Naoki Moriuchi,Kenta Fukushima,Takanori Kida,Masayuki Hagiwara,Jobu Matsuno###
(1727887, 1727889)
 Here, we reporton stacking-order effect of spin-orbit torque (SOT), spin-Hallmagnetoresistance, and magnetic anisotropy in bilayer Ni81Fe19-5d<missing VAR>iridium oxide, IrO2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 5, 'd', 1],[303.0, 5, 'd', 4]

IrO2
###Stacking-order effect on spin-orbit torque, spin-Hall magnetoresistance, and magnetic anisotropy in Ni$_{81}$Fe$_{19}$-IrO$_2$ bilayers|Kohei Ueda,Naoki Moriuchi,Kenta Fukushima,Takanori Kida,Masayuki Hagiwara,Jobu Matsuno###
(1727898, 1727900)
 While all the IrO2 and Pt control samples exhibitlarge dampinglike-SOT<missing VAR> generation stemming from the efficient charge to spincurrent conversion, the magnitude of the SOT<missing VAR> is larger in the IrO2(Pt)-bottom sample than in the IrO2 (Pt)-top one.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 5, 'd', 2],[292.0, 5, 'd', 3]

Pt
###Stacking-order effect on spin-orbit torque, spin-Hall magnetoresistance, and magnetic anisotropy in Ni$_{81}$Fe$_{19}$-IrO$_2$ bilayers|Kohei Ueda,Naoki Moriuchi,Kenta Fukushima,Takanori Kida,Masayuki Hagiwara,Jobu Matsuno###
(1727904, 1727904)
 While all the IrO2 and Pt control samples exhibitlarge dampinglike-SOT<missing VAR> generation stemming from the efficient charge to spincurrent conversion, the magnitude of the SOT<missing VAR> is larger in the IrO2(Pt)-bottom sample than in the IrO2 (Pt)-top one.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 5, 'd', 2],[288.0, 5, 'd', 3]

SO
###Stacking-order effect on spin-orbit torque, spin-Hall magnetoresistance, and magnetic anisotropy in Ni$_{81}$Fe$_{19}$-IrO$_2$ bilayers|Kohei Ueda,Naoki Moriuchi,Kenta Fukushima,Takanori Kida,Masayuki Hagiwara,Jobu Matsuno###
(1727917, 1727918)
 While all the IrO2 and Pt control samples exhibitlarge dampinglike-SOT<missing VAR> generation stemming from the efficient charge to spincurrent conversion, the magnitude of the SOT<missing VAR> is larger in the IrO2(Pt)-bottom sample than in the IrO2 (Pt)-top one.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 5, 'd', 2],[274.0, 5, 'd', 3]

SO
###Stacking-order effect on spin-orbit torque, spin-Hall magnetoresistance, and magnetic anisotropy in Ni$_{81}$Fe$_{19}$-IrO$_2$ bilayers|Kohei Ueda,Naoki Moriuchi,Kenta Fukushima,Takanori Kida,Masayuki Hagiwara,Jobu Matsuno###
(1727951, 1727952)
 While all the IrO2 and Pt control samples exhibitlarge dampinglike-SOT<missing VAR> generation stemming from the efficient charge to spincurrent conversion, the magnitude of the SOT<missing VAR> is larger in the IrO2(Pt)-bottom sample than in the IrO2 (Pt)-top one.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 5, 'd', 2],[240.0, 5, 'd', 3]

IrO2
###Stacking-order effect on spin-orbit torque, spin-Hall magnetoresistance, and magnetic anisotropy in Ni$_{81}$Fe$_{19}$-IrO$_2$ bilayers|Kohei Ueda,Naoki Moriuchi,Kenta Fukushima,Takanori Kida,Masayuki Hagiwara,Jobu Matsuno###
(1727963, 1727965)
 While all the IrO2 and Pt control samples exhibitlarge dampinglike-SOT<missing VAR> generation stemming from the efficient charge to spincurrent conversion, the magnitude of the SOT<missing VAR> is larger in the IrO2(Pt)-bottom sample than in the IrO2 (Pt)-top one.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[200.0, 5, 'd', 2],[227.0, 5, 'd', 3]

(Pt)
###Stacking-order effect on spin-orbit torque, spin-Hall magnetoresistance, and magnetic anisotropy in Ni$_{81}$Fe$_{19}$-IrO$_2$ bilayers|Kohei Ueda,Naoki Moriuchi,Kenta Fukushima,Takanori Kida,Masayuki Hagiwara,Jobu Matsuno###
(1727968, 1727970)
 While all the IrO2 and Pt control samples exhibitlarge dampinglike-SOT<missing VAR> generation stemming from the efficient charge to spincurrent conversion, the magnitude of the SOT<missing VAR> is larger in the IrO2(Pt)-bottom sample than in the IrO2 (Pt)-top one.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, 5, 'd', 2],[222.0, 5, 'd', 3]

IrO2
###Stacking-order effect on spin-orbit torque, spin-Hall magnetoresistance, and magnetic anisotropy in Ni$_{81}$Fe$_{19}$-IrO$_2$ bilayers|Kohei Ueda,Naoki Moriuchi,Kenta Fukushima,Takanori Kida,Masayuki Hagiwara,Jobu Matsuno###
(1727982, 1727984)
 While all the IrO2 and Pt control samples exhibitlarge dampinglike-SOT<missing VAR> generation stemming from the efficient charge to spincurrent conversion, the magnitude of the SOT<missing VAR> is larger in the IrO2(Pt)-bottom sample than in the IrO2 (Pt)-top one.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[219.0, 5, 'd', 2],[208.0, 5, 'd', 3]

(Pt)
###Stacking-order effect on spin-orbit torque, spin-Hall magnetoresistance, and magnetic anisotropy in Ni$_{81}$Fe$_{19}$-IrO$_2$ bilayers|Kohei Ueda,Naoki Moriuchi,Kenta Fukushima,Takanori Kida,Masayuki Hagiwara,Jobu Matsuno###
(1727986, 1727988)
 While all the IrO2 and Pt control samples exhibitlarge dampinglike-SOT<missing VAR> generation stemming from the efficient charge to spincurrent conversion, the magnitude of the SOT<missing VAR> is larger in the IrO2(Pt)-bottom sample than in the IrO2 (Pt)-top one.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[223.0, 5, 'd', 2],[204.0, 5, 'd', 3]

SO
###Stacking-order effect on spin-orbit torque, spin-Hall magnetoresistance, and magnetic anisotropy in Ni$_{81}$Fe$_{19}$-IrO$_2$ bilayers|Kohei Ueda,Naoki Moriuchi,Kenta Fukushima,Takanori Kida,Masayuki Hagiwara,Jobu Matsuno###
(1727999, 1728000)
 The fieldlike-SOT<missing VAR> has evenmore significant stack order effect, resulting in an opposite sign in theIrO2 samples in contrast to the same sign in the Pt samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[236.0, 5, 'd', 3],[192.0, 5, 'd', 2]

IrO2
###Stacking-order effect on spin-orbit torque, spin-Hall magnetoresistance, and magnetic anisotropy in Ni$_{81}$Fe$_{19}$-IrO$_2$ bilayers|Kohei Ueda,Naoki Moriuchi,Kenta Fukushima,Takanori Kida,Masayuki Hagiwara,Jobu Matsuno###
(1728034, 1728036)
 The fieldlike-SOT<missing VAR> has evenmore significant stack order effect, resulting in an opposite sign in theIrO2 samples in contrast to the same sign in the Pt samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[271.0, 5, 'd', 3],[156.0, 5, 'd', 2]

Pt
###Stacking-order effect on spin-orbit torque, spin-Hall magnetoresistance, and magnetic anisotropy in Ni$_{81}$Fe$_{19}$-IrO$_2$ bilayers|Kohei Ueda,Naoki Moriuchi,Kenta Fukushima,Takanori Kida,Masayuki Hagiwara,Jobu Matsuno###
(1728056, 1728056)
 The fieldlike-SOT<missing VAR> has evenmore significant stack order effect, resulting in an opposite sign in theIrO2 samples in contrast to the same sign in the Pt samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[293.0, 5, 'd', 3],[136.0, 5, 'd', 2]

IrO2
###Stacking-order effect on spin-orbit torque, spin-Hall magnetoresistance, and magnetic anisotropy in Ni$_{81}$Fe$_{19}$-IrO$_2$ bilayers|Kohei Ueda,Naoki Moriuchi,Kenta Fukushima,Takanori Kida,Masayuki Hagiwara,Jobu Matsuno###
(1728100, 1728102)
 Furthermore, weobserve that the magnetic anisotropy energy density and the anomalous Halleffect are increased in the IrO2 (Pt)-bottom sample, suggesting enhancedinterfacial perpendicular magnetic anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[337.0, 5, 'd', 4],[90.0, 5, 'd', 1]

(Pt)
###Stacking-order effect on spin-orbit torque, spin-Hall magnetoresistance, and magnetic anisotropy in Ni$_{81}$Fe$_{19}$-IrO$_2$ bilayers|Kohei Ueda,Naoki Moriuchi,Kenta Fukushima,Takanori Kida,Masayuki Hagiwara,Jobu Matsuno###
(1728104, 1728106)
 Furthermore, weobserve that the magnetic anisotropy energy density and the anomalous Halleffect are increased in the IrO2 (Pt)-bottom sample, suggesting enhancedinterfacial perpendicular magnetic anisotropy.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[341.0, 5, 'd', 4],[86.0, 5, 'd', 1]

Ir
###Stacking-order effect on spin-orbit torque, spin-Hall magnetoresistance, and magnetic anisotropy in Ni$_{81}$Fe$_{19}$-IrO$_2$ bilayers|Kohei Ueda,Naoki Moriuchi,Kenta Fukushima,Takanori Kida,Masayuki Hagiwara,Jobu Matsuno###
(1728163, 1728163)
 Our findings highlight thesignificant influence of the stack order on spin transport and magnetotransportproperties of Ir oxide/ferromagnet systems, providing useful information ondesign of SOT<missing VAR> devices including 5d transition-metal oxides.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[400.0, 5, 'd', 5],[29.0, 5, 'd', 0]

SO
###Stacking-order effect on spin-orbit torque, spin-Hall magnetoresistance, and magnetic anisotropy in Ni$_{81}$Fe$_{19}$-IrO$_2$ bilayers|Kohei Ueda,Naoki Moriuchi,Kenta Fukushima,Takanori Kida,Masayuki Hagiwara,Jobu Matsuno###
(1728185, 1728186)
 Our findings highlight thesignificant influence of the stack order on spin transport and magnetotransportproperties of Ir oxide/ferromagnet systems, providing useful information ondesign of SOT<missing VAR> devices including 5d transition-metal oxides.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[422.0, 5, 'd', 5],[6.0, 5, 'd', 0]

In
###Proposal of Analog In-Memory Computing with Magnified Tunnel Magnetoresistance Ratio and Universal STT-MRAM Cell|Hao Cai,Yanan Guo,Bo Liu,Mingyang Zhou,Juntong Chen,Xinning Liu,Jun Yang###
(1728215, 1728215)
Proposal of Analog In-Memory Computing with Magnified Tunnel Magnetoresistance Ratio and Universal STT-MRAM<missing VAR> Cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[506.0, 57.6, '%', 10]

S
###Proposal of Analog In-Memory Computing with Magnified Tunnel Magnetoresistance Ratio and Universal STT-MRAM Cell|Hao Cai,Yanan Guo,Bo Liu,Mingyang Zhou,Juntong Chen,Xinning Liu,Jun Yang###
(1728235, 1728235)
Proposal of Analog In-Memory Computing with Magnified Tunnel Magnetoresistance Ratio and Universal STT-MRAM<missing VAR> Cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[486.0, 57.6, '%', 10]

In
###Proposal of Analog In-Memory Computing with Magnified Tunnel Magnetoresistance Ratio and Universal STT-MRAM Cell|Hao Cai,Yanan Guo,Bo Liu,Mingyang Zhou,Juntong Chen,Xinning Liu,Jun Yang###
(1728247, 1728247)
 In-memory computing (IM<missing VAR>C) is an effectual solution for energy-efficientartificial intelligence applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[474.0, 57.6, '%', 9]

I
###Proposal of Analog In-Memory Computing with Magnified Tunnel Magnetoresistance Ratio and Universal STT-MRAM Cell|Hao Cai,Yanan Guo,Bo Liu,Mingyang Zhou,Juntong Chen,Xinning Liu,Jun Yang###
(1728254, 1728254)
 In-memory computing (IM<missing VAR>C) is an effectual solution for energy-efficientartificial intelligence applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[467.0, 57.6, '%', 9]

C
###Proposal of Analog In-Memory Computing with Magnified Tunnel Magnetoresistance Ratio and Universal STT-MRAM Cell|Hao Cai,Yanan Guo,Bo Liu,Mingyang Zhou,Juntong Chen,Xinning Liu,Jun Yang###
(1728256, 1728256)
 In-memory computing (IM<missing VAR>C) is an effectual solution for energy-efficientartificial intelligence applications.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[465.0, 57.6, '%', 9]

I
###Proposal of Analog In-Memory Computing with Magnified Tunnel Magnetoresistance Ratio and Universal STT-MRAM Cell|Hao Cai,Yanan Guo,Bo Liu,Mingyang Zhou,Juntong Chen,Xinning Liu,Jun Yang###
(1728283, 1728283)
 Analog IM<missing VAR>C amortizes the powerconsumption of multiple sensing amplifiers with analog-to-digital converter(AD<missing VAR>C), and simultaneously completes the calculation of multi-line data withhigh parallelism degree.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[438.0, 57.6, '%', 8]

C
###Proposal of Analog In-Memory Computing with Magnified Tunnel Magnetoresistance Ratio and Universal STT-MRAM Cell|Hao Cai,Yanan Guo,Bo Liu,Mingyang Zhou,Juntong Chen,Xinning Liu,Jun Yang###
(1728285, 1728285)
 Analog IM<missing VAR>C amortizes the powerconsumption of multiple sensing amplifiers with analog-to-digital converter(AD<missing VAR>C), and simultaneously completes the calculation of multi-line data withhigh parallelism degree.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[436.0, 57.6, '%', 8]

C
###Proposal of Analog In-Memory Computing with Magnified Tunnel Magnetoresistance Ratio and Universal STT-MRAM Cell|Hao Cai,Yanan Guo,Bo Liu,Mingyang Zhou,Juntong Chen,Xinning Liu,Jun Yang###
(1728318, 1728318)
 Analog IM<missing VAR>C amortizes the powerconsumption of multiple sensing amplifiers with analog-to-digital converter(AD<missing VAR>C), and simultaneously completes the calculation of multi-line data withhigh parallelism degree.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[403.0, 57.6, '%', 8]

S
###Proposal of Analog In-Memory Computing with Magnified Tunnel Magnetoresistance Ratio and Universal STT-MRAM Cell|Hao Cai,Yanan Guo,Bo Liu,Mingyang Zhou,Juntong Chen,Xinning Liu,Jun Yang###
(1728390, 1728390)
 Based on a universal one-transistor one-magnetictunnel junction (MTJ) spin transfer torque magnetic RAM (STT-MRAM) cell, thispaper demonstrates a novel tunneling magnetoresistance (TMR) ratio magnifyingmethod to realize analog IM<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[331.0, 57.6, '%', 7]

I
###Proposal of Analog In-Memory Computing with Magnified Tunnel Magnetoresistance Ratio and Universal STT-MRAM Cell|Hao Cai,Yanan Guo,Bo Liu,Mingyang Zhou,Juntong Chen,Xinning Liu,Jun Yang###
(1728437, 1728437)
 Based on a universal one-transistor one-magnetictunnel junction (MTJ) spin transfer torque magnetic RAM (STT-MRAM) cell, thispaper demonstrates a novel tunneling magnetoresistance (TMR) ratio magnifyingmethod to realize analog IM<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[284.0, 57.6, '%', 7]

C
###Proposal of Analog In-Memory Computing with Magnified Tunnel Magnetoresistance Ratio and Universal STT-MRAM Cell|Hao Cai,Yanan Guo,Bo Liu,Mingyang Zhou,Juntong Chen,Xinning Liu,Jun Yang###
(1728439, 1728439)
 Based on a universal one-transistor one-magnetictunnel junction (MTJ) spin transfer torque magnetic RAM (STT-MRAM) cell, thispaper demonstrates a novel tunneling magnetoresistance (TMR) ratio magnifyingmethod to realize analog IM<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[282.0, 57.6, '%', 7]

C
###Proposal of Analog In-Memory Computing with Magnified Tunnel Magnetoresistance Ratio and Universal STT-MRAM Cell|Hao Cai,Yanan Guo,Bo Liu,Mingyang Zhou,Juntong Chen,Xinning Liu,Jun Yang###
(1728576, 1728576)
 The proposeddesign maximumly supports 1024 2-bit input and 1-bit weightmultiply-and-accumulate (M<missing VAR>AC) computations simultaneously.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 57.6, '%', 3]

(IN)
###Proposal of Analog In-Memory Computing with Magnified Tunnel Magnetoresistance Ratio and Universal STT-MRAM Cell|Hao Cai,Yanan Guo,Bo Liu,Mingyang Zhou,Juntong Chen,Xinning Liu,Jun Yang###
(1728609, 1728612)
 The 2-bit input isrepresented by the width of the input (IN) pulses, while the 1-bit weight isstored in STT-MRAM<missing VAR> and the x<missing VAR>7500 magnified TMR (m-TMR) ratio is obtained bylatching.
Featurization successful!
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 57.6, '%', 2]

S
###Proposal of Analog In-Memory Computing with Magnified Tunnel Magnetoresistance Ratio and Universal STT-MRAM Cell|Hao Cai,Yanan Guo,Bo Liu,Mingyang Zhou,Juntong Chen,Xinning Liu,Jun Yang###
(1728634, 1728634)
 The 2-bit input isrepresented by the width of the input (IN) pulses, while the 1-bit weight isstored in STT-MRAM<missing VAR> and the x<missing VAR>7500 magnified TMR (m-TMR) ratio is obtained bylatching.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 57.6, '%', 2]

C
###Proposal of Analog In-Memory Computing with Magnified Tunnel Magnetoresistance Ratio and Universal STT-MRAM Cell|Hao Cai,Yanan Guo,Bo Liu,Mingyang Zhou,Juntong Chen,Xinning Liu,Jun Yang###
(1728690, 1728690)
 The proposal is simulated using 28-nm CM<missing VAR>OS process and MTJ compactmodel.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 57.6, '%', 1]

OS
###Proposal of Analog In-Memory Computing with Magnified Tunnel Magnetoresistance Ratio and Universal STT-MRAM Cell|Hao Cai,Yanan Guo,Bo Liu,Mingyang Zhou,Juntong Chen,Xinning Liu,Jun Yang###
(1728692, 1728693)
 The proposal is simulated using 28-nm CM<missing VAR>OS process and MTJ compactmodel.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 57.6, '%', 1]

OPS/W
###Proposal of Analog In-Memory Computing with Magnified Tunnel Magnetoresistance Ratio and Universal STT-MRAM Cell|Hao Cai,Yanan Guo,Bo Liu,Mingyang Zhou,Juntong Chen,Xinning Liu,Jun Yang###
(1728741, 1728745)
 9.47-25.4 T<missing VAR>OPS/W is realized with 2-bit input, 1-bitweight and 4-bit output convolution neural network (CNN).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[20.0, 57.6, '%', 1]

(CNN)
###Proposal of Analog In-Memory Computing with Magnified Tunnel Magnetoresistance Ratio and Universal STT-MRAM Cell|Hao Cai,Yanan Guo,Bo Liu,Mingyang Zhou,Juntong Chen,Xinning Liu,Jun Yang###
(1728781, 1728785)
 9.47-25.4 T<missing VAR>OPS/W is realized with 2-bit input, 1-bitweight and 4-bit output convolution neural network (CNN).
Featurization successful!
0,0,0,0,0,0.3333333333333333,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 57.6, '%', 1]

As
###Topological phonons in an inhomogeneously strained silicon-1: Evidence of long-distance spin transport and unidirectional magnetoresistance of phonons|Anand Katailiha,Ravindra G. Bhardwaj,Paul C. Lou,Ward P. Beyermann,Sandeep Kumar###
(1728982, 1728982)
 Asa consequence, topological phonon mediated spin and heat transport can beengineered in the semiconductor thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Topological phonons in an inhomogeneously strained silicon-1: Evidence of long-distance spin transport and unidirectional magnetoresistance of phonons|Anand Katailiha,Ravindra G. Bhardwaj,Paul C. Lou,Ward P. Beyermann,Sandeep Kumar###
(1729056, 1729056)
 Here, we present evidence of along-distance (100 um) spin transport in the freestanding Si thin film sampleunder an applied strain gradient using transverse spin-Nernst effectmeasurement.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BiTeBr
###Topological phonons in an inhomogeneously strained silicon-1: Evidence of long-distance spin transport and unidirectional magnetoresistance of phonons|Anand Katailiha,Ravindra G. Bhardwaj,Paul C. Lou,Ward P. Beyermann,Sandeep Kumar###
(1729194, 1729196)
 The inhomogeneousmedium was validated using unidirectional magnetoresistance of phonons wherethe magnitude of the coefficient of the non-reciprocal response at roomtemperature was as large as reported in the BiTeBr at low temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Topological phonons in an inhomogeneously strained silicon-5: Inhomogeneous magnetoelectronic effect in a conductor|Paul C. Lou,Ravindra G. Bhardwaj,Anand Katailiha,Ward Beyermann,Sandeep Kumar###
(1729414, 1729414)
 In this study, we present experimental evidence of inhomogeneousmagnetoelectronic effect in Py/p<missing VAR>-Si layered structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Topological phonons in an inhomogeneously strained silicon-5: Inhomogeneous magnetoelectronic effect in a conductor|Paul C. Lou,Ravindra G. Bhardwaj,Anand Katailiha,Ward Beyermann,Sandeep Kumar###
(1729444, 1729444)
 In this study, we present experimental evidence of inhomogeneousmagnetoelectronic effect in Py/p<missing VAR>-Si layered structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Topological phonons in an inhomogeneously strained silicon-5: Inhomogeneous magnetoelectronic effect in a conductor|Paul C. Lou,Ravindra G. Bhardwaj,Anand Katailiha,Ward Beyermann,Sandeep Kumar###
(1729457, 1729457)
 The Py/p<missing VAR>-Si layeredstructure exhibit electronic multiferroicity due to superposition offlexoelectronic charge carrier doping and topological phonons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Topological phonons in an inhomogeneously strained silicon-5: Inhomogeneous magnetoelectronic effect in a conductor|Paul C. Lou,Ravindra G. Bhardwaj,Anand Katailiha,Ward Beyermann,Sandeep Kumar###
(1729618, 1729618)
 The observed modulations canalso be interpreted as incommensurate SD<missing VAR>W with wavelength of 142 um.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Topological phonons in an inhomogeneously strained silicon-5: Inhomogeneous magnetoelectronic effect in a conductor|Paul C. Lou,Ravindra G. Bhardwaj,Anand Katailiha,Ward Beyermann,Sandeep Kumar###
(1729620, 1729620)
 The observed modulations canalso be interpreted as incommensurate SD<missing VAR>W with wavelength of 142 um.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Controllable spin filtering and half metallicity in $β_{12}$-borophene nanoribbons|Fahimeh Norouzi,Mohsen Farokhnezhad,Mahdi Esmaeilzadeh,Bartlomiej Szafran###
(1729829, 1729829)
 Here, by combining non-equilibrium Greens<missing VAR> function (NEGF) andtight-binding (T<missing VAR>B) approximation, we study the charge and spin transportproperties through a beta12-borophene nanoribbon (BNR) with the differentedge shapes.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Controllable spin filtering and half metallicity in $β_{12}$-borophene nanoribbons|Fahimeh Norouzi,Mohsen Farokhnezhad,Mahdi Esmaeilzadeh,Bartlomiej Szafran###
(1729832, 1729832)
 Here, by combining non-equilibrium Greens<missing VAR> function (NEGF) andtight-binding (T<missing VAR>B) approximation, we study the charge and spin transportproperties through a beta12-borophene nanoribbon (BNR) with the differentedge shapes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Controllable spin filtering and half metallicity in $β_{12}$-borophene nanoribbons|Fahimeh Norouzi,Mohsen Farokhnezhad,Mahdi Esmaeilzadeh,Bartlomiej Szafran###
(1729844, 1729844)
 Here, by combining non-equilibrium Greens<missing VAR> function (NEGF) andtight-binding (T<missing VAR>B) approximation, we study the charge and spin transportproperties through a beta12-borophene nanoribbon (BNR) with the differentedge shapes.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BN
###Controllable spin filtering and half metallicity in $β_{12}$-borophene nanoribbons|Fahimeh Norouzi,Mohsen Farokhnezhad,Mahdi Esmaeilzadeh,Bartlomiej Szafran###
(1729879, 1729880)
 Here, by combining non-equilibrium Greens<missing VAR> function (NEGF) andtight-binding (T<missing VAR>B) approximation, we study the charge and spin transportproperties through a beta12-borophene nanoribbon (BNR) with the differentedge shapes.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BN
###Controllable spin filtering and half metallicity in $β_{12}$-borophene nanoribbons|Fahimeh Norouzi,Mohsen Farokhnezhad,Mahdi Esmaeilzadeh,Bartlomiej Szafran###
(1729904, 1729905)
 We show when a BNR<missing VAR> exposed to a nonlocal exchange magnetic field,the spin filtering occurs for both spin-up and spin-down so that the spindirection of transmitted electrons could be controlled by adjusting the energyof incoming electrons with the help of an external backgate voltage.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BN
###Controllable spin filtering and half metallicity in $β_{12}$-borophene nanoribbons|Fahimeh Norouzi,Mohsen Farokhnezhad,Mahdi Esmaeilzadeh,Bartlomiej Szafran###
(1730014, 1730015)
 It isfound that an armchair BNR<missing VAR> (ABNR) in the simultaneous presence of a transverseelectric field and a nonlocal exchange field indicates a half-metallic naturewhich is electrically controllable.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BN
###Controllable spin filtering and half metallicity in $β_{12}$-borophene nanoribbons|Fahimeh Norouzi,Mohsen Farokhnezhad,Mahdi Esmaeilzadeh,Bartlomiej Szafran###
(1730020, 1730021)
 It isfound that an armchair BNR<missing VAR> (ABNR) in the simultaneous presence of a transverseelectric field and a nonlocal exchange field indicates a half-metallic naturewhich is electrically controllable.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BN
###Controllable spin filtering and half metallicity in $β_{12}$-borophene nanoribbons|Fahimeh Norouzi,Mohsen Farokhnezhad,Mahdi Esmaeilzadeh,Bartlomiej Szafran###
(1730107, 1730108)
 Moreover, the influence of local exchangefield fields is evaluated by exposing the edges of ABNR<missing VAR> to ferromagnetic stripswith parallel and antiparallel configurations.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BN
###Controllable spin filtering and half metallicity in $β_{12}$-borophene nanoribbons|Fahimeh Norouzi,Mohsen Farokhnezhad,Mahdi Esmaeilzadeh,Bartlomiej Szafran###
(1730147, 1730148)
 Our findings show that the edgemanipulations in ABNRs lead to the emergence of a giant magnetoresistance and aperfect spin filter.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BN
###Controllable spin filtering and half metallicity in $β_{12}$-borophene nanoribbons|Fahimeh Norouzi,Mohsen Farokhnezhad,Mahdi Esmaeilzadeh,Bartlomiej Szafran###
(1730218, 1730219)
 Finally, we studied the effects of edge vacancies andAnderson disorder on the spin-dependent conductance of an ABNR<missing VAR> and find thatthe perfect spin polarization is not destroyed in the presence of Andersondisorder and various single vacancies.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BN
###Controllable spin filtering and half metallicity in $β_{12}$-borophene nanoribbons|Fahimeh Norouzi,Mohsen Farokhnezhad,Mahdi Esmaeilzadeh,Bartlomiej Szafran###
(1730285, 1730286)
 Our results reveal the outstanding spintransport properties of ABNRs for future spintronic devices.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HSI
###Superconductor-insulator transitions in three-dimensional indium-oxide at high pressures|Bar Hen,Victor Shelukhin,Eran Greenberg,Gregory Kh. Rozenberg,Aharon Kapitulnik,Alexander Palevski###
(1730347, 1730349)
 Experiments investigating magnetic-field-tuned superconductor-insulatortransition (HSIT) mostly focus on two-dimensional material systems where thetransition and its proximate ground-state phases, often exhibit features thatare seemingly at odds with the expected behavior.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[480.0, 2, 'D', 9]

In
###Superconductor-insulator transitions in three-dimensional indium-oxide at high pressures|Bar Hen,Victor Shelukhin,Eran Greenberg,Gregory Kh. Rozenberg,Aharon Kapitulnik,Alexander Palevski###
(1730446, 1730446)
 Here we present acomplementary study of a three-dimensional pressure-packed amorphousindium-oxide (InOx) powder where granularity controls the HSIT<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[383.0, 2, 'D', 8]

HSI
###Superconductor-insulator transitions in three-dimensional indium-oxide at high pressures|Bar Hen,Victor Shelukhin,Eran Greenberg,Gregory Kh. Rozenberg,Aharon Kapitulnik,Alexander Palevski###
(1730460, 1730462)
 Here we present acomplementary study of a three-dimensional pressure-packed amorphousindium-oxide (InOx) powder where granularity controls the HSIT<missing VAR>.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[367.0, 2, 'D', 8]

Pa
###Superconductor-insulator transitions in three-dimensional indium-oxide at high pressures|Bar Hen,Victor Shelukhin,Eran Greenberg,Gregory Kh. Rozenberg,Aharon Kapitulnik,Alexander Palevski###
(1730482, 1730482)
 Above a lowthreshold pressure of 0.2 G<missing VAR>Pa, vestiges of superconductivity are detected,although neither a true superconducting transition nor insulating behavior areobserved.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0
[347.0, 2, 'D', 7]

Pa
###Superconductor-insulator transitions in three-dimensional indium-oxide at high pressures|Bar Hen,Victor Shelukhin,Eran Greenberg,Gregory Kh. Rozenberg,Aharon Kapitulnik,Alexander Palevski###
(1730675, 1730675)
Above a threshold pressure of 6 G<missing VAR>Pa, the sample becomes fully packed, andsuperconductivity is robust, with T<missing VAR>C tunable with pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 2, 'D', 3]

C
###Superconductor-insulator transitions in three-dimensional indium-oxide at high pressures|Bar Hen,Victor Shelukhin,Eran Greenberg,Gregory Kh. Rozenberg,Aharon Kapitulnik,Alexander Palevski###
(1730702, 1730702)
Above a threshold pressure of 6 G<missing VAR>Pa, the sample becomes fully packed, andsuperconductivity is robust, with T<missing VAR>C tunable with pressure.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 2, 'D', 3]

PC25
###Superconductor-insulator transitions in three-dimensional indium-oxide at high pressures|Bar Hen,Victor Shelukhin,Eran Greenberg,Gregory Kh. Rozenberg,Aharon Kapitulnik,Alexander Palevski###
(1730722, 1730724)
 A quantum criticalpoint at PC25 G<missing VAR>Pa marks the complete suppression of superconductivity.
Featurization terminated normally.
0,0,0,0,0,0.9615384615384616,0,0,0,0,0,0,0,0,0.038461538461538464,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 2, 'D', 2]

Pa
###Superconductor-insulator transitions in three-dimensional indium-oxide at high pressures|Bar Hen,Victor Shelukhin,Eran Greenberg,Gregory Kh. Rozenberg,Aharon Kapitulnik,Alexander Palevski###
(1730727, 1730727)
 A quantum criticalpoint at PC25 G<missing VAR>Pa marks the complete suppression of superconductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 2, 'D', 2]

PC
###Superconductor-insulator transitions in three-dimensional indium-oxide at high pressures|Bar Hen,Victor Shelukhin,Eran Greenberg,Gregory Kh. Rozenberg,Aharon Kapitulnik,Alexander Palevski###
(1730753, 1730754)
 For afinite pressure below PC, a magnetic field is shown to induce a HSIT<missing VAR> from atrue zero-resistance superconducting state to a weakly insulating behavior.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 2, 'D', 1]

HSI
###Superconductor-insulator transitions in three-dimensional indium-oxide at high pressures|Bar Hen,Victor Shelukhin,Eran Greenberg,Gregory Kh. Rozenberg,Aharon Kapitulnik,Alexander Palevski###
(1730773, 1730775)
 For afinite pressure below PC, a magnetic field is shown to induce a HSIT<missing VAR> from atrue zero-resistance superconducting state to a weakly insulating behavior.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 2, 'D', 1]

HC
###Superconductor-insulator transitions in three-dimensional indium-oxide at high pressures|Bar Hen,Victor Shelukhin,Eran Greenberg,Gregory Kh. Rozenberg,Aharon Kapitulnik,Alexander Palevski###
(1730814, 1730815)
Determining the critical field, HC, we show that similar to the 2D behavior,the insulating-like state maintains a superconducting character, which isquenched at higher field, above which the magnetoresistance decreases to itsfermionic normal state value.
Featurization terminated normally.
0.5,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 2, 'D', 0]

EuGa4
###Giant magnetoresistance and topological Hall effect in the EuGa4 antiferromagnet|H. Zhang,X. Y. Zhu,Y. Xu,D. J. Gawryluk,W. Xie,S. L. Ju,M. Shi,T. Shiroka,Q. F. Zhan,E. Pomjakushina,T. Shang###
(1730914, 1730916)
Giant magnetoresistance and topological Hall effect in the EuGa4 antiferromagnet.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[172.0, 2, 'K', 3],[183.0, 9, 'T', 3]

EuGa4
###Giant magnetoresistance and topological Hall effect in the EuGa4 antiferromagnet|H. Zhang,X. Y. Zhu,Y. Xu,D. J. Gawryluk,W. Xie,S. L. Ju,M. Shi,T. Shiroka,Q. F. Zhan,E. Pomjakushina,T. Shang###
(1730947, 1730949)
 We report on systematic temperature- and magnetic field-dependent studies ofthe EuGa4 binary compound, which crystallizes in a centrosymmetrictetragonal BaAl4-type structure with space group I4/mmm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 2, 'K', 2],[150.0, 9, 'T', 2]

BaAl4
###Giant magnetoresistance and topological Hall effect in the EuGa4 antiferromagnet|H. Zhang,X. Y. Zhu,Y. Xu,D. J. Gawryluk,W. Xie,S. L. Ju,M. Shi,T. Shiroka,Q. F. Zhan,E. Pomjakushina,T. Shang###
(1730969, 1730971)
 We report on systematic temperature- and magnetic field-dependent studies ofthe EuGa4 binary compound, which crystallizes in a centrosymmetrictetragonal BaAl4-type structure with space group I4/mmm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 2, 'K', 2],[128.0, 9, 'T', 2]

I4
###Giant magnetoresistance and topological Hall effect in the EuGa4 antiferromagnet|H. Zhang,X. Y. Zhu,Y. Xu,D. J. Gawryluk,W. Xie,S. L. Ju,M. Shi,T. Shiroka,Q. F. Zhan,E. Pomjakushina,T. Shang###
(1730983, 1730984)
 We report on systematic temperature- and magnetic field-dependent studies ofthe EuGa4 binary compound, which crystallizes in a centrosymmetrictetragonal BaAl4-type structure with space group I4/mmm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 2, 'K', 2],[115.0, 9, 'T', 2]

EuGa4
###Giant magnetoresistance and topological Hall effect in the EuGa4 antiferromagnet|H. Zhang,X. Y. Zhu,Y. Xu,D. J. Gawryluk,W. Xie,S. L. Ju,M. Shi,T. Shiroka,Q. F. Zhan,E. Pomjakushina,T. Shang###
(1730998, 1731000)
 The electronicproperties of EuGa4 single crystals, with an antiferromagnetic (AFM)transition at T<missing VAR>mathrmN sim 16.4 K, were characterized via electricalresistivity and magnetization measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 2, 'K', 1],[99.0, 9, 'T', 1]

F
###Giant magnetoresistance and topological Hall effect in the EuGa4 antiferromagnet|H. Zhang,X. Y. Zhu,Y. Xu,D. J. Gawryluk,W. Xie,S. L. Ju,M. Shi,T. Shiroka,Q. F. Zhan,E. Pomjakushina,T. Shang###
(1731015, 1731015)
 The electronicproperties of EuGa4 single crystals, with an antiferromagnetic (AFM)transition at T<missing VAR>mathrmN sim 16.4 K, were characterized via electricalresistivity and magnetization measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 2, 'K', 1],[84.0, 9, 'T', 1]

N
###Giant magnetoresistance and topological Hall effect in the EuGa4 antiferromagnet|H. Zhang,X. Y. Zhu,Y. Xu,D. J. Gawryluk,W. Xie,S. L. Ju,M. Shi,T. Shiroka,Q. F. Zhan,E. Pomjakushina,T. Shang###
(1731026, 1731026)
 The electronicproperties of EuGa4 single crystals, with an antiferromagnetic (AFM)transition at T<missing VAR>mathrmN sim 16.4 K, were characterized via electricalresistivity and magnetization measurements.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 2, 'K', 1],[73.0, 9, 'T', 1]

K
###Giant magnetoresistance and topological Hall effect in the EuGa4 antiferromagnet|H. Zhang,X. Y. Zhu,Y. Xu,D. J. Gawryluk,W. Xie,S. L. Ju,M. Shi,T. Shiroka,Q. F. Zhan,E. Pomjakushina,T. Shang###
(1731032, 1731032)
 The electronicproperties of EuGa4 single crystals, with an antiferromagnetic (AFM)transition at T<missing VAR>mathrmN sim 16.4 K, were characterized via electricalresistivity and magnetization measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 2, 'K', 1],[67.0, 9, 'T', 1]

In
###Giant magnetoresistance and topological Hall effect in the EuGa4 antiferromagnet|H. Zhang,X. Y. Zhu,Y. Xu,D. J. Gawryluk,W. Xie,S. L. Ju,M. Shi,T. Shiroka,Q. F. Zhan,E. Pomjakushina,T. Shang###
(1731102, 1731102)
 In the AFM<missing VAR> state, EuGa4 undergoesa series of metamagnetic transitions in an applied magnetic field, clearlymanifested in its field-dependent electrical resistivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 2, 'K', 1],[3.0, 9, 'T', 1]

F
###Giant magnetoresistance and topological Hall effect in the EuGa4 antiferromagnet|H. Zhang,X. Y. Zhu,Y. Xu,D. J. Gawryluk,W. Xie,S. L. Ju,M. Shi,T. Shiroka,Q. F. Zhan,E. Pomjakushina,T. Shang###
(1731107, 1731107)
 In the AFM<missing VAR> state, EuGa4 undergoesa series of metamagnetic transitions in an applied magnetic field, clearlymanifested in its field-dependent electrical resistivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 2, 'K', 1],[8.0, 9, 'T', 1]

EuGa4
###Giant magnetoresistance and topological Hall effect in the EuGa4 antiferromagnet|H. Zhang,X. Y. Zhu,Y. Xu,D. J. Gawryluk,W. Xie,S. L. Ju,M. Shi,T. Shiroka,Q. F. Zhan,E. Pomjakushina,T. Shang###
(1731113, 1731115)
 In the AFM<missing VAR> state, EuGa4 undergoesa series of metamagnetic transitions in an applied magnetic field, clearlymanifested in its field-dependent electrical resistivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 2, 'K', 1],[14.0, 9, 'T', 1]

N
###Giant magnetoresistance and topological Hall effect in the EuGa4 antiferromagnet|H. Zhang,X. Y. Zhu,Y. Xu,D. J. Gawryluk,W. Xie,S. L. Ju,M. Shi,T. Shiroka,Q. F. Zhan,E. Pomjakushina,T. Shang###
(1731163, 1731163)
 Below T<missing VAR>mathrmN,in the sim4-7 T<missing VAR> field range, we observe also a clear hump-like anomaly inthe Hall resistivity which is part of the anomalous Hall resistivity.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 2, 'K', 2],[64.0, 9, 'T', 2]

BaAl4
###Giant magnetoresistance and topological Hall effect in the EuGa4 antiferromagnet|H. Zhang,X. Y. Zhu,Y. Xu,D. J. Gawryluk,W. Xie,S. L. Ju,M. Shi,T. Shiroka,Q. F. Zhan,E. Pomjakushina,T. Shang###
(1731308, 1731310)
 Therefore, the family of materials witha tetragonal BaAl4-type structure, to which EuGa4 and EuAl4 belong,seems to comprise suitable candidates on which one can study the interplayamong correlated-electron phenomena (such as charge-density wave or exoticmagnetism) with topological spin textures and topologically nontrivial bands.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[220.0, 2, 'K', 5],[209.0, 9, 'T', 5]

EuGa4
###Giant magnetoresistance and topological Hall effect in the EuGa4 antiferromagnet|H. Zhang,X. Y. Zhu,Y. Xu,D. J. Gawryluk,W. Xie,S. L. Ju,M. Shi,T. Shiroka,Q. F. Zhan,E. Pomjakushina,T. Shang###
(1731321, 1731323)
 Therefore, the family of materials witha tetragonal BaAl4-type structure, to which EuGa4 and EuAl4 belong,seems to comprise suitable candidates on which one can study the interplayamong correlated-electron phenomena (such as charge-density wave or exoticmagnetism) with topological spin textures and topologically nontrivial bands.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[233.0, 2, 'K', 5],[222.0, 9, 'T', 5]

EuAl4
###Giant magnetoresistance and topological Hall effect in the EuGa4 antiferromagnet|H. Zhang,X. Y. Zhu,Y. Xu,D. J. Gawryluk,W. Xie,S. L. Ju,M. Shi,T. Shiroka,Q. F. Zhan,E. Pomjakushina,T. Shang###
(1731327, 1731329)
 Therefore, the family of materials witha tetragonal BaAl4-type structure, to which EuGa4 and EuAl4 belong,seems to comprise suitable candidates on which one can study the interplayamong correlated-electron phenomena (such as charge-density wave or exoticmagnetism) with topological spin textures and topologically nontrivial bands.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[239.0, 2, 'K', 5],[228.0, 9, 'T', 5]

MoGe
###Magnetic field induced transition from a vortex liquid to Bose metal in ultrathin a-MoGe thin film|Surajit Dutta,John Jesudasan,Pratap Raychaudhuri###
(1731440, 1731441)
Magnetic field induced transition from a vortex liquid to Bose metal in ultrathin a-MoGe thin film.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 1.36, 'K', 2],[122.0, 36, 'kOe', 2],[169.0, 0, ',', 3],[197.0, 450, 'mK', 4],[235.0, 3, 'kOe', 4]

MoGe
###Magnetic field induced transition from a vortex liquid to Bose metal in ultrathin a-MoGe thin film|Surajit Dutta,John Jesudasan,Pratap Raychaudhuri###
(1731492, 1731493)
 We identify a magnetic field induced transition from a vortex liquid to Bosemetal in a 2-dimensional amorphous superconductor, a-MoGe, using a combinationof magnetotransport and scanning tunnelling spectroscopy (ST<missing VAR>S).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 1.36, 'K', 1],[70.0, 36, 'kOe', 1],[117.0, 0, ',', 2],[145.0, 450, 'mK', 3],[183.0, 3, 'kOe', 3]

S
###Magnetic field induced transition from a vortex liquid to Bose metal in ultrathin a-MoGe thin film|Surajit Dutta,John Jesudasan,Pratap Raychaudhuri###
(1731516, 1731516)
 We identify a magnetic field induced transition from a vortex liquid to Bosemetal in a 2-dimensional amorphous superconductor, a-MoGe, using a combinationof magnetotransport and scanning tunnelling spectroscopy (ST<missing VAR>S).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 1.36, 'K', 1],[47.0, 36, 'kOe', 1],[94.0, 0, ',', 2],[122.0, 450, 'mK', 3],[160.0, 3, 'kOe', 3]

S
###Magnetic field induced transition from a vortex liquid to Bose metal in ultrathin a-MoGe thin film|Surajit Dutta,John Jesudasan,Pratap Raychaudhuri###
(1731518, 1731518)
 We identify a magnetic field induced transition from a vortex liquid to Bosemetal in a 2-dimensional amorphous superconductor, a-MoGe, using a combinationof magnetotransport and scanning tunnelling spectroscopy (ST<missing VAR>S).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 1.36, 'K', 1],[45.0, 36, 'kOe', 1],[92.0, 0, ',', 2],[120.0, 450, 'mK', 3],[158.0, 3, 'kOe', 3]

Tc
###Magnetic field induced transition from a vortex liquid to Bose metal in ultrathin a-MoGe thin film|Surajit Dutta,John Jesudasan,Pratap Raychaudhuri###
(1731532, 1731532)
 Below thesuperconducting transition, Tc  1.36 K, the magnetoresistance isotherms crossat a nearly temperature independent magnetic field, Hc<missing VAR> 36 kOe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 1.36, 'K', 0],[31.0, 36, 'kOe', 0],[78.0, 0, ',', 1],[106.0, 450, 'mK', 2],[144.0, 3, 'kOe', 2]

H
###Magnetic field induced transition from a vortex liquid to Bose metal in ultrathin a-MoGe thin film|Surajit Dutta,John Jesudasan,Pratap Raychaudhuri###
(1731561, 1731561)
 Below thesuperconducting transition, Tc  1.36 K, the magnetoresistance isotherms crossat a nearly temperature independent magnetic field, Hc<missing VAR> 36 kOe.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 1.36, 'K', 0],[2.0, 36, 'kOe', 0],[49.0, 0, ',', 1],[77.0, 450, 'mK', 2],[115.0, 3, 'kOe', 2]

S
###Magnetic field induced transition from a vortex liquid to Bose metal in ultrathin a-MoGe thin film|Surajit Dutta,John Jesudasan,Pratap Raychaudhuri###
(1731628, 1731628)
 From ST<missing VAR>Sconductance maps at 450 mK we observe a very disordered vortex lattice at verylow fields that melts into a vortex liquid above 3 kOe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 1.36, 'K', 2],[65.0, 36, 'kOe', 2],[18.0, 0, ',', 1],[10.0, 450, 'mK', 0],[48.0, 3, 'kOe', 0]

S
###Magnetic field induced transition from a vortex liquid to Bose metal in ultrathin a-MoGe thin film|Surajit Dutta,John Jesudasan,Pratap Raychaudhuri###
(1731630, 1731630)
 From ST<missing VAR>Sconductance maps at 450 mK we observe a very disordered vortex lattice at verylow fields that melts into a vortex liquid above 3 kOe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 1.36, 'K', 2],[67.0, 36, 'kOe', 2],[20.0, 0, ',', 1],[8.0, 450, 'mK', 0],[46.0, 3, 'kOe', 0]

H
###Magnetic field induced transition from a vortex liquid to Bose metal in ultrathin a-MoGe thin film|Surajit Dutta,John Jesudasan,Pratap Raychaudhuri###
(1731683, 1731683)
 Up to Hc<missing VAR> thetunnelling spectra display superconducting gap and coherence peak over a broadbackground caused by electron-electron interactions, as expected in a vortexliquid.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 1.36, 'K', 3],[120.0, 36, 'kOe', 3],[73.0, 0, ',', 2],[45.0, 450, 'mK', 1],[7.0, 3, 'kOe', 1]

H
###Magnetic field induced transition from a vortex liquid to Bose metal in ultrathin a-MoGe thin film|Surajit Dutta,John Jesudasan,Pratap Raychaudhuri###
(1731744, 1731744)
 However, above Hc<missing VAR> the tunnelling spectra continue to display the gapbut the coherence peak gets completely suppressed, suggesting that Cooper pairslose their phase coherence.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[210.0, 1.36, 'K', 4],[181.0, 36, 'kOe', 4],[134.0, 0, ',', 3],[106.0, 450, 'mK', 2],[68.0, 3, 'kOe', 2]

H
###Magnetic field induced transition from a vortex liquid to Bose metal in ultrathin a-MoGe thin film|Surajit Dutta,John Jesudasan,Pratap Raychaudhuri###
(1731803, 1731803)
 We conclude that Hc<missing VAR> demarcates a transition froma vortex liquid to Bose metal, that eventually transforms to a regular metal ata higher field H where the gap vanishes in the electronic spectrum.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[269.0, 1.36, 'K', 5],[240.0, 36, 'kOe', 5],[193.0, 0, ',', 4],[165.0, 450, 'mK', 3],[127.0, 3, 'kOe', 3]

H
###Magnetic field induced transition from a vortex liquid to Bose metal in ultrathin a-MoGe thin film|Surajit Dutta,John Jesudasan,Pratap Raychaudhuri###
(1731851, 1731851)
 We conclude that Hc<missing VAR> demarcates a transition froma vortex liquid to Bose metal, that eventually transforms to a regular metal ata higher field H where the gap vanishes in the electronic spectrum.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[317.0, 1.36, 'K', 5],[288.0, 36, 'kOe', 5],[241.0, 0, ',', 4],[213.0, 450, 'mK', 3],[175.0, 3, 'kOe', 3]

Mn
###Three-dimensional ferromagnetism and magnetotransport in van der Waals Mn-intercalated tantalum disufide|Yu Liu,Zhixiang Hu,Eli Stavitski,Klaus Attenkofer,C. Petrovic###
(1731896, 1731896)
Three-dimensional ferromagnetism and magnetotransport in van der Waals Mn-intercalated tantalum disufide.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 2, 'D', 3],[234.0, 2, 'H', 5]

W
###Three-dimensional ferromagnetism and magnetotransport in van der Waals Mn-intercalated tantalum disufide|Yu Liu,Zhixiang Hu,Eli Stavitski,Klaus Attenkofer,C. Petrovic###
(1731913, 1731913)
 Van der Waals (vdW) ferromagnets are an important class of materials forspintronics applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 2, 'D', 2],[217.0, 2, 'H', 4]

W
###Three-dimensional ferromagnetism and magnetotransport in van der Waals Mn-intercalated tantalum disufide|Yu Liu,Zhixiang Hu,Eli Stavitski,Klaus Attenkofer,C. Petrovic###
(1731949, 1731949)
 The recent discovery of atomically vdW magnetsCrI3 and Cr2Ge2Te6 has triggered a renaissance in the area oftwo-dimensional (2D) magnetism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 2, 'D', 1],[181.0, 2, 'H', 3]

CrI3
###Three-dimensional ferromagnetism and magnetotransport in van der Waals Mn-intercalated tantalum disufide|Yu Liu,Zhixiang Hu,Eli Stavitski,Klaus Attenkofer,C. Petrovic###
(1731954, 1731956)
 The recent discovery of atomically vdW magnetsCrI3 and Cr2Ge2Te6 has triggered a renaissance in the area oftwo-dimensional (2D) magnetism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 2, 'D', 1],[174.0, 2, 'H', 3]

Cr2Ge2Te6
###Three-dimensional ferromagnetism and magnetotransport in van der Waals Mn-intercalated tantalum disufide|Yu Liu,Zhixiang Hu,Eli Stavitski,Klaus Attenkofer,C. Petrovic###
(1731960, 1731965)
 The recent discovery of atomically vdW magnetsCrI3 and Cr2Ge2Te6 has triggered a renaissance in the area oftwo-dimensional (2D) magnetism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 2, 'D', 1],[165.0, 2, 'H', 3]

H
###Three-dimensional ferromagnetism and magnetotransport in van der Waals Mn-intercalated tantalum disufide|Yu Liu,Zhixiang Hu,Eli Stavitski,Klaus Attenkofer,C. Petrovic###
(1732006, 1732006)
 Herein we systematically studied2H-Mn0.28TaS2 single crystal, a 2D vdW ferromagnet with Tc sim82.3 K and a large in-plane magnetic anisotropy.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 2, 'D', 0],[124.0, 2, 'H', 2]

Mn0.28TaS2
###Three-dimensional ferromagnetism and magnetotransport in van der Waals Mn-intercalated tantalum disufide|Yu Liu,Zhixiang Hu,Eli Stavitski,Klaus Attenkofer,C. Petrovic###
(1732008, 1732012)
 Herein we systematically studied2H-Mn0.28TaS2 single crystal, a 2D vdW ferromagnet with Tc sim82.3 K and a large in-plane magnetic anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6097560975609756,0,0,0,0,0,0,0,0,0.08536585365853659,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3048780487804878,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 2, 'D', 0],[118.0, 2, 'H', 2]

W
###Three-dimensional ferromagnetism and magnetotransport in van der Waals Mn-intercalated tantalum disufide|Yu Liu,Zhixiang Hu,Eli Stavitski,Klaus Attenkofer,C. Petrovic###
(1732023, 1732023)
 Herein we systematically studied2H-Mn0.28TaS2 single crystal, a 2D vdW ferromagnet with Tc sim82.3 K and a large in-plane magnetic anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 2, 'D', 0],[107.0, 2, 'H', 2]

K
###Three-dimensional ferromagnetism and magnetotransport in van der Waals Mn-intercalated tantalum disufide|Yu Liu,Zhixiang Hu,Eli Stavitski,Klaus Attenkofer,C. Petrovic###
(1732037, 1732037)
 Herein we systematically studied2H-Mn0.28TaS2 single crystal, a 2D vdW ferromagnet with Tc sim82.3 K and a large in-plane magnetic anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 2, 'D', 0],[93.0, 2, 'H', 2]

Mn
###Three-dimensional ferromagnetism and magnetotransport in van der Waals Mn-intercalated tantalum disufide|Yu Liu,Zhixiang Hu,Eli Stavitski,Klaus Attenkofer,C. Petrovic###
(1732054, 1732054)
 Mn K-edge x<missing VAR>-ray absorptionspectroscopy was measured to provide information on its electronic state andlocal atomic environment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 2, 'D', 1],[76.0, 2, 'H', 1]

K
###Three-dimensional ferromagnetism and magnetotransport in van der Waals Mn-intercalated tantalum disufide|Yu Liu,Zhixiang Hu,Eli Stavitski,Klaus Attenkofer,C. Petrovic###
(1732056, 1732056)
 Mn K-edge x<missing VAR>-ray absorptionspectroscopy was measured to provide information on its electronic state andlocal atomic environment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 2, 'D', 1],[74.0, 2, 'H', 1]

Mn0.28TaS2
###Three-dimensional ferromagnetism and magnetotransport in van der Waals Mn-intercalated tantalum disufide|Yu Liu,Zhixiang Hu,Eli Stavitski,Klaus Attenkofer,C. Petrovic###
(1732132, 1732136)
 The detailed magnetic isotherms measured in thevicinity of Tc indicates that the spin coupling inside 2H-Mn0.28TaS2is of a three-dimensional (3D) Heisenberg-type coupled with the attractivelong-range interaction between spins that decay as J(r)approx r<missing VAR>-4.85.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6097560975609756,0,0,0,0,0,0,0,0,0.08536585365853659,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3048780487804878,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 2, 'D', 2],[2.0, 2, 'H', 0]

S
###Three-dimensional ferromagnetism and magnetotransport in van der Waals Mn-intercalated tantalum disufide|Yu Liu,Zhixiang Hu,Eli Stavitski,Klaus Attenkofer,C. Petrovic###
(1732208, 1732208)
Both resistivity rho(T) and thermopower S(T) exhibit anomalies near Tc,confirming that the hole-type transport carriers strongly interact with localmoments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 2, 'D', 3],[78.0, 2, 'H', 1]

Mn3Si2Te6
###Polaronic transport and thermoelectricity in Mn$_3$Si$_2$Te$_6$ single crystals|Yu Liu,Zhixiang Hu,Milinda Abeykoon,Eli Stavitski,Klaus Attenkofer,Eric D. Bauer,C. Petrovic###
(1732303, 1732308)
Polaronic transport and thermoelectricity in Mn3Si2Te6 single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0.2727272727272727,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5454545454545454,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 74, 'K', 3],[209.0, -87, '%', 4],[236.0, 10, 'mV', 4],[241.0, 5, 'K', 4],[270.0, 20, 'K', 5],[302.0, 20, 'K', 5]

Mn3Si2Te6
###Polaronic transport and thermoelectricity in Mn$_3$Si$_2$Te$_6$ single crystals|Yu Liu,Zhixiang Hu,Milinda Abeykoon,Eli Stavitski,Klaus Attenkofer,Eric D. Bauer,C. Petrovic###
(1732352, 1732357)
 We carried out a comprehensive study of the structural, electrical transport,thermal and thermodynamic properties in ferrimagnetic Mn3Si2Te6 singlecrystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0.2727272727272727,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5454545454545454,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 74, 'K', 2],[160.0, -87, '%', 3],[187.0, 10, 'mV', 3],[192.0, 5, 'K', 3],[221.0, 20, 'K', 4],[253.0, 20, 'K', 4]

Mn
###Polaronic transport and thermoelectricity in Mn$_3$Si$_2$Te$_6$ single crystals|Yu Liu,Zhixiang Hu,Milinda Abeykoon,Eli Stavitski,Klaus Attenkofer,Eric D. Bauer,C. Petrovic###
(1732365, 1732365)
 Mn and Te K-edge X<missing VAR>-ray absorption spectroscopy and synchrotronpowder X<missing VAR>-ray diffraction were measured to provide information on the localatomic environment and the average crystal structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 74, 'K', 1],[152.0, -87, '%', 2],[179.0, 10, 'mV', 2],[184.0, 5, 'K', 2],[213.0, 20, 'K', 3],[245.0, 20, 'K', 3]

Te
###Polaronic transport and thermoelectricity in Mn$_3$Si$_2$Te$_6$ single crystals|Yu Liu,Zhixiang Hu,Milinda Abeykoon,Eli Stavitski,Klaus Attenkofer,Eric D. Bauer,C. Petrovic###
(1732369, 1732369)
 Mn and Te K-edge X<missing VAR>-ray absorption spectroscopy and synchrotronpowder X<missing VAR>-ray diffraction were measured to provide information on the localatomic environment and the average crystal structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 74, 'K', 1],[148.0, -87, '%', 2],[175.0, 10, 'mV', 2],[180.0, 5, 'K', 2],[209.0, 20, 'K', 3],[241.0, 20, 'K', 3]

K
###Polaronic transport and thermoelectricity in Mn$_3$Si$_2$Te$_6$ single crystals|Yu Liu,Zhixiang Hu,Milinda Abeykoon,Eli Stavitski,Klaus Attenkofer,Eric D. Bauer,C. Petrovic###
(1732371, 1732371)
 Mn and Te K-edge X<missing VAR>-ray absorption spectroscopy and synchrotronpowder X<missing VAR>-ray diffraction were measured to provide information on the localatomic environment and the average crystal structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 74, 'K', 1],[146.0, -87, '%', 2],[173.0, 10, 'mV', 2],[178.0, 5, 'K', 2],[207.0, 20, 'K', 3],[239.0, 20, 'K', 3]

Mn3Si2Te6
###Polaronic transport and thermoelectricity in Mn$_3$Si$_2$Te$_6$ single crystals|Yu Liu,Zhixiang Hu,Milinda Abeykoon,Eli Stavitski,Klaus Attenkofer,Eric D. Bauer,C. Petrovic###
(1732489, 1732494)
 Mn3Si2Te6 exhibits semiconductingbehavior along with a large negative magnetoresistance of -87% at Tc andrelatively high value of thermopower up to sim 10 mV/K at 5 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0.2727272727272727,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5454545454545454,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 74, 'K', 1],[23.0, -87, '%', 0],[50.0, 10, 'mV', 0],[55.0, 5, 'K', 0],[84.0, 20, 'K', 1],[116.0, 20, 'K', 1]

K
###Polaronic transport and thermoelectricity in Mn$_3$Si$_2$Te$_6$ single crystals|Yu Liu,Zhixiang Hu,Milinda Abeykoon,Eli Stavitski,Klaus Attenkofer,Eric D. Bauer,C. Petrovic###
(1732546, 1732546)
 Mn3Si2Te6 exhibits semiconductingbehavior along with a large negative magnetoresistance of -87% at Tc andrelatively high value of thermopower up to sim 10 mV/K at 5 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 74, 'K', 1],[29.0, -87, '%', 0],[2.0, 10, 'mV', 0],[3.0, 5, 'K', 0],[32.0, 20, 'K', 1],[64.0, 20, 'K', 1]

S
###Polaronic transport and thermoelectricity in Mn$_3$Si$_2$Te$_6$ single crystals|Yu Liu,Zhixiang Hu,Milinda Abeykoon,Eli Stavitski,Klaus Attenkofer,Eric D. Bauer,C. Petrovic###
(1732572, 1732572)
 Besides therapidly increasing resistivity rho(T) and thermopower S(T) below 20 K, thelarge discrepancy between activation energy for resistivity E<missing VAR>rho andthermopower E<missing VAR>S above 20 K indicates the polaronic transport mechanism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 74, 'K', 2],[55.0, -87, '%', 1],[28.0, 10, 'mV', 1],[23.0, 5, 'K', 1],[6.0, 20, 'K', 0],[38.0, 20, 'K', 0]

S
###Polaronic transport and thermoelectricity in Mn$_3$Si$_2$Te$_6$ single crystals|Yu Liu,Zhixiang Hu,Milinda Abeykoon,Eli Stavitski,Klaus Attenkofer,Eric D. Bauer,C. Petrovic###
(1732607, 1732607)
 Besides therapidly increasing resistivity rho(T) and thermopower S(T) below 20 K, thelarge discrepancy between activation energy for resistivity E<missing VAR>rho andthermopower E<missing VAR>S above 20 K indicates the polaronic transport mechanism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 74, 'K', 2],[90.0, -87, '%', 1],[63.0, 10, 'mV', 1],[58.0, 5, 'K', 1],[29.0, 20, 'K', 0],[3.0, 20, 'K', 0]

Mn3Si2Te6
###Polaronic transport and thermoelectricity in Mn$_3$Si$_2$Te$_6$ single crystals|Yu Liu,Zhixiang Hu,Milinda Abeykoon,Eli Stavitski,Klaus Attenkofer,Eric D. Bauer,C. Petrovic###
(1732640, 1732645)
Furthermore, the thermal conductivity kappa(T) of Mn3Si2Te6 isnotably rather low, comparable to Cr2Si2Te6, and is stronglysuppressed in magnetic field across Tc, indicating the presence of strongspin-lattice coupling, also similar with Cr2Si2Te6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0.2727272727272727,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5454545454545454,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[174.0, 74, 'K', 3],[123.0, -87, '%', 2],[96.0, 10, 'mV', 2],[91.0, 5, 'K', 2],[62.0, 20, 'K', 1],[30.0, 20, 'K', 1]

Cr2Si2Te6
###Polaronic transport and thermoelectricity in Mn$_3$Si$_2$Te$_6$ single crystals|Yu Liu,Zhixiang Hu,Milinda Abeykoon,Eli Stavitski,Klaus Attenkofer,Eric D. Bauer,C. Petrovic###
(1732661, 1732666)
Furthermore, the thermal conductivity kappa(T) of Mn3Si2Te6 isnotably rather low, comparable to Cr2Si2Te6, and is stronglysuppressed in magnetic field across Tc, indicating the presence of strongspin-lattice coupling, also similar with Cr2Si2Te6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[195.0, 74, 'K', 3],[144.0, -87, '%', 2],[117.0, 10, 'mV', 2],[112.0, 5, 'K', 2],[83.0, 20, 'K', 1],[51.0, 20, 'K', 1]

Cr2Si2Te6
###Polaronic transport and thermoelectricity in Mn$_3$Si$_2$Te$_6$ single crystals|Yu Liu,Zhixiang Hu,Milinda Abeykoon,Eli Stavitski,Klaus Attenkofer,Eric D. Bauer,C. Petrovic###
(1732714, 1732719)
Furthermore, the thermal conductivity kappa(T) of Mn3Si2Te6 isnotably rather low, comparable to Cr2Si2Te6, and is stronglysuppressed in magnetic field across Tc, indicating the presence of strongspin-lattice coupling, also similar with Cr2Si2Te6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[248.0, 74, 'K', 3],[197.0, -87, '%', 2],[170.0, 10, 'mV', 2],[165.0, 5, 'K', 2],[136.0, 20, 'K', 1],[104.0, 20, 'K', 1]

V
###Structures and physical properties of V-based kagome metals CsV$_{6}$Sb$_{6}$ and CsV$_{8}$Sb$_{12}$|Qiangwei Yin,Zhijun Tu,Chunsheng Gong,Shangjie Tian,Hechang Lei###
(1732740, 1732740)
Structures and physical properties of V-based kagome metals CsV6Sb6 and CsV8Sb12.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[243.0, 2, 'K', 5]

CsV6Sb6
###Structures and physical properties of V-based kagome metals CsV$_{6}$Sb$_{6}$ and CsV$_{8}$Sb$_{12}$|Qiangwei Yin,Zhijun Tu,Chunsheng Gong,Shangjie Tian,Hechang Lei###
(1732748, 1732752)
Structures and physical properties of V-based kagome metals CsV6Sb6 and CsV8Sb12.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.46153846153846156,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.46153846153846156,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[231.0, 2, 'K', 5]

CsV8Sb12
###Structures and physical properties of V-based kagome metals CsV$_{6}$Sb$_{6}$ and CsV$_{8}$Sb$_{12}$|Qiangwei Yin,Zhijun Tu,Chunsheng Gong,Shangjie Tian,Hechang Lei###
(1732756, 1732760)
Structures and physical properties of V-based kagome metals CsV6Sb6 and CsV8Sb12.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.38095238095238093,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0.047619047619047616,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[223.0, 2, 'K', 5]

V
###Structures and physical properties of V-based kagome metals CsV$_{6}$Sb$_{6}$ and CsV$_{8}$Sb$_{12}$|Qiangwei Yin,Zhijun Tu,Chunsheng Gong,Shangjie Tian,Hechang Lei###
(1732775, 1732775)
 We report two new members of V-based kagome metals CsV6Sb6 andCsV8Sb12.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[208.0, 2, 'K', 4]

CsV6Sb6
###Structures and physical properties of V-based kagome metals CsV$_{6}$Sb$_{6}$ and CsV$_{8}$Sb$_{12}$|Qiangwei Yin,Zhijun Tu,Chunsheng Gong,Shangjie Tian,Hechang Lei###
(1732783, 1732787)
 We report two new members of V-based kagome metals CsV6Sb6 andCsV8Sb12.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.46153846153846156,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.46153846153846156,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[196.0, 2, 'K', 4]

CsV8Sb12
###Structures and physical properties of V-based kagome metals CsV$_{6}$Sb$_{6}$ and CsV$_{8}$Sb$_{12}$|Qiangwei Yin,Zhijun Tu,Chunsheng Gong,Shangjie Tian,Hechang Lei###
(1732792, 1732796)
 We report two new members of V-based kagome metals CsV6Sb6 andCsV8Sb12.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.38095238095238093,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0.047619047619047616,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[187.0, 2, 'K', 4]

CsV6Sb6
###Structures and physical properties of V-based kagome metals CsV$_{6}$Sb$_{6}$ and CsV$_{8}$Sb$_{12}$|Qiangwei Yin,Zhijun Tu,Chunsheng Gong,Shangjie Tian,Hechang Lei###
(1732811, 1732815)
 The most striking structural feature of CsV6Sb6is the V kagome bilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.46153846153846156,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.46153846153846156,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[168.0, 2, 'K', 3]

V
###Structures and physical properties of V-based kagome metals CsV$_{6}$Sb$_{6}$ and CsV$_{8}$Sb$_{12}$|Qiangwei Yin,Zhijun Tu,Chunsheng Gong,Shangjie Tian,Hechang Lei###
(1732822, 1732822)
 The most striking structural feature of CsV6Sb6is the V kagome bilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 2, 'K', 3]

CsV8Sb12
###Structures and physical properties of V-based kagome metals CsV$_{6}$Sb$_{6}$ and CsV$_{8}$Sb$_{12}$|Qiangwei Yin,Zhijun Tu,Chunsheng Gong,Shangjie Tian,Hechang Lei###
(1732831, 1732835)
 For CsV8Sb12, there is an intergrowth oftwo-dimensional V kagome layers and one-dimensional V chains and the latterlead to the orthorhombic symmetry of this material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.38095238095238093,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0.047619047619047616,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 2, 'K', 2]

V
###Structures and physical properties of V-based kagome metals CsV$_{6}$Sb$_{6}$ and CsV$_{8}$Sb$_{12}$|Qiangwei Yin,Zhijun Tu,Chunsheng Gong,Shangjie Tian,Hechang Lei###
(1732853, 1732853)
 For CsV8Sb12, there is an intergrowth oftwo-dimensional V kagome layers and one-dimensional V chains and the latterlead to the orthorhombic symmetry of this material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 2, 'K', 2]

V
###Structures and physical properties of V-based kagome metals CsV$_{6}$Sb$_{6}$ and CsV$_{8}$Sb$_{12}$|Qiangwei Yin,Zhijun Tu,Chunsheng Gong,Shangjie Tian,Hechang Lei###
(1732865, 1732865)
 For CsV8Sb12, there is an intergrowth oftwo-dimensional V kagome layers and one-dimensional V chains and the latterlead to the orthorhombic symmetry of this material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 2, 'K', 2]

CsV3Sb5
###Structures and physical properties of V-based kagome metals CsV$_{6}$Sb$_{6}$ and CsV$_{8}$Sb$_{12}$|Qiangwei Yin,Zhijun Tu,Chunsheng Gong,Shangjie Tian,Hechang Lei###
(1732931, 1732935)
 More importantly, different from CsV3Sb5, the chargedensity wave state and superconductivity do not emerge in CsV6Sb6 andCsV8Sb12 when temperature is above 2 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5555555555555556,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 2, 'K', 0]

CsV6Sb6
###Structures and physical properties of V-based kagome metals CsV$_{6}$Sb$_{6}$ and CsV$_{8}$Sb$_{12}$|Qiangwei Yin,Zhijun Tu,Chunsheng Gong,Shangjie Tian,Hechang Lei###
(1732961, 1732965)
 More importantly, different from CsV3Sb5, the chargedensity wave state and superconductivity do not emerge in CsV6Sb6 andCsV8Sb12 when temperature is above 2 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.46153846153846156,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.46153846153846156,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 2, 'K', 0]

CsV8Sb12
###Structures and physical properties of V-based kagome metals CsV$_{6}$Sb$_{6}$ and CsV$_{8}$Sb$_{12}$|Qiangwei Yin,Zhijun Tu,Chunsheng Gong,Shangjie Tian,Hechang Lei###
(1732970, 1732974)
 More importantly, different from CsV3Sb5, the chargedensity wave state and superconductivity do not emerge in CsV6Sb6 andCsV8Sb12 when temperature is above 2 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.38095238095238093,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0.047619047619047616,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 2, 'K', 0]

V
###Structures and physical properties of V-based kagome metals CsV$_{6}$Sb$_{6}$ and CsV$_{8}$Sb$_{12}$|Qiangwei Yin,Zhijun Tu,Chunsheng Gong,Shangjie Tian,Hechang Lei###
(1733067, 1733067)
 The discovery of these twonew V-based kagome metals sheds light on the exploration of correlatedtopological materials based on kagome lattice.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 2, 'K', 2]

Sr2
###Persistent large anisotropic magnetoresistance and insulator to metal transition in spin-orbit coupled antiferromagnets Sr2(Ir1-xGax)O4|Haowen Wang,Wei Wang,Ni Hu,Tianci Duan,Songliu Yuan,Shuai Dong,Chengliang Lu,Jun-Ming Liu###
(1733139, 1733140)
Persistent large anisotropic magnetoresistance and insulator to metal transition in spin-orbit coupled antiferromagnets Sr2(Ir1-xGax)O4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[227.0, 0, '<', 3],[299.0, 16.8, '%', 4],[303.0, 50, 'K', 4],[363.0, 0.05, ',', 5],[381.0, 1, '%', 5]

Ir1-x
###Persistent large anisotropic magnetoresistance and insulator to metal transition in spin-orbit coupled antiferromagnets Sr2(Ir1-xGax)O4|Haowen Wang,Wei Wang,Ni Hu,Tianci Duan,Songliu Yuan,Shuai Dong,Chengliang Lu,Jun-Ming Liu###
(1733142, 1733145)
Persistent large anisotropic magnetoresistance and insulator to metal transition in spin-orbit coupled antiferromagnets Sr2(Ir1-xGax)O4.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[222.0, 0, '<', 3],[294.0, 16.8, '%', 4],[298.0, 50, 'K', 4],[358.0, 0.05, ',', 5],[376.0, 1, '%', 5]

O4
###Persistent large anisotropic magnetoresistance and insulator to metal transition in spin-orbit coupled antiferromagnets Sr2(Ir1-xGax)O4|Haowen Wang,Wei Wang,Ni Hu,Tianci Duan,Songliu Yuan,Shuai Dong,Chengliang Lu,Jun-Ming Liu###
(1733148, 1733149)
Persistent large anisotropic magnetoresistance and insulator to metal transition in spin-orbit coupled antiferromagnets Sr2(Ir1-xGax)O4.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[218.0, 0, '<', 3],[290.0, 16.8, '%', 4],[294.0, 50, 'K', 4],[354.0, 0.05, ',', 5],[372.0, 1, '%', 5]

F
###Persistent large anisotropic magnetoresistance and insulator to metal transition in spin-orbit coupled antiferromagnets Sr2(Ir1-xGax)O4|Haowen Wang,Wei Wang,Ni Hu,Tianci Duan,Songliu Yuan,Shuai Dong,Chengliang Lu,Jun-Ming Liu###
(1733156, 1733156)
 Antiferromagnetic (AFM) spintronics, where magneto-transport is governed byan antiferromagnet instead of a ferromagnet, opens fascinating new perspectivesfor both fundamental research and device technology, owing to their intrinsicappealing properties like rigidness to magnetic field, absence of stray field,and ultrafast spin dynamics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[211.0, 0, '<', 2],[283.0, 16.8, '%', 3],[287.0, 50, 'K', 3],[347.0, 0.05, ',', 4],[365.0, 1, '%', 4]

F
###Persistent large anisotropic magnetoresistance and insulator to metal transition in spin-orbit coupled antiferromagnets Sr2(Ir1-xGax)O4|Haowen Wang,Wei Wang,Ni Hu,Tianci Duan,Songliu Yuan,Shuai Dong,Chengliang Lu,Jun-Ming Liu###
(1733285, 1733285)
 One of the urgent challenges, hindering therealization of the full potential of AFM<missing VAR> spintronics, has been the performancegap between AFM<missing VAR> metals and insulators.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 0, '<', 1],[154.0, 16.8, '%', 2],[158.0, 50, 'K', 2],[218.0, 0.05, ',', 3],[236.0, 1, '%', 3]

F
###Persistent large anisotropic magnetoresistance and insulator to metal transition in spin-orbit coupled antiferromagnets Sr2(Ir1-xGax)O4|Haowen Wang,Wei Wang,Ni Hu,Tianci Duan,Songliu Yuan,Shuai Dong,Chengliang Lu,Jun-Ming Liu###
(1733305, 1733305)
 One of the urgent challenges, hindering therealization of the full potential of AFM<missing VAR> spintronics, has been the performancegap between AFM<missing VAR> metals and insulators.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 0, '<', 1],[134.0, 16.8, '%', 2],[138.0, 50, 'K', 2],[198.0, 0.05, ',', 3],[216.0, 1, '%', 3]

Sr2
###Persistent large anisotropic magnetoresistance and insulator to metal transition in spin-orbit coupled antiferromagnets Sr2(Ir1-xGax)O4|Haowen Wang,Wei Wang,Ni Hu,Tianci Duan,Songliu Yuan,Shuai Dong,Chengliang Lu,Jun-Ming Liu###
(1733354, 1733355)
 Here, we demonstrate the insulator-metaltransition and persistently large anisotropic magnetoresistance (AMR) in singlecrystals Sr2(Ir1-xGax)O4 (0<x<missing VAR><0.09) which host the same basal-plane AFM<missing VAR> latticewith strong spin-orbit coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 0, '<', 0],[84.0, 16.8, '%', 1],[88.0, 50, 'K', 1],[148.0, 0.05, ',', 2],[166.0, 1, '%', 2]

Ir1-x
###Persistent large anisotropic magnetoresistance and insulator to metal transition in spin-orbit coupled antiferromagnets Sr2(Ir1-xGax)O4|Haowen Wang,Wei Wang,Ni Hu,Tianci Duan,Songliu Yuan,Shuai Dong,Chengliang Lu,Jun-Ming Liu###
(1733357, 1733360)
 Here, we demonstrate the insulator-metaltransition and persistently large anisotropic magnetoresistance (AMR) in singlecrystals Sr2(Ir1-xGax)O4 (0<x<missing VAR><0.09) which host the same basal-plane AFM<missing VAR> latticewith strong spin-orbit coupling.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[7.0, 0, '<', 0],[79.0, 16.8, '%', 1],[83.0, 50, 'K', 1],[143.0, 0.05, ',', 2],[161.0, 1, '%', 2]

O4
###Persistent large anisotropic magnetoresistance and insulator to metal transition in spin-orbit coupled antiferromagnets Sr2(Ir1-xGax)O4|Haowen Wang,Wei Wang,Ni Hu,Tianci Duan,Songliu Yuan,Shuai Dong,Chengliang Lu,Jun-Ming Liu###
(1733363, 1733364)
 Here, we demonstrate the insulator-metaltransition and persistently large anisotropic magnetoresistance (AMR) in singlecrystals Sr2(Ir1-xGax)O4 (0<x<missing VAR><0.09) which host the same basal-plane AFM<missing VAR> latticewith strong spin-orbit coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 0, '<', 0],[75.0, 16.8, '%', 1],[79.0, 50, 'K', 1],[139.0, 0.05, ',', 2],[157.0, 1, '%', 2]

F
###Persistent large anisotropic magnetoresistance and insulator to metal transition in spin-orbit coupled antiferromagnets Sr2(Ir1-xGax)O4|Haowen Wang,Wei Wang,Ni Hu,Tianci Duan,Songliu Yuan,Shuai Dong,Chengliang Lu,Jun-Ming Liu###
(1733387, 1733387)
 Here, we demonstrate the insulator-metaltransition and persistently large anisotropic magnetoresistance (AMR) in singlecrystals Sr2(Ir1-xGax)O4 (0<x<missing VAR><0.09) which host the same basal-plane AFM<missing VAR> latticewith strong spin-orbit coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 0, '<', 0],[52.0, 16.8, '%', 1],[56.0, 50, 'K', 1],[116.0, 0.05, ',', 2],[134.0, 1, '%', 2]

Sr2IrO4
###Persistent large anisotropic magnetoresistance and insulator to metal transition in spin-orbit coupled antiferromagnets Sr2(Ir1-xGax)O4|Haowen Wang,Wei Wang,Ni Hu,Tianci Duan,Songliu Yuan,Shuai Dong,Chengliang Lu,Jun-Ming Liu###
(1733410, 1733414)
 The non-doped Sr2IrO4 shows the insulatingtransport with the AMR as big as 16.8% at 50 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 0, '<', 1],[25.0, 16.8, '%', 0],[29.0, 50, 'K', 0],[89.0, 0.05, ',', 1],[107.0, 1, '%', 1]

Ga
###Persistent large anisotropic magnetoresistance and insulator to metal transition in spin-orbit coupled antiferromagnets Sr2(Ir1-xGax)O4|Haowen Wang,Wei Wang,Ni Hu,Tianci Duan,Songliu Yuan,Shuai Dong,Chengliang Lu,Jun-Ming Liu###
(1733448, 1733448)
 The Ga substitution of Irallows a gradual reduction of electrical resistivity, and a clearinsulator-to-metal transition is identified in doped samples with x<missing VAR> above 0.05,while the AMR can still have 1%, sizable in comparison with those in AFM<missing VAR>metals reported so far.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 0, '<', 2],[9.0, 16.8, '%', 1],[5.0, 50, 'K', 1],[55.0, 0.05, ',', 0],[73.0, 1, '%', 0]

Ir
###Persistent large anisotropic magnetoresistance and insulator to metal transition in spin-orbit coupled antiferromagnets Sr2(Ir1-xGax)O4|Haowen Wang,Wei Wang,Ni Hu,Tianci Duan,Songliu Yuan,Shuai Dong,Chengliang Lu,Jun-Ming Liu###
(1733454, 1733454)
 The Ga substitution of Irallows a gradual reduction of electrical resistivity, and a clearinsulator-to-metal transition is identified in doped samples with x<missing VAR> above 0.05,while the AMR can still have 1%, sizable in comparison with those in AFM<missing VAR>metals reported so far.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 0, '<', 2],[15.0, 16.8, '%', 1],[11.0, 50, 'K', 1],[49.0, 0.05, ',', 0],[67.0, 1, '%', 0]

F
###Persistent large anisotropic magnetoresistance and insulator to metal transition in spin-orbit coupled antiferromagnets Sr2(Ir1-xGax)O4|Haowen Wang,Wei Wang,Ni Hu,Tianci Duan,Songliu Yuan,Shuai Dong,Chengliang Lu,Jun-Ming Liu###
(1733538, 1733538)
 The Ga substitution of Irallows a gradual reduction of electrical resistivity, and a clearinsulator-to-metal transition is identified in doped samples with x<missing VAR> above 0.05,while the AMR can still have 1%, sizable in comparison with those in AFM<missing VAR>metals reported so far.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[171.0, 0, '<', 2],[99.0, 16.8, '%', 1],[95.0, 50, 'K', 1],[35.0, 0.05, ',', 0],[17.0, 1, '%', 0]

Sr2
###Persistent large anisotropic magnetoresistance and insulator to metal transition in spin-orbit coupled antiferromagnets Sr2(Ir1-xGax)O4|Haowen Wang,Wei Wang,Ni Hu,Tianci Duan,Songliu Yuan,Shuai Dong,Chengliang Lu,Jun-Ming Liu###
(1733624, 1733625)
 It is suggested that the spin-orbit coupledantiferromagnets Sr2(Ir1-xGax)O4 are promising candidate materials for AFM<missing VAR>spintronics, providing a rare opportunity to integrate the superior spintronicfunctionalities of AFM<missing VAR> metals and insulators.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[257.0, 0, '<', 4],[185.0, 16.8, '%', 3],[181.0, 50, 'K', 3],[121.0, 0.05, ',', 2],[103.0, 1, '%', 2]

Ir1-x
###Persistent large anisotropic magnetoresistance and insulator to metal transition in spin-orbit coupled antiferromagnets Sr2(Ir1-xGax)O4|Haowen Wang,Wei Wang,Ni Hu,Tianci Duan,Songliu Yuan,Shuai Dong,Chengliang Lu,Jun-Ming Liu###
(1733627, 1733630)
 It is suggested that the spin-orbit coupledantiferromagnets Sr2(Ir1-xGax)O4 are promising candidate materials for AFM<missing VAR>spintronics, providing a rare opportunity to integrate the superior spintronicfunctionalities of AFM<missing VAR> metals and insulators.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[260.0, 0, '<', 4],[188.0, 16.8, '%', 3],[184.0, 50, 'K', 3],[124.0, 0.05, ',', 2],[106.0, 1, '%', 2]

O4
###Persistent large anisotropic magnetoresistance and insulator to metal transition in spin-orbit coupled antiferromagnets Sr2(Ir1-xGax)O4|Haowen Wang,Wei Wang,Ni Hu,Tianci Duan,Songliu Yuan,Shuai Dong,Chengliang Lu,Jun-Ming Liu###
(1733633, 1733634)
 It is suggested that the spin-orbit coupledantiferromagnets Sr2(Ir1-xGax)O4 are promising candidate materials for AFM<missing VAR>spintronics, providing a rare opportunity to integrate the superior spintronicfunctionalities of AFM<missing VAR> metals and insulators.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[266.0, 0, '<', 4],[194.0, 16.8, '%', 3],[190.0, 50, 'K', 3],[130.0, 0.05, ',', 2],[112.0, 1, '%', 2]

F
###Persistent large anisotropic magnetoresistance and insulator to metal transition in spin-orbit coupled antiferromagnets Sr2(Ir1-xGax)O4|Haowen Wang,Wei Wang,Ni Hu,Tianci Duan,Songliu Yuan,Shuai Dong,Chengliang Lu,Jun-Ming Liu###
(1733647, 1733647)
 It is suggested that the spin-orbit coupledantiferromagnets Sr2(Ir1-xGax)O4 are promising candidate materials for AFM<missing VAR>spintronics, providing a rare opportunity to integrate the superior spintronicfunctionalities of AFM<missing VAR> metals and insulators.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[280.0, 0, '<', 4],[208.0, 16.8, '%', 3],[204.0, 50, 'K', 3],[144.0, 0.05, ',', 2],[126.0, 1, '%', 2]

F
###Persistent large anisotropic magnetoresistance and insulator to metal transition in spin-orbit coupled antiferromagnets Sr2(Ir1-xGax)O4|Haowen Wang,Wei Wang,Ni Hu,Tianci Duan,Songliu Yuan,Shuai Dong,Chengliang Lu,Jun-Ming Liu###
(1733678, 1733678)
 It is suggested that the spin-orbit coupledantiferromagnets Sr2(Ir1-xGax)O4 are promising candidate materials for AFM<missing VAR>spintronics, providing a rare opportunity to integrate the superior spintronicfunctionalities of AFM<missing VAR> metals and insulators.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[311.0, 0, '<', 4],[239.0, 16.8, '%', 3],[235.0, 50, 'K', 3],[175.0, 0.05, ',', 2],[157.0, 1, '%', 2]

KTaO3
###Spontaneous rotational symmetry breaking in KTaO$_3$ heterointerface superconductors|Guanqun Zhang,Lijie Wang,Jinghui Wang,Guoan Li,Guangyi Huang,Guang Yang,Huanyi Xue,Zhongfeng Ning,Yueshen Wu,Jin-Peng Xu,Yanru Song,Zhenghua An,Changlin Zheng,Jie Shen,Jun Li,Yan Chen,Wei Li###
(1733706, 1733709)
Spontaneous rotational symmetry breaking in KTaO3 heterointerface superconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 1.86, 'K', 3]

YAlO3/K
###Spontaneous rotational symmetry breaking in KTaO$_3$ heterointerface superconductors|Guanqun Zhang,Lijie Wang,Jinghui Wang,Guoan Li,Guangyi Huang,Guang Yang,Huanyi Xue,Zhongfeng Ning,Yueshen Wu,Jin-Peng Xu,Yanru Song,Zhenghua An,Changlin Zheng,Jie Shen,Jun Li,Yan Chen,Wei Li###
(1733836, 1733841)
 Here, we report an experimental observation ofspontaneous rotational symmetry breaking of superconductivity at theheterointerface of amorphous (a)-YAlO3/KTaO3(111) with a superconductingtransition temperature of 1.86 K.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[20.0, 1.86, 'K', 0]

O3
###Spontaneous rotational symmetry breaking in KTaO$_3$ heterointerface superconductors|Guanqun Zhang,Lijie Wang,Jinghui Wang,Guoan Li,Guangyi Huang,Guang Yang,Huanyi Xue,Zhongfeng Ning,Yueshen Wu,Jin-Peng Xu,Yanru Song,Zhenghua An,Changlin Zheng,Jie Shen,Jun Li,Yan Chen,Wei Li###
(1733843, 1733844)
 Here, we report an experimental observation ofspontaneous rotational symmetry breaking of superconductivity at theheterointerface of amorphous (a)-YAlO3/KTaO3(111) with a superconductingtransition temperature of 1.86 K.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 1.86, 'K', 0]

YAlO3/KTaO3
###Spontaneous rotational symmetry breaking in KTaO$_3$ heterointerface superconductors|Guanqun Zhang,Lijie Wang,Jinghui Wang,Guoan Li,Guangyi Huang,Guang Yang,Huanyi Xue,Zhongfeng Ning,Yueshen Wu,Jin-Peng Xu,Yanru Song,Zhenghua An,Changlin Zheng,Jie Shen,Jun Li,Yan Chen,Wei Li###
(1734035, 1734043)
 We attribute this behavior to themixed-parity superconducting state, which is an admixture of emphs<missing VAR>-wave andemphp<missing VAR>-wave pairing components induced by strong spin-orbit coupling inherentto inversion symmetry breaking at the heterointerface of a-YAlO3/KTaO3.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[174.0, 1.86, 'K', 2]

KTaO3
###Spontaneous rotational symmetry breaking in KTaO$_3$ heterointerface superconductors|Guanqun Zhang,Lijie Wang,Jinghui Wang,Guoan Li,Guangyi Huang,Guang Yang,Huanyi Xue,Zhongfeng Ning,Yueshen Wu,Jin-Peng Xu,Yanru Song,Zhenghua An,Changlin Zheng,Jie Shen,Jun Li,Yan Chen,Wei Li###
(1734074, 1734077)
Our work suggests an unconventional nature of the underlying pairinginteraction in the KTaO3 heterointerface superconductors, and brings a newbroad of perspective on understanding non-trivial superconducting properties atthe artificial heterointerfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[213.0, 1.86, 'K', 3]

Fe5GeTe2
###Tuning the Room Temperature Ferromagnetism in Fe5GeTe2 by Arsenic Substitution|Andrew F. May,Jiaqiang Yan,Raphael Hermann,Mao-Hua Du,Michael A. McGuire###
(1734141, 1734145)
Tuning the Room Temperature Ferromagnetism in Fe5GeTe2 by Arsenic Substitution.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.625,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 5, '%', 2]

In
###Tuning the Room Temperature Ferromagnetism in Fe5GeTe2 by Arsenic Substitution|Andrew F. May,Jiaqiang Yan,Raphael Hermann,Mao-Hua Du,Michael A. McGuire###
(1734154, 1734154)
 In order to tune the magnetic properties of the cleavable high-Curietemperature ferromagnet Fe5-xGeTe2, the effect of increasing theelectron count through arsenic substitution has been investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 5, '%', 1]

Fe5-xGeTe2
###Tuning the Room Temperature Ferromagnetism in Fe5GeTe2 by Arsenic Substitution|Andrew F. May,Jiaqiang Yan,Raphael Hermann,Mao-Hua Du,Michael A. McGuire###
(1734183, 1734189)
 In order to tune the magnetic properties of the cleavable high-Curietemperature ferromagnet Fe5-xGeTe2, the effect of increasing theelectron count through arsenic substitution has been investigated.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[45.0, 5, '%', 1]

As
###Tuning the Room Temperature Ferromagnetism in Fe5GeTe2 by Arsenic Substitution|Andrew F. May,Jiaqiang Yan,Raphael Hermann,Mao-Hua Du,Michael A. McGuire###
(1734279, 1734279)
 Smalladditions of arsenic (2.5 and 5%) seemingly enhance ferromagnetic order inpolycrystalline samples by quenching fluctuations on one of the three magneticsublattices, whereas larger As concentrations decrease the ferromagnetic Curietemperature (T<missing VAR>rm C) and saturation magnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 5, '%', 0]

C
###Tuning the Room Temperature Ferromagnetism in Fe5GeTe2 by Arsenic Substitution|Andrew F. May,Jiaqiang Yan,Raphael Hermann,Mao-Hua Du,Michael A. McGuire###
(1734298, 1734298)
 Smalladditions of arsenic (2.5 and 5%) seemingly enhance ferromagnetic order inpolycrystalline samples by quenching fluctuations on one of the three magneticsublattices, whereas larger As concentrations decrease the ferromagnetic Curietemperature (T<missing VAR>rm C) and saturation magnetization.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 5, '%', 0]

Fe4.8AsTe2
###Tuning the Room Temperature Ferromagnetism in Fe5GeTe2 by Arsenic Substitution|Andrew F. May,Jiaqiang Yan,Raphael Hermann,Mao-Hua Du,Michael A. McGuire###
(1734327, 1734331)
 This work alsodescribes the growth and characterization of Fe4.8AsTe2 single crystalsthat are structurally analogous to Fe5-xGeTe2 but with some phasestability complications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6153846153846154,0,0,0,0,0,0,0.12820512820512822,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25641025641025644,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 5, '%', 1]

Fe5-xGeTe2
###Tuning the Room Temperature Ferromagnetism in Fe5GeTe2 by Arsenic Substitution|Andrew F. May,Jiaqiang Yan,Raphael Hermann,Mao-Hua Du,Michael A. McGuire###
(1734348, 1734354)
 This work alsodescribes the growth and characterization of Fe4.8AsTe2 single crystalsthat are structurally analogous to Fe5-xGeTe2 but with some phasestability complications.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[114.0, 5, '%', 1]

Fe4.8AsTe2
###Tuning the Room Temperature Ferromagnetism in Fe5GeTe2 by Arsenic Substitution|Andrew F. May,Jiaqiang Yan,Raphael Hermann,Mao-Hua Du,Michael A. McGuire###
(1734385, 1734389)
 Magnetization measurements reveal dominantantiferromagnetic behavior in Fe4.8AsTe2 with a Ne<missing VAR>el temperature ofT<missing VAR>rm N approx42K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6153846153846154,0,0,0,0,0,0,0.12820512820512822,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25641025641025644,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 5, '%', 2]

N
###Tuning the Room Temperature Ferromagnetism in Fe5GeTe2 by Arsenic Substitution|Andrew F. May,Jiaqiang Yan,Raphael Hermann,Mao-Hua Du,Michael A. McGuire###
(1734395, 1734395)
 Magnetization measurements reveal dominantantiferromagnetic behavior in Fe4.8AsTe2 with a Ne<missing VAR>el temperature ofT<missing VAR>rm N approx42K.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 5, '%', 2]

N
###Tuning the Room Temperature Ferromagnetism in Fe5GeTe2 by Arsenic Substitution|Andrew F. May,Jiaqiang Yan,Raphael Hermann,Mao-Hua Du,Michael A. McGuire###
(1734407, 1734407)
 Magnetization measurements reveal dominantantiferromagnetic behavior in Fe4.8AsTe2 with a Ne<missing VAR>el temperature ofT<missing VAR>rm N approx42K.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 5, '%', 2]

K
###Tuning the Room Temperature Ferromagnetism in Fe5GeTe2 by Arsenic Substitution|Andrew F. May,Jiaqiang Yan,Raphael Hermann,Mao-Hua Du,Michael A. McGuire###
(1734411, 1734411)
 Magnetization measurements reveal dominantantiferromagnetic behavior in Fe4.8AsTe2 with a Ne<missing VAR>el temperature ofT<missing VAR>rm N approx42K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[177.0, 5, '%', 2]

N
###Tuning the Room Temperature Ferromagnetism in Fe5GeTe2 by Arsenic Substitution|Andrew F. May,Jiaqiang Yan,Raphael Hermann,Mao-Hua Du,Michael A. McGuire###
(1734429, 1734429)
 A field-induced spin-flop below T<missing VAR>rm N resultsin a switch from negative to positive magnetoresistance, with significanthysteresis causing butterfly-shaped resistance loops.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[195.0, 5, '%', 3]

In
###Tuning the Room Temperature Ferromagnetism in Fe5GeTe2 by Arsenic Substitution|Andrew F. May,Jiaqiang Yan,Raphael Hermann,Mao-Hua Du,Michael A. McGuire###
(1734469, 1734469)
 In addition to reportingthe properties of Fe4.8AsTe2, this work shows the importance ofmanipulating the individual magnetic sublattices in Fe5-xGeTe2 andmotivates further efforts to control the magnetic properties in relatedmaterials by fine tuning of the Fermi energy or crystal chemistry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[235.0, 5, '%', 4]

Fe4.8AsTe2
###Tuning the Room Temperature Ferromagnetism in Fe5GeTe2 by Arsenic Substitution|Andrew F. May,Jiaqiang Yan,Raphael Hermann,Mao-Hua Du,Michael A. McGuire###
(1734484, 1734488)
 In addition to reportingthe properties of Fe4.8AsTe2, this work shows the importance ofmanipulating the individual magnetic sublattices in Fe5-xGeTe2 andmotivates further efforts to control the magnetic properties in relatedmaterials by fine tuning of the Fermi energy or crystal chemistry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6153846153846154,0,0,0,0,0,0,0.12820512820512822,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25641025641025644,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[250.0, 5, '%', 4]

Fe5-xGeTe2
###Tuning the Room Temperature Ferromagnetism in Fe5GeTe2 by Arsenic Substitution|Andrew F. May,Jiaqiang Yan,Raphael Hermann,Mao-Hua Du,Michael A. McGuire###
(1734516, 1734522)
 In addition to reportingthe properties of Fe4.8AsTe2, this work shows the importance ofmanipulating the individual magnetic sublattices in Fe5-xGeTe2 andmotivates further efforts to control the magnetic properties in relatedmaterials by fine tuning of the Fermi energy or crystal chemistry.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[282.0, 5, '%', 4]

HgTe
###HgTe quantum wells for QHE metrology under soft cryomagnetic conditions: permanent magnets and liquid ${^4He}$ temperatures|I. Yahniuk,A. Kazakov,B. Jouault,S. S. Krishtopenko,S. Kret,G. Grabecki,G. Cywiński,N. N. Mikhailov,S. A. Dvoretskii,J. Przybytek,V. I. Gavrilenko,F. Teppe,T. Dietl,W. Knap###
(1734579, 1734580)
HgTe quantum wells for QHE metrology under soft cryomagnetic conditions permanent magnets and liquid 4He temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[296.0, 0.82, 'T', 3]

He
###HgTe quantum wells for QHE metrology under soft cryomagnetic conditions: permanent magnets and liquid ${^4He}$ temperatures|I. Yahniuk,A. Kazakov,B. Jouault,S. S. Krishtopenko,S. Kret,G. Grabecki,G. Cywiński,N. N. Mikhailov,S. A. Dvoretskii,J. Przybytek,V. I. Gavrilenko,F. Teppe,T. Dietl,W. Knap###
(1734611, 1734611)
HgTe quantum wells for QHE metrology under soft cryomagnetic conditions permanent magnets and liquid 4He temperatures.
Featurization terminated normally.
0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[265.0, 0.82, 'T', 3]

HgTe
###HgTe quantum wells for QHE metrology under soft cryomagnetic conditions: permanent magnets and liquid ${^4He}$ temperatures|I. Yahniuk,A. Kazakov,B. Jouault,S. S. Krishtopenko,S. Kret,G. Grabecki,G. Cywiński,N. N. Mikhailov,S. A. Dvoretskii,J. Przybytek,V. I. Gavrilenko,F. Teppe,T. Dietl,W. Knap###
(1734616, 1734617)
 HgTe quantum wells with a thickness of sim7 nm may have a graphene-likeband structure and have been recently proposed to be potential candidates forquantum Hall effect (QHE) resistance standards under the condition of operationin the fields above certain critical field Bc<missing VAR>, above which the topologicalphase (with parasitic edge conduction) disappears.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[259.0, 0.82, 'T', 2]

B
###HgTe quantum wells for QHE metrology under soft cryomagnetic conditions: permanent magnets and liquid ${^4He}$ temperatures|I. Yahniuk,A. Kazakov,B. Jouault,S. S. Krishtopenko,S. Kret,G. Grabecki,G. Cywiński,N. N. Mikhailov,S. A. Dvoretskii,J. Przybytek,V. I. Gavrilenko,F. Teppe,T. Dietl,W. Knap###
(1734713, 1734713)
 HgTe quantum wells with a thickness of sim7 nm may have a graphene-likeband structure and have been recently proposed to be potential candidates forquantum Hall effect (QHE) resistance standards under the condition of operationin the fields above certain critical field Bc<missing VAR>, above which the topologicalphase (with parasitic edge conduction) disappears.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 0.82, 'T', 2]

HgTe
###HgTe quantum wells for QHE metrology under soft cryomagnetic conditions: permanent magnets and liquid ${^4He}$ temperatures|I. Yahniuk,A. Kazakov,B. Jouault,S. S. Krishtopenko,S. Kret,G. Grabecki,G. Cywiński,N. N. Mikhailov,S. A. Dvoretskii,J. Przybytek,V. I. Gavrilenko,F. Teppe,T. Dietl,W. Knap###
(1734762, 1734763)
 We present experimentalstudies of the magnetoresistance of different of HgTe quantum wells as afunction temperature and magnetic field, determining the critical magneticfield Bc<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 0.82, 'T', 1]

B
###HgTe quantum wells for QHE metrology under soft cryomagnetic conditions: permanent magnets and liquid ${^4He}$ temperatures|I. Yahniuk,A. Kazakov,B. Jouault,S. S. Krishtopenko,S. Kret,G. Grabecki,G. Cywiński,N. N. Mikhailov,S. A. Dvoretskii,J. Przybytek,V. I. Gavrilenko,F. Teppe,T. Dietl,W. Knap###
(1734796, 1734796)
 We present experimentalstudies of the magnetoresistance of different of HgTe quantum wells as afunction temperature and magnetic field, determining the critical magneticfield Bc<missing VAR>.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 0.82, 'T', 1]

B
###HgTe quantum wells for QHE metrology under soft cryomagnetic conditions: permanent magnets and liquid ${^4He}$ temperatures|I. Yahniuk,A. Kazakov,B. Jouault,S. S. Krishtopenko,S. Kret,G. Grabecki,G. Cywiński,N. N. Mikhailov,S. A. Dvoretskii,J. Przybytek,V. I. Gavrilenko,F. Teppe,T. Dietl,W. Knap###
(1734817, 1734817)
 We demonstrate that for Q<missing VAR>Ws of specific width Bc<missing VAR> becomes lowenough to grant observation of remarkably wide QHE plateaus at the fillingfactor v<missing VAR>-1 (holes) in relaxed cryomagnetic conditions while usingcommercial 0.82 T Neodymium permanent magnets and temperature of a few Kelvinprovided by 4He liquid system only.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 0.82, 'T', 0]

He
###HgTe quantum wells for QHE metrology under soft cryomagnetic conditions: permanent magnets and liquid ${^4He}$ temperatures|I. Yahniuk,A. Kazakov,B. Jouault,S. S. Krishtopenko,S. Kret,G. Grabecki,G. Cywiński,N. N. Mikhailov,S. A. Dvoretskii,J. Przybytek,V. I. Gavrilenko,F. Teppe,T. Dietl,W. Knap###
(1734902, 1734902)
 We demonstrate that for Q<missing VAR>Ws of specific width Bc<missing VAR> becomes lowenough to grant observation of remarkably wide QHE plateaus at the fillingfactor v<missing VAR>-1 (holes) in relaxed cryomagnetic conditions while usingcommercial 0.82 T Neodymium permanent magnets and temperature of a few Kelvinprovided by 4He liquid system only.
Featurization terminated normally.
0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 0.82, 'T', 0]

HgTe
###HgTe quantum wells for QHE metrology under soft cryomagnetic conditions: permanent magnets and liquid ${^4He}$ temperatures|I. Yahniuk,A. Kazakov,B. Jouault,S. S. Krishtopenko,S. Kret,G. Grabecki,G. Cywiński,N. N. Mikhailov,S. A. Dvoretskii,J. Przybytek,V. I. Gavrilenko,F. Teppe,T. Dietl,W. Knap###
(1734997, 1734998)
 Ourwork clearly shows that the peculiar band structure properties of HgTe Q<missing VAR>Ws withmassless Dirac fermions make them an ideal platform for developing metrologicaldevices with relaxed cryomagnetic conditions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 0.82, 'T', 2]

TaCo2Te2
###TaCo$_{2}$Te$_{2}$: An air-stable, magnetic van der Waals material with high mobility|Ratnadwip Singha,Fang Yuan,Guangming Cheng,Tyger H. Salters,Yuzki M. Oey,Graciela V. Villalpando,Milena Jovanovic,Nan Yao,Leslie M. Schoop###
(1735463, 1735467)
TaCo2Te2 An air-stable, magnetic van der Waals material with high mobility.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[221.0, 2, 'D', 5]

W
###TaCo$_{2}$Te$_{2}$: An air-stable, magnetic van der Waals material with high mobility|Ratnadwip Singha,Fang Yuan,Guangming Cheng,Tyger H. Salters,Yuzki M. Oey,Graciela V. Villalpando,Milena Jovanovic,Nan Yao,Leslie M. Schoop###
(1735501, 1735501)
 Van der Waals (vdW) materials are an indispensable part of functional devicetechnology due to their versatile physical properties and ease of exfoliatingto the low-dimensional limit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[187.0, 2, 'D', 4]

W
###TaCo$_{2}$Te$_{2}$: An air-stable, magnetic van der Waals material with high mobility|Ratnadwip Singha,Fang Yuan,Guangming Cheng,Tyger H. Salters,Yuzki M. Oey,Graciela V. Villalpando,Milena Jovanovic,Nan Yao,Leslie M. Schoop###
(1735580, 1735580)
 Among all the compounds investigated so far, thesearch for magnetic vdW materials has intensified in recent years, fueled bythe realization of magnetism in two dimensions (2D).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 2, 'D', 3]

W
###TaCo$_{2}$Te$_{2}$: An air-stable, magnetic van der Waals material with high mobility|Ratnadwip Singha,Fang Yuan,Guangming Cheng,Tyger H. Salters,Yuzki M. Oey,Graciela V. Villalpando,Milena Jovanovic,Nan Yao,Leslie M. Schoop###
(1735629, 1735629)
 However, metallic magneticvdW systems are still uncommon.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 2, 'D', 2]

In
###TaCo$_{2}$Te$_{2}$: An air-stable, magnetic van der Waals material with high mobility|Ratnadwip Singha,Fang Yuan,Guangming Cheng,Tyger H. Salters,Yuzki M. Oey,Graciela V. Villalpando,Milena Jovanovic,Nan Yao,Leslie M. Schoop###
(1735640, 1735640)
 In addition, they rarely host high-mobilitycharge carriers, which is an essential requirement for high-speed electronicapplications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 2, 'D', 1]

TaCo2Te2
###TaCo$_{2}$Te$_{2}$: An air-stable, magnetic van der Waals material with high mobility|Ratnadwip Singha,Fang Yuan,Guangming Cheng,Tyger H. Salters,Yuzki M. Oey,Graciela V. Villalpando,Milena Jovanovic,Nan Yao,Leslie M. Schoop###
(1735719, 1735723)
 Using chemical reasoning, we introduce TaCo2Te2 as an air-stable,high-mobility, magnetic vdW material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 2, 'D', 1]

W
###TaCo$_{2}$Te$_{2}$: An air-stable, magnetic van der Waals material with high mobility|Ratnadwip Singha,Fang Yuan,Guangming Cheng,Tyger H. Salters,Yuzki M. Oey,Graciela V. Villalpando,Milena Jovanovic,Nan Yao,Leslie M. Schoop###
(1735743, 1735743)
 Using chemical reasoning, we introduce TaCo2Te2 as an air-stable,high-mobility, magnetic vdW material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 2, 'D', 1]

Co
###TaCo$_{2}$Te$_{2}$: An air-stable, magnetic van der Waals material with high mobility|Ratnadwip Singha,Fang Yuan,Guangming Cheng,Tyger H. Salters,Yuzki M. Oey,Graciela V. Villalpando,Milena Jovanovic,Nan Yao,Leslie M. Schoop###
(1735770, 1735770)
 It has a layered structure, whichconsists of Peierls distorted Co chains and a large vdW gap between the layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 2, 'D', 2]

W
###TaCo$_{2}$Te$_{2}$: An air-stable, magnetic van der Waals material with high mobility|Ratnadwip Singha,Fang Yuan,Guangming Cheng,Tyger H. Salters,Yuzki M. Oey,Graciela V. Villalpando,Milena Jovanovic,Nan Yao,Leslie M. Schoop###
(1735781, 1735781)
 It has a layered structure, whichconsists of Peierls distorted Co chains and a large vdW gap between the layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 2, 'D', 2]

TaCo2Te2
###TaCo$_{2}$Te$_{2}$: An air-stable, magnetic van der Waals material with high mobility|Ratnadwip Singha,Fang Yuan,Guangming Cheng,Tyger H. Salters,Yuzki M. Oey,Graciela V. Villalpando,Milena Jovanovic,Nan Yao,Leslie M. Schoop###
(1735878, 1735882)
 TaCo2Te2 shows a metallic character and a large,non-saturating, anisotropic magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[190.0, 2, 'D', 5]

CoFeVSb
###CoFeVSb: A Promising Candidate for Spin Valve and Thermoelectric Applications|Jadupati Nag,Deepika Rani,Durgesh Singh,R. Venkatesh,Bhawna Sahni,A. K. Yadav,S. N. Jha,D. Bhattacharyya,P. D. Babu,K. G. Suresh,Aftab Alam###
(1735967, 1735970)
CoFeVSb A Promising Candidate for Spin Valve and Thermoelectric Applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[256.0, 300, 'K', 6]

CoFeVSb
###CoFeVSb: A Promising Candidate for Spin Valve and Thermoelectric Applications|Jadupati Nag,Deepika Rani,Durgesh Singh,R. Venkatesh,Bhawna Sahni,A. K. Yadav,S. N. Jha,D. Bhattacharyya,P. D. Babu,K. G. Suresh,Aftab Alam###
(1736020, 1736023)
 We report a combined theoretical and experimental study of a novel quaternaryHeusler system CoFeVSb from the view point of room temperature spintronics andthermoelectric applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[203.0, 300, 'K', 5]

O3
###CoFeVSb: A Promising Candidate for Spin Valve and Thermoelectric Applications|Jadupati Nag,Deepika Rani,Durgesh Singh,R. Venkatesh,Bhawna Sahni,A. K. Yadav,S. N. Jha,D. Bhattacharyya,P. D. Babu,K. G. Suresh,Aftab Alam###
(1736065, 1736066)
 It crystallizes in cubic structure with smallD<missing VAR>O3-type disorder.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 300, 'K', 4]

S
###CoFeVSb: A Promising Candidate for Spin Valve and Thermoelectric Applications|Jadupati Nag,Deepika Rani,Durgesh Singh,R. Venkatesh,Bhawna Sahni,A. K. Yadav,S. N. Jha,D. Bhattacharyya,P. D. Babu,K. G. Suresh,Aftab Alam###
(1736125, 1736125)
 The presence of disorder is confirmed by room temperaturesynchrotron X<missing VAR>-ray diffraction(XRD) and extended X<missing VAR>-ray absorption fine structure(EXAFS) measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 300, 'K', 3]

B
###CoFeVSb: A Promising Candidate for Spin Valve and Thermoelectric Applications|Jadupati Nag,Deepika Rani,Durgesh Singh,R. Venkatesh,Bhawna Sahni,A. K. Yadav,S. N. Jha,D. Bhattacharyya,P. D. Babu,K. G. Suresh,Aftab Alam###
(1736157, 1736157)
 Magnetization data reveal high ordering temperature witha saturation magnetization of 2.2 muB/f.u.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 300, 'K', 2]

K2
###CoFeVSb: A Promising Candidate for Spin Valve and Thermoelectric Applications|Jadupati Nag,Deepika Rani,Durgesh Singh,R. Venkatesh,Bhawna Sahni,A. K. Yadav,S. N. Jha,D. Bhattacharyya,P. D. Babu,K. G. Suresh,Aftab Alam###
(1736281, 1736282)
 This compound also largeroom temperature power factor (sim0.62 m<missing VAR>Watt/m<missing VAR>/K2) and ultra lowlattice thermal conductivity (sim0.4 W/m<missing VAR>/K), making it a promising candidatefor thermoelectric application.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 300, 'K', 2]

W
###CoFeVSb: A Promising Candidate for Spin Valve and Thermoelectric Applications|Jadupati Nag,Deepika Rani,Durgesh Singh,R. Venkatesh,Bhawna Sahni,A. K. Yadav,S. N. Jha,D. Bhattacharyya,P. D. Babu,K. G. Suresh,Aftab Alam###
(1736302, 1736302)
 This compound also largeroom temperature power factor (sim0.62 m<missing VAR>Watt/m<missing VAR>/K2) and ultra lowlattice thermal conductivity (sim0.4 W/m<missing VAR>/K), making it a promising candidatefor thermoelectric application.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 300, 'K', 2]

K
###CoFeVSb: A Promising Candidate for Spin Valve and Thermoelectric Applications|Jadupati Nag,Deepika Rani,Durgesh Singh,R. Venkatesh,Bhawna Sahni,A. K. Yadav,S. N. Jha,D. Bhattacharyya,P. D. Babu,K. G. Suresh,Aftab Alam###
(1736306, 1736306)
 This compound also largeroom temperature power factor (sim0.62 m<missing VAR>Watt/m<missing VAR>/K2) and ultra lowlattice thermal conductivity (sim0.4 W/m<missing VAR>/K), making it a promising candidatefor thermoelectric application.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 300, 'K', 2]

O3
###CoFeVSb: A Promising Candidate for Spin Valve and Thermoelectric Applications|Jadupati Nag,Deepika Rani,Durgesh Singh,R. Venkatesh,Bhawna Sahni,A. K. Yadav,S. N. Jha,D. Bhattacharyya,P. D. Babu,K. G. Suresh,Aftab Alam###
(1736369, 1736370)
 Ab-initio calculations suggest weakhalf-metallic behavior and reduced magnetization (in agreement with experiment)in presence of D<missing VAR>O3 disorder.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 300, 'K', 3]

F
###CoFeVSb: A Promising Candidate for Spin Valve and Thermoelectric Applications|Jadupati Nag,Deepika Rani,Durgesh Singh,R. Venkatesh,Bhawna Sahni,A. K. Yadav,S. N. Jha,D. Bhattacharyya,P. D. Babu,K. G. Suresh,Aftab Alam###
(1736392, 1736392)
 We have also found an energetically competingferromagnetic FM)/antiferromagnetic (AFM) interface structure within anotherwise FM<missing VAR> matrix one of the prerequisites for spin valve behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 300, 'K', 4]

F
###CoFeVSb: A Promising Candidate for Spin Valve and Thermoelectric Applications|Jadupati Nag,Deepika Rani,Durgesh Singh,R. Venkatesh,Bhawna Sahni,A. K. Yadav,S. N. Jha,D. Bhattacharyya,P. D. Babu,K. G. Suresh,Aftab Alam###
(1736400, 1736400)
 We have also found an energetically competingferromagnetic FM)/antiferromagnetic (AFM) interface structure within anotherwise FM<missing VAR> matrix one of the prerequisites for spin valve behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[174.0, 300, 'K', 4]

F
###CoFeVSb: A Promising Candidate for Spin Valve and Thermoelectric Applications|Jadupati Nag,Deepika Rani,Durgesh Singh,R. Venkatesh,Bhawna Sahni,A. K. Yadav,S. N. Jha,D. Bhattacharyya,P. D. Babu,K. G. Suresh,Aftab Alam###
(1736415, 1736415)
 We have also found an energetically competingferromagnetic FM)/antiferromagnetic (AFM) interface structure within anotherwise FM<missing VAR> matrix one of the prerequisites for spin valve behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[189.0, 300, 'K', 4]

CoFeVSb
###CoFeVSb: A Promising Candidate for Spin Valve and Thermoelectric Applications|Jadupati Nag,Deepika Rani,Durgesh Singh,R. Venkatesh,Bhawna Sahni,A. K. Yadav,S. N. Jha,D. Bhattacharyya,P. D. Babu,K. G. Suresh,Aftab Alam###
(1736468, 1736471)
Coexistence of so many promising features in a single system is rare, and henceCoFeVSb gives a fertile platform to explore numerous applications in future.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[242.0, 300, 'K', 5]

W
###Modification of unconventional Hall effect with doping at the non-magnetic site in a 2D van der Waals ferromagnet|Rajeswari Roy Chowdhury,Chandan Patra,Samik DuttaGupta,Sayooj Satheesh,Shovan Dan,Shunsuke Fukami,Ravi Prakash Singh###
(1736557, 1736557)
 Two-dimensional (2D) van der Waals (vdW) magnetic materials have garneredconsiderable attention owing to the existence of magnetic order down to atomicdimensions and flexibility towards interface engineering, offering anattractive platform to explore novel spintronic phenomena and functionalities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 2, 'D', 1],[107.0, 2, 'D', 1],[462.0, 2, 'D', 6]

W
###Modification of unconventional Hall effect with doping at the non-magnetic site in a 2D van der Waals ferromagnet|Rajeswari Roy Chowdhury,Chandan Patra,Samik DuttaGupta,Sayooj Satheesh,Shovan Dan,Shunsuke Fukami,Ravi Prakash Singh###
(1736667, 1736667)
Understanding of the magnetoresistive properties and their correlation to theunderlying magnetic configurations is essential for 2D vdW-based spintronic orquantum information devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 2, 'D', 2],[3.0, 2, 'D', 0],[352.0, 2, 'D', 5]

W
###Modification of unconventional Hall effect with doping at the non-magnetic site in a 2D van der Waals ferromagnet|Rajeswari Roy Chowdhury,Chandan Patra,Samik DuttaGupta,Sayooj Satheesh,Shovan Dan,Shunsuke Fukami,Ravi Prakash Singh###
(1736693, 1736693)
 Among the promising candidates, vdW ferromagnet(FM) Fe3GeTe2 shows an unusual magnetotransport behavior, tunable by doping atthe magnetic (Fe) site, and tentatively arising from complicated underlyingspin texture configurations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 2, 'D', 3],[29.0, 2, 'D', 1],[326.0, 2, 'D', 4]

F
###Modification of unconventional Hall effect with doping at the non-magnetic site in a 2D van der Waals ferromagnet|Rajeswari Roy Chowdhury,Chandan Patra,Samik DuttaGupta,Sayooj Satheesh,Shovan Dan,Shunsuke Fukami,Ravi Prakash Singh###
(1736699, 1736699)
 Among the promising candidates, vdW ferromagnet(FM) Fe3GeTe2 shows an unusual magnetotransport behavior, tunable by doping atthe magnetic (Fe) site, and tentatively arising from complicated underlyingspin texture configurations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[170.0, 2, 'D', 3],[35.0, 2, 'D', 1],[320.0, 2, 'D', 4]

Fe3GeTe2
###Modification of unconventional Hall effect with doping at the non-magnetic site in a 2D van der Waals ferromagnet|Rajeswari Roy Chowdhury,Chandan Patra,Samik DuttaGupta,Sayooj Satheesh,Shovan Dan,Shunsuke Fukami,Ravi Prakash Singh###
(1736703, 1736707)
 Among the promising candidates, vdW ferromagnet(FM) Fe3GeTe2 shows an unusual magnetotransport behavior, tunable by doping atthe magnetic (Fe) site, and tentatively arising from complicated underlyingspin texture configurations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[174.0, 2, 'D', 3],[39.0, 2, 'D', 1],[312.0, 2, 'D', 4]

(Fe)
###Modification of unconventional Hall effect with doping at the non-magnetic site in a 2D van der Waals ferromagnet|Rajeswari Roy Chowdhury,Chandan Patra,Samik DuttaGupta,Sayooj Satheesh,Shovan Dan,Shunsuke Fukami,Ravi Prakash Singh###
(1736733, 1736735)
 Among the promising candidates, vdW ferromagnet(FM) Fe3GeTe2 shows an unusual magnetotransport behavior, tunable by doping atthe magnetic (Fe) site, and tentatively arising from complicated underlyingspin texture configurations.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[204.0, 2, 'D', 3],[69.0, 2, 'D', 1],[284.0, 2, 'D', 4]

W
###Modification of unconventional Hall effect with doping at the non-magnetic site in a 2D van der Waals ferromagnet|Rajeswari Roy Chowdhury,Chandan Patra,Samik DuttaGupta,Sayooj Satheesh,Shovan Dan,Shunsuke Fukami,Ravi Prakash Singh###
(1736789, 1736789)
 Here, we explore an alternative route towardsmanipulation of magnetotransport properties of a vdW FM<missing VAR> without directlyaffecting the magnetic site i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[260.0, 2, 'D', 4],[125.0, 2, 'D', 2],[230.0, 2, 'D', 3]

F
###Modification of unconventional Hall effect with doping at the non-magnetic site in a 2D van der Waals ferromagnet|Rajeswari Roy Chowdhury,Chandan Patra,Samik DuttaGupta,Sayooj Satheesh,Shovan Dan,Shunsuke Fukami,Ravi Prakash Singh###
(1736791, 1736791)
 Here, we explore an alternative route towardsmanipulation of magnetotransport properties of a vdW FM<missing VAR> without directlyaffecting the magnetic site i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[262.0, 2, 'D', 4],[127.0, 2, 'D', 2],[228.0, 2, 'D', 3]

(Ge)
###Modification of unconventional Hall effect with doping at the non-magnetic site in a 2D van der Waals ferromagnet|Rajeswari Roy Chowdhury,Chandan Patra,Samik DuttaGupta,Sayooj Satheesh,Shovan Dan,Shunsuke Fukami,Ravi Prakash Singh###
(1736825, 1736827)
, by doping at the non-magnetic (Ge) site ofFe3(Ge,As)Te2.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[296.0, 2, 'D', 5],[161.0, 2, 'D', 3],[192.0, 2, 'D', 2]

Fe3
###Modification of unconventional Hall effect with doping at the non-magnetic site in a 2D van der Waals ferromagnet|Rajeswari Roy Chowdhury,Chandan Patra,Samik DuttaGupta,Sayooj Satheesh,Shovan Dan,Shunsuke Fukami,Ravi Prakash Singh###
(1736834, 1736835)
, by doping at the non-magnetic (Ge) site ofFe3(Ge,As)Te2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[305.0, 2, 'D', 5],[170.0, 2, 'D', 3],[184.0, 2, 'D', 2]

Ge
###Modification of unconventional Hall effect with doping at the non-magnetic site in a 2D van der Waals ferromagnet|Rajeswari Roy Chowdhury,Chandan Patra,Samik DuttaGupta,Sayooj Satheesh,Shovan Dan,Shunsuke Fukami,Ravi Prakash Singh###
(1736837, 1736837)
, by doping at the non-magnetic (Ge) site ofFe3(Ge,As)Te2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[308.0, 2, 'D', 5],[173.0, 2, 'D', 3],[182.0, 2, 'D', 2]

As
###Modification of unconventional Hall effect with doping at the non-magnetic site in a 2D van der Waals ferromagnet|Rajeswari Roy Chowdhury,Chandan Patra,Samik DuttaGupta,Sayooj Satheesh,Shovan Dan,Shunsuke Fukami,Ravi Prakash Singh###
(1736839, 1736839)
, by doping at the non-magnetic (Ge) site ofFe3(Ge,As)Te2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[310.0, 2, 'D', 5],[175.0, 2, 'D', 3],[180.0, 2, 'D', 2]

Te2
###Modification of unconventional Hall effect with doping at the non-magnetic site in a 2D van der Waals ferromagnet|Rajeswari Roy Chowdhury,Chandan Patra,Samik DuttaGupta,Sayooj Satheesh,Shovan Dan,Shunsuke Fukami,Ravi Prakash Singh###
(1736841, 1736842)
, by doping at the non-magnetic (Ge) site ofFe3(Ge,As)Te2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[312.0, 2, 'D', 5],[177.0, 2, 'D', 3],[177.0, 2, 'D', 2]

(Ge)
###Modification of unconventional Hall effect with doping at the non-magnetic site in a 2D van der Waals ferromagnet|Rajeswari Roy Chowdhury,Chandan Patra,Samik DuttaGupta,Sayooj Satheesh,Shovan Dan,Shunsuke Fukami,Ravi Prakash Singh###
(1736858, 1736860)
 Interestingly, doping at the non-magnetic (Ge) site results inan unconventional Hall effect whose strength was considerably modified byincreasing As concentration, possibly arising from emergent electromagneticbehavior from underlying complicated spin configurations.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[329.0, 2, 'D', 6],[194.0, 2, 'D', 4],[159.0, 2, 'D', 1]

As
###Modification of unconventional Hall effect with doping at the non-magnetic site in a 2D van der Waals ferromagnet|Rajeswari Roy Chowdhury,Chandan Patra,Samik DuttaGupta,Sayooj Satheesh,Shovan Dan,Shunsuke Fukami,Ravi Prakash Singh###
(1736892, 1736892)
 Interestingly, doping at the non-magnetic (Ge) site results inan unconventional Hall effect whose strength was considerably modified byincreasing As concentration, possibly arising from emergent electromagneticbehavior from underlying complicated spin configurations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[363.0, 2, 'D', 6],[228.0, 2, 'D', 4],[127.0, 2, 'D', 1]

(Ge)
###Modification of unconventional Hall effect with doping at the non-magnetic site in a 2D van der Waals ferromagnet|Rajeswari Roy Chowdhury,Chandan Patra,Samik DuttaGupta,Sayooj Satheesh,Shovan Dan,Shunsuke Fukami,Ravi Prakash Singh###
(1736957, 1736959)
 The present resultsprovide a possible route to understand the intricate role played by thenon-magnetic (Ge) atom towards magnetic properties of vdW FMs, and shows anovel direction towards tailoring of underlying interactions responsible forthe stabilization of non trivial spin textures in 2D magnetic vdW materials.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[428.0, 2, 'D', 7],[293.0, 2, 'D', 5],[60.0, 2, 'D', 0]

W
###Modification of unconventional Hall effect with doping at the non-magnetic site in a 2D van der Waals ferromagnet|Rajeswari Roy Chowdhury,Chandan Patra,Samik DuttaGupta,Sayooj Satheesh,Shovan Dan,Shunsuke Fukami,Ravi Prakash Singh###
(1736972, 1736972)
 The present resultsprovide a possible route to understand the intricate role played by thenon-magnetic (Ge) atom towards magnetic properties of vdW FMs, and shows anovel direction towards tailoring of underlying interactions responsible forthe stabilization of non trivial spin textures in 2D magnetic vdW materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[443.0, 2, 'D', 7],[308.0, 2, 'D', 5],[47.0, 2, 'D', 0]

F
###Modification of unconventional Hall effect with doping at the non-magnetic site in a 2D van der Waals ferromagnet|Rajeswari Roy Chowdhury,Chandan Patra,Samik DuttaGupta,Sayooj Satheesh,Shovan Dan,Shunsuke Fukami,Ravi Prakash Singh###
(1736974, 1736974)
 The present resultsprovide a possible route to understand the intricate role played by thenon-magnetic (Ge) atom towards magnetic properties of vdW FMs, and shows anovel direction towards tailoring of underlying interactions responsible forthe stabilization of non trivial spin textures in 2D magnetic vdW materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[445.0, 2, 'D', 7],[310.0, 2, 'D', 5],[45.0, 2, 'D', 0]

W
###Modification of unconventional Hall effect with doping at the non-magnetic site in a 2D van der Waals ferromagnet|Rajeswari Roy Chowdhury,Chandan Patra,Samik DuttaGupta,Sayooj Satheesh,Shovan Dan,Shunsuke Fukami,Ravi Prakash Singh###
(1737024, 1737024)
 The present resultsprovide a possible route to understand the intricate role played by thenon-magnetic (Ge) atom towards magnetic properties of vdW FMs, and shows anovel direction towards tailoring of underlying interactions responsible forthe stabilization of non trivial spin textures in 2D magnetic vdW materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[495.0, 2, 'D', 7],[360.0, 2, 'D', 5],[5.0, 2, 'D', 0]

F
###Tunneling Magnetoresistance in Noncollinear Antiferromagnetic Tunnel Junctions|Jianting Dong,Xinlu Li,Gautam Gurung,Meng Zhu,Peina Zhang,Fanxing Zheng,Evgeny Y. Tsymbal,Jia Zhang###
(1737056, 1737056)
 Antiferromagnetic (AFM) spintronics has emerged as a subfield of spintronicsdriven by the advantages of antiferromagnets producing no stray fields andexhibiting ultrafast magnetization dynamics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[231.0, 300, '%', 3]

F
###Tunneling Magnetoresistance in Noncollinear Antiferromagnetic Tunnel Junctions|Jianting Dong,Xinlu Li,Gautam Gurung,Meng Zhu,Peina Zhang,Fanxing Zheng,Evgeny Y. Tsymbal,Jia Zhang###
(1737123, 1737123)
 The efficient method to detect anAFM<missing VAR> order parameter, known as the Neel vector, by electric means is criticalto realize concepts of AFM<missing VAR> spintronics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 300, '%', 2]

N
###Tunneling Magnetoresistance in Noncollinear Antiferromagnetic Tunnel Junctions|Jianting Dong,Xinlu Li,Gautam Gurung,Meng Zhu,Peina Zhang,Fanxing Zheng,Evgeny Y. Tsymbal,Jia Zhang###
(1737137, 1737137)
 The efficient method to detect anAFM<missing VAR> order parameter, known as the Neel vector, by electric means is criticalto realize concepts of AFM<missing VAR> spintronics.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 300, '%', 2]

F
###Tunneling Magnetoresistance in Noncollinear Antiferromagnetic Tunnel Junctions|Jianting Dong,Xinlu Li,Gautam Gurung,Meng Zhu,Peina Zhang,Fanxing Zheng,Evgeny Y. Tsymbal,Jia Zhang###
(1737163, 1737163)
 The efficient method to detect anAFM<missing VAR> order parameter, known as the Neel vector, by electric means is criticalto realize concepts of AFM<missing VAR> spintronics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 300, '%', 2]

F
###Tunneling Magnetoresistance in Noncollinear Antiferromagnetic Tunnel Junctions|Jianting Dong,Xinlu Li,Gautam Gurung,Meng Zhu,Peina Zhang,Fanxing Zheng,Evgeny Y. Tsymbal,Jia Zhang###
(1737184, 1737184)
 Here, we demonstrate that non-collinearAFM<missing VAR> metals, such as Mn3Sn, exhibit a momentum dependent spin polarization whichcan be exploited in AFM<missing VAR> tunnel junctions to detect the Neel vector.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 300, '%', 1]

Mn3Sn
###Tunneling Magnetoresistance in Noncollinear Antiferromagnetic Tunnel Junctions|Jianting Dong,Xinlu Li,Gautam Gurung,Meng Zhu,Peina Zhang,Fanxing Zheng,Evgeny Y. Tsymbal,Jia Zhang###
(1737194, 1737196)
 Here, we demonstrate that non-collinearAFM<missing VAR> metals, such as Mn3Sn, exhibit a momentum dependent spin polarization whichcan be exploited in AFM<missing VAR> tunnel junctions to detect the Neel vector.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 300, '%', 1]

F
###Tunneling Magnetoresistance in Noncollinear Antiferromagnetic Tunnel Junctions|Jianting Dong,Xinlu Li,Gautam Gurung,Meng Zhu,Peina Zhang,Fanxing Zheng,Evgeny Y. Tsymbal,Jia Zhang###
(1737223, 1737223)
 Here, we demonstrate that non-collinearAFM<missing VAR> metals, such as Mn3Sn, exhibit a momentum dependent spin polarization whichcan be exploited in AFM<missing VAR> tunnel junctions to detect the Neel vector.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 300, '%', 1]

N
###Tunneling Magnetoresistance in Noncollinear Antiferromagnetic Tunnel Junctions|Jianting Dong,Xinlu Li,Gautam Gurung,Meng Zhu,Peina Zhang,Fanxing Zheng,Evgeny Y. Tsymbal,Jia Zhang###
(1737236, 1737236)
 Here, we demonstrate that non-collinearAFM<missing VAR> metals, such as Mn3Sn, exhibit a momentum dependent spin polarization whichcan be exploited in AFM<missing VAR> tunnel junctions to detect the Neel vector.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 300, '%', 1]

F
###Tunneling Magnetoresistance in Noncollinear Antiferromagnetic Tunnel Junctions|Jianting Dong,Xinlu Li,Gautam Gurung,Meng Zhu,Peina Zhang,Fanxing Zheng,Evgeny Y. Tsymbal,Jia Zhang###
(1737293, 1737293)
 Usingfirst-principles calculations based on density functional theory, we predict atunneling magnetoresistance (TMR) effect as high as 300% in AFM<missing VAR> tunneljunctions with Mn3Sn electrodes, where the junction resistance depends on therelative orientation of their Neel vectors and exhibits four non-volatileresistance states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 300, '%', 0]

Mn3Sn
###Tunneling Magnetoresistance in Noncollinear Antiferromagnetic Tunnel Junctions|Jianting Dong,Xinlu Li,Gautam Gurung,Meng Zhu,Peina Zhang,Fanxing Zheng,Evgeny Y. Tsymbal,Jia Zhang###
(1737303, 1737305)
 Usingfirst-principles calculations based on density functional theory, we predict atunneling magnetoresistance (TMR) effect as high as 300% in AFM<missing VAR> tunneljunctions with Mn3Sn electrodes, where the junction resistance depends on therelative orientation of their Neel vectors and exhibits four non-volatileresistance states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 300, '%', 0]

N
###Tunneling Magnetoresistance in Noncollinear Antiferromagnetic Tunnel Junctions|Jianting Dong,Xinlu Li,Gautam Gurung,Meng Zhu,Peina Zhang,Fanxing Zheng,Evgeny Y. Tsymbal,Jia Zhang###
(1737333, 1737333)
 Usingfirst-principles calculations based on density functional theory, we predict atunneling magnetoresistance (TMR) effect as high as 300% in AFM<missing VAR> tunneljunctions with Mn3Sn electrodes, where the junction resistance depends on therelative orientation of their Neel vectors and exhibits four non-volatileresistance states.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 300, '%', 0]

F
###Tunneling Magnetoresistance in Noncollinear Antiferromagnetic Tunnel Junctions|Jianting Dong,Xinlu Li,Gautam Gurung,Meng Zhu,Peina Zhang,Fanxing Zheng,Evgeny Y. Tsymbal,Jia Zhang###
(1737400, 1737400)
 We argue that the spin-split band structure and the relatedTMR effect can also be realized in other non-collinear AFM<missing VAR> metals like Mn3Ge,Mn3Ga, Mn3Pt, and Mn3GaN.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 300, '%', 1]

Mn3Ge
###Tunneling Magnetoresistance in Noncollinear Antiferromagnetic Tunnel Junctions|Jianting Dong,Xinlu Li,Gautam Gurung,Meng Zhu,Peina Zhang,Fanxing Zheng,Evgeny Y. Tsymbal,Jia Zhang###
(1737407, 1737409)
 We argue that the spin-split band structure and the relatedTMR effect can also be realized in other non-collinear AFM<missing VAR> metals like Mn3Ge,Mn3Ga, Mn3Pt, and Mn3GaN.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 300, '%', 1]

Mn3Ga
###Tunneling Magnetoresistance in Noncollinear Antiferromagnetic Tunnel Junctions|Jianting Dong,Xinlu Li,Gautam Gurung,Meng Zhu,Peina Zhang,Fanxing Zheng,Evgeny Y. Tsymbal,Jia Zhang###
(1737413, 1737415)
 We argue that the spin-split band structure and the relatedTMR effect can also be realized in other non-collinear AFM<missing VAR> metals like Mn3Ge,Mn3Ga, Mn3Pt, and Mn3GaN.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 300, '%', 1]

Mn3Pt
###Tunneling Magnetoresistance in Noncollinear Antiferromagnetic Tunnel Junctions|Jianting Dong,Xinlu Li,Gautam Gurung,Meng Zhu,Peina Zhang,Fanxing Zheng,Evgeny Y. Tsymbal,Jia Zhang###
(1737418, 1737420)
 We argue that the spin-split band structure and the relatedTMR effect can also be realized in other non-collinear AFM<missing VAR> metals like Mn3Ge,Mn3Ga, Mn3Pt, and Mn3GaN.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 300, '%', 1]

Mn3GaN
###Tunneling Magnetoresistance in Noncollinear Antiferromagnetic Tunnel Junctions|Jianting Dong,Xinlu Li,Gautam Gurung,Meng Zhu,Peina Zhang,Fanxing Zheng,Evgeny Y. Tsymbal,Jia Zhang###
(1737425, 1737428)
 We argue that the spin-split band structure and the relatedTMR effect can also be realized in other non-collinear AFM<missing VAR> metals like Mn3Ge,Mn3Ga, Mn3Pt, and Mn3GaN.
Featurization terminated normally.
0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 300, '%', 1]

N
###Tunneling Magnetoresistance in Noncollinear Antiferromagnetic Tunnel Junctions|Jianting Dong,Xinlu Li,Gautam Gurung,Meng Zhu,Peina Zhang,Fanxing Zheng,Evgeny Y. Tsymbal,Jia Zhang###
(1737450, 1737450)
 Our work provides a robust method for detecting theNeel vector in non-collinear antiferromagnets via the TMR effect, which maybe useful for their application in AFM<missing VAR> spintronic devices.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 300, '%', 2]

F
###Tunneling Magnetoresistance in Noncollinear Antiferromagnetic Tunnel Junctions|Jianting Dong,Xinlu Li,Gautam Gurung,Meng Zhu,Peina Zhang,Fanxing Zheng,Evgeny Y. Tsymbal,Jia Zhang###
(1737492, 1737492)
 Our work provides a robust method for detecting theNeel vector in non-collinear antiferromagnets via the TMR effect, which maybe useful for their application in AFM<missing VAR> spintronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, 300, '%', 2]

In1-x
###Gate-controlled proximity magnetoresistance in In1-xGaxAs/(Ga,Fe)Sb bilayer heterostructures|Kosuke Takiguchi,Kyosuke Okamura,Le Duc Anh,Masaaki Tanaka###
(1737518, 1737521)
Gate-controlled proximity magnetoresistance in In1-xGaxAs/(Ga,Fe)Sb bilayer heterostructures.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[334.0, 0, '%', 5],[338.0, 5, '%', 5],[342.0, 7.5, '%', 5],[349.0, 10, '%', 5]

Ga
###Gate-controlled proximity magnetoresistance in In1-xGaxAs/(Ga,Fe)Sb bilayer heterostructures|Kosuke Takiguchi,Kyosuke Okamura,Le Duc Anh,Masaaki Tanaka###
(1737526, 1737526)
Gate-controlled proximity magnetoresistance in In1-xGaxAs/(Ga,Fe)Sb bilayer heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[329.0, 0, '%', 5],[333.0, 5, '%', 5],[337.0, 7.5, '%', 5],[344.0, 10, '%', 5]

Fe
###Gate-controlled proximity magnetoresistance in In1-xGaxAs/(Ga,Fe)Sb bilayer heterostructures|Kosuke Takiguchi,Kyosuke Okamura,Le Duc Anh,Masaaki Tanaka###
(1737528, 1737528)
Gate-controlled proximity magnetoresistance in In1-xGaxAs/(Ga,Fe)Sb bilayer heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[327.0, 0, '%', 5],[331.0, 5, '%', 5],[335.0, 7.5, '%', 5],[342.0, 10, '%', 5]

Sb
###Gate-controlled proximity magnetoresistance in In1-xGaxAs/(Ga,Fe)Sb bilayer heterostructures|Kosuke Takiguchi,Kyosuke Okamura,Le Duc Anh,Masaaki Tanaka###
(1737530, 1737530)
Gate-controlled proximity magnetoresistance in In1-xGaxAs/(Ga,Fe)Sb bilayer heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[325.0, 0, '%', 5],[329.0, 5, '%', 5],[333.0, 7.5, '%', 5],[340.0, 10, '%', 5]

P
###Gate-controlled proximity magnetoresistance in In1-xGaxAs/(Ga,Fe)Sb bilayer heterostructures|Kosuke Takiguchi,Kyosuke Okamura,Le Duc Anh,Masaaki Tanaka###
(1737628, 1737628)
 Recently, our group found giant proximity magnetoresistance(PMR), which is caused by MPE at an interface between a non-magneticsemiconductor InAs quantum well (Q<missing VAR>W) layer and a ferromagnetic semiconductor(Ga,Fe)Sb layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[227.0, 0, '%', 3],[231.0, 5, '%', 3],[235.0, 7.5, '%', 3],[242.0, 10, '%', 3]

InAs
###Gate-controlled proximity magnetoresistance in In1-xGaxAs/(Ga,Fe)Sb bilayer heterostructures|Kosuke Takiguchi,Kyosuke Okamura,Le Duc Anh,Masaaki Tanaka###
(1737663, 1737664)
 Recently, our group found giant proximity magnetoresistance(PMR), which is caused by MPE at an interface between a non-magneticsemiconductor InAs quantum well (Q<missing VAR>W) layer and a ferromagnetic semiconductor(Ga,Fe)Sb layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[191.0, 0, '%', 3],[195.0, 5, '%', 3],[199.0, 7.5, '%', 3],[206.0, 10, '%', 3]

W
###Gate-controlled proximity magnetoresistance in In1-xGaxAs/(Ga,Fe)Sb bilayer heterostructures|Kosuke Takiguchi,Kyosuke Okamura,Le Duc Anh,Masaaki Tanaka###
(1737672, 1737672)
 Recently, our group found giant proximity magnetoresistance(PMR), which is caused by MPE at an interface between a non-magneticsemiconductor InAs quantum well (Q<missing VAR>W) layer and a ferromagnetic semiconductor(Ga,Fe)Sb layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[183.0, 0, '%', 3],[187.0, 5, '%', 3],[191.0, 7.5, '%', 3],[198.0, 10, '%', 3]

Ga
###Gate-controlled proximity magnetoresistance in In1-xGaxAs/(Ga,Fe)Sb bilayer heterostructures|Kosuke Takiguchi,Kyosuke Okamura,Le Duc Anh,Masaaki Tanaka###
(1737687, 1737687)
 Recently, our group found giant proximity magnetoresistance(PMR), which is caused by MPE at an interface between a non-magneticsemiconductor InAs quantum well (Q<missing VAR>W) layer and a ferromagnetic semiconductor(Ga,Fe)Sb layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[168.0, 0, '%', 3],[172.0, 5, '%', 3],[176.0, 7.5, '%', 3],[183.0, 10, '%', 3]

Fe
###Gate-controlled proximity magnetoresistance in In1-xGaxAs/(Ga,Fe)Sb bilayer heterostructures|Kosuke Takiguchi,Kyosuke Okamura,Le Duc Anh,Masaaki Tanaka###
(1737689, 1737689)
 Recently, our group found giant proximity magnetoresistance(PMR), which is caused by MPE at an interface between a non-magneticsemiconductor InAs quantum well (Q<missing VAR>W) layer and a ferromagnetic semiconductor(Ga,Fe)Sb layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 0, '%', 3],[170.0, 5, '%', 3],[174.0, 7.5, '%', 3],[181.0, 10, '%', 3]

Sb
###Gate-controlled proximity magnetoresistance in In1-xGaxAs/(Ga,Fe)Sb bilayer heterostructures|Kosuke Takiguchi,Kyosuke Okamura,Le Duc Anh,Masaaki Tanaka###
(1737691, 1737691)
 Recently, our group found giant proximity magnetoresistance(PMR), which is caused by MPE at an interface between a non-magneticsemiconductor InAs quantum well (Q<missing VAR>W) layer and a ferromagnetic semiconductor(Ga,Fe)Sb layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 0, '%', 3],[168.0, 5, '%', 3],[172.0, 7.5, '%', 3],[179.0, 10, '%', 3]

InAs
###Gate-controlled proximity magnetoresistance in In1-xGaxAs/(Ga,Fe)Sb bilayer heterostructures|Kosuke Takiguchi,Kyosuke Okamura,Le Duc Anh,Masaaki Tanaka###
(1737750, 1737751)
 The MPE in the non-magnetic semiconductor can be modulated byapplying a gate voltage and controlling the penetration of the electronwavefunction in the InAs Q<missing VAR>W into the neighboring insulating ferromagnetic(Ga,Fe)Sb layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 0, '%', 2],[108.0, 5, '%', 2],[112.0, 7.5, '%', 2],[119.0, 10, '%', 2]

W
###Gate-controlled proximity magnetoresistance in In1-xGaxAs/(Ga,Fe)Sb bilayer heterostructures|Kosuke Takiguchi,Kyosuke Okamura,Le Duc Anh,Masaaki Tanaka###
(1737754, 1737754)
 The MPE in the non-magnetic semiconductor can be modulated byapplying a gate voltage and controlling the penetration of the electronwavefunction in the InAs Q<missing VAR>W into the neighboring insulating ferromagnetic(Ga,Fe)Sb layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 0, '%', 2],[105.0, 5, '%', 2],[109.0, 7.5, '%', 2],[116.0, 10, '%', 2]

Ga
###Gate-controlled proximity magnetoresistance in In1-xGaxAs/(Ga,Fe)Sb bilayer heterostructures|Kosuke Takiguchi,Kyosuke Okamura,Le Duc Anh,Masaaki Tanaka###
(1737768, 1737768)
 The MPE in the non-magnetic semiconductor can be modulated byapplying a gate voltage and controlling the penetration of the electronwavefunction in the InAs Q<missing VAR>W into the neighboring insulating ferromagnetic(Ga,Fe)Sb layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 0, '%', 2],[91.0, 5, '%', 2],[95.0, 7.5, '%', 2],[102.0, 10, '%', 2]

Fe
###Gate-controlled proximity magnetoresistance in In1-xGaxAs/(Ga,Fe)Sb bilayer heterostructures|Kosuke Takiguchi,Kyosuke Okamura,Le Duc Anh,Masaaki Tanaka###
(1737770, 1737770)
 The MPE in the non-magnetic semiconductor can be modulated byapplying a gate voltage and controlling the penetration of the electronwavefunction in the InAs Q<missing VAR>W into the neighboring insulating ferromagnetic(Ga,Fe)Sb layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 0, '%', 2],[89.0, 5, '%', 2],[93.0, 7.5, '%', 2],[100.0, 10, '%', 2]

Sb
###Gate-controlled proximity magnetoresistance in In1-xGaxAs/(Ga,Fe)Sb bilayer heterostructures|Kosuke Takiguchi,Kyosuke Okamura,Le Duc Anh,Masaaki Tanaka###
(1737772, 1737772)
 The MPE in the non-magnetic semiconductor can be modulated byapplying a gate voltage and controlling the penetration of the electronwavefunction in the InAs Q<missing VAR>W into the neighboring insulating ferromagnetic(Ga,Fe)Sb layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 0, '%', 2],[87.0, 5, '%', 2],[91.0, 7.5, '%', 2],[98.0, 10, '%', 2]

Ga
###Gate-controlled proximity magnetoresistance in In1-xGaxAs/(Ga,Fe)Sb bilayer heterostructures|Kosuke Takiguchi,Kyosuke Okamura,Le Duc Anh,Masaaki Tanaka###
(1737803, 1737803)
 However, optimal conditions to obtain strong MPE at theInAs/(Ga,Fe)Sb interface have not been clarified.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 0, '%', 1],[56.0, 5, '%', 1],[60.0, 7.5, '%', 1],[67.0, 10, '%', 1]

Fe
###Gate-controlled proximity magnetoresistance in In1-xGaxAs/(Ga,Fe)Sb bilayer heterostructures|Kosuke Takiguchi,Kyosuke Okamura,Le Duc Anh,Masaaki Tanaka###
(1737805, 1737805)
 However, optimal conditions to obtain strong MPE at theInAs/(Ga,Fe)Sb interface have not been clarified.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 0, '%', 1],[54.0, 5, '%', 1],[58.0, 7.5, '%', 1],[65.0, 10, '%', 1]

Sb
###Gate-controlled proximity magnetoresistance in In1-xGaxAs/(Ga,Fe)Sb bilayer heterostructures|Kosuke Takiguchi,Kyosuke Okamura,Le Duc Anh,Masaaki Tanaka###
(1737807, 1737807)
 However, optimal conditions to obtain strong MPE at theInAs/(Ga,Fe)Sb interface have not been clarified.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 0, '%', 1],[52.0, 5, '%', 1],[56.0, 7.5, '%', 1],[63.0, 10, '%', 1]

In
###Gate-controlled proximity magnetoresistance in In1-xGaxAs/(Ga,Fe)Sb bilayer heterostructures|Kosuke Takiguchi,Kyosuke Okamura,Le Duc Anh,Masaaki Tanaka###
(1737820, 1737820)
 In this paper, wesystematically investigate the PMR properties of In1-xGaxAs (x<missing VAR>  0%, 5%, 7.5%,and 10%) / (Ga,Fe)Sb bilayer semiconductor heterostructures under a wide rangeof gate voltage.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 0, '%', 0],[39.0, 5, '%', 0],[43.0, 7.5, '%', 0],[50.0, 10, '%', 0]

P
###Gate-controlled proximity magnetoresistance in In1-xGaxAs/(Ga,Fe)Sb bilayer heterostructures|Kosuke Takiguchi,Kyosuke Okamura,Le Duc Anh,Masaaki Tanaka###
(1737836, 1737836)
 In this paper, wesystematically investigate the PMR properties of In1-xGaxAs (x<missing VAR>  0%, 5%, 7.5%,and 10%) / (Ga,Fe)Sb bilayer semiconductor heterostructures under a wide rangeof gate voltage.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 0, '%', 0],[23.0, 5, '%', 0],[27.0, 7.5, '%', 0],[34.0, 10, '%', 0]

In1-x
###Gate-controlled proximity magnetoresistance in In1-xGaxAs/(Ga,Fe)Sb bilayer heterostructures|Kosuke Takiguchi,Kyosuke Okamura,Le Duc Anh,Masaaki Tanaka###
(1737844, 1737847)
 In this paper, wesystematically investigate the PMR properties of In1-xGaxAs (x<missing VAR>  0%, 5%, 7.5%,and 10%) / (Ga,Fe)Sb bilayer semiconductor heterostructures under a wide rangeof gate voltage.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[8.0, 0, '%', 0],[12.0, 5, '%', 0],[16.0, 7.5, '%', 0],[23.0, 10, '%', 0]

As
###Gate-controlled proximity magnetoresistance in In1-xGaxAs/(Ga,Fe)Sb bilayer heterostructures|Kosuke Takiguchi,Kyosuke Okamura,Le Duc Anh,Masaaki Tanaka###
(1737849, 1737849)
 In this paper, wesystematically investigate the PMR properties of In1-xGaxAs (x<missing VAR>  0%, 5%, 7.5%,and 10%) / (Ga,Fe)Sb bilayer semiconductor heterostructures under a wide rangeof gate voltage.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 0, '%', 0],[10.0, 5, '%', 0],[14.0, 7.5, '%', 0],[21.0, 10, '%', 0]

Ga
###Gate-controlled proximity magnetoresistance in In1-xGaxAs/(Ga,Fe)Sb bilayer heterostructures|Kosuke Takiguchi,Kyosuke Okamura,Le Duc Anh,Masaaki Tanaka###
(1737877, 1737877)
 In this paper, wesystematically investigate the PMR properties of In1-xGaxAs (x<missing VAR>  0%, 5%, 7.5%,and 10%) / (Ga,Fe)Sb bilayer semiconductor heterostructures under a wide rangeof gate voltage.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 0, '%', 0],[18.0, 5, '%', 0],[14.0, 7.5, '%', 0],[7.0, 10, '%', 0]

Fe
###Gate-controlled proximity magnetoresistance in In1-xGaxAs/(Ga,Fe)Sb bilayer heterostructures|Kosuke Takiguchi,Kyosuke Okamura,Le Duc Anh,Masaaki Tanaka###
(1737879, 1737879)
 In this paper, wesystematically investigate the PMR properties of In1-xGaxAs (x<missing VAR>  0%, 5%, 7.5%,and 10%) / (Ga,Fe)Sb bilayer semiconductor heterostructures under a wide rangeof gate voltage.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 0, '%', 0],[20.0, 5, '%', 0],[16.0, 7.5, '%', 0],[9.0, 10, '%', 0]

Sb
###Gate-controlled proximity magnetoresistance in In1-xGaxAs/(Ga,Fe)Sb bilayer heterostructures|Kosuke Takiguchi,Kyosuke Okamura,Le Duc Anh,Masaaki Tanaka###
(1737881, 1737881)
 In this paper, wesystematically investigate the PMR properties of In1-xGaxAs (x<missing VAR>  0%, 5%, 7.5%,and 10%) / (Ga,Fe)Sb bilayer semiconductor heterostructures under a wide rangeof gate voltage.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 0, '%', 0],[22.0, 5, '%', 0],[18.0, 7.5, '%', 0],[11.0, 10, '%', 0]

Ga
###Gate-controlled proximity magnetoresistance in In1-xGaxAs/(Ga,Fe)Sb bilayer heterostructures|Kosuke Takiguchi,Kyosuke Okamura,Le Duc Anh,Masaaki Tanaka###
(1737911, 1737911)
 The inclusion of Ga alters the electronic structures of theInAs thin film, in particular changing the effective mass and the Q<missing VAR>W potentialof electron carriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 0, '%', 1],[52.0, 5, '%', 1],[48.0, 7.5, '%', 1],[41.0, 10, '%', 1]

InAs
###Gate-controlled proximity magnetoresistance in In1-xGaxAs/(Ga,Fe)Sb bilayer heterostructures|Kosuke Takiguchi,Kyosuke Okamura,Le Duc Anh,Masaaki Tanaka###
(1737926, 1737927)
 The inclusion of Ga alters the electronic structures of theInAs thin film, in particular changing the effective mass and the Q<missing VAR>W potentialof electron carriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 0, '%', 1],[67.0, 5, '%', 1],[63.0, 7.5, '%', 1],[56.0, 10, '%', 1]

W
###Gate-controlled proximity magnetoresistance in In1-xGaxAs/(Ga,Fe)Sb bilayer heterostructures|Kosuke Takiguchi,Kyosuke Okamura,Le Duc Anh,Masaaki Tanaka###
(1737951, 1737951)
 The inclusion of Ga alters the electronic structures of theInAs thin film, in particular changing the effective mass and the Q<missing VAR>W potentialof electron carriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 0, '%', 1],[92.0, 5, '%', 1],[88.0, 7.5, '%', 1],[81.0, 10, '%', 1]

P
###Gate-controlled proximity magnetoresistance in In1-xGaxAs/(Ga,Fe)Sb bilayer heterostructures|Kosuke Takiguchi,Kyosuke Okamura,Le Duc Anh,Masaaki Tanaka###
(1737980, 1737980)
 Our experimental results and theoretical analysis of thePMR in these In1-xGaxAs/(Ga,Fe)Sb heterostructures show that the MPE dependsnot only on the degree of penetration of the electron wavefunction into(Ga,Fe)Sb but also on the electron density.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 0, '%', 2],[121.0, 5, '%', 2],[117.0, 7.5, '%', 2],[110.0, 10, '%', 2]

In1-x
###Gate-controlled proximity magnetoresistance in In1-xGaxAs/(Ga,Fe)Sb bilayer heterostructures|Kosuke Takiguchi,Kyosuke Okamura,Le Duc Anh,Masaaki Tanaka###
(1737988, 1737991)
 Our experimental results and theoretical analysis of thePMR in these In1-xGaxAs/(Ga,Fe)Sb heterostructures show that the MPE dependsnot only on the degree of penetration of the electron wavefunction into(Ga,Fe)Sb but also on the electron density.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[133.0, 0, '%', 2],[129.0, 5, '%', 2],[125.0, 7.5, '%', 2],[118.0, 10, '%', 2]

Ga
###Gate-controlled proximity magnetoresistance in In1-xGaxAs/(Ga,Fe)Sb bilayer heterostructures|Kosuke Takiguchi,Kyosuke Okamura,Le Duc Anh,Masaaki Tanaka###
(1737996, 1737996)
 Our experimental results and theoretical analysis of thePMR in these In1-xGaxAs/(Ga,Fe)Sb heterostructures show that the MPE dependsnot only on the degree of penetration of the electron wavefunction into(Ga,Fe)Sb but also on the electron density.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 0, '%', 2],[137.0, 5, '%', 2],[133.0, 7.5, '%', 2],[126.0, 10, '%', 2]

Fe
###Gate-controlled proximity magnetoresistance in In1-xGaxAs/(Ga,Fe)Sb bilayer heterostructures|Kosuke Takiguchi,Kyosuke Okamura,Le Duc Anh,Masaaki Tanaka###
(1737998, 1737998)
 Our experimental results and theoretical analysis of thePMR in these In1-xGaxAs/(Ga,Fe)Sb heterostructures show that the MPE dependsnot only on the degree of penetration of the electron wavefunction into(Ga,Fe)Sb but also on the electron density.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 0, '%', 2],[139.0, 5, '%', 2],[135.0, 7.5, '%', 2],[128.0, 10, '%', 2]

Sb
###Gate-controlled proximity magnetoresistance in In1-xGaxAs/(Ga,Fe)Sb bilayer heterostructures|Kosuke Takiguchi,Kyosuke Okamura,Le Duc Anh,Masaaki Tanaka###
(1738000, 1738000)
 Our experimental results and theoretical analysis of thePMR in these In1-xGaxAs/(Ga,Fe)Sb heterostructures show that the MPE dependsnot only on the degree of penetration of the electron wavefunction into(Ga,Fe)Sb but also on the electron density.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 0, '%', 2],[141.0, 5, '%', 2],[137.0, 7.5, '%', 2],[130.0, 10, '%', 2]

Ga
###Gate-controlled proximity magnetoresistance in In1-xGaxAs/(Ga,Fe)Sb bilayer heterostructures|Kosuke Takiguchi,Kyosuke Okamura,Le Duc Anh,Masaaki Tanaka###
(1738043, 1738043)
 Our experimental results and theoretical analysis of thePMR in these In1-xGaxAs/(Ga,Fe)Sb heterostructures show that the MPE dependsnot only on the degree of penetration of the electron wavefunction into(Ga,Fe)Sb but also on the electron density.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 0, '%', 2],[184.0, 5, '%', 2],[180.0, 7.5, '%', 2],[173.0, 10, '%', 2]

Fe
###Gate-controlled proximity magnetoresistance in In1-xGaxAs/(Ga,Fe)Sb bilayer heterostructures|Kosuke Takiguchi,Kyosuke Okamura,Le Duc Anh,Masaaki Tanaka###
(1738045, 1738045)
 Our experimental results and theoretical analysis of thePMR in these In1-xGaxAs/(Ga,Fe)Sb heterostructures show that the MPE dependsnot only on the degree of penetration of the electron wavefunction into(Ga,Fe)Sb but also on the electron density.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[190.0, 0, '%', 2],[186.0, 5, '%', 2],[182.0, 7.5, '%', 2],[175.0, 10, '%', 2]

Sb
###Gate-controlled proximity magnetoresistance in In1-xGaxAs/(Ga,Fe)Sb bilayer heterostructures|Kosuke Takiguchi,Kyosuke Okamura,Le Duc Anh,Masaaki Tanaka###
(1738047, 1738047)
 Our experimental results and theoretical analysis of thePMR in these In1-xGaxAs/(Ga,Fe)Sb heterostructures show that the MPE dependsnot only on the degree of penetration of the electron wavefunction into(Ga,Fe)Sb but also on the electron density.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[192.0, 0, '%', 2],[188.0, 5, '%', 2],[184.0, 7.5, '%', 2],[177.0, 10, '%', 2]

V2O3/Ni
###Stress-tailoring magnetic anisotropy of V$_2$O$_3$/Ni bilayers|Christian T. Wolowiec,Juan Gabriel Ramírez,Min-Han Lee,Nicolas M. Vargas,Ali C. Basaran,Pavel Salev,Ivan K. Schuller###
(1738121, 1738126)
Stress-tailoring magnetic anisotropy of V2O3/Ni bilayers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[81.0, 160, 'K', 2]

V2O3/Ni
###Stress-tailoring magnetic anisotropy of V$_2$O$_3$/Ni bilayers|Christian T. Wolowiec,Juan Gabriel Ramírez,Min-Han Lee,Nicolas M. Vargas,Ali C. Basaran,Pavel Salev,Ivan K. Schuller###
(1738162, 1738167)
 We report on a temperature-driven reversible change of the in-plane magneticanisotropy of V2O3/Ni bilayers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[40.0, 160, 'K', 1]

V2O3
###Stress-tailoring magnetic anisotropy of V$_2$O$_3$/Ni bilayers|Christian T. Wolowiec,Juan Gabriel Ramírez,Min-Han Lee,Nicolas M. Vargas,Ali C. Basaran,Pavel Salev,Ivan K. Schuller###
(1738197, 1738200)
 This is caused by the rhombohedral tomonoclinic structural phase transition of V2O3 at T<missing VAR>C  160 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 160, 'K', 0]

C
###Stress-tailoring magnetic anisotropy of V$_2$O$_3$/Ni bilayers|Christian T. Wolowiec,Juan Gabriel Ramírez,Min-Han Lee,Nicolas M. Vargas,Ali C. Basaran,Pavel Salev,Ivan K. Schuller###
(1738205, 1738205)
 This is caused by the rhombohedral tomonoclinic structural phase transition of V2O3 at T<missing VAR>C  160 K.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 160, 'K', 0]

C
###Stress-tailoring magnetic anisotropy of V$_2$O$_3$/Ni bilayers|Christian T. Wolowiec,Juan Gabriel Ramírez,Min-Han Lee,Nicolas M. Vargas,Ali C. Basaran,Pavel Salev,Ivan K. Schuller###
(1738228, 1738228)
 Thein-plane magnetic anisotropy is uniaxial above T<missing VAR>C, but as the bilayer iscooled through the structural phase transition, a secondary magnetic easy axisemerges.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 160, 'K', 1]

V2O3/Ni
###Stress-tailoring magnetic anisotropy of V$_2$O$_3$/Ni bilayers|Christian T. Wolowiec,Juan Gabriel Ramírez,Min-Han Lee,Nicolas M. Vargas,Ali C. Basaran,Pavel Salev,Ivan K. Schuller###
(1738314, 1738319)
 We identify two structuralproperties of the V2O3/Ni bilayers affecting the in-plane magneticanisotropy (1) a growth-induced uniaxial magnetic anisotropy associated withstep-like terraces in the bilayer microstructure and (2) a low-temperaturestrain-induced biaxial anisotropy associated with the V2O3 structuralphase transition.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[107.0, 160, 'K', 3]

V2O3
###Stress-tailoring magnetic anisotropy of V$_2$O$_3$/Ni bilayers|Christian T. Wolowiec,Juan Gabriel Ramírez,Min-Han Lee,Nicolas M. Vargas,Ali C. Basaran,Pavel Salev,Ivan K. Schuller###
(1738398, 1738401)
 We identify two structuralproperties of the V2O3/Ni bilayers affecting the in-plane magneticanisotropy (1) a growth-induced uniaxial magnetic anisotropy associated withstep-like terraces in the bilayer microstructure and (2) a low-temperaturestrain-induced biaxial anisotropy associated with the V2O3 structuralphase transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[191.0, 160, 'K', 3]

Ni
###Stress-tailoring magnetic anisotropy of V$_2$O$_3$/Ni bilayers|Christian T. Wolowiec,Juan Gabriel Ramírez,Min-Han Lee,Nicolas M. Vargas,Ali C. Basaran,Pavel Salev,Ivan K. Schuller###
(1738451, 1738451)
 Magnetoresistance measurements corroborate the change inmagnetic anisotropy across the structural transition and suggest that thenegative magnetostriction of Ni leads to the emergence of a strain-inducedeasy-axis.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[244.0, 160, 'K', 4]

V2O3
###Stress-tailoring magnetic anisotropy of V$_2$O$_3$/Ni bilayers|Christian T. Wolowiec,Juan Gabriel Ramírez,Min-Han Lee,Nicolas M. Vargas,Ali C. Basaran,Pavel Salev,Ivan K. Schuller###
(1738494, 1738497)
 This shows that a temperature-dependent structural transition inV2O3 may be used to tune the magnetic anisotropy in an adjacentferromagnetic thin film.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[287.0, 160, 'K', 5]

Sr1-xFe12O19
###Tuning Ferroelectrics to Antiferroelectrics in Multiferroic LaxSr1-xFe12O19 Ceramics|Cong-Cong Duan,Guo-Long Tan###
(1738550, 1738557)
Tuning Ferroelectrics to Antiferroelectrics in Multiferroic LaxSr1-xFe12O19 Ceramics.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[152.0, 0, 'to', 2],[354.0, 14.3, 'J', 6],[389.0, 1.1, 'T', 8],[405.0, 0.95, 'uC', 8],[408.0, 2, ',', 8],[419.0, 117, '%', 8],[432.0, 540, '%', 8],[453.0, 208, 'kHz', 8]

F
###Tuning Ferroelectrics to Antiferroelectrics in Multiferroic LaxSr1-xFe12O19 Ceramics|Cong-Cong Duan,Guo-Long Tan###
(1738572, 1738572)
 The combination of antiferroelectricity (AFE) and ferromagnetism (FM) in onestructure would allow the development of new type of multiferroic candidates,which be applicable not only in magnetoelectric memories but also in novelenergy storage devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 0, 'to', 1],[339.0, 14.3, 'J', 5],[374.0, 1.1, 'T', 7],[390.0, 0.95, 'uC', 7],[393.0, 2, ',', 7],[404.0, 117, '%', 7],[417.0, 540, '%', 7],[438.0, 208, 'kHz', 7]

F
###Tuning Ferroelectrics to Antiferroelectrics in Multiferroic LaxSr1-xFe12O19 Ceramics|Cong-Cong Duan,Guo-Long Tan###
(1738581, 1738581)
 The combination of antiferroelectricity (AFE) and ferromagnetism (FM) in onestructure would allow the development of new type of multiferroic candidates,which be applicable not only in magnetoelectric memories but also in novelenergy storage devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 0, 'to', 1],[330.0, 14.3, 'J', 5],[365.0, 1.1, 'T', 7],[381.0, 0.95, 'uC', 7],[384.0, 2, ',', 7],[395.0, 117, '%', 7],[408.0, 540, '%', 7],[429.0, 208, 'kHz', 7]

Sr1-xFe12O19
###Tuning Ferroelectrics to Antiferroelectrics in Multiferroic LaxSr1-xFe12O19 Ceramics|Cong-Cong Duan,Guo-Long Tan###
(1738666, 1738673)
 Here we propose a novel type of multiferroic candidateLaxSr1-xFe12O19, whose room temperature state could betuned from ferroelectrics(FE) to antiferroelectrics by changing x<missing VAR> from 0 to 0.5.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[36.0, 0, 'to', 0],[238.0, 14.3, 'J', 4],[273.0, 1.1, 'T', 6],[289.0, 0.95, 'uC', 6],[292.0, 2, ',', 6],[303.0, 117, '%', 6],[316.0, 540, '%', 6],[337.0, 208, 'kHz', 6]

F
###Tuning Ferroelectrics to Antiferroelectrics in Multiferroic LaxSr1-xFe12O19 Ceramics|Cong-Cong Duan,Guo-Long Tan###
(1738694, 1738694)
 Here we propose a novel type of multiferroic candidateLaxSr1-xFe12O19, whose room temperature state could betuned from ferroelectrics(FE) to antiferroelectrics by changing x<missing VAR> from 0 to 0.5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 0, 'to', 0],[217.0, 14.3, 'J', 4],[252.0, 1.1, 'T', 6],[268.0, 0.95, 'uC', 6],[271.0, 2, ',', 6],[282.0, 117, '%', 6],[295.0, 540, '%', 6],[316.0, 208, 'kHz', 6]

La0.5Sr0.5Fe12O19
###Tuning Ferroelectrics to Antiferroelectrics in Multiferroic LaxSr1-xFe12O19 Ceramics|Cong-Cong Duan,Guo-Long Tan###
(1738735, 1738742)
 The emphasis of thispaper will be focused on the La0.5Sr0.5Fe12O19 system, in which full AFE<missing VAR> and FM<missing VAR>coexist.
Featurization terminated normally.
0,0,0,0,0,0,0,0.59375,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.375,0,0,0,0,0,0,0,0,0,0,0,0.015625,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.015625,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 0, 'to', 1],[169.0, 14.3, 'J', 3],[204.0, 1.1, 'T', 5],[220.0, 0.95, 'uC', 5],[223.0, 2, ',', 5],[234.0, 117, '%', 5],[247.0, 540, '%', 5],[268.0, 208, 'kHz', 5]

F
###Tuning Ferroelectrics to Antiferroelectrics in Multiferroic LaxSr1-xFe12O19 Ceramics|Cong-Cong Duan,Guo-Long Tan###
(1738754, 1738754)
 The emphasis of thispaper will be focused on the La0.5Sr0.5Fe12O19 system, in which full AFE<missing VAR> and FM<missing VAR>coexist.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 0, 'to', 1],[157.0, 14.3, 'J', 3],[192.0, 1.1, 'T', 5],[208.0, 0.95, 'uC', 5],[211.0, 2, ',', 5],[222.0, 117, '%', 5],[235.0, 540, '%', 5],[256.0, 208, 'kHz', 5]

F
###Tuning Ferroelectrics to Antiferroelectrics in Multiferroic LaxSr1-xFe12O19 Ceramics|Cong-Cong Duan,Guo-Long Tan###
(1738759, 1738759)
 The emphasis of thispaper will be focused on the La0.5Sr0.5Fe12O19 system, in which full AFE<missing VAR> and FM<missing VAR>coexist.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 0, 'to', 1],[152.0, 14.3, 'J', 3],[187.0, 1.1, 'T', 5],[203.0, 0.95, 'uC', 5],[206.0, 2, ',', 5],[217.0, 117, '%', 5],[230.0, 540, '%', 5],[251.0, 208, 'kHz', 5]

La0.5Sr0.5Fe12O19
###Tuning Ferroelectrics to Antiferroelectrics in Multiferroic LaxSr1-xFe12O19 Ceramics|Cong-Cong Duan,Guo-Long Tan###
(1738776, 1738783)
 The pure antiferroelectric behavior in La0.5Sr0.5Fe12O19 ceramics isdemonstrated by double polarization-electric field (P-E) hysteresis loops,which are fully separated by a linear antiferroelectric AFE<missing VAR> component with zeronet polarization.
Featurization terminated normally.
0,0,0,0,0,0,0,0.59375,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.375,0,0,0,0,0,0,0,0,0,0,0,0.015625,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.015625,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 0, 'to', 2],[128.0, 14.3, 'J', 2],[163.0, 1.1, 'T', 4],[179.0, 0.95, 'uC', 4],[182.0, 2, ',', 4],[193.0, 117, '%', 4],[206.0, 540, '%', 4],[227.0, 208, 'kHz', 4]

P
###Tuning Ferroelectrics to Antiferroelectrics in Multiferroic LaxSr1-xFe12O19 Ceramics|Cong-Cong Duan,Guo-Long Tan###
(1738803, 1738803)
 The pure antiferroelectric behavior in La0.5Sr0.5Fe12O19 ceramics isdemonstrated by double polarization-electric field (P-E) hysteresis loops,which are fully separated by a linear antiferroelectric AFE<missing VAR> component with zeronet polarization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 0, 'to', 2],[108.0, 14.3, 'J', 2],[143.0, 1.1, 'T', 4],[159.0, 0.95, 'uC', 4],[162.0, 2, ',', 4],[173.0, 117, '%', 4],[186.0, 540, '%', 4],[207.0, 208, 'kHz', 4]

F
###Tuning Ferroelectrics to Antiferroelectrics in Multiferroic LaxSr1-xFe12O19 Ceramics|Cong-Cong Duan,Guo-Long Tan###
(1738831, 1738831)
 The pure antiferroelectric behavior in La0.5Sr0.5Fe12O19 ceramics isdemonstrated by double polarization-electric field (P-E) hysteresis loops,which are fully separated by a linear antiferroelectric AFE<missing VAR> component with zeronet polarization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 0, 'to', 2],[80.0, 14.3, 'J', 2],[115.0, 1.1, 'T', 4],[131.0, 0.95, 'uC', 4],[134.0, 2, ',', 4],[145.0, 117, '%', 4],[158.0, 540, '%', 4],[179.0, 208, 'kHz', 4]

La0.2Sr0.7Fe12O19
###Tuning Ferroelectrics to Antiferroelectrics in Multiferroic LaxSr1-xFe12O19 Ceramics|Cong-Cong Duan,Guo-Long Tan###
(1738852, 1738859)
 The material of La0.2Sr0.7Fe12O19 with the intermediatecomposition exhibits a hybrid ferroelectric/antiferroelectric state.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5956112852664577,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3761755485893417,0,0,0,0,0,0,0,0,0,0,0,0.0219435736677116,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.006269592476489029,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 0, 'to', 3],[52.0, 14.3, 'J', 1],[87.0, 1.1, 'T', 3],[103.0, 0.95, 'uC', 3],[106.0, 2, ',', 3],[117.0, 117, '%', 3],[130.0, 540, '%', 3],[151.0, 208, 'kHz', 3]

La0.5Sr0.5Fe12O19
###Tuning Ferroelectrics to Antiferroelectrics in Multiferroic LaxSr1-xFe12O19 Ceramics|Cong-Cong Duan,Guo-Long Tan###
(1738898, 1738905)
 Therecoverable energy density of the antiferroelectric La0.5Sr0.5Fe12O19 phasereaches 14.3 J/cm3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.59375,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.375,0,0,0,0,0,0,0,0,0,0,0,0.015625,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.015625,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[189.0, 0, 'to', 4],[6.0, 14.3, 'J', 0],[41.0, 1.1, 'T', 2],[57.0, 0.95, 'uC', 2],[60.0, 2, ',', 2],[71.0, 117, '%', 2],[84.0, 540, '%', 2],[105.0, 208, 'kHz', 2]

B
###Spectral analysis of universal conductance fluctuations|I. M. Suslov###
(1739120, 1739120)
 Universal conductance fluctuations are usually observed in the form ofaperiodic oscillations in the magnetoresistance of thin wires as a function ofthe magnetic field B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 1, 'D', 2],[341.0, 1, 'D', 9]

B
###Spectral analysis of universal conductance fluctuations|I. M. Suslov###
(1739143, 1739143)
 If such oscillations are completely random at scalesexceeding xiB, their Fourier analysis should reveal a white noise spectrum atfrequencies below xiB-1.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 1, 'D', 1],[318.0, 1, 'D', 8]

B
###Spectral analysis of universal conductance fluctuations|I. M. Suslov###
(1739172, 1739172)
 If such oscillations are completely random at scalesexceeding xiB, their Fourier analysis should reveal a white noise spectrum atfrequencies below xiB-1.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 1, 'D', 1],[289.0, 1, 'D', 8]

Bi2Te3
###Magneto-Transport and High-Resolution Angle-Resolved Photoelectron Spectroscopy Studies of Palladium Doped Bi$_{2}$Te$_{3}$|Shailja Sharma,Shiv Kumar,Girish C. Tewari,Girish Sharma,Eike F. Schwier,Kenya Shimada,A. Taraphder,C. S. Yadav###
(1739531, 1739534)
Magneto-Transport and High-Resolution Angle-Resolved Photoelectron Spectroscopy Studies of Palladium Doped Bi2Te3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 1500, '%', 2],[108.0, 93000, 'cm', 2],[172.0, 0.05, ',', 3],[175.0, 0.1, ',', 3]

S
###Magneto-Transport and High-Resolution Angle-Resolved Photoelectron Spectroscopy Studies of Palladium Doped Bi$_{2}$Te$_{3}$|Shailja Sharma,Shiv Kumar,Girish C. Tewari,Girish Sharma,Eike F. Schwier,Kenya Shimada,A. Taraphder,C. S. Yadav###
(1739567, 1739567)
 We have performed magneto-transport and high-resolution angle-resolvedphotoelectron spectroscopy (ARPES) measurements on palladium (Pd) dopedtopological insulator Pdx<missing VAR>Bi2Te3 (0 leq x<missing VAR> leq 0.20) singlecrystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 1500, '%', 1],[75.0, 93000, 'cm', 1],[139.0, 0.05, ',', 2],[142.0, 0.1, ',', 2]

(Pd)
###Magneto-Transport and High-Resolution Angle-Resolved Photoelectron Spectroscopy Studies of Palladium Doped Bi$_{2}$Te$_{3}$|Shailja Sharma,Shiv Kumar,Girish C. Tewari,Girish Sharma,Eike F. Schwier,Kenya Shimada,A. Taraphder,C. S. Yadav###
(1739576, 1739578)
 We have performed magneto-transport and high-resolution angle-resolvedphotoelectron spectroscopy (ARPES) measurements on palladium (Pd) dopedtopological insulator Pdx<missing VAR>Bi2Te3 (0 leq x<missing VAR> leq 0.20) singlecrystals.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 1500, '%', 1],[64.0, 93000, 'cm', 1],[128.0, 0.05, ',', 2],[131.0, 0.1, ',', 2]

Pd
###Magneto-Transport and High-Resolution Angle-Resolved Photoelectron Spectroscopy Studies of Palladium Doped Bi$_{2}$Te$_{3}$|Shailja Sharma,Shiv Kumar,Girish C. Tewari,Girish Sharma,Eike F. Schwier,Kenya Shimada,A. Taraphder,C. S. Yadav###
(1739587, 1739587)
 We have performed magneto-transport and high-resolution angle-resolvedphotoelectron spectroscopy (ARPES) measurements on palladium (Pd) dopedtopological insulator Pdx<missing VAR>Bi2Te3 (0 leq x<missing VAR> leq 0.20) singlecrystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 1500, '%', 1],[55.0, 93000, 'cm', 1],[119.0, 0.05, ',', 2],[122.0, 0.1, ',', 2]

Bi2Te3
###Magneto-Transport and High-Resolution Angle-Resolved Photoelectron Spectroscopy Studies of Palladium Doped Bi$_{2}$Te$_{3}$|Shailja Sharma,Shiv Kumar,Girish C. Tewari,Girish Sharma,Eike F. Schwier,Kenya Shimada,A. Taraphder,C. S. Yadav###
(1739589, 1739592)
 We have performed magneto-transport and high-resolution angle-resolvedphotoelectron spectroscopy (ARPES) measurements on palladium (Pd) dopedtopological insulator Pdx<missing VAR>Bi2Te3 (0 leq x<missing VAR> leq 0.20) singlecrystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 1500, '%', 1],[50.0, 93000, 'cm', 1],[114.0, 0.05, ',', 2],[117.0, 0.1, ',', 2]

V
###Magneto-Transport and High-Resolution Angle-Resolved Photoelectron Spectroscopy Studies of Palladium Doped Bi$_{2}$Te$_{3}$|Shailja Sharma,Shiv Kumar,Girish C. Tewari,Girish Sharma,Eike F. Schwier,Kenya Shimada,A. Taraphder,C. S. Yadav###
(1739644, 1739644)
 We have observed unusually high values of magnetoresistance (sim1500%) and mobility (sim 93000 cm2V-1s<missing VAR>-1) at low temperaturesfor pristine Bi2Te3 that decrease on Pd doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 1500, '%', 0],[2.0, 93000, 'cm', 0],[62.0, 0.05, ',', 1],[65.0, 0.1, ',', 1]

Bi2Te3
###Magneto-Transport and High-Resolution Angle-Resolved Photoelectron Spectroscopy Studies of Palladium Doped Bi$_{2}$Te$_{3}$|Shailja Sharma,Shiv Kumar,Girish C. Tewari,Girish Sharma,Eike F. Schwier,Kenya Shimada,A. Taraphder,C. S. Yadav###
(1739663, 1739666)
 We have observed unusually high values of magnetoresistance (sim1500%) and mobility (sim 93000 cm2V-1s<missing VAR>-1) at low temperaturesfor pristine Bi2Te3 that decrease on Pd doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 1500, '%', 0],[21.0, 93000, 'cm', 0],[40.0, 0.05, ',', 1],[43.0, 0.1, ',', 1]

Pd
###Magneto-Transport and High-Resolution Angle-Resolved Photoelectron Spectroscopy Studies of Palladium Doped Bi$_{2}$Te$_{3}$|Shailja Sharma,Shiv Kumar,Girish C. Tewari,Girish Sharma,Eike F. Schwier,Kenya Shimada,A. Taraphder,C. S. Yadav###
(1739674, 1739674)
 We have observed unusually high values of magnetoresistance (sim1500%) and mobility (sim 93000 cm2V-1s<missing VAR>-1) at low temperaturesfor pristine Bi2Te3 that decrease on Pd doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 1500, '%', 0],[32.0, 93000, 'cm', 0],[32.0, 0.05, ',', 1],[35.0, 0.1, ',', 1]

H
###Magneto-Transport and High-Resolution Angle-Resolved Photoelectron Spectroscopy Studies of Palladium Doped Bi$_{2}$Te$_{3}$|Shailja Sharma,Shiv Kumar,Girish C. Tewari,Girish Sharma,Eike F. Schwier,Kenya Shimada,A. Taraphder,C. S. Yadav###
(1739689, 1739689)
 The Shubnikov-de Haas (SdH)oscillations have been detected for x<missing VAR>  0.05, 0.10, confirming the presence of2D<missing VAR> topological surface states (T<missing VAR>SSs) for these samples.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 1500, '%', 1],[47.0, 93000, 'cm', 1],[17.0, 0.05, ',', 0],[20.0, 0.1, ',', 0]

S
###Magneto-Transport and High-Resolution Angle-Resolved Photoelectron Spectroscopy Studies of Palladium Doped Bi$_{2}$Te$_{3}$|Shailja Sharma,Shiv Kumar,Girish C. Tewari,Girish Sharma,Eike F. Schwier,Kenya Shimada,A. Taraphder,C. S. Yadav###
(1739732, 1739732)
 The Shubnikov-de Haas (SdH)oscillations have been detected for x<missing VAR>  0.05, 0.10, confirming the presence of2D<missing VAR> topological surface states (T<missing VAR>SSs) for these samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 1500, '%', 1],[90.0, 93000, 'cm', 1],[26.0, 0.05, ',', 0],[23.0, 0.1, ',', 0]

Bi2Te3
###Magneto-Transport and High-Resolution Angle-Resolved Photoelectron Spectroscopy Studies of Palladium Doped Bi$_{2}$Te$_{3}$|Shailja Sharma,Shiv Kumar,Girish C. Tewari,Girish Sharma,Eike F. Schwier,Kenya Shimada,A. Taraphder,C. S. Yadav###
(1739770, 1739773)
 The Hall measurementshows the crossover from n<missing VAR>-type charge carriers in pristine Bi2Te3 top<missing VAR>-type charge carriers upon Pd doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 1500, '%', 2],[128.0, 93000, 'cm', 2],[64.0, 0.05, ',', 1],[61.0, 0.1, ',', 1]

Pd
###Magneto-Transport and High-Resolution Angle-Resolved Photoelectron Spectroscopy Studies of Palladium Doped Bi$_{2}$Te$_{3}$|Shailja Sharma,Shiv Kumar,Girish C. Tewari,Girish Sharma,Eike F. Schwier,Kenya Shimada,A. Taraphder,C. S. Yadav###
(1739788, 1739788)
 The Hall measurementshows the crossover from n<missing VAR>-type charge carriers in pristine Bi2Te3 top<missing VAR>-type charge carriers upon Pd doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 1500, '%', 2],[146.0, 93000, 'cm', 2],[82.0, 0.05, ',', 1],[79.0, 0.1, ',', 1]

S
###Magneto-Transport and High-Resolution Angle-Resolved Photoelectron Spectroscopy Studies of Palladium Doped Bi$_{2}$Te$_{3}$|Shailja Sharma,Shiv Kumar,Girish C. Tewari,Girish Sharma,Eike F. Schwier,Kenya Shimada,A. Taraphder,C. S. Yadav###
(1739799, 1739799)
 The ARPES measurements show that theconduction band crosses the Fermi level for pristine Bi2Te3 , and theDirac point of the T<missing VAR>SSs and bulk-derived valence bands indicated shift to lowerbinding energy upon Pd doping in a rigid-band-like way up to x<missing VAR> sim0.10.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 1500, '%', 3],[157.0, 93000, 'cm', 3],[93.0, 0.05, ',', 2],[90.0, 0.1, ',', 2]

Bi2Te3
###Magneto-Transport and High-Resolution Angle-Resolved Photoelectron Spectroscopy Studies of Palladium Doped Bi$_{2}$Te$_{3}$|Shailja Sharma,Shiv Kumar,Girish C. Tewari,Girish Sharma,Eike F. Schwier,Kenya Shimada,A. Taraphder,C. S. Yadav###
(1739826, 1739829)
 The ARPES measurements show that theconduction band crosses the Fermi level for pristine Bi2Te3 , and theDirac point of the T<missing VAR>SSs and bulk-derived valence bands indicated shift to lowerbinding energy upon Pd doping in a rigid-band-like way up to x<missing VAR> sim0.10.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[194.0, 1500, '%', 3],[184.0, 93000, 'cm', 3],[120.0, 0.05, ',', 2],[117.0, 0.1, ',', 2]

S
###Magneto-Transport and High-Resolution Angle-Resolved Photoelectron Spectroscopy Studies of Palladium Doped Bi$_{2}$Te$_{3}$|Shailja Sharma,Shiv Kumar,Girish C. Tewari,Girish Sharma,Eike F. Schwier,Kenya Shimada,A. Taraphder,C. S. Yadav###
(1739847, 1739847)
 The ARPES measurements show that theconduction band crosses the Fermi level for pristine Bi2Te3 , and theDirac point of the T<missing VAR>SSs and bulk-derived valence bands indicated shift to lowerbinding energy upon Pd doping in a rigid-band-like way up to x<missing VAR> sim0.10.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[215.0, 1500, '%', 3],[205.0, 93000, 'cm', 3],[141.0, 0.05, ',', 2],[138.0, 0.1, ',', 2]

Pd
###Magneto-Transport and High-Resolution Angle-Resolved Photoelectron Spectroscopy Studies of Palladium Doped Bi$_{2}$Te$_{3}$|Shailja Sharma,Shiv Kumar,Girish C. Tewari,Girish Sharma,Eike F. Schwier,Kenya Shimada,A. Taraphder,C. S. Yadav###
(1739875, 1739875)
 The ARPES measurements show that theconduction band crosses the Fermi level for pristine Bi2Te3 , and theDirac point of the T<missing VAR>SSs and bulk-derived valence bands indicated shift to lowerbinding energy upon Pd doping in a rigid-band-like way up to x<missing VAR> sim0.10.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[243.0, 1500, '%', 3],[233.0, 93000, 'cm', 3],[169.0, 0.05, ',', 2],[166.0, 0.1, ',', 2]

H
###Magneto-Transport and High-Resolution Angle-Resolved Photoelectron Spectroscopy Studies of Palladium Doped Bi$_{2}$Te$_{3}$|Shailja Sharma,Shiv Kumar,Girish C. Tewari,Girish Sharma,Eike F. Schwier,Kenya Shimada,A. Taraphder,C. S. Yadav###
(1739923, 1739923)
Based on the comparison of the parameters obtained from the SdH and ARPESmeasurements, the reduction in the k<missing VAR>F value in the magneto-transportmeasurements likely due to the band bending induced by the Schottky barrier.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[291.0, 1500, '%', 4],[281.0, 93000, 'cm', 4],[217.0, 0.05, ',', 3],[214.0, 0.1, ',', 3]

S
###Magneto-Transport and High-Resolution Angle-Resolved Photoelectron Spectroscopy Studies of Palladium Doped Bi$_{2}$Te$_{3}$|Shailja Sharma,Shiv Kumar,Girish C. Tewari,Girish Sharma,Eike F. Schwier,Kenya Shimada,A. Taraphder,C. S. Yadav###
(1739931, 1739931)
Based on the comparison of the parameters obtained from the SdH and ARPESmeasurements, the reduction in the k<missing VAR>F value in the magneto-transportmeasurements likely due to the band bending induced by the Schottky barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[299.0, 1500, '%', 4],[289.0, 93000, 'cm', 4],[225.0, 0.05, ',', 3],[222.0, 0.1, ',', 3]

F
###Magneto-Transport and High-Resolution Angle-Resolved Photoelectron Spectroscopy Studies of Palladium Doped Bi$_{2}$Te$_{3}$|Shailja Sharma,Shiv Kumar,Girish C. Tewari,Girish Sharma,Eike F. Schwier,Kenya Shimada,A. Taraphder,C. S. Yadav###
(1739946, 1739946)
Based on the comparison of the parameters obtained from the SdH and ARPESmeasurements, the reduction in the k<missing VAR>F value in the magneto-transportmeasurements likely due to the band bending induced by the Schottky barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[314.0, 1500, '%', 4],[304.0, 93000, 'cm', 4],[240.0, 0.05, ',', 3],[237.0, 0.1, ',', 3]

SrTiO3/LaAlO3
###On the origin of Field-Induced Boson Insulating States in a 2D Superconducting Electron Gas with Strong Spin-Orbit Scatterings|Tsofar Maniv,Vladimir Zhuravlev###
(1740072, 1740080)
 We search for the deep origin of the field-inducedsuperconductor-to-insulator transitions observed experimentally inelectron-doped SrTiO3/LaAlO3 interfaces, which were analyzedtheoretically very recently within the framework of superconductingfluctuations approach (Phys.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[59.0, 2, 'D', 1],[43.0, 104, ',', 2],[178.0, 2, 'D', 4]

B
###On the origin of Field-Induced Boson Insulating States in a 2D Superconducting Electron Gas with Strong Spin-Orbit Scatterings|Tsofar Maniv,Vladimir Zhuravlev###
(1740120, 1740120)
 B bf104, 054503 (2021)).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 2, 'D', 3],[3.0, 104, ',', 0],[138.0, 2, 'D', 2]

SrTiO3/LaAlO3
###On the origin of Field-Induced Boson Insulating States in a 2D Superconducting Electron Gas with Strong Spin-Orbit Scatterings|Tsofar Maniv,Vladimir Zhuravlev###
(1740272, 1740280)
 Application ofthis model to the gate-voltage tuned 2D electron system, created in theSrTiO3/LaAlO3 (111) interface at low temperatures, shows that, atsufficiently high fields, the D<missing VAR>OS conductivity prevails over theparaconductivity, resulting in strongly enhanced magnetoresistance in systemswith sufficiently small carriers density.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[259.0, 2, 'D', 5],[149.0, 104, ',', 2],[14.0, 2, 'D', 0]

OS
###On the origin of Field-Induced Boson Insulating States in a 2D Superconducting Electron Gas with Strong Spin-Orbit Scatterings|Tsofar Maniv,Vladimir Zhuravlev###
(1740313, 1740314)
 Application ofthis model to the gate-voltage tuned 2D electron system, created in theSrTiO3/LaAlO3 (111) interface at low temperatures, shows that, atsufficiently high fields, the D<missing VAR>OS conductivity prevails over theparaconductivity, resulting in strongly enhanced magnetoresistance in systemswith sufficiently small carriers density.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[300.0, 2, 'D', 5],[190.0, 104, ',', 2],[55.0, 2, 'D', 0]

PH
###A theory for anisotropic magnetoresistance in materials with two vector order parameters|X. R. Wang###
(1740463, 1740464)
 Anisotropic magnetoresistance (AMR) and related planar Hall resistance (PHR)are ubiquitous phenomena of magnetic materials.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PH
###A theory for anisotropic magnetoresistance in materials with two vector order parameters|X. R. Wang###
(1740501, 1740502)
 Although the universal angulardependences of AMR and PHR<missing VAR> in magnetic polycrystalline materials with one orderparameter are well known, no similar universal relation for other class ofmagnetic materials are known to date.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###A theory for anisotropic magnetoresistance in materials with two vector order parameters|X. R. Wang###
(1740561, 1740561)
 Here I present a general theory ofgalvanomagnetic effects in magnetic materials with two vector order parameters,such as magnetic single crystals with a dominated crystalline axis orpolycrystalline non-collinear ferrimagnetic materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PH
###A theory for anisotropic magnetoresistance in materials with two vector order parameters|X. R. Wang###
(1740645, 1740646)
 It is shown that AMR andPHR<missing VAR> have a universal angular dependence.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###A theory for anisotropic magnetoresistance in materials with two vector order parameters|X. R. Wang###
(1740660, 1740660)
 In general, both longitudinal andtransverse resistivity are non-reciprocal in the absence of inversion symmetryResistivity takes different value when the current is reversed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PH
###A theory for anisotropic magnetoresistance in materials with two vector order parameters|X. R. Wang###
(1740735, 1740736)
 Different fromsimple magnetic polycrystalline materials where AMR and PHR<missing VAR> have the samemagnitude, and pi/4 out of phase, the magnitude of AMR and PHR<missing VAR> of materialswith two vector order parameters are not the same in general, and the phasedifference is not pi/4.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PH
###A theory for anisotropic magnetoresistance in materials with two vector order parameters|X. R. Wang###
(1740774, 1740775)
 Different fromsimple magnetic polycrystalline materials where AMR and PHR<missing VAR> have the samemagnitude, and pi/4 out of phase, the magnitude of AMR and PHR<missing VAR> of materialswith two vector order parameters are not the same in general, and the phasedifference is not pi/4.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PH
###A theory for anisotropic magnetoresistance in materials with two vector order parameters|X. R. Wang###
(1740845, 1740846)
 Instead of pi periodicity of the usual AMR andPHR<missing VAR>, the periodicities of materials with two order parameters are 2pi.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Nonreciprocal Nature and Magnetochiral Charge Polarization in Chiral Molecular Devices|Jiewen Xiao,Binghai Yan###
(1740940, 1740940)
 For example, chiral molecules like D<missing VAR>NA generate giant spinpolarization in nanodevices characterized by large magnetoresistance (MR).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(CISS)
###Nonreciprocal Nature and Magnetochiral Charge Polarization in Chiral Molecular Devices|Jiewen Xiao,Binghai Yan###
(1740986, 1740991)
 Thisphenomenon, called chirality-induced spin selectivity (CISS), paves pathwaysfor unconventional spintronic devices and enantiomer separation.
Featurization successful!
0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CISS
###Nonreciprocal Nature and Magnetochiral Charge Polarization in Chiral Molecular Devices|Jiewen Xiao,Binghai Yan###
(1741024, 1741027)
 Different fromordinary transport, CISS MR violates Onsagers<missing VAR> reciprocal relation, and itsphysical mechanism is elusive and debated.
Featurization terminated normally.
0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Nonreciprocal Nature and Magnetochiral Charge Polarization in Chiral Molecular Devices|Jiewen Xiao,Binghai Yan###
(1741060, 1741060)
 In this work, we propose that theCISS MR is intimately related to the electric magnetochiral anisotropy (EMCA)while EMCA respects Onsagers<missing VAR> relation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CISS
###Nonreciprocal Nature and Magnetochiral Charge Polarization in Chiral Molecular Devices|Jiewen Xiao,Binghai Yan###
(1741076, 1741079)
 In this work, we propose that theCISS MR is intimately related to the electric magnetochiral anisotropy (EMCA)while EMCA respects Onsagers<missing VAR> relation.
Featurization terminated normally.
0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Nonreciprocal Nature and Magnetochiral Charge Polarization in Chiral Molecular Devices|Jiewen Xiao,Binghai Yan###
(1741103, 1741103)
 In this work, we propose that theCISS MR is intimately related to the electric magnetochiral anisotropy (EMCA)while EMCA respects Onsagers<missing VAR> relation.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Nonreciprocal Nature and Magnetochiral Charge Polarization in Chiral Molecular Devices|Jiewen Xiao,Binghai Yan###
(1741112, 1741112)
 In this work, we propose that theCISS MR is intimately related to the electric magnetochiral anisotropy (EMCA)while EMCA respects Onsagers<missing VAR> relation.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Nonreciprocal Nature and Magnetochiral Charge Polarization in Chiral Molecular Devices|Jiewen Xiao,Binghai Yan###
(1741123, 1741123)
 In a molecular device including aferromagnetic electrode, the chiral molecule, as a spin polarizer, leads toEMCA in the second-order response to the electric field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Nonreciprocal Nature and Magnetochiral Charge Polarization in Chiral Molecular Devices|Jiewen Xiao,Binghai Yan###
(1741164, 1741164)
 In a molecular device including aferromagnetic electrode, the chiral molecule, as a spin polarizer, leads toEMCA in the second-order response to the electric field.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Nonreciprocal Nature and Magnetochiral Charge Polarization in Chiral Molecular Devices|Jiewen Xiao,Binghai Yan###
(1741191, 1741191)
 However, EMCA furthergenerates extra charge accumulation in the device given the insulating natureof the molecule.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Nonreciprocal Nature and Magnetochiral Charge Polarization in Chiral Molecular Devices|Jiewen Xiao,Binghai Yan###
(1741271, 1741271)
 Here, reversing either electrode magnetization or moleculechirality changes the charge accumulation, which we term magnetochiral chargepolarization (M<missing VAR>CCP).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CCP
###Nonreciprocal Nature and Magnetochiral Charge Polarization in Chiral Molecular Devices|Jiewen Xiao,Binghai Yan###
(1741278, 1741280)
 Then M<missing VAR>CCP modifies the tunneling barrier, alters thetunneling resistance sensitively, and thus, leads to a higher-order MR thatviolates Onsagers<missing VAR> reciprocity.
Featurization terminated normally.
0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Nonreciprocal Nature and Magnetochiral Charge Polarization in Chiral Molecular Devices|Jiewen Xiao,Binghai Yan###
(1741349, 1741349)
 Our model reveals the deep connection betweenEMCA and CISS MR and explains the unusually large MR ratio and nonequilibriumnature of CISS.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CISS
###Nonreciprocal Nature and Magnetochiral Charge Polarization in Chiral Molecular Devices|Jiewen Xiao,Binghai Yan###
(1741354, 1741357)
 Our model reveals the deep connection betweenEMCA and CISS MR and explains the unusually large MR ratio and nonequilibriumnature of CISS.
Featurization terminated normally.
0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CISS
###Nonreciprocal Nature and Magnetochiral Charge Polarization in Chiral Molecular Devices|Jiewen Xiao,Binghai Yan###
(1741386, 1741389)
 Our model reveals the deep connection betweenEMCA and CISS MR and explains the unusually large MR ratio and nonequilibriumnature of CISS.
Featurization terminated normally.
0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CISS
###Nonreciprocal Nature and Magnetochiral Charge Polarization in Chiral Molecular Devices|Jiewen Xiao,Binghai Yan###
(1741417, 1741420)
 We predict that the molecular spin valve device exhibits acrossover from CISS-MR to EMCA when the chiral molecule turns more metallicbecause of losing the accumulated charge.
Featurization terminated normally.
0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Nonreciprocal Nature and Magnetochiral Charge Polarization in Chiral Molecular Devices|Jiewen Xiao,Binghai Yan###
(1741429, 1741429)
 We predict that the molecular spin valve device exhibits acrossover from CISS-MR to EMCA when the chiral molecule turns more metallicbecause of losing the accumulated charge.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CISS
###Nonreciprocal Nature and Magnetochiral Charge Polarization in Chiral Molecular Devices|Jiewen Xiao,Binghai Yan###
(1741466, 1741469)
 We further anticipate CISS MR mayappear in chiral molecular devices without ferromagnetic electrodes but in anexternal magnetic field in case EMCA and charge accumulation co-exist.
Featurization terminated normally.
0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Nonreciprocal Nature and Magnetochiral Charge Polarization in Chiral Molecular Devices|Jiewen Xiao,Binghai Yan###
(1741512, 1741512)
 We further anticipate CISS MR mayappear in chiral molecular devices without ferromagnetic electrodes but in anexternal magnetic field in case EMCA and charge accumulation co-exist.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ge
###Robust Dirac lines against Ge vacancy and possible spin-orbit Dirac points in nonsymmorphic HfGe0.92Te|L. Chen,L. Q. Zhou,Y. Zhou,C. Liu,Z. N. Guo,S. Y. Gao,W. H. Fan,J. F. Xu,Y. X. Guo,K,Liao,J. O. Wang,H. M. Weng,G. Wang###
(1741542, 1741542)
Robust Dirac lines against Ge vacancy and possible spin-orbit Dirac points in nonsymmorphic HfGe0.92Te.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 8, '%', 4],[409.0, 2, 'D', 8]

HfGe0.92Te
###Robust Dirac lines against Ge vacancy and possible spin-orbit Dirac points in nonsymmorphic HfGe0.92Te|L. Chen,L. Q. Zhou,Y. Zhou,C. Liu,Z. N. Guo,S. Y. Gao,W. H. Fan,J. F. Xu,Y. X. Guo,K,Liao,J. O. Wang,H. M. Weng,G. Wang###
(1741562, 1741565)
Robust Dirac lines against Ge vacancy and possible spin-orbit Dirac points in nonsymmorphic HfGe0.92Te.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.31506849315068497,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3424657534246575,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3424657534246575,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 8, '%', 4],[386.0, 2, 'D', 8]

HfGe0.92Te
###Robust Dirac lines against Ge vacancy and possible spin-orbit Dirac points in nonsymmorphic HfGe0.92Te|L. Chen,L. Q. Zhou,Y. Zhou,C. Liu,Z. N. Guo,S. Y. Gao,W. H. Fan,J. F. Xu,Y. X. Guo,K,Liao,J. O. Wang,H. M. Weng,G. Wang###
(1741623, 1741626)
 Here we report the growth, crystal structure, and band structure ofHfGe0.92Te single crystals, featuring three different types of Dirac points.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.31506849315068497,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3424657534246575,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3424657534246575,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 8, '%', 2],[325.0, 2, 'D', 6]

HfGe0.92Te
###Robust Dirac lines against Ge vacancy and possible spin-orbit Dirac points in nonsymmorphic HfGe0.92Te|L. Chen,L. Q. Zhou,Y. Zhou,C. Liu,Z. N. Guo,S. Y. Gao,W. H. Fan,J. F. Xu,Y. X. Guo,K,Liao,J. O. Wang,H. M. Weng,G. Wang###
(1741649, 1741652)
HfGe0.92Te crystalizes in a nonsymmorphic tetragonal space group P4/nmm (No.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.31506849315068497,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3424657534246575,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3424657534246575,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 8, '%', 1],[299.0, 2, 'D', 5]

P4
###Robust Dirac lines against Ge vacancy and possible spin-orbit Dirac points in nonsymmorphic HfGe0.92Te|L. Chen,L. Q. Zhou,Y. Zhou,C. Liu,Z. N. Guo,S. Y. Gao,W. H. Fan,J. F. Xu,Y. X. Guo,K,Liao,J. O. Wang,H. M. Weng,G. Wang###
(1741668, 1741669)
HfGe0.92Te crystalizes in a nonsymmorphic tetragonal space group P4/nmm (No.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 8, '%', 1],[282.0, 2, 'D', 5]

No
###Robust Dirac lines against Ge vacancy and possible spin-orbit Dirac points in nonsymmorphic HfGe0.92Te|L. Chen,L. Q. Zhou,Y. Zhou,C. Liu,Z. N. Guo,S. Y. Gao,W. H. Fan,J. F. Xu,Y. X. Guo,K,Liao,J. O. Wang,H. M. Weng,G. Wang###
(1741674, 1741674)
HfGe0.92Te crystalizes in a nonsymmorphic tetragonal space group P4/nmm (No.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0
[24.0, 8, '%', 1],[277.0, 2, 'D', 5]

Ge
###Robust Dirac lines against Ge vacancy and possible spin-orbit Dirac points in nonsymmorphic HfGe0.92Te|L. Chen,L. Q. Zhou,Y. Zhou,C. Liu,Z. N. Guo,S. Y. Gao,W. H. Fan,J. F. Xu,Y. X. Guo,K,Liao,J. O. Wang,H. M. Weng,G. Wang###
(1741686, 1741686)
129), having square Ge-atom plane with vacancies about 8%.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 8, '%', 0],[265.0, 2, 'D', 4]

Ge
###Robust Dirac lines against Ge vacancy and possible spin-orbit Dirac points in nonsymmorphic HfGe0.92Te|L. Chen,L. Q. Zhou,Y. Zhou,C. Liu,Z. N. Guo,S. Y. Gao,W. H. Fan,J. F. Xu,Y. X. Guo,K,Liao,J. O. Wang,H. M. Weng,G. Wang###
(1741711, 1741711)
 Despite thevacancies on Ge site, the Dirac nodal line composed of conventional Diracpoints vulnerable to spin-orbit coupling (SOC) is observed using angle-resolvedphotoemission spectroscopy, accompanied with the robust Dirac line protected bythe nonsymmorphic symmetry against both SOC and vacancies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 8, '%', 1],[240.0, 2, 'D', 3]

(SOC)
###Robust Dirac lines against Ge vacancy and possible spin-orbit Dirac points in nonsymmorphic HfGe0.92Te|L. Chen,L. Q. Zhou,Y. Zhou,C. Liu,Z. N. Guo,S. Y. Gao,W. H. Fan,J. F. Xu,Y. X. Guo,K,Liao,J. O. Wang,H. M. Weng,G. Wang###
(1741745, 1741749)
 Despite thevacancies on Ge site, the Dirac nodal line composed of conventional Diracpoints vulnerable to spin-orbit coupling (SOC) is observed using angle-resolvedphotoemission spectroscopy, accompanied with the robust Dirac line protected bythe nonsymmorphic symmetry against both SOC and vacancies.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 8, '%', 1],[202.0, 2, 'D', 3]

SOC
###Robust Dirac lines against Ge vacancy and possible spin-orbit Dirac points in nonsymmorphic HfGe0.92Te|L. Chen,L. Q. Zhou,Y. Zhou,C. Liu,Z. N. Guo,S. Y. Gao,W. H. Fan,J. F. Xu,Y. X. Guo,K,Liao,J. O. Wang,H. M. Weng,G. Wang###
(1741794, 1741796)
 Despite thevacancies on Ge site, the Dirac nodal line composed of conventional Diracpoints vulnerable to spin-orbit coupling (SOC) is observed using angle-resolvedphotoemission spectroscopy, accompanied with the robust Dirac line protected bythe nonsymmorphic symmetry against both SOC and vacancies.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 8, '%', 1],[155.0, 2, 'D', 3]

S
###Robust Dirac lines against Ge vacancy and possible spin-orbit Dirac points in nonsymmorphic HfGe0.92Te|L. Chen,L. Q. Zhou,Y. Zhou,C. Liu,Z. N. Guo,S. Y. Gao,W. H. Fan,J. F. Xu,Y. X. Guo,K,Liao,J. O. Wang,H. M. Weng,G. Wang###
(1741816, 1741816)
 Specially,spin-orbit Dirac points (SD<missing VAR>Ps) originated from the surface formed under SOC arehinted to exist according to our experiments and calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 8, '%', 2],[135.0, 2, 'D', 2]

SOC
###Robust Dirac lines against Ge vacancy and possible spin-orbit Dirac points in nonsymmorphic HfGe0.92Te|L. Chen,L. Q. Zhou,Y. Zhou,C. Liu,Z. N. Guo,S. Y. Gao,W. H. Fan,J. F. Xu,Y. X. Guo,K,Liao,J. O. Wang,H. M. Weng,G. Wang###
(1741833, 1741835)
 Specially,spin-orbit Dirac points (SD<missing VAR>Ps) originated from the surface formed under SOC arehinted to exist according to our experiments and calculations.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 8, '%', 2],[116.0, 2, 'D', 2]

HfGe0.92Te
###Robust Dirac lines against Ge vacancy and possible spin-orbit Dirac points in nonsymmorphic HfGe0.92Te|L. Chen,L. Q. Zhou,Y. Zhou,C. Liu,Z. N. Guo,S. Y. Gao,W. H. Fan,J. F. Xu,Y. X. Guo,K,Liao,J. O. Wang,H. M. Weng,G. Wang###
(1741895, 1741898)
 HfGe0.92Te is a good candidate toexplore exotic topological phases or topological properties with threedifferent types of Dirac points and a promising candidate to realize 2D SD<missing VAR>Ps.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.31506849315068497,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3424657534246575,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3424657534246575,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[197.0, 8, '%', 4],[53.0, 2, 'D', 0]

S
###Robust Dirac lines against Ge vacancy and possible spin-orbit Dirac points in nonsymmorphic HfGe0.92Te|L. Chen,L. Q. Zhou,Y. Zhou,C. Liu,Z. N. Guo,S. Y. Gao,W. H. Fan,J. F. Xu,Y. X. Guo,K,Liao,J. O. Wang,H. M. Weng,G. Wang###
(1741953, 1741953)
 HfGe0.92Te is a good candidate toexplore exotic topological phases or topological properties with threedifferent types of Dirac points and a promising candidate to realize 2D SD<missing VAR>Ps.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[255.0, 8, '%', 4],[2.0, 2, 'D', 0]

CsV3Sb5
###3D Fermi surfaces from charge order in layered CsV$_3$Sb$_5$|Xiangwei Huang,Chunyu Guo,Carsten Putzke,Yan Sun,Maia G. Vergniory,Ion Errea,Martin Gutierrez-Amigo,Dong Chen,Claudia Felser,Philip J. W. Moll###
(1741983, 1741987)
3D<missing VAR> Fermi surfaces from charge order in layered CsV3Sb5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5555555555555556,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[200.0, 3, 'D', 5],[272.0, 4, 'orders', 6],[286.0, 3, 'D', 7],[351.0, 3, 'D', 8]

CsV3Sb5
###3D Fermi surfaces from charge order in layered CsV$_3$Sb$_5$|Xiangwei Huang,Chunyu Guo,Carsten Putzke,Yan Sun,Maia G. Vergniory,Ion Errea,Martin Gutierrez-Amigo,Dong Chen,Claudia Felser,Philip J. W. Moll###
(1742002, 1742006)
 The cascade of electronic phases in CsV3Sb5 raises the prospect todisentangle their mutual interactions in a clean, strongly interacting Kagomelattice.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5555555555555556,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 3, 'D', 4],[253.0, 4, 'orders', 5],[267.0, 3, 'D', 6],[332.0, 3, 'D', 7]

CsV3Sb5
###3D Fermi surfaces from charge order in layered CsV$_3$Sb$_5$|Xiangwei Huang,Chunyu Guo,Carsten Putzke,Yan Sun,Maia G. Vergniory,Ion Errea,Martin Gutierrez-Amigo,Dong Chen,Claudia Felser,Philip J. W. Moll###
(1742102, 1742106)
 The layered structure of CsV3Sb5 reflects inBrillouin-zone-sized quasi-2D<missing VAR> Fermi surfaces and a significant transportanisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5555555555555556,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 3, 'D', 2],[153.0, 4, 'orders', 3],[167.0, 3, 'D', 4],[232.0, 3, 'D', 5]

CsV3Sb5
###3D Fermi surfaces from charge order in layered CsV$_3$Sb$_5$|Xiangwei Huang,Chunyu Guo,Carsten Putzke,Yan Sun,Maia G. Vergniory,Ion Errea,Martin Gutierrez-Amigo,Dong Chen,Claudia Felser,Philip J. W. Moll###
(1742150, 1742154)
 Yet here we demonstrate that CsV3Sb5 is a three-dimensionalmetal within the charge-density-wave (CD<missing VAR>W) state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5555555555555556,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 3, 'D', 1],[105.0, 4, 'orders', 2],[119.0, 3, 'D', 3],[184.0, 3, 'D', 4]

C
###3D Fermi surfaces from charge order in layered CsV$_3$Sb$_5$|Xiangwei Huang,Chunyu Guo,Carsten Putzke,Yan Sun,Maia G. Vergniory,Ion Errea,Martin Gutierrez-Amigo,Dong Chen,Claudia Felser,Philip J. W. Moll###
(1742178, 1742178)
 Yet here we demonstrate that CsV3Sb5 is a three-dimensionalmetal within the charge-density-wave (CD<missing VAR>W) state.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 3, 'D', 1],[81.0, 4, 'orders', 2],[95.0, 3, 'D', 3],[160.0, 3, 'D', 4]

W
###3D Fermi surfaces from charge order in layered CsV$_3$Sb$_5$|Xiangwei Huang,Chunyu Guo,Carsten Putzke,Yan Sun,Maia G. Vergniory,Ion Errea,Martin Gutierrez-Amigo,Dong Chen,Claudia Felser,Philip J. W. Moll###
(1742180, 1742180)
 Yet here we demonstrate that CsV3Sb5 is a three-dimensionalmetal within the charge-density-wave (CD<missing VAR>W) state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 3, 'D', 1],[79.0, 4, 'orders', 2],[93.0, 3, 'D', 3],[158.0, 3, 'D', 4]

W
###3D Fermi surfaces from charge order in layered CsV$_3$Sb$_5$|Xiangwei Huang,Chunyu Guo,Carsten Putzke,Yan Sun,Maia G. Vergniory,Ion Errea,Martin Gutierrez-Amigo,Dong Chen,Claudia Felser,Philip J. W. Moll###
(1742228, 1742228)
 Theiremergence at TCDWsim 93 K results in an anomalous sudden increase of thein-plane magnetoresistance by 4 orders of magnitude.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 3, 'D', 1],[31.0, 4, 'orders', 0],[45.0, 3, 'D', 1],[110.0, 3, 'D', 2]

K
###3D Fermi surfaces from charge order in layered CsV$_3$Sb$_5$|Xiangwei Huang,Chunyu Guo,Carsten Putzke,Yan Sun,Maia G. Vergniory,Ion Errea,Martin Gutierrez-Amigo,Dong Chen,Claudia Felser,Philip J. W. Moll###
(1742233, 1742233)
 Theiremergence at TCDWsim 93 K results in an anomalous sudden increase of thein-plane magnetoresistance by 4 orders of magnitude.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 3, 'D', 1],[26.0, 4, 'orders', 0],[40.0, 3, 'D', 1],[105.0, 3, 'D', 2]

In
###Non-adiabatic corrections to chiral charge pumping in topological nodal semimetals|Matej Badin###
(1742469, 1742469)
 In this paper, weshow that relative homotopy invariant [Sun et al.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 121, ',', 4],[72.0, 16, ',', 7],[257.0, 538, ',', 10]

La0.5Ba0.5CoO3
###Magnetostriction in microwave synthesized La0.5Ba0.5CoO3|M. Manikandan,A. Ghosh,R. Mahendiran###
(1742805, 1742811)
Magnetostriction in microwave synthesized La0.5Ba0.5CoO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 20, 'minutes', 1],[123.0, 177, 'K', 2],[159.0, 3, 'kOe', 2],[168.0, 10, 'K', 3],[214.0, 50, 'kOe', 3],[266.0, 10, 'K', 4],[281.0, 2, '%', 4],[288.0, 70, 'kOe', 4],[391.0, 50, 'kOe', 6],[408.0, 252, 'ppm', 7],[412.0, 10, 'K', 7]

La0.5Ba0.5CoO3-d
###Magnetostriction in microwave synthesized La0.5Ba0.5CoO3|M. Manikandan,A. Ghosh,R. Mahendiran###
(1742822, 1742830)
 A single-phase polycrystalline La0.5Ba0.5CoO3-d sample was synthesized bymicrowave irradiation within 20 minutes of processing time and its structural,magnetic, electrical, and magnetostrictive properties were investigated.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[16.0, 20, 'minutes', 0],[104.0, 177, 'K', 1],[140.0, 3, 'kOe', 1],[149.0, 10, 'K', 2],[195.0, 50, 'kOe', 2],[247.0, 10, 'K', 3],[262.0, 2, '%', 3],[269.0, 70, 'kOe', 3],[372.0, 50, 'kOe', 5],[389.0, 252, 'ppm', 6],[393.0, 10, 'K', 6]

H
###Magnetostriction in microwave synthesized La0.5Ba0.5CoO3|M. Manikandan,A. Ghosh,R. Mahendiran###
(1742908, 1742908)
 Whilethe temperature dependence of field-cooled magnetization (M) in a field of H 0.5 k<missing VAR>Oe indicates the onset of ferromagnetic transition at T<missing VAR>C  177 K,irreversibility between the zero field-cooled and field cooled M(T) persistseven at H  3 kOe.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 20, 'minutes', 1],[26.0, 177, 'K', 0],[62.0, 3, 'kOe', 0],[71.0, 10, 'K', 1],[117.0, 50, 'kOe', 1],[169.0, 10, 'K', 2],[184.0, 2, '%', 2],[191.0, 70, 'kOe', 2],[294.0, 50, 'kOe', 4],[311.0, 252, 'ppm', 5],[315.0, 10, 'K', 5]

C
###Magnetostriction in microwave synthesized La0.5Ba0.5CoO3|M. Manikandan,A. Ghosh,R. Mahendiran###
(1742932, 1742932)
 Whilethe temperature dependence of field-cooled magnetization (M) in a field of H 0.5 k<missing VAR>Oe indicates the onset of ferromagnetic transition at T<missing VAR>C  177 K,irreversibility between the zero field-cooled and field cooled M(T) persistseven at H  3 kOe.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 20, 'minutes', 1],[2.0, 177, 'K', 0],[38.0, 3, 'kOe', 0],[47.0, 10, 'K', 1],[93.0, 50, 'kOe', 1],[145.0, 10, 'K', 2],[160.0, 2, '%', 2],[167.0, 70, 'kOe', 2],[270.0, 50, 'kOe', 4],[287.0, 252, 'ppm', 5],[291.0, 10, 'K', 5]

H
###Magnetostriction in microwave synthesized La0.5Ba0.5CoO3|M. Manikandan,A. Ghosh,R. Mahendiran###
(1742968, 1742968)
 Whilethe temperature dependence of field-cooled magnetization (M) in a field of H 0.5 k<missing VAR>Oe indicates the onset of ferromagnetic transition at T<missing VAR>C  177 K,irreversibility between the zero field-cooled and field cooled M(T) persistseven at H  3 kOe.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 20, 'minutes', 1],[34.0, 177, 'K', 0],[2.0, 3, 'kOe', 0],[11.0, 10, 'K', 1],[57.0, 50, 'kOe', 1],[109.0, 10, 'K', 2],[124.0, 2, '%', 2],[131.0, 70, 'kOe', 2],[234.0, 50, 'kOe', 4],[251.0, 252, 'ppm', 5],[255.0, 10, 'K', 5]

(H)
###Magnetostriction in microwave synthesized La0.5Ba0.5CoO3|M. Manikandan,A. Ghosh,R. Mahendiran###
(1742974, 1742976)
 M<missing VAR>(H) at 10 K does not saturate at the maximum availablefield and has a much smaller value (0.87 muB/Co in a field of 50 kOe) than1.9 muB/Co expected for spin-only contribution from intermediate Co3 andCo4 spins.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 20, 'minutes', 2],[40.0, 177, 'K', 1],[4.0, 3, 'kOe', 1],[3.0, 10, 'K', 0],[49.0, 50, 'kOe', 0],[101.0, 10, 'K', 1],[116.0, 2, '%', 1],[123.0, 70, 'kOe', 1],[226.0, 50, 'kOe', 3],[243.0, 252, 'ppm', 4],[247.0, 10, 'K', 4]

B/Co
###Magnetostriction in microwave synthesized La0.5Ba0.5CoO3|M. Manikandan,A. Ghosh,R. Mahendiran###
(1743014, 1743016)
 M<missing VAR>(H) at 10 K does not saturate at the maximum availablefield and has a much smaller value (0.87 muB/Co in a field of 50 kOe) than1.9 muB/Co expected for spin-only contribution from intermediate Co3 andCo4 spins.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[168.0, 20, 'minutes', 2],[80.0, 177, 'K', 1],[44.0, 3, 'kOe', 1],[35.0, 10, 'K', 0],[9.0, 50, 'kOe', 0],[61.0, 10, 'K', 1],[76.0, 2, '%', 1],[83.0, 70, 'kOe', 1],[186.0, 50, 'kOe', 3],[203.0, 252, 'ppm', 4],[207.0, 10, 'K', 4]

B/Co
###Magnetostriction in microwave synthesized La0.5Ba0.5CoO3|M. Manikandan,A. Ghosh,R. Mahendiran###
(1743034, 1743036)
 M<missing VAR>(H) at 10 K does not saturate at the maximum availablefield and has a much smaller value (0.87 muB/Co in a field of 50 kOe) than1.9 muB/Co expected for spin-only contribution from intermediate Co3 andCo4 spins.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[188.0, 20, 'minutes', 2],[100.0, 177, 'K', 1],[64.0, 3, 'kOe', 1],[55.0, 10, 'K', 0],[9.0, 50, 'kOe', 0],[41.0, 10, 'K', 1],[56.0, 2, '%', 1],[63.0, 70, 'kOe', 1],[166.0, 50, 'kOe', 3],[183.0, 252, 'ppm', 4],[187.0, 10, 'K', 4]

Co3
###Magnetostriction in microwave synthesized La0.5Ba0.5CoO3|M. Manikandan,A. Ghosh,R. Mahendiran###
(1743052, 1743053)
 M<missing VAR>(H) at 10 K does not saturate at the maximum availablefield and has a much smaller value (0.87 muB/Co in a field of 50 kOe) than1.9 muB/Co expected for spin-only contribution from intermediate Co3 andCo4 spins.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[206.0, 20, 'minutes', 2],[118.0, 177, 'K', 1],[82.0, 3, 'kOe', 1],[73.0, 10, 'K', 0],[27.0, 50, 'kOe', 0],[24.0, 10, 'K', 1],[39.0, 2, '%', 1],[46.0, 70, 'kOe', 1],[149.0, 50, 'kOe', 3],[166.0, 252, 'ppm', 4],[170.0, 10, 'K', 4]

Co4
###Magnetostriction in microwave synthesized La0.5Ba0.5CoO3|M. Manikandan,A. Ghosh,R. Mahendiran###
(1743058, 1743059)
 M<missing VAR>(H) at 10 K does not saturate at the maximum availablefield and has a much smaller value (0.87 muB/Co in a field of 50 kOe) than1.9 muB/Co expected for spin-only contribution from intermediate Co3 andCo4 spins.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[212.0, 20, 'minutes', 2],[124.0, 177, 'K', 1],[88.0, 3, 'kOe', 1],[79.0, 10, 'K', 0],[33.0, 50, 'kOe', 0],[18.0, 10, 'K', 1],[33.0, 2, '%', 1],[40.0, 70, 'kOe', 1],[143.0, 50, 'kOe', 3],[160.0, 252, 'ppm', 4],[164.0, 10, 'K', 4]

H
###Magnetostriction in microwave synthesized La0.5Ba0.5CoO3|M. Manikandan,A. Ghosh,R. Mahendiran###
(1743097, 1743097)
 The resistivity shows insulating behavior down to 10 K and only asmall magnetoresistance ( 2% for H  70 kOe) occurs around T<missing VAR>C.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[251.0, 20, 'minutes', 3],[163.0, 177, 'K', 2],[127.0, 3, 'kOe', 2],[118.0, 10, 'K', 1],[72.0, 50, 'kOe', 1],[20.0, 10, 'K', 0],[5.0, 2, '%', 0],[2.0, 70, 'kOe', 0],[105.0, 50, 'kOe', 2],[122.0, 252, 'ppm', 3],[126.0, 10, 'K', 3]

C
###Magnetostriction in microwave synthesized La0.5Ba0.5CoO3|M. Manikandan,A. Ghosh,R. Mahendiran###
(1743107, 1743107)
 The resistivity shows insulating behavior down to 10 K and only asmall magnetoresistance ( 2% for H  70 kOe) occurs around T<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[261.0, 20, 'minutes', 3],[173.0, 177, 'K', 2],[137.0, 3, 'kOe', 2],[128.0, 10, 'K', 1],[82.0, 50, 'kOe', 1],[30.0, 10, 'K', 0],[15.0, 2, '%', 0],[8.0, 70, 'kOe', 0],[95.0, 50, 'kOe', 2],[112.0, 252, 'ppm', 3],[116.0, 10, 'K', 3]

La0.5Sr0.5CoO3
###Magnetostriction in microwave synthesized La0.5Ba0.5CoO3|M. Manikandan,A. Ghosh,R. Mahendiran###
(1743262, 1743268)
 The smaller value of magnetostriction compared to theavailable data on La0.5Sr0.5CoO3 suggests that non-ferromagnetic matrix is mostlikely antiferromagnetic and it restrains the field-induced expansion offerromagnetic clusters in the microwave synthesized La0.5Ba0.5CoO3-d sample.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[416.0, 20, 'minutes', 7],[328.0, 177, 'K', 6],[292.0, 3, 'kOe', 6],[283.0, 10, 'K', 5],[237.0, 50, 'kOe', 5],[185.0, 10, 'K', 4],[170.0, 2, '%', 4],[163.0, 70, 'kOe', 4],[60.0, 50, 'kOe', 2],[43.0, 252, 'ppm', 1],[39.0, 10, 'K', 1]

La0.5Ba0.5CoO3-d
###Magnetostriction in microwave synthesized La0.5Ba0.5CoO3|M. Manikandan,A. Ghosh,R. Mahendiran###
(1743318, 1743326)
 The smaller value of magnetostriction compared to theavailable data on La0.5Sr0.5CoO3 suggests that non-ferromagnetic matrix is mostlikely antiferromagnetic and it restrains the field-induced expansion offerromagnetic clusters in the microwave synthesized La0.5Ba0.5CoO3-d sample.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[472.0, 20, 'minutes', 7],[384.0, 177, 'K', 6],[348.0, 3, 'kOe', 6],[339.0, 10, 'K', 5],[293.0, 50, 'kOe', 5],[241.0, 10, 'K', 4],[226.0, 2, '%', 4],[219.0, 70, 'kOe', 4],[116.0, 50, 'kOe', 2],[99.0, 252, 'ppm', 1],[95.0, 10, 'K', 1]

F
###Dynamical Mean-Field Theory for spin-dependent electron transport in spin-valve devices|Andrea Droghetti,Milos M. Radonjić,Liviu Chioncel,Ivan Rungger###
(1743402, 1743402)
 We present the combination of Density Functional Theory (DFT) and DynamicalMean Field Theory (DMFT) for computing the electron transmission throughtwo-terminals nanoscale devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[314.0, 1, 'eV', 5]

Cu
###Dynamical Mean-Field Theory for spin-dependent electron transport in spin-valve devices|Andrea Droghetti,Milos M. Radonjić,Liviu Chioncel,Ivan Rungger###
(1743449, 1743449)
 The method is then applied to metallicjunctions presenting alternating Cu and Co layers, which exhibit spin-dependentcharge transport and giant magnetoresistance (GMR) effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[267.0, 1, 'eV', 4]

Co
###Dynamical Mean-Field Theory for spin-dependent electron transport in spin-valve devices|Andrea Droghetti,Milos M. Radonjić,Liviu Chioncel,Ivan Rungger###
(1743453, 1743453)
 The method is then applied to metallicjunctions presenting alternating Cu and Co layers, which exhibit spin-dependentcharge transport and giant magnetoresistance (GMR) effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[263.0, 1, 'eV', 4]

F
###Dynamical Mean-Field Theory for spin-dependent electron transport in spin-valve devices|Andrea Droghetti,Milos M. Radonjić,Liviu Chioncel,Ivan Rungger###
(1743582, 1743582)
 This is mainly due to the finite lifetimeinduced by the electron-electron interaction and is directly related to theimaginary part of the computed many-body DMFT<missing VAR> self-energy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 1, 'eV', 2]

At
###Dynamical Mean-Field Theory for spin-dependent electron transport in spin-valve devices|Andrea Droghetti,Milos M. Radonjić,Liviu Chioncel,Ivan Rungger###
(1743590, 1743590)
 At the Fermi energy,where in accordance with the Fermi-liquid behavior the imaginary part of theself-energy vanishes, the suppression of the transmission is entirely due tothe shifts of the energy spectrum induced by electron correlations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 1, 'eV', 1]

Cu/Co
###Dynamical Mean-Field Theory for spin-dependent electron transport in spin-valve devices|Andrea Droghetti,Milos M. Radonjić,Liviu Chioncel,Ivan Rungger###
(1743700, 1743702)
 Based ourresults, we finally suggest that the GMR measured in Cu/Co heterostructures forelectrons with energies about 1 eV above the Fermi energy is a clearmanifestation of dynamical correlation effects.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[14.0, 1, 'eV', 0]

In
###Control of sensitivity in vortex-type magnetic tunnel junction magnetometer sensors by the pinned layer geometry|Motoki Endo,Muftah Al-Mahdawi,Mikihiko Oogane,Yasuo Ando###
(1743868, 1743868)
 In this work, we develop sensor MTJs with NiFe sensing layershaving a vortex magnetic configuration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 0.85, 'to', 2]

NiFe
###Control of sensitivity in vortex-type magnetic tunnel junction magnetometer sensors by the pinned layer geometry|Motoki Endo,Muftah Al-Mahdawi,Mikihiko Oogane,Yasuo Ando###
(1743887, 1743888)
 In this work, we develop sensor MTJs with NiFe sensing layershaving a vortex magnetic configuration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 0.85, 'to', 2]

S
###Direct observation of the perpendicular shape anisotropy and thermal stability of p-STT-MRAM nano-pillars|Trevor P. Almeida,Steven Lequeux,Alvaro Palomino,Ricardo C. Sousa,Olivier Fruchart,Ioan Lucian Prejbeanu,Bernard Dieny,Aurélien Masseboeuf,David Cooper###
(1744196, 1744196)
Direct observation of the perpendicular shape anisotropy and thermal stability of p<missing VAR>-STT-MRAM<missing VAR> nano-pillars.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[273.0, 20, 'nm', 4],[350.0, 250, 'degrees', 5]

PS
###Direct observation of the perpendicular shape anisotropy and thermal stability of p-STT-MRAM nano-pillars|Trevor P. Almeida,Steven Lequeux,Alvaro Palomino,Ricardo C. Sousa,Olivier Fruchart,Ioan Lucian Prejbeanu,Bernard Dieny,Aurélien Masseboeuf,David Cooper###
(1744217, 1744218)
 Perpendicular shape anisotropy (PSA) offers a practical solution to downscalespin-transfer torque Magnetic Random-Access Memory (STT-MRAM) beyond the sub-20nm technology node whilst retaining thermal stability of the storage layermagnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[251.0, 20, 'nm', 3],[328.0, 250, 'degrees', 4]

S
###Direct observation of the perpendicular shape anisotropy and thermal stability of p-STT-MRAM nano-pillars|Trevor P. Almeida,Steven Lequeux,Alvaro Palomino,Ricardo C. Sousa,Olivier Fruchart,Ioan Lucian Prejbeanu,Bernard Dieny,Aurélien Masseboeuf,David Cooper###
(1744250, 1744250)
 Perpendicular shape anisotropy (PSA) offers a practical solution to downscalespin-transfer torque Magnetic Random-Access Memory (STT-MRAM) beyond the sub-20nm technology node whilst retaining thermal stability of the storage layermagnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[219.0, 20, 'nm', 3],[296.0, 250, 'degrees', 4]

PS
###Direct observation of the perpendicular shape anisotropy and thermal stability of p-STT-MRAM nano-pillars|Trevor P. Almeida,Steven Lequeux,Alvaro Palomino,Ricardo C. Sousa,Olivier Fruchart,Ioan Lucian Prejbeanu,Bernard Dieny,Aurélien Masseboeuf,David Cooper###
(1744313, 1744314)
 However, our understanding of the thermomagnetic behavior ofPSA-STT-MRAM<missing VAR> is often indirect, relying on magnetoresistance measurements andmicromagnetic modelling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 20, 'nm', 2],[232.0, 250, 'degrees', 3]

S
###Direct observation of the perpendicular shape anisotropy and thermal stability of p-STT-MRAM nano-pillars|Trevor P. Almeida,Steven Lequeux,Alvaro Palomino,Ricardo C. Sousa,Olivier Fruchart,Ioan Lucian Prejbeanu,Bernard Dieny,Aurélien Masseboeuf,David Cooper###
(1744317, 1744317)
 However, our understanding of the thermomagnetic behavior ofPSA-STT-MRAM<missing VAR> is often indirect, relying on magnetoresistance measurements andmicromagnetic modelling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 20, 'nm', 2],[229.0, 250, 'degrees', 3]

FeCoB
###Direct observation of the perpendicular shape anisotropy and thermal stability of p-STT-MRAM nano-pillars|Trevor P. Almeida,Steven Lequeux,Alvaro Palomino,Ricardo C. Sousa,Olivier Fruchart,Ioan Lucian Prejbeanu,Bernard Dieny,Aurélien Masseboeuf,David Cooper###
(1744360, 1744362)
 Here, the magnetism of a FeCoB / NiFe PSA-STT-MRAM<missing VAR>nano-pillar is investigated using off-axis electron holography, providingspatially resolved magnetic information as a function of temperature, which hasbeen previously inaccessible.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 20, 'nm', 1],[184.0, 250, 'degrees', 2]

NiFe
###Direct observation of the perpendicular shape anisotropy and thermal stability of p-STT-MRAM nano-pillars|Trevor P. Almeida,Steven Lequeux,Alvaro Palomino,Ricardo C. Sousa,Olivier Fruchart,Ioan Lucian Prejbeanu,Bernard Dieny,Aurélien Masseboeuf,David Cooper###
(1744366, 1744367)
 Here, the magnetism of a FeCoB / NiFe PSA-STT-MRAM<missing VAR>nano-pillar is investigated using off-axis electron holography, providingspatially resolved magnetic information as a function of temperature, which hasbeen previously inaccessible.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 20, 'nm', 1],[179.0, 250, 'degrees', 2]

PS
###Direct observation of the perpendicular shape anisotropy and thermal stability of p-STT-MRAM nano-pillars|Trevor P. Almeida,Steven Lequeux,Alvaro Palomino,Ricardo C. Sousa,Olivier Fruchart,Ioan Lucian Prejbeanu,Bernard Dieny,Aurélien Masseboeuf,David Cooper###
(1744369, 1744370)
 Here, the magnetism of a FeCoB / NiFe PSA-STT-MRAM<missing VAR>nano-pillar is investigated using off-axis electron holography, providingspatially resolved magnetic information as a function of temperature, which hasbeen previously inaccessible.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 20, 'nm', 1],[176.0, 250, 'degrees', 2]

S
###Direct observation of the perpendicular shape anisotropy and thermal stability of p-STT-MRAM nano-pillars|Trevor P. Almeida,Steven Lequeux,Alvaro Palomino,Ricardo C. Sousa,Olivier Fruchart,Ioan Lucian Prejbeanu,Bernard Dieny,Aurélien Masseboeuf,David Cooper###
(1744373, 1744373)
 Here, the magnetism of a FeCoB / NiFe PSA-STT-MRAM<missing VAR>nano-pillar is investigated using off-axis electron holography, providingspatially resolved magnetic information as a function of temperature, which hasbeen previously inaccessible.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 20, 'nm', 1],[173.0, 250, 'degrees', 2]

NiFe
###Direct observation of the perpendicular shape anisotropy and thermal stability of p-STT-MRAM nano-pillars|Trevor P. Almeida,Steven Lequeux,Alvaro Palomino,Ricardo C. Sousa,Olivier Fruchart,Ioan Lucian Prejbeanu,Bernard Dieny,Aurélien Masseboeuf,David Cooper###
(1744455, 1744456)
 Magnetic induction maps reveal the micromagneticconfiguration of the NiFe storage layer (60 nm high, 20 nm diameter),confirming the PSA induced by its 31 aspect ratio.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 20, 'nm', 0],[90.0, 250, 'degrees', 1]

PS
###Direct observation of the perpendicular shape anisotropy and thermal stability of p-STT-MRAM nano-pillars|Trevor P. Almeida,Steven Lequeux,Alvaro Palomino,Ricardo C. Sousa,Olivier Fruchart,Ioan Lucian Prejbeanu,Bernard Dieny,Aurélien Masseboeuf,David Cooper###
(1744480, 1744481)
 Magnetic induction maps reveal the micromagneticconfiguration of the NiFe storage layer (60 nm high, 20 nm diameter),confirming the PSA induced by its 31 aspect ratio.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 20, 'nm', 0],[65.0, 250, 'degrees', 1]

In
###Direct observation of the perpendicular shape anisotropy and thermal stability of p-STT-MRAM nano-pillars|Trevor P. Almeida,Steven Lequeux,Alvaro Palomino,Ricardo C. Sousa,Olivier Fruchart,Ioan Lucian Prejbeanu,Bernard Dieny,Aurélien Masseboeuf,David Cooper###
(1744498, 1744498)
 In-situ heatingdemonstrates that the PSA of the FeCoB / NiFe composite storage layer ismaintained up to at least 250 degrees centigrade, and direct quantitativemeasurements reveal the very moderate decrease of magnetic induction withtemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 20, 'nm', 1],[48.0, 250, 'degrees', 0]

PS
###Direct observation of the perpendicular shape anisotropy and thermal stability of p-STT-MRAM nano-pillars|Trevor P. Almeida,Steven Lequeux,Alvaro Palomino,Ricardo C. Sousa,Olivier Fruchart,Ioan Lucian Prejbeanu,Bernard Dieny,Aurélien Masseboeuf,David Cooper###
(1744511, 1744512)
 In-situ heatingdemonstrates that the PSA of the FeCoB / NiFe composite storage layer ismaintained up to at least 250 degrees centigrade, and direct quantitativemeasurements reveal the very moderate decrease of magnetic induction withtemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 20, 'nm', 1],[34.0, 250, 'degrees', 0]

FeCoB
###Direct observation of the perpendicular shape anisotropy and thermal stability of p-STT-MRAM nano-pillars|Trevor P. Almeida,Steven Lequeux,Alvaro Palomino,Ricardo C. Sousa,Olivier Fruchart,Ioan Lucian Prejbeanu,Bernard Dieny,Aurélien Masseboeuf,David Cooper###
(1744519, 1744521)
 In-situ heatingdemonstrates that the PSA of the FeCoB / NiFe composite storage layer ismaintained up to at least 250 degrees centigrade, and direct quantitativemeasurements reveal the very moderate decrease of magnetic induction withtemperature.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 20, 'nm', 1],[25.0, 250, 'degrees', 0]

NiFe
###Direct observation of the perpendicular shape anisotropy and thermal stability of p-STT-MRAM nano-pillars|Trevor P. Almeida,Steven Lequeux,Alvaro Palomino,Ricardo C. Sousa,Olivier Fruchart,Ioan Lucian Prejbeanu,Bernard Dieny,Aurélien Masseboeuf,David Cooper###
(1744525, 1744526)
 In-situ heatingdemonstrates that the PSA of the FeCoB / NiFe composite storage layer ismaintained up to at least 250 degrees centigrade, and direct quantitativemeasurements reveal the very moderate decrease of magnetic induction withtemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 20, 'nm', 1],[20.0, 250, 'degrees', 0]

PS
###Direct observation of the perpendicular shape anisotropy and thermal stability of p-STT-MRAM nano-pillars|Trevor P. Almeida,Steven Lequeux,Alvaro Palomino,Ricardo C. Sousa,Olivier Fruchart,Ioan Lucian Prejbeanu,Bernard Dieny,Aurélien Masseboeuf,David Cooper###
(1744595, 1744596)
 Hence, this study shows explicitly that PSA provides significantstability in STT-MRAM<missing VAR> applications that require reliable performance over arange of operating temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 20, 'nm', 2],[49.0, 250, 'degrees', 1]

S
###Direct observation of the perpendicular shape anisotropy and thermal stability of p-STT-MRAM nano-pillars|Trevor P. Almeida,Steven Lequeux,Alvaro Palomino,Ricardo C. Sousa,Olivier Fruchart,Ioan Lucian Prejbeanu,Bernard Dieny,Aurélien Masseboeuf,David Cooper###
(1744608, 1744608)
 Hence, this study shows explicitly that PSA provides significantstability in STT-MRAM<missing VAR> applications that require reliable performance over arange of operating temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 20, 'nm', 2],[62.0, 250, 'degrees', 1]

EuIn2As2
###Field-induced Topological Hall effect in antiferromagnetic axion insulator candidate EuIn$_2$As$_2$|J. Yan,Z. Z. Jiang,R. C. Xiao,W. J. Lu,W. H. Song,X. B. Zhu,X. Luo,Y. P. Sun,M. Yamashita###
(1744669, 1744673)
Field-induced Topological Hall effect in antiferromagnetic axion insulator candidate EuIn2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuIn2As2
###Field-induced Topological Hall effect in antiferromagnetic axion insulator candidate EuIn$_2$As$_2$|J. Yan,Z. Z. Jiang,R. C. Xiao,W. J. Lu,W. H. Song,X. B. Zhu,X. Luo,Y. P. Sun,M. Yamashita###
(1744717, 1744721)
EuIn2As2 has recently been theoretically recognized as a long awaitedintrinsic antiferromagnetic bulk axion insulator.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Field-induced Topological Hall effect in antiferromagnetic axion insulator candidate EuIn$_2$As$_2$|J. Yan,Z. Z. Jiang,R. C. Xiao,W. J. Lu,W. H. Song,X. B. Zhu,X. Luo,Y. P. Sun,M. Yamashita###
(1744791, 1744791)
 In this paper, we perform the detailed magnetoresistance(MR) and Hall measurements to study the magnetotransport properties of thismaterial.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Eu
###Field-induced Topological Hall effect in antiferromagnetic axion insulator candidate EuIn$_2$As$_2$|J. Yan,Z. Z. Jiang,R. C. Xiao,W. J. Lu,W. H. Song,X. B. Zhu,X. Luo,Y. P. Sun,M. Yamashita###
(1744867, 1744867)
 We find that the transport is strongly influenced by the spinconfiguration of the Eu moments from the concomitant change in the fielddependence of the MR and that of the magnetization below the Neeltemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Field-induced Topological Hall effect in antiferromagnetic axion insulator candidate EuIn$_2$As$_2$|J. Yan,Z. Z. Jiang,R. C. Xiao,W. J. Lu,W. H. Song,X. B. Zhu,X. Luo,Y. P. Sun,M. Yamashita###
(1744909, 1744909)
 We find that the transport is strongly influenced by the spinconfiguration of the Eu moments from the concomitant change in the fielddependence of the MR and that of the magnetization below the Neeltemperature.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Field-induced Topological Hall effect in antiferromagnetic axion insulator candidate EuIn$_2$As$_2$|J. Yan,Z. Z. Jiang,R. C. Xiao,W. J. Lu,W. H. Song,X. B. Zhu,X. Luo,Y. P. Sun,M. Yamashita###
(1744931, 1744931)
 Most importantly, an anomalous Hall effect (AHE) and a largetopological Hall effect (THE) are observed.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Field-induced Topological Hall effect in antiferromagnetic axion insulator candidate EuIn$_2$As$_2$|J. Yan,Z. Z. Jiang,R. C. Xiao,W. J. Lu,W. H. Song,X. B. Zhu,X. Luo,Y. P. Sun,M. Yamashita###
(1744968, 1744968)
 We suggest that the AHE<missing VAR> isoriginated from a nonvanishing net Berry curvature due to the helical spinstructure and that the THE is attributed to the formation of a noncoplanar spintexture with a finite scalar spin chirality induced by the external magneticfield in EuIn2As2.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuIn2As2
###Field-induced Topological Hall effect in antiferromagnetic axion insulator candidate EuIn$_2$As$_2$|J. Yan,Z. Z. Jiang,R. C. Xiao,W. J. Lu,W. H. Song,X. B. Zhu,X. Luo,Y. P. Sun,M. Yamashita###
(1745059, 1745063)
 We suggest that the AHE<missing VAR> isoriginated from a nonvanishing net Berry curvature due to the helical spinstructure and that the THE is attributed to the formation of a noncoplanar spintexture with a finite scalar spin chirality induced by the external magneticfield in EuIn2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Field-induced Topological Hall effect in antiferromagnetic axion insulator candidate EuIn$_2$As$_2$|J. Yan,Z. Z. Jiang,R. C. Xiao,W. J. Lu,W. H. Song,X. B. Zhu,X. Luo,Y. P. Sun,M. Yamashita###
(1745125, 1745125)
 Inaddition, our observations give a hint to realize axion insulator states andhigh-order topological insulator states through manipulating the magnetic stateof EuIn2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuIn2As2
###Field-induced Topological Hall effect in antiferromagnetic axion insulator candidate EuIn$_2$As$_2$|J. Yan,Z. Z. Jiang,R. C. Xiao,W. J. Lu,W. H. Song,X. B. Zhu,X. Luo,Y. P. Sun,M. Yamashita###
(1745177, 1745181)
 Inaddition, our observations give a hint to realize axion insulator states andhigh-order topological insulator states through manipulating the magnetic stateof EuIn2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe4N
###Theoretical Study on Anisotropic Magnetoresistance Effects of Arbitrary Directions of Current and Magnetization for Ferromagnets: Application to Transverse Anisotropic Magnetoresistance Effect|Satoshi Kokado,Masakiyo Tsunoda###
(1745604, 1745606)
 On the basis of the above results, we also comment on theexperimental results of the TAMR effect for Fe4N.
Featurization terminated normally.
0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mg3Bi2
###Giant transverse and longitudinal magneto-thermoelectric effect in polycrystalline nodal-line semimetal Mg3Bi2|Tao Feng,Panshuo Wang,Zhijia Han,Liang Zhou,Wenqing Zhang,Qihang Liu,Weishu Liu###
(1745641, 1745644)
Giant transverse and longitudinal magneto-thermoelectric effect in polycrystalline nodal-line semimetal Mg3Bi2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[171.0, 13.5, 'K', 3],[174.0, 6, 'Tesla', 3],[202.0, 15, 'K', 4],[205.0, 13, 'Tesla', 4],[211.0, 20, 'times', 4],[313.0, 940, '%', 5]

In
###Giant transverse and longitudinal magneto-thermoelectric effect in polycrystalline nodal-line semimetal Mg3Bi2|Tao Feng,Panshuo Wang,Zhijia Han,Liang Zhou,Wenqing Zhang,Qihang Liu,Weishu Liu###
(1745697, 1745697)
 In this study, we report on thediscovery of giant transverse and longitudinal magneto-thermoelectric (MTE)effects in Mg3Bi2, which is predicted to be a type-II nodal-line semimetal inthe absence of spin-orbit coupling (SOC).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 13.5, 'K', 1],[121.0, 6, 'Tesla', 1],[149.0, 15, 'K', 2],[152.0, 13, 'Tesla', 2],[158.0, 20, 'times', 2],[260.0, 940, '%', 3]

Mg3Bi2
###Giant transverse and longitudinal magneto-thermoelectric effect in polycrystalline nodal-line semimetal Mg3Bi2|Tao Feng,Panshuo Wang,Zhijia Han,Liang Zhou,Wenqing Zhang,Qihang Liu,Weishu Liu###
(1745740, 1745743)
 In this study, we report on thediscovery of giant transverse and longitudinal magneto-thermoelectric (MTE)effects in Mg3Bi2, which is predicted to be a type-II nodal-line semimetal inthe absence of spin-orbit coupling (SOC).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 13.5, 'K', 1],[75.0, 6, 'Tesla', 1],[103.0, 15, 'K', 2],[106.0, 13, 'Tesla', 2],[112.0, 20, 'times', 2],[214.0, 940, '%', 3]

II
###Giant transverse and longitudinal magneto-thermoelectric effect in polycrystalline nodal-line semimetal Mg3Bi2|Tao Feng,Panshuo Wang,Zhijia Han,Liang Zhou,Wenqing Zhang,Qihang Liu,Weishu Liu###
(1745760, 1745761)
 In this study, we report on thediscovery of giant transverse and longitudinal magneto-thermoelectric (MTE)effects in Mg3Bi2, which is predicted to be a type-II nodal-line semimetal inthe absence of spin-orbit coupling (SOC).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 13.5, 'K', 1],[57.0, 6, 'Tesla', 1],[85.0, 15, 'K', 2],[88.0, 13, 'Tesla', 2],[94.0, 20, 'times', 2],[196.0, 940, '%', 3]

(SOC)
###Giant transverse and longitudinal magneto-thermoelectric effect in polycrystalline nodal-line semimetal Mg3Bi2|Tao Feng,Panshuo Wang,Zhijia Han,Liang Zhou,Wenqing Zhang,Qihang Liu,Weishu Liu###
(1745784, 1745788)
 In this study, we report on thediscovery of giant transverse and longitudinal magneto-thermoelectric (MTE)effects in Mg3Bi2, which is predicted to be a type-II nodal-line semimetal inthe absence of spin-orbit coupling (SOC).
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 13.5, 'K', 1],[30.0, 6, 'Tesla', 1],[58.0, 15, 'K', 2],[61.0, 13, 'Tesla', 2],[67.0, 20, 'times', 2],[169.0, 940, '%', 3]

K
###Giant transverse and longitudinal magneto-thermoelectric effect in polycrystalline nodal-line semimetal Mg3Bi2|Tao Feng,Panshuo Wang,Zhijia Han,Liang Zhou,Wenqing Zhang,Qihang Liu,Weishu Liu###
(1745810, 1745810)
 The maximum transverse power factoris 2182 muWm-1K-2 at 13.5 K and 6 Tesla.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 13.5, 'K', 0],[8.0, 6, 'Tesla', 0],[36.0, 15, 'K', 1],[39.0, 13, 'Tesla', 1],[45.0, 20, 'times', 1],[147.0, 940, '%', 2]

K
###Giant transverse and longitudinal magneto-thermoelectric effect in polycrystalline nodal-line semimetal Mg3Bi2|Tao Feng,Panshuo Wang,Zhijia Han,Liang Zhou,Wenqing Zhang,Qihang Liu,Weishu Liu###
(1745841, 1745841)
 The longitudinal power factorreaches up to 3043muWm-1K-2 at 15 K and 13 Tesla, which is 20 timeshigher than in a zero-strength magnetic field and is also comparable tostate-of-the-art MTE materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 13.5, 'K', 1],[23.0, 6, 'Tesla', 1],[5.0, 15, 'K', 0],[8.0, 13, 'Tesla', 0],[14.0, 20, 'times', 0],[116.0, 940, '%', 1]

Mg
###Giant transverse and longitudinal magneto-thermoelectric effect in polycrystalline nodal-line semimetal Mg3Bi2|Tao Feng,Panshuo Wang,Zhijia Han,Liang Zhou,Wenqing Zhang,Qihang Liu,Weishu Liu###
(1745904, 1745904)
 By compensating Mg loss in the Mg-richconditions for turning carrier concentration, the sample obtained in this workshows a large linear non-saturating magnetoresistance of 940% under a field of14 Tesla.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 13.5, 'K', 2],[86.0, 6, 'Tesla', 2],[58.0, 15, 'K', 1],[55.0, 13, 'Tesla', 1],[49.0, 20, 'times', 1],[53.0, 940, '%', 0]

Mg
###Giant transverse and longitudinal magneto-thermoelectric effect in polycrystalline nodal-line semimetal Mg3Bi2|Tao Feng,Panshuo Wang,Zhijia Han,Liang Zhou,Wenqing Zhang,Qihang Liu,Weishu Liu###
(1745912, 1745912)
 By compensating Mg loss in the Mg-richconditions for turning carrier concentration, the sample obtained in this workshows a large linear non-saturating magnetoresistance of 940% under a field of14 Tesla.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 13.5, 'K', 2],[94.0, 6, 'Tesla', 2],[66.0, 15, 'K', 1],[63.0, 13, 'Tesla', 1],[57.0, 20, 'times', 1],[45.0, 940, '%', 0]

Mg
###Giant transverse and longitudinal magneto-thermoelectric effect in polycrystalline nodal-line semimetal Mg3Bi2|Tao Feng,Panshuo Wang,Zhijia Han,Liang Zhou,Wenqing Zhang,Qihang Liu,Weishu Liu###
(1746001, 1746001)
 This is a two-orders-of-magnitude increase with respect to the normalMg-deficiency Mg3Bi2 sample.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, 13.5, 'K', 3],[183.0, 6, 'Tesla', 3],[155.0, 15, 'K', 2],[152.0, 13, 'Tesla', 2],[146.0, 20, 'times', 2],[44.0, 940, '%', 1]

Mg3Bi2
###Giant transverse and longitudinal magneto-thermoelectric effect in polycrystalline nodal-line semimetal Mg3Bi2|Tao Feng,Panshuo Wang,Zhijia Han,Liang Zhou,Wenqing Zhang,Qihang Liu,Weishu Liu###
(1746005, 1746008)
 This is a two-orders-of-magnitude increase with respect to the normalMg-deficiency Mg3Bi2 sample.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[190.0, 13.5, 'K', 3],[187.0, 6, 'Tesla', 3],[159.0, 15, 'K', 2],[156.0, 13, 'Tesla', 2],[150.0, 20, 'times', 2],[48.0, 940, '%', 1]

SOC
###Giant transverse and longitudinal magneto-thermoelectric effect in polycrystalline nodal-line semimetal Mg3Bi2|Tao Feng,Panshuo Wang,Zhijia Han,Liang Zhou,Wenqing Zhang,Qihang Liu,Weishu Liu###
(1746050, 1746052)
 Using density functional calculations, weattribute the underlying mechanism to the parent nodal-line electronicstructure without SOC and the anisotropic Fermi surface shape with SOC,highlighting the essential role of high carrier mobility and open electronorbits in moment space.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[235.0, 13.5, 'K', 4],[232.0, 6, 'Tesla', 4],[204.0, 15, 'K', 3],[201.0, 13, 'Tesla', 3],[195.0, 20, 'times', 3],[93.0, 940, '%', 2]

SOC
###Giant transverse and longitudinal magneto-thermoelectric effect in polycrystalline nodal-line semimetal Mg3Bi2|Tao Feng,Panshuo Wang,Zhijia Han,Liang Zhou,Wenqing Zhang,Qihang Liu,Weishu Liu###
(1746068, 1746070)
 Using density functional calculations, weattribute the underlying mechanism to the parent nodal-line electronicstructure without SOC and the anisotropic Fermi surface shape with SOC,highlighting the essential role of high carrier mobility and open electronorbits in moment space.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[253.0, 13.5, 'K', 4],[250.0, 6, 'Tesla', 4],[222.0, 15, 'K', 3],[219.0, 13, 'Tesla', 3],[213.0, 20, 'times', 3],[111.0, 940, '%', 2]

In
###Electron-Electron Interaction and Weak Antilocalization Effect in a Transition Metal Dichalcogenide Superconductor|Chushan Li,Mebrouka Boubeche,Lingyong Zeng,Yi Ji,Qixuan Li,Donghui Guo,Qizhong Zhu,Dingyong Zhong,Huixia Luo,Huichao Wang###
(1746196, 1746196)
 In disordered transition-metal dichalcogenide (TMD) superconductor, both thestrong spin-orbit coupling (SOC) and disorder show remarkable effects onsuperconductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 1, 'T', 2],[415.0, 1, 'T', 8]

(SOC)
###Electron-Electron Interaction and Weak Antilocalization Effect in a Transition Metal Dichalcogenide Superconductor|Chushan Li,Mebrouka Boubeche,Lingyong Zeng,Yi Ji,Qixuan Li,Donghui Guo,Qizhong Zhu,Dingyong Zhong,Huixia Luo,Huichao Wang###
(1746228, 1746232)
 In disordered transition-metal dichalcogenide (TMD) superconductor, both thestrong spin-orbit coupling (SOC) and disorder show remarkable effects onsuperconductivity.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 1, 'T', 2],[379.0, 1, 'T', 8]

SOC
###Electron-Electron Interaction and Weak Antilocalization Effect in a Transition Metal Dichalcogenide Superconductor|Chushan Li,Mebrouka Boubeche,Lingyong Zeng,Yi Ji,Qixuan Li,Donghui Guo,Qizhong Zhu,Dingyong Zhong,Huixia Luo,Huichao Wang###
(1746259, 1746261)
 However, the features of SOC and disorder were rarelydetected directly.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 1, 'T', 1],[350.0, 1, 'T', 7]

SOC
###Electron-Electron Interaction and Weak Antilocalization Effect in a Transition Metal Dichalcogenide Superconductor|Chushan Li,Mebrouka Boubeche,Lingyong Zeng,Yi Ji,Qixuan Li,Donghui Guo,Qizhong Zhu,Dingyong Zhong,Huixia Luo,Huichao Wang###
(1746302, 1746304)
 Here we report the quantum transport behaviors arising fromthe interplay of SOC and disorder in the TMD superconductor 1T-NbSeTe.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 1, 'T', 0],[307.0, 1, 'T', 6]

NbSeTe
###Electron-Electron Interaction and Weak Antilocalization Effect in a Transition Metal Dichalcogenide Superconductor|Chushan Li,Mebrouka Boubeche,Lingyong Zeng,Yi Ji,Qixuan Li,Donghui Guo,Qizhong Zhu,Dingyong Zhong,Huixia Luo,Huichao Wang###
(1746321, 1746323)
 Here we report the quantum transport behaviors arising fromthe interplay of SOC and disorder in the TMD superconductor 1T-NbSeTe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 1, 'T', 0],[288.0, 1, 'T', 6]

H1
###Electron-Electron Interaction and Weak Antilocalization Effect in a Transition Metal Dichalcogenide Superconductor|Chushan Li,Mebrouka Boubeche,Lingyong Zeng,Yi Ji,Qixuan Li,Donghui Guo,Qizhong Zhu,Dingyong Zhong,Huixia Luo,Huichao Wang###
(1746406, 1746407)
 The magnetoresistance (MR) at low temperatures shows a H1/2dependence at high magnetic fields.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 1, 'T', 2],[204.0, 1, 'T', 4]

I
###Electron-Electron Interaction and Weak Antilocalization Effect in a Transition Metal Dichalcogenide Superconductor|Chushan Li,Mebrouka Boubeche,Lingyong Zeng,Yi Ji,Qixuan Li,Donghui Guo,Qizhong Zhu,Dingyong Zhong,Huixia Luo,Huichao Wang###
(1746449, 1746449)
 The characteristics are in good agreementwith the electron-electron interaction (EEI) in a disordered conductor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 1, 'T', 3],[162.0, 1, 'T', 3]

In
###Electron-Electron Interaction and Weak Antilocalization Effect in a Transition Metal Dichalcogenide Superconductor|Chushan Li,Mebrouka Boubeche,Lingyong Zeng,Yi Ji,Qixuan Li,Donghui Guo,Qizhong Zhu,Dingyong Zhong,Huixia Luo,Huichao Wang###
(1746461, 1746461)
 Inaddition, the upturn changes and MR at low magnetic fields suggest thecontribution of weak antilocalization (WAL) effect arising from the strong SOCin the material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 1, 'T', 4],[150.0, 1, 'T', 2]

W
###Electron-Electron Interaction and Weak Antilocalization Effect in a Transition Metal Dichalcogenide Superconductor|Chushan Li,Mebrouka Boubeche,Lingyong Zeng,Yi Ji,Qixuan Li,Donghui Guo,Qizhong Zhu,Dingyong Zhong,Huixia Luo,Huichao Wang###
(1746500, 1746500)
 Inaddition, the upturn changes and MR at low magnetic fields suggest thecontribution of weak antilocalization (WAL) effect arising from the strong SOCin the material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 1, 'T', 4],[111.0, 1, 'T', 2]

SOC
###Electron-Electron Interaction and Weak Antilocalization Effect in a Transition Metal Dichalcogenide Superconductor|Chushan Li,Mebrouka Boubeche,Lingyong Zeng,Yi Ji,Qixuan Li,Donghui Guo,Qizhong Zhu,Dingyong Zhong,Huixia Luo,Huichao Wang###
(1746515, 1746517)
 Inaddition, the upturn changes and MR at low magnetic fields suggest thecontribution of weak antilocalization (WAL) effect arising from the strong SOCin the material.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[196.0, 1, 'T', 4],[94.0, 1, 'T', 2]

I
###Electron-Electron Interaction and Weak Antilocalization Effect in a Transition Metal Dichalcogenide Superconductor|Chushan Li,Mebrouka Boubeche,Lingyong Zeng,Yi Ji,Qixuan Li,Donghui Guo,Qizhong Zhu,Dingyong Zhong,Huixia Luo,Huichao Wang###
(1746589, 1746589)
 The results reveal the disorder enhanced EEIand the strong SOC induced WAL<missing VAR> effect in 1T-NbSeTe, which illustrate theresistivity minimum in the widely studied doped superconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[270.0, 1, 'T', 6],[22.0, 1, 'T', 0]

SOC
###Electron-Electron Interaction and Weak Antilocalization Effect in a Transition Metal Dichalcogenide Superconductor|Chushan Li,Mebrouka Boubeche,Lingyong Zeng,Yi Ji,Qixuan Li,Donghui Guo,Qizhong Zhu,Dingyong Zhong,Huixia Luo,Huichao Wang###
(1746598, 1746600)
 The results reveal the disorder enhanced EEIand the strong SOC induced WAL<missing VAR> effect in 1T-NbSeTe, which illustrate theresistivity minimum in the widely studied doped superconductors.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[279.0, 1, 'T', 6],[11.0, 1, 'T', 0]

W
###Electron-Electron Interaction and Weak Antilocalization Effect in a Transition Metal Dichalcogenide Superconductor|Chushan Li,Mebrouka Boubeche,Lingyong Zeng,Yi Ji,Qixuan Li,Donghui Guo,Qizhong Zhu,Dingyong Zhong,Huixia Luo,Huichao Wang###
(1746604, 1746604)
 The results reveal the disorder enhanced EEIand the strong SOC induced WAL<missing VAR> effect in 1T-NbSeTe, which illustrate theresistivity minimum in the widely studied doped superconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[285.0, 1, 'T', 6],[7.0, 1, 'T', 0]

NbSeTe
###Electron-Electron Interaction and Weak Antilocalization Effect in a Transition Metal Dichalcogenide Superconductor|Chushan Li,Mebrouka Boubeche,Lingyong Zeng,Yi Ji,Qixuan Li,Donghui Guo,Qizhong Zhu,Dingyong Zhong,Huixia Luo,Huichao Wang###
(1746613, 1746615)
 The results reveal the disorder enhanced EEIand the strong SOC induced WAL<missing VAR> effect in 1T-NbSeTe, which illustrate theresistivity minimum in the widely studied doped superconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[294.0, 1, 'T', 6],[2.0, 1, 'T', 0]

S
###Spin Hall magnetoresistance effect from a disordered interface|Sara Catalano,Juan M. Gomez-Perez,M. Xochitl Aguilar-Pujol,Andrey Chuvilin,Marco Gobbi,Luis E. Hueso,Fèlix Casanova###
(1746702, 1746702)
 The Spin Hall magnetoresistance (SMR) emerged as a reference tool toinvestigate the magnetic properties of materials with an all-electrical set-up.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin Hall magnetoresistance effect from a disordered interface|Sara Catalano,Juan M. Gomez-Perez,M. Xochitl Aguilar-Pujol,Andrey Chuvilin,Marco Gobbi,Luis E. Hueso,Fèlix Casanova###
(1746858, 1746858)
 However,realistic surfaces can be affected by defects and disorder, which may result inunexpected artifacts in the SMR, rather than the sole appearance of electricalnoise.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin Hall magnetoresistance effect from a disordered interface|Sara Catalano,Juan M. Gomez-Perez,M. Xochitl Aguilar-Pujol,Andrey Chuvilin,Marco Gobbi,Luis E. Hueso,Fèlix Casanova###
(1746890, 1746890)
 Here, we study the SMR response of heterostructures combining a platinum(Pt) thin film with the Van der Waals antiferromagnet MnPSe3 and observe arobust SMR-like signal, which turns out to originate from the presence ofstrong interfacial disorder in the system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(Pt)
###Spin Hall magnetoresistance effect from a disordered interface|Sara Catalano,Juan M. Gomez-Perez,M. Xochitl Aguilar-Pujol,Andrey Chuvilin,Marco Gobbi,Luis E. Hueso,Fèlix Casanova###
(1746907, 1746909)
 Here, we study the SMR response of heterostructures combining a platinum(Pt) thin film with the Van der Waals antiferromagnet MnPSe3 and observe arobust SMR-like signal, which turns out to originate from the presence ofstrong interfacial disorder in the system.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnPSe3
###Spin Hall magnetoresistance effect from a disordered interface|Sara Catalano,Juan M. Gomez-Perez,M. Xochitl Aguilar-Pujol,Andrey Chuvilin,Marco Gobbi,Luis E. Hueso,Fèlix Casanova###
(1746927, 1746930)
 Here, we study the SMR response of heterostructures combining a platinum(Pt) thin film with the Van der Waals antiferromagnet MnPSe3 and observe arobust SMR-like signal, which turns out to originate from the presence ofstrong interfacial disorder in the system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin Hall magnetoresistance effect from a disordered interface|Sara Catalano,Juan M. Gomez-Perez,M. Xochitl Aguilar-Pujol,Andrey Chuvilin,Marco Gobbi,Luis E. Hueso,Fèlix Casanova###
(1746941, 1746941)
 Here, we study the SMR response of heterostructures combining a platinum(Pt) thin film with the Van der Waals antiferromagnet MnPSe3 and observe arobust SMR-like signal, which turns out to originate from the presence ofstrong interfacial disorder in the system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnPSe3
###Spin Hall magnetoresistance effect from a disordered interface|Sara Catalano,Juan M. Gomez-Perez,M. Xochitl Aguilar-Pujol,Andrey Chuvilin,Marco Gobbi,Luis E. Hueso,Fèlix Casanova###
(1747009, 1747012)
 We use transmission electronmicroscopy (TEM) to characterize the interface between MnPSe3 and Pt, revealingthe formation of a few-nanometer-thick platinum-chalcogen amorphous layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Spin Hall magnetoresistance effect from a disordered interface|Sara Catalano,Juan M. Gomez-Perez,M. Xochitl Aguilar-Pujol,Andrey Chuvilin,Marco Gobbi,Luis E. Hueso,Fèlix Casanova###
(1747016, 1747016)
 We use transmission electronmicroscopy (TEM) to characterize the interface between MnPSe3 and Pt, revealingthe formation of a few-nanometer-thick platinum-chalcogen amorphous layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt/MnPSe3
###Spin Hall magnetoresistance effect from a disordered interface|Sara Catalano,Juan M. Gomez-Perez,M. Xochitl Aguilar-Pujol,Andrey Chuvilin,Marco Gobbi,Luis E. Hueso,Fèlix Casanova###
(1747091, 1747096)
 Theanalysis of the transport and TEM measurements suggests that the signal arisesfrom a disordered magnetic system formed at the Pt/MnPSe3 interface, washingout the interaction between the spins of the Pt electrons and the MnPSe3magnetic lattice.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Pt
###Spin Hall magnetoresistance effect from a disordered interface|Sara Catalano,Juan M. Gomez-Perez,M. Xochitl Aguilar-Pujol,Andrey Chuvilin,Marco Gobbi,Luis E. Hueso,Fèlix Casanova###
(1747120, 1747120)
 Theanalysis of the transport and TEM measurements suggests that the signal arisesfrom a disordered magnetic system formed at the Pt/MnPSe3 interface, washingout the interaction between the spins of the Pt electrons and the MnPSe3magnetic lattice.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnPSe3
###Spin Hall magnetoresistance effect from a disordered interface|Sara Catalano,Juan M. Gomez-Perez,M. Xochitl Aguilar-Pujol,Andrey Chuvilin,Marco Gobbi,Luis E. Hueso,Fèlix Casanova###
(1747128, 1747131)
 Theanalysis of the transport and TEM measurements suggests that the signal arisesfrom a disordered magnetic system formed at the Pt/MnPSe3 interface, washingout the interaction between the spins of the Pt electrons and the MnPSe3magnetic lattice.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin Hall magnetoresistance effect from a disordered interface|Sara Catalano,Juan M. Gomez-Perez,M. Xochitl Aguilar-Pujol,Andrey Chuvilin,Marco Gobbi,Luis E. Hueso,Fèlix Casanova###
(1747164, 1747164)
 Our results show that damaged interfaces can yield animportant contribution to SMR, questioning a widespread assumption on the roleof disorder in such measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Cooperative effect of electrons spin polarization in a hybrid nanostructure of a magnetic thin film with adsorbed chiral molecules studied with non-spin-polarized scanning tunneling microscopy|Nguyen T. N. Ha,L. Rasabathina,O. Hellwig,A. Sharma,G. Salvan,S. Yochelis,Y. Paltiel,L. T. Baczewski,C. Tegenkamp###
(1747263, 1747263)
 Polyalanine molecules (PA) with an alpha-helix conformation gatheredrecently a lot of interest as the propagation of electrons through the chiralbackbone structure comes along with spin polarization of the transmittedelectrons.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Cooperative effect of electrons spin polarization in a hybrid nanostructure of a magnetic thin film with adsorbed chiral molecules studied with non-spin-polarized scanning tunneling microscopy|Nguyen T. N. Ha,L. Rasabathina,O. Hellwig,A. Sharma,G. Salvan,S. Yochelis,Y. Paltiel,L. T. Baczewski,C. Tegenkamp###
(1747355, 1747355)
 By means of scanning tunneling microscopy and spectroscopy atambient conditions, PA molecules adsorbed on surfaces of epitaxial magneticAl2O3/Pt/Au/Co/Au nanostructures with perpendicular anisotropy were studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Al2O3/Pt/Au/Co/Au
###Cooperative effect of electrons spin polarization in a hybrid nanostructure of a magnetic thin film with adsorbed chiral molecules studied with non-spin-polarized scanning tunneling microscopy|Nguyen T. N. Ha,L. Rasabathina,O. Hellwig,A. Sharma,G. Salvan,S. Yochelis,Y. Paltiel,L. T. Baczewski,C. Tegenkamp###
(1747373, 1747384)
 By means of scanning tunneling microscopy and spectroscopy atambient conditions, PA molecules adsorbed on surfaces of epitaxial magneticAl2O3/Pt/Au/Co/Au nanostructures with perpendicular anisotropy were studied.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

P
###Cooperative effect of electrons spin polarization in a hybrid nanostructure of a magnetic thin film with adsorbed chiral molecules studied with non-spin-polarized scanning tunneling microscopy|Nguyen T. N. Ha,L. Rasabathina,O. Hellwig,A. Sharma,G. Salvan,S. Yochelis,Y. Paltiel,L. T. Baczewski,C. Tegenkamp###
(1747411, 1747411)
Thereby, a correlation between the PA molecules ordering at the surface withthe electron tunneling across this hybrid system as a function of the substratemagnetization orientation as well as the coverage density and helicity of thewas observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Cooperative effect of electrons spin polarization in a hybrid nanostructure of a magnetic thin film with adsorbed chiral molecules studied with non-spin-polarized scanning tunneling microscopy|Nguyen T. N. Ha,L. Rasabathina,O. Hellwig,A. Sharma,G. Salvan,S. Yochelis,Y. Paltiel,L. T. Baczewski,C. Tegenkamp###
(1747495, 1747495)
 The highest spin polarization values, P, were found forwell-ordered self-assembled monolayers and with a defined chemical coupling ofthe molecules to the magnetic substrate surface, showing that the currentinduced spin selectivity is a cooperative effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Cooperative effect of electrons spin polarization in a hybrid nanostructure of a magnetic thin film with adsorbed chiral molecules studied with non-spin-polarized scanning tunneling microscopy|Nguyen T. N. Ha,L. Rasabathina,O. Hellwig,A. Sharma,G. Salvan,S. Yochelis,Y. Paltiel,L. T. Baczewski,C. Tegenkamp###
(1747572, 1747572)
 Thereby, P deduced from theelectron transmission along unoccupied molecular orbitals of the helicalmolecules is larger as compared to values derived from the occupied molecularorbitals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Cooperative effect of electrons spin polarization in a hybrid nanostructure of a magnetic thin film with adsorbed chiral molecules studied with non-spin-polarized scanning tunneling microscopy|Nguyen T. N. Ha,L. Rasabathina,O. Hellwig,A. Sharma,G. Salvan,S. Yochelis,Y. Paltiel,L. T. Baczewski,C. Tegenkamp###
(1747660, 1747660)
 Apparently, the larger orbital overlap is resulting in a higherelectron mobility yielding a higher P value.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Cooperative effect of electrons spin polarization in a hybrid nanostructure of a magnetic thin film with adsorbed chiral molecules studied with non-spin-polarized scanning tunneling microscopy|Nguyen T. N. Ha,L. Rasabathina,O. Hellwig,A. Sharma,G. Salvan,S. Yochelis,Y. Paltiel,L. T. Baczewski,C. Tegenkamp###
(1747680, 1747680)
 By switching the magnetizationdirection of the Co-layer, it was demonstrated that the non-spin-polarized STMcan be used to study chiral molecules with a sub-molecular resolution, todetect properties of buried magnetic layers and to detect the spin polarizationof the molecules from the change of the magnetoresistance of such hybridstructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Cooperative effect of electrons spin polarization in a hybrid nanostructure of a magnetic thin film with adsorbed chiral molecules studied with non-spin-polarized scanning tunneling microscopy|Nguyen T. N. Ha,L. Rasabathina,O. Hellwig,A. Sharma,G. Salvan,S. Yochelis,Y. Paltiel,L. T. Baczewski,C. Tegenkamp###
(1747701, 1747701)
 By switching the magnetizationdirection of the Co-layer, it was demonstrated that the non-spin-polarized STMcan be used to study chiral molecules with a sub-molecular resolution, todetect properties of buried magnetic layers and to detect the spin polarizationof the molecules from the change of the magnetoresistance of such hybridstructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuZn2As2
###Anisotropy of the magnetic and transport properties in EuZn$_2$As$_2$|Zhi-Cheng Wang,Emily Been,Jonathan Gaudet,Gadeer Matook A. Alqasseri,Kyle Fruhling,Xiaohan Yao,Uwe Stuhr,Qinqing Zhu,Zhi Ren,Yi Cui,Chunjing Jia,Brian Moritz,Sugata Chowdhury,Thomas Devereaux,Fazel Tafti###
(1747811, 1747815)
Anisotropy of the magnetic and transport properties in EuZn2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[250.0, 19.6, 'K', 4]

C
###Anisotropy of the magnetic and transport properties in EuZn$_2$As$_2$|Zhi-Cheng Wang,Emily Been,Jonathan Gaudet,Gadeer Matook A. Alqasseri,Kyle Fruhling,Xiaohan Yao,Uwe Stuhr,Qinqing Zhu,Zhi Ren,Yi Cui,Chunjing Jia,Brian Moritz,Sugata Chowdhury,Thomas Devereaux,Fazel Tafti###
(1747846, 1747846)
 Several recent studies have shown that the anisotropy in the magneticstructure of E<missing VAR>CA plays a significant role in stabilizing the Weyl nodes.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[219.0, 19.6, 'K', 3]

EuZn2As2
###Anisotropy of the magnetic and transport properties in EuZn$_2$As$_2$|Zhi-Cheng Wang,Emily Been,Jonathan Gaudet,Gadeer Matook A. Alqasseri,Kyle Fruhling,Xiaohan Yao,Uwe Stuhr,Qinqing Zhu,Zhi Ren,Yi Cui,Chunjing Jia,Brian Moritz,Sugata Chowdhury,Thomas Devereaux,Fazel Tafti###
(1747903, 1747907)
 Toinvestigate the relationship between magnetic anisotropy and Weyl physics, wepresent a comparative study between EuZn2As2 and EuCd2As2 that areisostructural but with different magnetic anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 19.6, 'K', 2]

EuCd2As2
###Anisotropy of the magnetic and transport properties in EuZn$_2$As$_2$|Zhi-Cheng Wang,Emily Been,Jonathan Gaudet,Gadeer Matook A. Alqasseri,Kyle Fruhling,Xiaohan Yao,Uwe Stuhr,Qinqing Zhu,Zhi Ren,Yi Cui,Chunjing Jia,Brian Moritz,Sugata Chowdhury,Thomas Devereaux,Fazel Tafti###
(1747911, 1747915)
 Toinvestigate the relationship between magnetic anisotropy and Weyl physics, wepresent a comparative study between EuZn2As2 and EuCd2As2 that areisostructural but with different magnetic anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 19.6, 'K', 2]

EuZn2As2
###Anisotropy of the magnetic and transport properties in EuZn$_2$As$_2$|Zhi-Cheng Wang,Emily Been,Jonathan Gaudet,Gadeer Matook A. Alqasseri,Kyle Fruhling,Xiaohan Yao,Uwe Stuhr,Qinqing Zhu,Zhi Ren,Yi Cui,Chunjing Jia,Brian Moritz,Sugata Chowdhury,Thomas Devereaux,Fazel Tafti###
(1747969, 1747973)
 We performed structuralanalysis, electronic transport, and magnetization experiments onmillimeter-sized single crystals of EuZn2As2, and compared the results tothose of EuCd2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 19.6, 'K', 1]

EuCd2As2
###Anisotropy of the magnetic and transport properties in EuZn$_2$As$_2$|Zhi-Cheng Wang,Emily Been,Jonathan Gaudet,Gadeer Matook A. Alqasseri,Kyle Fruhling,Xiaohan Yao,Uwe Stuhr,Qinqing Zhu,Zhi Ren,Yi Cui,Chunjing Jia,Brian Moritz,Sugata Chowdhury,Thomas Devereaux,Fazel Tafti###
(1747991, 1747995)
 We performed structuralanalysis, electronic transport, and magnetization experiments onmillimeter-sized single crystals of EuZn2As2, and compared the results tothose of EuCd2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 19.6, 'K', 1]

EuZn2As2
###Anisotropy of the magnetic and transport properties in EuZn$_2$As$_2$|Zhi-Cheng Wang,Emily Been,Jonathan Gaudet,Gadeer Matook A. Alqasseri,Kyle Fruhling,Xiaohan Yao,Uwe Stuhr,Qinqing Zhu,Zhi Ren,Yi Cui,Chunjing Jia,Brian Moritz,Sugata Chowdhury,Thomas Devereaux,Fazel Tafti###
(1748035, 1748039)
 By combining the first principle calculations andneutron diffraction experiment, we identify the magnetic ground state ofEuZn2As2 as A-type antiferromagnetic order with a transition temperature(T<missing VAR>mathrmN  19.6 K) twice that of EuCd2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 19.6, 'K', 0]

N
###Anisotropy of the magnetic and transport properties in EuZn$_2$As$_2$|Zhi-Cheng Wang,Emily Been,Jonathan Gaudet,Gadeer Matook A. Alqasseri,Kyle Fruhling,Xiaohan Yao,Uwe Stuhr,Qinqing Zhu,Zhi Ren,Yi Cui,Chunjing Jia,Brian Moritz,Sugata Chowdhury,Thomas Devereaux,Fazel Tafti###
(1748063, 1748063)
 By combining the first principle calculations andneutron diffraction experiment, we identify the magnetic ground state ofEuZn2As2 as A-type antiferromagnetic order with a transition temperature(T<missing VAR>mathrmN  19.6 K) twice that of EuCd2As2.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 19.6, 'K', 0]

EuCd2As2
###Anisotropy of the magnetic and transport properties in EuZn$_2$As$_2$|Zhi-Cheng Wang,Emily Been,Jonathan Gaudet,Gadeer Matook A. Alqasseri,Kyle Fruhling,Xiaohan Yao,Uwe Stuhr,Qinqing Zhu,Zhi Ren,Yi Cui,Chunjing Jia,Brian Moritz,Sugata Chowdhury,Thomas Devereaux,Fazel Tafti###
(1748074, 1748078)
 By combining the first principle calculations andneutron diffraction experiment, we identify the magnetic ground state ofEuZn2As2 as A-type antiferromagnetic order with a transition temperature(T<missing VAR>mathrmN  19.6 K) twice that of EuCd2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 19.6, 'K', 0]

EuCd2As2
###Anisotropy of the magnetic and transport properties in EuZn$_2$As$_2$|Zhi-Cheng Wang,Emily Been,Jonathan Gaudet,Gadeer Matook A. Alqasseri,Kyle Fruhling,Xiaohan Yao,Uwe Stuhr,Qinqing Zhu,Zhi Ren,Yi Cui,Chunjing Jia,Brian Moritz,Sugata Chowdhury,Thomas Devereaux,Fazel Tafti###
(1748083, 1748087)
 Like EuCd2As2,the negative magnetoresistance of EuZn2As2 is observed after suppressingthe resistivity peak at T<missing VAR>mathrmN with increasing fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 19.6, 'K', 1]

EuZn2As2
###Anisotropy of the magnetic and transport properties in EuZn$_2$As$_2$|Zhi-Cheng Wang,Emily Been,Jonathan Gaudet,Gadeer Matook A. Alqasseri,Kyle Fruhling,Xiaohan Yao,Uwe Stuhr,Qinqing Zhu,Zhi Ren,Yi Cui,Chunjing Jia,Brian Moritz,Sugata Chowdhury,Thomas Devereaux,Fazel Tafti###
(1748099, 1748103)
 Like EuCd2As2,the negative magnetoresistance of EuZn2As2 is observed after suppressingthe resistivity peak at T<missing VAR>mathrmN with increasing fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 19.6, 'K', 1]

N
###Anisotropy of the magnetic and transport properties in EuZn$_2$As$_2$|Zhi-Cheng Wang,Emily Been,Jonathan Gaudet,Gadeer Matook A. Alqasseri,Kyle Fruhling,Xiaohan Yao,Uwe Stuhr,Qinqing Zhu,Zhi Ren,Yi Cui,Chunjing Jia,Brian Moritz,Sugata Chowdhury,Thomas Devereaux,Fazel Tafti###
(1748124, 1748124)
 Like EuCd2As2,the negative magnetoresistance of EuZn2As2 is observed after suppressingthe resistivity peak at T<missing VAR>mathrmN with increasing fields.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 19.6, 'K', 1]

EuZn2As2
###Anisotropy of the magnetic and transport properties in EuZn$_2$As$_2$|Zhi-Cheng Wang,Emily Been,Jonathan Gaudet,Gadeer Matook A. Alqasseri,Kyle Fruhling,Xiaohan Yao,Uwe Stuhr,Qinqing Zhu,Zhi Ren,Yi Cui,Chunjing Jia,Brian Moritz,Sugata Chowdhury,Thomas Devereaux,Fazel Tafti###
(1748160, 1748164)
 However, theanisotropy in both transport and magnetization are much reduced inEuZn2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 19.6, 'K', 2]

Eu
###Anisotropy of the magnetic and transport properties in EuZn$_2$As$_2$|Zhi-Cheng Wang,Emily Been,Jonathan Gaudet,Gadeer Matook A. Alqasseri,Kyle Fruhling,Xiaohan Yao,Uwe Stuhr,Qinqing Zhu,Zhi Ren,Yi Cui,Chunjing Jia,Brian Moritz,Sugata Chowdhury,Thomas Devereaux,Fazel Tafti###
(1748212, 1748212)
 The difference could be ascribed to the weaker spin-orbitcoupling, more localized d<missing VAR>-orbitals, and a larger contribution from the Eus<missing VAR>-orbitals in the zinc compound, as suggested by the electronic bandcalculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 19.6, 'K', 3]

EuZn2As2
###Anisotropy of the magnetic and transport properties in EuZn$_2$As$_2$|Zhi-Cheng Wang,Emily Been,Jonathan Gaudet,Gadeer Matook A. Alqasseri,Kyle Fruhling,Xiaohan Yao,Uwe Stuhr,Qinqing Zhu,Zhi Ren,Yi Cui,Chunjing Jia,Brian Moritz,Sugata Chowdhury,Thomas Devereaux,Fazel Tafti###
(1748287, 1748291)
 The same band structure effect could be also responsible for theobservation of a smaller non-linear anomalous Hall effect in EuZn2As2compared to EuCd2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[222.0, 19.6, 'K', 4]

EuCd2As2
###Anisotropy of the magnetic and transport properties in EuZn$_2$As$_2$|Zhi-Cheng Wang,Emily Been,Jonathan Gaudet,Gadeer Matook A. Alqasseri,Kyle Fruhling,Xiaohan Yao,Uwe Stuhr,Qinqing Zhu,Zhi Ren,Yi Cui,Chunjing Jia,Brian Moritz,Sugata Chowdhury,Thomas Devereaux,Fazel Tafti###
(1748298, 1748302)
 The same band structure effect could be also responsible for theobservation of a smaller non-linear anomalous Hall effect in EuZn2As2compared to EuCd2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[233.0, 19.6, 'K', 4]

CrSBr
###Quasi 1D electronic transport in a 2D magnetic semiconductor|Fan Wu,Ignacio Gutiérrez-Lezama,Sara A. Lopéz-Paz,Marco Gibertini,Kenji Watanabe,Takashi Taniguchi,Fabian O. von Rohr,Nicolas Ubrig,Alberto F. Morpurgo###
(1748346, 1748348)
 We investigate electronic transport through exfoliated multilayers of CrSBr,a 2D semiconductor that is attracting attention because of its magneticproperties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 1, 'D', 1],[23.0, 2, 'D', 1],[5.0, 2, 'D', 0],[280.0, 2, 'D', 4],[309.0, 1, 'D', 5],[382.0, 1, 'D', 5],[392.0, 2, 'D', 5],[415.0, 2, 'D', 6],[426.0, 1, 'D', 6]

In
###Quasi 1D electronic transport in a 2D magnetic semiconductor|Fan Wu,Ignacio Gutiérrez-Lezama,Sara A. Lopéz-Paz,Marco Gibertini,Kenji Watanabe,Takashi Taniguchi,Fabian O. von Rohr,Nicolas Ubrig,Alberto F. Morpurgo###
(1748436, 1748436)
 In particular,we observe a qualitatively different dependence of the conductivitiessigmaa and sigmab<missing VAR> on temperature and gate voltage, accompanied byorders of magnitude differences in their values (sigmab<missing VAR>/sigmaa approx3cdot102-105 at low temperature and large negative gate voltage).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 1, 'D', 3],[113.0, 2, 'D', 3],[83.0, 2, 'D', 2],[192.0, 2, 'D', 2],[221.0, 1, 'D', 3],[294.0, 1, 'D', 3],[304.0, 2, 'D', 3],[327.0, 2, 'D', 4],[338.0, 1, 'D', 4]

CrSBr
###Quasi 1D electronic transport in a 2D magnetic semiconductor|Fan Wu,Ignacio Gutiérrez-Lezama,Sara A. Lopéz-Paz,Marco Gibertini,Kenji Watanabe,Takashi Taniguchi,Fabian O. von Rohr,Nicolas Ubrig,Alberto F. Morpurgo###
(1748695, 1748697)
 The observed phenomenology -- together with unambiguoussignatures of a 1D van Hove singularity that we detect in energy resolvedphotocurrent measurements -- indicate that electronic transport through CrSBrmultilayers is better interpreted by considering the system as formed by weaklyand incoherently coupled 1D wires, than by conventional 2D band transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[381.0, 1, 'D', 6],[372.0, 2, 'D', 6],[342.0, 2, 'D', 5],[67.0, 2, 'D', 1],[38.0, 1, 'D', 0],[33.0, 1, 'D', 0],[43.0, 2, 'D', 0],[66.0, 2, 'D', 1],[77.0, 1, 'D', 1]

CrSBr
###Quasi 1D electronic transport in a 2D magnetic semiconductor|Fan Wu,Ignacio Gutiérrez-Lezama,Sara A. Lopéz-Paz,Marco Gibertini,Kenji Watanabe,Takashi Taniguchi,Fabian O. von Rohr,Nicolas Ubrig,Alberto F. Morpurgo###
(1748754, 1748756)
 Weconclude that CrSBr is the first 2D semiconductor to show distinctly quasi 1Delectronic transport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[440.0, 1, 'D', 7],[431.0, 2, 'D', 7],[401.0, 2, 'D', 6],[126.0, 2, 'D', 2],[97.0, 1, 'D', 1],[24.0, 1, 'D', 1],[14.0, 2, 'D', 1],[7.0, 2, 'D', 0],[18.0, 1, 'D', 0]

BN
###Magnetism and Interlayer Bonding in Pores of Bernal-Stacked Hexagonal Boron Nitride|Mehmet Dogan,Marvin L. Cohen###
(1748825, 1748826)
 When single-layer h<missing VAR>-BN is subjected to a high-energy electron beam,triangular pores with nitrogen edges are formed.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BN
###Magnetism and Interlayer Bonding in Pores of Bernal-Stacked Hexagonal Boron Nitride|Mehmet Dogan,Marvin L. Cohen###
(1748943, 1748944)
 Moreover, in the Bernal-stacked h<missing VAR>-BN (AB-h<missing VAR>-BN), multilayer pores withparallel edges can be created, which is not possible in the commonly fabricatedmultilayer AA-h<missing VAR>-BN.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Magnetism and Interlayer Bonding in Pores of Bernal-Stacked Hexagonal Boron Nitride|Mehmet Dogan,Marvin L. Cohen###
(1748948, 1748948)
 Moreover, in the Bernal-stacked h<missing VAR>-BN (AB-h<missing VAR>-BN), multilayer pores withparallel edges can be created, which is not possible in the commonly fabricatedmultilayer AA-h<missing VAR>-BN.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Magnetism and Interlayer Bonding in Pores of Bernal-Stacked Hexagonal Boron Nitride|Mehmet Dogan,Marvin L. Cohen###
(1748953, 1748953)
 Moreover, in the Bernal-stacked h<missing VAR>-BN (AB-h<missing VAR>-BN), multilayer pores withparallel edges can be created, which is not possible in the commonly fabricatedmultilayer AA-h<missing VAR>-BN.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BN
###Magnetism and Interlayer Bonding in Pores of Bernal-Stacked Hexagonal Boron Nitride|Mehmet Dogan,Marvin L. Cohen###
(1748999, 1749000)
 Moreover, in the Bernal-stacked h<missing VAR>-BN (AB-h<missing VAR>-BN), multilayer pores withparallel edges can be created, which is not possible in the commonly fabricatedmultilayer AA-h<missing VAR>-BN.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magnetism and Interlayer Bonding in Pores of Bernal-Stacked Hexagonal Boron Nitride|Mehmet Dogan,Marvin L. Cohen###
(1749192, 1749192)
 In theprocess of forming larger multilayer nanopores, interlayer bonds can form,reducing the magnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Magnetism and Interlayer Bonding in Pores of Bernal-Stacked Hexagonal Boron Nitride|Mehmet Dogan,Marvin L. Cohen###
(1749278, 1749278)
 Understanding these pores is also helpful in amultitude of applications such as D<missing VAR>NA sequencing and quantum emission.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cs
###Tuning the competition between superconductivity and charge order in kagome superconductor Cs(V1-xNbx)3Sb5|Yongkai Li,Qing Li,Xinwei Fan,Jinjin Liu,Qi Feng,Min Liu,Chunlei Wang,Jia-Xin Yin,Junxi Duan,Xiang Li,Zhiwei Wang,Hai-Hu Wen,Yugui Yao###
(1749320, 1749320)
Tuning the competition between superconductivity and charge order in kagome superconductor Cs(V1-xNbx)3Sb5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V1-x
###Tuning the competition between superconductivity and charge order in kagome superconductor Cs(V1-xNbx)3Sb5|Yongkai Li,Qing Li,Xinwei Fan,Jinjin Liu,Qi Feng,Min Liu,Chunlei Wang,Jia-Xin Yin,Junxi Duan,Xiang Li,Zhiwei Wang,Hai-Hu Wen,Yugui Yao###
(1749322, 1749325)
Tuning the competition between superconductivity and charge order in kagome superconductor Cs(V1-xNbx)3Sb5.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

Sb5
###Tuning the competition between superconductivity and charge order in kagome superconductor Cs(V1-xNbx)3Sb5|Yongkai Li,Qing Li,Xinwei Fan,Jinjin Liu,Qi Feng,Min Liu,Chunlei Wang,Jia-Xin Yin,Junxi Duan,Xiang Li,Zhiwei Wang,Hai-Hu Wen,Yugui Yao###
(1749329, 1749330)
Tuning the competition between superconductivity and charge order in kagome superconductor Cs(V1-xNbx)3Sb5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V3Sb5
###Tuning the competition between superconductivity and charge order in kagome superconductor Cs(V1-xNbx)3Sb5|Yongkai Li,Qing Li,Xinwei Fan,Jinjin Liu,Qi Feng,Min Liu,Chunlei Wang,Jia-Xin Yin,Junxi Duan,Xiang Li,Zhiwei Wang,Hai-Hu Wen,Yugui Yao###
(1749365, 1749368)
 The recently discovered coexistence of superconductivity and charge densitywave order in the kagome systems AV3Sb5 (A  K, Rb, Cs) has stimulated enormousinterest.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.375,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.625,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Tuning the competition between superconductivity and charge order in kagome superconductor Cs(V1-xNbx)3Sb5|Yongkai Li,Qing Li,Xinwei Fan,Jinjin Liu,Qi Feng,Min Liu,Chunlei Wang,Jia-Xin Yin,Junxi Duan,Xiang Li,Zhiwei Wang,Hai-Hu Wen,Yugui Yao###
(1749374, 1749374)
 The recently discovered coexistence of superconductivity and charge densitywave order in the kagome systems AV3Sb5 (A  K, Rb, Cs) has stimulated enormousinterest.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Rb
###Tuning the competition between superconductivity and charge order in kagome superconductor Cs(V1-xNbx)3Sb5|Yongkai Li,Qing Li,Xinwei Fan,Jinjin Liu,Qi Feng,Min Liu,Chunlei Wang,Jia-Xin Yin,Junxi Duan,Xiang Li,Zhiwei Wang,Hai-Hu Wen,Yugui Yao###
(1749377, 1749377)
 The recently discovered coexistence of superconductivity and charge densitywave order in the kagome systems AV3Sb5 (A  K, Rb, Cs) has stimulated enormousinterest.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cs
###Tuning the competition between superconductivity and charge order in kagome superconductor Cs(V1-xNbx)3Sb5|Yongkai Li,Qing Li,Xinwei Fan,Jinjin Liu,Qi Feng,Min Liu,Chunlei Wang,Jia-Xin Yin,Junxi Duan,Xiang Li,Zhiwei Wang,Hai-Hu Wen,Yugui Yao###
(1749380, 1749380)
 The recently discovered coexistence of superconductivity and charge densitywave order in the kagome systems AV3Sb5 (A  K, Rb, Cs) has stimulated enormousinterest.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Tuning the competition between superconductivity and charge order in kagome superconductor Cs(V1-xNbx)3Sb5|Yongkai Li,Qing Li,Xinwei Fan,Jinjin Liu,Qi Feng,Min Liu,Chunlei Wang,Jia-Xin Yin,Junxi Duan,Xiang Li,Zhiwei Wang,Hai-Hu Wen,Yugui Yao###
(1749473, 1749473)
 Despite intensive investigations, it remains controversial aboutthe origin of the charge density wave (CD<missing VAR>W) order, how does thesuperconductivity relate to the CD<missing VAR>W, and whether the anomalous Hall effect(AHE) arises primarily from the kagome lattice or the CD<missing VAR>W order.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Tuning the competition between superconductivity and charge order in kagome superconductor Cs(V1-xNbx)3Sb5|Yongkai Li,Qing Li,Xinwei Fan,Jinjin Liu,Qi Feng,Min Liu,Chunlei Wang,Jia-Xin Yin,Junxi Duan,Xiang Li,Zhiwei Wang,Hai-Hu Wen,Yugui Yao###
(1749475, 1749475)
 Despite intensive investigations, it remains controversial aboutthe origin of the charge density wave (CD<missing VAR>W) order, how does thesuperconductivity relate to the CD<missing VAR>W, and whether the anomalous Hall effect(AHE) arises primarily from the kagome lattice or the CD<missing VAR>W order.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Tuning the competition between superconductivity and charge order in kagome superconductor Cs(V1-xNbx)3Sb5|Yongkai Li,Qing Li,Xinwei Fan,Jinjin Liu,Qi Feng,Min Liu,Chunlei Wang,Jia-Xin Yin,Junxi Duan,Xiang Li,Zhiwei Wang,Hai-Hu Wen,Yugui Yao###
(1749496, 1749496)
 Despite intensive investigations, it remains controversial aboutthe origin of the charge density wave (CD<missing VAR>W) order, how does thesuperconductivity relate to the CD<missing VAR>W, and whether the anomalous Hall effect(AHE) arises primarily from the kagome lattice or the CD<missing VAR>W order.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Tuning the competition between superconductivity and charge order in kagome superconductor Cs(V1-xNbx)3Sb5|Yongkai Li,Qing Li,Xinwei Fan,Jinjin Liu,Qi Feng,Min Liu,Chunlei Wang,Jia-Xin Yin,Junxi Duan,Xiang Li,Zhiwei Wang,Hai-Hu Wen,Yugui Yao###
(1749498, 1749498)
 Despite intensive investigations, it remains controversial aboutthe origin of the charge density wave (CD<missing VAR>W) order, how does thesuperconductivity relate to the CD<missing VAR>W, and whether the anomalous Hall effect(AHE) arises primarily from the kagome lattice or the CD<missing VAR>W order.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Tuning the competition between superconductivity and charge order in kagome superconductor Cs(V1-xNbx)3Sb5|Yongkai Li,Qing Li,Xinwei Fan,Jinjin Liu,Qi Feng,Min Liu,Chunlei Wang,Jia-Xin Yin,Junxi Duan,Xiang Li,Zhiwei Wang,Hai-Hu Wen,Yugui Yao###
(1749516, 1749516)
 Despite intensive investigations, it remains controversial aboutthe origin of the charge density wave (CD<missing VAR>W) order, how does thesuperconductivity relate to the CD<missing VAR>W, and whether the anomalous Hall effect(AHE) arises primarily from the kagome lattice or the CD<missing VAR>W order.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Tuning the competition between superconductivity and charge order in kagome superconductor Cs(V1-xNbx)3Sb5|Yongkai Li,Qing Li,Xinwei Fan,Jinjin Liu,Qi Feng,Min Liu,Chunlei Wang,Jia-Xin Yin,Junxi Duan,Xiang Li,Zhiwei Wang,Hai-Hu Wen,Yugui Yao###
(1749536, 1749536)
 Despite intensive investigations, it remains controversial aboutthe origin of the charge density wave (CD<missing VAR>W) order, how does thesuperconductivity relate to the CD<missing VAR>W, and whether the anomalous Hall effect(AHE) arises primarily from the kagome lattice or the CD<missing VAR>W order.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Tuning the competition between superconductivity and charge order in kagome superconductor Cs(V1-xNbx)3Sb5|Yongkai Li,Qing Li,Xinwei Fan,Jinjin Liu,Qi Feng,Min Liu,Chunlei Wang,Jia-Xin Yin,Junxi Duan,Xiang Li,Zhiwei Wang,Hai-Hu Wen,Yugui Yao###
(1749538, 1749538)
 Despite intensive investigations, it remains controversial aboutthe origin of the charge density wave (CD<missing VAR>W) order, how does thesuperconductivity relate to the CD<missing VAR>W, and whether the anomalous Hall effect(AHE) arises primarily from the kagome lattice or the CD<missing VAR>W order.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cs
###Tuning the competition between superconductivity and charge order in kagome superconductor Cs(V1-xNbx)3Sb5|Yongkai Li,Qing Li,Xinwei Fan,Jinjin Liu,Qi Feng,Min Liu,Chunlei Wang,Jia-Xin Yin,Junxi Duan,Xiang Li,Zhiwei Wang,Hai-Hu Wen,Yugui Yao###
(1749556, 1749556)
 We report anextensive investigation on Cs(V1-xNbx)3Sb5 samples with systematic Nb doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V1-x
###Tuning the competition between superconductivity and charge order in kagome superconductor Cs(V1-xNbx)3Sb5|Yongkai Li,Qing Li,Xinwei Fan,Jinjin Liu,Qi Feng,Min Liu,Chunlei Wang,Jia-Xin Yin,Junxi Duan,Xiang Li,Zhiwei Wang,Hai-Hu Wen,Yugui Yao###
(1749558, 1749561)
 We report anextensive investigation on Cs(V1-xNbx)3Sb5 samples with systematic Nb doping.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

Sb5
###Tuning the competition between superconductivity and charge order in kagome superconductor Cs(V1-xNbx)3Sb5|Yongkai Li,Qing Li,Xinwei Fan,Jinjin Liu,Qi Feng,Min Liu,Chunlei Wang,Jia-Xin Yin,Junxi Duan,Xiang Li,Zhiwei Wang,Hai-Hu Wen,Yugui Yao###
(1749565, 1749566)
 We report anextensive investigation on Cs(V1-xNbx)3Sb5 samples with systematic Nb doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nb
###Tuning the competition between superconductivity and charge order in kagome superconductor Cs(V1-xNbx)3Sb5|Yongkai Li,Qing Li,Xinwei Fan,Jinjin Liu,Qi Feng,Min Liu,Chunlei Wang,Jia-Xin Yin,Junxi Duan,Xiang Li,Zhiwei Wang,Hai-Hu Wen,Yugui Yao###
(1749574, 1749574)
 We report anextensive investigation on Cs(V1-xNbx)3Sb5 samples with systematic Nb doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nb
###Tuning the competition between superconductivity and charge order in kagome superconductor Cs(V1-xNbx)3Sb5|Yongkai Li,Qing Li,Xinwei Fan,Jinjin Liu,Qi Feng,Min Liu,Chunlei Wang,Jia-Xin Yin,Junxi Duan,Xiang Li,Zhiwei Wang,Hai-Hu Wen,Yugui Yao###
(1749590, 1749590)
Our results show that the Nb doping induces apparent suppression of CD<missing VAR>W orderand promotes superconductivity; meanwhile, the AHE<missing VAR> and magnetoresistance (MR)will be significantly weakened together with the CD<missing VAR>W order.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Tuning the competition between superconductivity and charge order in kagome superconductor Cs(V1-xNbx)3Sb5|Yongkai Li,Qing Li,Xinwei Fan,Jinjin Liu,Qi Feng,Min Liu,Chunlei Wang,Jia-Xin Yin,Junxi Duan,Xiang Li,Zhiwei Wang,Hai-Hu Wen,Yugui Yao###
(1749602, 1749602)
Our results show that the Nb doping induces apparent suppression of CD<missing VAR>W orderand promotes superconductivity; meanwhile, the AHE<missing VAR> and magnetoresistance (MR)will be significantly weakened together with the CD<missing VAR>W order.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Tuning the competition between superconductivity and charge order in kagome superconductor Cs(V1-xNbx)3Sb5|Yongkai Li,Qing Li,Xinwei Fan,Jinjin Liu,Qi Feng,Min Liu,Chunlei Wang,Jia-Xin Yin,Junxi Duan,Xiang Li,Zhiwei Wang,Hai-Hu Wen,Yugui Yao###
(1749604, 1749604)
Our results show that the Nb doping induces apparent suppression of CD<missing VAR>W orderand promotes superconductivity; meanwhile, the AHE<missing VAR> and magnetoresistance (MR)will be significantly weakened together with the CD<missing VAR>W order.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Tuning the competition between superconductivity and charge order in kagome superconductor Cs(V1-xNbx)3Sb5|Yongkai Li,Qing Li,Xinwei Fan,Jinjin Liu,Qi Feng,Min Liu,Chunlei Wang,Jia-Xin Yin,Junxi Duan,Xiang Li,Zhiwei Wang,Hai-Hu Wen,Yugui Yao###
(1749622, 1749622)
Our results show that the Nb doping induces apparent suppression of CD<missing VAR>W orderand promotes superconductivity; meanwhile, the AHE<missing VAR> and magnetoresistance (MR)will be significantly weakened together with the CD<missing VAR>W order.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Tuning the competition between superconductivity and charge order in kagome superconductor Cs(V1-xNbx)3Sb5|Yongkai Li,Qing Li,Xinwei Fan,Jinjin Liu,Qi Feng,Min Liu,Chunlei Wang,Jia-Xin Yin,Junxi Duan,Xiang Li,Zhiwei Wang,Hai-Hu Wen,Yugui Yao###
(1749649, 1749649)
Our results show that the Nb doping induces apparent suppression of CD<missing VAR>W orderand promotes superconductivity; meanwhile, the AHE<missing VAR> and magnetoresistance (MR)will be significantly weakened together with the CD<missing VAR>W order.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Tuning the competition between superconductivity and charge order in kagome superconductor Cs(V1-xNbx)3Sb5|Yongkai Li,Qing Li,Xinwei Fan,Jinjin Liu,Qi Feng,Min Liu,Chunlei Wang,Jia-Xin Yin,Junxi Duan,Xiang Li,Zhiwei Wang,Hai-Hu Wen,Yugui Yao###
(1749651, 1749651)
Our results show that the Nb doping induces apparent suppression of CD<missing VAR>W orderand promotes superconductivity; meanwhile, the AHE<missing VAR> and magnetoresistance (MR)will be significantly weakened together with the CD<missing VAR>W order.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Tuning the competition between superconductivity and charge order in kagome superconductor Cs(V1-xNbx)3Sb5|Yongkai Li,Qing Li,Xinwei Fan,Jinjin Liu,Qi Feng,Min Liu,Chunlei Wang,Jia-Xin Yin,Junxi Duan,Xiang Li,Zhiwei Wang,Hai-Hu Wen,Yugui Yao###
(1749752, 1749752)
 It is found that the former depletesthe filled states for the CD<missing VAR>W instability and worsens the nesting condition forCD<missing VAR>W order; while the latter lifts the Fermi level upward and enlarges the Fermisurface surrounding the Gamma point, and thus promotes superconductivity.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Tuning the competition between superconductivity and charge order in kagome superconductor Cs(V1-xNbx)3Sb5|Yongkai Li,Qing Li,Xinwei Fan,Jinjin Liu,Qi Feng,Min Liu,Chunlei Wang,Jia-Xin Yin,Junxi Duan,Xiang Li,Zhiwei Wang,Hai-Hu Wen,Yugui Yao###
(1749754, 1749754)
 It is found that the former depletesthe filled states for the CD<missing VAR>W instability and worsens the nesting condition forCD<missing VAR>W order; while the latter lifts the Fermi level upward and enlarges the Fermisurface surrounding the Gamma point, and thus promotes superconductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Tuning the competition between superconductivity and charge order in kagome superconductor Cs(V1-xNbx)3Sb5|Yongkai Li,Qing Li,Xinwei Fan,Jinjin Liu,Qi Feng,Min Liu,Chunlei Wang,Jia-Xin Yin,Junxi Duan,Xiang Li,Zhiwei Wang,Hai-Hu Wen,Yugui Yao###
(1749771, 1749771)
 It is found that the former depletesthe filled states for the CD<missing VAR>W instability and worsens the nesting condition forCD<missing VAR>W order; while the latter lifts the Fermi level upward and enlarges the Fermisurface surrounding the Gamma point, and thus promotes superconductivity.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Tuning the competition between superconductivity and charge order in kagome superconductor Cs(V1-xNbx)3Sb5|Yongkai Li,Qing Li,Xinwei Fan,Jinjin Liu,Qi Feng,Min Liu,Chunlei Wang,Jia-Xin Yin,Junxi Duan,Xiang Li,Zhiwei Wang,Hai-Hu Wen,Yugui Yao###
(1749773, 1749773)
 It is found that the former depletesthe filled states for the CD<missing VAR>W instability and worsens the nesting condition forCD<missing VAR>W order; while the latter lifts the Fermi level upward and enlarges the Fermisurface surrounding the Gamma point, and thus promotes superconductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Tuning the competition between superconductivity and charge order in kagome superconductor Cs(V1-xNbx)3Sb5|Yongkai Li,Qing Li,Xinwei Fan,Jinjin Liu,Qi Feng,Min Liu,Chunlei Wang,Jia-Xin Yin,Junxi Duan,Xiang Li,Zhiwei Wang,Hai-Hu Wen,Yugui Yao###
(1749844, 1749844)
Our results uncover a delicate but unusual competition between the CD<missing VAR>W orderand superconductivity.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Tuning the competition between superconductivity and charge order in kagome superconductor Cs(V1-xNbx)3Sb5|Yongkai Li,Qing Li,Xinwei Fan,Jinjin Liu,Qi Feng,Min Liu,Chunlei Wang,Jia-Xin Yin,Junxi Duan,Xiang Li,Zhiwei Wang,Hai-Hu Wen,Yugui Yao###
(1749846, 1749846)
Our results uncover a delicate but unusual competition between the CD<missing VAR>W orderand superconductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###The drastic effect of the impurity scattering on the electronic and superconducting properties of Cu-doped FeSe|Z. Zajicek,S. J. Singh,H. Jones,P. Reiss,M. Bristow,A. Martin,A. Gower,A. McCollam,A. I. Coldea###
(1749892, 1749892)
The drastic effect of the impurity scattering on the electronic and superconducting properties of Cu-doped FeSe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[194.0, 35, 'T', 4]

FeSe
###The drastic effect of the impurity scattering on the electronic and superconducting properties of Cu-doped FeSe|Z. Zajicek,S. J. Singh,H. Jones,P. Reiss,M. Bristow,A. Martin,A. Gower,A. McCollam,A. I. Coldea###
(1749896, 1749897)
The drastic effect of the impurity scattering on the electronic and superconducting properties of Cu-doped FeSe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[189.0, 35, 'T', 4]

Fe
###The drastic effect of the impurity scattering on the electronic and superconducting properties of Cu-doped FeSe|Z. Zajicek,S. J. Singh,H. Jones,P. Reiss,M. Bristow,A. Martin,A. Gower,A. McCollam,A. I. Coldea###
(1749989, 1749989)
 Here, we presenta study of the role of strong impurity potential in the Fe plane, induced by Cusubstitution, on the electronic and superconducting properties of singlecrystals of FeSe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 35, 'T', 2]

Cu
###The drastic effect of the impurity scattering on the electronic and superconducting properties of Cu-doped FeSe|Z. Zajicek,S. J. Singh,H. Jones,P. Reiss,M. Bristow,A. Martin,A. Gower,A. McCollam,A. I. Coldea###
(1749998, 1749998)
 Here, we presenta study of the role of strong impurity potential in the Fe plane, induced by Cusubstitution, on the electronic and superconducting properties of singlecrystals of FeSe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 35, 'T', 2]

FeSe
###The drastic effect of the impurity scattering on the electronic and superconducting properties of Cu-doped FeSe|Z. Zajicek,S. J. Singh,H. Jones,P. Reiss,M. Bristow,A. Martin,A. Gower,A. McCollam,A. I. Coldea###
(1750025, 1750026)
 Here, we presenta study of the role of strong impurity potential in the Fe plane, induced by Cusubstitution, on the electronic and superconducting properties of singlecrystals of FeSe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 35, 'T', 2]

Cu
###The drastic effect of the impurity scattering on the electronic and superconducting properties of Cu-doped FeSe|Z. Zajicek,S. J. Singh,H. Jones,P. Reiss,M. Bristow,A. Martin,A. Gower,A. McCollam,A. I. Coldea###
(1750035, 1750035)
 The addition of Cu quickly suppresses both the nematic andsuperconducting states, and increases the residual resistivity due to enhancedimpurity scattering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 35, 'T', 1]

Cu
###The drastic effect of the impurity scattering on the electronic and superconducting properties of Cu-doped FeSe|Z. Zajicek,S. J. Singh,H. Jones,P. Reiss,M. Bristow,A. Martin,A. Gower,A. McCollam,A. I. Coldea###
(1750099, 1750099)
 Using magnetotransport data up to 35 T for a small amountof Cu impurity, we detect a significant reduction in the mobility of the chargecarriers by a factor of 3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 35, 'T', 0]

Cu
###The drastic effect of the impurity scattering on the electronic and superconducting properties of Cu-doped FeSe|Z. Zajicek,S. J. Singh,H. Jones,P. Reiss,M. Bristow,A. Martin,A. Gower,A. McCollam,A. I. Coldea###
(1750157, 1750157)
 While the electronic conduction is stronglydisrupted by Cu substitution, we identify additional signatures of anisotropicscattering which manifest in linear resistivity at low temperatures andH1.6 dependence of magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 35, 'T', 1]

H1.6
###The drastic effect of the impurity scattering on the electronic and superconducting properties of Cu-doped FeSe|Z. Zajicek,S. J. Singh,H. Jones,P. Reiss,M. Bristow,A. Martin,A. Gower,A. McCollam,A. I. Coldea###
(1750196, 1750197)
 While the electronic conduction is stronglydisrupted by Cu substitution, we identify additional signatures of anisotropicscattering which manifest in linear resistivity at low temperatures andH1.6 dependence of magnetoresistance.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 35, 'T', 1]

Cu
###The drastic effect of the impurity scattering on the electronic and superconducting properties of Cu-doped FeSe|Z. Zajicek,S. J. Singh,H. Jones,P. Reiss,M. Bristow,A. Martin,A. Gower,A. McCollam,A. I. Coldea###
(1750217, 1750217)
 The suppression of superconductivityby Cu substitution is consistent with a sign-changing s<missing VAR>pm orderparameter.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 35, 'T', 2]

FeSe
###The drastic effect of the impurity scattering on the electronic and superconducting properties of Cu-doped FeSe|Z. Zajicek,S. J. Singh,H. Jones,P. Reiss,M. Bristow,A. Martin,A. Gower,A. McCollam,A. I. Coldea###
(1750272, 1750273)
 Additionally, in the presence of compressive strain, thesuperconductivity is enhanced, similar to FeSe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, 35, 'T', 3]

P
###Nematic single-component superconductivity and loop-current order from pair-density wave instability|Jonatan Wårdh,Mats Granath###
(1750364, 1750364)
 We investigate the nematic and loop-current type orders that may arise asvestigial precursor phases in a model with an underlying pair-density wave(PD<missing VAR>W) instability.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Nematic single-component superconductivity and loop-current order from pair-density wave instability|Jonatan Wårdh,Mats Granath###
(1750366, 1750366)
 We investigate the nematic and loop-current type orders that may arise asvestigial precursor phases in a model with an underlying pair-density wave(PD<missing VAR>W) instability.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Nematic single-component superconductivity and loop-current order from pair-density wave instability|Jonatan Wårdh,Mats Granath###
(1750462, 1750462)
Next, focusing on a regime with a mean-field PD<missing VAR>W ground state with loop-currentand nematic xy (B2g) order, we find a preemptive transition into a lowand high-temperature vestigial phase with loop-current and nematic ordercorresponding to xy (B2g) and x<missing VAR>2-y<missing VAR>2 (B1g) symmetryrespectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Nematic single-component superconductivity and loop-current order from pair-density wave instability|Jonatan Wårdh,Mats Granath###
(1750464, 1750464)
Next, focusing on a regime with a mean-field PD<missing VAR>W ground state with loop-currentand nematic xy (B2g) order, we find a preemptive transition into a lowand high-temperature vestigial phase with loop-current and nematic ordercorresponding to xy (B2g) and x<missing VAR>2-y<missing VAR>2 (B1g) symmetryrespectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B2
###Nematic single-component superconductivity and loop-current order from pair-density wave instability|Jonatan Wårdh,Mats Granath###
(1750484, 1750485)
Next, focusing on a regime with a mean-field PD<missing VAR>W ground state with loop-currentand nematic xy (B2g) order, we find a preemptive transition into a lowand high-temperature vestigial phase with loop-current and nematic ordercorresponding to xy (B2g) and x<missing VAR>2-y<missing VAR>2 (B1g) symmetryrespectively.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B2
###Nematic single-component superconductivity and loop-current order from pair-density wave instability|Jonatan Wårdh,Mats Granath###
(1750539, 1750540)
Next, focusing on a regime with a mean-field PD<missing VAR>W ground state with loop-currentand nematic xy (B2g) order, we find a preemptive transition into a lowand high-temperature vestigial phase with loop-current and nematic ordercorresponding to xy (B2g) and x<missing VAR>2-y<missing VAR>2 (B1g) symmetryrespectively.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B1
###Nematic single-component superconductivity and loop-current order from pair-density wave instability|Jonatan Wårdh,Mats Granath###
(1750553, 1750554)
Next, focusing on a regime with a mean-field PD<missing VAR>W ground state with loop-currentand nematic xy (B2g) order, we find a preemptive transition into a lowand high-temperature vestigial phase with loop-current and nematic ordercorresponding to xy (B2g) and x<missing VAR>2-y<missing VAR>2 (B1g) symmetryrespectively.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Nematic single-component superconductivity and loop-current order from pair-density wave instability|Jonatan Wårdh,Mats Granath###
(1750687, 1750687)
 Results are discussed in relation to findings in the cuprates,especially to the recently inferred highly anisotropic superconductingfluctuations [Waardh em et al.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Nematic single-component superconductivity and loop-current order from pair-density wave instability|Jonatan Wårdh,Mats Granath###
(1750748, 1750748)
, Colossal transverse magnetoresistancedue to nematic superconducting phase fluctuations in a copper oxide,arXiv2203.06769], giving additional evidence for an underlying ubiquitous PD<missing VAR>Winstability in these materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Nematic single-component superconductivity and loop-current order from pair-density wave instability|Jonatan Wårdh,Mats Granath###
(1750750, 1750750)
, Colossal transverse magnetoresistancedue to nematic superconducting phase fluctuations in a copper oxide,arXiv2203.06769], giving additional evidence for an underlying ubiquitous PD<missing VAR>Winstability in these materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###TMR transition and highly sensitive pressure sensors based on magnetic tunnel junctions with black phosphorus barrier|Fang Henan,Li Qian,Xiao Mingwen,Liu Yan###
(1750862, 1750862)
In particular, the special band features of black phosphorus may bringintriguing physical characteristics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GaAs
###Correlated states of 2D electrons near the Landau level filling $ν=1/7$|Yoon Jang Chung,D. Graf,L. W. Engel,K. A. Villegas Rosales,P. T. Madathil,K. W. Baldwin,K. W. West,L. N. Pfeiffer,M. Shayegan###
(1751428, 1751429)
 Following the recent breakthrough in thequality of ultra-high-mobility GaAs 2DESs, we revisit this problemexperimentally and investigate the impact of reduced disorder.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 2, 'D', 2],[1.0, 2, 'DESs', 0],[36.0, 2, 'DES', 1],[168.0, 6, ',', 3]

In
###Correlated states of 2D electrons near the Landau level filling $ν=1/7$|Yoon Jang Chung,D. Graf,L. W. Engel,K. A. Villegas Rosales,P. T. Madathil,K. W. Baldwin,K. W. West,L. N. Pfeiffer,M. Shayegan###
(1751459, 1751459)
 In a GaAs 2DESsample with density n<missing VAR>6.1times1010 /cm2 and mobilitymu25times106 cm2/Vs, we find a deep minimum in the longitudinalmagnetoresistance (R<missing VAR>xx) at nu1/7 when T<missing VAR>simeq104 m<missing VAR>K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 2, 'D', 3],[29.0, 2, 'DESs', 1],[6.0, 2, 'DES', 0],[138.0, 6, ',', 2]

GaAs
###Correlated states of 2D electrons near the Landau level filling $ν=1/7$|Yoon Jang Chung,D. Graf,L. W. Engel,K. A. Villegas Rosales,P. T. Madathil,K. W. Baldwin,K. W. West,L. N. Pfeiffer,M. Shayegan###
(1751463, 1751464)
 In a GaAs 2DESsample with density n<missing VAR>6.1times1010 /cm2 and mobilitymu25times106 cm2/Vs, we find a deep minimum in the longitudinalmagnetoresistance (R<missing VAR>xx) at nu1/7 when T<missing VAR>simeq104 m<missing VAR>K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 2, 'D', 3],[33.0, 2, 'DESs', 1],[1.0, 2, 'DES', 0],[133.0, 6, ',', 2]

K
###Correlated states of 2D electrons near the Landau level filling $ν=1/7$|Yoon Jang Chung,D. Graf,L. W. Engel,K. A. Villegas Rosales,P. T. Madathil,K. W. Baldwin,K. W. West,L. N. Pfeiffer,M. Shayegan###
(1751539, 1751539)
 In a GaAs 2DESsample with density n<missing VAR>6.1times1010 /cm2 and mobilitymu25times106 cm2/Vs, we find a deep minimum in the longitudinalmagnetoresistance (R<missing VAR>xx) at nu1/7 when T<missing VAR>simeq104 m<missing VAR>K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[223.0, 2, 'D', 3],[109.0, 2, 'DESs', 1],[74.0, 2, 'DES', 0],[58.0, 6, ',', 2]

II
###Fluctuation Conductivity and Vortex State in Superconductor with Strong Paramagnetic Pair Breaking|Naratip Nunchot,Dai Nakashima,Ryusuke Ikeda###
(1751829, 1751830)
 The fluctuation conductivity of a moderately clean type II superconductorwith strong Pauli paramagnetic pair-breaking (PPB) is studied by focusing onthe quantum regime at low temperatures and in high magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(PPB)
###Fluctuation Conductivity and Vortex State in Superconductor with Strong Paramagnetic Pair Breaking|Naratip Nunchot,Dai Nakashima,Ryusuke Ikeda###
(1751847, 1751851)
 The fluctuation conductivity of a moderately clean type II superconductorwith strong Pauli paramagnetic pair-breaking (PPB) is studied by focusing onthe quantum regime at low temperatures and in high magnetic fields.
Featurization successful!
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PPB
###Fluctuation Conductivity and Vortex State in Superconductor with Strong Paramagnetic Pair Breaking|Naratip Nunchot,Dai Nakashima,Ryusuke Ikeda###
(1751906, 1751908)
 First, itis pointed out that, as the PPB effect becomes stronger, the quantumsuperconducting fluctuation is generally enhanced so that the Aslamasov-Larkin(AL) fluctuation conductivity tends to vanish upon cooling.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OS
###Fluctuation Conductivity and Vortex State in Superconductor with Strong Paramagnetic Pair Breaking|Naratip Nunchot,Dai Nakashima,Ryusuke Ikeda###
(1751977, 1751978)
 Further, byexamining other (the D<missing VAR>OS and the Maki-Thompson (MT)) terms of the fluctuationconductivity, the field dependence of the resulting total conductivity is foundto depend significantly on the type of the vortex lattice (or, glass) orderedstate at low temperatures where the strong PPB plays important roles.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PPB
###Fluctuation Conductivity and Vortex State in Superconductor with Strong Paramagnetic Pair Breaking|Naratip Nunchot,Dai Nakashima,Ryusuke Ikeda###
(1752071, 1752073)
 Further, byexamining other (the D<missing VAR>OS and the Maki-Thompson (MT)) terms of the fluctuationconductivity, the field dependence of the resulting total conductivity is foundto depend significantly on the type of the vortex lattice (or, glass) orderedstate at low temperatures where the strong PPB plays important roles.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PPB
###Fluctuation Conductivity and Vortex State in Superconductor with Strong Paramagnetic Pair Breaking|Naratip Nunchot,Dai Nakashima,Ryusuke Ikeda###
(1752116, 1752118)
 Bycomparing the present theoretical results with the fluctuation-induced negativemagnetoresistance behavior upon entering a PPB-induced novel SC phase of Ironselenide (FeSe), it is argued that the vortex matter states of thesuperconducting order parameter in the second lowest (n<missing VAR>1) Landau level arerealized in FeSe in the parallel field configuration in high fields and at lowtemperatures<missing PERIOD>
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SC
###Fluctuation Conductivity and Vortex State in Superconductor with Strong Paramagnetic Pair Breaking|Naratip Nunchot,Dai Nakashima,Ryusuke Ikeda###
(1752124, 1752125)
 Bycomparing the present theoretical results with the fluctuation-induced negativemagnetoresistance behavior upon entering a PPB-induced novel SC phase of Ironselenide (FeSe), it is argued that the vortex matter states of thesuperconducting order parameter in the second lowest (n<missing VAR>1) Landau level arerealized in FeSe in the parallel field configuration in high fields and at lowtemperatures<missing PERIOD>
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(FeSe)
###Fluctuation Conductivity and Vortex State in Superconductor with Strong Paramagnetic Pair Breaking|Naratip Nunchot,Dai Nakashima,Ryusuke Ikeda###
(1752136, 1752139)
 Bycomparing the present theoretical results with the fluctuation-induced negativemagnetoresistance behavior upon entering a PPB-induced novel SC phase of Ironselenide (FeSe), it is argued that the vortex matter states of thesuperconducting order parameter in the second lowest (n<missing VAR>1) Landau level arerealized in FeSe in the parallel field configuration in high fields and at lowtemperatures<missing PERIOD>
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeSe
###Fluctuation Conductivity and Vortex State in Superconductor with Strong Paramagnetic Pair Breaking|Naratip Nunchot,Dai Nakashima,Ryusuke Ikeda###
(1752193, 1752194)
 Bycomparing the present theoretical results with the fluctuation-induced negativemagnetoresistance behavior upon entering a PPB-induced novel SC phase of Ironselenide (FeSe), it is argued that the vortex matter states of thesuperconducting order parameter in the second lowest (n<missing VAR>1) Landau level arerealized in FeSe in the parallel field configuration in high fields and at lowtemperatures<missing PERIOD>
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbAs2
###Electronic structure and open-orbit Fermi surface topology in isostructural semimetals NbAs$_2$ and W$_2$As$_3$ with extremely large magnetoresistance|Rui Lou,Yiyan Wang,Lingxiao Zhao,Chenchao Xu,Man Li,Xiaoyang Chen,Anmin Zhang,Yaobo Huang,Chao Cao,Genfu Chen,Tianlong Xia,Qingming Zhang,Hong Ding,Shancai Wang###
(1752251, 1752253)
Electronic structure and open-orbit Fermi surface topology in isostructural semimetals NbAs2 and W2As3 with extremely large magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[360.0, 1, ',', 5]

W2As3
###Electronic structure and open-orbit Fermi surface topology in isostructural semimetals NbAs$_2$ and W$_2$As$_3$ with extremely large magnetoresistance|Rui Lou,Yiyan Wang,Lingxiao Zhao,Chenchao Xu,Man Li,Xiaoyang Chen,Anmin Zhang,Yaobo Huang,Chao Cao,Genfu Chen,Tianlong Xia,Qingming Zhang,Hong Ding,Shancai Wang###
(1752257, 1752260)
Electronic structure and open-orbit Fermi surface topology in isostructural semimetals NbAs2 and W2As3 with extremely large magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[353.0, 1, ',', 5]

In
###Electronic structure and open-orbit Fermi surface topology in isostructural semimetals NbAs$_2$ and W$_2$As$_3$ with extremely large magnetoresistance|Rui Lou,Yiyan Wang,Lingxiao Zhao,Chenchao Xu,Man Li,Xiaoyang Chen,Anmin Zhang,Yaobo Huang,Chao Cao,Genfu Chen,Tianlong Xia,Qingming Zhang,Hong Ding,Shancai Wang###
(1752271, 1752271)
 In transition-metal dipnictides TmPn2 (Tm  Ta, Nb; Pn  P, As, Sb),the origin of extremely large magnetoresistance (XMR) is yet to be studied bythe direct visualization of the experimental band structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[342.0, 1, ',', 4]

Tm
###Electronic structure and open-orbit Fermi surface topology in isostructural semimetals NbAs$_2$ and W$_2$As$_3$ with extremely large magnetoresistance|Rui Lou,Yiyan Wang,Lingxiao Zhao,Chenchao Xu,Man Li,Xiaoyang Chen,Anmin Zhang,Yaobo Huang,Chao Cao,Genfu Chen,Tianlong Xia,Qingming Zhang,Hong Ding,Shancai Wang###
(1752279, 1752279)
 In transition-metal dipnictides TmPn2 (Tm  Ta, Nb; Pn  P, As, Sb),the origin of extremely large magnetoresistance (XMR) is yet to be studied bythe direct visualization of the experimental band structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[334.0, 1, ',', 4]

Tm
###Electronic structure and open-orbit Fermi surface topology in isostructural semimetals NbAs$_2$ and W$_2$As$_3$ with extremely large magnetoresistance|Rui Lou,Yiyan Wang,Lingxiao Zhao,Chenchao Xu,Man Li,Xiaoyang Chen,Anmin Zhang,Yaobo Huang,Chao Cao,Genfu Chen,Tianlong Xia,Qingming Zhang,Hong Ding,Shancai Wang###
(1752284, 1752284)
 In transition-metal dipnictides TmPn2 (Tm  Ta, Nb; Pn  P, As, Sb),the origin of extremely large magnetoresistance (XMR) is yet to be studied bythe direct visualization of the experimental band structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[329.0, 1, ',', 4]

Ta
###Electronic structure and open-orbit Fermi surface topology in isostructural semimetals NbAs$_2$ and W$_2$As$_3$ with extremely large magnetoresistance|Rui Lou,Yiyan Wang,Lingxiao Zhao,Chenchao Xu,Man Li,Xiaoyang Chen,Anmin Zhang,Yaobo Huang,Chao Cao,Genfu Chen,Tianlong Xia,Qingming Zhang,Hong Ding,Shancai Wang###
(1752287, 1752287)
 In transition-metal dipnictides TmPn2 (Tm  Ta, Nb; Pn  P, As, Sb),the origin of extremely large magnetoresistance (XMR) is yet to be studied bythe direct visualization of the experimental band structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[326.0, 1, ',', 4]

Nb
###Electronic structure and open-orbit Fermi surface topology in isostructural semimetals NbAs$_2$ and W$_2$As$_3$ with extremely large magnetoresistance|Rui Lou,Yiyan Wang,Lingxiao Zhao,Chenchao Xu,Man Li,Xiaoyang Chen,Anmin Zhang,Yaobo Huang,Chao Cao,Genfu Chen,Tianlong Xia,Qingming Zhang,Hong Ding,Shancai Wang###
(1752290, 1752290)
 In transition-metal dipnictides TmPn2 (Tm  Ta, Nb; Pn  P, As, Sb),the origin of extremely large magnetoresistance (XMR) is yet to be studied bythe direct visualization of the experimental band structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[323.0, 1, ',', 4]

P
###Electronic structure and open-orbit Fermi surface topology in isostructural semimetals NbAs$_2$ and W$_2$As$_3$ with extremely large magnetoresistance|Rui Lou,Yiyan Wang,Lingxiao Zhao,Chenchao Xu,Man Li,Xiaoyang Chen,Anmin Zhang,Yaobo Huang,Chao Cao,Genfu Chen,Tianlong Xia,Qingming Zhang,Hong Ding,Shancai Wang###
(1752296, 1752296)
 In transition-metal dipnictides TmPn2 (Tm  Ta, Nb; Pn  P, As, Sb),the origin of extremely large magnetoresistance (XMR) is yet to be studied bythe direct visualization of the experimental band structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[317.0, 1, ',', 4]

As
###Electronic structure and open-orbit Fermi surface topology in isostructural semimetals NbAs$_2$ and W$_2$As$_3$ with extremely large magnetoresistance|Rui Lou,Yiyan Wang,Lingxiao Zhao,Chenchao Xu,Man Li,Xiaoyang Chen,Anmin Zhang,Yaobo Huang,Chao Cao,Genfu Chen,Tianlong Xia,Qingming Zhang,Hong Ding,Shancai Wang###
(1752299, 1752299)
 In transition-metal dipnictides TmPn2 (Tm  Ta, Nb; Pn  P, As, Sb),the origin of extremely large magnetoresistance (XMR) is yet to be studied bythe direct visualization of the experimental band structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[314.0, 1, ',', 4]

Sb
###Electronic structure and open-orbit Fermi surface topology in isostructural semimetals NbAs$_2$ and W$_2$As$_3$ with extremely large magnetoresistance|Rui Lou,Yiyan Wang,Lingxiao Zhao,Chenchao Xu,Man Li,Xiaoyang Chen,Anmin Zhang,Yaobo Huang,Chao Cao,Genfu Chen,Tianlong Xia,Qingming Zhang,Hong Ding,Shancai Wang###
(1752302, 1752302)
 In transition-metal dipnictides TmPn2 (Tm  Ta, Nb; Pn  P, As, Sb),the origin of extremely large magnetoresistance (XMR) is yet to be studied bythe direct visualization of the experimental band structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[311.0, 1, ',', 4]

NbAs2
###Electronic structure and open-orbit Fermi surface topology in isostructural semimetals NbAs$_2$ and W$_2$As$_3$ with extremely large magnetoresistance|Rui Lou,Yiyan Wang,Lingxiao Zhao,Chenchao Xu,Man Li,Xiaoyang Chen,Anmin Zhang,Yaobo Huang,Chao Cao,Genfu Chen,Tianlong Xia,Qingming Zhang,Hong Ding,Shancai Wang###
(1752389, 1752391)
 Here, usingangle-resolved photoemission spectroscopy, we map out the three-dimensionalelectronic structure of NbAs2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[222.0, 1, ',', 3]

F
###Electronic structure and open-orbit Fermi surface topology in isostructural semimetals NbAs$_2$ and W$_2$As$_3$ with extremely large magnetoresistance|Rui Lou,Yiyan Wang,Lingxiao Zhao,Chenchao Xu,Man Li,Xiaoyang Chen,Anmin Zhang,Yaobo Huang,Chao Cao,Genfu Chen,Tianlong Xia,Qingming Zhang,Hong Ding,Shancai Wang###
(1752424, 1752424)
 The open-orbit topology contributes to anon-negligible part of the Fermi surfaces (FSs), like that of the isostructuralcompound MoAs2, where the open FS is proposed to likely explain the originof XMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[189.0, 1, ',', 2]

MoAs2
###Electronic structure and open-orbit Fermi surface topology in isostructural semimetals NbAs$_2$ and W$_2$As$_3$ with extremely large magnetoresistance|Rui Lou,Yiyan Wang,Lingxiao Zhao,Chenchao Xu,Man Li,Xiaoyang Chen,Anmin Zhang,Yaobo Huang,Chao Cao,Genfu Chen,Tianlong Xia,Qingming Zhang,Hong Ding,Shancai Wang###
(1752442, 1752444)
 The open-orbit topology contributes to anon-negligible part of the Fermi surfaces (FSs), like that of the isostructuralcompound MoAs2, where the open FS is proposed to likely explain the originof XMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 1, ',', 2]

FS
###Electronic structure and open-orbit Fermi surface topology in isostructural semimetals NbAs$_2$ and W$_2$As$_3$ with extremely large magnetoresistance|Rui Lou,Yiyan Wang,Lingxiao Zhao,Chenchao Xu,Man Li,Xiaoyang Chen,Anmin Zhang,Yaobo Huang,Chao Cao,Genfu Chen,Tianlong Xia,Qingming Zhang,Hong Ding,Shancai Wang###
(1752453, 1752454)
 The open-orbit topology contributes to anon-negligible part of the Fermi surfaces (FSs), like that of the isostructuralcompound MoAs2, where the open FS is proposed to likely explain the originof XMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[159.0, 1, ',', 2]

F
###Electronic structure and open-orbit Fermi surface topology in isostructural semimetals NbAs$_2$ and W$_2$As$_3$ with extremely large magnetoresistance|Rui Lou,Yiyan Wang,Lingxiao Zhao,Chenchao Xu,Man Li,Xiaoyang Chen,Anmin Zhang,Yaobo Huang,Chao Cao,Genfu Chen,Tianlong Xia,Qingming Zhang,Hong Ding,Shancai Wang###
(1752501, 1752501)
 We further demonstrate the observation of open characters in theoverall FSs of W2As3, which is also a XMR semimetal with the same spacegroup of C12/m<missing VAR>1 as TmPn2 family and MoAs2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 1, ',', 1]

W2As3
###Electronic structure and open-orbit Fermi surface topology in isostructural semimetals NbAs$_2$ and W$_2$As$_3$ with extremely large magnetoresistance|Rui Lou,Yiyan Wang,Lingxiao Zhao,Chenchao Xu,Man Li,Xiaoyang Chen,Anmin Zhang,Yaobo Huang,Chao Cao,Genfu Chen,Tianlong Xia,Qingming Zhang,Hong Ding,Shancai Wang###
(1752506, 1752509)
 We further demonstrate the observation of open characters in theoverall FSs of W2As3, which is also a XMR semimetal with the same spacegroup of C12/m<missing VAR>1 as TmPn2 family and MoAs2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 1, ',', 1]

C12
###Electronic structure and open-orbit Fermi surface topology in isostructural semimetals NbAs$_2$ and W$_2$As$_3$ with extremely large magnetoresistance|Rui Lou,Yiyan Wang,Lingxiao Zhao,Chenchao Xu,Man Li,Xiaoyang Chen,Anmin Zhang,Yaobo Huang,Chao Cao,Genfu Chen,Tianlong Xia,Qingming Zhang,Hong Ding,Shancai Wang###
(1752539, 1752540)
 We further demonstrate the observation of open characters in theoverall FSs of W2As3, which is also a XMR semimetal with the same spacegroup of C12/m<missing VAR>1 as TmPn2 family and MoAs2.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 1, ',', 1]

Tm
###Electronic structure and open-orbit Fermi surface topology in isostructural semimetals NbAs$_2$ and W$_2$As$_3$ with extremely large magnetoresistance|Rui Lou,Yiyan Wang,Lingxiao Zhao,Chenchao Xu,Man Li,Xiaoyang Chen,Anmin Zhang,Yaobo Huang,Chao Cao,Genfu Chen,Tianlong Xia,Qingming Zhang,Hong Ding,Shancai Wang###
(1752547, 1752547)
 We further demonstrate the observation of open characters in theoverall FSs of W2As3, which is also a XMR semimetal with the same spacegroup of C12/m<missing VAR>1 as TmPn2 family and MoAs2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 1, ',', 1]

MoAs2
###Electronic structure and open-orbit Fermi surface topology in isostructural semimetals NbAs$_2$ and W$_2$As$_3$ with extremely large magnetoresistance|Rui Lou,Yiyan Wang,Lingxiao Zhao,Chenchao Xu,Man Li,Xiaoyang Chen,Anmin Zhang,Yaobo Huang,Chao Cao,Genfu Chen,Tianlong Xia,Qingming Zhang,Hong Ding,Shancai Wang###
(1752555, 1752557)
 We further demonstrate the observation of open characters in theoverall FSs of W2As3, which is also a XMR semimetal with the same spacegroup of C12/m<missing VAR>1 as TmPn2 family and MoAs2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 1, ',', 1]

FS
###Electronic structure and open-orbit Fermi surface topology in isostructural semimetals NbAs$_2$ and W$_2$As$_3$ with extremely large magnetoresistance|Rui Lou,Yiyan Wang,Lingxiao Zhao,Chenchao Xu,Man Li,Xiaoyang Chen,Anmin Zhang,Yaobo Huang,Chao Cao,Genfu Chen,Tianlong Xia,Qingming Zhang,Hong Ding,Shancai Wang###
(1752575, 1752576)
 Our results suggest thatthe open-orbit FS topology may be a shared feature between XMR materials withthe space group of C12/m<missing VAR>1, and thus could possibly play a role indetermining the corresponding XMR effect together with the electron-holecompensation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 1, ',', 0]

C12
###Electronic structure and open-orbit Fermi surface topology in isostructural semimetals NbAs$_2$ and W$_2$As$_3$ with extremely large magnetoresistance|Rui Lou,Yiyan Wang,Lingxiao Zhao,Chenchao Xu,Man Li,Xiaoyang Chen,Anmin Zhang,Yaobo Huang,Chao Cao,Genfu Chen,Tianlong Xia,Qingming Zhang,Hong Ding,Shancai Wang###
(1752609, 1752610)
 Our results suggest thatthe open-orbit FS topology may be a shared feature between XMR materials withthe space group of C12/m<missing VAR>1, and thus could possibly play a role indetermining the corresponding XMR effect together with the electron-holecompensation.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 1, ',', 0]

FeSi
###Probing FeSi, a d-electron topological Kondo insulator candidate, with magnetic field, pressure, and microwaves|Alexander Breindel,Yuhang Deng,Camilla M. Moir,Yuankan Fang,Sheng Ran,Hongbo Lou,Shubin Li,Qiaoshi Zeng,Lei Shu,Christian T. Wolowiec,Ivan K. Schuller,Priscila F. S. Rosa,Zachary Fisk,John Singleton,M. Brian Maple###
(1752669, 1752670)
Probing FeSi, a d<missing VAR>-electron topological Kondo insulator candidate, with magnetic field, pressure, and microwaves.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 19, 'K', 1],[143.0, 60, 'T', 2],[152.0, 7.6, 'GPa', 2],[317.0, 19, 'K', 4],[385.0, 7, 'GPa', 5]

FeSi
###Probing FeSi, a d-electron topological Kondo insulator candidate, with magnetic field, pressure, and microwaves|Alexander Breindel,Yuhang Deng,Camilla M. Moir,Yuankan Fang,Sheng Ran,Hongbo Lou,Shubin Li,Qiaoshi Zeng,Lei Shu,Christian T. Wolowiec,Ivan K. Schuller,Priscila F. S. Rosa,Zachary Fisk,John Singleton,M. Brian Maple###
(1752742, 1752743)
 Recently, evidence for a conducting surface state below 19 K was reported forthe correlated d<missing VAR>-electron small gap semiconductor FeSi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 19, 'K', 0],[70.0, 60, 'T', 1],[79.0, 7.6, 'GPa', 1],[244.0, 19, 'K', 3],[312.0, 7, 'GPa', 4]

In
###Probing FeSi, a d-electron topological Kondo insulator candidate, with magnetic field, pressure, and microwaves|Alexander Breindel,Yuhang Deng,Camilla M. Moir,Yuankan Fang,Sheng Ran,Hongbo Lou,Shubin Li,Qiaoshi Zeng,Lei Shu,Christian T. Wolowiec,Ivan K. Schuller,Priscila F. S. Rosa,Zachary Fisk,John Singleton,M. Brian Maple###
(1752746, 1752746)
 In the work reportedherein, the conducting surface state and the bulk phase of FeSi were probed viaelectrical resistivity measurements as a function of temperature T<missing VAR>, magneticfield B to 60 T and pressure P to 7.6 GPa, and by means of a magnetic fieldmodulated microwave spectroscopy (MFMMS) technique.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 19, 'K', 1],[67.0, 60, 'T', 0],[76.0, 7.6, 'GPa', 0],[241.0, 19, 'K', 2],[309.0, 7, 'GPa', 3]

FeSi
###Probing FeSi, a d-electron topological Kondo insulator candidate, with magnetic field, pressure, and microwaves|Alexander Breindel,Yuhang Deng,Camilla M. Moir,Yuankan Fang,Sheng Ran,Hongbo Lou,Shubin Li,Qiaoshi Zeng,Lei Shu,Christian T. Wolowiec,Ivan K. Schuller,Priscila F. S. Rosa,Zachary Fisk,John Singleton,M. Brian Maple###
(1752776, 1752777)
 In the work reportedherein, the conducting surface state and the bulk phase of FeSi were probed viaelectrical resistivity measurements as a function of temperature T<missing VAR>, magneticfield B to 60 T and pressure P to 7.6 GPa, and by means of a magnetic fieldmodulated microwave spectroscopy (MFMMS) technique.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 19, 'K', 1],[36.0, 60, 'T', 0],[45.0, 7.6, 'GPa', 0],[210.0, 19, 'K', 2],[278.0, 7, 'GPa', 3]

B
###Probing FeSi, a d-electron topological Kondo insulator candidate, with magnetic field, pressure, and microwaves|Alexander Breindel,Yuhang Deng,Camilla M. Moir,Yuankan Fang,Sheng Ran,Hongbo Lou,Shubin Li,Qiaoshi Zeng,Lei Shu,Christian T. Wolowiec,Ivan K. Schuller,Priscila F. S. Rosa,Zachary Fisk,John Singleton,M. Brian Maple###
(1752810, 1752810)
 In the work reportedherein, the conducting surface state and the bulk phase of FeSi were probed viaelectrical resistivity measurements as a function of temperature T<missing VAR>, magneticfield B to 60 T and pressure P to 7.6 GPa, and by means of a magnetic fieldmodulated microwave spectroscopy (MFMMS) technique.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 19, 'K', 1],[3.0, 60, 'T', 0],[12.0, 7.6, 'GPa', 0],[177.0, 19, 'K', 2],[245.0, 7, 'GPa', 3]

P
###Probing FeSi, a d-electron topological Kondo insulator candidate, with magnetic field, pressure, and microwaves|Alexander Breindel,Yuhang Deng,Camilla M. Moir,Yuankan Fang,Sheng Ran,Hongbo Lou,Shubin Li,Qiaoshi Zeng,Lei Shu,Christian T. Wolowiec,Ivan K. Schuller,Priscila F. S. Rosa,Zachary Fisk,John Singleton,M. Brian Maple###
(1752819, 1752819)
 In the work reportedherein, the conducting surface state and the bulk phase of FeSi were probed viaelectrical resistivity measurements as a function of temperature T<missing VAR>, magneticfield B to 60 T and pressure P to 7.6 GPa, and by means of a magnetic fieldmodulated microwave spectroscopy (MFMMS) technique.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 19, 'K', 1],[6.0, 60, 'T', 0],[3.0, 7.6, 'GPa', 0],[168.0, 19, 'K', 2],[236.0, 7, 'GPa', 3]

S
###Probing FeSi, a d-electron topological Kondo insulator candidate, with magnetic field, pressure, and microwaves|Alexander Breindel,Yuhang Deng,Camilla M. Moir,Yuankan Fang,Sheng Ran,Hongbo Lou,Shubin Li,Qiaoshi Zeng,Lei Shu,Christian T. Wolowiec,Ivan K. Schuller,Priscila F. S. Rosa,Zachary Fisk,John Singleton,M. Brian Maple###
(1752851, 1752851)
 In the work reportedherein, the conducting surface state and the bulk phase of FeSi were probed viaelectrical resistivity measurements as a function of temperature T<missing VAR>, magneticfield B to 60 T and pressure P to 7.6 GPa, and by means of a magnetic fieldmodulated microwave spectroscopy (MFMMS) technique.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 19, 'K', 1],[38.0, 60, 'T', 0],[29.0, 7.6, 'GPa', 0],[136.0, 19, 'K', 2],[204.0, 7, 'GPa', 3]

FeSi
###Probing FeSi, a d-electron topological Kondo insulator candidate, with magnetic field, pressure, and microwaves|Alexander Breindel,Yuhang Deng,Camilla M. Moir,Yuankan Fang,Sheng Ran,Hongbo Lou,Shubin Li,Qiaoshi Zeng,Lei Shu,Christian T. Wolowiec,Ivan K. Schuller,Priscila F. S. Rosa,Zachary Fisk,John Singleton,M. Brian Maple###
(1752863, 1752864)
 The properties of FeSi werealso compared to those of the Kondo insulator SmB6 to address the question ofwhether FeSi is a d<missing VAR>-electron analogue of an f<missing VAR>-electron Kondo insulator and, inaddition, a topological Kondo insulator.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 19, 'K', 2],[50.0, 60, 'T', 1],[41.0, 7.6, 'GPa', 1],[123.0, 19, 'K', 1],[191.0, 7, 'GPa', 2]

SmB6
###Probing FeSi, a d-electron topological Kondo insulator candidate, with magnetic field, pressure, and microwaves|Alexander Breindel,Yuhang Deng,Camilla M. Moir,Yuankan Fang,Sheng Ran,Hongbo Lou,Shubin Li,Qiaoshi Zeng,Lei Shu,Christian T. Wolowiec,Ivan K. Schuller,Priscila F. S. Rosa,Zachary Fisk,John Singleton,M. Brian Maple###
(1752885, 1752887)
 The properties of FeSi werealso compared to those of the Kondo insulator SmB6 to address the question ofwhether FeSi is a d<missing VAR>-electron analogue of an f<missing VAR>-electron Kondo insulator and, inaddition, a topological Kondo insulator.
Featurization terminated normally.
0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 19, 'K', 2],[72.0, 60, 'T', 1],[63.0, 7.6, 'GPa', 1],[100.0, 19, 'K', 1],[168.0, 7, 'GPa', 2]

FeSi
###Probing FeSi, a d-electron topological Kondo insulator candidate, with magnetic field, pressure, and microwaves|Alexander Breindel,Yuhang Deng,Camilla M. Moir,Yuankan Fang,Sheng Ran,Hongbo Lou,Shubin Li,Qiaoshi Zeng,Lei Shu,Christian T. Wolowiec,Ivan K. Schuller,Priscila F. S. Rosa,Zachary Fisk,John Singleton,M. Brian Maple###
(1752902, 1752903)
 The properties of FeSi werealso compared to those of the Kondo insulator SmB6 to address the question ofwhether FeSi is a d<missing VAR>-electron analogue of an f<missing VAR>-electron Kondo insulator and, inaddition, a topological Kondo insulator.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[183.0, 19, 'K', 2],[89.0, 60, 'T', 1],[80.0, 7.6, 'GPa', 1],[84.0, 19, 'K', 1],[152.0, 7, 'GPa', 2]

FeSi
###Probing FeSi, a d-electron topological Kondo insulator candidate, with magnetic field, pressure, and microwaves|Alexander Breindel,Yuhang Deng,Camilla M. Moir,Yuankan Fang,Sheng Ran,Hongbo Lou,Shubin Li,Qiaoshi Zeng,Lei Shu,Christian T. Wolowiec,Ivan K. Schuller,Priscila F. S. Rosa,Zachary Fisk,John Singleton,M. Brian Maple###
(1752963, 1752964)
 The overall behavior of themagnetoresistance MR of FeSi at temperatures above and below the onsettemperature (T<missing VAR>S) 19 K of the conducting surface state is similar to that ofSmB6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[244.0, 19, 'K', 3],[150.0, 60, 'T', 2],[141.0, 7.6, 'GPa', 2],[23.0, 19, 'K', 0],[91.0, 7, 'GPa', 1]

S
###Probing FeSi, a d-electron topological Kondo insulator candidate, with magnetic field, pressure, and microwaves|Alexander Breindel,Yuhang Deng,Camilla M. Moir,Yuankan Fang,Sheng Ran,Hongbo Lou,Shubin Li,Qiaoshi Zeng,Lei Shu,Christian T. Wolowiec,Ivan K. Schuller,Priscila F. S. Rosa,Zachary Fisk,John Singleton,M. Brian Maple###
(1752985, 1752985)
 The overall behavior of themagnetoresistance MR of FeSi at temperatures above and below the onsettemperature (T<missing VAR>S) 19 K of the conducting surface state is similar to that ofSmB6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[266.0, 19, 'K', 3],[172.0, 60, 'T', 2],[163.0, 7.6, 'GPa', 2],[2.0, 19, 'K', 0],[70.0, 7, 'GPa', 1]

SmB6
###Probing FeSi, a d-electron topological Kondo insulator candidate, with magnetic field, pressure, and microwaves|Alexander Breindel,Yuhang Deng,Camilla M. Moir,Yuankan Fang,Sheng Ran,Hongbo Lou,Shubin Li,Qiaoshi Zeng,Lei Shu,Christian T. Wolowiec,Ivan K. Schuller,Priscila F. S. Rosa,Zachary Fisk,John Singleton,M. Brian Maple###
(1753010, 1753012)
 The overall behavior of themagnetoresistance MR of FeSi at temperatures above and below the onsettemperature (T<missing VAR>S) 19 K of the conducting surface state is similar to that ofSmB6.
Featurization terminated normally.
0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[291.0, 19, 'K', 3],[197.0, 60, 'T', 2],[188.0, 7.6, 'GPa', 2],[23.0, 19, 'K', 0],[43.0, 7, 'GPa', 1]

S
###Probing FeSi, a d-electron topological Kondo insulator candidate, with magnetic field, pressure, and microwaves|Alexander Breindel,Yuhang Deng,Camilla M. Moir,Yuankan Fang,Sheng Ran,Hongbo Lou,Shubin Li,Qiaoshi Zeng,Lei Shu,Christian T. Wolowiec,Ivan K. Schuller,Priscila F. S. Rosa,Zachary Fisk,John Singleton,M. Brian Maple###
(1753082, 1753082)
 The two energy gaps, inferred from the resistivity data in thesemiconducting regime, increase with pressure up to about 7 GPa, followed by adrop which coincides with a sharp suppression of T<missing VAR>S.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[363.0, 19, 'K', 4],[269.0, 60, 'T', 3],[260.0, 7.6, 'GPa', 3],[95.0, 19, 'K', 1],[27.0, 7, 'GPa', 0]

SmB6
###Probing FeSi, a d-electron topological Kondo insulator candidate, with magnetic field, pressure, and microwaves|Alexander Breindel,Yuhang Deng,Camilla M. Moir,Yuankan Fang,Sheng Ran,Hongbo Lou,Shubin Li,Qiaoshi Zeng,Lei Shu,Christian T. Wolowiec,Ivan K. Schuller,Priscila F. S. Rosa,Zachary Fisk,John Singleton,M. Brian Maple###
(1753102, 1753104)
 This behavior is similarto that reported for SmB6, except that the two energy gaps in SmB6 decreasewith pressure before dropping abruptly at T<missing VAR>S.
Featurization terminated normally.
0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[383.0, 19, 'K', 5],[289.0, 60, 'T', 4],[280.0, 7.6, 'GPa', 4],[115.0, 19, 'K', 2],[47.0, 7, 'GPa', 1]

SmB6
###Probing FeSi, a d-electron topological Kondo insulator candidate, with magnetic field, pressure, and microwaves|Alexander Breindel,Yuhang Deng,Camilla M. Moir,Yuankan Fang,Sheng Ran,Hongbo Lou,Shubin Li,Qiaoshi Zeng,Lei Shu,Christian T. Wolowiec,Ivan K. Schuller,Priscila F. S. Rosa,Zachary Fisk,John Singleton,M. Brian Maple###
(1753121, 1753123)
 This behavior is similarto that reported for SmB6, except that the two energy gaps in SmB6 decreasewith pressure before dropping abruptly at T<missing VAR>S.
Featurization terminated normally.
0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[402.0, 19, 'K', 5],[308.0, 60, 'T', 4],[299.0, 7.6, 'GPa', 4],[134.0, 19, 'K', 2],[66.0, 7, 'GPa', 1]

S
###Probing FeSi, a d-electron topological Kondo insulator candidate, with magnetic field, pressure, and microwaves|Alexander Breindel,Yuhang Deng,Camilla M. Moir,Yuankan Fang,Sheng Ran,Hongbo Lou,Shubin Li,Qiaoshi Zeng,Lei Shu,Christian T. Wolowiec,Ivan K. Schuller,Priscila F. S. Rosa,Zachary Fisk,John Singleton,M. Brian Maple###
(1753141, 1753141)
 This behavior is similarto that reported for SmB6, except that the two energy gaps in SmB6 decreasewith pressure before dropping abruptly at T<missing VAR>S.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[422.0, 19, 'K', 5],[328.0, 60, 'T', 4],[319.0, 7.6, 'GPa', 4],[154.0, 19, 'K', 2],[86.0, 7, 'GPa', 1]

S
###Probing FeSi, a d-electron topological Kondo insulator candidate, with magnetic field, pressure, and microwaves|Alexander Breindel,Yuhang Deng,Camilla M. Moir,Yuankan Fang,Sheng Ran,Hongbo Lou,Shubin Li,Qiaoshi Zeng,Lei Shu,Christian T. Wolowiec,Ivan K. Schuller,Priscila F. S. Rosa,Zachary Fisk,John Singleton,M. Brian Maple###
(1753150, 1753150)
 The MFMMS measurements showed asharp feature at T<missing VAR>S (19 K) for FeSi, but no such feature was observed at T<missing VAR>S4.5 K for SmB6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[431.0, 19, 'K', 6],[337.0, 60, 'T', 5],[328.0, 7.6, 'GPa', 5],[163.0, 19, 'K', 3],[95.0, 7, 'GPa', 2]

S
###Probing FeSi, a d-electron topological Kondo insulator candidate, with magnetic field, pressure, and microwaves|Alexander Breindel,Yuhang Deng,Camilla M. Moir,Yuankan Fang,Sheng Ran,Hongbo Lou,Shubin Li,Qiaoshi Zeng,Lei Shu,Christian T. Wolowiec,Ivan K. Schuller,Priscila F. S. Rosa,Zachary Fisk,John Singleton,M. Brian Maple###
(1753166, 1753166)
 The MFMMS measurements showed asharp feature at T<missing VAR>S (19 K) for FeSi, but no such feature was observed at T<missing VAR>S4.5 K for SmB6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[447.0, 19, 'K', 6],[353.0, 60, 'T', 5],[344.0, 7.6, 'GPa', 5],[179.0, 19, 'K', 3],[111.0, 7, 'GPa', 2]

K
###Probing FeSi, a d-electron topological Kondo insulator candidate, with magnetic field, pressure, and microwaves|Alexander Breindel,Yuhang Deng,Camilla M. Moir,Yuankan Fang,Sheng Ran,Hongbo Lou,Shubin Li,Qiaoshi Zeng,Lei Shu,Christian T. Wolowiec,Ivan K. Schuller,Priscila F. S. Rosa,Zachary Fisk,John Singleton,M. Brian Maple###
(1753171, 1753171)
 The MFMMS measurements showed asharp feature at T<missing VAR>S (19 K) for FeSi, but no such feature was observed at T<missing VAR>S4.5 K for SmB6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[452.0, 19, 'K', 6],[358.0, 60, 'T', 5],[349.0, 7.6, 'GPa', 5],[184.0, 19, 'K', 3],[116.0, 7, 'GPa', 2]

FeSi
###Probing FeSi, a d-electron topological Kondo insulator candidate, with magnetic field, pressure, and microwaves|Alexander Breindel,Yuhang Deng,Camilla M. Moir,Yuankan Fang,Sheng Ran,Hongbo Lou,Shubin Li,Qiaoshi Zeng,Lei Shu,Christian T. Wolowiec,Ivan K. Schuller,Priscila F. S. Rosa,Zachary Fisk,John Singleton,M. Brian Maple###
(1753176, 1753177)
 The MFMMS measurements showed asharp feature at T<missing VAR>S (19 K) for FeSi, but no such feature was observed at T<missing VAR>S4.5 K for SmB6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[457.0, 19, 'K', 6],[363.0, 60, 'T', 5],[354.0, 7.6, 'GPa', 5],[189.0, 19, 'K', 3],[121.0, 7, 'GPa', 2]

S
###Probing FeSi, a d-electron topological Kondo insulator candidate, with magnetic field, pressure, and microwaves|Alexander Breindel,Yuhang Deng,Camilla M. Moir,Yuankan Fang,Sheng Ran,Hongbo Lou,Shubin Li,Qiaoshi Zeng,Lei Shu,Christian T. Wolowiec,Ivan K. Schuller,Priscila F. S. Rosa,Zachary Fisk,John Singleton,M. Brian Maple###
(1753195, 1753195)
 The MFMMS measurements showed asharp feature at T<missing VAR>S (19 K) for FeSi, but no such feature was observed at T<missing VAR>S4.5 K for SmB6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[476.0, 19, 'K', 6],[382.0, 60, 'T', 5],[373.0, 7.6, 'GPa', 5],[208.0, 19, 'K', 3],[140.0, 7, 'GPa', 2]

K
###Probing FeSi, a d-electron topological Kondo insulator candidate, with magnetic field, pressure, and microwaves|Alexander Breindel,Yuhang Deng,Camilla M. Moir,Yuankan Fang,Sheng Ran,Hongbo Lou,Shubin Li,Qiaoshi Zeng,Lei Shu,Christian T. Wolowiec,Ivan K. Schuller,Priscila F. S. Rosa,Zachary Fisk,John Singleton,M. Brian Maple###
(1753200, 1753200)
 The MFMMS measurements showed asharp feature at T<missing VAR>S (19 K) for FeSi, but no such feature was observed at T<missing VAR>S4.5 K for SmB6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[481.0, 19, 'K', 6],[387.0, 60, 'T', 5],[378.0, 7.6, 'GPa', 5],[213.0, 19, 'K', 3],[145.0, 7, 'GPa', 2]

SmB6
###Probing FeSi, a d-electron topological Kondo insulator candidate, with magnetic field, pressure, and microwaves|Alexander Breindel,Yuhang Deng,Camilla M. Moir,Yuankan Fang,Sheng Ran,Hongbo Lou,Shubin Li,Qiaoshi Zeng,Lei Shu,Christian T. Wolowiec,Ivan K. Schuller,Priscila F. S. Rosa,Zachary Fisk,John Singleton,M. Brian Maple###
(1753204, 1753206)
 The MFMMS measurements showed asharp feature at T<missing VAR>S (19 K) for FeSi, but no such feature was observed at T<missing VAR>S4.5 K for SmB6.
Featurization terminated normally.
0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[485.0, 19, 'K', 6],[391.0, 60, 'T', 5],[382.0, 7.6, 'GPa', 5],[217.0, 19, 'K', 3],[149.0, 7, 'GPa', 2]

S
###Probing FeSi, a d-electron topological Kondo insulator candidate, with magnetic field, pressure, and microwaves|Alexander Breindel,Yuhang Deng,Camilla M. Moir,Yuankan Fang,Sheng Ran,Hongbo Lou,Shubin Li,Qiaoshi Zeng,Lei Shu,Christian T. Wolowiec,Ivan K. Schuller,Priscila F. S. Rosa,Zachary Fisk,John Singleton,M. Brian Maple###
(1753222, 1753222)
 The absence of a feature at T<missing VAR>S for SmB6 may be due toexperimental issues and will be the subject of a future investigation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[503.0, 19, 'K', 7],[409.0, 60, 'T', 6],[400.0, 7.6, 'GPa', 6],[235.0, 19, 'K', 4],[167.0, 7, 'GPa', 3]

SmB6
###Probing FeSi, a d-electron topological Kondo insulator candidate, with magnetic field, pressure, and microwaves|Alexander Breindel,Yuhang Deng,Camilla M. Moir,Yuankan Fang,Sheng Ran,Hongbo Lou,Shubin Li,Qiaoshi Zeng,Lei Shu,Christian T. Wolowiec,Ivan K. Schuller,Priscila F. S. Rosa,Zachary Fisk,John Singleton,M. Brian Maple###
(1753226, 1753228)
 The absence of a feature at T<missing VAR>S for SmB6 may be due toexperimental issues and will be the subject of a future investigation.
Featurization terminated normally.
0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[507.0, 19, 'K', 7],[413.0, 60, 'T', 6],[404.0, 7.6, 'GPa', 6],[239.0, 19, 'K', 4],[171.0, 7, 'GPa', 3]

Mn3Sn
###Chiral-anomaly-driven magnetotransport in the correlated Weyl magnet Mn$_3$Sn|Shunichiro Kurosawa,Takahiro Tomita,Ikhlas Muhammad,Mingxuan Fu,Akito Sakai,Satoru Nakatsuji###
(1753678, 1753680)
Chiral-anomaly-driven magnetotransport in the correlated Weyl magnet Mn3Sn.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[224.0, 0.053, ',', 4],[227.0, 0.07, ',', 4]

WS
###Chiral-anomaly-driven magnetotransport in the correlated Weyl magnet Mn$_3$Sn|Shunichiro Kurosawa,Takahiro Tomita,Ikhlas Muhammad,Mingxuan Fu,Akito Sakai,Satoru Nakatsuji###
(1753733, 1753734)
 The magnetic Weyl semimetal (WSM) state in the chiralantiferromagnet Mn3Sn emerges with strong electronic correlations, offeringan intriguing arena for exploring the interplay between Weyl fermions andcorrelation physics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[170.0, 0.053, ',', 2],[173.0, 0.07, ',', 2]

Mn3Sn
###Chiral-anomaly-driven magnetotransport in the correlated Weyl magnet Mn$_3$Sn|Shunichiro Kurosawa,Takahiro Tomita,Ikhlas Muhammad,Mingxuan Fu,Akito Sakai,Satoru Nakatsuji###
(1753749, 1753751)
 The magnetic Weyl semimetal (WSM) state in the chiralantiferromagnet Mn3Sn emerges with strong electronic correlations, offeringan intriguing arena for exploring the interplay between Weyl fermions andcorrelation physics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 0.053, ',', 2],[156.0, 0.07, ',', 2]

WS
###Chiral-anomaly-driven magnetotransport in the correlated Weyl magnet Mn$_3$Sn|Shunichiro Kurosawa,Takahiro Tomita,Ikhlas Muhammad,Mingxuan Fu,Akito Sakai,Satoru Nakatsuji###
(1753805, 1753806)
 One prominent characteristic of the WSM<missing VAR> state is thechiral anomaly, yet the potential effects of electronic correlations on thechiral anomaly remain unexplored.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 0.053, ',', 1],[101.0, 0.07, ',', 1]

Mn3
###Chiral-anomaly-driven magnetotransport in the correlated Weyl magnet Mn$_3$Sn|Shunichiro Kurosawa,Takahiro Tomita,Ikhlas Muhammad,Mingxuan Fu,Akito Sakai,Satoru Nakatsuji###
(1753881, 1753882)
 Here, we report a comprehensive study of thein-plane magnetotransport properties of single-crystal Mn3x<missing VAR>Sn1-xwith three different Mn doping levels (x<missing VAR>0.053, 0.070, and 0.090).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 0.053, ',', 0],[25.0, 0.07, ',', 0]

Sn1-x
###Chiral-anomaly-driven magnetotransport in the correlated Weyl magnet Mn$_3$Sn|Shunichiro Kurosawa,Takahiro Tomita,Ikhlas Muhammad,Mingxuan Fu,Akito Sakai,Satoru Nakatsuji###
(1753884, 1753887)
 Here, we report a comprehensive study of thein-plane magnetotransport properties of single-crystal Mn3x<missing VAR>Sn1-xwith three different Mn doping levels (x<missing VAR>0.053, 0.070, and 0.090).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[17.0, 0.053, ',', 0],[20.0, 0.07, ',', 0]

Mn
###Chiral-anomaly-driven magnetotransport in the correlated Weyl magnet Mn$_3$Sn|Shunichiro Kurosawa,Takahiro Tomita,Ikhlas Muhammad,Mingxuan Fu,Akito Sakai,Satoru Nakatsuji###
(1753896, 1753896)
 Here, we report a comprehensive study of thein-plane magnetotransport properties of single-crystal Mn3x<missing VAR>Sn1-xwith three different Mn doping levels (x<missing VAR>0.053, 0.070, and 0.090).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 0.053, ',', 0],[11.0, 0.07, ',', 0]

Mn
###Chiral-anomaly-driven magnetotransport in the correlated Weyl magnet Mn$_3$Sn|Shunichiro Kurosawa,Takahiro Tomita,Ikhlas Muhammad,Mingxuan Fu,Akito Sakai,Satoru Nakatsuji###
(1753921, 1753921)
 The excessMn leads to glassy ferromagnetic behavior and the Kondo effect, aside fromshifting the chemical potential relative to the Weyl nodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 0.053, ',', 1],[14.0, 0.07, ',', 1]

Mn
###Chiral-anomaly-driven magnetotransport in the correlated Weyl magnet Mn$_3$Sn|Shunichiro Kurosawa,Takahiro Tomita,Ikhlas Muhammad,Mingxuan Fu,Akito Sakai,Satoru Nakatsuji###
(1753978, 1753978)
 Thus, systematictuning of the Mn doping level enables us to study the interplay between thespin-fluctuation scatterings, the correlation effect, and the chiral anomaly.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 0.053, ',', 2],[71.0, 0.07, ',', 2]

RuCl3
###Spin sensitive transport in a spin liquid material: revealing a robustness of spin anisotropy|H. Idzuchi,M. Kimata,S. Okamoto,P. Laurell,N. Mohanta,M. Cothrine,S. E. Nagler,D. Mandrus,A. Banerjee,Y. P. Chen###
(1754137, 1754139)
 Alpha-phase (a-) RuCl3 has emerged as a prime candidate for a quantum spinliquid (QSL) that promises exotic quasiparticles relevant for fault-tolerantquantum computation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[189.0, 1.5, 'T', 3],[192.0, 18, 'T', 3]

RuCl3
###Spin sensitive transport in a spin liquid material: revealing a robustness of spin anisotropy|H. Idzuchi,M. Kimata,S. Okamoto,P. Laurell,N. Mohanta,M. Cothrine,S. E. Nagler,D. Mandrus,A. Banerjee,Y. P. Chen###
(1754220, 1754222)
 Here, we report spin sensitive transport measurements toprobe spin correlation in a-RuCl3 using a proximal spin Hall metal platinum(Pt).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 1.5, 'T', 2],[109.0, 18, 'T', 2]

(Pt)
###Spin sensitive transport in a spin liquid material: revealing a robustness of spin anisotropy|H. Idzuchi,M. Kimata,S. Okamoto,P. Laurell,N. Mohanta,M. Cothrine,S. E. Nagler,D. Mandrus,A. Banerjee,Y. P. Chen###
(1754239, 1754241)
 Here, we report spin sensitive transport measurements toprobe spin correlation in a-RuCl3 using a proximal spin Hall metal platinum(Pt).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 1.5, 'T', 2],[90.0, 18, 'T', 2]

S
###Spin sensitive transport in a spin liquid material: revealing a robustness of spin anisotropy|H. Idzuchi,M. Kimata,S. Okamoto,P. Laurell,N. Mohanta,M. Cothrine,S. E. Nagler,D. Mandrus,A. Banerjee,Y. P. Chen###
(1754304, 1754304)
 Both transverse and longitudinal resistivities exhibit oscillations asfunction of the angle between an in-plane magnetic field and the current, akinto previously measured spin Hall magnetoresistance (SMR) in antiferromagnet/Ptheterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 1.5, 'T', 1],[27.0, 18, 'T', 1]

Pt
###Spin sensitive transport in a spin liquid material: revealing a robustness of spin anisotropy|H. Idzuchi,M. Kimata,S. Okamoto,P. Laurell,N. Mohanta,M. Cothrine,S. E. Nagler,D. Mandrus,A. Banerjee,Y. P. Chen###
(1754313, 1754313)
 Both transverse and longitudinal resistivities exhibit oscillations asfunction of the angle between an in-plane magnetic field and the current, akinto previously measured spin Hall magnetoresistance (SMR) in antiferromagnet/Ptheterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 1.5, 'T', 1],[18.0, 18, 'T', 1]

RuCl3
###Spin sensitive transport in a spin liquid material: revealing a robustness of spin anisotropy|H. Idzuchi,M. Kimata,S. Okamoto,P. Laurell,N. Mohanta,M. Cothrine,S. E. Nagler,D. Mandrus,A. Banerjee,Y. P. Chen###
(1754376, 1754378)
 The oscillations are observed from 1.5 T to 18 T, both withinand beyond the magnetic field range where the antiferromagnetic order and QSLstate are reported in a-RuCl3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 1.5, 'T', 0],[45.0, 18, 'T', 0]

S
###Spin sensitive transport in a spin liquid material: revealing a robustness of spin anisotropy|H. Idzuchi,M. Kimata,S. Okamoto,P. Laurell,N. Mohanta,M. Cothrine,S. E. Nagler,D. Mandrus,A. Banerjee,Y. P. Chen###
(1754383, 1754383)
 The SMR oscillations show that spins in a-RuCl3are largely locked to an in-plane quantization axis transverse to the magneticfield, constituting a continuous-symmetry-broken state that does notnecessarily represent a long-range order.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 1.5, 'T', 1],[52.0, 18, 'T', 1]

RuCl3
###Spin sensitive transport in a spin liquid material: revealing a robustness of spin anisotropy|H. Idzuchi,M. Kimata,S. Okamoto,P. Laurell,N. Mohanta,M. Cothrine,S. E. Nagler,D. Mandrus,A. Banerjee,Y. P. Chen###
(1754399, 1754401)
 The SMR oscillations show that spins in a-RuCl3are largely locked to an in-plane quantization axis transverse to the magneticfield, constituting a continuous-symmetry-broken state that does notnecessarily represent a long-range order.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 1.5, 'T', 1],[68.0, 18, 'T', 1]

RuCl3
###Spin sensitive transport in a spin liquid material: revealing a robustness of spin anisotropy|H. Idzuchi,M. Kimata,S. Okamoto,P. Laurell,N. Mohanta,M. Cothrine,S. E. Nagler,D. Mandrus,A. Banerjee,Y. P. Chen###
(1754504, 1754506)
 This robust anisotropy of spin axisuncovers critical energy scales connected with reported QSL signatures ina-RuCl3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[176.0, 1.5, 'T', 2],[173.0, 18, 'T', 2]

S
###Spin sensitive transport in a spin liquid material: revealing a robustness of spin anisotropy|H. Idzuchi,M. Kimata,S. Okamoto,P. Laurell,N. Mohanta,M. Cothrine,S. E. Nagler,D. Mandrus,A. Banerjee,Y. P. Chen###
(1754541, 1754541)
 Simulations suggest a predominantly antiferromagnetic correlation tomoderately high magnetic-fields, that may support the SMR oscillations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[213.0, 1.5, 'T', 3],[210.0, 18, 'T', 3]

RuCl3
###Spin sensitive transport in a spin liquid material: revealing a robustness of spin anisotropy|H. Idzuchi,M. Kimata,S. Okamoto,P. Laurell,N. Mohanta,M. Cothrine,S. E. Nagler,D. Mandrus,A. Banerjee,Y. P. Chen###
(1754565, 1754567)
 Thecoupling of the spin states within a-RuCl3 and Pt demonstrated in ourexperiment opens a transport route to exploring exotic spin phases and devicefunctionalities of QSL materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[237.0, 1.5, 'T', 4],[234.0, 18, 'T', 4]

Pt
###Spin sensitive transport in a spin liquid material: revealing a robustness of spin anisotropy|H. Idzuchi,M. Kimata,S. Okamoto,P. Laurell,N. Mohanta,M. Cothrine,S. E. Nagler,D. Mandrus,A. Banerjee,Y. P. Chen###
(1754571, 1754571)
 Thecoupling of the spin states within a-RuCl3 and Pt demonstrated in ourexperiment opens a transport route to exploring exotic spin phases and devicefunctionalities of QSL materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[243.0, 1.5, 'T', 4],[240.0, 18, 'T', 4]

O
###Magnetoquantum Oscillations in the Specific Heat of a Topological Kondo Insulator|P. G. LaBarre,A. Rydh,J. Palmer-Fortune,J. A. Frothingham,S. T. Hannahs,A. P. Ramirez,N. A. Fortune###
(1754657, 1754657)
 Surprisingly, magnetoquantum oscillations (MQO) characteristic of a metalwith a Fermi surface have been observed in measurements of the topologicalKondo insulator SmB6.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SmB6
###Magnetoquantum Oscillations in the Specific Heat of a Topological Kondo Insulator|P. G. LaBarre,A. Rydh,J. Palmer-Fortune,J. A. Frothingham,S. T. Hannahs,A. P. Ramirez,N. A. Fortune###
(1754698, 1754700)
 Surprisingly, magnetoquantum oscillations (MQO) characteristic of a metalwith a Fermi surface have been observed in measurements of the topologicalKondo insulator SmB6.
Featurization terminated normally.
0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Magnetoquantum Oscillations in the Specific Heat of a Topological Kondo Insulator|P. G. LaBarre,A. Rydh,J. Palmer-Fortune,J. A. Frothingham,S. T. Hannahs,A. P. Ramirez,N. A. Fortune###
(1754703, 1754703)
 As these MQO have only been observed in measurements ofmagnetic torque (d<missing VAR>HvA) and not in measurements of magnetoresistance (SdH), adebate has arisen as to whether the MQO are an extrinsic effect arising fromrare-earth impurities, defects, and/or aluminum inclusions or an intrinsiceffect revealing the existence of charge-neutral excitations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Magnetoquantum Oscillations in the Specific Heat of a Topological Kondo Insulator|P. G. LaBarre,A. Rydh,J. Palmer-Fortune,J. A. Frothingham,S. T. Hannahs,A. P. Ramirez,N. A. Fortune###
(1754709, 1754709)
 As these MQO have only been observed in measurements ofmagnetic torque (d<missing VAR>HvA) and not in measurements of magnetoresistance (SdH), adebate has arisen as to whether the MQO are an extrinsic effect arising fromrare-earth impurities, defects, and/or aluminum inclusions or an intrinsiceffect revealing the existence of charge-neutral excitations.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Magnetoquantum Oscillations in the Specific Heat of a Topological Kondo Insulator|P. G. LaBarre,A. Rydh,J. Palmer-Fortune,J. A. Frothingham,S. T. Hannahs,A. P. Ramirez,N. A. Fortune###
(1754750, 1754750)
 As these MQO have only been observed in measurements ofmagnetic torque (d<missing VAR>HvA) and not in measurements of magnetoresistance (SdH), adebate has arisen as to whether the MQO are an extrinsic effect arising fromrare-earth impurities, defects, and/or aluminum inclusions or an intrinsiceffect revealing the existence of charge-neutral excitations.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Magnetoquantum Oscillations in the Specific Heat of a Topological Kondo Insulator|P. G. LaBarre,A. Rydh,J. Palmer-Fortune,J. A. Frothingham,S. T. Hannahs,A. P. Ramirez,N. A. Fortune###
(1754773, 1754773)
 As these MQO have only been observed in measurements ofmagnetic torque (d<missing VAR>HvA) and not in measurements of magnetoresistance (SdH), adebate has arisen as to whether the MQO are an extrinsic effect arising fromrare-earth impurities, defects, and/or aluminum inclusions or an intrinsiceffect revealing the existence of charge-neutral excitations.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SmB6
###Magnetoquantum Oscillations in the Specific Heat of a Topological Kondo Insulator|P. G. LaBarre,A. Rydh,J. Palmer-Fortune,J. A. Frothingham,S. T. Hannahs,A. P. Ramirez,N. A. Fortune###
(1754864, 1754866)
 We report herethe first observation of magnetoquantum oscillations in the low-temperaturespecific heat of SmB6.
Featurization terminated normally.
0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SmB6
###Magnetoquantum Oscillations in the Specific Heat of a Topological Kondo Insulator|P. G. LaBarre,A. Rydh,J. Palmer-Fortune,J. A. Frothingham,S. T. Hannahs,A. P. Ramirez,N. A. Fortune###
(1754915, 1754917)
 The observed frequencies and their angular dependencefor these flux-grown samples are consistent with previous results based onmagnetic torque for SmB6 but the inferred effective masses are significantlylarger than previously reported.
Featurization terminated normally.
0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Magnetoquantum Oscillations in the Specific Heat of a Topological Kondo Insulator|P. G. LaBarre,A. Rydh,J. Palmer-Fortune,J. A. Frothingham,S. T. Hannahs,A. P. Ramirez,N. A. Fortune###
(1754962, 1754962)
 Such oscillations can only be observed if theMQO are of bulk thermodynamic origin; the measured magnetic-field dependentoscillation amplitude and effective mass allow us to rule out suggestions of anextrinsic, aluminium inclusion-based origin for the MQO.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Magnetoquantum Oscillations in the Specific Heat of a Topological Kondo Insulator|P. G. LaBarre,A. Rydh,J. Palmer-Fortune,J. A. Frothingham,S. T. Hannahs,A. P. Ramirez,N. A. Fortune###
(1755030, 1755030)
 Such oscillations can only be observed if theMQO are of bulk thermodynamic origin; the measured magnetic-field dependentoscillation amplitude and effective mass allow us to rule out suggestions of anextrinsic, aluminium inclusion-based origin for the MQO.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Yb0.5Co3Ge3
###Electronic properties and phase transition in Kagome metal, Yb0.5Co3Ge3|Yaojia Wang,Xiaoping Wang,Gregory T. McCandless,Kulatheepan Thanabalasingam,Heng Wu,Damian Bouwmeester,Herra van der Zant,Mazhar N. Ali,Julia Y. Chan###
(1755058, 1755063)
Electronic properties and phase transition in Kagome metal, Yb0.5Co3Ge3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.46153846153846156,0,0,0,0,0.46153846153846156,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V3Sb5
###Electronic properties and phase transition in Kagome metal, Yb0.5Co3Ge3|Yaojia Wang,Xiaoping Wang,Gregory T. McCandless,Kulatheepan Thanabalasingam,Heng Wu,Damian Bouwmeester,Herra van der Zant,Mazhar N. Ali,Julia Y. Chan###
(1755132, 1755135)
 Recent work on Kagome metals in the AV3Sb5 (A  K, Rb,Cs) family, has shown a multitude of correlation-driven distortions, includingsymmetry breaking charge density waves and nematic superconductivity at lowtemperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.375,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.625,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Electronic properties and phase transition in Kagome metal, Yb0.5Co3Ge3|Yaojia Wang,Xiaoping Wang,Gregory T. McCandless,Kulatheepan Thanabalasingam,Heng Wu,Damian Bouwmeester,Herra van der Zant,Mazhar N. Ali,Julia Y. Chan###
(1755141, 1755141)
 Recent work on Kagome metals in the AV3Sb5 (A  K, Rb,Cs) family, has shown a multitude of correlation-driven distortions, includingsymmetry breaking charge density waves and nematic superconductivity at lowtemperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Rb
###Electronic properties and phase transition in Kagome metal, Yb0.5Co3Ge3|Yaojia Wang,Xiaoping Wang,Gregory T. McCandless,Kulatheepan Thanabalasingam,Heng Wu,Damian Bouwmeester,Herra van der Zant,Mazhar N. Ali,Julia Y. Chan###
(1755144, 1755144)
 Recent work on Kagome metals in the AV3Sb5 (A  K, Rb,Cs) family, has shown a multitude of correlation-driven distortions, includingsymmetry breaking charge density waves and nematic superconductivity at lowtemperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cs
###Electronic properties and phase transition in Kagome metal, Yb0.5Co3Ge3|Yaojia Wang,Xiaoping Wang,Gregory T. McCandless,Kulatheepan Thanabalasingam,Heng Wu,Damian Bouwmeester,Herra van der Zant,Mazhar N. Ali,Julia Y. Chan###
(1755148, 1755148)
 Recent work on Kagome metals in the AV3Sb5 (A  K, Rb,Cs) family, has shown a multitude of correlation-driven distortions, includingsymmetry breaking charge density waves and nematic superconductivity at lowtemperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Yb0.5Co3Ge3
###Electronic properties and phase transition in Kagome metal, Yb0.5Co3Ge3|Yaojia Wang,Xiaoping Wang,Gregory T. McCandless,Kulatheepan Thanabalasingam,Heng Wu,Damian Bouwmeester,Herra van der Zant,Mazhar N. Ali,Julia Y. Chan###
(1755212, 1755217)
 Here we study the new Kagome metal Yb0.5Co3Ge3 and find atemperature-dependent kink in the resistivity that is highly similar to theAV3Sb5 behavior and is commensurate with an in-plane structural distortion ofthe Co Kagome lattice along with a doubling of the c<missing VAR>-axis.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.46153846153846156,0,0,0,0,0.46153846153846156,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V3Sb5
###Electronic properties and phase transition in Kagome metal, Yb0.5Co3Ge3|Yaojia Wang,Xiaoping Wang,Gregory T. McCandless,Kulatheepan Thanabalasingam,Heng Wu,Damian Bouwmeester,Herra van der Zant,Mazhar N. Ali,Julia Y. Chan###
(1755252, 1755255)
 Here we study the new Kagome metal Yb0.5Co3Ge3 and find atemperature-dependent kink in the resistivity that is highly similar to theAV3Sb5 behavior and is commensurate with an in-plane structural distortion ofthe Co Kagome lattice along with a doubling of the c<missing VAR>-axis.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.375,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.625,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Electronic properties and phase transition in Kagome metal, Yb0.5Co3Ge3|Yaojia Wang,Xiaoping Wang,Gregory T. McCandless,Kulatheepan Thanabalasingam,Heng Wu,Damian Bouwmeester,Herra van der Zant,Mazhar N. Ali,Julia Y. Chan###
(1755282, 1755282)
 Here we study the new Kagome metal Yb0.5Co3Ge3 and find atemperature-dependent kink in the resistivity that is highly similar to theAV3Sb5 behavior and is commensurate with an in-plane structural distortion ofthe Co Kagome lattice along with a doubling of the c<missing VAR>-axis.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P6
###Electronic properties and phase transition in Kagome metal, Yb0.5Co3Ge3|Yaojia Wang,Xiaoping Wang,Gregory T. McCandless,Kulatheepan Thanabalasingam,Heng Wu,Damian Bouwmeester,Herra van der Zant,Mazhar N. Ali,Julia Y. Chan###
(1755322, 1755323)
 The space group isfound to lower from P6/mmm to P63/m<missing VAR> below the transition temperature, breakingthe in-plane mirror planes and C6 rotation, while gaining a screw axis alongthe c<missing VAR>-direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P63
###Electronic properties and phase transition in Kagome metal, Yb0.5Co3Ge3|Yaojia Wang,Xiaoping Wang,Gregory T. McCandless,Kulatheepan Thanabalasingam,Heng Wu,Damian Bouwmeester,Herra van der Zant,Mazhar N. Ali,Julia Y. Chan###
(1755329, 1755330)
 The space group isfound to lower from P6/mmm to P63/m<missing VAR> below the transition temperature, breakingthe in-plane mirror planes and C6 rotation, while gaining a screw axis alongthe c<missing VAR>-direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C6
###Electronic properties and phase transition in Kagome metal, Yb0.5Co3Ge3|Yaojia Wang,Xiaoping Wang,Gregory T. McCandless,Kulatheepan Thanabalasingam,Heng Wu,Damian Bouwmeester,Herra van der Zant,Mazhar N. Ali,Julia Y. Chan###
(1755358, 1755359)
 The space group isfound to lower from P6/mmm to P63/m<missing VAR> below the transition temperature, breakingthe in-plane mirror planes and C6 rotation, while gaining a screw axis alongthe c<missing VAR>-direction.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Electronic properties and phase transition in Kagome metal, Yb0.5Co3Ge3|Yaojia Wang,Xiaoping Wang,Gregory T. McCandless,Kulatheepan Thanabalasingam,Heng Wu,Damian Bouwmeester,Herra van der Zant,Mazhar N. Ali,Julia Y. Chan###
(1755384, 1755384)
 At very low temperatures, anisotropic negativemagnetoresistance is observed, which may be related to anisotropic magnetism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PS
###Off-axis electron holography for the direct visualization of perpendicular shape anisotropy in nano-scale 3D magnetic random-access-memory devices|Trevor P. Almeida,Alvaro Palomino,Steven Lequeux,Victor Boureau,Olivier Fruchart,Ioan Lucian Prejbeanu,Bernard Dieny,David Cooper###
(1755522, 1755523)
 Perpendicular shape anisotropy (PSA) and double magnetic tunnel junctions(DMTJ) offer practical solutions to downscale spin-transfer-torque MagneticRandom-Access Memory (STT-MRAM) beyond 20 nm technology nodes, whilst retainingtheir thermal stability and reducing critical currents applied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 3, 'D', 1],[59.0, 20, 'nm', 0],[213.0, 3, 'D', 2],[352.0, 20, 'nm', 4]

S
###Off-axis electron holography for the direct visualization of perpendicular shape anisotropy in nano-scale 3D magnetic random-access-memory devices|Trevor P. Almeida,Alvaro Palomino,Steven Lequeux,Victor Boureau,Olivier Fruchart,Ioan Lucian Prejbeanu,Bernard Dieny,David Cooper###
(1755571, 1755571)
 Perpendicular shape anisotropy (PSA) and double magnetic tunnel junctions(DMTJ) offer practical solutions to downscale spin-transfer-torque MagneticRandom-Access Memory (STT-MRAM) beyond 20 nm technology nodes, whilst retainingtheir thermal stability and reducing critical currents applied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 3, 'D', 1],[11.0, 20, 'nm', 0],[165.0, 3, 'D', 2],[304.0, 20, 'nm', 4]

In
###Off-axis electron holography for the direct visualization of perpendicular shape anisotropy in nano-scale 3D magnetic random-access-memory devices|Trevor P. Almeida,Alvaro Palomino,Steven Lequeux,Victor Boureau,Olivier Fruchart,Ioan Lucian Prejbeanu,Bernard Dieny,David Cooper###
(1755679, 1755679)
 In this paper,we review recent work that was performed on these structures using a range ofadvanced electron microscopy techniques, focusing on aspects specific to the 3Dand nanoscale nature of such elements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[177.0, 3, 'D', 3],[97.0, 20, 'nm', 2],[57.0, 3, 'D', 0],[196.0, 20, 'nm', 2]

SS
###Off-axis electron holography for the direct visualization of perpendicular shape anisotropy in nano-scale 3D magnetic random-access-memory devices|Trevor P. Almeida,Alvaro Palomino,Steven Lequeux,Victor Boureau,Olivier Fruchart,Ioan Lucian Prejbeanu,Bernard Dieny,David Cooper###
(1755773, 1755774)
 We present the methodology for thesystematic transfer of individual SST-MRAM<missing VAR> nano-pillars from large-scale arraysto image their magnetic configurations directly using off-axis electronholography.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[271.0, 3, 'D', 4],[191.0, 20, 'nm', 3],[37.0, 3, 'D', 1],[101.0, 20, 'nm', 1]

PS
###Off-axis electron holography for the direct visualization of perpendicular shape anisotropy in nano-scale 3D magnetic random-access-memory devices|Trevor P. Almeida,Alvaro Palomino,Steven Lequeux,Victor Boureau,Olivier Fruchart,Ioan Lucian Prejbeanu,Bernard Dieny,David Cooper###
(1755877, 1755878)
 We show that improved phase sensitivity through stacking ofelectron holograms can be used to image subtle variations in DMTJs and thethermal stability of < 20 nm PSA-STT-MRAM<missing VAR> nano-pillars during in-situ heating.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[375.0, 3, 'D', 5],[295.0, 20, 'nm', 4],[141.0, 3, 'D', 2],[2.0, 20, 'nm', 0]

S
###Off-axis electron holography for the direct visualization of perpendicular shape anisotropy in nano-scale 3D magnetic random-access-memory devices|Trevor P. Almeida,Alvaro Palomino,Steven Lequeux,Victor Boureau,Olivier Fruchart,Ioan Lucian Prejbeanu,Bernard Dieny,David Cooper###
(1755881, 1755881)
 We show that improved phase sensitivity through stacking ofelectron holograms can be used to image subtle variations in DMTJs and thethermal stability of < 20 nm PSA-STT-MRAM<missing VAR> nano-pillars during in-situ heating.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[379.0, 3, 'D', 5],[299.0, 20, 'nm', 4],[145.0, 3, 'D', 2],[6.0, 20, 'nm', 0]

CoS2
###Scaling of Berry-curvature monopole dominated large linear positive magnetoresistance|Shen Zhang,Yibo Wang,Qingqi Zeng,Jianlei Shen,Xinqi Zheng,Jinying Yang,Zhaosheng Wang,Chuanying Xi,Binbin Wang,Min Zhou,Rongjin Huang,Hongxiang Wei,Yuan Yao,Shouguo Wang,Stuart S. P. Parkin,Claudia Felser,Enke Liu,Baogen Shen###
(1756145, 1756147)
 Here, we report a quantitative scaling modelthat correlates the LPMR with the Berry curvature, based on a ferromagneticWeyl semimetal CoS2 that bears the largest LPMR of over 500% at 2 Kelvin and 9Tesla, among known magnetic topological semimetals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 500, '%', 0],[23.0, 2, 'Kelvin', 0]

In
###Scaling of Berry-curvature monopole dominated large linear positive magnetoresistance|Shen Zhang,Yibo Wang,Qingqi Zeng,Jianlei Shen,Xinqi Zheng,Jinying Yang,Zhaosheng Wang,Chuanying Xi,Binbin Wang,Min Zhou,Rongjin Huang,Hongxiang Wei,Yuan Yao,Shouguo Wang,Stuart S. P. Parkin,Claudia Felser,Enke Liu,Baogen Shen###
(1756191, 1756191)
 In this system, masses ofWeyl nodes existing near the Fermi level, revealed by theoretical calculations,serve as Berry-curvature monopoles and low-effective-mass carriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 500, '%', 1],[21.0, 2, 'Kelvin', 1]

B
###Scaling of Berry-curvature monopole dominated large linear positive magnetoresistance|Shen Zhang,Yibo Wang,Qingqi Zeng,Jianlei Shen,Xinqi Zheng,Jinying Yang,Zhaosheng Wang,Chuanying Xi,Binbin Wang,Min Zhou,Rongjin Huang,Hongxiang Wei,Yuan Yao,Shouguo Wang,Stuart S. P. Parkin,Claudia Felser,Enke Liu,Baogen Shen###
(1756277, 1756277)
 Based onthe Weyl picture, we propose a relation [textMRfrace<missing VAR>hbar BOmegatextF], with B being the applied magnetic field and [OmegatextF] the average Berry curvature near the Fermi surface, and furtherintroduce temperature factor to both MR/B slope (MR per unit field) andanomalous Hall conductivity, which establishes the connection between the modeland experimental measurements.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 500, '%', 2],[107.0, 2, 'Kelvin', 2]

F
###Scaling of Berry-curvature monopole dominated large linear positive magnetoresistance|Shen Zhang,Yibo Wang,Qingqi Zeng,Jianlei Shen,Xinqi Zheng,Jinying Yang,Zhaosheng Wang,Chuanying Xi,Binbin Wang,Min Zhou,Rongjin Huang,Hongxiang Wei,Yuan Yao,Shouguo Wang,Stuart S. P. Parkin,Claudia Felser,Enke Liu,Baogen Shen###
(1756282, 1756282)
 Based onthe Weyl picture, we propose a relation [textMRfrace<missing VAR>hbar BOmegatextF], with B being the applied magnetic field and [OmegatextF] the average Berry curvature near the Fermi surface, and furtherintroduce temperature factor to both MR/B slope (MR per unit field) andanomalous Hall conductivity, which establishes the connection between the modeland experimental measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 500, '%', 2],[112.0, 2, 'Kelvin', 2]

B
###Scaling of Berry-curvature monopole dominated large linear positive magnetoresistance|Shen Zhang,Yibo Wang,Qingqi Zeng,Jianlei Shen,Xinqi Zheng,Jinying Yang,Zhaosheng Wang,Chuanying Xi,Binbin Wang,Min Zhou,Rongjin Huang,Hongxiang Wei,Yuan Yao,Shouguo Wang,Stuart S. P. Parkin,Claudia Felser,Enke Liu,Baogen Shen###
(1756288, 1756288)
 Based onthe Weyl picture, we propose a relation [textMRfrace<missing VAR>hbar BOmegatextF], with B being the applied magnetic field and [OmegatextF] the average Berry curvature near the Fermi surface, and furtherintroduce temperature factor to both MR/B slope (MR per unit field) andanomalous Hall conductivity, which establishes the connection between the modeland experimental measurements.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 500, '%', 2],[118.0, 2, 'Kelvin', 2]

F
###Scaling of Berry-curvature monopole dominated large linear positive magnetoresistance|Shen Zhang,Yibo Wang,Qingqi Zeng,Jianlei Shen,Xinqi Zheng,Jinying Yang,Zhaosheng Wang,Chuanying Xi,Binbin Wang,Min Zhou,Rongjin Huang,Hongxiang Wei,Yuan Yao,Shouguo Wang,Stuart S. P. Parkin,Claudia Felser,Enke Liu,Baogen Shen###
(1756307, 1756307)
 Based onthe Weyl picture, we propose a relation [textMRfrace<missing VAR>hbar BOmegatextF], with B being the applied magnetic field and [OmegatextF] the average Berry curvature near the Fermi surface, and furtherintroduce temperature factor to both MR/B slope (MR per unit field) andanomalous Hall conductivity, which establishes the connection between the modeland experimental measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 500, '%', 2],[137.0, 2, 'Kelvin', 2]

B
###Scaling of Berry-curvature monopole dominated large linear positive magnetoresistance|Shen Zhang,Yibo Wang,Qingqi Zeng,Jianlei Shen,Xinqi Zheng,Jinying Yang,Zhaosheng Wang,Chuanying Xi,Binbin Wang,Min Zhou,Rongjin Huang,Hongxiang Wei,Yuan Yao,Shouguo Wang,Stuart S. P. Parkin,Claudia Felser,Enke Liu,Baogen Shen###
(1756345, 1756345)
 Based onthe Weyl picture, we propose a relation [textMRfrace<missing VAR>hbar BOmegatextF], with B being the applied magnetic field and [OmegatextF] the average Berry curvature near the Fermi surface, and furtherintroduce temperature factor to both MR/B slope (MR per unit field) andanomalous Hall conductivity, which establishes the connection between the modeland experimental measurements.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 500, '%', 2],[175.0, 2, 'Kelvin', 2]

Bi0.85Sb0.15
###Surface states induced weak anti-localization effect in Bi0.85Sb0.15 topological single crystal|Yogesh Kumar,VPS Awana###
(1756584, 1756587)
Surface states induced weak anti-localization effect in Bi0.85Sb0.15 topological single crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.85,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 2, 'K', 2],[172.0, 4250, '%', 4],[177.0, 2, 'K', 4],[180.0, 12, 'T', 4]

(SS)
###Surface states induced weak anti-localization effect in Bi0.85Sb0.15 topological single crystal|Yogesh Kumar,VPS Awana###
(1756613, 1756616)
 We report, an experimental evidence of surface states (SS) drivenmagneto-transport in a Bi0.85Sb0.15 single crystal.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 2, 'K', 1],[143.0, 4250, '%', 3],[148.0, 2, 'K', 3],[151.0, 12, 'T', 3]

Bi0.85Sb0.15
###Surface states induced weak anti-localization effect in Bi0.85Sb0.15 topological single crystal|Yogesh Kumar,VPS Awana###
(1756629, 1756632)
 We report, an experimental evidence of surface states (SS) drivenmagneto-transport in a Bi0.85Sb0.15 single crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.85,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 2, 'K', 1],[127.0, 4250, '%', 3],[132.0, 2, 'K', 3],[135.0, 12, 'T', 3]

Bi0.85Sb0.15
###Surface states induced weak anti-localization effect in Bi0.85Sb0.15 topological single crystal|Yogesh Kumar,VPS Awana###
(1756689, 1756692)
 Detailed high field (up to12T) and low temperature (down to 2K) magneto-transport measurements are beencarried out on the studied Bi0.85Sb0.15 single crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.85,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 2, 'K', 0],[67.0, 4250, '%', 2],[72.0, 2, 'K', 2],[75.0, 12, 'T', 2]

W
###Surface states induced weak anti-localization effect in Bi0.85Sb0.15 topological single crystal|Yogesh Kumar,VPS Awana###
(1756788, 1756788)
 The obtained crystal shows non-saturatingmagnetoresistance (4250%) at 2K and 12T, along with the existence of weak-antilocalization (WAL) effect at around zero magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 2, 'K', 2],[29.0, 4250, '%', 0],[24.0, 2, 'K', 0],[21.0, 12, 'T', 0]

H
###Surface states induced weak anti-localization effect in Bi0.85Sb0.15 topological single crystal|Yogesh Kumar,VPS Awana###
(1756819, 1756819)
 Further, theHikami-Larkin-Nagaoka (HL<missing VAR>N) analysis is performed to analyse the WAL<missing VAR> effect.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 2, 'K', 3],[60.0, 4250, '%', 1],[55.0, 2, 'K', 1],[52.0, 12, 'T', 1]

N
###Surface states induced weak anti-localization effect in Bi0.85Sb0.15 topological single crystal|Yogesh Kumar,VPS Awana###
(1756821, 1756821)
 Further, theHikami-Larkin-Nagaoka (HL<missing VAR>N) analysis is performed to analyse the WAL<missing VAR> effect.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 2, 'K', 3],[62.0, 4250, '%', 1],[57.0, 2, 'K', 1],[54.0, 12, 'T', 1]

W
###Surface states induced weak anti-localization effect in Bi0.85Sb0.15 topological single crystal|Yogesh Kumar,VPS Awana###
(1756836, 1756836)
 Further, theHikami-Larkin-Nagaoka (HL<missing VAR>N) analysis is performed to analyse the WAL<missing VAR> effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[171.0, 2, 'K', 3],[77.0, 4250, '%', 1],[72.0, 2, 'K', 1],[69.0, 12, 'T', 1]

Bi0.85Sb0.15
###Surface states induced weak anti-localization effect in Bi0.85Sb0.15 topological single crystal|Yogesh Kumar,VPS Awana###
(1756895, 1756898)
The prefactor and phase coherence length are deduced at various temperatures,which signified the presence of more than one conduction channel in the studiedBi0.85Sb0.15 single crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.85,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[230.0, 2, 'K', 4],[136.0, 4250, '%', 2],[131.0, 2, 'K', 2],[128.0, 12, 'T', 2]

SS
###Surface states induced weak anti-localization effect in Bi0.85Sb0.15 topological single crystal|Yogesh Kumar,VPS Awana###
(1756967, 1756968)
 The effect of quantum scattering, bulkcontribution from underneath the surface states and defects are been studied byadding various field dependent quadratic, linear and constant terms to the SSdriven HL<missing VAR>N equation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[302.0, 2, 'K', 5],[208.0, 4250, '%', 3],[203.0, 2, 'K', 3],[200.0, 12, 'T', 3]

H
###Surface states induced weak anti-localization effect in Bi0.85Sb0.15 topological single crystal|Yogesh Kumar,VPS Awana###
(1756973, 1756973)
 The effect of quantum scattering, bulkcontribution from underneath the surface states and defects are been studied byadding various field dependent quadratic, linear and constant terms to the SSdriven HL<missing VAR>N equation.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[308.0, 2, 'K', 5],[214.0, 4250, '%', 3],[209.0, 2, 'K', 3],[206.0, 12, 'T', 3]

N
###Surface states induced weak anti-localization effect in Bi0.85Sb0.15 topological single crystal|Yogesh Kumar,VPS Awana###
(1756975, 1756975)
 The effect of quantum scattering, bulkcontribution from underneath the surface states and defects are been studied byadding various field dependent quadratic, linear and constant terms to the SSdriven HL<missing VAR>N equation.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[310.0, 2, 'K', 5],[216.0, 4250, '%', 3],[211.0, 2, 'K', 3],[208.0, 12, 'T', 3]

Bi0.85Sb0.15
###Surface states induced weak anti-localization effect in Bi0.85Sb0.15 topological single crystal|Yogesh Kumar,VPS Awana###
(1757029, 1757032)
 Angledependent magneto-conductivity of the studied Bi0.85Sb0.15 single crystalclearly confirmed the surface states dominated transport in present crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.85,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[364.0, 2, 'K', 7],[270.0, 4250, '%', 5],[265.0, 2, 'K', 5],[262.0, 12, 'T', 5]

Cu3Sn
###de Haas-van Alphen effect and the first-principles study of the possible topological stannide Cu$_3$Sn|Chengxu Liu,Bin Li,Yongheng Ge,Wen-He Jiao,Chuanying Xi,Yi Liu,Chunqiang Xu,Qi Lu,Yunlong Li,Hang-Qiang Qiu,Qin-Qing Zhu,Zhi Ren,Ziming Zhu,Dong Qian,Xianglin Ke,Xiaofeng Xu###
(1757098, 1757100)
de Haas-van Alphen effect and the first-principles study of the possible topological stannide Cu3Sn.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[196.0, 1, 'Tesla', 4],[199.0, 2, 'K', 4]

In
###de Haas-van Alphen effect and the first-principles study of the possible topological stannide Cu$_3$Sn|Chengxu Liu,Bin Li,Yongheng Ge,Wen-He Jiao,Chuanying Xi,Yi Liu,Chunqiang Xu,Qi Lu,Yunlong Li,Hang-Qiang Qiu,Qin-Qing Zhu,Zhi Ren,Ziming Zhu,Dong Qian,Xianglin Ke,Xiaofeng Xu###
(1757169, 1757169)
 Inthis work, we report on the magnetotransport, de Haas-van Alphen (d<missing VAR>HvA)oscillations, and the first-principles calculations of the stannide Cu3Snthat is isostructural with the recently reported topological semimetalAg3Sn.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 1, 'Tesla', 2],[130.0, 2, 'K', 2]

Cu3Sn
###de Haas-van Alphen effect and the first-principles study of the possible topological stannide Cu$_3$Sn|Chengxu Liu,Bin Li,Yongheng Ge,Wen-He Jiao,Chuanying Xi,Yi Liu,Chunqiang Xu,Qi Lu,Yunlong Li,Hang-Qiang Qiu,Qin-Qing Zhu,Zhi Ren,Ziming Zhu,Dong Qian,Xianglin Ke,Xiaofeng Xu###
(1757222, 1757224)
 Inthis work, we report on the magnetotransport, de Haas-van Alphen (d<missing VAR>HvA)oscillations, and the first-principles calculations of the stannide Cu3Snthat is isostructural with the recently reported topological semimetalAg3Sn.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 1, 'Tesla', 2],[75.0, 2, 'K', 2]

Ag3Sn
###de Haas-van Alphen effect and the first-principles study of the possible topological stannide Cu$_3$Sn|Chengxu Liu,Bin Li,Yongheng Ge,Wen-He Jiao,Chuanying Xi,Yi Liu,Chunqiang Xu,Qi Lu,Yunlong Li,Hang-Qiang Qiu,Qin-Qing Zhu,Zhi Ren,Ziming Zhu,Dong Qian,Xianglin Ke,Xiaofeng Xu###
(1757246, 1757248)
 Inthis work, we report on the magnetotransport, de Haas-van Alphen (d<missing VAR>HvA)oscillations, and the first-principles calculations of the stannide Cu3Snthat is isostructural with the recently reported topological semimetalAg3Sn.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 1, 'Tesla', 2],[51.0, 2, 'K', 2]

F
###de Haas-van Alphen effect and the first-principles study of the possible topological stannide Cu$_3$Sn|Chengxu Liu,Bin Li,Yongheng Ge,Wen-He Jiao,Chuanying Xi,Yi Liu,Chunqiang Xu,Qi Lu,Yunlong Li,Hang-Qiang Qiu,Qin-Qing Zhu,Zhi Ren,Ziming Zhu,Dong Qian,Xianglin Ke,Xiaofeng Xu###
(1757313, 1757313)
Clear d<missing VAR>HvA oscillations were observed under a field as low as 1 Tesla at 2 K,with three major oscillation frequencies Falpha8.74 T<missing VAR>,Fbeta150.19 T<missing VAR> and Fgamma229.66 T<missing VAR> and extremely small effectivemasses.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 1, 'Tesla', 0],[14.0, 2, 'K', 0]

F
###de Haas-van Alphen effect and the first-principles study of the possible topological stannide Cu$_3$Sn|Chengxu Liu,Bin Li,Yongheng Ge,Wen-He Jiao,Chuanying Xi,Yi Liu,Chunqiang Xu,Qi Lu,Yunlong Li,Hang-Qiang Qiu,Qin-Qing Zhu,Zhi Ren,Ziming Zhu,Dong Qian,Xianglin Ke,Xiaofeng Xu###
(1757321, 1757321)
Clear d<missing VAR>HvA oscillations were observed under a field as low as 1 Tesla at 2 K,with three major oscillation frequencies Falpha8.74 T<missing VAR>,Fbeta150.19 T<missing VAR> and Fgamma229.66 T<missing VAR> and extremely small effectivemasses.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 1, 'Tesla', 0],[22.0, 2, 'K', 0]

F
###de Haas-van Alphen effect and the first-principles study of the possible topological stannide Cu$_3$Sn|Chengxu Liu,Bin Li,Yongheng Ge,Wen-He Jiao,Chuanying Xi,Yi Liu,Chunqiang Xu,Qi Lu,Yunlong Li,Hang-Qiang Qiu,Qin-Qing Zhu,Zhi Ren,Ziming Zhu,Dong Qian,Xianglin Ke,Xiaofeng Xu###
(1757329, 1757329)
Clear d<missing VAR>HvA oscillations were observed under a field as low as 1 Tesla at 2 K,with three major oscillation frequencies Falpha8.74 T<missing VAR>,Fbeta150.19 T<missing VAR> and Fgamma229.66 T<missing VAR> and extremely small effectivemasses.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 1, 'Tesla', 0],[30.0, 2, 'K', 0]

Cu3Sn
###de Haas-van Alphen effect and the first-principles study of the possible topological stannide Cu$_3$Sn|Chengxu Liu,Bin Li,Yongheng Ge,Wen-He Jiao,Chuanying Xi,Yi Liu,Chunqiang Xu,Qi Lu,Yunlong Li,Hang-Qiang Qiu,Qin-Qing Zhu,Zhi Ren,Ziming Zhu,Dong Qian,Xianglin Ke,Xiaofeng Xu###
(1757448, 1757450)
 These results collectively suggest that Cu3Sn, in analogy to itshomologue Ag3Sn, may be another intermetallic stannide hosting topologicalDirac fermions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 1, 'Tesla', 3],[149.0, 2, 'K', 3]

Ag3Sn
###de Haas-van Alphen effect and the first-principles study of the possible topological stannide Cu$_3$Sn|Chengxu Liu,Bin Li,Yongheng Ge,Wen-He Jiao,Chuanying Xi,Yi Liu,Chunqiang Xu,Qi Lu,Yunlong Li,Hang-Qiang Qiu,Qin-Qing Zhu,Zhi Ren,Ziming Zhu,Dong Qian,Xianglin Ke,Xiaofeng Xu###
(1757464, 1757466)
 These results collectively suggest that Cu3Sn, in analogy to itshomologue Ag3Sn, may be another intermetallic stannide hosting topologicalDirac fermions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[168.0, 1, 'Tesla', 3],[165.0, 2, 'K', 3]

CoSi
###Shubnikov-de Haas and de Haas-van Alphen oscillation in Czochralski grown CoSi single crystal|Souvik Sasmal,Gourav Dwari,Bishal Baran Maity,Vikas Saini,Rajib Mondal,A. Thamizhavel###
(1757521, 1757522)
Shubnikov-de Haas and de Haas-van Alphen oscillation in Czochralski grown CoSi single crystal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 2, 'K', 3],[111.0, 610, '%', 3],[137.0, 500, '%', 3],[215.0, 3, 'D', 6],[259.0, 2, 'D', 6],[360.0, 663, 'T', 8]

H
###Shubnikov-de Haas and de Haas-van Alphen oscillation in Czochralski grown CoSi single crystal|Souvik Sasmal,Gourav Dwari,Bishal Baran Maity,Vikas Saini,Rajib Mondal,A. Thamizhavel###
(1757542, 1757542)
 Anisotropic transport, Shubnikov-de Haas (SdH), and de Haas-van Alphen (d<missing VAR>HvA)quantum oscillations studies are reported on a high-quality CoSi single crystalgrown by the Czochralski method.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 2, 'K', 2],[91.0, 610, '%', 2],[117.0, 500, '%', 2],[195.0, 3, 'D', 5],[239.0, 2, 'D', 5],[340.0, 663, 'T', 7]

CoSi
###Shubnikov-de Haas and de Haas-van Alphen oscillation in Czochralski grown CoSi single crystal|Souvik Sasmal,Gourav Dwari,Bishal Baran Maity,Vikas Saini,Rajib Mondal,A. Thamizhavel###
(1757581, 1757582)
 Anisotropic transport, Shubnikov-de Haas (SdH), and de Haas-van Alphen (d<missing VAR>HvA)quantum oscillations studies are reported on a high-quality CoSi single crystalgrown by the Czochralski method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 2, 'K', 2],[51.0, 610, '%', 2],[77.0, 500, '%', 2],[155.0, 3, 'D', 5],[199.0, 2, 'D', 5],[300.0, 663, 'T', 7]

I
###Shubnikov-de Haas and de Haas-van Alphen oscillation in Czochralski grown CoSi single crystal|Souvik Sasmal,Gourav Dwari,Bishal Baran Maity,Vikas Saini,Rajib Mondal,A. Thamizhavel###
(1757638, 1757638)
 Magnetoresistance (MR) at 2 Kreaches 610% for I[111] and B[01-1], whereas it is 500% for I[01-1] andB[111].
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 2, 'K', 0],[5.0, 610, '%', 0],[21.0, 500, '%', 0],[99.0, 3, 'D', 3],[143.0, 2, 'D', 3],[244.0, 663, 'T', 5]

B
###Shubnikov-de Haas and de Haas-van Alphen oscillation in Czochralski grown CoSi single crystal|Souvik Sasmal,Gourav Dwari,Bishal Baran Maity,Vikas Saini,Rajib Mondal,A. Thamizhavel###
(1757645, 1757645)
 Magnetoresistance (MR) at 2 Kreaches 610% for I[111] and B[01-1], whereas it is 500% for I[01-1] andB[111].
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 2, 'K', 0],[12.0, 610, '%', 0],[14.0, 500, '%', 0],[92.0, 3, 'D', 3],[136.0, 2, 'D', 3],[237.0, 663, 'T', 5]

I
###Shubnikov-de Haas and de Haas-van Alphen oscillation in Czochralski grown CoSi single crystal|Souvik Sasmal,Gourav Dwari,Bishal Baran Maity,Vikas Saini,Rajib Mondal,A. Thamizhavel###
(1757664, 1757664)
 Magnetoresistance (MR) at 2 Kreaches 610% for I[111] and B[01-1], whereas it is 500% for I[01-1] andB[111].
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 2, 'K', 0],[31.0, 610, '%', 0],[5.0, 500, '%', 0],[73.0, 3, 'D', 3],[117.0, 2, 'D', 3],[218.0, 663, 'T', 5]

B
###Shubnikov-de Haas and de Haas-van Alphen oscillation in Czochralski grown CoSi single crystal|Souvik Sasmal,Gourav Dwari,Bishal Baran Maity,Vikas Saini,Rajib Mondal,A. Thamizhavel###
(1757674, 1757674)
 Magnetoresistance (MR) at 2 Kreaches 610% for I[111] and B[01-1], whereas it is 500% for I[01-1] andB[111].
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 2, 'K', 0],[41.0, 610, '%', 0],[15.0, 500, '%', 0],[63.0, 3, 'D', 3],[107.0, 2, 'D', 3],[208.0, 663, 'T', 5]

In
###Shubnikov-de Haas and de Haas-van Alphen oscillation in Czochralski grown CoSi single crystal|Souvik Sasmal,Gourav Dwari,Bishal Baran Maity,Vikas Saini,Rajib Mondal,A. Thamizhavel###
(1757736, 1757736)
 In 3D CoSi, theelectron transport lifetime is found to be approximately in the same order asquantum lifetime, whereas in 2D electron gas the long-range scattering drivesthe transport life much larger than the quantum lifetime.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 2, 'K', 3],[103.0, 610, '%', 3],[77.0, 500, '%', 3],[1.0, 3, 'D', 0],[45.0, 2, 'D', 0],[146.0, 663, 'T', 2]

CoSi
###Shubnikov-de Haas and de Haas-van Alphen oscillation in Czochralski grown CoSi single crystal|Souvik Sasmal,Gourav Dwari,Bishal Baran Maity,Vikas Saini,Rajib Mondal,A. Thamizhavel###
(1757739, 1757740)
 In 3D CoSi, theelectron transport lifetime is found to be approximately in the same order asquantum lifetime, whereas in 2D electron gas the long-range scattering drivesthe transport life much larger than the quantum lifetime.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 2, 'K', 3],[106.0, 610, '%', 3],[80.0, 500, '%', 3],[2.0, 3, 'D', 0],[41.0, 2, 'D', 0],[142.0, 663, 'T', 2]

H
###Shubnikov-de Haas and de Haas-van Alphen oscillation in Czochralski grown CoSi single crystal|Souvik Sasmal,Gourav Dwari,Bishal Baran Maity,Vikas Saini,Rajib Mondal,A. Thamizhavel###
(1757827, 1757827)
 From linear and HallSdH oscillations the effective masses and Dingle temperatures have beencalculated.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[199.0, 2, 'K', 4],[194.0, 610, '%', 4],[168.0, 500, '%', 4],[90.0, 3, 'D', 1],[46.0, 2, 'D', 1],[55.0, 663, 'T', 1]

H
###Shubnikov-de Haas and de Haas-van Alphen oscillation in Czochralski grown CoSi single crystal|Souvik Sasmal,Gourav Dwari,Bishal Baran Maity,Vikas Saini,Rajib Mondal,A. Thamizhavel###
(1757894, 1757894)
 The d<missing VAR>HvA oscillation reveals three frequencies at 18 (gamma),558 (alpha) and 663 T (beta)), whereas, SdH oscillation results in onlytwo frequencies alpha and beta.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[266.0, 2, 'K', 5],[261.0, 610, '%', 5],[235.0, 500, '%', 5],[157.0, 3, 'D', 2],[113.0, 2, 'D', 2],[12.0, 663, 'T', 0]

TmMn6Sn6
###Magneto-Transport Properties of Kagome Magnet TmMn$_6$Sn$_6$|Bin Wang,Enkui Yi,Leyi Li,Jianwei Qin,Bing-Feng Hu,Bing Shen,Meng Wang###
(1757972, 1757976)
Magneto-Transport Properties of Kagome Magnet TmMn6Sn6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.46153846153846156,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.46153846153846156,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magneto-Transport Properties of Kagome Magnet TmMn$_6$Sn$_6$|Bin Wang,Enkui Yi,Leyi Li,Jianwei Qin,Bing-Feng Hu,Bing Shen,Meng Wang###
(1758013, 1758013)
 In this paper, we report asystematic study on transport properties of kagome magnet TmMn6Sn6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TmMn6Sn6
###Magneto-Transport Properties of Kagome Magnet TmMn$_6$Sn$_6$|Bin Wang,Enkui Yi,Leyi Li,Jianwei Qin,Bing-Feng Hu,Bing Shen,Meng Wang###
(1758043, 1758047)
 In this paper, we report asystematic study on transport properties of kagome magnet TmMn6Sn6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.46153846153846156,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.46153846153846156,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PH
###Magneto-Transport Properties of Kagome Magnet TmMn$_6$Sn$_6$|Bin Wang,Enkui Yi,Leyi Li,Jianwei Qin,Bing-Feng Hu,Bing Shen,Meng Wang###
(1758169, 1758170)
 The planar applied field drives planar Hall effect(PHE)and anistropic magnetoresisitivity(PAMR) exhibiting sharp disconnections inangular dependent planar resistivity violating the empirical law.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Magneto-Transport Properties of Kagome Magnet TmMn$_6$Sn$_6$|Bin Wang,Enkui Yi,Leyi Li,Jianwei Qin,Bing-Feng Hu,Bing Shen,Meng Wang###
(1758181, 1758181)
 The planar applied field drives planar Hall effect(PHE)and anistropic magnetoresisitivity(PAMR) exhibiting sharp disconnections inangular dependent planar resistivity violating the empirical law.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Magneto-Transport Properties of Kagome Magnet TmMn$_6$Sn$_6$|Bin Wang,Enkui Yi,Leyi Li,Jianwei Qin,Bing-Feng Hu,Bing Shen,Meng Wang###
(1758239, 1758239)
 By using aneffective field, we identify a magnetic transition separating the PAMR into twogroups belonging to various magnetic states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PrBaMn2O6
###Ground-state structure, orbital ordering and metal-insulator transition in double-perovskite PrBaMn2O6|Sergey V. Streltsov,R. E. Ryltsev,N. M. Chtchelkatchev###
(1758408, 1758413)
Ground-state structure, orbital ordering and metal-insulator transition in double-perovskite PrBaMn2O6.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Ground-state structure, orbital ordering and metal-insulator transition in double-perovskite PrBaMn2O6|Sergey V. Streltsov,R. E. Ryltsev,N. M. Chtchelkatchev###
(1758416, 1758416)
 In recent years, A-site ordered half-doped double-perovskite manganites rmR<missing VAR>BaMn2O6 (R<missing VAR>rare earth) have attracted much attention due to theirremarkable physical properties and a prospect of application asmagnetoresistance, multiferroic, and oxygen storage materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BaMn2O6
###Ground-state structure, orbital ordering and metal-insulator transition in double-perovskite PrBaMn2O6|Sergey V. Streltsov,R. E. Ryltsev,N. M. Chtchelkatchev###
(1758443, 1758447)
 In recent years, A-site ordered half-doped double-perovskite manganites rmR<missing VAR>BaMn2O6 (R<missing VAR>rare earth) have attracted much attention due to theirremarkable physical properties and a prospect of application asmagnetoresistance, multiferroic, and oxygen storage materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BaMn2O6
###Ground-state structure, orbital ordering and metal-insulator transition in double-perovskite PrBaMn2O6|Sergey V. Streltsov,R. E. Ryltsev,N. M. Chtchelkatchev###
(1758523, 1758527)
 The nature ofthe ground state in rm R<missing VAR>BaMn2O6 as well as sequence of phase transitionstaking place at cooling are not yet well understood due to complexity in bothexperimental and theoretical studies.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PrBaMn2O6
###Ground-state structure, orbital ordering and metal-insulator transition in double-perovskite PrBaMn2O6|Sergey V. Streltsov,R. E. Ryltsev,N. M. Chtchelkatchev###
(1758605, 1758610)
 Here we address the origin of theground-state structure in PrBaMn2O6 as well as its electronic andmagnetic properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

U
###Ground-state structure, orbital ordering and metal-insulator transition in double-perovskite PrBaMn2O6|Sergey V. Streltsov,R. E. Ryltsev,N. M. Chtchelkatchev###
(1758635, 1758635)
 Utilizing GGAU approach and specially designed strategyto perform structural optimization, we show that the system has two competingAFM<missing VAR>-A and AFM<missing VAR>-CE<missing VAR> magnetic structures with very close energies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Ground-state structure, orbital ordering and metal-insulator transition in double-perovskite PrBaMn2O6|Sergey V. Streltsov,R. E. Ryltsev,N. M. Chtchelkatchev###
(1758675, 1758675)
 Utilizing GGAU approach and specially designed strategyto perform structural optimization, we show that the system has two competingAFM<missing VAR>-A and AFM<missing VAR>-CE<missing VAR> magnetic structures with very close energies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Ground-state structure, orbital ordering and metal-insulator transition in double-perovskite PrBaMn2O6|Sergey V. Streltsov,R. E. Ryltsev,N. M. Chtchelkatchev###
(1758683, 1758683)
 Utilizing GGAU approach and specially designed strategyto perform structural optimization, we show that the system has two competingAFM<missing VAR>-A and AFM<missing VAR>-CE<missing VAR> magnetic structures with very close energies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Ground-state structure, orbital ordering and metal-insulator transition in double-perovskite PrBaMn2O6|Sergey V. Streltsov,R. E. Ryltsev,N. M. Chtchelkatchev###
(1758686, 1758686)
 Utilizing GGAU approach and specially designed strategyto perform structural optimization, we show that the system has two competingAFM<missing VAR>-A and AFM<missing VAR>-CE<missing VAR> magnetic structures with very close energies.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Ground-state structure, orbital ordering and metal-insulator transition in double-perovskite PrBaMn2O6|Sergey V. Streltsov,R. E. Ryltsev,N. M. Chtchelkatchev###
(1758705, 1758705)
 The AFM<missing VAR>-Astructure is a metal, while AFM<missing VAR>-CE<missing VAR> is an insulator and the transition to theinsulating state is accompanied by the charge Mn3/Mn4, and orbital3x<missing VAR>2-r<missing VAR>2/3y<missing VAR>2-r<missing VAR>2 orderings.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Ground-state structure, orbital ordering and metal-insulator transition in double-perovskite PrBaMn2O6|Sergey V. Streltsov,R. E. Ryltsev,N. M. Chtchelkatchev###
(1758723, 1758723)
 The AFM<missing VAR>-Astructure is a metal, while AFM<missing VAR>-CE<missing VAR> is an insulator and the transition to theinsulating state is accompanied by the charge Mn3/Mn4, and orbital3x<missing VAR>2-r<missing VAR>2/3y<missing VAR>2-r<missing VAR>2 orderings.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Ground-state structure, orbital ordering and metal-insulator transition in double-perovskite PrBaMn2O6|Sergey V. Streltsov,R. E. Ryltsev,N. M. Chtchelkatchev###
(1758726, 1758726)
 The AFM<missing VAR>-Astructure is a metal, while AFM<missing VAR>-CE<missing VAR> is an insulator and the transition to theinsulating state is accompanied by the charge Mn3/Mn4, and orbital3x<missing VAR>2-r<missing VAR>2/3y<missing VAR>2-r<missing VAR>2 orderings.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn3/Mn4
###Ground-state structure, orbital ordering and metal-insulator transition in double-perovskite PrBaMn2O6|Sergey V. Streltsov,R. E. Ryltsev,N. M. Chtchelkatchev###
(1758760, 1758764)
 The AFM<missing VAR>-Astructure is a metal, while AFM<missing VAR>-CE<missing VAR> is an insulator and the transition to theinsulating state is accompanied by the charge Mn3/Mn4, and orbital3x<missing VAR>2-r<missing VAR>2/3y<missing VAR>2-r<missing VAR>2 orderings.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

PrBaMn2O6
###Ground-state structure, orbital ordering and metal-insulator transition in double-perovskite PrBaMn2O6|Sergey V. Streltsov,R. E. Ryltsev,N. M. Chtchelkatchev###
(1758857, 1758862)
 Ourfindings give a key to understanding contradictions in available experimentaldata on rm PrBaMn2O6 and opens up the prospects to theoreticalrefinements of ground-state structures in other rm R<missing VAR>BaMn2O6 compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BaMn2O6
###Ground-state structure, orbital ordering and metal-insulator transition in double-perovskite PrBaMn2O6|Sergey V. Streltsov,R. E. Ryltsev,N. M. Chtchelkatchev###
(1758896, 1758900)
 Ourfindings give a key to understanding contradictions in available experimentaldata on rm PrBaMn2O6 and opens up the prospects to theoreticalrefinements of ground-state structures in other rm R<missing VAR>BaMn2O6 compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Rashba spin-orbit interaction induced modulation of magnetic anisotropy|Megha Vagadia,Jaya Prakash Sahoo,Ankit Kumar,Suman Sardar,Tejas Tank,D. S. Rana###
(1758932, 1758932)
 In past few decades, Rashba spin-orbit coupling (SOC) has been successfullyemployed for the emergence of exotic phenomena at the quantum oxide interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 3, 'd', 2]

(SOC)
###Rashba spin-orbit interaction induced modulation of magnetic anisotropy|Megha Vagadia,Jaya Prakash Sahoo,Ankit Kumar,Suman Sardar,Tejas Tank,D. S. Rana###
(1758949, 1758953)
 In past few decades, Rashba spin-orbit coupling (SOC) has been successfullyemployed for the emergence of exotic phenomena at the quantum oxide interfaces.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 3, 'd', 2]

In
###Rashba spin-orbit interaction induced modulation of magnetic anisotropy|Megha Vagadia,Jaya Prakash Sahoo,Ankit Kumar,Suman Sardar,Tejas Tank,D. S. Rana###
(1758988, 1758988)
In these systems, the combined effect of charge transfer, broken symmetries andSOC yields intriguing interfacial magnetism and transport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 3, 'd', 1]

SOC
###Rashba spin-orbit interaction induced modulation of magnetic anisotropy|Megha Vagadia,Jaya Prakash Sahoo,Ankit Kumar,Suman Sardar,Tejas Tank,D. S. Rana###
(1759015, 1759017)
In these systems, the combined effect of charge transfer, broken symmetries andSOC yields intriguing interfacial magnetism and transport properties.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 3, 'd', 1]

CaMnO3/CaIrO3
###Rashba spin-orbit interaction induced modulation of magnetic anisotropy|Megha Vagadia,Jaya Prakash Sahoo,Ankit Kumar,Suman Sardar,Tejas Tank,D. S. Rana###
(1759060, 1759068)
 Here, weprovide an insight to control and tune interfacial phenomena in CaMnO3/CaIrO3based 3d-5d<missing VAR> oxide heterostructures by the charge transfer driven Rashba SOC.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[4.0, 3, 'd', 0]

SOC
###Rashba spin-orbit interaction induced modulation of magnetic anisotropy|Megha Vagadia,Jaya Prakash Sahoo,Ankit Kumar,Suman Sardar,Tejas Tank,D. S. Rana###
(1759093, 1759095)
 Here, weprovide an insight to control and tune interfacial phenomena in CaMnO3/CaIrO3based 3d-5d<missing VAR> oxide heterostructures by the charge transfer driven Rashba SOC.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 3, 'd', 0]

SOC
###Rashba spin-orbit interaction induced modulation of magnetic anisotropy|Megha Vagadia,Jaya Prakash Sahoo,Ankit Kumar,Suman Sardar,Tejas Tank,D. S. Rana###
(1759165, 1759167)
 RashbaSOC reconstructs the Berry curvature and enhances the anomalous Hallconductivity by two orders of magnitude.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 3, 'd', 2]

SOC
###Rashba spin-orbit interaction induced modulation of magnetic anisotropy|Megha Vagadia,Jaya Prakash Sahoo,Ankit Kumar,Suman Sardar,Tejas Tank,D. S. Rana###
(1759220, 1759222)
 From the anisotropy magnetoresistancemeasurements we demonstrate that Rashba SOC is instrumental in tailoringmagnetic anisotropy where magnetization easy-axis rotates from the out-of-planedirection to the in-plane direction.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 3, 'd', 3]

SOC
###Rashba spin-orbit interaction induced modulation of magnetic anisotropy|Megha Vagadia,Jaya Prakash Sahoo,Ankit Kumar,Suman Sardar,Tejas Tank,D. S. Rana###
(1759281, 1759283)
 The ability to tune Rashba SOC andresulting competing magnetic anisotropy provides a route to manipulateelectronic band structure for the origin of non-trivial spin texture useful forspin-orbitronics applications.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[209.0, 3, 'd', 4]

II
###Link between Weyl-fermion chirality and spin texture|Kenta Hagiwara,Philipp Rüßmann,Xin Liang Tan,Ying-Jiun Chen,Keiji Ueno,Vitaliy Feyer,Giovanni Zamborlini,Matteo Jugovac,Shigemasa Suga,Stefan Blügel,Claus Michael Schneider,Christian Tusche###
(1759618, 1759619)
 Here, we give evidencethat the chirality of the Weyl points in the Type-II Weyl semimetal MoTe2 isdirectly linked to the spin texture and orbital angular momentum of theelectron wave functions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoTe2
###Link between Weyl-fermion chirality and spin texture|Kenta Hagiwara,Philipp Rüßmann,Xin Liang Tan,Ying-Jiun Chen,Keiji Ueno,Vitaliy Feyer,Giovanni Zamborlini,Matteo Jugovac,Shigemasa Suga,Stefan Blügel,Claus Michael Schneider,Christian Tusche###
(1759625, 1759627)
 Here, we give evidencethat the chirality of the Weyl points in the Type-II Weyl semimetal MoTe2 isdirectly linked to the spin texture and orbital angular momentum of theelectron wave functions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiCo2O4
###Perspective on Epitaxial NiCo2O4 Film as an Emergent Spintronic Material: Magnetism and Transport Properties|Xiaoshan Xu,Corbyn Mellinger,Zhi Gang Cheng,Xuegang Chen,Xia Hong###
(1759801, 1759805)
Perspective on Epitaxial NiCo2O4 Film as an Emergent Spintronic Material Magnetism and Transport Properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiCo2O4
###Perspective on Epitaxial NiCo2O4 Film as an Emergent Spintronic Material: Magnetism and Transport Properties|Xiaoshan Xu,Corbyn Mellinger,Zhi Gang Cheng,Xuegang Chen,Xia Hong###
(1759836, 1759840)
 The ferrimagnetic inverse spinel NiCo2O4 has attracted extensive researchinterests for its versatile electrochemical properties, robust magnetic order,high conductivity, and fast spin dynamics, as well as its highly tunable naturedue to the closely coupled charge, spin, orbital, lattice, and defect effects.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiCo2O4
###Perspective on Epitaxial NiCo2O4 Film as an Emergent Spintronic Material: Magnetism and Transport Properties|Xiaoshan Xu,Corbyn Mellinger,Zhi Gang Cheng,Xuegang Chen,Xia Hong###
(1759943, 1759947)
Single-crystalline epitaxial thin films of NiCo2O4 present a model system forelucidating the intrinsic physical properties and strong tunability, which arenot viable in bulk single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Perspective on Epitaxial NiCo2O4 Film as an Emergent Spintronic Material: Magnetism and Transport Properties|Xiaoshan Xu,Corbyn Mellinger,Zhi Gang Cheng,Xuegang Chen,Xia Hong###
(1759995, 1759995)
 In this perspective, we discuss the recentadvances in epitaxial NiCo2O4 thin films, focusing on understanding its unusualmagnetic and transport properties in light of crystal structure and electronicstructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiCo2O4
###Perspective on Epitaxial NiCo2O4 Film as an Emergent Spintronic Material: Magnetism and Transport Properties|Xiaoshan Xu,Corbyn Mellinger,Zhi Gang Cheng,Xuegang Chen,Xia Hong###
(1760017, 1760021)
 In this perspective, we discuss the recentadvances in epitaxial NiCo2O4 thin films, focusing on understanding its unusualmagnetic and transport properties in light of crystal structure and electronicstructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiCo2O4
###Perspective on Epitaxial NiCo2O4 Film as an Emergent Spintronic Material: Magnetism and Transport Properties|Xiaoshan Xu,Corbyn Mellinger,Zhi Gang Cheng,Xuegang Chen,Xia Hong###
(1760080, 1760084)
 The perpendicular magnetic anisotropy in compressively strainedNiCo2O4 films is explained by considering the strong spin-lattice coupling,particularly on Co ions.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Perspective on Epitaxial NiCo2O4 Film as an Emergent Spintronic Material: Magnetism and Transport Properties|Xiaoshan Xu,Corbyn Mellinger,Zhi Gang Cheng,Xuegang Chen,Xia Hong###
(1760112, 1760112)
 The perpendicular magnetic anisotropy in compressively strainedNiCo2O4 films is explained by considering the strong spin-lattice coupling,particularly on Co ions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiCo2O4
###Perspective on Epitaxial NiCo2O4 Film as an Emergent Spintronic Material: Magnetism and Transport Properties|Xiaoshan Xu,Corbyn Mellinger,Zhi Gang Cheng,Xuegang Chen,Xia Hong###
(1760165, 1760169)
 NiCo2O4 thin films also exhibit variousmagnetotransport anomalies, including linear magnetoresistance and sign changein anomalous Hall effect, which illustrate the competing effects of bandintrinsic Berry phase and impurity scattering.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiCo2O4
###Perspective on Epitaxial NiCo2O4 Film as an Emergent Spintronic Material: Magnetism and Transport Properties|Xiaoshan Xu,Corbyn Mellinger,Zhi Gang Cheng,Xuegang Chen,Xia Hong###
(1760262, 1760266)
 The fundamental understanding ofthese phenomena will facilitate the functional design of NiCo2O4 thin films fornanoscale spintronic applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Re3Ge7
###Anomalous Transport Properties of Re$_3$Ge$_7$|Anja Rabus,Eundeok Mun###
(1760298, 1760301)
Anomalous Transport Properties of Re3Ge7.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[267.0, 30, 'K', 6],[306.0, 0.04, 'per', 7],[313.0, 300, 'K', 7]

Re3Ge7
###Anomalous Transport Properties of Re$_3$Ge$_7$|Anja Rabus,Eundeok Mun###
(1760312, 1760315)
 Single crystals of intermetallic Re3Ge7 were grown and characterized bymeasuring magnetization, electrical resistivity, Hall coefficient, and specificheat.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[253.0, 30, 'K', 5],[292.0, 0.04, 'per', 6],[299.0, 300, 'K', 6]

K
###Anomalous Transport Properties of Re$_3$Ge$_7$|Anja Rabus,Eundeok Mun###
(1760399, 1760399)
 Aphase transition is indicated by a kink in magnetic susceptibility at Tc 58.5K and is confirmed by a lambda-like anomaly in specific heat.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 30, 'K', 3],[208.0, 0.04, 'per', 4],[215.0, 300, 'K', 4]

In
###Anomalous Transport Properties of Re$_3$Ge$_7$|Anja Rabus,Eundeok Mun###
(1760424, 1760424)
 Inzero-field, the temperature dependence of electrical resistivity rho(T)follows a typical metallic behavior above Tc and sharply increases belowTc, showing a metal-to-insulator-like transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 30, 'K', 2],[183.0, 0.04, 'per', 3],[190.0, 300, 'K', 3]

H
###Anomalous Transport Properties of Re$_3$Ge$_7$|Anja Rabus,Eundeok Mun###
(1760545, 1760545)
 Thetemperature dependence of magnetoresistivity Deltarho  rho (T<missing VAR>, H) -rho (T<missing VAR>, H0) develops a maximum around 30 K, deviating from ordinarymetallic behavior.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 30, 'K', 0],[62.0, 0.04, 'per', 1],[69.0, 300, 'K', 1]

H0
###Anomalous Transport Properties of Re$_3$Ge$_7$|Anja Rabus,Eundeok Mun###
(1760557, 1760558)
 Thetemperature dependence of magnetoresistivity Deltarho  rho (T<missing VAR>, H) -rho (T<missing VAR>, H0) develops a maximum around 30 K, deviating from ordinarymetallic behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 30, 'K', 0],[49.0, 0.04, 'per', 1],[56.0, 300, 'K', 1]

BaMg2Bi2
###Observation of surface superconductivity in a three-dimensional Dirac material|Qi Liu,Peng-Jie Guo,Xiao-Yu Yue,Zhe-Kai Yi,Qing-Xin Dong,Hui Liang,Dan-Dan Wu,Yan Sun,Qiu-Ju Li,Wen-Liang Zhu,Tian-Long Xia,Xue-Feng Sun,Yi-Yan Wang###
(1760819, 1760823)
 Here we report thecoexistence of naturally formed surface superconducting state andthree-dimensional topological Dirac state in single crystals of BaMg2Bi2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 4.77, 'K', 2]

BaMg2Bi2
###Observation of surface superconductivity in a three-dimensional Dirac material|Qi Liu,Peng-Jie Guo,Xiao-Yu Yue,Zhe-Kai Yi,Qing-Xin Dong,Hui Liang,Dan-Dan Wu,Yan Sun,Qiu-Ju Li,Wen-Liang Zhu,Tian-Long Xia,Xue-Feng Sun,Yi-Yan Wang###
(1760850, 1760854)
The electronic structure obtained from the first-principles calculationsdemonstrates that BaMg2Bi2 is an ideal Dirac material, in which the Diracpoint is very close to the Fermi level and no other energy band crosses theFermi level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 4.77, 'K', 1]

BaMg2Bi2
###Observation of surface superconductivity in a three-dimensional Dirac material|Qi Liu,Peng-Jie Guo,Xiao-Yu Yue,Zhe-Kai Yi,Qing-Xin Dong,Hui Liang,Dan-Dan Wu,Yan Sun,Qiu-Ju Li,Wen-Liang Zhu,Tian-Long Xia,Xue-Feng Sun,Yi-Yan Wang###
(1761015, 1761019)
 Our study not only providesBaMg2Bi2 as a suitable platform to study the interplay betweensuperconductivity and topological Dirac state, but also indicates thatMgBi-based materials may be a promising system for exploring newsuperconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 4.77, 'K', 2]

MgBi
###Observation of surface superconductivity in a three-dimensional Dirac material|Qi Liu,Peng-Jie Guo,Xiao-Yu Yue,Zhe-Kai Yi,Qing-Xin Dong,Hui Liang,Dan-Dan Wu,Yan Sun,Qiu-Ju Li,Wen-Liang Zhu,Tian-Long Xia,Xue-Feng Sun,Yi-Yan Wang###
(1761060, 1761061)
 Our study not only providesBaMg2Bi2 as a suitable platform to study the interplay betweensuperconductivity and topological Dirac state, but also indicates thatMgBi-based materials may be a promising system for exploring newsuperconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 4.77, 'K', 2]

MnBi2Te4
###Proximity-induced superconducting gap in the intrinsic magnetic topological insulator MnBi2Te4|Wen-Zheng Xu,Chun-Guang Chu,Zhen-Cun Pan,Jing-Jing Chen,An-Qi Wang,Zhen-Bing Tan,Peng-Fei Zhu,Xing-Guo Ye,Da-Peng Yu,Zhi-Min Liao###
(1761115, 1761119)
Proximity-induced superconducting gap in the intrinsic magnetic topological insulator MnBi2Te4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 10, 'mK', 2],[175.0, 0.1, 'meV', 4]

NbN
###Proximity-induced superconducting gap in the intrinsic magnetic topological insulator MnBi2Te4|Wen-Zheng Xu,Chun-Guang Chu,Zhen-Cun Pan,Jing-Jing Chen,An-Qi Wang,Zhen-Bing Tan,Peng-Fei Zhu,Xing-Guo Ye,Da-Peng Yu,Zhi-Min Liao###
(1761134, 1761135)
 We report magnetotransport measurements in the NbN/ magnetic topologicalinsulator MnBi2Te4 (MBT)/ NbN junction at low temperature.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 10, 'mK', 1],[159.0, 0.1, 'meV', 3]

MnBi2Te4
###Proximity-induced superconducting gap in the intrinsic magnetic topological insulator MnBi2Te4|Wen-Zheng Xu,Chun-Guang Chu,Zhen-Cun Pan,Jing-Jing Chen,An-Qi Wang,Zhen-Bing Tan,Peng-Fei Zhu,Xing-Guo Ye,Da-Peng Yu,Zhi-Min Liao###
(1761145, 1761149)
 We report magnetotransport measurements in the NbN/ magnetic topologicalinsulator MnBi2Te4 (MBT)/ NbN junction at low temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 10, 'mK', 1],[145.0, 0.1, 'meV', 3]

NbN
###Proximity-induced superconducting gap in the intrinsic magnetic topological insulator MnBi2Te4|Wen-Zheng Xu,Chun-Guang Chu,Zhen-Cun Pan,Jing-Jing Chen,An-Qi Wang,Zhen-Bing Tan,Peng-Fei Zhu,Xing-Guo Ye,Da-Peng Yu,Zhi-Min Liao###
(1761158, 1761159)
 We report magnetotransport measurements in the NbN/ magnetic topologicalinsulator MnBi2Te4 (MBT)/ NbN junction at low temperature.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 10, 'mK', 1],[135.0, 0.1, 'meV', 3]

At
###Proximity-induced superconducting gap in the intrinsic magnetic topological insulator MnBi2Te4|Wen-Zheng Xu,Chun-Guang Chu,Zhen-Cun Pan,Jing-Jing Chen,An-Qi Wang,Zhen-Bing Tan,Peng-Fei Zhu,Xing-Guo Ye,Da-Peng Yu,Zhi-Min Liao###
(1761170, 1761170)
 At 10 mK, thenonlinear current-voltage characteristic of the junction shows a tunnelingbehavior, indicating the existence of interfacial potential barriers within theheterostructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[1.0, 10, 'mK', 0],[124.0, 0.1, 'meV', 2]

EuTe2
###Exchange field enhanced upper critical field of the superconductivity in compressed antiferromagnetic EuTe2|Hualei Sun,Liang Qiu,Yifeng Han,Yunwei Zhang,Weiliang Wang,Chaoxin Huang,Naitian Liu,Mengwu Huo,Lisi Li,Hui Liu,Zengjia Liu,Peng Cheng,Hongxia Zhang,Hongliang Wang,Lijie Hao,Man-Rong Li,Dao-Xin Yao,Yusheng Hou,Pengcheng Dai,Meng Wang###
(1761554, 1761556)
Exchange field enhanced upper critical field of the superconductivity in compressed antiferromagnetic EuTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 36.0, 'GPa', 1],[124.0, 16, 'GPa', 4],[199.0, 5, 'p', 5],[253.0, 16, 'GPa', 7]

C
###Exchange field enhanced upper critical field of the superconductivity in compressed antiferromagnetic EuTe2|Hualei Sun,Liang Qiu,Yifeng Han,Yunwei Zhang,Weiliang Wang,Chaoxin Huang,Naitian Liu,Mengwu Huo,Lisi Li,Hui Liu,Zengjia Liu,Peng Cheng,Hongxia Zhang,Hongliang Wang,Lijie Hao,Man-Rong Li,Dao-Xin Yao,Yusheng Hou,Pengcheng Dai,Meng Wang###
(1761573, 1761573)
 We report high pressure studies on the C-type antiferromagnetic semiconductorEuTe2 up to 36.0 GPa.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 36.0, 'GPa', 0],[107.0, 16, 'GPa', 3],[182.0, 5, 'p', 4],[236.0, 16, 'GPa', 6]

EuTe2
###Exchange field enhanced upper critical field of the superconductivity in compressed antiferromagnetic EuTe2|Hualei Sun,Liang Qiu,Yifeng Han,Yunwei Zhang,Weiliang Wang,Chaoxin Huang,Naitian Liu,Mengwu Huo,Lisi Li,Hui Liu,Zengjia Liu,Peng Cheng,Hongxia Zhang,Hongliang Wang,Lijie Hao,Man-Rong Li,Dao-Xin Yao,Yusheng Hou,Pengcheng Dai,Meng Wang###
(1761582, 1761584)
 We report high pressure studies on the C-type antiferromagnetic semiconductorEuTe2 up to 36.0 GPa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 36.0, 'GPa', 0],[96.0, 16, 'GPa', 3],[171.0, 5, 'p', 4],[225.0, 16, 'GPa', 6]

I4
###Exchange field enhanced upper critical field of the superconductivity in compressed antiferromagnetic EuTe2|Hualei Sun,Liang Qiu,Yifeng Han,Yunwei Zhang,Weiliang Wang,Chaoxin Huang,Naitian Liu,Mengwu Huo,Lisi Li,Hui Liu,Zengjia Liu,Peng Cheng,Hongxia Zhang,Hongliang Wang,Lijie Hao,Man-Rong Li,Dao-Xin Yao,Yusheng Hou,Pengcheng Dai,Meng Wang###
(1761602, 1761603)
 A structural transition from the I4/mcm to C2/m<missing VAR> spacegroup is identified at 16 G<missing VAR>Pa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 36.0, 'GPa', 1],[77.0, 16, 'GPa', 2],[152.0, 5, 'p', 3],[206.0, 16, 'GPa', 5]

C2
###Exchange field enhanced upper critical field of the superconductivity in compressed antiferromagnetic EuTe2|Hualei Sun,Liang Qiu,Yifeng Han,Yunwei Zhang,Weiliang Wang,Chaoxin Huang,Naitian Liu,Mengwu Huo,Lisi Li,Hui Liu,Zengjia Liu,Peng Cheng,Hongxia Zhang,Hongliang Wang,Lijie Hao,Man-Rong Li,Dao-Xin Yao,Yusheng Hou,Pengcheng Dai,Meng Wang###
(1761609, 1761610)
 A structural transition from the I4/mcm to C2/m<missing VAR> spacegroup is identified at 16 G<missing VAR>Pa.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 36.0, 'GPa', 1],[70.0, 16, 'GPa', 2],[145.0, 5, 'p', 3],[199.0, 16, 'GPa', 5]

Pa
###Exchange field enhanced upper critical field of the superconductivity in compressed antiferromagnetic EuTe2|Hualei Sun,Liang Qiu,Yifeng Han,Yunwei Zhang,Weiliang Wang,Chaoxin Huang,Naitian Liu,Mengwu Huo,Lisi Li,Hui Liu,Zengjia Liu,Peng Cheng,Hongxia Zhang,Hongliang Wang,Lijie Hao,Man-Rong Li,Dao-Xin Yao,Yusheng Hou,Pengcheng Dai,Meng Wang###
(1761628, 1761628)
 A structural transition from the I4/mcm to C2/m<missing VAR> spacegroup is identified at 16 G<missing VAR>Pa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 36.0, 'GPa', 1],[52.0, 16, 'GPa', 2],[127.0, 5, 'p', 3],[181.0, 16, 'GPa', 5]

Pa
###Exchange field enhanced upper critical field of the superconductivity in compressed antiferromagnetic EuTe2|Hualei Sun,Liang Qiu,Yifeng Han,Yunwei Zhang,Weiliang Wang,Chaoxin Huang,Naitian Liu,Mengwu Huo,Lisi Li,Hui Liu,Zengjia Liu,Peng Cheng,Hongxia Zhang,Hongliang Wang,Lijie Hao,Man-Rong Li,Dao-Xin Yao,Yusheng Hou,Pengcheng Dai,Meng Wang###
(1761642, 1761642)
 Superconductivity is discovered above 5 G<missing VAR>Pa inboth the I4/mcm and C2/m<missing VAR> space groups.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 36.0, 'GPa', 2],[38.0, 16, 'GPa', 1],[113.0, 5, 'p', 2],[167.0, 16, 'GPa', 4]

I4
###Exchange field enhanced upper critical field of the superconductivity in compressed antiferromagnetic EuTe2|Hualei Sun,Liang Qiu,Yifeng Han,Yunwei Zhang,Weiliang Wang,Chaoxin Huang,Naitian Liu,Mengwu Huo,Lisi Li,Hui Liu,Zengjia Liu,Peng Cheng,Hongxia Zhang,Hongliang Wang,Lijie Hao,Man-Rong Li,Dao-Xin Yao,Yusheng Hou,Pengcheng Dai,Meng Wang###
(1761651, 1761652)
 Superconductivity is discovered above 5 G<missing VAR>Pa inboth the I4/mcm and C2/m<missing VAR> space groups.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 36.0, 'GPa', 2],[28.0, 16, 'GPa', 1],[103.0, 5, 'p', 2],[157.0, 16, 'GPa', 4]

C2
###Exchange field enhanced upper critical field of the superconductivity in compressed antiferromagnetic EuTe2|Hualei Sun,Liang Qiu,Yifeng Han,Yunwei Zhang,Weiliang Wang,Chaoxin Huang,Naitian Liu,Mengwu Huo,Lisi Li,Hui Liu,Zengjia Liu,Peng Cheng,Hongxia Zhang,Hongliang Wang,Lijie Hao,Man-Rong Li,Dao-Xin Yao,Yusheng Hou,Pengcheng Dai,Meng Wang###
(1761658, 1761659)
 Superconductivity is discovered above 5 G<missing VAR>Pa inboth the I4/mcm and C2/m<missing VAR> space groups.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 36.0, 'GPa', 2],[21.0, 16, 'GPa', 1],[96.0, 5, 'p', 2],[150.0, 16, 'GPa', 4]

In
###Exchange field enhanced upper critical field of the superconductivity in compressed antiferromagnetic EuTe2|Hualei Sun,Liang Qiu,Yifeng Han,Yunwei Zhang,Weiliang Wang,Chaoxin Huang,Naitian Liu,Mengwu Huo,Lisi Li,Hui Liu,Zengjia Liu,Peng Cheng,Hongxia Zhang,Hongliang Wang,Lijie Hao,Man-Rong Li,Dao-Xin Yao,Yusheng Hou,Pengcheng Dai,Meng Wang###
(1761668, 1761668)
 In the low-pressure phase (< 16 GPa),the antiferromagnetic transition temperature is enhanced with increasingpressure due to the enhanced magnetic exchange interactions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 36.0, 'GPa', 3],[12.0, 16, 'GPa', 0],[87.0, 5, 'p', 1],[141.0, 16, 'GPa', 3]

Eu2
###Exchange field enhanced upper critical field of the superconductivity in compressed antiferromagnetic EuTe2|Hualei Sun,Liang Qiu,Yifeng Han,Yunwei Zhang,Weiliang Wang,Chaoxin Huang,Naitian Liu,Mengwu Huo,Lisi Li,Hui Liu,Zengjia Liu,Peng Cheng,Hongxia Zhang,Hongliang Wang,Lijie Hao,Man-Rong Li,Dao-Xin Yao,Yusheng Hou,Pengcheng Dai,Meng Wang###
(1761740, 1761741)
 Magnetoresistancemeasurements indicate an interplay between the local moments of Eu2 and theconduction electrons of Te 5p orbits.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 36.0, 'GPa', 4],[60.0, 16, 'GPa', 1],[14.0, 5, 'p', 0],[68.0, 16, 'GPa', 2]

Te
###Exchange field enhanced upper critical field of the superconductivity in compressed antiferromagnetic EuTe2|Hualei Sun,Liang Qiu,Yifeng Han,Yunwei Zhang,Weiliang Wang,Chaoxin Huang,Naitian Liu,Mengwu Huo,Lisi Li,Hui Liu,Zengjia Liu,Peng Cheng,Hongxia Zhang,Hongliang Wang,Lijie Hao,Man-Rong Li,Dao-Xin Yao,Yusheng Hou,Pengcheng Dai,Meng Wang###
(1761754, 1761754)
 Magnetoresistancemeasurements indicate an interplay between the local moments of Eu2 and theconduction electrons of Te 5p orbits.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 36.0, 'GPa', 4],[74.0, 16, 'GPa', 1],[1.0, 5, 'p', 0],[55.0, 16, 'GPa', 2]

EuTe2
###Exchange field enhanced upper critical field of the superconductivity in compressed antiferromagnetic EuTe2|Hualei Sun,Liang Qiu,Yifeng Han,Yunwei Zhang,Weiliang Wang,Chaoxin Huang,Naitian Liu,Mengwu Huo,Lisi Li,Hui Liu,Zengjia Liu,Peng Cheng,Hongxia Zhang,Hongliang Wang,Lijie Hao,Man-Rong Li,Dao-Xin Yao,Yusheng Hou,Pengcheng Dai,Meng Wang###
(1761813, 1761815)
 Across the structuraltransition to the high-pressure phase (> 16 GPa), EuTe2 becomes nonmagnetic andthe superconducting transition temperature evolves smoothly with the uppercritical field below the Pauli limit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[224.0, 36.0, 'GPa', 6],[133.0, 16, 'GPa', 3],[58.0, 5, 'p', 2],[4.0, 16, 'GPa', 0]

EuTe2
###Exchange field enhanced upper critical field of the superconductivity in compressed antiferromagnetic EuTe2|Hualei Sun,Liang Qiu,Yifeng Han,Yunwei Zhang,Weiliang Wang,Chaoxin Huang,Naitian Liu,Mengwu Huo,Lisi Li,Hui Liu,Zengjia Liu,Peng Cheng,Hongxia Zhang,Hongliang Wang,Lijie Hao,Man-Rong Li,Dao-Xin Yao,Yusheng Hou,Pengcheng Dai,Meng Wang###
(1761872, 1761874)
 Therefore, the high upper critical fieldof EuTe2 in the low-pressure phase is due to the exchange field compensationeffect of the Eu magnetic order and the superconductivity in both structuresmay arise in the framework of the BCS theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[283.0, 36.0, 'GPa', 7],[192.0, 16, 'GPa', 4],[117.0, 5, 'p', 3],[63.0, 16, 'GPa', 1]

Eu
###Exchange field enhanced upper critical field of the superconductivity in compressed antiferromagnetic EuTe2|Hualei Sun,Liang Qiu,Yifeng Han,Yunwei Zhang,Weiliang Wang,Chaoxin Huang,Naitian Liu,Mengwu Huo,Lisi Li,Hui Liu,Zengjia Liu,Peng Cheng,Hongxia Zhang,Hongliang Wang,Lijie Hao,Man-Rong Li,Dao-Xin Yao,Yusheng Hou,Pengcheng Dai,Meng Wang###
(1761907, 1761907)
 Therefore, the high upper critical fieldof EuTe2 in the low-pressure phase is due to the exchange field compensationeffect of the Eu magnetic order and the superconductivity in both structuresmay arise in the framework of the BCS theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[318.0, 36.0, 'GPa', 7],[227.0, 16, 'GPa', 4],[152.0, 5, 'p', 3],[98.0, 16, 'GPa', 1]

BCS
###Exchange field enhanced upper critical field of the superconductivity in compressed antiferromagnetic EuTe2|Hualei Sun,Liang Qiu,Yifeng Han,Yunwei Zhang,Weiliang Wang,Chaoxin Huang,Naitian Liu,Mengwu Huo,Lisi Li,Hui Liu,Zengjia Liu,Peng Cheng,Hongxia Zhang,Hongliang Wang,Lijie Hao,Man-Rong Li,Dao-Xin Yao,Yusheng Hou,Pengcheng Dai,Meng Wang###
(1761940, 1761942)
 Therefore, the high upper critical fieldof EuTe2 in the low-pressure phase is due to the exchange field compensationeffect of the Eu magnetic order and the superconductivity in both structuresmay arise in the framework of the BCS theory.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[351.0, 36.0, 'GPa', 7],[260.0, 16, 'GPa', 4],[185.0, 5, 'p', 3],[131.0, 16, 'GPa', 1]

(P)
###Nodal superconducting exchange coupling|Angelo Di Bernardo,Sachio Komori,Giorgio Livanas,Giorgio Divitini,Paola Gentile,Mario Cuoco,Jason W. A. Robinson###
(1762026, 1762028)
 A change ofmagnetization-alignment in such a superconducting spin-valve from parallel (P)to antiparallel (AP) creates a positive shift in the superconducting transitiontemperature (DeltaTc) due to an interplay of the magnetic exchange energyand the superconducting condensate.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[268.0, 2, 'K', 3]

P
###Nodal superconducting exchange coupling|Angelo Di Bernardo,Sachio Komori,Giorgio Livanas,Giorgio Divitini,Paola Gentile,Mario Cuoco,Jason W. A. Robinson###
(1762037, 1762037)
 A change ofmagnetization-alignment in such a superconducting spin-valve from parallel (P)to antiparallel (AP) creates a positive shift in the superconducting transitiontemperature (DeltaTc) due to an interplay of the magnetic exchange energyand the superconducting condensate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[259.0, 2, 'K', 3]

Tc
###Nodal superconducting exchange coupling|Angelo Di Bernardo,Sachio Komori,Giorgio Livanas,Giorgio Divitini,Paola Gentile,Mario Cuoco,Jason W. A. Robinson###
(1762061, 1762061)
 A change ofmagnetization-alignment in such a superconducting spin-valve from parallel (P)to antiparallel (AP) creates a positive shift in the superconducting transitiontemperature (DeltaTc) due to an interplay of the magnetic exchange energyand the superconducting condensate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[235.0, 2, 'K', 3]

Tc
###Nodal superconducting exchange coupling|Angelo Di Bernardo,Sachio Komori,Giorgio Livanas,Giorgio Divitini,Paola Gentile,Mario Cuoco,Jason W. A. Robinson###
(1762099, 1762099)
 The magnitude of DeltaTc scalesinversely with the superconductor thickness (d<missing VAR>S) and is zero when d<missing VAR>S exceedsthe superconducting coherence length (xi) as predicted by de Gennes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[197.0, 2, 'K', 2]

S
###Nodal superconducting exchange coupling|Angelo Di Bernardo,Sachio Komori,Giorgio Livanas,Giorgio Divitini,Paola Gentile,Mario Cuoco,Jason W. A. Robinson###
(1762116, 1762116)
 The magnitude of DeltaTc scalesinversely with the superconductor thickness (d<missing VAR>S) and is zero when d<missing VAR>S exceedsthe superconducting coherence length (xi) as predicted by de Gennes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[180.0, 2, 'K', 2]

S
###Nodal superconducting exchange coupling|Angelo Di Bernardo,Sachio Komori,Giorgio Livanas,Giorgio Divitini,Paola Gentile,Mario Cuoco,Jason W. A. Robinson###
(1762128, 1762128)
 The magnitude of DeltaTc scalesinversely with the superconductor thickness (d<missing VAR>S) and is zero when d<missing VAR>S exceedsthe superconducting coherence length (xi) as predicted by de Gennes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[168.0, 2, 'K', 2]

Tc
###Nodal superconducting exchange coupling|Angelo Di Bernardo,Sachio Komori,Giorgio Livanas,Giorgio Divitini,Paola Gentile,Mario Cuoco,Jason W. A. Robinson###
(1762207, 1762207)
 Here,we report a superconducting spin-valve effect involving a different underlyingmechanism that goes beyond de Gennes in which magnetization-alignment andDeltaTc are determined by the nodal quasiparticle-excitation states on theFermi surface of the d<missing VAR>-wave superconductor YBa2Cu3O7-delta (YBCO) grownbetween insulating layers of ferromagnetic Pr0.8Ca0.2MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 2, 'K', 1]

YBa2Cu3O7
###Nodal superconducting exchange coupling|Angelo Di Bernardo,Sachio Komori,Giorgio Livanas,Giorgio Divitini,Paola Gentile,Mario Cuoco,Jason W. A. Robinson###
(1762244, 1762250)
 Here,we report a superconducting spin-valve effect involving a different underlyingmechanism that goes beyond de Gennes in which magnetization-alignment andDeltaTc are determined by the nodal quasiparticle-excitation states on theFermi surface of the d<missing VAR>-wave superconductor YBa2Cu3O7-delta (YBCO) grownbetween insulating layers of ferromagnetic Pr0.8Ca0.2MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5384615384615384,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23076923076923078,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15384615384615385,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 2, 'K', 1]

(YBCO)
###Nodal superconducting exchange coupling|Angelo Di Bernardo,Sachio Komori,Giorgio Livanas,Giorgio Divitini,Paola Gentile,Mario Cuoco,Jason W. A. Robinson###
(1762254, 1762259)
 Here,we report a superconducting spin-valve effect involving a different underlyingmechanism that goes beyond de Gennes in which magnetization-alignment andDeltaTc are determined by the nodal quasiparticle-excitation states on theFermi surface of the d<missing VAR>-wave superconductor YBa2Cu3O7-delta (YBCO) grownbetween insulating layers of ferromagnetic Pr0.8Ca0.2MnO3.
Featurization successful!
0,0,0,0,0.25,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 2, 'K', 1]

Pr0.8Ca0.2MnO3
###Nodal superconducting exchange coupling|Angelo Di Bernardo,Sachio Komori,Giorgio Livanas,Giorgio Divitini,Paola Gentile,Mario Cuoco,Jason W. A. Robinson###
(1762274, 1762280)
 Here,we report a superconducting spin-valve effect involving a different underlyingmechanism that goes beyond de Gennes in which magnetization-alignment andDeltaTc are determined by the nodal quasiparticle-excitation states on theFermi surface of the d<missing VAR>-wave superconductor YBa2Cu3O7-delta (YBCO) grownbetween insulating layers of ferromagnetic Pr0.8Ca0.2MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.04,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 2, 'K', 1]

Tc
###Nodal superconducting exchange coupling|Angelo Di Bernardo,Sachio Komori,Giorgio Livanas,Giorgio Divitini,Paola Gentile,Mario Cuoco,Jason W. A. Robinson###
(1762289, 1762289)
 We observeDeltaTc values that approach 2 K with DeltaTc oscillating with d<missing VAR>S over alength scale exceeding 100 xi and, for particular values of d<missing VAR>S, we find thatthe superconducting state reinforces an antiparallel magnetization-alignment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 2, 'K', 0]

Tc
###Nodal superconducting exchange coupling|Angelo Di Bernardo,Sachio Komori,Giorgio Livanas,Giorgio Divitini,Paola Gentile,Mario Cuoco,Jason W. A. Robinson###
(1762301, 1762301)
 We observeDeltaTc values that approach 2 K with DeltaTc oscillating with d<missing VAR>S over alength scale exceeding 100 xi and, for particular values of d<missing VAR>S, we find thatthe superconducting state reinforces an antiparallel magnetization-alignment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 2, 'K', 0]

S
###Nodal superconducting exchange coupling|Angelo Di Bernardo,Sachio Komori,Giorgio Livanas,Giorgio Divitini,Paola Gentile,Mario Cuoco,Jason W. A. Robinson###
(1762308, 1762308)
 We observeDeltaTc values that approach 2 K with DeltaTc oscillating with d<missing VAR>S over alength scale exceeding 100 xi and, for particular values of d<missing VAR>S, we find thatthe superconducting state reinforces an antiparallel magnetization-alignment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 2, 'K', 0]

S
###Nodal superconducting exchange coupling|Angelo Di Bernardo,Sachio Komori,Giorgio Livanas,Giorgio Divitini,Paola Gentile,Mario Cuoco,Jason W. A. Robinson###
(1762337, 1762337)
 We observeDeltaTc values that approach 2 K with DeltaTc oscillating with d<missing VAR>S over alength scale exceeding 100 xi and, for particular values of d<missing VAR>S, we find thatthe superconducting state reinforces an antiparallel magnetization-alignment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 2, 'K', 0]

LaScO3/SrTiO3
###Temperature dependent cloaking of the Quantum Griffiths Singularity in LaScO$_3$/SrTiO$_3$ heterostructures|Simrandeep Kaur,Hemanta Kumar Kundu,Sumit Kumar,Anjana Dogra,Rajesh Narayanan,Thomas Vojta,Aveek Bid###
(1762427, 1762435)
Temperature dependent cloaking of the Quantum Griffiths Singularity in LaScO3/SrTiO3 heterostructures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

LaScO3/SrTiO3
###Temperature dependent cloaking of the Quantum Griffiths Singularity in LaScO$_3$/SrTiO$_3$ heterostructures|Simrandeep Kaur,Hemanta Kumar Kundu,Sumit Kumar,Anjana Dogra,Rajesh Narayanan,Thomas Vojta,Aveek Bid###
(1762486, 1762494)
 We study the superconductor-insulator transition in the quasi-two-dimensionalelectron gas (q<missing VAR>-2DEG) formed at the interface of LaScO3/SrTiO3heterostructures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Ga0.6Fe1.4O3
###Thermal spin current generation in the multifunctional ferrimagnet Ga$_{0.6}$Fe$_{1.4}$O$_{3}$|Alberto Anadón,Elodie Martin,Suvidyakumar Homkar,Benjamin Meunier,Maxime Verges,Heloise Damas,Junior Alegre,Christophe Lefevre,Francois Roulland,Carsten Dubs,Morris Lindner,Ludovic Pasquier,Olivier Copie,Karine Dumesnil,Rafael Ramos,Daniele Preziosi,Sébastien Petit-Watelot,Nathalie Viart,Juan-Carlos Rojas-Sánchez###
(1762882, 1762887)
Thermal spin current generation in the multifunctional ferrimagnet Ga0.6Fe1.4O3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.27999999999999997,0,0,0,0,0.12,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Thermal spin current generation in the multifunctional ferrimagnet Ga$_{0.6}$Fe$_{1.4}$O$_{3}$|Alberto Anadón,Elodie Martin,Suvidyakumar Homkar,Benjamin Meunier,Maxime Verges,Heloise Damas,Junior Alegre,Christophe Lefevre,Francois Roulland,Carsten Dubs,Morris Lindner,Ludovic Pasquier,Olivier Copie,Karine Dumesnil,Rafael Ramos,Daniele Preziosi,Sébastien Petit-Watelot,Nathalie Viart,Juan-Carlos Rojas-Sánchez###
(1762890, 1762890)
 In recent years, multifunctional materials have attracted increasing interestfor magnetic memories and energy harvesting applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Thermal spin current generation in the multifunctional ferrimagnet Ga$_{0.6}$Fe$_{1.4}$O$_{3}$|Alberto Anadón,Elodie Martin,Suvidyakumar Homkar,Benjamin Meunier,Maxime Verges,Heloise Damas,Junior Alegre,Christophe Lefevre,Francois Roulland,Carsten Dubs,Morris Lindner,Ludovic Pasquier,Olivier Copie,Karine Dumesnil,Rafael Ramos,Daniele Preziosi,Sébastien Petit-Watelot,Nathalie Viart,Juan-Carlos Rojas-Sánchez###
(1762981, 1762981)
 In this context,Ga0.6Fe1.4O3 (G<missing VAR>FO) is a good candidate for spintronicsapplications, since it can exhibit multiferroicity and presents a spin Hallmagnetoresistance similar to the one observed in a yttrium iron garnet (YIG)/Ptbilayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga0.6Fe1.4O3
###Thermal spin current generation in the multifunctional ferrimagnet Ga$_{0.6}$Fe$_{1.4}$O$_{3}$|Alberto Anadón,Elodie Martin,Suvidyakumar Homkar,Benjamin Meunier,Maxime Verges,Heloise Damas,Junior Alegre,Christophe Lefevre,Francois Roulland,Carsten Dubs,Morris Lindner,Ludovic Pasquier,Olivier Copie,Karine Dumesnil,Rafael Ramos,Daniele Preziosi,Sébastien Petit-Watelot,Nathalie Viart,Juan-Carlos Rojas-Sánchez###
(1762989, 1762994)
 In this context,Ga0.6Fe1.4O3 (G<missing VAR>FO) is a good candidate for spintronicsapplications, since it can exhibit multiferroicity and presents a spin Hallmagnetoresistance similar to the one observed in a yttrium iron garnet (YIG)/Ptbilayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.27999999999999997,0,0,0,0,0.12,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Thermal spin current generation in the multifunctional ferrimagnet Ga$_{0.6}$Fe$_{1.4}$O$_{3}$|Alberto Anadón,Elodie Martin,Suvidyakumar Homkar,Benjamin Meunier,Maxime Verges,Heloise Damas,Junior Alegre,Christophe Lefevre,Francois Roulland,Carsten Dubs,Morris Lindner,Ludovic Pasquier,Olivier Copie,Karine Dumesnil,Rafael Ramos,Daniele Preziosi,Sébastien Petit-Watelot,Nathalie Viart,Juan-Carlos Rojas-Sánchez###
(1762999, 1762999)
 In this context,Ga0.6Fe1.4O3 (G<missing VAR>FO) is a good candidate for spintronicsapplications, since it can exhibit multiferroicity and presents a spin Hallmagnetoresistance similar to the one observed in a yttrium iron garnet (YIG)/Ptbilayer.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YI
###Thermal spin current generation in the multifunctional ferrimagnet Ga$_{0.6}$Fe$_{1.4}$O$_{3}$|Alberto Anadón,Elodie Martin,Suvidyakumar Homkar,Benjamin Meunier,Maxime Verges,Heloise Damas,Junior Alegre,Christophe Lefevre,Francois Roulland,Carsten Dubs,Morris Lindner,Ludovic Pasquier,Olivier Copie,Karine Dumesnil,Rafael Ramos,Daniele Preziosi,Sébastien Petit-Watelot,Nathalie Viart,Juan-Carlos Rojas-Sánchez###
(1763062, 1763063)
 In this context,Ga0.6Fe1.4O3 (G<missing VAR>FO) is a good candidate for spintronicsapplications, since it can exhibit multiferroicity and presents a spin Hallmagnetoresistance similar to the one observed in a yttrium iron garnet (YIG)/Ptbilayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Thermal spin current generation in the multifunctional ferrimagnet Ga$_{0.6}$Fe$_{1.4}$O$_{3}$|Alberto Anadón,Elodie Martin,Suvidyakumar Homkar,Benjamin Meunier,Maxime Verges,Heloise Damas,Junior Alegre,Christophe Lefevre,Francois Roulland,Carsten Dubs,Morris Lindner,Ludovic Pasquier,Olivier Copie,Karine Dumesnil,Rafael Ramos,Daniele Preziosi,Sébastien Petit-Watelot,Nathalie Viart,Juan-Carlos Rojas-Sánchez###
(1763067, 1763067)
 In this context,Ga0.6Fe1.4O3 (G<missing VAR>FO) is a good candidate for spintronicsapplications, since it can exhibit multiferroicity and presents a spin Hallmagnetoresistance similar to the one observed in a yttrium iron garnet (YIG)/Ptbilayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FO
###Thermal spin current generation in the multifunctional ferrimagnet Ga$_{0.6}$Fe$_{1.4}$O$_{3}$|Alberto Anadón,Elodie Martin,Suvidyakumar Homkar,Benjamin Meunier,Maxime Verges,Heloise Damas,Junior Alegre,Christophe Lefevre,Francois Roulland,Carsten Dubs,Morris Lindner,Ludovic Pasquier,Olivier Copie,Karine Dumesnil,Rafael Ramos,Daniele Preziosi,Sébastien Petit-Watelot,Nathalie Viart,Juan-Carlos Rojas-Sánchez###
(1763081, 1763082)
 Here, we explore G<missing VAR>FO utilizing thermo-spin measurements in an on-chipapproach.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FO/Pt
###Thermal spin current generation in the multifunctional ferrimagnet Ga$_{0.6}$Fe$_{1.4}$O$_{3}$|Alberto Anadón,Elodie Martin,Suvidyakumar Homkar,Benjamin Meunier,Maxime Verges,Heloise Damas,Junior Alegre,Christophe Lefevre,Francois Roulland,Carsten Dubs,Morris Lindner,Ludovic Pasquier,Olivier Copie,Karine Dumesnil,Rafael Ramos,Daniele Preziosi,Sébastien Petit-Watelot,Nathalie Viart,Juan-Carlos Rojas-Sánchez###
(1763159, 1763162)
 By carefully considering the geometry of our thermo-spin devices weare able to quantify the spin Seebeck effect and the spin current generation ina G<missing VAR>FO/Pt bilayer, obtaining a value comparable to that of YIG<missing VAR>/Pt.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

YI
###Thermal spin current generation in the multifunctional ferrimagnet Ga$_{0.6}$Fe$_{1.4}$O$_{3}$|Alberto Anadón,Elodie Martin,Suvidyakumar Homkar,Benjamin Meunier,Maxime Verges,Heloise Damas,Junior Alegre,Christophe Lefevre,Francois Roulland,Carsten Dubs,Morris Lindner,Ludovic Pasquier,Olivier Copie,Karine Dumesnil,Rafael Ramos,Daniele Preziosi,Sébastien Petit-Watelot,Nathalie Viart,Juan-Carlos Rojas-Sánchez###
(1763181, 1763182)
 By carefully considering the geometry of our thermo-spin devices weare able to quantify the spin Seebeck effect and the spin current generation ina G<missing VAR>FO/Pt bilayer, obtaining a value comparable to that of YIG<missing VAR>/Pt.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Thermal spin current generation in the multifunctional ferrimagnet Ga$_{0.6}$Fe$_{1.4}$O$_{3}$|Alberto Anadón,Elodie Martin,Suvidyakumar Homkar,Benjamin Meunier,Maxime Verges,Heloise Damas,Junior Alegre,Christophe Lefevre,Francois Roulland,Carsten Dubs,Morris Lindner,Ludovic Pasquier,Olivier Copie,Karine Dumesnil,Rafael Ramos,Daniele Preziosi,Sébastien Petit-Watelot,Nathalie Viart,Juan-Carlos Rojas-Sánchez###
(1763185, 1763185)
 By carefully considering the geometry of our thermo-spin devices weare able to quantify the spin Seebeck effect and the spin current generation ina G<missing VAR>FO/Pt bilayer, obtaining a value comparable to that of YIG<missing VAR>/Pt.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi2Se3
###Effect of gallium doping on structural and transport properties of the topological insulator Bi2Se3 grown by molecular beam epitaxy|Daniel Brito,Ana Pérez-Rodriguez,Ishwor Khatri,Carlos José Tavares,Mario Amado,Eduardo Castro,Enrique Diez,Sascha Sadewasser,Marcel S Claro###
(1763288, 1763291)
Effect of gallium doping on structural and transport properties of the topological insulator Bi2Se3 grown by molecular beam epitaxy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[225.0, 0.8, ',', 5],[228.0, 2, ',', 5],[231.0, 7, ',', 5],[235.0, 14, 'at', 5],[355.0, 1.5, 'to', 9],[356.0, 300, 'K', 9],[448.0, 2, 'at', 10]

(Bi2Se3)
###Effect of gallium doping on structural and transport properties of the topological insulator Bi2Se3 grown by molecular beam epitaxy|Daniel Brito,Ana Pérez-Rodriguez,Ishwor Khatri,Carlos José Tavares,Mario Amado,Eduardo Castro,Enrique Diez,Sascha Sadewasser,Marcel S Claro###
(1763351, 1763356)
Bismuth selenide (Bi2Se3) is one of the most promising topologicalinsulators.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 0.8, ',', 3],[163.0, 2, ',', 3],[166.0, 7, ',', 3],[170.0, 14, 'at', 3],[290.0, 1.5, 'to', 7],[291.0, 300, 'K', 7],[383.0, 2, 'at', 8]

In
###Effect of gallium doping on structural and transport properties of the topological insulator Bi2Se3 grown by molecular beam epitaxy|Daniel Brito,Ana Pérez-Rodriguez,Ishwor Khatri,Carlos José Tavares,Mario Amado,Eduardo Castro,Enrique Diez,Sascha Sadewasser,Marcel S Claro###
(1763485, 1763485)
 In this work, Bi2Se3 was grown by molecular beam epitaxy anddoped with 0.8, 2, 7, and 14 at.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 0.8, ',', 0],[34.0, 2, ',', 0],[37.0, 7, ',', 0],[41.0, 14, 'at', 0],[161.0, 1.5, 'to', 4],[162.0, 300, 'K', 4],[254.0, 2, 'at', 5]

Bi2Se3
###Effect of gallium doping on structural and transport properties of the topological insulator Bi2Se3 grown by molecular beam epitaxy|Daniel Brito,Ana Pérez-Rodriguez,Ishwor Khatri,Carlos José Tavares,Mario Amado,Eduardo Castro,Enrique Diez,Sascha Sadewasser,Marcel S Claro###
(1763492, 1763495)
 In this work, Bi2Se3 was grown by molecular beam epitaxy anddoped with 0.8, 2, 7, and 14 at.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 0.8, ',', 0],[24.0, 2, ',', 0],[27.0, 7, ',', 0],[31.0, 14, 'at', 0],[151.0, 1.5, 'to', 4],[152.0, 300, 'K', 4],[244.0, 2, 'at', 5]

Ga
###Effect of gallium doping on structural and transport properties of the topological insulator Bi2Se3 grown by molecular beam epitaxy|Daniel Brito,Ana Pérez-Rodriguez,Ishwor Khatri,Carlos José Tavares,Mario Amado,Eduardo Castro,Enrique Diez,Sascha Sadewasser,Marcel S Claro###
(1763533, 1763533)
 % of Ga, with the aim of shifting the chemicalpotential into the bandgap.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 0.8, ',', 1],[14.0, 2, ',', 1],[11.0, 7, ',', 1],[7.0, 14, 'at', 1],[113.0, 1.5, 'to', 3],[114.0, 300, 'K', 3],[206.0, 2, 'at', 4]

Ga
###Effect of gallium doping on structural and transport properties of the topological insulator Bi2Se3 grown by molecular beam epitaxy|Daniel Brito,Ana Pérez-Rodriguez,Ishwor Khatri,Carlos José Tavares,Mario Amado,Eduardo Castro,Enrique Diez,Sascha Sadewasser,Marcel S Claro###
(1763579, 1763579)
 The structural, morphological, and electronicproperties of the Ga doped Bi2Se3 are studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 0.8, ',', 2],[60.0, 2, ',', 2],[57.0, 7, ',', 2],[53.0, 14, 'at', 2],[67.0, 1.5, 'to', 2],[68.0, 300, 'K', 2],[160.0, 2, 'at', 3]

Bi2Se3
###Effect of gallium doping on structural and transport properties of the topological insulator Bi2Se3 grown by molecular beam epitaxy|Daniel Brito,Ana Pérez-Rodriguez,Ishwor Khatri,Carlos José Tavares,Mario Amado,Eduardo Castro,Enrique Diez,Sascha Sadewasser,Marcel S Claro###
(1763583, 1763586)
 The structural, morphological, and electronicproperties of the Ga doped Bi2Se3 are studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 0.8, ',', 2],[64.0, 2, ',', 2],[61.0, 7, ',', 2],[57.0, 14, 'at', 2],[60.0, 1.5, 'to', 2],[61.0, 300, 'K', 2],[153.0, 2, 'at', 3]

Ga
###Effect of gallium doping on structural and transport properties of the topological insulator Bi2Se3 grown by molecular beam epitaxy|Daniel Brito,Ana Pérez-Rodriguez,Ishwor Khatri,Carlos José Tavares,Mario Amado,Eduardo Castro,Enrique Diez,Sascha Sadewasser,Marcel S Claro###
(1763653, 1763653)
 Transport and magnetoresistance measurements in the temperaturerange of 1.5 to 300 K show that Ga-doped Bi2Se3 is n<missing VAR>-type with a bulkcharge carrier concentration of 1019 cm-3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 0.8, ',', 4],[134.0, 2, ',', 4],[131.0, 7, ',', 4],[127.0, 14, 'at', 4],[7.0, 1.5, 'to', 0],[6.0, 300, 'K', 0],[86.0, 2, 'at', 1]

Bi2Se3
###Effect of gallium doping on structural and transport properties of the topological insulator Bi2Se3 grown by molecular beam epitaxy|Daniel Brito,Ana Pérez-Rodriguez,Ishwor Khatri,Carlos José Tavares,Mario Amado,Eduardo Castro,Enrique Diez,Sascha Sadewasser,Marcel S Claro###
(1763657, 1763660)
 Transport and magnetoresistance measurements in the temperaturerange of 1.5 to 300 K show that Ga-doped Bi2Se3 is n<missing VAR>-type with a bulkcharge carrier concentration of 1019 cm-3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 0.8, ',', 4],[138.0, 2, ',', 4],[135.0, 7, ',', 4],[131.0, 14, 'at', 4],[11.0, 1.5, 'to', 0],[10.0, 300, 'K', 0],[79.0, 2, 'at', 1]

W
###Effect of gallium doping on structural and transport properties of the topological insulator Bi2Se3 grown by molecular beam epitaxy|Daniel Brito,Ana Pérez-Rodriguez,Ishwor Khatri,Carlos José Tavares,Mario Amado,Eduardo Castro,Enrique Diez,Sascha Sadewasser,Marcel S Claro###
(1763708, 1763708)
 Remarkably, magnetotransportof the weak antilocalization effect (WAL) measurements confirm the existence ofsurface states up to a doping percentage of 2 at.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[192.0, 0.8, ',', 5],[189.0, 2, ',', 5],[186.0, 7, ',', 5],[182.0, 14, 'at', 5],[62.0, 1.5, 'to', 1],[61.0, 300, 'K', 1],[31.0, 2, 'at', 0]

Ga
###Effect of gallium doping on structural and transport properties of the topological insulator Bi2Se3 grown by molecular beam epitaxy|Daniel Brito,Ana Pérez-Rodriguez,Ishwor Khatri,Carlos José Tavares,Mario Amado,Eduardo Castro,Enrique Diez,Sascha Sadewasser,Marcel S Claro###
(1763746, 1763746)
 % of Ga and coherence lengthvalues between 50-800 nm, which envisages the possibility of topologicalsuperconductivity in this material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[230.0, 0.8, ',', 6],[227.0, 2, ',', 6],[224.0, 7, ',', 6],[220.0, 14, 'at', 6],[100.0, 1.5, 'to', 2],[99.0, 300, 'K', 2],[7.0, 2, 'at', 1]

U
###Unidirectional Magnetoresistance in Antiferromagnet/Heavy-metal bilayers|Soho Shim,M. Mehraeen,Joseph Sklenar,Junseok Oh,Jonathan Gibbons,Hilal Saglam,Axel Hoffmann,Steven S. -L. Zhang,Nadya Mason###
(1763924, 1763924)
 Among numerous electricalprobes to read out such magnetic order, unidirectional magnetoresistance (UMR),where the resistance changes under the reversal of the current direction, canprovide rich insights into the transport properties of spin-orbit coupledsystems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

U
###Unidirectional Magnetoresistance in Antiferromagnet/Heavy-metal bilayers|Soho Shim,M. Mehraeen,Joseph Sklenar,Junseok Oh,Jonathan Gibbons,Hilal Saglam,Axel Hoffmann,Steven S. -L. Zhang,Nadya Mason###
(1763986, 1763986)
 However, UMR has never been observed in antiferromagnets before, giventhe absence of intrinsic spin-dependent scattering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

U
###Unidirectional Magnetoresistance in Antiferromagnet/Heavy-metal bilayers|Soho Shim,M. Mehraeen,Joseph Sklenar,Junseok Oh,Jonathan Gibbons,Hilal Saglam,Axel Hoffmann,Steven S. -L. Zhang,Nadya Mason###
(1764032, 1764032)
 Here, we report a UMR inthe antiferromagnetic phase of a FeRhPt bilayer, which undergoes a signchange and then increases strongly with an increasing external magnetic field,in contrast to UM<missing VAR>Rs in ferromagnetic and nonmagnetic systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeRhPt
###Unidirectional Magnetoresistance in Antiferromagnet/Heavy-metal bilayers|Soho Shim,M. Mehraeen,Joseph Sklenar,Junseok Oh,Jonathan Gibbons,Hilal Saglam,Axel Hoffmann,Steven S. -L. Zhang,Nadya Mason###
(1764049, 1764051)
 Here, we report a UMR inthe antiferromagnetic phase of a FeRhPt bilayer, which undergoes a signchange and then increases strongly with an increasing external magnetic field,in contrast to UM<missing VAR>Rs in ferromagnetic and nonmagnetic systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

U
###Unidirectional Magnetoresistance in Antiferromagnet/Heavy-metal bilayers|Soho Shim,M. Mehraeen,Joseph Sklenar,Junseok Oh,Jonathan Gibbons,Hilal Saglam,Axel Hoffmann,Steven S. -L. Zhang,Nadya Mason###
(1764095, 1764095)
 Here, we report a UMR inthe antiferromagnetic phase of a FeRhPt bilayer, which undergoes a signchange and then increases strongly with an increasing external magnetic field,in contrast to UM<missing VAR>Rs in ferromagnetic and nonmagnetic systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

U
###Unidirectional Magnetoresistance in Antiferromagnet/Heavy-metal bilayers|Soho Shim,M. Mehraeen,Joseph Sklenar,Junseok Oh,Jonathan Gibbons,Hilal Saglam,Axel Hoffmann,Steven S. -L. Zhang,Nadya Mason###
(1764135, 1764135)
 We show thatRashba spin-orbit coupling alone cannot explain the sizable UMR in theantiferromagnetic bilayer and that field-induced spin canting distorts theFermi contours to greatly enhance the UMR by two orders of magnitude.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

U
###Unidirectional Magnetoresistance in Antiferromagnet/Heavy-metal bilayers|Soho Shim,M. Mehraeen,Joseph Sklenar,Junseok Oh,Jonathan Gibbons,Hilal Saglam,Axel Hoffmann,Steven S. -L. Zhang,Nadya Mason###
(1764177, 1764177)
 We show thatRashba spin-orbit coupling alone cannot explain the sizable UMR in theantiferromagnetic bilayer and that field-induced spin canting distorts theFermi contours to greatly enhance the UMR by two orders of magnitude.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Eu
###Topological magnetic phase transition in Eu-based A-type antiferromagnets|Eliot Heinrich,Thore Posske,Benedetta Flebus###
(1764261, 1764261)
Topological magnetic phase transition in Eu-based A-type antiferromagnets.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Topological magnetic phase transition in Eu-based A-type antiferromagnets|Eliot Heinrich,Thore Posske,Benedetta Flebus###
(1764282, 1764282)
 Recently, a colossal magnetoresistance (CMR) was observed in EuCd2P2 --a compound that does not fit the conventional mixed-valence paradigm.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuCd2P2
###Topological magnetic phase transition in Eu-based A-type antiferromagnets|Eliot Heinrich,Thore Posske,Benedetta Flebus###
(1764293, 1764297)
 Recently, a colossal magnetoresistance (CMR) was observed in EuCd2P2 --a compound that does not fit the conventional mixed-valence paradigm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Topological magnetic phase transition in Eu-based A-type antiferromagnets|Eliot Heinrich,Thore Posske,Benedetta Flebus###
(1764369, 1764369)
 Instead,experimental evidence points at a resistance driven by strong magneticfluctuations within the two-dimensional (2d) ferromagnetic (FM) planes of thelayered antiferromagnetic (AFM) structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Topological magnetic phase transition in Eu-based A-type antiferromagnets|Eliot Heinrich,Thore Posske,Benedetta Flebus###
(1764386, 1764386)
 Instead,experimental evidence points at a resistance driven by strong magneticfluctuations within the two-dimensional (2d) ferromagnetic (FM) planes of thelayered antiferromagnetic (AFM) structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Topological magnetic phase transition in Eu-based A-type antiferromagnets|Eliot Heinrich,Thore Posske,Benedetta Flebus###
(1764425, 1764425)
 While the experimental results havenot yet been fully understood, a recent theory relates the CMR to a topologicalvortex-antivortex unbinding, i.e.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BK
###Topological magnetic phase transition in Eu-based A-type antiferromagnets|Eliot Heinrich,Thore Posske,Benedetta Flebus###
(1764456, 1764457)
, Berezinskii-Kosterlitz-Thouless (BKT), phasetransition.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuCd2P2
###Topological magnetic phase transition in Eu-based A-type antiferromagnets|Eliot Heinrich,Thore Posske,Benedetta Flebus###
(1764511, 1764515)
 Motivated by these observations, in this work we explore themagnetic phases hosted by a microscopic classical magnetic model forEuCd2P2, which easily generalizes to other Eu A-type antiferromagneticcompounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Eu
###Topological magnetic phase transition in Eu-based A-type antiferromagnets|Eliot Heinrich,Thore Posske,Benedetta Flebus###
(1764528, 1764528)
 Motivated by these observations, in this work we explore themagnetic phases hosted by a microscopic classical magnetic model forEuCd2P2, which easily generalizes to other Eu A-type antiferromagneticcompounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Topological magnetic phase transition in Eu-based A-type antiferromagnets|Eliot Heinrich,Thore Posske,Benedetta Flebus###
(1764652, 1764652)
 We find that this phase transition displays thesame sensitivity to in-plane magnetization, interlayer coupling, and easy-planeanisotropy that is observed experimentally in the CMR signal, providingqualitative numerical evidence that the effect is related to a magnetic BKT<missing VAR>transition.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BK
###Topological magnetic phase transition in Eu-based A-type antiferromagnets|Eliot Heinrich,Thore Posske,Benedetta Flebus###
(1764684, 1764685)
 We find that this phase transition displays thesame sensitivity to in-plane magnetization, interlayer coupling, and easy-planeanisotropy that is observed experimentally in the CMR signal, providingqualitative numerical evidence that the effect is related to a magnetic BKT<missing VAR>transition.
Featurization terminated normally.
0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(SOI)
###Phase transformation-induced superconducting aluminium-silicon alloy rings|B. C. Johnson,M. Stuiber,D. L. Creedon,A. Berhane,L. H. Willems van Beveren,S. Rubanov,J. H. Cole,V. Mourik,A. R. Hamilton,T. L. Duty,J. C. McCallum###
(1764795, 1764799)
 We investigate the formation of superconductivity innanowires fabricated with silicon-on-insulator (SOI).
Featurization successful!
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Phase transformation-induced superconducting aluminium-silicon alloy rings|B. C. Johnson,M. Stuiber,D. L. Creedon,A. Berhane,L. H. Willems van Beveren,S. Rubanov,J. H. Cole,V. Mourik,A. R. Hamilton,T. L. Duty,J. C. McCallum###
(1764825, 1764825)
 Aluminium from depositedcontact electrodes is found to interdiffuses with the Si nanowire structures toform an Al-Si alloy along the entire length of the predefined nanowire deviceover micron length scales at temperatures well below that of the Al-Sieutectic.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Al
###Phase transformation-induced superconducting aluminium-silicon alloy rings|B. C. Johnson,M. Stuiber,D. L. Creedon,A. Berhane,L. H. Willems van Beveren,S. Rubanov,J. H. Cole,V. Mourik,A. R. Hamilton,T. L. Duty,J. C. McCallum###
(1764838, 1764838)
 Aluminium from depositedcontact electrodes is found to interdiffuses with the Si nanowire structures toform an Al-Si alloy along the entire length of the predefined nanowire deviceover micron length scales at temperatures well below that of the Al-Sieutectic.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Phase transformation-induced superconducting aluminium-silicon alloy rings|B. C. Johnson,M. Stuiber,D. L. Creedon,A. Berhane,L. H. Willems van Beveren,S. Rubanov,J. H. Cole,V. Mourik,A. R. Hamilton,T. L. Duty,J. C. McCallum###
(1764840, 1764840)
 Aluminium from depositedcontact electrodes is found to interdiffuses with the Si nanowire structures toform an Al-Si alloy along the entire length of the predefined nanowire deviceover micron length scales at temperatures well below that of the Al-Sieutectic.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Al
###Phase transformation-induced superconducting aluminium-silicon alloy rings|B. C. Johnson,M. Stuiber,D. L. Creedon,A. Berhane,L. H. Willems van Beveren,S. Rubanov,J. H. Cole,V. Mourik,A. R. Hamilton,T. L. Duty,J. C. McCallum###
(1764885, 1764885)
 Aluminium from depositedcontact electrodes is found to interdiffuses with the Si nanowire structures toform an Al-Si alloy along the entire length of the predefined nanowire deviceover micron length scales at temperatures well below that of the Al-Sieutectic.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Phase transformation-induced superconducting aluminium-silicon alloy rings|B. C. Johnson,M. Stuiber,D. L. Creedon,A. Berhane,L. H. Willems van Beveren,S. Rubanov,J. H. Cole,V. Mourik,A. R. Hamilton,T. L. Duty,J. C. McCallum###
(1764887, 1764887)
 Aluminium from depositedcontact electrodes is found to interdiffuses with the Si nanowire structures toform an Al-Si alloy along the entire length of the predefined nanowire deviceover micron length scales at temperatures well below that of the Al-Sieutectic.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Al
###Phase transformation-induced superconducting aluminium-silicon alloy rings|B. C. Johnson,M. Stuiber,D. L. Creedon,A. Berhane,L. H. Willems van Beveren,S. Rubanov,J. H. Cole,V. Mourik,A. R. Hamilton,T. L. Duty,J. C. McCallum###
(1764918, 1764918)
 The resultant transformed nanowire structures are layered in geometrywith a continuous Al-Si alloy wire sitting on the buried oxide of the SOI and aresidual Si cap sitting on top of the wire.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Phase transformation-induced superconducting aluminium-silicon alloy rings|B. C. Johnson,M. Stuiber,D. L. Creedon,A. Berhane,L. H. Willems van Beveren,S. Rubanov,J. H. Cole,V. Mourik,A. R. Hamilton,T. L. Duty,J. C. McCallum###
(1764920, 1764920)
 The resultant transformed nanowire structures are layered in geometrywith a continuous Al-Si alloy wire sitting on the buried oxide of the SOI and aresidual Si cap sitting on top of the wire.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SOI
###Phase transformation-induced superconducting aluminium-silicon alloy rings|B. C. Johnson,M. Stuiber,D. L. Creedon,A. Berhane,L. H. Willems van Beveren,S. Rubanov,J. H. Cole,V. Mourik,A. R. Hamilton,T. L. Duty,J. C. McCallum###
(1764940, 1764942)
 The resultant transformed nanowire structures are layered in geometrywith a continuous Al-Si alloy wire sitting on the buried oxide of the SOI and aresidual Si cap sitting on top of the wire.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Phase transformation-induced superconducting aluminium-silicon alloy rings|B. C. Johnson,M. Stuiber,D. L. Creedon,A. Berhane,L. H. Willems van Beveren,S. Rubanov,J. H. Cole,V. Mourik,A. R. Hamilton,T. L. Duty,J. C. McCallum###
(1764951, 1764951)
 The resultant transformed nanowire structures are layered in geometrywith a continuous Al-Si alloy wire sitting on the buried oxide of the SOI and aresidual Si cap sitting on top of the wire.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

AlSi
###Phase transformation-induced superconducting aluminium-silicon alloy rings|B. C. Johnson,M. Stuiber,D. L. Creedon,A. Berhane,L. H. Willems van Beveren,S. Rubanov,J. H. Cole,V. Mourik,A. R. Hamilton,T. L. Duty,J. C. McCallum###
(1765040, 1765041)
 The superconducting properties of a mesoscopic AlSiring formed on a SOI platform are investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SOI
###Phase transformation-induced superconducting aluminium-silicon alloy rings|B. C. Johnson,M. Stuiber,D. L. Creedon,A. Berhane,L. H. Willems van Beveren,S. Rubanov,J. H. Cole,V. Mourik,A. R. Hamilton,T. L. Duty,J. C. McCallum###
(1765052, 1765054)
 The superconducting properties of a mesoscopic AlSiring formed on a SOI platform are investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Influence of nonuniform magnetization reorientation on spin-orbit torque measurements|Ryan W. Greening,Xin Fan###
(1765336, 1765336)
 In this paper, weuse numerical models to investigate such an impact in three differenttechniques the magneto-optic-Kerr-effect method, the second-harmonic methodand the spin torque ferromagnetic resonance method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn2RuGa
###First-principles insights into all-optical spin switching in the half-metallic Heusler ferrimagnet Mn$_2$RuGa|G. P. Zhang,Y. H. Bai,M. S. Si,Thomas F. George###
(1765515, 1765518)
First-principles insights into all-optical spin switching in the half-metallic Heusler ferrimagnet Mn2RuGa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###First-principles insights into all-optical spin switching in the half-metallic Heusler ferrimagnet Mn$_2$RuGa|G. P. Zhang,Y. H. Bai,M. S. Si,Thomas F. George###
(1765532, 1765532)
 All-optical spin switching (AOS) represents a new frontier in magneticstorage technology -- spin manipulation without a magnetic field, -- but itsunderlying working principle is not well understood.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OS
###First-principles insights into all-optical spin switching in the half-metallic Heusler ferrimagnet Mn$_2$RuGa|G. P. Zhang,Y. H. Bai,M. S. Si,Thomas F. George###
(1765594, 1765595)
 Many AOS ferrimagnets suchas GdFeCo are amorphous and renders the high-level first-principles studyunfeasible.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GdFeCo
###First-principles insights into all-optical spin switching in the half-metallic Heusler ferrimagnet Mn$_2$RuGa|G. P. Zhang,Y. H. Bai,M. S. Si,Thomas F. George###
(1765604, 1765606)
 Many AOS ferrimagnets suchas GdFeCo are amorphous and renders the high-level first-principles studyunfeasible.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn2RuGa
###First-principles insights into all-optical spin switching in the half-metallic Heusler ferrimagnet Mn$_2$RuGa|G. P. Zhang,Y. H. Bai,M. S. Si,Thomas F. George###
(1765642, 1765645)
 The crystalline half-metallic Heusler Mn2RuGa presents anopportunity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn2RuGa
###First-principles insights into all-optical spin switching in the half-metallic Heusler ferrimagnet Mn$_2$RuGa|G. P. Zhang,Y. H. Bai,M. S. Si,Thomas F. George###
(1765686, 1765689)
 Here we carry out hitherto the comprehensive density functionalinvestigation into the material properties of Mn2RuGa, and introduce twoconcepts - the spin anchor site and the optical active site - as two pillarsfor AOS in ferrimagnets.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

OS
###First-principles insights into all-optical spin switching in the half-metallic Heusler ferrimagnet Mn$_2$RuGa|G. P. Zhang,Y. H. Bai,M. S. Si,Thomas F. George###
(1765733, 1765734)
 Here we carry out hitherto the comprehensive density functionalinvestigation into the material properties of Mn2RuGa, and introduce twoconcepts - the spin anchor site and the optical active site - as two pillarsfor AOS in ferrimagnets.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###First-principles insights into all-optical spin switching in the half-metallic Heusler ferrimagnet Mn$_2$RuGa|G. P. Zhang,Y. H. Bai,M. S. Si,Thomas F. George###
(1765741, 1765741)
 In Mn2RuGa, Mn(4a) serves as the spin anchorsite, whose band structure is below the Fermi level and has a strong spinmoment, while Mn(4c) is the optical active site whose band crosses the Fermilevel.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn2RuGa
###First-principles insights into all-optical spin switching in the half-metallic Heusler ferrimagnet Mn$_2$RuGa|G. P. Zhang,Y. H. Bai,M. S. Si,Thomas F. George###
(1765743, 1765746)
 In Mn2RuGa, Mn(4a) serves as the spin anchorsite, whose band structure is below the Fermi level and has a strong spinmoment, while Mn(4c) is the optical active site whose band crosses the Fermilevel.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ru
###First-principles insights into all-optical spin switching in the half-metallic Heusler ferrimagnet Mn$_2$RuGa|G. P. Zhang,Y. H. Bai,M. S. Si,Thomas F. George###
(1765866, 1765866)
 Our magneto-optical Kerr spectrum and band structure calculation jointlyreveal that the delicate competition between the Ru-4d<missing VAR> and Ga-4p<missing VAR> states isresponsible for the creation of these two sites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###First-principles insights into all-optical spin switching in the half-metallic Heusler ferrimagnet Mn$_2$RuGa|G. P. Zhang,Y. H. Bai,M. S. Si,Thomas F. George###
(1765873, 1765873)
 Our magneto-optical Kerr spectrum and band structure calculation jointlyreveal that the delicate competition between the Ru-4d<missing VAR> and Ga-4p<missing VAR> states isresponsible for the creation of these two sites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn2RuGa
###First-principles insights into all-optical spin switching in the half-metallic Heusler ferrimagnet Mn$_2$RuGa|G. P. Zhang,Y. H. Bai,M. S. Si,Thomas F. George###
(1765927, 1765930)
 These two sites found here notonly present a unified picture for both Mn2RuGa and GdFeCo, but also openthe door for the future applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GdFeCo
###First-principles insights into all-optical spin switching in the half-metallic Heusler ferrimagnet Mn$_2$RuGa|G. P. Zhang,Y. H. Bai,M. S. Si,Thomas F. George###
(1765934, 1765936)
 These two sites found here notonly present a unified picture for both Mn2RuGa and GdFeCo, but also openthe door for the future applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn2Ru
###First-principles insights into all-optical spin switching in the half-metallic Heusler ferrimagnet Mn$_2$RuGa|G. P. Zhang,Y. H. Bai,M. S. Si,Thomas F. George###
(1765969, 1765971)
 Specifically, we propose aMn2Rux<missing VAR>Ga-based magnetic tunnel junction where a single laser pulse cancontrol magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ga
###First-principles insights into all-optical spin switching in the half-metallic Heusler ferrimagnet Mn$_2$RuGa|G. P. Zhang,Y. H. Bai,M. S. Si,Thomas F. George###
(1765973, 1765973)
 Specifically, we propose aMn2Rux<missing VAR>Ga-based magnetic tunnel junction where a single laser pulse cancontrol magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Antiferromagnetic Skyrmion based Energy-Efficient Leaky Integrate and Fire Neuron Device|Namita Bindal,Ravish Kumar Raj,Md Mahadi Rajib,Jayasimha Atulasimha,Brajesh Kumar Kaushik###
(1766061, 1766061)
 The development of energy-efficient neuromorphic hardware using spintronicdevices based on antiferromagnetic (AFM) skyrmion motion on nanotracks hasgained considerable interest.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[313.0, 9.2, '%', 5]

F
###Antiferromagnetic Skyrmion based Energy-Efficient Leaky Integrate and Fire Neuron Device|Namita Bindal,Ravish Kumar Raj,Md Mahadi Rajib,Jayasimha Atulasimha,Brajesh Kumar Kaushik###
(1766127, 1766127)
 Owing to its properties such as robustnessagainst external magnetic fields, negligible stray fields, and zero nettopological charge, AFM<missing VAR> skyrmions follow straight trajectories that preventtheir annihilation at nanoscale racetrack edges.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[247.0, 9.2, '%', 4]

F
###Antiferromagnetic Skyrmion based Energy-Efficient Leaky Integrate and Fire Neuron Device|Namita Bindal,Ravish Kumar Raj,Md Mahadi Rajib,Jayasimha Atulasimha,Brajesh Kumar Kaushik###
(1766163, 1766163)
 This makes the AFM<missing VAR> skyrmions amore favorable candidate over the ferromagnetic (FM) skyrmion for futurespintronic applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[211.0, 9.2, '%', 3]

F
###Antiferromagnetic Skyrmion based Energy-Efficient Leaky Integrate and Fire Neuron Device|Namita Bindal,Ravish Kumar Raj,Md Mahadi Rajib,Jayasimha Atulasimha,Brajesh Kumar Kaushik###
(1766184, 1766184)
 This makes the AFM<missing VAR> skyrmions amore favorable candidate over the ferromagnetic (FM) skyrmion for futurespintronic applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[190.0, 9.2, '%', 3]

F
###Antiferromagnetic Skyrmion based Energy-Efficient Leaky Integrate and Fire Neuron Device|Namita Bindal,Ravish Kumar Raj,Md Mahadi Rajib,Jayasimha Atulasimha,Brajesh Kumar Kaushik###
(1766209, 1766209)
 This work proposes an AFM<missing VAR> skyrmion-based neuron deviceexhibiting the leaky-integrate-fire (L<missing VAR>IF) functionality by exploiting thermalgradient or alternatively perpendicular magnetic anisotropy (PM<missing VAR>A) gradient inthe nanotrack for leaky behavior by moving the skyrmion in the direction tominimize the system energy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 9.2, '%', 2]

F
###Antiferromagnetic Skyrmion based Energy-Efficient Leaky Integrate and Fire Neuron Device|Namita Bindal,Ravish Kumar Raj,Md Mahadi Rajib,Jayasimha Atulasimha,Brajesh Kumar Kaushik###
(1766234, 1766234)
 This work proposes an AFM<missing VAR> skyrmion-based neuron deviceexhibiting the leaky-integrate-fire (L<missing VAR>IF) functionality by exploiting thermalgradient or alternatively perpendicular magnetic anisotropy (PM<missing VAR>A) gradient inthe nanotrack for leaky behavior by moving the skyrmion in the direction tominimize the system energy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 9.2, '%', 2]

P
###Antiferromagnetic Skyrmion based Energy-Efficient Leaky Integrate and Fire Neuron Device|Namita Bindal,Ravish Kumar Raj,Md Mahadi Rajib,Jayasimha Atulasimha,Brajesh Kumar Kaushik###
(1766259, 1766259)
 This work proposes an AFM<missing VAR> skyrmion-based neuron deviceexhibiting the leaky-integrate-fire (L<missing VAR>IF) functionality by exploiting thermalgradient or alternatively perpendicular magnetic anisotropy (PM<missing VAR>A) gradient inthe nanotrack for leaky behavior by moving the skyrmion in the direction tominimize the system energy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 9.2, '%', 2]

F
###Antiferromagnetic Skyrmion based Energy-Efficient Leaky Integrate and Fire Neuron Device|Namita Bindal,Ravish Kumar Raj,Md Mahadi Rajib,Jayasimha Atulasimha,Brajesh Kumar Kaushik###
(1766319, 1766319)
 Furthermore, it is shown that the AFM<missing VAR> skyrmioncouples efficiently to the soft ferromagnetic layer of a magnetic tunneljunction enabling efficient read-out of the skyrmion.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 9.2, '%', 1]

F
###Antiferromagnetic Skyrmion based Energy-Efficient Leaky Integrate and Fire Neuron Device|Namita Bindal,Ravish Kumar Raj,Md Mahadi Rajib,Jayasimha Atulasimha,Brajesh Kumar Kaushik###
(1766400, 1766400)
 The maximum change of9.2% in tunnel magnetoresistance (TMR) is estimated for detecting the AFM<missing VAR>skyrmion.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 9.2, '%', 0]

IF
###Antiferromagnetic Skyrmion based Energy-Efficient Leaky Integrate and Fire Neuron Device|Namita Bindal,Ravish Kumar Raj,Md Mahadi Rajib,Jayasimha Atulasimha,Brajesh Kumar Kaushik###
(1766437, 1766438)
 Moreover, the proposed neuron device has the energy dissipation of4.32 fJ per L<missing VAR>IF operation thus, paving the path for developing energy-efficientdevices in antiferromagnetic spintronics for neuromorphic computing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 9.2, '%', 1]

SO
###Spin-orbit torque switching of magnetic tunnel junctions for memory application|Viola Krizakova,Manu Perumkunnil,Sebastien Couet,Pietro Gambardella,Kevin Garello###
(1766513, 1766514)
 Spin-orbit torques (SOT) provide a versatile tool to manipulate themagnetization of diverse classes of materials and devices using electriccurrents, leading to novel spintronic memory and computing approaches.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin-orbit torque switching of magnetic tunnel junctions for memory application|Viola Krizakova,Manu Perumkunnil,Sebastien Couet,Pietro Gambardella,Kevin Garello###
(1766574, 1766574)
 Inparallel to spin transfer torques (STT), which have emerged as a leadingnon-volatile memory technologie, SOT<missing VAR> broaden the scope of current-inducedmagnetic switching to applications that run close to the clock speed of thecentral processing unit and unconventional computing architectures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin-orbit torque switching of magnetic tunnel junctions for memory application|Viola Krizakova,Manu Perumkunnil,Sebastien Couet,Pietro Gambardella,Kevin Garello###
(1766588, 1766588)
 Inparallel to spin transfer torques (STT), which have emerged as a leadingnon-volatile memory technologie, SOT<missing VAR> broaden the scope of current-inducedmagnetic switching to applications that run close to the clock speed of thecentral processing unit and unconventional computing architectures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Spin-orbit torque switching of magnetic tunnel junctions for memory application|Viola Krizakova,Manu Perumkunnil,Sebastien Couet,Pietro Gambardella,Kevin Garello###
(1766616, 1766617)
 Inparallel to spin transfer torques (STT), which have emerged as a leadingnon-volatile memory technologie, SOT<missing VAR> broaden the scope of current-inducedmagnetic switching to applications that run close to the clock speed of thecentral processing unit and unconventional computing architectures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin-orbit torque switching of magnetic tunnel junctions for memory application|Viola Krizakova,Manu Perumkunnil,Sebastien Couet,Pietro Gambardella,Kevin Garello###
(1766675, 1766675)
 In thispaper, we review the fundamental characteristics of SOT<missing VAR> and their use to switchmagnetic tunnel junction (MTJ) devices, the elementary unit of themagnetoresistive random access memory (MRAM).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Spin-orbit torque switching of magnetic tunnel junctions for memory application|Viola Krizakova,Manu Perumkunnil,Sebastien Couet,Pietro Gambardella,Kevin Garello###
(1766695, 1766696)
 In thispaper, we review the fundamental characteristics of SOT<missing VAR> and their use to switchmagnetic tunnel junction (MTJ) devices, the elementary unit of themagnetoresistive random access memory (MRAM).
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin-orbit torque switching of magnetic tunnel junctions for memory application|Viola Krizakova,Manu Perumkunnil,Sebastien Couet,Pietro Gambardella,Kevin Garello###
(1766752, 1766752)
 In the first part, we illustratethe physical mechanisms that drive the SOT<missing VAR> and magnetization reversal innanoscale structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Spin-orbit torque switching of magnetic tunnel junctions for memory application|Viola Krizakova,Manu Perumkunnil,Sebastien Couet,Pietro Gambardella,Kevin Garello###
(1766778, 1766779)
 In the first part, we illustratethe physical mechanisms that drive the SOT<missing VAR> and magnetization reversal innanoscale structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin-orbit torque switching of magnetic tunnel junctions for memory application|Viola Krizakova,Manu Perumkunnil,Sebastien Couet,Pietro Gambardella,Kevin Garello###
(1766796, 1766796)
 In the second part, we focus on the SOT-MTJ cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Spin-orbit torque switching of magnetic tunnel junctions for memory application|Viola Krizakova,Manu Perumkunnil,Sebastien Couet,Pietro Gambardella,Kevin Garello###
(1766813, 1766814)
 In the second part, we focus on the SOT-MTJ cell.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Spin-orbit torque switching of magnetic tunnel junctions for memory application|Viola Krizakova,Manu Perumkunnil,Sebastien Couet,Pietro Gambardella,Kevin Garello###
(1766869, 1766870)
 Wediscuss the anatomy of the MTJ in terms of materials and stack development,summarize the figures of merit for SOT<missing VAR> switching, review the field-freeoperation of perpendicularly magnetized MTJs, and present options to combineSOT<missing VAR>, STT and voltage-gate assisted switching.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Spin-orbit torque switching of magnetic tunnel junctions for memory application|Viola Krizakova,Manu Perumkunnil,Sebastien Couet,Pietro Gambardella,Kevin Garello###
(1766909, 1766910)
 Wediscuss the anatomy of the MTJ in terms of materials and stack development,summarize the figures of merit for SOT<missing VAR> switching, review the field-freeoperation of perpendicularly magnetized MTJs, and present options to combineSOT<missing VAR>, STT and voltage-gate assisted switching.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spin-orbit torque switching of magnetic tunnel junctions for memory application|Viola Krizakova,Manu Perumkunnil,Sebastien Couet,Pietro Gambardella,Kevin Garello###
(1766914, 1766914)
 Wediscuss the anatomy of the MTJ in terms of materials and stack development,summarize the figures of merit for SOT<missing VAR> switching, review the field-freeoperation of perpendicularly magnetized MTJs, and present options to combineSOT<missing VAR>, STT and voltage-gate assisted switching.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin-orbit torque switching of magnetic tunnel junctions for memory application|Viola Krizakova,Manu Perumkunnil,Sebastien Couet,Pietro Gambardella,Kevin Garello###
(1766929, 1766929)
 In the third part, we considerSOT-MRAMs in the perspective of circuit integration processes, introducingconsiderations on scaling and performance, as well as macro-designarchitectures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Spin-orbit torque switching of magnetic tunnel junctions for memory application|Viola Krizakova,Manu Perumkunnil,Sebastien Couet,Pietro Gambardella,Kevin Garello###
(1766943, 1766944)
 In the third part, we considerSOT-MRAMs in the perspective of circuit integration processes, introducingconsiderations on scaling and performance, as well as macro-designarchitectures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Spin-orbit torque switching of magnetic tunnel junctions for memory application|Viola Krizakova,Manu Perumkunnil,Sebastien Couet,Pietro Gambardella,Kevin Garello###
(1767009, 1767010)
 We thus bridge the fundamental description of SOT<missing VAR>-drivenmagnetization dynamics with an application-oriented perspective, includingdevice and system-level considerations, goals, and challenges.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HoAgGe
###Low-temperature transport properties of intermetallic compound HoAgGe with kagome spin ice state|N. Li,Q. Huang,X. Y. Yue,S. K. Guang,K. Xia,Y. Y. Wang,Q. J. Li,X. Zhao,H. D. Zhou,X. F. Sun###
(1767075, 1767077)
Low-temperature transport properties of intermetallic compound HoAgGe with kagome spin ice state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[200.0, 11.3, 'K', 3],[214.0, 7, 'K', 3]

HoAgGe
###Low-temperature transport properties of intermetallic compound HoAgGe with kagome spin ice state|N. Li,Q. Huang,X. Y. Yue,S. K. Guang,K. Xia,Y. Y. Wang,Q. J. Li,X. Zhao,H. D. Zhou,X. F. Sun###
(1767117, 1767119)
 We study the magnetic susceptibility, magnetization, resistivity and thermalconductivity of intermetallic HoAgGe single crystals at low temperatures and inmagnetic fields along the a and c<missing VAR> axis, while the electric and heatcurrents are along the c<missing VAR> axis.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 11.3, 'K', 2],[172.0, 7, 'K', 2]

B
###Low-temperature transport properties of intermetallic compound HoAgGe with kagome spin ice state|N. Li,Q. Huang,X. Y. Yue,S. K. Guang,K. Xia,Y. Y. Wang,Q. J. Li,X. Zhao,H. D. Zhou,X. F. Sun###
(1767210, 1767210)
 The magnetization curves show a series ofmetamagnetic transitions and small hysteresis at low field for B parallel a,and a weak metamagnetic transition for B parallel c<missing VAR>, respectively.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 11.3, 'K', 1],[81.0, 7, 'K', 1]

B
###Low-temperature transport properties of intermetallic compound HoAgGe with kagome spin ice state|N. Li,Q. Huang,X. Y. Yue,S. K. Guang,K. Xia,Y. Y. Wang,Q. J. Li,X. Zhao,H. D. Zhou,X. F. Sun###
(1767230, 1767230)
 The magnetization curves show a series ofmetamagnetic transitions and small hysteresis at low field for B parallel a,and a weak metamagnetic transition for B parallel c<missing VAR>, respectively.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 11.3, 'K', 1],[61.0, 7, 'K', 1]

N
###Low-temperature transport properties of intermetallic compound HoAgGe with kagome spin ice state|N. Li,Q. Huang,X. Y. Yue,S. K. Guang,K. Xia,Y. Y. Wang,Q. J. Li,X. Zhao,H. D. Zhou,X. F. Sun###
(1767274, 1767274)
 Both themagnetic susceptibility and rho(T) curve show anomalies at theantiferromagnetic transition (T<missing VAR>rmN sim 11.3 K) and spin reorientationtransition (sim 7 K).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 11.3, 'K', 0],[17.0, 7, 'K', 0]

In
###Low-temperature transport properties of intermetallic compound HoAgGe with kagome spin ice state|N. Li,Q. Huang,X. Y. Yue,S. K. Guang,K. Xia,Y. Y. Wang,Q. J. Li,X. Zhao,H. D. Zhou,X. F. Sun###
(1767295, 1767295)
 In zero field and at very low temperatures, theelectrons are found to be the main heat carriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 11.3, 'K', 1],[4.0, 7, 'K', 1]

B
###Low-temperature transport properties of intermetallic compound HoAgGe with kagome spin ice state|N. Li,Q. Huang,X. Y. Yue,S. K. Guang,K. Xia,Y. Y. Wang,Q. J. Li,X. Zhao,H. D. Zhou,X. F. Sun###
(1767336, 1767336)
 For B parallel a, therho(B) curves display large and positive transverse magnetoresistance (MR)with extraordinary field dependence between B2 and B-linear, accompaniedwith anomalies at the metamagnetic transitions and low-field hysteresis;meanwhile, the kappa(B) mainly decrease with increasing field and displaysome anomalies at the metamagnetic transitions.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 11.3, 'K', 2],[45.0, 7, 'K', 2]

(B)
###Low-temperature transport properties of intermetallic compound HoAgGe with kagome spin ice state|N. Li,Q. Huang,X. Y. Yue,S. K. Guang,K. Xia,Y. Y. Wang,Q. J. Li,X. Zhao,H. D. Zhou,X. F. Sun###
(1767347, 1767349)
 For B parallel a, therho(B) curves display large and positive transverse magnetoresistance (MR)with extraordinary field dependence between B2 and B-linear, accompaniedwith anomalies at the metamagnetic transitions and low-field hysteresis;meanwhile, the kappa(B) mainly decrease with increasing field and displaysome anomalies at the metamagnetic transitions.
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 11.3, 'K', 2],[56.0, 7, 'K', 2]

B2
###Low-temperature transport properties of intermetallic compound HoAgGe with kagome spin ice state|N. Li,Q. Huang,X. Y. Yue,S. K. Guang,K. Xia,Y. Y. Wang,Q. J. Li,X. Zhao,H. D. Zhou,X. F. Sun###
(1767381, 1767382)
 For B parallel a, therho(B) curves display large and positive transverse magnetoresistance (MR)with extraordinary field dependence between B2 and B-linear, accompaniedwith anomalies at the metamagnetic transitions and low-field hysteresis;meanwhile, the kappa(B) mainly decrease with increasing field and displaysome anomalies at the metamagnetic transitions.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 11.3, 'K', 2],[90.0, 7, 'K', 2]

B
###Low-temperature transport properties of intermetallic compound HoAgGe with kagome spin ice state|N. Li,Q. Huang,X. Y. Yue,S. K. Guang,K. Xia,Y. Y. Wang,Q. J. Li,X. Zhao,H. D. Zhou,X. F. Sun###
(1767386, 1767386)
 For B parallel a, therho(B) curves display large and positive transverse magnetoresistance (MR)with extraordinary field dependence between B2 and B-linear, accompaniedwith anomalies at the metamagnetic transitions and low-field hysteresis;meanwhile, the kappa(B) mainly decrease with increasing field and displaysome anomalies at the metamagnetic transitions.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 11.3, 'K', 2],[95.0, 7, 'K', 2]

(B)
###Low-temperature transport properties of intermetallic compound HoAgGe with kagome spin ice state|N. Li,Q. Huang,X. Y. Yue,S. K. Guang,K. Xia,Y. Y. Wang,Q. J. Li,X. Zhao,H. D. Zhou,X. F. Sun###
(1767422, 1767424)
 For B parallel a, therho(B) curves display large and positive transverse magnetoresistance (MR)with extraordinary field dependence between B2 and B-linear, accompaniedwith anomalies at the metamagnetic transitions and low-field hysteresis;meanwhile, the kappa(B) mainly decrease with increasing field and displaysome anomalies at the metamagnetic transitions.
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 11.3, 'K', 2],[131.0, 7, 'K', 2]

B
###Low-temperature transport properties of intermetallic compound HoAgGe with kagome spin ice state|N. Li,Q. Huang,X. Y. Yue,S. K. Guang,K. Xia,Y. Y. Wang,Q. J. Li,X. Zhao,H. D. Zhou,X. F. Sun###
(1767456, 1767456)
 For B parallel c<missing VAR>, there isweak and negative longitudinal MR while the kappa(B) show rather strongfield dependence, indicating the role of phonon heat transport.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 11.3, 'K', 3],[165.0, 7, 'K', 3]

(B)
###Low-temperature transport properties of intermetallic compound HoAgGe with kagome spin ice state|N. Li,Q. Huang,X. Y. Yue,S. K. Guang,K. Xia,Y. Y. Wang,Q. J. Li,X. Zhao,H. D. Zhou,X. F. Sun###
(1767484, 1767486)
 For B parallel c<missing VAR>, there isweak and negative longitudinal MR while the kappa(B) show rather strongfield dependence, indicating the role of phonon heat transport.
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[207.0, 11.3, 'K', 3],[193.0, 7, 'K', 3]

Cr3
###Cr$_3$X$_4$ (X=Se, Te) monolayers as new platform to realize robust spin filter, spin diode and spin valve|Qihong Wu,Rongkun Liu,Zhanjun Qiu,Dengfeng Li,Jie Li,Xiaotian Wang,Guangqian Ding###
(1767523, 1767524)
Cr3X<missing VAR>4 (X<missing VAR>Se, Te) monolayers as new platform to realize robust spin filter, spin diode and spin valve.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Se
###Cr$_3$X$_4$ (X=Se, Te) monolayers as new platform to realize robust spin filter, spin diode and spin valve|Qihong Wu,Rongkun Liu,Zhanjun Qiu,Dengfeng Li,Jie Li,Xiaotian Wang,Guangqian Ding###
(1767530, 1767530)
Cr3X<missing VAR>4 (X<missing VAR>Se, Te) monolayers as new platform to realize robust spin filter, spin diode and spin valve.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Te
###Cr$_3$X$_4$ (X=Se, Te) monolayers as new platform to realize robust spin filter, spin diode and spin valve|Qihong Wu,Rongkun Liu,Zhanjun Qiu,Dengfeng Li,Jie Li,Xiaotian Wang,Guangqian Ding###
(1767533, 1767533)
Cr3X<missing VAR>4 (X<missing VAR>Se, Te) monolayers as new platform to realize robust spin filter, spin diode and spin valve.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Cr$_3$X$_4$ (X=Se, Te) monolayers as new platform to realize robust spin filter, spin diode and spin valve|Qihong Wu,Rongkun Liu,Zhanjun Qiu,Dengfeng Li,Jie Li,Xiaotian Wang,Guangqian Ding###
(1767573, 1767573)
 Two-dimensional ferromagnetic (FM) half-metals are promising candidates foradvanced spintronic devices with small-size and high-capacity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Cr$_3$X$_4$ (X=Se, Te) monolayers as new platform to realize robust spin filter, spin diode and spin valve|Qihong Wu,Rongkun Liu,Zhanjun Qiu,Dengfeng Li,Jie Li,Xiaotian Wang,Guangqian Ding###
(1767626, 1767626)
 Motivated byrecent report on controlling synthesis of FM<missing VAR> Cr3Te4 nanosheet, herein, toexplore the potential application in spintronics, we designed spintronicdevices based on Cr3X<missing VAR>4 (X<missing VAR>Se, Te) monolayers and investigated their spintransport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr3Te4
###Cr$_3$X$_4$ (X=Se, Te) monolayers as new platform to realize robust spin filter, spin diode and spin valve|Qihong Wu,Rongkun Liu,Zhanjun Qiu,Dengfeng Li,Jie Li,Xiaotian Wang,Guangqian Ding###
(1767629, 1767632)
 Motivated byrecent report on controlling synthesis of FM<missing VAR> Cr3Te4 nanosheet, herein, toexplore the potential application in spintronics, we designed spintronicdevices based on Cr3X<missing VAR>4 (X<missing VAR>Se, Te) monolayers and investigated their spintransport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr3
###Cr$_3$X$_4$ (X=Se, Te) monolayers as new platform to realize robust spin filter, spin diode and spin valve|Qihong Wu,Rongkun Liu,Zhanjun Qiu,Dengfeng Li,Jie Li,Xiaotian Wang,Guangqian Ding###
(1767669, 1767670)
 Motivated byrecent report on controlling synthesis of FM<missing VAR> Cr3Te4 nanosheet, herein, toexplore the potential application in spintronics, we designed spintronicdevices based on Cr3X<missing VAR>4 (X<missing VAR>Se, Te) monolayers and investigated their spintransport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Se
###Cr$_3$X$_4$ (X=Se, Te) monolayers as new platform to realize robust spin filter, spin diode and spin valve|Qihong Wu,Rongkun Liu,Zhanjun Qiu,Dengfeng Li,Jie Li,Xiaotian Wang,Guangqian Ding###
(1767676, 1767676)
 Motivated byrecent report on controlling synthesis of FM<missing VAR> Cr3Te4 nanosheet, herein, toexplore the potential application in spintronics, we designed spintronicdevices based on Cr3X<missing VAR>4 (X<missing VAR>Se, Te) monolayers and investigated their spintransport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Te
###Cr$_3$X$_4$ (X=Se, Te) monolayers as new platform to realize robust spin filter, spin diode and spin valve|Qihong Wu,Rongkun Liu,Zhanjun Qiu,Dengfeng Li,Jie Li,Xiaotian Wang,Guangqian Ding###
(1767679, 1767679)
 Motivated byrecent report on controlling synthesis of FM<missing VAR> Cr3Te4 nanosheet, herein, toexplore the potential application in spintronics, we designed spintronicdevices based on Cr3X<missing VAR>4 (X<missing VAR>Se, Te) monolayers and investigated their spintransport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr3Te4
###Cr$_3$X$_4$ (X=Se, Te) monolayers as new platform to realize robust spin filter, spin diode and spin valve|Qihong Wu,Rongkun Liu,Zhanjun Qiu,Dengfeng Li,Jie Li,Xiaotian Wang,Guangqian Ding###
(1767704, 1767707)
 We found that Cr3Te4 monolayer based device showsspin filtering and dual spin diode effect when applying bias voltage, whileCr3S4 monolayer is an excellent platform to realize a spin valve.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr3S4
###Cr$_3$X$_4$ (X=Se, Te) monolayers as new platform to realize robust spin filter, spin diode and spin valve|Qihong Wu,Rongkun Liu,Zhanjun Qiu,Dengfeng Li,Jie Li,Xiaotian Wang,Guangqian Ding###
(1767744, 1767747)
 We found that Cr3Te4 monolayer based device showsspin filtering and dual spin diode effect when applying bias voltage, whileCr3S4 monolayer is an excellent platform to realize a spin valve.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr3Te4
###Cr$_3$X$_4$ (X=Se, Te) monolayers as new platform to realize robust spin filter, spin diode and spin valve|Qihong Wu,Rongkun Liu,Zhanjun Qiu,Dengfeng Li,Jie Li,Xiaotian Wang,Guangqian Ding###
(1767819, 1767822)
 Thedifferent transport properties are primarily ascribed to the semiconductingspin channel, which is close to and away from the Fermi level in Cr3Te4and Cr3Se4 monolayers, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr3Se4
###Cr$_3$X$_4$ (X=Se, Te) monolayers as new platform to realize robust spin filter, spin diode and spin valve|Qihong Wu,Rongkun Liu,Zhanjun Qiu,Dengfeng Li,Jie Li,Xiaotian Wang,Guangqian Ding###
(1767827, 1767830)
 Thedifferent transport properties are primarily ascribed to the semiconductingspin channel, which is close to and away from the Fermi level in Cr3Te4and Cr3Se4 monolayers, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr3Se4
###Cr$_3$X$_4$ (X=Se, Te) monolayers as new platform to realize robust spin filter, spin diode and spin valve|Qihong Wu,Rongkun Liu,Zhanjun Qiu,Dengfeng Li,Jie Li,Xiaotian Wang,Guangqian Ding###
(1767850, 1767853)
 Interestingly, the current inmonolayer Cr3Se4 based device also displays a negative differentialresistance effect (NDRE) and a high magnetoresistance ratio (up to 2103).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Cr$_3$X$_4$ (X=Se, Te) monolayers as new platform to realize robust spin filter, spin diode and spin valve|Qihong Wu,Rongkun Liu,Zhanjun Qiu,Dengfeng Li,Jie Li,Xiaotian Wang,Guangqian Ding###
(1767875, 1767875)
 Interestingly, the current inmonolayer Cr3Se4 based device also displays a negative differentialresistance effect (NDRE) and a high magnetoresistance ratio (up to 2103).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Cr$_3$X$_4$ (X=Se, Te) monolayers as new platform to realize robust spin filter, spin diode and spin valve|Qihong Wu,Rongkun Liu,Zhanjun Qiu,Dengfeng Li,Jie Li,Xiaotian Wang,Guangqian Ding###
(1767922, 1767922)
Moreover, we found thermally induced spin filtering effect and NDRE inCr3Se4 junction when applying temperature gradient instead of biasvoltage.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr3Se4
###Cr$_3$X$_4$ (X=Se, Te) monolayers as new platform to realize robust spin filter, spin diode and spin valve|Qihong Wu,Rongkun Liu,Zhanjun Qiu,Dengfeng Li,Jie Li,Xiaotian Wang,Guangqian Ding###
(1767930, 1767933)
Moreover, we found thermally induced spin filtering effect and NDRE inCr3Se4 junction when applying temperature gradient instead of biasvoltage.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr3
###Cr$_3$X$_4$ (X=Se, Te) monolayers as new platform to realize robust spin filter, spin diode and spin valve|Qihong Wu,Rongkun Liu,Zhanjun Qiu,Dengfeng Li,Jie Li,Xiaotian Wang,Guangqian Ding###
(1767969, 1767970)
 These theoretical findings highlight the potential of Cr3X<missing VAR>4(X<missing VAR>Se, Te) monolayers in spintronic applications and put forward realisticmaterials to realize nanosale spintronic device.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Se
###Cr$_3$X$_4$ (X=Se, Te) monolayers as new platform to realize robust spin filter, spin diode and spin valve|Qihong Wu,Rongkun Liu,Zhanjun Qiu,Dengfeng Li,Jie Li,Xiaotian Wang,Guangqian Ding###
(1767977, 1767977)
 These theoretical findings highlight the potential of Cr3X<missing VAR>4(X<missing VAR>Se, Te) monolayers in spintronic applications and put forward realisticmaterials to realize nanosale spintronic device.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Te
###Cr$_3$X$_4$ (X=Se, Te) monolayers as new platform to realize robust spin filter, spin diode and spin valve|Qihong Wu,Rongkun Liu,Zhanjun Qiu,Dengfeng Li,Jie Li,Xiaotian Wang,Guangqian Ding###
(1767980, 1767980)
 These theoretical findings highlight the potential of Cr3X<missing VAR>4(X<missing VAR>Se, Te) monolayers in spintronic applications and put forward realisticmaterials to realize nanosale spintronic device.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pb0.24Sn0.76Te
###Magnetotransport in graphene/Pb0.24Sn0.76Te heterostructures: finding a way to avoid catastrophe|Gregory M. Stephen,Ivan Naumov,Nicholas A. Blumenschein,Yi-Jan Leo Sun,Jennifer E. DeMell,Sharmila Shirodkar,Pratibha Dev,Patrick J. Taylor,Jeremy T. Robinson,Paul M. Campbell,Aubrey T. Hanbicki,Adam L. Friedman###
(1768027, 1768031)
Magnetotransport in graphene/Pb0.24Sn0.76Te heterostructures finding a way to avoid catastrophe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.38,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.12,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[261.0, 20, ',', 5],[278.0, 100, 'percent', 5],[339.0, 4.5, 'ps', 6]

Pb0.24Sn0.76Te
###Magnetotransport in graphene/Pb0.24Sn0.76Te heterostructures: finding a way to avoid catastrophe|Gregory M. Stephen,Ivan Naumov,Nicholas A. Blumenschein,Yi-Jan Leo Sun,Jennifer E. DeMell,Sharmila Shirodkar,Pratibha Dev,Patrick J. Taylor,Jeremy T. Robinson,Paul M. Campbell,Aubrey T. Hanbicki,Adam L. Friedman###
(1768161, 1768165)
 Individually, both grapheneand Pb0.24Sn0.76Te (PST) are widely investigated for spintronic applicationsbecause graphenes<missing VAR> high carrier mobility and PSTs topologically protectedsurface states are attractive platforms for spin transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.38,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.12,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 20, ',', 2],[144.0, 100, 'percent', 2],[205.0, 4.5, 'ps', 3]

PS
###Magnetotransport in graphene/Pb0.24Sn0.76Te heterostructures: finding a way to avoid catastrophe|Gregory M. Stephen,Ivan Naumov,Nicholas A. Blumenschein,Yi-Jan Leo Sun,Jennifer E. DeMell,Sharmila Shirodkar,Pratibha Dev,Patrick J. Taylor,Jeremy T. Robinson,Paul M. Campbell,Aubrey T. Hanbicki,Adam L. Friedman###
(1768168, 1768169)
 Individually, both grapheneand Pb0.24Sn0.76Te (PST) are widely investigated for spintronic applicationsbecause graphenes<missing VAR> high carrier mobility and PSTs topologically protectedsurface states are attractive platforms for spin transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 20, ',', 2],[140.0, 100, 'percent', 2],[201.0, 4.5, 'ps', 3]

PS
###Magnetotransport in graphene/Pb0.24Sn0.76Te heterostructures: finding a way to avoid catastrophe|Gregory M. Stephen,Ivan Naumov,Nicholas A. Blumenschein,Yi-Jan Leo Sun,Jennifer E. DeMell,Sharmila Shirodkar,Pratibha Dev,Patrick J. Taylor,Jeremy T. Robinson,Paul M. Campbell,Aubrey T. Hanbicki,Adam L. Friedman###
(1768199, 1768200)
 Individually, both grapheneand Pb0.24Sn0.76Te (PST) are widely investigated for spintronic applicationsbecause graphenes<missing VAR> high carrier mobility and PSTs topologically protectedsurface states are attractive platforms for spin transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 20, ',', 2],[109.0, 100, 'percent', 2],[170.0, 4.5, 'ps', 3]

PS
###Magnetotransport in graphene/Pb0.24Sn0.76Te heterostructures: finding a way to avoid catastrophe|Gregory M. Stephen,Ivan Naumov,Nicholas A. Blumenschein,Yi-Jan Leo Sun,Jennifer E. DeMell,Sharmila Shirodkar,Pratibha Dev,Patrick J. Taylor,Jeremy T. Robinson,Paul M. Campbell,Aubrey T. Hanbicki,Adam L. Friedman###
(1768240, 1768241)
 Here, we combinemonolayer graphene with PST<missing VAR> and demonstrate a hybrid system with propertiesenhanced relative to the constituent parts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 20, ',', 1],[68.0, 100, 'percent', 1],[129.0, 4.5, 'ps', 2]

Cu
###Weak antilocalization effect and triply degenerate state in Cu-doped CaAuAs|Sudip Malick,Arup Ghosh,Chanchal K. Barman,Aftab Alam,Z. Hossain,Prabhat Mandal,J. Nayak###
(1768517, 1768517)
Weak antilocalization effect and triply degenerate state in Cu-doped CaAuAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 50, '%', 1]

CaAuAs
###Weak antilocalization effect and triply degenerate state in Cu-doped CaAuAs|Sudip Malick,Arup Ghosh,Chanchal K. Barman,Aftab Alam,Z. Hossain,Prabhat Mandal,J. Nayak###
(1768521, 1768523)
Weak antilocalization effect and triply degenerate state in Cu-doped CaAuAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 50, '%', 1]

Cu
###Weak antilocalization effect and triply degenerate state in Cu-doped CaAuAs|Sudip Malick,Arup Ghosh,Chanchal K. Barman,Aftab Alam,Z. Hossain,Prabhat Mandal,J. Nayak###
(1768535, 1768535)
 The effect of 50% Cu doping at the Au site in the topological Diracsemimetal CaAuAs is investigated through electronic band structurecalculations, electrical resistivity, and magnetotransport measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 50, '%', 0]

Au
###Weak antilocalization effect and triply degenerate state in Cu-doped CaAuAs|Sudip Malick,Arup Ghosh,Chanchal K. Barman,Aftab Alam,Z. Hossain,Prabhat Mandal,J. Nayak###
(1768543, 1768543)
 The effect of 50% Cu doping at the Au site in the topological Diracsemimetal CaAuAs is investigated through electronic band structurecalculations, electrical resistivity, and magnetotransport measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 50, '%', 0]

CaAuAs
###Weak antilocalization effect and triply degenerate state in Cu-doped CaAuAs|Sudip Malick,Arup Ghosh,Chanchal K. Barman,Aftab Alam,Z. Hossain,Prabhat Mandal,J. Nayak###
(1768558, 1768560)
 The effect of 50% Cu doping at the Au site in the topological Diracsemimetal CaAuAs is investigated through electronic band structurecalculations, electrical resistivity, and magnetotransport measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 50, '%', 0]

CaAuAs
###Weak antilocalization effect and triply degenerate state in Cu-doped CaAuAs|Sudip Malick,Arup Ghosh,Chanchal K. Barman,Aftab Alam,Z. Hossain,Prabhat Mandal,J. Nayak###
(1768630, 1768632)
Electronic structure calculations a suggest broken-symmetry-driven topologicalphase transition from the Dirac to triple-point state in CaAuAs via alloyengineering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 50, '%', 1]

CaAuAs
###Weak antilocalization effect and triply degenerate state in Cu-doped CaAuAs|Sudip Malick,Arup Ghosh,Chanchal K. Barman,Aftab Alam,Z. Hossain,Prabhat Mandal,J. Nayak###
(1768654, 1768656)
 The electrical resistivity of both the CaAuAs andCaAu0.5Cu0.5As compounds shows metallic behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 50, '%', 2]

CaAu0.5Cu0.5As
###Weak antilocalization effect and triply degenerate state in Cu-doped CaAuAs|Sudip Malick,Arup Ghosh,Chanchal K. Barman,Aftab Alam,Z. Hossain,Prabhat Mandal,J. Nayak###
(1768661, 1768666)
 The electrical resistivity of both the CaAuAs andCaAu0.5Cu0.5As compounds shows metallic behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 50, '%', 2]

CaAuAs
###Weak antilocalization effect and triply degenerate state in Cu-doped CaAuAs|Sudip Malick,Arup Ghosh,Chanchal K. Barman,Aftab Alam,Z. Hossain,Prabhat Mandal,J. Nayak###
(1768697, 1768699)
 Nonsaturatingquasilinear magnetoresistance (MR) behavior is observed in CaAuAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 50, '%', 3]

CaAu0.5Cu0.5As
###Weak antilocalization effect and triply degenerate state in Cu-doped CaAuAs|Sudip Malick,Arup Ghosh,Chanchal K. Barman,Aftab Alam,Z. Hossain,Prabhat Mandal,J. Nayak###
(1768756, 1768761)
 Such behavior of MR in CaAu0.5Cu0.5As is attributedto the weak antilocalization (WAL) effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[224.0, 50, '%', 5]

W
###Weak antilocalization effect and triply degenerate state in Cu-doped CaAuAs|Sudip Malick,Arup Ghosh,Chanchal K. Barman,Aftab Alam,Z. Hossain,Prabhat Mandal,J. Nayak###
(1768777, 1768777)
 Such behavior of MR in CaAu0.5Cu0.5As is attributedto the weak antilocalization (WAL) effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[245.0, 50, '%', 5]

W
###Weak antilocalization effect and triply degenerate state in Cu-doped CaAuAs|Sudip Malick,Arup Ghosh,Chanchal K. Barman,Aftab Alam,Z. Hossain,Prabhat Mandal,J. Nayak###
(1768787, 1768787)
 The WAL<missing VAR> effect is analyzed usingdifferent theoretical models, including the semiclassical simsqrtB onewhich accounts for the three-dimensional WAL<missing VAR> and modified Hikami-Larkin-Nagaokamodel.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[255.0, 50, '%', 6]

B
###Weak antilocalization effect and triply degenerate state in Cu-doped CaAuAs|Sudip Malick,Arup Ghosh,Chanchal K. Barman,Aftab Alam,Z. Hossain,Prabhat Mandal,J. Nayak###
(1768815, 1768815)
 The WAL<missing VAR> effect is analyzed usingdifferent theoretical models, including the semiclassical simsqrtB onewhich accounts for the three-dimensional WAL<missing VAR> and modified Hikami-Larkin-Nagaokamodel.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[283.0, 50, '%', 6]

W
###Weak antilocalization effect and triply degenerate state in Cu-doped CaAuAs|Sudip Malick,Arup Ghosh,Chanchal K. Barman,Aftab Alam,Z. Hossain,Prabhat Mandal,J. Nayak###
(1768832, 1768832)
 The WAL<missing VAR> effect is analyzed usingdifferent theoretical models, including the semiclassical simsqrtB onewhich accounts for the three-dimensional WAL<missing VAR> and modified Hikami-Larkin-Nagaokamodel.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[300.0, 50, '%', 6]

W
###Weak antilocalization effect and triply degenerate state in Cu-doped CaAuAs|Sudip Malick,Arup Ghosh,Chanchal K. Barman,Aftab Alam,Z. Hossain,Prabhat Mandal,J. Nayak###
(1768852, 1768852)
 Strong WAL<missing VAR> effect is also observed in the longitudinal MR, which is welldescribed by the generalized Altshuler-Aronov model.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[320.0, 50, '%', 7]

W
###Weak antilocalization effect and triply degenerate state in Cu-doped CaAuAs|Sudip Malick,Arup Ghosh,Chanchal K. Barman,Aftab Alam,Z. Hossain,Prabhat Mandal,J. Nayak###
(1768907, 1768907)
 Our study suggests thatthe WAL<missing VAR> effect originates from weak disorder and the spin-orbit coupled bulkstate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[375.0, 50, '%', 8]

V
###Weak antilocalization effect and triply degenerate state in Cu-doped CaAuAs|Sudip Malick,Arup Ghosh,Chanchal K. Barman,Aftab Alam,Z. Hossain,Prabhat Mandal,J. Nayak###
(1769055, 1769055)
The Hall resistivity measurements indicate that the charge conduction mechanismin these compounds is dominated by the holes with a concentrationsim1020 cm-3 and mobility sim 102 cm2 V-1 S-1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[523.0, 50, '%', 10]

S
###Weak antilocalization effect and triply degenerate state in Cu-doped CaAuAs|Sudip Malick,Arup Ghosh,Chanchal K. Barman,Aftab Alam,Z. Hossain,Prabhat Mandal,J. Nayak###
(1769059, 1769059)
The Hall resistivity measurements indicate that the charge conduction mechanismin these compounds is dominated by the holes with a concentrationsim1020 cm-3 and mobility sim 102 cm2 V-1 S-1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[527.0, 50, '%', 10]

CrCl3
###Physical Vapor Transport Growth of Antiferromagnetic CrCl$_3$ Flakes Down to Monolayer Thickness|Jia Wang,Zahra Ahmadi,David Lujan,Jeongheon Choe,Takashi Taniguchi,Kenji Watanabe,Xiaoqin Li,Jeffrey E. Shield,Xia Hong###
(1769084, 1769086)
Physical Vapor Transport Growth of Antiferromagnetic CrCl3 Flakes Down to Monolayer Thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[409.0, 17, 'K', 8],[434.0, 2, 'D', 9]

Cr
###Physical Vapor Transport Growth of Antiferromagnetic CrCl$_3$ Flakes Down to Monolayer Thickness|Jia Wang,Zahra Ahmadi,David Lujan,Jeongheon Choe,Takashi Taniguchi,Kenji Watanabe,Xiaoqin Li,Jeffrey E. Shield,Xia Hong###
(1769109, 1769109)
 The van der Waals magnets CrX<missing VAR>3 (X<missing VAR>  I, Br, and Cl) exhibit highly tunablemagnetic properties and are promising candidates for developing noveltwo-dimensional (2D) magnetic devices such as magnetic tunnel junctions andspin tunneling transistors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[386.0, 17, 'K', 7],[411.0, 2, 'D', 8]

I
###Physical Vapor Transport Growth of Antiferromagnetic CrCl$_3$ Flakes Down to Monolayer Thickness|Jia Wang,Zahra Ahmadi,David Lujan,Jeongheon Choe,Takashi Taniguchi,Kenji Watanabe,Xiaoqin Li,Jeffrey E. Shield,Xia Hong###
(1769117, 1769117)
 The van der Waals magnets CrX<missing VAR>3 (X<missing VAR>  I, Br, and Cl) exhibit highly tunablemagnetic properties and are promising candidates for developing noveltwo-dimensional (2D) magnetic devices such as magnetic tunnel junctions andspin tunneling transistors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[378.0, 17, 'K', 7],[403.0, 2, 'D', 8]

Br
###Physical Vapor Transport Growth of Antiferromagnetic CrCl$_3$ Flakes Down to Monolayer Thickness|Jia Wang,Zahra Ahmadi,David Lujan,Jeongheon Choe,Takashi Taniguchi,Kenji Watanabe,Xiaoqin Li,Jeffrey E. Shield,Xia Hong###
(1769120, 1769120)
 The van der Waals magnets CrX<missing VAR>3 (X<missing VAR>  I, Br, and Cl) exhibit highly tunablemagnetic properties and are promising candidates for developing noveltwo-dimensional (2D) magnetic devices such as magnetic tunnel junctions andspin tunneling transistors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[375.0, 17, 'K', 7],[400.0, 2, 'D', 8]

Cl
###Physical Vapor Transport Growth of Antiferromagnetic CrCl$_3$ Flakes Down to Monolayer Thickness|Jia Wang,Zahra Ahmadi,David Lujan,Jeongheon Choe,Takashi Taniguchi,Kenji Watanabe,Xiaoqin Li,Jeffrey E. Shield,Xia Hong###
(1769125, 1769125)
 The van der Waals magnets CrX<missing VAR>3 (X<missing VAR>  I, Br, and Cl) exhibit highly tunablemagnetic properties and are promising candidates for developing noveltwo-dimensional (2D) magnetic devices such as magnetic tunnel junctions andspin tunneling transistors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[370.0, 17, 'K', 7],[395.0, 2, 'D', 8]

CrCl3
###Physical Vapor Transport Growth of Antiferromagnetic CrCl$_3$ Flakes Down to Monolayer Thickness|Jia Wang,Zahra Ahmadi,David Lujan,Jeongheon Choe,Takashi Taniguchi,Kenji Watanabe,Xiaoqin Li,Jeffrey E. Shield,Xia Hong###
(1769193, 1769195)
 Previous studies of CrCl3 have mainly focused onmechanically exfoliated samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[300.0, 17, 'K', 6],[325.0, 2, 'D', 7]

CrCl3
###Physical Vapor Transport Growth of Antiferromagnetic CrCl$_3$ Flakes Down to Monolayer Thickness|Jia Wang,Zahra Ahmadi,David Lujan,Jeongheon Choe,Takashi Taniguchi,Kenji Watanabe,Xiaoqin Li,Jeffrey E. Shield,Xia Hong###
(1769273, 1769275)
 Here, we report the growth of large CrCl3flakes with well-defined facets down to monolayer thickness (0.6 nm) via thephysical vapor transport technique.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[220.0, 17, 'K', 4],[245.0, 2, 'D', 5]

CrCl3
###Physical Vapor Transport Growth of Antiferromagnetic CrCl$_3$ Flakes Down to Monolayer Thickness|Jia Wang,Zahra Ahmadi,David Lujan,Jeongheon Choe,Takashi Taniguchi,Kenji Watanabe,Xiaoqin Li,Jeffrey E. Shield,Xia Hong###
(1769381, 1769383)
 High-resolution transmission electron microscopy studiesshow that the CrCl3 flakes are single crystalline in the monoclinicstructure, consistent with the Raman results.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 17, 'K', 2],[137.0, 2, 'D', 3]

CrCl3
###Physical Vapor Transport Growth of Antiferromagnetic CrCl$_3$ Flakes Down to Monolayer Thickness|Jia Wang,Zahra Ahmadi,David Lujan,Jeongheon Choe,Takashi Taniguchi,Kenji Watanabe,Xiaoqin Li,Jeffrey E. Shield,Xia Hong###
(1769427, 1769429)
 The room temperature stability ofthe CrCl3 flakes decreases with decreasing thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 17, 'K', 1],[91.0, 2, 'D', 2]

CrCl3
###Physical Vapor Transport Growth of Antiferromagnetic CrCl$_3$ Flakes Down to Monolayer Thickness|Jia Wang,Zahra Ahmadi,David Lujan,Jeongheon Choe,Takashi Taniguchi,Kenji Watanabe,Xiaoqin Li,Jeffrey E. Shield,Xia Hong###
(1769453, 1769455)
 The tunnelingmagnetoresistance of graphite/CrCl3/graphite tunnel junctions confirms thatfew-layer CrCl3 possesses in-plane magnetic anisotropy and Neeltemperature of 17 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 17, 'K', 0],[65.0, 2, 'D', 1]

CrCl3
###Physical Vapor Transport Growth of Antiferromagnetic CrCl$_3$ Flakes Down to Monolayer Thickness|Jia Wang,Zahra Ahmadi,David Lujan,Jeongheon Choe,Takashi Taniguchi,Kenji Watanabe,Xiaoqin Li,Jeffrey E. Shield,Xia Hong###
(1769472, 1769474)
 The tunnelingmagnetoresistance of graphite/CrCl3/graphite tunnel junctions confirms thatfew-layer CrCl3 possesses in-plane magnetic anisotropy and Neeltemperature of 17 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 17, 'K', 0],[46.0, 2, 'D', 1]

N
###Physical Vapor Transport Growth of Antiferromagnetic CrCl$_3$ Flakes Down to Monolayer Thickness|Jia Wang,Zahra Ahmadi,David Lujan,Jeongheon Choe,Takashi Taniguchi,Kenji Watanabe,Xiaoqin Li,Jeffrey E. Shield,Xia Hong###
(1769488, 1769488)
 The tunnelingmagnetoresistance of graphite/CrCl3/graphite tunnel junctions confirms thatfew-layer CrCl3 possesses in-plane magnetic anisotropy and Neeltemperature of 17 K.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 17, 'K', 0],[32.0, 2, 'D', 1]

CrCl3
###Physical Vapor Transport Growth of Antiferromagnetic CrCl$_3$ Flakes Down to Monolayer Thickness|Jia Wang,Zahra Ahmadi,David Lujan,Jeongheon Choe,Takashi Taniguchi,Kenji Watanabe,Xiaoqin Li,Jeffrey E. Shield,Xia Hong###
(1769512, 1769514)
 Our study paves the path for developing CrCl3-basedscalable 2D spintronic applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 17, 'K', 1],[6.0, 2, 'D', 0]

WTe2
###All-electric spin device operation using the Weyl semimetal, WTe$_2$, at room temperature|Kosuke Ohnishi,Motomi Aoki,Ryo Ohshima,Ei Shigematsu,Yuichiro Ando,Taishi Takenobu,Masashi Shiraishi###
(1769554, 1769556)
All-electric spin device operation using the Weyl semimetal, WTe2, at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###All-electric spin device operation using the Weyl semimetal, WTe$_2$, at room temperature|Kosuke Ohnishi,Motomi Aoki,Ryo Ohshima,Ei Shigematsu,Yuichiro Ando,Taishi Takenobu,Masashi Shiraishi###
(1769721, 1769722)
 Here, we report all-electric spin device operation using atype-II Weyl semimetal, WTe2, at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###All-electric spin device operation using the Weyl semimetal, WTe$_2$, at room temperature|Kosuke Ohnishi,Motomi Aoki,Ryo Ohshima,Ei Shigematsu,Yuichiro Ando,Taishi Takenobu,Masashi Shiraishi###
(1769729, 1769731)
 Here, we report all-electric spin device operation using atype-II Weyl semimetal, WTe2, at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###All-electric spin device operation using the Weyl semimetal, WTe$_2$, at room temperature|Kosuke Ohnishi,Motomi Aoki,Ryo Ohshima,Ei Shigematsu,Yuichiro Ando,Taishi Takenobu,Masashi Shiraishi###
(1769770, 1769772)
 The polarization of spinspropagating in the all-electric device is perpendicular to the WTe2 plane,which is ascribed to local in-plane symmetry breaking in WTe2, yielding thespin polarization creation of propagating charged carriers, namely, thespin-polarized state creation from the non-polarized state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###All-electric spin device operation using the Weyl semimetal, WTe$_2$, at room temperature|Kosuke Ohnishi,Motomi Aoki,Ryo Ohshima,Ei Shigematsu,Yuichiro Ando,Taishi Takenobu,Masashi Shiraishi###
(1769798, 1769800)
 The polarization of spinspropagating in the all-electric device is perpendicular to the WTe2 plane,which is ascribed to local in-plane symmetry breaking in WTe2, yielding thespin polarization creation of propagating charged carriers, namely, thespin-polarized state creation from the non-polarized state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Anomalous electrical transport and magnetic skyrmions in Mn-tuned Co9Zn9Mn2 single crystals|Fangyi Qi,Yalei Huang,Xinyu Yao,Wenlai Lu,Guixin Cao###
(1769979, 1769979)
Anomalous electrical transport and magnetic skyrmions in Mn-tuned Co9Zn9Mn2 single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[276.0, 2, 'K', 6]

Co9Zn9Mn2
###Anomalous electrical transport and magnetic skyrmions in Mn-tuned Co9Zn9Mn2 single crystals|Fangyi Qi,Yalei Huang,Xinyu Yao,Wenlai Lu,Guixin Cao###
(1769983, 1769988)
Anomalous electrical transport and magnetic skyrmions in Mn-tuned Co9Zn9Mn2 single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0.45,0,0,0.45,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[267.0, 2, 'K', 6]

Mn
###Anomalous electrical transport and magnetic skyrmions in Mn-tuned Co9Zn9Mn2 single crystals|Fangyi Qi,Yalei Huang,Xinyu Yao,Wenlai Lu,Guixin Cao###
(1769998, 1769998)
 b<missing VAR>eta-Mn-type CoxZnyMnz (x<missing VAR>  y<missing VAR>  z<missing VAR>  20) alloys have recently attractedincreasing attention as a new class of chiral magnets with skyrmions at andabove room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[257.0, 2, 'K', 5]

In
###Anomalous electrical transport and magnetic skyrmions in Mn-tuned Co9Zn9Mn2 single crystals|Fangyi Qi,Yalei Huang,Xinyu Yao,Wenlai Lu,Guixin Cao###
(1770089, 1770089)
 In this work, we report the successfulgrowth of the b<missing VAR>eta-Mn-type Co9.24Zn9.25Mn1.51 and Co9.02Zn9.18Mn1.80 singlecrystals and a systematic study on their magnetic and transport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 2, 'K', 3]

Mn
###Anomalous electrical transport and magnetic skyrmions in Mn-tuned Co9Zn9Mn2 single crystals|Fangyi Qi,Yalei Huang,Xinyu Yao,Wenlai Lu,Guixin Cao###
(1770114, 1770114)
 In this work, we report the successfulgrowth of the b<missing VAR>eta-Mn-type Co9.24Zn9.25Mn1.51 and Co9.02Zn9.18Mn1.80 singlecrystals and a systematic study on their magnetic and transport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 2, 'K', 3]

Co9.24Zn9.25Mn1.51
###Anomalous electrical transport and magnetic skyrmions in Mn-tuned Co9Zn9Mn2 single crystals|Fangyi Qi,Yalei Huang,Xinyu Yao,Wenlai Lu,Guixin Cao###
(1770118, 1770123)
 In this work, we report the successfulgrowth of the b<missing VAR>eta-Mn-type Co9.24Zn9.25Mn1.51 and Co9.02Zn9.18Mn1.80 singlecrystals and a systematic study on their magnetic and transport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07549999999999998,0,0.4619999999999999,0,0,0.4624999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 2, 'K', 3]

Co9.02Zn9.18Mn1.80
###Anomalous electrical transport and magnetic skyrmions in Mn-tuned Co9Zn9Mn2 single crystals|Fangyi Qi,Yalei Huang,Xinyu Yao,Wenlai Lu,Guixin Cao###
(1770127, 1770132)
 In this work, we report the successfulgrowth of the b<missing VAR>eta-Mn-type Co9.24Zn9.25Mn1.51 and Co9.02Zn9.18Mn1.80 singlecrystals and a systematic study on their magnetic and transport properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.09,0,0.45099999999999996,0,0,0.45899999999999996,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 2, 'K', 3]

K
###Anomalous electrical transport and magnetic skyrmions in Mn-tuned Co9Zn9Mn2 single crystals|Fangyi Qi,Yalei Huang,Xinyu Yao,Wenlai Lu,Guixin Cao###
(1770262, 1770262)
 Anegative linear magnetoresistance over a wide temperature range from 2 K to 380K is observed and attributed to the suppression of the magnetic orderingfluctuation under high fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 2, 'K', 0]

Co9.24Zn9.25Mn1.51
###Anomalous electrical transport and magnetic skyrmions in Mn-tuned Co9Zn9Mn2 single crystals|Fangyi Qi,Yalei Huang,Xinyu Yao,Wenlai Lu,Guixin Cao###
(1770345, 1770350)
 The quantitative analysis of the Hallresistance suggests that the anomalous Hall effect of Co9.24Zn9.25Mn1.51 andCo9.02Zn9.18Mn1.80 single crystals is dominated by the intrinsic mechanism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07549999999999998,0,0.4619999999999999,0,0,0.4624999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 2, 'K', 2]

Co9.02Zn9.18Mn1.80
###Anomalous electrical transport and magnetic skyrmions in Mn-tuned Co9Zn9Mn2 single crystals|Fangyi Qi,Yalei Huang,Xinyu Yao,Wenlai Lu,Guixin Cao###
(1770355, 1770360)
 The quantitative analysis of the Hallresistance suggests that the anomalous Hall effect of Co9.24Zn9.25Mn1.51 andCo9.02Zn9.18Mn1.80 single crystals is dominated by the intrinsic mechanism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.09,0,0.45099999999999996,0,0,0.45899999999999996,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 2, 'K', 2]

YbPdAs
###Semimetallic Kondo lattice behavior in YbPdAs with a distorted kagome structure|W. Xie,F. Du,X. Y. Zheng,H. Su,Z. Y. Nie,B. Q. Liu,Y. H. Xia,T. Shang,C. Cao,M. Smidman,T. Takabatake,H. Q. Yuan###
(1770458, 1770460)
Semimetallic Kondo lattice behavior in YbPdAs with a distorted kagome structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 6.6, 'K', 2],[144.0, 9, 'T', 2],[163.0, 33, '%', 3],[171.0, 2, ',', 3],[216.0, 30, 'and', 4],[217.0, 15, 'K', 4],[237.0, 12, 'K', 4]

YbPdAs
###Semimetallic Kondo lattice behavior in YbPdAs with a distorted kagome structure|W. Xie,F. Du,X. Y. Zheng,H. Su,Z. Y. Nie,B. Q. Liu,Y. H. Xia,T. Shang,C. Cao,M. Smidman,T. Takabatake,H. Q. Yuan###
(1770479, 1770481)
 We have synthesized YbPdAs with the hexagonal ZrNiAl-type structure, in whichthe Yb-atoms form a distorted kagome sublattice in the hexagonal basal plane.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 6.6, 'K', 1],[123.0, 9, 'T', 1],[142.0, 33, '%', 2],[150.0, 2, ',', 2],[195.0, 30, 'and', 3],[196.0, 15, 'K', 3],[216.0, 12, 'K', 3]

ZrNiAl
###Semimetallic Kondo lattice behavior in YbPdAs with a distorted kagome structure|W. Xie,F. Du,X. Y. Zheng,H. Su,Z. Y. Nie,B. Q. Liu,Y. H. Xia,T. Shang,C. Cao,M. Smidman,T. Takabatake,H. Q. Yuan###
(1770489, 1770491)
 We have synthesized YbPdAs with the hexagonal ZrNiAl-type structure, in whichthe Yb-atoms form a distorted kagome sublattice in the hexagonal basal plane.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 6.6, 'K', 1],[113.0, 9, 'T', 1],[132.0, 33, '%', 2],[140.0, 2, ',', 2],[185.0, 30, 'and', 3],[186.0, 15, 'K', 3],[206.0, 12, 'K', 3]

Yb
###Semimetallic Kondo lattice behavior in YbPdAs with a distorted kagome structure|W. Xie,F. Du,X. Y. Zheng,H. Su,Z. Y. Nie,B. Q. Liu,Y. H. Xia,T. Shang,C. Cao,M. Smidman,T. Takabatake,H. Q. Yuan###
(1770505, 1770505)
 We have synthesized YbPdAs with the hexagonal ZrNiAl-type structure, in whichthe Yb-atoms form a distorted kagome sublattice in the hexagonal basal plane.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 6.6, 'K', 1],[99.0, 9, 'T', 1],[118.0, 33, '%', 2],[126.0, 2, ',', 2],[171.0, 30, 'and', 3],[172.0, 15, 'K', 3],[192.0, 12, 'K', 3]

YbPdAs
###Semimetallic Kondo lattice behavior in YbPdAs with a distorted kagome structure|W. Xie,F. Du,X. Y. Zheng,H. Su,Z. Y. Nie,B. Q. Liu,Y. H. Xia,T. Shang,C. Cao,M. Smidman,T. Takabatake,H. Q. Yuan###
(1770547, 1770549)
Magnetic, transport, and thermodynamic measurements indicate that YbPdAs is alow-carrier Kondo lattice compound with an antiferromagnetic transition atT<missing VAR>mathrmN  6.6 K, which is slightly suppressed in applied magnetic fieldsup to 9 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 6.6, 'K', 0],[55.0, 9, 'T', 0],[74.0, 33, '%', 1],[82.0, 2, ',', 1],[127.0, 30, 'and', 2],[128.0, 15, 'K', 2],[148.0, 12, 'K', 2]

N
###Semimetallic Kondo lattice behavior in YbPdAs with a distorted kagome structure|W. Xie,F. Du,X. Y. Zheng,H. Su,Z. Y. Nie,B. Q. Liu,Y. H. Xia,T. Shang,C. Cao,M. Smidman,T. Takabatake,H. Q. Yuan###
(1770579, 1770579)
Magnetic, transport, and thermodynamic measurements indicate that YbPdAs is alow-carrier Kondo lattice compound with an antiferromagnetic transition atT<missing VAR>mathrmN  6.6 K, which is slightly suppressed in applied magnetic fieldsup to 9 T.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 6.6, 'K', 0],[25.0, 9, 'T', 0],[44.0, 33, '%', 1],[52.0, 2, ',', 1],[97.0, 30, 'and', 2],[98.0, 15, 'K', 2],[118.0, 12, 'K', 2]

N
###Semimetallic Kondo lattice behavior in YbPdAs with a distorted kagome structure|W. Xie,F. Du,X. Y. Zheng,H. Su,Z. Y. Nie,B. Q. Liu,Y. H. Xia,T. Shang,C. Cao,M. Smidman,T. Takabatake,H. Q. Yuan###
(1770617, 1770617)
 The magnetic entropy at T<missing VAR>mathrmN recovers only 33% ofR<missing VAR>ln2, the full entropy of the ground state doublet of the Yb-ions.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 6.6, 'K', 1],[13.0, 9, 'T', 1],[6.0, 33, '%', 0],[14.0, 2, ',', 0],[59.0, 30, 'and', 1],[60.0, 15, 'K', 1],[80.0, 12, 'K', 1]

Yb
###Semimetallic Kondo lattice behavior in YbPdAs with a distorted kagome structure|W. Xie,F. Du,X. Y. Zheng,H. Su,Z. Y. Nie,B. Q. Liu,Y. H. Xia,T. Shang,C. Cao,M. Smidman,T. Takabatake,H. Q. Yuan###
(1770654, 1770654)
 The magnetic entropy at T<missing VAR>mathrmN recovers only 33% ofR<missing VAR>ln2, the full entropy of the ground state doublet of the Yb-ions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 6.6, 'K', 1],[50.0, 9, 'T', 1],[31.0, 33, '%', 0],[23.0, 2, ',', 0],[22.0, 30, 'and', 1],[23.0, 15, 'K', 1],[43.0, 12, 'K', 1]

YbPdAs
###Semimetallic Kondo lattice behavior in YbPdAs with a distorted kagome structure|W. Xie,F. Du,X. Y. Zheng,H. Su,Z. Y. Nie,B. Q. Liu,Y. H. Xia,T. Shang,C. Cao,M. Smidman,T. Takabatake,H. Q. Yuan###
(1770804, 1770806)
 Both the Hall resistivitymeasurements and band structure calculations indicate a relatively low carrierconcentration in YbPdAs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[223.0, 6.6, 'K', 4],[200.0, 9, 'T', 4],[181.0, 33, '%', 3],[173.0, 2, ',', 3],[128.0, 30, 'and', 2],[127.0, 15, 'K', 2],[107.0, 12, 'K', 2]

YbPdAs
###Semimetallic Kondo lattice behavior in YbPdAs with a distorted kagome structure|W. Xie,F. Du,X. Y. Zheng,H. Su,Z. Y. Nie,B. Q. Liu,Y. H. Xia,T. Shang,C. Cao,M. Smidman,T. Takabatake,H. Q. Yuan###
(1770817, 1770819)
 Our results suggest that YbPdAs could provide anopportunity for examining the interplay of Kondo physics and magneticfrustration in low carrier systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[236.0, 6.6, 'K', 5],[213.0, 9, 'T', 5],[194.0, 33, '%', 4],[186.0, 2, ',', 4],[141.0, 30, 'and', 3],[140.0, 15, 'K', 3],[120.0, 12, 'K', 3]

Fe3GeTe2
###Dominance of Electron-Magnon Scattering in Itinerant Ferromagnet Fe3GeTe2|P. Saha,M. Singh,V. Nagpal,P. Das,S. Patnaik###
(1770884, 1770888)
Dominance of Electron-Magnon Scattering in Itinerant Ferromagnet Fe3GeTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 230, 'K', 1]

Fe3GeTe2
###Dominance of Electron-Magnon Scattering in Itinerant Ferromagnet Fe3GeTe2|P. Saha,M. Singh,V. Nagpal,P. Das,S. Patnaik###
(1770891, 1770895)
 Fe3GeTe2 is a 2-dimensional van der Waals material exhibiting itinerantferromagnetism upto 230 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 230, 'K', 0]

Fe3Ge2Te2
###Dominance of Electron-Magnon Scattering in Itinerant Ferromagnet Fe3GeTe2|P. Saha,M. Singh,V. Nagpal,P. Das,S. Patnaik###
(1770942, 1770947)
 Here, we study aspects of scattering mechanism inFe3Ge2Te2 single crystals via resistivity, magneto-transport and Hall effectmeasurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 230, 'K', 1]

C
###Dominance of Electron-Magnon Scattering in Itinerant Ferromagnet Fe3GeTe2|P. Saha,M. Singh,V. Nagpal,P. Das,S. Patnaik###
(1771085, 1771085)
The linear negative MR at high fields for T<missing VAR> < T<missing VAR>C corroborates to thesuppression in magnon population due to the damping of spin waves.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 230, 'K', 4]

In
###Dominance of Electron-Magnon Scattering in Itinerant Ferromagnet Fe3GeTe2|P. Saha,M. Singh,V. Nagpal,P. Das,S. Patnaik###
(1771117, 1771117)
 In the hightemperature regime T<missing VAR> > T<missing VAR>C,MR can be described by the scattering from spinfluctuations using the model described by Khosla and Fischer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[196.0, 230, 'K', 5]

C
###Dominance of Electron-Magnon Scattering in Itinerant Ferromagnet Fe3GeTe2|P. Saha,M. Singh,V. Nagpal,P. Das,S. Patnaik###
(1771133, 1771133)
 In the hightemperature regime T<missing VAR> > T<missing VAR>C,MR can be described by the scattering from spinfluctuations using the model described by Khosla and Fischer.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[212.0, 230, 'K', 5]

Cu
###Interface-Assisted Room-Temperature Magnetoresistance in Cu-Phenalenyl-based Magnetic Tunnel Junctions|Neha Jha,Anand Paryar,Tahereh Sadat Parvini,Christian Denker,Pavan K. Vardhanapu,Gonela Vijaykumar,Arne Ahrens,Michael Seibt,Jagadeesh S. Moodera,Swadhin K. Mandal,Markus Münzenberg###
(1771334, 1771334)
Interface-Assisted Room-Temperature Magnetoresistance in Cu-Phenalenyl-based Magnetic Tunnel Junctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[266.0, 14, 'percent', 4]

P
###Interface-Assisted Room-Temperature Magnetoresistance in Cu-Phenalenyl-based Magnetic Tunnel Junctions|Neha Jha,Anand Paryar,Tahereh Sadat Parvini,Christian Denker,Pavan K. Vardhanapu,Gonela Vijaykumar,Arne Ahrens,Michael Seibt,Jagadeesh S. Moodera,Swadhin K. Mandal,Markus Münzenberg###
(1771372, 1771372)
 Delocalized carbon-based radical species with unpaired spin, such asphenalenyl (PL<missing VAR>Y) radical, opened avenues for developing multifunctional organicspintronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[228.0, 14, 'percent', 3]

Y
###Interface-Assisted Room-Temperature Magnetoresistance in Cu-Phenalenyl-based Magnetic Tunnel Junctions|Neha Jha,Anand Paryar,Tahereh Sadat Parvini,Christian Denker,Pavan K. Vardhanapu,Gonela Vijaykumar,Arne Ahrens,Michael Seibt,Jagadeesh S. Moodera,Swadhin K. Mandal,Markus Münzenberg###
(1771374, 1771374)
 Delocalized carbon-based radical species with unpaired spin, such asphenalenyl (PL<missing VAR>Y) radical, opened avenues for developing multifunctional organicspintronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[226.0, 14, 'percent', 3]

P
###Interface-Assisted Room-Temperature Magnetoresistance in Cu-Phenalenyl-based Magnetic Tunnel Junctions|Neha Jha,Anand Paryar,Tahereh Sadat Parvini,Christian Denker,Pavan K. Vardhanapu,Gonela Vijaykumar,Arne Ahrens,Michael Seibt,Jagadeesh S. Moodera,Swadhin K. Mandal,Markus Münzenberg###
(1771439, 1771439)
 Here we develop a novel technique based on athree-dimensional shadow mask and the in-situ deposition to fabricate PL<missing VAR>Y-,Cu-PL<missing VAR>Y-, and Zn-PL<missing VAR>Y-based organic magnetic tunnel junctions (OMTJs) with area3x<missing VAR>8 mum<missing VAR>2 and improved morphology.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 14, 'percent', 2]

Y
###Interface-Assisted Room-Temperature Magnetoresistance in Cu-Phenalenyl-based Magnetic Tunnel Junctions|Neha Jha,Anand Paryar,Tahereh Sadat Parvini,Christian Denker,Pavan K. Vardhanapu,Gonela Vijaykumar,Arne Ahrens,Michael Seibt,Jagadeesh S. Moodera,Swadhin K. Mandal,Markus Münzenberg###
(1771441, 1771441)
 Here we develop a novel technique based on athree-dimensional shadow mask and the in-situ deposition to fabricate PL<missing VAR>Y-,Cu-PL<missing VAR>Y-, and Zn-PL<missing VAR>Y-based organic magnetic tunnel junctions (OMTJs) with area3x<missing VAR>8 mum<missing VAR>2 and improved morphology.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[159.0, 14, 'percent', 2]

Cu
###Interface-Assisted Room-Temperature Magnetoresistance in Cu-Phenalenyl-based Magnetic Tunnel Junctions|Neha Jha,Anand Paryar,Tahereh Sadat Parvini,Christian Denker,Pavan K. Vardhanapu,Gonela Vijaykumar,Arne Ahrens,Michael Seibt,Jagadeesh S. Moodera,Swadhin K. Mandal,Markus Münzenberg###
(1771446, 1771446)
 Here we develop a novel technique based on athree-dimensional shadow mask and the in-situ deposition to fabricate PL<missing VAR>Y-,Cu-PL<missing VAR>Y-, and Zn-PL<missing VAR>Y-based organic magnetic tunnel junctions (OMTJs) with area3x<missing VAR>8 mum<missing VAR>2 and improved morphology.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 14, 'percent', 2]

P
###Interface-Assisted Room-Temperature Magnetoresistance in Cu-Phenalenyl-based Magnetic Tunnel Junctions|Neha Jha,Anand Paryar,Tahereh Sadat Parvini,Christian Denker,Pavan K. Vardhanapu,Gonela Vijaykumar,Arne Ahrens,Michael Seibt,Jagadeesh S. Moodera,Swadhin K. Mandal,Markus Münzenberg###
(1771448, 1771448)
 Here we develop a novel technique based on athree-dimensional shadow mask and the in-situ deposition to fabricate PL<missing VAR>Y-,Cu-PL<missing VAR>Y-, and Zn-PL<missing VAR>Y-based organic magnetic tunnel junctions (OMTJs) with area3x<missing VAR>8 mum<missing VAR>2 and improved morphology.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 14, 'percent', 2]

Y
###Interface-Assisted Room-Temperature Magnetoresistance in Cu-Phenalenyl-based Magnetic Tunnel Junctions|Neha Jha,Anand Paryar,Tahereh Sadat Parvini,Christian Denker,Pavan K. Vardhanapu,Gonela Vijaykumar,Arne Ahrens,Michael Seibt,Jagadeesh S. Moodera,Swadhin K. Mandal,Markus Münzenberg###
(1771450, 1771450)
 Here we develop a novel technique based on athree-dimensional shadow mask and the in-situ deposition to fabricate PL<missing VAR>Y-,Cu-PL<missing VAR>Y-, and Zn-PL<missing VAR>Y-based organic magnetic tunnel junctions (OMTJs) with area3x<missing VAR>8 mum<missing VAR>2 and improved morphology.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 14, 'percent', 2]

Zn
###Interface-Assisted Room-Temperature Magnetoresistance in Cu-Phenalenyl-based Magnetic Tunnel Junctions|Neha Jha,Anand Paryar,Tahereh Sadat Parvini,Christian Denker,Pavan K. Vardhanapu,Gonela Vijaykumar,Arne Ahrens,Michael Seibt,Jagadeesh S. Moodera,Swadhin K. Mandal,Markus Münzenberg###
(1771456, 1771456)
 Here we develop a novel technique based on athree-dimensional shadow mask and the in-situ deposition to fabricate PL<missing VAR>Y-,Cu-PL<missing VAR>Y-, and Zn-PL<missing VAR>Y-based organic magnetic tunnel junctions (OMTJs) with area3x<missing VAR>8 mum<missing VAR>2 and improved morphology.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 14, 'percent', 2]

P
###Interface-Assisted Room-Temperature Magnetoresistance in Cu-Phenalenyl-based Magnetic Tunnel Junctions|Neha Jha,Anand Paryar,Tahereh Sadat Parvini,Christian Denker,Pavan K. Vardhanapu,Gonela Vijaykumar,Arne Ahrens,Michael Seibt,Jagadeesh S. Moodera,Swadhin K. Mandal,Markus Münzenberg###
(1771458, 1771458)
 Here we develop a novel technique based on athree-dimensional shadow mask and the in-situ deposition to fabricate PL<missing VAR>Y-,Cu-PL<missing VAR>Y-, and Zn-PL<missing VAR>Y-based organic magnetic tunnel junctions (OMTJs) with area3x<missing VAR>8 mum<missing VAR>2 and improved morphology.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 14, 'percent', 2]

Y
###Interface-Assisted Room-Temperature Magnetoresistance in Cu-Phenalenyl-based Magnetic Tunnel Junctions|Neha Jha,Anand Paryar,Tahereh Sadat Parvini,Christian Denker,Pavan K. Vardhanapu,Gonela Vijaykumar,Arne Ahrens,Michael Seibt,Jagadeesh S. Moodera,Swadhin K. Mandal,Markus Münzenberg###
(1771460, 1771460)
 Here we develop a novel technique based on athree-dimensional shadow mask and the in-situ deposition to fabricate PL<missing VAR>Y-,Cu-PL<missing VAR>Y-, and Zn-PL<missing VAR>Y-based organic magnetic tunnel junctions (OMTJs) with area3x<missing VAR>8 mum<missing VAR>2 and improved morphology.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 14, 'percent', 2]

O
###Interface-Assisted Room-Temperature Magnetoresistance in Cu-Phenalenyl-based Magnetic Tunnel Junctions|Neha Jha,Anand Paryar,Tahereh Sadat Parvini,Christian Denker,Pavan K. Vardhanapu,Gonela Vijaykumar,Arne Ahrens,Michael Seibt,Jagadeesh S. Moodera,Swadhin K. Mandal,Markus Münzenberg###
(1771473, 1771473)
 Here we develop a novel technique based on athree-dimensional shadow mask and the in-situ deposition to fabricate PL<missing VAR>Y-,Cu-PL<missing VAR>Y-, and Zn-PL<missing VAR>Y-based organic magnetic tunnel junctions (OMTJs) with area3x<missing VAR>8 mum<missing VAR>2 and improved morphology.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 14, 'percent', 2]

I
###Interface-Assisted Room-Temperature Magnetoresistance in Cu-Phenalenyl-based Magnetic Tunnel Junctions|Neha Jha,Anand Paryar,Tahereh Sadat Parvini,Christian Denker,Pavan K. Vardhanapu,Gonela Vijaykumar,Arne Ahrens,Michael Seibt,Jagadeesh S. Moodera,Swadhin K. Mandal,Markus Münzenberg###
(1771517, 1771517)
 The nonlinear and weaklytemperature-dependent current-voltage (I-V) characteristics in combination withthe low organic barrier height suggest tunneling as the dominant transportmechanism in the structurally and dimensionally optimized OMTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 14, 'percent', 1]

V
###Interface-Assisted Room-Temperature Magnetoresistance in Cu-Phenalenyl-based Magnetic Tunnel Junctions|Neha Jha,Anand Paryar,Tahereh Sadat Parvini,Christian Denker,Pavan K. Vardhanapu,Gonela Vijaykumar,Arne Ahrens,Michael Seibt,Jagadeesh S. Moodera,Swadhin K. Mandal,Markus Münzenberg###
(1771519, 1771519)
 The nonlinear and weaklytemperature-dependent current-voltage (I-V) characteristics in combination withthe low organic barrier height suggest tunneling as the dominant transportmechanism in the structurally and dimensionally optimized OMTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 14, 'percent', 1]

O
###Interface-Assisted Room-Temperature Magnetoresistance in Cu-Phenalenyl-based Magnetic Tunnel Junctions|Neha Jha,Anand Paryar,Tahereh Sadat Parvini,Christian Denker,Pavan K. Vardhanapu,Gonela Vijaykumar,Arne Ahrens,Michael Seibt,Jagadeesh S. Moodera,Swadhin K. Mandal,Markus Münzenberg###
(1771568, 1771568)
 The nonlinear and weaklytemperature-dependent current-voltage (I-V) characteristics in combination withthe low organic barrier height suggest tunneling as the dominant transportmechanism in the structurally and dimensionally optimized OMTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 14, 'percent', 1]

Cu
###Interface-Assisted Room-Temperature Magnetoresistance in Cu-Phenalenyl-based Magnetic Tunnel Junctions|Neha Jha,Anand Paryar,Tahereh Sadat Parvini,Christian Denker,Pavan K. Vardhanapu,Gonela Vijaykumar,Arne Ahrens,Michael Seibt,Jagadeesh S. Moodera,Swadhin K. Mandal,Markus Münzenberg###
(1771574, 1771574)
 Cu-PL<missing VAR>Y-basedOMTJs, show a significant magnetoresistance up to 14 percent at roomtemperature due to the formation of hybrid states at the metal-moleculeinterfaces called spinterface, which reveals the importance of spin-dependentinterfacial modification in OMTJs design.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 14, 'percent', 0]

P
###Interface-Assisted Room-Temperature Magnetoresistance in Cu-Phenalenyl-based Magnetic Tunnel Junctions|Neha Jha,Anand Paryar,Tahereh Sadat Parvini,Christian Denker,Pavan K. Vardhanapu,Gonela Vijaykumar,Arne Ahrens,Michael Seibt,Jagadeesh S. Moodera,Swadhin K. Mandal,Markus Münzenberg###
(1771576, 1771576)
 Cu-PL<missing VAR>Y-basedOMTJs, show a significant magnetoresistance up to 14 percent at roomtemperature due to the formation of hybrid states at the metal-moleculeinterfaces called spinterface, which reveals the importance of spin-dependentinterfacial modification in OMTJs design.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 14, 'percent', 0]

Y
###Interface-Assisted Room-Temperature Magnetoresistance in Cu-Phenalenyl-based Magnetic Tunnel Junctions|Neha Jha,Anand Paryar,Tahereh Sadat Parvini,Christian Denker,Pavan K. Vardhanapu,Gonela Vijaykumar,Arne Ahrens,Michael Seibt,Jagadeesh S. Moodera,Swadhin K. Mandal,Markus Münzenberg###
(1771578, 1771578)
 Cu-PL<missing VAR>Y-basedOMTJs, show a significant magnetoresistance up to 14 percent at roomtemperature due to the formation of hybrid states at the metal-moleculeinterfaces called spinterface, which reveals the importance of spin-dependentinterfacial modification in OMTJs design.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 14, 'percent', 0]

O
###Interface-Assisted Room-Temperature Magnetoresistance in Cu-Phenalenyl-based Magnetic Tunnel Junctions|Neha Jha,Anand Paryar,Tahereh Sadat Parvini,Christian Denker,Pavan K. Vardhanapu,Gonela Vijaykumar,Arne Ahrens,Michael Seibt,Jagadeesh S. Moodera,Swadhin K. Mandal,Markus Münzenberg###
(1771583, 1771583)
 Cu-PL<missing VAR>Y-basedOMTJs, show a significant magnetoresistance up to 14 percent at roomtemperature due to the formation of hybrid states at the metal-moleculeinterfaces called spinterface, which reveals the importance of spin-dependentinterfacial modification in OMTJs design.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 14, 'percent', 0]

O
###Interface-Assisted Room-Temperature Magnetoresistance in Cu-Phenalenyl-based Magnetic Tunnel Junctions|Neha Jha,Anand Paryar,Tahereh Sadat Parvini,Christian Denker,Pavan K. Vardhanapu,Gonela Vijaykumar,Arne Ahrens,Michael Seibt,Jagadeesh S. Moodera,Swadhin K. Mandal,Markus Münzenberg###
(1771660, 1771660)
 Cu-PL<missing VAR>Y-basedOMTJs, show a significant magnetoresistance up to 14 percent at roomtemperature due to the formation of hybrid states at the metal-moleculeinterfaces called spinterface, which reveals the importance of spin-dependentinterfacial modification in OMTJs design.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 14, 'percent', 0]

In
###Interface-Assisted Room-Temperature Magnetoresistance in Cu-Phenalenyl-based Magnetic Tunnel Junctions|Neha Jha,Anand Paryar,Tahereh Sadat Parvini,Christian Denker,Pavan K. Vardhanapu,Gonela Vijaykumar,Arne Ahrens,Michael Seibt,Jagadeesh S. Moodera,Swadhin K. Mandal,Markus Münzenberg###
(1771668, 1771668)
 In particular, Cu-PL<missing VAR>Y OMTJs shows astable voltage-driven resistive switching response that suggests their use as anew viable and scalable platform for building molecular scale quantummemristors and processors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 14, 'percent', 1]

Cu
###Interface-Assisted Room-Temperature Magnetoresistance in Cu-Phenalenyl-based Magnetic Tunnel Junctions|Neha Jha,Anand Paryar,Tahereh Sadat Parvini,Christian Denker,Pavan K. Vardhanapu,Gonela Vijaykumar,Arne Ahrens,Michael Seibt,Jagadeesh S. Moodera,Swadhin K. Mandal,Markus Münzenberg###
(1771673, 1771673)
 In particular, Cu-PL<missing VAR>Y OMTJs shows astable voltage-driven resistive switching response that suggests their use as anew viable and scalable platform for building molecular scale quantummemristors and processors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 14, 'percent', 1]

P
###Interface-Assisted Room-Temperature Magnetoresistance in Cu-Phenalenyl-based Magnetic Tunnel Junctions|Neha Jha,Anand Paryar,Tahereh Sadat Parvini,Christian Denker,Pavan K. Vardhanapu,Gonela Vijaykumar,Arne Ahrens,Michael Seibt,Jagadeesh S. Moodera,Swadhin K. Mandal,Markus Münzenberg###
(1771675, 1771675)
 In particular, Cu-PL<missing VAR>Y OMTJs shows astable voltage-driven resistive switching response that suggests their use as anew viable and scalable platform for building molecular scale quantummemristors and processors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 14, 'percent', 1]

Y
###Interface-Assisted Room-Temperature Magnetoresistance in Cu-Phenalenyl-based Magnetic Tunnel Junctions|Neha Jha,Anand Paryar,Tahereh Sadat Parvini,Christian Denker,Pavan K. Vardhanapu,Gonela Vijaykumar,Arne Ahrens,Michael Seibt,Jagadeesh S. Moodera,Swadhin K. Mandal,Markus Münzenberg###
(1771677, 1771677)
 In particular, Cu-PL<missing VAR>Y OMTJs shows astable voltage-driven resistive switching response that suggests their use as anew viable and scalable platform for building molecular scale quantummemristors and processors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 14, 'percent', 1]

O
###Interface-Assisted Room-Temperature Magnetoresistance in Cu-Phenalenyl-based Magnetic Tunnel Junctions|Neha Jha,Anand Paryar,Tahereh Sadat Parvini,Christian Denker,Pavan K. Vardhanapu,Gonela Vijaykumar,Arne Ahrens,Michael Seibt,Jagadeesh S. Moodera,Swadhin K. Mandal,Markus Münzenberg###
(1771679, 1771679)
 In particular, Cu-PL<missing VAR>Y OMTJs shows astable voltage-driven resistive switching response that suggests their use as anew viable and scalable platform for building molecular scale quantummemristors and processors.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 14, 'percent', 1]

SrTiO3
###Band-folding-driven high tunnel magnetoresistance ratios in (111)-oriented junctions with SrTiO$_3$ barriers|Keisuke Masuda,Hiroyoshi Itoh,Yoshiaki Sonobe,Hiroaki Sukegawa,Seiji Mitani,Yoshio Miura###
(1771776, 1771779)
Band-folding-driven high tunnel magnetoresistance ratios in (111)-oriented junctions with SrTiO3 barriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 500, '%', 2],[162.0, 290, '%', 2]

SrTiO3
###Band-folding-driven high tunnel magnetoresistance ratios in (111)-oriented junctions with SrTiO$_3$ barriers|Keisuke Masuda,Hiroyoshi Itoh,Yoshiaki Sonobe,Hiroaki Sukegawa,Seiji Mitani,Yoshio Miura###
(1771827, 1771830)
 We theoretically study the tunnel magnetoresistance (TMR) effect in(111)-oriented magnetic tunnel junctions (MTJs) with SrTiO3 barriers,Co/SrTiO3/Co(111) and Ni/SrTiO3/Ni(111).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 500, '%', 1],[111.0, 290, '%', 1]

Co/SrTiO3
###Band-folding-driven high tunnel magnetoresistance ratios in (111)-oriented junctions with SrTiO$_3$ barriers|Keisuke Masuda,Hiroyoshi Itoh,Yoshiaki Sonobe,Hiroaki Sukegawa,Seiji Mitani,Yoshio Miura###
(1771836, 1771841)
 We theoretically study the tunnel magnetoresistance (TMR) effect in(111)-oriented magnetic tunnel junctions (MTJs) with SrTiO3 barriers,Co/SrTiO3/Co(111) and Ni/SrTiO3/Ni(111).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[74.0, 500, '%', 1],[100.0, 290, '%', 1]

Ni/SrTiO3
###Band-folding-driven high tunnel magnetoresistance ratios in (111)-oriented junctions with SrTiO$_3$ barriers|Keisuke Masuda,Hiroyoshi Itoh,Yoshiaki Sonobe,Hiroaki Sukegawa,Seiji Mitani,Yoshio Miura###
(1771850, 1771855)
 We theoretically study the tunnel magnetoresistance (TMR) effect in(111)-oriented magnetic tunnel junctions (MTJs) with SrTiO3 barriers,Co/SrTiO3/Co(111) and Ni/SrTiO3/Ni(111).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[60.0, 500, '%', 1],[86.0, 290, '%', 1]

Co
###Band-folding-driven high tunnel magnetoresistance ratios in (111)-oriented junctions with SrTiO$_3$ barriers|Keisuke Masuda,Hiroyoshi Itoh,Yoshiaki Sonobe,Hiroaki Sukegawa,Seiji Mitani,Yoshio Miura###
(1771892, 1771892)
 Our analysis combining thefirst-principles calculation and the Landauer formula shows that the Co-basedMTJ has a high TMR ratio over 500%, while the Ni-based MTJ has a smaller value(290%).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 500, '%', 0],[49.0, 290, '%', 0]

Ni
###Band-folding-driven high tunnel magnetoresistance ratios in (111)-oriented junctions with SrTiO$_3$ barriers|Keisuke Masuda,Hiroyoshi Itoh,Yoshiaki Sonobe,Hiroaki Sukegawa,Seiji Mitani,Yoshio Miura###
(1771923, 1771923)
 Our analysis combining thefirst-principles calculation and the Landauer formula shows that the Co-basedMTJ has a high TMR ratio over 500%, while the Ni-based MTJ has a smaller value(290%).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 500, '%', 0],[18.0, 290, '%', 0]

SrTiO3
###Band-folding-driven high tunnel magnetoresistance ratios in (111)-oriented junctions with SrTiO$_3$ barriers|Keisuke Masuda,Hiroyoshi Itoh,Yoshiaki Sonobe,Hiroaki Sukegawa,Seiji Mitani,Yoshio Miura###
(1771960, 1771963)
 Since the in-plane lattice periodicity of SrTiO3 is about twicethat of the primitive cell of fcc Co (Ni), the original bands of Co (Ni) arefolded in the kx-ky plane corresponding to the ab plane of the MTJsupercell.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 500, '%', 1],[19.0, 290, '%', 1]

Co
###Band-folding-driven high tunnel magnetoresistance ratios in (111)-oriented junctions with SrTiO$_3$ barriers|Keisuke Masuda,Hiroyoshi Itoh,Yoshiaki Sonobe,Hiroaki Sukegawa,Seiji Mitani,Yoshio Miura###
(1771986, 1771986)
 Since the in-plane lattice periodicity of SrTiO3 is about twicethat of the primitive cell of fcc Co (Ni), the original bands of Co (Ni) arefolded in the kx-ky plane corresponding to the ab plane of the MTJsupercell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 500, '%', 1],[45.0, 290, '%', 1]

(Ni)
###Band-folding-driven high tunnel magnetoresistance ratios in (111)-oriented junctions with SrTiO$_3$ barriers|Keisuke Masuda,Hiroyoshi Itoh,Yoshiaki Sonobe,Hiroaki Sukegawa,Seiji Mitani,Yoshio Miura###
(1771988, 1771990)
 Since the in-plane lattice periodicity of SrTiO3 is about twicethat of the primitive cell of fcc Co (Ni), the original bands of Co (Ni) arefolded in the kx-ky plane corresponding to the ab plane of the MTJsupercell.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 500, '%', 1],[47.0, 290, '%', 1]

Co
###Band-folding-driven high tunnel magnetoresistance ratios in (111)-oriented junctions with SrTiO$_3$ barriers|Keisuke Masuda,Hiroyoshi Itoh,Yoshiaki Sonobe,Hiroaki Sukegawa,Seiji Mitani,Yoshio Miura###
(1772001, 1772001)
 Since the in-plane lattice periodicity of SrTiO3 is about twicethat of the primitive cell of fcc Co (Ni), the original bands of Co (Ni) arefolded in the kx-ky plane corresponding to the ab plane of the MTJsupercell.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 500, '%', 1],[60.0, 290, '%', 1]

(Ni)
###Band-folding-driven high tunnel magnetoresistance ratios in (111)-oriented junctions with SrTiO$_3$ barriers|Keisuke Masuda,Hiroyoshi Itoh,Yoshiaki Sonobe,Hiroaki Sukegawa,Seiji Mitani,Yoshio Miura###
(1772003, 1772005)
 Since the in-plane lattice periodicity of SrTiO3 is about twicethat of the primitive cell of fcc Co (Ni), the original bands of Co (Ni) arefolded in the kx-ky plane corresponding to the ab plane of the MTJsupercell.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 500, '%', 1],[62.0, 290, '%', 1]

Co
###Band-folding-driven high tunnel magnetoresistance ratios in (111)-oriented junctions with SrTiO$_3$ barriers|Keisuke Masuda,Hiroyoshi Itoh,Yoshiaki Sonobe,Hiroaki Sukegawa,Seiji Mitani,Yoshio Miura###
(1772082, 1772082)
 We find that this band folding gives a half-metallic band structurein the Lambda1 state of Co (Ni) and the coherent tunneling of such ahalf-metallic Lambda1 state yields a high TMR ratio.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 500, '%', 2],[141.0, 290, '%', 2]

(Ni)
###Band-folding-driven high tunnel magnetoresistance ratios in (111)-oriented junctions with SrTiO$_3$ barriers|Keisuke Masuda,Hiroyoshi Itoh,Yoshiaki Sonobe,Hiroaki Sukegawa,Seiji Mitani,Yoshio Miura###
(1772084, 1772086)
 We find that this band folding gives a half-metallic band structurein the Lambda1 state of Co (Ni) and the coherent tunneling of such ahalf-metallic Lambda1 state yields a high TMR ratio.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 500, '%', 2],[143.0, 290, '%', 2]

Co
###Band-folding-driven high tunnel magnetoresistance ratios in (111)-oriented junctions with SrTiO$_3$ barriers|Keisuke Masuda,Hiroyoshi Itoh,Yoshiaki Sonobe,Hiroaki Sukegawa,Seiji Mitani,Yoshio Miura###
(1772152, 1772152)
 We also reveal thatthe difference in the TMR ratio between the Co- and Ni-based MTJs can beunderstood by different s<missing VAR>-orbital weights in the Lambda1 band at theFermi level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[237.0, 500, '%', 3],[211.0, 290, '%', 3]

Ni
###Band-folding-driven high tunnel magnetoresistance ratios in (111)-oriented junctions with SrTiO$_3$ barriers|Keisuke Masuda,Hiroyoshi Itoh,Yoshiaki Sonobe,Hiroaki Sukegawa,Seiji Mitani,Yoshio Miura###
(1772157, 1772157)
 We also reveal thatthe difference in the TMR ratio between the Co- and Ni-based MTJs can beunderstood by different s<missing VAR>-orbital weights in the Lambda1 band at theFermi level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[242.0, 500, '%', 3],[216.0, 290, '%', 3]

InSb
###Field effect two-dimensional electron gases in modulation-doped InSb surface quantum wells|E. Annelise Bergeron,F. Sfigakis,Y. Shi,George Nichols,P. C. Klipstein,A. Elbaroudy,Sean M. Walker,Z. R. Wasilewski,J. Baugh###
(1772227, 1772228)
Field effect two-dimensional electron gases in modulation-doped InSb surface quantum wells.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 30, 'nm', 2],[110.0, 2, 'DEGs', 2],[213.0, -2, ',', 4],[226.0, 24, ',', 4],[312.0, 41, 'at', 6]

InSb
###Field effect two-dimensional electron gases in modulation-doped InSb surface quantum wells|E. Annelise Bergeron,F. Sfigakis,Y. Shi,George Nichols,P. C. Klipstein,A. Elbaroudy,Sean M. Walker,Z. R. Wasilewski,J. Baugh###
(1772336, 1772337)
 The topmost 5nm of the 30 nm wide quantum well is doped and shown to promote the formationof reliable, low resistance Ohmic contacts to surface InSb 2DEGs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 30, 'nm', 0],[1.0, 2, 'DEGs', 0],[104.0, -2, ',', 2],[117.0, 24, ',', 2],[203.0, 41, 'at', 4]

B18
###Field effect two-dimensional electron gases in modulation-doped InSb surface quantum wells|E. Annelise Bergeron,F. Sfigakis,Y. Shi,George Nichols,P. C. Klipstein,A. Elbaroudy,Sean M. Walker,Z. R. Wasilewski,J. Baugh###
(1772393, 1772394)
 High qualitysingle-subband magnetotransport with clear quantized integer quantum Hallplateaus are observed to filling factor nu1 in magnetic fields of up toB18 T<missing VAR>.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 30, 'nm', 1],[55.0, 2, 'DEGs', 1],[47.0, -2, ',', 1],[60.0, 24, ',', 1],[146.0, 41, 'at', 3]

V
###Field effect two-dimensional electron gases in modulation-doped InSb surface quantum wells|E. Annelise Bergeron,F. Sfigakis,Y. Shi,George Nichols,P. C. Klipstein,A. Elbaroudy,Sean M. Walker,Z. R. Wasilewski,J. Baugh###
(1772482, 1772482)
 Large Rashba spin-orbit coefficients up to 110meVcdotr<missing VAR>A are obtained through weak anti-localization measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 30, 'nm', 3],[144.0, 2, 'DEGs', 3],[41.0, -2, ',', 1],[28.0, 24, ',', 1],[58.0, 41, 'at', 1]

Al0.1In0.9Sb
###Field effect two-dimensional electron gases in modulation-doped InSb surface quantum wells|E. Annelise Bergeron,F. Sfigakis,Y. Shi,George Nichols,P. C. Klipstein,A. Elbaroudy,Sean M. Walker,Z. R. Wasilewski,J. Baugh###
(1772642, 1772646)
 By comparing two heterostructures with and without a delta-doped layerbeneath the quantum well, we find that the carrier density is stable with timewhen doping in the ternary Al0.1In0.9Sb barrier is not present.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.05,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.45,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[348.0, 30, 'nm', 5],[304.0, 2, 'DEGs', 5],[201.0, -2, ',', 3],[188.0, 24, ',', 3],[102.0, 41, 'at', 1]

B2
###Unusual magnetotransport in twisted bilayer graphene from strain-induced open Fermi surfaces|Xiaoyu Wang,Joe Finney,Aaron L. Sharpe,Linsey K. Rodenbach,Connie L. Hsueh,Kenji Watanabe,Takashi Taniguchi,M. A. Kastner,Oskar Vafek,David Goldhaber-Gordon###
(1772898, 1772899)
 Coupled to a Boltzmann magnetotransport calculation, this reproducespreviously-unexplained non-saturating B2 magnetoresistance over broad rangesof density near filling nupm 2, and predicts subtler features that had notbeen noticed in the experimental data.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 2, ',', 0]

In
###Unusual magnetotransport in twisted bilayer graphene from strain-induced open Fermi surfaces|Xiaoyu Wang,Joe Finney,Aaron L. Sharpe,Linsey K. Rodenbach,Connie L. Hsueh,Kenji Watanabe,Takashi Taniguchi,M. A. Kastner,Oskar Vafek,David Goldhaber-Gordon###
(1772952, 1772952)
 In contrast to these distinctivesignatures in longitudinal resistivity, the Hall coefficient is barelyinfluenced by strain, to the extent that it still shows a single sign change oneach side of the charge neutrality point -- surprisingly, this sign change nolonger occurs at a van Hove point.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 2, ',', 1]

C
###Control of chiral orbital currents in a colossal magnetoresistance material|Yu Zhang,Yifei Ni,Hengdi Zhao,Sami Hakani,Feng Ye,Lance DeLong,Itamar Kimchi,Gang Cao###
(1773191, 1773191)
 Colossal magnetoresistance (CMR) is an extraordinary enhancement of theelectric conductivity in the presence of a magnetic field.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn3Si2Te6
###Control of chiral orbital currents in a colossal magnetoresistance material|Yu Zhang,Yifei Ni,Hengdi Zhao,Sami Hakani,Feng Ye,Lance DeLong,Itamar Kimchi,Gang Cao###
(1773275, 1773280)
 However, ferrimagnetic Mn3Si2Te6is an intriguing exception to this rule it exhibits a 7-order-of-magnitudereduction in ab-plane resistivity with a 13-Tesla anisotropy field which occuronly when a magnetic polarization is avoided [1].
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0.2727272727272727,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5454545454545454,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(COC)
###Control of chiral orbital currents in a colossal magnetoresistance material|Yu Zhang,Yifei Ni,Hengdi Zhao,Sami Hakani,Feng Ye,Lance DeLong,Itamar Kimchi,Gang Cao###
(1773391, 1773395)
 Here we report an exoticquantum state that is driven by ab-plane chiral orbital currents (COC) flowingalong edges of MnTe6 octahedra.
Featurization successful!
0,0,0,0,0,0.6666666666666666,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnTe6
###Control of chiral orbital currents in a colossal magnetoresistance material|Yu Zhang,Yifei Ni,Hengdi Zhao,Sami Hakani,Feng Ye,Lance DeLong,Itamar Kimchi,Gang Cao###
(1773406, 1773408)
 Here we report an exoticquantum state that is driven by ab-plane chiral orbital currents (COC) flowingalong edges of MnTe6 octahedra.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

COC
###Control of chiral orbital currents in a colossal magnetoresistance material|Yu Zhang,Yifei Ni,Hengdi Zhao,Sami Hakani,Feng Ye,Lance DeLong,Itamar Kimchi,Gang Cao###
(1773429, 1773431)
 The c<missing VAR>-axis orbital moments of ab-plane COCcouple to the ferrimagnetic Mn spins to drastically increase the ab-planeconductivity (CMR) when an external magnetic field is aligned along themagnetic hard c<missing VAR>-axis.
Featurization terminated normally.
0,0,0,0,0,0.6666666666666666,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Control of chiral orbital currents in a colossal magnetoresistance material|Yu Zhang,Yifei Ni,Hengdi Zhao,Sami Hakani,Feng Ye,Lance DeLong,Itamar Kimchi,Gang Cao###
(1773442, 1773442)
 The c<missing VAR>-axis orbital moments of ab-plane COCcouple to the ferrimagnetic Mn spins to drastically increase the ab-planeconductivity (CMR) when an external magnetic field is aligned along themagnetic hard c<missing VAR>-axis.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Control of chiral orbital currents in a colossal magnetoresistance material|Yu Zhang,Yifei Ni,Hengdi Zhao,Sami Hakani,Feng Ye,Lance DeLong,Itamar Kimchi,Gang Cao###
(1773462, 1773462)
 The c<missing VAR>-axis orbital moments of ab-plane COCcouple to the ferrimagnetic Mn spins to drastically increase the ab-planeconductivity (CMR) when an external magnetic field is aligned along themagnetic hard c<missing VAR>-axis.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

COC
###Control of chiral orbital currents in a colossal magnetoresistance material|Yu Zhang,Yifei Ni,Hengdi Zhao,Sami Hakani,Feng Ye,Lance DeLong,Itamar Kimchi,Gang Cao###
(1773499, 1773501)
 Both the COC state and its CMR are extraordinarilysusceptible to small D<missing VAR>C currents exceeding a critical threshold, and a hallmarkof this COC state is an exotic time-dependent, bistable switching mimicking afirst-order melting transition.
Featurization terminated normally.
0,0,0,0,0,0.6666666666666666,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Control of chiral orbital currents in a colossal magnetoresistance material|Yu Zhang,Yifei Ni,Hengdi Zhao,Sami Hakani,Feng Ye,Lance DeLong,Itamar Kimchi,Gang Cao###
(1773509, 1773509)
 Both the COC state and its CMR are extraordinarilysusceptible to small D<missing VAR>C currents exceeding a critical threshold, and a hallmarkof this COC state is an exotic time-dependent, bistable switching mimicking afirst-order melting transition.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Control of chiral orbital currents in a colossal magnetoresistance material|Yu Zhang,Yifei Ni,Hengdi Zhao,Sami Hakani,Feng Ye,Lance DeLong,Itamar Kimchi,Gang Cao###
(1773525, 1773525)
 Both the COC state and its CMR are extraordinarilysusceptible to small D<missing VAR>C currents exceeding a critical threshold, and a hallmarkof this COC state is an exotic time-dependent, bistable switching mimicking afirst-order melting transition.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

COC
###Control of chiral orbital currents in a colossal magnetoresistance material|Yu Zhang,Yifei Ni,Hengdi Zhao,Sami Hakani,Feng Ye,Lance DeLong,Itamar Kimchi,Gang Cao###
(1773549, 1773551)
 Both the COC state and its CMR are extraordinarilysusceptible to small D<missing VAR>C currents exceeding a critical threshold, and a hallmarkof this COC state is an exotic time-dependent, bistable switching mimicking afirst-order melting transition.
Featurization terminated normally.
0,0,0,0,0,0.6666666666666666,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

COC
###Control of chiral orbital currents in a colossal magnetoresistance material|Yu Zhang,Yifei Ni,Hengdi Zhao,Sami Hakani,Feng Ye,Lance DeLong,Itamar Kimchi,Gang Cao###
(1773592, 1773594)
 The control of the COC-enabled CMR and bistableswitching offers a fundamentally new paradigm for quantum technologies.
Featurization terminated normally.
0,0,0,0,0,0.6666666666666666,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Control of chiral orbital currents in a colossal magnetoresistance material|Yu Zhang,Yifei Ni,Hengdi Zhao,Sami Hakani,Feng Ye,Lance DeLong,Itamar Kimchi,Gang Cao###
(1773598, 1773598)
 The control of the COC-enabled CMR and bistableswitching offers a fundamentally new paradigm for quantum technologies.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Proximity-induced diversified magnetic states and electrically-controllable spin polarization in bilayer graphene: Towards layered spintronics|Xuechao Zhai,Yaroslav M. Blanter###
(1773690, 1773690)
 Compared to monolayer graphene, electrons in Bernal-stacked bilayer graphene(BLG) have an additional layer degree of freedom, offering a platform fordeveloping it layered spintronics with the help of proximity-inducedmagnetism.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Proximity-induced diversified magnetic states and electrically-controllable spin polarization in bilayer graphene: Towards layered spintronics|Xuechao Zhai,Yaroslav M. Blanter###
(1773808, 1773808)
 Based on an effective phenomenological model, we systematicallystudy the effect of this magnetism on the spin-dependent band structure nearthe Fermi energy and identify the magnetic phases induced in BLG by proximitywith magnets.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Proximity-induced diversified magnetic states and electrically-controllable spin polarization in bilayer graphene: Towards layered spintronics|Xuechao Zhai,Yaroslav M. Blanter###
(1773838, 1773838)
 We show that spin polarization can develop in BLG due to thisproximity effect.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Proximity-induced diversified magnetic states and electrically-controllable spin polarization in bilayer graphene: Towards layered spintronics|Xuechao Zhai,Yaroslav M. Blanter###
(1773978, 1773978)
 By taking full advantage of layer-dependentmagnetism in BLG, we propose that spintronic devices such as a spin filter, agiant magnetoresistence device, and a spin diode can operate under fullyelectric control, which is easier than the common magnetic field control.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###High-field Studies on Layered Magnetic and Polar Dirac Metals|Hideaki Sakai###
(1774189, 1774189)
 Here, wepropose that the layered material AMnX<missing VAR>2 (A alkaline and rare-earthions, X<missing VAR> Sb, Bi) is a promising platform for systematically exploringstrongly correlated Dirac metals, which consists of the alternative stack ofthe X<missing VAR>- square net layer hosting a 2D Dirac fermion and theA2-Mn2-X3- magnetic block layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 2, 'D', 0]

Sb
###High-field Studies on Layered Magnetic and Polar Dirac Metals|Hideaki Sakai###
(1774210, 1774210)
 Here, wepropose that the layered material AMnX<missing VAR>2 (A alkaline and rare-earthions, X<missing VAR> Sb, Bi) is a promising platform for systematically exploringstrongly correlated Dirac metals, which consists of the alternative stack ofthe X<missing VAR>- square net layer hosting a 2D Dirac fermion and theA2-Mn2-X3- magnetic block layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 2, 'D', 0]

Bi
###High-field Studies on Layered Magnetic and Polar Dirac Metals|Hideaki Sakai###
(1774213, 1774213)
 Here, wepropose that the layered material AMnX<missing VAR>2 (A alkaline and rare-earthions, X<missing VAR> Sb, Bi) is a promising platform for systematically exploringstrongly correlated Dirac metals, which consists of the alternative stack ofthe X<missing VAR>- square net layer hosting a 2D Dirac fermion and theA2-Mn2-X3- magnetic block layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 2, 'D', 0]

Mn2-X
###High-field Studies on Layered Magnetic and Polar Dirac Metals|Hideaki Sakai###
(1774283, 1774286)
 Here, wepropose that the layered material AMnX<missing VAR>2 (A alkaline and rare-earthions, X<missing VAR> Sb, Bi) is a promising platform for systematically exploringstrongly correlated Dirac metals, which consists of the alternative stack ofthe X<missing VAR>- square net layer hosting a 2D Dirac fermion and theA2-Mn2-X3- magnetic block layer.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[14.0, 2, 'D', 0]

In
###High-field Studies on Layered Magnetic and Polar Dirac Metals|Hideaki Sakai###
(1774297, 1774297)
 In this article, we shallreview recent high-field studies on this series of materials to demonstratethat various types of Dirac fermions are realized by designing the block layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 2, 'D', 1]

EuMnBi2
###High-field Studies on Layered Magnetic and Polar Dirac Metals|Hideaki Sakai###
(1774394, 1774397)
First, we give an overview of the Dirac fermion coupled with the magnetic orderin EuMnBi2 (AEu).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 2, 'D', 2]

Eu
###High-field Studies on Layered Magnetic and Polar Dirac Metals|Hideaki Sakai###
(1774401, 1774401)
First, we give an overview of the Dirac fermion coupled with the magnetic orderin EuMnBi2 (AEu).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 2, 'D', 2]

Eu
###High-field Studies on Layered Magnetic and Polar Dirac Metals|Hideaki Sakai###
(1774436, 1774436)
 This material exhibits large magnetoresistance by thefield-induced change in the magnetic order of Eu layers, which is associatedwith the strong exchange interaction between the Dirac fermion and the local Eumoment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 2, 'D', 3]

Eu
###High-field Studies on Layered Magnetic and Polar Dirac Metals|Hideaki Sakai###
(1774472, 1774472)
 This material exhibits large magnetoresistance by thefield-induced change in the magnetic order of Eu layers, which is associatedwith the strong exchange interaction between the Dirac fermion and the local Eumoment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[203.0, 2, 'D', 3]

BaMn
###High-field Studies on Layered Magnetic and Polar Dirac Metals|Hideaki Sakai###
(1774504, 1774505)
 Second, we review the Dirac fermion coupled with the latticepolarization in BaMnX<missing VAR>2 (ABa).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[235.0, 2, 'D', 4]

Ba
###High-field Studies on Layered Magnetic and Polar Dirac Metals|Hideaki Sakai###
(1774511, 1774511)
 Second, we review the Dirac fermion coupled with the latticepolarization in BaMnX<missing VAR>2 (ABa).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[242.0, 2, 'D', 4]

In
###In-plane electronic anisotropy revealed by interlayer resistivity measurements on the iron-based superconductor parent compound CaFeAsF|Taichi Terashima,Hishiro T. Hirose,Yoshitaka Matsushita,Shinya Uji,Hiroaki Ikeda,Yuki Fuseya,Teng Wang,Gang Mu###
(1774584, 1774584)
In-plane electronic anisotropy revealed by interlayer resistivity measurements on the iron-based superconductor parent compound CaFeAsF.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[310.0, 4, 'K', 7],[316.0, 14, 'T', 7]

CaFeAsF
###In-plane electronic anisotropy revealed by interlayer resistivity measurements on the iron-based superconductor parent compound CaFeAsF|Taichi Terashima,Hishiro T. Hirose,Yoshitaka Matsushita,Shinya Uji,Hiroaki Ikeda,Yuki Fuseya,Teng Wang,Gang Mu###
(1774616, 1774619)
In-plane electronic anisotropy revealed by interlayer resistivity measurements on the iron-based superconductor parent compound CaFeAsF.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[275.0, 4, 'K', 7],[281.0, 14, 'T', 7]

CaFeAsF
###In-plane electronic anisotropy revealed by interlayer resistivity measurements on the iron-based superconductor parent compound CaFeAsF|Taichi Terashima,Hishiro T. Hirose,Yoshitaka Matsushita,Shinya Uji,Hiroaki Ikeda,Yuki Fuseya,Teng Wang,Gang Mu###
(1774747, 1774750)
 Here, we investigate the electronic anisotropy of CaFeAsF bymeasuring its interlayer resistivity under magnetic fields with varying fielddirections.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 4, 'K', 3],[150.0, 14, 'T', 3]

B
###In-plane electronic anisotropy revealed by interlayer resistivity measurements on the iron-based superconductor parent compound CaFeAsF|Taichi Terashima,Hishiro T. Hirose,Yoshitaka Matsushita,Shinya Uji,Hiroaki Ikeda,Yuki Fuseya,Teng Wang,Gang Mu###
(1774802, 1774802)
 Counterintuitively, the interlayer resistivity was larger in thelongitudinal configuration (B parallel I parallel c) than in the transverseone (B perp I parallel c).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 4, 'K', 2],[98.0, 14, 'T', 2]

I
###In-plane electronic anisotropy revealed by interlayer resistivity measurements on the iron-based superconductor parent compound CaFeAsF|Taichi Terashima,Hishiro T. Hirose,Yoshitaka Matsushita,Shinya Uji,Hiroaki Ikeda,Yuki Fuseya,Teng Wang,Gang Mu###
(1774806, 1774806)
 Counterintuitively, the interlayer resistivity was larger in thelongitudinal configuration (B parallel I parallel c) than in the transverseone (B perp I parallel c).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 4, 'K', 2],[94.0, 14, 'T', 2]

B
###In-plane electronic anisotropy revealed by interlayer resistivity measurements on the iron-based superconductor parent compound CaFeAsF|Taichi Terashima,Hishiro T. Hirose,Yoshitaka Matsushita,Shinya Uji,Hiroaki Ikeda,Yuki Fuseya,Teng Wang,Gang Mu###
(1774825, 1774825)
 Counterintuitively, the interlayer resistivity was larger in thelongitudinal configuration (B parallel I parallel c) than in the transverseone (B perp I parallel c).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 4, 'K', 2],[75.0, 14, 'T', 2]

I
###In-plane electronic anisotropy revealed by interlayer resistivity measurements on the iron-based superconductor parent compound CaFeAsF|Taichi Terashima,Hishiro T. Hirose,Yoshitaka Matsushita,Shinya Uji,Hiroaki Ikeda,Yuki Fuseya,Teng Wang,Gang Mu###
(1774829, 1774829)
 Counterintuitively, the interlayer resistivity was larger in thelongitudinal configuration (B parallel I parallel c) than in the transverseone (B perp I parallel c).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 4, 'K', 2],[71.0, 14, 'T', 2]

At
###In-plane electronic anisotropy revealed by interlayer resistivity measurements on the iron-based superconductor parent compound CaFeAsF|Taichi Terashima,Hishiro T. Hirose,Yoshitaka Matsushita,Shinya Uji,Hiroaki Ikeda,Yuki Fuseya,Teng Wang,Gang Mu###
(1774890, 1774890)
 At T<missing VAR>  4 K and B  14 T, themagnetoresistance Deltarho/rho0 was seven times larger in the Bparallel bo than in the B parallel ao<missing VAR> configuration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 4, 'K', 0],[10.0, 14, 'T', 0]

B
###In-plane electronic anisotropy revealed by interlayer resistivity measurements on the iron-based superconductor parent compound CaFeAsF|Taichi Terashima,Hishiro T. Hirose,Yoshitaka Matsushita,Shinya Uji,Hiroaki Ikeda,Yuki Fuseya,Teng Wang,Gang Mu###
(1774898, 1774898)
 At T<missing VAR>  4 K and B  14 T, themagnetoresistance Deltarho/rho0 was seven times larger in the Bparallel bo than in the B parallel ao<missing VAR> configuration.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 4, 'K', 0],[2.0, 14, 'T', 0]

B
###In-plane electronic anisotropy revealed by interlayer resistivity measurements on the iron-based superconductor parent compound CaFeAsF|Taichi Terashima,Hishiro T. Hirose,Yoshitaka Matsushita,Shinya Uji,Hiroaki Ikeda,Yuki Fuseya,Teng Wang,Gang Mu###
(1774926, 1774926)
 At T<missing VAR>  4 K and B  14 T, themagnetoresistance Deltarho/rho0 was seven times larger in the Bparallel bo than in the B parallel ao<missing VAR> configuration.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 4, 'K', 0],[26.0, 14, 'T', 0]

B
###In-plane electronic anisotropy revealed by interlayer resistivity measurements on the iron-based superconductor parent compound CaFeAsF|Taichi Terashima,Hishiro T. Hirose,Yoshitaka Matsushita,Shinya Uji,Hiroaki Ikeda,Yuki Fuseya,Teng Wang,Gang Mu###
(1774940, 1774940)
 At T<missing VAR>  4 K and B  14 T, themagnetoresistance Deltarho/rho0 was seven times larger in the Bparallel bo than in the B parallel ao<missing VAR> configuration.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 4, 'K', 0],[40.0, 14, 'T', 0]

LaCo0.5Ni0.5O3
###Spin re-orientation induced anisotropic magnetoresistance switching in LaCo$_{0.5}$Ni$_{0.5}$O$_{3-δ}$ thin films|P. K. Sreejith,T. S. Suraj,Hari Babu Vasili,Suresh Sreya,Pierluigi Gargiani,K. Sethupathi,Oscar Cespedes,V. Sankaranarayanan,M. S. Ramachandra Rao###
(1775068, 1775074)
Spin re-orientation induced anisotropic magnetoresistance switching in LaCo0.5Ni0.5O3- thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[243.0, 50, 'K', 5]

LaCo0.5Ni0.5O3
###Spin re-orientation induced anisotropic magnetoresistance switching in LaCo$_{0.5}$Ni$_{0.5}$O$_{3-δ}$ thin films|P. K. Sreejith,T. S. Suraj,Hari Babu Vasili,Suresh Sreya,Pierluigi Gargiani,K. Sethupathi,Oscar Cespedes,V. Sankaranarayanan,M. S. Ramachandra Rao###
(1775222, 1775228)
 Here we reported the spin re-orientation inducedswitching of anisotropic magnetoresistance (AMR) and its tunability with strainin epitaxial LaCo0.5Ni0.5O3-delta thin films across theferromagnetic transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 50, 'K', 2]

Co
###Spin re-orientation induced anisotropic magnetoresistance switching in LaCo$_{0.5}$Ni$_{0.5}$O$_{3-δ}$ thin films|P. K. Sreejith,T. S. Suraj,Hari Babu Vasili,Suresh Sreya,Pierluigi Gargiani,K. Sethupathi,Oscar Cespedes,V. Sankaranarayanan,M. S. Ramachandra Rao###
(1775403, 1775403)
 X<missing VAR>-ray absorptionand X<missing VAR>-ray magnetic circular dichroism spectroscopy measurements over Co and NiL<missing VAR> edges revealed the Co spin state transition below the magnetic transitiontemperature leading to the AMR switching and also the presence of Ni2 andCo4 ions evidencing the charge transfer from Ni to Co ions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 50, 'K', 1]

Ni
###Spin re-orientation induced anisotropic magnetoresistance switching in LaCo$_{0.5}$Ni$_{0.5}$O$_{3-δ}$ thin films|P. K. Sreejith,T. S. Suraj,Hari Babu Vasili,Suresh Sreya,Pierluigi Gargiani,K. Sethupathi,Oscar Cespedes,V. Sankaranarayanan,M. S. Ramachandra Rao###
(1775407, 1775407)
 X<missing VAR>-ray absorptionand X<missing VAR>-ray magnetic circular dichroism spectroscopy measurements over Co and NiL<missing VAR> edges revealed the Co spin state transition below the magnetic transitiontemperature leading to the AMR switching and also the presence of Ni2 andCo4 ions evidencing the charge transfer from Ni to Co ions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 50, 'K', 1]

Co
###Spin re-orientation induced anisotropic magnetoresistance switching in LaCo$_{0.5}$Ni$_{0.5}$O$_{3-δ}$ thin films|P. K. Sreejith,T. S. Suraj,Hari Babu Vasili,Suresh Sreya,Pierluigi Gargiani,K. Sethupathi,Oscar Cespedes,V. Sankaranarayanan,M. S. Ramachandra Rao###
(1775418, 1775418)
 X<missing VAR>-ray absorptionand X<missing VAR>-ray magnetic circular dichroism spectroscopy measurements over Co and NiL<missing VAR> edges revealed the Co spin state transition below the magnetic transitiontemperature leading to the AMR switching and also the presence of Ni2 andCo4 ions evidencing the charge transfer from Ni to Co ions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 50, 'K', 1]

Ni2
###Spin re-orientation induced anisotropic magnetoresistance switching in LaCo$_{0.5}$Ni$_{0.5}$O$_{3-δ}$ thin films|P. K. Sreejith,T. S. Suraj,Hari Babu Vasili,Suresh Sreya,Pierluigi Gargiani,K. Sethupathi,Oscar Cespedes,V. Sankaranarayanan,M. S. Ramachandra Rao###
(1775459, 1775460)
 X<missing VAR>-ray absorptionand X<missing VAR>-ray magnetic circular dichroism spectroscopy measurements over Co and NiL<missing VAR> edges revealed the Co spin state transition below the magnetic transitiontemperature leading to the AMR switching and also the presence of Ni2 andCo4 ions evidencing the charge transfer from Ni to Co ions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 50, 'K', 1]

Co4
###Spin re-orientation induced anisotropic magnetoresistance switching in LaCo$_{0.5}$Ni$_{0.5}$O$_{3-δ}$ thin films|P. K. Sreejith,T. S. Suraj,Hari Babu Vasili,Suresh Sreya,Pierluigi Gargiani,K. Sethupathi,Oscar Cespedes,V. Sankaranarayanan,M. S. Ramachandra Rao###
(1775465, 1775466)
 X<missing VAR>-ray absorptionand X<missing VAR>-ray magnetic circular dichroism spectroscopy measurements over Co and NiL<missing VAR> edges revealed the Co spin state transition below the magnetic transitiontemperature leading to the AMR switching and also the presence of Ni2 andCo4 ions evidencing the charge transfer from Ni to Co ions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 50, 'K', 1]

Ni
###Spin re-orientation induced anisotropic magnetoresistance switching in LaCo$_{0.5}$Ni$_{0.5}$O$_{3-δ}$ thin films|P. K. Sreejith,T. S. Suraj,Hari Babu Vasili,Suresh Sreya,Pierluigi Gargiani,K. Sethupathi,Oscar Cespedes,V. Sankaranarayanan,M. S. Ramachandra Rao###
(1775480, 1775480)
 X<missing VAR>-ray absorptionand X<missing VAR>-ray magnetic circular dichroism spectroscopy measurements over Co and NiL<missing VAR> edges revealed the Co spin state transition below the magnetic transitiontemperature leading to the AMR switching and also the presence of Ni2 andCo4 ions evidencing the charge transfer from Ni to Co ions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 50, 'K', 1]

Co
###Spin re-orientation induced anisotropic magnetoresistance switching in LaCo$_{0.5}$Ni$_{0.5}$O$_{3-δ}$ thin films|P. K. Sreejith,T. S. Suraj,Hari Babu Vasili,Suresh Sreya,Pierluigi Gargiani,K. Sethupathi,Oscar Cespedes,V. Sankaranarayanan,M. S. Ramachandra Rao###
(1775484, 1775484)
 X<missing VAR>-ray absorptionand X<missing VAR>-ray magnetic circular dichroism spectroscopy measurements over Co and NiL<missing VAR> edges revealed the Co spin state transition below the magnetic transitiontemperature leading to the AMR switching and also the presence of Ni2 andCo4 ions evidencing the charge transfer from Ni to Co ions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 50, 'K', 1]

Ni
###Spin re-orientation induced anisotropic magnetoresistance switching in LaCo$_{0.5}$Ni$_{0.5}$O$_{3-δ}$ thin films|P. K. Sreejith,T. S. Suraj,Hari Babu Vasili,Suresh Sreya,Pierluigi Gargiani,K. Sethupathi,Oscar Cespedes,V. Sankaranarayanan,M. S. Ramachandra Rao###
(1775535, 1775535)
 Our workdemonstrated the tunability of magnetic interactions mediated electronictransport in cobaltate-nickelate thin films, which is relevant in understandingNi-Co interactions in oxides for their technological applications such as inAMR sensors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[218.0, 50, 'K', 2]

Co
###Spin re-orientation induced anisotropic magnetoresistance switching in LaCo$_{0.5}$Ni$_{0.5}$O$_{3-δ}$ thin films|P. K. Sreejith,T. S. Suraj,Hari Babu Vasili,Suresh Sreya,Pierluigi Gargiani,K. Sethupathi,Oscar Cespedes,V. Sankaranarayanan,M. S. Ramachandra Rao###
(1775537, 1775537)
 Our workdemonstrated the tunability of magnetic interactions mediated electronictransport in cobaltate-nickelate thin films, which is relevant in understandingNi-Co interactions in oxides for their technological applications such as inAMR sensors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[220.0, 50, 'K', 2]

RbV3Sb5
###Anomalous Hall effect and two-dimensional Fermi surfaces in the charge-density-wave state of kagome metal RbV$_3$Sb$_5$|Lingfei Wang,Wei Zhang,Zheyu Wang,Tsz Fung Poon,Wenyan Wang,Chun Wai Tsang,Jianyu Xie,Xuefeng Zhou,Yusheng Zhao,Shanmin Wang,Kwing To Lai,Swee K. Goh###
(1775609, 1775613)
Anomalous Hall effect and two-dimensional Fermi surfaces in the charge-density-wave state of kagome metal RbV3Sb5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5555555555555556,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[395.0, 56, '%', 8]

V3Sb5
###Anomalous Hall effect and two-dimensional Fermi surfaces in the charge-density-wave state of kagome metal RbV$_3$Sb$_5$|Lingfei Wang,Wei Zhang,Zheyu Wang,Tsz Fung Poon,Wenyan Wang,Chun Wai Tsang,Jianyu Xie,Xuefeng Zhou,Yusheng Zhao,Shanmin Wang,Kwing To Lai,Swee K. Goh###
(1775617, 1775620)
 AV3Sb5 (ACs, K, Rb) are recently discovered superconducting systems(T<missing VAR>rm c<missing VAR>sim0.9-2.5 K) in which the vanadium atoms adopt the kagomestructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.375,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.625,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[388.0, 56, '%', 7]

Cs
###Anomalous Hall effect and two-dimensional Fermi surfaces in the charge-density-wave state of kagome metal RbV$_3$Sb$_5$|Lingfei Wang,Wei Zhang,Zheyu Wang,Tsz Fung Poon,Wenyan Wang,Chun Wai Tsang,Jianyu Xie,Xuefeng Zhou,Yusheng Zhao,Shanmin Wang,Kwing To Lai,Swee K. Goh###
(1775624, 1775624)
 AV3Sb5 (ACs, K, Rb) are recently discovered superconducting systems(T<missing VAR>rm c<missing VAR>sim0.9-2.5 K) in which the vanadium atoms adopt the kagomestructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[384.0, 56, '%', 7]

K
###Anomalous Hall effect and two-dimensional Fermi surfaces in the charge-density-wave state of kagome metal RbV$_3$Sb$_5$|Lingfei Wang,Wei Zhang,Zheyu Wang,Tsz Fung Poon,Wenyan Wang,Chun Wai Tsang,Jianyu Xie,Xuefeng Zhou,Yusheng Zhao,Shanmin Wang,Kwing To Lai,Swee K. Goh###
(1775627, 1775627)
 AV3Sb5 (ACs, K, Rb) are recently discovered superconducting systems(T<missing VAR>rm c<missing VAR>sim0.9-2.5 K) in which the vanadium atoms adopt the kagomestructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[381.0, 56, '%', 7]

Rb
###Anomalous Hall effect and two-dimensional Fermi surfaces in the charge-density-wave state of kagome metal RbV$_3$Sb$_5$|Lingfei Wang,Wei Zhang,Zheyu Wang,Tsz Fung Poon,Wenyan Wang,Chun Wai Tsang,Jianyu Xie,Xuefeng Zhou,Yusheng Zhao,Shanmin Wang,Kwing To Lai,Swee K. Goh###
(1775630, 1775630)
 AV3Sb5 (ACs, K, Rb) are recently discovered superconducting systems(T<missing VAR>rm c<missing VAR>sim0.9-2.5 K) in which the vanadium atoms adopt the kagomestructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[378.0, 56, '%', 7]

K
###Anomalous Hall effect and two-dimensional Fermi surfaces in the charge-density-wave state of kagome metal RbV$_3$Sb$_5$|Lingfei Wang,Wei Zhang,Zheyu Wang,Tsz Fung Poon,Wenyan Wang,Chun Wai Tsang,Jianyu Xie,Xuefeng Zhou,Yusheng Zhao,Shanmin Wang,Kwing To Lai,Swee K. Goh###
(1775654, 1775654)
 AV3Sb5 (ACs, K, Rb) are recently discovered superconducting systems(T<missing VAR>rm c<missing VAR>sim0.9-2.5 K) in which the vanadium atoms adopt the kagomestructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[354.0, 56, '%', 7]

C
###Anomalous Hall effect and two-dimensional Fermi surfaces in the charge-density-wave state of kagome metal RbV$_3$Sb$_5$|Lingfei Wang,Wei Zhang,Zheyu Wang,Tsz Fung Poon,Wenyan Wang,Chun Wai Tsang,Jianyu Xie,Xuefeng Zhou,Yusheng Zhao,Shanmin Wang,Kwing To Lai,Swee K. Goh###
(1775695, 1775695)
 Intriguingly, these systems enter a charge-density-wave (CD<missing VAR>W) phase(T<missing VAR>rm CD<missing VAR>Wsim80-100 K), and further evidence shows that the time-reversalsymmetry is broken in the CD<missing VAR>W phase.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[313.0, 56, '%', 6]

W
###Anomalous Hall effect and two-dimensional Fermi surfaces in the charge-density-wave state of kagome metal RbV$_3$Sb$_5$|Lingfei Wang,Wei Zhang,Zheyu Wang,Tsz Fung Poon,Wenyan Wang,Chun Wai Tsang,Jianyu Xie,Xuefeng Zhou,Yusheng Zhao,Shanmin Wang,Kwing To Lai,Swee K. Goh###
(1775697, 1775697)
 Intriguingly, these systems enter a charge-density-wave (CD<missing VAR>W) phase(T<missing VAR>rm CD<missing VAR>Wsim80-100 K), and further evidence shows that the time-reversalsymmetry is broken in the CD<missing VAR>W phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[311.0, 56, '%', 6]

C
###Anomalous Hall effect and two-dimensional Fermi surfaces in the charge-density-wave state of kagome metal RbV$_3$Sb$_5$|Lingfei Wang,Wei Zhang,Zheyu Wang,Tsz Fung Poon,Wenyan Wang,Chun Wai Tsang,Jianyu Xie,Xuefeng Zhou,Yusheng Zhao,Shanmin Wang,Kwing To Lai,Swee K. Goh###
(1775707, 1775707)
 Intriguingly, these systems enter a charge-density-wave (CD<missing VAR>W) phase(T<missing VAR>rm CD<missing VAR>Wsim80-100 K), and further evidence shows that the time-reversalsymmetry is broken in the CD<missing VAR>W phase.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[301.0, 56, '%', 6]

W
###Anomalous Hall effect and two-dimensional Fermi surfaces in the charge-density-wave state of kagome metal RbV$_3$Sb$_5$|Lingfei Wang,Wei Zhang,Zheyu Wang,Tsz Fung Poon,Wenyan Wang,Chun Wai Tsang,Jianyu Xie,Xuefeng Zhou,Yusheng Zhao,Shanmin Wang,Kwing To Lai,Swee K. Goh###
(1775709, 1775709)
 Intriguingly, these systems enter a charge-density-wave (CD<missing VAR>W) phase(T<missing VAR>rm CD<missing VAR>Wsim80-100 K), and further evidence shows that the time-reversalsymmetry is broken in the CD<missing VAR>W phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[299.0, 56, '%', 6]

K
###Anomalous Hall effect and two-dimensional Fermi surfaces in the charge-density-wave state of kagome metal RbV$_3$Sb$_5$|Lingfei Wang,Wei Zhang,Zheyu Wang,Tsz Fung Poon,Wenyan Wang,Chun Wai Tsang,Jianyu Xie,Xuefeng Zhou,Yusheng Zhao,Shanmin Wang,Kwing To Lai,Swee K. Goh###
(1775715, 1775715)
 Intriguingly, these systems enter a charge-density-wave (CD<missing VAR>W) phase(T<missing VAR>rm CD<missing VAR>Wsim80-100 K), and further evidence shows that the time-reversalsymmetry is broken in the CD<missing VAR>W phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[293.0, 56, '%', 6]

C
###Anomalous Hall effect and two-dimensional Fermi surfaces in the charge-density-wave state of kagome metal RbV$_3$Sb$_5$|Lingfei Wang,Wei Zhang,Zheyu Wang,Tsz Fung Poon,Wenyan Wang,Chun Wai Tsang,Jianyu Xie,Xuefeng Zhou,Yusheng Zhao,Shanmin Wang,Kwing To Lai,Swee K. Goh###
(1775746, 1775746)
 Intriguingly, these systems enter a charge-density-wave (CD<missing VAR>W) phase(T<missing VAR>rm CD<missing VAR>Wsim80-100 K), and further evidence shows that the time-reversalsymmetry is broken in the CD<missing VAR>W phase.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[262.0, 56, '%', 6]

W
###Anomalous Hall effect and two-dimensional Fermi surfaces in the charge-density-wave state of kagome metal RbV$_3$Sb$_5$|Lingfei Wang,Wei Zhang,Zheyu Wang,Tsz Fung Poon,Wenyan Wang,Chun Wai Tsang,Jianyu Xie,Xuefeng Zhou,Yusheng Zhao,Shanmin Wang,Kwing To Lai,Swee K. Goh###
(1775748, 1775748)
 Intriguingly, these systems enter a charge-density-wave (CD<missing VAR>W) phase(T<missing VAR>rm CD<missing VAR>Wsim80-100 K), and further evidence shows that the time-reversalsymmetry is broken in the CD<missing VAR>W phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[260.0, 56, '%', 6]

KV3Sb5
###Anomalous Hall effect and two-dimensional Fermi surfaces in the charge-density-wave state of kagome metal RbV$_3$Sb$_5$|Lingfei Wang,Wei Zhang,Zheyu Wang,Tsz Fung Poon,Wenyan Wang,Chun Wai Tsang,Jianyu Xie,Xuefeng Zhou,Yusheng Zhao,Shanmin Wang,Kwing To Lai,Swee K. Goh###
(1775773, 1775777)
 Concurrently, the anomalous Hall effecthas been observed in KV3Sb5 and CsV3Sb5 inside the novel CD<missing VAR>W phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1111111111111111,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5555555555555556,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[231.0, 56, '%', 5]

CsV3Sb5
###Anomalous Hall effect and two-dimensional Fermi surfaces in the charge-density-wave state of kagome metal RbV$_3$Sb$_5$|Lingfei Wang,Wei Zhang,Zheyu Wang,Tsz Fung Poon,Wenyan Wang,Chun Wai Tsang,Jianyu Xie,Xuefeng Zhou,Yusheng Zhao,Shanmin Wang,Kwing To Lai,Swee K. Goh###
(1775781, 1775785)
 Concurrently, the anomalous Hall effecthas been observed in KV3Sb5 and CsV3Sb5 inside the novel CD<missing VAR>W phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5555555555555556,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[223.0, 56, '%', 5]

C
###Anomalous Hall effect and two-dimensional Fermi surfaces in the charge-density-wave state of kagome metal RbV$_3$Sb$_5$|Lingfei Wang,Wei Zhang,Zheyu Wang,Tsz Fung Poon,Wenyan Wang,Chun Wai Tsang,Jianyu Xie,Xuefeng Zhou,Yusheng Zhao,Shanmin Wang,Kwing To Lai,Swee K. Goh###
(1775793, 1775793)
 Concurrently, the anomalous Hall effecthas been observed in KV3Sb5 and CsV3Sb5 inside the novel CD<missing VAR>W phase.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[215.0, 56, '%', 5]

W
###Anomalous Hall effect and two-dimensional Fermi surfaces in the charge-density-wave state of kagome metal RbV$_3$Sb$_5$|Lingfei Wang,Wei Zhang,Zheyu Wang,Tsz Fung Poon,Wenyan Wang,Chun Wai Tsang,Jianyu Xie,Xuefeng Zhou,Yusheng Zhao,Shanmin Wang,Kwing To Lai,Swee K. Goh###
(1775795, 1775795)
 Concurrently, the anomalous Hall effecthas been observed in KV3Sb5 and CsV3Sb5 inside the novel CD<missing VAR>W phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[213.0, 56, '%', 5]

RbV3Sb5
###Anomalous Hall effect and two-dimensional Fermi surfaces in the charge-density-wave state of kagome metal RbV$_3$Sb$_5$|Lingfei Wang,Wei Zhang,Zheyu Wang,Tsz Fung Poon,Wenyan Wang,Chun Wai Tsang,Jianyu Xie,Xuefeng Zhou,Yusheng Zhao,Shanmin Wang,Kwing To Lai,Swee K. Goh###
(1775822, 1775826)
Here, we report a comprehensive study of a high-quality RbV3Sb5 singlecrystal with magnetotransport measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5555555555555556,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[182.0, 56, '%', 4]

RbV3Sb5
###Anomalous Hall effect and two-dimensional Fermi surfaces in the charge-density-wave state of kagome metal RbV$_3$Sb$_5$|Lingfei Wang,Wei Zhang,Zheyu Wang,Tsz Fung Poon,Wenyan Wang,Chun Wai Tsang,Jianyu Xie,Xuefeng Zhou,Yusheng Zhao,Shanmin Wang,Kwing To Lai,Swee K. Goh###
(1775861, 1775865)
 Our data demonstrate the emergenceof anomalous Hall effect in RbV3Sb5 when the charge-density-wave statedevelops.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5555555555555556,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 56, '%', 3]

KV3Sb5
###Anomalous Hall effect and two-dimensional Fermi surfaces in the charge-density-wave state of kagome metal RbV$_3$Sb$_5$|Lingfei Wang,Wei Zhang,Zheyu Wang,Tsz Fung Poon,Wenyan Wang,Chun Wai Tsang,Jianyu Xie,Xuefeng Zhou,Yusheng Zhao,Shanmin Wang,Kwing To Lai,Swee K. Goh###
(1775920, 1775924)
 The magnitude of anomalous Hall resistivity at the low temperaturelimit is comparable to the reported values in KV3Sb5 and CsV3Sb5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1111111111111111,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5555555555555556,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 56, '%', 2]

CsV3Sb5
###Anomalous Hall effect and two-dimensional Fermi surfaces in the charge-density-wave state of kagome metal RbV$_3$Sb$_5$|Lingfei Wang,Wei Zhang,Zheyu Wang,Tsz Fung Poon,Wenyan Wang,Chun Wai Tsang,Jianyu Xie,Xuefeng Zhou,Yusheng Zhao,Shanmin Wang,Kwing To Lai,Swee K. Goh###
(1775928, 1775932)
 The magnitude of anomalous Hall resistivity at the low temperaturelimit is comparable to the reported values in KV3Sb5 and CsV3Sb5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5555555555555556,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 56, '%', 2]

In
###Anomalous Hall effect and two-dimensional Fermi surfaces in the charge-density-wave state of kagome metal RbV$_3$Sb$_5$|Lingfei Wang,Wei Zhang,Zheyu Wang,Tsz Fung Poon,Wenyan Wang,Chun Wai Tsang,Jianyu Xie,Xuefeng Zhou,Yusheng Zhao,Shanmin Wang,Kwing To Lai,Swee K. Goh###
(1775979, 1775979)
 Inparticular, a large quantum oscillation frequency (2235 T), which occupiessim56% of the Brillouin zone area, has been recorded.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 56, '%', 0]

RbV3Sb5
###Anomalous Hall effect and two-dimensional Fermi surfaces in the charge-density-wave state of kagome metal RbV$_3$Sb$_5$|Lingfei Wang,Wei Zhang,Zheyu Wang,Tsz Fung Poon,Wenyan Wang,Chun Wai Tsang,Jianyu Xie,Xuefeng Zhou,Yusheng Zhao,Shanmin Wang,Kwing To Lai,Swee K. Goh###
(1776087, 1776091)
 For the quantumoscillation frequencies with sufficient signal-to-noise ratio, we furtherperform field-angle dependent measurements and our data indicatetwo-dimensional Fermi surfaces in RbV3Sb5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5555555555555556,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 56, '%', 1]

V3Sb5
###Anomalous Hall effect and two-dimensional Fermi surfaces in the charge-density-wave state of kagome metal RbV$_3$Sb$_5$|Lingfei Wang,Wei Zhang,Zheyu Wang,Tsz Fung Poon,Wenyan Wang,Chun Wai Tsang,Jianyu Xie,Xuefeng Zhou,Yusheng Zhao,Shanmin Wang,Kwing To Lai,Swee K. Goh###
(1776131, 1776134)
 Our results provideindispensable information for understanding the anomalous Hall effect and bandstructure in kagome metals AV3Sb5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.375,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.625,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 56, '%', 2]

Nd0.8Sr0.2NiO2
###Rotational symmetry breaking in superconducting nickelate Nd0.8Sr0.2NiO2 films|Haoran Ji,Yanan Li,Yi Liu,Xiang Ding,Zheyuan Xie,Shichao Qi,Liang Qiao,Yi-feng Yang,Guang-Ming Zhang,Jian Wang###
(1776157, 1776163)
Rotational symmetry breaking in superconducting nickelate Nd0.8Sr0.2NiO2 films.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.05,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###Rotational symmetry breaking in superconducting nickelate Nd0.8Sr0.2NiO2 films|Haoran Ji,Yanan Li,Yi Liu,Xiang Ding,Zheyuan Xie,Shichao Qi,Liang Qiao,Yi-feng Yang,Guang-Ming Zhang,Jian Wang###
(1776185, 1776185)
 The infinite-layer nickelates, isostructural to the high-Tc superconductorcuprates, have risen as a promising platform to host unconventionalsuperconductivity and stimulated growing interests in the condensed mattercommunity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nd0.8Sr0.2NiO2
###Rotational symmetry breaking in superconducting nickelate Nd0.8Sr0.2NiO2 films|Haoran Ji,Yanan Li,Yi Liu,Xiang Ding,Zheyuan Xie,Shichao Qi,Liang Qiao,Yi-feng Yang,Guang-Ming Zhang,Jian Wang###
(1776391, 1776397)
 Here, we study the angulardependence of the transport properties on the infinite-layer nickelateNd0.8Sr0.2NiO2 superconducting films with Corbino-disk configuration.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.05,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(C4)
###Rotational symmetry breaking in superconducting nickelate Nd0.8Sr0.2NiO2 films|Haoran Ji,Yanan Li,Yi Liu,Xiang Ding,Zheyuan Xie,Shichao Qi,Liang Qiao,Yi-feng Yang,Guang-Ming Zhang,Jian Wang###
(1776455, 1776458)
 Theazimuthal angular dependence of the magnetoresistance (R<missing VAR>(phi)) manifests therotational symmetry breaking from isotropy to four-fold (C4) anisotropy withincreasing magnetic field, revealing a symmetry breaking phase transition.
Featurization successful!
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(C2)
###Rotational symmetry breaking in superconducting nickelate Nd0.8Sr0.2NiO2 films|Haoran Ji,Yanan Li,Yi Liu,Xiang Ding,Zheyuan Xie,Shichao Qi,Liang Qiao,Yi-feng Yang,Guang-Ming Zhang,Jian Wang###
(1776514, 1776517)
Approaching the low temperature and large magnetic field regime, an additionaltwo-fold (C2) symmetric component in the R<missing VAR>(phi) curves and an anomalousupturn of the temperature-dependent critical field are observed simultaneously,suggesting the emergence of an exotic electronic phase.
Featurization successful!
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Se
###Weak antilocalization induced by Se substitution in layered BiCh$_2$-based (Ch = S, Se) superconductors LaO$_{1-x}$F$_x$BiS$_{2-y}$Se$_y$|Kazuhisa Hoshi,Hiroto Arima,Noriyuki Kataoka,Masayuki Ochi,Aichi Yamashita,Anne de Visser,Takayoshi Yokoya,Kazuhiko Kuroki,Yoshikazu Mizuguchi###
(1776652, 1776652)
Weak antilocalization induced by Se substitution in layered BiCh2-based (Ch  S, Se) superconductors LaO1-xFx<missing VAR>BiS2-ySey<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 0.2, ',', 1],[93.0, 0.5, ',', 1],[310.0, 0.2, 'samples', 6]

Bi
###Weak antilocalization induced by Se substitution in layered BiCh$_2$-based (Ch = S, Se) superconductors LaO$_{1-x}$F$_x$BiS$_{2-y}$Se$_y$|Kazuhisa Hoshi,Hiroto Arima,Noriyuki Kataoka,Masayuki Ochi,Aichi Yamashita,Anne de Visser,Takayoshi Yokoya,Kazuhiko Kuroki,Yoshikazu Mizuguchi###
(1776660, 1776660)
Weak antilocalization induced by Se substitution in layered BiCh2-based (Ch  S, Se) superconductors LaO1-xFx<missing VAR>BiS2-ySey<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 0.2, ',', 1],[85.0, 0.5, ',', 1],[302.0, 0.2, 'samples', 6]

S
###Weak antilocalization induced by Se substitution in layered BiCh$_2$-based (Ch = S, Se) superconductors LaO$_{1-x}$F$_x$BiS$_{2-y}$Se$_y$|Kazuhisa Hoshi,Hiroto Arima,Noriyuki Kataoka,Masayuki Ochi,Aichi Yamashita,Anne de Visser,Takayoshi Yokoya,Kazuhiko Kuroki,Yoshikazu Mizuguchi###
(1776670, 1776670)
Weak antilocalization induced by Se substitution in layered BiCh2-based (Ch  S, Se) superconductors LaO1-xFx<missing VAR>BiS2-ySey<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 0.2, ',', 1],[75.0, 0.5, ',', 1],[292.0, 0.2, 'samples', 6]

Se
###Weak antilocalization induced by Se substitution in layered BiCh$_2$-based (Ch = S, Se) superconductors LaO$_{1-x}$F$_x$BiS$_{2-y}$Se$_y$|Kazuhisa Hoshi,Hiroto Arima,Noriyuki Kataoka,Masayuki Ochi,Aichi Yamashita,Anne de Visser,Takayoshi Yokoya,Kazuhiko Kuroki,Yoshikazu Mizuguchi###
(1776673, 1776673)
Weak antilocalization induced by Se substitution in layered BiCh2-based (Ch  S, Se) superconductors LaO1-xFx<missing VAR>BiS2-ySey<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 0.2, ',', 1],[72.0, 0.5, ',', 1],[289.0, 0.2, 'samples', 6]

LaO1-xF
###Weak antilocalization induced by Se substitution in layered BiCh$_2$-based (Ch = S, Se) superconductors LaO$_{1-x}$F$_x$BiS$_{2-y}$Se$_y$|Kazuhisa Hoshi,Hiroto Arima,Noriyuki Kataoka,Masayuki Ochi,Aichi Yamashita,Anne de Visser,Takayoshi Yokoya,Kazuhiko Kuroki,Yoshikazu Mizuguchi###
(1776678, 1776683)
Weak antilocalization induced by Se substitution in layered BiCh2-based (Ch  S, Se) superconductors LaO1-xFx<missing VAR>BiS2-ySey<missing VAR>.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[59.0, 0.2, ',', 1],[62.0, 0.5, ',', 1],[279.0, 0.2, 'samples', 6]

BiS2-ySe
###Weak antilocalization induced by Se substitution in layered BiCh$_2$-based (Ch = S, Se) superconductors LaO$_{1-x}$F$_x$BiS$_{2-y}$Se$_y$|Kazuhisa Hoshi,Hiroto Arima,Noriyuki Kataoka,Masayuki Ochi,Aichi Yamashita,Anne de Visser,Takayoshi Yokoya,Kazuhiko Kuroki,Yoshikazu Mizuguchi###
(1776685, 1776690)
Weak antilocalization induced by Se substitution in layered BiCh2-based (Ch  S, Se) superconductors LaO1-xFx<missing VAR>BiS2-ySey<missing VAR>.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[52.0, 0.2, ',', 1],[55.0, 0.5, ',', 1],[272.0, 0.2, 'samples', 6]

Bi
###Weak antilocalization induced by Se substitution in layered BiCh$_2$-based (Ch = S, Se) superconductors LaO$_{1-x}$F$_x$BiS$_{2-y}$Se$_y$|Kazuhisa Hoshi,Hiroto Arima,Noriyuki Kataoka,Masayuki Ochi,Aichi Yamashita,Anne de Visser,Takayoshi Yokoya,Kazuhiko Kuroki,Yoshikazu Mizuguchi###
(1776706, 1776706)
 We report transport properties for layered BiCh2-based (Ch  S, Se)superconductors LaO1-xFxBiS2-ySey (x<missing VAR>  0.2, 0.5, y<missing VAR>  0-1.05) and theobservation of weak antilocalization (WAL).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 0.2, ',', 0],[39.0, 0.5, ',', 0],[256.0, 0.2, 'samples', 5]

S
###Weak antilocalization induced by Se substitution in layered BiCh$_2$-based (Ch = S, Se) superconductors LaO$_{1-x}$F$_x$BiS$_{2-y}$Se$_y$|Kazuhisa Hoshi,Hiroto Arima,Noriyuki Kataoka,Masayuki Ochi,Aichi Yamashita,Anne de Visser,Takayoshi Yokoya,Kazuhiko Kuroki,Yoshikazu Mizuguchi###
(1776716, 1776716)
 We report transport properties for layered BiCh2-based (Ch  S, Se)superconductors LaO1-xFxBiS2-ySey (x<missing VAR>  0.2, 0.5, y<missing VAR>  0-1.05) and theobservation of weak antilocalization (WAL).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 0.2, ',', 0],[29.0, 0.5, ',', 0],[246.0, 0.2, 'samples', 5]

Se
###Weak antilocalization induced by Se substitution in layered BiCh$_2$-based (Ch = S, Se) superconductors LaO$_{1-x}$F$_x$BiS$_{2-y}$Se$_y$|Kazuhisa Hoshi,Hiroto Arima,Noriyuki Kataoka,Masayuki Ochi,Aichi Yamashita,Anne de Visser,Takayoshi Yokoya,Kazuhiko Kuroki,Yoshikazu Mizuguchi###
(1776719, 1776719)
 We report transport properties for layered BiCh2-based (Ch  S, Se)superconductors LaO1-xFxBiS2-ySey (x<missing VAR>  0.2, 0.5, y<missing VAR>  0-1.05) and theobservation of weak antilocalization (WAL).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 0.2, ',', 0],[26.0, 0.5, ',', 0],[243.0, 0.2, 'samples', 5]

LaO1-x
###Weak antilocalization induced by Se substitution in layered BiCh$_2$-based (Ch = S, Se) superconductors LaO$_{1-x}$F$_x$BiS$_{2-y}$Se$_y$|Kazuhisa Hoshi,Hiroto Arima,Noriyuki Kataoka,Masayuki Ochi,Aichi Yamashita,Anne de Visser,Takayoshi Yokoya,Kazuhiko Kuroki,Yoshikazu Mizuguchi###
(1776725, 1776729)
 We report transport properties for layered BiCh2-based (Ch  S, Se)superconductors LaO1-xFxBiS2-ySey (x<missing VAR>  0.2, 0.5, y<missing VAR>  0-1.05) and theobservation of weak antilocalization (WAL).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[13.0, 0.2, ',', 0],[16.0, 0.5, ',', 0],[233.0, 0.2, 'samples', 5]

BiS2-y
###Weak antilocalization induced by Se substitution in layered BiCh$_2$-based (Ch = S, Se) superconductors LaO$_{1-x}$F$_x$BiS$_{2-y}$Se$_y$|Kazuhisa Hoshi,Hiroto Arima,Noriyuki Kataoka,Masayuki Ochi,Aichi Yamashita,Anne de Visser,Takayoshi Yokoya,Kazuhiko Kuroki,Yoshikazu Mizuguchi###
(1776731, 1776735)
 We report transport properties for layered BiCh2-based (Ch  S, Se)superconductors LaO1-xFxBiS2-ySey (x<missing VAR>  0.2, 0.5, y<missing VAR>  0-1.05) and theobservation of weak antilocalization (WAL).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[7.0, 0.2, ',', 0],[10.0, 0.5, ',', 0],[227.0, 0.2, 'samples', 5]

W
###Weak antilocalization induced by Se substitution in layered BiCh$_2$-based (Ch = S, Se) superconductors LaO$_{1-x}$F$_x$BiS$_{2-y}$Se$_y$|Kazuhisa Hoshi,Hiroto Arima,Noriyuki Kataoka,Masayuki Ochi,Aichi Yamashita,Anne de Visser,Takayoshi Yokoya,Kazuhiko Kuroki,Yoshikazu Mizuguchi###
(1776770, 1776770)
 We report transport properties for layered BiCh2-based (Ch  S, Se)superconductors LaO1-xFxBiS2-ySey (x<missing VAR>  0.2, 0.5, y<missing VAR>  0-1.05) and theobservation of weak antilocalization (WAL).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 0.2, ',', 0],[25.0, 0.5, ',', 0],[192.0, 0.2, 'samples', 5]

Se
###Weak antilocalization induced by Se substitution in layered BiCh$_2$-based (Ch = S, Se) superconductors LaO$_{1-x}$F$_x$BiS$_{2-y}$Se$_y$|Kazuhisa Hoshi,Hiroto Arima,Noriyuki Kataoka,Masayuki Ochi,Aichi Yamashita,Anne de Visser,Takayoshi Yokoya,Kazuhiko Kuroki,Yoshikazu Mizuguchi###
(1776791, 1776791)
 Electrical resistivity and Hallcoefficients for the Se-poor samples increase with decreasing temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 0.2, ',', 1],[46.0, 0.5, ',', 1],[171.0, 0.2, 'samples', 4]

Se
###Weak antilocalization induced by Se substitution in layered BiCh$_2$-based (Ch = S, Se) superconductors LaO$_{1-x}$F$_x$BiS$_{2-y}$Se$_y$|Kazuhisa Hoshi,Hiroto Arima,Noriyuki Kataoka,Masayuki Ochi,Aichi Yamashita,Anne de Visser,Takayoshi Yokoya,Kazuhiko Kuroki,Yoshikazu Mizuguchi###
(1776821, 1776821)
 Theincrease becomes less pronounced with increasing Se concentration indicating aloss of insulating behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 0.2, ',', 2],[76.0, 0.5, ',', 2],[141.0, 0.2, 'samples', 3]

Se
###Weak antilocalization induced by Se substitution in layered BiCh$_2$-based (Ch = S, Se) superconductors LaO$_{1-x}$F$_x$BiS$_{2-y}$Se$_y$|Kazuhisa Hoshi,Hiroto Arima,Noriyuki Kataoka,Masayuki Ochi,Aichi Yamashita,Anne de Visser,Takayoshi Yokoya,Kazuhiko Kuroki,Yoshikazu Mizuguchi###
(1776846, 1776846)
 Interestingly, the moderately Se-substitutedsamples exhibit metallic behavior in the high-temperature region and a weakincrease in the resistivity in the low-temperature regions, which indicates theexistence of carrier localization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 0.2, ',', 3],[101.0, 0.5, ',', 3],[116.0, 0.2, 'samples', 2]

Se
###Weak antilocalization induced by Se substitution in layered BiCh$_2$-based (Ch = S, Se) superconductors LaO$_{1-x}$F$_x$BiS$_{2-y}$Se$_y$|Kazuhisa Hoshi,Hiroto Arima,Noriyuki Kataoka,Masayuki Ochi,Aichi Yamashita,Anne de Visser,Takayoshi Yokoya,Kazuhiko Kuroki,Yoshikazu Mizuguchi###
(1776915, 1776915)
 The heavily Se-substituted compounds showmetallic behavior in the entire-temperature region.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 0.2, ',', 4],[170.0, 0.5, ',', 4],[47.0, 0.2, 'samples', 1]

C
###Weak antilocalization induced by Se substitution in layered BiCh$_2$-based (Ch = S, Se) superconductors LaO$_{1-x}$F$_x$BiS$_{2-y}$Se$_y$|Kazuhisa Hoshi,Hiroto Arima,Noriyuki Kataoka,Masayuki Ochi,Aichi Yamashita,Anne de Visser,Takayoshi Yokoya,Kazuhiko Kuroki,Yoshikazu Mizuguchi###
(1776985, 1776985)
 Sign changes of the Hallcoefficients are observed for the x<missing VAR>  0.2 samples, which possibly is related toa charge-density wave (CD<missing VAR>W).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[243.0, 0.2, ',', 5],[240.0, 0.5, ',', 5],[23.0, 0.2, 'samples', 0]

W
###Weak antilocalization induced by Se substitution in layered BiCh$_2$-based (Ch = S, Se) superconductors LaO$_{1-x}$F$_x$BiS$_{2-y}$Se$_y$|Kazuhisa Hoshi,Hiroto Arima,Noriyuki Kataoka,Masayuki Ochi,Aichi Yamashita,Anne de Visser,Takayoshi Yokoya,Kazuhiko Kuroki,Yoshikazu Mizuguchi###
(1776987, 1776987)
 Sign changes of the Hallcoefficients are observed for the x<missing VAR>  0.2 samples, which possibly is related toa charge-density wave (CD<missing VAR>W).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[245.0, 0.2, ',', 5],[242.0, 0.5, ',', 5],[25.0, 0.2, 'samples', 0]

W
###Weak antilocalization induced by Se substitution in layered BiCh$_2$-based (Ch = S, Se) superconductors LaO$_{1-x}$F$_x$BiS$_{2-y}$Se$_y$|Kazuhisa Hoshi,Hiroto Arima,Noriyuki Kataoka,Masayuki Ochi,Aichi Yamashita,Anne de Visser,Takayoshi Yokoya,Kazuhiko Kuroki,Yoshikazu Mizuguchi###
(1776999, 1776999)
 Magnetoresistance measurements indicate that WAL<missing VAR>is realized in the heavily Se-substituted systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[257.0, 0.2, ',', 6],[254.0, 0.5, ',', 6],[37.0, 0.2, 'samples', 1]

Se
###Weak antilocalization induced by Se substitution in layered BiCh$_2$-based (Ch = S, Se) superconductors LaO$_{1-x}$F$_x$BiS$_{2-y}$Se$_y$|Kazuhisa Hoshi,Hiroto Arima,Noriyuki Kataoka,Masayuki Ochi,Aichi Yamashita,Anne de Visser,Takayoshi Yokoya,Kazuhiko Kuroki,Yoshikazu Mizuguchi###
(1777014, 1777014)
 Magnetoresistance measurements indicate that WAL<missing VAR>is realized in the heavily Se-substituted systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[272.0, 0.2, ',', 6],[269.0, 0.5, ',', 6],[52.0, 0.2, 'samples', 1]

W
###Weak antilocalization induced by Se substitution in layered BiCh$_2$-based (Ch = S, Se) superconductors LaO$_{1-x}$F$_x$BiS$_{2-y}$Se$_y$|Kazuhisa Hoshi,Hiroto Arima,Noriyuki Kataoka,Masayuki Ochi,Aichi Yamashita,Anne de Visser,Takayoshi Yokoya,Kazuhiko Kuroki,Yoshikazu Mizuguchi###
(1777023, 1777023)
 The WAL<missing VAR> behavior is weakenedby the changes in F and Se concentrations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[281.0, 0.2, ',', 7],[278.0, 0.5, ',', 7],[61.0, 0.2, 'samples', 2]

F
###Weak antilocalization induced by Se substitution in layered BiCh$_2$-based (Ch = S, Se) superconductors LaO$_{1-x}$F$_x$BiS$_{2-y}$Se$_y$|Kazuhisa Hoshi,Hiroto Arima,Noriyuki Kataoka,Masayuki Ochi,Aichi Yamashita,Anne de Visser,Takayoshi Yokoya,Kazuhiko Kuroki,Yoshikazu Mizuguchi###
(1777042, 1777042)
 The WAL<missing VAR> behavior is weakenedby the changes in F and Se concentrations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[300.0, 0.2, ',', 7],[297.0, 0.5, ',', 7],[80.0, 0.2, 'samples', 2]

Se
###Weak antilocalization induced by Se substitution in layered BiCh$_2$-based (Ch = S, Se) superconductors LaO$_{1-x}$F$_x$BiS$_{2-y}$Se$_y$|Kazuhisa Hoshi,Hiroto Arima,Noriyuki Kataoka,Masayuki Ochi,Aichi Yamashita,Anne de Visser,Takayoshi Yokoya,Kazuhiko Kuroki,Yoshikazu Mizuguchi###
(1777046, 1777046)
 The WAL<missing VAR> behavior is weakenedby the changes in F and Se concentrations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[304.0, 0.2, ',', 7],[301.0, 0.5, ',', 7],[84.0, 0.2, 'samples', 2]

W
###Weak antilocalization induced by Se substitution in layered BiCh$_2$-based (Ch = S, Se) superconductors LaO$_{1-x}$F$_x$BiS$_{2-y}$Se$_y$|Kazuhisa Hoshi,Hiroto Arima,Noriyuki Kataoka,Masayuki Ochi,Aichi Yamashita,Anne de Visser,Takayoshi Yokoya,Kazuhiko Kuroki,Yoshikazu Mizuguchi###
(1777061, 1777061)
 A crossover state of the WAL<missing VAR> and WL<missing VAR>emerges around the moderately F-doped and Se-free LaO0.8F0.2BiS2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[319.0, 0.2, ',', 8],[316.0, 0.5, ',', 8],[99.0, 0.2, 'samples', 3]

W
###Weak antilocalization induced by Se substitution in layered BiCh$_2$-based (Ch = S, Se) superconductors LaO$_{1-x}$F$_x$BiS$_{2-y}$Se$_y$|Kazuhisa Hoshi,Hiroto Arima,Noriyuki Kataoka,Masayuki Ochi,Aichi Yamashita,Anne de Visser,Takayoshi Yokoya,Kazuhiko Kuroki,Yoshikazu Mizuguchi###
(1777067, 1777067)
 A crossover state of the WAL<missing VAR> and WL<missing VAR>emerges around the moderately F-doped and Se-free LaO0.8F0.2BiS2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[325.0, 0.2, ',', 8],[322.0, 0.5, ',', 8],[105.0, 0.2, 'samples', 3]

F
###Weak antilocalization induced by Se substitution in layered BiCh$_2$-based (Ch = S, Se) superconductors LaO$_{1-x}$F$_x$BiS$_{2-y}$Se$_y$|Kazuhisa Hoshi,Hiroto Arima,Noriyuki Kataoka,Masayuki Ochi,Aichi Yamashita,Anne de Visser,Takayoshi Yokoya,Kazuhiko Kuroki,Yoshikazu Mizuguchi###
(1777079, 1777079)
 A crossover state of the WAL<missing VAR> and WL<missing VAR>emerges around the moderately F-doped and Se-free LaO0.8F0.2BiS2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[337.0, 0.2, ',', 8],[334.0, 0.5, ',', 8],[117.0, 0.2, 'samples', 3]

Se
###Weak antilocalization induced by Se substitution in layered BiCh$_2$-based (Ch = S, Se) superconductors LaO$_{1-x}$F$_x$BiS$_{2-y}$Se$_y$|Kazuhisa Hoshi,Hiroto Arima,Noriyuki Kataoka,Masayuki Ochi,Aichi Yamashita,Anne de Visser,Takayoshi Yokoya,Kazuhiko Kuroki,Yoshikazu Mizuguchi###
(1777085, 1777085)
 A crossover state of the WAL<missing VAR> and WL<missing VAR>emerges around the moderately F-doped and Se-free LaO0.8F0.2BiS2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[343.0, 0.2, ',', 8],[340.0, 0.5, ',', 8],[123.0, 0.2, 'samples', 3]

LaO0.8F0.2BiS2
###Weak antilocalization induced by Se substitution in layered BiCh$_2$-based (Ch = S, Se) superconductors LaO$_{1-x}$F$_x$BiS$_{2-y}$Se$_y$|Kazuhisa Hoshi,Hiroto Arima,Noriyuki Kataoka,Masayuki Ochi,Aichi Yamashita,Anne de Visser,Takayoshi Yokoya,Kazuhiko Kuroki,Yoshikazu Mizuguchi###
(1777089, 1777096)
 A crossover state of the WAL<missing VAR> and WL<missing VAR>emerges around the moderately F-doped and Se-free LaO0.8F0.2BiS2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.16,0.04,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[347.0, 0.2, ',', 8],[344.0, 0.5, ',', 8],[127.0, 0.2, 'samples', 3]

F
###Weak antilocalization induced by Se substitution in layered BiCh$_2$-based (Ch = S, Se) superconductors LaO$_{1-x}$F$_x$BiS$_{2-y}$Se$_y$|Kazuhisa Hoshi,Hiroto Arima,Noriyuki Kataoka,Masayuki Ochi,Aichi Yamashita,Anne de Visser,Takayoshi Yokoya,Kazuhiko Kuroki,Yoshikazu Mizuguchi###
(1777116, 1777116)
 The change ofthe resistivity behavior by the F and Se substitution clearly correlates to thedifference of the magnetoconductance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[374.0, 0.2, ',', 9],[371.0, 0.5, ',', 9],[154.0, 0.2, 'samples', 4]

Se
###Weak antilocalization induced by Se substitution in layered BiCh$_2$-based (Ch = S, Se) superconductors LaO$_{1-x}$F$_x$BiS$_{2-y}$Se$_y$|Kazuhisa Hoshi,Hiroto Arima,Noriyuki Kataoka,Masayuki Ochi,Aichi Yamashita,Anne de Visser,Takayoshi Yokoya,Kazuhiko Kuroki,Yoshikazu Mizuguchi###
(1777120, 1777120)
 The change ofthe resistivity behavior by the F and Se substitution clearly correlates to thedifference of the magnetoconductance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[378.0, 0.2, ',', 9],[375.0, 0.5, ',', 9],[158.0, 0.2, 'samples', 4]

W
###Weak antilocalization induced by Se substitution in layered BiCh$_2$-based (Ch = S, Se) superconductors LaO$_{1-x}$F$_x$BiS$_{2-y}$Se$_y$|Kazuhisa Hoshi,Hiroto Arima,Noriyuki Kataoka,Masayuki Ochi,Aichi Yamashita,Anne de Visser,Takayoshi Yokoya,Kazuhiko Kuroki,Yoshikazu Mizuguchi###
(1777156, 1777156)
 Moreover, the localization regions of theWAL<missing VAR>-WL<missing VAR> crossover and weak WAL<missing VAR> states are possibly associated with the CD<missing VAR>W.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[414.0, 0.2, ',', 10],[411.0, 0.5, ',', 10],[194.0, 0.2, 'samples', 5]

W
###Weak antilocalization induced by Se substitution in layered BiCh$_2$-based (Ch = S, Se) superconductors LaO$_{1-x}$F$_x$BiS$_{2-y}$Se$_y$|Kazuhisa Hoshi,Hiroto Arima,Noriyuki Kataoka,Masayuki Ochi,Aichi Yamashita,Anne de Visser,Takayoshi Yokoya,Kazuhiko Kuroki,Yoshikazu Mizuguchi###
(1777160, 1777160)
 Moreover, the localization regions of theWAL<missing VAR>-WL<missing VAR> crossover and weak WAL<missing VAR> states are possibly associated with the CD<missing VAR>W.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[418.0, 0.2, ',', 10],[415.0, 0.5, ',', 10],[198.0, 0.2, 'samples', 5]

W
###Weak antilocalization induced by Se substitution in layered BiCh$_2$-based (Ch = S, Se) superconductors LaO$_{1-x}$F$_x$BiS$_{2-y}$Se$_y$|Kazuhisa Hoshi,Hiroto Arima,Noriyuki Kataoka,Masayuki Ochi,Aichi Yamashita,Anne de Visser,Takayoshi Yokoya,Kazuhiko Kuroki,Yoshikazu Mizuguchi###
(1777169, 1777169)
 Moreover, the localization regions of theWAL<missing VAR>-WL<missing VAR> crossover and weak WAL<missing VAR> states are possibly associated with the CD<missing VAR>W.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[427.0, 0.2, ',', 10],[424.0, 0.5, ',', 10],[207.0, 0.2, 'samples', 5]

C
###Weak antilocalization induced by Se substitution in layered BiCh$_2$-based (Ch = S, Se) superconductors LaO$_{1-x}$F$_x$BiS$_{2-y}$Se$_y$|Kazuhisa Hoshi,Hiroto Arima,Noriyuki Kataoka,Masayuki Ochi,Aichi Yamashita,Anne de Visser,Takayoshi Yokoya,Kazuhiko Kuroki,Yoshikazu Mizuguchi###
(1777185, 1777185)
 Moreover, the localization regions of theWAL<missing VAR>-WL<missing VAR> crossover and weak WAL<missing VAR> states are possibly associated with the CD<missing VAR>W.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[443.0, 0.2, ',', 10],[440.0, 0.5, ',', 10],[223.0, 0.2, 'samples', 5]

W
###Weak antilocalization induced by Se substitution in layered BiCh$_2$-based (Ch = S, Se) superconductors LaO$_{1-x}$F$_x$BiS$_{2-y}$Se$_y$|Kazuhisa Hoshi,Hiroto Arima,Noriyuki Kataoka,Masayuki Ochi,Aichi Yamashita,Anne de Visser,Takayoshi Yokoya,Kazuhiko Kuroki,Yoshikazu Mizuguchi###
(1777187, 1777187)
 Moreover, the localization regions of theWAL<missing VAR>-WL<missing VAR> crossover and weak WAL<missing VAR> states are possibly associated with the CD<missing VAR>W.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[445.0, 0.2, ',', 10],[442.0, 0.5, ',', 10],[225.0, 0.2, 'samples', 5]

Bi
###Weak antilocalization induced by Se substitution in layered BiCh$_2$-based (Ch = S, Se) superconductors LaO$_{1-x}$F$_x$BiS$_{2-y}$Se$_y$|Kazuhisa Hoshi,Hiroto Arima,Noriyuki Kataoka,Masayuki Ochi,Aichi Yamashita,Anne de Visser,Takayoshi Yokoya,Kazuhiko Kuroki,Yoshikazu Mizuguchi###
(1777199, 1777199)
 Wepropose that the BiCh2-based system is a good platform for studyingrelationship between WAL<missing VAR>, superconductivity, and electronic ordering becausethose states are tunable by element substitutions with bulk single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[457.0, 0.2, ',', 11],[454.0, 0.5, ',', 11],[237.0, 0.2, 'samples', 6]

W
###Weak antilocalization induced by Se substitution in layered BiCh$_2$-based (Ch = S, Se) superconductors LaO$_{1-x}$F$_x$BiS$_{2-y}$Se$_y$|Kazuhisa Hoshi,Hiroto Arima,Noriyuki Kataoka,Masayuki Ochi,Aichi Yamashita,Anne de Visser,Takayoshi Yokoya,Kazuhiko Kuroki,Yoshikazu Mizuguchi###
(1777224, 1777224)
 Wepropose that the BiCh2-based system is a good platform for studyingrelationship between WAL<missing VAR>, superconductivity, and electronic ordering becausethose states are tunable by element substitutions with bulk single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[482.0, 0.2, ',', 11],[479.0, 0.5, ',', 11],[262.0, 0.2, 'samples', 6]

W
###Electric field tunable multi-state tunnel magnetoresistances in 2D van der Waals magnetic heterojunctions|X. X. Ren,B. Liu,Xian Zhang,Ping Li,Zhi-Xin Guo###
(1777324, 1777324)
 Magnetic tunnel junction (MTJ) based on van der Waals (vdW) magnetic layershas been found to present excellent tunneling magnetoresistance (TMR) property,which has great potential applications in field sensing, non-volatile magneticrandom access memories, and spin logics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 2, 'D', 1],[263.0, 300, '%', 4],[288.0, 620, ',', 4],[290.0, 0, '%', 4]

W
###Electric field tunable multi-state tunnel magnetoresistances in 2D van der Waals magnetic heterojunctions|X. X. Ren,B. Liu,Xian Zhang,Ping Li,Zhi-Xin Guo###
(1777410, 1777410)
 Although MTJs composed of multilayervdW magnetic homojunction have been extensively investigated, the ones composedof vdW magnetic heterojunction is still to be explored.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 2, 'D', 2],[177.0, 300, '%', 3],[202.0, 620, ',', 3],[204.0, 0, '%', 3]

W
###Electric field tunable multi-state tunnel magnetoresistances in 2D van der Waals magnetic heterojunctions|X. X. Ren,B. Liu,Xian Zhang,Ping Li,Zhi-Xin Guo###
(1777435, 1777435)
 Although MTJs composed of multilayervdW magnetic homojunction have been extensively investigated, the ones composedof vdW magnetic heterojunction is still to be explored.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 2, 'D', 2],[152.0, 300, '%', 3],[177.0, 620, ',', 3],[179.0, 0, '%', 3]

In
###Electric field tunable multi-state tunnel magnetoresistances in 2D van der Waals magnetic heterojunctions|X. X. Ren,B. Liu,Xian Zhang,Ping Li,Zhi-Xin Guo###
(1777505, 1777505)
 In theMTJ composed of bilayer CrI3/bilayer Cr2Ge2Te6 heterojunction, we find thereare eight stable magnetic states, leading to six distinguishable electronicresistances.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[218.0, 2, 'D', 4],[82.0, 300, '%', 1],[107.0, 620, ',', 1],[109.0, 0, '%', 1]

CrI3
###Electric field tunable multi-state tunnel magnetoresistances in 2D van der Waals magnetic heterojunctions|X. X. Ren,B. Liu,Xian Zhang,Ping Li,Zhi-Xin Guo###
(1777520, 1777522)
 In theMTJ composed of bilayer CrI3/bilayer Cr2Ge2Te6 heterojunction, we find thereare eight stable magnetic states, leading to six distinguishable electronicresistances.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[233.0, 2, 'D', 4],[65.0, 300, '%', 1],[90.0, 620, ',', 1],[92.0, 0, '%', 1]

Cr2Ge2Te6
###Electric field tunable multi-state tunnel magnetoresistances in 2D van der Waals magnetic heterojunctions|X. X. Ren,B. Liu,Xian Zhang,Ping Li,Zhi-Xin Guo###
(1777526, 1777531)
 In theMTJ composed of bilayer CrI3/bilayer Cr2Ge2Te6 heterojunction, we find thereare eight stable magnetic states, leading to six distinguishable electronicresistances.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[239.0, 2, 'D', 4],[56.0, 300, '%', 1],[81.0, 620, ',', 1],[83.0, 0, '%', 1]

As
###Electric field tunable multi-state tunnel magnetoresistances in 2D van der Waals magnetic heterojunctions|X. X. Ren,B. Liu,Xian Zhang,Ping Li,Zhi-Xin Guo###
(1777568, 1777568)
 As a result, five sizable TMRs larger than 300% can be obtained(the maximum TMR is up to 620,000%).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[281.0, 2, 'D', 5],[19.0, 300, '%', 0],[44.0, 620, ',', 0],[46.0, 0, '%', 0]

W
###Electric field tunable multi-state tunnel magnetoresistances in 2D van der Waals magnetic heterojunctions|X. X. Ren,B. Liu,Xian Zhang,Ping Li,Zhi-Xin Guo###
(1777787, 1777787)
 This study opens an avenue to thedesign of high-performance MTJ devices based on vdW heterojunctions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[500.0, 2, 'D', 9],[200.0, 300, '%', 4],[175.0, 620, ',', 4],[173.0, 0, '%', 4]

Fe3GaTe2/MoS2/Fe3GaTe2
###Room-Temperature Spin-Valve Effect in Fe$_3$GaTe$_2$/MoS$_2$/Fe$_3$GaTe$_2$ 2D van der Waals Heterojunction Devices|Wen Jin,Gaojie Zhang,Hao Wu,Li Yang,Wenfeng Zhang,Haixin Chang###
(1777812, 1777826)
Room-Temperature Spin-Valve Effect in Fe3GaTe2/MoS2/Fe3GaTe2 2D van der Waals Heterojunction Devices.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[1.0, 2, 'D', 0],[123.0, 2, 'D', 3],[171.0, 2, 'D', 4],[214.0, 2, 'D', 5],[277.0, 15.89, '%', 6],[281.0, 2.3, 'K', 6],[285.0, 11.97, '%', 6],[290.0, 10, 'K', 6],[394.0, 0.31, '%', 8],[406.0, 300, 'K', 8],[419.0, 10, 'nA', 8],[453.0, 2, 'D', 9],[462.0, 2, 'D', 9]

W
###Room-Temperature Spin-Valve Effect in Fe$_3$GaTe$_2$/MoS$_2$/Fe$_3$GaTe$_2$ 2D van der Waals Heterojunction Devices|Wen Jin,Gaojie Zhang,Hao Wu,Li Yang,Wenfeng Zhang,Haixin Chang###
(1777902, 1777902)
 Two-dimensional (2D) van der Waals(vdW) materials are highly expected to build the spin-valve heterojunction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 2, 'D', 2],[47.0, 2, 'D', 1],[95.0, 2, 'D', 2],[138.0, 2, 'D', 3],[201.0, 15.89, '%', 4],[205.0, 2.3, 'K', 4],[209.0, 11.97, '%', 4],[214.0, 10, 'K', 4],[318.0, 0.31, '%', 6],[330.0, 300, 'K', 6],[343.0, 10, 'nA', 6],[377.0, 2, 'D', 7],[386.0, 2, 'D', 7]

C
###Room-Temperature Spin-Valve Effect in Fe$_3$GaTe$_2$/MoS$_2$/Fe$_3$GaTe$_2$ 2D van der Waals Heterojunction Devices|Wen Jin,Gaojie Zhang,Hao Wu,Li Yang,Wenfeng Zhang,Haixin Chang###
(1777938, 1777938)
However, the Curie temperatures (T<missing VAR>C) of the vdW ferromagnetic 2D crystals aremostly below room temperature (30-220 K).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 2, 'D', 3],[11.0, 2, 'D', 0],[59.0, 2, 'D', 1],[102.0, 2, 'D', 2],[165.0, 15.89, '%', 3],[169.0, 2.3, 'K', 3],[173.0, 11.97, '%', 3],[178.0, 10, 'K', 3],[282.0, 0.31, '%', 5],[294.0, 300, 'K', 5],[307.0, 10, 'nA', 5],[341.0, 2, 'D', 6],[350.0, 2, 'D', 6]

W
###Room-Temperature Spin-Valve Effect in Fe$_3$GaTe$_2$/MoS$_2$/Fe$_3$GaTe$_2$ 2D van der Waals Heterojunction Devices|Wen Jin,Gaojie Zhang,Hao Wu,Li Yang,Wenfeng Zhang,Haixin Chang###
(1777946, 1777946)
However, the Curie temperatures (T<missing VAR>C) of the vdW ferromagnetic 2D crystals aremostly below room temperature (30-220 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 2, 'D', 3],[3.0, 2, 'D', 0],[51.0, 2, 'D', 1],[94.0, 2, 'D', 2],[157.0, 15.89, '%', 3],[161.0, 2.3, 'K', 3],[165.0, 11.97, '%', 3],[170.0, 10, 'K', 3],[274.0, 0.31, '%', 5],[286.0, 300, 'K', 5],[299.0, 10, 'nA', 5],[333.0, 2, 'D', 6],[342.0, 2, 'D', 6]

K
###Room-Temperature Spin-Valve Effect in Fe$_3$GaTe$_2$/MoS$_2$/Fe$_3$GaTe$_2$ 2D van der Waals Heterojunction Devices|Wen Jin,Gaojie Zhang,Hao Wu,Li Yang,Wenfeng Zhang,Haixin Chang###
(1777969, 1777969)
However, the Curie temperatures (T<missing VAR>C) of the vdW ferromagnetic 2D crystals aremostly below room temperature (30-220 K).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 2, 'D', 3],[20.0, 2, 'D', 0],[28.0, 2, 'D', 1],[71.0, 2, 'D', 2],[134.0, 15.89, '%', 3],[138.0, 2.3, 'K', 3],[142.0, 11.97, '%', 3],[147.0, 10, 'K', 3],[251.0, 0.31, '%', 5],[263.0, 300, 'K', 5],[276.0, 10, 'nA', 5],[310.0, 2, 'D', 6],[319.0, 2, 'D', 6]

F
###Room-Temperature Spin-Valve Effect in Fe$_3$GaTe$_2$/MoS$_2$/Fe$_3$GaTe$_2$ 2D van der Waals Heterojunction Devices|Wen Jin,Gaojie Zhang,Hao Wu,Li Yang,Wenfeng Zhang,Haixin Chang###
(1777994, 1777994)
 It is very challenging to developroom temperature, ferromagnetic (FM) 2D crystals based spin-valve devices whichare still not available to date.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 2, 'D', 4],[45.0, 2, 'D', 1],[3.0, 2, 'D', 0],[46.0, 2, 'D', 1],[109.0, 15.89, '%', 2],[113.0, 2.3, 'K', 2],[117.0, 11.97, '%', 2],[122.0, 10, 'K', 2],[226.0, 0.31, '%', 4],[238.0, 300, 'K', 4],[251.0, 10, 'nA', 4],[285.0, 2, 'D', 5],[294.0, 2, 'D', 5]

F
###Room-Temperature Spin-Valve Effect in Fe$_3$GaTe$_2$/MoS$_2$/Fe$_3$GaTe$_2$ 2D van der Waals Heterojunction Devices|Wen Jin,Gaojie Zhang,Hao Wu,Li Yang,Wenfeng Zhang,Haixin Chang###
(1778038, 1778038)
 We report the first room temperature, FM<missing VAR> 2Dcrystal based all-2D<missing VAR> vdW Fe3GaTe2/MoS2/Fe3GaTe2 spin valve devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[211.0, 2, 'D', 5],[89.0, 2, 'D', 2],[41.0, 2, 'D', 1],[2.0, 2, 'D', 0],[65.0, 15.89, '%', 1],[69.0, 2.3, 'K', 1],[73.0, 11.97, '%', 1],[78.0, 10, 'K', 1],[182.0, 0.31, '%', 3],[194.0, 300, 'K', 3],[207.0, 10, 'nA', 3],[241.0, 2, 'D', 4],[250.0, 2, 'D', 4]

W
###Room-Temperature Spin-Valve Effect in Fe$_3$GaTe$_2$/MoS$_2$/Fe$_3$GaTe$_2$ 2D van der Waals Heterojunction Devices|Wen Jin,Gaojie Zhang,Hao Wu,Li Yang,Wenfeng Zhang,Haixin Chang###
(1778053, 1778053)
 We report the first room temperature, FM<missing VAR> 2Dcrystal based all-2D<missing VAR> vdW Fe3GaTe2/MoS2/Fe3GaTe2 spin valve devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[226.0, 2, 'D', 5],[104.0, 2, 'D', 2],[56.0, 2, 'D', 1],[13.0, 2, 'D', 0],[50.0, 15.89, '%', 1],[54.0, 2.3, 'K', 1],[58.0, 11.97, '%', 1],[63.0, 10, 'K', 1],[167.0, 0.31, '%', 3],[179.0, 300, 'K', 3],[192.0, 10, 'nA', 3],[226.0, 2, 'D', 4],[235.0, 2, 'D', 4]

Fe3GaTe2/MoS2/Fe3GaTe2
###Room-Temperature Spin-Valve Effect in Fe$_3$GaTe$_2$/MoS$_2$/Fe$_3$GaTe$_2$ 2D van der Waals Heterojunction Devices|Wen Jin,Gaojie Zhang,Hao Wu,Li Yang,Wenfeng Zhang,Haixin Chang###
(1778055, 1778069)
 We report the first room temperature, FM<missing VAR> 2Dcrystal based all-2D<missing VAR> vdW Fe3GaTe2/MoS2/Fe3GaTe2 spin valve devices.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[228.0, 2, 'D', 5],[106.0, 2, 'D', 2],[58.0, 2, 'D', 1],[15.0, 2, 'D', 0],[34.0, 15.89, '%', 1],[38.0, 2.3, 'K', 1],[42.0, 11.97, '%', 1],[47.0, 10, 'K', 1],[151.0, 0.31, '%', 3],[163.0, 300, 'K', 3],[176.0, 10, 'nA', 3],[210.0, 2, 'D', 4],[219.0, 2, 'D', 4]

Fe3GaTe2/MoS2/Fe3GaTe2
###Room-Temperature Spin-Valve Effect in Fe$_3$GaTe$_2$/MoS$_2$/Fe$_3$GaTe$_2$ 2D van der Waals Heterojunction Devices|Wen Jin,Gaojie Zhang,Hao Wu,Li Yang,Wenfeng Zhang,Haixin Chang###
(1778141, 1778155)
 TheMagnetoresistance (MR) of the all- devices is up to 15.89% at 2.3 K and 11.97%at 10 K, 4-30 times of MR from the spin valves ofFe3GaTe2/MoS2/Fe3GaTe2 and conventional NiFe/MoS2/NiFe.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[314.0, 2, 'D', 6],[192.0, 2, 'D', 3],[144.0, 2, 'D', 2],[101.0, 2, 'D', 1],[38.0, 15.89, '%', 0],[34.0, 2.3, 'K', 0],[30.0, 11.97, '%', 0],[25.0, 10, 'K', 0],[65.0, 0.31, '%', 2],[77.0, 300, 'K', 2],[90.0, 10, 'nA', 2],[124.0, 2, 'D', 3],[133.0, 2, 'D', 3]

NiFe/MoS2/NiFe
###Room-Temperature Spin-Valve Effect in Fe$_3$GaTe$_2$/MoS$_2$/Fe$_3$GaTe$_2$ 2D van der Waals Heterojunction Devices|Wen Jin,Gaojie Zhang,Hao Wu,Li Yang,Wenfeng Zhang,Haixin Chang###
(1778161, 1778169)
 TheMagnetoresistance (MR) of the all- devices is up to 15.89% at 2.3 K and 11.97%at 10 K, 4-30 times of MR from the spin valves ofFe3GaTe2/MoS2/Fe3GaTe2 and conventional NiFe/MoS2/NiFe.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[334.0, 2, 'D', 6],[212.0, 2, 'D', 3],[164.0, 2, 'D', 2],[121.0, 2, 'D', 1],[58.0, 15.89, '%', 0],[54.0, 2.3, 'K', 0],[50.0, 11.97, '%', 0],[45.0, 10, 'K', 0],[51.0, 0.31, '%', 2],[63.0, 300, 'K', 2],[76.0, 10, 'nA', 2],[110.0, 2, 'D', 3],[119.0, 2, 'D', 3]

MoS2
###Room-Temperature Spin-Valve Effect in Fe$_3$GaTe$_2$/MoS$_2$/Fe$_3$GaTe$_2$ 2D van der Waals Heterojunction Devices|Wen Jin,Gaojie Zhang,Hao Wu,Li Yang,Wenfeng Zhang,Haixin Chang###
(1778189, 1778191)
Typical spin valve effect shows strong dependence on MoS2 spacer thickness inthe vdW heterojunction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[362.0, 2, 'D', 7],[240.0, 2, 'D', 4],[192.0, 2, 'D', 3],[149.0, 2, 'D', 2],[86.0, 15.89, '%', 1],[82.0, 2.3, 'K', 1],[78.0, 11.97, '%', 1],[73.0, 10, 'K', 1],[29.0, 0.31, '%', 1],[41.0, 300, 'K', 1],[54.0, 10, 'nA', 1],[88.0, 2, 'D', 2],[97.0, 2, 'D', 2]

W
###Room-Temperature Spin-Valve Effect in Fe$_3$GaTe$_2$/MoS$_2$/Fe$_3$GaTe$_2$ 2D van der Waals Heterojunction Devices|Wen Jin,Gaojie Zhang,Hao Wu,Li Yang,Wenfeng Zhang,Haixin Chang###
(1778203, 1778203)
Typical spin valve effect shows strong dependence on MoS2 spacer thickness inthe vdW heterojunction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[376.0, 2, 'D', 7],[254.0, 2, 'D', 4],[206.0, 2, 'D', 3],[163.0, 2, 'D', 2],[100.0, 15.89, '%', 1],[96.0, 2.3, 'K', 1],[92.0, 11.97, '%', 1],[87.0, 10, 'K', 1],[17.0, 0.31, '%', 1],[29.0, 300, 'K', 1],[42.0, 10, 'nA', 1],[76.0, 2, 'D', 2],[85.0, 2, 'D', 2]

W
###Room-Temperature Spin-Valve Effect in Fe$_3$GaTe$_2$/MoS$_2$/Fe$_3$GaTe$_2$ 2D van der Waals Heterojunction Devices|Wen Jin,Gaojie Zhang,Hao Wu,Li Yang,Wenfeng Zhang,Haixin Chang###
(1778269, 1778269)
 The results provide a general vdW platform to room temperature, 2DFM<missing VAR> crystals based 2D spin valve devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[442.0, 2, 'D', 9],[320.0, 2, 'D', 6],[272.0, 2, 'D', 5],[229.0, 2, 'D', 4],[166.0, 15.89, '%', 3],[162.0, 2.3, 'K', 3],[158.0, 11.97, '%', 3],[153.0, 10, 'K', 3],[49.0, 0.31, '%', 1],[37.0, 300, 'K', 1],[24.0, 10, 'nA', 1],[10.0, 2, 'D', 0],[19.0, 2, 'D', 0]

F
###Room-Temperature Spin-Valve Effect in Fe$_3$GaTe$_2$/MoS$_2$/Fe$_3$GaTe$_2$ 2D van der Waals Heterojunction Devices|Wen Jin,Gaojie Zhang,Hao Wu,Li Yang,Wenfeng Zhang,Haixin Chang###
(1778282, 1778282)
 The results provide a general vdW platform to room temperature, 2DFM<missing VAR> crystals based 2D spin valve devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[455.0, 2, 'D', 9],[333.0, 2, 'D', 6],[285.0, 2, 'D', 5],[242.0, 2, 'D', 4],[179.0, 15.89, '%', 3],[175.0, 2.3, 'K', 3],[171.0, 11.97, '%', 3],[166.0, 10, 'K', 3],[62.0, 0.31, '%', 1],[50.0, 300, 'K', 1],[37.0, 10, 'nA', 1],[3.0, 2, 'D', 0],[6.0, 2, 'D', 0]

VC
###Heavily Damped Precessional Switching with Very Low Write-error Rate in Elliptical-cylinder Magnetic Tunnel Junction|Rie Matsumoto,Shinji Yuasa,Hiroshi Imamura###
(1778385, 1778386)
 Voltage-induced dynamic switching in magnetic tunnel junctions (MTJs) is awriting technique for voltage-controlled magnetoresistive random access memory(VCMRAM), which is expected to be an ultimate non-volatile memory withultra-low power consumption.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Heavily Damped Precessional Switching with Very Low Write-error Rate in Elliptical-cylinder Magnetic Tunnel Junction|Rie Matsumoto,Shinji Yuasa,Hiroshi Imamura###
(1778426, 1778426)
 In conventional dynamic switching, the width ofsub-nanosecond write voltage pulses must be precisely controlled to achieve asufficiently low write-error rate (WER).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Heavily Damped Precessional Switching with Very Low Write-error Rate in Elliptical-cylinder Magnetic Tunnel Junction|Rie Matsumoto,Shinji Yuasa,Hiroshi Imamura###
(1778478, 1778478)
 In conventional dynamic switching, the width ofsub-nanosecond write voltage pulses must be precisely controlled to achieve asufficiently low write-error rate (WER).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

VC
###Heavily Damped Precessional Switching with Very Low Write-error Rate in Elliptical-cylinder Magnetic Tunnel Junction|Rie Matsumoto,Shinji Yuasa,Hiroshi Imamura###
(1778513, 1778514)
 This very narrow tolerance of pulsewidth is the biggest technical difficulty in developing VCMRAM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

VC
###Heavily Damped Precessional Switching with Very Low Write-error Rate in Elliptical-cylinder Magnetic Tunnel Junction|Rie Matsumoto,Shinji Yuasa,Hiroshi Imamura###
(1778540, 1778541)
 Heavily dampedprecessional switching is a writing scheme for VCMRAM<missing VAR> with a substantially hightolerance of pulse width although the minimum WER has been much higher thanthat of conventional dynamic switching with an optimum pulse width.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Heavily Damped Precessional Switching with Very Low Write-error Rate in Elliptical-cylinder Magnetic Tunnel Junction|Rie Matsumoto,Shinji Yuasa,Hiroshi Imamura###
(1778570, 1778570)
 Heavily dampedprecessional switching is a writing scheme for VCMRAM<missing VAR> with a substantially hightolerance of pulse width although the minimum WER has been much higher thanthat of conventional dynamic switching with an optimum pulse width.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Heavily Damped Precessional Switching with Very Low Write-error Rate in Elliptical-cylinder Magnetic Tunnel Junction|Rie Matsumoto,Shinji Yuasa,Hiroshi Imamura###
(1778606, 1778606)
 In thisstudy, we theoretically investigate the effect of MTJ shape and the directionof the applied magnetic field on the WER of heavily damped precessionalswitching.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Heavily Damped Precessional Switching with Very Low Write-error Rate in Elliptical-cylinder Magnetic Tunnel Junction|Rie Matsumoto,Shinji Yuasa,Hiroshi Imamura###
(1778653, 1778653)
 In thisstudy, we theoretically investigate the effect of MTJ shape and the directionof the applied magnetic field on the WER of heavily damped precessionalswitching.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Heavily Damped Precessional Switching with Very Low Write-error Rate in Elliptical-cylinder Magnetic Tunnel Junction|Rie Matsumoto,Shinji Yuasa,Hiroshi Imamura###
(1778679, 1778679)
 The results show that the WER in elliptical-cylinder MTJ can beseveral orders of magnitude smaller than that in usual circular-cylinder MTJwhen the external magnetic field is applied parallel to the minor axis of theellipse.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Heavily Damped Precessional Switching with Very Low Write-error Rate in Elliptical-cylinder Magnetic Tunnel Junction|Rie Matsumoto,Shinji Yuasa,Hiroshi Imamura###
(1778763, 1778763)
 The reduction in WER is due to the fact that the demagnetization fieldnarrows the component of the magnetization distribution perpendicular to theplane direction immediately before the voltage is applied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magnetotransport induced by anomalous Hall effect|Jiaji Zhao,Bingyan Jiang,Jinying Yang,Lujunyu Wang,Hengjie Shi,Guang Tian,Zhilin Li,Enke Liu,Xiaosong Wu###
(1778845, 1778845)
 In a magnetic metal, the Hall resistance is generally taken to be the sum ofthe ordinary Hall resistance and the anomalous Hall resistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Magnetotransport induced by anomalous Hall effect|Jiaji Zhao,Bingyan Jiang,Jinying Yang,Lujunyu Wang,Hengjie Shi,Guang Tian,Zhilin Li,Enke Liu,Xiaosong Wu###
(1778993, 1778993)
 Using the properconductivity relation, we reveal an unexpected magnetoresistance (MR) inducedby the anomalous Hall effect (AHE).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Magnetotransport induced by anomalous Hall effect|Jiaji Zhao,Bingyan Jiang,Jinying Yang,Lujunyu Wang,Hengjie Shi,Guang Tian,Zhilin Li,Enke Liu,Xiaosong Wu###
(1779000, 1779000)
 A B-linear MR arises and the sign of theslope depends on the sign of the anomalous Hall angle, giving rise to acharacteristic bowtie shape.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Magnetotransport induced by anomalous Hall effect|Jiaji Zhao,Bingyan Jiang,Jinying Yang,Lujunyu Wang,Hengjie Shi,Guang Tian,Zhilin Li,Enke Liu,Xiaosong Wu###
(1779110, 1779110)
 A B-symmetric component appears in the Hall.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Magnetotransport induced by anomalous Hall effect|Jiaji Zhao,Bingyan Jiang,Jinying Yang,Lujunyu Wang,Hengjie Shi,Guang Tian,Zhilin Li,Enke Liu,Xiaosong Wu###
(1779154, 1779154)
 These effectsreflect the fundamental difference between the ordinary Hall effect and theAHE<missing VAR>.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co3Sn2S2
###Magnetotransport induced by anomalous Hall effect|Jiaji Zhao,Bingyan Jiang,Jinying Yang,Lujunyu Wang,Hengjie Shi,Guang Tian,Zhilin Li,Enke Liu,Xiaosong Wu###
(1779185, 1779190)
 Furthermore, we experimentally reproduce the unusual MR and Hall reportedbefore in Co3Sn2S2 and show that these observations can be wellexplained by the proposed mechanism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CsTi3Bi5
###Superconductivity and orbital-selective nematic order in a new titanium-based kagome metal CsTi3Bi5|Haitao Yang,Yuhan Ye,Zhen Zhao,Jiali Liu,Xin-Wei Yi,Yuhang Zhang,Jinan Shi,Jing-Yang You,Zihao Huang,Bingjie Wang,Jing Wang,Hui Guo,Xiao Lin,Chengmin Shen,Wu Zhou,Hui Chen,Xiaoli Dong,Gang Su,Ziqiang Wang,Hong-Jun Gao###
(1779325, 1779329)
Superconductivity and orbital-selective nematic order in a new titanium-based kagome metal CsTi3Bi5.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5555555555555556,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, 4.8, 'K', 4]

V3Sb5
###Superconductivity and orbital-selective nematic order in a new titanium-based kagome metal CsTi3Bi5|Haitao Yang,Yuhan Ye,Zhen Zhao,Jiali Liu,Xin-Wei Yi,Yuhang Zhang,Jinan Shi,Jing-Yang You,Zihao Huang,Bingjie Wang,Jing Wang,Hui Guo,Xiao Lin,Chengmin Shen,Wu Zhou,Hui Chen,Xiaoli Dong,Gang Su,Ziqiang Wang,Hong-Jun Gao###
(1779428, 1779431)
 Anexample is the enormous interests generated by the cascade of correlatedtopological quantum states in the newly discovered vanadium-based kagomesuperconductors AV3Sb5 (AK, Rb, and Cs) with a Z<missing VAR>2 topological band structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.375,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.625,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 4.8, 'K', 2]

K
###Superconductivity and orbital-selective nematic order in a new titanium-based kagome metal CsTi3Bi5|Haitao Yang,Yuhan Ye,Zhen Zhao,Jiali Liu,Xin-Wei Yi,Yuhang Zhang,Jinan Shi,Jing-Yang You,Zihao Huang,Bingjie Wang,Jing Wang,Hui Guo,Xiao Lin,Chengmin Shen,Wu Zhou,Hui Chen,Xiaoli Dong,Gang Su,Ziqiang Wang,Hong-Jun Gao###
(1779435, 1779435)
 Anexample is the enormous interests generated by the cascade of correlatedtopological quantum states in the newly discovered vanadium-based kagomesuperconductors AV3Sb5 (AK, Rb, and Cs) with a Z<missing VAR>2 topological band structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 4.8, 'K', 2]

Rb
###Superconductivity and orbital-selective nematic order in a new titanium-based kagome metal CsTi3Bi5|Haitao Yang,Yuhan Ye,Zhen Zhao,Jiali Liu,Xin-Wei Yi,Yuhang Zhang,Jinan Shi,Jing-Yang You,Zihao Huang,Bingjie Wang,Jing Wang,Hui Guo,Xiao Lin,Chengmin Shen,Wu Zhou,Hui Chen,Xiaoli Dong,Gang Su,Ziqiang Wang,Hong-Jun Gao###
(1779438, 1779438)
 Anexample is the enormous interests generated by the cascade of correlatedtopological quantum states in the newly discovered vanadium-based kagomesuperconductors AV3Sb5 (AK, Rb, and Cs) with a Z<missing VAR>2 topological band structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 4.8, 'K', 2]

Cs
###Superconductivity and orbital-selective nematic order in a new titanium-based kagome metal CsTi3Bi5|Haitao Yang,Yuhan Ye,Zhen Zhao,Jiali Liu,Xin-Wei Yi,Yuhang Zhang,Jinan Shi,Jing-Yang You,Zihao Huang,Bingjie Wang,Jing Wang,Hui Guo,Xiao Lin,Chengmin Shen,Wu Zhou,Hui Chen,Xiaoli Dong,Gang Su,Ziqiang Wang,Hong-Jun Gao###
(1779443, 1779443)
 Anexample is the enormous interests generated by the cascade of correlatedtopological quantum states in the newly discovered vanadium-based kagomesuperconductors AV3Sb5 (AK, Rb, and Cs) with a Z<missing VAR>2 topological band structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 4.8, 'K', 2]

CsTi3Bi5
###Superconductivity and orbital-selective nematic order in a new titanium-based kagome metal CsTi3Bi5|Haitao Yang,Yuhan Ye,Zhen Zhao,Jiali Liu,Xin-Wei Yi,Yuhang Zhang,Jinan Shi,Jing-Yang You,Zihao Huang,Bingjie Wang,Jing Wang,Hui Guo,Xiao Lin,Chengmin Shen,Wu Zhou,Hui Chen,Xiaoli Dong,Gang Su,Ziqiang Wang,Hong-Jun Gao###
(1779490, 1779494)
Here we report the successful fabrication of single-crystals of titanium-basedkagome metal CsTi3Bi5 and the observation of superconductivity and electronicnematicity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5555555555555556,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 4.8, 'K', 1]

Tc
###Superconductivity and orbital-selective nematic order in a new titanium-based kagome metal CsTi3Bi5|Haitao Yang,Yuhan Ye,Zhen Zhao,Jiali Liu,Xin-Wei Yi,Yuhang Zhang,Jinan Shi,Jing-Yang You,Zihao Huang,Bingjie Wang,Jing Wang,Hui Guo,Xiao Lin,Chengmin Shen,Wu Zhou,Hui Chen,Xiaoli Dong,Gang Su,Ziqiang Wang,Hong-Jun Gao###
(1779528, 1779528)
 The onset of the superconducting transition temperature Tc isaround 4.8 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 4.8, 'K', 0]

In
###Superconductivity and orbital-selective nematic order in a new titanium-based kagome metal CsTi3Bi5|Haitao Yang,Yuhan Ye,Zhen Zhao,Jiali Liu,Xin-Wei Yi,Yuhang Zhang,Jinan Shi,Jing-Yang You,Zihao Huang,Bingjie Wang,Jing Wang,Hui Guo,Xiao Lin,Chengmin Shen,Wu Zhou,Hui Chen,Xiaoli Dong,Gang Su,Ziqiang Wang,Hong-Jun Gao###
(1779537, 1779537)
 In sharp contrast to the charge density wave superconductorAV3Sb5, we find that the kagome superconductor CsTi3Bi5 preserves translationsymmetry, but breaks rotational symmetry and exhibits an electronic nematicity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 4.8, 'K', 1]

V3Sb5
###Superconductivity and orbital-selective nematic order in a new titanium-based kagome metal CsTi3Bi5|Haitao Yang,Yuhan Ye,Zhen Zhao,Jiali Liu,Xin-Wei Yi,Yuhang Zhang,Jinan Shi,Jing-Yang You,Zihao Huang,Bingjie Wang,Jing Wang,Hui Guo,Xiao Lin,Chengmin Shen,Wu Zhou,Hui Chen,Xiaoli Dong,Gang Su,Ziqiang Wang,Hong-Jun Gao###
(1779557, 1779560)
 In sharp contrast to the charge density wave superconductorAV3Sb5, we find that the kagome superconductor CsTi3Bi5 preserves translationsymmetry, but breaks rotational symmetry and exhibits an electronic nematicity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.375,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.625,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 4.8, 'K', 1]

CsTi3Bi5
###Superconductivity and orbital-selective nematic order in a new titanium-based kagome metal CsTi3Bi5|Haitao Yang,Yuhan Ye,Zhen Zhao,Jiali Liu,Xin-Wei Yi,Yuhang Zhang,Jinan Shi,Jing-Yang You,Zihao Huang,Bingjie Wang,Jing Wang,Hui Guo,Xiao Lin,Chengmin Shen,Wu Zhou,Hui Chen,Xiaoli Dong,Gang Su,Ziqiang Wang,Hong-Jun Gao###
(1779575, 1779579)
 In sharp contrast to the charge density wave superconductorAV3Sb5, we find that the kagome superconductor CsTi3Bi5 preserves translationsymmetry, but breaks rotational symmetry and exhibits an electronic nematicity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5555555555555556,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 4.8, 'K', 1]

C2
###Superconductivity and orbital-selective nematic order in a new titanium-based kagome metal CsTi3Bi5|Haitao Yang,Yuhan Ye,Zhen Zhao,Jiali Liu,Xin-Wei Yi,Yuhang Zhang,Jinan Shi,Jing-Yang You,Zihao Huang,Bingjie Wang,Jing Wang,Hui Guo,Xiao Lin,Chengmin Shen,Wu Zhou,Hui Chen,Xiaoli Dong,Gang Su,Ziqiang Wang,Hong-Jun Gao###
(1779675, 1779676)
 The scanningtunneling microscopy and spectroscopic imaging detect rotational-symmetrybreaking C2 quasiparticle interference patterns (Q<missing VAR>PI) at low energies,providing further microscopic evidence for electronic nematicity.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 4.8, 'K', 3]

I
###Superconductivity and orbital-selective nematic order in a new titanium-based kagome metal CsTi3Bi5|Haitao Yang,Yuhan Ye,Zhen Zhao,Jiali Liu,Xin-Wei Yi,Yuhang Zhang,Jinan Shi,Jing-Yang You,Zihao Huang,Bingjie Wang,Jing Wang,Hui Guo,Xiao Lin,Chengmin Shen,Wu Zhou,Hui Chen,Xiaoli Dong,Gang Su,Ziqiang Wang,Hong-Jun Gao###
(1779687, 1779687)
 The scanningtunneling microscopy and spectroscopic imaging detect rotational-symmetrybreaking C2 quasiparticle interference patterns (Q<missing VAR>PI) at low energies,providing further microscopic evidence for electronic nematicity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 4.8, 'K', 3]

PI
###Superconductivity and orbital-selective nematic order in a new titanium-based kagome metal CsTi3Bi5|Haitao Yang,Yuhan Ye,Zhen Zhao,Jiali Liu,Xin-Wei Yi,Yuhang Zhang,Jinan Shi,Jing-Yang You,Zihao Huang,Bingjie Wang,Jing Wang,Hui Guo,Xiao Lin,Chengmin Shen,Wu Zhou,Hui Chen,Xiaoli Dong,Gang Su,Ziqiang Wang,Hong-Jun Gao###
(1779736, 1779737)
 Combined withfirst-principle calculations, we find that the nematic Q<missing VAR>PI is orbital-selectiveand dominated by the Ti dxz and dyz orbitals, possibly originating from theintriguing orbital bond nematic order.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[202.0, 4.8, 'K', 4]

Ti
###Superconductivity and orbital-selective nematic order in a new titanium-based kagome metal CsTi3Bi5|Haitao Yang,Yuhan Ye,Zhen Zhao,Jiali Liu,Xin-Wei Yi,Yuhang Zhang,Jinan Shi,Jing-Yang You,Zihao Huang,Bingjie Wang,Jing Wang,Hui Guo,Xiao Lin,Chengmin Shen,Wu Zhou,Hui Chen,Xiaoli Dong,Gang Su,Ziqiang Wang,Hong-Jun Gao###
(1779754, 1779754)
 Combined withfirst-principle calculations, we find that the nematic Q<missing VAR>PI is orbital-selectiveand dominated by the Ti dxz and dyz orbitals, possibly originating from theintriguing orbital bond nematic order.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[220.0, 4.8, 'K', 4]

CsTi3Bi5
###Superconductivity and orbital-selective nematic order in a new titanium-based kagome metal CsTi3Bi5|Haitao Yang,Yuhan Ye,Zhen Zhao,Jiali Liu,Xin-Wei Yi,Yuhang Zhang,Jinan Shi,Jing-Yang You,Zihao Huang,Bingjie Wang,Jing Wang,Hui Guo,Xiao Lin,Chengmin Shen,Wu Zhou,Hui Chen,Xiaoli Dong,Gang Su,Ziqiang Wang,Hong-Jun Gao###
(1779800, 1779804)
 Our findings in the new 135 materialCsTi3Bi5 provide new directions for exploring the multi-orbital correlationeffect and the role of orbital or bond order in the electron liquid crystalphases evidenced by the symmetry breaking states in kagome superconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1111111111111111,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5555555555555556,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[266.0, 4.8, 'K', 5]

C
###Non-linear Transport Phenomena and Current-induced Hydrodynamics in Ultra-high Mobility Two-dimensional Electron Gas|Zitong Wang,Michael Hilke,Norm Fong,Guy Austing,Sergei Studenikin,Ken West,Loren Pfeiffer###
(1779941, 1779941)
 We report on non-linear transport phenomena at high filling factor and D<missing VAR>Ccurrent-induced electronic hydrodynamics in an ultra-high mobility (mu20x<missing VAR>106cm2/Vs) two-dimensional electron gas in a narrow (15 micron wide) GaAs/AlGaAsHall bar for D<missing VAR>C current densities reaching 0.67 A/m<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 0.67, 'A', 0],[140.0, 250, 'mT', 1]

GaAs/AlGaAs
###Non-linear Transport Phenomena and Current-induced Hydrodynamics in Ultra-high Mobility Two-dimensional Electron Gas|Zitong Wang,Michael Hilke,Norm Fong,Guy Austing,Sergei Studenikin,Ken West,Loren Pfeiffer###
(1779998, 1780003)
 We report on non-linear transport phenomena at high filling factor and D<missing VAR>Ccurrent-induced electronic hydrodynamics in an ultra-high mobility (mu20x<missing VAR>106cm2/Vs) two-dimensional electron gas in a narrow (15 micron wide) GaAs/AlGaAsHall bar for D<missing VAR>C current densities reaching 0.67 A/m<missing VAR>.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[17.0, 0.67, 'A', 0],[78.0, 250, 'mT', 1]

C
###Non-linear Transport Phenomena and Current-induced Hydrodynamics in Ultra-high Mobility Two-dimensional Electron Gas|Zitong Wang,Michael Hilke,Norm Fong,Guy Austing,Sergei Studenikin,Ken West,Loren Pfeiffer###
(1780013, 1780013)
 We report on non-linear transport phenomena at high filling factor and D<missing VAR>Ccurrent-induced electronic hydrodynamics in an ultra-high mobility (mu20x<missing VAR>106cm2/Vs) two-dimensional electron gas in a narrow (15 micron wide) GaAs/AlGaAsHall bar for D<missing VAR>C current densities reaching 0.67 A/m<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 0.67, 'A', 0],[68.0, 250, 'mT', 1]

C
###Non-linear Transport Phenomena and Current-induced Hydrodynamics in Ultra-high Mobility Two-dimensional Electron Gas|Zitong Wang,Michael Hilke,Norm Fong,Guy Austing,Sergei Studenikin,Ken West,Loren Pfeiffer###
(1780088, 1780088)
 The various phenomena andthe boundaries between the phenomena are captured together in a two-dimensionaldifferential resistivity map as a function of magnetic field (up to 250 mT) andD<missing VAR>C current.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 0.67, 'A', 1],[7.0, 250, 'mT', 0]

H
###Non-linear Transport Phenomena and Current-induced Hydrodynamics in Ultra-high Mobility Two-dimensional Electron Gas|Zitong Wang,Michael Hilke,Norm Fong,Guy Austing,Sergei Studenikin,Ken West,Loren Pfeiffer###
(1780128, 1780128)
 This map, which resembles a phase diagram, demarcate distinctregions dominated by Shubnikov-de Haas (SdH) oscillations (and phase inversionof these oscillations) around zero D<missing VAR>C current; negative magnetoresistance and adouble-peak feature (both ballistic in origin) around zero field; and Hallfield-induced resistance oscillations (HIR<missing VAR>Os) radiating out from the origin.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 0.67, 'A', 2],[47.0, 250, 'mT', 1]

C
###Non-linear Transport Phenomena and Current-induced Hydrodynamics in Ultra-high Mobility Two-dimensional Electron Gas|Zitong Wang,Michael Hilke,Norm Fong,Guy Austing,Sergei Studenikin,Ken West,Loren Pfeiffer###
(1780153, 1780153)
 This map, which resembles a phase diagram, demarcate distinctregions dominated by Shubnikov-de Haas (SdH) oscillations (and phase inversionof these oscillations) around zero D<missing VAR>C current; negative magnetoresistance and adouble-peak feature (both ballistic in origin) around zero field; and Hallfield-induced resistance oscillations (HIR<missing VAR>Os) radiating out from the origin.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 0.67, 'A', 2],[72.0, 250, 'mT', 1]

HI
###Non-linear Transport Phenomena and Current-induced Hydrodynamics in Ultra-high Mobility Two-dimensional Electron Gas|Zitong Wang,Michael Hilke,Norm Fong,Guy Austing,Sergei Studenikin,Ken West,Loren Pfeiffer###
(1780204, 1780205)
 This map, which resembles a phase diagram, demarcate distinctregions dominated by Shubnikov-de Haas (SdH) oscillations (and phase inversionof these oscillations) around zero D<missing VAR>C current; negative magnetoresistance and adouble-peak feature (both ballistic in origin) around zero field; and Hallfield-induced resistance oscillations (HIR<missing VAR>Os) radiating out from the origin.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[184.0, 0.67, 'A', 2],[123.0, 250, 'mT', 1]

Os
###Non-linear Transport Phenomena and Current-induced Hydrodynamics in Ultra-high Mobility Two-dimensional Electron Gas|Zitong Wang,Michael Hilke,Norm Fong,Guy Austing,Sergei Studenikin,Ken West,Loren Pfeiffer###
(1780207, 1780207)
 This map, which resembles a phase diagram, demarcate distinctregions dominated by Shubnikov-de Haas (SdH) oscillations (and phase inversionof these oscillations) around zero D<missing VAR>C current; negative magnetoresistance and adouble-peak feature (both ballistic in origin) around zero field; and Hallfield-induced resistance oscillations (HIR<missing VAR>Os) radiating out from the origin.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[187.0, 0.67, 'A', 2],[126.0, 250, 'mT', 1]

C
###Non-linear Transport Phenomena and Current-induced Hydrodynamics in Ultra-high Mobility Two-dimensional Electron Gas|Zitong Wang,Michael Hilke,Norm Fong,Guy Austing,Sergei Studenikin,Ken West,Loren Pfeiffer###
(1780255, 1780255)
From a detailed analysis of the data near zero field, we show that increasingthe D<missing VAR>C current suppresses the electron-electron scattering length that drives agrowing hydrodynamic contribution to both the differential longitudinal andtransverse (Hall) resistivities.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[235.0, 0.67, 'A', 3],[174.0, 250, 'mT', 2]

C
###Non-linear Transport Phenomena and Current-induced Hydrodynamics in Ultra-high Mobility Two-dimensional Electron Gas|Zitong Wang,Michael Hilke,Norm Fong,Guy Austing,Sergei Studenikin,Ken West,Loren Pfeiffer###
(1780319, 1780319)
 Our approach to induce hydrodynamics with D<missing VAR>Ccurrent differs from the more usual approach of changing the temperature.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[299.0, 0.67, 'A', 4],[238.0, 250, 'mT', 3]

H
###Non-linear Transport Phenomena and Current-induced Hydrodynamics in Ultra-high Mobility Two-dimensional Electron Gas|Zitong Wang,Michael Hilke,Norm Fong,Guy Austing,Sergei Studenikin,Ken West,Loren Pfeiffer###
(1780384, 1780384)
 Wealso find a significant (factor of two to four) difference between the quantumlifetime extracted from SdH oscillations, and the quantum lifetime extractedfrom HIR<missing VAR>Os.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[364.0, 0.67, 'A', 5],[303.0, 250, 'mT', 4]

HI
###Non-linear Transport Phenomena and Current-induced Hydrodynamics in Ultra-high Mobility Two-dimensional Electron Gas|Zitong Wang,Michael Hilke,Norm Fong,Guy Austing,Sergei Studenikin,Ken West,Loren Pfeiffer###
(1780402, 1780403)
 Wealso find a significant (factor of two to four) difference between the quantumlifetime extracted from SdH oscillations, and the quantum lifetime extractedfrom HIR<missing VAR>Os.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[382.0, 0.67, 'A', 5],[321.0, 250, 'mT', 4]

Os
###Non-linear Transport Phenomena and Current-induced Hydrodynamics in Ultra-high Mobility Two-dimensional Electron Gas|Zitong Wang,Michael Hilke,Norm Fong,Guy Austing,Sergei Studenikin,Ken West,Loren Pfeiffer###
(1780405, 1780405)
 Wealso find a significant (factor of two to four) difference between the quantumlifetime extracted from SdH oscillations, and the quantum lifetime extractedfrom HIR<missing VAR>Os.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[385.0, 0.67, 'A', 5],[324.0, 250, 'mT', 4]

In
###Non-linear Transport Phenomena and Current-induced Hydrodynamics in Ultra-high Mobility Two-dimensional Electron Gas|Zitong Wang,Michael Hilke,Norm Fong,Guy Austing,Sergei Studenikin,Ken West,Loren Pfeiffer###
(1780408, 1780408)
 In addition to observing HIR<missing VAR>O peaks up to the seventh order, weobserve an unexpected HIR<missing VAR>O-like feature close to mid-way between thefirst-order and the second-order HIR<missing VAR>O maxima at high D<missing VAR>C current.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[388.0, 0.67, 'A', 6],[327.0, 250, 'mT', 5]

HI
###Non-linear Transport Phenomena and Current-induced Hydrodynamics in Ultra-high Mobility Two-dimensional Electron Gas|Zitong Wang,Michael Hilke,Norm Fong,Guy Austing,Sergei Studenikin,Ken West,Loren Pfeiffer###
(1780416, 1780417)
 In addition to observing HIR<missing VAR>O peaks up to the seventh order, weobserve an unexpected HIR<missing VAR>O-like feature close to mid-way between thefirst-order and the second-order HIR<missing VAR>O maxima at high D<missing VAR>C current.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[396.0, 0.67, 'A', 6],[335.0, 250, 'mT', 5]

O
###Non-linear Transport Phenomena and Current-induced Hydrodynamics in Ultra-high Mobility Two-dimensional Electron Gas|Zitong Wang,Michael Hilke,Norm Fong,Guy Austing,Sergei Studenikin,Ken West,Loren Pfeiffer###
(1780419, 1780419)
 In addition to observing HIR<missing VAR>O peaks up to the seventh order, weobserve an unexpected HIR<missing VAR>O-like feature close to mid-way between thefirst-order and the second-order HIR<missing VAR>O maxima at high D<missing VAR>C current.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[399.0, 0.67, 'A', 6],[338.0, 250, 'mT', 5]

HI
###Non-linear Transport Phenomena and Current-induced Hydrodynamics in Ultra-high Mobility Two-dimensional Electron Gas|Zitong Wang,Michael Hilke,Norm Fong,Guy Austing,Sergei Studenikin,Ken West,Loren Pfeiffer###
(1780443, 1780444)
 In addition to observing HIR<missing VAR>O peaks up to the seventh order, weobserve an unexpected HIR<missing VAR>O-like feature close to mid-way between thefirst-order and the second-order HIR<missing VAR>O maxima at high D<missing VAR>C current.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[423.0, 0.67, 'A', 6],[362.0, 250, 'mT', 5]

O
###Non-linear Transport Phenomena and Current-induced Hydrodynamics in Ultra-high Mobility Two-dimensional Electron Gas|Zitong Wang,Michael Hilke,Norm Fong,Guy Austing,Sergei Studenikin,Ken West,Loren Pfeiffer###
(1780446, 1780446)
 In addition to observing HIR<missing VAR>O peaks up to the seventh order, weobserve an unexpected HIR<missing VAR>O-like feature close to mid-way between thefirst-order and the second-order HIR<missing VAR>O maxima at high D<missing VAR>C current.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[426.0, 0.67, 'A', 6],[365.0, 250, 'mT', 5]

HI
###Non-linear Transport Phenomena and Current-induced Hydrodynamics in Ultra-high Mobility Two-dimensional Electron Gas|Zitong Wang,Michael Hilke,Norm Fong,Guy Austing,Sergei Studenikin,Ken West,Loren Pfeiffer###
(1780477, 1780478)
 In addition to observing HIR<missing VAR>O peaks up to the seventh order, weobserve an unexpected HIR<missing VAR>O-like feature close to mid-way between thefirst-order and the second-order HIR<missing VAR>O maxima at high D<missing VAR>C current.
Featurization terminated normally.
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[457.0, 0.67, 'A', 6],[396.0, 250, 'mT', 5]

O
###Non-linear Transport Phenomena and Current-induced Hydrodynamics in Ultra-high Mobility Two-dimensional Electron Gas|Zitong Wang,Michael Hilke,Norm Fong,Guy Austing,Sergei Studenikin,Ken West,Loren Pfeiffer###
(1780480, 1780480)
 In addition to observing HIR<missing VAR>O peaks up to the seventh order, weobserve an unexpected HIR<missing VAR>O-like feature close to mid-way between thefirst-order and the second-order HIR<missing VAR>O maxima at high D<missing VAR>C current.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[460.0, 0.67, 'A', 6],[399.0, 250, 'mT', 5]

C
###Non-linear Transport Phenomena and Current-induced Hydrodynamics in Ultra-high Mobility Two-dimensional Electron Gas|Zitong Wang,Michael Hilke,Norm Fong,Guy Austing,Sergei Studenikin,Ken West,Loren Pfeiffer###
(1780489, 1780489)
 In addition to observing HIR<missing VAR>O peaks up to the seventh order, weobserve an unexpected HIR<missing VAR>O-like feature close to mid-way between thefirst-order and the second-order HIR<missing VAR>O maxima at high D<missing VAR>C current.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[469.0, 0.67, 'A', 6],[408.0, 250, 'mT', 5]

(LaNdPrSmEu)1
###Magnetic and Electrical Properties of high-entropy rare-earth manganites|Ashutosh Kumar,David Bérardan,Diana Dragoe,Eric Riviere,Tomohiro Takayama,Hidenori Takagi,Nita Dragoe###
(1780965, 1780972)
 Thehigh-entropy samples (LaNdPrSmEu)1-xSrxMnO3(0leqtextitx<missing VAR>leq0.5), synthesized using the solid-state technique, showa change in the crystal structure from textitPbnm to textitR<missing VAR>-3c<missing VAR> withincreasing Sr substitution, attributed to the change in the tolerance factor.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0.2,0.2,0,0.2,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[174.0, 0.3, ',', 2]

MnO3
###Magnetic and Electrical Properties of high-entropy rare-earth manganites|Ashutosh Kumar,David Bérardan,Diana Dragoe,Eric Riviere,Tomohiro Takayama,Hidenori Takagi,Nita Dragoe###
(1780977, 1780979)
 Thehigh-entropy samples (LaNdPrSmEu)1-xSrxMnO3(0leqtextitx<missing VAR>leq0.5), synthesized using the solid-state technique, showa change in the crystal structure from textitPbnm to textitR<missing VAR>-3c<missing VAR> withincreasing Sr substitution, attributed to the change in the tolerance factor.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 0.3, ',', 2]

Sr
###Magnetic and Electrical Properties of high-entropy rare-earth manganites|Ashutosh Kumar,David Bérardan,Diana Dragoe,Eric Riviere,Tomohiro Takayama,Hidenori Takagi,Nita Dragoe###
(1781038, 1781038)
 Thehigh-entropy samples (LaNdPrSmEu)1-xSrxMnO3(0leqtextitx<missing VAR>leq0.5), synthesized using the solid-state technique, showa change in the crystal structure from textitPbnm to textitR<missing VAR>-3c<missing VAR> withincreasing Sr substitution, attributed to the change in the tolerance factor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 0.3, ',', 2]

La0.7Sr0.3MnO3
###Magnetic and Electrical Properties of high-entropy rare-earth manganites|Ashutosh Kumar,David Bérardan,Diana Dragoe,Eric Riviere,Tomohiro Takayama,Hidenori Takagi,Nita Dragoe###
(1781156, 1781162)
 Further, the Curie temperature issmaller for the high-entropy sample with textitx<missing VAR>0.3, as compared toLa0.7Sr0.3MnO3, suggesting a strong relation between the Curietemperature and the Mn-O-Mn bond angle associated with the reduced ionic radiiat the rare-earth site.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 0.3, ',', 0]

Mn
###Magnetic and Electrical Properties of high-entropy rare-earth manganites|Ashutosh Kumar,David Bérardan,Diana Dragoe,Eric Riviere,Tomohiro Takayama,Hidenori Takagi,Nita Dragoe###
(1781186, 1781186)
 Further, the Curie temperature issmaller for the high-entropy sample with textitx<missing VAR>0.3, as compared toLa0.7Sr0.3MnO3, suggesting a strong relation between the Curietemperature and the Mn-O-Mn bond angle associated with the reduced ionic radiiat the rare-earth site.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 0.3, ',', 0]

O
###Magnetic and Electrical Properties of high-entropy rare-earth manganites|Ashutosh Kumar,David Bérardan,Diana Dragoe,Eric Riviere,Tomohiro Takayama,Hidenori Takagi,Nita Dragoe###
(1781188, 1781188)
 Further, the Curie temperature issmaller for the high-entropy sample with textitx<missing VAR>0.3, as compared toLa0.7Sr0.3MnO3, suggesting a strong relation between the Curietemperature and the Mn-O-Mn bond angle associated with the reduced ionic radiiat the rare-earth site.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 0.3, ',', 0]

Mn
###Magnetic and Electrical Properties of high-entropy rare-earth manganites|Ashutosh Kumar,David Bérardan,Diana Dragoe,Eric Riviere,Tomohiro Takayama,Hidenori Takagi,Nita Dragoe###
(1781190, 1781190)
 Further, the Curie temperature issmaller for the high-entropy sample with textitx<missing VAR>0.3, as compared toLa0.7Sr0.3MnO3, suggesting a strong relation between the Curietemperature and the Mn-O-Mn bond angle associated with the reduced ionic radiiat the rare-earth site.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 0.3, ',', 0]

La1-xSr
###Magnetic and Electrical Properties of high-entropy rare-earth manganites|Ashutosh Kumar,David Bérardan,Diana Dragoe,Eric Riviere,Tomohiro Takayama,Hidenori Takagi,Nita Dragoe###
(1781247, 1781251)
 The electrical resistivity of the high-entropy samplesis larger than those of La1-xSrx<missing VAR>MnO3, which can be ascribed to thereduced bandwidth due to the enhanced structural distortion.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[101.0, 0.3, ',', 1]

MnO3
###Magnetic and Electrical Properties of high-entropy rare-earth manganites|Ashutosh Kumar,David Bérardan,Diana Dragoe,Eric Riviere,Tomohiro Takayama,Hidenori Takagi,Nita Dragoe###
(1781253, 1781255)
 The electrical resistivity of the high-entropy samplesis larger than those of La1-xSrx<missing VAR>MnO3, which can be ascribed to thereduced bandwidth due to the enhanced structural distortion.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 0.3, ',', 1]

Sr
###Magnetic and Electrical Properties of high-entropy rare-earth manganites|Ashutosh Kumar,David Bérardan,Diana Dragoe,Eric Riviere,Tomohiro Takayama,Hidenori Takagi,Nita Dragoe###
(1781320, 1781320)
 A concomitant risein magnetoresistance is observed for high-entropy samples with the increase inSr concentration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[174.0, 0.3, ',', 2]

FeRhCrSi
###FeRhCrSi: A new spin semimetal with room temperature spin-valve behavior|Y. Venkateswara,Jadupati Nag,S. Shanmukharao Samatham,Akhilesh Kumar Patel,P. D. Babu,Manoj Raama Varma,Jayita Nayak,K. G. Suresh,Aftab Alam###
(1781374, 1781377)
FeRhCrSi A new spin semimetal with room temperature spin-valve behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 400, 'K', 2],[170.0, 50, '%', 3],[188.0, 300, 'K', 4]

FeRhCrSi
###FeRhCrSi: A new spin semimetal with room temperature spin-valve behavior|Y. Venkateswara,Jadupati Nag,S. Shanmukharao Samatham,Akhilesh Kumar Patel,P. D. Babu,Manoj Raama Varma,Jayita Nayak,K. G. Suresh,Aftab Alam###
(1781494, 1781497)
 Here, we presentexperimental verification of spin semimetallic behavior in FeRhCrSi, aquaternary Heusler alloy with saturation moment 2 muB and Curie temperature> 400 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 400, 'K', 0],[50.0, 50, '%', 1],[68.0, 300, 'K', 2]

B
###FeRhCrSi: A new spin semimetal with room temperature spin-valve behavior|Y. Venkateswara,Jadupati Nag,S. Shanmukharao Samatham,Akhilesh Kumar Patel,P. D. Babu,Manoj Raama Varma,Jayita Nayak,K. G. Suresh,Aftab Alam###
(1781518, 1781518)
 Here, we presentexperimental verification of spin semimetallic behavior in FeRhCrSi, aquaternary Heusler alloy with saturation moment 2 muB and Curie temperature> 400 K.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 400, 'K', 0],[29.0, 50, '%', 1],[47.0, 300, 'K', 2]

Fe
###FeRhCrSi: A new spin semimetal with room temperature spin-valve behavior|Y. Venkateswara,Jadupati Nag,S. Shanmukharao Samatham,Akhilesh Kumar Patel,P. D. Babu,Manoj Raama Varma,Jayita Nayak,K. G. Suresh,Aftab Alam###
(1781557, 1781557)
 It crystallises in the L<missing VAR>21 structure with 50% antisitedisorder between Fe and Rh.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 400, 'K', 1],[10.0, 50, '%', 0],[8.0, 300, 'K', 1]

Rh
###FeRhCrSi: A new spin semimetal with room temperature spin-valve behavior|Y. Venkateswara,Jadupati Nag,S. Shanmukharao Samatham,Akhilesh Kumar Patel,P. D. Babu,Manoj Raama Varma,Jayita Nayak,K. G. Suresh,Aftab Alam###
(1781561, 1781561)
 It crystallises in the L<missing VAR>21 structure with 50% antisitedisorder between Fe and Rh.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 400, 'K', 1],[14.0, 50, '%', 0],[4.0, 300, 'K', 1]

FeRhCrSi
###FeRhCrSi: A new spin semimetal with room temperature spin-valve behavior|Y. Venkateswara,Jadupati Nag,S. Shanmukharao Samatham,Akhilesh Kumar Patel,P. D. Babu,Manoj Raama Varma,Jayita Nayak,K. G. Suresh,Aftab Alam###
(1781812, 1781815)
 Theferrimagnetic disordered structure confirms the spin semimetallic feature ofFeRhCrSi, as observed experimentally.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[284.0, 400, 'K', 7],[265.0, 50, '%', 6],[247.0, 300, 'K', 5]

N
###Néel Spin Currents in Antiferromagnets|Ding-Fu Shao,Yuan-Yuan Jiang,Jun Ding,Shu-Hui Zhang,Zi-An Wang,Rui-Chun Xiao,Gautam Gurung,W. J. Lu,Y. P. Sun,Evgeny Y. Tsymbal###
(1781833, 1781833)
Nel Spin Currents in Antiferromagnets.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Néel Spin Currents in Antiferromagnets|Ding-Fu Shao,Yuan-Yuan Jiang,Jun Ding,Shu-Hui Zhang,Zi-An Wang,Rui-Chun Xiao,Gautam Gurung,W. J. Lu,Y. P. Sun,Evgeny Y. Tsymbal###
(1781943, 1781943)
 Here, we demonstrate that these globallyspin-neutral currents can represent the Neel spin currents, i.e.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Néel Spin Currents in Antiferromagnets|Ding-Fu Shao,Yuan-Yuan Jiang,Jun Ding,Shu-Hui Zhang,Zi-An Wang,Rui-Chun Xiao,Gautam Gurung,W. J. Lu,Y. P. Sun,Evgeny Y. Tsymbal###
(1781976, 1781976)
 The Neel spincurrents emerge in antiferromagnets with strong intra-sublattice coupling(hopping) and drive the spin-dependent transport phenomena such as tunnelingmagnetoresistance (TMR) and spin-transfer torque (STT) in antiferromagnetictunnel junctions (AFMTJs).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Néel Spin Currents in Antiferromagnets|Ding-Fu Shao,Yuan-Yuan Jiang,Jun Ding,Shu-Hui Zhang,Zi-An Wang,Rui-Chun Xiao,Gautam Gurung,W. J. Lu,Y. P. Sun,Evgeny Y. Tsymbal###
(1782043, 1782043)
 The Neel spincurrents emerge in antiferromagnets with strong intra-sublattice coupling(hopping) and drive the spin-dependent transport phenomena such as tunnelingmagnetoresistance (TMR) and spin-transfer torque (STT) in antiferromagnetictunnel junctions (AFMTJs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Néel Spin Currents in Antiferromagnets|Ding-Fu Shao,Yuan-Yuan Jiang,Jun Ding,Shu-Hui Zhang,Zi-An Wang,Rui-Chun Xiao,Gautam Gurung,W. J. Lu,Y. P. Sun,Evgeny Y. Tsymbal###
(1782059, 1782059)
 The Neel spincurrents emerge in antiferromagnets with strong intra-sublattice coupling(hopping) and drive the spin-dependent transport phenomena such as tunnelingmagnetoresistance (TMR) and spin-transfer torque (STT) in antiferromagnetictunnel junctions (AFMTJs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

RuO2
###Néel Spin Currents in Antiferromagnets|Ding-Fu Shao,Yuan-Yuan Jiang,Jun Ding,Shu-Hui Zhang,Zi-An Wang,Rui-Chun Xiao,Gautam Gurung,W. J. Lu,Y. P. Sun,Evgeny Y. Tsymbal###
(1782068, 1782070)
 Using RuO2 and Fe4GeTe2 asrepresentative antiferromagnets, we predict that the Neel spin currents witha strong staggered spin-polarization produce a sizable field-like STT capableof the deterministic switching of the Neel vector in the associated AFMTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe4GeTe2
###Néel Spin Currents in Antiferromagnets|Ding-Fu Shao,Yuan-Yuan Jiang,Jun Ding,Shu-Hui Zhang,Zi-An Wang,Rui-Chun Xiao,Gautam Gurung,W. J. Lu,Y. P. Sun,Evgeny Y. Tsymbal###
(1782074, 1782078)
 Using RuO2 and Fe4GeTe2 asrepresentative antiferromagnets, we predict that the Neel spin currents witha strong staggered spin-polarization produce a sizable field-like STT capableof the deterministic switching of the Neel vector in the associated AFMTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Néel Spin Currents in Antiferromagnets|Ding-Fu Shao,Yuan-Yuan Jiang,Jun Ding,Shu-Hui Zhang,Zi-An Wang,Rui-Chun Xiao,Gautam Gurung,W. J. Lu,Y. P. Sun,Evgeny Y. Tsymbal###
(1782096, 1782096)
 Using RuO2 and Fe4GeTe2 asrepresentative antiferromagnets, we predict that the Neel spin currents witha strong staggered spin-polarization produce a sizable field-like STT capableof the deterministic switching of the Neel vector in the associated AFMTJs.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Néel Spin Currents in Antiferromagnets|Ding-Fu Shao,Yuan-Yuan Jiang,Jun Ding,Shu-Hui Zhang,Zi-An Wang,Rui-Chun Xiao,Gautam Gurung,W. J. Lu,Y. P. Sun,Evgeny Y. Tsymbal###
(1782126, 1782126)
 Using RuO2 and Fe4GeTe2 asrepresentative antiferromagnets, we predict that the Neel spin currents witha strong staggered spin-polarization produce a sizable field-like STT capableof the deterministic switching of the Neel vector in the associated AFMTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Néel Spin Currents in Antiferromagnets|Ding-Fu Shao,Yuan-Yuan Jiang,Jun Ding,Shu-Hui Zhang,Zi-An Wang,Rui-Chun Xiao,Gautam Gurung,W. J. Lu,Y. P. Sun,Evgeny Y. Tsymbal###
(1782145, 1782145)
 Using RuO2 and Fe4GeTe2 asrepresentative antiferromagnets, we predict that the Neel spin currents witha strong staggered spin-polarization produce a sizable field-like STT capableof the deterministic switching of the Neel vector in the associated AFMTJs.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Néel Spin Currents in Antiferromagnets|Ding-Fu Shao,Yuan-Yuan Jiang,Jun Ding,Shu-Hui Zhang,Zi-An Wang,Rui-Chun Xiao,Gautam Gurung,W. J. Lu,Y. P. Sun,Evgeny Y. Tsymbal###
(1782157, 1782157)
 Using RuO2 and Fe4GeTe2 asrepresentative antiferromagnets, we predict that the Neel spin currents witha strong staggered spin-polarization produce a sizable field-like STT capableof the deterministic switching of the Neel vector in the associated AFMTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SnBi2Te4
###Unconventional topological phase transition from semimetal to insulator in SnBi2Te4: Role of anomalous thermal expansion|T. K. Dalui,B. Das,C. K. Barman,P. K. Ghose,A. Sarma,S. K. Mahatha,F. Diekmann,K. Rossnagel,S. Majumdar,A. Alam,S. Giri###
(1782249, 1782253)
Unconventional topological phase transition from semimetal to insulator in SnBi2Te4 Role of anomalous thermal expansion.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[241.0, 100, 'K', 4],[295.0, 15, 'K', 5]

SnBi2Te4
###Unconventional topological phase transition from semimetal to insulator in SnBi2Te4: Role of anomalous thermal expansion|T. K. Dalui,B. Das,C. K. Barman,P. K. Ghose,A. Sarma,S. K. Mahatha,F. Diekmann,K. Rossnagel,S. Majumdar,A. Alam,S. Giri###
(1782270, 1782274)
 We propose SnBi2Te4 to be a novel candidate material exhibiting temperature(T) mediated transitions between rich topological phases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[220.0, 100, 'K', 3],[274.0, 15, 'K', 4]

SnBi2Te4
###Unconventional topological phase transition from semimetal to insulator in SnBi2Te4: Role of anomalous thermal expansion|T. K. Dalui,B. Das,C. K. Barman,P. K. Ghose,A. Sarma,S. K. Mahatha,F. Diekmann,K. Rossnagel,S. Majumdar,A. Alam,S. Giri###
(1782332, 1782336)
 From a combinedtheoretical and experimental studies, we find that SnBi2Te4 goes from a low-T<missing VAR>topological semimetallic phase to a high-T<missing VAR> (room temperature) topologicalinsulating phase via an intermediate topological metallic phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 100, 'K', 2],[212.0, 15, 'K', 3]

SnBi2Te4
###Unconventional topological phase transition from semimetal to insulator in SnBi2Te4: Role of anomalous thermal expansion|T. K. Dalui,B. Das,C. K. Barman,P. K. Ghose,A. Sarma,S. K. Mahatha,F. Diekmann,K. Rossnagel,S. Majumdar,A. Alam,S. Giri###
(1782396, 1782400)
 Singlecrystals of SnBi2Te4 are characterized by various experimental probes includingSynchrotron based X<missing VAR>-ray diffraction, magnetoresistance, Hall effect, Seebeckcoefficient, magnetization and angle-resolved photoemission spectroscopy(ARPES).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 100, 'K', 1],[148.0, 15, 'K', 2]

S
###Unconventional topological phase transition from semimetal to insulator in SnBi2Te4: Role of anomalous thermal expansion|T. K. Dalui,B. Das,C. K. Barman,P. K. Ghose,A. Sarma,S. K. Mahatha,F. Diekmann,K. Rossnagel,S. Majumdar,A. Alam,S. Giri###
(1782460, 1782460)
 Singlecrystals of SnBi2Te4 are characterized by various experimental probes includingSynchrotron based X<missing VAR>-ray diffraction, magnetoresistance, Hall effect, Seebeckcoefficient, magnetization and angle-resolved photoemission spectroscopy(ARPES).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 100, 'K', 1],[88.0, 15, 'K', 2]

S
###Unconventional topological phase transition from semimetal to insulator in SnBi2Te4: Role of anomalous thermal expansion|T. K. Dalui,B. Das,C. K. Barman,P. K. Ghose,A. Sarma,S. K. Mahatha,F. Diekmann,K. Rossnagel,S. Majumdar,A. Alam,S. Giri###
(1782565, 1782565)
 Simulated surface states at 15 K agree fairlywell with our ARPES data and are found to be robust with varying T<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 100, 'K', 1],[17.0, 15, 'K', 0]

YbRh2Si2
###Microstructuring YbRh2Si2 for resistance and noise measurements down to ultra-low temperatures|Alexander Steppke,Sandra Hamann,Markus König,Andrew P. Mackenzie,Kristin Kliemt,Cornelius Krellner,Marvin Kopp,Martin Lonsky,Jens Müller,Lev V. Levitin,John Saunders,Manuel Brando###
(1782687, 1782691)
Microstructuring YbRh2Si2 for resistance and noise measurements down to ultra-low temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 2, 'mK', 1],[256.0, 13, 'T', 3],[259.0, 18, 'T', 3],[278.0, 0.39, 'kT', 3],[365.0, 67, 'mK', 5],[434.0, 0.95, 'mK', 6],[453.0, 1.2, 'mK', 6]

YbRh2Si2
###Microstructuring YbRh2Si2 for resistance and noise measurements down to ultra-low temperatures|Alexander Steppke,Sandra Hamann,Markus König,Andrew P. Mackenzie,Kristin Kliemt,Cornelius Krellner,Marvin Kopp,Martin Lonsky,Jens Müller,Lev V. Levitin,John Saunders,Manuel Brando###
(1782737, 1782741)
 The discovery of superconductivity in the quantum critical Kondo-latticesystem YbRh2Si2 at an extremely low temperature of 2 mK has inspired efforts toperform high-resolution electrical resistivity measurements down to thistemperature range in highly conductive materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 2, 'mK', 0],[206.0, 13, 'T', 2],[209.0, 18, 'T', 2],[228.0, 0.39, 'kT', 2],[315.0, 67, 'mK', 4],[384.0, 0.95, 'mK', 5],[403.0, 1.2, 'mK', 5]

(FIB)
###Microstructuring YbRh2Si2 for resistance and noise measurements down to ultra-low temperatures|Alexander Steppke,Sandra Hamann,Markus König,Andrew P. Mackenzie,Kristin Kliemt,Cornelius Krellner,Marvin Kopp,Martin Lonsky,Jens Müller,Lev V. Levitin,John Saunders,Manuel Brando###
(1782828, 1782832)
 Here we show that controlover the sample geometry by microstructuring using focused-ion-beam (FIB)techniques allows to reach ultra-low temperatures and increase signal-to-noiseratios (SNR) tenfold, without adverse effects to sample quality.
Featurization successful!
0,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 2, 'mK', 1],[115.0, 13, 'T', 1],[118.0, 18, 'T', 1],[137.0, 0.39, 'kT', 1],[224.0, 67, 'mK', 3],[293.0, 0.95, 'mK', 4],[312.0, 1.2, 'mK', 4]

SN
###Microstructuring YbRh2Si2 for resistance and noise measurements down to ultra-low temperatures|Alexander Steppke,Sandra Hamann,Markus König,Andrew P. Mackenzie,Kristin Kliemt,Cornelius Krellner,Marvin Kopp,Martin Lonsky,Jens Müller,Lev V. Levitin,John Saunders,Manuel Brando###
(1782863, 1782864)
 Here we show that controlover the sample geometry by microstructuring using focused-ion-beam (FIB)techniques allows to reach ultra-low temperatures and increase signal-to-noiseratios (SNR) tenfold, without adverse effects to sample quality.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 2, 'mK', 1],[83.0, 13, 'T', 1],[86.0, 18, 'T', 1],[105.0, 0.39, 'kT', 1],[192.0, 67, 'mK', 3],[261.0, 0.95, 'mK', 4],[280.0, 1.2, 'mK', 4]

In
###Microstructuring YbRh2Si2 for resistance and noise measurements down to ultra-low temperatures|Alexander Steppke,Sandra Hamann,Markus König,Andrew P. Mackenzie,Kristin Kliemt,Cornelius Krellner,Marvin Kopp,Martin Lonsky,Jens Müller,Lev V. Levitin,John Saunders,Manuel Brando###
(1782884, 1782884)
 In fiveexperiments we show four-terminal sensing resistance and magnetoresistancemeasurements which exhibit sharp phase transitions at the Neel temperature,and Shubnikov-de-Haas (SdH) oscillations between 13 T and 18 T where weidentified a new SdH frequency of 0.39 kT.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 2, 'mK', 2],[63.0, 13, 'T', 0],[66.0, 18, 'T', 0],[85.0, 0.39, 'kT', 0],[172.0, 67, 'mK', 2],[241.0, 0.95, 'mK', 3],[260.0, 1.2, 'mK', 3]

N
###Microstructuring YbRh2Si2 for resistance and noise measurements down to ultra-low temperatures|Alexander Steppke,Sandra Hamann,Markus König,Andrew P. Mackenzie,Kristin Kliemt,Cornelius Krellner,Marvin Kopp,Martin Lonsky,Jens Müller,Lev V. Levitin,John Saunders,Manuel Brando###
(1782924, 1782924)
 In fiveexperiments we show four-terminal sensing resistance and magnetoresistancemeasurements which exhibit sharp phase transitions at the Neel temperature,and Shubnikov-de-Haas (SdH) oscillations between 13 T and 18 T where weidentified a new SdH frequency of 0.39 kT.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[170.0, 2, 'mK', 2],[23.0, 13, 'T', 0],[26.0, 18, 'T', 0],[45.0, 0.39, 'kT', 0],[132.0, 67, 'mK', 2],[201.0, 0.95, 'mK', 3],[220.0, 1.2, 'mK', 3]

H
###Microstructuring YbRh2Si2 for resistance and noise measurements down to ultra-low temperatures|Alexander Steppke,Sandra Hamann,Markus König,Andrew P. Mackenzie,Kristin Kliemt,Cornelius Krellner,Marvin Kopp,Martin Lonsky,Jens Müller,Lev V. Levitin,John Saunders,Manuel Brando###
(1782941, 1782941)
 In fiveexperiments we show four-terminal sensing resistance and magnetoresistancemeasurements which exhibit sharp phase transitions at the Neel temperature,and Shubnikov-de-Haas (SdH) oscillations between 13 T and 18 T where weidentified a new SdH frequency of 0.39 kT.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[187.0, 2, 'mK', 2],[6.0, 13, 'T', 0],[9.0, 18, 'T', 0],[28.0, 0.39, 'kT', 0],[115.0, 67, 'mK', 2],[184.0, 0.95, 'mK', 3],[203.0, 1.2, 'mK', 3]

H
###Microstructuring YbRh2Si2 for resistance and noise measurements down to ultra-low temperatures|Alexander Steppke,Sandra Hamann,Markus König,Andrew P. Mackenzie,Kristin Kliemt,Cornelius Krellner,Marvin Kopp,Martin Lonsky,Jens Müller,Lev V. Levitin,John Saunders,Manuel Brando###
(1782964, 1782964)
 In fiveexperiments we show four-terminal sensing resistance and magnetoresistancemeasurements which exhibit sharp phase transitions at the Neel temperature,and Shubnikov-de-Haas (SdH) oscillations between 13 T and 18 T where weidentified a new SdH frequency of 0.39 kT.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[210.0, 2, 'mK', 2],[17.0, 13, 'T', 0],[14.0, 18, 'T', 0],[5.0, 0.39, 'kT', 0],[92.0, 67, 'mK', 2],[161.0, 0.95, 'mK', 3],[180.0, 1.2, 'mK', 3]

SN
###Microstructuring YbRh2Si2 for resistance and noise measurements down to ultra-low temperatures|Alexander Steppke,Sandra Hamann,Markus König,Andrew P. Mackenzie,Kristin Kliemt,Cornelius Krellner,Marvin Kopp,Martin Lonsky,Jens Müller,Lev V. Levitin,John Saunders,Manuel Brando###
(1782976, 1782977)
 The increased SNR<missing VAR> allowed resistancefluctuation (noise) spectroscopy that would not be possible for bulk crystals,and confirmed intrinsic 1/f<missing VAR>-type fluctuations.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[222.0, 2, 'mK', 3],[29.0, 13, 'T', 1],[26.0, 18, 'T', 1],[7.0, 0.39, 'kT', 1],[79.0, 67, 'mK', 1],[148.0, 0.95, 'mK', 2],[167.0, 1.2, 'mK', 2]

N
###Microstructuring YbRh2Si2 for resistance and noise measurements down to ultra-low temperatures|Alexander Steppke,Sandra Hamann,Markus König,Andrew P. Mackenzie,Kristin Kliemt,Cornelius Krellner,Marvin Kopp,Martin Lonsky,Jens Müller,Lev V. Levitin,John Saunders,Manuel Brando###
(1783053, 1783053)
 Under controlled strain, twothin microstructured samples exhibited a large increase of T<missing VAR>N from 67 mK up to188 m<missing VAR>K while still showing clear signatures of the phase transition and SdHoscillations.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[299.0, 2, 'mK', 4],[106.0, 13, 'T', 2],[103.0, 18, 'T', 2],[84.0, 0.39, 'kT', 2],[3.0, 67, 'mK', 0],[72.0, 0.95, 'mK', 1],[91.0, 1.2, 'mK', 1]

K
###Microstructuring YbRh2Si2 for resistance and noise measurements down to ultra-low temperatures|Alexander Steppke,Sandra Hamann,Markus König,Andrew P. Mackenzie,Kristin Kliemt,Cornelius Krellner,Marvin Kopp,Martin Lonsky,Jens Müller,Lev V. Levitin,John Saunders,Manuel Brando###
(1783066, 1783066)
 Under controlled strain, twothin microstructured samples exhibited a large increase of T<missing VAR>N from 67 mK up to188 m<missing VAR>K while still showing clear signatures of the phase transition and SdHoscillations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[312.0, 2, 'mK', 4],[119.0, 13, 'T', 2],[116.0, 18, 'T', 2],[97.0, 0.39, 'kT', 2],[10.0, 67, 'mK', 0],[59.0, 0.95, 'mK', 1],[78.0, 1.2, 'mK', 1]

H
###Microstructuring YbRh2Si2 for resistance and noise measurements down to ultra-low temperatures|Alexander Steppke,Sandra Hamann,Markus König,Andrew P. Mackenzie,Kristin Kliemt,Cornelius Krellner,Marvin Kopp,Martin Lonsky,Jens Müller,Lev V. Levitin,John Saunders,Manuel Brando###
(1783089, 1783089)
 Under controlled strain, twothin microstructured samples exhibited a large increase of T<missing VAR>N from 67 mK up to188 m<missing VAR>K while still showing clear signatures of the phase transition and SdHoscillations.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[335.0, 2, 'mK', 4],[142.0, 13, 'T', 2],[139.0, 18, 'T', 2],[120.0, 0.39, 'kT', 2],[33.0, 67, 'mK', 0],[36.0, 0.95, 'mK', 1],[55.0, 1.2, 'mK', 1]

S
###Microstructuring YbRh2Si2 for resistance and noise measurements down to ultra-low temperatures|Alexander Steppke,Sandra Hamann,Markus König,Andrew P. Mackenzie,Kristin Kliemt,Cornelius Krellner,Marvin Kopp,Martin Lonsky,Jens Müller,Lev V. Levitin,John Saunders,Manuel Brando###
(1783095, 1783095)
 SQ<missing VAR>UID<missing VAR>-based thermal noise spectroscopy measurements in a nucleardemagnetisation refrigerator down to 0.95 mK, show a sharp superconductingtransition at Tc  1.2 mK.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[341.0, 2, 'mK', 5],[148.0, 13, 'T', 3],[145.0, 18, 'T', 3],[126.0, 0.39, 'kT', 3],[39.0, 67, 'mK', 1],[30.0, 0.95, 'mK', 0],[49.0, 1.2, 'mK', 0]

UI
###Microstructuring YbRh2Si2 for resistance and noise measurements down to ultra-low temperatures|Alexander Steppke,Sandra Hamann,Markus König,Andrew P. Mackenzie,Kristin Kliemt,Cornelius Krellner,Marvin Kopp,Martin Lonsky,Jens Müller,Lev V. Levitin,John Saunders,Manuel Brando###
(1783097, 1783098)
 SQ<missing VAR>UID<missing VAR>-based thermal noise spectroscopy measurements in a nucleardemagnetisation refrigerator down to 0.95 mK, show a sharp superconductingtransition at Tc  1.2 mK.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
[343.0, 2, 'mK', 5],[150.0, 13, 'T', 3],[147.0, 18, 'T', 3],[128.0, 0.39, 'kT', 3],[41.0, 67, 'mK', 1],[27.0, 0.95, 'mK', 0],[46.0, 1.2, 'mK', 0]

C
###Domain Wall-Magnetic Tunnel Junction Analog Content Addressable Memory Using Current and Projected Data|Harrison Jin,Hanqing Zhu,Keren Zhu,Thomas Leonard,Jaesuk Kwon,Mahshid Alamdar,Kwangseok Kim,Jungsik Park,Naoki Hase,David Z. Pan,Jean Anne C. Incorvia###
(1783299, 1783299)
 Analog content-addressable memories (ACAM) are beingrecently studied for in-memory computing to efficiently convert between analogand digital signals.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Domain Wall-Magnetic Tunnel Junction Analog Content Addressable Memory Using Current and Projected Data|Harrison Jin,Hanqing Zhu,Keren Zhu,Thomas Leonard,Jaesuk Kwon,Mahshid Alamdar,Kwangseok Kim,Jungsik Park,Naoki Hase,David Z. Pan,Jean Anne C. Incorvia###
(1783371, 1783371)
 Magnetic memory elements such as magnetic tunnel junctions(MTJs) could be useful for ACAM<missing VAR> due to their low read/write energy and highendurance, but MTJs are usually restricted to digital values.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Domain Wall-Magnetic Tunnel Junction Analog Content Addressable Memory Using Current and Projected Data|Harrison Jin,Hanqing Zhu,Keren Zhu,Thomas Leonard,Jaesuk Kwon,Mahshid Alamdar,Kwangseok Kim,Jungsik Park,Naoki Hase,David Z. Pan,Jean Anne C. Incorvia###
(1783439, 1783439)
 The spin orbittorque-driven domain wall-magnetic tunnel junction (D<missing VAR>W-MTJ) has been recentlyshown to have multi-bit function.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Domain Wall-Magnetic Tunnel Junction Analog Content Addressable Memory Using Current and Projected Data|Harrison Jin,Hanqing Zhu,Keren Zhu,Thomas Leonard,Jaesuk Kwon,Mahshid Alamdar,Kwangseok Kim,Jungsik Park,Naoki Hase,David Z. Pan,Jean Anne C. Incorvia###
(1783472, 1783472)
 Here, an ACAM<missing VAR> circuit is studied that usestwo domain wall-magnetic tunnel junctions (D<missing VAR>W-MTJs) as the analog storageelements.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Domain Wall-Magnetic Tunnel Junction Analog Content Addressable Memory Using Current and Projected Data|Harrison Jin,Hanqing Zhu,Keren Zhu,Thomas Leonard,Jaesuk Kwon,Mahshid Alamdar,Kwangseok Kim,Jungsik Park,Naoki Hase,David Z. Pan,Jean Anne C. Incorvia###
(1783501, 1783501)
 Here, an ACAM<missing VAR> circuit is studied that usestwo domain wall-magnetic tunnel junctions (D<missing VAR>W-MTJs) as the analog storageelements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Domain Wall-Magnetic Tunnel Junction Analog Content Addressable Memory Using Current and Projected Data|Harrison Jin,Hanqing Zhu,Keren Zhu,Thomas Leonard,Jaesuk Kwon,Mahshid Alamdar,Kwangseok Kim,Jungsik Park,Naoki Hase,David Z. Pan,Jean Anne C. Incorvia###
(1783523, 1783523)
 Prototype D<missing VAR>W-MTJ data is input into the magnetic ACAM<missing VAR> (M<missing VAR>ACAM) circuitsimulation, showing ternary CAM<missing VAR> function.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Domain Wall-Magnetic Tunnel Junction Analog Content Addressable Memory Using Current and Projected Data|Harrison Jin,Hanqing Zhu,Keren Zhu,Thomas Leonard,Jaesuk Kwon,Mahshid Alamdar,Kwangseok Kim,Jungsik Park,Naoki Hase,David Z. Pan,Jean Anne C. Incorvia###
(1783542, 1783542)
 Prototype D<missing VAR>W-MTJ data is input into the magnetic ACAM<missing VAR> (M<missing VAR>ACAM) circuitsimulation, showing ternary CAM<missing VAR> function.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Domain Wall-Magnetic Tunnel Junction Analog Content Addressable Memory Using Current and Projected Data|Harrison Jin,Hanqing Zhu,Keren Zhu,Thomas Leonard,Jaesuk Kwon,Mahshid Alamdar,Kwangseok Kim,Jungsik Park,Naoki Hase,David Z. Pan,Jean Anne C. Incorvia###
(1783549, 1783549)
 Prototype D<missing VAR>W-MTJ data is input into the magnetic ACAM<missing VAR> (M<missing VAR>ACAM) circuitsimulation, showing ternary CAM<missing VAR> function.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Domain Wall-Magnetic Tunnel Junction Analog Content Addressable Memory Using Current and Projected Data|Harrison Jin,Hanqing Zhu,Keren Zhu,Thomas Leonard,Jaesuk Kwon,Mahshid Alamdar,Kwangseok Kim,Jungsik Park,Naoki Hase,David Z. Pan,Jean Anne C. Incorvia###
(1783564, 1783564)
 Prototype D<missing VAR>W-MTJ data is input into the magnetic ACAM<missing VAR> (M<missing VAR>ACAM) circuitsimulation, showing ternary CAM<missing VAR> function.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Domain Wall-Magnetic Tunnel Junction Analog Content Addressable Memory Using Current and Projected Data|Harrison Jin,Hanqing Zhu,Keren Zhu,Thomas Leonard,Jaesuk Kwon,Mahshid Alamdar,Kwangseok Kim,Jungsik Park,Naoki Hase,David Z. Pan,Jean Anne C. Incorvia###
(1783622, 1783622)
 Device-circuit co-design is carriedout, showing that 8-10 weight bits are achievable, and that designingasymmetrical spacing of the available D<missing VAR>W positions in the device leads toevenly spaced ACAM<missing VAR> search bounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Domain Wall-Magnetic Tunnel Junction Analog Content Addressable Memory Using Current and Projected Data|Harrison Jin,Hanqing Zhu,Keren Zhu,Thomas Leonard,Jaesuk Kwon,Mahshid Alamdar,Kwangseok Kim,Jungsik Park,Naoki Hase,David Z. Pan,Jean Anne C. Incorvia###
(1783642, 1783642)
 Device-circuit co-design is carriedout, showing that 8-10 weight bits are achievable, and that designingasymmetrical spacing of the available D<missing VAR>W positions in the device leads toevenly spaced ACAM<missing VAR> search bounds.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Domain Wall-Magnetic Tunnel Junction Analog Content Addressable Memory Using Current and Projected Data|Harrison Jin,Hanqing Zhu,Keren Zhu,Thomas Leonard,Jaesuk Kwon,Mahshid Alamdar,Kwangseok Kim,Jungsik Park,Naoki Hase,David Z. Pan,Jean Anne C. Incorvia###
(1783676, 1783676)
 Analyzing available spin orbit torquematerials shows platinum provides the largest M<missing VAR>ACAM<missing VAR> search bound while stillallowing spin orbit torque domain wall motion, and that the circuit isoptimized with minimized MTJ resistance, minimized spin orbit torque materialresistance, and maximized tunnel magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Domain Wall-Magnetic Tunnel Junction Analog Content Addressable Memory Using Current and Projected Data|Harrison Jin,Hanqing Zhu,Keren Zhu,Thomas Leonard,Jaesuk Kwon,Mahshid Alamdar,Kwangseok Kim,Jungsik Park,Naoki Hase,David Z. Pan,Jean Anne C. Incorvia###
(1783767, 1783767)
 These results show thefeasibility of using D<missing VAR>W-MTJs for M<missing VAR>ACAM<missing VAR> and provide design parameters.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Domain Wall-Magnetic Tunnel Junction Analog Content Addressable Memory Using Current and Projected Data|Harrison Jin,Hanqing Zhu,Keren Zhu,Thomas Leonard,Jaesuk Kwon,Mahshid Alamdar,Kwangseok Kim,Jungsik Park,Naoki Hase,David Z. Pan,Jean Anne C. Incorvia###
(1783777, 1783777)
 These results show thefeasibility of using D<missing VAR>W-MTJs for M<missing VAR>ACAM<missing VAR> and provide design parameters.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoFeB/MgO/CoFeB
###Cryogenic temperature deposition of high-performance CoFeB/MgO/CoFeB magnetic tunnel junctions on 300 mm wafers|Tomohiro Ichinose,Tatsuya Yamamoto,Takayuki Nozaki,Kay Yakushiji,Shingo Tamaru,Makoto Konoto,Shinji Yuasa###
(1783810, 1783819)
Cryogenic temperature deposition of high-performance CoFeB/MgO/CoFeB magnetic tunnel junctions on 300 mm wafers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[9.0, 300, 'mm', 0],[59.0, 300, 'mm', 1],[140.0, 100, 'K', 3],[167.0, 214, 'uJ', 3],[195.0, -45, 'fJ', 3]

CoFeB/MgO/CoFeB
###Cryogenic temperature deposition of high-performance CoFeB/MgO/CoFeB magnetic tunnel junctions on 300 mm wafers|Tomohiro Ichinose,Tatsuya Yamamoto,Takayuki Nozaki,Kay Yakushiji,Shingo Tamaru,Makoto Konoto,Shinji Yuasa###
(1783854, 1783863)
 We developed a cryogenic temperature deposition process for high-performanceCoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) on 300 mm thermally oxidizedsilicon wafers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[26.0, 300, 'mm', 1],[15.0, 300, 'mm', 0],[96.0, 100, 'K', 2],[123.0, 214, 'uJ', 2],[151.0, -45, 'fJ', 2]

CoFeB
###Cryogenic temperature deposition of high-performance CoFeB/MgO/CoFeB magnetic tunnel junctions on 300 mm wafers|Tomohiro Ichinose,Tatsuya Yamamoto,Takayuki Nozaki,Kay Yakushiji,Shingo Tamaru,Makoto Konoto,Shinji Yuasa###
(1783906, 1783908)
 The effect of the deposition temperature of the CoFeB layers onthe nanostructure, magnetic and magneto-transport properties of the MTJs wereinvestigated in detail.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 300, 'mm', 2],[28.0, 300, 'mm', 1],[51.0, 100, 'K', 1],[78.0, 214, 'uJ', 1],[106.0, -45, 'fJ', 1]

CoFeB
###Cryogenic temperature deposition of high-performance CoFeB/MgO/CoFeB magnetic tunnel junctions on 300 mm wafers|Tomohiro Ichinose,Tatsuya Yamamoto,Takayuki Nozaki,Kay Yakushiji,Shingo Tamaru,Makoto Konoto,Shinji Yuasa###
(1783950, 1783952)
 When CoFeB was deposited at 100 K, the MTJs exhibited aperpendicular magnetic anisotropy (PM<missing VAR>A) of 214 uJ/m<missing VAR>2 and a voltage-controlledmagnetic anisotropy (VCM<missing VAR>A) coefficient of -45 fJ/Vm, corresponding to 1.4- and1.7-fold enhancements in PM<missing VAR>A and VCM<missing VAR>A, respectively, compared to the case ofroom-temperature deposition of CoFeB.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 300, 'mm', 3],[72.0, 300, 'mm', 2],[7.0, 100, 'K', 0],[34.0, 214, 'uJ', 0],[62.0, -45, 'fJ', 0]

P
###Cryogenic temperature deposition of high-performance CoFeB/MgO/CoFeB magnetic tunnel junctions on 300 mm wafers|Tomohiro Ichinose,Tatsuya Yamamoto,Takayuki Nozaki,Kay Yakushiji,Shingo Tamaru,Makoto Konoto,Shinji Yuasa###
(1783980, 1783980)
 When CoFeB was deposited at 100 K, the MTJs exhibited aperpendicular magnetic anisotropy (PM<missing VAR>A) of 214 uJ/m<missing VAR>2 and a voltage-controlledmagnetic anisotropy (VCM<missing VAR>A) coefficient of -45 fJ/Vm, corresponding to 1.4- and1.7-fold enhancements in PM<missing VAR>A and VCM<missing VAR>A, respectively, compared to the case ofroom-temperature deposition of CoFeB.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 300, 'mm', 3],[102.0, 300, 'mm', 2],[21.0, 100, 'K', 0],[6.0, 214, 'uJ', 0],[34.0, -45, 'fJ', 0]

VC
###Cryogenic temperature deposition of high-performance CoFeB/MgO/CoFeB magnetic tunnel junctions on 300 mm wafers|Tomohiro Ichinose,Tatsuya Yamamoto,Takayuki Nozaki,Kay Yakushiji,Shingo Tamaru,Makoto Konoto,Shinji Yuasa###
(1784005, 1784006)
 When CoFeB was deposited at 100 K, the MTJs exhibited aperpendicular magnetic anisotropy (PM<missing VAR>A) of 214 uJ/m<missing VAR>2 and a voltage-controlledmagnetic anisotropy (VCM<missing VAR>A) coefficient of -45 fJ/Vm, corresponding to 1.4- and1.7-fold enhancements in PM<missing VAR>A and VCM<missing VAR>A, respectively, compared to the case ofroom-temperature deposition of CoFeB.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[177.0, 300, 'mm', 3],[127.0, 300, 'mm', 2],[46.0, 100, 'K', 0],[19.0, 214, 'uJ', 0],[8.0, -45, 'fJ', 0]

P
###Cryogenic temperature deposition of high-performance CoFeB/MgO/CoFeB magnetic tunnel junctions on 300 mm wafers|Tomohiro Ichinose,Tatsuya Yamamoto,Takayuki Nozaki,Kay Yakushiji,Shingo Tamaru,Makoto Konoto,Shinji Yuasa###
(1784037, 1784037)
 When CoFeB was deposited at 100 K, the MTJs exhibited aperpendicular magnetic anisotropy (PM<missing VAR>A) of 214 uJ/m<missing VAR>2 and a voltage-controlledmagnetic anisotropy (VCM<missing VAR>A) coefficient of -45 fJ/Vm, corresponding to 1.4- and1.7-fold enhancements in PM<missing VAR>A and VCM<missing VAR>A, respectively, compared to the case ofroom-temperature deposition of CoFeB.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[209.0, 300, 'mm', 3],[159.0, 300, 'mm', 2],[78.0, 100, 'K', 0],[51.0, 214, 'uJ', 0],[23.0, -45, 'fJ', 0]

VC
###Cryogenic temperature deposition of high-performance CoFeB/MgO/CoFeB magnetic tunnel junctions on 300 mm wafers|Tomohiro Ichinose,Tatsuya Yamamoto,Takayuki Nozaki,Kay Yakushiji,Shingo Tamaru,Makoto Konoto,Shinji Yuasa###
(1784043, 1784044)
 When CoFeB was deposited at 100 K, the MTJs exhibited aperpendicular magnetic anisotropy (PM<missing VAR>A) of 214 uJ/m<missing VAR>2 and a voltage-controlledmagnetic anisotropy (VCM<missing VAR>A) coefficient of -45 fJ/Vm, corresponding to 1.4- and1.7-fold enhancements in PM<missing VAR>A and VCM<missing VAR>A, respectively, compared to the case ofroom-temperature deposition of CoFeB.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[215.0, 300, 'mm', 3],[165.0, 300, 'mm', 2],[84.0, 100, 'K', 0],[57.0, 214, 'uJ', 0],[29.0, -45, 'fJ', 0]

CoFeB
###Cryogenic temperature deposition of high-performance CoFeB/MgO/CoFeB magnetic tunnel junctions on 300 mm wafers|Tomohiro Ichinose,Tatsuya Yamamoto,Takayuki Nozaki,Kay Yakushiji,Shingo Tamaru,Makoto Konoto,Shinji Yuasa###
(1784071, 1784073)
 When CoFeB was deposited at 100 K, the MTJs exhibited aperpendicular magnetic anisotropy (PM<missing VAR>A) of 214 uJ/m<missing VAR>2 and a voltage-controlledmagnetic anisotropy (VCM<missing VAR>A) coefficient of -45 fJ/Vm, corresponding to 1.4- and1.7-fold enhancements in PM<missing VAR>A and VCM<missing VAR>A, respectively, compared to the case ofroom-temperature deposition of CoFeB.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[243.0, 300, 'mm', 3],[193.0, 300, 'mm', 2],[112.0, 100, 'K', 0],[85.0, 214, 'uJ', 0],[57.0, -45, 'fJ', 0]

MgO/CoFeB
###Cryogenic temperature deposition of high-performance CoFeB/MgO/CoFeB magnetic tunnel junctions on 300 mm wafers|Tomohiro Ichinose,Tatsuya Yamamoto,Takayuki Nozaki,Kay Yakushiji,Shingo Tamaru,Makoto Konoto,Shinji Yuasa###
(1784154, 1784159)
 The interface-sensitivemagneto-transport properties indicated that interfacial qualities such asintermixing and oxidation states at the MgO/CoFeB interfaces were improved bythe cryogenic temperature deposition.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[326.0, 300, 'mm', 5],[276.0, 300, 'mm', 4],[195.0, 100, 'K', 2],[168.0, 214, 'uJ', 2],[140.0, -45, 'fJ', 2]

HoBi
###Spin-orbital order and excitons in magnetoresistive HoBi|J. Gaudet,H. -Y. Yang,E. M. Smith,T. Halloran,J. P. Clancy,J. A. Rodriguez-Rivera,Guangyong Xu,Y. Zhao,W. C. Chen,G. Sala,A. A. Aczel,B. D. Gaulin,F. Tafti,C. Broholm###
(1784242, 1784243)
Spin-orbital order and excitons in magnetoresistive HoBi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

HoBi
###Spin-orbital order and excitons in magnetoresistive HoBi|J. Gaudet,H. -Y. Yang,E. M. Smith,T. Halloran,J. P. Clancy,J. A. Rodriguez-Rivera,Guangyong Xu,Y. Zhao,W. C. Chen,G. Sala,A. A. Aczel,B. D. Gaulin,F. Tafti,C. Broholm###
(1784266, 1784267)
 The magnetism of the rock-salt fcc rare-earth monopnictide HoBi, acandidate topological material with extreme magnetoresistance, is investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ho3
###Spin-orbital order and excitons in magnetoresistive HoBi|J. Gaudet,H. -Y. Yang,E. M. Smith,T. Halloran,J. P. Clancy,J. A. Rodriguez-Rivera,Guangyong Xu,Y. Zhao,W. C. Chen,G. Sala,A. A. Aczel,B. D. Gaulin,F. Tafti,C. Broholm###
(1784296, 1784297)
From the Ho3 non-Kramers J<missing VAR>8 spin-orbital multiplet, the cubic crystalelectric field yields six nearly degenerate low-energy levels.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin-orbital order and excitons in magnetoresistive HoBi|J. Gaudet,H. -Y. Yang,E. M. Smith,T. Halloran,J. P. Clancy,J. A. Rodriguez-Rivera,Guangyong Xu,Y. Zhao,W. C. Chen,G. Sala,A. A. Aczel,B. D. Gaulin,F. Tafti,C. Broholm###
(1784372, 1784372)
In the cubic phase for T>TN5.72(1)K, the paramagnetic neutron scatteringis centered at mathbfk<missing VAR>(frac12frac12frac12) and was fit todominant antiferromagnetic interactions between Ho spins separated by 100and ferromagnetic interactions between spins displaced byfrac12frac120.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N5.72
###Spin-orbital order and excitons in magnetoresistive HoBi|J. Gaudet,H. -Y. Yang,E. M. Smith,T. Halloran,J. P. Clancy,J. A. Rodriguez-Rivera,Guangyong Xu,Y. Zhao,W. C. Chen,G. Sala,A. A. Aczel,B. D. Gaulin,F. Tafti,C. Broholm###
(1784385, 1784386)
In the cubic phase for T>TN5.72(1)K, the paramagnetic neutron scatteringis centered at mathbfk<missing VAR>(frac12frac12frac12) and was fit todominant antiferromagnetic interactions between Ho spins separated by 100and ferromagnetic interactions between spins displaced byfrac12frac120.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Spin-orbital order and excitons in magnetoresistive HoBi|J. Gaudet,H. -Y. Yang,E. M. Smith,T. Halloran,J. P. Clancy,J. A. Rodriguez-Rivera,Guangyong Xu,Y. Zhao,W. C. Chen,G. Sala,A. A. Aczel,B. D. Gaulin,F. Tafti,C. Broholm###
(1784390, 1784390)
In the cubic phase for T>TN5.72(1)K, the paramagnetic neutron scatteringis centered at mathbfk<missing VAR>(frac12frac12frac12) and was fit todominant antiferromagnetic interactions between Ho spins separated by 100and ferromagnetic interactions between spins displaced byfrac12frac120.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ho
###Spin-orbital order and excitons in magnetoresistive HoBi|J. Gaudet,H. -Y. Yang,E. M. Smith,T. Halloran,J. P. Clancy,J. A. Rodriguez-Rivera,Guangyong Xu,Y. Zhao,W. C. Chen,G. Sala,A. A. Aczel,B. D. Gaulin,F. Tafti,C. Broholm###
(1784439, 1784439)
In the cubic phase for T>TN5.72(1)K, the paramagnetic neutron scatteringis centered at mathbfk<missing VAR>(frac12frac12frac12) and was fit todominant antiferromagnetic interactions between Ho spins separated by 100and ferromagnetic interactions between spins displaced byfrac12frac120.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Spin-orbital order and excitons in magnetoresistive HoBi|J. Gaudet,H. -Y. Yang,E. M. Smith,T. Halloran,J. P. Clancy,J. A. Rodriguez-Rivera,Guangyong Xu,Y. Zhao,W. C. Chen,G. Sala,A. A. Aczel,B. D. Gaulin,F. Tafti,C. Broholm###
(1784479, 1784479)
 For T<TN, a type-II AFM<missing VAR> long-range order withmathbfk<missing VAR>(frac12frac12frac12) develops along with atetragonal lattice distortion.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Spin-orbital order and excitons in magnetoresistive HoBi|J. Gaudet,H. -Y. Yang,E. M. Smith,T. Halloran,J. P. Clancy,J. A. Rodriguez-Rivera,Guangyong Xu,Y. Zhao,W. C. Chen,G. Sala,A. A. Aczel,B. D. Gaulin,F. Tafti,C. Broholm###
(1784486, 1784487)
 For T<TN, a type-II AFM<missing VAR> long-range order withmathbfk<missing VAR>(frac12frac12frac12) develops along with atetragonal lattice distortion.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Spin-orbital order and excitons in magnetoresistive HoBi|J. Gaudet,H. -Y. Yang,E. M. Smith,T. Halloran,J. P. Clancy,J. A. Rodriguez-Rivera,Guangyong Xu,Y. Zhao,W. C. Chen,G. Sala,A. A. Aczel,B. D. Gaulin,F. Tafti,C. Broholm###
(1784490, 1784490)
 For T<TN, a type-II AFM<missing VAR> long-range order withmathbfk<missing VAR>(frac12frac12frac12) develops along with atetragonal lattice distortion.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Spin-orbital order and excitons in magnetoresistive HoBi|J. Gaudet,H. -Y. Yang,E. M. Smith,T. Halloran,J. P. Clancy,J. A. Rodriguez-Rivera,Guangyong Xu,Y. Zhao,W. C. Chen,G. Sala,A. A. Aczel,B. D. Gaulin,F. Tafti,C. Broholm###
(1784631, 1784631)
 Theweakly dispersive excitons for T<TN can be accounted for by a spinHamiltonian that includes the crystal electric field and exchange interactionswithin the Random Phase Approximation.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Debye temperature, electron-phonon coupling constant, and moderate nonadiabaticity in highly-compressed I-43d-TaH3 superconductor|E. F. Talantsev###
(1784714, 1784714)
Debye temperature, electron-phonon coupling constant, and moderate nonadiabaticity in highly-compressed I-43d<missing VAR>-TaH3 superconductor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[170.0, 11, 'Tesla', 3],[278.0, 1.53, ';', 4],[318.0, 0.19, ';', 4]

TaH3
###Debye temperature, electron-phonon coupling constant, and moderate nonadiabaticity in highly-compressed I-43d-TaH3 superconductor|E. F. Talantsev###
(1784719, 1784721)
Debye temperature, electron-phonon coupling constant, and moderate nonadiabaticity in highly-compressed I-43d<missing VAR>-TaH3 superconductor.
Featurization terminated normally.
0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 11, 'Tesla', 3],[271.0, 1.53, ';', 4],[311.0, 0.19, ';', 4]

He
###Debye temperature, electron-phonon coupling constant, and moderate nonadiabaticity in highly-compressed I-43d-TaH3 superconductor|E. F. Talantsev###
(1784729, 1784729)
 Recently, He et al (arXiv2212.13739 (2022)) reported on the discovery ofhigh-temperature superconductivity in highly-compressed polyhydride oftantalum.
Featurization terminated normally.
0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 11, 'Tesla', 2],[263.0, 1.53, ';', 3],[303.0, 0.19, ';', 3]

At
###Debye temperature, electron-phonon coupling constant, and moderate nonadiabaticity in highly-compressed I-43d-TaH3 superconductor|E. F. Talantsev###
(1784776, 1784776)
 At pressure it P197 G<missing VAR>Pa, the polyhydride I-43d<missing VAR>-phase of TaH3exhibits zero-resistance transition temperature Tc,zero25.6 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 11, 'Tesla', 1],[216.0, 1.53, ';', 2],[256.0, 0.19, ';', 2]

P197
###Debye temperature, electron-phonon coupling constant, and moderate nonadiabaticity in highly-compressed I-43d-TaH3 superconductor|E. F. Talantsev###
(1784782, 1784783)
 At pressure it P197 G<missing VAR>Pa, the polyhydride I-43d<missing VAR>-phase of TaH3exhibits zero-resistance transition temperature Tc,zero25.6 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 11, 'Tesla', 1],[209.0, 1.53, ';', 2],[249.0, 0.19, ';', 2]

Pa
###Debye temperature, electron-phonon coupling constant, and moderate nonadiabaticity in highly-compressed I-43d-TaH3 superconductor|E. F. Talantsev###
(1784786, 1784786)
 At pressure it P197 G<missing VAR>Pa, the polyhydride I-43d<missing VAR>-phase of TaH3exhibits zero-resistance transition temperature Tc,zero25.6 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 11, 'Tesla', 1],[206.0, 1.53, ';', 2],[246.0, 0.19, ';', 2]

I
###Debye temperature, electron-phonon coupling constant, and moderate nonadiabaticity in highly-compressed I-43d-TaH3 superconductor|E. F. Talantsev###
(1784793, 1784793)
 At pressure it P197 G<missing VAR>Pa, the polyhydride I-43d<missing VAR>-phase of TaH3exhibits zero-resistance transition temperature Tc,zero25.6 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 11, 'Tesla', 1],[199.0, 1.53, ';', 2],[239.0, 0.19, ';', 2]

TaH3
###Debye temperature, electron-phonon coupling constant, and moderate nonadiabaticity in highly-compressed I-43d-TaH3 superconductor|E. F. Talantsev###
(1784802, 1784804)
 At pressure it P197 G<missing VAR>Pa, the polyhydride I-43d<missing VAR>-phase of TaH3exhibits zero-resistance transition temperature Tc,zero25.6 K.
Featurization terminated normally.
0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 11, 'Tesla', 1],[188.0, 1.53, ';', 2],[228.0, 0.19, ';', 2]

K
###Debye temperature, electron-phonon coupling constant, and moderate nonadiabaticity in highly-compressed I-43d-TaH3 superconductor|E. F. Talantsev###
(1784823, 1784823)
 At pressure it P197 G<missing VAR>Pa, the polyhydride I-43d<missing VAR>-phase of TaH3exhibits zero-resistance transition temperature Tc,zero25.6 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 11, 'Tesla', 1],[169.0, 1.53, ';', 2],[209.0, 0.19, ';', 2]

B
###Debye temperature, electron-phonon coupling constant, and moderate nonadiabaticity in highly-compressed I-43d-TaH3 superconductor|E. F. Talantsev###
(1784877, 1784877)
Measurements of the low-temperature magnetoresistance showed that thissuperconductor has the ground state upper critical field (defined by the zeroresistance criterion) Bc<missing VAR>2(0)  11 Tesla.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 11, 'Tesla', 0],[115.0, 1.53, ';', 1],[155.0, 0.19, ';', 1]

He
###Debye temperature, electron-phonon coupling constant, and moderate nonadiabaticity in highly-compressed I-43d-TaH3 superconductor|E. F. Talantsev###
(1784911, 1784911)
 Here, we performed detailedanalysis of the reported experimental data by He et al (arXiv2212.13739 (2022))and deduced several parameters of the I-43d<missing VAR>-phase of TaH3 (a) the Debyetemperature, T<missing VAR>theta263 K, (b) the electron-phonon coupling constant,lambdae<missing VAR>-ph1.53; (c) the Fermi temperature T<missing VAR>F1324 K; (d) thestrength of nonadiabaticity, T<missing VAR>theta/T<missing VAR>F 0.19; (e) and the ratio ofTc/T<missing VAR>F 0.0185  which implies that I-43d<missing VAR>-phase of TaH3 falls inunconventional superconductors band in the Uemura plot.
Featurization terminated normally.
0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 11, 'Tesla', 1],[81.0, 1.53, ';', 0],[121.0, 0.19, ';', 0]

I
###Debye temperature, electron-phonon coupling constant, and moderate nonadiabaticity in highly-compressed I-43d-TaH3 superconductor|E. F. Talantsev###
(1784940, 1784940)
 Here, we performed detailedanalysis of the reported experimental data by He et al (arXiv2212.13739 (2022))and deduced several parameters of the I-43d<missing VAR>-phase of TaH3 (a) the Debyetemperature, T<missing VAR>theta263 K, (b) the electron-phonon coupling constant,lambdae<missing VAR>-ph1.53; (c) the Fermi temperature T<missing VAR>F1324 K; (d) thestrength of nonadiabaticity, T<missing VAR>theta/T<missing VAR>F 0.19; (e) and the ratio ofTc/T<missing VAR>F 0.0185  which implies that I-43d<missing VAR>-phase of TaH3 falls inunconventional superconductors band in the Uemura plot.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 11, 'Tesla', 1],[52.0, 1.53, ';', 0],[92.0, 0.19, ';', 0]

TaH3
###Debye temperature, electron-phonon coupling constant, and moderate nonadiabaticity in highly-compressed I-43d-TaH3 superconductor|E. F. Talantsev###
(1784949, 1784951)
 Here, we performed detailedanalysis of the reported experimental data by He et al (arXiv2212.13739 (2022))and deduced several parameters of the I-43d<missing VAR>-phase of TaH3 (a) the Debyetemperature, T<missing VAR>theta263 K, (b) the electron-phonon coupling constant,lambdae<missing VAR>-ph1.53; (c) the Fermi temperature T<missing VAR>F1324 K; (d) thestrength of nonadiabaticity, T<missing VAR>theta/T<missing VAR>F 0.19; (e) and the ratio ofTc/T<missing VAR>F 0.0185  which implies that I-43d<missing VAR>-phase of TaH3 falls inunconventional superconductors band in the Uemura plot.
Featurization terminated normally.
0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 11, 'Tesla', 1],[41.0, 1.53, ';', 0],[81.0, 0.19, ';', 0]

K
###Debye temperature, electron-phonon coupling constant, and moderate nonadiabaticity in highly-compressed I-43d-TaH3 superconductor|E. F. Talantsev###
(1784969, 1784969)
 Here, we performed detailedanalysis of the reported experimental data by He et al (arXiv2212.13739 (2022))and deduced several parameters of the I-43d<missing VAR>-phase of TaH3 (a) the Debyetemperature, T<missing VAR>theta263 K, (b) the electron-phonon coupling constant,lambdae<missing VAR>-ph1.53; (c) the Fermi temperature T<missing VAR>F1324 K; (d) thestrength of nonadiabaticity, T<missing VAR>theta/T<missing VAR>F 0.19; (e) and the ratio ofTc/T<missing VAR>F 0.0185  which implies that I-43d<missing VAR>-phase of TaH3 falls inunconventional superconductors band in the Uemura plot.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 11, 'Tesla', 1],[23.0, 1.53, ';', 0],[63.0, 0.19, ';', 0]

F1324
###Debye temperature, electron-phonon coupling constant, and moderate nonadiabaticity in highly-compressed I-43d-TaH3 superconductor|E. F. Talantsev###
(1785006, 1785007)
 Here, we performed detailedanalysis of the reported experimental data by He et al (arXiv2212.13739 (2022))and deduced several parameters of the I-43d<missing VAR>-phase of TaH3 (a) the Debyetemperature, T<missing VAR>theta263 K, (b) the electron-phonon coupling constant,lambdae<missing VAR>-ph1.53; (c) the Fermi temperature T<missing VAR>F1324 K; (d) thestrength of nonadiabaticity, T<missing VAR>theta/T<missing VAR>F 0.19; (e) and the ratio ofTc/T<missing VAR>F 0.0185  which implies that I-43d<missing VAR>-phase of TaH3 falls inunconventional superconductors band in the Uemura plot.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 11, 'Tesla', 1],[14.0, 1.53, ';', 0],[25.0, 0.19, ';', 0]

K
###Debye temperature, electron-phonon coupling constant, and moderate nonadiabaticity in highly-compressed I-43d-TaH3 superconductor|E. F. Talantsev###
(1785009, 1785009)
 Here, we performed detailedanalysis of the reported experimental data by He et al (arXiv2212.13739 (2022))and deduced several parameters of the I-43d<missing VAR>-phase of TaH3 (a) the Debyetemperature, T<missing VAR>theta263 K, (b) the electron-phonon coupling constant,lambdae<missing VAR>-ph1.53; (c) the Fermi temperature T<missing VAR>F1324 K; (d) thestrength of nonadiabaticity, T<missing VAR>theta/T<missing VAR>F 0.19; (e) and the ratio ofTc/T<missing VAR>F 0.0185  which implies that I-43d<missing VAR>-phase of TaH3 falls inunconventional superconductors band in the Uemura plot.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 11, 'Tesla', 1],[17.0, 1.53, ';', 0],[23.0, 0.19, ';', 0]

F
###Debye temperature, electron-phonon coupling constant, and moderate nonadiabaticity in highly-compressed I-43d-TaH3 superconductor|E. F. Talantsev###
(1785030, 1785030)
 Here, we performed detailedanalysis of the reported experimental data by He et al (arXiv2212.13739 (2022))and deduced several parameters of the I-43d<missing VAR>-phase of TaH3 (a) the Debyetemperature, T<missing VAR>theta263 K, (b) the electron-phonon coupling constant,lambdae<missing VAR>-ph1.53; (c) the Fermi temperature T<missing VAR>F1324 K; (d) thestrength of nonadiabaticity, T<missing VAR>theta/T<missing VAR>F 0.19; (e) and the ratio ofTc/T<missing VAR>F 0.0185  which implies that I-43d<missing VAR>-phase of TaH3 falls inunconventional superconductors band in the Uemura plot.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 11, 'Tesla', 1],[38.0, 1.53, ';', 0],[2.0, 0.19, ';', 0]

F
###Debye temperature, electron-phonon coupling constant, and moderate nonadiabaticity in highly-compressed I-43d-TaH3 superconductor|E. F. Talantsev###
(1785052, 1785052)
 Here, we performed detailedanalysis of the reported experimental data by He et al (arXiv2212.13739 (2022))and deduced several parameters of the I-43d<missing VAR>-phase of TaH3 (a) the Debyetemperature, T<missing VAR>theta263 K, (b) the electron-phonon coupling constant,lambdae<missing VAR>-ph1.53; (c) the Fermi temperature T<missing VAR>F1324 K; (d) thestrength of nonadiabaticity, T<missing VAR>theta/T<missing VAR>F 0.19; (e) and the ratio ofTc/T<missing VAR>F 0.0185  which implies that I-43d<missing VAR>-phase of TaH3 falls inunconventional superconductors band in the Uemura plot.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[168.0, 11, 'Tesla', 1],[60.0, 1.53, ';', 0],[20.0, 0.19, ';', 0]

I
###Debye temperature, electron-phonon coupling constant, and moderate nonadiabaticity in highly-compressed I-43d-TaH3 superconductor|E. F. Talantsev###
(1785063, 1785063)
 Here, we performed detailedanalysis of the reported experimental data by He et al (arXiv2212.13739 (2022))and deduced several parameters of the I-43d<missing VAR>-phase of TaH3 (a) the Debyetemperature, T<missing VAR>theta263 K, (b) the electron-phonon coupling constant,lambdae<missing VAR>-ph1.53; (c) the Fermi temperature T<missing VAR>F1324 K; (d) thestrength of nonadiabaticity, T<missing VAR>theta/T<missing VAR>F 0.19; (e) and the ratio ofTc/T<missing VAR>F 0.0185  which implies that I-43d<missing VAR>-phase of TaH3 falls inunconventional superconductors band in the Uemura plot.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 11, 'Tesla', 1],[71.0, 1.53, ';', 0],[31.0, 0.19, ';', 0]

TaH3
###Debye temperature, electron-phonon coupling constant, and moderate nonadiabaticity in highly-compressed I-43d-TaH3 superconductor|E. F. Talantsev###
(1785072, 1785074)
 Here, we performed detailedanalysis of the reported experimental data by He et al (arXiv2212.13739 (2022))and deduced several parameters of the I-43d<missing VAR>-phase of TaH3 (a) the Debyetemperature, T<missing VAR>theta263 K, (b) the electron-phonon coupling constant,lambdae<missing VAR>-ph1.53; (c) the Fermi temperature T<missing VAR>F1324 K; (d) thestrength of nonadiabaticity, T<missing VAR>theta/T<missing VAR>F 0.19; (e) and the ratio ofTc/T<missing VAR>F 0.0185  which implies that I-43d<missing VAR>-phase of TaH3 falls inunconventional superconductors band in the Uemura plot.
Featurization terminated normally.
0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 11, 'Tesla', 1],[80.0, 1.53, ';', 0],[40.0, 0.19, ';', 0]

I
###Debye temperature, electron-phonon coupling constant, and moderate nonadiabaticity in highly-compressed I-43d-TaH3 superconductor|E. F. Talantsev###
(1785107, 1785107)
 Deduced parametersindicate that the I-43d<missing VAR>-phase of TaH3 (it P197 G<missing VAR>Pa) can be classifiedas typical unconventional high-temperature superconductor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[223.0, 11, 'Tesla', 2],[115.0, 1.53, ';', 1],[75.0, 0.19, ';', 1]

TaH3
###Debye temperature, electron-phonon coupling constant, and moderate nonadiabaticity in highly-compressed I-43d-TaH3 superconductor|E. F. Talantsev###
(1785116, 1785118)
 Deduced parametersindicate that the I-43d<missing VAR>-phase of TaH3 (it P197 G<missing VAR>Pa) can be classifiedas typical unconventional high-temperature superconductor.
Featurization terminated normally.
0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[232.0, 11, 'Tesla', 2],[124.0, 1.53, ';', 1],[84.0, 0.19, ';', 1]

P197
###Debye temperature, electron-phonon coupling constant, and moderate nonadiabaticity in highly-compressed I-43d-TaH3 superconductor|E. F. Talantsev###
(1785123, 1785124)
 Deduced parametersindicate that the I-43d<missing VAR>-phase of TaH3 (it P197 G<missing VAR>Pa) can be classifiedas typical unconventional high-temperature superconductor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[239.0, 11, 'Tesla', 2],[131.0, 1.53, ';', 1],[91.0, 0.19, ';', 1]

Pa
###Debye temperature, electron-phonon coupling constant, and moderate nonadiabaticity in highly-compressed I-43d-TaH3 superconductor|E. F. Talantsev###
(1785127, 1785127)
 Deduced parametersindicate that the I-43d<missing VAR>-phase of TaH3 (it P197 G<missing VAR>Pa) can be classifiedas typical unconventional high-temperature superconductor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0
[243.0, 11, 'Tesla', 2],[135.0, 1.53, ';', 1],[95.0, 0.19, ';', 1]

Ni3In2S2
###Record-high Mobility and Extreme Magnetoresistance on Kagome-lattice in Compensated Semimetal Ni3In2S2|Hongwei Fang,Meng Lyu,Hao Su,Jian Yuan,Yiwei Li,Lixuan Xu,Shuai Liu,Liyang Wei,Xinqi Liu,Haifeng Yang,Qi Yao,Meixiao Wang,Yanfeng Guo,Wujun Shi,Yulin Chen,Enke Liu,Zhongkai Liu###
(1785182, 1785187)
Record-high Mobility and Extreme Magnetoresistance on Kagome-lattice in Compensated Semimetal Ni3In2S2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[203.0, 7356, 'cm', 4],[231.0, 15518, '%', 4],[235.0, 2, 'K', 4],[238.0, 13, 'T', 4],[297.0, 3, 'd', 5]

Ni3In2S2
###Record-high Mobility and Extreme Magnetoresistance on Kagome-lattice in Compensated Semimetal Ni3In2S2|Hongwei Fang,Meng Lyu,Hao Su,Jian Yuan,Yiwei Li,Lixuan Xu,Shuai Liu,Liyang Wei,Xinqi Liu,Haifeng Yang,Qi Yao,Meixiao Wang,Yanfeng Guo,Wujun Shi,Yulin Chen,Enke Liu,Zhongkai Liu###
(1785300, 1785305)
 Here, the electronic structures of kagome-lattice crystalNi3In2S2 were investigated by transport measurements, angle-resolvedphotoemission spectroscopy as well as ab initio calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 7356, 'cm', 1],[113.0, 15518, '%', 1],[117.0, 2, 'K', 1],[120.0, 13, 'T', 1],[179.0, 3, 'd', 2]

Ni3In2S2
###Record-high Mobility and Extreme Magnetoresistance on Kagome-lattice in Compensated Semimetal Ni3In2S2|Hongwei Fang,Meng Lyu,Hao Su,Jian Yuan,Yiwei Li,Lixuan Xu,Shuai Liu,Liyang Wei,Xinqi Liu,Haifeng Yang,Qi Yao,Meixiao Wang,Yanfeng Guo,Wujun Shi,Yulin Chen,Enke Liu,Zhongkai Liu###
(1785349, 1785354)
 The transportmeasurements reveal Ni3In2S2 as a compensated semimetal with record-highcarrier mobility (8683 cm2 V-1 S-1 and 7356 cm2 V-1 S-1 for holes andelectrons) and extreme magnetoresistance (15518% at 2 K and 13 T) amongkagome-lattice materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 7356, 'cm', 0],[64.0, 15518, '%', 0],[68.0, 2, 'K', 0],[71.0, 13, 'T', 0],[130.0, 3, 'd', 1]

V
###Record-high Mobility and Extreme Magnetoresistance on Kagome-lattice in Compensated Semimetal Ni3In2S2|Hongwei Fang,Meng Lyu,Hao Su,Jian Yuan,Yiwei Li,Lixuan Xu,Shuai Liu,Liyang Wei,Xinqi Liu,Haifeng Yang,Qi Yao,Meixiao Wang,Yanfeng Guo,Wujun Shi,Yulin Chen,Enke Liu,Zhongkai Liu###
(1785381, 1785381)
 The transportmeasurements reveal Ni3In2S2 as a compensated semimetal with record-highcarrier mobility (8683 cm2 V-1 S-1 and 7356 cm2 V-1 S-1 for holes andelectrons) and extreme magnetoresistance (15518% at 2 K and 13 T) amongkagome-lattice materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 7356, 'cm', 0],[37.0, 15518, '%', 0],[41.0, 2, 'K', 0],[44.0, 13, 'T', 0],[103.0, 3, 'd', 1]

S
###Record-high Mobility and Extreme Magnetoresistance on Kagome-lattice in Compensated Semimetal Ni3In2S2|Hongwei Fang,Meng Lyu,Hao Su,Jian Yuan,Yiwei Li,Lixuan Xu,Shuai Liu,Liyang Wei,Xinqi Liu,Haifeng Yang,Qi Yao,Meixiao Wang,Yanfeng Guo,Wujun Shi,Yulin Chen,Enke Liu,Zhongkai Liu###
(1785385, 1785385)
 The transportmeasurements reveal Ni3In2S2 as a compensated semimetal with record-highcarrier mobility (8683 cm2 V-1 S-1 and 7356 cm2 V-1 S-1 for holes andelectrons) and extreme magnetoresistance (15518% at 2 K and 13 T) amongkagome-lattice materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 7356, 'cm', 0],[33.0, 15518, '%', 0],[37.0, 2, 'K', 0],[40.0, 13, 'T', 0],[99.0, 3, 'd', 1]

V
###Record-high Mobility and Extreme Magnetoresistance on Kagome-lattice in Compensated Semimetal Ni3In2S2|Hongwei Fang,Meng Lyu,Hao Su,Jian Yuan,Yiwei Li,Lixuan Xu,Shuai Liu,Liyang Wei,Xinqi Liu,Haifeng Yang,Qi Yao,Meixiao Wang,Yanfeng Guo,Wujun Shi,Yulin Chen,Enke Liu,Zhongkai Liu###
(1785393, 1785393)
 The transportmeasurements reveal Ni3In2S2 as a compensated semimetal with record-highcarrier mobility (8683 cm2 V-1 S-1 and 7356 cm2 V-1 S-1 for holes andelectrons) and extreme magnetoresistance (15518% at 2 K and 13 T) amongkagome-lattice materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 7356, 'cm', 0],[25.0, 15518, '%', 0],[29.0, 2, 'K', 0],[32.0, 13, 'T', 0],[91.0, 3, 'd', 1]

S
###Record-high Mobility and Extreme Magnetoresistance on Kagome-lattice in Compensated Semimetal Ni3In2S2|Hongwei Fang,Meng Lyu,Hao Su,Jian Yuan,Yiwei Li,Lixuan Xu,Shuai Liu,Liyang Wei,Xinqi Liu,Haifeng Yang,Qi Yao,Meixiao Wang,Yanfeng Guo,Wujun Shi,Yulin Chen,Enke Liu,Zhongkai Liu###
(1785397, 1785397)
 The transportmeasurements reveal Ni3In2S2 as a compensated semimetal with record-highcarrier mobility (8683 cm2 V-1 S-1 and 7356 cm2 V-1 S-1 for holes andelectrons) and extreme magnetoresistance (15518% at 2 K and 13 T) amongkagome-lattice materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[7.0, 7356, 'cm', 0],[21.0, 15518, '%', 0],[25.0, 2, 'K', 0],[28.0, 13, 'T', 0],[87.0, 3, 'd', 1]

Ni
###Record-high Mobility and Extreme Magnetoresistance on Kagome-lattice in Compensated Semimetal Ni3In2S2|Hongwei Fang,Meng Lyu,Hao Su,Jian Yuan,Yiwei Li,Lixuan Xu,Shuai Liu,Liyang Wei,Xinqi Liu,Haifeng Yang,Qi Yao,Meixiao Wang,Yanfeng Guo,Wujun Shi,Yulin Chen,Enke Liu,Zhongkai Liu###
(1785490, 1785490)
 These extraordinary properties are well explained byits band structure with indirect gap, small electron/hole pockets and largebandwidth of the 3d electrons of Ni on the kagome lattice.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 7356, 'cm', 1],[72.0, 15518, '%', 1],[68.0, 2, 'K', 1],[65.0, 13, 'T', 1],[6.0, 3, 'd', 0]

C2
###Dimensionality control and rotational symmetry breaking superconductivity in square-planar layered nickelates|Lin Er Chow,Km Rubi,King Yau Yip,Mathieu Pierre,Maxime Leroux,Xinyou Liu,Zhaoyang Luo,Shengwei Zeng,Changjian Li,Michel Goiran,Neil Harrison,Walter Escoffier,Swee Kuan Goh,A. Ariando###
(1786254, 1786255)
 The superconductingstate, probed by superconducting critical current and magnetoresistance withinsuperconducting transition under direction-dependent in-plane magnetic fields,exhibits a C2 rotational symmetry which breaks the C4 rotational symmetryof the square-planar lattice.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 0.5, 'K', 1]

C4
###Dimensionality control and rotational symmetry breaking superconductivity in square-planar layered nickelates|Lin Er Chow,Km Rubi,King Yau Yip,Mathieu Pierre,Maxime Leroux,Xinyou Liu,Zhaoyang Luo,Shengwei Zeng,Changjian Li,Michel Goiran,Neil Harrison,Walter Escoffier,Swee Kuan Goh,A. Ariando###
(1786267, 1786268)
 The superconductingstate, probed by superconducting critical current and magnetoresistance withinsuperconducting transition under direction-dependent in-plane magnetic fields,exhibits a C2 rotational symmetry which breaks the C4 rotational symmetryof the square-planar lattice.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 0.5, 'K', 1]

Ta2
###Pressure-induced superconductivity in quasi-one-dimensional semimetal $\mathrm{Ta}_2 \mathrm{PdSe}_6$|Haiyang Yang,Yonghui Zhou,Liangyu Li,Zheng Chen,Zhuyi Zhang,Shuyang Wang,Jing Wang,Xuliang Chen,Chao An,Ying Zhou,Min Zhang,Ranran Zhang,Xiangde Zhu,Lili Zhang,Xiaoping Yang,Zhaorong Yang###
(1786514, 1786515)
Pressure-induced superconductivity in quasi-one-dimensional semimetal mathrmTa2 mathrmPdSe6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PdSe6
###Pressure-induced superconductivity in quasi-one-dimensional semimetal $\mathrm{Ta}_2 \mathrm{PdSe}_6$|Haiyang Yang,Yonghui Zhou,Liangyu Li,Zheng Chen,Zhuyi Zhang,Shuyang Wang,Jing Wang,Xuliang Chen,Chao An,Ying Zhou,Min Zhang,Ranran Zhang,Xiangde Zhu,Lili Zhang,Xiaoping Yang,Zhaorong Yang###
(1786518, 1786520)
Pressure-induced superconductivity in quasi-one-dimensional semimetal mathrmTa2 mathrmPdSe6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ta2
###Pressure-induced superconductivity in quasi-one-dimensional semimetal $\mathrm{Ta}_2 \mathrm{PdSe}_6$|Haiyang Yang,Yonghui Zhou,Liangyu Li,Zheng Chen,Zhuyi Zhang,Shuyang Wang,Jing Wang,Xuliang Chen,Chao An,Ying Zhou,Min Zhang,Ranran Zhang,Xiangde Zhu,Lili Zhang,Xiaoping Yang,Zhaorong Yang###
(1786551, 1786552)
 Here we report the discovery of pressure-induced superconductivity inquasi-one-dimensional mathrmTa2 mathrmPdSe6, through a combination ofelectrical transport, synchrotron x<missing VAR>-ray diffraction, and theoreticalcalculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PdSe6
###Pressure-induced superconductivity in quasi-one-dimensional semimetal $\mathrm{Ta}_2 \mathrm{PdSe}_6$|Haiyang Yang,Yonghui Zhou,Liangyu Li,Zheng Chen,Zhuyi Zhang,Shuyang Wang,Jing Wang,Xuliang Chen,Chao An,Ying Zhou,Min Zhang,Ranran Zhang,Xiangde Zhu,Lili Zhang,Xiaoping Yang,Zhaorong Yang###
(1786555, 1786557)
 Here we report the discovery of pressure-induced superconductivity inquasi-one-dimensional mathrmTa2 mathrmPdSe6, through a combination ofelectrical transport, synchrotron x<missing VAR>-ray diffraction, and theoreticalcalculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Pressure-induced superconductivity in quasi-one-dimensional semimetal $\mathrm{Ta}_2 \mathrm{PdSe}_6$|Haiyang Yang,Yonghui Zhou,Liangyu Li,Zheng Chen,Zhuyi Zhang,Shuyang Wang,Jing Wang,Xuliang Chen,Chao An,Ying Zhou,Min Zhang,Ranran Zhang,Xiangde Zhu,Lili Zhang,Xiaoping Yang,Zhaorong Yang###
(1786616, 1786616)
 Our transport measurements show that the superconductivityappears at a critical pressure Pmathrmc<missing VAR> sim 18.3 G<missing VAR>Pa and is robustupon further compression up to 62.6 G<missing VAR>Pa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pa
###Pressure-induced superconductivity in quasi-one-dimensional semimetal $\mathrm{Ta}_2 \mathrm{PdSe}_6$|Haiyang Yang,Yonghui Zhou,Liangyu Li,Zheng Chen,Zhuyi Zhang,Shuyang Wang,Jing Wang,Xuliang Chen,Chao An,Ying Zhou,Min Zhang,Ranran Zhang,Xiangde Zhu,Lili Zhang,Xiaoping Yang,Zhaorong Yang###
(1786625, 1786625)
 Our transport measurements show that the superconductivityappears at a critical pressure Pmathrmc<missing VAR> sim 18.3 G<missing VAR>Pa and is robustupon further compression up to 62.6 G<missing VAR>Pa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pa
###Pressure-induced superconductivity in quasi-one-dimensional semimetal $\mathrm{Ta}_2 \mathrm{PdSe}_6$|Haiyang Yang,Yonghui Zhou,Liangyu Li,Zheng Chen,Zhuyi Zhang,Shuyang Wang,Jing Wang,Xuliang Chen,Chao An,Ying Zhou,Min Zhang,Ranran Zhang,Xiangde Zhu,Lili Zhang,Xiaoping Yang,Zhaorong Yang###
(1786647, 1786647)
 Our transport measurements show that the superconductivityappears at a critical pressure Pmathrmc<missing VAR> sim 18.3 G<missing VAR>Pa and is robustupon further compression up to 62.6 G<missing VAR>Pa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Pressure-induced superconductivity in quasi-one-dimensional semimetal $\mathrm{Ta}_2 \mathrm{PdSe}_6$|Haiyang Yang,Yonghui Zhou,Liangyu Li,Zheng Chen,Zhuyi Zhang,Shuyang Wang,Jing Wang,Xuliang Chen,Chao An,Ying Zhou,Min Zhang,Ranran Zhang,Xiangde Zhu,Lili Zhang,Xiaoping Yang,Zhaorong Yang###
(1786664, 1786664)
 The estimated upper critical fieldmu0 Hmathrmc<missing VAR> 2(0) in the pressurized mathrmTa2 mathrmPdSe6is much lower than the Pauli limiting field, in contrast to the case in itsisostructural analogs M<missing VAR>2 mathrmPdmathrmx X5 (M<missing VAR>mathrmNb, Ta;X<missing VAR>mathrmS, mathrmSe).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ta2
###Pressure-induced superconductivity in quasi-one-dimensional semimetal $\mathrm{Ta}_2 \mathrm{PdSe}_6$|Haiyang Yang,Yonghui Zhou,Liangyu Li,Zheng Chen,Zhuyi Zhang,Shuyang Wang,Jing Wang,Xuliang Chen,Chao An,Ying Zhou,Min Zhang,Ranran Zhang,Xiangde Zhu,Lili Zhang,Xiaoping Yang,Zhaorong Yang###
(1786680, 1786681)
 The estimated upper critical fieldmu0 Hmathrmc<missing VAR> 2(0) in the pressurized mathrmTa2 mathrmPdSe6is much lower than the Pauli limiting field, in contrast to the case in itsisostructural analogs M<missing VAR>2 mathrmPdmathrmx X5 (M<missing VAR>mathrmNb, Ta;X<missing VAR>mathrmS, mathrmSe).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PdSe6
###Pressure-induced superconductivity in quasi-one-dimensional semimetal $\mathrm{Ta}_2 \mathrm{PdSe}_6$|Haiyang Yang,Yonghui Zhou,Liangyu Li,Zheng Chen,Zhuyi Zhang,Shuyang Wang,Jing Wang,Xuliang Chen,Chao An,Ying Zhou,Min Zhang,Ranran Zhang,Xiangde Zhu,Lili Zhang,Xiaoping Yang,Zhaorong Yang###
(1786684, 1786686)
 The estimated upper critical fieldmu0 Hmathrmc<missing VAR> 2(0) in the pressurized mathrmTa2 mathrmPdSe6is much lower than the Pauli limiting field, in contrast to the case in itsisostructural analogs M<missing VAR>2 mathrmPdmathrmx X5 (M<missing VAR>mathrmNb, Ta;X<missing VAR>mathrmS, mathrmSe).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pd
###Pressure-induced superconductivity in quasi-one-dimensional semimetal $\mathrm{Ta}_2 \mathrm{PdSe}_6$|Haiyang Yang,Yonghui Zhou,Liangyu Li,Zheng Chen,Zhuyi Zhang,Shuyang Wang,Jing Wang,Xuliang Chen,Chao An,Ying Zhou,Min Zhang,Ranran Zhang,Xiangde Zhu,Lili Zhang,Xiaoping Yang,Zhaorong Yang###
(1786729, 1786729)
 The estimated upper critical fieldmu0 Hmathrmc<missing VAR> 2(0) in the pressurized mathrmTa2 mathrmPdSe6is much lower than the Pauli limiting field, in contrast to the case in itsisostructural analogs M<missing VAR>2 mathrmPdmathrmx X5 (M<missing VAR>mathrmNb, Ta;X<missing VAR>mathrmS, mathrmSe).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nb
###Pressure-induced superconductivity in quasi-one-dimensional semimetal $\mathrm{Ta}_2 \mathrm{PdSe}_6$|Haiyang Yang,Yonghui Zhou,Liangyu Li,Zheng Chen,Zhuyi Zhang,Shuyang Wang,Jing Wang,Xuliang Chen,Chao An,Ying Zhou,Min Zhang,Ranran Zhang,Xiangde Zhu,Lili Zhang,Xiaoping Yang,Zhaorong Yang###
(1786739, 1786739)
 The estimated upper critical fieldmu0 Hmathrmc<missing VAR> 2(0) in the pressurized mathrmTa2 mathrmPdSe6is much lower than the Pauli limiting field, in contrast to the case in itsisostructural analogs M<missing VAR>2 mathrmPdmathrmx X5 (M<missing VAR>mathrmNb, Ta;X<missing VAR>mathrmS, mathrmSe).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ta
###Pressure-induced superconductivity in quasi-one-dimensional semimetal $\mathrm{Ta}_2 \mathrm{PdSe}_6$|Haiyang Yang,Yonghui Zhou,Liangyu Li,Zheng Chen,Zhuyi Zhang,Shuyang Wang,Jing Wang,Xuliang Chen,Chao An,Ying Zhou,Min Zhang,Ranran Zhang,Xiangde Zhu,Lili Zhang,Xiaoping Yang,Zhaorong Yang###
(1786742, 1786742)
 The estimated upper critical fieldmu0 Hmathrmc<missing VAR> 2(0) in the pressurized mathrmTa2 mathrmPdSe6is much lower than the Pauli limiting field, in contrast to the case in itsisostructural analogs M<missing VAR>2 mathrmPdmathrmx X5 (M<missing VAR>mathrmNb, Ta;X<missing VAR>mathrmS, mathrmSe).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Pressure-induced superconductivity in quasi-one-dimensional semimetal $\mathrm{Ta}_2 \mathrm{PdSe}_6$|Haiyang Yang,Yonghui Zhou,Liangyu Li,Zheng Chen,Zhuyi Zhang,Shuyang Wang,Jing Wang,Xuliang Chen,Chao An,Ying Zhou,Min Zhang,Ranran Zhang,Xiangde Zhu,Lili Zhang,Xiaoping Yang,Zhaorong Yang###
(1786748, 1786748)
 The estimated upper critical fieldmu0 Hmathrmc<missing VAR> 2(0) in the pressurized mathrmTa2 mathrmPdSe6is much lower than the Pauli limiting field, in contrast to the case in itsisostructural analogs M<missing VAR>2 mathrmPdmathrmx X5 (M<missing VAR>mathrmNb, Ta;X<missing VAR>mathrmS, mathrmSe).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Se
###Pressure-induced superconductivity in quasi-one-dimensional semimetal $\mathrm{Ta}_2 \mathrm{PdSe}_6$|Haiyang Yang,Yonghui Zhou,Liangyu Li,Zheng Chen,Zhuyi Zhang,Shuyang Wang,Jing Wang,Xuliang Chen,Chao An,Ying Zhou,Min Zhang,Ranran Zhang,Xiangde Zhu,Lili Zhang,Xiaoping Yang,Zhaorong Yang###
(1786752, 1786752)
 The estimated upper critical fieldmu0 Hmathrmc<missing VAR> 2(0) in the pressurized mathrmTa2 mathrmPdSe6is much lower than the Pauli limiting field, in contrast to the case in itsisostructural analogs M<missing VAR>2 mathrmPdmathrmx X5 (M<missing VAR>mathrmNb, Ta;X<missing VAR>mathrmS, mathrmSe).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Pressure-induced superconductivity in quasi-one-dimensional semimetal $\mathrm{Ta}_2 \mathrm{PdSe}_6$|Haiyang Yang,Yonghui Zhou,Liangyu Li,Zheng Chen,Zhuyi Zhang,Shuyang Wang,Jing Wang,Xuliang Chen,Chao An,Ying Zhou,Min Zhang,Ranran Zhang,Xiangde Zhu,Lili Zhang,Xiaoping Yang,Zhaorong Yang###
(1786856, 1786856)
 Meanwhile,room-temperature synchrotron x<missing VAR>-ray diffraction experiments reveal the stabilityof the pristine monoclinic structure (space group C 2 / m<missing VAR> ) upon compression.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ta2
###Pressure-induced superconductivity in quasi-one-dimensional semimetal $\mathrm{Ta}_2 \mathrm{PdSe}_6$|Haiyang Yang,Yonghui Zhou,Liangyu Li,Zheng Chen,Zhuyi Zhang,Shuyang Wang,Jing Wang,Xuliang Chen,Chao An,Ying Zhou,Min Zhang,Ranran Zhang,Xiangde Zhu,Lili Zhang,Xiaoping Yang,Zhaorong Yang###
(1786926, 1786927)
Combined with the density functional theory calculations, we argue that apressure-induced Lifshitz transition could be the electronic origin of theemergent superconductivity in mathrmTa2 mathrmPdSe6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PdSe6
###Pressure-induced superconductivity in quasi-one-dimensional semimetal $\mathrm{Ta}_2 \mathrm{PdSe}_6$|Haiyang Yang,Yonghui Zhou,Liangyu Li,Zheng Chen,Zhuyi Zhang,Shuyang Wang,Jing Wang,Xuliang Chen,Chao An,Ying Zhou,Min Zhang,Ranran Zhang,Xiangde Zhu,Lili Zhang,Xiaoping Yang,Zhaorong Yang###
(1786930, 1786932)
Combined with the density functional theory calculations, we argue that apressure-induced Lifshitz transition could be the electronic origin of theemergent superconductivity in mathrmTa2 mathrmPdSe6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Ferromagnetic Resonance in Two-dimensional van der Waals Magnets: A Probe for Spin Dynamics|Chunli Tang,Laith Alahmed,Muntasir Mahdi,Yuzan Xiong,Jerad Inman,Nathan J. McLaughlin,Christoph Zollitsch,Tae Hee Kim,Chunhui Rita Du,Hidekazu Kurebayashi,Elton J. G. Santos,Wei Zhang,Peng Li,Wencan Jin###
(1787018, 1787018)
 The discovery of atomic monolayer magnetic materials has stimulated intenseresearch activities in the two-dimensional (2D) van der Waals (vdW) materialscommunity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 2, 'D', 1],[102.0, 2, 'D', 2],[334.0, 2, 'D', 5],[414.0, 2, 'D', 6]

W
###Ferromagnetic Resonance in Two-dimensional van der Waals Magnets: A Probe for Spin Dynamics|Chunli Tang,Laith Alahmed,Muntasir Mahdi,Yuzan Xiong,Jerad Inman,Nathan J. McLaughlin,Christoph Zollitsch,Tae Hee Kim,Chunhui Rita Du,Hidekazu Kurebayashi,Elton J. G. Santos,Wei Zhang,Peng Li,Wencan Jin###
(1787056, 1787056)
 The field is growing rapidly and there has been a large class of 2DvdW magnetic compounds with unique properties, which provides an ideal platformto study magnetism in the atomically thin limit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 2, 'D', 0],[64.0, 2, 'D', 1],[296.0, 2, 'D', 4],[376.0, 2, 'D', 5]

In
###Ferromagnetic Resonance in Two-dimensional van der Waals Magnets: A Probe for Spin Dynamics|Chunli Tang,Laith Alahmed,Muntasir Mahdi,Yuzan Xiong,Jerad Inman,Nathan J. McLaughlin,Christoph Zollitsch,Tae Hee Kim,Chunhui Rita Du,Hidekazu Kurebayashi,Elton J. G. Santos,Wei Zhang,Peng Li,Wencan Jin###
(1787097, 1787097)
 In parallel, based ontunneling magnetoresistance and magneto-optical effect in 2D vdW magnets andtheir heterostructures, emerging concepts of spintronic and optoelectronicapplications such as spin tunnel field-effect transistors and spin-filteringdevices are explored.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 2, 'D', 1],[23.0, 2, 'D', 0],[255.0, 2, 'D', 3],[335.0, 2, 'D', 4]

W
###Ferromagnetic Resonance in Two-dimensional van der Waals Magnets: A Probe for Spin Dynamics|Chunli Tang,Laith Alahmed,Muntasir Mahdi,Yuzan Xiong,Jerad Inman,Nathan J. McLaughlin,Christoph Zollitsch,Tae Hee Kim,Chunhui Rita Du,Hidekazu Kurebayashi,Elton J. G. Santos,Wei Zhang,Peng Li,Wencan Jin###
(1787123, 1787123)
 In parallel, based ontunneling magnetoresistance and magneto-optical effect in 2D vdW magnets andtheir heterostructures, emerging concepts of spintronic and optoelectronicapplications such as spin tunnel field-effect transistors and spin-filteringdevices are explored.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 2, 'D', 1],[3.0, 2, 'D', 0],[229.0, 2, 'D', 3],[309.0, 2, 'D', 4]

F
###Ferromagnetic Resonance in Two-dimensional van der Waals Magnets: A Probe for Spin Dynamics|Chunli Tang,Laith Alahmed,Muntasir Mahdi,Yuzan Xiong,Jerad Inman,Nathan J. McLaughlin,Christoph Zollitsch,Tae Hee Kim,Chunhui Rita Du,Hidekazu Kurebayashi,Elton J. G. Santos,Wei Zhang,Peng Li,Wencan Jin###
(1787238, 1787238)
 Ferromagnetic resonance(FMR) allows direct measurements of magnetic excitations, which providesinsight into the key parameters of magnetic properties such as exchangeinteraction, magnetic anisotropy, gyromagnetic ratio, spin-orbit coupling,damping rate, and domain structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, 2, 'D', 3],[118.0, 2, 'D', 2],[114.0, 2, 'D', 1],[194.0, 2, 'D', 2]

In
###Ferromagnetic Resonance in Two-dimensional van der Waals Magnets: A Probe for Spin Dynamics|Chunli Tang,Laith Alahmed,Muntasir Mahdi,Yuzan Xiong,Jerad Inman,Nathan J. McLaughlin,Christoph Zollitsch,Tae Hee Kim,Chunhui Rita Du,Hidekazu Kurebayashi,Elton J. G. Santos,Wei Zhang,Peng Li,Wencan Jin###
(1787317, 1787317)
 In this review article, we present anoverview of the essential progress in probing spin dynamics of 2D vdW magnetsusing FMR techniques.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[265.0, 2, 'D', 4],[197.0, 2, 'D', 3],[35.0, 2, 'D', 0],[115.0, 2, 'D', 1]

W
###Ferromagnetic Resonance in Two-dimensional van der Waals Magnets: A Probe for Spin Dynamics|Chunli Tang,Laith Alahmed,Muntasir Mahdi,Yuzan Xiong,Jerad Inman,Nathan J. McLaughlin,Christoph Zollitsch,Tae Hee Kim,Chunhui Rita Du,Hidekazu Kurebayashi,Elton J. G. Santos,Wei Zhang,Peng Li,Wencan Jin###
(1787355, 1787355)
 In this review article, we present anoverview of the essential progress in probing spin dynamics of 2D vdW magnetsusing FMR techniques.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[303.0, 2, 'D', 4],[235.0, 2, 'D', 3],[3.0, 2, 'D', 0],[77.0, 2, 'D', 1]

F
###Ferromagnetic Resonance in Two-dimensional van der Waals Magnets: A Probe for Spin Dynamics|Chunli Tang,Laith Alahmed,Muntasir Mahdi,Yuzan Xiong,Jerad Inman,Nathan J. McLaughlin,Christoph Zollitsch,Tae Hee Kim,Chunhui Rita Du,Hidekazu Kurebayashi,Elton J. G. Santos,Wei Zhang,Peng Li,Wencan Jin###
(1787362, 1787362)
 In this review article, we present anoverview of the essential progress in probing spin dynamics of 2D vdW magnetsusing FMR techniques.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[310.0, 2, 'D', 4],[242.0, 2, 'D', 3],[10.0, 2, 'D', 0],[70.0, 2, 'D', 1]

F
###Ferromagnetic Resonance in Two-dimensional van der Waals Magnets: A Probe for Spin Dynamics|Chunli Tang,Laith Alahmed,Muntasir Mahdi,Yuzan Xiong,Jerad Inman,Nathan J. McLaughlin,Christoph Zollitsch,Tae Hee Kim,Chunhui Rita Du,Hidekazu Kurebayashi,Elton J. G. Santos,Wei Zhang,Peng Li,Wencan Jin###
(1787397, 1787397)
 Given the dynamic nature of this field, we focus mainlyon the broadband FMR, optical FMR, and spin-torque FMR, and their applicationsin studying prototypical 2D vdW magnets including CrX<missing VAR>3 (X<missing VAR>  Cl, Br, I),Fe5GeTe2, and Cr2Ge2Te6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[345.0, 2, 'D', 5],[277.0, 2, 'D', 4],[45.0, 2, 'D', 1],[35.0, 2, 'D', 0]

F
###Ferromagnetic Resonance in Two-dimensional van der Waals Magnets: A Probe for Spin Dynamics|Chunli Tang,Laith Alahmed,Muntasir Mahdi,Yuzan Xiong,Jerad Inman,Nathan J. McLaughlin,Christoph Zollitsch,Tae Hee Kim,Chunhui Rita Du,Hidekazu Kurebayashi,Elton J. G. Santos,Wei Zhang,Peng Li,Wencan Jin###
(1787404, 1787404)
 Given the dynamic nature of this field, we focus mainlyon the broadband FMR, optical FMR, and spin-torque FMR, and their applicationsin studying prototypical 2D vdW magnets including CrX<missing VAR>3 (X<missing VAR>  Cl, Br, I),Fe5GeTe2, and Cr2Ge2Te6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[352.0, 2, 'D', 5],[284.0, 2, 'D', 4],[52.0, 2, 'D', 1],[28.0, 2, 'D', 0]

F
###Ferromagnetic Resonance in Two-dimensional van der Waals Magnets: A Probe for Spin Dynamics|Chunli Tang,Laith Alahmed,Muntasir Mahdi,Yuzan Xiong,Jerad Inman,Nathan J. McLaughlin,Christoph Zollitsch,Tae Hee Kim,Chunhui Rita Du,Hidekazu Kurebayashi,Elton J. G. Santos,Wei Zhang,Peng Li,Wencan Jin###
(1787415, 1787415)
 Given the dynamic nature of this field, we focus mainlyon the broadband FMR, optical FMR, and spin-torque FMR, and their applicationsin studying prototypical 2D vdW magnets including CrX<missing VAR>3 (X<missing VAR>  Cl, Br, I),Fe5GeTe2, and Cr2Ge2Te6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[363.0, 2, 'D', 5],[295.0, 2, 'D', 4],[63.0, 2, 'D', 1],[17.0, 2, 'D', 0]

W
###Ferromagnetic Resonance in Two-dimensional van der Waals Magnets: A Probe for Spin Dynamics|Chunli Tang,Laith Alahmed,Muntasir Mahdi,Yuzan Xiong,Jerad Inman,Nathan J. McLaughlin,Christoph Zollitsch,Tae Hee Kim,Chunhui Rita Du,Hidekazu Kurebayashi,Elton J. G. Santos,Wei Zhang,Peng Li,Wencan Jin###
(1787435, 1787435)
 Given the dynamic nature of this field, we focus mainlyon the broadband FMR, optical FMR, and spin-torque FMR, and their applicationsin studying prototypical 2D vdW magnets including CrX<missing VAR>3 (X<missing VAR>  Cl, Br, I),Fe5GeTe2, and Cr2Ge2Te6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[383.0, 2, 'D', 5],[315.0, 2, 'D', 4],[83.0, 2, 'D', 1],[3.0, 2, 'D', 0]

Cr
###Ferromagnetic Resonance in Two-dimensional van der Waals Magnets: A Probe for Spin Dynamics|Chunli Tang,Laith Alahmed,Muntasir Mahdi,Yuzan Xiong,Jerad Inman,Nathan J. McLaughlin,Christoph Zollitsch,Tae Hee Kim,Chunhui Rita Du,Hidekazu Kurebayashi,Elton J. G. Santos,Wei Zhang,Peng Li,Wencan Jin###
(1787441, 1787441)
 Given the dynamic nature of this field, we focus mainlyon the broadband FMR, optical FMR, and spin-torque FMR, and their applicationsin studying prototypical 2D vdW magnets including CrX<missing VAR>3 (X<missing VAR>  Cl, Br, I),Fe5GeTe2, and Cr2Ge2Te6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[389.0, 2, 'D', 5],[321.0, 2, 'D', 4],[89.0, 2, 'D', 1],[9.0, 2, 'D', 0]

Cl
###Ferromagnetic Resonance in Two-dimensional van der Waals Magnets: A Probe for Spin Dynamics|Chunli Tang,Laith Alahmed,Muntasir Mahdi,Yuzan Xiong,Jerad Inman,Nathan J. McLaughlin,Christoph Zollitsch,Tae Hee Kim,Chunhui Rita Du,Hidekazu Kurebayashi,Elton J. G. Santos,Wei Zhang,Peng Li,Wencan Jin###
(1787449, 1787449)
 Given the dynamic nature of this field, we focus mainlyon the broadband FMR, optical FMR, and spin-torque FMR, and their applicationsin studying prototypical 2D vdW magnets including CrX<missing VAR>3 (X<missing VAR>  Cl, Br, I),Fe5GeTe2, and Cr2Ge2Te6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[397.0, 2, 'D', 5],[329.0, 2, 'D', 4],[97.0, 2, 'D', 1],[17.0, 2, 'D', 0]

Br
###Ferromagnetic Resonance in Two-dimensional van der Waals Magnets: A Probe for Spin Dynamics|Chunli Tang,Laith Alahmed,Muntasir Mahdi,Yuzan Xiong,Jerad Inman,Nathan J. McLaughlin,Christoph Zollitsch,Tae Hee Kim,Chunhui Rita Du,Hidekazu Kurebayashi,Elton J. G. Santos,Wei Zhang,Peng Li,Wencan Jin###
(1787452, 1787452)
 Given the dynamic nature of this field, we focus mainlyon the broadband FMR, optical FMR, and spin-torque FMR, and their applicationsin studying prototypical 2D vdW magnets including CrX<missing VAR>3 (X<missing VAR>  Cl, Br, I),Fe5GeTe2, and Cr2Ge2Te6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[400.0, 2, 'D', 5],[332.0, 2, 'D', 4],[100.0, 2, 'D', 1],[20.0, 2, 'D', 0]

I
###Ferromagnetic Resonance in Two-dimensional van der Waals Magnets: A Probe for Spin Dynamics|Chunli Tang,Laith Alahmed,Muntasir Mahdi,Yuzan Xiong,Jerad Inman,Nathan J. McLaughlin,Christoph Zollitsch,Tae Hee Kim,Chunhui Rita Du,Hidekazu Kurebayashi,Elton J. G. Santos,Wei Zhang,Peng Li,Wencan Jin###
(1787455, 1787455)
 Given the dynamic nature of this field, we focus mainlyon the broadband FMR, optical FMR, and spin-torque FMR, and their applicationsin studying prototypical 2D vdW magnets including CrX<missing VAR>3 (X<missing VAR>  Cl, Br, I),Fe5GeTe2, and Cr2Ge2Te6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[403.0, 2, 'D', 5],[335.0, 2, 'D', 4],[103.0, 2, 'D', 1],[23.0, 2, 'D', 0]

Fe5GeTe2
###Ferromagnetic Resonance in Two-dimensional van der Waals Magnets: A Probe for Spin Dynamics|Chunli Tang,Laith Alahmed,Muntasir Mahdi,Yuzan Xiong,Jerad Inman,Nathan J. McLaughlin,Christoph Zollitsch,Tae Hee Kim,Chunhui Rita Du,Hidekazu Kurebayashi,Elton J. G. Santos,Wei Zhang,Peng Li,Wencan Jin###
(1787460, 1787464)
 Given the dynamic nature of this field, we focus mainlyon the broadband FMR, optical FMR, and spin-torque FMR, and their applicationsin studying prototypical 2D vdW magnets including CrX<missing VAR>3 (X<missing VAR>  Cl, Br, I),Fe5GeTe2, and Cr2Ge2Te6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.625,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[408.0, 2, 'D', 5],[340.0, 2, 'D', 4],[108.0, 2, 'D', 1],[28.0, 2, 'D', 0]

Cr2Ge2Te6
###Ferromagnetic Resonance in Two-dimensional van der Waals Magnets: A Probe for Spin Dynamics|Chunli Tang,Laith Alahmed,Muntasir Mahdi,Yuzan Xiong,Jerad Inman,Nathan J. McLaughlin,Christoph Zollitsch,Tae Hee Kim,Chunhui Rita Du,Hidekazu Kurebayashi,Elton J. G. Santos,Wei Zhang,Peng Li,Wencan Jin###
(1787469, 1787474)
 Given the dynamic nature of this field, we focus mainlyon the broadband FMR, optical FMR, and spin-torque FMR, and their applicationsin studying prototypical 2D vdW magnets including CrX<missing VAR>3 (X<missing VAR>  Cl, Br, I),Fe5GeTe2, and Cr2Ge2Te6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[417.0, 2, 'D', 5],[349.0, 2, 'D', 4],[117.0, 2, 'D', 1],[37.0, 2, 'D', 0]

F
###Ferromagnetic Resonance in Two-dimensional van der Waals Magnets: A Probe for Spin Dynamics|Chunli Tang,Laith Alahmed,Muntasir Mahdi,Yuzan Xiong,Jerad Inman,Nathan J. McLaughlin,Christoph Zollitsch,Tae Hee Kim,Chunhui Rita Du,Hidekazu Kurebayashi,Elton J. G. Santos,Wei Zhang,Peng Li,Wencan Jin###
(1787501, 1787501)
 We conclude with the recent advances in laboratory-and synchrotron-based FMR techniques and their opportunities to broaden thehorizon of research pathways into atomically thin magnets.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[449.0, 2, 'D', 6],[381.0, 2, 'D', 5],[149.0, 2, 'D', 2],[69.0, 2, 'D', 1]

Fe
###Ab initio Prediction of Mechanical, Electronic, Magnetic and Transport Properties of Bulk and Heterostructure of a Novel Fe-Cr based Full Heusler Chalcogenide|Joydipto Bhattacharya,Rajeev Dutt,Aparna Chakrabarti###
(1787581, 1787581)
Ab initio Prediction of Mechanical, Electronic, Magnetic and Transport Properties of Bulk and Heterostructure of a Novel Fe-Cr based Full Heusler Chalcogenide.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 95, '%', 2],[220.0, 1.26, ',', 3],[526.0, 1000, '%', 9]

Cr
###Ab initio Prediction of Mechanical, Electronic, Magnetic and Transport Properties of Bulk and Heterostructure of a Novel Fe-Cr based Full Heusler Chalcogenide|Joydipto Bhattacharya,Rajeev Dutt,Aparna Chakrabarti###
(1787583, 1787583)
Ab initio Prediction of Mechanical, Electronic, Magnetic and Transport Properties of Bulk and Heterostructure of a Novel Fe-Cr based Full Heusler Chalcogenide.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 95, '%', 2],[218.0, 1.26, ',', 3],[524.0, 1000, '%', 9]

Fe2CrTe
###Ab initio Prediction of Mechanical, Electronic, Magnetic and Transport Properties of Bulk and Heterostructure of a Novel Fe-Cr based Full Heusler Chalcogenide|Joydipto Bhattacharya,Rajeev Dutt,Aparna Chakrabarti###
(1787658, 1787661)
 Using electronic structure calculations based on density functional theory,we predict and study the structural, mechanical, electronic, magnetic andtransport properties of a new full Heusler chalcogenide, namely, Fe2CrTe,both in bulk and heterostructure form.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 95, '%', 1],[140.0, 1.26, ',', 2],[446.0, 1000, '%', 8]

H
###Ab initio Prediction of Mechanical, Electronic, Magnetic and Transport Properties of Bulk and Heterostructure of a Novel Fe-Cr based Full Heusler Chalcogenide|Joydipto Bhattacharya,Rajeev Dutt,Aparna Chakrabarti###
(1787695, 1787695)
 The system shows a ferromagnetic andhalf-metallic(HM) like behavior, with a very high (about 95%) spin polarizationat the Fermi level, in its cubic phase.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 95, '%', 0],[106.0, 1.26, ',', 1],[412.0, 1000, '%', 7]

H
###Ab initio Prediction of Mechanical, Electronic, Magnetic and Transport Properties of Bulk and Heterostructure of a Novel Fe-Cr based Full Heusler Chalcogenide|Joydipto Bhattacharya,Rajeev Dutt,Aparna Chakrabarti###
(1787951, 1787951)
 Due to the HM<missing VAR>-like behavior of the cubic phase andkeeping in mind the practical aspects, we probe the effect of strain as well assubstrate on various physical properties of this alloy.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[236.0, 95, '%', 5],[150.0, 1.26, ',', 4],[156.0, 1000, '%', 2]

Fe2CrTe/MgO/Fe2CrTe
###Ab initio Prediction of Mechanical, Electronic, Magnetic and Transport Properties of Bulk and Heterostructure of a Novel Fe-Cr based Full Heusler Chalcogenide|Joydipto Bhattacharya,Rajeev Dutt,Aparna Chakrabarti###
(1788027, 1788038)
 Transmission profile ofthe Fe2CrTe/MgO/Fe2CrTe heterojunction has been calculated to probe it asa magnetic tunneling junction (MTJ) material in both the cubic and tetragonalphases.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[312.0, 95, '%', 6],[226.0, 1.26, ',', 5],[69.0, 1000, '%', 1]

Fe3GeTe2
###Ferromagnetism of sputtered Fe3GeTe2 ultrathin films in the absence of two-dimensional crystalline order|Qianwen Zhao,ChaoChao Xia,Hanying Zhang,Baiqing Jiang,Tunan Xie,Kaihua Lou,Chong Bi###
(1788172, 1788176)
Ferromagnetism of sputtered Fe3GeTe2 ultrathin films in the absence of two-dimensional crystalline order.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 2, 'D', 2],[135.0, 2, 'D', 2],[161.0, 2, 'D', 3],[511.0, 2, 'D', 8]

Fe3GeTe2
###Ferromagnetism of sputtered Fe3GeTe2 ultrathin films in the absence of two-dimensional crystalline order|Qianwen Zhao,ChaoChao Xia,Hanying Zhang,Baiqing Jiang,Tunan Xie,Kaihua Lou,Chong Bi###
(1788344, 1788348)
 Here, we choosea typical 2D ferromagnetic material, Fe3GeTe2, to address these two issues byinvestigating its ferromagnetism in an amorphous state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 2, 'D', 1],[33.0, 2, 'D', 1],[7.0, 2, 'D', 0],[339.0, 2, 'D', 5]

Fe3GeTe2
###Ferromagnetism of sputtered Fe3GeTe2 ultrathin films in the absence of two-dimensional crystalline order|Qianwen Zhao,ChaoChao Xia,Hanying Zhang,Baiqing Jiang,Tunan Xie,Kaihua Lou,Chong Bi###
(1788392, 1788396)
 We have fabricatednanometer-thick amorphous Fe3GeTe2 films approaching the monolayer thicknesslimit of crystallized Fe3GeTe2 (0.8 nm) through magnetron sputtering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 2, 'D', 2],[81.0, 2, 'D', 2],[55.0, 2, 'D', 1],[291.0, 2, 'D', 4]

Fe3GeTe2
###Ferromagnetism of sputtered Fe3GeTe2 ultrathin films in the absence of two-dimensional crystalline order|Qianwen Zhao,ChaoChao Xia,Hanying Zhang,Baiqing Jiang,Tunan Xie,Kaihua Lou,Chong Bi###
(1788415, 1788419)
 We have fabricatednanometer-thick amorphous Fe3GeTe2 films approaching the monolayer thicknesslimit of crystallized Fe3GeTe2 (0.8 nm) through magnetron sputtering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 2, 'D', 2],[104.0, 2, 'D', 2],[78.0, 2, 'D', 1],[268.0, 2, 'D', 4]

Fe3GeTe2
###Ferromagnetism of sputtered Fe3GeTe2 ultrathin films in the absence of two-dimensional crystalline order|Qianwen Zhao,ChaoChao Xia,Hanying Zhang,Baiqing Jiang,Tunan Xie,Kaihua Lou,Chong Bi###
(1788441, 1788445)
 Comparedto crystallized Fe3GeTe2, we found that the basic ferromagnetic attributes,such as the Curie temperature that directly reflects magnetic exchangeinteractions and local anisotropic energy, do not change significantly in theamorphous states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[192.0, 2, 'D', 3],[130.0, 2, 'D', 3],[104.0, 2, 'D', 2],[242.0, 2, 'D', 3]

Fe3GeTe2
###Ferromagnetism of sputtered Fe3GeTe2 ultrathin films in the absence of two-dimensional crystalline order|Qianwen Zhao,ChaoChao Xia,Hanying Zhang,Baiqing Jiang,Tunan Xie,Kaihua Lou,Chong Bi###
(1788637, 1788641)
 Thepersistence of ferromagnetism in the ultrathin amorphous counterpart has alsobeen confirmed through magnetoresistance measurements, where two unconventionalswitching dips arising from electrical transport within domain walls areclearly observed in the amorphous Fe3GeTe2 single layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[388.0, 2, 'D', 5],[326.0, 2, 'D', 5],[300.0, 2, 'D', 4],[46.0, 2, 'D', 1]

Fe3GeTe2
###Ferromagnetism of sputtered Fe3GeTe2 ultrathin films in the absence of two-dimensional crystalline order|Qianwen Zhao,ChaoChao Xia,Hanying Zhang,Baiqing Jiang,Tunan Xie,Kaihua Lou,Chong Bi###
(1788671, 1788675)
 These results indicatethat the long-range ferromagnetic order of crystallized Fe3GeTe2 may notcorrelate to the 2D crystalline order and the corresponding ferromagneticattributes can be utilized in an amorphous state which suits large-scalefabrication in a semiconductor technology-compatible manner for spintronicsapplications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[422.0, 2, 'D', 6],[360.0, 2, 'D', 6],[334.0, 2, 'D', 5],[12.0, 2, 'D', 0]

SO
###Leveraging symmetry for an accurate spin-orbit torques characterization in ferrimagnetic insulators|Martín Testa-Anta,Charles-Henri Lambert,Can Onur Avci###
(1788789, 1788790)
 Spin-orbit torques (SOTs) have emerged as an efficient means to electricallycontrol the magnetization in ferromagnetic heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[347.0, -0.14, 'and', 5],[348.0, -0.15, 'mT', 5],[351.0, 1.7, 'x', 5],[359.0, 2, ',', 5]

SO
###Leveraging symmetry for an accurate spin-orbit torques characterization in ferrimagnetic insulators|Martín Testa-Anta,Charles-Henri Lambert,Can Onur Avci###
(1788842, 1788843)
 Lately, anincreasing attention has been devoted to SOTs in heavy metal (HM)/magneticinsulator (M<missing VAR>I) bilayers owing to their tunable magnetic properties andinsulating nature.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[294.0, -0.14, 'and', 4],[295.0, -0.15, 'mT', 4],[298.0, 1.7, 'x', 4],[306.0, 2, ',', 4]

H
###Leveraging symmetry for an accurate spin-orbit torques characterization in ferrimagnetic insulators|Martín Testa-Anta,Charles-Henri Lambert,Can Onur Avci###
(1788853, 1788853)
 Lately, anincreasing attention has been devoted to SOTs in heavy metal (HM)/magneticinsulator (M<missing VAR>I) bilayers owing to their tunable magnetic properties andinsulating nature.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[284.0, -0.14, 'and', 4],[285.0, -0.15, 'mT', 4],[288.0, 1.7, 'x', 4],[296.0, 2, ',', 4]

I
###Leveraging symmetry for an accurate spin-orbit torques characterization in ferrimagnetic insulators|Martín Testa-Anta,Charles-Henri Lambert,Can Onur Avci###
(1788864, 1788864)
 Lately, anincreasing attention has been devoted to SOTs in heavy metal (HM)/magneticinsulator (M<missing VAR>I) bilayers owing to their tunable magnetic properties andinsulating nature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[273.0, -0.14, 'and', 4],[274.0, -0.15, 'mT', 4],[277.0, 1.7, 'x', 4],[285.0, 2, ',', 4]

SO
###Leveraging symmetry for an accurate spin-orbit torques characterization in ferrimagnetic insulators|Martín Testa-Anta,Charles-Henri Lambert,Can Onur Avci###
(1788895, 1788896)
 Quantitative characterization of SOTs in HM/MIheterostructures are, thus, vital for fundamental understanding of charge-spininterrelations and designing novel devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[241.0, -0.14, 'and', 3],[242.0, -0.15, 'mT', 3],[245.0, 1.7, 'x', 3],[253.0, 2, ',', 3]

H
###Leveraging symmetry for an accurate spin-orbit torques characterization in ferrimagnetic insulators|Martín Testa-Anta,Charles-Henri Lambert,Can Onur Avci###
(1788901, 1788901)
 Quantitative characterization of SOTs in HM/MIheterostructures are, thus, vital for fundamental understanding of charge-spininterrelations and designing novel devices.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[236.0, -0.14, 'and', 3],[237.0, -0.15, 'mT', 3],[240.0, 1.7, 'x', 3],[248.0, 2, ',', 3]

I
###Leveraging symmetry for an accurate spin-orbit torques characterization in ferrimagnetic insulators|Martín Testa-Anta,Charles-Henri Lambert,Can Onur Avci###
(1788905, 1788905)
 Quantitative characterization of SOTs in HM/MIheterostructures are, thus, vital for fundamental understanding of charge-spininterrelations and designing novel devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[232.0, -0.14, 'and', 3],[233.0, -0.15, 'mT', 3],[236.0, 1.7, 'x', 3],[244.0, 2, ',', 3]

SO
###Leveraging symmetry for an accurate spin-orbit torques characterization in ferrimagnetic insulators|Martín Testa-Anta,Charles-Henri Lambert,Can Onur Avci###
(1788954, 1788955)
 However, the accurate determinationof SOTs in M<missing VAR>Is have been limited so far due to small electrical signal outputsand dominant spurious thermoelectric effects caused by Joule heating.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[182.0, -0.14, 'and', 2],[183.0, -0.15, 'mT', 2],[186.0, 1.7, 'x', 2],[194.0, 2, ',', 2]

SO
###Leveraging symmetry for an accurate spin-orbit torques characterization in ferrimagnetic insulators|Martín Testa-Anta,Charles-Henri Lambert,Can Onur Avci###
(1789057, 1789058)
 Here, wereport a simple methodology based on harmonic Hall voltage detection andmacrospin simulations to accurately quantify the damping-like and field-likeSOTs, and thermoelectric contributions separately in M<missing VAR>I-based systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, -0.14, 'and', 1],[80.0, -0.15, 'mT', 1],[83.0, 1.7, 'x', 1],[91.0, 2, ',', 1]

I
###Leveraging symmetry for an accurate spin-orbit torques characterization in ferrimagnetic insulators|Martín Testa-Anta,Charles-Henri Lambert,Can Onur Avci###
(1789073, 1789073)
 Here, wereport a simple methodology based on harmonic Hall voltage detection andmacrospin simulations to accurately quantify the damping-like and field-likeSOTs, and thermoelectric contributions separately in M<missing VAR>I-based systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, -0.14, 'and', 1],[65.0, -0.15, 'mT', 1],[68.0, 1.7, 'x', 1],[76.0, 2, ',', 1]

Bi
###Leveraging symmetry for an accurate spin-orbit torques characterization in ferrimagnetic insulators|Martín Testa-Anta,Charles-Henri Lambert,Can Onur Avci###
(1789089, 1789089)
Experiments on the archetypical Bi-doped YIG<missing VAR>/Pt heterostructure using thedeveloped method yield precise values for the field-like and damping-like SOTs,reaching -0.14 and -0.15 mT per 1.7x10 11 A/m<missing VAR>2, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, -0.14, 'and', 0],[49.0, -0.15, 'mT', 0],[52.0, 1.7, 'x', 0],[60.0, 2, ',', 0]

YI
###Leveraging symmetry for an accurate spin-orbit torques characterization in ferrimagnetic insulators|Martín Testa-Anta,Charles-Henri Lambert,Can Onur Avci###
(1789093, 1789094)
Experiments on the archetypical Bi-doped YIG<missing VAR>/Pt heterostructure using thedeveloped method yield precise values for the field-like and damping-like SOTs,reaching -0.14 and -0.15 mT per 1.7x10 11 A/m<missing VAR>2, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, -0.14, 'and', 0],[44.0, -0.15, 'mT', 0],[47.0, 1.7, 'x', 0],[55.0, 2, ',', 0]

Pt
###Leveraging symmetry for an accurate spin-orbit torques characterization in ferrimagnetic insulators|Martín Testa-Anta,Charles-Henri Lambert,Can Onur Avci###
(1789097, 1789097)
Experiments on the archetypical Bi-doped YIG<missing VAR>/Pt heterostructure using thedeveloped method yield precise values for the field-like and damping-like SOTs,reaching -0.14 and -0.15 mT per 1.7x10 11 A/m<missing VAR>2, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, -0.14, 'and', 0],[41.0, -0.15, 'mT', 0],[44.0, 1.7, 'x', 0],[52.0, 2, ',', 0]

SO
###Leveraging symmetry for an accurate spin-orbit torques characterization in ferrimagnetic insulators|Martín Testa-Anta,Charles-Henri Lambert,Can Onur Avci###
(1789130, 1789131)
Experiments on the archetypical Bi-doped YIG<missing VAR>/Pt heterostructure using thedeveloped method yield precise values for the field-like and damping-like SOTs,reaching -0.14 and -0.15 mT per 1.7x10 11 A/m<missing VAR>2, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, -0.14, 'and', 0],[7.0, -0.15, 'mT', 0],[10.0, 1.7, 'x', 0],[18.0, 2, ',', 0]

SO
###Leveraging symmetry for an accurate spin-orbit torques characterization in ferrimagnetic insulators|Martín Testa-Anta,Charles-Henri Lambert,Can Onur Avci###
(1789205, 1789206)
 Wefurther reveal that current-induced Joule heating changes the spin transparencyat the interface, reducing the spin Hall magnetoresistance and damping-likeSOT<missing VAR>, simultaneously.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, -0.14, 'and', 1],[67.0, -0.15, 'mT', 1],[64.0, 1.7, 'x', 1],[56.0, 2, ',', 1]

SO
###Leveraging symmetry for an accurate spin-orbit torques characterization in ferrimagnetic insulators|Martín Testa-Anta,Charles-Henri Lambert,Can Onur Avci###
(1789240, 1789241)
 These results and the devised method can be beneficial forfundamental understanding of SOTs in M<missing VAR>I-based heterostructures and designingnew devices where accurate knowledge of SOTs is necessary.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, -0.14, 'and', 2],[102.0, -0.15, 'mT', 2],[99.0, 1.7, 'x', 2],[91.0, 2, ',', 2]

I
###Leveraging symmetry for an accurate spin-orbit torques characterization in ferrimagnetic insulators|Martín Testa-Anta,Charles-Henri Lambert,Can Onur Avci###
(1789247, 1789247)
 These results and the devised method can be beneficial forfundamental understanding of SOTs in M<missing VAR>I-based heterostructures and designingnew devices where accurate knowledge of SOTs is necessary.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, -0.14, 'and', 2],[109.0, -0.15, 'mT', 2],[106.0, 1.7, 'x', 2],[98.0, 2, ',', 2]

SO
###Leveraging symmetry for an accurate spin-orbit torques characterization in ferrimagnetic insulators|Martín Testa-Anta,Charles-Henri Lambert,Can Onur Avci###
(1789270, 1789271)
 These results and the devised method can be beneficial forfundamental understanding of SOTs in M<missing VAR>I-based heterostructures and designingnew devices where accurate knowledge of SOTs is necessary.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, -0.14, 'and', 2],[132.0, -0.15, 'mT', 2],[129.0, 1.7, 'x', 2],[121.0, 2, ',', 2]

CeRhSb1-xTe
###Non-Fermi liquid behavior of doped Kondo insulator: The unique properties of CeRhSb$_{1-x}$Te$_x$|A. Ślebarski,Józef Spałek,M. Fijałkowski###
(1789311, 1789317)
Non-Fermi liquid behavior of doped Kondo insulator The unique properties of CeRhSb1-xTex<missing VAR>.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[84.0, -10, '%', 1]

CeRhSb
###Non-Fermi liquid behavior of doped Kondo insulator: The unique properties of CeRhSb$_{1-x}$Te$_x$|A. Ślebarski,Józef Spałek,M. Fijałkowski###
(1789333, 1789335)
 It follows from our analysis of CeRhSb that the formation of Kondo insulatorstate due to the presence of the collective spin singlet state is stronglyreduced by its doping with various dopants when their amount exceeds 8--10%,regardless of whether they are substituted for Ce, Rh or Sb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, -10, '%', 0]

Ce
###Non-Fermi liquid behavior of doped Kondo insulator: The unique properties of CeRhSb$_{1-x}$Te$_x$|A. Ślebarski,Józef Spałek,M. Fijałkowski###
(1789421, 1789421)
 It follows from our analysis of CeRhSb that the formation of Kondo insulatorstate due to the presence of the collective spin singlet state is stronglyreduced by its doping with various dopants when their amount exceeds 8--10%,regardless of whether they are substituted for Ce, Rh or Sb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, -10, '%', 0]

Rh
###Non-Fermi liquid behavior of doped Kondo insulator: The unique properties of CeRhSb$_{1-x}$Te$_x$|A. Ślebarski,Józef Spałek,M. Fijałkowski###
(1789424, 1789424)
 It follows from our analysis of CeRhSb that the formation of Kondo insulatorstate due to the presence of the collective spin singlet state is stronglyreduced by its doping with various dopants when their amount exceeds 8--10%,regardless of whether they are substituted for Ce, Rh or Sb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, -10, '%', 0]

Sb
###Non-Fermi liquid behavior of doped Kondo insulator: The unique properties of CeRhSb$_{1-x}$Te$_x$|A. Ślebarski,Józef Spałek,M. Fijałkowski###
(1789428, 1789428)
 It follows from our analysis of CeRhSb that the formation of Kondo insulatorstate due to the presence of the collective spin singlet state is stronglyreduced by its doping with various dopants when their amount exceeds 8--10%,regardless of whether they are substituted for Ce, Rh or Sb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, -10, '%', 0]

C
###Non-Fermi liquid behavior of doped Kondo insulator: The unique properties of CeRhSb$_{1-x}$Te$_x$|A. Ślebarski,Józef Spałek,M. Fijałkowski###
(1789464, 1789464)
 A wide variety ofexperimental results (electrical resistivity rho, magnetic susceptibilitychi, specific heat C, x<missing VAR>-ray photoelectron spectroscopy) and theoreticalinvestigations have convincingly demonstrated the proposed earlier scaling lawchitimesrhoconst.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, -10, '%', 1]

CeRhSb
###Non-Fermi liquid behavior of doped Kondo insulator: The unique properties of CeRhSb$_{1-x}$Te$_x$|A. Ślebarski,Józef Spałek,M. Fijałkowski###
(1789557, 1789559)
 We also analyze the properties of theGriffiths--phase for CeRhSb when Pd substitutes Rh, or Sb is fractionallyreplaced by Te and Sn, whereas doping of Ce with La leads to the formation ofmagnetic cluster structure as a result of the Kondo hole effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, -10, '%', 3]

Pd
###Non-Fermi liquid behavior of doped Kondo insulator: The unique properties of CeRhSb$_{1-x}$Te$_x$|A. Ślebarski,Józef Spałek,M. Fijałkowski###
(1789563, 1789563)
 We also analyze the properties of theGriffiths--phase for CeRhSb when Pd substitutes Rh, or Sb is fractionallyreplaced by Te and Sn, whereas doping of Ce with La leads to the formation ofmagnetic cluster structure as a result of the Kondo hole effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, -10, '%', 3]

Rh
###Non-Fermi liquid behavior of doped Kondo insulator: The unique properties of CeRhSb$_{1-x}$Te$_x$|A. Ślebarski,Józef Spałek,M. Fijałkowski###
(1789567, 1789567)
 We also analyze the properties of theGriffiths--phase for CeRhSb when Pd substitutes Rh, or Sb is fractionallyreplaced by Te and Sn, whereas doping of Ce with La leads to the formation ofmagnetic cluster structure as a result of the Kondo hole effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, -10, '%', 3]

Sb
###Non-Fermi liquid behavior of doped Kondo insulator: The unique properties of CeRhSb$_{1-x}$Te$_x$|A. Ślebarski,Józef Spałek,M. Fijałkowski###
(1789572, 1789572)
 We also analyze the properties of theGriffiths--phase for CeRhSb when Pd substitutes Rh, or Sb is fractionallyreplaced by Te and Sn, whereas doping of Ce with La leads to the formation ofmagnetic cluster structure as a result of the Kondo hole effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[171.0, -10, '%', 3]

Te
###Non-Fermi liquid behavior of doped Kondo insulator: The unique properties of CeRhSb$_{1-x}$Te$_x$|A. Ślebarski,Józef Spałek,M. Fijałkowski###
(1789583, 1789583)
 We also analyze the properties of theGriffiths--phase for CeRhSb when Pd substitutes Rh, or Sb is fractionallyreplaced by Te and Sn, whereas doping of Ce with La leads to the formation ofmagnetic cluster structure as a result of the Kondo hole effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[182.0, -10, '%', 3]

Sn
###Non-Fermi liquid behavior of doped Kondo insulator: The unique properties of CeRhSb$_{1-x}$Te$_x$|A. Ślebarski,Józef Spałek,M. Fijałkowski###
(1789587, 1789587)
 We also analyze the properties of theGriffiths--phase for CeRhSb when Pd substitutes Rh, or Sb is fractionallyreplaced by Te and Sn, whereas doping of Ce with La leads to the formation ofmagnetic cluster structure as a result of the Kondo hole effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, -10, '%', 3]

Ce
###Non-Fermi liquid behavior of doped Kondo insulator: The unique properties of CeRhSb$_{1-x}$Te$_x$|A. Ślebarski,Józef Spałek,M. Fijałkowski###
(1789596, 1789596)
 We also analyze the properties of theGriffiths--phase for CeRhSb when Pd substitutes Rh, or Sb is fractionallyreplaced by Te and Sn, whereas doping of Ce with La leads to the formation ofmagnetic cluster structure as a result of the Kondo hole effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[195.0, -10, '%', 3]

La
###Non-Fermi liquid behavior of doped Kondo insulator: The unique properties of CeRhSb$_{1-x}$Te$_x$|A. Ślebarski,Józef Spałek,M. Fijałkowski###
(1789600, 1789600)
 We also analyze the properties of theGriffiths--phase for CeRhSb when Pd substitutes Rh, or Sb is fractionallyreplaced by Te and Sn, whereas doping of Ce with La leads to the formation ofmagnetic cluster structure as a result of the Kondo hole effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[199.0, -10, '%', 3]

CeRhSb
###Non-Fermi liquid behavior of doped Kondo insulator: The unique properties of CeRhSb$_{1-x}$Te$_x$|A. Ślebarski,Józef Spałek,M. Fijałkowski###
(1789641, 1789643)
Magnetoresistance of CeRhSb and CeRhSb0.98Te0.02 as a function of thefield B shows a -B2 behavior, which provides evidence for thetopologically nontrivial nature of these compounds, as was previously predictedtheoretically for CeRhSb on the basis on the band structure calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[240.0, -10, '%', 4]

CeRhSb0.98Te0.02
###Non-Fermi liquid behavior of doped Kondo insulator: The unique properties of CeRhSb$_{1-x}$Te$_x$|A. Ślebarski,Józef Spałek,M. Fijałkowski###
(1789647, 1789652)
Magnetoresistance of CeRhSb and CeRhSb0.98Te0.02 as a function of thefield B shows a -B2 behavior, which provides evidence for thetopologically nontrivial nature of these compounds, as was previously predictedtheoretically for CeRhSb on the basis on the band structure calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.32666666666666666,0.006666666666666667,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[246.0, -10, '%', 4]

B
###Non-Fermi liquid behavior of doped Kondo insulator: The unique properties of CeRhSb$_{1-x}$Te$_x$|A. Ślebarski,Józef Spałek,M. Fijałkowski###
(1789667, 1789667)
Magnetoresistance of CeRhSb and CeRhSb0.98Te0.02 as a function of thefield B shows a -B2 behavior, which provides evidence for thetopologically nontrivial nature of these compounds, as was previously predictedtheoretically for CeRhSb on the basis on the band structure calculations.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[266.0, -10, '%', 4]

B2
###Non-Fermi liquid behavior of doped Kondo insulator: The unique properties of CeRhSb$_{1-x}$Te$_x$|A. Ślebarski,Józef Spałek,M. Fijałkowski###
(1789674, 1789675)
Magnetoresistance of CeRhSb and CeRhSb0.98Te0.02 as a function of thefield B shows a -B2 behavior, which provides evidence for thetopologically nontrivial nature of these compounds, as was previously predictedtheoretically for CeRhSb on the basis on the band structure calculations.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[273.0, -10, '%', 4]

CeRhSb
###Non-Fermi liquid behavior of doped Kondo insulator: The unique properties of CeRhSb$_{1-x}$Te$_x$|A. Ślebarski,Józef Spałek,M. Fijałkowski###
(1789717, 1789719)
Magnetoresistance of CeRhSb and CeRhSb0.98Te0.02 as a function of thefield B shows a -B2 behavior, which provides evidence for thetopologically nontrivial nature of these compounds, as was previously predictedtheoretically for CeRhSb on the basis on the band structure calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[316.0, -10, '%', 4]

Mn3Si2Te6
###Covalency, correlations, and inter-layer interactions governing the magnetic and electronic structure of Mn$_3$Si$_2$Te$_6$|Chiara Bigi,Lei Qiao,Chao Liu,Paolo Barone,Monica Ciomaga Hatnean,Gesa-R. Siemann,Barat Achinuq,Daniel Alexander Mayoh,Giovanni Vinai,Vincent Polewczyk,Deepak Dagur,Federico Mazzola,Peter Bencok,Thorsten Hesjedal,Gerrit van der Laan,Wei Ren,Geetha Balakrishnan,Silvia Picozzi,Phil D. C. King###
(1789774, 1789779)
Covalency, correlations, and inter-layer interactions governing the magnetic and electronic structure of Mn3Si2Te6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0.2727272727272727,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5454545454545454,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn3Si2Te6
###Covalency, correlations, and inter-layer interactions governing the magnetic and electronic structure of Mn$_3$Si$_2$Te$_6$|Chiara Bigi,Lei Qiao,Chao Liu,Paolo Barone,Monica Ciomaga Hatnean,Gesa-R. Siemann,Barat Achinuq,Daniel Alexander Mayoh,Giovanni Vinai,Vincent Polewczyk,Deepak Dagur,Federico Mazzola,Peter Bencok,Thorsten Hesjedal,Gerrit van der Laan,Wei Ren,Geetha Balakrishnan,Silvia Picozzi,Phil D. C. King###
(1789782, 1789787)
 Mn3Si2Te6 is a rare example of a layered ferrimagnet.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0.2727272727272727,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5454545454545454,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn3Si2Te6
###Covalency, correlations, and inter-layer interactions governing the magnetic and electronic structure of Mn$_3$Si$_2$Te$_6$|Chiara Bigi,Lei Qiao,Chao Liu,Paolo Barone,Monica Ciomaga Hatnean,Gesa-R. Siemann,Barat Achinuq,Daniel Alexander Mayoh,Giovanni Vinai,Vincent Polewczyk,Deepak Dagur,Federico Mazzola,Peter Bencok,Thorsten Hesjedal,Gerrit van der Laan,Wei Ren,Geetha Balakrishnan,Silvia Picozzi,Phil D. C. King###
(1790005, 1790010)
 Here, we combine x<missing VAR>-ray andphotoemission-based spectroscopies with first-principles calculations, to probethe elemental-selective electronic structure and magnetic order inMn3Si2Te6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0.2727272727272727,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5454545454545454,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Covalency, correlations, and inter-layer interactions governing the magnetic and electronic structure of Mn$_3$Si$_2$Te$_6$|Chiara Bigi,Lei Qiao,Chao Liu,Paolo Barone,Monica Ciomaga Hatnean,Gesa-R. Siemann,Barat Achinuq,Daniel Alexander Mayoh,Giovanni Vinai,Vincent Polewczyk,Deepak Dagur,Federico Mazzola,Peter Bencok,Thorsten Hesjedal,Gerrit van der Laan,Wei Ren,Geetha Balakrishnan,Silvia Picozzi,Phil D. C. King###
(1790026, 1790026)
 Through these, we identify a marked Mn-Te hybridisation,which weakens the electronic correlations and enhances the magnetic anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Te
###Covalency, correlations, and inter-layer interactions governing the magnetic and electronic structure of Mn$_3$Si$_2$Te$_6$|Chiara Bigi,Lei Qiao,Chao Liu,Paolo Barone,Monica Ciomaga Hatnean,Gesa-R. Siemann,Barat Achinuq,Daniel Alexander Mayoh,Giovanni Vinai,Vincent Polewczyk,Deepak Dagur,Federico Mazzola,Peter Bencok,Thorsten Hesjedal,Gerrit van der Laan,Wei Ren,Geetha Balakrishnan,Silvia Picozzi,Phil D. C. King###
(1790028, 1790028)
 Through these, we identify a marked Mn-Te hybridisation,which weakens the electronic correlations and enhances the magnetic anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn3Si2Te6
###Covalency, correlations, and inter-layer interactions governing the magnetic and electronic structure of Mn$_3$Si$_2$Te$_6$|Chiara Bigi,Lei Qiao,Chao Liu,Paolo Barone,Monica Ciomaga Hatnean,Gesa-R. Siemann,Barat Achinuq,Daniel Alexander Mayoh,Giovanni Vinai,Vincent Polewczyk,Deepak Dagur,Federico Mazzola,Peter Bencok,Thorsten Hesjedal,Gerrit van der Laan,Wei Ren,Geetha Balakrishnan,Silvia Picozzi,Phil D. C. King###
(1790075, 1790080)
We demonstrate how this strengthens the magnetic frustration inMn3Si2Te6, which is key to stabilising its ferrimagnetic order, andfind a crucial role of both exchange interactions extending beyondnearest-neighbours and anti-symmetric exchange in dictating its orderingtemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0.2727272727272727,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5454545454545454,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn3Si2Te6
###Covalency, correlations, and inter-layer interactions governing the magnetic and electronic structure of Mn$_3$Si$_2$Te$_6$|Chiara Bigi,Lei Qiao,Chao Liu,Paolo Barone,Monica Ciomaga Hatnean,Gesa-R. Siemann,Barat Achinuq,Daniel Alexander Mayoh,Giovanni Vinai,Vincent Polewczyk,Deepak Dagur,Federico Mazzola,Peter Bencok,Thorsten Hesjedal,Gerrit van der Laan,Wei Ren,Geetha Balakrishnan,Silvia Picozzi,Phil D. C. King###
(1790239, 1790244)
 Together, our results demonstrate a powerful methodology of usingexperimental electronic structure probes to constrain the parameter space forfirst-principles calculations of magnetic materials, and through this approach,reveal a pivotal role played by covalency in stabilising the ferrimagneticorder in Mn3Si2Te6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0.2727272727272727,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5454545454545454,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LiF
###First-principles study of enhancement of perpendicular magnetic anisotropy obtained by inserting an ultrathin LiF layer at an Fe/MgO interface|Yukie Kitaoka,Hiroshi Imamura###
(1790283, 1790284)
First-principles study of enhancement of perpendicular magnetic anisotropy obtained by inserting an ultrathin LiF layer at an Fe/MgO interface.
Featurization terminated normally.
0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/MgO
###First-principles study of enhancement of perpendicular magnetic anisotropy obtained by inserting an ultrathin LiF layer at an Fe/MgO interface|Yukie Kitaoka,Hiroshi Imamura###
(1790292, 1790295)
First-principles study of enhancement of perpendicular magnetic anisotropy obtained by inserting an ultrathin LiF layer at an Fe/MgO interface.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

P
###First-principles study of enhancement of perpendicular magnetic anisotropy obtained by inserting an ultrathin LiF layer at an Fe/MgO interface|Yukie Kitaoka,Hiroshi Imamura###
(1790307, 1790307)
 Perpendicular magnetic anisotropy (PM<missing VAR>A) is a key property of magnetoresistiverandom access memory (MRAM).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###First-principles study of enhancement of perpendicular magnetic anisotropy obtained by inserting an ultrathin LiF layer at an Fe/MgO interface|Yukie Kitaoka,Hiroshi Imamura###
(1790375, 1790375)
 To increase areal density of MRAM<missing VAR> it is importantto find a way to enhance the PM<missing VAR>A.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###First-principles study of enhancement of perpendicular magnetic anisotropy obtained by inserting an ultrathin LiF layer at an Fe/MgO interface|Yukie Kitaoka,Hiroshi Imamura###
(1790392, 1790392)
 Recently a strong enhancement of the PM<missing VAR>A byinserting an ultrathin LiF layer at an Fe/MgO interface was reported [T<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LiF
###First-principles study of enhancement of perpendicular magnetic anisotropy obtained by inserting an ultrathin LiF layer at an Fe/MgO interface|Yukie Kitaoka,Hiroshi Imamura###
(1790405, 1790406)
 Recently a strong enhancement of the PM<missing VAR>A byinserting an ultrathin LiF layer at an Fe/MgO interface was reported [T<missing VAR>.
Featurization terminated normally.
0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/MgO
###First-principles study of enhancement of perpendicular magnetic anisotropy obtained by inserting an ultrathin LiF layer at an Fe/MgO interface|Yukie Kitaoka,Hiroshi Imamura###
(1790414, 1790417)
 Recently a strong enhancement of the PM<missing VAR>A byinserting an ultrathin LiF layer at an Fe/MgO interface was reported [T<missing VAR>.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

NP
###First-principles study of enhancement of perpendicular magnetic anisotropy obtained by inserting an ultrathin LiF layer at an Fe/MgO interface|Yukie Kitaoka,Hiroshi Imamura###
(1790438, 1790439)
, NPG<missing VAR> Asia Materials (2022) 14 5].
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###First-principles study of enhancement of perpendicular magnetic anisotropy obtained by inserting an ultrathin LiF layer at an Fe/MgO interface|Yukie Kitaoka,Hiroshi Imamura###
(1790477, 1790477)
 To understand the origin of theobserved enhancement of the PM<missing VAR>A we perform first-principles calculations ofmagetocrystalline anisotropy energy (MAE) of the following four kind ofmultilayer structures Fe/MgO, Fe/LiF/MgO, Fe/FeO/MgO, and Fe/FeF/LiF/MgO.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/MgO
###First-principles study of enhancement of perpendicular magnetic anisotropy obtained by inserting an ultrathin LiF layer at an Fe/MgO interface|Yukie Kitaoka,Hiroshi Imamura###
(1790523, 1790526)
 To understand the origin of theobserved enhancement of the PM<missing VAR>A we perform first-principles calculations ofmagetocrystalline anisotropy energy (MAE) of the following four kind ofmultilayer structures Fe/MgO, Fe/LiF/MgO, Fe/FeO/MgO, and Fe/FeF/LiF/MgO.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Fe/LiF/MgO
###First-principles study of enhancement of perpendicular magnetic anisotropy obtained by inserting an ultrathin LiF layer at an Fe/MgO interface|Yukie Kitaoka,Hiroshi Imamura###
(1790529, 1790535)
 To understand the origin of theobserved enhancement of the PM<missing VAR>A we perform first-principles calculations ofmagetocrystalline anisotropy energy (MAE) of the following four kind ofmultilayer structures Fe/MgO, Fe/LiF/MgO, Fe/FeO/MgO, and Fe/FeF/LiF/MgO.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Fe/FeO/MgO
###First-principles study of enhancement of perpendicular magnetic anisotropy obtained by inserting an ultrathin LiF layer at an Fe/MgO interface|Yukie Kitaoka,Hiroshi Imamura###
(1790538, 1790544)
 To understand the origin of theobserved enhancement of the PM<missing VAR>A we perform first-principles calculations ofmagetocrystalline anisotropy energy (MAE) of the following four kind ofmultilayer structures Fe/MgO, Fe/LiF/MgO, Fe/FeO/MgO, and Fe/FeF/LiF/MgO.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Fe/FeF/LiF/MgO
###First-principles study of enhancement of perpendicular magnetic anisotropy obtained by inserting an ultrathin LiF layer at an Fe/MgO interface|Yukie Kitaoka,Hiroshi Imamura###
(1790549, 1790558)
 To understand the origin of theobserved enhancement of the PM<missing VAR>A we perform first-principles calculations ofmagetocrystalline anisotropy energy (MAE) of the following four kind ofmultilayer structures Fe/MgO, Fe/LiF/MgO, Fe/FeO/MgO, and Fe/FeF/LiF/MgO.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Es
###First-principles study of enhancement of perpendicular magnetic anisotropy obtained by inserting an ultrathin LiF layer at an Fe/MgO interface|Yukie Kitaoka,Hiroshi Imamura###
(1790572, 1790572)
 Wefind that the M<missing VAR>AEs of the Fe/LiF/MgO and the Fe/FeF/LiF/MgO structures arealmost the same as that of the Fe/MgO structure, while the MAE of theFe/FeO/MgO structure is less than a half of that of the Fe/MgO structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0
Abstract does not contain any numbers.

Fe/LiF/MgO
###First-principles study of enhancement of perpendicular magnetic anisotropy obtained by inserting an ultrathin LiF layer at an Fe/MgO interface|Yukie Kitaoka,Hiroshi Imamura###
(1790578, 1790584)
 Wefind that the M<missing VAR>AEs of the Fe/LiF/MgO and the Fe/FeF/LiF/MgO structures arealmost the same as that of the Fe/MgO structure, while the MAE of theFe/FeO/MgO structure is less than a half of that of the Fe/MgO structure.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Fe/FeF/LiF/MgO
###First-principles study of enhancement of perpendicular magnetic anisotropy obtained by inserting an ultrathin LiF layer at an Fe/MgO interface|Yukie Kitaoka,Hiroshi Imamura###
(1790590, 1790599)
 Wefind that the M<missing VAR>AEs of the Fe/LiF/MgO and the Fe/FeF/LiF/MgO structures arealmost the same as that of the Fe/MgO structure, while the MAE of theFe/FeO/MgO structure is less than a half of that of the Fe/MgO structure.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Fe/MgO
###First-principles study of enhancement of perpendicular magnetic anisotropy obtained by inserting an ultrathin LiF layer at an Fe/MgO interface|Yukie Kitaoka,Hiroshi Imamura###
(1790620, 1790623)
 Wefind that the M<missing VAR>AEs of the Fe/LiF/MgO and the Fe/FeF/LiF/MgO structures arealmost the same as that of the Fe/MgO structure, while the MAE of theFe/FeO/MgO structure is less than a half of that of the Fe/MgO structure.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Fe/FeO/MgO
###First-principles study of enhancement of perpendicular magnetic anisotropy obtained by inserting an ultrathin LiF layer at an Fe/MgO interface|Yukie Kitaoka,Hiroshi Imamura###
(1790641, 1790647)
 Wefind that the M<missing VAR>AEs of the Fe/LiF/MgO and the Fe/FeF/LiF/MgO structures arealmost the same as that of the Fe/MgO structure, while the MAE of theFe/FeO/MgO structure is less than a half of that of the Fe/MgO structure.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Fe/MgO
###First-principles study of enhancement of perpendicular magnetic anisotropy obtained by inserting an ultrathin LiF layer at an Fe/MgO interface|Yukie Kitaoka,Hiroshi Imamura###
(1790669, 1790672)
 Wefind that the M<missing VAR>AEs of the Fe/LiF/MgO and the Fe/FeF/LiF/MgO structures arealmost the same as that of the Fe/MgO structure, while the MAE of theFe/FeO/MgO structure is less than a half of that of the Fe/MgO structure.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

P
###First-principles study of enhancement of perpendicular magnetic anisotropy obtained by inserting an ultrathin LiF layer at an Fe/MgO interface|Yukie Kitaoka,Hiroshi Imamura###
(1790702, 1790702)
 Theresults show that the major origin of the enhancement of the PM<missing VAR>A obtained byinserting an ultrathin LiF layer at an Fe/MgO interface is the suppression ofthe mixing of Fe and O atoms at the interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LiF
###First-principles study of enhancement of perpendicular magnetic anisotropy obtained by inserting an ultrathin LiF layer at an Fe/MgO interface|Yukie Kitaoka,Hiroshi Imamura###
(1790717, 1790718)
 Theresults show that the major origin of the enhancement of the PM<missing VAR>A obtained byinserting an ultrathin LiF layer at an Fe/MgO interface is the suppression ofthe mixing of Fe and O atoms at the interface.
Featurization terminated normally.
0,0,0.5,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe/MgO
###First-principles study of enhancement of perpendicular magnetic anisotropy obtained by inserting an ultrathin LiF layer at an Fe/MgO interface|Yukie Kitaoka,Hiroshi Imamura###
(1790726, 1790729)
 Theresults show that the major origin of the enhancement of the PM<missing VAR>A obtained byinserting an ultrathin LiF layer at an Fe/MgO interface is the suppression ofthe mixing of Fe and O atoms at the interface.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Fe
###First-principles study of enhancement of perpendicular magnetic anisotropy obtained by inserting an ultrathin LiF layer at an Fe/MgO interface|Yukie Kitaoka,Hiroshi Imamura###
(1790748, 1790748)
 Theresults show that the major origin of the enhancement of the PM<missing VAR>A obtained byinserting an ultrathin LiF layer at an Fe/MgO interface is the suppression ofthe mixing of Fe and O atoms at the interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###First-principles study of enhancement of perpendicular magnetic anisotropy obtained by inserting an ultrathin LiF layer at an Fe/MgO interface|Yukie Kitaoka,Hiroshi Imamura###
(1790752, 1790752)
 Theresults show that the major origin of the enhancement of the PM<missing VAR>A obtained byinserting an ultrathin LiF layer at an Fe/MgO interface is the suppression ofthe mixing of Fe and O atoms at the interface.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###First-principles study of enhancement of perpendicular magnetic anisotropy obtained by inserting an ultrathin LiF layer at an Fe/MgO interface|Yukie Kitaoka,Hiroshi Imamura###
(1790778, 1790778)
 We also find that the in-planeFe-F coupling gives a positive contribution to the MAE while the in-plane Fe-Ocoupling gives a negative contribution.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###First-principles study of enhancement of perpendicular magnetic anisotropy obtained by inserting an ultrathin LiF layer at an Fe/MgO interface|Yukie Kitaoka,Hiroshi Imamura###
(1790780, 1790780)
 We also find that the in-planeFe-F coupling gives a positive contribution to the MAE while the in-plane Fe-Ocoupling gives a negative contribution.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###First-principles study of enhancement of perpendicular magnetic anisotropy obtained by inserting an ultrathin LiF layer at an Fe/MgO interface|Yukie Kitaoka,Hiroshi Imamura###
(1790808, 1790808)
 We also find that the in-planeFe-F coupling gives a positive contribution to the MAE while the in-plane Fe-Ocoupling gives a negative contribution.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###First-principles study of enhancement of perpendicular magnetic anisotropy obtained by inserting an ultrathin LiF layer at an Fe/MgO interface|Yukie Kitaoka,Hiroshi Imamura###
(1790810, 1790810)
 We also find that the in-planeFe-F coupling gives a positive contribution to the MAE while the in-plane Fe-Ocoupling gives a negative contribution.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###First-principles study of enhancement of perpendicular magnetic anisotropy obtained by inserting an ultrathin LiF layer at an Fe/MgO interface|Yukie Kitaoka,Hiroshi Imamura###
(1790841, 1790841)
 The results are useful for designing ofhigh-PM<missing VAR>A materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn2IrGa
###Spin-valve nature and giant coercivity of a ferrimagnetic spin semimetal Mn$_2$IrGa|Akhilesh Kumar Patel,Y. Venkateswara,S. Shanmukharao Samatham,Archana Lakhani,Jayita Nayak,K. G. Suresh,Aftab Alam###
(1790878, 1790881)
Spin-valve nature and giant coercivity of a ferrimagnetic spin semimetal Mn2IrGa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, 243, 'K', 3],[205.0, 8.5, 'kOe', 4],[209.0, 2, 'K', 4],[303.0, 1, '%', 7],[451.0, 100, '>', 10]

Mn2IrGa
###Spin-valve nature and giant coercivity of a ferrimagnetic spin semimetal Mn$_2$IrGa|Akhilesh Kumar Patel,Y. Venkateswara,S. Shanmukharao Samatham,Archana Lakhani,Jayita Nayak,K. G. Suresh,Aftab Alam###
(1790963, 1790966)
Here, we report Mn2IrGa to be a candidate material for spin semimetal alongwith giant coercivity and spin-valve characteristics using a combinedexperimental and theoretical study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 243, 'K', 1],[120.0, 8.5, 'kOe', 2],[124.0, 2, 'K', 2],[218.0, 1, '%', 5],[366.0, 100, '>', 8]

C
###Spin-valve nature and giant coercivity of a ferrimagnetic spin semimetal Mn$_2$IrGa|Akhilesh Kumar Patel,Y. Venkateswara,S. Shanmukharao Samatham,Archana Lakhani,Jayita Nayak,K. G. Suresh,Aftab Alam###
(1791064, 1791064)
 The alloy crystallizes in an inverseHeusler structure (without any martensitic transition) with a para- toferri-magnetic transition at T<missing VAR>mathrmC sim 243 K.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 243, 'K', 0],[22.0, 8.5, 'kOe', 1],[26.0, 2, 'K', 1],[120.0, 1, '%', 4],[268.0, 100, '>', 7]

Mn2IrGa
###Spin-valve nature and giant coercivity of a ferrimagnetic spin semimetal Mn$_2$IrGa|Akhilesh Kumar Patel,Y. Venkateswara,S. Shanmukharao Samatham,Archana Lakhani,Jayita Nayak,K. G. Suresh,Aftab Alam###
(1791217, 1791220)
 Magnetoresistance (MR) confirms anirreversible nature (with its magnitude sim1%) along with a change of signacross the magnetic transition indicating the potentiality of Mn2IrGa inmagnetic switching applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 243, 'K', 4],[131.0, 8.5, 'kOe', 3],[127.0, 2, 'K', 3],[33.0, 1, '%', 0],[112.0, 100, '>', 3]

In
###Spin-valve nature and giant coercivity of a ferrimagnetic spin semimetal Mn$_2$IrGa|Akhilesh Kumar Patel,Y. Venkateswara,S. Shanmukharao Samatham,Archana Lakhani,Jayita Nayak,K. G. Suresh,Aftab Alam###
(1791232, 1791232)
 In addition, asymmetric nature of MR in thepositive and negative field cycles is indicative of spin-valve characteristics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 243, 'K', 5],[146.0, 8.5, 'kOe', 4],[142.0, 2, 'K', 4],[48.0, 1, '%', 1],[100.0, 100, '>', 2]

B
###Spin-valve nature and giant coercivity of a ferrimagnetic spin semimetal Mn$_2$IrGa|Akhilesh Kumar Patel,Y. Venkateswara,S. Shanmukharao Samatham,Archana Lakhani,Jayita Nayak,K. G. Suresh,Aftab Alam###
(1791328, 1791328)
Our ab-initio calculations confirm the inverse Heusler structure withferrimagnetic ordering to be the lowest energy state, with a saturationmagnetization of 2 mumathrmB.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[261.0, 243, 'K', 6],[242.0, 8.5, 'kOe', 5],[238.0, 2, 'K', 5],[144.0, 1, '%', 2],[4.0, 100, '>', 1]

S
###Spin-valve nature and giant coercivity of a ferrimagnetic spin semimetal Mn$_2$IrGa|Akhilesh Kumar Patel,Y. Venkateswara,S. Shanmukharao Samatham,Archana Lakhani,Jayita Nayak,K. G. Suresh,Aftab Alam###
(1791406, 1791406)
 A large positiveBerry flux at/around Gamma point gives rise to an appreciable anomalous Hallconductivity (sim-180 S/cm).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[339.0, 243, 'K', 8],[320.0, 8.5, 'kOe', 7],[316.0, 2, 'K', 7],[222.0, 1, '%', 4],[74.0, 100, '>', 1]

Fe3GaTe2
###Room-temperature and tunable tunneling magnetoresistance in Fe3GaTe2-based all-2D van der Waals heterojunctions with high spin polarization|Wen Jin,Gaojie Zhang,Hao Wu,Li Yang,Wenfeng Zhang,Haixin Chang###
(1791434, 1791438)
Room-temperature and tunable tunneling magnetoresistance in Fe3GaTe2-based all-2D<missing VAR> van der Waals heterojunctions with high spin polarization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 2, 'D', 3],[261.0, 213, '%', 5],[274.0, 72, '%', 5],[278.0, 10, 'K', 5]

Fe3GaTe2
###Room-temperature and tunable tunneling magnetoresistance in Fe3GaTe2-based all-2D van der Waals heterojunctions with high spin polarization|Wen Jin,Gaojie Zhang,Hao Wu,Li Yang,Wenfeng Zhang,Haixin Chang###
(1791602, 1791606)
 Thediscovery of room-temperature intrinsic ferromagnetic 2D crystal Fe3GaTe2 hassolved the problem and greatly facilitated the realization of practicalspintronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 2, 'D', 0],[93.0, 213, '%', 2],[106.0, 72, '%', 2],[110.0, 10, 'K', 2]

Fe3GaTe2/WS2/Fe3GaTe2
###Room-temperature and tunable tunneling magnetoresistance in Fe3GaTe2-based all-2D van der Waals heterojunctions with high spin polarization|Wen Jin,Gaojie Zhang,Hao Wu,Li Yang,Wenfeng Zhang,Haixin Chang###
(1791659, 1791673)
 Here, we demonstrate a room-temperature MTJ based onFe3GaTe2/WS2/Fe3GaTe2 heterostructure.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[61.0, 2, 'D', 1],[26.0, 213, '%', 1],[39.0, 72, '%', 1],[43.0, 10, 'K', 1]

Fe3GaTe2
###Room-temperature and tunable tunneling magnetoresistance in Fe3GaTe2-based all-2D van der Waals heterojunctions with high spin polarization|Wen Jin,Gaojie Zhang,Hao Wu,Li Yang,Wenfeng Zhang,Haixin Chang###
(1791730, 1791734)
 The tunnelling magnetoresistance (TMR)ratio is up to 213% with high spin polarization of 72% at 10 K, the highestever reported in Fe3GaTe2-based MTJs up to now.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 2, 'D', 2],[31.0, 213, '%', 0],[18.0, 72, '%', 0],[14.0, 10, 'K', 0]

K
###Room-temperature and tunable tunneling magnetoresistance in Fe3GaTe2-based all-2D van der Waals heterojunctions with high spin polarization|Wen Jin,Gaojie Zhang,Hao Wu,Li Yang,Wenfeng Zhang,Haixin Chang###
(1791773, 1791773)
 The tunnelling spin-valvesignal robustly exists at room temperature (300 K) with bias current down to 10n<missing VAR>A.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 2, 'D', 3],[74.0, 213, '%', 1],[61.0, 72, '%', 1],[57.0, 10, 'K', 1]

W
###Room-temperature and tunable tunneling magnetoresistance in Fe3GaTe2-based all-2D van der Waals heterojunctions with high spin polarization|Wen Jin,Gaojie Zhang,Hao Wu,Li Yang,Wenfeng Zhang,Haixin Chang###
(1791871, 1791871)
 Our work sheds light on thepotential application for low-energy consumption all-2D<missing VAR> vdW spintronics andoffers alternative routes for the electronic control of spintronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[273.0, 2, 'D', 5],[172.0, 213, '%', 3],[159.0, 72, '%', 3],[155.0, 10, 'K', 3]

VC
###Characteristic time of transition from write error to retention error in voltage-controlled magnetoresistive random-access memory|Hiroko Arai,Hiroshi Imamura###
(1791955, 1791956)
 Voltage controlled magnetoresistive random access memory (VC MRAM) is apromising candidate for a future low-power high-density memory.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[239.0, 2, ',', 4],[293.0, 96, ',', 7]

VC
###Characteristic time of transition from write error to retention error in voltage-controlled magnetoresistive random-access memory|Hiroko Arai,Hiroshi Imamura###
(1792005, 1792006)
 The main causesof bit errors in VC MRAM<missing VAR> are write error and retention error.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[189.0, 2, ',', 3],[243.0, 96, ',', 6]

As
###Characteristic time of transition from write error to retention error in voltage-controlled magnetoresistive random-access memory|Hiroko Arai,Hiroshi Imamura###
(1792026, 1792026)
 As the size ofthe memory cell decreases, the data retention time decreases, which causes atransition from the write-error-dominant region to the retention-error-dominantregion at a certain operating time.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 2, ',', 2],[223.0, 96, ',', 5]

K0
###Characteristic time of transition from write error to retention error in voltage-controlled magnetoresistive random-access memory|Hiroko Arai,Hiroshi Imamura###
(1792170, 1792171)
 Here we introduce the characteristic timeof the transition from the write-error-dominant region to theretention-error-dominant region and analyze how the characteristic time dependson the effective anisotropy constant, K0.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 2, ',', 1],[78.0, 96, ',', 4]

K0
###Characteristic time of transition from write error to retention error in voltage-controlled magnetoresistive random-access memory|Hiroko Arai,Hiroshi Imamura###
(1792272, 1792273)
 We show that for large K0, t<missing VAR>rm c<missing VAR>increases with increase of K0 similar to tau.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 2, ',', 4],[23.0, 96, ',', 1]

K0
###Characteristic time of transition from write error to retention error in voltage-controlled magnetoresistive random-access memory|Hiroko Arai,Hiroshi Imamura###
(1792290, 1792291)
 We show that for large K0, t<missing VAR>rm c<missing VAR>increases with increase of K0 similar to tau.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 2, ',', 4],[41.0, 96, ',', 1]

VC
###Characteristic time of transition from write error to retention error in voltage-controlled magnetoresistive random-access memory|Hiroko Arai,Hiroshi Imamura###
(1792321, 1792322)
 The characteristic timeis a key parameter for designing the VC MRAM<missing VAR> for the variety of applicationssuch as machine learning and artificial intelligence.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 2, ',', 5],[72.0, 96, ',', 2]

SnH4
###Non-Fermi-Liquid Behavior of Superconducting SnH$_4$|Ivan A. Troyan,Dmitrii V. Semenok,Anna G. Ivanova,Andrey V. Sadakov,Di Zhou,Alexander G. Kvashnin,Ivan A. Kruglov,Oleg A. Sobolevskiy,Marianna V. Lyubutina,Dmitry S. Perekalin,Toni Helm,Stanley W. Tozer,Maxim Bykov,Alexander F. Goncharov,Vladimir M. Pudalov,Igor S. Lyubutin###
(1792375, 1792377)
Non-Fermi-Liquid Behavior of Superconducting SnH4.
Featurization terminated normally.
0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 72, 'K', 2],[189.0, 23, 'meV', 3],[192.0, 180, 'GPa', 3]

Sn
###Non-Fermi-Liquid Behavior of Superconducting SnH$_4$|Ivan A. Troyan,Dmitrii V. Semenok,Anna G. Ivanova,Andrey V. Sadakov,Di Zhou,Alexander G. Kvashnin,Ivan A. Kruglov,Oleg A. Sobolevskiy,Marianna V. Lyubutina,Dmitry S. Perekalin,Toni Helm,Stanley W. Tozer,Maxim Bykov,Alexander F. Goncharov,Vladimir M. Pudalov,Igor S. Lyubutin###
(1792390, 1792390)
 We studied chemical interaction of Sn with H2 by X<missing VAR>-ray diffraction methodsat pressures of 180-210 G<missing VAR>Pa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 72, 'K', 1],[176.0, 23, 'meV', 2],[179.0, 180, 'GPa', 2]

H2
###Non-Fermi-Liquid Behavior of Superconducting SnH$_4$|Ivan A. Troyan,Dmitrii V. Semenok,Anna G. Ivanova,Andrey V. Sadakov,Di Zhou,Alexander G. Kvashnin,Ivan A. Kruglov,Oleg A. Sobolevskiy,Marianna V. Lyubutina,Dmitry S. Perekalin,Toni Helm,Stanley W. Tozer,Maxim Bykov,Alexander F. Goncharov,Vladimir M. Pudalov,Igor S. Lyubutin###
(1792394, 1792395)
 We studied chemical interaction of Sn with H2 by X<missing VAR>-ray diffraction methodsat pressures of 180-210 G<missing VAR>Pa.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 72, 'K', 1],[171.0, 23, 'meV', 2],[174.0, 180, 'GPa', 2]

Pa
###Non-Fermi-Liquid Behavior of Superconducting SnH$_4$|Ivan A. Troyan,Dmitrii V. Semenok,Anna G. Ivanova,Andrey V. Sadakov,Di Zhou,Alexander G. Kvashnin,Ivan A. Kruglov,Oleg A. Sobolevskiy,Marianna V. Lyubutina,Dmitry S. Perekalin,Toni Helm,Stanley W. Tozer,Maxim Bykov,Alexander F. Goncharov,Vladimir M. Pudalov,Igor S. Lyubutin###
(1792419, 1792419)
 We studied chemical interaction of Sn with H2 by X<missing VAR>-ray diffraction methodsat pressures of 180-210 G<missing VAR>Pa.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 72, 'K', 1],[147.0, 23, 'meV', 2],[150.0, 180, 'GPa', 2]

SnH4
###Non-Fermi-Liquid Behavior of Superconducting SnH$_4$|Ivan A. Troyan,Dmitrii V. Semenok,Anna G. Ivanova,Andrey V. Sadakov,Di Zhou,Alexander G. Kvashnin,Ivan A. Kruglov,Oleg A. Sobolevskiy,Marianna V. Lyubutina,Dmitry S. Perekalin,Toni Helm,Stanley W. Tozer,Maxim Bykov,Alexander F. Goncharov,Vladimir M. Pudalov,Igor S. Lyubutin###
(1792430, 1792432)
 A previously unknown tetrahydride SnH4 with acubic structure (fcc) exhibiting superconducting properties below T<missing VAR>C 72 K was obtained; the formation of a high molecular C2/m<missing VAR>-SnH14superhydride and several lower hydrides, fcc SnH2 andC2-Sn12H18, was also detected.
Featurization terminated normally.
0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 72, 'K', 0],[134.0, 23, 'meV', 1],[137.0, 180, 'GPa', 1]

C
###Non-Fermi-Liquid Behavior of Superconducting SnH$_4$|Ivan A. Troyan,Dmitrii V. Semenok,Anna G. Ivanova,Andrey V. Sadakov,Di Zhou,Alexander G. Kvashnin,Ivan A. Kruglov,Oleg A. Sobolevskiy,Marianna V. Lyubutina,Dmitry S. Perekalin,Toni Helm,Stanley W. Tozer,Maxim Bykov,Alexander F. Goncharov,Vladimir M. Pudalov,Igor S. Lyubutin###
(1792456, 1792456)
 A previously unknown tetrahydride SnH4 with acubic structure (fcc) exhibiting superconducting properties below T<missing VAR>C 72 K was obtained; the formation of a high molecular C2/m<missing VAR>-SnH14superhydride and several lower hydrides, fcc SnH2 andC2-Sn12H18, was also detected.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 72, 'K', 0],[110.0, 23, 'meV', 1],[113.0, 180, 'GPa', 1]

C2
###Non-Fermi-Liquid Behavior of Superconducting SnH$_4$|Ivan A. Troyan,Dmitrii V. Semenok,Anna G. Ivanova,Andrey V. Sadakov,Di Zhou,Alexander G. Kvashnin,Ivan A. Kruglov,Oleg A. Sobolevskiy,Marianna V. Lyubutina,Dmitry S. Perekalin,Toni Helm,Stanley W. Tozer,Maxim Bykov,Alexander F. Goncharov,Vladimir M. Pudalov,Igor S. Lyubutin###
(1792478, 1792479)
 A previously unknown tetrahydride SnH4 with acubic structure (fcc) exhibiting superconducting properties below T<missing VAR>C 72 K was obtained; the formation of a high molecular C2/m<missing VAR>-SnH14superhydride and several lower hydrides, fcc SnH2 andC2-Sn12H18, was also detected.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 72, 'K', 0],[87.0, 23, 'meV', 1],[90.0, 180, 'GPa', 1]

SnH14
###Non-Fermi-Liquid Behavior of Superconducting SnH$_4$|Ivan A. Troyan,Dmitrii V. Semenok,Anna G. Ivanova,Andrey V. Sadakov,Di Zhou,Alexander G. Kvashnin,Ivan A. Kruglov,Oleg A. Sobolevskiy,Marianna V. Lyubutina,Dmitry S. Perekalin,Toni Helm,Stanley W. Tozer,Maxim Bykov,Alexander F. Goncharov,Vladimir M. Pudalov,Igor S. Lyubutin###
(1792483, 1792485)
 A previously unknown tetrahydride SnH4 with acubic structure (fcc) exhibiting superconducting properties below T<missing VAR>C 72 K was obtained; the formation of a high molecular C2/m<missing VAR>-SnH14superhydride and several lower hydrides, fcc SnH2 andC2-Sn12H18, was also detected.
Featurization terminated normally.
0.9333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.06666666666666667,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 72, 'K', 0],[81.0, 23, 'meV', 1],[84.0, 180, 'GPa', 1]

SnH2
###Non-Fermi-Liquid Behavior of Superconducting SnH$_4$|Ivan A. Troyan,Dmitrii V. Semenok,Anna G. Ivanova,Andrey V. Sadakov,Di Zhou,Alexander G. Kvashnin,Ivan A. Kruglov,Oleg A. Sobolevskiy,Marianna V. Lyubutina,Dmitry S. Perekalin,Toni Helm,Stanley W. Tozer,Maxim Bykov,Alexander F. Goncharov,Vladimir M. Pudalov,Igor S. Lyubutin###
(1792501, 1792503)
 A previously unknown tetrahydride SnH4 with acubic structure (fcc) exhibiting superconducting properties below T<missing VAR>C 72 K was obtained; the formation of a high molecular C2/m<missing VAR>-SnH14superhydride and several lower hydrides, fcc SnH2 andC2-Sn12H18, was also detected.
Featurization terminated normally.
0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 72, 'K', 0],[63.0, 23, 'meV', 1],[66.0, 180, 'GPa', 1]

C2
###Non-Fermi-Liquid Behavior of Superconducting SnH$_4$|Ivan A. Troyan,Dmitrii V. Semenok,Anna G. Ivanova,Andrey V. Sadakov,Di Zhou,Alexander G. Kvashnin,Ivan A. Kruglov,Oleg A. Sobolevskiy,Marianna V. Lyubutina,Dmitry S. Perekalin,Toni Helm,Stanley W. Tozer,Maxim Bykov,Alexander F. Goncharov,Vladimir M. Pudalov,Igor S. Lyubutin###
(1792508, 1792509)
 A previously unknown tetrahydride SnH4 with acubic structure (fcc) exhibiting superconducting properties below T<missing VAR>C 72 K was obtained; the formation of a high molecular C2/m<missing VAR>-SnH14superhydride and several lower hydrides, fcc SnH2 andC2-Sn12H18, was also detected.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 72, 'K', 0],[57.0, 23, 'meV', 1],[60.0, 180, 'GPa', 1]

Sn12H18
###Non-Fermi-Liquid Behavior of Superconducting SnH$_4$|Ivan A. Troyan,Dmitrii V. Semenok,Anna G. Ivanova,Andrey V. Sadakov,Di Zhou,Alexander G. Kvashnin,Ivan A. Kruglov,Oleg A. Sobolevskiy,Marianna V. Lyubutina,Dmitry S. Perekalin,Toni Helm,Stanley W. Tozer,Maxim Bykov,Alexander F. Goncharov,Vladimir M. Pudalov,Igor S. Lyubutin###
(1792511, 1792514)
 A previously unknown tetrahydride SnH4 with acubic structure (fcc) exhibiting superconducting properties below T<missing VAR>C 72 K was obtained; the formation of a high molecular C2/m<missing VAR>-SnH14superhydride and several lower hydrides, fcc SnH2 andC2-Sn12H18, was also detected.
Featurization terminated normally.
0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 72, 'K', 0],[52.0, 23, 'meV', 1],[55.0, 180, 'GPa', 1]

C
###Non-Fermi-Liquid Behavior of Superconducting SnH$_4$|Ivan A. Troyan,Dmitrii V. Semenok,Anna G. Ivanova,Andrey V. Sadakov,Di Zhou,Alexander G. Kvashnin,Ivan A. Kruglov,Oleg A. Sobolevskiy,Marianna V. Lyubutina,Dmitry S. Perekalin,Toni Helm,Stanley W. Tozer,Maxim Bykov,Alexander F. Goncharov,Vladimir M. Pudalov,Igor S. Lyubutin###
(1792540, 1792540)
 The temperature dependence ofcritical current density J<missing VAR>C(T) in SnH4 yields the superconducting gap2Delta(0)  23 meV at 180 GPa.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 72, 'K', 1],[26.0, 23, 'meV', 0],[29.0, 180, 'GPa', 0]

SnH4
###Non-Fermi-Liquid Behavior of Superconducting SnH$_4$|Ivan A. Troyan,Dmitrii V. Semenok,Anna G. Ivanova,Andrey V. Sadakov,Di Zhou,Alexander G. Kvashnin,Ivan A. Kruglov,Oleg A. Sobolevskiy,Marianna V. Lyubutina,Dmitry S. Perekalin,Toni Helm,Stanley W. Tozer,Maxim Bykov,Alexander F. Goncharov,Vladimir M. Pudalov,Igor S. Lyubutin###
(1792547, 1792549)
 The temperature dependence ofcritical current density J<missing VAR>C(T) in SnH4 yields the superconducting gap2Delta(0)  23 meV at 180 GPa.
Featurization terminated normally.
0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 72, 'K', 1],[17.0, 23, 'meV', 0],[20.0, 180, 'GPa', 0]

SnH4
###Non-Fermi-Liquid Behavior of Superconducting SnH$_4$|Ivan A. Troyan,Dmitrii V. Semenok,Anna G. Ivanova,Andrey V. Sadakov,Di Zhou,Alexander G. Kvashnin,Ivan A. Kruglov,Oleg A. Sobolevskiy,Marianna V. Lyubutina,Dmitry S. Perekalin,Toni Helm,Stanley W. Tozer,Maxim Bykov,Alexander F. Goncharov,Vladimir M. Pudalov,Igor S. Lyubutin###
(1792572, 1792574)
 SnH4 has unusual behavior in strongmagnetic fields B,T<missing VAR>-linear dependences of magnetoresistance and the uppercritical magnetic field BC2(T) propto (T<missing VAR>C - T).
Featurization terminated normally.
0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 72, 'K', 2],[6.0, 23, 'meV', 1],[3.0, 180, 'GPa', 1]

B
###Non-Fermi-Liquid Behavior of Superconducting SnH$_4$|Ivan A. Troyan,Dmitrii V. Semenok,Anna G. Ivanova,Andrey V. Sadakov,Di Zhou,Alexander G. Kvashnin,Ivan A. Kruglov,Oleg A. Sobolevskiy,Marianna V. Lyubutina,Dmitry S. Perekalin,Toni Helm,Stanley W. Tozer,Maxim Bykov,Alexander F. Goncharov,Vladimir M. Pudalov,Igor S. Lyubutin###
(1792591, 1792591)
 SnH4 has unusual behavior in strongmagnetic fields B,T<missing VAR>-linear dependences of magnetoresistance and the uppercritical magnetic field BC2(T) propto (T<missing VAR>C - T).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 72, 'K', 2],[25.0, 23, 'meV', 1],[22.0, 180, 'GPa', 1]

C2
###Non-Fermi-Liquid Behavior of Superconducting SnH$_4$|Ivan A. Troyan,Dmitrii V. Semenok,Anna G. Ivanova,Andrey V. Sadakov,Di Zhou,Alexander G. Kvashnin,Ivan A. Kruglov,Oleg A. Sobolevskiy,Marianna V. Lyubutina,Dmitry S. Perekalin,Toni Helm,Stanley W. Tozer,Maxim Bykov,Alexander F. Goncharov,Vladimir M. Pudalov,Igor S. Lyubutin###
(1792617, 1792618)
 SnH4 has unusual behavior in strongmagnetic fields B,T<missing VAR>-linear dependences of magnetoresistance and the uppercritical magnetic field BC2(T) propto (T<missing VAR>C - T).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 72, 'K', 2],[51.0, 23, 'meV', 1],[48.0, 180, 'GPa', 1]

C
###Non-Fermi-Liquid Behavior of Superconducting SnH$_4$|Ivan A. Troyan,Dmitrii V. Semenok,Anna G. Ivanova,Andrey V. Sadakov,Di Zhou,Alexander G. Kvashnin,Ivan A. Kruglov,Oleg A. Sobolevskiy,Marianna V. Lyubutina,Dmitry S. Perekalin,Toni Helm,Stanley W. Tozer,Maxim Bykov,Alexander F. Goncharov,Vladimir M. Pudalov,Igor S. Lyubutin###
(1792627, 1792627)
 SnH4 has unusual behavior in strongmagnetic fields B,T<missing VAR>-linear dependences of magnetoresistance and the uppercritical magnetic field BC2(T) propto (T<missing VAR>C - T).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[168.0, 72, 'K', 2],[61.0, 23, 'meV', 1],[58.0, 180, 'GPa', 1]

SnH4
###Non-Fermi-Liquid Behavior of Superconducting SnH$_4$|Ivan A. Troyan,Dmitrii V. Semenok,Anna G. Ivanova,Andrey V. Sadakov,Di Zhou,Alexander G. Kvashnin,Ivan A. Kruglov,Oleg A. Sobolevskiy,Marianna V. Lyubutina,Dmitry S. Perekalin,Toni Helm,Stanley W. Tozer,Maxim Bykov,Alexander F. Goncharov,Vladimir M. Pudalov,Igor S. Lyubutin###
(1792686, 1792688)
 Along with this, the temperature dependence ofelectrical resistance of fcc SnH4 in non-superconducting state exhibitsa deviation from what is expected for phonon-mediated scattering described bythe Bloch-Gruneisen model, and is beyond the framework of the Fermi liquidtheory.
Featurization terminated normally.
0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[227.0, 72, 'K', 4],[120.0, 23, 'meV', 3],[117.0, 180, 'GPa', 3]

MoTe2
###Superconducting Diode Effect and Large Magnetochiral Anisotropy in T$_d$-MoTe$_2$ Thin Film|Wan-Shun Du,Weipeng Chen,Yangbo Zhou,Tengfei Zhou,Guangjian Liu,Zongteng Zhang,Zichuan Miao,Hao Jia,Song Liu,Yue Zhao,Zhensheng Zhang,Tingyong Chen,Ning Wang,Wen Huang,Zhen-Bing Tan,Jing-Jing Chen,Da-Peng Yu###
(1792818, 1792820)
Superconducting Diode Effect and Large Magnetochiral Anisotropy in Td-MoTe2 Thin Film.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[216.0, 20, '%', 4]

In
###Superconducting Diode Effect and Large Magnetochiral Anisotropy in T$_d$-MoTe$_2$ Thin Film|Wan-Shun Du,Weipeng Chen,Yangbo Zhou,Tengfei Zhou,Guangjian Liu,Zongteng Zhang,Zichuan Miao,Hao Jia,Song Liu,Yue Zhao,Zhensheng Zhang,Tingyong Chen,Ning Wang,Wen Huang,Zhen-Bing Tan,Jing-Jing Chen,Da-Peng Yu###
(1792827, 1792827)
 In the absence of time-reversal invariance, metals without inversion symmetrymay exhibit nonreciprocal charge transport -- a magnetochiral anisotropy thatmanifests as unequal electrical resistance for opposite current flowdirections.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[209.0, 20, '%', 3]

C
###Superconducting Diode Effect and Large Magnetochiral Anisotropy in T$_d$-MoTe$_2$ Thin Film|Wan-Shun Du,Weipeng Chen,Yangbo Zhou,Tengfei Zhou,Guangjian Liu,Zongteng Zhang,Zichuan Miao,Hao Jia,Song Liu,Yue Zhao,Zhensheng Zhang,Tingyong Chen,Ning Wang,Wen Huang,Zhen-Bing Tan,Jing-Jing Chen,Da-Peng Yu###
(1792955, 1792955)
 Through both D<missing VAR>C and ACmagnetoresistance measurements, we study the nonreciprocal effects in thinfilms of the superconducting noncentrosymmetric type-II Weyl semimetalTd-MoTe2.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 20, '%', 1]

C
###Superconducting Diode Effect and Large Magnetochiral Anisotropy in T$_d$-MoTe$_2$ Thin Film|Wan-Shun Du,Weipeng Chen,Yangbo Zhou,Tengfei Zhou,Guangjian Liu,Zongteng Zhang,Zichuan Miao,Hao Jia,Song Liu,Yue Zhao,Zhensheng Zhang,Tingyong Chen,Ning Wang,Wen Huang,Zhen-Bing Tan,Jing-Jing Chen,Da-Peng Yu###
(1792960, 1792960)
 Through both D<missing VAR>C and ACmagnetoresistance measurements, we study the nonreciprocal effects in thinfilms of the superconducting noncentrosymmetric type-II Weyl semimetalTd-MoTe2.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 20, '%', 1]

II
###Superconducting Diode Effect and Large Magnetochiral Anisotropy in T$_d$-MoTe$_2$ Thin Film|Wan-Shun Du,Weipeng Chen,Yangbo Zhou,Tengfei Zhou,Guangjian Liu,Zongteng Zhang,Zichuan Miao,Hao Jia,Song Liu,Yue Zhao,Zhensheng Zhang,Tingyong Chen,Ning Wang,Wen Huang,Zhen-Bing Tan,Jing-Jing Chen,Da-Peng Yu###
(1792995, 1792996)
 Through both D<missing VAR>C and ACmagnetoresistance measurements, we study the nonreciprocal effects in thinfilms of the superconducting noncentrosymmetric type-II Weyl semimetalTd-MoTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 20, '%', 1]

MoTe2
###Superconducting Diode Effect and Large Magnetochiral Anisotropy in T$_d$-MoTe$_2$ Thin Film|Wan-Shun Du,Weipeng Chen,Yangbo Zhou,Tengfei Zhou,Guangjian Liu,Zongteng Zhang,Zichuan Miao,Hao Jia,Song Liu,Yue Zhao,Zhensheng Zhang,Tingyong Chen,Ning Wang,Wen Huang,Zhen-Bing Tan,Jing-Jing Chen,Da-Peng Yu###
(1793006, 1793008)
 Through both D<missing VAR>C and ACmagnetoresistance measurements, we study the nonreciprocal effects in thinfilms of the superconducting noncentrosymmetric type-II Weyl semimetalTd-MoTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 20, '%', 1]

SI1
###Superconducting Diode Effect and Large Magnetochiral Anisotropy in T$_d$-MoTe$_2$ Thin Film|Wan-Shun Du,Weipeng Chen,Yangbo Zhou,Tengfei Zhou,Guangjian Liu,Zongteng Zhang,Zichuan Miao,Hao Jia,Song Liu,Yue Zhao,Zhensheng Zhang,Tingyong Chen,Ning Wang,Wen Huang,Zhen-Bing Tan,Jing-Jing Chen,Da-Peng Yu###
(1793057, 1793059)
 We report nonreciprocal superconducting critical currents witha diode efficiency close to 20%, and an extreme magnetochiral anisotropycoefficient up to SI1e<missing VAR>9perteslaperampere, under weak out-of-planemagnetic field in the millitesla range.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 20, '%', 0]

MoTe2
###Superconducting Diode Effect and Large Magnetochiral Anisotropy in T$_d$-MoTe$_2$ Thin Film|Wan-Shun Du,Weipeng Chen,Yangbo Zhou,Tengfei Zhou,Guangjian Liu,Zongteng Zhang,Zichuan Miao,Hao Jia,Song Liu,Yue Zhao,Zhensheng Zhang,Tingyong Chen,Ning Wang,Wen Huang,Zhen-Bing Tan,Jing-Jing Chen,Da-Peng Yu###
(1793201, 1793203)
 We develop aphenomenological theory to demonstrate that this peculiar behavior can beattributed to the asymmetric structure of spin-orbit coupling inTd-MoTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 20, '%', 2]

MoTe2
###Superconducting Diode Effect and Large Magnetochiral Anisotropy in T$_d$-MoTe$_2$ Thin Film|Wan-Shun Du,Weipeng Chen,Yangbo Zhou,Tengfei Zhou,Guangjian Liu,Zongteng Zhang,Zichuan Miao,Hao Jia,Song Liu,Yue Zhao,Zhensheng Zhang,Tingyong Chen,Ning Wang,Wen Huang,Zhen-Bing Tan,Jing-Jing Chen,Da-Peng Yu###
(1793266, 1793268)
 Our work demonstrates that Td-MoTe2 offers anaccessible material platform for the practical application of superconductingdiodes under a relatively weak magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[230.0, 20, '%', 4]

S
###Enhancing Spin Transfer Torque in Magnetic Tunnel Junction Devices: Exploring the Influence of Capping Layer Materials and Thickness on Device Characteristics|Tahereh Sadat Parvini,Elvira Paz,Tim Böhnert,Alejandro Schulman,Luana Benetti,Felix Oberbauer,Jakob Walowski,Farshad Moradi,Ricardo Ferreira,Markus Münzenberg###
(1793390, 1793390)
 We have developed and optimized two categories of spin transfer torquemagnetic tunnel junctions (STT-MTJs) that exhibit a high tunnelmagnetoresistance (TMR) ratio, low critical current, high outputpower in themicro watt range, and auto-oscillation behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 2, 'CoFeB', 2],[198.0, 2, 'CoFeB', 2]

S
###Enhancing Spin Transfer Torque in Magnetic Tunnel Junction Devices: Exploring the Influence of Capping Layer Materials and Thickness on Device Characteristics|Tahereh Sadat Parvini,Elvira Paz,Tim Böhnert,Alejandro Schulman,Luana Benetti,Felix Oberbauer,Jakob Walowski,Farshad Moradi,Ricardo Ferreira,Markus Münzenberg###
(1793466, 1793466)
 These characteristicsdemonstrate the potential of STT-MTJs for low-power, high-speed, and reliablespintronic applications, including magnetic memory, logic, and signalprocessing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 2, 'CoFeB', 1],[122.0, 2, 'CoFeB', 1]

B
###Enhancing Spin Transfer Torque in Magnetic Tunnel Junction Devices: Exploring the Influence of Capping Layer Materials and Thickness on Device Characteristics|Tahereh Sadat Parvini,Elvira Paz,Tim Böhnert,Alejandro Schulman,Luana Benetti,Felix Oberbauer,Jakob Walowski,Farshad Moradi,Ricardo Ferreira,Markus Münzenberg###
(1793544, 1793544)
 The only distinguishing factor between the two categories, denotedas A-MTJs and B-MTJs, is the composition of their free layers, 2 CoFeB/0.21Ta/6 CoFeSiB for A-MTJs and 2 CoFeB/0.21 Ta/7 NiFe for B-MTJs.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 2, 'CoFeB', 0],[44.0, 2, 'CoFeB', 0]

Ta
###Enhancing Spin Transfer Torque in Magnetic Tunnel Junction Devices: Exploring the Influence of Capping Layer Materials and Thickness on Device Characteristics|Tahereh Sadat Parvini,Elvira Paz,Tim Böhnert,Alejandro Schulman,Luana Benetti,Felix Oberbauer,Jakob Walowski,Farshad Moradi,Ricardo Ferreira,Markus Münzenberg###
(1793570, 1793570)
 The only distinguishing factor between the two categories, denotedas A-MTJs and B-MTJs, is the composition of their free layers, 2 CoFeB/0.21Ta/6 CoFeSiB for A-MTJs and 2 CoFeB/0.21 Ta/7 NiFe for B-MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 2, 'CoFeB', 0],[18.0, 2, 'CoFeB', 0]

CoFeSiB
###Enhancing Spin Transfer Torque in Magnetic Tunnel Junction Devices: Exploring the Influence of Capping Layer Materials and Thickness on Device Characteristics|Tahereh Sadat Parvini,Elvira Paz,Tim Böhnert,Alejandro Schulman,Luana Benetti,Felix Oberbauer,Jakob Walowski,Farshad Moradi,Ricardo Ferreira,Markus Münzenberg###
(1793574, 1793577)
 The only distinguishing factor between the two categories, denotedas A-MTJs and B-MTJs, is the composition of their free layers, 2 CoFeB/0.21Ta/6 CoFeSiB for A-MTJs and 2 CoFeB/0.21 Ta/7 NiFe for B-MTJs.
Featurization terminated normally.
0,0,0,0,0.25,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 2, 'CoFeB', 0],[11.0, 2, 'CoFeB', 0]

Ta
###Enhancing Spin Transfer Torque in Magnetic Tunnel Junction Devices: Exploring the Influence of Capping Layer Materials and Thickness on Device Characteristics|Tahereh Sadat Parvini,Elvira Paz,Tim Böhnert,Alejandro Schulman,Luana Benetti,Felix Oberbauer,Jakob Walowski,Farshad Moradi,Ricardo Ferreira,Markus Münzenberg###
(1793592, 1793592)
 The only distinguishing factor between the two categories, denotedas A-MTJs and B-MTJs, is the composition of their free layers, 2 CoFeB/0.21Ta/6 CoFeSiB for A-MTJs and 2 CoFeB/0.21 Ta/7 NiFe for B-MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 2, 'CoFeB', 0],[4.0, 2, 'CoFeB', 0]

NiFe
###Enhancing Spin Transfer Torque in Magnetic Tunnel Junction Devices: Exploring the Influence of Capping Layer Materials and Thickness on Device Characteristics|Tahereh Sadat Parvini,Elvira Paz,Tim Böhnert,Alejandro Schulman,Luana Benetti,Felix Oberbauer,Jakob Walowski,Farshad Moradi,Ricardo Ferreira,Markus Münzenberg###
(1793596, 1793597)
 The only distinguishing factor between the two categories, denotedas A-MTJs and B-MTJs, is the composition of their free layers, 2 CoFeB/0.21Ta/6 CoFeSiB for A-MTJs and 2 CoFeB/0.21 Ta/7 NiFe for B-MTJs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 2, 'CoFeB', 0],[8.0, 2, 'CoFeB', 0]

B
###Enhancing Spin Transfer Torque in Magnetic Tunnel Junction Devices: Exploring the Influence of Capping Layer Materials and Thickness on Device Characteristics|Tahereh Sadat Parvini,Elvira Paz,Tim Böhnert,Alejandro Schulman,Luana Benetti,Felix Oberbauer,Jakob Walowski,Farshad Moradi,Ricardo Ferreira,Markus Münzenberg###
(1793601, 1793601)
 The only distinguishing factor between the two categories, denotedas A-MTJs and B-MTJs, is the composition of their free layers, 2 CoFeB/0.21Ta/6 CoFeSiB for A-MTJs and 2 CoFeB/0.21 Ta/7 NiFe for B-MTJs.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 2, 'CoFeB', 0],[13.0, 2, 'CoFeB', 0]

B
###Enhancing Spin Transfer Torque in Magnetic Tunnel Junction Devices: Exploring the Influence of Capping Layer Materials and Thickness on Device Characteristics|Tahereh Sadat Parvini,Elvira Paz,Tim Böhnert,Alejandro Schulman,Luana Benetti,Felix Oberbauer,Jakob Walowski,Farshad Moradi,Ricardo Ferreira,Markus Münzenberg###
(1793617, 1793617)
 Our studyreveals that B-MTJs exhibit lower critical currents for auto-oscillation thanA-MTJs.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 2, 'CoFeB', 1],[29.0, 2, 'CoFeB', 1]

B
###Enhancing Spin Transfer Torque in Magnetic Tunnel Junction Devices: Exploring the Influence of Capping Layer Materials and Thickness on Device Characteristics|Tahereh Sadat Parvini,Elvira Paz,Tim Böhnert,Alejandro Schulman,Luana Benetti,Felix Oberbauer,Jakob Walowski,Farshad Moradi,Ricardo Ferreira,Markus Münzenberg###
(1793714, 1793714)
 We found that both stacks have comparable saturation magnetization andanisotropy field, suggesting that the difference in auto-oscillation behavioris due to the higher damping of A-MTJs compared to B-MTJs.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 2, 'CoFeB', 2],[126.0, 2, 'CoFeB', 2]

OK
###Enhancing Spin Transfer Torque in Magnetic Tunnel Junction Devices: Exploring the Influence of Capping Layer Materials and Thickness on Device Characteristics|Tahereh Sadat Parvini,Elvira Paz,Tim Böhnert,Alejandro Schulman,Luana Benetti,Felix Oberbauer,Jakob Walowski,Farshad Moradi,Ricardo Ferreira,Markus Münzenberg###
(1793758, 1793759)
 To verify thishypothesis, we employed the all-optical time-resolved magneto-optical Kerreffect (TRMOKE) technique, which confirmed that STT-MTJs with lower dampingexhibited auto-oscillation at lower critical current values.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[193.0, 2, 'CoFeB', 3],[170.0, 2, 'CoFeB', 3]

S
###Enhancing Spin Transfer Torque in Magnetic Tunnel Junction Devices: Exploring the Influence of Capping Layer Materials and Thickness on Device Characteristics|Tahereh Sadat Parvini,Elvira Paz,Tim Böhnert,Alejandro Schulman,Luana Benetti,Felix Oberbauer,Jakob Walowski,Farshad Moradi,Ricardo Ferreira,Markus Münzenberg###
(1793772, 1793772)
 To verify thishypothesis, we employed the all-optical time-resolved magneto-optical Kerreffect (TRMOKE) technique, which confirmed that STT-MTJs with lower dampingexhibited auto-oscillation at lower critical current values.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[207.0, 2, 'CoFeB', 3],[184.0, 2, 'CoFeB', 3]

S
###Enhancing Spin Transfer Torque in Magnetic Tunnel Junction Devices: Exploring the Influence of Capping Layer Materials and Thickness on Device Characteristics|Tahereh Sadat Parvini,Elvira Paz,Tim Böhnert,Alejandro Schulman,Luana Benetti,Felix Oberbauer,Jakob Walowski,Farshad Moradi,Ricardo Ferreira,Markus Münzenberg###
(1793820, 1793820)
 Additionally, ourstudy aimed to optimize the STT-MTJ performance by investigating the impact ofthe capping layer on the devices<missing VAR> response to electronic and optical stimuli.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[255.0, 2, 'CoFeB', 4],[232.0, 2, 'CoFeB', 4]

PdSn4
###Weak Antilocalization and topological edge states in PdSn$_4$|N. K. Karn,M. M. Sharma,V. P. S. Awana###
(1793889, 1793891)
Weak Antilocalization and topological edge states in PdSn4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[212.0, 2, 'K', 4]

PdSn4
###Weak Antilocalization and topological edge states in PdSn$_4$|N. K. Karn,M. M. Sharma,V. P. S. Awana###
(1793929, 1793931)
 Here we report, the successful synthesis of single crystals of topologicalsemimetal (TSM) candidate, PdSn4 using the self-grown route.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[172.0, 2, 'K', 3]

F
###Weak Antilocalization and topological edge states in PdSn$_4$|N. K. Karn,M. M. Sharma,V. P. S. Awana###
(1793984, 1793984)
 The synthesizedcrystal is well characterized through X<missing VAR>-ray diffraction (XRD), field emissionscanning electron microscopy (FESEM), and X<missing VAR>-ray photoelectron spectroscopy(X<missing VAR>PS).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 2, 'K', 2]

S
###Weak Antilocalization and topological edge states in PdSn$_4$|N. K. Karn,M. M. Sharma,V. P. S. Awana###
(1794006, 1794006)
 The synthesizedcrystal is well characterized through X<missing VAR>-ray diffraction (XRD), field emissionscanning electron microscopy (FESEM), and X<missing VAR>-ray photoelectron spectroscopy(X<missing VAR>PS).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 2, 'K', 2]

PdSn4
###Weak Antilocalization and topological edge states in PdSn$_4$|N. K. Karn,M. M. Sharma,V. P. S. Awana###
(1794030, 1794032)
 Detailed Rietveld analysis of the powder XRD pattern of PdSn4confirmed the same to crystallize in the Aea2 space group instead of reportedCcce.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 2, 'K', 1]

W
###Weak Antilocalization and topological edge states in PdSn$_4$|N. K. Karn,M. M. Sharma,V. P. S. Awana###
(1794120, 1794120)
 The presence of aweak antilocalization (WAL) effect in synthesized PdSn4 crystal is confirmedand analyzed using Hikami Larkin Nagaoka (HL<missing VAR>N) formalism, being applied onmagnetoconductivity of the same at the low magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 2, 'K', 1]

PdSn4
###Weak Antilocalization and topological edge states in PdSn$_4$|N. K. Karn,M. M. Sharma,V. P. S. Awana###
(1794131, 1794133)
 The presence of aweak antilocalization (WAL) effect in synthesized PdSn4 crystal is confirmedand analyzed using Hikami Larkin Nagaoka (HL<missing VAR>N) formalism, being applied onmagnetoconductivity of the same at the low magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 2, 'K', 1]

H
###Weak Antilocalization and topological edge states in PdSn$_4$|N. K. Karn,M. M. Sharma,V. P. S. Awana###
(1794155, 1794155)
 The presence of aweak antilocalization (WAL) effect in synthesized PdSn4 crystal is confirmedand analyzed using Hikami Larkin Nagaoka (HL<missing VAR>N) formalism, being applied onmagnetoconductivity of the same at the low magnetic field.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 2, 'K', 1]

N
###Weak Antilocalization and topological edge states in PdSn$_4$|N. K. Karn,M. M. Sharma,V. P. S. Awana###
(1794157, 1794157)
 The presence of aweak antilocalization (WAL) effect in synthesized PdSn4 crystal is confirmedand analyzed using Hikami Larkin Nagaoka (HL<missing VAR>N) formalism, being applied onmagnetoconductivity of the same at the low magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 2, 'K', 1]

PdSn4
###Weak Antilocalization and topological edge states in PdSn$_4$|N. K. Karn,M. M. Sharma,V. P. S. Awana###
(1794245, 1794247)
 An extended Kohlerrule is implemented on MR data, to determine the role of the scattering processand temperature-dependent carrier density on transport phenomenon in PdSn4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 2, 'K', 2]

PdSn4
###Weak Antilocalization and topological edge states in PdSn$_4$|N. K. Karn,M. M. Sharma,V. P. S. Awana###
(1794352, 1794354)
 Thecalculated Z<missing VAR>2 invariants suggest the presence of weak topological insulatingproperties in PdSn4.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[249.0, 2, 'K', 5]

PdSn4
###Weak Antilocalization and topological edge states in PdSn$_4$|N. K. Karn,M. M. Sharma,V. P. S. Awana###
(1794406, 1794408)
 This is the firstreport on PdSn4, showing the presence of SdH oscillation in magnetotransport measurement.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[303.0, 2, 'K', 7]

H
###Weak Antilocalization and topological edge states in PdSn$_4$|N. K. Karn,M. M. Sharma,V. P. S. Awana###
(1794420, 1794420)
 This is the firstreport on PdSn4, showing the presence of SdH oscillation in magnetotransport measurement.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[317.0, 2, 'K', 7]

Bi
###Studies on the proximity effect in Bi-based high-temperature superconductor/manganite heterostructures|V. Gayathri,E. P. Amaladass,A. T. Sathyanarayana,T. Geetha Kumary,R. Pandian,P. Gupta,S. K. Rai,A. Mani###
(1794454, 1794454)
Studies on the proximity effect in Bi-based high-temperature superconductor/manganite heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pr
###Studies on the proximity effect in Bi-based high-temperature superconductor/manganite heterostructures|V. Gayathri,E. P. Amaladass,A. T. Sathyanarayana,T. Geetha Kumary,R. Pandian,P. Gupta,S. K. Rai,A. Mani###
(1794487, 1794487)
 The effect of proximity of the magnetism of the Pr-based manganite(Pr0.6Sr0.4MnO3) on the superconductivity of Bi-based high-temperaturesuperconductor (Bi1.75Pb0.25Sr2Ca2Cu3O10d) was studied based on the resultsobtained from the magnetotransport and magnetization measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(Pr0.6Sr0.4MnO3)
###Studies on the proximity effect in Bi-based high-temperature superconductor/manganite heterostructures|V. Gayathri,E. P. Amaladass,A. T. Sathyanarayana,T. Geetha Kumary,R. Pandian,P. Gupta,S. K. Rai,A. Mani###
(1794494, 1794502)
 The effect of proximity of the magnetism of the Pr-based manganite(Pr0.6Sr0.4MnO3) on the superconductivity of Bi-based high-temperaturesuperconductor (Bi1.75Pb0.25Sr2Ca2Cu3O10d) was studied based on the resultsobtained from the magnetotransport and magnetization measurements.
Featurization successful!
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.08,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.12,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi
###Studies on the proximity effect in Bi-based high-temperature superconductor/manganite heterostructures|V. Gayathri,E. P. Amaladass,A. T. Sathyanarayana,T. Geetha Kumary,R. Pandian,P. Gupta,S. K. Rai,A. Mani###
(1794512, 1794512)
 The effect of proximity of the magnetism of the Pr-based manganite(Pr0.6Sr0.4MnO3) on the superconductivity of Bi-based high-temperaturesuperconductor (Bi1.75Pb0.25Sr2Ca2Cu3O10d) was studied based on the resultsobtained from the magnetotransport and magnetization measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi1.75Pb0.25Sr2Ca2Cu3O10
###Studies on the proximity effect in Bi-based high-temperature superconductor/manganite heterostructures|V. Gayathri,E. P. Amaladass,A. T. Sathyanarayana,T. Geetha Kumary,R. Pandian,P. Gupta,S. K. Rai,A. Mani###
(1794524, 1794535)
 The effect of proximity of the magnetism of the Pr-based manganite(Pr0.6Sr0.4MnO3) on the superconductivity of Bi-based high-temperaturesuperconductor (Bi1.75Pb0.25Sr2Ca2Cu3O10d) was studied based on the resultsobtained from the magnetotransport and magnetization measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5263157894736842,0,0,0,0,0,0,0,0,0,0,0,0.10526315789473684,0,0,0,0,0,0,0,0,0.15789473684210525,0,0,0,0,0,0,0,0,0.10526315789473684,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.013157894736842105,0.09210526315789473,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C2
###Studies on the proximity effect in Bi-based high-temperature superconductor/manganite heterostructures|V. Gayathri,E. P. Amaladass,A. T. Sathyanarayana,T. Geetha Kumary,R. Pandian,P. Gupta,S. K. Rai,A. Mani###
(1794588, 1794589)
 Decrease inthe values of the upper critical field (HC2(0)) and an increase in the width ofthe superconducting transition (Delta T<missing VAR>C) of Bi1.75Pb0.25Sr2Ca2Cu3O10d<missing VAR> wereobserved in proximity with the manganite.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Studies on the proximity effect in Bi-based high-temperature superconductor/manganite heterostructures|V. Gayathri,E. P. Amaladass,A. T. Sathyanarayana,T. Geetha Kumary,R. Pandian,P. Gupta,S. K. Rai,A. Mani###
(1794620, 1794620)
 Decrease inthe values of the upper critical field (HC2(0)) and an increase in the width ofthe superconducting transition (Delta T<missing VAR>C) of Bi1.75Pb0.25Sr2Ca2Cu3O10d<missing VAR> wereobserved in proximity with the manganite.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi1.75Pb0.25Sr2Ca2Cu3O10
###Studies on the proximity effect in Bi-based high-temperature superconductor/manganite heterostructures|V. Gayathri,E. P. Amaladass,A. T. Sathyanarayana,T. Geetha Kumary,R. Pandian,P. Gupta,S. K. Rai,A. Mani###
(1794625, 1794636)
 Decrease inthe values of the upper critical field (HC2(0)) and an increase in the width ofthe superconducting transition (Delta T<missing VAR>C) of Bi1.75Pb0.25Sr2Ca2Cu3O10d<missing VAR> wereobserved in proximity with the manganite.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5263157894736842,0,0,0,0,0,0,0,0,0,0,0,0.10526315789473684,0,0,0,0,0,0,0,0,0.15789473684210525,0,0,0,0,0,0,0,0,0.10526315789473684,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.013157894736842105,0.09210526315789473,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi1.75Pb0.25Sr2Ca2Cu3O10
###Studies on the proximity effect in Bi-based high-temperature superconductor/manganite heterostructures|V. Gayathri,E. P. Amaladass,A. T. Sathyanarayana,T. Geetha Kumary,R. Pandian,P. Gupta,S. K. Rai,A. Mani###
(1794751, 1794762)
 The combined effect of magneticexchange interaction arising from the manganite, the leakage of Cooper-pairsfrom the superconductor into the manganite, and the diffusion and transport ofspin-polarized electrons from the manganite into the superconductor were foundto modify the superconducting properties of Bi1.75Pb0.25Sr2Ca2Cu3O10d<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5263157894736842,0,0,0,0,0,0,0,0,0,0,0,0.10526315789473684,0,0,0,0,0,0,0,0,0.15789473684210525,0,0,0,0,0,0,0,0,0.10526315789473684,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.013157894736842105,0.09210526315789473,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Studies on the proximity effect in Bi-based high-temperature superconductor/manganite heterostructures|V. Gayathri,E. P. Amaladass,A. T. Sathyanarayana,T. Geetha Kumary,R. Pandian,P. Gupta,S. K. Rai,A. Mani###
(1794811, 1794811)
 As a consequenceof the proximity effect, the colossal-magnetoresistance (CMR) ratio as high as 99 % observed in the heterostructure makes the thin film heterostructurespromising candidates for potential technological applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Studies on the proximity effect in Bi-based high-temperature superconductor/manganite heterostructures|V. Gayathri,E. P. Amaladass,A. T. Sathyanarayana,T. Geetha Kumary,R. Pandian,P. Gupta,S. K. Rai,A. Mani###
(1794834, 1794834)
 As a consequenceof the proximity effect, the colossal-magnetoresistance (CMR) ratio as high as 99 % observed in the heterostructure makes the thin film heterostructurespromising candidates for potential technological applications.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CuMnAs
###Terahertz probing of anisotropic conductivity and morphology of CuMnAs epitaxial thin films|Peter Kubaščík,Andrej Farkaš,Kamil Olejník,Tinkara Troha,Matěj Hývl,Filip Krizek,Deep C. Joshi,Tomáš Ostatnický,Jiří Jechumtál,Eva Schmoranzerová,Richard P. Campion,Jakub Zázvorka,Vít Novák,Petr Kužel,Tomáš Jungwirth,Petr Němec,Lukáš Nádvorník###
(1794909, 1794911)
Terahertz probing of anisotropic conductivity and morphology of CuMnAs epitaxial thin films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CuMnAs
###Terahertz probing of anisotropic conductivity and morphology of CuMnAs epitaxial thin films|Peter Kubaščík,Andrej Farkaš,Kamil Olejník,Tinkara Troha,Matěj Hývl,Filip Krizek,Deep C. Joshi,Tomáš Ostatnický,Jiří Jechumtál,Eva Schmoranzerová,Richard P. Campion,Jakub Zázvorka,Vít Novák,Petr Kužel,Tomáš Jungwirth,Petr Němec,Lukáš Nádvorník###
(1794922, 1794924)
 Antiferromagnetic CuMnAs thin films have attracted attention since thediscovery of the manipulation of their magnetic structure via electrical,optical, and terahertz pulses of electric fields, enabling convenientapproaches to the switching between magnetoresistive states of the film for theinformation storage.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Terahertz probing of anisotropic conductivity and morphology of CuMnAs epitaxial thin films|Peter Kubaščík,Andrej Farkaš,Kamil Olejník,Tinkara Troha,Matěj Hývl,Filip Krizek,Deep C. Joshi,Tomáš Ostatnický,Jiří Jechumtál,Eva Schmoranzerová,Richard P. Campion,Jakub Zázvorka,Vít Novák,Petr Kužel,Tomáš Jungwirth,Petr Němec,Lukáš Nádvorník###
(1795062, 1795062)
In this study, we investigate the properties of CuMnAs thin films by probingthe defect-related uniaxial anisotropy of electric conductivity by contact-freeterahertz transmission spectroscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CuMnAs
###Terahertz probing of anisotropic conductivity and morphology of CuMnAs epitaxial thin films|Peter Kubaščík,Andrej Farkaš,Kamil Olejník,Tinkara Troha,Matěj Hývl,Filip Krizek,Deep C. Joshi,Tomáš Ostatnický,Jiří Jechumtál,Eva Schmoranzerová,Richard P. Campion,Jakub Zázvorka,Vít Novák,Petr Kužel,Tomáš Jungwirth,Petr Němec,Lukáš Nádvorník###
(1795079, 1795081)
In this study, we investigate the properties of CuMnAs thin films by probingthe defect-related uniaxial anisotropy of electric conductivity by contact-freeterahertz transmission spectroscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Terahertz probing of anisotropic conductivity and morphology of CuMnAs epitaxial thin films|Peter Kubaščík,Andrej Farkaš,Kamil Olejník,Tinkara Troha,Matěj Hývl,Filip Krizek,Deep C. Joshi,Tomáš Ostatnický,Jiří Jechumtál,Eva Schmoranzerová,Richard P. Campion,Jakub Zázvorka,Vít Novák,Petr Kužel,Tomáš Jungwirth,Petr Němec,Lukáš Nádvorník###
(1795158, 1795158)
 We show that the terahertz measurementsconveniently detect the conductivity anisotropy, that are consistent withconventional D<missing VAR>C Hall-bar measurements.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CuMnAs
###Terahertz probing of anisotropic conductivity and morphology of CuMnAs epitaxial thin films|Peter Kubaščík,Andrej Farkaš,Kamil Olejník,Tinkara Troha,Matěj Hývl,Filip Krizek,Deep C. Joshi,Tomáš Ostatnický,Jiří Jechumtál,Eva Schmoranzerová,Richard P. Campion,Jakub Zázvorka,Vít Novák,Petr Kužel,Tomáš Jungwirth,Petr Němec,Lukáš Nádvorník###
(1795298, 1795300)
 Using scanning near-field terahertz and electronmicroscopies, we relate the observed anisotropic conductivity of CuMnAs to theelongation and orientation of growth defects, which influence the localmicroscopic conductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YBa2Cu3O7
###Angle-dependent Magnetoresistance of an Ordered Bose Glass of Vortices in YBa$_{2}$Cu$_{3}$O$_{7-δ}$ Thin Films with a Periodic Pinning~Lattice|Bernd Aichner,Lucas Backmeister,Max Karrer,Katja Wurster,Reinhold Kleiner,Edward Goldobin,Dieter Koelle,Wolfgang Lang###
(1795392, 1795398)
Angle-dependent Magnetoresistance of an Ordered Bose Glass of Vortices in YBa2Cu3O7- Thin Films with a Periodic PinningLattice.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5384615384615384,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23076923076923078,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15384615384615385,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 30, 'nm', 1]

YBa2Cu3O7
###Angle-dependent Magnetoresistance of an Ordered Bose Glass of Vortices in YBa$_{2}$Cu$_{3}$O$_{7-δ}$ Thin Films with a Periodic Pinning~Lattice|Bernd Aichner,Lucas Backmeister,Max Karrer,Katja Wurster,Reinhold Kleiner,Edward Goldobin,Dieter Koelle,Wolfgang Lang###
(1795430, 1795436)
 The competition between intrinsic disorder in superconductingYBa2Cu3O7-delta (YBCO) thin films and an ultradense triangularlattice of cylindrical pinning centers spaced at 30 nm intervals results in anordered Bose glass phase of vortices.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5384615384615384,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23076923076923078,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15384615384615385,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 30, 'nm', 0]

(YBCO)
###Angle-dependent Magnetoresistance of an Ordered Bose Glass of Vortices in YBa$_{2}$Cu$_{3}$O$_{7-δ}$ Thin Films with a Periodic Pinning~Lattice|Bernd Aichner,Lucas Backmeister,Max Karrer,Katja Wurster,Reinhold Kleiner,Edward Goldobin,Dieter Koelle,Wolfgang Lang###
(1795440, 1795445)
 The competition between intrinsic disorder in superconductingYBa2Cu3O7-delta (YBCO) thin films and an ultradense triangularlattice of cylindrical pinning centers spaced at 30 nm intervals results in anordered Bose glass phase of vortices.
Featurization successful!
0,0,0,0,0.25,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 30, 'nm', 0]

YBCO
###Angle-dependent Magnetoresistance of an Ordered Bose Glass of Vortices in YBa$_{2}$Cu$_{3}$O$_{7-δ}$ Thin Films with a Periodic Pinning~Lattice|Bernd Aichner,Lucas Backmeister,Max Karrer,Katja Wurster,Reinhold Kleiner,Edward Goldobin,Dieter Koelle,Wolfgang Lang###
(1795536, 1795539)
 The samples were created by scanning thefocused beam of a helium-ion microscope over the surface of the YBCO thin filmto form columns of point defects where superconductivity was locallysuppressed.
Featurization terminated normally.
0,0,0,0,0.25,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 30, 'nm', 1]

B
###Angle-dependent Magnetoresistance of an Ordered Bose Glass of Vortices in YBa$_{2}$Cu$_{3}$O$_{7-δ}$ Thin Films with a Periodic Pinning~Lattice|Bernd Aichner,Lucas Backmeister,Max Karrer,Katja Wurster,Reinhold Kleiner,Edward Goldobin,Dieter Koelle,Wolfgang Lang###
(1795642, 1795642)
 applied magnetic field (Ba)at the magnetic commensurability field, along with a sharp rise in thelifetimes of glassy fluctuations.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 30, 'nm', 4]

LuH2
###Pressure induced color change and evolution of metallic behavior in nitrogen-doped lutetium hydride|Ying-Jie Zhang,Xue Ming,Qing Li,Xiyu Zhu,Bo Zheng,Yuecong Liu,Chengping He,Huan Yang,Hai-Hu Wen###
(1795881, 1795883)
 By applying pressures up to 42 GPa on the nitrogen-doped lutetium hydride(LuH2pmtextxNy), we have found a gradual change of color fromdark-blue to pink-violet in the pressure region of about 12 GPa to 21 GPa.
Featurization terminated normally.
0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 42, 'GPa', 0],[49.0, 12, 'GPa', 0],[52.0, 21, 'GPa', 0],[73.0, 50.5, 'GPa', 1],[191.0, 2, ',', 3],[260.0, 9, 'tesla', 5],[275.0, 50.5, 'GPa', 5]

Sr
###Experimental verification of band convergence in Sr and Na codoped PbTe|Yuya Hattori,Shunsuke Yoshizawa,Keisuke Sagisaka,Yuki Tokumoto,Keiichi Edagawa,Takako Konoike,Shinya Uji,Taichi Terashima###
(1796744, 1796744)
Experimental verification of band convergence in Sr and Na codoped PbTe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[207.0, 200, 'meV', 3],[210.0, 300, 'meV', 3],[423.0, 50, 'percent', 7]

Na
###Experimental verification of band convergence in Sr and Na codoped PbTe|Yuya Hattori,Shunsuke Yoshizawa,Keisuke Sagisaka,Yuki Tokumoto,Keiichi Edagawa,Takako Konoike,Shinya Uji,Taichi Terashima###
(1796748, 1796748)
Experimental verification of band convergence in Sr and Na codoped PbTe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[203.0, 200, 'meV', 3],[206.0, 300, 'meV', 3],[419.0, 50, 'percent', 7]

PbTe
###Experimental verification of band convergence in Sr and Na codoped PbTe|Yuya Hattori,Shunsuke Yoshizawa,Keisuke Sagisaka,Yuki Tokumoto,Keiichi Edagawa,Takako Konoike,Shinya Uji,Taichi Terashima###
(1796752, 1796753)
Experimental verification of band convergence in Sr and Na codoped PbTe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[198.0, 200, 'meV', 3],[201.0, 300, 'meV', 3],[414.0, 50, 'percent', 7]

Sr
###Experimental verification of band convergence in Sr and Na codoped PbTe|Yuya Hattori,Shunsuke Yoshizawa,Keisuke Sagisaka,Yuki Tokumoto,Keiichi Edagawa,Takako Konoike,Shinya Uji,Taichi Terashima###
(1796798, 1796798)
 Scanning tunneling microscopy and transport measurements have been performedto investigate the electronic structure and its temperature dependence inheavily Sr and Na codoped PbTe, which is recognized as one of the mostpromising thermoelectric materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 200, 'meV', 2],[156.0, 300, 'meV', 2],[369.0, 50, 'percent', 6]

Na
###Experimental verification of band convergence in Sr and Na codoped PbTe|Yuya Hattori,Shunsuke Yoshizawa,Keisuke Sagisaka,Yuki Tokumoto,Keiichi Edagawa,Takako Konoike,Shinya Uji,Taichi Terashima###
(1796802, 1796802)
 Scanning tunneling microscopy and transport measurements have been performedto investigate the electronic structure and its temperature dependence inheavily Sr and Na codoped PbTe, which is recognized as one of the mostpromising thermoelectric materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 200, 'meV', 2],[152.0, 300, 'meV', 2],[365.0, 50, 'percent', 6]

PbTe
###Experimental verification of band convergence in Sr and Na codoped PbTe|Yuya Hattori,Shunsuke Yoshizawa,Keisuke Sagisaka,Yuki Tokumoto,Keiichi Edagawa,Takako Konoike,Shinya Uji,Taichi Terashima###
(1796806, 1796807)
 Scanning tunneling microscopy and transport measurements have been performedto investigate the electronic structure and its temperature dependence inheavily Sr and Na codoped PbTe, which is recognized as one of the mostpromising thermoelectric materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 200, 'meV', 2],[147.0, 300, 'meV', 2],[360.0, 50, 'percent', 6]

K
###Experimental verification of band convergence in Sr and Na codoped PbTe|Yuya Hattori,Shunsuke Yoshizawa,Keisuke Sagisaka,Yuki Tokumoto,Keiichi Edagawa,Takako Konoike,Shinya Uji,Taichi Terashima###
(1796856, 1796856)
 Our main findings are as follows (i) BelowT<missing VAR>4.5 K, all carriers are distributed in the first valence band at the L<missing VAR> point(L<missing VAR> band), which forms tube-shaped Fermi surfaces with concave curvature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 200, 'meV', 1],[98.0, 300, 'meV', 1],[311.0, 50, 'percent', 5]

Sr
###Experimental verification of band convergence in Sr and Na codoped PbTe|Yuya Hattori,Shunsuke Yoshizawa,Keisuke Sagisaka,Yuki Tokumoto,Keiichi Edagawa,Takako Konoike,Shinya Uji,Taichi Terashima###
(1796915, 1796915)
 WithSr and Na doping, the dispersion of the L<missing VAR> band changes, and the band gapincreases from 200 meV to 300 meV.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 200, 'meV', 0],[39.0, 300, 'meV', 0],[252.0, 50, 'percent', 4]

Na
###Experimental verification of band convergence in Sr and Na codoped PbTe|Yuya Hattori,Shunsuke Yoshizawa,Keisuke Sagisaka,Yuki Tokumoto,Keiichi Edagawa,Takako Konoike,Shinya Uji,Taichi Terashima###
(1796919, 1796919)
 WithSr and Na doping, the dispersion of the L<missing VAR> band changes, and the band gapincreases from 200 meV to 300 meV.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 200, 'meV', 0],[35.0, 300, 'meV', 0],[248.0, 50, 'percent', 4]

At
###Experimental verification of band convergence in Sr and Na codoped PbTe|Yuya Hattori,Shunsuke Yoshizawa,Keisuke Sagisaka,Yuki Tokumoto,Keiichi Edagawa,Takako Konoike,Shinya Uji,Taichi Terashima###
(1796961, 1796961)
 (ii) At T<missing VAR>4.5 K, the Fermi energy is located100 meV below the edge of the L<missing VAR> band for the Sr/Na codoped PbTe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[10.0, 200, 'meV', 1],[7.0, 300, 'meV', 1],[206.0, 50, 'percent', 3]

K
###Experimental verification of band convergence in Sr and Na codoped PbTe|Yuya Hattori,Shunsuke Yoshizawa,Keisuke Sagisaka,Yuki Tokumoto,Keiichi Edagawa,Takako Konoike,Shinya Uji,Taichi Terashima###
(1796966, 1796966)
 (ii) At T<missing VAR>4.5 K, the Fermi energy is located100 meV below the edge of the L<missing VAR> band for the Sr/Na codoped PbTe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 200, 'meV', 1],[12.0, 300, 'meV', 1],[201.0, 50, 'percent', 3]

V
###Experimental verification of band convergence in Sr and Na codoped PbTe|Yuya Hattori,Shunsuke Yoshizawa,Keisuke Sagisaka,Yuki Tokumoto,Keiichi Edagawa,Takako Konoike,Shinya Uji,Taichi Terashima###
(1796983, 1796983)
 (ii) At T<missing VAR>4.5 K, the Fermi energy is located100 meV below the edge of the L<missing VAR> band for the Sr/Na codoped PbTe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 200, 'meV', 1],[29.0, 300, 'meV', 1],[184.0, 50, 'percent', 3]

Sr/Na
###Experimental verification of band convergence in Sr and Na codoped PbTe|Yuya Hattori,Shunsuke Yoshizawa,Keisuke Sagisaka,Yuki Tokumoto,Keiichi Edagawa,Takako Konoike,Shinya Uji,Taichi Terashima###
(1797003, 1797005)
 (ii) At T<missing VAR>4.5 K, the Fermi energy is located100 meV below the edge of the L<missing VAR> band for the Sr/Na codoped PbTe.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[52.0, 200, 'meV', 1],[49.0, 300, 'meV', 1],[162.0, 50, 'percent', 3]

PbTe
###Experimental verification of band convergence in Sr and Na codoped PbTe|Yuya Hattori,Shunsuke Yoshizawa,Keisuke Sagisaka,Yuki Tokumoto,Keiichi Edagawa,Takako Konoike,Shinya Uji,Taichi Terashima###
(1797009, 1797010)
 (ii) At T<missing VAR>4.5 K, the Fermi energy is located100 meV below the edge of the L<missing VAR> band for the Sr/Na codoped PbTe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 200, 'meV', 1],[55.0, 300, 'meV', 1],[157.0, 50, 'percent', 3]

V
###Experimental verification of band convergence in Sr and Na codoped PbTe|Yuya Hattori,Shunsuke Yoshizawa,Keisuke Sagisaka,Yuki Tokumoto,Keiichi Edagawa,Takako Konoike,Shinya Uji,Taichi Terashima###
(1797054, 1797054)
 The secondvalence band at the Sigma point (Sigma band) is lower than the L<missing VAR> band by 150meV, which is significantly smaller than that of pristine PbTe (200 meV).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 200, 'meV', 2],[100.0, 300, 'meV', 2],[113.0, 50, 'percent', 2]

PbTe
###Experimental verification of band convergence in Sr and Na codoped PbTe|Yuya Hattori,Shunsuke Yoshizawa,Keisuke Sagisaka,Yuki Tokumoto,Keiichi Edagawa,Takako Konoike,Shinya Uji,Taichi Terashima###
(1797073, 1797074)
 The secondvalence band at the Sigma point (Sigma band) is lower than the L<missing VAR> band by 150meV, which is significantly smaller than that of pristine PbTe (200 meV).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 200, 'meV', 2],[119.0, 300, 'meV', 2],[93.0, 50, 'percent', 2]

V
###Experimental verification of band convergence in Sr and Na codoped PbTe|Yuya Hattori,Shunsuke Yoshizawa,Keisuke Sagisaka,Yuki Tokumoto,Keiichi Edagawa,Takako Konoike,Shinya Uji,Taichi Terashima###
(1797080, 1797080)
 The secondvalence band at the Sigma point (Sigma band) is lower than the L<missing VAR> band by 150meV, which is significantly smaller than that of pristine PbTe (200 meV).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 200, 'meV', 2],[126.0, 300, 'meV', 2],[87.0, 50, 'percent', 2]

K
###Experimental verification of band convergence in Sr and Na codoped PbTe|Yuya Hattori,Shunsuke Yoshizawa,Keisuke Sagisaka,Yuki Tokumoto,Keiichi Edagawa,Takako Konoike,Shinya Uji,Taichi Terashima###
(1797155, 1797155)
(iii) With increasing temperature, thecarrier distribution to the Sigma band starts at T<missing VAR>100 K and we estimate thatabout 50 percent of the total carriers are redistributed in the Sigma band atT<missing VAR>300 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[204.0, 200, 'meV', 4],[201.0, 300, 'meV', 4],[12.0, 50, 'percent', 0]

K
###Experimental verification of band convergence in Sr and Na codoped PbTe|Yuya Hattori,Shunsuke Yoshizawa,Keisuke Sagisaka,Yuki Tokumoto,Keiichi Edagawa,Takako Konoike,Shinya Uji,Taichi Terashima###
(1797195, 1797195)
(iii) With increasing temperature, thecarrier distribution to the Sigma band starts at T<missing VAR>100 K and we estimate thatabout 50 percent of the total carriers are redistributed in the Sigma band atT<missing VAR>300 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[244.0, 200, 'meV', 4],[241.0, 300, 'meV', 4],[28.0, 50, 'percent', 0]

Mn
###Emergence of flat bands via orbital-selective electron correlations in Mn-based kagome metal|Subhasis Samanta,Hwiwoo Park,Chanhyeon Lee,Sungmin Jeon,Hengbo Cui,Jungseek Hwang,Kwang-Yong Choi,Heung-Sik Kim###
(1797320, 1797320)
Emergence of flat bands via orbital-selective electron correlations in Mn-based kagome metal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sc3Mn3Al7Si5
###Emergence of flat bands via orbital-selective electron correlations in Mn-based kagome metal|Subhasis Samanta,Hwiwoo Park,Chanhyeon Lee,Sungmin Jeon,Hengbo Cui,Jungseek Hwang,Kwang-Yong Choi,Heung-Sik Kim###
(1797443, 1797450)
 Here, bycombining theoretical and experimental tools, we presentSc3Mn3Al7Si5 as a novel realization of correlation-inducedalmost-flat bands in the kagome lattice in the vicinity of the Fermi level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.3888888888888889,0.2777777777777778,0,0,0,0,0,0,0.16666666666666666,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Al
###Emergence of flat bands via orbital-selective electron correlations in Mn-based kagome metal|Subhasis Samanta,Hwiwoo Park,Chanhyeon Lee,Sungmin Jeon,Hengbo Cui,Jungseek Hwang,Kwang-Yong Choi,Heung-Sik Kim###
(1797505, 1797505)
 Ourmagnetic susceptibility, 27Al nuclear magnetic resonance, transport, andoptical conductivity measurements provide signatures of a correlated metallicphase with tantalizing ferromagnetic instability.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Emergence of flat bands via orbital-selective electron correlations in Mn-based kagome metal|Subhasis Samanta,Hwiwoo Park,Chanhyeon Lee,Sungmin Jeon,Hengbo Cui,Jungseek Hwang,Kwang-Yong Choi,Heung-Sik Kim###
(1797634, 1797634)
 In addition, a significantnegative magnetoresistance signal is observed, which can be attributed to thesuppression of flat-band-induced ferromagnetic fluctuation, which furthersupports the formation of flat bands in this compound.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Evidence of magnetoelectronic electromagnon mediated transport in flexoelectronic heterostructures|Anand Katailiha,Paul C. Lou,Ravindra G. Bhardwaj,Ward P. Beyermann,Sandeep Kumar###
(1797926, 1797926)
 Here, we reportexperimental evidence of magnetoelectronic electromagnon in the freestandingdegenerately doped p<missing VAR>-Si based heterostructure thin film samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La2O3Fe2Se2
###Pressure-induced transition from a Mott insulator to a ferromagnetic Weyl metal in La2O3Fe2Se2|Ye Yang,Fanghang Yu,Xikai Wen,Zhigang Gui,Yuqing Zhang,Fangyang Zhan,Rui Wang,Jianjun Ying,Xianhui Chen###
(1798301, 1798308)
Pressure-induced transition from a Mott insulator to a ferromagnetic Weyl metal in La2O3Fe2Se2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2222222222222222,0,0,0,0,0,0,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La2O3Fe2Se2
###Pressure-induced transition from a Mott insulator to a ferromagnetic Weyl metal in La2O3Fe2Se2|Ye Yang,Fanghang Yu,Xikai Wen,Zhigang Gui,Yuqing Zhang,Fangyang Zhan,Rui Wang,Jianjun Ying,Xianhui Chen###
(1798463, 1798470)
 Here, based on high-pressure electrical transport and XRDmeasurements, and first-principles calculations, we find that a uniquepressure-induced Mott transition from an antiferromagnetic Mott insulator to aferromagnetic Weyl metal in the iron oxychalcogenide La2O3Fe2Se2 occurs around37 G<missing VAR>Pa without structural phase transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2222222222222222,0,0,0,0,0,0,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pa
###Pressure-induced transition from a Mott insulator to a ferromagnetic Weyl metal in La2O3Fe2Se2|Ye Yang,Fanghang Yu,Xikai Wen,Zhigang Gui,Yuqing Zhang,Fangyang Zhan,Rui Wang,Jianjun Ying,Xianhui Chen###
(1798480, 1798480)
 Here, based on high-pressure electrical transport and XRDmeasurements, and first-principles calculations, we find that a uniquepressure-induced Mott transition from an antiferromagnetic Mott insulator to aferromagnetic Weyl metal in the iron oxychalcogenide La2O3Fe2Se2 occurs around37 G<missing VAR>Pa without structural phase transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La2O3Fe2Se2
###Pressure-induced transition from a Mott insulator to a ferromagnetic Weyl metal in La2O3Fe2Se2|Ye Yang,Fanghang Yu,Xikai Wen,Zhigang Gui,Yuqing Zhang,Fangyang Zhan,Rui Wang,Jianjun Ying,Xianhui Chen###
(1798649, 1798656)
 The emergence of Weyl fermions inLa2O3Fe2Se2 at high pressure may bridge the gap between nontrivial bandtopology and Mott insulating states.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2222222222222222,0,0,0,0,0,0,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

EuZn2As2
###Quantum-limit phenomena and bandstructure in the magnetic topological semimetal EuZn2As2|Joanna Blawat,Smita Speer,John Singleton,Weiwei Xie,Rongying Jin###
(1798785, 1798789)
Quantum-limit phenomena and bandstructure in the magnetic topological semimetal EuZn2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[60.0, 60, 'T', 1],[69.0, 0.6, 'K', 1],[94.0, 20, 'T', 1],[215.0, 6, 'T', 3]

K
###Quantum-limit phenomena and bandstructure in the magnetic topological semimetal EuZn2As2|Joanna Blawat,Smita Speer,John Singleton,Weiwei Xie,Rongying Jin###
(1798809, 1798809)
 We have experimentally investigated the low-temperature (0.6 K) electronicand magnetic properties of the layered antiferromagnet EuZn2As2 in pulsedmagnetic fields of up to 60 T at a temperature of 0.6 K, giant positivemagnetoresistance (MR) is observed above mu0H  20 T, a regime in which thespins are already fully polarized.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 60, 'T', 0],[49.0, 0.6, 'K', 0],[74.0, 20, 'T', 0],[195.0, 6, 'T', 2]

EuZn2As2
###Quantum-limit phenomena and bandstructure in the magnetic topological semimetal EuZn2As2|Joanna Blawat,Smita Speer,John Singleton,Weiwei Xie,Rongying Jin###
(1798829, 1798833)
 We have experimentally investigated the low-temperature (0.6 K) electronicand magnetic properties of the layered antiferromagnet EuZn2As2 in pulsedmagnetic fields of up to 60 T at a temperature of 0.6 K, giant positivemagnetoresistance (MR) is observed above mu0H  20 T, a regime in which thespins are already fully polarized.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 60, 'T', 0],[25.0, 0.6, 'K', 0],[50.0, 20, 'T', 0],[171.0, 6, 'T', 2]

H
###Quantum-limit phenomena and bandstructure in the magnetic topological semimetal EuZn2As2|Joanna Blawat,Smita Speer,John Singleton,Weiwei Xie,Rongying Jin###
(1798881, 1798881)
 We have experimentally investigated the low-temperature (0.6 K) electronicand magnetic properties of the layered antiferromagnet EuZn2As2 in pulsedmagnetic fields of up to 60 T at a temperature of 0.6 K, giant positivemagnetoresistance (MR) is observed above mu0H  20 T, a regime in which thespins are already fully polarized.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 60, 'T', 0],[23.0, 0.6, 'K', 0],[2.0, 20, 'T', 0],[123.0, 6, 'T', 2]

P
###Quantum-limit phenomena and bandstructure in the magnetic topological semimetal EuZn2As2|Joanna Blawat,Smita Speer,John Singleton,Weiwei Xie,Rongying Jin###
(1798924, 1798924)
 Both magnetic torque and proximity detectoroscillator (PD<missing VAR>O) data show no corresponding anomaly at or close to this field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 60, 'T', 1],[66.0, 0.6, 'K', 1],[41.0, 20, 'T', 1],[80.0, 6, 'T', 1]

O
###Quantum-limit phenomena and bandstructure in the magnetic topological semimetal EuZn2As2|Joanna Blawat,Smita Speer,John Singleton,Weiwei Xie,Rongying Jin###
(1798926, 1798926)
 Both magnetic torque and proximity detectoroscillator (PD<missing VAR>O) data show no corresponding anomaly at or close to this field.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 60, 'T', 1],[68.0, 0.6, 'K', 1],[43.0, 20, 'T', 1],[78.0, 6, 'T', 1]

P
###Quantum-limit phenomena and bandstructure in the magnetic topological semimetal EuZn2As2|Joanna Blawat,Smita Speer,John Singleton,Weiwei Xie,Rongying Jin###
(1798974, 1798974)
By analyzing the quantum oscillations observed in the MR and PD<missing VAR>O frequency, wefind that (1) the oscillation frequency F  46 pm 6 T for H // c<missing VAR> and 42 pm 2T<missing VAR> for H // ab; (2) the corresponding Berry phase is close to pi for H // c<missing VAR>,implying a nontrivial topology; and (3) the large linear MR at high fieldscorresponds to the quantum limit (i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 60, 'T', 2],[116.0, 0.6, 'K', 2],[91.0, 20, 'T', 2],[30.0, 6, 'T', 0]

O
###Quantum-limit phenomena and bandstructure in the magnetic topological semimetal EuZn2As2|Joanna Blawat,Smita Speer,John Singleton,Weiwei Xie,Rongying Jin###
(1798976, 1798976)
By analyzing the quantum oscillations observed in the MR and PD<missing VAR>O frequency, wefind that (1) the oscillation frequency F  46 pm 6 T for H // c<missing VAR> and 42 pm 2T<missing VAR> for H // ab; (2) the corresponding Berry phase is close to pi for H // c<missing VAR>,implying a nontrivial topology; and (3) the large linear MR at high fieldscorresponds to the quantum limit (i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 60, 'T', 2],[118.0, 0.6, 'K', 2],[93.0, 20, 'T', 2],[28.0, 6, 'T', 0]

F
###Quantum-limit phenomena and bandstructure in the magnetic topological semimetal EuZn2As2|Joanna Blawat,Smita Speer,John Singleton,Weiwei Xie,Rongying Jin###
(1798998, 1798998)
By analyzing the quantum oscillations observed in the MR and PD<missing VAR>O frequency, wefind that (1) the oscillation frequency F  46 pm 6 T for H // c<missing VAR> and 42 pm 2T<missing VAR> for H // ab; (2) the corresponding Berry phase is close to pi for H // c<missing VAR>,implying a nontrivial topology; and (3) the large linear MR at high fieldscorresponds to the quantum limit (i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 60, 'T', 2],[140.0, 0.6, 'K', 2],[115.0, 20, 'T', 2],[6.0, 6, 'T', 0]

H
###Quantum-limit phenomena and bandstructure in the magnetic topological semimetal EuZn2As2|Joanna Blawat,Smita Speer,John Singleton,Weiwei Xie,Rongying Jin###
(1799008, 1799008)
By analyzing the quantum oscillations observed in the MR and PD<missing VAR>O frequency, wefind that (1) the oscillation frequency F  46 pm 6 T for H // c<missing VAR> and 42 pm 2T<missing VAR> for H // ab; (2) the corresponding Berry phase is close to pi for H // c<missing VAR>,implying a nontrivial topology; and (3) the large linear MR at high fieldscorresponds to the quantum limit (i.e.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[159.0, 60, 'T', 2],[150.0, 0.6, 'K', 2],[125.0, 20, 'T', 2],[4.0, 6, 'T', 0]

H
###Quantum-limit phenomena and bandstructure in the magnetic topological semimetal EuZn2As2|Joanna Blawat,Smita Speer,John Singleton,Weiwei Xie,Rongying Jin###
(1799028, 1799028)
By analyzing the quantum oscillations observed in the MR and PD<missing VAR>O frequency, wefind that (1) the oscillation frequency F  46 pm 6 T for H // c<missing VAR> and 42 pm 2T<missing VAR> for H // ab; (2) the corresponding Berry phase is close to pi for H // c<missing VAR>,implying a nontrivial topology; and (3) the large linear MR at high fieldscorresponds to the quantum limit (i.e.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 60, 'T', 2],[170.0, 0.6, 'K', 2],[145.0, 20, 'T', 2],[24.0, 6, 'T', 0]

H
###Quantum-limit phenomena and bandstructure in the magnetic topological semimetal EuZn2As2|Joanna Blawat,Smita Speer,John Singleton,Weiwei Xie,Rongying Jin###
(1799058, 1799058)
By analyzing the quantum oscillations observed in the MR and PD<missing VAR>O frequency, wefind that (1) the oscillation frequency F  46 pm 6 T for H // c<missing VAR> and 42 pm 2T<missing VAR> for H // ab; (2) the corresponding Berry phase is close to pi for H // c<missing VAR>,implying a nontrivial topology; and (3) the large linear MR at high fieldscorresponds to the quantum limit (i.e.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[209.0, 60, 'T', 2],[200.0, 0.6, 'K', 2],[175.0, 20, 'T', 2],[54.0, 6, 'T', 0]

EuZn2As2
###Quantum-limit phenomena and bandstructure in the magnetic topological semimetal EuZn2As2|Joanna Blawat,Smita Speer,John Singleton,Weiwei Xie,Rongying Jin###
(1799205, 1799209)
 Ourfindings help understand the intimate relationship between magnetism andelectronic topology in EuZn2As2 under extremely high fields and suggest reasonsfor the emergent behavior in the quantum limit.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[356.0, 60, 'T', 5],[347.0, 0.6, 'K', 5],[322.0, 20, 'T', 5],[201.0, 6, 'T', 3]

BN
###Voltage-tunable giant nonvolatile multiple-state resistance in interlayer-sliding ferroelectric h-BN engineered van der Waals multiferroic tunnel junction|Xinlong Dong,Xuemin Shen,Xiaowen Sun,Yuhao Bai,Zhi Yan,Xiaohong Xu###
(1799275, 1799276)
Voltage-tunable giant nonvolatile multiple-state resistance in interlayer-sliding ferroelectric h<missing VAR>-BN engineered van der Waals multiferroic tunnel junction.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 2, 'D', 2],[357.0, 4, '%', 5],[366.0, 3, '%', 5]

Fe3GeTe2
###Voltage-tunable giant nonvolatile multiple-state resistance in interlayer-sliding ferroelectric h-BN engineered van der Waals multiferroic tunnel junction|Xinlong Dong,Xuemin Shen,Xiaowen Sun,Yuhao Bai,Zhi Yan,Xiaohong Xu###
(1799435, 1799439)
 Here, we theoreticallyinvestigate the spin-dependent electronic transport properties ofFe3GeTe2/graphene/bilayer-h<missing VAR>-BN/graphene/CrI3 (FGT/Gr-BBN-Gr/CrI)all-vdW MFTJs by employing the nonequilibrium Greens<missing VAR> function combined withdensity functional theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 2, 'D', 1],[194.0, 4, '%', 2],[203.0, 3, '%', 2]

BN
###Voltage-tunable giant nonvolatile multiple-state resistance in interlayer-sliding ferroelectric h-BN engineered van der Waals multiferroic tunnel junction|Xinlong Dong,Xuemin Shen,Xiaowen Sun,Yuhao Bai,Zhi Yan,Xiaohong Xu###
(1799447, 1799448)
 Here, we theoreticallyinvestigate the spin-dependent electronic transport properties ofFe3GeTe2/graphene/bilayer-h<missing VAR>-BN/graphene/CrI3 (FGT/Gr-BBN-Gr/CrI)all-vdW MFTJs by employing the nonequilibrium Greens<missing VAR> function combined withdensity functional theory.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 2, 'D', 1],[185.0, 4, '%', 2],[194.0, 3, '%', 2]

CrI3
###Voltage-tunable giant nonvolatile multiple-state resistance in interlayer-sliding ferroelectric h-BN engineered van der Waals multiferroic tunnel junction|Xinlong Dong,Xuemin Shen,Xiaowen Sun,Yuhao Bai,Zhi Yan,Xiaohong Xu###
(1799452, 1799454)
 Here, we theoreticallyinvestigate the spin-dependent electronic transport properties ofFe3GeTe2/graphene/bilayer-h<missing VAR>-BN/graphene/CrI3 (FGT/Gr-BBN-Gr/CrI)all-vdW MFTJs by employing the nonequilibrium Greens<missing VAR> function combined withdensity functional theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 2, 'D', 1],[179.0, 4, '%', 2],[188.0, 3, '%', 2]

F
###Voltage-tunable giant nonvolatile multiple-state resistance in interlayer-sliding ferroelectric h-BN engineered van der Waals multiferroic tunnel junction|Xinlong Dong,Xuemin Shen,Xiaowen Sun,Yuhao Bai,Zhi Yan,Xiaohong Xu###
(1799457, 1799457)
 Here, we theoreticallyinvestigate the spin-dependent electronic transport properties ofFe3GeTe2/graphene/bilayer-h<missing VAR>-BN/graphene/CrI3 (FGT/Gr-BBN-Gr/CrI)all-vdW MFTJs by employing the nonequilibrium Greens<missing VAR> function combined withdensity functional theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 2, 'D', 1],[176.0, 4, '%', 2],[185.0, 3, '%', 2]

BBN
###Voltage-tunable giant nonvolatile multiple-state resistance in interlayer-sliding ferroelectric h-BN engineered van der Waals multiferroic tunnel junction|Xinlong Dong,Xuemin Shen,Xiaowen Sun,Yuhao Bai,Zhi Yan,Xiaohong Xu###
(1799463, 1799465)
 Here, we theoreticallyinvestigate the spin-dependent electronic transport properties ofFe3GeTe2/graphene/bilayer-h<missing VAR>-BN/graphene/CrI3 (FGT/Gr-BBN-Gr/CrI)all-vdW MFTJs by employing the nonequilibrium Greens<missing VAR> function combined withdensity functional theory.
Featurization terminated normally.
0,0,0,0,0.6666666666666666,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 2, 'D', 1],[168.0, 4, '%', 2],[177.0, 3, '%', 2]

I
###Voltage-tunable giant nonvolatile multiple-state resistance in interlayer-sliding ferroelectric h-BN engineered van der Waals multiferroic tunnel junction|Xinlong Dong,Xuemin Shen,Xiaowen Sun,Yuhao Bai,Zhi Yan,Xiaohong Xu###
(1799470, 1799470)
 Here, we theoreticallyinvestigate the spin-dependent electronic transport properties ofFe3GeTe2/graphene/bilayer-h<missing VAR>-BN/graphene/CrI3 (FGT/Gr-BBN-Gr/CrI)all-vdW MFTJs by employing the nonequilibrium Greens<missing VAR> function combined withdensity functional theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 2, 'D', 1],[163.0, 4, '%', 2],[172.0, 3, '%', 2]

W
###Voltage-tunable giant nonvolatile multiple-state resistance in interlayer-sliding ferroelectric h-BN engineered van der Waals multiferroic tunnel junction|Xinlong Dong,Xuemin Shen,Xiaowen Sun,Yuhao Bai,Zhi Yan,Xiaohong Xu###
(1799477, 1799477)
 Here, we theoreticallyinvestigate the spin-dependent electronic transport properties ofFe3GeTe2/graphene/bilayer-h<missing VAR>-BN/graphene/CrI3 (FGT/Gr-BBN-Gr/CrI)all-vdW MFTJs by employing the nonequilibrium Greens<missing VAR> function combined withdensity functional theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 2, 'D', 1],[156.0, 4, '%', 2],[165.0, 3, '%', 2]

F
###Voltage-tunable giant nonvolatile multiple-state resistance in interlayer-sliding ferroelectric h-BN engineered van der Waals multiferroic tunnel junction|Xinlong Dong,Xuemin Shen,Xiaowen Sun,Yuhao Bai,Zhi Yan,Xiaohong Xu###
(1799517, 1799517)
 We demonstrate that such FGT/Gr-BBN-Gr/CrI MFTJsexhibit four non-volatile resistance states associated with different stakingorders of sliding ferroelectric BBN and magnetization alignment offerromagnetic free layer CrI3, with a maximum tunnel magnetoresistance(electroresistance) ratio, i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 2, 'D', 2],[116.0, 4, '%', 1],[125.0, 3, '%', 1]

BBN
###Voltage-tunable giant nonvolatile multiple-state resistance in interlayer-sliding ferroelectric h-BN engineered van der Waals multiferroic tunnel junction|Xinlong Dong,Xuemin Shen,Xiaowen Sun,Yuhao Bai,Zhi Yan,Xiaohong Xu###
(1799523, 1799525)
 We demonstrate that such FGT/Gr-BBN-Gr/CrI MFTJsexhibit four non-volatile resistance states associated with different stakingorders of sliding ferroelectric BBN and magnetization alignment offerromagnetic free layer CrI3, with a maximum tunnel magnetoresistance(electroresistance) ratio, i.e.
Featurization terminated normally.
0,0,0,0,0.6666666666666666,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 2, 'D', 2],[108.0, 4, '%', 1],[117.0, 3, '%', 1]

CrI
###Voltage-tunable giant nonvolatile multiple-state resistance in interlayer-sliding ferroelectric h-BN engineered van der Waals multiferroic tunnel junction|Xinlong Dong,Xuemin Shen,Xiaowen Sun,Yuhao Bai,Zhi Yan,Xiaohong Xu###
(1799529, 1799530)
 We demonstrate that such FGT/Gr-BBN-Gr/CrI MFTJsexhibit four non-volatile resistance states associated with different stakingorders of sliding ferroelectric BBN and magnetization alignment offerromagnetic free layer CrI3, with a maximum tunnel magnetoresistance(electroresistance) ratio, i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 2, 'D', 2],[103.0, 4, '%', 1],[112.0, 3, '%', 1]

BBN
###Voltage-tunable giant nonvolatile multiple-state resistance in interlayer-sliding ferroelectric h-BN engineered van der Waals multiferroic tunnel junction|Xinlong Dong,Xuemin Shen,Xiaowen Sun,Yuhao Bai,Zhi Yan,Xiaohong Xu###
(1799567, 1799569)
 We demonstrate that such FGT/Gr-BBN-Gr/CrI MFTJsexhibit four non-volatile resistance states associated with different stakingorders of sliding ferroelectric BBN and magnetization alignment offerromagnetic free layer CrI3, with a maximum tunnel magnetoresistance(electroresistance) ratio, i.e.
Featurization terminated normally.
0,0,0,0,0.6666666666666666,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[185.0, 2, 'D', 2],[64.0, 4, '%', 1],[73.0, 3, '%', 1]

CrI3
###Voltage-tunable giant nonvolatile multiple-state resistance in interlayer-sliding ferroelectric h-BN engineered van der Waals multiferroic tunnel junction|Xinlong Dong,Xuemin Shen,Xiaowen Sun,Yuhao Bai,Zhi Yan,Xiaohong Xu###
(1799586, 1799588)
 We demonstrate that such FGT/Gr-BBN-Gr/CrI MFTJsexhibit four non-volatile resistance states associated with different stakingorders of sliding ferroelectric BBN and magnetization alignment offerromagnetic free layer CrI3, with a maximum tunnel magnetoresistance(electroresistance) ratio, i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[204.0, 2, 'D', 2],[45.0, 4, '%', 1],[54.0, 3, '%', 1]

BBN
###Voltage-tunable giant nonvolatile multiple-state resistance in interlayer-sliding ferroelectric h-BN engineered van der Waals multiferroic tunnel junction|Xinlong Dong,Xuemin Shen,Xiaowen Sun,Yuhao Bai,Zhi Yan,Xiaohong Xu###
(1799803, 1799805)
 This work shows that the gianttunneling resistance ratio, multiple resistance states, and excellentspin-polarized transport properties of sliding ferroelectric BBN-based MFTJsindicate its significant potential in nonvolatile memories.
Featurization terminated normally.
0,0,0,0,0.6666666666666666,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[421.0, 2, 'D', 6],[170.0, 4, '%', 3],[161.0, 3, '%', 3]

TaAs
###Non-divergent Chiral Charge Pumping in Weyl Semimetal|Min Ju Park,Suik Cheon,Hyun-Woo Lee###
(1799930, 1799931)
 Nonlinearresponses in transport are estimated to be substantial, because in realmaterials such as TaAs or Bi1-xSbx<missing VAR>, the Fermi level resides near theWeyl nodes where the chiral charge pumping is said to diverge.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Bi1-xSb
###Non-divergent Chiral Charge Pumping in Weyl Semimetal|Min Ju Park,Suik Cheon,Hyun-Woo Lee###
(1799935, 1799939)
 Nonlinearresponses in transport are estimated to be substantial, because in realmaterials such as TaAs or Bi1-xSbx<missing VAR>, the Fermi level resides near theWeyl nodes where the chiral charge pumping is said to diverge.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

WS
###Non-divergent Chiral Charge Pumping in Weyl Semimetal|Min Ju Park,Suik Cheon,Hyun-Woo Lee###
(1800129, 1800130)
Our result suggests the possibility that the nonlinear properties in WSMs canbe overestimated, and provides the validity condition for the conventionalapproximation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

VC
###Substantial reduction of write-error rate for voltage-controlled magnetoresistive random access memory by in-plane demagnetizing field and voltage-induced negative out-of-plane anisotropy field|Rie Matsumoto,Shiniji Yuasa,Hiroshi Imamura###
(1800295, 1800296)
 Voltage-controlled magnetoresistive random access memory (VC-MRAM) based onvoltage-induced dynamic switching in magnetic tunnel junctions (MTJs) is apromising ultimate non-volatile memory with ultralow power consumption.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Substantial reduction of write-error rate for voltage-controlled magnetoresistive random access memory by in-plane demagnetizing field and voltage-induced negative out-of-plane anisotropy field|Rie Matsumoto,Shiniji Yuasa,Hiroshi Imamura###
(1800395, 1800395)
However, the dynamic switching in a conventional MTJ is accompanied by arelatively high write error rate (WER), hindering the reliable operation ofVC-MRAM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

VC
###Substantial reduction of write-error rate for voltage-controlled magnetoresistive random access memory by in-plane demagnetizing field and voltage-induced negative out-of-plane anisotropy field|Rie Matsumoto,Shiniji Yuasa,Hiroshi Imamura###
(1800412, 1800413)
However, the dynamic switching in a conventional MTJ is accompanied by arelatively high write error rate (WER), hindering the reliable operation ofVC-MRAM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Substantial reduction of write-error rate for voltage-controlled magnetoresistive random access memory by in-plane demagnetizing field and voltage-induced negative out-of-plane anisotropy field|Rie Matsumoto,Shiniji Yuasa,Hiroshi Imamura###
(1800450, 1800450)
 Here, we propose a reliable writing scheme using the in-planedemagnetizing field (ID<missing VAR>F) and voltage-induced negative out-of-plane anisotropyfield (NOAF).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Substantial reduction of write-error rate for voltage-controlled magnetoresistive random access memory by in-plane demagnetizing field and voltage-induced negative out-of-plane anisotropy field|Rie Matsumoto,Shiniji Yuasa,Hiroshi Imamura###
(1800452, 1800452)
 Here, we propose a reliable writing scheme using the in-planedemagnetizing field (ID<missing VAR>F) and voltage-induced negative out-of-plane anisotropyfield (NOAF).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NO
###Substantial reduction of write-error rate for voltage-controlled magnetoresistive random access memory by in-plane demagnetizing field and voltage-induced negative out-of-plane anisotropy field|Rie Matsumoto,Shiniji Yuasa,Hiroshi Imamura###
(1800475, 1800476)
 Here, we propose a reliable writing scheme using the in-planedemagnetizing field (ID<missing VAR>F) and voltage-induced negative out-of-plane anisotropyfield (NOAF).
Featurization terminated normally.
0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Substantial reduction of write-error rate for voltage-controlled magnetoresistive random access memory by in-plane demagnetizing field and voltage-induced negative out-of-plane anisotropy field|Rie Matsumoto,Shiniji Yuasa,Hiroshi Imamura###
(1800478, 1800478)
 Here, we propose a reliable writing scheme using the in-planedemagnetizing field (ID<missing VAR>F) and voltage-induced negative out-of-plane anisotropyfield (NOAF).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NO
###Substantial reduction of write-error rate for voltage-controlled magnetoresistive random access memory by in-plane demagnetizing field and voltage-induced negative out-of-plane anisotropy field|Rie Matsumoto,Shiniji Yuasa,Hiroshi Imamura###
(1800505, 1800506)
 Numerical simulations based on macrospin model demonstrate thatthe voltage-induced NOAF modifies the switching dynamics and increases thetorque due to the ID<missing VAR>F, thereby reducing the switching time.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Substantial reduction of write-error rate for voltage-controlled magnetoresistive random access memory by in-plane demagnetizing field and voltage-induced negative out-of-plane anisotropy field|Rie Matsumoto,Shiniji Yuasa,Hiroshi Imamura###
(1800508, 1800508)
 Numerical simulations based on macrospin model demonstrate thatthe voltage-induced NOAF modifies the switching dynamics and increases thetorque due to the ID<missing VAR>F, thereby reducing the switching time.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Substantial reduction of write-error rate for voltage-controlled magnetoresistive random access memory by in-plane demagnetizing field and voltage-induced negative out-of-plane anisotropy field|Rie Matsumoto,Shiniji Yuasa,Hiroshi Imamura###
(1800533, 1800533)
 Numerical simulations based on macrospin model demonstrate thatthe voltage-induced NOAF modifies the switching dynamics and increases thetorque due to the ID<missing VAR>F, thereby reducing the switching time.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Substantial reduction of write-error rate for voltage-controlled magnetoresistive random access memory by in-plane demagnetizing field and voltage-induced negative out-of-plane anisotropy field|Rie Matsumoto,Shiniji Yuasa,Hiroshi Imamura###
(1800535, 1800535)
 Numerical simulations based on macrospin model demonstrate thatthe voltage-induced NOAF modifies the switching dynamics and increases thetorque due to the ID<missing VAR>F, thereby reducing the switching time.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Substantial reduction of write-error rate for voltage-controlled magnetoresistive random access memory by in-plane demagnetizing field and voltage-induced negative out-of-plane anisotropy field|Rie Matsumoto,Shiniji Yuasa,Hiroshi Imamura###
(1800551, 1800551)
 The ID<missing VAR>F andvoltage-induced NOAF also reduce the mean energy difference between themagnetization direction at the end of the pulse and the equilibrium direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Substantial reduction of write-error rate for voltage-controlled magnetoresistive random access memory by in-plane demagnetizing field and voltage-induced negative out-of-plane anisotropy field|Rie Matsumoto,Shiniji Yuasa,Hiroshi Imamura###
(1800553, 1800553)
 The ID<missing VAR>F andvoltage-induced NOAF also reduce the mean energy difference between themagnetization direction at the end of the pulse and the equilibrium direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NO
###Substantial reduction of write-error rate for voltage-controlled magnetoresistive random access memory by in-plane demagnetizing field and voltage-induced negative out-of-plane anisotropy field|Rie Matsumoto,Shiniji Yuasa,Hiroshi Imamura###
(1800562, 1800563)
 The ID<missing VAR>F andvoltage-induced NOAF also reduce the mean energy difference between themagnetization direction at the end of the pulse and the equilibrium direction.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Substantial reduction of write-error rate for voltage-controlled magnetoresistive random access memory by in-plane demagnetizing field and voltage-induced negative out-of-plane anisotropy field|Rie Matsumoto,Shiniji Yuasa,Hiroshi Imamura###
(1800565, 1800565)
 The ID<missing VAR>F andvoltage-induced NOAF also reduce the mean energy difference between themagnetization direction at the end of the pulse and the equilibrium direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Substantial reduction of write-error rate for voltage-controlled magnetoresistive random access memory by in-plane demagnetizing field and voltage-induced negative out-of-plane anisotropy field|Rie Matsumoto,Shiniji Yuasa,Hiroshi Imamura###
(1800610, 1800610)
As a result, an appropriate combination of the ID<missing VAR>F and voltage-induced NOAFreduces the WER by one order of magnitude compared with that of the dynamicswitching in a conventional MTJ.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Substantial reduction of write-error rate for voltage-controlled magnetoresistive random access memory by in-plane demagnetizing field and voltage-induced negative out-of-plane anisotropy field|Rie Matsumoto,Shiniji Yuasa,Hiroshi Imamura###
(1800627, 1800627)
As a result, an appropriate combination of the ID<missing VAR>F and voltage-induced NOAFreduces the WER by one order of magnitude compared with that of the dynamicswitching in a conventional MTJ.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Substantial reduction of write-error rate for voltage-controlled magnetoresistive random access memory by in-plane demagnetizing field and voltage-induced negative out-of-plane anisotropy field|Rie Matsumoto,Shiniji Yuasa,Hiroshi Imamura###
(1800629, 1800629)
As a result, an appropriate combination of the ID<missing VAR>F and voltage-induced NOAFreduces the WER by one order of magnitude compared with that of the dynamicswitching in a conventional MTJ.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NO
###Substantial reduction of write-error rate for voltage-controlled magnetoresistive random access memory by in-plane demagnetizing field and voltage-induced negative out-of-plane anisotropy field|Rie Matsumoto,Shiniji Yuasa,Hiroshi Imamura###
(1800637, 1800638)
As a result, an appropriate combination of the ID<missing VAR>F and voltage-induced NOAFreduces the WER by one order of magnitude compared with that of the dynamicswitching in a conventional MTJ.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Substantial reduction of write-error rate for voltage-controlled magnetoresistive random access memory by in-plane demagnetizing field and voltage-induced negative out-of-plane anisotropy field|Rie Matsumoto,Shiniji Yuasa,Hiroshi Imamura###
(1800640, 1800640)
As a result, an appropriate combination of the ID<missing VAR>F and voltage-induced NOAFreduces the WER by one order of magnitude compared with that of the dynamicswitching in a conventional MTJ.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

W
###Substantial reduction of write-error rate for voltage-controlled magnetoresistive random access memory by in-plane demagnetizing field and voltage-induced negative out-of-plane anisotropy field|Rie Matsumoto,Shiniji Yuasa,Hiroshi Imamura###
(1800647, 1800647)
As a result, an appropriate combination of the ID<missing VAR>F and voltage-induced NOAFreduces the WER by one order of magnitude compared with that of the dynamicswitching in a conventional MTJ.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Skyrmion-mediated Nonvolatile Ternary Memory|Md Mahadi Rajib,Namita Bindal,Ravish Kumar Raj,Brajesh Kumar Kaushik,Jayasimha Atulasimha###
(1800772, 1800772)
 In the past, it has beendemonstrated that voltage-controlled magnetic anisotropy (VCM<missing VAR>A) based writingis highly energy-efficient compared to other writing methods used innon-volatile nano-magnetic binary memory systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, -1, ',', 2],[174.0, 0, ',', 2],[227.0, 99, '%', 2],[325.0, 2, 'X', 3]

VC
###Skyrmion-mediated Nonvolatile Ternary Memory|Md Mahadi Rajib,Namita Bindal,Ravish Kumar Raj,Brajesh Kumar Kaushik,Jayasimha Atulasimha###
(1800799, 1800800)
 In the past, it has beendemonstrated that voltage-controlled magnetic anisotropy (VCM<missing VAR>A) based writingis highly energy-efficient compared to other writing methods used innon-volatile nano-magnetic binary memory systems.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, -1, ',', 2],[146.0, 0, ',', 2],[199.0, 99, '%', 2],[297.0, 2, 'X', 3]

In
###Skyrmion-mediated Nonvolatile Ternary Memory|Md Mahadi Rajib,Namita Bindal,Ravish Kumar Raj,Brajesh Kumar Kaushik,Jayasimha Atulasimha###
(1800848, 1800848)
 In this study, we introduce anew, VCM<missing VAR>A-based and skyrmion-mediated non-volatile ternary memory system usinga perpendicular magnetic tunnel junction (p-MTJ) in the presence of roomtemperature thermal perturbation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, -1, ',', 1],[98.0, 0, ',', 1],[151.0, 99, '%', 1],[249.0, 2, 'X', 2]

VC
###Skyrmion-mediated Nonvolatile Ternary Memory|Md Mahadi Rajib,Namita Bindal,Ravish Kumar Raj,Brajesh Kumar Kaushik,Jayasimha Atulasimha###
(1800865, 1800866)
 In this study, we introduce anew, VCM<missing VAR>A-based and skyrmion-mediated non-volatile ternary memory system usinga perpendicular magnetic tunnel junction (p-MTJ) in the presence of roomtemperature thermal perturbation.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, -1, ',', 1],[80.0, 0, ',', 1],[133.0, 99, '%', 1],[231.0, 2, 'X', 2]

S
###Skyrmion-mediated Nonvolatile Ternary Memory|Md Mahadi Rajib,Namita Bindal,Ravish Kumar Raj,Brajesh Kumar Kaushik,Jayasimha Atulasimha###
(1801127, 1801127)
 Additionally, we show that our proposed ternary memory demonstratesan improvement in area and energy by at least 2X and 60X<missing VAR> respectively,compared to state-of-the-art spin-transfer torque (STT)-based non-volatilemagnetic multistate memories.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, -1, ',', 1],[181.0, 0, ',', 1],[128.0, 99, '%', 1],[30.0, 2, 'X', 0]

Tb/Co
###Field-free all-optical switching and electrical read-out of Tb/Co-based magnetic tunnel junctions|D. Salomoni,Y. Peng,L. Farcis,S. Auffret,M. Hehn,G. Malinowski,S. Mangin,B. Dieny,L. D. Buda-Prejbeanu,R. C. Sousa,I. L. Prejbeanu###
(1801219, 1801221)
Field-free all-optical switching and electrical read-out of Tb/Co-based magnetic tunnel junctions.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[111.0, 50, 'fs', 2],[202.0, 74, '%', 3]

In
###Field-free all-optical switching and electrical read-out of Tb/Co-based magnetic tunnel junctions|D. Salomoni,Y. Peng,L. Farcis,S. Auffret,M. Hehn,G. Malinowski,S. Mangin,B. Dieny,L. D. Buda-Prejbeanu,R. C. Sousa,I. L. Prejbeanu###
(1801316, 1801316)
 In this work we demonstrate successfulfield-free 50fs single laser pulse driven magnetization reversal of [Tb/Co]based storage layer in a perpendicular magnetic tunnel junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 50, 'fs', 0],[107.0, 74, '%', 1]

Co
###Field-free all-optical switching and electrical read-out of Tb/Co-based magnetic tunnel junctions|D. Salomoni,Y. Peng,L. Farcis,S. Auffret,M. Hehn,G. Malinowski,S. Mangin,B. Dieny,L. D. Buda-Prejbeanu,R. C. Sousa,I. L. Prejbeanu###
(1801351, 1801351)
 In this work we demonstrate successfulfield-free 50fs single laser pulse driven magnetization reversal of [Tb/Co]based storage layer in a perpendicular magnetic tunnel junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 50, 'fs', 0],[72.0, 74, '%', 1]

S
###Nonlinear spin dynamics of ferromagnetic ring in the vortex state and its application for spin-transfer nano-oscillator|Vera Uzunova,Boris A. Ivanov###
(1802147, 1802147)
 The ring-basedST<missing VAR>NO is supposed to increase the areas of practical application of the ST<missing VAR>NOs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[193.0, -2, ',', 4]

NO
###Nonlinear spin dynamics of ferromagnetic ring in the vortex state and its application for spin-transfer nano-oscillator|Vera Uzunova,Boris A. Ivanov###
(1802149, 1802150)
 The ring-basedST<missing VAR>NO is supposed to increase the areas of practical application of the ST<missing VAR>NOs.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[195.0, -2, ',', 4]

S
###Nonlinear spin dynamics of ferromagnetic ring in the vortex state and its application for spin-transfer nano-oscillator|Vera Uzunova,Boris A. Ivanov###
(1802174, 1802174)
 The ring-basedST<missing VAR>NO is supposed to increase the areas of practical application of the ST<missing VAR>NOs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[220.0, -2, ',', 4]

NOs
###Nonlinear spin dynamics of ferromagnetic ring in the vortex state and its application for spin-transfer nano-oscillator|Vera Uzunova,Boris A. Ivanov###
(1802176, 1802177)
 The ring-basedST<missing VAR>NO is supposed to increase the areas of practical application of the ST<missing VAR>NOs.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[222.0, -2, ',', 4]

(Cd3As2)
###Constraints on proximity-induced ferromagnetism in a Dirac semimetal (Cd$_3$As$_2$)/ferromagnetic semiconductor (Ga$_{1-x}$Mn$_x$Sb) heterostructure|Arpita Mitra,Run Xiao,Wilson Yanez,Yongxi Ou,Juan Chamorro,Tyrel McQueen,Alexander J. Grutter,Julie A. Borchers,Michael R. Fitzsimmons,Timothy R. Charlton,Nitin Samarth###
(1802206, 1802211)
Constraints on proximity-induced ferromagnetism in a Dirac semimetal (Cd3As2)/ferromagnetic semiconductor (Ga1-xMnx<missing VAR>Sb) heterostructure.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[269.0, 2, 'K', 4],[272.0, 20, 'K', 4],[366.0, 6, 'K', 5],[397.0, 14, 'emu', 5]

Ga1-xMn
###Constraints on proximity-induced ferromagnetism in a Dirac semimetal (Cd$_3$As$_2$)/ferromagnetic semiconductor (Ga$_{1-x}$Mn$_x$Sb) heterostructure|Arpita Mitra,Run Xiao,Wilson Yanez,Yongxi Ou,Juan Chamorro,Tyrel McQueen,Alexander J. Grutter,Julie A. Borchers,Michael R. Fitzsimmons,Timothy R. Charlton,Nitin Samarth###
(1802218, 1802222)
Constraints on proximity-induced ferromagnetism in a Dirac semimetal (Cd3As2)/ferromagnetic semiconductor (Ga1-xMnx<missing VAR>Sb) heterostructure.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[258.0, 2, 'K', 4],[261.0, 20, 'K', 4],[355.0, 6, 'K', 5],[386.0, 14, 'emu', 5]

Sb
###Constraints on proximity-induced ferromagnetism in a Dirac semimetal (Cd$_3$As$_2$)/ferromagnetic semiconductor (Ga$_{1-x}$Mn$_x$Sb) heterostructure|Arpita Mitra,Run Xiao,Wilson Yanez,Yongxi Ou,Juan Chamorro,Tyrel McQueen,Alexander J. Grutter,Julie A. Borchers,Michael R. Fitzsimmons,Timothy R. Charlton,Nitin Samarth###
(1802224, 1802224)
Constraints on proximity-induced ferromagnetism in a Dirac semimetal (Cd3As2)/ferromagnetic semiconductor (Ga1-xMnx<missing VAR>Sb) heterostructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[256.0, 2, 'K', 4],[259.0, 20, 'K', 4],[353.0, 6, 'K', 5],[384.0, 14, 'emu', 5]

Cd3As2
###Constraints on proximity-induced ferromagnetism in a Dirac semimetal (Cd$_3$As$_2$)/ferromagnetic semiconductor (Ga$_{1-x}$Mn$_x$Sb) heterostructure|Arpita Mitra,Run Xiao,Wilson Yanez,Yongxi Ou,Juan Chamorro,Tyrel McQueen,Alexander J. Grutter,Julie A. Borchers,Michael R. Fitzsimmons,Timothy R. Charlton,Nitin Samarth###
(1802246, 1802249)
 Breaking time-reversal symmetry in a Dirac semimetal Cd3As2 throughdoping with magnetic ions or by the magnetic proximity effect is expected tocause a transition to other topological phases (such as a Weyl semimetal).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[231.0, 2, 'K', 3],[234.0, 20, 'K', 3],[328.0, 6, 'K', 4],[359.0, 14, 'emu', 4]

(Cd3As2)
###Constraints on proximity-induced ferromagnetism in a Dirac semimetal (Cd$_3$As$_2$)/ferromagnetic semiconductor (Ga$_{1-x}$Mn$_x$Sb) heterostructure|Arpita Mitra,Run Xiao,Wilson Yanez,Yongxi Ou,Juan Chamorro,Tyrel McQueen,Alexander J. Grutter,Julie A. Borchers,Michael R. Fitzsimmons,Timothy R. Charlton,Nitin Samarth###
(1802343, 1802348)
 Tothis end, we investigate the possibility of proximity-induced ferromagneticordering in epitaxial Dirac semimetal (Cd3As2)/ferromagneticsemiconductor (Ga1-xMnx<missing VAR>Sb) heterostructures grown by molecular beamepitaxy.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 2, 'K', 2],[135.0, 20, 'K', 2],[229.0, 6, 'K', 3],[260.0, 14, 'emu', 3]

Ga1-xMn
###Constraints on proximity-induced ferromagnetism in a Dirac semimetal (Cd$_3$As$_2$)/ferromagnetic semiconductor (Ga$_{1-x}$Mn$_x$Sb) heterostructure|Arpita Mitra,Run Xiao,Wilson Yanez,Yongxi Ou,Juan Chamorro,Tyrel McQueen,Alexander J. Grutter,Julie A. Borchers,Michael R. Fitzsimmons,Timothy R. Charlton,Nitin Samarth###
(1802356, 1802360)
 Tothis end, we investigate the possibility of proximity-induced ferromagneticordering in epitaxial Dirac semimetal (Cd3As2)/ferromagneticsemiconductor (Ga1-xMnx<missing VAR>Sb) heterostructures grown by molecular beamepitaxy.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[120.0, 2, 'K', 2],[123.0, 20, 'K', 2],[217.0, 6, 'K', 3],[248.0, 14, 'emu', 3]

Sb
###Constraints on proximity-induced ferromagnetism in a Dirac semimetal (Cd$_3$As$_2$)/ferromagnetic semiconductor (Ga$_{1-x}$Mn$_x$Sb) heterostructure|Arpita Mitra,Run Xiao,Wilson Yanez,Yongxi Ou,Juan Chamorro,Tyrel McQueen,Alexander J. Grutter,Julie A. Borchers,Michael R. Fitzsimmons,Timothy R. Charlton,Nitin Samarth###
(1802362, 1802362)
 Tothis end, we investigate the possibility of proximity-induced ferromagneticordering in epitaxial Dirac semimetal (Cd3As2)/ferromagneticsemiconductor (Ga1-xMnx<missing VAR>Sb) heterostructures grown by molecular beamepitaxy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 2, 'K', 2],[121.0, 20, 'K', 2],[215.0, 6, 'K', 3],[246.0, 14, 'emu', 3]

Cd3As2
###Constraints on proximity-induced ferromagnetism in a Dirac semimetal (Cd$_3$As$_2$)/ferromagnetic semiconductor (Ga$_{1-x}$Mn$_x$Sb) heterostructure|Arpita Mitra,Run Xiao,Wilson Yanez,Yongxi Ou,Juan Chamorro,Tyrel McQueen,Alexander J. Grutter,Julie A. Borchers,Michael R. Fitzsimmons,Timothy R. Charlton,Nitin Samarth###
(1802527, 1802530)
 Measurements of the magnetoresistance and Hall effect in thetemperature range 2 K - 20 K show signatures that could be consistent witheither a proximity effect or spin-dependent scattering of charge carriers inthe Cd3As2 channel.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 2, 'K', 0],[44.0, 20, 'K', 0],[47.0, 6, 'K', 1],[78.0, 14, 'emu', 1]

Cd3As2
###Constraints on proximity-induced ferromagnetism in a Dirac semimetal (Cd$_3$As$_2$)/ferromagnetic semiconductor (Ga$_{1-x}$Mn$_x$Sb) heterostructure|Arpita Mitra,Run Xiao,Wilson Yanez,Yongxi Ou,Juan Chamorro,Tyrel McQueen,Alexander J. Grutter,Julie A. Borchers,Michael R. Fitzsimmons,Timothy R. Charlton,Nitin Samarth###
(1802590, 1802593)
 Polarized neutron reflectometry sets constraints onthe interpretation of the magnetotransport studies by showing that (at leastfor temperatures above 6 K) any induced magnetization in the Cd3As2itself must be relatively small (< 14 emu/cm3).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 2, 'K', 1],[107.0, 20, 'K', 1],[13.0, 6, 'K', 0],[15.0, 14, 'emu', 0]

(NbSe2)
###Ferromagnetic Superconductivity in Two-dimensional Niobium Diselenide|Tingyu Qu,Shangjian Jin,Fuchen Hou,Deyi Fu,Junye Huang,Darryl Foo Chuan Wei,Xiao Chang,Kenji Watanabe,Takashi Taniguchi,Junhao Lin,Shaffique Adam,Barbaros Özyilmaz###
(1802785, 1802789)
 Here, we show thatatomically-thin niobium diselenide (NbSe2) intercalated with dilute cobaltatoms spontaneously displays ferromagnetism below the superconductingtransition temperature (Tc).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 1950, 's', 1]

Co
###Ferromagnetic Superconductivity in Two-dimensional Niobium Diselenide|Tingyu Qu,Shangjian Jin,Fuchen Hou,Deyi Fu,Junye Huang,Darryl Foo Chuan Wei,Xiao Chang,Kenji Watanabe,Takashi Taniguchi,Junhao Lin,Shaffique Adam,Barbaros Özyilmaz###
(1802872, 1802872)
 We elucidate the origin of this phase byconstructing a magnetic tunnel junction that consists of cobalt andcobalt-doped niobium diselenide (Co-NbSe2) as the two ferromagneticelectrodes, with an ultra-thin boron nitride as the tunnelling barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[138.0, 1950, 's', 2]

Se2
###Ferromagnetic Superconductivity in Two-dimensional Niobium Diselenide|Tingyu Qu,Shangjian Jin,Fuchen Hou,Deyi Fu,Junye Huang,Darryl Foo Chuan Wei,Xiao Chang,Kenji Watanabe,Takashi Taniguchi,Junhao Lin,Shaffique Adam,Barbaros Özyilmaz###
(1802875, 1802876)
 We elucidate the origin of this phase byconstructing a magnetic tunnel junction that consists of cobalt andcobalt-doped niobium diselenide (Co-NbSe2) as the two ferromagneticelectrodes, with an ultra-thin boron nitride as the tunnelling barrier.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 1950, 's', 2]

At
###Ferromagnetic Superconductivity in Two-dimensional Niobium Diselenide|Tingyu Qu,Shangjian Jin,Fuchen Hou,Deyi Fu,Junye Huang,Darryl Foo Chuan Wei,Xiao Chang,Kenji Watanabe,Takashi Taniguchi,Junhao Lin,Shaffique Adam,Barbaros Özyilmaz###
(1802912, 1802912)
 At atemperature well below Tc, the tunnelling magnetoresistance shows a bistablestate, suggesting a ferromagnetic order in Co-NbSe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 1950, 's', 3]

Co
###Ferromagnetic Superconductivity in Two-dimensional Niobium Diselenide|Tingyu Qu,Shangjian Jin,Fuchen Hou,Deyi Fu,Junye Huang,Darryl Foo Chuan Wei,Xiao Chang,Kenji Watanabe,Takashi Taniguchi,Junhao Lin,Shaffique Adam,Barbaros Özyilmaz###
(1802953, 1802953)
 At atemperature well below Tc, the tunnelling magnetoresistance shows a bistablestate, suggesting a ferromagnetic order in Co-NbSe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[219.0, 1950, 's', 3]

NbSe2
###Ferromagnetic Superconductivity in Two-dimensional Niobium Diselenide|Tingyu Qu,Shangjian Jin,Fuchen Hou,Deyi Fu,Junye Huang,Darryl Foo Chuan Wei,Xiao Chang,Kenji Watanabe,Takashi Taniguchi,Junhao Lin,Shaffique Adam,Barbaros Özyilmaz###
(1802955, 1802957)
 At atemperature well below Tc, the tunnelling magnetoresistance shows a bistablestate, suggesting a ferromagnetic order in Co-NbSe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[221.0, 1950, 's', 3]

KKY
###Ferromagnetic Superconductivity in Two-dimensional Niobium Diselenide|Tingyu Qu,Shangjian Jin,Fuchen Hou,Deyi Fu,Junye Huang,Darryl Foo Chuan Wei,Xiao Chang,Kenji Watanabe,Takashi Taniguchi,Junhao Lin,Shaffique Adam,Barbaros Özyilmaz###
(1802967, 1802969)
 We propose a R<missing VAR>KKYexchange coupling mechanism based on the spin-triplet superconducting orderparameter to mediate such ferromagnetism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[233.0, 1950, 's', 4]

Tc
###Ferromagnetic Superconductivity in Two-dimensional Niobium Diselenide|Tingyu Qu,Shangjian Jin,Fuchen Hou,Deyi Fu,Junye Huang,Darryl Foo Chuan Wei,Xiao Chang,Kenji Watanabe,Takashi Taniguchi,Junhao Lin,Shaffique Adam,Barbaros Özyilmaz###
(1803068, 1803068)
 Theobservation of Hanle precession signals show spin diffusion length up tomicrometres below Tc, demonstrating an intrinsic spin-triplet nature insuperconducting NbSe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[334.0, 1950, 's', 6]

NbSe2
###Ferromagnetic Superconductivity in Two-dimensional Niobium Diselenide|Tingyu Qu,Shangjian Jin,Fuchen Hou,Deyi Fu,Junye Huang,Darryl Foo Chuan Wei,Xiao Chang,Kenji Watanabe,Takashi Taniguchi,Junhao Lin,Shaffique Adam,Barbaros Özyilmaz###
(1803088, 1803090)
 Theobservation of Hanle precession signals show spin diffusion length up tomicrometres below Tc, demonstrating an intrinsic spin-triplet nature insuperconducting NbSe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[354.0, 1950, 's', 6]

S
###Predictable gate-field control of spin in altermagnets with spin-layer coupling|Run-Wu Zhang,Chaoxi Cui,Runze Li,Jingyi Duan,Lei Li,Zhi-Ming Yu,Yugui Yao###
(1803367, 1803367)
 Our methodemploys two-dimensional altermagnets with valley-mediated spin-layer coupling(SL<missing VAR>C), in which electronic states display symmetry-protected andvalley-contrasted spin and layer polarization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 123, 'meV', 3]

C
###Predictable gate-field control of spin in altermagnets with spin-layer coupling|Run-Wu Zhang,Chaoxi Cui,Runze Li,Jingyi Duan,Lei Li,Zhi-Ming Yu,Yugui Yao###
(1803369, 1803369)
 Our methodemploys two-dimensional altermagnets with valley-mediated spin-layer coupling(SL<missing VAR>C), in which electronic states display symmetry-protected andvalley-contrasted spin and layer polarization.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 123, 'meV', 3]

S
###Predictable gate-field control of spin in altermagnets with spin-layer coupling|Run-Wu Zhang,Chaoxi Cui,Runze Li,Jingyi Duan,Lei Li,Zhi-Ming Yu,Yugui Yao###
(1803405, 1803405)
 The SL<missing VAR>C facilitates predictable,continuous, and reversible control of spin polarization using a gate electricfield.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 123, 'meV', 2]

C
###Predictable gate-field control of spin in altermagnets with spin-layer coupling|Run-Wu Zhang,Chaoxi Cui,Runze Li,Jingyi Duan,Lei Li,Zhi-Ming Yu,Yugui Yao###
(1803407, 1803407)
 The SL<missing VAR>C facilitates predictable,continuous, and reversible control of spin polarization using a gate electricfield.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 123, 'meV', 2]

S
###Predictable gate-field control of spin in altermagnets with spin-layer coupling|Run-Wu Zhang,Chaoxi Cui,Runze Li,Jingyi Duan,Lei Li,Zhi-Ming Yu,Yugui Yao###
(1803474, 1803474)
 Through symmetry analysis and ab initio calculations, we pinpointhigh-quality material candidates that exhibit SL<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 123, 'meV', 1]

C
###Predictable gate-field control of spin in altermagnets with spin-layer coupling|Run-Wu Zhang,Chaoxi Cui,Runze Li,Jingyi Duan,Lei Li,Zhi-Ming Yu,Yugui Yao###
(1803476, 1803476)
 Through symmetry analysis and ab initio calculations, we pinpointhigh-quality material candidates that exhibit SL<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 123, 'meV', 1]

V
###Predictable gate-field control of spin in altermagnets with spin-layer coupling|Run-Wu Zhang,Chaoxi Cui,Runze Li,Jingyi Duan,Lei Li,Zhi-Ming Yu,Yugui Yao###
(1803499, 1803499)
 We ascertain that applying agate field of 0.2 e<missing VAR>V/AA to monolayer Ca(CoN)2 can induce significantspin splitting up to 123 meV.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 123, 'meV', 0]

Ca(CoN)2
###Predictable gate-field control of spin in altermagnets with spin-layer coupling|Run-Wu Zhang,Chaoxi Cui,Runze Li,Jingyi Duan,Lei Li,Zhi-Ming Yu,Yugui Yao###
(1803508, 1803513)
 We ascertain that applying agate field of 0.2 e<missing VAR>V/AA to monolayer Ca(CoN)2 can induce significantspin splitting up to 123 meV.
Featurization terminated normally.
0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 123, 'meV', 0]

As
###Predictable gate-field control of spin in altermagnets with spin-layer coupling|Run-Wu Zhang,Chaoxi Cui,Runze Li,Jingyi Duan,Lei Li,Zhi-Ming Yu,Yugui Yao###
(1803532, 1803532)
 As a result, perfect and switchablespin/valley-currents, and substantial tunneling magnetoresistance can beachieved in these materials using only a gate field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 123, 'meV', 1]

TiO3
###Orthorhombic distortion drives orbital ordering in an antiferromagnetic 3$d^1$ Mott insulator|Prithwijit Mandal,Shashank Kumar Ojha,Duo Wang,Ranjan Kumar Patel,Siddharth Kumar,Jyotirmay Maity,Zhan Zhang,Hua Zhou,Christoph Klewe,Padraic Shafer,Biplab Sanyal,Srimanta Middey###
(1803766, 1803768)
 The observationof the antiferromagnetism in RETiO3 (RErare earth) series has beenpuzzling since the celebrated Kugel-Khomskii model of spin-orbital superexchange predicts ferromagnetism in an orbitally degenerate d<missing VAR>1 systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

PrTiO3
###Orthorhombic distortion drives orbital ordering in an antiferromagnetic 3$d^1$ Mott insulator|Prithwijit Mandal,Shashank Kumar Ojha,Duo Wang,Ranjan Kumar Patel,Siddharth Kumar,Jyotirmay Maity,Zhan Zhang,Hua Zhou,Christoph Klewe,Padraic Shafer,Biplab Sanyal,Srimanta Middey###
(1803906, 1803909)
 To address these long-standing questions, we investigate singlecrystalline film of PrTiO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(FOO)
###Orthorhombic distortion drives orbital ordering in an antiferromagnetic 3$d^1$ Mott insulator|Prithwijit Mandal,Shashank Kumar Ojha,Duo Wang,Ranjan Kumar Patel,Siddharth Kumar,Jyotirmay Maity,Zhan Zhang,Hua Zhou,Christoph Klewe,Padraic Shafer,Biplab Sanyal,Srimanta Middey###
(1804006, 1804010)
 We observe similar X<missing VAR>-ray linear dichroism signal in bothparamagnetic and antiferromagnetic phase, which can be accounted by ferroorbital ordering (FOO).
Featurization successful!
0,0,0,0,0,0,0,0.6666666666666666,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FOO
###Orthorhombic distortion drives orbital ordering in an antiferromagnetic 3$d^1$ Mott insulator|Prithwijit Mandal,Shashank Kumar Ojha,Duo Wang,Ranjan Kumar Patel,Siddharth Kumar,Jyotirmay Maity,Zhan Zhang,Hua Zhou,Christoph Klewe,Padraic Shafer,Biplab Sanyal,Srimanta Middey###
(1804079, 1804081)
 While the presence of D2h crystal field does notguarantee lifting of orbital degeneracy always, we find it to be strong enoughin these rare-earth titanates, leading to the FOO state.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TiO3
###Orthorhombic distortion drives orbital ordering in an antiferromagnetic 3$d^1$ Mott insulator|Prithwijit Mandal,Shashank Kumar Ojha,Duo Wang,Ranjan Kumar Patel,Siddharth Kumar,Jyotirmay Maity,Zhan Zhang,Hua Zhou,Christoph Klewe,Padraic Shafer,Biplab Sanyal,Srimanta Middey###
(1804125, 1804127)
 Thus, our workdemonstrates the orthorhombic distortion is the driving force for the orbitalordering of antiferromagnetic RETiO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###General Green's function formalism for transport calculations with spd-Hamiltonians and giant magnetoresistance in Co and Ni based magnetic multilayers|S. Sanvito,C. J. Lambert,J. H. Jefferson,A. M. Bratkovsky###
(1804167, 1804167)
General Greens<missing VAR> function formalism for transport calculations with spd-Hamiltonians and giant magnetoresistance in Co and Ni based magnetic multilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[199.0, 3, 'd', 3],[201.0, 4, 'd', 3],[205.0, 5, 'd', 3]

Ni
###General Green's function formalism for transport calculations with spd-Hamiltonians and giant magnetoresistance in Co and Ni based magnetic multilayers|S. Sanvito,C. J. Lambert,J. H. Jefferson,A. M. Bratkovsky###
(1804171, 1804171)
General Greens<missing VAR> function formalism for transport calculations with spd-Hamiltonians and giant magnetoresistance in Co and Ni based magnetic multilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[195.0, 3, 'd', 3],[197.0, 4, 'd', 3],[201.0, 5, 'd', 3]

CPP
###General Green's function formalism for transport calculations with spd-Hamiltonians and giant magnetoresistance in Co and Ni based magnetic multilayers|S. Sanvito,C. J. Lambert,J. H. Jefferson,A. M. Bratkovsky###
(1804302, 1804304)
 The method is applied to studies ofconductance and giant magnetoresistance (GMR) of magnetic multilayers in CPP(current perpendicular to planes) geometry in the limit of large coherencelength.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[62.0, 3, 'd', 1],[64.0, 4, 'd', 1],[68.0, 5, 'd', 1]

Co
###General Green's function formalism for transport calculations with spd-Hamiltonians and giant magnetoresistance in Co and Ni based magnetic multilayers|S. Sanvito,C. J. Lambert,J. H. Jefferson,A. M. Bratkovsky###
(1804345, 1804345)
 The magnetic materials considered are Co and Ni, with variousnon-magnetic materials from the 3d, 4d, and 5d transition metal series.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 3, 'd', 0],[23.0, 4, 'd', 0],[27.0, 5, 'd', 0]

Ni
###General Green's function formalism for transport calculations with spd-Hamiltonians and giant magnetoresistance in Co and Ni based magnetic multilayers|S. Sanvito,C. J. Lambert,J. H. Jefferson,A. M. Bratkovsky###
(1804349, 1804349)
 The magnetic materials considered are Co and Ni, with variousnon-magnetic materials from the 3d, 4d, and 5d transition metal series.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 3, 'd', 0],[19.0, 4, 'd', 0],[23.0, 5, 'd', 0]

Cu/Co
###General Green's function formalism for transport calculations with spd-Hamiltonians and giant magnetoresistance in Co and Ni based magnetic multilayers|S. Sanvito,C. J. Lambert,J. H. Jefferson,A. M. Bratkovsky###
(1804506, 1804508)
 We have identified three qualitativelydifferent cases which depend on whether or not the bands (densities of states)of a non-magnetic metal (i) form an almost perfect match with one of spinsub-bands of the magnetic metal (as in Cu/Co spin valves); (ii) have almostpure sp character at the Fermi level (e.g.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[140.0, 3, 'd', 2],[138.0, 4, 'd', 2],[134.0, 5, 'd', 2]

Ag
###General Green's function formalism for transport calculations with spd-Hamiltonians and giant magnetoresistance in Co and Ni based magnetic multilayers|S. Sanvito,C. J. Lambert,J. H. Jefferson,A. M. Bratkovsky###
(1804545, 1804545)
 Ag); (iii) have almost pure d<missing VAR>character at the Fermi energy (e.g.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 3, 'd', 3],[177.0, 4, 'd', 3],[173.0, 5, 'd', 3]

Pd
###General Green's function formalism for transport calculations with spd-Hamiltonians and giant magnetoresistance in Co and Ni based magnetic multilayers|S. Sanvito,C. J. Lambert,J. H. Jefferson,A. M. Bratkovsky###
(1804578, 1804578)
 Pd, Pt).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[212.0, 3, 'd', 4],[210.0, 4, 'd', 4],[206.0, 5, 'd', 4]

Pt
###General Green's function formalism for transport calculations with spd-Hamiltonians and giant magnetoresistance in Co and Ni based magnetic multilayers|S. Sanvito,C. J. Lambert,J. H. Jefferson,A. M. Bratkovsky###
(1804581, 1804581)
 Pd, Pt).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[215.0, 3, 'd', 4],[213.0, 4, 'd', 4],[209.0, 5, 'd', 4]

B
###Semiclassical theory of transport in a random magnetic field|F. Evers,A. D. Mirlin,D. G. Polyakov,P. Woelfle###
(1804831, 1804831)
 We study the semiclassical kinetics of 2D fermions in a smoothly varyingmagnetic field B(bf r).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 2, 'D', 0],[83.0, 0, ',', 2]

B0
###Semiclassical theory of transport in a random magnetic field|F. Evers,A. D. Mirlin,D. G. Polyakov,P. Woelfle###
(1804862, 1804863)
 The nature of the transport depends crucially onboth the strength B0 of the random component of B(bf r) and its meanvalue barB.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 2, 'D', 1],[51.0, 0, ',', 1]

B
###Semiclassical theory of transport in a random magnetic field|F. Evers,A. D. Mirlin,D. G. Polyakov,P. Woelfle###
(1804875, 1804875)
 The nature of the transport depends crucially onboth the strength B0 of the random component of B(bf r) and its meanvalue barB.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 2, 'D', 1],[39.0, 0, ',', 1]

B
###Semiclassical theory of transport in a random magnetic field|F. Evers,A. D. Mirlin,D. G. Polyakov,P. Woelfle###
(1804892, 1804892)
 The nature of the transport depends crucially onboth the strength B0 of the random component of B(bf r) and its meanvalue barB.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 2, 'D', 1],[22.0, 0, ',', 1]

B0
###Semiclassical theory of transport in a random magnetic field|F. Evers,A. D. Mirlin,D. G. Polyakov,P. Woelfle###
(1804898, 1804899)
 For barB0, the governing parameter is alphad/R0,where d<missing VAR> is the correlation length of disorder and R<missing VAR>0 is the Larmor radiusin the field B0.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 2, 'D', 2],[15.0, 0, ',', 0]

B0
###Semiclassical theory of transport in a random magnetic field|F. Evers,A. D. Mirlin,D. G. Polyakov,P. Woelfle###
(1804954, 1804955)
 For barB0, the governing parameter is alphad/R0,where d<missing VAR> is the correlation length of disorder and R<missing VAR>0 is the Larmor radiusin the field B0.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 2, 'D', 2],[40.0, 0, ',', 0]

B
###Semiclassical theory of transport in a random magnetic field|F. Evers,A. D. Mirlin,D. G. Polyakov,P. Woelfle###
(1805064, 1805064)
 The conductivity is then determinedby a special class of trajectories, the snake states, which percolate byscattering at the saddle points of B(bf r) where the adiabaticity of theirmotion breaks down.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[250.0, 2, 'D', 4],[150.0, 0, ',', 2]

B
###Semiclassical theory of transport in a random magnetic field|F. Evers,A. D. Mirlin,D. G. Polyakov,P. Woelfle###
(1805182, 1805182)
 This kind ofpercolation is due only to a weak violation of the adiabaticity of thecyclotron rotation, yielding an exponential drop of the conductivity at largebarB.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[368.0, 2, 'D', 6],[268.0, 0, ',', 4]

In
###Semiclassical theory of transport in a random magnetic field|F. Evers,A. D. Mirlin,D. G. Polyakov,P. Woelfle###
(1805185, 1805185)
 In the regime alphagg 1 the crossover between the snake-statepercolation and the percolation of the drift orbits with increasing barBhas the character of a phase transition (localization of snake states) smearedexponentially weakly by non-adiabatic effects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[371.0, 2, 'D', 7],[271.0, 0, ',', 5]

B
###Semiclassical theory of transport in a random magnetic field|F. Evers,A. D. Mirlin,D. G. Polyakov,P. Woelfle###
(1805230, 1805230)
 In the regime alphagg 1 the crossover between the snake-statepercolation and the percolation of the drift orbits with increasing barBhas the character of a phase transition (localization of snake states) smearedexponentially weakly by non-adiabatic effects.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[416.0, 2, 'D', 7],[316.0, 0, ',', 5]

In
###Semiclassical theory of transport in a random magnetic field|F. Evers,A. D. Mirlin,D. G. Polyakov,P. Woelfle###
(1805308, 1805308)
 In particular, it has a sharp kink at zero frequency andfalls off exponentially at higher frequencies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[494.0, 2, 'D', 9],[394.0, 0, ',', 7]

F
###Semiclassical theory of transport in a random magnetic field|F. Evers,A. D. Mirlin,D. G. Polyakov,P. Woelfle###
(1805417, 1805417)
 The shape of the magnetoresistivity at alphasim 1 isin good agreement with experimental data in the FQHE regime near nu1/2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[603.0, 2, 'D', 12],[503.0, 0, ',', 10]

S
###Resonant X-ray Scattering in Manganites - Study of Orbital Degree of Freedom -|Sumio Ishihara,Sadamichi Maekawa###
(1805608, 1805608)
 Development of synchrotron light sources has changed the situation; bythe resonant x<missing VAR>-ray scattering (RXS) technique the orbital ordering hassuccessfully been observed .
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[354.0, 3, 'd', 8]

In
###Resonant X-ray Scattering in Manganites - Study of Orbital Degree of Freedom -|Sumio Ishihara,Sadamichi Maekawa###
(1805630, 1805630)
 In this article, we review progress in the recentstudies of RXS in manganites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[332.0, 3, 'd', 7]

S
###Resonant X-ray Scattering in Manganites - Study of Orbital Degree of Freedom -|Sumio Ishihara,Sadamichi Maekawa###
(1805656, 1805656)
 In this article, we review progress in the recentstudies of RXS in manganites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[306.0, 3, 'd', 7]

S
###Resonant X-ray Scattering in Manganites - Study of Orbital Degree of Freedom -|Sumio Ishihara,Sadamichi Maekawa###
(1805681, 1805681)
 We start with a detailed review of the RXSexperiments applied to the orbital ordered manganites and other correlatedelectron systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[281.0, 3, 'd', 6]

S
###Resonant X-ray Scattering in Manganites - Study of Orbital Degree of Freedom -|Sumio Ishihara,Sadamichi Maekawa###
(1805726, 1805726)
 We derive the scattering cross section of RXS where thetensor character of the atomic scattering factor (ASF) with respect to thex<missing VAR>-ray polarization is stressed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[236.0, 3, 'd', 5]

F
###Resonant X-ray Scattering in Manganites - Study of Orbital Degree of Freedom -|Sumio Ishihara,Sadamichi Maekawa###
(1805750, 1805750)
 We derive the scattering cross section of RXS where thetensor character of the atomic scattering factor (ASF) with respect to thex<missing VAR>-ray polarization is stressed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[212.0, 3, 'd', 5]

SF
###Resonant X-ray Scattering in Manganites - Study of Orbital Degree of Freedom -|Sumio Ishihara,Sadamichi Maekawa###
(1805791, 1805792)
 Microscopic mechanisms of the anisotropictensor character of ASF is introduced and numerical results of ASF and thescattering intensity are presented.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[170.0, 3, 'd', 4]

SF
###Resonant X-ray Scattering in Manganites - Study of Orbital Degree of Freedom -|Sumio Ishihara,Sadamichi Maekawa###
(1805807, 1805808)
 Microscopic mechanisms of the anisotropictensor character of ASF is introduced and numerical results of ASF and thescattering intensity are presented.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 3, 'd', 4]

S
###Resonant X-ray Scattering in Manganites - Study of Orbital Degree of Freedom -|Sumio Ishihara,Sadamichi Maekawa###
(1805849, 1805849)
 The azimuthal angle scan is a uniqueexperimental method to identify RXS from the orbital degree of freedom.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 3, 'd', 3]

S
###Resonant X-ray Scattering in Manganites - Study of Orbital Degree of Freedom -|Sumio Ishihara,Sadamichi Maekawa###
(1805889, 1805889)
 Atheory of the azimuthal angle and polarization dependence of the RXS intensityis presented.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 3, 'd', 2]

SF
###Resonant X-ray Scattering in Manganites - Study of Orbital Degree of Freedom -|Sumio Ishihara,Sadamichi Maekawa###
(1805936, 1805937)
 Apart from the microscopic description of ASF, a theoreticalframework of RXS to relate directly to the 3d orbital is presented.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 3, 'd', 0]

S
###Resonant X-ray Scattering in Manganites - Study of Orbital Degree of Freedom -|Sumio Ishihara,Sadamichi Maekawa###
(1805951, 1805951)
 Apart from the microscopic description of ASF, a theoreticalframework of RXS to relate directly to the 3d orbital is presented.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 3, 'd', 0]

C
###Theoretical Study of Half-Doped Models for Manganites: Fragility of the CE Phase with Disorder, Two Types of Colossal Magnetoresistances, and Charge-Ordered States for Electron-Doped Materials|H. Aliaga,D. Magnoux,A. Moreo,D. Poilblanc,S. Yunoki,E. Dagotto###
(1806097, 1806097)
Theoretical Study of Half-Doped Models for Manganites Fragility of the CE<missing VAR> Phase with Disorder, Two Types of Colossal Magnetoresistances, and Charge-Ordered States for Electron-Doped Materials.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Theoretical Study of Half-Doped Models for Manganites: Fragility of the CE Phase with Disorder, Two Types of Colossal Magnetoresistances, and Charge-Ordered States for Electron-Doped Materials|H. Aliaga,D. Magnoux,A. Moreo,D. Poilblanc,S. Yunoki,E. Dagotto###
(1806232, 1806232)
 A variety of novel resultsare reported (i) The phase diagram is established in the lambda-J<missing VAR> AF plane,with lambda the electron-phonon coupling and J<missing VAR>AF the antiferromagneticexchange between classical t2g spins.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Theoretical Study of Half-Doped Models for Manganites: Fragility of the CE Phase with Disorder, Two Types of Colossal Magnetoresistances, and Charge-Ordered States for Electron-Doped Materials|H. Aliaga,D. Magnoux,A. Moreo,D. Poilblanc,S. Yunoki,E. Dagotto###
(1806254, 1806254)
 A variety of novel resultsare reported (i) The phase diagram is established in the lambda-J<missing VAR> AF plane,with lambda the electron-phonon coupling and J<missing VAR>AF the antiferromagneticexchange between classical t2g spins.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Theoretical Study of Half-Doped Models for Manganites: Fragility of the CE Phase with Disorder, Two Types of Colossal Magnetoresistances, and Charge-Ordered States for Electron-Doped Materials|H. Aliaga,D. Magnoux,A. Moreo,D. Poilblanc,S. Yunoki,E. Dagotto###
(1806292, 1806292)
 The results include standard phases,such as the CE<missing VAR>-insulating and FM<missing VAR>-metallic regimes, but they also unveil novelstates, such as a ferromagnetic charge-ordered (CO) orbital-ordered phasecompatible with recent experimental results by Loudon et al.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Theoretical Study of Half-Doped Models for Manganites: Fragility of the CE Phase with Disorder, Two Types of Colossal Magnetoresistances, and Charge-Ordered States for Electron-Doped Materials|H. Aliaga,D. Magnoux,A. Moreo,D. Poilblanc,S. Yunoki,E. Dagotto###
(1806299, 1806299)
 The results include standard phases,such as the CE<missing VAR>-insulating and FM<missing VAR>-metallic regimes, but they also unveil novelstates, such as a ferromagnetic charge-ordered (CO) orbital-ordered phasecompatible with recent experimental results by Loudon et al.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(CO)
###Theoretical Study of Half-Doped Models for Manganites: Fragility of the CE Phase with Disorder, Two Types of Colossal Magnetoresistances, and Charge-Ordered States for Electron-Doped Materials|H. Aliaga,D. Magnoux,A. Moreo,D. Poilblanc,S. Yunoki,E. Dagotto###
(1806333, 1806336)
 The results include standard phases,such as the CE<missing VAR>-insulating and FM<missing VAR>-metallic regimes, but they also unveil novelstates, such as a ferromagnetic charge-ordered (CO) orbital-ordered phasecompatible with recent experimental results by Loudon et al.
Featurization successful!
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CO
###Theoretical Study of Half-Doped Models for Manganites: Fragility of the CE Phase with Disorder, Two Types of Colossal Magnetoresistances, and Charge-Ordered States for Electron-Doped Materials|H. Aliaga,D. Magnoux,A. Moreo,D. Poilblanc,S. Yunoki,E. Dagotto###
(1806396, 1806397)
 (ii) For realisticcouplings, it was observed that the charge disproportionation delta of the COphase is far from the widely accepted extreme limit delta0.5 of a 3/4 chargeseparation.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Theoretical Study of Half-Doped Models for Manganites: Fragility of the CE Phase with Disorder, Two Types of Colossal Magnetoresistances, and Charge-Ordered States for Electron-Doped Materials|H. Aliaga,D. Magnoux,A. Moreo,D. Poilblanc,S. Yunoki,E. Dagotto###
(1806493, 1806493)
 (iii) Colossalmagnetoresistance (CMR) effects are found in calculations of clusterresistances using the Landauer formalism.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Theoretical Study of Half-Doped Models for Manganites: Fragility of the CE Phase with Disorder, Two Types of Colossal Magnetoresistances, and Charge-Ordered States for Electron-Doped Materials|H. Aliaga,D. Magnoux,A. Moreo,D. Poilblanc,S. Yunoki,E. Dagotto###
(1806563, 1806563)
 (iv)The CE<missing VAR>-state is found to be (very sensitive to disorder) since its long-rangeorder rapidly disappears when quenched-disorder is introduced, contrary to theFM<missing VAR> state which is more robust.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Theoretical Study of Half-Doped Models for Manganites: Fragility of the CE Phase with Disorder, Two Types of Colossal Magnetoresistances, and Charge-Ordered States for Electron-Doped Materials|H. Aliaga,D. Magnoux,A. Moreo,D. Poilblanc,S. Yunoki,E. Dagotto###
(1806619, 1806619)
 (iv)The CE<missing VAR>-state is found to be (very sensitive to disorder) since its long-rangeorder rapidly disappears when quenched-disorder is introduced, contrary to theFM<missing VAR> state which is more robust.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Theoretical Study of Half-Doped Models for Manganites: Fragility of the CE Phase with Disorder, Two Types of Colossal Magnetoresistances, and Charge-Ordered States for Electron-Doped Materials|H. Aliaga,D. Magnoux,A. Moreo,D. Poilblanc,S. Yunoki,E. Dagotto###
(1806736, 1806736)
 Acharge-ordered state is found which is the analog of the x<missing VAR>0.5 CE<missing VAR> phase.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I3
###The Dependence of the Superconducting Transition Temperature of Organic Molecular Crystals on Intrinsically Non-Magnetic Disorder: a Signature of either Unconventional Superconductivity or Novel Local Magnetic Moment Formation|B. J. Powell,Ross H. McKenzie###
(1806931, 1806932)
 We give a theoretical analysis of published experimental studies of theeffects of impurities and disorder on the superconducting transitiontemperature, Tc, of the organic molecular crystals kappa-ET2X<missing VAR> and beta-ET2X<missing VAR>(where ET is bis(ethylenedithio)tetrathiafulvalene and X<missing VAR> is an anion eg I3).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[345.0, 2, ',', 7]

B
###Magnetoresistance and dephasing in a two-dimensional electron gas at intermediate conductances|G. M. Minkov,A. V. Germanenko,I. V. Gornyi###
(1807542, 1807542)
 We study, both theoretically and experimentally, the negativemagnetoresistance (MR) of a two-dimensional (2D) electron gas in a weaktransverse magnetic field B.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 2, 'D', 2],[408.0, 0, '>', 5],[527.0, 0, ',', 7]

B
###Magnetoresistance and dephasing in a two-dimensional electron gas at intermediate conductances|G. M. Minkov,A. V. Germanenko,I. V. Gornyi###
(1807568, 1807568)
 The analysis is carried out in a wide range ofzero-B conductances g<missing VAR> (measured in units of e<missing VAR>2/h), including the rangeof intermediate conductances, g<missing VAR>sim 1.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 2, 'D', 1],[382.0, 0, '>', 4],[501.0, 0, ',', 6]

GaAs/In
###Magnetoresistance and dephasing in a two-dimensional electron gas at intermediate conductances|G. M. Minkov,A. V. Germanenko,I. V. Gornyi###
(1807634, 1807637)
 Interpretation of the experimentalresults obtained for a 2D electron gas in GaAs/Inx<missing VAR>Ga1-xAs/GaAs singlequantum well structures is based on the theory which takes into account termsof higher orders in 1/g<missing VAR>, stemming from both the interference contribution andthe mutual effect of weak localization (WL) and Coulomb interaction.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[8.0, 2, 'D', 0],[313.0, 0, '>', 3],[432.0, 0, ',', 5]

Ga1-xAs/GaAs
###Magnetoresistance and dephasing in a two-dimensional electron gas at intermediate conductances|G. M. Minkov,A. V. Germanenko,I. V. Gornyi###
(1807639, 1807646)
 Interpretation of the experimentalresults obtained for a 2D electron gas in GaAs/Inx<missing VAR>Ga1-xAs/GaAs singlequantum well structures is based on the theory which takes into account termsof higher orders in 1/g<missing VAR>, stemming from both the interference contribution andthe mutual effect of weak localization (WL) and Coulomb interaction.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[13.0, 2, 'D', 0],[304.0, 0, '>', 3],[423.0, 0, ',', 5]

BaCo2O5.5
###Magnetization and Magnetotransport of LnBaCo2O5.5 (Ln=Gd, Eu) Single Crystals|Z. X. Zhou,S. McCall,C. S. Alexander,J. E. Crow,P. Schlottmann,S. N. Barilo,S. V. Shiryaev,G. L Bychkov,R. P. Guertin###
(1808105, 1808109)
Magnetization and Magnetotransport of LnBaCo2O5.5 (LnGd, Eu) Single Crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6470588235294118,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23529411764705882,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.11764705882352941,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 30, 'T', 1],[157.0, 1, 'intermediate', 2],[241.0, 365, 'and', 3],[242.0, 335, 'K', 3],[340.0, 270, 'K', 5],[420.0, 2, 'K', 6]

Gd
###Magnetization and Magnetotransport of LnBaCo2O5.5 (Ln=Gd, Eu) Single Crystals|Z. X. Zhou,S. McCall,C. S. Alexander,J. E. Crow,P. Schlottmann,S. N. Barilo,S. V. Shiryaev,G. L Bychkov,R. P. Guertin###
(1808113, 1808113)
Magnetization and Magnetotransport of LnBaCo2O5.5 (LnGd, Eu) Single Crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 30, 'T', 1],[153.0, 1, 'intermediate', 2],[237.0, 365, 'and', 3],[238.0, 335, 'K', 3],[336.0, 270, 'K', 5],[416.0, 2, 'K', 6]

Eu
###Magnetization and Magnetotransport of LnBaCo2O5.5 (Ln=Gd, Eu) Single Crystals|Z. X. Zhou,S. McCall,C. S. Alexander,J. E. Crow,P. Schlottmann,S. N. Barilo,S. V. Shiryaev,G. L Bychkov,R. P. Guertin###
(1808116, 1808116)
Magnetization and Magnetotransport of LnBaCo2O5.5 (LnGd, Eu) Single Crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 30, 'T', 1],[150.0, 1, 'intermediate', 2],[234.0, 365, 'and', 3],[235.0, 335, 'K', 3],[333.0, 270, 'K', 5],[413.0, 2, 'K', 6]

GdBaCo2O5.5
###Magnetization and Magnetotransport of LnBaCo2O5.5 (Ln=Gd, Eu) Single Crystals|Z. X. Zhou,S. McCall,C. S. Alexander,J. E. Crow,P. Schlottmann,S. N. Barilo,S. V. Shiryaev,G. L Bychkov,R. P. Guertin###
(1808149, 1808154)
 The magnetization, resistivity and magnetoresistance (MR) of single crystalsof GdBaCo2O5.5 and EuBaCo2O5.5 are measured over a wide range of dc magneticfields (up to 30 T) and temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5789473684210527,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.21052631578947367,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.10526315789473684,0,0,0,0,0,0,0,0.10526315789473684,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 30, 'T', 0],[112.0, 1, 'intermediate', 1],[196.0, 365, 'and', 2],[197.0, 335, 'K', 2],[295.0, 270, 'K', 4],[375.0, 2, 'K', 5]

EuBaCo2O5.5
###Magnetization and Magnetotransport of LnBaCo2O5.5 (Ln=Gd, Eu) Single Crystals|Z. X. Zhou,S. McCall,C. S. Alexander,J. E. Crow,P. Schlottmann,S. N. Barilo,S. V. Shiryaev,G. L Bychkov,R. P. Guertin###
(1808158, 1808163)
 The magnetization, resistivity and magnetoresistance (MR) of single crystalsof GdBaCo2O5.5 and EuBaCo2O5.5 are measured over a wide range of dc magneticfields (up to 30 T) and temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5789473684210527,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.21052631578947367,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.10526315789473684,0,0,0,0,0,0,0.10526315789473684,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 30, 'T', 0],[103.0, 1, 'intermediate', 1],[187.0, 365, 'and', 2],[188.0, 335, 'K', 2],[286.0, 270, 'K', 4],[366.0, 2, 'K', 5]

In
###Magnetization and Magnetotransport of LnBaCo2O5.5 (Ln=Gd, Eu) Single Crystals|Z. X. Zhou,S. McCall,C. S. Alexander,J. E. Crow,P. Schlottmann,S. N. Barilo,S. V. Shiryaev,G. L Bychkov,R. P. Guertin###
(1808198, 1808198)
 In LnBaCo2O5.5 (LnGd, Eu), the Co-ionsare trivalent and can exist in three spin states, namely, the S0 low spinstate (L<missing VAR>S), the S 1 intermediate spin state (IS) and the S2 high spin state(HS).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 30, 'T', 1],[68.0, 1, 'intermediate', 0],[152.0, 365, 'and', 1],[153.0, 335, 'K', 1],[251.0, 270, 'K', 3],[331.0, 2, 'K', 4]

BaCo2O5.5
###Magnetization and Magnetotransport of LnBaCo2O5.5 (Ln=Gd, Eu) Single Crystals|Z. X. Zhou,S. McCall,C. S. Alexander,J. E. Crow,P. Schlottmann,S. N. Barilo,S. V. Shiryaev,G. L Bychkov,R. P. Guertin###
(1808201, 1808205)
 In LnBaCo2O5.5 (LnGd, Eu), the Co-ionsare trivalent and can exist in three spin states, namely, the S0 low spinstate (L<missing VAR>S), the S 1 intermediate spin state (IS) and the S2 high spin state(HS).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6470588235294118,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23529411764705882,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.11764705882352941,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 30, 'T', 1],[61.0, 1, 'intermediate', 0],[145.0, 365, 'and', 1],[146.0, 335, 'K', 1],[244.0, 270, 'K', 3],[324.0, 2, 'K', 4]

Gd
###Magnetization and Magnetotransport of LnBaCo2O5.5 (Ln=Gd, Eu) Single Crystals|Z. X. Zhou,S. McCall,C. S. Alexander,J. E. Crow,P. Schlottmann,S. N. Barilo,S. V. Shiryaev,G. L Bychkov,R. P. Guertin###
(1808209, 1808209)
 In LnBaCo2O5.5 (LnGd, Eu), the Co-ionsare trivalent and can exist in three spin states, namely, the S0 low spinstate (L<missing VAR>S), the S 1 intermediate spin state (IS) and the S2 high spin state(HS).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 30, 'T', 1],[57.0, 1, 'intermediate', 0],[141.0, 365, 'and', 1],[142.0, 335, 'K', 1],[240.0, 270, 'K', 3],[320.0, 2, 'K', 4]

Eu
###Magnetization and Magnetotransport of LnBaCo2O5.5 (Ln=Gd, Eu) Single Crystals|Z. X. Zhou,S. McCall,C. S. Alexander,J. E. Crow,P. Schlottmann,S. N. Barilo,S. V. Shiryaev,G. L Bychkov,R. P. Guertin###
(1808212, 1808212)
 In LnBaCo2O5.5 (LnGd, Eu), the Co-ionsare trivalent and can exist in three spin states, namely, the S0 low spinstate (L<missing VAR>S), the S 1 intermediate spin state (IS) and the S2 high spin state(HS).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 30, 'T', 1],[54.0, 1, 'intermediate', 0],[138.0, 365, 'and', 1],[139.0, 335, 'K', 1],[237.0, 270, 'K', 3],[317.0, 2, 'K', 4]

Co
###Magnetization and Magnetotransport of LnBaCo2O5.5 (Ln=Gd, Eu) Single Crystals|Z. X. Zhou,S. McCall,C. S. Alexander,J. E. Crow,P. Schlottmann,S. N. Barilo,S. V. Shiryaev,G. L Bychkov,R. P. Guertin###
(1808218, 1808218)
 In LnBaCo2O5.5 (LnGd, Eu), the Co-ionsare trivalent and can exist in three spin states, namely, the S0 low spinstate (L<missing VAR>S), the S 1 intermediate spin state (IS) and the S2 high spin state(HS).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 30, 'T', 1],[48.0, 1, 'intermediate', 0],[132.0, 365, 'and', 1],[133.0, 335, 'K', 1],[231.0, 270, 'K', 3],[311.0, 2, 'K', 4]

S0
###Magnetization and Magnetotransport of LnBaCo2O5.5 (Ln=Gd, Eu) Single Crystals|Z. X. Zhou,S. McCall,C. S. Alexander,J. E. Crow,P. Schlottmann,S. N. Barilo,S. V. Shiryaev,G. L Bychkov,R. P. Guertin###
(1808247, 1808248)
 In LnBaCo2O5.5 (LnGd, Eu), the Co-ionsare trivalent and can exist in three spin states, namely, the S0 low spinstate (L<missing VAR>S), the S 1 intermediate spin state (IS) and the S2 high spin state(HS).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 30, 'T', 1],[18.0, 1, 'intermediate', 0],[102.0, 365, 'and', 1],[103.0, 335, 'K', 1],[201.0, 270, 'K', 3],[281.0, 2, 'K', 4]

S
###Magnetization and Magnetotransport of LnBaCo2O5.5 (Ln=Gd, Eu) Single Crystals|Z. X. Zhou,S. McCall,C. S. Alexander,J. E. Crow,P. Schlottmann,S. N. Barilo,S. V. Shiryaev,G. L Bychkov,R. P. Guertin###
(1808259, 1808259)
 In LnBaCo2O5.5 (LnGd, Eu), the Co-ionsare trivalent and can exist in three spin states, namely, the S0 low spinstate (L<missing VAR>S), the S 1 intermediate spin state (IS) and the S2 high spin state(HS).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 30, 'T', 1],[7.0, 1, 'intermediate', 0],[91.0, 365, 'and', 1],[92.0, 335, 'K', 1],[190.0, 270, 'K', 3],[270.0, 2, 'K', 4]

S
###Magnetization and Magnetotransport of LnBaCo2O5.5 (Ln=Gd, Eu) Single Crystals|Z. X. Zhou,S. McCall,C. S. Alexander,J. E. Crow,P. Schlottmann,S. N. Barilo,S. V. Shiryaev,G. L Bychkov,R. P. Guertin###
(1808265, 1808265)
 In LnBaCo2O5.5 (LnGd, Eu), the Co-ionsare trivalent and can exist in three spin states, namely, the S0 low spinstate (L<missing VAR>S), the S 1 intermediate spin state (IS) and the S2 high spin state(HS).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 30, 'T', 1],[1.0, 1, 'intermediate', 0],[85.0, 365, 'and', 1],[86.0, 335, 'K', 1],[184.0, 270, 'K', 3],[264.0, 2, 'K', 4]

(IS)
###Magnetization and Magnetotransport of LnBaCo2O5.5 (Ln=Gd, Eu) Single Crystals|Z. X. Zhou,S. McCall,C. S. Alexander,J. E. Crow,P. Schlottmann,S. N. Barilo,S. V. Shiryaev,G. L Bychkov,R. P. Guertin###
(1808272, 1808275)
 In LnBaCo2O5.5 (LnGd, Eu), the Co-ionsare trivalent and can exist in three spin states, namely, the S0 low spinstate (L<missing VAR>S), the S 1 intermediate spin state (IS) and the S2 high spin state(HS).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 30, 'T', 1],[6.0, 1, 'intermediate', 0],[75.0, 365, 'and', 1],[76.0, 335, 'K', 1],[174.0, 270, 'K', 3],[254.0, 2, 'K', 4]

S2
###Magnetization and Magnetotransport of LnBaCo2O5.5 (Ln=Gd, Eu) Single Crystals|Z. X. Zhou,S. McCall,C. S. Alexander,J. E. Crow,P. Schlottmann,S. N. Barilo,S. V. Shiryaev,G. L Bychkov,R. P. Guertin###
(1808281, 1808282)
 In LnBaCo2O5.5 (LnGd, Eu), the Co-ionsare trivalent and can exist in three spin states, namely, the S0 low spinstate (L<missing VAR>S), the S 1 intermediate spin state (IS) and the S2 high spin state(HS).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 30, 'T', 1],[15.0, 1, 'intermediate', 0],[68.0, 365, 'and', 1],[69.0, 335, 'K', 1],[167.0, 270, 'K', 3],[247.0, 2, 'K', 4]

(HS)
###Magnetization and Magnetotransport of LnBaCo2O5.5 (Ln=Gd, Eu) Single Crystals|Z. X. Zhou,S. McCall,C. S. Alexander,J. E. Crow,P. Schlottmann,S. N. Barilo,S. V. Shiryaev,G. L Bychkov,R. P. Guertin###
(1808291, 1808294)
 In LnBaCo2O5.5 (LnGd, Eu), the Co-ionsare trivalent and can exist in three spin states, namely, the S0 low spinstate (L<missing VAR>S), the S 1 intermediate spin state (IS) and the S2 high spin state(HS).
Featurization successful!
0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 30, 'T', 1],[25.0, 1, 'intermediate', 0],[56.0, 365, 'and', 1],[57.0, 335, 'K', 1],[155.0, 270, 'K', 3],[235.0, 2, 'K', 4]

GdBaCo2O5.5
###Magnetization and Magnetotransport of LnBaCo2O5.5 (Ln=Gd, Eu) Single Crystals|Z. X. Zhou,S. McCall,C. S. Alexander,J. E. Crow,P. Schlottmann,S. N. Barilo,S. V. Shiryaev,G. L Bychkov,R. P. Guertin###
(1808303, 1808308)
 We confirm that GdBaCo2O5.5 and EuBaCo2O5.5 have a metal-insulatortransition accompanied by a spin-state transition at TMI >> 365 and 335 K,respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5789473684210527,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.21052631578947367,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.10526315789473684,0,0,0,0,0,0,0,0.10526315789473684,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 30, 'T', 2],[37.0, 1, 'intermediate', 1],[42.0, 365, 'and', 0],[43.0, 335, 'K', 0],[141.0, 270, 'K', 2],[221.0, 2, 'K', 3]

EuBaCo2O5.5
###Magnetization and Magnetotransport of LnBaCo2O5.5 (Ln=Gd, Eu) Single Crystals|Z. X. Zhou,S. McCall,C. S. Alexander,J. E. Crow,P. Schlottmann,S. N. Barilo,S. V. Shiryaev,G. L Bychkov,R. P. Guertin###
(1808312, 1808317)
 We confirm that GdBaCo2O5.5 and EuBaCo2O5.5 have a metal-insulatortransition accompanied by a spin-state transition at TMI >> 365 and 335 K,respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5789473684210527,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.21052631578947367,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.10526315789473684,0,0,0,0,0,0,0.10526315789473684,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 30, 'T', 2],[46.0, 1, 'intermediate', 1],[33.0, 365, 'and', 0],[34.0, 335, 'K', 0],[132.0, 270, 'K', 2],[212.0, 2, 'K', 3]

I
###Magnetization and Magnetotransport of LnBaCo2O5.5 (Ln=Gd, Eu) Single Crystals|Z. X. Zhou,S. McCall,C. S. Alexander,J. E. Crow,P. Schlottmann,S. N. Barilo,S. V. Shiryaev,G. L Bychkov,R. P. Guertin###
(1808346, 1808346)
 We confirm that GdBaCo2O5.5 and EuBaCo2O5.5 have a metal-insulatortransition accompanied by a spin-state transition at TMI >> 365 and 335 K,respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 30, 'T', 2],[80.0, 1, 'intermediate', 1],[4.0, 365, 'and', 0],[5.0, 335, 'K', 0],[103.0, 270, 'K', 2],[183.0, 2, 'K', 3]

S
###Magnetization and Magnetotransport of LnBaCo2O5.5 (Ln=Gd, Eu) Single Crystals|Z. X. Zhou,S. McCall,C. S. Alexander,J. E. Crow,P. Schlottmann,S. N. Barilo,S. V. Shiryaev,G. L Bychkov,R. P. Guertin###
(1808373, 1808373)
 The data suggest an equal ratio of L<missing VAR>S (S0) and IS (S1) Co3ions below TMI, with no indication of additional spin state transitions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[183.0, 30, 'T', 3],[107.0, 1, 'intermediate', 2],[23.0, 365, 'and', 1],[22.0, 335, 'K', 1],[76.0, 270, 'K', 1],[156.0, 2, 'K', 2]

(S0)
###Magnetization and Magnetotransport of LnBaCo2O5.5 (Ln=Gd, Eu) Single Crystals|Z. X. Zhou,S. McCall,C. S. Alexander,J. E. Crow,P. Schlottmann,S. N. Barilo,S. V. Shiryaev,G. L Bychkov,R. P. Guertin###
(1808375, 1808378)
 The data suggest an equal ratio of L<missing VAR>S (S0) and IS (S1) Co3ions below TMI, with no indication of additional spin state transitions.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[185.0, 30, 'T', 3],[109.0, 1, 'intermediate', 2],[25.0, 365, 'and', 1],[24.0, 335, 'K', 1],[71.0, 270, 'K', 1],[151.0, 2, 'K', 2]

IS
###Magnetization and Magnetotransport of LnBaCo2O5.5 (Ln=Gd, Eu) Single Crystals|Z. X. Zhou,S. McCall,C. S. Alexander,J. E. Crow,P. Schlottmann,S. N. Barilo,S. V. Shiryaev,G. L Bychkov,R. P. Guertin###
(1808382, 1808383)
 The data suggest an equal ratio of L<missing VAR>S (S0) and IS (S1) Co3ions below TMI, with no indication of additional spin state transitions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[192.0, 30, 'T', 3],[116.0, 1, 'intermediate', 2],[32.0, 365, 'and', 1],[31.0, 335, 'K', 1],[66.0, 270, 'K', 1],[146.0, 2, 'K', 2]

(S1)
###Magnetization and Magnetotransport of LnBaCo2O5.5 (Ln=Gd, Eu) Single Crystals|Z. X. Zhou,S. McCall,C. S. Alexander,J. E. Crow,P. Schlottmann,S. N. Barilo,S. V. Shiryaev,G. L Bychkov,R. P. Guertin###
(1808385, 1808388)
 The data suggest an equal ratio of L<missing VAR>S (S0) and IS (S1) Co3ions below TMI, with no indication of additional spin state transitions.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[195.0, 30, 'T', 3],[119.0, 1, 'intermediate', 2],[35.0, 365, 'and', 1],[34.0, 335, 'K', 1],[61.0, 270, 'K', 1],[141.0, 2, 'K', 2]

Co3
###Magnetization and Magnetotransport of LnBaCo2O5.5 (Ln=Gd, Eu) Single Crystals|Z. X. Zhou,S. McCall,C. S. Alexander,J. E. Crow,P. Schlottmann,S. N. Barilo,S. V. Shiryaev,G. L Bychkov,R. P. Guertin###
(1808390, 1808391)
 The data suggest an equal ratio of L<missing VAR>S (S0) and IS (S1) Co3ions below TMI, with no indication of additional spin state transitions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[200.0, 30, 'T', 3],[124.0, 1, 'intermediate', 2],[40.0, 365, 'and', 1],[39.0, 335, 'K', 1],[58.0, 270, 'K', 1],[138.0, 2, 'K', 2]

I
###Magnetization and Magnetotransport of LnBaCo2O5.5 (Ln=Gd, Eu) Single Crystals|Z. X. Zhou,S. McCall,C. S. Alexander,J. E. Crow,P. Schlottmann,S. N. Barilo,S. V. Shiryaev,G. L Bychkov,R. P. Guertin###
(1808400, 1808400)
 The data suggest an equal ratio of L<missing VAR>S (S0) and IS (S1) Co3ions below TMI, with no indication of additional spin state transitions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[210.0, 30, 'T', 3],[134.0, 1, 'intermediate', 2],[50.0, 365, 'and', 1],[49.0, 335, 'K', 1],[49.0, 270, 'K', 1],[129.0, 2, 'K', 2]

Gd
###Magnetization and Magnetotransport of LnBaCo2O5.5 (Ln=Gd, Eu) Single Crystals|Z. X. Zhou,S. McCall,C. S. Alexander,J. E. Crow,P. Schlottmann,S. N. Barilo,S. V. Shiryaev,G. L Bychkov,R. P. Guertin###
(1808503, 1808503)
 The magnetization dataare suggestive of weak correlations between the Gd-spins but no clear signatureof ordering is seen for T<missing VAR> > 2 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[313.0, 30, 'T', 5],[237.0, 1, 'intermediate', 4],[153.0, 365, 'and', 3],[152.0, 335, 'K', 3],[54.0, 270, 'K', 1],[26.0, 2, 'K', 0]

GdBaCo2O5.5
###Magnetization and Magnetotransport of LnBaCo2O5.5 (Ln=Gd, Eu) Single Crystals|Z. X. Zhou,S. McCall,C. S. Alexander,J. E. Crow,P. Schlottmann,S. N. Barilo,S. V. Shiryaev,G. L Bychkov,R. P. Guertin###
(1808577, 1808582)
 For GdBaCo2O5.5, the resistivity and MR data imply a strongcorrelation between the spin-order and charge carriers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5789473684210527,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.21052631578947367,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.10526315789473684,0,0,0,0,0,0,0,0.10526315789473684,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[387.0, 30, 'T', 7],[311.0, 1, 'intermediate', 6],[227.0, 365, 'and', 5],[226.0, 335, 'K', 5],[128.0, 270, 'K', 3],[48.0, 2, 'K', 2]

EuBaCo2O5.5
###Magnetization and Magnetotransport of LnBaCo2O5.5 (Ln=Gd, Eu) Single Crystals|Z. X. Zhou,S. McCall,C. S. Alexander,J. E. Crow,P. Schlottmann,S. N. Barilo,S. V. Shiryaev,G. L Bychkov,R. P. Guertin###
(1808622, 1808627)
 For EuBaCo2O5.5, themagnetic phase diagram is very similar to its Gd counterpart, but the low-T MRwith current flow in the ab plane is positive rather than negative as for Gd.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5789473684210527,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.21052631578947367,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.10526315789473684,0,0,0,0,0,0,0.10526315789473684,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[432.0, 30, 'T', 8],[356.0, 1, 'intermediate', 7],[272.0, 365, 'and', 6],[271.0, 335, 'K', 6],[173.0, 270, 'K', 4],[93.0, 2, 'K', 3]

Gd
###Magnetization and Magnetotransport of LnBaCo2O5.5 (Ln=Gd, Eu) Single Crystals|Z. X. Zhou,S. McCall,C. S. Alexander,J. E. Crow,P. Schlottmann,S. N. Barilo,S. V. Shiryaev,G. L Bychkov,R. P. Guertin###
(1808649, 1808649)
 For EuBaCo2O5.5, themagnetic phase diagram is very similar to its Gd counterpart, but the low-T MRwith current flow in the ab plane is positive rather than negative as for Gd.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[459.0, 30, 'T', 8],[383.0, 1, 'intermediate', 7],[299.0, 365, 'and', 6],[298.0, 335, 'K', 6],[200.0, 270, 'K', 4],[120.0, 2, 'K', 3]

Gd
###Magnetization and Magnetotransport of LnBaCo2O5.5 (Ln=Gd, Eu) Single Crystals|Z. X. Zhou,S. McCall,C. S. Alexander,J. E. Crow,P. Schlottmann,S. N. Barilo,S. V. Shiryaev,G. L Bychkov,R. P. Guertin###
(1808694, 1808694)
 For EuBaCo2O5.5, themagnetic phase diagram is very similar to its Gd counterpart, but the low-T MRwith current flow in the ab plane is positive rather than negative as for Gd.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[504.0, 30, 'T', 8],[428.0, 1, 'intermediate', 7],[344.0, 365, 'and', 6],[343.0, 335, 'K', 6],[245.0, 270, 'K', 4],[165.0, 2, 'K', 3]

EuBaCo2O5.5
###Magnetization and Magnetotransport of LnBaCo2O5.5 (Ln=Gd, Eu) Single Crystals|Z. X. Zhou,S. McCall,C. S. Alexander,J. E. Crow,P. Schlottmann,S. N. Barilo,S. V. Shiryaev,G. L Bychkov,R. P. Guertin###
(1808717, 1808722)
The magnitude and the hysteresis of the MR for EuBaCo2O5.5 decrease withincreasing temperature, and at higher T<missing VAR> the MR changes sign and becomesnegative.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5789473684210527,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.21052631578947367,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.10526315789473684,0,0,0,0,0,0,0.10526315789473684,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[527.0, 30, 'T', 9],[451.0, 1, 'intermediate', 8],[367.0, 365, 'and', 7],[366.0, 335, 'K', 7],[268.0, 270, 'K', 5],[188.0, 2, 'K', 4]

Eu
###Magnetization and Magnetotransport of LnBaCo2O5.5 (Ln=Gd, Eu) Single Crystals|Z. X. Zhou,S. McCall,C. S. Alexander,J. E. Crow,P. Schlottmann,S. N. Barilo,S. V. Shiryaev,G. L Bychkov,R. P. Guertin###
(1808796, 1808796)
 The difference in the behavior of both compounds may arise from asmall valence admixture in the nonmagnetic Eu ions, i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[606.0, 30, 'T', 10],[530.0, 1, 'intermediate', 9],[446.0, 365, 'and', 8],[445.0, 335, 'K', 8],[347.0, 270, 'K', 6],[267.0, 2, 'K', 5]

Ti
###Structure, magnetic and transport properties of Ti-substituted La0.7Sr0.3MnO3|M. S. Kim,J. B. Yang,Q. Cai,X. D. Zhou,W. J. James,W. B. Yelon,P. E. Parris,D. Buddhikot,S. K. Malik###
(1808841, 1808841)
Structure, magnetic and transport properties of Ti-substituted La0.7Sr0.3MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 0, 'to', 1],[40.0, 0.2, ',', 1],[100.0, 10, 'K', 2],[154.0, 10, 'K', 4],[179.0, 0.1, ',', 4],[194.0, 0.1, ',', 4],[249.0, 0.15, ',', 5],[335.0, 0.05, 'samples', 6],[362.0, 0.1, 'samples', 7],[423.0, 2, 'p', 9],[550.0, 70, '%', 12]

La0.7Sr0.3MnO3
###Structure, magnetic and transport properties of Ti-substituted La0.7Sr0.3MnO3|M. S. Kim,J. B. Yang,Q. Cai,X. D. Zhou,W. J. James,W. B. Yelon,P. E. Parris,D. Buddhikot,S. K. Malik###
(1808845, 1808851)
Structure, magnetic and transport properties of Ti-substituted La0.7Sr0.3MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 0, 'to', 1],[30.0, 0.2, ',', 1],[90.0, 10, 'K', 2],[144.0, 10, 'K', 4],[169.0, 0.1, ',', 4],[184.0, 0.1, ',', 4],[239.0, 0.15, ',', 5],[325.0, 0.05, 'samples', 6],[352.0, 0.1, 'samples', 7],[413.0, 2, 'p', 9],[540.0, 70, '%', 12]

Ti
###Structure, magnetic and transport properties of Ti-substituted La0.7Sr0.3MnO3|M. S. Kim,J. B. Yang,Q. Cai,X. D. Zhou,W. J. James,W. B. Yelon,P. E. Parris,D. Buddhikot,S. K. Malik###
(1808854, 1808854)
 Ti-substituted perovskites, La0.7Sr0.3Mn1-xTixO3, with x<missing VAR> between 0 to 0.20,were investigated by neutron diffraction, magnetization, electric resistivity,and magnetoresistance (MR) measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 0, 'to', 0],[27.0, 0.2, ',', 0],[87.0, 10, 'K', 1],[141.0, 10, 'K', 3],[166.0, 0.1, ',', 3],[181.0, 0.1, ',', 3],[236.0, 0.15, ',', 4],[322.0, 0.05, 'samples', 5],[349.0, 0.1, 'samples', 6],[410.0, 2, 'p', 8],[537.0, 70, '%', 11]

La0.7Sr0.3Mn1-x
###Structure, magnetic and transport properties of Ti-substituted La0.7Sr0.3MnO3|M. S. Kim,J. B. Yang,Q. Cai,X. D. Zhou,W. J. James,W. B. Yelon,P. E. Parris,D. Buddhikot,S. K. Malik###
(1808861, 1808868)
 Ti-substituted perovskites, La0.7Sr0.3Mn1-xTixO3, with x<missing VAR> between 0 to 0.20,were investigated by neutron diffraction, magnetization, electric resistivity,and magnetoresistance (MR) measurements.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[11.0, 0, 'to', 0],[13.0, 0.2, ',', 0],[73.0, 10, 'K', 1],[127.0, 10, 'K', 3],[152.0, 0.1, ',', 3],[167.0, 0.1, ',', 3],[222.0, 0.15, ',', 4],[308.0, 0.05, 'samples', 5],[335.0, 0.1, 'samples', 6],[396.0, 2, 'p', 8],[523.0, 70, '%', 11]

O3
###Structure, magnetic and transport properties of Ti-substituted La0.7Sr0.3MnO3|M. S. Kim,J. B. Yang,Q. Cai,X. D. Zhou,W. J. James,W. B. Yelon,P. E. Parris,D. Buddhikot,S. K. Malik###
(1808870, 1808871)
 Ti-substituted perovskites, La0.7Sr0.3Mn1-xTixO3, with x<missing VAR> between 0 to 0.20,were investigated by neutron diffraction, magnetization, electric resistivity,and magnetoresistance (MR) measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 0, 'to', 0],[10.0, 0.2, ',', 0],[70.0, 10, 'K', 1],[124.0, 10, 'K', 3],[149.0, 0.1, ',', 3],[164.0, 0.1, ',', 3],[219.0, 0.15, ',', 4],[305.0, 0.05, 'samples', 5],[332.0, 0.1, 'samples', 6],[393.0, 2, 'p', 8],[520.0, 70, '%', 11]

At
###Structure, magnetic and transport properties of Ti-substituted La0.7Sr0.3MnO3|M. S. Kim,J. B. Yang,Q. Cai,X. D. Zhou,W. J. James,W. B. Yelon,P. E. Parris,D. Buddhikot,S. K. Malik###
(1808950, 1808950)
 At room temperature,the cell parameters a, c<missing VAR> and the unit cell volume increase with increasing Ticontent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 0, 'to', 2],[69.0, 0.2, ',', 2],[9.0, 10, 'K', 1],[45.0, 10, 'K', 1],[70.0, 0.1, ',', 1],[85.0, 0.1, ',', 1],[140.0, 0.15, ',', 2],[226.0, 0.05, 'samples', 3],[253.0, 0.1, 'samples', 4],[314.0, 2, 'p', 6],[441.0, 70, '%', 9]

Ti
###Structure, magnetic and transport properties of Ti-substituted La0.7Sr0.3MnO3|M. S. Kim,J. B. Yang,Q. Cai,X. D. Zhou,W. J. James,W. B. Yelon,P. E. Parris,D. Buddhikot,S. K. Malik###
(1808985, 1808985)
 At room temperature,the cell parameters a, c<missing VAR> and the unit cell volume increase with increasing Ticontent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 0, 'to', 2],[104.0, 0.2, ',', 2],[44.0, 10, 'K', 1],[10.0, 10, 'K', 1],[35.0, 0.1, ',', 1],[50.0, 0.1, ',', 1],[105.0, 0.15, ',', 2],[191.0, 0.05, 'samples', 3],[218.0, 0.1, 'samples', 4],[279.0, 2, 'p', 6],[406.0, 70, '%', 9]

Mn
###Structure, magnetic and transport properties of Ti-substituted La0.7Sr0.3MnO3|M. S. Kim,J. B. Yang,Q. Cai,X. D. Zhou,W. J. James,W. B. Yelon,P. E. Parris,D. Buddhikot,S. K. Malik###
(1809071, 1809071)
 The average (Mn,Ti)-O bond lengthincreases up to x<missing VAR>0.15, and the (Mn,Ti)-O-(Mn,Ti) bond angle decreases withincreasing Ti content to its minimum value at x<missing VAR>0.15 at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[192.0, 0, 'to', 4],[190.0, 0.2, ',', 4],[130.0, 10, 'K', 3],[76.0, 10, 'K', 1],[51.0, 0.1, ',', 1],[36.0, 0.1, ',', 1],[19.0, 0.15, ',', 0],[105.0, 0.05, 'samples', 1],[132.0, 0.1, 'samples', 2],[193.0, 2, 'p', 4],[320.0, 70, '%', 7]

Ti
###Structure, magnetic and transport properties of Ti-substituted La0.7Sr0.3MnO3|M. S. Kim,J. B. Yang,Q. Cai,X. D. Zhou,W. J. James,W. B. Yelon,P. E. Parris,D. Buddhikot,S. K. Malik###
(1809073, 1809073)
 The average (Mn,Ti)-O bond lengthincreases up to x<missing VAR>0.15, and the (Mn,Ti)-O-(Mn,Ti) bond angle decreases withincreasing Ti content to its minimum value at x<missing VAR>0.15 at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[194.0, 0, 'to', 4],[192.0, 0.2, ',', 4],[132.0, 10, 'K', 3],[78.0, 10, 'K', 1],[53.0, 0.1, ',', 1],[38.0, 0.1, ',', 1],[17.0, 0.15, ',', 0],[103.0, 0.05, 'samples', 1],[130.0, 0.1, 'samples', 2],[191.0, 2, 'p', 4],[318.0, 70, '%', 7]

O
###Structure, magnetic and transport properties of Ti-substituted La0.7Sr0.3MnO3|M. S. Kim,J. B. Yang,Q. Cai,X. D. Zhou,W. J. James,W. B. Yelon,P. E. Parris,D. Buddhikot,S. K. Malik###
(1809076, 1809076)
 The average (Mn,Ti)-O bond lengthincreases up to x<missing VAR>0.15, and the (Mn,Ti)-O-(Mn,Ti) bond angle decreases withincreasing Ti content to its minimum value at x<missing VAR>0.15 at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[197.0, 0, 'to', 4],[195.0, 0.2, ',', 4],[135.0, 10, 'K', 3],[81.0, 10, 'K', 1],[56.0, 0.1, ',', 1],[41.0, 0.1, ',', 1],[14.0, 0.15, ',', 0],[100.0, 0.05, 'samples', 1],[127.0, 0.1, 'samples', 2],[188.0, 2, 'p', 4],[315.0, 70, '%', 7]

Mn
###Structure, magnetic and transport properties of Ti-substituted La0.7Sr0.3MnO3|M. S. Kim,J. B. Yang,Q. Cai,X. D. Zhou,W. J. James,W. B. Yelon,P. E. Parris,D. Buddhikot,S. K. Malik###
(1809098, 1809098)
 The average (Mn,Ti)-O bond lengthincreases up to x<missing VAR>0.15, and the (Mn,Ti)-O-(Mn,Ti) bond angle decreases withincreasing Ti content to its minimum value at x<missing VAR>0.15 at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[219.0, 0, 'to', 4],[217.0, 0.2, ',', 4],[157.0, 10, 'K', 3],[103.0, 10, 'K', 1],[78.0, 0.1, ',', 1],[63.0, 0.1, ',', 1],[8.0, 0.15, ',', 0],[78.0, 0.05, 'samples', 1],[105.0, 0.1, 'samples', 2],[166.0, 2, 'p', 4],[293.0, 70, '%', 7]

Ti
###Structure, magnetic and transport properties of Ti-substituted La0.7Sr0.3MnO3|M. S. Kim,J. B. Yang,Q. Cai,X. D. Zhou,W. J. James,W. B. Yelon,P. E. Parris,D. Buddhikot,S. K. Malik###
(1809100, 1809100)
 The average (Mn,Ti)-O bond lengthincreases up to x<missing VAR>0.15, and the (Mn,Ti)-O-(Mn,Ti) bond angle decreases withincreasing Ti content to its minimum value at x<missing VAR>0.15 at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[221.0, 0, 'to', 4],[219.0, 0.2, ',', 4],[159.0, 10, 'K', 3],[105.0, 10, 'K', 1],[80.0, 0.1, ',', 1],[65.0, 0.1, ',', 1],[10.0, 0.15, ',', 0],[76.0, 0.05, 'samples', 1],[103.0, 0.1, 'samples', 2],[164.0, 2, 'p', 4],[291.0, 70, '%', 7]

O
###Structure, magnetic and transport properties of Ti-substituted La0.7Sr0.3MnO3|M. S. Kim,J. B. Yang,Q. Cai,X. D. Zhou,W. J. James,W. B. Yelon,P. E. Parris,D. Buddhikot,S. K. Malik###
(1809103, 1809103)
 The average (Mn,Ti)-O bond lengthincreases up to x<missing VAR>0.15, and the (Mn,Ti)-O-(Mn,Ti) bond angle decreases withincreasing Ti content to its minimum value at x<missing VAR>0.15 at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[224.0, 0, 'to', 4],[222.0, 0.2, ',', 4],[162.0, 10, 'K', 3],[108.0, 10, 'K', 1],[83.0, 0.1, ',', 1],[68.0, 0.1, ',', 1],[13.0, 0.15, ',', 0],[73.0, 0.05, 'samples', 1],[100.0, 0.1, 'samples', 2],[161.0, 2, 'p', 4],[288.0, 70, '%', 7]

Mn
###Structure, magnetic and transport properties of Ti-substituted La0.7Sr0.3MnO3|M. S. Kim,J. B. Yang,Q. Cai,X. D. Zhou,W. J. James,W. B. Yelon,P. E. Parris,D. Buddhikot,S. K. Malik###
(1809106, 1809106)
 The average (Mn,Ti)-O bond lengthincreases up to x<missing VAR>0.15, and the (Mn,Ti)-O-(Mn,Ti) bond angle decreases withincreasing Ti content to its minimum value at x<missing VAR>0.15 at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[227.0, 0, 'to', 4],[225.0, 0.2, ',', 4],[165.0, 10, 'K', 3],[111.0, 10, 'K', 1],[86.0, 0.1, ',', 1],[71.0, 0.1, ',', 1],[16.0, 0.15, ',', 0],[70.0, 0.05, 'samples', 1],[97.0, 0.1, 'samples', 2],[158.0, 2, 'p', 4],[285.0, 70, '%', 7]

Ti
###Structure, magnetic and transport properties of Ti-substituted La0.7Sr0.3MnO3|M. S. Kim,J. B. Yang,Q. Cai,X. D. Zhou,W. J. James,W. B. Yelon,P. E. Parris,D. Buddhikot,S. K. Malik###
(1809108, 1809108)
 The average (Mn,Ti)-O bond lengthincreases up to x<missing VAR>0.15, and the (Mn,Ti)-O-(Mn,Ti) bond angle decreases withincreasing Ti content to its minimum value at x<missing VAR>0.15 at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[229.0, 0, 'to', 4],[227.0, 0.2, ',', 4],[167.0, 10, 'K', 3],[113.0, 10, 'K', 1],[88.0, 0.1, ',', 1],[73.0, 0.1, ',', 1],[18.0, 0.15, ',', 0],[68.0, 0.05, 'samples', 1],[95.0, 0.1, 'samples', 2],[156.0, 2, 'p', 4],[283.0, 70, '%', 7]

Ti
###Structure, magnetic and transport properties of Ti-substituted La0.7Sr0.3MnO3|M. S. Kim,J. B. Yang,Q. Cai,X. D. Zhou,W. J. James,W. B. Yelon,P. E. Parris,D. Buddhikot,S. K. Malik###
(1809122, 1809122)
 The average (Mn,Ti)-O bond lengthincreases up to x<missing VAR>0.15, and the (Mn,Ti)-O-(Mn,Ti) bond angle decreases withincreasing Ti content to its minimum value at x<missing VAR>0.15 at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[243.0, 0, 'to', 4],[241.0, 0.2, ',', 4],[181.0, 10, 'K', 3],[127.0, 10, 'K', 1],[102.0, 0.1, ',', 1],[87.0, 0.1, ',', 1],[32.0, 0.15, ',', 0],[54.0, 0.05, 'samples', 1],[81.0, 0.1, 'samples', 2],[142.0, 2, 'p', 4],[269.0, 70, '%', 7]

C
###Structure, magnetic and transport properties of Ti-substituted La0.7Sr0.3MnO3|M. S. Kim,J. B. Yang,Q. Cai,X. D. Zhou,W. J. James,W. B. Yelon,P. E. Parris,D. Buddhikot,S. K. Malik###
(1809156, 1809156)
 Belowthe Curie temperature T<missing VAR>C, the resistance exhibits metallic behavior for the x<missing VAR> 0.05 samples.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[277.0, 0, 'to', 5],[275.0, 0.2, ',', 5],[215.0, 10, 'K', 4],[161.0, 10, 'K', 2],[136.0, 0.1, ',', 2],[121.0, 0.1, ',', 2],[66.0, 0.15, ',', 1],[20.0, 0.05, 'samples', 0],[47.0, 0.1, 'samples', 1],[108.0, 2, 'p', 3],[235.0, 70, '%', 6]

C
###Structure, magnetic and transport properties of Ti-substituted La0.7Sr0.3MnO3|M. S. Kim,J. B. Yang,Q. Cai,X. D. Zhou,W. J. James,W. B. Yelon,P. E. Parris,D. Buddhikot,S. K. Malik###
(1809219, 1809219)
 A peak in resistivity appears below T<missing VAR>C for all samples,and shifts to a lower temperature as x<missing VAR> increases.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[340.0, 0, 'to', 7],[338.0, 0.2, ',', 7],[278.0, 10, 'K', 6],[224.0, 10, 'K', 4],[199.0, 0.1, ',', 4],[184.0, 0.1, ',', 4],[129.0, 0.15, ',', 3],[43.0, 0.05, 'samples', 2],[16.0, 0.1, 'samples', 1],[45.0, 2, 'p', 1],[172.0, 70, '%', 4]

Mn
###Structure, magnetic and transport properties of Ti-substituted La0.7Sr0.3MnO3|M. S. Kim,J. B. Yang,Q. Cai,X. D. Zhou,W. J. James,W. B. Yelon,P. E. Parris,D. Buddhikot,S. K. Malik###
(1809254, 1809254)
 The substitution of Mn by Tidecreases the 2p-3d<missing VAR> hybridization between O and Mn ions, reduces the bandwidthW, and increases the electron-phonon coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[375.0, 0, 'to', 8],[373.0, 0.2, ',', 8],[313.0, 10, 'K', 7],[259.0, 10, 'K', 5],[234.0, 0.1, ',', 5],[219.0, 0.1, ',', 5],[164.0, 0.15, ',', 4],[78.0, 0.05, 'samples', 3],[51.0, 0.1, 'samples', 2],[10.0, 2, 'p', 0],[137.0, 70, '%', 3]

Ti
###Structure, magnetic and transport properties of Ti-substituted La0.7Sr0.3MnO3|M. S. Kim,J. B. Yang,Q. Cai,X. D. Zhou,W. J. James,W. B. Yelon,P. E. Parris,D. Buddhikot,S. K. Malik###
(1809258, 1809258)
 The substitution of Mn by Tidecreases the 2p-3d<missing VAR> hybridization between O and Mn ions, reduces the bandwidthW, and increases the electron-phonon coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[379.0, 0, 'to', 8],[377.0, 0.2, ',', 8],[317.0, 10, 'K', 7],[263.0, 10, 'K', 5],[238.0, 0.1, ',', 5],[223.0, 0.1, ',', 5],[168.0, 0.15, ',', 4],[82.0, 0.05, 'samples', 3],[55.0, 0.1, 'samples', 2],[6.0, 2, 'p', 0],[133.0, 70, '%', 3]

O
###Structure, magnetic and transport properties of Ti-substituted La0.7Sr0.3MnO3|M. S. Kim,J. B. Yang,Q. Cai,X. D. Zhou,W. J. James,W. B. Yelon,P. E. Parris,D. Buddhikot,S. K. Malik###
(1809273, 1809273)
 The substitution of Mn by Tidecreases the 2p-3d<missing VAR> hybridization between O and Mn ions, reduces the bandwidthW, and increases the electron-phonon coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[394.0, 0, 'to', 8],[392.0, 0.2, ',', 8],[332.0, 10, 'K', 7],[278.0, 10, 'K', 5],[253.0, 0.1, ',', 5],[238.0, 0.1, ',', 5],[183.0, 0.15, ',', 4],[97.0, 0.05, 'samples', 3],[70.0, 0.1, 'samples', 2],[9.0, 2, 'p', 0],[118.0, 70, '%', 3]

Mn
###Structure, magnetic and transport properties of Ti-substituted La0.7Sr0.3MnO3|M. S. Kim,J. B. Yang,Q. Cai,X. D. Zhou,W. J. James,W. B. Yelon,P. E. Parris,D. Buddhikot,S. K. Malik###
(1809277, 1809277)
 The substitution of Mn by Tidecreases the 2p-3d<missing VAR> hybridization between O and Mn ions, reduces the bandwidthW, and increases the electron-phonon coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[398.0, 0, 'to', 8],[396.0, 0.2, ',', 8],[336.0, 10, 'K', 7],[282.0, 10, 'K', 5],[257.0, 0.1, ',', 5],[242.0, 0.1, ',', 5],[187.0, 0.15, ',', 4],[101.0, 0.05, 'samples', 3],[74.0, 0.1, 'samples', 2],[13.0, 2, 'p', 0],[114.0, 70, '%', 3]

W
###Structure, magnetic and transport properties of Ti-substituted La0.7Sr0.3MnO3|M. S. Kim,J. B. Yang,Q. Cai,X. D. Zhou,W. J. James,W. B. Yelon,P. E. Parris,D. Buddhikot,S. K. Malik###
(1809289, 1809289)
 The substitution of Mn by Tidecreases the 2p-3d<missing VAR> hybridization between O and Mn ions, reduces the bandwidthW, and increases the electron-phonon coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[410.0, 0, 'to', 8],[408.0, 0.2, ',', 8],[348.0, 10, 'K', 7],[294.0, 10, 'K', 5],[269.0, 0.1, ',', 5],[254.0, 0.1, ',', 5],[199.0, 0.15, ',', 4],[113.0, 0.05, 'samples', 3],[86.0, 0.1, 'samples', 2],[25.0, 2, 'p', 0],[102.0, 70, '%', 3]

C
###Structure, magnetic and transport properties of Ti-substituted La0.7Sr0.3MnO3|M. S. Kim,J. B. Yang,Q. Cai,X. D. Zhou,W. J. James,W. B. Yelon,P. E. Parris,D. Buddhikot,S. K. Malik###
(1809311, 1809311)
 Therefore, the T<missing VAR>C shifts to alower temperature and the resistivity increases with increasing Ti content.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[432.0, 0, 'to', 9],[430.0, 0.2, ',', 9],[370.0, 10, 'K', 8],[316.0, 10, 'K', 6],[291.0, 0.1, ',', 6],[276.0, 0.1, ',', 6],[221.0, 0.15, ',', 5],[135.0, 0.05, 'samples', 4],[108.0, 0.1, 'samples', 3],[47.0, 2, 'p', 1],[80.0, 70, '%', 2]

Ti
###Structure, magnetic and transport properties of Ti-substituted La0.7Sr0.3MnO3|M. S. Kim,J. B. Yang,Q. Cai,X. D. Zhou,W. J. James,W. B. Yelon,P. E. Parris,D. Buddhikot,S. K. Malik###
(1809336, 1809336)
 Therefore, the T<missing VAR>C shifts to alower temperature and the resistivity increases with increasing Ti content.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[457.0, 0, 'to', 9],[455.0, 0.2, ',', 9],[395.0, 10, 'K', 8],[341.0, 10, 'K', 6],[316.0, 0.1, ',', 6],[301.0, 0.1, ',', 6],[246.0, 0.15, ',', 5],[160.0, 0.05, 'samples', 4],[133.0, 0.1, 'samples', 3],[72.0, 2, 'p', 1],[55.0, 70, '%', 2]

La0.7Sr0.3Mn0.8Ti0.2O3
###Structure, magnetic and transport properties of Ti-substituted La0.7Sr0.3MnO3|M. S. Kim,J. B. Yang,Q. Cai,X. D. Zhou,W. J. James,W. B. Yelon,P. E. Parris,D. Buddhikot,S. K. Malik###
(1809396, 1809405)
 The maximum MR effect is about 70% for La0.7Sr0.3Mn0.8Ti0.2O3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.04,0,0,0.16,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[517.0, 0, 'to', 11],[515.0, 0.2, ',', 11],[455.0, 10, 'K', 10],[401.0, 10, 'K', 8],[376.0, 0.1, ',', 8],[361.0, 0.1, ',', 8],[306.0, 0.15, ',', 7],[220.0, 0.05, 'samples', 6],[193.0, 0.1, 'samples', 5],[132.0, 2, 'p', 3],[5.0, 70, '%', 0]

C
###Structure, magnetic and transport properties of Ti-substituted La0.7Sr0.3MnO3|M. S. Kim,J. B. Yang,Q. Cai,X. D. Zhou,W. J. James,W. B. Yelon,P. E. Parris,D. Buddhikot,S. K. Malik###
(1809416, 1809416)
 Theseparation of T<missing VAR>C and the resistivity maximum temperature Tmax enhances the MReffect in these compounds due to the weak coupling between the magneticordering and the resistivity as compared with La0.7Sr0.3MnO3.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[537.0, 0, 'to', 12],[535.0, 0.2, ',', 12],[475.0, 10, 'K', 11],[421.0, 10, 'K', 9],[396.0, 0.1, ',', 9],[381.0, 0.1, ',', 9],[326.0, 0.15, ',', 8],[240.0, 0.05, 'samples', 7],[213.0, 0.1, 'samples', 6],[152.0, 2, 'p', 4],[25.0, 70, '%', 1]

La0.7Sr0.3MnO3
###Structure, magnetic and transport properties of Ti-substituted La0.7Sr0.3MnO3|M. S. Kim,J. B. Yang,Q. Cai,X. D. Zhou,W. J. James,W. B. Yelon,P. E. Parris,D. Buddhikot,S. K. Malik###
(1809477, 1809483)
 Theseparation of T<missing VAR>C and the resistivity maximum temperature Tmax enhances the MReffect in these compounds due to the weak coupling between the magneticordering and the resistivity as compared with La0.7Sr0.3MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[598.0, 0, 'to', 12],[596.0, 0.2, ',', 12],[536.0, 10, 'K', 11],[482.0, 10, 'K', 9],[457.0, 0.1, ',', 9],[442.0, 0.1, ',', 9],[387.0, 0.15, ',', 8],[301.0, 0.05, 'samples', 7],[274.0, 0.1, 'samples', 6],[213.0, 2, 'p', 4],[86.0, 70, '%', 1]

CeAgSb2
###Magnetic, electronic and Shubnikov-de Haas investigation of the dense Kondo system CeAgSb2|E. Jobiliong,J. S. Brooks,E. S. Choi,Han-Oh Lee,Z. Fisk###
(1809519, 1809522)
Magnetic, electronic and Shubnikov-de Haas investigation of the dense Kondo system CeAgSb2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0.5,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 9.8, 'K', 1],[440.0, 53, 'K', 7],[443.0, 137, 'K', 7],[479.0, 23, 'K', 8]

Ce
###Magnetic, electronic and Shubnikov-de Haas investigation of the dense Kondo system CeAgSb2|E. Jobiliong,J. S. Brooks,E. S. Choi,Han-Oh Lee,Z. Fisk###
(1809541, 1809541)
 Of the dense Kondo materials in the class CeT<missing VAR>Sb2 (where T<missing VAR>  Au, Ag, Ni, Cu,or Pd), CeAgSb2 is special due to its complex magnetic ground state, whichexhibits both ferro- and anti-ferromagnetic character below an orderingtemperature T<missing VAR>O  9.8 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 9.8, 'K', 0],[421.0, 53, 'K', 6],[424.0, 137, 'K', 6],[460.0, 23, 'K', 7]

Sb2
###Magnetic, electronic and Shubnikov-de Haas investigation of the dense Kondo system CeAgSb2|E. Jobiliong,J. S. Brooks,E. S. Choi,Han-Oh Lee,Z. Fisk###
(1809543, 1809544)
 Of the dense Kondo materials in the class CeT<missing VAR>Sb2 (where T<missing VAR>  Au, Ag, Ni, Cu,or Pd), CeAgSb2 is special due to its complex magnetic ground state, whichexhibits both ferro- and anti-ferromagnetic character below an orderingtemperature T<missing VAR>O  9.8 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 9.8, 'K', 0],[418.0, 53, 'K', 6],[421.0, 137, 'K', 6],[457.0, 23, 'K', 7]

Au
###Magnetic, electronic and Shubnikov-de Haas investigation of the dense Kondo system CeAgSb2|E. Jobiliong,J. S. Brooks,E. S. Choi,Han-Oh Lee,Z. Fisk###
(1809552, 1809552)
 Of the dense Kondo materials in the class CeT<missing VAR>Sb2 (where T<missing VAR>  Au, Ag, Ni, Cu,or Pd), CeAgSb2 is special due to its complex magnetic ground state, whichexhibits both ferro- and anti-ferromagnetic character below an orderingtemperature T<missing VAR>O  9.8 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 9.8, 'K', 0],[410.0, 53, 'K', 6],[413.0, 137, 'K', 6],[449.0, 23, 'K', 7]

Ag
###Magnetic, electronic and Shubnikov-de Haas investigation of the dense Kondo system CeAgSb2|E. Jobiliong,J. S. Brooks,E. S. Choi,Han-Oh Lee,Z. Fisk###
(1809555, 1809555)
 Of the dense Kondo materials in the class CeT<missing VAR>Sb2 (where T<missing VAR>  Au, Ag, Ni, Cu,or Pd), CeAgSb2 is special due to its complex magnetic ground state, whichexhibits both ferro- and anti-ferromagnetic character below an orderingtemperature T<missing VAR>O  9.8 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 9.8, 'K', 0],[407.0, 53, 'K', 6],[410.0, 137, 'K', 6],[446.0, 23, 'K', 7]

Ni
###Magnetic, electronic and Shubnikov-de Haas investigation of the dense Kondo system CeAgSb2|E. Jobiliong,J. S. Brooks,E. S. Choi,Han-Oh Lee,Z. Fisk###
(1809558, 1809558)
 Of the dense Kondo materials in the class CeT<missing VAR>Sb2 (where T<missing VAR>  Au, Ag, Ni, Cu,or Pd), CeAgSb2 is special due to its complex magnetic ground state, whichexhibits both ferro- and anti-ferromagnetic character below an orderingtemperature T<missing VAR>O  9.8 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 9.8, 'K', 0],[404.0, 53, 'K', 6],[407.0, 137, 'K', 6],[443.0, 23, 'K', 7]

Cu
###Magnetic, electronic and Shubnikov-de Haas investigation of the dense Kondo system CeAgSb2|E. Jobiliong,J. S. Brooks,E. S. Choi,Han-Oh Lee,Z. Fisk###
(1809561, 1809561)
 Of the dense Kondo materials in the class CeT<missing VAR>Sb2 (where T<missing VAR>  Au, Ag, Ni, Cu,or Pd), CeAgSb2 is special due to its complex magnetic ground state, whichexhibits both ferro- and anti-ferromagnetic character below an orderingtemperature T<missing VAR>O  9.8 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 9.8, 'K', 0],[401.0, 53, 'K', 6],[404.0, 137, 'K', 6],[440.0, 23, 'K', 7]

Pd
###Magnetic, electronic and Shubnikov-de Haas investigation of the dense Kondo system CeAgSb2|E. Jobiliong,J. S. Brooks,E. S. Choi,Han-Oh Lee,Z. Fisk###
(1809567, 1809567)
 Of the dense Kondo materials in the class CeT<missing VAR>Sb2 (where T<missing VAR>  Au, Ag, Ni, Cu,or Pd), CeAgSb2 is special due to its complex magnetic ground state, whichexhibits both ferro- and anti-ferromagnetic character below an orderingtemperature T<missing VAR>O  9.8 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 9.8, 'K', 0],[395.0, 53, 'K', 6],[398.0, 137, 'K', 6],[434.0, 23, 'K', 7]

CeAgSb2
###Magnetic, electronic and Shubnikov-de Haas investigation of the dense Kondo system CeAgSb2|E. Jobiliong,J. S. Brooks,E. S. Choi,Han-Oh Lee,Z. Fisk###
(1809571, 1809574)
 Of the dense Kondo materials in the class CeT<missing VAR>Sb2 (where T<missing VAR>  Au, Ag, Ni, Cu,or Pd), CeAgSb2 is special due to its complex magnetic ground state, whichexhibits both ferro- and anti-ferromagnetic character below an orderingtemperature T<missing VAR>O  9.8 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0.5,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 9.8, 'K', 0],[388.0, 53, 'K', 6],[391.0, 137, 'K', 6],[427.0, 23, 'K', 7]

O
###Magnetic, electronic and Shubnikov-de Haas investigation of the dense Kondo system CeAgSb2|E. Jobiliong,J. S. Brooks,E. S. Choi,Han-Oh Lee,Z. Fisk###
(1809623, 1809623)
 Of the dense Kondo materials in the class CeT<missing VAR>Sb2 (where T<missing VAR>  Au, Ag, Ni, Cu,or Pd), CeAgSb2 is special due to its complex magnetic ground state, whichexhibits both ferro- and anti-ferromagnetic character below an orderingtemperature T<missing VAR>O  9.8 K.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 9.8, 'K', 0],[339.0, 53, 'K', 6],[342.0, 137, 'K', 6],[378.0, 23, 'K', 7]

CeAgSb2
###Magnetic, electronic and Shubnikov-de Haas investigation of the dense Kondo system CeAgSb2|E. Jobiliong,J. S. Brooks,E. S. Choi,Han-Oh Lee,Z. Fisk###
(1809668, 1809671)
 To further elucidate a description this magnetic groundstate, we have carried out a systematic study of single crystalline CeAgSb2 bymagnetic, electrical magneto-transport, and Shubnikov-de Haas (SdH) studiesover a broad range of temperature and magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0.5,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 9.8, 'K', 1],[291.0, 53, 'K', 5],[294.0, 137, 'K', 5],[330.0, 23, 'K', 6]

H
###Magnetic, electronic and Shubnikov-de Haas investigation of the dense Kondo system CeAgSb2|E. Jobiliong,J. S. Brooks,E. S. Choi,Han-Oh Lee,Z. Fisk###
(1809696, 1809696)
 To further elucidate a description this magnetic groundstate, we have carried out a systematic study of single crystalline CeAgSb2 bymagnetic, electrical magneto-transport, and Shubnikov-de Haas (SdH) studiesover a broad range of temperature and magnetic field.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 9.8, 'K', 1],[266.0, 53, 'K', 5],[269.0, 137, 'K', 5],[305.0, 23, 'K', 6]

H
###Magnetic, electronic and Shubnikov-de Haas investigation of the dense Kondo system CeAgSb2|E. Jobiliong,J. S. Brooks,E. S. Choi,Han-Oh Lee,Z. Fisk###
(1809767, 1809767)
 Here, dependingon the orientation of the magnetic field H, either ferromagnetic orantiferromagnetic ordering occurs below T<missing VAR>O.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 9.8, 'K', 3],[195.0, 53, 'K', 3],[198.0, 137, 'K', 3],[234.0, 23, 'K', 4]

O
###Magnetic, electronic and Shubnikov-de Haas investigation of the dense Kondo system CeAgSb2|E. Jobiliong,J. S. Brooks,E. S. Choi,Han-Oh Lee,Z. Fisk###
(1809786, 1809786)
 Here, dependingon the orientation of the magnetic field H, either ferromagnetic orantiferromagnetic ordering occurs below T<missing VAR>O.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 9.8, 'K', 3],[176.0, 53, 'K', 3],[179.0, 137, 'K', 3],[215.0, 23, 'K', 4]

O
###Magnetic, electronic and Shubnikov-de Haas investigation of the dense Kondo system CeAgSb2|E. Jobiliong,J. S. Brooks,E. S. Choi,Han-Oh Lee,Z. Fisk###
(1809803, 1809803)
 The resistivity of this compoundbelow T<missing VAR>O does not follow a simple Fermi liquid behavior, but requires anadditional contribution from conduction electron scattering from bosonexcitations with an energy gap, D<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 9.8, 'K', 4],[159.0, 53, 'K', 2],[162.0, 137, 'K', 2],[198.0, 23, 'K', 3]

At
###Magnetic, electronic and Shubnikov-de Haas investigation of the dense Kondo system CeAgSb2|E. Jobiliong,J. S. Brooks,E. S. Choi,Han-Oh Lee,Z. Fisk###
(1809860, 1809860)
 At zero field the temperature dependentresistivity below T<missing VAR>O is most consistent with antiferromagnetic order, based onthe transport theory which includes magnon scattering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[235.0, 9.8, 'K', 5],[102.0, 53, 'K', 1],[105.0, 137, 'K', 1],[141.0, 23, 'K', 2]

O
###Magnetic, electronic and Shubnikov-de Haas investigation of the dense Kondo system CeAgSb2|E. Jobiliong,J. S. Brooks,E. S. Choi,Han-Oh Lee,Z. Fisk###
(1809878, 1809878)
 At zero field the temperature dependentresistivity below T<missing VAR>O is most consistent with antiferromagnetic order, based onthe transport theory which includes magnon scattering.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[253.0, 9.8, 'K', 5],[84.0, 53, 'K', 1],[87.0, 137, 'K', 1],[123.0, 23, 'K', 2]

K
###Magnetic, electronic and Shubnikov-de Haas investigation of the dense Kondo system CeAgSb2|E. Jobiliong,J. S. Brooks,E. S. Choi,Han-Oh Lee,Z. Fisk###
(1809999, 1809999)
 Although there is some uncertainty in the Kondo temperaturedetermination, we estimate T<missing VAR>K  23 K from our analysis.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[374.0, 9.8, 'K', 7],[37.0, 53, 'K', 1],[34.0, 137, 'K', 1],[2.0, 23, 'K', 0]

In
###Magnetic, electronic and Shubnikov-de Haas investigation of the dense Kondo system CeAgSb2|E. Jobiliong,J. S. Brooks,E. S. Choi,Han-Oh Lee,Z. Fisk###
(1810010, 1810010)
 In the Fermi surfacestudies, the measurements show very small Fermi surface sections, not predictedby band structure calculations, and the SdH amplitudes are very sensitive tofield direction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[385.0, 9.8, 'K', 8],[48.0, 53, 'K', 2],[45.0, 137, 'K', 2],[9.0, 23, 'K', 1]

H
###Magnetic, electronic and Shubnikov-de Haas investigation of the dense Kondo system CeAgSb2|E. Jobiliong,J. S. Brooks,E. S. Choi,Han-Oh Lee,Z. Fisk###
(1810058, 1810058)
 In the Fermi surfacestudies, the measurements show very small Fermi surface sections, not predictedby band structure calculations, and the SdH amplitudes are very sensitive tofield direction.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[433.0, 9.8, 'K', 8],[96.0, 53, 'K', 2],[93.0, 137, 'K', 2],[57.0, 23, 'K', 1]

H
###Magnetic, electronic and Shubnikov-de Haas investigation of the dense Kondo system CeAgSb2|E. Jobiliong,J. S. Brooks,E. S. Choi,Han-Oh Lee,Z. Fisk###
(1810104, 1810104)
 Only by considering lens orbits between the main Fermi surfacecylinders can the SdH results be reconciled with the Fermi surface topologypredicted from band structure.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[479.0, 9.8, 'K', 9],[142.0, 53, 'K', 3],[139.0, 137, 'K', 3],[103.0, 23, 'K', 2]

O
###Poly-MTO, {(CH_3)_{0.92} Re O_3}_\infty, a Conducting Two-Dimensional Organometallic Oxide|R. Miller,E. -W. Scheidt,G. Eickerling,C. Helbig,F. Mayr,R. Herrmann,W. Scherer,H. -A. Krug von Nidda,V. Eyert,P. Schwab###
(1810144, 1810144)
Poly-MTO, (CH3)0.92 Re O3infty, a Conducting Two-Dimensional Organometallic Oxide.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[303.0, 38, 'K', 5],[374.0, 2, 'K', 5],[617.0, 2, 'D', 8]

(CH3)0.92
###Poly-MTO, {(CH_3)_{0.92} Re O_3}_\infty, a Conducting Two-Dimensional Organometallic Oxide|R. Miller,E. -W. Scheidt,G. Eickerling,C. Helbig,F. Mayr,R. Herrmann,W. Scherer,H. -A. Krug von Nidda,V. Eyert,P. Schwab###
(1810147, 1810152)
Poly-MTO, (CH3)0.92 Re O3infty, a Conducting Two-Dimensional Organometallic Oxide.
Featurization successful!
0.75,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[295.0, 38, 'K', 5],[366.0, 2, 'K', 5],[609.0, 2, 'D', 8]

Re
###Poly-MTO, {(CH_3)_{0.92} Re O_3}_\infty, a Conducting Two-Dimensional Organometallic Oxide|R. Miller,E. -W. Scheidt,G. Eickerling,C. Helbig,F. Mayr,R. Herrmann,W. Scherer,H. -A. Krug von Nidda,V. Eyert,P. Schwab###
(1810154, 1810154)
Poly-MTO, (CH3)0.92 Re O3infty, a Conducting Two-Dimensional Organometallic Oxide.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[293.0, 38, 'K', 5],[364.0, 2, 'K', 5],[607.0, 2, 'D', 8]

O3
###Poly-MTO, {(CH_3)_{0.92} Re O_3}_\infty, a Conducting Two-Dimensional Organometallic Oxide|R. Miller,E. -W. Scheidt,G. Eickerling,C. Helbig,F. Mayr,R. Herrmann,W. Scherer,H. -A. Krug von Nidda,V. Eyert,P. Schwab###
(1810156, 1810157)
Poly-MTO, (CH3)0.92 Re O3infty, a Conducting Two-Dimensional Organometallic Oxide.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[290.0, 38, 'K', 5],[361.0, 2, 'K', 5],[604.0, 2, 'D', 8]

(CH3)0.92ReO3
###Poly-MTO, {(CH_3)_{0.92} Re O_3}_\infty, a Conducting Two-Dimensional Organometallic Oxide|R. Miller,E. -W. Scheidt,G. Eickerling,C. Helbig,F. Mayr,R. Herrmann,W. Scherer,H. -A. Krug von Nidda,V. Eyert,P. Schwab###
(1810179, 1810187)
 Polymeric methyltrioxorhenium, (CH3)0.92ReO3infty (poly-MTO),is the first member of a new class of organometallic hybrids which adopts thestructural pattern and physical properties of classical perovskites in twodimensions (2D).
Featurization terminated normally.
0.35937500000000006,0,0,0,0,0.11979166666666667,0,0.390625,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13020833333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[260.0, 38, 'K', 4],[331.0, 2, 'K', 4],[574.0, 2, 'D', 7]

O
###Poly-MTO, {(CH_3)_{0.92} Re O_3}_\infty, a Conducting Two-Dimensional Organometallic Oxide|R. Miller,E. -W. Scheidt,G. Eickerling,C. Helbig,F. Mayr,R. Herrmann,W. Scherer,H. -A. Krug von Nidda,V. Eyert,P. Schwab###
(1810195, 1810195)
 Polymeric methyltrioxorhenium, (CH3)0.92ReO3infty (poly-MTO),is the first member of a new class of organometallic hybrids which adopts thestructural pattern and physical properties of classical perovskites in twodimensions (2D).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[252.0, 38, 'K', 4],[323.0, 2, 'K', 4],[566.0, 2, 'D', 7]

O
###Poly-MTO, {(CH_3)_{0.92} Re O_3}_\infty, a Conducting Two-Dimensional Organometallic Oxide|R. Miller,E. -W. Scheidt,G. Eickerling,C. Helbig,F. Mayr,R. Herrmann,W. Scherer,H. -A. Krug von Nidda,V. Eyert,P. Schwab###
(1810276, 1810276)
 We demonstrate how the electronic structure of poly-MTO can betailored by intercalation of organic donor molecules, such astetrathiafulvalene (TTF) or bis-(ethylendithio)-tetrathiafulvalene (BEDT-TTF),and by the inorganic acceptor SbF3.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[171.0, 38, 'K', 3],[242.0, 2, 'K', 3],[485.0, 2, 'D', 6]

F
###Poly-MTO, {(CH_3)_{0.92} Re O_3}_\infty, a Conducting Two-Dimensional Organometallic Oxide|R. Miller,E. -W. Scheidt,G. Eickerling,C. Helbig,F. Mayr,R. Herrmann,W. Scherer,H. -A. Krug von Nidda,V. Eyert,P. Schwab###
(1810308, 1810308)
 We demonstrate how the electronic structure of poly-MTO can betailored by intercalation of organic donor molecules, such astetrathiafulvalene (TTF) or bis-(ethylendithio)-tetrathiafulvalene (BEDT-TTF),and by the inorganic acceptor SbF3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 38, 'K', 3],[210.0, 2, 'K', 3],[453.0, 2, 'D', 6]

B
###Poly-MTO, {(CH_3)_{0.92} Re O_3}_\infty, a Conducting Two-Dimensional Organometallic Oxide|R. Miller,E. -W. Scheidt,G. Eickerling,C. Helbig,F. Mayr,R. Herrmann,W. Scherer,H. -A. Krug von Nidda,V. Eyert,P. Schwab###
(1810322, 1810322)
 We demonstrate how the electronic structure of poly-MTO can betailored by intercalation of organic donor molecules, such astetrathiafulvalene (TTF) or bis-(ethylendithio)-tetrathiafulvalene (BEDT-TTF),and by the inorganic acceptor SbF3.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 38, 'K', 3],[196.0, 2, 'K', 3],[439.0, 2, 'D', 6]

F
###Poly-MTO, {(CH_3)_{0.92} Re O_3}_\infty, a Conducting Two-Dimensional Organometallic Oxide|R. Miller,E. -W. Scheidt,G. Eickerling,C. Helbig,F. Mayr,R. Herrmann,W. Scherer,H. -A. Krug von Nidda,V. Eyert,P. Schwab###
(1810329, 1810329)
 We demonstrate how the electronic structure of poly-MTO can betailored by intercalation of organic donor molecules, such astetrathiafulvalene (TTF) or bis-(ethylendithio)-tetrathiafulvalene (BEDT-TTF),and by the inorganic acceptor SbF3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 38, 'K', 3],[189.0, 2, 'K', 3],[432.0, 2, 'D', 6]

SbF3
###Poly-MTO, {(CH_3)_{0.92} Re O_3}_\infty, a Conducting Two-Dimensional Organometallic Oxide|R. Miller,E. -W. Scheidt,G. Eickerling,C. Helbig,F. Mayr,R. Herrmann,W. Scherer,H. -A. Krug von Nidda,V. Eyert,P. Schwab###
(1810344, 1810346)
 We demonstrate how the electronic structure of poly-MTO can betailored by intercalation of organic donor molecules, such astetrathiafulvalene (TTF) or bis-(ethylendithio)-tetrathiafulvalene (BEDT-TTF),and by the inorganic acceptor SbF3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 38, 'K', 3],[172.0, 2, 'K', 3],[415.0, 2, 'D', 6]

O
###Poly-MTO, {(CH_3)_{0.92} Re O_3}_\infty, a Conducting Two-Dimensional Organometallic Oxide|R. Miller,E. -W. Scheidt,G. Eickerling,C. Helbig,F. Mayr,R. Herrmann,W. Scherer,H. -A. Krug von Nidda,V. Eyert,P. Schwab###
(1810376, 1810376)
 Integration of donor molecules leads toa more insulating behavior of poly-MTO, whereas SbF3 insertion does notcause any significant change in the resistivity.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 38, 'K', 2],[142.0, 2, 'K', 2],[385.0, 2, 'D', 5]

SbF3
###Poly-MTO, {(CH_3)_{0.92} Re O_3}_\infty, a Conducting Two-Dimensional Organometallic Oxide|R. Miller,E. -W. Scheidt,G. Eickerling,C. Helbig,F. Mayr,R. Herrmann,W. Scherer,H. -A. Krug von Nidda,V. Eyert,P. Schwab###
(1810381, 1810383)
 Integration of donor molecules leads toa more insulating behavior of poly-MTO, whereas SbF3 insertion does notcause any significant change in the resistivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 38, 'K', 2],[135.0, 2, 'K', 2],[378.0, 2, 'D', 5]

O
###Poly-MTO, {(CH_3)_{0.92} Re O_3}_\infty, a Conducting Two-Dimensional Organometallic Oxide|R. Miller,E. -W. Scheidt,G. Eickerling,C. Helbig,F. Mayr,R. Herrmann,W. Scherer,H. -A. Krug von Nidda,V. Eyert,P. Schwab###
(1810422, 1810422)
 The resistivity data of purepoly-MTO is remarkably well described by a two-dimensional electron system.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 38, 'K', 1],[96.0, 2, 'K', 1],[339.0, 2, 'D', 4]

As
###Poly-MTO, {(CH_3)_{0.92} Re O_3}_\infty, a Conducting Two-Dimensional Organometallic Oxide|R. Miller,E. -W. Scheidt,G. Eickerling,C. Helbig,F. Mayr,R. Herrmann,W. Scherer,H. -A. Krug von Nidda,V. Eyert,P. Schwab###
(1810522, 1810522)
As an explanation we suggest a crossover from purely two-dimensionalcharge-carrier diffusion within the ReO2infty planes at hightemperatures to three-dimensional diffusion at low temperatures in adisorder-enhanced electron-electron interaction scenario (Altshuler-Aronovcorrection).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 38, 'K', 1],[4.0, 2, 'K', 1],[239.0, 2, 'D', 2]

ReO2
###Poly-MTO, {(CH_3)_{0.92} Re O_3}_\infty, a Conducting Two-Dimensional Organometallic Oxide|R. Miller,E. -W. Scheidt,G. Eickerling,C. Helbig,F. Mayr,R. Herrmann,W. Scherer,H. -A. Krug von Nidda,V. Eyert,P. Schwab###
(1810555, 1810557)
As an explanation we suggest a crossover from purely two-dimensionalcharge-carrier diffusion within the ReO2infty planes at hightemperatures to three-dimensional diffusion at low temperatures in adisorder-enhanced electron-electron interaction scenario (Altshuler-Aronovcorrection).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 38, 'K', 1],[37.0, 2, 'K', 1],[204.0, 2, 'D', 2]

Re
###Poly-MTO, {(CH_3)_{0.92} Re O_3}_\infty, a Conducting Two-Dimensional Organometallic Oxide|R. Miller,E. -W. Scheidt,G. Eickerling,C. Helbig,F. Mayr,R. Herrmann,W. Scherer,H. -A. Krug von Nidda,V. Eyert,P. Schwab###
(1810662, 1810662)
 Furthermore, a linear positive magnetoresistance was found in theinsulating regime, which is caused by spatial localization of itinerantelectrons at some of the Re atoms, which formally adopt a 5d<missing VAR>1 electronicconfiguration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[215.0, 38, 'K', 2],[144.0, 2, 'K', 2],[99.0, 2, 'D', 1]

I
###Poly-MTO, {(CH_3)_{0.92} Re O_3}_\infty, a Conducting Two-Dimensional Organometallic Oxide|R. Miller,E. -W. Scheidt,G. Eickerling,C. Helbig,F. Mayr,R. Herrmann,W. Scherer,H. -A. Krug von Nidda,V. Eyert,P. Schwab###
(1810692, 1810692)
 X<missing VAR>-ray diffraction, IR<missing VAR>- and ESR-studies, temperature dependentmagnetization and specific heat measurements in various magnetic fields suggestthat the electronic structure of poly-MTO can safely be approximated by apurely 2D conductor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[245.0, 38, 'K', 3],[174.0, 2, 'K', 3],[69.0, 2, 'D', 0]

O
###Poly-MTO, {(CH_3)_{0.92} Re O_3}_\infty, a Conducting Two-Dimensional Organometallic Oxide|R. Miller,E. -W. Scheidt,G. Eickerling,C. Helbig,F. Mayr,R. Herrmann,W. Scherer,H. -A. Krug von Nidda,V. Eyert,P. Schwab###
(1810745, 1810745)
 X<missing VAR>-ray diffraction, IR<missing VAR>- and ESR-studies, temperature dependentmagnetization and specific heat measurements in various magnetic fields suggestthat the electronic structure of poly-MTO can safely be approximated by apurely 2D conductor.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[298.0, 38, 'K', 3],[227.0, 2, 'K', 3],[16.0, 2, 'D', 0]

(La)1.4
###Oxygen content variation and cation doping dependence of (La)1.4(Sr1-yCay)1.6Mn2O7 (y = 0, 0.25, 0.5) bilayered manganites properties|Lorenzo Malavasi,Maria Cristina Mozzati,Cristina Tealdi,Carlo B. Azzoni,Giorgio Flor###
(1810790, 1810793)
Oxygen content variation and cation doping dependence of (La)1.4(Sr1-yCay)1.6Mn2O7 (y<missing VAR>  0, 0.25, 0.5) bilayered manganites properties.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 0, ',', 0],[21.0, 0.25, ',', 0],[81.0, 0, ',', 1],[83.0, 0.25, 'and', 1],[84.0, 0.5, 'are', 1],[343.0, 0.5, ',', 6]

Sr1-y
###Oxygen content variation and cation doping dependence of (La)1.4(Sr1-yCay)1.6Mn2O7 (y = 0, 0.25, 0.5) bilayered manganites properties|Lorenzo Malavasi,Maria Cristina Mozzati,Cristina Tealdi,Carlo B. Azzoni,Giorgio Flor###
(1810795, 1810798)
Oxygen content variation and cation doping dependence of (La)1.4(Sr1-yCay)1.6Mn2O7 (y<missing VAR>  0, 0.25, 0.5) bilayered manganites properties.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[13.0, 0, ',', 0],[16.0, 0.25, ',', 0],[76.0, 0, ',', 1],[78.0, 0.25, 'and', 1],[79.0, 0.5, 'are', 1],[338.0, 0.5, ',', 6]

Mn2O7
###Oxygen content variation and cation doping dependence of (La)1.4(Sr1-yCay)1.6Mn2O7 (y = 0, 0.25, 0.5) bilayered manganites properties|Lorenzo Malavasi,Maria Cristina Mozzati,Cristina Tealdi,Carlo B. Azzoni,Giorgio Flor###
(1810802, 1810805)
Oxygen content variation and cation doping dependence of (La)1.4(Sr1-yCay)1.6Mn2O7 (y<missing VAR>  0, 0.25, 0.5) bilayered manganites properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0.7777777777777778,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 0, ',', 0],[9.0, 0.25, ',', 0],[69.0, 0, ',', 1],[71.0, 0.25, 'and', 1],[72.0, 0.5, 'are', 1],[331.0, 0.5, ',', 6]

(La)1.4
###Oxygen content variation and cation doping dependence of (La)1.4(Sr1-yCay)1.6Mn2O7 (y = 0, 0.25, 0.5) bilayered manganites properties|Lorenzo Malavasi,Maria Cristina Mozzati,Cristina Tealdi,Carlo B. Azzoni,Giorgio Flor###
(1810850, 1810853)
 The results of the synthesis and characterization of the optimally doped(La)1.4(Sr1-yCay)1.6Mn2O7 solid solution with y<missing VAR>0, 0.25 and 0.5 are reported.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 0, ',', 1],[36.0, 0.25, ',', 1],[21.0, 0, ',', 0],[23.0, 0.25, 'and', 0],[24.0, 0.5, 'are', 0],[283.0, 0.5, ',', 5]

Sr1-y
###Oxygen content variation and cation doping dependence of (La)1.4(Sr1-yCay)1.6Mn2O7 (y = 0, 0.25, 0.5) bilayered manganites properties|Lorenzo Malavasi,Maria Cristina Mozzati,Cristina Tealdi,Carlo B. Azzoni,Giorgio Flor###
(1810855, 1810858)
 The results of the synthesis and characterization of the optimally doped(La)1.4(Sr1-yCay)1.6Mn2O7 solid solution with y<missing VAR>0, 0.25 and 0.5 are reported.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[44.0, 0, ',', 1],[41.0, 0.25, ',', 1],[16.0, 0, ',', 0],[18.0, 0.25, 'and', 0],[19.0, 0.5, 'are', 0],[278.0, 0.5, ',', 5]

Mn2O7
###Oxygen content variation and cation doping dependence of (La)1.4(Sr1-yCay)1.6Mn2O7 (y = 0, 0.25, 0.5) bilayered manganites properties|Lorenzo Malavasi,Maria Cristina Mozzati,Cristina Tealdi,Carlo B. Azzoni,Giorgio Flor###
(1810862, 1810865)
 The results of the synthesis and characterization of the optimally doped(La)1.4(Sr1-yCay)1.6Mn2O7 solid solution with y<missing VAR>0, 0.25 and 0.5 are reported.
Featurization terminated normally.
0,0,0,0,0,0,0,0.7777777777777778,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2222222222222222,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 0, ',', 1],[48.0, 0.25, ',', 1],[9.0, 0, ',', 0],[11.0, 0.25, 'and', 0],[12.0, 0.5, 'are', 0],[271.0, 0.5, ',', 5]

Sr
###Oxygen content variation and cation doping dependence of (La)1.4(Sr1-yCay)1.6Mn2O7 (y = 0, 0.25, 0.5) bilayered manganites properties|Lorenzo Malavasi,Maria Cristina Mozzati,Cristina Tealdi,Carlo B. Azzoni,Giorgio Flor###
(1810891, 1810891)
By progressively replacing the Sr with the smaller Ca, while keeping fixed thehole-concentration due to the divalent dopant, the size effect of the cationitself on the structural, transport and magnetic properties of the bilayeredmanganite has been analysed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 0, ',', 2],[77.0, 0.25, ',', 2],[17.0, 0, ',', 1],[15.0, 0.25, 'and', 1],[14.0, 0.5, 'are', 1],[245.0, 0.5, ',', 4]

Ca
###Oxygen content variation and cation doping dependence of (La)1.4(Sr1-yCay)1.6Mn2O7 (y = 0, 0.25, 0.5) bilayered manganites properties|Lorenzo Malavasi,Maria Cristina Mozzati,Cristina Tealdi,Carlo B. Azzoni,Giorgio Flor###
(1810899, 1810899)
By progressively replacing the Sr with the smaller Ca, while keeping fixed thehole-concentration due to the divalent dopant, the size effect of the cationitself on the structural, transport and magnetic properties of the bilayeredmanganite has been analysed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 0, ',', 2],[85.0, 0.25, ',', 2],[25.0, 0, ',', 1],[23.0, 0.25, 'and', 1],[22.0, 0.5, 'are', 1],[237.0, 0.5, ',', 4]

Mn
###Oxygen content variation and cation doping dependence of (La)1.4(Sr1-yCay)1.6Mn2O7 (y = 0, 0.25, 0.5) bilayered manganites properties|Lorenzo Malavasi,Maria Cristina Mozzati,Cristina Tealdi,Carlo B. Azzoni,Giorgio Flor###
(1811149, 1811149)
 Oxygen annealing of the solid solution, that showed a limitfor about y<missing VAR>0.5, induces an increase of the Mn average valence state and atransition of the crystal structure from tetragonal to orthorhombic while theargon annealing induces an oxygen under-stoichiometry and, in turn, a reductionof the Mn average valence state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[338.0, 0, ',', 6],[335.0, 0.25, ',', 6],[275.0, 0, ',', 5],[273.0, 0.25, 'and', 5],[272.0, 0.5, 'are', 5],[13.0, 0.5, ',', 0]

Mn
###Oxygen content variation and cation doping dependence of (La)1.4(Sr1-yCay)1.6Mn2O7 (y = 0, 0.25, 0.5) bilayered manganites properties|Lorenzo Malavasi,Maria Cristina Mozzati,Cristina Tealdi,Carlo B. Azzoni,Giorgio Flor###
(1811216, 1811216)
 Oxygen annealing of the solid solution, that showed a limitfor about y<missing VAR>0.5, induces an increase of the Mn average valence state and atransition of the crystal structure from tetragonal to orthorhombic while theargon annealing induces an oxygen under-stoichiometry and, in turn, a reductionof the Mn average valence state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[405.0, 0, ',', 6],[402.0, 0.25, ',', 6],[342.0, 0, ',', 5],[340.0, 0.25, 'and', 5],[339.0, 0.5, 'are', 5],[80.0, 0.5, ',', 0]

Ca
###Oxygen content variation and cation doping dependence of (La)1.4(Sr1-yCay)1.6Mn2O7 (y = 0, 0.25, 0.5) bilayered manganites properties|Lorenzo Malavasi,Maria Cristina Mozzati,Cristina Tealdi,Carlo B. Azzoni,Giorgio Flor###
(1811231, 1811231)
 Along with the Ca substitution, theJahn-Teller distortion of the MnO6 octahedra is reduced.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[420.0, 0, ',', 7],[417.0, 0.25, ',', 7],[357.0, 0, ',', 6],[355.0, 0.25, 'and', 6],[354.0, 0.5, 'are', 6],[95.0, 0.5, ',', 1]

MnO6
###Oxygen content variation and cation doping dependence of (La)1.4(Sr1-yCay)1.6Mn2O7 (y = 0, 0.25, 0.5) bilayered manganites properties|Lorenzo Malavasi,Maria Cristina Mozzati,Cristina Tealdi,Carlo B. Azzoni,Giorgio Flor###
(1811249, 1811251)
 Along with the Ca substitution, theJahn-Teller distortion of the MnO6 octahedra is reduced.
Featurization terminated normally.
0,0,0,0,0,0,0,0.8571428571428571,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[438.0, 0, ',', 7],[435.0, 0.25, ',', 7],[375.0, 0, ',', 6],[373.0, 0.25, 'and', 6],[372.0, 0.5, 'are', 6],[113.0, 0.5, ',', 1]

Ca
###Oxygen content variation and cation doping dependence of (La)1.4(Sr1-yCay)1.6Mn2O7 (y = 0, 0.25, 0.5) bilayered manganites properties|Lorenzo Malavasi,Maria Cristina Mozzati,Cristina Tealdi,Carlo B. Azzoni,Giorgio Flor###
(1811294, 1811294)
 This has been directlyconnected to a general enhancement of the transport properties induced by theCa-doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[483.0, 0, ',', 8],[480.0, 0.25, ',', 8],[420.0, 0, ',', 7],[418.0, 0.25, 'and', 7],[417.0, 0.5, 'are', 7],[158.0, 0.5, ',', 2]

C
###Oxygen content variation and cation doping dependence of (La)1.4(Sr1-yCay)1.6Mn2O7 (y = 0, 0.25, 0.5) bilayered manganites properties|Lorenzo Malavasi,Maria Cristina Mozzati,Cristina Tealdi,Carlo B. Azzoni,Giorgio Flor###
(1811347, 1811347)
Curie temperatures (T<missing VAR>C) reduce by increasing the Ca-doping.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[536.0, 0, ',', 10],[533.0, 0.25, ',', 10],[473.0, 0, ',', 9],[471.0, 0.25, 'and', 9],[470.0, 0.5, 'are', 9],[211.0, 0.5, ',', 4]

Ca
###Oxygen content variation and cation doping dependence of (La)1.4(Sr1-yCay)1.6Mn2O7 (y = 0, 0.25, 0.5) bilayered manganites properties|Lorenzo Malavasi,Maria Cristina Mozzati,Cristina Tealdi,Carlo B. Azzoni,Giorgio Flor###
(1811358, 1811358)
Curie temperatures (T<missing VAR>C) reduce by increasing the Ca-doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[547.0, 0, ',', 10],[544.0, 0.25, ',', 10],[484.0, 0, ',', 9],[482.0, 0.25, 'and', 9],[481.0, 0.5, 'are', 9],[222.0, 0.5, ',', 4]

C
###Oxygen content variation and cation doping dependence of (La)1.4(Sr1-yCay)1.6Mn2O7 (y = 0, 0.25, 0.5) bilayered manganites properties|Lorenzo Malavasi,Maria Cristina Mozzati,Cristina Tealdi,Carlo B. Azzoni,Giorgio Flor###
(1811368, 1811368)
 The lower T<missing VAR>C forall the annealed samples with respect to the as prepared ones are connectedto the strong influence on the magnetic interaction of the point defects due tothe oxygen content variation.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[557.0, 0, ',', 11],[554.0, 0.25, ',', 11],[494.0, 0, ',', 10],[492.0, 0.25, 'and', 10],[491.0, 0.5, 'are', 10],[232.0, 0.5, ',', 5]

In
###Spin-Diffusion Lengths in Metals and Alloys, and Spin-Flipping at Metal/Metal Interfaces: an Experimentalist's Critical Review|Jack Bass,William P. Pratt Jr###
(1811485, 1811485)
 In magnetoresistive (MR) studies of magnetic multilayers composed ofcombinations of ferromagnetic (F) and non-magnetic (N) metals, the magneticmoment (or related spin) of each conduction electron plays a crucial role,supplementary to that of its charge.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(F)
###Spin-Diffusion Lengths in Metals and Alloys, and Spin-Flipping at Metal/Metal Interfaces: an Experimentalist's Critical Review|Jack Bass,William P. Pratt Jr###
(1811513, 1811515)
 In magnetoresistive (MR) studies of magnetic multilayers composed ofcombinations of ferromagnetic (F) and non-magnetic (N) metals, the magneticmoment (or related spin) of each conduction electron plays a crucial role,supplementary to that of its charge.
Featurization successful!
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(N)
###Spin-Diffusion Lengths in Metals and Alloys, and Spin-Flipping at Metal/Metal Interfaces: an Experimentalist's Critical Review|Jack Bass,William P. Pratt Jr###
(1811523, 1811525)
 In magnetoresistive (MR) studies of magnetic multilayers composed ofcombinations of ferromagnetic (F) and non-magnetic (N) metals, the magneticmoment (or related spin) of each conduction electron plays a crucial role,supplementary to that of its charge.
Featurization successful!
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F/N
###Spin-Diffusion Lengths in Metals and Alloys, and Spin-Flipping at Metal/Metal Interfaces: an Experimentalist's Critical Review|Jack Bass,William P. Pratt Jr###
(1811706, 1811708)
 They can alsoflip at F/N or N1/N2 interfaces.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

N1/N2
###Spin-Diffusion Lengths in Metals and Alloys, and Spin-Flipping at Metal/Metal Interfaces: an Experimentalist's Critical Review|Jack Bass,William P. Pratt Jr###
(1811712, 1811716)
 They can alsoflip at F/N or N1/N2 interfaces.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

In
###Spin-Diffusion Lengths in Metals and Alloys, and Spin-Flipping at Metal/Metal Interfaces: an Experimentalist's Critical Review|Jack Bass,William P. Pratt Jr###
(1811721, 1811721)
 In this review we describe how to measure thelengths over which electron moments flip in pure metals and alloys, and theprobability of spin-flipping at metallic interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Spin-Diffusion Lengths in Metals and Alloys, and Spin-Flipping at Metal/Metal Interfaces: an Experimentalist's Critical Review|Jack Bass,William P. Pratt Jr###
(1811822, 1811822)
 Spin-flipping withinmetals is described by a spin-diffusion length,lM(sf), where the metal M<missing VAR>  For N.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Spin-Diffusion Lengths in Metals and Alloys, and Spin-Flipping at Metal/Metal Interfaces: an Experimentalist's Critical Review|Jack Bass,William P. Pratt Jr###
(1811827, 1811827)
 Spin-flipping withinmetals is described by a spin-diffusion length,lM(sf), where the metal M<missing VAR>  For N.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(CPP)
###Spin-Diffusion Lengths in Metals and Alloys, and Spin-Flipping at Metal/Metal Interfaces: an Experimentalist's Critical Review|Jack Bass,William P. Pratt Jr###
(1811857, 1811861)
 Spin-diffusion lengths are the characteristic lengths in thecurrent-perpendicular-to-plane (CPP) and lateral non-local (LNL) geometriesthat we focus upon in this review.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin-Diffusion Lengths in Metals and Alloys, and Spin-Flipping at Metal/Metal Interfaces: an Experimentalist's Critical Review|Jack Bass,William P. Pratt Jr###
(1811895, 1811895)
 In certain simple cases, l<missing VAR>N(sf) sets thedistance over which the CPP-MR and LNL-MR decrease as the N-layer thickness(CPP-MR) or N-film length (LNL) increases, and l<missing VAR>F(sf) does the same forincrease of the CPP-MR with increasing F-layer thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Spin-Diffusion Lengths in Metals and Alloys, and Spin-Flipping at Metal/Metal Interfaces: an Experimentalist's Critical Review|Jack Bass,William P. Pratt Jr###
(1811905, 1811905)
 In certain simple cases, l<missing VAR>N(sf) sets thedistance over which the CPP-MR and LNL-MR decrease as the N-layer thickness(CPP-MR) or N-film length (LNL) increases, and l<missing VAR>F(sf) does the same forincrease of the CPP-MR with increasing F-layer thickness.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CPP
###Spin-Diffusion Lengths in Metals and Alloys, and Spin-Flipping at Metal/Metal Interfaces: an Experimentalist's Critical Review|Jack Bass,William P. Pratt Jr###
(1811923, 1811925)
 In certain simple cases, l<missing VAR>N(sf) sets thedistance over which the CPP-MR and LNL-MR decrease as the N-layer thickness(CPP-MR) or N-film length (LNL) increases, and l<missing VAR>F(sf) does the same forincrease of the CPP-MR with increasing F-layer thickness.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Spin-Diffusion Lengths in Metals and Alloys, and Spin-Flipping at Metal/Metal Interfaces: an Experimentalist's Critical Review|Jack Bass,William P. Pratt Jr###
(1811945, 1811945)
 In certain simple cases, l<missing VAR>N(sf) sets thedistance over which the CPP-MR and LNL-MR decrease as the N-layer thickness(CPP-MR) or N-film length (LNL) increases, and l<missing VAR>F(sf) does the same forincrease of the CPP-MR with increasing F-layer thickness.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CPP
###Spin-Diffusion Lengths in Metals and Alloys, and Spin-Flipping at Metal/Metal Interfaces: an Experimentalist's Critical Review|Jack Bass,William P. Pratt Jr###
(1811953, 1811955)
 In certain simple cases, l<missing VAR>N(sf) sets thedistance over which the CPP-MR and LNL-MR decrease as the N-layer thickness(CPP-MR) or N-film length (LNL) increases, and l<missing VAR>F(sf) does the same forincrease of the CPP-MR with increasing F-layer thickness.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Spin-Diffusion Lengths in Metals and Alloys, and Spin-Flipping at Metal/Metal Interfaces: an Experimentalist's Critical Review|Jack Bass,William P. Pratt Jr###
(1811963, 1811963)
 In certain simple cases, l<missing VAR>N(sf) sets thedistance over which the CPP-MR and LNL-MR decrease as the N-layer thickness(CPP-MR) or N-film length (LNL) increases, and l<missing VAR>F(sf) does the same forincrease of the CPP-MR with increasing F-layer thickness.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Spin-Diffusion Lengths in Metals and Alloys, and Spin-Flipping at Metal/Metal Interfaces: an Experimentalist's Critical Review|Jack Bass,William P. Pratt Jr###
(1811981, 1811981)
 In certain simple cases, l<missing VAR>N(sf) sets thedistance over which the CPP-MR and LNL-MR decrease as the N-layer thickness(CPP-MR) or N-film length (LNL) increases, and l<missing VAR>F(sf) does the same forincrease of the CPP-MR with increasing F-layer thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CPP
###Spin-Diffusion Lengths in Metals and Alloys, and Spin-Flipping at Metal/Metal Interfaces: an Experimentalist's Critical Review|Jack Bass,William P. Pratt Jr###
(1812001, 1812003)
 In certain simple cases, l<missing VAR>N(sf) sets thedistance over which the CPP-MR and LNL-MR decrease as the N-layer thickness(CPP-MR) or N-film length (LNL) increases, and l<missing VAR>F(sf) does the same forincrease of the CPP-MR with increasing F-layer thickness.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Spin-Diffusion Lengths in Metals and Alloys, and Spin-Flipping at Metal/Metal Interfaces: an Experimentalist's Critical Review|Jack Bass,William P. Pratt Jr###
(1812012, 1812012)
 In certain simple cases, l<missing VAR>N(sf) sets thedistance over which the CPP-MR and LNL-MR decrease as the N-layer thickness(CPP-MR) or N-film length (LNL) increases, and l<missing VAR>F(sf) does the same forincrease of the CPP-MR with increasing F-layer thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Spin-Diffusion Lengths in Metals and Alloys, and Spin-Flipping at Metal/Metal Interfaces: an Experimentalist's Critical Review|Jack Bass,William P. Pratt Jr###
(1812071, 1812071)
 Spin-flipping atM<missing VAR>1/M<missing VAR>2 interfaces can be described by a parameter, delta(M<missing VAR>1/M<missing VAR>2), whichdetermines the spin-flipping probability, P  1 - exp(-delta).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni/Au/Ni
###Probing Spin Accumulation in Ni/Au/Ni Single-Electron Transistors with Efficient Spin Injection and Detection Electrodes|R. S. Liu,H. Pettersson,L. Michalak,C. M. Canali,L. Samuelson###
(1812153, 1812157)
Probing Spin Accumulation in Ni/Au/Ni Single-Electron Transistors with Efficient Spin Injection and Detection Electrodes.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[128.0, 30, 'nm', 3],[161.0, 30, 'nm', 4],[304.0, 25, 'nm', 7],[382.0, 1.7, 'K', 9],[626.0, 10, '%', 12],[649.0, 22, '%', 12]

Ni/Au/Ni
###Probing Spin Accumulation in Ni/Au/Ni Single-Electron Transistors with Efficient Spin Injection and Detection Electrodes|R. S. Liu,H. Pettersson,L. Michalak,C. M. Canali,L. Samuelson###
(1812192, 1812196)
 We have investigated spin accumulation in Ni/Au/Ni single-electrontransistors assembled by atomic force microscopy.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[89.0, 30, 'nm', 2],[122.0, 30, 'nm', 3],[265.0, 25, 'nm', 6],[343.0, 1.7, 'K', 8],[587.0, 10, '%', 11],[610.0, 22, '%', 11]

Au
###Probing Spin Accumulation in Ni/Au/Ni Single-Electron Transistors with Efficient Spin Injection and Detection Electrodes|R. S. Liu,H. Pettersson,L. Michalak,C. M. Canali,L. Samuelson###
(1812270, 1812270)
 A grid of Au discs, 30nm in diameter and 30 nm thick, is prepared on a SiO2 surface by conventionale<missing VAR>-beam writing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 30, 'nm', 0],[48.0, 30, 'nm', 1],[191.0, 25, 'nm', 4],[269.0, 1.7, 'K', 6],[513.0, 10, '%', 9],[536.0, 22, '%', 9]

SiO2
###Probing Spin Accumulation in Ni/Au/Ni Single-Electron Transistors with Efficient Spin Injection and Detection Electrodes|R. S. Liu,H. Pettersson,L. Michalak,C. M. Canali,L. Samuelson###
(1812298, 1812300)
 A grid of Au discs, 30nm in diameter and 30 nm thick, is prepared on a SiO2 surface by conventionale<missing VAR>-beam writing.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 30, 'nm', 0],[18.0, 30, 'nm', 1],[161.0, 25, 'nm', 4],[239.0, 1.7, 'K', 6],[483.0, 10, '%', 9],[506.0, 22, '%', 9]

Ni
###Probing Spin Accumulation in Ni/Au/Ni Single-Electron Transistors with Efficient Spin Injection and Detection Electrodes|R. S. Liu,H. Pettersson,L. Michalak,C. M. Canali,L. Samuelson###
(1812324, 1812324)
 Subsequently, 30 nm thick ferromagnetic Ni source, drain andside-gate electrodes are formed in similar process steps.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 30, 'nm', 1],[6.0, 30, 'nm', 0],[137.0, 25, 'nm', 3],[215.0, 1.7, 'K', 5],[459.0, 10, '%', 8],[482.0, 22, '%', 8]

NiO
###Probing Spin Accumulation in Ni/Au/Ni Single-Electron Transistors with Efficient Spin Injection and Detection Electrodes|R. S. Liu,H. Pettersson,L. Michalak,C. M. Canali,L. Samuelson###
(1812398, 1812399)
 Tunnel barriers of NiO are realized by sequential Ar and O2plasma treatment.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 30, 'nm', 3],[80.0, 30, 'nm', 2],[62.0, 25, 'nm', 1],[140.0, 1.7, 'K', 3],[384.0, 10, '%', 6],[407.0, 22, '%', 6]

Ar
###Probing Spin Accumulation in Ni/Au/Ni Single-Electron Transistors with Efficient Spin Injection and Detection Electrodes|R. S. Liu,H. Pettersson,L. Michalak,C. M. Canali,L. Samuelson###
(1812409, 1812409)
 Tunnel barriers of NiO are realized by sequential Ar and O2plasma treatment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 30, 'nm', 3],[91.0, 30, 'nm', 2],[52.0, 25, 'nm', 1],[130.0, 1.7, 'K', 3],[374.0, 10, '%', 6],[397.0, 22, '%', 6]

O2
###Probing Spin Accumulation in Ni/Au/Ni Single-Electron Transistors with Efficient Spin Injection and Detection Electrodes|R. S. Liu,H. Pettersson,L. Michalak,C. M. Canali,L. Samuelson###
(1812413, 1812414)
 Tunnel barriers of NiO are realized by sequential Ar and O2plasma treatment.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 30, 'nm', 3],[95.0, 30, 'nm', 2],[47.0, 25, 'nm', 1],[125.0, 1.7, 'K', 3],[369.0, 10, '%', 6],[392.0, 22, '%', 6]

Au
###Probing Spin Accumulation in Ni/Au/Ni Single-Electron Transistors with Efficient Spin Injection and Detection Electrodes|R. S. Liu,H. Pettersson,L. Michalak,C. M. Canali,L. Samuelson###
(1812450, 1812450)
 Using an atomic force microscope with specially designedsoftware, a single non-magnetic Au nanodisc is positioned into the 25 nm gapbetween the source and drain electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 30, 'nm', 4],[132.0, 30, 'nm', 3],[11.0, 25, 'nm', 0],[89.0, 1.7, 'K', 2],[333.0, 10, '%', 5],[356.0, 22, '%', 5]

Au
###Probing Spin Accumulation in Ni/Au/Ni Single-Electron Transistors with Efficient Spin Injection and Detection Electrodes|R. S. Liu,H. Pettersson,L. Michalak,C. M. Canali,L. Samuelson###
(1812504, 1812504)
 The resistance of the device ismonitored in real-time while the Au disc is manipulated step-by-step withAngstrom-level precision.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[219.0, 30, 'nm', 5],[186.0, 30, 'nm', 4],[43.0, 25, 'nm', 1],[35.0, 1.7, 'K', 1],[279.0, 10, '%', 4],[302.0, 22, '%', 4]

Au
###Probing Spin Accumulation in Ni/Au/Ni Single-Electron Transistors with Efficient Spin Injection and Detection Electrodes|R. S. Liu,H. Pettersson,L. Michalak,C. M. Canali,L. Samuelson###
(1812580, 1812580)
 Transport measurements in magnetic field at 1.7 Kreveal no clear spin accumulation in the device, which can be attributed tofast spin relaxation in the Au disc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[295.0, 30, 'nm', 6],[262.0, 30, 'nm', 5],[119.0, 25, 'nm', 2],[41.0, 1.7, 'K', 0],[203.0, 10, '%', 3],[226.0, 22, '%', 3]

Au
###Probing Spin Accumulation in Ni/Au/Ni Single-Electron Transistors with Efficient Spin Injection and Detection Electrodes|R. S. Liu,H. Pettersson,L. Michalak,C. M. Canali,L. Samuelson###
(1812652, 1812652)
 From numerical simulations using therate-equation approach of orthodox Coulomb blockade theory, we can put an upperbound of a few ns on the spin-relaxation time for electrons in the Au disc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[367.0, 30, 'nm', 7],[334.0, 30, 'nm', 6],[191.0, 25, 'nm', 3],[113.0, 1.7, 'K', 1],[131.0, 10, '%', 2],[154.0, 22, '%', 2]

Ni
###Probing Spin Accumulation in Ni/Au/Ni Single-Electron Transistors with Efficient Spin Injection and Detection Electrodes|R. S. Liu,H. Pettersson,L. Michalak,C. M. Canali,L. Samuelson###
(1812683, 1812683)
 Toconfirm the magnetic switching characteristics and spin injection efficiency ofthe Ni electrodes, we fabricated a test structure consisting of a Ni/NiO/Nimagnetic tunnel junction with asymmetric dimensions of the electrodes similarto those of the SE<missing VAR>Ts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[398.0, 30, 'nm', 8],[365.0, 30, 'nm', 7],[222.0, 25, 'nm', 4],[144.0, 1.7, 'K', 2],[100.0, 10, '%', 1],[123.0, 22, '%', 1]

Ni/NiO/Ni
###Probing Spin Accumulation in Ni/Au/Ni Single-Electron Transistors with Efficient Spin Injection and Detection Electrodes|R. S. Liu,H. Pettersson,L. Michalak,C. M. Canali,L. Samuelson###
(1812704, 1812709)
 Toconfirm the magnetic switching characteristics and spin injection efficiency ofthe Ni electrodes, we fabricated a test structure consisting of a Ni/NiO/Nimagnetic tunnel junction with asymmetric dimensions of the electrodes similarto those of the SE<missing VAR>Ts.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[419.0, 30, 'nm', 8],[386.0, 30, 'nm', 7],[243.0, 25, 'nm', 4],[165.0, 1.7, 'K', 2],[74.0, 10, '%', 1],[97.0, 22, '%', 1]

S
###Probing Spin Accumulation in Ni/Au/Ni Single-Electron Transistors with Efficient Spin Injection and Detection Electrodes|R. S. Liu,H. Pettersson,L. Michalak,C. M. Canali,L. Samuelson###
(1812741, 1812741)
 Toconfirm the magnetic switching characteristics and spin injection efficiency ofthe Ni electrodes, we fabricated a test structure consisting of a Ni/NiO/Nimagnetic tunnel junction with asymmetric dimensions of the electrodes similarto those of the SE<missing VAR>Ts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[456.0, 30, 'nm', 8],[423.0, 30, 'nm', 7],[280.0, 25, 'nm', 4],[202.0, 1.7, 'K', 2],[42.0, 10, '%', 1],[65.0, 22, '%', 1]

Ni
###Probing Spin Accumulation in Ni/Au/Ni Single-Electron Transistors with Efficient Spin Injection and Detection Electrodes|R. S. Liu,H. Pettersson,L. Michalak,C. M. Canali,L. Samuelson###
(1812813, 1812813)
 Magnetoresistance measurements on the test deviceexhibited clear signs of magnetic reversal and a maximum TMR of 10%, from whichwe deduced a spin-polarization of about 22% in the Ni electrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[528.0, 30, 'nm', 9],[495.0, 30, 'nm', 8],[352.0, 25, 'nm', 5],[274.0, 1.7, 'K', 3],[30.0, 10, '%', 0],[7.0, 22, '%', 0]

B
###Synergy of exchange bias with superconductivity in ferromagnetic-superconducting layered hybrids: the influence of in-plane and out-of-plane magnetic order on superconductivity|D. Stamopoulos,E. Manios,M. Pissas###
(1812938, 1812938)
 B 75, 014501 (2007)] and extensivelystudied in this work under specific circumstances these phenomena instead ofbeing detrimental to each other may even become cooperative so that theirsynergy may promote the superconducting properties of a hybrid structure.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 75, ',', 0],[356.0, 75, ',', 9]

F
###Synergy of exchange bias with superconductivity in ferromagnetic-superconducting layered hybrids: the influence of in-plane and out-of-plane magnetic order on superconductivity|D. Stamopoulos,E. Manios,M. Pissas###
(1813070, 1813070)
  Here, we have studied systematically the magnetic and transport behavior ofsuch exchange biased hybrids that are comprised of ferromagnetic (FM) Ni80Fe20and low-Tc superconducting (SC) Nb for the case where the magnetic field isapplied parallel to the specimens.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[130.0, 75, ',', 1],[224.0, 75, ',', 8]

Ni80Fe20
###Synergy of exchange bias with superconductivity in ferromagnetic-superconducting layered hybrids: the influence of in-plane and out-of-plane magnetic order on superconductivity|D. Stamopoulos,E. Manios,M. Pissas###
(1813074, 1813077)
  Here, we have studied systematically the magnetic and transport behavior ofsuch exchange biased hybrids that are comprised of ferromagnetic (FM) Ni80Fe20and low-Tc superconducting (SC) Nb for the case where the magnetic field isapplied parallel to the specimens.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 75, ',', 1],[217.0, 75, ',', 8]

Tc
###Synergy of exchange bias with superconductivity in ferromagnetic-superconducting layered hybrids: the influence of in-plane and out-of-plane magnetic order on superconductivity|D. Stamopoulos,E. Manios,M. Pissas###
(1813084, 1813084)
  Here, we have studied systematically the magnetic and transport behavior ofsuch exchange biased hybrids that are comprised of ferromagnetic (FM) Ni80Fe20and low-Tc superconducting (SC) Nb for the case where the magnetic field isapplied parallel to the specimens.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 75, ',', 1],[210.0, 75, ',', 8]

(SC)
###Synergy of exchange bias with superconductivity in ferromagnetic-superconducting layered hybrids: the influence of in-plane and out-of-plane magnetic order on superconductivity|D. Stamopoulos,E. Manios,M. Pissas###
(1813088, 1813091)
  Here, we have studied systematically the magnetic and transport behavior ofsuch exchange biased hybrids that are comprised of ferromagnetic (FM) Ni80Fe20and low-Tc superconducting (SC) Nb for the case where the magnetic field isapplied parallel to the specimens.
Featurization successful!
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 75, ',', 1],[203.0, 75, ',', 8]

Nb
###Synergy of exchange bias with superconductivity in ferromagnetic-superconducting layered hybrids: the influence of in-plane and out-of-plane magnetic order on superconductivity|D. Stamopoulos,E. Manios,M. Pissas###
(1813093, 1813093)
  Here, we have studied systematically the magnetic and transport behavior ofsuch exchange biased hybrids that are comprised of ferromagnetic (FM) Ni80Fe20and low-Tc superconducting (SC) Nb for the case where the magnetic field isapplied parallel to the specimens.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 75, ',', 1],[201.0, 75, ',', 8]

F
###Synergy of exchange bias with superconductivity in ferromagnetic-superconducting layered hybrids: the influence of in-plane and out-of-plane magnetic order on superconductivity|D. Stamopoulos,E. Manios,M. Pissas###
(1813133, 1813133)
 Two structures have been studied FM<missing VAR>-SC-FM<missing VAR>trilayers (T<missing VAR>Ls) and FM<missing VAR>-SC bilayers (BLs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[193.0, 75, ',', 2],[161.0, 75, ',', 7]

SC
###Synergy of exchange bias with superconductivity in ferromagnetic-superconducting layered hybrids: the influence of in-plane and out-of-plane magnetic order on superconductivity|D. Stamopoulos,E. Manios,M. Pissas###
(1813136, 1813137)
 Two structures have been studied FM<missing VAR>-SC-FM<missing VAR>trilayers (T<missing VAR>Ls) and FM<missing VAR>-SC bilayers (BLs).
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[196.0, 75, ',', 2],[157.0, 75, ',', 7]

F
###Synergy of exchange bias with superconductivity in ferromagnetic-superconducting layered hybrids: the influence of in-plane and out-of-plane magnetic order on superconductivity|D. Stamopoulos,E. Manios,M. Pissas###
(1813139, 1813139)
 Two structures have been studied FM<missing VAR>-SC-FM<missing VAR>trilayers (T<missing VAR>Ls) and FM<missing VAR>-SC bilayers (BLs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[199.0, 75, ',', 2],[155.0, 75, ',', 7]

F
###Synergy of exchange bias with superconductivity in ferromagnetic-superconducting layered hybrids: the influence of in-plane and out-of-plane magnetic order on superconductivity|D. Stamopoulos,E. Manios,M. Pissas###
(1813152, 1813152)
 Two structures have been studied FM<missing VAR>-SC-FM<missing VAR>trilayers (T<missing VAR>Ls) and FM<missing VAR>-SC bilayers (BLs).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[212.0, 75, ',', 2],[142.0, 75, ',', 7]

SC
###Synergy of exchange bias with superconductivity in ferromagnetic-superconducting layered hybrids: the influence of in-plane and out-of-plane magnetic order on superconductivity|D. Stamopoulos,E. Manios,M. Pissas###
(1813155, 1813156)
 Two structures have been studied FM<missing VAR>-SC-FM<missing VAR>trilayers (T<missing VAR>Ls) and FM<missing VAR>-SC bilayers (BLs).
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[215.0, 75, ',', 2],[138.0, 75, ',', 7]

B
###Synergy of exchange bias with superconductivity in ferromagnetic-superconducting layered hybrids: the influence of in-plane and out-of-plane magnetic order on superconductivity|D. Stamopoulos,E. Manios,M. Pissas###
(1813161, 1813161)
 Two structures have been studied FM<missing VAR>-SC-FM<missing VAR>trilayers (T<missing VAR>Ls) and FM<missing VAR>-SC bilayers (BLs).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[221.0, 75, ',', 2],[133.0, 75, ',', 7]

I
###Synergy of exchange bias with superconductivity in ferromagnetic-superconducting layered hybrids: the influence of in-plane and out-of-plane magnetic order on superconductivity|D. Stamopoulos,E. Manios,M. Pissas###
(1813226, 1813226)
 These data are compared to systematictransport measurements including I-V characteristics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[286.0, 75, ',', 4],[68.0, 75, ',', 5]

V
###Synergy of exchange bias with superconductivity in ferromagnetic-superconducting layered hybrids: the influence of in-plane and out-of-plane magnetic order on superconductivity|D. Stamopoulos,E. Manios,M. Pissas###
(1813228, 1813228)
 These data are compared to systematictransport measurements including I-V characteristics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[288.0, 75, ',', 4],[66.0, 75, ',', 5]

B
###Synergy of exchange bias with superconductivity in ferromagnetic-superconducting layered hybrids: the influence of in-plane and out-of-plane magnetic order on superconductivity|D. Stamopoulos,E. Manios,M. Pissas###
(1813246, 1813246)
 The comparison of theexchange biased BLs and T<missing VAR>Ls that are studied here with the plain ones studiedin D<missing VAR>.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[306.0, 75, ',', 5],[48.0, 75, ',', 4]

B
###Synergy of exchange bias with superconductivity in ferromagnetic-superconducting layered hybrids: the influence of in-plane and out-of-plane magnetic order on superconductivity|D. Stamopoulos,E. Manios,M. Pissas###
(1813292, 1813292)
 B 75, 184504 (2007)] enable us to revealan underlying parameter that may falsify the interpretation of the transportproperties of relevant FM<missing VAR>-SC-FM TLs and FM<missing VAR>-SC BLs investigated in the recentliterature the underlying mechanism motivating the extreme magnetoresistancepeaks in the T<missing VAR>Ls relates to the suppression of superconductivity mainly due tothe magnetic coupling of the two FM<missing VAR> layers as the out-of-plane rotation oftheir magnetizations takes place across the coercive field where stray fieldsemerge in their whole surface owing to the multidomain magnetic state that theyacquire.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[352.0, 75, ',', 9],[2.0, 75, ',', 0]

F
###Synergy of exchange bias with superconductivity in ferromagnetic-superconducting layered hybrids: the influence of in-plane and out-of-plane magnetic order on superconductivity|D. Stamopoulos,E. Manios,M. Pissas###
(1813342, 1813342)
 B 75, 184504 (2007)] enable us to revealan underlying parameter that may falsify the interpretation of the transportproperties of relevant FM<missing VAR>-SC-FM TLs and FM<missing VAR>-SC BLs investigated in the recentliterature the underlying mechanism motivating the extreme magnetoresistancepeaks in the T<missing VAR>Ls relates to the suppression of superconductivity mainly due tothe magnetic coupling of the two FM<missing VAR> layers as the out-of-plane rotation oftheir magnetizations takes place across the coercive field where stray fieldsemerge in their whole surface owing to the multidomain magnetic state that theyacquire.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[402.0, 75, ',', 9],[48.0, 75, ',', 0]

SC
###Synergy of exchange bias with superconductivity in ferromagnetic-superconducting layered hybrids: the influence of in-plane and out-of-plane magnetic order on superconductivity|D. Stamopoulos,E. Manios,M. Pissas###
(1813345, 1813346)
 B 75, 184504 (2007)] enable us to revealan underlying parameter that may falsify the interpretation of the transportproperties of relevant FM<missing VAR>-SC-FM TLs and FM<missing VAR>-SC BLs investigated in the recentliterature the underlying mechanism motivating the extreme magnetoresistancepeaks in the T<missing VAR>Ls relates to the suppression of superconductivity mainly due tothe magnetic coupling of the two FM<missing VAR> layers as the out-of-plane rotation oftheir magnetizations takes place across the coercive field where stray fieldsemerge in their whole surface owing to the multidomain magnetic state that theyacquire.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[405.0, 75, ',', 9],[51.0, 75, ',', 0]

F
###Synergy of exchange bias with superconductivity in ferromagnetic-superconducting layered hybrids: the influence of in-plane and out-of-plane magnetic order on superconductivity|D. Stamopoulos,E. Manios,M. Pissas###
(1813348, 1813348)
 B 75, 184504 (2007)] enable us to revealan underlying parameter that may falsify the interpretation of the transportproperties of relevant FM<missing VAR>-SC-FM TLs and FM<missing VAR>-SC BLs investigated in the recentliterature the underlying mechanism motivating the extreme magnetoresistancepeaks in the T<missing VAR>Ls relates to the suppression of superconductivity mainly due tothe magnetic coupling of the two FM<missing VAR> layers as the out-of-plane rotation oftheir magnetizations takes place across the coercive field where stray fieldsemerge in their whole surface owing to the multidomain magnetic state that theyacquire.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[408.0, 75, ',', 9],[54.0, 75, ',', 0]

F
###Synergy of exchange bias with superconductivity in ferromagnetic-superconducting layered hybrids: the influence of in-plane and out-of-plane magnetic order on superconductivity|D. Stamopoulos,E. Manios,M. Pissas###
(1813356, 1813356)
 B 75, 184504 (2007)] enable us to revealan underlying parameter that may falsify the interpretation of the transportproperties of relevant FM<missing VAR>-SC-FM TLs and FM<missing VAR>-SC BLs investigated in the recentliterature the underlying mechanism motivating the extreme magnetoresistancepeaks in the T<missing VAR>Ls relates to the suppression of superconductivity mainly due tothe magnetic coupling of the two FM<missing VAR> layers as the out-of-plane rotation oftheir magnetizations takes place across the coercive field where stray fieldsemerge in their whole surface owing to the multidomain magnetic state that theyacquire.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[416.0, 75, ',', 9],[62.0, 75, ',', 0]

SC
###Synergy of exchange bias with superconductivity in ferromagnetic-superconducting layered hybrids: the influence of in-plane and out-of-plane magnetic order on superconductivity|D. Stamopoulos,E. Manios,M. Pissas###
(1813359, 1813360)
 B 75, 184504 (2007)] enable us to revealan underlying parameter that may falsify the interpretation of the transportproperties of relevant FM<missing VAR>-SC-FM TLs and FM<missing VAR>-SC BLs investigated in the recentliterature the underlying mechanism motivating the extreme magnetoresistancepeaks in the T<missing VAR>Ls relates to the suppression of superconductivity mainly due tothe magnetic coupling of the two FM<missing VAR> layers as the out-of-plane rotation oftheir magnetizations takes place across the coercive field where stray fieldsemerge in their whole surface owing to the multidomain magnetic state that theyacquire.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[419.0, 75, ',', 9],[65.0, 75, ',', 0]

B
###Synergy of exchange bias with superconductivity in ferromagnetic-superconducting layered hybrids: the influence of in-plane and out-of-plane magnetic order on superconductivity|D. Stamopoulos,E. Manios,M. Pissas###
(1813362, 1813362)
 B 75, 184504 (2007)] enable us to revealan underlying parameter that may falsify the interpretation of the transportproperties of relevant FM<missing VAR>-SC-FM TLs and FM<missing VAR>-SC BLs investigated in the recentliterature the underlying mechanism motivating the extreme magnetoresistancepeaks in the T<missing VAR>Ls relates to the suppression of superconductivity mainly due tothe magnetic coupling of the two FM<missing VAR> layers as the out-of-plane rotation oftheir magnetizations takes place across the coercive field where stray fieldsemerge in their whole surface owing to the multidomain magnetic state that theyacquire.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[422.0, 75, ',', 9],[68.0, 75, ',', 0]

F
###Synergy of exchange bias with superconductivity in ferromagnetic-superconducting layered hybrids: the influence of in-plane and out-of-plane magnetic order on superconductivity|D. Stamopoulos,E. Manios,M. Pissas###
(1813431, 1813431)
 B 75, 184504 (2007)] enable us to revealan underlying parameter that may falsify the interpretation of the transportproperties of relevant FM<missing VAR>-SC-FM TLs and FM<missing VAR>-SC BLs investigated in the recentliterature the underlying mechanism motivating the extreme magnetoresistancepeaks in the T<missing VAR>Ls relates to the suppression of superconductivity mainly due tothe magnetic coupling of the two FM<missing VAR> layers as the out-of-plane rotation oftheir magnetizations takes place across the coercive field where stray fieldsemerge in their whole surface owing to the multidomain magnetic state that theyacquire.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[491.0, 75, ',', 9],[137.0, 75, ',', 0]

In
###Spin transport in nanocontacts and nanowires|David Jacob###
(1813525, 1813525)
 In this thesis we study electron transport through magnetic nanocontacts andnanowires with ab initio quantum transport calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Spin transport in nanocontacts and nanowires|David Jacob###
(1813672, 1813672)
 Tothis end our ab initio quantum transport program AL<missing VAR>ACANT<missing VAR> which combines thenon-equilibrium Greens<missing VAR> function formalism (NEGF) with density functionaltheory (DFT) calculations has been extended to describe spin-polarized systems.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Spin transport in nanocontacts and nanowires|David Jacob###
(1813674, 1813674)
 Tothis end our ab initio quantum transport program AL<missing VAR>ACANT<missing VAR> which combines thenon-equilibrium Greens<missing VAR> function formalism (NEGF) with density functionaltheory (DFT) calculations has been extended to describe spin-polarized systems.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Spin transport in nanocontacts and nanowires|David Jacob###
(1813696, 1813696)
 Tothis end our ab initio quantum transport program AL<missing VAR>ACANT<missing VAR> which combines thenon-equilibrium Greens<missing VAR> function formalism (NEGF) with density functionaltheory (DFT) calculations has been extended to describe spin-polarized systems.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Spin transport in nanocontacts and nanowires|David Jacob###
(1813699, 1813699)
 Tothis end our ab initio quantum transport program AL<missing VAR>ACANT<missing VAR> which combines thenon-equilibrium Greens<missing VAR> function formalism (NEGF) with density functionaltheory (DFT) calculations has been extended to describe spin-polarized systems.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Spin transport in nanocontacts and nanowires|David Jacob###
(1813751, 1813751)
We present calculations on nanocontacts made of Ni as a prototypical magneticmaterial.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Spin transport in nanocontacts and nanowires|David Jacob###
(1813830, 1813830)
 We find that atomic disorder in the contact region strongly reducesthe a priori high spin-polarization of the conductance leading to rathermoderate values of the so-called ballistic magnetoresistance (BMR).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Spin transport in nanocontacts and nanowires|David Jacob###
(1813893, 1813893)
 On theother hand, we show that the adsorption of oxygen in the contact region couldstrongly enhance the spin-polarization of the conduction electrons and thus BMRby eliminating the spin-unpolarized s<missing VAR>-channel.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Spin transport in nanocontacts and nanowires|David Jacob###
(1813927, 1813927)
 Finally, we show that shortatomic Pt chains suspended between the tips of a nanocontact are magnetic incontrast to bulk Pt.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Spin transport in nanocontacts and nanowires|David Jacob###
(1813958, 1813958)
 Finally, we show that shortatomic Pt chains suspended between the tips of a nanocontact are magnetic incontrast to bulk Pt.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin transport in nanocontacts and nanowires|David Jacob###
(1814011, 1814011)
 In conclusion, we find thatspin-transport through atomic-scale conductors is quite sensitive to the actualatomic structure as well as to the chemical composition of the conductor.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Electrical and magnetic properties of nano-scale Pi-junctions|Samanta Piano###
(1814181, 1814181)
 In this respect our research is devoted to the evaluation of thebest materials for the development and the realization of the quantum devicesbased on superconductors and at the same point towards the reduction of thesize of the employed heterostructures towards and below nano-scale.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Electrical and magnetic properties of nano-scale Pi-junctions|Samanta Piano###
(1814279, 1814279)
 In thischapter we report our investigation of transitions from 0 to Pi states inNb Josephson junctions with strongly ferromagnetic barriers of Co, Ni,Ni80Fe20 (Py) and Fe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nb
###Electrical and magnetic properties of nano-scale Pi-junctions|Samanta Piano###
(1814311, 1814311)
 In thischapter we report our investigation of transitions from 0 to Pi states inNb Josephson junctions with strongly ferromagnetic barriers of Co, Ni,Ni80Fe20 (Py) and Fe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Electrical and magnetic properties of nano-scale Pi-junctions|Samanta Piano###
(1814327, 1814327)
 In thischapter we report our investigation of transitions from 0 to Pi states inNb Josephson junctions with strongly ferromagnetic barriers of Co, Ni,Ni80Fe20 (Py) and Fe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Electrical and magnetic properties of nano-scale Pi-junctions|Samanta Piano###
(1814330, 1814330)
 In thischapter we report our investigation of transitions from 0 to Pi states inNb Josephson junctions with strongly ferromagnetic barriers of Co, Ni,Ni80Fe20 (Py) and Fe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni80Fe20
###Electrical and magnetic properties of nano-scale Pi-junctions|Samanta Piano###
(1814334, 1814337)
 In thischapter we report our investigation of transitions from 0 to Pi states inNb Josephson junctions with strongly ferromagnetic barriers of Co, Ni,Ni80Fe20 (Py) and Fe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0.8,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Electrical and magnetic properties of nano-scale Pi-junctions|Samanta Piano###
(1814345, 1814345)
 In thischapter we report our investigation of transitions from 0 to Pi states inNb Josephson junctions with strongly ferromagnetic barriers of Co, Ni,Ni80Fe20 (Py) and Fe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nb
###Electrical and magnetic properties of nano-scale Pi-junctions|Samanta Piano###
(1814367, 1814367)
 We show that it is possible to fabricatenanostructured Nb/ Ni(Co, Py, Fe)/Nb pi-junctions with a nano-scale magneticdead layer and with a high level of control over the ferromagnetic barrierthickness variation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Electrical and magnetic properties of nano-scale Pi-junctions|Samanta Piano###
(1814370, 1814370)
 We show that it is possible to fabricatenanostructured Nb/ Ni(Co, Py, Fe)/Nb pi-junctions with a nano-scale magneticdead layer and with a high level of control over the ferromagnetic barrierthickness variation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Co
###Electrical and magnetic properties of nano-scale Pi-junctions|Samanta Piano###
(1814372, 1814372)
 We show that it is possible to fabricatenanostructured Nb/ Ni(Co, Py, Fe)/Nb pi-junctions with a nano-scale magneticdead layer and with a high level of control over the ferromagnetic barrierthickness variation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Electrical and magnetic properties of nano-scale Pi-junctions|Samanta Piano###
(1814378, 1814378)
 We show that it is possible to fabricatenanostructured Nb/ Ni(Co, Py, Fe)/Nb pi-junctions with a nano-scale magneticdead layer and with a high level of control over the ferromagnetic barrierthickness variation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Nb
###Electrical and magnetic properties of nano-scale Pi-junctions|Samanta Piano###
(1814381, 1814381)
 We show that it is possible to fabricatenanostructured Nb/ Ni(Co, Py, Fe)/Nb pi-junctions with a nano-scale magneticdead layer and with a high level of control over the ferromagnetic barrierthickness variation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Electrical and magnetic properties of nano-scale Pi-junctions|Samanta Piano###
(1814430, 1814430)
 In agreement with the theoretical model we estimate, fromthe oscillations of the critical current as function of the ferromagneticbarrier thickness, the exchange energy of the ferromagnetic material and weobtain that it is close to bulk ferromagnetic materials implying that theferromagnet is clean and S/F roughness is minimal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S/F
###Electrical and magnetic properties of nano-scale Pi-junctions|Samanta Piano###
(1814530, 1814532)
 In agreement with the theoretical model we estimate, fromthe oscillations of the critical current as function of the ferromagneticbarrier thickness, the exchange energy of the ferromagnetic material and weobtain that it is close to bulk ferromagnetic materials implying that theferromagnet is clean and S/F roughness is minimal.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

S/F/S
###Electrical and magnetic properties of nano-scale Pi-junctions|Samanta Piano###
(1814547, 1814551)
 We conclude that S/F/SJosephson junctions are viable structures in the development ofsuperconductor-based quantum electronic devices; in particular Nb/Co/Nb andNb/Fe/Nb multilayers with their low value of the magnetic dead layer and highvalue of the exchange energy can readily be used in controllable two-levelquantum information systems.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Nb/Co/Nb
###Electrical and magnetic properties of nano-scale Pi-junctions|Samanta Piano###
(1814588, 1814592)
 We conclude that S/F/SJosephson junctions are viable structures in the development ofsuperconductor-based quantum electronic devices; in particular Nb/Co/Nb andNb/Fe/Nb multilayers with their low value of the magnetic dead layer and highvalue of the exchange energy can readily be used in controllable two-levelquantum information systems.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Nb/Fe/Nb
###Electrical and magnetic properties of nano-scale Pi-junctions|Samanta Piano###
(1814597, 1814601)
 We conclude that S/F/SJosephson junctions are viable structures in the development ofsuperconductor-based quantum electronic devices; in particular Nb/Co/Nb andNb/Fe/Nb multilayers with their low value of the magnetic dead layer and highvalue of the exchange energy can readily be used in controllable two-levelquantum information systems.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

In
###Electrical and magnetic properties of nano-scale Pi-junctions|Samanta Piano###
(1814662, 1814662)
 In this respect, we discuss applications of ournano-junctions to engineering magnetoresistive devices such as programmablepseudo-spin-valve Josephson structures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(Sr3Sc2O5)Fe2As2
###(Sr_3Sc_2O_5)Fe_2As_2 as a possible parent compound for FeAs-based superconductors|Xiyu Zhu,Fei Han,Gang Mu,Bin Zeng,Peng Cheng,Bing Shen,Hai-Hu Wen###
(1814718, 1814729)
(Sr3Sc2O5)Fe2As2 as a possible parent compound for FeAs-based superconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0.35714285714285715,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0.21428571428571427,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[282.0, 60, 'K', 5]

FeAs
###(Sr_3Sc_2O_5)Fe_2As_2 as a possible parent compound for FeAs-based superconductors|Xiyu Zhu,Fei Han,Gang Mu,Bin Zeng,Peng Cheng,Bing Shen,Hai-Hu Wen###
(1814743, 1814744)
(Sr3Sc2O5)Fe2As2 as a possible parent compound for FeAs-based superconductors.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[267.0, 60, 'K', 5]

FeAs
###(Sr_3Sc_2O_5)Fe_2As_2 as a possible parent compound for FeAs-based superconductors|Xiyu Zhu,Fei Han,Gang Mu,Bin Zeng,Peng Cheng,Bing Shen,Hai-Hu Wen###
(1814761, 1814762)
 A new compound with the FeAs-layers, namely (Sr3Sc2O5)Fe2As2(abbreviated as FeAs-32522), was successfully fabricated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[249.0, 60, 'K', 4]

(Sr3Sc2O5)Fe2As2
###(Sr_3Sc_2O_5)Fe_2As_2 as a possible parent compound for FeAs-based superconductors|Xiyu Zhu,Fei Han,Gang Mu,Bin Zeng,Peng Cheng,Bing Shen,Hai-Hu Wen###
(1814769, 1814780)
 A new compound with the FeAs-layers, namely (Sr3Sc2O5)Fe2As2(abbreviated as FeAs-32522), was successfully fabricated.
Featurization terminated normally.
0,0,0,0,0,0,0,0.35714285714285715,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0.21428571428571427,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[231.0, 60, 'K', 4]

FeAs
###(Sr_3Sc_2O_5)Fe_2As_2 as a possible parent compound for FeAs-based superconductors|Xiyu Zhu,Fei Han,Gang Mu,Bin Zeng,Peng Cheng,Bing Shen,Hai-Hu Wen###
(1814788, 1814789)
 A new compound with the FeAs-layers, namely (Sr3Sc2O5)Fe2As2(abbreviated as FeAs-32522), was successfully fabricated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[222.0, 60, 'K', 4]

I4
###(Sr_3Sc_2O_5)Fe_2As_2 as a possible parent compound for FeAs-based superconductors|Xiyu Zhu,Fei Han,Gang Mu,Bin Zeng,Peng Cheng,Bing Shen,Hai-Hu Wen###
(1814823, 1814824)
 It has a layeredstructure with the space group of I4/mmm, and with the lattice constants a 4.069 AA and c<missing VAR>  26.876 AA.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[187.0, 60, 'K', 3]

Fe
###(Sr_3Sc_2O_5)Fe_2As_2 as a possible parent compound for FeAs-based superconductors|Xiyu Zhu,Fei Han,Gang Mu,Bin Zeng,Peng Cheng,Bing Shen,Hai-Hu Wen###
(1814865, 1814865)
 The in-plane Fe ions construct a squarelattice which is close to that of other FeAs-based superconductors, such asREFeAsO (RE  rare earth elements) and (Ba,Sr)Fe2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 60, 'K', 2]

FeAs
###(Sr_3Sc_2O_5)Fe_2As_2 as a possible parent compound for FeAs-based superconductors|Xiyu Zhu,Fei Han,Gang Mu,Bin Zeng,Peng Cheng,Bing Shen,Hai-Hu Wen###
(1814892, 1814893)
 The in-plane Fe ions construct a squarelattice which is close to that of other FeAs-based superconductors, such asREFeAsO (RE  rare earth elements) and (Ba,Sr)Fe2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 60, 'K', 2]

FeAsO
###(Sr_3Sc_2O_5)Fe_2As_2 as a possible parent compound for FeAs-based superconductors|Xiyu Zhu,Fei Han,Gang Mu,Bin Zeng,Peng Cheng,Bing Shen,Hai-Hu Wen###
(1814907, 1814909)
 The in-plane Fe ions construct a squarelattice which is close to that of other FeAs-based superconductors, such asREFeAsO (RE  rare earth elements) and (Ba,Sr)Fe2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 60, 'K', 2]

Ba
###(Sr_3Sc_2O_5)Fe_2As_2 as a possible parent compound for FeAs-based superconductors|Xiyu Zhu,Fei Han,Gang Mu,Bin Zeng,Peng Cheng,Bing Shen,Hai-Hu Wen###
(1814926, 1814926)
 The in-plane Fe ions construct a squarelattice which is close to that of other FeAs-based superconductors, such asREFeAsO (RE  rare earth elements) and (Ba,Sr)Fe2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 60, 'K', 2]

Sr
###(Sr_3Sc_2O_5)Fe_2As_2 as a possible parent compound for FeAs-based superconductors|Xiyu Zhu,Fei Han,Gang Mu,Bin Zeng,Peng Cheng,Bing Shen,Hai-Hu Wen###
(1814928, 1814928)
 The in-plane Fe ions construct a squarelattice which is close to that of other FeAs-based superconductors, such asREFeAsO (RE  rare earth elements) and (Ba,Sr)Fe2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 60, 'K', 2]

Fe2As2
###(Sr_3Sc_2O_5)Fe_2As_2 as a possible parent compound for FeAs-based superconductors|Xiyu Zhu,Fei Han,Gang Mu,Bin Zeng,Peng Cheng,Bing Shen,Hai-Hu Wen###
(1814930, 1814933)
 The in-plane Fe ions construct a squarelattice which is close to that of other FeAs-based superconductors, such asREFeAsO (RE  rare earth elements) and (Ba,Sr)Fe2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 60, 'K', 2]

FeAs
###(Sr_3Sc_2O_5)Fe_2As_2 as a possible parent compound for FeAs-based superconductors|Xiyu Zhu,Fei Han,Gang Mu,Bin Zeng,Peng Cheng,Bing Shen,Hai-Hu Wen###
(1814943, 1814944)
 However the interFeAs-layer spacing in the new compound is greatly enlarged.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 60, 'K', 1]

FeAsO
###(Sr_3Sc_2O_5)Fe_2As_2 as a possible parent compound for FeAs-based superconductors|Xiyu Zhu,Fei Han,Gang Mu,Bin Zeng,Peng Cheng,Bing Shen,Hai-Hu Wen###
(1815072, 1815074)
 Interestingly, thewell-known resistivity anomaly which was discovered in all other parentcompounds, such as REFeAsO, (Ba,Sr)Fe2As2 and (Sr,Ca,Eu)FeAsF and associatedwith the Spin-Density-Wave (SD<missing VAR>W)/structural transition has not been found inthe new system either on the resistivity data or the magnetization data.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 60, 'K', 2]

Ba
###(Sr_3Sc_2O_5)Fe_2As_2 as a possible parent compound for FeAs-based superconductors|Xiyu Zhu,Fei Han,Gang Mu,Bin Zeng,Peng Cheng,Bing Shen,Hai-Hu Wen###
(1815078, 1815078)
 Interestingly, thewell-known resistivity anomaly which was discovered in all other parentcompounds, such as REFeAsO, (Ba,Sr)Fe2As2 and (Sr,Ca,Eu)FeAsF and associatedwith the Spin-Density-Wave (SD<missing VAR>W)/structural transition has not been found inthe new system either on the resistivity data or the magnetization data.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 60, 'K', 2]

Sr
###(Sr_3Sc_2O_5)Fe_2As_2 as a possible parent compound for FeAs-based superconductors|Xiyu Zhu,Fei Han,Gang Mu,Bin Zeng,Peng Cheng,Bing Shen,Hai-Hu Wen###
(1815080, 1815080)
 Interestingly, thewell-known resistivity anomaly which was discovered in all other parentcompounds, such as REFeAsO, (Ba,Sr)Fe2As2 and (Sr,Ca,Eu)FeAsF and associatedwith the Spin-Density-Wave (SD<missing VAR>W)/structural transition has not been found inthe new system either on the resistivity data or the magnetization data.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 60, 'K', 2]

Fe2As2
###(Sr_3Sc_2O_5)Fe_2As_2 as a possible parent compound for FeAs-based superconductors|Xiyu Zhu,Fei Han,Gang Mu,Bin Zeng,Peng Cheng,Bing Shen,Hai-Hu Wen###
(1815082, 1815085)
 Interestingly, thewell-known resistivity anomaly which was discovered in all other parentcompounds, such as REFeAsO, (Ba,Sr)Fe2As2 and (Sr,Ca,Eu)FeAsF and associatedwith the Spin-Density-Wave (SD<missing VAR>W)/structural transition has not been found inthe new system either on the resistivity data or the magnetization data.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 60, 'K', 2]

Sr
###(Sr_3Sc_2O_5)Fe_2As_2 as a possible parent compound for FeAs-based superconductors|Xiyu Zhu,Fei Han,Gang Mu,Bin Zeng,Peng Cheng,Bing Shen,Hai-Hu Wen###
(1815090, 1815090)
 Interestingly, thewell-known resistivity anomaly which was discovered in all other parentcompounds, such as REFeAsO, (Ba,Sr)Fe2As2 and (Sr,Ca,Eu)FeAsF and associatedwith the Spin-Density-Wave (SD<missing VAR>W)/structural transition has not been found inthe new system either on the resistivity data or the magnetization data.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 60, 'K', 2]

Ca
###(Sr_3Sc_2O_5)Fe_2As_2 as a possible parent compound for FeAs-based superconductors|Xiyu Zhu,Fei Han,Gang Mu,Bin Zeng,Peng Cheng,Bing Shen,Hai-Hu Wen###
(1815092, 1815092)
 Interestingly, thewell-known resistivity anomaly which was discovered in all other parentcompounds, such as REFeAsO, (Ba,Sr)Fe2As2 and (Sr,Ca,Eu)FeAsF and associatedwith the Spin-Density-Wave (SD<missing VAR>W)/structural transition has not been found inthe new system either on the resistivity data or the magnetization data.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 60, 'K', 2]

Eu
###(Sr_3Sc_2O_5)Fe_2As_2 as a possible parent compound for FeAs-based superconductors|Xiyu Zhu,Fei Han,Gang Mu,Bin Zeng,Peng Cheng,Bing Shen,Hai-Hu Wen###
(1815094, 1815094)
 Interestingly, thewell-known resistivity anomaly which was discovered in all other parentcompounds, such as REFeAsO, (Ba,Sr)Fe2As2 and (Sr,Ca,Eu)FeAsF and associatedwith the Spin-Density-Wave (SD<missing VAR>W)/structural transition has not been found inthe new system either on the resistivity data or the magnetization data.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 60, 'K', 2]

FeAsF
###(Sr_3Sc_2O_5)Fe_2As_2 as a possible parent compound for FeAs-based superconductors|Xiyu Zhu,Fei Han,Gang Mu,Bin Zeng,Peng Cheng,Bing Shen,Hai-Hu Wen###
(1815096, 1815098)
 Interestingly, thewell-known resistivity anomaly which was discovered in all other parentcompounds, such as REFeAsO, (Ba,Sr)Fe2As2 and (Sr,Ca,Eu)FeAsF and associatedwith the Spin-Density-Wave (SD<missing VAR>W)/structural transition has not been found inthe new system either on the resistivity data or the magnetization data.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 60, 'K', 2]

S
###(Sr_3Sc_2O_5)Fe_2As_2 as a possible parent compound for FeAs-based superconductors|Xiyu Zhu,Fei Han,Gang Mu,Bin Zeng,Peng Cheng,Bing Shen,Hai-Hu Wen###
(1815116, 1815116)
 Interestingly, thewell-known resistivity anomaly which was discovered in all other parentcompounds, such as REFeAsO, (Ba,Sr)Fe2As2 and (Sr,Ca,Eu)FeAsF and associatedwith the Spin-Density-Wave (SD<missing VAR>W)/structural transition has not been found inthe new system either on the resistivity data or the magnetization data.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 60, 'K', 2]

W
###(Sr_3Sc_2O_5)Fe_2As_2 as a possible parent compound for FeAs-based superconductors|Xiyu Zhu,Fei Han,Gang Mu,Bin Zeng,Peng Cheng,Bing Shen,Hai-Hu Wen###
(1815118, 1815118)
 Interestingly, thewell-known resistivity anomaly which was discovered in all other parentcompounds, such as REFeAsO, (Ba,Sr)Fe2As2 and (Sr,Ca,Eu)FeAsF and associatedwith the Spin-Density-Wave (SD<missing VAR>W)/structural transition has not been found inthe new system either on the resistivity data or the magnetization data.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 60, 'K', 2]

FeAs
###(Sr_3Sc_2O_5)Fe_2As_2 as a possible parent compound for FeAs-based superconductors|Xiyu Zhu,Fei Han,Gang Mu,Bin Zeng,Peng Cheng,Bing Shen,Hai-Hu Wen###
(1815184, 1815185)
 Thiscould be induced by the large spacing distance between the FeAs-planes,therefore the antiferromagnetic correlation between the moments of Fe ions inneighboring FeAs-layers cannot be established.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 60, 'K', 3]

Fe
###(Sr_3Sc_2O_5)Fe_2As_2 as a possible parent compound for FeAs-based superconductors|Xiyu Zhu,Fei Han,Gang Mu,Bin Zeng,Peng Cheng,Bing Shen,Hai-Hu Wen###
(1815207, 1815207)
 Thiscould be induced by the large spacing distance between the FeAs-planes,therefore the antiferromagnetic correlation between the moments of Fe ions inneighboring FeAs-layers cannot be established.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[196.0, 60, 'K', 3]

FeAs
###(Sr_3Sc_2O_5)Fe_2As_2 as a possible parent compound for FeAs-based superconductors|Xiyu Zhu,Fei Han,Gang Mu,Bin Zeng,Peng Cheng,Bing Shen,Hai-Hu Wen###
(1815216, 1815217)
 Thiscould be induced by the large spacing distance between the FeAs-planes,therefore the antiferromagnetic correlation between the moments of Fe ions inneighboring FeAs-layers cannot be established.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, 60, 'K', 3]

Fe
###(Sr_3Sc_2O_5)Fe_2As_2 as a possible parent compound for FeAs-based superconductors|Xiyu Zhu,Fei Han,Gang Mu,Bin Zeng,Peng Cheng,Bing Shen,Hai-Hu Wen###
(1815253, 1815253)
 Alternatively it can also beattributed to the self-doping effect between Fe and Sc ions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[242.0, 60, 'K', 4]

Sc
###(Sr_3Sc_2O_5)Fe_2As_2 as a possible parent compound for FeAs-based superconductors|Xiyu Zhu,Fei Han,Gang Mu,Bin Zeng,Peng Cheng,Bing Shen,Hai-Hu Wen###
(1815257, 1815257)
 Alternatively it can also beattributed to the self-doping effect between Fe and Sc ions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[246.0, 60, 'K', 4]

H
###(Sr_3Sc_2O_5)Fe_2As_2 as a possible parent compound for FeAs-based superconductors|Xiyu Zhu,Fei Han,Gang Mu,Bin Zeng,Peng Cheng,Bing Shen,Hai-Hu Wen###
(1815270, 1815270)
 The Hallcoefficient R<missing VAR>H is negative but strongly temperature dependent in widetemperature region, which indicates the dominance of electrical conduction byelectron-like charge carriers and probably a multi-band effect or a spinrelated scattering effect.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[259.0, 60, 'K', 5]

H
###Transport theory for disordered multiple-band systems: Anomalous Hall effect and anisotropic magnetoresistance|Alexey A. Kovalev,Yaroslav Tserkovnyak,Karel Vyborny,Jairo Sinova###
(1815524, 1815524)
 We apply this formalismto a Rashba 2DEG ferromagnet and calculate the anomalous Hall effect (AHE) andanisotropic magnetoresistance (AMR).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 2, 'DEG', 0],[175.0, 1.6, ',', 3]

As
###Transport theory for disordered multiple-band systems: Anomalous Hall effect and anisotropic magnetoresistance|Alexey A. Kovalev,Yaroslav Tserkovnyak,Karel Vyborny,Jairo Sinova###
(1815610, 1815610)
 As we increase thedisorder further, the AHE<missing VAR> starts to diminish due to the spectral broadening ofthe quasiparticles.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 2, 'DEG', 2],[89.0, 1.6, ',', 1]

H
###Transport theory for disordered multiple-band systems: Anomalous Hall effect and anisotropic magnetoresistance|Alexey A. Kovalev,Yaroslav Tserkovnyak,Karel Vyborny,Jairo Sinova###
(1815627, 1815627)
 As we increase thedisorder further, the AHE<missing VAR> starts to diminish due to the spectral broadening ofthe quasiparticles.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 2, 'DEG', 2],[72.0, 1.6, ',', 1]

H
###Transport theory for disordered multiple-band systems: Anomalous Hall effect and anisotropic magnetoresistance|Alexey A. Kovalev,Yaroslav Tserkovnyak,Karel Vyborny,Jairo Sinova###
(1815671, 1815671)
 Although for certain parameters this reduction of the AHE<missing VAR>can be approximated as sigmaxythicksimsigmaxxvarphi withvarphi varying around 1.6, this is found not to be true in general assigmaxy can go through a change in sign as a function of disorderstrength in some cases.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 2, 'DEG', 3],[28.0, 1.6, ',', 0]

H
###Transport theory for disordered multiple-band systems: Anomalous Hall effect and anisotropic magnetoresistance|Alexey A. Kovalev,Yaroslav Tserkovnyak,Karel Vyborny,Jairo Sinova###
(1815846, 1815846)
 By considering the higher orderskew scattering processes, we resolve some discrepancies between the AHE<missing VAR>results obtained by using the Keldysh, Kubo and Boltzmann approaches.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[340.0, 2, 'DEG', 5],[147.0, 1.6, ',', 2]

YBa2Cu3O7
###Magnetic interactions and electron transport in hole-doped manganite-superconducting cuprate heterostructures|Soumen Mandal###
(1816072, 1816078)
YBa2Cu3O7 - La2 / 3Sr1 / 3MnO3 heterostructuresof (110) orientation are grown to allow direct injection of spin polarizedholes from the La2 / 3Sr1 / 3MnO3 (LSMO) into the CuO2superconducting planes of the YBa2Cu3O7 (YBCO).
Featurization terminated normally.
0,0,0,0,0,0,0,0.5384615384615384,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23076923076923078,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15384615384615385,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 72000, '%', 1]

La2
###Magnetic interactions and electron transport in hole-doped manganite-superconducting cuprate heterostructures|Soumen Mandal###
(1816082, 1816083)
YBa2Cu3O7 - La2 / 3Sr1 / 3MnO3 heterostructuresof (110) orientation are grown to allow direct injection of spin polarizedholes from the La2 / 3Sr1 / 3MnO3 (LSMO) into the CuO2superconducting planes of the YBa2Cu3O7 (YBCO).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 72000, '%', 1]

Sr1
###Magnetic interactions and electron transport in hole-doped manganite-superconducting cuprate heterostructures|Soumen Mandal###
(1816088, 1816089)
YBa2Cu3O7 - La2 / 3Sr1 / 3MnO3 heterostructuresof (110) orientation are grown to allow direct injection of spin polarizedholes from the La2 / 3Sr1 / 3MnO3 (LSMO) into the CuO2superconducting planes of the YBa2Cu3O7 (YBCO).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 72000, '%', 1]

MnO3
###Magnetic interactions and electron transport in hole-doped manganite-superconducting cuprate heterostructures|Soumen Mandal###
(1816094, 1816096)
YBa2Cu3O7 - La2 / 3Sr1 / 3MnO3 heterostructuresof (110) orientation are grown to allow direct injection of spin polarizedholes from the La2 / 3Sr1 / 3MnO3 (LSMO) into the CuO2superconducting planes of the YBa2Cu3O7 (YBCO).
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 72000, '%', 1]

La2
###Magnetic interactions and electron transport in hole-doped manganite-superconducting cuprate heterostructures|Soumen Mandal###
(1816134, 1816135)
YBa2Cu3O7 - La2 / 3Sr1 / 3MnO3 heterostructuresof (110) orientation are grown to allow direct injection of spin polarizedholes from the La2 / 3Sr1 / 3MnO3 (LSMO) into the CuO2superconducting planes of the YBa2Cu3O7 (YBCO).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 72000, '%', 1]

Sr1
###Magnetic interactions and electron transport in hole-doped manganite-superconducting cuprate heterostructures|Soumen Mandal###
(1816140, 1816141)
YBa2Cu3O7 - La2 / 3Sr1 / 3MnO3 heterostructuresof (110) orientation are grown to allow direct injection of spin polarizedholes from the La2 / 3Sr1 / 3MnO3 (LSMO) into the CuO2superconducting planes of the YBa2Cu3O7 (YBCO).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 72000, '%', 1]

MnO3
###Magnetic interactions and electron transport in hole-doped manganite-superconducting cuprate heterostructures|Soumen Mandal###
(1816146, 1816148)
YBa2Cu3O7 - La2 / 3Sr1 / 3MnO3 heterostructuresof (110) orientation are grown to allow direct injection of spin polarizedholes from the La2 / 3Sr1 / 3MnO3 (LSMO) into the CuO2superconducting planes of the YBa2Cu3O7 (YBCO).
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 72000, '%', 1]

O
###Magnetic interactions and electron transport in hole-doped manganite-superconducting cuprate heterostructures|Soumen Mandal###
(1816154, 1816154)
YBa2Cu3O7 - La2 / 3Sr1 / 3MnO3 heterostructuresof (110) orientation are grown to allow direct injection of spin polarizedholes from the La2 / 3Sr1 / 3MnO3 (LSMO) into the CuO2superconducting planes of the YBa2Cu3O7 (YBCO).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 72000, '%', 1]

CuO2
###Magnetic interactions and electron transport in hole-doped manganite-superconducting cuprate heterostructures|Soumen Mandal###
(1816161, 1816163)
YBa2Cu3O7 - La2 / 3Sr1 / 3MnO3 heterostructuresof (110) orientation are grown to allow direct injection of spin polarizedholes from the La2 / 3Sr1 / 3MnO3 (LSMO) into the CuO2superconducting planes of the YBa2Cu3O7 (YBCO).
Featurization terminated normally.
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 72000, '%', 1]

YBa2Cu3O7
###Magnetic interactions and electron transport in hole-doped manganite-superconducting cuprate heterostructures|Soumen Mandal###
(1816174, 1816180)
YBa2Cu3O7 - La2 / 3Sr1 / 3MnO3 heterostructuresof (110) orientation are grown to allow direct injection of spin polarizedholes from the La2 / 3Sr1 / 3MnO3 (LSMO) into the CuO2superconducting planes of the YBa2Cu3O7 (YBCO).
Featurization terminated normally.
0,0,0,0,0,0,0,0.5384615384615384,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23076923076923078,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15384615384615385,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 72000, '%', 1]

(YBCO)
###Magnetic interactions and electron transport in hole-doped manganite-superconducting cuprate heterostructures|Soumen Mandal###
(1816182, 1816187)
YBa2Cu3O7 - La2 / 3Sr1 / 3MnO3 heterostructuresof (110) orientation are grown to allow direct injection of spin polarizedholes from the La2 / 3Sr1 / 3MnO3 (LSMO) into the CuO2superconducting planes of the YBa2Cu3O7 (YBCO).
Featurization successful!
0,0,0,0,0.25,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 72000, '%', 1]

O
###Magnetic interactions and electron transport in hole-doped manganite-superconducting cuprate heterostructures|Soumen Mandal###
(1816202, 1816202)
 Galvanomagneticstudies on the LSMO-YBCO-LSMO trilayers reveal unusually high AMR(sim72000%) on rotating the field in the plane of the heterostructure whosemagnetic ground state is antiferromagnetic (AF).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 72000, '%', 0]

YBCO
###Magnetic interactions and electron transport in hole-doped manganite-superconducting cuprate heterostructures|Soumen Mandal###
(1816204, 1816207)
 Galvanomagneticstudies on the LSMO-YBCO-LSMO trilayers reveal unusually high AMR(sim72000%) on rotating the field in the plane of the heterostructure whosemagnetic ground state is antiferromagnetic (AF).
Featurization terminated normally.
0,0,0,0,0.25,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 72000, '%', 0]

O
###Magnetic interactions and electron transport in hole-doped manganite-superconducting cuprate heterostructures|Soumen Mandal###
(1816212, 1816212)
 Galvanomagneticstudies on the LSMO-YBCO-LSMO trilayers reveal unusually high AMR(sim72000%) on rotating the field in the plane of the heterostructure whosemagnetic ground state is antiferromagnetic (AF).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 72000, '%', 0]

F
###Magnetic interactions and electron transport in hole-doped manganite-superconducting cuprate heterostructures|Soumen Mandal###
(1816268, 1816268)
 Galvanomagneticstudies on the LSMO-YBCO-LSMO trilayers reveal unusually high AMR(sim72000%) on rotating the field in the plane of the heterostructure whosemagnetic ground state is antiferromagnetic (AF).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 72000, '%', 0]

F
###Magnetic interactions and electron transport in hole-doped manganite-superconducting cuprate heterostructures|Soumen Mandal###
(1816287, 1816287)
 The coupling energy J<missing VAR>1 ofthe AF state in these trilayers is much higher as compared to energy of (001)oriented hybrids.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 72000, '%', 1]

La2
###Magnetic interactions and electron transport in hole-doped manganite-superconducting cuprate heterostructures|Soumen Mandal###
(1816358, 1816359)
 First the preparation and measurement of magnetic andgalvanomagnetic properties of (110) and (001) oriented La2 / 3Sr1 /3MnO3 films are described.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[129.0, 72000, '%', 2]

Sr1
###Magnetic interactions and electron transport in hole-doped manganite-superconducting cuprate heterostructures|Soumen Mandal###
(1816364, 1816365)
 First the preparation and measurement of magnetic andgalvanomagnetic properties of (110) and (001) oriented La2 / 3Sr1 /3MnO3 films are described.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 72000, '%', 2]

MnO3
###Magnetic interactions and electron transport in hole-doped manganite-superconducting cuprate heterostructures|Soumen Mandal###
(1816371, 1816373)
 First the preparation and measurement of magnetic andgalvanomagnetic properties of (110) and (001) oriented La2 / 3Sr1 /3MnO3 films are described.
Featurization terminated normally.
0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 72000, '%', 2]

P
###Magnetic interactions and electron transport in hole-doped manganite-superconducting cuprate heterostructures|Soumen Mandal###
(1816455, 1816455)
 A magnetization orientation phase transition (MRPT)which manifests itself as a discontinuity and hysteresis in R<missing VAR>(psi) wherepsi is the angle between vecH and the easy axis for the vecH belowa critical value vecH has been established.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[226.0, 72000, '%', 4]

H
###Magnetic interactions and electron transport in hole-doped manganite-superconducting cuprate heterostructures|Soumen Mandal###
(1816497, 1816497)
 A magnetization orientation phase transition (MRPT)which manifests itself as a discontinuity and hysteresis in R<missing VAR>(psi) wherepsi is the angle between vecH and the easy axis for the vecH belowa critical value vecH has been established.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[268.0, 72000, '%', 4]

H
###Magnetic interactions and electron transport in hole-doped manganite-superconducting cuprate heterostructures|Soumen Mandal###
(1816512, 1816512)
 A magnetization orientation phase transition (MRPT)which manifests itself as a discontinuity and hysteresis in R<missing VAR>(psi) wherepsi is the angle between vecH and the easy axis for the vecH belowa critical value vecH has been established.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[283.0, 72000, '%', 4]

H
###Magnetic interactions and electron transport in hole-doped manganite-superconducting cuprate heterostructures|Soumen Mandal###
(1816524, 1816524)
 A magnetization orientation phase transition (MRPT)which manifests itself as a discontinuity and hysteresis in R<missing VAR>(psi) wherepsi is the angle between vecH and the easy axis for the vecH belowa critical value vecH has been established.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[295.0, 72000, '%', 4]

Y1-xPr
###Magnetic interactions and electron transport in hole-doped manganite-superconducting cuprate heterostructures|Soumen Mandal###
(1816579, 1816583)
 Further, the relevance ofpair-breaking by exchange and dipolar fields, and by injected spins in a lowcarrier density cuprate Y1-xPrx<missing VAR>Ba2Cu3O7 sandwiched between twoferromagnetic LSMO layers is examined.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[350.0, 72000, '%', 5]

Ba2Cu3O7
###Magnetic interactions and electron transport in hole-doped manganite-superconducting cuprate heterostructures|Soumen Mandal###
(1816585, 1816590)
 Further, the relevance ofpair-breaking by exchange and dipolar fields, and by injected spins in a lowcarrier density cuprate Y1-xPrx<missing VAR>Ba2Cu3O7 sandwiched between twoferromagnetic LSMO layers is examined.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[356.0, 72000, '%', 5]

O
###Magnetic interactions and electron transport in hole-doped manganite-superconducting cuprate heterostructures|Soumen Mandal###
(1816604, 1816604)
 Further, the relevance ofpair-breaking by exchange and dipolar fields, and by injected spins in a lowcarrier density cuprate Y1-xPrx<missing VAR>Ba2Cu3O7 sandwiched between twoferromagnetic LSMO layers is examined.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[375.0, 72000, '%', 5]

At
###Magnetic interactions and electron transport in hole-doped manganite-superconducting cuprate heterostructures|Soumen Mandal###
(1816613, 1816613)
 At low external field (Hext), thesystem shows a giant magnetoresistance(MR), which diverges deep in thesuperconducting state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[384.0, 72000, '%', 6]

H
###Magnetic interactions and electron transport in hole-doped manganite-superconducting cuprate heterostructures|Soumen Mandal###
(1816622, 1816622)
 At low external field (Hext), thesystem shows a giant magnetoresistance(MR), which diverges deep in thesuperconducting state.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[393.0, 72000, '%', 6]

La0.7Ca0.3MnO3
###Spin-polarized tunneling spectroscopic studies of the intrinsic heterogeneity and pseudogap phenomena in colossal magnetoresistive manganite La_{0.7}Ca_{0.3}MnO_{3}|C. R. Hughes,J. Shi,A. D. Beyer,N. -C. Yeh###
(1816701, 1816707)
Spin-polarized tunneling spectroscopic studies of the intrinsic heterogeneity and pseudogap phenomena in colossal magnetoresistive manganite La0.7Ca0.3MnO3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Spin-polarized tunneling spectroscopic studies of the intrinsic heterogeneity and pseudogap phenomena in colossal magnetoresistive manganite La_{0.7}Ca_{0.3}MnO_{3}|C. R. Hughes,J. Shi,A. D. Beyer,N. -C. Yeh###
(1816728, 1816728)
 Spatially resolved tunneling spectroscopic studies of colossalmagnetoresistive (CMR) manganite rm La0.7Ca0.3MnO3 (LCMO) epitaxialfilms on rm (LaAlO3)0.3(Sr2AlTaO6)0.7 substrate are investigated asfunctions of temperature, magnetic field and spin polarization by means ofscanning tunneling spectroscopy.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La0.7Ca0.3MnO3
###Spin-polarized tunneling spectroscopic studies of the intrinsic heterogeneity and pseudogap phenomena in colossal magnetoresistive manganite La_{0.7}Ca_{0.3}MnO_{3}|C. R. Hughes,J. Shi,A. D. Beyer,N. -C. Yeh###
(1816737, 1816743)
 Spatially resolved tunneling spectroscopic studies of colossalmagnetoresistive (CMR) manganite rm La0.7Ca0.3MnO3 (LCMO) epitaxialfilms on rm (LaAlO3)0.3(Sr2AlTaO6)0.7 substrate are investigated asfunctions of temperature, magnetic field and spin polarization by means ofscanning tunneling spectroscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0.06,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.13999999999999999,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Spin-polarized tunneling spectroscopic studies of the intrinsic heterogeneity and pseudogap phenomena in colossal magnetoresistive manganite La_{0.7}Ca_{0.3}MnO_{3}|C. R. Hughes,J. Shi,A. D. Beyer,N. -C. Yeh###
(1816749, 1816749)
 Spatially resolved tunneling spectroscopic studies of colossalmagnetoresistive (CMR) manganite rm La0.7Ca0.3MnO3 (LCMO) epitaxialfilms on rm (LaAlO3)0.3(Sr2AlTaO6)0.7 substrate are investigated asfunctions of temperature, magnetic field and spin polarization by means ofscanning tunneling spectroscopy.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(LaAlO3)0.3
###Spin-polarized tunneling spectroscopic studies of the intrinsic heterogeneity and pseudogap phenomena in colossal magnetoresistive manganite La_{0.7}Ca_{0.3}MnO_{3}|C. R. Hughes,J. Shi,A. D. Beyer,N. -C. Yeh###
(1816761, 1816767)
 Spatially resolved tunneling spectroscopic studies of colossalmagnetoresistive (CMR) manganite rm La0.7Ca0.3MnO3 (LCMO) epitaxialfilms on rm (LaAlO3)0.3(Sr2AlTaO6)0.7 substrate are investigated asfunctions of temperature, magnetic field and spin polarization by means ofscanning tunneling spectroscopy.
Featurization successful!
0,0,0,0,0,0,0,0.6,0,0,0,0,0.19999999999999998,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.19999999999999998,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(Sr2AlTaO6)0.7
###Spin-polarized tunneling spectroscopic studies of the intrinsic heterogeneity and pseudogap phenomena in colossal magnetoresistive manganite La_{0.7}Ca_{0.3}MnO_{3}|C. R. Hughes,J. Shi,A. D. Beyer,N. -C. Yeh###
(1816768, 1816776)
 Spatially resolved tunneling spectroscopic studies of colossalmagnetoresistive (CMR) manganite rm La0.7Ca0.3MnO3 (LCMO) epitaxialfilms on rm (LaAlO3)0.3(Sr2AlTaO6)0.7 substrate are investigated asfunctions of temperature, magnetic field and spin polarization by means ofscanning tunneling spectroscopy.
Featurization successful!
0,0,0,0,0,0,0,0.6,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt/Ir
###Spin-polarized tunneling spectroscopic studies of the intrinsic heterogeneity and pseudogap phenomena in colossal magnetoresistive manganite La_{0.7}Ca_{0.3}MnO_{3}|C. R. Hughes,J. Shi,A. D. Beyer,N. -C. Yeh###
(1816835, 1816837)
 Systematic surveys of the tunneling spectrataken with Pt/Ir tips reveal spatial variations on the length scale of a fewhundred nanometers in the ferromagnetic state, which may be attributed to theintrinsic heterogeneity of the manganites due to their tendency towards phaseseparation.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Cr
###Spin-polarized tunneling spectroscopic studies of the intrinsic heterogeneity and pseudogap phenomena in colossal magnetoresistive manganite La_{0.7}Ca_{0.3}MnO_{3}|C. R. Hughes,J. Shi,A. D. Beyer,N. -C. Yeh###
(1816976, 1816976)
 On the other hand, spectra taken with Cr-coated tips areconsistent with convoluted electronic properties of both LCMO and Cr.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Spin-polarized tunneling spectroscopic studies of the intrinsic heterogeneity and pseudogap phenomena in colossal magnetoresistive manganite La_{0.7}Ca_{0.3}MnO_{3}|C. R. Hughes,J. Shi,A. D. Beyer,N. -C. Yeh###
(1817002, 1817002)
 On the other hand, spectra taken with Cr-coated tips areconsistent with convoluted electronic properties of both LCMO and Cr.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr
###Spin-polarized tunneling spectroscopic studies of the intrinsic heterogeneity and pseudogap phenomena in colossal magnetoresistive manganite La_{0.7}Ca_{0.3}MnO_{3}|C. R. Hughes,J. Shi,A. D. Beyer,N. -C. Yeh###
(1817006, 1817006)
 On the other hand, spectra taken with Cr-coated tips areconsistent with convoluted electronic properties of both LCMO and Cr.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin-polarized tunneling spectroscopic studies of the intrinsic heterogeneity and pseudogap phenomena in colossal magnetoresistive manganite La_{0.7}Ca_{0.3}MnO_{3}|C. R. Hughes,J. Shi,A. D. Beyer,N. -C. Yeh###
(1817009, 1817009)
 Inparticular, for temperatures below the magnetic ordering temperatures of bothCr and LCMO, the magnetic-field dependent tunneling spectra may bequantitatively explained by the scenario of spin-polarized tunneling in aspin-valve configuration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cr
###Spin-polarized tunneling spectroscopic studies of the intrinsic heterogeneity and pseudogap phenomena in colossal magnetoresistive manganite La_{0.7}Ca_{0.3}MnO_{3}|C. R. Hughes,J. Shi,A. D. Beyer,N. -C. Yeh###
(1817034, 1817034)
 Inparticular, for temperatures below the magnetic ordering temperatures of bothCr and LCMO, the magnetic-field dependent tunneling spectra may bequantitatively explained by the scenario of spin-polarized tunneling in aspin-valve configuration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Spin-polarized tunneling spectroscopic studies of the intrinsic heterogeneity and pseudogap phenomena in colossal magnetoresistive manganite La_{0.7}Ca_{0.3}MnO_{3}|C. R. Hughes,J. Shi,A. D. Beyer,N. -C. Yeh###
(1817041, 1817041)
 Inparticular, for temperatures below the magnetic ordering temperatures of bothCr and LCMO, the magnetic-field dependent tunneling spectra may bequantitatively explained by the scenario of spin-polarized tunneling in aspin-valve configuration.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Spin-polarized tunneling spectroscopic studies of the intrinsic heterogeneity and pseudogap phenomena in colossal magnetoresistive manganite La_{0.7}Ca_{0.3}MnO_{3}|C. R. Hughes,J. Shi,A. D. Beyer,N. -C. Yeh###
(1817112, 1817112)
 Moreover, a low-energy insulating energy gap sim0.6 e<missing VAR>V commonly found in the tunneling conductance spectra of bulk metallicLCMO at T<missing VAR> to 0 may be attributed to a surface ferromagnetic insulating (FI)phase, as evidenced by its spin filtering effect at low temperatures andvanishing gap value above the Curie temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Spin-polarized tunneling spectroscopic studies of the intrinsic heterogeneity and pseudogap phenomena in colossal magnetoresistive manganite La_{0.7}Ca_{0.3}MnO_{3}|C. R. Hughes,J. Shi,A. D. Beyer,N. -C. Yeh###
(1817138, 1817138)
 Moreover, a low-energy insulating energy gap sim0.6 e<missing VAR>V commonly found in the tunneling conductance spectra of bulk metallicLCMO at T<missing VAR> to 0 may be attributed to a surface ferromagnetic insulating (FI)phase, as evidenced by its spin filtering effect at low temperatures andvanishing gap value above the Curie temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(FI)
###Spin-polarized tunneling spectroscopic studies of the intrinsic heterogeneity and pseudogap phenomena in colossal magnetoresistive manganite La_{0.7}Ca_{0.3}MnO_{3}|C. R. Hughes,J. Shi,A. D. Beyer,N. -C. Yeh###
(1817164, 1817167)
 Moreover, a low-energy insulating energy gap sim0.6 e<missing VAR>V commonly found in the tunneling conductance spectra of bulk metallicLCMO at T<missing VAR> to 0 may be attributed to a surface ferromagnetic insulating (FI)phase, as evidenced by its spin filtering effect at low temperatures andvanishing gap value above the Curie temperature.
Featurization successful!
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Spin-polarized tunneling spectroscopic studies of the intrinsic heterogeneity and pseudogap phenomena in colossal magnetoresistive manganite La_{0.7}Ca_{0.3}MnO_{3}|C. R. Hughes,J. Shi,A. D. Beyer,N. -C. Yeh###
(1817222, 1817222)
 Additionally, temperatureindependent pseudogap (PG) phenomena existing primarily along the boundaries ofmagnetic domains are observed in the zero-field tunneling spectra.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Spin-polarized tunneling spectroscopic studies of the intrinsic heterogeneity and pseudogap phenomena in colossal magnetoresistive manganite La_{0.7}Ca_{0.3}MnO_{3}|C. R. Hughes,J. Shi,A. D. Beyer,N. -C. Yeh###
(1817264, 1817264)
 The PG<missing VAR>becomes strongly suppressed by applied magnetic fields at low temperatures whenthe tunneling spectra of LCMO become highly homogeneous.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Spin-polarized tunneling spectroscopic studies of the intrinsic heterogeneity and pseudogap phenomena in colossal magnetoresistive manganite La_{0.7}Ca_{0.3}MnO_{3}|C. R. Hughes,J. Shi,A. D. Beyer,N. -C. Yeh###
(1817302, 1817302)
 The PG<missing VAR>becomes strongly suppressed by applied magnetic fields at low temperatures whenthe tunneling spectra of LCMO become highly homogeneous.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Spin-polarized tunneling spectroscopic studies of the intrinsic heterogeneity and pseudogap phenomena in colossal magnetoresistive manganite La_{0.7}Ca_{0.3}MnO_{3}|C. R. Hughes,J. Shi,A. D. Beyer,N. -C. Yeh###
(1817324, 1817324)
 These findings suggestthat the occurrence PG<missing VAR> is associated with the electronic heterogeneity of themanganites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Electron phenomena in layered conductors|O. V. Kirichenko,Yu. A. Kolesnichenko,V. G. Peschansky###
(1817796, 1817796)
 The electron focusing signal and the point contact spectrum areextremely sensitive to the orientation of the magnetic field vector bsH inrelation to the layers with a high electrical conductivity.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Electron phenomena in layered conductors|O. V. Kirichenko,Yu. A. Kolesnichenko,V. G. Peschansky###
(1817828, 1817828)
 The values ofbsH for which the electron focusing signal has peaks can be used fordetermining velocities and extremal diameters for the open Fermi surface.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###AC Susceptibility Studies in Fe doped La0.65Ca0.35Mn1-xFexO3: Rare Earth Manganites|Wiqar Hussain Shah,S. K. Hasanain###
(1817930, 1817930)
AC Susceptibility Studies in Fe doped La0.65Ca0.35Mn1-xFexO3 Rare Earth Manganites.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 0.01, '<', 1],[273.0, -5, '%', 6],[472.0, 8, 'or', 11],[473.0, 10, 'K', 11],[500.0, 4, '%', 11]

Fe
###AC Susceptibility Studies in Fe doped La0.65Ca0.35Mn1-xFexO3: Rare Earth Manganites|Wiqar Hussain Shah,S. K. Hasanain###
(1817938, 1817938)
AC Susceptibility Studies in Fe doped La0.65Ca0.35Mn1-xFexO3 Rare Earth Manganites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 0.01, '<', 1],[265.0, -5, '%', 6],[464.0, 8, 'or', 11],[465.0, 10, 'K', 11],[492.0, 4, '%', 11]

La0.65Ca0.35Mn1-x
###AC Susceptibility Studies in Fe doped La0.65Ca0.35Mn1-xFexO3: Rare Earth Manganites|Wiqar Hussain Shah,S. K. Hasanain###
(1817942, 1817949)
AC Susceptibility Studies in Fe doped La0.65Ca0.35Mn1-xFexO3 Rare Earth Manganites.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[53.0, 0.01, '<', 1],[254.0, -5, '%', 6],[453.0, 8, 'or', 11],[454.0, 10, 'K', 11],[481.0, 4, '%', 11]

O3
###AC Susceptibility Studies in Fe doped La0.65Ca0.35Mn1-xFexO3: Rare Earth Manganites|Wiqar Hussain Shah,S. K. Hasanain###
(1817951, 1817952)
AC Susceptibility Studies in Fe doped La0.65Ca0.35Mn1-xFexO3 Rare Earth Manganites.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 0.01, '<', 1],[251.0, -5, '%', 6],[450.0, 8, 'or', 11],[451.0, 10, 'K', 11],[478.0, 4, '%', 11]

Fe
###AC Susceptibility Studies in Fe doped La0.65Ca0.35Mn1-xFexO3: Rare Earth Manganites|Wiqar Hussain Shah,S. K. Hasanain###
(1817967, 1817967)
 The effect of Fe substitution on Mn sites in the colossal magnetoresistivecompounds La0.65Ca0.35Mn1-xFexO3 with 0.01<x<missing VAR><0.1 have been studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 0.01, '<', 0],[236.0, -5, '%', 5],[435.0, 8, 'or', 10],[436.0, 10, 'K', 10],[463.0, 4, '%', 10]

Mn
###AC Susceptibility Studies in Fe doped La0.65Ca0.35Mn1-xFexO3: Rare Earth Manganites|Wiqar Hussain Shah,S. K. Hasanain###
(1817973, 1817973)
 The effect of Fe substitution on Mn sites in the colossal magnetoresistivecompounds La0.65Ca0.35Mn1-xFexO3 with 0.01<x<missing VAR><0.1 have been studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 0.01, '<', 0],[230.0, -5, '%', 5],[429.0, 8, 'or', 10],[430.0, 10, 'K', 10],[457.0, 4, '%', 10]

La0.65Ca0.35Mn1-x
###AC Susceptibility Studies in Fe doped La0.65Ca0.35Mn1-xFexO3: Rare Earth Manganites|Wiqar Hussain Shah,S. K. Hasanain###
(1817988, 1817995)
 The effect of Fe substitution on Mn sites in the colossal magnetoresistivecompounds La0.65Ca0.35Mn1-xFexO3 with 0.01<x<missing VAR><0.1 have been studied.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[7.0, 0.01, '<', 0],[208.0, -5, '%', 5],[407.0, 8, 'or', 10],[408.0, 10, 'K', 10],[435.0, 4, '%', 10]

O3
###AC Susceptibility Studies in Fe doped La0.65Ca0.35Mn1-xFexO3: Rare Earth Manganites|Wiqar Hussain Shah,S. K. Hasanain###
(1817997, 1817998)
 The effect of Fe substitution on Mn sites in the colossal magnetoresistivecompounds La0.65Ca0.35Mn1-xFexO3 with 0.01<x<missing VAR><0.1 have been studied.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 0.01, '<', 0],[205.0, -5, '%', 5],[404.0, 8, 'or', 10],[405.0, 10, 'K', 10],[432.0, 4, '%', 10]

C
###AC Susceptibility Studies in Fe doped La0.65Ca0.35Mn1-xFexO3: Rare Earth Manganites|Wiqar Hussain Shah,S. K. Hasanain###
(1818060, 1818060)
 The temperature range of CMR is greatly broadened with theaddition of Fe.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[58.0, 0.01, '<', 2],[143.0, -5, '%', 3],[342.0, 8, 'or', 8],[343.0, 10, 'K', 8],[370.0, 4, '%', 8]

Fe
###AC Susceptibility Studies in Fe doped La0.65Ca0.35Mn1-xFexO3: Rare Earth Manganites|Wiqar Hussain Shah,S. K. Hasanain###
(1818079, 1818079)
 The temperature range of CMR is greatly broadened with theaddition of Fe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 0.01, '<', 2],[124.0, -5, '%', 3],[323.0, 8, 'or', 8],[324.0, 10, 'K', 8],[351.0, 4, '%', 8]

Fe
###AC Susceptibility Studies in Fe doped La0.65Ca0.35Mn1-xFexO3: Rare Earth Manganites|Wiqar Hussain Shah,S. K. Hasanain###
(1818086, 1818086)
 Substitution of Fe induces a gradual transition from a metallicferromagnetic with a high Curie temperature (Tc270 K) to a ferromagneticinsulator with low Tc79 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 0.01, '<', 3],[117.0, -5, '%', 2],[316.0, 8, 'or', 7],[317.0, 10, 'K', 7],[344.0, 4, '%', 7]

Tc270
###AC Susceptibility Studies in Fe doped La0.65Ca0.35Mn1-xFexO3: Rare Earth Manganites|Wiqar Hussain Shah,S. K. Hasanain###
(1818116, 1818117)
 Substitution of Fe induces a gradual transition from a metallicferromagnetic with a high Curie temperature (Tc270 K) to a ferromagneticinsulator with low Tc79 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 0.01, '<', 3],[86.0, -5, '%', 2],[285.0, 8, 'or', 7],[286.0, 10, 'K', 7],[313.0, 4, '%', 7]

K
###AC Susceptibility Studies in Fe doped La0.65Ca0.35Mn1-xFexO3: Rare Earth Manganites|Wiqar Hussain Shah,S. K. Hasanain###
(1818119, 1818119)
 Substitution of Fe induces a gradual transition from a metallicferromagnetic with a high Curie temperature (Tc270 K) to a ferromagneticinsulator with low Tc79 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 0.01, '<', 3],[84.0, -5, '%', 2],[283.0, 8, 'or', 7],[284.0, 10, 'K', 7],[311.0, 4, '%', 7]

Tc79
###AC Susceptibility Studies in Fe doped La0.65Ca0.35Mn1-xFexO3: Rare Earth Manganites|Wiqar Hussain Shah,S. K. Hasanain###
(1818135, 1818136)
 Substitution of Fe induces a gradual transition from a metallicferromagnetic with a high Curie temperature (Tc270 K) to a ferromagneticinsulator with low Tc79 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 0.01, '<', 3],[67.0, -5, '%', 2],[266.0, 8, 'or', 7],[267.0, 10, 'K', 7],[294.0, 4, '%', 7]

K
###AC Susceptibility Studies in Fe doped La0.65Ca0.35Mn1-xFexO3: Rare Earth Manganites|Wiqar Hussain Shah,S. K. Hasanain###
(1818138, 1818138)
 Substitution of Fe induces a gradual transition from a metallicferromagnetic with a high Curie temperature (Tc270 K) to a ferromagneticinsulator with low Tc79 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 0.01, '<', 3],[65.0, -5, '%', 2],[264.0, 8, 'or', 7],[265.0, 10, 'K', 7],[292.0, 4, '%', 7]

Tc
###AC Susceptibility Studies in Fe doped La0.65Ca0.35Mn1-xFexO3: Rare Earth Manganites|Wiqar Hussain Shah,S. K. Hasanain###
(1818153, 1818153)
 Increased spin disorder and decrease of Tc withincreasing Fe content are evident.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 0.01, '<', 4],[50.0, -5, '%', 1],[249.0, 8, 'or', 6],[250.0, 10, 'K', 6],[277.0, 4, '%', 6]

Fe
###AC Susceptibility Studies in Fe doped La0.65Ca0.35Mn1-xFexO3: Rare Earth Manganites|Wiqar Hussain Shah,S. K. Hasanain###
(1818160, 1818160)
 Increased spin disorder and decrease of Tc withincreasing Fe content are evident.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 0.01, '<', 4],[43.0, -5, '%', 1],[242.0, 8, 'or', 6],[243.0, 10, 'K', 6],[270.0, 4, '%', 6]

Tc
###AC Susceptibility Studies in Fe doped La0.65Ca0.35Mn1-xFexO3: Rare Earth Manganites|Wiqar Hussain Shah,S. K. Hasanain###
(1818182, 1818182)
 The variations in the critical temperatureTc and magnetic moment show a rapid change at about 4-5% Fe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[180.0, 0.01, '<', 5],[21.0, -5, '%', 0],[220.0, 8, 'or', 5],[221.0, 10, 'K', 5],[248.0, 4, '%', 5]

Fe
###AC Susceptibility Studies in Fe doped La0.65Ca0.35Mn1-xFexO3: Rare Earth Manganites|Wiqar Hussain Shah,S. K. Hasanain###
(1818207, 1818207)
 The variations in the critical temperatureTc and magnetic moment show a rapid change at about 4-5% Fe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, 0.01, '<', 5],[4.0, -5, '%', 0],[195.0, 8, 'or', 5],[196.0, 10, 'K', 5],[223.0, 4, '%', 5]

Fe
###AC Susceptibility Studies in Fe doped La0.65Ca0.35Mn1-xFexO3: Rare Earth Manganites|Wiqar Hussain Shah,S. K. Hasanain###
(1818216, 1818216)
 The effect of Feis seen to be consistent with the disruption of the Mn-Mn exchange possibly dueto the formation of magnetic clusters.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[214.0, 0.01, '<', 6],[13.0, -5, '%', 1],[186.0, 8, 'or', 4],[187.0, 10, 'K', 4],[214.0, 4, '%', 4]

Mn
###AC Susceptibility Studies in Fe doped La0.65Ca0.35Mn1-xFexO3: Rare Earth Manganites|Wiqar Hussain Shah,S. K. Hasanain###
(1818239, 1818239)
 The effect of Feis seen to be consistent with the disruption of the Mn-Mn exchange possibly dueto the formation of magnetic clusters.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[237.0, 0.01, '<', 6],[36.0, -5, '%', 1],[163.0, 8, 'or', 4],[164.0, 10, 'K', 4],[191.0, 4, '%', 4]

Mn
###AC Susceptibility Studies in Fe doped La0.65Ca0.35Mn1-xFexO3: Rare Earth Manganites|Wiqar Hussain Shah,S. K. Hasanain###
(1818241, 1818241)
 The effect of Feis seen to be consistent with the disruption of the Mn-Mn exchange possibly dueto the formation of magnetic clusters.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[239.0, 0.01, '<', 6],[38.0, -5, '%', 1],[161.0, 8, 'or', 4],[162.0, 10, 'K', 4],[189.0, 4, '%', 4]

Fe
###AC Susceptibility Studies in Fe doped La0.65Ca0.35Mn1-xFexO3: Rare Earth Manganites|Wiqar Hussain Shah,S. K. Hasanain###
(1818339, 1818339)
 The shoulder in x<missing VAR> disappears at x<missing VAR>>0.04 Feconcentration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[337.0, 0.01, '<', 8],[136.0, -5, '%', 3],[63.0, 8, 'or', 2],[64.0, 10, 'K', 2],[91.0, 4, '%', 2]

Fe
###AC Susceptibility Studies in Fe doped La0.65Ca0.35Mn1-xFexO3: Rare Earth Manganites|Wiqar Hussain Shah,S. K. Hasanain###
(1818349, 1818349)
 With increasing Fe concentration the x<missing VAR> peak shift to T<T1/2(mid point of the transition temperature) and becomes broader.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[347.0, 0.01, '<', 9],[146.0, -5, '%', 4],[53.0, 8, 'or', 1],[54.0, 10, 'K', 1],[81.0, 4, '%', 1]

Fe
###AC Susceptibility Studies in Fe doped La0.65Ca0.35Mn1-xFexO3: Rare Earth Manganites|Wiqar Hussain Shah,S. K. Hasanain###
(1818457, 1818457)
 We also see increasing low temperature dissipation in more stronglyFe doped samples i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[455.0, 0.01, '<', 11],[254.0, -5, '%', 6],[55.0, 8, 'or', 1],[54.0, 10, 'K', 1],[27.0, 4, '%', 1]

Fe
###AC Susceptibility Studies in Fe doped La0.65Ca0.35Mn1-xFexO3: Rare Earth Manganites|Wiqar Hussain Shah,S. K. Hasanain###
(1818472, 1818472)
 increasing the Fe, leads to increased spin disorder anddissipation at low temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[470.0, 0.01, '<', 12],[269.0, -5, '%', 7],[70.0, 8, 'or', 2],[69.0, 10, 'K', 2],[42.0, 4, '%', 2]

Tc
###AC Susceptibility Studies in Fe doped La0.65Ca0.35Mn1-xFexO3: Rare Earth Manganites|Wiqar Hussain Shah,S. K. Hasanain###
(1818534, 1818534)
 The effect of the dc field is discussed interms of the suppression of spin fluctuations close to Tc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[532.0, 0.01, '<', 13],[331.0, -5, '%', 8],[132.0, 8, 'or', 3],[131.0, 10, 'K', 3],[104.0, 4, '%', 3]

Fe3
###AC Susceptibility Studies in Fe doped La0.65Ca0.35Mn1-xFexO3: Rare Earth Manganites|Wiqar Hussain Shah,S. K. Hasanain###
(1818548, 1818549)
 The same ionic radiiof Fe3 and Mn3 cause no structure changes in either series, yetferromagnetism has been consistently suppressed by Fe doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[546.0, 0.01, '<', 14],[345.0, -5, '%', 9],[146.0, 8, 'or', 4],[145.0, 10, 'K', 4],[118.0, 4, '%', 4]

Mn3
###AC Susceptibility Studies in Fe doped La0.65Ca0.35Mn1-xFexO3: Rare Earth Manganites|Wiqar Hussain Shah,S. K. Hasanain###
(1818553, 1818554)
 The same ionic radiiof Fe3 and Mn3 cause no structure changes in either series, yetferromagnetism has been consistently suppressed by Fe doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[551.0, 0.01, '<', 14],[350.0, -5, '%', 9],[151.0, 8, 'or', 4],[150.0, 10, 'K', 4],[123.0, 4, '%', 4]

Fe
###AC Susceptibility Studies in Fe doped La0.65Ca0.35Mn1-xFexO3: Rare Earth Manganites|Wiqar Hussain Shah,S. K. Hasanain###
(1818586, 1818586)
 The same ionic radiiof Fe3 and Mn3 cause no structure changes in either series, yetferromagnetism has been consistently suppressed by Fe doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[584.0, 0.01, '<', 14],[383.0, -5, '%', 9],[184.0, 8, 'or', 4],[183.0, 10, 'K', 4],[156.0, 4, '%', 4]

Fe
###AC Susceptibility Studies in Fe doped La0.65Ca0.35Mn1-xFexO3: Rare Earth Manganites|Wiqar Hussain Shah,S. K. Hasanain###
(1818595, 1818595)
 Doping with Febypasses the usually dominant lattice effects, but depopulate the hoppingelectrons and thus weakens the double exchange.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[593.0, 0.01, '<', 15],[392.0, -5, '%', 10],[193.0, 8, 'or', 5],[192.0, 10, 'K', 5],[165.0, 4, '%', 5]

Fe
###AC Susceptibility Studies in Fe doped La0.65Ca0.35Mn1-xFexO3: Rare Earth Manganites|Wiqar Hussain Shah,S. K. Hasanain###
(1818662, 1818662)
 The results were explained interms of the formation of magnetic clusters of Fe ions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[660.0, 0.01, '<', 16],[459.0, -5, '%', 11],[260.0, 8, 'or', 6],[259.0, 10, 'K', 6],[232.0, 4, '%', 6]

S
###Spin Transport and Relaxation in Graphene|Wei Han,K. M. McCreary,K. Pi,W. H. Wang,Yan Li,H. Wen,J. R. Chen,R. K. Kawakami###
(1818736, 1818736)
 The spin injection and transport in single layer graphene (SLG) wereinvestigated using nonlocal magnetoresistance (MR) measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 1, '%', 2],[129.0, 30, '%', 2],[221.0, 100, 'ps', 5],[289.0, 771, 'ps', 6],[298.0, 1.2, 'ns', 6],[301.0, 4, 'K', 6],[311.0, 6.2, 'ns', 6],[314.0, 20, 'K', 6]

Co/S
###Spin Transport and Relaxation in Graphene|Wei Han,K. M. McCreary,K. Pi,W. H. Wang,Yan Li,H. Wen,J. R. Chen,R. K. Kawakami###
(1818778, 1818780)
 Spin injectionwas performed using either transparent contacts (Co/SLG) or tunneling contacts(Co/MgO/SLG).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[74.0, 1, '%', 1],[85.0, 30, '%', 1],[177.0, 100, 'ps', 4],[245.0, 771, 'ps', 5],[254.0, 1.2, 'ns', 5],[257.0, 4, 'K', 5],[267.0, 6.2, 'ns', 5],[270.0, 20, 'K', 5]

Co/MgO/S
###Spin Transport and Relaxation in Graphene|Wei Han,K. M. McCreary,K. Pi,W. H. Wang,Yan Li,H. Wen,J. R. Chen,R. K. Kawakami###
(1818793, 1818798)
 Spin injectionwas performed using either transparent contacts (Co/SLG) or tunneling contacts(Co/MgO/SLG).
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[56.0, 1, '%', 1],[67.0, 30, '%', 1],[159.0, 100, 'ps', 4],[227.0, 771, 'ps', 5],[236.0, 1.2, 'ns', 5],[239.0, 4, 'K', 5],[249.0, 6.2, 'ns', 5],[252.0, 20, 'K', 5]

(Au)
###Spin Transport and Relaxation in Graphene|Wei Han,K. M. McCreary,K. Pi,W. H. Wang,Yan Li,H. Wen,J. R. Chen,R. K. Kawakami###
(1818964, 1818966)
 Theeffects of surface chemical doping showed that for spin lifetimes on the orderof 100 ps, impurity scattering (Au) was not the dominant mechanism for spinrelaxation.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 1, '%', 3],[99.0, 30, '%', 3],[7.0, 100, 'ps', 0],[59.0, 771, 'ps', 1],[68.0, 1.2, 'ns', 1],[71.0, 4, 'K', 1],[81.0, 6.2, 'ns', 1],[84.0, 20, 'K', 1]

S
###Spin Transport and Relaxation in Graphene|Wei Han,K. M. McCreary,K. Pi,W. H. Wang,Yan Li,H. Wen,J. R. Chen,R. K. Kawakami###
(1819041, 1819041)
 While using tunneling contacts to suppress the contact-induced spinrelaxation, we observed the spin lifetimes as long as 771 ps at roomtemperature, 1.2 ns at 4 K in SLG, and 6.2 ns at 20 K in bilayer graphene(BLG).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[187.0, 1, '%', 4],[176.0, 30, '%', 4],[84.0, 100, 'ps', 1],[16.0, 771, 'ps', 0],[7.0, 1.2, 'ns', 0],[4.0, 4, 'K', 0],[6.0, 6.2, 'ns', 0],[9.0, 20, 'K', 0]

B
###Spin Transport and Relaxation in Graphene|Wei Han,K. M. McCreary,K. Pi,W. H. Wang,Yan Li,H. Wen,J. R. Chen,R. K. Kawakami###
(1819060, 1819060)
 While using tunneling contacts to suppress the contact-induced spinrelaxation, we observed the spin lifetimes as long as 771 ps at roomtemperature, 1.2 ns at 4 K in SLG, and 6.2 ns at 20 K in bilayer graphene(BLG).
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[206.0, 1, '%', 4],[195.0, 30, '%', 4],[103.0, 100, 'ps', 1],[35.0, 771, 'ps', 0],[26.0, 1.2, 'ns', 0],[23.0, 4, 'K', 0],[13.0, 6.2, 'ns', 0],[10.0, 20, 'K', 0]

S
###Spin Transport and Relaxation in Graphene|Wei Han,K. M. McCreary,K. Pi,W. H. Wang,Yan Li,H. Wen,J. R. Chen,R. K. Kawakami###
(1819083, 1819083)
 Furthermore, contrasting spin relaxation behaviors were observed in SLGand BLG.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[229.0, 1, '%', 5],[218.0, 30, '%', 5],[126.0, 100, 'ps', 2],[58.0, 771, 'ps', 1],[49.0, 1.2, 'ns', 1],[46.0, 4, 'K', 1],[36.0, 6.2, 'ns', 1],[33.0, 20, 'K', 1]

B
###Spin Transport and Relaxation in Graphene|Wei Han,K. M. McCreary,K. Pi,W. H. Wang,Yan Li,H. Wen,J. R. Chen,R. K. Kawakami###
(1819090, 1819090)
 Furthermore, contrasting spin relaxation behaviors were observed in SLGand BLG.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[236.0, 1, '%', 5],[225.0, 30, '%', 5],[133.0, 100, 'ps', 2],[65.0, 771, 'ps', 1],[56.0, 1.2, 'ns', 1],[53.0, 4, 'K', 1],[43.0, 6.2, 'ns', 1],[40.0, 20, 'K', 1]

S
###Spin Transport and Relaxation in Graphene|Wei Han,K. M. McCreary,K. Pi,W. H. Wang,Yan Li,H. Wen,J. R. Chen,R. K. Kawakami###
(1819113, 1819113)
 We found that Elliot-Yafet spin relaxation dominated in SLG at lowtemperatures whereas Dyakonov-Perel spin relaxation dominated in BLG at lowtemperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[259.0, 1, '%', 6],[248.0, 30, '%', 6],[156.0, 100, 'ps', 3],[88.0, 771, 'ps', 2],[79.0, 1.2, 'ns', 2],[76.0, 4, 'K', 2],[66.0, 6.2, 'ns', 2],[63.0, 20, 'K', 2]

B
###Spin Transport and Relaxation in Graphene|Wei Han,K. M. McCreary,K. Pi,W. H. Wang,Yan Li,H. Wen,J. R. Chen,R. K. Kawakami###
(1819138, 1819138)
 We found that Elliot-Yafet spin relaxation dominated in SLG at lowtemperatures whereas Dyakonov-Perel spin relaxation dominated in BLG at lowtemperatures.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[284.0, 1, '%', 6],[273.0, 30, '%', 6],[181.0, 100, 'ps', 3],[113.0, 771, 'ps', 2],[104.0, 1.2, 'ns', 2],[101.0, 4, 'K', 2],[91.0, 6.2, 'ns', 2],[88.0, 20, 'K', 2]

S
###Spin Transport and Relaxation in Graphene|Wei Han,K. M. McCreary,K. Pi,W. H. Wang,Yan Li,H. Wen,J. R. Chen,R. K. Kawakami###
(1819166, 1819166)
 Gate tunable spin transport was studied using the SLG property ofgate tunable conductivity and incorporating different types of contacts(transparent and tunneling contacts).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[312.0, 1, '%', 7],[301.0, 30, '%', 7],[209.0, 100, 'ps', 4],[141.0, 771, 'ps', 3],[132.0, 1.2, 'ns', 3],[129.0, 4, 'K', 3],[119.0, 6.2, 'ns', 3],[116.0, 20, 'K', 3]

S
###Spin Transport and Relaxation in Graphene|Wei Han,K. M. McCreary,K. Pi,W. H. Wang,Yan Li,H. Wen,J. R. Chen,R. K. Kawakami###
(1819230, 1819230)
 Consistent with theoretical predictions,the nonlocal MR was proportional to the SLG conductivity for transparentcontacts and varied inversely with the SLG conductivity for tunneling contacts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[376.0, 1, '%', 8],[365.0, 30, '%', 8],[273.0, 100, 'ps', 5],[205.0, 771, 'ps', 4],[196.0, 1.2, 'ns', 4],[193.0, 4, 'K', 4],[183.0, 6.2, 'ns', 4],[180.0, 20, 'K', 4]

S
###Spin Transport and Relaxation in Graphene|Wei Han,K. M. McCreary,K. Pi,W. H. Wang,Yan Li,H. Wen,J. R. Chen,R. K. Kawakami###
(1819253, 1819253)
 Consistent with theoretical predictions,the nonlocal MR was proportional to the SLG conductivity for transparentcontacts and varied inversely with the SLG conductivity for tunneling contacts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[399.0, 1, '%', 8],[388.0, 30, '%', 8],[296.0, 100, 'ps', 5],[228.0, 771, 'ps', 4],[219.0, 1.2, 'ns', 4],[216.0, 4, 'K', 4],[206.0, 6.2, 'ns', 4],[203.0, 20, 'K', 4]

S
###Spin Transport and Relaxation in Graphene|Wei Han,K. M. McCreary,K. Pi,W. H. Wang,Yan Li,H. Wen,J. R. Chen,R. K. Kawakami###
(1819278, 1819278)
Finally, bipolar spin transport in SLG was studied and an electron-holeasymmetry was observed for SLG spin valves with transparent contacts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[424.0, 1, '%', 9],[413.0, 30, '%', 9],[321.0, 100, 'ps', 6],[253.0, 771, 'ps', 5],[244.0, 1.2, 'ns', 5],[241.0, 4, 'K', 5],[231.0, 6.2, 'ns', 5],[228.0, 20, 'K', 5]

S
###Spin Transport and Relaxation in Graphene|Wei Han,K. M. McCreary,K. Pi,W. H. Wang,Yan Li,H. Wen,J. R. Chen,R. K. Kawakami###
(1819303, 1819303)
Finally, bipolar spin transport in SLG was studied and an electron-holeasymmetry was observed for SLG spin valves with transparent contacts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[449.0, 1, '%', 9],[438.0, 30, '%', 9],[346.0, 100, 'ps', 6],[278.0, 771, 'ps', 5],[269.0, 1.2, 'ns', 5],[266.0, 4, 'K', 5],[256.0, 6.2, 'ns', 5],[253.0, 20, 'K', 5]

In
###Thermal and Electrical Properties of Multiwall Carbon Nanotubes|Wei Yi###
(1819345, 1819345)
 In this dissertation, thermal and electrical properties of aligned multiwallcarbon nanotubes (M<missing VAR>WNTs) prepared by thermal decomposition of hydrocarbons havebeen experimentally studied.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 2, ',', 3],[102.0, 3, ',', 4],[299.0, 4, ',', 7],[456.0, 5, ',', 10],[565.0, 20, 'mK', 12]

WN
###Thermal and Electrical Properties of Multiwall Carbon Nanotubes|Wei Yi###
(1819373, 1819374)
 In this dissertation, thermal and electrical properties of aligned multiwallcarbon nanotubes (M<missing VAR>WNTs) prepared by thermal decomposition of hydrocarbons havebeen experimentally studied.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 2, ',', 3],[73.0, 3, ',', 4],[270.0, 4, ',', 7],[427.0, 5, ',', 10],[536.0, 20, 'mK', 12]

In
###Thermal and Electrical Properties of Multiwall Carbon Nanotubes|Wei Yi###
(1819424, 1819424)
 In Ch2, sample preparation and characterizations are described.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 2, ',', 0],[23.0, 3, ',', 1],[220.0, 4, ',', 4],[377.0, 5, ',', 7],[486.0, 20, 'mK', 9]

In
###Thermal and Electrical Properties of Multiwall Carbon Nanotubes|Wei Yi###
(1819444, 1819444)
In Ch3, by using a self-heating 3-Omega method, the specific heat, thermaldiffusivity and thermal conductivity of M<missing VAR>WNTs are measured.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 2, ',', 1],[3.0, 3, ',', 0],[200.0, 4, ',', 3],[357.0, 5, ',', 6],[466.0, 20, 'mK', 8]

WN
###Thermal and Electrical Properties of Multiwall Carbon Nanotubes|Wei Yi###
(1819488, 1819489)
In Ch3, by using a self-heating 3-Omega method, the specific heat, thermaldiffusivity and thermal conductivity of M<missing VAR>WNTs are measured.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 2, ',', 1],[41.0, 3, ',', 0],[155.0, 4, ',', 3],[312.0, 5, ',', 6],[421.0, 20, 'mK', 8]

WN
###Thermal and Electrical Properties of Multiwall Carbon Nanotubes|Wei Yi###
(1819498, 1819499)
 M<missing VAR>WNTs of 20-40 nmdiameter show a linear specific heat over a temperature range of 10-300 K,suggesting that inter-wall coupling in M<missing VAR>WNTs is rather weak compared with thatof graphite.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 2, ',', 2],[51.0, 3, ',', 1],[145.0, 4, ',', 2],[302.0, 5, ',', 5],[411.0, 20, 'mK', 7]

K
###Thermal and Electrical Properties of Multiwall Carbon Nanotubes|Wei Yi###
(1819537, 1819537)
 M<missing VAR>WNTs of 20-40 nmdiameter show a linear specific heat over a temperature range of 10-300 K,suggesting that inter-wall coupling in M<missing VAR>WNTs is rather weak compared with thatof graphite.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 2, ',', 2],[90.0, 3, ',', 1],[107.0, 4, ',', 2],[264.0, 5, ',', 5],[373.0, 20, 'mK', 7]

WN
###Thermal and Electrical Properties of Multiwall Carbon Nanotubes|Wei Yi###
(1819554, 1819555)
 M<missing VAR>WNTs of 20-40 nmdiameter show a linear specific heat over a temperature range of 10-300 K,suggesting that inter-wall coupling in M<missing VAR>WNTs is rather weak compared with thatof graphite.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 2, ',', 2],[107.0, 3, ',', 1],[89.0, 4, ',', 2],[246.0, 5, ',', 5],[355.0, 20, 'mK', 7]

K
###Thermal and Electrical Properties of Multiwall Carbon Nanotubes|Wei Yi###
(1819608, 1819608)
 The thermal conductivity shows a crossover from linear temperaturedependence to a square law at 120K, with a rather low room-temperatureamplitude which may have resulted from structural defects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 2, ',', 3],[161.0, 3, ',', 2],[36.0, 4, ',', 1],[193.0, 5, ',', 4],[302.0, 20, 'mK', 6]

In
###Thermal and Electrical Properties of Multiwall Carbon Nanotubes|Wei Yi###
(1819641, 1819641)
 In Ch4, four-wiretunneling spectroscopy of junctions between M<missing VAR>WNTs and a normal metal ismeasured.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[214.0, 2, ',', 4],[194.0, 3, ',', 3],[3.0, 4, ',', 0],[160.0, 5, ',', 3],[269.0, 20, 'mK', 5]

WN
###Thermal and Electrical Properties of Multiwall Carbon Nanotubes|Wei Yi###
(1819663, 1819664)
 In Ch4, four-wiretunneling spectroscopy of junctions between M<missing VAR>WNTs and a normal metal ismeasured.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[236.0, 2, ',', 4],[216.0, 3, ',', 3],[19.0, 4, ',', 0],[137.0, 5, ',', 3],[246.0, 20, 'mK', 5]

WN
###Thermal and Electrical Properties of Multiwall Carbon Nanotubes|Wei Yi###
(1819692, 1819693)
 The Coulomb interactions in the M<missing VAR>WNTs give rise to a strong zero-biassuppression of tunneling density of states that can be fitted numerically withthe environmental quantum-fluctuation theory.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[265.0, 2, ',', 5],[245.0, 3, ',', 4],[48.0, 4, ',', 1],[108.0, 5, ',', 2],[217.0, 20, 'mK', 4]

At
###Thermal and Electrical Properties of Multiwall Carbon Nanotubes|Wei Yi###
(1819747, 1819747)
 At low temperatures, anasymmetric conductance anomaly near zero bias is observed, which is interpretedas Fano resonance in the strong tunneling regime.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[320.0, 2, ',', 6],[300.0, 3, ',', 5],[103.0, 4, ',', 2],[54.0, 5, ',', 1],[163.0, 20, 'mK', 3]

In
###Thermal and Electrical Properties of Multiwall Carbon Nanotubes|Wei Yi###
(1819798, 1819798)
 In Ch5, the thermoelectricpower (TEP) and longitudinal magnetoresistance (MR) of M<missing VAR>WNTs are measured.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[371.0, 2, ',', 7],[351.0, 3, ',', 6],[154.0, 4, ',', 3],[3.0, 5, ',', 0],[112.0, 20, 'mK', 2]

P
###Thermal and Electrical Properties of Multiwall Carbon Nanotubes|Wei Yi###
(1819814, 1819814)
 In Ch5, the thermoelectricpower (TEP) and longitudinal magnetoresistance (MR) of M<missing VAR>WNTs are measured.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[387.0, 2, ',', 7],[367.0, 3, ',', 6],[170.0, 4, ',', 3],[13.0, 5, ',', 0],[96.0, 20, 'mK', 2]

WN
###Thermal and Electrical Properties of Multiwall Carbon Nanotubes|Wei Yi###
(1819831, 1819832)
 In Ch5, the thermoelectricpower (TEP) and longitudinal magnetoresistance (MR) of M<missing VAR>WNTs are measured.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[404.0, 2, ',', 7],[384.0, 3, ',', 6],[187.0, 4, ',', 3],[30.0, 5, ',', 0],[78.0, 20, 'mK', 2]

P
###Thermal and Electrical Properties of Multiwall Carbon Nanotubes|Wei Yi###
(1819849, 1819849)
 Amoderate positive TEP with metallic-like linear temperature dependence isfound, suggesting that the electron-hole symmetry in metallic M<missing VAR>WNTs is broken.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[422.0, 2, ',', 8],[402.0, 3, ',', 7],[205.0, 4, ',', 4],[48.0, 5, ',', 1],[61.0, 20, 'mK', 1]

WN
###Thermal and Electrical Properties of Multiwall Carbon Nanotubes|Wei Yi###
(1819886, 1819887)
 Amoderate positive TEP with metallic-like linear temperature dependence isfound, suggesting that the electron-hole symmetry in metallic M<missing VAR>WNTs is broken.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[459.0, 2, ',', 8],[439.0, 3, ',', 7],[242.0, 4, ',', 4],[85.0, 5, ',', 1],[23.0, 20, 'mK', 1]

S
###Thermal and Electrical Properties of Multiwall Carbon Nanotubes|Wei Yi###
(1819963, 1819963)
 The period of oscillation agrees well with the period h<missing VAR>/2e<missing VAR> ofAltshuler-Aronov-Spivak (AAS) effect if only the outermost graphene wallcontributes to conductance, clearly indicating quantum-interference effects atlow temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[536.0, 2, ',', 10],[516.0, 3, ',', 9],[319.0, 4, ',', 6],[162.0, 5, ',', 3],[53.0, 20, 'mK', 1]

CeIr2B2
###Ferromagnetic Ordering in CeIr2B2: Transport, magnetization, specific heat and NMR studies|A. Prasad,V. K. Anand,U. B. Paramanik,Z. Hossain,R. Sarkar,N. Oeschler,M. Baenitz,C. Geibel###
(1820032, 1820036)
Ferromagnetic Ordering in CeIr2B2 Transport, magnetization, specific heat and NMR studies.
Featurization terminated normally.
0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 11, 'B', 2],[183.0, 5.1, 'K', 3],[228.0, 0.4, 'K', 5],[275.0, 180, 'mJ', 5],[297.0, 2.5, 'K', 5],[350.0, 2.54, 'states', 6],[406.0, 4, 'f', 8],[433.0, 4, 'K', 9],[508.0, 3.5, 'K', 10],[558.0, 5, 'K', 11],[563.0, 5, 'K', 12],[582.0, 10, 'T', 12],[586.0, 2, 'K', 12],[600.0, 3.5, 'T', 12],[667.0, 30, 'K', 14],[680.0, 10, 'K', 14],[715.0, 11, 'B', 15],[739.0, 40, 'K', 15]

N
###Ferromagnetic Ordering in CeIr2B2: Transport, magnetization, specific heat and NMR studies|A. Prasad,V. K. Anand,U. B. Paramanik,Z. Hossain,R. Sarkar,N. Oeschler,M. Baenitz,C. Geibel###
(1820050, 1820050)
Ferromagnetic Ordering in CeIr2B2 Transport, magnetization, specific heat and NMR studies.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 11, 'B', 2],[169.0, 5.1, 'K', 3],[214.0, 0.4, 'K', 5],[261.0, 180, 'mJ', 5],[283.0, 2.5, 'K', 5],[336.0, 2.54, 'states', 6],[392.0, 4, 'f', 8],[419.0, 4, 'K', 9],[494.0, 3.5, 'K', 10],[544.0, 5, 'K', 11],[549.0, 5, 'K', 12],[568.0, 10, 'T', 12],[572.0, 2, 'K', 12],[586.0, 3.5, 'T', 12],[653.0, 30, 'K', 14],[666.0, 10, 'K', 14],[701.0, 11, 'B', 15],[725.0, 40, 'K', 15]

CeIr2B2
###Ferromagnetic Ordering in CeIr2B2: Transport, magnetization, specific heat and NMR studies|A. Prasad,V. K. Anand,U. B. Paramanik,Z. Hossain,R. Sarkar,N. Oeschler,M. Baenitz,C. Geibel###
(1820073, 1820077)
 We present a complete characterization of ferromagnetic system CeIr2B2 usingpowder x<missing VAR>-ray diffraction XRD, magnetic susceptibility chi(T), isothermalmagnetization M<missing VAR>(H), specific heat C(T), electrical resistivity rho(T<missing VAR>,H), andthermoelectric power S(T) measurements.
Featurization terminated normally.
0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 11, 'B', 1],[142.0, 5.1, 'K', 2],[187.0, 0.4, 'K', 4],[234.0, 180, 'mJ', 4],[256.0, 2.5, 'K', 4],[309.0, 2.54, 'states', 5],[365.0, 4, 'f', 7],[392.0, 4, 'K', 8],[467.0, 3.5, 'K', 9],[517.0, 5, 'K', 10],[522.0, 5, 'K', 11],[541.0, 10, 'T', 11],[545.0, 2, 'K', 11],[559.0, 3.5, 'T', 11],[626.0, 30, 'K', 13],[639.0, 10, 'K', 13],[674.0, 11, 'B', 14],[698.0, 40, 'K', 14]

(H)
###Ferromagnetic Ordering in CeIr2B2: Transport, magnetization, specific heat and NMR studies|A. Prasad,V. K. Anand,U. B. Paramanik,Z. Hossain,R. Sarkar,N. Oeschler,M. Baenitz,C. Geibel###
(1820111, 1820113)
 We present a complete characterization of ferromagnetic system CeIr2B2 usingpowder x<missing VAR>-ray diffraction XRD, magnetic susceptibility chi(T), isothermalmagnetization M<missing VAR>(H), specific heat C(T), electrical resistivity rho(T<missing VAR>,H), andthermoelectric power S(T) measurements.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 11, 'B', 1],[106.0, 5.1, 'K', 2],[151.0, 0.4, 'K', 4],[198.0, 180, 'mJ', 4],[220.0, 2.5, 'K', 4],[273.0, 2.54, 'states', 5],[329.0, 4, 'f', 7],[356.0, 4, 'K', 8],[431.0, 3.5, 'K', 9],[481.0, 5, 'K', 10],[486.0, 5, 'K', 11],[505.0, 10, 'T', 11],[509.0, 2, 'K', 11],[523.0, 3.5, 'T', 11],[590.0, 30, 'K', 13],[603.0, 10, 'K', 13],[638.0, 11, 'B', 14],[662.0, 40, 'K', 14]

C
###Ferromagnetic Ordering in CeIr2B2: Transport, magnetization, specific heat and NMR studies|A. Prasad,V. K. Anand,U. B. Paramanik,Z. Hossain,R. Sarkar,N. Oeschler,M. Baenitz,C. Geibel###
(1820120, 1820120)
 We present a complete characterization of ferromagnetic system CeIr2B2 usingpowder x<missing VAR>-ray diffraction XRD, magnetic susceptibility chi(T), isothermalmagnetization M<missing VAR>(H), specific heat C(T), electrical resistivity rho(T<missing VAR>,H), andthermoelectric power S(T) measurements.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 11, 'B', 1],[99.0, 5.1, 'K', 2],[144.0, 0.4, 'K', 4],[191.0, 180, 'mJ', 4],[213.0, 2.5, 'K', 4],[266.0, 2.54, 'states', 5],[322.0, 4, 'f', 7],[349.0, 4, 'K', 8],[424.0, 3.5, 'K', 9],[474.0, 5, 'K', 10],[479.0, 5, 'K', 11],[498.0, 10, 'T', 11],[502.0, 2, 'K', 11],[516.0, 3.5, 'T', 11],[583.0, 30, 'K', 13],[596.0, 10, 'K', 13],[631.0, 11, 'B', 14],[655.0, 40, 'K', 14]

H
###Ferromagnetic Ordering in CeIr2B2: Transport, magnetization, specific heat and NMR studies|A. Prasad,V. K. Anand,U. B. Paramanik,Z. Hossain,R. Sarkar,N. Oeschler,M. Baenitz,C. Geibel###
(1820134, 1820134)
 We present a complete characterization of ferromagnetic system CeIr2B2 usingpowder x<missing VAR>-ray diffraction XRD, magnetic susceptibility chi(T), isothermalmagnetization M<missing VAR>(H), specific heat C(T), electrical resistivity rho(T<missing VAR>,H), andthermoelectric power S(T) measurements.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 11, 'B', 1],[85.0, 5.1, 'K', 2],[130.0, 0.4, 'K', 4],[177.0, 180, 'mJ', 4],[199.0, 2.5, 'K', 4],[252.0, 2.54, 'states', 5],[308.0, 4, 'f', 7],[335.0, 4, 'K', 8],[410.0, 3.5, 'K', 9],[460.0, 5, 'K', 10],[465.0, 5, 'K', 11],[484.0, 10, 'T', 11],[488.0, 2, 'K', 11],[502.0, 3.5, 'T', 11],[569.0, 30, 'K', 13],[582.0, 10, 'K', 13],[617.0, 11, 'B', 14],[641.0, 40, 'K', 14]

S
###Ferromagnetic Ordering in CeIr2B2: Transport, magnetization, specific heat and NMR studies|A. Prasad,V. K. Anand,U. B. Paramanik,Z. Hossain,R. Sarkar,N. Oeschler,M. Baenitz,C. Geibel###
(1820145, 1820145)
 We present a complete characterization of ferromagnetic system CeIr2B2 usingpowder x<missing VAR>-ray diffraction XRD, magnetic susceptibility chi(T), isothermalmagnetization M<missing VAR>(H), specific heat C(T), electrical resistivity rho(T<missing VAR>,H), andthermoelectric power S(T) measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 11, 'B', 1],[74.0, 5.1, 'K', 2],[119.0, 0.4, 'K', 4],[166.0, 180, 'mJ', 4],[188.0, 2.5, 'K', 4],[241.0, 2.54, 'states', 5],[297.0, 4, 'f', 7],[324.0, 4, 'K', 8],[399.0, 3.5, 'K', 9],[449.0, 5, 'K', 10],[454.0, 5, 'K', 11],[473.0, 10, 'T', 11],[477.0, 2, 'K', 11],[491.0, 3.5, 'T', 11],[558.0, 30, 'K', 13],[571.0, 10, 'K', 13],[606.0, 11, 'B', 14],[630.0, 40, 'K', 14]

N
###Ferromagnetic Ordering in CeIr2B2: Transport, magnetization, specific heat and NMR studies|A. Prasad,V. K. Anand,U. B. Paramanik,Z. Hossain,R. Sarkar,N. Oeschler,M. Baenitz,C. Geibel###
(1820156, 1820156)
 Furthermore 11B NMR study was performedto probe the magnetism on a microscopic scale.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 11, 'B', 0],[63.0, 5.1, 'K', 1],[108.0, 0.4, 'K', 3],[155.0, 180, 'mJ', 3],[177.0, 2.5, 'K', 3],[230.0, 2.54, 'states', 4],[286.0, 4, 'f', 6],[313.0, 4, 'K', 7],[388.0, 3.5, 'K', 8],[438.0, 5, 'K', 9],[443.0, 5, 'K', 10],[462.0, 10, 'T', 10],[466.0, 2, 'K', 10],[480.0, 3.5, 'T', 10],[547.0, 30, 'K', 12],[560.0, 10, 'K', 12],[595.0, 11, 'B', 13],[619.0, 40, 'K', 13]

C
###Ferromagnetic Ordering in CeIr2B2: Transport, magnetization, specific heat and NMR studies|A. Prasad,V. K. Anand,U. B. Paramanik,Z. Hossain,R. Sarkar,N. Oeschler,M. Baenitz,C. Geibel###
(1820192, 1820192)
 The chi(T), C(T) and rho(T) dataconfirm bulk ferromagnetic ordering with Tc  5.1 K.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 11, 'B', 1],[27.0, 5.1, 'K', 0],[72.0, 0.4, 'K', 2],[119.0, 180, 'mJ', 2],[141.0, 2.5, 'K', 2],[194.0, 2.54, 'states', 3],[250.0, 4, 'f', 5],[277.0, 4, 'K', 6],[352.0, 3.5, 'K', 7],[402.0, 5, 'K', 8],[407.0, 5, 'K', 9],[426.0, 10, 'T', 9],[430.0, 2, 'K', 9],[444.0, 3.5, 'T', 9],[511.0, 30, 'K', 11],[524.0, 10, 'K', 11],[559.0, 11, 'B', 12],[583.0, 40, 'K', 12]

Tc
###Ferromagnetic Ordering in CeIr2B2: Transport, magnetization, specific heat and NMR studies|A. Prasad,V. K. Anand,U. B. Paramanik,Z. Hossain,R. Sarkar,N. Oeschler,M. Baenitz,C. Geibel###
(1820217, 1820217)
 The chi(T), C(T) and rho(T) dataconfirm bulk ferromagnetic ordering with Tc  5.1 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 11, 'B', 1],[2.0, 5.1, 'K', 0],[47.0, 0.4, 'K', 2],[94.0, 180, 'mJ', 2],[116.0, 2.5, 'K', 2],[169.0, 2.54, 'states', 3],[225.0, 4, 'f', 5],[252.0, 4, 'K', 6],[327.0, 3.5, 'K', 7],[377.0, 5, 'K', 8],[382.0, 5, 'K', 9],[401.0, 10, 'T', 9],[405.0, 2, 'K', 9],[419.0, 3.5, 'T', 9],[486.0, 30, 'K', 11],[499.0, 10, 'K', 11],[534.0, 11, 'B', 12],[558.0, 40, 'K', 12]

Ce
###Ferromagnetic Ordering in CeIr2B2: Transport, magnetization, specific heat and NMR studies|A. Prasad,V. K. Anand,U. B. Paramanik,Z. Hossain,R. Sarkar,N. Oeschler,M. Baenitz,C. Geibel###
(1820222, 1820222)
 Ce ions in CeIr2B2 are instable trivalent state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 11, 'B', 2],[3.0, 5.1, 'K', 1],[42.0, 0.4, 'K', 1],[89.0, 180, 'mJ', 1],[111.0, 2.5, 'K', 1],[164.0, 2.54, 'states', 2],[220.0, 4, 'f', 4],[247.0, 4, 'K', 5],[322.0, 3.5, 'K', 6],[372.0, 5, 'K', 7],[377.0, 5, 'K', 8],[396.0, 10, 'T', 8],[400.0, 2, 'K', 8],[414.0, 3.5, 'T', 8],[481.0, 30, 'K', 10],[494.0, 10, 'K', 10],[529.0, 11, 'B', 11],[553.0, 40, 'K', 11]

CeIr2B2
###Ferromagnetic Ordering in CeIr2B2: Transport, magnetization, specific heat and NMR studies|A. Prasad,V. K. Anand,U. B. Paramanik,Z. Hossain,R. Sarkar,N. Oeschler,M. Baenitz,C. Geibel###
(1820228, 1820232)
 Ce ions in CeIr2B2 are instable trivalent state.
Featurization terminated normally.
0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 11, 'B', 2],[9.0, 5.1, 'K', 1],[32.0, 0.4, 'K', 1],[79.0, 180, 'mJ', 1],[101.0, 2.5, 'K', 1],[154.0, 2.54, 'states', 2],[210.0, 4, 'f', 4],[237.0, 4, 'K', 5],[312.0, 3.5, 'K', 6],[362.0, 5, 'K', 7],[367.0, 5, 'K', 8],[386.0, 10, 'T', 8],[390.0, 2, 'K', 8],[404.0, 3.5, 'T', 8],[471.0, 30, 'K', 10],[484.0, 10, 'K', 10],[519.0, 11, 'B', 11],[543.0, 40, 'K', 11]

C
###Ferromagnetic Ordering in CeIr2B2: Transport, magnetization, specific heat and NMR studies|A. Prasad,V. K. Anand,U. B. Paramanik,Z. Hossain,R. Sarkar,N. Oeschler,M. Baenitz,C. Geibel###
(1820252, 1820252)
 Our low-temperature C(T) data measured down to 0.4 Kyield Sommerfeld coefficient gamma  73(4) mJ/molK2 which is much smaller thanthe previously reported value of gamma  180 mJ/molK2 deduced from the specificheat measurement down to 2.5 K.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 11, 'B', 3],[33.0, 5.1, 'K', 2],[12.0, 0.4, 'K', 0],[59.0, 180, 'mJ', 0],[81.0, 2.5, 'K', 0],[134.0, 2.54, 'states', 1],[190.0, 4, 'f', 3],[217.0, 4, 'K', 4],[292.0, 3.5, 'K', 5],[342.0, 5, 'K', 6],[347.0, 5, 'K', 7],[366.0, 10, 'T', 7],[370.0, 2, 'K', 7],[384.0, 3.5, 'T', 7],[451.0, 30, 'K', 9],[464.0, 10, 'K', 9],[499.0, 11, 'B', 10],[523.0, 40, 'K', 10]

K2
###Ferromagnetic Ordering in CeIr2B2: Transport, magnetization, specific heat and NMR studies|A. Prasad,V. K. Anand,U. B. Paramanik,Z. Hossain,R. Sarkar,N. Oeschler,M. Baenitz,C. Geibel###
(1820285, 1820286)
 Our low-temperature C(T) data measured down to 0.4 Kyield Sommerfeld coefficient gamma  73(4) mJ/molK2 which is much smaller thanthe previously reported value of gamma  180 mJ/molK2 deduced from the specificheat measurement down to 2.5 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 11, 'B', 3],[66.0, 5.1, 'K', 2],[21.0, 0.4, 'K', 0],[25.0, 180, 'mJ', 0],[47.0, 2.5, 'K', 0],[100.0, 2.54, 'states', 1],[156.0, 4, 'f', 3],[183.0, 4, 'K', 4],[258.0, 3.5, 'K', 5],[308.0, 5, 'K', 6],[313.0, 5, 'K', 7],[332.0, 10, 'T', 7],[336.0, 2, 'K', 7],[350.0, 3.5, 'T', 7],[417.0, 30, 'K', 9],[430.0, 10, 'K', 9],[465.0, 11, 'B', 10],[489.0, 40, 'K', 10]

K2
###Ferromagnetic Ordering in CeIr2B2: Transport, magnetization, specific heat and NMR studies|A. Prasad,V. K. Anand,U. B. Paramanik,Z. Hossain,R. Sarkar,N. Oeschler,M. Baenitz,C. Geibel###
(1820314, 1820315)
 Our low-temperature C(T) data measured down to 0.4 Kyield Sommerfeld coefficient gamma  73(4) mJ/molK2 which is much smaller thanthe previously reported value of gamma  180 mJ/molK2 deduced from the specificheat measurement down to 2.5 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 11, 'B', 3],[95.0, 5.1, 'K', 2],[50.0, 0.4, 'K', 0],[3.0, 180, 'mJ', 0],[18.0, 2.5, 'K', 0],[71.0, 2.54, 'states', 1],[127.0, 4, 'f', 3],[154.0, 4, 'K', 4],[229.0, 3.5, 'K', 5],[279.0, 5, 'K', 6],[284.0, 5, 'K', 7],[303.0, 10, 'T', 7],[307.0, 2, 'K', 7],[321.0, 3.5, 'T', 7],[388.0, 30, 'K', 9],[401.0, 10, 'K', 9],[436.0, 11, 'B', 10],[460.0, 40, 'K', 10]

LaIr2B2
###Ferromagnetic Ordering in CeIr2B2: Transport, magnetization, specific heat and NMR studies|A. Prasad,V. K. Anand,U. B. Paramanik,Z. Hossain,R. Sarkar,N. Oeschler,M. Baenitz,C. Geibel###
(1820338, 1820342)
 For LaIr2B2 gamma  6(1) mJ/molK2 which impliesthe density of states at the Fermi level D(EF)  2.54 states/(e<missing VAR>V f.u.
Featurization terminated normally.
0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[184.0, 11, 'B', 4],[119.0, 5.1, 'K', 3],[74.0, 0.4, 'K', 1],[27.0, 180, 'mJ', 1],[5.0, 2.5, 'K', 1],[44.0, 2.54, 'states', 0],[100.0, 4, 'f', 2],[127.0, 4, 'K', 3],[202.0, 3.5, 'K', 4],[252.0, 5, 'K', 5],[257.0, 5, 'K', 6],[276.0, 10, 'T', 6],[280.0, 2, 'K', 6],[294.0, 3.5, 'T', 6],[361.0, 30, 'K', 8],[374.0, 10, 'K', 8],[409.0, 11, 'B', 9],[433.0, 40, 'K', 9]

K2
###Ferromagnetic Ordering in CeIr2B2: Transport, magnetization, specific heat and NMR studies|A. Prasad,V. K. Anand,U. B. Paramanik,Z. Hossain,R. Sarkar,N. Oeschler,M. Baenitz,C. Geibel###
(1820356, 1820357)
 For LaIr2B2 gamma  6(1) mJ/molK2 which impliesthe density of states at the Fermi level D(EF)  2.54 states/(e<missing VAR>V f.u.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[202.0, 11, 'B', 4],[137.0, 5.1, 'K', 3],[92.0, 0.4, 'K', 1],[45.0, 180, 'mJ', 1],[23.0, 2.5, 'K', 1],[29.0, 2.54, 'states', 0],[85.0, 4, 'f', 2],[112.0, 4, 'K', 3],[187.0, 3.5, 'K', 4],[237.0, 5, 'K', 5],[242.0, 5, 'K', 6],[261.0, 10, 'T', 6],[265.0, 2, 'K', 6],[279.0, 3.5, 'T', 6],[346.0, 30, 'K', 8],[359.0, 10, 'K', 8],[394.0, 11, 'B', 9],[418.0, 40, 'K', 9]

F
###Ferromagnetic Ordering in CeIr2B2: Transport, magnetization, specific heat and NMR studies|A. Prasad,V. K. Anand,U. B. Paramanik,Z. Hossain,R. Sarkar,N. Oeschler,M. Baenitz,C. Geibel###
(1820383, 1820383)
 For LaIr2B2 gamma  6(1) mJ/molK2 which impliesthe density of states at the Fermi level D(EF)  2.54 states/(e<missing VAR>V f.u.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[229.0, 11, 'B', 4],[164.0, 5.1, 'K', 3],[119.0, 0.4, 'K', 1],[72.0, 180, 'mJ', 1],[50.0, 2.5, 'K', 1],[3.0, 2.54, 'states', 0],[59.0, 4, 'f', 2],[86.0, 4, 'K', 3],[161.0, 3.5, 'K', 4],[211.0, 5, 'K', 5],[216.0, 5, 'K', 6],[235.0, 10, 'T', 6],[239.0, 2, 'K', 6],[253.0, 3.5, 'T', 6],[320.0, 30, 'K', 8],[333.0, 10, 'K', 8],[368.0, 11, 'B', 9],[392.0, 40, 'K', 9]

V
###Ferromagnetic Ordering in CeIr2B2: Transport, magnetization, specific heat and NMR studies|A. Prasad,V. K. Anand,U. B. Paramanik,Z. Hossain,R. Sarkar,N. Oeschler,M. Baenitz,C. Geibel###
(1820390, 1820390)
 For LaIr2B2 gamma  6(1) mJ/molK2 which impliesthe density of states at the Fermi level D(EF)  2.54 states/(e<missing VAR>V f.u.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[236.0, 11, 'B', 4],[171.0, 5.1, 'K', 3],[126.0, 0.4, 'K', 1],[79.0, 180, 'mJ', 1],[57.0, 2.5, 'K', 1],[4.0, 2.54, 'states', 0],[52.0, 4, 'f', 2],[79.0, 4, 'K', 3],[154.0, 3.5, 'K', 4],[204.0, 5, 'K', 5],[209.0, 5, 'K', 6],[228.0, 10, 'T', 6],[232.0, 2, 'K', 6],[246.0, 3.5, 'T', 6],[313.0, 30, 'K', 8],[326.0, 10, 'K', 8],[361.0, 11, 'B', 9],[385.0, 40, 'K', 9]

CeIr2B2
###Ferromagnetic Ordering in CeIr2B2: Transport, magnetization, specific heat and NMR studies|A. Prasad,V. K. Anand,U. B. Paramanik,Z. Hossain,R. Sarkar,N. Oeschler,M. Baenitz,C. Geibel###
(1820448, 1820452)
 The renormalization factor for quasi-particle density ofstates and hence for quasi-particle mass due to 4f correlations in CeIr2B2 is12.
Featurization terminated normally.
0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[294.0, 11, 'B', 6],[229.0, 5.1, 'K', 5],[184.0, 0.4, 'K', 3],[137.0, 180, 'mJ', 3],[115.0, 2.5, 'K', 3],[62.0, 2.54, 'states', 2],[6.0, 4, 'f', 0],[17.0, 4, 'K', 1],[92.0, 3.5, 'K', 2],[142.0, 5, 'K', 3],[147.0, 5, 'K', 4],[166.0, 10, 'T', 4],[170.0, 2, 'K', 4],[184.0, 3.5, 'T', 4],[251.0, 30, 'K', 6],[264.0, 10, 'K', 6],[299.0, 11, 'B', 7],[323.0, 40, 'K', 7]

K
###Ferromagnetic Ordering in CeIr2B2: Transport, magnetization, specific heat and NMR studies|A. Prasad,V. K. Anand,U. B. Paramanik,Z. Hossain,R. Sarkar,N. Oeschler,M. Baenitz,C. Geibel###
(1820467, 1820467)
 The Kondo temperature T<missing VAR>K  4 K is estimated from the jump in specific heatof CeIr2B2 at Tc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[313.0, 11, 'B', 7],[248.0, 5.1, 'K', 6],[203.0, 0.4, 'K', 4],[156.0, 180, 'mJ', 4],[134.0, 2.5, 'K', 4],[81.0, 2.54, 'states', 3],[25.0, 4, 'f', 1],[2.0, 4, 'K', 0],[77.0, 3.5, 'K', 1],[127.0, 5, 'K', 2],[132.0, 5, 'K', 3],[151.0, 10, 'T', 3],[155.0, 2, 'K', 3],[169.0, 3.5, 'T', 3],[236.0, 30, 'K', 5],[249.0, 10, 'K', 5],[284.0, 11, 'B', 6],[308.0, 40, 'K', 6]

CeIr2B2
###Ferromagnetic Ordering in CeIr2B2: Transport, magnetization, specific heat and NMR studies|A. Prasad,V. K. Anand,U. B. Paramanik,Z. Hossain,R. Sarkar,N. Oeschler,M. Baenitz,C. Geibel###
(1820490, 1820494)
 The Kondo temperature T<missing VAR>K  4 K is estimated from the jump in specific heatof CeIr2B2 at Tc.
Featurization terminated normally.
0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[336.0, 11, 'B', 7],[271.0, 5.1, 'K', 6],[226.0, 0.4, 'K', 4],[179.0, 180, 'mJ', 4],[157.0, 2.5, 'K', 4],[104.0, 2.54, 'states', 3],[48.0, 4, 'f', 1],[21.0, 4, 'K', 0],[50.0, 3.5, 'K', 1],[100.0, 5, 'K', 2],[105.0, 5, 'K', 3],[124.0, 10, 'T', 3],[128.0, 2, 'K', 3],[142.0, 3.5, 'T', 3],[209.0, 30, 'K', 5],[222.0, 10, 'K', 5],[257.0, 11, 'B', 6],[281.0, 40, 'K', 6]

Tc
###Ferromagnetic Ordering in CeIr2B2: Transport, magnetization, specific heat and NMR studies|A. Prasad,V. K. Anand,U. B. Paramanik,Z. Hossain,R. Sarkar,N. Oeschler,M. Baenitz,C. Geibel###
(1820498, 1820498)
 The Kondo temperature T<missing VAR>K  4 K is estimated from the jump in specific heatof CeIr2B2 at Tc.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[344.0, 11, 'B', 7],[279.0, 5.1, 'K', 6],[234.0, 0.4, 'K', 4],[187.0, 180, 'mJ', 4],[165.0, 2.5, 'K', 4],[112.0, 2.54, 'states', 3],[56.0, 4, 'f', 1],[29.0, 4, 'K', 0],[46.0, 3.5, 'K', 1],[96.0, 5, 'K', 2],[101.0, 5, 'K', 3],[120.0, 10, 'T', 3],[124.0, 2, 'K', 3],[138.0, 3.5, 'T', 3],[205.0, 30, 'K', 5],[218.0, 10, 'K', 5],[253.0, 11, 'B', 6],[277.0, 40, 'K', 6]

C
###Ferromagnetic Ordering in CeIr2B2: Transport, magnetization, specific heat and NMR studies|A. Prasad,V. K. Anand,U. B. Paramanik,Z. Hossain,R. Sarkar,N. Oeschler,M. Baenitz,C. Geibel###
(1820503, 1820503)
 Both C(T) and rho(T) data exhibit gapped-magnon behavior inmagnetically ordered state with an energy gap Eg  3.5 K.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[349.0, 11, 'B', 8],[284.0, 5.1, 'K', 7],[239.0, 0.4, 'K', 5],[192.0, 180, 'mJ', 5],[170.0, 2.5, 'K', 5],[117.0, 2.54, 'states', 4],[61.0, 4, 'f', 2],[34.0, 4, 'K', 1],[41.0, 3.5, 'K', 0],[91.0, 5, 'K', 1],[96.0, 5, 'K', 2],[115.0, 10, 'T', 2],[119.0, 2, 'K', 2],[133.0, 3.5, 'T', 2],[200.0, 30, 'K', 4],[213.0, 10, 'K', 4],[248.0, 11, 'B', 5],[272.0, 40, 'K', 5]

H
###Ferromagnetic Ordering in CeIr2B2: Transport, magnetization, specific heat and NMR studies|A. Prasad,V. K. Anand,U. B. Paramanik,Z. Hossain,R. Sarkar,N. Oeschler,M. Baenitz,C. Geibel###
(1820566, 1820566)
 The rho data as afunction of magnetic field H indicate a large negative magnetoresistance (MR)which is highest for T<missing VAR>  5 K.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[412.0, 11, 'B', 9],[347.0, 5.1, 'K', 8],[302.0, 0.4, 'K', 6],[255.0, 180, 'mJ', 6],[233.0, 2.5, 'K', 6],[180.0, 2.54, 'states', 5],[124.0, 4, 'f', 3],[97.0, 4, 'K', 2],[22.0, 3.5, 'K', 1],[28.0, 5, 'K', 0],[33.0, 5, 'K', 1],[52.0, 10, 'T', 1],[56.0, 2, 'K', 1],[70.0, 3.5, 'T', 1],[137.0, 30, 'K', 3],[150.0, 10, 'K', 3],[185.0, 11, 'B', 4],[209.0, 40, 'K', 4]

H
###Ferromagnetic Ordering in CeIr2B2: Transport, magnetization, specific heat and NMR studies|A. Prasad,V. K. Anand,U. B. Paramanik,Z. Hossain,R. Sarkar,N. Oeschler,M. Baenitz,C. Geibel###
(1820634, 1820634)
While at 5 K the negative MR keeps on increasingup to 10 T, at 2 K an upturn is observed near H  3.5 T.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[480.0, 11, 'B', 10],[415.0, 5.1, 'K', 9],[370.0, 0.4, 'K', 7],[323.0, 180, 'mJ', 7],[301.0, 2.5, 'K', 7],[248.0, 2.54, 'states', 6],[192.0, 4, 'f', 4],[165.0, 4, 'K', 3],[90.0, 3.5, 'K', 2],[40.0, 5, 'K', 1],[35.0, 5, 'K', 0],[16.0, 10, 'T', 0],[12.0, 2, 'K', 0],[2.0, 3.5, 'T', 0],[69.0, 30, 'K', 2],[82.0, 10, 'K', 2],[117.0, 11, 'B', 3],[141.0, 40, 'K', 3]

S
###Ferromagnetic Ordering in CeIr2B2: Transport, magnetization, specific heat and NMR studies|A. Prasad,V. K. Anand,U. B. Paramanik,Z. Hossain,R. Sarkar,N. Oeschler,M. Baenitz,C. Geibel###
(1820666, 1820666)
 On the other hand, thethermoelectric power data have small absolute values (S  7 muV/K)indicating a weak Kondo interaction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[512.0, 11, 'B', 11],[447.0, 5.1, 'K', 10],[402.0, 0.4, 'K', 8],[355.0, 180, 'mJ', 8],[333.0, 2.5, 'K', 8],[280.0, 2.54, 'states', 7],[224.0, 4, 'f', 5],[197.0, 4, 'K', 4],[122.0, 3.5, 'K', 3],[72.0, 5, 'K', 2],[67.0, 5, 'K', 1],[48.0, 10, 'T', 1],[44.0, 2, 'K', 1],[30.0, 3.5, 'T', 1],[37.0, 30, 'K', 1],[50.0, 10, 'K', 1],[85.0, 11, 'B', 2],[109.0, 40, 'K', 2]

K
###Ferromagnetic Ordering in CeIr2B2: Transport, magnetization, specific heat and NMR studies|A. Prasad,V. K. Anand,U. B. Paramanik,Z. Hossain,R. Sarkar,N. Oeschler,M. Baenitz,C. Geibel###
(1820674, 1820674)
 On the other hand, thethermoelectric power data have small absolute values (S  7 muV/K)indicating a weak Kondo interaction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[520.0, 11, 'B', 11],[455.0, 5.1, 'K', 10],[410.0, 0.4, 'K', 8],[363.0, 180, 'mJ', 8],[341.0, 2.5, 'K', 8],[288.0, 2.54, 'states', 7],[232.0, 4, 'f', 5],[205.0, 4, 'K', 4],[130.0, 3.5, 'K', 3],[80.0, 5, 'K', 2],[75.0, 5, 'K', 1],[56.0, 10, 'T', 1],[52.0, 2, 'K', 1],[38.0, 3.5, 'T', 1],[29.0, 30, 'K', 1],[42.0, 10, 'K', 1],[77.0, 11, 'B', 2],[101.0, 40, 'K', 2]

S
###Ferromagnetic Ordering in CeIr2B2: Transport, magnetization, specific heat and NMR studies|A. Prasad,V. K. Anand,U. B. Paramanik,Z. Hossain,R. Sarkar,N. Oeschler,M. Baenitz,C. Geibel###
(1820695, 1820695)
 A shoulder in S(T) at about 30 K followedby a minimum at  10 K is attributed to crystal electric field (CE<missing VAR>F) effectsand the onset of magnetic ordering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[541.0, 11, 'B', 12],[476.0, 5.1, 'K', 11],[431.0, 0.4, 'K', 9],[384.0, 180, 'mJ', 9],[362.0, 2.5, 'K', 9],[309.0, 2.54, 'states', 8],[253.0, 4, 'f', 6],[226.0, 4, 'K', 5],[151.0, 3.5, 'K', 4],[101.0, 5, 'K', 3],[96.0, 5, 'K', 2],[77.0, 10, 'T', 2],[73.0, 2, 'K', 2],[59.0, 3.5, 'T', 2],[8.0, 30, 'K', 0],[21.0, 10, 'K', 0],[56.0, 11, 'B', 1],[80.0, 40, 'K', 1]

C
###Ferromagnetic Ordering in CeIr2B2: Transport, magnetization, specific heat and NMR studies|A. Prasad,V. K. Anand,U. B. Paramanik,Z. Hossain,R. Sarkar,N. Oeschler,M. Baenitz,C. Geibel###
(1820731, 1820731)
 A shoulder in S(T) at about 30 K followedby a minimum at  10 K is attributed to crystal electric field (CE<missing VAR>F) effectsand the onset of magnetic ordering.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[577.0, 11, 'B', 12],[512.0, 5.1, 'K', 11],[467.0, 0.4, 'K', 9],[420.0, 180, 'mJ', 9],[398.0, 2.5, 'K', 9],[345.0, 2.54, 'states', 8],[289.0, 4, 'f', 6],[262.0, 4, 'K', 5],[187.0, 3.5, 'K', 4],[137.0, 5, 'K', 3],[132.0, 5, 'K', 2],[113.0, 10, 'T', 2],[109.0, 2, 'K', 2],[95.0, 3.5, 'T', 2],[28.0, 30, 'K', 0],[15.0, 10, 'K', 0],[20.0, 11, 'B', 1],[44.0, 40, 'K', 1]

F
###Ferromagnetic Ordering in CeIr2B2: Transport, magnetization, specific heat and NMR studies|A. Prasad,V. K. Anand,U. B. Paramanik,Z. Hossain,R. Sarkar,N. Oeschler,M. Baenitz,C. Geibel###
(1820733, 1820733)
 A shoulder in S(T) at about 30 K followedby a minimum at  10 K is attributed to crystal electric field (CE<missing VAR>F) effectsand the onset of magnetic ordering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[579.0, 11, 'B', 12],[514.0, 5.1, 'K', 11],[469.0, 0.4, 'K', 9],[422.0, 180, 'mJ', 9],[400.0, 2.5, 'K', 9],[347.0, 2.54, 'states', 8],[291.0, 4, 'f', 6],[264.0, 4, 'K', 5],[189.0, 3.5, 'K', 4],[139.0, 5, 'K', 3],[134.0, 5, 'K', 2],[115.0, 10, 'T', 2],[111.0, 2, 'K', 2],[97.0, 3.5, 'T', 2],[30.0, 30, 'K', 0],[17.0, 10, 'K', 0],[18.0, 11, 'B', 1],[42.0, 40, 'K', 1]

N
###Ferromagnetic Ordering in CeIr2B2: Transport, magnetization, specific heat and NMR studies|A. Prasad,V. K. Anand,U. B. Paramanik,Z. Hossain,R. Sarkar,N. Oeschler,M. Baenitz,C. Geibel###
(1820753, 1820753)
 11B NMR line broadening provides strongevidence of ferromagnetic correlations below 40 K.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[599.0, 11, 'B', 13],[534.0, 5.1, 'K', 12],[489.0, 0.4, 'K', 10],[442.0, 180, 'mJ', 10],[420.0, 2.5, 'K', 10],[367.0, 2.54, 'states', 9],[311.0, 4, 'f', 7],[284.0, 4, 'K', 6],[209.0, 3.5, 'K', 5],[159.0, 5, 'K', 4],[154.0, 5, 'K', 3],[135.0, 10, 'T', 3],[131.0, 2, 'K', 3],[117.0, 3.5, 'T', 3],[50.0, 30, 'K', 1],[37.0, 10, 'K', 1],[2.0, 11, 'B', 0],[22.0, 40, 'K', 0]

PrRhSn3
###Ferromagnetic cluster spin-glass behavior in PrRhSn3|V. K. Anand,D. T. Adroja,A. D. Hillier###
(1820798, 1820801)
Ferromagnetic cluster spin-glass behavior in PrRhSn3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 5.5, 'K', 2],[183.0, 4.3, 'K', 3],[233.0, 2149, 's', 4],[264.0, 2, 'K', 5],[284.0, 5.5, 'K', 5],[372.0, 19.1, 'K', 6],[415.0, 0.086, 'provide', 7],[477.0, 10, 'K', 8]

PrRhSn3
###Ferromagnetic cluster spin-glass behavior in PrRhSn3|V. K. Anand,D. T. Adroja,A. D. Hillier###
(1820839, 1820842)
 We report the synthesis, structure, and magnetic and transport properties ofa new ternary intermetallic compound PrRhSn3 which crystallizes in LaRuSn3-typecubic structure (space group Pm-3n).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 5.5, 'K', 1],[142.0, 4.3, 'K', 2],[192.0, 2149, 's', 3],[223.0, 2, 'K', 4],[243.0, 5.5, 'K', 4],[331.0, 19.1, 'K', 5],[374.0, 0.086, 'provide', 6],[436.0, 10, 'K', 7]

LaRuSn3
###Ferromagnetic cluster spin-glass behavior in PrRhSn3|V. K. Anand,D. T. Adroja,A. D. Hillier###
(1820850, 1820853)
 We report the synthesis, structure, and magnetic and transport properties ofa new ternary intermetallic compound PrRhSn3 which crystallizes in LaRuSn3-typecubic structure (space group Pm-3n).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.6,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 5.5, 'K', 1],[131.0, 4.3, 'K', 2],[181.0, 2149, 's', 3],[212.0, 2, 'K', 4],[232.0, 5.5, 'K', 4],[320.0, 19.1, 'K', 5],[363.0, 0.086, 'provide', 6],[425.0, 10, 'K', 7]

Pm
###Ferromagnetic cluster spin-glass behavior in PrRhSn3|V. K. Anand,D. T. Adroja,A. D. Hillier###
(1820867, 1820867)
 We report the synthesis, structure, and magnetic and transport properties ofa new ternary intermetallic compound PrRhSn3 which crystallizes in LaRuSn3-typecubic structure (space group Pm-3n).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 5.5, 'K', 1],[117.0, 4.3, 'K', 2],[167.0, 2149, 's', 3],[198.0, 2, 'K', 4],[218.0, 5.5, 'K', 4],[306.0, 19.1, 'K', 5],[349.0, 0.086, 'provide', 6],[411.0, 10, 'K', 7]

At
###Ferromagnetic cluster spin-glass behavior in PrRhSn3|V. K. Anand,D. T. Adroja,A. D. Hillier###
(1820874, 1820874)
 At low applied fields the dc magneticsusceptibility exhibits a sharp anomaly below 6K with an irreversible behaviorin zero field cooled (Z<missing VAR>FC) and field cooled (FC) susceptibility below 5.5 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 5.5, 'K', 0],[110.0, 4.3, 'K', 1],[160.0, 2149, 's', 2],[191.0, 2, 'K', 3],[211.0, 5.5, 'K', 3],[299.0, 19.1, 'K', 4],[342.0, 0.086, 'provide', 5],[404.0, 10, 'K', 6]

K
###Ferromagnetic cluster spin-glass behavior in PrRhSn3|V. K. Anand,D. T. Adroja,A. D. Hillier###
(1820902, 1820902)
 At low applied fields the dc magneticsusceptibility exhibits a sharp anomaly below 6K with an irreversible behaviorin zero field cooled (Z<missing VAR>FC) and field cooled (FC) susceptibility below 5.5 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 5.5, 'K', 0],[82.0, 4.3, 'K', 1],[132.0, 2149, 's', 2],[163.0, 2, 'K', 3],[183.0, 5.5, 'K', 3],[271.0, 19.1, 'K', 4],[314.0, 0.086, 'provide', 5],[376.0, 10, 'K', 6]

C
###Ferromagnetic cluster spin-glass behavior in PrRhSn3|V. K. Anand,D. T. Adroja,A. D. Hillier###
(1820924, 1820924)
 At low applied fields the dc magneticsusceptibility exhibits a sharp anomaly below 6K with an irreversible behaviorin zero field cooled (Z<missing VAR>FC) and field cooled (FC) susceptibility below 5.5 K.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 5.5, 'K', 0],[60.0, 4.3, 'K', 1],[110.0, 2149, 's', 2],[141.0, 2, 'K', 3],[161.0, 5.5, 'K', 3],[249.0, 19.1, 'K', 4],[292.0, 0.086, 'provide', 5],[354.0, 10, 'K', 6]

(FC)
###Ferromagnetic cluster spin-glass behavior in PrRhSn3|V. K. Anand,D. T. Adroja,A. D. Hillier###
(1820933, 1820936)
 At low applied fields the dc magneticsusceptibility exhibits a sharp anomaly below 6K with an irreversible behaviorin zero field cooled (Z<missing VAR>FC) and field cooled (FC) susceptibility below 5.5 K.
Featurization successful!
0,0,0,0,0,0.5,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 5.5, 'K', 0],[48.0, 4.3, 'K', 1],[98.0, 2149, 's', 2],[129.0, 2, 'K', 3],[149.0, 5.5, 'K', 3],[237.0, 19.1, 'K', 4],[280.0, 0.086, 'provide', 5],[342.0, 10, 'K', 6]

B
###Ferromagnetic cluster spin-glass behavior in PrRhSn3|V. K. Anand,D. T. Adroja,A. D. Hillier###
(1821150, 1821150)
 The frequency dependence of the transition temperature Tf in the acsusceptibility obeys the Vogel-Fulcher law, nu  nu0exp[-E<missing VAR>a/k<missing VAR>B(Tf-T<missing VAR>0)]with activation energy E<missing VAR>a/k<missing VAR>B  19.1 K.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[209.0, 5.5, 'K', 4],[166.0, 4.3, 'K', 3],[116.0, 2149, 's', 2],[85.0, 2, 'K', 1],[65.0, 5.5, 'K', 1],[23.0, 19.1, 'K', 0],[66.0, 0.086, 'provide', 1],[128.0, 10, 'K', 2]

B
###Ferromagnetic cluster spin-glass behavior in PrRhSn3|V. K. Anand,D. T. Adroja,A. D. Hillier###
(1821171, 1821171)
 The frequency dependence of the transition temperature Tf in the acsusceptibility obeys the Vogel-Fulcher law, nu  nu0exp[-E<missing VAR>a/k<missing VAR>B(Tf-T<missing VAR>0)]with activation energy E<missing VAR>a/k<missing VAR>B  19.1 K.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[230.0, 5.5, 'K', 4],[187.0, 4.3, 'K', 3],[137.0, 2149, 's', 2],[106.0, 2, 'K', 1],[86.0, 5.5, 'K', 1],[2.0, 19.1, 'K', 0],[45.0, 0.086, 'provide', 1],[107.0, 10, 'K', 2]

PrRhSn3
###Ferromagnetic cluster spin-glass behavior in PrRhSn3|V. K. Anand,D. T. Adroja,A. D. Hillier###
(1821241, 1821244)
 This together with an intermediatevalue of the parameter delta Tf  Delta Tf/Tf Delta(log nu)  0.086 providean evidence for the formation of a cluster-glass state in PrRhSn3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[300.0, 5.5, 'K', 5],[257.0, 4.3, 'K', 4],[207.0, 2149, 's', 3],[176.0, 2, 'K', 2],[156.0, 5.5, 'K', 2],[68.0, 19.1, 'K', 1],[25.0, 0.086, 'provide', 0],[34.0, 10, 'K', 1]

W
###Ferromagnetic cluster spin-glass behavior in PrRhSn3|V. K. Anand,D. T. Adroja,A. D. Hillier###
(1821438, 1821438)
 We also obtain a surprisingly large value ofSommerfeld-Wilson ratio R<missing VAR>W  247.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[497.0, 5.5, 'K', 9],[454.0, 4.3, 'K', 8],[404.0, 2149, 's', 7],[373.0, 2, 'K', 6],[353.0, 5.5, 'K', 6],[265.0, 19.1, 'K', 5],[222.0, 0.086, 'provide', 4],[160.0, 10, 'K', 3]

N
###Manipulating Femtosecond Spin--Orbit Torques with Laser Pulse Sequences to Control Magnetic Memory States and Ringing|P. C. Lingos,J. Wang,I. E. Perakis###
(1821965, 1821965)
 By shaping two--colorlaser--pulse sequences analogous to multi--dimensional Nuclear MagneticResonance (NMR) spectroscopy, we show that sequences of clockwise orcounter--clockwise fs spin--orbit torques can enhance or suppress magneticringing and switching rotation at any desired time.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ce
###Kondo lattice and antiferromagnetic behavior in quaternary CeTAl$_4$Si$_2$ (T~=~Rh, Ir) single crystals|Arvind Maurya,R. Kulkarni,A. Thamizhavel,D. Paudyal,S. K. Dhar###
(1822088, 1822088)
Kondo lattice and antiferromagnetic behavior in quaternary CeT<missing VAR>Al4Si2 (T<missing VAR>Rh, Ir) single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Al4Si2
###Kondo lattice and antiferromagnetic behavior in quaternary CeTAl$_4$Si$_2$ (T~=~Rh, Ir) single crystals|Arvind Maurya,R. Kulkarni,A. Thamizhavel,D. Paudyal,S. K. Dhar###
(1822090, 1822093)
Kondo lattice and antiferromagnetic behavior in quaternary CeT<missing VAR>Al4Si2 (T<missing VAR>Rh, Ir) single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Rh
###Kondo lattice and antiferromagnetic behavior in quaternary CeTAl$_4$Si$_2$ (T~=~Rh, Ir) single crystals|Arvind Maurya,R. Kulkarni,A. Thamizhavel,D. Paudyal,S. K. Dhar###
(1822097, 1822097)
Kondo lattice and antiferromagnetic behavior in quaternary CeT<missing VAR>Al4Si2 (T<missing VAR>Rh, Ir) single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ir
###Kondo lattice and antiferromagnetic behavior in quaternary CeTAl$_4$Si$_2$ (T~=~Rh, Ir) single crystals|Arvind Maurya,R. Kulkarni,A. Thamizhavel,D. Paudyal,S. K. Dhar###
(1822100, 1822100)
Kondo lattice and antiferromagnetic behavior in quaternary CeT<missing VAR>Al4Si2 (T<missing VAR>Rh, Ir) single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CeRhAl4Si2
###Kondo lattice and antiferromagnetic behavior in quaternary CeTAl$_4$Si$_2$ (T~=~Rh, Ir) single crystals|Arvind Maurya,R. Kulkarni,A. Thamizhavel,D. Paudyal,S. K. Dhar###
(1822131, 1822136)
 We report the synthesis and the magnetic properties of single crystallineCeRhAl4Si2 and CeIrAl4Si2 and their non magnetic La-analogs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CeIrAl4Si2
###Kondo lattice and antiferromagnetic behavior in quaternary CeTAl$_4$Si$_2$ (T~=~Rh, Ir) single crystals|Arvind Maurya,R. Kulkarni,A. Thamizhavel,D. Paudyal,S. K. Dhar###
(1822140, 1822145)
 We report the synthesis and the magnetic properties of single crystallineCeRhAl4Si2 and CeIrAl4Si2 and their non magnetic La-analogs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

La
###Kondo lattice and antiferromagnetic behavior in quaternary CeTAl$_4$Si$_2$ (T~=~Rh, Ir) single crystals|Arvind Maurya,R. Kulkarni,A. Thamizhavel,D. Paudyal,S. K. Dhar###
(1822155, 1822155)
 We report the synthesis and the magnetic properties of single crystallineCeRhAl4Si2 and CeIrAl4Si2 and their non magnetic La-analogs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Al
###Kondo lattice and antiferromagnetic behavior in quaternary CeTAl$_4$Si$_2$ (T~=~Rh, Ir) single crystals|Arvind Maurya,R. Kulkarni,A. Thamizhavel,D. Paudyal,S. K. Dhar###
(1822181, 1822181)
 Thesingle crystals of these quaternary compounds were grown using Al-Si binaryeutectic as flux.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Kondo lattice and antiferromagnetic behavior in quaternary CeTAl$_4$Si$_2$ (T~=~Rh, Ir) single crystals|Arvind Maurya,R. Kulkarni,A. Thamizhavel,D. Paudyal,S. K. Dhar###
(1822183, 1822183)
 Thesingle crystals of these quaternary compounds were grown using Al-Si binaryeutectic as flux.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CeRhAl4Si2
###Kondo lattice and antiferromagnetic behavior in quaternary CeTAl$_4$Si$_2$ (T~=~Rh, Ir) single crystals|Arvind Maurya,R. Kulkarni,A. Thamizhavel,D. Paudyal,S. K. Dhar###
(1822256, 1822261)
 Both CeRhAl4Si2 and CeIrAl4Si2 undergo twoantiferromagnetic transitions, first from the paramagnetic to anantiferromagnetic state at T<missing VAR>rm N112.6K and 15.5K, followed by asecond transition at lower temperatures T<missing VAR>rm N29.4K and 13.8K,respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CeIrAl4Si2
###Kondo lattice and antiferromagnetic behavior in quaternary CeTAl$_4$Si$_2$ (T~=~Rh, Ir) single crystals|Arvind Maurya,R. Kulkarni,A. Thamizhavel,D. Paudyal,S. K. Dhar###
(1822265, 1822270)
 Both CeRhAl4Si2 and CeIrAl4Si2 undergo twoantiferromagnetic transitions, first from the paramagnetic to anantiferromagnetic state at T<missing VAR>rm N112.6K and 15.5K, followed by asecond transition at lower temperatures T<missing VAR>rm N29.4K and 13.8K,respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N112.6K
###Kondo lattice and antiferromagnetic behavior in quaternary CeTAl$_4$Si$_2$ (T~=~Rh, Ir) single crystals|Arvind Maurya,R. Kulkarni,A. Thamizhavel,D. Paudyal,S. K. Dhar###
(1822304, 1822307)
 Both CeRhAl4Si2 and CeIrAl4Si2 undergo twoantiferromagnetic transitions, first from the paramagnetic to anantiferromagnetic state at T<missing VAR>rm N112.6K and 15.5K, followed by asecond transition at lower temperatures T<missing VAR>rm N29.4K and 13.8K,respectively.
Featurization terminated normally.
0,0,0,0,0,0,0.9911971830985915,0,0,0,0,0,0,0,0,0,0,0,0.008802816901408451,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Kondo lattice and antiferromagnetic behavior in quaternary CeTAl$_4$Si$_2$ (T~=~Rh, Ir) single crystals|Arvind Maurya,R. Kulkarni,A. Thamizhavel,D. Paudyal,S. K. Dhar###
(1822312, 1822312)
 Both CeRhAl4Si2 and CeIrAl4Si2 undergo twoantiferromagnetic transitions, first from the paramagnetic to anantiferromagnetic state at T<missing VAR>rm N112.6K and 15.5K, followed by asecond transition at lower temperatures T<missing VAR>rm N29.4K and 13.8K,respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N29.4K
###Kondo lattice and antiferromagnetic behavior in quaternary CeTAl$_4$Si$_2$ (T~=~Rh, Ir) single crystals|Arvind Maurya,R. Kulkarni,A. Thamizhavel,D. Paudyal,S. K. Dhar###
(1822335, 1822338)
 Both CeRhAl4Si2 and CeIrAl4Si2 undergo twoantiferromagnetic transitions, first from the paramagnetic to anantiferromagnetic state at T<missing VAR>rm N112.6K and 15.5K, followed by asecond transition at lower temperatures T<missing VAR>rm N29.4K and 13.8K,respectively.
Featurization terminated normally.
0,0,0,0,0,0,0.9671052631578947,0,0,0,0,0,0,0,0,0,0,0,0.03289473684210526,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Kondo lattice and antiferromagnetic behavior in quaternary CeTAl$_4$Si$_2$ (T~=~Rh, Ir) single crystals|Arvind Maurya,R. Kulkarni,A. Thamizhavel,D. Paudyal,S. K. Dhar###
(1822343, 1822343)
 Both CeRhAl4Si2 and CeIrAl4Si2 undergo twoantiferromagnetic transitions, first from the paramagnetic to anantiferromagnetic state at T<missing VAR>rm N112.6K and 15.5K, followed by asecond transition at lower temperatures T<missing VAR>rm N29.4K and 13.8K,respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Kondo lattice and antiferromagnetic behavior in quaternary CeTAl$_4$Si$_2$ (T~=~Rh, Ir) single crystals|Arvind Maurya,R. Kulkarni,A. Thamizhavel,D. Paudyal,S. K. Dhar###
(1822418, 1822418)
 Concomitantly, isothermalmagnetization at 2K along the c<missing VAR>-axis shows a sharp spin-flop transitionaccompanied by a sizeable hysteresis, while it varies nearly linearly withfield along the [100] direction up to the highest field 14T<missing VAR>, of ourmeasurement.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Kondo lattice and antiferromagnetic behavior in quaternary CeTAl$_4$Si$_2$ (T~=~Rh, Ir) single crystals|Arvind Maurya,R. Kulkarni,A. Thamizhavel,D. Paudyal,S. K. Dhar###
(1822637, 1822637)
 From the heat capacity data below 1K, the coefficient ofthe linear term in the electronic heat capacity, gamma, is inferred to be195.6 and 49.4mJ/mol K2 in CeRhAl4Si2 and CeIrAl4Si2,respectively classifying these materials as moderate heavy fermion compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K2
###Kondo lattice and antiferromagnetic behavior in quaternary CeTAl$_4$Si$_2$ (T~=~Rh, Ir) single crystals|Arvind Maurya,R. Kulkarni,A. Thamizhavel,D. Paudyal,S. K. Dhar###
(1822686, 1822687)
 From the heat capacity data below 1K, the coefficient ofthe linear term in the electronic heat capacity, gamma, is inferred to be195.6 and 49.4mJ/mol K2 in CeRhAl4Si2 and CeIrAl4Si2,respectively classifying these materials as moderate heavy fermion compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CeRhAl4Si2
###Kondo lattice and antiferromagnetic behavior in quaternary CeTAl$_4$Si$_2$ (T~=~Rh, Ir) single crystals|Arvind Maurya,R. Kulkarni,A. Thamizhavel,D. Paudyal,S. K. Dhar###
(1822691, 1822696)
 From the heat capacity data below 1K, the coefficient ofthe linear term in the electronic heat capacity, gamma, is inferred to be195.6 and 49.4mJ/mol K2 in CeRhAl4Si2 and CeIrAl4Si2,respectively classifying these materials as moderate heavy fermion compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CeIrAl4Si2
###Kondo lattice and antiferromagnetic behavior in quaternary CeTAl$_4$Si$_2$ (T~=~Rh, Ir) single crystals|Arvind Maurya,R. Kulkarni,A. Thamizhavel,D. Paudyal,S. K. Dhar###
(1822700, 1822705)
 From the heat capacity data below 1K, the coefficient ofthe linear term in the electronic heat capacity, gamma, is inferred to be195.6 and 49.4mJ/mol K2 in CeRhAl4Si2 and CeIrAl4Si2,respectively classifying these materials as moderate heavy fermion compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.125,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Bulk Fermi-surface of the Weyl type-II semi-metallic candidate MoTe2|D. Rhodes,R. Schönemann,N. Aryal,Q. Zhou,Q. R. Zhang,E. Kampert,Y. -C. Chiu,Y. Lai,Y. Shimura,G. T. McCandless,J. Y. Chan,D. W. Paley,J. Lee,A. D. Finke,J. P. C. Ruff,S. Das,E. Manousakis,L. Balicas###
(1822750, 1822751)
Bulk Fermi-surface of the Weyl type-II semi-metallic candidate MoTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoTe2
###Bulk Fermi-surface of the Weyl type-II semi-metallic candidate MoTe2|D. Rhodes,R. Schönemann,N. Aryal,Q. Zhou,Q. R. Zhang,E. Kampert,Y. -C. Chiu,Y. Lai,Y. Shimura,G. T. McCandless,J. Y. Chan,D. W. Paley,J. Lee,A. D. Finke,J. P. C. Ruff,S. Das,E. Manousakis,L. Balicas###
(1822759, 1822761)
Bulk Fermi-surface of the Weyl type-II semi-metallic candidate MoTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Bulk Fermi-surface of the Weyl type-II semi-metallic candidate MoTe2|D. Rhodes,R. Schönemann,N. Aryal,Q. Zhou,Q. R. Zhang,E. Kampert,Y. -C. Chiu,Y. Lai,Y. Shimura,G. T. McCandless,J. Y. Chan,D. W. Paley,J. Lee,A. D. Finke,J. P. C. Ruff,S. Das,E. Manousakis,L. Balicas###
(1822772, 1822774)
 The electronic structure of WTe2 and orthorhombic gamma-MoTe2, areclaimed to contain pairs of Weyl type-II points.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoTe2
###Bulk Fermi-surface of the Weyl type-II semi-metallic candidate MoTe2|D. Rhodes,R. Schönemann,N. Aryal,Q. Zhou,Q. R. Zhang,E. Kampert,Y. -C. Chiu,Y. Lai,Y. Shimura,G. T. McCandless,J. Y. Chan,D. W. Paley,J. Lee,A. D. Finke,J. P. C. Ruff,S. Das,E. Manousakis,L. Balicas###
(1822782, 1822784)
 The electronic structure of WTe2 and orthorhombic gamma-MoTe2, areclaimed to contain pairs of Weyl type-II points.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Bulk Fermi-surface of the Weyl type-II semi-metallic candidate MoTe2|D. Rhodes,R. Schönemann,N. Aryal,Q. Zhou,Q. R. Zhang,E. Kampert,Y. -C. Chiu,Y. Lai,Y. Shimura,G. T. McCandless,J. Y. Chan,D. W. Paley,J. Lee,A. D. Finke,J. P. C. Ruff,S. Das,E. Manousakis,L. Balicas###
(1822804, 1822805)
 The electronic structure of WTe2 and orthorhombic gamma-MoTe2, areclaimed to contain pairs of Weyl type-II points.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Bulk Fermi-surface of the Weyl type-II semi-metallic candidate MoTe2|D. Rhodes,R. Schönemann,N. Aryal,Q. Zhou,Q. R. Zhang,E. Kampert,Y. -C. Chiu,Y. Lai,Y. Shimura,G. T. McCandless,J. Y. Chan,D. W. Paley,J. Lee,A. D. Finke,J. P. C. Ruff,S. Das,E. Manousakis,L. Balicas###
(1822820, 1822820)
 A series of ARPES experimentsclaim a broad agreement with these predictions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoTe2
###Bulk Fermi-surface of the Weyl type-II semi-metallic candidate MoTe2|D. Rhodes,R. Schönemann,N. Aryal,Q. Zhou,Q. R. Zhang,E. Kampert,Y. -C. Chiu,Y. Lai,Y. Shimura,G. T. McCandless,J. Y. Chan,D. W. Paley,J. Lee,A. D. Finke,J. P. C. Ruff,S. Das,E. Manousakis,L. Balicas###
(1822851, 1822853)
 We synthesized single-crystalsof MoTe2 through a Te flux method to validate these predictions throughmeasurements of its bulk Fermi surface (FS) emphvia quantum oscillatoryphenomena.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Te
###Bulk Fermi-surface of the Weyl type-II semi-metallic candidate MoTe2|D. Rhodes,R. Schönemann,N. Aryal,Q. Zhou,Q. R. Zhang,E. Kampert,Y. -C. Chiu,Y. Lai,Y. Shimura,G. T. McCandless,J. Y. Chan,D. W. Paley,J. Lee,A. D. Finke,J. P. C. Ruff,S. Das,E. Manousakis,L. Balicas###
(1822859, 1822859)
 We synthesized single-crystalsof MoTe2 through a Te flux method to validate these predictions throughmeasurements of its bulk Fermi surface (FS) emphvia quantum oscillatoryphenomena.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(FS)
###Bulk Fermi-surface of the Weyl type-II semi-metallic candidate MoTe2|D. Rhodes,R. Schönemann,N. Aryal,Q. Zhou,Q. R. Zhang,E. Kampert,Y. -C. Chiu,Y. Lai,Y. Shimura,G. T. McCandless,J. Y. Chan,D. W. Paley,J. Lee,A. D. Finke,J. P. C. Ruff,S. Das,E. Manousakis,L. Balicas###
(1822888, 1822891)
 We synthesized single-crystalsof MoTe2 through a Te flux method to validate these predictions throughmeasurements of its bulk Fermi surface (FS) emphvia quantum oscillatoryphenomena.
Featurization successful!
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoTe2
###Bulk Fermi-surface of the Weyl type-II semi-metallic candidate MoTe2|D. Rhodes,R. Schönemann,N. Aryal,Q. Zhou,Q. R. Zhang,E. Kampert,Y. -C. Chiu,Y. Lai,Y. Shimura,G. T. McCandless,J. Y. Chan,D. W. Paley,J. Lee,A. D. Finke,J. P. C. Ruff,S. Das,E. Manousakis,L. Balicas###
(1822923, 1822925)
 We find that the superconducting transition temperature ofgamma-MoTe2 depends on disorder as quantified by the ratio between theroom- and low-temperature resistivities, suggesting the possibility of anunconventional superconducting pairing symmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Bulk Fermi-surface of the Weyl type-II semi-metallic candidate MoTe2|D. Rhodes,R. Schönemann,N. Aryal,Q. Zhou,Q. R. Zhang,E. Kampert,Y. -C. Chiu,Y. Lai,Y. Shimura,G. T. McCandless,J. Y. Chan,D. W. Paley,J. Lee,A. D. Finke,J. P. C. Ruff,S. Das,E. Manousakis,L. Balicas###
(1822984, 1822986)
 Similarly to WTe2, themagnetoresistivity of gamma-MoTe2 does not saturate at high magneticfields and can easily surpass 106 %.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoTe2
###Bulk Fermi-surface of the Weyl type-II semi-metallic candidate MoTe2|D. Rhodes,R. Schönemann,N. Aryal,Q. Zhou,Q. R. Zhang,E. Kampert,Y. -C. Chiu,Y. Lai,Y. Shimura,G. T. McCandless,J. Y. Chan,D. W. Paley,J. Lee,A. D. Finke,J. P. C. Ruff,S. Das,E. Manousakis,L. Balicas###
(1822998, 1823000)
 Similarly to WTe2, themagnetoresistivity of gamma-MoTe2 does not saturate at high magneticfields and can easily surpass 106 %.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FS
###Bulk Fermi-surface of the Weyl type-II semi-metallic candidate MoTe2|D. Rhodes,R. Schönemann,N. Aryal,Q. Zhou,Q. R. Zhang,E. Kampert,Y. -C. Chiu,Y. Lai,Y. Shimura,G. T. McCandless,J. Y. Chan,D. W. Paley,J. Lee,A. D. Finke,J. P. C. Ruff,S. Das,E. Manousakis,L. Balicas###
(1823083, 1823084)
 Remarkably, the analysis of the deHaas-van Alphen (d<missing VAR>HvA) signal superimposed onto the magnetic torque, indicatesthat the geometry of its FS is markedly distinct from the calculated one.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FS
###Bulk Fermi-surface of the Weyl type-II semi-metallic candidate MoTe2|D. Rhodes,R. Schönemann,N. Aryal,Q. Zhou,Q. R. Zhang,E. Kampert,Y. -C. Chiu,Y. Lai,Y. Shimura,G. T. McCandless,J. Y. Chan,D. W. Paley,J. Lee,A. D. Finke,J. P. C. Ruff,S. Das,E. Manousakis,L. Balicas###
(1823118, 1823119)
 Thed<missing VAR>HvA signal also reveals that the FS is affected by the Zeeman-effectprecluding the extraction of the Berry-phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Bulk Fermi-surface of the Weyl type-II semi-metallic candidate MoTe2|D. Rhodes,R. Schönemann,N. Aryal,Q. Zhou,Q. R. Zhang,E. Kampert,Y. -C. Chiu,Y. Lai,Y. Shimura,G. T. McCandless,J. Y. Chan,D. W. Paley,J. Lee,A. D. Finke,J. P. C. Ruff,S. Das,E. Manousakis,L. Balicas###
(1823166, 1823166)
 A direct comparison between theprevious ARPES studies and density-functional-theory (DFT) calculations revealsa disagreement in the position of the valence bands relative to the Fermi levelvarepsilonF.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Bulk Fermi-surface of the Weyl type-II semi-metallic candidate MoTe2|D. Rhodes,R. Schönemann,N. Aryal,Q. Zhou,Q. R. Zhang,E. Kampert,Y. -C. Chiu,Y. Lai,Y. Shimura,G. T. McCandless,J. Y. Chan,D. W. Paley,J. Lee,A. D. Finke,J. P. C. Ruff,S. Das,E. Manousakis,L. Balicas###
(1823219, 1823219)
 A direct comparison between theprevious ARPES studies and density-functional-theory (DFT) calculations revealsa disagreement in the position of the valence bands relative to the Fermi levelvarepsilonF.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Bulk Fermi-surface of the Weyl type-II semi-metallic candidate MoTe2|D. Rhodes,R. Schönemann,N. Aryal,Q. Zhou,Q. R. Zhang,E. Kampert,Y. -C. Chiu,Y. Lai,Y. Shimura,G. T. McCandless,J. Y. Chan,D. W. Paley,J. Lee,A. D. Finke,J. P. C. Ruff,S. Das,E. Manousakis,L. Balicas###
(1823253, 1823253)
 Here, we show that a shift of the DFT valence bands relativeto varepsilonF, in order to match the ARPES observations, and of the DFTelectron bands to explain some of the observed d<missing VAR>HvA frequencies, leads to agood agreement between the calculations and the angular dependence of the FScross-sectional areas observed experimentally.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Bulk Fermi-surface of the Weyl type-II semi-metallic candidate MoTe2|D. Rhodes,R. Schönemann,N. Aryal,Q. Zhou,Q. R. Zhang,E. Kampert,Y. -C. Chiu,Y. Lai,Y. Shimura,G. T. McCandless,J. Y. Chan,D. W. Paley,J. Lee,A. D. Finke,J. P. C. Ruff,S. Das,E. Manousakis,L. Balicas###
(1823270, 1823270)
 Here, we show that a shift of the DFT valence bands relativeto varepsilonF, in order to match the ARPES observations, and of the DFTelectron bands to explain some of the observed d<missing VAR>HvA frequencies, leads to agood agreement between the calculations and the angular dependence of the FScross-sectional areas observed experimentally.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FS
###Bulk Fermi-surface of the Weyl type-II semi-metallic candidate MoTe2|D. Rhodes,R. Schönemann,N. Aryal,Q. Zhou,Q. R. Zhang,E. Kampert,Y. -C. Chiu,Y. Lai,Y. Shimura,G. T. McCandless,J. Y. Chan,D. W. Paley,J. Lee,A. D. Finke,J. P. C. Ruff,S. Das,E. Manousakis,L. Balicas###
(1823338, 1823339)
 Here, we show that a shift of the DFT valence bands relativeto varepsilonF, in order to match the ARPES observations, and of the DFTelectron bands to explain some of the observed d<missing VAR>HvA frequencies, leads to agood agreement between the calculations and the angular dependence of the FScross-sectional areas observed experimentally.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Bulk Fermi-surface of the Weyl type-II semi-metallic candidate MoTe2|D. Rhodes,R. Schönemann,N. Aryal,Q. Zhou,Q. R. Zhang,E. Kampert,Y. -C. Chiu,Y. Lai,Y. Shimura,G. T. McCandless,J. Y. Chan,D. W. Paley,J. Lee,A. D. Finke,J. P. C. Ruff,S. Das,E. Manousakis,L. Balicas###
(1823393, 1823394)
 However, this relativedisplacement between electron- and hole-bands eliminates their crossings and,therefore, the Weyl type-II points predicted for gamma-MoTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MoTe2
###Bulk Fermi-surface of the Weyl type-II semi-metallic candidate MoTe2|D. Rhodes,R. Schönemann,N. Aryal,Q. Zhou,Q. R. Zhang,E. Kampert,Y. -C. Chiu,Y. Lai,Y. Shimura,G. T. McCandless,J. Y. Chan,D. W. Paley,J. Lee,A. D. Finke,J. P. C. Ruff,S. Das,E. Manousakis,L. Balicas###
(1823404, 1823406)
 However, this relativedisplacement between electron- and hole-bands eliminates their crossings and,therefore, the Weyl type-II points predicted for gamma-MoTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ni
###Temperature dependence of the electrical resistivity and the anisotropic magnetoresistance (AMR) of electrodeposited Ni Co alloys|B. G. Tóth,L. Péter,Á. Révész,J. Pádár,I. Bakonyi###
(1823447, 1823447)
Temperature dependence of the electrical resistivity and the anisotropic magnetoresistance (AMR) of electrodeposited Ni Co alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 2, 'um', 2],[286.0, 10, 'nm', 5],[322.0, 3, 'to', 6],[324.0, 5, ',', 6],[511.0, 20, 'and', 11],[512.0, 30, 'at', 11],[642.0, 2, 'than', 13]

Co
###Temperature dependence of the electrical resistivity and the anisotropic magnetoresistance (AMR) of electrodeposited Ni Co alloys|B. G. Tóth,L. Péter,Á. Révész,J. Pádár,I. Bakonyi###
(1823449, 1823449)
Temperature dependence of the electrical resistivity and the anisotropic magnetoresistance (AMR) of electrodeposited Ni Co alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 2, 'um', 2],[284.0, 10, 'nm', 5],[320.0, 3, 'to', 6],[322.0, 5, ',', 6],[509.0, 20, 'and', 11],[510.0, 30, 'at', 11],[640.0, 2, 'than', 13]

Ni
###Temperature dependence of the electrical resistivity and the anisotropic magnetoresistance (AMR) of electrodeposited Ni Co alloys|B. G. Tóth,L. Péter,Á. Révész,J. Pádár,I. Bakonyi###
(1823481, 1823481)
 The electrical resistivity and the anisotropic magnetoresistance (AMR) wasinvestigated for Ni Co alloys at and below room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 2, 'um', 1],[252.0, 10, 'nm', 4],[288.0, 3, 'to', 5],[290.0, 5, ',', 5],[477.0, 20, 'and', 10],[478.0, 30, 'at', 10],[608.0, 2, 'than', 12]

Co
###Temperature dependence of the electrical resistivity and the anisotropic magnetoresistance (AMR) of electrodeposited Ni Co alloys|B. G. Tóth,L. Péter,Á. Révész,J. Pádár,I. Bakonyi###
(1823483, 1823483)
 The electrical resistivity and the anisotropic magnetoresistance (AMR) wasinvestigated for Ni Co alloys at and below room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 2, 'um', 1],[250.0, 10, 'nm', 4],[286.0, 3, 'to', 5],[288.0, 5, ',', 5],[475.0, 20, 'and', 10],[476.0, 30, 'at', 10],[606.0, 2, 'than', 12]

Ni
###Temperature dependence of the electrical resistivity and the anisotropic magnetoresistance (AMR) of electrodeposited Ni Co alloys|B. G. Tóth,L. Péter,Á. Révész,J. Pádár,I. Bakonyi###
(1823500, 1823500)
 The Ni Co alloylayers having a thickness of about 2 um were prepared by electrodeposition onSi wafers with evaporated Cr and Cu underlayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 2, 'um', 0],[233.0, 10, 'nm', 3],[269.0, 3, 'to', 4],[271.0, 5, ',', 4],[458.0, 20, 'and', 9],[459.0, 30, 'at', 9],[589.0, 2, 'than', 11]

Co
###Temperature dependence of the electrical resistivity and the anisotropic magnetoresistance (AMR) of electrodeposited Ni Co alloys|B. G. Tóth,L. Péter,Á. Révész,J. Pádár,I. Bakonyi###
(1823502, 1823502)
 The Ni Co alloylayers having a thickness of about 2 um were prepared by electrodeposition onSi wafers with evaporated Cr and Cu underlayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 2, 'um', 0],[231.0, 10, 'nm', 3],[267.0, 3, 'to', 4],[269.0, 5, ',', 4],[456.0, 20, 'and', 9],[457.0, 30, 'at', 9],[587.0, 2, 'than', 11]

Si
###Temperature dependence of the electrical resistivity and the anisotropic magnetoresistance (AMR) of electrodeposited Ni Co alloys|B. G. Tóth,L. Péter,Á. Révész,J. Pádár,I. Bakonyi###
(1823531, 1823531)
 The Ni Co alloylayers having a thickness of about 2 um were prepared by electrodeposition onSi wafers with evaporated Cr and Cu underlayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 2, 'um', 0],[202.0, 10, 'nm', 3],[238.0, 3, 'to', 4],[240.0, 5, ',', 4],[427.0, 20, 'and', 9],[428.0, 30, 'at', 9],[558.0, 2, 'than', 11]

Cr
###Temperature dependence of the electrical resistivity and the anisotropic magnetoresistance (AMR) of electrodeposited Ni Co alloys|B. G. Tóth,L. Péter,Á. Révész,J. Pádár,I. Bakonyi###
(1823539, 1823539)
 The Ni Co alloylayers having a thickness of about 2 um were prepared by electrodeposition onSi wafers with evaporated Cr and Cu underlayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 2, 'um', 0],[194.0, 10, 'nm', 3],[230.0, 3, 'to', 4],[232.0, 5, ',', 4],[419.0, 20, 'and', 9],[420.0, 30, 'at', 9],[550.0, 2, 'than', 11]

Cu
###Temperature dependence of the electrical resistivity and the anisotropic magnetoresistance (AMR) of electrodeposited Ni Co alloys|B. G. Tóth,L. Péter,Á. Révész,J. Pádár,I. Bakonyi###
(1823543, 1823543)
 The Ni Co alloylayers having a thickness of about 2 um were prepared by electrodeposition onSi wafers with evaporated Cr and Cu underlayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 2, 'um', 0],[190.0, 10, 'nm', 3],[226.0, 3, 'to', 4],[228.0, 5, ',', 4],[415.0, 20, 'and', 9],[416.0, 30, 'at', 9],[546.0, 2, 'than', 11]

Ni
###Temperature dependence of the electrical resistivity and the anisotropic magnetoresistance (AMR) of electrodeposited Ni Co alloys|B. G. Tóth,L. Péter,Á. Révész,J. Pádár,I. Bakonyi###
(1823579, 1823579)
 The alloy composition wasvaried in the whole concentration range by varying the ratio of Ni sulfate andCo sulfate in the electrolyte.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 2, 'um', 1],[154.0, 10, 'nm', 2],[190.0, 3, 'to', 3],[192.0, 5, ',', 3],[379.0, 20, 'and', 8],[380.0, 30, 'at', 8],[510.0, 2, 'than', 10]

Co
###Temperature dependence of the electrical resistivity and the anisotropic magnetoresistance (AMR) of electrodeposited Ni Co alloys|B. G. Tóth,L. Péter,Á. Révész,J. Pádár,I. Bakonyi###
(1823586, 1823586)
 The alloy composition wasvaried in the whole concentration range by varying the ratio of Ni sulfate andCo sulfate in the electrolyte.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 2, 'um', 1],[147.0, 10, 'nm', 2],[183.0, 3, 'to', 3],[185.0, 5, ',', 3],[372.0, 20, 'and', 8],[373.0, 30, 'at', 8],[503.0, 2, 'than', 10]

Ni
###Temperature dependence of the electrical resistivity and the anisotropic magnetoresistance (AMR) of electrodeposited Ni Co alloys|B. G. Tóth,L. Péter,Á. Révész,J. Pádár,I. Bakonyi###
(1823599, 1823599)
 The Ni Co alloy deposits were investigated firstin the as deposited state on the substrates and then, by mechanically strippingthem from the substrates, as self supporting layers both without and afterannealing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 2, 'um', 2],[134.0, 10, 'nm', 1],[170.0, 3, 'to', 2],[172.0, 5, ',', 2],[359.0, 20, 'and', 7],[360.0, 30, 'at', 7],[490.0, 2, 'than', 9]

Co
###Temperature dependence of the electrical resistivity and the anisotropic magnetoresistance (AMR) of electrodeposited Ni Co alloys|B. G. Tóth,L. Péter,Á. Révész,J. Pádár,I. Bakonyi###
(1823601, 1823601)
 The Ni Co alloy deposits were investigated firstin the as deposited state on the substrates and then, by mechanically strippingthem from the substrates, as self supporting layers both without and afterannealing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 2, 'um', 2],[132.0, 10, 'nm', 1],[168.0, 3, 'to', 2],[170.0, 5, ',', 2],[357.0, 20, 'and', 7],[358.0, 30, 'at', 7],[488.0, 2, 'than', 9]

Co
###Temperature dependence of the electrical resistivity and the anisotropic magnetoresistance (AMR) of electrodeposited Ni Co alloys|B. G. Tóth,L. Péter,Á. Révész,J. Pádár,I. Bakonyi###
(1823837, 1823837)
 Co but strongly decreased it above this concentration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[319.0, 2, 'um', 7],[104.0, 10, 'nm', 4],[68.0, 3, 'to', 3],[66.0, 5, ',', 3],[121.0, 20, 'and', 2],[122.0, 30, 'at', 2],[252.0, 2, 'than', 4]

Ni
###Temperature dependence of the electrical resistivity and the anisotropic magnetoresistance (AMR) of electrodeposited Ni Co alloys|B. G. Tóth,L. Péter,Á. Révész,J. Pádár,I. Bakonyi###
(1823881, 1823881)
 The compositiondependence of the resistivity and the AMR of the annealed Ni Co alloy depositswas in good quantitative agreement with the available literature data both at13 K and at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[363.0, 2, 'um', 8],[148.0, 10, 'nm', 5],[112.0, 3, 'to', 4],[110.0, 5, ',', 4],[77.0, 20, 'and', 1],[78.0, 30, 'at', 1],[208.0, 2, 'than', 3]

Co
###Temperature dependence of the electrical resistivity and the anisotropic magnetoresistance (AMR) of electrodeposited Ni Co alloys|B. G. Tóth,L. Péter,Á. Révész,J. Pádár,I. Bakonyi###
(1823883, 1823883)
 The compositiondependence of the resistivity and the AMR of the annealed Ni Co alloy depositswas in good quantitative agreement with the available literature data both at13 K and at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[365.0, 2, 'um', 8],[150.0, 10, 'nm', 5],[114.0, 3, 'to', 4],[112.0, 5, ',', 4],[75.0, 20, 'and', 1],[76.0, 30, 'at', 1],[206.0, 2, 'than', 3]

K
###Temperature dependence of the electrical resistivity and the anisotropic magnetoresistance (AMR) of electrodeposited Ni Co alloys|B. G. Tóth,L. Péter,Á. Révész,J. Pádár,I. Bakonyi###
(1823917, 1823917)
 The compositiondependence of the resistivity and the AMR of the annealed Ni Co alloy depositswas in good quantitative agreement with the available literature data both at13 K and at room temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[399.0, 2, 'um', 8],[184.0, 10, 'nm', 5],[148.0, 3, 'to', 4],[146.0, 5, ',', 4],[41.0, 20, 'and', 1],[42.0, 30, 'at', 1],[172.0, 2, 'than', 3]

Co
###Temperature dependence of the electrical resistivity and the anisotropic magnetoresistance (AMR) of electrodeposited Ni Co alloys|B. G. Tóth,L. Péter,Á. Révész,J. Pádár,I. Bakonyi###
(1823963, 1823963)
 Co and thedata of the Ni Co alloys fit well to the limiting values of the pure componentmetals (fcc Ni and fcc Co).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[445.0, 2, 'um', 10],[230.0, 10, 'nm', 7],[194.0, 3, 'to', 6],[192.0, 5, ',', 6],[5.0, 20, 'and', 1],[4.0, 30, 'at', 1],[126.0, 2, 'than', 1]

Ni
###Temperature dependence of the electrical resistivity and the anisotropic magnetoresistance (AMR) of electrodeposited Ni Co alloys|B. G. Tóth,L. Péter,Á. Révész,J. Pádár,I. Bakonyi###
(1823976, 1823976)
 Co and thedata of the Ni Co alloys fit well to the limiting values of the pure componentmetals (fcc Ni and fcc Co).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[458.0, 2, 'um', 10],[243.0, 10, 'nm', 7],[207.0, 3, 'to', 6],[205.0, 5, ',', 6],[18.0, 20, 'and', 1],[17.0, 30, 'at', 1],[113.0, 2, 'than', 1]

Co
###Temperature dependence of the electrical resistivity and the anisotropic magnetoresistance (AMR) of electrodeposited Ni Co alloys|B. G. Tóth,L. Péter,Á. Révész,J. Pádár,I. Bakonyi###
(1823978, 1823978)
 Co and thedata of the Ni Co alloys fit well to the limiting values of the pure componentmetals (fcc Ni and fcc Co).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[460.0, 2, 'um', 10],[245.0, 10, 'nm', 7],[209.0, 3, 'to', 6],[207.0, 5, ',', 6],[20.0, 20, 'and', 1],[19.0, 30, 'at', 1],[111.0, 2, 'than', 1]

Ni
###Temperature dependence of the electrical resistivity and the anisotropic magnetoresistance (AMR) of electrodeposited Ni Co alloys|B. G. Tóth,L. Péter,Á. Révész,J. Pádár,I. Bakonyi###
(1824008, 1824008)
 Co and thedata of the Ni Co alloys fit well to the limiting values of the pure componentmetals (fcc Ni and fcc Co).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[490.0, 2, 'um', 10],[275.0, 10, 'nm', 7],[239.0, 3, 'to', 6],[237.0, 5, ',', 6],[50.0, 20, 'and', 1],[49.0, 30, 'at', 1],[81.0, 2, 'than', 1]

Co
###Temperature dependence of the electrical resistivity and the anisotropic magnetoresistance (AMR) of electrodeposited Ni Co alloys|B. G. Tóth,L. Péter,Á. Révész,J. Pádár,I. Bakonyi###
(1824014, 1824014)
 Co and thedata of the Ni Co alloys fit well to the limiting values of the pure componentmetals (fcc Ni and fcc Co).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[496.0, 2, 'um', 10],[281.0, 10, 'nm', 7],[245.0, 3, 'to', 6],[243.0, 5, ',', 6],[56.0, 20, 'and', 1],[55.0, 30, 'at', 1],[75.0, 2, 'than', 1]

Ni
###Temperature dependence of the electrical resistivity and the anisotropic magnetoresistance (AMR) of electrodeposited Ni Co alloys|B. G. Tóth,L. Péter,Á. Révész,J. Pádár,I. Bakonyi###
(1824035, 1824035)
 The only theoretical calculation reported formerlyon fcc Ni Co alloys yielded at T<missing VAR>0K a resistivity value smaller by a factor of5 and an AMR value larger by a factor of about 2 than the corresponding lowtemperature experimental data, although the theoretical results properlyreproduced the composition dependence of both quantities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[517.0, 2, 'um', 11],[302.0, 10, 'nm', 8],[266.0, 3, 'to', 7],[264.0, 5, ',', 7],[77.0, 20, 'and', 2],[76.0, 30, 'at', 2],[54.0, 2, 'than', 0]

Co
###Temperature dependence of the electrical resistivity and the anisotropic magnetoresistance (AMR) of electrodeposited Ni Co alloys|B. G. Tóth,L. Péter,Á. Révész,J. Pádár,I. Bakonyi###
(1824037, 1824037)
 The only theoretical calculation reported formerlyon fcc Ni Co alloys yielded at T<missing VAR>0K a resistivity value smaller by a factor of5 and an AMR value larger by a factor of about 2 than the corresponding lowtemperature experimental data, although the theoretical results properlyreproduced the composition dependence of both quantities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[519.0, 2, 'um', 11],[304.0, 10, 'nm', 8],[268.0, 3, 'to', 7],[266.0, 5, ',', 7],[79.0, 20, 'and', 2],[78.0, 30, 'at', 2],[52.0, 2, 'than', 0]

K
###Temperature dependence of the electrical resistivity and the anisotropic magnetoresistance (AMR) of electrodeposited Ni Co alloys|B. G. Tóth,L. Péter,Á. Révész,J. Pádár,I. Bakonyi###
(1824047, 1824047)
 The only theoretical calculation reported formerlyon fcc Ni Co alloys yielded at T<missing VAR>0K a resistivity value smaller by a factor of5 and an AMR value larger by a factor of about 2 than the corresponding lowtemperature experimental data, although the theoretical results properlyreproduced the composition dependence of both quantities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[529.0, 2, 'um', 11],[314.0, 10, 'nm', 8],[278.0, 3, 'to', 7],[276.0, 5, ',', 7],[89.0, 20, 'and', 2],[88.0, 30, 'at', 2],[42.0, 2, 'than', 0]

TiSe2
###Controlling many-body states by the electric-field effect in a two-dimensional material|Linjun Li,Eoin C. T. O Farrell,Kianping Loh,Goki Eda,Barbaros Ozyilmaz,Antonio H. Castro Neto###
(1824369, 1824371)
 1TTiSe2 is a prototypical 2D material that shows charge density wave(CD<missing VAR>W) andsuperconductivity in its phase diagram, presenting several similarities withother layered systems such as copper oxides, iron pnictides, crystals ofrare-earth and actinide atoms.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[3.0, 1, 'T', 0],[7.0, 2, 'D', 0],[88.0, 1, 'T', 1],[104.0, 10, 'nm', 1],[114.0, 2, 'D', 1],[153.0, 170, 'K', 1],[156.0, 40, 'K', 1],[186.0, 0, 'K', 1],[191.0, 3, 'K', 1],[323.0, 2, 'D', 3],[409.0, 2, 'D', 5]

C
###Controlling many-body states by the electric-field effect in a two-dimensional material|Linjun Li,Eoin C. T. O Farrell,Kianping Loh,Goki Eda,Barbaros Ozyilmaz,Antonio H. Castro Neto###
(1824392, 1824392)
 1TTiSe2 is a prototypical 2D material that shows charge density wave(CD<missing VAR>W) andsuperconductivity in its phase diagram, presenting several similarities withother layered systems such as copper oxides, iron pnictides, crystals ofrare-earth and actinide atoms.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 1, 'T', 0],[14.0, 2, 'D', 0],[67.0, 1, 'T', 1],[83.0, 10, 'nm', 1],[93.0, 2, 'D', 1],[132.0, 170, 'K', 1],[135.0, 40, 'K', 1],[165.0, 0, 'K', 1],[170.0, 3, 'K', 1],[302.0, 2, 'D', 3],[388.0, 2, 'D', 5]

W
###Controlling many-body states by the electric-field effect in a two-dimensional material|Linjun Li,Eoin C. T. O Farrell,Kianping Loh,Goki Eda,Barbaros Ozyilmaz,Antonio H. Castro Neto###
(1824394, 1824394)
 1TTiSe2 is a prototypical 2D material that shows charge density wave(CD<missing VAR>W) andsuperconductivity in its phase diagram, presenting several similarities withother layered systems such as copper oxides, iron pnictides, crystals ofrare-earth and actinide atoms.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[28.0, 1, 'T', 0],[16.0, 2, 'D', 0],[65.0, 1, 'T', 1],[81.0, 10, 'nm', 1],[91.0, 2, 'D', 1],[130.0, 170, 'K', 1],[133.0, 40, 'K', 1],[163.0, 0, 'K', 1],[168.0, 3, 'K', 1],[300.0, 2, 'D', 3],[386.0, 2, 'D', 5]

TiSe2
###Controlling many-body states by the electric-field effect in a two-dimensional material|Linjun Li,Eoin C. T. O Farrell,Kianping Loh,Goki Eda,Barbaros Ozyilmaz,Antonio H. Castro Neto###
(1824461, 1824463)
 By studying 1T TiSe2 single crystals withthicknesses of 10 nm or less, encapsulated in 2D layers of hexagonal boronnitride, we achieve unprecedented control over the CD<missing VAR>W transition temperature,tuned from 170 K to 40 K, and over the superconductivity transitiontemperature, tuned from a quantum critical point at 0 K up to 3 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 1, 'T', 1],[83.0, 2, 'D', 1],[2.0, 1, 'T', 0],[12.0, 10, 'nm', 0],[22.0, 2, 'D', 0],[61.0, 170, 'K', 0],[64.0, 40, 'K', 0],[94.0, 0, 'K', 0],[99.0, 3, 'K', 0],[231.0, 2, 'D', 2],[317.0, 2, 'D', 4]

C
###Controlling many-body states by the electric-field effect in a two-dimensional material|Linjun Li,Eoin C. T. O Farrell,Kianping Loh,Goki Eda,Barbaros Ozyilmaz,Antonio H. Castro Neto###
(1824511, 1824511)
 By studying 1T TiSe2 single crystals withthicknesses of 10 nm or less, encapsulated in 2D layers of hexagonal boronnitride, we achieve unprecedented control over the CD<missing VAR>W transition temperature,tuned from 170 K to 40 K, and over the superconductivity transitiontemperature, tuned from a quantum critical point at 0 K up to 3 K.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 1, 'T', 1],[133.0, 2, 'D', 1],[52.0, 1, 'T', 0],[36.0, 10, 'nm', 0],[26.0, 2, 'D', 0],[13.0, 170, 'K', 0],[16.0, 40, 'K', 0],[46.0, 0, 'K', 0],[51.0, 3, 'K', 0],[183.0, 2, 'D', 2],[269.0, 2, 'D', 4]

W
###Controlling many-body states by the electric-field effect in a two-dimensional material|Linjun Li,Eoin C. T. O Farrell,Kianping Loh,Goki Eda,Barbaros Ozyilmaz,Antonio H. Castro Neto###
(1824513, 1824513)
 By studying 1T TiSe2 single crystals withthicknesses of 10 nm or less, encapsulated in 2D layers of hexagonal boronnitride, we achieve unprecedented control over the CD<missing VAR>W transition temperature,tuned from 170 K to 40 K, and over the superconductivity transitiontemperature, tuned from a quantum critical point at 0 K up to 3 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 1, 'T', 1],[135.0, 2, 'D', 1],[54.0, 1, 'T', 0],[38.0, 10, 'nm', 0],[28.0, 2, 'D', 0],[11.0, 170, 'K', 0],[14.0, 40, 'K', 0],[44.0, 0, 'K', 0],[49.0, 3, 'K', 0],[181.0, 2, 'D', 2],[267.0, 2, 'D', 4]

TiSe2
###Controlling many-body states by the electric-field effect in a two-dimensional material|Linjun Li,Eoin C. T. O Farrell,Kianping Loh,Goki Eda,Barbaros Ozyilmaz,Antonio H. Castro Neto###
(1824570, 1824572)
 Electricallydriving TiSe2 over different ordered electronic phases allows us to study thedetails of the phase transitions between many-body states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[204.0, 1, 'T', 2],[192.0, 2, 'D', 2],[111.0, 1, 'T', 1],[95.0, 10, 'nm', 1],[85.0, 2, 'D', 1],[46.0, 170, 'K', 1],[43.0, 40, 'K', 1],[13.0, 0, 'K', 1],[8.0, 3, 'K', 1],[122.0, 2, 'D', 1],[208.0, 2, 'D', 3]

C
###Controlling many-body states by the electric-field effect in a two-dimensional material|Linjun Li,Eoin C. T. O Farrell,Kianping Loh,Goki Eda,Barbaros Ozyilmaz,Antonio H. Castro Neto###
(1824730, 1824730)
 We infer thatthis superconductivity matrix is supported by a matrix of incommensurate CD<missing VAR>Wstates embedded in the commensurate CD<missing VAR>W states.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[364.0, 1, 'T', 4],[352.0, 2, 'D', 4],[271.0, 1, 'T', 3],[255.0, 10, 'nm', 3],[245.0, 2, 'D', 3],[206.0, 170, 'K', 3],[203.0, 40, 'K', 3],[173.0, 0, 'K', 3],[168.0, 3, 'K', 3],[36.0, 2, 'D', 1],[50.0, 2, 'D', 1]

W
###Controlling many-body states by the electric-field effect in a two-dimensional material|Linjun Li,Eoin C. T. O Farrell,Kianping Loh,Goki Eda,Barbaros Ozyilmaz,Antonio H. Castro Neto###
(1824732, 1824732)
 We infer thatthis superconductivity matrix is supported by a matrix of incommensurate CD<missing VAR>Wstates embedded in the commensurate CD<missing VAR>W states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[366.0, 1, 'T', 4],[354.0, 2, 'D', 4],[273.0, 1, 'T', 3],[257.0, 10, 'nm', 3],[247.0, 2, 'D', 3],[208.0, 170, 'K', 3],[205.0, 40, 'K', 3],[175.0, 0, 'K', 3],[170.0, 3, 'K', 3],[38.0, 2, 'D', 1],[48.0, 2, 'D', 1]

C
###Controlling many-body states by the electric-field effect in a two-dimensional material|Linjun Li,Eoin C. T. O Farrell,Kianping Loh,Goki Eda,Barbaros Ozyilmaz,Antonio H. Castro Neto###
(1824745, 1824745)
 We infer thatthis superconductivity matrix is supported by a matrix of incommensurate CD<missing VAR>Wstates embedded in the commensurate CD<missing VAR>W states.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[379.0, 1, 'T', 4],[367.0, 2, 'D', 4],[286.0, 1, 'T', 3],[270.0, 10, 'nm', 3],[260.0, 2, 'D', 3],[221.0, 170, 'K', 3],[218.0, 40, 'K', 3],[188.0, 0, 'K', 3],[183.0, 3, 'K', 3],[51.0, 2, 'D', 1],[35.0, 2, 'D', 1]

W
###Controlling many-body states by the electric-field effect in a two-dimensional material|Linjun Li,Eoin C. T. O Farrell,Kianping Loh,Goki Eda,Barbaros Ozyilmaz,Antonio H. Castro Neto###
(1824747, 1824747)
 We infer thatthis superconductivity matrix is supported by a matrix of incommensurate CD<missing VAR>Wstates embedded in the commensurate CD<missing VAR>W states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[381.0, 1, 'T', 4],[369.0, 2, 'D', 4],[288.0, 1, 'T', 3],[272.0, 10, 'nm', 3],[262.0, 2, 'D', 3],[223.0, 170, 'K', 3],[220.0, 40, 'K', 3],[190.0, 0, 'K', 3],[185.0, 3, 'K', 3],[53.0, 2, 'D', 1],[33.0, 2, 'D', 1]

Co/Cu
###Giant magnetoresistance and structure of electrodeposited Co/Cu multilayers: the influence of layer thicknesses and Cu deposition potential|N. Rajasekaran,J. Mani,B. G. Tóth,G. Molnár,S. Mohan,L. Péter,I. Bakonyi###
(1824806, 1824808)
Giant magnetoresistance and structure of electrodeposited Co/Cu multilayers the influence of layer thicknesses and Cu deposition potential.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[153.0, 2, 'nm', 2],[195.0, -20, '%', 3]

Cu
###Giant magnetoresistance and structure of electrodeposited Co/Cu multilayers: the influence of layer thicknesses and Cu deposition potential|N. Rajasekaran,J. Mani,B. G. Tóth,G. Molnár,S. Mohan,L. Péter,I. Bakonyi###
(1824824, 1824824)
Giant magnetoresistance and structure of electrodeposited Co/Cu multilayers the influence of layer thicknesses and Cu deposition potential.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 2, 'nm', 2],[179.0, -20, '%', 3]

Co/Cu
###Giant magnetoresistance and structure of electrodeposited Co/Cu multilayers: the influence of layer thicknesses and Cu deposition potential|N. Rajasekaran,J. Mani,B. G. Tóth,G. Molnár,S. Mohan,L. Péter,I. Bakonyi###
(1824856, 1824858)
 The giant magnetoresistance (GMR) and structure was investigated forelectrodeposited Co/Cu multilayers prepared by a conventionalgalvanostatic/potentiostatic pulse combination from a pure sulfate electrolytewith various layer thicknesses, total multilayer thickness and Cu depositionpotential.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[103.0, 2, 'nm', 1],[145.0, -20, '%', 2]

Cu
###Giant magnetoresistance and structure of electrodeposited Co/Cu multilayers: the influence of layer thicknesses and Cu deposition potential|N. Rajasekaran,J. Mani,B. G. Tóth,G. Molnár,S. Mohan,L. Péter,I. Bakonyi###
(1824907, 1824907)
 The giant magnetoresistance (GMR) and structure was investigated forelectrodeposited Co/Cu multilayers prepared by a conventionalgalvanostatic/potentiostatic pulse combination from a pure sulfate electrolytewith various layer thicknesses, total multilayer thickness and Cu depositionpotential.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 2, 'nm', 1],[96.0, -20, '%', 2]

F
###Giant magnetoresistance and structure of electrodeposited Co/Cu multilayers: the influence of layer thicknesses and Cu deposition potential|N. Rajasekaran,J. Mani,B. G. Tóth,G. Molnár,S. Mohan,L. Péter,I. Bakonyi###
(1825048, 1825048)
The observed GMR was found to be dominated by themultilayer-like ferromagnetic (FM) contribution even for multilayers withoutvisible superlattice satellites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[87.0, 2, 'nm', 2],[45.0, -20, '%', 1]

SP
###Giant magnetoresistance and structure of electrodeposited Co/Cu multilayers: the influence of layer thicknesses and Cu deposition potential|N. Rajasekaran,J. Mani,B. G. Tóth,G. Molnár,S. Mohan,L. Péter,I. Bakonyi###
(1825086, 1825087)
 There was always also a modestsuperparamagnetic (SPM) contribution to the GMR and this term was the largestfor multilayers with very thin (0.5 nm) magnetic layers containg apparently asmall amount of magnetically decoupled SPM<missing VAR> regions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 2, 'nm', 3],[83.0, -20, '%', 2]

SP
###Giant magnetoresistance and structure of electrodeposited Co/Cu multilayers: the influence of layer thicknesses and Cu deposition potential|N. Rajasekaran,J. Mani,B. G. Tóth,G. Molnár,S. Mohan,L. Péter,I. Bakonyi###
(1825151, 1825152)
 There was always also a modestsuperparamagnetic (SPM) contribution to the GMR and this term was the largestfor multilayers with very thin (0.5 nm) magnetic layers containg apparently asmall amount of magnetically decoupled SPM<missing VAR> regions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[190.0, 2, 'nm', 3],[148.0, -20, '%', 2]

No
###Giant magnetoresistance and structure of electrodeposited Co/Cu multilayers: the influence of layer thicknesses and Cu deposition potential|N. Rajasekaran,J. Mani,B. G. Tóth,G. Molnár,S. Mohan,L. Péter,I. Bakonyi###
(1825158, 1825158)
 No oscillatory GMR behaviorwith spacer thickness was observed at any magnetic layer thickness.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0
[197.0, 2, 'nm', 4],[155.0, -20, '%', 3]

(H)
###Giant magnetoresistance and structure of electrodeposited Co/Cu multilayers: the influence of layer thicknesses and Cu deposition potential|N. Rajasekaran,J. Mani,B. G. Tóth,G. Molnár,S. Mohan,L. Péter,I. Bakonyi###
(1825219, 1825221)
 Thesaturation of the coercivity as measured by the peak position of the MR(H)curves indicated a complete decoupling of magnetic layers for large spacerthicknesses.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[258.0, 2, 'nm', 5],[216.0, -20, '%', 4]

SP
###Giant magnetoresistance and structure of electrodeposited Co/Cu multilayers: the influence of layer thicknesses and Cu deposition potential|N. Rajasekaran,J. Mani,B. G. Tóth,G. Molnár,S. Mohan,L. Péter,I. Bakonyi###
(1825281, 1825282)
 The GMR increased with total multilayer thickness which could beascribed to an increasing SPM<missing VAR> contribution to the GMR due to an increasingsurface roughness, also indicated by the increasing coercivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[320.0, 2, 'nm', 6],[278.0, -20, '%', 5]

Cu
###Giant magnetoresistance and structure of electrodeposited Co/Cu multilayers: the influence of layer thicknesses and Cu deposition potential|N. Rajasekaran,J. Mani,B. G. Tóth,G. Molnár,S. Mohan,L. Péter,I. Bakonyi###
(1825329, 1825329)
 For multilayerswith Cu layers deposited at more and more positive potentials, the GMRFM<missing VAR> termincreased and the GMRSPM<missing VAR> term decreased.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[368.0, 2, 'nm', 7],[326.0, -20, '%', 6]

F
###Giant magnetoresistance and structure of electrodeposited Co/Cu multilayers: the influence of layer thicknesses and Cu deposition potential|N. Rajasekaran,J. Mani,B. G. Tóth,G. Molnár,S. Mohan,L. Péter,I. Bakonyi###
(1825353, 1825353)
 For multilayerswith Cu layers deposited at more and more positive potentials, the GMRFM<missing VAR> termincreased and the GMRSPM<missing VAR> term decreased.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[392.0, 2, 'nm', 7],[350.0, -20, '%', 6]

SP
###Giant magnetoresistance and structure of electrodeposited Co/Cu multilayers: the influence of layer thicknesses and Cu deposition potential|N. Rajasekaran,J. Mani,B. G. Tóth,G. Molnár,S. Mohan,L. Péter,I. Bakonyi###
(1825368, 1825369)
 For multilayerswith Cu layers deposited at more and more positive potentials, the GMRFM<missing VAR> termincreased and the GMRSPM<missing VAR> term decreased.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[407.0, 2, 'nm', 7],[365.0, -20, '%', 6]

At
###Giant magnetoresistance and structure of electrodeposited Co/Cu multilayers: the influence of layer thicknesses and Cu deposition potential|N. Rajasekaran,J. Mani,B. G. Tóth,G. Molnár,S. Mohan,L. Péter,I. Bakonyi###
(1825377, 1825377)
 At the same time, a correspondingreduction of surface roughness measured with atomic force microscopy indicatedan improvement of the multilayer structural quality which was, however, notaccompanied by an increase of the superlattice reflection intensities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[416.0, 2, 'nm', 8],[374.0, -20, '%', 7]

ZnO
###Quantum-interference transport through surface layers of indium-doped ZnO nanowires|Shao-Pin Chiu,Jia G. Lu,Juhn-Jong Lin###
(1825482, 1825483)
Quantum-interference transport through surface layers of indium-doped ZnO nanowires.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[382.0, 1, 'D', 7],[456.0, 2, 'D', 8],[509.0, 2, 'D', 9],[566.0, 1, 'D', 10],[596.0, 1, 'K', 10]

ZnO
###Quantum-interference transport through surface layers of indium-doped ZnO nanowires|Shao-Pin Chiu,Jia G. Lu,Juhn-Jong Lin###
(1825498, 1825499)
 We have fabricated indium-doped ZnO (IZ<missing VAR>O) nanowires (NWs) and carried out4-probe electrical-transport measurements at low temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[366.0, 1, 'D', 6],[440.0, 2, 'D', 7],[493.0, 2, 'D', 8],[550.0, 1, 'D', 9],[580.0, 1, 'K', 9]

I
###Quantum-interference transport through surface layers of indium-doped ZnO nanowires|Shao-Pin Chiu,Jia G. Lu,Juhn-Jong Lin###
(1825502, 1825502)
 We have fabricated indium-doped ZnO (IZ<missing VAR>O) nanowires (NWs) and carried out4-probe electrical-transport measurements at low temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[363.0, 1, 'D', 6],[437.0, 2, 'D', 7],[490.0, 2, 'D', 8],[547.0, 1, 'D', 9],[577.0, 1, 'K', 9]

O
###Quantum-interference transport through surface layers of indium-doped ZnO nanowires|Shao-Pin Chiu,Jia G. Lu,Juhn-Jong Lin###
(1825504, 1825504)
 We have fabricated indium-doped ZnO (IZ<missing VAR>O) nanowires (NWs) and carried out4-probe electrical-transport measurements at low temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[361.0, 1, 'D', 6],[435.0, 2, 'D', 7],[488.0, 2, 'D', 8],[545.0, 1, 'D', 9],[575.0, 1, 'K', 9]

N
###Quantum-interference transport through surface layers of indium-doped ZnO nanowires|Shao-Pin Chiu,Jia G. Lu,Juhn-Jong Lin###
(1825510, 1825510)
 We have fabricated indium-doped ZnO (IZ<missing VAR>O) nanowires (NWs) and carried out4-probe electrical-transport measurements at low temperatures.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[355.0, 1, 'D', 6],[429.0, 2, 'D', 7],[482.0, 2, 'D', 8],[539.0, 1, 'D', 9],[569.0, 1, 'K', 9]

N
###Quantum-interference transport through surface layers of indium-doped ZnO nanowires|Shao-Pin Chiu,Jia G. Lu,Juhn-Jong Lin###
(1825540, 1825540)
 The NWs revealcharge conduction behavior characteristic of disordered metals.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[325.0, 1, 'D', 5],[399.0, 2, 'D', 6],[452.0, 2, 'D', 7],[509.0, 1, 'D', 8],[539.0, 1, 'K', 8]

In
###Quantum-interference transport through surface layers of indium-doped ZnO nanowires|Shao-Pin Chiu,Jia G. Lu,Juhn-Jong Lin###
(1825561, 1825561)
 In addition tothe T<missing VAR> dependence of resistance R<missing VAR>, we have measured the magnetoresistances(MR) in perpendicular and parallel magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[304.0, 1, 'D', 4],[378.0, 2, 'D', 5],[431.0, 2, 'D', 6],[488.0, 1, 'D', 7],[518.0, 1, 'K', 7]

W
###Quantum-interference transport through surface layers of indium-doped ZnO nanowires|Shao-Pin Chiu,Jia G. Lu,Juhn-Jong Lin###
(1825683, 1825683)
 Our R(T) and MR data indifferent T<missing VAR> intervals are consistent with the theoretical predictions of theone- (1D), two- (2D) or three-dimensional (3D) weak-localization (WL) and theelectron-electron interaction (EEI) effects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[182.0, 1, 'D', 3],[256.0, 2, 'D', 4],[309.0, 2, 'D', 5],[366.0, 1, 'D', 6],[396.0, 1, 'K', 6]

I
###Quantum-interference transport through surface layers of indium-doped ZnO nanowires|Shao-Pin Chiu,Jia G. Lu,Juhn-Jong Lin###
(1825701, 1825701)
 Our R(T) and MR data indifferent T<missing VAR> intervals are consistent with the theoretical predictions of theone- (1D), two- (2D) or three-dimensional (3D) weak-localization (WL) and theelectron-electron interaction (EEI) effects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 1, 'D', 3],[238.0, 2, 'D', 4],[291.0, 2, 'D', 5],[348.0, 1, 'D', 6],[378.0, 1, 'K', 6]

In
###Quantum-interference transport through surface layers of indium-doped ZnO nanowires|Shao-Pin Chiu,Jia G. Lu,Juhn-Jong Lin###
(1825707, 1825707)
 In particular, a fewdimensionality crossovers in the two effects are observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[158.0, 1, 'D', 2],[232.0, 2, 'D', 3],[285.0, 2, 'D', 4],[342.0, 1, 'D', 5],[372.0, 1, 'K', 5]

I
###Quantum-interference transport through surface layers of indium-doped ZnO nanowires|Shao-Pin Chiu,Jia G. Lu,Juhn-Jong Lin###
(1825768, 1825768)
 These crossoverphenomena are consistent with the model of a core-shell-like structure inindividual IZ<missing VAR>O NWs, where an outer shell of a thickness t<missing VAR> (simeq 15-17 nm)is responsible for the quantum-interference transport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 1, 'D', 1],[171.0, 2, 'D', 2],[224.0, 2, 'D', 3],[281.0, 1, 'D', 4],[311.0, 1, 'K', 4]

O
###Quantum-interference transport through surface layers of indium-doped ZnO nanowires|Shao-Pin Chiu,Jia G. Lu,Juhn-Jong Lin###
(1825770, 1825770)
 These crossoverphenomena are consistent with the model of a core-shell-like structure inindividual IZ<missing VAR>O NWs, where an outer shell of a thickness t<missing VAR> (simeq 15-17 nm)is responsible for the quantum-interference transport.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 1, 'D', 1],[169.0, 2, 'D', 2],[222.0, 2, 'D', 3],[279.0, 1, 'D', 4],[309.0, 1, 'K', 4]

N
###Quantum-interference transport through surface layers of indium-doped ZnO nanowires|Shao-Pin Chiu,Jia G. Lu,Juhn-Jong Lin###
(1825772, 1825772)
 These crossoverphenomena are consistent with the model of a core-shell-like structure inindividual IZ<missing VAR>O NWs, where an outer shell of a thickness t<missing VAR> (simeq 15-17 nm)is responsible for the quantum-interference transport.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 1, 'D', 1],[167.0, 2, 'D', 2],[220.0, 2, 'D', 3],[277.0, 1, 'D', 4],[307.0, 1, 'K', 4]

In
###Quantum-interference transport through surface layers of indium-doped ZnO nanowires|Shao-Pin Chiu,Jia G. Lu,Juhn-Jong Lin###
(1825818, 1825818)
 In the WL<missing VAR> effect, as theelectron dephasing length L<missing VAR>phi gradually decreases with increasing T<missing VAR> fromthe lowest measurement temperatures, a 1D-to-2D<missing VAR> dimensionality crossover takesplace around a characteristic temperature where L<missing VAR>phi approximately equalsd<missing VAR>, an effective NW diameter which is slightly smaller than the geometricdiameter.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 1, 'D', 0],[121.0, 2, 'D', 1],[174.0, 2, 'D', 2],[231.0, 1, 'D', 3],[261.0, 1, 'K', 3]

W
###Quantum-interference transport through surface layers of indium-doped ZnO nanowires|Shao-Pin Chiu,Jia G. Lu,Juhn-Jong Lin###
(1825822, 1825822)
 In the WL<missing VAR> effect, as theelectron dephasing length L<missing VAR>phi gradually decreases with increasing T<missing VAR> fromthe lowest measurement temperatures, a 1D-to-2D<missing VAR> dimensionality crossover takesplace around a characteristic temperature where L<missing VAR>phi approximately equalsd<missing VAR>, an effective NW diameter which is slightly smaller than the geometricdiameter.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 1, 'D', 0],[117.0, 2, 'D', 1],[170.0, 2, 'D', 2],[227.0, 1, 'D', 3],[257.0, 1, 'K', 3]

NW
###Quantum-interference transport through surface layers of indium-doped ZnO nanowires|Shao-Pin Chiu,Jia G. Lu,Juhn-Jong Lin###
(1825906, 1825907)
 In the WL<missing VAR> effect, as theelectron dephasing length L<missing VAR>phi gradually decreases with increasing T<missing VAR> fromthe lowest measurement temperatures, a 1D-to-2D<missing VAR> dimensionality crossover takesplace around a characteristic temperature where L<missing VAR>phi approximately equalsd<missing VAR>, an effective NW diameter which is slightly smaller than the geometricdiameter.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 1, 'D', 0],[32.0, 2, 'D', 1],[85.0, 2, 'D', 2],[142.0, 1, 'D', 3],[172.0, 1, 'K', 3]

As
###Quantum-interference transport through surface layers of indium-doped ZnO nanowires|Shao-Pin Chiu,Jia G. Lu,Juhn-Jong Lin###
(1825929, 1825929)
 As T<missing VAR> further increases, a 2D-to-3D<missing VAR> dimensionality crossover occursaround another characteristic temperature where L<missing VAR>phi approximately equalst<missing VAR> (< d).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 1, 'D', 1],[10.0, 2, 'D', 0],[63.0, 2, 'D', 1],[120.0, 1, 'D', 2],[150.0, 1, 'K', 2]

In
###Quantum-interference transport through surface layers of indium-doped ZnO nanowires|Shao-Pin Chiu,Jia G. Lu,Juhn-Jong Lin###
(1825980, 1825980)
 In the EEI effect, a 2D-to-3D<missing VAR> dimensionality crossover takes placewhen the thermal diffusion length LT progressively decreases with increasingT<missing VAR> and approaches t<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 1, 'D', 2],[41.0, 2, 'D', 1],[12.0, 2, 'D', 0],[69.0, 1, 'D', 1],[99.0, 1, 'K', 1]

I
###Quantum-interference transport through surface layers of indium-doped ZnO nanowires|Shao-Pin Chiu,Jia G. Lu,Juhn-Jong Lin###
(1825986, 1825986)
 In the EEI effect, a 2D-to-3D<missing VAR> dimensionality crossover takes placewhen the thermal diffusion length LT progressively decreases with increasingT<missing VAR> and approaches t<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 1, 'D', 2],[47.0, 2, 'D', 1],[6.0, 2, 'D', 0],[63.0, 1, 'D', 1],[93.0, 1, 'K', 1]

I
###Quantum-interference transport through surface layers of indium-doped ZnO nanowires|Shao-Pin Chiu,Jia G. Lu,Juhn-Jong Lin###
(1826053, 1826053)
 However, a crossover to the 1D EEI effect is not seenbecause LT < d<missing VAR> even at T<missing VAR>  1 K in our IZ<missing VAR>O NWs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 1, 'D', 3],[114.0, 2, 'D', 2],[61.0, 2, 'D', 1],[4.0, 1, 'D', 0],[26.0, 1, 'K', 0]

I
###Quantum-interference transport through surface layers of indium-doped ZnO nanowires|Shao-Pin Chiu,Jia G. Lu,Juhn-Jong Lin###
(1826085, 1826085)
 However, a crossover to the 1D EEI effect is not seenbecause LT < d<missing VAR> even at T<missing VAR>  1 K in our IZ<missing VAR>O NWs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[220.0, 1, 'D', 3],[146.0, 2, 'D', 2],[93.0, 2, 'D', 1],[36.0, 1, 'D', 0],[6.0, 1, 'K', 0]

O
###Quantum-interference transport through surface layers of indium-doped ZnO nanowires|Shao-Pin Chiu,Jia G. Lu,Juhn-Jong Lin###
(1826087, 1826087)
 However, a crossover to the 1D EEI effect is not seenbecause LT < d<missing VAR> even at T<missing VAR>  1 K in our IZ<missing VAR>O NWs.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[222.0, 1, 'D', 3],[148.0, 2, 'D', 2],[95.0, 2, 'D', 1],[38.0, 1, 'D', 0],[8.0, 1, 'K', 0]

N
###Quantum-interference transport through surface layers of indium-doped ZnO nanowires|Shao-Pin Chiu,Jia G. Lu,Juhn-Jong Lin###
(1826089, 1826089)
 However, a crossover to the 1D EEI effect is not seenbecause LT < d<missing VAR> even at T<missing VAR>  1 K in our IZ<missing VAR>O NWs.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[224.0, 1, 'D', 3],[150.0, 2, 'D', 2],[97.0, 2, 'D', 1],[40.0, 1, 'D', 0],[10.0, 1, 'K', 0]

Bi2Se3
###Strongly suppressed superconducting proximity effect and ferromagnetism in trilayers of $\rm Bi_2Se_3$ / $\rm SrRuO_3$ / underdoped $\rm YBa_2Cu_3O_x$: A possible new platform for Majorana nano-electronics|Gad Koren###
(1826184, 1826187)
Strongly suppressed superconducting proximity effect and ferromagnetism in trilayers of rm Bi2Se3 / rm SrRuO3 / underdoped rm YBa2Cu3Ox<missing VAR> A possible new platform for Majorana nano-electronics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 20, 'nm', 1],[86.0, 10, 'nm', 1],[97.0, 30, 'nm', 1],[141.0, 75, 'K', 2],[150.0, 65, 'K', 2],[159.0, 150, 'K', 2],[170.0, 200, 'K', 2],[185.0, 60, 'K', 3],[215.0, 40, 'K', 3]

SrRuO3
###Strongly suppressed superconducting proximity effect and ferromagnetism in trilayers of $\rm Bi_2Se_3$ / $\rm SrRuO_3$ / underdoped $\rm YBa_2Cu_3O_x$: A possible new platform for Majorana nano-electronics|Gad Koren###
(1826193, 1826196)
Strongly suppressed superconducting proximity effect and ferromagnetism in trilayers of rm Bi2Se3 / rm SrRuO3 / underdoped rm YBa2Cu3Ox<missing VAR> A possible new platform for Majorana nano-electronics.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 20, 'nm', 1],[77.0, 10, 'nm', 1],[88.0, 30, 'nm', 1],[132.0, 75, 'K', 2],[141.0, 65, 'K', 2],[150.0, 150, 'K', 2],[161.0, 200, 'K', 2],[176.0, 60, 'K', 3],[206.0, 40, 'K', 3]

YBa2Cu3O
###Strongly suppressed superconducting proximity effect and ferromagnetism in trilayers of $\rm Bi_2Se_3$ / $\rm SrRuO_3$ / underdoped $\rm YBa_2Cu_3O_x$: A possible new platform for Majorana nano-electronics|Gad Koren###
(1826204, 1826209)
Strongly suppressed superconducting proximity effect and ferromagnetism in trilayers of rm Bi2Se3 / rm SrRuO3 / underdoped rm YBa2Cu3Ox<missing VAR> A possible new platform for Majorana nano-electronics.
Featurization terminated normally.
0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 20, 'nm', 1],[64.0, 10, 'nm', 1],[75.0, 30, 'nm', 1],[119.0, 75, 'K', 2],[128.0, 65, 'K', 2],[137.0, 150, 'K', 2],[148.0, 200, 'K', 2],[163.0, 60, 'K', 3],[193.0, 40, 'K', 3]

Bi2Se3
###Strongly suppressed superconducting proximity effect and ferromagnetism in trilayers of $\rm Bi_2Se_3$ / $\rm SrRuO_3$ / underdoped $\rm YBa_2Cu_3O_x$: A possible new platform for Majorana nano-electronics|Gad Koren###
(1826267, 1826270)
 We report properties of topological insulator - ferromagnet - superconductortrilayers comprised of thin films of 20 nm thick rm Bi2Se3 on 10 nm rmSrRuO3 on 30 nm rm YBa2Cu3Ox<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 20, 'nm', 0],[3.0, 10, 'nm', 0],[14.0, 30, 'nm', 0],[58.0, 75, 'K', 1],[67.0, 65, 'K', 1],[76.0, 150, 'K', 1],[87.0, 200, 'K', 1],[102.0, 60, 'K', 2],[132.0, 40, 'K', 2]

SrRuO3
###Strongly suppressed superconducting proximity effect and ferromagnetism in trilayers of $\rm Bi_2Se_3$ / $\rm SrRuO_3$ / underdoped $\rm YBa_2Cu_3O_x$: A possible new platform for Majorana nano-electronics|Gad Koren###
(1826278, 1826281)
 We report properties of topological insulator - ferromagnet - superconductortrilayers comprised of thin films of 20 nm thick rm Bi2Se3 on 10 nm rmSrRuO3 on 30 nm rm YBa2Cu3Ox<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 20, 'nm', 0],[5.0, 10, 'nm', 0],[3.0, 30, 'nm', 0],[47.0, 75, 'K', 1],[56.0, 65, 'K', 1],[65.0, 150, 'K', 1],[76.0, 200, 'K', 1],[91.0, 60, 'K', 2],[121.0, 40, 'K', 2]

YBa2Cu3O
###Strongly suppressed superconducting proximity effect and ferromagnetism in trilayers of $\rm Bi_2Se_3$ / $\rm SrRuO_3$ / underdoped $\rm YBa_2Cu_3O_x$: A possible new platform for Majorana nano-electronics|Gad Koren###
(1826288, 1826293)
 We report properties of topological insulator - ferromagnet - superconductortrilayers comprised of thin films of 20 nm thick rm Bi2Se3 on 10 nm rmSrRuO3 on 30 nm rm YBa2Cu3Ox<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 20, 'nm', 0],[15.0, 10, 'nm', 0],[4.0, 30, 'nm', 0],[35.0, 75, 'K', 1],[44.0, 65, 'K', 1],[53.0, 150, 'K', 1],[64.0, 200, 'K', 1],[79.0, 60, 'K', 2],[109.0, 40, 'K', 2]

As
###Strongly suppressed superconducting proximity effect and ferromagnetism in trilayers of $\rm Bi_2Se_3$ / $\rm SrRuO_3$ / underdoped $\rm YBa_2Cu_3O_x$: A possible new platform for Majorana nano-electronics|Gad Koren###
(1826297, 1826297)
 As deposited trilayers are underdoped andhave a superconductive transition with rm Tc onset at 75 K, zero resistanceat 65 K, rm T<missing VAR>Cueri at 150 K and rm T<missing VAR> of about 200 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 20, 'nm', 1],[24.0, 10, 'nm', 1],[13.0, 30, 'nm', 1],[31.0, 75, 'K', 0],[40.0, 65, 'K', 0],[49.0, 150, 'K', 0],[60.0, 200, 'K', 0],[75.0, 60, 'K', 1],[105.0, 40, 'K', 1]

YBa2Cu3O
###Strongly suppressed superconducting proximity effect and ferromagnetism in trilayers of $\rm Bi_2Se_3$ / $\rm SrRuO_3$ / underdoped $\rm YBa_2Cu_3O_x$: A possible new platform for Majorana nano-electronics|Gad Koren###
(1826380, 1826385)
 Furtherreannealing under vacuum yields the 60 K phase of rm YBa2Cu3Ox<missing VAR> whichstill has zero resistance below about 40 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 20, 'nm', 2],[107.0, 10, 'nm', 2],[96.0, 30, 'nm', 2],[52.0, 75, 'K', 1],[43.0, 65, 'K', 1],[34.0, 150, 'K', 1],[23.0, 200, 'K', 1],[8.0, 60, 'K', 0],[17.0, 40, 'K', 0]

YBa2Cu3O
###Strongly suppressed superconducting proximity effect and ferromagnetism in trilayers of $\rm Bi_2Se_3$ / $\rm SrRuO_3$ / underdoped $\rm YBa_2Cu_3O_x$: A possible new platform for Majorana nano-electronics|Gad Koren###
(1826564, 1826569)
 All this indicates clearly weak-linksuperconductivity in the resistive bridges between superconductive rmYBa2Cu3Ox<missing VAR> grains via the topological and ferromagnetic cap layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.42857142857142855,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[303.0, 20, 'nm', 5],[291.0, 10, 'nm', 5],[280.0, 30, 'nm', 5],[236.0, 75, 'K', 4],[227.0, 65, 'K', 4],[218.0, 150, 'K', 4],[207.0, 200, 'K', 4],[192.0, 60, 'K', 3],[162.0, 40, 'K', 3]

Bi2Se3
###Strongly suppressed superconducting proximity effect and ferromagnetism in trilayers of $\rm Bi_2Se_3$ / $\rm SrRuO_3$ / underdoped $\rm YBa_2Cu_3O_x$: A possible new platform for Majorana nano-electronics|Gad Koren###
(1826617, 1826620)
Comparing our results to those of a reference trilayer with the topologicalrm Bi2Se3 layer substituted by a non-superconducting highly overdoped rmLa1.65Sr0.35CuO4, indicates that the superconductive proximity effectas well as ferromagnetism in the topological trilayer are actually stronglysuppressed compared to the non-topological reference trilayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[356.0, 20, 'nm', 6],[344.0, 10, 'nm', 6],[333.0, 30, 'nm', 6],[289.0, 75, 'K', 5],[280.0, 65, 'K', 5],[271.0, 150, 'K', 5],[260.0, 200, 'K', 5],[245.0, 60, 'K', 4],[215.0, 40, 'K', 4]

La1.65Sr0.35CuO4
###Strongly suppressed superconducting proximity effect and ferromagnetism in trilayers of $\rm Bi_2Se_3$ / $\rm SrRuO_3$ / underdoped $\rm YBa_2Cu_3O_x$: A possible new platform for Majorana nano-electronics|Gad Koren###
(1826641, 1826647)
Comparing our results to those of a reference trilayer with the topologicalrm Bi2Se3 layer substituted by a non-superconducting highly overdoped rmLa1.65Sr0.35CuO4, indicates that the superconductive proximity effectas well as ferromagnetism in the topological trilayer are actually stronglysuppressed compared to the non-topological reference trilayer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0.049999999999999996,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2357142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[380.0, 20, 'nm', 6],[368.0, 10, 'nm', 6],[357.0, 30, 'nm', 6],[313.0, 75, 'K', 5],[304.0, 65, 'K', 5],[295.0, 150, 'K', 5],[284.0, 200, 'K', 5],[269.0, 60, 'K', 4],[239.0, 40, 'K', 4]

S
###Strongly suppressed superconducting proximity effect and ferromagnetism in trilayers of $\rm Bi_2Se_3$ / $\rm SrRuO_3$ / underdoped $\rm YBa_2Cu_3O_x$: A possible new platform for Majorana nano-electronics|Gad Koren###
(1826735, 1826735)
 This strongsuppression is likely to originate in strong proximity induced edge currents inthe SR<missing VAR>O/YBCO layer that can lead to Majorana bound states, a possible signatureof which is observed in the present study as zero bias conductance peaks.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[474.0, 20, 'nm', 7],[462.0, 10, 'nm', 7],[451.0, 30, 'nm', 7],[407.0, 75, 'K', 6],[398.0, 65, 'K', 6],[389.0, 150, 'K', 6],[378.0, 200, 'K', 6],[363.0, 60, 'K', 5],[333.0, 40, 'K', 5]

O/YBCO
###Strongly suppressed superconducting proximity effect and ferromagnetism in trilayers of $\rm Bi_2Se_3$ / $\rm SrRuO_3$ / underdoped $\rm YBa_2Cu_3O_x$: A possible new platform for Majorana nano-electronics|Gad Koren###
(1826737, 1826742)
 This strongsuppression is likely to originate in strong proximity induced edge currents inthe SR<missing VAR>O/YBCO layer that can lead to Majorana bound states, a possible signatureof which is observed in the present study as zero bias conductance peaks.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[476.0, 20, 'nm', 7],[464.0, 10, 'nm', 7],[453.0, 30, 'nm', 7],[409.0, 75, 'K', 6],[400.0, 65, 'K', 6],[391.0, 150, 'K', 6],[380.0, 200, 'K', 6],[365.0, 60, 'K', 5],[335.0, 40, 'K', 5]

In
###Pure spin currents in magnetically ordered insulator/normal metal heterostructures|Matthias Althammer###
(1827176, 1827176)
 In this article, we utilize a common theoreticalframework to explain all four effects and explain important material systems(especially rare-earth iron garnets) used in the experiments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Theory of Ultrafast Spin--Charge Quantum Dynamics in Strongly Correlated Systems Controlled by Femtosecond Photoexcitation: an Application to Insulating Antiferromagnetic Manganites|P. C. Lingos,M. D. Kapetanakis,M. Mootz,J. Wang,I. E. Perakis###
(1827736, 1827736)
 We demontrate, inparticular, that photoexcitation of composite fermion quasiparticles inducesquasi-instantaneous spin canting that quenches the energy gap of theantiferromagnetic insulator and acts as a nonadiabatic initial condition thattriggers non-thermal lattice dynamics leading to an insulator to metal andantiferromagnetic (AFM) to ferromagnetic (FM) transitions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 100, 'fs', 1]

F
###Theory of Ultrafast Spin--Charge Quantum Dynamics in Strongly Correlated Systems Controlled by Femtosecond Photoexcitation: an Application to Insulating Antiferromagnetic Manganites|P. C. Lingos,M. D. Kapetanakis,M. Mootz,J. Wang,I. E. Perakis###
(1827745, 1827745)
 We demontrate, inparticular, that photoexcitation of composite fermion quasiparticles inducesquasi-instantaneous spin canting that quenches the energy gap of theantiferromagnetic insulator and acts as a nonadiabatic initial condition thattriggers non-thermal lattice dynamics leading to an insulator to metal andantiferromagnetic (AFM) to ferromagnetic (FM) transitions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 100, 'fs', 1]

C
###Theory of Ultrafast Spin--Charge Quantum Dynamics in Strongly Correlated Systems Controlled by Femtosecond Photoexcitation: an Application to Insulating Antiferromagnetic Manganites|P. C. Lingos,M. D. Kapetanakis,M. Mootz,J. Wang,I. E. Perakis###
(1827804, 1827804)
 Our theoreticalpredictions are consistent with recent ultrafast pump-probe spectroscopyexperiments that revealed a magnetic phase transition during 100fs laser pulsephotoexcitation of the CE<missing VAR>--type AFM<missing VAR> insulating phase of colossalmagnetoresistive manganites.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 100, 'fs', 0]

F
###Theory of Ultrafast Spin--Charge Quantum Dynamics in Strongly Correlated Systems Controlled by Femtosecond Photoexcitation: an Application to Insulating Antiferromagnetic Manganites|P. C. Lingos,M. D. Kapetanakis,M. Mootz,J. Wang,I. E. Perakis###
(1827811, 1827811)
 Our theoreticalpredictions are consistent with recent ultrafast pump-probe spectroscopyexperiments that revealed a magnetic phase transition during 100fs laser pulsephotoexcitation of the CE<missing VAR>--type AFM<missing VAR> insulating phase of colossalmagnetoresistive manganites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 100, 'fs', 0]

In
###Theory of Ultrafast Spin--Charge Quantum Dynamics in Strongly Correlated Systems Controlled by Femtosecond Photoexcitation: an Application to Insulating Antiferromagnetic Manganites|P. C. Lingos,M. D. Kapetanakis,M. Mootz,J. Wang,I. E. Perakis###
(1827828, 1827828)
 In particular, experiment observes two distinctcharge relaxation components, fs and ps, with nonlinear threshold dependence ata pump fluence threshold that coincides with that for femtosecond magnetizationphoto excitation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 100, 'fs', 1]

Pt
###Signature of gate-tunable magnetism in graphene grafted with Pt-porphyrins|Chuan Li,Katsuyoshi Komatsu,G. Clave,S. Campidelli,A. Filoramo,S. Gueron,H. Bouchiat###
(1828058, 1828058)
Signature of gate-tunable magnetism in graphene grafted with Pt-porphyrins.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Signature of gate-tunable magnetism in graphene grafted with Pt-porphyrins|Chuan Li,Katsuyoshi Komatsu,G. Clave,S. Campidelli,A. Filoramo,S. Gueron,H. Bouchiat###
(1828145, 1828145)
 In the present work, we show thatPt-porphyrins adsorbed on graphene lead to an enhanced mobility and togate-dependent magnetism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Signature of gate-tunable magnetism in graphene grafted with Pt-porphyrins|Chuan Li,Katsuyoshi Komatsu,G. Clave,S. Campidelli,A. Filoramo,S. Gueron,H. Bouchiat###
(1828161, 1828161)
 In the present work, we show thatPt-porphyrins adsorbed on graphene lead to an enhanced mobility and togate-dependent magnetism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Signature of gate-tunable magnetism in graphene grafted with Pt-porphyrins|Chuan Li,Katsuyoshi Komatsu,G. Clave,S. Campidelli,A. Filoramo,S. Gueron,H. Bouchiat###
(1828270, 1828270)
 In addition, ionized porphyrins carry amagnetic moment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Si
###Signatures of localization in the effective metallic regime of high mobility Si MOSFETs|S. Das Sarma,E. H. Hwang,K. Kechedzhi,L. A. Tracy###
(1828684, 1828684)
Signatures of localization in the effective metallic regime of high mobility Si M<missing VAR>OSFE<missing VAR>Ts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 2, 'D', 1],[170.0, 2, 'D', 2],[186.0, 2, 'D', 2]

OSF
###Signatures of localization in the effective metallic regime of high mobility Si MOSFETs|S. Das Sarma,E. H. Hwang,K. Kechedzhi,L. A. Tracy###
(1828687, 1828689)
Signatures of localization in the effective metallic regime of high mobility Si M<missing VAR>OSFE<missing VAR>Ts.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 2, 'D', 1],[165.0, 2, 'D', 2],[181.0, 2, 'D', 2]

Si
###Signatures of localization in the effective metallic regime of high mobility Si MOSFETs|S. Das Sarma,E. H. Hwang,K. Kechedzhi,L. A. Tracy###
(1828736, 1828736)
 Combining experimental data, numerical transport calculations, andtheoretical analysis, we study the temperature-dependent resistivity ofhigh-mobility 2D Si M<missing VAR>OSFE<missing VAR>Ts to search for signatures of weak localizationinduced quantum corrections in the effective metallic regime above the criticaldensity of the so-called two-dimensional metal-insulator transition (2D MIT).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 2, 'D', 0],[118.0, 2, 'D', 1],[134.0, 2, 'D', 1]

OSF
###Signatures of localization in the effective metallic regime of high mobility Si MOSFETs|S. Das Sarma,E. H. Hwang,K. Kechedzhi,L. A. Tracy###
(1828739, 1828741)
 Combining experimental data, numerical transport calculations, andtheoretical analysis, we study the temperature-dependent resistivity ofhigh-mobility 2D Si M<missing VAR>OSFE<missing VAR>Ts to search for signatures of weak localizationinduced quantum corrections in the effective metallic regime above the criticaldensity of the so-called two-dimensional metal-insulator transition (2D MIT).
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 2, 'D', 0],[113.0, 2, 'D', 1],[129.0, 2, 'D', 1]

I
###Signatures of localization in the effective metallic regime of high mobility Si MOSFETs|S. Das Sarma,E. H. Hwang,K. Kechedzhi,L. A. Tracy###
(1828808, 1828808)
 Combining experimental data, numerical transport calculations, andtheoretical analysis, we study the temperature-dependent resistivity ofhigh-mobility 2D Si M<missing VAR>OSFE<missing VAR>Ts to search for signatures of weak localizationinduced quantum corrections in the effective metallic regime above the criticaldensity of the so-called two-dimensional metal-insulator transition (2D MIT).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 2, 'D', 0],[46.0, 2, 'D', 1],[62.0, 2, 'D', 1]

F
###Signatures of localization in the effective metallic regime of high mobility Si MOSFETs|S. Das Sarma,E. H. Hwang,K. Kechedzhi,L. A. Tracy###
(1829013, 1829013)
 We analyze weak perpendicluar fieldmagnetoresistance data taken in the vicinity of the transition and show thatthey are consistent with weak localization behavior in the strongly disorderedregime k<missing VAR>Fellgtrsim1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[279.0, 2, 'D', 3],[159.0, 2, 'D', 2],[143.0, 2, 'D', 2]

Si
###Signatures of localization in the effective metallic regime of high mobility Si MOSFETs|S. Das Sarma,E. H. Hwang,K. Kechedzhi,L. A. Tracy###
(1829209, 1829209)
 Analyzing the low-T<missing VAR> experimental SiM<missing VAR>OSFET transport data we identify signatures of the putative insulatingbehavior at low temperature and density in the effective metallic phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[475.0, 2, 'D', 6],[355.0, 2, 'D', 5],[339.0, 2, 'D', 5]

OSF
###Signatures of localization in the effective metallic regime of high mobility Si MOSFETs|S. Das Sarma,E. H. Hwang,K. Kechedzhi,L. A. Tracy###
(1829213, 1829215)
 Analyzing the low-T<missing VAR> experimental SiM<missing VAR>OSFET transport data we identify signatures of the putative insulatingbehavior at low temperature and density in the effective metallic phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[479.0, 2, 'D', 6],[359.0, 2, 'D', 5],[343.0, 2, 'D', 5]

FeS
###Strong anisotropy in nearly ideal-tetrahedral superconducting FeS single crystals|Christopher K. H. Borg,Xiuquan Zhou,Christopher Eckberg,Daniel J. Campbell,Shanta R. Saha,Johnpierre Paglione,Efrain E. Rodriguez###
(1829283, 1829284)
Strong anisotropy in nearly ideal-tetrahedral superconducting FeS single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeS
###Strong anisotropy in nearly ideal-tetrahedral superconducting FeS single crystals|Christopher K. H. Borg,Xiuquan Zhou,Christopher Eckberg,Daniel J. Campbell,Shanta R. Saha,Johnpierre Paglione,Efrain E. Rodriguez###
(1829317, 1829318)
 We report the novel preparation of single crystals of tetragonal ironsulfide, FeS, which exhibits a nearly ideal tetrahedral geometry with S--Fe--Sbond angles of 110.2(2) circ and 108.1(2) circ.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Strong anisotropy in nearly ideal-tetrahedral superconducting FeS single crystals|Christopher K. H. Borg,Xiuquan Zhou,Christopher Eckberg,Daniel J. Campbell,Shanta R. Saha,Johnpierre Paglione,Efrain E. Rodriguez###
(1829337, 1829337)
 We report the novel preparation of single crystals of tetragonal ironsulfide, FeS, which exhibits a nearly ideal tetrahedral geometry with S--Fe--Sbond angles of 110.2(2) circ and 108.1(2) circ.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Strong anisotropy in nearly ideal-tetrahedral superconducting FeS single crystals|Christopher K. H. Borg,Xiuquan Zhou,Christopher Eckberg,Daniel J. Campbell,Shanta R. Saha,Johnpierre Paglione,Efrain E. Rodriguez###
(1829340, 1829340)
 We report the novel preparation of single crystals of tetragonal ironsulfide, FeS, which exhibits a nearly ideal tetrahedral geometry with S--Fe--Sbond angles of 110.2(2) circ and 108.1(2) circ.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Strong anisotropy in nearly ideal-tetrahedral superconducting FeS single crystals|Christopher K. H. Borg,Xiuquan Zhou,Christopher Eckberg,Daniel J. Campbell,Shanta R. Saha,Johnpierre Paglione,Efrain E. Rodriguez###
(1829343, 1829343)
 We report the novel preparation of single crystals of tetragonal ironsulfide, FeS, which exhibits a nearly ideal tetrahedral geometry with S--Fe--Sbond angles of 110.2(2) circ and 108.1(2) circ.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Strong anisotropy in nearly ideal-tetrahedral superconducting FeS single crystals|Christopher K. H. Borg,Xiuquan Zhou,Christopher Eckberg,Daniel J. Campbell,Shanta R. Saha,Johnpierre Paglione,Efrain E. Rodriguez###
(1829382, 1829382)
 Grown via hydrothermalde-intercalation of Kx<missing VAR>Fe2-yS2 crystals under basic andreducing conditions, the silver, plate-like crystals of FeS remain stable up to200 circC under air and 250 circC under inert conditions, even thoughthe mineral mackinawite (FeS) is known to be metastable.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe2-yS2
###Strong anisotropy in nearly ideal-tetrahedral superconducting FeS single crystals|Christopher K. H. Borg,Xiuquan Zhou,Christopher Eckberg,Daniel J. Campbell,Shanta R. Saha,Johnpierre Paglione,Efrain E. Rodriguez###
(1829384, 1829389)
 Grown via hydrothermalde-intercalation of Kx<missing VAR>Fe2-yS2 crystals under basic andreducing conditions, the silver, plate-like crystals of FeS remain stable up to200 circC under air and 250 circC under inert conditions, even thoughthe mineral mackinawite (FeS) is known to be metastable.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

FeS
###Strong anisotropy in nearly ideal-tetrahedral superconducting FeS single crystals|Christopher K. H. Borg,Xiuquan Zhou,Christopher Eckberg,Daniel J. Campbell,Shanta R. Saha,Johnpierre Paglione,Efrain E. Rodriguez###
(1829418, 1829419)
 Grown via hydrothermalde-intercalation of Kx<missing VAR>Fe2-yS2 crystals under basic andreducing conditions, the silver, plate-like crystals of FeS remain stable up to200 circC under air and 250 circC under inert conditions, even thoughthe mineral mackinawite (FeS) is known to be metastable.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Strong anisotropy in nearly ideal-tetrahedral superconducting FeS single crystals|Christopher K. H. Borg,Xiuquan Zhou,Christopher Eckberg,Daniel J. Campbell,Shanta R. Saha,Johnpierre Paglione,Efrain E. Rodriguez###
(1829433, 1829433)
 Grown via hydrothermalde-intercalation of Kx<missing VAR>Fe2-yS2 crystals under basic andreducing conditions, the silver, plate-like crystals of FeS remain stable up to200 circC under air and 250 circC under inert conditions, even thoughthe mineral mackinawite (FeS) is known to be metastable.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Strong anisotropy in nearly ideal-tetrahedral superconducting FeS single crystals|Christopher K. H. Borg,Xiuquan Zhou,Christopher Eckberg,Daniel J. Campbell,Shanta R. Saha,Johnpierre Paglione,Efrain E. Rodriguez###
(1829444, 1829444)
 Grown via hydrothermalde-intercalation of Kx<missing VAR>Fe2-yS2 crystals under basic andreducing conditions, the silver, plate-like crystals of FeS remain stable up to200 circC under air and 250 circC under inert conditions, even thoughthe mineral mackinawite (FeS) is known to be metastable.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(FeS)
###Strong anisotropy in nearly ideal-tetrahedral superconducting FeS single crystals|Christopher K. H. Borg,Xiuquan Zhou,Christopher Eckberg,Daniel J. Campbell,Shanta R. Saha,Johnpierre Paglione,Efrain E. Rodriguez###
(1829464, 1829467)
 Grown via hydrothermalde-intercalation of Kx<missing VAR>Fe2-yS2 crystals under basic andreducing conditions, the silver, plate-like crystals of FeS remain stable up to200 circC under air and 250 circC under inert conditions, even thoughthe mineral mackinawite (FeS) is known to be metastable.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeS
###Strong anisotropy in nearly ideal-tetrahedral superconducting FeS single crystals|Christopher K. H. Borg,Xiuquan Zhou,Christopher Eckberg,Daniel J. Campbell,Shanta R. Saha,Johnpierre Paglione,Efrain E. Rodriguez###
(1829480, 1829481)
 FeS single crystalsexhibit a superconducting state below Tc4 K as determined by electricalresistivity, magnetic susceptibility, and heat capacity measurements,confirming the presence of a bulk superconducting state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Strong anisotropy in nearly ideal-tetrahedral superconducting FeS single crystals|Christopher K. H. Borg,Xiuquan Zhou,Christopher Eckberg,Daniel J. Campbell,Shanta R. Saha,Johnpierre Paglione,Efrain E. Rodriguez###
(1829502, 1829502)
 FeS single crystalsexhibit a superconducting state below Tc4 K as determined by electricalresistivity, magnetic susceptibility, and heat capacity measurements,confirming the presence of a bulk superconducting state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K2
###Strong anisotropy in nearly ideal-tetrahedral superconducting FeS single crystals|Christopher K. H. Borg,Xiuquan Zhou,Christopher Eckberg,Daniel J. Campbell,Shanta R. Saha,Johnpierre Paglione,Efrain E. Rodriguez###
(1829573, 1829574)
 Normal statemeasurements yield an electronic specific heat of 5mJ/mol-K2, andparamagnetic, metallic behavior with a low residual resistivity of250muOmegacdotcm.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Strong anisotropy in nearly ideal-tetrahedral superconducting FeS single crystals|Christopher K. H. Borg,Xiuquan Zhou,Christopher Eckberg,Daniel J. Campbell,Shanta R. Saha,Johnpierre Paglione,Efrain E. Rodriguez###
(1829699, 1829699)
 This is paralleled in the superconducting state,which exhibits the largest known upper critical field Hc<missing VAR>2 anisotropy ofall iron-based superconductors, with Hc<missing VAR>2ab(0) /Hc2c(0)(2.75T)/(0.275T)10.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Strong anisotropy in nearly ideal-tetrahedral superconducting FeS single crystals|Christopher K. H. Borg,Xiuquan Zhou,Christopher Eckberg,Daniel J. Campbell,Shanta R. Saha,Johnpierre Paglione,Efrain E. Rodriguez###
(1829719, 1829719)
 This is paralleled in the superconducting state,which exhibits the largest known upper critical field Hc<missing VAR>2 anisotropy ofall iron-based superconductors, with Hc<missing VAR>2ab(0) /Hc2c(0)(2.75T)/(0.275T)10.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Strong anisotropy in nearly ideal-tetrahedral superconducting FeS single crystals|Christopher K. H. Borg,Xiuquan Zhou,Christopher Eckberg,Daniel J. Campbell,Shanta R. Saha,Johnpierre Paglione,Efrain E. Rodriguez###
(1829730, 1829730)
 This is paralleled in the superconducting state,which exhibits the largest known upper critical field Hc<missing VAR>2 anisotropy ofall iron-based superconductors, with Hc<missing VAR>2ab(0) /Hc2c(0)(2.75T)/(0.275T)10.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeS
###Strong anisotropy in nearly ideal-tetrahedral superconducting FeS single crystals|Christopher K. H. Borg,Xiuquan Zhou,Christopher Eckberg,Daniel J. Campbell,Shanta R. Saha,Johnpierre Paglione,Efrain E. Rodriguez###
(1829780, 1829781)
 Comparisons to theoretical models for2D<missing VAR> and anisotropic-3D<missing VAR> superconductors, however, suggest that FeS is the lattercase with a large effective mass anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeS
###Strong anisotropy in nearly ideal-tetrahedral superconducting FeS single crystals|Christopher K. H. Borg,Xiuquan Zhou,Christopher Eckberg,Daniel J. Campbell,Shanta R. Saha,Johnpierre Paglione,Efrain E. Rodriguez###
(1829809, 1829810)
 We place FeS in context to otherclosely related iron-based superconductors and discuss the role of structuralparameters such as anion height on superconductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Dynamic magnetic susceptibility and electrical detection of ferromagnetic resonance|Yin Zhang,X. S. Wang,H. Y. Yuan,S. S. Kang,H. W. Zhang,X. R. Wang###
(1829908, 1829908)
 The dynamic magnetic susceptibility of magnetic materials near ferromagneticresonance (FMR) is very important in interpreting dc-voltage in electricaldetection of FMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Dynamic magnetic susceptibility and electrical detection of ferromagnetic resonance|Yin Zhang,X. S. Wang,H. Y. Yuan,S. S. Kang,H. W. Zhang,X. R. Wang###
(1829936, 1829936)
 The dynamic magnetic susceptibility of magnetic materials near ferromagneticresonance (FMR) is very important in interpreting dc-voltage in electricaldetection of FMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Dynamic magnetic susceptibility and electrical detection of ferromagnetic resonance|Yin Zhang,X. S. Wang,H. Y. Yuan,S. S. Kang,H. W. Zhang,X. R. Wang###
(1829972, 1829972)
 Based on the causality principle and the assumption that theusual microwave absorption lineshape around FMR is Lorentzian, general forms ofdynamic susceptibility of an arbitrary sample and the corresponding dc-voltagelineshape are obtained.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Dynamic magnetic susceptibility and electrical detection of ferromagnetic resonance|Yin Zhang,X. S. Wang,H. Y. Yuan,S. S. Kang,H. W. Zhang,X. R. Wang###
(1830175, 1830175)
 2) The frequency dependence of dynamicsusceptibility near FMR is fully characterized by six numbers while its fielddependence is fully characterized by seven numbers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Dynamic magnetic susceptibility and electrical detection of ferromagnetic resonance|Yin Zhang,X. S. Wang,H. Y. Yuan,S. S. Kang,H. W. Zhang,X. R. Wang###
(1830415, 1830415)
 In contrast, the frequency-dependence of susceptibilitymatrix at a fixed field has only one peak.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Attractive and repulsive Fermi polarons in two dimensions|Marco Koschorreck,Daniel Pertot,Enrico Vogt,Bernd Fröhlich,Michael Feld,Michael Köhl###
(1830603, 1830603)
 In the solid state, a well-known case is an impuritycoupled to a bosonic bath, for example lattice vibrations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Tc
###Attractive and repulsive Fermi polarons in two dimensions|Marco Koschorreck,Daniel Pertot,Enrico Vogt,Bernd Fröhlich,Michael Feld,Michael Köhl###
(1830705, 1830705)
This quasiparticle plays an important role in the spectral function of high-Tcsuperconductors as well as in colossal-magnetoresistance in manganites.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###Attractive and repulsive Fermi polarons in two dimensions|Marco Koschorreck,Daniel Pertot,Enrico Vogt,Bernd Fröhlich,Michael Feld,Michael Köhl###
(1830881, 1830881)
 The Fermi polaron problem constitutes the extreme, but conceptuallysimple, limit of two important quantum many-body problems the BE<missing VAR>C-BCScrossover with spin-imbalance for attractive interactions and Stoners<missing VAR>itinerant ferromagnetism for repulsive interactions.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Attractive and repulsive Fermi polarons in two dimensions|Marco Koschorreck,Daniel Pertot,Enrico Vogt,Bernd Fröhlich,Michael Feld,Michael Köhl###
(1830883, 1830883)
 The Fermi polaron problem constitutes the extreme, but conceptuallysimple, limit of two important quantum many-body problems the BE<missing VAR>C-BCScrossover with spin-imbalance for attractive interactions and Stoners<missing VAR>itinerant ferromagnetism for repulsive interactions.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BCS
###Attractive and repulsive Fermi polarons in two dimensions|Marco Koschorreck,Daniel Pertot,Enrico Vogt,Bernd Fröhlich,Michael Feld,Michael Köhl###
(1830885, 1830887)
 The Fermi polaron problem constitutes the extreme, but conceptuallysimple, limit of two important quantum many-body problems the BE<missing VAR>C-BCScrossover with spin-imbalance for attractive interactions and Stoners<missing VAR>itinerant ferromagnetism for repulsive interactions.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###On/off switching of bit readout in bias-enhanced tunnel magneto-Seebeck effect|Alexander Boehnke,Marius Milnikel,Marvin Walter,Vladyslav Zbarsky,Christian Franz,Michael Czerner,Karsten Rott,Andy Thomas,Christian Heiliger,Markus Münzenberg,Günter Reiss###
(1831258, 1831258)
 Here, we demonstrate that the tunnel magneto-Seebeckeffect (TMS) in CoFeB/MgO/CoFeB tunnel junctions can be switched on to a logic1 state and off to 0 by simply changing the magnetic state of the CoFeBelectrodes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 0, 'by', 0],[276.0, 1821, 'to', 4],[523.0, -3000, '%', 7]

CoFeB/MgO/CoFeB
###On/off switching of bit readout in bias-enhanced tunnel magneto-Seebeck effect|Alexander Boehnke,Marius Milnikel,Marvin Walter,Vladyslav Zbarsky,Christian Franz,Michael Czerner,Karsten Rott,Andy Thomas,Christian Heiliger,Markus Münzenberg,Günter Reiss###
(1831263, 1831272)
 Here, we demonstrate that the tunnel magneto-Seebeckeffect (TMS) in CoFeB/MgO/CoFeB tunnel junctions can be switched on to a logic1 state and off to 0 by simply changing the magnetic state of the CoFeBelectrodes.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[30.0, 0, 'by', 0],[262.0, 1821, 'to', 4],[509.0, -3000, '%', 7]

CoFeB
###On/off switching of bit readout in bias-enhanced tunnel magneto-Seebeck effect|Alexander Boehnke,Marius Milnikel,Marvin Walter,Vladyslav Zbarsky,Christian Franz,Michael Czerner,Karsten Rott,Andy Thomas,Christian Heiliger,Markus Münzenberg,Günter Reiss###
(1831318, 1831320)
 Here, we demonstrate that the tunnel magneto-Seebeckeffect (TMS) in CoFeB/MgO/CoFeB tunnel junctions can be switched on to a logic1 state and off to 0 by simply changing the magnetic state of the CoFeBelectrodes.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, 0, 'by', 0],[214.0, 1821, 'to', 4],[461.0, -3000, '%', 7]

S
###On/off switching of bit readout in bias-enhanced tunnel magneto-Seebeck effect|Alexander Boehnke,Marius Milnikel,Marvin Walter,Vladyslav Zbarsky,Christian Franz,Michael Czerner,Karsten Rott,Andy Thomas,Christian Heiliger,Markus Münzenberg,Günter Reiss###
(1831636, 1831636)
 Our results showthat the signal crosses zero and can be adjusted by tuning a bias voltage thatis applied between the electrodes of the junction; hence, the name of theeffect is bias-enhanced tunnel magneto-Seebeck effect (bTMS).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[334.0, 0, 'by', 5],[102.0, 1821, 'to', 1],[145.0, -3000, '%', 2]

S
###On/off switching of bit readout in bias-enhanced tunnel magneto-Seebeck effect|Alexander Boehnke,Marius Milnikel,Marvin Walter,Vladyslav Zbarsky,Christian Franz,Michael Czerner,Karsten Rott,Andy Thomas,Christian Heiliger,Markus Münzenberg,Günter Reiss###
(1831672, 1831672)
 Via the spin- andenergy-dependent transmission of electrons in the junction, the bTMS effect canbe configured using the bias voltage with much higher control than the tunnelmagnetoresistance (TMR) and even completely suppressed for only one magneticconfiguration, which is either parallel (P) or anti-parallel (AP).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[370.0, 0, 'by', 6],[138.0, 1821, 'to', 2],[109.0, -3000, '%', 1]

(P)
###On/off switching of bit readout in bias-enhanced tunnel magneto-Seebeck effect|Alexander Boehnke,Marius Milnikel,Marvin Walter,Vladyslav Zbarsky,Christian Franz,Michael Czerner,Karsten Rott,Andy Thomas,Christian Heiliger,Markus Münzenberg,Günter Reiss###
(1831742, 1831744)
 Via the spin- andenergy-dependent transmission of electrons in the junction, the bTMS effect canbe configured using the bias voltage with much higher control than the tunnelmagnetoresistance (TMR) and even completely suppressed for only one magneticconfiguration, which is either parallel (P) or anti-parallel (AP).
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[440.0, 0, 'by', 6],[208.0, 1821, 'to', 2],[37.0, -3000, '%', 1]

P
###On/off switching of bit readout in bias-enhanced tunnel magneto-Seebeck effect|Alexander Boehnke,Marius Milnikel,Marvin Walter,Vladyslav Zbarsky,Christian Franz,Michael Czerner,Karsten Rott,Andy Thomas,Christian Heiliger,Markus Münzenberg,Günter Reiss###
(1831754, 1831754)
 Via the spin- andenergy-dependent transmission of electrons in the junction, the bTMS effect canbe configured using the bias voltage with much higher control than the tunnelmagnetoresistance (TMR) and even completely suppressed for only one magneticconfiguration, which is either parallel (P) or anti-parallel (AP).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[452.0, 0, 'by', 6],[220.0, 1821, 'to', 2],[27.0, -3000, '%', 1]

S
###On/off switching of bit readout in bias-enhanced tunnel magneto-Seebeck effect|Alexander Boehnke,Marius Milnikel,Marvin Walter,Vladyslav Zbarsky,Christian Franz,Michael Czerner,Karsten Rott,Andy Thomas,Christian Heiliger,Markus Münzenberg,Günter Reiss###
(1831876, 1831876)
 Moreover, our measurements are a step towards the experimentalrealization of high TMS ratios, which are predicted for specific Co-Fecompositions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[574.0, 0, 'by', 9],[342.0, 1821, 'to', 5],[95.0, -3000, '%', 2]

Co
###On/off switching of bit readout in bias-enhanced tunnel magneto-Seebeck effect|Alexander Boehnke,Marius Milnikel,Marvin Walter,Vladyslav Zbarsky,Christian Franz,Michael Czerner,Karsten Rott,Andy Thomas,Christian Heiliger,Markus Münzenberg,Günter Reiss###
(1831891, 1831891)
 Moreover, our measurements are a step towards the experimentalrealization of high TMS ratios, which are predicted for specific Co-Fecompositions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[589.0, 0, 'by', 9],[357.0, 1821, 'to', 5],[110.0, -3000, '%', 2]

Fe
###On/off switching of bit readout in bias-enhanced tunnel magneto-Seebeck effect|Alexander Boehnke,Marius Milnikel,Marvin Walter,Vladyslav Zbarsky,Christian Franz,Michael Czerner,Karsten Rott,Andy Thomas,Christian Heiliger,Markus Münzenberg,Günter Reiss###
(1831893, 1831893)
 Moreover, our measurements are a step towards the experimentalrealization of high TMS ratios, which are predicted for specific Co-Fecompositions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[591.0, 0, 'by', 9],[359.0, 1821, 'to', 5],[112.0, -3000, '%', 2]

HgTe/CdHgTe
###Magnetotransport in Double Quantum Well with Inverted Energy Spectrum: HgTe/CdHgTe|M. V. Yakunin,A. V. Suslov,M. R. Popov,E. G. Novik,S. A. Dvoretsky,N. N. Mikhailov###
(1831925, 1831930)
Magnetotransport in Double Quantum Well with Inverted Energy Spectrum HgTe/CdHgTe.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[37.0, 2, 'D', 1],[439.0, 6, 'larger', 6]

W
###Magnetotransport in Double Quantum Well with Inverted Energy Spectrum: HgTe/CdHgTe|M. V. Yakunin,A. V. Suslov,M. R. Popov,E. G. Novik,S. A. Dvoretsky,N. N. Mikhailov###
(1831958, 1831958)
 We present the first experimental study of the double-quantum-well (DQW)system made of 2D layers with inverted energy band spectrum HgTe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 2, 'D', 0],[411.0, 6, 'larger', 5]

HgTe
###Magnetotransport in Double Quantum Well with Inverted Energy Spectrum: HgTe/CdHgTe|M. V. Yakunin,A. V. Suslov,M. R. Popov,E. G. Novik,S. A. Dvoretsky,N. N. Mikhailov###
(1831981, 1831982)
 We present the first experimental study of the double-quantum-well (DQW)system made of 2D layers with inverted energy band spectrum HgTe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[14.0, 2, 'D', 0],[387.0, 6, 'larger', 5]

HgTe
###Magnetotransport in Double Quantum Well with Inverted Energy Spectrum: HgTe/CdHgTe|M. V. Yakunin,A. V. Suslov,M. R. Popov,E. G. Novik,S. A. Dvoretsky,N. N. Mikhailov###
(1832019, 1832020)
 Themagnetotransport reveals a considerably larger overlap of the conduction andvalence subbands than in known HgTe single quantum wells (Q<missing VAR>W), which may beregulated by an applied gate voltage Vg<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 2, 'D', 1],[349.0, 6, 'larger', 4]

W
###Magnetotransport in Double Quantum Well with Inverted Energy Spectrum: HgTe/CdHgTe|M. V. Yakunin,A. V. Suslov,M. R. Popov,E. G. Novik,S. A. Dvoretsky,N. N. Mikhailov###
(1832030, 1832030)
 Themagnetotransport reveals a considerably larger overlap of the conduction andvalence subbands than in known HgTe single quantum wells (Q<missing VAR>W), which may beregulated by an applied gate voltage Vg<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 2, 'D', 1],[339.0, 6, 'larger', 4]

V
###Magnetotransport in Double Quantum Well with Inverted Energy Spectrum: HgTe/CdHgTe|M. V. Yakunin,A. V. Suslov,M. R. Popov,E. G. Novik,S. A. Dvoretsky,N. N. Mikhailov###
(1832053, 1832053)
 Themagnetotransport reveals a considerably larger overlap of the conduction andvalence subbands than in known HgTe single quantum wells (Q<missing VAR>W), which may beregulated by an applied gate voltage Vg<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[86.0, 2, 'D', 1],[316.0, 6, 'larger', 4]

B
###Magnetotransport in Double Quantum Well with Inverted Energy Spectrum: HgTe/CdHgTe|M. V. Yakunin,A. V. Suslov,M. R. Popov,E. G. Novik,S. A. Dvoretsky,N. N. Mikhailov###
(1832080, 1832080)
 This large overlap manifests itselfin a much higher critical field Bc<missing VAR> separating the range above it where thequantum peculiarities shift linearly with Vg<missing VAR> and the range below with acomplicated behavior.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 2, 'D', 2],[289.0, 6, 'larger', 3]

V
###Magnetotransport in Double Quantum Well with Inverted Energy Spectrum: HgTe/CdHgTe|M. V. Yakunin,A. V. Suslov,M. R. Popov,E. G. Novik,S. A. Dvoretsky,N. N. Mikhailov###
(1832108, 1832108)
 This large overlap manifests itselfin a much higher critical field Bc<missing VAR> separating the range above it where thequantum peculiarities shift linearly with Vg<missing VAR> and the range below with acomplicated behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 2, 'D', 2],[261.0, 6, 'larger', 3]

In
###Magnetotransport in Double Quantum Well with Inverted Energy Spectrum: HgTe/CdHgTe|M. V. Yakunin,A. V. Suslov,M. R. Popov,E. G. Novik,S. A. Dvoretsky,N. N. Mikhailov###
(1832129, 1832129)
 In the latter case the N-shaped and double-N-shapedstructures in the Hall magnetoresistance rhoxy(B) are observed with theirscale in field pronouncedly enlarged as compared to the pictures observed in ananalogous single Q<missing VAR>W.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 2, 'D', 3],[240.0, 6, 'larger', 2]

N
###Magnetotransport in Double Quantum Well with Inverted Energy Spectrum: HgTe/CdHgTe|M. V. Yakunin,A. V. Suslov,M. R. Popov,E. G. Novik,S. A. Dvoretsky,N. N. Mikhailov###
(1832139, 1832139)
 In the latter case the N-shaped and double-N-shapedstructures in the Hall magnetoresistance rhoxy(B) are observed with theirscale in field pronouncedly enlarged as compared to the pictures observed in ananalogous single Q<missing VAR>W.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[172.0, 2, 'D', 3],[230.0, 6, 'larger', 2]

N
###Magnetotransport in Double Quantum Well with Inverted Energy Spectrum: HgTe/CdHgTe|M. V. Yakunin,A. V. Suslov,M. R. Popov,E. G. Novik,S. A. Dvoretsky,N. N. Mikhailov###
(1832147, 1832147)
 In the latter case the N-shaped and double-N-shapedstructures in the Hall magnetoresistance rhoxy(B) are observed with theirscale in field pronouncedly enlarged as compared to the pictures observed in ananalogous single Q<missing VAR>W.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[180.0, 2, 'D', 3],[222.0, 6, 'larger', 2]

(B)
###Magnetotransport in Double Quantum Well with Inverted Energy Spectrum: HgTe/CdHgTe|M. V. Yakunin,A. V. Suslov,M. R. Popov,E. G. Novik,S. A. Dvoretsky,N. N. Mikhailov###
(1832164, 1832166)
 In the latter case the N-shaped and double-N-shapedstructures in the Hall magnetoresistance rhoxy(B) are observed with theirscale in field pronouncedly enlarged as compared to the pictures observed in ananalogous single Q<missing VAR>W.
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[197.0, 2, 'D', 3],[203.0, 6, 'larger', 2]

W
###Magnetotransport in Double Quantum Well with Inverted Energy Spectrum: HgTe/CdHgTe|M. V. Yakunin,A. V. Suslov,M. R. Popov,E. G. Novik,S. A. Dvoretsky,N. N. Mikhailov###
(1832209, 1832209)
 In the latter case the N-shaped and double-N-shapedstructures in the Hall magnetoresistance rhoxy(B) are observed with theirscale in field pronouncedly enlarged as compared to the pictures observed in ananalogous single Q<missing VAR>W.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[242.0, 2, 'D', 3],[160.0, 6, 'larger', 2]

V
###Magnetotransport in Double Quantum Well with Inverted Energy Spectrum: HgTe/CdHgTe|M. V. Yakunin,A. V. Suslov,M. R. Popov,E. G. Novik,S. A. Dvoretsky,N. N. Mikhailov###
(1832245, 1832245)
 The coexisting electrons and holes were found in the wholeinvestigated range of positive and negative Vg<missing VAR> as revealed from fits to thelow-field N-shaped rhoxy(B) and from the Fourier analysis ofoscillations in rhoxx(B).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[278.0, 2, 'D', 4],[124.0, 6, 'larger', 1]

N
###Magnetotransport in Double Quantum Well with Inverted Energy Spectrum: HgTe/CdHgTe|M. V. Yakunin,A. V. Suslov,M. R. Popov,E. G. Novik,S. A. Dvoretsky,N. N. Mikhailov###
(1832265, 1832265)
 The coexisting electrons and holes were found in the wholeinvestigated range of positive and negative Vg<missing VAR> as revealed from fits to thelow-field N-shaped rhoxy(B) and from the Fourier analysis ofoscillations in rhoxx(B).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[298.0, 2, 'D', 4],[104.0, 6, 'larger', 1]

(B)
###Magnetotransport in Double Quantum Well with Inverted Energy Spectrum: HgTe/CdHgTe|M. V. Yakunin,A. V. Suslov,M. R. Popov,E. G. Novik,S. A. Dvoretsky,N. N. Mikhailov###
(1832271, 1832273)
 The coexisting electrons and holes were found in the wholeinvestigated range of positive and negative Vg<missing VAR> as revealed from fits to thelow-field N-shaped rhoxy(B) and from the Fourier analysis ofoscillations in rhoxx(B).
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[304.0, 2, 'D', 4],[96.0, 6, 'larger', 1]

(B)
###Magnetotransport in Double Quantum Well with Inverted Energy Spectrum: HgTe/CdHgTe|M. V. Yakunin,A. V. Suslov,M. R. Popov,E. G. Novik,S. A. Dvoretsky,N. N. Mikhailov###
(1832294, 1832296)
 The coexisting electrons and holes were found in the wholeinvestigated range of positive and negative Vg<missing VAR> as revealed from fits to thelow-field N-shaped rhoxy(B) and from the Fourier analysis ofoscillations in rhoxx(B).
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[327.0, 2, 'D', 4],[73.0, 6, 'larger', 1]

V
###Magnetotransport in Double Quantum Well with Inverted Energy Spectrum: HgTe/CdHgTe|M. V. Yakunin,A. V. Suslov,M. R. Popov,E. G. Novik,S. A. Dvoretsky,N. N. Mikhailov###
(1832341, 1832341)
 A peculiar feature here is that the foundelectron density n<missing VAR> remains almost constant in the whole range of investigatedVg<missing VAR> while the hole density p<missing VAR> drops down from the value a factor of 6 largerthan n<missing VAR> at extreme negative Vg<missing VAR> to almost zero at extreme positive Vg<missing VAR>passing through the charge neutrality point.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[374.0, 2, 'D', 5],[28.0, 6, 'larger', 0]

V
###Magnetotransport in Double Quantum Well with Inverted Energy Spectrum: HgTe/CdHgTe|M. V. Yakunin,A. V. Suslov,M. R. Popov,E. G. Novik,S. A. Dvoretsky,N. N. Mikhailov###
(1832382, 1832382)
 A peculiar feature here is that the foundelectron density n<missing VAR> remains almost constant in the whole range of investigatedVg<missing VAR> while the hole density p<missing VAR> drops down from the value a factor of 6 largerthan n<missing VAR> at extreme negative Vg<missing VAR> to almost zero at extreme positive Vg<missing VAR>passing through the charge neutrality point.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[415.0, 2, 'D', 5],[13.0, 6, 'larger', 0]

V
###Magnetotransport in Double Quantum Well with Inverted Energy Spectrum: HgTe/CdHgTe|M. V. Yakunin,A. V. Suslov,M. R. Popov,E. G. Novik,S. A. Dvoretsky,N. N. Mikhailov###
(1832397, 1832397)
 A peculiar feature here is that the foundelectron density n<missing VAR> remains almost constant in the whole range of investigatedVg<missing VAR> while the hole density p<missing VAR> drops down from the value a factor of 6 largerthan n<missing VAR> at extreme negative Vg<missing VAR> to almost zero at extreme positive Vg<missing VAR>passing through the charge neutrality point.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[430.0, 2, 'D', 5],[28.0, 6, 'larger', 0]

(B)
###Magnetotransport in Double Quantum Well with Inverted Energy Spectrum: HgTe/CdHgTe|M. V. Yakunin,A. V. Suslov,M. R. Popov,E. G. Novik,S. A. Dvoretsky,N. N. Mikhailov###
(1832505, 1832507)
 We interpret the observed reentrant sign-alternatingrhoxy(B) between electronic and hole conductivities and its zeroresistivity state in the quantum Hall range of fields on the basis of acalculated picture of magnetic levels in a DQW.
Featurization successful!
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[538.0, 2, 'D', 7],[136.0, 6, 'larger', 2]

W
###Magnetotransport in Double Quantum Well with Inverted Energy Spectrum: HgTe/CdHgTe|M. V. Yakunin,A. V. Suslov,M. R. Popov,E. G. Novik,S. A. Dvoretsky,N. N. Mikhailov###
(1832571, 1832571)
 We interpret the observed reentrant sign-alternatingrhoxy(B) between electronic and hole conductivities and its zeroresistivity state in the quantum Hall range of fields on the basis of acalculated picture of magnetic levels in a DQW.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[604.0, 2, 'D', 7],[202.0, 6, 'larger', 2]

II
###Spectroscopic Evidence of Type II Weyl Semimetal State in WTe2|Chenlu Wang,Yan Zhang,Jianwei Huang,Simin Nie,Guodong Liu,Aiji Liang,Yuxiao Zhang,Bing Shen,Jing Liu,Cheng Hu,Ying Ding,Defa Liu,Yong Hu,Shaolong He,Lin Zhao,Li Yu,Jin Hu,Jiang Wei,Zhiqiang Mao,Youguo Shi,Xiaowen Jia,Fengfeng Zhang,Shenjin Zhang,Feng Yang,Zhimin Wang,Qinjun Peng,Hongming Weng,Xi Dai,Zhong Fang,Zuyan Xu,Chuangtian Chen,X. J. Zhou###
(1832590, 1832591)
Spectroscopic Evidence of Type II Weyl Semimetal State in WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Spectroscopic Evidence of Type II Weyl Semimetal State in WTe2|Chenlu Wang,Yan Zhang,Jianwei Huang,Simin Nie,Guodong Liu,Aiji Liang,Yuxiao Zhang,Bing Shen,Jing Liu,Cheng Hu,Ying Ding,Defa Liu,Yong Hu,Shaolong He,Lin Zhao,Li Yu,Jin Hu,Jiang Wei,Zhiqiang Mao,Youguo Shi,Xiaowen Jia,Fengfeng Zhang,Shenjin Zhang,Feng Yang,Zhimin Wang,Qinjun Peng,Hongming Weng,Xi Dai,Zhong Fang,Zuyan Xu,Chuangtian Chen,X. J. Zhou###
(1832601, 1832603)
Spectroscopic Evidence of Type II Weyl Semimetal State in WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spectroscopic Evidence of Type II Weyl Semimetal State in WTe2|Chenlu Wang,Yan Zhang,Jianwei Huang,Simin Nie,Guodong Liu,Aiji Liang,Yuxiao Zhang,Bing Shen,Jing Liu,Cheng Hu,Ying Ding,Defa Liu,Yong Hu,Shaolong He,Lin Zhao,Li Yu,Jin Hu,Jiang Wei,Zhiqiang Mao,Youguo Shi,Xiaowen Jia,Fengfeng Zhang,Shenjin Zhang,Feng Yang,Zhimin Wang,Qinjun Peng,Hongming Weng,Xi Dai,Zhong Fang,Zuyan Xu,Chuangtian Chen,X. J. Zhou###
(1832707, 1832707)
 In the type I Weylsemimetals, a topologically protected linear crossing of two bands, i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I
###Spectroscopic Evidence of Type II Weyl Semimetal State in WTe2|Chenlu Wang,Yan Zhang,Jianwei Huang,Simin Nie,Guodong Liu,Aiji Liang,Yuxiao Zhang,Bing Shen,Jing Liu,Cheng Hu,Ying Ding,Defa Liu,Yong Hu,Shaolong He,Lin Zhao,Li Yu,Jin Hu,Jiang Wei,Zhiqiang Mao,Youguo Shi,Xiaowen Jia,Fengfeng Zhang,Shenjin Zhang,Feng Yang,Zhimin Wang,Qinjun Peng,Hongming Weng,Xi Dai,Zhong Fang,Zuyan Xu,Chuangtian Chen,X. J. Zhou###
(1832713, 1832713)
 In the type I Weylsemimetals, a topologically protected linear crossing of two bands, i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spectroscopic Evidence of Type II Weyl Semimetal State in WTe2|Chenlu Wang,Yan Zhang,Jianwei Huang,Simin Nie,Guodong Liu,Aiji Liang,Yuxiao Zhang,Bing Shen,Jing Liu,Cheng Hu,Ying Ding,Defa Liu,Yong Hu,Shaolong He,Lin Zhao,Li Yu,Jin Hu,Jiang Wei,Zhiqiang Mao,Youguo Shi,Xiaowen Jia,Fengfeng Zhang,Shenjin Zhang,Feng Yang,Zhimin Wang,Qinjun Peng,Hongming Weng,Xi Dai,Zhong Fang,Zuyan Xu,Chuangtian Chen,X. J. Zhou###
(1832778, 1832778)
In the type II Weyl semimetals, the Weyl point emerges from a contact of anelectron and a hole pocket at the boundary resulting in a highly tilted Weylcone.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Spectroscopic Evidence of Type II Weyl Semimetal State in WTe2|Chenlu Wang,Yan Zhang,Jianwei Huang,Simin Nie,Guodong Liu,Aiji Liang,Yuxiao Zhang,Bing Shen,Jing Liu,Cheng Hu,Ying Ding,Defa Liu,Yong Hu,Shaolong He,Lin Zhao,Li Yu,Jin Hu,Jiang Wei,Zhiqiang Mao,Youguo Shi,Xiaowen Jia,Fengfeng Zhang,Shenjin Zhang,Feng Yang,Zhimin Wang,Qinjun Peng,Hongming Weng,Xi Dai,Zhong Fang,Zuyan Xu,Chuangtian Chen,X. J. Zhou###
(1832784, 1832785)
In the type II Weyl semimetals, the Weyl point emerges from a contact of anelectron and a hole pocket at the boundary resulting in a highly tilted Weylcone.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spectroscopic Evidence of Type II Weyl Semimetal State in WTe2|Chenlu Wang,Yan Zhang,Jianwei Huang,Simin Nie,Guodong Liu,Aiji Liang,Yuxiao Zhang,Bing Shen,Jing Liu,Cheng Hu,Ying Ding,Defa Liu,Yong Hu,Shaolong He,Lin Zhao,Li Yu,Jin Hu,Jiang Wei,Zhiqiang Mao,Youguo Shi,Xiaowen Jia,Fengfeng Zhang,Shenjin Zhang,Feng Yang,Zhimin Wang,Qinjun Peng,Hongming Weng,Xi Dai,Zhong Fang,Zuyan Xu,Chuangtian Chen,X. J. Zhou###
(1832843, 1832843)
 In type II Weyl semimetals, the Lorentz invariance is violated and afundamentally new kind of Weyl Fermions is produced that leads to new physicalproperties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Spectroscopic Evidence of Type II Weyl Semimetal State in WTe2|Chenlu Wang,Yan Zhang,Jianwei Huang,Simin Nie,Guodong Liu,Aiji Liang,Yuxiao Zhang,Bing Shen,Jing Liu,Cheng Hu,Ying Ding,Defa Liu,Yong Hu,Shaolong He,Lin Zhao,Li Yu,Jin Hu,Jiang Wei,Zhiqiang Mao,Youguo Shi,Xiaowen Jia,Fengfeng Zhang,Shenjin Zhang,Feng Yang,Zhimin Wang,Qinjun Peng,Hongming Weng,Xi Dai,Zhong Fang,Zuyan Xu,Chuangtian Chen,X. J. Zhou###
(1832847, 1832848)
 In type II Weyl semimetals, the Lorentz invariance is violated and afundamentally new kind of Weyl Fermions is produced that leads to new physicalproperties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Spectroscopic Evidence of Type II Weyl Semimetal State in WTe2|Chenlu Wang,Yan Zhang,Jianwei Huang,Simin Nie,Guodong Liu,Aiji Liang,Yuxiao Zhang,Bing Shen,Jing Liu,Cheng Hu,Ying Ding,Defa Liu,Yong Hu,Shaolong He,Lin Zhao,Li Yu,Jin Hu,Jiang Wei,Zhiqiang Mao,Youguo Shi,Xiaowen Jia,Fengfeng Zhang,Shenjin Zhang,Feng Yang,Zhimin Wang,Qinjun Peng,Hongming Weng,Xi Dai,Zhong Fang,Zuyan Xu,Chuangtian Chen,X. J. Zhou###
(1832900, 1832902)
 WTe2 is interesting because it exhibits anomalously largemagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Spectroscopic Evidence of Type II Weyl Semimetal State in WTe2|Chenlu Wang,Yan Zhang,Jianwei Huang,Simin Nie,Guodong Liu,Aiji Liang,Yuxiao Zhang,Bing Shen,Jing Liu,Cheng Hu,Ying Ding,Defa Liu,Yong Hu,Shaolong He,Lin Zhao,Li Yu,Jin Hu,Jiang Wei,Zhiqiang Mao,Youguo Shi,Xiaowen Jia,Fengfeng Zhang,Shenjin Zhang,Feng Yang,Zhimin Wang,Qinjun Peng,Hongming Weng,Xi Dai,Zhong Fang,Zuyan Xu,Chuangtian Chen,X. J. Zhou###
(1832959, 1832960)
 It has ignited a new excitement because it is proposed to bethe first candidate of realizing type II Weyl Fermions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spectroscopic Evidence of Type II Weyl Semimetal State in WTe2|Chenlu Wang,Yan Zhang,Jianwei Huang,Simin Nie,Guodong Liu,Aiji Liang,Yuxiao Zhang,Bing Shen,Jing Liu,Cheng Hu,Ying Ding,Defa Liu,Yong Hu,Shaolong He,Lin Zhao,Li Yu,Jin Hu,Jiang Wei,Zhiqiang Mao,Youguo Shi,Xiaowen Jia,Fengfeng Zhang,Shenjin Zhang,Feng Yang,Zhimin Wang,Qinjun Peng,Hongming Weng,Xi Dai,Zhong Fang,Zuyan Xu,Chuangtian Chen,X. J. Zhou###
(1832987, 1832987)
 Here we report ourangle-resolved photoemission (ARPES) evidence on identifying the type II WeylFermion state in WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Spectroscopic Evidence of Type II Weyl Semimetal State in WTe2|Chenlu Wang,Yan Zhang,Jianwei Huang,Simin Nie,Guodong Liu,Aiji Liang,Yuxiao Zhang,Bing Shen,Jing Liu,Cheng Hu,Ying Ding,Defa Liu,Yong Hu,Shaolong He,Lin Zhao,Li Yu,Jin Hu,Jiang Wei,Zhiqiang Mao,Youguo Shi,Xiaowen Jia,Fengfeng Zhang,Shenjin Zhang,Feng Yang,Zhimin Wang,Qinjun Peng,Hongming Weng,Xi Dai,Zhong Fang,Zuyan Xu,Chuangtian Chen,X. J. Zhou###
(1833000, 1833001)
 Here we report ourangle-resolved photoemission (ARPES) evidence on identifying the type II WeylFermion state in WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Spectroscopic Evidence of Type II Weyl Semimetal State in WTe2|Chenlu Wang,Yan Zhang,Jianwei Huang,Simin Nie,Guodong Liu,Aiji Liang,Yuxiao Zhang,Bing Shen,Jing Liu,Cheng Hu,Ying Ding,Defa Liu,Yong Hu,Shaolong He,Lin Zhao,Li Yu,Jin Hu,Jiang Wei,Zhiqiang Mao,Youguo Shi,Xiaowen Jia,Fengfeng Zhang,Shenjin Zhang,Feng Yang,Zhimin Wang,Qinjun Peng,Hongming Weng,Xi Dai,Zhong Fang,Zuyan Xu,Chuangtian Chen,X. J. Zhou###
(1833012, 1833014)
 Here we report ourangle-resolved photoemission (ARPES) evidence on identifying the type II WeylFermion state in WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Spectroscopic Evidence of Type II Weyl Semimetal State in WTe2|Chenlu Wang,Yan Zhang,Jianwei Huang,Simin Nie,Guodong Liu,Aiji Liang,Yuxiao Zhang,Bing Shen,Jing Liu,Cheng Hu,Ying Ding,Defa Liu,Yong Hu,Shaolong He,Lin Zhao,Li Yu,Jin Hu,Jiang Wei,Zhiqiang Mao,Youguo Shi,Xiaowen Jia,Fengfeng Zhang,Shenjin Zhang,Feng Yang,Zhimin Wang,Qinjun Peng,Hongming Weng,Xi Dai,Zhong Fang,Zuyan Xu,Chuangtian Chen,X. J. Zhou###
(1833035, 1833035)
 By utilizing our latest generation laser-based ARPESsystem with superior energy and momentum resolutions, we have revealed a fullpicture on the electronic structure of WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Spectroscopic Evidence of Type II Weyl Semimetal State in WTe2|Chenlu Wang,Yan Zhang,Jianwei Huang,Simin Nie,Guodong Liu,Aiji Liang,Yuxiao Zhang,Bing Shen,Jing Liu,Cheng Hu,Ying Ding,Defa Liu,Yong Hu,Shaolong He,Lin Zhao,Li Yu,Jin Hu,Jiang Wei,Zhiqiang Mao,Youguo Shi,Xiaowen Jia,Fengfeng Zhang,Shenjin Zhang,Feng Yang,Zhimin Wang,Qinjun Peng,Hongming Weng,Xi Dai,Zhong Fang,Zuyan Xu,Chuangtian Chen,X. J. Zhou###
(1833076, 1833078)
 By utilizing our latest generation laser-based ARPESsystem with superior energy and momentum resolutions, we have revealed a fullpicture on the electronic structure of WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Spectroscopic Evidence of Type II Weyl Semimetal State in WTe2|Chenlu Wang,Yan Zhang,Jianwei Huang,Simin Nie,Guodong Liu,Aiji Liang,Yuxiao Zhang,Bing Shen,Jing Liu,Cheng Hu,Ying Ding,Defa Liu,Yong Hu,Shaolong He,Lin Zhao,Li Yu,Jin Hu,Jiang Wei,Zhiqiang Mao,Youguo Shi,Xiaowen Jia,Fengfeng Zhang,Shenjin Zhang,Feng Yang,Zhimin Wang,Qinjun Peng,Hongming Weng,Xi Dai,Zhong Fang,Zuyan Xu,Chuangtian Chen,X. J. Zhou###
(1833148, 1833149)
 Clear surface state has beenidentified and its connection with the bulk electronic states in the momentumand energy space shows a good agreement with the calculated band structureswith the type II Weyl states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Spectroscopic Evidence of Type II Weyl Semimetal State in WTe2|Chenlu Wang,Yan Zhang,Jianwei Huang,Simin Nie,Guodong Liu,Aiji Liang,Yuxiao Zhang,Bing Shen,Jing Liu,Cheng Hu,Ying Ding,Defa Liu,Yong Hu,Shaolong He,Lin Zhao,Li Yu,Jin Hu,Jiang Wei,Zhiqiang Mao,Youguo Shi,Xiaowen Jia,Fengfeng Zhang,Shenjin Zhang,Feng Yang,Zhimin Wang,Qinjun Peng,Hongming Weng,Xi Dai,Zhong Fang,Zuyan Xu,Chuangtian Chen,X. J. Zhou###
(1833177, 1833178)
 Our results provide spectroscopic evidence on theobservation of type II Weyl states in WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WTe2
###Spectroscopic Evidence of Type II Weyl Semimetal State in WTe2|Chenlu Wang,Yan Zhang,Jianwei Huang,Simin Nie,Guodong Liu,Aiji Liang,Yuxiao Zhang,Bing Shen,Jing Liu,Cheng Hu,Ying Ding,Defa Liu,Yong Hu,Shaolong He,Lin Zhao,Li Yu,Jin Hu,Jiang Wei,Zhiqiang Mao,Youguo Shi,Xiaowen Jia,Fengfeng Zhang,Shenjin Zhang,Feng Yang,Zhimin Wang,Qinjun Peng,Hongming Weng,Xi Dai,Zhong Fang,Zuyan Xu,Chuangtian Chen,X. J. Zhou###
(1833186, 1833188)
 Our results provide spectroscopic evidence on theobservation of type II Weyl states in WTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Spectroscopic Evidence of Type II Weyl Semimetal State in WTe2|Chenlu Wang,Yan Zhang,Jianwei Huang,Simin Nie,Guodong Liu,Aiji Liang,Yuxiao Zhang,Bing Shen,Jing Liu,Cheng Hu,Ying Ding,Defa Liu,Yong Hu,Shaolong He,Lin Zhao,Li Yu,Jin Hu,Jiang Wei,Zhiqiang Mao,Youguo Shi,Xiaowen Jia,Fengfeng Zhang,Shenjin Zhang,Feng Yang,Zhimin Wang,Qinjun Peng,Hongming Weng,Xi Dai,Zhong Fang,Zuyan Xu,Chuangtian Chen,X. J. Zhou###
(1833226, 1833227)
 It has laid a foundation forfurther exploration of novel phenomena and physical properties in the type IIWeyl semimetals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WS
###On the search for the chiral anomaly in Weyl semimetals: The negative longitudinal magnetoresistance|R. D. dos Reis,M. O. Ajeesh,N. Kumar,F. Arnold,C. Shekhar,M. Naumann,M. Schmidt,M. Nicklas,E. Hassinger###
(1833342, 1833343)
Thesematerials are now commonly dubbed Weyl semi-metals (WSM).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###On the search for the chiral anomaly in Weyl semimetals: The negative longitudinal magnetoresistance|R. D. dos Reis,M. O. Ajeesh,N. Kumar,F. Arnold,C. Shekhar,M. Naumann,M. Schmidt,M. Nicklas,E. Hassinger###
(1833403, 1833403)
 In WSM<missing VAR>, itis expected to induce a negative longitudinal magnetoresistance (NMR), thechiral magnetic effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WS
###On the search for the chiral anomaly in Weyl semimetals: The negative longitudinal magnetoresistance|R. D. dos Reis,M. O. Ajeesh,N. Kumar,F. Arnold,C. Shekhar,M. Naumann,M. Schmidt,M. Nicklas,E. Hassinger###
(1833405, 1833406)
 In WSM<missing VAR>, itis expected to induce a negative longitudinal magnetoresistance (NMR), thechiral magnetic effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###On the search for the chiral anomaly in Weyl semimetals: The negative longitudinal magnetoresistance|R. D. dos Reis,M. O. Ajeesh,N. Kumar,F. Arnold,C. Shekhar,M. Naumann,M. Schmidt,M. Nicklas,E. Hassinger###
(1833430, 1833430)
 In WSM<missing VAR>, itis expected to induce a negative longitudinal magnetoresistance (NMR), thechiral magnetic effect.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###On the search for the chiral anomaly in Weyl semimetals: The negative longitudinal magnetoresistance|R. D. dos Reis,M. O. Ajeesh,N. Kumar,F. Arnold,C. Shekhar,M. Naumann,M. Schmidt,M. Nicklas,E. Hassinger###
(1833509, 1833509)
 This effect also leads to a strong apparent NMR, but it ischaracterized by a highly non-uniform current distribution inside the sample.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###On the search for the chiral anomaly in Weyl semimetals: The negative longitudinal magnetoresistance|R. D. dos Reis,M. O. Ajeesh,N. Kumar,F. Arnold,C. Shekhar,M. Naumann,M. Schmidt,M. Nicklas,E. Hassinger###
(1833600, 1833600)
In case of a non-homogeneous current injection, thepotential distribution is strongly distorted in the sample.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###On the search for the chiral anomaly in Weyl semimetals: The negative longitudinal magnetoresistance|R. D. dos Reis,M. O. Ajeesh,N. Kumar,F. Arnold,C. Shekhar,M. Naumann,M. Schmidt,M. Nicklas,E. Hassinger###
(1833636, 1833636)
As a consequence, anexperimentally measured potential difference is not proportional to theintrinsic resistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

WS
###On the search for the chiral anomaly in Weyl semimetals: The negative longitudinal magnetoresistance|R. D. dos Reis,M. O. Ajeesh,N. Kumar,F. Arnold,C. Shekhar,M. Naumann,M. Schmidt,M. Nicklas,E. Hassinger###
(1833684, 1833685)
Our results on the MR of the WSM<missing VAR> candidate materials NbP,NbAs, TaAs, TaP exhibit distinct signatures of an inhomogeneous currentdistribution, such as a field-induced zero resistance and a strong dependenceof the measured resistance on the position, shape, and type of the voltageand current contacts on the sample.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbP
###On the search for the chiral anomaly in Weyl semimetals: The negative longitudinal magnetoresistance|R. D. dos Reis,M. O. Ajeesh,N. Kumar,F. Arnold,C. Shekhar,M. Naumann,M. Schmidt,M. Nicklas,E. Hassinger###
(1833692, 1833693)
Our results on the MR of the WSM<missing VAR> candidate materials NbP,NbAs, TaAs, TaP exhibit distinct signatures of an inhomogeneous currentdistribution, such as a field-induced zero resistance and a strong dependenceof the measured resistance on the position, shape, and type of the voltageand current contacts on the sample.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NbAs
###On the search for the chiral anomaly in Weyl semimetals: The negative longitudinal magnetoresistance|R. D. dos Reis,M. O. Ajeesh,N. Kumar,F. Arnold,C. Shekhar,M. Naumann,M. Schmidt,M. Nicklas,E. Hassinger###
(1833697, 1833698)
Our results on the MR of the WSM<missing VAR> candidate materials NbP,NbAs, TaAs, TaP exhibit distinct signatures of an inhomogeneous currentdistribution, such as a field-induced zero resistance and a strong dependenceof the measured resistance on the position, shape, and type of the voltageand current contacts on the sample.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TaAs
###On the search for the chiral anomaly in Weyl semimetals: The negative longitudinal magnetoresistance|R. D. dos Reis,M. O. Ajeesh,N. Kumar,F. Arnold,C. Shekhar,M. Naumann,M. Schmidt,M. Nicklas,E. Hassinger###
(1833701, 1833702)
Our results on the MR of the WSM<missing VAR> candidate materials NbP,NbAs, TaAs, TaP exhibit distinct signatures of an inhomogeneous currentdistribution, such as a field-induced zero resistance and a strong dependenceof the measured resistance on the position, shape, and type of the voltageand current contacts on the sample.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

TaP
###On the search for the chiral anomaly in Weyl semimetals: The negative longitudinal magnetoresistance|R. D. dos Reis,M. O. Ajeesh,N. Kumar,F. Arnold,C. Shekhar,M. Naumann,M. Schmidt,M. Nicklas,E. Hassinger###
(1833705, 1833706)
Our results on the MR of the WSM<missing VAR> candidate materials NbP,NbAs, TaAs, TaP exhibit distinct signatures of an inhomogeneous currentdistribution, such as a field-induced zero resistance and a strong dependenceof the measured resistance on the position, shape, and type of the voltageand current contacts on the sample.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###On the search for the chiral anomaly in Weyl semimetals: The negative longitudinal magnetoresistance|R. D. dos Reis,M. O. Ajeesh,N. Kumar,F. Arnold,C. Shekhar,M. Naumann,M. Schmidt,M. Nicklas,E. Hassinger###
(1833904, 1833904)
 Our study demonstrates that great care must be takenbefore interpreting measurements of a NMR as evidence for the chiral anomaly inputative Weyl semimetals.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

I/F
###Proximity band structure and spin textures on both sides of topological-insulator/ferromagnetic-metal interface and their transport probes|J. M. Marmolejo-Tejada,K. Dolui,P. Lazic,P. -H. Chang,S. Smidstrup,D. Stradi,K. Stokbro,B. K. Nikolic###
(1834004, 1834006)
 The control of recently observed spintronic effects intopological-insulator/ferromagnetic-metal (T<missing VAR>I/FM) heterostructures is thwartedby the lack of understanding of band structure and spin texture around theirinterfaces.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[388.0, 12, ',', 8]

Bi2Se3
###Proximity band structure and spin textures on both sides of topological-insulator/ferromagnetic-metal interface and their transport probes|J. M. Marmolejo-Tejada,K. Dolui,P. Lazic,P. -H. Chang,S. Smidstrup,D. Stradi,K. Stokbro,B. K. Nikolic###
(1834094, 1834097)
 Here we combine density functional theory with Greens<missing VAR> functiontechniques to obtain the spectral function at any plane passing through atomsof Bi2Se3 and Co or Cu layers comprising the interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[297.0, 12, ',', 7]

Co
###Proximity band structure and spin textures on both sides of topological-insulator/ferromagnetic-metal interface and their transport probes|J. M. Marmolejo-Tejada,K. Dolui,P. Lazic,P. -H. Chang,S. Smidstrup,D. Stradi,K. Stokbro,B. K. Nikolic###
(1834101, 1834101)
 Here we combine density functional theory with Greens<missing VAR> functiontechniques to obtain the spectral function at any plane passing through atomsof Bi2Se3 and Co or Cu layers comprising the interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[293.0, 12, ',', 7]

Cu
###Proximity band structure and spin textures on both sides of topological-insulator/ferromagnetic-metal interface and their transport probes|J. M. Marmolejo-Tejada,K. Dolui,P. Lazic,P. -H. Chang,S. Smidstrup,D. Stradi,K. Stokbro,B. K. Nikolic###
(1834105, 1834105)
 Here we combine density functional theory with Greens<missing VAR> functiontechniques to obtain the spectral function at any plane passing through atomsof Bi2Se3 and Co or Cu layers comprising the interface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[289.0, 12, ',', 7]

In
###Proximity band structure and spin textures on both sides of topological-insulator/ferromagnetic-metal interface and their transport probes|J. M. Marmolejo-Tejada,K. Dolui,P. Lazic,P. -H. Chang,S. Smidstrup,D. Stradi,K. Stokbro,B. K. Nikolic###
(1834116, 1834116)
 In contrast towidely assumed but thinly tested Dirac cone gapped by the proximity exchangefield, we find that the Rashba ferromagnetic model describes the spectralfunction on the surface of Bi2Se3 in contact with Co near the Fermi levelE<missing VAR>F0, where circular and snowflake-like constant energy contours coexistaround which spin locks to momentum.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[278.0, 12, ',', 6]

Bi2Se3
###Proximity band structure and spin textures on both sides of topological-insulator/ferromagnetic-metal interface and their transport probes|J. M. Marmolejo-Tejada,K. Dolui,P. Lazic,P. -H. Chang,S. Smidstrup,D. Stradi,K. Stokbro,B. K. Nikolic###
(1834182, 1834185)
 In contrast towidely assumed but thinly tested Dirac cone gapped by the proximity exchangefield, we find that the Rashba ferromagnetic model describes the spectralfunction on the surface of Bi2Se3 in contact with Co near the Fermi levelE<missing VAR>F0, where circular and snowflake-like constant energy contours coexistaround which spin locks to momentum.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[209.0, 12, ',', 6]

Co
###Proximity band structure and spin textures on both sides of topological-insulator/ferromagnetic-metal interface and their transport probes|J. M. Marmolejo-Tejada,K. Dolui,P. Lazic,P. -H. Chang,S. Smidstrup,D. Stradi,K. Stokbro,B. K. Nikolic###
(1834193, 1834193)
 In contrast towidely assumed but thinly tested Dirac cone gapped by the proximity exchangefield, we find that the Rashba ferromagnetic model describes the spectralfunction on the surface of Bi2Se3 in contact with Co near the Fermi levelE<missing VAR>F0, where circular and snowflake-like constant energy contours coexistaround which spin locks to momentum.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[201.0, 12, ',', 6]

F0
###Proximity band structure and spin textures on both sides of topological-insulator/ferromagnetic-metal interface and their transport probes|J. M. Marmolejo-Tejada,K. Dolui,P. Lazic,P. -H. Chang,S. Smidstrup,D. Stradi,K. Stokbro,B. K. Nikolic###
(1834205, 1834206)
 In contrast towidely assumed but thinly tested Dirac cone gapped by the proximity exchangefield, we find that the Rashba ferromagnetic model describes the spectralfunction on the surface of Bi2Se3 in contact with Co near the Fermi levelE<missing VAR>F0, where circular and snowflake-like constant energy contours coexistaround which spin locks to momentum.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 12, ',', 6]

Co
###Proximity band structure and spin textures on both sides of topological-insulator/ferromagnetic-metal interface and their transport probes|J. M. Marmolejo-Tejada,K. Dolui,P. Lazic,P. -H. Chang,S. Smidstrup,D. Stradi,K. Stokbro,B. K. Nikolic###
(1834290, 1834290)
 The remnant of the Dirac cone ishybridized with evanescent wave functions injected by metallic layers andpushed, due to charge transfer from Co or Cu layers, few tenths of e<missing VAR>V belowE<missing VAR>F0 for both Bi2Se3/Co and Bi2Se3/Cu interfaces while hostingdistorted helical spin texture wounding around a single circle.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 12, ',', 5]

Cu
###Proximity band structure and spin textures on both sides of topological-insulator/ferromagnetic-metal interface and their transport probes|J. M. Marmolejo-Tejada,K. Dolui,P. Lazic,P. -H. Chang,S. Smidstrup,D. Stradi,K. Stokbro,B. K. Nikolic###
(1834294, 1834294)
 The remnant of the Dirac cone ishybridized with evanescent wave functions injected by metallic layers andpushed, due to charge transfer from Co or Cu layers, few tenths of e<missing VAR>V belowE<missing VAR>F0 for both Bi2Se3/Co and Bi2Se3/Cu interfaces while hostingdistorted helical spin texture wounding around a single circle.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 12, ',', 5]

V
###Proximity band structure and spin textures on both sides of topological-insulator/ferromagnetic-metal interface and their transport probes|J. M. Marmolejo-Tejada,K. Dolui,P. Lazic,P. -H. Chang,S. Smidstrup,D. Stradi,K. Stokbro,B. K. Nikolic###
(1834306, 1834306)
 The remnant of the Dirac cone ishybridized with evanescent wave functions injected by metallic layers andpushed, due to charge transfer from Co or Cu layers, few tenths of e<missing VAR>V belowE<missing VAR>F0 for both Bi2Se3/Co and Bi2Se3/Cu interfaces while hostingdistorted helical spin texture wounding around a single circle.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 12, ',', 5]

F0
###Proximity band structure and spin textures on both sides of topological-insulator/ferromagnetic-metal interface and their transport probes|J. M. Marmolejo-Tejada,K. Dolui,P. Lazic,P. -H. Chang,S. Smidstrup,D. Stradi,K. Stokbro,B. K. Nikolic###
(1834312, 1834313)
 The remnant of the Dirac cone ishybridized with evanescent wave functions injected by metallic layers andpushed, due to charge transfer from Co or Cu layers, few tenths of e<missing VAR>V belowE<missing VAR>F0 for both Bi2Se3/Co and Bi2Se3/Cu interfaces while hostingdistorted helical spin texture wounding around a single circle.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 12, ',', 5]

Bi2Se3/Co
###Proximity band structure and spin textures on both sides of topological-insulator/ferromagnetic-metal interface and their transport probes|J. M. Marmolejo-Tejada,K. Dolui,P. Lazic,P. -H. Chang,S. Smidstrup,D. Stradi,K. Stokbro,B. K. Nikolic###
(1834319, 1834324)
 The remnant of the Dirac cone ishybridized with evanescent wave functions injected by metallic layers andpushed, due to charge transfer from Co or Cu layers, few tenths of e<missing VAR>V belowE<missing VAR>F0 for both Bi2Se3/Co and Bi2Se3/Cu interfaces while hostingdistorted helical spin texture wounding around a single circle.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[70.0, 12, ',', 5]

Bi2Se3/Cu
###Proximity band structure and spin textures on both sides of topological-insulator/ferromagnetic-metal interface and their transport probes|J. M. Marmolejo-Tejada,K. Dolui,P. Lazic,P. -H. Chang,S. Smidstrup,D. Stradi,K. Stokbro,B. K. Nikolic###
(1834328, 1834333)
 The remnant of the Dirac cone ishybridized with evanescent wave functions injected by metallic layers andpushed, due to charge transfer from Co or Cu layers, few tenths of e<missing VAR>V belowE<missing VAR>F0 for both Bi2Se3/Co and Bi2Se3/Cu interfaces while hostingdistorted helical spin texture wounding around a single circle.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[61.0, 12, ',', 5]

K
###Proximity band structure and spin textures on both sides of topological-insulator/ferromagnetic-metal interface and their transport probes|J. M. Marmolejo-Tejada,K. Dolui,P. Lazic,P. -H. Chang,S. Smidstrup,D. Stradi,K. Stokbro,B. K. Nikolic###
(1834373, 1834373)
 These featuresexplain recent observation [K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 12, ',', 4]

I/Cu
###Proximity band structure and spin textures on both sides of topological-insulator/ferromagnetic-metal interface and their transport probes|J. M. Marmolejo-Tejada,K. Dolui,P. Lazic,P. -H. Chang,S. Smidstrup,D. Stradi,K. Stokbro,B. K. Nikolic###
(1834424, 1834426)
 bf 12, 1027(2016)] of sensitivity of spin-to-charge conversion signal at T<missing VAR>I/Cu interfaceto tuning of E<missing VAR>F0.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[30.0, 12, ',', 0]

F0
###Proximity band structure and spin textures on both sides of topological-insulator/ferromagnetic-metal interface and their transport probes|J. M. Marmolejo-Tejada,K. Dolui,P. Lazic,P. -H. Chang,S. Smidstrup,D. Stradi,K. Stokbro,B. K. Nikolic###
(1834438, 1834439)
 bf 12, 1027(2016)] of sensitivity of spin-to-charge conversion signal at T<missing VAR>I/Cu interfaceto tuning of E<missing VAR>F0.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 12, ',', 0]

Co
###Proximity band structure and spin textures on both sides of topological-insulator/ferromagnetic-metal interface and their transport probes|J. M. Marmolejo-Tejada,K. Dolui,P. Lazic,P. -H. Chang,S. Smidstrup,D. Stradi,K. Stokbro,B. K. Nikolic###
(1834451, 1834451)
 Interestingly, three monolayers of Co adjacent toBi2Se3 host spectral functions very different from the bulk metal, aswell as in-plane spin textures signifying the spin-orbit proximity effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[57.0, 12, ',', 1]

Bi2Se3
###Proximity band structure and spin textures on both sides of topological-insulator/ferromagnetic-metal interface and their transport probes|J. M. Marmolejo-Tejada,K. Dolui,P. Lazic,P. -H. Chang,S. Smidstrup,D. Stradi,K. Stokbro,B. K. Nikolic###
(1834458, 1834461)
 Interestingly, three monolayers of Co adjacent toBi2Se3 host spectral functions very different from the bulk metal, aswell as in-plane spin textures signifying the spin-orbit proximity effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 12, ',', 1]

Cu/Bi2Se3/Co
###Proximity band structure and spin textures on both sides of topological-insulator/ferromagnetic-metal interface and their transport probes|J. M. Marmolejo-Tejada,K. Dolui,P. Lazic,P. -H. Chang,S. Smidstrup,D. Stradi,K. Stokbro,B. K. Nikolic###
(1834536, 1834543)
 Wepredict that out-of-plane tunneling anisotropic magnetoresistance in verticalheterostructure Cu/Bi2Se3/Co, where current flowing perpendicular to itsinterfaces is modulated by rotating magnetization from parallel to orthogonalto current flow, can serve as a sensitive probe of spin texture residing atE<missing VAR>F0.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[142.0, 12, ',', 2]

F0
###Proximity band structure and spin textures on both sides of topological-insulator/ferromagnetic-metal interface and their transport probes|J. M. Marmolejo-Tejada,K. Dolui,P. Lazic,P. -H. Chang,S. Smidstrup,D. Stradi,K. Stokbro,B. K. Nikolic###
(1834611, 1834612)
 Wepredict that out-of-plane tunneling anisotropic magnetoresistance in verticalheterostructure Cu/Bi2Se3/Co, where current flowing perpendicular to itsinterfaces is modulated by rotating magnetization from parallel to orthogonalto current flow, can serve as a sensitive probe of spin texture residing atE<missing VAR>F0.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[217.0, 12, ',', 2]

II
###Universal response of the type-II Weyl semimetals phase diagram|P. Rüßmann,A. P. Weber,F. Glott,N. Xu,M. Fanciulli,S. Muff,A. Magrez,P. Bugnon,H. Berger,M. Bode,J. H. Dil,S. Blügel,P. Mavropoulos,P. Sessi###
(1834633, 1834634)
Universal response of the type-II Weyl semimetals phase diagram.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Universal response of the type-II Weyl semimetals phase diagram|P. Rüßmann,A. P. Weber,F. Glott,N. Xu,M. Fanciulli,S. Muff,A. Magrez,P. Bugnon,H. Berger,M. Bode,J. H. Dil,S. Blügel,P. Mavropoulos,P. Sessi###
(1834910, 1834911)
 Here, we focus on the type-II Weyl semimetal class wherewe find a stoichiometry-dependent phase transition from a trivial to anon-trivial regime.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###Detailed study on the Fermi surfaces of the type-II Dirac semimetallic candidates PdTe2 and PtTe2|W. Zheng,R. Schönemann,N. Aryal,Q. Zhou,D. Rhodes,Y. -C. Chiu,K. -W. Chen,E. Kampert,T. Förster,T. J. Martin,G. T. McCandless,J. Y. Chan,E. Manousakis,L. Balicas###
(1835259, 1835260)
Detailed study on the Fermi surfaces of the type-II Dirac semimetallic candidates PdTe2 and PtTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[271.0, 0.04, 'to', 4],[272.0, 1, 'bare', 4]

PdTe2
###Detailed study on the Fermi surfaces of the type-II Dirac semimetallic candidates PdTe2 and PtTe2|W. Zheng,R. Schönemann,N. Aryal,Q. Zhou,D. Rhodes,Y. -C. Chiu,K. -W. Chen,E. Kampert,T. Förster,T. J. Martin,G. T. McCandless,J. Y. Chan,E. Manousakis,L. Balicas###
(1835268, 1835270)
Detailed study on the Fermi surfaces of the type-II Dirac semimetallic candidates PdTe2 and PtTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[261.0, 0.04, 'to', 4],[262.0, 1, 'bare', 4]

PtTe2
###Detailed study on the Fermi surfaces of the type-II Dirac semimetallic candidates PdTe2 and PtTe2|W. Zheng,R. Schönemann,N. Aryal,Q. Zhou,D. Rhodes,Y. -C. Chiu,K. -W. Chen,E. Kampert,T. Förster,T. J. Martin,G. T. McCandless,J. Y. Chan,E. Manousakis,L. Balicas###
(1835274, 1835276)
Detailed study on the Fermi surfaces of the type-II Dirac semimetallic candidates PdTe2 and PtTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[255.0, 0.04, 'to', 4],[256.0, 1, 'bare', 4]

II
###Detailed study on the Fermi surfaces of the type-II Dirac semimetallic candidates PdTe2 and PtTe2|W. Zheng,R. Schönemann,N. Aryal,Q. Zhou,D. Rhodes,Y. -C. Chiu,K. -W. Chen,E. Kampert,T. Förster,T. J. Martin,G. T. McCandless,J. Y. Chan,E. Manousakis,L. Balicas###
(1835301, 1835302)
 We present a detailed quantum oscillatory study on the Dirac type-IIsemimetallic candidates PdTe2 and PtTe2 emphvia the temperatureand the angular dependence of the de Haas-van Alphen (d<missing VAR>HvA) and Shubnikov-deHaas (SdH) effects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[229.0, 0.04, 'to', 3],[230.0, 1, 'bare', 3]

PdTe2
###Detailed study on the Fermi surfaces of the type-II Dirac semimetallic candidates PdTe2 and PtTe2|W. Zheng,R. Schönemann,N. Aryal,Q. Zhou,D. Rhodes,Y. -C. Chiu,K. -W. Chen,E. Kampert,T. Förster,T. J. Martin,G. T. McCandless,J. Y. Chan,E. Manousakis,L. Balicas###
(1835309, 1835311)
 We present a detailed quantum oscillatory study on the Dirac type-IIsemimetallic candidates PdTe2 and PtTe2 emphvia the temperatureand the angular dependence of the de Haas-van Alphen (d<missing VAR>HvA) and Shubnikov-deHaas (SdH) effects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[220.0, 0.04, 'to', 3],[221.0, 1, 'bare', 3]

PtTe2
###Detailed study on the Fermi surfaces of the type-II Dirac semimetallic candidates PdTe2 and PtTe2|W. Zheng,R. Schönemann,N. Aryal,Q. Zhou,D. Rhodes,Y. -C. Chiu,K. -W. Chen,E. Kampert,T. Förster,T. J. Martin,G. T. McCandless,J. Y. Chan,E. Manousakis,L. Balicas###
(1835315, 1835317)
 We present a detailed quantum oscillatory study on the Dirac type-IIsemimetallic candidates PdTe2 and PtTe2 emphvia the temperatureand the angular dependence of the de Haas-van Alphen (d<missing VAR>HvA) and Shubnikov-deHaas (SdH) effects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[214.0, 0.04, 'to', 3],[215.0, 1, 'bare', 3]

H
###Detailed study on the Fermi surfaces of the type-II Dirac semimetallic candidates PdTe2 and PtTe2|W. Zheng,R. Schönemann,N. Aryal,Q. Zhou,D. Rhodes,Y. -C. Chiu,K. -W. Chen,E. Kampert,T. Förster,T. J. Martin,G. T. McCandless,J. Y. Chan,E. Manousakis,L. Balicas###
(1835364, 1835364)
 We present a detailed quantum oscillatory study on the Dirac type-IIsemimetallic candidates PdTe2 and PtTe2 emphvia the temperatureand the angular dependence of the de Haas-van Alphen (d<missing VAR>HvA) and Shubnikov-deHaas (SdH) effects.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[167.0, 0.04, 'to', 3],[168.0, 1, 'bare', 3]

In
###Detailed study on the Fermi surfaces of the type-II Dirac semimetallic candidates PdTe2 and PtTe2|W. Zheng,R. Schönemann,N. Aryal,Q. Zhou,D. Rhodes,Y. -C. Chiu,K. -W. Chen,E. Kampert,T. Förster,T. J. Martin,G. T. McCandless,J. Y. Chan,E. Manousakis,L. Balicas###
(1835370, 1835370)
 In high quality single crystals of both compounds, i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[161.0, 0.04, 'to', 2],[162.0, 1, 'bare', 2]

PtTe2
###Detailed study on the Fermi surfaces of the type-II Dirac semimetallic candidates PdTe2 and PtTe2|W. Zheng,R. Schönemann,N. Aryal,Q. Zhou,D. Rhodes,Y. -C. Chiu,K. -W. Chen,E. Kampert,T. Förster,T. J. Martin,G. T. McCandless,J. Y. Chan,E. Manousakis,L. Balicas###
(1835439, 1835441)
displaying carrier mobilities between 103 and 104 cm2/Vs, we observeda large non-saturating magnetoresistivity (MR) which in PtTe2 at atemperature T<missing VAR>  1.3 K, leads to an increase in the resistivity up to 5times 104 % under a magnetic field mu0 H  62 T<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 0.04, 'to', 1],[91.0, 1, 'bare', 1]

K
###Detailed study on the Fermi surfaces of the type-II Dirac semimetallic candidates PdTe2 and PtTe2|W. Zheng,R. Schönemann,N. Aryal,Q. Zhou,D. Rhodes,Y. -C. Chiu,K. -W. Chen,E. Kampert,T. Förster,T. J. Martin,G. T. McCandless,J. Y. Chan,E. Manousakis,L. Balicas###
(1835455, 1835455)
displaying carrier mobilities between 103 and 104 cm2/Vs, we observeda large non-saturating magnetoresistivity (MR) which in PtTe2 at atemperature T<missing VAR>  1.3 K, leads to an increase in the resistivity up to 5times 104 % under a magnetic field mu0 H  62 T<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 0.04, 'to', 1],[77.0, 1, 'bare', 1]

H
###Detailed study on the Fermi surfaces of the type-II Dirac semimetallic candidates PdTe2 and PtTe2|W. Zheng,R. Schönemann,N. Aryal,Q. Zhou,D. Rhodes,Y. -C. Chiu,K. -W. Chen,E. Kampert,T. Förster,T. J. Martin,G. T. McCandless,J. Y. Chan,E. Manousakis,L. Balicas###
(1835497, 1835497)
displaying carrier mobilities between 103 and 104 cm2/Vs, we observeda large non-saturating magnetoresistivity (MR) which in PtTe2 at atemperature T<missing VAR>  1.3 K, leads to an increase in the resistivity up to 5times 104 % under a magnetic field mu0 H  62 T<missing VAR>.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 0.04, 'to', 1],[35.0, 1, 'bare', 1]

PdTe2
###Detailed study on the Fermi surfaces of the type-II Dirac semimetallic candidates PdTe2 and PtTe2|W. Zheng,R. Schönemann,N. Aryal,Q. Zhou,D. Rhodes,Y. -C. Chiu,K. -W. Chen,E. Kampert,T. Förster,T. J. Martin,G. T. McCandless,J. Y. Chan,E. Manousakis,L. Balicas###
(1835550, 1835552)
 For PdTe2 the experimentallydetermined Fermi surface cross-sectional areas show an excellent agreement withthose resulting from band-structure calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 0.04, 'to', 1],[18.0, 1, 'bare', 1]

PtTe2
###Detailed study on the Fermi surfaces of the type-II Dirac semimetallic candidates PdTe2 and PtTe2|W. Zheng,R. Schönemann,N. Aryal,Q. Zhou,D. Rhodes,Y. -C. Chiu,K. -W. Chen,E. Kampert,T. Förster,T. J. Martin,G. T. McCandless,J. Y. Chan,E. Manousakis,L. Balicas###
(1835611, 1835613)
 Surprisingly, this is not thecase for PtTe2 whose agreement between calculations and experiments isrelatively poor even when electronic correlations are included in thecalculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 0.04, 'to', 2],[79.0, 1, 'bare', 2]

II
###Detailed study on the Fermi surfaces of the type-II Dirac semimetallic candidates PdTe2 and PtTe2|W. Zheng,R. Schönemann,N. Aryal,Q. Zhou,D. Rhodes,Y. -C. Chiu,K. -W. Chen,E. Kampert,T. Förster,T. J. Martin,G. T. McCandless,J. Y. Chan,E. Manousakis,L. Balicas###
(1835684, 1835685)
 Therefore, our study provides a strong support for the existenceof a Dirac type-II node in PdTe2 and probably also for PtTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 0.04, 'to', 3],[152.0, 1, 'bare', 3]

PdTe2
###Detailed study on the Fermi surfaces of the type-II Dirac semimetallic candidates PdTe2 and PtTe2|W. Zheng,R. Schönemann,N. Aryal,Q. Zhou,D. Rhodes,Y. -C. Chiu,K. -W. Chen,E. Kampert,T. Förster,T. J. Martin,G. T. McCandless,J. Y. Chan,E. Manousakis,L. Balicas###
(1835691, 1835693)
 Therefore, our study provides a strong support for the existenceof a Dirac type-II node in PdTe2 and probably also for PtTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 0.04, 'to', 3],[159.0, 1, 'bare', 3]

PtTe2
###Detailed study on the Fermi surfaces of the type-II Dirac semimetallic candidates PdTe2 and PtTe2|W. Zheng,R. Schönemann,N. Aryal,Q. Zhou,D. Rhodes,Y. -C. Chiu,K. -W. Chen,E. Kampert,T. Förster,T. J. Martin,G. T. McCandless,J. Y. Chan,E. Manousakis,L. Balicas###
(1835703, 1835705)
 Therefore, our study provides a strong support for the existenceof a Dirac type-II node in PdTe2 and probably also for PtTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[172.0, 0.04, 'to', 3],[171.0, 1, 'bare', 3]

PtTe2
###Detailed study on the Fermi surfaces of the type-II Dirac semimetallic candidates PdTe2 and PtTe2|W. Zheng,R. Schönemann,N. Aryal,Q. Zhou,D. Rhodes,Y. -C. Chiu,K. -W. Chen,E. Kampert,T. Förster,T. J. Martin,G. T. McCandless,J. Y. Chan,E. Manousakis,L. Balicas###
(1835732, 1835734)
 Bandstructure calculations indicate that the topologically non-trivial bands ofPtTe2 do not cross the Fermi-level (varepsilonF).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[201.0, 0.04, 'to', 4],[200.0, 1, 'bare', 4]

F
###Detailed study on the Fermi surfaces of the type-II Dirac semimetallic candidates PdTe2 and PtTe2|W. Zheng,R. Schönemann,N. Aryal,Q. Zhou,D. Rhodes,Y. -C. Chiu,K. -W. Chen,E. Kampert,T. Förster,T. J. Martin,G. T. McCandless,J. Y. Chan,E. Manousakis,L. Balicas###
(1835750, 1835750)
 Bandstructure calculations indicate that the topologically non-trivial bands ofPtTe2 do not cross the Fermi-level (varepsilonF).
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[219.0, 0.04, 'to', 4],[218.0, 1, 'bare', 4]

In
###Detailed study on the Fermi surfaces of the type-II Dirac semimetallic candidates PdTe2 and PtTe2|W. Zheng,R. Schönemann,N. Aryal,Q. Zhou,D. Rhodes,Y. -C. Chiu,K. -W. Chen,E. Kampert,T. Förster,T. J. Martin,G. T. McCandless,J. Y. Chan,E. Manousakis,L. Balicas###
(1835754, 1835754)
 In contrast, forPdTe2 the Dirac type-II cone does intersect varepsilonF, although ourcalculations also indicate that the associated cyclotron orbit on the Fermisurface is located in a distinct kz plane with respect to the one of theDirac type-II node.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[223.0, 0.04, 'to', 5],[222.0, 1, 'bare', 5]

PdTe2
###Detailed study on the Fermi surfaces of the type-II Dirac semimetallic candidates PdTe2 and PtTe2|W. Zheng,R. Schönemann,N. Aryal,Q. Zhou,D. Rhodes,Y. -C. Chiu,K. -W. Chen,E. Kampert,T. Förster,T. J. Martin,G. T. McCandless,J. Y. Chan,E. Manousakis,L. Balicas###
(1835762, 1835764)
 In contrast, forPdTe2 the Dirac type-II cone does intersect varepsilonF, although ourcalculations also indicate that the associated cyclotron orbit on the Fermisurface is located in a distinct kz plane with respect to the one of theDirac type-II node.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[231.0, 0.04, 'to', 5],[230.0, 1, 'bare', 5]

II
###Detailed study on the Fermi surfaces of the type-II Dirac semimetallic candidates PdTe2 and PtTe2|W. Zheng,R. Schönemann,N. Aryal,Q. Zhou,D. Rhodes,Y. -C. Chiu,K. -W. Chen,E. Kampert,T. Förster,T. J. Martin,G. T. McCandless,J. Y. Chan,E. Manousakis,L. Balicas###
(1835772, 1835773)
 In contrast, forPdTe2 the Dirac type-II cone does intersect varepsilonF, although ourcalculations also indicate that the associated cyclotron orbit on the Fermisurface is located in a distinct kz plane with respect to the one of theDirac type-II node.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[241.0, 0.04, 'to', 5],[240.0, 1, 'bare', 5]

F
###Detailed study on the Fermi surfaces of the type-II Dirac semimetallic candidates PdTe2 and PtTe2|W. Zheng,R. Schönemann,N. Aryal,Q. Zhou,D. Rhodes,Y. -C. Chiu,K. -W. Chen,E. Kampert,T. Förster,T. J. Martin,G. T. McCandless,J. Y. Chan,E. Manousakis,L. Balicas###
(1835782, 1835782)
 In contrast, forPdTe2 the Dirac type-II cone does intersect varepsilonF, although ourcalculations also indicate that the associated cyclotron orbit on the Fermisurface is located in a distinct kz plane with respect to the one of theDirac type-II node.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[251.0, 0.04, 'to', 5],[250.0, 1, 'bare', 5]

II
###Detailed study on the Fermi surfaces of the type-II Dirac semimetallic candidates PdTe2 and PtTe2|W. Zheng,R. Schönemann,N. Aryal,Q. Zhou,D. Rhodes,Y. -C. Chiu,K. -W. Chen,E. Kampert,T. Förster,T. J. Martin,G. T. McCandless,J. Y. Chan,E. Manousakis,L. Balicas###
(1835849, 1835850)
 In contrast, forPdTe2 the Dirac type-II cone does intersect varepsilonF, although ourcalculations also indicate that the associated cyclotron orbit on the Fermisurface is located in a distinct kz plane with respect to the one of theDirac type-II node.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[318.0, 0.04, 'to', 5],[317.0, 1, 'bare', 5]

(SOC)
###Spin-orbit driven band inversion in bilayer graphene by van der Waals proximity effect|J. O. Island,X. Cui,C. Lewandowski,J. Y. Khoo,E. M. Spanton,H. Zhou,D. Rhodes,J. C. Hone,T. Taniguchi,K. Watanabe,L. S. Levitov,M. P. Zaletel,A. F. Young###
(1835915, 1835919)
 Spin orbit coupling (SOC) is the key to realizing time-reversal invarianttopological phases of matter.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SOC
###Spin-orbit driven band inversion in bilayer graphene by van der Waals proximity effect|J. O. Island,X. Cui,C. Lewandowski,J. Y. Khoo,E. M. Spanton,H. Zhou,D. Rhodes,J. C. Hone,T. Taniguchi,K. Watanabe,L. S. Levitov,M. P. Zaletel,A. F. Young###
(1835950, 1835952)
 Famously, SOC was predicted by Kane and Mele tostabilize a quantum spin Hall insulator; however, the weak intrinsic SOC inmonolayer graphene has precluded experimental observation.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SOC
###Spin-orbit driven band inversion in bilayer graphene by van der Waals proximity effect|J. O. Island,X. Cui,C. Lewandowski,J. Y. Khoo,E. M. Spanton,H. Zhou,D. Rhodes,J. C. Hone,T. Taniguchi,K. Watanabe,L. S. Levitov,M. P. Zaletel,A. F. Young###
(1835991, 1835993)
 Famously, SOC was predicted by Kane and Mele tostabilize a quantum spin Hall insulator; however, the weak intrinsic SOC inmonolayer graphene has precluded experimental observation.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SOC
###Spin-orbit driven band inversion in bilayer graphene by van der Waals proximity effect|J. O. Island,X. Cui,C. Lewandowski,J. Y. Khoo,E. M. Spanton,H. Zhou,D. Rhodes,J. C. Hone,T. Taniguchi,K. Watanabe,L. S. Levitov,M. P. Zaletel,A. F. Young###
(1836065, 1836067)
 Here, we exploit alayer-selective proximity effect---achieved via van der Waals contact to asemiconducting transition metal dichalcogenide--to engineer Kane-Mele SOC inultra-clean textitbilayer graphene.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SOC
###Spin-orbit driven band inversion in bilayer graphene by van der Waals proximity effect|J. O. Island,X. Cui,C. Lewandowski,J. Y. Khoo,E. M. Spanton,H. Zhou,D. Rhodes,J. C. Hone,T. Taniguchi,K. Watanabe,L. S. Levitov,M. P. Zaletel,A. F. Young###
(1836112, 1836114)
 Using high-resolution capacitancemeasurements to probe the bulk electronic compressibility, we find that SOCleads to the formation of a distinct incompressible, gapped phase at chargeneutrality.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SOC
###Spin-orbit driven band inversion in bilayer graphene by van der Waals proximity effect|J. O. Island,X. Cui,C. Lewandowski,J. Y. Khoo,E. M. Spanton,H. Zhou,D. Rhodes,J. C. Hone,T. Taniguchi,K. Watanabe,L. S. Levitov,M. P. Zaletel,A. F. Young###
(1836181, 1836183)
 The experimental data agrees quantitatively with a simpletheoretical model in which the new phase results from SOC-driven bandinversion.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Spin-orbit driven band inversion in bilayer graphene by van der Waals proximity effect|J. O. Island,X. Cui,C. Lewandowski,J. Y. Khoo,E. M. Spanton,H. Zhou,D. Rhodes,J. C. Hone,T. Taniguchi,K. Watanabe,L. S. Levitov,M. P. Zaletel,A. F. Young###
(1836193, 1836193)
 In contrast to Kane-Mele SOC in monolayer graphene, the invertedphase is not expected to be a time reversal invariant topological insulator,despite being separated from conventional band insulators by electric fieldtuned phase transitions where crystal symmetry mandates that the bulk gap mustclose.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SOC
###Spin-orbit driven band inversion in bilayer graphene by van der Waals proximity effect|J. O. Island,X. Cui,C. Lewandowski,J. Y. Khoo,E. M. Spanton,H. Zhou,D. Rhodes,J. C. Hone,T. Taniguchi,K. Watanabe,L. S. Levitov,M. P. Zaletel,A. F. Young###
(1836203, 1836205)
 In contrast to Kane-Mele SOC in monolayer graphene, the invertedphase is not expected to be a time reversal invariant topological insulator,despite being separated from conventional band insulators by electric fieldtuned phase transitions where crystal symmetry mandates that the bulk gap mustclose.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SOC
###Spin-orbit driven band inversion in bilayer graphene by van der Waals proximity effect|J. O. Island,X. Cui,C. Lewandowski,J. Y. Khoo,E. M. Spanton,H. Zhou,D. Rhodes,J. C. Hone,T. Taniguchi,K. Watanabe,L. S. Levitov,M. P. Zaletel,A. F. Young###
(1836430, 1836432)
 The high conductivity andanomalous magnetoresistance are consistent with theoretical models that predicthelical edge states within the inversted phase, that are protected frombackscattering by an emergent spin symmetry that remains robust even for largeRashba SOC.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

LaTe3
###Fascinating interplay between Charge Density Wave Order and magnetic field in Non-magnetic Rare-Earth Tritelluride LaTe$_{3}$|Arnab Pariari,Sudipta Koley,Shubhankar Roy,Ratnadwip Singha,Mukul S. Laad,A. Taraphder,Prabhat Mandal###
(1836532, 1836534)
Fascinating interplay between Charge Density Wave Order and magnetic field in Non-magnetic Rare-Earth Tritelluride LaTe3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[352.0, 33000, 'cm', 4]

C
###Fascinating interplay between Charge Density Wave Order and magnetic field in Non-magnetic Rare-Earth Tritelluride LaTe$_{3}$|Arnab Pariari,Sudipta Koley,Shubhankar Roy,Ratnadwip Singha,Mukul S. Laad,A. Taraphder,Prabhat Mandal###
(1836544, 1836544)
 Charge density wave (CD<missing VAR>W) states in solids bear an intimate connection tounderlying fermiology.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[342.0, 33000, 'cm', 3]

W
###Fascinating interplay between Charge Density Wave Order and magnetic field in Non-magnetic Rare-Earth Tritelluride LaTe$_{3}$|Arnab Pariari,Sudipta Koley,Shubhankar Roy,Ratnadwip Singha,Mukul S. Laad,A. Taraphder,Prabhat Mandal###
(1836546, 1836546)
 Charge density wave (CD<missing VAR>W) states in solids bear an intimate connection tounderlying fermiology.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[340.0, 33000, 'cm', 3]

C
###Fascinating interplay between Charge Density Wave Order and magnetic field in Non-magnetic Rare-Earth Tritelluride LaTe$_{3}$|Arnab Pariari,Sudipta Koley,Shubhankar Roy,Ratnadwip Singha,Mukul S. Laad,A. Taraphder,Prabhat Mandal###
(1836602, 1836602)
 Modification of the latter by a suitable perturbationprovides an attractive handle to unearth novel CD<missing VAR>W states.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[284.0, 33000, 'cm', 2]

W
###Fascinating interplay between Charge Density Wave Order and magnetic field in Non-magnetic Rare-Earth Tritelluride LaTe$_{3}$|Arnab Pariari,Sudipta Koley,Shubhankar Roy,Ratnadwip Singha,Mukul S. Laad,A. Taraphder,Prabhat Mandal###
(1836604, 1836604)
 Modification of the latter by a suitable perturbationprovides an attractive handle to unearth novel CD<missing VAR>W states.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[282.0, 33000, 'cm', 2]

LaTe3
###Fascinating interplay between Charge Density Wave Order and magnetic field in Non-magnetic Rare-Earth Tritelluride LaTe$_{3}$|Arnab Pariari,Sudipta Koley,Shubhankar Roy,Ratnadwip Singha,Mukul S. Laad,A. Taraphder,Prabhat Mandal###
(1836646, 1836648)
 Here, we combineextensive magnetotransport experiments and first-principles electronicstructure calculations on a non-magnetic tritelluride LaTe3 single crystalto uncover phenomena rare in CD<missing VAR>W systems (i) hump-like feature in thetemperature dependence of resistivity at low temperature under application ofmagnetic field, which moves to higher temperature with increasing fieldstrength, (ii) highly anisotropic large transverse magnetoresistance (MR)upon rotation of magnetic field about current parallel to crystallographicc<missing VAR>-axis, (iii) anomalously large positive MR with spike-like peaks atcharacteristic angles when the angle between current and field is varied in thebc-plane, (iv) extreme sensitivity of the angular variation of MR on field andtemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[238.0, 33000, 'cm', 1]

C
###Fascinating interplay between Charge Density Wave Order and magnetic field in Non-magnetic Rare-Earth Tritelluride LaTe$_{3}$|Arnab Pariari,Sudipta Koley,Shubhankar Roy,Ratnadwip Singha,Mukul S. Laad,A. Taraphder,Prabhat Mandal###
(1836665, 1836665)
 Here, we combineextensive magnetotransport experiments and first-principles electronicstructure calculations on a non-magnetic tritelluride LaTe3 single crystalto uncover phenomena rare in CD<missing VAR>W systems (i) hump-like feature in thetemperature dependence of resistivity at low temperature under application ofmagnetic field, which moves to higher temperature with increasing fieldstrength, (ii) highly anisotropic large transverse magnetoresistance (MR)upon rotation of magnetic field about current parallel to crystallographicc<missing VAR>-axis, (iii) anomalously large positive MR with spike-like peaks atcharacteristic angles when the angle between current and field is varied in thebc-plane, (iv) extreme sensitivity of the angular variation of MR on field andtemperature.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[221.0, 33000, 'cm', 1]

W
###Fascinating interplay between Charge Density Wave Order and magnetic field in Non-magnetic Rare-Earth Tritelluride LaTe$_{3}$|Arnab Pariari,Sudipta Koley,Shubhankar Roy,Ratnadwip Singha,Mukul S. Laad,A. Taraphder,Prabhat Mandal###
(1836667, 1836667)
 Here, we combineextensive magnetotransport experiments and first-principles electronicstructure calculations on a non-magnetic tritelluride LaTe3 single crystalto uncover phenomena rare in CD<missing VAR>W systems (i) hump-like feature in thetemperature dependence of resistivity at low temperature under application ofmagnetic field, which moves to higher temperature with increasing fieldstrength, (ii) highly anisotropic large transverse magnetoresistance (MR)upon rotation of magnetic field about current parallel to crystallographicc<missing VAR>-axis, (iii) anomalously large positive MR with spike-like peaks atcharacteristic angles when the angle between current and field is varied in thebc-plane, (iv) extreme sensitivity of the angular variation of MR on field andtemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[219.0, 33000, 'cm', 1]

F
###Fascinating interplay between Charge Density Wave Order and magnetic field in Non-magnetic Rare-Earth Tritelluride LaTe$_{3}$|Arnab Pariari,Sudipta Koley,Shubhankar Roy,Ratnadwip Singha,Mukul S. Laad,A. Taraphder,Prabhat Mandal###
(1836959, 1836959)
 These novel observations find a comprehensiveexplication in our density functional theory (DFT) and dynamical mean fieldtheory (DMFT) calculations that capture field-induced electronic structuremodification in LaTe3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 33000, 'cm', 1]

LaTe3
###Fascinating interplay between Charge Density Wave Order and magnetic field in Non-magnetic Rare-Earth Tritelluride LaTe$_{3}$|Arnab Pariari,Sudipta Koley,Shubhankar Roy,Ratnadwip Singha,Mukul S. Laad,A. Taraphder,Prabhat Mandal###
(1836982, 1836984)
 These novel observations find a comprehensiveexplication in our density functional theory (DFT) and dynamical mean fieldtheory (DMFT) calculations that capture field-induced electronic structuremodification in LaTe3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 33000, 'cm', 1]

C
###Fascinating interplay between Charge Density Wave Order and magnetic field in Non-magnetic Rare-Earth Tritelluride LaTe$_{3}$|Arnab Pariari,Sudipta Koley,Shubhankar Roy,Ratnadwip Singha,Mukul S. Laad,A. Taraphder,Prabhat Mandal###
(1837020, 1837020)
 The band structure theory together with transportcalculations suggest the possibility of a second field-induced CD<missing VAR>W transitionfrom the field-reconstructed Fermi surface, which qualitatively explains thehump in temperature dependence of resistivity at low temperature.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[134.0, 33000, 'cm', 2]

W
###Fascinating interplay between Charge Density Wave Order and magnetic field in Non-magnetic Rare-Earth Tritelluride LaTe$_{3}$|Arnab Pariari,Sudipta Koley,Shubhankar Roy,Ratnadwip Singha,Mukul S. Laad,A. Taraphder,Prabhat Mandal###
(1837022, 1837022)
 The band structure theory together with transportcalculations suggest the possibility of a second field-induced CD<missing VAR>W transitionfrom the field-reconstructed Fermi surface, which qualitatively explains thehump in temperature dependence of resistivity at low temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 33000, 'cm', 2]

C
###Fascinating interplay between Charge Density Wave Order and magnetic field in Non-magnetic Rare-Earth Tritelluride LaTe$_{3}$|Arnab Pariari,Sudipta Koley,Shubhankar Roy,Ratnadwip Singha,Mukul S. Laad,A. Taraphder,Prabhat Mandal###
(1837092, 1837092)
 Thus, ourstudy exposes the novel manifestations of the interplay between CD<missing VAR>W order andfield-induced electronic structure modifications in LaTe3, and establishesa new route to tune CD<missing VAR>W states by perturbations like magnetic field.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[206.0, 33000, 'cm', 3]

W
###Fascinating interplay between Charge Density Wave Order and magnetic field in Non-magnetic Rare-Earth Tritelluride LaTe$_{3}$|Arnab Pariari,Sudipta Koley,Shubhankar Roy,Ratnadwip Singha,Mukul S. Laad,A. Taraphder,Prabhat Mandal###
(1837094, 1837094)
 Thus, ourstudy exposes the novel manifestations of the interplay between CD<missing VAR>W order andfield-induced electronic structure modifications in LaTe3, and establishesa new route to tune CD<missing VAR>W states by perturbations like magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[208.0, 33000, 'cm', 3]

LaTe3
###Fascinating interplay between Charge Density Wave Order and magnetic field in Non-magnetic Rare-Earth Tritelluride LaTe$_{3}$|Arnab Pariari,Sudipta Koley,Shubhankar Roy,Ratnadwip Singha,Mukul S. Laad,A. Taraphder,Prabhat Mandal###
(1837113, 1837115)
 Thus, ourstudy exposes the novel manifestations of the interplay between CD<missing VAR>W order andfield-induced electronic structure modifications in LaTe3, and establishesa new route to tune CD<missing VAR>W states by perturbations like magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[227.0, 33000, 'cm', 3]

C
###Fascinating interplay between Charge Density Wave Order and magnetic field in Non-magnetic Rare-Earth Tritelluride LaTe$_{3}$|Arnab Pariari,Sudipta Koley,Shubhankar Roy,Ratnadwip Singha,Mukul S. Laad,A. Taraphder,Prabhat Mandal###
(1837133, 1837133)
 Thus, ourstudy exposes the novel manifestations of the interplay between CD<missing VAR>W order andfield-induced electronic structure modifications in LaTe3, and establishesa new route to tune CD<missing VAR>W states by perturbations like magnetic field.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[247.0, 33000, 'cm', 3]

W
###Fascinating interplay between Charge Density Wave Order and magnetic field in Non-magnetic Rare-Earth Tritelluride LaTe$_{3}$|Arnab Pariari,Sudipta Koley,Shubhankar Roy,Ratnadwip Singha,Mukul S. Laad,A. Taraphder,Prabhat Mandal###
(1837135, 1837135)
 Thus, ourstudy exposes the novel manifestations of the interplay between CD<missing VAR>W order andfield-induced electronic structure modifications in LaTe3, and establishesa new route to tune CD<missing VAR>W states by perturbations like magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[249.0, 33000, 'cm', 3]

Pr
###Influence of Pr substitution on physical properties of Ce$_{1-x}$Pr$_x$CoGe$_3$ system: A combined experimental and first-principles study|P. Skokowski,K. Synoradzki,M. Werwiński,A. Bajorek,G. Chełkowska,T. Toliński###
(1837162, 1837162)
Influence of Pr substitution on physical properties of Ce1-xPrx<missing VAR>CoGe3 system A combined experimental and first-principles study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ce1-xPr
###Influence of Pr substitution on physical properties of Ce$_{1-x}$Pr$_x$CoGe$_3$ system: A combined experimental and first-principles study|P. Skokowski,K. Synoradzki,M. Werwiński,A. Bajorek,G. Chełkowska,T. Toliński###
(1837174, 1837178)
Influence of Pr substitution on physical properties of Ce1-xPrx<missing VAR>CoGe3 system A combined experimental and first-principles study.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

CoGe3
###Influence of Pr substitution on physical properties of Ce$_{1-x}$Pr$_x$CoGe$_3$ system: A combined experimental and first-principles study|P. Skokowski,K. Synoradzki,M. Werwiński,A. Bajorek,G. Chełkowska,T. Toliński###
(1837180, 1837182)
Influence of Pr substitution on physical properties of Ce1-xPrx<missing VAR>CoGe3 system A combined experimental and first-principles study.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ce1-xPr
###Influence of Pr substitution on physical properties of Ce$_{1-x}$Pr$_x$CoGe$_3$ system: A combined experimental and first-principles study|P. Skokowski,K. Synoradzki,M. Werwiński,A. Bajorek,G. Chełkowska,T. Toliński###
(1837228, 1837232)
 We present the results of our investigations of physical properties for thenovel Ce1-xPrx<missing VAR>CoGe3 system performed with a number of experimentalmethods magnetic susceptibility, specific heat, electrical resistivity,magnetoresistance, and thermoelectric power.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

CoGe3
###Influence of Pr substitution on physical properties of Ce$_{1-x}$Pr$_x$CoGe$_3$ system: A combined experimental and first-principles study|P. Skokowski,K. Synoradzki,M. Werwiński,A. Bajorek,G. Chełkowska,T. Toliński###
(1837234, 1837236)
 We present the results of our investigations of physical properties for thenovel Ce1-xPrx<missing VAR>CoGe3 system performed with a number of experimentalmethods magnetic susceptibility, specific heat, electrical resistivity,magnetoresistance, and thermoelectric power.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ce1-xPr
###Influence of Pr substitution on physical properties of Ce$_{1-x}$Pr$_x$CoGe$_3$ system: A combined experimental and first-principles study|P. Skokowski,K. Synoradzki,M. Werwiński,A. Bajorek,G. Chełkowska,T. Toliński###
(1837328, 1837332)
 All investigated compositions of theCe1-xPrx<missing VAR>CoGe3 series crystallize in the tetragonal BaNiSn3-typestructure.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

CoGe3
###Influence of Pr substitution on physical properties of Ce$_{1-x}$Pr$_x$CoGe$_3$ system: A combined experimental and first-principles study|P. Skokowski,K. Synoradzki,M. Werwiński,A. Bajorek,G. Chełkowska,T. Toliński###
(1837334, 1837336)
 All investigated compositions of theCe1-xPrx<missing VAR>CoGe3 series crystallize in the tetragonal BaNiSn3-typestructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

BaNiSn3
###Influence of Pr substitution on physical properties of Ce$_{1-x}$Pr$_x$CoGe$_3$ system: A combined experimental and first-principles study|P. Skokowski,K. Synoradzki,M. Werwiński,A. Bajorek,G. Chełkowska,T. Toliński###
(1837348, 1837351)
 All investigated compositions of theCe1-xPrx<missing VAR>CoGe3 series crystallize in the tetragonal BaNiSn3-typestructure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pr
###Influence of Pr substitution on physical properties of Ce$_{1-x}$Pr$_x$CoGe$_3$ system: A combined experimental and first-principles study|P. Skokowski,K. Synoradzki,M. Werwiński,A. Bajorek,G. Chełkowska,T. Toliński###
(1837380, 1837380)
 The lattice parameters and unit cell volumes decrease withincreasing Pr concentration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pr
###Influence of Pr substitution on physical properties of Ce$_{1-x}$Pr$_x$CoGe$_3$ system: A combined experimental and first-principles study|P. Skokowski,K. Synoradzki,M. Werwiński,A. Bajorek,G. Chełkowska,T. Toliński###
(1837445, 1837445)
 A continuous suppression of thelong-range magnetic ordering was observed with increase of Pr concentration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pr
###Influence of Pr substitution on physical properties of Ce$_{1-x}$Pr$_x$CoGe$_3$ system: A combined experimental and first-principles study|P. Skokowski,K. Synoradzki,M. Werwiński,A. Bajorek,G. Chełkowska,T. Toliński###
(1837455, 1837455)
The critical Pr concentration for magnetic moment ordering was determined fromlinear extrapolation of the ordering temperature versus x<missing VAR> to the lowesttemperatures (T<missing VAR>  0 K) and is equal to about 0.66.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

K
###Influence of Pr substitution on physical properties of Ce$_{1-x}$Pr$_x$CoGe$_3$ system: A combined experimental and first-principles study|P. Skokowski,K. Synoradzki,M. Werwiński,A. Bajorek,G. Chełkowska,T. Toliński###
(1837505, 1837505)
The critical Pr concentration for magnetic moment ordering was determined fromlinear extrapolation of the ordering temperature versus x<missing VAR> to the lowesttemperatures (T<missing VAR>  0 K) and is equal to about 0.66.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pr
###Influence of Pr substitution on physical properties of Ce$_{1-x}$Pr$_x$CoGe$_3$ system: A combined experimental and first-principles study|P. Skokowski,K. Synoradzki,M. Werwiński,A. Bajorek,G. Chełkowska,T. Toliński###
(1837546, 1837546)
 Based on thefirst-principles calculations we show how the substitution of Pr for Ce affectsthe electronic structure and magnetic properties of the considered alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ce
###Influence of Pr substitution on physical properties of Ce$_{1-x}$Pr$_x$CoGe$_3$ system: A combined experimental and first-principles study|P. Skokowski,K. Synoradzki,M. Werwiński,A. Bajorek,G. Chełkowska,T. Toliński###
(1837550, 1837550)
 Based on thefirst-principles calculations we show how the substitution of Pr for Ce affectsthe electronic structure and magnetic properties of the considered alloys.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

U
###Influence of Pr substitution on physical properties of Ce$_{1-x}$Pr$_x$CoGe$_3$ system: A combined experimental and first-principles study|P. Skokowski,K. Synoradzki,M. Werwiński,A. Bajorek,G. Chełkowska,T. Toliński###
(1837612, 1837612)
Within a single model we take into account the magnetic ordering,fully-relativistic effects, and Hubbard U repulsion on Ce and Pr.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ce
###Influence of Pr substitution on physical properties of Ce$_{1-x}$Pr$_x$CoGe$_3$ system: A combined experimental and first-principles study|P. Skokowski,K. Synoradzki,M. Werwiński,A. Bajorek,G. Chełkowska,T. Toliński###
(1837618, 1837618)
Within a single model we take into account the magnetic ordering,fully-relativistic effects, and Hubbard U repulsion on Ce and Pr.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pr
###Influence of Pr substitution on physical properties of Ce$_{1-x}$Pr$_x$CoGe$_3$ system: A combined experimental and first-principles study|P. Skokowski,K. Synoradzki,M. Werwiński,A. Bajorek,G. Chełkowska,T. Toliński###
(1837622, 1837622)
Within a single model we take into account the magnetic ordering,fully-relativistic effects, and Hubbard U repulsion on Ce and Pr.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

U
###Influence of Pr substitution on physical properties of Ce$_{1-x}$Pr$_x$CoGe$_3$ system: A combined experimental and first-principles study|P. Skokowski,K. Synoradzki,M. Werwiński,A. Bajorek,G. Chełkowska,T. Toliński###
(1837634, 1837634)
 The impact ofHubbard U on the results of calculations is also discussed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CeCoGe3
###Influence of Pr substitution on physical properties of Ce$_{1-x}$Pr$_x$CoGe$_3$ system: A combined experimental and first-principles study|P. Skokowski,K. Synoradzki,M. Werwiński,A. Bajorek,G. Chełkowska,T. Toliński###
(1837692, 1837695)
 For CeCoGe3 it is found that the-- configuration of magnetic moments on Ce is slightly more stable than the-- one, and also that the calculated value of total magnetic moment on Ce(including spin and orbital parts) is in good agreement with the measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ce
###Influence of Pr substitution on physical properties of Ce$_{1-x}$Pr$_x$CoGe$_3$ system: A combined experimental and first-principles study|P. Skokowski,K. Synoradzki,M. Werwiński,A. Bajorek,G. Chełkowska,T. Toliński###
(1837721, 1837721)
 For CeCoGe3 it is found that the-- configuration of magnetic moments on Ce is slightly more stable than the-- one, and also that the calculated value of total magnetic moment on Ce(including spin and orbital parts) is in good agreement with the measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ce
###Influence of Pr substitution on physical properties of Ce$_{1-x}$Pr$_x$CoGe$_3$ system: A combined experimental and first-principles study|P. Skokowski,K. Synoradzki,M. Werwiński,A. Bajorek,G. Chełkowska,T. Toliński###
(1837764, 1837764)
 For CeCoGe3 it is found that the-- configuration of magnetic moments on Ce is slightly more stable than the-- one, and also that the calculated value of total magnetic moment on Ce(including spin and orbital parts) is in good agreement with the measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Fe
###Transport and superconducting properties of Fe-based superconductors: SmFeAs(O1-x Fx) versus Fe1+y (Te1-x, Sex)|M. Tropeano,I. Pallecchi,M. R. Cimberle,C. Ferdeghini,G. Lamura,M. Vignolo,A. Martinelli,A. Palenzona,M. Putti###
(1837812, 1837812)
Transport and superconducting properties of Fe-based superconductors SmFeAs(O1-x Fx) versus Fe1y<missing VAR> (Te1-x, Sex).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[170.0, 2, ',', 1]

As
###Transport and superconducting properties of Fe-based superconductors: SmFeAs(O1-x Fx) versus Fe1+y (Te1-x, Sex)|M. Tropeano,I. Pallecchi,M. R. Cimberle,C. Ferdeghini,G. Lamura,M. Vignolo,A. Martinelli,A. Palenzona,M. Putti###
(1837820, 1837820)
Transport and superconducting properties of Fe-based superconductors SmFeAs(O1-x Fx) versus Fe1y<missing VAR> (Te1-x, Sex).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 2, ',', 1]

O1-x
###Transport and superconducting properties of Fe-based superconductors: SmFeAs(O1-x Fx) versus Fe1+y (Te1-x, Sex)|M. Tropeano,I. Pallecchi,M. R. Cimberle,C. Ferdeghini,G. Lamura,M. Vignolo,A. Martinelli,A. Palenzona,M. Putti###
(1837822, 1837825)
Transport and superconducting properties of Fe-based superconductors SmFeAs(O1-x Fx) versus Fe1y<missing VAR> (Te1-x, Sex).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[157.0, 2, ',', 1]

Fe1
###Transport and superconducting properties of Fe-based superconductors: SmFeAs(O1-x Fx) versus Fe1+y (Te1-x, Sex)|M. Tropeano,I. Pallecchi,M. R. Cimberle,C. Ferdeghini,G. Lamura,M. Vignolo,A. Martinelli,A. Palenzona,M. Putti###
(1837832, 1837833)
Transport and superconducting properties of Fe-based superconductors SmFeAs(O1-x Fx) versus Fe1y<missing VAR> (Te1-x, Sex).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[149.0, 2, ',', 1]

Te1-x
###Transport and superconducting properties of Fe-based superconductors: SmFeAs(O1-x Fx) versus Fe1+y (Te1-x, Sex)|M. Tropeano,I. Pallecchi,M. R. Cimberle,C. Ferdeghini,G. Lamura,M. Vignolo,A. Martinelli,A. Palenzona,M. Putti###
(1837837, 1837840)
Transport and superconducting properties of Fe-based superconductors SmFeAs(O1-x Fx) versus Fe1y<missing VAR> (Te1-x, Sex).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[142.0, 2, ',', 1]

Fe
###Transport and superconducting properties of Fe-based superconductors: SmFeAs(O1-x Fx) versus Fe1+y (Te1-x, Sex)|M. Tropeano,I. Pallecchi,M. R. Cimberle,C. Ferdeghini,G. Lamura,M. Vignolo,A. Martinelli,A. Palenzona,M. Putti###
(1837904, 1837904)
 We present transport and superconducting properties - namely resistivity,magnetoresistivity, Hall effect, Seebeck effect, thermal conductivity, uppercritical field - of two different families of Fe-based superconductors, whichcan be viewed in many respects as end members SmFeAs(O1-xFx) with the largestTc and the largest anisotropy and Fe1y<missing VAR>(Te1-x,Sex), with the largest Hc2, thelowest Tc and the lowest anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[78.0, 2, ',', 0]

As
###Transport and superconducting properties of Fe-based superconductors: SmFeAs(O1-x Fx) versus Fe1+y (Te1-x, Sex)|M. Tropeano,I. Pallecchi,M. R. Cimberle,C. Ferdeghini,G. Lamura,M. Vignolo,A. Martinelli,A. Palenzona,M. Putti###
(1837934, 1837934)
 We present transport and superconducting properties - namely resistivity,magnetoresistivity, Hall effect, Seebeck effect, thermal conductivity, uppercritical field - of two different families of Fe-based superconductors, whichcan be viewed in many respects as end members SmFeAs(O1-xFx) with the largestTc and the largest anisotropy and Fe1y<missing VAR>(Te1-x,Sex), with the largest Hc2, thelowest Tc and the lowest anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 2, ',', 0]

O1-x
###Transport and superconducting properties of Fe-based superconductors: SmFeAs(O1-x Fx) versus Fe1+y (Te1-x, Sex)|M. Tropeano,I. Pallecchi,M. R. Cimberle,C. Ferdeghini,G. Lamura,M. Vignolo,A. Martinelli,A. Palenzona,M. Putti###
(1837936, 1837939)
 We present transport and superconducting properties - namely resistivity,magnetoresistivity, Hall effect, Seebeck effect, thermal conductivity, uppercritical field - of two different families of Fe-based superconductors, whichcan be viewed in many respects as end members SmFeAs(O1-xFx) with the largestTc and the largest anisotropy and Fe1y<missing VAR>(Te1-x,Sex), with the largest Hc2, thelowest Tc and the lowest anisotropy.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[43.0, 2, ',', 0]

Tc
###Transport and superconducting properties of Fe-based superconductors: SmFeAs(O1-x Fx) versus Fe1+y (Te1-x, Sex)|M. Tropeano,I. Pallecchi,M. R. Cimberle,C. Ferdeghini,G. Lamura,M. Vignolo,A. Martinelli,A. Palenzona,M. Putti###
(1837950, 1837950)
 We present transport and superconducting properties - namely resistivity,magnetoresistivity, Hall effect, Seebeck effect, thermal conductivity, uppercritical field - of two different families of Fe-based superconductors, whichcan be viewed in many respects as end members SmFeAs(O1-xFx) with the largestTc and the largest anisotropy and Fe1y<missing VAR>(Te1-x,Sex), with the largest Hc2, thelowest Tc and the lowest anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 2, ',', 0]

Fe1
###Transport and superconducting properties of Fe-based superconductors: SmFeAs(O1-x Fx) versus Fe1+y (Te1-x, Sex)|M. Tropeano,I. Pallecchi,M. R. Cimberle,C. Ferdeghini,G. Lamura,M. Vignolo,A. Martinelli,A. Palenzona,M. Putti###
(1837962, 1837963)
 We present transport and superconducting properties - namely resistivity,magnetoresistivity, Hall effect, Seebeck effect, thermal conductivity, uppercritical field - of two different families of Fe-based superconductors, whichcan be viewed in many respects as end members SmFeAs(O1-xFx) with the largestTc and the largest anisotropy and Fe1y<missing VAR>(Te1-x,Sex), with the largest Hc2, thelowest Tc and the lowest anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 2, ',', 0]

Te1-x
###Transport and superconducting properties of Fe-based superconductors: SmFeAs(O1-x Fx) versus Fe1+y (Te1-x, Sex)|M. Tropeano,I. Pallecchi,M. R. Cimberle,C. Ferdeghini,G. Lamura,M. Vignolo,A. Martinelli,A. Palenzona,M. Putti###
(1837966, 1837969)
 We present transport and superconducting properties - namely resistivity,magnetoresistivity, Hall effect, Seebeck effect, thermal conductivity, uppercritical field - of two different families of Fe-based superconductors, whichcan be viewed in many respects as end members SmFeAs(O1-xFx) with the largestTc and the largest anisotropy and Fe1y<missing VAR>(Te1-x,Sex), with the largest Hc2, thelowest Tc and the lowest anisotropy.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[13.0, 2, ',', 0]

Tc
###Transport and superconducting properties of Fe-based superconductors: SmFeAs(O1-x Fx) versus Fe1+y (Te1-x, Sex)|M. Tropeano,I. Pallecchi,M. R. Cimberle,C. Ferdeghini,G. Lamura,M. Vignolo,A. Martinelli,A. Palenzona,M. Putti###
(1837990, 1837990)
 We present transport and superconducting properties - namely resistivity,magnetoresistivity, Hall effect, Seebeck effect, thermal conductivity, uppercritical field - of two different families of Fe-based superconductors, whichcan be viewed in many respects as end members SmFeAs(O1-xFx) with the largestTc and the largest anisotropy and Fe1y<missing VAR>(Te1-x,Sex), with the largest Hc2, thelowest Tc and the lowest anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 2, ',', 0]

In
###Transport and superconducting properties of Fe-based superconductors: SmFeAs(O1-x Fx) versus Fe1+y (Te1-x, Sex)|M. Tropeano,I. Pallecchi,M. R. Cimberle,C. Ferdeghini,G. Lamura,M. Vignolo,A. Martinelli,A. Palenzona,M. Putti###
(1838001, 1838001)
 In the case of the SmFeAs(O1-xFx) series,we find that a single band description allows to extract an approximatedestimation of band parameters such as carrier density and mobility fromexperimental data, although the behaviour of Seebeck effect as a function ofdoping demonstrates that a multiband description would be more appropriate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 2, ',', 1]

As
###Transport and superconducting properties of Fe-based superconductors: SmFeAs(O1-x Fx) versus Fe1+y (Te1-x, Sex)|M. Tropeano,I. Pallecchi,M. R. Cimberle,C. Ferdeghini,G. Lamura,M. Vignolo,A. Martinelli,A. Palenzona,M. Putti###
(1838013, 1838013)
 In the case of the SmFeAs(O1-xFx) series,we find that a single band description allows to extract an approximatedestimation of band parameters such as carrier density and mobility fromexperimental data, although the behaviour of Seebeck effect as a function ofdoping demonstrates that a multiband description would be more appropriate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 2, ',', 1]

O1-x
###Transport and superconducting properties of Fe-based superconductors: SmFeAs(O1-x Fx) versus Fe1+y (Te1-x, Sex)|M. Tropeano,I. Pallecchi,M. R. Cimberle,C. Ferdeghini,G. Lamura,M. Vignolo,A. Martinelli,A. Palenzona,M. Putti###
(1838015, 1838018)
 In the case of the SmFeAs(O1-xFx) series,we find that a single band description allows to extract an approximatedestimation of band parameters such as carrier density and mobility fromexperimental data, although the behaviour of Seebeck effect as a function ofdoping demonstrates that a multiband description would be more appropriate.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[33.0, 2, ',', 1]

Fe1
###Transport and superconducting properties of Fe-based superconductors: SmFeAs(O1-x Fx) versus Fe1+y (Te1-x, Sex)|M. Tropeano,I. Pallecchi,M. R. Cimberle,C. Ferdeghini,G. Lamura,M. Vignolo,A. Martinelli,A. Palenzona,M. Putti###
(1838137, 1838138)
 Onthe contrary, experimental data of the Fe1y<missing VAR>(Te1-x,Sex) series exhibit astrongly compensated behaviour, which can be described only within a multibandmodel.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 2, ',', 2]

Te1-x
###Transport and superconducting properties of Fe-based superconductors: SmFeAs(O1-x Fx) versus Fe1+y (Te1-x, Sex)|M. Tropeano,I. Pallecchi,M. R. Cimberle,C. Ferdeghini,G. Lamura,M. Vignolo,A. Martinelli,A. Palenzona,M. Putti###
(1838141, 1838144)
 Onthe contrary, experimental data of the Fe1y<missing VAR>(Te1-x,Sex) series exhibit astrongly compensated behaviour, which can be described only within a multibandmodel.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[159.0, 2, ',', 2]

In
###Transport and superconducting properties of Fe-based superconductors: SmFeAs(O1-x Fx) versus Fe1+y (Te1-x, Sex)|M. Tropeano,I. Pallecchi,M. R. Cimberle,C. Ferdeghini,G. Lamura,M. Vignolo,A. Martinelli,A. Palenzona,M. Putti###
(1838183, 1838183)
 In the Fe1y<missing VAR>(Te1-x,Sex) series, the role of the excess Fe, tuned by Sestoichiometry, is found to be twofold it dopes electrons in the system and itintroduces localized magnetic moments, responsible for Kondo like scatteringand likely pair-breaking of Cooper pairs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[201.0, 2, ',', 3]

Fe1
###Transport and superconducting properties of Fe-based superconductors: SmFeAs(O1-x Fx) versus Fe1+y (Te1-x, Sex)|M. Tropeano,I. Pallecchi,M. R. Cimberle,C. Ferdeghini,G. Lamura,M. Vignolo,A. Martinelli,A. Palenzona,M. Putti###
(1838187, 1838188)
 In the Fe1y<missing VAR>(Te1-x,Sex) series, the role of the excess Fe, tuned by Sestoichiometry, is found to be twofold it dopes electrons in the system and itintroduces localized magnetic moments, responsible for Kondo like scatteringand likely pair-breaking of Cooper pairs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, 2, ',', 3]

Te1-x
###Transport and superconducting properties of Fe-based superconductors: SmFeAs(O1-x Fx) versus Fe1+y (Te1-x, Sex)|M. Tropeano,I. Pallecchi,M. R. Cimberle,C. Ferdeghini,G. Lamura,M. Vignolo,A. Martinelli,A. Palenzona,M. Putti###
(1838191, 1838194)
 In the Fe1y<missing VAR>(Te1-x,Sex) series, the role of the excess Fe, tuned by Sestoichiometry, is found to be twofold it dopes electrons in the system and itintroduces localized magnetic moments, responsible for Kondo like scatteringand likely pair-breaking of Cooper pairs.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[209.0, 2, ',', 3]

Fe
###Transport and superconducting properties of Fe-based superconductors: SmFeAs(O1-x Fx) versus Fe1+y (Te1-x, Sex)|M. Tropeano,I. Pallecchi,M. R. Cimberle,C. Ferdeghini,G. Lamura,M. Vignolo,A. Martinelli,A. Palenzona,M. Putti###
(1838212, 1838212)
 In the Fe1y<missing VAR>(Te1-x,Sex) series, the role of the excess Fe, tuned by Sestoichiometry, is found to be twofold it dopes electrons in the system and itintroduces localized magnetic moments, responsible for Kondo like scatteringand likely pair-breaking of Cooper pairs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[230.0, 2, ',', 3]

Se
###Transport and superconducting properties of Fe-based superconductors: SmFeAs(O1-x Fx) versus Fe1+y (Te1-x, Sex)|M. Tropeano,I. Pallecchi,M. R. Cimberle,C. Ferdeghini,G. Lamura,M. Vignolo,A. Martinelli,A. Palenzona,M. Putti###
(1838219, 1838219)
 In the Fe1y<missing VAR>(Te1-x,Sex) series, the role of the excess Fe, tuned by Sestoichiometry, is found to be twofold it dopes electrons in the system and itintroduces localized magnetic moments, responsible for Kondo like scatteringand likely pair-breaking of Cooper pairs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[237.0, 2, ',', 3]

Fe
###Transport and superconducting properties of Fe-based superconductors: SmFeAs(O1-x Fx) versus Fe1+y (Te1-x, Sex)|M. Tropeano,I. Pallecchi,M. R. Cimberle,C. Ferdeghini,G. Lamura,M. Vignolo,A. Martinelli,A. Palenzona,M. Putti###
(1838292, 1838292)
 Hence, excess Fe plays a crucial rolealso in determining superconducting properties such as the Tc and the uppercritical field Bc2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[310.0, 2, ',', 4]

Tc
###Transport and superconducting properties of Fe-based superconductors: SmFeAs(O1-x Fx) versus Fe1+y (Te1-x, Sex)|M. Tropeano,I. Pallecchi,M. R. Cimberle,C. Ferdeghini,G. Lamura,M. Vignolo,A. Martinelli,A. Palenzona,M. Putti###
(1838319, 1838319)
 Hence, excess Fe plays a crucial rolealso in determining superconducting properties such as the Tc and the uppercritical field Bc2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[337.0, 2, ',', 4]

Fe1
###Transport and superconducting properties of Fe-based superconductors: SmFeAs(O1-x Fx) versus Fe1+y (Te1-x, Sex)|M. Tropeano,I. Pallecchi,M. R. Cimberle,C. Ferdeghini,G. Lamura,M. Vignolo,A. Martinelli,A. Palenzona,M. Putti###
(1838349, 1838350)
 The huge Bc2 values of the Fe1y<missing VAR>(Te1-x,Sex) samples aredescribed by a dirty limit law, opposed to the clean limit behaviour of theSmFeAs(O1-xFx) samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[367.0, 2, ',', 5]

Te1-x
###Transport and superconducting properties of Fe-based superconductors: SmFeAs(O1-x Fx) versus Fe1+y (Te1-x, Sex)|M. Tropeano,I. Pallecchi,M. R. Cimberle,C. Ferdeghini,G. Lamura,M. Vignolo,A. Martinelli,A. Palenzona,M. Putti###
(1838353, 1838356)
 The huge Bc2 values of the Fe1y<missing VAR>(Te1-x,Sex) samples aredescribed by a dirty limit law, opposed to the clean limit behaviour of theSmFeAs(O1-xFx) samples.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[371.0, 2, ',', 5]

As
###Transport and superconducting properties of Fe-based superconductors: SmFeAs(O1-x Fx) versus Fe1+y (Te1-x, Sex)|M. Tropeano,I. Pallecchi,M. R. Cimberle,C. Ferdeghini,G. Lamura,M. Vignolo,A. Martinelli,A. Palenzona,M. Putti###
(1838398, 1838398)
 The huge Bc2 values of the Fe1y<missing VAR>(Te1-x,Sex) samples aredescribed by a dirty limit law, opposed to the clean limit behaviour of theSmFeAs(O1-xFx) samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[416.0, 2, ',', 5]

O1-x
###Transport and superconducting properties of Fe-based superconductors: SmFeAs(O1-x Fx) versus Fe1+y (Te1-x, Sex)|M. Tropeano,I. Pallecchi,M. R. Cimberle,C. Ferdeghini,G. Lamura,M. Vignolo,A. Martinelli,A. Palenzona,M. Putti###
(1838400, 1838403)
 The huge Bc2 values of the Fe1y<missing VAR>(Te1-x,Sex) samples aredescribed by a dirty limit law, opposed to the clean limit behaviour of theSmFeAs(O1-xFx) samples.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[418.0, 2, ',', 5]

Fe
###Transport and superconducting properties of Fe-based superconductors: SmFeAs(O1-x Fx) versus Fe1+y (Te1-x, Sex)|M. Tropeano,I. Pallecchi,M. R. Cimberle,C. Ferdeghini,G. Lamura,M. Vignolo,A. Martinelli,A. Palenzona,M. Putti###
(1838421, 1838421)
 Hence, magnetic scattering by excess Fe seems to drivethe system in the dirty regime, but its detrimental pairbreaking role seems notto be as severe as predicted by theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[439.0, 2, ',', 6]

Fe1-xCo
###Kondo effect and absence of quantum interference effects in the charge transport of cobalt doped iron pyrite|S. Guo,D. P. Young,R. T. Macaluso,D. A. Browne,N. L. Henderson,J. Y. Chan,L. L. Henry,J. F. DiTusa###
(1838583, 1838587)
 The Hall effect and resistivity of the carrier doped magnetic semiconductorFe1-xCox<missing VAR>S2 were measured for 0le x<missing VAR> le 0.16, temperatures between0.05 and 300 K, and fields of up to 9 T.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[18.0, 0.16, ',', 0],[29.0, 300, 'K', 0],[41.0, 9, 'T', 0],[68.0, 10, 'to', 1],[70.0, 30, '%', 1],[153.0, 0.5, 'K', 2],[236.0, 15, ',', 3],[338.0, 0.5, 'K', 5],[453.0, 35, '%', 6],[457.0, 5, 'T', 6],[493.0, 2, 'for', 7]

S2
###Kondo effect and absence of quantum interference effects in the charge transport of cobalt doped iron pyrite|S. Guo,D. P. Young,R. T. Macaluso,D. A. Browne,N. L. Henderson,J. Y. Chan,L. L. Henry,J. F. DiTusa###
(1838589, 1838590)
 The Hall effect and resistivity of the carrier doped magnetic semiconductorFe1-xCox<missing VAR>S2 were measured for 0le x<missing VAR> le 0.16, temperatures between0.05 and 300 K, and fields of up to 9 T.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 0.16, ',', 0],[26.0, 300, 'K', 0],[38.0, 9, 'T', 0],[65.0, 10, 'to', 1],[67.0, 30, '%', 1],[150.0, 0.5, 'K', 2],[233.0, 15, ',', 3],[335.0, 0.5, 'K', 5],[450.0, 35, '%', 6],[454.0, 5, 'T', 6],[490.0, 2, 'for', 7]

Co
###Kondo effect and absence of quantum interference effects in the charge transport of cobalt doped iron pyrite|S. Guo,D. P. Young,R. T. Macaluso,D. A. Browne,N. L. Henderson,J. Y. Chan,L. L. Henry,J. F. DiTusa###
(1838664, 1838664)
 Our Hall data indicate electron chargecarriers with a density of only 10 to 30% of the Co density of our crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 0.16, ',', 1],[48.0, 300, 'K', 1],[36.0, 9, 'T', 1],[9.0, 10, 'to', 0],[7.0, 30, '%', 0],[76.0, 0.5, 'K', 1],[159.0, 15, ',', 2],[261.0, 0.5, 'K', 4],[376.0, 35, '%', 5],[380.0, 5, 'T', 5],[416.0, 2, 'for', 6]

F
###Kondo effect and absence of quantum interference effects in the charge transport of cobalt doped iron pyrite|S. Guo,D. P. Young,R. T. Macaluso,D. A. Browne,N. L. Henderson,J. Y. Chan,L. L. Henry,J. F. DiTusa###
(1838818, 1838818)
 We also observe no indication of quantumcorrections to the conductivity despite the small values of the product of theFermi wave vector and the mean-free-path, 1.5 le k<missing VAR>Fell le 15, over therange of x<missing VAR> investigated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[213.0, 0.16, ',', 3],[202.0, 300, 'K', 3],[190.0, 9, 'T', 3],[163.0, 10, 'to', 2],[161.0, 30, '%', 2],[78.0, 0.5, 'K', 1],[5.0, 15, ',', 0],[107.0, 0.5, 'K', 2],[222.0, 35, '%', 3],[226.0, 5, 'T', 3],[262.0, 2, 'for', 4]

F
###Room-temperature antiferromagnetic memory resistor|X. Marti,I. Fina,C. Frontera,Jian Liu,P. Wadley,Q. He,R. J. Paull,J. D. Clarkson,J. Kudrnovský,I. Turek,J. Kuneš,D. Yi,J. -H. Chu,C. T. Nelson,L. You,E. Arenholz,S. Salahuddin,J. Fontcuberta,T. Jungwirth,R. Ramesh###
(1839202, 1839202)
 The bistability of ordered spin states in ferromagnets (FMs) provides themagnetic memory functionality.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[304.0, 100, 'degrees', 5],[471.0, 150, 'years', 8]

F
###Room-temperature antiferromagnetic memory resistor|X. Marti,I. Fina,C. Frontera,Jian Liu,P. Wadley,Q. He,R. J. Paull,J. D. Clarkson,J. Kudrnovský,I. Turek,J. Kuneš,D. Yi,J. -H. Chu,C. T. Nelson,L. You,E. Arenholz,S. Salahuddin,J. Fontcuberta,T. Jungwirth,R. Ramesh###
(1839236, 1839236)
 Traditionally, the macroscopic moment of orderedspins in FMs is utilized to write information on magnetic media by a weakexternal magnetic field, and the FM<missing VAR> stray field is used for reading.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[270.0, 100, 'degrees', 4],[437.0, 150, 'years', 7]

F
###Room-temperature antiferromagnetic memory resistor|X. Marti,I. Fina,C. Frontera,Jian Liu,P. Wadley,Q. He,R. J. Paull,J. D. Clarkson,J. Kudrnovský,I. Turek,J. Kuneš,D. Yi,J. -H. Chu,C. T. Nelson,L. You,E. Arenholz,S. Salahuddin,J. Fontcuberta,T. Jungwirth,R. Ramesh###
(1839273, 1839273)
 Traditionally, the macroscopic moment of orderedspins in FMs is utilized to write information on magnetic media by a weakexternal magnetic field, and the FM<missing VAR> stray field is used for reading.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[233.0, 100, 'degrees', 4],[400.0, 150, 'years', 7]

F
###Room-temperature antiferromagnetic memory resistor|X. Marti,I. Fina,C. Frontera,Jian Liu,P. Wadley,Q. He,R. J. Paull,J. D. Clarkson,J. Kudrnovský,I. Turek,J. Kuneš,D. Yi,J. -H. Chu,C. T. Nelson,L. You,E. Arenholz,S. Salahuddin,J. Fontcuberta,T. Jungwirth,R. Ramesh###
(1839365, 1839365)
 This concept may eventually leave the sensitivity ofFMs to magnetic fields as a mere weakness for retention and the FM<missing VAR> stray fieldsas a mere obstacle for high-density memory integration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 100, 'degrees', 2],[308.0, 150, 'years', 5]

F
###Room-temperature antiferromagnetic memory resistor|X. Marti,I. Fina,C. Frontera,Jian Liu,P. Wadley,Q. He,R. J. Paull,J. D. Clarkson,J. Kudrnovský,I. Turek,J. Kuneš,D. Yi,J. -H. Chu,C. T. Nelson,L. You,E. Arenholz,S. Salahuddin,J. Fontcuberta,T. Jungwirth,R. Ramesh###
(1839390, 1839390)
 This concept may eventually leave the sensitivity ofFMs to magnetic fields as a mere weakness for retention and the FM<missing VAR> stray fieldsas a mere obstacle for high-density memory integration.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 100, 'degrees', 2],[283.0, 150, 'years', 5]

In
###Room-temperature antiferromagnetic memory resistor|X. Marti,I. Fina,C. Frontera,Jian Liu,P. Wadley,Q. He,R. J. Paull,J. D. Clarkson,J. Kudrnovský,I. Turek,J. Kuneš,D. Yi,J. -H. Chu,C. T. Nelson,L. You,E. Arenholz,S. Salahuddin,J. Fontcuberta,T. Jungwirth,R. Ramesh###
(1839417, 1839417)
 In this paper we reporta room-temperature bistable antiferromagnetic (AFM) memory which producesnegligible stray fields and is inert in strong magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 100, 'degrees', 1],[256.0, 150, 'years', 4]

F
###Room-temperature antiferromagnetic memory resistor|X. Marti,I. Fina,C. Frontera,Jian Liu,P. Wadley,Q. He,R. J. Paull,J. D. Clarkson,J. Kudrnovský,I. Turek,J. Kuneš,D. Yi,J. -H. Chu,C. T. Nelson,L. You,E. Arenholz,S. Salahuddin,J. Fontcuberta,T. Jungwirth,R. Ramesh###
(1839440, 1839440)
 In this paper we reporta room-temperature bistable antiferromagnetic (AFM) memory which producesnegligible stray fields and is inert in strong magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 100, 'degrees', 1],[233.0, 150, 'years', 4]

FeRh
###Room-temperature antiferromagnetic memory resistor|X. Marti,I. Fina,C. Frontera,Jian Liu,P. Wadley,Q. He,R. J. Paull,J. D. Clarkson,J. Kudrnovský,I. Turek,J. Kuneš,D. Yi,J. -H. Chu,C. T. Nelson,L. You,E. Arenholz,S. Salahuddin,J. Fontcuberta,T. Jungwirth,R. Ramesh###
(1839487, 1839488)
 We use aresistor made of an FeRh AFM<missing VAR> whose transition to a FM<missing VAR> order 100 degrees aboveroom-temperature, allows us to magnetically set different collective directionsof Fe moments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 100, 'degrees', 0],[185.0, 150, 'years', 3]

F
###Room-temperature antiferromagnetic memory resistor|X. Marti,I. Fina,C. Frontera,Jian Liu,P. Wadley,Q. He,R. J. Paull,J. D. Clarkson,J. Kudrnovský,I. Turek,J. Kuneš,D. Yi,J. -H. Chu,C. T. Nelson,L. You,E. Arenholz,S. Salahuddin,J. Fontcuberta,T. Jungwirth,R. Ramesh###
(1839491, 1839491)
 We use aresistor made of an FeRh AFM<missing VAR> whose transition to a FM<missing VAR> order 100 degrees aboveroom-temperature, allows us to magnetically set different collective directionsof Fe moments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 100, 'degrees', 0],[182.0, 150, 'years', 3]

F
###Room-temperature antiferromagnetic memory resistor|X. Marti,I. Fina,C. Frontera,Jian Liu,P. Wadley,Q. He,R. J. Paull,J. D. Clarkson,J. Kudrnovský,I. Turek,J. Kuneš,D. Yi,J. -H. Chu,C. T. Nelson,L. You,E. Arenholz,S. Salahuddin,J. Fontcuberta,T. Jungwirth,R. Ramesh###
(1839502, 1839502)
 We use aresistor made of an FeRh AFM<missing VAR> whose transition to a FM<missing VAR> order 100 degrees aboveroom-temperature, allows us to magnetically set different collective directionsof Fe moments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[4.0, 100, 'degrees', 0],[171.0, 150, 'years', 3]

Fe
###Room-temperature antiferromagnetic memory resistor|X. Marti,I. Fina,C. Frontera,Jian Liu,P. Wadley,Q. He,R. J. Paull,J. D. Clarkson,J. Kudrnovský,I. Turek,J. Kuneš,D. Yi,J. -H. Chu,C. T. Nelson,L. You,E. Arenholz,S. Salahuddin,J. Fontcuberta,T. Jungwirth,R. Ramesh###
(1839535, 1839535)
 We use aresistor made of an FeRh AFM<missing VAR> whose transition to a FM<missing VAR> order 100 degrees aboveroom-temperature, allows us to magnetically set different collective directionsof Fe moments.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[29.0, 100, 'degrees', 0],[138.0, 150, 'years', 3]

F
###Room-temperature antiferromagnetic memory resistor|X. Marti,I. Fina,C. Frontera,Jian Liu,P. Wadley,Q. He,R. J. Paull,J. D. Clarkson,J. Kudrnovský,I. Turek,J. Kuneš,D. Yi,J. -H. Chu,C. T. Nelson,L. You,E. Arenholz,S. Salahuddin,J. Fontcuberta,T. Jungwirth,R. Ramesh###
(1839554, 1839554)
 Upon cooling to room-temperature, the AFM<missing VAR> order sets in with thedirection the AFM<missing VAR> moments pre-determined by the field and moment direction inthe high temperature FM<missing VAR> state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 100, 'degrees', 1],[119.0, 150, 'years', 2]

F
###Room-temperature antiferromagnetic memory resistor|X. Marti,I. Fina,C. Frontera,Jian Liu,P. Wadley,Q. He,R. J. Paull,J. D. Clarkson,J. Kudrnovský,I. Turek,J. Kuneš,D. Yi,J. -H. Chu,C. T. Nelson,L. You,E. Arenholz,S. Salahuddin,J. Fontcuberta,T. Jungwirth,R. Ramesh###
(1839573, 1839573)
 Upon cooling to room-temperature, the AFM<missing VAR> order sets in with thedirection the AFM<missing VAR> moments pre-determined by the field and moment direction inthe high temperature FM<missing VAR> state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[67.0, 100, 'degrees', 1],[100.0, 150, 'years', 2]

F
###Room-temperature antiferromagnetic memory resistor|X. Marti,I. Fina,C. Frontera,Jian Liu,P. Wadley,Q. He,R. J. Paull,J. D. Clarkson,J. Kudrnovský,I. Turek,J. Kuneš,D. Yi,J. -H. Chu,C. T. Nelson,L. You,E. Arenholz,S. Salahuddin,J. Fontcuberta,T. Jungwirth,R. Ramesh###
(1839603, 1839603)
 Upon cooling to room-temperature, the AFM<missing VAR> order sets in with thedirection the AFM<missing VAR> moments pre-determined by the field and moment direction inthe high temperature FM<missing VAR> state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 100, 'degrees', 1],[70.0, 150, 'years', 2]

F
###Room-temperature antiferromagnetic memory resistor|X. Marti,I. Fina,C. Frontera,Jian Liu,P. Wadley,Q. He,R. J. Paull,J. D. Clarkson,J. Kudrnovský,I. Turek,J. Kuneš,D. Yi,J. -H. Chu,C. T. Nelson,L. You,E. Arenholz,S. Salahuddin,J. Fontcuberta,T. Jungwirth,R. Ramesh###
(1839679, 1839679)
 Wereport microscopic theory modeling which confirms that this archetypicalspintronic effect discovered more than 150 years ago in FMs, can be equallypresent in AFMs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[173.0, 100, 'degrees', 3],[6.0, 150, 'years', 0]

F
###Room-temperature antiferromagnetic memory resistor|X. Marti,I. Fina,C. Frontera,Jian Liu,P. Wadley,Q. He,R. J. Paull,J. D. Clarkson,J. Kudrnovský,I. Turek,J. Kuneš,D. Yi,J. -H. Chu,C. T. Nelson,L. You,E. Arenholz,S. Salahuddin,J. Fontcuberta,T. Jungwirth,R. Ramesh###
(1839695, 1839695)
 Wereport microscopic theory modeling which confirms that this archetypicalspintronic effect discovered more than 150 years ago in FMs, can be equallypresent in AFMs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[189.0, 100, 'degrees', 3],[22.0, 150, 'years', 0]

F
###Room-temperature antiferromagnetic memory resistor|X. Marti,I. Fina,C. Frontera,Jian Liu,P. Wadley,Q. He,R. J. Paull,J. D. Clarkson,J. Kudrnovský,I. Turek,J. Kuneš,D. Yi,J. -H. Chu,C. T. Nelson,L. You,E. Arenholz,S. Salahuddin,J. Fontcuberta,T. Jungwirth,R. Ramesh###
(1839725, 1839725)
 Our work demonstrates the feasibility to realizeroom-temperature spintronic memories with AFMs which greatly expands themagnetic materials base for these devices and offers properties which areunparalleled in FMs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[219.0, 100, 'degrees', 4],[52.0, 150, 'years', 1]

F
###Room-temperature antiferromagnetic memory resistor|X. Marti,I. Fina,C. Frontera,Jian Liu,P. Wadley,Q. He,R. J. Paull,J. D. Clarkson,J. Kudrnovský,I. Turek,J. Kuneš,D. Yi,J. -H. Chu,C. T. Nelson,L. You,E. Arenholz,S. Salahuddin,J. Fontcuberta,T. Jungwirth,R. Ramesh###
(1839764, 1839764)
 Our work demonstrates the feasibility to realizeroom-temperature spintronic memories with AFMs which greatly expands themagnetic materials base for these devices and offers properties which areunparalleled in FMs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[258.0, 100, 'degrees', 4],[91.0, 150, 'years', 1]

F
###Using rf voltage induced ferromagnetic resonance to study the spin-wave density of states and the Gilbert damping in perpendicularly magnetized disks|T. Devolder###
(1839850, 1839850)
 We study how the shape of the spinwave resonance lines in rf-voltage inducedFMR can be used to extract the spinwave density of states and the dampingwithin the precessing layer in nanoscale tunnel junctions that possessperpendicular anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[492.0, 200, 'nm', 7],[508.0, 90, 'nm', 8],[546.0, 0.008, 'measured', 9]

F
###Using rf voltage induced ferromagnetic resonance to study the spin-wave density of states and the Gilbert damping in perpendicularly magnetized disks|T. Devolder###
(1840286, 1840286)
 The transverse and longitudinal susceptibilitysignals have different lineshapes; their joint studies can yield the Gilbertdamping of the free layer of the device with a degree of confidence thatcompares well with standard FMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[56.0, 200, 'nm', 1],[72.0, 90, 'nm', 2],[110.0, 0.008, 'measured', 3]

FeCoB
###Using rf voltage induced ferromagnetic resonance to study the spin-wave density of states and the Gilbert damping in perpendicularly magnetized disks|T. Devolder###
(1840301, 1840303)
 Our method is illustrated on FeCoB-based freelayers in which the individual spin-waves can be sufficiently resolved only fordisk diameters below 200 nm.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 200, 'nm', 0],[55.0, 90, 'nm', 1],[93.0, 0.008, 'measured', 2]

W
###Heterointerface effects in the electro-intercalation of van der Waals heterostructures|D. Kwabena Bediako,Mehdi Rezaee,Hyobin Yoo,Daniel T. Larson,Shu Yang Frank Zhao,Takashi Taniguchi,Kenji Watanabe,Tina L. Brower-Thomas,Efthimios Kaxiras,Philip Kim###
(1840521, 1840521)
 Layered van der Waals (vdW) crystals exemplify a diverse family ofmaterials that permit ions to reversibly associate with a host atomic latticeby intercalation into interlamellar gaps.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[281.0, 2, ';', 5],[472.0, 0.5, 'V', 6],[538.0, 2, 'D', 7]

W
###Heterointerface effects in the electro-intercalation of van der Waals heterostructures|D. Kwabena Bediako,Mehdi Rezaee,Hyobin Yoo,Daniel T. Larson,Shu Yang Frank Zhao,Takashi Taniguchi,Kenji Watanabe,Tina L. Brower-Thomas,Efthimios Kaxiras,Philip Kim###
(1840656, 1840656)
 Previous studies of vdW hybridsrepresented ensemble measurements at macroscopic films/powders, which do notpermit the isolation and investigation of the chemistry at individual2-dimensional (2D) interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[146.0, 2, ';', 2],[337.0, 0.5, 'V', 3],[403.0, 2, 'D', 4]

W
###Heterointerface effects in the electro-intercalation of van der Waals heterostructures|D. Kwabena Bediako,Mehdi Rezaee,Hyobin Yoo,Daniel T. Larson,Shu Yang Frank Zhao,Takashi Taniguchi,Kenji Watanabe,Tina L. Brower-Thomas,Efthimios Kaxiras,Philip Kim###
(1840751, 1840751)
 Here, we demonstrate the intercalation oflithium at the level of individual atomic interfaces of dissimilar vdW layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 2, ';', 1],[242.0, 0.5, 'V', 2],[308.0, 2, 'D', 3]

W
###Heterointerface effects in the electro-intercalation of van der Waals heterostructures|D. Kwabena Bediako,Mehdi Rezaee,Hyobin Yoo,Daniel T. Larson,Shu Yang Frank Zhao,Takashi Taniguchi,Kenji Watanabe,Tina L. Brower-Thomas,Efthimios Kaxiras,Philip Kim###
(1840766, 1840766)
Electrochemical devices based on vdW heterostructures comprised ofdeterministically stacked hexagonal boron nitride, graphene (G) and molybdenumdichalcogenide (MoX<missing VAR>2; X<missing VAR>  S, Se) layers are fabricated, enabling the directresolution of intermediate stages in the intercalation of discreteheterointerfaces and the extent of charge transfer to individual layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 2, ';', 0],[227.0, 0.5, 'V', 1],[293.0, 2, 'D', 2]

Mo
###Heterointerface effects in the electro-intercalation of van der Waals heterostructures|D. Kwabena Bediako,Mehdi Rezaee,Hyobin Yoo,Daniel T. Larson,Shu Yang Frank Zhao,Takashi Taniguchi,Kenji Watanabe,Tina L. Brower-Thomas,Efthimios Kaxiras,Philip Kim###
(1840800, 1840800)
Electrochemical devices based on vdW heterostructures comprised ofdeterministically stacked hexagonal boron nitride, graphene (G) and molybdenumdichalcogenide (MoX<missing VAR>2; X<missing VAR>  S, Se) layers are fabricated, enabling the directresolution of intermediate stages in the intercalation of discreteheterointerfaces and the extent of charge transfer to individual layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 2, ';', 0],[193.0, 0.5, 'V', 1],[259.0, 2, 'D', 2]

S
###Heterointerface effects in the electro-intercalation of van der Waals heterostructures|D. Kwabena Bediako,Mehdi Rezaee,Hyobin Yoo,Daniel T. Larson,Shu Yang Frank Zhao,Takashi Taniguchi,Kenji Watanabe,Tina L. Brower-Thomas,Efthimios Kaxiras,Philip Kim###
(1840808, 1840808)
Electrochemical devices based on vdW heterostructures comprised ofdeterministically stacked hexagonal boron nitride, graphene (G) and molybdenumdichalcogenide (MoX<missing VAR>2; X<missing VAR>  S, Se) layers are fabricated, enabling the directresolution of intermediate stages in the intercalation of discreteheterointerfaces and the extent of charge transfer to individual layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 2, ';', 0],[185.0, 0.5, 'V', 1],[251.0, 2, 'D', 2]

Se
###Heterointerface effects in the electro-intercalation of van der Waals heterostructures|D. Kwabena Bediako,Mehdi Rezaee,Hyobin Yoo,Daniel T. Larson,Shu Yang Frank Zhao,Takashi Taniguchi,Kenji Watanabe,Tina L. Brower-Thomas,Efthimios Kaxiras,Philip Kim###
(1840811, 1840811)
Electrochemical devices based on vdW heterostructures comprised ofdeterministically stacked hexagonal boron nitride, graphene (G) and molybdenumdichalcogenide (MoX<missing VAR>2; X<missing VAR>  S, Se) layers are fabricated, enabling the directresolution of intermediate stages in the intercalation of discreteheterointerfaces and the extent of charge transfer to individual layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 2, ';', 0],[182.0, 0.5, 'V', 1],[248.0, 2, 'D', 2]

W
###Heterointerface effects in the electro-intercalation of van der Waals heterostructures|D. Kwabena Bediako,Mehdi Rezaee,Hyobin Yoo,Daniel T. Larson,Shu Yang Frank Zhao,Takashi Taniguchi,Kenji Watanabe,Tina L. Brower-Thomas,Efthimios Kaxiras,Philip Kim###
(1840910, 1840910)
Operando magnetoresistance and optical spectroscopy coupled withlow-temperature quantum magneto-oscillation measurements show that the creationof intimate vdW heterointerfaces between G<missing VAR> and MoX<missing VAR>2 engenders over 10-foldaccumulation of charge in MoX<missing VAR>2 compared to MoX<missing VAR>2/MoX<missing VAR>2 homointerfaces, whileenforcing a more negative intercalation potential than that of bulk MoX<missing VAR>2 by atleast 0.5 V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 2, ';', 1],[83.0, 0.5, 'V', 0],[149.0, 2, 'D', 1]

Mo
###Heterointerface effects in the electro-intercalation of van der Waals heterostructures|D. Kwabena Bediako,Mehdi Rezaee,Hyobin Yoo,Daniel T. Larson,Shu Yang Frank Zhao,Takashi Taniguchi,Kenji Watanabe,Tina L. Brower-Thomas,Efthimios Kaxiras,Philip Kim###
(1840920, 1840920)
Operando magnetoresistance and optical spectroscopy coupled withlow-temperature quantum magneto-oscillation measurements show that the creationof intimate vdW heterointerfaces between G<missing VAR> and MoX<missing VAR>2 engenders over 10-foldaccumulation of charge in MoX<missing VAR>2 compared to MoX<missing VAR>2/MoX<missing VAR>2 homointerfaces, whileenforcing a more negative intercalation potential than that of bulk MoX<missing VAR>2 by atleast 0.5 V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 2, ';', 1],[73.0, 0.5, 'V', 0],[139.0, 2, 'D', 1]

Mo
###Heterointerface effects in the electro-intercalation of van der Waals heterostructures|D. Kwabena Bediako,Mehdi Rezaee,Hyobin Yoo,Daniel T. Larson,Shu Yang Frank Zhao,Takashi Taniguchi,Kenji Watanabe,Tina L. Brower-Thomas,Efthimios Kaxiras,Philip Kim###
(1840941, 1840941)
Operando magnetoresistance and optical spectroscopy coupled withlow-temperature quantum magneto-oscillation measurements show that the creationof intimate vdW heterointerfaces between G<missing VAR> and MoX<missing VAR>2 engenders over 10-foldaccumulation of charge in MoX<missing VAR>2 compared to MoX<missing VAR>2/MoX<missing VAR>2 homointerfaces, whileenforcing a more negative intercalation potential than that of bulk MoX<missing VAR>2 by atleast 0.5 V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 2, ';', 1],[52.0, 0.5, 'V', 0],[118.0, 2, 'D', 1]

Mo
###Heterointerface effects in the electro-intercalation of van der Waals heterostructures|D. Kwabena Bediako,Mehdi Rezaee,Hyobin Yoo,Daniel T. Larson,Shu Yang Frank Zhao,Takashi Taniguchi,Kenji Watanabe,Tina L. Brower-Thomas,Efthimios Kaxiras,Philip Kim###
(1840949, 1840949)
Operando magnetoresistance and optical spectroscopy coupled withlow-temperature quantum magneto-oscillation measurements show that the creationof intimate vdW heterointerfaces between G<missing VAR> and MoX<missing VAR>2 engenders over 10-foldaccumulation of charge in MoX<missing VAR>2 compared to MoX<missing VAR>2/MoX<missing VAR>2 homointerfaces, whileenforcing a more negative intercalation potential than that of bulk MoX<missing VAR>2 by atleast 0.5 V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 2, ';', 1],[44.0, 0.5, 'V', 0],[110.0, 2, 'D', 1]

Mo
###Heterointerface effects in the electro-intercalation of van der Waals heterostructures|D. Kwabena Bediako,Mehdi Rezaee,Hyobin Yoo,Daniel T. Larson,Shu Yang Frank Zhao,Takashi Taniguchi,Kenji Watanabe,Tina L. Brower-Thomas,Efthimios Kaxiras,Philip Kim###
(1840953, 1840953)
Operando magnetoresistance and optical spectroscopy coupled withlow-temperature quantum magneto-oscillation measurements show that the creationof intimate vdW heterointerfaces between G<missing VAR> and MoX<missing VAR>2 engenders over 10-foldaccumulation of charge in MoX<missing VAR>2 compared to MoX<missing VAR>2/MoX<missing VAR>2 homointerfaces, whileenforcing a more negative intercalation potential than that of bulk MoX<missing VAR>2 by atleast 0.5 V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[151.0, 2, ';', 1],[40.0, 0.5, 'V', 0],[106.0, 2, 'D', 1]

Mo
###Heterointerface effects in the electro-intercalation of van der Waals heterostructures|D. Kwabena Bediako,Mehdi Rezaee,Hyobin Yoo,Daniel T. Larson,Shu Yang Frank Zhao,Takashi Taniguchi,Kenji Watanabe,Tina L. Brower-Thomas,Efthimios Kaxiras,Philip Kim###
(1840983, 1840983)
Operando magnetoresistance and optical spectroscopy coupled withlow-temperature quantum magneto-oscillation measurements show that the creationof intimate vdW heterointerfaces between G<missing VAR> and MoX<missing VAR>2 engenders over 10-foldaccumulation of charge in MoX<missing VAR>2 compared to MoX<missing VAR>2/MoX<missing VAR>2 homointerfaces, whileenforcing a more negative intercalation potential than that of bulk MoX<missing VAR>2 by atleast 0.5 V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 2, ';', 1],[10.0, 0.5, 'V', 0],[76.0, 2, 'D', 1]

CoTi1-xFe
###Growth, electrical, structural, and magnetic properties of half-Heusler CoTi$_{1-x}$Fe$_x$Sb|Sean D. Harrington,Anthony D. Rice,Tobias Brown-Heft,Bastien Bonef,Abhishek Sharan,Anthony P. McFadden,John A. Logan,Mihir Pendharkar,Mayer M. Feldman,Ozge Mercan,Andre G. Petukhov,Anderson Janotti,Leyla Çolakerol Arslan,Chris J. Palmstrøm###
(1841098, 1841103)
Growth, electrical, structural, and magnetic properties of half-Heusler CoTi1-xFex<missing VAR>Sb.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[214.0, 0.05, ',', 5],[471.0, -18.5, '%', 10],[476.0, 100, 'kOe', 10]

Sb
###Growth, electrical, structural, and magnetic properties of half-Heusler CoTi$_{1-x}$Fe$_x$Sb|Sean D. Harrington,Anthony D. Rice,Tobias Brown-Heft,Bastien Bonef,Abhishek Sharan,Anthony P. McFadden,John A. Logan,Mihir Pendharkar,Mayer M. Feldman,Ozge Mercan,Andre G. Petukhov,Anderson Janotti,Leyla Çolakerol Arslan,Chris J. Palmstrøm###
(1841105, 1841105)
Growth, electrical, structural, and magnetic properties of half-Heusler CoTi1-xFex<missing VAR>Sb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[212.0, 0.05, ',', 5],[469.0, -18.5, '%', 10],[474.0, 100, 'kOe', 10]

CoTi1-xFe
###Growth, electrical, structural, and magnetic properties of half-Heusler CoTi$_{1-x}$Fe$_x$Sb|Sean D. Harrington,Anthony D. Rice,Tobias Brown-Heft,Bastien Bonef,Abhishek Sharan,Anthony P. McFadden,John A. Logan,Mihir Pendharkar,Mayer M. Feldman,Ozge Mercan,Andre G. Petukhov,Anderson Janotti,Leyla Çolakerol Arslan,Chris J. Palmstrøm###
(1841129, 1841134)
 Epitaxial thin films of the substitutionally alloyed half-Heusler seriesCoTi1-xFex<missing VAR>Sb were grown by molecular beam epitaxy on InAlAs/InP(001)substrates for concentrations 0.0leqx<missing VAR>leq1.0.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[183.0, 0.05, ',', 4],[440.0, -18.5, '%', 9],[445.0, 100, 'kOe', 9]

Sb
###Growth, electrical, structural, and magnetic properties of half-Heusler CoTi$_{1-x}$Fe$_x$Sb|Sean D. Harrington,Anthony D. Rice,Tobias Brown-Heft,Bastien Bonef,Abhishek Sharan,Anthony P. McFadden,John A. Logan,Mihir Pendharkar,Mayer M. Feldman,Ozge Mercan,Andre G. Petukhov,Anderson Janotti,Leyla Çolakerol Arslan,Chris J. Palmstrøm###
(1841136, 1841136)
 Epitaxial thin films of the substitutionally alloyed half-Heusler seriesCoTi1-xFex<missing VAR>Sb were grown by molecular beam epitaxy on InAlAs/InP(001)substrates for concentrations 0.0leqx<missing VAR>leq1.0.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[181.0, 0.05, ',', 4],[438.0, -18.5, '%', 9],[443.0, 100, 'kOe', 9]

Fe
###Growth, electrical, structural, and magnetic properties of half-Heusler CoTi$_{1-x}$Fe$_x$Sb|Sean D. Harrington,Anthony D. Rice,Tobias Brown-Heft,Bastien Bonef,Abhishek Sharan,Anthony P. McFadden,John A. Logan,Mihir Pendharkar,Mayer M. Feldman,Ozge Mercan,Andre G. Petukhov,Anderson Janotti,Leyla Çolakerol Arslan,Chris J. Palmstrøm###
(1841182, 1841182)
 The influence of Fe on thestructural, electronic, and magnetic properties was studied and compared tothat expected from density functional theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[135.0, 0.05, ',', 3],[392.0, -18.5, '%', 8],[397.0, 100, 'kOe', 8]

S
###Growth, electrical, structural, and magnetic properties of half-Heusler CoTi$_{1-x}$Fe$_x$Sb|Sean D. Harrington,Anthony D. Rice,Tobias Brown-Heft,Bastien Bonef,Abhishek Sharan,Anthony P. McFadden,John A. Logan,Mihir Pendharkar,Mayer M. Feldman,Ozge Mercan,Andre G. Petukhov,Anderson Janotti,Leyla Çolakerol Arslan,Chris J. Palmstrøm###
(1841328, 1841328)
 For films withx<missing VAR>geq0.05, ferromagnetism is observed in SQ<missing VAR>UID<missing VAR> magnetometry with a saturationmagnetization that scales linearly with Fe content.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 0.05, ',', 0],[246.0, -18.5, '%', 5],[251.0, 100, 'kOe', 5]

UI
###Growth, electrical, structural, and magnetic properties of half-Heusler CoTi$_{1-x}$Fe$_x$Sb|Sean D. Harrington,Anthony D. Rice,Tobias Brown-Heft,Bastien Bonef,Abhishek Sharan,Anthony P. McFadden,John A. Logan,Mihir Pendharkar,Mayer M. Feldman,Ozge Mercan,Andre G. Petukhov,Anderson Janotti,Leyla Çolakerol Arslan,Chris J. Palmstrøm###
(1841330, 1841331)
 For films withx<missing VAR>geq0.05, ferromagnetism is observed in SQ<missing VAR>UID<missing VAR> magnetometry with a saturationmagnetization that scales linearly with Fe content.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0
[13.0, 0.05, ',', 0],[243.0, -18.5, '%', 5],[248.0, 100, 'kOe', 5]

Fe
###Growth, electrical, structural, and magnetic properties of half-Heusler CoTi$_{1-x}$Fe$_x$Sb|Sean D. Harrington,Anthony D. Rice,Tobias Brown-Heft,Bastien Bonef,Abhishek Sharan,Anthony P. McFadden,John A. Logan,Mihir Pendharkar,Mayer M. Feldman,Ozge Mercan,Andre G. Petukhov,Anderson Janotti,Leyla Çolakerol Arslan,Chris J. Palmstrøm###
(1841353, 1841353)
 For films withx<missing VAR>geq0.05, ferromagnetism is observed in SQ<missing VAR>UID<missing VAR> magnetometry with a saturationmagnetization that scales linearly with Fe content.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 0.05, ',', 0],[221.0, -18.5, '%', 5],[226.0, 100, 'kOe', 5]

Fe
###Growth, electrical, structural, and magnetic properties of half-Heusler CoTi$_{1-x}$Fe$_x$Sb|Sean D. Harrington,Anthony D. Rice,Tobias Brown-Heft,Bastien Bonef,Abhishek Sharan,Anthony P. McFadden,John A. Logan,Mihir Pendharkar,Mayer M. Feldman,Ozge Mercan,Andre G. Petukhov,Anderson Janotti,Leyla Çolakerol Arslan,Chris J. Palmstrøm###
(1841385, 1841385)
 A dramatic decrease in themagnetic moment per formula unit occurs when the Fe is substitutionally alloyedon the Co site indicating a strong dependence on the magnetic moment with siteoccupancy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 0.05, ',', 1],[189.0, -18.5, '%', 4],[194.0, 100, 'kOe', 4]

Co
###Growth, electrical, structural, and magnetic properties of half-Heusler CoTi$_{1-x}$Fe$_x$Sb|Sean D. Harrington,Anthony D. Rice,Tobias Brown-Heft,Bastien Bonef,Abhishek Sharan,Anthony P. McFadden,John A. Logan,Mihir Pendharkar,Mayer M. Feldman,Ozge Mercan,Andre G. Petukhov,Anderson Janotti,Leyla Çolakerol Arslan,Chris J. Palmstrøm###
(1841398, 1841398)
 A dramatic decrease in themagnetic moment per formula unit occurs when the Fe is substitutionally alloyedon the Co site indicating a strong dependence on the magnetic moment with siteoccupancy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 0.05, ',', 1],[176.0, -18.5, '%', 4],[181.0, 100, 'kOe', 4]

Fe
###Growth, electrical, structural, and magnetic properties of half-Heusler CoTi$_{1-x}$Fe$_x$Sb|Sean D. Harrington,Anthony D. Rice,Tobias Brown-Heft,Bastien Bonef,Abhishek Sharan,Anthony P. McFadden,John A. Logan,Mihir Pendharkar,Mayer M. Feldman,Ozge Mercan,Andre G. Petukhov,Anderson Janotti,Leyla Çolakerol Arslan,Chris J. Palmstrøm###
(1841471, 1841471)
 A crossover from both in-plane and out-of-plane magnetic moments toonly in-plane moment occurs for higher concentrations of Fe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 0.05, ',', 2],[103.0, -18.5, '%', 3],[108.0, 100, 'kOe', 3]

Fe
###Growth, electrical, structural, and magnetic properties of half-Heusler CoTi$_{1-x}$Fe$_x$Sb|Sean D. Harrington,Anthony D. Rice,Tobias Brown-Heft,Bastien Bonef,Abhishek Sharan,Anthony P. McFadden,John A. Logan,Mihir Pendharkar,Mayer M. Feldman,Ozge Mercan,Andre G. Petukhov,Anderson Janotti,Leyla Çolakerol Arslan,Chris J. Palmstrøm###
(1841510, 1841510)
 Ferromagneticresonance indicates a transition from weak to strong interaction with areduction in inhomogeneous broadening as Fe content is increased.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[193.0, 0.05, ',', 3],[64.0, -18.5, '%', 2],[69.0, 100, 'kOe', 2]

Fe
###Growth, electrical, structural, and magnetic properties of half-Heusler CoTi$_{1-x}$Fe$_x$Sb|Sean D. Harrington,Anthony D. Rice,Tobias Brown-Heft,Bastien Bonef,Abhishek Sharan,Anthony P. McFadden,John A. Logan,Mihir Pendharkar,Mayer M. Feldman,Ozge Mercan,Andre G. Petukhov,Anderson Janotti,Leyla Çolakerol Arslan,Chris J. Palmstrøm###
(1841596, 1841596)
 Anomalous Hall effect andlarge negative magnetoresistance (up to -18.5% at 100 kOe for x<missing VAR>0.3) areobserved for higher Fe content films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[279.0, 0.05, ',', 5],[22.0, -18.5, '%', 0],[17.0, 100, 'kOe', 0]

Fe
###Growth, electrical, structural, and magnetic properties of half-Heusler CoTi$_{1-x}$Fe$_x$Sb|Sean D. Harrington,Anthony D. Rice,Tobias Brown-Heft,Bastien Bonef,Abhishek Sharan,Anthony P. McFadden,John A. Logan,Mihir Pendharkar,Mayer M. Feldman,Ozge Mercan,Andre G. Petukhov,Anderson Janotti,Leyla Çolakerol Arslan,Chris J. Palmstrøm###
(1841630, 1841630)
 Evidence of superparamagnetism for x<missing VAR>0.3and x<missing VAR>0.2 suggests for moderate levels of Fe, demixing of theCoTi1-xFex<missing VAR>Sb films into Fe rich and Fe deficient regions may bepresent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[313.0, 0.05, ',', 6],[56.0, -18.5, '%', 1],[51.0, 100, 'kOe', 1]

CoTi1-xFe
###Growth, electrical, structural, and magnetic properties of half-Heusler CoTi$_{1-x}$Fe$_x$Sb|Sean D. Harrington,Anthony D. Rice,Tobias Brown-Heft,Bastien Bonef,Abhishek Sharan,Anthony P. McFadden,John A. Logan,Mihir Pendharkar,Mayer M. Feldman,Ozge Mercan,Andre G. Petukhov,Anderson Janotti,Leyla Çolakerol Arslan,Chris J. Palmstrøm###
(1841640, 1841645)
 Evidence of superparamagnetism for x<missing VAR>0.3and x<missing VAR>0.2 suggests for moderate levels of Fe, demixing of theCoTi1-xFex<missing VAR>Sb films into Fe rich and Fe deficient regions may bepresent.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[323.0, 0.05, ',', 6],[66.0, -18.5, '%', 1],[61.0, 100, 'kOe', 1]

Sb
###Growth, electrical, structural, and magnetic properties of half-Heusler CoTi$_{1-x}$Fe$_x$Sb|Sean D. Harrington,Anthony D. Rice,Tobias Brown-Heft,Bastien Bonef,Abhishek Sharan,Anthony P. McFadden,John A. Logan,Mihir Pendharkar,Mayer M. Feldman,Ozge Mercan,Andre G. Petukhov,Anderson Janotti,Leyla Çolakerol Arslan,Chris J. Palmstrøm###
(1841647, 1841647)
 Evidence of superparamagnetism for x<missing VAR>0.3and x<missing VAR>0.2 suggests for moderate levels of Fe, demixing of theCoTi1-xFex<missing VAR>Sb films into Fe rich and Fe deficient regions may bepresent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[330.0, 0.05, ',', 6],[73.0, -18.5, '%', 1],[68.0, 100, 'kOe', 1]

Fe
###Growth, electrical, structural, and magnetic properties of half-Heusler CoTi$_{1-x}$Fe$_x$Sb|Sean D. Harrington,Anthony D. Rice,Tobias Brown-Heft,Bastien Bonef,Abhishek Sharan,Anthony P. McFadden,John A. Logan,Mihir Pendharkar,Mayer M. Feldman,Ozge Mercan,Andre G. Petukhov,Anderson Janotti,Leyla Çolakerol Arslan,Chris J. Palmstrøm###
(1841653, 1841653)
 Evidence of superparamagnetism for x<missing VAR>0.3and x<missing VAR>0.2 suggests for moderate levels of Fe, demixing of theCoTi1-xFex<missing VAR>Sb films into Fe rich and Fe deficient regions may bepresent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[336.0, 0.05, ',', 6],[79.0, -18.5, '%', 1],[74.0, 100, 'kOe', 1]

Fe
###Growth, electrical, structural, and magnetic properties of half-Heusler CoTi$_{1-x}$Fe$_x$Sb|Sean D. Harrington,Anthony D. Rice,Tobias Brown-Heft,Bastien Bonef,Abhishek Sharan,Anthony P. McFadden,John A. Logan,Mihir Pendharkar,Mayer M. Feldman,Ozge Mercan,Andre G. Petukhov,Anderson Janotti,Leyla Çolakerol Arslan,Chris J. Palmstrøm###
(1841659, 1841659)
 Evidence of superparamagnetism for x<missing VAR>0.3and x<missing VAR>0.2 suggests for moderate levels of Fe, demixing of theCoTi1-xFex<missing VAR>Sb films into Fe rich and Fe deficient regions may bepresent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[342.0, 0.05, ',', 6],[85.0, -18.5, '%', 1],[80.0, 100, 'kOe', 1]

Fe
###Growth, electrical, structural, and magnetic properties of half-Heusler CoTi$_{1-x}$Fe$_x$Sb|Sean D. Harrington,Anthony D. Rice,Tobias Brown-Heft,Bastien Bonef,Abhishek Sharan,Anthony P. McFadden,John A. Logan,Mihir Pendharkar,Mayer M. Feldman,Ozge Mercan,Andre G. Petukhov,Anderson Janotti,Leyla Çolakerol Arslan,Chris J. Palmstrøm###
(1841689, 1841689)
 Atom probe tomography is used to examine the Fe distribution in ax<missing VAR>0.3 film.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[372.0, 0.05, ',', 7],[115.0, -18.5, '%', 2],[110.0, 100, 'kOe', 2]

Fe
###Growth, electrical, structural, and magnetic properties of half-Heusler CoTi$_{1-x}$Fe$_x$Sb|Sean D. Harrington,Anthony D. Rice,Tobias Brown-Heft,Bastien Bonef,Abhishek Sharan,Anthony P. McFadden,John A. Logan,Mihir Pendharkar,Mayer M. Feldman,Ozge Mercan,Andre G. Petukhov,Anderson Janotti,Leyla Çolakerol Arslan,Chris J. Palmstrøm###
(1841718, 1841718)
 Statistical analysis reveals a nonhomogeneous distribution of Featoms throughout the film, which is used to explain the observed magnetic andelectrical behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[401.0, 0.05, ',', 8],[144.0, -18.5, '%', 3],[139.0, 100, 'kOe', 3]

S
###SMART: Secure Magnetoelectric AntifeRromagnet-Based Tamper-Proof Non-Volatile Memory|Nikhil Rangarajan,Satwik Patnaik,Johann Knechtel,Ozgur Sinanoglu,Shaloo Rakheja###
(1841762, 1841762)
SMART Secure Magnetoelectric AntifeRromagnet-Based Tamper-Proof Non-Volatile Memory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[637.0, 0, 'and', 9],[638.0, 1, 'logic', 9]

NV
###SMART: Secure Magnetoelectric AntifeRromagnet-Based Tamper-Proof Non-Volatile Memory|Nikhil Rangarajan,Satwik Patnaik,Johann Knechtel,Ozgur Sinanoglu,Shaloo Rakheja###
(1841809, 1841810)
 The storage industry is moving toward emerging non-volatile memories (NVMs),including the spin-transfer torque magnetoresistive random-access memory(STT-MRAM) and the phase-change memory (PCM), owing to their high density andlow-power operation.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[589.0, 0, 'and', 8],[590.0, 1, 'logic', 8]

S
###SMART: Secure Magnetoelectric AntifeRromagnet-Based Tamper-Proof Non-Volatile Memory|Nikhil Rangarajan,Satwik Patnaik,Johann Knechtel,Ozgur Sinanoglu,Shaloo Rakheja###
(1841836, 1841836)
 The storage industry is moving toward emerging non-volatile memories (NVMs),including the spin-transfer torque magnetoresistive random-access memory(STT-MRAM) and the phase-change memory (PCM), owing to their high density andlow-power operation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[563.0, 0, 'and', 8],[564.0, 1, 'logic', 8]

PC
###SMART: Secure Magnetoelectric AntifeRromagnet-Based Tamper-Proof Non-Volatile Memory|Nikhil Rangarajan,Satwik Patnaik,Johann Knechtel,Ozgur Sinanoglu,Shaloo Rakheja###
(1841857, 1841858)
 The storage industry is moving toward emerging non-volatile memories (NVMs),including the spin-transfer torque magnetoresistive random-access memory(STT-MRAM) and the phase-change memory (PCM), owing to their high density andlow-power operation.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[541.0, 0, 'and', 8],[542.0, 1, 'logic', 8]

In
###SMART: Secure Magnetoelectric AntifeRromagnet-Based Tamper-Proof Non-Volatile Memory|Nikhil Rangarajan,Satwik Patnaik,Johann Knechtel,Ozgur Sinanoglu,Shaloo Rakheja###
(1841883, 1841883)
 In this paper, we demonstrate, for the first time, circuitmodels and performance benchmarking for the domain wall (D<missing VAR>W) reversal-basedmagnetoelectric-antiferromagnetic random access memory (ME-AFMRAM) atcell-level and at array-level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[516.0, 0, 'and', 7],[517.0, 1, 'logic', 7]

W
###SMART: Secure Magnetoelectric AntifeRromagnet-Based Tamper-Proof Non-Volatile Memory|Nikhil Rangarajan,Satwik Patnaik,Johann Knechtel,Ozgur Sinanoglu,Shaloo Rakheja###
(1841925, 1841925)
 In this paper, we demonstrate, for the first time, circuitmodels and performance benchmarking for the domain wall (D<missing VAR>W) reversal-basedmagnetoelectric-antiferromagnetic random access memory (ME-AFMRAM) atcell-level and at array-level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[474.0, 0, 'and', 7],[475.0, 1, 'logic', 7]

F
###SMART: Secure Magnetoelectric AntifeRromagnet-Based Tamper-Proof Non-Volatile Memory|Nikhil Rangarajan,Satwik Patnaik,Johann Knechtel,Ozgur Sinanoglu,Shaloo Rakheja###
(1841948, 1841948)
 In this paper, we demonstrate, for the first time, circuitmodels and performance benchmarking for the domain wall (D<missing VAR>W) reversal-basedmagnetoelectric-antiferromagnetic random access memory (ME-AFMRAM) atcell-level and at array-level.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[451.0, 0, 'and', 7],[452.0, 1, 'logic', 7]

In
###SMART: Secure Magnetoelectric AntifeRromagnet-Based Tamper-Proof Non-Volatile Memory|Nikhil Rangarajan,Satwik Patnaik,Johann Knechtel,Ozgur Sinanoglu,Shaloo Rakheja###
(1842010, 1842010)
 In the coherent rotation regime, the ultra-low powermagnetoelectric switching coupled with the terahertz-range antiferromagneticdynamics result in substantially lower energy-per-bit and latency metrics forthe ME-AFMRAM<missing VAR> compared to other NVMs including STTMRAM<missing VAR> and PCM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[389.0, 0, 'and', 5],[390.0, 1, 'logic', 5]

F
###SMART: Secure Magnetoelectric AntifeRromagnet-Based Tamper-Proof Non-Volatile Memory|Nikhil Rangarajan,Satwik Patnaik,Johann Knechtel,Ozgur Sinanoglu,Shaloo Rakheja###
(1842078, 1842078)
 In the coherent rotation regime, the ultra-low powermagnetoelectric switching coupled with the terahertz-range antiferromagneticdynamics result in substantially lower energy-per-bit and latency metrics forthe ME-AFMRAM<missing VAR> compared to other NVMs including STTMRAM<missing VAR> and PCM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[321.0, 0, 'and', 5],[322.0, 1, 'logic', 5]

NV
###SMART: Secure Magnetoelectric AntifeRromagnet-Based Tamper-Proof Non-Volatile Memory|Nikhil Rangarajan,Satwik Patnaik,Johann Knechtel,Ozgur Sinanoglu,Shaloo Rakheja###
(1842090, 1842091)
 In the coherent rotation regime, the ultra-low powermagnetoelectric switching coupled with the terahertz-range antiferromagneticdynamics result in substantially lower energy-per-bit and latency metrics forthe ME-AFMRAM<missing VAR> compared to other NVMs including STTMRAM<missing VAR> and PCM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[308.0, 0, 'and', 5],[309.0, 1, 'logic', 5]

S
###SMART: Secure Magnetoelectric AntifeRromagnet-Based Tamper-Proof Non-Volatile Memory|Nikhil Rangarajan,Satwik Patnaik,Johann Knechtel,Ozgur Sinanoglu,Shaloo Rakheja###
(1842096, 1842096)
 In the coherent rotation regime, the ultra-low powermagnetoelectric switching coupled with the terahertz-range antiferromagneticdynamics result in substantially lower energy-per-bit and latency metrics forthe ME-AFMRAM<missing VAR> compared to other NVMs including STTMRAM<missing VAR> and PCM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[303.0, 0, 'and', 5],[304.0, 1, 'logic', 5]

PC
###SMART: Secure Magnetoelectric AntifeRromagnet-Based Tamper-Proof Non-Volatile Memory|Nikhil Rangarajan,Satwik Patnaik,Johann Knechtel,Ozgur Sinanoglu,Shaloo Rakheja###
(1842106, 1842107)
 In the coherent rotation regime, the ultra-low powermagnetoelectric switching coupled with the terahertz-range antiferromagneticdynamics result in substantially lower energy-per-bit and latency metrics forthe ME-AFMRAM<missing VAR> compared to other NVMs including STTMRAM<missing VAR> and PCM<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[292.0, 0, 'and', 5],[293.0, 1, 'logic', 5]

F
###SMART: Secure Magnetoelectric AntifeRromagnet-Based Tamper-Proof Non-Volatile Memory|Nikhil Rangarajan,Satwik Patnaik,Johann Knechtel,Ozgur Sinanoglu,Shaloo Rakheja###
(1842124, 1842124)
 Aftercharacterizing the novel ME-AFMRAM<missing VAR>, we leverage its unique properties to builda dense, on-chip, secure NVM<missing VAR> platform, called SMART A Secure MagnetoelectricAntiferromagnet- Based Tamper-Proof Non-Volatile Memory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[275.0, 0, 'and', 4],[276.0, 1, 'logic', 4]

NV
###SMART: Secure Magnetoelectric AntifeRromagnet-Based Tamper-Proof Non-Volatile Memory|Nikhil Rangarajan,Satwik Patnaik,Johann Knechtel,Ozgur Sinanoglu,Shaloo Rakheja###
(1842158, 1842159)
 Aftercharacterizing the novel ME-AFMRAM<missing VAR>, we leverage its unique properties to builda dense, on-chip, secure NVM<missing VAR> platform, called SMART A Secure MagnetoelectricAntiferromagnet- Based Tamper-Proof Non-Volatile Memory.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[240.0, 0, 'and', 4],[241.0, 1, 'logic', 4]

S
###SMART: Secure Magnetoelectric AntifeRromagnet-Based Tamper-Proof Non-Volatile Memory|Nikhil Rangarajan,Satwik Patnaik,Johann Knechtel,Ozgur Sinanoglu,Shaloo Rakheja###
(1842167, 1842167)
 Aftercharacterizing the novel ME-AFMRAM<missing VAR>, we leverage its unique properties to builda dense, on-chip, secure NVM<missing VAR> platform, called SMART A Secure MagnetoelectricAntiferromagnet- Based Tamper-Proof Non-Volatile Memory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[232.0, 0, 'and', 4],[233.0, 1, 'logic', 4]

NV
###SMART: Secure Magnetoelectric AntifeRromagnet-Based Tamper-Proof Non-Volatile Memory|Nikhil Rangarajan,Satwik Patnaik,Johann Knechtel,Ozgur Sinanoglu,Shaloo Rakheja###
(1842198, 1842199)
 New NVM<missing VAR> technologiesopen up challenges and opportunities from a data-security perspective.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[200.0, 0, 'and', 3],[201.0, 1, 'logic', 3]

NV
###SMART: Secure Magnetoelectric AntifeRromagnet-Based Tamper-Proof Non-Volatile Memory|Nikhil Rangarajan,Satwik Patnaik,Johann Knechtel,Ozgur Sinanoglu,Shaloo Rakheja###
(1842266, 1842267)
 Forexample, their sensitivity to magnetic fields and temperature fluctuations, andtheir data remanence after power-down make NVMs vulnerable to data theft andtampering attacks.
Featurization terminated normally.
0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 0, 'and', 2],[133.0, 1, 'logic', 2]

S
###SMART: Secure Magnetoelectric AntifeRromagnet-Based Tamper-Proof Non-Volatile Memory|Nikhil Rangarajan,Satwik Patnaik,Johann Knechtel,Ozgur Sinanoglu,Shaloo Rakheja###
(1842290, 1842290)
 The proposed SMART memory is not only resilient against dataconfidentiality attacks seeking to leak sensitive information but also ensuresdata integrity and prevents Denial-of-Service (DoS) attacks on the memory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[109.0, 0, 'and', 1],[110.0, 1, 'logic', 1]

S
###SMART: Secure Magnetoelectric AntifeRromagnet-Based Tamper-Proof Non-Volatile Memory|Nikhil Rangarajan,Satwik Patnaik,Johann Knechtel,Ozgur Sinanoglu,Shaloo Rakheja###
(1842348, 1842348)
 The proposed SMART memory is not only resilient against dataconfidentiality attacks seeking to leak sensitive information but also ensuresdata integrity and prevents Denial-of-Service (DoS) attacks on the memory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 0, 'and', 1],[52.0, 1, 'logic', 1]

(PSC)
###SMART: Secure Magnetoelectric AntifeRromagnet-Based Tamper-Proof Non-Volatile Memory|Nikhil Rangarajan,Satwik Patnaik,Johann Knechtel,Ozgur Sinanoglu,Shaloo Rakheja###
(1842377, 1842381)
 Itis impervious to particular power side-channel (PSC) attacks which exploitasymmetric read/write signatures for 0 and 1 logic levels, and photonicside-channel attacks which monitor photo-emission signatures from the chipbackside.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 0, 'and', 0],[19.0, 1, 'logic', 0]

At
###Relativistic Mechanism of Chiral Magnetic Current in Weyl Semimetals with Tilted Dispersion|Zaur Z. Alisultanov###
(1842820, 1842820)
 At presence of a tilt in thespectrum, this velocity renormalization is differ for different Weyl points.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Relativistic Mechanism of Chiral Magnetic Current in Weyl Semimetals with Tilted Dispersion|Zaur Z. Alisultanov###
(1842877, 1842877)
 As a consequence, anelectrical current arises along the magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

At
###Relativistic Mechanism of Chiral Magnetic Current in Weyl Semimetals with Tilted Dispersion|Zaur Z. Alisultanov###
(1842967, 1842967)
 At the same time, the conductivity corresponding to this transportmechanism does not depend on the scattering time like the Hall conductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CPP
###CPP Magnetoresistance of Magnetic Multilayers: A critical review|Jack Bass###
(1843069, 1843071)
CPP Magnetoresistance of Magnetic Multilayers A critical review.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[325.0, 1991, ',', 4]

CPP
###CPP Magnetoresistance of Magnetic Multilayers: A critical review|Jack Bass###
(1843137, 1843139)
 We present a comprehensive review of data and analysis of Giant (G)Magnetoresistance (MR) with Current-flow Perpendicular-to-layer-Planes (CPP-MR)of magnetic multilayers [F/N]n<missing VAR> (n<missing VAR>  number of repeats) with alternatingnanoscale layers of ferromagnetic (F) and non-magnetic (N) metals.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[257.0, 1991, ',', 3]

N
###CPP Magnetoresistance of Magnetic Multilayers: A critical review|Jack Bass###
(1843155, 1843155)
 We present a comprehensive review of data and analysis of Giant (G)Magnetoresistance (MR) with Current-flow Perpendicular-to-layer-Planes (CPP-MR)of magnetic multilayers [F/N]n<missing VAR> (n<missing VAR>  number of repeats) with alternatingnanoscale layers of ferromagnetic (F) and non-magnetic (N) metals.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[241.0, 1991, ',', 3]

(F)
###CPP Magnetoresistance of Magnetic Multilayers: A critical review|Jack Bass###
(1843183, 1843185)
 We present a comprehensive review of data and analysis of Giant (G)Magnetoresistance (MR) with Current-flow Perpendicular-to-layer-Planes (CPP-MR)of magnetic multilayers [F/N]n<missing VAR> (n<missing VAR>  number of repeats) with alternatingnanoscale layers of ferromagnetic (F) and non-magnetic (N) metals.
Featurization successful!
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[211.0, 1991, ',', 3]

(N)
###CPP Magnetoresistance of Magnetic Multilayers: A critical review|Jack Bass###
(1843193, 1843195)
 We present a comprehensive review of data and analysis of Giant (G)Magnetoresistance (MR) with Current-flow Perpendicular-to-layer-Planes (CPP-MR)of magnetic multilayers [F/N]n<missing VAR> (n<missing VAR>  number of repeats) with alternatingnanoscale layers of ferromagnetic (F) and non-magnetic (N) metals.
Featurization successful!
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[201.0, 1991, ',', 3]

F
###CPP Magnetoresistance of Magnetic Multilayers: A critical review|Jack Bass###
(1843239, 1843239)
 GMR, a largechange in resistance when an applied magnetic field changes the moment orderingof adjacent F-layers from anti-parallel (AP) to parallel (P), was discovered in1988 in the Current-flow-in-layer-Planes (CIP) geometry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[157.0, 1991, ',', 2]

P
###CPP Magnetoresistance of Magnetic Multilayers: A critical review|Jack Bass###
(1843251, 1843251)
 GMR, a largechange in resistance when an applied magnetic field changes the moment orderingof adjacent F-layers from anti-parallel (AP) to parallel (P), was discovered in1988 in the Current-flow-in-layer-Planes (CIP) geometry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 1991, ',', 2]

(P)
###CPP Magnetoresistance of Magnetic Multilayers: A critical review|Jack Bass###
(1843258, 1843260)
 GMR, a largechange in resistance when an applied magnetic field changes the moment orderingof adjacent F-layers from anti-parallel (AP) to parallel (P), was discovered in1988 in the Current-flow-in-layer-Planes (CIP) geometry.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 1991, ',', 2]

(CIP)
###CPP Magnetoresistance of Magnetic Multilayers: A critical review|Jack Bass###
(1843286, 1843290)
 GMR, a largechange in resistance when an applied magnetic field changes the moment orderingof adjacent F-layers from anti-parallel (AP) to parallel (P), was discovered in1988 in the Current-flow-in-layer-Planes (CIP) geometry.
Featurization successful!
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 1991, ',', 2]

CPP
###CPP Magnetoresistance of Magnetic Multilayers: A critical review|Jack Bass###
(1843297, 1843299)
 The CPP-MR has twoadvantages over the CIP-MR (1) it allows more direct access to the underlyingphysics; and (2) it is usually larger, which should be advantageous fordevices.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 1991, ',', 1]

CIP
###CPP Magnetoresistance of Magnetic Multilayers: A critical review|Jack Bass###
(1843315, 1843317)
 The CPP-MR has twoadvantages over the CIP-MR (1) it allows more direct access to the underlyingphysics; and (2) it is usually larger, which should be advantageous fordevices.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 1991, ',', 1]

CPP
###CPP Magnetoresistance of Magnetic Multilayers: A critical review|Jack Bass###
(1843381, 1843383)
 When the first CPP-MR data were published in 1991, it was not clearwhether electronic transport in GMR multilayers is fully diffusive or at leastpartly ballistic.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 1991, ',', 0]

CPP
###CPP Magnetoresistance of Magnetic Multilayers: A critical review|Jack Bass###
(1843491, 1843493)
 It was not known if theCPP-MR would be dominated by scattering within the F-metals or at the F/Ninterfaces.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 1991, ',', 2]

F
###CPP Magnetoresistance of Magnetic Multilayers: A critical review|Jack Bass###
(1843512, 1843512)
 It was not known if theCPP-MR would be dominated by scattering within the F-metals or at the F/Ninterfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 1991, ',', 2]

F/N
###CPP Magnetoresistance of Magnetic Multilayers: A critical review|Jack Bass###
(1843522, 1843524)
 It was not known if theCPP-MR would be dominated by scattering within the F-metals or at the F/Ninterfaces.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[126.0, 1991, ',', 2]

F
###CPP Magnetoresistance of Magnetic Multilayers: A critical review|Jack Bass###
(1843548, 1843548)
 Nothing was known about (1) spin-flipping within F-metals,characterized by a spin-diffusion length, l<missing VAR>(F)sf; (2) interface specificresistances (AR<missing VAR>  area A times resistance R) for N1/N2 interfaces; (3)interface specific resistances and spin-dependent scattering asymmetry at F/Nand F1/F2 interfaces; and (4) spin-flipping at F/N, F1/F2 and N1/N2 interfaces.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 1991, ',', 3]

(F)
###CPP Magnetoresistance of Magnetic Multilayers: A critical review|Jack Bass###
(1843568, 1843570)
 Nothing was known about (1) spin-flipping within F-metals,characterized by a spin-diffusion length, l<missing VAR>(F)sf; (2) interface specificresistances (AR<missing VAR>  area A times resistance R) for N1/N2 interfaces; (3)interface specific resistances and spin-dependent scattering asymmetry at F/Nand F1/F2 interfaces; and (4) spin-flipping at F/N, F1/F2 and N1/N2 interfaces.
Featurization successful!
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[172.0, 1991, ',', 3]

N1/N2
###CPP Magnetoresistance of Magnetic Multilayers: A critical review|Jack Bass###
(1843603, 1843607)
 Nothing was known about (1) spin-flipping within F-metals,characterized by a spin-diffusion length, l<missing VAR>(F)sf; (2) interface specificresistances (AR<missing VAR>  area A times resistance R) for N1/N2 interfaces; (3)interface specific resistances and spin-dependent scattering asymmetry at F/Nand F1/F2 interfaces; and (4) spin-flipping at F/N, F1/F2 and N1/N2 interfaces.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[207.0, 1991, ',', 3]

F/N
###CPP Magnetoresistance of Magnetic Multilayers: A critical review|Jack Bass###
(1843635, 1843637)
 Nothing was known about (1) spin-flipping within F-metals,characterized by a spin-diffusion length, l<missing VAR>(F)sf; (2) interface specificresistances (AR<missing VAR>  area A times resistance R) for N1/N2 interfaces; (3)interface specific resistances and spin-dependent scattering asymmetry at F/Nand F1/F2 interfaces; and (4) spin-flipping at F/N, F1/F2 and N1/N2 interfaces.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[239.0, 1991, ',', 3]

F1/F2
###CPP Magnetoresistance of Magnetic Multilayers: A critical review|Jack Bass###
(1843642, 1843646)
 Nothing was known about (1) spin-flipping within F-metals,characterized by a spin-diffusion length, l<missing VAR>(F)sf; (2) interface specificresistances (AR<missing VAR>  area A times resistance R) for N1/N2 interfaces; (3)interface specific resistances and spin-dependent scattering asymmetry at F/Nand F1/F2 interfaces; and (4) spin-flipping at F/N, F1/F2 and N1/N2 interfaces.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[246.0, 1991, ',', 3]

F/N
###CPP Magnetoresistance of Magnetic Multilayers: A critical review|Jack Bass###
(1843663, 1843665)
 Nothing was known about (1) spin-flipping within F-metals,characterized by a spin-diffusion length, l<missing VAR>(F)sf; (2) interface specificresistances (AR<missing VAR>  area A times resistance R) for N1/N2 interfaces; (3)interface specific resistances and spin-dependent scattering asymmetry at F/Nand F1/F2 interfaces; and (4) spin-flipping at F/N, F1/F2 and N1/N2 interfaces.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[267.0, 1991, ',', 3]

F1/F2
###CPP Magnetoresistance of Magnetic Multilayers: A critical review|Jack Bass###
(1843668, 1843672)
 Nothing was known about (1) spin-flipping within F-metals,characterized by a spin-diffusion length, l<missing VAR>(F)sf; (2) interface specificresistances (AR<missing VAR>  area A times resistance R) for N1/N2 interfaces; (3)interface specific resistances and spin-dependent scattering asymmetry at F/Nand F1/F2 interfaces; and (4) spin-flipping at F/N, F1/F2 and N1/N2 interfaces.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[272.0, 1991, ',', 3]

N1/N2
###CPP Magnetoresistance of Magnetic Multilayers: A critical review|Jack Bass###
(1843676, 1843680)
 Nothing was known about (1) spin-flipping within F-metals,characterized by a spin-diffusion length, l<missing VAR>(F)sf; (2) interface specificresistances (AR<missing VAR>  area A times resistance R) for N1/N2 interfaces; (3)interface specific resistances and spin-dependent scattering asymmetry at F/Nand F1/F2 interfaces; and (4) spin-flipping at F/N, F1/F2 and N1/N2 interfaces.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[280.0, 1991, ',', 3]

F
###CPP Magnetoresistance of Magnetic Multilayers: A critical review|Jack Bass###
(1843700, 1843700)
Knowledge of spin-dependent scattering asymmetries in F-metals and F-alloys,and of spin-flipping in N-metals and N-alloys was limited.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[304.0, 1991, ',', 4]

F
###CPP Magnetoresistance of Magnetic Multilayers: A critical review|Jack Bass###
(1843706, 1843706)
Knowledge of spin-dependent scattering asymmetries in F-metals and F-alloys,and of spin-flipping in N-metals and N-alloys was limited.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[310.0, 1991, ',', 4]

N
###CPP Magnetoresistance of Magnetic Multilayers: A critical review|Jack Bass###
(1843722, 1843722)
Knowledge of spin-dependent scattering asymmetries in F-metals and F-alloys,and of spin-flipping in N-metals and N-alloys was limited.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[326.0, 1991, ',', 4]

N
###CPP Magnetoresistance of Magnetic Multilayers: A critical review|Jack Bass###
(1843728, 1843728)
Knowledge of spin-dependent scattering asymmetries in F-metals and F-alloys,and of spin-flipping in N-metals and N-alloys was limited.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[332.0, 1991, ',', 4]

CPP
###CPP Magnetoresistance of Magnetic Multilayers: A critical review|Jack Bass###
(1843743, 1843745)
 We show how CPP-MRmeasurements have quantified the scattering and spin-flipping parameters thatdetermine CPP-MR for a wide range of F- and N-metals and alloys and of F/Npairs.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[347.0, 1991, ',', 5]

CPP
###CPP Magnetoresistance of Magnetic Multilayers: A critical review|Jack Bass###
(1843774, 1843776)
 We show how CPP-MRmeasurements have quantified the scattering and spin-flipping parameters thatdetermine CPP-MR for a wide range of F- and N-metals and alloys and of F/Npairs.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[378.0, 1991, ',', 5]

F
###CPP Magnetoresistance of Magnetic Multilayers: A critical review|Jack Bass###
(1843791, 1843791)
 We show how CPP-MRmeasurements have quantified the scattering and spin-flipping parameters thatdetermine CPP-MR for a wide range of F- and N-metals and alloys and of F/Npairs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[395.0, 1991, ',', 5]

N
###CPP Magnetoresistance of Magnetic Multilayers: A critical review|Jack Bass###
(1843796, 1843796)
 We show how CPP-MRmeasurements have quantified the scattering and spin-flipping parameters thatdetermine CPP-MR for a wide range of F- and N-metals and alloys and of F/Npairs.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[400.0, 1991, ',', 5]

F/N
###CPP Magnetoresistance of Magnetic Multilayers: A critical review|Jack Bass###
(1843808, 1843810)
 We show how CPP-MRmeasurements have quantified the scattering and spin-flipping parameters thatdetermine CPP-MR for a wide range of F- and N-metals and alloys and of F/Npairs.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[412.0, 1991, ',', 5]

F
###CPP Magnetoresistance of Magnetic Multilayers: A critical review|Jack Bass###
(1843832, 1843832)
 We also review progress in finding techniques and F-alloys and F/N pairsto enhance the CPP-MR to make it more competitive for devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[436.0, 1991, ',', 6]

F/N
###CPP Magnetoresistance of Magnetic Multilayers: A critical review|Jack Bass###
(1843838, 1843840)
 We also review progress in finding techniques and F-alloys and F/N pairsto enhance the CPP-MR to make it more competitive for devices.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[442.0, 1991, ',', 6]

CPP
###CPP Magnetoresistance of Magnetic Multilayers: A critical review|Jack Bass###
(1843851, 1843853)
 We also review progress in finding techniques and F-alloys and F/N pairsto enhance the CPP-MR to make it more competitive for devices.
Featurization terminated normally.
0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[455.0, 1991, ',', 6]

In
###Modeling the magnetoresistance vs. field curves of GMR multilayers with antiferromagnetic and/or orthogonal coupling by assuming single-domain state and coherent rotation|Krisztián Szász,Imre Bakonyi###
(1843931, 1843931)
 In order to better understand the role of possible couplings in determiningthe giant magnetoresistance (GMR) behavior of multilayers, a knowledge of thedependence of the GMR on magnetic field H appears to be useful.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Modeling the magnetoresistance vs. field curves of GMR multilayers with antiferromagnetic and/or orthogonal coupling by assuming single-domain state and coherent rotation|Krisztián Szász,Imre Bakonyi###
(1844000, 1844000)
 In order to better understand the role of possible couplings in determiningthe giant magnetoresistance (GMR) behavior of multilayers, a knowledge of thedependence of the GMR on magnetic field H appears to be useful.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(H)
###Modeling the magnetoresistance vs. field curves of GMR multilayers with antiferromagnetic and/or orthogonal coupling by assuming single-domain state and coherent rotation|Krisztián Szász,Imre Bakonyi###
(1844063, 1844065)
 Since a fewspecific cases have only been treated theoretically in the literature, it wasdecided to carry out a modeling of the GMR(H) curves offerromagnetic/non-magnetic (FM<missing VAR>/NM) multilayers with various interlayercouplings.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Modeling the magnetoresistance vs. field curves of GMR multilayers with antiferromagnetic and/or orthogonal coupling by assuming single-domain state and coherent rotation|Krisztián Szász,Imre Bakonyi###
(1844079, 1844079)
 Since a fewspecific cases have only been treated theoretically in the literature, it wasdecided to carry out a modeling of the GMR(H) curves offerromagnetic/non-magnetic (FM<missing VAR>/NM) multilayers with various interlayercouplings.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Modeling the magnetoresistance vs. field curves of GMR multilayers with antiferromagnetic and/or orthogonal coupling by assuming single-domain state and coherent rotation|Krisztián Szász,Imre Bakonyi###
(1844082, 1844082)
 Since a fewspecific cases have only been treated theoretically in the literature, it wasdecided to carry out a modeling of the GMR(H) curves offerromagnetic/non-magnetic (FM<missing VAR>/NM) multilayers with various interlayercouplings.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Modeling the magnetoresistance vs. field curves of GMR multilayers with antiferromagnetic and/or orthogonal coupling by assuming single-domain state and coherent rotation|Krisztián Szász,Imre Bakonyi###
(1844116, 1844116)
 For simplicity, we focused on a trilayer structure (FM<missing VAR>1/NM<missing VAR>/FM<missing VAR>2)corresponding fairly well to the case of a large number of FM<missing VAR>/NM<missing VAR> bilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Modeling the magnetoresistance vs. field curves of GMR multilayers with antiferromagnetic and/or orthogonal coupling by assuming single-domain state and coherent rotation|Krisztián Szász,Imre Bakonyi###
(1844120, 1844120)
 For simplicity, we focused on a trilayer structure (FM<missing VAR>1/NM<missing VAR>/FM<missing VAR>2)corresponding fairly well to the case of a large number of FM<missing VAR>/NM<missing VAR> bilayers.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Modeling the magnetoresistance vs. field curves of GMR multilayers with antiferromagnetic and/or orthogonal coupling by assuming single-domain state and coherent rotation|Krisztián Szász,Imre Bakonyi###
(1844123, 1844123)
 For simplicity, we focused on a trilayer structure (FM<missing VAR>1/NM<missing VAR>/FM<missing VAR>2)corresponding fairly well to the case of a large number of FM<missing VAR>/NM<missing VAR> bilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Modeling the magnetoresistance vs. field curves of GMR multilayers with antiferromagnetic and/or orthogonal coupling by assuming single-domain state and coherent rotation|Krisztián Szász,Imre Bakonyi###
(1844151, 1844151)
 For simplicity, we focused on a trilayer structure (FM<missing VAR>1/NM<missing VAR>/FM<missing VAR>2)corresponding fairly well to the case of a large number of FM<missing VAR>/NM<missing VAR> bilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

N
###Modeling the magnetoresistance vs. field curves of GMR multilayers with antiferromagnetic and/or orthogonal coupling by assuming single-domain state and coherent rotation|Krisztián Szász,Imre Bakonyi###
(1844154, 1844154)
 For simplicity, we focused on a trilayer structure (FM<missing VAR>1/NM<missing VAR>/FM<missing VAR>2)corresponding fairly well to the case of a large number of FM<missing VAR>/NM<missing VAR> bilayers.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Modeling the magnetoresistance vs. field curves of GMR multilayers with antiferromagnetic and/or orthogonal coupling by assuming single-domain state and coherent rotation|Krisztián Szász,Imre Bakonyi###
(1844191, 1844191)
 Tocarry out the calculations, some fundamental assumptions were made (i) singledomain FM<missing VAR> layer, in plane magnetization; (ii) the magnetization of each layeris the same; (iii) the magnetization vectors rotate in the plane of the layersin an external magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Modeling the magnetoresistance vs. field curves of GMR multilayers with antiferromagnetic and/or orthogonal coupling by assuming single-domain state and coherent rotation|Krisztián Szász,Imre Bakonyi###
(1844262, 1844262)
 In order to calculate the GMR(H) function, weneed to know the magnetization process in the trilayer, i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(H)
###Modeling the magnetoresistance vs. field curves of GMR multilayers with antiferromagnetic and/or orthogonal coupling by assuming single-domain state and coherent rotation|Krisztián Szász,Imre Bakonyi###
(1844275, 1844277)
 In order to calculate the GMR(H) function, weneed to know the magnetization process in the trilayer, i.e.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(H)
###Modeling the magnetoresistance vs. field curves of GMR multilayers with antiferromagnetic and/or orthogonal coupling by assuming single-domain state and coherent rotation|Krisztián Szász,Imre Bakonyi###
(1844313, 1844315)
, the M<missing VAR>(H)function.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(H)
###Modeling the magnetoresistance vs. field curves of GMR multilayers with antiferromagnetic and/or orthogonal coupling by assuming single-domain state and coherent rotation|Krisztián Szász,Imre Bakonyi###
(1844337, 1844339)
 Therefore, first we calculate the equilibrium angle phi(H) betweenthe two magnetization vectors as a function of the field by minimizing thetotal energy of the trilayer.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(H)
###Modeling the magnetoresistance vs. field curves of GMR multilayers with antiferromagnetic and/or orthogonal coupling by assuming single-domain state and coherent rotation|Krisztián Szász,Imre Bakonyi###
(1844464, 1844466)
 According to most previous theoretical andexperimental works, the angular dependence of the GMR is fairly well describedby the relation GMR(phi)propto (1-cosphi) and we used this relation toderive the GMR(H) function.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(H)
###Modeling the magnetoresistance vs. field curves of GMR multilayers with antiferromagnetic and/or orthogonal coupling by assuming single-domain state and coherent rotation|Krisztián Szász,Imre Bakonyi###
(1844481, 1844483)
 Along this line, the M<missing VAR>(H) and GMR(H) curveswere calculated for the following cases (i) pure AF coupling; (ii) pureorthogonal coupling; (iii) AF coupling and orthogonal coupling simultaneouslypresent.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(H)
###Modeling the magnetoresistance vs. field curves of GMR multilayers with antiferromagnetic and/or orthogonal coupling by assuming single-domain state and coherent rotation|Krisztián Szász,Imre Bakonyi###
(1844490, 1844492)
 Along this line, the M<missing VAR>(H) and GMR(H) curveswere calculated for the following cases (i) pure AF coupling; (ii) pureorthogonal coupling; (iii) AF coupling and orthogonal coupling simultaneouslypresent.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Modeling the magnetoresistance vs. field curves of GMR multilayers with antiferromagnetic and/or orthogonal coupling by assuming single-domain state and coherent rotation|Krisztián Szász,Imre Bakonyi###
(1844516, 1844516)
 Along this line, the M<missing VAR>(H) and GMR(H) curveswere calculated for the following cases (i) pure AF coupling; (ii) pureorthogonal coupling; (iii) AF coupling and orthogonal coupling simultaneouslypresent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

F
###Modeling the magnetoresistance vs. field curves of GMR multilayers with antiferromagnetic and/or orthogonal coupling by assuming single-domain state and coherent rotation|Krisztián Szász,Imre Bakonyi###
(1844538, 1844538)
 Along this line, the M<missing VAR>(H) and GMR(H) curveswere calculated for the following cases (i) pure AF coupling; (ii) pureorthogonal coupling; (iii) AF coupling and orthogonal coupling simultaneouslypresent.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

As
###Modeling the magnetoresistance vs. field curves of GMR multilayers with antiferromagnetic and/or orthogonal coupling by assuming single-domain state and coherent rotation|Krisztián Szász,Imre Bakonyi###
(1844554, 1844554)
 As to the calculation of the GMR(H) curves, some of theseconfigurations have not yet been treated formerly or for some specificparameter values only.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(H)
###Modeling the magnetoresistance vs. field curves of GMR multilayers with antiferromagnetic and/or orthogonal coupling by assuming single-domain state and coherent rotation|Krisztián Szász,Imre Bakonyi###
(1844569, 1844571)
 As to the calculation of the GMR(H) curves, some of theseconfigurations have not yet been treated formerly or for some specificparameter values only.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(H)
###Modeling the magnetoresistance vs. field curves of GMR multilayers with antiferromagnetic and/or orthogonal coupling by assuming single-domain state and coherent rotation|Krisztián Szász,Imre Bakonyi###
(1844639, 1844641)
 For those cases for which calculations were reported inthe literature for M<missing VAR>(H) and GMR(H), our results agree with previousreports.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(H)
###Modeling the magnetoresistance vs. field curves of GMR multilayers with antiferromagnetic and/or orthogonal coupling by assuming single-domain state and coherent rotation|Krisztián Szász,Imre Bakonyi###
(1844648, 1844650)
 For those cases for which calculations were reported inthe literature for M<missing VAR>(H) and GMR(H), our results agree with previousreports.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu2
###Effect of Cu$^{2+}$ substitution in Spin-Orbit Coupled Sr$_2$Ir$_{1-x}$Cu$_x$O$_4$: Structure, magnetism and electronic properties|Imtiaz Noor Bhatti,R. S. Dhaka,A. K. Pramanik###
(1844679, 1844680)
Effect of Cu2 substitution in Spin-Orbit Coupled Sr2Ir1-xCux<missing VAR>O4 Structure, magnetism and electronic properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr2Ir1-xCu
###Effect of Cu$^{2+}$ substitution in Spin-Orbit Coupled Sr$_2$Ir$_{1-x}$Cu$_x$O$_4$: Structure, magnetism and electronic properties|Imtiaz Noor Bhatti,R. S. Dhaka,A. K. Pramanik###
(1844692, 1844698)
Effect of Cu2 substitution in Spin-Orbit Coupled Sr2Ir1-xCux<missing VAR>O4 Structure, magnetism and electronic properties.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

O4
###Effect of Cu$^{2+}$ substitution in Spin-Orbit Coupled Sr$_2$Ir$_{1-x}$Cu$_x$O$_4$: Structure, magnetism and electronic properties|Imtiaz Noor Bhatti,R. S. Dhaka,A. K. Pramanik###
(1844700, 1844701)
Effect of Cu2 substitution in Spin-Orbit Coupled Sr2Ir1-xCux<missing VAR>O4 Structure, magnetism and electronic properties.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr2IrO4
###Effect of Cu$^{2+}$ substitution in Spin-Orbit Coupled Sr$_2$Ir$_{1-x}$Cu$_x$O$_4$: Structure, magnetism and electronic properties|Imtiaz Noor Bhatti,R. S. Dhaka,A. K. Pramanik###
(1844715, 1844719)
 Sr2IrO4 is an extensively studied spin-orbit coupling induced insulatorwith antiferromagnetic ground state.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr2Ir1-xCu
###Effect of Cu$^{2+}$ substitution in Spin-Orbit Coupled Sr$_2$Ir$_{1-x}$Cu$_x$O$_4$: Structure, magnetism and electronic properties|Imtiaz Noor Bhatti,R. S. Dhaka,A. K. Pramanik###
(1844845, 1844851)
 Here, we report an evolution of structural, magnetic and electronicproperties in doped Sr2Ir1-xCux<missing VAR>O4 (x<missing VAR> leq 0.2).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
Abstract does not contain any numbers.

O4
###Effect of Cu$^{2+}$ substitution in Spin-Orbit Coupled Sr$_2$Ir$_{1-x}$Cu$_x$O$_4$: Structure, magnetism and electronic properties|Imtiaz Noor Bhatti,R. S. Dhaka,A. K. Pramanik###
(1844853, 1844854)
 Here, we report an evolution of structural, magnetic and electronicproperties in doped Sr2Ir1-xCux<missing VAR>O4 (x<missing VAR> leq 0.2).
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu2
###Effect of Cu$^{2+}$ substitution in Spin-Orbit Coupled Sr$_2$Ir$_{1-x}$Cu$_x$O$_4$: Structure, magnetism and electronic properties|Imtiaz Noor Bhatti,R. S. Dhaka,A. K. Pramanik###
(1844872, 1844873)
 Thesubstitution of Cu2 (3d<missing VAR>9) for Ir4 (5d<missing VAR>5) acts for electrondoping, though it tunes the related parameters such as, spin-orbit coupling,electron correlation and Ir charge state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ir4
###Effect of Cu$^{2+}$ substitution in Spin-Orbit Coupled Sr$_2$Ir$_{1-x}$Cu$_x$O$_4$: Structure, magnetism and electronic properties|Imtiaz Noor Bhatti,R. S. Dhaka,A. K. Pramanik###
(1844883, 1844884)
 Thesubstitution of Cu2 (3d<missing VAR>9) for Ir4 (5d<missing VAR>5) acts for electrondoping, though it tunes the related parameters such as, spin-orbit coupling,electron correlation and Ir charge state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ir
###Effect of Cu$^{2+}$ substitution in Spin-Orbit Coupled Sr$_2$Ir$_{1-x}$Cu$_x$O$_4$: Structure, magnetism and electronic properties|Imtiaz Noor Bhatti,R. S. Dhaka,A. K. Pramanik###
(1844933, 1844933)
 Thesubstitution of Cu2 (3d<missing VAR>9) for Ir4 (5d<missing VAR>5) acts for electrondoping, though it tunes the related parameters such as, spin-orbit coupling,electron correlation and Ir charge state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ir4
###Effect of Cu$^{2+}$ substitution in Spin-Orbit Coupled Sr$_2$Ir$_{1-x}$Cu$_x$O$_4$: Structure, magnetism and electronic properties|Imtiaz Noor Bhatti,R. S. Dhaka,A. K. Pramanik###
(1844945, 1844946)
 Moreover, both Ir4 andCu2 has single unpaired spin though it occupies different d<missing VAR>-orbitals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu2
###Effect of Cu$^{2+}$ substitution in Spin-Orbit Coupled Sr$_2$Ir$_{1-x}$Cu$_x$O$_4$: Structure, magnetism and electronic properties|Imtiaz Noor Bhatti,R. S. Dhaka,A. K. Pramanik###
(1844951, 1844952)
 Moreover, both Ir4 andCu2 has single unpaired spin though it occupies different d<missing VAR>-orbitals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Effect of Cu$^{2+}$ substitution in Spin-Orbit Coupled Sr$_2$Ir$_{1-x}$Cu$_x$O$_4$: Structure, magnetism and electronic properties|Imtiaz Noor Bhatti,R. S. Dhaka,A. K. Pramanik###
(1844978, 1844978)
With Cu substitution, system retains its original structural symmetry but thestructural parameters show systematic changes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ir4
###Effect of Cu$^{2+}$ substitution in Spin-Orbit Coupled Sr$_2$Ir$_{1-x}$Cu$_x$O$_4$: Structure, magnetism and electronic properties|Imtiaz Noor Bhatti,R. S. Dhaka,A. K. Pramanik###
(1845024, 1845025)
 X<missing VAR>-ray photoemission spectroscopymeasurements show Ir4 equivalently converts to Ir5 and asignificant enhancement in the density of states has been observed at the Fermilevel due to the contribution from the Cu 3d<missing VAR> orbitals, which supports theobserved decrease in the resistivity with Cu substitution.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ir5
###Effect of Cu$^{2+}$ substitution in Spin-Orbit Coupled Sr$_2$Ir$_{1-x}$Cu$_x$O$_4$: Structure, magnetism and electronic properties|Imtiaz Noor Bhatti,R. S. Dhaka,A. K. Pramanik###
(1845033, 1845034)
 X<missing VAR>-ray photoemission spectroscopymeasurements show Ir4 equivalently converts to Ir5 and asignificant enhancement in the density of states has been observed at the Fermilevel due to the contribution from the Cu 3d<missing VAR> orbitals, which supports theobserved decrease in the resistivity with Cu substitution.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Effect of Cu$^{2+}$ substitution in Spin-Orbit Coupled Sr$_2$Ir$_{1-x}$Cu$_x$O$_4$: Structure, magnetism and electronic properties|Imtiaz Noor Bhatti,R. S. Dhaka,A. K. Pramanik###
(1845082, 1845082)
 X<missing VAR>-ray photoemission spectroscopymeasurements show Ir4 equivalently converts to Ir5 and asignificant enhancement in the density of states has been observed at the Fermilevel due to the contribution from the Cu 3d<missing VAR> orbitals, which supports theobserved decrease in the resistivity with Cu substitution.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Effect of Cu$^{2+}$ substitution in Spin-Orbit Coupled Sr$_2$Ir$_{1-x}$Cu$_x$O$_4$: Structure, magnetism and electronic properties|Imtiaz Noor Bhatti,R. S. Dhaka,A. K. Pramanik###
(1845109, 1845109)
 X<missing VAR>-ray photoemission spectroscopymeasurements show Ir4 equivalently converts to Ir5 and asignificant enhancement in the density of states has been observed at the Fermilevel due to the contribution from the Cu 3d<missing VAR> orbitals, which supports theobserved decrease in the resistivity with Cu substitution.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Cu
###Effect of Cu$^{2+}$ substitution in Spin-Orbit Coupled Sr$_2$Ir$_{1-x}$Cu$_x$O$_4$: Structure, magnetism and electronic properties|Imtiaz Noor Bhatti,R. S. Dhaka,A. K. Pramanik###
(1845286, 1845286)
 Whole series of samples exhibit negative magnetoresistance atlow temperature which is considered to be a signature of weak localizationeffect in spin-orbit coupled system, and its evolution with Cu appears tofollow the variation of resistivity with x<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Landau quantization of nearly degenerate bands, and full symmetry classification of avoided Landau-level crossings|Chong Wang,Wenhui Duan,Leonid Glazman,A. Alexandradinata###
(1845482, 1845482)
 In this work, we present a generalizedquantization rule which treats the spin-orbit and Zeeman interactions on equalfooting, and therefore has wider applicability to spin-orbit-coupled materialslacking a spatial inversion center, or having magnetic order.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Landau quantization of nearly degenerate bands, and full symmetry classification of avoided Landau-level crossings|Chong Wang,Wenhui Duan,Leonid Glazman,A. Alexandradinata###
(1845751, 1845751)
 In particular, only one parameter is needed in the presence of spatialrotation or inversion; this single parameter may be the magnitude ororientation of the field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pb
###Hopping conductance and macroscopic quantum tunneling effect in three dimensional Pb$_x$(SiO$_2$)$_{1-x}$ nanogranular films|Xiu-Zhi Duan,Zhi-Hao He,Yang Yang,Zhi-Qing Li###
(1845987, 1845987)
Hopping conductance and macroscopic quantum tunneling effect in three dimensional Pbx<missing VAR>(SiO2)1-x<missing VAR> nanogranular films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 0.57, 'and', 2],[134.0, 0.5, ',', 3],[388.0, 0.5, '<', 7]

(SiO2)1
###Hopping conductance and macroscopic quantum tunneling effect in three dimensional Pb$_x$(SiO$_2$)$_{1-x}$ nanogranular films|Xiu-Zhi Duan,Zhi-Hao He,Yang Yang,Zhi-Qing Li###
(1845989, 1845994)
Hopping conductance and macroscopic quantum tunneling effect in three dimensional Pbx<missing VAR>(SiO2)1-x<missing VAR> nanogranular films.
Featurization successful!
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 0.57, 'and', 2],[127.0, 0.5, ',', 3],[381.0, 0.5, '<', 7]

Pb
###Hopping conductance and macroscopic quantum tunneling effect in three dimensional Pb$_x$(SiO$_2$)$_{1-x}$ nanogranular films|Xiu-Zhi Duan,Zhi-Hao He,Yang Yang,Zhi-Qing Li###
(1846024, 1846024)
 We have studied the low-temperature electrical transport properties ofPbx<missing VAR>(SiO2)1-x<missing VAR> (x<missing VAR> being the Pb volume fraction) nanogranular filmswith thicknesses of sim1000 nm and x<missing VAR> spanning the dielectric,transitional, and metallic regions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 0.57, 'and', 1],[97.0, 0.5, ',', 2],[351.0, 0.5, '<', 6]

(SiO2)1
###Hopping conductance and macroscopic quantum tunneling effect in three dimensional Pb$_x$(SiO$_2$)$_{1-x}$ nanogranular films|Xiu-Zhi Duan,Zhi-Hao He,Yang Yang,Zhi-Qing Li###
(1846026, 1846031)
 We have studied the low-temperature electrical transport properties ofPbx<missing VAR>(SiO2)1-x<missing VAR> (x<missing VAR> being the Pb volume fraction) nanogranular filmswith thicknesses of sim1000 nm and x<missing VAR> spanning the dielectric,transitional, and metallic regions.
Featurization successful!
0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 0.57, 'and', 1],[90.0, 0.5, ',', 2],[344.0, 0.5, '<', 6]

Pb
###Hopping conductance and macroscopic quantum tunneling effect in three dimensional Pb$_x$(SiO$_2$)$_{1-x}$ nanogranular films|Xiu-Zhi Duan,Zhi-Hao He,Yang Yang,Zhi-Qing Li###
(1846042, 1846042)
 We have studied the low-temperature electrical transport properties ofPbx<missing VAR>(SiO2)1-x<missing VAR> (x<missing VAR> being the Pb volume fraction) nanogranular filmswith thicknesses of sim1000 nm and x<missing VAR> spanning the dielectric,transitional, and metallic regions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 0.57, 'and', 1],[79.0, 0.5, ',', 2],[333.0, 0.5, '<', 6]

B
###Hopping conductance and macroscopic quantum tunneling effect in three dimensional Pb$_x$(SiO$_2$)$_{1-x}$ nanogranular films|Xiu-Zhi Duan,Zhi-Hao He,Yang Yang,Zhi-Qing Li###
(1846176, 1846176)
 For films with x<missing VAR>lesssim0.50, theresistivities rho as functions of temperature T<missing VAR> obeyrhoproptoexp(Delta/kBT) relation (Delta being the localsuperconducting gap and the k<missing VAR>B Boltzmann constant) below the superconductingtransition temperature Tc (sim7 K) of Pb granules.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[68.0, 0.57, 'and', 1],[55.0, 0.5, ',', 0],[199.0, 0.5, '<', 4]

K
###Hopping conductance and macroscopic quantum tunneling effect in three dimensional Pb$_x$(SiO$_2$)$_{1-x}$ nanogranular films|Xiu-Zhi Duan,Zhi-Hao He,Yang Yang,Zhi-Qing Li###
(1846201, 1846201)
 For films with x<missing VAR>lesssim0.50, theresistivities rho as functions of temperature T<missing VAR> obeyrhoproptoexp(Delta/kBT) relation (Delta being the localsuperconducting gap and the k<missing VAR>B Boltzmann constant) below the superconductingtransition temperature Tc (sim7 K) of Pb granules.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 0.57, 'and', 1],[80.0, 0.5, ',', 0],[174.0, 0.5, '<', 4]

Pb
###Hopping conductance and macroscopic quantum tunneling effect in three dimensional Pb$_x$(SiO$_2$)$_{1-x}$ nanogranular films|Xiu-Zhi Duan,Zhi-Hao He,Yang Yang,Zhi-Qing Li###
(1846206, 1846206)
 For films with x<missing VAR>lesssim0.50, theresistivities rho as functions of temperature T<missing VAR> obeyrhoproptoexp(Delta/kBT) relation (Delta being the localsuperconducting gap and the k<missing VAR>B Boltzmann constant) below the superconductingtransition temperature Tc (sim7 K) of Pb granules.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 0.57, 'and', 1],[85.0, 0.5, ',', 0],[169.0, 0.5, '<', 4]

Pb
###Hopping conductance and macroscopic quantum tunneling effect in three dimensional Pb$_x$(SiO$_2$)$_{1-x}$ nanogranular films|Xiu-Zhi Duan,Zhi-Hao He,Yang Yang,Zhi-Qing Li###
(1846534, 1846534)
 Treating the conducting paths composed of Pbparticles as nanowires, we have found that the R(T) data below Tc can bewell explained by a model that includes both thermally activated phase slipsand quantum phase slips.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[426.0, 0.57, 'and', 9],[413.0, 0.5, ',', 8],[159.0, 0.5, '<', 4]

Mn3Ir
###Magnetic and electrical transport signatures of uncompensated moments in epitaxial thin films of the non-collinear antiferromagnet Mn$_{3}$Ir|James M. Taylor,Edouard Lesne,Anastasios Markou,Fasil Kidane Dejene,Pranava Keerthi Sivakumar,Simon Pöllath,Kumari Gaurav Rana,Neeraj Kumar,Chen Luo,Hanjo Ryll,Florin Radu,Florian Kronast,Peter Werner,Christian H. Back,Claudia Felser,Stuart S. P. Parkin###
(1846647, 1846649)
Magnetic and electrical transport signatures of uncompensated moments in epitaxial thin films of the non-collinear antiferromagnet Mn3Ir.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[363.0, 3, 'nm', 9],[545.0, 20, 'nm', 12]

Mn3Ir
###Magnetic and electrical transport signatures of uncompensated moments in epitaxial thin films of the non-collinear antiferromagnet Mn$_{3}$Ir|James M. Taylor,Edouard Lesne,Anastasios Markou,Fasil Kidane Dejene,Pranava Keerthi Sivakumar,Simon Pöllath,Kumari Gaurav Rana,Neeraj Kumar,Chen Luo,Hanjo Ryll,Florin Radu,Florian Kronast,Peter Werner,Christian H. Back,Claudia Felser,Stuart S. P. Parkin###
(1846682, 1846684)
 Mn3Ir and Mn3Pt) or a D<missing VAR>019 hexagonal structure (e.g.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[328.0, 3, 'nm', 7],[510.0, 20, 'nm', 10]

Pt
###Magnetic and electrical transport signatures of uncompensated moments in epitaxial thin films of the non-collinear antiferromagnet Mn$_{3}$Ir|James M. Taylor,Edouard Lesne,Anastasios Markou,Fasil Kidane Dejene,Pranava Keerthi Sivakumar,Simon Pöllath,Kumari Gaurav Rana,Neeraj Kumar,Chen Luo,Hanjo Ryll,Florin Radu,Florian Kronast,Peter Werner,Christian H. Back,Claudia Felser,Stuart S. P. Parkin###
(1846690, 1846690)
 Mn3Ir and Mn3Pt) or a D<missing VAR>019 hexagonal structure (e.g.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[322.0, 3, 'nm', 7],[504.0, 20, 'nm', 10]

Mn3Sn
###Magnetic and electrical transport signatures of uncompensated moments in epitaxial thin films of the non-collinear antiferromagnet Mn$_{3}$Ir|James M. Taylor,Edouard Lesne,Anastasios Markou,Fasil Kidane Dejene,Pranava Keerthi Sivakumar,Simon Pöllath,Kumari Gaurav Rana,Neeraj Kumar,Chen Luo,Hanjo Ryll,Florin Radu,Florian Kronast,Peter Werner,Christian H. Back,Claudia Felser,Stuart S. P. Parkin###
(1846712, 1846714)
Mn3Sn and Mn3Ge), exhibit a number of novel phenomena of interest totopological spintronics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[298.0, 3, 'nm', 6],[480.0, 20, 'nm', 9]

Ge
###Magnetic and electrical transport signatures of uncompensated moments in epitaxial thin films of the non-collinear antiferromagnet Mn$_{3}$Ir|James M. Taylor,Edouard Lesne,Anastasios Markou,Fasil Kidane Dejene,Pranava Keerthi Sivakumar,Simon Pöllath,Kumari Gaurav Rana,Neeraj Kumar,Chen Luo,Hanjo Ryll,Florin Radu,Florian Kronast,Peter Werner,Christian H. Back,Claudia Felser,Stuart S. P. Parkin###
(1846720, 1846720)
Mn3Sn and Mn3Ge), exhibit a number of novel phenomena of interest totopological spintronics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[292.0, 3, 'nm', 6],[474.0, 20, 'nm', 9]

Mn3Pt
###Magnetic and electrical transport signatures of uncompensated moments in epitaxial thin films of the non-collinear antiferromagnet Mn$_{3}$Ir|James M. Taylor,Edouard Lesne,Anastasios Markou,Fasil Kidane Dejene,Pranava Keerthi Sivakumar,Simon Pöllath,Kumari Gaurav Rana,Neeraj Kumar,Chen Luo,Hanjo Ryll,Florin Radu,Florian Kronast,Peter Werner,Christian H. Back,Claudia Felser,Stuart S. P. Parkin###
(1846767, 1846769)
 Amongst the cubic systems, for example, tetragonallydistorted Mn3Pt exhibits an intrinsic anomalous Hall effect (AHE).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[243.0, 3, 'nm', 5],[425.0, 20, 'nm', 8]

H
###Magnetic and electrical transport signatures of uncompensated moments in epitaxial thin films of the non-collinear antiferromagnet Mn$_{3}$Ir|James M. Taylor,Edouard Lesne,Anastasios Markou,Fasil Kidane Dejene,Pranava Keerthi Sivakumar,Simon Pöllath,Kumari Gaurav Rana,Neeraj Kumar,Chen Luo,Hanjo Ryll,Florin Radu,Florian Kronast,Peter Werner,Christian H. Back,Claudia Felser,Stuart S. P. Parkin###
(1846785, 1846785)
 Amongst the cubic systems, for example, tetragonallydistorted Mn3Pt exhibits an intrinsic anomalous Hall effect (AHE).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[227.0, 3, 'nm', 5],[409.0, 20, 'nm', 8]

Mn3Pt
###Magnetic and electrical transport signatures of uncompensated moments in epitaxial thin films of the non-collinear antiferromagnet Mn$_{3}$Ir|James M. Taylor,Edouard Lesne,Anastasios Markou,Fasil Kidane Dejene,Pranava Keerthi Sivakumar,Simon Pöllath,Kumari Gaurav Rana,Neeraj Kumar,Chen Luo,Hanjo Ryll,Florin Radu,Florian Kronast,Peter Werner,Christian H. Back,Claudia Felser,Stuart S. P. Parkin###
(1846794, 1846796)
However, Mn3Pt only enters a non-collinear magnetic phase close to thestoichiometric composition and at suitably large thicknesses.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[216.0, 3, 'nm', 4],[398.0, 20, 'nm', 7]

Mn3Ir
###Magnetic and electrical transport signatures of uncompensated moments in epitaxial thin films of the non-collinear antiferromagnet Mn$_{3}$Ir|James M. Taylor,Edouard Lesne,Anastasios Markou,Fasil Kidane Dejene,Pranava Keerthi Sivakumar,Simon Pöllath,Kumari Gaurav Rana,Neeraj Kumar,Chen Luo,Hanjo Ryll,Florin Radu,Florian Kronast,Peter Werner,Christian H. Back,Claudia Felser,Stuart S. P. Parkin###
(1846848, 1846850)
 Therefore, weturn our attention to Mn3Ir, the material of choice for use in exchangebias heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[162.0, 3, 'nm', 3],[344.0, 20, 'nm', 6]

In
###Magnetic and electrical transport signatures of uncompensated moments in epitaxial thin films of the non-collinear antiferromagnet Mn$_{3}$Ir|James M. Taylor,Edouard Lesne,Anastasios Markou,Fasil Kidane Dejene,Pranava Keerthi Sivakumar,Simon Pöllath,Kumari Gaurav Rana,Neeraj Kumar,Chen Luo,Hanjo Ryll,Florin Radu,Florian Kronast,Peter Werner,Christian H. Back,Claudia Felser,Stuart S. P. Parkin###
(1846875, 1846875)
 In this paper, we investigate the magnetic andelectrical transport properties of epitaxially grown, face-centered-cubicgamma-Mn3Ir thin films with (111) crystal orientation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 3, 'nm', 2],[319.0, 20, 'nm', 5]

Mn3Ir
###Magnetic and electrical transport signatures of uncompensated moments in epitaxial thin films of the non-collinear antiferromagnet Mn$_{3}$Ir|James M. Taylor,Edouard Lesne,Anastasios Markou,Fasil Kidane Dejene,Pranava Keerthi Sivakumar,Simon Pöllath,Kumari Gaurav Rana,Neeraj Kumar,Chen Luo,Hanjo Ryll,Florin Radu,Florian Kronast,Peter Werner,Christian H. Back,Claudia Felser,Stuart S. P. Parkin###
(1846915, 1846917)
 In this paper, we investigate the magnetic andelectrical transport properties of epitaxially grown, face-centered-cubicgamma-Mn3Ir thin films with (111) crystal orientation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 3, 'nm', 2],[277.0, 20, 'nm', 5]

C
###Magnetic and electrical transport signatures of uncompensated moments in epitaxial thin films of the non-collinear antiferromagnet Mn$_{3}$Ir|James M. Taylor,Edouard Lesne,Anastasios Markou,Fasil Kidane Dejene,Pranava Keerthi Sivakumar,Simon Pöllath,Kumari Gaurav Rana,Neeraj Kumar,Chen Luo,Hanjo Ryll,Florin Radu,Florian Kronast,Peter Werner,Christian H. Back,Claudia Felser,Stuart S. P. Parkin###
(1847063, 1847063)
 This may explain a small remanent moment,observed at low temperatures, shown by XMCD<missing VAR> spectroscopy to arise fromuncompensated Mn spins.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 3, 'nm', 1],[131.0, 20, 'nm', 2]

Mn
###Magnetic and electrical transport signatures of uncompensated moments in epitaxial thin films of the non-collinear antiferromagnet Mn$_{3}$Ir|James M. Taylor,Edouard Lesne,Anastasios Markou,Fasil Kidane Dejene,Pranava Keerthi Sivakumar,Simon Pöllath,Kumari Gaurav Rana,Neeraj Kumar,Chen Luo,Hanjo Ryll,Florin Radu,Florian Kronast,Peter Werner,Christian H. Back,Claudia Felser,Stuart S. P. Parkin###
(1847077, 1847077)
 This may explain a small remanent moment,observed at low temperatures, shown by XMCD<missing VAR> spectroscopy to arise fromuncompensated Mn spins.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 3, 'nm', 1],[117.0, 20, 'nm', 2]

B
###Magnetic and electrical transport signatures of uncompensated moments in epitaxial thin films of the non-collinear antiferromagnet Mn$_{3}$Ir|James M. Taylor,Edouard Lesne,Anastasios Markou,Fasil Kidane Dejene,Pranava Keerthi Sivakumar,Simon Pöllath,Kumari Gaurav Rana,Neeraj Kumar,Chen Luo,Hanjo Ryll,Florin Radu,Florian Kronast,Peter Werner,Christian H. Back,Claudia Felser,Stuart S. P. Parkin###
(1847091, 1847091)
 Of the order 0.02 muB / atom, this dominateselectrical transport behavior, leading to a small AHE<missing VAR> and negativemagnetoresistance.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[79.0, 3, 'nm', 2],[103.0, 20, 'nm', 1]

H
###Magnetic and electrical transport signatures of uncompensated moments in epitaxial thin films of the non-collinear antiferromagnet Mn$_{3}$Ir|James M. Taylor,Edouard Lesne,Anastasios Markou,Fasil Kidane Dejene,Pranava Keerthi Sivakumar,Simon Pöllath,Kumari Gaurav Rana,Neeraj Kumar,Chen Luo,Hanjo Ryll,Florin Radu,Florian Kronast,Peter Werner,Christian H. Back,Claudia Felser,Stuart S. P. Parkin###
(1847119, 1847119)
 Of the order 0.02 muB / atom, this dominateselectrical transport behavior, leading to a small AHE<missing VAR> and negativemagnetoresistance.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 3, 'nm', 2],[75.0, 20, 'nm', 1]

(C)
###Magnetic and electrical transport signatures of uncompensated moments in epitaxial thin films of the non-collinear antiferromagnet Mn$_{3}$Ir|James M. Taylor,Edouard Lesne,Anastasios Markou,Fasil Kidane Dejene,Pranava Keerthi Sivakumar,Simon Pöllath,Kumari Gaurav Rana,Neeraj Kumar,Chen Luo,Hanjo Ryll,Florin Radu,Florian Kronast,Peter Werner,Christian H. Back,Claudia Felser,Stuart S. P. Parkin###
(1847167, 1847169)
 These results are discussed in terms of crystalmicrostructure and chiral domain behavior, with spatially resolved XML(C)D<missing VAR>-PEEMsupporting the conclusion that small antiferromagnetic domains, < 20 nm insize, of differing chirality account for the absence of observed Berrycurvature driven magnetotransport effects.
Featurization successful!
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 3, 'nm', 3],[25.0, 20, 'nm', 0]

P
###Magnetic and electrical transport signatures of uncompensated moments in epitaxial thin films of the non-collinear antiferromagnet Mn$_{3}$Ir|James M. Taylor,Edouard Lesne,Anastasios Markou,Fasil Kidane Dejene,Pranava Keerthi Sivakumar,Simon Pöllath,Kumari Gaurav Rana,Neeraj Kumar,Chen Luo,Hanjo Ryll,Florin Radu,Florian Kronast,Peter Werner,Christian H. Back,Claudia Felser,Stuart S. P. Parkin###
(1847172, 1847172)
 These results are discussed in terms of crystalmicrostructure and chiral domain behavior, with spatially resolved XML(C)D<missing VAR>-PEEMsupporting the conclusion that small antiferromagnetic domains, < 20 nm insize, of differing chirality account for the absence of observed Berrycurvature driven magnetotransport effects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[160.0, 3, 'nm', 3],[22.0, 20, 'nm', 0]

Y2
###Nonmagnetic substitution in pyrochlore iridate Y$_2$(Ir$_{1-x}$Ti$_{x}$)$_2$O$_7$: Structure, magnetism and electronic properties|Harish Kumar,A. K. Pramanik###
(1847250, 1847251)
Nonmagnetic substitution in pyrochlore iridate Y2(Ir1-xTix)2O7 Structure, magnetism and electronic properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[112.0, 0.0, ',', 2],[115.0, 0.02, ',', 2],[118.0, 0.05, ',', 2],[120.0, 0.1, 'and', 2]

Ir1-xTi
###Nonmagnetic substitution in pyrochlore iridate Y$_2$(Ir$_{1-x}$Ti$_{x}$)$_2$O$_7$: Structure, magnetism and electronic properties|Harish Kumar,A. K. Pramanik###
(1847253, 1847257)
Nonmagnetic substitution in pyrochlore iridate Y2(Ir1-xTix)2O7 Structure, magnetism and electronic properties.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[106.0, 0.0, ',', 2],[109.0, 0.02, ',', 2],[112.0, 0.05, ',', 2],[114.0, 0.1, 'and', 2]

O7
###Nonmagnetic substitution in pyrochlore iridate Y$_2$(Ir$_{1-x}$Ti$_{x}$)$_2$O$_7$: Structure, magnetism and electronic properties|Harish Kumar,A. K. Pramanik###
(1847261, 1847262)
Nonmagnetic substitution in pyrochlore iridate Y2(Ir1-xTix)2O7 Structure, magnetism and electronic properties.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 0.0, ',', 2],[104.0, 0.02, ',', 2],[107.0, 0.05, ',', 2],[109.0, 0.1, 'and', 2]

Y2
###Nonmagnetic substitution in pyrochlore iridate Y$_2$(Ir$_{1-x}$Ti$_{x}$)$_2$O$_7$: Structure, magnetism and electronic properties|Harish Kumar,A. K. Pramanik###
(1847345, 1847346)
 We have investigated thetemperature evolution of structural, magnetic and electronic properties indoped Y2(Ir1-xTix)2O7 (x<missing VAR>  0.0, 0.02, 0.05, 0.10 and 0.15)where the substitution of nonmagnetic Ti4 (3d<missing VAR>0) for Ir4 (5d<missing VAR>5)amounts to dilution of magnetic network and tuning of these parameters inopposite way.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 0.0, ',', 0],[20.0, 0.02, ',', 0],[23.0, 0.05, ',', 0],[25.0, 0.1, 'and', 0]

Ir1-xTi
###Nonmagnetic substitution in pyrochlore iridate Y$_2$(Ir$_{1-x}$Ti$_{x}$)$_2$O$_7$: Structure, magnetism and electronic properties|Harish Kumar,A. K. Pramanik###
(1847348, 1847352)
 We have investigated thetemperature evolution of structural, magnetic and electronic properties indoped Y2(Ir1-xTix)2O7 (x<missing VAR>  0.0, 0.02, 0.05, 0.10 and 0.15)where the substitution of nonmagnetic Ti4 (3d<missing VAR>0) for Ir4 (5d<missing VAR>5)amounts to dilution of magnetic network and tuning of these parameters inopposite way.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[11.0, 0.0, ',', 0],[14.0, 0.02, ',', 0],[17.0, 0.05, ',', 0],[19.0, 0.1, 'and', 0]

O7
###Nonmagnetic substitution in pyrochlore iridate Y$_2$(Ir$_{1-x}$Ti$_{x}$)$_2$O$_7$: Structure, magnetism and electronic properties|Harish Kumar,A. K. Pramanik###
(1847356, 1847357)
 We have investigated thetemperature evolution of structural, magnetic and electronic properties indoped Y2(Ir1-xTix)2O7 (x<missing VAR>  0.0, 0.02, 0.05, 0.10 and 0.15)where the substitution of nonmagnetic Ti4 (3d<missing VAR>0) for Ir4 (5d<missing VAR>5)amounts to dilution of magnetic network and tuning of these parameters inopposite way.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, 0.0, ',', 0],[9.0, 0.02, ',', 0],[12.0, 0.05, ',', 0],[14.0, 0.1, 'and', 0]

Ti4
###Nonmagnetic substitution in pyrochlore iridate Y$_2$(Ir$_{1-x}$Ti$_{x}$)$_2$O$_7$: Structure, magnetism and electronic properties|Harish Kumar,A. K. Pramanik###
(1847387, 1847388)
 We have investigated thetemperature evolution of structural, magnetic and electronic properties indoped Y2(Ir1-xTix)2O7 (x<missing VAR>  0.0, 0.02, 0.05, 0.10 and 0.15)where the substitution of nonmagnetic Ti4 (3d<missing VAR>0) for Ir4 (5d<missing VAR>5)amounts to dilution of magnetic network and tuning of these parameters inopposite way.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 0.0, ',', 0],[21.0, 0.02, ',', 0],[18.0, 0.05, ',', 0],[16.0, 0.1, 'and', 0]

Ir4
###Nonmagnetic substitution in pyrochlore iridate Y$_2$(Ir$_{1-x}$Ti$_{x}$)$_2$O$_7$: Structure, magnetism and electronic properties|Harish Kumar,A. K. Pramanik###
(1847398, 1847399)
 We have investigated thetemperature evolution of structural, magnetic and electronic properties indoped Y2(Ir1-xTix)2O7 (x<missing VAR>  0.0, 0.02, 0.05, 0.10 and 0.15)where the substitution of nonmagnetic Ti4 (3d<missing VAR>0) for Ir4 (5d<missing VAR>5)amounts to dilution of magnetic network and tuning of these parameters inopposite way.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[35.0, 0.0, ',', 0],[32.0, 0.02, ',', 0],[29.0, 0.05, ',', 0],[27.0, 0.1, 'and', 0]

Ti
###Nonmagnetic substitution in pyrochlore iridate Y$_2$(Ir$_{1-x}$Ti$_{x}$)$_2$O$_7$: Structure, magnetism and electronic properties|Harish Kumar,A. K. Pramanik###
(1847469, 1847469)
 The system retains its original structural symmetry but localstructural parameters show an evolution with Ti content.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 0.0, ',', 1],[103.0, 0.02, ',', 1],[100.0, 0.05, ',', 1],[98.0, 0.1, 'and', 1]

Ti
###Nonmagnetic substitution in pyrochlore iridate Y$_2$(Ir$_{1-x}$Ti$_{x}$)$_2$O$_7$: Structure, magnetism and electronic properties|Harish Kumar,A. K. Pramanik###
(1847511, 1847511)
 While the magnetictransition temperature is not largely influenced, both magnetic moment andmagnetic frustration decreases with Ti doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 0.0, ',', 2],[145.0, 0.02, ',', 2],[142.0, 0.05, ',', 2],[140.0, 0.1, 'and', 2]

Y2Ir2O7
###Nonmagnetic substitution in pyrochlore iridate Y$_2$(Ir$_{1-x}$Ti$_{x}$)$_2$O$_7$: Structure, magnetism and electronic properties|Harish Kumar,A. K. Pramanik###
(1847531, 1847536)
 Magnetic relaxation measurementshows the parent compound Y2Ir2O7 as well as its Ti doped analoguesare in nonequilibrium magnetic state where the magnetic relaxation rateincreases with Ti.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6363636363636364,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[168.0, 0.0, ',', 3],[165.0, 0.02, ',', 3],[162.0, 0.05, ',', 3],[160.0, 0.1, 'and', 3]

Ti
###Nonmagnetic substitution in pyrochlore iridate Y$_2$(Ir$_{1-x}$Ti$_{x}$)$_2$O$_7$: Structure, magnetism and electronic properties|Harish Kumar,A. K. Pramanik###
(1847546, 1847546)
 Magnetic relaxation measurementshows the parent compound Y2Ir2O7 as well as its Ti doped analoguesare in nonequilibrium magnetic state where the magnetic relaxation rateincreases with Ti.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[183.0, 0.0, ',', 3],[180.0, 0.02, ',', 3],[177.0, 0.05, ',', 3],[175.0, 0.1, 'and', 3]

Ti
###Nonmagnetic substitution in pyrochlore iridate Y$_2$(Ir$_{1-x}$Ti$_{x}$)$_2$O$_7$: Structure, magnetism and electronic properties|Harish Kumar,A. K. Pramanik###
(1847578, 1847578)
 Magnetic relaxation measurementshows the parent compound Y2Ir2O7 as well as its Ti doped analoguesare in nonequilibrium magnetic state where the magnetic relaxation rateincreases with Ti.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[215.0, 0.0, ',', 3],[212.0, 0.02, ',', 3],[209.0, 0.05, ',', 3],[207.0, 0.1, 'and', 3]

Y2
###Nonmagnetic substitution in pyrochlore iridate Y$_2$(Ir$_{1-x}$Ti$_{x}$)$_2$O$_7$: Structure, magnetism and electronic properties|Harish Kumar,A. K. Pramanik###
(1847696, 1847697)
 The electricalresistivity data of Y2(Ir1-xTix)2O7 series exhibitsinsulating behavior throughout the temperature range, however, the resistivitydecreases with Ti doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[333.0, 0.0, ',', 6],[330.0, 0.02, ',', 6],[327.0, 0.05, ',', 6],[325.0, 0.1, 'and', 6]

Ir1-xTi
###Nonmagnetic substitution in pyrochlore iridate Y$_2$(Ir$_{1-x}$Ti$_{x}$)$_2$O$_7$: Structure, magnetism and electronic properties|Harish Kumar,A. K. Pramanik###
(1847699, 1847703)
 The electricalresistivity data of Y2(Ir1-xTix)2O7 series exhibitsinsulating behavior throughout the temperature range, however, the resistivitydecreases with Ti doping.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[336.0, 0.0, ',', 6],[333.0, 0.02, ',', 6],[330.0, 0.05, ',', 6],[328.0, 0.1, 'and', 6]

O7
###Nonmagnetic substitution in pyrochlore iridate Y$_2$(Ir$_{1-x}$Ti$_{x}$)$_2$O$_7$: Structure, magnetism and electronic properties|Harish Kumar,A. K. Pramanik###
(1847707, 1847708)
 The electricalresistivity data of Y2(Ir1-xTix)2O7 series exhibitsinsulating behavior throughout the temperature range, however, the resistivitydecreases with Ti doping.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[344.0, 0.0, ',', 6],[341.0, 0.02, ',', 6],[338.0, 0.05, ',', 6],[336.0, 0.1, 'and', 6]

Ti
###Nonmagnetic substitution in pyrochlore iridate Y$_2$(Ir$_{1-x}$Ti$_{x}$)$_2$O$_7$: Structure, magnetism and electronic properties|Harish Kumar,A. K. Pramanik###
(1847740, 1847740)
 The electricalresistivity data of Y2(Ir1-xTix)2O7 series exhibitsinsulating behavior throughout the temperature range, however, the resistivitydecreases with Ti doping.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[377.0, 0.0, ',', 6],[374.0, 0.02, ',', 6],[371.0, 0.05, ',', 6],[369.0, 0.1, 'and', 6]

Ir
###Nonmagnetic substitution in pyrochlore iridate Y$_2$(Ir$_{1-x}$Ti$_{x}$)$_2$O$_7$: Structure, magnetism and electronic properties|Harish Kumar,A. K. Pramanik###
(1847843, 1847843)
 Similar toother Ir based oxides, a crossover from negative to positive MR has beenobserved in present system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[480.0, 0.0, ',', 9],[477.0, 0.02, ',', 9],[474.0, 0.05, ',', 9],[472.0, 0.1, 'and', 9]

B
###Origins Vs. fingerprints of the Jahn-Teller effect in d-electron ABX$_3$ perovskites|Julien Varignon,Manuel Bibes,Alex Zunger###
(1847911, 1847911)
 fingerprints of the Jahn-Teller effect in d<missing VAR>-electron ABX<missing VAR>3 perovskites.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 3, 'd', 1],[604.0, 3, 'd', 6]

B
###Origins Vs. fingerprints of the Jahn-Teller effect in d-electron ABX$_3$ perovskites|Julien Varignon,Manuel Bibes,Alex Zunger###
(1848153, 1848153)
 Here we analyze the driving forces behind theJahn-Teller motions and associated electronic fingerprints in a full range ofABX<missing VAR>3 compounds.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 3, 'd', 2],[362.0, 3, 'd', 3]

KCrF3
###Origins Vs. fingerprints of the Jahn-Teller effect in d-electron ABX$_3$ perovskites|Julien Varignon,Manuel Bibes,Alex Zunger###
(1848207, 1848210)
 a pure JT effect) such as KCrF3,KCuF3 or LaVO3 and proceed to relax the structures, finding quantitatively theJTD in excellent agreement with experiment; (ii) compounds such as LaMnO3 orLaTiO3 that do not show electronically driven JTD despite orbital degeneracies,because their strongly hybridized B, d-X, p<missing VAR> states supply but too weak JTforces to overcome the needed atomic distortions; (iii) although LaVO3 exhibitssimilar B, d-X, p<missing VAR> hybridizations as LaTiO3, the former compound exhibits arobust electronic instability while LaTiO3 has zero stabilization energy, thereason being that LaVO3 has two electrons t2g2 relative to LaTiO3 with just onet2g1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[219.0, 3, 'd', 4],[305.0, 3, 'd', 1]

KCuF3
###Origins Vs. fingerprints of the Jahn-Teller effect in d-electron ABX$_3$ perovskites|Julien Varignon,Manuel Bibes,Alex Zunger###
(1848214, 1848217)
 a pure JT effect) such as KCrF3,KCuF3 or LaVO3 and proceed to relax the structures, finding quantitatively theJTD in excellent agreement with experiment; (ii) compounds such as LaMnO3 orLaTiO3 that do not show electronically driven JTD despite orbital degeneracies,because their strongly hybridized B, d-X, p<missing VAR> states supply but too weak JTforces to overcome the needed atomic distortions; (iii) although LaVO3 exhibitssimilar B, d-X, p<missing VAR> hybridizations as LaTiO3, the former compound exhibits arobust electronic instability while LaTiO3 has zero stabilization energy, thereason being that LaVO3 has two electrons t2g2 relative to LaTiO3 with just onet2g1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[226.0, 3, 'd', 4],[298.0, 3, 'd', 1]

LaVO3
###Origins Vs. fingerprints of the Jahn-Teller effect in d-electron ABX$_3$ perovskites|Julien Varignon,Manuel Bibes,Alex Zunger###
(1848221, 1848224)
 a pure JT effect) such as KCrF3,KCuF3 or LaVO3 and proceed to relax the structures, finding quantitatively theJTD in excellent agreement with experiment; (ii) compounds such as LaMnO3 orLaTiO3 that do not show electronically driven JTD despite orbital degeneracies,because their strongly hybridized B, d-X, p<missing VAR> states supply but too weak JTforces to overcome the needed atomic distortions; (iii) although LaVO3 exhibitssimilar B, d-X, p<missing VAR> hybridizations as LaTiO3, the former compound exhibits arobust electronic instability while LaTiO3 has zero stabilization energy, thereason being that LaVO3 has two electrons t2g2 relative to LaTiO3 with just onet2g1.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[233.0, 3, 'd', 4],[291.0, 3, 'd', 1]

LaMnO3
###Origins Vs. fingerprints of the Jahn-Teller effect in d-electron ABX$_3$ perovskites|Julien Varignon,Manuel Bibes,Alex Zunger###
(1848271, 1848274)
 a pure JT effect) such as KCrF3,KCuF3 or LaVO3 and proceed to relax the structures, finding quantitatively theJTD in excellent agreement with experiment; (ii) compounds such as LaMnO3 orLaTiO3 that do not show electronically driven JTD despite orbital degeneracies,because their strongly hybridized B, d-X, p<missing VAR> states supply but too weak JTforces to overcome the needed atomic distortions; (iii) although LaVO3 exhibitssimilar B, d-X, p<missing VAR> hybridizations as LaTiO3, the former compound exhibits arobust electronic instability while LaTiO3 has zero stabilization energy, thereason being that LaVO3 has two electrons t2g2 relative to LaTiO3 with just onet2g1.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[283.0, 3, 'd', 4],[241.0, 3, 'd', 1]

LaTiO3
###Origins Vs. fingerprints of the Jahn-Teller effect in d-electron ABX$_3$ perovskites|Julien Varignon,Manuel Bibes,Alex Zunger###
(1848279, 1848282)
 a pure JT effect) such as KCrF3,KCuF3 or LaVO3 and proceed to relax the structures, finding quantitatively theJTD in excellent agreement with experiment; (ii) compounds such as LaMnO3 orLaTiO3 that do not show electronically driven JTD despite orbital degeneracies,because their strongly hybridized B, d-X, p<missing VAR> states supply but too weak JTforces to overcome the needed atomic distortions; (iii) although LaVO3 exhibitssimilar B, d-X, p<missing VAR> hybridizations as LaTiO3, the former compound exhibits arobust electronic instability while LaTiO3 has zero stabilization energy, thereason being that LaVO3 has two electrons t2g2 relative to LaTiO3 with just onet2g1.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[291.0, 3, 'd', 4],[233.0, 3, 'd', 1]

B
###Origins Vs. fingerprints of the Jahn-Teller effect in d-electron ABX$_3$ perovskites|Julien Varignon,Manuel Bibes,Alex Zunger###
(1848316, 1848316)
 a pure JT effect) such as KCrF3,KCuF3 or LaVO3 and proceed to relax the structures, finding quantitatively theJTD in excellent agreement with experiment; (ii) compounds such as LaMnO3 orLaTiO3 that do not show electronically driven JTD despite orbital degeneracies,because their strongly hybridized B, d-X, p<missing VAR> states supply but too weak JTforces to overcome the needed atomic distortions; (iii) although LaVO3 exhibitssimilar B, d-X, p<missing VAR> hybridizations as LaTiO3, the former compound exhibits arobust electronic instability while LaTiO3 has zero stabilization energy, thereason being that LaVO3 has two electrons t2g2 relative to LaTiO3 with just onet2g1.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[328.0, 3, 'd', 4],[199.0, 3, 'd', 1]

LaVO3
###Origins Vs. fingerprints of the Jahn-Teller effect in d-electron ABX$_3$ perovskites|Julien Varignon,Manuel Bibes,Alex Zunger###
(1848361, 1848364)
 a pure JT effect) such as KCrF3,KCuF3 or LaVO3 and proceed to relax the structures, finding quantitatively theJTD in excellent agreement with experiment; (ii) compounds such as LaMnO3 orLaTiO3 that do not show electronically driven JTD despite orbital degeneracies,because their strongly hybridized B, d-X, p<missing VAR> states supply but too weak JTforces to overcome the needed atomic distortions; (iii) although LaVO3 exhibitssimilar B, d-X, p<missing VAR> hybridizations as LaTiO3, the former compound exhibits arobust electronic instability while LaTiO3 has zero stabilization energy, thereason being that LaVO3 has two electrons t2g2 relative to LaTiO3 with just onet2g1.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[373.0, 3, 'd', 4],[151.0, 3, 'd', 1]

B
###Origins Vs. fingerprints of the Jahn-Teller effect in d-electron ABX$_3$ perovskites|Julien Varignon,Manuel Bibes,Alex Zunger###
(1848371, 1848371)
 a pure JT effect) such as KCrF3,KCuF3 or LaVO3 and proceed to relax the structures, finding quantitatively theJTD in excellent agreement with experiment; (ii) compounds such as LaMnO3 orLaTiO3 that do not show electronically driven JTD despite orbital degeneracies,because their strongly hybridized B, d-X, p<missing VAR> states supply but too weak JTforces to overcome the needed atomic distortions; (iii) although LaVO3 exhibitssimilar B, d-X, p<missing VAR> hybridizations as LaTiO3, the former compound exhibits arobust electronic instability while LaTiO3 has zero stabilization energy, thereason being that LaVO3 has two electrons t2g2 relative to LaTiO3 with just onet2g1.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[383.0, 3, 'd', 4],[144.0, 3, 'd', 1]

LaTiO3
###Origins Vs. fingerprints of the Jahn-Teller effect in d-electron ABX$_3$ perovskites|Julien Varignon,Manuel Bibes,Alex Zunger###
(1848385, 1848388)
 a pure JT effect) such as KCrF3,KCuF3 or LaVO3 and proceed to relax the structures, finding quantitatively theJTD in excellent agreement with experiment; (ii) compounds such as LaMnO3 orLaTiO3 that do not show electronically driven JTD despite orbital degeneracies,because their strongly hybridized B, d-X, p<missing VAR> states supply but too weak JTforces to overcome the needed atomic distortions; (iii) although LaVO3 exhibitssimilar B, d-X, p<missing VAR> hybridizations as LaTiO3, the former compound exhibits arobust electronic instability while LaTiO3 has zero stabilization energy, thereason being that LaVO3 has two electrons t2g2 relative to LaTiO3 with just onet2g1.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[397.0, 3, 'd', 4],[127.0, 3, 'd', 1]

LaTiO3
###Origins Vs. fingerprints of the Jahn-Teller effect in d-electron ABX$_3$ perovskites|Julien Varignon,Manuel Bibes,Alex Zunger###
(1848410, 1848413)
 a pure JT effect) such as KCrF3,KCuF3 or LaVO3 and proceed to relax the structures, finding quantitatively theJTD in excellent agreement with experiment; (ii) compounds such as LaMnO3 orLaTiO3 that do not show electronically driven JTD despite orbital degeneracies,because their strongly hybridized B, d-X, p<missing VAR> states supply but too weak JTforces to overcome the needed atomic distortions; (iii) although LaVO3 exhibitssimilar B, d-X, p<missing VAR> hybridizations as LaTiO3, the former compound exhibits arobust electronic instability while LaTiO3 has zero stabilization energy, thereason being that LaVO3 has two electrons t2g2 relative to LaTiO3 with just onet2g1.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[422.0, 3, 'd', 4],[102.0, 3, 'd', 1]

LaVO3
###Origins Vs. fingerprints of the Jahn-Teller effect in d-electron ABX$_3$ perovskites|Julien Varignon,Manuel Bibes,Alex Zunger###
(1848433, 1848436)
 a pure JT effect) such as KCrF3,KCuF3 or LaVO3 and proceed to relax the structures, finding quantitatively theJTD in excellent agreement with experiment; (ii) compounds such as LaMnO3 orLaTiO3 that do not show electronically driven JTD despite orbital degeneracies,because their strongly hybridized B, d-X, p<missing VAR> states supply but too weak JTforces to overcome the needed atomic distortions; (iii) although LaVO3 exhibitssimilar B, d-X, p<missing VAR> hybridizations as LaTiO3, the former compound exhibits arobust electronic instability while LaTiO3 has zero stabilization energy, thereason being that LaVO3 has two electrons t2g2 relative to LaTiO3 with just onet2g1.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[445.0, 3, 'd', 4],[79.0, 3, 'd', 1]

LaTiO3
###Origins Vs. fingerprints of the Jahn-Teller effect in d-electron ABX$_3$ perovskites|Julien Varignon,Manuel Bibes,Alex Zunger###
(1848453, 1848456)
 a pure JT effect) such as KCrF3,KCuF3 or LaVO3 and proceed to relax the structures, finding quantitatively theJTD in excellent agreement with experiment; (ii) compounds such as LaMnO3 orLaTiO3 that do not show electronically driven JTD despite orbital degeneracies,because their strongly hybridized B, d-X, p<missing VAR> states supply but too weak JTforces to overcome the needed atomic distortions; (iii) although LaVO3 exhibitssimilar B, d-X, p<missing VAR> hybridizations as LaTiO3, the former compound exhibits arobust electronic instability while LaTiO3 has zero stabilization energy, thereason being that LaVO3 has two electrons t2g2 relative to LaTiO3 with just onet2g1.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[465.0, 3, 'd', 4],[59.0, 3, 'd', 1]

YbRh2Si2
###Comment on "Tuning low-energy scales in YbRh$_2$Si$_2$ by non-isoelectronic substitution and pressure"|Steffen Wirth,Silke Paschen,Qimiao Si,Frank Steglich###
(1848600, 1848604)
Comment on Tuning low-energy scales in YbRh2Si2 by non-isoelectronic substitution and pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[20.0, 1, ',', 2],[39.0, 1, ',', 5],[447.0, 30, 'mK', 13],[450.0, 1, 'K', 13]

In
###Comment on "Tuning low-energy scales in YbRh$_2$Si$_2$ by non-isoelectronic substitution and pressure"|Steffen Wirth,Silke Paschen,Qimiao Si,Frank Steglich###
(1848619, 1848619)
 In Ref.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 1, ',', 1],[24.0, 1, ',', 4],[432.0, 30, 'mK', 12],[435.0, 1, 'K', 12]

Fe
###Comment on "Tuning low-energy scales in YbRh$_2$Si$_2$ by non-isoelectronic substitution and pressure"|Steffen Wirth,Silke Paschen,Qimiao Si,Frank Steglich###
(1848668, 1848668)
 Research 1, 032004 (2019)] reportedmeasurements of the isothermal magnetoresistance of Fe- and Ni-substitutedYbRh2Si2, based on which they raised questions about the Kondodestruction description for the magnetic field-induced quantum critical point(Q<missing VAR>CP) of pristine YbRh2Si2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 1, ',', 3],[25.0, 1, ',', 0],[383.0, 30, 'mK', 8],[386.0, 1, 'K', 8]

Ni
###Comment on "Tuning low-energy scales in YbRh$_2$Si$_2$ by non-isoelectronic substitution and pressure"|Steffen Wirth,Silke Paschen,Qimiao Si,Frank Steglich###
(1848673, 1848673)
 Research 1, 032004 (2019)] reportedmeasurements of the isothermal magnetoresistance of Fe- and Ni-substitutedYbRh2Si2, based on which they raised questions about the Kondodestruction description for the magnetic field-induced quantum critical point(Q<missing VAR>CP) of pristine YbRh2Si2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, 1, ',', 3],[30.0, 1, ',', 0],[378.0, 30, 'mK', 8],[381.0, 1, 'K', 8]

YbRh2Si2
###Comment on "Tuning low-energy scales in YbRh$_2$Si$_2$ by non-isoelectronic substitution and pressure"|Steffen Wirth,Silke Paschen,Qimiao Si,Frank Steglich###
(1848678, 1848682)
 Research 1, 032004 (2019)] reportedmeasurements of the isothermal magnetoresistance of Fe- and Ni-substitutedYbRh2Si2, based on which they raised questions about the Kondodestruction description for the magnetic field-induced quantum critical point(Q<missing VAR>CP) of pristine YbRh2Si2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 1, ',', 3],[35.0, 1, ',', 0],[369.0, 30, 'mK', 8],[372.0, 1, 'K', 8]

P
###Comment on "Tuning low-energy scales in YbRh$_2$Si$_2$ by non-isoelectronic substitution and pressure"|Steffen Wirth,Silke Paschen,Qimiao Si,Frank Steglich###
(1848728, 1848728)
 Research 1, 032004 (2019)] reportedmeasurements of the isothermal magnetoresistance of Fe- and Ni-substitutedYbRh2Si2, based on which they raised questions about the Kondodestruction description for the magnetic field-induced quantum critical point(Q<missing VAR>CP) of pristine YbRh2Si2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[104.0, 1, ',', 3],[85.0, 1, ',', 0],[323.0, 30, 'mK', 8],[326.0, 1, 'K', 8]

YbRh2Si2
###Comment on "Tuning low-energy scales in YbRh$_2$Si$_2$ by non-isoelectronic substitution and pressure"|Steffen Wirth,Silke Paschen,Qimiao Si,Frank Steglich###
(1848735, 1848739)
 Research 1, 032004 (2019)] reportedmeasurements of the isothermal magnetoresistance of Fe- and Ni-substitutedYbRh2Si2, based on which they raised questions about the Kondodestruction description for the magnetic field-induced quantum critical point(Q<missing VAR>CP) of pristine YbRh2Si2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 1, ',', 3],[92.0, 1, ',', 0],[312.0, 30, 'mK', 8],[315.0, 1, 'K', 8]

YbRh2Si2
###Comment on "Tuning low-energy scales in YbRh$_2$Si$_2$ by non-isoelectronic substitution and pressure"|Steffen Wirth,Silke Paschen,Qimiao Si,Frank Steglich###
(1848769, 1848773)
 Firstly, as shownby studies on pristine YbRh2Si2 in Paschen et al.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 1, ',', 5],[126.0, 1, ',', 2],[278.0, 30, 'mK', 6],[281.0, 1, 'K', 6]

CP
###Comment on "Tuning low-energy scales in YbRh$_2$Si$_2$ by non-isoelectronic substitution and pressure"|Steffen Wirth,Silke Paschen,Qimiao Si,Frank Steglich###
(1848839, 1848840)
,isothermal crossed-field and single-field Hall effect measurements arenecessary to ascertain the evolution of the Fermi surface across this Q<missing VAR>CP.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[215.0, 1, ',', 7],[196.0, 1, ',', 4],[211.0, 30, 'mK', 4],[214.0, 1, 'K', 4]

Fe
###Comment on "Tuning low-energy scales in YbRh$_2$Si$_2$ by non-isoelectronic substitution and pressure"|Steffen Wirth,Silke Paschen,Qimiao Si,Frank Steglich###
(1848873, 1848873)
 did not carry out such measurements, their results onFe- and Ni-substituted YbRh2Si2 cannot be used to assess the validity ofthe Kondo destruction picture neither for substituted nor for pristineYbRh2Si2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[249.0, 1, ',', 9],[230.0, 1, ',', 6],[178.0, 30, 'mK', 2],[181.0, 1, 'K', 2]

Ni
###Comment on "Tuning low-energy scales in YbRh$_2$Si$_2$ by non-isoelectronic substitution and pressure"|Steffen Wirth,Silke Paschen,Qimiao Si,Frank Steglich###
(1848878, 1848878)
 did not carry out such measurements, their results onFe- and Ni-substituted YbRh2Si2 cannot be used to assess the validity ofthe Kondo destruction picture neither for substituted nor for pristineYbRh2Si2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[254.0, 1, ',', 9],[235.0, 1, ',', 6],[173.0, 30, 'mK', 2],[176.0, 1, 'K', 2]

YbRh2Si2
###Comment on "Tuning low-energy scales in YbRh$_2$Si$_2$ by non-isoelectronic substitution and pressure"|Steffen Wirth,Silke Paschen,Qimiao Si,Frank Steglich###
(1848882, 1848886)
 did not carry out such measurements, their results onFe- and Ni-substituted YbRh2Si2 cannot be used to assess the validity ofthe Kondo destruction picture neither for substituted nor for pristineYbRh2Si2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[258.0, 1, ',', 9],[239.0, 1, ',', 6],[165.0, 30, 'mK', 2],[168.0, 1, 'K', 2]

YbRh2Si2
###Comment on "Tuning low-energy scales in YbRh$_2$Si$_2$ by non-isoelectronic substitution and pressure"|Steffen Wirth,Silke Paschen,Qimiao Si,Frank Steglich###
(1848926, 1848930)
 did not carry out such measurements, their results onFe- and Ni-substituted YbRh2Si2 cannot be used to assess the validity ofthe Kondo destruction picture neither for substituted nor for pristineYbRh2Si2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[302.0, 1, ',', 9],[283.0, 1, ',', 6],[121.0, 30, 'mK', 2],[124.0, 1, 'K', 2]

YbRh2Si2
###Comment on "Tuning low-energy scales in YbRh$_2$Si$_2$ by non-isoelectronic substitution and pressure"|Steffen Wirth,Silke Paschen,Qimiao Si,Frank Steglich###
(1848966, 1848970)
 onthe isothermal crossover of YbRh2Si2, they did not recognize theimplications of the crossover width, quantified by the full width at halfmaximum (FWHM), being linear in temperature, with zero offset, over about 1.5decades in temperature, from 30 mK to 1 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[342.0, 1, ',', 11],[323.0, 1, ',', 8],[81.0, 30, 'mK', 0],[84.0, 1, 'K', 0]

FWH
###Comment on "Tuning low-energy scales in YbRh$_2$Si$_2$ by non-isoelectronic substitution and pressure"|Steffen Wirth,Silke Paschen,Qimiao Si,Frank Steglich###
(1849013, 1849015)
 onthe isothermal crossover of YbRh2Si2, they did not recognize theimplications of the crossover width, quantified by the full width at halfmaximum (FWHM), being linear in temperature, with zero offset, over about 1.5decades in temperature, from 30 mK to 1 K.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[389.0, 1, ',', 11],[370.0, 1, ',', 8],[36.0, 30, 'mK', 0],[39.0, 1, 'K', 0]

FWH
###Comment on "Tuning low-energy scales in YbRh$_2$Si$_2$ by non-isoelectronic substitution and pressure"|Steffen Wirth,Silke Paschen,Qimiao Si,Frank Steglich###
(1849073, 1849075)
 Finally, in claiming deviations ofHall crossover FWHM<missing VAR> data of Friedemann et al.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[449.0, 1, ',', 12],[430.0, 1, ',', 9],[22.0, 30, 'mK', 1],[19.0, 1, 'K', 1]

As
###Comment on "Tuning low-energy scales in YbRh$_2$Si$_2$ by non-isoelectronic substitution and pressure"|Steffen Wirth,Silke Paschen,Qimiao Si,Frank Steglich###
(1849181, 1849181)
 As such they cannotinvalidate the evidence that has been reported for Kondo destruction quantumcriticality in YbRh2Si2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[557.0, 1, ',', 17],[538.0, 1, ',', 14],[130.0, 30, 'mK', 6],[127.0, 1, 'K', 6]

YbRh2Si2
###Comment on "Tuning low-energy scales in YbRh$_2$Si$_2$ by non-isoelectronic substitution and pressure"|Steffen Wirth,Silke Paschen,Qimiao Si,Frank Steglich###
(1849217, 1849221)
 As such they cannotinvalidate the evidence that has been reported for Kondo destruction quantumcriticality in YbRh2Si2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[593.0, 1, ',', 17],[574.0, 1, ',', 14],[166.0, 30, 'mK', 6],[163.0, 1, 'K', 6]

Fe
###Magnetoresistance and spintronic anisotropy induced by spin excitations along molecular spin chains|K. Katcko,E. Urbain,L. Kandpal,B. Chowrira,F. Schleicher,U. Halisdemir,F. Ngassamnyakam,D. Mertz,B. Leconte,N. Beyer,D. Spor,P. Panissod,A. Boulard,J. Arabski,C. Kieber,E. Sternitsky,V. Da Costa,M. Alouani,M. Hehn,F. Montaigne,A. Bahouka,W. Weber,E. Beaurepaire,D. Lacour,S. Boukari,M. Bowen###
(1849565, 1849565)
 Weve developed alow-tech, resist- and solvent-free technological process that can craftnanopillar devices from entire in-situ grown heterostructures, and use it tostudy magnetotransport between two Fe and Co ferromagnetic electrodes across afunctional magnetic CoPc molecular layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[196.0, 5.9, 'meV', 4]

Co
###Magnetoresistance and spintronic anisotropy induced by spin excitations along molecular spin chains|K. Katcko,E. Urbain,L. Kandpal,B. Chowrira,F. Schleicher,U. Halisdemir,F. Ngassamnyakam,D. Mertz,B. Leconte,N. Beyer,D. Spor,P. Panissod,A. Boulard,J. Arabski,C. Kieber,E. Sternitsky,V. Da Costa,M. Alouani,M. Hehn,F. Montaigne,A. Bahouka,W. Weber,E. Beaurepaire,D. Lacour,S. Boukari,M. Bowen###
(1849569, 1849569)
 Weve developed alow-tech, resist- and solvent-free technological process that can craftnanopillar devices from entire in-situ grown heterostructures, and use it tostudy magnetotransport between two Fe and Co ferromagnetic electrodes across afunctional magnetic CoPc molecular layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[192.0, 5.9, 'meV', 4]

Co
###Magnetoresistance and spintronic anisotropy induced by spin excitations along molecular spin chains|K. Katcko,E. Urbain,L. Kandpal,B. Chowrira,F. Schleicher,U. Halisdemir,F. Ngassamnyakam,D. Mertz,B. Leconte,N. Beyer,D. Spor,P. Panissod,A. Boulard,J. Arabski,C. Kieber,E. Sternitsky,V. Da Costa,M. Alouani,M. Hehn,F. Montaigne,A. Bahouka,W. Weber,E. Beaurepaire,D. Lacour,S. Boukari,M. Bowen###
(1849584, 1849584)
 Weve developed alow-tech, resist- and solvent-free technological process that can craftnanopillar devices from entire in-situ grown heterostructures, and use it tostudy magnetotransport between two Fe and Co ferromagnetic electrodes across afunctional magnetic CoPc molecular layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[177.0, 5.9, 'meV', 4]

Co
###Magnetoresistance and spintronic anisotropy induced by spin excitations along molecular spin chains|K. Katcko,E. Urbain,L. Kandpal,B. Chowrira,F. Schleicher,U. Halisdemir,F. Ngassamnyakam,D. Mertz,B. Leconte,N. Beyer,D. Spor,P. Panissod,A. Boulard,J. Arabski,C. Kieber,E. Sternitsky,V. Da Costa,M. Alouani,M. Hehn,F. Montaigne,A. Bahouka,W. Weber,E. Beaurepaire,D. Lacour,S. Boukari,M. Bowen###
(1849607, 1849607)
 We observe how spin-flip transportacross CoPc molecular spin chains promotes a specific magnetoresistance effect,and alters the nanojunctions<missing VAR> magnetism through spintronic anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 5.9, 'meV', 3]

In
###Magnetoresistance and spintronic anisotropy induced by spin excitations along molecular spin chains|K. Katcko,E. Urbain,L. Kandpal,B. Chowrira,F. Schleicher,U. Halisdemir,F. Ngassamnyakam,D. Mertz,B. Leconte,N. Beyer,D. Spor,P. Panissod,A. Boulard,J. Arabski,C. Kieber,E. Sternitsky,V. Da Costa,M. Alouani,M. Hehn,F. Montaigne,A. Bahouka,W. Weber,E. Beaurepaire,D. Lacour,S. Boukari,M. Bowen###
(1849646, 1849646)
 In theprocess, we identify three magnetic units along the effective nanotransportpath thanks to a macrospin model of magnetotransport.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[115.0, 5.9, 'meV', 2]

Fe
###Magnetoresistance and spintronic anisotropy induced by spin excitations along molecular spin chains|K. Katcko,E. Urbain,L. Kandpal,B. Chowrira,F. Schleicher,U. Halisdemir,F. Ngassamnyakam,D. Mertz,B. Leconte,N. Beyer,D. Spor,P. Panissod,A. Boulard,J. Arabski,C. Kieber,E. Sternitsky,V. Da Costa,M. Alouani,M. Hehn,F. Montaigne,A. Bahouka,W. Weber,E. Beaurepaire,D. Lacour,S. Boukari,M. Bowen###
(1849778, 1849778)
 We notably measure a 5.9meV energy threshold formagnetic decoupling between the Fe layers<missing VAR> buried atoms and those in contactwith the CoPc layer forming the so-called spinterface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 5.9, 'meV', 0]

Co
###Magnetoresistance and spintronic anisotropy induced by spin excitations along molecular spin chains|K. Katcko,E. Urbain,L. Kandpal,B. Chowrira,F. Schleicher,U. Halisdemir,F. Ngassamnyakam,D. Mertz,B. Leconte,N. Beyer,D. Spor,P. Panissod,A. Boulard,J. Arabski,C. Kieber,E. Sternitsky,V. Da Costa,M. Alouani,M. Hehn,F. Montaigne,A. Bahouka,W. Weber,E. Beaurepaire,D. Lacour,S. Boukari,M. Bowen###
(1849800, 1849800)
 We notably measure a 5.9meV energy threshold formagnetic decoupling between the Fe layers<missing VAR> buried atoms and those in contactwith the CoPc layer forming the so-called spinterface.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 5.9, 'meV', 0]

N
###Multi-GMR sensors controlled by additive dipolar coupling|J. Torrejon,A. Solignac,C. Chopin,J. Moulin,A. Doll,E. Paul,C. Fermon,M. Pannetier-Lecoeur###
(1850031, 1850031)
 From magnetotransport measurements, two differentresistance responses have been observed with a crossover around 5 GMRrepetitions step-like (N<5) and linear (N>5) behavior, respectively.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 12, 'repetitions', 1],[10.0, 5, 'GMR', 0]

N
###Multi-GMR sensors controlled by additive dipolar coupling|J. Torrejon,A. Solignac,C. Chopin,J. Moulin,A. Doll,E. Paul,C. Fermon,M. Pannetier-Lecoeur###
(1850041, 1850041)
 From magnetotransport measurements, two differentresistance responses have been observed with a crossover around 5 GMRrepetitions step-like (N<5) and linear (N>5) behavior, respectively.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[73.0, 12, 'repetitions', 1],[20.0, 5, 'GMR', 0]

N
###Multi-GMR sensors controlled by additive dipolar coupling|J. Torrejon,A. Solignac,C. Chopin,J. Moulin,A. Doll,E. Paul,C. Fermon,M. Pannetier-Lecoeur###
(1850120, 1850120)
 With thehelp of micromagnetic simulations, we have analyzed in detail the two mainmagnetic mechanisms the Neel coupling distribution induced by the roughnesspropagation and the additive dipolar coupling between the N free layers.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 12, 'repetitions', 2],[99.0, 5, 'GMR', 1]

(N)
###Multi-GMR sensors controlled by additive dipolar coupling|J. Torrejon,A. Solignac,C. Chopin,J. Moulin,A. Doll,E. Paul,C. Fermon,M. Pannetier-Lecoeur###
(1850160, 1850162)
Furthermore we have correlated the dipolar coupling mechanism, controlled bythe number of GMRs (N) and lateral dimensions (width), to the sensorperformance (sensitivity, noise and detectivity) in good agreement withanalytical theory.
Featurization successful!
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[192.0, 12, 'repetitions', 3],[139.0, 5, 'GMR', 2]

N
###Multi-GMR sensors controlled by additive dipolar coupling|J. Torrejon,A. Solignac,C. Chopin,J. Moulin,A. Doll,E. Paul,C. Fermon,M. Pannetier-Lecoeur###
(1850230, 1850230)
 The noise roughly decreases in multi-GMRs as 1/sqrtN inboth regimes (low frequency 1/f<missing VAR> and thermal noise).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[262.0, 12, 'repetitions', 4],[209.0, 5, 'GMR', 3]

N
###Multi-GMR sensors controlled by additive dipolar coupling|J. Torrejon,A. Solignac,C. Chopin,J. Moulin,A. Doll,E. Paul,C. Fermon,M. Pannetier-Lecoeur###
(1850276, 1850276)
 The sensitivity is evenstronger reduced, scaling as 1/N, in the strong dipolar regime (narrow devices)while converges to a constant value in the weak dipolar regime (wide devices).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[308.0, 12, 'repetitions', 5],[255.0, 5, 'GMR', 4]

N
###Multi-GMR sensors controlled by additive dipolar coupling|J. Torrejon,A. Solignac,C. Chopin,J. Moulin,A. Doll,E. Paul,C. Fermon,M. Pannetier-Lecoeur###
(1850345, 1850345)
Very interestingly, they are more robust against undesirable RTN noise thansingle GMRs at high voltages and the linearity can be extended towards muchlarger magnetic field range without dealing with the size and the reduction ofGMR ratio.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[377.0, 12, 'repetitions', 6],[324.0, 5, 'GMR', 5]

NbSe2
###Unexpected two-fold symmetric superconductivity in few-layer NbSe$_2$|Alex Hamill,Brett Heischmidt,Egon Sohn,Daniel Shaffer,Kan-Ting Tsai,Xi Zhang,Xiaoxiang Xi,Alexey Suslov,Helmuth Berger,László Forró,Fiona J. Burnell,Jie Shan,Kin Fai Mak,Rafael M. Fernandes,Ke Wang,Vlad S. Pribiag###
(1850524, 1850526)
Unexpected two-fold symmetric superconductivity in few-layer NbSe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[589.0, 2, 'D', 9]

Ds
###Unexpected two-fold symmetric superconductivity in few-layer NbSe$_2$|Alex Hamill,Brett Heischmidt,Egon Sohn,Daniel Shaffer,Kan-Ting Tsai,Xi Zhang,Xiaoxiang Xi,Alexey Suslov,Helmuth Berger,László Forró,Fiona J. Burnell,Jie Shan,Kin Fai Mak,Rafael M. Fernandes,Ke Wang,Vlad S. Pribiag###
(1850542, 1850542)
 Two-dimensional transition metal dichalcogenides (TMDs) have been attractingsignificant interest due to a range of properties, such as layer-dependentinversion symmetry, valley-contrasted Berry curvatures, and strong spin-orbitcoupling (SOC).
EXCEPTION 3: IndexError for Ds
(SOC)
[573.0, 2, 'D', 8]

Ba
###Evidence of Ba substitution induced spin-canting in the magnetic Weyl semimetal EuCd$_2$As$_2$|L. D. Sanjeewa,J. Xing,K. M. Taddei,D. Parker,R. Custelcean,D. dela Cruz,A. S. Sefat###
(1851132, 1851132)
Evidence of Ba substitution induced spin-canting in the magnetic Weyl semimetal EuCd2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[249.0, -10, '%', 4]

EuCd2As2
###Evidence of Ba substitution induced spin-canting in the magnetic Weyl semimetal EuCd$_2$As$_2$|L. D. Sanjeewa,J. Xing,K. M. Taddei,D. Parker,R. Custelcean,D. dela Cruz,A. S. Sefat###
(1851152, 1851156)
Evidence of Ba substitution induced spin-canting in the magnetic Weyl semimetal EuCd2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[225.0, -10, '%', 4]

EuCd2As2
###Evidence of Ba substitution induced spin-canting in the magnetic Weyl semimetal EuCd$_2$As$_2$|L. D. Sanjeewa,J. Xing,K. M. Taddei,D. Parker,R. Custelcean,D. dela Cruz,A. S. Sefat###
(1851161, 1851165)
 Recently EuCd2As2 was predicted to be a magnetic Weyl semi-metal with alone pair of Weyl nodes generated by A-type antiferromagnetism and protected bya rotational symmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[216.0, -10, '%', 3]

In
###Evidence of Ba substitution induced spin-canting in the magnetic Weyl semimetal EuCd$_2$As$_2$|L. D. Sanjeewa,J. Xing,K. M. Taddei,D. Parker,R. Custelcean,D. dela Cruz,A. S. Sefat###
(1851286, 1851286)
 In this work wetest this prediction by synthesizing a series of Eu1-xBax<missing VAR>Cd2As2single crystals and studying their structural, magnetic and transportproperties via both experimental techniques and first-principles calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, -10, '%', 1]

Eu1-xBa
###Evidence of Ba substitution induced spin-canting in the magnetic Weyl semimetal EuCd$_2$As$_2$|L. D. Sanjeewa,J. Xing,K. M. Taddei,D. Parker,R. Custelcean,D. dela Cruz,A. S. Sefat###
(1851311, 1851315)
 In this work wetest this prediction by synthesizing a series of Eu1-xBax<missing VAR>Cd2As2single crystals and studying their structural, magnetic and transportproperties via both experimental techniques and first-principles calculations.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[66.0, -10, '%', 1]

Cd2As2
###Evidence of Ba substitution induced spin-canting in the magnetic Weyl semimetal EuCd$_2$As$_2$|L. D. Sanjeewa,J. Xing,K. M. Taddei,D. Parker,R. Custelcean,D. dela Cruz,A. S. Sefat###
(1851317, 1851320)
 In this work wetest this prediction by synthesizing a series of Eu1-xBax<missing VAR>Cd2As2single crystals and studying their structural, magnetic and transportproperties via both experimental techniques and first-principles calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, -10, '%', 1]

Ba
###Evidence of Ba substitution induced spin-canting in the magnetic Weyl semimetal EuCd$_2$As$_2$|L. D. Sanjeewa,J. Xing,K. M. Taddei,D. Parker,R. Custelcean,D. dela Cruz,A. S. Sefat###
(1851375, 1851375)
We find that small concentrations of Ba (sim 3-10% ) lead to a smallout-of-plane canting of the Eu moment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[6.0, -10, '%', 0]

Eu
###Evidence of Ba substitution induced spin-canting in the magnetic Weyl semimetal EuCd$_2$As$_2$|L. D. Sanjeewa,J. Xing,K. M. Taddei,D. Parker,R. Custelcean,D. dela Cruz,A. S. Sefat###
(1851408, 1851408)
We find that small concentrations of Ba (sim 3-10% ) lead to a smallout-of-plane canting of the Eu moment.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, -10, '%', 0]

EuCd2As2
###Evidence of Ba substitution induced spin-canting in the magnetic Weyl semimetal EuCd$_2$As$_2$|L. D. Sanjeewa,J. Xing,K. M. Taddei,D. Parker,R. Custelcean,D. dela Cruz,A. S. Sefat###
(1851624, 1851628)
 Careful density functional theory calculations using anall-electron approach revise prior predictions finding a purely ferromagneticground state with in-plane moments for both the EuCd2As2 andEu0.5Ba0.5Cd2As2 compounds - corroborating our experimentalfindings.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[243.0, -10, '%', 4]

Eu0.5Ba0.5Cd2As2
###Evidence of Ba substitution induced spin-canting in the magnetic Weyl semimetal EuCd$_2$As$_2$|L. D. Sanjeewa,J. Xing,K. M. Taddei,D. Parker,R. Custelcean,D. dela Cruz,A. S. Sefat###
(1851633, 1851640)
 Careful density functional theory calculations using anall-electron approach revise prior predictions finding a purely ferromagneticground state with in-plane moments for both the EuCd2As2 andEu0.5Ba0.5Cd2As2 compounds - corroborating our experimentalfindings.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[252.0, -10, '%', 4]

Ba
###Evidence of Ba substitution induced spin-canting in the magnetic Weyl semimetal EuCd$_2$As$_2$|L. D. Sanjeewa,J. Xing,K. M. Taddei,D. Parker,R. Custelcean,D. dela Cruz,A. S. Sefat###
(1851664, 1851664)
 This work suggests that Ba substitution can tune the magneticproperties in unexpected ways which correlate to changes in measures oftopological properties, encouraging future work to locate the ideal Baconcentration for Eu moment canting.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[283.0, -10, '%', 5]

Ba
###Evidence of Ba substitution induced spin-canting in the magnetic Weyl semimetal EuCd$_2$As$_2$|L. D. Sanjeewa,J. Xing,K. M. Taddei,D. Parker,R. Custelcean,D. dela Cruz,A. S. Sefat###
(1851719, 1851719)
 This work suggests that Ba substitution can tune the magneticproperties in unexpected ways which correlate to changes in measures oftopological properties, encouraging future work to locate the ideal Baconcentration for Eu moment canting.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[338.0, -10, '%', 5]

Eu
###Evidence of Ba substitution induced spin-canting in the magnetic Weyl semimetal EuCd$_2$As$_2$|L. D. Sanjeewa,J. Xing,K. M. Taddei,D. Parker,R. Custelcean,D. dela Cruz,A. S. Sefat###
(1851726, 1851726)
 This work suggests that Ba substitution can tune the magneticproperties in unexpected ways which correlate to changes in measures oftopological properties, encouraging future work to locate the ideal Baconcentration for Eu moment canting.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[345.0, -10, '%', 5]

B
###Transport properties of organic Dirac electron system α-(BEDT-TSeF)$_2$I$_3$|Daigo Ohki,Kazuyoshi Yoshimi,Akito Kobayashi###
(1851757, 1851757)
Transport properties of organic Dirac electron system -(BEDT-T<missing VAR>SeF)2I3.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[81.0, 30, 'K', 1]

F
###Transport properties of organic Dirac electron system α-(BEDT-TSeF)$_2$I$_3$|Daigo Ohki,Kazuyoshi Yoshimi,Akito Kobayashi###
(1851764, 1851764)
Transport properties of organic Dirac electron system -(BEDT-T<missing VAR>SeF)2I3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 30, 'K', 1]

I3
###Transport properties of organic Dirac electron system α-(BEDT-TSeF)$_2$I$_3$|Daigo Ohki,Kazuyoshi Yoshimi,Akito Kobayashi###
(1851767, 1851768)
Transport properties of organic Dirac electron system -(BEDT-T<missing VAR>SeF)2I3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 30, 'K', 1]

B
###Transport properties of organic Dirac electron system α-(BEDT-TSeF)$_2$I$_3$|Daigo Ohki,Kazuyoshi Yoshimi,Akito Kobayashi###
(1851786, 1851786)
 Motivated by the insulating behavior of alpha-(BEDT-T<missing VAR>SeF)2I3 at lowtemperatures (Ts), we first performed first-principles calculations based onthe crystal structural data at 30 K under ambient pressure, and we constructeda two-dimensional effective model using maximally localized Wannier functions.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[52.0, 30, 'K', 0]

F
###Transport properties of organic Dirac electron system α-(BEDT-TSeF)$_2$I$_3$|Daigo Ohki,Kazuyoshi Yoshimi,Akito Kobayashi###
(1851793, 1851793)
 Motivated by the insulating behavior of alpha-(BEDT-T<missing VAR>SeF)2I3 at lowtemperatures (Ts), we first performed first-principles calculations based onthe crystal structural data at 30 K under ambient pressure, and we constructeda two-dimensional effective model using maximally localized Wannier functions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[45.0, 30, 'K', 0]

I3
###Transport properties of organic Dirac electron system α-(BEDT-TSeF)$_2$I$_3$|Daigo Ohki,Kazuyoshi Yoshimi,Akito Kobayashi###
(1851796, 1851797)
 Motivated by the insulating behavior of alpha-(BEDT-T<missing VAR>SeF)2I3 at lowtemperatures (Ts), we first performed first-principles calculations based onthe crystal structural data at 30 K under ambient pressure, and we constructeda two-dimensional effective model using maximally localized Wannier functions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[41.0, 30, 'K', 0]

As
###Transport properties of organic Dirac electron system α-(BEDT-TSeF)$_2$I$_3$|Daigo Ohki,Kazuyoshi Yoshimi,Akito Kobayashi###
(1851876, 1851876)
As possible causes of the insulating behavior, we studied the effects of theon-site Coulomb interaction U and spin-orbit interaction (SOI) byinvestigating the electronic state and the transport coefficient using theHartree approximation and the T<missing VAR>-matrix approximation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 30, 'K', 1]

U
###Transport properties of organic Dirac electron system α-(BEDT-TSeF)$_2$I$_3$|Daigo Ohki,Kazuyoshi Yoshimi,Akito Kobayashi###
(1851912, 1851912)
As possible causes of the insulating behavior, we studied the effects of theon-site Coulomb interaction U and spin-orbit interaction (SOI) byinvestigating the electronic state and the transport coefficient using theHartree approximation and the T<missing VAR>-matrix approximation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 30, 'K', 1]

(SOI)
###Transport properties of organic Dirac electron system α-(BEDT-TSeF)$_2$I$_3$|Daigo Ohki,Kazuyoshi Yoshimi,Akito Kobayashi###
(1851922, 1851926)
As possible causes of the insulating behavior, we studied the effects of theon-site Coulomb interaction U and spin-orbit interaction (SOI) byinvestigating the electronic state and the transport coefficient using theHartree approximation and the T<missing VAR>-matrix approximation.
Featurization successful!
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 30, 'K', 1]

S
###Transport properties of organic Dirac electron system α-(BEDT-TSeF)$_2$I$_3$|Daigo Ohki,Kazuyoshi Yoshimi,Akito Kobayashi###
(1851997, 1851997)
 The calculations at afinite T<missing VAR> demonstrated that a spin-ordered massive Dirac electron (SMD)appeared due to the on-site Coulomb interaction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[159.0, 30, 'K', 2]

U
###Transport properties of organic Dirac electron system α-(BEDT-TSeF)$_2$I$_3$|Daigo Ohki,Kazuyoshi Yoshimi,Akito Kobayashi###
(1852041, 1852041)
 We had an interest in theanomalous competitive effect with U and SOI when the SMD phase is present inalpha-(BETS)2I3, and we investigated these contributions to theelectronic state and conductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0
[203.0, 30, 'K', 3]

SOI
###Transport properties of organic Dirac electron system α-(BEDT-TSeF)$_2$I$_3$|Daigo Ohki,Kazuyoshi Yoshimi,Akito Kobayashi###
(1852045, 1852047)
 We had an interest in theanomalous competitive effect with U and SOI when the SMD phase is present inalpha-(BETS)2I3, and we investigated these contributions to theelectronic state and conductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[207.0, 30, 'K', 3]

S
###Transport properties of organic Dirac electron system α-(BEDT-TSeF)$_2$I$_3$|Daigo Ohki,Kazuyoshi Yoshimi,Akito Kobayashi###
(1852053, 1852053)
 We had an interest in theanomalous competitive effect with U and SOI when the SMD phase is present inalpha-(BETS)2I3, and we investigated these contributions to theelectronic state and conductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[215.0, 30, 'K', 3]

B
###Transport properties of organic Dirac electron system α-(BEDT-TSeF)$_2$I$_3$|Daigo Ohki,Kazuyoshi Yoshimi,Akito Kobayashi###
(1852069, 1852069)
 We had an interest in theanomalous competitive effect with U and SOI when the SMD phase is present inalpha-(BETS)2I3, and we investigated these contributions to theelectronic state and conductivity.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[231.0, 30, 'K', 3]

S
###Transport properties of organic Dirac electron system α-(BEDT-TSeF)$_2$I$_3$|Daigo Ohki,Kazuyoshi Yoshimi,Akito Kobayashi###
(1852072, 1852072)
 We had an interest in theanomalous competitive effect with U and SOI when the SMD phase is present inalpha-(BETS)2I3, and we investigated these contributions to theelectronic state and conductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[234.0, 30, 'K', 3]

I3
###Transport properties of organic Dirac electron system α-(BEDT-TSeF)$_2$I$_3$|Daigo Ohki,Kazuyoshi Yoshimi,Akito Kobayashi###
(1852075, 1852076)
 We had an interest in theanomalous competitive effect with U and SOI when the SMD phase is present inalpha-(BETS)2I3, and we investigated these contributions to theelectronic state and conductivity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[237.0, 30, 'K', 3]

S
###Transport properties of organic Dirac electron system α-(BEDT-TSeF)$_2$I$_3$|Daigo Ohki,Kazuyoshi Yoshimi,Akito Kobayashi###
(1852105, 1852105)
 The SMD is not a conventional spin order,but it exhibits the spin-valley Hall effect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[267.0, 30, 'K', 4]

SOI
###Transport properties of organic Dirac electron system α-(BEDT-TSeF)$_2$I$_3$|Daigo Ohki,Kazuyoshi Yoshimi,Akito Kobayashi###
(1852237, 1852239)
 However, when considering the SOI alone, the state changed to atopological insulator phase, and the electrical resistivity is saturated byedge conduction at quite low T<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[399.0, 30, 'K', 7]

S
###Transport properties of organic Dirac electron system α-(BEDT-TSeF)$_2$I$_3$|Daigo Ohki,Kazuyoshi Yoshimi,Akito Kobayashi###
(1852298, 1852298)
 When considering both the SMD and the SOI,the spin order gap was suppressed by the SOI, and gaps with different sizesopened in the left and right Dirac cones.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[460.0, 30, 'K', 8]

SOI
###Transport properties of organic Dirac electron system α-(BEDT-TSeF)$_2$I$_3$|Daigo Ohki,Kazuyoshi Yoshimi,Akito Kobayashi###
(1852306, 1852308)
 When considering both the SMD and the SOI,the spin order gap was suppressed by the SOI, and gaps with different sizesopened in the left and right Dirac cones.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[468.0, 30, 'K', 8]

SOI
###Transport properties of organic Dirac electron system α-(BEDT-TSeF)$_2$I$_3$|Daigo Ohki,Kazuyoshi Yoshimi,Akito Kobayashi###
(1852328, 1852330)
 When considering both the SMD and the SOI,the spin order gap was suppressed by the SOI, and gaps with different sizesopened in the left and right Dirac cones.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[490.0, 30, 'K', 8]

Al2O3
###Influence of the vicinal substrate miscut on the anisotropic two-dimensional electronic transport in Al2O3-SrTiO3 heterostructures|Karsten Wolff,Roland Schäfer,Daniel Arnold,Rudolf Schneider,Matthieu Le Tacon,Dirk Fuchs###
(1852439, 1852442)
Influence of the vicinal substrate miscut on the anisotropic two-dimensional electronic transport in Al2O3-SrTiO3 heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 2, 'DES', 2],[544.0, 2, 'D', 10]

SrTiO3
###Influence of the vicinal substrate miscut on the anisotropic two-dimensional electronic transport in Al2O3-SrTiO3 heterostructures|Karsten Wolff,Roland Schäfer,Daniel Arnold,Rudolf Schneider,Matthieu Le Tacon,Dirk Fuchs###
(1852444, 1852447)
Influence of the vicinal substrate miscut on the anisotropic two-dimensional electronic transport in Al2O3-SrTiO3 heterostructures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[123.0, 2, 'DES', 2],[539.0, 2, 'D', 10]

S
###Influence of the vicinal substrate miscut on the anisotropic two-dimensional electronic transport in Al2O3-SrTiO3 heterostructures|Karsten Wolff,Roland Schäfer,Daniel Arnold,Rudolf Schneider,Matthieu Le Tacon,Dirk Fuchs###
(1852474, 1852474)
 The electrical resistance of the two-dimensional electron system (2DES) whichforms at the interface of SrTiO3 (ST<missing VAR>O)-based heterostructures displaysanisotropic transport with respect to the direction of current flow at lowtemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 2, 'DES', 1],[512.0, 2, 'D', 9]

SrTiO3
###Influence of the vicinal substrate miscut on the anisotropic two-dimensional electronic transport in Al2O3-SrTiO3 heterostructures|Karsten Wolff,Roland Schäfer,Daniel Arnold,Rudolf Schneider,Matthieu Le Tacon,Dirk Fuchs###
(1852490, 1852493)
 The electrical resistance of the two-dimensional electron system (2DES) whichforms at the interface of SrTiO3 (ST<missing VAR>O)-based heterostructures displaysanisotropic transport with respect to the direction of current flow at lowtemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 2, 'DES', 1],[493.0, 2, 'D', 9]

S
###Influence of the vicinal substrate miscut on the anisotropic two-dimensional electronic transport in Al2O3-SrTiO3 heterostructures|Karsten Wolff,Roland Schäfer,Daniel Arnold,Rudolf Schneider,Matthieu Le Tacon,Dirk Fuchs###
(1852496, 1852496)
 The electrical resistance of the two-dimensional electron system (2DES) whichforms at the interface of SrTiO3 (ST<missing VAR>O)-based heterostructures displaysanisotropic transport with respect to the direction of current flow at lowtemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 2, 'DES', 1],[490.0, 2, 'D', 9]

O
###Influence of the vicinal substrate miscut on the anisotropic two-dimensional electronic transport in Al2O3-SrTiO3 heterostructures|Karsten Wolff,Roland Schäfer,Daniel Arnold,Rudolf Schneider,Matthieu Le Tacon,Dirk Fuchs###
(1852498, 1852498)
 The electrical resistance of the two-dimensional electron system (2DES) whichforms at the interface of SrTiO3 (ST<missing VAR>O)-based heterostructures displaysanisotropic transport with respect to the direction of current flow at lowtemperature.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 2, 'DES', 1],[488.0, 2, 'D', 9]

S
###Influence of the vicinal substrate miscut on the anisotropic two-dimensional electronic transport in Al2O3-SrTiO3 heterostructures|Karsten Wolff,Roland Schäfer,Daniel Arnold,Rudolf Schneider,Matthieu Le Tacon,Dirk Fuchs###
(1852559, 1852559)
 We have investigated the influence of terraces at the surface ofST<missing VAR>O substrates from which the 2DES are prepared.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 2, 'DES', 0],[427.0, 2, 'D', 8]

O
###Influence of the vicinal substrate miscut on the anisotropic two-dimensional electronic transport in Al2O3-SrTiO3 heterostructures|Karsten Wolff,Roland Schäfer,Daniel Arnold,Rudolf Schneider,Matthieu Le Tacon,Dirk Fuchs###
(1852561, 1852561)
 We have investigated the influence of terraces at the surface ofST<missing VAR>O substrates from which the 2DES are prepared.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 2, 'DES', 0],[425.0, 2, 'D', 8]

S
###Influence of the vicinal substrate miscut on the anisotropic two-dimensional electronic transport in Al2O3-SrTiO3 heterostructures|Karsten Wolff,Roland Schäfer,Daniel Arnold,Rudolf Schneider,Matthieu Le Tacon,Dirk Fuchs###
(1852594, 1852594)
 Such terraces are alwayspresent in commercially available ST<missing VAR>O substrates due to the tolerance ofsurface preparation which result in small miscut angles of the order of gamma 0.1deg with respect to the surface normal.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 2, 'DES', 1],[392.0, 2, 'D', 7]

O
###Influence of the vicinal substrate miscut on the anisotropic two-dimensional electronic transport in Al2O3-SrTiO3 heterostructures|Karsten Wolff,Roland Schäfer,Daniel Arnold,Rudolf Schneider,Matthieu Le Tacon,Dirk Fuchs###
(1852596, 1852596)
 Such terraces are alwayspresent in commercially available ST<missing VAR>O substrates due to the tolerance ofsurface preparation which result in small miscut angles of the order of gamma 0.1deg with respect to the surface normal.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[26.0, 2, 'DES', 1],[390.0, 2, 'D', 7]

S
###Influence of the vicinal substrate miscut on the anisotropic two-dimensional electronic transport in Al2O3-SrTiO3 heterostructures|Karsten Wolff,Roland Schäfer,Daniel Arnold,Rudolf Schneider,Matthieu Le Tacon,Dirk Fuchs###
(1852820, 1852820)
 However, the influence of gamma was notablyreduced by the occurrence of step-bunching and lattice-dislocations in the ST<missing VAR>Osubstrate material.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[250.0, 2, 'DES', 4],[166.0, 2, 'D', 4]

O
###Influence of the vicinal substrate miscut on the anisotropic two-dimensional electronic transport in Al2O3-SrTiO3 heterostructures|Karsten Wolff,Roland Schäfer,Daniel Arnold,Rudolf Schneider,Matthieu Le Tacon,Dirk Fuchs###
(1852822, 1852822)
 However, the influence of gamma was notablyreduced by the occurrence of step-bunching and lattice-dislocations in the ST<missing VAR>Osubstrate material.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[252.0, 2, 'DES', 4],[164.0, 2, 'D', 4]

ScFeGe
###Helical magnetic order and Fermi surface nesting in non-centrosymmetric ScFeGe|Sunil K. Karna,D. Tristant,J. K. Hebert,G. Cao,R. Chapai,W. A. Phelan,Q. Zhang,Y. Wu,C. Dhital,Y. Li,H. B. Cao,W. Tian,C. R. Dela Cruz,A. A. Aczel,O. Zaharko,A. Khasanov,M. A. McGuire,A. Roy,W. Xie,D. A. Browne,I. Vekhter,V. Meunier,W. A. Shelton,P. W. Adams,P. T. Sprunger,D. P. Young,R. Jin,J. F. DiTusa###
(1853059, 1853061)
Helical magnetic order and Fermi surface nesting in non-centrosymmetric ScFeGe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[445.0, 6.7, 'T', 6]

ScFeGe
###Helical magnetic order and Fermi surface nesting in non-centrosymmetric ScFeGe|Sunil K. Karna,D. Tristant,J. K. Hebert,G. Cao,R. Chapai,W. A. Phelan,Q. Zhang,Y. Wu,C. Dhital,Y. Li,H. B. Cao,W. Tian,C. R. Dela Cruz,A. A. Aczel,O. Zaharko,A. Khasanov,M. A. McGuire,A. Roy,W. Xie,D. A. Browne,I. Vekhter,V. Meunier,W. A. Shelton,P. W. Adams,P. T. Sprunger,D. P. Young,R. Jin,J. F. DiTusa###
(1853098, 1853100)
 An investigation of the structural, magnetic, thermodynamic, and chargetransport properties of non-centrosymmetric hexagonal ScFeGe reveals it to bean anisotropic metal with a transition to a weak itinerant incommensuratehelimagnetic state below T<missing VAR>N  36 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[406.0, 6.7, 'T', 5]

N
###Helical magnetic order and Fermi surface nesting in non-centrosymmetric ScFeGe|Sunil K. Karna,D. Tristant,J. K. Hebert,G. Cao,R. Chapai,W. A. Phelan,Q. Zhang,Y. Wu,C. Dhital,Y. Li,H. B. Cao,W. Tian,C. R. Dela Cruz,A. A. Aczel,O. Zaharko,A. Khasanov,M. A. McGuire,A. Roy,W. Xie,D. A. Browne,I. Vekhter,V. Meunier,W. A. Shelton,P. W. Adams,P. T. Sprunger,D. P. Young,R. Jin,J. F. DiTusa###
(1853141, 1853141)
 An investigation of the structural, magnetic, thermodynamic, and chargetransport properties of non-centrosymmetric hexagonal ScFeGe reveals it to bean anisotropic metal with a transition to a weak itinerant incommensuratehelimagnetic state below T<missing VAR>N  36 K.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[365.0, 6.7, 'T', 5]

K
###Helical magnetic order and Fermi surface nesting in non-centrosymmetric ScFeGe|Sunil K. Karna,D. Tristant,J. K. Hebert,G. Cao,R. Chapai,W. A. Phelan,Q. Zhang,Y. Wu,C. Dhital,Y. Li,H. B. Cao,W. Tian,C. R. Dela Cruz,A. A. Aczel,O. Zaharko,A. Khasanov,M. A. McGuire,A. Roy,W. Xie,D. A. Browne,I. Vekhter,V. Meunier,W. A. Shelton,P. W. Adams,P. T. Sprunger,D. P. Young,R. Jin,J. F. DiTusa###
(1853146, 1853146)
 An investigation of the structural, magnetic, thermodynamic, and chargetransport properties of non-centrosymmetric hexagonal ScFeGe reveals it to bean anisotropic metal with a transition to a weak itinerant incommensuratehelimagnetic state below T<missing VAR>N  36 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[360.0, 6.7, 'T', 5]

B
###Helical magnetic order and Fermi surface nesting in non-centrosymmetric ScFeGe|Sunil K. Karna,D. Tristant,J. K. Hebert,G. Cao,R. Chapai,W. A. Phelan,Q. Zhang,Y. Wu,C. Dhital,Y. Li,H. B. Cao,W. Tian,C. R. Dela Cruz,A. A. Aczel,O. Zaharko,A. Khasanov,M. A. McGuire,A. Roy,W. Xie,D. A. Browne,I. Vekhter,V. Meunier,W. A. Shelton,P. W. Adams,P. T. Sprunger,D. P. Young,R. Jin,J. F. DiTusa###
(1853197, 1853197)
 Neutron diffraction measurementsdiscovered a temperature and field independent helical wavevectortextbftextitk<missing VAR>  (0 0 0.193) with magnetic moments of 0.53 muB performula unit confined to the it ab-plane.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[309.0, 6.7, 'T', 4]

N
###Helical magnetic order and Fermi surface nesting in non-centrosymmetric ScFeGe|Sunil K. Karna,D. Tristant,J. K. Hebert,G. Cao,R. Chapai,W. A. Phelan,Q. Zhang,Y. Wu,C. Dhital,Y. Li,H. B. Cao,W. Tian,C. R. Dela Cruz,A. A. Aczel,O. Zaharko,A. Khasanov,M. A. McGuire,A. Roy,W. Xie,D. A. Browne,I. Vekhter,V. Meunier,W. A. Shelton,P. W. Adams,P. T. Sprunger,D. P. Young,R. Jin,J. F. DiTusa###
(1853429, 1853429)
 The electronic structure calculations, along with a stronganomaly in the it c<missing VAR>-axis conductivity at T<missing VAR>N, signal a Fermi surfacedriven magnetic transition, similar to that found in spin density wavematerials.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 6.7, 'T', 1]

ScFeGe
###Helical magnetic order and Fermi surface nesting in non-centrosymmetric ScFeGe|Sunil K. Karna,D. Tristant,J. K. Hebert,G. Cao,R. Chapai,W. A. Phelan,Q. Zhang,Y. Wu,C. Dhital,Y. Li,H. B. Cao,W. Tian,C. R. Dela Cruz,A. A. Aczel,O. Zaharko,A. Khasanov,M. A. McGuire,A. Roy,W. Xie,D. A. Browne,I. Vekhter,V. Meunier,W. A. Shelton,P. W. Adams,P. T. Sprunger,D. P. Young,R. Jin,J. F. DiTusa###
(1853556, 1853558)
 Thus, ScFeGe is an ideal system toinvestigate the effect of in-plane magnetic fields on an easy-plane magneticsystem, where the relative strength of the magnetic interactions andanisotropies determine the topology and magnetic structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 6.7, 'T', 1]

Sr2RuO4
###Magnetoresistance oscillation study of the half-quantum vortex in doubly connected mesoscopic superconducting cylinders of Sr2RuO4|Xinxin Cai,Brian M. Zakrzewski,Yiqun A. Ying,Hae-Young Kee,Manfred Sigrist,J. Elliott Ortmann,Weifeng Sun,Zhiqiang Mao,Ying Liu###
(1853673, 1853677)
Magnetoresistance oscillation study of the half-quantum vortex in doubly connected mesoscopic superconducting cylinders of Sr2RuO4.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Magnetoresistance oscillation study of the half-quantum vortex in doubly connected mesoscopic superconducting cylinders of Sr2RuO4|Xinxin Cai,Brian M. Zakrzewski,Yiqun A. Ying,Hae-Young Kee,Manfred Sigrist,J. Elliott Ortmann,Weifeng Sun,Zhiqiang Mao,Ying Liu###
(1853699, 1853699)
 The observation of the highly unusual half-quantum vortex (HQ<missing VAR>V) in a singlecrystalline superconductor excludes unequivocally the spin-singlet symmetry ofthe superconducting order parameter.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Magnetoresistance oscillation study of the half-quantum vortex in doubly connected mesoscopic superconducting cylinders of Sr2RuO4|Xinxin Cai,Brian M. Zakrzewski,Yiqun A. Ying,Hae-Young Kee,Manfred Sigrist,J. Elliott Ortmann,Weifeng Sun,Zhiqiang Mao,Ying Liu###
(1853701, 1853701)
 The observation of the highly unusual half-quantum vortex (HQ<missing VAR>V) in a singlecrystalline superconductor excludes unequivocally the spin-singlet symmetry ofthe superconducting order parameter.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Magnetoresistance oscillation study of the half-quantum vortex in doubly connected mesoscopic superconducting cylinders of Sr2RuO4|Xinxin Cai,Brian M. Zakrzewski,Yiqun A. Ying,Hae-Young Kee,Manfred Sigrist,J. Elliott Ortmann,Weifeng Sun,Zhiqiang Mao,Ying Liu###
(1853739, 1853739)
 HQ<missing VAR>Vs were observed previously inmesoscopic samples of Sr2RuO4 in cantilever torque magnetometry measurements,thus providing direct evidence for spin-triplet pairing in the material.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr2RuO4
###Magnetoresistance oscillation study of the half-quantum vortex in doubly connected mesoscopic superconducting cylinders of Sr2RuO4|Xinxin Cai,Brian M. Zakrzewski,Yiqun A. Ying,Hae-Young Kee,Manfred Sigrist,J. Elliott Ortmann,Weifeng Sun,Zhiqiang Mao,Ying Liu###
(1853758, 1853762)
 HQ<missing VAR>Vs were observed previously inmesoscopic samples of Sr2RuO4 in cantilever torque magnetometry measurements,thus providing direct evidence for spin-triplet pairing in the material.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Magnetoresistance oscillation study of the half-quantum vortex in doubly connected mesoscopic superconducting cylinders of Sr2RuO4|Xinxin Cai,Brian M. Zakrzewski,Yiqun A. Ying,Hae-Young Kee,Manfred Sigrist,J. Elliott Ortmann,Weifeng Sun,Zhiqiang Mao,Ying Liu###
(1853799, 1853799)
 Inaddition, it raised important questions on HQ<missing VAR>V, including its stability anddynamics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Magnetoresistance oscillation study of the half-quantum vortex in doubly connected mesoscopic superconducting cylinders of Sr2RuO4|Xinxin Cai,Brian M. Zakrzewski,Yiqun A. Ying,Hae-Young Kee,Manfred Sigrist,J. Elliott Ortmann,Weifeng Sun,Zhiqiang Mao,Ying Liu###
(1853815, 1853815)
 Inaddition, it raised important questions on HQ<missing VAR>V, including its stability anddynamics.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Magnetoresistance oscillation study of the half-quantum vortex in doubly connected mesoscopic superconducting cylinders of Sr2RuO4|Xinxin Cai,Brian M. Zakrzewski,Yiqun A. Ying,Hae-Young Kee,Manfred Sigrist,J. Elliott Ortmann,Weifeng Sun,Zhiqiang Mao,Ying Liu###
(1853817, 1853817)
 Inaddition, it raised important questions on HQ<missing VAR>V, including its stability anddynamics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Magnetoresistance oscillation study of the half-quantum vortex in doubly connected mesoscopic superconducting cylinders of Sr2RuO4|Xinxin Cai,Brian M. Zakrzewski,Yiqun A. Ying,Hae-Young Kee,Manfred Sigrist,J. Elliott Ortmann,Weifeng Sun,Zhiqiang Mao,Ying Liu###
(1853870, 1853870)
 We report in this paper the detection of HQ<missing VAR>Vs in mesoscopic,doubly connected cylinders of single-crystalline Sr2RuO4 of a mesoscopic sizeand the examination of the effect of the in-plane magnetic field needed for theobservation of the HQ<missing VAR>V by magnetoresistance (MR) oscillations measurements.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr2RuO4
###Magnetoresistance oscillation study of the half-quantum vortex in doubly connected mesoscopic superconducting cylinders of Sr2RuO4|Xinxin Cai,Brian M. Zakrzewski,Yiqun A. Ying,Hae-Young Kee,Manfred Sigrist,J. Elliott Ortmann,Weifeng Sun,Zhiqiang Mao,Ying Liu###
(1853892, 1853896)
 We report in this paper the detection of HQ<missing VAR>Vs in mesoscopic,doubly connected cylinders of single-crystalline Sr2RuO4 of a mesoscopic sizeand the examination of the effect of the in-plane magnetic field needed for theobservation of the HQ<missing VAR>V by magnetoresistance (MR) oscillations measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Magnetoresistance oscillation study of the half-quantum vortex in doubly connected mesoscopic superconducting cylinders of Sr2RuO4|Xinxin Cai,Brian M. Zakrzewski,Yiqun A. Ying,Hae-Young Kee,Manfred Sigrist,J. Elliott Ortmann,Weifeng Sun,Zhiqiang Mao,Ying Liu###
(1853944, 1853944)
 We report in this paper the detection of HQ<missing VAR>Vs in mesoscopic,doubly connected cylinders of single-crystalline Sr2RuO4 of a mesoscopic sizeand the examination of the effect of the in-plane magnetic field needed for theobservation of the HQ<missing VAR>V by magnetoresistance (MR) oscillations measurements.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Magnetoresistance oscillation study of the half-quantum vortex in doubly connected mesoscopic superconducting cylinders of Sr2RuO4|Xinxin Cai,Brian M. Zakrzewski,Yiqun A. Ying,Hae-Young Kee,Manfred Sigrist,J. Elliott Ortmann,Weifeng Sun,Zhiqiang Mao,Ying Liu###
(1853946, 1853946)
 We report in this paper the detection of HQ<missing VAR>Vs in mesoscopic,doubly connected cylinders of single-crystalline Sr2RuO4 of a mesoscopic sizeand the examination of the effect of the in-plane magnetic field needed for theobservation of the HQ<missing VAR>V by magnetoresistance (MR) oscillations measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Magnetoresistance oscillation study of the half-quantum vortex in doubly connected mesoscopic superconducting cylinders of Sr2RuO4|Xinxin Cai,Brian M. Zakrzewski,Yiqun A. Ying,Hae-Young Kee,Manfred Sigrist,J. Elliott Ortmann,Weifeng Sun,Zhiqiang Mao,Ying Liu###
(1854057, 1854057)
Several distinct features found in our data, especially a dip and secondarypeaks in the MR oscillations seen only in the presence of a sufficiently largein-plane magnetic field as well as a large measurement current, are linked tothe formation of the HQ<missing VAR>V fluxoid state in and crossing of an Abrikosov HQ<missing VAR>Vthrough the sample.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Magnetoresistance oscillation study of the half-quantum vortex in doubly connected mesoscopic superconducting cylinders of Sr2RuO4|Xinxin Cai,Brian M. Zakrzewski,Yiqun A. Ying,Hae-Young Kee,Manfred Sigrist,J. Elliott Ortmann,Weifeng Sun,Zhiqiang Mao,Ying Liu###
(1854059, 1854059)
Several distinct features found in our data, especially a dip and secondarypeaks in the MR oscillations seen only in the presence of a sufficiently largein-plane magnetic field as well as a large measurement current, are linked tothe formation of the HQ<missing VAR>V fluxoid state in and crossing of an Abrikosov HQ<missing VAR>Vthrough the sample.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Magnetoresistance oscillation study of the half-quantum vortex in doubly connected mesoscopic superconducting cylinders of Sr2RuO4|Xinxin Cai,Brian M. Zakrzewski,Yiqun A. Ying,Hae-Young Kee,Manfred Sigrist,J. Elliott Ortmann,Weifeng Sun,Zhiqiang Mao,Ying Liu###
(1854077, 1854077)
Several distinct features found in our data, especially a dip and secondarypeaks in the MR oscillations seen only in the presence of a sufficiently largein-plane magnetic field as well as a large measurement current, are linked tothe formation of the HQ<missing VAR>V fluxoid state in and crossing of an Abrikosov HQ<missing VAR>Vthrough the sample.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Magnetoresistance oscillation study of the half-quantum vortex in doubly connected mesoscopic superconducting cylinders of Sr2RuO4|Xinxin Cai,Brian M. Zakrzewski,Yiqun A. Ying,Hae-Young Kee,Manfred Sigrist,J. Elliott Ortmann,Weifeng Sun,Zhiqiang Mao,Ying Liu###
(1854079, 1854079)
Several distinct features found in our data, especially a dip and secondarypeaks in the MR oscillations seen only in the presence of a sufficiently largein-plane magnetic field as well as a large measurement current, are linked tothe formation of the HQ<missing VAR>V fluxoid state in and crossing of an Abrikosov HQ<missing VAR>Vthrough the sample.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Magnetoresistance oscillation study of the half-quantum vortex in doubly connected mesoscopic superconducting cylinders of Sr2RuO4|Xinxin Cai,Brian M. Zakrzewski,Yiqun A. Ying,Hae-Young Kee,Manfred Sigrist,J. Elliott Ortmann,Weifeng Sun,Zhiqiang Mao,Ying Liu###
(1854187, 1854187)
 Evidence for the trapping of an HQ<missing VAR>V fluxoidstate in the sample was also found.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Magnetoresistance oscillation study of the half-quantum vortex in doubly connected mesoscopic superconducting cylinders of Sr2RuO4|Xinxin Cai,Brian M. Zakrzewski,Yiqun A. Ying,Hae-Young Kee,Manfred Sigrist,J. Elliott Ortmann,Weifeng Sun,Zhiqiang Mao,Ying Liu###
(1854189, 1854189)
 Evidence for the trapping of an HQ<missing VAR>V fluxoidstate in the sample was also found.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Magnetoresistance oscillation study of the half-quantum vortex in doubly connected mesoscopic superconducting cylinders of Sr2RuO4|Xinxin Cai,Brian M. Zakrzewski,Yiqun A. Ying,Hae-Young Kee,Manfred Sigrist,J. Elliott Ortmann,Weifeng Sun,Zhiqiang Mao,Ying Liu###
(1854217, 1854217)
 Our observation of the HQ<missing VAR>V in mesoscopicSr2RuO4 provided not only additional evidence for spin-tripletsuperconductivity in Sr2RuO4 but also insights into the physics of HQ<missing VAR>V,including its spontaneous spin polarization, stability, and dynamics.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Magnetoresistance oscillation study of the half-quantum vortex in doubly connected mesoscopic superconducting cylinders of Sr2RuO4|Xinxin Cai,Brian M. Zakrzewski,Yiqun A. Ying,Hae-Young Kee,Manfred Sigrist,J. Elliott Ortmann,Weifeng Sun,Zhiqiang Mao,Ying Liu###
(1854219, 1854219)
 Our observation of the HQ<missing VAR>V in mesoscopicSr2RuO4 provided not only additional evidence for spin-tripletsuperconductivity in Sr2RuO4 but also insights into the physics of HQ<missing VAR>V,including its spontaneous spin polarization, stability, and dynamics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr2RuO4
###Magnetoresistance oscillation study of the half-quantum vortex in doubly connected mesoscopic superconducting cylinders of Sr2RuO4|Xinxin Cai,Brian M. Zakrzewski,Yiqun A. Ying,Hae-Young Kee,Manfred Sigrist,J. Elliott Ortmann,Weifeng Sun,Zhiqiang Mao,Ying Liu###
(1854226, 1854230)
 Our observation of the HQ<missing VAR>V in mesoscopicSr2RuO4 provided not only additional evidence for spin-tripletsuperconductivity in Sr2RuO4 but also insights into the physics of HQ<missing VAR>V,including its spontaneous spin polarization, stability, and dynamics.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Sr2RuO4
###Magnetoresistance oscillation study of the half-quantum vortex in doubly connected mesoscopic superconducting cylinders of Sr2RuO4|Xinxin Cai,Brian M. Zakrzewski,Yiqun A. Ying,Hae-Young Kee,Manfred Sigrist,J. Elliott Ortmann,Weifeng Sun,Zhiqiang Mao,Ying Liu###
(1854253, 1854257)
 Our observation of the HQ<missing VAR>V in mesoscopicSr2RuO4 provided not only additional evidence for spin-tripletsuperconductivity in Sr2RuO4 but also insights into the physics of HQ<missing VAR>V,including its spontaneous spin polarization, stability, and dynamics.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Magnetoresistance oscillation study of the half-quantum vortex in doubly connected mesoscopic superconducting cylinders of Sr2RuO4|Xinxin Cai,Brian M. Zakrzewski,Yiqun A. Ying,Hae-Young Kee,Manfred Sigrist,J. Elliott Ortmann,Weifeng Sun,Zhiqiang Mao,Ying Liu###
(1854273, 1854273)
 Our observation of the HQ<missing VAR>V in mesoscopicSr2RuO4 provided not only additional evidence for spin-tripletsuperconductivity in Sr2RuO4 but also insights into the physics of HQ<missing VAR>V,including its spontaneous spin polarization, stability, and dynamics.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Magnetoresistance oscillation study of the half-quantum vortex in doubly connected mesoscopic superconducting cylinders of Sr2RuO4|Xinxin Cai,Brian M. Zakrzewski,Yiqun A. Ying,Hae-Young Kee,Manfred Sigrist,J. Elliott Ortmann,Weifeng Sun,Zhiqiang Mao,Ying Liu###
(1854275, 1854275)
 Our observation of the HQ<missing VAR>V in mesoscopicSr2RuO4 provided not only additional evidence for spin-tripletsuperconductivity in Sr2RuO4 but also insights into the physics of HQ<missing VAR>V,including its spontaneous spin polarization, stability, and dynamics.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###Magnetoresistance oscillation study of the half-quantum vortex in doubly connected mesoscopic superconducting cylinders of Sr2RuO4|Xinxin Cai,Brian M. Zakrzewski,Yiqun A. Ying,Hae-Young Kee,Manfred Sigrist,J. Elliott Ortmann,Weifeng Sun,Zhiqiang Mao,Ying Liu###
(1854344, 1854344)
 Our studyalso revealed a possible effect of the measurement current on the magnitude ofthe spontaneous spin polarization associated with the HQ<missing VAR>V.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

V
###Magnetoresistance oscillation study of the half-quantum vortex in doubly connected mesoscopic superconducting cylinders of Sr2RuO4|Xinxin Cai,Brian M. Zakrzewski,Yiqun A. Ying,Hae-Young Kee,Manfred Sigrist,J. Elliott Ortmann,Weifeng Sun,Zhiqiang Mao,Ying Liu###
(1854346, 1854346)
 Our studyalso revealed a possible effect of the measurement current on the magnitude ofthe spontaneous spin polarization associated with the HQ<missing VAR>V.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Systematic study of nonmagnetic resistance changes due to electrical pulsing in single metal layers and metal/antiferromagnet bilayers|B. J. Jacot,G. Krishnaswamy,G. Sala,C. O. Avci,S. Vélez,P. Gambardella,C. -H. Lambert###
(1854473, 1854473)
In such cases, nonmagnetic resistivity changes may dominate over signatures ofantiferromagnetic switching.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Systematic study of nonmagnetic resistance changes due to electrical pulsing in single metal layers and metal/antiferromagnet bilayers|B. J. Jacot,G. Krishnaswamy,G. Sala,C. O. Avci,S. Vélez,P. Gambardella,C. -H. Lambert###
(1854535, 1854535)
 We report systematic measurements of thecurrent-induced changes of the transverse and longitudinal resistance of Pt andPt/NiO layers deposited on insulating substrates, namely Si/SiO2,Si/Si3N4, and Al2O3.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt/NiO
###Systematic study of nonmagnetic resistance changes due to electrical pulsing in single metal layers and metal/antiferromagnet bilayers|B. J. Jacot,G. Krishnaswamy,G. Sala,C. O. Avci,S. Vélez,P. Gambardella,C. -H. Lambert###
(1854540, 1854543)
 We report systematic measurements of thecurrent-induced changes of the transverse and longitudinal resistance of Pt andPt/NiO layers deposited on insulating substrates, namely Si/SiO2,Si/Si3N4, and Al2O3.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Si/SiO2
###Systematic study of nonmagnetic resistance changes due to electrical pulsing in single metal layers and metal/antiferromagnet bilayers|B. J. Jacot,G. Krishnaswamy,G. Sala,C. O. Avci,S. Vélez,P. Gambardella,C. -H. Lambert###
(1854558, 1854562)
 We report systematic measurements of thecurrent-induced changes of the transverse and longitudinal resistance of Pt andPt/NiO layers deposited on insulating substrates, namely Si/SiO2,Si/Si3N4, and Al2O3.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Si/Si3N4
###Systematic study of nonmagnetic resistance changes due to electrical pulsing in single metal layers and metal/antiferromagnet bilayers|B. J. Jacot,G. Krishnaswamy,G. Sala,C. O. Avci,S. Vélez,P. Gambardella,C. -H. Lambert###
(1854566, 1854571)
 We report systematic measurements of thecurrent-induced changes of the transverse and longitudinal resistance of Pt andPt/NiO layers deposited on insulating substrates, namely Si/SiO2,Si/Si3N4, and Al2O3.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

Al2O3
###Systematic study of nonmagnetic resistance changes due to electrical pulsing in single metal layers and metal/antiferromagnet bilayers|B. J. Jacot,G. Krishnaswamy,G. Sala,C. O. Avci,S. Vélez,P. Gambardella,C. -H. Lambert###
(1854576, 1854579)
 We report systematic measurements of thecurrent-induced changes of the transverse and longitudinal resistance of Pt andPt/NiO layers deposited on insulating substrates, namely Si/SiO2,Si/Si3N4, and Al2O3.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

No
###Systematic study of nonmagnetic resistance changes due to electrical pulsing in single metal layers and metal/antiferromagnet bilayers|B. J. Jacot,G. Krishnaswamy,G. Sala,C. O. Avci,S. Vélez,P. Gambardella,C. -H. Lambert###
(1854649, 1854649)
 Nosignificant difference is observed in the resistive response of Pt and NiO/Ptdevices, thus precluding evidence on the switching of antiferromagnetic domainsin NiO.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0
Abstract does not contain any numbers.

Pt
###Systematic study of nonmagnetic resistance changes due to electrical pulsing in single metal layers and metal/antiferromagnet bilayers|B. J. Jacot,G. Krishnaswamy,G. Sala,C. O. Avci,S. Vélez,P. Gambardella,C. -H. Lambert###
(1854670, 1854670)
 Nosignificant difference is observed in the resistive response of Pt and NiO/Ptdevices, thus precluding evidence on the switching of antiferromagnetic domainsin NiO.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

NiO/Pt
###Systematic study of nonmagnetic resistance changes due to electrical pulsing in single metal layers and metal/antiferromagnet bilayers|B. J. Jacot,G. Krishnaswamy,G. Sala,C. O. Avci,S. Vélez,P. Gambardella,C. -H. Lambert###
(1854674, 1854677)
 Nosignificant difference is observed in the resistive response of Pt and NiO/Ptdevices, thus precluding evidence on the switching of antiferromagnetic domainsin NiO.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

NiO
###Systematic study of nonmagnetic resistance changes due to electrical pulsing in single metal layers and metal/antiferromagnet bilayers|B. J. Jacot,G. Krishnaswamy,G. Sala,C. O. Avci,S. Vélez,P. Gambardella,C. -H. Lambert###
(1854704, 1854705)
 Nosignificant difference is observed in the resistive response of Pt and NiO/Ptdevices, thus precluding evidence on the switching of antiferromagnetic domainsin NiO.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Pt
###Systematic study of nonmagnetic resistance changes due to electrical pulsing in single metal layers and metal/antiferromagnet bilayers|B. J. Jacot,G. Krishnaswamy,G. Sala,C. O. Avci,S. Vélez,P. Gambardella,C. -H. Lambert###
(1854737, 1854737)
 The variation of the transverse resistance is associated to athermally-activated process in Pt that decays following a double exponentiallaw with characteristic timescales of a few minutes to hours.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeSe0.67Te0.33
###Electronic transport properties and hydrostatic pressure effect of FeSe$_{0.67}$Te$_{0.33}$ single crystals free of phase separation|Xiangzhuo Xing,Yue Sun,Xiaolei Yi,Meng Li,Jiajia Feng,Yan Meng,Yufeng Zhang,Wenchong Li,Nan Zhou,Xiude He,Jun-Yi Ge,Wei Zhou,Tsuyoshi Tamegai,Zhixiang Shi###
(1855604, 1855608)
Electronic transport properties and hydrostatic pressure effect of FeSe0.67Te0.33 single crystals free of phase separation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.335,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.165,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[536.0, 2.31, 'GPa', 10]

FeSe1-xTe
###Electronic transport properties and hydrostatic pressure effect of FeSe$_{0.67}$Te$_{0.33}$ single crystals free of phase separation|Xiangzhuo Xing,Yue Sun,Xiaolei Yi,Meng Li,Jiajia Feng,Yan Meng,Yufeng Zhang,Wenchong Li,Nan Zhou,Xiude He,Jun-Yi Ge,Wei Zhou,Tsuyoshi Tamegai,Zhixiang Shi###
(1855623, 1855628)
 FeSe1-xTex<missing VAR> superconductors manifest some intriguing electronicproperties depending on the value of x<missing VAR>.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[516.0, 2.31, 'GPa', 9]

In
###Electronic transport properties and hydrostatic pressure effect of FeSe$_{0.67}$Te$_{0.33}$ single crystals free of phase separation|Xiangzhuo Xing,Yue Sun,Xiaolei Yi,Meng Li,Jiajia Feng,Yan Meng,Yufeng Zhang,Wenchong Li,Nan Zhou,Xiude He,Jun-Yi Ge,Wei Zhou,Tsuyoshi Tamegai,Zhixiang Shi###
(1855657, 1855657)
 In FeSe single crystal, the nematicphase and Dirac band structure have been observed, while topological surfacesuperconductivity with the Majorana bound state was found in the crystal of x<missing VAR>sim 0.55.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[487.0, 2.31, 'GPa', 8]

FeSe
###Electronic transport properties and hydrostatic pressure effect of FeSe$_{0.67}$Te$_{0.33}$ single crystals free of phase separation|Xiangzhuo Xing,Yue Sun,Xiaolei Yi,Meng Li,Jiajia Feng,Yan Meng,Yufeng Zhang,Wenchong Li,Nan Zhou,Xiude He,Jun-Yi Ge,Wei Zhou,Tsuyoshi Tamegai,Zhixiang Shi###
(1855659, 1855660)
 In FeSe single crystal, the nematicphase and Dirac band structure have been observed, while topological surfacesuperconductivity with the Majorana bound state was found in the crystal of x<missing VAR>sim 0.55.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[484.0, 2.31, 'GPa', 8]

FeSe0.67Te0.33
###Electronic transport properties and hydrostatic pressure effect of FeSe$_{0.67}$Te$_{0.33}$ single crystals free of phase separation|Xiangzhuo Xing,Yue Sun,Xiaolei Yi,Meng Li,Jiajia Feng,Yan Meng,Yufeng Zhang,Wenchong Li,Nan Zhou,Xiude He,Jun-Yi Ge,Wei Zhou,Tsuyoshi Tamegai,Zhixiang Shi###
(1855861, 1855865)
 Here, we report thesynthesis, magnetization, electronic transport properties, and hydrostaticpressure effect of FeSe0.67Te0.33 single crystals free of phaseseparation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.335,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.165,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[279.0, 2.31, 'GPa', 5]

K
###Electronic transport properties and hydrostatic pressure effect of FeSe$_{0.67}$Te$_{0.33}$ single crystals free of phase separation|Xiangzhuo Xing,Yue Sun,Xiaolei Yi,Meng Li,Jiajia Feng,Yan Meng,Yufeng Zhang,Wenchong Li,Nan Zhou,Xiude He,Jun-Yi Ge,Wei Zhou,Tsuyoshi Tamegai,Zhixiang Shi###
(1855903, 1855903)
 A structural (nematic) transition is visible at Ts  39 K,below which the resistivity exhibits a Fermi-liquid behavior.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[241.0, 2.31, 'GPa', 4]

H
###Electronic transport properties and hydrostatic pressure effect of FeSe$_{0.67}$Te$_{0.33}$ single crystals free of phase separation|Xiangzhuo Xing,Yue Sun,Xiaolei Yi,Meng Li,Jiajia Feng,Yan Meng,Yufeng Zhang,Wenchong Li,Nan Zhou,Xiude He,Jun-Yi Ge,Wei Zhou,Tsuyoshi Tamegai,Zhixiang Shi###
(1855962, 1855962)
 Analysis of uppercritical fields suggests that spin-paramagnetic effect should be taken intoaccount for both H parallel c<missing VAR> axis and H parallel ab plane.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[182.0, 2.31, 'GPa', 3]

H
###Electronic transport properties and hydrostatic pressure effect of FeSe$_{0.67}$Te$_{0.33}$ single crystals free of phase separation|Xiangzhuo Xing,Yue Sun,Xiaolei Yi,Meng Li,Jiajia Feng,Yan Meng,Yufeng Zhang,Wenchong Li,Nan Zhou,Xiude He,Jun-Yi Ge,Wei Zhou,Tsuyoshi Tamegai,Zhixiang Shi###
(1855972, 1855972)
 Analysis of uppercritical fields suggests that spin-paramagnetic effect should be taken intoaccount for both H parallel c<missing VAR> axis and H parallel ab plane.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[172.0, 2.31, 'GPa', 3]

H
###Electronic transport properties and hydrostatic pressure effect of FeSe$_{0.67}$Te$_{0.33}$ single crystals free of phase separation|Xiangzhuo Xing,Yue Sun,Xiaolei Yi,Meng Li,Jiajia Feng,Yan Meng,Yufeng Zhang,Wenchong Li,Nan Zhou,Xiude He,Jun-Yi Ge,Wei Zhou,Tsuyoshi Tamegai,Zhixiang Shi###
(1855992, 1855992)
 A crossoverfrom the low-H quadratic to the high-H quasi-linear behavior is observed inthe magnetoresistance, signifying the possible existence of Dirac-cone state.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[152.0, 2.31, 'GPa', 2]

H
###Electronic transport properties and hydrostatic pressure effect of FeSe$_{0.67}$Te$_{0.33}$ single crystals free of phase separation|Xiangzhuo Xing,Yue Sun,Xiaolei Yi,Meng Li,Jiajia Feng,Yan Meng,Yufeng Zhang,Wenchong Li,Nan Zhou,Xiude He,Jun-Yi Ge,Wei Zhou,Tsuyoshi Tamegai,Zhixiang Shi###
(1856002, 1856002)
 A crossoverfrom the low-H quadratic to the high-H quasi-linear behavior is observed inthe magnetoresistance, signifying the possible existence of Dirac-cone state.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 2.31, 'GPa', 2]

FeSe0.67Te0.33
###Electronic transport properties and hydrostatic pressure effect of FeSe$_{0.67}$Te$_{0.33}$ single crystals free of phase separation|Xiangzhuo Xing,Yue Sun,Xiaolei Yi,Meng Li,Jiajia Feng,Yan Meng,Yufeng Zhang,Wenchong Li,Nan Zhou,Xiude He,Jun-Yi Ge,Wei Zhou,Tsuyoshi Tamegai,Zhixiang Shi###
(1856094, 1856098)
Besides, the strong temperature dependence of Hall coefficient, violation of(modified) Kohlers<missing VAR> rule, and two-band model analysis indicate the multibandeffects in FeSe0.67Te0.33 single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.335,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.165,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 2.31, 'GPa', 1]

No
###Electronic transport properties and hydrostatic pressure effect of FeSe$_{0.67}$Te$_{0.33}$ single crystals free of phase separation|Xiangzhuo Xing,Yue Sun,Xiaolei Yi,Meng Li,Jiajia Feng,Yan Meng,Yufeng Zhang,Wenchong Li,Nan Zhou,Xiude He,Jun-Yi Ge,Wei Zhou,Tsuyoshi Tamegai,Zhixiang Shi###
(1856163, 1856163)
 No signature of magnetic order thathas been detected in FeSe1-xSx<missing VAR> is observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0
[19.0, 2.31, 'GPa', 1]

FeSe1-xS
###Electronic transport properties and hydrostatic pressure effect of FeSe$_{0.67}$Te$_{0.33}$ single crystals free of phase separation|Xiangzhuo Xing,Yue Sun,Xiaolei Yi,Meng Li,Jiajia Feng,Yan Meng,Yufeng Zhang,Wenchong Li,Nan Zhou,Xiude He,Jun-Yi Ge,Wei Zhou,Tsuyoshi Tamegai,Zhixiang Shi###
(1856184, 1856189)
 No signature of magnetic order thathas been detected in FeSe1-xSx<missing VAR> is observed.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[40.0, 2.31, 'GPa', 1]

FeSe1-xTe
###Electronic transport properties and hydrostatic pressure effect of FeSe$_{0.67}$Te$_{0.33}$ single crystals free of phase separation|Xiangzhuo Xing,Yue Sun,Xiaolei Yi,Meng Li,Jiajia Feng,Yan Meng,Yufeng Zhang,Wenchong Li,Nan Zhou,Xiude He,Jun-Yi Ge,Wei Zhou,Tsuyoshi Tamegai,Zhixiang Shi###
(1856226, 1856231)
 Our findings fill up theblank of the knowledge on the basic properties of FeSe1-xTex<missing VAR> systemwith low-Te concentrations.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[82.0, 2.31, 'GPa', 2]

Te
###Electronic transport properties and hydrostatic pressure effect of FeSe$_{0.67}$Te$_{0.33}$ single crystals free of phase separation|Xiangzhuo Xing,Yue Sun,Xiaolei Yi,Meng Li,Jiajia Feng,Yan Meng,Yufeng Zhang,Wenchong Li,Nan Zhou,Xiude He,Jun-Yi Ge,Wei Zhou,Tsuyoshi Tamegai,Zhixiang Shi###
(1856241, 1856241)
 Our findings fill up theblank of the knowledge on the basic properties of FeSe1-xTex<missing VAR> systemwith low-Te concentrations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 2.31, 'GPa', 2]

LaAgSb2
###Successive destruction of charge density wave states by pressure in LaAgSb$_2$|Kazuto Akiba,Hiroaki Nishimori,Nobuaki Umeshita,Tatsuo C. Kobayashi###
(1856274, 1856277)
Successive destruction of charge density wave states by pressure in LaAgSb2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0.5,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 4, 'GPa', 1],[496.0, 0, ',', 8],[520.0, 0.22, '%', 8]

LaAgSb2
###Successive destruction of charge density wave states by pressure in LaAgSb$_2$|Kazuto Akiba,Hiroaki Nishimori,Nobuaki Umeshita,Tatsuo C. Kobayashi###
(1856294, 1856297)
 We comprehensively studied the magnetotransport properties of LaAgSb2under high pressure up to 4 GPa, which showed unique successive charge densitywave (CD<missing VAR>W) transitions at TCDW1sim 210 K and TCDW2sim 190 K atambient pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0.5,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 4, 'GPa', 0],[476.0, 0, ',', 7],[500.0, 0.22, '%', 7]

C
###Successive destruction of charge density wave states by pressure in LaAgSb$_2$|Kazuto Akiba,Hiroaki Nishimori,Nobuaki Umeshita,Tatsuo C. Kobayashi###
(1856328, 1856328)
 We comprehensively studied the magnetotransport properties of LaAgSb2under high pressure up to 4 GPa, which showed unique successive charge densitywave (CD<missing VAR>W) transitions at TCDW1sim 210 K and TCDW2sim 190 K atambient pressure.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[19.0, 4, 'GPa', 0],[445.0, 0, ',', 7],[469.0, 0.22, '%', 7]

W
###Successive destruction of charge density wave states by pressure in LaAgSb$_2$|Kazuto Akiba,Hiroaki Nishimori,Nobuaki Umeshita,Tatsuo C. Kobayashi###
(1856330, 1856330)
 We comprehensively studied the magnetotransport properties of LaAgSb2under high pressure up to 4 GPa, which showed unique successive charge densitywave (CD<missing VAR>W) transitions at TCDW1sim 210 K and TCDW2sim 190 K atambient pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[21.0, 4, 'GPa', 0],[443.0, 0, ',', 7],[467.0, 0.22, '%', 7]

W1
###Successive destruction of charge density wave states by pressure in LaAgSb$_2$|Kazuto Akiba,Hiroaki Nishimori,Nobuaki Umeshita,Tatsuo C. Kobayashi###
(1856340, 1856341)
 We comprehensively studied the magnetotransport properties of LaAgSb2under high pressure up to 4 GPa, which showed unique successive charge densitywave (CD<missing VAR>W) transitions at TCDW1sim 210 K and TCDW2sim 190 K atambient pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 4, 'GPa', 0],[432.0, 0, ',', 7],[456.0, 0.22, '%', 7]

K
###Successive destruction of charge density wave states by pressure in LaAgSb$_2$|Kazuto Akiba,Hiroaki Nishimori,Nobuaki Umeshita,Tatsuo C. Kobayashi###
(1856346, 1856346)
 We comprehensively studied the magnetotransport properties of LaAgSb2under high pressure up to 4 GPa, which showed unique successive charge densitywave (CD<missing VAR>W) transitions at TCDW1sim 210 K and TCDW2sim 190 K atambient pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[37.0, 4, 'GPa', 0],[427.0, 0, ',', 7],[451.0, 0.22, '%', 7]

W2
###Successive destruction of charge density wave states by pressure in LaAgSb$_2$|Kazuto Akiba,Hiroaki Nishimori,Nobuaki Umeshita,Tatsuo C. Kobayashi###
(1856353, 1856354)
 We comprehensively studied the magnetotransport properties of LaAgSb2under high pressure up to 4 GPa, which showed unique successive charge densitywave (CD<missing VAR>W) transitions at TCDW1sim 210 K and TCDW2sim 190 K atambient pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[44.0, 4, 'GPa', 0],[419.0, 0, ',', 7],[443.0, 0.22, '%', 7]

K
###Successive destruction of charge density wave states by pressure in LaAgSb$_2$|Kazuto Akiba,Hiroaki Nishimori,Nobuaki Umeshita,Tatsuo C. Kobayashi###
(1856359, 1856359)
 We comprehensively studied the magnetotransport properties of LaAgSb2under high pressure up to 4 GPa, which showed unique successive charge densitywave (CD<missing VAR>W) transitions at TCDW1sim 210 K and TCDW2sim 190 K atambient pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[50.0, 4, 'GPa', 0],[414.0, 0, ',', 7],[438.0, 0.22, '%', 7]

W1
###Successive destruction of charge density wave states by pressure in LaAgSb$_2$|Kazuto Akiba,Hiroaki Nishimori,Nobuaki Umeshita,Tatsuo C. Kobayashi###
(1856385, 1856386)
 With the application of pressure, both TCDW1 andTCDW2 were suppressed and disappeared at the critical pressures ofPCD<missing VAR>W13.0--3.4 G<missing VAR>Pa and PCD<missing VAR>W21.5--1.9 G<missing VAR>Pa, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 4, 'GPa', 1],[387.0, 0, ',', 6],[411.0, 0.22, '%', 6]

W2
###Successive destruction of charge density wave states by pressure in LaAgSb$_2$|Kazuto Akiba,Hiroaki Nishimori,Nobuaki Umeshita,Tatsuo C. Kobayashi###
(1856394, 1856395)
 With the application of pressure, both TCDW1 andTCDW2 were suppressed and disappeared at the critical pressures ofPCD<missing VAR>W13.0--3.4 G<missing VAR>Pa and PCD<missing VAR>W21.5--1.9 G<missing VAR>Pa, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 4, 'GPa', 1],[378.0, 0, ',', 6],[402.0, 0.22, '%', 6]

PC
###Successive destruction of charge density wave states by pressure in LaAgSb$_2$|Kazuto Akiba,Hiroaki Nishimori,Nobuaki Umeshita,Tatsuo C. Kobayashi###
(1856416, 1856417)
 With the application of pressure, both TCDW1 andTCDW2 were suppressed and disappeared at the critical pressures ofPCD<missing VAR>W13.0--3.4 G<missing VAR>Pa and PCD<missing VAR>W21.5--1.9 G<missing VAR>Pa, respectively.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 4, 'GPa', 1],[356.0, 0, ',', 6],[380.0, 0.22, '%', 6]

W13.0
###Successive destruction of charge density wave states by pressure in LaAgSb$_2$|Kazuto Akiba,Hiroaki Nishimori,Nobuaki Umeshita,Tatsuo C. Kobayashi###
(1856419, 1856421)
 With the application of pressure, both TCDW1 andTCDW2 were suppressed and disappeared at the critical pressures ofPCD<missing VAR>W13.0--3.4 G<missing VAR>Pa and PCD<missing VAR>W21.5--1.9 G<missing VAR>Pa, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 4, 'GPa', 1],[352.0, 0, ',', 6],[376.0, 0.22, '%', 6]

Pa
###Successive destruction of charge density wave states by pressure in LaAgSb$_2$|Kazuto Akiba,Hiroaki Nishimori,Nobuaki Umeshita,Tatsuo C. Kobayashi###
(1856427, 1856427)
 With the application of pressure, both TCDW1 andTCDW2 were suppressed and disappeared at the critical pressures ofPCD<missing VAR>W13.0--3.4 G<missing VAR>Pa and PCD<missing VAR>W21.5--1.9 G<missing VAR>Pa, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 4, 'GPa', 1],[346.0, 0, ',', 6],[370.0, 0.22, '%', 6]

PC
###Successive destruction of charge density wave states by pressure in LaAgSb$_2$|Kazuto Akiba,Hiroaki Nishimori,Nobuaki Umeshita,Tatsuo C. Kobayashi###
(1856431, 1856432)
 With the application of pressure, both TCDW1 andTCDW2 were suppressed and disappeared at the critical pressures ofPCD<missing VAR>W13.0--3.4 G<missing VAR>Pa and PCD<missing VAR>W21.5--1.9 G<missing VAR>Pa, respectively.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 4, 'GPa', 1],[341.0, 0, ',', 6],[365.0, 0.22, '%', 6]

W21.5
###Successive destruction of charge density wave states by pressure in LaAgSb$_2$|Kazuto Akiba,Hiroaki Nishimori,Nobuaki Umeshita,Tatsuo C. Kobayashi###
(1856434, 1856436)
 With the application of pressure, both TCDW1 andTCDW2 were suppressed and disappeared at the critical pressures ofPCD<missing VAR>W13.0--3.4 G<missing VAR>Pa and PCD<missing VAR>W21.5--1.9 G<missing VAR>Pa, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 4, 'GPa', 1],[337.0, 0, ',', 6],[361.0, 0.22, '%', 6]

Pa
###Successive destruction of charge density wave states by pressure in LaAgSb$_2$|Kazuto Akiba,Hiroaki Nishimori,Nobuaki Umeshita,Tatsuo C. Kobayashi###
(1856442, 1856442)
 With the application of pressure, both TCDW1 andTCDW2 were suppressed and disappeared at the critical pressures ofPCD<missing VAR>W13.0--3.4 G<missing VAR>Pa and PCD<missing VAR>W21.5--1.9 G<missing VAR>Pa, respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0
[133.0, 4, 'GPa', 1],[331.0, 0, ',', 6],[355.0, 0.22, '%', 6]

At
###Successive destruction of charge density wave states by pressure in LaAgSb$_2$|Kazuto Akiba,Hiroaki Nishimori,Nobuaki Umeshita,Tatsuo C. Kobayashi###
(1856448, 1856448)
 AtPCD<missing VAR>W1, the Hall conductivity showed a step-like increase, which isconsistently understood by the emergence of two-dimensional hollow Fermisurface at PCD<missing VAR>W1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[139.0, 4, 'GPa', 2],[325.0, 0, ',', 5],[349.0, 0.22, '%', 5]

PC
###Successive destruction of charge density wave states by pressure in LaAgSb$_2$|Kazuto Akiba,Hiroaki Nishimori,Nobuaki Umeshita,Tatsuo C. Kobayashi###
(1856451, 1856452)
 AtPCD<missing VAR>W1, the Hall conductivity showed a step-like increase, which isconsistently understood by the emergence of two-dimensional hollow Fermisurface at PCD<missing VAR>W1.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 4, 'GPa', 2],[321.0, 0, ',', 5],[345.0, 0.22, '%', 5]

W1
###Successive destruction of charge density wave states by pressure in LaAgSb$_2$|Kazuto Akiba,Hiroaki Nishimori,Nobuaki Umeshita,Tatsuo C. Kobayashi###
(1856454, 1856455)
 AtPCD<missing VAR>W1, the Hall conductivity showed a step-like increase, which isconsistently understood by the emergence of two-dimensional hollow Fermisurface at PCD<missing VAR>W1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[145.0, 4, 'GPa', 2],[318.0, 0, ',', 5],[342.0, 0.22, '%', 5]

PC
###Successive destruction of charge density wave states by pressure in LaAgSb$_2$|Kazuto Akiba,Hiroaki Nishimori,Nobuaki Umeshita,Tatsuo C. Kobayashi###
(1856505, 1856506)
 AtPCD<missing VAR>W1, the Hall conductivity showed a step-like increase, which isconsistently understood by the emergence of two-dimensional hollow Fermisurface at PCD<missing VAR>W1.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[196.0, 4, 'GPa', 2],[267.0, 0, ',', 5],[291.0, 0.22, '%', 5]

W1
###Successive destruction of charge density wave states by pressure in LaAgSb$_2$|Kazuto Akiba,Hiroaki Nishimori,Nobuaki Umeshita,Tatsuo C. Kobayashi###
(1856508, 1856509)
 AtPCD<missing VAR>W1, the Hall conductivity showed a step-like increase, which isconsistently understood by the emergence of two-dimensional hollow Fermisurface at PCD<missing VAR>W1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[199.0, 4, 'GPa', 2],[264.0, 0, ',', 5],[288.0, 0.22, '%', 5]

H
###Successive destruction of charge density wave states by pressure in LaAgSb$_2$|Kazuto Akiba,Hiroaki Nishimori,Nobuaki Umeshita,Tatsuo C. Kobayashi###
(1856566, 1856566)
 Shubnikov--de Haas (SdH) oscillation measurementsunder pressure directly showed the changes in the Fermi surface across the CD<missing VAR>Wphase boundaries.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[257.0, 4, 'GPa', 4],[207.0, 0, ',', 3],[231.0, 0.22, '%', 3]

C
###Successive destruction of charge density wave states by pressure in LaAgSb$_2$|Kazuto Akiba,Hiroaki Nishimori,Nobuaki Umeshita,Tatsuo C. Kobayashi###
(1856598, 1856598)
 Shubnikov--de Haas (SdH) oscillation measurementsunder pressure directly showed the changes in the Fermi surface across the CD<missing VAR>Wphase boundaries.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[289.0, 4, 'GPa', 4],[175.0, 0, ',', 3],[199.0, 0.22, '%', 3]

W
###Successive destruction of charge density wave states by pressure in LaAgSb$_2$|Kazuto Akiba,Hiroaki Nishimori,Nobuaki Umeshita,Tatsuo C. Kobayashi###
(1856600, 1856600)
 Shubnikov--de Haas (SdH) oscillation measurementsunder pressure directly showed the changes in the Fermi surface across the CD<missing VAR>Wphase boundaries.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[291.0, 4, 'GPa', 4],[173.0, 0, ',', 3],[197.0, 0.22, '%', 3]

In
###Successive destruction of charge density wave states by pressure in LaAgSb$_2$|Kazuto Akiba,Hiroaki Nishimori,Nobuaki Umeshita,Tatsuo C. Kobayashi###
(1856608, 1856608)
 In P<PCD<missing VAR>W2, three major oscillation components,alpha, beta, and gamma, were identified, whose frequencies wereincreased by application of pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[299.0, 4, 'GPa', 5],[165.0, 0, ',', 2],[189.0, 0.22, '%', 2]

P
###Successive destruction of charge density wave states by pressure in LaAgSb$_2$|Kazuto Akiba,Hiroaki Nishimori,Nobuaki Umeshita,Tatsuo C. Kobayashi###
(1856610, 1856610)
 In P<PCD<missing VAR>W2, three major oscillation components,alpha, beta, and gamma, were identified, whose frequencies wereincreased by application of pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[301.0, 4, 'GPa', 5],[163.0, 0, ',', 2],[187.0, 0.22, '%', 2]

PC
###Successive destruction of charge density wave states by pressure in LaAgSb$_2$|Kazuto Akiba,Hiroaki Nishimori,Nobuaki Umeshita,Tatsuo C. Kobayashi###
(1856612, 1856613)
 In P<PCD<missing VAR>W2, three major oscillation components,alpha, beta, and gamma, were identified, whose frequencies wereincreased by application of pressure.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[303.0, 4, 'GPa', 5],[160.0, 0, ',', 2],[184.0, 0.22, '%', 2]

W2
###Successive destruction of charge density wave states by pressure in LaAgSb$_2$|Kazuto Akiba,Hiroaki Nishimori,Nobuaki Umeshita,Tatsuo C. Kobayashi###
(1856615, 1856616)
 In P<PCD<missing VAR>W2, three major oscillation components,alpha, beta, and gamma, were identified, whose frequencies wereincreased by application of pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[306.0, 4, 'GPa', 5],[157.0, 0, ',', 2],[181.0, 0.22, '%', 2]

In
###Successive destruction of charge density wave states by pressure in LaAgSb$_2$|Kazuto Akiba,Hiroaki Nishimori,Nobuaki Umeshita,Tatsuo C. Kobayashi###
(1856717, 1856717)
 In thenormal metallic phase above P>PCD<missing VAR>W1, we observed a single frequency ofsim 48 T<missing VAR> with a cyclotron effective mass of 0.066 m<missing VAR>0, whose cross sectionin the reciprocal space corresponded to only 0.22% of the first Brillouinzone.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[408.0, 4, 'GPa', 7],[56.0, 0, ',', 0],[80.0, 0.22, '%', 0]

P
###Successive destruction of charge density wave states by pressure in LaAgSb$_2$|Kazuto Akiba,Hiroaki Nishimori,Nobuaki Umeshita,Tatsuo C. Kobayashi###
(1856730, 1856730)
 In thenormal metallic phase above P>PCD<missing VAR>W1, we observed a single frequency ofsim 48 T<missing VAR> with a cyclotron effective mass of 0.066 m<missing VAR>0, whose cross sectionin the reciprocal space corresponded to only 0.22% of the first Brillouinzone.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[421.0, 4, 'GPa', 7],[43.0, 0, ',', 0],[67.0, 0.22, '%', 0]

PC
###Successive destruction of charge density wave states by pressure in LaAgSb$_2$|Kazuto Akiba,Hiroaki Nishimori,Nobuaki Umeshita,Tatsuo C. Kobayashi###
(1856732, 1856733)
 In thenormal metallic phase above P>PCD<missing VAR>W1, we observed a single frequency ofsim 48 T<missing VAR> with a cyclotron effective mass of 0.066 m<missing VAR>0, whose cross sectionin the reciprocal space corresponded to only 0.22% of the first Brillouinzone.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[423.0, 4, 'GPa', 7],[40.0, 0, ',', 0],[64.0, 0.22, '%', 0]

W1
###Successive destruction of charge density wave states by pressure in LaAgSb$_2$|Kazuto Akiba,Hiroaki Nishimori,Nobuaki Umeshita,Tatsuo C. Kobayashi###
(1856735, 1856736)
 In thenormal metallic phase above P>PCD<missing VAR>W1, we observed a single frequency ofsim 48 T<missing VAR> with a cyclotron effective mass of 0.066 m<missing VAR>0, whose cross sectionin the reciprocal space corresponded to only 0.22% of the first Brillouinzone.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[426.0, 4, 'GPa', 7],[37.0, 0, ',', 0],[61.0, 0.22, '%', 0]

PC
###Successive destruction of charge density wave states by pressure in LaAgSb$_2$|Kazuto Akiba,Hiroaki Nishimori,Nobuaki Umeshita,Tatsuo C. Kobayashi###
(1856860, 1856861)
 Besides, we observed another oscillation component with frequency ofsim 9.2 T<missing VAR>, which is significantly enhanced in the limited pressure range ofPCD<missing VAR>W2<P<PCD<missing VAR>W1.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[551.0, 4, 'GPa', 8],[87.0, 0, ',', 1],[63.0, 0.22, '%', 1]

W2
###Successive destruction of charge density wave states by pressure in LaAgSb$_2$|Kazuto Akiba,Hiroaki Nishimori,Nobuaki Umeshita,Tatsuo C. Kobayashi###
(1856863, 1856864)
 Besides, we observed another oscillation component with frequency ofsim 9.2 T<missing VAR>, which is significantly enhanced in the limited pressure range ofPCD<missing VAR>W2<P<PCD<missing VAR>W1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[554.0, 4, 'GPa', 8],[90.0, 0, ',', 1],[66.0, 0.22, '%', 1]

P
###Successive destruction of charge density wave states by pressure in LaAgSb$_2$|Kazuto Akiba,Hiroaki Nishimori,Nobuaki Umeshita,Tatsuo C. Kobayashi###
(1856866, 1856866)
 Besides, we observed another oscillation component with frequency ofsim 9.2 T<missing VAR>, which is significantly enhanced in the limited pressure range ofPCD<missing VAR>W2<P<PCD<missing VAR>W1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[557.0, 4, 'GPa', 8],[93.0, 0, ',', 1],[69.0, 0.22, '%', 1]

PC
###Successive destruction of charge density wave states by pressure in LaAgSb$_2$|Kazuto Akiba,Hiroaki Nishimori,Nobuaki Umeshita,Tatsuo C. Kobayashi###
(1856868, 1856869)
 Besides, we observed another oscillation component with frequency ofsim 9.2 T<missing VAR>, which is significantly enhanced in the limited pressure range ofPCD<missing VAR>W2<P<PCD<missing VAR>W1.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[559.0, 4, 'GPa', 8],[95.0, 0, ',', 1],[71.0, 0.22, '%', 1]

W1
###Successive destruction of charge density wave states by pressure in LaAgSb$_2$|Kazuto Akiba,Hiroaki Nishimori,Nobuaki Umeshita,Tatsuo C. Kobayashi###
(1856871, 1856872)
 Besides, we observed another oscillation component with frequency ofsim 9.2 T<missing VAR>, which is significantly enhanced in the limited pressure range ofPCD<missing VAR>W2<P<PCD<missing VAR>W1.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[562.0, 4, 'GPa', 8],[98.0, 0, ',', 1],[74.0, 0.22, '%', 1]

Cu2Sb
###Perpendicular magnetic anisotropy in ultra-thin Cu$_2$Sb-type (Mn-Cr)AlGe films onto thermally oxidized silicon substrates|Takahide Kubota,Keita Ito,Rie Y Umetsu,Koki Takanashi###
(1856952, 1856954)
Perpendicular magnetic anisotropy in ultra-thin Cu2Sb-type (Mn-Cr)AlGe films onto thermally oxidized silicon substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[282.0, 3.0, 'nm', 4],[451.0, 5, 'and', 6],[452.0, 3, 'nm', 6]

Mn
###Perpendicular magnetic anisotropy in ultra-thin Cu$_2$Sb-type (Mn-Cr)AlGe films onto thermally oxidized silicon substrates|Takahide Kubota,Keita Ito,Rie Y Umetsu,Koki Takanashi###
(1856959, 1856959)
Perpendicular magnetic anisotropy in ultra-thin Cu2Sb-type (Mn-Cr)AlGe films onto thermally oxidized silicon substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[277.0, 3.0, 'nm', 4],[446.0, 5, 'and', 6],[447.0, 3, 'nm', 6]

Cr
###Perpendicular magnetic anisotropy in ultra-thin Cu$_2$Sb-type (Mn-Cr)AlGe films onto thermally oxidized silicon substrates|Takahide Kubota,Keita Ito,Rie Y Umetsu,Koki Takanashi###
(1856961, 1856961)
Perpendicular magnetic anisotropy in ultra-thin Cu2Sb-type (Mn-Cr)AlGe films onto thermally oxidized silicon substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[275.0, 3.0, 'nm', 4],[444.0, 5, 'and', 6],[445.0, 3, 'nm', 6]

AlGe
###Perpendicular magnetic anisotropy in ultra-thin Cu$_2$Sb-type (Mn-Cr)AlGe films onto thermally oxidized silicon substrates|Takahide Kubota,Keita Ito,Rie Y Umetsu,Koki Takanashi###
(1856963, 1856964)
Perpendicular magnetic anisotropy in ultra-thin Cu2Sb-type (Mn-Cr)AlGe films onto thermally oxidized silicon substrates.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[272.0, 3.0, 'nm', 4],[441.0, 5, 'and', 6],[442.0, 3, 'nm', 6]

S
###Perpendicular magnetic anisotropy in ultra-thin Cu$_2$Sb-type (Mn-Cr)AlGe films onto thermally oxidized silicon substrates|Takahide Kubota,Keita Ito,Rie Y Umetsu,Koki Takanashi###
(1857026, 1857026)
 Perpendicularly magnetized films showing small saturation magnetization,Mmathrms, are essential for spin-transfer-torque writing typemagnetoresistive random access memories, STT-MRAMs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[210.0, 3.0, 'nm', 3],[379.0, 5, 'and', 5],[380.0, 3, 'nm', 5]

Mn
###Perpendicular magnetic anisotropy in ultra-thin Cu$_2$Sb-type (Mn-Cr)AlGe films onto thermally oxidized silicon substrates|Takahide Kubota,Keita Ito,Rie Y Umetsu,Koki Takanashi###
(1857045, 1857045)
 An intermetallic compound,(Mn-Cr)AlGe of the Cu2Sb-type crystal structure was investigated, in thisstudy, as a material showing the low Mmathrms (sim 300 k<missing VAR>A/m) andhigh-perpendicular magnetic anisotropy, Kmathrmu<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[191.0, 3.0, 'nm', 2],[360.0, 5, 'and', 4],[361.0, 3, 'nm', 4]

Cr
###Perpendicular magnetic anisotropy in ultra-thin Cu$_2$Sb-type (Mn-Cr)AlGe films onto thermally oxidized silicon substrates|Takahide Kubota,Keita Ito,Rie Y Umetsu,Koki Takanashi###
(1857047, 1857047)
 An intermetallic compound,(Mn-Cr)AlGe of the Cu2Sb-type crystal structure was investigated, in thisstudy, as a material showing the low Mmathrms (sim 300 k<missing VAR>A/m) andhigh-perpendicular magnetic anisotropy, Kmathrmu<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[189.0, 3.0, 'nm', 2],[358.0, 5, 'and', 4],[359.0, 3, 'nm', 4]

AlGe
###Perpendicular magnetic anisotropy in ultra-thin Cu$_2$Sb-type (Mn-Cr)AlGe films onto thermally oxidized silicon substrates|Takahide Kubota,Keita Ito,Rie Y Umetsu,Koki Takanashi###
(1857049, 1857050)
 An intermetallic compound,(Mn-Cr)AlGe of the Cu2Sb-type crystal structure was investigated, in thisstudy, as a material showing the low Mmathrms (sim 300 k<missing VAR>A/m) andhigh-perpendicular magnetic anisotropy, Kmathrmu<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[186.0, 3.0, 'nm', 2],[355.0, 5, 'and', 4],[356.0, 3, 'nm', 4]

Cu2Sb
###Perpendicular magnetic anisotropy in ultra-thin Cu$_2$Sb-type (Mn-Cr)AlGe films onto thermally oxidized silicon substrates|Takahide Kubota,Keita Ito,Rie Y Umetsu,Koki Takanashi###
(1857056, 1857058)
 An intermetallic compound,(Mn-Cr)AlGe of the Cu2Sb-type crystal structure was investigated, in thisstudy, as a material showing the low Mmathrms (sim 300 k<missing VAR>A/m) andhigh-perpendicular magnetic anisotropy, Kmathrmu<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 3.0, 'nm', 2],[347.0, 5, 'and', 4],[348.0, 3, 'nm', 4]

K
###Perpendicular magnetic anisotropy in ultra-thin Cu$_2$Sb-type (Mn-Cr)AlGe films onto thermally oxidized silicon substrates|Takahide Kubota,Keita Ito,Rie Y Umetsu,Koki Takanashi###
(1857118, 1857118)
 An intermetallic compound,(Mn-Cr)AlGe of the Cu2Sb-type crystal structure was investigated, in thisstudy, as a material showing the low Mmathrms (sim 300 k<missing VAR>A/m) andhigh-perpendicular magnetic anisotropy, Kmathrmu<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 3.0, 'nm', 2],[287.0, 5, 'and', 4],[288.0, 3, 'nm', 4]

K
###Perpendicular magnetic anisotropy in ultra-thin Cu$_2$Sb-type (Mn-Cr)AlGe films onto thermally oxidized silicon substrates|Takahide Kubota,Keita Ito,Rie Y Umetsu,Koki Takanashi###
(1857134, 1857134)
 The layer thicknessdependence of Kmathrmu<missing VAR> and effects of Mg-insertion layers at top andbottom (Mn-Cr)AlGeMgO interfaces were studied in film samples fabricatedonto thermally oxidized silicon substrates to realize high-Kmathrmu<missing VAR> inthe thickness range of a few nanometer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[102.0, 3.0, 'nm', 1],[271.0, 5, 'and', 3],[272.0, 3, 'nm', 3]

Mg
###Perpendicular magnetic anisotropy in ultra-thin Cu$_2$Sb-type (Mn-Cr)AlGe films onto thermally oxidized silicon substrates|Takahide Kubota,Keita Ito,Rie Y Umetsu,Koki Takanashi###
(1857144, 1857144)
 The layer thicknessdependence of Kmathrmu<missing VAR> and effects of Mg-insertion layers at top andbottom (Mn-Cr)AlGeMgO interfaces were studied in film samples fabricatedonto thermally oxidized silicon substrates to realize high-Kmathrmu<missing VAR> inthe thickness range of a few nanometer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 3.0, 'nm', 1],[261.0, 5, 'and', 3],[262.0, 3, 'nm', 3]

Mn
###Perpendicular magnetic anisotropy in ultra-thin Cu$_2$Sb-type (Mn-Cr)AlGe films onto thermally oxidized silicon substrates|Takahide Kubota,Keita Ito,Rie Y Umetsu,Koki Takanashi###
(1857160, 1857160)
 The layer thicknessdependence of Kmathrmu<missing VAR> and effects of Mg-insertion layers at top andbottom (Mn-Cr)AlGeMgO interfaces were studied in film samples fabricatedonto thermally oxidized silicon substrates to realize high-Kmathrmu<missing VAR> inthe thickness range of a few nanometer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 3.0, 'nm', 1],[245.0, 5, 'and', 3],[246.0, 3, 'nm', 3]

Cr
###Perpendicular magnetic anisotropy in ultra-thin Cu$_2$Sb-type (Mn-Cr)AlGe films onto thermally oxidized silicon substrates|Takahide Kubota,Keita Ito,Rie Y Umetsu,Koki Takanashi###
(1857162, 1857162)
 The layer thicknessdependence of Kmathrmu<missing VAR> and effects of Mg-insertion layers at top andbottom (Mn-Cr)AlGeMgO interfaces were studied in film samples fabricatedonto thermally oxidized silicon substrates to realize high-Kmathrmu<missing VAR> inthe thickness range of a few nanometer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[74.0, 3.0, 'nm', 1],[243.0, 5, 'and', 3],[244.0, 3, 'nm', 3]

AlGeMgO
###Perpendicular magnetic anisotropy in ultra-thin Cu$_2$Sb-type (Mn-Cr)AlGe films onto thermally oxidized silicon substrates|Takahide Kubota,Keita Ito,Rie Y Umetsu,Koki Takanashi###
(1857164, 1857167)
 The layer thicknessdependence of Kmathrmu<missing VAR> and effects of Mg-insertion layers at top andbottom (Mn-Cr)AlGeMgO interfaces were studied in film samples fabricatedonto thermally oxidized silicon substrates to realize high-Kmathrmu<missing VAR> inthe thickness range of a few nanometer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.25,0,0,0,0.25,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 3.0, 'nm', 1],[238.0, 5, 'and', 3],[239.0, 3, 'nm', 3]

K
###Perpendicular magnetic anisotropy in ultra-thin Cu$_2$Sb-type (Mn-Cr)AlGe films onto thermally oxidized silicon substrates|Takahide Kubota,Keita Ito,Rie Y Umetsu,Koki Takanashi###
(1857200, 1857200)
 The layer thicknessdependence of Kmathrmu<missing VAR> and effects of Mg-insertion layers at top andbottom (Mn-Cr)AlGeMgO interfaces were studied in film samples fabricatedonto thermally oxidized silicon substrates to realize high-Kmathrmu<missing VAR> inthe thickness range of a few nanometer.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[36.0, 3.0, 'nm', 1],[205.0, 5, 'and', 3],[206.0, 3, 'nm', 3]

Mg
###Perpendicular magnetic anisotropy in ultra-thin Cu$_2$Sb-type (Mn-Cr)AlGe films onto thermally oxidized silicon substrates|Takahide Kubota,Keita Ito,Rie Y Umetsu,Koki Takanashi###
(1857224, 1857224)
 Optimum Mg-insertion thicknesses were1.4 and 3.0 nm for the bottom and the top interfaces, respectively, which wererelatively thick compared to results in similar insertion effect investigationson magnetic tunnel junctions reported in previous studies.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 3.0, 'nm', 0],[181.0, 5, 'and', 2],[182.0, 3, 'nm', 2]

Mg
###Perpendicular magnetic anisotropy in ultra-thin Cu$_2$Sb-type (Mn-Cr)AlGe films onto thermally oxidized silicon substrates|Takahide Kubota,Keita Ito,Rie Y Umetsu,Koki Takanashi###
(1857320, 1857320)
 The cross-sectionaltransmission electron microscope images revealed that the Mg-insertion layersacted as barriers to interdiffusion of Al-atoms as well as oxidization from theMgO layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[84.0, 3.0, 'nm', 1],[85.0, 5, 'and', 1],[86.0, 3, 'nm', 1]

Al
###Perpendicular magnetic anisotropy in ultra-thin Cu$_2$Sb-type (Mn-Cr)AlGe films onto thermally oxidized silicon substrates|Takahide Kubota,Keita Ito,Rie Y Umetsu,Koki Takanashi###
(1857339, 1857339)
 The cross-sectionaltransmission electron microscope images revealed that the Mg-insertion layersacted as barriers to interdiffusion of Al-atoms as well as oxidization from theMgO layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 3.0, 'nm', 1],[66.0, 5, 'and', 1],[67.0, 3, 'nm', 1]

MgO
###Perpendicular magnetic anisotropy in ultra-thin Cu$_2$Sb-type (Mn-Cr)AlGe films onto thermally oxidized silicon substrates|Takahide Kubota,Keita Ito,Rie Y Umetsu,Koki Takanashi###
(1857356, 1857357)
 The cross-sectionaltransmission electron microscope images revealed that the Mg-insertion layersacted as barriers to interdiffusion of Al-atoms as well as oxidization from theMgO layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 3.0, 'nm', 1],[48.0, 5, 'and', 1],[49.0, 3, 'nm', 1]

K
###Perpendicular magnetic anisotropy in ultra-thin Cu$_2$Sb-type (Mn-Cr)AlGe films onto thermally oxidized silicon substrates|Takahide Kubota,Keita Ito,Rie Y Umetsu,Koki Takanashi###
(1857368, 1857368)
 The values of Kmathrmu<missing VAR> were about 7 times 105 and 2times 105 J/m3 at room temperature for 5 and 3 nm-thick (Mn-Cr)AlGefilms, respectively, with the optimum Mg-insertion thicknesses.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 3.0, 'nm', 2],[37.0, 5, 'and', 0],[38.0, 3, 'nm', 0]

Mn
###Perpendicular magnetic anisotropy in ultra-thin Cu$_2$Sb-type (Mn-Cr)AlGe films onto thermally oxidized silicon substrates|Takahide Kubota,Keita Ito,Rie Y Umetsu,Koki Takanashi###
(1857411, 1857411)
 The values of Kmathrmu<missing VAR> were about 7 times 105 and 2times 105 J/m3 at room temperature for 5 and 3 nm-thick (Mn-Cr)AlGefilms, respectively, with the optimum Mg-insertion thicknesses.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[175.0, 3.0, 'nm', 2],[6.0, 5, 'and', 0],[5.0, 3, 'nm', 0]

Cr
###Perpendicular magnetic anisotropy in ultra-thin Cu$_2$Sb-type (Mn-Cr)AlGe films onto thermally oxidized silicon substrates|Takahide Kubota,Keita Ito,Rie Y Umetsu,Koki Takanashi###
(1857413, 1857413)
 The values of Kmathrmu<missing VAR> were about 7 times 105 and 2times 105 J/m3 at room temperature for 5 and 3 nm-thick (Mn-Cr)AlGefilms, respectively, with the optimum Mg-insertion thicknesses.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[177.0, 3.0, 'nm', 2],[8.0, 5, 'and', 0],[7.0, 3, 'nm', 0]

AlGe
###Perpendicular magnetic anisotropy in ultra-thin Cu$_2$Sb-type (Mn-Cr)AlGe films onto thermally oxidized silicon substrates|Takahide Kubota,Keita Ito,Rie Y Umetsu,Koki Takanashi###
(1857415, 1857416)
 The values of Kmathrmu<missing VAR> were about 7 times 105 and 2times 105 J/m3 at room temperature for 5 and 3 nm-thick (Mn-Cr)AlGefilms, respectively, with the optimum Mg-insertion thicknesses.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 3.0, 'nm', 2],[10.0, 5, 'and', 0],[9.0, 3, 'nm', 0]

Mg
###Perpendicular magnetic anisotropy in ultra-thin Cu$_2$Sb-type (Mn-Cr)AlGe films onto thermally oxidized silicon substrates|Takahide Kubota,Keita Ito,Rie Y Umetsu,Koki Takanashi###
(1857431, 1857431)
 The values of Kmathrmu<missing VAR> were about 7 times 105 and 2times 105 J/m3 at room temperature for 5 and 3 nm-thick (Mn-Cr)AlGefilms, respectively, with the optimum Mg-insertion thicknesses.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[195.0, 3.0, 'nm', 2],[26.0, 5, 'and', 0],[25.0, 3, 'nm', 0]

K
###Perpendicular magnetic anisotropy in ultra-thin Cu$_2$Sb-type (Mn-Cr)AlGe films onto thermally oxidized silicon substrates|Takahide Kubota,Keita Ito,Rie Y Umetsu,Koki Takanashi###
(1857441, 1857441)
 TheKmathrmu<missing VAR> at a few nanometer thicknesses is comparable or higher thanthose reported in perpendicularly magnetized CoFeB films which areconventionally used in MRAMs, while the Mmathrms value is one third orless smaller than those of the CoFeB films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, 3.0, 'nm', 3],[36.0, 5, 'and', 1],[35.0, 3, 'nm', 1]

CoFeB
###Perpendicular magnetic anisotropy in ultra-thin Cu$_2$Sb-type (Mn-Cr)AlGe films onto thermally oxidized silicon substrates|Takahide Kubota,Keita Ito,Rie Y Umetsu,Koki Takanashi###
(1857476, 1857478)
 TheKmathrmu<missing VAR> at a few nanometer thicknesses is comparable or higher thanthose reported in perpendicularly magnetized CoFeB films which areconventionally used in MRAMs, while the Mmathrms value is one third orless smaller than those of the CoFeB films.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[240.0, 3.0, 'nm', 3],[71.0, 5, 'and', 1],[70.0, 3, 'nm', 1]

CoFeB
###Perpendicular magnetic anisotropy in ultra-thin Cu$_2$Sb-type (Mn-Cr)AlGe films onto thermally oxidized silicon substrates|Takahide Kubota,Keita Ito,Rie Y Umetsu,Koki Takanashi###
(1857530, 1857532)
 TheKmathrmu<missing VAR> at a few nanometer thicknesses is comparable or higher thanthose reported in perpendicularly magnetized CoFeB films which areconventionally used in MRAMs, while the Mmathrms value is one third orless smaller than those of the CoFeB films.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[294.0, 3.0, 'nm', 3],[125.0, 5, 'and', 1],[124.0, 3, 'nm', 1]

Mn
###Perpendicular magnetic anisotropy in ultra-thin Cu$_2$Sb-type (Mn-Cr)AlGe films onto thermally oxidized silicon substrates|Takahide Kubota,Keita Ito,Rie Y Umetsu,Koki Takanashi###
(1857542, 1857542)
 The developed (Mn-Cr)AlGe films arepromising from the viewpoint of not only the magnetic properties, but also thecompatibility to the silicon process in the film fabrication.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[306.0, 3.0, 'nm', 4],[137.0, 5, 'and', 2],[136.0, 3, 'nm', 2]

Cr
###Perpendicular magnetic anisotropy in ultra-thin Cu$_2$Sb-type (Mn-Cr)AlGe films onto thermally oxidized silicon substrates|Takahide Kubota,Keita Ito,Rie Y Umetsu,Koki Takanashi###
(1857544, 1857544)
 The developed (Mn-Cr)AlGe films arepromising from the viewpoint of not only the magnetic properties, but also thecompatibility to the silicon process in the film fabrication.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[308.0, 3.0, 'nm', 4],[139.0, 5, 'and', 2],[138.0, 3, 'nm', 2]

AlGe
###Perpendicular magnetic anisotropy in ultra-thin Cu$_2$Sb-type (Mn-Cr)AlGe films onto thermally oxidized silicon substrates|Takahide Kubota,Keita Ito,Rie Y Umetsu,Koki Takanashi###
(1857546, 1857547)
 The developed (Mn-Cr)AlGe films arepromising from the viewpoint of not only the magnetic properties, but also thecompatibility to the silicon process in the film fabrication.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[310.0, 3.0, 'nm', 4],[141.0, 5, 'and', 2],[140.0, 3, 'nm', 2]

N
###High magnetoresistance of hexagonal boron nitride-graphene heterostructure-based MTJ through excited-electron transmission|Halimah Harfah,Yusuf Wicaksono,Gagus Ketut Sunnardianto,Muhammad Aziz Majidi,Koichi Kusakabea###
(1857672, 1857672)
 This work presents an ab-initio study of a few-layers hexagonal boron nitride(h<missing VAR>BN) and h<missing VAR>BN-graphene heterostructure sandwiched between Ni(111) layers.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 2, ',', 2],[109.0, 3, ',', 2],[112.0, 4, ',', 2],[116.0, 5, 'as', 2],[294.0, 2, 'and', 5],[308.0, 2, ',', 5],[423.0, 2, ',', 7],[570.0, 1200, '%', 9]

BN
###High magnetoresistance of hexagonal boron nitride-graphene heterostructure-based MTJ through excited-electron transmission|Halimah Harfah,Yusuf Wicaksono,Gagus Ketut Sunnardianto,Muhammad Aziz Majidi,Koichi Kusakabea###
(1857678, 1857679)
 This work presents an ab-initio study of a few-layers hexagonal boron nitride(h<missing VAR>BN) and h<missing VAR>BN-graphene heterostructure sandwiched between Ni(111) layers.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 2, ',', 2],[102.0, 3, ',', 2],[105.0, 4, ',', 2],[109.0, 5, 'as', 2],[287.0, 2, 'and', 5],[301.0, 2, ',', 5],[416.0, 2, ',', 7],[563.0, 1200, '%', 9]

BN
###High magnetoresistance of hexagonal boron nitride-graphene heterostructure-based MTJ through excited-electron transmission|Halimah Harfah,Yusuf Wicaksono,Gagus Ketut Sunnardianto,Muhammad Aziz Majidi,Koichi Kusakabea###
(1857802, 1857803)
 Spin-polarized density functional theory calculations andtransmission probability calculations were conducted on Ni(111)/nhBN/Ni(111)with n<missing VAR>  2, 3, 4, and 5 as well as on Ni(111)/h<missing VAR>BN-Gr-h<missing VAR>BN/Ni(111).
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[24.0, 2, ',', 0],[21.0, 3, ',', 0],[18.0, 4, ',', 0],[14.0, 5, 'as', 0],[163.0, 2, 'and', 3],[177.0, 2, ',', 3],[292.0, 2, ',', 5],[439.0, 1200, '%', 7]

C
###High magnetoresistance of hexagonal boron nitride-graphene heterostructure-based MTJ through excited-electron transmission|Halimah Harfah,Yusuf Wicaksono,Gagus Ketut Sunnardianto,Muhammad Aziz Majidi,Koichi Kusakabea###
(1857839, 1857839)
 Slabs withmagnetic alignment in an anti-parallel configuration (APC) and parallelconfiguration (PC) were considered.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 2, ',', 1],[58.0, 3, ',', 1],[55.0, 4, ',', 1],[51.0, 5, 'as', 1],[127.0, 2, 'and', 2],[141.0, 2, ',', 2],[256.0, 2, ',', 4],[403.0, 1200, '%', 6]

(PC)
###High magnetoresistance of hexagonal boron nitride-graphene heterostructure-based MTJ through excited-electron transmission|Halimah Harfah,Yusuf Wicaksono,Gagus Ketut Sunnardianto,Muhammad Aziz Majidi,Koichi Kusakabea###
(1857849, 1857852)
 Slabs withmagnetic alignment in an anti-parallel configuration (APC) and parallelconfiguration (PC) were considered.
Featurization successful!
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[71.0, 2, ',', 1],[68.0, 3, ',', 1],[65.0, 4, ',', 1],[61.0, 5, 'as', 1],[114.0, 2, 'and', 2],[128.0, 2, ',', 2],[243.0, 2, ',', 4],[390.0, 1200, '%', 6]

Ni
###High magnetoresistance of hexagonal boron nitride-graphene heterostructure-based MTJ through excited-electron transmission|Halimah Harfah,Yusuf Wicaksono,Gagus Ketut Sunnardianto,Muhammad Aziz Majidi,Koichi Kusakabea###
(1857884, 1857884)
 The pd-hybridizations at both the upper andlower interfaces between the Ni slabs and h<missing VAR>BN were found to stabilize thesystem.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[106.0, 2, ',', 2],[103.0, 3, ',', 2],[100.0, 4, ',', 2],[96.0, 5, 'as', 2],[82.0, 2, 'and', 1],[96.0, 2, ',', 1],[211.0, 2, ',', 3],[358.0, 1200, '%', 5]

BN
###High magnetoresistance of hexagonal boron nitride-graphene heterostructure-based MTJ through excited-electron transmission|Halimah Harfah,Yusuf Wicaksono,Gagus Ketut Sunnardianto,Muhammad Aziz Majidi,Koichi Kusakabea###
(1857891, 1857892)
 The pd-hybridizations at both the upper andlower interfaces between the Ni slabs and h<missing VAR>BN were found to stabilize thesystem.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[113.0, 2, ',', 2],[110.0, 3, ',', 2],[107.0, 4, ',', 2],[103.0, 5, 'as', 2],[74.0, 2, 'and', 1],[88.0, 2, ',', 1],[203.0, 2, ',', 3],[350.0, 1200, '%', 5]

Ni
###High magnetoresistance of hexagonal boron nitride-graphene heterostructure-based MTJ through excited-electron transmission|Halimah Harfah,Yusuf Wicaksono,Gagus Ketut Sunnardianto,Muhammad Aziz Majidi,Koichi Kusakabea###
(1857910, 1857910)
 The Ni/nhBN/Ni magnetic tunnel junction (MTJ) was found to exhibit ahigh tunneling magnetoresistance (TMR) ratio at 0.28 e<missing VAR>V for n<missing VAR>  2 and 0.34e<missing VAR>V for n<missing VAR> > 2, which are slightly higher than the Fermi energy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[132.0, 2, ',', 3],[129.0, 3, ',', 3],[126.0, 4, ',', 3],[122.0, 5, 'as', 3],[56.0, 2, 'and', 0],[70.0, 2, ',', 0],[185.0, 2, ',', 2],[332.0, 1200, '%', 4]

BN/Ni
###High magnetoresistance of hexagonal boron nitride-graphene heterostructure-based MTJ through excited-electron transmission|Halimah Harfah,Yusuf Wicaksono,Gagus Ketut Sunnardianto,Muhammad Aziz Majidi,Koichi Kusakabea###
(1857913, 1857916)
 The Ni/nhBN/Ni magnetic tunnel junction (MTJ) was found to exhibit ahigh tunneling magnetoresistance (TMR) ratio at 0.28 e<missing VAR>V for n<missing VAR>  2 and 0.34e<missing VAR>V for n<missing VAR> > 2, which are slightly higher than the Fermi energy.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[135.0, 2, ',', 3],[132.0, 3, ',', 3],[129.0, 4, ',', 3],[125.0, 5, 'as', 3],[50.0, 2, 'and', 0],[64.0, 2, ',', 0],[179.0, 2, ',', 2],[326.0, 1200, '%', 4]

V
###High magnetoresistance of hexagonal boron nitride-graphene heterostructure-based MTJ through excited-electron transmission|Halimah Harfah,Yusuf Wicaksono,Gagus Ketut Sunnardianto,Muhammad Aziz Majidi,Koichi Kusakabea###
(1857960, 1857960)
 The Ni/nhBN/Ni magnetic tunnel junction (MTJ) was found to exhibit ahigh tunneling magnetoresistance (TMR) ratio at 0.28 e<missing VAR>V for n<missing VAR>  2 and 0.34e<missing VAR>V for n<missing VAR> > 2, which are slightly higher than the Fermi energy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[182.0, 2, ',', 3],[179.0, 3, ',', 3],[176.0, 4, ',', 3],[172.0, 5, 'as', 3],[6.0, 2, 'and', 0],[20.0, 2, ',', 0],[135.0, 2, ',', 2],[282.0, 1200, '%', 4]

V
###High magnetoresistance of hexagonal boron nitride-graphene heterostructure-based MTJ through excited-electron transmission|Halimah Harfah,Yusuf Wicaksono,Gagus Ketut Sunnardianto,Muhammad Aziz Majidi,Koichi Kusakabea###
(1857972, 1857972)
 The Ni/nhBN/Ni magnetic tunnel junction (MTJ) was found to exhibit ahigh tunneling magnetoresistance (TMR) ratio at 0.28 e<missing VAR>V for n<missing VAR>  2 and 0.34e<missing VAR>V for n<missing VAR> > 2, which are slightly higher than the Fermi energy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[194.0, 2, ',', 3],[191.0, 3, ',', 3],[188.0, 4, ',', 3],[184.0, 5, 'as', 3],[6.0, 2, 'and', 0],[8.0, 2, ',', 0],[123.0, 2, ',', 2],[270.0, 1200, '%', 4]

Ni
###High magnetoresistance of hexagonal boron nitride-graphene heterostructure-based MTJ through excited-electron transmission|Halimah Harfah,Yusuf Wicaksono,Gagus Ketut Sunnardianto,Muhammad Aziz Majidi,Koichi Kusakabea###
(1858052, 1858052)
 The observedshifting of this high TMR ratio originates from the transmission of electronsthrough the surface states of the dz2-orbital of Ni atoms at interfaceswhich are hybridized with the pz-orbital of N atoms.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[274.0, 2, ',', 4],[271.0, 3, ',', 4],[268.0, 4, ',', 4],[264.0, 5, 'as', 4],[86.0, 2, 'and', 1],[72.0, 2, ',', 1],[43.0, 2, ',', 1],[190.0, 1200, '%', 3]

N
###High magnetoresistance of hexagonal boron nitride-graphene heterostructure-based MTJ through excited-electron transmission|Halimah Harfah,Yusuf Wicaksono,Gagus Ketut Sunnardianto,Muhammad Aziz Majidi,Koichi Kusakabea###
(1858078, 1858078)
 The observedshifting of this high TMR ratio originates from the transmission of electronsthrough the surface states of the dz2-orbital of Ni atoms at interfaceswhich are hybridized with the pz-orbital of N atoms.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[300.0, 2, ',', 4],[297.0, 3, ',', 4],[294.0, 4, ',', 4],[290.0, 5, 'as', 4],[112.0, 2, 'and', 1],[98.0, 2, ',', 1],[17.0, 2, ',', 1],[164.0, 1200, '%', 3]

In
###High magnetoresistance of hexagonal boron nitride-graphene heterostructure-based MTJ through excited-electron transmission|Halimah Harfah,Yusuf Wicaksono,Gagus Ketut Sunnardianto,Muhammad Aziz Majidi,Koichi Kusakabea###
(1858083, 1858083)
 In the case of n<missing VAR> > 2,the proximity effect causes an evanescent wave, contributing to decreasingtransmission probability but increasing the TMR ratio.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[305.0, 2, ',', 5],[302.0, 3, ',', 5],[299.0, 4, ',', 5],[295.0, 5, 'as', 5],[117.0, 2, 'and', 2],[103.0, 2, ',', 2],[12.0, 2, ',', 0],[159.0, 1200, '%', 2]

BN
###High magnetoresistance of hexagonal boron nitride-graphene heterostructure-based MTJ through excited-electron transmission|Halimah Harfah,Yusuf Wicaksono,Gagus Ketut Sunnardianto,Muhammad Aziz Majidi,Koichi Kusakabea###
(1858181, 1858182)
 However, TMR ratio, aswell as transmission probability, was found to be increased, by replacing theunhybridized h<missing VAR>BN layer of the Ni/3h<missing VAR>BN/Ni MTJ with graphene, thus becomingNi/h<missing VAR>BN-Gr-h<missing VAR>BN/Ni.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[403.0, 2, ',', 6],[400.0, 3, ',', 6],[397.0, 4, ',', 6],[393.0, 5, 'as', 6],[215.0, 2, 'and', 3],[201.0, 2, ',', 3],[86.0, 2, ',', 1],[60.0, 1200, '%', 1]

Ni
###High magnetoresistance of hexagonal boron nitride-graphene heterostructure-based MTJ through excited-electron transmission|Halimah Harfah,Yusuf Wicaksono,Gagus Ketut Sunnardianto,Muhammad Aziz Majidi,Koichi Kusakabea###
(1858190, 1858190)
 However, TMR ratio, aswell as transmission probability, was found to be increased, by replacing theunhybridized h<missing VAR>BN layer of the Ni/3h<missing VAR>BN/Ni MTJ with graphene, thus becomingNi/h<missing VAR>BN-Gr-h<missing VAR>BN/Ni.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[412.0, 2, ',', 6],[409.0, 3, ',', 6],[406.0, 4, ',', 6],[402.0, 5, 'as', 6],[224.0, 2, 'and', 3],[210.0, 2, ',', 3],[95.0, 2, ',', 1],[52.0, 1200, '%', 1]

BN/Ni
###High magnetoresistance of hexagonal boron nitride-graphene heterostructure-based MTJ through excited-electron transmission|Halimah Harfah,Yusuf Wicaksono,Gagus Ketut Sunnardianto,Muhammad Aziz Majidi,Koichi Kusakabea###
(1858194, 1858197)
 However, TMR ratio, aswell as transmission probability, was found to be increased, by replacing theunhybridized h<missing VAR>BN layer of the Ni/3h<missing VAR>BN/Ni MTJ with graphene, thus becomingNi/h<missing VAR>BN-Gr-h<missing VAR>BN/Ni.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[416.0, 2, ',', 6],[413.0, 3, ',', 6],[410.0, 4, ',', 6],[406.0, 5, 'as', 6],[228.0, 2, 'and', 3],[214.0, 2, ',', 3],[99.0, 2, ',', 1],[45.0, 1200, '%', 1]

Ni
###High magnetoresistance of hexagonal boron nitride-graphene heterostructure-based MTJ through excited-electron transmission|Halimah Harfah,Yusuf Wicaksono,Gagus Ketut Sunnardianto,Muhammad Aziz Majidi,Koichi Kusakabea###
(1858213, 1858213)
 However, TMR ratio, aswell as transmission probability, was found to be increased, by replacing theunhybridized h<missing VAR>BN layer of the Ni/3h<missing VAR>BN/Ni MTJ with graphene, thus becomingNi/h<missing VAR>BN-Gr-h<missing VAR>BN/Ni.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[435.0, 2, ',', 6],[432.0, 3, ',', 6],[429.0, 4, ',', 6],[425.0, 5, 'as', 6],[247.0, 2, 'and', 3],[233.0, 2, ',', 3],[118.0, 2, ',', 1],[29.0, 1200, '%', 1]

BN
###High magnetoresistance of hexagonal boron nitride-graphene heterostructure-based MTJ through excited-electron transmission|Halimah Harfah,Yusuf Wicaksono,Gagus Ketut Sunnardianto,Muhammad Aziz Majidi,Koichi Kusakabea###
(1858216, 1858217)
 However, TMR ratio, aswell as transmission probability, was found to be increased, by replacing theunhybridized h<missing VAR>BN layer of the Ni/3h<missing VAR>BN/Ni MTJ with graphene, thus becomingNi/h<missing VAR>BN-Gr-h<missing VAR>BN/Ni.
Featurization terminated normally.
0,0,0,0,0.5,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[438.0, 2, ',', 6],[435.0, 3, ',', 6],[432.0, 4, ',', 6],[428.0, 5, 'as', 6],[250.0, 2, 'and', 3],[236.0, 2, ',', 3],[121.0, 2, ',', 1],[25.0, 1200, '%', 1]

BN/Ni
###High magnetoresistance of hexagonal boron nitride-graphene heterostructure-based MTJ through excited-electron transmission|Halimah Harfah,Yusuf Wicaksono,Gagus Ketut Sunnardianto,Muhammad Aziz Majidi,Koichi Kusakabea###
(1858222, 1858225)
 However, TMR ratio, aswell as transmission probability, was found to be increased, by replacing theunhybridized h<missing VAR>BN layer of the Ni/3h<missing VAR>BN/Ni MTJ with graphene, thus becomingNi/h<missing VAR>BN-Gr-h<missing VAR>BN/Ni.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[444.0, 2, ',', 6],[441.0, 3, ',', 6],[438.0, 4, ',', 6],[434.0, 5, 'as', 6],[256.0, 2, 'and', 3],[242.0, 2, ',', 3],[127.0, 2, ',', 1],[17.0, 1200, '%', 1]

V
###High magnetoresistance of hexagonal boron nitride-graphene heterostructure-based MTJ through excited-electron transmission|Halimah Harfah,Yusuf Wicaksono,Gagus Ketut Sunnardianto,Muhammad Aziz Majidi,Koichi Kusakabea###
(1858261, 1858261)
 A TMR ratio as high as 1200% was observed at an energy of0.34 e<missing VAR>V, which is higher than the Fermi energy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[483.0, 2, ',', 7],[480.0, 3, ',', 7],[477.0, 4, ',', 7],[473.0, 5, 'as', 7],[295.0, 2, 'and', 4],[281.0, 2, ',', 4],[166.0, 2, ',', 2],[19.0, 1200, '%', 0]

SO
###Roadmap of spin-orbit torques|Qiming Shao,Peng Li,Luqiao Liu,Hyunsoo Yang,Shunsuke Fukami,Armin Razavi,Hao Wu,Kang L. Wang,Frank Freimuth,Yuriy Mokrousov,Mark D. Stiles,Satoru Emori,Axel Hoffmann,Johan Åkerman,Kaushik Roy,Jian-Ping Wang,See-Hun Yang,Kevin Garello,Wei Zhang###
(1858361, 1858362)
 Spin-orbit torque (SOT) is an emerging technology that enables the efficientmanipulation of spintronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Roadmap of spin-orbit torques|Qiming Shao,Peng Li,Luqiao Liu,Hyunsoo Yang,Shunsuke Fukami,Armin Razavi,Hao Wu,Kang L. Wang,Frank Freimuth,Yuriy Mokrousov,Mark D. Stiles,Satoru Emori,Axel Hoffmann,Johan Åkerman,Kaushik Roy,Jian-Ping Wang,See-Hun Yang,Kevin Garello,Wei Zhang###
(1858404, 1858405)
 The initial processes of interest in SOTsinvolved electric fields, spin-orbit coupling, conduction electron spins andmagnetization.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Roadmap of spin-orbit torques|Qiming Shao,Peng Li,Luqiao Liu,Hyunsoo Yang,Shunsuke Fukami,Armin Razavi,Hao Wu,Kang L. Wang,Frank Freimuth,Yuriy Mokrousov,Mark D. Stiles,Satoru Emori,Axel Hoffmann,Johan Åkerman,Kaushik Roy,Jian-Ping Wang,See-Hun Yang,Kevin Garello,Wei Zhang###
(1858503, 1858504)
 Over the past decade, manymaterials have been explored to achieve a larger SOT<missing VAR> efficiency.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Roadmap of spin-orbit torques|Qiming Shao,Peng Li,Luqiao Liu,Hyunsoo Yang,Shunsuke Fukami,Armin Razavi,Hao Wu,Kang L. Wang,Frank Freimuth,Yuriy Mokrousov,Mark D. Stiles,Satoru Emori,Axel Hoffmann,Johan Åkerman,Kaushik Roy,Jian-Ping Wang,See-Hun Yang,Kevin Garello,Wei Zhang###
(1858528, 1858529)
 Recently,holistic design to maximize the performance of SOT<missing VAR> devices has extendedmaterial research from a nonmagnetic layer to a magnetic layer.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Roadmap of spin-orbit torques|Qiming Shao,Peng Li,Luqiao Liu,Hyunsoo Yang,Shunsuke Fukami,Armin Razavi,Hao Wu,Kang L. Wang,Frank Freimuth,Yuriy Mokrousov,Mark D. Stiles,Satoru Emori,Axel Hoffmann,Johan Åkerman,Kaushik Roy,Jian-Ping Wang,See-Hun Yang,Kevin Garello,Wei Zhang###
(1858569, 1858570)
 The rapiddevelopment of SOT<missing VAR> has spurred a variety of SOT<missing VAR>-based applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Roadmap of spin-orbit torques|Qiming Shao,Peng Li,Luqiao Liu,Hyunsoo Yang,Shunsuke Fukami,Armin Razavi,Hao Wu,Kang L. Wang,Frank Freimuth,Yuriy Mokrousov,Mark D. Stiles,Satoru Emori,Axel Hoffmann,Johan Åkerman,Kaushik Roy,Jian-Ping Wang,See-Hun Yang,Kevin Garello,Wei Zhang###
(1858583, 1858584)
 The rapiddevelopment of SOT<missing VAR> has spurred a variety of SOT<missing VAR>-based applications.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Roadmap of spin-orbit torques|Qiming Shao,Peng Li,Luqiao Liu,Hyunsoo Yang,Shunsuke Fukami,Armin Razavi,Hao Wu,Kang L. Wang,Frank Freimuth,Yuriy Mokrousov,Mark D. Stiles,Satoru Emori,Axel Hoffmann,Johan Åkerman,Kaushik Roy,Jian-Ping Wang,See-Hun Yang,Kevin Garello,Wei Zhang###
(1858592, 1858592)
 In thisRoadmap paper, we first review the theories of SOTs by introducing the variousmechanisms thought to generate or control SOTs, such as the spin Hall effect,the Rashba-Edelstein effect, the orbital Hall effect, thermal gradients,magnons, and strain effects.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Roadmap of spin-orbit torques|Qiming Shao,Peng Li,Luqiao Liu,Hyunsoo Yang,Shunsuke Fukami,Armin Razavi,Hao Wu,Kang L. Wang,Frank Freimuth,Yuriy Mokrousov,Mark D. Stiles,Satoru Emori,Axel Hoffmann,Johan Åkerman,Kaushik Roy,Jian-Ping Wang,See-Hun Yang,Kevin Garello,Wei Zhang###
(1858614, 1858615)
 In thisRoadmap paper, we first review the theories of SOTs by introducing the variousmechanisms thought to generate or control SOTs, such as the spin Hall effect,the Rashba-Edelstein effect, the orbital Hall effect, thermal gradients,magnons, and strain effects.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Roadmap of spin-orbit torques|Qiming Shao,Peng Li,Luqiao Liu,Hyunsoo Yang,Shunsuke Fukami,Armin Razavi,Hao Wu,Kang L. Wang,Frank Freimuth,Yuriy Mokrousov,Mark D. Stiles,Satoru Emori,Axel Hoffmann,Johan Åkerman,Kaushik Roy,Jian-Ping Wang,See-Hun Yang,Kevin Garello,Wei Zhang###
(1858639, 1858640)
 In thisRoadmap paper, we first review the theories of SOTs by introducing the variousmechanisms thought to generate or control SOTs, such as the spin Hall effect,the Rashba-Edelstein effect, the orbital Hall effect, thermal gradients,magnons, and strain effects.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Roadmap of spin-orbit torques|Qiming Shao,Peng Li,Luqiao Liu,Hyunsoo Yang,Shunsuke Fukami,Armin Razavi,Hao Wu,Kang L. Wang,Frank Freimuth,Yuriy Mokrousov,Mark D. Stiles,Satoru Emori,Axel Hoffmann,Johan Åkerman,Kaushik Roy,Jian-Ping Wang,See-Hun Yang,Kevin Garello,Wei Zhang###
(1858758, 1858759)
 We also discuss the importantroles in SOT<missing VAR> devices of different types of magnetic layers.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Roadmap of spin-orbit torques|Qiming Shao,Peng Li,Luqiao Liu,Hyunsoo Yang,Shunsuke Fukami,Armin Razavi,Hao Wu,Kang L. Wang,Frank Freimuth,Yuriy Mokrousov,Mark D. Stiles,Satoru Emori,Axel Hoffmann,Johan Åkerman,Kaushik Roy,Jian-Ping Wang,See-Hun Yang,Kevin Garello,Wei Zhang###
(1858791, 1858792)
 Afterward, wediscuss device applications utilizing SOTs.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Roadmap of spin-orbit torques|Qiming Shao,Peng Li,Luqiao Liu,Hyunsoo Yang,Shunsuke Fukami,Armin Razavi,Hao Wu,Kang L. Wang,Frank Freimuth,Yuriy Mokrousov,Mark D. Stiles,Satoru Emori,Axel Hoffmann,Johan Åkerman,Kaushik Roy,Jian-Ping Wang,See-Hun Yang,Kevin Garello,Wei Zhang###
(1858815, 1858816)
 We discuss and comparethree-terminal and two-terminal SOT<missing VAR>-magnetoresistive random-access memories(MRAMs); we mention various schemes to eliminate the need for an externalfield.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Roadmap of spin-orbit torques|Qiming Shao,Peng Li,Luqiao Liu,Hyunsoo Yang,Shunsuke Fukami,Armin Razavi,Hao Wu,Kang L. Wang,Frank Freimuth,Yuriy Mokrousov,Mark D. Stiles,Satoru Emori,Axel Hoffmann,Johan Åkerman,Kaushik Roy,Jian-Ping Wang,See-Hun Yang,Kevin Garello,Wei Zhang###
(1858874, 1858875)
 We provide technological application considerations for SOT-MRAM<missing VAR> andgive perspectives on SOT<missing VAR>-based neuromorphic devices and circuits.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Roadmap of spin-orbit torques|Qiming Shao,Peng Li,Luqiao Liu,Hyunsoo Yang,Shunsuke Fukami,Armin Razavi,Hao Wu,Kang L. Wang,Frank Freimuth,Yuriy Mokrousov,Mark D. Stiles,Satoru Emori,Axel Hoffmann,Johan Åkerman,Kaushik Roy,Jian-Ping Wang,See-Hun Yang,Kevin Garello,Wei Zhang###
(1858892, 1858893)
 We provide technological application considerations for SOT-MRAM<missing VAR> andgive perspectives on SOT<missing VAR>-based neuromorphic devices and circuits.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Roadmap of spin-orbit torques|Qiming Shao,Peng Li,Luqiao Liu,Hyunsoo Yang,Shunsuke Fukami,Armin Razavi,Hao Wu,Kang L. Wang,Frank Freimuth,Yuriy Mokrousov,Mark D. Stiles,Satoru Emori,Axel Hoffmann,Johan Åkerman,Kaushik Roy,Jian-Ping Wang,See-Hun Yang,Kevin Garello,Wei Zhang###
(1858907, 1858907)
 In additionto SOT-MRAM<missing VAR>, we present SOT<missing VAR>-based spintronic terahertz generators,nano-oscillators, and domain wall and skyrmion racetrack memories.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Roadmap of spin-orbit torques|Qiming Shao,Peng Li,Luqiao Liu,Hyunsoo Yang,Shunsuke Fukami,Armin Razavi,Hao Wu,Kang L. Wang,Frank Freimuth,Yuriy Mokrousov,Mark D. Stiles,Satoru Emori,Axel Hoffmann,Johan Åkerman,Kaushik Roy,Jian-Ping Wang,See-Hun Yang,Kevin Garello,Wei Zhang###
(1858914, 1858915)
 In additionto SOT-MRAM<missing VAR>, we present SOT<missing VAR>-based spintronic terahertz generators,nano-oscillators, and domain wall and skyrmion racetrack memories.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Roadmap of spin-orbit torques|Qiming Shao,Peng Li,Luqiao Liu,Hyunsoo Yang,Shunsuke Fukami,Armin Razavi,Hao Wu,Kang L. Wang,Frank Freimuth,Yuriy Mokrousov,Mark D. Stiles,Satoru Emori,Axel Hoffmann,Johan Åkerman,Kaushik Roy,Jian-Ping Wang,See-Hun Yang,Kevin Garello,Wei Zhang###
(1858928, 1858929)
 In additionto SOT-MRAM<missing VAR>, we present SOT<missing VAR>-based spintronic terahertz generators,nano-oscillators, and domain wall and skyrmion racetrack memories.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Roadmap of spin-orbit torques|Qiming Shao,Peng Li,Luqiao Liu,Hyunsoo Yang,Shunsuke Fukami,Armin Razavi,Hao Wu,Kang L. Wang,Frank Freimuth,Yuriy Mokrousov,Mark D. Stiles,Satoru Emori,Axel Hoffmann,Johan Åkerman,Kaushik Roy,Jian-Ping Wang,See-Hun Yang,Kevin Garello,Wei Zhang###
(1858981, 1858982)
 This paperaims to achieve a comprehensive review of SOT<missing VAR> theory, materials, andapplications, guiding future SOT<missing VAR> development in both the academic andindustrial sectors.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Roadmap of spin-orbit torques|Qiming Shao,Peng Li,Luqiao Liu,Hyunsoo Yang,Shunsuke Fukami,Armin Razavi,Hao Wu,Kang L. Wang,Frank Freimuth,Yuriy Mokrousov,Mark D. Stiles,Satoru Emori,Axel Hoffmann,Johan Åkerman,Kaushik Roy,Jian-Ping Wang,See-Hun Yang,Kevin Garello,Wei Zhang###
(1859001, 1859002)
 This paperaims to achieve a comprehensive review of SOT<missing VAR> theory, materials, andapplications, guiding future SOT<missing VAR> development in both the academic andindustrial sectors.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrRuO3
###Anisotropy and Current Control of Magnetization in SrRuO$_3$ SrTiO$_3$ Heterostructures for Spin-Memristors|A. S. Goossens,M. A. T. Leiviskä,T. Banerjee###
(1859045, 1859048)
Anisotropy and Current Control of Magnetization in SrRuO3 SrTiO3 Heterostructures for Spin-Memristors.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Anisotropy and Current Control of Magnetization in SrRuO$_3$ SrTiO$_3$ Heterostructures for Spin-Memristors|A. S. Goossens,M. A. T. Leiviskä,T. Banerjee###
(1859050, 1859053)
Anisotropy and Current Control of Magnetization in SrRuO3 SrTiO3 Heterostructures for Spin-Memristors.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Anisotropy and Current Control of Magnetization in SrRuO$_3$ SrTiO$_3$ Heterostructures for Spin-Memristors|A. S. Goossens,M. A. T. Leiviskä,T. Banerjee###
(1859142, 1859142)
Complex oxide heterostructures with perpendicular magnetic anisotropy (PM<missing VAR>A),consisting of SrRuO3 (SR<missing VAR>O) grown on SrTiO3 (ST<missing VAR>O) are strong materialcontenders.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrRuO3
###Anisotropy and Current Control of Magnetization in SrRuO$_3$ SrTiO$_3$ Heterostructures for Spin-Memristors|A. S. Goossens,M. A. T. Leiviskä,T. Banerjee###
(1859153, 1859156)
Complex oxide heterostructures with perpendicular magnetic anisotropy (PM<missing VAR>A),consisting of SrRuO3 (SR<missing VAR>O) grown on SrTiO3 (ST<missing VAR>O) are strong materialcontenders.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Anisotropy and Current Control of Magnetization in SrRuO$_3$ SrTiO$_3$ Heterostructures for Spin-Memristors|A. S. Goossens,M. A. T. Leiviskä,T. Banerjee###
(1859159, 1859159)
Complex oxide heterostructures with perpendicular magnetic anisotropy (PM<missing VAR>A),consisting of SrRuO3 (SR<missing VAR>O) grown on SrTiO3 (ST<missing VAR>O) are strong materialcontenders.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Anisotropy and Current Control of Magnetization in SrRuO$_3$ SrTiO$_3$ Heterostructures for Spin-Memristors|A. S. Goossens,M. A. T. Leiviskä,T. Banerjee###
(1859161, 1859161)
Complex oxide heterostructures with perpendicular magnetic anisotropy (PM<missing VAR>A),consisting of SrRuO3 (SR<missing VAR>O) grown on SrTiO3 (ST<missing VAR>O) are strong materialcontenders.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SrTiO3
###Anisotropy and Current Control of Magnetization in SrRuO$_3$ SrTiO$_3$ Heterostructures for Spin-Memristors|A. S. Goossens,M. A. T. Leiviskä,T. Banerjee###
(1859168, 1859171)
Complex oxide heterostructures with perpendicular magnetic anisotropy (PM<missing VAR>A),consisting of SrRuO3 (SR<missing VAR>O) grown on SrTiO3 (ST<missing VAR>O) are strong materialcontenders.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Anisotropy and Current Control of Magnetization in SrRuO$_3$ SrTiO$_3$ Heterostructures for Spin-Memristors|A. S. Goossens,M. A. T. Leiviskä,T. Banerjee###
(1859174, 1859174)
Complex oxide heterostructures with perpendicular magnetic anisotropy (PM<missing VAR>A),consisting of SrRuO3 (SR<missing VAR>O) grown on SrTiO3 (ST<missing VAR>O) are strong materialcontenders.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Anisotropy and Current Control of Magnetization in SrRuO$_3$ SrTiO$_3$ Heterostructures for Spin-Memristors|A. S. Goossens,M. A. T. Leiviskä,T. Banerjee###
(1859176, 1859176)
Complex oxide heterostructures with perpendicular magnetic anisotropy (PM<missing VAR>A),consisting of SrRuO3 (SR<missing VAR>O) grown on SrTiO3 (ST<missing VAR>O) are strong materialcontenders.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Anisotropy and Current Control of Magnetization in SrRuO$_3$ SrTiO$_3$ Heterostructures for Spin-Memristors|A. S. Goossens,M. A. T. Leiviskä,T. Banerjee###
(1859234, 1859234)
 Utilizing the crystal orientation, magnetic anisotropy in suchsimple heterostructures can be tuned to either exhibit a perfect or slightlytilted PM<missing VAR>A.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(Pt)
###Anisotropy and Current Control of Magnetization in SrRuO$_3$ SrTiO$_3$ Heterostructures for Spin-Memristors|A. S. Goossens,M. A. T. Leiviskä,T. Banerjee###
(1859282, 1859284)
 Here, we investigate current-induced magnetization modulation insuch tailored ferromagnetic layers with a material with strong spin-orbitcoupling (Pt), exploiting the spin Hall effect.
Featurization successful!
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Anisotropy and Current Control of Magnetization in SrRuO$_3$ SrTiO$_3$ Heterostructures for Spin-Memristors|A. S. Goossens,M. A. T. Leiviskä,T. Banerjee###
(1859319, 1859319)
 We find significant differencesin the magnetic anisotropy between the SR<missing VAR>O/ST<missing VAR>O heterostructures, as manifestedin the first and second harmonic magnetoresistance measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O/S
###Anisotropy and Current Control of Magnetization in SrRuO$_3$ SrTiO$_3$ Heterostructures for Spin-Memristors|A. S. Goossens,M. A. T. Leiviskä,T. Banerjee###
(1859321, 1859323)
 We find significant differencesin the magnetic anisotropy between the SR<missing VAR>O/ST<missing VAR>O heterostructures, as manifestedin the first and second harmonic magnetoresistance measurements.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
Abstract does not contain any numbers.

O
###Anisotropy and Current Control of Magnetization in SrRuO$_3$ SrTiO$_3$ Heterostructures for Spin-Memristors|A. S. Goossens,M. A. T. Leiviskä,T. Banerjee###
(1859325, 1859325)
 We find significant differencesin the magnetic anisotropy between the SR<missing VAR>O/ST<missing VAR>O heterostructures, as manifestedin the first and second harmonic magnetoresistance measurements.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Anisotropy and Current Control of Magnetization in SrRuO$_3$ SrTiO$_3$ Heterostructures for Spin-Memristors|A. S. Goossens,M. A. T. Leiviskä,T. Banerjee###
(1859387, 1859387)
Current-induced magnetization switching can be realized with spin-orbittorques, but for systems with perfect PM<missing VAR>A this switching is probabilistic as aresult of the high symmetry.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

P
###Anisotropy and Current Control of Magnetization in SrRuO$_3$ SrTiO$_3$ Heterostructures for Spin-Memristors|A. S. Goossens,M. A. T. Leiviskä,T. Banerjee###
(1859423, 1859423)
 Slight tilting of the PM<missing VAR>A can break this symmetryand allow the realization of deterministic switching.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Anisotropy and Current Control of Magnetization in SrRuO$_3$ SrTiO$_3$ Heterostructures for Spin-Memristors|A. S. Goossens,M. A. T. Leiviskä,T. Banerjee###
(1859559, 1859560)
 Non-volatile states can be writtenthrough SOT<missing VAR> by applying an in-plane current, and read out as a tunnel currentby applying a small out-of-plane current.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###Anisotropy and Current Control of Magnetization in SrRuO$_3$ SrTiO$_3$ Heterostructures for Spin-Memristors|A. S. Goossens,M. A. T. Leiviskä,T. Banerjee###
(1859621, 1859621)
 Depending on the anisotropy of theSR<missing VAR>O layer, the writing mechanism is either deterministic or probabilisticallowing for different functionalities to emerge.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

O
###Anisotropy and Current Control of Magnetization in SrRuO$_3$ SrTiO$_3$ Heterostructures for Spin-Memristors|A. S. Goossens,M. A. T. Leiviskä,T. Banerjee###
(1859623, 1859623)
 Depending on the anisotropy of theSR<missing VAR>O layer, the writing mechanism is either deterministic or probabilisticallowing for different functionalities to emerge.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###A strange metal in a bosonic system|Chao Yang,Haiwen Liu,Yi Liu,Jiandong Wang,Sishuang Wang,Yang Wang,Qianmei He,Yue Tang,Jian Wang,X. C. Xie,James M. Valles Jr.,Jie Xiong,Yanrong Li###
(1859906, 1859906)
 When electronscattering rate 1/tau hits its limit, kBT/hbar where hbar is thereduced Plancks<missing VAR> constant, T<missing VAR> represents absolute temperature and k<missing VAR>B denotesBoltzmanns<missing VAR> constant, Planckian dissipation occurs and lends strange metals asurprising link to black holes, gravity, and quantum information theory.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

YBa2Cu3O7
###A strange metal in a bosonic system|Chao Yang,Haiwen Liu,Yi Liu,Jiandong Wang,Sishuang Wang,Yang Wang,Qianmei He,Yue Tang,Jian Wang,X. C. Xie,James M. Valles Jr.,Jie Xiong,Yanrong Li###
(1859995, 1860001)
 Our nanopatterned YBa2Cu3O7-delta(YBCO)film arrays reveal T<missing VAR>-linear resistance as well as B-linear magnetoresistanceover an extended temperature and magnetic field range in a quantum criticalregion in the phase diagram.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5384615384615384,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.23076923076923078,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.15384615384615385,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

(YBCO)
###A strange metal in a bosonic system|Chao Yang,Haiwen Liu,Yi Liu,Jiandong Wang,Sishuang Wang,Yang Wang,Qianmei He,Yue Tang,Jian Wang,X. C. Xie,James M. Valles Jr.,Jie Xiong,Yanrong Li###
(1860004, 1860009)
 Our nanopatterned YBa2Cu3O7-delta(YBCO)film arrays reveal T<missing VAR>-linear resistance as well as B-linear magnetoresistanceover an extended temperature and magnetic field range in a quantum criticalregion in the phase diagram.
Featurization successful!
0,0,0,0,0.25,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###A strange metal in a bosonic system|Chao Yang,Haiwen Liu,Yi Liu,Jiandong Wang,Sishuang Wang,Yang Wang,Qianmei He,Yue Tang,Jian Wang,X. C. Xie,James M. Valles Jr.,Jie Xiong,Yanrong Li###
(1860030, 1860030)
 Our nanopatterned YBa2Cu3O7-delta(YBCO)film arrays reveal T<missing VAR>-linear resistance as well as B-linear magnetoresistanceover an extended temperature and magnetic field range in a quantum criticalregion in the phase diagram.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###A strange metal in a bosonic system|Chao Yang,Haiwen Liu,Yi Liu,Jiandong Wang,Sishuang Wang,Yang Wang,Qianmei He,Yue Tang,Jian Wang,X. C. Xie,James M. Valles Jr.,Jie Xiong,Yanrong Li###
(1860166, 1860166)
Incontrast to fermionic systems where the temperature and magnetic fielddependent scattering rates combine in quadrature of hbar/tau approxsqrt (((k<missing VAR>B T)2(muB B)2)), both terms linearly combine in the presentbosonic system, i.e.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###A strange metal in a bosonic system|Chao Yang,Haiwen Liu,Yi Liu,Jiandong Wang,Sishuang Wang,Yang Wang,Qianmei He,Yue Tang,Jian Wang,X. C. Xie,James M. Valles Jr.,Jie Xiong,Yanrong Li###
(1860217, 1860217)
Incontrast to fermionic systems where the temperature and magnetic fielddependent scattering rates combine in quadrature of hbar/tau approxsqrt (((k<missing VAR>B T)2(muB B)2)), both terms linearly combine in the presentbosonic system, i.e.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###A strange metal in a bosonic system|Chao Yang,Haiwen Liu,Yi Liu,Jiandong Wang,Sishuang Wang,Yang Wang,Qianmei He,Yue Tang,Jian Wang,X. C. Xie,James M. Valles Jr.,Jie Xiong,Yanrong Li###
(1860224, 1860224)
Incontrast to fermionic systems where the temperature and magnetic fielddependent scattering rates combine in quadrature of hbar/tau approxsqrt (((k<missing VAR>B T)2(muB B)2)), both terms linearly combine in the presentbosonic system, i.e.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###A strange metal in a bosonic system|Chao Yang,Haiwen Liu,Yi Liu,Jiandong Wang,Sishuang Wang,Yang Wang,Qianmei He,Yue Tang,Jian Wang,X. C. Xie,James M. Valles Jr.,Jie Xiong,Yanrong Li###
(1860226, 1860226)
Incontrast to fermionic systems where the temperature and magnetic fielddependent scattering rates combine in quadrature of hbar/tau approxsqrt (((k<missing VAR>B T)2(muB B)2)), both terms linearly combine in the presentbosonic system, i.e.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###A strange metal in a bosonic system|Chao Yang,Haiwen Liu,Yi Liu,Jiandong Wang,Sishuang Wang,Yang Wang,Qianmei He,Yue Tang,Jian Wang,X. C. Xie,James M. Valles Jr.,Jie Xiong,Yanrong Li###
(1860266, 1860266)
 hbar/tau approx (k<missing VAR>B T<missing VAR>[gammamu]B B),where gamma is a constant.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###A strange metal in a bosonic system|Chao Yang,Haiwen Liu,Yi Liu,Jiandong Wang,Sishuang Wang,Yang Wang,Qianmei He,Yue Tang,Jian Wang,X. C. Xie,James M. Valles Jr.,Jie Xiong,Yanrong Li###
(1860273, 1860273)
 hbar/tau approx (k<missing VAR>B T<missing VAR>[gammamu]B B),where gamma is a constant.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

B
###A strange metal in a bosonic system|Chao Yang,Haiwen Liu,Yi Liu,Jiandong Wang,Sishuang Wang,Yang Wang,Qianmei He,Yue Tang,Jian Wang,X. C. Xie,James M. Valles Jr.,Jie Xiong,Yanrong Li###
(1860275, 1860275)
 hbar/tau approx (k<missing VAR>B T<missing VAR>[gammamu]B B),where gamma is a constant.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Unconventional spin Hall effects in nonmagnetic solids|Arunesh Roy,Marcos H. D. Guimarães,Jagoda Sławińska###
(1860445, 1860445)
 In the standardarrangement, applied electric field induces transverse spin current withperpendicular spin polarization.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[191.0, 230, 'space', 3]

In
###Unconventional spin Hall effects in nonmagnetic solids|Arunesh Roy,Marcos H. D. Guimarães,Jagoda Sławińska###
(1860773, 1860773)
 In addition, we have demonstrated thatunconventional spin Hall effect can be induced by controllable breaking thecrystal symmetries by an external electric field, which opens a perspective forexternal tuning of spin injection and detection by electric fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 230, 'space', 2]

C
###Materials and possible mechanisms of extremely large magnetoresistance: A review|Rui Niu,W. K. Zhu###
(1861116, 1861116)
Conventional large MR materials are mainly manganites, whose colossal MR (CMR)can be as high as -90%.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[16.0, -90, '%', 0],[127.0, -108, '%', 3]

In
###Materials and possible mechanisms of extremely large magnetoresistance: A review|Rui Niu,W. K. Zhu###
(1861181, 1861181)
 In recent years, some new systems have shown an extremelylarge unsaturated MR (XMR).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[49.0, -90, '%', 2],[62.0, -108, '%', 1]

In
###Materials and possible mechanisms of extremely large magnetoresistance: A review|Rui Niu,W. K. Zhu###
(1861440, 1861440)
 In addition, the researcheson XMR are largely overlapped or closely correlated with other recently risingphysics and materials researches, such as topological matters andtwo-dimensional (2D) materials, which makes elucidating the mechanism of XMReven more important.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[308.0, -90, '%', 7],[197.0, -108, '%', 4]

In
###Materials and possible mechanisms of extremely large magnetoresistance: A review|Rui Niu,W. K. Zhu###
(1861576, 1861576)
 Inthis review, we will discuss several aspects in the following order .
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[444.0, -90, '%', 9],[333.0, -108, '%', 6]

YbB12
###Hall anomaly, Quantum Oscillations and Possible Lifshitz Transitions in Kondo Insulator YbB$_{12}$: Evidence for Unconventional Charge Transport|Ziji Xiang,Kuan-Wen Chen,Lu Chen,Tomoya Asaba,Yuki Sato,Nan Zhang,Dechen Zhang,Yuichi Kasahara,Fumitoshi Iga,William A. Coniglio,Yuji Matsuda,John Singleton,Lu Li###
(1861637, 1861639)
Hall anomaly, Quantum Oscillations and Possible Lifshitz Transitions in Kondo Insulator YbB12 Evidence for Unconventional Charge Transport.
Featurization terminated normally.
0,0,0,0,0.9230769230769231,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[366.0, 35, 'T', 8],[407.0, -1.5, 'and', 8],[408.0, -2.0, 'By', 8]

In
###Hall anomaly, Quantum Oscillations and Possible Lifshitz Transitions in Kondo Insulator YbB$_{12}$: Evidence for Unconventional Charge Transport|Ziji Xiang,Kuan-Wen Chen,Lu Chen,Tomoya Asaba,Yuki Sato,Nan Zhang,Dechen Zhang,Yuichi Kasahara,Fumitoshi Iga,William A. Coniglio,Yuji Matsuda,John Singleton,Lu Li###
(1861652, 1861652)
 In correlated electronic systems, strong interactions and the interplaybetween different degrees of freedom may give rise to anomalous chargetransport properties, which can be tuned by external parameters liketemperature and magnetic field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[353.0, 35, 'T', 7],[394.0, -1.5, 'and', 7],[395.0, -2.0, 'By', 7]

YbB12
###Hall anomaly, Quantum Oscillations and Possible Lifshitz Transitions in Kondo Insulator YbB$_{12}$: Evidence for Unconventional Charge Transport|Ziji Xiang,Kuan-Wen Chen,Lu Chen,Tomoya Asaba,Yuki Sato,Nan Zhang,Dechen Zhang,Yuichi Kasahara,Fumitoshi Iga,William A. Coniglio,Yuji Matsuda,John Singleton,Lu Li###
(1861763, 1861765)
 Recently, magnetic quantum oscillations andmetallic low-temperature thermal conductivity have been observed in the Kondoinsulator YbB12, whose resistivity is a few orders of magnitude higherthan those of conventional metals.
Featurization terminated normally.
0,0,0,0,0.9230769230769231,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[240.0, 35, 'T', 6],[281.0, -1.5, 'and', 6],[282.0, -2.0, 'By', 6]

As
###Hall anomaly, Quantum Oscillations and Possible Lifshitz Transitions in Kondo Insulator YbB$_{12}$: Evidence for Unconventional Charge Transport|Ziji Xiang,Kuan-Wen Chen,Lu Chen,Tomoya Asaba,Yuki Sato,Nan Zhang,Dechen Zhang,Yuichi Kasahara,Fumitoshi Iga,William A. Coniglio,Yuji Matsuda,John Singleton,Lu Li###
(1861798, 1861798)
 As yet, these unusual observations are notfully understood.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[207.0, 35, 'T', 5],[248.0, -1.5, 'and', 5],[249.0, -2.0, 'By', 5]

YbB12
###Hall anomaly, Quantum Oscillations and Possible Lifshitz Transitions in Kondo Insulator YbB$_{12}$: Evidence for Unconventional Charge Transport|Ziji Xiang,Kuan-Wen Chen,Lu Chen,Tomoya Asaba,Yuki Sato,Nan Zhang,Dechen Zhang,Yuichi Kasahara,Fumitoshi Iga,William A. Coniglio,Yuji Matsuda,John Singleton,Lu Li###
(1861840, 1861842)
 Here we present a detailed investigation of the behavior ofYbB12 under intense magnetic fields using both transport and torquemagnetometry measurements.
Featurization terminated normally.
0,0,0,0,0.9230769230769231,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[163.0, 35, 'T', 4],[204.0, -1.5, 'and', 4],[205.0, -2.0, 'By', 4]

K
###Hall anomaly, Quantum Oscillations and Possible Lifshitz Transitions in Kondo Insulator YbB$_{12}$: Evidence for Unconventional Charge Transport|Ziji Xiang,Kuan-Wen Chen,Lu Chen,Tomoya Asaba,Yuki Sato,Nan Zhang,Dechen Zhang,Yuichi Kasahara,Fumitoshi Iga,William A. Coniglio,Yuji Matsuda,John Singleton,Lu Li###
(1861911, 1861911)
 A low-field Hall anomaly, reminiscent of the Hallresponse associated with strange-metal physics, develops at T<missing VAR> < 1.5 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 35, 'T', 3],[135.0, -1.5, 'and', 3],[136.0, -2.0, 'By', 3]

At
###Hall anomaly, Quantum Oscillations and Possible Lifshitz Transitions in Kondo Insulator YbB$_{12}$: Evidence for Unconventional Charge Transport|Ziji Xiang,Kuan-Wen Chen,Lu Chen,Tomoya Asaba,Yuki Sato,Nan Zhang,Dechen Zhang,Yuichi Kasahara,Fumitoshi Iga,William A. Coniglio,Yuji Matsuda,John Singleton,Lu Li###
(1861914, 1861914)
 Attwo characteristic magnetic fields (mu0H1 19.6 T<missing VAR> and mu0H2 sim 31T), signatures appear in the Hall coefficient, magnetic torque, andmagnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[91.0, 35, 'T', 2],[132.0, -1.5, 'and', 2],[133.0, -2.0, 'By', 2]

H1
###Hall anomaly, Quantum Oscillations and Possible Lifshitz Transitions in Kondo Insulator YbB$_{12}$: Evidence for Unconventional Charge Transport|Ziji Xiang,Kuan-Wen Chen,Lu Chen,Tomoya Asaba,Yuki Sato,Nan Zhang,Dechen Zhang,Yuichi Kasahara,Fumitoshi Iga,William A. Coniglio,Yuji Matsuda,John Singleton,Lu Li###
(1861928, 1861929)
 Attwo characteristic magnetic fields (mu0H1 19.6 T<missing VAR> and mu0H2 sim 31T), signatures appear in the Hall coefficient, magnetic torque, andmagnetoresistance.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[76.0, 35, 'T', 2],[117.0, -1.5, 'and', 2],[118.0, -2.0, 'By', 2]

H2
###Hall anomaly, Quantum Oscillations and Possible Lifshitz Transitions in Kondo Insulator YbB$_{12}$: Evidence for Unconventional Charge Transport|Ziji Xiang,Kuan-Wen Chen,Lu Chen,Tomoya Asaba,Yuki Sato,Nan Zhang,Dechen Zhang,Yuichi Kasahara,Fumitoshi Iga,William A. Coniglio,Yuji Matsuda,John Singleton,Lu Li###
(1861939, 1861940)
 Attwo characteristic magnetic fields (mu0H1 19.6 T<missing VAR> and mu0H2 sim 31T), signatures appear in the Hall coefficient, magnetic torque, andmagnetoresistance.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 35, 'T', 2],[106.0, -1.5, 'and', 2],[107.0, -2.0, 'By', 2]

YbB12
###Hall anomaly, Quantum Oscillations and Possible Lifshitz Transitions in Kondo Insulator YbB$_{12}$: Evidence for Unconventional Charge Transport|Ziji Xiang,Kuan-Wen Chen,Lu Chen,Tomoya Asaba,Yuki Sato,Nan Zhang,Dechen Zhang,Yuichi Kasahara,Fumitoshi Iga,William A. Coniglio,Yuji Matsuda,John Singleton,Lu Li###
(1862127, 1862129)
 Our results support a novel two-fluid scenario in YbB12 aFermi-liquid-like fluid of charge-neutral quasiparticles coexists with chargecarriers that remain in a nonmetallic state.
Featurization terminated normally.
0,0,0,0,0.9230769230769231,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.07692307692307693,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[122.0, 35, 'T', 1],[81.0, -1.5, 'and', 1],[80.0, -2.0, 'By', 1]

Sb
###Magnetotransport studies of the Sb square-net compound LaAgSb$_2$ under high pressure and rotating magnetic fields|Kazuto Akiba,Nobuaki Umeshita,Tatsuo C. Kobayashi###
(1862257, 1862257)
Magnetotransport studies of the Sb square-net compound LaAgSb2 under high pressure and rotating magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[166.0, 3.2, 'GPa', 3],[243.0, 3.5, 'GPa', 4]

LaAgSb2
###Magnetotransport studies of the Sb square-net compound LaAgSb$_2$ under high pressure and rotating magnetic fields|Kazuto Akiba,Nobuaki Umeshita,Tatsuo C. Kobayashi###
(1862265, 1862268)
Magnetotransport studies of the Sb square-net compound LaAgSb2 under high pressure and rotating magnetic fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0.5,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 3.2, 'GPa', 3],[232.0, 3.5, 'GPa', 4]

In
###Magnetotransport studies of the Sb square-net compound LaAgSb$_2$ under high pressure and rotating magnetic fields|Kazuto Akiba,Nobuaki Umeshita,Tatsuo C. Kobayashi###
(1862329, 1862329)
 In thisstudy, we investigated the magneto-transport properties of LaAgSb2, whichhas Sb-square-net layers and shows charge density wave (CD<missing VAR>W) transitions atambient pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[94.0, 3.2, 'GPa', 1],[171.0, 3.5, 'GPa', 2]

LaAgSb2
###Magnetotransport studies of the Sb square-net compound LaAgSb$_2$ under high pressure and rotating magnetic fields|Kazuto Akiba,Nobuaki Umeshita,Tatsuo C. Kobayashi###
(1862351, 1862354)
 In thisstudy, we investigated the magneto-transport properties of LaAgSb2, whichhas Sb-square-net layers and shows charge density wave (CD<missing VAR>W) transitions atambient pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0.5,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 3.2, 'GPa', 1],[146.0, 3.5, 'GPa', 2]

Sb
###Magnetotransport studies of the Sb square-net compound LaAgSb$_2$ under high pressure and rotating magnetic fields|Kazuto Akiba,Nobuaki Umeshita,Tatsuo C. Kobayashi###
(1862362, 1862362)
 In thisstudy, we investigated the magneto-transport properties of LaAgSb2, whichhas Sb-square-net layers and shows charge density wave (CD<missing VAR>W) transitions atambient pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 3.2, 'GPa', 1],[138.0, 3.5, 'GPa', 2]

C
###Magnetotransport studies of the Sb square-net compound LaAgSb$_2$ under high pressure and rotating magnetic fields|Kazuto Akiba,Nobuaki Umeshita,Tatsuo C. Kobayashi###
(1862381, 1862381)
 In thisstudy, we investigated the magneto-transport properties of LaAgSb2, whichhas Sb-square-net layers and shows charge density wave (CD<missing VAR>W) transitions atambient pressure.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 3.2, 'GPa', 1],[119.0, 3.5, 'GPa', 2]

W
###Magnetotransport studies of the Sb square-net compound LaAgSb$_2$ under high pressure and rotating magnetic fields|Kazuto Akiba,Nobuaki Umeshita,Tatsuo C. Kobayashi###
(1862383, 1862383)
 In thisstudy, we investigated the magneto-transport properties of LaAgSb2, whichhas Sb-square-net layers and shows charge density wave (CD<missing VAR>W) transitions atambient pressure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[40.0, 3.2, 'GPa', 1],[117.0, 3.5, 'GPa', 2]

C
###Magnetotransport studies of the Sb square-net compound LaAgSb$_2$ under high pressure and rotating magnetic fields|Kazuto Akiba,Nobuaki Umeshita,Tatsuo C. Kobayashi###
(1862408, 1862408)
 The application of pressure suppresses the CD<missing VAR>Ws, and above apressure of 3.2 GPa, a disordered phase with no CD<missing VAR>Ws is realized.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[15.0, 3.2, 'GPa', 0],[92.0, 3.5, 'GPa', 1]

C
###Magnetotransport studies of the Sb square-net compound LaAgSb$_2$ under high pressure and rotating magnetic fields|Kazuto Akiba,Nobuaki Umeshita,Tatsuo C. Kobayashi###
(1862436, 1862436)
 The application of pressure suppresses the CD<missing VAR>Ws, and above apressure of 3.2 GPa, a disordered phase with no CD<missing VAR>Ws is realized.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 3.2, 'GPa', 0],[64.0, 3.5, 'GPa', 1]

H
###Magnetotransport studies of the Sb square-net compound LaAgSb$_2$ under high pressure and rotating magnetic fields|Kazuto Akiba,Nobuaki Umeshita,Tatsuo C. Kobayashi###
(1862492, 1862492)
 By utilizinga mechanical rotator combined with a high-pressure cell, we observed theangular dependence of the Shubnikov-de Haas (SdH) oscillation up to 3.5 GPa andconfirmed the notable two-dimensional nature of the Fermi surface.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 3.2, 'GPa', 1],[8.0, 3.5, 'GPa', 0]

In
###Magnetotransport studies of the Sb square-net compound LaAgSb$_2$ under high pressure and rotating magnetic fields|Kazuto Akiba,Nobuaki Umeshita,Tatsuo C. Kobayashi###
(1862526, 1862526)
 In thedisordered phase, we also observed a remarkable field-angular-dependentmagnetoresistance (MR), which exhibited a butterfly-like polar pattern.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[103.0, 3.2, 'GPa', 2],[26.0, 3.5, 'GPa', 1]

H
###Magnetotransport studies of the Sb square-net compound LaAgSb$_2$ under high pressure and rotating magnetic fields|Kazuto Akiba,Nobuaki Umeshita,Tatsuo C. Kobayashi###
(1862623, 1862623)
 We showed that the SdH frequencyand Hall coefficient calculated based on the present Fermi surface model agreewell with the experiment.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[200.0, 3.2, 'GPa', 4],[123.0, 3.5, 'GPa', 3]

C
###Resonant Precession of Magnetization and Precession -- Induced DC voltages in FeGaB Thin Films|Prabesh Bajracharya,Vinay Sharma,Anthony Johnson,Ramesh C. Budhani###
(1862890, 1862890)
Resonant Precession of Magnetization and Precession -- Induced D<missing VAR>C voltages in FeGaB Thin Films.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[225.0, 8, 'nm', 3],[350.0, 54, 'n', 5],[500.0, 54, 'n', 8],[525.0, 90, '%', 9]

FeGaB
###Resonant Precession of Magnetization and Precession -- Induced DC voltages in FeGaB Thin Films|Prabesh Bajracharya,Vinay Sharma,Anthony Johnson,Ramesh C. Budhani###
(1862896, 1862898)
Resonant Precession of Magnetization and Precession -- Induced D<missing VAR>C voltages in FeGaB Thin Films.
Featurization terminated normally.
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[217.0, 8, 'nm', 3],[342.0, 54, 'n', 5],[492.0, 54, 'n', 8],[517.0, 90, '%', 9]

F
###Resonant Precession of Magnetization and Precession -- Induced DC voltages in FeGaB Thin Films|Prabesh Bajracharya,Vinay Sharma,Anthony Johnson,Ramesh C. Budhani###
(1862918, 1862918)
 Measurements of frequency dependent ferromagnetic resonance (FMR) and spinpumping driven dc voltage (Vdc) are reported for amorphous films ofFe78Ga13B9 (FeGaB) alloy to address the phenomenon of self-inducedinverse spin Hall effect (ISHE) in plain films of metallic ferromagnets.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[197.0, 8, 'nm', 2],[322.0, 54, 'n', 4],[472.0, 54, 'n', 7],[497.0, 90, '%', 8]

V
###Resonant Precession of Magnetization and Precession -- Induced DC voltages in FeGaB Thin Films|Prabesh Bajracharya,Vinay Sharma,Anthony Johnson,Ramesh C. Budhani###
(1862937, 1862937)
 Measurements of frequency dependent ferromagnetic resonance (FMR) and spinpumping driven dc voltage (Vdc) are reported for amorphous films ofFe78Ga13B9 (FeGaB) alloy to address the phenomenon of self-inducedinverse spin Hall effect (ISHE) in plain films of metallic ferromagnets.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 8, 'nm', 2],[303.0, 54, 'n', 4],[453.0, 54, 'n', 7],[478.0, 90, '%', 8]

Fe78Ga13B9
###Resonant Precession of Magnetization and Precession -- Induced DC voltages in FeGaB Thin Films|Prabesh Bajracharya,Vinay Sharma,Anthony Johnson,Ramesh C. Budhani###
(1862954, 1862959)
 Measurements of frequency dependent ferromagnetic resonance (FMR) and spinpumping driven dc voltage (Vdc) are reported for amorphous films ofFe78Ga13B9 (FeGaB) alloy to address the phenomenon of self-inducedinverse spin Hall effect (ISHE) in plain films of metallic ferromagnets.
Featurization terminated normally.
0,0,0,0,0.09,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.78,0,0,0,0,0.13,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[156.0, 8, 'nm', 2],[281.0, 54, 'n', 4],[431.0, 54, 'n', 7],[456.0, 90, '%', 8]

(FeGaB)
###Resonant Precession of Magnetization and Precession -- Induced DC voltages in FeGaB Thin Films|Prabesh Bajracharya,Vinay Sharma,Anthony Johnson,Ramesh C. Budhani###
(1862961, 1862965)
 Measurements of frequency dependent ferromagnetic resonance (FMR) and spinpumping driven dc voltage (Vdc) are reported for amorphous films ofFe78Ga13B9 (FeGaB) alloy to address the phenomenon of self-inducedinverse spin Hall effect (ISHE) in plain films of metallic ferromagnets.
Featurization successful!
0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 8, 'nm', 2],[275.0, 54, 'n', 4],[425.0, 54, 'n', 7],[450.0, 90, '%', 8]

ISH
###Resonant Precession of Magnetization and Precession -- Induced DC voltages in FeGaB Thin Films|Prabesh Bajracharya,Vinay Sharma,Anthony Johnson,Ramesh C. Budhani###
(1862993, 1862995)
 Measurements of frequency dependent ferromagnetic resonance (FMR) and spinpumping driven dc voltage (Vdc) are reported for amorphous films ofFe78Ga13B9 (FeGaB) alloy to address the phenomenon of self-inducedinverse spin Hall effect (ISHE) in plain films of metallic ferromagnets.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[120.0, 8, 'nm', 2],[245.0, 54, 'n', 4],[395.0, 54, 'n', 7],[420.0, 90, '%', 8]

V
###Resonant Precession of Magnetization and Precession -- Induced DC voltages in FeGaB Thin Films|Prabesh Bajracharya,Vinay Sharma,Anthony Johnson,Ramesh C. Budhani###
(1863015, 1863015)
 TheVdc signal, which is antisymmetric on field reversal, comprises of symmetricand asymmetric Lorentzians centered around the resonance field.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 8, 'nm', 1],[225.0, 54, 'n', 3],[375.0, 54, 'n', 6],[400.0, 90, '%', 7]

V
###Resonant Precession of Magnetization and Precession -- Induced DC voltages in FeGaB Thin Films|Prabesh Bajracharya,Vinay Sharma,Anthony Johnson,Ramesh C. Budhani###
(1863093, 1863093)
 Dominant roleof thin film size effects is seen in setting the magnitude of staticmagnetization, Vdc and dynamics of magnetization precession in thinner films(leq 8 nm).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 8, 'nm', 0],[147.0, 54, 'n', 2],[297.0, 54, 'n', 5],[322.0, 90, '%', 6]

V
###Resonant Precession of Magnetization and Precession -- Induced DC voltages in FeGaB Thin Films|Prabesh Bajracharya,Vinay Sharma,Anthony Johnson,Ramesh C. Budhani###
(1863200, 1863200)
 However, theVdc signal also draws contributions from rectification effects of a approx0.4 % anisotropic magnetoresistance and a large (approx 54 nOmega.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[85.0, 8, 'nm', 2],[40.0, 54, 'n', 0],[190.0, 54, 'n', 3],[215.0, 90, '%', 4]

H
###Resonant Precession of Magnetization and Precession -- Induced DC voltages in FeGaB Thin Films|Prabesh Bajracharya,Vinay Sharma,Anthony Johnson,Ramesh C. Budhani###
(1863255, 1863255)
m)anomalous Hall resistivity (AHR) of these films which ride over the effect ofspin-orbit coupling driven spin-to-charge conversion near the film-substrateinterface.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[140.0, 8, 'nm', 3],[15.0, 54, 'n', 1],[135.0, 54, 'n', 2],[160.0, 90, '%', 3]

ISH
###Resonant Precession of Magnetization and Precession -- Induced DC voltages in FeGaB Thin Films|Prabesh Bajracharya,Vinay Sharma,Anthony Johnson,Ramesh C. Budhani###
(1863378, 1863380)
 Our estimation of theself-induced ISHE<missing VAR> for the sample with 54 nOmega.
Featurization terminated normally.
0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[263.0, 8, 'nm', 5],[138.0, 54, 'n', 3],[10.0, 54, 'n', 0],[35.0, 90, '%', 1]

H
###Resonant Precession of Magnetization and Precession -- Induced DC voltages in FeGaB Thin Films|Prabesh Bajracharya,Vinay Sharma,Anthony Johnson,Ramesh C. Budhani###
(1863396, 1863396)
m<missing VAR> AHR<missing VAR> shows that it maycontribute significantly (approx 90%) to the measured symmetric voltage.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[281.0, 8, 'nm', 6],[156.0, 54, 'n', 4],[6.0, 54, 'n', 1],[19.0, 90, '%', 0]

Ho/FeCoGd
###Magneto-transport and magnetic textures in Ho/FeCoGd/β-W multilayers|Ramesh C. Budhani,Vinay Sharma,Ezana Negusse,Jacob Casey,Arjun K. Pathak,Jerzy T. Sadowski,Brian Kirby###
(1863510, 1863514)
Magneto-transport and magnetic textures in Ho/FeCoGd/-W multilayers.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[120.0, 3, 'd', 2],[123.0, 4, 'f', 2],[312.0, 3, 'd', 4],[315.0, 4, 'f', 4],[409.0, 4, 'f', 6],[470.0, 200, 'K', 7],[586.0, 3, 'd', 9],[589.0, 4, 'f', 9],[650.0, 3, 'd', 10],[653.0, 4, 'f', 10]

W
###Magneto-transport and magnetic textures in Ho/FeCoGd/β-W multilayers|Ramesh C. Budhani,Vinay Sharma,Ezana Negusse,Jacob Casey,Arjun K. Pathak,Jerzy T. Sadowski,Brian Kirby###
(1863517, 1863517)
Magneto-transport and magnetic textures in Ho/FeCoGd/-W multilayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 3, 'd', 2],[120.0, 4, 'f', 2],[309.0, 3, 'd', 4],[312.0, 4, 'f', 4],[406.0, 4, 'f', 6],[467.0, 200, 'K', 7],[583.0, 3, 'd', 9],[586.0, 4, 'f', 9],[647.0, 3, 'd', 10],[650.0, 4, 'f', 10]

I
###Magneto-transport and magnetic textures in Ho/FeCoGd/β-W multilayers|Ramesh C. Budhani,Vinay Sharma,Ezana Negusse,Jacob Casey,Arjun K. Pathak,Jerzy T. Sadowski,Brian Kirby###
(1863539, 1863539)
 The enhancement of interfacial Dzyaloshinskii-Moriya Interaction (DMI) inmagnetic multilayers results in the stabilization of topological spin textureslike chiral domain walls and skyrmions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[95.0, 3, 'd', 1],[98.0, 4, 'f', 1],[287.0, 3, 'd', 3],[290.0, 4, 'f', 3],[384.0, 4, 'f', 5],[445.0, 200, 'K', 6],[561.0, 3, 'd', 8],[564.0, 4, 'f', 8],[625.0, 3, 'd', 9],[628.0, 4, 'f', 9]

F
###Magneto-transport and magnetic textures in Ho/FeCoGd/β-W multilayers|Ramesh C. Budhani,Vinay Sharma,Ezana Negusse,Jacob Casey,Arjun K. Pathak,Jerzy T. Sadowski,Brian Kirby###
(1863626, 1863626)
 Here we report on the evaluation ofinterface-driven magnetic interactions in a uniquely designed multilayer whereeach magnetic layer of two AFM<missing VAR> coupled sublattices of 3d and 4f moments issandwiched between the layers of beta-tungsten and holmium whose spin Hallangles are large but opposite in sign.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[8.0, 3, 'd', 0],[11.0, 4, 'f', 0],[200.0, 3, 'd', 2],[203.0, 4, 'f', 2],[297.0, 4, 'f', 4],[358.0, 200, 'K', 5],[474.0, 3, 'd', 7],[477.0, 4, 'f', 7],[538.0, 3, 'd', 8],[541.0, 4, 'f', 8]

H
###Magneto-transport and magnetic textures in Ho/FeCoGd/β-W multilayers|Ramesh C. Budhani,Vinay Sharma,Ezana Negusse,Jacob Casey,Arjun K. Pathak,Jerzy T. Sadowski,Brian Kirby###
(1863770, 1863770)
 Measurements of the Hall resistivity(rhoxy(T<missing VAR>, H)) together with static magnetization (M(T,H)) over a broadrange of temperature (T) and magnetic field (H) indicate impending compensationbetween 3d and 4f sublattices at T<missing VAR>>350 K.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[136.0, 3, 'd', 2],[133.0, 4, 'f', 2],[56.0, 3, 'd', 0],[59.0, 4, 'f', 0],[153.0, 4, 'f', 2],[214.0, 200, 'K', 3],[330.0, 3, 'd', 5],[333.0, 4, 'f', 5],[394.0, 3, 'd', 6],[397.0, 4, 'f', 6]

H
###Magneto-transport and magnetic textures in Ho/FeCoGd/β-W multilayers|Ramesh C. Budhani,Vinay Sharma,Ezana Negusse,Jacob Casey,Arjun K. Pathak,Jerzy T. Sadowski,Brian Kirby###
(1863787, 1863787)
 Measurements of the Hall resistivity(rhoxy(T<missing VAR>, H)) together with static magnetization (M(T,H)) over a broadrange of temperature (T) and magnetic field (H) indicate impending compensationbetween 3d and 4f sublattices at T<missing VAR>>350 K.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 3, 'd', 2],[150.0, 4, 'f', 2],[39.0, 3, 'd', 0],[42.0, 4, 'f', 0],[136.0, 4, 'f', 2],[197.0, 200, 'K', 3],[313.0, 3, 'd', 5],[316.0, 4, 'f', 5],[377.0, 3, 'd', 6],[380.0, 4, 'f', 6]

(H)
###Magneto-transport and magnetic textures in Ho/FeCoGd/β-W multilayers|Ramesh C. Budhani,Vinay Sharma,Ezana Negusse,Jacob Casey,Arjun K. Pathak,Jerzy T. Sadowski,Brian Kirby###
(1863814, 1863816)
 Measurements of the Hall resistivity(rhoxy(T<missing VAR>, H)) together with static magnetization (M(T,H)) over a broadrange of temperature (T) and magnetic field (H) indicate impending compensationbetween 3d and 4f sublattices at T<missing VAR>>350 K.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[180.0, 3, 'd', 2],[177.0, 4, 'f', 2],[10.0, 3, 'd', 0],[13.0, 4, 'f', 0],[107.0, 4, 'f', 2],[168.0, 200, 'K', 3],[284.0, 3, 'd', 5],[287.0, 4, 'f', 5],[348.0, 3, 'd', 6],[351.0, 4, 'f', 6]

K
###Magneto-transport and magnetic textures in Ho/FeCoGd/β-W multilayers|Ramesh C. Budhani,Vinay Sharma,Ezana Negusse,Jacob Casey,Arjun K. Pathak,Jerzy T. Sadowski,Brian Kirby###
(1863839, 1863839)
 Measurements of the Hall resistivity(rhoxy(T<missing VAR>, H)) together with static magnetization (M(T,H)) over a broadrange of temperature (T) and magnetic field (H) indicate impending compensationbetween 3d and 4f sublattices at T<missing VAR>>350 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, 3, 'd', 2],[202.0, 4, 'f', 2],[13.0, 3, 'd', 0],[10.0, 4, 'f', 0],[84.0, 4, 'f', 2],[145.0, 200, 'K', 3],[261.0, 3, 'd', 5],[264.0, 4, 'f', 5],[325.0, 3, 'd', 6],[328.0, 4, 'f', 6]

H
###Magneto-transport and magnetic textures in Ho/FeCoGd/β-W multilayers|Ramesh C. Budhani,Vinay Sharma,Ezana Negusse,Jacob Casey,Arjun K. Pathak,Jerzy T. Sadowski,Brian Kirby###
(1863907, 1863907)
m) and negative anomalousrhoxy(T<missing VAR>,H) which results from a parallel alignment of 4f moments with theexternal magnetic field.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[273.0, 3, 'd', 4],[270.0, 4, 'f', 4],[81.0, 3, 'd', 2],[78.0, 4, 'f', 2],[16.0, 4, 'f', 0],[77.0, 200, 'K', 1],[193.0, 3, 'd', 3],[196.0, 4, 'f', 3],[257.0, 3, 'd', 4],[260.0, 4, 'f', 4]

No
###Magneto-transport and magnetic textures in Ho/FeCoGd/β-W multilayers|Ramesh C. Budhani,Vinay Sharma,Ezana Negusse,Jacob Casey,Arjun K. Pathak,Jerzy T. Sadowski,Brian Kirby###
(1863939, 1863939)
 No distinct scaling is seen between rhoxy(T<missing VAR>,H),rhoxx(T<missing VAR>, H) and M(T,H) at temperatures above 200K where the magnetizationdevelops out-of-plane anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0
[305.0, 3, 'd', 5],[302.0, 4, 'f', 5],[113.0, 3, 'd', 3],[110.0, 4, 'f', 3],[16.0, 4, 'f', 1],[45.0, 200, 'K', 0],[161.0, 3, 'd', 2],[164.0, 4, 'f', 2],[225.0, 3, 'd', 3],[228.0, 4, 'f', 3]

H
###Magneto-transport and magnetic textures in Ho/FeCoGd/β-W multilayers|Ramesh C. Budhani,Vinay Sharma,Ezana Negusse,Jacob Casey,Arjun K. Pathak,Jerzy T. Sadowski,Brian Kirby###
(1863956, 1863956)
 No distinct scaling is seen between rhoxy(T<missing VAR>,H),rhoxx(T<missing VAR>, H) and M(T,H) at temperatures above 200K where the magnetizationdevelops out-of-plane anisotropy.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[322.0, 3, 'd', 5],[319.0, 4, 'f', 5],[130.0, 3, 'd', 3],[127.0, 4, 'f', 3],[33.0, 4, 'f', 1],[28.0, 200, 'K', 0],[144.0, 3, 'd', 2],[147.0, 4, 'f', 2],[208.0, 3, 'd', 3],[211.0, 4, 'f', 3]

H
###Magneto-transport and magnetic textures in Ho/FeCoGd/β-W multilayers|Ramesh C. Budhani,Vinay Sharma,Ezana Negusse,Jacob Casey,Arjun K. Pathak,Jerzy T. Sadowski,Brian Kirby###
(1863967, 1863967)
 No distinct scaling is seen between rhoxy(T<missing VAR>,H),rhoxx(T<missing VAR>, H) and M(T,H) at temperatures above 200K where the magnetizationdevelops out-of-plane anisotropy.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[333.0, 3, 'd', 5],[330.0, 4, 'f', 5],[141.0, 3, 'd', 3],[138.0, 4, 'f', 3],[44.0, 4, 'f', 1],[17.0, 200, 'K', 0],[133.0, 3, 'd', 2],[136.0, 4, 'f', 2],[197.0, 3, 'd', 3],[200.0, 4, 'f', 3]

H
###Magneto-transport and magnetic textures in Ho/FeCoGd/β-W multilayers|Ramesh C. Budhani,Vinay Sharma,Ezana Negusse,Jacob Casey,Arjun K. Pathak,Jerzy T. Sadowski,Brian Kirby###
(1863976, 1863976)
 No distinct scaling is seen between rhoxy(T<missing VAR>,H),rhoxx(T<missing VAR>, H) and M(T,H) at temperatures above 200K where the magnetizationdevelops out-of-plane anisotropy.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[342.0, 3, 'd', 5],[339.0, 4, 'f', 5],[150.0, 3, 'd', 3],[147.0, 4, 'f', 3],[53.0, 4, 'f', 1],[8.0, 200, 'K', 0],[124.0, 3, 'd', 2],[127.0, 4, 'f', 2],[188.0, 3, 'd', 3],[191.0, 4, 'f', 3]

K
###Magneto-transport and magnetic textures in Ho/FeCoGd/β-W multilayers|Ramesh C. Budhani,Vinay Sharma,Ezana Negusse,Jacob Casey,Arjun K. Pathak,Jerzy T. Sadowski,Brian Kirby###
(1864020, 1864020)
 The field scans of rhoxy at T<missing VAR>>200K show adistinct cusp in the vicinity of magnetic saturation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[386.0, 3, 'd', 6],[383.0, 4, 'f', 6],[194.0, 3, 'd', 4],[191.0, 4, 'f', 4],[97.0, 4, 'f', 2],[36.0, 200, 'K', 1],[80.0, 3, 'd', 1],[83.0, 4, 'f', 1],[144.0, 3, 'd', 2],[147.0, 4, 'f', 2]

I
###Magneto-transport and magnetic textures in Ho/FeCoGd/β-W multilayers|Ramesh C. Budhani,Vinay Sharma,Ezana Negusse,Jacob Casey,Arjun K. Pathak,Jerzy T. Sadowski,Brian Kirby###
(1864138, 1864138)
 It is suggested that this apparent topological effectresults from an interfacial DMI and dominates rhoxy(T<missing VAR>,H) in the temperatureregime where the 3d and 4f lattices are nearly compensated.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[504.0, 3, 'd', 8],[501.0, 4, 'f', 8],[312.0, 3, 'd', 6],[309.0, 4, 'f', 6],[215.0, 4, 'f', 4],[154.0, 200, 'K', 3],[38.0, 3, 'd', 1],[35.0, 4, 'f', 1],[26.0, 3, 'd', 0],[29.0, 4, 'f', 0]

H
###Magneto-transport and magnetic textures in Ho/FeCoGd/β-W multilayers|Ramesh C. Budhani,Vinay Sharma,Ezana Negusse,Jacob Casey,Arjun K. Pathak,Jerzy T. Sadowski,Brian Kirby###
(1864149, 1864149)
 It is suggested that this apparent topological effectresults from an interfacial DMI and dominates rhoxy(T<missing VAR>,H) in the temperatureregime where the 3d and 4f lattices are nearly compensated.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[515.0, 3, 'd', 8],[512.0, 4, 'f', 8],[323.0, 3, 'd', 6],[320.0, 4, 'f', 6],[226.0, 4, 'f', 4],[165.0, 200, 'K', 3],[49.0, 3, 'd', 1],[46.0, 4, 'f', 1],[15.0, 3, 'd', 0],[18.0, 4, 'f', 0]

KCo2As2
###KCo$_2$As$_2$: A New Portal for the Physics of High-Purity Metals|Abhishek Pandey,Y. Liu,Saroj L. Samal,Yevhen Kushnirenko,A. Kaminski,D. J. Singh,D. C. Johnston###
(1864186, 1864190)
KCo2As2 A New Portal for the Physics of High-Purity Metals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[119.0, 2, 'to', 3],[163.0, 30, 'K', 4],[179.0, 300, 'K', 4],[357.0, 40, '%', 7],[564.0, 36, '%', 10]

KCo2As2
###KCo$_2$As$_2$: A New Portal for the Physics of High-Purity Metals|Abhishek Pandey,Y. Liu,Saroj L. Samal,Yevhen Kushnirenko,A. Kaminski,D. J. Singh,D. C. Johnston###
(1864223, 1864227)
 High-quality single crystals of KCo2As2 with the body-centeredtetragonal ThCr2Si2 structure were grown using KAs self flux.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 2, 'to', 2],[126.0, 30, 'K', 3],[142.0, 300, 'K', 3],[320.0, 40, '%', 6],[527.0, 36, '%', 9]

ThCr2Si2
###KCo$_2$As$_2$: A New Portal for the Physics of High-Purity Metals|Abhishek Pandey,Y. Liu,Saroj L. Samal,Yevhen Kushnirenko,A. Kaminski,D. J. Singh,D. C. Johnston###
(1864240, 1864244)
 High-quality single crystals of KCo2As2 with the body-centeredtetragonal ThCr2Si2 structure were grown using KAs self flux.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0
[65.0, 2, 'to', 2],[109.0, 30, 'K', 3],[125.0, 300, 'K', 3],[303.0, 40, '%', 6],[510.0, 36, '%', 9]

KAs
###KCo$_2$As$_2$: A New Portal for the Physics of High-Purity Metals|Abhishek Pandey,Y. Liu,Saroj L. Samal,Yevhen Kushnirenko,A. Kaminski,D. J. Singh,D. C. Johnston###
(1864254, 1864255)
 High-quality single crystals of KCo2As2 with the body-centeredtetragonal ThCr2Si2 structure were grown using KAs self flux.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 2, 'to', 2],[98.0, 30, 'K', 3],[114.0, 300, 'K', 3],[292.0, 40, '%', 6],[499.0, 36, '%', 9]

No
###KCo$_2$As$_2$: A New Portal for the Physics of High-Purity Metals|Abhishek Pandey,Y. Liu,Saroj L. Samal,Yevhen Kushnirenko,A. Kaminski,D. J. Singh,D. C. Johnston###
(1864283, 1864283)
 No clearevidence for any phase transitions was found in the temperature range 2 to 300K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0
[26.0, 2, 'to', 0],[70.0, 30, 'K', 1],[86.0, 300, 'K', 1],[264.0, 40, '%', 4],[471.0, 36, '%', 7]

K
###KCo$_2$As$_2$: A New Portal for the Physics of High-Purity Metals|Abhishek Pandey,Y. Liu,Saroj L. Samal,Yevhen Kushnirenko,A. Kaminski,D. J. Singh,D. C. Johnston###
(1864314, 1864314)
 No clearevidence for any phase transitions was found in the temperature range 2 to 300K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 2, 'to', 0],[39.0, 30, 'K', 1],[55.0, 300, 'K', 1],[233.0, 40, '%', 4],[440.0, 36, '%', 7]

PdCoO2
###KCo$_2$As$_2$: A New Portal for the Physics of High-Purity Metals|Abhishek Pandey,Y. Liu,Saroj L. Samal,Yevhen Kushnirenko,A. Kaminski,D. J. Singh,D. C. Johnston###
(1864452, 1864455)
 Thispositive curvature has been previously observed in the in-plane resistivity ofhigh-conductivity layered delafossites such as PdCoO2 and PtCoO2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 2, 'to', 2],[99.0, 30, 'K', 1],[83.0, 300, 'K', 1],[92.0, 40, '%', 2],[299.0, 36, '%', 5]

PtCoO2
###KCo$_2$As$_2$: A New Portal for the Physics of High-Purity Metals|Abhishek Pandey,Y. Liu,Saroj L. Samal,Yevhen Kushnirenko,A. Kaminski,D. J. Singh,D. C. Johnston###
(1864459, 1864462)
 Thispositive curvature has been previously observed in the in-plane resistivity ofhigh-conductivity layered delafossites such as PdCoO2 and PtCoO2.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 2, 'to', 2],[106.0, 30, 'K', 1],[90.0, 300, 'K', 1],[85.0, 40, '%', 2],[292.0, 36, '%', 5]

KCo2As2
###KCo$_2$As$_2$: A New Portal for the Physics of High-Purity Metals|Abhishek Pandey,Y. Liu,Saroj L. Samal,Yevhen Kushnirenko,A. Kaminski,D. J. Singh,D. C. Johnston###
(1864488, 1864492)
 Thein-plane rho(T<missing VAR>to0)  0.36muOmega cm of KCo2As2 is exceptionallysmall for this class of compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 2, 'to', 3],[135.0, 30, 'K', 2],[119.0, 300, 'K', 2],[55.0, 40, '%', 1],[262.0, 36, '%', 4]

K
###KCo$_2$As$_2$: A New Portal for the Physics of High-Purity Metals|Abhishek Pandey,Y. Liu,Saroj L. Samal,Yevhen Kushnirenko,A. Kaminski,D. J. Singh,D. C. Johnston###
(1864554, 1864554)
 The material also exhibits a nearly linearmagnetoresistance at low T<missing VAR> which attains a value of about 40% at T<missing VAR>2K andmagnetic field H 80 k<missing VAR>Oe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[245.0, 2, 'to', 4],[201.0, 30, 'K', 3],[185.0, 300, 'K', 3],[7.0, 40, '%', 0],[200.0, 36, '%', 3]

H
###KCo$_2$As$_2$: A New Portal for the Physics of High-Purity Metals|Abhishek Pandey,Y. Liu,Saroj L. Samal,Yevhen Kushnirenko,A. Kaminski,D. J. Singh,D. C. Johnston###
(1864563, 1864563)
 The material also exhibits a nearly linearmagnetoresistance at low T<missing VAR> which attains a value of about 40% at T<missing VAR>2K andmagnetic field H 80 k<missing VAR>Oe.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[254.0, 2, 'to', 4],[210.0, 30, 'K', 3],[194.0, 300, 'K', 3],[16.0, 40, '%', 0],[191.0, 36, '%', 3]

KCo2As2
###KCo$_2$As$_2$: A New Portal for the Physics of High-Purity Metals|Abhishek Pandey,Y. Liu,Saroj L. Samal,Yevhen Kushnirenko,A. Kaminski,D. J. Singh,D. C. Johnston###
(1864581, 1864585)
 The magnetic susceptibility chi of KCo2As2is isotropic and about an order of magnitude smaller than the values for therelated compounds SrCo2As2 and BaCo2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[272.0, 2, 'to', 5],[228.0, 30, 'K', 4],[212.0, 300, 'K', 4],[34.0, 40, '%', 1],[169.0, 36, '%', 2]

SrCo2As2
###KCo$_2$As$_2$: A New Portal for the Physics of High-Purity Metals|Abhishek Pandey,Y. Liu,Saroj L. Samal,Yevhen Kushnirenko,A. Kaminski,D. J. Singh,D. C. Johnston###
(1864621, 1864625)
 The magnetic susceptibility chi of KCo2As2is isotropic and about an order of magnitude smaller than the values for therelated compounds SrCo2As2 and BaCo2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0.4,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[312.0, 2, 'to', 5],[268.0, 30, 'K', 4],[252.0, 300, 'K', 4],[74.0, 40, '%', 1],[129.0, 36, '%', 2]

BaCo2As2
###KCo$_2$As$_2$: A New Portal for the Physics of High-Purity Metals|Abhishek Pandey,Y. Liu,Saroj L. Samal,Yevhen Kushnirenko,A. Kaminski,D. J. Singh,D. C. Johnston###
(1864629, 1864633)
 The magnetic susceptibility chi of KCo2As2is isotropic and about an order of magnitude smaller than the values for therelated compounds SrCo2As2 and BaCo2As2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[320.0, 2, 'to', 5],[276.0, 30, 'K', 4],[260.0, 300, 'K', 4],[82.0, 40, '%', 1],[121.0, 36, '%', 2]

K
###KCo$_2$As$_2$: A New Portal for the Physics of High-Purity Metals|Abhishek Pandey,Y. Liu,Saroj L. Samal,Yevhen Kushnirenko,A. Kaminski,D. J. Singh,D. C. Johnston###
(1864647, 1864647)
 The chi increases above100 K which is found from our first-principles calculations to arise from asharp peak in the electronic density of states just above the Fermi energyE<missing VAR>rm F.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[338.0, 2, 'to', 6],[294.0, 30, 'K', 5],[278.0, 300, 'K', 5],[100.0, 40, '%', 2],[107.0, 36, '%', 1]

F
###KCo$_2$As$_2$: A New Portal for the Physics of High-Purity Metals|Abhishek Pandey,Y. Liu,Saroj L. Samal,Yevhen Kushnirenko,A. Kaminski,D. J. Singh,D. C. Johnston###
(1864704, 1864704)
 The chi increases above100 K which is found from our first-principles calculations to arise from asharp peak in the electronic density of states just above the Fermi energyE<missing VAR>rm F.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[395.0, 2, 'to', 6],[351.0, 30, 'K', 5],[335.0, 300, 'K', 5],[157.0, 40, '%', 2],[50.0, 36, '%', 1]

C
###KCo$_2$As$_2$: A New Portal for the Physics of High-Purity Metals|Abhishek Pandey,Y. Liu,Saroj L. Samal,Yevhen Kushnirenko,A. Kaminski,D. J. Singh,D. C. Johnston###
(1864711, 1864711)
 Heat capacity Crm p(T) data at low T<missing VAR> yield an electronicdensity of states N(E<missing VAR>rm F) that is about 36% larger than predicted by thefirst-principles theory.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[402.0, 2, 'to', 7],[358.0, 30, 'K', 6],[342.0, 300, 'K', 6],[164.0, 40, '%', 3],[43.0, 36, '%', 0]

N
###KCo$_2$As$_2$: A New Portal for the Physics of High-Purity Metals|Abhishek Pandey,Y. Liu,Saroj L. Samal,Yevhen Kushnirenko,A. Kaminski,D. J. Singh,D. C. Johnston###
(1864740, 1864740)
 Heat capacity Crm p(T) data at low T<missing VAR> yield an electronicdensity of states N(E<missing VAR>rm F) that is about 36% larger than predicted by thefirst-principles theory.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[431.0, 2, 'to', 7],[387.0, 30, 'K', 6],[371.0, 300, 'K', 6],[193.0, 40, '%', 3],[14.0, 36, '%', 0]

F
###KCo$_2$As$_2$: A New Portal for the Physics of High-Purity Metals|Abhishek Pandey,Y. Liu,Saroj L. Samal,Yevhen Kushnirenko,A. Kaminski,D. J. Singh,D. C. Johnston###
(1864745, 1864745)
 Heat capacity Crm p(T) data at low T<missing VAR> yield an electronicdensity of states N(E<missing VAR>rm F) that is about 36% larger than predicted by thefirst-principles theory.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[436.0, 2, 'to', 7],[392.0, 30, 'K', 6],[376.0, 300, 'K', 6],[198.0, 40, '%', 3],[9.0, 36, '%', 0]

C
###KCo$_2$As$_2$: A New Portal for the Physics of High-Purity Metals|Abhishek Pandey,Y. Liu,Saroj L. Samal,Yevhen Kushnirenko,A. Kaminski,D. J. Singh,D. C. Johnston###
(1864777, 1864777)
 The Crm p(T) data near room temperature suggestthe presence of excited optic vibration modes which may also be the source ofthe positive curvature in rho(T).
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[468.0, 2, 'to', 8],[424.0, 30, 'K', 7],[408.0, 300, 'K', 7],[230.0, 40, '%', 4],[23.0, 36, '%', 1]

KCo2As2
###KCo$_2$As$_2$: A New Portal for the Physics of High-Purity Metals|Abhishek Pandey,Y. Liu,Saroj L. Samal,Yevhen Kushnirenko,A. Kaminski,D. J. Singh,D. C. Johnston###
(1864847, 1864851)
 Our results show that KCo2As2provides a new avenue for investigating the physics of high-purity metals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[538.0, 2, 'to', 9],[494.0, 30, 'K', 8],[478.0, 300, 'K', 8],[300.0, 40, '%', 5],[93.0, 36, '%', 2]

H
###$Ab$ $Initio$ Study of Magnetic Tunnel Junctions Based on Half-Metallic and Spin-Gapless Semiconducting Heusler Compounds: Reconfigurable Diode and Inverse Tunnel-Magnetoresistance Effect|T. Aull,E. Şaşıoğlu,N. F. Hinsche,I. Mertig###
(1865016, 1865016)
 Half-metallic magnets(HM<missing VAR>Ms) have been suggested as ideal electrode materials for MTJs to achieve anextremely large tunnel-magnetoresistance (TMR) effect.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###$Ab$ $Initio$ Study of Magnetic Tunnel Junctions Based on Half-Metallic and Spin-Gapless Semiconducting Heusler Compounds: Reconfigurable Diode and Inverse Tunnel-Magnetoresistance Effect|T. Aull,E. Şaşıoğlu,N. F. Hinsche,I. Mertig###
(1865087, 1865087)
 Despite their high TMRratios, MTJs based on HM<missing VAR>Ms do not exhibit current rectification, i.e.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###$Ab$ $Initio$ Study of Magnetic Tunnel Junctions Based on Half-Metallic and Spin-Gapless Semiconducting Heusler Compounds: Reconfigurable Diode and Inverse Tunnel-Magnetoresistance Effect|T. Aull,E. Şaşıoğlu,N. F. Hinsche,I. Mertig###
(1865138, 1865138)
, a diodeeffect, which was achieved in a magnetic tunnel junction concept based on HM<missing VAR>Msand type-II spin-gapless semiconductors (SG<missing VAR>Ss).
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###$Ab$ $Initio$ Study of Magnetic Tunnel Junctions Based on Half-Metallic and Spin-Gapless Semiconducting Heusler Compounds: Reconfigurable Diode and Inverse Tunnel-Magnetoresistance Effect|T. Aull,E. Şaşıoğlu,N. F. Hinsche,I. Mertig###
(1865147, 1865148)
, a diodeeffect, which was achieved in a magnetic tunnel junction concept based on HM<missing VAR>Msand type-II spin-gapless semiconductors (SG<missing VAR>Ss).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###$Ab$ $Initio$ Study of Magnetic Tunnel Junctions Based on Half-Metallic and Spin-Gapless Semiconducting Heusler Compounds: Reconfigurable Diode and Inverse Tunnel-Magnetoresistance Effect|T. Aull,E. Şaşıoğlu,N. F. Hinsche,I. Mertig###
(1865157, 1865157)
, a diodeeffect, which was achieved in a magnetic tunnel junction concept based on HM<missing VAR>Msand type-II spin-gapless semiconductors (SG<missing VAR>Ss).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###$Ab$ $Initio$ Study of Magnetic Tunnel Junctions Based on Half-Metallic and Spin-Gapless Semiconducting Heusler Compounds: Reconfigurable Diode and Inverse Tunnel-Magnetoresistance Effect|T. Aull,E. Şaşıoğlu,N. F. Hinsche,I. Mertig###
(1865187, 1865187)
 In thepresent work, we investigate from first-principles MTJs based on type-II SG<missing VAR>Sand HMM quaternary Heusler compounds FeVTaAl, FeVTiSi, MnVTiAl, and CoVTiSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

II
###$Ab$ $Initio$ Study of Magnetic Tunnel Junctions Based on Half-Metallic and Spin-Gapless Semiconducting Heusler Compounds: Reconfigurable Diode and Inverse Tunnel-Magnetoresistance Effect|T. Aull,E. Şaşıoğlu,N. F. Hinsche,I. Mertig###
(1865217, 1865218)
 In thepresent work, we investigate from first-principles MTJs based on type-II SG<missing VAR>Sand HMM quaternary Heusler compounds FeVTaAl, FeVTiSi, MnVTiAl, and CoVTiSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###$Ab$ $Initio$ Study of Magnetic Tunnel Junctions Based on Half-Metallic and Spin-Gapless Semiconducting Heusler Compounds: Reconfigurable Diode and Inverse Tunnel-Magnetoresistance Effect|T. Aull,E. Şaşıoğlu,N. F. Hinsche,I. Mertig###
(1865220, 1865220)
 In thepresent work, we investigate from first-principles MTJs based on type-II SG<missing VAR>Sand HMM quaternary Heusler compounds FeVTaAl, FeVTiSi, MnVTiAl, and CoVTiSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###$Ab$ $Initio$ Study of Magnetic Tunnel Junctions Based on Half-Metallic and Spin-Gapless Semiconducting Heusler Compounds: Reconfigurable Diode and Inverse Tunnel-Magnetoresistance Effect|T. Aull,E. Şaşıoğlu,N. F. Hinsche,I. Mertig###
(1865222, 1865222)
 In thepresent work, we investigate from first-principles MTJs based on type-II SG<missing VAR>Sand HMM quaternary Heusler compounds FeVTaAl, FeVTiSi, MnVTiAl, and CoVTiSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###$Ab$ $Initio$ Study of Magnetic Tunnel Junctions Based on Half-Metallic and Spin-Gapless Semiconducting Heusler Compounds: Reconfigurable Diode and Inverse Tunnel-Magnetoresistance Effect|T. Aull,E. Şaşıoğlu,N. F. Hinsche,I. Mertig###
(1865227, 1865227)
 In thepresent work, we investigate from first-principles MTJs based on type-II SG<missing VAR>Sand HMM quaternary Heusler compounds FeVTaAl, FeVTiSi, MnVTiAl, and CoVTiSb.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeVTaAl
###$Ab$ $Initio$ Study of Magnetic Tunnel Junctions Based on Half-Metallic and Spin-Gapless Semiconducting Heusler Compounds: Reconfigurable Diode and Inverse Tunnel-Magnetoresistance Effect|T. Aull,E. Şaşıoğlu,N. F. Hinsche,I. Mertig###
(1865237, 1865240)
 In thepresent work, we investigate from first-principles MTJs based on type-II SG<missing VAR>Sand HMM quaternary Heusler compounds FeVTaAl, FeVTiSi, MnVTiAl, and CoVTiSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0.25,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

FeVTiSi
###$Ab$ $Initio$ Study of Magnetic Tunnel Junctions Based on Half-Metallic and Spin-Gapless Semiconducting Heusler Compounds: Reconfigurable Diode and Inverse Tunnel-Magnetoresistance Effect|T. Aull,E. Şaşıoğlu,N. F. Hinsche,I. Mertig###
(1865243, 1865246)
 In thepresent work, we investigate from first-principles MTJs based on type-II SG<missing VAR>Sand HMM quaternary Heusler compounds FeVTaAl, FeVTiSi, MnVTiAl, and CoVTiSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0.25,0.25,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

MnVTiAl
###$Ab$ $Initio$ Study of Magnetic Tunnel Junctions Based on Half-Metallic and Spin-Gapless Semiconducting Heusler Compounds: Reconfigurable Diode and Inverse Tunnel-Magnetoresistance Effect|T. Aull,E. Şaşıoğlu,N. F. Hinsche,I. Mertig###
(1865249, 1865252)
 In thepresent work, we investigate from first-principles MTJs based on type-II SG<missing VAR>Sand HMM quaternary Heusler compounds FeVTaAl, FeVTiSi, MnVTiAl, and CoVTiSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0.25,0.25,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

CoVTiSb
###$Ab$ $Initio$ Study of Magnetic Tunnel Junctions Based on Half-Metallic and Spin-Gapless Semiconducting Heusler Compounds: Reconfigurable Diode and Inverse Tunnel-Magnetoresistance Effect|T. Aull,E. Şaşıoğlu,N. F. Hinsche,I. Mertig###
(1865257, 1865260)
 In thepresent work, we investigate from first-principles MTJs based on type-II SG<missing VAR>Sand HMM quaternary Heusler compounds FeVTaAl, FeVTiSi, MnVTiAl, and CoVTiSb.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0.25,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

H
###$Ab$ $Initio$ Study of Magnetic Tunnel Junctions Based on Half-Metallic and Spin-Gapless Semiconducting Heusler Compounds: Reconfigurable Diode and Inverse Tunnel-Magnetoresistance Effect|T. Aull,E. Şaşıoğlu,N. F. Hinsche,I. Mertig###
(1865392, 1865392)
 We show that,in contrast to conventional semiconductor diodes, the rectification biasvoltage window (or breakdown voltage) of the MTJs is limited by the spin gap ofthe HMM and SG<missing VAR>S Heusler compounds.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###$Ab$ $Initio$ Study of Magnetic Tunnel Junctions Based on Half-Metallic and Spin-Gapless Semiconducting Heusler Compounds: Reconfigurable Diode and Inverse Tunnel-Magnetoresistance Effect|T. Aull,E. Şaşıoğlu,N. F. Hinsche,I. Mertig###
(1865398, 1865398)
 We show that,in contrast to conventional semiconductor diodes, the rectification biasvoltage window (or breakdown voltage) of the MTJs is limited by the spin gap ofthe HMM and SG<missing VAR>S Heusler compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

S
###$Ab$ $Initio$ Study of Magnetic Tunnel Junctions Based on Half-Metallic and Spin-Gapless Semiconducting Heusler Compounds: Reconfigurable Diode and Inverse Tunnel-Magnetoresistance Effect|T. Aull,E. Şaşıoğlu,N. F. Hinsche,I. Mertig###
(1865400, 1865400)
 We show that,in contrast to conventional semiconductor diodes, the rectification biasvoltage window (or breakdown voltage) of the MTJs is limited by the spin gap ofthe HMM and SG<missing VAR>S Heusler compounds.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ho0.5Dy0.5FeO3
###Probing magnetic anisotropy and spin-reorientation transition in 3D antiferromagnet, Ho$_{0.5}$Dy$_{0.5}$FeO$_{3}\vert$Pt using spin Hall magnetoresistance|Aditya A. Wagh,Priyanka Garg,Arijit Haldar,Kingshuk Mallick,Tirthankar Chakraborty,Suja Elizabeth,P. S. Anil Kumar###
(1865655, 1865661)
Probing magnetic anisotropy and spin-reorientation transition in 3D antiferromagnet, Ho0.5Dy0.5FeO3vertPt using spin Hall magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.1,0.1,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[5.0, 3, 'D', 0],[37.0, 3, 'D', 1],[190.0, 11, 'to', 2],[191.0, 300, 'K', 2],[462.0, 360, 'deg', 6],[478.0, 2.4, 'kOe', 7],[501.0, 150, 'K', 7],[523.0, 52, 'K', 7],[563.0, 25, 'K', 8]

Pt
###Probing magnetic anisotropy and spin-reorientation transition in 3D antiferromagnet, Ho$_{0.5}$Dy$_{0.5}$FeO$_{3}\vert$Pt using spin Hall magnetoresistance|Aditya A. Wagh,Priyanka Garg,Arijit Haldar,Kingshuk Mallick,Tirthankar Chakraborty,Suja Elizabeth,P. S. Anil Kumar###
(1865663, 1865663)
Probing magnetic anisotropy and spin-reorientation transition in 3D antiferromagnet, Ho0.5Dy0.5FeO3vertPt using spin Hall magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 3, 'D', 0],[35.0, 3, 'D', 1],[188.0, 11, 'to', 2],[189.0, 300, 'K', 2],[460.0, 360, 'deg', 6],[476.0, 2.4, 'kOe', 7],[499.0, 150, 'K', 7],[521.0, 52, 'K', 7],[561.0, 25, 'K', 8]

O3
###Probing magnetic anisotropy and spin-reorientation transition in 3D antiferromagnet, Ho$_{0.5}$Dy$_{0.5}$FeO$_{3}\vert$Pt using spin Hall magnetoresistance|Aditya A. Wagh,Priyanka Garg,Arijit Haldar,Kingshuk Mallick,Tirthankar Chakraborty,Suja Elizabeth,P. S. Anil Kumar###
(1865680, 1865681)
 Orthoferrites (REFeO3) containing rare-earth (RE) elements are 3Dantiferromagnets (AFM) that exhibit characteristic weak ferromagnetismoriginating due to slight canting of the spin moments and display a richvariety of spin reorientation transitions in the magnetic field(H)-temperature (T) parameter space.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 3, 'D', 1],[17.0, 3, 'D', 0],[170.0, 11, 'to', 1],[171.0, 300, 'K', 1],[442.0, 360, 'deg', 5],[458.0, 2.4, 'kOe', 6],[481.0, 150, 'K', 6],[503.0, 52, 'K', 6],[543.0, 25, 'K', 7]

F
###Probing magnetic anisotropy and spin-reorientation transition in 3D antiferromagnet, Ho$_{0.5}$Dy$_{0.5}$FeO$_{3}\vert$Pt using spin Hall magnetoresistance|Aditya A. Wagh,Priyanka Garg,Arijit Haldar,Kingshuk Mallick,Tirthankar Chakraborty,Suja Elizabeth,P. S. Anil Kumar###
(1865705, 1865705)
 Orthoferrites (REFeO3) containing rare-earth (RE) elements are 3Dantiferromagnets (AFM) that exhibit characteristic weak ferromagnetismoriginating due to slight canting of the spin moments and display a richvariety of spin reorientation transitions in the magnetic field(H)-temperature (T) parameter space.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 3, 'D', 1],[7.0, 3, 'D', 0],[146.0, 11, 'to', 1],[147.0, 300, 'K', 1],[418.0, 360, 'deg', 5],[434.0, 2.4, 'kOe', 6],[457.0, 150, 'K', 6],[479.0, 52, 'K', 6],[519.0, 25, 'K', 7]

(H)
###Probing magnetic anisotropy and spin-reorientation transition in 3D antiferromagnet, Ho$_{0.5}$Dy$_{0.5}$FeO$_{3}\vert$Pt using spin Hall magnetoresistance|Aditya A. Wagh,Priyanka Garg,Arijit Haldar,Kingshuk Mallick,Tirthankar Chakraborty,Suja Elizabeth,P. S. Anil Kumar###
(1865766, 1865768)
 Orthoferrites (REFeO3) containing rare-earth (RE) elements are 3Dantiferromagnets (AFM) that exhibit characteristic weak ferromagnetismoriginating due to slight canting of the spin moments and display a richvariety of spin reorientation transitions in the magnetic field(H)-temperature (T) parameter space.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 3, 'D', 1],[68.0, 3, 'D', 0],[83.0, 11, 'to', 1],[84.0, 300, 'K', 1],[355.0, 360, 'deg', 5],[371.0, 2.4, 'kOe', 6],[394.0, 150, 'K', 6],[416.0, 52, 'K', 6],[456.0, 25, 'K', 7]

S
###Probing magnetic anisotropy and spin-reorientation transition in 3D antiferromagnet, Ho$_{0.5}$Dy$_{0.5}$FeO$_{3}\vert$Pt using spin Hall magnetoresistance|Aditya A. Wagh,Priyanka Garg,Arijit Haldar,Kingshuk Mallick,Tirthankar Chakraborty,Suja Elizabeth,P. S. Anil Kumar###
(1865793, 1865793)
 We present spin Hall magnetoresistance(SMR) studies on a b<missing VAR>-plate (ac-plane) of crystallineHo0.5Dy0.5FeO3Pt (HD<missing VAR>FOPt) hybrid at various T<missing VAR> in therange, 11 to 300 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 3, 'D', 2],[95.0, 3, 'D', 1],[58.0, 11, 'to', 0],[59.0, 300, 'K', 0],[330.0, 360, 'deg', 4],[346.0, 2.4, 'kOe', 5],[369.0, 150, 'K', 5],[391.0, 52, 'K', 5],[431.0, 25, 'K', 6]

Ho0.5Dy0.5FeO3Pt
###Probing magnetic anisotropy and spin-reorientation transition in 3D antiferromagnet, Ho$_{0.5}$Dy$_{0.5}$FeO$_{3}\vert$Pt using spin Hall magnetoresistance|Aditya A. Wagh,Priyanka Garg,Arijit Haldar,Kingshuk Mallick,Tirthankar Chakraborty,Suja Elizabeth,P. S. Anil Kumar###
(1865819, 1865826)
 We present spin Hall magnetoresistance(SMR) studies on a b<missing VAR>-plate (ac-plane) of crystallineHo0.5Dy0.5FeO3Pt (HD<missing VAR>FOPt) hybrid at various T<missing VAR> in therange, 11 to 300 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.08333333333333333,0.08333333333333333,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[169.0, 3, 'D', 2],[121.0, 3, 'D', 1],[25.0, 11, 'to', 0],[26.0, 300, 'K', 0],[297.0, 360, 'deg', 4],[313.0, 2.4, 'kOe', 5],[336.0, 150, 'K', 5],[358.0, 52, 'K', 5],[398.0, 25, 'K', 6]

H
###Probing magnetic anisotropy and spin-reorientation transition in 3D antiferromagnet, Ho$_{0.5}$Dy$_{0.5}$FeO$_{3}\vert$Pt using spin Hall magnetoresistance|Aditya A. Wagh,Priyanka Garg,Arijit Haldar,Kingshuk Mallick,Tirthankar Chakraborty,Suja Elizabeth,P. S. Anil Kumar###
(1865829, 1865829)
 We present spin Hall magnetoresistance(SMR) studies on a b<missing VAR>-plate (ac-plane) of crystallineHo0.5Dy0.5FeO3Pt (HD<missing VAR>FOPt) hybrid at various T<missing VAR> in therange, 11 to 300 K.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[179.0, 3, 'D', 2],[131.0, 3, 'D', 1],[22.0, 11, 'to', 0],[23.0, 300, 'K', 0],[294.0, 360, 'deg', 4],[310.0, 2.4, 'kOe', 5],[333.0, 150, 'K', 5],[355.0, 52, 'K', 5],[395.0, 25, 'K', 6]

Pt
###Probing magnetic anisotropy and spin-reorientation transition in 3D antiferromagnet, Ho$_{0.5}$Dy$_{0.5}$FeO$_{3}\vert$Pt using spin Hall magnetoresistance|Aditya A. Wagh,Priyanka Garg,Arijit Haldar,Kingshuk Mallick,Tirthankar Chakraborty,Suja Elizabeth,P. S. Anil Kumar###
(1865833, 1865833)
 We present spin Hall magnetoresistance(SMR) studies on a b<missing VAR>-plate (ac-plane) of crystallineHo0.5Dy0.5FeO3Pt (HD<missing VAR>FOPt) hybrid at various T<missing VAR> in therange, 11 to 300 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[183.0, 3, 'D', 2],[135.0, 3, 'D', 1],[18.0, 11, 'to', 0],[19.0, 300, 'K', 0],[290.0, 360, 'deg', 4],[306.0, 2.4, 'kOe', 5],[329.0, 150, 'K', 5],[351.0, 52, 'K', 5],[391.0, 25, 'K', 6]

In
###Probing magnetic anisotropy and spin-reorientation transition in 3D antiferromagnet, Ho$_{0.5}$Dy$_{0.5}$FeO$_{3}\vert$Pt using spin Hall magnetoresistance|Aditya A. Wagh,Priyanka Garg,Arijit Haldar,Kingshuk Mallick,Tirthankar Chakraborty,Suja Elizabeth,P. S. Anil Kumar###
(1865855, 1865855)
 In the room temperature Gamma4(Gx, Ay<missing VAR>, Fz) phase,the switching between two degenerate domains, Gamma4(Gx, Fz) andGamma4(-Gx, -Fz) occurs at fields above a critical value, Htextc<missing VAR>approx 713 Oe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[205.0, 3, 'D', 3],[157.0, 3, 'D', 2],[4.0, 11, 'to', 1],[3.0, 300, 'K', 1],[268.0, 360, 'deg', 3],[284.0, 2.4, 'kOe', 4],[307.0, 150, 'K', 4],[329.0, 52, 'K', 4],[369.0, 25, 'K', 5]

F
###Probing magnetic anisotropy and spin-reorientation transition in 3D antiferromagnet, Ho$_{0.5}$Dy$_{0.5}$FeO$_{3}\vert$Pt using spin Hall magnetoresistance|Aditya A. Wagh,Priyanka Garg,Arijit Haldar,Kingshuk Mallick,Tirthankar Chakraborty,Suja Elizabeth,P. S. Anil Kumar###
(1865874, 1865874)
 In the room temperature Gamma4(Gx, Ay<missing VAR>, Fz) phase,the switching between two degenerate domains, Gamma4(Gx, Fz) andGamma4(-Gx, -Fz) occurs at fields above a critical value, Htextc<missing VAR>approx 713 Oe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[224.0, 3, 'D', 3],[176.0, 3, 'D', 2],[23.0, 11, 'to', 1],[22.0, 300, 'K', 1],[249.0, 360, 'deg', 3],[265.0, 2.4, 'kOe', 4],[288.0, 150, 'K', 4],[310.0, 52, 'K', 4],[350.0, 25, 'K', 5]

F
###Probing magnetic anisotropy and spin-reorientation transition in 3D antiferromagnet, Ho$_{0.5}$Dy$_{0.5}$FeO$_{3}\vert$Pt using spin Hall magnetoresistance|Aditya A. Wagh,Priyanka Garg,Arijit Haldar,Kingshuk Mallick,Tirthankar Chakraborty,Suja Elizabeth,P. S. Anil Kumar###
(1865902, 1865902)
 In the room temperature Gamma4(Gx, Ay<missing VAR>, Fz) phase,the switching between two degenerate domains, Gamma4(Gx, Fz) andGamma4(-Gx, -Fz) occurs at fields above a critical value, Htextc<missing VAR>approx 713 Oe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[252.0, 3, 'D', 3],[204.0, 3, 'D', 2],[51.0, 11, 'to', 1],[50.0, 300, 'K', 1],[221.0, 360, 'deg', 3],[237.0, 2.4, 'kOe', 4],[260.0, 150, 'K', 4],[282.0, 52, 'K', 4],[322.0, 25, 'K', 5]

F
###Probing magnetic anisotropy and spin-reorientation transition in 3D antiferromagnet, Ho$_{0.5}$Dy$_{0.5}$FeO$_{3}\vert$Pt using spin Hall magnetoresistance|Aditya A. Wagh,Priyanka Garg,Arijit Haldar,Kingshuk Mallick,Tirthankar Chakraborty,Suja Elizabeth,P. S. Anil Kumar###
(1865918, 1865918)
 In the room temperature Gamma4(Gx, Ay<missing VAR>, Fz) phase,the switching between two degenerate domains, Gamma4(Gx, Fz) andGamma4(-Gx, -Fz) occurs at fields above a critical value, Htextc<missing VAR>approx 713 Oe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[268.0, 3, 'D', 3],[220.0, 3, 'D', 2],[67.0, 11, 'to', 1],[66.0, 300, 'K', 1],[205.0, 360, 'deg', 3],[221.0, 2.4, 'kOe', 4],[244.0, 150, 'K', 4],[266.0, 52, 'K', 4],[306.0, 25, 'K', 5]

H
###Probing magnetic anisotropy and spin-reorientation transition in 3D antiferromagnet, Ho$_{0.5}$Dy$_{0.5}$FeO$_{3}\vert$Pt using spin Hall magnetoresistance|Aditya A. Wagh,Priyanka Garg,Arijit Haldar,Kingshuk Mallick,Tirthankar Chakraborty,Suja Elizabeth,P. S. Anil Kumar###
(1865937, 1865937)
 In the room temperature Gamma4(Gx, Ay<missing VAR>, Fz) phase,the switching between two degenerate domains, Gamma4(Gx, Fz) andGamma4(-Gx, -Fz) occurs at fields above a critical value, Htextc<missing VAR>approx 713 Oe.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[287.0, 3, 'D', 3],[239.0, 3, 'D', 2],[86.0, 11, 'to', 1],[85.0, 300, 'K', 1],[186.0, 360, 'deg', 3],[202.0, 2.4, 'kOe', 4],[225.0, 150, 'K', 4],[247.0, 52, 'K', 4],[287.0, 25, 'K', 5]

H
###Probing magnetic anisotropy and spin-reorientation transition in 3D antiferromagnet, Ho$_{0.5}$Dy$_{0.5}$FeO$_{3}\vert$Pt using spin Hall magnetoresistance|Aditya A. Wagh,Priyanka Garg,Arijit Haldar,Kingshuk Mallick,Tirthankar Chakraborty,Suja Elizabeth,P. S. Anil Kumar###
(1865951, 1865951)
 Under H > Htextc<missing VAR>, the angular dependence of SMR(alpha-scan) in the Gamma4(Gx, Ay<missing VAR>, Fz) phase yielded a highly skewedcurve with a sharp change (sign-reversal) along with a rotational hysteresisaround a-axis.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[301.0, 3, 'D', 4],[253.0, 3, 'D', 3],[100.0, 11, 'to', 2],[99.0, 300, 'K', 2],[172.0, 360, 'deg', 2],[188.0, 2.4, 'kOe', 3],[211.0, 150, 'K', 3],[233.0, 52, 'K', 3],[273.0, 25, 'K', 4]

H
###Probing magnetic anisotropy and spin-reorientation transition in 3D antiferromagnet, Ho$_{0.5}$Dy$_{0.5}$FeO$_{3}\vert$Pt using spin Hall magnetoresistance|Aditya A. Wagh,Priyanka Garg,Arijit Haldar,Kingshuk Mallick,Tirthankar Chakraborty,Suja Elizabeth,P. S. Anil Kumar###
(1865955, 1865955)
 Under H > Htextc<missing VAR>, the angular dependence of SMR(alpha-scan) in the Gamma4(Gx, Ay<missing VAR>, Fz) phase yielded a highly skewedcurve with a sharp change (sign-reversal) along with a rotational hysteresisaround a-axis.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[305.0, 3, 'D', 4],[257.0, 3, 'D', 3],[104.0, 11, 'to', 2],[103.0, 300, 'K', 2],[168.0, 360, 'deg', 2],[184.0, 2.4, 'kOe', 3],[207.0, 150, 'K', 3],[229.0, 52, 'K', 3],[269.0, 25, 'K', 4]

S
###Probing magnetic anisotropy and spin-reorientation transition in 3D antiferromagnet, Ho$_{0.5}$Dy$_{0.5}$FeO$_{3}\vert$Pt using spin Hall magnetoresistance|Aditya A. Wagh,Priyanka Garg,Arijit Haldar,Kingshuk Mallick,Tirthankar Chakraborty,Suja Elizabeth,P. S. Anil Kumar###
(1865968, 1865968)
 Under H > Htextc<missing VAR>, the angular dependence of SMR(alpha-scan) in the Gamma4(Gx, Ay<missing VAR>, Fz) phase yielded a highly skewedcurve with a sharp change (sign-reversal) along with a rotational hysteresisaround a-axis.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[318.0, 3, 'D', 4],[270.0, 3, 'D', 3],[117.0, 11, 'to', 2],[116.0, 300, 'K', 2],[155.0, 360, 'deg', 2],[171.0, 2.4, 'kOe', 3],[194.0, 150, 'K', 3],[216.0, 52, 'K', 3],[256.0, 25, 'K', 4]

F
###Probing magnetic anisotropy and spin-reorientation transition in 3D antiferromagnet, Ho$_{0.5}$Dy$_{0.5}$FeO$_{3}\vert$Pt using spin Hall magnetoresistance|Aditya A. Wagh,Priyanka Garg,Arijit Haldar,Kingshuk Mallick,Tirthankar Chakraborty,Suja Elizabeth,P. S. Anil Kumar###
(1865994, 1865994)
 Under H > Htextc<missing VAR>, the angular dependence of SMR(alpha-scan) in the Gamma4(Gx, Ay<missing VAR>, Fz) phase yielded a highly skewedcurve with a sharp change (sign-reversal) along with a rotational hysteresisaround a-axis.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[344.0, 3, 'D', 4],[296.0, 3, 'D', 3],[143.0, 11, 'to', 2],[142.0, 300, 'K', 2],[129.0, 360, 'deg', 2],[145.0, 2.4, 'kOe', 3],[168.0, 150, 'K', 3],[190.0, 52, 'K', 3],[230.0, 25, 'K', 4]

H
###Probing magnetic anisotropy and spin-reorientation transition in 3D antiferromagnet, Ho$_{0.5}$Dy$_{0.5}$FeO$_{3}\vert$Pt using spin Hall magnetoresistance|Aditya A. Wagh,Priyanka Garg,Arijit Haldar,Kingshuk Mallick,Tirthankar Chakraborty,Suja Elizabeth,P. S. Anil Kumar###
(1866057, 1866057)
 This hysteresis decreases with an increase in H.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[407.0, 3, 'D', 5],[359.0, 3, 'D', 4],[206.0, 11, 'to', 3],[205.0, 300, 'K', 3],[66.0, 360, 'deg', 1],[82.0, 2.4, 'kOe', 2],[105.0, 150, 'K', 2],[127.0, 52, 'K', 2],[167.0, 25, 'K', 3]

H
###Probing magnetic anisotropy and spin-reorientation transition in 3D antiferromagnet, Ho$_{0.5}$Dy$_{0.5}$FeO$_{3}\vert$Pt using spin Hall magnetoresistance|Aditya A. Wagh,Priyanka Garg,Arijit Haldar,Kingshuk Mallick,Tirthankar Chakraborty,Suja Elizabeth,P. S. Anil Kumar###
(1866066, 1866066)
 Notably, atH < Htextc<missing VAR> , the alpha-scan measurements on the single domain,Gamma4(pm Gx, pm Fz) exhibited an anomalous sinusoidal signal ofperiodicity 360 deg.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[416.0, 3, 'D', 6],[368.0, 3, 'D', 5],[215.0, 11, 'to', 4],[214.0, 300, 'K', 4],[57.0, 360, 'deg', 0],[73.0, 2.4, 'kOe', 1],[96.0, 150, 'K', 1],[118.0, 52, 'K', 1],[158.0, 25, 'K', 2]

H
###Probing magnetic anisotropy and spin-reorientation transition in 3D antiferromagnet, Ho$_{0.5}$Dy$_{0.5}$FeO$_{3}\vert$Pt using spin Hall magnetoresistance|Aditya A. Wagh,Priyanka Garg,Arijit Haldar,Kingshuk Mallick,Tirthankar Chakraborty,Suja Elizabeth,P. S. Anil Kumar###
(1866070, 1866070)
 Notably, atH < Htextc<missing VAR> , the alpha-scan measurements on the single domain,Gamma4(pm Gx, pm Fz) exhibited an anomalous sinusoidal signal ofperiodicity 360 deg.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[420.0, 3, 'D', 6],[372.0, 3, 'D', 5],[219.0, 11, 'to', 4],[218.0, 300, 'K', 4],[53.0, 360, 'deg', 0],[69.0, 2.4, 'kOe', 1],[92.0, 150, 'K', 1],[114.0, 52, 'K', 1],[154.0, 25, 'K', 2]

F
###Probing magnetic anisotropy and spin-reorientation transition in 3D antiferromagnet, Ho$_{0.5}$Dy$_{0.5}$FeO$_{3}\vert$Pt using spin Hall magnetoresistance|Aditya A. Wagh,Priyanka Garg,Arijit Haldar,Kingshuk Mallick,Tirthankar Chakraborty,Suja Elizabeth,P. S. Anil Kumar###
(1866105, 1866105)
 Notably, atH < Htextc<missing VAR> , the alpha-scan measurements on the single domain,Gamma4(pm Gx, pm Fz) exhibited an anomalous sinusoidal signal ofperiodicity 360 deg.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[455.0, 3, 'D', 6],[407.0, 3, 'D', 5],[254.0, 11, 'to', 4],[253.0, 300, 'K', 4],[18.0, 360, 'deg', 0],[34.0, 2.4, 'kOe', 1],[57.0, 150, 'K', 1],[79.0, 52, 'K', 1],[119.0, 25, 'K', 2]

S
###Probing magnetic anisotropy and spin-reorientation transition in 3D antiferromagnet, Ho$_{0.5}$Dy$_{0.5}$FeO$_{3}\vert$Pt using spin Hall magnetoresistance|Aditya A. Wagh,Priyanka Garg,Arijit Haldar,Kingshuk Mallick,Tirthankar Chakraborty,Suja Elizabeth,P. S. Anil Kumar###
(1866130, 1866130)
 Low-T<missing VAR> SMR curves (H  2.4 kOe), showed a systematicnarrowing of the hysteresis (down to 150 K) and a gradual reduction in theskewness (150 to 52 K), suggesting weakening of the anisotropy possibly due tothe T<missing VAR>-evolution of Fe-RE exchange coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[480.0, 3, 'D', 7],[432.0, 3, 'D', 6],[279.0, 11, 'to', 5],[278.0, 300, 'K', 5],[7.0, 360, 'deg', 1],[9.0, 2.4, 'kOe', 0],[32.0, 150, 'K', 0],[54.0, 52, 'K', 0],[94.0, 25, 'K', 1]

H
###Probing magnetic anisotropy and spin-reorientation transition in 3D antiferromagnet, Ho$_{0.5}$Dy$_{0.5}$FeO$_{3}\vert$Pt using spin Hall magnetoresistance|Aditya A. Wagh,Priyanka Garg,Arijit Haldar,Kingshuk Mallick,Tirthankar Chakraborty,Suja Elizabeth,P. S. Anil Kumar###
(1866137, 1866137)
 Low-T<missing VAR> SMR curves (H  2.4 kOe), showed a systematicnarrowing of the hysteresis (down to 150 K) and a gradual reduction in theskewness (150 to 52 K), suggesting weakening of the anisotropy possibly due tothe T<missing VAR>-evolution of Fe-RE exchange coupling.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[487.0, 3, 'D', 7],[439.0, 3, 'D', 6],[286.0, 11, 'to', 5],[285.0, 300, 'K', 5],[14.0, 360, 'deg', 1],[2.0, 2.4, 'kOe', 0],[25.0, 150, 'K', 0],[47.0, 52, 'K', 0],[87.0, 25, 'K', 1]

Fe
###Probing magnetic anisotropy and spin-reorientation transition in 3D antiferromagnet, Ho$_{0.5}$Dy$_{0.5}$FeO$_{3}\vert$Pt using spin Hall magnetoresistance|Aditya A. Wagh,Priyanka Garg,Arijit Haldar,Kingshuk Mallick,Tirthankar Chakraborty,Suja Elizabeth,P. S. Anil Kumar###
(1866213, 1866213)
 Low-T<missing VAR> SMR curves (H  2.4 kOe), showed a systematicnarrowing of the hysteresis (down to 150 K) and a gradual reduction in theskewness (150 to 52 K), suggesting weakening of the anisotropy possibly due tothe T<missing VAR>-evolution of Fe-RE exchange coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[563.0, 3, 'D', 7],[515.0, 3, 'D', 6],[362.0, 11, 'to', 5],[361.0, 300, 'K', 5],[90.0, 360, 'deg', 1],[74.0, 2.4, 'kOe', 0],[51.0, 150, 'K', 0],[29.0, 52, 'K', 0],[11.0, 25, 'K', 1]

S
###Probing magnetic anisotropy and spin-reorientation transition in 3D antiferromagnet, Ho$_{0.5}$Dy$_{0.5}$FeO$_{3}\vert$Pt using spin Hall magnetoresistance|Aditya A. Wagh,Priyanka Garg,Arijit Haldar,Kingshuk Mallick,Tirthankar Chakraborty,Suja Elizabeth,P. S. Anil Kumar###
(1866229, 1866229)
 Below 25 K, the SMR modulationshowed an abrupt change around the c<missing VAR>-axis, marking the presence ofGamma2(Fx<missing VAR>,Cy,Gz) phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[579.0, 3, 'D', 8],[531.0, 3, 'D', 7],[378.0, 11, 'to', 6],[377.0, 300, 'K', 6],[106.0, 360, 'deg', 2],[90.0, 2.4, 'kOe', 1],[67.0, 150, 'K', 1],[45.0, 52, 'K', 1],[5.0, 25, 'K', 0]

F
###Probing magnetic anisotropy and spin-reorientation transition in 3D antiferromagnet, Ho$_{0.5}$Dy$_{0.5}$FeO$_{3}\vert$Pt using spin Hall magnetoresistance|Aditya A. Wagh,Priyanka Garg,Arijit Haldar,Kingshuk Mallick,Tirthankar Chakraborty,Suja Elizabeth,P. S. Anil Kumar###
(1866265, 1866265)
 Below 25 K, the SMR modulationshowed an abrupt change around the c<missing VAR>-axis, marking the presence ofGamma2(Fx<missing VAR>,Cy,Gz) phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[615.0, 3, 'D', 8],[567.0, 3, 'D', 7],[414.0, 11, 'to', 6],[413.0, 300, 'K', 6],[142.0, 360, 'deg', 2],[126.0, 2.4, 'kOe', 1],[103.0, 150, 'K', 1],[81.0, 52, 'K', 1],[41.0, 25, 'K', 0]

C
###Probing magnetic anisotropy and spin-reorientation transition in 3D antiferromagnet, Ho$_{0.5}$Dy$_{0.5}$FeO$_{3}\vert$Pt using spin Hall magnetoresistance|Aditya A. Wagh,Priyanka Garg,Arijit Haldar,Kingshuk Mallick,Tirthankar Chakraborty,Suja Elizabeth,P. S. Anil Kumar###
(1866268, 1866268)
 Below 25 K, the SMR modulationshowed an abrupt change around the c<missing VAR>-axis, marking the presence ofGamma2(Fx<missing VAR>,Cy,Gz) phase.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[618.0, 3, 'D', 8],[570.0, 3, 'D', 7],[417.0, 11, 'to', 6],[416.0, 300, 'K', 6],[145.0, 360, 'deg', 2],[129.0, 2.4, 'kOe', 1],[106.0, 150, 'K', 1],[84.0, 52, 'K', 1],[44.0, 25, 'K', 0]

S
###Probing magnetic anisotropy and spin-reorientation transition in 3D antiferromagnet, Ho$_{0.5}$Dy$_{0.5}$FeO$_{3}\vert$Pt using spin Hall magnetoresistance|Aditya A. Wagh,Priyanka Garg,Arijit Haldar,Kingshuk Mallick,Tirthankar Chakraborty,Suja Elizabeth,P. S. Anil Kumar###
(1866295, 1866295)
 We have employed a simple Hamiltonian andcomputed SMR to examine the observed skewed SMR modulation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[645.0, 3, 'D', 9],[597.0, 3, 'D', 8],[444.0, 11, 'to', 7],[443.0, 300, 'K', 7],[172.0, 360, 'deg', 3],[156.0, 2.4, 'kOe', 2],[133.0, 150, 'K', 2],[111.0, 52, 'K', 2],[71.0, 25, 'K', 1]

S
###Probing magnetic anisotropy and spin-reorientation transition in 3D antiferromagnet, Ho$_{0.5}$Dy$_{0.5}$FeO$_{3}\vert$Pt using spin Hall magnetoresistance|Aditya A. Wagh,Priyanka Garg,Arijit Haldar,Kingshuk Mallick,Tirthankar Chakraborty,Suja Elizabeth,P. S. Anil Kumar###
(1866309, 1866309)
 We have employed a simple Hamiltonian andcomputed SMR to examine the observed skewed SMR modulation.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[659.0, 3, 'D', 9],[611.0, 3, 'D', 8],[458.0, 11, 'to', 7],[457.0, 300, 'K', 7],[186.0, 360, 'deg', 3],[170.0, 2.4, 'kOe', 2],[147.0, 150, 'K', 2],[125.0, 52, 'K', 2],[85.0, 25, 'K', 1]

In
###Probing magnetic anisotropy and spin-reorientation transition in 3D antiferromagnet, Ho$_{0.5}$Dy$_{0.5}$FeO$_{3}\vert$Pt using spin Hall magnetoresistance|Aditya A. Wagh,Priyanka Garg,Arijit Haldar,Kingshuk Mallick,Tirthankar Chakraborty,Suja Elizabeth,P. S. Anil Kumar###
(1866316, 1866316)
 In summary, SMR isfound to be an effective tool to probe magnetic anisotropy as well as a spinreorientation in HD<missing VAR>FO.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[666.0, 3, 'D', 10],[618.0, 3, 'D', 9],[465.0, 11, 'to', 8],[464.0, 300, 'K', 8],[193.0, 360, 'deg', 4],[177.0, 2.4, 'kOe', 3],[154.0, 150, 'K', 3],[132.0, 52, 'K', 3],[92.0, 25, 'K', 2]

S
###Probing magnetic anisotropy and spin-reorientation transition in 3D antiferromagnet, Ho$_{0.5}$Dy$_{0.5}$FeO$_{3}\vert$Pt using spin Hall magnetoresistance|Aditya A. Wagh,Priyanka Garg,Arijit Haldar,Kingshuk Mallick,Tirthankar Chakraborty,Suja Elizabeth,P. S. Anil Kumar###
(1866321, 1866321)
 In summary, SMR isfound to be an effective tool to probe magnetic anisotropy as well as a spinreorientation in HD<missing VAR>FO.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[671.0, 3, 'D', 10],[623.0, 3, 'D', 9],[470.0, 11, 'to', 8],[469.0, 300, 'K', 8],[198.0, 360, 'deg', 4],[182.0, 2.4, 'kOe', 3],[159.0, 150, 'K', 3],[137.0, 52, 'K', 3],[97.0, 25, 'K', 2]

H
###Probing magnetic anisotropy and spin-reorientation transition in 3D antiferromagnet, Ho$_{0.5}$Dy$_{0.5}$FeO$_{3}\vert$Pt using spin Hall magnetoresistance|Aditya A. Wagh,Priyanka Garg,Arijit Haldar,Kingshuk Mallick,Tirthankar Chakraborty,Suja Elizabeth,P. S. Anil Kumar###
(1866363, 1866363)
 In summary, SMR isfound to be an effective tool to probe magnetic anisotropy as well as a spinreorientation in HD<missing VAR>FO.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[713.0, 3, 'D', 10],[665.0, 3, 'D', 9],[512.0, 11, 'to', 8],[511.0, 300, 'K', 8],[240.0, 360, 'deg', 4],[224.0, 2.4, 'kOe', 3],[201.0, 150, 'K', 3],[179.0, 52, 'K', 3],[139.0, 25, 'K', 2]

FO
###Probing magnetic anisotropy and spin-reorientation transition in 3D antiferromagnet, Ho$_{0.5}$Dy$_{0.5}$FeO$_{3}\vert$Pt using spin Hall magnetoresistance|Aditya A. Wagh,Priyanka Garg,Arijit Haldar,Kingshuk Mallick,Tirthankar Chakraborty,Suja Elizabeth,P. S. Anil Kumar###
(1866365, 1866366)
 In summary, SMR isfound to be an effective tool to probe magnetic anisotropy as well as a spinreorientation in HD<missing VAR>FO.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[715.0, 3, 'D', 10],[667.0, 3, 'D', 9],[514.0, 11, 'to', 8],[513.0, 300, 'K', 8],[242.0, 360, 'deg', 4],[226.0, 2.4, 'kOe', 3],[203.0, 150, 'K', 3],[181.0, 52, 'K', 3],[141.0, 25, 'K', 2]

H
###Probing magnetic anisotropy and spin-reorientation transition in 3D antiferromagnet, Ho$_{0.5}$Dy$_{0.5}$FeO$_{3}\vert$Pt using spin Hall magnetoresistance|Aditya A. Wagh,Priyanka Garg,Arijit Haldar,Kingshuk Mallick,Tirthankar Chakraborty,Suja Elizabeth,P. S. Anil Kumar###
(1866386, 1866386)
 Our spin-transport study highlights the potential ofHD<missing VAR>FO for future AFM<missing VAR> spintronic devices.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[736.0, 3, 'D', 11],[688.0, 3, 'D', 10],[535.0, 11, 'to', 9],[534.0, 300, 'K', 9],[263.0, 360, 'deg', 5],[247.0, 2.4, 'kOe', 4],[224.0, 150, 'K', 4],[202.0, 52, 'K', 4],[162.0, 25, 'K', 3]

FO
###Probing magnetic anisotropy and spin-reorientation transition in 3D antiferromagnet, Ho$_{0.5}$Dy$_{0.5}$FeO$_{3}\vert$Pt using spin Hall magnetoresistance|Aditya A. Wagh,Priyanka Garg,Arijit Haldar,Kingshuk Mallick,Tirthankar Chakraborty,Suja Elizabeth,P. S. Anil Kumar###
(1866388, 1866389)
 Our spin-transport study highlights the potential ofHD<missing VAR>FO for future AFM<missing VAR> spintronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[738.0, 3, 'D', 11],[690.0, 3, 'D', 10],[537.0, 11, 'to', 9],[536.0, 300, 'K', 9],[265.0, 360, 'deg', 5],[249.0, 2.4, 'kOe', 4],[226.0, 150, 'K', 4],[204.0, 52, 'K', 4],[164.0, 25, 'K', 3]

F
###Probing magnetic anisotropy and spin-reorientation transition in 3D antiferromagnet, Ho$_{0.5}$Dy$_{0.5}$FeO$_{3}\vert$Pt using spin Hall magnetoresistance|Aditya A. Wagh,Priyanka Garg,Arijit Haldar,Kingshuk Mallick,Tirthankar Chakraborty,Suja Elizabeth,P. S. Anil Kumar###
(1866396, 1866396)
 Our spin-transport study highlights the potential ofHD<missing VAR>FO for future AFM<missing VAR> spintronic devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[746.0, 3, 'D', 11],[698.0, 3, 'D', 10],[545.0, 11, 'to', 9],[544.0, 300, 'K', 9],[273.0, 360, 'deg', 5],[257.0, 2.4, 'kOe', 4],[234.0, 150, 'K', 4],[212.0, 52, 'K', 4],[172.0, 25, 'K', 3]

Sr3
###Highly tunable spin Hall magnetoresistance in room-temperature magnetoelectric multiferroic, $\text{Sr}_{3}\text{Co}_{2}\text{Fe}_{24}\text{O}_{41}|$Pt hybrids|Aditya A. Wagh,Priyanka Garg,Kingshuk Mallick,Suja Elizabeth,P. S. Anil Kumar###
(1866434, 1866435)
Highly tunable spin Hall magnetoresistance in room-temperature magnetoelectric multiferroic, textSr3textCo2textFe24textO41Pt hybrids.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[147.0, 50, 'to', 2],[148.0, 100, 'kOe', 2],[257.0, 14, 'kOe', 5],[373.0, 2.5, 'kOe', 7],[509.0, 500, 'nV', 9],[543.0, 60, 'kOe', 9]

Co2
###Highly tunable spin Hall magnetoresistance in room-temperature magnetoelectric multiferroic, $\text{Sr}_{3}\text{Co}_{2}\text{Fe}_{24}\text{O}_{41}|$Pt hybrids|Aditya A. Wagh,Priyanka Garg,Kingshuk Mallick,Suja Elizabeth,P. S. Anil Kumar###
(1866437, 1866438)
Highly tunable spin Hall magnetoresistance in room-temperature magnetoelectric multiferroic, textSr3textCo2textFe24textO41Pt hybrids.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[144.0, 50, 'to', 2],[145.0, 100, 'kOe', 2],[254.0, 14, 'kOe', 5],[370.0, 2.5, 'kOe', 7],[506.0, 500, 'nV', 9],[540.0, 60, 'kOe', 9]

Fe24
###Highly tunable spin Hall magnetoresistance in room-temperature magnetoelectric multiferroic, $\text{Sr}_{3}\text{Co}_{2}\text{Fe}_{24}\text{O}_{41}|$Pt hybrids|Aditya A. Wagh,Priyanka Garg,Kingshuk Mallick,Suja Elizabeth,P. S. Anil Kumar###
(1866440, 1866441)
Highly tunable spin Hall magnetoresistance in room-temperature magnetoelectric multiferroic, textSr3textCo2textFe24textO41Pt hybrids.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[141.0, 50, 'to', 2],[142.0, 100, 'kOe', 2],[251.0, 14, 'kOe', 5],[367.0, 2.5, 'kOe', 7],[503.0, 500, 'nV', 9],[537.0, 60, 'kOe', 9]

O41Pt
###Highly tunable spin Hall magnetoresistance in room-temperature magnetoelectric multiferroic, $\text{Sr}_{3}\text{Co}_{2}\text{Fe}_{24}\text{O}_{41}|$Pt hybrids|Aditya A. Wagh,Priyanka Garg,Kingshuk Mallick,Suja Elizabeth,P. S. Anil Kumar###
(1866443, 1866445)
Highly tunable spin Hall magnetoresistance in room-temperature magnetoelectric multiferroic, textSr3textCo2textFe24textO41Pt hybrids.
Featurization terminated normally.
0,0,0,0,0,0,0,0.9761904761904762,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.023809523809523808,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[137.0, 50, 'to', 2],[138.0, 100, 'kOe', 2],[247.0, 14, 'kOe', 5],[363.0, 2.5, 'kOe', 7],[499.0, 500, 'nV', 9],[533.0, 60, 'kOe', 9]

Sr3
###Highly tunable spin Hall magnetoresistance in room-temperature magnetoelectric multiferroic, $\text{Sr}_{3}\text{Co}_{2}\text{Fe}_{24}\text{O}_{41}|$Pt hybrids|Aditya A. Wagh,Priyanka Garg,Kingshuk Mallick,Suja Elizabeth,P. S. Anil Kumar###
(1866482, 1866483)
 We present spin transport studies on a low-field, room-temperaturemagnetoelectric multiferroic polycrystallinetextSr3textCo2textFe24textO41 (SCFO)Ptheterostructure wherein a highly tunable transverse conical magnetic phase isresponsible for static and dynamic magnetoelectric coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 50, 'to', 1],[100.0, 100, 'kOe', 1],[209.0, 14, 'kOe', 4],[325.0, 2.5, 'kOe', 6],[461.0, 500, 'nV', 8],[495.0, 60, 'kOe', 8]

Co2
###Highly tunable spin Hall magnetoresistance in room-temperature magnetoelectric multiferroic, $\text{Sr}_{3}\text{Co}_{2}\text{Fe}_{24}\text{O}_{41}|$Pt hybrids|Aditya A. Wagh,Priyanka Garg,Kingshuk Mallick,Suja Elizabeth,P. S. Anil Kumar###
(1866485, 1866486)
 We present spin transport studies on a low-field, room-temperaturemagnetoelectric multiferroic polycrystallinetextSr3textCo2textFe24textO41 (SCFO)Ptheterostructure wherein a highly tunable transverse conical magnetic phase isresponsible for static and dynamic magnetoelectric coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 50, 'to', 1],[97.0, 100, 'kOe', 1],[206.0, 14, 'kOe', 4],[322.0, 2.5, 'kOe', 6],[458.0, 500, 'nV', 8],[492.0, 60, 'kOe', 8]

Fe24
###Highly tunable spin Hall magnetoresistance in room-temperature magnetoelectric multiferroic, $\text{Sr}_{3}\text{Co}_{2}\text{Fe}_{24}\text{O}_{41}|$Pt hybrids|Aditya A. Wagh,Priyanka Garg,Kingshuk Mallick,Suja Elizabeth,P. S. Anil Kumar###
(1866488, 1866489)
 We present spin transport studies on a low-field, room-temperaturemagnetoelectric multiferroic polycrystallinetextSr3textCo2textFe24textO41 (SCFO)Ptheterostructure wherein a highly tunable transverse conical magnetic phase isresponsible for static and dynamic magnetoelectric coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[93.0, 50, 'to', 1],[94.0, 100, 'kOe', 1],[203.0, 14, 'kOe', 4],[319.0, 2.5, 'kOe', 6],[455.0, 500, 'nV', 8],[489.0, 60, 'kOe', 8]

O41
###Highly tunable spin Hall magnetoresistance in room-temperature magnetoelectric multiferroic, $\text{Sr}_{3}\text{Co}_{2}\text{Fe}_{24}\text{O}_{41}|$Pt hybrids|Aditya A. Wagh,Priyanka Garg,Kingshuk Mallick,Suja Elizabeth,P. S. Anil Kumar###
(1866491, 1866492)
 We present spin transport studies on a low-field, room-temperaturemagnetoelectric multiferroic polycrystallinetextSr3textCo2textFe24textO41 (SCFO)Ptheterostructure wherein a highly tunable transverse conical magnetic phase isresponsible for static and dynamic magnetoelectric coupling.
Featurization terminated normally.
0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 50, 'to', 1],[91.0, 100, 'kOe', 1],[200.0, 14, 'kOe', 4],[316.0, 2.5, 'kOe', 6],[452.0, 500, 'nV', 8],[486.0, 60, 'kOe', 8]

(SCFO)Pt
###Highly tunable spin Hall magnetoresistance in room-temperature magnetoelectric multiferroic, $\text{Sr}_{3}\text{Co}_{2}\text{Fe}_{24}\text{O}_{41}|$Pt hybrids|Aditya A. Wagh,Priyanka Garg,Kingshuk Mallick,Suja Elizabeth,P. S. Anil Kumar###
(1866494, 1866500)
 We present spin transport studies on a low-field, room-temperaturemagnetoelectric multiferroic polycrystallinetextSr3textCo2textFe24textO41 (SCFO)Ptheterostructure wherein a highly tunable transverse conical magnetic phase isresponsible for static and dynamic magnetoelectric coupling.
Featurization terminated normally.
0,0,0,0,0,0.2,0,0.2,0.2,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 50, 'to', 1],[83.0, 100, 'kOe', 1],[192.0, 14, 'kOe', 4],[308.0, 2.5, 'kOe', 6],[444.0, 500, 'nV', 8],[478.0, 60, 'kOe', 8]

S
###Highly tunable spin Hall magnetoresistance in room-temperature magnetoelectric multiferroic, $\text{Sr}_{3}\text{Co}_{2}\text{Fe}_{24}\text{O}_{41}|$Pt hybrids|Aditya A. Wagh,Priyanka Garg,Kingshuk Mallick,Suja Elizabeth,P. S. Anil Kumar###
(1866557, 1866557)
 We measuredangular dependence of spin Hall magnetoresistance (SMR) at constant magneticfields (H) in the range of 50 to 100 kOe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[25.0, 50, 'to', 0],[26.0, 100, 'kOe', 0],[135.0, 14, 'kOe', 3],[251.0, 2.5, 'kOe', 5],[387.0, 500, 'nV', 7],[421.0, 60, 'kOe', 7]

(H)
###Highly tunable spin Hall magnetoresistance in room-temperature magnetoelectric multiferroic, $\text{Sr}_{3}\text{Co}_{2}\text{Fe}_{24}\text{O}_{41}|$Pt hybrids|Aditya A. Wagh,Priyanka Garg,Kingshuk Mallick,Suja Elizabeth,P. S. Anil Kumar###
(1866571, 1866573)
 We measuredangular dependence of spin Hall magnetoresistance (SMR) at constant magneticfields (H) in the range of 50 to 100 kOe.
Featurization successful!
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[9.0, 50, 'to', 0],[10.0, 100, 'kOe', 0],[119.0, 14, 'kOe', 3],[235.0, 2.5, 'kOe', 5],[371.0, 500, 'nV', 7],[405.0, 60, 'kOe', 7]

S
###Highly tunable spin Hall magnetoresistance in room-temperature magnetoelectric multiferroic, $\text{Sr}_{3}\text{Co}_{2}\text{Fe}_{24}\text{O}_{41}|$Pt hybrids|Aditya A. Wagh,Priyanka Garg,Kingshuk Mallick,Suja Elizabeth,P. S. Anil Kumar###
(1866613, 1866613)
 Application of field below thecritical value (2.5 k<missing VAR>Oe), yielded negative SMR and the H-evolution ofnormalized SMR exhibited a negative gradient.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[31.0, 50, 'to', 1],[30.0, 100, 'kOe', 1],[79.0, 14, 'kOe', 2],[195.0, 2.5, 'kOe', 4],[331.0, 500, 'nV', 6],[365.0, 60, 'kOe', 6]

H
###Highly tunable spin Hall magnetoresistance in room-temperature magnetoelectric multiferroic, $\text{Sr}_{3}\text{Co}_{2}\text{Fe}_{24}\text{O}_{41}|$Pt hybrids|Aditya A. Wagh,Priyanka Garg,Kingshuk Mallick,Suja Elizabeth,P. S. Anil Kumar###
(1866621, 1866621)
 Application of field below thecritical value (2.5 k<missing VAR>Oe), yielded negative SMR and the H-evolution ofnormalized SMR exhibited a negative gradient.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[39.0, 50, 'to', 1],[38.0, 100, 'kOe', 1],[71.0, 14, 'kOe', 2],[187.0, 2.5, 'kOe', 4],[323.0, 500, 'nV', 6],[357.0, 60, 'kOe', 6]

S
###Highly tunable spin Hall magnetoresistance in room-temperature magnetoelectric multiferroic, $\text{Sr}_{3}\text{Co}_{2}\text{Fe}_{24}\text{O}_{41}|$Pt hybrids|Aditya A. Wagh,Priyanka Garg,Kingshuk Mallick,Suja Elizabeth,P. S. Anil Kumar###
(1866630, 1866630)
 Application of field below thecritical value (2.5 k<missing VAR>Oe), yielded negative SMR and the H-evolution ofnormalized SMR exhibited a negative gradient.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 50, 'to', 1],[47.0, 100, 'kOe', 1],[62.0, 14, 'kOe', 2],[178.0, 2.5, 'kOe', 4],[314.0, 500, 'nV', 6],[348.0, 60, 'kOe', 6]

H
###Highly tunable spin Hall magnetoresistance in room-temperature magnetoelectric multiferroic, $\text{Sr}_{3}\text{Co}_{2}\text{Fe}_{24}\text{O}_{41}|$Pt hybrids|Aditya A. Wagh,Priyanka Garg,Kingshuk Mallick,Suja Elizabeth,P. S. Anil Kumar###
(1866654, 1866654)
 Further, an increase in the Hresulted in the positive slope of normalized SMR Vs.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 50, 'to', 2],[71.0, 100, 'kOe', 2],[38.0, 14, 'kOe', 1],[154.0, 2.5, 'kOe', 3],[290.0, 500, 'nV', 5],[324.0, 60, 'kOe', 5]

S
###Highly tunable spin Hall magnetoresistance in room-temperature magnetoelectric multiferroic, $\text{Sr}_{3}\text{Co}_{2}\text{Fe}_{24}\text{O}_{41}|$Pt hybrids|Aditya A. Wagh,Priyanka Garg,Kingshuk Mallick,Suja Elizabeth,P. S. Anil Kumar###
(1866671, 1866671)
 Further, an increase in the Hresulted in the positive slope of normalized SMR Vs.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[89.0, 50, 'to', 2],[88.0, 100, 'kOe', 2],[21.0, 14, 'kOe', 1],[137.0, 2.5, 'kOe', 3],[273.0, 500, 'nV', 5],[307.0, 60, 'kOe', 5]

H
###Highly tunable spin Hall magnetoresistance in room-temperature magnetoelectric multiferroic, $\text{Sr}_{3}\text{Co}_{2}\text{Fe}_{24}\text{O}_{41}|$Pt hybrids|Aditya A. Wagh,Priyanka Garg,Kingshuk Mallick,Suja Elizabeth,P. S. Anil Kumar###
(1866678, 1866678)
 H and later at higherH around 14 kOe, a crossover from negative to positive SMR was observed.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 50, 'to', 3],[95.0, 100, 'kOe', 3],[14.0, 14, 'kOe', 0],[130.0, 2.5, 'kOe', 2],[266.0, 500, 'nV', 4],[300.0, 60, 'kOe', 4]

H
###Highly tunable spin Hall magnetoresistance in room-temperature magnetoelectric multiferroic, $\text{Sr}_{3}\text{Co}_{2}\text{Fe}_{24}\text{O}_{41}|$Pt hybrids|Aditya A. Wagh,Priyanka Garg,Kingshuk Mallick,Suja Elizabeth,P. S. Anil Kumar###
(1866689, 1866689)
 H and later at higherH around 14 kOe, a crossover from negative to positive SMR was observed.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[107.0, 50, 'to', 3],[106.0, 100, 'kOe', 3],[3.0, 14, 'kOe', 0],[119.0, 2.5, 'kOe', 2],[255.0, 500, 'nV', 4],[289.0, 60, 'kOe', 4]

S
###Highly tunable spin Hall magnetoresistance in room-temperature magnetoelectric multiferroic, $\text{Sr}_{3}\text{Co}_{2}\text{Fe}_{24}\text{O}_{41}|$Pt hybrids|Aditya A. Wagh,Priyanka Garg,Kingshuk Mallick,Suja Elizabeth,P. S. Anil Kumar###
(1866707, 1866707)
 H and later at higherH around 14 kOe, a crossover from negative to positive SMR was observed.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[125.0, 50, 'to', 3],[124.0, 100, 'kOe', 3],[15.0, 14, 'kOe', 0],[101.0, 2.5, 'kOe', 2],[237.0, 500, 'nV', 4],[271.0, 60, 'kOe', 4]

S
###Highly tunable spin Hall magnetoresistance in room-temperature magnetoelectric multiferroic, $\text{Sr}_{3}\text{Co}_{2}\text{Fe}_{24}\text{O}_{41}|$Pt hybrids|Aditya A. Wagh,Priyanka Garg,Kingshuk Mallick,Suja Elizabeth,P. S. Anil Kumar###
(1866746, 1866746)
 Weemployed a simple model for estimating the equilibrium magnetic configurationand computed the SMR modulation at various values of H.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 50, 'to', 4],[163.0, 100, 'kOe', 4],[54.0, 14, 'kOe', 1],[62.0, 2.5, 'kOe', 1],[198.0, 500, 'nV', 3],[232.0, 60, 'kOe', 3]

H
###Highly tunable spin Hall magnetoresistance in room-temperature magnetoelectric multiferroic, $\text{Sr}_{3}\text{Co}_{2}\text{Fe}_{24}\text{O}_{41}|$Pt hybrids|Aditya A. Wagh,Priyanka Garg,Kingshuk Mallick,Suja Elizabeth,P. S. Anil Kumar###
(1866760, 1866760)
 Weemployed a simple model for estimating the equilibrium magnetic configurationand computed the SMR modulation at various values of H.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[178.0, 50, 'to', 4],[177.0, 100, 'kOe', 4],[68.0, 14, 'kOe', 1],[48.0, 2.5, 'kOe', 1],[184.0, 500, 'nV', 3],[218.0, 60, 'kOe', 3]

S
###Highly tunable spin Hall magnetoresistance in room-temperature magnetoelectric multiferroic, $\text{Sr}_{3}\text{Co}_{2}\text{Fe}_{24}\text{O}_{41}|$Pt hybrids|Aditya A. Wagh,Priyanka Garg,Kingshuk Mallick,Suja Elizabeth,P. S. Anil Kumar###
(1866803, 1866803)
 We argue that thetilting of the cone is dominant and in turn responsible for the observed natureof SMR below 2.5 kOe while, the closing of the cone-angle is pronounced athigher fields causing a reversal in sign of the SMR from negative to positive.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[221.0, 50, 'to', 5],[220.0, 100, 'kOe', 5],[111.0, 14, 'kOe', 2],[5.0, 2.5, 'kOe', 0],[141.0, 500, 'nV', 2],[175.0, 60, 'kOe', 2]

S
###Highly tunable spin Hall magnetoresistance in room-temperature magnetoelectric multiferroic, $\text{Sr}_{3}\text{Co}_{2}\text{Fe}_{24}\text{O}_{41}|$Pt hybrids|Aditya A. Wagh,Priyanka Garg,Kingshuk Mallick,Suja Elizabeth,P. S. Anil Kumar###
(1866850, 1866850)
 We argue that thetilting of the cone is dominant and in turn responsible for the observed natureof SMR below 2.5 kOe while, the closing of the cone-angle is pronounced athigher fields causing a reversal in sign of the SMR from negative to positive.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[268.0, 50, 'to', 5],[267.0, 100, 'kOe', 5],[158.0, 14, 'kOe', 2],[42.0, 2.5, 'kOe', 0],[94.0, 500, 'nV', 2],[128.0, 60, 'kOe', 2]

S
###Highly tunable spin Hall magnetoresistance in room-temperature magnetoelectric multiferroic, $\text{Sr}_{3}\text{Co}_{2}\text{Fe}_{24}\text{O}_{41}|$Pt hybrids|Aditya A. Wagh,Priyanka Garg,Kingshuk Mallick,Suja Elizabeth,P. S. Anil Kumar###
(1866867, 1866867)
Importantly, SMR experiments revealed that a change in the helicity with areversal of the magnetic field has no influence on the observed SMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[285.0, 50, 'to', 6],[284.0, 100, 'kOe', 6],[175.0, 14, 'kOe', 3],[59.0, 2.5, 'kOe', 1],[77.0, 500, 'nV', 1],[111.0, 60, 'kOe', 1]

S
###Highly tunable spin Hall magnetoresistance in room-temperature magnetoelectric multiferroic, $\text{Sr}_{3}\text{Co}_{2}\text{Fe}_{24}\text{O}_{41}|$Pt hybrids|Aditya A. Wagh,Priyanka Garg,Kingshuk Mallick,Suja Elizabeth,P. S. Anil Kumar###
(1866914, 1866914)
Importantly, SMR experiments revealed that a change in the helicity with areversal of the magnetic field has no influence on the observed SMR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[332.0, 50, 'to', 6],[331.0, 100, 'kOe', 6],[222.0, 14, 'kOe', 3],[106.0, 2.5, 'kOe', 1],[30.0, 500, 'nV', 1],[64.0, 60, 'kOe', 1]

SS
###Highly tunable spin Hall magnetoresistance in room-temperature magnetoelectric multiferroic, $\text{Sr}_{3}\text{Co}_{2}\text{Fe}_{24}\text{O}_{41}|$Pt hybrids|Aditya A. Wagh,Priyanka Garg,Kingshuk Mallick,Suja Elizabeth,P. S. Anil Kumar###
(1866930, 1866931)
Longitudinal spin Seebeck effect (L<missing VAR>SSE) signal was measured to be 500 nV at 280K, under application of thermal gradient, Delta T<missing VAR>  23 K and field, 60 kOe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[348.0, 50, 'to', 7],[347.0, 100, 'kOe', 7],[238.0, 14, 'kOe', 4],[122.0, 2.5, 'kOe', 2],[13.0, 500, 'nV', 0],[47.0, 60, 'kOe', 0]

K
###Highly tunable spin Hall magnetoresistance in room-temperature magnetoelectric multiferroic, $\text{Sr}_{3}\text{Co}_{2}\text{Fe}_{24}\text{O}_{41}|$Pt hybrids|Aditya A. Wagh,Priyanka Garg,Kingshuk Mallick,Suja Elizabeth,P. S. Anil Kumar###
(1866951, 1866951)
Longitudinal spin Seebeck effect (L<missing VAR>SSE) signal was measured to be 500 nV at 280K, under application of thermal gradient, Delta T<missing VAR>  23 K and field, 60 kOe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[369.0, 50, 'to', 7],[368.0, 100, 'kOe', 7],[259.0, 14, 'kOe', 4],[143.0, 2.5, 'kOe', 2],[7.0, 500, 'nV', 0],[27.0, 60, 'kOe', 0]

K
###Highly tunable spin Hall magnetoresistance in room-temperature magnetoelectric multiferroic, $\text{Sr}_{3}\text{Co}_{2}\text{Fe}_{24}\text{O}_{41}|$Pt hybrids|Aditya A. Wagh,Priyanka Garg,Kingshuk Mallick,Suja Elizabeth,P. S. Anil Kumar###
(1866972, 1866972)
Longitudinal spin Seebeck effect (L<missing VAR>SSE) signal was measured to be 500 nV at 280K, under application of thermal gradient, Delta T<missing VAR>  23 K and field, 60 kOe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[390.0, 50, 'to', 7],[389.0, 100, 'kOe', 7],[280.0, 14, 'kOe', 4],[164.0, 2.5, 'kOe', 2],[28.0, 500, 'nV', 0],[6.0, 60, 'kOe', 0]

SS
###Highly tunable spin Hall magnetoresistance in room-temperature magnetoelectric multiferroic, $\text{Sr}_{3}\text{Co}_{2}\text{Fe}_{24}\text{O}_{41}|$Pt hybrids|Aditya A. Wagh,Priyanka Garg,Kingshuk Mallick,Suja Elizabeth,P. S. Anil Kumar###
(1866987, 1866988)
The observed L<missing VAR>SSE<missing VAR> signal, originating from pure magnon spin current, showed asimilar H-dependent behavior as that of the magnetization of SCFO.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[405.0, 50, 'to', 8],[404.0, 100, 'kOe', 8],[295.0, 14, 'kOe', 5],[179.0, 2.5, 'kOe', 3],[43.0, 500, 'nV', 1],[9.0, 60, 'kOe', 1]

H
###Highly tunable spin Hall magnetoresistance in room-temperature magnetoelectric multiferroic, $\text{Sr}_{3}\text{Co}_{2}\text{Fe}_{24}\text{O}_{41}|$Pt hybrids|Aditya A. Wagh,Priyanka Garg,Kingshuk Mallick,Suja Elizabeth,P. S. Anil Kumar###
(1867014, 1867014)
The observed L<missing VAR>SSE<missing VAR> signal, originating from pure magnon spin current, showed asimilar H-dependent behavior as that of the magnetization of SCFO.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[432.0, 50, 'to', 8],[431.0, 100, 'kOe', 8],[322.0, 14, 'kOe', 5],[206.0, 2.5, 'kOe', 3],[70.0, 500, 'nV', 1],[36.0, 60, 'kOe', 1]

SCFO
###Highly tunable spin Hall magnetoresistance in room-temperature magnetoelectric multiferroic, $\text{Sr}_{3}\text{Co}_{2}\text{Fe}_{24}\text{O}_{41}|$Pt hybrids|Aditya A. Wagh,Priyanka Garg,Kingshuk Mallick,Suja Elizabeth,P. S. Anil Kumar###
(1867032, 1867035)
The observed L<missing VAR>SSE<missing VAR> signal, originating from pure magnon spin current, showed asimilar H-dependent behavior as that of the magnetization of SCFO.
Featurization terminated normally.
0,0,0,0,0,0.25,0,0.25,0.25,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[450.0, 50, 'to', 8],[449.0, 100, 'kOe', 8],[340.0, 14, 'kOe', 5],[224.0, 2.5, 'kOe', 3],[88.0, 500, 'nV', 1],[54.0, 60, 'kOe', 1]

SCFOPt
###Highly tunable spin Hall magnetoresistance in room-temperature magnetoelectric multiferroic, $\text{Sr}_{3}\text{Co}_{2}\text{Fe}_{24}\text{O}_{41}|$Pt hybrids|Aditya A. Wagh,Priyanka Garg,Kingshuk Mallick,Suja Elizabeth,P. S. Anil Kumar###
(1867053, 1867057)
 Ourdetailed spin transport studies on polycrystalline SCFOPt heterostructuredemonstrate high tunability of the amplitude and the sign of the SMR,highlighting its potential for novel spintronic devices such as SMR-based spinvalves and voltage-controlled spin transport devices.
Featurization terminated normally.
0,0,0,0,0,0.2,0,0.2,0.2,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[471.0, 50, 'to', 9],[470.0, 100, 'kOe', 9],[361.0, 14, 'kOe', 6],[245.0, 2.5, 'kOe', 4],[109.0, 500, 'nV', 2],[75.0, 60, 'kOe', 2]

S
###Highly tunable spin Hall magnetoresistance in room-temperature magnetoelectric multiferroic, $\text{Sr}_{3}\text{Co}_{2}\text{Fe}_{24}\text{O}_{41}|$Pt hybrids|Aditya A. Wagh,Priyanka Garg,Kingshuk Mallick,Suja Elizabeth,P. S. Anil Kumar###
(1867084, 1867084)
 Ourdetailed spin transport studies on polycrystalline SCFOPt heterostructuredemonstrate high tunability of the amplitude and the sign of the SMR,highlighting its potential for novel spintronic devices such as SMR-based spinvalves and voltage-controlled spin transport devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[502.0, 50, 'to', 9],[501.0, 100, 'kOe', 9],[392.0, 14, 'kOe', 6],[276.0, 2.5, 'kOe', 4],[140.0, 500, 'nV', 2],[106.0, 60, 'kOe', 2]

S
###Highly tunable spin Hall magnetoresistance in room-temperature magnetoelectric multiferroic, $\text{Sr}_{3}\text{Co}_{2}\text{Fe}_{24}\text{O}_{41}|$Pt hybrids|Aditya A. Wagh,Priyanka Garg,Kingshuk Mallick,Suja Elizabeth,P. S. Anil Kumar###
(1867108, 1867108)
 Ourdetailed spin transport studies on polycrystalline SCFOPt heterostructuredemonstrate high tunability of the amplitude and the sign of the SMR,highlighting its potential for novel spintronic devices such as SMR-based spinvalves and voltage-controlled spin transport devices.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[526.0, 50, 'to', 9],[525.0, 100, 'kOe', 9],[416.0, 14, 'kOe', 6],[300.0, 2.5, 'kOe', 4],[164.0, 500, 'nV', 2],[130.0, 60, 'kOe', 2]

EuZnGe
###Anisotropic magnetotransport properties coupled with spiral spin modulation in a triangular-lattice magnet EuZnGe|Takashi Kurumaji,Masaki Gen,Shunsuke Kitou,Hajime Sagayama,Akihiko Ikeda,Taka-hisa Arima###
(1867166, 1867168)
Anisotropic magnetotransport properties coupled with spiral spin modulation in a triangular-lattice magnet EuZnGe.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[263.0, 0, ',', 5],[267.0, 0, ',', 5],[304.0, 0, ',', 5],[307.0, 0, ',', 5],[329.0, 0, ',', 5],[332.0, 0, ',', 5],[420.0, 10, 'over', 7],[466.0, 50, ',', 7],[528.0, 0.4, 'peak', 8],[550.0, 0.47, 'emerges', 8],[559.0, 0.5, 'modulation', 8]

EuZnGe
###Anisotropic magnetotransport properties coupled with spiral spin modulation in a triangular-lattice magnet EuZnGe|Takashi Kurumaji,Masaki Gen,Shunsuke Kitou,Hajime Sagayama,Akihiko Ikeda,Taka-hisa Arima###
(1867202, 1867204)
 We investigate the thermodynamic, magnetic, and electrical transportproperties of a triangular-lattice antiferromagnet EuZnGe using single crystalsgrown from Eu-Zn flux in sealed tantalum tubes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[227.0, 0, ',', 4],[231.0, 0, ',', 4],[268.0, 0, ',', 4],[271.0, 0, ',', 4],[293.0, 0, ',', 4],[296.0, 0, ',', 4],[384.0, 10, 'over', 6],[430.0, 50, ',', 6],[492.0, 0.4, 'peak', 7],[514.0, 0.47, 'emerges', 7],[523.0, 0.5, 'modulation', 7]

Eu
###Anisotropic magnetotransport properties coupled with spiral spin modulation in a triangular-lattice magnet EuZnGe|Takashi Kurumaji,Masaki Gen,Shunsuke Kitou,Hajime Sagayama,Akihiko Ikeda,Taka-hisa Arima###
(1867217, 1867217)
 We investigate the thermodynamic, magnetic, and electrical transportproperties of a triangular-lattice antiferromagnet EuZnGe using single crystalsgrown from Eu-Zn flux in sealed tantalum tubes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[214.0, 0, ',', 4],[218.0, 0, ',', 4],[255.0, 0, ',', 4],[258.0, 0, ',', 4],[280.0, 0, ',', 4],[283.0, 0, ',', 4],[371.0, 10, 'over', 6],[417.0, 50, ',', 6],[479.0, 0.4, 'peak', 7],[501.0, 0.47, 'emerges', 7],[510.0, 0.5, 'modulation', 7]

Zn
###Anisotropic magnetotransport properties coupled with spiral spin modulation in a triangular-lattice magnet EuZnGe|Takashi Kurumaji,Masaki Gen,Shunsuke Kitou,Hajime Sagayama,Akihiko Ikeda,Taka-hisa Arima###
(1867219, 1867219)
 We investigate the thermodynamic, magnetic, and electrical transportproperties of a triangular-lattice antiferromagnet EuZnGe using single crystalsgrown from Eu-Zn flux in sealed tantalum tubes.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[212.0, 0, ',', 4],[216.0, 0, ',', 4],[253.0, 0, ',', 4],[256.0, 0, ',', 4],[278.0, 0, ',', 4],[281.0, 0, ',', 4],[369.0, 10, 'over', 6],[415.0, 50, ',', 6],[477.0, 0.4, 'peak', 7],[499.0, 0.47, 'emerges', 7],[508.0, 0.5, 'modulation', 7]

K
###Anisotropic magnetotransport properties coupled with spiral spin modulation in a triangular-lattice magnet EuZnGe|Takashi Kurumaji,Masaki Gen,Shunsuke Kitou,Hajime Sagayama,Akihiko Ikeda,Taka-hisa Arima###
(1867288, 1867288)
 Magnetic properties are foundto be isotropic in the paramagnetic state while we observe an enhancement ofin-plane magnetic susceptibility at the temperature near T<missing VAR> 11.3 K, suggestingan easy-plane anisotropy at low temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 0, ',', 3],[147.0, 0, ',', 3],[184.0, 0, ',', 3],[187.0, 0, ',', 3],[209.0, 0, ',', 3],[212.0, 0, ',', 3],[300.0, 10, 'over', 5],[346.0, 50, ',', 5],[408.0, 0.4, 'peak', 6],[430.0, 0.47, 'emerges', 6],[439.0, 0.5, 'modulation', 6]

N
###Anisotropic magnetotransport properties coupled with spiral spin modulation in a triangular-lattice magnet EuZnGe|Takashi Kurumaji,Masaki Gen,Shunsuke Kitou,Hajime Sagayama,Akihiko Ikeda,Taka-hisa Arima###
(1867339, 1867339)
 Magnetic transition temperatureis lower than T<missing VAR> as specific heat shows a peak at T<missing VAR>N 7.6 K.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[92.0, 0, ',', 2],[96.0, 0, ',', 2],[133.0, 0, ',', 2],[136.0, 0, ',', 2],[158.0, 0, ',', 2],[161.0, 0, ',', 2],[249.0, 10, 'over', 4],[295.0, 50, ',', 4],[357.0, 0.4, 'peak', 5],[379.0, 0.47, 'emerges', 5],[388.0, 0.5, 'modulation', 5]

K
###Anisotropic magnetotransport properties coupled with spiral spin modulation in a triangular-lattice magnet EuZnGe|Takashi Kurumaji,Masaki Gen,Shunsuke Kitou,Hajime Sagayama,Akihiko Ikeda,Taka-hisa Arima###
(1867343, 1867343)
 Magnetic transition temperatureis lower than T<missing VAR> as specific heat shows a peak at T<missing VAR>N 7.6 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[88.0, 0, ',', 2],[92.0, 0, ',', 2],[129.0, 0, ',', 2],[132.0, 0, ',', 2],[154.0, 0, ',', 2],[157.0, 0, ',', 2],[245.0, 10, 'over', 4],[291.0, 50, ',', 4],[353.0, 0.4, 'peak', 5],[375.0, 0.47, 'emerges', 5],[384.0, 0.5, 'modulation', 5]

Eu
###Anisotropic magnetotransport properties coupled with spiral spin modulation in a triangular-lattice magnet EuZnGe|Takashi Kurumaji,Masaki Gen,Shunsuke Kitou,Hajime Sagayama,Akihiko Ikeda,Taka-hisa Arima###
(1867377, 1867377)
 We reveal themagnetic modulation along the c<missing VAR> axis by resonant x<missing VAR>-ray scattering at Eu L<missing VAR>2edge, which suggests competing magnetic interaction among Eu triangular-latticelayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[54.0, 0, ',', 1],[58.0, 0, ',', 1],[95.0, 0, ',', 1],[98.0, 0, ',', 1],[120.0, 0, ',', 1],[123.0, 0, ',', 1],[211.0, 10, 'over', 3],[257.0, 50, ',', 3],[319.0, 0.4, 'peak', 4],[341.0, 0.47, 'emerges', 4],[350.0, 0.5, 'modulation', 4]

Eu
###Anisotropic magnetotransport properties coupled with spiral spin modulation in a triangular-lattice magnet EuZnGe|Takashi Kurumaji,Masaki Gen,Shunsuke Kitou,Hajime Sagayama,Akihiko Ikeda,Taka-hisa Arima###
(1867398, 1867398)
 We reveal themagnetic modulation along the c<missing VAR> axis by resonant x<missing VAR>-ray scattering at Eu L<missing VAR>2edge, which suggests competing magnetic interaction among Eu triangular-latticelayers.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 0, ',', 1],[37.0, 0, ',', 1],[74.0, 0, ',', 1],[77.0, 0, ',', 1],[99.0, 0, ',', 1],[102.0, 0, ',', 1],[190.0, 10, 'over', 3],[236.0, 50, ',', 3],[298.0, 0.4, 'peak', 4],[320.0, 0.47, 'emerges', 4],[329.0, 0.5, 'modulation', 4]

N
###Anisotropic magnetotransport properties coupled with spiral spin modulation in a triangular-lattice magnet EuZnGe|Takashi Kurumaji,Masaki Gen,Shunsuke Kitou,Hajime Sagayama,Akihiko Ikeda,Taka-hisa Arima###
(1867444, 1867444)
 We observe a double-peak structure in the intensity profile along (0,0, L) below T<missing VAR>N, which is mainly composed of a dominant helical modulation withq<missing VAR>  (0, 0, 0.4) coexisting with a secondary contribution from q<missing VAR>  (0, 0, 0.5).
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 0, ',', 0],[9.0, 0, ',', 0],[28.0, 0, ',', 0],[31.0, 0, ',', 0],[53.0, 0, ',', 0],[56.0, 0, ',', 0],[144.0, 10, 'over', 2],[190.0, 50, ',', 2],[252.0, 0.4, 'peak', 3],[274.0, 0.47, 'emerges', 3],[283.0, 0.5, 'modulation', 3]

N
###Anisotropic magnetotransport properties coupled with spiral spin modulation in a triangular-lattice magnet EuZnGe|Takashi Kurumaji,Masaki Gen,Shunsuke Kitou,Hajime Sagayama,Akihiko Ikeda,Taka-hisa Arima###
(1867619, 1867619)
 The metallic conductivity is highly anisotropic with the ratiorhozz/rhoxx exceeding 10 over the entire temperature range and additionallyexhibits a sharp enhancement of rhozz at T<missing VAR>N giving rise to rhozz/rhoxx  50,suggesting a coupling between out-of-plane electron conduction and the spiralmagnetic modulations.
Featurization terminated normally.
0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[188.0, 0, ',', 2],[184.0, 0, ',', 2],[147.0, 0, ',', 2],[144.0, 0, ',', 2],[122.0, 0, ',', 2],[119.0, 0, ',', 2],[31.0, 10, 'over', 0],[15.0, 50, ',', 0],[77.0, 0.4, 'peak', 1],[99.0, 0.47, 'emerges', 1],[108.0, 0.5, 'modulation', 1]

In
###Anisotropic magnetotransport properties coupled with spiral spin modulation in a triangular-lattice magnet EuZnGe|Takashi Kurumaji,Masaki Gen,Shunsuke Kitou,Hajime Sagayama,Akihiko Ikeda,Taka-hisa Arima###
(1867668, 1867668)
 In-plane magnetic field induces a spin-flop liketransition, where the q<missing VAR>  0.4 peak disappears and an incommensurate peak ofapproximately q<missing VAR>ICM<missing VAR>  0.47 emerges, while the q<missing VAR>  0.5 modulation retains afinite intensity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[237.0, 0, ',', 3],[233.0, 0, ',', 3],[196.0, 0, ',', 3],[193.0, 0, ',', 3],[171.0, 0, ',', 3],[168.0, 0, ',', 3],[80.0, 10, 'over', 1],[34.0, 50, ',', 1],[28.0, 0.4, 'peak', 0],[50.0, 0.47, 'emerges', 0],[59.0, 0.5, 'modulation', 0]

IC
###Anisotropic magnetotransport properties coupled with spiral spin modulation in a triangular-lattice magnet EuZnGe|Takashi Kurumaji,Masaki Gen,Shunsuke Kitou,Hajime Sagayama,Akihiko Ikeda,Taka-hisa Arima###
(1867714, 1867715)
 In-plane magnetic field induces a spin-flop liketransition, where the q<missing VAR>  0.4 peak disappears and an incommensurate peak ofapproximately q<missing VAR>ICM<missing VAR>  0.47 emerges, while the q<missing VAR>  0.5 modulation retains afinite intensity.
Featurization terminated normally.
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[283.0, 0, ',', 3],[279.0, 0, ',', 3],[242.0, 0, ',', 3],[239.0, 0, ',', 3],[217.0, 0, ',', 3],[214.0, 0, ',', 3],[126.0, 10, 'over', 1],[80.0, 50, ',', 1],[18.0, 0.4, 'peak', 0],[3.0, 0.47, 'emerges', 0],[12.0, 0.5, 'modulation', 0]

Y
###Anisotropic magnetotransport properties coupled with spiral spin modulation in a triangular-lattice magnet EuZnGe|Takashi Kurumaji,Masaki Gen,Shunsuke Kitou,Hajime Sagayama,Akihiko Ikeda,Taka-hisa Arima###
(1867795, 1867795)
 This transition correlates with non-monotonicmagnetoresistance and Hall resistivity, suggesting a significant interplaybetween electrons and spin structures through Ruderman-Kittel-Kasuya-Yosida(R<missing VAR>KKY) interaction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[364.0, 0, ',', 4],[360.0, 0, ',', 4],[323.0, 0, ',', 4],[320.0, 0, ',', 4],[298.0, 0, ',', 4],[295.0, 0, ',', 4],[207.0, 10, 'over', 2],[161.0, 50, ',', 2],[99.0, 0.4, 'peak', 1],[77.0, 0.47, 'emerges', 1],[68.0, 0.5, 'modulation', 1]

Bi2O2Te
###Electron transport properties of a narrow-bandgap semiconductor Bi$_2$O$_2$Te nanosheet|Xiaobo Li,Haitian Su,H. Q. Xu###
(1867825, 1867829)
Electron transport properties of a narrow-bandgap semiconductor Bi2O2Te nanosheet.
Featurization terminated normally.
0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[438.0, 2, 'D', 7],[607.0, 2, 'D', 9]

Bi2O2Te
###Electron transport properties of a narrow-bandgap semiconductor Bi$_2$O$_2$Te nanosheet|Xiaobo Li,Haitian Su,H. Q. Xu###
(1867845, 1867849)
 A thin, narrow-bandgap semiconductor Bi2O2Te nanosheet is obtained viamechanical exfoliation and a Hall-bar device is fabricated from it on a heavilydoped Si/SiO2 substrate and studied at low temperatures.
Featurization terminated normally.
0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[418.0, 2, 'D', 6],[587.0, 2, 'D', 8]

Si/SiO2
###Electron transport properties of a narrow-bandgap semiconductor Bi$_2$O$_2$Te nanosheet|Xiaobo Li,Haitian Su,H. Q. Xu###
(1867891, 1867895)
 A thin, narrow-bandgap semiconductor Bi2O2Te nanosheet is obtained viamechanical exfoliation and a Hall-bar device is fabricated from it on a heavilydoped Si/SiO2 substrate and studied at low temperatures.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[372.0, 2, 'D', 6],[541.0, 2, 'D', 8]

W
###Electron transport properties of a narrow-bandgap semiconductor Bi$_2$O$_2$Te nanosheet|Xiaobo Li,Haitian Su,H. Q. Xu###
(1868093, 1868093)
 Magnetotransport measurements for the device atmagnetic fields applied perpendicular to the nanosheet plane show dominantlyweak antilocalization (WAL) characteristics at low fields and a linearmagnetoresistance (LMR) behavior at large fields.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[174.0, 2, 'D', 3],[343.0, 2, 'D', 5]

W
###Electron transport properties of a narrow-bandgap semiconductor Bi$_2$O$_2$Te nanosheet|Xiaobo Li,Haitian Su,H. Q. Xu###
(1868136, 1868136)
 We attribute the WAL<missing VAR>characteristics to strong spin-orbit interaction (SOI) and the LMR to theclassical origin of strong disorder in the nanosheet.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[131.0, 2, 'D', 2],[300.0, 2, 'D', 4]

(SOI)
###Electron transport properties of a narrow-bandgap semiconductor Bi$_2$O$_2$Te nanosheet|Xiaobo Li,Haitian Su,H. Q. Xu###
(1868153, 1868157)
 We attribute the WAL<missing VAR>characteristics to strong spin-orbit interaction (SOI) and the LMR to theclassical origin of strong disorder in the nanosheet.
Featurization successful!
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[110.0, 2, 'D', 2],[279.0, 2, 'D', 4]

Bi2O2Te
###Electron transport properties of a narrow-bandgap semiconductor Bi$_2$O$_2$Te nanosheet|Xiaobo Li,Haitian Su,H. Q. Xu###
(1868330, 1868334)
 It is found that the spin relaxationlength in the Bi2O2Te nanosheet is several times smaller than it in itscounterpart Bi2O2Se nanosheet and thus an ultra-strong SOI is present inthe Bi2O2Te nanosheet.
Featurization terminated normally.
0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[63.0, 2, 'D', 1],[102.0, 2, 'D', 1]

Bi2O2Se
###Electron transport properties of a narrow-bandgap semiconductor Bi$_2$O$_2$Te nanosheet|Xiaobo Li,Haitian Su,H. Q. Xu###
(1868357, 1868361)
 It is found that the spin relaxationlength in the Bi2O2Te nanosheet is several times smaller than it in itscounterpart Bi2O2Se nanosheet and thus an ultra-strong SOI is present inthe Bi2O2Te nanosheet.
Featurization terminated normally.
0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 2, 'D', 1],[75.0, 2, 'D', 1]

SOI
###Electron transport properties of a narrow-bandgap semiconductor Bi$_2$O$_2$Te nanosheet|Xiaobo Li,Haitian Su,H. Q. Xu###
(1868375, 1868377)
 It is found that the spin relaxationlength in the Bi2O2Te nanosheet is several times smaller than it in itscounterpart Bi2O2Se nanosheet and thus an ultra-strong SOI is present inthe Bi2O2Te nanosheet.
Featurization terminated normally.
0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[108.0, 2, 'D', 1],[59.0, 2, 'D', 1]

Bi2O2Te
###Electron transport properties of a narrow-bandgap semiconductor Bi$_2$O$_2$Te nanosheet|Xiaobo Li,Haitian Su,H. Q. Xu###
(1868388, 1868392)
 It is found that the spin relaxationlength in the Bi2O2Te nanosheet is several times smaller than it in itscounterpart Bi2O2Se nanosheet and thus an ultra-strong SOI is present inthe Bi2O2Te nanosheet.
Featurization terminated normally.
0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 2, 'D', 1],[44.0, 2, 'D', 1]

Ca3Ru2O7
###The magnetic structure and field dependence of the cycloid phase mediating the spin reorientation transition in Ca$_3$Ru$_2$O$_7$|Q. Faure,C. D. Dashwood,C. V. Colin,R. D. Johnson,E. Ressouche,G. B. G. Stenning,J. Spratt,D. F. McMorrow,R. S. Perry###
(1868481, 1868486)
The magnetic structure and field dependence of the cycloid phase mediating the spin reorientation transition in Ca3Ru2O7.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[165.0, 0, ',', 2],[253.0, 0, ',', 3],[457.0, 5, 'T', 6]

Ca3Ru2O7
###The magnetic structure and field dependence of the cycloid phase mediating the spin reorientation transition in Ca$_3$Ru$_2$O$_7$|Q. Faure,C. D. Dashwood,C. V. Colin,R. D. Johnson,E. Ressouche,G. B. G. Stenning,J. Spratt,D. F. McMorrow,R. S. Perry###
(1868520, 1868525)
 We report a comprehensive experimental investigation of the magneticstructure of the cycloidal phase in Ca3Ru2O7, which mediates the spinreorientation transition, and establishes its magnetic phase diagram.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[126.0, 0, ',', 1],[214.0, 0, ',', 2],[418.0, 5, 'T', 5]

In
###The magnetic structure and field dependence of the cycloid phase mediating the spin reorientation transition in Ca$_3$Ru$_2$O$_7$|Q. Faure,C. D. Dashwood,C. V. Colin,R. D. Johnson,E. Ressouche,G. B. G. Stenning,J. Spratt,D. F. McMorrow,R. S. Perry###
(1868555, 1868555)
 In zeroapplied field, single-crystal neutron diffraction data confirms the scenariodeduced from an earlier resonant x<missing VAR>-ray scattering study between 46.7K < T<missing VAR>< 49.0K the magnetic moments form a cycloid in the a-b<missing VAR> plane with apropagation wavevector of (delta,0,1) with delta simeq 0.025 and anordered moment of about 1 murmB, with the eccentricity of the cycloidevolving with temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 0, ',', 0],[184.0, 0, ',', 1],[388.0, 5, 'T', 4]

K
###The magnetic structure and field dependence of the cycloid phase mediating the spin reorientation transition in Ca$_3$Ru$_2$O$_7$|Q. Faure,C. D. Dashwood,C. V. Colin,R. D. Johnson,E. Ressouche,G. B. G. Stenning,J. Spratt,D. F. McMorrow,R. S. Perry###
(1868603, 1868603)
 In zeroapplied field, single-crystal neutron diffraction data confirms the scenariodeduced from an earlier resonant x<missing VAR>-ray scattering study between 46.7K < T<missing VAR>< 49.0K the magnetic moments form a cycloid in the a-b<missing VAR> plane with apropagation wavevector of (delta,0,1) with delta simeq 0.025 and anordered moment of about 1 murmB, with the eccentricity of the cycloidevolving with temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[48.0, 0, ',', 0],[136.0, 0, ',', 1],[340.0, 5, 'T', 4]

K
###The magnetic structure and field dependence of the cycloid phase mediating the spin reorientation transition in Ca$_3$Ru$_2$O$_7$|Q. Faure,C. D. Dashwood,C. V. Colin,R. D. Johnson,E. Ressouche,G. B. G. Stenning,J. Spratt,D. F. McMorrow,R. S. Perry###
(1868613, 1868613)
 In zeroapplied field, single-crystal neutron diffraction data confirms the scenariodeduced from an earlier resonant x<missing VAR>-ray scattering study between 46.7K < T<missing VAR>< 49.0K the magnetic moments form a cycloid in the a-b<missing VAR> plane with apropagation wavevector of (delta,0,1) with delta simeq 0.025 and anordered moment of about 1 murmB, with the eccentricity of the cycloidevolving with temperature.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[38.0, 0, ',', 0],[126.0, 0, ',', 1],[330.0, 5, 'T', 4]

B
###The magnetic structure and field dependence of the cycloid phase mediating the spin reorientation transition in Ca$_3$Ru$_2$O$_7$|Q. Faure,C. D. Dashwood,C. V. Colin,R. D. Johnson,E. Ressouche,G. B. G. Stenning,J. Spratt,D. F. McMorrow,R. S. Perry###
(1868681, 1868681)
 In zeroapplied field, single-crystal neutron diffraction data confirms the scenariodeduced from an earlier resonant x<missing VAR>-ray scattering study between 46.7K < T<missing VAR>< 49.0K the magnetic moments form a cycloid in the a-b<missing VAR> plane with apropagation wavevector of (delta,0,1) with delta simeq 0.025 and anordered moment of about 1 murmB, with the eccentricity of the cycloidevolving with temperature.
Featurization terminated normally.
0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[30.0, 0, ',', 0],[58.0, 0, ',', 1],[262.0, 5, 'T', 4]

In
###The magnetic structure and field dependence of the cycloid phase mediating the spin reorientation transition in Ca$_3$Ru$_2$O$_7$|Q. Faure,C. D. Dashwood,C. V. Colin,R. D. Johnson,E. Ressouche,G. B. G. Stenning,J. Spratt,D. F. McMorrow,R. S. Perry###
(1868704, 1868704)
 In an applied magnetic field applied parallel to theb<missing VAR>-axis, the intensity of the (delta,0,1) satellite peaks decreasescontinuously up to about mu0 H simeq 5 T<missing VAR>, above which field the systembecomes field polarised.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[53.0, 0, ',', 1],[35.0, 0, ',', 0],[239.0, 5, 'T', 3]

H
###The magnetic structure and field dependence of the cycloid phase mediating the spin reorientation transition in Ca$_3$Ru$_2$O$_7$|Q. Faure,C. D. Dashwood,C. V. Colin,R. D. Johnson,E. Ressouche,G. B. G. Stenning,J. Spratt,D. F. McMorrow,R. S. Perry###
(1868762, 1868762)
 In an applied magnetic field applied parallel to theb<missing VAR>-axis, the intensity of the (delta,0,1) satellite peaks decreasescontinuously up to about mu0 H simeq 5 T<missing VAR>, above which field the systembecomes field polarised.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[111.0, 0, ',', 1],[23.0, 0, ',', 0],[181.0, 5, 'T', 3]

K
###The magnetic structure and field dependence of the cycloid phase mediating the spin reorientation transition in Ca$_3$Ru$_2$O$_7$|Q. Faure,C. D. Dashwood,C. V. Colin,R. D. Johnson,E. Ressouche,G. B. G. Stenning,J. Spratt,D. F. McMorrow,R. S. Perry###
(1868966, 1868966)
 High-field magnetoresistance measurements show thatbelow T<missing VAR>simeq 70 K the resistivity increases continuously with decreasingtemperature, indicating the inherent insulating nature at low temperatures ofour high-quality, untwinned, single-crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[315.0, 0, ',', 5],[227.0, 0, ',', 4],[23.0, 5, 'T', 1]

Ca3Ru2O7
###The magnetic structure and field dependence of the cycloid phase mediating the spin reorientation transition in Ca$_3$Ru$_2$O$_7$|Q. Faure,C. D. Dashwood,C. V. Colin,R. D. Johnson,E. Ressouche,G. B. G. Stenning,J. Spratt,D. F. McMorrow,R. S. Perry###
(1869050, 1869055)
 We discuss our results withreference to previous reports of the magnetic phase diagram ofCa3Ru2O7 that utilised samples which were more metallic and/orpoly-domain.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5833333333333334,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.16666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[399.0, 0, ',', 6],[311.0, 0, ',', 5],[107.0, 5, 'T', 2]

Cr1
###High Temperature Ferromagnetism in Cr$_{1+x}$Pt$_{5-x}$P|Tyler J. Slade,Nao Furukawa,Tanner R. Smith,Juan Schmidt,Ranuri S. Dissanayaka Mudiyanselage,Lin-Lin Wang,Weiwei Xie,Sergey L. Budko,Paul C. Canfield###
(1869097, 1869098)
High Temperature Ferromagnetism in Cr1x<missing VAR>Pt5-xP.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[291.0, 464.5, 'K', 5],[315.0, 1.8, 'K', 5],[383.0, 345, 'kOe', 6],[386.0, 220, 'kOe', 6],[389.0, 1.8, 'K', 6]

Pt5-xP
###High Temperature Ferromagnetism in Cr$_{1+x}$Pt$_{5-x}$P|Tyler J. Slade,Nao Furukawa,Tanner R. Smith,Juan Schmidt,Ranuri S. Dissanayaka Mudiyanselage,Lin-Lin Wang,Weiwei Xie,Sergey L. Budko,Paul C. Canfield###
(1869100, 1869104)
High Temperature Ferromagnetism in Cr1x<missing VAR>Pt5-xP.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[285.0, 464.5, 'K', 5],[309.0, 1.8, 'K', 5],[377.0, 345, 'kOe', 6],[380.0, 220, 'kOe', 6],[383.0, 1.8, 'K', 6]

Cr1
###High Temperature Ferromagnetism in Cr$_{1+x}$Pt$_{5-x}$P|Tyler J. Slade,Nao Furukawa,Tanner R. Smith,Juan Schmidt,Ranuri S. Dissanayaka Mudiyanselage,Lin-Lin Wang,Weiwei Xie,Sergey L. Budko,Paul C. Canfield###
(1869130, 1869131)
 We present the growth and basic magnetic and transport properties ofCr1x<missing VAR>Pt5-xP.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[258.0, 464.5, 'K', 4],[282.0, 1.8, 'K', 4],[350.0, 345, 'kOe', 5],[353.0, 220, 'kOe', 5],[356.0, 1.8, 'K', 5]

Pt5-xP
###High Temperature Ferromagnetism in Cr$_{1+x}$Pt$_{5-x}$P|Tyler J. Slade,Nao Furukawa,Tanner R. Smith,Juan Schmidt,Ranuri S. Dissanayaka Mudiyanselage,Lin-Lin Wang,Weiwei Xie,Sergey L. Budko,Paul C. Canfield###
(1869133, 1869137)
 We present the growth and basic magnetic and transport properties ofCr1x<missing VAR>Pt5-xP.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[252.0, 464.5, 'K', 4],[276.0, 1.8, 'K', 4],[344.0, 345, 'kOe', 5],[347.0, 220, 'kOe', 5],[350.0, 1.8, 'K', 5]

Cr
###High Temperature Ferromagnetism in Cr$_{1+x}$Pt$_{5-x}$P|Tyler J. Slade,Nao Furukawa,Tanner R. Smith,Juan Schmidt,Ranuri S. Dissanayaka Mudiyanselage,Lin-Lin Wang,Weiwei Xie,Sergey L. Budko,Paul C. Canfield###
(1869181, 1869181)
 We show that single crystals can readily be grown from ahigh-temperature solution created by adding dilute quantities of Cr to Pt-Pbased melts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[208.0, 464.5, 'K', 3],[232.0, 1.8, 'K', 3],[300.0, 345, 'kOe', 4],[303.0, 220, 'kOe', 4],[306.0, 1.8, 'K', 4]

Pt
###High Temperature Ferromagnetism in Cr$_{1+x}$Pt$_{5-x}$P|Tyler J. Slade,Nao Furukawa,Tanner R. Smith,Juan Schmidt,Ranuri S. Dissanayaka Mudiyanselage,Lin-Lin Wang,Weiwei Xie,Sergey L. Budko,Paul C. Canfield###
(1869185, 1869185)
 We show that single crystals can readily be grown from ahigh-temperature solution created by adding dilute quantities of Cr to Pt-Pbased melts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[204.0, 464.5, 'K', 3],[228.0, 1.8, 'K', 3],[296.0, 345, 'kOe', 4],[299.0, 220, 'kOe', 4],[302.0, 1.8, 'K', 4]

P
###High Temperature Ferromagnetism in Cr$_{1+x}$Pt$_{5-x}$P|Tyler J. Slade,Nao Furukawa,Tanner R. Smith,Juan Schmidt,Ranuri S. Dissanayaka Mudiyanselage,Lin-Lin Wang,Weiwei Xie,Sergey L. Budko,Paul C. Canfield###
(1869187, 1869187)
 We show that single crystals can readily be grown from ahigh-temperature solution created by adding dilute quantities of Cr to Pt-Pbased melts.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[202.0, 464.5, 'K', 3],[226.0, 1.8, 'K', 3],[294.0, 345, 'kOe', 4],[297.0, 220, 'kOe', 4],[300.0, 1.8, 'K', 4]

Cr1
###High Temperature Ferromagnetism in Cr$_{1+x}$Pt$_{5-x}$P|Tyler J. Slade,Nao Furukawa,Tanner R. Smith,Juan Schmidt,Ranuri S. Dissanayaka Mudiyanselage,Lin-Lin Wang,Weiwei Xie,Sergey L. Budko,Paul C. Canfield###
(1869208, 1869209)
 Like other 1-5-1 compounds, Cr1x<missing VAR>Pt5-xP adopts atetragonal P4/mmm structure composed face-sharing CrPt3 like slabs that arebroken up along the c<missing VAR>-axis by sheets of P atoms.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[180.0, 464.5, 'K', 2],[204.0, 1.8, 'K', 2],[272.0, 345, 'kOe', 3],[275.0, 220, 'kOe', 3],[278.0, 1.8, 'K', 3]

Pt5-xP
###High Temperature Ferromagnetism in Cr$_{1+x}$Pt$_{5-x}$P|Tyler J. Slade,Nao Furukawa,Tanner R. Smith,Juan Schmidt,Ranuri S. Dissanayaka Mudiyanselage,Lin-Lin Wang,Weiwei Xie,Sergey L. Budko,Paul C. Canfield###
(1869211, 1869215)
 Like other 1-5-1 compounds, Cr1x<missing VAR>Pt5-xP adopts atetragonal P4/mmm structure composed face-sharing CrPt3 like slabs that arebroken up along the c<missing VAR>-axis by sheets of P atoms.
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[174.0, 464.5, 'K', 2],[198.0, 1.8, 'K', 2],[266.0, 345, 'kOe', 3],[269.0, 220, 'kOe', 3],[272.0, 1.8, 'K', 3]

P4
###High Temperature Ferromagnetism in Cr$_{1+x}$Pt$_{5-x}$P|Tyler J. Slade,Nao Furukawa,Tanner R. Smith,Juan Schmidt,Ranuri S. Dissanayaka Mudiyanselage,Lin-Lin Wang,Weiwei Xie,Sergey L. Budko,Paul C. Canfield###
(1869224, 1869225)
 Like other 1-5-1 compounds, Cr1x<missing VAR>Pt5-xP adopts atetragonal P4/mmm structure composed face-sharing CrPt3 like slabs that arebroken up along the c<missing VAR>-axis by sheets of P atoms.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[164.0, 464.5, 'K', 2],[188.0, 1.8, 'K', 2],[256.0, 345, 'kOe', 3],[259.0, 220, 'kOe', 3],[262.0, 1.8, 'K', 3]

CrPt3
###High Temperature Ferromagnetism in Cr$_{1+x}$Pt$_{5-x}$P|Tyler J. Slade,Nao Furukawa,Tanner R. Smith,Juan Schmidt,Ranuri S. Dissanayaka Mudiyanselage,Lin-Lin Wang,Weiwei Xie,Sergey L. Budko,Paul C. Canfield###
(1869237, 1869239)
 Like other 1-5-1 compounds, Cr1x<missing VAR>Pt5-xP adopts atetragonal P4/mmm structure composed face-sharing CrPt3 like slabs that arebroken up along the c<missing VAR>-axis by sheets of P atoms.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 464.5, 'K', 2],[174.0, 1.8, 'K', 2],[242.0, 345, 'kOe', 3],[245.0, 220, 'kOe', 3],[248.0, 1.8, 'K', 3]

P
###High Temperature Ferromagnetism in Cr$_{1+x}$Pt$_{5-x}$P|Tyler J. Slade,Nao Furukawa,Tanner R. Smith,Juan Schmidt,Ranuri S. Dissanayaka Mudiyanselage,Lin-Lin Wang,Weiwei Xie,Sergey L. Budko,Paul C. Canfield###
(1869268, 1869268)
 Like other 1-5-1 compounds, Cr1x<missing VAR>Pt5-xP adopts atetragonal P4/mmm structure composed face-sharing CrPt3 like slabs that arebroken up along the c<missing VAR>-axis by sheets of P atoms.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[121.0, 464.5, 'K', 2],[145.0, 1.8, 'K', 2],[213.0, 345, 'kOe', 3],[216.0, 220, 'kOe', 3],[219.0, 1.8, 'K', 3]

S
###High Temperature Ferromagnetism in Cr$_{1+x}$Pt$_{5-x}$P|Tyler J. Slade,Nao Furukawa,Tanner R. Smith,Juan Schmidt,Ranuri S. Dissanayaka Mudiyanselage,Lin-Lin Wang,Weiwei Xie,Sergey L. Budko,Paul C. Canfield###
(1869275, 1869275)
 EDS and X<missing VAR>-ray diffractionmeasurements both suggest Cr1x<missing VAR>Pt5-xP has mixed occupancy between Crand Pt atoms, similar to what is found in the closely related compoundCrPt3, giving real compositions of Cr1.5Pt4.5P (x<missing VAR>  0.5).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[114.0, 464.5, 'K', 1],[138.0, 1.8, 'K', 1],[206.0, 345, 'kOe', 2],[209.0, 220, 'kOe', 2],[212.0, 1.8, 'K', 2]

Cr1
###High Temperature Ferromagnetism in Cr$_{1+x}$Pt$_{5-x}$P|Tyler J. Slade,Nao Furukawa,Tanner R. Smith,Juan Schmidt,Ranuri S. Dissanayaka Mudiyanselage,Lin-Lin Wang,Weiwei Xie,Sergey L. Budko,Paul C. Canfield###
(1869292, 1869293)
 EDS and X<missing VAR>-ray diffractionmeasurements both suggest Cr1x<missing VAR>Pt5-xP has mixed occupancy between Crand Pt atoms, similar to what is found in the closely related compoundCrPt3, giving real compositions of Cr1.5Pt4.5P (x<missing VAR>  0.5).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[96.0, 464.5, 'K', 1],[120.0, 1.8, 'K', 1],[188.0, 345, 'kOe', 2],[191.0, 220, 'kOe', 2],[194.0, 1.8, 'K', 2]

Pt5-xP
###High Temperature Ferromagnetism in Cr$_{1+x}$Pt$_{5-x}$P|Tyler J. Slade,Nao Furukawa,Tanner R. Smith,Juan Schmidt,Ranuri S. Dissanayaka Mudiyanselage,Lin-Lin Wang,Weiwei Xie,Sergey L. Budko,Paul C. Canfield###
(1869295, 1869299)
 EDS and X<missing VAR>-ray diffractionmeasurements both suggest Cr1x<missing VAR>Pt5-xP has mixed occupancy between Crand Pt atoms, similar to what is found in the closely related compoundCrPt3, giving real compositions of Cr1.5Pt4.5P (x<missing VAR>  0.5).
EXCEPTION 2: Chemical formula with variable stoichiometry! Not automatically featurizeable! Manual action necessary!
-
[90.0, 464.5, 'K', 1],[114.0, 1.8, 'K', 1],[182.0, 345, 'kOe', 2],[185.0, 220, 'kOe', 2],[188.0, 1.8, 'K', 2]

Cr
###High Temperature Ferromagnetism in Cr$_{1+x}$Pt$_{5-x}$P|Tyler J. Slade,Nao Furukawa,Tanner R. Smith,Juan Schmidt,Ranuri S. Dissanayaka Mudiyanselage,Lin-Lin Wang,Weiwei Xie,Sergey L. Budko,Paul C. Canfield###
(1869309, 1869309)
 EDS and X<missing VAR>-ray diffractionmeasurements both suggest Cr1x<missing VAR>Pt5-xP has mixed occupancy between Crand Pt atoms, similar to what is found in the closely related compoundCrPt3, giving real compositions of Cr1.5Pt4.5P (x<missing VAR>  0.5).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[80.0, 464.5, 'K', 1],[104.0, 1.8, 'K', 1],[172.0, 345, 'kOe', 2],[175.0, 220, 'kOe', 2],[178.0, 1.8, 'K', 2]

Pt
###High Temperature Ferromagnetism in Cr$_{1+x}$Pt$_{5-x}$P|Tyler J. Slade,Nao Furukawa,Tanner R. Smith,Juan Schmidt,Ranuri S. Dissanayaka Mudiyanselage,Lin-Lin Wang,Weiwei Xie,Sergey L. Budko,Paul C. Canfield###
(1869314, 1869314)
 EDS and X<missing VAR>-ray diffractionmeasurements both suggest Cr1x<missing VAR>Pt5-xP has mixed occupancy between Crand Pt atoms, similar to what is found in the closely related compoundCrPt3, giving real compositions of Cr1.5Pt4.5P (x<missing VAR>  0.5).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[75.0, 464.5, 'K', 1],[99.0, 1.8, 'K', 1],[167.0, 345, 'kOe', 2],[170.0, 220, 'kOe', 2],[173.0, 1.8, 'K', 2]

CrPt3
###High Temperature Ferromagnetism in Cr$_{1+x}$Pt$_{5-x}$P|Tyler J. Slade,Nao Furukawa,Tanner R. Smith,Juan Schmidt,Ranuri S. Dissanayaka Mudiyanselage,Lin-Lin Wang,Weiwei Xie,Sergey L. Budko,Paul C. Canfield###
(1869340, 1869342)
 EDS and X<missing VAR>-ray diffractionmeasurements both suggest Cr1x<missing VAR>Pt5-xP has mixed occupancy between Crand Pt atoms, similar to what is found in the closely related compoundCrPt3, giving real compositions of Cr1.5Pt4.5P (x<missing VAR>  0.5).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[47.0, 464.5, 'K', 1],[71.0, 1.8, 'K', 1],[139.0, 345, 'kOe', 2],[142.0, 220, 'kOe', 2],[145.0, 1.8, 'K', 2]

Cr1.5Pt4.5P
###High Temperature Ferromagnetism in Cr$_{1+x}$Pt$_{5-x}$P|Tyler J. Slade,Nao Furukawa,Tanner R. Smith,Juan Schmidt,Ranuri S. Dissanayaka Mudiyanselage,Lin-Lin Wang,Weiwei Xie,Sergey L. Budko,Paul C. Canfield###
(1869353, 1869357)
 EDS and X<missing VAR>-ray diffractionmeasurements both suggest Cr1x<missing VAR>Pt5-xP has mixed occupancy between Crand Pt atoms, similar to what is found in the closely related compoundCrPt3, giving real compositions of Cr1.5Pt4.5P (x<missing VAR>  0.5).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0.21428571428571427,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6428571428571429,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[32.0, 464.5, 'K', 1],[56.0, 1.8, 'K', 1],[124.0, 345, 'kOe', 2],[127.0, 220, 'kOe', 2],[130.0, 1.8, 'K', 2]

Cr1.5Pt4.5P
###High Temperature Ferromagnetism in Cr$_{1+x}$Pt$_{5-x}$P|Tyler J. Slade,Nao Furukawa,Tanner R. Smith,Juan Schmidt,Ranuri S. Dissanayaka Mudiyanselage,Lin-Lin Wang,Weiwei Xie,Sergey L. Budko,Paul C. Canfield###
(1869374, 1869378)
 Wereport that Cr1.5Pt4.5P orders ferromagnetically at T<missing VAR>C  464.5 Kwith a saturated moment of approx 2.1 mutextitB/Cr at 1.8 K.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0.21428571428571427,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6428571428571429,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[11.0, 464.5, 'K', 0],[35.0, 1.8, 'K', 0],[103.0, 345, 'kOe', 1],[106.0, 220, 'kOe', 1],[109.0, 1.8, 'K', 1]

C
###High Temperature Ferromagnetism in Cr$_{1+x}$Pt$_{5-x}$P|Tyler J. Slade,Nao Furukawa,Tanner R. Smith,Juan Schmidt,Ranuri S. Dissanayaka Mudiyanselage,Lin-Lin Wang,Weiwei Xie,Sergey L. Budko,Paul C. Canfield###
(1869387, 1869387)
 Wereport that Cr1.5Pt4.5P orders ferromagnetically at T<missing VAR>C  464.5 Kwith a saturated moment of approx 2.1 mutextitB/Cr at 1.8 K.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[2.0, 464.5, 'K', 0],[26.0, 1.8, 'K', 0],[94.0, 345, 'kOe', 1],[97.0, 220, 'kOe', 1],[100.0, 1.8, 'K', 1]

B/Cr
###High Temperature Ferromagnetism in Cr$_{1+x}$Pt$_{5-x}$P|Tyler J. Slade,Nao Furukawa,Tanner R. Smith,Juan Schmidt,Ranuri S. Dissanayaka Mudiyanselage,Lin-Lin Wang,Weiwei Xie,Sergey L. Budko,Paul C. Canfield###
(1869408, 1869410)
 Wereport that Cr1.5Pt4.5P orders ferromagnetically at T<missing VAR>C  464.5 Kwith a saturated moment of approx 2.1 mutextitB/Cr at 1.8 K.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[19.0, 464.5, 'K', 0],[3.0, 1.8, 'K', 0],[71.0, 345, 'kOe', 1],[74.0, 220, 'kOe', 1],[77.0, 1.8, 'K', 1]

Pt
###High Temperature Ferromagnetism in Cr$_{1+x}$Pt$_{5-x}$P|Tyler J. Slade,Nao Furukawa,Tanner R. Smith,Juan Schmidt,Ranuri S. Dissanayaka Mudiyanselage,Lin-Lin Wang,Weiwei Xie,Sergey L. Budko,Paul C. Canfield###
(1869450, 1869450)
 Likelyowing to the strong spin-orbit coupling associated with the large quantity ofhigh Z<missing VAR> Pt atoms, Cr1.5Pt4.5P has exceptionally strong planaranisotropy with estimated anisotropy fields of 345 kOe and 220 kOe at 1.8 K and300 K respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 464.5, 'K', 1],[37.0, 1.8, 'K', 1],[31.0, 345, 'kOe', 0],[34.0, 220, 'kOe', 0],[37.0, 1.8, 'K', 0]

Cr1.5Pt4.5P
###High Temperature Ferromagnetism in Cr$_{1+x}$Pt$_{5-x}$P|Tyler J. Slade,Nao Furukawa,Tanner R. Smith,Juan Schmidt,Ranuri S. Dissanayaka Mudiyanselage,Lin-Lin Wang,Weiwei Xie,Sergey L. Budko,Paul C. Canfield###
(1869455, 1869459)
 Likelyowing to the strong spin-orbit coupling associated with the large quantity ofhigh Z<missing VAR> Pt atoms, Cr1.5Pt4.5P has exceptionally strong planaranisotropy with estimated anisotropy fields of 345 kOe and 220 kOe at 1.8 K and300 K respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0.21428571428571427,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6428571428571429,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 464.5, 'K', 1],[42.0, 1.8, 'K', 1],[22.0, 345, 'kOe', 0],[25.0, 220, 'kOe', 0],[28.0, 1.8, 'K', 0]

K
###High Temperature Ferromagnetism in Cr$_{1+x}$Pt$_{5-x}$P|Tyler J. Slade,Nao Furukawa,Tanner R. Smith,Juan Schmidt,Ranuri S. Dissanayaka Mudiyanselage,Lin-Lin Wang,Weiwei Xie,Sergey L. Budko,Paul C. Canfield###
(1869494, 1869494)
 Likelyowing to the strong spin-orbit coupling associated with the large quantity ofhigh Z<missing VAR> Pt atoms, Cr1.5Pt4.5P has exceptionally strong planaranisotropy with estimated anisotropy fields of 345 kOe and 220 kOe at 1.8 K and300 K respectively.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 464.5, 'K', 1],[81.0, 1.8, 'K', 1],[13.0, 345, 'kOe', 0],[10.0, 220, 'kOe', 0],[7.0, 1.8, 'K', 0]

Cr1.5Pt4.5P
###High Temperature Ferromagnetism in Cr$_{1+x}$Pt$_{5-x}$P|Tyler J. Slade,Nao Furukawa,Tanner R. Smith,Juan Schmidt,Ranuri S. Dissanayaka Mudiyanselage,Lin-Lin Wang,Weiwei Xie,Sergey L. Budko,Paul C. Canfield###
(1869505, 1869509)
 The resistance of Cr1.5Pt4.5P has a metallictemperature dependence with relatively weak magnetoresistance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0.21428571428571427,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6428571428571429,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[116.0, 464.5, 'K', 2],[92.0, 1.8, 'K', 2],[24.0, 345, 'kOe', 1],[21.0, 220, 'kOe', 1],[18.0, 1.8, 'K', 1]

CrPt5P
###High Temperature Ferromagnetism in Cr$_{1+x}$Pt$_{5-x}$P|Tyler J. Slade,Nao Furukawa,Tanner R. Smith,Juan Schmidt,Ranuri S. Dissanayaka Mudiyanselage,Lin-Lin Wang,Weiwei Xie,Sergey L. Budko,Paul C. Canfield###
(1869544, 1869547)
 Electronic bandstructure calculations show that CrPt5P has a large peak in the density ofstates near the Fermi level which is split into spin majority and minoritybands in the ferromagnetic state.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.7142857142857143,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[155.0, 464.5, 'K', 3],[131.0, 1.8, 'K', 3],[63.0, 345, 'kOe', 2],[60.0, 220, 'kOe', 2],[57.0, 1.8, 'K', 2]

Cr
###High Temperature Ferromagnetism in Cr$_{1+x}$Pt$_{5-x}$P|Tyler J. Slade,Nao Furukawa,Tanner R. Smith,Juan Schmidt,Ranuri S. Dissanayaka Mudiyanselage,Lin-Lin Wang,Weiwei Xie,Sergey L. Budko,Paul C. Canfield###
(1869620, 1869620)
 Furthermore, the calculations suggestsubstantial hybridization between Cr-3d<missing VAR> and Pt-5d<missing VAR> states near the Fermi level,in agreement with the experimentally measured anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[231.0, 464.5, 'K', 4],[207.0, 1.8, 'K', 4],[139.0, 345, 'kOe', 3],[136.0, 220, 'kOe', 3],[133.0, 1.8, 'K', 3]

Pt
###High Temperature Ferromagnetism in Cr$_{1+x}$Pt$_{5-x}$P|Tyler J. Slade,Nao Furukawa,Tanner R. Smith,Juan Schmidt,Ranuri S. Dissanayaka Mudiyanselage,Lin-Lin Wang,Weiwei Xie,Sergey L. Budko,Paul C. Canfield###
(1869627, 1869627)
 Furthermore, the calculations suggestsubstantial hybridization between Cr-3d<missing VAR> and Pt-5d<missing VAR> states near the Fermi level,in agreement with the experimentally measured anisotropy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[238.0, 464.5, 'K', 4],[214.0, 1.8, 'K', 4],[146.0, 345, 'kOe', 3],[143.0, 220, 'kOe', 3],[140.0, 1.8, 'K', 3]

Mn3Si2Te6
###Electronic structure, magnetic properties, spin orientation, and doping effect in Mn$_3$Si$_2$Te$_6$|Yang Zhang,Ling-Fang Lin,Adriana Moreo,Elbio Dagotto###
(1869690, 1869695)
Electronic structure, magnetic properties, spin orientation, and doping effect in Mn3Si2Te6.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0.2727272727272727,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5454545454545454,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn3Si2Te6
###Electronic structure, magnetic properties, spin orientation, and doping effect in Mn$_3$Si$_2$Te$_6$|Yang Zhang,Ling-Fang Lin,Adriana Moreo,Elbio Dagotto###
(1869704, 1869709)
 The layered material Mn3Si2Te6, with alternating stacking honeycomband triangular layers, is attracting considerable attention due to its richphysical properties.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0.2727272727272727,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5454545454545454,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Electronic structure, magnetic properties, spin orientation, and doping effect in Mn$_3$Si$_2$Te$_6$|Yang Zhang,Ling-Fang Lin,Adriana Moreo,Elbio Dagotto###
(1869772, 1869772)
 Here, using density functional theory and classical MonteCarlo (M<missing VAR>C) methods, we systematically study this system.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Te
###Electronic structure, magnetic properties, spin orientation, and doping effect in Mn$_3$Si$_2$Te$_6$|Yang Zhang,Ling-Fang Lin,Adriana Moreo,Elbio Dagotto###
(1869811, 1869811)
 Near the Fermi level,the states are mainly contributed by Te 5p<missing VAR> orbitals hybridized with Mn 3d<missing VAR>orbitals, resembling a charge transfer system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Electronic structure, magnetic properties, spin orientation, and doping effect in Mn$_3$Si$_2$Te$_6$|Yang Zhang,Ling-Fang Lin,Adriana Moreo,Elbio Dagotto###
(1869822, 1869822)
 Near the Fermi level,the states are mainly contributed by Te 5p<missing VAR> orbitals hybridized with Mn 3d<missing VAR>orbitals, resembling a charge transfer system.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Electronic structure, magnetic properties, spin orientation, and doping effect in Mn$_3$Si$_2$Te$_6$|Yang Zhang,Ling-Fang Lin,Adriana Moreo,Elbio Dagotto###
(1869954, 1869954)
 The energy difference between the FiM<missing VAR> [110]insulating and FiM<missing VAR> [001] metallic phases is very small( sim 0.71 meV/Mn).
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Electronic structure, magnetic properties, spin orientation, and doping effect in Mn$_3$Si$_2$Te$_6$|Yang Zhang,Ling-Fang Lin,Adriana Moreo,Elbio Dagotto###
(1870058, 1870058)
 In addition, wealso constructed the magnetic phase diagram using the classical X<missing VAR>Y spin modelstudied with the M<missing VAR>C method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Y
###Electronic structure, magnetic properties, spin orientation, and doping effect in Mn$_3$Si$_2$Te$_6$|Yang Zhang,Ling-Fang Lin,Adriana Moreo,Elbio Dagotto###
(1870085, 1870085)
 In addition, wealso constructed the magnetic phase diagram using the classical X<missing VAR>Y spin modelstudied with the M<missing VAR>C method.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Electronic structure, magnetic properties, spin orientation, and doping effect in Mn$_3$Si$_2$Te$_6$|Yang Zhang,Ling-Fang Lin,Adriana Moreo,Elbio Dagotto###
(1870099, 1870099)
 In addition, wealso constructed the magnetic phase diagram using the classical X<missing VAR>Y spin modelstudied with the M<missing VAR>C method.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Se
###Electronic structure, magnetic properties, spin orientation, and doping effect in Mn$_3$Si$_2$Te$_6$|Yang Zhang,Ling-Fang Lin,Adriana Moreo,Elbio Dagotto###
(1870149, 1870149)
 Moreover,we also investigated the Se- and Ge- doping into the Mn3Si2Te6 systemthe FiM<missing VAR> state has the lowest energy among the magnetic candidates for both Se-or Ge- doped cases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ge
###Electronic structure, magnetic properties, spin orientation, and doping effect in Mn$_3$Si$_2$Te$_6$|Yang Zhang,Ling-Fang Lin,Adriana Moreo,Elbio Dagotto###
(1870154, 1870154)
 Moreover,we also investigated the Se- and Ge- doping into the Mn3Si2Te6 systemthe FiM<missing VAR> state has the lowest energy among the magnetic candidates for both Se-or Ge- doped cases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn3Si2Te6
###Electronic structure, magnetic properties, spin orientation, and doping effect in Mn$_3$Si$_2$Te$_6$|Yang Zhang,Ling-Fang Lin,Adriana Moreo,Elbio Dagotto###
(1870163, 1870168)
 Moreover,we also investigated the Se- and Ge- doping into the Mn3Si2Te6 systemthe FiM<missing VAR> state has the lowest energy among the magnetic candidates for both Se-or Ge- doped cases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0.18181818181818182,0,0,0,0,0,0,0,0,0,0,0.2727272727272727,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5454545454545454,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Se
###Electronic structure, magnetic properties, spin orientation, and doping effect in Mn$_3$Si$_2$Te$_6$|Yang Zhang,Ling-Fang Lin,Adriana Moreo,Elbio Dagotto###
(1870200, 1870200)
 Moreover,we also investigated the Se- and Ge- doping into the Mn3Si2Te6 systemthe FiM<missing VAR> state has the lowest energy among the magnetic candidates for both Se-or Ge- doped cases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Ge
###Electronic structure, magnetic properties, spin orientation, and doping effect in Mn$_3$Si$_2$Te$_6$|Yang Zhang,Ling-Fang Lin,Adriana Moreo,Elbio Dagotto###
(1870206, 1870206)
 Moreover,we also investigated the Se- and Ge- doping into the Mn3Si2Te6 systemthe FiM<missing VAR> state has the lowest energy among the magnetic candidates for both Se-or Ge- doped cases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Se
###Electronic structure, magnetic properties, spin orientation, and doping effect in Mn$_3$Si$_2$Te$_6$|Yang Zhang,Ling-Fang Lin,Adriana Moreo,Elbio Dagotto###
(1870235, 1870235)
 The magnetic anisotropy energy (MAE) decreases in theSe-doped case because the Mn orbital moment is reduced as the doping x<missing VAR>increases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn
###Electronic structure, magnetic properties, spin orientation, and doping effect in Mn$_3$Si$_2$Te$_6$|Yang Zhang,Ling-Fang Lin,Adriana Moreo,Elbio Dagotto###
(1870245, 1870245)
 The magnetic anisotropy energy (MAE) decreases in theSe-doped case because the Mn orbital moment is reduced as the doping x<missing VAR>increases.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Se
###Electronic structure, magnetic properties, spin orientation, and doping effect in Mn$_3$Si$_2$Te$_6$|Yang Zhang,Ling-Fang Lin,Adriana Moreo,Elbio Dagotto###
(1870285, 1870285)
 Due to the small spin-orbital coupling effect of Se, theinsulator-metal transition caused by the spin orientation disappears in theSe-doped case, resulting in an insulating phase in the FiM<missing VAR> [001] phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Se
###Electronic structure, magnetic properties, spin orientation, and doping effect in Mn$_3$Si$_2$Te$_6$|Yang Zhang,Ling-Fang Lin,Adriana Moreo,Elbio Dagotto###
(1870314, 1870314)
 Due to the small spin-orbital coupling effect of Se, theinsulator-metal transition caused by the spin orientation disappears in theSe-doped case, resulting in an insulating phase in the FiM<missing VAR> [001] phase.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

GdPd2Bi
###Two-band conduction as a pathway to non-linear Hall effect and unsaturated negative magnetoresistance in the martensitic compound GdPd2Bi|Snehashish Chatterjee,Saurav Giri,Subham Majumdar,Prabir Dutta,Surasree Sadhukhan,Sudipta Kanungo,Souvik Chatterjee,Manju Mishra Patidar,Gunadhor Singh Okram,V. Ganesan,G. Das,V. Rajaji###
(1870408, 1870411)
Two-band conduction as a pathway to non-linear Hall effect and unsaturated negative magnetoresistance in the martensitic compound GdPd2Bi.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[358.0, 2, ',', 6],[425.0, 150, 'kOe', 7],[455.0, 30, 'K', 8]

GdPd2Bi
###Two-band conduction as a pathway to non-linear Hall effect and unsaturated negative magnetoresistance in the martensitic compound GdPd2Bi|Snehashish Chatterjee,Saurav Giri,Subham Majumdar,Prabir Dutta,Surasree Sadhukhan,Sudipta Kanungo,Souvik Chatterjee,Manju Mishra Patidar,Gunadhor Singh Okram,V. Ganesan,G. Das,V. Rajaji###
(1870445, 1870448)
 The present work aims to address the electronic and magnetic properties ofthe intermetallic compound GdPd2Bi through a comprehensive study of thestructural, magnetic, electrical and thermal transport on a polycrystallinesample, followed by theoretical calculations.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[321.0, 2, ',', 5],[388.0, 150, 'kOe', 6],[418.0, 30, 'K', 7]

H
###Two-band conduction as a pathway to non-linear Hall effect and unsaturated negative magnetoresistance in the martensitic compound GdPd2Bi|Snehashish Chatterjee,Saurav Giri,Subham Majumdar,Prabir Dutta,Surasree Sadhukhan,Sudipta Kanungo,Souvik Chatterjee,Manju Mishra Patidar,Gunadhor Singh Okram,V. Ganesan,G. Das,V. Rajaji###
(1870616, 1870616)
 Temperature dependent powder x<missing VAR>-raydiffraction measurements confirm martensitic transition from thehigh-temperature (HT) cubic Heusler L<missing VAR>21 structure to the low-temperature(LT) orthorhombic Pmma structure similar to many previously reported shapememory alloys.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[153.0, 2, ',', 2],[220.0, 150, 'kOe', 3],[250.0, 30, 'K', 4]

H
###Two-band conduction as a pathway to non-linear Hall effect and unsaturated negative magnetoresistance in the martensitic compound GdPd2Bi|Snehashish Chatterjee,Saurav Giri,Subham Majumdar,Prabir Dutta,Surasree Sadhukhan,Sudipta Kanungo,Souvik Chatterjee,Manju Mishra Patidar,Gunadhor Singh Okram,V. Ganesan,G. Das,V. Rajaji###
(1870670, 1870670)
 The HT<missing VAR> to LT phase transition is characterized by a sharpincrease in resistivity associated with prominent thermal hysteresis.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[99.0, 2, ',', 1],[166.0, 150, 'kOe', 2],[196.0, 30, 'K', 3]

H2
###Two-band conduction as a pathway to non-linear Hall effect and unsaturated negative magnetoresistance in the martensitic compound GdPd2Bi|Snehashish Chatterjee,Saurav Giri,Subham Majumdar,Prabir Dutta,Surasree Sadhukhan,Sudipta Kanungo,Souvik Chatterjee,Manju Mishra Patidar,Gunadhor Singh Okram,V. Ganesan,G. Das,V. Rajaji###
(1870815, 1870816)
 The sample shows an unusualnon-saturating H2-dependent negative magnetoresistance for magnetic fieldas high as 150 kOe.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 2, ',', 1],[20.0, 150, 'kOe', 0],[50.0, 30, 'K', 1]

In
###Two-band conduction as a pathway to non-linear Hall effect and unsaturated negative magnetoresistance in the martensitic compound GdPd2Bi|Snehashish Chatterjee,Saurav Giri,Subham Majumdar,Prabir Dutta,Surasree Sadhukhan,Sudipta Kanungo,Souvik Chatterjee,Manju Mishra Patidar,Gunadhor Singh Okram,V. Ganesan,G. Das,V. Rajaji###
(1870839, 1870839)
 In addition, non-linear field dependence of Hallresistivity is observed below about 30 K, which coincides with the sign changeof the Seebeck coefficient.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[70.0, 2, ',', 2],[3.0, 150, 'kOe', 1],[27.0, 30, 'K', 0]

H
###Two-band conduction as a pathway to non-linear Hall effect and unsaturated negative magnetoresistance in the martensitic compound GdPd2Bi|Snehashish Chatterjee,Saurav Giri,Subham Majumdar,Prabir Dutta,Surasree Sadhukhan,Sudipta Kanungo,Souvik Chatterjee,Manju Mishra Patidar,Gunadhor Singh Okram,V. Ganesan,G. Das,V. Rajaji###
(1870919, 1870919)
 The electronic structure calculations confirmrobust metallic states both in the LT and HT<missing VAR> phases.
Featurization terminated normally.
1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[150.0, 2, ',', 3],[83.0, 150, 'kOe', 2],[53.0, 30, 'K', 1]

Ni
###Orbital-selective Mott phase and spin nematicity in Ni-substituted FeTe$_{0.65}$Se$_{0.35}$ single crystals|Marta Z. Cieplak,I. Zajcewa,A. Lynnyk,K. M. Kosyl,D. J. Gawryluk###
(1871024, 1871024)
Orbital-selective Mott phase and spin nematicity in Ni-substituted FeTe0.65Se0.35 single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[222.0, 0.2, ',', 3],[505.0, 5, ',', 8]

FeTe0.65Se0.35
###Orbital-selective Mott phase and spin nematicity in Ni-substituted FeTe$_{0.65}$Se$_{0.35}$ single crystals|Marta Z. Cieplak,I. Zajcewa,A. Lynnyk,K. M. Kosyl,D. J. Gawryluk###
(1871028, 1871032)
Orbital-selective Mott phase and spin nematicity in Ni-substituted FeTe0.65Se0.35 single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.175,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.325,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[214.0, 0.2, ',', 3],[497.0, 5, ',', 8]

In
###Orbital-selective Mott phase and spin nematicity in Ni-substituted FeTe$_{0.65}$Se$_{0.35}$ single crystals|Marta Z. Cieplak,I. Zajcewa,A. Lynnyk,K. M. Kosyl,D. J. Gawryluk###
(1871104, 1871104)
 In this work, we report onthe observations of two of such features, the orbital selective Mott phase(OSM<missing VAR>P) and spin nematicity, evidenced in magnetization and magnetotransport[resistivity, Hall effect, angular magnetoresistance (AMR)] of Ni-substitutedFeTe0.65Se0.35 single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[142.0, 0.2, ',', 1],[425.0, 5, ',', 6]

OS
###Orbital-selective Mott phase and spin nematicity in Ni-substituted FeTe$_{0.65}$Se$_{0.35}$ single crystals|Marta Z. Cieplak,I. Zajcewa,A. Lynnyk,K. M. Kosyl,D. J. Gawryluk###
(1871145, 1871146)
 In this work, we report onthe observations of two of such features, the orbital selective Mott phase(OSM<missing VAR>P) and spin nematicity, evidenced in magnetization and magnetotransport[resistivity, Hall effect, angular magnetoresistance (AMR)] of Ni-substitutedFeTe0.65Se0.35 single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[100.0, 0.2, ',', 1],[383.0, 5, ',', 6]

P
###Orbital-selective Mott phase and spin nematicity in Ni-substituted FeTe$_{0.65}$Se$_{0.35}$ single crystals|Marta Z. Cieplak,I. Zajcewa,A. Lynnyk,K. M. Kosyl,D. J. Gawryluk###
(1871148, 1871148)
 In this work, we report onthe observations of two of such features, the orbital selective Mott phase(OSM<missing VAR>P) and spin nematicity, evidenced in magnetization and magnetotransport[resistivity, Hall effect, angular magnetoresistance (AMR)] of Ni-substitutedFeTe0.65Se0.35 single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[98.0, 0.2, ',', 1],[381.0, 5, ',', 6]

Ni
###Orbital-selective Mott phase and spin nematicity in Ni-substituted FeTe$_{0.65}$Se$_{0.35}$ single crystals|Marta Z. Cieplak,I. Zajcewa,A. Lynnyk,K. M. Kosyl,D. J. Gawryluk###
(1871191, 1871191)
 In this work, we report onthe observations of two of such features, the orbital selective Mott phase(OSM<missing VAR>P) and spin nematicity, evidenced in magnetization and magnetotransport[resistivity, Hall effect, angular magnetoresistance (AMR)] of Ni-substitutedFeTe0.65Se0.35 single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 0.2, ',', 1],[338.0, 5, ',', 6]

FeTe0.65Se0.35
###Orbital-selective Mott phase and spin nematicity in Ni-substituted FeTe$_{0.65}$Se$_{0.35}$ single crystals|Marta Z. Cieplak,I. Zajcewa,A. Lynnyk,K. M. Kosyl,D. J. Gawryluk###
(1871196, 1871200)
 In this work, we report onthe observations of two of such features, the orbital selective Mott phase(OSM<missing VAR>P) and spin nematicity, evidenced in magnetization and magnetotransport[resistivity, Hall effect, angular magnetoresistance (AMR)] of Ni-substitutedFeTe0.65Se0.35 single crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.175,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.325,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 0.2, ',', 1],[329.0, 5, ',', 6]

Fe1
###Orbital-selective Mott phase and spin nematicity in Ni-substituted FeTe$_{0.65}$Se$_{0.35}$ single crystals|Marta Z. Cieplak,I. Zajcewa,A. Lynnyk,K. M. Kosyl,D. J. Gawryluk###
(1871218, 1871219)
 Two series of single crystalsFe1delta-yNiyTe0.65Se0.35 were prepared, with 0 < y<missing VAR> <0.2, and delta either positive (S crystals) or negative (F crystals),depending on the crystallization rate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[27.0, 0.2, ',', 0],[310.0, 5, ',', 5]

Te0.65Se0.35
###Orbital-selective Mott phase and spin nematicity in Ni-substituted FeTe$_{0.65}$Se$_{0.35}$ single crystals|Marta Z. Cieplak,I. Zajcewa,A. Lynnyk,K. M. Kosyl,D. J. Gawryluk###
(1871225, 1871228)
 Two series of single crystalsFe1delta-yNiyTe0.65Se0.35 were prepared, with 0 < y<missing VAR> <0.2, and delta either positive (S crystals) or negative (F crystals),depending on the crystallization rate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.35,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.65,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[18.0, 0.2, ',', 0],[301.0, 5, ',', 5]

S
###Orbital-selective Mott phase and spin nematicity in Ni-substituted FeTe$_{0.65}$Se$_{0.35}$ single crystals|Marta Z. Cieplak,I. Zajcewa,A. Lynnyk,K. M. Kosyl,D. J. Gawryluk###
(1871258, 1871258)
 Two series of single crystalsFe1delta-yNiyTe0.65Se0.35 were prepared, with 0 < y<missing VAR> <0.2, and delta either positive (S crystals) or negative (F crystals),depending on the crystallization rate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[12.0, 0.2, ',', 0],[271.0, 5, ',', 5]

F
###Orbital-selective Mott phase and spin nematicity in Ni-substituted FeTe$_{0.65}$Se$_{0.35}$ single crystals|Marta Z. Cieplak,I. Zajcewa,A. Lynnyk,K. M. Kosyl,D. J. Gawryluk###
(1871268, 1871268)
 Two series of single crystalsFe1delta-yNiyTe0.65Se0.35 were prepared, with 0 < y<missing VAR> <0.2, and delta either positive (S crystals) or negative (F crystals),depending on the crystallization rate.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[22.0, 0.2, ',', 0],[261.0, 5, ',', 5]

S
###Orbital-selective Mott phase and spin nematicity in Ni-substituted FeTe$_{0.65}$Se$_{0.35}$ single crystals|Marta Z. Cieplak,I. Zajcewa,A. Lynnyk,K. M. Kosyl,D. J. Gawryluk###
(1871288, 1871288)
 The S crystals, with single, tetragonalphase exhibit superconducting (SC) properties inferior to F crystals, whichcontain Fe vacancy-rich monoclinic inclusions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[42.0, 0.2, ',', 1],[241.0, 5, ',', 4]

(SC)
###Orbital-selective Mott phase and spin nematicity in Ni-substituted FeTe$_{0.65}$Se$_{0.35}$ single crystals|Marta Z. Cieplak,I. Zajcewa,A. Lynnyk,K. M. Kosyl,D. J. Gawryluk###
(1871307, 1871310)
 The S crystals, with single, tetragonalphase exhibit superconducting (SC) properties inferior to F crystals, whichcontain Fe vacancy-rich monoclinic inclusions.
Featurization successful!
0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[61.0, 0.2, ',', 1],[219.0, 5, ',', 4]

F
###Orbital-selective Mott phase and spin nematicity in Ni-substituted FeTe$_{0.65}$Se$_{0.35}$ single crystals|Marta Z. Cieplak,I. Zajcewa,A. Lynnyk,K. M. Kosyl,D. J. Gawryluk###
(1871318, 1871318)
 The S crystals, with single, tetragonalphase exhibit superconducting (SC) properties inferior to F crystals, whichcontain Fe vacancy-rich monoclinic inclusions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[72.0, 0.2, ',', 1],[211.0, 5, ',', 4]

Fe
###Orbital-selective Mott phase and spin nematicity in Ni-substituted FeTe$_{0.65}$Se$_{0.35}$ single crystals|Marta Z. Cieplak,I. Zajcewa,A. Lynnyk,K. M. Kosyl,D. J. Gawryluk###
(1871328, 1871328)
 The S crystals, with single, tetragonalphase exhibit superconducting (SC) properties inferior to F crystals, whichcontain Fe vacancy-rich monoclinic inclusions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[82.0, 0.2, ',', 1],[201.0, 5, ',', 4]

Ni
###Orbital-selective Mott phase and spin nematicity in Ni-substituted FeTe$_{0.65}$Se$_{0.35}$ single crystals|Marta Z. Cieplak,I. Zajcewa,A. Lynnyk,K. M. Kosyl,D. J. Gawryluk###
(1871343, 1871343)
 Substitution of Ni dopes bothtypes of crystals with electrons, what eliminates some of the hole pockets fromFermi level, leaving only one, originating from d<missing VAR>xy orbital.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[97.0, 0.2, ',', 2],[186.0, 5, ',', 3]

K
###Orbital-selective Mott phase and spin nematicity in Ni-substituted FeTe$_{0.65}$Se$_{0.35}$ single crystals|Marta Z. Cieplak,I. Zajcewa,A. Lynnyk,K. M. Kosyl,D. J. Gawryluk###
(1871450, 1871450)
 We show thatelectron-dominated transport, observed at low T<missing VAR> at large y<missing VAR>, is replaced byhole-dominated transport at T<missing VAR> > 180 K, suggesting direct link with theappearance of the dz2 hole pockets at X<missing VAR> points of the Brillouin zone inthe OSM<missing VAR>P phase, as recently reported by angular resolved photoemissionexperiments (Commun.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[204.0, 0.2, ',', 3],[79.0, 5, ',', 2]

OS
###Orbital-selective Mott phase and spin nematicity in Ni-substituted FeTe$_{0.65}$Se$_{0.35}$ single crystals|Marta Z. Cieplak,I. Zajcewa,A. Lynnyk,K. M. Kosyl,D. J. Gawryluk###
(1871497, 1871498)
 We show thatelectron-dominated transport, observed at low T<missing VAR> at large y<missing VAR>, is replaced byhole-dominated transport at T<missing VAR> > 180 K, suggesting direct link with theappearance of the dz2 hole pockets at X<missing VAR> points of the Brillouin zone inthe OSM<missing VAR>P phase, as recently reported by angular resolved photoemissionexperiments (Commun.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[251.0, 0.2, ',', 3],[31.0, 5, ',', 2]

P
###Orbital-selective Mott phase and spin nematicity in Ni-substituted FeTe$_{0.65}$Se$_{0.35}$ single crystals|Marta Z. Cieplak,I. Zajcewa,A. Lynnyk,K. M. Kosyl,D. J. Gawryluk###
(1871500, 1871500)
 We show thatelectron-dominated transport, observed at low T<missing VAR> at large y<missing VAR>, is replaced byhole-dominated transport at T<missing VAR> > 180 K, suggesting direct link with theappearance of the dz2 hole pockets at X<missing VAR> points of the Brillouin zone inthe OSM<missing VAR>P phase, as recently reported by angular resolved photoemissionexperiments (Commun.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[254.0, 0.2, ',', 3],[29.0, 5, ',', 2]

S
###Orbital-selective Mott phase and spin nematicity in Ni-substituted FeTe$_{0.65}$Se$_{0.35}$ single crystals|Marta Z. Cieplak,I. Zajcewa,A. Lynnyk,K. M. Kosyl,D. J. Gawryluk###
(1871548, 1871548)
 The AMR of S crystals shows the C4rotational symmetry of in-plane magnetocrystalline anisotropy at small y<missing VAR>,replaced by C2 symmetry at intermediate y<missing VAR>, indicating development of Nidoping-induced spin nematicity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[302.0, 0.2, ',', 6],[19.0, 5, ',', 1]

C4
###Orbital-selective Mott phase and spin nematicity in Ni-substituted FeTe$_{0.65}$Se$_{0.35}$ single crystals|Marta Z. Cieplak,I. Zajcewa,A. Lynnyk,K. M. Kosyl,D. J. Gawryluk###
(1871556, 1871557)
 The AMR of S crystals shows the C4rotational symmetry of in-plane magnetocrystalline anisotropy at small y<missing VAR>,replaced by C2 symmetry at intermediate y<missing VAR>, indicating development of Nidoping-induced spin nematicity.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[310.0, 0.2, ',', 6],[27.0, 5, ',', 1]

C2
###Orbital-selective Mott phase and spin nematicity in Ni-substituted FeTe$_{0.65}$Se$_{0.35}$ single crystals|Marta Z. Cieplak,I. Zajcewa,A. Lynnyk,K. M. Kosyl,D. J. Gawryluk###
(1871586, 1871587)
 The AMR of S crystals shows the C4rotational symmetry of in-plane magnetocrystalline anisotropy at small y<missing VAR>,replaced by C2 symmetry at intermediate y<missing VAR>, indicating development of Nidoping-induced spin nematicity.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[340.0, 0.2, ',', 6],[57.0, 5, ',', 1]

Ni
###Orbital-selective Mott phase and spin nematicity in Ni-substituted FeTe$_{0.65}$Se$_{0.35}$ single crystals|Marta Z. Cieplak,I. Zajcewa,A. Lynnyk,K. M. Kosyl,D. J. Gawryluk###
(1871604, 1871604)
 The AMR of S crystals shows the C4rotational symmetry of in-plane magnetocrystalline anisotropy at small y<missing VAR>,replaced by C2 symmetry at intermediate y<missing VAR>, indicating development of Nidoping-induced spin nematicity.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[358.0, 0.2, ',', 6],[75.0, 5, ',', 1]

C4
###Orbital-selective Mott phase and spin nematicity in Ni-substituted FeTe$_{0.65}$Se$_{0.35}$ single crystals|Marta Z. Cieplak,I. Zajcewa,A. Lynnyk,K. M. Kosyl,D. J. Gawryluk###
(1871618, 1871619)
 The C4 symmetry is preserved in F crystalsdue to microstructural disorder related to vacancy-rich inclusions.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[372.0, 0.2, ',', 7],[89.0, 5, ',', 2]

F
###Orbital-selective Mott phase and spin nematicity in Ni-substituted FeTe$_{0.65}$Se$_{0.35}$ single crystals|Marta Z. Cieplak,I. Zajcewa,A. Lynnyk,K. M. Kosyl,D. J. Gawryluk###
(1871629, 1871629)
 The C4 symmetry is preserved in F crystalsdue to microstructural disorder related to vacancy-rich inclusions.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[383.0, 0.2, ',', 7],[100.0, 5, ',', 2]

Ni
###Orbital-selective Mott phase and spin nematicity in Ni-substituted FeTe$_{0.65}$Se$_{0.35}$ single crystals|Marta Z. Cieplak,I. Zajcewa,A. Lynnyk,K. M. Kosyl,D. J. Gawryluk###
(1871667, 1871667)
 Thetendency towards nematicity, induced by Ni doping, appears to be the mostimportant factor producing inferior superconducting properties of S crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[421.0, 0.2, ',', 8],[138.0, 5, ',', 3]

S
###Orbital-selective Mott phase and spin nematicity in Ni-substituted FeTe$_{0.65}$Se$_{0.35}$ single crystals|Marta Z. Cieplak,I. Zajcewa,A. Lynnyk,K. M. Kosyl,D. J. Gawryluk###
(1871697, 1871697)
 Thetendency towards nematicity, induced by Ni doping, appears to be the mostimportant factor producing inferior superconducting properties of S crystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[451.0, 0.2, ',', 8],[168.0, 5, ',', 3]

In
###Accelerating quantum materials development with advances in transmission electron microscopy|Parivash Moradifar,Yin Liu,Jiaojian Shi,Matti Lawton Siukola Thurston,Hendrik Utzat,Tim B. van Driel,Aaron M. Lindenberg,Jennifer A. Dionne###
(1871916, 1871916)
 In this review, after introduction of different classes of quantummaterials and quantum excitations, we describe how progress in the field ofelectron microscopy, including in situ and in operando EM, can accelerateadvances in quantum materials.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[154.0, 4, 'D', 1],[297.0, 3, 'D', 3]

Fe4GeTe2
###Unusual magnetotransport and anomalous Hall effect in quasi-two-dimensional van der Waals ferromagnet Fe$_4$GeTe$_2$|Riju Pal,Buddhadeb Pal,Suchanda Mondal,Prabhat Mandal,Atindra Nath Pal###
(1872358, 1872362)
Unusual magnetotransport and anomalous Hall effect in quasi-two-dimensional van der Waals ferromagnet Fe4GeTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[66.0, 120, 'K', 1],[241.0, 38, 'K', 4],[509.0, 5, 'K', 9]

Fe4GeTe2
###Unusual magnetotransport and anomalous Hall effect in quasi-two-dimensional van der Waals ferromagnet Fe$_4$GeTe$_2$|Riju Pal,Buddhadeb Pal,Suchanda Mondal,Prabhat Mandal,Atindra Nath Pal###
(1872365, 1872369)
 Fe4GeTe2, an itinerant vdW ferromagnet (FM) having Curie temperature(T<missing VAR>C) close to room temperature (sim 270 K), exhibits another transition(TSR sim 120 K) where the easy axis of magnetization changes fromin-plane to the out-of-plane direction in addition to T<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[59.0, 120, 'K', 0],[234.0, 38, 'K', 3],[502.0, 5, 'K', 8]

W
###Unusual magnetotransport and anomalous Hall effect in quasi-two-dimensional van der Waals ferromagnet Fe$_4$GeTe$_2$|Riju Pal,Buddhadeb Pal,Suchanda Mondal,Prabhat Mandal,Atindra Nath Pal###
(1872377, 1872377)
 Fe4GeTe2, an itinerant vdW ferromagnet (FM) having Curie temperature(T<missing VAR>C) close to room temperature (sim 270 K), exhibits another transition(TSR sim 120 K) where the easy axis of magnetization changes fromin-plane to the out-of-plane direction in addition to T<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[51.0, 120, 'K', 0],[226.0, 38, 'K', 3],[494.0, 5, 'K', 8]

F
###Unusual magnetotransport and anomalous Hall effect in quasi-two-dimensional van der Waals ferromagnet Fe$_4$GeTe$_2$|Riju Pal,Buddhadeb Pal,Suchanda Mondal,Prabhat Mandal,Atindra Nath Pal###
(1872382, 1872382)
 Fe4GeTe2, an itinerant vdW ferromagnet (FM) having Curie temperature(T<missing VAR>C) close to room temperature (sim 270 K), exhibits another transition(TSR sim 120 K) where the easy axis of magnetization changes fromin-plane to the out-of-plane direction in addition to T<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[46.0, 120, 'K', 0],[221.0, 38, 'K', 3],[489.0, 5, 'K', 8]

C
###Unusual magnetotransport and anomalous Hall effect in quasi-two-dimensional van der Waals ferromagnet Fe$_4$GeTe$_2$|Riju Pal,Buddhadeb Pal,Suchanda Mondal,Prabhat Mandal,Atindra Nath Pal###
(1872395, 1872395)
 Fe4GeTe2, an itinerant vdW ferromagnet (FM) having Curie temperature(T<missing VAR>C) close to room temperature (sim 270 K), exhibits another transition(TSR sim 120 K) where the easy axis of magnetization changes fromin-plane to the out-of-plane direction in addition to T<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[33.0, 120, 'K', 0],[208.0, 38, 'K', 3],[476.0, 5, 'K', 8]

K
###Unusual magnetotransport and anomalous Hall effect in quasi-two-dimensional van der Waals ferromagnet Fe$_4$GeTe$_2$|Riju Pal,Buddhadeb Pal,Suchanda Mondal,Prabhat Mandal,Atindra Nath Pal###
(1872411, 1872411)
 Fe4GeTe2, an itinerant vdW ferromagnet (FM) having Curie temperature(T<missing VAR>C) close to room temperature (sim 270 K), exhibits another transition(TSR sim 120 K) where the easy axis of magnetization changes fromin-plane to the out-of-plane direction in addition to T<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[17.0, 120, 'K', 0],[192.0, 38, 'K', 3],[460.0, 5, 'K', 8]

C
###Unusual magnetotransport and anomalous Hall effect in quasi-two-dimensional van der Waals ferromagnet Fe$_4$GeTe$_2$|Riju Pal,Buddhadeb Pal,Suchanda Mondal,Prabhat Mandal,Atindra Nath Pal###
(1872471, 1872471)
 Fe4GeTe2, an itinerant vdW ferromagnet (FM) having Curie temperature(T<missing VAR>C) close to room temperature (sim 270 K), exhibits another transition(TSR sim 120 K) where the easy axis of magnetization changes fromin-plane to the out-of-plane direction in addition to T<missing VAR>C.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[43.0, 120, 'K', 0],[132.0, 38, 'K', 3],[400.0, 5, 'K', 8]

Si/SiO2
###Unusual magnetotransport and anomalous Hall effect in quasi-two-dimensional van der Waals ferromagnet Fe$_4$GeTe$_2$|Riju Pal,Buddhadeb Pal,Suchanda Mondal,Prabhat Mandal,Atindra Nath Pal###
(1872509, 1872513)
 Here, we havestudied the magnetotransport in a multilayer Hall bar device fabricated on 300nm Si/SiO2 substrate.
EXCEPTION 4: Layered material, no automatic featurization possible!
-
[81.0, 120, 'K', 1],[90.0, 38, 'K', 2],[358.0, 5, 'K', 7]

C
###Unusual magnetotransport and anomalous Hall effect in quasi-two-dimensional van der Waals ferromagnet Fe$_4$GeTe$_2$|Riju Pal,Buddhadeb Pal,Suchanda Mondal,Prabhat Mandal,Atindra Nath Pal###
(1872545, 1872545)
 Interestingly, the zero field resistivity shows anegligible change in resistivity near T<missing VAR>C unlike the typical metallic FM<missing VAR>,whereas, it exhibits a dramatic fall below TSR.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[117.0, 120, 'K', 2],[58.0, 38, 'K', 1],[326.0, 5, 'K', 6]

F
###Unusual magnetotransport and anomalous Hall effect in quasi-two-dimensional van der Waals ferromagnet Fe$_4$GeTe$_2$|Riju Pal,Buddhadeb Pal,Suchanda Mondal,Prabhat Mandal,Atindra Nath Pal###
(1872555, 1872555)
 Interestingly, the zero field resistivity shows anegligible change in resistivity near T<missing VAR>C unlike the typical metallic FM<missing VAR>,whereas, it exhibits a dramatic fall below TSR.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[127.0, 120, 'K', 2],[48.0, 38, 'K', 1],[316.0, 5, 'K', 6]

In
###Unusual magnetotransport and anomalous Hall effect in quasi-two-dimensional van der Waals ferromagnet Fe$_4$GeTe$_2$|Riju Pal,Buddhadeb Pal,Suchanda Mondal,Prabhat Mandal,Atindra Nath Pal###
(1872692, 1872692)
 In a similar manner, the magnetoresistance (MR) data showssignificantly large negative MR near TSR and becomes positive below TQ.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[264.0, 120, 'K', 6],[89.0, 38, 'K', 3],[179.0, 5, 'K', 2]

C
###Unusual magnetotransport and anomalous Hall effect in quasi-two-dimensional van der Waals ferromagnet Fe$_4$GeTe$_2$|Riju Pal,Buddhadeb Pal,Suchanda Mondal,Prabhat Mandal,Atindra Nath Pal###
(1872847, 1872847)
 Furthermore, analysis of the Hall data reveals a significantanomalous Hall conductivity (AHC) from sim 123 Omega-1 cm-1 (at T<missing VAR>approx 5 K) to the maximum value of sim 366 Omega-1 cm-1 nearTSR.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[419.0, 120, 'K', 8],[244.0, 38, 'K', 5],[24.0, 5, 'K', 0]

K
###Unusual magnetotransport and anomalous Hall effect in quasi-two-dimensional van der Waals ferromagnet Fe$_4$GeTe$_2$|Riju Pal,Buddhadeb Pal,Suchanda Mondal,Prabhat Mandal,Atindra Nath Pal###
(1872926, 1872926)
 While the low-temperature part may originate due to the intrinsic KL<missing VAR>mechanism, our analysis indicates that the temperature-dependent AHC isprimarily appearing due to the side-jump mechanism as a result of the spin-flipelectron-magnon scattering.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[498.0, 120, 'K', 9],[323.0, 38, 'K', 6],[55.0, 5, 'K', 1]

HC
###Unusual magnetotransport and anomalous Hall effect in quasi-two-dimensional van der Waals ferromagnet Fe$_4$GeTe$_2$|Riju Pal,Buddhadeb Pal,Suchanda Mondal,Prabhat Mandal,Atindra Nath Pal###
(1872948, 1872949)
 While the low-temperature part may originate due to the intrinsic KL<missing VAR>mechanism, our analysis indicates that the temperature-dependent AHC isprimarily appearing due to the side-jump mechanism as a result of the spin-flipelectron-magnon scattering.
Featurization terminated normally.
0.5,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[520.0, 120, 'K', 9],[345.0, 38, 'K', 6],[77.0, 5, 'K', 1]

Fe4GeTe2
###Unusual magnetotransport and anomalous Hall effect in quasi-two-dimensional van der Waals ferromagnet Fe$_4$GeTe$_2$|Riju Pal,Buddhadeb Pal,Suchanda Mondal,Prabhat Mandal,Atindra Nath Pal###
(1873028, 1873032)
 Our study demonstrates an interplay betweenmagnetism and band topology and its consequence on electron transport inFe4GeTe2.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.5714285714285714,0,0,0,0,0,0.14285714285714285,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2857142857142857,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[600.0, 120, 'K', 10],[425.0, 38, 'K', 7],[157.0, 5, 'K', 2]

LaWN3
###Structural and Optoelectronic Properties of Thin Film LaWN$_3$|Rebecca W. Smaha,John S. Mangum,Ian A. Leahy,Julian Calder,Matthew P. Hautzinger,Christopher P. Muzzillo,Craig L. Perkins,Kevin R. Talley,Serena Eley,Prashun Gorai,Sage R. Bauers,Andriy Zakutayev###
(1873057, 1873060)
Structural and Optoelectronic Properties of Thin Film LaWN3.
Featurization terminated normally.
0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[533.0, 28, '%', 9]

LaWN3
###Structural and Optoelectronic Properties of Thin Film LaWN$_3$|Rebecca W. Smaha,John S. Mangum,Ian A. Leahy,Julian Calder,Matthew P. Hautzinger,Christopher P. Muzzillo,Craig L. Perkins,Kevin R. Talley,Serena Eley,Prashun Gorai,Sage R. Bauers,Andriy Zakutayev###
(1873140, 1873143)
 LaWN3, recently reported as the first oxygen-free nitride perovskite,exhibited polar symmetry and a large piezoelectric coefficient.
Featurization terminated normally.
0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[450.0, 28, '%', 7]

LaWN3
###Structural and Optoelectronic Properties of Thin Film LaWN$_3$|Rebecca W. Smaha,John S. Mangum,Ian A. Leahy,Julian Calder,Matthew P. Hautzinger,Christopher P. Muzzillo,Craig L. Perkins,Kevin R. Talley,Serena Eley,Prashun Gorai,Sage R. Bauers,Andriy Zakutayev###
(1873257, 1873260)
 Here, we study the structure and optoelectronic properties of thinfilm LaWN3 in greater detail, employing combinatorial techniques to correlatethese properties with cation stoichiometry.
Featurization terminated normally.
0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[333.0, 28, '%', 5]

F
###Structural and Optoelectronic Properties of Thin Film LaWN$_3$|Rebecca W. Smaha,John S. Mangum,Ian A. Leahy,Julian Calder,Matthew P. Hautzinger,Christopher P. Muzzillo,Craig L. Perkins,Kevin R. Talley,Serena Eley,Prashun Gorai,Sage R. Bauers,Andriy Zakutayev###
(1873315, 1873315)
 We report a two-step synthesis thatutilizes a more common R<missing VAR>F substrate bias instead of a nitrogen plasma source,yielding nanocrystalline films that are crystallized by ex-situ annealing.
Featurization terminated normally.
0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[278.0, 28, '%', 4]

La
###Structural and Optoelectronic Properties of Thin Film LaWN$_3$|Rebecca W. Smaha,John S. Mangum,Ian A. Leahy,Julian Calder,Matthew P. Hautzinger,Christopher P. Muzzillo,Craig L. Perkins,Kevin R. Talley,Serena Eley,Prashun Gorai,Sage R. Bauers,Andriy Zakutayev###
(1873381, 1873381)
 Weinvestigate the structure and composition of these films, findingpolycrystalline La-rich and highly textured W-rich films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[212.0, 28, '%', 3]

W
###Structural and Optoelectronic Properties of Thin Film LaWN$_3$|Rebecca W. Smaha,John S. Mangum,Ian A. Leahy,Julian Calder,Matthew P. Hautzinger,Christopher P. Muzzillo,Craig L. Perkins,Kevin R. Talley,Serena Eley,Prashun Gorai,Sage R. Bauers,Andriy Zakutayev###
(1873391, 1873391)
 Weinvestigate the structure and composition of these films, findingpolycrystalline La-rich and highly textured W-rich films.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[202.0, 28, '%', 3]

W
###Structural and Optoelectronic Properties of Thin Film LaWN$_3$|Rebecca W. Smaha,John S. Mangum,Ian A. Leahy,Julian Calder,Matthew P. Hautzinger,Christopher P. Muzzillo,Craig L. Perkins,Kevin R. Talley,Serena Eley,Prashun Gorai,Sage R. Bauers,Andriy Zakutayev###
(1873465, 1873465)
 The opticalabsorption onset and temperature- and magnetic field-dependent resistivity areconsistent with semiconducting behavior and are highly sensitive to cationstoichiometry, which may be related to amorphous impurities metallic W or WNxin W-rich samples and insulating La2O3 in La-rich samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[128.0, 28, '%', 2]

W
###Structural and Optoelectronic Properties of Thin Film LaWN$_3$|Rebecca W. Smaha,John S. Mangum,Ian A. Leahy,Julian Calder,Matthew P. Hautzinger,Christopher P. Muzzillo,Craig L. Perkins,Kevin R. Talley,Serena Eley,Prashun Gorai,Sage R. Bauers,Andriy Zakutayev###
(1873469, 1873469)
 The opticalabsorption onset and temperature- and magnetic field-dependent resistivity areconsistent with semiconducting behavior and are highly sensitive to cationstoichiometry, which may be related to amorphous impurities metallic W or WNxin W-rich samples and insulating La2O3 in La-rich samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[124.0, 28, '%', 2]

W
###Structural and Optoelectronic Properties of Thin Film LaWN$_3$|Rebecca W. Smaha,John S. Mangum,Ian A. Leahy,Julian Calder,Matthew P. Hautzinger,Christopher P. Muzzillo,Craig L. Perkins,Kevin R. Talley,Serena Eley,Prashun Gorai,Sage R. Bauers,Andriy Zakutayev###
(1873475, 1873475)
 The opticalabsorption onset and temperature- and magnetic field-dependent resistivity areconsistent with semiconducting behavior and are highly sensitive to cationstoichiometry, which may be related to amorphous impurities metallic W or WNxin W-rich samples and insulating La2O3 in La-rich samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[118.0, 28, '%', 2]

La2O3
###Structural and Optoelectronic Properties of Thin Film LaWN$_3$|Rebecca W. Smaha,John S. Mangum,Ian A. Leahy,Julian Calder,Matthew P. Hautzinger,Christopher P. Muzzillo,Craig L. Perkins,Kevin R. Talley,Serena Eley,Prashun Gorai,Sage R. Bauers,Andriy Zakutayev###
(1873485, 1873488)
 The opticalabsorption onset and temperature- and magnetic field-dependent resistivity areconsistent with semiconducting behavior and are highly sensitive to cationstoichiometry, which may be related to amorphous impurities metallic W or WNxin W-rich samples and insulating La2O3 in La-rich samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.4,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[105.0, 28, '%', 2]

La
###Structural and Optoelectronic Properties of Thin Film LaWN$_3$|Rebecca W. Smaha,John S. Mangum,Ian A. Leahy,Julian Calder,Matthew P. Hautzinger,Christopher P. Muzzillo,Craig L. Perkins,Kevin R. Talley,Serena Eley,Prashun Gorai,Sage R. Bauers,Andriy Zakutayev###
(1873492, 1873492)
 The opticalabsorption onset and temperature- and magnetic field-dependent resistivity areconsistent with semiconducting behavior and are highly sensitive to cationstoichiometry, which may be related to amorphous impurities metallic W or WNxin W-rich samples and insulating La2O3 in La-rich samples.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[101.0, 28, '%', 2]

W
###Structural and Optoelectronic Properties of Thin Film LaWN$_3$|Rebecca W. Smaha,John S. Mangum,Ian A. Leahy,Julian Calder,Matthew P. Hautzinger,Christopher P. Muzzillo,Craig L. Perkins,Kevin R. Talley,Serena Eley,Prashun Gorai,Sage R. Bauers,Andriy Zakutayev###
(1873529, 1873529)
 The fractionalmagnetoresistance is linear and small, consistent with defect scattering, and aW-rich sample has n<missing VAR>-type carriers with high densities and low mobilities.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[64.0, 28, '%', 1]

LaWN3
###Structural and Optoelectronic Properties of Thin Film LaWN$_3$|Rebecca W. Smaha,John S. Mangum,Ian A. Leahy,Julian Calder,Matthew P. Hautzinger,Christopher P. Muzzillo,Craig L. Perkins,Kevin R. Talley,Serena Eley,Prashun Gorai,Sage R. Bauers,Andriy Zakutayev###
(1873567, 1873570)
 Wedemonstrate a photoresponse in LaWN3 the resistivity of a La-rich sample isenhanced by 28% at low temperature, likely due to a defect trapping mechanism.
Featurization terminated normally.
0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[23.0, 28, '%', 0]

La
###Structural and Optoelectronic Properties of Thin Film LaWN$_3$|Rebecca W. Smaha,John S. Mangum,Ian A. Leahy,Julian Calder,Matthew P. Hautzinger,Christopher P. Muzzillo,Craig L. Perkins,Kevin R. Talley,Serena Eley,Prashun Gorai,Sage R. Bauers,Andriy Zakutayev###
(1873580, 1873580)
 Wedemonstrate a photoresponse in LaWN3 the resistivity of a La-rich sample isenhanced by 28% at low temperature, likely due to a defect trapping mechanism.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[13.0, 28, '%', 0]

LaWN3
###Structural and Optoelectronic Properties of Thin Film LaWN$_3$|Rebecca W. Smaha,John S. Mangum,Ian A. Leahy,Julian Calder,Matthew P. Hautzinger,Christopher P. Muzzillo,Craig L. Perkins,Kevin R. Talley,Serena Eley,Prashun Gorai,Sage R. Bauers,Andriy Zakutayev###
(1873627, 1873630)
The physical properties of LaWN3 are highly sensitive to cation stoichiometry,like many oxide perovskites, which therefore calls for precise compositioncontrol to utilize the interesting properties observed in this nitrideperovskite.
Featurization terminated normally.
0,0,0,0,0,0,0.6,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.2,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[34.0, 28, '%', 1]

Mn3Sn
###Order parameter dynamics in Mn$_3$Sn driven by DC and pulsed spin-orbit torques|Ankit Shukla,Siyuan Qian,Shaloo Rakheja###
(1873708, 1873710)
Order parameter dynamics in Mn3Sn driven by D<missing VAR>C and pulsed spin-orbit torques.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Order parameter dynamics in Mn$_3$Sn driven by DC and pulsed spin-orbit torques|Ankit Shukla,Siyuan Qian,Shaloo Rakheja###
(1873717, 1873717)
Order parameter dynamics in Mn3Sn driven by D<missing VAR>C and pulsed spin-orbit torques.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Order parameter dynamics in Mn$_3$Sn driven by DC and pulsed spin-orbit torques|Ankit Shukla,Siyuan Qian,Shaloo Rakheja###
(1873751, 1873751)
 We numerically investigate and develop analytic models for both the D<missing VAR>C andpulsed spin-orbit-torque (SOT)-driven response of order parameter insingle-domain Mn3Sn, which is a metallic antiferromagnet with an anti-chiral120circ spin structure.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Order parameter dynamics in Mn$_3$Sn driven by DC and pulsed spin-orbit torques|Ankit Shukla,Siyuan Qian,Shaloo Rakheja###
(1873765, 1873766)
 We numerically investigate and develop analytic models for both the D<missing VAR>C andpulsed spin-orbit-torque (SOT)-driven response of order parameter insingle-domain Mn3Sn, which is a metallic antiferromagnet with an anti-chiral120circ spin structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn3Sn
###Order parameter dynamics in Mn$_3$Sn driven by DC and pulsed spin-orbit torques|Ankit Shukla,Siyuan Qian,Shaloo Rakheja###
(1873787, 1873789)
 We numerically investigate and develop analytic models for both the D<missing VAR>C andpulsed spin-orbit-torque (SOT)-driven response of order parameter insingle-domain Mn3Sn, which is a metallic antiferromagnet with an anti-chiral120circ spin structure.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Order parameter dynamics in Mn$_3$Sn driven by DC and pulsed spin-orbit torques|Ankit Shukla,Siyuan Qian,Shaloo Rakheja###
(1873826, 1873826)
 We show that D<missing VAR>C currents above a critical thresholdcan excite oscillatory dynamics of the order parameter in the gigahertz toterahertz frequency spectrum.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

In
###Order parameter dynamics in Mn$_3$Sn driven by DC and pulsed spin-orbit torques|Ankit Shukla,Siyuan Qian,Shaloo Rakheja###
(1873924, 1873924)
 In the case of pulsed excitation,the magnetization can be switched from one stable state to any of the otherfive stable states in the Kagome plane by tuning the duration or the amplitudeof the current pulse.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn3Sn
###Order parameter dynamics in Mn$_3$Sn driven by DC and pulsed spin-orbit torques|Ankit Shukla,Siyuan Qian,Shaloo Rakheja###
(1874052, 1874054)
 Precise functional forms of the final switched stateversus the input current are derived, offering crucial insights into theswitching dynamics of Mn3Sn.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn3Sn
###Order parameter dynamics in Mn$_3$Sn driven by DC and pulsed spin-orbit torques|Ankit Shukla,Siyuan Qian,Shaloo Rakheja###
(1874110, 1874112)
 The readout of the magnetic state can becarried out via either the anomalous Hall effect, or the recently demonstratedtunneling magnetoresistance in an all-Mn3Sn junction.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

C
###Order parameter dynamics in Mn$_3$Sn driven by DC and pulsed spin-orbit torques|Ankit Shukla,Siyuan Qian,Shaloo Rakheja###
(1874186, 1874186)
 Operating the device in pulsed mode orusing low D<missing VAR>C currents reduces the peak temperature rise in the sample due toJoule heating.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

SO
###Order parameter dynamics in Mn$_3$Sn driven by DC and pulsed spin-orbit torques|Ankit Shukla,Siyuan Qian,Shaloo Rakheja###
(1874255, 1874256)
 Our predictive modeling and simulation results can be used byboth theorists and experimentalists to explore the interplay of SOT<missing VAR> and theorder dynamics in Mn3Sn, and to further benchmark the device performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0.5,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Mn3Sn
###Order parameter dynamics in Mn$_3$Sn driven by DC and pulsed spin-orbit torques|Ankit Shukla,Siyuan Qian,Shaloo Rakheja###
(1874270, 1874272)
 Our predictive modeling and simulation results can be used byboth theorists and experimentalists to explore the interplay of SOT<missing VAR> and theorder dynamics in Mn3Sn, and to further benchmark the device performance.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
Abstract does not contain any numbers.

Eu
###Epitaxial thin films of binary Eu-compounds close to a valence transition|Sebastian Kölsch,Alfons Georg Schuck,Michael Huth###
(1874308, 1874308)
Epitaxial thin films of binary Eu-compounds close to a valence transition.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[55.0, 4, 'f', 1],[574.0, 1.4, 'T', 11]

EuPd2
###Epitaxial thin films of binary Eu-compounds close to a valence transition|Sebastian Kölsch,Alfons Georg Schuck,Michael Huth###
(1874432, 1874434)
 Consequently, we grew epitaxial EuPd2(magnetic Eu2) and EuPd3 (nonmagnetic Eu3) thin films onMgO(001) substrates using molecular beam epitaxy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[69.0, 4, 'f', 2],[448.0, 1.4, 'T', 8]

Eu2
###Epitaxial thin films of binary Eu-compounds close to a valence transition|Sebastian Kölsch,Alfons Georg Schuck,Michael Huth###
(1874440, 1874441)
 Consequently, we grew epitaxial EuPd2(magnetic Eu2) and EuPd3 (nonmagnetic Eu3) thin films onMgO(001) substrates using molecular beam epitaxy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[77.0, 4, 'f', 2],[441.0, 1.4, 'T', 8]

EuPd3
###Epitaxial thin films of binary Eu-compounds close to a valence transition|Sebastian Kölsch,Alfons Georg Schuck,Michael Huth###
(1874446, 1874448)
 Consequently, we grew epitaxial EuPd2(magnetic Eu2) and EuPd3 (nonmagnetic Eu3) thin films onMgO(001) substrates using molecular beam epitaxy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[83.0, 4, 'f', 2],[434.0, 1.4, 'T', 8]

Eu3
###Epitaxial thin films of binary Eu-compounds close to a valence transition|Sebastian Kölsch,Alfons Georg Schuck,Michael Huth###
(1874453, 1874454)
 Consequently, we grew epitaxial EuPd2(magnetic Eu2) and EuPd3 (nonmagnetic Eu3) thin films onMgO(001) substrates using molecular beam epitaxy.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[90.0, 4, 'f', 2],[428.0, 1.4, 'T', 8]

(C15)
###Epitaxial thin films of binary Eu-compounds close to a valence transition|Sebastian Kölsch,Alfons Georg Schuck,Michael Huth###
(1874506, 1874509)
 Ambient X<missing VAR>-ray diffractionconfirms an epitaxial relationship of cubic Laves-type (C15) EuPd2 with an(111)-out-of plane orientation, whereby four distinct in-plane crystallographicdomains develop.
Featurization successful!
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[143.0, 4, 'f', 3],[373.0, 1.4, 'T', 7]

EuPd2
###Epitaxial thin films of binary Eu-compounds close to a valence transition|Sebastian Kölsch,Alfons Georg Schuck,Michael Huth###
(1874511, 1874513)
 Ambient X<missing VAR>-ray diffractionconfirms an epitaxial relationship of cubic Laves-type (C15) EuPd2 with an(111)-out-of plane orientation, whereby four distinct in-plane crystallographicdomains develop.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[148.0, 4, 'f', 3],[369.0, 1.4, 'T', 7]

EuPd3
###Epitaxial thin films of binary Eu-compounds close to a valence transition|Sebastian Kölsch,Alfons Georg Schuck,Michael Huth###
(1874557, 1874559)
 For simple cubic EuPd3 two different out-of-planeorientations can be obtained by changing the substrate annealing temperatureunder ultra-high vacuum conditions from 600deg C to 1000deg C for onehour.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[194.0, 4, 'f', 4],[323.0, 1.4, 'T', 6]

C
###Epitaxial thin films of binary Eu-compounds close to a valence transition|Sebastian Kölsch,Alfons Georg Schuck,Michael Huth###
(1874608, 1874608)
 For simple cubic EuPd3 two different out-of-planeorientations can be obtained by changing the substrate annealing temperatureunder ultra-high vacuum conditions from 600deg C to 1000deg C for onehour.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[245.0, 4, 'f', 4],[274.0, 1.4, 'T', 6]

C
###Epitaxial thin films of binary Eu-compounds close to a valence transition|Sebastian Kölsch,Alfons Georg Schuck,Michael Huth###
(1874615, 1874615)
 For simple cubic EuPd3 two different out-of-planeorientations can be obtained by changing the substrate annealing temperatureunder ultra-high vacuum conditions from 600deg C to 1000deg C for onehour.
Featurization terminated normally.
0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[252.0, 4, 'f', 4],[267.0, 1.4, 'T', 6]

EuPd3
###Epitaxial thin films of binary Eu-compounds close to a valence transition|Sebastian Kölsch,Alfons Georg Schuck,Michael Huth###
(1874637, 1874639)
 A small resistance minimum evolves for EuPd3 thin films grown with lowtemperature substrate annealing, which was previously found even in singlecrystals of EuPd3 and might be attributed to a Kondo or weak localizationeffect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[274.0, 4, 'f', 5],[243.0, 1.4, 'T', 5]

EuPd3
###Epitaxial thin films of binary Eu-compounds close to a valence transition|Sebastian Kölsch,Alfons Georg Schuck,Michael Huth###
(1874678, 1874680)
 A small resistance minimum evolves for EuPd3 thin films grown with lowtemperature substrate annealing, which was previously found even in singlecrystals of EuPd3 and might be attributed to a Kondo or weak localizationeffect.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[315.0, 4, 'f', 5],[202.0, 1.4, 'T', 5]

EuPd3
###Epitaxial thin films of binary Eu-compounds close to a valence transition|Sebastian Kölsch,Alfons Georg Schuck,Michael Huth###
(1874743, 1874745)
 Absence of influence of an applied magnetic fields and magnetotransportmeasurements suggest always a nonmagnetic ground state for EuPd3 thin films,i<missing VAR>.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[380.0, 4, 'f', 6],[137.0, 1.4, 'T', 4]

Eu
###Epitaxial thin films of binary Eu-compounds close to a valence transition|Sebastian Kölsch,Alfons Georg Schuck,Michael Huth###
(1874766, 1874766)
, a purely trivalent Eu valence, as previously found in EuPd3 singlecrystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[403.0, 4, 'f', 8],[116.0, 1.4, 'T', 2]

EuPd3
###Epitaxial thin films of binary Eu-compounds close to a valence transition|Sebastian Kölsch,Alfons Georg Schuck,Michael Huth###
(1874779, 1874781)
, a purely trivalent Eu valence, as previously found in EuPd3 singlecrystals.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.75,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.25,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[416.0, 4, 'f', 8],[101.0, 1.4, 'T', 2]

EuPd2
###Epitaxial thin films of binary Eu-compounds close to a valence transition|Sebastian Kölsch,Alfons Georg Schuck,Michael Huth###
(1874791, 1874793)
 For EuPd2 magnetic ordering below 72 K is observed, quite similarto single crystal behaviour.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.6666666666666666,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0.3333333333333333,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[428.0, 4, 'f', 9],[89.0, 1.4, 'T', 1]

K
###Epitaxial thin films of binary Eu-compounds close to a valence transition|Sebastian Kölsch,Alfons Georg Schuck,Michael Huth###
(1874803, 1874803)
 For EuPd2 magnetic ordering below 72 K is observed, quite similarto single crystal behaviour.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[440.0, 4, 'f', 9],[79.0, 1.4, 'T', 1]

K
###Epitaxial thin films of binary Eu-compounds close to a valence transition|Sebastian Kölsch,Alfons Georg Schuck,Michael Huth###
(1874874, 1874874)
 Additional field dependent measurements of themagnetoresistance and the Hall effect show hysteresis effects below 0.4 T<missing VAR> andan anomalous Hall effect below 70 K, which saturates around 1.4 T, thusproving a ferromagnetic ground state of the divalent Eu.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[511.0, 4, 'f', 10],[8.0, 1.4, 'T', 0]

Eu
###Epitaxial thin films of binary Eu-compounds close to a valence transition|Sebastian Kölsch,Alfons Georg Schuck,Michael Huth###
(1874904, 1874904)
 Additional field dependent measurements of themagnetoresistance and the Hall effect show hysteresis effects below 0.4 T<missing VAR> andan anomalous Hall effect below 70 K, which saturates around 1.4 T, thusproving a ferromagnetic ground state of the divalent Eu.
Featurization terminated normally.
0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,1.0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0,0
[541.0, 4, 'f', 10],[22.0, 1.4, 'T', 0]

